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Sample records for p-si mis schottky

  1. Investigation of diode parameters using I-V and C-V characteristics of In/SiO{sub 2}/p-Si (MIS) Schottky diodes

    Energy Technology Data Exchange (ETDEWEB)

    Yueksel, O.F. [Department of Physics, Faculty of Arts and Science, Selcuk University, Kampus, Konya 42075 (Turkey)], E-mail: fyuksel@selcuk.edu.tr; Selcuk, A.B.; Ocak, S.B. [PK, 14 Etlik, Ankara (Turkey)

    2008-08-01

    A study on interface states density distribution and characteristic parameters of the In/SiO{sub 2}/p-Si (MIS) capacitor has been made. The thickness of the SiO{sub 2} film obtained from the measurement of the corrected capacitance in the strong accumulation region for MIS Schottky diodes was 220 A. The diode parameters from the forward bias I-V characteristics such as ideality factor, series resistance and barrier heights were found to be 1.75, 106-112 {omega} and 0.592 eV, respectively. The energy distribution of the interface state density D{sub it} was determined from the forward bias I-V characteristics by taking into account the bias dependence of the effective barrier height. The interface state density obtained using the I-V characteristics had an exponential growth, with bias towards the top of the valance band, from 9.44x10{sup 13} eV{sup -1} cm{sup -2} in 0.329-E{sub v} eV to 1.11x10{sup 13} eV{sup -1} cm{sup -2} in 0.527-E{sub v} eV at room temperature. Furthermore, the values of interface state density D{sub it} obtained by the Hill-Coleman method from the C-V characteristics range from 52.9x10{sup 13} to 1.11x10{sup 13} eV{sup -1} cm{sup -2} at a frequency range of 30kHz-1 MHz. These values of D{sub it} and R{sub s} were responsible for the non-ideal behaviour of I-V and C-V characteristics.

  2. Electronic properties of Al/DNA/p-Si MIS diode: Application as temperature sensor

    Energy Technology Data Exchange (ETDEWEB)

    Guellue, O., E-mail: omergullu@gmail.com [Batman University, Science and Art Faculty, Department of Physics, 72060 Batman (Turkey); Osmaniye Korkut Ata University, Science and Art Faculty, Department of Physics, 80000 Osmaniye (Turkey); Tueruet, A. [Atatuerk University, Science Faculty, Department of Physics, 25240 Erzurum (Turkey)

    2011-01-21

    Research highlights: > This work proposes that DNA molecules should be considered, among other candidates, as a potential organic thin film for metal-interface layer-semiconductor devices. > We successfully fabricated Al/DNA/p-Si device with interlayer by a simple cast method. > The temperature is found to significantly effect the electrical properties of the Al/DNA/p-Si device. > The facts: (i) that the technology of the fabrication of a Al/DNA/p-Si Schottky diode much simpler and economical than that for the Si p-n junction and (ii) the sensibility of the Al/DNA/p-Si Schottky diode as temperature sensor is 42% higher than that of a Si p-n junction, indicate that the Al/DNA/p-Si Schottky diode is a good alternative as temperature sensor. - Abstract: The current-voltage (I-V) measurements were performed in the temperature range (200-300 K) on Al/DNA/p-Si Schottky barrier type diodes. The Schottky diode shows non-ideal I-V behaviour with ideality factors n equal to 1.34 {+-} 0.02 and 1.70 {+-} 0.02 at 300 K and 200 K, respectively, and is thought to have a metal-interface layer-semiconductor (MIS) configuration. The zero-bias barrier height {Phi}{sub b} determined from the I-V measurements was 0.75 {+-} 0.01 eV at 300 K and decreases to 0.61 {+-} 0.01 eV at 200 K. The forward voltage-temperature (V{sub F}-T) characteristics were obtained from the I-V measurements in the temperature range 200-300 K at different activation currents (I{sub F}) in the range 20 nA-6 {mu}A. The V{sub F}-T characteristics were linear for three activation currents in the diode. From the V{sub F}-T characteristics at 20 nA, 100 nA and 6 {mu}A, the values of the temperature coefficients of the forward bias voltage (dV{sub F}/dT) for the diode were determined as -2.30 mV K{sup -1}, -2.60 mV K{sup -1} and -3.26 mV K{sup -1} with a standard error of 0.05 mV K{sup -1}, respectively.

  3. ALD TiO2 thin film as dielectric for Al/p-Si Schottky diode

    Indian Academy of Sciences (India)

    It has potential applications such as cataly- sis, sensors, antireflection coating, solar cells and Schottky diodes (Kadoshima et al 2003; Pakma et al 2008, ... conductor (MIS) Schottky diodes have an important role in the integrated device technology (Pakma et al 2008, 2009,. 2011; Kınacı et al 2012; Sönmezo˘glu and Akın ...

  4. ALD TiO2 thin film as dielectric for Al/p-Si Schottky diode

    Indian Academy of Sciences (India)

    The – curves in the reverse direction are taken and interpreted via both Schottky and Poole–Frenkel effects. Schottky effect was found to be dominant in the reverse direction. In addition, the capacitance–voltage (–) and conductance–voltage (/–) characteristics of diode were investigated at different frequencies ...

  5. The determination of the interface state density distribution of the Al/methyl red/p-Si Schottky barrier diode by using a capacitance method

    Energy Technology Data Exchange (ETDEWEB)

    Kilicoglu, T. [Department of Physics, Faculty of Science and Art, University of Dicle, Diyarbakir 21280 (Turkey)]. E-mail: tahsin@dicle.edu.tr; Aydin, M.E. [Department of Physics, Faculty of Science and Art, University of Dicle, Diyarbakir 21280 (Turkey); Ocak, Y.S. [Department of Physics, Faculty of Science and Art, University of Dicle, Diyarbakir 21280 (Turkey)

    2007-01-15

    Al/methyl red/p-Si Schottky barrier diodes (SBD) have been fabricated by adding a solution of the non-polymeric organic compound methyl red in chloroform on top of p-Si substrates, and then evaporating the solvent. The electronic and interface state density distribution properties were obtained from the current-voltage (I-V) and the capacitance-voltage (C-V) characteristics (high and low frequency) of Al/methyl red/p-Si SBD at room temperature. The energy distribution of the interface state density located in the inorganic semiconductor band gap at the organic compound/inorganic semiconductor interface in the energy range from (0.675-E{sub v})eV to (0.783-E{sub v})eV has been determined. In addition, the interface state density N{sub ss} range from 6.12x10{sup 13}cm{sup -2}eV{sup -1} in (0.675-E{sub v})eV to 4.31x10{sup 12}cm{sup -2}eV{sup -1} in (0.783-E{sub v})eV. The interface state density has an exponential rise with bias from the mid-gap towards the top of the valence band.

  6. Analysis of frequency-dependent series resistance and interface states of In/SiO{sub 2}/p-Si (MIS) structures

    Energy Technology Data Exchange (ETDEWEB)

    Birkan Selcuk, A. [Department of Nuclear Electronics and Instrumentation, Saraykoey Nuclear Research and Training Center, 06983 Saray, Ankara (Turkey); Tugluoglu, N. [Department of Nuclear Electronics and Instrumentation, Saraykoey Nuclear Research and Training Center, 06983 Saray, Ankara (Turkey)], E-mail: ntuglu@taek.gov.tr; Karadeniz, S.; Bilge Ocak, S. [Department of Nuclear Electronics and Instrumentation, Saraykoey Nuclear Research and Training Center, 06983 Saray, Ankara (Turkey)

    2007-11-15

    In this work, the investigation of the interface state density and series resistance from capacitance-voltage (C-V) and conductance-voltage (G/{omega}-V) characteristics in In/SiO{sub 2}/p-Si metal-insulator-semiconductor (MIS) structures with thin interfacial insulator layer have been reported. The thickness of SiO{sub 2} film obtained from the measurement of the oxide capacitance corrected for series resistance in the strong accumulation region is 220 A. The forward and reverse bias C-V and G/{omega}-V characteristics of MIS structures have been studied at the frequency range 30 kHz-1 MHz at room temperature. The frequency dispersion in capacitance and conductance can be interpreted in terms of the series resistance (R{sub s}) and interface state density (D{sub it}) values. Both the series resistance R{sub s} and density of interface states D{sub it} are strongly frequency-dependent and decrease with increasing frequency. The distribution profile of R{sub s}-V gives a peak at low frequencies in the depletion region and disappears with increasing frequency. Experimental results show that the interfacial polarization contributes to the improvement of the dielectric properties of In/SiO{sub 2}/p-Si MIS structures. The interface state density value of In/SiO{sub 2}/p-Si MIS diode calculated at strong accumulation region is 1.11x10{sup 12} eV{sup -1} cm{sup -2} at 1 MHz. It is found that the calculated value of D{sub it} ({approx}10{sup 12} eV{sup -1} cm{sup -2}) is not high enough to pin the Fermi level of the Si substrate disrupting the device operation.

  7. On the energy distribution profile of interface states obtained by taking into account of series resistance in Al/TiO{sub 2}/p-Si (MIS) structures

    Energy Technology Data Exchange (ETDEWEB)

    Pakma, O., E-mail: osman@pakma.co [Department of Physics, Faculty of Sciences and Arts, Batman University, Batman (Turkey); Serin, N.; Serin, T. [Department of Engineering Physics, Faculty of Engineering, Ankara University, 06100 Tandogan, Ankara (Turkey); Altindal, S. [Physics Department, Faculty of Arts and Sciences, Gazi University, Teknikokullar, 06500 Ankara (Turkey)

    2011-02-15

    The energy distribution profile of the interface states (N{sub ss}) of Al/TiO{sub 2}/p-Si (MIS) structures prepared using the sol-gel method was obtained from the forward bias current-voltage (I-V) characteristics by taking into account both the bias dependence of the effective barrier height ({phi}{sub e}) and series resistance (R{sub s}) at room temperature. The main electrical parameters of the MIS structure such as ideality factor (n), zero-bias barrier height ({phi}{sub b0}) and average series resistance values were found to be 1.69, 0.519 eV and 659 {Omega}, respectively. This high value of n was attributed to the presence of an interfacial insulator layer at the Al/p-Si interface and the density of interface states (N{sub ss}) localized at the Si/TiO{sub 2} interface. The values of N{sub ss} localized at the Si/TiO{sub 2} interface were found with and without the R{sub s} at 0.25-E{sub v} in the range between 8.4x10{sup 13} and 4.9x10{sup 13} eV{sup -1} cm{sup -2}. In addition, the frequency dependence of capacitance-voltage (C-V) and conductance-voltage (G/{omega}-V) characteristics of the structures have been investigated by taking into account the effect of N{sub ss} and R{sub s} at room temperature. It can be found out that the measured C and G/{omega} are strongly dependent on bias voltage and frequency. -- Research highlights: {yields}We successfully fabricated Al/TiO{sub 2}/p-Si device with interlayer by a sol-gel method. The facts: (i) that the technology of the fabrication of a Al/TiO{sub 2}/p-Si MIS structure much simpler and economical than that for the Si p-n junction and (b) the main advantages of TiO{sub 2} films are low densities of the surface states when compared to SiO{sub 2}.

  8. Temperature dependent electrical characterisation of Pt/HfO2/n-GaN metal-insulator-semiconductor (MIS Schottky diodes

    Directory of Open Access Journals (Sweden)

    Arjun Shetty

    2015-09-01

    Full Text Available This paper reports an improvement in Pt/n-GaN metal-semiconductor (MS Schottky diode characteristics by the introduction of a layer of HfO2 (5 nm between the metal and semiconductor interface. The resulting Pt/HfO2/n-GaN metal-insulator-semiconductor (MIS Schottky diode showed an increase in rectification ratio from 35.9 to 98.9(@ 2V, increase in barrier height (0.52 eV to 0.63eV and a reduction in ideality factor (2.1 to 1.3 as compared to the MS Schottky. Epitaxial n-type GaN films of thickness 300nm were grown using plasma assisted molecular beam epitaxy (PAMBE. The crystalline and optical qualities of the films were confirmed using high resolution X-ray diffraction and photoluminescence measurements. Metal-semiconductor (Pt/n-GaN and metal-insulator-semiconductor (Pt/HfO2/n-GaN Schottky diodes were fabricated. To gain further understanding of the Pt/HfO2/GaN interface, I-V characterisation was carried out on the MIS Schottky diode over a temperature range of 150 K to 370 K. The barrier height was found to increase (0.3 eV to 0.79 eV and the ideality factor decreased (3.6 to 1.2 with increase in temperature from 150 K to 370 K. This temperature dependence was attributed to the inhomogeneous nature of the contact and the explanation was validated by fitting the experimental data into a Gaussian distribution of barrier heights.

  9. EIS, Mott Schottky and EFM analysis of the electrochemical stability and dielectric properties of Ca-P-Ag and Ca-P-Si-Ag coatings obtained by plasma electrolytic oxidation in Ti6Al4V

    Directory of Open Access Journals (Sweden)

    Sara María Leal-Marin

    2017-01-01

    Full Text Available El Ti6Al4V ELI (ASTM F136 es una de las aleaciones más empleadas en dispositivos de osteosíntesis y reemplazo articular. Sin embargo, las propiedades de esta aleación pueden ser mejoradas respecto a su biocompatibilidad y osteointegración con el tejido óseo a través de recubrimientos. El objetivo de este trabajo fue evaluar el comportamiento electroquímico de un recubrimiento obtenido por oxidación por plasma electrolítico sobre Ti6Al4V ELI empleando soluciones electrolíticas enriquecidas con iones de PO4 2-, Ca+2, Si+4 y varias concentraciones de Ag+1. Los recubrimientos se caracterizaron mediante espectroscopia de impedancia electroquímica (EIS y Mott-Schottky (M-S en una celda de tres electrodos con una solución fisiológica simulada. El comportamiento electroquímico se contrastó con microscopía de fuerza electrostática (EFM, donde se analizó el potencial eléctrico del recubrimiento. Los resultados de EIS mostraron mejores propiedades de estabilidad frente a la corrosión en los sustratos recubiertos con Ca- P-Ag, comparados con los recubiertos con Ca-P-Si-Ag. Los espectros de Nyquist y Bode mostraron relajaciones relacionadas con la transferencia de carga hacia la doble capa electroquímica como reflejo de los cambios microestructurales y de conductividad de los recubrimientos, dada por la presencia particular en cada caso, de los elementos contenidos en estos. De acuerdo con los resultados de M-S, todas las muestras ensayadas presentaron un comportamiento con dopado tipo n, cuya conductividad incrementó con la inclusión de plata. Mediante EFM se observaron mayores contrastes en el potencial, fase y la amplitud de los recubrimientos con mayor cantidad de plata respecto al Ti6Al4V sin recubrir.

  10. Photoelectrochemical reduction of nitrate on p-Si coated with metallic Re thin films

    Energy Technology Data Exchange (ETDEWEB)

    Munoz, Eduardo, E-mail: eduardo.munoz.c@ucv.c [Instituto de Quimica, Facultad de Ciencias, Pontificia Universidad Catolica de Valparaiso, Casilla 4059, Valparaiso (Chile); Schrebler, Ricardo; Henriquez, Rodrigo; Heyser, Cristopher [Instituto de Quimica, Facultad de Ciencias, Pontificia Universidad Catolica de Valparaiso, Casilla 4059, Valparaiso (Chile); Verdugo, Patricia A. [Departamento de Quimica y Bioquimica, Facultad de Ciencias, Universidad de Valparaiso, Av. Gran Bretana 1111, Valparaiso (Chile); Marotti, Ricardo [Instituto de Fisica, Facultad de Ingenieria, Universidad de La Republica, Herrera y Reissig 565, C.C. 30, 11000 Montevideo (Uruguay)

    2009-11-02

    In this study we examined the rhenium electrodeposition process onto p-Si(100) from acidic media. The study was carried out by means of cyclic voltammetry and the potential-steps method from which the corresponding nucleation and growth mechanism were determined. Both methods were performed under illumination using a solar simulator for electron photogeneration. A 3D progressive nucleation, diffusion-controlled growth of rhenium films was found. Likewise, a morphologic analysis was completed for the deposits obtained at different potential values by means of atomic force microscopy. An energetic characterization through capacitance measurements (Mott-Schottky plots and parallel capacitance) of the p-Si/NO{sub 3}{sup -} and p-Si/Re/NO{sub 3}{sup -} interfaces was done. The photoelectrochemical reduction of nitrate ions, PERN, on the different p-Si/Re electrode systems synthesized was studied. An overpotential decrease of 0.3 V and a photocurrent increase for the PERN on p-Si(100)/Re electrode systems compared with p-Si(100) and metallic Re was found. Finally, the kinetic parameters of the cathodic reactions in the p-Si and p-Si/Re acidic media were estimated using intensity modulated photocurrent spectroscopy. A brief analysis from this technique was done. According to these results, the p-Si/Re electrode system could be a potential photoelectrocatalyst for the PERN.

  11. Mis tuleb

    Index Scriptorium Estoniae

    2005-01-01

    Pärnu Uue Kunsti Muuseumis Uno Roosvaldi maalide ja graafika näitus "Mõttes Kihnus", Heino Lillepuu kollaazhide näitus "Kõik naised on inglid". Tartu Mänguasjamuuseumis jõuluehete näitus. Rahvusraamatukogu fuajees Andy Horneri näitus "Terra Borealis". Eesti Rahva Muuseumis näitus "Põhjamaine tunnetus", mis tutvustab Sleipneri stipendiumi saanud noorte kunstnike valiktöid. Iisaku muuseumis jõulupostkaartide näitus. Eesti Tarbekunsti- ja Disainimuuseumis näitus "Klaashelmed maailma rahvaste kultuuris" (suur osa helmeist ja helmetikandeist on Torben Sode kogust). Rottermanni soolalaos näitus "Kodu, kallis kodu". Viljandi muuseumis on väljas EKA nahakunsti osakonna tööd aastaist 1917-2004 "Mälu ja mäng", Eesti lapitööseltsi näitus, Viljandi maagümnaasiumi kunstistuudio näitus "Jõulusokk". Eesti Meremuuseumis näitus"Klaas, fajanss ja portselan uppunud laevadelt"

  12. Fabrication and Characterization of n-ZnO Hexagonal Nanorods/p-Si Heterojunction Diodes: Temperature-Dependant Electrical Characteristics.

    Science.gov (United States)

    Umar, Ahmad; Badran, R I; Al-Hajry, A; Al-Heniti, S

    2015-07-01

    This paper reports the temperature-dependant electrical characteristics of n-ZnO hexagonal nanorods/p-Si heterojunction diodes. The n-ZnO hexagonal nanorods were grown on p-Si substrate by a simple thermal evaporation process using metallic zinc powder in the presence of oxygen. The spectroscopic characterization revealed well-crystalline nanorods, quasi-aligned to the substrate and possessing hexagonal shape. The as-grown nanorods exhibited a strong near-band-edge emis- sion with very weak deep-level emission in the room-temperature photoluminescence spectrum, confirming good optical properties. Furthermore, the electrical properties of as-grown ZnO nanorods were examined by fabricating n-ZnO/p-Si heterojunction assembly and the I-V characteristics of the fabricated heterojunction assembly were investigated at different temperatures. The fabricated n-ZnO/p-Si heterojunction diodes exhibited a turn-on voltage of ~5 V at different temperatures with a mean built-in-potential barrier of 1.12 eV. Moreover, the high values of quality factor obtained from I-V analysis suggested a non-ideal behavior of Schottky junction.

  13. Modification of electrical properties of Au/n-type InP Schottky diode with a high-k Ba0.6Sr0.4TiO3 interlayer

    Science.gov (United States)

    Thapaswini, P. Prabhu; Padma, R.; Balaram, N.; Bindu, B.; Rajagopal Reddy, V.

    2016-05-01

    Au/Ba0.6Sr0.4TiO3 (BST)/n-InP metal/insulator/semiconductor (MIS) Schottky diodes have been analyzed by current-voltage (I-V) and capacitance-voltage (C-V) measurements. The surface morphology of the BST films on InP is fairly smooth. The Au/BST/n-InP MIS Schottky diode shows better rectification ratio and low leakage current compared to the conventional Au/n-InP metal-semiconductor (MS) Schottky diode. Higher barrier height is achieved for the MIS Schottky diode compared to the MS Schottky diode. The Norde and Cheung's methods are employed to determine the barrier height, ideality factor and series resistance. The interface state density (NSS) is determined from the forward bias I-V data for both the MS and MIS Schottky diodes. Results reveal that the NSS of the MIS Schottky diode is lower than that of the MS Schottky diode. The Poole-Frenkel emission is found dominating the reverse current in both Au/n-InP MS and Au/BST/n-InP MIS Schottky diodes, indicating the presence of structural defects and trap levels in the dielectric film.

  14. Antibody binding to p-Si using LANL SAM chemistry

    Energy Technology Data Exchange (ETDEWEB)

    Anderson, Aaron S [Los Alamos National Laboratory

    2010-12-06

    This NMSBA-sponsored project involves the attachment of antibodies to polymeric silicon (p-Si) surfaces, with the ultimate goal of attaching antibodies to nanowires for Vista Therapeutics, Inc. (Santa Fe, NM). This presentation describes the functionalization of p-Si surfaces. the activation of terminal carboxylates on these surfaces, the conjugation of antibodies, and the analyses undertaken at each step. The results of this work show that antibody conjugation is possible on p-Si coatings using the well-known EDC/NHS activation chemistry.

  15. Ultraviolet electroluminescence from ZnO /p-Si heterojunctions

    Science.gov (United States)

    Chen, Peiliang; Ma, Xiangyang; Yang, Deren

    2007-03-01

    Nominally undoped ZnO films were deposited by reactive sputtering on the lightly boron-doped (p-) and heavily boron-doped (p+) silicon substrates. The sputtered ZnO films were identified to be highly ⟨002⟩ oriented in crystallinity and n type in electrical conductivity. The current-voltage (I-V) characteristics revealed that the ZnO /p--Si heterojunction exhibited well-defined rectifying behavior while the ZnO /p+-Si heterojunction did not possess rectifying function. As for the ZnO /p+-Si heterojunction, it was electroluminescent to a certain extent in the visible region under sufficient forward bias with the positive voltage on the silicon substrate, while it emitted ultraviolet light characteristics of near-band-edge emission of ZnO under the reverse bias, which significantly dominated the visible emission. In contrast to the ZnO /p+-Si heterojunction, the ZnO /p--Si heterojunction did not exhibit detectable electroluminescence (EL) under either forward or reverse bias. The I-V characteristics and EL mechanism of the above-mentioned heterojunctions have been tentatively explained in terms of the energy-band structures of the heterojunctions.

