WorldWideScience

Sample records for p-type doping characteristics

  1. Luminance behavior of lithium-doped ZnO nanowires with p-type conduction characteristics.

    Science.gov (United States)

    Ko, Won Bae; Lee, Jun Seok; Lee, Sang Hyo; Cha, Seung Nam; Sohn, Jung Inn; Kim, Jong Min; Park, Young Jun; Kim, Hyun Jung; Hong, Jin Pyo

    2013-09-01

    The present study describes the room-temperature cathodeluminescence (CL) and temperature-dependent photoluminescence (PL) properties of p-type lithium (Li)-doped zinc oxide (ZnO) nanowires (NWs) grown by hydrothermal doping and post-annealing processes. A ZnO thin film was used as a seed layer in NW growth. The emission wavelengths and intensities of undoped ZnO NWs and p-type Li-doped ZnO NWs were analyzed for comparison. CL and PL observations of post-annealed p-type Li-doped ZnO NWs clearly exhibited a dominant sharp band-edge emission. Finally, a n-type ZnO thin film/p-type annealed Li-doped ZnO NW homojunction diode was prepared to confirm the p-type conduction of annealed Li-doped ZnO NWs as well as the structural properties measured by transmission electron microscopy.

  2. Application of neutron transmutation doping method to initially p-type silicon material.

    Science.gov (United States)

    Kim, Myong-Seop; Kang, Ki-Doo; Park, Sang-Jun

    2009-01-01

    The neutron transmutation doping (NTD) method was applied to the initially p-type silicon in order to extend the NTD applications at HANARO. The relationship between the irradiation neutron fluence and the final resistivity of the initially p-type silicon material was investigated. The proportional constant between the neutron fluence and the resistivity was determined to be 2.3473x10(19)nOmegacm(-1). The deviation of the final resistivity from the target for almost all the irradiation results of the initially p-type silicon ingots was at a range from -5% to 2%. In addition, the burn-up effect of the boron impurities, the residual (32)P activity and the effect of the compensation characteristics for the initially p-type silicon were studied. Conclusively, the practical methodology to perform the neutron transmutation doping of the initially p-type silicon ingot was established.

  3. Development in p-type Doping of ZnO

    Institute of Scientific and Technical Information of China (English)

    YU Liping; ZHU Qiqiang; FAN Dayong; LAN Zili

    2012-01-01

    Zinc oxide (ZnO) is a wide band-gap material of the Ⅱ-Ⅵ group with excellent optical properties for optoelectronics applications,such as the flat panel displays and solar cells used in sports tournament.Despite its advantages,the application of ZnO is hampered by the lack of stable p-type doping.In this paper,the recent progress in this field was briefly reviewed,and a comprehensive summary of the research was carried out on ZnO fabrication methods and its electrical,optical,and magnetic properties were presented.

  4. Bi-Se doped with Cu, p-type semiconductor

    Science.gov (United States)

    Bhattacharya, Raghu Nath; Phok, Sovannary; Parilla, Philip Anthony

    2013-08-20

    A Bi--Se doped with Cu, p-type semiconductor, preferably used as an absorber material in a photovoltaic device. Preferably the semiconductor has at least 20 molar percent Cu. In a preferred embodiment, the semiconductor comprises at least 28 molar percent of Cu. In one embodiment, the semiconductor comprises a molar percentage of Cu and Bi whereby the molar percentage of Cu divided by the molar percentage of Bi is greater than 1.2. In a preferred embodiment, the semiconductor is manufactured as a thin film having a thickness less than 600 nm.

  5. Theoretical prediction of p-type transparent conductivity in Zn-doped TiO2.

    Science.gov (United States)

    Han, Xiaoping; Shao, Guosheng

    2013-06-28

    It is very difficult and yet extremely important to fill the wide technological gap in developing transparent conducting oxides (TCOs) that exhibit excellent p-type conducting characteristics. Here, on the basis of extensive first-principles calculations, we discover for the first time potentially promising p-type transparent conductivity in Zn-doped TiO2 under oxygen rich conditions. Efforts have been made to elaborate the effects of possible defects and their interaction with Zn doping on the p-type transparent conductivity. This work offers a fundamental road map for cost-effective development of p-type TCOs based on TiO2, which is a cheap and stable material system of large natural resources.

  6. Effective p-type N-doped WS{sub 2} monolayer

    Energy Technology Data Exchange (ETDEWEB)

    Zhao, Xu, E-mail: zhaoxu@htu.cn; Xia, Congxin; Wang, Tianxing; Peng, Yuting; Dai, Xianqi

    2015-11-15

    Based on density functional theory, the characteristics of n- and p-type dopants are investigated by means of group V and VII atoms substituting sulfur in the WS{sub 2} monolayer. Numerical results show that for each doping case, the formation energy is lower under W-rich condition, which indicates that it is energy favorable to incorporate group V and VII atoms into WS{sub 2} under W-rich experimental conditions. Moreover, compared with other dopant cases, N-doped WS{sub 2} monolayer owns the lowest formation energy. In particular, the transition level of (−1/0) is only 75 meV in the N-doped case, which indicates that N impurities can offer effective p-type carriers in the WS{sub 2} monolayer. - Highlights: • The formation energy is lower under W-rich conditions. • N-doped system owns the lowest formation energy compared with other atoms. • The transition level of N-doping in WS{sub 2} is 75 meV. • N impurities can offer effective p-type carriers in the WS{sub 2}.

  7. Ultraviolet light-emitting diodes with polarization-doped p-type layer

    Science.gov (United States)

    Hu, Wenxiao; Qin, Ping; Song, Weidong; Zhang, Chongzhen; Wang, Rupeng; Zhao, Liangliang; Xia, Chao; Yuan, Songyang; Yin, Yian; Li, Shuti

    2016-09-01

    We report ultraviolet light emitting diode (LEDs) with polarization doped p-type layer. Fabricated LEDs with polarization doped p-type layer exhibited reduced forward voltage and enhanced light output power, compared to those with traditional p-type AlGaN layer. The improvement is attributed to improved hole concentration and the smooth valence band by the polarization enhanced p-type doping. Our simulated results reveal that this p-type layer can further enhance the performance of ultraviolet LEDs by removing the electron blocking layer (EBL).

  8. Study of p-type AlN-doped SnO2 thin films and its transparent devices

    Science.gov (United States)

    Wu, Y. J.; Liu, Y. S.; Hsieh, C. Y.; Lee, P. M.; Wei, Y. S.; Liao, C. H.; Liu, C. Y.

    2015-02-01

    The electrical properties of transparent Al-doped tin oxide (SnO2), N-doped SnO2, and AlN-doped SnO2 thin films were studied. The Al-doped tin oxide (SnO2) thin films all show n-type conduction regardless the annealing condition. The n-type conduction of the as-deposited N-doped SnO2, and AlN-doped SnO2 thin films could be converted to p-type conduction by annealing the films at an elevated temperature of 450 °C. XPS analysis verified that the substitution of N ions in the O ion sites in the annealed N-doped SnO2 and AlN-doped SnO2 thin films were responsible for the n-p conduction transition. The conduction of the annealed N-doped SnO2 and AlN-doped SnO2 thin films could be converted back to n-type conduction by thermally annealing the films at higher temperature, over 450 °C. The p-n conduction transition is related with the outgassing of N ions in the p-type N-doped SnO2 and AlN-doped SnO2 thin films. Remarkably, we found that the Al content can retard the outgassing of N ions in the p-type N-doped SnO2 and AlN-doped SnO2 thin films and prolong the p-n conduction transition temperature above 600 °C. XPS analysis revealed that the formation of the Snsbnd Nsbnd Al bond improved the stability of the N ions in the AlN-doped SnO2 thin films. I-V curve of the p-type AlN-doped SnO2/n-type fluorine-doped SnO2 junction exhibited clear p-n junction characteristics, a low leakage current under the revised bias (1.13 × 10-5 A at -5 V), and a low turn-on voltage (3.24 V). p-Type AlN-doped SnO2/n-type fluorine-doped SnO2 junction exhibited excellent transmittance (over 90%) in the visible region (470-750 nm).

  9. A simple model to estimate the optimal doping of p - Type oxide superconductors

    Directory of Open Access Journals (Sweden)

    Adir Moysés Luiz

    2008-12-01

    Full Text Available Oxygen doping of superconductors is discussed. Doping high-Tc superconductors with oxygen seems to be more efficient than other doping procedures. Using the assumption of double valence fluctuations, we present a simple model to estimate the optimal doping of p-type oxide superconductors. The experimental values of oxygen content for optimal doping of the most important p-type oxide superconductors can be accounted for adequately using this simple model. We expect that our simple model will encourage further experimental and theoretical researches in superconducting materials.

  10. Understanding the effect of $n$-type and $p$-type doping in the channel of graphene nanoribbon transistor

    Indian Academy of Sciences (India)

    SUDHANSHU CHOUDHARY; VIKRAM SINGH

    2016-09-01

    In this paper, device performance of graphene nanoribbon field effect transistor (GNRFET) with different doping concentrations in different parts of the channel is reported. The study is performed by using atomistic simulations based on self-consistent solution of Schrodinger’s and Poisson’s equation within the non-equilibrium Green’s function formalism. The transfer and output characteristics suggest that device performance with $n$-type doping in the channel is better with smaller supply voltage compared to higher supply voltage. On increasing the $n$-type doping concentration, we obtained better on-current and output characteristics in comparison with undoped and $p$-type doped channel GNRFET. Further, we introduced step-doping profile in the graphene nanoribbon (GNR) channel and found that the device gives better on-current and good saturation condition when compared to undoped or uniformly-doped channel.

  11. Realization of Cu-Doped p-Type ZnO Thin Films by Molecular Beam Epitaxy.

    Science.gov (United States)

    Suja, Mohammad; Bashar, Sunayna B; Morshed, Muhammad M; Liu, Jianlin

    2015-04-29

    Cu-doped p-type ZnO films are grown on c-sapphire substrates by plasma-assisted molecular beam epitaxy. Photoluminescence (PL) experiments reveal a shallow acceptor state at 0.15 eV above the valence band edge. Hall effect results indicate that a growth condition window is found for the formation of p-type ZnO thin films, and the best conductivity is achieved with a high hole concentration of 1.54 × 10(18) cm(-3), a low resistivity of 0.6 Ω cm, and a moderate mobility of 6.65 cm(2) V(-1) s(-1) at room temperature. Metal oxide semiconductor capacitor devices have been fabricated on the Cu-doped ZnO films, and the characteristics of capacitance-voltage measurements demonstrate that the Cu-doped ZnO thin films under proper growth conditions are p-type. Seebeck measurements on these Cu-doped ZnO samples lead to positive Seebeck coefficients and further confirm the p-type conductivity. Other measurements such as X-ray diffraction, X-ray photoelectron, Raman, and absorption spectroscopies are also performed to elucidate the structural and optical characteristics of the Cu-doped p-type ZnO films. The p-type conductivity is explained to originate from Cu substitution of Zn with a valency of +1 state. However, all p-type samples are converted to n-type over time, which is mostly due to the carrier compensation from extrinsic defects of ZnO.

  12. p-Type hydrogen sensing with Al- and V-doped TiO2 nanostructures

    Science.gov (United States)

    Li, Zhaohui; Ding, Dongyan; Ning, Congqin

    2013-01-01

    Doping with other elements is one of the efficient ways to modify the physical and chemical properties of TiO2 nanomaterials. In the present work, anatase TiO2 nanofilms doped with Al and V elements were fabricated through anodic oxidation of Ti6Al4V alloy and further annealing treatment. Hydrogen sensing behavior of the crystallized Ti-Al-V-O nanofilms at various working temperatures was investigated through exposure to 1,000 ppm H2. Different from n-type hydrogen sensing characteristics of undoped TiO2 nanotubes, the Al- and V-doped nanofilms presented a p-type hydrogen sensing behavior by showing increased resistance upon exposure to the hydrogen-containing atmosphere. The Ti-Al-V-O nanofilm annealed at 450°C was mainly composed of anatase phase, which was sensitive to hydrogen-containing atmosphere only at elevated temperatures. Annealing of the Ti-Al-V-O nanofilm at 550°C could increase the content of anatase phase in the oxide nanofilm and thus resulted in a good sensitivity and resistance recovery at both room temperature and elevated temperatures. The TiO2 nanofilms doped with Al and V elements shows great potential for use as a robust semiconducting hydrogen sensor.

  13. Fabrication of p-type lithium niobate crystals by molybdenum doping and polarization

    Science.gov (United States)

    Tian, Tian; Kong, Yongfa; Liu, Hongde; Liu, Shiguo; Li, Wei; Chen, Shaolin; Xu, Jiayue

    2017-06-01

    The lack of p-type lithium niobate limits it serving as an active material. A series of Mo-doped and pure congruent lithium niobate crystals were grown by Czochralski method under different polarization conditions. Their dominant carrier species were characterized by holographic experiment. The results showed dominant charge carrier species may be changed from electrons to holes when lithium niobate crystal was doped with Mo ions and polarized under the current of 70mA for 30 minutes. It indicated that p-type lithium niobate crystal could be fabricated by Mo-doping and suitably controlling the polarization condition. Mo-doped lithium niobate crystals can be a promising candidate for active components.

  14. Fabrication of p-type conductivity in SnO{sub 2} thin films through Ga doping

    Energy Technology Data Exchange (ETDEWEB)

    Tsay, Chien-Yie, E-mail: cytsay@fcu.edu.tw; Liang, Shan-Chien

    2015-02-15

    Highlights: • P-type Ga-doped SnO{sub 2} semiconductor films were prepared by sol-gel spin coating. • Optical bandgaps of the SnO{sub 2}:Ga films are narrower than that of the SnO{sub 2} film. • SnO{sub 2}:Ga films exhibited p-type conductivity as Ga doping content higher than 10%. • A p-n heterojunction composed of p-type SnO{sub 2}:Ga and n-type ZnO:Al was fabricated. - Abstract: P-type transparent tin oxide (SnO{sub 2}) based semiconductor thin films were deposited onto alkali-free glass substrates by a sol-gel spin-coating method using gallium (Ga) as acceptor dopant. In this study, we investigated the influence of Ga doping concentration ([Ga]/[Sn] + [Ga] = 0%, 5%, 10%, 15%, and 20%) on the structural, optical and electrical properties of SnO{sub 2} thin films. XRD analysis results showed that dried Ga-doped SnO{sub 2} (SnO{sub 2}:Ga) sol-gel films annealed in oxygen ambient at 520 °C for 1 h exhibited only the tetragonal rutile phase. The average optical transmittance of as-prepared thin film samples was higher than 87.0% in the visible light region; the optical band gap energy slightly decreased from 3.92 eV to 3.83 eV with increases in Ga doping content. Hall effect measurement showed that the nature of conductivity of SnO{sub 2}:Ga thin films changed from n-type to p-type when the Ga doping level was 10%, and when it was at 15%, Ga-doped SnO{sub 2} thin films exhibited the highest mean hole concentration of 1.70 × 10{sup 18} cm{sup -3}. Furthermore, a transparent p-SnO{sub 2}:Ga (Ga doping level of 15%)/n-ZnO:Al (Al doping level of 2%) heterojunction was fabricated on alkali-free glass. The I-V curve measurement for the p-n heterojunction diode showed a typical rectifying characteristic with a forward turn-on voltage of 0.65 V.

  15. Methods for enhancing P-type doping in III-V semiconductor films

    Energy Technology Data Exchange (ETDEWEB)

    Liu, Feng; Stringfellow, Gerald; Zhu, Junyi

    2017-08-01

    Methods of doping a semiconductor film are provided. The methods comprise epitaxially growing the III-V semiconductor film in the presence of a dopant, a surfactant capable of acting as an electron reservoir, and hydrogen, under conditions that promote the formation of a III-V semiconductor film doped with the p-type dopant. In some embodiments of the methods, the epitaxial growth of the doped III-V semiconductor film is initiated at a first hydrogen partial pressure which is increased to a second hydrogen partial pressure during the epitaxial growth process.

  16. Chemical Vapor Deposition Growth of Degenerate p-Type Mo-Doped ReS2 Films and Their Homojunction.

    Science.gov (United States)

    Qin, Jing-Kai; Shao, Wen-Zhu; Xu, Cheng-Yan; Li, Yang; Ren, Dan-Dan; Song, Xiao-Guo; Zhen, Liang

    2017-05-10

    Substitutional doping of transition metal dichalcogenide two-dimensional materials has proven to be effective in tuning their intrinsic properties, such as band gap, transport characteristics, and magnetism. In this study, we realized substitutional doping of monolayer rhenium disulfide (ReS2) with Mo via chemical vapor deposition. Scanning transmission electron microscopy demonstrated that Mo atoms are successfully doped into ReS2 by substitutionally replacing Re atoms in the lattice. Electrical measurements revealed the degenerate p-type semiconductor behavior of Mo-doped ReS2 field effect transistors, in agreement with density functional theory calculations. The p-n diode device based on a doped ReS2 and ReS2 homojunction exhibited gate-tunable current rectification behaviors, and the maximum rectification ratio could reach up to 150 at Vd = -2/+2 V. The successful synthesis of p-type ReS2 in this study could largely promote its application in novel electronic and optoelectronic devices.

  17. Fabrication and photoelectric properties of La-doped p-type ZnO nanofibers and crossed p-n homojunctions by electrospinning.

    Science.gov (United States)

    Zhang, H D; Yu, M; Zhang, J C; Sheng, C H; Yan, X; Han, W P; Liu, Y C; Chen, S; Shen, G Z; Long, Y Z

    2015-06-21

    La-doped p-type ZnO nanofibers were successfully synthesized by electrospinning, followed by calcination. The microstructure and morphology of the La-doped ZnO nanofibers were characterized by scanning electron microscopy (SEM), X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS) and Raman spectroscopy. The field effect curve of individual nanofibers confirms that the resulting La-doped ZnO fibers are p-type semiconductors. The doping mechanism is discussed. Furthermore, crossed p-n homojunction nanofibers were also prepared based on electrospun La-doped p-type ZnO and n-type pure ZnO fibers. The current-voltage curve shows the typical rectifying characteristic of a p-n homojunction device. The turn-on voltage appears at about 2.5 V under the forward bias and the reverse current is impassable.

  18. Fabrication and photoelectric properties of La-doped p-type ZnO nanofibers and crossed p-n homojunctions by electrospinning

    Science.gov (United States)

    Zhang, H. D.; Yu, M.; Zhang, J. C.; Sheng, C. H.; Yan, X.; Han, W. P.; Liu, Y. C.; Chen, S.; Shen, G. Z.; Long, Y. Z.

    2015-06-01

    La-doped p-type ZnO nanofibers were successfully synthesized by electrospinning, followed by calcination. The microstructure and morphology of the La-doped ZnO nanofibers were characterized by scanning electron microscopy (SEM), X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS) and Raman spectroscopy. The field effect curve of individual nanofibers confirms that the resulting La-doped ZnO fibers are p-type semiconductors. The doping mechanism is discussed. Furthermore, crossed p-n homojunction nanofibers were also prepared based on electrospun La-doped p-type ZnO and n-type pure ZnO fibers. The current-voltage curve shows the typical rectifying characteristic of a p-n homojunction device. The turn-on voltage appears at about 2.5 V under the forward bias and the reverse current is impassable.

  19. Infrared absorption and visible transparency in heavily doped p-type BaSnO3

    Science.gov (United States)

    Li, Yuwei; Sun, Jifeng; Singh, David J.

    2017-01-01

    The recent experimental work shows that perovskite BaSnO3 can be heavily doped by K to become a stable p-type semiconductor. Here, we find that p-type perovskite BaSnO3 retains transparency for visible light while absorbing strongly in the infrared below 1.5 eV. The origin of the remarkable optical transparency even with heavy doping is that the interband transitions that are enabled by empty states at the top of the valence band are concentrated mainly in the energy range from 0.5 to 1.5 eV, i.e., not extending past the near IR. In contrast to n-type, the Burstein-Moss shift is slightly negative, but very small reflecting the heavier valence bands relative to the conduction bands.

  20. Sensitive optical bio-sensing of p-type WSe2 hybridized with fluorescent dye attached DNA by doping and de-doping effects

    Science.gov (United States)

    Han, Kyu Hyun; Kim, Jun Young; Jo, Seong Gi; Seo, Changwon; Kim, Jeongyong; Joo, Jinsoo

    2017-10-01

    Layered transition metal dichalcogenides, such as MoS2, WSe2 and WS2, are exciting two-dimensional (2D) materials because they possess tunable optical and electrical properties that depend on the number of layers. In this study, the nanoscale photoluminescence (PL) characteristics of the p-type WSe2 monolayer, and WSe2 layers hybridized with the fluorescent dye Cy3 attached to probe-DNA (Cy3/p-DNA), have been investigated as a function of the concentration of Cy3/DNA by using high-resolution laser confocal microscopy. With increasing concentration of Cy3/p-DNA, the measured PL intensity decreases and its peak is red-shifted, suggesting that the WSe2 layer has been p-type doped with Cy3/p-DNA. Then, the PL intensity of the WSe2/Cy3/p-DNA hybrid system increases and the peak is blue-shifted through hybridization with relatively small amounts of target-DNA (t-DNA) (50–100 nM). This effect originates from charge and energy transfer from the Cy3/DNA to the WSe2. For t-DNA detection, our systems using p-type WSe2 have the merit in terms of the increase of PL intensity. The p-type WSe2 monolayers can be a promising nanoscale 2D material for sensitive optical bio-sensing based on the doping and de-doping responses to biomaterials.

  1. Electrical band-gap narrowing in n- and p-type heavily doped silicon at 300 K

    Science.gov (United States)

    Van Cong, H.; Brunet, S.

    1986-09-01

    Based on previous results band-gap narrowing in heavily doped silicon at 300 K is investigated and expressed in terms of impurity size-and-doping effects. The results obtained for n- and p-type heavily doped silicon are compared with other theories and experiments.

  2. Synthesis and characterization of p-type boron-doped IIb diamond large single crystals

    Institute of Scientific and Technical Information of China (English)

    Li Shang-Sheng; Ma Hong-An; Li Xiao-Lei; Su Tai-Chao; Huang Guo-Feng; Li Yong; Jia Xiao-Peng

    2011-01-01

    High-quality p-type boron-doped II0b diamond large single crystals are successfully synthesized by the temperature gradient method in a china-type cubic anvil high-pressure apparatus at about 5.5 GPa and 1600 K. The morphologies and surface textures of the synthetic diamond crystals with different boron additive quantities are characterized by using an optical microscope and a scanning electron microscope respectively. The impurities of nitrogen and boron in diamonds are detected by micro Fourier transform infrared technique. The electrical properties including resistivities, Hall coefficients, Hall mobilities and carrier densities of the synthesized samples are measured by a four-point probe and the Hall effect method. The results show that large p-type boron-doped diamond single crystals with few nitrogen impurities have been synthesized. With the increase of quantity of additive boron, some high-index crystal faces such as {113} gradually disappear, and some stripes and triangle pits occur on the crystal surface. This work is helpful for the further research and application of boron-doped semiconductor diamond.

  3. Valence band states in Si-based p-type delta-doped field effect transistors

    Energy Technology Data Exchange (ETDEWEB)

    Martinez-Orozco, J C; Vlaev, Stoyan J, E-mail: jcmover@correo.unam.m [Unidad Academica de Fisica, Universidad Autonoma de Zacatecas, Calzada Solidaridad esquina con Paseo la Bufa S/N, C.P. 98060, Zacatecas, Zac. (Mexico)

    2009-05-01

    We present tight-binding calculations of the hole level structure of delta-doped Field Effect Transistor in a Si matrix within the first neighbors sp{sup 3}s* semi-empirical tight-binding model including spin. We employ analytical expressions for Schottky barrier potential and the p-type delta-doped well based on a Thomas-Fermi approximation, we consider these potentials as external ones, so in the computations they are added to the diagonal terms of the tight-binding Hamiltonian, by this way we have the possibility to study the energy levels behavior as we vary the backbone parameters in the system: the two-dimensional impurity density (p{sub 2d}) of the p-type delta-doped well and the contact voltage (V{sub c}). The aim of this calculation is to demonstrate that the tight-binding approximation is suitable for device characterization that permits us to propose optimal values for the input parameters involved in the device design.

  4. Few-Layer MoS₂ p-Type Devices Enabled by Selective Doping Using Low Energy Phosphorus Implantation.

    Science.gov (United States)

    Nipane, Ankur; Karmakar, Debjani; Kaushik, Naveen; Karande, Shruti; Lodha, Saurabh

    2016-02-23

    P-type doping of MoS2 has proved to be a significant bottleneck in the realization of fundamental devices such as p-n junction diodes and p-type transistors due to its intrinsic n-type behavior. We report a CMOS compatible, controllable and area selective phosphorus plasma immersion ion implantation (PIII) process for p-type doping of MoS2. Physical characterization using SIMS, AFM, XRD and Raman techniques was used to identify process conditions with reduced lattice defects as well as low surface damage and etching, 4X lower than previous plasma based doping reports for MoS2. A wide range of nondegenerate to degenerate p-type doping is demonstrated in MoS2 field effect transistors exhibiting dominant hole transport. Nearly ideal and air stable, lateral homogeneous p-n junction diodes with a gate-tunable rectification ratio as high as 2 × 10(4) are demonstrated using area selective doping. Comparison of XPS data from unimplanted and implanted MoS2 layers shows a shift of 0.67 eV toward lower binding energies for Mo and S peaks indicating p-type doping. First-principles calculations using density functional theory techniques confirm p-type doping due to charge transfer originating from substitutional as well as physisorbed phosphorus in top few layers of MoS2. Pre-existing sulfur vacancies are shown to enhance the doping level significantly.

  5. A Density Functional Theory Study of Doped Tin Monoxide as a Transparent p-type Semiconductor

    KAUST Repository

    Bianchi Granato, Danilo

    2012-05-01

    In the pursuit of enhancing the electronic properties of transparent p-type semiconductors, this work uses density functional theory to study the effects of doping tin monoxide with nitrogen, antimony, yttrium and lanthanum. An overview of the theoretical concepts and a detailed description of the methods employed are given, including a discussion about the correction scheme for charged defects proposed by Freysoldt and others [Freysoldt 2009]. Analysis of the formation energies of the defects points out that nitrogen substitutes an oxygen atom and does not provide charge carriers. On the other hand, antimony, yttrium, and lanthanum substitute a tin atom and donate n-type carriers. Study of the band structure and density of states indicates that yttrium and lanthanum improves the hole mobility. Present results are in good agreement with available experimental works and help to improve the understanding on how to engineer transparent p-type materials with higher hole mobilities.

  6. Increased Photoconductivity Lifetime in GaAs Nanowires by Controlled n-Type and p-Type Doping.

    Science.gov (United States)

    Boland, Jessica L; Casadei, Alberto; Tütüncüoglu, Gözde; Matteini, Federico; Davies, Christopher L; Jabeen, Fauzia; Joyce, Hannah J; Herz, Laura M; Fontcuberta I Morral, Anna; Johnston, Michael B

    2016-04-26

    Controlled doping of GaAs nanowires is crucial for the development of nanowire-based electronic and optoelectronic devices. Here, we present a noncontact method based on time-resolved terahertz photoconductivity for assessing n- and p-type doping efficiency in nanowires. Using this technique, we measure extrinsic electron and hole concentrations in excess of 10(18) cm(-3) for GaAs nanowires with n-type and p-type doped shells. Furthermore, we show that controlled doping can significantly increase the photoconductivity lifetime of GaAs nanowires by over an order of magnitude: from 0.13 ns in undoped nanowires to 3.8 and 2.5 ns in n-doped and p-doped nanowires, respectively. Thus, controlled doping can be used to reduce the effects of parasitic surface recombination in optoelectronic nanowire devices, which is promising for nanowire devices, such as solar cells and nanowire lasers.

  7. Using the hydrothermal method to grow p-type ZnO nanowires on Al-doped ZnO thin film to fabricate a homojunction diode.

    Science.gov (United States)

    Tseng, Yung-Kuan; Hung, Meng-Chun; Su, Shun-Lung; Li, Sheng-Kai

    2014-10-01

    In this study, the hydrothermal method is used to grow phosphorus-doped ZnO nanowires on Si/SiO2 substrates deposited with Al-doped ZnO thin film. This structure forms a homogeneous p-n junction. In this study, we are the pioneers to use ammonium hypophosphite (NH4H2PO2) as a source of phosphorus to prepare the precursor solution. Ammonium hypophosphite of different concentration levels is used to observe its effects on the growth of nanowires. The results show that the precursor solution prepared from ammonium hypophosphite can produce good crystalline ZnO nanowires while there is no linear relationship between the amounts and concentration levels of phosphorus doped into the nanowires. Whether the phosphorus-doped ZnO nanowires have the characteristics of a p-type semiconductor is indirectly verified by measuring whether the p-n junction made up of Al-doped ZnO thin film and phosphorus-doped ZnO nanowires shows rectifying behavior. I-V measurements are made on the specimens. The results show good rectifying behavior, proving that the phosphorus-doped ZnO nanowires and Al-doped AZO films have p-type and n-type semiconductor properties, constituting a good p-n junction. This result also proves that ammonium hypophosphite is a better source of phosphorus in the hydrothermal method to synthesize phosphorus-doped ZnO nanowires.

  8. P-type nitrogen-doped ZnO nanostructures with controlled shape and doping level by facile microwave synthesis.

    Science.gov (United States)

    Herring, Natalie P; Panchakarla, Leela S; El-Shall, M Samy

    2014-03-04

    We report herein the development of a facile microwave irradiation (MWI) method for the synthesis of high-quality N-doped ZnO nanostructures with controlled morphology and doping level. We present two different approaches for the MWI-assisted synthesis of N-doped ZnO nanostructures. In the first approach, N-doping of Zn-poor ZnO prepared using zinc peroxide (ZnO2) as a precursor is carried out under MWI in the presence of urea as a nitrogen source and oleylamine (OAm) as a capping agent for the shape control of the resulting N-doped ZnO nanostructures. Our approach utilizes the MWI process for the decomposition of ZnO2, where the rapid transfer of energy directly to ZnO2 can cause an instantaneous internal temperature rise and, thus, the activation energy for the ZnO2 decomposition is essentially decreased as compared to the decomposition under conductive heating. In the second synthesis method, a one-step synthesis of N-doped ZnO nanostructures is achieved by the rapid decomposition of zinc acetate in a mixture of urea and OAm under MWI. We demonstrate, for the first time, that MWI decomposition of zinc acetate in a mixture of OAm and urea results in the formation of N-doped nanostructures with controlled shape and N-doping level. We report a direct correlation between the intensity of the Raman scattering bands in N-doped ZnO and the concentration of urea used in the synthesis. Electrochemical measurements demonstrate the successful synthesis of stable p-type N-doped ZnO nanostructures using the one-step MWI synthesis and, therefore, allow us to investigate, for the first time, the relationship between the doping level and morphology of the ZnO nanostructures. The results provide strong evidence for the control of the electrical behavior and the nanostructured shapes of ZnO nanoparticles using the facile MWI synthesis method developed in this work.

  9. Robust p-type doping of copper oxide using nitrogen implantation

    Science.gov (United States)

    Jorge, Marina; Polyakov, Stanislav M.; Cooil, Simon; Schenk, Alex K.; Edmonds, Mark; Thomsen, Lars; Mazzola, Federico; Wells, Justin W.

    2017-07-01

    We demonstrate robust p-type doping of Cu2O using low/medium energy ion implantation. Samples are made by controlled oxidation of annealed Cu metal foils, which results in Cu2O with levels of doping close to intrinsic. Samples are then implanted with nitrogen ions using a kinetic energy in the few keV range. Using this method, we are able to produce very high levels of doping, as evidenced by a 350 meV shift in the Fermi level towards the VB maximum. The robustness of the nitrogen implanted samples are tested by exposing them to atmospheric contaminants, and elevated temperatures. The samples are found to survive an increase in temperature of many hundreds of degrees. The robustness of the samples, combined with the fact that the materials used are safe, abundant and non-toxic and that the methods used for the growth of Cu2O and N+ implantation are simple and cheap to implement industrially, underlines the potential of Cu2O:N for affordable intermediate band photovoltaics.

  10. InP nanowire p-type doping via Zinc indiffusion

    Science.gov (United States)

    Haggren, Tuomas; Otnes, Gaute; Mourão, Renato; Dagyte, Vilgaile; Hultin, Olof; Lindelöw, Fredrik; Borgström, Magnus; Samuelson, Lars

    2016-10-01

    We report an alternative pathway for p-type InP nanowire (NW) doping by diffusion of Zn species from the gas phase. The diffusion of Zn was performed in a MOVPE reactor at 350-500 °C for 5-20 min with either H2 environment or additional phosphorus in the atmosphere. In addition, Zn3P2 shells were studied as protective caps during post-diffusion annealing. This post-diffusion annealing was performed to outdiffuse and activate Zn in interstitial locations. The characterization methods included photoluminescence and single NW conductivity and carrier concentration measurements. The acquired carrier concentrations were in the order of >1017 cm-3 for NWs without post-annealing, and up to 1018 cm-3 for NWs annealed with the Zn3P2 shells. The diffused Zn caused redshift to the photoluminescence signal, and the degree of redshift depended on the diffusion process.

  11. An Sb-doped p-type ZnO nanowire based random laser diode.

    Science.gov (United States)

    Bashar, Sunayna B; Suja, Mohammad; Morshed, Muhammad; Gao, Fan; Liu, Jianlin

    2016-02-12

    An electrically pumped Sb-doped ZnO nanowire/Ga-doped ZnO p-n homojunction random laser is demonstrated. Catalyst-free Sb-doped ZnO nanowires were grown on a Ga-doped ZnO thin film on a Si substrate by chemical vapor deposition. The morphology of the as-grown titled nanowires was observed by scanning electron microscopy. X-ray photoelectron spectroscopy results indicated the incorporation of Sb dopants. Shallow acceptor states of Sb-doped nanowires were confirmed by photoluminescence measurements. Current-voltage measurements of ZnO nanowire structures assembled from p- and n-type materials showed a typical p-n diode characteristic with a threshold voltage of about 7.5 V. Very good photoresponse was observed in the UV region operated at 0 V and different reverse biases. Random lasing behavior with a low-threshold current of around 10 mA was demonstrated at room temperature. The output power was 170 nW at 30 mA.

  12. High performance p-type NiOx thin-film transistor by Sn doping

    Science.gov (United States)

    Lin, Tengda; Li, Xiuling; Jang, Jin

    2016-06-01

    Major obstacles towards power efficient complementary electronics employing oxide thin-film transistors (TFTs) lie in the lack of equivalent well performing p-channel devices. Here, we report a significant performance enhancement of solution-processed p-type nickel oxide (NiOx) TFTs by introducing Sn dopant. The Sn-doped NiOx (Sn-NiOx) TFTs annealed at 280 °C demonstrate substantially improved electrical performances with the increase in the on/off current ratio (Ion/Ioff) by ˜100 times, field-effect mobility (μlin) by ˜3 times, and the decrease in subthreshold swing by half, comparing with those of pristine NiOx TFTs. X-ray photoelectron spectroscopy and X-ray diffraction results confirm that Sn atoms tend to substitute Ni sites and induce more amorphous phase. A decrease in density of states in the gap of NiOx by Sn doping and the shift of Fermi level (EF) into the midgap lead to the improvements of TFT performances. As a result, Sn-NiOx can be a promising material for the next-generation, oxide-based electronics.

  13. Pristine and Al-doped hematite printed films as photoanodes of p-type dye-sensitized solar cells

    Science.gov (United States)

    Congiu, Mirko; De Marco, Maria L.; Bonomo, Matteo; Nunes-Neto, Oswaldo; Dini, Danilo; Graeff, Carlos F. O.

    2017-01-01

    We hereby propose a non-expensive method for the deposition of pure and Al-doped hematite photoanodes in the configuration of thin films for the application of dye-sensitized solar cells (DSSC). The electrodes have been prepared from hematite nanoparticles that were obtained by thermal degradation of a chemical precursor. The particles have been used in the preparation of a paste, suitable for both screen printing and doctor blade deposition. The paste was then spread on fluorine-doped tin oxide (FTO) to obtain porous hematite electrodes. The electrodes have been sensitized using N3 and D5 dyes and were characterized through current/voltage curves under simulated sun light (1 sun, AM 1.5) with a Pt counter electrode. Al-doping of hematite showed interesting changes in the physical and electrochemical characteristics of sensitized photoanodes since we could notice the growth of AlFe2O4 (hercynite) as a secondary crystal phase into the oxides obtained by firing the mixtures of two chemical precursors at different molar ratios. Pure and Al-doped hematite electrodes have been used in a complete n-type DSSCs. The kinetics of charge transfer through the interface dye/electrolyte was studied and compared to that of a typical p-type DSSC based on NiO photocathodes sensitized with erythrosine B. The results suggest a potential application of both Fe2O3 and Fe2O3/AlFe2O4 as photoanodes of a tandem DSSC.

  14. The electrical properties of photodiodes based on nanostructure gallium doped cadmium oxide/p-type silicon junctions

    Science.gov (United States)

    Çavaş, M.; Yakuphanoğlu, F.; Karataş, Ş.

    2017-01-01

    Gallium doped cadmium-oxide (CdO: Ga) thin films were successfully deposited by sol-gel spin coating method on p-type Si substrate. The electrical properties of the photodiode based on nanostructure Ga doped n-CdO/p-Si junctions were investigated. The current-voltage (I-V) characteristics of the structure were investigated under various light intensity and dark. It was observed that generated photocurrent of the Au/n-CdO/p-Si junctions depended on light intensity. The capacitance-voltage and conductance-voltage measurements were carried out for this diode in the frequency range between 100 and 1000 kHz at room temperature by steps of 100 kHz. The capacitance decreased with increasing frequency due to a continuous distribution of the interface states. These results suggested that the Au/n-CdO/p-Si Schottky junctions could be utilized as a photosensor. Furthermore, the voltage and frequency dependence of series resistance were calculated from the C-V and G/ω-V measurements and plotted as functions of voltage and frequency. The distribution profile of R S -V gave a peak in the depletion region at low frequencies and disappeared with increasing frequencies.

  15. Ferromagnetic ordering of Cr and Fe doped p-type diamond: An ab initio study

    Energy Technology Data Exchange (ETDEWEB)

    Benecha, E. M. [Department of Physics, University of South Africa, P.O Box 392, UNISA 0003, Pretoria (South Africa); Lombardi, E. B. [College of Graduate Studies, University of South Africa, P.O Box 392, UNISA 0003, Pretoria (South Africa)

    2014-02-21

    Ferromagnetic ordering of transition metal dopants in semiconductors holds the prospect of combining the capabilities of semiconductors and magnetic systems in single hybrid devices for spintronic applications. Various semiconductors have so far been considered for spintronic applications, but low Curie temperatures have hindered room temperature applications. We report ab initio DFT calculations on the stability and magnetic properties of Fe and Cr impurities in diamond, and show that their ground state magnetic ordering and stabilization energies depend strongly on the charge state and type of co-doping. We predict that divacancy Cr{sup +2} and substitutional Fe{sup +1} order ferromagnetically in p-type diamond, with magnetic stabilization energies (and magnetic moment per impurity ion) of 16.9 meV (2.5 μ{sub B}) and 33.3 meV (1.0 μ{sub B}), respectively. These magnetic stabilization energies are much larger than what has been achieved in other semiconductors at comparable impurity concentrations, including the archetypal dilute magnetic semiconductor GaAs:Mn. In addition, substitutional Fe{sup +1} exhibits a strong half-metallic character, with the Fermi level crossing bands in only the spin down channel. These results, combined with diamond’s extreme properties, demonstrate that Cr or Fe dopedp-type diamond may successfully be considered in the search for room temperature spintronic materials.

  16. Growth of antimony doped P-type zinc oxide nanowires for optoelectronics

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Zhong Lin; Pradel, Ken

    2016-09-27

    In a method of growing p-type nanowires, a nanowire growth solution of zinc nitrate (Zn(NO.sub.3).sub.2), hexamethylenetetramine (HMTA) and polyethylenemine (800 M.sub.w PEI) is prepared. A dopant solution to the growth solution, the dopant solution including an equal molar ration of sodium hydroxide (NaOH), glycolic acid (C.sub.2H.sub.4O.sub.3) and antimony acetate (Sb(CH.sub.3COO).sub.3) in water is prepared. The dopant solution and the growth solution combine to generate a resulting solution that includes antimony to zinc in a ratio of between 0.2% molar to 2.0% molar, the resulting solution having a top surface. An ammonia solution is added to the resulting solution. A ZnO seed layer is applied to a substrate and the substrate is placed into the top surface of the resulting solution with the ZnO seed layer facing downwardly for a predetermined time until Sb-doped ZnO nanowires having a length of at least 5 .mu.m have grown from the ZnO seed layer.

  17. Sodium and potassium doped P-type ZnO films by sol-gel spin-coating technique

    Science.gov (United States)

    Au, Benedict Wen-Cheun; Chan, Kah-Yoong

    2017-07-01

    Zinc oxide (ZnO) is a promising material in a variety of applications including sensors, transistors and solar cells. Many researchers studied N-type ZnO films and reported enhanced properties. On the other hand, P-type ZnO films were rarely attempted due to the self-compensation effect. Success in achieving P-type ZnO films is important as it will pave the way for more advanced complementary devices. In this work, P-type sodium and potassium doped ZnO films were fabricated on glass substrates with doping concentration between 0 and 25 at.%. The influences of doping concentration on surface morphology, structural, optical and electrical properties were investigated using atomic force microscopy, X-ray diffraction spectroscopy, energy-dispersive X-ray spectroscopy, ultraviolet-visible (UV-Vis) spectrophotometer, photoluminescence spectroscopy and Hall-effect electrical transport measurement system. The distinctive behavior of P-type ZnO films with different doping concentrations will be discussed.

  18. Growth of nitrogen-doped p-type ZnO thin films prepared by atomic layer epitaxy

    Institute of Scientific and Technical Information of China (English)

    LEE Chongmu; LIM Jongmin; PARK Suyoung; KIM Hyounwoo

    2006-01-01

    Nitrogen-doped, p-type ZnO thin films were grown successfully on sapphire (0001) substrates by using atomic layer epitaxy (ALE). Zn(C2H5)2[Diethylzinc,DEZn], H2O and NH3 were used as a zinc precursor, an oxidant and a doping source gas, respectively. The lowest electrical resistivity of the p-type ZnO films grown by ALE and annealed at 1000 ℃ in an oxygen atmosphere for 1 h was 18.3 Ω·m with a hole concentration of 3.71×1017cm-3 . Low temperature-photoluminescence analysis and time-dependent Hall measurement results support that the nitrogen-doped ZnO after annealing is ap-type semiconductor.

  19. Fabrication and Characterization of N-Type Zinc Oxide/P-Type Boron Doped Diamond Heterojunction

    National Research Council Canada - National Science Library

    Marián Marton; Miroslav Mikolášek; Jaroslav Bruncko; Ivan Novotný; Tibor Ižák; Marian Vojs; Halyna Kozak; Marián Varga; Anna Artemenko; Alexander Kromka

    2015-01-01

    .... Semiconducting boron doped diamond (BDD) thin films were grown on Si and UV grade silica glass substrates by HFCVD method with various boron concentration in the gas mixture. Doped zinc oxide (ZnO:Al, ZnO:Ge...

  20. Perovskite Sr-doped LaCrO3 as a new p-type transparent conducting oxide

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, Hongliang; Du, Yingge; Papadogianni, Alexandra; Bierwagen, Oliver; Sallis, Shawn; Piper, Louis F. J.; Bowden, Mark E.; Shutthanandan, V.; Sushko, Petr; Chambers, Scott A.

    2015-09-16

    Transparent conducting oxides (TCOs) constitute a unique class of materials which combine the seemingly mutually exclusive properties of electrical conductivity and optical transparency in a single material. TCOs are useful for a wide range of applications including solar cells, displays, light emitting diodes and transparent electronics. Simple post-transition metal oxides such as ZnO, In2O3 and SnO2 are wide gap insulators in which the ionic character generates an oxygen 2p-derived valence band (VB) and a metal s-derived conduction band (CB), resulting in large optical band gaps (>3.0 eV) and excellent n-type conductivity when donor doped. In contrast, the development of efficient p-type TCOs remains a global materials challenge. Converting n-type oxides to p-type analogs by acceptor doping is extremely difficult and these materials display poor conductivity.

  1. The synthesis and characterization of Ag-N dual-doped p-type ZnO: experiment and theory.

    Science.gov (United States)

    Duan, Li; Wang, Pei; Yu, Xiaochen; Han, Xiao; Chen, Yongnan; Zhao, Peng; Li, Donglin; Yao, Ran

    2014-03-07

    Ag-N dual-doped ZnO films have been fabricated by a chemical bath deposition method. The p-type conductivity of the dual-doped ZnO:(Ag, N) is stable over a long period of time, and the hole concentration in the ZnO:(Ag, N) is much higher than that in mono-doped ZnO:Ag or ZnO:N. We found that this is because AgZn-NO complex acceptors can be formed in ZnO:(Ag, N). First-principles calculations show that the complex acceptors generate a fully occupied band above the valance band maximum, so the acceptor levels become shallower and the hole concentration is increased. Furthermore, the binding energy of the Ag-N complex in ZnO is negative, so ZnO:(Ag, N) can be stable. These results indicate that the Ag-N dual-doping may be expected to be a potential route to achieving high-quality p-type ZnO for use in a variety of devices.

  2. Compensation of native donor doping in ScN: Carrier concentration control and p-type ScN

    Science.gov (United States)

    Saha, Bivas; Garbrecht, Magnus; Perez-Taborda, Jaime A.; Fawey, Mohammed H.; Koh, Yee Rui; Shakouri, Ali; Martin-Gonzalez, Marisol; Hultman, Lars; Sands, Timothy D.

    2017-06-01

    Scandium nitride (ScN) is an emerging indirect bandgap rocksalt semiconductor that has attracted significant attention in recent years for its potential applications in thermoelectric energy conversion devices, as a semiconducting component in epitaxial metal/semiconductor superlattices and as a substrate material for high quality GaN growth. Due to the presence of oxygen impurities and native defects such as nitrogen vacancies, sputter-deposited ScN thin-films are highly degenerate n-type semiconductors with carrier concentrations in the (1-6) × 1020 cm-3 range. In this letter, we show that magnesium nitride (MgxNy) acts as an efficient hole dopant in ScN and reduces the n-type carrier concentration, turning ScN into a p-type semiconductor at high doping levels. Employing a combination of high-resolution X-ray diffraction, transmission electron microscopy, and room temperature optical and temperature dependent electrical measurements, we demonstrate that p-type Sc1-xMgxN thin-film alloys (a) are substitutional solid solutions without MgxNy precipitation, phase segregation, or secondary phase formation within the studied compositional region, (b) exhibit a maximum hole-concentration of 2.2 × 1020 cm-3 and a hole mobility of 21 cm2/Vs, (c) do not show any defect states inside the direct gap of ScN, thus retaining their basic electronic structure, and (d) exhibit alloy scattering dominating hole conduction at high temperatures. These results demonstrate MgxNy doped p-type ScN and compare well with our previous reports on p-type ScN with manganese nitride (MnxNy) doping.

  3. First-principles study of p-type ZnO by S-Na co-doping

    Science.gov (United States)

    Tan, Xingyi; Li, Qiang; Zhu, Yongdan

    2017-08-01

    Using the first-principles method based on the density functional theory, the formation energy, electronic structures of S-Na co-doping in ZnO were calculated. The calculated results show that NaZn-SO have smaller formation energy than Nain-SO in energy ranges from -3.10 to 0 eV of {μ }{{O}}, indicating that it opens up a new opportunity for growth the p-type ZnO. The band structure shows that the NaZn system is a p-type direct-band-gap semiconductor material and the calculated band gap (0.84 eV) is larger than pure ZnO (0.74 eV). The NaZn-SO system is also a p-type semiconductor material with a direct band gap (0.80 eV). The influence of S-Na co-doping in ZnO on p-type conductivity is also discussed. The effective masses of NaZn-SO are larger than effective masses of NaZn and the NaZn-SO have more hole carriers than NaZn, meaning the hole in the NaZn-SO system may have a better carrier transfer character. So we inferred that NaZn-SO should be a candidate of p-type conduction. Project supported by the Natural Science Foundation of Hubei Province, China (Nos. 2014CFB342, 2014CFB619) and the Doctoral Foundation for Scientific Research of Hubei University for Nationalities (No. MY2013B020).

  4. Emitter formation using laser doping technique on n- and p-type c-Si substrates

    Energy Technology Data Exchange (ETDEWEB)

    López, G., E-mail: gema.lopez@upc.edu; Ortega, P.; Colina, M.; Voz, C.; Martín, I.; Morales-Vilches, A.; Orpella, A.; Alcubilla, R.

    2015-05-01

    Highlights: • We use laser doping technique to create highly-doped regions. • Dielectric layers are used as both passivating layer and dopant source. • The high quality of the junctions makes laser doping technique using dielectric layers as dopant source suitable for solar cells applications. - Abstract: In this work laser doping technique is used to create highly-doped regions defined in a point-like structure to form n+/p and p+/n junctions applying a pulsed Nd-YAG 1064 nm laser in the nanosecond regime. In particular, phosphorous-doped silicon carbide stacks (a-SiC{sub x}/a-Si:H (n-type)) deposited by Plasma Enhanced Chemical Vapor Deposition (PECVD) and aluminum oxide (Al{sub 2}O{sub 3}) layers deposited by atomic layer deposition (ALD) on 2 ± 0.5 Ω cm p- and n-type FZ c-Si substrates respectively are used as dopant sources. Laser power and number of pulses per spot are explored to obtain the optimal electrical behavior of the formed junctions. To assess the quality of the p+ and n+ regions, the junctions are electrically contacted and characterized by means of dark J–V measurements. Additionally, a diluted HF treatment previous to front metallization has been explored in order to know its impact on the junction quality. The results show that fine tuning of the energy pulse is critical while the number of pulses has minor effect. In general the different HF treatments have no impact in the diode electrical behavior except for an increase of the leakage current in n+/p junctions. The high electrical quality of the junctions makes laser doping, using dielectric layers as dopant source, suitable for solar cell applications. Particularly, a potential open circuit voltage of 0.64 V (1 sun) is expected for a finished solar cell.

  5. Effect of doping concentration on the conductivity and optical properties of p-type ZnO thin films

    Energy Technology Data Exchange (ETDEWEB)

    Pathak, Trilok Kumar [Semiconductor Research Lab, Department of Physics, Gurukula Kangri University, Haridwar (India); Kumar, Vinod, E-mail: vinod.phy@gmail.com [Department of Physics, University of the Free State, Bloemfontein (South Africa); Swart, H.C., E-mail: swarthc@ufs.ac.za [Department of Physics, University of the Free State, Bloemfontein (South Africa); Purohit, L.P., E-mail: proflppurohitphys@gmail.com [Semiconductor Research Lab, Department of Physics, Gurukula Kangri University, Haridwar (India)

    2016-01-01

    Nitrogen doped ZnO (NZO) thin films were synthesized on glass substrates by the sol–gel and spin coating method. Zinc acetate dihydrates and ammonium acetate were used as precursors for zinc and nitrogen, respectively. X-ray diffraction study showed that the thin films have a hexagonal wurtzite structure corresponding (002) peak for undoped and doped ZnO thin films. The transmittance of the films was above 80% and the band gap of the film varies from 3.21±0.03 eV for undoped and doped ZnO. The minimum resistivity of NZO thin films was obtained as 0.473 Ω cm for the 4 at% of nitrogen (N) doping with a mobility of 1.995 cm{sup 2}/V s. The NZO thin films showed p-type conductivity at 2 and 3 at% of N doping. The AC conductivity measurements that were carried out in the frequency range 10 kHz to 0.1 MHz showed localized conduction in the NZO thin films. These highly transparent ZnO films can be used as a possible window layer in solar cells.

  6. Growth and electrical properties of high-quality Mg-doped P-type A10.2Ga0.8N films

    Institute of Scientific and Technical Information of China (English)

    Zhou Xiaowei; Li Peixian; Xu Shengrui; Hao Yue

    2009-01-01

    The growth of high-performance Mg-doped p-type AlxGa1-xN(X=0.2)using metal-organic chemical vapor deposition is reported.The influence of growth conditions(growth temperature,magnesium flow,and thermal annealing temperature)on the electrical properties of Mg-doped p-type AlxGa1-xN(X=0.2)has been investigated.Using the optimized conditions,we obtained a minimum p-type resistivity of 0.71 Ωcm for p-type AlGaN with 20% Al fraction.

  7. Low p-type contact resistance by field-emission tunneling in highly Mg-doped GaN

    Science.gov (United States)

    Okumura, Hironori; Martin, Denis; Grandjean, Nicolas

    2016-12-01

    Mg-doped GaN with a net acceptor concentration (NA-ND) in the high 1019 cm-3 range was grown using ammonia molecular-beam epitaxy. Electrical properties of NiO contact on this heavily doped p-type GaN were investigated. A potential-barrier height of 0.24 eV was extracted from the relationship between NA-ND and the specific contact resistivity (ρc). We found that there is an optimum NA-ND value of 5 × 1019 cm-3 for which ρc is as low as 2 × 10-5 Ω cm2. This low ρc is ascribed to hole tunneling through the potential barrier at the NiO/p+-GaN interface, which is well accounted for by the field-emission model.

  8. The fabrication of Na doped p-type Zn1- x Mg x O films by pulsed laser deposition

    Science.gov (United States)

    Zhang, L. Q.; Zhang, Y. Z.; Ye, Z. Z.; Lin, S. S.; Lu, B.; He, H. P.; Chen, L. X.; Lu, J. G.; Jiang, J.; Wu, K. W.; Huang, J. Y.; Zhu, L. P.

    2012-01-01

    P-type Zn1- x Mg x O (0≤ x≤0.25) films are obtained through Na doping, as confirmed by repeated Hall-effect measurements and rectification behavior of p-Zn0.81Mg0.19O:Na/ n-Zn0.8Mg0.2O:Al quasi-homojunctions. The absorption and photoluminescence spectra indicate the band gap shifts to higher energy in linearly proportional to Mg content. Critically, X-ray diffraction (XRD) patterns reveal that the strain induced by Na doping can be counteracted through an appropriate content of Mg alloying. Both XRD data and Hall-effect data imply that the solubility of Na acceptor should be enhanced by alloying with Mg. The X-ray photoelectron spectrum (XPS) result indicates the existence of Na. Microstructure structure of the film is confirmed by high-resolution transmission electron microscope.

  9. Emitter formation using laser doping technique on n- and p-type c-Si substrates

    Science.gov (United States)

    López, G.; Ortega, P.; Colina, M.; Voz, C.; Martín, I.; Morales-Vilches, A.; Orpella, A.; Alcubilla, R.

    2015-05-01

    In this work laser doping technique is used to create highly-doped regions defined in a point-like structure to form n+/p and p+/n junctions applying a pulsed Nd-YAG 1064 nm laser in the nanosecond regime. In particular, phosphorous-doped silicon carbide stacks (a-SiCx/a-Si:H (n-type)) deposited by Plasma Enhanced Chemical Vapor Deposition (PECVD) and aluminum oxide (Al2O3) layers deposited by atomic layer deposition (ALD) on 2 ± 0.5 Ω cm p- and n-type FZ c-Si substrates respectively are used as dopant sources. Laser power and number of pulses per spot are explored to obtain the optimal electrical behavior of the formed junctions. To assess the quality of the p+ and n+ regions, the junctions are electrically contacted and characterized by means of dark J-V measurements. Additionally, a diluted HF treatment previous to front metallization has been explored in order to know its impact on the junction quality. The results show that fine tuning of the energy pulse is critical while the number of pulses has minor effect. In general the different HF treatments have no impact in the diode electrical behavior except for an increase of the leakage current in n+/p junctions. The high electrical quality of the junctions makes laser doping, using dielectric layers as dopant source, suitable for solar cell applications. Particularly, a potential open circuit voltage of 0.64 V (1 sun) is expected for a finished solar cell.

  10. P-Type Doping of GaN by Mg+ Implantation

    Institute of Scientific and Technical Information of China (English)

    YAO Shu-De; ZHAO Qiang; ZHOU Sheng-Qiang; YANG Zi-Jian; LU Yi-Hong; SUN Chang-Chun; SUN Chang; ZHANG Guo-Yi; VANTOMME Andre; PIPELEERS Bert

    2003-01-01

    Mg+ and Mg++P+ were introduced into GaN by ion implantation. The structure and crystalline quality of the GaN samples were analysed by Rutherford backscattering and channelling spectrometry before (xmin = 1.6%) and after implantation (Xmin = 4.1%). X-ray diffraction reveals the existence of implantation-induced damage in the case of post-implantation followed by rapid thermal annealing. The resistivity, average factor, carrier concentration and carrier mobility were measured by the Hall effect. The transformation from n-type to p-type for GaN was observed.

  11. A study of structural, electrical, and optical properties of p-type Zn-doped SnO2 films versus deposition and annealing temperature

    Science.gov (United States)

    Le, Tran; Phuc Dang, Huu; Luc, Quang Ho; Hieu Le, Van

    2017-04-01

    This study presents a detailed investigation of the structural, electrical, and optical properties of p-type Zn-doped SnO2 versus the deposition and annealing temperature. Using a direct-current (DC) magnetron sputtering method, p-type transparent conductive Zn-doped SnO2 (ZTO) films were deposited on quartz glass substrates. Zn dopants incorporated into the SnO2 host lattice formed the preferred dominant SnO2 (1 0 1) and (2 1 1) planes. X-ray photoelectron spectroscopy (XPS) was used for identifying the valence state of Zn in the ZTO film. The electrical property of ZTO films changed from n-type to p-type at the threshold temperature of 400 °C, and the films achieved extremely high conductivity at the optimum annealing temperature of 600 °C after annealing for 2 h. The best conductive property of the film was obtained on a 10 wt% ZnO-doped SnO2 target with a resistivity, hole concentration, and hole mobility of 0.22 Ω · cm, 7.19  ×  1018 cm-3, and 3.95 cm2 V-1 s-1, respectively. Besides, the average transmission of films was  >84%. The surface morphology of films was examined using scanning electron microscopy (SEM). Moreover, the acceptor level of Zn2+ was identified using photoluminescence spectra at room temperature. Current-voltage (I-V) characteristics revealed the behavior of a p-ZTO/n-Si heterojunction diode.

  12. Hole subband structure in single and double p-type {delta}-doped diamond quantum wells

    Energy Technology Data Exchange (ETDEWEB)

    Rodriguez-Vargas, I. [Facultad de Ciencias, Univ. Autonoma del Estado de Morelos, Av. Universidad 1001, C.P. 62209, Cuernavaca (Mexico); Duque, C.A. [Inst. de Fisica, Universidad de Antioquia, AA 1226, Medellin (Colombia); Mora-Ramos, M.E. [Facultad de Ciencias, Univ. Autonoma del Estado de Morelos, Av. Universidad 1001, C.P. 62209, Cuernavaca (Mexico); Inst. de Ciencia de Materiales de Madrid, CSIC, Sor Juana Ines de la Cruz 3, 28049 Madrid (Spain); Velasco, V.R. [Inst. de Ciencia de Materiales de Madrid, CSIC, Sor Juana Ines de la Cruz 3, 28049 Madrid (Spain)

    2007-07-01

    Heavy, light, and split-off hole states in single and double p-{delta}-doped diamond quantum wells are studied with the use of a 6 x 6 k.p model. The effective mass Hamiltonian is solved using a local density Thomas-Fermi-Dirac approximation for the description of the band bending profile. The features of the valence band spectrum are briefly discussed in both cases. (copyright 2007 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  13. Microhardness of carbon-doped (111) p-type Czochralski silicon

    Science.gov (United States)

    Danyluk, S.; Lim, D. S.; Kalejs, J.

    1985-01-01

    The effect of carbon on (111) p-type Czochralski silicon is examined. The preparation of the silicon and microhardness test procedures are described, and the equation used to determine microhardness from indentations in the silicon wafers is presented. The results indicate that as the carbon concentration in the silicon increases the microhardness increases. The linear increase in microhardness is the result of carbon hindering dislocation motion, and the effect of temperature on silicon deformation and dislocation mobility is explained. The measured microhardness was compared with an analysis which is based on dislocation pinning by carbon; a good correlation was observed. The Labusch model for the effect of pinning sites on dislocation motion is given.

  14. Nanopore formation on low-doped p-type silicon under illumination

    Energy Technology Data Exchange (ETDEWEB)

    Chiboub, N. [UDTS, 02 Bd. Frantz Fanon, B.P. 140, Alger-7 Merveilles, 16200 Algiers (Algeria); Gabouze, N., E-mail: ngabouze@yahoo.fr [UDTS, 02 Bd. Frantz Fanon, B.P. 140, Alger-7 Merveilles, 16200 Algiers (Algeria); Chazalviel, J.-N.; Ozanam, F. [Physique de la Matiere Condensee, Ecole Polytechnique, CNRS, 91128 Palaiseau (France); Moulay, S. [Universite Saad Dahleby, B.P. 270, Route de Soumaa, Blida (Algeria); Manseri, A. [UDTS, 02 Bd. Frantz Fanon, B.P. 140, Alger-7 Merveilles, 16200 Algiers (Algeria)

    2010-04-01

    Porous silicon layers were elaborated by anodization of highly resistive p-type silicon in HF/ethylene glycol solution under front side illumination, as a function of etching time, HF concentration and illumination intensity. The porous layer morphology was investigated by scanning electron microscopy (SEM). The illumination during anodization was provided by a tungsten lamp or lasers of different wavelengths. Under anodization, a microporous layer is formed up to a critical thickness above which macropores appear. Under illumination, the instability limiting the growth of the microporous layer occurs at a critical thickness much larger than in the dark. This critical thickness depends on HF concentration, illumination wavelength and intensity. These non-trivial dependencies are rationalized in a model in which photochemical etching in the electrochemically formed porous layer plays the central role.

  15. P-type ZnO films by phosphorus doping using plasma immersion ion-implantation technique

    Science.gov (United States)

    Nagar, S.; Chakrabarti, S.

    2013-03-01

    ZnO has been a subject of intense research in the optoelectronics community owing to its wide bandgap (3.3eV) and large exciton binding energy (60meV). However, difficulty in doping it p-type posts a hindrance in fabricating ZnO-based devices. In order to make p-type ZnO films, phosphorus implantation, using plasma immersion ion-implantation technique (2kV, 900W, 10μs pulse width) for 30 seconds, was performed on ZnO thin film deposited by RF Magnetron Sputtering (Sample A). The implanted samples were subsequently rapid thermal annealed at 700°C and 1000°C (Samples B and C) in oxygen environment for 30 seconds. Low temperature (8K) photoluminescence spectra reveal dominant donor-bound exciton (D°X) peak at 3.36eV for samples A and B. However, for Sample B the peaks around 3.31eV and 3.22eV corresponding to the free electron-acceptor (FA) and donor to acceptor pair peaks (DAP) are also observed. A dominant peak around 3.35eV, corresponding to acceptor bound exciton (A°X) peak, is detected for Sample C along with the presence of FA and DAP peaks around 3.31eV and 3.22eV. Moreover, the deep level peak around 2.5eV is higher for Sample B which may be due to implantation and acceptor related defects. However, for Sample C, the deep level peaks are very weak compared to the near band edge peaks confirming that these peaks are mainly due to intrinsic defects and not related to acceptors. These results clearly show us a promising way to achieve p-type ZnO films using phosphorus doping.

  16. Room temperature p-type conductivity and coexistence of ferroelectric order in ferromagnetic Li doped ZnO nanoparticles

    KAUST Repository

    Awan, Saif Ullah

    2014-10-28

    Memory and switching devices acquired new materials which exhibit ferroelectric and ferromagnetic order simultaneously. We reported multiferroic behavior in Zn1-yLiyO(0.00≤y≤0.10) nanoparticles. The analysis of transmission electron micrographs confirmed the hexagonal morphology and wurtzite crystalline structure. We investigated p-type conductivity in doped samples and measured hole carriers in range 2.4×1017/cc to 7.3×1017/cc for different Li contents. We found that hole carriers are responsible for long range order ferromagnetic coupling in Li doped samples. Room temperature ferroelectric hysteresis loops were observed in 8% and 10% Li doped samples. We demonstrated ferroelectric coercivity (remnant polarization) 2.5kV/cm (0.11 μC/cm2) and 2.8kV/cm (0.15 μC/cm2) for y=0.08 and y=0.10 samples. We propose that the mechanism of Li induced ferroelectricity in ZnO is due to indirect dipole interaction via hole carriers. We investigated that if the sample has hole carriers ≥5.3×1017/cc, they can mediate the ferroelectricity. Ferroelectric and ferromagnetic measurements showed that higher electric polarization and larger magnetic moment is attained when the hole concentration is larger and vice versa. Our results confirmed the hole dependent coexistence of ferromagnetic and ferroelectric behavior at room temperature, which provide potential applications for switchable and memory devices.

  17. Thomas-Fermi approximation in two p-type delta-doped quantum wells in GaAs an Si

    Energy Technology Data Exchange (ETDEWEB)

    Gaggero-Sager, L. M. [Universidad Autonoma de Zacatecas, Zacatecas (Mexico); M' Peko, J. C.; Perez Alvarez, R. [Universidad de La Habana, Ciudad Habana (Cuba)

    2001-04-01

    Thomas-Fermi calculations of the hole subband structure in two coupled p-type d-doped GaAs and Si quantum wells are carried out as a function of the impurity concentration and the distance l between them. A simple formula is obtained for the potential as a function of these two magnitudes by both types of systems. The numerical results for a double Be-{delta}-doped GaAs (double B-{delta}-doped Si) quantum well show that the energy levels degenerate for l{>=}300 A(l{>=}200 A) for an impurity concentration of 1 x 10{sup 1}3 cm{sup -2}. [Spanish] Presentamos calculos de la estructura de subbandas de huecos, utilizando la aproximacion de Thomas-Fermi para dos pozos cuanticos d-dopados tipo p en GaAs y Si, como funcion de la concentracion de impurezas y de la distancia l entre ambos para los dos tipos de sistemas. Los resultados numericos muestran que para un pozo doble de B-{delta}-dopado GaAs (pozo doble de B-{delta}-dopado Si) con una concentracion de 1 x 10{sup 1}3 cm{sup -2} los niveles estan degenerados para l{>=}300 A(l{>=}200 A).

  18. Semiconductor systems utilizing materials that form rectifying junctions in both N and P-type doping regions, whether metallurgically or field induced, and methods of use

    Science.gov (United States)

    Welch, James D.

    2000-01-01

    Disclosed are semiconductor systems, such as integrated circuits utilizing Schotky barrier and/or diffused junction technology, which semiconductor systems incorporate material(s) that form rectifying junctions in both metallurgically and/or field induced N and P-type doping regions, and methods of their use. Disclosed are Schottky barrier based inverting and non-inverting gate voltage channel induced semiconductor single devices with operating characteristics similar to multiple device CMOS systems and which can be operated as modulators, N and P-channel MOSFETS and CMOS formed therefrom, and (MOS) gate voltage controlled rectification direction and gate voltage controlled switching devices, and use of such material(s) to block parasitic current flow pathways. Simple demonstrative five mask fabrication procedures for inverting and non-inverting gate voltage channel induced semiconductor single devices with operating characteristics similar to multiple device CMOS systems are also presented.

  19. Improvement in the Photocurrent of Inverted Organic Solar Cells Using MoO(x)-Doped TAPC as a P-Type Optical Spacer.

    Science.gov (United States)

    Song, Jiyun; Song, Hyung-Jun; Kim, Jun Young; Lee, Yeonkyung; Park, Myeongjin; Kwon, Yongwon; Ko, Youngjun; Lee, Changhee

    2016-05-01

    In this work, we demonstrate enhancement in the short-circuit current of inverted organic photovoltaic cells (OPVs) using a p-type optical spacer. The p-type optical spacer, which consists of molybdenum oxide (MoO(x))-doped 1,1-bis[(di-4-tolylamino)phenyl]cyclohexane (TAPC), shows improved transmittance at visible light with high electrical conductivity. The electrical field distribution of incident light at the active layer of OPVs can be controlled by tuning the thickness of the optical spacer in the OPVs. Specifically, the incorporation of the 20-nm optical spacer layer in the OPV leads to enhanced spectral response of the device in the wavelength range of 400-600 nm, which is consistent with the combined results of improved optical absorption and better charge transport characteristics. As a result, the OPV with a 20-nm p-type optical spacer shows improvement in the short-circuit current compared with a device with 10 nm of embedded MoO(x).

  20. Electronic characteristics of p-type transparent SnO monolayer with high carrier mobility

    Science.gov (United States)

    Du, Juan; Xia, Congxin; Liu, Yaming; Li, Xueping; Peng, Yuting; Wei, Shuyi

    2017-04-01

    More recently, two-dimensional (2D) SnO nanosheets are attaching great attention due to its excellent carrier mobility and transparent characteristics. Here, the stability, electronic structures and carrier mobility of SnO monolayer are investigated by using first-principles calculations. The calculations of the phonon dispersion spectra indicate that SnO monolayer is dynamically stable. Moreover, the band gap values are decreased from 3.93 eV to 2.75 eV when the tensile strain is applied from 0% to 12%. Interestingly, SnO monolayer is a p-type transparent semiconducting oxide with hole mobility of 641 cm2 V-1 s-1, which is much higher than that of MoS2 monolayer. These findings make SnO monolayer becomes a promising 2D material for applications in nanoelectronic devices.

  1. Characterization and Stability of Na-doped p-type ZnO Thin Films Preparation by Reactive DC Magnetron Sputtering

    Institute of Scientific and Technical Information of China (English)

    JI Zhen-guo; LIU Fang; HE Hai-yan; HAN Wei-zhi

    2009-01-01

    Na-doped p-type ZnO thin films have been realized by DC reactive magnetron sputtering with a set of metal-Zn targets doped with various Na contents and under different substrate temperatures,respectively.Hall effect measurement,field-emission SEM,X-ray diffraction and optical transmission were carried out to investigate the effects of Na content and substrate temperature on the properties of p-type films. Results indicate that all the Na-doped ZnO films are strongly (002) oriented,and have an average transmittance ~85% in the visible region.Na-doped p-type ZnO films with good structural,electrical,and optical properties can only be obtained at an intermediate amount of Na content and under appropriate substrate temperature.At the optimal condition,the Na-doped p-type ZnO has the lowest resistivity of 13.8Ω· cm with the carrier concentration as high as 1.07×10~(18) cm~(-3).The stability of the Na-doped p-type ZnO is also studied in this paper and it is found that the electrical properties keep stable in a period of one month.

  2. Origin of p-type conductivity of Sb-doped ZnO nanorods and the local structure around Sb ions

    Energy Technology Data Exchange (ETDEWEB)

    Liang, J. K.; Su, H. L., E-mail: suhlnju@hotmail.com, E-mail: ycwu@hfut.edu.cn, E-mail: jcahuang@mail.ncku.edu.tw; Wu, Y. C., E-mail: suhlnju@hotmail.com, E-mail: ycwu@hfut.edu.cn, E-mail: jcahuang@mail.ncku.edu.tw [School of Materials Science and Engineering and Anhui Provincial Key Laboratory of Advanced Functional Materials and Devices, Hefei University of Technology, Hefei 230009, Anhui (China); Chuang, P. Y.; Kuo, C. L.; Huang, S. Y. [Department of Physics, National Cheng Kung University, Tainan 701, Taiwan (China); Chan, T. S. [National Synchrotron Radiation Research Center, Hsinchu 300, Taiwan (China); Huang, J. C. A., E-mail: suhlnju@hotmail.com, E-mail: ycwu@hfut.edu.cn, E-mail: jcahuang@mail.ncku.edu.tw [Department of Physics, National Cheng Kung University, Tainan 701, Taiwan (China); Advanced Optoelectronic Technology Center and Center for Micro/Nano Science and Technology, National Cheng Kung University, Tainan 701, Taiwan (China); Taiwan Consortium of Emergent Crystalline Materials, Ministry of Science and Technology, Taipei 106, Taiwan (China)

    2015-05-25

    To probe the origin of p-type conductivity in Sb-doped ZnO, a careful and detailed synchrotron radiation study was performed. The extended X-ray absorption fine structure and X-ray photoelectron spectroscopy investigations provided the evidence for the formation of the complex defects comprising substitution Sb ions at Zn sites (Sb{sub Zn}) and Zn vacancies within the Sb-doped ZnO lattice. Such complex defects result in the increases of Sb-O coordination number and the Sb valence and thereby lead to the p-type conductivity of Sb-doped ZnO. The back-gate field-effect-transistors based on single nanorod of Sb-doped ZnO were constructed, and the stable p-type conduction behavior was confirmed.

  3. Electronic structure of p type Delta doped systems; Estructura electronica de sistemas dopadas con Delta de tipo p

    Energy Technology Data Exchange (ETDEWEB)

    Gaggero S, L.M.; Perez A, R. [Departamento de Fisica de los Materiales, Universidad Nacional de Educacion a Distancia, Senda del Rey s/n, 28040 Madrid (Spain)

    1998-12-31

    We summarize of the results obtained for the electronic structure of quantum wells that consist in an atomic layer doped with impurities of p type. The calculations are made within the frame worth of the wrapper function approach to independent bands and with potentials of Hartree. We study the cases reported experimentally (Be in GaAs and B in Si). We present the levels of energy, the wave functions and the rate of the electronic population between the different subbands, as well as the dependence of these magnitudes with the density of impurities in the layer. The participation of the bans of heavy holes is analysed, light and split-off band in the total electronic population. The effect of the temperature is discussed and we give a possible qualitative explanation of the experimental optical properties. (Author)

  4. P-type poly-Si prepared by low-temperature aluminum-induced crystallization and doping for solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Matsumoto, Yasuhiro; Yu, Zhenrui; Morales-Acevedo, Arturo [CINVESTAV-IPN, Mexico, D.F. (Mexico)

    2000-07-01

    P-type poly-Si thin films prepared by low temperature aluminum-induced crystallization and doping are reported. The starting material was boron-doped a-Si:H prepared by PECVD on glass substrates. Aluminum layers with different thickness were evaporated on a-Si:H surface and conventional thermal annealing was performed at temperatures ranging from 300 to 550 Celsius degrees. XRD, SIMS, and Hall effect measurements were carried out to characterize the annealed Al could be crystallized at temperature as low as 300 Celsius degrees in 60 minutes. This material has high carrier concentration as well as high Hall mobility and can be used as a p-layer of seed layer for thin film poly-Si solar cells. The technique reported here is compatible with PECVD process. [Spanish] Se informa sobre la preparacion de peliculas delgadas tipo P y Poli-Si mediante la cristalizacion inducida de aluminio a baja temperatura y el dopado. El material inicial era de boro dopado y a-Si:H preparado PECVD sobre substratos de vidrio. Se evaporaron capas de aluminio de diferente espesor sobre una superficie de a-Si:H y se llevo a cabo un destemplado termico convencional a temperaturas que varian entre 300 y 500 grados Celsius. Se llevaron a cabo mediciones de XRB, SIMS y del efecto Hall para caracterizar el aluminio destemplado para que pudiera ser cristalizado a temperaturas tan bajas como 300 grados Celsius en 60 minutos. Este material tiene una alta concentracion portadora asi como una alta movilidad Hall y puede usarse como una capa de semilla para celdas solares de pelicula delgada Poli-Si. La tecnica reportada aqui es compatible con el proceso PECVD.

  5. Enhancement of the thermoelectric performance of p-type layered oxide Ca3Co4O9+ through heavy doping and metallic nanoinclusions

    DEFF Research Database (Denmark)

    Van Nong, Ngo; Pryds, Nini; Linderoth, Søren

    2011-01-01

    An effective way to improve the thermoelectric performance (ZT) of layered structured oxide materials by carefully choosing heavy ion doping and introducing metallic nanoinclusions is proposed. A p-type oxide material with remarkable highly improved ZT is successfully fabricated using this approach...

  6. Effect of oxygen and ozone on p-type doping of ultra-thin WSe2 and MoSe2 field effect transistors.

    Science.gov (United States)

    Wang, Shunfeng; Zhao, Weijie; Giustiniano, Francesco; Eda, Goki

    2016-02-14

    We report on the p-type doping effect of oxygen and ozone molecules on mono- and few-layer WSe2 and MoSe2 field effect transistors. We show that adsorption of oxygen and ozone under ambient conditions results in subtantial doping and corresponding enhancement in the hole conductivity of the devices. Ozone-induced doping is found to be rapid and efficient, saturating within minutes of exposure whereas oxygen-induced doping occurs over a period of days to reach the equivalent level of doping. Our observations reveal that the water adlayer on the material surface plays a crucial role in solubilizing oxygen and ozone and in forming a redox couple with a large chemical potential.

  7. Influence of chemically p-type doped active organic semiconductor on the film thickness versus performance trend in cyanine/C60 bilayer solar cells

    Science.gov (United States)

    Jenatsch, Sandra; Geiger, Thomas; Heier, Jakob; Kirsch, Christoph; Nüesch, Frank; Paracchino, Adriana; Rentsch, Daniel; Ruhstaller, Beat; C Véron, Anna; Hany, Roland

    2015-01-01

    Simple bilayer organic solar cells rely on very thin coated films that allow for effective light absorption and charge carrier transport away from the heterojunction at the same time. However, thin films are difficult to coat on rough substrates or over large areas, resulting in adverse shorting and low device fabrication yield. Chemical p-type doping of organic semiconductors can reduce Ohmic losses in thicker transport layers through increased conductivity. By using a Co(III) complex as chemical dopant, we studied doped cyanine dye/C60 bilayer solar cell performance for increasing dye film thickness. For films thicker than 50 nm, doping increased the power conversion efficiency by more than 30%. At the same time, the yield of working cells increased to 80%. We addressed the fate of the doped cyanine dye, and found no influence of doping on solar cell long term stability. PMID:27877804

  8. Influence of chemically p-type doped active organic semiconductor on the film thickness versus performance trend in cyanine/C60 bilayer solar cells.

    Science.gov (United States)

    Jenatsch, Sandra; Geiger, Thomas; Heier, Jakob; Kirsch, Christoph; Nüesch, Frank; Paracchino, Adriana; Rentsch, Daniel; Ruhstaller, Beat; C Véron, Anna; Hany, Roland

    2015-06-01

    Simple bilayer organic solar cells rely on very thin coated films that allow for effective light absorption and charge carrier transport away from the heterojunction at the same time. However, thin films are difficult to coat on rough substrates or over large areas, resulting in adverse shorting and low device fabrication yield. Chemical p-type doping of organic semiconductors can reduce Ohmic losses in thicker transport layers through increased conductivity. By using a Co(III) complex as chemical dopant, we studied doped cyanine dye/C60 bilayer solar cell performance for increasing dye film thickness. For films thicker than 50 nm, doping increased the power conversion efficiency by more than 30%. At the same time, the yield of working cells increased to 80%. We addressed the fate of the doped cyanine dye, and found no influence of doping on solar cell long term stability.

  9. Gas doping ratio effects on p-type hydrogenated nanocrystalline silicon thin films grown by hot-wire chemical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Luo, P.Q. [Solar Energy Institute, Department of Physics, Shanghai Jiao Tong University, 800 Dongchuan Road, Shanghai 200240 (China)], E-mail: robt@sjtu.edu.cn; Zhou, Z.B. [Solar Energy Institute, Department of Physics, Shanghai Jiao Tong University, 800 Dongchuan Road, Shanghai 200240 (China)], E-mail: zbzhou@sjtu.edu.cn; Chan, K.Y. [Thin Film Laboratory, Faculty of Engineering, Multimedia University, Jalan Multimedia, Cyberjaya 63100, Selangor (Malaysia); Tang, D.Y.; Cui, R.Q.; Dou, X.M. [Solar Energy Institute, Department of Physics, Shanghai Jiao Tong University, 800 Dongchuan Road, Shanghai 200240 (China)

    2008-12-30

    Hydrogenated nanocrystalline silicon (nc-Si:H) grown by hot-wire chemical vapor deposition (HWCVD) has recently drawn significant attention in the area of thin-film large area optoelectronics due to possibility of high deposition rate. We report on the effects of diborane (B{sub 2}H{sub 6}) doping ratio on the microstructural and optoelectrical properties of the p-type nc-Si:H thin films grown by HWCVD at low substrate temperature of 200 deg. C and with high hydrogen dilution ratio of 98.8%. An attempt has been made to elucidate the boron doping mechanism of the p-type nc-Si:H thin films deposited by HWCVD and the correlation between the B{sub 2}H{sub 6} doping ratio, crystalline volume fraction, optical band gap and dark conductivity.

  10. A Win-Win Effect for Both the Ferromagnetism and the Dopability of p-Type Doping in ZnO:(Cu+N)

    Science.gov (United States)

    Wei, Ling; Zhang, Wei-Feng

    2013-08-01

    We investigate the electronic structures and magnetic properties of ZnO doped with N, Cu, and (Cu+N) by using a first principles method and considering the strong correlation effect. It is interesting to compare these three systems. ZnO:N has weak p-type doping and unstable ferromagnetism, while ZnO:Cu becomes insulating due to the Jahn—Teller effect. Cu and N codoping can not only greatly improve the dopability of p-type doping accompanying the Jahn—Teller fading, but also enhance the ferromagnetism at the same time. The calculation results indicate that there is a win-win effect between N and Cu dopants in the ZnO:(Cu+N) system, which could possibly find applications in spintronics besides optoelectronics.

  11. Deposition of Na–N dual acceptor doped p-type ZnO thin films and fabrication of p-ZnO:(Na, N)/n-ZnO:Eu homojunction

    Energy Technology Data Exchange (ETDEWEB)

    Swapna, R., E-mail: swapna.ramella@yahoo.com; Santhosh Kumar, M.C., E-mail: santhoshmc@nitt.edu

    2013-09-20

    Highlights: • Low resistive and stable p-type ZnO films are fabricated by dual acceptor-doping. • The fabricated p-ZnO:(Na, N)/n-ZnO:Eu homojunction is characterized and discussed. • The fabricated ZnO homojunction shows good rectifying characteristics. • The fabricated ZnO homojunction is suitable for optoelectronic devices. -- Abstract: Sodium and nitrogen dual acceptor doped p-type ZnO (ZnO:(Na, N)) films have been prepared by spray pyrolysis technique at a substrate temperature of 623 K. The ZnO:(Na, N) films are grown at a fixed N doping concentration of 2 at.% and varying the nominal Na doping concentration from 0 to 8 at.%. The XRD results show that all the ZnO:(Na, N) films exhibited (0 0 2) preferential orientation. The EDX and elemental mapping analysis shows the presence and distribution of Zn, O, Na and N in the deposited films. The Hall measurement results demonstrate that the Na–N dual acceptor doped ZnO films show excellent p-type conduction. The p-type ZnO:(Na, N) films with comparatively low resistivity of 5.60 × 10{sup −2} Ω cm and relatively high carrier concentration of 3.15 × 10{sup 18} cm{sup −3} are obtained at 6 at.%. ZnO based homojunction is fabricated by depositing n-type layer (Eu doped ZnO) grown over the p-type layer ZnO:(Na, N). The current–voltage (I–V) characteristics measured from the two-layer structure show typical rectifying characteristics of p-n junction with a low turn on voltage of about 1.69 V. The ZnO:(Na, N) films exhibit a high transmittance (about >90%) and the average reflectance is 8.9% in the visible region. PL measurement shows near-band-edge (NBE) emission and deep-level (DL) emission in the ZnO:(Na, N) thin films.

  12. Enhanced p-type conductivity and band gap narrowing in heavily Al doped NiO thin films deposited by RF magnetron sputtering.

    Science.gov (United States)

    Nandy, S; Maiti, U N; Ghosh, C K; Chattopadhyay, K K

    2009-03-18

    Stoichiometric NiO, a Mott-Hubbard insulator at room temperature, shows p-type electrical conduction due to the introduction of Ni(2+) vacancies (V(Ni)('')) and self-doping of Ni(3+) ions in the presence of excess oxygen. The electrical conductivity of this important material is low and not sufficient for active device fabrication. Al doped NiO thin films were synthesized by radio frequency (RF) magnetron sputtering on glass substrates at a substrate temperature of 250 °C in an oxygen + argon atmosphere in order to enhance the p-type electrical conductivity. X-ray diffraction studies confirmed the correct phase formation and also oriented growth of NiO thin films. Al doping was confirmed by x-ray photoelectron spectroscopic studies. The structural, electrical and optical properties of the films were investigated as a function of Al doping (0-4 wt%) in the target. The room temperature electrical conductivity increased from 0.01-0.32 S cm (-1) for 0-4% Al doping. With increasing Al doping, above the Mott critical carrier density, energy band gap shrinkage was observed. This was explained by the shift of the band edges due to the existence of exchange and correlation energies amongst the electron-electron and hole-hole systems and also by the interaction between the impurity quasi-particle system.

  13. Studies of arsenic incorporation and P-type doping in epitaxial mercury cadmium telluride thin films grown by molecular beam epitaxy

    Science.gov (United States)

    Zandian, Majid

    Doped layer semiconductor structures provide possibilities for novel electronic devices. Growth of Hg1-xCdxTe by molecular beam epitaxy (MBE) allows precise control over the doping profile and position of heterojunctions as well as structural properties of this ternary alloy. Even though n-type doping using indium is well established, little is known about p-type doping in this material system by MBE. Several elements such as Ag, Au, Sb, Bi and P have been previously used, however high diffusion coefficient and amphoteric behavior of these atoms in HgCdTe has restricted their use in heterojunction devices where control over doping profiles and concentrations is needed. We investigated arsenic incorporation efficiency as a function of As 4 flux and growth temperature. The sticking coefficient of As is substantially higher at lower growth temperature compared to growth at 190°C. For samples grown at 170°C, the etch pit density (EPD) is higher compared to p-type As doped samples grown at 190°C. Higher EPD is associated with columnar twin defects observed in transmission electron microscopy (TEM) studies of low growth temperature samples. Growth at low temperature of 170°C causes Hg rich condition promoting twin formation. Therefore, growth of p-type layers doped with As at low temperatures require optimization of II/VI flux ratio to eliminate columnar twin defects. It is possible to incorporate As at normal MBE growth temperature of 190°C but very high flux of As has to used to overcome low sticking coefficient of As at these temperatures. We proposed a mechanism for the activation of As involving Hg vacancies (VHg··) where Te is moved to a Hg vacancy, leaving behind a Te vacancy, which is then filled by an As atom. The Te that is now on a Hg site (i.e., Te antisite) migrates to the surface and leaves the crystal.

  14. Hot-wire chemical vapor deposition prepared aluminum doped p-type microcrystalline silicon carbide window layers for thin film silicon solar cells

    Science.gov (United States)

    Chen, Tao; Köhler, Florian; Heidt, Anna; Carius, Reinhard; Finger, Friedhelm

    2014-01-01

    Al-doped p-type microcrystalline silicon carbide (µc-SiC:H) thin films were deposited by hot-wire chemical vapor deposition at substrate temperatures below 400 °C. Monomethylsilane (MMS) highly diluted in hydrogen was used as the SiC source in favor of SiC deposition in a stoichiometric form. Aluminum (Al) introduced from trimethylaluminum (TMAl) was used as the p-type dopant. The material property of Al-doped p-type µc-SiC:H thin films deposited with different deposition pressure and filament temperature was investigated in this work. Such µc-SiC:H material is of mainly cubic (3C) SiC polytype. For certain conditions, like high deposition pressure and high filament temperature, additional hexagonal phase and/or stacking faults can be observed. P-type µc-SiC:H thin films with optical band gap E04 ranging from 2.0 to 2.8 eV and dark conductivity ranging from 10-5 to 0.1 S/cm can be prepared. Such transparent and conductive p-type µc-SiC:H thin films were applied in thin film silicon solar cells as the window layer, resulting in an improved quantum efficiency at wavelengths below 480 nm.

  15. Fe-Doping Effect on Thermoelectric Properties of p-Type Bi0.48Sb1.52Te3

    Directory of Open Access Journals (Sweden)

    Hyeona Mun

    2015-03-01

    Full Text Available The substitutional doping approach has been shown to be an effective strategy to improve ZT of Bi2Te3-based thermoelectric raw materials. We herein report the Fe-doping effects on electronic and thermal transport properties of polycrystalline bulks of p-type Bi0.48Sb1.52Te3. After a small amount of Fe-doping on Bi/Sb-sites, the power factor could be enhanced due to the optimization of carrier concentration. Additionally, lattice thermal conductivity was reduced by the intensified point-defect phonon scattering originating from the mass difference between the host atoms (Bi/Sb and dopants (Fe. An enhanced ZT of 1.09 at 300 K was obtained in 1.0 at% Fe-doped Bi0.48Sb1.52Te3 by these synergetic effects.

  16. Optical characteristics of p-type GaAs-based semiconductors towards applications in photoemission infrared detectors

    Science.gov (United States)

    Lao, Y. F.; Perera, A. G. U.; Wang, H. L.; Zhao, J. H.; Jin, Y. J.; Zhang, D. H.

    2016-03-01

    Free-carrier effects in a p-type semiconductor including the intra-valence-band and inter-valence-band optical transitions are primarily responsible for its optical characteristics in infrared. Attention has been paid to the inter-valence-band transitions for the development of internal photoemission (IPE) mid-wave infrared (MWIR) photodetectors. The hole transition from the heavy-hole (HH) band to the spin-orbit split-off (SO) band has demonstrated potential applications for 3-5 μm detection without the need of cooling. However, the forbidden SO-HH transition at the Γ point (corresponding to a transition energy Δ0, which is the split-off gap between the HH and SO bands) creates a sharp drop around 3.6 μm in the spectral response of p-type GaAs/AlGaAs detectors. Here, we report a study on the optical characteristics of p-type GaAs-based semiconductors, including compressively strained InGaAs and GaAsSb, and a dilute magnetic semiconductor, GaMnAs. A model-independent fitting algorithm was used to derive the dielectric function from experimental reflection and transmission spectra. Results show that distinct absorption dip at Δ0 is observable in p-type InGaAs and GaAsSb, while GaMnAs displays enhanced absorption without degradation around Δ0. This implies the promise of using GaMnAs to develop MWIR IPE detectors. Discussions on the optical characteristics correlating with the valence-band structure and free-hole effects are presented.

  17. The low resistive and transparent Al-doped SnO{sub 2} films: p-type conductivity, nanostructures and photoluminescence

    Energy Technology Data Exchange (ETDEWEB)

    Benouis, C.E. [Department of Material Technology, Physics Faculty, USTOMB University, BP1505 Oran (Algeria); Benhaliliba, M., E-mail: mbenhaliliba@gmail.com [Department of Material Technology, Physics Faculty, USTOMB University, BP1505 Oran (Algeria); Mouffak, Z. [Department of Electrical and Computer Engineering California State University, Fresno, CA (United States); Avila-Garcia, A. [Cinvestav-IPN, Dept. Ingeniería Eléctrica-SEES, Apdo. Postal 14-740, 07000 México, D.F. (Mexico); Tiburcio-Silver, A. [ITT-DIE, Apdo, Postal 20, Metepec 3, 52176 Estado de Mexico (Mexico); Ortega Lopez, M.; Romano Trujillo, R. [Centro de Investigación en Dispositivos Semiconductores, Instituto de Ciencias-BUAP, 14 Sur y Av. San Claudio, C.U. Puebla, Pue. (Mexico); Ocak, Y.S. [Dicle University, Education Faculty, Science Department, 21280 Diyarbakir (Turkey)

    2014-08-01

    Highlights: • Low resistive and high transparency Al doped SnO{sub 2} films. • Films are deposited onto ITO substrate by spray pyrolysis. • Nanostructured films are revealed. • p-Type conductivity is exhibited. • Photoluminescence of films is studied. - Abstract: In this work, we study the crystalline structure, surface morphology, transmittance, optical bandgap and n/p type inversion of tin oxide (SnO{sub 2}). The Nanostructured films of Al-doped SnO{sub 2} were successfully produced onto ITO-coated glass substrates via the spray pyrolysis method at a deposition temperature of 300 °C. A (1 0 1) and (2 1 1)-oriented tetragonal crystal structure was confirmed by X-ray patterns; and grain sizes varied within the range 8−42 nm. The films were polycrystalline, showing a high transparency in the visible (VIS) and infrared (IR) spectra. The optical bandgap was estimated to be around 3.4 eV. The atomic force microscopy (AFM) analysis showed the nanostructures consisting of nanotips, nanopatches, nanopits and nanobubbles. The samples exhibited high conductivity that ranged from 0.55 to 10{sup 4} (S/cm) at ambient and showed an inversion from n to p-type as well as a degenerate semiconductor characters with a bulk concentration reaching 1.7 x 10{sup 19} cm{sup −3}. The photoluminescence measurements reveal the detection of violet, green and yellow emissions.

  18. Reactive ion etching (RIE) induced p- to n-type conversion in extrinsically doped p-type HgCdTe

    Energy Technology Data Exchange (ETDEWEB)

    Musca, C.A.; Smith, E.P.G.; Siliquini, J.F.; Dell, J.M.; Antoszewski, J.; Faraone, L. [Univ. of Western Australia, Nedlands, Western Australia (Australia). Dept. of Electrical and Electronic Engineering; Piotrowski, J. [Vigo System Ltd., Warsaw (Poland)

    1998-12-31

    Mercury annealing of reactive ion etching (RIE) induced p- to n-type conversion in extrinsically doped p-type epitaxial layers of HgCdTe (x = 0.31) has been used to reconvert n-type conversion sustained during RIE processing. For the RIE processing conditions used (400 mT, CH{sub 4}/H{sub 2}, 90 W) p- to n-type conversion was observed using laser beam induced current (LBIC) measurements. After a sealed tube mercury anneal at 200 C for 17 hours, LBIC measurements clearly indicated no n-type converted region remained. Subsequent Hall measurements confirmed that the material consisted of a p-type layer, with electrical properties equivalent to that of the initial as-grown wafer (N{sub A}-N{sub D} = 2 {times} 10{sup 16} cm{sup {minus}3}, {mu} = 350 cm{sup 2}.V{sup {minus}1}.s{sup {minus}1}).

  19. Iron-boron pairing kinetics in illuminated p-type and in boron/phosphorus co-doped n-type silicon

    Energy Technology Data Exchange (ETDEWEB)

    Möller, Christian, E-mail: cmoeller@cismst.de [CiS Forschungsinstitut für Mikrosensorik und Photovoltaik GmbH, Konrad-Zuse-Str. 14, 99099 Erfurt (Germany); TU Ilmenau, Institut für Physik, Weimarer Str. 32, 98693 Ilmenau (Germany); Bartel, Til; Gibaja, Fabien [Calisolar GmbH, Magnusstraße 11, 12489 Berlin (Germany); Lauer, Kevin [CiS Forschungsinstitut für Mikrosensorik und Photovoltaik GmbH, Konrad-Zuse-Str. 14, 99099 Erfurt (Germany)

    2014-07-14

    Iron-boron (FeB) pairing is observed in the n-type region of a boron and phosphorus co-doped silicon sample which is unexpected from the FeB pair model of Kimerling and Benton. To explain the experimental data, the existing FeB pair model is extended by taking into account the electronic capture and emission rates at the interstitial iron (Fe{sub i}) trap level as a function of the charge carrier densities. According to this model, the charge state of the Fe{sub i} may be charged in n-type making FeB association possible. Further, FeB pair formation during illumination in p-type silicon is investigated. This permits the determination of the charge carrier density dependent FeB dissociation rate and in consequence allows to determine the acceptor concentration in the co-doped n-type silicon by lifetime measurement.

  20. 氧化锌材料p型掺杂研究进展%Recent Research on p-type Doping of ZnO

    Institute of Scientific and Technical Information of China (English)

    谭蜜; 张红; 李万俊; 秦国平; 阮海波; 孔春阳

    2016-01-01

    氧化锌(ZnO)是 II-VI 族直接带隙化合物半导体材料,室温下禁带宽度为3.37 eV,激子束缚能高达60 meV,是制造蓝紫外发光、探测以及激光器件的理想材料。高质量 n 型和 p 型 ZnO 以及同质 p-n 结的制备是实现器件化的关键。目前,n 型 ZnO 的制备技术已趋于成熟,但高质量稳定的 p 型 ZnO 的缺乏已成为制约其器件化的瓶颈。在过去的十余年里,通过国内外科研工作者的不懈努力,在理论和实验上都取得了显著的成果。本文主要概述了 ZnO 材料的 p 型掺杂、p 型导电机制以及 p-ZnO 基光电器件的研究进展,同时初步探索了 ZnO 材料 p 型导电稳定性问题。%Zinc oxide (ZnO),a typical direct wide bandgap (3.37 eV)semiconductor,has attracted an increasing interest tothe optoelectronics field.Its large exciton binding energy of 60 meV endows it with high radiative recom-bination efficiency,a unique advantage in light emitting and lasing devices.The fabrications of high quality n-and p-type ZnO as well as p-n junction are the key steps to realize these applications.although the techniques of fabri-cated n-type ZnO has been well developed,the reliable p type doping of the material remains a major challenge to optoelectronic applications,despitethe fact that p-doping of ZnO has been improved and that marked results in ex-periment and theory have been achieved during the past ten years.In this review,we examined the recent research progress in p-type doping of ZnO,including the p-type performance,the mechanism of p-type conduction,and p-ZnO based photoelectric devices,and so on.Moreover,based on the challenges of the current researches,we sum-marized the factors that may affect the p-type doping,especially the stability of p-type ZnO materials.

  1. Atomic Layer Deposition of p-Type Epitaxial Thin Films of Undoped and N-Doped Anatase TiO2.

    Science.gov (United States)

    Vasu, K; Sreedhara, M B; Ghatak, J; Rao, C N R

    2016-03-01

    Employing atomic layer deposition, we have grown p-type epitaxial undoped and N-doped anatase TiO2(001) thin films on c-axis Al2O3 substrate. From X-ray diffraction and transmission electron microscopy studies, crystallographic relationships between the film and the substrate are found to be (001)TiO2//(0001)Al2O3 and [1̅10]TiO2//[011̅0]Al2O3. N-doping in TiO2 thin films enhances the hole concentration and mobility. The optical band gap of anatase TiO2 (3.23 eV) decreases to 3.07 eV upon N-doping. The epitaxial films exhibit room-temperature ferromagnetism and photoresponse. A TiO2-based homojunction diode was fabricated with rectification from the p-n junction formed between N-doped p-TiO2 and n-TiO2.

  2. Calibration on wide-ranging aluminum doping concentrations by photoluminescence in high-quality uncompensated p-type 4H-SiC

    Science.gov (United States)

    Asada, Satoshi; Kimoto, Tsunenobu; Ivanov, Ivan G.

    2017-08-01

    Previous work has shown that the concentration of shallow dopants in a semiconductor can be estimated from the photoluminescence (PL) spectrum by comparing the intensity of the bound-to-the-dopant exciton emission to that of the free exciton. In this work, we study the low-temperature PL of high-quality uncompensated Al-doped p-type 4H-SiC and propose algorithms for determining the Al-doping concentration using the ratio of the Al-bound to free-exciton emission. We use three different cryogenic temperatures (2, 41, and 79 K) in order to cover the Al-doping range from mid 1014 cm-3 up to 1018 cm-3. The Al-bound exciton no-phonon lines and the strongest free-exciton replica are used as a measure of the bound- and free-exciton emissions at a given temperature, and clear linear relationships are obtained between their ratio and the Al-concentration at 2, 41, and 79 K. Since nitrogen is a common unintentional donor dopant in SiC, we also discuss the criteria allowing one to determine from the PL spectra whether a sample can be considered as uncompensated or not. Thus, the low-temperature PL provides a convenient non-destructive tool for the evaluation of the Al concentration in 4H-SiC, which probes the concentration locally and, therefore, can also be used for mapping the doping homogeneity.

  3. Spectroscopic characterization of a single dangling bond on a bare Si(100)- c ( 4 × 2 ) surface for n - and p -type doping

    KAUST Repository

    Mantega, M.

    2012-07-19

    We investigate the charging state of an isolated single dangling bond formed on an unpassivated Si(100) surface with c(4×2) reconstruction, by comparing scanning tunneling microscopy and spectroscopy analysis with density functional theory calculations. The dangling bond is created by placing a single hydrogen atom on the bare surface with the tip of a scanning tunneling microscope. The H atom passivates one of the dimer dangling bonds responsible for the surface one-dimensional electronic structure. This leaves a second dangling at the reacted surface dimer which breaks the surface periodicity. We consider two possible H adsorption configurations for both the neutral and the doped situation (n- and p-type). In the case of n-doping we find that the single dangling bond state is doubly occupied and the most stable configuration is that with H bonded to the bottom Si atom of the surface dimer. In the case of p-doping the dangling bond is instead empty and the configuration with the H attached to the top atom of the dimer is the most stable. Importantly the two configurations have different scattering properties and phase shift fingerprints. This might open up interesting perspectives for fabricating a switching device by tuning the doping level or by locally charging the single dangling bond state. © 2012 American Physical Society.

  4. Water- and humidity-enhanced UV detector by using p-type La-doped ZnO nanowires on flexible polyimide substrate.

    Science.gov (United States)

    Hsu, Cheng-Liang; Li, Hsieh-Heng; Hsueh, Ting-Jen

    2013-11-13

    High-density La-doped ZnO nanowires (NWs) were grown hydrothermally on flexible polyimide substrate. The length and diameter of the NWs were around 860 nm and 80-160 nm, respectively. All XRD peaks of the La-doped sample shift to a larger angle. The strong PL peak of the La-doped sample is 380 nm, which is close to the 3.3 eV ZnO bandgap. That PL dominated indicates that the La-doped sample has a great amount of oxygen vacancies. The lattice constants ~0.514 nm of the ZnO:La NW were smaller when measured by HR-TEM. The EDX spectrum determined that the La-doped sample contains approximately 1.27 at % La. The La-doped sample was found to be p-type by Hall Effect measurement. The dark current of the p-ZnO:La NWs decreased with increased relative humidity (RH), while the photocurrent of the p-ZnO:La nanowires increased with increased RH. The higher RH environment was improved that UV response performance. Based on the highest 98% RH, the photocurrent/dark current ratio was around 47.73. The UV response of water drops on the p-ZnO:La NWs was around 2 orders compared to 40% RH. In a water environment, the photocurrent/dark current ratio of p-ZnO:La NWs was 212.1, which is the maximum UV response.

  5. Rhodium-doped barium titanate perovskite as a stable p-type semiconductor photocatalyst for hydrogen evolution under visible light.

    Science.gov (United States)

    Maeda, Kazuhiko

    2014-02-12

    Rhodium-doped barium titanate (BaTiO3:Rh) powder was prepared by the polymerized complex (PC) method, and the photocatalytic activity for H2 evolution from water was examined. BaTiO3 is a wide-gap n-type semiconductor having a band gap of 3.0 eV. Doping Rh species into the lattice of BaTiO3 resulted in the formation of new absorption bands in visible light region. Upon visible light (λ > 420 nm), BaTiO3:Rh modified with nanoparticulate Pt as a water reduction promoter was capable of producing H2 from water containing an electron donor such as methanol and iodide. The best material prepared by the PC method exhibited higher activity than that made by a conventional solid-state reaction method. Visible-light-driven Z-scheme water splitting was also accomplished using Pt/BaTiO3:Rh as a building block for H2 evolution in combination with PtOx-loaded WO3 as an O2 evolution photocatalyst in the presence of an IO3(-)/I(-) shuttle redox mediator. Photoelectrochemical analysis indicated that a porous BaTiO3:Rh electrode exhibited cathodic photoresponse due to water reduction in a neutral aqueous Na2SO4 solution upon visible light.

  6. Effect of Substitutional Pb Doping on Bipolar and Lattice Thermal Conductivity in p-Type Bi0.48Sb1.52Te3

    Directory of Open Access Journals (Sweden)

    Hyun-sik Kim

    2017-07-01

    Full Text Available Cation substitutional doping is an effective approach to modifying the electronic and thermal transports in Bi2Te3-based thermoelectric alloys. Here we present a comprehensive analysis of the electrical and thermal conductivities of polycrystalline Pb-doped p-type bulk Bi0.48Sb1.52Te3. Pb doping significantly increased the electrical conductivity up to ~2700 S/cm at x = 0.02 in Bi0.48-xPbxSb1.52Te3 due to the increase in hole carrier concentration. Even though the total thermal conductivity increased as Pb was added, due to the increased hole carrier concentration, the thermal conductivity was reduced by 14–22% if the contribution of the increased hole carrier concentration was excluded. To further understand the origin of reduction in the thermal conductivity, we first estimated the contribution of bipolar conduction to thermal conductivity from a two-parabolic band model, which is an extension of the single parabolic band model. Thereafter, the contribution of additional point defect scattering caused by Pb substitution (Pb in the cation site was analyzed using the Debye–Callaway model. We found that Pb doping significantly suppressed both the bipolar thermal conduction and lattice thermal conductivity simultaneously, while the bipolar contribution to the total thermal conductivity reduction increased at high temperatures. At Pb doping of x = 0.02, the bipolar thermal conductivity decreased by ~30% from 0.47 W/mK to 0.33 W/mK at 480 K, which accounts for 70% of the total reduction.

  7. Contrasting the Role of Mg and Ba Doping on the Microstructure and Thermoelectric Properties of p-Type AgSbSe2.

    Science.gov (United States)

    Liu, Zihang; Shuai, Jing; Geng, Huiyuan; Mao, Jun; Feng, Yan; Zhao, Xu; Meng, Xianfu; He, Ran; Cai, Wei; Sui, Jiehe

    2015-10-21

    Microstructure has a critical influence on the mechanical and functional properties. For thermoelectric materials, deep understanding of the relationship of microstructure and thermoelectric properties will enable the rational optimization of the ZT value and efficiency. Herein, taking AgSbSe2 as an example, we first report a different role of alkaline-earth metal ions (Mg(2+) and Ba(2+)) doping in the microstructure and thermoelectric properties of p-type AgSbSe2. For Mg doping, it monotonously increases the carrier concentration and then reduces the electrical resistivity, leading to a substantially enhanced power factor in comparison to those of other dopant elements (Bi(3+), Pb(2+), Zn(2+), Na(+), and Cd(2+)) in the AgSbSe2 system. Meanwhile, the lattice thermal conductivity is gradually suppressed by point defects scattering. In contrast, the electrical resistivity first decreases and then slightly rises with the increased Ba-doping concentrations due to the presence of BaSe3 nanoprecipitates, exhibiting a different variation tendency compared with the corresponding Mg-doped samples. More significantly, the total thermal conductivity is obviously reduced with the increased Ba-doping concentrations partially because of the strong scattering of medium and long wavelength phonons via the nanoprecipitates, consistent with the theoretical calculation and analysis. Collectively, ZT value ∼1 at 673 K and calculated leg efficiency ∼8.5% with Tc = 300 K and Th = 673 K are obtained for both AgSb0.98Mg0.02Se2 and AgSb0.98Ba0.02Se2 samples.

  8. Promoting oxygen vacancy formation and p-type conductivity in SrTiO3via alkali metal doping: a first principles study.

    Science.gov (United States)

    Triggiani, Leonardo; Muñoz-García, Ana B; Agostiano, Angela; Pavone, Michele

    2016-10-19

    Strontium titanate (SrTiO3, STO) is a prototypical perovskite oxide, widely exploited in many technological applications, from catalysis to energy conversion devices. In the context of solid-oxide fuel cells, STO has been recently applied as an epitaxial substrate for nano-sized layers of mixed ion-electron conductive catalysts with enhanced electrochemical performances. To extend the applications of such heterogeneous nano-cathodes in real devices, also the STO support should be active for both electron transport and oxide diffusion. To this end, we explored using first-principles calculations the strategy of doping of STO at the Sr site with sodium and potassium. These two ions fit in the perovskite structure and induce holes in the STO valence band, so as to obtain the desired p-type electronic conduction. At the same time, the doping with alkali ions also promotes the formation of oxygen vacancies in STO, a prerequisite for effective oxide diffusion. Analysis of electron density rearrangements upon defect formation allows relating the favorable vacancy formation energies to an improved electronic delocalization over the oxide sub-lattice, as observed in closely related materials (e.g. Sr2Fe1.5Mo0.5O6). Overall, our results suggest the alkali-doped STO as a new potential substrate material in nanoscale heterogeneous electrodes for solid oxide electrochemical cells.

  9. The effect of electronic orbital interactions on p-type doping tendency in ZnO series: First-principles calculations

    Institute of Scientific and Technical Information of China (English)

    Zhang Fang-Ying; You Jian-Qiang; Zeng Zhi; Zhong Guo-Hua

    2007-01-01

    The electronic structures and optical properties of B3 ZnO series of Zn4X4-yMy(X =O, S, Se or Te; M = N,Sb, Cl or I; y = 0 or 1) are studied by first-principles calculations using a pseudopotential plane-wave method. The results show that Zn d-X p orbital interactions play an important role in the p-type doping tendency in zinc-based Ⅱ-Ⅵ semiconductors. In ZnX, with increasing atomic number of X, Zn d-X p orbital interactions decrease and Zn s-X p orbital interactions increase. Additionally, substituting group-Ⅴ elements for X will reduce the Zn d-X p orbital interactions while substituting group-Ⅶ elements for X will increase the Zn d-X p orbital interactions. The results also show that group-Ⅴ-doped ZnX and group-Ⅶ-doped ZnX exhibit different optical behaviours due to their different orbital interaction effects.

  10. Direct identification of interstitial Mn in heavily p-type doped GaAs and evidence of its high thermal stability

    CERN Document Server

    Pereira, LMC; Correia, JG; Decoster, S; da Silva, MR; Araújo, JP; Vantomme, A

    2011-01-01

    We report on the lattice location of Mn in heavily p-type doped GaAs by means of $\\beta^{-}$-emission channeling from the decay of $^{56}$Mn. The majority of the Mn atoms substitute for Ga and up to 31% occupy the tetrahedral interstitial site with As nearest neighbors. Contrary to the general belief, we find that interstitial Mn is immobile up to 400$^{\\circ}$C, with an activation energy for diffusion of 1.7–2.3 eV. Such high thermal stability of interstitial Mn has significant implications on the strategies and prospects for achieving room temperature ferromagnetism in Ga$_{1−x}$Mn$_{x}$As.

  11. Low temperature p-type doping of (Al)GaN layers using ammonia molecular beam epitaxy for InGaN laser diodes

    Energy Technology Data Exchange (ETDEWEB)

    Malinverni, M., E-mail: marco.malinverni@epfl.ch; Lamy, J.-M.; Martin, D.; Grandjean, N. [ICMP, École Polytechnique Fédérale de Lausanne (EPFL), CH-1015 Lausanne (Switzerland); Feltin, E.; Dorsaz, J. [NOVAGAN AG, CH-1015 Lausanne (Switzerland); Castiglia, A.; Rossetti, M.; Duelk, M.; Vélez, C. [EXALOS AG, CH-8952 Schlieren (Switzerland)

    2014-12-15

    We demonstrate state-of-the-art p-type (Al)GaN layers deposited at low temperature (740 °C) by ammonia molecular beam epitaxy (NH{sub 3}-MBE) to be used as top cladding of laser diodes (LDs) with the aim of further reducing the thermal budget on the InGaN quantum well active region. Typical p-type GaN resistivities and contact resistances are 0.4 Ω cm and 5 × 10{sup −4} Ω cm{sup 2}, respectively. As a test bed, we fabricated a hybrid laser structure emitting at 400 nm combining n-type AlGaN cladding and InGaN active region grown by metal-organic vapor phase epitaxy, with the p-doped waveguide and cladding layers grown by NH{sub 3}-MBE. Single-mode ridge-waveguide LD exhibits a threshold voltage as low as 4.3 V for an 800 × 2 μm{sup 2} ridge dimension and a threshold current density of ∼5 kA cm{sup −2} in continuous wave operation. The series resistance of the device is 6 Ω and the resistivity is 1.5 Ω cm, confirming thereby the excellent electrical properties of p-type Al{sub 0.06}Ga{sub 0.94}N:Mg despite the low growth temperature.

  12. Low-Temperature Facile Synthesis of Sb-Doped p-Type ZnO Nanodisks and Its Application in Homojunction Light-Emitting Diode.

    Science.gov (United States)

    Baek, Sung-Doo; Biswas, Pranab; Kim, Jong-Woo; Kim, Yun Cheol; Lee, Tae Il; Myoung, Jae-Min

    2016-05-25

    This study explores low-temperature solution-process-based seed-layer-free ZnO p-n homojunction light-emitting diode (LED). In order to obtain p-type ZnO nanodisks (NDs), antimony (Sb) was doped into ZnO by using a facile chemical route at 120 °C. The X-ray photoelectron spectra indicated the presence of (SbZn-2VZn) acceptor complex in the Sb-doped ZnO NDs. Using these NDs as freestanding templates, undoped n-type ZnO nanorods (NRs) were epitaxially grown at 95 °C to form ZnO p-n homojunction. The homojunction with a turn-on voltage of 2.5 V was found to be significantly stable up to 100 s under a constant voltage stress of 5 V. A strong orange-red emission was observed by the naked eye under a forward bias of 5 V. The electroluminescence spectra revealed three major peaks at 400, 612, and 742 nm which were attributed to the transitions from Zni to VBM, from Zni to Oi, and from VO to VBM, respectively. The presence of these deep-level defects was confirmed by the photoluminescence of ZnO NRs. This study paves the way for future applications of ZnO homojunction LEDs using low-temperature and low-cost solution processes with the controlled use of native defects.

  13. N and Al co-doping as a way to p-type ZnO without post-growth annealing

    Science.gov (United States)

    Snigurenko, Dymitr; Guziewicz, Elzbieta; Krajewski, Tomasz A.; Jakiela, Rafal; Syryanyy, Yevgen; Kopalko, Krzysztof; Paszkowicz, Wojciech

    2016-12-01

    We demonstrate experimental results on p-type ZnO films grown by atomic layer deposition (ALD) and co-doped with aluminum and nitrogen (ANZO). The films were obtained at low temperature (100 °C) with different N to Al ratio and show conductivity type, which depends on the N and Al content. We applied the x-ray photoelectron spectroscopy in order to get insight into a chemical nature of dopants and we found three pronounced contributions of the N1s core level which appear at binding energies of 396.1, 397.4 and around 399 eV. Based on ANZO and undoped ZnO films, both grown by the ALD technique, the ZnO homojunction was obtained in one technological process without any post-growth high temperature processing. The rectification ratio as high as 4 × 104 at ± 2 V was achieved when an ultrathin Al2O3 layer was inserted between p- and n-type ZnO and a n-type ZnO buffer layer deposited on an insulating Si substrate was applied.

  14. Magnetism by interfacial hybridization and p-type doping of MoS(2) in Fe(4)N/MoS(2) superlattices: a first-principles study.

    Science.gov (United States)

    Feng, Nan; Mi, Wenbo; Cheng, Yingchun; Guo, Zaibing; Schwingenschlögl, Udo; Bai, Haili

    2014-03-26

    Magnetic and electronic properties of Fe4N(111)/MoS2(√3 × √3) superlattices are investigated by first-principles calculations, considering two models: (I) Fe(I)Fe(II)-S and (II) N-S interfaces, each with six stacking configurations. In model I, strong interfacial hybridization between Fe(I)/Fe(II) and S results in magnetism of monolayer MoS2, with a magnetic moment of 0.33 μB for Mo located on top of Fe(I). For model II, no magnetism is induced due to weak N-S interfacial bonding, and the semiconducting nature of monolayer MoS2 is preserved. Charge transfer between MoS2 and N results in p-type MoS2 with Schottky barrier heights of 0.5-0.6 eV. Our results demonstrate that the interfacial geometry and hybridization can be used to tune the magnetism and doping in Fe4N(111)/MoS2(√3 × √3) superlattices.

  15. Magnetism by interfacial hybridization and p-type doping of MoS2 in Fe4N/MoS2 superlattices: A first-principles study

    KAUST Repository

    Feng, Nan

    2014-03-26

    Magnetic and electronic properties of Fe4N(111)/MoS 2(√3 × √3) superlattices are investigated by first-principles calculations, considering two models: (I) FeIFe II-S and (II) N-S interfaces, each with six stacking configurations. In model I, strong interfacial hybridization between FeI/Fe II and S results in magnetism of monolayer MoS2, with a magnetic moment of 0.33 μB for Mo located on top of Fe I. For model II, no magnetism is induced due to weak N-S interfacial bonding, and the semiconducting nature of monolayer MoS2 is preserved. Charge transfer between MoS2 and N results in p-type MoS2 with Schottky barrier heights of 0.5-0.6 eV. Our results demonstrate that the interfacial geometry and hybridization can be used to tune the magnetism and doping in Fe4N(111)/MoS2(√3 × √3) superlattices. © 2014 American Chemical Society.

  16. Cross-section imaging and p-type doping assessment of ZnO/ZnO:Sb core-shell nanowires by scanning capacitance microscopy and scanning spreading resistance microscopy

    Science.gov (United States)

    Wang, Lin; Sallet, Vincent; Sartel, Corinne; Brémond, Georges

    2016-08-01

    ZnO/ZnO:Sb core-shell structured nanowires (NWs) were grown by the metal organic chemical vapor deposition method where the shell was doped with antimony (Sb) in an attempt to achieve ZnO p-type conduction. To directly investigate the Sb doping effect in ZnO, scanning capacitance microscopy (SCM) and scanning spreading resistance microscopy (SSRM) were performed on the NWs' cross-sections mapping their two dimensional (2D) local electrical properties. Although no direct p-type inversion in ZnO was revealed, a lower net electron concentration was pointed out for the Sb-doped ZnO shell layer with respect to the non-intentionally doped ZnO core, indicating an evident compensating effect as a result of the Sb incorporation, which can be ascribed to the formation of Sb-related acceptors. The results demonstrate SCM/SSRM investigation being a direct and effective approach for characterizing radial semiconductor one-dimensional (1D) structures and, particularly, for the doping study on the ZnO nanomaterial towards its p-type realization.

  17. Cross-section imaging and p-type doping assessment of ZnO/ZnO:Sb core-shell nanowires by scanning capacitance microscopy and scanning spreading resistance microscopy

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Lin, E-mail: lin.wang@insa-lyon.fr; Brémond, Georges [Institut des Nanotechnologies de Lyon (INL), Université de Lyon, CNRS UMR 5270, INSA Lyon, Bat. Blaise Pascal, 7 Avenue, Jean Capelle, 69621 Villeurbanne (France); Sallet, Vincent; Sartel, Corinne [Groupe d' étude de la Matière Condensée (GEMaC), CNRS - Université de Versailles St Quentin en Yvelines, Université Paris-Saclay, 45 Avenue des Etats-Unis, 78035 Versailles (France)

    2016-08-29

    ZnO/ZnO:Sb core-shell structured nanowires (NWs) were grown by the metal organic chemical vapor deposition method where the shell was doped with antimony (Sb) in an attempt to achieve ZnO p-type conduction. To directly investigate the Sb doping effect in ZnO, scanning capacitance microscopy (SCM) and scanning spreading resistance microscopy (SSRM) were performed on the NWs' cross-sections mapping their two dimensional (2D) local electrical properties. Although no direct p-type inversion in ZnO was revealed, a lower net electron concentration was pointed out for the Sb-doped ZnO shell layer with respect to the non-intentionally doped ZnO core, indicating an evident compensating effect as a result of the Sb incorporation, which can be ascribed to the formation of Sb-related acceptors. The results demonstrate SCM/SSRM investigation being a direct and effective approach for characterizing radial semiconductor one-dimensional (1D) structures and, particularly, for the doping study on the ZnO nanomaterial towards its p-type realization.

  18. Poole-Frenkel effect on electrical characterization of Al-doped ZnO films deposited on p-type GaN

    Energy Technology Data Exchange (ETDEWEB)

    Huang, Bohr-Ran [Graduate Institute of Electro-Optical Engineering and Department of Electronic Engineering, National Taiwan University of Science and Technology, Taipei 106, Taiwan (China); Liao, Chung-Chi [Department of Electronic Engineering, National Taiwan University of Science and Technology, Taipei 106, Taiwan (China); Ke, Wen-Cheng, E-mail: wcke@saturn.yzu.edu.tw; Chang, Yuan-Ching; Huang, Hao-Ping [Department of Mechanical Engineering, Yuan Ze University, Chung-Li 320, Taiwan (China); Chen, Nai-Chuan [Institute of Electro-Optical Engineering and Department of Electronic Engineering, Chang Gung University, Tao-Yuan 333, Taiwan (China)

    2014-03-21

    This paper presents the electrical properties of Al-doped ZnO (AZO) films directly grown on two types of p-type GaN thin films. The low-pressure p-GaN thin films (LP-p-GaN) exhibited structural properties of high-density edge-type threading dislocations (TDs) and compensated defects (i.e., nitrogen vacancy). Compared with high-pressure p-GaN thin films (HP-p-GaN), X-ray photoemission spectroscopy of Ga 3d core levels indicated that the surface Fermi-level shifted toward the higher binding-energy side by approximately 0.7 eV. The high-density edge-type TDs and compensated defects enabled surface Fermi-level shifting above the intrinsic Fermi-level, causing the surface of LP-p-GaN thin films to invert to n-type semiconductor. A highly nonlinear increase in leakage current regarding reverse-bias voltage was observed for AZO/LP-p-GaN. The theoretical fits for the reverse-bias voltage region indicated that the field-assisted thermal ionization of carriers from defect associated traps, which is known as the Poole-Frenkel effect, dominated the I-V behavior of AZO/LP-p-GaN. The fitting result estimated the trap energy level at 0.62 eV below the conduction band edge. In addition, the optical band gap increased from 3.50 eV for as-deposited AZO films to 3.62 eV for 300 °C annealed AZO films because of the increased carrier concentration. The increasing Fermi-level of the 300 °C annealed AZO films enabled the carrier transport to move across the interface into the LP-p-GaN thin films without any thermal activated energy. Thus, the Ohmic behavior of AZO contact can be achieved directly on the low-pressure p-GaN films at room temperature.

  19. Surface chemical structure and doping characteristics of boron-doped Si nanowires fabricated by plasma doping

    Science.gov (United States)

    Oh, Seung-Hoon; Ma, Jin-Won; Bae, Jung Min; Kang, Yu-seon; Ahn, Jae-Pyung; Kang, Hang-Kyu; Chae, Jimin; Suh, Dongchan; Song, Woobin; Kim, Sunjung; Cho, Mann-Ho

    2017-10-01

    We investigated the conduction characteristics of plasma-doped Si nanowires (NWs) after various rapid thermal annealing (RTA) times. The plasma doping (PD) process developed a highly-deposited B layer at the NW surface. RTA process controls electrical conductivity by mediating the dopant diffusion from the surface layer. The surface chemical and substitutional states of the B plasma-doped Si NWs were analyzed by x-ray photoelectron spectroscopy (XPS) and Raman spectroscopy. To elucidate the detailed structure of the NWs, we analyzed the change in the optical phonon mode caused by the incorporated B atoms. For this purpose, we examined Fano resonance by the investigation of the asymmetry, line-width, and phonon wavenumber in Raman spectra. The changes in symmetry level of the Raman peak, phonon lifetime, and internal strain were closely related to the number of electrically activated borons, which was drastically increased with RTA time. The change in electrical and optical characterizations related to the doping characteristics of the NWs was investigated using a 4-point probe and terahertz time-domain spectroscopy (THz-TDS). The resistivity of the NWs was 3000 times lower after the annealing process compared to that before the annealing process, which is well consistent with the optical conductivity data. The data provide the potential utility of PD in conformal doping for three-dimensional nanodevices.

  20. Na-Diffusion Enhanced p-type Conductivity in Cu(In,Ga)Se 2 : A New Mechanism for Efficient Doping in Semiconductors

    Energy Technology Data Exchange (ETDEWEB)

    Yuan, Zhen-Kun [Key Laboratory for Computational Physical Sciences (MOE), State Key Laboratory of Surface Physicsand Department of Physics, Collaborative Innovation Center of Advanced Microstructures, Fudan University, Shanghai 200433 China; Chen, Shiyou [Key Laboratory of Polar Materials and Devices (MOE), East China Normal University, Shanghai 200241 China; Collaborative Innovation Center of Extreme Optics, Shanxi University, Taiyuan Shanxi 030006 China; Xie, Yun [Key Laboratory for Computational Physical Sciences (MOE), State Key Laboratory of Surface Physicsand Department of Physics, Collaborative Innovation Center of Advanced Microstructures, Fudan University, Shanghai 200433 China; Park, Ji-Sang [National Renewable Energy Laboratory, Golden CO 80401 USA; Xiang, Hongjun [Key Laboratory for Computational Physical Sciences (MOE), State Key Laboratory of Surface Physicsand Department of Physics, Collaborative Innovation Center of Advanced Microstructures, Fudan University, Shanghai 200433 China; Gong, Xin-Gao [Key Laboratory for Computational Physical Sciences (MOE), State Key Laboratory of Surface Physicsand Department of Physics, Collaborative Innovation Center of Advanced Microstructures, Fudan University, Shanghai 200433 China; Wei, Su-Huai [Beijing Computational Science Research Center, Beijing 100094 China

    2016-08-30

    A new mechanism responsible for the hole concentration increase in the CIGS thin films after Na doping is proposed. At high temperature, a high concentration of Na is doped into the grains. After cooling and water rinsing, the solubility of Na becomes lower, so Na diffuses out of the grains with high concentration of Cu vacancies and hole carriers formed.

  1. Study the Characteristic of P-Type Junction-Less Side Gate Silicon Nanowire Transistor Fabricated by Atomic Force Microscopy Lithography

    Directory of Open Access Journals (Sweden)

    Arash Dehzangi

    2011-01-01

    Full Text Available Problem statement: Nanotransistor now is one of the most promising fields in nanoelectronics in order to decrease the energy consuming and application to create developed programmable information processors. Most of Computing and communications companies invest hundreds of millions of dollars in research funds every year to develop smaller transistors. Approach: The Junction-less side gate silicon Nano-wire transistor has been fabricated by Atomic Force Microscopy (AFM and wet etching on p-type Silicon On Insulator (SOI wafer. Then, we checked the characteristic and conductance trend in this device regarding to semi-classical approach by Semiconductor Probe Analyser (SPA. Results: We observed in characteristic of the device directly proportionality of the negative gate voltage and Source-Drain current. In semi classical approach, negative Gate voltage decreased the energy States of the Nano-wire between the source and the drain. The graph for positive gate voltage plotted as well to check. In other hand, the conductance will be following characteristic due to varying the gate voltage under the different drain-source voltage. Conclusion: The channel energy states are supposed to locate between two electrochemical potentials of the contacts in order to transform the charge. For the p-type channel the transform of the carriers is located in valence band and changing the positive or negative gate voltage, making the valence band energy states out of or in the area between the electrochemical potentials of the contacts causing the current reduced or increased.

  2. Impact of common metallurgical impurities on ms-Si solar cell efficiency. P-type versus n-type doped ingots

    Energy Technology Data Exchange (ETDEWEB)

    Geerligs, L.J.; Manshanden, P. [ECN Solar Energy, Petten (Netherlands); Solheim, I.; Ovrelid, E.J.; Waernes, A.N. [Sintef materials technology, Trondheim (Norway)

    2006-09-15

    Silicon solar cells based on n-type silicon wafers are less sensitive to carrier lifetime degradation due to several common metal impurities than p-base cells. The theoretical and experimental indications for this have recently received considerable attention. This paper compares p-type and n-type cells purposely contaminated with relatively high levels of impurities, processed by industrial techniques. The impurities considered are Al, Ti, and Fe, which are the dominant impurities in metallurgical silicon and natural quartz. The work also preliminary addresses the question whether the optimal wafer resistivity is the same for n-type as for p-type base mc-Si cells.

  3. Influence of film thickness and oxygen partial pressure on cation-defect-induced intrinsic ferromagnetic behavior in luminescent p-type Na-doped ZnO thin films.

    Science.gov (United States)

    Ghosh, S; Khan, Gobinda Gopal; Varma, Shikha; Mandal, K

    2013-04-10

    In this article, we have investigated the effect of oxygen partial pressure (PO2) and film thickness on defect-induced room-temperature (RT) ferromagnetism (FM) of highly c-axis orientated p-type Na-doped ZnO thin films fabricated by pulse laser deposition (PLD) technique. We have found that the substitution of Na at Zn site (NaZn) can be effective to stabilize intrinsic ferromagnetic (FM) ordering in ZnO thin films with Curie temperature (TC) as high as 509 K. The saturation magnetization (MS) is found to decrease gradually with the increase in thickness of the films, whereas an increase in "MS" is observed with the increase in PO2 of the PLD chamber. The enhancement of ferromagnetic signature with increasing PO2 excludes the possibility of oxygen vacancy (VO) defects for the magnetic origin in Na-doped ZnO films. On the other hand, remarkable enhancement in the green emission (IG) are observed in the photoluminescence (PL) spectroscopic measurements due to Na-doping and that indicates the stabilization of considerable amount of Zn vacancy (VZn)-type defects in Na-doped ZnO films. Correlating the results of PL and X-ray photoelectron spectroscopy (XPS) studies with magnetic measurements we have found that VZn and Na substitutional (NaZn) defects are responsible for the hole-mediated FM in Na-doped ZnO films, which might be an effective candidate for modern spintronic technology.

  4. Tight-binding study of the hole subband structure properties of p-type delta-doped quantum wells in Si by using a Thomas-Fermi-Dirac potential

    Energy Technology Data Exchange (ETDEWEB)

    Rodriguez-Vargas, I; Madrigal-Melchor, J; Vlaev, S J, E-mail: isaac@planck.reduaz.m [Unidad Academica de Fisica, Universidad Autonoma de Zacatecas, Calzada Solidaridad Esquina Con Paseo La Bufa S/N, 98060 Zacatecas, ZAC. (Mexico)

    2009-05-01

    We present the hole subband structure of p-type delta-doped single, double, multiple and superlattice quantum wells in Si. We use the first neighbors sp{sup 3}s' tight-binding approximation including spin for the hole level structure analysis. The parameters of the tight-binding hamiltonian were taken from Klimeck et al. [Klimeck G, Bowen R C, Boykin T B, Salazar-Lazaro C, Cwik T A and Stoica A 2000 Superlattice. Microst. 27 77], first neighbors parameters that give realiable results for the valence band of Si. The calculations are based on a scheme previously proposed and applied to delta-doped quantum well systems [Vlaev S J and Gaggero-Sager L M 1998 Phys. Rev. B 58 1142]. The scheme relies on the incorporation of the delta-doped quantum well potential in the diagonal terms of the tight-binding hamiltonian. We give a detail description of the delta-doped quantum well structures, this is, we study the hole subband structure behavior as a function of the impurity density, the interwell distance of the doped planes and the superlattice period. We also compare our results with the available theoretical and experimental data, obtaining a reasonable agreement.

  5. Preparation and Properties of N-Doped p-Type ZnO Films by Solid-Source Chemical Vapour Deposition with the c-Axis Parallel to the Substrate

    Institute of Scientific and Technical Information of China (English)

    吕建国; 叶志镇; 汪雷; 赵炳辉; 黄靖云

    2002-01-01

    We report on N-doped p-type ZnO films with the c-axis parallel to the substrate. ZnO films were prepared onan α-A12O3 (0001) substrate by solid-source chemical vapour deposition (CVD). Zn( CH3COO)2.2H2O was usedas the precursor and CH3COONH4 as the nitrogen source. The growth temperature was varied from 300℃ C to600℃ C. The as-grown ZnO film deposited at 500° C showed p-type conduction with its resistivity of 42 Ωcrm, carrierdensity 3.7 × 1017 cm-3 and Hall mobility 1.26cm2V-1.s-1 at room temperature, which are the best propertiesfor p-type ZnO deposited by CVD. The p-type ZnO film possesses a transmittance of about 85% in the visibleregion and a bandgap of 3.21 eV at room temperature.

  6. Effect of doping on photovoltaic characteristics of graphene

    Science.gov (United States)

    Deepshikha

    2016-12-01

    Chemical doping of CVD grown graphene by introducing PTSA ( n-type) and NBD ( p-type) dopants is explored. This type of doping is key building block for photovoltaic and optoelectronic devices. Doped graphene samples display (1) high transmittance in the visible and near-infrared spectrum and (2) tunable graphene sheet resistance and work function. Large area and uniform graphene films were produced by chemical vapor deposition on copper foils and transferred onto quartz as transparent substrates. For n doping, a solution of p-toluenesulfonic acid (PTSA) was first dropped and spin-coated on the graphene/quartz and then annealed at 100°C for 10 min to make graphene uniformly n-type. Subsequently, a bare graphene was transferred on another quartz substrate, a solution of 4-nitrobenzenediazonium tetrafluoroborate (NBD) was dropped and spin-coated on the surface of graphene and similarly annealed. As a result, the graphene was p and n doped on the different quartz substrates. Doped graphene samples were characterized by different techniques. Experimental results suggested that doped graphene sheets with tunable electrical resistance and high optical transparency can be incorporated into photovoltaics and optoelectronics devices.

  7. Realization of Ultraviolet Electroluminescence from ZnO Homo junction Fabricated on Silicon Substrate with p-Type ZnO:N Layer Formed by Radical N2O Doping

    Institute of Scientific and Technical Information of China (English)

    SUN Jing-Chang; LIANG Hong-Wei; ZHAO Jian-Ze; BIAN Ji-Ming; FENG Qiu-Ju; WANG Jing-Wei; ZHAO Zi-Wen; DU Guo-Tong

    2008-01-01

    @@ ZnO homojunction light-emitting diodes are fabricated on Si(100) substrates by plasma assisted metal organic chemical vapour deposition, A p-type layer of nitrogen-doped ZnO film is formed using radical N2O as the acceptor precursor.The n-type ZnO layer is composed of un-doped ZnO film.The device exhibits desirable rectifying behaviour with a turn-on voltage of 3.3 V and a reverse breakdown voltage higher than 6 V.Distinct electroluminescence emissions centred at 395nm and 49Ohm are detected from this device at forvcard current higher than 20mA at room temperature.

  8. Photovoltaic characteristic of Al-doped ZnO/Si heterojunction

    Energy Technology Data Exchange (ETDEWEB)

    Wang Shufang, E-mail: swang2008@hotmail.co [College of Physics Science and Technology, Hebei University, Baoding 071002 (China); Chen Mingjing; Zhao Xiaohui; Chen Jingchun; Yu Wei; Wang Jianglong [College of Physics Science and Technology, Hebei University, Baoding 071002 (China); Fu Guangsheng, E-mail: Fugs@hotmail.co [College of Physics Science and Technology, Hebei University, Baoding 071002 (China)

    2010-12-15

    A heterojunction composed of n-type Al-doped ZnO and p-type Si was fabricated and its photovoltaic properties were studied at room temperature. The heterojunction exhibits an asymmetric current-voltage relation with good rectifying characteristic. Clear photovoltaic signals are observed when the heterojunction is irradiated by the laser pulses of 308, 532 and 1064 nm, and the voltage responsivity of the 308 nm irradiation is lower than that for 532 and 1064 nm irradiations. The mechanism is proposed based on the band structure of the p-n heterojunctions. The results suggest that this Al-doped ZnO/Si heterojunction has a great potential application in the wide-band photodetectors from ultraviolet to near infrared.

  9. Electronic transport in n- and p-type modulation doped Ga{sub x}In{sub 1-x}N{sub y}As{sub 1-y}/ GaAs quantum wells

    Energy Technology Data Exchange (ETDEWEB)

    Sun, Y; Balkan, N [School of Computer Science and Electronic Engineering, University of Essex, Wivenhoe Park, Colchester CO4 3SQ (United Kingdom); Aslan, M; Arikan, M C [Faculty of Science, Department of Physics, Istanbul University, 34134 Istanbul (Turkey); Lisesivdin, S B [Department of Physics, Faculty of Science and Arts, Gazi University, Teknikokullar, 06500 Ankara (Turkey); Carrere, H; Marie, X [Department of Physics, INSA, 135 avenue de Rangeil, 31077 Toulouse cedex 4 (France)], E-mail: balkan@essex.ac.uk

    2009-04-29

    We present a comprehensive study of longitudinal transport of two-dimensional (2D) carriers in n- and p-type modulation doped Ga{sub x}In{sub 1-x}N{sub y}As{sub 1-y} /GaAs quantum well structures. The Hall mobility and carrier density of electrons in the n-modulation doped quantum wells (QWs) decreases with increasing nitrogen composition. However, the mobility of the 2D holes in p-modulation doped wells is not influenced by nitrogen and it is significantly higher than that of 2D electrons in n-modulation doped material. The observed behaviour is explained in terms of increasing electron effective mass as well as enhanced N-related alloying scattering with increasing nitrogen content. In order to determine the conduction band (CB) and valence band (VB) structures as well as electron and hole effective masses, the band anticrossing model with an eight-band k.p approximation in the Luettinger-Kohn approach is used. The effects of strain, quantum confinement and the strong coupling between the localized nitrogen states and the CB extended states of GaInAs are considered in the calculations. The results indicate that the nitrogen induces a strong perturbation to the CB of the matrix semiconductor whilst the VB remains unaffected. The temperature dependent mobility of 2D electron gas is discussed using an analytical model that accounts for the most important scattering mechanisms. The results indicate that the interface roughness and N-related alloy scattering are the dominant mechanisms at low temperatures, while polar optical phonon and N-related alloy scattering limit mobility at high temperatures.

  10. Electrical Properties of Photodiode Ba0.25Sr0.75TiO3 (BST Thin Film Doped with Ferric Oxide on p-type Si (100 Substrate using Chemical Solution Deposition Method

    Directory of Open Access Journals (Sweden)

    Irzaman

    2011-12-01

    Full Text Available In this paper we have grown pure Ba0.25Sr0.75TiO3 (BST and BST doped by Ferric Oxide Fe2O3 (BFST with doping variations of 5%, 10%, and 15% above type-p Silicon (100 substrate using the chemical solution deposition (CSD method with spin coating technique at rotation speed of 3000 rpm, for 30 seconds. BST thin film are made with a concentration of 1 M 2-methoxyethanol and annealing temperature of 850OC for the Si (100 substrate. Characterization of the thin film is performed for the electrical properties such as the current-voltage (I-V curve using Keithley model 2400 as well as dielectric constant, time constant, pyroelectric characteristics, and depth measurement. The results show that the thin film depth increases if the concentration of the Ferric Oxide doping increases. The I-V characterization shows that the BST and BFST thin film has photodiode properties. The dielectric constant increases with the addition of doping. The maximum dielectric constant value is obtained for 15 % doping concentration namely 83.1 for pure BST and 6.89, 11.1, 41.63 and 83.1, respectively for the Ferric Oxide doping based BST with concentration of 5%, 10%, and 15%. XRD spectra of 15 % of ferric oxide doped BST thin film tetragonal phase, we carried out the lattice constant were a = b = 4.203 Å; c = 4.214 Å; c/a ratio = 1.003

  11. Nanoscopic oxidation of p-type and un-doped Si (100) surfaces using un-externally biased atomic force microscope tips (AFM) in the presence of selected organic solvents

    Science.gov (United States)

    McCausland, Jeffrey; Withanage, Sajeevi; Mallik, Robert; Lyuksyutov, Sergei

    A conductive un-biased AFM tip oscillating above p-type or un-doped Si (100) treated with toluene, butan-2-ol, and propan-2-ol creates nanostructures ranging in height from 1-100 nm. The tip was oscillated in ambient conditions (30-70% Rel. Humidity) at frequencies in the 102 kHz range. It was repeatable with various concentrations of solvent in aqueous solution. It is suggested that mechanical oscillations of the AFM tip polarizes the solvent molecules deposited on the surface resulting in electron transfer from the tip to the surface followed by feature formation. This process effectively creates an electrochemical cell at the microscopic level and the miscibility of the solvents is the key to enabling the process. Species which ionize during the process may be consumed in irreversible reactions whereas the alcohols act as catalysts and are not consumed. The influence of boron defects in the Si substrates is also discussed. It appears that the observed oxidation is different from all other similar reported phenomena including local anodic oxidation, and chemo-mechanical lithographic techniques utilizing AFM.

  12. Fabrication of p-type ZnO nanofibers by electrospinning for field-effect and rectifying devices

    Energy Technology Data Exchange (ETDEWEB)

    Liu, Shuai; Liu, Shu-Liang; Liu, Ling-Zhi; Liu, Yi-Chen [College of Physics, Qingdao University, Qingdao 266071 (China); Long, Yun-Ze, E-mail: yunze.long@163.com [College of Physics, Qingdao University, Qingdao 266071 (China); Key Laboratory of Photonics Materials and Technology in Universities of Shandong (Qingdao University), Qingdao 266071 (China); State Key Laboratory Cultivation Base of New Fiber Materials and Modern Textile, Qingdao University, Qingdao 266071 (China); Collaborative Innovation Center for Marine Biomass Fibers, Materials and Textiles of Shandong Province, Qingdao 266071 (China); Zhang, Hong-Di; Zhang, Jun-Cheng; Han, Wen-Peng [College of Physics, Qingdao University, Qingdao 266071 (China); Key Laboratory of Photonics Materials and Technology in Universities of Shandong (Qingdao University), Qingdao 266071 (China)

    2014-01-27

    Ce-doped p-type ZnO nanofibers were synthesized by electrospinning and followed calcinations. The surface morphology, elementary composition, and crystal structure of the nanofibers were investigated. The field effect curve confirms that the resultant Ce-doped ZnO nanofibers are p-type semiconductor. A p-n heterojunction device consisting of Ce-doped p-type ZnO nanofibers and n-type indium tin oxide (ITO) thin film was fabricated on a piece of quartz substrate. The current-voltage (I-V) characteristic of the p-n heterojunction device shows typical rectifying diode behavior. The turn-on voltage appears at about 7 V under the forward bias and the reverse current is impassable.

  13. Characteristics of Signals Originating Near the Lithium-Diffused N+ Contact of High Purity Germanium P-Type Point Contact Detectors

    CERN Document Server

    Aguayo, E; Avignone, F T; Barabash, A S; Barton, P J; Beene, J R; Bertrand, F E; Boswell, M; Brudanin, V; Busch, M; Chan, Y-D; Christofferson, C D; Collar, J I; Combs, D C; Cooper, R J; Detwiler, J A; Doe, P J; Efremenko, Yu; Egorov, V; Ejiri, H; Elliott, S R; Esterline, J; Fast, J E; Fields, N; Finnerty, P; Fraenkle, F M; Galindo-Uribarri, A; Gehman, V M; Giovanetti, G K; Green, M P; Guiseppe, V E; Gusey, K; Hallin, A L; Hazama, R; Henning, R; Hoppe, E W; Horton, M; Howard, S; Howe, M A; Johnson, R A; Keeter, K J; Kidd, M F; Knecht, A; Kochetov, O; Konovalov, S I; Kouzes, R T; LaFerriere, B D; Leon, J; Leviner, L E; Loach, J C; Looker, Q; Luke, P N; MacMullin, S; Marino, M G; Martin, R D; Merriman, J H; Miller, M L; Mizouni, L; Nomachi, M; Orrell, J L; Overman, N R; Perumpilly, G; Phillips, D G; Poon, A W P; Radford, D C; Rielage, K; Robertson, R G H; Ronquest, M C; Schubert, A G; Shima, T; Shirchenko, M; Snavely, K J; Steele, D; Strain, J; Timkin, V; Tornow, W; Varner, R L; Vetter, K; Vorren, K; Wilkerson, J F; Yakushev, E; Yaver, H; Young, A R; Yu, C -H; Yumatov, V

    2012-01-01

    A study of signals originating near the lithium-diffused n+ contact of p-type point contact (PPC) high purity germanium detectors (HPGe) is presented. The transition region between the active germanium and the fully dead layer of the n+ contact is examined. Energy depositions in this transition region are shown to result in partial charge collection. This provides a mechanism for events with a well defined energy to contribute to the continuum of the energy spectrum at lower energies. A novel technique to quantify the contribution from this source of background is introduced. Experiments that operate germanium detectors with a very low energy threshold may benefit from the methods presented herein.

  14. Characteristics of Signals Originating near the Lithium-Diffused N+ Contact of High Purity Germanium P-Type Point Contact Detectors

    Energy Technology Data Exchange (ETDEWEB)

    Aguayo, E. [Pacific Northwest National Laboratory (PNNL); Amman, M. [Lawrence Berkeley National Laboratory (LBNL); Avignone, F. T. [University of South Carolina/ORNL; Barabash, A.S. [Institute of Theoretical & Experimental Physics, Moscow, Russia; Barton, P. J. [Lawrence Berkeley National Laboratory (LBNL); Beene, James R [ORNL; Bertrand Jr, Fred E [ORNL; Boswell, M. [Los Alamos National Laboratory (LANL); Brudanin, V. [Joint Institute for Nuclear Research, Dubna, Russia; Busch, M. [Duke University; Chan, Y-D [Lawrence Berkeley National Laboratory (LBNL); Christofferson, C. D. [South Dakota School of Mines & Technology, Rapid City, SD; Collar, Juan I. [University of Chicago; Combs, D. C. [University of North Carolina / Triangle Universities Nuclear Lababoratory, Durham; Cooper, Reynold J [ORNL; Detwiler, J.A. [Lawrence Berkeley National Laboratory (LBNL); Doe, P. J. [University of Washington; Efremenko, Yuri [University of Tennessee (UTK) and Oak Ridge National Laboratory (ORNL); Egorov, V. [Joint Institute for Nuclear Research, Dubna, Russia; Ejiri, H. [Osaka University; Elliott, S. R. [Los Alamos National Laboratory (LANL); Esterline, J. [Duke University; Fast, J.E. [Pacific Northwest National Laboratory (PNNL); Fields, N. [University of Chicago; Finnerty, P. [University of North Carolina / Triangle Universities Nuclear Lababoratory, Durham; Fraenkle, F. M. [University of North Carolina / Triangle Universities Nuclear Lababoratory, Durham; Galindo-Uribarri, Alfredo {nmn} [ORNL; Gehman, V. M. [Los Alamos National Laboratory (LANL); Giovanetti, G. K. [Univ, of North Carolina & Triangle Universities Nucl. Lab - Durham, NC; Green, M. P. [University of North Carolina / Triangle Universities Nuclear Lababoratory, Durham; Guiseppe, V.E. [University of South Dakota; Gusey, K. [Joint Institute for Nuclear Research, Dubna, Russia; Hallin, A. L. [University of Alberta, Edmonton, Canada; Hazama, R. [Osaka University; Henning, R. [Univ, of North Carolina & Triangle Universities Nucl. Lab - Durham, NC; Hoppe, E.W. [Pacific Northwest National Laboratory (PNNL); Horton, M. [South Dakota School of Mines & Technology, Rapid City, SD; Howard, S. [South Dakota School of Mines and Technology; Howe, M. A. [University of North Carolina / Triangle Universities Nuclear Lababoratory, Durham; Johnson, R. A. [University of Washington, Seattle; Keeter, K.J. [Black Hills State University, Spearfish, SD; Kidd, M. F. [Los Alamos National Laboratory (LANL); Knecht, A. [University of Washington, Seattle; Kochetov, O. [Joint Institute for Nuclear Research, Dubna, Russia; Konovalov, S.I. [Institute of Theoretical & Experimental Physics, Moscow, Russia; Kouzes, R. T. [Pacific Northwest National Laboratory (PNNL); LaFerriere, B. D. [Pacific Northwest National Laboratory (PNNL); Leon, J. [University of Washington, Seattle; Leviner, L. E. [University of North Carolina / Triangle Universities Nuclear Lababoratory, Durham; Loach, J.C. [Lawrence Berkeley National Laboratory (LBNL); Looker, Q. [Lawrence Berkeley National Laboratory (LBNL); Luke, P.N. [Lawrence Berkeley National Laboratory (LBNL); MacMullin, S. [University of North Carolina / Triangle Universities Nuclear Lababoratory, Durham; Marino, M. G. [University of Washington, Seattle; Martin, R.D. [Lawrence Berkeley National Laboratory (LBNL); Merriman, J. H. [Pacific Northwest National Laboratory (PNNL); Miller, M. L. [University of Washington, Seattle; Mizouni, L. [PPNL/Univ. of South Carolina; Nomachi, M. [Osaka University; Orrell, John L. [Pacific Northwest National Laboratory (PNNL); Overman, N. R. [Pacific Northwest National Laboratory (PNNL); Perumpilly, G. [University of South Dakota; Phillips II, D. G. [University of North Carolina / Triangle Universities Nuclear Lababoratory, Durham; Poon, A.W.P. [Lawrence Berkeley National Laboratory (LBNL); et al.

    2013-01-01

    A study of signals originating near the lithium-diffused n+ contact of p-type point contact (PPC) high purity germanium detectors (HPGe) is presented. The transition region between the active germanium and the fully dead layer of the n+ contact is examined. Energy depositions in this transition region are shown to result in partial charge collection. This provides a mechanism for events with a well defined energy to contribute to the continuum of the energy spectrum at lower energies. A novel technique to quantify the contribution from this source of background is introduced. Experiments that operate germanium detectors with a very low energy threshold may benefit from the methods presented herein.

  15. Hall and thermoelectric evaluation of p-type InAs

    Energy Technology Data Exchange (ETDEWEB)

    Wagener, M.C., E-mail: magnus.wagener@nmmu.ac.z [Department of Physics, Nelson Mandela Metropolitan University, Port Elizabeth (South Africa); Wagener, V.; Botha, J.R. [Department of Physics, Nelson Mandela Metropolitan University, Port Elizabeth (South Africa)

    2009-12-15

    This paper compares the galvanometric and thermoelectric evaluation of the electrical characteristics of narrow gap semiconductors. In particular, the influence of a surface inversion layer is incorporated into the analysis of the temperature-dependent Hall and thermoelectric measurements of p-type InAs. The temperature at which the Seebeck coefficient of p-type material changes sign is shown to be unaffected by the presence of degenerate conduction paths. This finding consequently facilitated the direct determination of the acceptor density of lightly doped thin film InAs.

  16. Nonlinear – characteristics study of doped SnO2

    Indian Academy of Sciences (India)

    S R Dhage; V Ravi; S K Date

    2004-02-01

    When tin oxide is doped with Sb2O3 and CoO, it shows highly nonlinear current ()–voltage () characteristics. Addition of CoO leads to creation of oxygen vacancies and helps in sintering of SnO2. Antimony oxide acts as a donor and increases the conductivity. The results are nearly the same when antimony oxide is replaced by tantalum oxide. The observed nonlinear coefficient, = 30 and the breakdown voltage is 120 V/mm.

  17. P-type transparent conducting oxides

    Science.gov (United States)

    Zhang, Kelvin H. L.; Xi, Kai; Blamire, Mark G.; Egdell, Russell G.

    2016-09-01

    Transparent conducting oxides constitute a unique class of materials combining properties of electrical conductivity and optical transparency in a single material. They are needed for a wide range of applications including solar cells, flat panel displays, touch screens, light emitting diodes and transparent electronics. Most of the commercially available TCOs are n-type, such as Sn doped In2O3, Al doped ZnO, and F doped SnO2. However, the development of efficient p-type TCOs remains an outstanding challenge. This challenge is thought to be due to the localized nature of the O 2p derived valence band which leads to difficulty in introducing shallow acceptors and large hole effective masses. In 1997 Hosono and co-workers (1997 Nature 389 939) proposed the concept of ‘chemical modulation of the valence band’ to mitigate this problem using hybridization of O 2p orbitals with close-shell Cu 3d 10 orbitals. This work has sparked tremendous interest in designing p-TCO materials together with deep understanding the underlying materials physics. In this article, we will provide a comprehensive review on traditional and recently emergent p-TCOs, including Cu+-based delafossites, layered oxychalcogenides, nd 6 spinel oxides, Cr3+-based oxides (3d 3) and post-transition metal oxides with lone pair state (ns 2). We will focus our discussions on the basic materials physics of these materials in terms of electronic structures, doping and defect properties for p-type conductivity and optical properties. Device applications based on p-TCOs for transparent p-n junctions will also be briefly discussed.

  18. Luminescent characteristics of praseodymium-doped zinc aluminate powders

    Energy Technology Data Exchange (ETDEWEB)

    Hernandez-Perez, C.D.; Garcia-Hipolito, M.; Alvarez-Fregoso, O. [Instituto de Investigaciones en Materiales, Universidad Nacional Autonoma de Mexico, Coyoacan, DF (Mexico); Alvarez-Perez, M.A. [Facultad de Odontologia, Universidad Nacional Autonoma de Mexico, Coyoacan, DF (Mexico); Ramos-Brito, F. [Laboratorio de Materiales Optoelectronicos, DIDe, Centro de Ciencias de Sinaloa, Av. De las Americas No. 2771 Nte. Col. Villa Universidad, Culiacan, Sinaloa (Mexico); Falcony, C. [Centro de Investigaciones y Estudios Avanzados del IPN, Departamento de Fisica, Mexico, DF (Mexico)

    2010-02-15

    In this research, we report the cathodoluminescence (CL) and preliminary photoluminescence (PL) properties of praseodymium-doped zinc aluminate powders. ZnAl{sub 2}O{sub 4}:Pr powders were synthesized by a very simple chemical process. X-ray diffraction spectra indicated a cubic spinel crystalline structure with an average crystallite size of 15 nm. CL properties of the powders were studied as a function of the praseodymium concentration and electron-accelerating potential. In this case, all the cathodoluminescent emission spectra showed main peaks located at 494, 535, 611, 646, and 733 nm, which were associated to the electronic transitions {sup 3}P{sub 0}{yields}{sup 3}H{sub 4}, {sup 3}P{sub 0}{yields}{sup 3}H{sub 5}, {sup 3}P{sub 0}{yields}{sup 3}H{sub 6}, {sup 3}P{sub 0}{yields}{sup 3}F{sub 2}, and {sup 3}P{sub 0}{yields}{sup 3}F{sub 4} of the Pr{sup 3+} ions, respectively. A quenching of the CL, with increasing doping concentration, was observed. Also, an increment on cathodoluminescent emission intensity was observed as the accelerating voltage increased. The PL emission spectrum showed similar characteristics to those of the CL spectra. The chemical composition of the powders, as determined by energy dispersive spectroscopy, is also reported. In addition, the surface morphology characteristics of the powders are shown. (Abstract Copyright [2010], Wiley Periodicals, Inc.)

  19. Fabrication of p-type ZnSe:Sb nanowires for high-performance ultraviolet light photodetector application.

    Science.gov (United States)

    Nie, Biao; Luo, Lin-Bao; Chen, Jing-Jing; Hu, Ji-Gang; Wu, Chun-Yan; Wang, Li; Yu, Yong-Qiang; Zhu, Zhi-Feng; Jie, Jian-Sheng

    2013-03-08

    p-type ZnSe nanowires (NWs) with tunable electrical conductivity were fabricated on a large scale by evaporating a mixed powder composed of ZnSe and Sb in different ratios. According to the structural characterization, the Sb-doped ZnSe NWs are of single crystalline form and grow along the [001] direction. The presence of Sb in the ZnSe NWs was confirmed by XPS spectra. Electrical measurement of a single ZnSe:Sb NW based back-gate metal-oxide field-effect-transistor reveals that all the doped NWs exhibit typical p-type conduction characteristics, and the conductivity can be tuned over eight orders of magnitude, from 6.36 × 10(-7) S cm(-1) for the undoped sample to ∼37.33 S cm(-1) for the heavily doped sample. A crossed p-n nano-heterojunction photodetector made from the as-doped nanostructures displays pronounced rectification behavior, with a rectification ratio as high as 10(3) at ±5 V. Remarkably, it exhibits high sensitivity to ultraviolet light illumination with good reproducibility and quick photoresponse. Finally, the work mechanism of such a p-n junction based photodetector was elucidated. The generality of the above result suggests that the as-doped p-type ZnSe NWs will find wide application in future optoelectronics devices.

  20. Chaos synchronization characteristics in erbium-doped fiber laser systems

    Science.gov (United States)

    Imai, Y.; Murakawa, H.; Imoto, T.

    2003-03-01

    Chaos synchronization characteristics in the master-slave and slave-slave systems with modulated erbium-doped fiber lasers are investigated numerically. We find that synchronization state of chaos becomes better, i.e., the correlation coefficient between the two outputs reaches unity, as the difference in the input power between the two subsystems decreases and is not dependent strongly upon the difference in the modulation index in both the master-slave and slave-slave systems. In the master-slave system, the highest correlation coefficient is attained at the smaller pump power and the larger modulation index in the slave subsystem than those in the master subsystem. On the other hand, the correlation coefficient equal to unity is achieved with the identical parameters in the slave 1 and 2 subsystems in the slave-slave system.

  1. Dynamic characteristics of undoped and p-doped Fabry-Perot InAs/InP quantum dash based ridge waveguide lasers for access/metro networks

    Energy Technology Data Exchange (ETDEWEB)

    Mollet, O., E-mail: oriane.mollet@lpn.cnrs.fr; Martinez, A.; Merghem, K.; Ramdane, A. [CNRS, Laboratory for Photonics and Nanostructures, Route de Nozay, 91460 Marcoussis (France); Joshi, S.; Provost, J.-G.; Lelarge, F. [III-V Lab, A Joint Laboratory of Alcatel Lucent Bell Laboratories, Thales Research and Technology and CEA-LETI, Route de Nozay, 91460 Marcoussis (France)

    2014-10-06

    In this paper, we report the characteristics of InAs/InP quantum dashes (QDash) based lasers emitting around 1.55 μm. An unprecedented high modal gain of ∼100 cm{sup −1} is obtained for an optimized active structure by stacking 12 QDash layers. Directly modulated lasers allowed achieving a modulation bandwidth of ∼10 GHz and a Henry factor around 5. Thanks to p-type doping, the Henry factor value is reduced down to 2.7 while the modulation bandwidth still amounts to ∼10 GHz. This shows that doping of the active region is important to improve the dynamic characteristics of QDash lasers.

  2. Sonochemically synthesized iron-doped zinc oxide nanoparticles: Influence of precursor composition on characteristics

    Energy Technology Data Exchange (ETDEWEB)

    Roy, Anirban [Department of Chemical Engineering, University of Calcutta, 92, Acharya P. C. Road, Kolkata 700 009 (India); Maitra, Saikat [Government College of Engineering and Ceramic Technology, 73, A.C. Banerjee Lane, Kolkata 700 010 (India); Ghosh, Sobhan [Managing Innovations, House No. 188, Sector 14, Faridabad 121 007 (India); Chakrabarti, Sampa, E-mail: scchemengg@caluniv.ac.in [Department of Chemical Engineering, University of Calcutta, 92, Acharya P. C. Road, Kolkata 700 009 (India); Centre for Research in Nanoscience & Nanotechnology, University of Calcutta JD- 2, Sector-III, Salt Lake, Kolkata 700 098 (India)

    2016-02-15

    Highlights: • Sonochemical synthesis of iron-doped zinc oxide nanoparticles. • Green synthesis without alkali at room temperature. • Characterization by UV–vis spectroscopy, FESEM, XRD and EDX. • Influence of precursor composition on characteristics. • Composition and characteristics are correlated. - Abstract: Iron-doped zinc oxide nanoparticles have been synthesized sonochemically from aqueous acetyl acetonate precursors of different proportions. Synthesized nanoparticles were characterized with UV–vis spectroscopy, X-ray diffraction and microscopy. Influences of precursor mixture on the characteristics have been examined and modeled. Linear correlations have been proposed between dopant dosing, extent of doping and band gap energy. Experimental data corroborated with the proposed models.

  3. Charge storage characteristics and tunneling mechanism of amorphous Ge-doped HfOx films

    Science.gov (United States)

    Qiu, X. Y.; Zhang, S. Y.; Zhang, T.; Wang, R. X.; Li, L. T.; Zhang, Y.; Dai, J. Y.

    2016-09-01

    Amorphous Ge-doped HfOx films have been deposited on p-Si(100) substrates by means of RF magnetron sputtering. Microstructural investigations reveal the partial oxidation of doped Ge atoms in the amorphous HfOx matrix and the existence of HfSiOx interfacial layer. Capacitance-voltage hysteresis of the Ag-/Ge-doped HfOx/Si/Ag memory capacitor exhibits a memory window of 3.15 V which can maintain for >5 × 104 cycles. Current-voltage characteristics reveal that Poole-Frenkel tunneling is responsible for electron transport in the Ge-doped HfOx film.

  4. Comparing n- and p-type polycrystalline silicon absorbers in thin-film solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Deckers, J. [imec, Kapeldreef 75, B-3001 Heverlee, Leuven (Belgium); ESAT, KU Leuven, Kardinaal Mercierlaan 94, B-3001 Heverlee, Leuven (Belgium); Bourgeois, E. [Institute for Materials Research (IMO), Hasselt University, Wetenschapspark 1, B-3590 Diepenbeek (Belgium); IMOMEC, IMEC vzw, Wetenschapspark 1, B-3590 Diepenbeek (Belgium); Jivanescu, M. [Department of Physics and Astronomy, University of Leuven, Celestijnenlaan 200D, B-3001 Heverlee, Leuven (Belgium); Abass, A. [Photonics Research Group (INTEC), Ghent University-imec, Sint-Pietersnieuwstraat 41, B-9000 Ghent (Belgium); Van Gestel, D.; Van Nieuwenhuysen, K.; Douhard, B. [imec, Kapeldreef 75, B-3001 Heverlee, Leuven (Belgium); D' Haen, J.; Nesladek, M.; Manca, J. [Institute for Materials Research (IMO), Hasselt University, Wetenschapspark 1, B-3590 Diepenbeek (Belgium); IMOMEC, IMEC vzw, Wetenschapspark 1, B-3590 Diepenbeek (Belgium); Gordon, I.; Bender, H. [imec, Kapeldreef 75, B-3001 Heverlee, Leuven (Belgium); Stesmans, A. [Department of Physics and Astronomy, University of Leuven, Celestijnenlaan 200D, B-3001 Heverlee, Leuven (Belgium); Mertens, R.; Poortmans, J. [imec, Kapeldreef 75, B-3001 Heverlee, Leuven (Belgium); ESAT, KU Leuven, Kardinaal Mercierlaan 94, B-3001 Heverlee, Leuven (Belgium)

    2015-03-31

    We have investigated fine grained polycrystalline silicon thin films grown by direct chemical vapor deposition on oxidized silicon substrates. More specifically, we analyze the influence of the doping type on the properties of this model polycrystalline silicon material. This includes an investigation of defect passivation and benchmarking of minority carrier properties. In our investigation, we use a variety of characterization techniques to probe the properties of the investigated polycrystalline silicon thin films, including Fourier Transform Photoelectron Spectroscopy, Electron Spin Resonance, Conductivity Activation, and Suns-Voc measurements. Amphoteric silicon dangling bond defects are identified as the most prominent defect type present in these layers. They are the primary recombination center in the relatively lowly doped polysilicon thin films at the heart of the current investigation. In contrast with the case of solar cells based on Czochralski silicon or multicrystalline silicon wafers, we conclude that no benefit is found to be associated with the use of n-type dopants over p-type dopants in the active absorber of the investigated polycrystalline silicon thin-film solar cells. - Highlights: • Comparison of n- and p-type absorbers for thin-film poly-Si solar cells • Extensive characterization of the investigated layers' characteristics • Literature review pertaining the use of n-type and p-type dopants in silicon.