  16. Tuning the Schottky rectification in graphene-hexagonal boron nitride-molybdenum disulfide heterostructure.

    Science.gov (United States)

    Liu, Biao; Zhao, Yu-Qing; Yu, Zhuo-Liang; Wang, Lin-Zhi; Cai, Meng-Qiu

    2017-12-04

    It was still a great challenge to design high performance of rectification characteristic for the rectifier diode. Lately, a new approach was proposed experimentally to tune the Schottky barrier height (SBH) by inserting an ultrathin insulated tunneling layer to form metal-insulator-semiconductor (MIS) heterostructures. However, the electronic properties touching off the high performance of these heterostructures and the possibility of designing more efficient applications for the rectifier diode were not presently clear. In this paper, the structural, electronic and interfacial properties of the novel MIS diode with the graphene/hexagonal boron nitride/monolayer molybdenum disulfide (GBM) heterostructure had been investigated by first-principle calculations. The calculated results showed that the intrinsic properties of graphene and MoS 2 were preserved due to the weak van der Waals contact. The height of interfacial Schottky barrier can be tuned by the different thickness of hBN layers. In addition, the GBM Schottky diode showed more excellent rectification characteristic than that of GM Schottky diode due to the interfacial band bending caused by the epitaxial electric field. Based on the electronic band structure, we analyzed the relationship between the electronic structure and the nature of the Schottky rectifier, and revealed the potential of utilizing GBM Schottky diode for the higher rectification characteristic devices. Copyright © 2017 Elsevier Inc. All rights reserved.

  17. Influence of nanostructure Fe-doped ZnO interlayer on the electrical properties of Au/n-type InP Schottky structure

    Energy Technology Data Exchange (ETDEWEB)

    Padma, R.; Balaram, N.; Reddy, I. Neelakanta; Reddy, V. Rajagopal, E-mail: reddy_vrg@rediffmail.com

    2016-07-01

    The Au/Fe-doped ZnO/n-InP metal/interlayer/semiconductor (MIS) Schottky structure is fabricated with Fe-doped ZnO nanostructure (NS) as an interlayer. The field emission scanning electron microscopy and atomic force microscopy results demonstrated that the surface morphology of the Fe−ZnO NS on n-InP is fairly smooth. The x-ray diffraction results reveal that the average grain size of the Fe−ZnO film is 12.35 nm. The electrical properties of the Au/n-InP metal-semiconductor (MS) and Au/Fe−ZnO NS/n-InP MIS Schottky structures are investigated by current-voltage and capacitance-voltage measurements at room temperature. The Au/Fe−ZnO NS/n-InP MIS Schottky structure has good rectifying ratio with low-leakage current compared to the Au/n-InP MS structure. The barrier height obtained for the MIS structure is higher than those of MS Schottky structure because of the modification of the effective barrier height by the Fe−ZnO NS interlayer. Further, the barrier height, ideality factor and series resistance are determined for the MS and MIS Schottky structures using Norde and Cheung's functions and compared to each other. The estimated interface state density of MIS Schottky structure is lower than that of MS Schottky structure. Experimental results revealed that the Poole-Frenkel emission is the dominant conduction mechanism in the lower bias region whereas Schottky emission is the dominant in the higher bias region for both the Au/n-InP MS and Au/Fe−ZnO NS/n-InP MIS Schottky structures. - Highlights: • Barrier height of Au/n-InP Schottky diode was modified by Fe−ZnO nanostructure interlayer. • MIS structure has a good rectification ratio compared to the MS structure. • The interface state density of MIS structure is lower than that of MS structure. • Poole-Frenkel mechanism is found to dominate in both MS and MIS structure.

  18. Calculation of the Electronic Parameters of an Al/DNA/p-Si Schottky Barrier Diode Influenced by Alpha Radiation

    Directory of Open Access Journals (Sweden)

    Hassan Maktuff Jaber Al-Ta'ii

    2015-02-01

    Full Text Available Many types of materials such as inorganic semiconductors have been employed as detectors for nuclear radiation, the importance of which has increased significantly due to recent nuclear catastrophes. Despite the many advantages of this type of materials, the ability to measure direct cellular or biological responses to radiation might improve detector sensitivity. In this context, semiconducting organic materials such as deoxyribonucleic acid or DNA have been studied in recent years. This was established by studying the varying electronic properties of DNA-metal or semiconductor junctions when exposed to radiation. In this work, we investigated the electronics of aluminium (Al/DNA/silicon (Si rectifying junctions using their current-voltage (I-V characteristics when exposed to alpha radiation. Diode parameters such as ideality factor, barrier height and series resistance were determined for different irradiation times. The observed results show significant changes with exposure time or total dosage received. An increased deviation from ideal diode conditions (7.2 to 18.0 was observed when they were bombarded with alpha particles for up to 40 min. Using the conventional technique, barrier height values were observed to generally increase after 2, 6, 10, 20 and 30 min of radiation. The same trend was seen in the values of the series resistance (0.5889–1.423 Ω for 2–8 min. These changes in the electronic properties of the DNA/Si junctions could therefore be utilized in the construction of sensitive alpha particle detectors.

  19. Calculation of the Schottky barrier and current–voltage characteristics of metal–alloy structures based on silicon carbide

    Energy Technology Data Exchange (ETDEWEB)

    Altuhov, V. I., E-mail: altukhovv@mail.ru; Kasyanenko, I. S.; Sankin, A. V. [North Caucasian Federal University, Institute of Service, Tourism and Design (Branch) (Russian Federation); Bilalov, B. A. [Dagestan State Technical University (Russian Federation); Sigov, A. S. [Moscow State Technical University of Radio Engineering, Electronics, and Automation (Russian Federation)

    2016-09-15

    A simple but nonlinear model of the defect density at a metal–semiconductor interface, when a Schottky barrier is formed by surface defects states localized at the interface, is developed. It is shown that taking the nonlinear dependence of the Fermi level on the defect density into account leads to a Schottky barrier increase by 15–25%. The calculated barrier heights are used to analyze the current–voltage characteristics of n-M/p-(SiC){sub 1–x}(AlN){sub x} structures. The results of calculations are compared to experimental data.

  20. Temperature activated tunnelling processes in aSe/pSi heterojunction

    African Journals Online (AJOL)

    It is deducted that tunnel hopping of electrons is prevalent in the aSe side while barrier tunneling of holes occur in the pSi of the interface. Recombination of electron and hole becomes predominant at high negative bias due to whole injection into the interface coming from the pSi. Keywords: Temperature, Tunneling ...

  1. Structural and Electrical Properties of Ag/ n-TiO2/ p-Si/Al Heterostructure Fabricated by Pulsed Laser Deposition Technique

    Science.gov (United States)

    Kumar, Arvind; Sharma, K. K.; Kumar, Rajender; Chand, Subhash; Kumar, Ashwani

    2017-11-01

    We have investigated the structural and electrical characteristics of the Ag/ n-TiO2/ p-Si/Al heterostructure. Thin films of pure TiO2 were deposited on p-type silicon (100) by optimized pulsed laser ablation with a KrF-excimer laser in an oxygen-controlled environment. X-ray diffraction analysis showed the formation of crystalline TiO2 film having a tetragonal texture with a strong (210) plane as the preferred direction. High purity aluminium and silver metals were deposited to obtain ohmic contacts on p-Si and n-TiO2, respectively. The current-voltage ( I- V) characteristics of the fabricated heterostructure were studied by using thermionic emission diffusion mechanism over the temperature range of 80-300 K. Parameters such as barrier height and ideality factor were derived from the measured I- V data of the heterostructure. The detailed analysis of I- V measurements revealed good rectifying behavior in the inhomogeneous Ag/ n-TiO2/ p-Si(100)/Al heterostructure. The variations of barrier height and ideality factor with temperature and the non-linearity of the activation energy plot confirmed that barrier heights at the interface follow Gaussian distributions. The value of Richardson's constant was found to be 6.73 × 105 Am-2 K-2, which is of the order of the theoretical value 3.2 × 105 Am-2 K-2. The capacitance-voltage ( C- V) measurements of the heterostructure were investigated as a function of temperature. The frequency dependence (Mott-Schottky plot) of the C- V characteristics was also studied. These measurements indicate the occurrence of a built-in barrier and impurity concentration in TiO2 film. The optical studies were also performed using a UV-Vis spectrophotometer. The optical band gap energy of TiO2 films was found to be 3.60 eV.

  2. Sub-bandgap response of graphene/SiC Schottky emitter bipolar phototransistor examined by scanning photocurrent microscopy

    Science.gov (United States)

    Barker, Bobby G., Jr.; Chava, Venkata Surya N.; Daniels, Kevin M.; Chandrashekhar, M. V. S.; Greytak, Andrew B.

    2018-01-01

    Graphene layers grown epitaxially on SiC substrates are attractive for a variety of sensing and optoelectronic applications because the graphene acts as a transparent, conductive, and chemically responsive layer that is mated to a wide-bandgap semiconductor with large breakdown voltage. Recent advances in control of epitaxial growth and doping of SiC epilayers have increased the range of electronic device architectures that are accessible with this system. In particular, a recently-introduced Schottky-emitter bipolar phototransistor (SEPT) based on an epitaxial graphene (EG) emitter grown on a p-SiC base epilayer has been found to exhibit a maximum common emitter current gain of 113 and a UV responsivity of 7.1 A W‑1. The behavior of this device, formed on an n +-SiC substrate that serves as the collector, was attributed to a very large minority carrier injection efficiency at the EG/p-SiC Schottky contact. This large minority carrier injection efficiency is in turn related to the large built-in potential found at a EG/p-SiC Schottky junction. The high performance of this device makes it critically important to analyze the sub bandgap visible response of the device, which provides information on impurity states and polytype inclusions in the crystal. Here, we employ scanning photocurrent microscopy (SPCM) with sub-bandgap light as well as a variety of other techniques to clearly demonstrate a localized response based on the graphene transparent electrode and an approximately 1000-fold difference in responsivity between 365 nm and 444 nm excitation. A stacking fault propagating from the substrate/epilayer interface, assigned as a single layer of the 8H-SiC polytype within the 4H-SiC matrix, is found to locally increase the photocurrent substantially. The discovery of this polytype heterojunction opens the potential for further development of heteropolytype devices based on the SEPT architecture.

  3. Schottky Noise and Beam Transfer Functions

    Energy Technology Data Exchange (ETDEWEB)

    Blaskiewicz M.; Blaskiewicz M.

    2016-12-01

    Beam transfer functions (BTF)s encapsulate the stability properties of charged particle beams. In general one excites the beam with a sinusoidal signal and measures the amplitude and phase of the beam response. Most systems are very nearly linear and one can use various Fourier techniques to reduce the number of measurements and/or simulations needed to fully characterize the response. Schottky noise is associated with the finite number of particles in the beam. This signal is always present. Since the Schottky current drives wakefields, the measured Schottky signal is influenced by parasitic impedances.

  4. Graphene-GaN Schottky Photodiodes Project

    Data.gov (United States)

    National Aeronautics and Space Administration — Integration of graphene as the top metal on GaN Schottky. This will replace platinum, which is 50% transparent at the desired wavelength, with graphene, which has...

  5. Extremely high magnetic-field sensitivity of charge transport in the Mn/SiO2/p-Si hybrid structure

    Directory of Open Access Journals (Sweden)

    N. V. Volkov

    2017-01-01

    Full Text Available We report on abrupt changes in dc resistance and impedance of a diode with the Schottky barrier based on the Mn/SiO2/p-Si structure in a magnetic field. It was observed that at low temperatures the dc and ac resistances of the device change by a factor of more than 106 with an increase in a magnetic field to 200 mT. The strong effect of the magnetic field is observed only above the threshold forward bias across the diode. The ratios between ac and dc magnetoresistances can be tuned from almost zero to 108% by varying the bias. To explain the diversity of magnetotransport phenomena observed in the Mn/SiO2/p-Si structure, it is necessary to attract several mechanisms, which possibly work in different regions of the structure. The anomalously strong magnetotransport effects are attributed to the magnetic-field-dependent impact ionization in the bulk of a Si substrate. At the same time, the conditions for this process are specified by structure composition, which, in turn, affects the current through each structure region. The effect of magnetic field attributed to suppression of impact ionization via two mechanisms leads to an increase in the carrier energy required for initiation of impact ionization. The first mechanism is related to displacement of acceptor levels toward higher energies relative to the top of the valence band and the other mechanism is associated with the Lorentz forces affecting carrier trajectories between scatterings events. The estimated contributions of these two mechanisms are similar. The proposed structure is a good candidate for application in CMOS technology-compatible magnetic- and electric-field sensors and switching devices.

  6. Structural and Electrical Properties of Ag/n-TiO2/p-Si/Al Heterostructure Fabricated by Pulsed Laser Deposition Technique

    Science.gov (United States)

    Kumar, Arvind; Sharma, K. K.; Kumar, Rajender; Chand, Subhash; Kumar, Ashwani

    2017-07-01

    We have investigated the structural and electrical characteristics of the Ag/n-TiO2/p-Si/Al heterostructure. Thin films of pure TiO2 were deposited on p-type silicon (100) by optimized pulsed laser ablation with a KrF-excimer laser in an oxygen-controlled environment. X-ray diffraction analysis showed the formation of crystalline TiO2 film having a tetragonal texture with a strong (210) plane as the preferred direction. High purity aluminium and silver metals were deposited to obtain ohmic contacts on p-Si and n-TiO2, respectively. The current-voltage (I-V) characteristics of the fabricated heterostructure were studied by using thermionic emission diffusion mechanism over the temperature range of 80-300 K. Parameters such as barrier height and ideality factor were derived from the measured I-V data of the heterostructure. The detailed analysis of I-V measurements revealed good rectifying behavior in the inhomogeneous Ag/n-TiO2/p-Si(100)/Al heterostructure. The variations of barrier height and ideality factor with temperature and the non-linearity of the activation energy plot confirmed that barrier heights at the interface follow Gaussian distributions. The value of Richardson's constant was found to be 6.73 × 105 Am-2 K-2, which is of the order of the theoretical value 3.2 × 105 Am-2 K-2. The capacitance-voltage (C-V) measurements of the heterostructure were investigated as a function of temperature. The frequency dependence (Mott-Schottky plot) of the C-V characteristics was also studied. These measurements indicate the occurrence of a built-in barrier and impurity concentration in TiO2 film. The optical studies were also performed using a UV-Vis spectrophotometer. The optical band gap energy of TiO2 films was found to be 3.60 eV.

  7. Influence of Be doping on the characteristics of CdO/p-Si ...

    Indian Academy of Sciences (India)

    Administrator

    Bull. Mater. Sci., Vol. 37, No. 6, October 2014, pp. 1509–1514. © Indian Academy of Sciences. 1509. Influence of Be doping on the characteristics of CdO/p-Si heterojunction for optoresponse applications. A A DAKHEL. Department of Physics, College of Science, University of Bahrain, P.O. Box 32038, Kingdom of Bahrain.

  8. Temperature dependence of the current-voltage characteristics of Sn/PANI/p-Si/Al heterojunctions

    Energy Technology Data Exchange (ETDEWEB)

    Kaya, M [Graduate School of Natural and Applied Sciences, Department of Physics, Erciyes University, 38039 Kayseri (Turkey); Cetin, H [Faculty of Arts and Sciences, Department of Physics, Bozok University, 66100 Yozgat (Turkey); Boyarbay, B [Graduate School of Natural and Applied Sciences, Department of Physics, Erciyes University, 38039 Kayseri (Turkey); Goek, A [Faculty of Arts and Sciences, Department of Chemistry, Sueleyman Demirel University, 32260 Isparta (Turkey); Ayyildiz, E [Faculty of Arts and Sciences, Department of Physics, Erciyes University, 38039 Kayseri (Turkey)

    2007-10-10

    Sn/PANI/p-Si/Al heterojunctions were fabricated by electropolymerization of aniline on chemically cleaned p-Si substrates. Current-voltage characteristics of Sn/PANI/p-Si/Al heterojunctions measured in the temperature range 140-280 K are presented and analyzed. Although these devices were clearly rectifying, their I-V characteristics were non-ideal, which can be judged from the nonlinearity in the semi-logarithmic plots. The high values of the ideality factor n depending on the sample temperature may be ascribed to a decrease of the exponentially increasing rate in current due to space-charge injection into the PANI thin film at higher forward bias voltages. Careful analysis of the forward bias I-V characteristics on a log-log scale indicates that the space-charge-limited current (SCLC) conduction controlled by an exponential trap distribution above the valence band edge dominates the current transport in the PANI/p-Si diodes at high voltages. Furthermore, the PANI was characterized by using Fourier transform infrared (FTIR) and ultraviolet-visible (UV-vis) spectra.

  9. Electrical and Optical Characterization of Cobalt Doped Nanostructured ZnO/p-Si Heterojunctions

    Science.gov (United States)

    Kaphle, Amrit; Smith, Echo Adcock; Hari, Parameswar; Crunkleton, Daniel; Johannes, Tyler; Otanicar, Todd; Roberts, Kenneth

    In this study we investigated electrical and optical properties of heterojunctions made of cobalt doped ZnO nanorods and Boron doped silicon (p-Si). ZnO nanorods were grown on a seed layer of Zn sputtered on p-Si using a chemical bath deposition technique. Cobalt percentage in the ZnO were varied from 0-20%. Scanning Electron Microscope (SEM) images indicate that the diameter of ZnO nanorods increased with higher cobalt doping. Room temperature photoluminescence shows an increase in the defect peak at 550 nm with increasing doping. Band gap was measured using UV-VIS spectroscopy. In addition, we also performed current-voltage (I-V), capacitance-voltage(C-V) measurements on ZnO/p-Si samples under both dark and illumination conditions. I-V characteristics show good rectifying behavior under dark and illumination conditions. The saturation current, diode ideality factor, carrier concentrations, built in potential, and barrier height were calculated from I-V and C-V measurements. We will discuss the implications of the band gap, I-V, and C-V measurements with variations in cobalt doping concentrations in ZnO/p-Si heterojunctions.

  10. Electrical characterization of DC sputtered ZnO/p-Si heterojunction

    Energy Technology Data Exchange (ETDEWEB)

    Ocak, Yusuf Selim, E-mail: yusufselim@gmail.com [Department of Science, Faculty of Education, Dicle University, Diyarbakir, 21280 (Turkey)

    2012-02-05

    Highlights: Black-Right-Pointing-Pointer DC sputtered ZnO thin films were grown on a p-Si wafer and a glass and their orientation (0 0 2) and optical band gap (3.28 eV) were determined. Black-Right-Pointing-Pointer Electrical parameters of ZnO/p-Si heterojunction such as ideality factor, barrier height and series resistance were calculated as 1.35, 0.76 eV and 6.69 k{Omega} Dot-Operator Black-Right-Pointing-Pointer The effects of light on current-voltage, capacitance-voltage and capacitance-frequency properties of the ZnO/p-Si heterojunction were examined under 100 mW/cm{sup 2} and AM 1.5 illumination conditions. - Abstract: ZnO thin films were formed on a p-Si semiconductor and a glass by DC sputtering technique. The ZnO films were analyzed using UV-vis spectroscopy and X-ray diffraction (XRD). Electrical and photoelectrical parameters of ZnO/p-Si heterojunction were determined by current-voltage (I-V), capacitance-voltage (C-V) and capacitance-frequency (C-f) of the device in dark and under the light with 100 mW/cm{sup 2} and AM 1.5 illumination property. The device had a good rectifying property with 1.35 ideality factor, 0.76 eV barrier height and 6.69 k{Omega} series resistance values. It was seen that I-V, C-V and C-f measurements of the heterojunction had good sensitivity to the light and the device behaves as a photodiode and a photocapacitor.

  11. Preparation of ZnO film on p-Si and I-V characteristics of p-Si/n-ZnO

    Directory of Open Access Journals (Sweden)

    Shampa Mondal

    2013-02-01

    Full Text Available Zinc oxide (ZnO thin films were deposited on p-silicon (Si substrate from ammonium zincate bath following a chemical dipping technique called SILAR. Films in the thickness range 0.5-4.5 µm could be prepared by varying the number of dipping for a fixed concentration (0.125 M of zincate bath and fixed pH (11.00-11.10. Higher values of dipping produced nonadherent and poor quality films. Structural characterization by X-ray diffraction (XRD indicates the formation of polycrystalline single phase ZnO with strong c-axis orientation. The structural characteristics of the films were found to be a sensitive function of film thickness. The degree of orientation was found to be a function of film thickness and a maximum was found at around 2.2 µm. Scanning electron microscopy (SEM reveals the formation of sub-micrometer crystallites on silicon substrate. The coverage of crystallites (grains on substrate surface increases with number of dipping. Dense film containing grains distributed throughout the surface is obtained at large thicknesses. The ohmic nature of silver (Ag on ZnO and Aluminum (Al on p-Si was confirmed by I-V measurements. I-V characteristic of the p-Si/n-ZnO heterojunction was studied and rectification was observed. The maximum value of forward to reverse current ratio was ~15 at 3.0 V.

  12. Schottky barrier MOSFET systems and fabrication thereof

    Science.gov (United States)

    Welch, J.D.

    1997-09-02

    (MOS) device systems-utilizing Schottky barrier source and drain to channel region junctions are disclosed. Experimentally derived results which demonstrate operation of fabricated N-channel and P-channel Schottky barrier (MOSFET) devices, and of fabricated single devices with operational characteristics similar to (CMOS) and to a non-latching (SRC) are reported. Use of essentially non-rectifying Schottky barriers in (MOS) structures involving highly doped and the like and intrinsic semiconductor to allow non-rectifying interconnection of, and electrical accessing of device regions is also disclosed. Insulator effected low leakage current device geometries and fabrication procedures therefore are taught. Selective electrical interconnection of drain to drain, source to drain, or source to source, of N-channel and/or P-channel Schottky barrier (MOSFET) devices formed on P-type, N-type and Intrinsic semiconductor allows realization of Schottky Barrier (CMOS), (MOSFET) with (MOSFET) load, balanced differential (MOSFET) device systems and inverting and non-inverting single devices with operating characteristics similar to (CMOS), which devices can be utilized in modulation, as well as in voltage controlled switching and effecting a direction of rectification. 89 figs.

  13. Design and electrical characterization of Au/Anthracene/p-Si/Al organic/inorganic heterojunction

    Energy Technology Data Exchange (ETDEWEB)

    Al-Ghamdi, Attieh A., E-mail: aaaalghamdi4@kau.edu.sa [Center of Nanotechnology, King Abdulaziz University, Department of Physics, North Jeddah (Saudi Arabia); Nawar, Ahmed M.; El-Tantawy, Farid [Department of Physics, Faculty of Science, Suez Canal University, Ismailia (Egypt); Yaghmour, S.J. [Department of Physics, King Abdulaziz University, North Jeddah (Saudi Arabia); Azam, Ameer [Center of Nanotechnology, King Abdulaziz University, Department of Physics, North Jeddah (Saudi Arabia)

    2015-02-15

    Highlights: • We have successfully fabricated a Au/Anthracene/p-Si/Al organic/inorganic heterojunction. • The calculated series resistance and the shunt resistance of the device were found to be 440 Ω and 1.47 MΩ, respectively. • The Cheung-Cheung and Norde’s models were used to investigate and determine the heterojunction parameters. • Essential junction parameters and performance of heterojunction established a photovoltaic behavior. • Open circuit voltage (V{sub oc}) 0.382 V, short circuit photocurrent (I{sub SC}) 0.72 mA and power conversion efficiency (η) of 4.65%. - Abstract: Hybrid organic/inorganic heterojunction of nanocrystalline Anthracene and p-Si was fabricated by using a conventional thermal evaporation technique. The crystal and molecular structure of the Anthracene thin films were analyzed by means of X-ray diffraction (XRD), and Fourier Transformation-Infra Red (FT-IR) spectroscopy. The morphologies of the Anthracene/p-Si were investigated by scanning electron microscopy (SEM). The dark current-voltage (I-V) characteristics of Au/Anthracene/p-Si/Al heterojunction were investigated at room temperature (293 K). The calculated series resistance and the shunt resistance of the device were found to be 440 Ω and 1.47 MΩ, respectively. The Cheung-Cheung and Norde’s models were used to investigate and determine the heterojunction parameters. The ideality factor and barrier height values of the Au/Anthracene/p-Si/Al diode were obtained to be 1.1 and 0.464 eV, respectively. The dependence of capacitance-voltage (C{sup -2}-V) for the device Anthracene/p-Si was found to be almost linear. Essential junction parameters and performance of heterojunction established a photovoltaic behavior with an open circuit voltage (V{sub oc}) 0.382 V, short circuit photocurrent (I{sub SC}) 0.72 mA and power conversion efficiency (η) of 4.65%.

  14. High detectivity visible-blind SiF4 grown epitaxial graphene/SiC Schottky contact bipolar phototransistor

    Science.gov (United States)

    Chava, Venkata S. N.; Barker, Bobby G.; Balachandran, Anusha; Khan, Asif; Simin, G.; Greytak, Andrew B.; Chandrashekhar, M. V. S.

    2017-12-01

    We report the performance of a bipolar epitaxial graphene (EG)/p-SiC/n+-SiC UV phototransistor fabricated with a Schottky (EG)/SiC junction grown using a SiF4 precursor. The phototransistor showed responsivity as high as 25 A/W at 250 nm in the Schottky emitter (SE) mode. The Schottky collector (SC) mode showed a responsivity of 17 A/W at 270 nm with a visible rejection (270 nm:400 nm)>103. The fastest response was seen in the SC-mode, with 10 ms turn-on and 47 ms turn-off, with a noise equivalent power of 2.3 fW at 20 Hz and a specific detectivity of 4.4 × 1013 Jones. The high responsivity is due to internal gain from bipolar action. We observe additional avalanche gain from the device periphery in the SC-mode by scanning photocurrent microscopy but not in the SE-mode. This high-performance visible-blind photodetector is attractive for advanced applications such as flame detection.

  15. First-principle study of the AlP/Si interfacial adhesion

    Energy Technology Data Exchange (ETDEWEB)

    Dai Hongshang [Key Laboratory of Liquid Structure and Heredity of Materials, Ministry of Education, Shandong University, 73 Jingshi Road, Jinan 250061 (China); Du Jing [School of Science, Shandong Jianzhu University, Jinan 250101 (China); Wang Li; Peng Chuanxiao [Key Laboratory of Liquid Structure and Heredity of Materials, Ministry of Education, Shandong University, 73 Jingshi Road, Jinan 250061 (China); Liu Xiangfa, E-mail: xfliu@sdu.edu.c [Key Laboratory of Liquid Structure and Heredity of Materials, Ministry of Education, Shandong University, 73 Jingshi Road, Jinan 250061 (China); Shandong Binzhou Bohai Piston Co. Ltd., Binzhou 256602, Shandong (China)

    2010-01-15

    AlP is heterogeneous nucleation substrate of primary Si in hypereutectic Al-Si alloys, while studies on the nucleation mechanism at atomic level are absent. The pseudopotential-based DFT calculations have been carried out to investigate the atomic and electronic structure, bonding and adhesion of the AlP/Si interface. In total, eight geometries have been investigated, in which the interfacial stacking sequence is different. The favorable interfaces can be deduced for the reason that adhesive interface energies (W{sub ad}) are different, which cannot be obtained from the traditional mismatch theory. The interfacial density of states and Mulliken population are also investigated. It is found that the main bond between AlP and Si is covalent Al-Si or P-Si bond, accompanying some ionic characteristic.

  16. Abrupt GaP/Si hetero-interface using bistepped Si buffer

    Energy Technology Data Exchange (ETDEWEB)

    Ping Wang, Y., E-mail: yanping.wang@insa-rennes.fr; Kuyyalil, J.; Nguyen Thanh, T.; Almosni, S.; Bernard, R.; Tremblay, R.; Da Silva, M.; Létoublon, A.; Rohel, T.; Tavernier, K.; Le Corre, A.; Cornet, C.; Durand, O. [UMR FOTON, CNRS, INSA Rennes, Rennes F-35708 (France); Stodolna, J.; Ponchet, A. [CEMES-CNRS, Université de Toulouse, 29 rue Jeanne Marvig, BP 94347, 31055 Toulouse Cedex 04 (France); Bahri, M.; Largeau, L.; Patriarche, G. [Laboratoire de Photonique et Nanostructures, CNRS UPR 20, Route de Nozay, Marcoussis 91460 (France); Magen, C. [LMA, INA-ARAID, and Departamento de Física de la Materia Condensada, Universidad de Zaragoza, 50018 Zaragoza (Spain)

    2015-11-09

    We evidence the influence of the quality of the starting Si surface on the III-V/Si interface abruptness and on the formation of defects during the growth of III-V/Si heterogeneous crystal, using high resolution transmission electron microscopy and scanning transmission electron microscopy. GaP layers were grown by molecular beam epitaxy on vicinal Si (001). The strong effect of the Si substrate chemical preparation is first demonstrated by studying structural properties of both Si homoepitaxial layer and GaP/Si heterostructure. It is then shown that choosing adequate chemical preparation conditions and subsequent III-V regrowth conditions enables the quasi-suppression of micro-twins in the epilayer. Finally, the abruptness of GaP/Si interface is found to be very sensitive to the Si chemical preparation and is improved by the use of a bistepped Si buffer prior to III-V overgrowth.

  17. Electrical parameters of metal doped n-CdO/p-Si heterojunction diodes

    Energy Technology Data Exchange (ETDEWEB)

    Umadevi, P. [Department of Physics, Sri Vidya College of Engineering & Technology, Virudhunagar 626005, Tamilnadu (India); Prithivikumaran, N., E-mail: janavi_p@yahoo.com [Nanoscience Research Lab, Department of Physics, VHNSN College, Virudhunagar 626001, Tamilnadu (India)

    2016-11-15

    The CdO, Al doped CdO and Cu doped CdO thin films were coated on p-type silicon substrates by sol–gel spin coating method. The structural, surface morphological and electrical properties of undoped, Al and Cu doped CdO films on silicon substrate were studied. The Ag/CdO/p-Si, Ag/Al: CdO/p-Si and Ag/Cu: CdO/p-Si heterojunction diodes were fabricated and the diode parameters such as reverse saturation current, barrier height and ideality factor of the diodes were investigated by current–voltage (I–V)characteristics. The reverse current of the diode was found to increase strongly with the doping. The values of barrier height and ideality factor were decreased by doping with aluminium and copper. Photo response of the heterojunction diodes was studied and it was found that, the heterojunction diode constructed with the doped CdO has larger Photo response than the undoped heterojunction diode.

  18. Scalable fabrication of nanostructured p-Si/n-ZnO heterojunctions by femtosecond-laser processing

    Science.gov (United States)

    Georgiadou, D. G.; Ulmeanu, M.; Kompitsas, M.; Argitis, P.; Kandyla, M.

    2014-12-01

    We present a versatile, large-scale fabrication method for nanostructured semiconducting junctions. Silicon substrates were processed by femtosecond laser pulses in methanol and a quasi-ordered distribution of columnar nanospikes was formed on the surface of the substrates. A thin (80 nm) layer of ZnO was deposited on the laser-processed silicon surface by pulsed laser deposition, forming a nanostructured p-Si/n-ZnO heterojunction. We characterized the structural, optical, and electrical properties of the heterojunction. Electrical I-V measurements on the nanostructured p-Si/n-ZnO device show non-linear electric characteristics with a diode-like behavior. Electrical I-V measurements on a flat p-Si/n-ZnO reference sample show similar characteristics, however the forward current and rectification ratio are improved by orders of magnitude in the nanostructured device owing to its increased surface area. The fabrication method employed in this work can be extended to other homojunctions or heterojunctions for electronic and optoelectronic devices with large surface area.

  19. Fabrication and characterization of DBM/p-Si heterojunction solar cell

    Energy Technology Data Exchange (ETDEWEB)

    El-Nahass, M.M.; Kamel, M.A. [Physics Department, Faculty of Education, Ain Shams University, Roxy, 11757 Cairo (Egypt); Atta, A.A. [Physics Department, Faculty of Education, Ain Shams University, Roxy, 11757 Cairo (Egypt); Physics Department, Faculty of Science, Taif University, Taif, 888 Taif (Saudi Arabia); Huthaily, S.Y., E-mail: s_huthaily@yahoo.com [Physics Department, Faculty of Education, Hodeidah University, Alduraihimi, 3114 Hodeidah (Yemen)

    2013-01-15

    Hybrid organic/inorganic solar cell was fabricated by depositing a thin film of p-N,N dimethylaminobenzylidenemalononitrile (DBM) onto p-Si substrate. DBM is a donor-acceptor disubstituted benzenes dye known as molecular rotors and highly polar molecular compounds. Its powder has a polycrystalline structure, while nano-crystallite rods are formed in the as-deposited film. The dark current density-voltage (J-V) characteristics of Au/DBM/p-Si/Al heterojunction device measured at different temperatures ranging from 291 to 353 K have been investigated. The operating conduction mechanisms, the series and shunt resistances, the rectification ratio, the ideality factor, the effective barrier height, and the total trap concentration were determined. The capacitance-voltage (C-V) characteristics indicated that the junction is of abrupt nature. The built-in voltage and the carrier concentration distributed through the depletion region were estimated. Under illumination, the DBM/p-Si cell showed photovoltaic properties and the photovoltaic parameters were evaluated. -- Highlights: Black-Right-Pointing-Pointer The molecular rotors DBM dye can be used to manufacture D/A solar cells. Black-Right-Pointing-Pointer Since D/A are situated in the DBM molecule, we ensure photoinduced D {yields} A electron transfer. Black-Right-Pointing-Pointer The DBM film is grown as nano-rods. Black-Right-Pointing-Pointer The most of the DBM bulk of the cell contributes to the generation of external current.

  20. 15.3%-Efficient GaAsP Solar Cells on GaP/Si Templates

    Energy Technology Data Exchange (ETDEWEB)

    Vaisman, Michelle [National Renewable Energy Laboratory (NREL), Golden, CO (United States); Perl, Emmett [National Renewable Energy Laboratory (NREL), Golden, CO (United States); Fan, Shizhao [University of Illinois Urbana-Champaign; Yaung, Kevin Nay [Yale University; Martin-Martin, Diego [Universidad Rey Juan Carlos; Yu, Zhengshan J. [Arizona State University; Leilaeioun, Mehdi [Arizona State University; Holman, Zachary C. [Arizona State University; Lee, Minjoo L. [University of Illinois Urbana-Champaign

    2017-07-26

    As single-junction Si solar cells approach their practical efficiency limits, a new pathway is necessary to increase efficiency in order to realize more cost-effective photovoltaics. Integrating III-V cells onto Si in a multijunction architecture is a promising approach that can achieve high efficiency while leveraging the infrastructure already in place for Si and III-V technology. In this Letter, we demonstrate a record 15.3%-efficient 1.7 eV GaAsP top cell on GaP/Si, enabled by recent advances in material quality in conjunction with an improved device design and a high-performance antireflection coating. We further present a separate Si bottom cell with a 1.7 eV GaAsP optical filter to absorb most of the visible light with an efficiency of 6.3%, showing the feasibility of monolithic III-V/Si tandems with >20% efficiency. Through spectral efficiency analysis, we compare our results to previously published GaAsP and Si devices, projecting tandem GaAsP/Si efficiencies of up to 25.6% based on current state-of-the-art individual subcells. With the aid of modeling, we further illustrate a realistic path toward 30% GaAsP/Si tandems for high-efficiency, monolithically integrated photovoltaics.

  1. Fabrication and characterization of Pd/Cu doped ZnO/Si and Ni/Cu doped ZnO/Si Schottky diodes

    Energy Technology Data Exchange (ETDEWEB)

    Agarwal, Lucky; Singh, Brijesh Kumar; Tripathi, Shweta [Department of Electronics & Communication Engineering, Motilal Nehru National Institute of Technology, Allahabad 211004 (India); Chakrabarti, P., E-mail: pchakrabarti.ece@iitbhu.ac.in [Department of Electronics & Communication Engineering, Motilal Nehru National Institute of Technology, Allahabad 211004 (India); Department of Electronics Engineering, Indian Institute of Technology (Banaras Hindu University), Varanasi 221005 (India)

    2016-08-01

    In this paper, fabrication and characterization of copper doped ZnO (Cu doped ZnO) based Schottky devices have been reported. Cu doped ZnO thin films have been deposited on p-Si (100) samples by the sol-gel spin coating method. X-Ray diffraction (XRD) and atomic force microscopy (AFM) studies have been done in order to evaluate the structural and morphological properties of the film. The optical properties of the film have been determined by using variable angle ellipsometry. Further, Seebeck measurement of the deposited Cu doped ZnO film leads to positive Seebeck coefficient confirming the p-type conductivity of the sample. The resistivity and acceptor concentration of the film has also been evaluated using four probe measurement system. Pd and Ni metals have been deposited on separate Cu doped ZnO thin film samples using low cost thermal evaporation method to form Schottky contacts. The electrical characterization of the Schottky diode has been performed by semiconductor device analyzer (SDA). Electrical parameters such as barrier height, ideality factor, reverse saturation current and rectification ratio have also been determined for the as-prepared Schottky diode using conventional thermionic emission model and Cheung's method. - Highlights: • Fabrication of sol-gel derived Cu doped ZnO (p-type) Schottky contact proposed. • The p-type Conductivity of the sample confirmed by Seebeck Measurement. • Pd and Ni deposited on Cu doped ZnO film to form Schottky contacts. • Cu doped ZnO expected to emerge as a potential material for thin film solar cells.

  2. Espacion de mis reflejos: pinturas

    OpenAIRE

    Abuixech vila, Noelia

    2014-01-01

    Es una serie de siete autorretratos a modo de análisis de la propia identidad de la artista. A través de su pintura refleja los estados anímicos y físicos de ella misma. Transmite diferentes actitudes como optimismo y pesimismo, reflexión, paz interior, estabilidad, sensualidad o orgullo. Cada cuadro es el resultado de la simpleza de las formas planas y neutras que la definen. La técnica es acrílica. Abuixech Vila, N. (2014). Espacion de mis reflejos: pinturas. http://hdl.handle.net/10251/...

  3. Schottky contacts to In2O3

    Directory of Open Access Journals (Sweden)

    H. von Wenckstern

    2014-04-01

    Full Text Available n-type binary compound semiconductors such as InN, InAs, or In2O3 are especial because the branch-point energy or charge neutrality level lies within the conduction band. Their tendency to form a surface electron accumulation layer prevents the formation of rectifying Schottky contacts. Utilizing a reactive sputtering process in an oxygen-containing atmosphere, we demonstrate Schottky barrier diodes on indium oxide thin films with rectifying properties being sufficient for space charge layer spectroscopy. Conventional non-reactive sputtering resulted in ohmic contacts. We compare the rectification of Pt, Pd, and Au Schottky contacts on In2O3 and discuss temperature-dependent current-voltage characteristics of Pt/In2O3 in detail. The results substantiate the picture of oxygen vacancies being the source of electrons accumulating at the surface, however, the position of the charge neutrality level and/or the prediction of Schottky barrier heights from it are questioned.

  4. Performance assessment of nanoscale Schottky MOSFET as ...

    Indian Academy of Sciences (India)

    pp. 511–520. Performance assessment of nanoscale Schottky MOSFET as resonant tunnelling device: Non-equilibrium Green's function formalism ... 2School of Electrical and Computer Engineering, University of Tehran, Tehran, Iran. *Corresponding author. E-mail: z.ahangari@iausr.ac.ir. MS received 2 January 2013; ...

  5. Stochastic Cooling with Schottky Band Overlap

    Energy Technology Data Exchange (ETDEWEB)

    Lebedev, Valeri; /Fermilab

    2005-12-01

    Optimal use of stochastic cooling is essential to maximize the antiproton stacking rate for Tevatron Run II. Good understanding and characterization of the cooling is important for the optimization. The paper is devoted to derivation of the Fokker-Planck equations justified in the case of near or full Schottky base overlap for both longitudinal and transverse coolings.

  6. Schottky contacts to In2O3

    Science.gov (United States)

    von Wenckstern, H.; Splith, D.; Schmidt, F.; Grundmann, M.; Bierwagen, O.; Speck, J. S.

    2014-04-01

    n-type binary compound semiconductors such as InN, InAs, or In2O3 are especial because the branch-point energy or charge neutrality level lies within the conduction band. Their tendency to form a surface electron accumulation layer prevents the formation of rectifying Schottky contacts. Utilizing a reactive sputtering process in an oxygen-containing atmosphere, we demonstrate Schottky barrier diodes on indium oxide thin films with rectifying properties being sufficient for space charge layer spectroscopy. Conventional non-reactive sputtering resulted in ohmic contacts. We compare the rectification of Pt, Pd, and Au Schottky contacts on In2O3 and discuss temperature-dependent current-voltage characteristics of Pt/In2O3 in detail. The results substantiate the picture of oxygen vacancies being the source of electrons accumulating at the surface, however, the position of the charge neutrality level and/or the prediction of Schottky barrier heights from it are questioned.

  7. Influence of 12 MeV electron irradiation on the electrical and photovoltaic properties of Schottky type solar cell based on Carmine

    Energy Technology Data Exchange (ETDEWEB)

    Aydogan, S., E-mail: saydogan@atauni.edu.t [Atatuerk University, Science Faculty, Department of Physics, Erzurum (Turkey); Tueruet, A. [Atatuerk University, Science Faculty, Department of Physics, Erzurum (Turkey)

    2011-08-15

    A Schottky diode with configuration Au/Carmine/p-Si/Al has been fabricated and it has been seen that the thin film on the p-Si substrate has exhibited a good rectifying behavior. The current-voltage (I-V) characteristics of the device have been investigated in dark before electron irradiation and under white light illumination and after 12 MeV electron irradiation with fluency of 3x10{sup 12} e{sup -}/cm{sup 2}. It has been seen that the device is sensitive to illumination and to electron irradiation. The barrier height value has decreased under illumination. The ideality factor and series resistance values have increased by 12 MeV electron irradiation. Furthermore, it has also seen that the reverse bias current and capacitance of the device have decreased after electron irradiation. This has been attributed to decrease in net ionized dopant concentration with electron irradiation.

  8. The effect of Gd doping on the electrical and photoelectrical properties of Gd:ZnO/p-Si heterojunctions

    Energy Technology Data Exchange (ETDEWEB)

    Baturay, Silan [Department of Physics, Faculty of Science, Dicle University, 21280 Diyarbakir (Turkey); Ocak, Yusuf Selim, E-mail: yusufselim@gmail.com [Department of Science, Faculty of Education, Dicle University, 21280 Diyarbakir (Turkey); Science and Technology Application and Research Center, Dicle University, 21280 Diyarbakir (Turkey); Kaya, Derya [Department of Physics, Institute of Natural Applied Sciences, Dicle University, 21280 Diyarbakir (Turkey)

    2015-10-05

    Highlights: • Undoped and Gd doped ZnO thin films were deposited onto p-Si semiconductor. • The Gd:ZnO/p-Si heterojunctions were compared with undoped ZnO/p-Si heterojunction. • A strong effect of Gd doping on the performance of the devices were reported. - Abstract: Undoped ZnO thin films, as well as 1%, 3% and 5% Gd-doped ZnO films, were deposited on p-type Si using spin coating. The structural properties of these thin films were analysed using X-ray diffraction, and the current–voltage (I–V) and capacitance–voltage (C–V) characteristics of the Gd:ZnO/p-Si heterojunctions were compared with those of the undoped ZnO/p-Si heterojunctions. We found that Gd doping had a strong effect on the performance of the devices, and that the Gd:ZnO/p-Si heterojunctions formed with 1% Gd-doped ZnO were the most strongly rectifying, and had the highest barrier height and the lowest series resistance. Furthermore, the I–V measurements of the 1% Gd-doped ZnO/p-Si heterojunction exhibited the strongest response to light.

  9. Extended analysis of the frequency dependence of the admittance of MIS structures with pulsed-laser-deposited AlN films

    Energy Technology Data Exchange (ETDEWEB)

    Simeonov, S; Bakalova, S; Szekeres, A; Kafedjiijska, E [Georgi Nadjakov Institute of Solid State Physics, Bulgarian Academy of Sciences, 72 Tzarigradsko Chaussee, 1784 Sofia (Bulgaria); Grigorescu, S; Socol, G; Mihailescu, I N [Lasers Department, National Institute for Lasers, Plasma and Radiation Physics, PO Box MG-54, RO-77125, Bucharest-Magurele (Romania)], E-mail: sbakalova@issp.bas.bg

    2008-05-01

    MIS structures with AlN films deposited on p-Si by pulsed laser deposition were prepared and admittance measurements were carried out in the frequency range of 100 Hz - 10 MHz. The density of traps in the AlN film and at the AlN/Si interface was evaluated using the electrical characteristics obtained, and the hopping mechanism of charge transport was determined from the dispersion of the a.c. conductance.

  10. Mis sa tast kiusad : elatiivne komponent mis-konstruktsioonides / Renate Pajusalu

    Index Scriptorium Estoniae

    Pajusalu, Renate, 1963-

    2006-01-01

    Vaadeldakse küsisõnaga mis algavat küsilauset, mis pragmaatiliselt väljendab keeldu või väidet tegevuse mõttetuse kohta. Täpsemalt elatiivsest (seestütlevast) komponendist mis-algulistes küsilausetes

  11. Characterization of photovoltaics with In2S3 nanoflakes/p-Si heterojunction

    OpenAIRE

    Hsiao, Yu-Jen; Lu, Chung-Hsin; Ji, Liang-Wen; Meen, Teen-Hang; Chen, Yan-Lung; Chi, Hsiao-Ping

    2014-01-01

    We demonstrate that heterojunction photovoltaics based on hydrothermal-grown In2S3 on p-Si were fabricated and characterized in the paper. An n-type In2S3 nanoflake-based film with unique 'cross-linked network’ structure was grown on the prepared p-type silicon substrate. It was found that the bandgap energy of such In2S3 film is 2.5 eV by optical absorption spectra. This unique nanostructure significantly enhances the surface area of the In2S3 films, leading to obtain lower reflectance spect...