  5. Growth of GaN on sapphire via low-temperature deposited buffer layer and realization of p-type GaN by Mg doping followed by low-energy electron beam irradiation

    Energy Technology Data Exchange (ETDEWEB)

    Amano, Hiroshi [Department of Electrical Engineering and Computer Science, Venture Business Laboratory, Akasaki Research Center, Nagoya University (Japan)

    2015-06-15

    This is a personal history of one of the Japanese researchers engaged in developing a method for growing GaN on a sapphire substrate, paving the way for the realization of smart television and display systems using blue LEDs. The most important work was done in the mid to late 1980s. The background to the author's work and the process by which the technology enabling the growth of GaN and the realization of p-type GaN was established are reviewed. (copyright 2015 by WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  6. Characteristics and optimization of 4H-SiC MESFET with a novel p-type spacer layer incorporated with a field-plate structure based on improved trap models

    Institute of Scientific and Technical Information of China (English)

    Song Kun; Chai Changchun; Yang Yintang; Jia Hujun; Zhang Xianjun; Chen Bin

    2011-01-01

    A novel structure of 4H-SiC MESFETs is proposed that focuses on surface trap suppression.Characteristics of the device have been investigated based on physical models for material properties and improved trap models.By comparing with the performance of the well-utilized buried-gate incorporated with a field-plate (BG-FP) structure,it is shown that the proposed structure improves device properties in comprehensive aspects.A p-type spacer layer introduced in the channel layer suppresses the surface trap effect and reduces the gate-drain capacitance (Cgd) under a large drain voltage.A p-type spacer layer incorporated with a field-plate improves the electric field distribution on the gate edge while the spacer layer induces less Cgd than a conventional FP.For microwave applications,4H-SiC MESFET for the proposed structure has a larger gate-lag ratio in the saturation region due to better surface trap isolation from the conductive channel.For high power applications,the proposed structure is able to endure higher operating voltage as well.The maximum saturation current density of 460 mA/mm is yielded.Also,the gate-lag ratio under a drain voltage of 20 V is close to 90%.In addition,5% and 17.8% improvements in fT and fmax are obtained compared with a BG-FP MESFET in AC simulation,respectively.Parameters and dimensions of the proposed structure are optimized to make the best of the device for microwave applications and to provide a reference for device design.

  7. Characteristics and optimization of 4H-SiC MESFET with a novel p-type spacer layer incorporated with a field-plate structure based on improved trap models

    Energy Technology Data Exchange (ETDEWEB)

    Song Kun; Chai Changchun; Yang Yintang; Jia Hujun; Zhang Xianjun; Chen Bin, E-mail: sk88205853@sina.com [Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices of the Ministry of Education, School of Microelectronics, Xidian University, Xi' an 710071 (China)

    2011-07-15

    A novel structure of 4H-SiC MESFETs is proposed that focuses on surface trap suppression. Characteristics of the device have been investigated based on physical models for material properties and improved trap models. By comparing with the performance of the well-utilized buried-gate incorporated with a field-plate (BG-FP) structure, it is shown that the proposed structure improves device properties in comprehensive aspects. A p-type spacer layer introduced in the channel layer suppresses the surface trap effect and reduces the gate-drain capacitance (C{sub gd}) under a large drain voltage. A p-type spacer layer incorporated with a field-plate improves the electric field distribution on the gate edge while the spacer layer induces less C{sub gd} than a conventional FP. For microwave applications, 4H-SiC MESFET for the proposed structure has a larger gate-lag ratio in the saturation region due to better surface trap isolation from the conductive channel. For high power applications, the proposed structure is able to endure higher operating voltage as well. The maximum saturation current density of 460 mA/mm is yielded. Also, the gate-lag ratio under a drain voltage of 20 V is close to 90%. In addition, 5% and 17.8% improvements in f{sub T} and f{sub max} are obtained compared with a BG-FP MESFET in AC simulation, respectively. Parameters and dimensions of the proposed structure are optimized to make the best of the device for microwave applications and to provide a reference for device design. (semiconductor devices)

  8. The Electrical Characteristics of Aluminium Doped Zinc Oxide Thin Film for Humidity Sensor Applications

    Directory of Open Access Journals (Sweden)

    N. D. Md Sin

    2011-01-01

    Full Text Available The electrical characteristics of aluminum (Al doped zinc oxide (ZnO thin film for high sensitivity humidity sensors are presented. The effects of Al doping concentration at 0∼0.6 at % on the Al doped ZnO thin film properties were investigated using current-voltage measurement. The optical and structural properties were characterized using photoluminescence (PL, scanning emission microscope (SEM, and X-ray diffraction (XRD. Parameter 0.6 at % Aluminum doped show high sensitivity and suitable for humidity sensor. PL show an emissions band with two peaks centered at about 380 nm (ultra-violet (UV and 600 nm (green in a room temperature. The length of the nanorods increases as the doping concentration increases. XRD results show the intensity of the (002 peak decreased with the increasing of doping concentration.

  9. Physicochemical characteristics of fluorine doped tin oxide films

    Energy Technology Data Exchange (ETDEWEB)

    Martinez, A I [Electronics Department, National Institute for Astrophysics, Optics, and Electronics (INAOE), Luis E Erro No.1, 72000 Tonantzintla, Puebla (Mexico); Huerta, L [Instituto de Investigaciones en Materiales, Universidad Nacional Autonoma de Mexico, AP 70-360, 04510 Mexico DF (Mexico); Leon, J M O- Rueda de [Institute of Physics, National Autonomous University of Mexico, 04510 Mexico DF (Mexico); Acosta, D [Institute of Physics, National Autonomous University of Mexico, 04510 Mexico DF (Mexico); Malik, O [Electronics Department, National Institute for Astrophysics, Optics, and Electronics (INAOE), Luis E Erro No.1, 72000 Tonantzintla, Puebla (Mexico); Aguilar, M [Institute of Physics, National Autonomous University of Mexico, 04510 Mexico DF (Mexico)

    2006-12-07

    In this work, relationships between chemical and physical properties of fluorine doped tin oxide films prepared by the chemical spray pyrolysis technique have been studied. Changes in the structural, optical and electrical properties of these films in relation to their doping concentrations determined by the resonant nuclear reaction analysis and x-ray photoelectron spectroscopy (XPS) techniques have been correlated. By XPS measurements, it was found that the fluorine content in the tin oxide films does not induce any chemical shift of the Sn and O core levels. At the same time, XPS measurements are carried out at low binding energy, shown that the valence band of heavy doped tin oxide changes with respect to that determined in SnO{sub 2} powder, due to the influence of the fluorine doping. In addition, it was shown that the formation of F-Sn complexes provides a decrease in both the concentration and mobility of the carriers.

  10. Chemical-free n-type and p-type multilayer-graphene transistors

    Energy Technology Data Exchange (ETDEWEB)

    Dissanayake, D. M. N. M., E-mail: nandithad@voxtel-inc.com [Voxtel Inc, Lockey Laboratories, University of Oregon, Eugene Oregon 97402 (United States); Eisaman, M. D. [Sustainable Energy Technologies Department, Brookhaven National Laboratory, Upton, New York 11973 (United States); Department of Electrical and Computer Engineering, Stony Brook University, Stony Brook, New York 11794 (United States); Department of Physics and Astronomy, Stony Brook University, Stony Brook, New York 11794 (United States)

    2016-08-01

    A single-step doping method to fabricate n- and p-type multilayer graphene (MG) top-gate field effect transistors (GFETs) is demonstrated. The transistors are fabricated on soda-lime glass substrates, with the n-type doping of MG caused by the sodium in the substrate without the addition of external chemicals. Placing a hydrogen silsesquioxane (HSQ) barrier layer between the MG and the substrate blocks the n-doping, resulting in p-type doping of the MG above regions patterned with HSQ. The HSQ is deposited in a single fabrication step using electron beam lithography, allowing the patterning of arbitrary sub-micron spatial patterns of n- and p-type doping. When a MG channel is deposited partially on the barrier and partially on the glass substrate, a p-type and n-type doping profile is created, which is used for fabricating complementary transistors pairs. Unlike chemically doped GFETs in which the external dopants are typically introduced from the top, these substrate doped GFETs allow for a top gate which gives a stronger electrostatic coupling to the channel, reducing the operating gate bias. Overall, this method enables scalable fabrication of n- and p-type complementary top-gated GFETs with high spatial resolution for graphene microelectronic applications.

  11. Gain Characteristics of Er3+-Doped Phosphate Glass Fibres

    Institute of Scientific and Technical Information of China (English)

    XU Shan-Hui; YANG Zhong-Min; ZHANG Qin-Yuan; DENG Zai-De; JIANG Zhong-Hong

    2006-01-01

    @@ An erbium-doped phosphate glass fibre has been drawn by the rod-in-tube technique in our laboratory. The gain for the Er3+-doped phosphate glass fibre with different pump powers and with different input signal wavelengths is investigated. The 2.2-cm-long fibre, pumped by a single-mode 980-nm fibre-pigtailed laser diode, can provide a net gain per unit length greater than 1.8dB/cm. The pump threshold is about 50mW at the wavelength of 1534nm, and below 70mW at 1550nm. The gain linewidth of the Er3+-doped phosphate glass fibre is greater than 34 nm and can cover the C band in optical communication networks.

  12. Enhanced thermoelectric properties in p-type Bi{sub 0.4}Sb{sub 1.6}Te{sub 3} alloy by combining incorporation and doping using multi-scale CuAlO{sub 2} particles

    Energy Technology Data Exchange (ETDEWEB)

    Song, Zijun; Liu, Yuan; Zhou, Zhenxing; Lu, Xiaofang; Wang, Lianjun [State Key Laboratory for Modification of Chemical Fibers and Polymer Materials, College of Materials Science and Engineering, Donghua University, Shanghai (China); Institute of Functional Materials, Donghua University, Shanghai (China); Zhang, Qihao [State Key Laboratory of High Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai (China); University of Chinese Academy of Sciences, Beijing (China); Jiang, Wan [State Key Laboratory for Modification of Chemical Fibers and Polymer Materials, College of Materials Science and Engineering, Donghua University, Shanghai (China); Institute of Functional Materials, Donghua University, Shanghai (China); School of Material Science and Engineering, Jingdezhen Ceramic Institute, Jingdezhen (China); Chen, Lidong [State Key Laboratory of High Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai (China)

    2017-01-15

    Multi-scale CuAlO{sub 2} particles are introduced into the Bi{sub 0.4}Sb{sub 1.6}Te{sub 3} matrix to synergistically optimize the electrical conductivity, Seebeck coefficient, and the lattice thermal conductivity. Cu element originating from fine CuAlO{sub 2} grains diffuses into the Bi{sub 0.4}Sb{sub 1.6}Te{sub 3} matrix and tunes the carrier concentration while the coarse CuAlO{sub 2} particles survive as the second phase within the matrix. The power factor is improved at the whole temperatures range due to the low-energy electron filtering effect on Seebeck coefficient and enhanced electrical transport property by mild Cu doping. Meanwhile, the remaining CuAlO{sub 2} inclusions give rise to more boundaries and newly built interfaces scattering of heat-carrying phonons, resulting in the reduced lattice thermal conductivity. Consequently, the maximum ZT is found to be enhanced by 150% arising from the multi-scale microstructure regulation when the CuAlO{sub 2} content reaches 0.6 vol.%. Not only that, but the ZT curves get flat in the whole temperature range after introducing the multi-scale CuAlO{sub 2} particles, which leads to a remarkable increase in the average ZT. (copyright 2016 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  13. Low operation voltage of GaN-based LEDs with Al-doped ZnO upper contact directly on p-type GaN without insert layer

    Science.gov (United States)

    Chen, P. H.; Chen, Yu An; Chang, L. C.; Lai, W. C.; Kuo, Cheng Huang

    2015-07-01

    Al-doped ZnO (AZO) film was evaporated on double-side polished sapphire, p-GaN layers, n+-InGaN-GaN short-period superlattice (SPS) structures, and GaN-based light-emitting diodes (LEDs) by e-beam. The AZO film on the p-GaN layer after thermal annealing exhibited an extremely high transparency (98% at 450 nm) and a small specific contact resistance of 2.19 × 10-2 Ω cm2, which was almost the same as that of as-deposited AZO on n+-SPS structure. With 20 mA injection current, the forward voltages were 3.30 and 3.27 V, whereas the output powers were 4.32 and 4.07 mW for the LED with AZO on insert n+-SPS upper contact and the LED with AZO on p-GaN upper contact (without insert layer), respectively. The small specific contact resistance and low operation voltage of LED with AZO on p-GaN upper contact was achieved by rapid thermal annealing (RTA) process.

  14. Thermoluminescence characteristics of Sm3+ doped NaYF4 crystals

    Indian Academy of Sciences (India)

    M V Ramana Reddy; Ch Gopal Reddy; K Narasimha Reddy

    2007-02-01

    Thermoluminescence (TL) characteristics of NaYF4 crystals doped with Sm3+ have been studied after -ray irradiation. Dependence of luminescence efficiency on Sm3+ concentration and radiation dose has been measured and possible applications of NaYF4 : Sm3+ as a novel phosphor for TL dosimetry have been investigated. The efficiency of 0.3 mole% Sm3+ doped NaYF4 crystal has been found to be maximum and comparable with commercial thermoluminescence dosimetric (TLD) materials.

  15. Effect of cobalt on the magnetoresistance characteristics of rare-earth doped manganites

    Institute of Scientific and Technical Information of China (English)

    Jiang Kuo; Gong Sheng-Kai

    2009-01-01

    The effect of cobalt-doping on the magnetic, transport and magnetoresistance characteristics of La1-xSrxMnO3 was investigated. The results show that the magnetoelectric property of rare-earth doped manganites is greatly affected by substitution of Co for Mn sites. The Curie temperature as well as the magnetic moment decreases with the increase of doping concentration, and the samples exhibit obvious characteristics of the spin glass state. Moreover,the magnetoresistance is evidently modulated by doping concentration, and the relevant temperature dependence is also suppressed. In addition, low-temperature magnetorcsistance is significantly promoted as doping concentration increases, which renders a value of approximately 50% in the temperature range of 5-200 K and varies within 12.5%. It can be attributed to the effect of spin scattering, induced by cobalt doping, on the itinerant electrons of Mn ions, thus introducing a spin-disorder region into the ferromagnetic region of double-exchange interaction between neighbouring Mn3+ and Mn 4+ ions.

  16. Optical and electrical characteristics of pure and doped potassium hydrogen tartrate single crystals

    Energy Technology Data Exchange (ETDEWEB)

    Quasim, I; Khosa, S K; Kotru, P N [Crystal Growth and Materials Research Laboratory, Department of Physics and Electronics, University of Jammu, Jammu-180006- India (India); Firdous, A, E-mail: pnkotru@rediffmail.co [Department of Physics, National Institute of Technology, Srinagar - 190006, Jammu and Kashmir (India)

    2009-08-07

    The optical and electrical characteristics of pure, sodium- and lithium-doped potassium hydrogen tartrate crystals grown by the gel technique are reported. An optical absorption study conducted in the UV-Vis range of 200-800 nm reveals the transparency of these crystals in the entire visible range but not in the ultraviolet range. The optical band gap of pure potassium hydrogen tartrate crystals is found to be dependent on doping by Na or Li ions. The non-linear optical behaviour of these crystals is reported and explained. The electrical properties of pure and doped potassium hydrogen tartrate crystals are studied by measuring electrical resistivity from 80 to 300 K. It is shown that while pure potassium hydrogen tartrate crystal is an insulator at room temperature (300 K), doping by Na or Li ions makes it a semiconductor. The results have been explained in terms of the variable range hopping model.

  17. Study on the characteristics of erbium-doped waveguide ring laser

    Institute of Scientific and Technical Information of China (English)

    2009-01-01

    A theoretical model of the erbium-doped waveguide ring laser is established according to the theory of erbium-doped waveguide amplifier and the transmission matrix of waveguide directional coupler. The influence of bend radius, coupling coefficient and doped erbium ion concentration on the characteristics of waveguide ring laser is investigated. It is shown that due to the co-action of waveguide bend loss and other relevant loss there is an optimal bend radius which can provide simultaneously low threshold pumping power and high laser light output power. As one part of the resonator’s loss, the laser light coupling coefficient of directional coupler has an impact on the laser property. The analysis indicates that the laser achieves the high output power when the coupling coefficient is about 0.2. The threshold pumping power is the minimum when the doped erbium ion concentration is 0.85×1026 m-3. Increasing the concentration of doped erbium ions will enhance the output power of laser light as long as the concentration doesn’t introduce remarkable up-conversion effect. The results give a good theoretical basis for the design and fabrication of erbium-doped waveguide ring laser devices.

  18. Piezoresistance in p-type silicon revisited

    DEFF Research Database (Denmark)

    Richter, Jacob; Pedersen, Jesper; Brandbyge, Mads;

    2008-01-01

    We calculate the shear piezocoefficient pi44 in p-type Si with a 6×6 k·p Hamiltonian model using the Boltzmann transport equation in the relaxation-time approximation. Furthermore, we fabricate and characterize p-type silicon piezoresistors embedded in a (001) silicon substrate. We find that the ...

  19. Analysis of influence factors on 2 μm Tm3+-doped fiber laser output characteristics

    Science.gov (United States)

    Yu, Miao; Jin, Guang-yong; Wang, Ji

    2016-10-01

    The affecting factors of 2 μm Tm3+-doped fiber laser output characteristics were theoretical analyzed. On the basis of the energy level structure and optical absorption properties of Tm3+ ion, combining with the basic principle of Tm3+-doped fiber laser, and starting from the energy level structures and the cross relaxation processes of Tm3+ ion, the three pumping methods of Tm doped fiber laser (TDF) were analyzed and discussed. The influences of output characteristics by different influence factors were simulated. Based on optimization of the equations, for different fiber lengths, doping concentrations and pumping absorption coefficients and other influence factors, the laser output characteristics under different conditions were obtained and analyzed. Combination the simulation analysis, through the reasonable design and the selection of the optimum parameters of the laser system, the high laser output performance scan be achieved by improving the injection power and controlling of fiber coil diameter. The influences of different factors on the output characteristics were analyzed in the issue. The high laser output performances can be obtained and the laser loss was reduced by selecting the parameters of the laser system properly.

  20. Surface transfer doping induced effective modulation on ambipolar characteristics of few-layer black phosphorus

    Science.gov (United States)

    Xiang, Du; Han, Cheng; Wu, Jing; Zhong, Shu; Liu, Yiyang; Lin, Jiadan; Zhang, Xue-Ao; Ping Hu, Wen; Özyilmaz, Barbaros; Neto, A. H. Castro; Wee, Andrew Thye Shen; Chen, Wei

    2015-03-01

    Black phosphorus, a fast emerging two-dimensional material, has been configured as field effect transistors, showing a hole-transport-dominated ambipolar characteristic. Here we report an effective modulation on ambipolar characteristics of few-layer black phosphorus transistors through in situ surface functionalization with caesium carbonate (Cs2CO3) and molybdenum trioxide (MoO3), respectively. Cs2CO3 is found to strongly electron dope black phosphorus. The electron mobility of black phosphorus is significantly enhanced to ~27 cm2 V-1 s-1 after 10 nm Cs2CO3 modification, indicating a greatly improved electron-transport behaviour. In contrast, MoO3 decoration demonstrates a giant hole-doping effect. In situ photoelectron spectroscopy characterization reveals significant surface charge transfer occurring at the dopants/black phosphorus interfaces. Moreover, the surface-doped black phosphorus devices exhibit a largely enhanced photodetection behaviour. Our findings coupled with the tunable nature of the surface transfer doping scheme ensure black phosphorus as a promising candidate for further complementary logic electronics.

  1. A new switching characteristics of highly doped multi-quantum well

    CERN Document Server

    Song, C K

    1999-01-01

    A new type of hysteretic current-voltage characteristics, which switched from a low conductance off-state into a high conductance on-state at a threshold voltage and the high conductance state was sustained even when the bias voltage reduced below the threshold voltage, was experimentally observed for the highly doped multi-quantum well structure. The characteristics were attributed to confinement of electrons and impact ionization of the confined electrons out of the quantum wells. The test devices employing 10 periods of quantum wells were fabricated by using AlGaAs/GaAs semiconductor heterostructure and I-V characteristics were examined.

  2. Effect of metal doping on structural characteristics of amorphous carbon system: A first-principles study

    Energy Technology Data Exchange (ETDEWEB)

    Li, Xiaowei; Zhang, Dong [Key Laboratory of Marine Materials and Related Technologies, Key Laboratory of Marine Materials and Protective Technologies of Zhejiang Province, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201 (China); Lee, Kwang-Ryeol, E-mail: krlee@kist.re.kr [Computational Science Center, Korea Institute of Science and Technology, Seoul 136-791 (Korea, Republic of); Wang, Aiying, E-mail: aywang@nimte.ac.cn [Key Laboratory of Marine Materials and Related Technologies, Key Laboratory of Marine Materials and Protective Technologies of Zhejiang Province, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201 (China)

    2016-05-31

    First-principles calculation was performed to investigate the effect of metal doping on the structural characteristics of amorphous carbon system, and the 3d transition metals (TM) were particularly selected as representative case. Results showed that the total energy in TM–C systems caused by distorting the bond angles was reduced distinctly for comparison with that in C–C system. Further electronic structure revealed that as the 3d electrons of doped TM increased, the bond characteristic of highest occupied molecular orbital changed from bonding (Sc, Ti) to nonbonding (V, Cr, Mn, Fe) and finally to antibonding (Co, Ni, Cu) between the TM and C atoms. Meanwhile, the TM–C bond presented a mixture of the covalent and ionic characters. The decrease of strength and directionality of TM–C bonds resulted in the total energy change upon bond angle distortion, which demonstrated that the bond characteristics played an important role in reducing residual stress of TM-doped amorphous carbon systems. - Highlights: • The bond characteristics as 3d electrons changed from bonding, nonbonding to antibonding. • The TM–C bond was a mixture of covalent and ionic characters. • Reduced strength and directionality of TM–C bond led to small distortion energy change. • The weak TM–C bond accounted for the reduced compressive stress caused by TM.

  3. Optical and Surface Characteristics of Mg-Doped GaAs Nanocrystalline Thin Film Deposited by Thermionic Vacuum Arc Technique

    Science.gov (United States)

    Pat, Suat; Özen, Soner; Şenay, Volkan; Korkmaz, Şadan

    2017-01-01

    Magnesium (Mg) is the most promising p-type dopant for gallium arsenide (GaAs) semiconductor technology. Mg-doped GaAs nanocrystalline thin film has been deposited at room temperature by the thermionic vacuum arc technique, a rapid deposition method for production of doped GaAs material. The microstructure and surface and optical properties of the deposited sample were investigated by x-ray diffraction analysis, scanning electron microscopy, energy-dispersive x-ray spectroscopy, atomic force microscopy, ultraviolet-visible spectrophotometry, and interferometry. The crystalline direction of the deposited sample was determined to be (220) plane and (331) plane at 44.53° and 72.30°, respectively. The Mg-doped GaAs nanocrystalline sample showed high transmittance.

  4. Characteristics of Nitrogen Doped Diamond-Like Carbon Films Prepared by Unbalanced Magnetron Sputtering for Electronic Devices.

    Science.gov (United States)

    Lee, Jaehyeong; Choi, Byung Hui; Yun, Jung-Hyun; Park, Yong Seob

    2016-05-01

    Synthetic diamond-like carbon (DLC) is a carbon-based material used mainly in cutting tool coatings and as an abrasive material. The market for DLC has expanded into electronics, optics, and acoustics because of its distinct electrical and optical properties. In this work, n-doped DLC (N:DLC) films were deposited on p-type silicon substrates using an unbalanced magnetron sputtering (UBMS) method. We investigated the effect of the working pressure on the microstructure and electrical properties of n-doped DLC films. The structural properties of N:DLC films were investigated by Raman spectroscopy and SEM-EDX, and the electrical properties of films were investigated by observing the changes in the resistivity and current-voltage (I-V) properties. The N:DLC films prepared by UBMS in this study demonstrated good conducting and physical properties with n-doping.

  5. The local structure and optical absorption characteristic investigation on Fe doped TiO2 nanoparticles

    CERN Document Server

    Zhao, Tianxing; Huang, Junheng; He, Jinfu; Liu, Qinghua; Pan, Zhiyun; Wu, Ziyu

    2014-01-01

    The local structures and optical absorption characteristic of Fe doped TiO2 nanoparticles synthesized by the sol-gel method were characterized by X-ray Diffraction (XRD), X-ray absorption fine structure spectroscopy (XAFS) and UV-Vis absorption spectroscopy (UV-Vis). XRD patterns show that all Fe-doped TiO2 samples have the characteristic anatase structure. Accurate Fe and Ti K-edge EXAFS analysis further reveal that all Fe atoms replace Ti atoms in the anatase lattice. The analysis of UV-Vis data shows a red shift to the visible range. According to the above results, we claim that substitutional Fe atoms lead to the formation of structural defects and new intermediate energy levels appear, narrowing the band gap and extending the optical absorption edge towards the visible region.

  6. Formation of p-type ZnO thin film through co-implantation

    Science.gov (United States)

    Chuang, Yao-Teng; Liou, Jhe-Wei; Woon, Wei-Yen

    2017-01-01

    We present a study on the formation of p-type ZnO thin film through ion implantation. Group V dopants (N, P) with different ionic radii are implanted into chemical vapor deposition grown ZnO thin film on GaN/sapphire substrates prior to thermal activation. It is found that mono-doped ZnO by N+ implantation results in n-type conductivity under thermal activation. Dual-doped ZnO film with a N:P ion implantation dose ratio of 4:1 is found to be p-type under certain thermal activation conditions. Higher p-type activation levels (1019 cm-3) under a wider thermal activation range are found for the N/P dual-doped ZnO film co-implanted by additional oxygen ions. From high resolution x-ray diffraction and x-ray photoelectron spectroscopy it is concluded that the observed p-type conductivities are a result of the promoted formation of PZn-4NO complex defects via the concurrent substitution of nitrogen at oxygen sites and phosphorus at zinc sites. The enhanced solubility and stability of acceptor defects in oxygen co-implanted dual-doped ZnO film are related to the reduction of oxygen vacancy defects at the surface. Our study demonstrates the prospect of the formation of stable p-type ZnO film through co-implantation.

  7. Chemically-doped graphene with improved surface plasmon characteristics: an optical near-field study.

    Science.gov (United States)

    Zheng, Zebo; Wang, Weiliang; Ma, Teng; Deng, Zexiang; Ke, Yanlin; Zhan, Runze; Zou, Qionghui; Ren, Wencai; Chen, Jun; She, Juncong; Zhang, Yu; Liu, Fei; Chen, Huanjun; Deng, Shaozhi; Xu, Ningsheng

    2016-10-01

    One of the most fascinating and important merits of graphene plasmonics is their tunability over a wide range. While chemical doping has proven to be a facile and effective way to create graphene plasmons, most of the previous studies focused on the macroscopic behaviors of the plasmons in chemically-doped graphene and little was known about their nanoscale responses and related mechanisms. Here, to the best of our knowledge, we present the first experimental near-field optical study on chemically-doped graphene with improved surface plasmon characteristics. By using a scattering-type scanning near-field optical microscope (s-SNOM), we managed to show that the graphene plasmons can be tuned and improved using a facile chemical doping method. Specifically, the plasmon interference patterns near the edge of the monolayer graphene were substantially enhanced via nitric acid (HNO3) exposure. The plasmon-related characteristics can be deduced by analyzing such plasmonic fringes, which exhibited a longer plasmon wavelength and reduced plasmon damping rate. In addition, the local carrier density and therefore the Fermi energy level (EF) of graphene can be obtained from the plasmonic nano-imaging, which indicated that the enhanced plasmon oscillation originated from the injection of free holes into graphene by HNO3. These findings were further corroborated by theoretical calculations using density functional theory (DFT). We believe that our findings provide a clear nanoscale picture on improving graphene plasmonics by chemical doping, which will be helpful for optimizing graphene plasmonics and for elucidating the mechanisms of two-dimensional light confinement by atomically thick materials.

  8. Electrochemical characteristics of dodecylbenzene sulfonic acid-doped polyaniline in aqueous solutions

    Energy Technology Data Exchange (ETDEWEB)

    Choi, B.Y. [Korea Electr. Power Res. Inst., Taejon (Korea, Republic of). Power Utilization Group; Chung, I.J. [Department of Chemical Engineering, Korea Advanced Institute of Science and Technology, 373-1 Kusong Yusong, Taejon 305-701 (Korea, Republic of); Chun, J.H.; Ko, J.M. [Department of Industrial Chemistry, Taejon National University of Technology, 305-3, Samsung-2 dong, Dong-gu, Taejon 300-717 (Korea, Republic of)

    1999-02-26

    The electrochemical characteristics of the polyaniline (PAn) films doped with dodecylbenzene sulfonic acid (DBSA) were investigated in aqueous solutions by means of cyclic voltammetry. The PAn-DBSAs film showed a good electrochemical activity in a weak acid solution as well as in a strong acid solution due to the incorporation of small cation instead of DBSA trapped in the film for charge neutralization of polymer matrix. (orig.) 39 refs.

  9. Dual ohmic contact to N- and P-type silicon carbide

    Science.gov (United States)

    Okojie, Robert S. (Inventor)

    2013-01-01

    Simultaneous formation of electrical ohmic contacts to silicon carbide (SiC) semiconductor having donor and acceptor impurities (n- and p-type doping, respectively) is disclosed. The innovation provides for ohmic contacts formed on SiC layers having n- and p-doping at one process step during the fabrication of the semiconductor device. Further, the innovation provides a non-discriminatory, universal ohmic contact to both n- and p-type SiC, enhancing reliability of the specific contact resistivity when operated at temperatures in excess of 600.degree. C.

  10. High surface hole concentration p-type GaN using Mg implantation

    CERN Document Server

    Long Tao; Zhang Guo Yi

    2001-01-01

    Mg ions were implanted on Mg-doped GaN grown by metalorganic chemical vapor deposition (MOCVD). The p-type GaN was achieved with high hole concentration (8.28 x 10 sup 1 sup 7 cm sup - sup 3) conformed by Van derpauw Hall measurement after annealing at 800 degree C for 1 h. this is the first experimental report of Mg implantation on Mg-doped GaN and achieving p-type GaN with high surface hole concentration

  11. Analysis of carrier concentration, lifetime, and electron mobility on p-type HgCdTe

    Science.gov (United States)

    Yoo, Sang Dong; Kwack, Kae Dal

    1998-03-01

    Minority carrier transport characteristics of vacancy-doped p-type HgCdTe such as carrier concentration, lifetime, and mobility are investigated. In the calculation of the carrier concentration two acceptor levels—a donor level and a trap level—were taken into account. The acceptor levels have been described by two models—two independent singly ionized levels and a divalent level with two ionization energies. When each model was examined by calculating electron mobility as a function of temperature, the latter was found to be more accurate. Electron mobility as a function of majority carrier concentration was also presented for both n-type and p-type HgCdTe with 0.225 Cd mole fraction. Steady state electron lifetime was computed assuming the acceptor levels and the trap level would act as Schokley-Read-Hall type recombination centers. The calculated results using the divalent acceptor model were in good agreement with the experimental data.

  12. Atomic layer deposition of undoped TiO2 exhibiting p-type conductivity.

    Science.gov (United States)

    Iancu, Andrei T; Logar, Manca; Park, Joonsuk; Prinz, Fritz B

    2015-03-11

    With prominent photocatalytic applications and widespread use in semiconductor devices, TiO2 is one of the most popular metal oxides. However, despite its popularity, it has yet to achieve its full potential due to a lack of effective methods for achieving p-type conductivity. Here, we show that undoped p-type TiO2 films can be fabricated by atomic layer deposition (ALD) and that their electrical properties can be controlled across a wide range using proper postprocessing anneals in various ambient environments. Hole mobilities larger than 400 cm(2)/(V·s) are accessible superseding the use of extrinsic doping, which generally produces orders of magnitude smaller values. Through a combination of analyses and experiments, we provide evidence that this behavior is primarily due to an excess of oxygen in the films. This discovery enables entirely new categories of TiO2 devices and applications, and unlocks the potential to improve existing ones. TiO2 homojunction diodes fabricated completely by ALD are developed as a demonstration of the utility of these techniques and shown to exhibit useful rectifying characteristics even with minimal processing refinement.

  13. [Study on Spectral Characteristics of Two Kinds of Home-Made Novel Yb-Doped Fluoride Laser Crystals].

    Science.gov (United States)

    Xu, Wen-bin; Chai, Lu; Shi, Jun-kai; Song, You-jian; Hu, Ming-lie; Wang, Qing-yue; Su, Liang-bi; Jiang, Da-peng; Xu, Jun

    2015-09-01

    Yb-doped fluoride crystals are of important another Yb-doped laser materials besides Yb-doped oxide, which are becoming one of interests for developing tunable lasers and ultrafast lasers. In this paper, the systematic and contrastive experiments of the optical spectral characteristics are presented for two types of home-made novel Yb-doped fluoride laser crystals, namely, Yb-doped CaF2-SrF2 mixed crystal and co-doped Yb, Y:CaF2 single crystal. The fluorescent features of Yb-doped CaF2-SrF2 mixed crystal and co-doped Yb, Y:CaF2 single crystal are apparently different by the fluorescence experiment. The physical mechanism of these fluorescence spectra were analyzed and proposed. The influence of doping concentrations of active Yb(3+) ions or co-doping Y ions on the absorption of Yb-doped CaF2-SrF2 mixed crystal and co-doped Yb, Y:CaF2 single crystal was experimentally investigated, and the optimal values of doping concentrations of active Yb(3+) ions or co-doping Y ions in the two types of fluoride laser crystals were obtained. Continuous-wave laser operation for the two novel fluoride laser crystals has been achieved in three-mirror-folded resonator using a laser diode as the pump source. Therein, the laser operation for the co-doped Yb, Y:CaF2 crystal is demonstrated for the first time. For the two types of fluoride laser crystals (four samples), the input-output power relational curves, the optical slope efficiencies and the laser spectra were demonstrated by the laser experiments. By comparisons between the two types of fluoride laser crystals in the absorbability, fluorescence and laser spectra, laser threshold and slope efficiency of the continuous-wave laser operation, the results show that the best one of the four samples in spectral and laser characteristics is co-doped 3at%Yb, 6at% Y:CaF2 single crystal, which has an expected potential in the application. The research results provide available references for improving further laser performance of Yb-doped

  14. Scintillation characteristics of undoped and Cu+-doped Li2B4O7 single crystals

    CERN Document Server

    Kobayashi, Masaaki; Senguttuvan, Nachimuthu

    2015-01-01

    Scintillation characteristics of undoped and Cu+-doped lithium tetraborate Li2B4O7 (LTB) were studied including optical transmittance, photoluminescence, radioluminescence for X- and gamma-rays, alpha/gamma ratio, and decay kinetics. The total time-integrated LYs in undoped and Cu+-doped LTB for X-rays are ~600 and ~760 ph/MeV (photons/MeV), respectively. The decay kinetics in undoped and Cu+-doped LTB are similar to each other. Typical decay spectra for pulsed X-rays can be fitted with four exponentials: for fast (t1~0.8 ns, t2~25-50 ns), medium (t3~300-400 ns), and slow (t4~20-30 ms) components. The slow component occupies about 60% of the total LY, while the fast ones less than 10%. The 10-90% rise time was 163 ps. The alpha/gamma ratio was 0.18 for external 241Am alpha-rays. The obtained increase in LY due to Cu+ doping remains modest. The Cu+-induced emission contains both fast and slow components, requiring further studies of the emission mechanism to explain the fast component.

  15. The Field Emission Characteristics of Titanium-Doped Nano-Diamonds

    Institute of Scientific and Technical Information of China (English)

    YANG Yan-Ning; ZHANG Zhi-Yong; ZHANG Fu-Chun; DONG Jun-Tang; ZHAO Wu; ZHAI Chun-Xue; ZHANG Wei-Hu

    2012-01-01

    An electrophoresis solution,prepared in a specific ratio of titanium (Ti)-doped nano-diamond,is dispersed by ultrasound and the nano-diamond coating is then deposited on a polished Ti substrate by electrophoresis.After high-temperature vacuum annealing,the appearance of the surface and the microstructures of the coating are observed by a metallomicroscope,scanning electron microscopy and Raman spectroscopy.The field emission characteristics and luminescence features are also tested,and the mechanism of the field emission characteristics of the Ti-doped nano-diamond is analyzed.The experimental results show that under the same conditions,the diamond-coated surface (by deposition) is more uniform after doping with 5 mg of Ti powder.Compared with the undoped nano-diamond cathode,the turn-on fields decline from 6.95 to 5.95 V/μm.When the electric field strength is 13.80 V/μm,the field emission current density increases to 130.00 μA/cm2.Under the applied fields,the emission current is stable and the luminescence is at its best,while the field emission characteristics of the 10 mg Ti-doped coating become worse,as does the luminescence.The reason for this could be that an excessive amount of TiC is generated on the surface of the coating.%An electrophoresis solution, prepared in a speciGc ratio of titanium (Ti)-doped nano-diamond, is dispersed by ultrasound and the nano-diamond coating is then deposited on a polished Ti substrate by electrophoresis. After high-temperature vacuum annealing, the appearance of the surface and the microstructures of the coating are observed by a metallomicroscope, scanning electron microscopy and Raman spectroscopy. The field emission characteristics and luminescence features are also tested, and the mechanism of the field emission characteristics of the Ti-doped nano-diamond is analyzed. The experimental results show that under the same conditions, the diamond-coated surface (by deposition) is more uniform after doping with 5 mg of Ti

  16. Evolution of plant P-type ATPases

    Directory of Open Access Journals (Sweden)

    Christian N.S. Pedersen

    2012-02-01

    Full Text Available Five organisms having completely sequenced genomes and belonging to all major branches of green plants (Viridiplantae were analyzed with respect to their content of P-type ATPases encoding genes. These were the chlorophytes Ostreococcus tauria and Chlamydomonas reinhardtii, and the streptophytes Physcomitrella patens (a moss, Selaginella moellendorffii (a primitive vascular plant, and Arabidopsis thaliana (a model flowering plant. Each organism contained sequences for all five subfamilies of P-type ATPases. Our analysis demonstrates when specific subgroups of P-type ATPases disappeared in the evolution of Angiosperms. Na/K-pump related P2C ATPases were lost with the evolution of streptophytes whereas Na+ or K+ pumping P2D ATPases and secretory pathway Ca2+-ATPases remained until mosses. An N-terminally located calmodulin binding domain in P2B ATPases can only be detected in pumps from Streptophytae, whereas, like in animals, a C-terminally localized calmodulin binding domain might be present in chlorophyte P2B Ca2+-ATPases. Chlorophyte genomes encode P3A ATPases resembling protist plasma membrane H+-ATPases and a C-terminal regulatory domain is missing. The complete inventory of P-type ATPases in the major branches of Viridiplantae is an important starting point for elucidating the evolution in plants of these important pumps.

  17. Structural Characteristics & Dielectric Properties of Tantalum Oxide Doped Barium Titanate Based Materials

    Directory of Open Access Journals (Sweden)

    Rubayyat Mahbub

    2012-11-01

    Full Text Available In this research, the causal relationship between the dielectric properties and the structural characteristics of 0.5 & 1.0 mol% Ta2O5 doped BaTiO3 based ceramic materials were investigated under different sintering conditions. Dielectric properties and microstructure of BaTio3 ceramics were significantly influenced by the addition of a small amount of Ta2O5. Dielectric properties were investigated by measuring the dielectric constant (k as a function of temperature and frequency. Percent theoretical density (%TD above 90% was achieved for 0.5 and 1.0 mol% Ta2O5 doped BaTiO3. It was observed that the grain size decreased markedly above a doping concentration of 0·5 mol% Ta2O5. Although fine grain size down to 200-300nm was attained, grain sizes in the range of 1-1.8µm showed the most alluring properties. The fine-grain quality and high density of the Ta2O5 doped BaTiO3 ceramic resulted in tenfold increase of dielectric constant. Stable value of dielectric constant as high as 13000-14000 was found in the temperature range of  55 to 80°C, for 1.0 mol% Ta2O5 doped samples with corresponding shift of Curie point to ~82°C. Experiments divulged that incorporation of a proper content of Ta2O5 in BaTiO3 could control the grain growth, shift the Curie temperature and hence significantly improve the dielectric property of the BaTiO3 ceramics.

  18. STRUCTURAL CHARACTERISTICS & DIELECTRIC PROPERTIES OF TANTALUM OXIDE DOPED BARIUM TITANATE BASED MATERIALS

    Directory of Open Access Journals (Sweden)

    Md. Fakhrul Islam

    2013-01-01

    Full Text Available In this research, the causal relationship between the dielectric properties and the structural characteristics of 0.5 & 1.0 mole % Ta2O5 doped BaTiO3 based ceramic materials were investigated under different sintering conditions. Dielectric properties and microstructure of BaTio3 ceramics were significantly influenced by the addition of a small amount of Ta2O5. Dielectric properties were investigated by measuring the dielectric constant (k as a function of temperature and frequency. Percent theoretical density (%TD above 90 % was achieved for 0.5 and 1.0 mole %Ta2O5 doped BaTiO3. It was observed that the grain size decreased markedly above a doping concentration of 0.5 mole % Ta2O5. Although fine grain size down to 200 - 300 nm was attained, grain sizes in the range of 1-1.8µm showed the most alluring properties. The fine-grain quality and high density of the Ta2O5 doped BaTiO3 ceramic resulted in tenfold increase of dielectric constant. Stable value of dielectric constant as high as 13000 - 14000 was found in the temperature range of 55 to 80 °C, for 1.0 mole % Ta2O5 doped samples with corresponding shift of Curie point to ~82 °C. Experiments divulged that incorporation of a proper content of Ta2O5 in BaTiO3 could control the grain growth, shift the Curie temperature and hence significantly improve the dielectric property of the BaTiO3 ceramics.

  19. Effects of Dislocation on High Temperature Transport Characteristics of Unintentionally Doped GaN

    Institute of Scientific and Technical Information of China (English)

    WANG Mao-Jun; SHEN Bo; XU Fu-Jun; WANG Yan; XU Jian; HUANG Sen; YANG Zhi-Jian; QIN Zhi-Xin; ZHANG Guo-Yi

    2007-01-01

    High temperature transport characteristics of unintentionally doped GaN have been investigated by means of high temperature Hall measurements from room temperature to 50CPC. The increment of electron concentration from room temperature to 500°C is found to vary largely for different samples. The dispersion of temperature dependence of electron concentration is found to be directly proportional to the density of dislocations in GaN layers calculated by fitting the FWHM of the rocking curves in x-ray diffraction measurements (XRD). The buildup levels in persistent photoconductivity (PPC) are also shown to be directly proportional to the density of dislocations. The correlation of XRD, Hall and PPC results indicate that the high temperature dependence of electron density in unintentional doped GaN is directly dislocation related.

  20. Characteristics of W Doped Nanocrystalline Carbon Films Prepared by Unbalanced Magnetron Sputtering.

    Science.gov (United States)

    Park, Yong Seob; Park, Chul Min; Kim, Nam-Hoon; Kim, Jae-Moon

    2016-05-01

    Nanocrystalline tungsten doped carbon (WC) films were prepared by unbalanced magnetron sputtering. Tungsten was used as the doping material in carbon thin films with the aim of application as a contact strip in an electric railway. The structural, physical, and electrical properties of the fabricated WC films with various DC bias voltages were investigated. The films had a uniform and smooth surface. Hardness and frication characteristics of the films were improved, and the resistivity and sheet resistance decreased with increasing negative DC bias voltage. These results are associated with the nanocrystalline WC phase and sp(2) clusters in carbon networks increased by ion bombardment enhanced with increasing DC bias voltage. Consequently, the increase of sp(2) clusters containing WC nanocrystalline in the carbon films is attributed to the improvement in the physical and electrical properties.

  1. Electrical property studies on chemically processed polypyrolle/aluminum doped ZnO based hybrid heterostructures

    Science.gov (United States)

    Mohan Kumar, G.; Ilanchezhiyan, P.; Madhan Kumar, A.; Yuldashev, Sh. U.; Kang, T. W.

    2016-04-01

    A hybrid structure based on p-type polypyrolle (PPy) and n-type aluminum (Al) doped ZnO nanorods was successfully constructed. The effect of Al doping on material properties of wurtzite structured ZnO were studied using several analytical techniques. To establish the desired hybrid structure, pyrrole monomers were polymerized on hydrothermally grown Al doped ZnO nanorods by chemical polymerization. The current⿿voltage characteristics on the fabricated PPy/Al doped ZnO heterostructures were found to exhibit excellent rectifying characteristics under dark and illumination conditions. The obtained results augment the prescribed architecture to be highly suitable for high-sensitivity optoelectronic applications.

  2. STURCTURAL CHARACTERISTICS AND QUANTUM CHEMISTRY CALCULATION OF Al-DOPED BORON CARBIDES

    Institute of Scientific and Technical Information of China (English)

    2000-01-01

    Structural characteristics, chemical bonds and thermoelectric properties of Al-doped boron carbides are studied through calculations of various structural unit models by using a self-consistent-field discrete variation Xα method. The calculations show that Al atom doped in boron carbide is in preference to substituting B or C atoms on the end of boron carbide chain, and then may occupy interstitial sites, but it is difficult for Al to substitute B or C atom in the centers of the chain or in the icosahedra. A representative structural unit containing an Al atom is [C-B-Al]ε+-[B11C]ε-, while the structural unit without Al is [C-B-B(C)]ε--[B11C]ε+, and the coexistence of these two different structural units makes the electrical conductivity increased. As the covalent bond of Al-B or Al-C is weaker than that of B-B or B-C, the thermal conductivity decreases when Al is added into boron carbides. With the electrical conductivity increasing and the thermal conductivity decreases, Al doping has significant effect on thermoelectric properties of boron carbides.

  3. Electronic processes in uniaxially stressed p-type germanium

    Energy Technology Data Exchange (ETDEWEB)

    Dubon, Jr., Oscar Danilo [Univ. of California, Berkeley, CA (United States)

    1996-02-01

    Effect of uniaxial stress on acceptor-related electronic processes in Ge single crystals doped with Ga, Be, and Cu were studied by Hall and photo-Hall effect measurements in conjunction with infrared spectroscopy. Stress dependence of hole lifetime in p-type Ge single crystals is used as a test for competing models of non-radiative capture of holes by acceptors. Photo-Hall effect shows that hole lifetime in Ga- and Be-doped Ge increases by over one order of magnitude with uniaxial stress at liq. He temps. Photo-Hall of Ge:Be shows a stress-induced change in the temperature dependence of hole lifetime. This is consistent with observed increase of responsivity of Ge:Ga detectors with uniaxial stress. Electronic properties of Ge:Cu are shown to change dramatically with uniaxial stress; the results provide a first explanation for the performance of uniaxially stressed, Cu-diffused Ge:Ga detectors which display a high conductivity in absence of photon signal and therefore have poor sensitivity.

  4. Pulse formation and characteristics of the cw mode-locked titanium-doped sapphire laser

    Science.gov (United States)

    Zschocke, Wolfgang; Stamm, Uwe; Heumann, Ernst; Ledig, Mario; Guenzel, Uwe; Kvapil, Jiri; Koselja, Michael P.; Kubelka, Jiri

    1991-10-01

    We report on measurements of transient and steady-state pulse characteristics of an acousto- optically mode-locked titanium-doped sapphire laser. During the pulse evolution, oscillations in the pulse width and pulse energy are found. A steady state is reached after about 40 to 60 microsecond(s) . The steady-state pulse width is strongly influenced by the mode-locking loss as well as the intracavity bandwidth. Shortest pulses of typically 15 ps are obtained. The experiment is compared with results of a simple computer simulation.

  5. pH-Sensing Characteristics of Hydrothermal Al-Doped ZnO Nanostructures

    OpenAIRE

    Jyh-Liang Wang; Po-Yu Yang; Tsang-Yen Hsieh; Chuan-Chou Hwang; Miin-Horng Juang

    2013-01-01

    Highly sensitive and stable pH-sensing properties of an extended-gate field-effect transistor (EGFET) based on the aluminum-doped ZnO (AZO) nanostructures have been demonstrated. The AZO nanostructures with different Al concentrations were synthesized on AZO/glass substrate via a simple hydrothermal growth method at 85°C. The AZO sensing nanostructures were connected with the metal-oxide-semiconductor field-effect transistor (MOSFET). Afterwards, the current-voltage (I-V) characteristics and ...

  6. The effect of Bi{sup 3+} and Li{sup +} co-doping on the luminescence characteristics of Eu{sup 3+}-doped aluminum oxide films

    Energy Technology Data Exchange (ETDEWEB)

    Padilla-Rosales, I., E-mail: ipadilla@cinvestav.mx [Centro de Investigación y de Estudios Avanzados del IPN, Nanociencias y Nanotecnología, Av. IPN 2508, Col. San Pedro Zacatenco, CP 07360 México D.F. (Mexico); Martinez-Martinez, R. [Instituto de Física y Matemáticas, Universidad Tecnológica de la Mixteca, Carretera a Acatlima Km. 2.5, CP 69000 Huajuapan de León, Oax, México (Mexico); Cabañas, G. [Centro de Investigación y de Estudios Avanzados del IPN, Nanociencias y Nanotecnología, Av. IPN 2508, Col. San Pedro Zacatenco, CP 07360 México D.F. (Mexico); Falcony, C. [Centro de Investigación y de Estudios Avanzados del IPN, Departamento de Física, Av. IPN 2508, Col. San Pedro Zacatenco, CP 07360 México D.F. (Mexico)

    2015-09-15

    The incorporation of Bi{sup 3+} and Li{sup +} as co-dopants in Eu{sup 3+}-doped aluminum oxide films deposited by the ultrasonic spray pyrolysis technique and its effect on the luminescence characteristics of this material are described. Both Bi{sup 3+} and Li{sup +} do not introduce new luminescence features but affect the luminescence intensity of the Eu{sup 3+} related emission spectra as well as the excitation spectra. The introduction of Bi{sup 3+} generates localized states in the aluminum oxide host that result in a quenching of the luminescence intensity, while Li{sup +} and Bi{sup 3+} co-doping increase the luminescence intensity of these films. - Highlights: • Li and Bi co-doping increase the luminescence. • Bi creates localized states in the Al{sub 2}O{sub 3} host. • Li was incorporated as a co-activator.

  7. Photoelectric characteristics of an inverse U-shape buried doping design for crosstalk suppression in pinned photodiodes

    Institute of Scientific and Technical Information of China (English)

    Cao Chen; Zhang Bing; Li Xin; Wu Longsheng; Wang Junfeng

    2014-01-01

    A design of an inverse U-shape buried doping in a pinned photodiode (PPD) of CMOS image sensors is proposed for electrical crosstalk suppression between adjacent pixels.The architecture achieves no extra fill factor consumption,and proper built-in electric fields can be established according to the doping gradient created by the injections of the extremely low P-type doping buried regions in the epitaxial layer,causing the excess electrons to easily drift back to the photosensitive area rarely with a diffusion probability; the overall junction capacitance and photosensitive area extensions for a full well capacity (FWC) and internal quantum efficiency (IQE) improving are achieved by the injection of a buried N-type doping.By considering the image lag issue,the process parameters of all the injections have been precisely optimized.Optical simulation results based on the finite difference time domain method show that compared to the conventional PPD,the electrical crosstalk rate of the proposed architecture can be decreased by 60%-80% at an incident wavelength beyond 450 nm,IQE can be clearly improved at an incident wavelength between 400 and 600 nm,and the FWC can be enhanced by 107.5%.Furthermore,the image lag performance is sustained to a perfect low level.The present study provides important guidance on the design of ultra high resolution image sensors.

  8. Origin of the p-type character of AuCl3 functionalized carbon nanotubes

    KAUST Repository

    Murat, Altynbek

    2014-02-13

    The microscopic origin of the p-type character of AuCl3 functionalized carbon nanotubes (CNTs) is investigated using first-principles self-interaction corrected density functional theory (DFT). Recent DFT calculations suggest that the p-type character of AuCl3 functionalized CNTs is due to the Cl atoms adsorbed on the CNTs. We test this hypothesis and show that adsorbed Cl atoms only lead to a p-type character for very specific concentrations and arrangements of the Cl atoms, which furthermore are not the lowest energy configurations. We therefore investigate alternative mechanisms and conclude that the p-type character is due to the adsorption of AuCl4 molecules. The unraveling of the exact nature of the p-doping adsorbates is a key step for further development of AuCl3 functionalized CNTs in water sensor applications. © 2014 American Chemical Society.

  9. Electromagnetic and optical characteristics of Nb5+-doped double-crossover and salmon DNA thin films

    Science.gov (United States)

    Babu Mitta, Sekhar; Reddy Dugasani, Sreekantha; Jung, Soon-Gil; Vellampatti, Srivithya; Park, Tuson; Park, Sung Ha

    2017-10-01

    We report the fabrication and physical characteristics of niobium ion (Nb5+)-doped double-crossover DNA (DX-DNA) and salmon DNA (SDNA) thin films. Different concentrations of Nb5+ ([Nb5+]) are coordinated into the DNA molecules, and the thin films are fabricated via substrate-assisted growth (DX-DNA) and drop-casting (SDNA) on oxygen plasma treated substrates. We conducted atomic force microscopy to estimate the optimum concentration of Nb5+ ([Nb5+]O = 0.08 mM) in Nb5+-doped DX-DNA thin films, up to which the DX-DNA lattices maintain their structures without deformation. X-ray photoelectron spectroscopy (XPS) was performed to probe the chemical nature of the intercalated Nb5+ in the SDNA thin films. The change in peak intensities and the shift in binding energy were witnessed in XPS spectra to explicate the binding and charge transfer mechanisms between Nb5+ and SDNA molecules. UV-visible, Raman, and photoluminescence (PL) spectra were measured to determine the optical properties and thus investigate the binding modes, Nb5+ coordination sites in Nb5+-doped SDNA thin films, and energy transfer mechanisms, respectively. As [Nb5+] increases, the absorbance peak intensities monotonically increase until ∼[Nb5+]O and then decrease. However, from the Raman measurements, the peak intensities gradually decrease with an increase in [Nb5+] to reveal the binding mechanism and binding sites of metal ions in the SDNA molecules. From the PL, we observe the emission intensities to reduce them at up to ∼[Nb5+]O and then increase after that, expecting the energy transfer between the Nb5+ and SDNA molecules. The current–voltage measurement shows a significant increase in the current observed as [Nb5+] increases in the SDNA thin films when compared to that of pristine SDNA thin films. Finally, we investigate the temperature dependent magnetization in which the Nb5+-doped SDNA thin films reveal weak ferromagnetism due to the existence of tiny magnetic dipoles in the Nb5+-doped

  10. Improved breakdown characteristics of monolithically integrated III-nitride HEMT-LED devices using carbon doping

    Science.gov (United States)

    Liu, Chao; Liu, Zhaojun; Huang, Tongde; Ma, Jun; May Lau, Kei

    2015-03-01

    We report selective growth of AlGaN/GaN high electron mobility transistors (HEMTs) on InGaN/GaN light emitting diodes (LEDs) for monolithic integration of III-nitride HEMT and LED devices (HEMT-LED). To improve the breakdown characteristics of the integrated HEMT-LED devices, carbon doping was introduced in the HEMT buffer by controlling the growth pressure and V/III ratio. The breakdown voltage of the fabricated HEMTs grown on LEDs was enhanced, without degradation of the HEMT DC performance. The improved breakdown characteristics can be attributed to better isolation of the HEMT from the underlying conductive p-GaN layer of the LED structure.

  11. Eradication of Multi-drug Resistant Bacteria by Ni Doped ZnO Nanorods: Structural, Raman and optical characteristics

    Energy Technology Data Exchange (ETDEWEB)

    Jan, Tariq [Laboratory of Nanoscience and Technology, Department of Physics, International Islamic University Islamabad (Pakistan); Iqbal, Javed, E-mail: javed.saggu@iiu.edu.pk [Laboratory of Nanoscience and Technology, Department of Physics, International Islamic University Islamabad (Pakistan); Ismail, Muhammad; Mansoor, Qaisar [Institute of Biomedical and Genetic Engineering (IBGE), Islamabad (Pakistan); Mahmood, Arshad [Nano Devices Labs, National Institute of Lasers and Optronics (NILOP), Islamabad (Pakistan); Ahmad, Amaar [Laboratory of Nanoscience and Technology, Department of Physics, International Islamic University Islamabad (Pakistan)

    2014-07-01

    In this paper, ZnO nanorods doped with varying amounts of Ni have been prepared by chemical co-precipitation technique. Structural investigations provide the evidence that Ni is successfully doped into ZnO host matrix without having any secondary phases. Scanning electron microscopy (SEM) images reveal the formation of rodlike structure of undoped ZnO with average length and diameter of 1 μm and 80 nm, respectively. Raman spectroscopy results show that the E{sub 1}{sup LO} phonons mode band shifts to the higher values with Ni doping, which is attributed to large amount of crystal defects. Ni doping is also found to greatly influence the optical properties of ZnO nanorods. The influence of Ni doping on antibacterial characteristics of ZnO nanorods have been studied by measuring the growth curves of Escherichia coli (E. coli), Methicillin-resistant Staphylococcus aureus (S. aureus) and Pseudomonas aeruginosa (P. aeruginosa) bacteria in the presence of prepared nanorods. ZnO nanorods antibacterial potency is found to increase remarkably with Ni doping against S. aureus and P. aeruginosa microbials, which might possibly be due to the increase in reactive oxygen species (ROS) generation. Interestingly, it is observed that Ni doped ZnO nanorods completely eradicates these multi-drug resistant bacteria.

  12. Improving the Photoelectric Characteristics of MoS2 Thin Films by Doping Rare Earth Element Erbium

    Science.gov (United States)

    Meng, Miaofei; Ma, Xiying

    2016-11-01

    We investigated the surface morphologies, crystal structures, and optical characteristics of rare earth element erbium (Er)-doped MoS2 (Er: MoS2) thin films fabricated on Si substrates via chemical vapor deposition (CVD). The surface mopography, crystalline structure, light absorption property, and the photoelectronic characteristics of the Er: MoS2 films were studied. The results indicate that doping makes the crystallinity of MoS2 films better than that of the undoped film. Meanwhile, the electron mobility and conductivity of the Er-doped MoS2 films increase about one order of magnitude, and the current-voltage ( I- V) and the photoelectric response characteristics of the Er:MoS2/Si heterojunction increase significantly. Moreover, Er-doped MoS2 films exhibit strong light absorption and photoluminescence in the visible light range at room temperature; the intensity is enhanced by about twice that of the undoped film. The results indicate that the doping of MoS2 with Er can significantly improve the photoelectric characteristics and can be used to fabricate highly efficient luminescence and optoelectronic devices.

  13. Thermal and radiative characteristics of oxyfluoride glass singly doped with lanthanide ions

    Institute of Scientific and Technical Information of China (English)

    Barbara; Gra(z)yna; DOMINIAK-DZIK; RYBA-ROMANOWSKI

    2010-01-01

    Rare earths-doped oxyfluoride glasses based on germanium oxide and lead fluoride were prepared from commercial raw materials.The glasses with general composition of 50GeO2-(50-x-y)PbO-yPbF2-xLnF3(Ln=Pr3+-Yb3+),contained different concentrations of optically active dopants(x=0.2 mol.% and 2 mol.%)and PbF2(y≤15 mol.%).The differential thermal analysis(DTA)was used to determine both thermal characteristic and thermal stability properties of the glasses in the function of the kind of dopant,its concentration,and a glass composition.Characteristic glass temperatures such as glass transition temperature(Tg),glass crystallization temperature(Tc)and temperature corresponding to the maximum of the crystallization rate(Tpc)were evaluated.On the basis of obtained results,the thermal stabilities of glasses under study were evaluated using various thermal stability criteria(Dietzel factor △T,Saad-Poulain factors H' and S').It was found that the increase in rare earth fluoride contents influenced thermal characteristics when the characteristic temperatures of the individual glass was shifted towards higher values.The effect of the PbF2 content and the kind of rare earth impurity on the glass stability was observed.Absorption spectra of lanthanide-doped glasses were measured at room temperature and used to determine the phenomenological intensity parameters Ωt and next,to estimate radiative properties of lanthanide ions in this matrix.Radiative transition probabilities of luminescent states of Ln3+,branching ratios and radiative lifetimes were determined.The variation of the Ωt along the lanthanide series was presented and discussed.

  14. Charge storage characteristics and tunneling mechanism of amorphous Ge-doped HfO{sub x} films

    Energy Technology Data Exchange (ETDEWEB)

    Qiu, X.Y.; Zhang, S.Y.; Zhang, T.; Wang, R.X.; Li, L.T.; Zhang, Y. [Southwest University, School of Physical Science and Technology, Chongqing (China); Dai, J.Y. [The Hong Kong Polytechnic University, Department of Applied Physics, Hong Kong (China)

    2016-09-15

    Amorphous Ge-doped HfO{sub x} films have been deposited on p-Si(100) substrates by means of RF magnetron sputtering. Microstructural investigations reveal the partial oxidation of doped Ge atoms in the amorphous HfO{sub x} matrix and the existence of HfSiO{sub x} interfacial layer. Capacitance-voltage hysteresis of the Ag-/Ge-doped HfO{sub x}/Si/Ag memory capacitor exhibits a memory window of 3.15 V which can maintain for >5 x 10{sup 4} cycles. Current-voltage characteristics reveal that Poole-Frenkel tunneling is responsible for electron transport in the Ge-doped HfO{sub x} film. (orig.)

  15. Characteristic analysis on the physical properties of nanostructured Mg-doped CdO thin films-Doping concentration effect

    Institute of Scientific and Technical Information of China (English)

    K. Usharani; A.R. Balu; V.S. Nagarethinam; M. Suganya

    2015-01-01

    Highly conductive and transparent magnesium-doped cadmium oxide (CdO:Mg) thin films have been deposited on suitably cleaned glass substrates maintained at 375 1C by spray pyrolysis technique using perfume atomizer. The magnesium content in the films is varied from 0 to 8 at%in steps of 2 at%. The effect of Mg doping on the structural, morphological, optical and electrical properties of the CdO thin films has been studied. All the films exhibited cubic structure with a preferential orientation along the (1 1 1) plane irrespective of the Mg doping level. SEM analysis showed that the film morphology modifies from spherical shaped grains to closely packed cauliflower shaped nanostructures with Mg doping. Except for the film coated with 2 at%Mg dopant, all the other doped films exhibited a blue shift in the optical band gap. Electrical studies revealed that the CdO:Mg film coated with 8 at%Mg dopant had a minimum resistivity of 0.0853 ? 101Ω-cm.

  16. Characteristic analysis on the physical properties of nanostructured Mg-doped CdO thin films—Doping concentration effect

    Directory of Open Access Journals (Sweden)

    K. Usharani

    2015-06-01

    Full Text Available Highly conductive and transparent magnesium-doped cadmium oxide (CdO:Mg thin films have been deposited on suitably cleaned glass substrates maintained at 375 °C by spray pyrolysis technique using perfume atomizer. The magnesium content in the films is varied from 0 to 8 at% in steps of 2 at%. The effect of Mg doping on the structural, morphological, optical and electrical properties of the CdO thin films has been studied. All the films exhibited cubic structure with a preferential orientation along the (1 1 1 plane irrespective of the Mg doping level. SEM analysis showed that the film morphology modifies from spherical shaped grains to closely packed cauliflower shaped nanostructures with Mg doping. Except for the film coated with 2 at% Mg dopant, all the other doped films exhibited a blue shift in the optical band gap. Electrical studies revealed that the CdO:Mg film coated with 8 at% Mg dopant had a minimum resistivity of 0.0853×101 Ω-cm.

  17. P–n junction diodes with polarization induced p-type graded In x Ga1–x N layer

    Science.gov (United States)

    Enatsu, Yuuki; Gupta, Chirag; Keller, Stacia; Nakamura, Shuji; Mishra, Umesh K.

    2017-10-01

    In this study, p–n junction diodes with polarization induced p-type layer are demonstrated on Ga polar (0001) bulk GaN substrates. A quasi-p-type region is obtained by linearly grading the indium composition in un-doped In x Ga1–x N layers from 0% to 5%, taking advantage of the piezoelectric and spontaneous polarization fields which exist in group III-nitride heterostructures grown in the typical (0001) or c-direction. The un-doped graded In x Ga1–x N layers needed to be capped with a thin Mg-doped In x Ga1–x N layer to make good ohmic contacts and to reduce the on-resistance of the p–n diodes. The Pol-p–n junction diodes exhibited similar characteristics compared to reference samples with traditional p-GaN:Mg layers. A rise in breakdown voltage from 30 to 110 V was observed when the thickness of the graded InGaN layer was increased from 100 to 600 nm at the same grade composition.

  18. Radiotherapy dosimetry and the thermoluminescence characteristics of Ge-doped fibres of differing germanium dopant concentration and outer diameter

    Science.gov (United States)

    Noor, N. Mohd; Fadzil, M. S. Ahmad; Ung, N. M.; Maah, M. J.; Mahdiraji, G. A.; Abdul-Rashid, H. A.; Bradley, D. A.

    2016-09-01

    We examine the influence of elevated dopant concentration on the thermoluminescence characteristics of novel Ge-doped silica fibres. Basic dosimetric characteristics of the TL media were obtained, including linearity, reproducibility, energy dependence, fading, minimum detectable dose and glow curve analysis, use being made of a 60Co gamma irradiation facility (mean energy 1.25 MeV) and an electron linear accelerator producing photons at an accelerating potential of 6 and 10 MV. The 6 mol% Ge-doped fibres were found to provide TL response superior to that of 8- and 10 mol% Ge-doped fibres, both for fibres with outer diameter of 241 μm and 604 μm. Concerning reproducibility, obtained under three different test conditions, at days post irradiation; the 6 mol% Ge doped cylindrical fibres showed the least TL signal loss, at 21% for the 241 μm cylindrical fibre and <40% for the 604 μm cylindrical fibres. The results also revealed that the 6 mol% optical fibres provided the lowest minimum detectable dose, at 0.027 Gy for 6 MV photon beams. Evaluations of these characteristics are supporting development of novel Ge-doped optical fibres for dosimetry in radiotherapy.

  19. Spin transport in p-type germanium.

    Science.gov (United States)

    Rortais, F; Oyarzún, S; Bottegoni, F; Rojas-Sánchez, J-C; Laczkowski, P; Ferrari, A; Vergnaud, C; Ducruet, C; Beigné, C; Reyren, N; Marty, A; Attané, J-P; Vila, L; Gambarelli, S; Widiez, J; Ciccacci, F; Jaffrès, H; George, J-M; Jamet, M

    2016-04-27

    We report on the spin transport properties in p-doped germanium (Ge-p) using low temperature magnetoresistance measurements, electrical spin injection from a ferromagnetic metal and the spin pumping-inverse spin Hall effect method. Electrical spin injection is carried out using three-terminal measurements and the Hanle effect. In the 2-20 K temperature range, weak antilocalization and the Hanle effect provide the same spin lifetime in the germanium valence band (≈1 ps) in agreement with predicted values and previous optical measurements. These results, combined with dynamical spin injection by spin pumping and the inverse spin Hall effect, demonstrate successful spin accumulation in Ge. We also estimate the spin Hall angle θ(SHE) in Ge-p (6-7 x 10(-4) at room temperature, pointing out the essential role of ionized impurities in spin dependent scattering.

  20. Doping-level dependences of switching speeds and the retention characteristics of resistive switching Pt/SrTiO{sub 3} junctions

    Energy Technology Data Exchange (ETDEWEB)

    Gwon, Minji; Lee, Eunsongyi; Sohn, Ahrum; Bourim, El Mostafa; Kim, Dong-Wook [Ewha Womans University, Seoul (Korea, Republic of)

    2010-12-15

    We investigated the resistive switching behaviors of metal/oxide junctions consisting of Pt electrodes and Nb-doped SrTiO{sub 3}(001) single crystals. The doping level affected the resistive switching ratio and the transport mechanism (thermionic emission for low doping and thermionic field emission for high doping). Pulse-mode switching experiments showed that an increase in the interface electric field by several times could enhance the switching speed by hundreds of times. The dependence of the retention time on the doping ratio was also examined. All the results suggested that ionic migration and carrier trapping could explain the resistive switching characteristics.

  1. High magneto-optical characteristics of Holmium-doped terbium gallium garnet crystal.

    Science.gov (United States)

    Chen, Zhe; Yang, Lei; Wang, Xiangyong; Yin, Hang

    2016-06-01

    Magneto-optical characteristics of a new magneto-active material, (Tb(1-x)Hox)3Ga5O12 crystal, have been grown by the Czochralski (Cz) method. A high value of the Verdet constant was obtained at room temperature-namely, 214.9 and 77.8  rad·m-1 T-1 for 632.8 and 1064 nm, respectively. The Verdet constant of the Ho-doped terbium gallium garnet crystal at 1064 nm is about 2 times higher than that of terbium gallium garnet crystal. High value of magneto-optical figure-of-merit makes it an attractive next-generation magneto-optics material for high-power Faraday isolators.

  2. Occurence of active layer optical properties on some Lasing characteristics dye-doped Ch LC

    CERN Document Server

    Ilchishin, I

    2010-01-01

    Effect of a planar texture quality and its thickness on lasing spectrums and thresholds in dye-doped cholesteric liquid crystal (CLC) of steroid type is explored. Transition from the qualitative planar texture to the poor texture quality is accompanied by change of characteristic mode structures and by shift of barycentre in the long-wave side and the considerable growth of the lasing threshold. It is found that in the CLC texture created by substrates with perpendicular directions of orientation the stable single-mode lasing takes place. The nature of oscillated modes in such texture is caused by phase jump. The gained results show that in steroid CLC, unlike induced one, lasing spectrums is possible to feature with the coupled wave model. Key words: steroidal cholesteric liquid crystal, distributed feedback lasing, oscillation thresholds, phase defect of periodical structure, transmission and lasing spectra

  3. CCE measurements and annealing studies on proton-irradiated p-type MCz silicon diodes

    CERN Document Server

    Hoedlmoser, H; Köhler, M; Nordlund, H

    2007-01-01

    Magnetic Czochralski (MCz) silicon has recently been investigated for the development of radiation tolerant detectors for future high-luminosity HEP experiments. A study of p-type MCz Silicon diodes irradiated with protons up to a fluence of has been performed by means of Charge Collection Efficiency (CCE) measurements as well as standard CV/IV characterizations. The changes of CCE, full depletion voltage and leakage current as a function of fluence are reported. A subsequent annealing study of the irradiated detectors shows an increase in effective doping concentration and a decrease in the leakage current, whereas the CCE remains basically unchanged. Two different series of detectors have been compared differing in the implantation dose of p-spray isolation as well as effective doping concentration (Neff) of the p-type bulk presumably due to a difference in thermal donor (TD) activation during processing. The series with the higher concentration of TDs shows a delayed reverse annealing of Neff after irradia...

  4. Method for producing high carrier concentration p-Type transparent conducting oxides

    Science.gov (United States)

    Li, Xiaonan; Yan, Yanfa; Coutts, Timothy J.; Gessert, Timothy A.; Dehart, Clay M.

    2009-04-14

    A method for producing transparent p-type conducting oxide films without co-doping plasma enhancement or high temperature comprising: a) introducing a dialkyl metal at ambient temperature and a saturated pressure in a carrier gas into a low pressure deposition chamber, and b) introducing NO alone or with an oxidizer into the chamber under an environment sufficient to produce a metal-rich condition to enable NO decomposition and atomic nitrogen incorporation into the formed transparent metal conducting oxide.

  5. Characteristics of InAs/AlGaAs self-organized quantum dot modulation doped field effect transistors

    Science.gov (United States)

    Phillips, J.; Kamath, K.; Brock, T.; Bhattacharya, P.

    1998-06-01

    We have investigated the dc characteristics of InGaAs/AlGaAs modulation doped field effect transistors in which a layer of self-organized InAs quantum dots is inserted adjacent to the pseudomorphic quantum well channel. Distinct steps and a negative differential resistance are observed in the current-voltage characteristics at room temperature and lower temperatures. These are attributed to conduction through the bound states in the quantum dots.

  6. Precipitation of Cu and Ni in n- and p-type Czochralski-grown silicon characterized by photoluminescence imaging

    Science.gov (United States)

    Sun, Chang; Nguyen, Hieu T.; Rougieux, Fiacre E.; Macdonald, Daniel

    2017-02-01

    Photoluminescence (PL) images and micro-PL maps were taken on Cu- or Ni-doped monocrystalline silicon wafers, to investigate the distribution of the metal precipitates. Several n-type and p-type wafers were used in which Cu or Ni were introduced in the starting melt of the ingots and precipitated during the ingot cooling (as opposed to surface contamination). The micro-PL mapping allowed investigation of the metal precipitates with a higher spatial resolution. Markedly different precipitation patterns were observed in n- and p-type samples: in both Cu- and Ni-doped n-type samples, circular central regions and edge regions were observed. In these regions, particles were distributed randomly and homogeneously. In the p-type Cu-doped and Ni-doped samples, by contrast, the precipitates occurred in lines along orientations. The difference in the precipitation behaviour in n- and p-type samples is conjectured to be caused by different concentrations of self-interstitials and vacancies remaining in the crystal during the ingot cooling: there are more vacancies in the n-type ingots but more interstitials in the p-type ingots. The dopant effects on the intrinsic point defect concentrations in silicon crystals and possible precipitation mechanisms are discussed based on the findings in this work and the literature.

  7. Comparative NH 3-sensing characteristic studies of PANI/TiO II nanocomposite thin films doped with different acids

    Science.gov (United States)

    Tai, Huiling; Jiang, Yadong; Xie, Guangzhong; Yu, Junsheng; Ying, Zhihua; Chen, Xuan

    2008-02-01

    Polyaniline/titanium dioxide (PANI/TiO II) nanocomposite thin films were synthesized by in-situ self-assembly method, which were doped with p-toluene sulphonic acid (p-TSA) and hydrochloric acid (HCl), respectively. The thin films were characterized by using UV-Vis absorption spectroscopy and scanning electron microscope (SEM), and the NH 3 gas sensitive properties of the thin films were investigated at room temperature. The results showed that the PANI/TiO II thin film doped with HCl was superior to that doped with p-TSA in terms of response-recovery characteristics. The surface morphology characterization of the thin films were performed to explain the different gas-sensing properties.

  8. Effects of drain doping concentration on switching characteristics of tunnel field-effect transistor inverters

    Science.gov (United States)

    Kwon, Dae Woong; Kim, Jang Hyun; Park, Byung-Gook

    2016-11-01

    In order to investigate the effects of the modulation of drain doping concentration (N drain) on alternating current (AC) switching characteristics of a tunnel filed-effect transistor (TFET) inverter, the characteristics of TFETs with various N drains are analyzed rigorously through mixed-mode device and circuit TCAD simulations. As the N drain gets decreased, the drain current (I D) becomes reduced and the gate-to-drain capacitance (C GD) reflects the entire gate capacitance (C GG) at a lower gate voltage (V G), which leads to the degradation of falling/rising delay in TFET inverters. These phenomena are explained successfully by the change of quasi-Fermi energy in the drain (E F_drain) as a function of V G. The E F_drain rises dramatically from when tunneling current starts to flow from the source in the n-type TFET with low N drain. As a result, drain-side channel inversion occurs at a lower V G due to the reduction of the energy barrier between the E F_drain and the conduction band edge of the channel.

  9. pH-Sensing Characteristics of Hydrothermal Al-Doped ZnO Nanostructures

    Directory of Open Access Journals (Sweden)

    Jyh-Liang Wang

    2013-01-01

    Full Text Available Highly sensitive and stable pH-sensing properties of an extended-gate field-effect transistor (EGFET based on the aluminum-doped ZnO (AZO nanostructures have been demonstrated. The AZO nanostructures with different Al concentrations were synthesized on AZO/glass substrate via a simple hydrothermal growth method at 85°C. The AZO sensing nanostructures were connected with the metal-oxide-semiconductor field-effect transistor (MOSFET. Afterwards, the current-voltage (I-V characteristics and the sensing properties of the pH-EGFET sensors were obtained in different buffer solutions, respectively. As a result, the pH-sensing characteristics of AZO nanostructured pH-EGFET sensors with Al dosage of 3 at.% can exhibit the higher sensitivity of 57.95 mV/pH, the larger linearity of 0.9998, the smaller deviation of 0.023 in linearity, the lower drift rate of 1.27 mV/hour, and the lower threshold voltage of 1.32 V with a wider sensing range (pH 1 ~ pH 13. Hence, the outstanding stability and durability of AZO nanostructured ionic EGFET sensors are attractive for the electrochemical application of flexible and disposable biosensor.

  10. Hydrothermal synthesis and characteristic photoluminescence of Er-doped SnO2 nanoparticles

    Science.gov (United States)

    Tuan, Pham Van; Hieu, Le Trung; Nga, La Quynh; Dung, Nguyen Duc; Ha, Ngo Ngoc; Khiem, Tran Ngoc

    2016-11-01

    We report the characteristic photoluminescence (PL) spectra of erbium ion (Er3+)-doped tin dioxide (SnO2)nanoparticles. The materials were prepared via hydrothermal method at 180 °C with in 20 h by using various Er3+ ion concentrations ranging from 0.0 to 1.0 at%. After the synthesis, the materials were characterized through X-ray diffraction and high-resolution transmission electron microscopy. Crystallite SnO2 and its average particle diameter of approximately 5 nm did not change with Er3+ ion dopant concentration. Photoluminescence spectra showed the characteristic light emission from the Er3+ ions. The PL excitation spectra referred to an efficient energy transfer to Er3+ ions in the presence of SnO2nanoparticles. The most intense Er-related emission of SnO2:Er3+ nanoparticles in near infrared region was found in samples containing an Er3+ ion concentration of 0.25 at%. Although the absorption bandgaps of the materials were identified at approximately 3.8 eV, we found that efficient excitation comes with low excitation energy band edge. Excitation is possibly involved in shallow defects in SnO2 nanoparticles.

  11. Calcium decorated and doped phosphorene for gas adsorption

    Science.gov (United States)

    Lalitha, Murugan; Nataraj, Yuvarani; Lakshmipathi, Senthilkumar

    2016-07-01

    In this paper, we present the results from first-principles study based on the electronic structure and adsorption characteristics of CH4, CO2, H2 and NH3 adsorbed on Ca decorated/doped phosphorene. Our study finds that phosphorene exhibits n-type behaviour on decorating calcium, and p-type on doping calcium. Gas molecules are physisorbed on both pristine and calcium-mediated phosphorene, visible through their lower binding energy and charge transfer values. Ca decorated phosphorene is suitable for hydrogen storage due to its higher binding energy for H2. Ca doped structures shows increased binding affinity towards CH4 and NH3 in zigzag1 direction and armchair directions respectively. The extracts of our study implies that Ca doped phosphorene possess increased binding affinity towards gas molecules, and the results are highly helpful for gas adsorption and to design gas sensors based on calcium doped or decorated phosphorene.

  12. Chemical synthesis, structural, optical, magnetic characteristics and enhanced visible light active photocatalysis of Ni doped CuS nanoparticles

    Science.gov (United States)

    Subramanyam, K.; Sreelekha, N.; Amaranatha Reddy, D.; Murali, G.; Rahul Varma, K.; Vijayalakshmi, R. P.

    2017-03-01

    In this paper, we report systematic investigations on the effects of Ni doping on the structural, optical, magnetic and photocatalytic characteristics of CuS nanoparticles synthesized by simplistic wet chemical co-precipitation route via EDTA molecules as templates. XRD studies confirmed that accurate phase formation of synthesized nanoparticles and chemical composition were obtained by EDX. Magnetic measurements revealed that 3% Ni doped CuS nanoparticles show signs of good ferromagnetism at room temperature and transition of magnetic signs from ferromagnetic to paramagnetic nature by increasing the Ni dopant concentration in CuS host matrix. The photocatalytic degradation efficiency of the prepared pure and Ni doped CuS nanoparticles were evaluated as a function of simulated sunlight irradiation via RhB organic dye pollutant as a test molecule. Particularly, in the presence of 3% Ni doped CuS nanoparticles in pollutant solution 98.46% degradation efficiency was achieved within 60 min of sunlight irradiation; meanwhile bare CuS attained only 83.22%. Further, after five cycles 3% Ni doping CuS nanoparticles exhibit good photocatalytic stability with very negligible catalyst loss. We believe that the investigations in this study provides adaptable pathway for the synthesizing of various diluted magnetic semiconductor nanoparticles and their applications in spintronic devices as well as sunlight-driven photocatalysts intended for wastewater purification.