  12. Junction parameters and characterization of Au/n-Ge15In5Se80/p-Si/Al heterojunction

    Science.gov (United States)

    El-Nahass, M. M.; Ali, M. H.; El-Shazly, E. A. A.; Zedan, I. T.

    2016-08-01

    The analysis of the electrical properties of Au/n-Ge15In5Se80/p-Si/Al heterojunction is examined. I- V characteristics show diode-like behavior. The series resistance is found to decrease with increasing the temperature in three different methods of calculations. The thermionic emission mechanism is found to be the operating mechanism at relatively low forward voltages ( V characteristics of Au/n-Ge15In5Se80/p-Si/Al heterojunction are also investigated. The I- V curve of the Au/n-Ge15In5Se80/p-Si/Al heterojunction in the dark and after illumination is clarified.

  13. Barrier Parameters and Current Transport Characteristics of Ti/ p-InP Schottky Junction Modified Using Orange G (OG) Organic Interlayer

    Science.gov (United States)

    Sreenu, K.; Venkata Prasad, C.; Rajagopal Reddy, V.

    2017-10-01

    A Ti/Orange G/ p-InP metal/interlayer/semiconductor (MIS) junction has been prepared with Orange G (OG) organic layer by electron beam evaporation and spin coating processes. The electrical properties of Ti/ p-InP metal/semiconductor (MS) and Ti/OG/ p-InP MIS junctions have been analyzed based on current-voltage ( I- V) and capacitance-voltage ( C- V) characteristics. The MIS junction exhibited higher rectifying behavior than the MS junction. The higher barrier height (BH) of the MIS junction compared with the MS junction indicates effective modification by the OG layer. Also, the BH, ideality factor, shunt resistance, and series resistance were extracted based on the I- V characteristic, Cheung's and Norde's methods, and the ΨS- V plot. The BH evaluated by Cheung's and Norde's methods and the ΨS- V plot was shown to be similar, confirming the reliability and validity of the methods applied. The extracted interface state density ( N SS) of the MIS junction was less than for the MS junction, revealing that the OG organic layer reduced the N SS value. Analysis demonstrated that, in the lower bias region, the reverse current conduction mechanism was dominated by Poole-Frenkel emission for both the MS and MIS junction. Meanwhile, in the higher bias region, Schottky emission governed the reverse current conduction mechanism. The results suggest that such OG layers have potential for use in high-quality electronic devices.

  14. Meeldis. Mõjus. Mis edasi? / Mati Unt

    Index Scriptorium Estoniae

    Unt, Mati, 1944-2005

    2004-01-01

    Artiklis räägitakse peamiselt Evald Hermaküla lavastusest "Tuul Olümposelt tuhka tõi" (Eesti Draamateater, 1986), mis pakkus Mati Undile toona viimase aja suurima teatrielamuse, aga ka sellest, et teatrisemiootikud pole senini saavutanud üksmeelt, mis on ikkagi etenduse segment

  15. Schottky diodes from 2D germanane

    Energy Technology Data Exchange (ETDEWEB)

    Sahoo, Nanda Gopal; Punetha, Vinay Deep [Nanoscience and Nanotechnology Centre, Department of Chemistry, Kumaun University, Nainital, 263001 Uttarakhand (India); Esteves, Richard J; Arachchige, Indika U. [Department of Chemistry, Virginia Commonwealth University, Richmond, Virginia 23284 (United States); Pestov, Dmitry [Nanomaterials Core Characterization Center, Virginia Commonwealth University, Richmond, Virginia 23284 (United States); McLeskey, James T., E-mail: JamesMcLeskey@rmc.edu [Department of Physics, Randolph-Macon College, Ashland, Virginia 23005 (United States)

    2016-07-11

    We report on the fabrication and characterization of a Schottky diode made using 2D germanane (hydrogenated germanene). When compared to germanium, the 2D structure has higher electron mobility, an optimal band-gap, and exceptional stability making germanane an outstanding candidate for a variety of opto-electronic devices. One-atom-thick sheets of hydrogenated puckered germanium atoms have been synthesized from a CaGe{sub 2} framework via intercalation and characterized by XRD, Raman, and FTIR techniques. The material was then used to fabricate Schottky diodes by suspending the germanane in benzonitrile and drop-casting it onto interdigitated metal electrodes. The devices demonstrate significant rectifying behavior and the outstanding potential of this material.

  16. Electrochemical and structural properties of electroless Ni-P-SiC nanocomposite coatings

    Energy Technology Data Exchange (ETDEWEB)

    Farzaneh, Amir [Department of Materials Science and Engineering, Faculty of Engineering, Shahid Bahonar University of Kerman (Iran, Islamic Republic of); Department of Materials Science and Engineering, Faculty of Mechanical Engineering, University of Tabriz (Iran, Islamic Republic of); Mohammadi, Maysam, E-mail: maysam.mohammadi84@gmail.com [High Technology and Environmental Sciences, International Center for Science, Materials Research Institute, Kerman (Iran, Islamic Republic of); Ehteshamzadeh, Maryam [Department of Materials Science and Engineering, Faculty of Engineering, Shahid Bahonar University of Kerman (Iran, Islamic Republic of); High Technology and Environmental Sciences, International Center for Science, Materials Research Institute, Kerman (Iran, Islamic Republic of); Mohammadi, Farzad [Department of Materials Engineering, The University of British Columbia, Vancouver, BC (Canada)

    2013-07-01

    Silicon carbide (SiC) nanoparticles were co-deposited with nickel-phosphorous (Ni-P) coatings through electroless deposition process. The effects of annealing temperature and SiC contents on properties of the coatings were investigated. Corrosion performance of the coatings was examined using potentiodynamic polarization and electrochemical impedance spectroscopy (EIS). X-ray diffraction and Scanning Electron Microscopy (SEM) were employed for structural and morphological studies, respectively. It was shown that the structure of the as-deposited Ni-P-SiC nanocomposite coating was amorphous, and changed to the nickel crystal, nickel phosphide (Ni{sub 3}P) and silicide compounds (Ni{sub x}Si{sub y}) with heat treatment. Addition of the SiC concentration in the coating bath affected both composition and morphology of the coating. Presence of SiC nanoparticles in the Ni-P coating enhanced the corrosion resistance of the coating. Higher SiC contents, however, negatively affected the corrosion behavior of the coatings. Heat treatment also improved the corrosion resistance of the Ni-P-SiC coating. Annealing at 400 °C decreased the corrosion current density of the coating by approximately 60%.

  17. Characterization of photovoltaics with In2S3 nanoflakes/p-Si heterojunction.

    Science.gov (United States)

    Hsiao, Yu-Jen; Lu, Chung-Hsin; Ji, Liang-Wen; Meen, Teen-Hang; Chen, Yan-Lung; Chi, Hsiao-Ping

    2014-01-15

    We demonstrate that heterojunction photovoltaics based on hydrothermal-grown In2S3 on p-Si were fabricated and characterized in the paper. An n-type In2S3 nanoflake-based film with unique 'cross-linked network' structure was grown on the prepared p-type silicon substrate. It was found that the bandgap energy of such In2S3 film is 2.5 eV by optical absorption spectra. This unique nanostructure significantly enhances the surface area of the In2S3 films, leading to obtain lower reflectance spectra as the thickness of In2S3 film was increased. Additionally, such a nanostructure resulted in a closer spacing between the cross-linked In2S3 nanostructures and formed more direct conduction paths for electron transportation. Thus, the short-circuit current density (Jsc) was effectively improved by using a suitable thickness of In2S3. The power conversion efficiency (PCE, η) of the AZO/In2S3/textured p-Si heterojunction solar cell with 100-nm-thick In2S3 film was 2.39%.

  18. Liaison, Schottky Problem and Invariant Theory

    CERN Document Server

    Alonso, Maria Emilia; Mallavibarrena, Raquel; Sols, Ignacio

    2010-01-01

    This volume is a homage to the memory of the Spanish mathematician Federico Gaeta (1923-2007). Apart from a historical presentation of his life and interaction with the classical Italian school of algebraic geometry, the volume presents surveys and original research papers on the mathematics he studied. Specifically, it is divided into three parts: linkage theory, Schottky problem and invariant theory. On this last topic a hitherto unpublished article by Federico Gaeta is also included.

  19. Schottky Barriers in Bilayer Phosphorene Transistors.

    Science.gov (United States)

    Pan, Yuanyuan; Dan, Yang; Wang, Yangyang; Ye, Meng; Zhang, Han; Quhe, Ruge; Zhang, Xiuying; Li, Jingzhen; Guo, Wanlin; Yang, Li; Lu, Jing

    2017-04-12

    It is unreliable to evaluate the Schottky barrier height (SBH) in monolayer (ML) 2D material field effect transistors (FETs) with strongly interacted electrode from the work function approximation (WFA) because of existence of the Fermi-level pinning. Here, we report the first systematical study of bilayer (BL) phosphorene FETs in contact with a series of metals with a wide work function range (Al, Ag, Cu, Au, Cr, Ti, Ni, and Pd) by using both ab initio electronic band calculations and quantum transport simulation (QTS). Different from only one type of Schottky barrier (SB) identified in the ML phosphorene FETs, two types of SBs are identified in BL phosphorene FETs: the vertical SB between the metallized and the intact phosphorene layer, whose height is determined from the energy band analysis (EBA); the lateral SB between the metallized and the channel BL phosphorene, whose height is determined from the QTS. The vertical SBHs show a better consistency with the lateral SBHs of the ML phosphorene FETs from the QTS compared than that of the popular WFA. Therefore, we develop a better and more general method than the WFA to estimate the lateral SBHs of ML semiconductor transistors with strongly interacted electrodes based on the EBA for its BL counterpart. In terms of the QTS, n-type lateral Schottky contacts are formed between BL phosphorene and Cr, Al, and Cu electrodes with electron SBH of 0.27, 0.31, and 0.32 eV, respectively, while p-type lateral Schottky contacts are formed between BL phosphorene and Pd, Ti, Ni, Ag, and Au electrodes with hole SBH of 0.11, 0.18, 0.19, 0.20, and 0.21 eV, respectively. The theoretical polarity and SBHs are in good agreement with available experiments. Our study provides an insight into the BL phosphorene-metal interfaces that are crucial for designing the BL phosphorene device.

  20. Schizosaccharomyces pombe centromere protein Mis19 links Mis16 and Mis18 to recruit CENP-A through interacting with NMD factors and the SWI/SNF complex.

    Science.gov (United States)

    Hayashi, Takeshi; Ebe, Masahiro; Nagao, Koji; Kokubu, Aya; Sajiki, Kenichi; Yanagida, Mitsuhiro

    2014-07-01

    CENP-A is a centromere-specific variant of histone H3 that is required for accurate chromosome segregation. The fission yeast Schizosaccharomyces pombe and mammalian Mis16 and Mis18 form a complex essential for CENP-A recruitment to centromeres. It is unclear, however, how the Mis16-Mis18 complex achieves this function. Here, we identified, by mass spectrometry, novel fission yeast centromere proteins Mis19 and Mis20 that directly interact with Mis16 and Mis18. Like Mis18, Mis19 and Mis20 are localized at the centromeres during interphase, but not in mitosis. Inactivation of Mis19 in a newly isolated temperature-sensitive mutant resulted in CENP-A delocalization and massive chromosome missegregation, whereas Mis20 was dispensable for proper chromosome segregation. Mis19 might be a bridge component for Mis16 and Mis18. We isolated extragenic suppressor mutants for temperature-sensitive mis18 and mis19 mutants and used whole-genome sequencing to determine the mutated sites. We identified two groups of loss-of-function suppressor mutations in non-sense-mediated mRNA decay factors (upf2 and ebs1), and in SWI/SNF chromatin-remodeling components (snf5, snf22 and sol1). Our results suggest that the Mis16-Mis18-Mis19-Mis20 CENP-A-recruiting complex, which is functional in the G1-S phase, may be counteracted by the SWI/SNF chromatin-remodeling complex and non-sense-mediated mRNA decay, which may prevent CENP-A deposition at the centromere. © 2014 The Authors Genes to Cells © 2014 by the Molecular Biology Society of Japan and Wiley Publishing Asia Pty Ltd.

  1. Revised diode equation for Ideal Graphene-Semiconductor Schottky Junction

    OpenAIRE

    Liang, Shi-Jun; Ang, Lay Kee

    2015-01-01

    In this paper we carry out a theoretical and experimental study of the nature of graphene/semiconductor Schottky contact. We present a simple and parameter-free carrier transport model of graphene/semiconductor Schottky contact derived from quantum statistical theory, which is validated by the quantum Landauer theory and first-principle calculations. The proposed model can well explain experimental results for samples of different types of graphene/semiconductor Schottky contact.

  2. Deforming super Riemann surfaces with gravitinos and super Schottky groups

    Energy Technology Data Exchange (ETDEWEB)

    Playle, Sam [Dipartimento di Fisica, Università di Torino and INFN, Sezione di Torino,Via P. Giuria 1, I-10125 Torino (Italy)

    2016-12-12

    The (super) Schottky uniformization of compact (super) Riemann surfaces is briefly reviewed. Deformations of super Riemann surface by gravitinos and Beltrami parameters are recast in terms of super Schottky group cohomology. It is checked that the super Schottky group formula for the period matrix of a non-split surface matches its expression in terms of a gravitino and Beltrami parameter on a split surface. The relationship between (super) Schottky groups and the construction of surfaces by gluing pairs of punctures is discussed in an appendix.

  3. Effects of sputtering power Schottky metal layers on rectifying performance of Mo-SiC Schottky contacts

    Science.gov (United States)

    Lee, Seula; Lee, Jinseon; You, Sslimsearom; Kyoung, Sinsu; Kim, Kyung Hwan

    2016-01-01

    In this study, Schottky barrier diodes based on silicon carbide with various levels of Schottky metal layer input power were prepared and characterized. In this structure, molybdenum and aluminum were employed as the Schottky metal and top electrode, respectively. Schottky metal layers were deposited with input power ranging from 30 to 210 W. Schottky metal layers and top electrodes were deposited with a thickness of 3000 Å. The Schottky barrier heights, series resistances, and ideality factor were calculated from current-voltage (I-V) curves obtained using the Cheung-Cheung and Norde methods. All deposition processes were conducted using a facing targets sputtering system. Turn on voltage was minimized when the input power was 90 W, at which point electrical characteristics were observed to have properties superior to those at other levels of input power.

  4. MIS - An alternative for the dissipation equation

    Science.gov (United States)

    Aupoix, B.; Cousteix, J.; Liandrat, J.

    The application of the spectral integral method (French designation MIS), an extension of the model proposed by Comte-Bellot and Corrsin (1966) and Reynolds (1974), to the evaluation of dissipation phenomena in turbulent flows is described and demonstrated. The basic assumptions of the model are reviewed, and consideration is given to decaying turbulence, flows with energy production, and low-Re flows. The predictions of the MIS dissipation equation are then compared with experimental data in graphs, and the accuracy of an MIS model without tuned coefficients is shown to be equal to that of standard tuned dissipation equations for homogeneous strained or weakly sheared flows and superior for strongly sheared flows.

  5. Theoretical studies on the solar cell parameters of n-C/p-Si heterojunction

    Energy Technology Data Exchange (ETDEWEB)

    Gupta, B.; Shishodia, P.K.; Kapoor, A.; Mehra, R.M. [Department of Electronic Science, University of Delhi, South Campus, Benito Juarez Road, 110021 New Delhi (India); Krishna, K.M.; Umeno, M. [Research Center for Microstructure Devices, Nagoya Institute of Technology, 466 8555 Nagoya (Japan); Soga, T.; Jimbo, T. [Department of Environmental Technology and Urban Planning, Nagoya Institute of Technology, 466 8555 Nagoya (Japan)

    2002-01-01

    Amorphous carbon (a-C) is a potential material for the development of low cost solar cells. The heterojunction n-C/p-Si solar cell has been recently developed by Krishna et al. It has been shown that the maximum quantum efficiency (25%) appears at wavelength {lambda} (600 nm). In the present work, theoretical quantum efficiency has been calculated taking into account the contribution of hole photocurrent density, electron photocurrent density and the photocurrent within the depletion region. The variation of quantum efficiency with wavelength is found to be qualitatively similar to the experimentally observed variation. The solar cell parameters namely V{sub oc}, I{sub sc}, FF and efficiency have also been calculated and compared with the experimental values.

  6. Mis on rahuks vaja? / Harri Mõtsnik

    Index Scriptorium Estoniae

    Mõtsnik, Harri, 1928-2013

    1984-01-01

    Sisu : Mis on patt?; Ainult armust; Ainult usust;Vabadus ja tõde; Eesti rahva armukatsumisaeg; Ustavus ja valvsus; Jumal ja mammona; Eesti isesesvusele mõeldes; Elu matkatee; Elagem rahus; Õiglus ja kohus; Piiblist

  7. West Bank Gaza Geo-MIS System

    Data.gov (United States)

    US Agency for International Development — The Geo-MIS System is USAID/West Bank and Gaza's primary system for capturing and managing projectrelated information. Its purpose is to assist USAID and its...

  8. Mis kasu on disclaimerist? / Eneken Tikk

    Index Scriptorium Estoniae

    Tikk, Eneken, 1976-

    2003-01-01

    Terminiga disclaimer tähistatakse avaldust, millega selle tegija soovib end teatavas ulatuses vastatusest vabastada. Käesoleva artikli puhul tegemist veebiarendajate ja saidiomanike sooviga end vastutusest vabastada, mis puudutab nende vastu esitatavaid hagisid

  9. Strain effects of InP/Si and InP/porous Si studied by spectroscopic ellipsometry

    Science.gov (United States)

    Lajnef, M.; Ben Sedrine, N.; Harmand, J. C.; Travers, L.; Ezzaouia, H.; Chtourou, R.

    2008-05-01

    In this work, we study the optical interband transitions of InP on silicon (InP/Si) and on porous silicon (InP/PSi) substrates grown by molecular beam epitaxy (MBE). Spectroscopic ellipsometry for photon energies from 2 to 5 eV is used to determine the InP/Si and InP/PSi complex refractive index and thickness. Bruggeman effective medium approximation (EMA) associated to the Cauchy model are used to model the experimental ellipsometric data. We have found that the E1 and E1 + Δ 1 transition energies of InP/Si and InP/PSi shift to low energies compared to bulk InP. This effect is interpreted as a result of the strain relaxation of the InP layers grown respectively on Si and porous Si substrates.

  10. Accumulation, release and turnover of nutrients (C-N-P-Si) by the blue mussel Mytilus edulis under oligotrophic conditions

    NARCIS (Netherlands)

    Jansen, H.M.; Strand, O.; Verdegem, M.C.J.; Smaal, A.C.

    2012-01-01

    To evaluate the potential role of mussels in nutrient cycling in oligotrophic fjord ecosystems, we applied a multiple-element (C-N-P-Si) approach considering several physiological processes (excretion, tissue composition, biodeposition) simultaneously. The study covered one annual cycle, reflecting

  11. Study of System Pressure Dependence on n-TiO2/p-Si Hetrostructure for Photovoltaic Applications

    Directory of Open Access Journals (Sweden)

    S. Ramezani Sani

    2015-01-01

    Full Text Available This study reports the fabrication of n-TiO2/p-Si hetrojunction by deposition of TiO2nanowires on p-Si substrate. The effect of system pressure and the current-voltage (I-V characteristics of n-TiO2/p-si hetrojunction were studied. The morphology of the samples was investigated by Field Emission Scanning Electron Microscopy (FESEM which confirms formation of TiO2 nanowires that their diameters increase with increasing the pressure of system. The I-V characteristics were measured to investigate the hetrojunction effects of under forward and reverse biases at different system pressure by sweeping in the voltage from 0 to +6 V, then to -6 V, and finally reaching 0 V. TiO2/Si diodes   in the system pressure 60 mbar and 30 mbar indicated that a p-n junction formed in the n-TiO2/p-Si hetrojunction. But as the system pressure increased to 1000 mbar, the I-V characteristics became inversed. This treatment can be scribed by the change of the energy band structure of TiO2.

  12. Schottky-contact plasmonic rectenna for biosensing

    Science.gov (United States)

    Alavirad, Mohammad; Siadat Mousavi, Saba; Roy, Langis; Berini, Pierre

    2013-10-01

    We propose a plasmonic gold nanodipole array on silicon, forming a Schottky contact thereon, and covered by water. The behavior of this array under normal excitation has been extensively investigated. Trends have been found and confirmed by identification of the mode propagating in nanodipoles and its properties. This device can be used to detect infrared radiation below the bandgap energy of the substrate via internal photoelectric effect (IPE). Also we estimate its responsivity and detection limit. Finally, we assess the potential of the structure for bulk and surface (bio) chemical sensing. Based on modal results an analytical model has been proposed to estimate the sensitivity of the device. Results show a good agreement between numerical and analytical interpretations.

  13. Supersensitive, Fast-Response Nanowire Sensors by Using Schottky Contacts

    KAUST Repository

    Hu, Youfan

    2010-05-31

    A Schottky barrier can be formed at the interface between a metal electrode and a semiconductor. The current passing through the metal-semiconductor contact is mainly controlled by the barrier height and barrier width. In conventional nanodevices, Schottky contacts are usually avoided in order to enhance the contribution made by the nanowires or nanotubes to the detected signal. We present a key idea of using the Schottky contact to achieve supersensitive and fast response nanowire-based nanosensors. We have illustrated this idea on several platforms: UV sensors, biosensors, and gas sensors. The gigantic enhancement in sensitivity of up to 5 orders of magnitude shows that an effective usage of the Schottky contact can be very beneficial to the sensitivity of nanosensors. © 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  14. Failure Analysis of Heavy-Ion-Irradiated Schottky Diodes

    Science.gov (United States)

    Casey, Megan C.; Lauenstein, Jean-Marie; Wilcox, Edward P.; Topper, Alyson D.; Campola, Michael J.; Label, Kenneth A.

    2017-01-01

    In this work, we use high- and low-magnitude optical microscope images, infrared camera images, and scanning electron microscope images to identify and describe the failure locations in heavy-ion-irradiated Schottky diodes.

  15. Study of Reduced Graphene Oxide for Trench Schottky Diode

    Science.gov (United States)

    Samihah Khairir, Nur; Rofei Mat Hussin, Mohd; Nasir, Iskhandar Md; Mukhter Uz-Zaman, A. S. M.; Fazlida Hanim Abdullah, Wan; Sabirin Zoolfakar, Ahmad

    2015-11-01

    This paper presents the study of reduced Graphene Oxide (RGO) for trench Schottky diode by replacing conventional metal layer that forms schottky contact with a nanostructured carbon thin film via Reduced Graphene Oxide (RGO) technique. The RGO was synthesis by chemical exfoliation in which modified Hummer's method was approached. It was then deposited on the trench schottky pattern substrate by pressurized spray coating. The sample was then characterized by FESEM, Raman Spectroscopy and I-V test. The results of FESEM and Raman showed good characteristics and well deposited nanostructures of RGO flakes. The two-point I-V test showed that the samples have a low turn-on voltage and a higher break-down voltage, which is better than the conventional schottky diode used in the market.

  16. Destructive Single-Event Failures in Schottky Diodes

    Science.gov (United States)

    Casey, Megan C.; Lauenstein, Jean-Marie; Gigliuto, Robert A.; Wilcox, Edward P.; Phan, Anthony M.; Kim, Hak; Chen, Dakai; LaBel, Kenneth A.

    2014-01-01

    This presentation contains test results for destructive failures in DC-DC converters. We have shown that Schottky diodes are susceptible to destructive single-event effects. Future work will be completed to identify parameter that determines diode susceptibility.

  17. Summary of LHC MD:377: Schottky pick-up

    CERN Document Server

    Betz, Michael; Lefevre, Thibaut; CERN. Geneva. ATS Department

    2015-01-01

    The main objective of this MD was to record Schottky spectra under well known machine conditions. In summary, 7 set-points for the chromaticity and 8 for the emittance have been established and Schottky spectra have been recorded for each setting. The data will be used to benchmark and develop different fitting algorithms. This note presents the initial attempt of curve-fitting and discusses its shortcomings.

  18. Hokimatsh, mis muutis maailma / Paul Goble

    Index Scriptorium Estoniae

    Goble, Paul Alan, 1949-

    2005-01-01

    Mart Laari koostatud PÖFFi filmiprogrammist "külma sõja" ajal läänes loodud filmidest, mis kõige teravamalt näitavad nõukogude süsteemi inimvaenulikkust - "Kõige keelatumad". Teemaga seoses lähemalt Gavin O'Connori filmist "Ime" ("Miracle") : Ameerika Ühendriigid 2004

  19. Mis on mustad kirjutised? / Maie Tuulik

    Index Scriptorium Estoniae

    Tuulik, Maie, 1941-

    2011-01-01

    Mustad kirjutised on Cambridge'i ja Oxfordi kirjandusteadlaste kriitilised kirjutised sõjajärgsetel aastatel Inglismaal poolehoidu pälvinud informaalse kooli ohtudest. Eesti praegustest kasvatusseisukohtadest ja haridusteooriatest, milles domineerib lapsekesksus, mis paraku ei vii soovitud eesmärkideni

  20. Vale, mis ei taha surra / Urmas Kiil

    Index Scriptorium Estoniae

    Kiil, Urmas

    2005-01-01

    Juuditar Hadassa Ben-Itto raamatu "Vale, mis ei taha surra" (The Lie That Wouldn't Die: the Protocols of the Elders of Zion) sünniloost. Autor, kes oli Iisraelis kõrge kohtunik, loobus oma karjäärist, et tuua avalikkuse ette tõde XX sajandil palju surma külvanud plagiaadist "Siioni tarkade protokollid"

  1. Improved insulator layer for MIS devices

    Science.gov (United States)

    Miller, W. E.

    1980-01-01

    Insulating layer of supersonic conductor such as LaF sub 3 has been shown able to impart improved electrical properties to photoconductive detectors and promises to improve other metal/insulator/semiconductor (MIS) devices, e.g., MOSFET and integrated circuits.

  2. Exploring Pair Programming Benefits for MIS Majors

    Directory of Open Access Journals (Sweden)

    April H. Reed

    2016-12-01

    Full Text Available Pair programming is a collaborative programming practice that places participants in dyads, working in tandem at one computer to complete programming assignments. Pair programming studies with Computer Science (CS and Software Engineering (SE majors have identified benefits such as technical productivity, program/design quality, academic performance, and increased satisfaction for their participants. In this paper, pair programming is studied with Management Information Systems (MIS majors, who (unlike CS and SE majors taking several programming courses typically take only one programming course and often struggle to develop advanced programming skills within that single course. The researchers conducted two pair programming experiments in an introductory software development course for MIS majors over three semesters to determine if pair programming could enhance learning for MIS students. The program results, researchers’ direct observations, and participants’ responses to a survey questionnaire were analyzed after each experiment. The results indicate that pair programming appears to be beneficial to MIS students’ technical productivity and program design quality, specifically the ability to create programs using high-level concepts. Additionally, results confirmed increased student satisfaction and reduced frustration, as the pairs worked collaboratively to produce a program while actively communicating and enjoying the process.

  3. Mis on hirvlaste kurtumushaigus? / Olga Piirik

    Index Scriptorium Estoniae

    Piirik, Olga

    2016-01-01

    Hirvlaste krooniline kurtumushaigus kuulub närvikude kahjustavate ja surmaga lõppevate haiguste gruppi. Selliseid haiguse esineb nii inimestel kui loomadel. Teaduslikult nimetatakse neid transmissiivseteks spongiformseteks entsefalopaatiateks ehk TSE-deks. Haiguse tekitaja on nakkuslik valguosake ehk prioon, mis nakatumise järel põhjustab käsnjat ajukahjustumist

  4. Electrical properties and transport mechanisms of Au/Ba0.6Sr0.4TiO3/GaN metal-insulator-semiconductor (MIS) diode at high temperature range

    Science.gov (United States)

    Rajagopal Reddy, V.

    2016-05-01

    The electrical and transport mechanisms of a fabricated Au/Ba0.6Sr0.4TiO3 (BST)/GaN metal-insulator-semiconductor (MIS) diode have been studied in the temperature range of 280-430 K by current-voltage ( I- V) and capacitance-voltage ( C- V) measurements. The barrier heights (BHs) of the Au/BST/GaN MIS diode are found to be 0.85 eV ( I- V)/1.35 ( C- V) at 280 K and 1.14 eV ( I- V)/1.17 ( C- V) at 430 K. The series resistance ( R S) values determined by Cheung's functions are in good agreement with each other. The difference between BHs estimated by I- V and C- V methods are also discussed. Results show that the estimated interface state density ( N SS) of MIS diode decreases with an increase in temperature. Observations have indicated that the BH increases whereas ideality factor R S and N SS decreases with increasing temperature. Results have demonstrated that the reverse leakage current is dominated by Poole-Frenkel emission at temperatures of 280-340 K and by Schottky emission at temperatures of 370-430 K. It is also noted that there is a transition of the conduction mechanism in Au/BST/GaN MIS diode from Poole-Frenkel to Schottky emission at temperatures of 340-370 K.

  5. The MIS 11 – MIS 1 analogy, southern European vegetation, atmospheric methane and the

    Directory of Open Access Journals (Sweden)

    P. C. Tzedakis

    2010-03-01

    Full Text Available Marine Isotope Stage (MIS 11 has been considered a potential analogue for the Holocene and its future evolution. However, a dichotomy has emerged over the precise chronological alignment of the two intervals, with one solution favouring a synchronization of the precession signal and another of the obliquity signal. The two schemes lead to different implications over the natural length of the current interglacial and the underlying causes of the evolution of greenhouse gas concentrations. Here, the close coupling observed between changes in southern European tree populations and atmospheric methane concentrations in previous interglacials is used to evaluate the natural vs. anthropogenic contribution to Holocene methane emissions and assess the two alignment schemes. Comparison of the vegetation trends in MIS 1 and MIS 11 favours a precessional alignment, which would suggest that the Holocene is nearing the end of its natural course. This, combined with the divergence between methane concentrations and temperate tree populations after 5 kyr BP, provides some support for the notion that the Holocene methane trend may be anomalous compared to previous interglacials. In contrast, comparison of MIS 1 with MIS 19, which may represent a closer astronomical analogue than MIS 11, leads to substantially different conclusions on the projected natural duration of the current interglacial and the extent of the anthropogenic contribution to the Holocene methane budget. As answers vary with the choice of analogue, resolution of these issues using past interglacials remains elusive.

  6. Development of n-ZnO/p-Si single heterojunction solar cell with and without interfacial layer

    Science.gov (United States)

    Hussain, Babar

    The conversion efficiency of conventional silicon (Si) photovoltaic cells has not been improved significantly during last two decades but their cost decreased dramatically during this time. However, the higher price-per-watt of solar cells is still the main bottleneck in their widespread use for power generation. Therefore, new materials need to be explored for the fabrication of solar cells potentially with lower cost and higher efficiency. The n-type zinc oxide (n-ZnO) and p-type Si (p-Si) based single heterojunction solar cell (SHJSC) is one of the several attempts to replace conventional Si single homojunction solar cell technology. There are three inadequacies in the literature related to n-ZnO/p-Si SHJSC: (1) a detailed theoretical analysis to evaluate potential of the solar cell structure, (2) inconsistencies in the reported value of open circuit voltage (VOC) of the solar cell, and (3) lower value of experimentally achieved VOC as compared to theoretical prediction based on band-bending between n-ZnO and p-Si. Furthermore, the scientific community lacks consensus on the optimum growth parameters of ZnO. In this dissertation, I present simulation and experimental results related to n-ZnO/p-Si SHJSC to fill the gaps mentioned above. Modeling and simulation of the solar cell structure are performed using PC1D and AFORS-HET software taking practical constraints into account to explore the potential of the structure. Also, unnoticed benefits of ZnO in solar cells such as an additional antireflection (AR) effect and low temperature deposition are highlighted. The growth parameters of ZnO using metal organic chemical vapor deposition and sputtering are optimized. The structural, optical, and electrical characterization of ZnO thin films grown on sapphire and Si substrates is performed. Several n-ZnO/p-Si SHJSC devices are fabricated to confirm the repeatability of the VOC. Moreover, the AR effect of ZnO while working as an n-type layer is experimentally verified

  7. The Development of Ultraviolet Light Emitting Diodes on p-SiC Substrates

    Science.gov (United States)

    Brummer, Gordon

    Ultraviolet (UV) light emitting diodes (LEDs) are promising light sources for purification, phototherapy, and resin curing applications. Currently, commercial UV LEDs are composed of AlGaN-based n-i-p junctions grown on sapphire substrates. These devices suffer from defects in the active region, inefficient p-type doping, and poor light extraction efficiency. This dissertation addresses the development of a novel UV LED device structure, grown on p-SiC substrates. In this device structure, the AlGaN-based intrinsic (i) and n-layers are grown directly on the p-type substrate, forming a p-i-n junction. The intrinsic layer (active region) is composed of an AlN buffer layer followed by three AlN/Al0.30Ga0.70N quantum wells. After the intrinsic layer, the n-layer is formed from n-type AlGaN. This device architecture addresses the deficiencies of UV LEDs on sapphire substrates while providing a vertical device geometry, reduced fabrication complexity, and improved thermal management. The device layers were grown by molecular beam epitaxy (MBE). The material properties were optimized by considering varying growth conditions and by considering the role of the layer within the device. AlN grown at 825 C and with a Ga surfactant yielded material with screw dislocation density of 1x10 7 cm-2 based on X-ray diffraction (XRD) analysis. AlGaN alloys grown in this work contained compositional inhomogeneity, as verified by high-resolution XRD, photoluminescence, and absorption measurements. Based on Stokes shift measurements, the degree of compositional inhomogeneity was correlated with the amount of excess Ga employed during growth. Compositional inhomogeneity yields carrier localizing potential fluctuations, which are advantages in light emitting device layers. Therefore, excess Ga growth conditions were used to grow AlN/Al0.30Ga0.70N quantum wells (designed using a wurtzite k.p model) with 35% internal quantum efficiency. Potential fluctuations limit the mobility of carriers

  8. High Voltage GaN Schottky Rectifiers

    Energy Technology Data Exchange (ETDEWEB)

    CAO,X.A.; CHO,H.; CHU,S.N.G.; CHUO,C.-C.; CHYI,J.-I.; DANG,G.T.; HAN,JUNG; LEE,C.-M.; PEARTON,S.J.; REN,F.; WILSON,R.G.; ZHANG,A.P.

    1999-10-25

    Mesa and planar GaN Schottky diode rectifiers with reverse breakdown voltages (V{sub RB}) up to 550V and >2000V, respectively, have been fabricated. The on-state resistance, R{sub ON}, was 6m{Omega}{center_dot} cm{sup 2} and 0.8{Omega}cm{sup 2}, respectively, producing figure-of-merit values for (V{sub RB}){sup 2}/R{sub ON} in the range 5-48 MW{center_dot}cm{sup -2}. At low biases the reverse leakage current was proportional to the size of the rectifying contact perimeter, while at high biases the current was proportional to the area of this contact. These results suggest that at low reverse biases, the leakage is dominated by the surface component, while at higher biases the bulk component dominates. On-state voltages were 3.5V for the 550V diodes and {ge}15 for the 2kV diodes. Reverse recovery times were <0.2{micro}sec for devices switched from a forward current density of {approx}500A{center_dot}cm{sup -2} to a reverse bias of 100V.

  9. Mis on mee sees? / Liisa Puusepp

    Index Scriptorium Estoniae

    Puusepp, Liisa, 1980-

    2017-01-01

    Õietolmuanalüüsi kasutuselevõtust meetodina möödub tänavu 100 aastat. Õietolmuanalüüsiga saab kindlaks määrata, mis taimede õietolmuterad mees leiduvad ning korjeala. Tallinna Ülikooli ökoloogia keskuses rakendatakse õietolmuanalüüsi eelkõige mineviku taimkatte struktuuri, maakasutuse muutuse ja maastiku avatuse rekonstrueerimiseks, lisaks tehakse ka mee õietolmuanalüüsi

  10. Temperature-Dependent Electrical Properties and Carrier Transport Mechanisms of TMAH-Treated Ni/Au/Al2O3/GaN MIS Diode

    Science.gov (United States)

    Reddy, M. Siva Pratap; Puneetha, Peddathimula; Reddy, V. Rajagopal; Lee, Jung-Hee; Jeong, Seong-Hoon; Park, Chinho

    2016-11-01

    The temperature-dependent electrical properties and carrier transport mechanisms of tetramethylammonium hydroxide (TMAH)-treated Ni/Au/Al2O3/GaN metal-insulator-semiconductor (MIS) diodes have been investigated by current-voltage ( I- V) and capacitance-voltage ( C- V) measurements. The experimental results reveal that the barrier height ( I- V) increases whereas the ideality factor decreases with increasing temperature. The TMAH-treated Ni/Au/Al2O3/GaN MIS diode showed nonideal behaviors which indicate the presence of a nonuniform distribution of interface states ( N SS) and effect of series resistance ( R S). The obtained R S and N SS were found to decrease with increasing temperature. Furthermore, it was found that different transport mechanisms dominated in the TMAH-treated Ni/Au/Al2O3/GaN MIS diode. At 150 K to 250 K, Poole-Frenkel emission (PFE) was found to be responsible for the reverse leakage, while Schottky emission (SE) was the dominant mechanism at high electric fields in the temperature range from 300 K to 400 K. Feasible energy band diagrams and possible carrier transport mechanisms for the TMAH-treated Ni/Au/Al2O3/GaN MIS diode are discussed based on PFE and SE.

  11. Recent Progress in Ohmic/Schottky-Contacted ZnO Nanowire Sensors

    National Research Council Canada - National Science Library

    Zhao, Xiaoli; Zhou, Ranran; Hua, Qilin; Dong, Lin; Yu, Ruomeng; Pan, Caofeng

    2015-01-01

      We review the recent progress of zinc oxide (ZnO) nanowire sensors with ohmic-contacted and Schottky-contacted configurations and the enhancement of the performances of Schottky-contacted ZnO NW sensors (SCZNSs...

  12. Gigantic Enhancement in Sensitivity Using Schottky Contacted Nanowire Nanosensor

    KAUST Repository

    Wei, Te-Yu

    2009-12-09

    A new single nanowire based nanosensor is demonstrated for illustrating its ultrahigh sensitivity for gas sensing. The device is composed of a single ZnO nanowire mounted on Pt electrodes with one end in Ohmic contact and the other end in Schottky contact. The Schottky contact functions as a "gate" that controls the current flowing through the entire system. By tuning the Schottky barrier height through the responsive variation of the surface chemisorbed gases and the amplification role played by the nanowire to Schottky barrier effect, an ultrahigh sensitivity of 32 000% was achieved using the Schottky contacted device operated in reverse bias mode at 275 °C for detection of 400 ppm CO, which is 4 orders of magnitude higher than that obtained using an Ohmic contact device under the same conditions. In addition, the response time and reset time have been shortened by a factor of 7. The methodology and principle illustrated in the paper present a new sensing mechanism that can be readily and extensively applied to other gas sensing systems. © 2009 American Chemical Society.

  13. Fabrication of n-ZnO/ p-Si (100) and n-ZnO:Al/ p-Si (100) Heterostructures and Study of Current-Voltage, Capacitance-Voltage and Room-Temperature Photoluminescence

    Science.gov (United States)

    Shah, M. A. H.; Khan, M. K. R.; Tanveer Karim, A. M. M.; Rahman, M. M.; Kamruzzaman, M.

    2018-01-01

    Heterojunction diodes of n-ZnO/ p-Si (100) and n-ZnO:Al/ p-Si (100) were fabricated by spray pyrolysis technique. X-ray diffraction (XRD), energy dispersive x-ray spectroscopy (EDX), and field emission scanning electron microscopy (FESEM) were used to characterize the as-prepared samples. The XRD pattern indicates the hexagonal wurzite structure of zinc oxide (ZnO) and Al-doped ZnO (AZO) thin films grown on Si (100) substrate. The compositional analysis by EDX indicates the presence of Al in the AZO structure. The FESEM image indicates the smooth and compact surface of the heterostructures. The current-voltage characteristics of the heterojunction confirm the rectifying diode behavior at different temperatures and illumination intensities. For low forward bias voltage, the ideality factors were determined to be 1.24 and 1.38 for un-doped and Al-doped heterostructures at room temperature (RT), respectively, which indicates the good diode characteristics. The capacitance-voltage response of the heterojunctions was studied for different oscillation frequencies. From the 1/ C 2- V plot, the junction built-in potentials were found 0.30 V and 0.40 V for un-doped and Al-doped junctions at RT, respectively. The differences in built-in potential for different heterojunctions indicate the different interface state densities of the junctions. From the RT photoluminescence (PL) spectrum of the n-ZnO/ p-Si (100) heterostructure, an intense main peak at near band edge (NBE) 378 nm (3.28 eV) and weak deep-level emissions (DLE) centered at 436 nm (2.84 eV) and 412 nm (3.00 eV) were observed. The NBE emission is attributed to the radiative recombination of the free and bound excitons and the DLE results from the radiative recombination through deep level defects.

  14. Fabrication of n-ZnO/p-Si (100) and n-ZnO:Al/p-Si (100) Heterostructures and Study of Current-Voltage, Capacitance-Voltage and Room-Temperature Photoluminescence

    Science.gov (United States)

    Shah, M. A. H.; Khan, M. K. R.; Tanveer Karim, A. M. M.; Rahman, M. M.; Kamruzzaman, M.

    2017-10-01

    Heterojunction diodes of n-ZnO/p-Si (100) and n-ZnO:Al/p-Si (100) were fabricated by spray pyrolysis technique. X-ray diffraction (XRD), energy dispersive x-ray spectroscopy (EDX), and field emission scanning electron microscopy (FESEM) were used to characterize the as-prepared samples. The XRD pattern indicates the hexagonal wurzite structure of zinc oxide (ZnO) and Al-doped ZnO (AZO) thin films grown on Si (100) substrate. The compositional analysis by EDX indicates the presence of Al in the AZO structure. The FESEM image indicates the smooth and compact surface of the heterostructures. The current-voltage characteristics of the heterojunction confirm the rectifying diode behavior at different temperatures and illumination intensities. For low forward bias voltage, the ideality factors were determined to be 1.24 and 1.38 for un-doped and Al-doped heterostructures at room temperature (RT), respectively, which indicates the good diode characteristics. The capacitance-voltage response of the heterojunctions was studied for different oscillation frequencies. From the 1/C 2-V plot, the junction built-in potentials were found 0.30 V and 0.40 V for un-doped and Al-doped junctions at RT, respectively. The differences in built-in potential for different heterojunctions indicate the different interface state densities of the junctions. From the RT photoluminescence (PL) spectrum of the n-ZnO/p-Si (100) heterostructure, an intense main peak at near band edge (NBE) 378 nm (3.28 eV) and weak deep-level emissions (DLE) centered at 436 nm (2.84 eV) and 412 nm (3.00 eV) were observed. The NBE emission is attributed to the radiative recombination of the free and bound excitons and the DLE results from the radiative recombination through deep level defects.

  15. High-performance single CdS nanowire (nanobelt) Schottky junction solar cells with Au/graphene Schottky electrodes.

    Science.gov (United States)

    Ye, Yu; Dai, Yu; Dai, Lun; Shi, Zujin; Liu, Nan; Wang, Fei; Fu, Lei; Peng, Ruomin; Wen, Xiaonan; Chen, Zhijian; Liu, Zhongfan; Qin, Guogang

    2010-12-01

    High-performance single CdS nanowire (NW) as well as nanobelt (NB) Schottky junction solar cells were fabricated. Au (5 nm)/graphene combined layers were used as the Schottky contact electrodes to the NWs (NBs). Typical as-fabricated NW solar cell shows excellent photovoltaic behavior with an open circuit voltage of ∼0.15 V, a short circuit current of ∼275.0 pA, and an energy conversion efficiency of up to ∼1.65%. The physical mechanism of the combined Schottky electrode was discussed. We attribute the prominent capability of the devices to the high-performance Schottky combined electrode, which has the merits of low series resistance, high transparency, and good Schottky contact to the CdS NW (NB). Besides, a promising site-controllable patterned graphene transfer method, which has the advantages of economizing graphene material and free from additional etching process, was demonstrated in this work. Our results suggest that semiconductor NWs (NBs) are promising materials for novel solar cells, which have potential application in integrated nano-optoelectronic systems.

  16. Richardson-Schottky transport mechanism in ZnS nanoparticles

    Directory of Open Access Journals (Sweden)

    Hassan Ali

    2016-05-01

    Full Text Available We report the synthesis and electrical transport mechanism in ZnS semiconductor nanoparticles. Temperature dependent direct current transport measurements on the compacts of ZnS have been performed to investigate the transport mechanism for temperature ranging from 300 K to 400 K. High frequency dielectric constant has been used to obtain the theoretical values of Richardson-Schottky and Poole-Frenkel barrier lowering coefficients. Experimental value of the barrier lowering coefficient has been calculated from conductance-voltage characteristics. The experimental value of barrier lowering coefficient βexp lies close to the theoretical value of Richardson-Schottky barrier lowering coefficient βth,RS showing Richardson-Schottky emission has been responsible for conduction in ZnS nanoparticles for the temperature range studied.