  13. Wide bandgap n-type and p-type semiconductor porous junction devices as photovoltaic cells

    Energy Technology Data Exchange (ETDEWEB)

    Lin, Yuan-Pai; Horng, Sheng-Fu [Institute of Electronics Engineering, National Tsing Hua University, Hsinchu 300, Taiwan (China); Chao, Yu-Chiang; Meng, Hsin-Fei [Institute of Physics, National Chiao Tung University, Hsinchu 300, Taiwan (China); Zan, Hsiao-Wen, E-mail: yuchiangchao@gmail.com, E-mail: meng@mail.nctu.edu.tw [Department of Photonics and Institute of Electro-Optical Engineering, National Chiao Tung University, Hsinchu 300, Taiwan (China)

    2011-10-12

    In junction absorber photovoltaics doped wide bandgap n-type and p-type semiconductors form a porous interpenetrating junction structure with a layer of low bandgap absorber at the interface. The doping concentration is high enough such that the junction depletion width is smaller than the pore size. The highly conductive neutral region then has a dentrite shape with fingers reaching the absorber to effectively collect the photo-carriers swept out by the junction electric field. With doping of 10{sup 19} cm{sup -3} corresponding to a depletion width of 25 nm, pore size of 32 nm, absorber thickness close to exciton diffusion length of 17 nm, absorber bandgap of 1.4 eV and carrier mobility over 10{sup -5} cm{sup 2} V{sup -1} s{sup -1}, numerical calculation shows the power conversion efficiency is as high as 19.4%. It rises to 23% for a triplet exciton absorber.

  14. Characterization of plasma etching damage on p -type GaN using Schottky diodes

    OpenAIRE

    2008-01-01

    The plasma etching damage in p-type GaN has been characterized. From current-voltage and capacitance-voltage characteristics of Schottky diodes, it was revealed that inductively coupled plasma (ICP) etching causes an increase in series resistance of the Schottky diodes and compensation of acceptors in p-type GaN. We investigated deep levels near the valence band of p-type GaN using current deep level transient spectroscopy (DLTS), and no deep level originating from the ICP etching damage was ...

  15. Photoluminescence characteristics of sintered silica glass doped with Cu ions using mesoporous SiO{sub 2}-PVA nanocomposite

    Energy Technology Data Exchange (ETDEWEB)

    Ikeda, Hiroshi [Art, Science and Technology Center for Cooperative Research, Kyushu University, Kasuga, Fukuoka 816-8580 (Japan); Murata, Takahiro [Faculty of Education and Master' s Course in Education, Kumamoto University, 2-40-1 Kurokami, Chuo-ku, Kumamoto 860-8555 (Japan); Fujino, Shigeru, E-mail: fujino@astec.kyushu-u.ac.jp [Art, Science and Technology Center for Cooperative Research, Kyushu University, Kasuga, Fukuoka 816-8580 (Japan)

    2015-07-15

    Monolithic silica glasses doped with Cu ions were prepared by immersing a mesoporous SiO{sub 2}-polyvinyl alcohol (PVA) nanocomposite in a copper nitrate solution followed by sintering at 1100 °C for 12 h in air. The Cu ions were reduced from divalent to monovalent during the sintering process and consequently Cu{sup +} was doped into the silica glass matrix. The sintered glass possessed blue or yellow photoluminescence (PL) under UV irradiation, depending on the total concentration of Cu ions in the sintered silica glass. At a lower concentration below 30 ppm, the isolated Cu{sup +} existed in the glass matrix resulting in the blue PL. However, above 70 ppm, the Cu{sup +}–Cu{sup +} pairs were present, exhibiting the yellow PL. It was demonstrated that the PL characteristics of the sintered silica glasses doped with monovalent copper ions were affected by the total concentration of Cu ions in the glass, which can be adjusted as a function of the immersion conditions. - Highlights: • Silica glass doped with Cu{sup +} was fabricated by sintering the nanocomposite. • The Cu ions were reduced from divalent to monovalent during the sintering process. • The sintered glass possessed blue or yellow PL under UV irradiation. • The blue and yellow PL are due to isolated Cu{sup +} and Cu{sup +}–Cu{sup +} pairs, respectively. • The PL characteristics depended on the total concentration of Cu ions in the glass.

  16. CuNb3O8: A p-Type Semiconducting Metal Oxide Photoelectrode.

    Science.gov (United States)

    Joshi, Upendra A; Maggard, Paul A

    2012-06-07

    A new p-type CuNb3O8 polycrystalline photoelectrode was investigated and was determined to have indirect and direct bandgap sizes of 1.26 and 1.47 eV, respectively. The p-type polycrystalline film could be prepared on fluorine-doped tin oxide glass and yielded a cathodic photocurrent under visible-light irradiation (λ > 420 nm) with incident photon-to-current efficiencies of up to ∼6-7% and concomitant hydrogen evolution. A Mott-Schottky analysis yielded a flat band potential of +0.35 V versus RHE (pH = 6.3) and a calculated p-type dopant concentration of ∼7.2 × 10(15) cm(-3). The conduction band energies are found to be negative enough for the reduction of water under visible light irradiation. A hole mobility of ∼145 cm(2)/V·s was obtained from J(I)-V(2) measurements using the Mott-Gurney relation, which is ∼50% higher than that typically found for p-type Cu2O. DFT-based electronic structure calculations were used to probe the atomic and structural origins of the band gap transitions and carrier mobility. Thus, a new p-type semiconductor is discovered for potential applications in solar energy conversion.

  17. Role of Morphological Structure, Doping, and Coating of Different Materials in the Sensing Characteristics of Humidity Sensors

    Directory of Open Access Journals (Sweden)

    Ashis Tripathy

    2014-09-01

    Full Text Available The humidity sensing characteristics of different sensing materials are important properties in order to monitor different products or events in a wide range of industrial sectors, research and development laboratories as well as daily life. The primary aim of this study is to compare the sensing characteristics, including impedance or resistance, capacitance, hysteresis, recovery and response times, and stability with respect to relative humidity, frequency, and temperature, of different materials. Various materials, including ceramics, semiconductors, and polymers, used for sensing relative humidity have been reviewed. Correlations of the different electrical characteristics of different doped sensor materials as the most unique feature of a material have been noted. The electrical properties of different sensor materials are found to change significantly with the morphological changes, doping concentration of different materials and film thickness of the substrate. Various applications and scopes are pointed out in the review article. We extensively reviewed almost all main kinds of relative humidity sensors and how their electrical characteristics vary with different doping concentrations, film thickness and basic sensing materials. Based on statistical tests, the zinc oxide-based sensing material is best for humidity sensor design since it shows extremely low hysteresis loss, minimum response and recovery times and excellent stability.

  18. Emission Characteristics of PVK Doped TbY(o-MBA)6(phen)2 Systems

    Institute of Scientific and Technical Information of China (English)

    Zhang Yuanyuan; Deng Zhenbo; Liang Chunjun; Chen Baomei; Xiao Jing; Xu Denghui; Wang Ruifen

    2006-01-01

    A rare earth complex TbY (o-MBA)6(phen)2 was synthesized, which was first used as an emitting material in electroluminescence.By doping it into the conjugated polymer PVK, single-layer and double-layer devices were fabricated with structures: device A: ITO/PVK: TbY (o-MBA)6(phen)2/LiF/Al;B: ITO/PVK: TbY (o-MBA)6(phen)2/AlQ/LiF/Al;C: ITO/PVK: TbY (o-MBA)6(phen)2/BCP/AlQ/LiF/Al.The characteristics of these devices were investigated.For single-layer and double-layer devices, the emission of PVK was completely restrained, and only the green emission from Tb3+ was observed in electroluminescence.The above mentioned observation is attributed to the different mechanism of electroluminescence and photoluminescence.In photoluminescence process, the energy of Tb complex may come from PVK through Frster energy transfer process, while in electroluminescence process direct sequential charge trapping appeares to be the main operating mechanism.From the optimized device B, brightly green emission can be obtained, and the highest EL brightness of the device reaches 213 cd·m-2 at 14 V.

  19. Investigation of the photosensitivity, temperature sustainability and fluorescence characteristics of several Er-doped photosensitive fibers

    CERN Document Server

    Shen, Y H; Mandal, J; Sun, T; Grattan, K T V; Wade, S A; Collins, Stephen F; Baxter, Gregory W; Dussardier, Bernard; Monnom, Gérard

    2011-01-01

    Three different types of Er doped photosensitive fibers, germanium/erbium (Ge/Er) fiber, tin/germanium/erbium fiber (Sn/Er) and antimony/germanium/erbium fiber (Sb/Er) have been manufactured and studied for use in optical sensor systems. Their characteristics of photosensitivity, the temperature sustainability of fiber Bragg gratings (FBGs) written into these fibers and the fluorescence emission from the Er dopant were investigated and compared. It has been shown in this work that these fibers all show a satisfactory degree of photosensitivity to enable the fabrication of FBGs and a significant level of fluorescence emission within the 1550 nm band for sensor use. The high temperature sustainability of the FBGs written into these fibers was investigated and seen to be quite significant at temperatures as high as 850 ^{\\circ}C, in particular for the Sn/Er and Sb/Er fibers. A fiber laser using the Sb/Er fiber as the gain medium was demonstrated, giving evidence of the strong fluorescence emission from the Er do...

  20. Photo and cathodoluminescence characteristics of dysprosium doped yttrium oxide nanoparticles prepared by Polyol method

    Energy Technology Data Exchange (ETDEWEB)

    Balderas-Xicohténcatl, R., E-mail: rbalderas@fis.cinvestav.mx [Centro de Investigación y de Estudios Avanzados-IPN, Departamento de Física, Apdo, Postal 14-470, Del. Gustavo A. Madero, C.P. 07360, México, D.F. (Mexico); Martínez-Martínez, R. [Instituto de Física y Matemáticas, Universidad Tecnológica de la Mixteca, Carretera a Acatlima Km. 2.5, Huajuapan de León, Oaxaca 69000 (Mexico); Rivera-Alvarez, Z.; Santoyo-Salazar, J.; Falcony, C. [Centro de Investigación y de Estudios Avanzados-IPN, Departamento de Física, Apdo, Postal 14-470, Del. Gustavo A. Madero, C.P. 07360, México, D.F. (Mexico)

    2014-02-15

    The luminescent characteristics of Dy{sup 3+}-doped Y{sub 2}O{sub 3} nanopowders synthesized using the polyol method are reported. The Y{sub 2}O{sub 3} nanoparticles presented a cubic phase crystalline structure of Y{sub 2}O{sub 3} after an annealing treatment in oxygen ambient at temperatures above 600 °C. The averaged crystallite size determined from the X-ray diffraction peaks width was in the 20–32 nm range depending on the annealing temperature. Scanning and transmission electron microscopy studies indicate the formation of nanoparticle aggregates up to 175 nm in diameter. Photoluminescence and cathodoluminescence measurements show a predominant emission at 573 nm, which is attributed to the {sup 4}F{sub 9/2}→{sup 6}H{sub 13/2} of the Dy{sup 3+} ion. The luminescence emission dependence with the dopant concentration and post-annealing temperatures is discussed. -- Highlights: • Nanoparticles of Y{sub 2}O{sub 3}:Dy{sup 3+} have been successfully synthesized by the polyol method. • XRD shows a grain size from 20 to 32 nm which is in agreement with SEM and TEM. • Electronic micrographs indicate the formation agglomerates of ∼175 nm. • The method used in the synthesis is industrial scalable and a low cost. • CL emission is observed at naked eye.

  1. Contact resistance and V-I characteristics in a Ag-doped Bi-Sr-Ca-Cu-O superconductor

    Science.gov (United States)

    Shimizu, Noriyuki; Michishita, Kazuo; Higashida, Yutaka; Yokoyama, Hisanori; Hayami, Yumi

    1989-11-01

    Contact resistance and V-I characteristics were investigated in Ag-doped and undoped Bi-Sr-Ca-Cu-O bulk samples prepared by the floating-zone method. In undoped samples, with increasing current pulse width, rapidity of voltage rise in V-I characteristics increases and J(c) decreases. The contact resistance is nonohmic and temperature dependence is semiconductorlike. In an Ag-doped sample, rapidity of voltage rise and J(c) are not influenced by pulse width, and deviation of J(c) among samples is small. The ohmic contact resistance has metallike temperature dependence, and its value is less than 1/500 of that in an undoped sample.

  2. Influence of delta-doping on the hole capture probability in Ge/Si quantum dot mid-infrared photodetectors.

    Science.gov (United States)

    Yakimov, Andrew; Kirienko, Victor; Timofeev, Vyacheslav; Bloshkin, Aleksei; Dvurechenskii, Anatolii

    2014-01-01

    We study the effect of delta-doping on the hole capture probability in ten-period p-type Ge quantum dot photodetectors. The boron concentration in the delta-doping layers is varied by either passivation of a sample in a hydrogen plasma or by direct doping during the molecular beam epitaxy. The devices with a lower doping density is found to exhibit a lower capture probability and a higher photoconductive gain. The most pronounced change in the trapping characteristics upon doping is observed at a negative bias polarity when the photoexcited holes move toward the δ-doping plane. The latter result implies that the δ-doping layers are directly involved in the processes of hole capture by the quantum dots.

  3. First principles study of crystal Si-doped Ge2Sb2Te5

    Science.gov (United States)

    Yan, Beibei; Yang, Fei; Chen, Tian; Wang, Minglei; Chang, Hong; Ke, Daoming; Dai, Yuehua

    2017-02-01

    Ge2Sb2Te5 (GST) and Si-doped GST with hexagonal structure were investigated by means of First-principles calcucations. We performed many kinds of doping types and studied the electronic properties of Si-doped GST with various Si concentrations. The theoretical calculations show that the lowest formation energy appeared when Si atoms substitute the Sb atoms (SiSb). With the increasing of Si concentrations from 10% to 30%, the impurity states arise around the Fermi level and the band gap of the SiSb structure broadens. Meanwhile, the doping supercell has the most favorable structure when the doping concentration keeps in 20%. The Si-doped GST exhibits p-type metallic characteristics more distinctly owing to the Fermi level moves toward the valence band. The Te p, d-orbitals electrons have greater impact on electronic properties than that of Te s-orbitals.

  4. Discharge characteristics of plasma display panels with Si-doped MgO protective layers

    Energy Technology Data Exchange (ETDEWEB)

    Ram, Sanjay K., E-mail: sanjayk.ram@gmail.co [Laboratoire de Physique des Interfaces et des Couches Minces (UMR 7647 du CNRS), Ecole Polytechnique, 91128 Palaiseau Cedex (France); Department of Physics, Indian Institute of Technology Kanpur, Kanpur-208016 (India); Barik, U.K. [Samtel Color Limited, Ghaziabad-201009 (India); Sarkar, Surajit; Biswas, Paramananda [Department of Physics, Indian Institute of Technology Kanpur, Kanpur-208016 (India); Singh, Vandana [Laboratoire de Physique des Interfaces et des Couches Minces (UMR 7647 du CNRS), Ecole Polytechnique, 91128 Palaiseau Cedex (France); Dwivedi, H.K. [Samtel Color Limited, Ghaziabad-201009 (India); Kumar, Satyendra [Department of Physics, Indian Institute of Technology Kanpur, Kanpur-208016 (India)

    2009-10-01

    We report on our study of the influence of varying concentrations of Si doping on the secondary electron emission (SEE) yield of MgO thin films prepared by electron beam evaporation technique. The series of Si-doped MgO films were microstructurally characterized with various tools like X-ray diffraction, scanning electron microscopy and atomic force microscopy. The optimization of the concentration of Si doping is seen to enhance the SEE yield. We discuss the correlation of SEE yield in the context of different deposition and measurement conditions and crystalline orientation.

  5. Probing Photocatalytic Characteristics of Sb-Doped TiO2 under Visible Light Irradiation

    OpenAIRE

    Lingjing Luo; Tianfeng Li; Xia Ran; Pan Wang; Lijun Guo

    2014-01-01

    Sb-doped TiO2 nanoparticle with varied dopant concentrations was synthesized using titanium tetrachloride (TiCl4) and antimony chloride (SbCl3) as the precursors. The properties of Sb-doped TiO2 nanoparticles were characterized by X-ray diffraction (XRD), scanning electron microscope (SEM), fluorescence spectrophotometer, and Uv-vis spectrophotometer. The absorption edge of TiO2 nanoparticles could be extended to visible region after doping with antimony, in contrast to the UV absorption of p...

  6. P-type electronic and thermal transport properties of Mg2Sn1-xSix

    Science.gov (United States)

    Kim, Sunphil; Wiendlocha, Bartlomiej; Heremans, Joseph P.

    2013-03-01

    P-type Mg2Sn doped with various acceptors(1)(2) has been studied as a potential thermoelectric material. Because of its narrow band gap and high lattice thermal conductivity, the zT values of the binary compound are limited: zTmax reported is 0.3(3). In this work, we synthesize and characterize p-type-doped Mg2Sn1-xSix with various acceptors. Silicon is added in order to widen the band gap and scatter the phonons. The conduction band degeneracy that yields excellent zT in n-type material in the Mg2Sn1-xSix alloy system unfortunately does not apply to p-type material. Thermomagnetic and galvanomagnetic properties (electrical resistivity, Seebeck, Hall, and Nernst coefficients) are measured, along with thermal conductivity and band gap measurements. Finally, zT values are reported. (1) H. Y. Chen et al. Journal of Electronic Materials, Vol. 38, No. 7, 2009 (2) S. Choi et al. Journal of Electronic Materials, Vol. 41, No. 6, 2012 (3) H. Y. Chen et al. Phys. Status Solidi A 207, No. 11, 2523-2531 (2010) The work is supported by the joint NSF/DOE program on thermoelectrics, NSF-CBET-1048622

  7. Investigation on characteristics of self-organization in Mach-Zehnder erbium-doped fiber laser cavity

    Institute of Scientific and Technical Information of China (English)

    Fengnian Liu; Bo Liu; Bangcai Huang; Guiyun Kai; Shuzhong Yuan; Xiaoyi Dong

    2008-01-01

    The characteristics of coherent coupling in Mach-Zehnder erbium-doped fiber laser cavity are experimentally studied.By virtue of a seemly controlling of length difference between two interferometric arms,the obtained comb-like spectrum of interferometer resonator with a period of 0.06 nm commendably agrees with the theory of self-organization coherence The coherent output exits from the output mirror of a fiber Bragg grating with 4.5% reflectivity.A high coherent combining efficiency of 94% is obtained.Investigation on characteristics of the leak power opens out self-organization mechanism in Mach-Zehnder composite cavity.

  8. Effects of palladium on the optical and hydrogen sensing characteristics of Pd-doped ZnO nanoparticles

    Directory of Open Access Journals (Sweden)

    Anh-Thu Thi Do

    2014-08-01

    Full Text Available The effect of palladium doping of zinc oxide nanoparticles on the photoluminescence (PL properties and hydrogen sensing characteristics of gas sensors is investigated. The PL intensity shows that the carrier dynamics coincides with the buildup of the Pd-related green emission. The comparison between the deep level emission and the gas sensing response characteristics allows us to suggest that the dissociation of hydrogen takes place at PdZn-vacancies ([Pd 2+(4d9]. The design of this sensor allows for a continuous monitoring in the range of 0–100% LEL H2 concentration with high sensitivity and selectivity.

  9. Magnetic and ferroelectric characteristics of Gd$^{3+}$ and Ti$^{4+}$ co-doped BiFeO$_3$ ceramics

    Indian Academy of Sciences (India)

    SHIVANAND MADOLAPPA; A V ANUPAMA; P W JASCHIN; K B R VARMA; B SAHOO

    2016-04-01

    Polycrystalline BiFeO3 and Bi$_{0.9}$Gd$_{0.1}$Fe$_{1−x}$Ti$_x$O$_3$ ($x = 0$, 0.01, 0.05 and 0.1) samples were synthesized by solid-state reaction route. Structural, magnetic and ferroelectric properties of these samples were investigated. X-ray powder diffraction (XRD) results confirmed the presence of a significant amount of Bi$_2$Fe$_4$O$_9$ impurity phase in the undoped BiFeO$_3$ sample. Mössbauer spectroscopy studies corroborated the XRD studies to confirm the presence of impurity phase.We have observed that gadolinium (Gd$^{3+}$) and titanium (Ti$^{4+}$) doping, respectively, on Bi$^{3+}$ and Fe$^{3+}$ sites facilitated a significant reduction in the impurity phase formation in BiFeO$_3$. Interestingly, Gd$^{3+}$-doping significantly reduced the impurity phase formation as compared to the undoped BiFeO$_3$ sample. This impurity phase formation was further overcome by doping higher ($x \\ge 0.05$) amounts of Ti in BiFeO$_3$. The crystallographicsite occupancies of Gd and Ti were confirmed by Rietveld refinement of XRD data,Mössbauer spectroscopy and magnetization measurements. An enhancement in ferromagnetic properties along with moderate ferroelectricproperties have been observed after co-doping. There was an increasing trend in remnant polarization (Pr) with the increase in Ti concentration besides an improvement in the characteristic saturation magnetization. Our resultsdemonstrate that Gd$^{3+}$ and Ti$^{4+}$ doping could be used to enhance multifunctional properties of BiFeO3 ceramics to enable them as potential material for various devices.

  10. Realization of Ag-S codoped p-type ZnO thin films

    Energy Technology Data Exchange (ETDEWEB)

    Xu, Tian Ning, E-mail: xtn9886@zju.edu.cn [Department of Science, Zhijiang College of Zhejiang University of Technology, Hangzhou, Zhejiang 310024 (China); Department of Physics, State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou, Zhejiang 310027 (China); Li, Xiang; Lu, Zhong [Department of Science, Zhijiang College of Zhejiang University of Technology, Hangzhou, Zhejiang 310024 (China); Chen, Yong Yue [Department of Physics, State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou, Zhejiang 310027 (China); Sui, Cheng Hua [Department of Science, Zhijiang College of Zhejiang University of Technology, Hangzhou, Zhejiang 310024 (China); Wu, Hui Zhen [Department of Physics, State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou, Zhejiang 310027 (China)

    2014-10-15

    Highlights: • Ag-S codoped p-type ZnO thin films have been fabricated. • The films exhibit low resistivity and high Hall mobility and hole concentration. • A ZnO:(Ag, S)/i-ZnO/ZnO:Al homojunction has been fabricated and shows rectifying behaviors. - Abstract: Ag-S codoped ZnO films have been grown on quartz substrates by e-beam evaporation at low temperature (100 °C). The effects of Ag{sub 2}S content on the structural and electrical properties of the films were investigated. The results showed that 2 wt% Ag{sub 2}S doped films exhibited p-type conduction, with a resistivity of 0.0347 Ω cm, a Hall mobility of 9.53 cm{sup 2} V{sup −1} s{sup −1}, and a hole concentration of 1.89 × 10{sup 19} cm{sup −3} at room temperature. The X-ray photoelectron spectroscopy measurements showed that Ag and S have been incorporated into the films. To further confirm the p-type conduction of Ag-S codoped ZnO films, a ZnO:(Ag, S)/i-ZnO/ZnO:Al homojunction was fabricated and rectifying behaviors of which was measured. High electrical performance and low growth temperature indicate that Ag{sub 2}S is a promising dopant to fabricate p-type Ag-S codoped ZnO films.

  11. Optical Characteristics of La-Doped ZnS Thin Films Prepared by Chemical Bath Deposition

    Institute of Scientific and Technical Information of China (English)

    XIE Hai-Qing; CHEN Yuan; HUANG Wei-Qing; HUANG Gui-Fang; PENG Ping; PENG Li; WANG Tai-Hang; ZENG Yun

    2011-01-01

    Undoped and La-doped ZnS thin films are prepared by chemical bath deposition (CBD) process through the co-precipitation reaction of inorganic precursors zinc sulfate, thiosulfate ammonia and La2O3. Composition of the films is analyzed using an energy-dispersive x-ray spectroscopy (EDS). Absorption spectra and spectral transmittances of the films are measured using a double beam UV-VIS spectrophotometer (TU-1901). It is found that significant red shifts in absorption spectra and decrease in absorptivity are obtained with increasing lanthanum. Moreover, optical transmittance is increased as La is doped, with a transmittance of more than 80% for wavelength above 360 nm in La-doped ZnS thin films. Compared to pure ZnS, the band gap decreases and flat-band potential positively shifts to quasi-metal for the La-doped ZnS. These results indicate that La-doped ZnS thin films could be valuably adopted as transparent electrodes.%@@ Undoped and La-doped ZnS thin films are prepared by chemical bath deposition (CBD) process through the co-precipitation reaction of inorganic precursors zinc sulfate, thiosulfate ammonia and La2O2.Composition of the 61ms is analyzed using an energy-dispersive x-ray spectroscopy (EDS).Absorption spectra and spectral tra.nsmitta.nces of the 61ms are measured using a double beam UV-VIS spectrophotometer (TU-1901).It is found that significant red shifts in absorption spectra and decrease in absorptivity are obtained with increasing lanthanum.Moreover, optical transmittance is increased as La is doped, with a transmittance of more than 80% for wavelength above 360 nm in La-doped ZnS thin 61ms.Compared to pure ZnS, the band gap decreases and flat-band potential positively shifts to quasi-metal for the La-doped ZnS.These results indicate that La-doped ZnS thin 6hns could be valuably adopted as transparent electrodes.

  12. Study on the Characteristics of Ag Doped CuO-BaTiO3 CO2 Sensors

    Directory of Open Access Journals (Sweden)

    Jinhuai Liu

    2002-09-01

    Full Text Available In this paper the characteristics of a CuO-BaTiO3 based CO2 gas sensor was investigated. The sensitivity of the CuO-BaTiO3 based CO2 sensor was influenced by doping various metal elements such as Au, Ag, Pt, Pd, Ce, Mg, Sr, La, Zn, Fe and Bi, which were added as a pure metal or in the form of metal oxides. It was found that Ag is the most suitable additive among all substances tested. The Ag-doped CO2 gas sensor has better sensitivity and lower operating temperature, with a detection concentration range of from 100 ppm to 10%. The sensor also shows good stability.

  13. Piezoelectric Nanogenerator Using p-Type ZnO Nanowire Arrays

    KAUST Repository

    Lu, Ming-Pei

    2009-03-11

    Using phosphorus-doped ZnO nanowire (NW) arrays grown on silicon substrate, energy conversion using the p-type ZnO NWs has been demonstrated for the first time. The p-type ZnO NWs produce positive output voltage pulses when scanned by a conductive atomic force microscope (AFM) in contact mode. The output voltage pulse is generated when the tip contacts the stretched side (positive piezoelectric potential side) of the NW. In contrast, the n-type ZnO NW produces negative output voltage when scanned by the AFM tip, and the output voltage pulse is generated when the tip contacts the compressed side (negative potential side) of the NW. In reference to theoretical simulation, these experimentally observed phenomena have been systematically explained based on the mechanism proposed for a nanogenerator. © 2009 American Chemical Society.

  14. Probing Photocatalytic Characteristics of Sb-Doped TiO2 under Visible Light Irradiation

    Directory of Open Access Journals (Sweden)

    Lingjing Luo

    2014-01-01

    Full Text Available Sb-doped TiO2 nanoparticle with varied dopant concentrations was synthesized using titanium tetrachloride (TiCl4 and antimony chloride (SbCl3 as the precursors. The properties of Sb-doped TiO2 nanoparticles were characterized by X-ray diffraction (XRD, scanning electron microscope (SEM, fluorescence spectrophotometer, and Uv-vis spectrophotometer. The absorption edge of TiO2 nanoparticles could be extended to visible region after doping with antimony, in contrast to the UV absorption of pure TiO2. The results showed that the photocatalytic activity of Sb-doped TiO2 nanoparticles was much more active than pure TiO2. The 0.1% Sb-doped TiO2 nanoparticles demonstrated the best photocatalytic activity which was better than that of the Degussa P25 under visible light irradiation using terephthalic acid as fluorescent probe. The effects of Sb dopant on the photocatalytic activity and the involved mechanism were extensively investigated in this work as well.

  15. Photovoltaic properties of ZnO nanorods/p-type Si heterojunction structures

    Directory of Open Access Journals (Sweden)

    Rafal Pietruszka

    2014-02-01

    Full Text Available Selected properties of photovoltaic (PV structures based on n-type zinc oxide nanorods grown by a low temperature hydrothermal method on p-type silicon substrates (100 are investigated. PV structures were covered with thin films of Al doped ZnO grown by atomic layer deposition acting as transparent electrodes. The investigated PV structures differ in terms of the shapes and densities of their nanorods. The best response is observed for the structure containing closely-spaced nanorods, which show light conversion efficiency of 3.6%.

  16. Above bandgap luminescence of p-type GaAs epitaxial layers

    Science.gov (United States)

    Sapriel, J.; Chavignon, J.; Alexandre, F.; Azoulay, R.; Sermage, B.; Rao, K.; Voos, M.

    1991-08-01

    New photoluminescence bands are observed in p-type GaAs epitaxial layers at 300 and 80 K, above the bandgap. These bands are independent of the nature of the dopant (Zn, Be, C) and of the growth technique (MBE or MOCVD). Their intensities increase as a function of the p doping (1 × 10 17 < p < 2 × 10 20cm-3) and peak at energies which correspond to transitions between the Γ 6, L 6 and X 6 minima of the conduction band and the Γ 8 and Γ 7 maxima of the valence band.

  17. DyP-type peroxidases comprise a novel heme peroxidase family.

    Science.gov (United States)

    Sugano, Y

    2009-04-01

    Dye-decolorizing peroxidase (DyP) is produced by a basidiomycete (Thanatephorus cucumeris Dec 1) and is a member of a novel heme peroxidase family (DyP-type peroxidase family) that appears to be distinct from general peroxidases. Thus far, 80 putative members of this family have been registered in the PeroxiBase database (http://peroxibase.isbsib.ch/) and more than 400 homologous proteins have been detected via PSI-BLAST search. Although few studies have characterized the function and structure of these proteins, they appear to be bifunctional enzymes with hydrolase or oxygenase, as well as typical peroxidase activities. DyP-type peroxidase family suggests an ancient root compared with other general peroxidases because of their widespread distribution in the living world. In this review, firstly, an outline of the characteristics of DyP from T. cucumeris is presented and then interesting characteristics of the DyP-type peroxidase family are discussed.

  18. Characteristics of ionic polymer-metal composite with chemically doped TiO2 particles

    Science.gov (United States)

    Jung, Youngsoo; Kim, Seong Jun; Kim, Kwang J.; Lee, Deuk Yong

    2011-12-01

    Many studies have investigated techniques to improve the bending performance of ionic polymer-metal composite (IPMC) actuators, including 'doping' of metal particles in the polymer membrane usually by means of physical processes. This study is mainly focused on the characterization of the physical, electrochemical and electromechanical properties of TiO2-doped ionic polymer membranes and IPMCs prepared by the sol-gel method, which results in a uniform distribution of the particles inside the polymer membrane. X-ray and UV-visible spectra indicate the presence of anatase-TiO2 in the modified membranes. TiO2-doped membranes (0.16 wt%) exhibit the highest level of water uptake. The glass transition temperature of these membranes, measured using differential scanning calorimetry (DSC), increases with the increase of the amount of TiO2 in the membrane. Dynamic mechanical analysis (DMA) demonstrated that the storage modulus of dried TiO2-doped ionic polymer membranes increases as the amount of TiO2 in the membrane increases, whereas the storage modulus of hydrated samples is closely related to the level of water uptake. Electrochemical impedance spectroscopy (EIS) shows that the conductivity of TiO2-doped membranes decreases with increasing TiO2 content in spite of an internal resistance drop in the samples. Above all, bending deflection of TiO2-doped IPMC decreased with higher TiO2 content in the membrane while the blocking force of each sample increased with the higher TiO2 content. Additionally, it was determined that the lifetime of IPMC is strongly dependent on the level of water uptake.

  19. Free volume effects on the fluorescence characteristics of sol-gel glasses doped with quinine sulphate

    Science.gov (United States)

    Meneses-Nava, M. A.; Barbosa-García, O.; Díaz-Torres, L. A.; Chávez-Cerda, S.; King, T. A.

    1999-12-01

    The broadening of the absorption and fluorescence spectra and the red shift of the fluorescence maximum of quinine sulfate doped sol-gel glasses, before and after PMMA polymer impregnation, are investigated at different concentrations. The fluorescence decay of the quinine sulfate doped samples does not fit to a single exponential, as it does in ethanol solutions. We found that a double exponential gives a good fit to the obtained results. Introduction of solvent to fill the pores of the matrix does not only have the same effect as the polymer, but also reveals the strong attachment of the molecules to the pore walls and the influence of the interaction with the cage.

  20. Chemical shift and surface characteristics of Al-doped ZnO thin film on SiOC dielectrics.

    Science.gov (United States)

    Oh, Teresa; Lee, Sang Yeol

    2013-10-01

    Aluminum doped zinc oxide (AZO) films were fabricated on SiOC/p-Si wafer and SiOC film was prepared on a p-type Si substrate with the SiC target at oxygen ambient with the gas flow rate of 5-30 sccm by a RF magnetron sputter. C-V curve of SiOC/Si wafer was measured to observe the relationship between the polarity of SiOC dielectrics and the change of capacitance depending on oxygen gas flow rate. The SiOC film could be controlled to be polar or nonpolar, and their surface energy was changed depending on the polarity. Smooth surface is essential to improve the TFT performance. AZO-TFTs used smooth SiOC film with low polarity as a gate insulator was observed to show low leakage current (IL) and low subthreshold voltage swing. It is proposed that SiOC film with high degree amorphous structure as a gate insulator between AZO and Si wafer could solve problems of the mismatched interfaces, which was originated from the electron scattering due to the grain boundary.

  1. Field-emission characteristics of Al-doped ZnO nanostructures hydrothermally synthesized at low temperature.

    Science.gov (United States)

    Yang, Po-Yu; Wang, Jyh-Liang; Tsai, Wei-Chih; Wang, Shui-Jinn; Lin, Jia-Chuan; Lee, I-Che; Chang, Chia-Tsung; Cheng, Huang-Chung

    2011-07-01

    The aluminum-doped ZnO (AZO) nanostructures with different Al concentrations were synthesized on AZO/glass substrate via a simple hydrothermal growth method at a temperature as low as 85 degrees C. The morphologies, crystallinity, optical emission properties, and chemical bonding states of AZO nanostructures show evident dependence on the aluminum dosage. The morphologies of AZO nanostructures were changed from vertically aligned nanowires (NWs), and NWs coexisted with nanosheets (NSs), to complete NSs in respect of the Al-dosages of 0-3 at.%, 5 at.%, and 7 at.%, correspondingly. The undoped ZnO and lightly Al-doped AZO (< or = 3 at.%) NWs are single-crystalline wurtzite structure. In contrast, heavily Al-doped AZO sample is polycrystalline. The AZO nanostructure with 3 at.% Al-dosages reveals the optimal crystallinity and less structural defects, reflecting the longest carrier lifetime and highest conductivity. Consequently, the field-emission characteristics of such an AZO emitter can exhibit the higher current density, larger field-enhancement factor (beta) of 3131, lower turn-on field of 2.17 V/microm, and lower threshold field of 3.43 V/microm.

  2. Effect of Ti co-doping on photoluminescence characteristics of Eu:BaAl{sub 2}O{sub 4}

    Energy Technology Data Exchange (ETDEWEB)

    Ryu, H. [Korea Research Institute of Chemical Technology, Yuseong, Daejeon 305-600 (Korea, Republic of); Bartwal, K.S., E-mail: bartwalks@yahoo.co.in [Laser Materials Development and Devices Division, Raja Ramanna Centre for Advanced Technology, Indore 452 013 (India)

    2013-10-15

    Highlights: •BaAl{sub 2}O{sub 4}:Eu{sup 2+}, Ti{sup 3+}, green phosphor with varying Ti concentrations were prepared by solid-state reaction method. •Powder XRD analysis shows the prepared compositions are single phase with hexagonal structure. •High emission efficiency was observed for the Ti co-doped samples compared to the parent phosphor. •This study shows that this materials has a potential for green phosphor. -- Abstract: The effect of Ti co-doping in BaAl{sub 2}O{sub 4}:Eu{sup 2+} phosphor material on crystalline quality, morphology and photoluminescence (PL) characteristics was investigated. The co-doped green phosphor compositions (BaAl{sub 2}O{sub 4}:Eu{sup 2+}, Ti{sup 3+}) with varying concentrations of Ti were prepared by solid-state synthesis method. These compositions were characterized for their phase, morphology and crystallinity by powder X-ray diffraction, SEM and TEM techniques. The photoluminescence properties were investigated measuring PL and decay time. Broad band UV excited luminescence was observed for BaAl{sub 2}O{sub 4}:Eu{sup 2+}, Ti{sup 3+} in the green region (λ{sub max} = 500 nm) due to transitions from 4f{sup 6} 5d{sup 1} to the 4f{sup 7} configuration of the Eu{sup 2+} ion.

  3. Design of P-Type Cladding Layers for Tunnel-Injected UVA Light Emitting Diodes

    CERN Document Server

    Zhang, Yuewei; Akyol, Fatih; Allerman, Andrew A; Moseley, Michael W; Armstrong, Andrew M; Rajan, Siddharth

    2016-01-01

    We discuss the engineering of p-AlGaN cladding layers for achieving efficient tunnel-injected III-Nitride ultraviolet light emitting diodes (UV LEDs) in the UV-A spectral range. We show that capacitance-voltage measurements can be used to estimate the compensation and doping in p-AlGaN layers located between the multi-quantum well region and the tunnel junction layer. By increasing the p-type doping concentration to overcome the background compensation, on-wafer external quantum efficiency and wall-plug efficiency of 3.37% and 1.62% were achieved for tunnel-injected UV LEDs emitting at 325 nm. We also show that interband tunneling hole injection can be used to realize UV LEDs without any acceptor doping. The work discussed here provides new understanding of hole doping and transport in AlGaN-based UV LEDs, and demonstrates the excellent performance of tunnel-injected LEDs for the UV-A wavelength range.

  4. An upper limit of Cr-doping level to Retain Zero-strain Characteristics of Li4Ti5O12 Anode Material for Li-ion Batteries

    Science.gov (United States)

    Song, Hannah; Jeong, Tae-Gyung; Yun, Su-Won; Lee, Eun-Kyung; Park, Shin-Ae; Kim, Yong-Tae

    2017-01-01

    Since Li4Ti5O12 as a promising anode material in lithium-ion batteries (LIBs) has a poor rate performance due to low electronic conductivity, a doping of Li4Ti5O12 with heterogeneous atoms has been considered to overcome this problem. Herein, we report that there is an upper limit of doping level to maintain the zero strain characteristics of Li4Ti5O12 lattice during charge/discharge process. By using synchrotron studies, it was revealed that the Li+ diffusivity was maximized at a certain doping level for which the conductivity was markedly increased with maintaining the zero strain characteristics. However, with more doses of dopants over the upper limit, the lattice shrank and therefore the Li+ diffusivity decreased, although the electronic conductivity was further increased in comparison with the optimal doping level. PMID:28233818

  5. Simulation of Enhancement Mode GaN HEMTs with Threshold > 5 V using P-type Buffer

    CERN Document Server

    Bajaj, Sanyam; Krishnamoorthy, Sriram; Hung, Ting-Hsiang; Rajan, Siddharth

    2015-01-01

    A high threshold voltage enhancement-mode GaN HEMT with p-type doped buffer is discussed and simulated. Analytical expressions are derived to explain the role of buffer capacitance in designing and enhancing threshold voltage. Simulations of the proposed device with p-type buffer show threshold voltages above 5 V, and a positive shift in threshold voltage as the oxide capacitance is reduced, thus enabling threshold voltage tunability over an unprecedented range for GaN-based HEMTs. The electric field profiles, breakdown performance, on-resistance and delay tradeoffs in the proposed pGaN back HEMT device are also discussed.

  6. Synthesis and photoluminescent characteristics of Dy3+ doped Gd2O3 phosphors

    Science.gov (United States)

    Jeena, T. R.; Ezhil Raj, A. Moses; Bououdina, M.

    2017-02-01

    Pure and dysprosium doped gadolinium oxide nanoparticles for three different concentrations (2, 5 and 10 mol.%) were synthesized by auto-combustion method using citric acid as fuel. The nanoparticles obtained were characterized using powder x-ray diffraction (XRD), Fourier transform infrared (FTIR), scanning electron microscopy (SEM), UV–vis–NIR spectroscopy and photoluminescence (PL) spectroscopy techniques. XRD pattern revealed the crystalline cubic phase with space group Ia3 (Space Group: 206) for both the pure and doped Gd2O3 nanoparticles. The metal oxide phase formation and purity of Gd2O3 nanoparticles were further confirmed from the FTIR spectra. Morphology of the pure Gd2O3 powder is loosely dispersed clusters of tiny particles with microscopic pores, whereas for the doped samples aggregates were broken to form small clusters. Optical absorption measurements were recorded in the UV–vis–NIR wavelength region and the optical band gap variations with dopant concentration were discussed. The PL spectra of pure and Dy3+ doped Gd2O3 nanoparticles have been studied and the effect of emitted light on the yellow-to-blue intensity ratio (Y/B) of Dy3+ emission was demonstrated.

  7. Influence of silver doping on surface defect characteristics of TiO{sub 2}

    Energy Technology Data Exchange (ETDEWEB)

    Tripathi, S. K., E-mail: surya@pu.ac.in [Department of Physics, Center of Advanced Study in Physics, Panjab University, Chandigarh-160 014 (India); Rani, Mamta [Department of Physics, Center of Advanced Study in Physics, Panjab University, Chandigarh-160 014 (India); Department of Physics, DAV University Jalandhar, - 144 001, Punjab (India)

    2015-08-28

    In the present work, we proposed a novel silver doped TiO{sub 2} polyethylene conjugated films to improve the performance of DSSCs. Oxides nanoparticles dispersed in a semiconducting polymer form the active layer of a solar cell. Localized surface plasmon resonance effects associated with spatially dispersed silver (Ag) nanoparticles can be exploited to enhance the light-harvesting efficiency, the photocurrent density and the overall light-to electrical-energy-conversion efficiency of high-area DSSCs based TiO{sub 2} photoanodes. Silver doped titanium dioxide (TiO{sub 2}:Ag) is prepared by sol-gel technique and deposited on fluorine doped indium oxide (FTO) coated glass substrates by using doctor blade technique at 550°C from aqueous solutions of titanium butoxide and silver nitrate precursors. The effect of Ag doping on electrical properties of films is studied. The Ag-TiO{sub 2} films are about 548 times more photosensitive as compare to the pure TiO{sub 2} sample. The presence of metallic Ag nanoparticles and oxygen vacancy on the surface of TiO{sub 2} nanoparticles promotes the separation of photogenerated electron-hole pairs and thus enhances the photosensitivity. Photoconduction mechanism of all prepared samples is investigated by performing transient photoconductivity measurements on TiO{sub 2} and Ag-TiO{sub 2} films keeping intensity of light constant.

  8. Sintering Characteristics of Iron and Cobalt Doped Silver-tungsten Metal-matrix Composites

    Directory of Open Access Journals (Sweden)

    Mahir Es-saheb

    2014-05-01

    Full Text Available Silver-Tungsten composites are known as electrical contact materials used in circuit breakers and industrial relays. The performance of the contact during their service life depends upon high strength and anti-weld properties of these materials. Despite their promising industrial applications, the literature dealing with their production route is still limited. Therefore, a comprehensive study exploring the structure related properties with great emphasis on the sintering process of these materials is carried out. Therefore, in this study, the successful production of a homogeneous composite powder with controlled tungsten particle size using co-precipitation and two stage reduction techniques is followed by the compaction and sintering processes. Thus, high density compacts are produced from Fe and Co doped silver-tungsten powder using powder metallurgy technique. Various environments and sintering conditions, including N2 atmosphere and temperatures up to 1000°C, to obtain successful compacts from both doped and un-doped powders, are investigated. The morphologies and the microstructures of the sintered compacts obtained under the different sintering conditions are characterized and assessed using Scanning Electron Microscopy (SEM. Results display excellent agreement with the published studies and no evidence was found for the activated sintering of silver-tungsten by Fe additions. Also, the homogeneity of silver-tungsten in compacts is completely lost in the Fe-doped powders. However, Co additions help to facilitate the sintering between silver and tungsten whilst retaining a high homogeneity between the silver and tungsten in the sintered product.

  9. Microstructure, microhardness, and biocompatibility characteristics of yttrium hydroxyapatite doped with fluoride.

    Science.gov (United States)

    Toker, S M; Tezcaner, A; Evis, Z

    2011-02-01

    The current study focused on doping of hydroxyapatite (HA) with constant yttrium (Y(3+) ) and varying fluoride (F(-) ) compositions to investigate its microstructure, microhardness, and biocompatibility. HA was synthesized by precipitation method and sintered at 1100°C for 1 h. Y(3+) and F(-) ion dopings resulted in changes in densities. In x-ray diffraction analysis, no secondary phase formation was observed. Lattice parameters decreased upon ion substitutions. Scanning electron microscopy (SEM) results showed that ion addition resulted in smaller grains. In Fourier transform infrared spectroscopy analysis, F(-) ion substitution was confirmed. HA doped with 2.5% Y(3+) and 1% F(-) exhibited the highest microhardness. Y(3+) and F(-) ions improved Saos-2 cell proliferation on discs in Methylthiazolyldiphenyl-tetrazolium (MTT) assay. In SEM analysis, cells attached and proliferated on all disc surfaces. Alkaline phosphatase (ALP) assay showed that cell differentiation on the discs was improved by doping HA with an optimum F(-) amount. Dissolution tests revealed that structural stability of HA was improved with F(-) ion incorporation. The dissolution behavior of fluoridated samples exhibited a parallel pattern with the cell proliferation and differentiation behavior on these samples. Overall, this work shows that fluoride and yttrium cosubstitution into HA HA2.5Y1F was the most promising material for biomedical applications. Copyright © 2010 Wiley Periodicals, Inc.

  10. INFLUENCE OF ANNEALING TEMPERATURE ON CHARACTERISTICS OF BISMUTH DOPED ZINC OXIDE FILMS

    Directory of Open Access Journals (Sweden)

    Sirirat Tubsungnoen Rattanachan

    2013-01-01

    Full Text Available In this study, Bismuth (Bi doped ZnO thin films were deposited on quartz substrates by a sol-gel spin coating method and annealed at different annealing temperatures of 200, 300, 400, 500, 600 and 700°C, respectively. Structural and optical properties of nanocrystalline Bi-doped ZnO film on quartz were investigated by using X-Ray Diffraction (XRD, Scanning Electron Microscope (SEM and UV-VIS spectrophotometer. The high annealing temperature of 700°C as a critical temperature causes the crystallographic reorientation plane in ZnO:Bi nanostructure mostly due to the initial formation of the polycrystalline phase with the inter-grain segregation of Bi dopant atoms. Bi-incorporating ZnO films with an increase in annealing temperature resulted in a blue wavelength shift of the photon absorption edge. The optical band gap of the films was increased from 3.27 eV to 3.34 eV. By decreasing the annealing temperatures from 700 to 200°C, the grain size of Bi-doped ZnO decreased from 18 nm to 8 nm. The effect of the annealing temperature on the electrical conductivity had been considered. The low electrical conductivity of 0.9 (Ω.cm-1 was obtained for ZnO:0.2 film annealed at 600°C with good nano-crystallization. However, the Bi-doped ZnO films prepared by cost-effective spin coating technique provided to have a very high photon absorption coefficient (104-105 cm-1 and did not appreciably affect the optical transparency. ZnO films doped with 0.2% at. Bi can be used as a high resistive buffer layer for solar cell application.

  11. Visible luminescence characteristics of Sm{sup 3+} doped Zinc Alumino Bismuth Borate glasses

    Energy Technology Data Exchange (ETDEWEB)

    Swapna, K.; Mahamuda, Sk. [Department of Physics, K L University, Green Fields, Vaddeswaram 522502, AP (India); Rao, A. Srinivasa, E-mail: drsrallam@yahoo.co.in [Department of Physics, K L University, Green Fields, Vaddeswaram 522502, AP (India); Department of Applied Physics, Delhi Technological University, Delhi 110042 (India); Sasikala, T.; Moorthy, L. Rama [Department of Physics, S V University, Tirupathi 517502, AP (India)

    2014-02-15

    Zinc Alumino Bismuth Borate (ZnAlBiB) glasses at different compositions doped with 1 mol% of Sm{sup 3+} ions were prepared by using the melt quenching technique and investigated by XRD, optical absorption, emission and decay curve analysis to understand the visible luminescence of these glasses. From the absorption spectra the JO parameters are evaluated and are used to calculate the radiative properties such as transition probability, radiative lifetime, branching ratio and absorption cross-sections for various fluorescent levels of Sm{sup 3+} ions. The emission spectra of Sm{sup 3+} ions doped ZnAlBiB glasses show two intense emission bands {sup 4}G{sub 5/2}→{sup 6}H{sub 7/2} (orange) and {sup 4}G{sub 5/2}→{sup 6}H{sub 9/2} (red) for which the stimulated emission cross-section and branching ratios are evaluated to understand the potentiality of these materials as visible lasers. The decay profiles for the {sup 4}G{sub 5/2} fluorescent level of Sm{sup 3+} doped ZnAlBiB glasses have been recorded to measure the quantum efficiency (η) of these glasses. The strong visible emissions, large stimulated emission cross-sections, high branching ratios and good quantum efficiencies observed for the present ZnAlBiB glasses suggest the suitability of these glasses as laser and photonic devices operating in visible region. -- Highlights: • Sm{sup 3+} doped ZnAlBiB glasses have been synthesised using melt quenching technique. • JO theory has been applied to evaluate the radiative properties of Sm{sup 3+} doped ZnAlBiB glasses. • Emission cross-sections have been evaluated for the intense emission transitions. • Quantum efficiency of the ZnAlBiB glasses was measured to understand the suitability of these glasses for lasers.

  12. Ambipolar Organic Phototransistors with p-Type/n-Type Conjugated Polymer Bulk Heterojunction Light-Sensing Layers

    KAUST Repository

    Nam, Sungho

    2016-11-18

    Ambipolar organic phototransistors with sensing channel layers, featuring p-type and n-type conjugated polymer bulk heterojunctions, exhibit outstanding light-sensing characteristics in both p-channel and n-channel sensing operation modes.

  13. High performance p-type segmented leg of misfit-layered cobaltite and half-Heusler alloy

    DEFF Research Database (Denmark)

    Le, Thanh Hung; Van Nong, Ngo; Snyder, Gerald Jeffrey;

    2015-01-01

    In this study, a segmented p-type leg of doped misfit-layered cobaltite Ca2.8Lu0.15Ag0.05Co4O9+δ and half-Heusler Ti0.3Zr0.35Hf0.35CoSb0.8Sn0.2 alloy was fabricated and characterized. The thermoelectric properties of single components, segmented leg, and the electrical contact resistance...... of the joint part were measured as a function of temperature. The output power generation characteristics of segmented legs were characterized in air under various temperature gradients, DT, with the hot side temperature up to 1153 K. At ΔT ≈756 K, the maximum conversion efficiency reached a value of ∼5......%, which is about 65% of that expected from the materials without parasitic losses. The long-term stability investigation for two weeks at the hot and cold side temperatures of 1153/397 K shows that the segmented leg has good durability as a result of stable and low electrical resistance contacts. 2015...

  14. Characteristics of nitrogen-doped carbon nanotubes synthesized by using PECVD and thermal CVD

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Jae-Bum; Kong, So-Jeo; Lee, Sung-Youp; Kim, Je-Han; Lee, Hyeong-Rag [Kyungpook National University, Daegu (Korea, Republic of); Kim, Chang-Duk [Kyungpook National University, Sangju (Korea, Republic of); Min, Bong-Ki [Yeungnam University, Gyeongsan (Korea, Republic of)

    2012-04-15

    Nitrogen-doped carbon nanotubes (N-CNTs) are synthesizd by using plasma-enhanced chemical vapor deposition (PECVD) and thermal chemical vapor deposition (TCVD) because PECVD and TCVD are attractive methods for producing N-CNTs. In this paper, we report the experimental observation of nitrogen incorporation in multiwalled carbon nanotubes grown by using these methods. XPS analysis indicates a shift and broadening of the C 1s spectra peak with increasing disorder induced by nitrogen doping. The N 1s XPS spectra of N-CNTs grown by using PECVD show various structures such as graphitic, pyridinic and N-gaseous forms, while N-CNTs grown by using TCVD have only a graphitic form. Each structure affects the electronic properties of N-CNTs in a different way. TCVD provides a more profitable synthesis method for n-type CNTs while PECVD supports the synthesis of activated N-CNTs with no post-treatment.

  15. Electronic inhomogeneity in n- and p-type PbTe detected by 125Te NMR

    Science.gov (United States)

    Levin, E. M.; Heremans, J. P.; Kanatzidis, M. G.; Schmidt-Rohr, K.

    2013-09-01

    125Te nuclear magnetic resonance spectra and spin-lattice relaxation of n- and p-type PbTe, self-doping narrow band-gap semiconductors, have been studied and compared to those of p-type GeTe. Spin-lattice relaxation in GeTe can be fit by one component, while that in both PbTe samples must be fit by at least two components, showing electronically homogeneous and inhomogeneous materials, respectively. For PbTe-based materials, the spin-lattice relaxation rate 1/T1 increases linearly with carrier concentration. The data for GeTe fall on the same line and allow us to extend this plot to higher concentrations. Long and short T1 components in both PbTe samples reflect “low,” ˜1017 cm-3, and “high,” ˜1018 cm-3, carrier concentration components. Carrier concentrations in both n- and p-type PbTe samples obtained from the Hall and Seebeck effects generally match the “high” carrier concentration component, and to some extent, ignore the “low” one. This demonstrates that the Hall and Seebeck effects may have a limited ability for the determination of carrier concentration in complex thermoelectric PbTe-based and other multicomponent materials.

  16. Quasi-perpetual discharge behaviour in p-type Ge-air batteries.

    Science.gov (United States)

    Ocon, Joey D; Kim, Jin Won; Abrenica, Graniel Harne A; Lee, Jae Kwang; Lee, Jaeyoung

    2014-11-07

    Metal-air batteries continue to become attractive energy storage and conversion systems due to their high energy and power densities, safer chemistries, and economic viability. Semiconductor-air batteries - a term we first define here as metal-air batteries that use semiconductor anodes such as silicon (Si) and germanium (Ge) - have been introduced in recent years as new high-energy battery chemistries. In this paper, we describe the excellent doping-dependent discharge kinetics of p-type Ge anodes in a semiconductor-air cell employing a gelled KOH electrolyte. Owing to its Fermi level, n-type Ge is expected to have lower redox potential and better electronic conductivity, which could potentially lead to a higher operating voltage and better discharge kinetics. Nonetheless, discharge measurements demonstrated that this prediction is only valid at the low current regime and breaks down at the high current density region. The p-type Ge behaves extremely better at elevated currents, evident from the higher voltage, more power available, and larger practical energy density from a very long discharge time, possibly arising from the high overpotential for surface passivation. A primary semiconductor-air battery, powered by a flat p-type Ge as a multi-electron anode, exhibited an unprecedented full discharge capacity of 1302.5 mA h gGe(-1) (88% anode utilization efficiency), the highest among semiconductor-air cells, notably better than new metal-air cells with three-dimensional and nanostructured anodes, and at least two folds higher than commercial Zn-air and Al-air cells. We therefore suggest that this study be extended to doped-Si anodes, in order to pave the way for a deeper understanding on the discharge phenomena in alkaline metal-air conversion cells with semiconductor anodes for specific niche applications in the future.

  17. Effect of thermal treating temperature on characteristics of silver-doped titania

    Institute of Scientific and Technical Information of China (English)

    CHAI Li-yuan; WEI Shun-wen; PENG Bing; LI Zhu-ying

    2008-01-01

    The silver-doped titania antibacterial agent was synthesized by mixing silver nitrate and the precursor of titania. Effects of thermal treatment on the properties of the silver-doped titania powders were investigated by thermal gravimeter/differential thermal analyzer(TG/DTA), scanning electron microscope(SEM), and X-ray diffractometer(XRD), respectively. The results show that the anatase phase forms in titania when the powder is calcined at 400 ℃. With the increase of the calcination temperature from 400 to 700 ℃ , the grains of titania agglomerate and the particle size increases from 14 to 23 nm, and the specific surface area decreases from 63 to 38m2g. As the powder is calcined at 700 ℃, titania starts to transform from anatase to rutile phase. The release rate of silver ion of powder treated at the relatively low temperature is larger than that of powder treated at the relatively high temperature. The antibacterial tests show that the antibacterial activity of silver-doped titania powders is excellent against E.coli and S. aureus, and the antibacterial activity of powders weakens with the increase of the calcination temperature.

  18. Electrical Characteristics and Microstructures of Sm2O3-Doped Bi4Ti3O12 Ceramics

    Institute of Scientific and Technical Information of China (English)

    陈敏; 王豫; 刘祖黎; 董亮; 羊新胜; 姚凯伦

    2004-01-01

    We investigate the electrical properties of Sm-doped Bi4-xSmx Ti3O12 (BST) ceramics prepared by a conventional electroceramic technique. The x-ray diffraction analysis reveals the Bi-layered perovskite structure in all samples.The SEM micrographs show randomly oriented and plate-like morphology. For the samples with x = 0.4 and 1.0,the current-voltage characteristics exhibit negative differential resistance behaviour and the P-V hysteresis loops are characterized by large leakage current, whereas for the samples with x = 0.6 and 0.8, the current-voltage characteristics show simple ohmic behaviour and the P-V hysteresis loops are of the saturated and undistorted hysteresis. The remanent polarization and coercive field of the BST ceramic with x = 0.8 are above 32μC/cm2and 70kV/cm, respectively.

  19. Realization of stable p-type ZnO thin films using Li-N dual acceptors

    Energy Technology Data Exchange (ETDEWEB)

    Rao, T. Prasada, E-mail: prasadview@gmail.com [Advanced Materials Laboratory, Department of Physics, National Institute of Technology, Tiruchirappalli- 620 015 (India); Kumar, M.C. Santhosh, E-mail: santhoshmc@nitt.edu [Advanced Materials Laboratory, Department of Physics, National Institute of Technology, Tiruchirappalli- 620 015 (India)

    2011-09-01

    Highlights: > We have presented a promising Li-N dual acceptor doping method to realize p-type ZnO films via spray pyrolysis. > The influence of concentration of Li-N on the structural, electrical, and optical properties of p-type ZnO:(Li, N) films were investigated in detail. > It is found that (Li, N):ZnO films deposited on glass substrate show the preferential orientation of (002) plane. > The Hall Effect measurements exhibited p-type behaviour on (Li, N):ZnO thin films and the stability of the samples were verified by aging studies. - Abstract: Lithium and nitrogen dual acceptors-doped p-type ZnO thin films have been prepared using spray pyrolysis technique. The influence of dual acceptor (Li, N) doping on the structural, electrical, and optical properties of (Li, N):ZnO films are investigated in detail. The (Li, N):ZnO films exhibit good crystallinity with a preferred c-axis orientation. From AFM studies, it is found that the surface roughness of the thin films increases with the increase of doping percentage. The Hall Effect measurements showed p-type conductivity. The Hall measurements have been performed periodically up to seven months and it is observed that the films show p-type conductivity throughout the period of observation. The samples with Li:N ratio of 8:8 mol% showed the lowest resistivity of 35.78 {Omega} cm, while sample with Li:N ratio of 6:6 mol% showed highest carrier concentration. The PL spectra of (Li, N):ZnO films show a strong UV emission at room temperature. Furthermore, PL spectra show low intensity in deep level transition, indicating a low density of native defects. This indicates that the formation of intrinsic defects is effectively suppressed by dual acceptor (Li, N) doping in ZnO thin films. The chemical bonding states of N and Li in the films were examined by XPS analysis.

  20. Temperature dependent electrical characteristics of Pt Schottky barriers fabricated on lightly and highly doped n-type 4H-SiC

    Science.gov (United States)

    Huang, Lingqin; Wang, Dejun

    2015-11-01

    The temperature dependent electronic characteristics of Pt Schottky barriers fabricated on lightly and relatively highly doped n-type 4H-SiC (1 × 1016 and 1 × 1018 cm-3) are comparatively investigated. It is found that the abnormal temperature dependence of barrier height and ideality factor estimated from the thermionic emission (TE) model for both lightly and highly doped samples could be successfully explained in terms of Gaussian distribution of inhomogeneous barrier heights. However, the estimated mean barrier height according to Gaussian distribution for the highly doped sample is much lower than the actual mean value from the capacitance-voltage (C-V) measurements. Interestingly, the values of barrier height from the thermionic field emission (TFE) model are found to be close to those from the C-V measurements, indicating that the TFE model is more appropriate to explain the electrical transport for the highly doped sample.

  1. Raman spectra of p-type transparent semiconducting Cr{sub 2}O{sub 3}:Mg

    Energy Technology Data Exchange (ETDEWEB)

    Fleischer, Karsten, E-mail: fleisck@tcd.ie; Caffrey, David; Farrell, Leo; Norton, Emma; Mullarkey, Daragh; Arca, Elisabetta; Shvets, Igor V.

    2015-11-02

    We present an analysis of the Raman spectra of p-type transparent conducting Cr{sub 2}O{sub 3}:Mg grown by various techniques including spray pyrolysis, pulsed laser deposition, molecular beam epitaxy and reactive magnetron sputtering. The best performing films show a distinct broad range Raman signature related to defect-induced vibrational modes not seen in stoichiometric, undoped material. Our comparative study demonstrates that Raman spectroscopy can quantify unwanted dopant clustering in the material at high Mg concentrations, while also being sensitive to the Mg incorporation site. By correlating the Raman signature to the electrical properties of the films, growth processes can be optimised to give the best conducting films and the local defect structure for effective p-type doping can be studied. - Highlights: • Mg doping in Cr{sub 2}O{sub 3} can lead to dopant clustering in MgCr{sub 2}O{sub 4} phase. • Post-annealing in oxygen can dissolve these clusters improving doping. • High oxygen pressures during growth can prevent dopant clustering. • Raman spectroscopy is a powerful tool to assist growth optimization in p-type oxides.

  2. Effects of growth temperature on characteristics of Mg-delta-doped p-AlInGaN epi-layers

    Science.gov (United States)

    Wu, Zili; Zhang, Xiong; Liang, Tianhui; Feng, Zhe Chuan; Cui, Yiping

    2016-10-01

    The Mg-delta-doped p-AlInGaN epi-layers were successfully grown on c-plane sapphire substrates by metal-organic chemical vapor deposition (MOCVD). The effects of growth temperature on the characteristics of the Mg-delta-doped p-AlInGaN epi-layers were investigated in detail with scanning electron microscopy (SEM), high resolution X-ray diffraction (HR-XRD), photoluminescence (PL), and Hall effect measurements. The characterization results showed that the surfaces of the p-AlInGaN epi-layers were textured with a high density of hexagonal pits, which was found to be strongly dependent on the growth temperature. This feature should be very helpful to enhance the light extraction efficiency when the p-AlInGaN epi-layers were used as the top p-contact layer for making AlInGaN-based deep-ultraviolet light-emitting diodes (DUV-LEDs). In addition, the low temperature PL spectra demonstrated that the Mg-H complex-related broad emission band which was observed for the as-grown p-AlInGaN epi-layer samples was not resolvable for the annealed samples. This fact implies that the Mg-H complex can be effectively dissociated by annealing process. Moreover, owing to the improved In incorporation efficiency and crystalline quality for the p-AlInGaN epi-layers, a hole concentration as high as 1.69 × 1017 cm-3 was achieved with the reformed Mg-delta-doping technique developed in this study.

  3. Adjustable hydrazine modulation of single-wall carbon nanotube network field effect transistors from p-type to n-type

    Science.gov (United States)

    Dai, Ruixuan; Xie, Dan; Xu, Jianlong; Sun, Yilin; Sun, MengXing; Zhang, Cheng; Li, Xian

    2016-11-01

    Single-wall carbon nanotube (SWCNT) network field effect transistors (FETs), which show decent p-type electronic properties, have been fabricated. The use of hydrazine as an aqueous solution and a strong n-type dopant for the SWCNTs is demonstrated in this paper. The electrical properties are obviously tuned by hydrazine treatment at different concentrations on the surface of the SWCNT network FETs. The transport behavior of SWCNTs can be modulated from p-type to n-type, demonstrating the controllable and adjustable doping effect of hydrazine. With a higher concentration of hydrazine, more electrons can be transferred from the hydrazine molecules to the SWCNT network films, thus resulting in a change of threshold voltage, carrier mobility and on-current. By cleaning the device, the hydrazine doping effects vanish, which indicates that the doping effects of hydrazine are reversible. Through x-ray photoelectron spectroscopy (XPS) characterization, the doping effects of hydrazine have also been studied.

  4. Insights into electrical characteristics of silicon doped hafnium oxide ferroelectric thin films

    Science.gov (United States)

    Zhou, Dayu; Müller, J.; Xu, Jin; Knebel, S.; Bräuhaus, D.; Schröder, U.

    2012-02-01

    Silicon doped hafnium oxide thin films were recently discovered to exhibit ferroelectricity. In the present study, metal-ferroelectric-metal capacitors with Si:HfO2 thin films as ferroelectric material and TiN as electrodes have been characterized with respect to capacitance and current density as functions of temperature and applied voltage. Polarity asymmetry of the frequency dependent coercive field was explained by interfacial effects. No ferroelectric-paraelectric phase transition was observed at temperatures up to 478 K. Clear distinctions between current evolutions with or without polarization switching were correlated to the time competition between the measurement and the response of relaxation mechanisms.

  5. Fundamental electrochemiluminescence characteristics of fluorine-doped tin oxides synthesized by sol-gel combustion.

    Science.gov (United States)

    Moon, B H; Chaoumead, A; Sung, Y M

    2013-10-01

    Fluorine-doped tin oxide (FTO) materials synthesized by sol-gel combustion method were investigated for electrochemical luminescence (ECL) application. Effects of sol-gel combustion conditions on the structures and morphology of the porous FTO (p-FTO) materials were studied. ECL efficiency of p-FTO-based cell was about 251 cd/m2 at 4 V bias, which is higher than the sell using only FTO electrodes (102.8 cd/m2). The highest intensity of the emitting light was obtained at the wavelength of about 610 nm. The porous FTO layer was effective for increasing ECL intensities.

  6. Doping characteristics of Si-doped n-GaN Epilayers grown by low-pressure metal-organic chemical-vapor deposition

    CERN Document Server

    Noh, S K; Park, S E; Lee, I H; Choi, I H; Son, S J; Lim, K Y; Lee, H J

    1998-01-01

    We studied doping behaviors through analysis of the electronic properties of a series of undoped and Si-doped GaN epilayers grown on (0001) sapphire substrates by the low-pressure metal-organic chemical-vapor deposition (LP-MOCVD) technique. The doping efficiency was in the range of 0.4 - 0.8, and an empirical relation expressed as eta = 0.45 log[Si] - 8.1 was obtained. The temperature dependence of carrier concentration showed that the donor activation energy monotonically decreased from 17.6 meV to almost zero as the doping level increased. We suggest that the reduction in the activation energy is related not to autodoped defect centers but to doped Si donors and that the behavior originates from the formation of an impurity band. On the basis of an abrupt change in the compensation ratio from 0.9 to 0.5 by Si-doping, an exceptional difference in the Hall mobility between the undoped and the Si-doped films is explained by a mixed conduction mechanism of electrons and holes.

  7. Microstructures and characteristics of deep trap levels in ZnO varistors doped with Y2O3

    Institute of Scientific and Technical Information of China (English)

    2009-01-01

    In this paper discussions on ZnO based varistor ceramics doped with different ratios of Y2O3 are presented.Analysis on the phase and microstructures of the samples indicates that an additional phase is detected in the samples doped with Y2O3,and the average grain size of the specimens decreases from about 9.2μm to 4.5μm,with an increase in the addition of Y2O3 from 0 mol%to 3 mol%.The corresponding varistor’s voltage gradient markedly increases from 462 V/mm to 2340 V/mm,while the nonlinear coefficient decreases from 22.3 to 11.5,respectively.Furthermore,the characteristics of deep trap levels in these ZnO samples are investigated by measuring their dielectric spectroscopies.The trap energy level and capture cross section evaluated by relaxation peak of the Cole-Cole plot vary slightly as the addition of Y2O3 increases.These traps may be ascribed to the intrinsic defects of ZnO lattice.

  8. Modulation transfer function characteristic of uniform-doping transmission-mode GaAs/GaAlAs photocathode

    Institute of Scientific and Technical Information of China (English)

    Ren Ling; Chang Ben-Kang

    2011-01-01

    The resolution characteristic can be obtained by the modulation transfer function(MTF)of a GaAs/GaAlAs photocathode.After establishing the theoretical model of GaAs(100)-oriented atomic configuration and the formula for the ionized impurity scattering of the non-equilibrium carriers,this paper calculates the trajectories of photoelectrons in a photocathode.Thus the distribution of photoelectron spots on the emit-face is obtained,which is namely the point spread function.The MTF is obtained by Fourier transfer of the line spread function obtained from the point spread function.The MTF obtained from these calculations is shown to depend heavily on the electron diffusion length,and enhanced considerably by decreasing the electron diffusion length and increasing the doping concentration.Furthermore,the resolution is enhanced considerably by increasing the active-layer thickness,especially at high spatial frequencies.The best spatial resolution is 860 lp/mm,for the GaAs photocathode of doping concentration 1×1019cm-3,electron diffusion length 3.6 μm and the active-layer thickness 2 μm,under the 633-nm light irradiated. This research will contribute to the future improvement of the cathode's resolution for preparing a high performance GaAs photocathode,and improve the resolution of a low light level image intensifier.

  9. Pd-Doped SnO2-Based Sensor Detecting Characteristic Fault Hydrocarbon Gases in Transformer Oil

    Directory of Open Access Journals (Sweden)

    Weigen Chen

    2013-01-01

    Full Text Available Methane (CH4, ethane (C2H6, ethylene (C2H4, and acetylene (C2C2 are important fault characteristic hydrocarbon gases dissolved in power transformer oil. Online monitoring these gaseous components and their generation rates can present the operational state of power transformer timely and effectively. Gas sensing technology is the most sticky and tricky point in online monitoring system. In this paper, pure and Pd-doped SnO2 nanoparticles were synthesized by hydrothermal method and characterized by X-ray powder diffraction, field-emission scanning electron microscopy, and energy dispersive X-ray spectroscopy, respectively. The gas sensors were fabricated by side-heated preparation, and their gas sensing properties against CH4, C2H6, C2H4, and C2H2 were measured. Pd doping increases the electric conductance of the prepared SnO2 sensors and improves their gas sensing performances to hydrocarbon gases. In addition based on the frontier molecular orbital theory, the highest occupied molecular orbital energy and the lowest unoccupied molecular orbital energy were calculated. Calculation results demonstrate that C2H4 has the highest occupied molecular orbital energy among CH4, C2H6, C2H4, and C2H2, which promotes charge transfer in gas sensing process, and SnO2 surfaces capture a relatively larger amount of electric charge from adsorbed C2H4.

  10. Linear and nonlinear optical characteristics of Te nanoparticles-doped germanate glasses

    Science.gov (United States)

    Xu, Zhousu; Guo, Qiangbing; Liu, Chang; Ma, Zhijun; Liu, Xiaofeng; Qiu, Jianrong

    2016-10-01

    Te nanoparticles (NPs)-doped GeO2-MgO-B2O3-Al2O3-TeO2 glasses were prepared by the conventional melt-quenching method. Based on X-ray photoelectron spectroscopy, Raman spectroscopy and transmission electron microscope observation, the coloration of the glass at high TeO2 concentration is ascribed to the precipitation of elemental Te NPs with a size of 5-10 nm in the germanate glass. Optical absorption spectra and nonlinear optical (NLO) properties of the glass samples were analyzed by UV-3600 spectrophotometry and Z-scan technique, respectively. The nonlinear absorption coefficient ( β) and the imaginary part of the third-order NLO susceptibility (Im χ (3)) were estimated to be 1.74 cm/GW and 1.142 × 10-12 esu for laser power of 95 μW, respectively. Due to the excellent NLO properties, the Te NPs-doped germanate glasses may have potential applications for ultrafast optical switch and photonics.

  11. Tailoring structure and magnetic characteristics of strontium hexaferrite via Al doping engineering

    Science.gov (United States)

    Wang, H. Z.; Hai, Y. N.; Yao, B.; Xu, Y.; Shan, L.; Xu, L.; Tang, J. L.; Wang, Q. H.

    2017-01-01

    Emerging structure and magnetic properties of Al3+-modified SrFe12O19 M-type hexaferrite system (SrAlxFe12-xO19) had been studied in detail via doping engineering. With Al3+ ion nominal content ranging from 0 to 4 (0≤x≤4), the lattice parameters decrease due to the substitution of Fe3+ ions by smaller Al3+ ions, and the magnetization shows a continuous reduction with the increasing of Al content. For the coercivity, its value initially increases, reaching a maximum value of 16,876.9 Oe at x=3, and then reduces with the Al content further increase. When all the Fe3+ ions (x=4) are replaced by Al3+ ions, the net magnetic moment will be closed to zero, that will weaken the exchange interaction between Fe3+ ions, resulting in decrease of coercivity sharply and transformation ferrimagnetism into antiferromagnetism. The mechanism of the improvement of the magnetic properties induced by Al doping is discussed in the present work.

  12. Photoluminescence characteristics of dye-doped polymer nanofibers excited by surface plasmon polaritons

    Science.gov (United States)

    Kaminose, Ryohei; Ishii, Yuya; Aihara, Takuma; Takeda, Ayumi; Fukuda, Mitsuo

    2013-09-01

    Grating inscription in azo-dye doped polymers is an interesting phenomenon because of its high diffraction performance and applicability to real-time 3D displays. Although some of these materials were investigated under no external electric field with symmetric optical alignments in preceding studies, they often showed a phase shift of periodic modulation of refractive index from the interference fringe formed by irradiation beams, resulting in asymmetric energy exchange between two coupled beams. The mechanism of the behavior has been usually attributed to the molecular motions triggered by trans-cis isomerization, but their details are still unknown. Therefore, studies on temporal evolution of the process and their translation into physical meaning are necessary. In order to investigate the evolution of grating inscription and phase shift, several methods have been developed. In this study, we analyzed the coupled wave equations proposed by Kogelnik, and derived general solution applicable to the system with both phase and amplitude gratings with arbitrary phase relationship. We showed that the analysis based on the equation can give a direct evidence of the phase shift between the phase and amplitude gratings if it exists. This method was applied to the fringe pattern inscribed in thick films of PMMA doped with an azo-carbazole dye, showing that observed signals indicated the phase deviation between two types of gratings.

  13. Validity of Rigid-Band Approximation in the Study of Thermoelectric Properties of p-Type FeNbSb-Based Half-Heusler Compounds

    Science.gov (United States)

    Fang, Teng; Zheng, Shuqi; Zhou, Tian; Chen, Hong; Zhang, Peng

    2016-11-01

    Recently, we calculated the thermoelectric properties of p-type FeNbSb half-Heusler compounds by employing the rigid-band approximation (RBA) (Fang et al., RSC Adv 6:10507-10512, 2016). Traditionally, the RBA is used to understand and guide doping in semiconductors. It is therefore important to verify its reliability. To this end, we have investigated the validity of the RBA in heavily doped p-type FeNbSb by calculating the electronic structure and Seebeck coefficient of pure and Ti-, Zr-, Hf-, and Ce-doped FeNbSb using ab initio calculations. The results confirm that Ti, Zr, and Hf doping at Nb site shows rigid-band-like behavior, unlike Ce doping, which changes the density of states. We also calculated the electrical transport properties of the doped systems, indicating that the power factor of Ce-doped FeNbSb is lower than those of Ti-, Zr-, and Hf-doped FeNbSb.

  14. Fabrication and characterization of silicon nanowire p-i-n MOS gated diode for use as p-type tunnel FET

    Science.gov (United States)

    Brouzet, V.; Salem, B.; Periwal, P.; Rosaz, G.; Baron, T.; Bassani, F.; Gentile, P.; Ghibaudo, G.

    2015-11-01

    In this paper, we present the fabrication and electrical characterization of a MOS gated diode based on axially doped silicon nanowire (NW) p-i-n junctions. These nanowires are grown by chemical vapour deposition (CVD) using the vapour-liquid-solid (VLS) mechanism. NWs have a length of about 7 \\upmu {m} with 3 \\upmu {m} of doped regions (p-type and n-type) and 1 \\upmu {m} of intrinsic region. The gate stack is composed of 15 nm of hafnium dioxide ({HfO}2), 80 nm of nickel and 120 nm of aluminium. At room temperature, I_{{on}} =-52 {nA}/\\upmu {m} (V_{{DS}}=-0.5 {V}, V_{{GS}}=-4 {V}), and an I_{{on}}/I_{{off}} ratio of about 104 with a very low I_{{off}} current has been obtained. Electrical measurements are carried out between 90 and 390 K, and we show that the I on current is less temperature dependent below 250 K. We also observe that the ON current is increasing between 250 and 390 K. These transfer characteristics at low and high temperature confirm the tunnelling transport mechanisms in our devices.

  15. Hopping conduction in p-type MoS{sub 2} near the critical regime of the metal-insulator transition

    Energy Technology Data Exchange (ETDEWEB)

    Park, Tae-Eon; Jang, Chaun, E-mail: cujang@kist.re.kr, E-mail: presto@kist.re.kr [Center for Spintronics, Korea Institute of Science and Technology, Seoul 136-791 (Korea, Republic of); Suh, Joonki; Wu, Junqiao [Department of Materials Science and Engineering, University of California, Berkeley, California 94720 (United States); Seo, Dongjea [Center for Spintronics, Korea Institute of Science and Technology, Seoul 136-791 (Korea, Republic of); Department of Materials Science and Engineering, Yonsei University, Seoul 120-749 (Korea, Republic of); Park, Joonsuk [Department of Materials Science and Engineering, Stanford University, Stanford, California 94305 (United States); Lin, Der-Yuh [Department of Electronics Engineering, National Changhua University of Education, Changhua 50007, Taiwan (China); Huang, Ying-Sheng [Department of Electronics Engineering, National Taiwan University of Science and Technology, Taipei 10607, Taiwan (China); Choi, Heon-Jin [Department of Materials Science and Engineering, Yonsei University, Seoul 120-749 (Korea, Republic of); Chang, Joonyeon, E-mail: cujang@kist.re.kr, E-mail: presto@kist.re.kr [Center for Spintronics, Korea Institute of Science and Technology, Seoul 136-791 (Korea, Republic of); Department of Nanomaterials Science and Engineering, Korea University of Science and Technology, Daejeon 305-350 (Korea, Republic of)

    2015-11-30

    We report on temperature-dependent charge and magneto transport of chemically doped MoS{sub 2}, p-type molybdenum disulfide degenerately doped with niobium (MoS{sub 2}:Nb). The temperature dependence of the electrical resistivity is characterized by a power law, ρ(T) ∼ T{sup −0.25}, which indicates that the system resides within the critical regime of the metal-insulator (M-I) transition. By applying high magnetic field (∼7 T), we observed a 20% increase in the resistivity at 2 K. The positive magnetoresistance shows that charge transport in this system is governed by the Mott-like three-dimensional variable range hopping (VRH) at low temperatures. According to relationship between magnetic-field and temperature dependencies of VRH resistivity, we extracted a characteristic localization length of 19.8 nm for MoS{sub 2}:Nb on the insulating side of the M-I transition.