  17. Richardson-Schottky transport mechanism in ZnS nanoparticles

    Science.gov (United States)

    Ali, Hassan; Khan, Usman; Rafiq, M. A.; Falak, Attia; Narain, Adeela; Jing, Tang; Xu, Xiulai

    2016-05-01

    We report the synthesis and electrical transport mechanism in ZnS semiconductor nanoparticles. Temperature dependent direct current transport measurements on the compacts of ZnS have been performed to investigate the transport mechanism for temperature ranging from 300 K to 400 K. High frequency dielectric constant has been used to obtain the theoretical values of Richardson-Schottky and Poole-Frenkel barrier lowering coefficients. Experimental value of the barrier lowering coefficient has been calculated from conductance-voltage characteristics. The experimental value of barrier lowering coefficient βexp lies close to the theoretical value of Richardson-Schottky barrier lowering coefficient βth,RS showing Richardson-Schottky emission has been responsible for conduction in ZnS nanoparticles for the temperature range studied.

  18. Spatial inhomogeneous barrier heights at graphene/semiconductor Schottky junctions

    Science.gov (United States)

    Tomer, Dushyant

    Graphene, a semimetal with linear energy dispersion, forms Schottky junction when interfaced with a semiconductor. This dissertation presents temperature dependent current-voltage and scanning tunneling microscopy/spectroscopy (STM/S) measurements performed on graphene Schottky junctions formed with both three and two dimensional semiconductors. To fabricate Schottky junctions, we transfer chemical vapor deposited monolayer graphene onto Si- and C-face SiC, Si, GaAs and MoS2 semiconducting substrates using polymer assisted chemical method. We observe three main type of intrinsic spatial inhomogeneities, graphene ripples, ridges and semiconductor steps in STM imaging that can exist at graphene/semiconductor junctions. Tunneling spectroscopy measurements reveal fluctuations in graphene Dirac point position, which is directly related to the Schottky barrier height. We find a direct correlation of Dirac point variation with the topographic undulations of graphene ripples at the graphene/SiC junction. However, no such correlation is established at graphene/Si and Graphene/GaAs junctions and Dirac point variations are attributed to surface states and trapped charges at the interface. In addition to graphene ripples and ridges, we also observe atomic scale moire patterns at graphene/MoS2 junction due to van der Waals interaction at the interface. Periodic topographic modulations due to moire pattern do not lead to local variation in graphene Dirac point, indicating that moire pattern does not contribute to fluctuations in electronic properties of the heterojunction. We perform temperature dependent current-voltage measurements to investigate the impact of topographic inhomogeneities on electrical properties of the Schottky junctions. We observe temperature dependence in junction parameters, such as Schottky barrier height and ideality factor, for all types of Schottky junctions in forward bias measurements. Standard thermionic emission theory which assumes a perfect

  19. Silver-Rutile Schottky Diode Fabricated on Oxidized Titanium Foil

    Energy Technology Data Exchange (ETDEWEB)

    Rahbarpour, Saeedeh; Purahmad, Mohsen, E-mail: s.rahbarpour@ee.kntu.ac.ir, E-mail: m.purahmad@ee.kntu.ac.ir [Electrical Engineering Department, K.N. Toosi University of Technology, Tehran (Iran, Islamic Republic of)

    2011-02-15

    The fabrication and characterization of a gas sensing Ag-TiO2 Schottky diode are reported. The fabricated Ag-TiO2-Ti structure, formed by sintering silver nanoparticles on the thermally oxidized titanium foil, demonstrated I-V characteristics of a typical Schottky diode at elevated temperatures up to 500 deg. C. The I-V characteristics of these devices strongly depended on the concentration level of the reducing gas contaminants in the surrounding atmosphere. The samples performed like high-barrier Schottky diodes in clean air, while behaved as ohmic contacts in highly reducing atmospheres. Different concentration levels of the examined alcohol vapours could increase the reverse current of the diodes up to 5 orders of magnitude. The measured electronic features of the device were described via an energy band diagram model.

  20. TCAD analysis of graphene silicon Schottky junction solar cell

    Science.gov (United States)

    Kuang, Yawei; Liu, Yushen; Ma, Yulong; Xu, Jing; Yang, Xifeng; Feng, Jinfu

    2015-08-01

    The performance of graphene based Schottky junction solar cell on silicon substrate is studied theoretically by TCAD Silvaco tools. We calculate the current-voltage curves and internal quantum efficiency of this device at different conditions using tow dimensional model. The results show that the power conversion efficiency of Schottky solar cell dependents on the work function of graphene and the physical properties of silicon such as thickness and doping concentration. At higher concentration of 1e17cm-3 for n-type silicon, the dark current got a sharp rise compared with lower doping concentration which implies a convert of electron emission mechanism. The biggest fill factor got at higher phos doping predicts a new direction for higher performance graphene Schottky solar cell design.

  1. Simulation and measurement of the resonant Schottky pickup

    Science.gov (United States)

    Zang, Yong-Dong; Wu, Jun-Xia; Zhao, Tie-Cheng; Zhang, Sheng-Hu; Mao, Rui-Shi; Xu, Hu-Shan; Sun, Zhi-Yu; Ma, Xin-Wen; Tu, Xiao-Lin; Xiao, Guo-Qing; Nolden, F.; Hülsmann, P.; Yu., A. Litvinov; Peschke, C.; Petri, P.; S. Sanjari, M.; Steck, M.

    2011-12-01

    A resonant Schottky pickup with high sensitivity, built by GSI, will be used for nuclear mass and lifetime measurement at CSRe. The basic concepts of Schottky noise signals, a brief introduction of the geometry of the detector, the transient response of the detector, and MAFIA simulated and perturbation measured results of characteristics are presented in this paper. The resonant frequency of the pickup is about 243 MHz and can be slightly changed at a range of 3 MHz. The unloaded quality factor is about 1072 and the shunt impedance is 76 kΩ. The measured results of the characteristics are in agreement with the MAFIA simulations.

  2. Improved performance of Schottky diodes on pendeoepitaxial gallium nitride

    Science.gov (United States)

    Zheleva, T.; Derenge, M.; Ewing, D.; Shah, P.; Jones, K.; Lee, U.; Robins, L.

    2008-09-01

    We designed experiments to investigate the role of dislocation density on the performance of Schottky diodes fabricated on a GaN material grown conventionally and by pendeo-epitaxy. Devices of varying geometries were fabricated on low defect density GaN regions grown selectively via pendeo-epitaxy. In addition, corresponding devices were fabricated on the conventional GaN material with a high density of dislocations. Schottky diodes fabricated on pendeo-material showed nearly two orders of magnitude lower leakage current and displayed improved ideality factor, while diodes built on a conventional material displayed nonideal characteristics.

  3. Effect of illumination intensity and temperature on the I-V characteristics of n-C/p-Si heterojunction

    Energy Technology Data Exchange (ETDEWEB)

    Gupta, Babita; Shishodia, P.K.; Kapoor, A.; Mehra, R.M. [Department of Electronic Science, University of Delhi South Campus, Benito Juarez Road, 110021 New Delhi (India); Soga, Tetsuo; Jimbo, Takashi [Department of Environmental Technology and Urban Planning, Nagoya Institute of Technology, 466-8555 Nagoya (Japan); Umeno, Masayoshi [Research Center for Microstructure Devices, Nagoya Institute of Technology, 466-8555 Nagoya (Japan)

    2002-07-01

    Krishna et al. (Sol. Energy Mater. Sol. Cells 65 (2001) 163) have recently developed an heterojunction n-C/p-Si in order to achieve low cost and high-efficiency carbon solar cell. It has been shown that for this structure, the maximum quantum efficiency (25%) appears at wavelength {lambda} (600nm). In this paper, the dependence of I-V characteristics of this heterojunction solar cell on illumination intensity and temperature has been systematically investigated. An estimation of the stability of the solar cell with temperature has been made in terms of the temperature coefficient of I{sub sc} and V{sub oc}. The intensity variation study has been used to estimate the series resistance R{sub s} of the solar cell. The effect of illumination intensity on I-V of n-C/p-Si heterojunction is more complex because the carrier lifetime and the carrier mobility of amorphous carbon are small and also because drift of carriers by built-in electric field plays an important role in these cells. Therefore, the conventional analytical expression for I-V characteristic is not applicable to such solar cells. These structures will not obey the principle of superposition of illuminated and dark current. The experimental results have been analysed by developing empirical relation for I-V.The temperature sensitivity parameters {alpha}, the change in I{sub sc} and {beta}, the change in V{sub oc} per degree centigrade have been computed and are found to be 0.087mA/C and 1mV/C, respectively. This suggests that the heterojunction n-C/p-Si has good temperature tolerance. The value of series resistance has been estimated from the family of I-V curves at various intensities. The R{sub s} is found to be {approx}12{omega}, which is on the higher side from the point of view of photovoltaic application.

  4. Effect of Carbon Doping on the Structure and Magnetic Phase Transition in (Mn,Fe2(P,Si))

    Science.gov (United States)

    Thang, N. V.; Yibole, H.; Miao, X. F.; Goubitz, K.; van Eijck, L.; van Dijk, N. H.; Brück, E.

    2017-08-01

    Given the potential applications of (Mn,Fe2(P,Si))-based materials for room-temperature magnetic refrigeration, several research groups have carried out fundamental studies aimed at understanding the role of the magneto-elastic coupling in the first-order magnetic transition and further optimizing this system. Inspired by the beneficial effect of the addition of boron on the magnetocaloric effect of (Mn,Fe2(P,Si))-based materials, we have investigated the effect of carbon (C) addition on the structural properties and the magnetic phase transition of Mn_{1.25}Fe_{0.70}P_{0.50}Si_{0.50}C_z and Mn_{1.25}Fe_{0.70}P_{0.55}Si_{0.45}C_z compounds by x-ray diffraction, neutron diffraction and magnetic measurements in order to find an additional control parameter to further optimize the performance of these materials. All samples crystallize in the hexagonal Fe_2P-type structure (space group P-62m), suggesting that C doping does not affect the phase formation. It is found that the Curie temperature increases, while the thermal hysteresis and the isothermal magnetic entropy change decrease by adding carbon. Room-temperature neutron diffraction experiments on Mn_{1.25}Fe_{0.70}P_{0.55}Si_{0.45}C_z compounds reveal that the added C substitutes P/Si on the 2 c site and/or occupies the 6 k interstitial site of the hexagonal Fe_2P-type structure.

  5. Heterojunction between the delafossite TCO n-copper indium oxide and p-Si for solar cell applications

    Energy Technology Data Exchange (ETDEWEB)

    Keerthi, K.; Nair, B. G.; Philip, R. R., E-mail: reenatara@rediffmail.com [Thin film research lab, Union Christian College, Aluva, Cochin, Kerala (India); Masuzawa, T.; Saito, I.; Okano, K. [Department Of Material Science, International Christian University (Japan); Johns, N. [Indian Institute of Technology, Bombay (India)

    2016-05-23

    Junction formation of n-copper indium oxide (CIO) (extrinsically undoped) with p-Si leading to conversion of photons in the UV-Vis range is being reported for the first time. I-V and temporal photoconductivity data confirm positively the carrier generation in CIO under irradiation while optical absorbance data furnish its band gap to be ~ 3.1 eV. Ultraviolet photoelectron spectroscopy is used to study the electronic band structure of CIO on Si and to construct a schematic diagram of the hetero-junction to explain the observed photovoltaic phenomena.

  6. Novel palladium germanide schottky contact for high performance schottky barrier ge MOSFETs and characterization of its leakage current mechanism.

    Science.gov (United States)

    Oh, Se-Kyung; Shin, Hong-Sik; Kang, Min-Ho; Lee, Ga-Won; Lee, Hi-Deok

    2012-07-01

    The leakage current mechanism of Palladium (Pd) germanide Schottky contact on n-type Ge-on-Si substrate is analyzed in depth. The electric field dependent analysis shows that the dominant leakage current mechanism is the Poole-Frenkel emission due to the existence of deep level traps in the depletion region of the Pd germanide/n-type Ge Schottky diode. The analysis of the dependence of leakage current on temperature also shows that the Poole-Frenkel emission and generation current are the dominant components below 100 degrees C and that the Schottky emission related to thermionic emission of majority carriers over a potential barrier is the main cause of this dominance at high temperature region.

  7. Carbon nanotube Schottky diodes using Ti-Schottky and Pt-ohmic contacts for high frequency applications

    Science.gov (United States)

    Manohara, Harish M.; Wong, Eric W.; Schlecht, Erich; Hunt, Brian D.; Siegel, Peter H.

    2005-01-01

    We have demonstrated Schottky diodes using semiconducting single-walled nanotubes (s-SWNTs) with titanium Schottky and platinum Ohmic contacts for high-frequency applications. The diodes are fabricated using angled evaporation of dissimilar metal contacts over an s-SWNT. The devices demonstrate rectifying behavior with large reverse bias breakdown voltages of greater than 15 V. To decrease the series resistance, multiple SWNTs are grown in parallel in a single device, and the metallic tubes are burnt-out selectively. At low biases these diodes showed ideality factors in the range of 1.5 to 1.9. Modeling of these diodes as direct detectors at room temperature at 2.5 terahertz (THz) frequency indicates noise equivalent powers (NEP) potentially comparable to that of the state-of-the-art gallium arsenide solid-state Schottky diodes, in the range of 10-13 W(square root)xHz.

  8. A concise approach for building the s-T diagram for Mn-Fe-P-Si hysteretic magnetocaloric material

    Science.gov (United States)

    Christiaanse, T. V.; Campbell, O.; Trevizoli, P. V.; Misra, S.; van Asten, D.; Zhang, L.; Govindappa, P.; Niknia, I.; Teyber, R.; Rowe, A.

    2017-09-01

    The use of first order magnetocaloric materials (FOM’s) in magnetic cycles is of interest for the development of efficient magnetic heat pumps. FOM’s present promising magnetocaloric properties; however, hysteresis reduces the reversible adiabatic temperature change (Δ Tad ) of these materials, and consequently, impacts performance. The present paper evaluates the reversible Δ Tad in a FOM. Six samples of the Mn-Fe-P-Si material with different transition temperatures are examined. The samples are measured for heat capacity, magnetization, and adiabatic temperature change using heating and cooling protocols to characterize hysteresis. After correcting demagnetizing fields, the entropy-temperature (s-T ) diagrams are constructed and used to calculate adiabatic temperature change using four different thermal paths. The post-calculated Δ Tad is compared with experimental data from direct Δ Tad measurements. Most of the samples of Mn-Fe-P-Si show that post-calculated Δ Tad resulting from the heating zero field and cooling in-field entropy curves align best with the Δ Tad measurements. The impact of the demagnetizing field is shown in terms of absolute variation to the post-calculated Δ Tad . A functional representation is used to explain observed data sensitivities in the post-calculated Δ Tad .

  9. Ab initio density functional theory study on the atomic and electronic structure of GaP/Si(001) heterointerfaces

    Science.gov (United States)

    Romanyuk, O.; Supplie, O.; Susi, T.; May, M. M.; Hannappel, T.

    2016-10-01

    The atomic and electronic band structures of GaP/Si(001) heterointerfaces were investigated by ab initio density functional theory calculations. Relative total energies of abrupt interfaces and mixed interfaces with Si substitutional sites within a few GaP layers were derived. It was found that Si diffusion into GaP layers above the first interface layer is energetically unfavorable. An interface with Si/Ga substitution sites in the first layer above the Si substrate is energetically the most stable one in thermodynamic equilibrium. The electronic band structure of the epitaxial GaP/Si(001) heterostructure terminated by the (2 ×2 ) surface reconstruction consists of surface and interface electronic states in the common band gap of two semiconductors. The dispersion of the states is anisotropic and differs for the abrupt Si-Ga, Si-P, and mixed interfaces. Ga 2 p , P 2 p , and Si 2 p core-level binding-energy shifts were computed for the abrupt and the lowest-energy heterointerface structures. Negative and positive core-level shifts due to heterovalent bonds at the interface are predicted for the abrupt Si-Ga and Si-P interfaces, respectively. The distinct features in the heterointerface electronic structure and in the core-level shifts open new perspectives in the experimental characterization of buried polar-on-nonpolar semiconductor heterointerfaces.

  10. Electrical Investigation of Nanostructured Fe2O3/p-Si Heterojunction Diode Fabricated Using the Sol-Gel Technique

    Science.gov (United States)

    Mansour, Shehab A.; Ibrahim, Mervat M.

    2017-11-01

    Iron oxide (α-Fe2O3) nanocrystals have been synthesized via the sol-gel technique. The structural and morphological features of these nanocrystals were studied using x-ray diffraction, Fourier transform-infrared spectroscopy and transmission electron microscopy. Colloidal solution of synthesized α-Fe2O3 (hematite) was spin-coated onto a single-crystal p-type silicon (p-Si) wafer to fabricate a heterojunction diode with Mansourconfiguration Ag/Fe2O3/p-Si/Al. This diode was electrically characterized at room temperature using current-voltage (I-V) characteristics in the voltage range from -9 V to +9 V. The fabricated diode showed a good rectification behavior with a rectification factor 1.115 × 102 at 6 V. The junction parameters such as ideality factor, barrier height, series resistance and shunt resistance are determined using conventional I-V characteristics. For low forward voltage, the conduction mechanism is dominated by the defect-assisted tunneling process with conventional electron-hole recombination. However, at higher voltage, I-V ohmic and space charge-limited current conduction was became less effective with the contribution of the trapped-charge-limited current at the highest voltage range.

  11. Electrical behavior of MIS devices based on Si nanoclusters embedded in SiOxNy and SiO2 films

    Directory of Open Access Journals (Sweden)

    Debieu Olivier

    2011-01-01

    Full Text Available Abstract We examined and compared the electrical properties of silica (SiO2 and silicon oxynitride (SiOxNy layers embedding silicon nanoclusters (Sinc integrated in metal-insulator-semiconductor (MIS devices. The technique used for the deposition of such layers is the reactive magnetron sputtering of a pure SiO2 target under a mixture of hydrogen/argon plasma in which nitrogen is incorporated in the case of SiOxNy layer. Al/SiOxNy-Sinc/p-Si and Al/SiO2-Sinc/p-Si devices were fabricated and electrically characterized. Results showed a high rectification ratio (>104 for the SiOxNy-based device and a resistive behavior when nitrogen was not incorporating (SiO2-based device. For rectifier devices, the ideality factor depends on the SiOxNy layer thickness. The conduction mechanisms of both MIS diode structures were studied by analyzing thermal and bias dependences of the carriers transport in relation with the nitrogen content.

  12. A nanoscale pn junction in series with tunable Schottky barriers

    Science.gov (United States)

    Aspitarte, Lee; McCulley, Daniel R.; Minot, Ethan D.

    2017-10-01

    PN junctions in nanoscale materials are of interest for a range of technologies including photodetectors, solar cells, and light-emitting diodes. However, Schottky barriers at the interface between metal contacts and the nanomaterial are often unavoidable. The effect of metal-semiconductor interfaces on the behavior of nanoscale diodes must be understood, both to extract the characteristics of the pn junction, and to understand the overall characteristics of the final device. Here, we study the current-voltage characteristics of diodes that are formed in fully suspended carbon nanotubes (CNTs). We utilize tunable Schottky barrier heights at the CNT-metal interface to elucidate the role of the Schottky barriers on the device characteristics. We develop a quantitative model to show how a variety of device characteristics can arise from apparently similar devices. Using our model we extract key parameters of the Schottky barriers and the pn junction, and predict the overall I-V characteristics of the device. Our equivalent circuit model is relevant to a variety of nanomaterial-based diode devices that are currently under investigation.

  13. Silicon Schottky photovoltaic diodes for solar energy conversion

    Science.gov (United States)

    Anderson, W. A.

    1975-01-01

    Various factors in Schottky barrier solar cell fabrication are evaluated in order to improve understanding of the current flow mechanism and to isolate processing variables that improve efficiency. Results of finger design, substrate resistivity, surface finishing and activation energy studies are detailed. An increased fill factor was obtained by baking of the vacuum system to remove moisture.

  14. Enhanced Plasmonic Light Absorption for Silicon Schottky-Barrier Photodetectors

    DEFF Research Database (Denmark)

    Hashemi, Mahdieh; Farzad, Mahmood Hosseini; Mortensen, N. Asger

    2013-01-01

    is transferred into hot carriers near the Schottky barrier. The proposed broadband photodetector with a bi-grating metallic structure on the silicon substrate enables to absorb 76 % of the infrared light in the metal with a 200-nm bandwidth, while staying insensitive to the incident angle. These results pave...

  15. Electrical Properties of Self-Assembled Nano-Schottky Diodes

    Directory of Open Access Journals (Sweden)

    F. Ruffino

    2008-01-01

    Full Text Available A bottom-up methodology to fabricate a nanostructured material by Au nanoclusters on 6H-SiC surface is illustrated. Furthermore, a methodology to control its structural properties by thermal-induced self-organization of the Au nanoclusters is demonstrated. To this aim, the self-organization kinetic mechanisms of Au nanoclusters on SiC surface were experimentally studied by scanning electron microscopy, atomic force microscopy, Rutherford backscattering spectrometry and theoretically modelled by a ripening process. The fabricated nanostructured materials were used to probe, by local conductive atomic force microscopy analyses, the electrical properties of nano-Schottky contact Au nanocluster/SiC. Strong efforts were dedicated to correlate the structural and electrical characteristics: the main observation was the Schottky barrier height dependence of the nano-Schottky contact on the cluster size. Such behavior was interpreted considering the physics of few electron quantum dots merged with the concepts of ballistic transport and thermoionic emission finding a satisfying agreement between the theoretical prediction and the experimental data. The fabricated Au nanocluster/SiC nanocontact is suggested as a prototype of nano-Schottky diode integrable in complex nanoelectronic circuits.

  16. New Schottky-Pickup for COSY-Jülich

    CERN Document Server

    Mohos, I; Dietrich, J; Klehr, F

    2001-01-01

    A new Schottky-pickup for the Cooler Synchrotron COSY at the Forschungszentrum J?lich was developed, tested and installed. The new pickup with four diagonally arranged plates replaces the two 1 m long Schottky-pickups used until now in COSY. The previous ones were removed mainly to gain space for new installations (e.g. rf-cavity, experimental devices), but also to increase the horizontal aperture. The available space for the new pickup is only 0.8 m. The pickup plates can be combined by means of relays to measure either in the horizontal or in the vertical plane. The pickup can also be used either as a sensitive broadband beam position monitor or as a tuneable narrowband pickup for Schottky-noise analysis with ultahigh sensitivity. A new method for resonant tuning of the Schottky-pickups for transversal measurements was developed. The differentially excited resonant circuitry enhances the sensitivity by about a factor of 30. The pickups are also used for dynamical tune measurements (tune meter) in the accele...