  16. Spectroscopic and luminescence characteristics of erbium doped TNZL glass for lasing materials

    Energy Technology Data Exchange (ETDEWEB)

    Assadi, A.A. [Laboratoire Géoressources, Matériaux, Environnement et Changements Globaux, Faculty of Sciences of Sfax, Sfax University, 3018 Sfax (Tunisia); Otto-Schott-Institut, Jena University, Fraunhoferstrasse 6, 07743 Jena (Germany); Damak, K., E-mail: Kamel.Damak@fss.rnu.tn [Laboratory of Radio Analysis and Environment, Sfax University, ENIS 3038 Sfax (Tunisia); Lachheb, R. [Laboratoire Géoressources, Matériaux, Environnement et Changements Globaux, Faculty of Sciences of Sfax, Sfax University, 3018 Sfax (Tunisia); Otto-Schott-Institut, Jena University, Fraunhoferstrasse 6, 07743 Jena (Germany); Herrmann, A. [Otto-Schott-Institut, Jena University, Fraunhoferstrasse 6, 07743 Jena (Germany); Yousef, E. [Department of Physics, Faculty of Sciences, Al Azhar University, Assuit Branch, Assuit (Egypt); Department of Physics, Faculty of Sciences, King Khalid University, P.O. Box 9004, Abha (Saudi Arabia); Rüssel, C. [Otto-Schott-Institut, Jena University, Fraunhoferstrasse 6, 07743 Jena (Germany); Maâlej, R. [Laboratoire Géoressources, Matériaux, Environnement et Changements Globaux, Faculty of Sciences of Sfax, Sfax University, 3018 Sfax (Tunisia)

    2015-01-25

    Highlights: • A new thermally stable tellurite glass (TNZL:Er) was synthesized by melt-quenching method. • A complete Judd–Ofelt spectroscopic evaluation of the TNZL:Er glass is presented. • A high gain coefficient and emission cross section are obtained in the 1.53 μm region. • The TNZL:Er glass would be a potential laser operation around 1.53 μm emission as well as to generate green light in color display devices. - Abstract: Rare earth-doped tellurite glasses are very attractive materials for laser and photonic applications, such as optical amplifiers. They have a good glass stability which leads to an enhancement of the radiative transition. In the present study, a new transparent bulk glass with the composition 85TeO{sub 2}–5Nb{sub 2}O{sub 5}–5ZnO–5LiF doped with 1% Er{sub 2}O{sub 3} (TNZL doped with Er{sup 3+}) was prepared by using the conventional melt-quenching method. The thermal stability and the crystallization behavior of the glass were investigated using Differential Scanning Calorimetry (DSC), X-ray diffraction and Raman spectroscopy. Furthermore, UV–vis–NIR spectra were determined. From these Judd–Ofelt parameters, Ω{sub k} (k = 2, 4, 6) of Er{sup 3+} were evaluated. The oscillator strength type transition probabilities, spectroscopic quality factors, branching ratio and radiative lifetimes of several excited states of Er{sup 3+} were predicted using intensity Judd–Ofelt parameters. The down conversion, up conversion and near infrared luminescence of the Er{sup 3+} ions in TNZL glass were investigated. Green and red emissions corresponding to ({sup 2}H{sub 11/2}, {sup 4}S{sub 3/2}) → {sup 4}I{sub 15/2} and {sup 4}F{sub 9/2} → {sup 4}I{sub 15/2} transitions were observed.

  17. Thermoluminescence characteristics of different dimensions of Ge-doped optical fibers in radiation dosimetry

    Energy Technology Data Exchange (ETDEWEB)

    Begum, M.; Mizanur R, A. K. M.; Abdul R, H. A.; Yusoff, Z. [Multimedia University, Faculty of Engineering, 63100 Cyberjaya, Selangor Darul Ehsan (Malaysia); Begum, M. [Bangladesh Atomic Energy Commission, E-12/A, Agargaon, Sher-e-Blanga Nagar Dhaka-1207 (Bangladesh); Mat-Sharif, K. A. [Lingkaran Teknokrat Timur, Telekom Research and Development, 63000 Cyberjaya, Selangor Darul Ehsan (Malaysia); Amin, Y. M. [University of Malaya, Faculty of Science, Depatment of Physics, 50603 Kuala Lumpur (Malaysia); Bradley, D. A., E-mail: go2munmun@yahoo.com [University of Surrey, Department of Physics, Guildford GU2 7XH (United Kingdom)

    2014-08-15

    Important thermoluminescence (Tl) properties of five (5) different core sizes Ge doped optical fibers have been studied to develop new Tl material with better response. These are drawn from same preform applying different speed and tension during drawing phase. The results of the investigations are also compared with most commonly used standard TLD-100 chips (LiF:Mg,Ti) and commercial multimode Ge doped optical fiber (Yangtze Optical Fiber, China). Scanning Electron Microscope (Sem) and EDX analysis of the fibers are also performed to map Ge distribution across the deposited region. Standard Gamma radiation source in SSDL (Secondary Standard Dosimetry Lab) was used for irradiation covering dose range from 1 Gy to 10 Gy. The essential dosimetric parameters that have been studied are Tl linearity, reproducibility and fading. Prior to irradiation all samples ∼0.5 cm length are annealed at temperature of 400 grades C for 1 hour period to standardize their sensitivities and background. Standard TLD-100 chips are also annealed for 1 hour at 400 grades C and subsequently 2 hours at 100 grades C to yield the highest sensitivity. Tl responses of these fibers show linearity over a wide gamma radiation dose that is an important property for radiation dosimetry. Among all fibers used in this study, 100 μm core diameter fiber provides highest response that is 2.6 times than that of smallest core (20 μm core) optical fiber. These fiber-samples demonstrate better response than commercial multi-mode optical fiber and also provide low degree of fading about 20% over a period of fifteen days for gamma radiation. Effective atomic number (Z{sub eff}) is found in the range (13.25 to 13.69) that is higher than soft tissue (7.5) however within the range of human-bone (11.6-13.8). All the fibers can also be re-used several times as a detector after annealing. Tl properties of the Ge-doped optical fibers indicate promising applications in ionizing radiation dosimetry. (author)

  18. Sol-Gel Synthesis and Luminescent Characteristic of Doped Eu3+ Silicate-Silica Phosphor

    Institute of Scientific and Technical Information of China (English)

    Yang Liangzhun; Yu Xibin; Yang Shiping; Zhou Pingle; Tang Jinfeng; Peng Xiudong

    2005-01-01

    Eu-doped silicate complex gel nano-particles was obtained by sol-gel process and characterized with TEM, XRD, PL, etc. The well dispersed particles have particle size about 60~70 nm with specific surface area 98.3 m2·g-1. The complex gel phosphor gives a broad and strong luminescent emission originating from Eu2+ ions centered at 425 nm. The emission band shifts to shorter wavelengths with the increase of the ion radius of the alkali earth metals, but the band becomes red-shifted gradually with the increase of the ion radius of the alkali metals(except Li+). These divalent Eu2+ ions originate in inequivalent substitution of the alkaline earth ions. The presence of alkaline ions is favorable for the increasing emission intensity of the Eu2+ and lowering crystalline temperature of the silicate complex gel.

  19. The photorefractive characteristics of bismuth-oxide doped lithium niobate crystals

    Energy Technology Data Exchange (ETDEWEB)

    Zheng, Dahuai; Yao, Jiaying [School of Physics, Nankai University, Tianjin 300071 (China); Collaborative Innovation Center of Chemical Science and Engineering (Tianjin), Tianjin 300072 (China); Kong, Yongfa, E-mail: kongyf@nankai.edu.cn [School of Physics, Nankai University, Tianjin 300071 (China); MOE Key Laboratory of Weak-Light Nonlinear Photonics and TEDA Applied Physics School, Nankai University, Tianjin 300457 (China); R and D Center, Taishan Sports Industry Group, Leling 253600 (China); Collaborative Innovation Center of Chemical Science and Engineering (Tianjin), Tianjin 300072 (China); Liu, Shiguo [School of Physics, Nankai University, Tianjin 300071 (China); Zhang, Ling; Chen, Shaolin [MOE Key Laboratory of Weak-Light Nonlinear Photonics and TEDA Applied Physics School, Nankai University, Tianjin 300457 (China); Xu, Jingjun [School of Physics, Nankai University, Tianjin 300071 (China); MOE Key Laboratory of Weak-Light Nonlinear Photonics and TEDA Applied Physics School, Nankai University, Tianjin 300457 (China); Collaborative Innovation Center of Chemical Science and Engineering (Tianjin), Tianjin 300072 (China)

    2015-01-15

    Bismuth-doped lithium niobate (LN:Bi) crystals were grown by Czochralski method and their optical damage resistance, photorefraction, absorption spectra, and defect energy levels were investigated. The experimental results indicate that the photorefractive properties of LN:Bi were enhanced as compared with congruent one, the photorefractive response time was greatly shortened, the photorefractive sensitivity was increased, and the diffraction efficiency of near-stoichiometric LN:Bi (SLN:Bi) reached 31.72% and 49.08% at 532 nm and 488 nm laser, respectively (light intensity of 400 mW/cm{sup 2}). An absorption peak at about 350 nm was observed in the absorption spectrum of LN:Bi. And the defect energy levels simulation indicates new defect levels appear in the forbidden gap of LN:Bi crystals. Therefore bismuth can act as photorefractive centers in LN crystals.

  20. The photorefractive characteristics of bismuth-oxide doped lithium niobate crystals

    Directory of Open Access Journals (Sweden)

    Dahuai Zheng

    2015-01-01

    Full Text Available Bismuth-doped lithium niobate (LN:Bi crystals were grown by Czochralski method and their optical damage resistance, photorefraction, absorption spectra, and defect energy levels were investigated. The experimental results indicate that the photorefractive properties of LN:Bi were enhanced as compared with congruent one, the photorefractive response time was greatly shortened, the photorefractive sensitivity was increased, and the diffraction efficiency of near-stoichiometric LN:Bi (SLN:Bi reached 31.72% and 49.08% at 532 nm and 488 nm laser, respectively (light intensity of 400 mW/cm2. An absorption peak at about 350 nm was observed in the absorption spectrum of LN:Bi. And the defect energy levels simulation indicates new defect levels appear in the forbidden gap of LN:Bi crystals. Therefore bismuth can act as photorefractive centers in LN crystals.

  1. Effect of chitosan addition to characteristic and antimicrobial activity of zinc doped hydroxyapatite

    Science.gov (United States)

    Rasyida, A.; Wicaksono, S. T.; Pradita, N. N.; Ardhyananta, H.; Purnomo, A.

    2017-07-01

    Hydroxyapatite (HAp) doping with zinc was prepared using sol gel method; different chitosan content were further added to prepare the composite, namely 10, 15 and 20% wt. The samples were characterized using FTIR, XRD, SEM-EDX, and AAS. In vitro antimicrobial activities of the composite were evaluated against gram positive and negative bacteria. FTIR results revealed that there were no important changes in the structure of composite, while 10% wt of chitosan in composite shows the highest inhibition zone against Escherichia coli after 24 h incubation. In addition, after 7 days of immersion in simulated body fluid, there were apatite formations in the surface of the composite. These might indicate that this composite could be used as a material candidate for bone substitute applications.

  2. Magnesium doped GaN grown by MOCVD

    Energy Technology Data Exchange (ETDEWEB)

    Guarneros, C., E-mail: cesyga@yahoo.com.mx [Ingenieria Electrica, Seccion Electronica del Estado Solido, Centro de Investigacion y de Estudios Avanzados del Instituto Politecnico Nacional, Av. I.P.N. 2508, San Pedro Zacatenco, 07360 Mexico, D.F. (Mexico); Sanchez, V. [Ingenieria Electrica, Seccion Electronica del Estado Solido, Centro de Investigacion y de Estudios Avanzados del Instituto Politecnico Nacional, Av. I.P.N. 2508, San Pedro Zacatenco, 07360 Mexico, D.F. (Mexico)

    2010-10-25

    We have studied the optical and electrical characteristics of undoped and doped GaN layers. The n- and p-type layers have been prepared by low pressure MOCVD technique. Photoluminescence (PL) studies were carried at low temperature. In the PL spectra of undoped GaN layer, a low intensity band edge emission and a broad yellow emission band were observed. The donor-acceptor pair (DAP) emission and its phonon replicas were observed in Mg lightly doped GaN layer. The dominance of the blue and the yellow emissions increased in the PL spectra as the Mg concentration was increased. The X-ray diffraction was employed to study the structure of the layers. Both the undoped and the doped layers exhibited hexagonal structure. The samples were annealed and significant changes were not observed in Hall Effect and in the PL measurements, so we suggest that there is no need of a thermal annealing for magnesium acceptor activation.

  3. Chemical synthesis of p-type nanocrystalline copper selenide thin films for heterojunction solar cells

    Science.gov (United States)

    Ambade, Swapnil B.; Mane, R. S.; Kale, S. S.; Sonawane, S. H.; Shaikh, Arif V.; Han, Sung-Hwan

    2006-12-01

    Nanocrystalline thin films of copper selenide have been grown on glass and tin doped-indium oxide substrates using chemical method. At ambient temperature, golden films have been synthesized and annealed at 200 °C for 1 h and were examined for their structural, surface morphological and optical properties by means of X-ray diffraction (XRD), scanning electron microscopy and UV-vis spectrophotometry techniques, respectively. Cu 2- xSe phase was confirmed by XRD pattern and spherical grains of 30 ± 4 - 40 ± 4 nm in size aggregated over about 130 ± 10 nm islands were seen by SEM images. Effect of annealing on crystallinity improvement, band edge shift and photoelectrochemical performance (under 80 mW/cm 2 light intensity and in lithium iodide electrolyte) has been studied and reported. Observed p-type electrical conductivity in copper selenide thin films make it a suitable candidate for heterojunction solar cells.

  4. A re-examination of cobalt-related defects in n- and p-type silicon

    Energy Technology Data Exchange (ETDEWEB)

    Scheffler, Leopold; Kolkovsky, Vladimir; Weber, Joerg [Technische Universitaet Dresden, 01069 Dresden (Germany)

    2012-10-15

    In the present work cobalt-doped n- and p-type silicon samples were studied by means of deep level transient spectroscopy (DLTS) and Laplace-DLTS (LDLTS). We demonstrate that two dominant DLTS peaks previously assigned to a substitutional Co defect have different annealing behaviour and therefore belong to different defects. After wet chemical etching three other peaks (E90, E140 and H160) were observed in the samples. The intensity of the peaks becomes larger in the H-plasma treated samples. This together with depth profiling demonstrates that the peaks are hydrogen-related defects. The origin of the peaks will be discussed. (Copyright copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  5. Low-temperature TCT characterization of heavily proton irradiated p-type magnetic Czochralski silicon detectors

    CERN Document Server

    Härkönen, J; Luukka, P; Kassamakov, I; Autioniemi, M; Tuominen, E; Sane, P; Pusa, P; Räisänen, J; Eremin, V; Verbitskaya, E; Li, Z

    2007-01-01

    n+/p−/p+ pad detectors processed at the Microelectronics Center of Helsinki University of Technology on boron-doped p-type high-resistivity magnetic Czochralski (MCz-Si) silicon substrates have been investigated by the transient current technique (TCT) measurements between 100 and 240 K. The detectors were irradiated by 9 MeV protons at the Accelerator Laboratory of University of Helsinki up to 1 MeV neutron equivalent fluence of 2×1015 n/cm2. In some of the detectors the thermal donors (TD) were introduced by intentional heat treatment at 430 °C. Hole trapping time constants and full depletion voltage values were extracted from the TCT data. We observed that hole trapping times in the order of 10 ns were found in heavily (above 1×1015 neq/cm2) irradiated samples. These detectors could be fully depleted below 500 V in the temperature range of 140–180 K.

  6. Ge-intercalated graphene: The origin of the p-type to n-type transition

    KAUST Repository

    Kaloni, Thaneshwor P.

    2012-09-01

    Recently huge interest has been focussed on Ge-intercalated graphene. In order to address the effect of Ge on the electronic structure, we study Ge-intercalated free-standing C 6 and C 8 bilayer graphene, bulk C 6Ge and C 8Ge, as well as Ge-intercalated graphene on a SiC(0001) substrate, by density functional theory. In the presence of SiC(0001), there are three ways to obtain n-type graphene: i) intercalation between C layers; ii) intercalation at the interface to the substrate in combination with Ge deposition on the surface; and iii) cluster intercalation. All other configurations under study result in p-type states irrespective of the Ge coverage. We explain the origin of the different doping states and establish the conditions under which a transition occurs. © Copyright EPLA, 2012.

  7. Chemical synthesis of p-type nanocrystalline copper selenide thin films for heterojunction solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Ambade, Swapnil B. [Department of Chemical Engineering, Vishwakarma Institute of Technology, Pune 411037 (India); Mane, R.S. [Inorganic Nanomaterials Laboratory, Department of Chemistry, Hanyang University, Sungdong-Ku, Haengdang-dong 17, Seoul 133-791 (Korea, Republic of); Kale, S.S. [Inorganic Nanomaterials Laboratory, Department of Chemistry, Hanyang University, Sungdong-Ku, Haengdang-dong 17, Seoul 133-791 (Korea, Republic of); Sonawane, S.H. [Department of Chemical Engineering, Vishwakarma Institute of Technology, Pune 411037 (India); Shaikh, Arif V. [Department of Electronic Science, AKI' s Poona College of Arts, Science and Commerce, Camp, Pune 411 001 (India); Han, Sung-Hwan [Inorganic Nanomaterials Laboratory, Department of Chemistry, Hanyang University, Sungdong-Ku, Haengdang-dong 17, Seoul 133-791 (Korea, Republic of)]. E-mail: shhan@hanyang.ac.kr

    2006-12-15

    Nanocrystalline thin films of copper selenide have been grown on glass and tin doped-indium oxide substrates using chemical method. At ambient temperature, golden films have been synthesized and annealed at 200 deg. C for 1 h and were examined for their structural, surface morphological and optical properties by means of X-ray diffraction (XRD), scanning electron microscopy and UV-vis spectrophotometry techniques, respectively. Cu{sub 2-x}Se phase was confirmed by XRD pattern and spherical grains of 30 {+-} 4 - 40 {+-} 4 nm in size aggregated over about 130 {+-} 10 nm islands were seen by SEM images. Effect of annealing on crystallinity improvement, band edge shift and photoelectrochemical performance (under 80 mW/cm{sup 2} light intensity and in lithium iodide electrolyte) has been studied and reported. Observed p-type electrical conductivity in copper selenide thin films make it a suitable candidate for heterojunction solar cells.

  8. Luminescence properties of p-type thin CdS films prepared by laser ablation

    Energy Technology Data Exchange (ETDEWEB)

    Ullrich, B. [Tokyo Univ. (Japan). Dept. of Physics; Ezumi, H. [Department of Electrical Engineering, Hiroshima-Denki Institute of Technology, Hiroshima 739-03 (Japan); Keitoku, S. [Hiroshima Women`s University, Hiroshima 734 (Japan); Kobayashi, T. [Tokyo Univ. (Japan). Dept. of Physics

    1995-12-01

    Investigations of the luminescence of p-type CdS:Cu thin (less than or equal to 2 {mu}m) films on glass substrate prepared by laser ablation were performed for the first time. The dependences of the luminescence on the Cu content in the thin films were studied at 300 K with argon laser lines at 457.9 nm, 488.0 nm and 514.5 nm. It is demonstrated that the luminescence excited with the 514.5 nm line corresponds to the donor-acceptor transition. Furthermore, it is shown that the intensity of the red emission of CdS:Cu films can be efficiently bleached by Cu doping. (orig.)

  9. Influences of Pr and Ta doping concentration on the characteristic features of FTO thin film deposited by spray pyrolysis

    Science.gov (United States)

    Güven, Turgut; Adem, Koçyiğit; Erdal, Sönmez

    2015-10-01

    The Pr and Ta separately doped FTO (10 at.% F incorporated SnO2) films are fabricated via spray pyrolysis. The microstructural, topographic, optical, and electrical features of fluorine-doped TO (FTO) films are investigated as functions of Pr and Ta dopant concentrations. The x-ray diffraction (XRD) measurements reveal that all deposited films show polycrystalline tin oxide crystal property. FTO film has (200) preferential orientation, but this orientation changes to (211) direction with Pr and Ta doping ratio increasing. Atomic force microscopy (AFM) and scanning electron microscopy (SEM) analyses show that all films have uniform and homogenous nanoparticle distributions. Furthermore, morphologies of the films depend on the ratio between Pr and Ta dopants. From ultraviolet-visible (UV-Vis) spectrophotometer measurements, it is shown that the transmittance value of FTO film decreases with Pr and Ta doping elements increasing. The band gap value of FTO film increases only at 1 at.% Ta doping level, it drops off with Pr and Ta doping ratio increasing at other doped FTO films. The electrical measurements indicate that the sheet resistance value of FTO film initially decreases with Pr and Ta doping ratio decreasing and then it increases with Pr and Ta doping ratio increasing. The highest value of figure of merit is obtained for 1 at.% Ta- and Pr-doped FTO film. These results suggest that Pr- and Ta-doped FTO films may be appealing candidates for TCO applications.

  10. Influences of Pr and Ta doping concentration on the characteristic features of FTO thin film deposited by spray pyrolysis

    Institute of Scientific and Technical Information of China (English)

    G ¨uven Turgut; Adem Koc¸ yi˘git; Erdal S ¨onmez

    2015-01-01

    The Pr and Ta separately doped FTO (10 at.%F incorporated SnO2) films are fabricated via spray pyrolysis. The mi-crostructural, topographic, optical, and electrical features of fl uorine-doped TO (FTO) films are investigated as functions of Pr and Ta dopant concentrations. The x-ray diffraction (XRD) measurements reveal that all deposited films show polycrys-talline tin oxide crystal property. FTO film has (200) preferential orientation, but this orientation changes to (211) direction with Pr and Ta doping ratio increasing. Atomic force microscopy (AFM) and scanning electron microscopy (SEM) anal-yses show that all films have uniform and homogenous nanoparticle distributions. Furthermore, morphologies of the films depend on the ratio between Pr and Ta dopants. From ultraviolet-visible (UV-Vis) spectrophotometer measurements, it is shown that the transmittance value of FTO film decreases with Pr and Ta doping elements increasing. The band gap value of FTO film increases only at 1 at.%Ta doping level, it drops off with Pr and Ta doping ratio increasing at other doped FTO films. The electrical measurements indicate that the sheet resistance value of FTO film initially decreases with Pr and Ta doping ratio decreasing and then it increases with Pr and Ta doping ratio increasing. The highest value of figure of merit is obtained for 1 at.%Ta-and Pr-doped FTO film. These results suggest that Pr-and Ta-doped FTO films may be appealing candidates for TCO applications.

  11. The development of p-type silicon detectors for the high radiation regions of the LHC

    CERN Document Server

    Hanlon, M D L

    1998-01-01

    This thesis describes the production and characterisation of silicon microstrip detectors and test structures on p-type substrates. An account is given of the production and full parameterisation of a p-type microstrip detector, incorporating the ATLAS-A geometry in a beam test. This detector is an AC coupled device incorporating a continuous p-stop isolation frame and polysilicon biasing and is typical of n-strip devices proposed for operation at the LHC. It was successfully read out using the FELix-128 analogue pipeline chip and a signal to noise (s/n) of 17+-1 is reported, along with a spatial resolution of 14.6+-0.2 mu m. Diode test structures were fabricated on both high resistivity float zone material and on epitaxial material and subsequently irradiated with 24 GeV protons at the CERN PS up to a dose of (8.22+-0.23) x 10 sup 1 sup 4 per cm sup 2. An account of the measurement program is presented along with results on the changes in the effective doping concentration (N sub e sub f sub f) with irradiat...

  12. Wide band gap p-type windows by CBD and SILAR methods

    Energy Technology Data Exchange (ETDEWEB)

    Sankapal, B.R.; Goncalves, E.; Ennaoui, A.; Lux-Steiner, M.Ch

    2004-03-22

    Chemical deposition methods, namely, chemical bath deposition (CBD) and successive ionic layer adsorption and reaction (SILAR) have been used to deposit wide band gap p-type CuI and CuSCN thin films at room temperature (25 deg. C) in aqueous medium. Growth of these films requires the use of Cu (I) cations as a copper ions source. This is achieved by complexing Cu (II) ions using Na{sub 2}S{sub 2}O{sub 3}. The anion sources are either KI as iodine or KSCN as thiocyanide ions for CuI and CuSCN films, respectively. The preparative parameters are optimized with the aim to use these p-type materials as windows for solar cells. Different substrates are used, namely: glass, fluorine doped tin oxide coated glass and CuInS{sub 2} (CIS). X-ray diffraction, scanning electron microscopy, atomic force microscopy and optical absorption spectroscopy are used for structural, surface morphological and optical studies, and the results are discussed.

  13. Use of hexamethyldisiloxane for p-type microcrystalline silicon oxycarbide layers

    Directory of Open Access Journals (Sweden)

    Goyal Prabal

    2016-01-01

    Full Text Available The use of hexamethyldisiloxane (HMDSO as an oxygen source for the growth of p-type silicon-based layers deposited by Plasma Enhanced Chemical Vapor Deposition is evaluated. The use of this source led to the incorporation of almost equivalent amounts of oxygen and carbon, resulting in microcrystalline silicon oxycarbide thin films. The layers were examined with characterisation techniques including Spectroscopic Ellipsometry, Dark Conductivity, Fourier Transform Infrared Spectroscopy, Secondary Ion Mass Spectrometry and Transmission Electron Microscopy to check material composition and structure. Materials studies show that the refractive indices of the layers can be tuned over the range from 2.5 to 3.85 (measured at 600 nm and in-plane dark conductivities over the range from 10-8 S/cm to 1 S/cm, suggesting that these doped layers are suitable for solar cell applications. The p-type layers were tested in single junction amorphous silicon p-i-n type solar cells.

  14. Piezo-phototronic effect on electroluminescence properties of p-type GaN thin films.

    Science.gov (United States)

    Hu, Youfan; Zhang, Yan; Lin, Long; Ding, Yong; Zhu, Guang; Wang, Zhong Lin

    2012-07-11

    We present that the electroluminescence (EL) properties of Mg-doped p-type GaN thin films can be tuned by the piezo-phototronic effect via adjusting the minority carrier injection efficiency at the metal-semiconductor (M-S) interface by strain induced polarization charges. The device is a metal-semiconductor-metal structure of indium tin oxide (ITO)-GaN-ITO. Under different straining conditions, the changing trend of the transport properties of GaN films can be divided into two types, corresponding to the different c-axis orientations of the films. An extreme value was observed for the integral EL intensity under certain applied strain due to the adjusted minority carrier injection efficiency by piezoelectric charges introduced at the M-S interface. The external quantum efficiency of the blue EL at 430 nm was changed by 5.84% under different straining conditions, which is 1 order of magnitude larger than the change of the green peak at 540 nm. The results indicate that the piezo-phototronic effect has a larger impact on the shallow acceptor states related EL process than on the one related to the deep acceptor states in p-type GaN films. This study has great significance on the practical applications of GaN in optoelectronic devices under a working environment where mechanical deformation is unavoidable such as for flexible/printable light emitting diodes.

  15. Synthesis and optical characteristics of yttrium-doped zinc oxide nanorod arrays grown by hydrothermal method.

    Science.gov (United States)

    Park, Hyunggil; Kim, Younggyu; Ji, Iksoo; Lee, Sang-Heon; Kim, Jin Soo; Kim, Jin Soo; Leem, Jae-Young

    2014-11-01

    Yttrium-doped ZnO (YZO) nanorods were synthesized by hydrothermal growth on a quartz substrate with various post-annealing temperatures. To investigate the effects of post-annealing on the optical properties and parameters of the nanorods, X-ray diffractometry (XRD), photoluminescence (PL) measurement, and ultraviolet (UV)-visible spectroscopy were used. From the XRD investigation, the full width at half maximum (FWHM) and the dislocation density of the nanorods was found to increase with an increase in the post-annealing temperature. In the PL spectra, the intensity of the near band edge (NBE) emission peak in the UV region also increases with an increase in the temperature of post-annealing. The deep level emission (DLE) peak in the visible region changes with various post-annealing temperatures, and its intensity increases remarkably with post-annealing at 800 degrees C. In this paper, changes in the optical parameters of the nanorods caused by variation in the behavior of Y during post-annealing was investigated, with properties such as absorption coefficients, refractive indices, and dispersion parameters being obtained from transmittance and reflectance analysis.

  16. The effect of Ce3+ ions on the spectral and decay characteristics of luminescence phosphate-borate glasses doped with rare-earth ions

    Science.gov (United States)

    Valiev, D. T.; Polisadova, E. F.; Belikov, K. N.; Egorova, N. L.

    2014-05-01

    The luminescent characteristics of Li2O-B2O3-P2O5-CaF2 (LBPC) glasses doped with Gd3+ and Tb3+ ions and codoped with Ce3+ are studied by pulsed optical spectrometry under electron beam excitation. It is found that in glass with Ce3+ and Gd3+ ions a decrease in the decay time of gadolinium luminescence in the 312-nm band (6 P J → 8 S 7/2) was observed. It is shown that in the glass LBPC: Tb, Ce, an increase in the emission intensity in the main radiative transitions in terbium ion was observed. In the kinetics of luminescence band 545 nm of LBPC: Tb, Ce glasses, is present stage of buildup, the character of which changes with the doped of Ce3+ ions. The mechanism of energy transfer in LBP glasses doped with rare elements is discussed.

  17. Self Q-switched characteristic based on single longitudinal DBR erbium-doped fiber laser with narrow linewidth pulse output

    Science.gov (United States)

    Lyu, Chengang; Zhang, Shuai; Zhang, Xugeng; Gao, Jiale; Jie, Jin

    2017-09-01

    The self Q-switched characteristic of the single longitudinal-mode distributed Bragg reflector (DBR) erbium-doped fiber laser (EDFL) with narrow linewidth pulse output is demonstrated without any extra saturable absorber or electro-optic and acoustic-optic modulator, and it is provided with a simpler structure and lower cost. The proposed pulse laser operates at approximately 1550.33 nm with a 20 dB bandwidth of 0.56 nm and signal-to-noise ratio of about 55 dB. By increasing the 980 nm pump power from 80-330 mW, the repetition rate of the output pulse increases from 73.53-147.1 kHz while the pulse width decreases from 1.4-0.2 µs, which shows the feature of the narrow linewidth ideally. The maximum pulse energy of 0.379 nJ and peak power of 1897.2 µW are generated with a repetition rate and pulse width of 147.1 kHz and 0.2 µs, respectively. The result shows that the self Q-switched pulse of the DBR EDFL is obviously dependent on the applied pump power and possesses the characteristic of the single longitudinal mode and the narrow linewidth, offering potential utilization in industrial processing and scientific research.

  18. Properties and local environment of p-type and photoluminescent rare earths implanted into ZnO single crystals

    CERN Document Server

    Rita, EMC; Wahl, U; Soares, JC

    This thesis presents an experimental study of the local environment of p-type and Rare- Earth dopants implanted in ZnO single-crystals (SCs). Various nuclear and bulk property techniques were combined in the following evaluations: Implantation damage annealing was evaluated in ZnO SCs implanted with Fe, Sr and Ca. P-type dopants Cu and Ag implanted ZnO SCs were studied revealing that the solubility of Cu in substituting Zn is considerably higher than that of Ag. These results are discussed within the scope of the ZnO p-type doping problematic with these elements. Experimental proofs of the As “anti-site” behavior in ZnO were for the first time attained, i.e., the majority of As atoms are substitutional at the Zn site (SZn), possibly surrounded by two Zn vacancies (VZn). This reinforces the theoretical prediction that As acts as an acceptor in ZnO via the AsZn-2VZn complex formation. The co-doping of ZnO SC with In (donor) and As (acceptor) was addressed. The most striking result is the possible In-As “p...

  19. Preparation of p-type NiO films by reactive sputtering and their application to CdTe solar cells

    Science.gov (United States)

    Ishikawa, Ryousuke; Furuya, Yasuaki; Araki, Ryouichi; Nomoto, Takahiro; Ogawa, Yohei; Hosono, Aikyo; Okamoto, Tamotsu; Tsuboi, Nozomu

    2016-02-01

    Transparent p-type NiO films were prepared by reactive sputtering using the facing-target system under Ar-diluted O2 gas at Tsub of 30 and 200 °C. The increasing intensity of dominant X-ray diffraction (XRD) peaks indicates improvements in the crystallinity of NiO films upon Cu doping. In spite of the crystallographic and optical changes after Cu-doping, the electrical properties of Cu-doped NiO films were slightly improved. Upon Ag-doping at 30 °C under low O2 concentration, on the other hand, the intensity of the dominant (111) XRD peaks was suppressed and p-type conductivity increased from ˜10-3 to ˜10-1 S cm-1. Finally, our Ag-doped NiO films were applied as the back contact of CdTe solar cells. CdTe solar cells with a glass/ITO/CdS/CdTe/NiO structure exhibited an efficiency of 6.4%, suggesting the high potential of using p-type NiO for the back-contact film in thin-film solar cells.

  20. Synthesis and Electronic Transport of Hydrothermally Synthesized p-Type Na-Doped SnSe

    Science.gov (United States)

    Yang, Zong-Ren; Chen, Wei-Hao; Liu, Chia-Jyi

    2016-11-01

    A series of polycrystalline Sn1-x Na x Se with x = 0.00, 0.02, 0.04 and 0.10 were fabricated using hydrothermal synthesis followed by evacuated-and-encapsulated sintering. The as-fabricated materials were characterized using powder x-ray diffraction and electronic transport. The resulting materials were single phase. Partial replacement of Na for Sn leads to a simultaneous increase of electrical conductivity and thermopower. The x = 0.04 sample has the largest power factor among the series of the samples. Upon partial replacement of Na for Sn, the power factor is significantly enhanced as compared to the undoped SnSe. The maximum ZT value of ˜0.4 was achieved for Sn0.96Na0.04Se at 550 K.

  1. Characterization of the Microstructure of HgCdTe with p-Type Doping

    Science.gov (United States)

    Lobre, C.; Jouneau, P.-H.; Mollard, L.; Ballet, P.

    2014-08-01

    Nitrogen, phosphorus, arsenic, and antimony ions were implanted in Hg0.3Cd0.7Te (MCT) layers under the same implantation conditions. An identical annealing process was then applied to these layers to eradicate implantation damage and to activate the impurities. Implantation damage was investigated by direct visualization, by use of bright-field scanning transmission electron microscopy (BF-STEM). Secondary-ion mass spectrometry was used to investigate impurity diffusion on annealing. The combination of these two techniques revealed the significant effect of structural implantation damage on the diffusion process. Annealed layers were then investigated by high-resolution STEM imaging and energy-dispersive x-ray spectroscopy in STEM (STEM-EDX). This approach enables direct visualization and, therefore, further description of arsenic and antimony-rich nanocrystals.

  2. Preparation of p-n Junction Diode by B-Doped Diamond Film Grown on Si-Doped c-BN

    Institute of Scientific and Technical Information of China (English)

    王成新; 高春晓; 张铁臣; 刘洪武; 李迅; 韩永吴; 骆继峰; 申彩霞

    2002-01-01

    A heterojunction diode has been fabricated by boron-doped p-type diamond thin film grown epitaxially ona silicon-doped n-type cubic boron nitride bulk crystal using the conventional hot tilament chemical vapourdeposition method. The ohmic electrode of Ti (50nm)/Mo (l00nm)/Au (300nm) for the p-type diamond filmand the bulk crystal of the c-BN were deposited by the rf planar magnetron method. Then the device wasannealed at 410°C in air for i h in order to form ohmic metal alloy. The current-voltage characteristics of theheterojunction diode were measured and the result indicated that the rectification ratio reached 10a, and theturn-on voltage and the highest current were 7 V and 0.35 mA, respectively.

  3. P-type conductivity in annealed strontium titanate

    Energy Technology Data Exchange (ETDEWEB)

    Poole, Violet M.; Corolewski, Caleb D.; McCluskey, Matthew D., E-mail: mattmcc@wsu.edu [Department of Physics and Astronomy, Washington State University, Pullman, WA 99164-2814 (United States)

    2015-12-15

    Hall-effect measurements indicate p-type conductivity in bulk, single-crystal strontium titanate (SrTiO{sub 3}, or STO) samples that were annealed at 1200°C. Room-temperature mobilities above 100 cm{sup 2}/V s were measured, an order of magnitude higher than those for electrons (5-10 cm{sup 2}/V s). Average hole densities were in the 10{sup 9}-10{sup 10} cm{sup −3} range, consistent with a deep acceptor.

  4. Characteristics and Time-Dependent Instability of Ga-Doped ZnO Thin Film Transistor Fabricated by Radio Frequency Magnetron Sputtering

    Institute of Scientific and Technical Information of China (English)

    黄海琴; 孙建; 刘凤娟; 赵建伟; 胡佐富; 李振军; 张希清; 王永生

    2011-01-01

    We report on the fabrication and electrical characteristics of Ga-doped ZnO thin film transistors(TFTs).Low Ga-doped(0.7wt%)ZnO thin films were deposited on SiO2/p-Si substrates by rf magnetron sputtering.The GZO TFTs show a mobility of 1.76cm2/V.s,an on/off ratio of 1.0 × 106,and a threshold voltage of 35 V.The time-dependent instability of the TFT is studied.The VTH shifts negatively.In addition,the device shows a decrease of the on/off ratio,mainly due to the increase of the off-current.The mechanisms of instability are discussed.%We report on the fabrication and electrical characteristics of Ga-doped ZnO thin 61m transistors (TFTs). Low Ga-doped (0.7wt%) ZnO thin Rims were deposited on SiO2/p-Si substrates by rf magnetron sputtering. The GZO TFTs show a mobility of 1.76cm2/V-s, an on/off ratio of 1.0 x 106, and a threshold voltage of 35 V. The time-dependent instability of the TFT is studied. The VTH shifts negatively. In addition, the device shows a decrease of the on/off ratio, mainly due to the increase of the off-current. The mechanisms of instability are discussed.

  5. Optical response and magnetic characteristic of samarium doped zinc phosphate glasses containing nickel nanoparticles

    Energy Technology Data Exchange (ETDEWEB)

    Azmi, Siti Amlah M.; Sahar, M.R., E-mail: mrahim057@gmail.com

    2015-11-01

    A magnetic glass of composition 40ZnO–(58−x) P{sub 2}O{sub 5}–1Sm{sub 2}O{sub 3}–xNiO, with x=0.0, 1.0, 1.5 and 2.0 mol% is prepared by melt-quenching technique. The glass is characterized by X-ray diffraction, high-resolution transmission electron microscope (HRTEM), photoluminescence (PL) spectroscopy and vibrating sample magnetometer (VSM) analysis. The X-rays diffraction confirms the amorphous nature of the glass while the HRTEM analysis reveals the presence of nickel nanoparticles in the glass samples. High-resolution TEM reveals that the lattice spacing of nickel nanoparticles is 0.35 nm at (100) plane. Photoluminescence emission shows the existence of four peaks that correspond to the transition from the upper level of {sup 4}G{sub 5/2} to the lower level of {sup 6}H{sub 5/2}, {sup 6}H{sub 7/2}, {sup 6}H{sub 9/2,} and {sup 6}H{sub 11/2.} It is observed that all peaks experience significant quenching effect with the increasing concentration of nickel nanoparticles, suggesting a strong energy transfer from excited samarium ions to the nickel ions. The glass magnetization and susceptibility at 12 kOe at room temperature are found to be in the range of (3.87±0.17×10{sup −2}–7.19±0.39×10{sup −2}) emu/g and (3.24±0.16×10{sup −6}–5.99±0.29×10{sup −6}) emu/Oe g respectively. The obtained hysteresis curve indicates that the glass samples are paramagnetic materials. The studied glass can be further used towards the development of magneto-optical functional glass. - Highlights: • Sm{sup 3+} doped zinc phosphate glass embedded with Ni NPs has been prepared. • The Laue pattern and lattice spacing of Ni NPs are confirmed by HRTEM image. • The magnetic response of glasses has been studied through VSM analysis. • Enhancement factor and decay half-lifetime are investigated.

  6. Influence of Li-doping on structural characteristics and photocatalytic activity of ZnO nano-powder formed in a novel solution pyro-hydrolysis route

    Energy Technology Data Exchange (ETDEWEB)

    Ganesh, Ibram, E-mail: ibramganesh@arci.res.in [Laboratory for Photoelectrochemical (PEC) Cells and Advanced Ceramics, International Advanced Research Centre for Powder Metallurgy and New Materials (ARCI), Balapur PO, Hyderabad 500005, A.P. (India); Sekhar, P.S. Chandra; Padmanabham, G.; Sundararajan, G. [Laboratory for Photoelectrochemical (PEC) Cells and Advanced Ceramics, International Advanced Research Centre for Powder Metallurgy and New Materials (ARCI), Balapur PO, Hyderabad 500005, A.P. (India)

    2012-10-15

    Highlights: Black-Right-Pointing-Pointer Li-doping improves the photocatalytic ability of ZnO. Black-Right-Pointing-Pointer The reactivation of the deactivated ZnO catalyst can be achieved by washing with H{sub 2}O. Black-Right-Pointing-Pointer 10 wt.% Li-doped ZnO completely decomposes 1 mM methylene blue solution in 40 min. Black-Right-Pointing-Pointer A simple solution pyro-hydrolysis technique can be employed to synthesize nano-sized ZnO powders. Black-Right-Pointing-Pointer Li and Al co-doped ZnO follows first order kinetics in methylene blue degradation reaction. - Abstract: Different types of Li-doped ZnO (LDZ) (Li = 0-10 wt.%) powders were prepared by following a novel pyro-hydrolysis route at 450 Degree-Sign C, and were thoroughly characterized by means of thermo-gravimetry (TG), differential scanning calorimetry (DSC), X-ray diffraction (XRD), scanning electron microscopy (SEM), transmission electron microscopy (TEM), Fourier-transform infrared (FT-IR), Fourier-transform Raman (FT-Raman) spectroscopy, diffuse reflectance spectroscopy (DRS), ultra-violet visible (UV-Vis) spectroscopy, Brunauer-Emmett-Teller (BET) surface area (SA), and zeta potential ({zeta}) measurements. Photocatalytic activity of these powders was evaluated by means of methylene blue (MB) degradation experiments conducted under the irradiation of simulated and natural solar light. Characterization results suggest that both pure ZnO and LDZ powders are quite thermally stable up to a temperature of 700 Degree-Sign C and possess band gap (BG) energies in the range of 3.16-3.2 eV with a direct band to band transition and {zeta} values of -31.6 mV to -56.4 mV. The properties exhibited by LDZ powders were found to be quite comparable to those exhibited by p-type semi-conducting LDZ powders. In order to study the kinetics of MB degradation reaction under the irradiation of simulated solar light, the Li (0.2-10 wt.%) and Al (0.5 wt.%) co-doped ZnO (0.2LADZ to 10LADZ) powders were also

  7. Metal Fluoride Inhibition of a P-type H+ Pump

    Science.gov (United States)

    Pedersen, Jesper Torbøl; Falhof, Janus; Ekberg, Kira; Buch-Pedersen, Morten Jeppe; Palmgren, Michael

    2015-01-01

    The plasma membrane H+-ATPase is a P-type ATPase responsible for establishing electrochemical gradients across the plasma membrane in fungi and plants. This essential proton pump exists in two activity states: an autoinhibited basal state with a low turnover rate and a low H+/ATP coupling ratio and an activated state in which ATP hydrolysis is tightly coupled to proton transport. Here we characterize metal fluorides as inhibitors of the fungal enzyme in both states. In contrast to findings for other P-type ATPases, inhibition of the plasma membrane H+-ATPase by metal fluorides was partly reversible, and the stability of the inhibition varied with the activation state. Thus, the stability of the ATPase inhibitor complex decreased significantly when the pump transitioned from the activated to the basal state, particularly when using beryllium fluoride, which mimics the bound phosphate in the E2P conformational state. Taken together, our results indicate that the phosphate bond of the phosphoenzyme intermediate of H+-ATPases is labile in the basal state, which may provide an explanation for the low H+/ATP coupling ratio of these pumps in the basal state. PMID:26134563

  8. Effects of Zn doping concentration on resistive switching characteristics in Ag/La$_{1−x}Zn$_x$MnO$_3$/p$^+$-Si devices

    Indian Academy of Sciences (India)

    SHUAISHUAI YAN; HUA WANG; JIWEN XU; LING YANG; WEI QIU; QISONG CHEN; DONG HAN

    2016-12-01

    Ag/La$_{1−x}$Zn$_x$MnO$_3$/p$^+$-Si devices with different Zn doping contents were fabricated through sol–gel method. The effects of Zn doping concentration on the microstructure of La$_{1−x}$Zn$_x$MnO$_3$ films, as well as on the resistance switching behaviour and endurance characteristics of Ag/La$_{1−x}$Zn$_x$MnO$_3$/p$^{+}$-Si were investigated. After annealing at 600$^{\\circ}$C for 1~h, the La$_{1−x}$Zn$_x$MnO$_3$ ($x = 0.1$, 0.2, 0.3, 0.4, 0.5) are amorphous and have bipolar resistance characteristics, with RHRS/RLRS ratios $>$103. However, the endurance characteristics show considerable differences; $x = 0.3$ shows the best endurance characteristics in more than 1000 switching cycles. The conduction mechanism of the Ag/La$_{1−x}$Zn$_x$MnO$_3$/p$^{+}$-Si is the Schottky emission mode at high resistance state. However, the conduction mechanism at low resistance state varies with Zn doping concentration. The dominant mechanism at $x = 0.1$ is filamentary conduction mechanism, whereas that at $x \\ge 0.2$ is space-charge-limited current conduction.

  9. P-type polymer-based Ag2S atomic switch for “tug of war” operation

    Science.gov (United States)

    Lutz, Carolin; Hasegawa, Tsuyoshi; Tsuchiya, Takashi; Adelsberger, Christoph; Hayakawa, Ryoma; Chikyow, Toyohiro

    2017-06-01

    The Ag2S gap-type atomic switch based “tug of war” device is a promising element for building a new type of CMOS free neuromorphic computer-hardware. Since Ag+ cations are reduced during operation of the device, it was thought that the gap-material should be a n-type polymer. In this study, we revealed that the polymer bithiophene-oligoethyleneoxide (BTOE) doped poly(ethylene oxide) (PEO), which was used as gap-material in the first demonstration of the “tug of war”, is a p-type polymer. For this we used impedance spectroscopy and transistor measurements. We elaborate on how the electrochemical processes in the “tug of war” devices could be explained in the case of p-type conductive gap-materials.

  10. Enhancing the photoelectrochemical water splitting characteristics of titanium and tungsten oxide based materials via doping and sensitization

    Science.gov (United States)

    Gakhar, Ruchi

    To better utilize solar energy for clean energy production, efforts are needed to overcome the natural diurnal variation and the diffuse nature of sunlight. Photoelectrochemical (PEC) hydrogen generation by water splitting is a promising approach to harvest solar energy. Hydrogen gas is a clean and high energy capacity fuel. However, the solar-to-hydrogen conversion efficiency is determined mainly by the properties of the materials employed as photoanodes. Improving the power-conversion efficiency of PEC water splitting requires the design of inexpensive and efficient photoanodes that have strong visible light absorption, fast charge separation, and lower charge recombination rate. In the present study, PEC characteristics of various semiconducting photoelectrodes such as TiO2, WO3 and CuWO4 were investigated. Due to the inherent wide gap, such metal oxides absorb only ultraviolet radiation. Since ultraviolet radiation only composes of 4% of the sun's spectrum, the wide band gap results in lower charge collection and efficiency. Thusto improve optical absorption and charge separation, it is necessary to modify the band gap with low band gap materials.The two approaches followed for modification of band gap are doping and sensitization. Here, TiO2 and WO3 based photoanodes were sensitized with ternary quatum dots, while doping was the primary method utilized to investigate the modification of the band gap of CuWO4. The first part of this dissertation reports the synthesis of ternary quantum dot - sensitized titania nanotube array photoelectrodes. Ternary quantum dots with varying band gaps and composition (MnCdSe, ZnCdSe and CdSSe) were tethered to the surface of TiO2 nanotubes using succcessive ionic layer adsorption and reaction (SILAR) technique. The stoichiometry of ternary quantum dots was estimated to beMn0.095Cd0.95Se, Zn0.16Cd0.84Se and CdS0.54Se0.46. The effect of varying number of sensitization cycles and annealing temperature on optical and

  11. Characteristics of Al-doped ZnO films grown by atomic layer deposition for silicon nanowire photovoltaic device.

    Science.gov (United States)

    Oh, Byeong-Yun; Han, Jin-Woo; Seo, Dae-Shik; Kim, Kwang-Young; Baek, Seong-Ho; Jang, Hwan Soo; Kim, Jae Hyun

    2012-07-01

    We report the structural, electrical, and optical characteristics of Al-doped ZnO (ZnO:Al) films deposited on glass by atomic layer deposition (ALD) with various Al2O3 film contents for use as transparent electrodes. Unlike films fabricated by a sputtering method, the diffraction peak position of the films deposited by ALD progressively moved to a higher angle with increasing Al2O3 film content. This indicates that Zn sites were effectively replaced by Al, due to layer-by-layer growth mechanism of ALD process which is based on alternate self-limiting surface chemical reactions. By adjusting the Al2O3 film content, a ZnO:Al film with low electrical resistivity (9.84 x 10(-4) Omega cm) was obtained at an Al2O3 film content of 3.17%, where the Al concentration, carrier mobility, optical transmittance, and bandgap energy were 2.8 wt%, 11.20 cm2 V(-1) s(-1), 94.23%, and 3.6 eV, respectively. Moreover, the estimated figure of merit value of our best sample was 8.2 m7Omega(-1). These results suggest that ZnO:Al films deposited by ALD could be useful for electronic devices in which especially require 3-dimensional conformal deposition of the transparent electrode and surface passivation.

  12. Synthesis, characteristics and thermoluminescent dosimetry features of γ-irradiated Ce doped CaF2 nanophosphor.

    Science.gov (United States)

    Zahedifar, M; Sadeghi, E; Mozdianfard, M R; Habibi, E

    2013-08-01

    Nanoparticles of cerium doped calcium fluoride (CaF2:Ce) were synthesized for the first time using the hydrothermal method. The formation of nanostructures was confirmed by X-ray diffraction (XRD) patterns, indicating cubic lattice structure for the particles produced. Their shape and size were observed by scanning electron microscopy (SEM). Thermoluminescence characteristics were studied by having the samples irradiated by gamma rays of (60)Co source. The optimum thermal treatment of 400 °C for 30 min was found for the produced nanoparticles. The Tm-Tstop and computerized glow curve deconvolution (CGCD) methods, used to determine the number of component glow peaks and kinetic parameters, indicated seven overlapping glow peaks on the TL glow curve at approximately 394, 411, 425, 445, 556, 594 and 632 K. A linear dose response of up to 2000 Gy, was observed for the prepared nanoparticles. Maximum TL sensitivity was found at 0.4 mol% of Ce impurity. Other TL dosimetry features, including reusability and fading, were also presented and discussed. Copyright © 2013 Elsevier Ltd. All rights reserved.

  13. Photocatalytic characteristics of single phase Fe-doped anatase TiO{sub 2} nanoparticles sensitized with vitamin B{sub 12}

    Energy Technology Data Exchange (ETDEWEB)

    Gharagozlou, Mehrnaz, E-mail: gharagozlou@icrc.ac.ir [Department of Nanomaterials and Nanotechnology, Institute for Color Science and Technology, Tehran (Iran, Islamic Republic of); Bayati, R. [Intel Corporation, IMO-SC, SC2, Santa Clara, CA 95054 (United States)

    2015-01-15

    Highlights: • Anatase TiO{sub 2}/B{sub 12} hybrid nanostructured catalyst was successfully synthesized by sol–gel technique. • The nanoparticle catalyst was doped with iron at several concentrations. • Nanoparticles were characterized in detail by XRD, Raman, TEM, EDS, and spectroscopy techniques. • The formation mechanism and role of point defects on photocatalytic properties were discussed. • A structure-property-processing correlation was established. - Abstract: We report a processing-structure-property correlation in B{sub 12}-anatase titania hybrid catalysts doped with several concentrations of iron. Our results clearly show that low-level iron doping alters structure, defect content, and photocatalytic characteristics of TiO{sub 2}. XRD and Raman studies revealed formation of a single-phase anatase TiO{sub 2} where no iron based segregation in particular iron oxide, was detected. FT-IR spectra clearly confirmed sensitization of TiO{sub 2} nanoparticles with vitamin B{sub 12}. TEM micrographs and diffraction patterns confirmed crystallization of anatase nanoparticles with a radius of 15–20 nm. Both XRD and Raman signals showed a peak shift and a peak broadening which are surmised to originate from creation of point defects, namely oxygen vacancy and titanium interstitial. The doped samples revealed a narrower band gap as compared to undoped samples. Photocatalytic activity of the samples was assessed through measuring the decomposition rate of rhodamine B. It was found that sensitization with vitamin B{sub 12} and Fe-doping significantly enhances the photocatalytic efficiency of the anatase nanoparticles. We also showed that there is an optimum Fe-doping level where the maximum photocatalytic activity is achieved. The boost of photocatalytic activity was qualitatively understood to originate from a more effective use of the light photons, formation of point defects, which enhance the charge separation, higher carrier mobility.

  14. Electrical properties and surface morphology of electron beam evaporated p-type silicon thin films on polyethylene terephthalate for solar cells applications

    Energy Technology Data Exchange (ETDEWEB)

    Ang, P. C.; Ibrahim, K.; Pakhuruddin, M. Z. [Nano-Optoelectronics Research and Technology Laboratory, School of Physics, Universiti Sains Malaysia, Minden 11800 Penang (Malaysia)

    2015-04-24

    One way to realize low-cost thin film silicon (Si) solar cells fabrication is by depositing the films with high-deposition rate and manufacturing-compatible electron beam (e-beam) evaporation onto inexpensive foreign substrates such as glass or plastic. Most of the ongoing research is reported on e-beam evaporation of Si films on glass substrates to make polycrystalline solar cells but works combining both e-beam evaporation and plastic substrates are still scarce in the literature. This paper studies electrical properties and surface morphology of 1 µm electron beam evaporated Al-doped p-type silicon thin films on textured polyethylene terephthalate (PET) substrate for application as an absorber layer in solar cells. In this work, Si thin films with different doping concentrations (including an undoped reference) are prepared by e-beam evaporation. Energy dispersion X-ray (EDX) showed that the Si films are uniformly doped by Al dopant atoms. With increased Al/Si ratio, doping concentration increased while both resistivity and carrier mobility of the films showed opposite relationships. Root mean square (RMS) surface roughness increased. Overall, the Al-doped Si film with Al/Si ratio of 2% (doping concentration = 1.57×10{sup 16} atoms/cm{sup 3}) has been found to provide the optimum properties of a p-type absorber layer for fabrication of thin film Si solar cells on PET substrate.

  15. Improved Resistive Switching Characteristics of Ag-Doped ZrO2 Films Fabricated by Sol-Gel Process

    Institute of Scientific and Technical Information of China (English)

    SUN Bing; LIU Li-Feng; HAN De-Dong; WANG Yi; LIU Xiao-Yan; HAN Ru-Qi; KANG Jin-Feng

    2008-01-01

    Ag-doped and pure ZrO2 thin films are prepared on Pt/Ti/SiO2/Si substrates by sol-gel process for resistive random access memory application. The highly reproducible resistive switching is achieved in the 10% Ag-doped ZrO2 devices. The improved resistive switching behaviour in the Ag doped ZrO2 devices could be attributed to Ag doping effect on the formation of the stable filamentary conducting paths. In addition, dual-step reset processes corresponding to three stable resistance states are observed in the 10% Ag doped ZrO2 devices, which may be implemented for the application of multi-bit storage.

  16. Extrinsic doping in silicon revisited

    KAUST Repository

    Schwingenschlögl, Udo

    2010-06-17

    Both n-type and p-type doping of silicon is at odds with the charge transfer predicted by Pauling electronegativities and can only be reconciled if we no longer regarding dopant species as isolated atoms but rather consider them as clusters consisting of the dopant and its four nearest neighbor silicon atoms. The process that gives rise to n-type and p-type effects is the charge redistribution that occurs between the dopant and its neighbors, as we illustrate here using electronic structure calculations. This view point is able to explain why conventional substitutional n-type doping of carbon has been so difficult.

  17. Extrinsic doping in silicon revisited

    Energy Technology Data Exchange (ETDEWEB)

    Schwingenschloegl, Udo [PSE Division, KAUST, Thuwal, Kingdom of Saudi Arabia (Saudi Arabia); Chroneos, Alexander; Grimes, Robin [Department of Materials, Imperial College London, London SW7 2BP (United Kingdom); Schuster, Cosima [Institut fuer Physik, Universitaet Augsburg, 86135 Augsburg (Germany)

    2011-07-01

    Both n-type and p-type doping of silicon is at odds with the charge transfer predicted by Pauling electronegativities and can only be reconciled if we no longer regard dopant species as isolated atoms but rather consider them as clusters consisting of the dopant and its four nearest neighbor silicon atoms. The process that gives rise to n-type and p-type effects is the charge redistribution that occurs between the dopant and its neighbors, as we illustrate here using electronic structure calculations. This view point is able to explain why conventional substitutional n-type doping of carbon has been so difficult.

  18. Sub-2y node NAND flash characteristics using spot beam technology for low energy, high tilt implant for n-poly doping

    Science.gov (United States)

    Ryu, Chong-Il; Lee, Sangsun; Jeon, Young-Ho; Cheon, Youngil; Choi, Jin-Kwan; Yang, Young-Ho; Lee, Kyung-Won; Hong, Rympyo; Yoon, Jong-Yoon; Reece, Ron; Rubin, Leonard M.

    2012-11-01

    Reduction of polysilicon sheet resistivity and polysilicon depletion ratio (PDR) are two major challenges for improving the memory cell characteristics of sub-20 nm NAND Flash devices. High phosphorus doses are implanted into in situ doped polysilicon floating gates to improve PDR, but phosphorus concentrations that are too high can degrade cell characteristics by increasing trapped charge in the TNOX(Tunnel Oxide). It is also important to prevent the bending of narrow polysilicon lines during floating gate implantation. We explored various conditions of low energy, high tilt phosphorus implants for floating gate doping using a spot beam high current implanter. The optimal concentration of implant energy, tilt angle, and thermal annealing has been shown to improve PDR and floating gate TOP CD control.

  19. Structural and optical characteristics of Ce, Nd, Gd, and Dy-doped Al2O3 thin films

    Science.gov (United States)

    Varpe, Ashwini S.; Deshpande, Mrinalini D.

    2017-07-01

    We present the optical properties of rare earth (RE)-doped Al_2O_3 thin films and discuss their possible use in applications like gate dielectric material and in coating industry. Aluminum oxide films doped with RE elements such as Ce, Nd, Gd, and Dy are synthesized on glass substrate using ultrasonic spray pyrolysis technique at 400°C. The concentration of rare earth element is varied from 0.5 to 5 mol% in 0.1 M solution of Al2O3. The X-ray diffraction analysis indicates that the thin films deposited with and without rare earth doping have an amorphous structure. Further, the optical properties of RE-doped Al2O3 thin films are studied by using UV-visible spectroscopy and photoluminescence measurement. The band gap is found to be 4.06 eV for Al2O3 thin film. A small blue shift is seen in the optical spectra of RE-doped samples as compared to undoped Al2O3 film. Dielectric constant of alumina thin film increases with doping of Gd and Dy while it decreases with Ce and Nd doping. Concentration quenching effects are observed in the photoluminescence spectra of Ce, Nd, Gd, and Dy-doped Al_2O_3 films. Among all these RE-doped Al2O3 thin films, Gd and Dy-doped Al2O3 films exhibit a potential for the construction of dielectric gate in transistors or as a coating material in the semiconductor industry.

  20. Structural and optical characteristics of Ce, Nd, Gd, and Dy-doped $\\rm{Al_{2}O_{3}}$ thin films

    Indian Academy of Sciences (India)

    ASHWINI S VARPE; MRINALINI D DESHPANDE

    2017-07-01

    We present the optical properties of rare earth (RE)-doped $\\rm{Al_{2}O_{3}}$ thin films and discuss their possible use in applications like gate dielectric material and in coating industry. Aluminum oxide films doped with RE elements such as Ce, Nd, Gd, and Dy are synthesized on glass substrate using ultrasonic spray pyrolysis technique at 400$^{\\circ}$C. The concentration of rare earth element is varied from 0.5 to 5 mol% in 0.1 M solution of $\\rm{Al_{2}O_{3}}$. The X-ray diffraction analysis indicates that the thin films deposited with and without rare earth doping have an amorphous structure. Further, the optical properties of RE-doped $\\rm{Al_{2}O_{3}}$ thin films are studied by using UV–visible spectroscopy and photoluminescence measurement. The band gap is found to be 4.06eV for $\\rm{Al_[2}O_{3}}$ thin film. A small blue shift is seen in the optical spectra of RE-doped samples as compared to undoped $\\rm{Al_[2}O_{3}}$ film. Dielectric constant of alumina thin film increases with doping of Gd and Dy while it decreases with Ce and Nd doping. Concentration quenching effects are observed in the photoluminescence spectra of Ce, Nd, Gd, and Dy-doped $\\rm{Al_[2}O_{3}}$ films. Among all these RE-doped $\\rm{Al_[2}O_{3}}$ thin films, Gd and Dy-doped $\\rm{Al_[2}O_{3}}$ films exhibit a potential for the construction of dielectric gate in transistors or as a coating material in the semiconductor industry.

  1. Residual Strain and Electronic Characteristics of Si-doped GaN

    Institute of Scientific and Technical Information of China (English)

    LI Chao; YU Zhi-wei; YU Qi; ZHOU Xun; ZOU Ze-ya; DU Jiang-feng; JI Hong; YANG Mo-hua; ZHAO Hong; ZHAO Jin-xia; ZHU Yan-ling

    2008-01-01

    The residual strain and the damage induced by Si implantation in GaN samples have been studied, as well as the electronic characteristics. These as-grown samples are implanted with different doses of Si(1×1014 cm-2, 1×1015 cm-2 or 1×1016 cm-2, 100 keV) and following annealed by rapid thermal anneal(RTA) at 1 000 ℃ or 1 100 ℃ for 60 s. High resolution X-ray diffractometer(HRXRD) measurement reveals that the damage peak induced by the implantation appears and increases with the rise of the impurity dose, expanding the crystal lattice. The absolute value of biaxial strain decreases with the increase of the annealing temperature for the same sample. RT-Hall test reveals that the sample annealed at 1 100 ℃ acquires higher mobility and higher carrier density than that annealed at 1 000 ℃, which reflects that the residual strain(or residual stress) is the main scattering factor. And the sample C3(1×1016 cm-2 and annealed at 1 100 ℃) acquires the best electronic characteristic with the carrier density of 3.25×1019 cm-3 and the carrier mobility of 31 cm2/(V·s).

  2. Synthesis, characterization and microwave characteristics of ternary nanocomposite of MWCNTs/doped Sr-hexaferrite/PANI

    Science.gov (United States)

    Seyyed Afghahi, Seyyed Salman; Peymanfar, Reza; Javanshir, Shahrzad; Atassi, Yomen; Jafarian, Mojtaba

    2017-02-01

    Substituted strontium ferrite (sub-SF) nanoparticles are prepared by a sol-gel method and added to functionalized multiwalled carbon nanotubes (MWCNTs). The ternary nanocomposite of MWCNTs/sub-SF/polyaniline (PANI) is prepared by in-situ polymerization of aniline on MWCNTs/sub-SF reaction mixture. The morphology, structure and magnetic properties of the nanocomposites are investigated by SEM, XRD, FTIR and VSM, respectively. The microwave characteristics are measured using a vector network analyzer. The XRD patterns exhibit representative diffraction peaks corresponding to hexagonal structure, and the structure of the MWCNTs is not distorted. SEM micrographs show that sub-SF nanoparticles and PANI chains are uniformly dispersed on the surface of MWCNTs. The MWCNTs/sub-SF/PANI exhibit a minimum reflection loss of -26 dB at 10 GHz with 3 GHz bandwidth and a matching thickness of 5 mm. This excellent microwave characteristic indicates the synergistic effect of the three components to enhance the impedance matching and improve the microwave absorption properties of the composite.

  3. Growth and characterization of Czochralski-grown n and p-type GaAs for space solar cell substrates

    Science.gov (United States)

    Chen, R. T.

    1983-01-01

    Progress in LEC (liquid encapsulated Czochralski) crystal growth techniques for producing high-quality, 3-inch-diameter, n- and p-type GaAs crystals suitable for solar cell applications is described. The LEC crystals with low dislocation densities and background impurities, high electrical mobilities, good dopant uniformity, and long diffusion lengths were reproducibly grown through control of the material synthesis, growth and doping conditions. The capability for producing these large-area, high-quality substrates should positively impact the manufacturability of highly efficiency, low cost, radiation-hard GaAs solar cells.

  4. The influence of substrate and annealing temperatures on electrical properties of p-type ZnO films

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, C.Y. [Department of Mathematics and Physics, Shanghai Institute of technology, 120 Cao Bao Road, Shanghai 200235 (China)], E-mail: zhang_canyun@sit.edu.cn

    2009-01-15

    In this study, p-type ZnO films with excellent electrical properties were prepared by ultrasonic spray pyrolysis (USP) combining with a N-Al codoping technique. The influence of the substrate temperature and annealing temperature on electrical properties of ZnO films was investigated. The growth and doping process of ZnO films was explored by thermogravimetry, differential scanning calorimetry and mass spectrum (TG-DSC-MS) measurements. It is suggested that the variation of electrical properties of ZnO films with the substrate temperature and annealing temperature results from the removal of H element out of the films.

  5. Two-dimensional ferromagnet/semiconductor transition metal dichalcogenide contacts: p-type Schottky barrier and spin-injection control

    KAUST Repository

    Gan, Liyong

    2013-09-26

    We study the ferromagnet/semiconductor contacts formed by transition metal dichalcogenide monolayers, focusing on semiconducting MoS2 and WS2 and ferromagnetic VS2. We investigate the degree of p-type doping and demonstrate tuning of the Schottky barrier height by vertical compressive pressure. An analytical model is presented for the barrier heights that accurately describes the numerical findings and is expected to be of general validity for all transition metal dichalcogenide metal/semiconductor contacts. Furthermore, magnetic proximity effects induce a 100% spin polarization at the Fermi level in the semiconductor where the spin splitting increases up to 0.70 eV for increasing pressure.

  6. Effect of Ag Doping on Optical and Electrical Properties of ZnO Thin Films

    Institute of Scientific and Technical Information of China (English)

    XU Jin; ZHANG Zi-Yu; ZHANG Yang; LIN Bi-Xia; FU Zhu-Xi

    2005-01-01

    @@ ZnO thin films were prepared on p-type Si (100) substrates by the sol-gel process. The influence of Ag doping at a content of 0.002 % on the photoluminescence and current-voltage (Ⅰ - Ⅴ) characteristics of ZnO thin films has been investigated. It is found that Ag doping leads to a pronounced increase in the intensity of near band edge emission at 3.23 eV and a remarkable red shift of the visible broadband at room temperature. The Ⅰ - Ⅴ characteristics of ZnO/p-Si hetero junctions are also changed. These results could be explained by Ag substituting for Zn in Ag doped ZnO thin films.

  7. Determination of active doping in highly resistive boron doped silicon nanocrystals embedded in SiO{sub 2} by capacitance voltage measurement on inverted metal oxide semiconductor structure

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, Tian, E-mail: tianz@student.unsw.edu.au; Puthen-Veettil, Binesh; Wu, Lingfeng; Jia, Xuguang; Lin, Ziyun; Yang, Terry Chien-Jen; Conibeer, Gavin; Perez-Wurfl, Ivan [Australian Centre for Advanced Photovoltaics, UNSW Australia, Kensington, New South Wales 2052 (Australia)

    2015-10-21

    We investigate the Capacitance-Voltage (CV) measurement to study the electrically active boron doping in Si nanocrystals (ncSi) embedded in SiO{sub 2}. The ncSi thin films with high resistivity (200–400 Ω cm) can be measured by using an inverted metal oxide semiconductor (MOS) structure (Al/ncSi (B)/SiO{sub 2}/Si). This device structure eliminates the complications from the effects of lateral current flow and the high sheet resistance in standard lateral MOS structures. The characteristic MOS CV curves observed are consistent with the effective p-type doping. The CV modeling method is presented and used to evaluate the electrically active doping concentration. We find that the highly boron doped ncSi films have electrically active doping of 10{sup 18}–10{sup 19 }cm{sup −3} despite their high resistivity. The saturation of doping at about 1.4 × 10{sup 19 }cm{sup −3} and the low doping efficiency less than 5% are observed and discussed. The calculated effective mobility is in the order of 10{sup −3} cm{sup 2}/V s, indicating strong impurity/defect scattering effect that hinders carriers transport.

  8. Determination of active doping in highly resistive boron doped silicon nanocrystals embedded in SiO2 by capacitance voltage measurement on inverted metal oxide semiconductor structure

    Science.gov (United States)

    Zhang, Tian; Puthen-Veettil, Binesh; Wu, Lingfeng; Jia, Xuguang; Lin, Ziyun; Yang, Terry Chien-Jen; Conibeer, Gavin; Perez-Wurfl, Ivan

    2015-10-01

    We investigate the Capacitance-Voltage (CV) measurement to study the electrically active boron doping in Si nanocrystals (ncSi) embedded in SiO2. The ncSi thin films with high resistivity (200-400 Ω cm) can be measured by using an inverted metal oxide semiconductor (MOS) structure (Al/ncSi (B)/SiO2/Si). This device structure eliminates the complications from the effects of lateral current flow and the high sheet resistance in standard lateral MOS structures. The characteristic MOS CV curves observed are consistent with the effective p-type doping. The CV modeling method is presented and used to evaluate the electrically active doping concentration. We find that the highly boron doped ncSi films have electrically active doping of 1018-1019 cm-3 despite their high resistivity. The saturation of doping at about 1.4 × 1019 cm-3 and the low doping efficiency less than 5% are observed and discussed. The calculated effective mobility is in the order of 10-3 cm2/V s, indicating strong impurity/defect scattering effect that hinders carriers transport.

  9. p-Type NiO Hybrid Visible Photodetector.

    Science.gov (United States)

    Mallows, John; Planells, Miquel; Thakare, Vishal; Bhosale, Reshma; Ogale, Satishchandra; Robertson, Neil

    2015-12-23

    A novel hybrid visible-light photodetector was created using a planar p-type inorganic NiO layer in a junction with an organic electron acceptor layer. The effect of different oxygen pressures on formation of the NiO layer by pulsed laser deposition shows that higher pressure increases the charge carrier density of the film and lowers the dark current in the device. The addition of a monolayer of small molecules containing conjugated π systems and carboxyl groups at the device interface was also investigated and with correct alignment of the energy levels improves the device performance with respect to the quantum efficiency, responsivity, and photogeneration. The thickness of the organic layer was also optimized for the device, giving a responsivity of 1.54 × 10(-2) A W(-1) in 460 nm light.

  10. Elucidating Functional Aspects of P-type ATPases

    DEFF Research Database (Denmark)

    Autzen, Henriette Elisabeth

    2015-01-01

    similar to that of the wild type (WT) protein. The discrepancy between the newly determined crystal structure of LpCopA and the functional manifestations of the missense mutation in human CopA, could indicate that LpCopA is insufficient in structurally elucidating the effect of disease-causing mutations...... cancer and pathogenic microbes. The goal of this Ph.D. dissertation was to functionally characterize SERCA1a and CopA from Legionella pneumophila (LpCopA) through a range of different methods within structural biology. Crystallographic studies of SERCA1a led to a newly determined crystal structure......P-type ATPases are proteins that act to maintain ion homeostasis and electrochemical gradients through the translocation of cations across cell membranes. Underscoring their significance in humans, dysfunction of the ATPases can lead to crucial diseases. Dysfunction of the sarco...

  11. Study on the p-type QWIP-LED device

    Institute of Scientific and Technical Information of China (English)

    ZHEN; Honglou; XIONG; Dayuan; ZHOU; Xuchang; LI; Ning; SHAO; Jun; LU; Wei

    2006-01-01

    A p-type quantum well infrared photodetector (QWIP) integrated with a light-emitting diode (LED) (named QWIP-LED) was fabricated and studied. The infrared photo-response spectrum was obtained from the device resistance variation and the near-infrared photo-emission intensity variation. A good agreement between these two spectra was observed, which demonstrates that the long-wavelength infrared radiation around 7.5 μm has been transferred to the near-infrared light at 0.8 μm by the photo-electronic process in the QWIP-LED structure. Moreover, the experimentally observed infrared response wavelength is in good agreement with the theoretical calculation value of 7.7 μm. The results on the upconversion of the infrared radiation will be very useful for the new infrared focal plane array technology.

  12. High hole mobility p-type GaN with low residual hydrogen concentration prepared by pulsed sputtering

    Science.gov (United States)

    Arakawa, Yasuaki; Ueno, Kohei; Kobayashi, Atsushi; Ohta, Jitsuo; Fujioka, Hiroshi

    2016-08-01

    We have grown Mg-doped GaN films with low residual hydrogen concentration using a low-temperature pulsed sputtering deposition (PSD) process. The growth system is inherently hydrogen-free, allowing us to obtain high-purity Mg-doped GaN films with residual hydrogen concentrations below 5 × 1016 cm-3, which is the detection limit of secondary ion mass spectroscopy. In the Mg profile, no memory effect or serious dopant diffusion was detected. The as-deposited Mg-doped GaN films showed clear p-type conductivity at room temperature (RT) without thermal activation. The GaN film doped with a low concentration of Mg (7.9 × 1017 cm-3) deposited by PSD showed hole mobilities of 34 and 62 cm2 V-1 s-1 at RT and 175 K, respectively, which are as high as those of films grown by a state-of-the-art metal-organic chemical vapor deposition apparatus. These results indicate that PSD is a powerful tool for the fabrication of GaN-based vertical power devices.

  13. Inkjet printed circuits based on ambipolar and p-type carbon nanotube thin-film transistors

    Science.gov (United States)

    Kim, Bongjun; Geier, Michael L.; Hersam, Mark C.; Dodabalapur, Ananth

    2017-02-01

    Ambipolar and p-type single-walled carbon nanotube (SWCNT) thin-film transistors (TFTs) are reliably integrated into various complementary-like circuits on the same substrate by inkjet printing. We describe the fabrication and characteristics of inverters, ring oscillators, and NAND gates based on complementary-like circuits fabricated with such TFTs as building blocks. We also show that complementary-like circuits have potential use as chemical sensors in ambient conditions since changes to the TFT characteristics of the p-channel TFTs in the circuit alter the overall operating characteristics of the circuit. The use of circuits rather than individual devices as sensors integrates sensing and signal processing functions, thereby simplifying overall system design.

  14. Inkjet printed circuits based on ambipolar and p-type carbon nanotube thin-film transistors

    Science.gov (United States)

    Kim, Bongjun; Geier, Michael L.; Hersam, Mark C.; Dodabalapur, Ananth

    2017-01-01

    Ambipolar and p-type single-walled carbon nanotube (SWCNT) thin-film transistors (TFTs) are reliably integrated into various complementary-like circuits on the same substrate by inkjet printing. We describe the fabrication and characteristics of inverters, ring oscillators, and NAND gates based on complementary-like circuits fabricated with such TFTs as building blocks. We also show that complementary-like circuits have potential use as chemical sensors in ambient conditions since changes to the TFT characteristics of the p-channel TFTs in the circuit alter the overall operating characteristics of the circuit. The use of circuits rather than individual devices as sensors integrates sensing and signal processing functions, thereby simplifying overall system design. PMID:28145438

  15. Inkjet printed circuits based on ambipolar and p-type carbon nanotube thin-film transistors.

    Science.gov (United States)

    Kim, Bongjun; Geier, Michael L; Hersam, Mark C; Dodabalapur, Ananth

    2017-02-01

    Ambipolar and p-type single-walled carbon nanotube (SWCNT) thin-film transistors (TFTs) are reliably integrated into various complementary-like circuits on the same substrate by inkjet printing. We describe the fabrication and characteristics of inverters, ring oscillators, and NAND gates based on complementary-like circuits fabricated with such TFTs as building blocks. We also show that complementary-like circuits have potential use as chemical sensors in ambient conditions since changes to the TFT characteristics of the p-channel TFTs in the circuit alter the overall operating characteristics of the circuit. The use of circuits rather than individual devices as sensors integrates sensing and signal processing functions, thereby simplifying overall system design.

  16. Recycling of p-type mc-si Top Cuts into p-type mono c-Si Solar Cells

    Energy Technology Data Exchange (ETDEWEB)

    Bronsveld, P.C.P.; Manshanden, P.; Lenzmann, F.O. [ECN Solar Energy, Westerduinweg 3, P.O. Box 1, NL-1755 ZG Petten (Netherlands); Gjerstad, O. [Si Pro Holding AS, Ornesveien 3, P.O. Box 37, 8161, Glomfjord (Norway); Oevrelid, E.J. [SINTEF, Alfred Getz Vei 2, 7465, Trondheim (Norway)

    2013-07-01

    Solar cell results and material analysis are presented of 2 p-type Czochralski (Cz) ingots pulled from a charge consisting of 100% and 50% recycled multicrystalline silicon top cuts. The top cuts were pre-cleaned with a dedicated low energy consuming technology. No structure loss was observed in the bodies of the ingots. The performance of solar cells made from the 100% recycled Si ingot decreases towards the seed end of the ingot, which could be related to a non-optimal pulling process. Solar cells from the tail end of this ingot and from the 50% recycled Si ingot demonstrated an average solar cell efficiency of 18.6%. This is only 0.1% absolute lower than the efficiency of higher resistivity reference solar cells from commercially available wafers that were co-processed.

  17. Electronic Structure of Doped Trans-Polyacetylene

    Institute of Scientific and Technical Information of China (English)

    2002-01-01

    The behavior of electronic structures of doped trans-polyacetylene is revealed by a simplemethod. (C24H26)+n is used to simulate p-type doped trans-polyacetylene at various doping concentrations.The electronic structure is calculated by CNDO/2 method. These calculations show that at low doping lev-el, the decrease of electronic energy compensates the increase of elastic energy, thus the bond alternationexists, and the charge carriers are solitons. When doping level is high, the increase of elastic energy islarger than the decrease of electronic energy, the bond alternation disappears, solitons no longer exist,and polyacetylene is in a metalic state.

  18. Increased efficiency in pn-junction PbS QD solar cells via NaHS treatment of the p-type layer

    Science.gov (United States)

    Speirs, Mark J.; Balazs, Daniel M.; Dirin, Dmitry N.; Kovalenko, Maksym V.; Loi, Maria Antonietta

    2017-03-01

    Lead sulfide quantum dot (PbS QD) solar cell efficiencies have improved rapidly over the past years due in large part to intelligent band alignment considerations. A pn-junction can be formed by connecting PbS layers with contrasting ligands. However, the resulting doping concentrations are typically low and cannot be effectively controlled. Here, we present a method of chemically p-doping films of thiol capped PbS QDs. P-n junction solar cells with increased doping in the p-type layer show improved short circuit current and fill factor, leading to an improvement in the power conversion efficiency from 7.1% to 7.6%. By examining Schottky diodes, field effect transistors, and the absorption spectra of treated and untreated PbS QDs, we show that the improved efficiency is due to the increased doping concentration in the thiol capped QD layer and to denser packing of the PbS QD film.

  19. Electrochemical characteristics of phosphorus doped Si-C composite for anode active material of lithium secondary batteries

    Institute of Scientific and Technical Information of China (English)

    Jae-Hyun NOH; Kwan-Young LEE; Joong-Kee LEE

    2009-01-01

    Phosphorus doped silicon-carbon composite particles were synthesized through a DC arc plasma torch. Silane(SiH4) and methane(CH4) were introduced into the reaction chamber as the precursor of silicon and carbon, respectively. Phosphine(PH3) was used as a phosphorus dopant gas. Characterization of synthesized particles were carried out by scanning electron microscopy(SEM), X-ray diffractometry(XRD), X-ray photoelectron spectroscopy(XPS) and bulk resistivity measurement. Electrochemical properties were investigated by cyclic test and electrochemical voltage spectroscopy(EVS). In the experimental range, phosphorus doped silicon-carbon composite electrode exhibits enhanced cycle performance than intrinsic silicon and phosphorus doped silicon. It can be explained that incorporation of carbon into silicon acts as a buffer matrix and phosphorus doping plays an important role to enhance the conductivity of the electrode, which leads to the improvement of the cycle performance of the cell.

  20. Power series fitting of current-voltage characteristics of Al doped ZnO thin film-Sb doped (Ba{sub 0.8}Sr{sub 0.2})TiO{sub 3} heterojunction diode

    Energy Technology Data Exchange (ETDEWEB)

    Sirikulrat, N., E-mail: scphi003@chiangmai.ac.th

    2012-02-29

    The current-voltage (I-V) relationship of aluminum doped zinc oxide thin film-antimony doped barium strontium titanate single heterojunction diodes was investigated. The linear I-V characteristics are similar to those of the PN junction diodes. The linear conduction at a low forward bias voltage as predicted by the space charge limited current theory and the trap free square law at a higher forward voltage are observed. The overall current density-voltage (J-V) characteristics of the diodes are found to be well described by the Power Series Equation J= N-Ary-Summation {sub m}C{sub m}V{sup m} where C{sub m} is the leakage constant at particular power m with the best fit for the power m found to be at the fourth and fifth orders for the forward and reverse bias respectively. - Highlights: Black-Right-Pointing-Pointer The n-n isotype heterojunction diodes of ceramic oxide semiconductors were prepared. Black-Right-Pointing-Pointer The current density-voltage (J-V) curves were analyzed using the Power Series (PS). Black-Right-Pointing-Pointer The J-V characteristics were found to be well described with PS at low order. Black-Right-Pointing-Pointer The thermionic emission and diode leakage currents were comparatively discussed.