  17. Effect of annealing temperature on the electrical properties of Au/Ta{sub 2}O{sub 5}/n-GaN metal-insulator-semiconductor (MIS) structure

    Energy Technology Data Exchange (ETDEWEB)

    Prasanna Lakshmi, B.; Rajagopal Reddy, V.; Janardhanam, V. [Sri Venkateswara University, Department of Physics, Tirupati (India); Siva Pratap Reddy, M.; Lee, Jung-Hee [Kyungpook National University, School of Electrical Engineering and Computer Science, Daegu (Korea, Republic of)

    2013-11-15

    We report on the effect of an annealing temperature on the electrical properties of Au/Ta{sub 2}O{sub 5}/n-GaN metal-insulator-semiconductor (MIS) structure by current-voltage (I-V) and capacitance-voltage (C-V) measurements. The measured Schottky barrier height ({Phi} {sub bo}) and ideality factor n values of the as-deposited Au/Ta{sub 2}O{sub 5}/n-GaN MIS structure are 0.93 eV (I-V) and 1.19. The barrier height (BH) increases to 1.03 eV and ideality factor decreases to 1.13 upon annealing at 500 {sup circle} C for 1 min under nitrogen ambient. When the contact is annealed at 600 {sup circle} C, the barrier height decreases and the ideality factor increases to 0.99 eV and 1.15. The barrier heights obtained from the C-V measurements are higher than those obtained from I-V measurements, and this indicates the existence of spatial inhomogeneity at the interface. Cheung's functions are also used to calculate the barrier height ({Phi} {sub bo}), ideality factor (n), and series resistance (R{sub s}) of the Au/Ta{sub 2}O{sub 5}/n-GaN MIS structure. Investigations reveal that the Schottky emission is the dominant mechanism and the Poole-Frenkel emission occurs only in the high voltage region. The energy distribution of interface states is determined from the forward bias I-V characteristics by taking into account the bias dependence of the effective barrier height. It is observed that the density value of interface states for the annealed samples with interfacial layer is lower than that of the density value of interface states of the as-deposited sample. (orig.)

  18. Mis on parem - Zaporozhets või Mercedes? / Andres Langemets

    Index Scriptorium Estoniae

    Langemets, Andres, 1948-

    2007-01-01

    Vastukaja Mikko Lagerspetzi artiklile 5. dets. Postimehes, mis oli omakorda vastukaja Jaak Aaviksoo artiklile 19. nov. Postimehes. Sotsioloogiast, sotsiaalteadlastest ja sotsioloogilistest küsitlustest

  19. Organic modification of metal / semiconductor Schottky contacts

    Energy Technology Data Exchange (ETDEWEB)

    Mendez Pinzon, H.A.

    2006-07-10

    In the present work a Metal / organic / inorganic semiconductor hybrid heterostructure (Ag / DiMe-PTCDI / GaAs) was built under UHV conditions and characterised in situ. The aim was to investigate the influence of the organic layer in the surface properties of GaAs(100) and in the electrical response of organic-modified Ag / GaAs Schottky diodes. The device was tested by combining surface-sensitive techniques (Photoemission spectroscopy and NEXAFS) with electrical measurements (current-voltage, capacitance-voltage, impedance and charge transient spectroscopies). Core level examination by PES confirms removal of native oxide layers on sulphur passivated (S-GaAs) and hydrogen plasma treated GaAs(100) (H+GaAs) surfaces. Additional deposition of ultrathin layers of DiMe-PTCDI may lead to a reduction of the surface defects density and thereby to an improvement of the electronic properties of GaAs. The energy level alignment through the heterostructure was deduced by combining UPS and I-V measurements. This allows fitting of the I-V characteristics with electron as majority carriers injected over a barrier by thermionic emission as a primary event. For thin organic layers (below 8 nm thickness) several techniques (UPS, I-V, C-V, QTS and AFM) show non homogeneous layer growth, leading to formation of voids. The coverage of the H+GaAs substrate as a function of the nominal thickness of DiMe-PTCDI was assessed via C-V measurements assuming a voltage independent capacitance of the organic layer. The frequency response of the device was evaluated through C-V and impedance measurements in the range 1 kHz-1 MHz. The almost independent behaviour of the capacitance in the measured frequency range confirmed the assumption of a near geometrical capacitor, which was used for modelling the impedance with an equivalent circuit of seven components. From there it was found a predominance of the space charge region impedance, so that A.C. conduction can only takes place through the

  20. Revised Bounds on Peak Global Mean Sea Level During MIS 5a and MIS 5c

    Science.gov (United States)

    Creveling, J. R.; Mitrovica, J. X.; Clark, P. U.; Waelbroeck, C.; Pico, T.

    2016-12-01

    Variations in global mean sea level (GMSL), and equivalent ice volume, during marine isotope stage (MIS) 5 remain uncertain. For example, previous reconstructions of peak GMSL during MIS 5c and 5a, 100 ka and 80 ka, respectively, range from -40 m to +20 m relative to present-day sea level. Efforts to refine this range using field-based markers of highstand elevations are complicated by contamination due to both glacial isostatic adjustment (GIA) in response to evolving Quaternary ice volumes and tectonic effects. To revisit estimates of peak GMSL during MIS 5c and 5a, and to elucidate the physics controlling the GIA signal, we present global-scale, gravitationally self-consistent predictions of post-glacial sea-level change across this time interval. Along the east and west coasts of North America, the GIA signal is dominated by a combination of the dynamics of the peripheral bulge of the Laurentide and Cordilleran Ice Sheets and variations in the gravitational effect of these ice masses on the surrounding ocean. We demonstrate that the present distribution of MIS 5c and 5a highstand markers in these two regions can only be reconciled by accounting for lateral variation in mantle viscosity beneath North America. Specifically, previously published compilations of these geological records require that the area extending from Virginia to the southern Caribbean lie on the outer flank of a peripheral bulge, while those along a transect from Oregon to Baja California Sur sit on the inner flank of a peripheral bulge. With this insight, we present a sensitivity analysis in which we compare the observed elevation of globally distributed highstand makers to a large suite of GIA simulations that vary the Earth model and the GMSL trend from the Last Interglacial to 70 ka. The analysis also accounts for uncertainty in the adopted tectonic correction. On the basis of this analysis we conclude that GMSL peaked between -16 m and 0 m during MIS 5a and -20 m to +0 m during MIS 5c.

  1. Computer simulation of amorphous MIS solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Shousha, A.H.M.; El-Kosheiry, M.A. [Cairo University (Egypt). Electronics and Communications Engineering Dept.

    1997-10-01

    A computer model to simulate amorphous MIS solar cells is developed. The model is based on the self-consistent solution of the electron and hole continuity equations, together with the Poisson equation under proper boundary conditions. The program developed is used to investigate the cell performance characteristics in terms of its physical and structural parameters. The current-voltage characteristics of the solar cell are obtained under AMI solar illumination. The dependences of the short-circuit current, open-circuit voltage, fill factor and cell conversion efficiency on localized gap state density, carrier lifetime, cell thickness and surface recombination velocity are obtained and discussed. The results presented show how cell parameters can be varied to improve the cell performance characteristics. (Author)

  2. EIS, Mott Schottky and EFM analysis of the electrochemical stability and dielectric properties of Ca-P-Ag and Ca-P-Si-Ag coatings obtained by plasma electrolytic oxidation in Ti6Al4V

    OpenAIRE

    Sara María Leal-Marin; Hugo Armando Estupiñán-Duran

    2017-01-01

    El Ti6Al4V ELI (ASTM F136) es una de las aleaciones más empleadas en dispositivos de osteosíntesis y reemplazo articular. Sin embargo, las propiedades de esta aleación pueden ser mejoradas respecto a su biocompatibilidad y osteointegración con el tejido óseo a través de recubrimientos. El objetivo de este trabajo fue evaluar el comportamiento electroquímico de un recubrimiento obtenido por oxidación por plasma electrolítico sobre Ti6Al4V ELI empleando soluciones electrolíticas enriquecidas co...

  3. Ultraviolet electroluminescence properties from devices based on n-ZnO/i-NiO/p-Si light-emitting diode

    Science.gov (United States)

    Wang, Hui; Zhao, Yang; Wu, Chao; Wu, Guoguang; Ma, Yan; Dong, Xin; Zhang, Baolin; Du, Guotong

    2017-07-01

    We fabricated the Ultraviolet light-emitting diode (LED) based on n-ZnO/i-NiO/p-Si heterostructure by metal-organic chemical vapor deposition (MOCVD). The device exhibited diode-like rectifying characteristics with a turn-on voltage of 3.2 V. The NiO film with high resistance state and [200] preferred orientation acted as an electron blocking layer, which produced a larger ZnO/NiO conduction band offset of 2.93 eV than that of ZnO/Si (0.30 eV). Under forward bias, prominent ultraviolet emissions peaked around 375 nm accompanying with rather weak blue-white emissions peaked around 480 nm were observed at room temperature. Furthermore, the mechanism of the electroluminescence was tentatively discussed in terms of the band diagram of the diode.

  4. Modification of electrical properties of PEDOT:PSS/p-Si heterojunction diodes by doping with dimethyl sulfoxide

    Science.gov (United States)

    Pathak, C. S.; Singh, J. P.; Singh, R.

    2016-05-01

    We report about the fabrication and electrical characterization of heterojunction diodes between poly (3,4-ethylenedioxythiophene) poly(styrenesulfonate) (PEDOT:PSS) doped with dimethyl sulfoxide (DMSO) and p-Si. Electrical characterization of the heterojunction diodes was performed using current-voltage (I-V) measurements. The heterojunction diodes showed good rectifying behavior. Interestingly, for 5 vol.% doping concentration of DMSO, the heterojunction diode showed the best diode characteristics with an ideality factor of 1.9. The doping of DMSO into PEDOT:PSS solution resulted in an increase in the conductivity of films by two orders of magnitude and the films showed high optical transmission (>85%) in the visible region.

  5. Intrinsic inhomogeneous barrier height at the n-TiO2/p-Si hole-blocking junction

    Science.gov (United States)

    Kumar, Mohit; Singh, Ranveer; Som, Tapobrata

    2018-01-01

    Using Kelvin probe force microscopy (KPFM) and temperature-dependent current-voltage characteristics, we study the charge transport across an n-TiO2/p-Si heterojunction. In particular, the KPFM result shows a variation in the work function at the TiO2 surface. On the other hand, temperature-dependent current-voltage characteristics depict a non-ideal hole-blocking behaviour of the same. In addition, the measured barrier height is found to decrease with temperature and does not follow the thermionic emission theory, strongly suggesting an inhomogeneous nature of the barrier. The observed barrier inhomogeneity is attributed to the nanoscale height modulation, arising due to the growth dynamics of TiO2 and corroborates well with the KPFM map. The presented results will open a new avenue to understand the charge transport in TiO2-based nanoscale devices.

  6. pSiM24 is a novel versatile gene expression vector for transient assays as well as stable expression of foreign genes in plants.

    Directory of Open Access Journals (Sweden)

    Dipak Kumar Sahoo

    Full Text Available We have constructed a small and highly efficient binary Ti vector pSiM24 for plant transformation with maximum efficacy. In the pSiM24 vector, the size of the backbone of the early binary vector pKYLXM24 (GenBank Accession No. HM036220; a derivative of pKYLX71 was reduced from 12.8 kb to 7.1 kb. The binary vector pSiM24 is composed of the following genetic elements: left and right T-DNA borders, a modified full-length transcript promoter (M24 of Mirabilis mosaic virus with duplicated enhancer domains, three multiple cloning sites, a 3'rbcsE9 terminator, replication functions for Escherichia coli (ColE1 and Agrobacterium tumefaciens (pRK2-OriV and the replicase trfA gene, selectable marker genes for kanamycin resistance (nptII and ampicillin resistance (bla. The pSiM24 plasmid offers a wide selection of cloning sites, high copy numbers in E. coli and a high cloning capacity for easily manipulating different genetic elements. It has been fully tested in transferring transgenes such as green fluorescent protein (GFP and β-glucuronidase (GUS both transiently (agro-infiltration, protoplast electroporation and biolistic and stably in plant systems (Arabidopsis and tobacco using both agrobacterium-mediated transformation and biolistic procedures. Not only reporter genes, several other introduced genes were also effectively expressed using pSiM24 expression vector. Hence, the pSiM24 vector would be useful for various plant biotechnological applications. In addition, the pSiM24 plasmid can act as a platform for other applications, such as gene expression studies and different promoter expressional analyses.

  7. pSiM24 is a novel versatile gene expression vector for transient assays as well as stable expression of foreign genes in plants.

    Science.gov (United States)

    Sahoo, Dipak Kumar; Dey, Nrisingha; Maiti, Indu Bhushan

    2014-01-01

    We have constructed a small and highly efficient binary Ti vector pSiM24 for plant transformation with maximum efficacy. In the pSiM24 vector, the size of the backbone of the early binary vector pKYLXM24 (GenBank Accession No. HM036220; a derivative of pKYLX71) was reduced from 12.8 kb to 7.1 kb. The binary vector pSiM24 is composed of the following genetic elements: left and right T-DNA borders, a modified full-length transcript promoter (M24) of Mirabilis mosaic virus with duplicated enhancer domains, three multiple cloning sites, a 3'rbcsE9 terminator, replication functions for Escherichia coli (ColE1) and Agrobacterium tumefaciens (pRK2-OriV) and the replicase trfA gene, selectable marker genes for kanamycin resistance (nptII) and ampicillin resistance (bla). The pSiM24 plasmid offers a wide selection of cloning sites, high copy numbers in E. coli and a high cloning capacity for easily manipulating different genetic elements. It has been fully tested in transferring transgenes such as green fluorescent protein (GFP) and β-glucuronidase (GUS) both transiently (agro-infiltration, protoplast electroporation and biolistic) and stably in plant systems (Arabidopsis and tobacco) using both agrobacterium-mediated transformation and biolistic procedures. Not only reporter genes, several other introduced genes were also effectively expressed using pSiM24 expression vector. Hence, the pSiM24 vector would be useful for various plant biotechnological applications. In addition, the pSiM24 plasmid can act as a platform for other applications, such as gene expression studies and different promoter expressional analyses.

  8. A model for mis-sense error in protein synthesis: mis-charged cognate tRNA versus mis-reading of codon

    CERN Document Server

    Dutta, Annwesha

    2015-01-01

    The sequence of amino acid monomers in the primary structure of protein is decided by the corresponding sequence of codons (triplets of nucleic acid monomers) on the template messenger RNA (mRNA). The polymerization of a protein, by incorporation of the successive amino acid monomers, is carried out by a molecular machine called ribosome. Transfer RNA (tRNA) molecules, each species of which is "charged" with a specific amino acid, enters the ribosome and participates in the reading of the codon by the ribosome. Both mis-reading of mRNA codon and prior mis-charging of a tRNA can lead to "mis-sense" error, i.e,. erroneous substitution of a correct amino acid monomer by an incorrect one during the synthesis of a protein. We develop a theoretical model of protein synthesis that allows for both types of contributions to the "mis-sense" error. We report exact analytical formulae for several quantities that characterize the interplay of mis-charging of tRNA and mis-reading of mRNA. The average rate of elongation of ...

  9. A novel physical parameter extraction approach for Schottky diodes

    Science.gov (United States)

    Wang, Hao; Chen, Xing; Xu, Guang-Hui; Huang, Ka-Ma

    2015-07-01

    Parameter extraction is an important step for circuit simulation methods that are based on physical models of semiconductor devices. A novel physical parameter extraction approach for Schottky diodes is proposed in this paper. By employing a set of analytical formulas, this approach extracts all of the necessary physical parameters of the diode chip in a unique way. It then extracts the package parasitic parameters with a curve-fitting method. To validate the proposed approach, a model HSMS-282c commercial Schottky diode is taken as an example. Its physical parameters are extracted and used to simulate the diode’s electrical characteristics. The simulated results based on the extracted parameters are compared with the measurements and a good agreement is obtained, which verifies the feasibility and accuracy of the proposed approach. Project supported by the Joint Fund of the National Natural Science Foundation of China and the China Academy of Engineering Physics (Grant No. U1230112).

  10. Physical based Schottky barrier diode modeling for THz applications

    DEFF Research Database (Denmark)

    Yan, Lei; Krozer, Viktor; Michaelsen, Rasmus Schandorph

    2013-01-01

    temperature. The effects of barrier height lowering, nonlinear resistance from the EPI layer, and hot electron noise are all included for accurate characterization of the Schottky diode. To verify the diode model, measured I-V and C-V characteristics are compared with the simulation results. Due to the lack......In this work, a physical Schottky barrier diode model is presented. The model is based on physical parameters such as anode area, Ohmic contact area, doping profile from epitaxial (EPI) and substrate (SUB) layers, layer thicknesses, barrier height, specific contact resistance, and device...... of measurement data for noise behaviors, simulated noise temperature is compared with the experimental data found from the open literature....

  11. Monte Carlo modelling of Schottky diode for rectenna simulation

    Science.gov (United States)

    Bernuchon, E.; Aniel, F.; Zerounian, N.; Grimault-Jacquin, A. S.

    2017-09-01

    Before designing a detector circuit, the electrical parameters extraction of the Schottky diode is a critical step. This article is based on a Monte-Carlo (MC) solver of the Boltzmann Transport Equation (BTE) including different transport mechanisms at the metal-semiconductor contact such as image force effect or tunneling. The weight of tunneling and thermionic current is quantified according to different degrees of tunneling modelling. The I-V characteristic highlights the dependence of the ideality factor and the current saturation with bias. Harmonic Balance (HB) simulation on a rectifier circuit within Advanced Design System (ADS) software shows that considering non-linear ideality factor and saturation current for the electrical model of the Schottky diode does not seem essential. Indeed, bias independent values extracted in forward regime on I-V curve are sufficient. However, the non-linear series resistance extracted from a small signal analysis (SSA) strongly influences the conversion efficiency at low input powers.

  12. Interface pn junction arrays with high yielded grown p-Si microneedles by vapor-liquid-solid method at low temperature

    Science.gov (United States)

    Islam, Md. Shofiqul; Ishida, Makoto

    2015-01-01

    In this work we report the fabrication and investigation of the properties of interface pn junction arrays formed at the interface of vertically aligned p-Si microneedles and n-Si substrate. Arrays of boron doped p-Si microneedles were grown on n-Si substrate with the maximum yield of 100% by Au-catalysed vapor-liquid-solid (VLS) growth using in-situ doping with the mixed gas of Si2H6 and B2H6 at temperature less than 700 °C, which is low as compared to the temperature (1100 °C) required by diffusion process to dope Si microneedles after VLS growth. The physical dimension (diameter, length) and position of these p-Si microneedles can be controlled. The variation of growth rate, diameter, conductivity, impurity concentration and hole mobility of these p-Si microneeedles were investigated with the variation of boron doping. The pn junctions, formed with p-Si microneedles having different diameters, were found to exhibit standard diode characteristics. These pn junction embedded Si microneedle arrays might be potential candidate in sensor area applications. Again, low temperature processing would be compatible to integrate these junction arrays with other circuitry on a chip. This work provides one step forward to realize more sophisticated vertical active devices (BJT, MOSFET, etc) with Si microneedles.

  13. Graphene/silicon nanowire Schottky junction for enhanced light harvesting.

    Science.gov (United States)

    Fan, Guifeng; Zhu, Hongwei; Wang, Kunlin; Wei, Jinquan; Li, Xinming; Shu, Qinke; Guo, Ning; Wu, Dehai

    2011-03-01

    Schottky junction solar cells are assembled by directly coating graphene films on n-type silicon nanowire (SiNW) arrays. The graphene/SiNW junction shows enhanced light trapping and faster carrier transport compared to the graphene/planar Si structure. With chemical doping, the SiNW-based solar cells showed energy conversion efficiencies of up to 2.86% at AM1.5 condition, opening a possibility of using graphene/semiconductor nanostructures in photovoltaic application.

  14. Silicide Schottky Contacts to Silicon: Screened Pinning at Defect Levels

    Energy Technology Data Exchange (ETDEWEB)

    Drummond, T.J.

    1999-03-11

    Silicide Schottky contacts can be as large as 0.955 eV (E{sub v} + 0.165 eV) on n-type silicon and as large as 1.05 eV (E{sub c} {minus} 0.07 eV) on p-type silicon. Current models of Schottky barrier formation do not provide a satisfactory explanation of occurrence of this wide variation. A model for understanding Schottky contacts via screened pinning at defect levels is presented. In the present paper it is shown that most transition metal silicides are pinned approximately 0.48 eV above the valence band by interstitial Si clusters. Rare earth disilicides pin close to the divacancy acceptor level 0.41 eV below the conduction band edge while high work function silicides of Ir and Pt pin close to the divacancy donor level 0.21 eV above the valence band edge. Selection of a particular defect pinning level depends strongly on the relative positions of the silicide work function and the defect energy level on an absolute energy scale.

  15. Metal-semiconductor Schottky barrier junctions and their applications

    CERN Document Server

    1984-01-01

    The present-day semiconductor technology would be inconceivable without extensive use of Schottky barrier junctions. In spite of an excellent book by Professor E.H. Rhoderick (1978) dealing with the basic principles of metal­ semiconductor contacts and a few recent review articles, the need for a monograph on "Metal-Semiconductor Schottky Barrier Junctions and Their Applications" has long been felt by students, researchers, and technologists. It was in this context that the idea of publishing such a monograph by Mr. Ellis H. Rosenberg, Senior Editor, Plenum Publishing Corporation, was considered very timely. Due to the numerous and varied applications of Schottky barrier junctions, the task of bringing it out, however, looked difficult in the beginning. After discussions at various levels, it was deemed appropriate to include only those typical applications which were extremely rich in R&D and still posed many challenges so that it could be brought out in the stipulated time frame. Keeping in view the la...

  16. Silver nanowires-templated metal oxide for broadband Schottky photodetector

    Energy Technology Data Exchange (ETDEWEB)

    Patel, Malkeshkumar; Kim, Hong-Sik; Kim, Joondong, E-mail: joonkim@inu.ac.kr [Photoelectric and Energy Device Application Lab (PEDAL) and Department of Electrical Engineering, Incheon National University, 119 Academy Rd. Yeonsu, Incheon 406772 (Korea, Republic of); Park, Hyeong-Ho [Applied Device and Material Lab., Device Technology Division, Korea Advanced Nano Fab Center (KANC), Suwon 443270 (Korea, Republic of)

    2016-04-04

    Silver nanowires (AgNWs)-templated transparent metal oxide layer was applied for Si Schottky junction device, which remarked the record fastest photoresponse of 3.4 μs. Self-operating AgNWs-templated Schottky photodetector showed broad wavelength photodetection with high responsivity (42.4 A W{sup −1}) and detectivity (2.75 × 10{sup 15} Jones). AgNWs-templated indium-tin-oxide (ITO) showed band-to-band excitation due to the internal photoemission, resulting in significant carrier collection performances. Functional metal oxide layer was formed by AgNWs-templated from ITO structure. The grown ITO above AgNWs has a cylindrical shape and acts as a thermal protector of AgNWs for high temperature environment without any deformation. We developed thermal stable AgNWs-templated transparent oxide devices and demonstrated the working mechanism of AgNWs-templated Schottky devices. We may propose the high potential of hybrid transparent layer design for various photoelectric applications, including solar cells.