  1. Analysis of Voltage Transfer Characteristics of Nano-scale SOI CMOS Inverter with Variable Channel Length and Doping Concentration

    Directory of Open Access Journals (Sweden)

    A. Daniyel Raj

    2015-03-01

    Full Text Available During many decades, continuous device performance improvement has been made possible only through device scaling. But presently, due to aggressive scaling at the sub-micron or nanometer region, the conventional planner silicon technology is suffering from the fundamental physical limits. Such imposed limits on further downscaling of silicon planner technology have lead to alternative device technology like Silicon-On-Insulator (SOI technology. Due-to some of its inherent advantages, the Silicon-On-Insulator (SOI technology has reduced the Short-channel-effects (SCEs and thus increased transistor scalability. Till now, intense research interests have been paid in practical fabrication and theoretical modeling of SOI MOSFETs but a little attention has been paid to understand the circuit level performance improvement with nano-scale SOI MOSFETs. The circuit level performance analysis of SOI MOSFET is highly essential to understand the impact of SOI technology on next level VLSI circuit and chip design and for doing so device compact models are high on demand. In such scenario, under present research, a physics based compact device model of SOI MOSFET has been developed. At the first phase of the compact model development, a physics based threshold voltage model has been developed by solving 2-D Poisson’s equation at the channel region and at the second phase, a current-voltage model has been developed with drift-diffusion analysis. Different SCEs, valid at nano-scale, are effectively incorporated in threshold voltage and Current-Voltage model. At the third phase, using the compact model, the Voltage Transfer Characteristics (VTC for a nano-scale SOI CMOS inverter has been derived with graphical analysis. The impacts of different device parameters e.g.; channel length and channel doping concentration on VTC has been investigated through simulation and the results have been analyzed.

  2. Facile synthesis of 2-D Cu doped WO3 nanoplates with structural, optical and differential anti cancer characteristics

    Science.gov (United States)

    Mehmood, Faisal; Iqbal, Javed; Gul, Asma; Ahmed, Waqqar; Ismail, M.

    2017-04-01

    Simple chemical co-precipitation method has been employed to synthesize two dimensional copper (Cu) doped tungsten oxide (WO3) nanoplates. A numbers of characterization techniques have been used to investigate their structural, optical and biocompatible anti cancer properties. The XRD results have confirmed the monoclinic crystal structure of WO3 nanoplates, and also successful doping of Cu ions into the WO3 crystal lattice. The presence of functional groups and chemical bonding have been verified through FTIR and Raman spectroscopy. The SEM images demonstrate that both undoped and Cu doped WO3 samples have squares plate like morphology. The EDX spectra confirm the presence of Cu, W and O ions. Diffuse reflectance spectroscopy (DRS) analysis has revealed a substantial red-shift in the absorption edge and a decrease in the band gap energy of nanoplates with Cu doping. Photoluminescence spectroscopy has been used to study the presence of defects like oxygen vacancies. Furthermore, the differential cytotoxic properties of Cu doped WO3 samples have been evaluated against human breast (MCF-7) and liver (Hep-2) cancer cells with ectocervical epithelial (HECE) healthy cells. The present findings confirm that the Cu doped WO3 nanoplates can be used as an efficient biocompatible anti cancer agent.

  3. (Ga,Fe)Sb: A p-type ferromagnetic semiconductor

    Energy Technology Data Exchange (ETDEWEB)

    Tu, Nguyen Thanh; Anh, Le Duc; Tanaka, Masaaki [Department of Electrical Engineering and Information Systems, The University of Tokyo, 7-3-1 Hongo, Bunkyo, Tokyo 113-8656 (Japan); Hai, Pham Nam [Department of Electrical Engineering and Information Systems, The University of Tokyo, 7-3-1 Hongo, Bunkyo, Tokyo 113-8656 (Japan); Department of Physical Electronics, Tokyo Institute of Technology, 2-12-1 Ookayama, Meguro, Tokyo 152-0033 (Japan)

    2014-09-29

    A p-type ferromagnetic semiconductor (Ga{sub 1−x},Fe{sub x})Sb (x = 3.9%–13.7%) has been grown by low-temperature molecular beam epitaxy (MBE) on GaAs(001) substrates. Reflection high energy electron diffraction patterns during the MBE growth and X-ray diffraction spectra indicate that (Ga,Fe)Sb layers have the zinc-blende crystal structure without any other crystallographic phase of precipitates. Magnetic circular dichroism (MCD) spectroscopy characterizations indicate that (Ga,Fe)Sb has the zinc-blende band structure with spin-splitting induced by s,p-d exchange interactions. The magnetic field dependence of the MCD intensity and anomalous Hall resistance of (Ga,Fe)Sb show clear hysteresis, demonstrating the presence of ferromagnetic order. The Curie temperature (T{sub C}) increases with increasing x and reaches 140 K at x = 13.7%. The crystal structure analyses, magneto-transport, and magneto-optical properties indicate that (Ga,Fe)Sb is an intrinsic ferromagnetic semiconductor.

  4. Infrared Transparent Spinel Films with p -Type Conductivity

    Energy Technology Data Exchange (ETDEWEB)

    Windisch, Charles F.; Exarhos, Gregory J.; Ferris, Kim F.; Engelhard, Mark H.; Stewart, Donald C.

    2001-11-29

    Spinel oxide films containing at least two transition metal cations were found to exhibit p-type conductivity with high optical transparency from the visible to wavelengths near 15 micrometers. Resistivities as low as 0.003 ohm-cm were measured on 100 nm thick rf sputter deposited films that contained nickel and cobalt. Optical spectra, Raman scattering and XPS measurements indicated the valency of nickel localized on octahedral sites within the spinel lattice determines these properties. Electronic band structure calculations corroborated the experimental results. A resistivity minimum was found at the composition NiCo2O4 deposited from aqueous or alcoholic solutions followed by subsequent annealing at 400 degrees C in air. Solution deposited films richer in nickel than this stoichiometry always were found to phase separate into nickel oxide and a spinel phase with concomitant loss in conductivity. However, the phase stability region could be extended to higher nickel contents when rf-sputter deposition techniques were used. Sputter deposited spinel films having a nickel to cobalt ratio less than 2 were found to exhibit the highest conductivity. Results suggest that the phase stability region for these materials can be extended through appropriate choice of deposition conditions. A possible mechanism that promotes high conductivity in this system is thought to be charge transfer between the resident di- and trivalent cations that may be assisted by the magnetic nature of the oxide film.

  5. P type porous silicon resistivity and carrier transport

    Energy Technology Data Exchange (ETDEWEB)

    Ménard, S., E-mail: samuel.menard@st.com [STMicroelectronics, 10, rue Thalès de Milet, 37071 Tours Cedex 2 (France); Fèvre, A. [STMicroelectronics, 10, rue Thalès de Milet, 37071 Tours Cedex 2 (France); Université François Rabelais de Tours, CNRS, CEA, INSA CVL, GREMAN UMR 7347, Tours (France); Billoué, J.; Gautier, G. [Université François Rabelais de Tours, CNRS, CEA, INSA CVL, GREMAN UMR 7347, Tours (France)

    2015-09-14

    The resistivity of p type porous silicon (PS) is reported on a wide range of PS physical properties. Al/PS/Si/Al structures were used and a rigorous experimental protocol was followed. The PS porosity (P{sub %}) was found to be the major contributor to the PS resistivity (ρ{sub PS}). ρ{sub PS} increases exponentially with P{sub %}. Values of ρ{sub PS} as high as 1 × 10{sup 9} Ω cm at room temperature were obtained once P{sub %} exceeds 60%. ρ{sub PS} was found to be thermally activated, in particular, when the temperature increases from 30 to 200 °C, a decrease of three decades is observed on ρ{sub PS}. Based on these results, it was also possible to deduce the carrier transport mechanisms in PS. For P{sub %} lower than 45%, the conduction occurs through band tails and deep levels in the tissue surrounding the crystallites. When P{sub %} overpasses 45%, electrons at energy levels close to the Fermi level allow a hopping conduction from crystallite to crystallite to appear. This study confirms the potential of PS as an insulating material for applications such as power electronic devices.

  6. Photoconduction spectroscopy of p-type GaSb films

    Energy Technology Data Exchange (ETDEWEB)

    Shura, M.W., E-mail: Megersa.Shura@live.nmmu.ac.za [Department of Physics, P.O. Box 77000, Nelson Mandela Metropolitan University, Port Elizabeth 6031 (South Africa); Wagener, V.; Botha, J.R.; Wagener, M.C. [Department of Physics, P.O. Box 77000, Nelson Mandela Metropolitan University, Port Elizabeth 6031 (South Africa)

    2012-05-15

    Excess carrier lifetimes (77 K) have been measured as function of the absorbed flux density in undoped p-type gallium antimonide films (GaSb/GaAs) using steady state photoconductivity measurements with the illumination wavelength of 1.1 {mu}m. Using the results from Hall effect measurements along with the relations describing the lifetimes of the excess minority carriers in the bulk of the films and at the surface, the theoretical values of the effective excess carrier lifetime in the materials were also calculated. Discrepancies between the experimental and theoretical results were described using a two-layer model, by considering the variation in the charge distribution within the layer due to the presence of surface states, as well as the band offset between the layer and the substrate. Theoretical modeling of the experimental result yields values of different parameters such as band bending at the surface, minimum value of Shockley-Read-Hall lifetime and maximum value of the surface recombination velocity.

  7. Effects of Al concentration on microstructural characteristics and electrical properties of Al-doped ZnO thin films on Si substrates by atomic layer deposition.

    Science.gov (United States)

    Lee, Ju Ho; Lee, Jae-Won; Hwang, Sooyeon; Kim, Sang Yun; Cho, Hyung Koun; Lee, Jeong Yong; Park, Jin-Seong

    2012-07-01

    Al-doped ZnO (AZO) thin films with various Al concentrations were synthesized on Si(001) substrates with native oxide layers by atomic layer deposition process. The effects of the Al concentration on the microstructural characteristics of the AZO thin films grown at 250 degrees C and the correlation between their microstructural characteristics and electrical properties of the AZO thin films were investigated by AFM, XRD, HRTEM and Hall measurements. The XRD and HRTEM results revealed that the crystallinity and electrical properties of the undoped ZnO thin films were enhanced by 2.48 at% Al doping. However, 12.62 at% Al doping induced the deterioration of their crystallinity and electrical properties due to the formation of nano-sized metallic Al clusters and randomly oriented ZnO-based nano-crystals. To enhance the electrical properties of the AZO thin films while maintaining their crystallinity and electrical properties, a moderate Al concentration has to be chosen under the solubility limit of Al in ZnO.

  8. Binary Oxide p-n Heterojunction Piezoelectric Nanogenerators with an Electrochemically Deposited High p-Type Cu2O Layer.

    Science.gov (United States)

    Baek, Seung Ki; Kwak, Sung Soo; Kim, Joo Sung; Kim, Sang Woo; Cho, Hyung Koun

    2016-08-31

    The high performance of ZnO-based piezoelectric nanogenerators (NGs) has been limited due to the potential screening from intrinsic electron carriers in ZnO. We have demonstrated a novel approach to greatly improve piezoelectric power generation by electrodepositing a high-quality p-type Cu2O layer between the piezoelectric semiconducting film and the metal electrode. The p-n heterojunction using only oxides suppresses the screening effect by forming an intrinsic depletion region, and thus sufficiently enhances the piezoelectric potential, compared to the pristine ZnO piezoelectric NG. Interestingly, a Sb-doped Cu2O layer has high mobility and low surface trap states. Thus, this doped layer is an attractive p-type material to significantly improve piezoelectric performance. Our results revealed that p-n junction NGs consisting of Au/ZnO/Cu2O/indium tin oxide with a Cu2O:Sb (cuprous oxide with a small amount of antimony) layer of sufficient thickness (3 μm) exhibit an extraordinarily high piezoelectric potential of 0.9 V and a maximum output current density of 3.1 μA/cm(2).

  9. Fabrication of p-type SnO{sub 2} films via pulsed laser deposition method by using Sb as dopant

    Energy Technology Data Exchange (ETDEWEB)

    Yu, Shihui [School of Electronic and Information Engineering, Tianjin University, Tianjin 300072 (China); Zhang, Weifeng [Key Laboratory of Photovoltaic Materials of Henan Province and School of Physics and Electronics, Henan University, Kaifeng 475004 (China); Li, Linngxia, E-mail: lingxiali@126.com [School of Electronic and Information Engineering, Tianjin University, Tianjin 300072 (China); Xu, Dan; Dong, Helei; Jin, Yuxin [School of Electronic and Information Engineering, Tianjin University, Tianjin 300072 (China)

    2013-12-01

    p-Type transparent conducting antimony-doped tin oxide (ATO) thin films were successfully fabricated on quartz glass substrates by pulsed laser deposition using a 20 at.% Sb doped SnO{sub 2} ceramic target. The growth temperature was varied from 500 to 800 °C, after deposition, the thin films were rapidly annealed at 500 °C in air for 2 h. Several analytical tools such as X-ray diffraction (XRD), Hall measurements, four-point probe, field emission scanning electron microscopy (FE-SEM), X-ray photoelectron spectroscopy (XPS) and ultraviolet–visible–near infrared (UV–Vis–NIR) spectrophotometer were used to explore the causes of the changes in optoelectronic properties and surface micrographs. The Sb-doped SnO{sub 2} film prepared at 700 °C possessed the lowest resistivity of 0.87 Ω cm with a Hall mobility of 0.65 cm{sup 2} v{sup −1} s{sup −1} and hole concentration of 1.01 × 10{sup 19} cm{sup −3}, while the average transmittance is about 85% in the visible light region (400–800 nm). Furthermore, SnO{sub 2}-based p-n homojunction was fabricated by deposition of a Sb-doped p-type SnO{sub 2} layer on a Sb-doped n-type SnO{sub 2} layer.

  10. Mg dopant distribution in an AlGaN/GaN p-type superlattice assessed using atom probe tomography, TEM and SIMS

    Energy Technology Data Exchange (ETDEWEB)

    Bennett, S E; Kappers, M J; Barnard, J S; Humphreys, C J; Oliver, R A [Department of Materials Science and Metallurgy, University of Cambridge, Pembroke St., Cambridge, CB2 3QZ (United Kingdom); Clifton, P H; Ulfig, R M, E-mail: sb534@cam.ac.u [Imago Scientific Instruments Corporation, 5500 Nobel Drive, Madison, WI, 53711 (United States)

    2010-02-01

    P-type conducting layers are critical in GaN-based devices such as LEDs and laser diodes. Such layers are often produced by doping GaN with Mg, but the hole concentration can be enhanced using AlGaN/GaN p-type superlattices by exploiting the built-in polarisation fields. A Mg-doped AlGaN/GaN superlattice was studied using SIMS. Although the AlGaN and GaN were nominally doped to the same level, the SIMS data suggested a difference in doping density between the two materials. Atom probe tomography was then used to investigate the Mg distribution. The superlattice repeats were clearly visible, as expected and, in addition, significant Mg clustering was observed in both the GaN and AlGaN layers. There were many more Mg clusters in the AlGaN layers than the GaN layers, accounting for the difference in doping density suggested by SIMS. To evaluate the structural accuracy of the atom probe reconstruction, layer thicknesses from the atom probe were compared with STEM images. Finally, future work is proposed to investigate the Mg clusters in the TEM.

  11. Piezoresistive effect in p-type 3C-SiC at high temperatures characterized using Joule heating.

    Science.gov (United States)

    Phan, Hoang-Phuong; Dinh, Toan; Kozeki, Takahiro; Qamar, Afzaal; Namazu, Takahiro; Dimitrijev, Sima; Nguyen, Nam-Trung; Dao, Dzung Viet

    2016-06-28

    Cubic silicon carbide is a promising material for Micro Electro Mechanical Systems (MEMS) applications in harsh environ-ments and bioapplications thanks to its large band gap, chemical inertness, excellent corrosion tolerance and capability of growth on a Si substrate. This paper reports the piezoresistive effect of p-type single crystalline 3C-SiC characterized at high temperatures, using an in situ measurement method. The experimental results show that the highly doped p-type 3C-SiC possesses a relatively stable gauge factor of approximately 25 to 28 at temperatures varying from 300 K to 573 K. The in situ method proposed in this study also demonstrated that, the combination of the piezoresistive and thermoresistive effects can increase the gauge factor of p-type 3C-SiC to approximately 20% at 573 K. The increase in gauge factor based on the combination of these phenomena could enhance the sensitivity of SiC based MEMS mechanical sensors.

  12. Piezoresistive effect in p-type 3C-SiC at high temperatures characterized using Joule heating

    Science.gov (United States)

    Phan, Hoang-Phuong; Dinh, Toan; Kozeki, Takahiro; Qamar, Afzaal; Namazu, Takahiro; Dimitrijev, Sima; Nguyen, Nam-Trung; Dao, Dzung Viet

    2016-06-01

    Cubic silicon carbide is a promising material for Micro Electro Mechanical Systems (MEMS) applications in harsh environ-ments and bioapplications thanks to its large band gap, chemical inertness, excellent corrosion tolerance and capability of growth on a Si substrate. This paper reports the piezoresistive effect of p-type single crystalline 3C-SiC characterized at high temperatures, using an in situ measurement method. The experimental results show that the highly doped p-type 3C-SiC possesses a relatively stable gauge factor of approximately 25 to 28 at temperatures varying from 300 K to 573 K. The in situ method proposed in this study also demonstrated that, the combination of the piezoresistive and thermoresistive effects can increase the gauge factor of p-type 3C-SiC to approximately 20% at 573 K. The increase in gauge factor based on the combination of these phenomena could enhance the sensitivity of SiC based MEMS mechanical sensors.

  13. p-Type CuYO{sub 2} as hydrogen photocathode

    Energy Technology Data Exchange (ETDEWEB)

    Trari, M.; Bouguelia, A.; Bessekhouad, Y. [Laboratoire de Stockage et de Valorisation des Energies Renouvelables, BP 32 El-Alia 16311, Algiers (Algeria)

    2006-01-23

    A new photochemical system based on a CuYO{sub 2} dispersion in aqueous S{sup 2-} or SO{sub 3}{sup 2-} solution as hole scavengers is proposed. The delafossite CuYO{sub 2}, doped with calcium, is a low p-type semiconductor with a hole mobility of 7.3x10{sup -7}m{sup 2}V{sup -1}s{sup -1}. The band gap is 3.50eV and the transition is directly allowed. The valence band edge, located at 5.23eV below vacuum, is made up from Cu-3d type typical of delafossite oxides. The flat band potential V{sub fb} (+0.17V{sub sce}) lies below the H{sub 2}O/H{sub 2} potential permitting a spontaneous H{sub 2}-formation under band gap illumination in aqueous S{sup 2-} or SO{sub 3}{sup 2-} electrolytes. p-CuYO{sub 2} loaded with n-Cu{sub 2}O exhibited a higher performance with a H{sub 2} evolution rate of 0.4cm{sup 3}h{sup -1} in 0.1MS{sup 2-} (pH 13.4). The decrease of photoactivity over time is due to the formation of yellow polysulfides S{sub n}{sup 2-} which compete with H{sub 2}O in the reduction process. (author)

  14. High-throughput search of ternary chalcogenides for p-type transparent electrodes

    Science.gov (United States)

    Shi, Jingming; Cerqueira, Tiago F. T.; Cui, Wenwen; Nogueira, Fernando; Botti, Silvana; Marques, Miguel A. L.

    2017-01-01

    Delafossite crystals are fascinating ternary oxides that have demonstrated transparent conductivity and ambipolar doping. Here we use a high-throughput approach based on density functional theory to find delafossite and related layered phases of composition ABX2, where A and B are elements of the periodic table, and X is a chalcogen (O, S, Se, and Te). From the 15 624 compounds studied in the trigonal delafossite prototype structure, 285 are within 50 meV/atom from the convex hull of stability. These compounds are further investigated using global structural prediction methods to obtain their lowest-energy crystal structure. We find 79 systems not present in the materials project database that are thermodynamically stable and crystallize in the delafossite or in closely related structures. These novel phases are then characterized by calculating their band gaps and hole effective masses. This characterization unveils a large diversity of properties, ranging from normal metals, magnetic metals, and some candidate compounds for p-type transparent electrodes. PMID:28266587

  15. High-throughput search of ternary chalcogenides for p-type transparent electrodes

    Science.gov (United States)

    Shi, Jingming; Cerqueira, Tiago F. T.; Cui, Wenwen; Nogueira, Fernando; Botti, Silvana; Marques, Miguel A. L.

    2017-03-01

    Delafossite crystals are fascinating ternary oxides that have demonstrated transparent conductivity and ambipolar doping. Here we use a high-throughput approach based on density functional theory to find delafossite and related layered phases of composition ABX2, where A and B are elements of the periodic table, and X is a chalcogen (O, S, Se, and Te). From the 15 624 compounds studied in the trigonal delafossite prototype structure, 285 are within 50 meV/atom from the convex hull of stability. These compounds are further investigated using global structural prediction methods to obtain their lowest-energy crystal structure. We find 79 systems not present in the materials project database that are thermodynamically stable and crystallize in the delafossite or in closely related structures. These novel phases are then characterized by calculating their band gaps and hole effective masses. This characterization unveils a large diversity of properties, ranging from normal metals, magnetic metals, and some candidate compounds for p-type transparent electrodes.

  16. Microwave-assisted synthesis of Fe-doped NiO nanofoams assembled by porous nanosheets for fast response and recovery gas sensors

    Science.gov (United States)

    Li, Xiu; Tan, Jian-Feng; Hu, Yan-E.; Huang, Xin-Tang

    2017-04-01

    Fe-doped NiO, a type of p-type gas sensor, has received wide attention for its low cost, environmentally friendliness and excellent gas-sensing performance. However, the operating temperature of Fe-doped NiO is too high (300 °C -500 °C). This study attempts to investigate the possibility of Fe-doped NiO working in relatively low temperature regions. A type of NiO nanofoam assembled by porous nanosheets was synthesized through a normal pressure microwave solvent thermal method by a domestic microwave oven, and Fe doping with different doping concentrations was investigated systematically. The gas-sensing performance was tested at a relatively low temperature (200 °C -280 °C). We found that the Fe-doped NiO still had a good gas-sensing performance, even at a relatively low temperature. In detail, the NiO nanofoams with 3 at% Fe-doping concentration were proven to have the best gas sensing characteristics (the response was 12-100 ppm ethanol at 280 °C), and an especially fast response and recovery (the response time and the recovery time was 1 s and 3.6 s, respectively). The study promoted the research regarding the gas sensing characteristics of Fe-doped NiO at a relatively low temperature.

  17. Growth characteristics and properties of indium oxide and indium-doped zinc oxide by atomic layer deposition

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Donghyun; Nam, Taewook; Park, Jusang [School of Electrical and Electronic Engineering, Yonsei University, 50 Yonsei-ro, Seodaemun-Gu, Seoul 120-749 (Korea, Republic of); Gatineau, Julien [Air Liquide Laboratories, 28 Wadai, Tsukuba 300-4247 (Japan); Kim, Hyungjun, E-mail: hyungjun@yonsei.ac.kr [School of Electrical and Electronic Engineering, Yonsei University, 50 Yonsei-ro, Seodaemun-Gu, Seoul 120-749 (Korea, Republic of)

    2015-07-31

    We investigated the growth of indium oxide (In{sub 2}O{sub 3}) and indium-doped zinc oxide (In-doped ZnO, IZO) thin films synthesized using thermal atomic layer deposition with dimethylamino-dimethylindium as the precursor, while varying the In{sub 2}O{sub 3}/ZnO ratio. The IZO films were deposited using the supercycle method, and the doping concentration of these films was controlled by changing the In{sub 2}O{sub 3}/ZnO cycle ratio. The microstructural properties and chemical compositions of the films were analyzed using X-ray diffraction analysis and X-ray photoelectron spectroscopy. Further, the electrical properties of the IZO films, including their carrier concentration, mobility, and resistivity, were investigated through Hall measurements. The lowest resistivity (6.15 × 10{sup −2} Ω·cm) was exhibited by the IZO film. The highest carrier concentration and mobility exhibited by the IZO films grown at 300 °C were 4.4 × 10{sup 18} cm{sup −3} and 28.7 cm{sup 2}/V·s, respectively. - Highlights: • Indium oxide and In-doped ZnO (IZO) were deposited using thermal ALD with DMLDMIn. • In doped ZnO (IZO) was deposited using thermal ALD using supercycle method. • Properties of IZO were investigated as a function of doping concentration. • The lowest resistivity can be obtained at the maximum In solubility of ZnO.

  18. Very low surface recombination velocity on p-type c-Si by high-rate plasma-deposited aluminum oxide

    Science.gov (United States)

    Saint-Cast, Pierre; Kania, Daniel; Hofmann, Marc; Benick, Jan; Rentsch, Jochen; Preu, Ralf

    2009-10-01

    Aluminum oxide layers can provide excellent passivation for lowly and highly doped p-type silicon surfaces. Fixed negative charges induce an accumulation layer at the p-type silicon interface, resulting in very effective field-effect passivation. This paper presents highly negatively charged (Qox=-2.1×1012 cm-2) aluminum oxide layers produced using an inline plasma-enhanced chemical vapor deposition system, leading to very low effective recombination velocities (˜10 cm s-1) on low-resistivity p-type substrates. A minimum static deposition rate (100 nm min-1) at least one order of magnitude higher than atomic layer deposition was achieved on a large carrier surfaces (˜1 m2) without significantly reducing the resultant passivation quality.

  19. Synthesis and Characteristic Study on Complexes of Europium(Ⅲ) and Maleic Acid Doped with Non-Fluorescent Ions

    Institute of Scientific and Technical Information of China (English)

    2007-01-01

    Complex of europium (Ⅲ) with maleic acid, and binuclear complexes of europium(Ⅲ)with maleic acid doped with non-fluorescent ions gadolinium, lanthanum and yttrium, were synthesized. The compositions and structures of complexes were characterized with elemental analysis, single crystal X-ray diffraction, IR and DSC-TG. Fluorescent properties were studied with fluorescence spectrum. The results indicated that the strongest fluorescent complexes were obtained when the ratio of europium and non-fluorescent ion was 8: 2. The order of Eu3+ fluorescence strengthened by three doped rare earths was Gd3+>La3+>Y3+.

  20. The use of doping spikes in GaN Gunn diodes

    Science.gov (United States)

    Macpherson, R. F.; Dunn, G. M.

    2008-08-01

    The possibility of circumventing the difficulties of fine doping control in GaN Gunn diode devices by the substitution of a fully depleted p-type doping spike for the doping notch used to promote domain formation is explored using a Monte Carlo model. The p-type doping spike is a commonly used structure, but its potential use in GaN has not been previously evaluated. The results for a functional doping spike are compared, favorably, to those for a physically reasonable doping notch.

  1. Boron doping a semiconductor particle

    Science.gov (United States)

    Stevens, Gary Don; Reynolds, Jeffrey Scott; Brown, Louanne Kay

    1998-06-09

    A method (10,30) of boron doping a semiconductor particle using boric acid to obtain a p-type doped particle. Either silicon spheres or silicon powder is mixed with a diluted solution of boric acid having a predetermined concentration. The spheres are dried (16), with the boron film then being driven (18) into the sphere. A melt procedure mixes the driven boron uniformly throughout the sphere. In the case of silicon powder, the powder is metered out (38) into piles and melted/fused (40) with an optical furnace. Both processes obtain a p-type doped silicon sphere with desired resistivity. Boric acid is not a restricted chemical, is inexpensive, and does not pose any special shipping, handling, or disposal requirements.

  2. Influence of Be doping on the characteristics of CdO/p-Si heterojunction for optoresponse applications

    Indian Academy of Sciences (India)

    A A Dakhel

    2014-10-01

    In this work, the optoelectronic properties of Be-doped CdO films grown on p-Si forming CdO : Be/p-Si hetero-p–n junctions were investigated. The spotlight was on the influence of electronic properties of CdO : Be layers, which were controlled by Be-dopant content, on the optoelectronic properties of the constructed p–n heterojunction. The characterization of the transparent conducting oxide CdO : Be layer was performed with X-ray diffraction, scanning electron microscopy, electrical measurements and spectral photometry. It was found that Be doping greatly enhanced the optoresponse (*) of the p–n heterojunction, such that * was boosted by ∼36 times for CdO : 0.10% Be/p-Si sample, compared with the undoped CdO/p-Si. This *-enhancement was explained by the improvement of carrier mobility in host CdO with Be doping. Therefore, the utmost * that was found with 0.10% Be-doped CdO sample was due to its highest carrier mobility among other samples of different Be content. The results of optoelectronic measurements in visible and NIR spectral range demonstrate the utility of the CdO : Be/p-Si heterojunction in photodetection applications.

  3. Characteristics of Sn-Doped Ge2Sb2Te5 Films Used for Phase-Change Memory

    Institute of Scientific and Technical Information of China (English)

    XU Cheng; LIU Bo; SONG Zhi-Tang; FENG Song-Lin; CHEN Bomy

    2005-01-01

    @@ Sn-doped Ge2Sb2 Te5 thin films deposited on Si(100)/SiO2 substrates by rf magnetron sputtering are investigatedby a differential scanning calorimeter, x-ray diffraction and sheet resistance measurement. The crystallizationtemperatures of the 3.58 at. %, 6.92 at. % and 10.04 at. % Sn-doped Ge2Sb2 Te5 thin films have decreases of 5.3,6.1 and 0.9 ℃, respectively, which is beneficial to reduce the switching current for the amorphous-to-crystallinephase transition. Due to Sn-doping, the sheet resistance of crystalline Ge2Sb2 Te5 thin films increases about 2-10times, which may be useful to reduce the switching current for the amorphous-to-crystalline phase change. Inaddition, an obvious decreasing dispersibility for the sheet resistance of Sn-doped Ge2Sb2 Te5 thin films in thecrystalline state has been observed, which can play an important role in minimizing resistance difference for thephase-change memory cell element arrays.

  4. Development of N- and P- Types of Semiconducting Polymers

    Science.gov (United States)

    2015-03-05

    NMR spectra (Figure S1- S11) and elemental analyses (Table S2). Both the solution and thin - film optical absorption spectra of the polymers are...solution and b) in pristine polymer films . 1.3 Current-Voltage (J-V) characteristics of the polymer solar cells The photovoltaic properties were...from PTR5 to PTR9. The electronic band gaps of these polymers were measured with cyclic voltammetry (CV), using thin films coated on a glass carbon

  5. Recent progress in the doping of MBE HgCdTe

    Science.gov (United States)

    Sivananthan, Sivalingam; Wijewarnasuriya, P. S.; Faurie, Jean-Pierre

    1995-09-01

    We present a review of the recent progress in the doping of HgCdTe grown by molecular beam epitaxy. A detailed analysis of the unintentional/intrinsic, n-type, and p-type doping is presented. Our results show that CdZnTe substrates should be carefully screened to reduce the out-diffusion of impurities from the substrate. N-type HgCdTe layers exhibit excellent Hall characteristics down to indium levels of 2 X 10(superscript 15) cm(superscript -3). Electron mobilities in the range of (2 - 3) X 10(superscript 5) cm(superscript 2)/vs at 23 K were obtained. Measured lifetime data fits very well with the intrinsic band-to-band recombination. However, below 2 X 10(superscript 15) cm(superscript -3) doping levels, minority carrier lifetime is limited by Schockley-Reed recombination. We have implemented planar doping with arsenic as p-type dopant during MBE growth. Our results clearly indicate that arsenic incorporates as an acceptor dopant during the growth of MBE HgCdTe.

  6. Effect of compensation doping on the electrical and optical properties of mid-infrared type-Ⅱ InAs/GaSb superlattice photodetectors

    Institute of Scientific and Technical Information of China (English)

    Wang Yong-Bin; Xu Yun; Zhang Yu; Yu Xiu; Song Guo-Feng; Chen Liang-Hui

    2011-01-01

    This paper presents a theoretical study on the electrical and optical properties of mid-infrared type-Ⅱ InAs/GaSb superlattices with different beryllium concentrations in the InAs layer of the active region. Dark current, resistancearea product, absorption coefficient and quantum efficiency characteristics are thoroughly examined. The superlattice is residually n-type and it becomes slightly p-type by varying beryllium-doping concentrations, which improves its electrical performances. The optical performances remain almost unaffected with relatively low p-doping levels and begin to deteriorate with increasing p-doping density. To make a compromise between the electrical and optical performances,the photodetector with a doping concentration of 3 × 1015 cm-3 in the active region is believed to have the best overall performances.

  7. Nanoscale Cross-Point Resistive Switching Memory Comprising p-Type SnO Bilayers

    KAUST Repository

    Hota, Mrinal Kanti

    2015-02-23

    Reproducible low-voltage bipolar resistive switching is reported in bilayer structures of p-type SnO films. Specifically, a bilayer homojunction comprising SnOx (oxygen-rich) and SnOy (oxygen-deficient) in nanoscale cross-point (300 × 300 nm2) architecture with self-compliance effect is demonstrated. By using two layers of SnO film, a good memory performance is obtained as compared to the individual oxide films. The memory devices show resistance ratio of 103 between the high resistance and low resistance states, and this difference can be maintained for up to 180 cycles. The devices also show good retention characteristics, where no significant degradation is observed for more than 103 s. Different charge transport mechanisms are found in both resistance states, depending on the applied voltage range and its polarity. The resistive switching is shown to originate from the oxygen ion migration and subsequent formation/rupture of conducting filaments.

  8. DLTS of p-type Czochralski Si wafers containing processing-induced macropores

    Science.gov (United States)

    Simoen, E.; Depauw, V.; Gordon, I.; Poortmans, J.

    2012-01-01

    The deep levels present in p-type Czochralski silicon with processing-induced macropores in the depletion region have been studied by the deep-level transient (DLT) spectroscopy technique. It is shown that a broad band is present for a bias pulse close to the interface with the Al Schottky contact, which exhibits anomalously slow hole capture and is ascribed to the internal interface states of the macropores. For depths beyond the pore region, other deep levels, associated with point defects—possibly metal contamination during the high-temperature annealing step under H2 ambient--have been observed. The impact of the observed defects on the lifetime of thin-film solar cells, fabricated using macropore-based layer transfer is discussed. Finally, it is shown that the presence of pores in the depletion region, which also affects the DLT-spectrum, alters the capacitance-voltage characteristics.

  9. Electrical parameters of metal doped n-CdO/p-Si heterojunction diodes

    Energy Technology Data Exchange (ETDEWEB)

    Umadevi, P. [Department of Physics, Sri Vidya College of Engineering & Technology, Virudhunagar 626005, Tamilnadu (India); Prithivikumaran, N., E-mail: janavi_p@yahoo.com [Nanoscience Research Lab, Department of Physics, VHNSN College, Virudhunagar 626001, Tamilnadu (India)

    2016-11-15

    The CdO, Al doped CdO and Cu doped CdO thin films were coated on p-type silicon substrates by sol–gel spin coating method. The structural, surface morphological and electrical properties of undoped, Al and Cu doped CdO films on silicon substrate were studied. The Ag/CdO/p-Si, Ag/Al: CdO/p-Si and Ag/Cu: CdO/p-Si heterojunction diodes were fabricated and the diode parameters such as reverse saturation current, barrier height and ideality factor of the diodes were investigated by current–voltage (I–V)characteristics. The reverse current of the diode was found to increase strongly with the doping. The values of barrier height and ideality factor were decreased by doping with aluminium and copper. Photo response of the heterojunction diodes was studied and it was found that, the heterojunction diode constructed with the doped CdO has larger Photo response than the undoped heterojunction diode.

  10. Electrical parameters of metal doped n-CdO/p-Si heterojunction diodes

    Science.gov (United States)

    Umadevi, P.; Prithivikumaran, N.

    2016-11-01

    The CdO, Al doped CdO and Cu doped CdO thin films were coated on p-type silicon substrates by sol-gel spin coating method. The structural, surface morphological and electrical properties of undoped, Al and Cu doped CdO films on silicon substrate were studied. The Ag/CdO/p-Si, Ag/Al: CdO/p-Si and Ag/Cu: CdO/p-Si heterojunction diodes were fabricated and the diode parameters such as reverse saturation current, barrier height and ideality factor of the diodes were investigated by current-voltage (I-V)characteristics. The reverse current of the diode was found to increase strongly with the doping. The values of barrier height and ideality factor were decreased by doping with aluminium and copper. Photo response of the heterojunction diodes was studied and it was found that, the heterojunction diode constructed with the doped CdO has larger Photo response than the undoped heterojunction diode.

  11. Large area growth and electrical properties of p-type WSe2 atomic layers.

    Science.gov (United States)

    Zhou, Hailong; Wang, Chen; Shaw, Jonathan C; Cheng, Rui; Chen, Yu; Huang, Xiaoqing; Liu, Yuan; Weiss, Nathan O; Lin, Zhaoyang; Huang, Yu; Duan, Xiangfeng

    2015-01-14

    Transition metal dichacogenides represent a unique class of two-dimensional layered materials that can be exfoliated into single or few atomic layers. Tungsten diselenide (WSe(2)) is one typical example with p-type semiconductor characteristics. Bulk WSe(2) has an indirect band gap (∼ 1.2 eV), which transits into a direct band gap (∼ 1.65 eV) in monolayers. Monolayer WSe(2), therefore, is of considerable interest as a new electronic material for functional electronics and optoelectronics. However, the controllable synthesis of large-area WSe(2) atomic layers remains a challenge. The studies on WSe(2) are largely limited by relatively small lateral size of exfoliated flakes and poor yield, which has significantly restricted the large-scale applications of the WSe(2) atomic layers. Here, we report a systematic study of chemical vapor deposition approach for large area growth of atomically thin WSe(2) film with the lateral dimensions up to ∼ 1 cm(2). Microphotoluminescence mapping indicates distinct layer dependent efficiency. The monolayer area exhibits much stronger light emission than bilayer or multilayers, consistent with the expected transition to direct band gap in the monolayer limit. The transmission electron microscopy studies demonstrate excellent crystalline quality of the atomically thin WSe(2). Electrical transport studies further show that the p-type WSe(2) field-effect transistors exhibit excellent electronic characteristics with effective hole carrier mobility up to 100 cm(2) V(-1) s(-1) for monolayer and up to 350 cm(2) V(-1) s(-1) for few-layer materials at room temperature, comparable or well above that of previously reported mobility values for the synthetic WSe(2) and comparable to the best exfoliated materials.

  12. Resistive Switching Characteristics of 10-nm-Thick Amorphous HoScO x Films Doped with Nb and Zn

    Science.gov (United States)

    Wang, Sea-Fue; Hsu, Chia-Chun; Chu, Jinn P.; Liu, Yi-Xin; Chen, Liang-Wei

    2017-03-01

    In this study, 10-nm rare-earth metal-oxide (REMO) films, namely, pure HoScO x (HSO) and HoScO x doped with Nb (HSO-Nb) and Zn (HSO-Zn), were deposited to build resistive random access memory (RRAM) devices with a Pt/REMO/Pt structure using radio frequency magnetron sputtering. The results of x-ray diffraction and transmission electron microscopy showed that all as-deposited REMO films are featureless microstructures lacking long-range order. In all RRAM devices, layer structures were well adhered to each other with relatively smooth interfaces and no cracks or holes were observed. Hall measurements demonstrated n-type conduction in the as-deposited films. The addition of Nb and Zn increased carrier concentration and mobility of the HSO films and reduced electrical resistivity. The former was possibly caused by the electronic compensation of NbSc ··, thereby triggering the formation of polarons, and the latter was probably due to the increase in concentration of oxygen vacancies associated with acceptor doping. The RRAM devices revealed unipolar switching behavior characterized by a resistance ratio of more than three orders of magnitude, good endurance, and a long retention time. The switching behavior of the RRAM with amorphous HSO films was altered by the doping species. Doping with Nb and Zn decreased the forming voltage, facilitated the use of a smaller switching voltage, and increased the resistance ratio of high- and low-resistance states. The conduction mechanisms for the low resistive state and high resistive state were dominated by Ohmic conduction and trap-controlled space-charge-limited current mechanisms, respectively.

  13. Optical and electrical characteristics of Al-doped ZnO thin films prepared by aqueous phase deposition

    Energy Technology Data Exchange (ETDEWEB)

    Yao, Pin-Chuan, E-mail: pcyao@mail.dyu.edu.tw [Department of Materials Science and Engineering, Da-Yeh University, 168 University Rd., Dacun, Changhua 51591, Taiwan (China); Hang, Shih-Tse; Lin, Yu-Shuan [Department of Materials Science and Engineering, Da-Yeh University, 168 University Rd., Dacun, Changhua 51591, Taiwan (China); Yen, Wen-Tsai; Lin, Yi-Cheng [Department of Mechatronics Engineering, National Changhua University of Education, Changhua 50007, Taiwan (China)

    2010-12-15

    Transparent conducting Al-doped ZnO (AZO) thin films have been deposited by sol-gel route. Starting from an aqueous solution of zinc acetate by adding aluminum chloride as dopant, a c-axis oriented polycrystalline ZnO thin film 100 nm in thickness could be spin-coated on glass substrates via a two-step annealing process under reducing atmosphere. The effects of thermal annealing and dopant concentration on the structural, electrical and optical properties of AZO thin films were investigated. The post-treated AZO films exhibited a homogenous dense microstructure with grain sizes less than 10 nm as characterized by SEM photographs. The annealing atmosphere has prominent impact on the crystallinity of the films which will in turn influence the electrical conductivity. By varying the doping concentrations, the optical and electrical properties could be further adjusted. An optimal doping concentration of Al/Zn = 2.25 at.% was obtained with minimum resistivity of 9.90 x 10{sup -3} {Omega}-cm whereas the carrier concentration and mobility was 1.25 x 10{sup 20} cm{sup -3} and 5.04 cm{sup 2} V{sup -1} s{sup -1}, respectively. In this case, the optical transmittance in the visible region is over 90%.

  14. Study of Optical and Structural Characteristics of Ceria Nanoparticles Doped with Negative and Positive Association Lanthanide Elements

    Directory of Open Access Journals (Sweden)

    N. Shehata

    2014-01-01

    Full Text Available This paper studies the effect of adding lanthanides with negative association energy, such as holmium and erbium, to ceria nanoparticles doped with positive association energy lanthanides, such as neodymium and samarium. That is what we called mixed doped ceria nanoparticles (MDC NPs. In MDC NPs of grain size range around 6 nm, it is proved qualitatively that the conversion rate from Ce4+ to Ce3+ is reduced, compared to ceria doped only with positive association energy lanthanides. There are many pieces of evidence which confirm the obtained conclusion. These indications are an increase in the allowed direct band gap which is calculated from the absorbance dispersion measurements, a decrease in the emitted fluorescence intensity, and an increase in the size of nanoparticles, which is measured using both techniques: transmission electron microscope (TEM and X-ray diffractometer (XRD. That gives a novel conclusion that there are some trivalent dopants, such as holmium and erbium, which can suppress Ce3+ ionization states in ceria and consequently act as scavengers for active O-vacancies in MDC. This promising concept can develop applications which depend on the defects in ceria such as biomedicine, electronic devices, and gas sensors.

  15. Design and analysis of nanowire p-type MOSFET coaxially having silicon core and germanium peripheral channel

    Science.gov (United States)

    Yu, Eunseon; Cho, Seongjae

    2016-11-01

    In this work, a nanowire p-type metal-oxide-semiconductor field-effect transistor (PMOSFET) coaxially having a Si core and a Ge peripheral channel is designed and characterized by device simulations. Owing to the high hole mobility of Ge, the device can be utilized for high-speed CMOS integrated circuits, with the effective confinement of mobile holes in Ge by the large valence band offset between Si and Ge. Source/drain doping concentrations and the ratio between the Si core and Ge channel thicknesses are determined. On the basis of the design results, the channel length is aggressively scaled down by evaluating the primary DC parameters in order to confirm device scalability and low-power applicability in sub-10-nm technology nodes.

  16. Improving the radiation hardness properties of silicon detectors using oxygenated n-type and p-type silicon

    CERN Document Server

    Casse, G L; Hanlon, M

    2000-01-01

    The degradation of the electrical properties of silicon detectors exposed to 24 GeV/c protons were studied using pad diodes made from different silicon materials. Standard high-grade p-type and n-type substrates and oxygenated n-type substrates have been used. The diodes were studied in terms of reverse current (I/sub r/) and full depletion voltage (V/sub fd/) as a function of fluence. The oxygenated devices from different suppliers with a variety of starting materials and techniques, all show a consistent improvement of the degradation rate of V/sub fd/ and CCE compared to un- oxygenated substrate devices. Radiation damage of n-type detectors introduces stable defects acting as effective p-type doping and leads to the change of the conductivity type of the silicon bulk (type inversion) at a neutron equivalent fluence of a few 10/sup 13/ cm/sup -2/. The diode junction after inversion migrates from the original side to the back plane of the detector. The migration of the junction is avoided using silicon detec...

  17. Perovskite LaRhO{sub 3} as a p-type active layer in oxide photovoltaics

    Energy Technology Data Exchange (ETDEWEB)

    Nakamura, Masao, E-mail: masao.nakamura@riken.jp; Krockenberger, Yoshiharu [RIKEN Center for Emergent Matter Science (CEMS), Wako 351-0198 (Japan); Fujioka, Jun [Department of Applied Physics and Quantum-Phase Electronics Center (QPEC), University of Tokyo, Tokyo 113-8656 (Japan); Kawasaki, Masashi; Tokura, Yoshinori [RIKEN Center for Emergent Matter Science (CEMS), Wako 351-0198 (Japan); Department of Applied Physics and Quantum-Phase Electronics Center (QPEC), University of Tokyo, Tokyo 113-8656 (Japan)

    2015-02-16

    Perovskite-type transition-metal oxides have a wide variety of physical properties and triggered intensive research on functional devices in the form of heteroepitaxial junctions. However, there is a missing component that is a p-type conventional band semiconductor. LaRhO{sub 3} (LRO) is one of very few promising candidates having its bandgap between filled t{sub 2g} and empty e{sub g} of Rh in low-spin state, but there has been no report on the synthesis of large-size single crystals or thin films. Here, we report on the junction properties of single-crystalline thin films of LRO grown on (110) oriented Nb-doped SrTiO{sub 3} substrates. The external quantum efficiency of the photo-electron conversion exceeds 1% in the visible-light region due to the wide depletion layer and long diffusion length of minority carriers in LRO. Clear indication of p-type band semiconducting character in a perovskite oxide of LRO will pave a way to explore oxide electronics of perovskite heterostructures.

  18. Novel p-Type Conductive Semiconductor Nanocrystalline Film as the Back Electrode for High-Performance Thin Film Solar Cells.

    Science.gov (United States)

    Zhang, Ming-Jian; Lin, Qinxian; Yang, Xiaoyang; Mei, Zongwei; Liang, Jun; Lin, Yuan; Pan, Feng

    2016-02-10

    Thin film solar cells, due to the low cost, high efficiency, long-term stability, and consumer applications, have been widely applied for harvesting green energy. All of these thin film solar cells generally adopt various metal thin films as the back electrode, like Mo, Au, Ni, Ag, Al, graphite, and so forth. When they contact with p-type layer, it always produces a Schottky contact with a high contact potential barrier, which greatly affects the cell performance. In this work, we report for the first time to find an appropriate p-type conductive semiconductor film, digenite Cu9S5 nanocrystalline film, as the back electrode for CdTe solar cells as the model device. Its low sheet resistance (16.6 Ω/sq) could compare to that of the commercial TCO films (6-30 Ω/sq), like FTO, ITO, and AZO. Different from the traditonal metal back electrode, it produces a successive gradient-doping region by the controllable Cu diffusion, which greatly reduces the contact potential barrier. Remarkably, it achieved a comparable power conversion efficiency (PCE, 11.3%) with the traditional metal back electrode (Cu/Au thin films, 11.4%) in CdTe cells and a higher PCE (13.8%) with the help of the Au assistant film. We believe it could also act as the back electrode for other thin film solar cells (α-Si, CuInS2, CIGSe, CZTS, etc.), for their performance improvement.

  19. Interfacial characteristics and multiferroic properties of ion-doped BiFeO3/NiFe2O4 thin films

    Science.gov (United States)

    Guo, Meiyou; Tan, Guoqiang; Zheng, Yujuan; Liu, Wenlong; Ren, Huijun; Xia, Ao

    2017-05-01

    Multi-ion doped BiFeO3/NiFe2O4 bilayered thin films were successfully prepared on fluorine-doped SnO2/glass (SnO2:F) substrates by sol-gel method. The crystalline structure, leakage current, interfacial characteristics, and multiferroic properties were investigated in detail. The results of Rietveld refinement showed that the structure of BSrSFMC layer is transformed from rhombohedral to tetragonal structure by the means of ion-doping. The difference of leakage current density of the BSrSFMC/NiFe2O4 (NFO) bilayered films of the -40 V to 40 V and 40 V to -40 V are 0.32 × 10-5 and 1.13 × 10-5 A/cm2, respectively. It was observed that there are obvious interface effects between BSrSFMC and NFO layers, which will cause the accumulation of space charges and the establishment of built-in internal electric field (EI) at the interface. Therefore, different EI directions will affect the dipoles reversal and migration of carriers in the BSrSFMC layer, which will result in different values of transient current with the same applied voltage in the opposite directions. The larger coercive field (Ec ˜ 750 kV/cm) of BSrSFMC/NFO film indicated that there is a tensile stress at the interface between BSrSFMC and NFO layers, making the polarization difficult. These results showed that the above interesting phenomena of the J-V are closely related to the interface effects between the layer of BiFeO3 and NiFe2O4.

  20. Characteristic properties of Raman scattering and photoluminescence on ZnO crystals doped through phosphorous-ion implantation

    Energy Technology Data Exchange (ETDEWEB)

    Jeong, T. S.; Yu, J. H.; Mo, H. S.; Kim, T. S.; Lim, K. Y.; Youn, C. J., E-mail: cjyoun@chonbuk.ac.kr [School of Semiconductor and Chemical Engineering, Semiconductor Physics Research Center (SPRC), Chonbuk National University, Jeonju 561-756 (Korea, Republic of); Hong, K. J. [Department of Physics, Chosun University, Gwangju 501-759 (Korea, Republic of)

    2014-02-07

    P-doped ZnO was fabricated by means of the ion-implantation method. At the Raman measurement, the blue shift of the E{sub 2}{sup high} mode and A{sub 1}(LO) phonon of the inactive mode were observed after the P-ion implantation. It suggested to be caused by the compressive stress. Thus, Hall effect measurement indicates that the acceptor levels exists in P-doped ZnO while still maintaining n-type ZnO. From the X-ray photoelectron spectroscopy, the chemical bond formation of the P2p{sub 3/2} spectrum consisted of 2(P{sub 2}O{sub 5}) molecules. Therefore, the implanted P ions were substituted to the Zn site in ZnO. From the photoluminescence (PL) spectra, P-related PL peaks were observed in the energy ranges of 3.1 and 3.5 eV, and its origin was analyzed at P{sub Zn}-2V{sub Zn} complexes, acting as a shallow acceptor. With increasing temperatures, the neutral-acceptor bound-exciton emission, (A{sup 0}, X), shows a tendency to quench the intensity and extend the emission linewidth. From the relations of the intensity and the linewidth as a function of temperature, the broadening of linewidth was believed to the result that the vibration mode of E{sub 2}{sup high} participates in the broadening process of (A{sup 0}, X) and the change of luminescent intensity was attributed to the partial dissociation of (A{sup 0}, X). Consequently, these facts indicate that the acceptor levels existed in P-doped ZnO layer by the ion implantation.

  1. Fundamental emission characteristics of light-emitting liquid crystal cells with rubrene-doped 4-cyano-4'-pentylbiphenyl

    Science.gov (United States)

    Honma, Michinori; Horiuchi, Takao; Tanimoto, Masashi; Nose, Toshiaki

    2014-06-01

    We have investigated the light emission properties in rubrene-doped nematic liquid crystal (LC) cells from the following three standpoints: (i) effect of the heating temperature during the sample preparation, (ii) role of the emissive LC layer thickness, and (iii) role of different LC types used as the emissive layer. As a result, the light-emitting LC cells simultaneously exhibit the features of electrochemiluminescent cells (the carrier transport is governed by an ionic conduction) as well as of organic light-emitting diodes (the luminance strongly depends on the emissive layer thickness). Furthermore, we report that devices with cyano group containing LCs exhibit higher luminance compared to a fluorinated LC.

  2. Control over the performance characteristics of a passively mode-locked erbium-doped fibre ring laser

    Energy Technology Data Exchange (ETDEWEB)

    Chernysheva, M A; Krylov, A A; Dianov, E M [Fiber Optics Research Center, Russian Academy of Sciences, Moscow (Russian Federation); Ogleznev, A A [Perm Research and Production Instrument Company, Perm (Russian Federation); Arutyunyan, N R; Pozharov, A S; Obraztsova, E D [A M Prokhorov General Physics Institute, Russian Academy of Sciences, Moscow (Russian Federation)

    2013-08-31

    We report an all-fibre ultrashort pulse erbium-doped ring laser passively mode-locked by single-wall carbon nanotubes dispersed in carboxymethylcellulose-based polymer films. Owing to intracavity dispersion management and controlled absorption in the polymer films, the laser is capable of generating both femto- and picosecond pulses of various shapes in the spectral range 1.53 – 1.56 μm. We have demonstrated and investigated the generation of almost transform- limited, inversely modified solitons at a high normal cavity dispersion. (control of laser radiation parameters)

  3. Experimental studies of high order soliton compression effect and gain characteristics in femtosecond laser pulses Er3+-doped fiber amplifier

    Institute of Scientific and Technical Information of China (English)

    刘东峰; 陈国夫; 白晋涛; 王贤华

    2000-01-01

    Seed laser pulses with average power of 146 pW and pulse duration of 480 fs were amplified to 14.5 mW. The pulse duration was compressed to 260 fs using 6 m high concentration Er3+ -doped fiber under forward pumping. The amplified signal pulse energy was 0.691 nJ (corresponding to a peak power of 2 657.7 W) and the repetition rate was 20.84 MHz. Spectrum breakup was observed simultaneously. The spectrum of pulses amplified by 3 m Er3+ -doped fiber remains a single peak under different pump power. The amplified pulse duration was compressed abnormally with the increasing pump power using the backward pumping; that is, the amplified pulses were compressed with the increasing pump power under low pump power. When the pump power reached 38 mW, the shortest amplified pulse duration was 309 fs. With further increase in pump power, the amplified pulses began broadening, accompanied by a single peak spectrum under different pump power.

  4. Interface modification effect between p-type a-SiC:H and ZnO:Al in p-i-n amorphous silicon solar cells.

    Science.gov (United States)

    Baek, Seungsin; Lee, Jeong Chul; Lee, Youn-Jung; Iftiquar, Sk Md; Kim, Youngkuk; Park, Jinjoo; Yi, Junsin

    2012-01-18

    Aluminum-doped zinc oxide (ZnO:Al) [AZO] is a good candidate to be used as a transparent conducting oxide [TCO]. For solar cells having a hydrogenated amorphous silicon carbide [a-SiC:H] or hydrogenated amorphous silicon [a-Si:H] window layer, the use of the AZO as TCO results in a deterioration of fill factor [FF], so fluorine-doped tin oxide (Sn02:F) [FTO] is usually preferred as a TCO. In this study, interface engineering is carried out at the AZO and p-type a-SiC:H interface to obtain a better solar cell performance without loss in the FF. The abrupt potential barrier at the interface of AZO and p-type a-SiC:H is made gradual by inserting a buffer layer. A few-nanometer-thick nanocrystalline silicon buffer layer between the AZO and a-SiC:H enhances the FF from 67% to 73% and the efficiency from 7.30% to 8.18%. Further improvements in the solar cell performance are expected through optimization of cell structures and doping levels.

  5. Resistive switching characteristics of a compact ZnO nanorod array grown directly on an Al-doped ZnO substrate

    Science.gov (United States)

    Yoo, E. J.; Shin, J. Y.; Yoon, T. S.; Kang, C. J.; Choi, Y. J.

    2016-07-01

    ZnO’s resistive switching properties have drawn much attention because ZnO has a simple chemical composition and is easy to manipulate. The propulsion mechanism for resistive switching in ZnO is based on a conducting filament that consists of oxygen vacancies. In the case of film structure, the random formation of the conducting filaments occasionally leads to unstable switching characteristics. Limiting the direction in which the conducting filaments are formed is one way to solve this problem. In this study, we demonstrate reliable resistive switching behavior in a device with an Au/compact ZnO nanorod array/Al-doped ZnO structure with stable resistive switching over 105 cycles and a long retention time of 104 s by confining conducting filaments along the boundaries between ZnO nanorods. The restrictive formation of conducting filaments along the boundaries between ZnO nanorods is observed directly using conductive atomic force microscopy.

  6. Experimental Studies on Doped and Co-Doped ZnO Thin Films Prepared by RF Diode Sputtering

    OpenAIRE

    2009-01-01

    Our research on the growing and characterizing of p-type ZnO thin films, prepared by radio frequency (RF) diode sputtering, mono-doped with nitrogen, and co-doped with aluminium and nitrogen, is a response of the need from p-type ZnO thin films for device applications. The dopants determine the conductivity type of the film and its physical properties. We obtained p-type ZnO thin films by RF diode sputtering and using a nitrogen dopant source. The novelty in our approach is in the use of a pl...

  7. Structural characteristics of surface-functionalized nitrogen-doped diamond-like carbon films and effective adjustment to cell attachment

    Science.gov (United States)

    Liu, Ai-Ping; Liu, Min; Yu, Jian-Can; Qian, Guo-Dong; Tang, Wei-Hua

    2015-05-01

    Nitrogen-doped diamond-like carbon (DLC:N) films prepared by the filtered cathodic vacuum arc technology are functionalized with various chemical molecules including dopamine (DA), 3-Aminobenzeneboronic acid (APBA), and adenosine triphosphate (ATP), and the impacts of surface functionalities on the surface morphologies, compositions, microstructures, and cell compatibility of the DLC:N films are systematically investigated. We demonstrate that the surface groups of DLC:N have a significant effect on the surface and structural properties of the film. The activity of PC12 cells depends on the particular type of surface functional groups of DLC:N films regardless of surface roughness and wettability. Our research offers a novel way for designing functionalized carbon films as tailorable substrates for biosensors and biomedical engineering applications. Project supported by the National Natural Science Foundation of China (Grant Nos. 51272237, 51272231, and 51010002) and the China Postdoctoral Science Foundation (Grant Nos. 2012M520063, 2013T60587, and Bsh1201016).

  8. Effects of NIR annealing on the characteristics of al-doped ZnO thin films prepared by RF sputtering.

    Science.gov (United States)

    Jun, Min-Chul; Koh, Jung-Hyuk

    2012-06-06

    Aluminum-doped zinc oxide (AZO) thin films have been deposited on glass substrates by employing radio frequency (RF) sputtering method for transparent conducting oxide applications. For the RF sputtering process, a ZnO:Al2O3 (2 wt.%) target was employed. In this paper, the effects of near infrared ray (NIR) annealing technique on the structural, optical, and electrical properties of the AZO thin films have been researched. Experimental results showed that NIR annealing affected the microstructure, electrical resistance, and optical transmittance of the AZO thin films. X-ray diffraction analysis revealed that all films have a hexagonal wurtzite crystal structure with the preferentially c-axis oriented normal to the substrate surface. Optical transmittance spectra of the AZO thin films exhibited transmittance higher than about 80% within the visible wavelength region, and the optical direct bandgap (Eg) of the AZO films was increased with increasing the NIR energy efficiency.

  9. Composition and morphological characteristics of chemically sprayed fluorine-doped zinc oxide thin films deposited on Si(1 0 0)

    Energy Technology Data Exchange (ETDEWEB)

    Castaneda, L. [Centro de Ciencias Aplicadas y Desarrollo Tecnologico, Universidad Nacional Autonoma de Mexico, Apartado Postal 70-186, 04510 D. F. (Mexico); Departamento de Fisica y Matematicas, Division de Ciencia, Arte y Tecnologia, Universidad Iberoamericana, Av. Prolongacion Paseo de la Reforma 880, Santa Fe 012100, D. F. (Mexico); Maldonado, A. [Depto. de Ing. Electrica, CINVESTAV IPN, SEES, Apartado Postal 14740, Mexico, D.F. 07000 (Mexico); Cheang-Wong, J.C. [Instituto de Fisica, Universidad Nacional Autonoma de Mexico, Apartado Postal 20-364, Mexico, D.F. 01000 (Mexico); Terrones, M. [Advanced Materials Department, IPICYT, Camino a la Presa San Jose 2055, Col. Lomas, 4a. seccion, San Luis Potosi, 78216 (Mexico); Departamento de Fisica y Matematicas, Division de Ciencia, Arte y Tecnologia, Universidad Iberoamericana, Av. Prolongacion Paseo de la Reforma 880, Santa Fe 012100, D. F. (Mexico); Olvera, M. de la L [Depto. de Ing. Electrica, CINVESTAV IPN, SEES, Apartado Postal 14740, Mexico, D.F. 07000 (Mexico)]. E-mail: molvera@cinvestav.mx

    2007-03-01

    Fluorine-doped zinc oxide thin films (ZnO:F) were deposited on Si(1 0 0) substrates by the chemical spray technique (CST) from an aged-solution. The effect of the substrate temperature on the morphology and composition of the ZnO:F thin films was studied. The films were polycrystalline, with a preferential growth along the ZnO (0 0 2) plane, irrespective of the deposition temperature. The average crystal size within the films was ca. 35 nm and the morphology of the surface was found to be dependent on the substrate temperature. At low substrate temperatures irregular-shaped grains were observed, whereas at higher temperatures uniform flat grains were obtained. Elemental analysis showed that the composition of the films is close to stoichiometric ZnO and that samples contain quite a low fluorine concentration, which decreases as a function of the deposition temperature.

  10. Hybrid p-type ZnO film and n-type ZnO nanorod p-n homo-junction for efficient photovoltaic applications

    Energy Technology Data Exchange (ETDEWEB)

    Lee, Jong Hyun; Lee, Jun Seok; Lee, Sang Hyo; Nam, Hye Won [Novel Functional Materials and Device Lab, Department of Physics, Hanyang University, Seoul 133-791 (Korea, Republic of); Hong, Jin Pyo, E-mail: jphong@hanyang.ac.k [Novel Functional Materials and Device Lab, Department of Physics, Hanyang University, Seoul 133-791 (Korea, Republic of); Cha, Seoung Nam; Park, Young Jun; Kim, Jong Min [Samsung Advanced Institute of Technology, P.O. Box 11, 1 Suwon 440-600 (Korea, Republic of)

    2010-09-01

    Simple hybrid p-n homo-junctions using p-type ZnO thin films and n-type nanorods grown on fluorine tin oxide (FTO) substrates for photovoltaic applications are described. The ZnO nanorods (1.5 {mu}m) were synthesized via an aqueous solution method with zinc nitrate hexahydrate and hexamethylenetetramine on ZnO seed layers. The 10-nm-thick ZnO seed layers showed n-type conductivity on FTO substrates and were deposited with a sputtering-based method. After synthesizing ZnO nanorods, aluminum-nitride co-doped p-type ZnO films (200 nm) were efficiently grown using pre-activated nitrogen (N) plasma sources with an inductively-coupled dual-target co-sputtering system. The structural and electrical properties of hybrid p-n homo-junctions were investigated by scanning electron microscopy, transmittance spectrophotometry, and I-V measurements.

  11. A novel mechanism of P-type ATPase autoinhibition involving both termini of the protein

    DEFF Research Database (Denmark)

    Ekberg, Kira; Palmgren, Michael; Veierskov, Bjarke;

    2010-01-01

    The activity of many P-type ATPases is found to be regulated by interacting proteins or autoinhibitory elements located in N- or C-terminal extensions. An extended C terminus of fungal and plant P-type plasma membrane H+-ATPases has long been recognized to be part of a regulatory apparatus...

  12. Demethoxycurcumin is a potent inhibitor of P-type ATPases from diverse kingdoms of life

    DEFF Research Database (Denmark)

    Dao, Trong Tuan; Sehgal, Pankaj; Thanh Tung, Truong;

    2016-01-01

    P-type ATPases catalyze the active transport of cations and phospholipids across biological membranes. Members of this large family are involved in a range of fundamental cellular processes. To date, a substantial number of P-type ATPase inhibitors have been characterized, some of which are used ...

  13. The effect of Gd doping on the electrical and photoelectrical properties of Gd:ZnO/p-Si heterojunctions

    Energy Technology Data Exchange (ETDEWEB)

    Baturay, Silan [Department of Physics, Faculty of Science, Dicle University, 21280 Diyarbakir (Turkey); Ocak, Yusuf Selim, E-mail: yusufselim@gmail.com [Department of Science, Faculty of Education, Dicle University, 21280 Diyarbakir (Turkey); Science and Technology Application and Research Center, Dicle University, 21280 Diyarbakir (Turkey); Kaya, Derya [Department of Physics, Institute of Natural Applied Sciences, Dicle University, 21280 Diyarbakir (Turkey)

    2015-10-05

    Highlights: • Undoped and Gd doped ZnO thin films were deposited onto p-Si semiconductor. • The Gd:ZnO/p-Si heterojunctions were compared with undoped ZnO/p-Si heterojunction. • A strong effect of Gd doping on the performance of the devices were reported. - Abstract: Undoped ZnO thin films, as well as 1%, 3% and 5% Gd-doped ZnO films, were deposited on p-type Si using spin coating. The structural properties of these thin films were analysed using X-ray diffraction, and the current–voltage (I–V) and capacitance–voltage (C–V) characteristics of the Gd:ZnO/p-Si heterojunctions were compared with those of the undoped ZnO/p-Si heterojunctions. We found that Gd doping had a strong effect on the performance of the devices, and that the Gd:ZnO/p-Si heterojunctions formed with 1% Gd-doped ZnO were the most strongly rectifying, and had the highest barrier height and the lowest series resistance. Furthermore, the I–V measurements of the 1% Gd-doped ZnO/p-Si heterojunction exhibited the strongest response to light.

  14. Growth behavior and electrical performance of Ga-doped ZnO nanorod/p-Si heterojunction diodes prepared using a hydrothermal method.

    Science.gov (United States)

    Park, Geun Chul; Hwang, Soo Min; Lim, Jun Hyung; Joo, Jinho

    2014-01-01

    The incorporation of foreign elements into ZnO nanostructures is of significant interest for tuning the structure and optical and electrical properties in nanoscale optoelectronic devices. In this study, Ga-doped 1-D ZnO nanorods were synthesized using a hydrothermal route, in which the doping content of Ga was varied from 0% to 10%. The pn heterojunction diodes based on the n-type Ga-doped ZnO nanorod/p-type Si substrates were constructed, and the effect of the Ga doping on the morphology, chemical bonding structure, and optical properties of the ZnO nanorods was systematically investigated as well as the diode performance. With increasing Ga content, the average diameter of the ZnO nanorods was increased, whereas the amount of oxygen vacancies was reduced. In addition, the Ga-doped ZnO nanorod/p-Si diodes showed a well-defined rectifying behavior in the I-V characteristics and an improvement in the electrical conductivity (diode performance) by the Ga doping, which was attributed to the increased charge carrier (electron) concentration and the reduced defect states in the nanorods by incorporating Ga. The results suggest that Ga doping is an effective way to tailor the morphology, optical, electronic, and electrical properties of ZnO nanorods for various applications such as field-effect transistors (FETs), light-emitting diodes (LEDs), and laser diodes (LDs).

  15. Light and current induced degradation in p-type multi-crystalline cells and development of an inspection method and a stabilization method

    Energy Technology Data Exchange (ETDEWEB)

    Broek, K.M.; Bennett, I.J.; Jansen, M.J.; Borg, Van der N.J.C.M.; Eerenstein, W. [ECN Solar Energy, Petten (Netherlands)

    2012-09-15

    Stable solar cells are needed for durability testing of different combinations of module materials. In such a test, significant power losses in full-size modules with multi-crystalline cells after thermal cycling have been observed. This has been related to degradation of the solar cells used and it appeared that this was caused by current induced degradation. This phenomenon is not limited to boron doped Cz-Si, but can also occur in p-type multi-crystalline silicon. Work was done to develop an incoming inspection method for new batches of cells. Also, stabilisation procedures for modules containing cells that are sensitive to degradation have been determined.

  16. Flexible Solar Cells Using Doped Crystalline Si Film Prepared by Self-Biased Sputtering Solid Doping Source in SiCl4/H2 Microwave Plasma.

    Science.gov (United States)

    Hsieh, Ping-Yen; Lee, Chi-Young; Tai, Nyan-Hwa

    2016-02-01

    We developed an innovative approach of self-biased sputtering solid doping source process to synthesize doped crystalline Si film on flexible polyimide (PI) substrate via microwave-plasma-enhanced chemical vapor deposition (MWPECVD) using SiCl4/H2 mixture. In this process, P dopants or B dopants were introduced by sputtering the solid doping target through charged-ion bombardment in situ during high-density microwave plasma deposition. A strong correlation between the number of solid doping targets and the characteristics of doped Si films was investigated in detail. The results show that both P- and B-doped crystalline Si films possessed a dense columnar structure, and the crystallinity of these structures decreased with increasing the number of solid doping targets. The films also exhibited a high growth rate (>4.0 nm/s). Under optimal conditions, the maximum conductivity and corresponding carrier concentration were, respectively, 9.48 S/cm and 1.2 × 10(20) cm(-3) for P-doped Si film and 7.83 S/cm and 1.5 × 10(20) cm(-3) for B-doped Si film. Such high values indicate that the incorporation of dopant with high doping efficiency (around 40%) into the Si films was achieved regardless of solid doping sources used. Furthermore, a flexible crystalline Si film solar cell with substrate configuration was fabricated by using the structure of PI/Mo film/n-type Si film/i-type Si film/p-type Si film/ITO film/Al grid film. The best solar cell performance was obtained with an open-circuit voltage of 0.54 V, short-circuit current density of 19.18 mA/cm(2), fill factor of 0.65, and high energy conversion of 6.75%. According to the results of bending tests, the critical radius of curvature (RC) was 12.4 mm, and the loss of efficiency was less than 1% after the cyclic bending test for 100 cycles at RC, indicating superior flexibility and bending durability. These results represent important steps toward a low-cost approach to high-performance flexible crystalline Si film

  17. Orientation Effects in Ballistic High-Strained P-type Si Nanowire FETs

    Directory of Open Access Journals (Sweden)

    Hong Yu

    2009-04-01

    Full Text Available In order to design and optimize high-sensitivity silicon nanowire-field-effect transistor (SiNW FET pressure sensors, this paper investigates the effects of channel orientations and the uniaxial stress on the ballistic hole transport properties of a strongly quantized SiNW FET placed near the high stress regions of the pressure sensors. A discrete stress-dependent six-band k.p method is used for subband structure calculation, coupled to a two-dimensional Poisson solver for electrostatics. A semi-classical ballistic FET model is then used to evaluate the ballistic current-voltage characteristics of SiNW FETs with and without strain. Our results presented here indicate that [110] is the optimum orientation for the p-type SiNW FETs and sensors. For the ultra-scaled 2.2 nm square SiNW, due to the limit of strong quantum confinement, the effect of the uniaxial stress on the magnitude of ballistic drive current is too small to be considered, except for the [100] orientation. However, for larger 5 nm square SiNW transistors with various transport orientations, the uniaxial tensile stress obviously alters the ballistic performance, while the uniaxial compressive stress slightly changes the ballistic hole current. Furthermore, the competition of injection velocity and carrier density related to the effective hole masses is found to play a critical role in determining the performance of the nanotransistors.

  18. Growth and characterization of Arsenic doped CdTe single crystals grown by Cd-solvent traveling-heater method

    Science.gov (United States)

    Nagaoka, Akira; Han, Kyu-Bum; Misra, Sudhajit; Wilenski, Thomas; Sparks, Taylor D.; Scarpulla, Michael A.

    2017-06-01

    We report the growth of p-type As-doped, Cd-rich CdTe single crystals using metallic Cd as the solvent in the traveling-heater method. We investigate the growth process from Cd solution in terms of the solid-liquid interface shape and the effects of As incorporation on p-type doping. The resulting CdTe crystals have Cd-rich composition which enhances p-type doping. The As doping efficacy was measured for As concentrations by the combination of inductively coupled plasma mass spectrometry, capacitance-voltage measurements. The p-type doping concentration varied from 6 × 1015 to 8 × 1016 cm-3 with increasing As concentration, with an apparent doping limit just below 1017 cm-3.

  19. Back-gated Nb-doped MoS2 junctionless field-effect-transistors

    Directory of Open Access Journals (Sweden)

    Gioele Mirabelli

    2016-02-01

    Full Text Available Electrical measurements were carried out to measure the performance and evaluate the characteristics of MoS2 flakes doped with Niobium (Nb. The flakes were obtained by mechanical exfoliation and transferred onto 85 nm thick SiO2 oxide and a highly doped Si handle wafer. Ti/Au (5/45 nm deposited on top of the flake allowed the realization of a back-gate structure, which was analyzed structurally through Scanning Electron Microscopy (SEM and Transmission Electron Microscopy (TEM. To best of our knowledge this is the first cross-sectional TEM study of exfoliated Nb-doped MoS2 flakes. In fact to date TEM of transition-metal-dichalcogenide flakes is extremely rare in the literature, considering the recent body of work. The devices were then electrically characterized by temperature dependent Ids versus Vds and Ids versus Vbg curves. The temperature dependency of the device shows a semiconductor behavior and, the doping effect by Nb atoms introduces acceptors in the structure, with a p-type concentration 4.3 × 1019 cm−3 measured by Hall effect. The p-type doping is confirmed by all the electrical measurements, making the structure a junctionless transistor. In addition, other parameters regarding the contact resistance between the top metal and MoS2 are extracted thanks to a simple Transfer Length Method (TLM structure, showing a promising contact resistivity of 1.05 × 10−7 Ω/cm2 and a sheet resistance of 2.36 × 102 Ω/sq.

  20. the Characteristic Phase Transitions of Co-doped BaFe2 As2 Synthesized via Flux Growth

    Science.gov (United States)

    Shea, C. H.; Roncaioli, C.; Eckberg, C.; Drye, T.; Sulliavan, M. C.; Paglione, J.

    2015-03-01

    Since the discovery of a new family of type II superconductors in 2008, the iron pnictides, researches have had suspicions that they might bear similar electronic properties to the well-known (but not easily understood) oxide superconductors. For this reason studies on this family of compounds has been of great interest to the materials science community. Our efforts have been aimed at single crystal growth and measurement of a particular member of this family, BaFe2As2. While this material is not superconducting at standard pressure, the partial substitution of cobalt on the iron site has been shown to suppresses an anti-ferromagnetic phase transition occurring at lower temperatures allowing for the appearance of a superconducting phase. Transport and low field magnetization measurements taken on our samples show clean transitions, indicating Tc's of up to 24 K in optimally doped samples. We will discuss the growth methods and temperature dependent phase transitions of this material at different cobalt concentrations. This work was supported by NSF Grant DMR-1305637.

  1. Structural, optical and electronic characteristics of N-doped graphene nanosheets synthesized using urea as reducing agent and nitrogen precursor

    Science.gov (United States)

    Chamoli, Pankaj; Das, Malay K.; Kar, Kamal K.

    2017-01-01

    In the present study, nitrogen (N)-doped graphene nanosheets (NGns) have been synthesized by solvothermal method using urea both as the green precursor of N and as the reducing agent for graphene oxide (GO). As synthesized NGns have been characterized by x-ray diffraction (XRD), Raman spectroscopy, Fourier transform infrared spectroscopy (FTIR), UV–visible spectroscopy, field emission scanning electron microscopy (FESEM) and x-ray photon spectroscopy (XPS). The Raman D to G band intensity ratio (I D /I G ), being a measure of defects in the honeycomb lattice, is used as an indicator for the formation of NGns. For GO:urea weight ratio of 1:5, high C to O atomic ratio (C/O) of ~8.75 with an N-content as high as ~8.3 at.% and high I D /I G ratio of 1.55 have been observed, which confirm the removal of oxygen functionalities from GO to form NGns. Further, transparent conducting films (TCFs) of the synthesized NGns have been fabricated by spray coating. Thermal graphitization of the TCFs has been performed to enhance their optical and electrical properties. When annealed at 900 °C for 1 h in vacuum, the film shows a best performance in terms of sheet resistance and transmittance values of ~1.63 kΩ □‑1 and ~68.21%, respectively.

  2. Investigation of morphological and electrical characteristics of tin doped indium oxide layers produced by a quasi single source precursor system

    Energy Technology Data Exchange (ETDEWEB)

    Veith, M., E-mail: Michael.veith@inm-gmbh.de [INM - Leibniz Institute for New Materials, Campus D2 2, 66123 Saarbruecken (Germany); Saarland University, Inorganic Chemistry, Campus C4 1, 66123 Saarbruecken (Germany); Bubel, C.; Grobelsek, I. [INM - Leibniz Institute for New Materials, Campus D2 2, 66123 Saarbruecken (Germany)

    2012-12-01

    Sol-gel coatings of tin doped indium oxide (ITO) were prepared via spin-coating, using a quasi single source precursor system that enhances homogeneous distribution of the dopant tin inside the oxide lattice. In addition, the implementation of metastable, bivalent tin into the gel layer enables the application of a one-step heat treatment under inert atmosphere, eliminating the need for the usually required critical post reduction treatment after crystallisation. The ITO layers produced were uniformly polycrystalline with a homogeneous thickness of 60 nm. They showed increased electrical conductivity and optical performance in terms of transmission (vis) and IR reflection. The texture was less pronounced and the tensile residual stress determined in the layers was lower than in similar films, manufactured in a conventional two-step annealing process. - Highlights: Black-Right-Pointing-Pointer A quasi single source precursor system enables one-step heat treatment of layers. Black-Right-Pointing-Pointer Thereby less pronounced texture and lower tensile residual stress were obtained. Black-Right-Pointing-Pointer The layers show hardly any fluctuations in the thickness. Black-Right-Pointing-Pointer The electrical conductivity could be increased. Black-Right-Pointing-Pointer Optical performance in terms of transmission (vis) and IR reflection was increased.

  3. Defect Chemistry Study of Nitrogen Doped ZnO Thin Films

    Energy Technology Data Exchange (ETDEWEB)

    Miami University: Dr. Lei L. Kerr (PI, PD) Wright State University: Dr. David C. Look (PI) and Dr. Zhaoqiang Fang (Co-PI)

    2009-11-29

    Our team has investigated the defect chemistry of ZnO:N and developed a thermal evaporation (vapor-phase) method to synthesis p-type ZnO:N. Enhanced p-type conductivity of nitrogen doped ZnO via nano/micro structured rods and Zn-rich Co-doping process were studied. Also, an extended X-Ray absorption fine structure study of p-type nitrogen doped ZnO was conducted. Also reported are Hall-effect, photoluminescence, and DLTS studies.

  4. Doping effect of In{sub 2}O{sub 3} on structural and ethanol-sensing characteristics of ZnO nanotubes fabricated by electrospinning

    Energy Technology Data Exchange (ETDEWEB)

    Huang, Baoyu; Zhao, Changhui; Zhang, Mingxiang; Zhang, Zemin; Xie, Erqing, E-mail: xieeq@lzu.edu.cn; Zhou, Jinyuan, E-mail: zhoujy@lzu.edu.cn; Han, Weihua

    2015-09-15

    Highlights: • IZO nanotubes with various indium contents were synthesized by electrospinning. • A well-crystallized indium-zinc-oxide solid solution formed in IZO-0.01 nanotubes. • Amorphous In{sub 2}O{sub 3} segregated at ZnO grain boundaries at high indium doping levels. • IZO-0.01 nanotubes show a high response and good selectivity to ethanol at 275 °C. - Abstract: Indium-doped ZnO (IZO) nanotubes with various indium contents (0.01–0.20) were synthesized via a facile electrospinning method. Results of X-ray diffraction and transmission electron microscopy demonstrate that all samples are consisted of hexagonal wurtzite-typed ZnO, showing a well-crystallized indium-zinc-oxide solid solution when only a small amount of zinc ions substituted by indium ions (0.01). Once the amount of indium dopants ≥0.05, there will form some amorphous In{sub 2}O{sub 3}, leading to a pronounced decrease in grain sizes. Gas-sensing performances revealed that the IZO nanotube-based sensors have enhanced ethanol-sensing characteristics, especially, sensor based on IZO-0.01 nanotubes shows the highest response (R{sub a}/R{sub g} = 81.7), which is twice that of the undoped ZnO nanotubes (40.0) toward 100 ppm ethanol at an operating temperature of 275 °C. And IZO-0.20 nanotube-based sensor presents a relatively high response at high ethanol concentrations. Our research suggested that these remarkable enhanced ethanol-sensing properties can be closely related to the formation of indium-zinc-oxide solid solutions and/or heterostructures between ZnO and amorphous In{sub 2}O{sub 3}.

  5. Effect of Ga doping and point defect on magnetism of ZnO

    Science.gov (United States)

    Hou, Qingyu; Zhao, Chunwang; Jia, Xiaofang; Qu, Lingfeng

    2017-02-01

    The combined influence mechanism of Ga doping and Zn vacancy or O vacancy on magnetism of ZnO is studied using the first-principle calculation. The coexistence of Ga doping and Zn vacancy can achieve a Curie temperature higher than room temperature and the Ga doped ZnO system is a p-type diluted degenerate semiconductor with metalized ferromagnetism. The magnetism of the doping system of Ga doping and Zn vacancy is mainly contributed by double-exchange interaction through the holes of Zn vacancy taking carrier as medium. However, the system of Ga doping and O vacancy is non-magnetic. In the coexistence of Ga doping and Zn vacancy or O vacancy, a close relative distance between doping and vacancy will reduce the formation energy of the doping system but increase the easiness of doping and vacancy, as well as enhance the stability of the doping system.

  6. Effect of Ga doping and point defect on magnetism of ZnO

    Energy Technology Data Exchange (ETDEWEB)

    Hou, Qingyu [College of Science, Inner Mongolia University of Technology, 010051 Hohhot (China); Zhao, Chunwang, E-mail: cwzhao@shmtu.edu.cn [College of Arts and Sciences, Shanghai Maritime University, 201306 Shanghai (China); Jia, Xiaofang; Qu, Lingfeng [College of Science, Inner Mongolia University of Technology, 010051 Hohhot (China)

    2017-02-01

    The combined influence mechanism of Ga doping and Zn vacancy or O vacancy on magnetism of ZnO is studied using the first-principle calculation. The coexistence of Ga doping and Zn vacancy can achieve a Curie temperature higher than room temperature and the Ga doped ZnO system is a p-type diluted degenerate semiconductor with metalized ferromagnetism. The magnetism of the doping system of Ga doping and Zn vacancy is mainly contributed by double-exchange interaction through the holes of Zn vacancy taking carrier as medium. However, the system of Ga doping and O vacancy is non-magnetic. In the coexistence of Ga doping and Zn vacancy or O vacancy, a close relative distance between doping and vacancy will reduce the formation energy of the doping system but increase the easiness of doping and vacancy, as well as enhance the stability of the doping system.

  7. A Retrospective Study on the Characteristics of Treating Nevus of Ota by 1064-nm Q-switched Neodymium-doped Yttrium Aluminum Garnet Laser

    Science.gov (United States)

    Liu, Yanting; Zeng, Weihui; Geng, Songmei

    2016-01-01

    Background: The Q-switched neodymium-doped yttrium aluminum garnet (QS Nd:YAG) laser has a significant effect in treating nevus of Ota, but there is lack of a retrospective study about the characteristics of efficacy. Aims and Objectives: To retrospectively analyze the correlation between the clinical characteristics and efficacy, complications, recurrence of QS Nd:YAG laser in treating nevus of Ota. Materials and Methods: One hundred and seventy-one Chinese patients (144 female, 27 male) of nevus of Ota were treated with the 1064-nm QS Nd:YAG laser. All cases were treated with fluencies of 4–8 J/cm2 and a spot size of 2–4 mm. Clinical photographs were taken before every treatment and patients were followed up by their clinicians. Results: One hundred and forty-five patients (84.8%) acquired more than 75% improvement with an average of 4.6 sessions. The treatment effect has no significant correlation with sex (P > 0.05). The blue-black and brown lesions improved more than the light-brown (P nevus of Ota. The efficacy correlated with lesion color, which is meaningful to estimate the prognosis. PMID:27293272

  8. Thermal effect mechanism of magnetoresistance in p-type diamond films

    Institute of Scientific and Technical Information of China (English)

    Qin Guo-Ping; Kong Chun-Yang; Ruan Hai-Bo; Huang Gui-Juan; Cui Yu-Ting; Fang Liang

    2010-01-01

    Based on the analysis and the discussion of the influence of thermal ionization energy and various scatterings on magnetoresistance(MR) of p-type diamond films, a revised model of valence band split-off over temperature is put forward, and a corresponding calculation formula is given for the MR of p-type diamond films (Corbino discs). It is shown that the theoretical calculation that the MR of diamond films changes with temperature is consistent with the experiment. The influence of Fermi energy level on MR of diamond films is discussed. Additionally, the thermal effect mechanism of MR in p-type diamond films is also explored.

  9. Optical, laser spectroscopic, and electrical characterization of transion metal doped zinc selenide and zinc sulfide nano-and-microcrystals

    Science.gov (United States)

    Kim, Changsu

    Middle-infrared lasers operating over a "molecular fingerprint" 2-15 mum spectral range are in great demand for a variety of applications. One of the best choices for lasing in the 2-5 mum spectral range is direct oscillation from divalent transition metal ions (TM2+: Cr 2+, Fe2+, Co2+)-doped wide bandgap II-VI semiconductor crystals. There are three major objectives in this dissertation: (1) Realize and study middle-infrared electroluminescence of n and p-type, Cr doped bulk ZnSe crystals. We have demonstrated a method of ZnSe crystals thermal-diffusion doping with donor (In, Zn, and Al) and acceptor (Cu, Ag, and N through CrN) impurities resulting in n and p-type conductivity of Cr:ZnSe. We are the first to our knowledge to obtain mid-IR electroluminescence in nominally p-type Cr:Ag:ZnSe, which could prove valuable for developing of novel mid-IR laser diodes. (2) En route to low dimensional gain material, develop simple method for making microscopic laser active Cr doped ZnSe, ZnS and CdSe powders, realize and study their laser spectroscopic characteristics. We have demonstrated a simple physical method of Cr2+:ZnSe, ZnS and CdSe powder fabrication with average sizes below ˜ 10mum and ˜1mum (eliminating stage of bulk crystal growth) and demonstrated first ever mid-IR random lasing on these powders under optical excitation. In addition, we have examine suspensions and polymer films impregnated with Cr:II-VI powders for random lasing in the mid-IR. The powder, suspension and polymer samples are fabricated and characterized through the measurement of photoluminescence (PL) spectra, PL kinetics, and lasing threshold energy. (3) En route to low dimensional gain material, develop method for making laser active Cr, Co, and Fe doped ZnSe and ZnS quantum dots (QD), realize and study their laser spectroscopic characteristics. We have demonstrated a novel method of TM doped II-VI QDs fabrication based on laser ablation in liquid and Ar environment. TM doped II-VI QDs

  10. Characteristics of sputtered Al-doped ZnO films for transparent electrodes of organic thin-film transistor

    Energy Technology Data Exchange (ETDEWEB)

    Park, Yong Seob, E-mail: yongspark2011@gmail.com [Department of Advanced Materials Engineering for Information and Electronics, Kyung Hee University, Yongin-si, 446-701 (Korea, Republic of); Department of Electrical and Electronic Engineering, Seonam University, Asan-si, 336-922 (Korea, Republic of); Kim, Han-Ki [Department of Electrical and Electronic Engineering, Seonam University, Asan-si, 336-922 (Korea, Republic of)

    2011-09-01

    Aluminum-doped ZnO (AZO) thin-films were deposited with various RF powers at room temperature by radio frequency (RF) magnetron sputtering method. The electrical properties of the AZO film were improved with the increasing RF power. These results can be explained by the improvement of the crystallinity in the AZO film. We fabricated the organic thin-film transistor (OTFT) of the bottom gate structure using pentacene active and poly-4-vinyl phenol gate dielectric layers on the indium tin oxide gate electrode, and estimated the device properties of the OTFTs including drain current-drain voltage (I{sub D}-V{sub D}), drain current-gate voltage (I{sub D}-V{sub G}), threshold voltage (V{sub T}), on/off ratio and field effect mobility. The AZO film that grown at 160 W RF power exhibited low resistivity (1.54 x 10{sup -3} {Omega}.cm), high crystallinity and uniform surface morphology. The pentacene thin-film transistor using the AZO film that's fabricated at 160 W RF power exhibited good device performance such as the mobility of 0.94 cm{sup 2}/V s and the on/off ratio of {approx} 10{sup 5}. Consequently, the performance of the OTFT such as larger field-effect carrier mobility was determined the conductivity of the AZO source/drain (S/D) electrode. AZO films prepared at room temperature by the sputtering method are suitable for the S/D electrodes in the OTFTs.

  11. Effective surface passivation of p-type crystalline silicon with silicon oxides formed by light-induced anodisation

    Energy Technology Data Exchange (ETDEWEB)

    Cui, Jie, E-mail: j.cui@unsw.edu.au [School of Photovoltaic and Renewable Energy Engineering, The University of New South Wales, Sydney 2052 (Australia); Grant, Nicholas [Centre for Sustainable Energy Systems, Australian National University, Canberra, A.C.T. 0200 (Australia); Lennon, Alison [School of Photovoltaic and Renewable Energy Engineering, The University of New South Wales, Sydney 2052 (Australia)

    2014-12-30

    Highlights: • The surface passivation by anodic SiO{sub 2} formed by light-induced anodisation is investigated. • The anodic SiO{sub 2} grows lower temperatures with shorter growth times. After annealing in oxygen and then forming gas the effective minority carrier lifetime is increased to 150 μs. • It shows a very low positive Q{sub eff} of 3.4 × 10{sup 11} cm{sup −2}, a moderate D{sub it} of 6 × 10{sup 11} eV{sup −1} cm{sup −2}. • It has a very low leakage current density suggesting its application in solar cell as a functional dielectric. - Abstract: Electronic surface passivation of p-type crystalline silicon by anodic silicon dioxide (SiO{sub 2}) was investigated. The anodic SiO{sub 2} was grown by light-induced anodisation (LIA) in diluted sulphuric acid at room temperature, a process that is significantly less-expensive than thermal oxidation which is widely-used in silicon solar cell fabrication. After annealing in oxygen and then forming gas at 400 °C for 30 min, the effective minority carrier lifetime of 3–5 Ω cm, boron-doped Czochralski silicon wafers with a phosphorus-doped 80 Ω/□ emitter and a LIA anodic SiO{sub 2} formed on the p-type surface was increased by two orders of magnitude to 150 μs. Capacitance–voltage measurements demonstrated a very low positive charge density of 3.4 × 10{sup 11} cm{sup −2} and a moderate density of interface states of 6 × 10{sup 11} eV{sup −1} cm{sup −2}. This corresponded to a silicon surface recombination velocity of 62 cm s{sup −1}, which is comparable with values reported for other anodic SiO{sub 2} films, which required higher temperatures and longer growth times, and significantly lower than oxides grown by chemical vapour deposition techniques. Additionally, a very low leakage current density of 3.5 × 10{sup −10} and 1.6 × 10{sup −9} A cm{sup −2} at 1 and −1 V, respectively, was measured for LIA SiO{sub 2} suggesting its potential application as insulation layer in

  12. Origin and evolution of metal P-type ATPases in Plantae (Archaeplastida)

    OpenAIRE

    2014-01-01

    Metal ATPases are a subfamily of P-type ATPases involved in the transport of metal cations across biological membranes. They all share an architecture featuring eight transmembrane domains in pairs of two and are found in prokaryotes as well as in a variety of Eukaryotes. In Arabidopsis thaliana, eight metal P-type ATPases have been described, four being specific to copper transport and four displaying a broader metal specificity, including zinc, cadmium and possibly copper and calcium. So fa...

  13. Theoretical luminescence spectra in p-type quantum wells and superlattices based on InGaAsN

    Energy Technology Data Exchange (ETDEWEB)

    Oliveira, Thiago Freire de; Rodrigues, Sara Cristina Pinto [Universidade Federal Rural de Pernambuco (UFRPE), Recife, PE (Brazil). Dept. de Fisica; Silva Junior, Eronides Felisberto da [Universidade Federal de Pernambuco (UFPE), Recife, PE (Brazil). Dept. de Fisica; Sipahi, Guilherme Matos [Universidade de Sao Paulo (IFSC/USP), Sao Carlos, SP (Brazil). Inst. de Fisica; Scolfaro, Luisa Maria Ribeiro [Texas State University, San Marcos, TX (United States), Dept. of Physics

    2012-07-01

    Full text: In the past few years, the dilute nitride system, InGaAsN, is proposed as a good candidate for several device applications. InGaAsN is considered a promising material for laser devices working at 1:3 or 1:5{mu}m and high-efficiency multijunction solar cells. Incorporation of In and N into GaAs result in a strong redshift of the emission wavelength. Besides, the strain can be minimized since the opposite effect of In and N on the lattice constant enables lattice matching of InGaAsN on GaAs. However, despite their great potential for applications, the understanding of their physical properties is rather incomplete. In particular, the dominant mechanisms of light emission in these alloys and their dependence on the nitrogen composition are not well established. Such information is crucial not only for a better understanding of the optical properties of the nitrogen containing III-V alloys, but also for a better technological control of alloy formation and optimization light emission efficiency. Another point concerns to investigation in p-type doping in InGaAsN. This is of great importance since, for example, can improve the transport in HBT (Heterojunction Bipolar Transistors) devices. In this work we report on theoretical luminescence spectra calculations for p-doped GaAs/InGaAsN quantum wells and superlattices. The calculations are performed within the k-vector.p-vector method by solving the full 8 x 8 Kane Hamiltonian, generalized to treat different materials. Strain effects due the lattice mismatch between InGaAsN and GaAs are taken into account. By varying the acceptor concentration we analyze the effect of exchange-correlation, which plays an important role in profile potential and electronic transition. These results can explain several important aspects about optical properties in these systems. (author)

  14. Enhanced H2S Sensing Performance of a p-type Semiconducting PdO-NiO Nanoscale Heteromixture

    Science.gov (United States)

    Balamurugan, C.; Jeong, Y. J.; Lee, D. W.

    2017-10-01

    Semiconducting nanocrystalline nickel oxide (NiO) and PdO-doped NiO heteromixture (2, 5 and 10 wt%) have been synthesized via a metal-citrate complex method. The obtained materials were further characterized using TG/DTA, FT-IR, UV-vis, XRD, XPS, BET/BJH, SEM and TEM analyses to determine their structural and morphological properties. The results indicated that the spherical, uniform PdO nanoparticles were densely deposited on the NiO surface mainly in diameters of 10-15 nm. Moreover, the existence of various defect states was also analyzed with the help of photoluminescence (PL) spectroscopy. The gas response characteristics of synthesized materials were evaluated in the presence and absence of toxic gases such as hydrogen sulfide (H2S), carbon monoxide (CO), liquid petroleum gas (LPG), and ethanol (C2H5OH). The experimental results revealed that the sensitivity and selectivity of the NiO-based sensor material are dependent on the weight% of PdO loading in the NiO nanopowder. Among the investigated compound, the 5 wt% PdO-doped NiO sensor material showed excellent sensitivity and selectivity to 100 ppm H2S with a fast response/recovery characteristics of 6 s and 10 s, respectively. Furthermore, the 5 wt% PdO-doped NiO based sensor showed a linear relationship between the different concentrations of H2S gas and a significantly higher response to H2S even at the low concentration of 20 ppm (43%) at 60 °C. The dominant H2S gas sensing mechanisms in the NiO and 5 wt% PdO-doped NiO nanomaterials are systematically discussed based on the obtained characterization results.

  15. Convergence of valence bands for high thermoelectric performance for p-type InN

    Science.gov (United States)

    Li, Hai-Zhu; Li, Ruo-Ping; Liu, Jun-Hui; Huang, Ming-Ju

    2015-12-01

    Band engineering to converge the bands to achieve high valley degeneracy is one of effective approaches for designing ideal thermoelectric materials. Convergence of many valleys in the valence band may lead to a high Seebeck coefficient, and induce promising thermoelectric performance of p-type InN. In the current work, we have systematically investigated the electronic structure and thermoelectric performance of wurtzite InN by using the density functional theory combined with semiclassical Boltzmann transport theory. Form the results, it can be found that intrinsic InN has a large Seebeck coefficient (254 μV/K) and the largest value of ZeT is 0.77. The transport properties of p-type InN are better than that of n-type one at the optimum carrier concentration, which mainly due to the large Seebeck coefficient for p-type InN, although the electrical conductivity of n-type InN is larger than that of p-type one. We found that the larger Seebeck coefficient for p-type InN may originate from the large valley degeneracy in the valence band. Moreover, the low minimum lattice thermal conductivity for InN is one key factor to become a good thermoelectric material. Therefore, p-type InN could be a potential material for further applications in the thermoelectric area.

  16. RETRACTED: P-type Zno thin films fabricated by Al-N co-doping method at different substrate temperature

    Science.gov (United States)

    Yuan, Guodong; Ye, Zhizhen; Qian, Qing; Zhu, Liping; Huang, Jingyun; Zhao, Binghui

    2005-01-01

    This article has been retracted at the request of the Editor-in-Chief. Please see Elsevier Policy on Article Withdrawal ( http://www.elsevier.com/locate/withdrawalpolicy). The editors and publisher would like to confirm the retraction of this paper at the request of the author Guodong Yuan. Reason: The SIMS profile published in this paper had already been included in articles published in Mater. Lett., 58 (2004) 3741-3744, and Thin Solid Films, 484 (2005) 420-425 describing a sample prepared under different conditions. The author did not notify either the Journal of Crystal Growth Editors or the coauthors of this fact. The author apologizes sincerely to the readers, referees, and Editors for violating the guidelines of ethical publication.Also the author apologizes to the coauthors for mishandling of the manuscript.

  17. Systematic Study of p-type Doping and Related Defects in III-Nitrides: Pathway toward a Nitride HBT

    Science.gov (United States)

    2012-11-20

    indium and gallium and were between 0.24 and 0.3 × 10-7 Torr normalized BEP . InGaN was grown via MME using a shutter modulation scheme similar to...surface for subsequent growth.18, 20-23 The aluminum flux during the buffer layer growth was 6x10-7 Torr beam equivalent pressure ( BEP ), and the...Gallium was supplied by either a standard effusion cell or a Veeco SUMO® cell at a metal-rich flux of 6.5x10-7 to 7.5x10-7 Torr BEP . Gallium and

  18. Characteristics of a high brightness gaseous field ion source employing tungsten-carbon doped NiAl needles

    Energy Technology Data Exchange (ETDEWEB)

    Mousa, Marwan S., E-mail: mmousa@mutah.edu.jo [Department of Physics, Mu' tah University, P.O. Box 7, Al-Karak (Jordan)

    2011-05-15

    We report on the characterization of a high brightness gaseous field ion source using an emitter made of a NiAl needle containing tiny spherical tungsten-carbon precipitates. By field evaporation of such a multiphase alloy, a surface protrusion is formed out of a precipitate, which can act as a small source size field ion emitter. The emission current-voltage characteristics of this emitter were recorded for a variety of parameters. The results obtained suggest that its application as a stable ion source is possible even on long term operation. -- Research highlights: {yields} High brightness gaseous field ion source of precipitation hardened NiAl+W+C emitter. {yields} Emission current-voltage characteristics are recorded for a variety of parameters. {yields} Very small virtual source sizes and energy spreads can be attained. {yields} Results suggest that application as long term stable ion source is possible.

  19. Fabrication and simulation of single crystal p-type Si nanowire using SOI technology

    Energy Technology Data Exchange (ETDEWEB)

    Dehzangi, Arash, E-mail: arashd53@hotmail.com [Institute of Microengineering and Nanoelectronics (IMEN), Universiti Kebangsaan Malaysia, 43600 Bangi, Selangor (Malaysia); Larki, Farhad [Institute of Microengineering and Nanoelectronics (IMEN), Universiti Kebangsaan Malaysia, 43600 Bangi, Selangor (Malaysia); Naseri, Mahmud G. [Department of Physics, Faculty of Science, Malayer University, Malayer, Hamedan (Iran, Islamic Republic of); Navasery, Manizheh [Department of Physics, Faculty of Science, Universiti Putra Malaysia, 43400 Serdang, Selangor (Malaysia); Majlis, Burhanuddin Y.; Razip Wee, Mohd F. [Institute of Microengineering and Nanoelectronics (IMEN), Universiti Kebangsaan Malaysia, 43600 Bangi, Selangor (Malaysia); Halimah, M.K. [Department of Physics, Faculty of Science, Universiti Putra Malaysia, 43400 Serdang, Selangor (Malaysia); Islam, Md. Shabiul; Md Ali, Sawal H. [Institute of Microengineering and Nanoelectronics (IMEN), Universiti Kebangsaan Malaysia, 43600 Bangi, Selangor (Malaysia); Saion, Elias [Department of Physics, Faculty of Science, Universiti Putra Malaysia, 43400 Serdang, Selangor (Malaysia)

    2015-04-15

    Highlights: • Single crystal silicon nanowire is fabricated on Si on insulator substrate, using atomic force microscope (AFM) nanolithography and KOH + IPA chemical wet etching. • Some of major parameters in fabrication process, such as writing speed and applied voltage along with KOH etching depth are investigated, and then the I–V characteristic of Si nanowires is measured. • For better understanding of the charge transmission through the nanowire, 3D-TCAD simulation is performed to simulate the Si nanowires with the same size of the fabricated ones, and variation of majority and minority carriers, hole quasi-Fermi level and generation/recombination rate are investigated. - Abstract: Si nanowires (SiNWs) as building blocks for nanostructured materials and nanoelectronics have attracted much attention due to their major role in device fabrication. In the present work a top-down fabrication approach as atomic force microscope (AFM) nanolithography was performed on Si on insulator (SOI) substrate to fabricate a single crystal p-type SiNW. To draw oxide patterns on top of the SOI substrate local anodic oxidation was carried out by AFM in contact mode. After the oxidation procedure, an optimized solution of 30 wt.% KOH with 10 vol.% IPA for wet etching at 63 °C was applied to extract the nanostructure. The fabricated SiNW had 70–85 nm full width at half maximum width, 90 nm thickness and 4 μm length. The SiNW was simulated using Sentaurus 3D software with the exact same size of the fabricated device. I–V characterization of the SiNW was measured and compared with simulation results. Using simulation results variation of carrier's concentrations, valence band edge energy and recombination generation rate for different applied voltage were investigated.

  20. Characteristics and Breakdown Behaviors of Polysilicon Resistors for High Voltage Applications

    Directory of Open Access Journals (Sweden)

    Xiao-Yu Tang

    2015-01-01

    Full Text Available With the rapid development of the power integrated circuit technology, polysilicon resistors have been widely used not only in traditional CMOS circuits, but also in the high voltage applications. However, there have been few detailed reports about the polysilicon resistors’ characteristics, like voltage and temperature coefficients and breakdown behaviors which are critical parameters of high voltage applications. In this study, we experimentally find that the resistance of the polysilicon resistor with a relatively low doping concentration shows negative voltage and temperature coefficients, while that of the polysilicon resistor with a high doping concentration has positive voltage and temperature coefficients. Moreover, from the experimental results of breakdown voltages of the polysilicon resistors, it could be deduced that the breakdown of polysilicon resistors is thermally rather than electrically induced. We also proposed to add an N-type well underneath the oxide to increase the breakdown voltage in the vertical direction when the substrate is P-type doped.

  1. Effects of lithium iodide doping on devolatilization characteristics of brown coals; Yoka lithium no tenka ga kattan no kanetsu henka katei ni oyobosu eikyo

    Energy Technology Data Exchange (ETDEWEB)

    Muraoka, J.; Kumagai, H.; Hayashi, J.; Chiba, T. [Hokkaido University, Sapporo (Japan)

    1996-10-28

    In order to discuss effects of lithium iodide (LiI) doping on condensation structure of brown coals during heating, spectral changes were measured by using an in-situ FT-IR. It was found that the LiI doping accelerates weight reduction due to heating, and the doping effect is affected by coal structure. Both of Loy Yang (LY) coal and its LiI doped coal (DLY) had absorption intensity of the FT-IR spectra decreased with rising temperature, and the absorption center belonging to an OH group shows different shifts between the LY and DLY coals. This indicates that the LiI doping has affected the change in hydrogen bonding patterns associated with heating. Both of South Banko (SB) and LY coals had the absorption spectral intensity in the OH group decreased as the weight reduction (conversion) rate increased. Reduction in the OH groups associated with heating is caused by volatilization and condensation reaction in light-gravity fraction. However, in the case of equal conversion rate, the LiI doped coal shows higher spectral intensity than the original coal, with the LiI doping suppressing reduction in the OH groups. It appears that the doping suppresses the condensation reaction between the OH groups. 2 refs., 6 figs., 1 tab.

  2. Effective field theory and Ab-initio calculation of p-type (Ga, Fe)N within LDA and SIC approximation

    Energy Technology Data Exchange (ETDEWEB)

    Salmani, E. [LMPHE, associe au CNRST (URAC 12), Faculte des Sciences, Universite Mohammed V-Agdal, Rabat (Morocco); Mounkachi, O. [Institute of Nanomaterials and Nanotechnology, MAScIR, Rabat (Morocco); Ez-Zahraouy, H., E-mail: ezahamid@fsr.ac.ma [LMPHE, associe au CNRST (URAC 12), Faculte des Sciences, Universite Mohammed V-Agdal, Rabat (Morocco); El Kenz, A. [LMPHE, associe au CNRST (URAC 12), Faculte des Sciences, Universite Mohammed V-Agdal, Rabat (Morocco); Hamedoun, M. [Institute of Nanomaterials and Nanotechnology, MAScIR, Rabat (Morocco); Benyoussef, A. [LMPHE, associe au CNRST (URAC 12), Faculte des Sciences, Universite Mohammed V-Agdal, Rabat (Morocco); Institute of Nanomaterials and Nanotechnology, MAScIR, Rabat (Morocco); Hassan II Academy of Science and Technology, Rabat (Morocco)

    2013-03-15

    Based on first-principles spin-density functional calculations, using the Korringa-Kohn-Rostoker method combined with the coherent potential approximation, we investigated the half-metallic ferromagnetic behavior of (Ga, Fe)N co-doped with carbon within the self-interaction-corrected local density approximation. Mechanism of hybridization and interaction between magnetic ions in p-type (Ga, Fe)N is investigated. Stability energy of ferromagnetic and disorder local moment states was calculated for different carbon concentration. The local density and the self-interaction-corrected approximations have been used to explain the strong ferromagnetic interaction observed and the mechanism that stabilizes this state. The transition temperature to the ferromagnetic state has been calculated within the effective field theory, with a Honmura-Kaneyoshi differential operator technique. - Highlights: Black-Right-Pointing-Pointer The paper focus on the study the magnetic properties and electronic structure of p-type (Ga, Fe)N within LDA and SIC approximation. Black-Right-Pointing-Pointer These methods allow us to explain the strong ferromagnetic interaction observed and the mechanism for its stability and the mechanism of hybridization and interaction between magnetic ions in p-type (Ga, Fe). Black-Right-Pointing-Pointer The results obtained are interesting and can be serve as a reference in the field of dilute magnetic semi conductor.

  3. The effects of N-doping and oxygen vacancy on the electronic structure and conductivity of PbTiO3

    Science.gov (United States)

    Peijiang, Niu; Jinliang, Yan; Delan, Meng

    2015-04-01

    By using spin-polarized density functional theory calculations, the electron density differences, band structures and density of states of p-type N-doped PbTiO3 have been studied. In addition, the oxygen vacancy in N-doped PbTiO3 is also discussed. After the nitrogen dopant is introduced into the crystal, the N-doped PbTiO3 system is spin-polarized, the spin-down valance bands move to a high energy level and the Fermi energy level moves to the top of the valance bands, finally the band gap is narrowed. In this process, the N-doped PbTiO3 shows typical p-type semiconductor characteristics. When an oxygen vacancy and N impurity coexist in PbTiO3, there is no spin-polarized phenomenon. The conduction bands move downward and the acceptors are found to be fully compensated. The calculation results are mostly consistent with the experimental data. Project supported by the National Natural Science Foundation of China (No. 10974077) and the Innovation Project of Shandong Graduate Education, China (No. SDYY13093).

  4. Electrical characterisation of p-doped distributed Bragg reflectors in electrically pumped GaInNAs VCSOAs for 1.3 {mu}m operation

    Energy Technology Data Exchange (ETDEWEB)

    Chaqmaqchee, F.A.I. [University of Essex, School of Computer Science and Electronic Engineering Colchester, CO43SQ (United Kingdom); Mazzucato, S., E-mail: smazzu@essex.ac.uk [University of Essex, School of Computer Science and Electronic Engineering Colchester, CO43SQ (United Kingdom); Sun, Y.; Balkan, N. [University of Essex, School of Computer Science and Electronic Engineering Colchester, CO43SQ (United Kingdom); Tiras, E. [Anadolu University, Faculty of Science, Physics Department, Yunus Emre Campus 26470, Eskisehir (Turkey); Hugues, M.; Hopkinson, M. [University of Sheffield, Electronic and Electrical Engineering Department, S1 3JD (United Kingdom)

    2012-06-05

    Highlights: Black-Right-Pointing-Pointer We electrically characterised two p-type doped DBRs for 1.3 {mu}m VCSOA applications. Black-Right-Pointing-Pointer Abrupt and graded structures were designed and investigated. Black-Right-Pointing-Pointer Longitudinal and vertical transports were measured as function of temperature. Black-Right-Pointing-Pointer Low series resistivity achieved using the interface composition grading technique. Black-Right-Pointing-Pointer Theoretical model confirmed the obtained results. - Abstract: The high resistivity that is encountered in p-type DBRs is an important problem in vertical cavity surface emitting lasers and optical amplifiers (VCSELs and VCSOAs). This is because the formation of potential barriers at the interfaces between layers of high and low refractive index inhibits the carrier flow, thus increasing the DBR series resistance. In this work, the electrical characteristics of two p-type doped DBR structures grown on undoped and p-type doped GaAs substrates have been investigated. The DBRs are designed for VCSOAs operating at 1.3 {mu}m and consist of 14-periods of alternating GaAs and Al{sub 0.9}Ga{sub 0.1}As in the first sample and 14-periods of GaAs and Al{sub 0.3}Ga{sub 0.7}As/Al{sub 0.9}Ga{sub 0.1}As in the second one. For the longitudinal transport sample, Hall mobility and sheet carrier density were measured in the temperature range from 77 to 300 K. In the vertical transport sample, current-voltage (I-V) measurements across the DBR layers were carried out at different temperatures in the range between 15 and 300 K. We achieved resistivity reduction in our samples by using an interface composition grading technique aimed at improving the VCSOA characteristics.

  5. Preparation and photoluminescence characteristics of Tb-, Sm- and Dy-doped Y{sub 2}O{sub 3} nanofibers by electrospinning

    Energy Technology Data Exchange (ETDEWEB)

    Li Xiaoyan; Chen Yuming [College of Chemistry and Materials Science, College of Environmental Science and Engineering, Fujian Normal University, Fuzhou 350007 (China); Fujian Modified Plastic Institute of Research and Technology Development, Fuzhou 350007 (China); Fujian Engineering Research Center of Environment-friendly Polymer Material, Fuzhou 350007 (China); Qian Qingrong, E-mail: qrqian@fjnu.edu.cn [College of Chemistry and Materials Science, College of Environmental Science and Engineering, Fujian Normal University, Fuzhou 350007 (China); Fujian Modified Plastic Institute of Research and Technology Development, Fuzhou 350007 (China); Fujian Engineering Research Center of Environment-friendly Polymer Material, Fuzhou 350007 (China); Liu Xinping; Xiao Liren [College of Chemistry and Materials Science, College of Environmental Science and Engineering, Fujian Normal University, Fuzhou 350007 (China); Fujian Modified Plastic Institute of Research and Technology Development, Fuzhou 350007 (China); Fujian Engineering Research Center of Environment-friendly Polymer Material, Fuzhou 350007 (China); Chen Qinghua, E-mail: cqhuar@pub5.fz.fj.cn [College of Chemistry and Materials Science, College of Environmental Science and Engineering, Fujian Normal University, Fuzhou 350007 (China); Fujian Modified Plastic Institute of Research and Technology Development, Fuzhou 350007 (China); Fujian Engineering Research Center of Environment-friendly Polymer Material, Fuzhou 350007 (China)

    2012-01-15

    An electrospinning-calcination strategy was established to fabricate Y{sub 2}O{sub 3} nanofibers doped with rare earth ions (Tb, Sm and Dy) using electrospun PVA/RE(NO{sub 3}){sub x}/Y(NO{sub 3}){sub 3} composite nanofibers as precursors (x=3.4). The prepared nanofibers were characterized by XRD, FESEM, EDS, (HR)TEM and PL analyses. Based on the experimental results, a solid-solid growth mechanism (SS) was proposed to describe the formation of inorganic crystalline fibers from organic/inorganic composite nanofibers by calcination. It was determined that carbonaceous nanoparticles that were formed in the process of pre-carbonization adsorbed Y{sub 2}O{sub 3}:RE nanoparticles to grow Y{sub 2}O{sub 3}:RE crystal, and the resultant nanofibers exhibited a typical crystalline domain with grain boundary. The obtained Y{sub 2}O{sub 3}:RE nanofibers possessed excellent luminescent characteristics and could be used as an appreciable luminescent material. - Highlights: > Fabricate Y{sub 2}O{sub 3}:RE fibers by the calcination of electrospun PVA/Y(NO{sub 3}){sub 3}/RE(NO{sub 3}){sub 3} composite nanofibers. > Prepared Y{sub 2}O{sub 3}:RE nanofibers display more intensive photoluminescence performance than the bulk materials. > Propose a solid-solid growth mechanism for the formation of inorganic crystalline fibers via calciation.

  6. Effect of deposition parameters and strontium doping on characteristics of nanostructured ZnO thin film by chemical bath deposition method

    Energy Technology Data Exchange (ETDEWEB)

    Sheeba, N. H., E-mail: sheebames.naser@gmail.com [M.E.S. Asmabi College, P. Vemballur, Thrissur, Kerala (India); Naduvath, J., E-mail: johnsnaduvath@gmail.com [Department of Metallurgical Engineering and Materials Science, Indian Institute of Technology, Mumbai (India); Abraham, A., E-mail: anithakklm@gmail.com; Philip, R. R., E-mail: reenatara@rediffmail.com [Thin Film Research Lab, U.C. College, Aluva, Kerala (India); Weiss, M. P., E-mail: matthew@hope.edu, E-mail: zachary.diener@hope.edu, E-mail: remillard@hope.edu, E-mail: deyoung@hope.edu; Diener, Z. J., E-mail: matthew@hope.edu, E-mail: zachary.diener@hope.edu, E-mail: remillard@hope.edu, E-mail: deyoung@hope.edu; Remillard, S. K., E-mail: matthew@hope.edu, E-mail: zachary.diener@hope.edu, E-mail: remillard@hope.edu, E-mail: deyoung@hope.edu; DeYoung, P. A., E-mail: matthew@hope.edu, E-mail: zachary.diener@hope.edu, E-mail: remillard@hope.edu, E-mail: deyoung@hope.edu [Hope Ion Beam Accelerator Laboratory, Hope College, Holland, MI (United States)

    2014-10-15

    Polycrystalline thin films of ZnO and Sr-doped ZnO (ZnO:Sr) on ultrasonically cleaned soda lime glass substrates are synthesized through successive ionic layer adsorption and reaction. The XRD profiles of ZnO and ZnO:Sr films prepared at different number of deposition cycles exhibit hexagonal wurtzite structure with preferred orientation along (002) direction. The crystallites are found to be nano sized, having variation in size with the increase in number of depositions cycles and also with Sr doping. Optical absorbance studies reveal a systematically controllable blueshift in band gap of Sr-doped ZnO films. SEM images indicate enhanced assembling of crystallites to form elongated rods as number of dips increased in Sr doped ZnO. The films are found to be n-type with the Sr doping having little effect on the electrical properties.

  7. Effect of deposition parameters and strontium doping on characteristics of nanostructured ZnO thin film by chemical bath deposition method

    Science.gov (United States)

    Sheeba, N. H.; Naduvath, J.; Abraham, A.; Weiss, M. P.; Diener, Z. J.; Remillard, S. K.; DeYoung, P. A.; Philip, R. R.

    2014-10-01

    Polycrystalline thin films of ZnO and Sr-doped ZnO (ZnO:Sr) on ultrasonically cleaned soda lime glass substrates are synthesized through successive ionic layer adsorption and reaction. The XRD profiles of ZnO and ZnO:Sr films prepared at different number of deposition cycles exhibit hexagonal wurtzite structure with preferred orientation along (002) direction. The crystallites are found to be nano sized, having variation in size with the increase in number of depositions cycles and also with Sr doping. Optical absorbance studies reveal a systematically controllable blueshift in band gap of Sr-doped ZnO films. SEM images indicate enhanced assembling of crystallites to form elongated rods as number of dips increased in Sr doped ZnO. The films are found to be n-type with the Sr doping having little effect on the electrical properties.

  8. Ion Transport and Discharge Characteristics of Polymer Blend (PVP/PVA) Electrolyte Films Doped with Potassium Iodide

    Science.gov (United States)

    Umadevi, C.; Mohan, K. R.; Achari, V. B. S.; Sharma, A. K.; Rao, V. V. R. N.

    2010-12-01

    Solid polymer blend electrolyte films based on PVP/PVA complexed with KI were prepared by the solution cast technique. Various experimental techniques such as electrical conductivity and transport number measurement were used to characterize the polymer electrolyte films. Electrochemical cells with the polymer electrolytes (PVP+PVA+KI) were fabricated in the configuration K/(PVP+PVA+KI)/ (I2+C+electrode). The discharge characteristics of the cells were studied under a constant load of 100 KΩ. The open-circuit voltage, short-circuit current and discharge time for the plateau region are measured. Several other cell parameters were evaluated and are reported.

  9. Combinatorial discovery through a distributed outreach program: investigation of the photoelectrolysis activity of p-type Fe, Cr, Al oxides.

    Science.gov (United States)

    Rowley, John G; Do, Thanh D; Cleary, David A; Parkinson, B A

    2014-06-25

    We report the identification of a semiconducting p-type oxide containing iron, aluminum, and chromium (Fe2-x-yCrxAlyO3) with previously unreported photoelectrolysis activity that was discovered by an undergraduate scientist participating in the Solar Hydrogen Activity research Kit (SHArK) program. The SHArK program is a distributed combinatorial science outreach program designed to provide a simple and inexpensive way for high school and undergraduate students to participate in the search for metal oxide materials that are active for the photoelectrolysis of water. The identified Fe2-x-yCrxAlyO3 photoelectrolysis material possesses many properties that make it a promising candidate for further optimization for potential application in a photoelectrolysis device. In addition to being composed of earth abundant elements, the FeCrAl oxide material has a band gap of 1.8 eV. Current-potential measurements for Fe2-x-yCrxAlyO3 showed an open circuit photovoltage of nearly 1 V; however, the absorbed photon conversion efficiency for hydrogen evolution was low (2.4 × 10(-4) at 530 nm) albeit without any deposited hydrogen evolution catalyst. X-ray diffraction of the pyrolyzed polycrystalline thin Fe2-x-yCrxAlyO3 film on fluorine-doped tin oxide substrates shows a hexagonal phase (hematite structure) and scanning electron microscope images show morphology consisting of small crystallites.

  10. Low specific contact resistance on epitaxial p-type 4H-SiC with a step-bunching surface

    Institute of Scientific and Technical Information of China (English)

    韩超; 张玉明; 宋庆文; 汤晓燕; 张义门; 郭辉; 王悦湖

    2015-01-01

    This paper reports the performances of Ti/Al based ohmic contacts fabricated on highly doped p-type 4H-SiC epitaxial layer which has a severe step-bunching surface. Different contact schemes are investigated based on the Al:Ti composition with no more than 50 at.%Al. The specific contact resistance (SCR) is obtained to be as low as 2.6 × 10−6Ω·cm2 for the bilayered Ti(100 nm)/Al(100 nm) contact treated with 3 min rapid thermal annealing (RTA) at 1000◦C. The microstructure analyses examined by physical and chemical characterization techniques reveal an alloy-assisted ohmic contact formation mechanism, i.e., a high degree of alloying plays a decisive role in forming the interfacial ternary Ti3SiC2 dominating the ohmic behavior of the Ti/Al based contact. Furthermore, a globally covered Ti3SiC2 layer with (0001)-oriented texture can be formed, regardless of the surface step bunching as well as its structural evolution during the metallization annealing.

  11. Limits on the use of cobalt sulfide as anode of p-type dye-sensitized solar cells

    Science.gov (United States)

    Bonomo, Matteo; Congiu, Mirko; De Marco, Maria Letizia; Dowling, Denis P.; Di Carlo, Aldo; Graeff, Carlos F. O.; Dini, Danilo

    2017-06-01

    Thin films of cobalt sulfide (CoS) of thickness l  traditional platinized fluorine-doped indium oxide (Pt-FTO) due to the lower cost of the starting materials (Co salts) and the easier procedure of deposition onto large area substrates. The latter process was carried out via direct precipitation of CoS from aqueous solutions. The photoconversion efficiency (η) of the corresponding device was 0.07%. This value is about 35% less than the efficiency that is obtained with the analogous p-DSC employing the Pt-FTO anode (η  =  0.11). Unlike p-DSCs based on Pt-FTO anodes, the photoelectrochemical cells employing CoS electrodes showed that this anodic material was not able to sustain the photocurrent densities generated by P1-sensitized NiO at a given photopotential. Illumination of the p-DSCs with CoS anodes and P1-sensitized NiO cathodes actually induced the reverse bias of the photoelectrochemical cell with CoS behaving like a p-type semiconductor with no degeneracy. Dedicated to Professor Roberto Federici on the occasion of his retirement.

  12. P-type AlAs/[GaAs/AlAs] Semiconductor/Superlattice DBR Grown by MBE

    Institute of Scientific and Technical Information of China (English)

    2001-01-01

    A p-type AlAs(70.2 nm)/16.5 period [GaAs(3 nm)/AlAs(0.7 nm)] semiconductor/superlatice distributed Bragg reflector (DBR) has been grown on n+-GaAs(100) substrate by V80H molecular beam epitaxy system. Experimental reflection spectrum shows that its central wavelength is 820 nm, with the peak reflectivity for 10-pair DBR of as high as 96 %, and the reflection bandwidth of as wide as 90 nm. We formed a 20×20 μm2 square mesa to measure the series resistance using wet chemical etching. From the measurement result, the series resistance of about 50 Ω is obtained at a moderate doping (3×1018 cm-3). Finally, the dependence of the resistance of the DBR on the temperature is analyzed. From the experimental result, it is found that the mechanism of the low series resistance of this kind of DBR may increase the tunneling current in the semiconductor/superlattice mirror structure, which will result in a decrease in series resistance.

  13. Ultrafast Dynamics of Hole Injection and Recombination in Organometal Halide Perovskite Using Nickel Oxide as p-Type Contact Electrode.

    Science.gov (United States)

    Corani, Alice; Li, Ming-Hsien; Shen, Po-Shen; Chen, Peter; Guo, Tzung-Fang; El Nahhas, Amal; Zheng, Kaibo; Yartsev, Arkady; Sundström, Villy; Ponseca, Carlito S

    2016-04-01

    There is a mounting effort to use nickel oxide (NiO) as p-type selective electrode for organometal halide perovskite-based solar cells. Recently, an overall power conversion efficiency using this hole acceptor has reached 18%. However, ultrafast spectroscopic investigations on the mechanism of charge injection as well as recombination dynamics have yet to be studied and understood. Using time-resolved terahertz spectroscopy, we show that hole transfer is complete on the subpicosecond time scale, driven by the favorable band alignment between the valence bands of perovskite and NiO nanoparticles (NiO(np)). Recombination time between holes injected into NiO(np) and mobile electrons in the perovskite material is shown to be hundreds of picoseconds to a few nanoseconds. Because of the low conductivity of NiO(np), holes are pinned at the interface, and it is electrons that determine the recombination rate. This recombination competes with charge collection and therefore must be minimized. Doping NiO to promote higher mobility of holes is desirable in order to prevent back recombination.

  14. A retrospective study on the characteristics of treating nevus of ota by 1064-nm q-switched neodymium-doped yttrium aluminum garnet laser

    Directory of Open Access Journals (Sweden)

    Yanting Liu

    2016-01-01

    Full Text Available Background: The Q-switched neodymium-doped yttrium aluminum garnet (QS Nd:YAG laser has a significant effect in treating nevus of Ota, but there is lack of a retrospective study about the characteristics of efficacy. Aims and Objectives: To retrospectively analyze the correlation between the clinical characteristics and efficacy, complications, recurrence of QS Nd:YAG laser in treating nevus of Ota. Materials and Methods: One hundred and seventy-one Chinese patients (144 female, 27 male of nevus of Ota were treated with the 1064-nm QS Nd:YAG laser. All cases were treated with fluencies of 4–8 J/cm2 and a spot size of 2–4 mm. Clinical photographs were taken before every treatment and patients were followed up by their clinicians. Results: One hundred and forty-five patients (84.8% acquired more than 75% improvement with an average of 4.6 sessions. The treatment effect has no significant correlation with sex (P > 0.05. The blue-black and brown lesions improved more than the light-brown (P < 0.05. Hyperpigmentation affected two (1.2% of the patients and hypopigmentation affected one patient (0.6%. No other adverse effect was observed. Recurrence was seen in two patients (1.2%. Conclusion: The 1064-nm QS Nd:YAG laser is effective with rare complications and recurrence in the treatment of nevus of Ota. The efficacy correlated with lesion color, which is meaningful to estimate the prognosis.

  15. Comparison of p-type commercial electron diodes for in vivo dosimetry.

    Science.gov (United States)

    Marre, D; Marinello, G

    2004-01-01

    This paper compares the characteristics of three types of commercial p-type electron diodes specially designed for in vivo dosimetry (Scanditronix EDD2, Sun Nuclear QED 111200-0 and PTW T60010E diodes coupled with a Therados DPD510 dosimeter) in electron fields with energies from 4.5 to 21 MeV, and in conditions similar to those encountered in radiotherapy. In addition to the diodes, a NACP plane parallel ionization chamber and film dosimeters have been used in the experiments. The influence of beam direction on the diode responses (directional effect) was investigated. It was found to be the greatest for the lowest electron beam energy. At 12 MeV and an incidence of +/- 30 degrees, the variation was found to be less than 1% for the Scanditronix and Sun Nuclear diodes and less than 3% for the PTW one. The three diodes exhibited a variation in sensitivity with dose-per-pulse of less than 1% over the range 0.18-0.43 mGy/pulse. The temperature dependence was also studied. The response was linear for the three diodes between 22.2 and 40 degrees C and the sensitivity variations with temperature were (0.25+/-0.01)%/degree C, (0.28+/-0.01)%/degree C, and (0.02 +/-0.01)%/degree C for Scanditronix, Sun Nuclear, and PTW diodes, respectively. Finally the perturbation to the irradiation field induced by the presence of diodes placed at the surface of a homogeneous phantom was investigated and found to be significant, both at the surface and at the depth of maximum dose (several tens of percent) for all three diode types. There is an increase of dose right underneath the diode (close to the surface) and a dose shadow at the depth of maximum. The study shows that electron diodes can be used for in vivo dosimetry provided their characteristics are carefully established before use and taken into consideration at the time of interpretation of the results.

  16. Nanostructured p-Type Semiconductor Electrodes and Photoelectrochemistry of Their Reduction Processes

    Directory of Open Access Journals (Sweden)

    Matteo Bonomo

    2016-05-01

    Full Text Available This review reports the properties of p-type semiconductors with nanostructured features employed as photocathodes in photoelectrochemical cells (PECs. Light absorption is crucial for the activation of the reduction processes occurring at the p-type electrode either in the pristine or in a modified/sensitized state. Beside thermodynamics, the kinetics of the electron transfer (ET process from photocathode to a redox shuttle in the oxidized form are also crucial since the flow of electrons will take place correctly if the ET rate will overcome that one of recombination and trapping events which impede the charge separation produced by the absorption of light. Depending on the nature of the chromophore, i.e., if the semiconductor itself or the chemisorbed dye-sensitizer, different energy levels will be involved in the cathodic ET process. An analysis of the general properties and requirements of electrodic materials of p-type for being efficient photoelectrocatalysts of reduction processes in dye-sensitized solar cells (DSC will be given. The working principle of p-type DSCs will be described and extended to other p-type PECs conceived and developed for the conversion of the solar radiation into chemical products of energetic/chemical interest like non fossil fuels or derivatives of carbon dioxide.

  17. Recent Developments in p-Type Oxide Semiconductor Materials and Devices

    KAUST Repository

    Wang, Zhenwei

    2016-02-16

    The development of transparent p-type oxide semiconductors with good performance may be a true enabler for a variety of applications where transparency, power efficiency, and greater circuit complexity are needed. Such applications include transparent electronics, displays, sensors, photovoltaics, memristors, and electrochromics. Hence, here, recent developments in materials and devices based on p-type oxide semiconductors are reviewed, including ternary Cu-bearing oxides, binary copper oxides, tin monoxide, spinel oxides, and nickel oxides. The crystal and electronic structures of these materials are discussed, along with approaches to enhance valence-band dispersion to reduce effective mass and increase mobility. Strategies to reduce interfacial defects, off-state current, and material instability are suggested. Furthermore, it is shown that promising progress has been made in the performance of various types of devices based on p-type oxides. Several innovative approaches exist to fabricate transparent complementary metal oxide semiconductor (CMOS) devices, including novel device fabrication schemes and utilization of surface chemistry effects, resulting in good inverter gains. However, despite recent developments, p-type oxides still lag in performance behind their n-type counterparts, which have entered volume production in the display market. Recent successes along with the hurdles that stand in the way of commercial success of p-type oxide semiconductors are presented.

  18. Recent Developments in p-Type Oxide Semiconductor Materials and Devices.

    Science.gov (United States)

    Wang, Zhenwei; Nayak, Pradipta K; Caraveo-Frescas, Jesus A; Alshareef, Husam N

    2016-05-01

    The development of transparent p-type oxide semiconductors with good performance may be a true enabler for a variety of applications where transparency, power efficiency, and greater circuit complexity are needed. Such applications include transparent electronics, displays, sensors, photovoltaics, memristors, and electrochromics. Hence, here, recent developments in materials and devices based on p-type oxide semiconductors are reviewed, including ternary Cu-bearing oxides, binary copper oxides, tin monoxide, spinel oxides, and nickel oxides. The crystal and electronic structures of these materials are discussed, along with approaches to enhance valence-band dispersion to reduce effective mass and increase mobility. Strategies to reduce interfacial defects, off-state current, and material instability are suggested. Furthermore, it is shown that promising progress has been made in the performance of various types of devices based on p-type oxides. Several innovative approaches exist to fabricate transparent complementary metal oxide semiconductor (CMOS) devices, including novel device fabrication schemes and utilization of surface chemistry effects, resulting in good inverter gains. However, despite recent developments, p-type oxides still lag in performance behind their n-type counterparts, which have entered volume production in the display market. Recent successes along with the hurdles that stand in the way of commercial success of p-type oxide semiconductors are presented.

  19. Characteristics of N-doped TiO{sub 2} nanotube arrays by N{sub 2}-plasma for visible light-driven photocatalysis

    Energy Technology Data Exchange (ETDEWEB)

    Liu Xu [College of Chemical Engineering, Sichuan University, Chengdu 610065 (China); Liu Zhongqing, E-mail: 301zql@vip.sina.com [College of Chemical Engineering, Sichuan University, Chengdu 610065 (China); Zheng Jian; Yan Xin; Li Dandan; Chen Si [College of Chemical Engineering, Sichuan University, Chengdu 610065 (China); Chu Wei, E-mail: chuwei1965_scu@yahoo.com [College of Chemical Engineering, Sichuan University, Chengdu 610065 (China)

    2011-10-13

    Highlights: > A new pathway is provided to prepare N-doped TiO2 nanotube arrays using N{sub 2}-plasma treatment. > N{sub 2}-plasma treatment did not wreck the structure of nanotube arrays. > Nitrogen doping promoted the phase transition to rutile phase at low annealing temperatures > Nitrogen doping narrow band gap of TiO{sub 2} and improve the photocatalytic activity of samples. - Abstract: N-doped TiO{sub 2} nanotube arrays were prepared by electrochemical anode oxidation of Ti foil followed by treatment with N{sub 2}-plasma and subsequent annealed under Ar atmosphere. The morphologies, composition and optical properties of N-doped TiO{sub 2} nanotube arrays were characterized using field-emission scanning electron microscope (FE-SEM), transmission electron microscope (TEM), X-ray photoelectron spectroscopy (XPS), X-ray diffraction spectrometer (XRD), Photoluminescence (PL) and UV-vis diffusion reflection spectroscopy (UV-vis DRS). Methylene blue (MB) solution was utilized as the degradation model to evaluate the photocatalytic activity of the samples under visible light irradiation. The results suggested N{sub 2}-plasma treatment created doping of nitrogen onto the surface of photoelectrodes successfully and the N-doped TiO{sub 2} nanotube arrays display a significantly enhancement of the photocatalytic activity comparing with the pure TiO{sub 2} nanotube arrays under the visible light irradiation.

  20. Transparent p-type SnO nanowires with unprecedented hole mobility among oxide semiconductors

    KAUST Repository

    Caraveo-Frescas, J. A.

    2013-11-25

    p-type tin monoxide (SnO) nanowire field-effect transistors with stable enhancement mode behavior and record performance are demonstrated at 160 °C. The nanowire transistors exhibit the highest field-effect hole mobility (10.83 cm2 V−1 s−1) of any p-type oxide semiconductor processed at similar temperature. Compared to thin film transistors, the SnO nanowire transistors exhibit five times higher mobility and one order of magnitude lower subthreshold swing. The SnO nanowire transistors show three times lower threshold voltages (−1 V) than the best reported SnO thin film transistors and fifteen times smaller than p-type Cu 2O nanowire transistors. Gate dielectric and process temperature are critical to achieving such performance.

  1. Demethoxycurcumin is a potent inhibitor of P-type ATPases from diverse kingdoms of life

    DEFF Research Database (Denmark)

    Dao, Trong Tuan; Sehgal, Pankaj; Thanh Tung, Truong;

    2016-01-01

    the curcuminoids, demethoxycurcumin was the most potent inhibitor of all tested P-type ATPases from fungal (Pma1p; H+-ATPase), plant (AHA2; H+-ATPase) and animal (SERCA; Ca2+-ATPase) cells. All three curcuminoids acted as non-competitive antagonist to ATP and hence may bind to a highly conserved allosteric site......P-type ATPases catalyze the active transport of cations and phospholipids across biological membranes. Members of this large family are involved in a range of fundamental cellular processes. To date, a substantial number of P-type ATPase inhibitors have been characterized, some of which are used...... as drugs. In this work a library of natural compounds was screened and we first identified curcuminoids as plasma membrane H+-ATPases inhibitors in plant and fungal cells. We also found that some of the commercial curcumins contain several curcuminoids. Three of these were purified and, among...

  2. Design of n - and p -type oxide thermoelectrics in LaNiO3/SrTiO3(001 ) superlattices exploiting interface polarity

    Science.gov (United States)

    Geisler, Benjamin; Blanca-Romero, Ariadna; Pentcheva, Rossitza

    2017-03-01

    We investigate the structural, electronic, transport, and thermoelectric properties of LaNiO3/SrTiO3(001 ) superlattices containing either exclusively n - or p -type interfaces or coupled interfaces of opposite polarity by using density functional theory calculations with an on-site Coulomb repulsion term. The results show that significant octahedral tilts are induced in the SrTiO3 part of the superlattice. Moreover, the La-Sr distances and Ni-O out-of-plane bond lengths at the interfaces exhibit a distinct variation by about 7 % with the sign of the electrostatic doping. In contrast to the much studied LaAlO3/SrTiO3 system, the charge mismatch at the interfaces is exclusively accommodated within the LaNiO3 layers, whereas the interface polarity leads to a band offset and to the formation of an electric field within the coupled superlattice. Features of the electronic structure indicate an orbital-selective quantization of quantum well states. The potential- and confinement-induced multiband splitting results in complex cylindrical Fermi surfaces with a tendency towards nesting that depends on the interface polarity. The analysis of the thermoelectric response reveals a particularly large positive Seebeck coefficient (135 μ V /K) and a high figure of merit (0.35) for room-temperature cross-plane transport in the p -type superlattice that is attributed to the participation of the SrTiO3 valence band. Superlattices with either n - or p -type interfaces show cross-plane Seebeck coefficients of opposite sign and thus emerge as a platform to construct an oxide-based thermoelectric generator with structurally and electronically compatible n - and p -type oxide thermoelectrics.

  3. Characteristics of Fluorine-doped tin oxide thin films grown by Streaming process for Electrodeless Electrochemical Deposition

    Science.gov (United States)

    Yusuf, Gbadebo; Khalilzadeh-Rezaie, Farnood; Cleary, Justin W.; Oladeji, Isaiah O.; Suu, Koukou; Schoenfeld, Winston V.; Peale, Robert E.; Awodugba, Ayodeji O.

    2015-04-01

    This work investigated the characteristics of SnO2: F films grown by Streaming Process for Electrodeless Electrochemical Deposition (SPEED). Stannic chloride (SnCl4) and ammonium fluoride (NH4 F) was dissolved in a mixture of deionized water and organic solvents. The preheated substrate temperature was varied between 450 and 530° C. High quality SnO2: F films were grown at all the substrate temperatures studied. The typical film thickness was 250 nm. XRD shows that the grown films are polycrystalline SnO2 with a tetragonal crystal structure. The average optical transmission of the films was around 93% throughout the wavelength of 400 to 1000 nm. The lowest electrical resistivity achieved was 6 x 10-4 Ω cm. The Hall measurements showed that the film is an n-type semiconductor, with the highest carrier mobility of 8.3 cm2/V.s, and concentration of 1 x 1021 cm-3. The direct band gap was determined to be 4 eV from the transmittance spectrum.

  4. Synthesis and luminescence characteristics of Dy{sup 3+} doped KLa(PO{sub 3}){sub 4}

    Energy Technology Data Exchange (ETDEWEB)

    Chemingui, S.; Ferhi, M., E-mail: ferhi.mounir@gmail.com; Horchani-Naifer, K.; Férid, M.

    2015-10-15

    Polycrystalline powders of KLa{sub (1−x)}Dy{sub x}(PO{sub 3}){sub 4} (x=0.5%, 1%, 5% and 10%) with linear chain have been grown by solid state reaction. The obtained powders are characterized by X-ray powder diffraction, FTIR and Raman spectroscopies. Emission, excitation spectra and decay curves analysis have been used to study the spectroscopic properties of Dy{sup 3+} in KLa(PO{sub 3}){sub 4}. The photoluminescence spectra show two characteristic blue and yellow bands of Dy{sup 3+}. The yellow-to-blue emission intensity ratios and CIE chromaticity coordinates have been determined from emission spectra to evaluate the emitted light as function of Dy{sup 3+} concentration. The measured decay rates for {sup 4}F{sub 9/2}→{sup 6}H{sub 15/2} deviated from exponential to non-exponential shape with increase of Dy{sup 3+} concentration. The observed non-exponential behavior of the decay curve has been fitted to Inokuti–Hirayama model, which indicates that the energy transfer between the donor and the acceptor is of dipole–dipole nature. The energy transfer, between the donor (excited Dy{sup 3+}) and the acceptor (unexcited Dy{sup 3+}), increases with Dy{sup 3+} ions concentration. - Highlights: • Polycrystalline powders of KLa{sub (1−x)}Dy{sub x}(PO{sub 3}){sub 4} were grown by solid state reaction. • The obtained samples are characterized by XRD, FTIR and Raman spectroscopies. • The luminescent properties of Dy{sup 3+} in KLa(PO{sub 3}){sub 4} are investigated. • Lifetime and chromatic coordinates depend strongly on Dy{sup 3+} concentration. • White and blue emissions are obtained at high and low concentration, respectively.

  5. The infuence of different interfaces on electrical and optical characteristics of Te doped ALGaAsSB/ALAsSB Bragg Mirrors on InP

    Directory of Open Access Journals (Sweden)

    Jean C Harmand

    2008-08-01

    Full Text Available The electrical and optical properties of non-doped and Te doped 6.5 periods AlGaAsSb/AlAsSb Bragg mirrors on InP grown by MBE with different types of interfaces between ternary and quaternary layers are reported. The techniques employed were photoluminescence, refectivity and IxV measurements. The digital alloy gradient interface seems to be the best alternative to optimize conduction without significant refectivity losses.

  6. Photoelectrochemical hydrogen-evolution over p-type chalcopyrite CuInSe{sub 2}

    Energy Technology Data Exchange (ETDEWEB)

    Djellal, L. [Laboratoire des Solutions Solides, Faculte de Physique, (USTHB) BP 32 El Alia 16111, Algiers (Algeria); Omeiri, S.; Bouguelia, A. [Laboratoire de Stockage et de Valorisation des Energies Renouvelables, Faculte de Chimie, (USTHB) BP 32 El Alia 16111, Algiers (Algeria); Trari, M. [Laboratoire de Stockage et de Valorisation des Energies Renouvelables, Faculte de Chimie, (USTHB) BP 32 El Alia 16111, Algiers (Algeria)], E-mail: mtrari@caramail.com

    2009-05-12

    Photocatalytic H{sub 2}-production has been realized over active CuInSe{sub 2}, synthesized by the fusion technique. The material crystallizes in the chalcopyrite structure and exhibits p-type conductivity ascribed to copper deficiency. An optical gap of 0.95 eV was determined from the reflectance diffuse spectrum. The electrical conductivity follows an Arrhenius-type law with activation energy of 23 meV in conformity with polaron hopping. The slope and the intercept of the Mott-Schottky plot gave a holes density N{sub A} of 5.9 x 10{sup 18} cm{sup -3} and a flat band potential of -0.36V{sub SCE}, in perfect agreement with the photo-onset potential V{sub on} (-0.35V{sub SCE}). Hence, the conduction band, located at -1.29V{sub SCE}, allows a spontaneous H{sub 2} liberation upon visible light. In aqueous solutions, the material is stabilized by hole consumption involving X{sup 2-} species (=S{sup 2-} and SO{sub 3}{sup 2-}). H{sub 2} formation would become thermodynamically easy in alkaline media and the best photoactivity was obtained in thiosulfate electrolyte (10{sup -2} M S{sub 2}O{sub 3}{sup 2-}, 0.5 M KOH) with an evolution rate of 0.009 ml mg{sup -1} h{sup -1}. The light induced electron transfer through the interface involves two steps mechanism where S{sub 2}O{sub 3}{sup 2-} is oxidized to SO{sub 3}{sup 2-} and SO{sub 4}{sup 2-} by successive reactions. Such results are corroborated by the semi logarithmic plots and photocurrent-photopotential characteristics. The influence of pH was studied with S{sub 2}O{sub 3}{sup 2-} The tendency towards saturation for prolonged irradiation is attributed to competitive reductions of the end products S{sub n}{sup 2-} and S{sub 2}O{sub 6}{sup 2-} with water and to the yellow color of polysulfide S{sub n}{sup 2-}.

  7. Cat-doping: Novel method for phosphorus and boron shallow doping in crystalline silicon at 80 °C

    Energy Technology Data Exchange (ETDEWEB)

    Matsumura, Hideki; Hayakawa, Taro; Ohta, Tatsunori; Nakashima, Yuki; Miyamoto, Motoharu; Thi, Trinh Cham; Koyama, Koichi; Ohdaira, Keisuke [Japan Advanced Institute of Science and Technology (JAIST), Asahidai, Nomi-shi, Ishikawa-ken 923-1292 (Japan)

    2014-09-21

    Phosphorus (P) or boron (B) atoms can be doped at temperatures as low as 80 to 350 °C, when crystalline silicon (c-Si) is exposed only for a few minutes to species generated by catalytic cracking reaction of phosphine (PH₃) or diborane (B₂H₆) with heated tungsten (W) catalyzer. This paper is to investigate systematically this novel doping method, “Cat-doping”, in detail. The electrical properties of P or B doped layers are studied by the Van der Pauw method based on the Hall effects measurement. The profiles of P or B atoms in c-Si are observed by secondary ion mass spectrometry mainly from back side of samples to eliminate knock-on effects. It is confirmed that the surface of p-type c-Si is converted to n-type by P Cat-doping at 80 °C, and similarly, that of n-type c-Si is to p-type by B Cat-doping. The doping depth is as shallow as 5 nm or less and the electrically activated doping concentration is 10¹⁸ to 10¹⁹cm⁻³ for both P and B doping. It is also found that the surface potential of c-Si is controlled by the shallow Cat-doping and that the surface recombination velocity of minority carriers in c-Si can be enormously lowered by this potential control.

  8. CO2 Reforming Characteristics under Visible Light Response of Cr- or Ag-Doped TiO2 Prepared by Sol-Gel and Dip-Coating Process

    Directory of Open Access Journals (Sweden)

    Akira Nishimura

    2012-01-01

    Full Text Available A Cr- or Ag-doped TiO2 film was prepared by sol-gel and dip-coating process and used as the photocatalyst for CO2 reforming under the visible light. The ratio of amount of Cr or Ag added to amount of Ti in TiO2 sol solution (R varied from 0 to 100 wt% or 0 to 50 wt%, respectively. The total layer number of Cr- or Ag-doped TiO2 film (N coated was changed. The CO2 reforming performance with the Cr- or Ag-doped TiO2 film was tested under a Xe lamp with or without ultraviolet (UV light. As a result, when N equals to 1, the concentration of CO which was a product from CO2 reforming was maximized in Cr doping case for R = 70 wt% and in Ag doping case for R = 1 wt%, respectively. The best result of concentration of CO = 8306 ppmV, concentration of CH4 = 1367 ppmV, concentration of C2H6 = 1712 ppmV is obtained when top=7 with Cr doping in this study.

  9. Relative Frequencies of G and P Types among Rotaviruses from Indian Diarrheic Cow and Buffalo Calves

    Science.gov (United States)

    Gulati, Baldev R.; Nakagomi, Osamu; Koshimura, Yumi; Nakagomi, Toyoko; Pandey, Ramayan

    1999-01-01

    While an increasing number of studies suggest that there is a high prevalence of rotaviruses with P8[11], a typical P type of bovine rotavirus (BRV), among human neonates or infants in India, no data are available on the distribution of G and P types of Indian BRVs. Thus, fecal specimens were collected from cow and buffalo calves under 1 month of age on organized dairy farms in India during the period between 1994 and 1997, and 36 rotavirus-positive specimens were used to determine the relative frequencies of the G and P types of Indian BRVs. As to the G type, G10 was predominant (83%), followed by G6 (6%). The majority (94%) of BRVs had P8[11], and only one isolate possessed P6[1]. The most common combination of G and P types was G10P8[11] (81%), followed by G6P6[1] (3%) and G6P8[11] (3%). The high prevalence of BRVs possessing P8[11] VP4s strongly supports the hypothesis that BRVs may cross the host species barrier and circulate among neonates in India. PMID:10325385

  10. Characterization of 3D-DDTC detectors on p-type substrates

    CERN Document Server

    Betta, G -F Dalla; Bosisio, Luciano; Darbo, Giovanni; Gabos, Paolo; Gemme, Claudia; Koehler, Michael; La Rosa, Alessandro; Parzefall, Ulrich; Pernegger, Heinz; Piemonte, Claudio; Povoli, Marco; Rachevskaia, Irina; Ronchin, Sabina; Wiik, Liv; Zoboli, Aanrea; Zorzi, Nicola

    2009-01-01

    We report on the electrical and functional characterization of 3D Double-side, Double-Type-Column (3D- DDTC) detectors fabricated on p-type substrates. Results relevant to detectors in the diode, strip and pixel configurations are presented, and demonstrate a clear improvement in the charge collection performance compared to the first prototypes of these detectors.

  11. Origin and evolution of metal p-Type ATPases in Plantae (Archaeplastida

    Directory of Open Access Journals (Sweden)

    Marc eHanikenne

    2014-01-01

    Full Text Available Metal ATPases are a subfamily of P-type ATPases involved in the transport of metal cations across biological membranes. They all share an architecture featuring eight transmembrane domains in pairs of two and are found in prokaryotes as well as in a variety of Eukaryotes. In Arabidopsis thaliana, eight metal P-type ATPases have been described, four being specific to copper transport and four displaying a broader metal specificity, including zinc, cadmium and possibly copper and calcium. So far, few efforts have been devoted to elucidating the origin and evolution of these proteins in Eukaryotes. In this work, we use large-scale phylogenetics to show that metal P-type ATPases form a homogenous group among P-type ATPases and that their specialisation into either monovalent (Cu or divalent (Zn, Cd… metal transport stems from a gene duplication that took place early in the evolution of Life. Then, we demonstrate that the four subgroups of plant metal ATPases all have a different evolutionary origin and a specific taxonomic distribution, only one tracing back to the cyanobacterial progenitor of the chloroplast. Finally, we examine the subsequent evolution of these proteins in green plants and conclude that the genes thoroughly characterised in model organisms are often the result of lineage-specific gene duplications, which calls for caution when attempting to infer function from sequence similarity alone in non-model organisms.

  12. Synthesis of p-type and n-type nickel ferrites and associated electrical properties

    Energy Technology Data Exchange (ETDEWEB)

    Šutka, Andris, E-mail: andris.sutka@rtu.lv [Faculty of Material Science and Applied Chemistry, Riga Technical University, Paula Valdena 3, Riga, LV-1048 (Latvia); Institute of Physics, University of Tartu, Ravila 14c, 50411, 51014 Tartu (Estonia); Pärna, Rainer [Institute of Physics, University of Tartu, Ravila 14c, 50411, 51014 Tartu (Estonia); Estonian Nanotechnology Competence Centre, Ravila 14c, 50411, 51014 Tartu (Estonia); Käämbre, Tanel [Institute of Physics, University of Tartu, Ravila 14c, 50411, 51014 Tartu (Estonia); Kisand, Vambola [Institute of Physics, University of Tartu, Ravila 14c, 50411, 51014 Tartu (Estonia); Estonian Nanotechnology Competence Centre, Ravila 14c, 50411, 51014 Tartu (Estonia)

    2015-01-01

    We used sol–gel auto combustion to synthesize nickel ferrites of p-type and n-type conductivity by controlling the relative amounts of nickel and iron during synthesis. The obtained samples have been characterized by XRD, FE-SEM, electrical measurements and XPS. We observe huge differences in the effect of grain size on the electrical resistivity between the p-type and the n-type material when the grain size increases from nano to micro scale during annealing at temperatures from 900 {sup o}C to 1300 {sup o}C. The observed resistivity decrease (due to grain size) is four orders of magnitude in the n-type nickel ferrite, whereas the p-type material remains virtually unaffected. We rationalize this drastic difference to stem from a reverse contrast of the surface (grain shell) versus bulk (grain core) conductivity between p- and n-type ferrite. With the grain shells in p-type the easier charge carrier path the effect of scatter at grain boundaries is accordingly diminished, whereas in the n-type charge transport properties are controlled by (the number of) grain boundaries in a conduction path.

  13. A structural and functional perspective of DyP-type peroxidase family.

    Science.gov (United States)

    Yoshida, Toru; Sugano, Yasushi

    2015-05-15

    Dye-decolorizing peroxidase from the basidiomycete Bjerkandera adusta Dec 1 (DyP) is a heme peroxidase. This name reflects its ability to degrade several anthraquinone dyes. The substrate specificity, the amino acid sequence, and the tertiary structure of DyP are different from those of the other heme peroxidase (super)families. Therefore, many proteins showing the similar amino acid sequences to that of DyP are called DyP-type peroxidase which is a new family of heme peroxidase identified in 2007. In fact, all structures of this family show a similar structure fold. However, this family includes many proteins whose amino acid sequence identity to DyP is lower than 15% and/or whose catalytic efficiency (kcat/Km) is a few orders of magnitude less than that of DyP. A protein showing an activity different from peroxidase activity (dechelatase activity) has been also reported. In addition, the precise physiological roles of DyP-type peroxidases are unknown. These facts raise a question of whether calling this family DyP-type peroxidase is suitable. Here, we review the differences and similarities of structure and function among this family and propose the reasonable new classification of DyP-type peroxidase family, that is, class P, I and V. In this contribution, we discuss the adequacy of this family name.

  14. Superconductivity in carrier-doped silicon carbide

    Directory of Open Access Journals (Sweden)

    Takahiro Muranaka, Yoshitake Kikuchi, Taku Yoshizawa, Naoki Shirakawa and Jun Akimitsu

    2008-01-01

    Full Text Available We report growth and characterization of heavily boron-doped 3C-SiC and 6H-SiC and Al-doped 3C-SiC. Both 3C-SiC:B and 6H-SiC:B reveal type-I superconductivity with a critical temperature Tc=1.5 K. On the other hand, Al-doped 3C-SiC (3C-SiC:Al shows type-II superconductivity with Tc=1.4 K. Both SiC:Al and SiC:B exhibit zero resistivity and diamagnetic susceptibility below Tc with effective hole-carrier concentration n higher than 1020 cm−3. We interpret the different superconducting behavior in carrier-doped p-type semiconductors SiC:Al, SiC:B, Si:B and C:B in terms of the different ionization energies of their acceptors.

  15. Doping Scheme of Semiconducting Atomic Chains

    Science.gov (United States)

    Toshishige, Yamada; Saini, Subhash (Technical Monitor)

    1998-01-01

    Atomic chains, precise structures of atomic scale created on an atomically regulated substrate surface, are candidates for future electronics. A doping scheme for intrinsic semiconducting Mg chains is considered. In order to suppress the unwanted Anderson localization and minimize the deformation of the original band shape, atomic modulation doping is considered, which is to place dopant atoms beside the chain periodically. Group I atoms are donors, and group VI or VII atoms are acceptors. As long as the lattice constant is long so that the s-p band crossing has not occurred, whether dopant atoms behave as donors or acceptors is closely related to the energy level alignment of isolated atomic levels. Band structures are calculated for Br-doped (p-type) and Cs-doped (n-type) Mg chains using the tight-binding theory with universal parameters, and it is shown that the band deformation is minimized and only the Fermi energy position is modified.

  16. Native point defects and doping in ZnGeN2

    Science.gov (United States)

    Skachkov, Dmitry; Punya Jaroenjittichai, Atchara; Huang, Ling-yi; Lambrecht, Walter R. L.

    2016-04-01

    A computational study within the framework of density functional theory in the local density approximation (LDA) is presented for native defects and doping in ZnGeN2. Gap corrections are taken into account using an LDA+U approach and finite size corrections for charged defects are evaluated in terms of an effective charge model, introduced in this paper. The donor or acceptor characteristics of each of the cation and N vacancies and the two cation antisite defects are determined as well as their energies of formation under different chemical potential conditions. These are then used to determine defect concentrations and Fermi level pinning self-consistently. The cation antisite defects are found to have significantly lower formation energy than the cation vacancies. At a typical growth temperature of 1200 K, the charge neutrality condition pins the Fermi level close to the crossing of the formation energies of the ZnGe-1 acceptor with the GeZn2 + shallow donor. Since this point lies closer to the valence-band maximum (VBM), intrinsic p -type doping would result at the growth temperature and will persist at room temperature if the defect concentrations are frozen in. It is the highest and of order 1016cm-3 for the most Ge-poor condition. On the other hand, for the most Ge-poor condition, it drops to 1013cm-3 at 1200 K and to almost zero at 300 K because then the Fermi level is too close to the middle of the gap. Oxygen impurities are found to strongly prefer the ON substitutional site and are found to be shallow donors with a very low energy of formation. It can only be suppressed by strongly reducing the oxygen partial pressure relative to that of nitrogen. At high temperatures, however, introduction of oxygen will be accompanied by compensating ZnGe-2 acceptors and would lead to negligible net doping. The prospects for Ga base p -type doping are evaluated. While good solubility is expected, site competition between Zn and Ge sites is found to lead to a

  17. Microwave characteristics of sol-gel based Ag-doped (Ba{sub 0.6}Sr{sub 0.4})TiO{sub 3} thin films

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Kyoung-Tae; Kim, Cheolbok [Department of Electrical and Computer Engineering, University of Florida, Gainesville, FL 32611 (United States); Senior, David E. [Department of Electrical and Computer Engineering, University of Florida, Gainesville, FL 32611 (United States); Department of Electrical and Electronic Engineering, Universidad Tecnológica de Bolívar Cartagena, 130011 Colombia (Colombia); Kim, Dongsu [Packaging Research Center, Korea Electronics Technology Institute, Gyeonggi-do, 463-816 (Korea, Republic of); Yoon, Yong-Kyu, E-mail: ykyoon@ece.ufl.edu [Department of Electrical and Computer Engineering, University of Florida, Gainesville, FL 32611 (United States)

    2014-08-28

    Dielectric Ba{sub 0.6}Sr{sub 0.4}TiO{sub 3} (BST) thin films with a different concentration of Ag-dopant of 0.5, 1, 1.5, 2, 3, and 5 mol % have been prepared using an alkoxide-based sol-gel method on a Pt(111)/TiO{sub 2}/SiO{sub 2}/Si substrate and their surface morphology and crystallinity have been examined using scanning electron microscopy (SEM) and X-ray diffraction (XRD) analysis, respectively. An on-chip metal-insulator-metal capacitor has been fabricated with the prepared thin film ferroelectric sample. Concentric coplanar electrodes are used for high frequency electrical characterization with a vector network analyzer and a probe station. The SEM images show that increasing Ag doping concentration leads to a decrease in grain size. XRD reveals that the fabricated films show good BST crystallinity for all the concentration while a doping concentration of 5 mol % starts to show an Ag peak, implying a metallic phase. Improved microwave dielectric loss properties of the BST thin films are observed in a low Ag doping level. Especially, BST with an Ag doping concentration of 1 mol % shows the best properties with a dielectric constant of 269.3, a quality factor of 48.1, a tunability at the electric field of 100 kV/cm of 41.2 %, a leakage-current density of 1.045 × 10{sup −7}A/cm{sup 2} at an electric field of 100 kV/cm and a figure of merit (defined by tunability (%) divided by tan δ (%)) of 19.59 under a dc bias voltage of 10 V at 1 GHz. - Highlights: • High quality Ag-doped Ba{sub 0.6}Sr{sub 0.4}TiO{sub 3} (BST) thin films were derived by the sol-gel method. • Doped Ag replaced the A site ions in the ABO{sub 3} type structure. • Doped Ag helped lower leakage current by filling oxygen vacancies, which is a leakage path. • Microwave characteristics of low dielectric loss and good tunability were confirmed. • Great potential is envisioned for low loss tunable microwave applications.

  18. CoGeNT: A Search for Low-Mass Dark Matter using p-type Point Contact Germanium Detectors

    CERN Document Server

    Aalseth, C E; Colaresi, J; Collar, J I; Leon, J Diaz; Fast, J E; Fields, N E; Hossbach, T W; Knecht, A; Kos, M S; Marino, M G; Miley, H S; Miller, M L; Orrell, J L; Yocum, K M

    2013-01-01

    CoGeNT employs p-type point-contact (PPC) germanium detectors to search for Weakly Interacting Massive Particles (WIMPs). By virtue of its low energy threshold and ability to reject surface backgrounds, this type of device allows an emphasis on low-mass dark matter candidates (WIMP mass around 10 GeV/c2). We report on the characteristics of the PPC detector presently taking data at the Soudan Underground Laboratory, elaborating on aspects of shielding, data acquisition, instrumental stability, data analysis, and background estimation. A detailed background model is used to investigate the low energy excess of events previously reported, and to assess the possibility of temporal modulations in the low-energy event rate. We conclude that the technique is ideally suited to search for the annual modulation signature expected from dark matter particle interactions in the region of WIMP mass and coupling favored by the DAMA/LIBRA claim.

  19. Photocatalysis Characteristics of Y2O3 Doped TiO2%Y2O3掺杂的TiO2的自然光催化降解性能研究

    Institute of Scientific and Technical Information of China (English)

    雅菁; 贾堤; 刘云兆; 陈玉如

    2000-01-01

      采用溶胶-凝胶法,通过在TiO2中掺杂氧化钇,在太阳光的照射下进行染料溶液的光催化降解。结果表明,Y2O3掺杂TiO2的自然光催化活性显著高于未掺杂TiO2,与未掺杂TiO2在紫外灯下的催化活性相当。%  TiO2 and Y2O3 doped TiO2 thin films were prepared by sol-gel method and their solar ray photocatalysis characteristics were examined. The results show that the photocatalytic activities of Y2O3 doped TiO2 thin films are higher than that of TiO2 thin films.

  20. Hole transport in pure and doped hematite

    Science.gov (United States)

    Liao, Peilin; Carter, Emily A.

    2012-07-01

    Hematite (α-Fe2O3) is a promising candidate for use in photovoltaic (PV) and photoelectrochemical devices. Its poor conductivity is one major drawback. Doping hematite either p-type or n-type greatly enhances its measured conductivity and is required for potential p-n junctions in PVs. Here, we study hole transport in pure and doped hematite using an electrostatically embedded cluster model with ab initio quantum mechanics (unrestricted Hartree-Fock theory). Consistent with previous work, the model suggests that hole hopping is via oxygen anions for pure hematite. The activation energy for hole mobility is predicted to be at least 0.1 eV higher than the activation energy for electron mobility, consistent with the trend observed in experiments. We examine four dopants—magnesium(II), nickel(II), copper(II), and manganese(II/III) in direct cation substitution sites—to gain insight into the mechanism by which conductivity is improved. The activation energies are used to assess qualitative effects of different dopants. The hole carriers are predicted to be attracted to O anions near the dopants. The magnitude of the trapping effect is similar among the four dopants in their +2 oxidation states. The multivalent character of Mn doping facilitates local hole transport around Mn centers via a low-barrier O-Mn-O pathway, which suggests that higher hole mobility can be achieved with increasing Mn doping concentration, especially when a network of these low-barrier pathways is produced. Our results suggest that the experimentally observed conductivity increase in Mg-, Ni-, and Cu-doped p-type hematite is mostly due to an increase in hole carriers rather than improved mobility, and that Mg-, Ni-, and Cu-doping perform similarly, while the conductivity of Mn-doped hematite might be significantly improved in the high doping concentration limit.

  1. Origin of Photovoltage Enhancement via Interfacial Modification with Silver Nanoparticles Embedded in an a-SiC:H p-Type Layer in a-Si:H Solar Cells.

    Science.gov (United States)

    Li, Tiantian; Zhang, Qixing; Ni, Jian; Huang, Qian; Zhang, Dekun; Li, Baozhang; Wei, Changchun; Yan, Baojie; Zhao, Ying; Zhang, Xiaodan

    2017-03-17

    We used silver nanoparticles (Ag-NPs) embedded in the p-type semiconductor layer of hydrogenated amorphous silicon (a-Si:H) solar cells in the Schottky barrier contact design to modify the interface between aluminum-doped ZnO (ZnO:Al, AZO) and p-type hydrogenated amorphous silicon carbide (p-a-SiC:H) without plasmonic absorption. The high work function of the Ag-NPs provided a good channel for the transport of photogenerated holes. A p-type nanocrystalline SiC:H layer was used to compensate for the real surface defects and voids on the surface of Ag-NPs to reduce recombination at the AZO/p-type layer interface, which then enhanced the photovoltage of single-junction a-Si:H solar cells to values as high as 1.01 V. The Ag-NPs were around 10 nm in diameter and thermally stable in the p-type a-SiC:H film at the solar-cell process temperature. We will also show that a wide range of photovoltages between 1.01 and 2.89 V could be obtained with single-, double-, and triple-junction solar cells based on the single-junction a-Si:H solar cells with tunable high photovoltage. These solar cells are suitable photocathodes for solar water-splitting applications.

  2. Enhanced Electrorheological Performance of Nb-Doped TiO2 Microspheres Based Suspensions and Their Behavior Characteristics in Low-Frequency Dielectric Spectroscopy.

    Science.gov (United States)

    Guo, Xiaosong; Chen, Yulu; Su, Ming; Li, Dong; Li, Guicun; Li, Chengdong; Tian, Yu; Hao, Chuncheng; Lei, Qingquan

    2015-12-09

    Titanium dioxide and Nb-doped titanium dioxide microspheres with the same size were fabricated by a simple sol-gel method, and the formation mechanism of Nb-doped titanium dioxide microspheres was proposed. Titanium dioxide and Nb-doped titanium dioxide microspheres were adopted as dispersed materials for electrorheological (ER) fluids to investigate the influence of the charge increase introduced by Nb doping on the ER activity. The results showed that Nb doping could effectively enhance the ER performance. Combining with the analysis of dielectric spectroscopy, it was found that the interface polarization of Nb-doped TiO2 ER fluid was larger than that of TiO2 ER fluid, which might be caused by more surface charges in Nb-TiO2 microspheres due to Nb(5+) doping and resulting in enhancement of electric field force and strengthening of fibrous structure. In addition, by comparing and analyzing the permittivity curves of Nb-TiO2/LDPE solid composite and Nb-TiO2/silicone-oil fluid composite, it could be concluded that the enhancement of permittivity at low frequency resulted from the increase of the order degree of dispersed particles in ER fluid rather than from the quasi-dc (QDC) behavior. Moreover, the absolute value of slope of permittivity curves (K) at 0.01 Hz could be utilized as the standard for judging the ability to maintain the chainlike structure. The relationships between polarizability of dispersed particles, dielectric spectrum, parameter K, and ER properties were discussed in detail.

  3. Minority carrier lifetimes in different doped LWIR HgCdTe grown by LPE

    Science.gov (United States)

    Qiu, GuangYin; Wei, YanFeng; Sun, QuanZhi; Yang, JianRong

    2012-10-01

    The carrier lifetimes of different types of p-type doped HgCdTe(x~0.23) long wavelength infrared (LWIR) epilayers were measured which were Hg-vacancy, Au and arsenic doped ones prepared by Te-rich Liquid-phase epitaxy (LPE). By comparing the lifetimes of Hg-vacancy and extrinsic doped HgCdTe, we focus on three primary mechanisms limiting the lifetimes in these different p-type HgCdTe samples: radiative recombination, Auger recombination and Schokley-Read- Hall (SRH) Recombination. The recombination mechanism in p-type HgCdTe is the SRH recombination at low temperatures and Auger and radiative recombination at high temperature. It is found that the lifetime of As-doped and Au-doped HgCdTe is far longer than that of Hg-vacancy-doped sample which is caused by the deep energy level of the Hg-vacancy acceptor that is considered as a recombination center in HgCdTe. Also we found lifetime in those p-type doped HgCdTe LWIR epilayers is limited by SRH by comparing the experimental lifetimes with the calculated data. Impurity doping was found to have a main effect on minority carrier lifetime.

  4. Organic light emitting diodes with environmentally and thermally stable doped graphene electrodes

    DEFF Research Database (Denmark)

    Kuruvila, Arun; Kidambi, Piran R.; Kling, Jens

    2014-01-01

    We present a comparative study of the environmental and thermal stability of graphene charge transfer doping using molybdenum– trioxide (MoO3), vanadium–pentoxide (V2O5) and tungsten–trioxide (WO3). Our results show that all these metal oxides allow a strong and stable p-type doping of graphene...

  5. ZnO-based semiconductors studied by Raman spectroscopy. Semimagnetic alloying, doping, and nanostructures

    Energy Technology Data Exchange (ETDEWEB)

    Schumm, Marcel

    2009-07-01

    ZnO-based semiconductors were studied by Raman spectroscopy and complementary methods (e.g. XRD, EPS) with focus on semimagnetic alloying with transition metal ions, doping (especially p-type doping with nitrogen as acceptor), and nanostructures (especially wet-chemically synthesized nanoparticles). (orig.)

  6. Effects of Germanium on Movement of Dislocations in p-Type Czochralski Silicon

    Institute of Scientific and Technical Information of China (English)

    2006-01-01

    By indentation at room temperature followed by annealing at high temperatures, the pinning effect of germanium on dislocations in germanium-doped Czochralski silicon was investigated. Experimental results show that the dislocations in germanium-doped Czochralski silicon move shorter and slower than those in Czochralski silicon undoping with germanium when the concentration of germanium is over 1×1018 cm-3. The retarding velocity of dislocations is contributed to the dislocations pinning effect of the strain field introduced by the high concentration germanium, and the Ge4B cluster and the oxygen precipitation those are preferred to form at higher concentration germanium.

  7. Low specific contact resistance on epitaxial p-type 4H-SiC with a step-bunching surface

    Science.gov (United States)

    Han, Chao; Zhang, Yu-Ming; Song, Qing-Wen; Tang, Xiao-Yan; Zhang, Yi-Men; Guo, Hui; Wang, Yue-Hu

    2015-11-01

    This paper reports the performances of Ti/Al based ohmic contacts fabricated on highly doped p-type 4H-SiC epitaxial layer which has a severe step-bunching surface. Different contact schemes are investigated based on the Al:Ti composition with no more than 50 at.% Al. The specific contact resistance (SCR) is obtained to be as low as 2.6 × 10-6 Ω·cm2 for the bilayered Ti(100 nm)/Al(100 nm) contact treated with 3 min rapid thermal annealing (RTA) at 1000 °C. The microstructure analyses examined by physical and chemical characterization techniques reveal an alloy-assisted ohmic contact formation mechanism, i.e., a high degree of alloying plays a decisive role in forming the interfacial ternary Ti3SiC2 dominating the ohmic behavior of the Ti/Al based contact. Furthermore, a globally covered Ti3SiC2 layer with (0001)-oriented texture can be formed, regardless of the surface step bunching as well as its structural evolution during the metallization annealing. Project supported by the Key Specific Projects of Ministry of Education of China (Grant No. 625010101), the National Natural Science Foundation of China (Grant No. 61234006), the Natural Science Foundation of ShaanXi Province, China (Grant No. 2013JQ8012), the Doctoral Fund of Ministry of Education of China (Grant No. 20130203120017), and the Specific Project of the Core Devices, China (Grant No. 2013ZX0100100-004).

  8. Influence of growth temperature on the electrical and structural characteristics of conductive Al-doped ZnO thin films grown by atomic layer deposition

    Energy Technology Data Exchange (ETDEWEB)

    Ahn, Cheol Hyoun [School of Advanced Materials Science and Engineering, Sungkyunkwan University, 2066 Seobu-ro, Jangan-gu, Suwon, Gyeonggi-do (Korea, Republic of); Lee, Sang Yeol, E-mail: sylee@cju.ac.kr [Department of Semiconductor Engineering, Cheongju University, Cheongju, Chungbuk, 360-764 (Korea, Republic of); Cho, Hyung Koun, E-mail: chohk@skku.edu [School of Advanced Materials Science and Engineering, Sungkyunkwan University, 2066 Seobu-ro, Jangan-gu, Suwon, Gyeonggi-do (Korea, Republic of)

    2013-10-31

    Al-doped ZnO thin films (AZO) were deposited by atomic layer deposition at various temperatures (100–300 °C) with a frequency ratio of 19/1 (Zn–O/Al–O), and their properties were evaluated. With increasing growth temperature, the Al contents in the AZO thin films were continuously increased, because of the rapid increase in the incorporation efficiency of the Al–O layer with respect to the Zn–O layer. Although low-temperature deposition resulted in the abnormal [100]-preferred orientation of the AZO films, they had a high carrier density of ∼ 10{sup 20} cm{sup 3}. However, the Hall mobility showed a low value of 1.5 cm{sup 2}/Vs due to the high density of impurities such as C–O or O–H caused by incomplete reaction for precursors. In contrast, the electrical and structural properties of the AZO thin films were enhanced by increasing growth temperature, due to the increased Al doping level and reduced residual impurities, which was confirmed by X-ray diffraction and X-ray photoelectron spectroscopy. - Highlights: • Dependency of growth temperature on characterization of Al-doped ZnO • The preferred orientation was attributed to the chemical reactions of precursors • The residual impurities were reduced with increased growth temperature • The Al doping efficiency was enhanced with increasing growth temperature • Conductivity was enhanced with higher doping efficiency in high growth temperature.

  9. Effective field theory and Ab-initio calculation of p-type (Ga, Fe)N within LDA and SIC approximation

    Science.gov (United States)

    Salmani, E.; Mounkachi, O.; Ez-Zahraouy, H.; El Kenz, A.; Hamedoun, M.; Benyoussef, A.

    2013-03-01

    Based on first-principles spin-density functional calculations, using the Korringa-Kohn-Rostoker method combined with the coherent potential approximation, we investigated the half-metallic ferromagnetic behavior of (Ga, Fe)N co-doped with carbon within the self-interaction-corrected local density approximation. Mechanism of hybridization and interaction between magnetic ions in p-type (Ga, Fe)N is investigated. Stability energy of ferromagnetic and disorder local moment states was calculated for different carbon concentration. The local density and the self-interaction-corrected approximations have been used to explain the strong ferromagnetic interaction observed and the mechanism that stabilizes this state. The transition temperature to the ferromagnetic state has been calculated within the effective field theory, with a Honmura-Kaneyoshi differential operator technique.

  10. Enhancement of p-type mobility in tin monoxide by native defects

    KAUST Repository

    Granato, D. B.

    2013-05-31

    Transparent p-type materials with good mobility are needed to build completely transparent p-n junctions. Tin monoxide (SnO) is a promising candidate. A recent study indicates great enhancement of the hole mobility of SnO grown in Sn-rich environment [E. Fortunato et al., Appl. Phys. Lett. 97, 052105 (2010)]. Because such an environment makes the formation of defects very likely, we study defect effects on the electronic structure to explain the increased mobility. We find that Sn interstitials and O vacancies modify the valence band, inducing higher contributions of the delocalized Sn 5p orbitals as compared to the localized O 2p orbitals, thus increasing the mobility. This mechanism of valence band modification paves the way to a systematic improvement of transparent p-type semiconductors.

  11. Efficiency Improvement of HIT Solar Cells on p-Type Si Wafers

    Directory of Open Access Journals (Sweden)

    Chun-You Wei

    2013-11-01

    Full Text Available Single crystal silicon solar cells are still predominant in the market due to the abundance of silicon on earth and their acceptable efficiency. Different solar-cell structures of single crystalline Si have been investigated to boost efficiency; the heterojunction with intrinsic thin layer (HIT structure is currently the leading technology. The record efficiency values of state-of-the art HIT solar cells have always been based on n-type single-crystalline Si wafers. Improving the efficiency of cells based on p-type single-crystalline Si wafers could provide broader options for the development of HIT solar cells. In this study, we varied the thickness of intrinsic hydrogenated amorphous Si layer to improve the efficiency of HIT solar cells on p-type Si wafers.

  12. Comment on 'Electronic Properties of Red P-Type T12S5 Single Crystals'

    Institute of Scientific and Technical Information of China (English)

    M. Cankurtaran; H. (C)elik

    2007-01-01

    Recently, Gamal et al. [Chin. Phys. Lett. 22 (2005) 1530] reported the results of electrical conductivity, Hall effect and thermoelectric measurements on p-type Th2S5 single crystals. From the experimental data for the temperature dependence of differential thermoelectric power, Gamal et al. determined the values of 2.66 × 10-41 kg and 2.50 × 10-41 kg, respectively, for the effective masses of electrons and holes in p-type Tl2S5, which are about ten orders of magnitude smaller than the free electron mass (9.11 × 10-31 kg). We argue that the anomalously small values obtained for the effective mass of charge carriers in Tl2S5 have no physical significance.

  13. An integrated driving circuit implemented with p-type LTPS TFTs for AMOLED

    Institute of Scientific and Technical Information of China (English)

    ZHAO Li-qing; WU Chun-ya; HAO Da-shou; YAO Ying; MENG Zhi-guo; XIONG Shao-zhen

    2009-01-01

    Based on the technology of low temperature poly silicon thin film transistors (poly-Si-TFTs), a novel p-type TFT AMOLED panel with self-scanned driving circuit is introduced in this paper. A shift register formed with novel p-type TFTs is pro-posed to realize the gate driver. A flip-latch cooperated with the shift register is designed to conduct the data writing. In order to verify the validity of the proposed design, the circuits are simulated with SILVACO TCAD tools, using the MODEL in which the parameters of LTPS TFTs were extracted from the LTPS TFTs made in our lab. The simulation results indicate that the circuit can fulfill the driving function.

  14. Measurement of the dead layer thickness in a p-type point contact germanium detector

    Science.gov (United States)

    Jiang, Hao; Yue, Qian; Li, Yu-Lan; Kang, Ke-Jun; Li, Yuan-Jing; Li, Jin; Lin, Shin-Ted; Liu, Shu-Kui; Ma, Hao; Ma, Jing-Lu; Su, Jian; Tsz-King Wong, Henry; Yang, Li-Tao; Zhao, Wei; Zeng, Zhi

    2016-09-01

    A 994 g mass p-type PCGe detector has been deployed during the first phase of the China Dark matter EXperiment, aiming at direct searches for light weakly interacting massive particles. Measuring the thickness of the dead layer of a p-type germanium detector is an issue of major importance since it determines the fiducial mass of the detector. This work reports a method using an uncollimated 133Ba source to determine the dead layer thickness. The experimental design, data analysis and Monte Carlo simulation processes, as well as the statistical and systematic uncertainties are described. A dead layer thickness of 1.02 mm was obtained based on a comparison between the experimental data and the simulated results. Supported by National Natural Science Foundation of China (10935005, 10945002, 11275107, 11175099)

  15. Preparation and Photovoltaic Properties of p-Type Nano-ZnFe2O4

    Institute of Scientific and Technical Information of China (English)

    LI Zi-heng; ZOU Xu; LI Gen; ZOU Guang-tian

    2012-01-01

    p-Type nano-ZnFe2O4 semiconductors were gained by high-prssure treatment.Surface photovoltaic spectrum(SPS) and transient photovoltaic technology(TPV) were used for studying the photogenerated charge of nano-ZnFe2O4.Results show that the photovoltaic behavior of nano-ZnFe2O4 changed as the processing pressure increased.When the processing pressure was higher than 2 GPa,both SPS response interval and peak changed significantly.XPS results show that the non-lattice oxygen entered into the lattice and the content of lattice oxygen increased with the increase of processing pressure.The material changed from oxygen vacancy type to oxygen excess type and the photoelectric properties changed from n-type to p-type when the processing pressure is higher than 2GPa.

  16. In and out of the cation pumps: P-type ATPase structure revisited

    DEFF Research Database (Denmark)

    Bublitz, Maike; Poulsen, Hanne; Morth, Jens Preben

    2010-01-01

    Active transport across membranes is a crucial requirement for life. P-type ATPases build up electrochemical gradients at the expense of ATP by forming and splitting a covalent phosphoenzyme intermediate, coupled to conformational changes in the transmembrane section where the ions are translocated....... The marked increment during the last three years in the number of crystal structures of P-type ATPases has greatly improved our understanding of the similarities and differences of pumps with different ion specificities, since the structures of the Ca2+-ATPase, the Na+,K+-ATPase and the H+-ATPase can now...... be compared directly. Mechanisms for ion gating, charge neutralization and backflow prevention are starting to emerge from comparative structural analysis; and in combination with functional studies of mutated pumps this provides a framework for speculating on how the ions are bound and released as well...

  17. Perspectives of High-Temperature Thermoelectric Applications and p-type and n-type Aluminoborides

    Science.gov (United States)

    Mori, T.

    2016-10-01

    A need exists to develop high-temperature thermoelectric materials which can utilize high-temperature unutilized/waste heat in thermal power plants, steelworks, factories, incinerators, etc., and also focused solar power. The thermal power plant topping application is of potential high impact since it can sizably increase the efficiency of power plants which are the major supply of electrical power for many countries. Higher borides are possible candidates for their particular high-temperature stability, generally large Seebeck coefficients, α, and intrinsic low thermal conductivity. Excellent (|α| > 200 μV/K) p-type or n-type behavior was recently achieved in the aluminoboride YAl x B14 by varying the occupancy of Al sites, x. Finding p-type and n-type counterparts has long been a difficulty of thermoelectric research not limited to borides. This paper reviews possible high-temperature thermoelectric applications, and recent developments and perspectives of thermoelectric aluminoborides.

  18. CALCULATING THE HABITABLE ZONE OF BINARY STAR SYSTEMS. II. P-TYPE BINARIES

    Energy Technology Data Exchange (ETDEWEB)

    Haghighipour, Nader [Institute for Astronomy and NASA Astrobiology Institute, University of Hawaii-Manoa, Honolulu, HI 96822 (United States); Kaltenegger, Lisa [MPIA, Koenigstuhl 17, Heidelberg, D-69117 (Germany)

    2013-11-10

    We have developed a comprehensive methodology for calculating the circumbinary habitable zone (HZ) in planet-hosting P-type binary star systems. We present a general formalism for determining the contribution of each star of the binary to the total flux received at the top of the atmosphere of an Earth-like planet and use the Sun's HZ to calculate the inner and outer boundaries of the HZ around a binary star system. We apply our calculations to the Kepler's currently known circumbinary planetary systems and show the combined stellar flux that determines the boundaries of their HZs. We also show that the HZ in P-type systems is dynamic and, depending on the luminosity of the binary stars, their spectral types, and the binary eccentricity, its boundaries vary as the stars of the binary undergo their orbital motion. We present the details of our calculations and discuss the implications of the results.

  19. Sensitization of p-type NiO using n-type conducting polymers

    NARCIS (Netherlands)

    Chavhan, S.D.; Abellon, R.D.; Breemen, A.J.J.M. van; Koetse, M.M.; Sweelssen, J.; Savenije, T.J.

    2010-01-01

    We report on the sensitization of a p-type inorganic semiconductor, NiO, by n-type conjugated polymers. NiO thin films were deposited using RF sputtering in pure Ar (NiO A) or in Ar + O2 (90% + 10%) (NiO B). XPS and Kelvin probe measurements indicate the incorporation of oxygen in NiO B

  20. Sensitization of p-type NiO using n-type conducting polymers

    NARCIS (Netherlands)

    Chavhan, S.D.; Abellon, R.D.; Breemen, A.J.J.M. van; Koetse, M.M.; Sweelssen, J.; Savenije, T.J.

    2010-01-01

    We report on the sensitization of a p-type inorganic semiconductor, NiO, by n-type conjugated polymers. NiO thin films were deposited using RF sputtering in pure Ar (NiO A) or in Ar + O2 (90% + 10%) (NiO B). XPS and Kelvin probe measurements indicate the incorporation of oxygen in NiO B l

  1. Investigation of negative photoconductivity in p-type Pb1-xSnxTe film

    Science.gov (United States)

    Tavares, M. A. B.; da Silva, M. J.; Peres, M. L.; de Castro, S.; Soares, D. A. W.; Okazaki, A. K.; Fornari, C. I.; Rappl, P. H. O.; Abramof, E.

    2017-01-01

    We investigated the negative photoconductivity (NPC) effect that was observed in a p-type Pb1-xSnxTe film for temperatures varying from 300 K down to 85 K. We found that this effect is a consequence of defect states located in the bandgap which act as trapping levels, changing the relation between generation and recombination rates. Theoretical calculations predict contributions to the NPC from both conduction and valence bands, which are in accordance with the experimental observations.

  2. Sensitization of p-type NiO using n-type conducting polymers

    NARCIS (Netherlands)

    Chavhan, S.D.; Abellon, R.D.; Breemen, A.J.J.M. van; Koetse, M.M.; Sweelssen, J.; Savenije, T.J.

    2010-01-01

    We report on the sensitization of a p-type inorganic semiconductor, NiO, by n-type conjugated polymers. NiO thin films were deposited using RF sputtering in pure Ar (NiO A) or in Ar + O2 (90% + 10%) (NiO B). XPS and Kelvin probe measurements indicate the incorporation of oxygen in NiO B l

  3. Radiation damage studies of multi-guard ring p-type bulk diodes

    CERN Document Server

    Bortoletto, D; Günther, M; Grim, G P; Lander, R L; Willard, S; Li, Z

    1999-01-01

    Several diodes with different multi-guard ring structures were fabricated from 10 k OMEGA cm p-type bulk material. Studies on the performance of such devices are presented here. They include the measurement of the leakage current, breakdown voltage and charge collection efficiency before and after 2x10 sup 1 sup 4 p/cm sup 2 irradiation with 63.3 MeV kinetic protons. (author)

  4. Kinetics of self-interstitials reactions in p-type silicon irradiated with alpha particles

    Energy Technology Data Exchange (ETDEWEB)

    Makarenko, L.F., E-mail: makarenko@bsu.by [Department of Applied Mathematics and Computer Science, Belarusian State University, Independence Ave. 4, 220030 Minsk (Belarus); Moll, M. [CERN, Geneva (Switzerland); Evans-Freeman, J.H. [University of Canterbury, Christchurch (New Zealand); Lastovski, S.B.; Murin, L.I.; Korshunov, F.P. [Scientific-Practical Materials Research Centre of NAS of Belarus, Minsk (Belarus)

    2012-08-01

    New findings on the self-interstitial migration in p-type silicon are presented. They are based on experimental studies of the formation kinetics of defects related to interstitial carbon after irradiation with alpha particles. The main parameters characterizing the interaction rate of silicon self-interstitials with substitutional carbon atoms have been determined. A preliminary interpretation of the experimental data is given. The interpretation takes into account different diffusivities of self-interstitials in their singly and doubly ionized states.

  5. Record mobility in transparent p-type tin monoxide films and devices by phase engineering

    KAUST Repository

    Caraveo-Frescas, Jesus Alfonso

    2013-06-25

    Here, we report the fabrication of nanoscale (15 nm) fully transparent p-type SnO thin film transistors (TFT) at temperatures as low as 180 C with record device performance. Specifically, by carefully controlling the process conditions, we have developed SnO thin films with a Hall mobility of 18.71 cm2 V-1 s-1 and fabricated TFT devices with a linear field-effect mobility of 6.75 cm2 V-1 s -1 and 5.87 cm2 V-1 s-1 on transparent rigid and translucent flexible substrates, respectively. These values of mobility are the highest reported to date for any p-type oxide processed at this low temperature. We further demonstrate that this high mobility is realized by careful phase engineering. Specifically, we show that phase-pure SnO is not necessarily the highest mobility phase; instead, well-controlled amounts of residual metallic tin are shown to substantially increase the hole mobility. A detailed phase stability map for physical vapor deposition of nanoscale SnO is constructed for the first time for this p-type oxide. © 2013 American Chemical Society.

  6. Demethoxycurcumin Is A Potent Inhibitor of P-Type ATPases from Diverse Kingdoms of Life.

    Science.gov (United States)

    Dao, Trong Tuan; Sehgal, Pankaj; Tung, Truong Thanh; Møller, Jesper Vuust; Nielsen, John; Palmgren, Michael; Christensen, Søren Brøgger; Fuglsang, Anja Thoe

    2016-01-01

    P-type ATPases catalyze the active transport of cations and phospholipids across biological membranes. Members of this large family are involved in a range of fundamental cellular processes. To date, a substantial number of P-type ATPase inhibitors have been characterized, some of which are used as drugs. In this work a library of natural compounds was screened and we first identified curcuminoids as plasma membrane H+-ATPases inhibitors in plant and fungal cells. We also found that some of the commercial curcumins contain several curcuminoids. Three of these were purified and, among the curcuminoids, demethoxycurcumin was the most potent inhibitor of all tested P-type ATPases from fungal (Pma1p; H+-ATPase), plant (AHA2; H+-ATPase) and animal (SERCA; Ca2+-ATPase) cells. All three curcuminoids acted as non-competitive antagonist to ATP and hence may bind to a highly conserved allosteric site of these pumps. Future research on biological effects of commercial preparations of curcumin should consider the heterogeneity of the material.

  7. p-Type Quasi-Mono Silicon Solar Cell Fabricated by Ion Implantation

    Directory of Open Access Journals (Sweden)

    Chien-Ming Lee

    2013-01-01

    Full Text Available The p-type quasi-mono wafer is a novel type of silicon material that is processed using a seed directional solidification technique. This material is a promising alternative to traditional high-cost Czochralski (CZ and float-zone (FZ material. Here, we evaluate the application of an advanced solar cell process featuring a novel method of ion implantation on p-type quasi-mono silicon wafer. The ion implantation process has simplified the normal industrial process flow by eliminating two process steps: the removal of phosphosilicate glass (PSG and the junction isolation process that is required after the conventional thermal POCl3 diffusion process. Moreover, the good passivation performance of the ion implantation process improves Voc. Our results show that, after metallization and cofiring, an average cell efficiency of 18.55% can be achieved using 156 × 156 mm p-type quasi-mono silicon wafer. Furthermore, the absolute cell efficiency obtained using this method is 0.47% higher than that for the traditional POCl3 diffusion process.

  8. Enhanced thermopower and low thermal conductivity in p-type polycrystalline ZrTe5

    Science.gov (United States)

    Hooda, M. K.; Yadav, C. S.

    2017-07-01

    Thermoelectric properties of polycrystalline p-type ZrTe5 are reported in the temperature (T) range of 2-340 K. Thermoelectric power (S) is positive and reaches up to 458 μV/K at 340 K on increasing T. The value of Fermi energy 16 meV suggests a low carrier density of ≈9.5 × 1018 cm-3. A sharp anomaly in S data is observed at 38 K, which seems intrinsic to p-type ZrTe5. The thermal conductivity (κ) value is low (2 W/m K at T = 300 K) with major contribution from the lattice part. Electrical resistivity data show the metal to semiconductor transition at T ˜ 150 K and non-Arrhenius behavior in the semiconducting region. The figure of merit zT (0.026 at T = 300 K) is ˜63% higher than that of HfTe5 (0.016) and better than those of the conventional SnTe, p-type PbTe, and bipolar pristine ZrTe5 compounds.

  9. Efficient synthesis of triarylamine-based dyes for p-type dye-sensitized solar cells

    Science.gov (United States)

    Wild, Martin; Griebel, Jan; Hajduk, Anna; Friedrich, Dirk; Stark, Annegret; Abel, Bernd; Siefermann, Katrin R.

    2016-05-01

    The class of triarylamine-based dyes has proven great potential as efficient light absorbers in inverse (p-type) dye sensitized solar cells (DSSCs). However, detailed investigation and further improvement of p-type DSSCs is strongly hindered by the fact that available synthesis routes of triarylamine-based dyes are inefficient and particularly demanding with regard to time and costs. Here, we report on an efficient synthesis strategy for triarylamine-based dyes for p-type DSSCs. A protocol for the synthesis of the dye-precursor (4-(bis(4-bromophenyl)amino)benzoic acid) is presented along with its X-ray crystal structure. The dye precursor is obtained from the commercially available 4(diphenylamino)benzaldehyde in a yield of 87% and serves as a starting point for the synthesis of various triarylamine-based dyes. Starting from the precursor we further describe a synthesis protocol for the dye 4-{bis[4‧-(2,2-dicyanovinyl)-[1,1‧-biphenyl]-4-yl]amino}benzoic acid (also known as dye P4) in a yield of 74%. All synthesis steps are characterized by high yields and high purities without the need for laborious purification steps and thus fulfill essential requirements for scale-up.

  10. Current-voltage characteristics with several threshold currents in insulating low-doped La1-xSrxMnO3 (x=0.10) thin films

    Institute of Scientific and Technical Information of China (English)

    ZHAO Kun; FENG Jiafeng; HE Meng; L(U) Huibin; JIN Kuijuan; ZHOU Yueliang; YANG Guozhen3

    2008-01-01

    The current-induced resistive switching behavior in the micron-scale pillars of low-doped La0.9Sr0.1MnO3 thin films using laser molecular-beam epitaxy was reported. It was demonstrated that the current-voltage curves at 120 K showed hysteresis with several threshold currents corresponding to the switching in resistance to metastable low resistance states, and finally, four closed loops were formed. A mode was proposed, which was based on the low-temperature canted antiferromagnetism ordering for a lightly doped insulating regime.

  11. Optical and electrical characteristics of chromium- and iron-doped zinc selenide thin film and bulk materials for optically and electrically pumped lasers

    Science.gov (United States)

    Gallian, Andrew

    This work is devoted to evaluating new laser systems based upon chromium and iron doped ZnSe structures. These systems are based upon new materials and pumping schemes. These topics can be broken down into three major subgroups: new materials based upon Cr2+:ZnSe, Fe2+:ZnSe lasers and pump sources, and electrically pumped Cr2+:ZnSe systems. Both hot-pressed ceramic and thin film Cr2+:ZnSe samples were evaluated for their potential as laser gain media. This work entailed spectroscopic analysis of both their absorption and emission spectra as well as characterizing their lifetime of luminescence. For hot-pressed ceramic Cr2+:ZnSe the samples were tested in a laser cavity and proven to be the first laser system in the mid-IR to be demonstrated based upon hot-pressed Cr2+:ZnSe. Thin film Cr2+:ZnSe was determined to have different spectroscopic characteristics for luminescence compared to reference bulk samples. This difference is attributed to the location of all of the optical centers within a Fabry-Perot cavity formed by the film surface and the wafer on which it was deposited. Fe2+:ZnSe laser demonstration at room temperature is presented. This laser operates in a spectral region of great interest for spectroscopy. To develop this laser system new pumping systems were required. Such systems as passively Q-switched Er:YSGG and Stokes Stimulated Raman Scattering from a D2 cell are described in great depth. Electrically pumped Transition Metal 2+:II-VI systems are ideal for small portable spectroscopic and scientific tools. The elimination of an optical pump source removes many complications of other systems including, complications due to having a second laser. This work was approached by modeling electrically motivated transitions with sub-band optical excitation. Lasing of Cr 2+:ZnSe was achieved using a 532 nm pump source. This result, in combination with photo-current and photo-Hall measurements, led to the development of some theories explaining possible

  12. Observation of As-Grown Defects in Zn-Doped GaAs by Positron Lifetime Spectra

    Institute of Scientific and Technical Information of China (English)

    WANG Zhu; WANG Shao-Jie; CHEN Zhi-Quan

    2000-01-01

    Positron lifetime spectra were measured for the Zn-doped p-type GaAs. In comparing the horizontal-Bridgman-method-grown and the floating-zone-method grown p-type GaAs with the liquid-encapsulation-Czochvalski-grown p-type GaAs samples, positron trapping into vacancy type defects was observed in the former two grown p-type GaAs. Shallow positron traps were detected, and the dominant ones were attributed to acceptor the in p-type GaAs.

  13. Effects of Mg Doping on Photoconductivity of GaN Films

    Institute of Scientific and Technical Information of China (English)

    Deheng ZHANG; Qingpu WANG; Yunyan LIU

    2003-01-01

    This paper presents the UV photoconductivity properties of GaN films doped with different Mg concentrations deposited by MOCVD. It was observed that for the undoped and weakly doped GaN films the UV photocurrent response was relatively large and the relax time was relatively short. With an increase in doped Mg content, the samples became p-type, the photocurrent response became weak and the relax time became longer.

  14. P-type Cu--Ti--O nanotube arrays and their use in self-biased heterojunction photoelectrochemical diodes for hydrogen generation.

    Science.gov (United States)

    Mor, Gopal K; Varghese, Oomman K; Wilke, Rudeger H T; Sharma, Sanjeev; Shankar, Karthik; Latempa, Thomas J; Choi, Kyoung-Shin; Grimes, Craig A

    2008-07-01

    Copper and titanium remain relatively plentiful in the earth's crust; hence, their use for large-scale solar energy conversion technologies is of significant interest. We describe fabrication of vertically oriented p-type Cu-Ti-O nanotube array films by anodization of copper rich (60% to 74%) Ti metal films cosputtered onto fluorine doped tin oxide (FTO) coated glass. Cu-Ti-O nanotube array films 1 mum thick exhibit external quantum efficiencies up to 11%, with a spectral photoresponse indicating that the complete visible spectrum, 380 to 885 nm, contributes significantly to the photocurrent generation. Water-splitting photoelectrochemical pn-junction diodes are fabricated using p-type Cu-Ti-O nanotube array films in combination with n-type TiO 2 nanotube array films. With the glass substrates oriented back-to-back, light is incident upon the UV absorbing n-TiO 2 side, with the visible light passing to the p-Cu-Ti-O side. In a manner analogous to photosynthesis, photocatalytic reactions are powered only by the incident light to generate fuel with oxygen evolved from the n-TiO 2 side of the diode and hydrogen from the p-Cu-Ti-O side. To date, we find under global AM 1.5 illumination that such photocorrosion-stable diodes generate a photocurrent of approximately 0.25 mA/cm (2), at a photoconversion efficiency of 0.30%.

  15. Chemical Bath Deposition of p-Type Transparent, Highly Conducting (CuS)x:(ZnS)1-x Nanocomposite Thin Films and Fabrication of Si Heterojunction Solar Cells.

    Science.gov (United States)

    Xu, Xiaojie; Bullock, James; Schelhas, Laura T; Stutz, Elias Z; Fonseca, Jose J; Hettick, Mark; Pool, Vanessa L; Tai, Kong Fai; Toney, Michael F; Fang, Xiaosheng; Javey, Ali; Wong, Lydia Helena; Ager, Joel W

    2016-03-09

    P-type transparent conducting films of nanocrystalline (CuS)x:(ZnS)1-x were synthesized by facile and low-cost chemical bath deposition. Wide angle X-ray scattering (WAXS) and high resolution transmission electron microscopy (HRTEM) were used to evaluate the nanocomposite structure, which consists of sub-5 nm crystallites of sphalerite ZnS and covellite CuS. Film transparency can be controlled by tuning the size of the nanocrystallites, which is achieved by adjusting the concentration of the complexing agent during growth; optimal films have optical transmission above 70% in the visible range of the spectrum. The hole conductivity increases with the fraction of the covellite phase and can be as high as 1000 S cm(-1), which is higher than most reported p-type transparent materials and approaches that of n-type transparent materials such as indium tin oxide (ITO) and aluminum doped zinc oxide (AZO) synthesized at a similar temperature. Heterojunction p-(CuS)x:(ZnS)1-x/n-Si solar cells were fabricated with the nanocomposite film serving as a hole-selective contact. Under 1 sun illumination, an open circuit voltage of 535 mV was observed. This value compares favorably to other emerging heterojunction Si solar cells which use a low temperature process to fabricate the contact, such as single-walled carbon nanotube/Si (370-530 mV) and graphene/Si (360-552 mV).

  16. Influence of Li doping on the optical and magnetic properties of ZnO nanorods synthesized by low temperature hydrothermal method

    Energy Technology Data Exchange (ETDEWEB)

    Kung, C.Y., E-mail: cykung@dragon.nchu.edu.tw [Department of Electrical Engineering, National Chung Hsing University, Taichung 40227, Taiwan (China); Lin, C.C. [Department of Electrical Engineering, National Chung Hsing University, Taichung 40227, Taiwan (China); Young, S.L., E-mail: slyoung@mail.hust.edu.tw [Department of Electronic Engineering, Hsiuping University of Science and Technology, Taichung 41280, Taiwan (China); Horng, Lance; Shih, Y.T. [Department of Physics, National Changhua University of Education, Changhua 50007, Taiwan (China); Kao, M.C.; Chen, H.Z. [Department of Electronic Engineering, Hsiuping University of Science and Technology, Taichung 41280, Taiwan (China); Lin, H.H. [Department and Graduate School of Electrical Engineering, Hsiuping University of Science and Technology, Taichung 41280, Taiwan (China); Lin, J.H.; Wang, S.J.; Li, J.M. [Department of Electronic Engineering, Hsiuping University of Science and Technology, Taichung 41280, Taiwan (China)

    2013-02-01

    Well-defined pure Zn{sub 1−x}Li{sub x}O (x = 0, 0.05 and 0.1) nanorods were hydrothermally synthesized at the low temperature of 90 °C. The X-ray diffraction patterns of all three compositions with a single diffraction peak (0002) showed the same wurtzite hexagonal structure due to the similar radius of Zn and Li. The optical and magnetic properties were influenced by the oxygen vacancies induced by Li doping in the ZnO nanorods. The Raman shift spectrum indicated a slight increasement of oxygen vacancies which enhanced the green emission and ferromagnetism by the doping of Li in the ZnO nanorods. Besides, p-type ZnO:Li semiconductor nanorods were obtained by Li doping. The characteristics of the UV photodetector with p-ZnO:Li nanorod/n-Si structure were also measured. - Highlights: ► Zn{sub 1−x}Li{sub x}O nanorods have grown by hydrothermal method at a low temperature of 90 °C. ► Doping of Li increases the doping-induced defects. ► Saturation magnetization increases as Li content increases. ► ZnO-based UV photodetector with nanorod structure is achieved.

  17. Effects of phosphorus-doping on energy band-gap, structural, surface, and photocatalytic characteristics of emulsion-based sol-gel derived TiO2 nano-powder

    Science.gov (United States)

    Ganesh, Ibram

    2017-08-01

    Different amounts of phosphorus (P)-doped TiO2 (PDT) nano-powders (P = 0-10 wt.%) were synthesized by following a new emulsion-based sol-gel (EBSG) route and calcined at 400 °C-800 °C for 6 h. These calcined PDT powders were then thoroughly characterized by means of XRD, XPS, SEM, FT-IR, FT-Raman, DRS, BET surface area, zeta-potential, cyclic-voltammetry and photocatalytic evaluation using methylene blue (MB) as a model-pollutant and established the effects of phosphorous doping on structural, surface, band-gap energy, and photocatalytic characteristics of TiO2 nano-powder formed in EBSG route. The characterization results suggest that the EBSG derived TiO2 nano-powder after calcination at 400 °C for 6 h is in the form of anatase phase when it was doped with 8 wt.% P. Furthermore, these EBSG derived PDT powders own high negative zeta-potentials, high specific surface areas (up to >250 m2/g), and suitable band-gap energies (<3.34 eV). Surprisingly, these PDT powders exhibit very high MB adsorption (up to 50%) from its aqueous 0.01 mM, 0.02 mM and 0.03 mM solutions during 30 min stirring in the dark, whereas, the commercial Degussa P-25 TiO2 nano-powder shows no adsorption. Among various photocatalysts investigated in this study, the 1 wt.% P-doped TiO2 nano-powder formed in EBSG route exhibited the highest photocatalytic activity for MB degradation reaction.

  18. The effect of Pr co-doping on the densification and electrical properties of Sr-LaAlO3

    Directory of Open Access Journals (Sweden)

    L. A. Villas-Boas

    2013-01-01

    Full Text Available Perovskite-type materials have been investigated extensively in the attempt to discover new electrolyte materials for solid oxide fuel cells (SOFC operating at low temperatures. These materials include LaAlO3-based perovskite, which, when adequately doped, presents high ionic conductivity. However, despite the high conductivity of doped LaAlO3, two characteristics limit its application as solid electrolyte: low sinterability and p-type electronic conductivity in oxidizing conditions. The purpose of this work was to investigate the effect of Pr co-doping on the densification and electrical conductivity of Sr-doped LaAlO3. The addition of Pr eliminated the deficiencies mentioned above. Pr in solid solution acts as a perfect sintering aid because promoted densification without forming secondary phase which should be detrimental for electrical conduction. The addition of Pr also increased the bulk electrical conductivity measured in air atmosphere but had no effect at low oxygen partial pressure. However, the addition of Pr had a strong effect on the grain boundary, improving the ionic grain boundary electrical conductivity at air atmosphere which was attributed to the Pr influence on the space charge layer.

  19. The thermoluminescence glow curve and the deconvoluted glow peak characteristics of erbium doped silica fiber exposed to 70-130 kVp x-rays.

    Science.gov (United States)

    Alawiah, A; Bauk, S; Marashdeh, M W; Nazura, M Z N; Abdul-Rashid, H A; Yusoff, Z; Gieszczyk, W; Noramaliza, M N; Adikan, F R Mahamd; Mahdiraji, G A; Tamchek, N; Muhd-Yassin, S Z; Mat-Sharif, K A; Zulkifli, M I; Omar, N; Wan Abdullah, W S; Bradley, D A

    2015-10-01

    In regard to thermoluminescence (TL) applied to dosimetry, in recent times a number of researchers have explored the role of optical fibers for radiation detection and measurement. Many of the studies have focused on the specific dopant concentration, the type of dopant and the fiber core diameter, all key dependencies in producing significant increase in the sensitivity of such fibers. At doses of less than 1 Gy none of these investigations have addressed the relationship between dose response and TL glow peak behavior of erbium (Er)-doped silica cylindrical fibers (CF). For x-rays obtained at accelerating potentials from 70 to 130 kVp, delivering doses of between 0.1 and 0.7 Gy, present study explores the issue of dose response, special attention being paid to determination of the kinetic parameters and dosimetric peak properties of Er-doped CF. The effect of dose response on the kinetic parameters of the glow peak has been compared against other fiber types, revealing previously misunderstood connections between kinetic parameters and radiation dose. Within the investigated dose range there was an absence of supralinearity of response of the Er-doped silica CF, instead sub-linear response being observed. Detailed examination of glow peak response and kinetic parameters has thus been shown to shed new light of the rarely acknowledged issue of the limitation of TL kinetic model and sub-linear dose response of Er-doped silica CF.

  20. Studies on electrochemically constructed n- and p-type photoelectrodes for use in solar energy conversion

    Science.gov (United States)

    Kang, Donghyeon

    Among several pathways to harvest solar energy, solar water splitting is one of the most efficient methods to convert solar light to hydrogen, which is a clean and easy to store chemical that has the potential to be used as a fuel source. Solar water splitting can be achieved primarily by photoelectrochemical cells (PECs), which utilize semiconductors as photoelectrodes for the water splitting reaction. Photoelectrodes play the crucial role of generating hydrogen but, to date, very few photoelectrodes have been developed that can produce hydrogen in a stable and efficient manner. Thus, development and modification of efficient, stable photoelectrodes are highly desirable to improve performance of solar water splitting PECs. This dissertation demonstrates the development of semiconductors as photoelectrodes and their modifications to advance solar energy conversion performance by newly established electrochemical synthetic routes. To improve the photoelectrochemical performance of photoelectrodes, various strategies were introduced, such as, morphology control, extrinsic doping, and the integration of catalysts. After successfully demonstrating the electrochemical synthesis of photoelectrodes, photoelectrochemical and electrochemical properties of electrodeposited photoelectrodes in PECs are discussed. The chapters can be categorized into three major themes. The first theme is the preparation of Bi-based photoanodes for the water oxidation reaction. Chapter 2 presents a study of Mo-doping into the BiVO4 photoanode to enhance charge separation properties. After Mo-doping was achieved successfully, a FeOOH oxygen evoltuion catalyst was integrated into the Mo-doped BiVO 4 photoanode to increase the water oxidation performance. Chapter 3 introduces another electrochemical synthesis method to control the morphology of Bi-based oxide photoanode materials. The second theme of this dissertation is the preparation of photocathode materials for the water reduction reaction

  1. Free-charge carrier parameters of n-type, p-type and compensated InN:Mg determined by Infrared Spectroscopic Ellipsometry

    CERN Document Server

    Schöche, S; Darakchieva, V; Wang, X; Yoshikawa, A; Wang, K; Araki, T; Nanishi, Y; Schubert, M

    2013-01-01

    Infrared spectroscopic ellipsometry is applied to investigate the free-charge carrier properties of Mg-doped InN films. Two representative sets of In-polar InN grown by molecular beam epitaxy with Mg concentrations ranging from $1.2\\times10^{17}$ cm$^{-3}$ to $8\\times10^{20}$ cm$^{-3}$ are compared. P-type conductivity is indicated for the Mg concentration range of $1\\times10^{18}$ cm$^{-3}$ to $9\\times10^{19}$ cm$^{-3}$ from a systematic investigation of the longitudinal optical phonon plasmon broadening and the mobility parameter in dependence of the Mg concentration. A parameterized model that accounts for the phonon-plasmon coupling is applied to determine the free-charge carrier concentration and mobility parameters in the doped bulk InN layer as well as the GaN template and undoped InN buffer layer for each sample. The free-charge carrier properties in the second sample set are consistent with the results determined in a comprehensive analysis of the first sample set reported earlier [Sch\\"oche et al., ...

  2. Hole traps associated with high-concentration residual carriers in p-type GaAsN grown by chemical beam epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Elleuch, Omar, E-mail: mr.omar.elleuch@gmail.com; Wang, Li; Lee, Kan-Hua; Demizu, Koshiro; Ikeda, Kazuma; Kojima, Nobuaki; Ohshita, Yoshio; Yamaguchi, Masafumi [Toyota Technological Institute, 2-12-1 Hisakata, Tempaku, Nagoya 468-8511 (Japan)

    2015-01-28

    The hole traps associated with high background doping in p-type GaAsN grown by chemical beam epitaxy are studied based on the changes of carrier concentration, junction capacitance, and hole traps properties due to the annealing. The carrier concentration was increased dramatically with annealing time, based on capacitance–voltage (C–V) measurement. In addition, the temperature dependence of the junction capacitance (C–T) was increased rapidly two times. Such behavior is explained by the thermal ionization of two acceptor states. These acceptors are the main cause of high background doping in the film, since the estimated carrier concentration from C–T results explains the measured carrier concentration at room temperature using C–V method. The acceptor states became shallower after annealing, and hence their structures are thermally unstable. Deep level transient spectroscopy (DLTS) showed that the HC2 hole trap was composed of two signals, labeled HC21 and HC22. These defects correspond to the acceptor levels, as their energy levels obtained from DLTS are similar to those deduced from C–T. The capture cross sections of HC21 and HC22 are larger than those of single acceptors. In addition, their energy levels and capture cross sections change in the same way due to the annealing. This tendency suggests that HC21 and HC22 signals originate from the same defect which acts as a double acceptor.

  3. Monolayer MoS2 Nanoribbons as a Promising Material for Both n-type and p-type Legs in Thermoelectric Generators

    Science.gov (United States)

    Arab, A.; Davydov, A. V.; Papaconstantopoulos, D. A.; Li, Q.

    2016-10-01

    First-principles calculations have been performed to study the thermoelectric properties of monolayer MoS2 armchair nanoribbons (ACNRs). The electronic behavior of nanoribbons is dominated by the presence of edge states that are dependent on the number of zigzag chains across the nanoribbon. In addition, it is found that the phonon thermal conductance of monolayer MoS2 ACNRs is smaller than monolayer films due to phonon edge scattering. This effect is more pronounced in narrower nanoribbons, which leads to a higher ZT value compared to a monolayer MoS2 sheet. The effects of sulfur vacancy and edge roughness on the thermoelectric properties of MoS2 ACNRs have also been studied. We found that edge roughness decreased ZT values compared to those of perfect nanoribbons, as its impact on electrical conductance is more severe than on phonon thermal conductance. Sulfur vacancy, however, improved ZT in some subbands. It is shown that ZT values as high as 4 for electron-doped and 3 for hole-doped nanoribbons can be achieved at T = 500 K. The ability to achieve high ZT values for both p-type and n-type nanoribbons makes monolayer MoS2 ACNR a promising candidate for future solid-state thermoelectric generators.

  4. Magnetism in 3d transition metal doped SnO

    KAUST Repository

    Albar, Arwa

    2016-09-12

    Using first principles calculations, we investigate the structural and electronic properties of 3d transition metal doped SnO. We examine the stability of different doping sites using formation energy calculations. The magnetic behavior of the dopant atoms is found to be complex because of interplay between strong structural relaxation, spin-lattice coupling, and crystal field splitting. The interaction between dopant atoms is analyzed as a function of their separation, showing that clustering typically counteracts spin polarization. An exception is found for V doping, which thus turns out to be a promising candidate for realizing a magnetic p-type oxide.

  5. Doping Silicon Wafers with Boron by Use of Silicon Paste

    Institute of Scientific and Technical Information of China (English)

    Yu Gao; Shu Zhou; Yunfan Zhang; Chen Dong; Xiaodong Pi; Deren Yang

    2013-01-01

    In this work we introduce recently developed silicon-paste-enabled p-type doping for silicon.Boron-doped silicon nanoparticles are synthesized by a plasma approach.They are then dispersed in solvents to form silicon paste.Silicon paste is screen-printed at the surface of silicon wafers.By annealing,boron atoms in silicon paste diffuse into silicon wafers.Chemical analysis is employed to obtain the concentrations of boron in silicon nanoparticles.The successful doping of silicon wafers with boron is evidenced by secondary ion mass spectroscopy (SIMS) and sheet resistance measurements.

  6. DLTS study of deep centers created by Ar-ion bombardment in n- and p-type MBE AlGaAs

    Science.gov (United States)

    Kaniewska, M.; Sadowski, J.; Guziewicz, M.

    2004-07-01

    The thermal emission rate of dominant traps in molecular beam epitaxial n- and p-type AlGaAs subjected to Ar-ion beam etching has been studied by deep level transient spectroscopy. Emission signatures were determined and compared with results obtained by other authors for irradiation induced and grown-in defects in GaAs and AlGaAs. The most significant result of this study is the observation that the process-induced defects in n- as well as p-type AlGaAs exhibit emission signatures, which are characteristic of native defects found in GaAs. The effect is discussed in terms of a compensation effect and related band bending.

  7. Effect of indium and antimony doping in SnS single crystals

    Energy Technology Data Exchange (ETDEWEB)

    Chaki, Sunil H., E-mail: sunilchaki@yahoo.co.in; Chaudhary, Mahesh D.; Deshpande, M.P.

    2015-03-15

    Highlights: • Single crystals growth of pure SnS, indium doped SnS and antimony doped SnS by direct vapour transport (DVT) technique. • Doping of In and Sb occurred in SnS single crystals by cation replacement. • The replacement mechanism ascertained by EDAX, XRD and substantiated by Raman spectra analysis. • Dopants concentration affects the optical energy bandgap. • Doping influences electrical transport properties. - Abstract: Single crystals of pure SnS, indium (In) doped SnS and antimony (Sb) doped SnS were grown by direct vapour transport (DVT) technique. Two doping concentrations of 5% and 15% each were employed for both In and Sb dopants. Thus in total five samples were studied viz., pure SnS (S1), 5% In doped SnS (S2), 15% In doped SnS (S3), 5% Sb doped SnS (S4) and 15% Sb doped SnS (S5). The grown single crystal samples were characterized by evaluating their surface microstructure, stoichiometric composition, crystal structure, Raman spectroscopy, optical and electrical transport properties using appropriate techniques. The d.c. electrical resistivity and thermoelectric power variations with temperature showed semiconducting and p-type nature of the as-grown single crystal samples. The room temperature Hall Effect measurements further substantiated the semiconducting and p-type nature of the as-grown single crystal samples. The obtained results are deliberated in detail.

  8. Ivermectin is a nonselective inhibitor of mammalian P-type ATPases.

    Science.gov (United States)

    Pimenta, Paulo Henrique Cotrim; Silva, Claudia Lucia Martins; Noël, François

    2010-02-01

    Ivermectin is a large spectrum antiparasitic drug that is very safe at the doses actually used. However, as it is being studied for new applications that would require higher doses, we should pay attention to its effects at high concentrations. As micromolar concentrations of ivermectin have been reported to inhibit the sarco-endoplasmic reticulum Ca(2+)-ATPase (SERCA), we decided to investigate its putative inhibitory effect on other two important P-type ATPases, namely the Na(+) , K(+)-ATPase and H(+)/K(+)-ATPase. We first extended the data on SERCA, using preparations from rat enriched in SERCA1a (extensor digitorum longus) and 1b (heart) isoforms. Secondly, we tested the effect of ivermectin in two preparations of rat Na(+), K(+)-ATPase in order to appreciate its putative selectivity towards the alpha(1) isoform (kidney) and the alpha(2)/alpha(3) isoforms (brain), and in an H(+)/K(+)-ATPase preparation from rat stomach. Ivermectin inhibited all these ATPases with similar IC(50) values (6-17 microM). With respect to the inhibition of the Na(+), K(+)-ATPase, ivermectin acts by a mechanism different from the classical cardiac glycosides, based on selectivity towards the isoforms, sensibility to the antagonistic effect of K(+) and to ionic conditions favoring different conformations of the enzyme. We conclude that ivermectin is a nonselective inhibitor of three important mammalian P-type ATPases, which is indicative of putative important adverse effects if this drug were used at high doses. As a consequence, we propose that novel analogs of ivermectin should be developed and tested both for their parasitic activity and in vitro effects on P-type ATPases.

  9. Enhanced photovoltaic effect of ruthenium complex-modified graphene oxide with P-type conductivity

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, Wei, E-mail: jj_zw_js@sina.com.cn; Bai, Huicong; Zhang, Yu; Sun, Ying; Lin, Shen; Liu, Jian; Yang, Qi; Song, Xi-Ming, E-mail: songlab@lnu.edu.cn

    2014-10-15

    A graphene oxide nanocomposite with bis(1,10-phenanthroline)(N-(2-aminoethyl)-4-(4-methyl-2,2-bipyridine-4-yl) formamide) ruthenium (Ru(phen){sub 2}(bpy-NH{sub 2})(PF{sub 6}){sub 2}), a ruthenium complex, was synthesized by amidation reaction between amino group of the ruthenium complex and carboxyl group of GO. The as-prepared Ru(II)–GO composite was characterized by infrared (IR) spectroscopy, X-ray photoelectron spectroscopy (XPS), ultraviolet–visible (UV–Vis) absorption spectra, fluorescence spectra, surface photovoltage (SPV) spectrum and transient photovoltage (TPV) technology. This nanocomposite showed a typical p-type character and an enhanced photovoltaic effect at long timescale of about 3 × 10{sup −3} s compared to GO alone. A reversible rise/decay of the photocurrent in response to the on/off illumination step was also observed in a photoelectrochemical cell of the Ru(II)–GO composite. The photocurrent response of the Ru(II)–GO film was remarkably higher than that of GO film. Therefore, this Ru(II)–GO composite is believed to be a promising p-type photoelectric conversion material for further photovoltaic applications. - Highlights: • A new dye-sensitized graphene oxide nanocomposite was reported. • A photo-induced charge transfer process in this nanocomposite was confirmed. • This composite showed a typical p-type conductivity. • This composite showed an enhanced photovoltaic effect at a long timescale.

  10. Ultrasonic study of point defects in electron-irradiated p-type silicon

    Energy Technology Data Exchange (ETDEWEB)

    Johnson, W.L.

    1987-01-01

    The mechanisms of interaction of ultrasonic waves with point defects in crystals are reviewed, and a perturbation approach is introduced that leads to general expressions for the resonance and relaxation strengths in terms of matrix elements of the ultrasonic perturbation. These expressions provide the basis for a discussion of the polarization dependence of resonance and relaxation. Selection rules for cubic crystals are presented. An exploratory ultrasonic study is performed on electron-irradiated B-doped and Al-doped silicon. Neutral substitutional boron is detected before irradiation, as expected from previous ultrasonic studies on unirradiated silicon. This defect produces both resonance and relaxation. Similar effects are observed for substitutional aluminum. After irradiation, a relaxation is observed when the sample is exposed to 0.18-0.39 eV light. By comparison with previous EPR results, this relaxation is identified as the singly positively charged state of the vacancy, V/sup +/. Preliminary results on the relaxation time and strength of V/sup +/ suggest that it may have several populated vibronic levels. Another relaxation is observed in irradiated Al-doped silicon when the sample is exposed to white light. From its annealing behavior and dopant dependence, it is identified as a nonequilibrium charge state of interstitial aluminum.

  11. Electroforming-free resistive switching memory effect in transparent p-type tin monoxide

    KAUST Repository

    Hota, M. K.

    2014-04-14

    We report reproducible low bias bipolar resistive switching behavior in p-type SnO thin film devices without extra electroforming steps. The experimental results show a stable resistance ratio of more than 100 times, switching cycling performance up to 180 cycles, and data retention of more than 103 s. The conduction mechanism varied depending on the applied voltage range and resistance state of the device. The memristive switching is shown to originate from a redox phenomenon at the Al/SnO interface, and subsequent formation/rupture of conducting filaments in the bulk of the SnO layer, likely involving oxygen vacancies and Sn interstitials.

  12. Does p-type ohmic contact exist in WSe2-metal interfaces?

    Science.gov (United States)

    Wang, Yangyang; Yang, Ruo Xi; Quhe, Ruge; Zhong, Hongxia; Cong, Linxiao; Ye, Meng; Ni, Zeyuan; Song, Zhigang; Yang, Jinbo; Shi, Junjie; Li, Ju; Lu, Jing

    2015-12-01

    Formation of low-resistance metal contacts is the biggest challenge that masks the intrinsic exceptional electronic properties of two dimensional WSe2 devices. We present the first comparative study of the interfacial properties between monolayer/bilayer (ML/BL) WSe2 and Sc, Al, Ag, Au, Pd, and Pt contacts by using ab initio energy band calculations with inclusion of the spin-orbital coupling (SOC) effects and quantum transport simulations. The interlayer coupling tends to reduce both the electron and hole Schottky barrier heights (SBHs) and alters the polarity for the WSe2-Au contact, while the SOC chiefly reduces the hole SBH. In the absence of the SOC, the Pd contact has the smallest hole SBH. Dramatically, the Pt contact surpasses the Pd contact and becomes the p-type ohmic or quasi-ohmic contact with inclusion of the SOC. Therefore, p-type ohmic or quasi-ohmic contact exists in WSe2-metal interfaces. Our study provides a theoretical foundation for the selection of favorable metal electrodes in ML/BL WSe2 devices.Formation of low-resistance metal contacts is the biggest challenge that masks the intrinsic exceptional electronic properties of two dimensional WSe2 devices. We present the first comparative study of the interfacial properties between monolayer/bilayer (ML/BL) WSe2 and Sc, Al, Ag, Au, Pd, and Pt contacts by using ab initio energy band calculations with inclusion of the spin-orbital coupling (SOC) effects and quantum transport simulations. The interlayer coupling tends to reduce both the electron and hole Schottky barrier heights (SBHs) and alters the polarity for the WSe2-Au contact, while the SOC chiefly reduces the hole SBH. In the absence of the SOC, the Pd contact has the smallest hole SBH. Dramatically, the Pt contact surpasses the Pd contact and becomes the p-type ohmic or quasi-ohmic contact with inclusion of the SOC. Therefore, p-type ohmic or quasi-ohmic contact exists in WSe2-metal interfaces. Our study provides a theoretical foundation for

  13. Initial results from 3D-DDTC detectors on p-type substrates

    Energy Technology Data Exchange (ETDEWEB)

    Zoboli, A., E-mail: zoboli@disi.unitn.i [Dipartimento di Ingegneria e Scienza dell' Informazione, Universita di Trento, and INFN, Sezione di Padova (Gruppo Collegato di Trento), Via Sommarive, 14, I-38100 Povo di Trento (Italy); Boscardin, M. [Fondazione Bruno Kessler, Centro per i Materiali e i Microsistemi, Via Sommarive, 18, I-38100 Povo di Trento (Italy); Bosisio, L. [Dipartimento di Fisica, Universita di Trieste, and INFN, Sezione di Trieste, Via A. Valerio, 2, I-34127 Trieste (Italy); Dalla Betta, G.-F. [Dipartimento di Ingegneria e Scienza dell' Informazione, Universita di Trento, and INFN, Sezione di Padova (Gruppo Collegato di Trento), Via Sommarive, 14, I-38100 Povo di Trento (Italy); Piemonte, C.; Ronchin, S.; Zorzi, N. [Fondazione Bruno Kessler, Centro per i Materiali e i Microsistemi, Via Sommarive, 18, I-38100 Povo di Trento (Italy)

    2010-01-11

    Owing to their superior radiation hardness compared to planar detectors, 3D detectors are one of the most promising technologies for the LHC upgrade foreseen in 2017. Fondazione Bruno Kessler has developed 3D Double-side Double-Type Column (3D-DDTC) detectors providing a technological simplifications with respect to a standard 3D process while aiming at comparable detector performance. We present selected results from the electrical characterization of 3D-DDTC structures from the second batch made on p-type substrates, supported also by TCAD simulations.

  14. Structure and mechanism of Zn2+-transporting P-type ATPases

    DEFF Research Database (Denmark)

    Wang, Kaituo; Sitsel, Oleg; Meloni, Gabriele

    2014-01-01

    Zinc is an essential micronutrient for all living organisms. It is required for signalling and proper functioning of a range of proteins involved in, for example, DNA binding and enzymatic catalysis1. In prokaryotes and photosynthetic eukaryotes, Zn2+-transporting P-type ATPases of class IB (Znt....... The structures reveal a similar fold to Cu+-ATPases, with an amphipathic helix at the membrane interface. A conserved electronegative funnel connects this region to the intramembranous high-affinity ion-binding site and may promote specific uptake of cellular Zn2+ ions by the transporter. The E2P structure...

  15. P-Type Silicon Strip Sensors for the new CMS Tracker at HL-LHC

    Science.gov (United States)

    Adam, W.; Bergauer, T.; Brondolin, E.; Dragicevic, M.; Friedl, M.; Frühwirth, R.; Hoch, M.; Hrubec, J.; König, A.; Steininger, H.; Waltenberger, W.; Alderweireldt, S.; Beaumont, W.; Janssen, X.; Lauwers, J.; Van Mechelen, P.; Van Remortel, N.; Van Spilbeeck, A.; Beghin, D.; Brun, H.; Clerbaux, B.; Delannoy, H.; De Lentdecker, G.; Fasanella, G.; Favart, L.; Goldouzian, R.; Grebenyuk, A.; Karapostoli, G.; Lenzi, Th.; Léonard, A.; Luetic, J.; Postiau, N.; Seva, T.; Vanlaer, P.; Vannerom, D.; Wang, Q.; Zhang, F.; Abu Zeid, S.; Blekman, F.; De Bruyn, I.; De Clercq, J.; D'Hondt, J.; Deroover, K.; Lowette, S.; Moortgat, S.; Moreels, L.; Python, Q.; Skovpen, K.; Van Mulders, P.; Van Parijs, I.; Bakhshiansohi, H.; Bondu, O.; Brochet, S.; Bruno, G.; Caudron, A.; Delaere, C.; Delcourt, M.; De Visscher, S.; Francois, B.; Giammanco, A.; Jafari, A.; Komm, M.; Krintiras, G.; Lemaitre, V.; Magitteri, A.; Mertens, A.; Michotte, D.; Musich, M.; Piotrzkowski, K.; Quertenmont, L.; Szilasi, N.; Vidal Marono, M.; Wertz, S.; Beliy, N.; Caebergs, T.; Daubie, E.; Hammad, G. H.; Härkönen, J.; Lampén, T.; Luukka, P.; Peltola, T.; Tuominen, E.; Tuovinen, E.; Eerola, P.; Tuuva, T.; Baulieu, G.; Boudoul, G.; Caponetto, L.; Combaret, C.; Contardo, D.; Dupasquier, T.; Gallbit, G.; Lumb, N.; Mirabito, L.; Perries, S.; Vander Donckt, M.; Viret, S.; Agram, J.-L.; Andrea, J.; Bloch, D.; Bonnin, C.; Brom, J.-M.; Chabert, E.; Chanon, N.; Charles, L.; Conte, E.; Fontaine, J.-Ch.; Gross, L.; Hosselet, J.; Jansova, M.; Tromson, D.; Autermann, C.; Feld, L.; Karpinski, W.; Kiesel, K. M.; Klein, K.; Lipinski, M.; Ostapchuk, A.; Pierschel, G.; Preuten, M.; Rauch, M.; Schael, S.; Schomakers, C.; Schulz, J.; Schwering, G.; Wlochal, M.; Zhukov, V.; Pistone, C.; Fluegge, G.; Kuensken, A.; Pooth, O.; Stahl, A.; Aldaya, M.; Asawatangtrakuldee, C.; Beernaert, K.; Bertsche, D.; Contreras-Campana, C.; Eckerlin, G.; Eckstein, D.; Eichhorn, T.; Gallo, E.; Garay Garcia, J.; Hansen, K.; Haranko, M.; Harb, A.; Hauk, J.; Keaveney, J.; Kalogeropoulos, A.; Kleinwort, C.; Lohmann, W.; Mankel, R.; Maser, H.; Mittag, G.; Muhl, C.; Mussgiller, A.; Pitzl, D.; Reichelt, O.; Savitskyi, M.; Schuetze, P.; Walsh, R.; Zuber, A.; Biskop, H.; Buhmann, P.; Centis-Vignali, M.; Garutti, E.; Haller, J.; Hoffmann, M.; Lapsien, T.; Matysek, M.; Perieanu, A.; Scharf, Ch.; Schleper, P.; Schmidt, A.; Schwandt, J.; Sonneveld, J.; Steinbrück, G.; Vormwald, B.; Wellhausen, J.; Abbas, M.; Amstutz, C.; Barvich, T.; Barth, Ch.; Boegelspacher, F.; De Boer, W.; Butz, E.; Caselle, M.; Colombo, F.; Dierlamm, A.; Freund, B.; Hartmann, F.; Heindl, S.; Husemann, U.; Kornmayer, A.; Kudella, S.; Muller, Th.; Simonis, H. J.; Steck, P.; Weber, M.; Weiler, Th.; Anagnostou, G.; Asenov, P.; Assiouras, P.; Daskalakis, G.; Kyriakis, A.; Loukas, D.; Paspalaki, L.; Siklér, F.; Veszprémi, V.; Bhardwaj, A.; Dalal, R.; Jain, G.; Ranjan, K.; Bakhshiansohl, H.; Behnamian, H.; Khakzad, M.; Naseri, M.; Cariola, P.; Creanza, D.; De Palma, M.; De Robertis, G.; Fiore, L.; Franco, M.; Loddo, F.; Silvestris, L.; Maggi, G.; Martiradonna, S.; My, S.; Selvaggi, G.; Albergo, S.; Cappello, G.; Chiorboli, M.; Costa, S.; Di Mattia, A.; Giordano, F.; Potenza, R.; Saizu, M. A.; Tricomi, A.; Tuve, C.; Barbagli, G.; Brianzi, M.; Ciaranfi, R.; Ciulli, V.; Civinini, C.; D'Alessandro, R.; Focardi, E.; Latino, G.; Lenzi, P.; Meschini, M.; Paoletti, S.; Russo, L.; Scarlini, E.; Sguazzoni, G.; Strom, D.; Viliani, L.; Ferro, F.; Lo Vetere, M.; Robutti, E.; Dinardo, M. E.; Fiorendi, S.; Gennai, S.; Malvezzi, S.; Manzoni, R. A.; Menasce, D.; Moroni, L.; Pedrini, D.; Azzi, P.; Bacchetta, N.; Bisello, D.; Dall'Osso, M.; Pozzobon, N.; Tosi, M.; De Canio, F.; Gaioni, L.; Manghisoni, M.; Nodari, B.; Riceputi, E.; Re, V.; Traversi, G.; Comotti, D.; Ratti, L.; Alunni Solestizi, L.; Biasini, M.; Bilei, G. M.; Cecchi, C.; Checcucci, B.; Ciangottini, D.; Fanò, L.; Gentsos, C.; Ionica, M.; Leonardi, R.; Manoni, E.; Mantovani, G.; Marconi, S.; Mariani, V.; Menichelli, M.; Modak, A.; Morozzi, A.; Moscatelli, F.; Passeri, D.; Placidi, P.; Postolache, V.; Rossi, A.; Saha, A.; Santocchia, A.; Storchi, L.; Spiga, D.; Androsov, K.; Azzurri, P.; Arezzini, S.; Bagliesi, G.; Basti, A.; Boccali, T.; Borrello, L.; Bosi, F.; Castaldi, R.; Ciampa, A.; Ciocci, M. A.; Dell'Orso, R.; Donato, S.; Fedi, G.; Giassi, A.; Grippo, M. T.; Ligabue, F.; Lomtadze, T.; Magazzu, G.; Martini, L.; Mazzoni, E.; Messineo, A.; Moggi, A.; Morsani, F.; Palla, F.; Palmonari, F.; Raffaelli, F.; Rizzi, A.; Savoy-Navarro, A.; Spagnolo, P.; Tenchini, R.; Tonelli, G.; Venturi, A.; Verdini, P. G.; Bellan, R.; Costa, M.; Covarelli, R.; Da Rocha Rolo, M.; Demaria, N.; Rivetti, A.; Dellacasa, G.; Mazza, G.; Migliore, E.; Monteil, E.; Pacher, L.; Ravera, F.; Solano, A.; Fernandez, M.; Gomez, G.; Jaramillo Echeverria, R.; Moya, D.; Gonzalez Sanchez, F. J.; Vila, I.; Virto, A. L.; Abbaneo, D.; Ahmed, I.; Albert, E.; Auzinger, G.; Berruti, G.; Bianchi, G.; Blanchot, G.; Bonnaud, J.; Caratelli, A.; Ceresa, D.; Christiansen, J.; Cichy, K.; Daguin, J.; D'Auria, A.; Detraz, S.; Deyrail, D.; Dondelewski, O.; Faccio, F.; Frank, N.; Gadek, T.; Gill, K.; Honma, A.; Hugo, G.; Jara Casas, L. M.; Kaplon, J.; Kornmayer, A.; Kottelat, L.; Kovacs, M.; Krammer, M.; Lenoir, P.; Mannelli, M.; Marchioro, A.; Marconi, S.; Mersi, S.; Martina, S.; Michelis, S.; Moll, M.; Onnela, A.; Orfanelli, S.; Pavis, S.; Peisert, A.; Pernot, J.-F.; Petagna, P.; Petrucciani, G.; Postema, H.; Rose, P.; Tropea, P.; Troska, J.; Tsirou, A.; Vasey, F.; Vichoudis, P.; Verlaat, B.; Zwalinski, L.; Bachmair, F.; Becker, R.; di Calafiori, D.; Casal, B.; Berger, P.; Djambazov, L.; Donega, M.; Grab, C.; Hits, D.; Hoss, J.; Kasieczka, G.; Lustermann, W.; Mangano, B.; Marionneau, M.; Martinez Ruiz del Arbol, P.; Masciovecchio, M.; Meinhard, M.; Perozzi, L.; Roeser, U.; Starodumov, A.; Tavolaro, V.; Wallny, R.; Zhu, D.; Amsler, C.; Bösiger, K.; Caminada, L.; Canelli, F.; Chiochia, V.; de Cosa, A.; Galloni, C.; Hreus, T.; Kilminster, B.; Lange, C.; Maier, R.; Ngadiuba, J.; Pinna, D.; Robmann, P.; Taroni, S.; Yang, Y.; Bertl, W.; Deiters, K.; Erdmann, W.; Horisberger, R.; Kaestli, H.-C.; Kotlinski, D.; Langenegger, U.; Meier, B.; Rohe, T.; Streuli, S.; Cussans, D.; Flacher, H.; Goldstein, J.; Grimes, M.; Jacob, J.; Seif El Nasr-Storey, S.; Cole, J.; Hoad, C.; Hobson, P.; Morton, A.; Reid, I. D.; Auzinger, G.; Bainbridge, R.; Dauncey, P.; Hall, G.; James, T.; Magnan, A.-M.; Pesaresi, M.; Raymond, D. M.; Uchida, K.; Garabedian, A.; Heintz, U.; Narain, M.; Nelson, J.; Sagir, S.; Speer, T.; Swanson, J.; Tersegno, D.; Watson-Daniels, J.; Chertok, M.; Conway, J.; Conway, R.; Flores, C.; Lander, R.; Pellett, D.; Ricci-Tam, F.; Squires, M.; Thomson, J.; Yohay, R.; Burt, K.; Ellison, J.; Hanson, G.; Olmedo, M.; Si, W.; Yates, B. R.; Gerosa, R.; Sharma, V.; Vartak, A.; Yagil, A.; Zevi Della Porta, G.; Dutta, V.; Gouskos, L.; Incandela, J.; Kyre, S.; Mullin, S.; Patterson, A.; Qu, H.; White, D.; Dominguez, A.; Bartek, R.; Cumalat, J. P.; Ford, W. T.; Jensen, F.; Johnson, A.; Krohn, M.; Leontsinis, S.; Mulholland, T.; Stenson, K.; Wagner, S. R.; Apresyan, A.; Bolla, G.; Burkett, K.; Butler, J. N.; Canepa, A.; Cheung, H. W. K.; Chramowicz, J.; Christian, D.; Cooper, W. E.; Deptuch, G.; Derylo, G.; Gingu, C.; Grünendahl, S.; Hasegawa, S.; Hoff, J.; Howell, J.; Hrycyk, M.; Jindariani, S.; Johnson, M.; Kahlid, F.; Lei, C. M.; Lipton, R.; Lopes De Sá, R.; Liu, T.; Los, S.; Matulik, M.; Merkel, P.; Nahn, S.; Prosser, A.; Rivera, R.; Schneider, B.; Sellberg, G.; Shenai, A.; Spiegel, L.; Tran, N.; Uplegger, L.; Voirin, E.; Berry, D. R.; Chen, X.; Ennesser, L.; Evdokimov, A.; Evdokimov, O.; Gerber, C. E.; Hofman, D. J.; Makauda, S.; Mills, C.; Sandoval Gonzalez, I. D.; Alimena, J.; Antonelli, L. J.; Francis, B.; Hart, A.; Hill, C. S.; Parashar, N.; Stupak, J.; Bortoletto, D.; Bubna, M.; Hinton, N.; Jones, M.; Miller, D. H.; Shi, X.; Tan, P.; Baringer, P.; Bean, A.; Khalil, S.; Kropivnitskaya, A.; Majumder, D.; Wilson, G.; Ivanov, A.; Mendis, R.; Mitchell, T.; Skhirtladze, N.; Taylor, R.; Anderson, I.; Fehling, D.; Gritsan, A.; Maksimovic, P.; Martin, C.; Nash, K.; Osherson, M.; Swartz, M.; Xiao, M.; Bloom, K.; Claes, D. R.; Fangmeier, C.; Gonzalez Suarez, R.; Monroy, J.; Siado, J.; Hahn, K.; Sevova, S.; Sung, K.; Trovato, M.; Bartz, E.; Gershtein, Y.; Halkiadakis, E.; Kyriacou, S.; Lath, A.; Nash, K.; Osherson, M.; Schnetzer, S.; Stone, R.; Walker, M.; Malik, S.; Norberg, S.; Ramirez Vargas, J. E.; Alyari, M.; Dolen, J.; Godshalk, A.; Harrington, C.; Iashvili, I.; Kharchilava, A.; Nguyen, D.; Parker, A.; Rappoccio, S.; Roozbahani, B.; Alexander, J.; Chaves, J.; Chu, J.; Dittmer, S.; McDermott, K.; Mirman, N.; Rinkevicius, A.; Ryd, A.; Salvati, E.; Skinnari, L.; Soffi, L.; Tao, Z.; Thom, J.; Tucker, J.; Zientek, M.; Akgün, B.; Ecklund, K. M.; Kilpatrick, M.; Nussbaum, T.; Zabel, J.; Betchart, B.; Covarelli, R.; Demina, R.; Hindrichs, O.; Petrillo, G.; Eusebi, R.; Osipenkov, I.; Perloff, A.; Ulmer, K. A.

    2017-06-01

    The upgrade of the LHC to the High-Luminosity LHC (HL-LHC) is expected to increase the LHC design luminosity by an order of magnitude. This will require silicon tracking detectors with a significantly higher radiation hardness. The CMS Tracker Collaboration has conducted an irradiation and measurement campaign to identify suitable silicon sensor materials and strip designs for the future outer tracker at the CMS experiment. Based on these results, the collaboration has chosen to use n-in-p type silicon sensors and focus further investigations on the optimization of that sensor type. This paper describes the main measurement results and conclusions that motivated this decision.

  16. About the Nature of Electroluminescence Centers in Plastically Deformed Crystals of p-type Silicon

    Directory of Open Access Journals (Sweden)

    B.V. Pavlyk

    2015-10-01

    Full Text Available The paper describes research of dislocation electroluminescence of single crystal p-type silicon with a high concentration of dislocations on the surface (111. It is shown the reaction of the luminescence spectra and capacitive-modulation spectra of samples after high-temperature annealing in an atmosphere of flowing oxygen. The analysis of the results lets us to establish the nature of recombination centers and their reorganization under high-temperature annealing. It is shown that deposition of Al film on the substrate p-Si leads to the formation of strain capacity and the localization of defects in the surface layer that corresponds to luminescence centers.

  17. Elastic constants determined by nanoindentation for p-type thermoelectric half-Heusler

    Energy Technology Data Exchange (ETDEWEB)

    Gahlawat, S.; Wheeler, L.; White, K. W., E-mail: zren@uh.edu, E-mail: kwwhite@uh.edu [Department of Mechanical Engineering, University of Houston, Houston, Texas 77204 (United States); He, R.; Chen, S.; Ren, Z. F., E-mail: zren@uh.edu, E-mail: kwwhite@uh.edu [Department of Physics and TcSUH, University of Houston, Houston, Texas 77204 (United States)

    2014-08-28

    This paper presents a study of the elastic properties of the p-type thermoelectric half-Heusler material, Hf{sub 0.44}Zr{sub 0.44}Ti{sub 0.12}CoSb{sub 0.8}Sn{sub 0.2}, using nanoindentation. Large grain-sized polycrystalline specimens were fabricated for these measurements, providing sufficient indentation targets within single grains. Electron Backscatter Diffraction methods indexed the target grains for the correlation needed for our elastic analysis of individual single crystals for this cubic thermoelectric material. Elastic properties, including the Zener ratio and the Poisson ratio, obtained from the elasticity tensor are also reported.

  18. Ferromagnetic-resonance induced electromotive forces in Ni81Fe19 | p-type diamond

    Science.gov (United States)

    Fukui, Naoki; Morishita, Hiroki; Kobayashi, Satoshi; Miwa, Shinji; Mizuochi, Norikazu; Suzuki, Yoshishige

    2016-10-01

    We report on direct-current (DC) electromotive forces (emfs) in a nickel-iron alloy (Ni81 Fe19) | p-type diamond under the ferromagnetic resonance of the Ni81Fe19 layer at room temperature. The observed DC emfs take its maximum around the ferromagnetic resonant frequency of the Ni81Fe19, and their signs are reversed by reversing the direction of an externally-applied magnetic field; it shows that the observed DC emfs are spin-related emfs.

  19. Single-structure heater and temperature sensor using a p-type polycrystalline diamond resistor

    Energy Technology Data Exchange (ETDEWEB)

    Yang, G.S.; Aslam, D.M. [Michigan State Univ., East Lansing, MI (United States). Dept. of Electrical Engineering

    1996-05-01

    Heat generation and temperature sensing are required for heating applications and for liquid level sensors, mass flow meters, and vacuum and pressure gauges which are based on variations of heat dissipation. Heat generation and temperature sensing are reported in a single p-type diamond resistor fabricated on an oxidized Si substrate using diamond film technology compatible with integrated circuit (IC) processing. Power densities in excess of 600 W/in.{sup 2} are observed for the heaters. The temperature response of the sensor is characterized in the temperature range of 300--725 K. Such a diamond heater/sensor device is reported for the first time.

  20. Transient expression of P-type ATPases in tobacco epidermal cells

    DEFF Research Database (Denmark)

    Pedas, Lisbeth Rosager; Palmgren, Michael Broberg; Lopez Marques, Rosa Laura

    2016-01-01

    Transient expression in tobacco cells is a convenient method for several purposes such as analysis of protein-protein interactions and the subcellular localization of plant proteins. A suspension of Agrobacterium tumefaciens cells carrying the plasmid of interest is injected into the intracellular...... for example protein-protein interaction studies. In this chapter, we describe the procedure to transiently express P-type ATPases in tobacco epidermal cells, with focus on subcellular localization of the protein complexes formed by P4-ATPases and their β-subunits....