  17. Towards substrate engineering of graphene-silicon Schottky diode photodetectors.

    Science.gov (United States)

    Selvi, Hakan; Unsuree, Nawapong; Whittaker, Eric; Halsall, Matthew P; Hill, Ernie W; Thomas, Andrew; Parkinson, Patrick; Echtermeyer, Tim J

    2018-02-01

    Graphene-silicon Schottky diode photodetectors possess beneficial properties such as high responsivities and detectivities, broad spectral wavelength operation and high operating speeds. Various routes and architectures have been employed in the past to fabricate devices. Devices are commonly based on the removal of the silicon-oxide layer on the surface of silicon by wet-etching before deposition of graphene on top of silicon to form the graphene-silicon Schottky junction. In this work, we systematically investigate the influence of the interfacial oxide layer, the fabrication technique employed and the silicon substrate on the light detection capabilities of graphene-silicon Schottky diode photodetectors. The properties of devices are investigated over a broad wavelength range from near-UV to short-/mid-infrared radiation, radiation intensities covering over five orders of magnitude as well as the suitability of devices for high speed operation. Results show that the interfacial layer, depending on the required application, is in fact beneficial to enhance the photodetection properties of such devices. Further, we demonstrate the influence of the silicon substrate on the spectral response and operating speed. Fabricated devices operate over a broad spectral wavelength range from the near-UV to the short-/mid-infrared (thermal) wavelength regime, exhibit high photovoltage responses approaching 106 V W-1 and short rise- and fall-times of tens of nanoseconds.

  18. Mullerian Inhibiting Substance (MIS) Augments IFN-Gamma Mediated Inhibition of Breast Cancer Cell Growth

    National Research Council Canada - National Science Library

    Gupta, Vandana

    2005-01-01

    .... In male embryos, MIS causes regression of the Mullerian duct. We have recently demonstrated the presence of MIS receptors in mammary tissue and in breast cancer cell lines suggesting that the mammary gland is a likely target for MIS...

  19. Effects of ZnO seed layer annealing temperature on the properties of n-ZnO NWs/Al(2)O(3)/p-Si heterojunction.

    Science.gov (United States)

    Gu, Yu-Zhu; Lu, Hong-Liang; Zhang, Yuan; Wang, Peng-Fei; Ding, Shi-Jin; Zhang, David Wei

    2015-09-21

    Effects of ZnO seed layer annealing temperature on the characteristics of the n-ZnO nanowires/Al(2)O(3)/p-Si heterojunction are investigated. Well-aligned ZnO nanowires (NWs) are grown through a simple hydrothermal method. Both the insertion of Al(2)O(3) buffer layer and the annealing treatment of ZnO seed layer are advantageous for the growth of ZnO NWs. This leads to a relatively high rectification ratio of up to 7.8 × 10(3) at ± 4.0 V in ZnO NWs/Al(2)O(3)/p-Si heterojunction photodetectors. The photoelectrical property of n-ZnO/p-Si photodetectors with an enhanced UV/dark current ratio as high as 30 under a reverse bias of 4.0 V is obtained.

  20. Mis-swallowing of cleaning naphtha: report of three cases.

    Science.gov (United States)

    Kuo, C Y; Lee, C Y

    1990-01-01

    Cleaning naphtha, a product of Chinese Petroleum Corporation, is a complex hydrocarbon mixture which contains mainly aliphatic hydrocarbons. It is used as a cleaning fluid and solvent. Three toddlers mis-swallowed a mouth of cleaning naphtha accidentally. One developed multiple organ failure before death, another completely recovered without sequelae, and the other died very soon after mis-swallowing. Two fatal cases were both induced vomiting with aspiration immediately after mis-swallowing by their parents. Therefore, inducing vomiting should not be encouraged especially at home, and prevention of aspiration is very important in the management of such cases.

  1. Single In x Ga1-x As nanowire/p-Si heterojunction based nano-rectifier diode

    Science.gov (United States)

    Sarkar, K.; Palit, M.; Guhathakurata, S.; Chattopadhyay, S.; Banerji, P.

    2017-09-01

    Nanoscale power supply units will be indispensable for fabricating next generation smart nanoelectronic integrated circuits. Fabrication of nanoscale rectifier circuits on a Si platform is required for integrating nanoelectronic devices with on-chip power supply units. In the present study, a nanorectifier diode based on a single standalone In x Ga1-x As nanowire/p-Si (111) heterojunction fabricated by metal organic chemical vapor deposition technique has been studied. The nanoheterojunction diodes have shown good rectification and fast switching characteristics. The rectification characteristics of the nanoheterojunction have been demonstrated by different standard waveforms of sinusoidal, square, sawtooth and triangular for two different frequencies of 1 and 0.1 Hz. Reverse recovery time of around 150 ms has been observed in all wave response. A half wave rectifier circuit with a simple capacitor filter has been assembled with this nanoheterojunction diode which provides 12% output efficiency. The transport of carriers through the heterojunction is investigated. The interface states density of the nanoheterojunction has also been determined. Occurrence of output waveforms incommensurate with the input is attributed to higher series resistance of the diode which is further explained considering the dimension of p-side and n-side of the junction. The sudden change of ideality factor after 1.7 V bias is attributed to recombination through interface states in space charge region. Low interface states density as well as high rectification ratio makes this heterojunction diode a promising candidate for future nanoscale electronics.

  2. Investigation on light emission in light-emitting diodes constructed with n-ZnO and p-Si nanowires.

    Science.gov (United States)

    Kim, Kwangeun; Moon, Taeho; Kim, Sangsig

    2011-07-01

    The light emission was investigated in light-emitting diodes (LEDs) constructed with n-ZnO and p-Si nanowires (NWs). ZnO NWs were synthesized by thermal chemical vapor deposition and Si NWs were formed by crystallographic wet etching of a Si wafer. The LEDs were fabricated using the NWs via dielectrophoresis (DEP) and direct transfer methods. The DEP method enabled to align the ZnO NW at the position that led to p-n heterojunction diodes by crossing with the transferred Si NW. The I-V curve of the p-n heterojunction diode showed the well-defined current-rectifying characteristic, with a turn-on voltage of 3 V. The electroluminescence spectrum in the dark showed the strong emission at approximately 385 nm and the broad emission centered at approximately 510 nm, at a forward bias of 30 V. Under the illumination of 325-nm-wavelength light, the luminescence intensity at 385 nm was dramatically enhanced, compared to that in the dark, probably due to the electric-field-induced enhancement of luminescence.

  3. Ultrahigh broadband photoresponse of SnO2 nanoparticle thin film/SiO2/p-Si heterojunction.

    Science.gov (United States)

    Ling, Cuicui; Guo, Tianchao; Lu, Wenbo; Xiong, Ya; Zhu, Lei; Xue, Qingzhong

    2017-06-29

    The SnO2/Si heterojunction possesses a large band offset and it is easy to control the transportation of carriers in the SnO2/Si heterojunction to realize high-response broadband detection. Therefore, we investigated the potential of the SnO2 nanoparticle thin film/SiO2/p-Si heterojunction for photodetectors. It is demonstrated that this heterojunction shows a stable, repeatable and broadband photoresponse from 365 nm to 980 nm. Meanwhile, the responsivity of the device approaches a high value in the range of 0.285-0.355 A W(-1) with the outstanding detectivity of ∼2.66 × 10(12) cm H(1/2) W(-1) and excellent sensitivity of ∼1.8 × 10(6) cm(2) W(-1), and its response and recovery times are extremely short (graphene (photosensitivity of 7.5 × 10(5) cm(2) W(-1) and detectivity of ∼2.5 × 10(11) cm H(1/2) W(-1)). The excellent device performance is attributed to the large Fermi energy difference between the SnO2 nanoparticle thin film and Si, SnO2 nanostructure, oxygen vacancy defects and thin SiO2 layer. Consequently, practical highly-responsive broadband PDs may be actualized in the future.

  4. Temperature-dependent electrical characteristics of CBD/CBD grown n-ZnO nanowire/p-Si heterojunction diodes

    Science.gov (United States)

    Das, Avishek; Kushwaha, Ajay; Kajen Sivasayan, Rasanayagam; Chakraborty, Sandipan; Sekhar Dutta, Himadri; Karmakar, Anupam; Chattopadhyay, Sanatan; Chi, Dongzhi; Dalapati, Goutam Kumar

    2016-04-01

    Heterojunction diodes are fabricated using a low-temperature chemical bath deposition of oriented and crystalline ZnO nanowires on a    p-silicon substrate. The electrical transport properties of the heterojunction are investigated at various temperatures by measuring current-voltage (I-V) characteristics in the range of 90-390 K. A thermionic emission (TE) model is used to analyze the transport behavior. The deviation in the experimental value of Richardson’s constant for ZnO nanowires is obtained from I-V-T measurement. The temperature dependence of the effective barrier height and ideality factor is attributed to the inhomogeneous barrier height distribution at the n-ZnO NW/p-Si hetero-interface. The TE and barrier inhomogeneity model are simultaneously used to extract the appropriate value of the Richardson’s constants in three different temperature regions. Linear fittings for three different temperature regions suggest multiple Gaussian distributions of barrier heights at the junction.

  5. Growth and characteristics of ZnO nano-aggregates electrodeposited onto p-Si(1 1 1)

    Energy Technology Data Exchange (ETDEWEB)

    Messai, Z., E-mail: messaimr@yahoo.fr [Institut PRISME, Universite d' Orleans, 21 rue Loigny la Bataille, 28000 Chartres (France); Laboratoire optoelectronique et composants, UFAS 19000 (Algeria); Centre Universitaire de Bordj Bou-Arreridj, Departement d' Electronique, 34000 Bordj Bou-Arreridj (Algeria); Ouennoughi, Z. [Laboratoire optoelectronique et composants, UFAS 19000 (Algeria); Devers, T. [Institut PRISME, Universite d' Orleans, 21 rue Loigny la Bataille, 28000 Chartres (France); Mouet, T. [Institut PRISME, Universite d' Orleans, 21 rue Loigny la Bataille, 28000 Chartres (France); Centre Universitaire de Bordj Bou-Arreridj, Departement d' Electronique, 34000 Bordj Bou-Arreridj (Algeria); Harel, V. [Institut PRISME, Universite d' Orleans, 21 rue Loigny la Bataille, 28000 Chartres (France); Konstantinov, K. [Institute for Superconducting and Electronic Materials, Engineering Faculty, University of Wollongong, 2522 Wollongong (Australia); Bouguechal, N. [Laboratoire d' Electronique Avancee (LEA), Departement d' Electronique, Universite de Batna, Batna (Algeria)

    2010-11-01

    In this paper we study nanocrystalline zinc oxide thin films produced by oxidation of electrodeposited zinc nanolayers on a monocrystalline p-Si(1 1 1) substrate. The electrolyte used is ZnCl{sub 2}, an aqueous solution of 4 x 10{sup -2} mol/l concentration. Several deposits were made for various current densities, ranging from 13 mA/cm{sup 2} to 44 mA/cm{sup 2}, flowing through the solution at room temperature. A parametric study enabled us to assess the effect of the current density on nucleation potential and time as well as zinc films structure. The grazing incidence X-ray diffraction (GIXD) revealed that both Zn and ZnO films are polycrystalline and nanometric. After 1-h oxidation of zinc films at 450 deg. C in the open air, the structural analyses showed that the obtained ZnO films remained polycrystalline with an average crystal size of about 47 nm and with (1 0 0), (0 0 2) and (1 0 1) as preferential crystallographic orientations.

  6. Silicon MIS diodes with Cr{sub 2}O{sub 3} nanofilm: Optical, morphological/structural and electronic transport properties

    Energy Technology Data Exchange (ETDEWEB)

    Erdogan, Ibrahim Y. [Bingoel University, Faculty of Sciences and Arts, Department of Chemistry, 12000- Bingoel (Turkey); Guellue, O., E-mail: omergullu@gmail.com [Batman University, Faculty of Sciences and Arts, Department of Physics, 72060- Batman (Turkey)

    2010-04-15

    In this work we report the optical, morphological and structural characterization and diode application of Cr{sub 2}O{sub 3} nanofilms grown on p-Si substrates by spin coating and annealing process. X-ray diffraction (XRD), non-contact mode atomic force microscopy (NC-AFM), ultraviolet-visible (UV-vis) spectroscopy and photoluminescence (PL) spectroscopy were used for characterization of nanofilms. For Cr{sub 2}O{sub 3} nanofilms, the average particle size determined from XRD and NC-AFM measurements was approximately 70 nm. Structure analyses of nanofilms demonstrate that the single phase Cr{sub 2}O{sub 3} on silicon substrate is of high a crystalline structure with a dominant in hexagonal (1 1 0) orientation. The morphologic analysis of the films indicates that the films formed from hexagonal nanoparticles are with low roughness and uniform. UV-vis absorption measurements indicate that the band gap of the Cr{sub 2}O{sub 3} film is 3.08 eV. The PL measurement shows that the Cr{sub 2}O{sub 3} nanofilm has a strong and narrow ultraviolet emission, which facilitates potential applications in future photoelectric nanodevices. Au/Cr{sub 2}O{sub 3}/p-Si metal/interlayer/semiconductor (MIS) diodes were fabricated for investigation of the electronic properties such as current-voltage and capacitance-voltage. Ideality factor and barrier height for Au//Cr{sub 2}O{sub 3}/p-Si diode were calculated as 2.15 eV and 0.74 eV, respectively. Also, interfacial state properties of the MIS diode were determined. The interface-state density of the MIS diode was found to vary from 2.90 x 10{sup 13} eV{sup -1} cm{sup -2} to 8.45 x 10{sup 12} eV{sup -1} cm{sup -2}.

  7. MIS Case Study: I-94 Rehabilitation Project - Detroit, Michigan.

    Science.gov (United States)

    1997-01-01

    ISTEA includes specific requirements for inclusion in studies of Major Investment Projects in Metropolitan Planning Areas. The State of Michigan initiated a Major Investment Study (MIS) in October 1994 for the redesign and reconstruction of a 7 mile ...

  8. FATCA - mis see on? / Steve Austwick ; intervjueerinud Joel Zernask

    Index Scriptorium Estoniae

    Austwick, Steve

    2012-01-01

    Ameerika Ühendriikide seaduseelnõust, mis mõjutab enamikku finantsteenuseid pakkuvaid ettevõtteid üle maailma, sealhulgas ka Balti riikides. Lisatud FATCA ajakava. FATCA = Foreign Account Tax Compliance Act

  9. Ajalugu, mis ei lõppenudki / Mikko Lagerspetz

    Index Scriptorium Estoniae

    Lagerspetz, Mikko

    2006-01-01

    Kirjastuses "Tänapäev" ilmus 2006. a. Francis Fukuyama raamat "Riikluse ehitamine : valitsemine ja maailmakord 21. sajandil". Artikli pealkiri vihjab autori esimesele raamatule "Ajaloo lõpp ja viimane inimene", mis ilmus 1992. a.

  10. Electrical and carrier transport properties of the Au/Y2O3/n-GaN metal-insulator-semiconductor (MIS) diode with rare-earth oxide interlayer

    Science.gov (United States)

    Venkata Prasad, C.; Rajagopal Reddy, V.; Choi, Chel-Jong

    2017-04-01

    The electrical and transport properties of rare-earth Y2O3 on n-type GaN with Au electrode have been investigated by current-voltage and capacitance-voltage techniques at room temperature. The Au/Y2O3/n-GaN metal-insulator-semiconductor (MIS) diode shows a good rectification behavior compared to the Au/n-GaN metal-semiconductor (MS) diode. Statistical analysis showed that a mean barrier height (BH) and ideality factor are 0.78 eV and 1.93, and 0.96 eV and 2.09 for the Au/n-GaN MS and Au/Y2O3/n-GaN MIS diodes, respectively. Results indicate that the high BH is obtained for the MIS diode compared to the MS diode. The BH, ideality factor and series resistance are also estimated by Cheung's function and Norde method. From the forward current-voltage data, the interface state density ( N SS) is estimated for both the MS and MIS Schottky diodes, and found that the estimated N SS is lower for the MIS diode compared to the MS diode. The results reveal that the introduction of Y2O3 interlayer facilitated the reduction of N SS of the Au/n-GaN interface. Experimental results suggest that the Poole-Frenkel emission is a dominant conduction mechanism in the reverse bias region of both Au/n-GaN MS and Au/Y2O3/n-GaN MIS diodes.

  11. Aspects and experiences of MIS and SICStus Prolog

    OpenAIRE

    Hagner, Nils; Olsson, Ingvar

    1991-01-01

    The ISP version of SICStus Prolog is an advanced Prolog system which can be used in a large variety of applications. Prolog, however, has not been very widely used in data-intensive MIS, management information systems, applications which are centered around one or more databases. In this document, a (possible) relationship between MIS applications and SICStus Prolog is investigated. In the course of the investigation, a sample application has been developed. It is a running prototype of a dec...

  12. Specification of fact calculations within the MetaMIS approach

    OpenAIRE

    Holten, Roland; Dreiling, Alexander

    2002-01-01

    Based on recent work on the so called MetaMIS approach we show how fact calculations can be specified from a management point of view. The MetaMIS approach's intention is to specify management views on business processes. It comprises a language, a representation formalism and guidelines to define information required for management decisions. Information in general should have pragmatic meaning for the management user. Beyond the task of specifying information in this sense, fact calculation...

  13. Bonding temperature dependence of GaInAsP/InP laser diode grown on hydrophilically directly bonded InP/Si substrate

    Science.gov (United States)

    Aikawa, Masaki; Onuki, Yuya; Hayasaka, Natsuki; Nishiyama, Tetsuo; Kamada, Naoki; Han, Xu; Kallarasan Periyanayagam, Gandhi; Uchida, Kazuki; Sugiyama, Hirokazu; Shimomura, Kazuhiko

    2018-02-01

    The bonding-temperature-dependent lasing characteristics of 1.5 a µm GaInAsP laser diode (LD) grown on a directly bonded InP/Si substrate were successfully obtained. We have fabricated the InP/Si substrate using a direct hydrophilic wafer bonding technique at bonding temperatures of 350, 400, and 450 °C, and deposited GaInAsP/InP double heterostructure layers on this InP/Si substrate. The surface conditions, X-ray diffraction (XRD) analysis, photoluminescence (PL) spectra, and electrical characteristics after the growth were compared at these bonding temperatures. No significant differences were confirmed in X-ray diffraction analysis and PL spectra at these bonding temperatures. We realized the room-temperature lasing of the GaInAsP LD on the InP/Si substrate bonded at 350 and 400 °C. The threshold current densities were 4.65 kA/cm2 at 350 °C and 4.38 kA/cm2 at 400 °C. The electrical resistance was found to increase with annealing temperature.

  14. Fabrication of the heterojunction diode from Y-doped ZnO thin films on p-Si substrates by sol-gel method

    Science.gov (United States)

    Sharma, Sanjeev K.; Singh, Satendra Pal; Kim, Deuk Young

    2018-02-01

    The heterojunction diode of yttrium-doped ZnO (YZO) thin films was fabricated on p-Si(100) substrates by sol-gel method. The post-annealing process was performed at 600 °C in vacuum for a short time (3 min) to prevent inter-diffusion of Zn, Y, and Si atoms. X-ray diffraction (XRD) pattern of as-grown and annealed (600 °C in vacuum) films showed the preferred orientation along the c-axis (002) regardless of dopant concentrations. The uniform surface microstructure and the absence of other metal/oxide peaks in XRD pattern confirmed the excellence of films. The increasing bandgap and carrier concentration of YZO thin films were interpreted by the BM shift, that is, the Fermi level moves towards the conduction band edge. The current-voltage characteristics of the heterojunction diode, In/n-ZnO/p-Si/Al, showed a rectification behavior. The turn-on voltage and ideality factor of n-ZnO/p-Si and n-YZO/p-Si were observed to be 3.47 V, 2.61 V, and 1.97, 1.89, respectively. Y-dopant in ZnO thin films provided more donor electrons caused the shifting of Fermi-energy level towards the conduction band and strengthen the interest for heterojunction diodes.

  15. Modelling the warm interglacials: analogues of MIS1

    Science.gov (United States)

    Herold, N.; Yin, Q. Z.; Karami, M. P.; Berger, A.

    2012-04-01

    Determining interglacial diversity, primarily as a function of duration, intensity and unique climate responses to Earth's orbital variations has become a focal point for researchers trying to better understand our current interglacial. Numerous interglacials have been espoused as Marine Isotopic Stage (MIS) 1 analogues or windows into the future of Holocene climate based on their astronomical characteristics, seasonal insolation patterns or their similarity with predicted anthropogenic warming. However, to date there has been little quantitative study of the climate of these interglacials within a physically robust framework. Here we examine the climate response to peak interglacial forcing during MIS1, 5, 9, 11 and 19 using the Community Climate System Model 3. We determine which interglacial provides the closest analogue to peak MIS1 conditions as well as the mechanisms which dominate the surface climate responses of these interglacials. Considering the differences in astronomical parameters and greenhouse gases we discount MIS5 and 9 as analogues to peak MIS1 conditions due to their significant warmth and stronger precipitation and vegetation responses. Conversely, based on seasonal and hemispheric averages of surface temperature, precipitation and sea-ice cover, MIS11 and 19 are most similar to MIS1, with MIS11 actually exhibiting a higher affinity particularly during boreal summer. This is attributed to a greater similarity in the seasonal and latitudinal distribution of insolation over middle latitude Eurasia and North America, which are the regions most sensitive to insolation change given the absence of ice-sheet dynamics in our model. Global ocean overturning circulation during MIS11 is also closer to MIS1 than circulation during MIS19 is, due predominantly to differences in Weddell Sea bottom water formation. Thus, under the assumption of present-day ice-sheets MIS11 appears to be the better climatic analogue to peak MIS1 conditions. In addition to the

  16. Modeling of Schottky Barrier Diode Millimeter-Wave Multipliers at Cryogenic Temperatures

    DEFF Research Database (Denmark)

    Johansen, Tom K.; Rybalko, Oleksandr; Zhurbenko, Vitaliy

    2015-01-01

    We report on the evaluation of Schottky barrier diode GaAs multipliers at cryogenic temperatures. A GaAs Schottky barrier diode model is developed for theoretical estimation of doubler performance. The model is used to predict efficiency of doublers from room to cryogenic temperatures...

  17. Fullerene-based Schottky-junction organic solar cells: a brief review

    Science.gov (United States)

    Sutty, Sibi; Williams, Graeme; Aziz, Hany

    2014-01-01

    Recent advances in fullerene-based Schottky organic solar cells (OSCs) are presented, with a focus on the current understanding of device physics. Fullerene-based Schottky OSCs attain high open-circuit voltages due to the n-type Schottky junction formed between fullerene and an adjacent high work function anode. Small concentrations of donor material doped into the fullerene matrix serve as efficient exciton dissociation and hole transport agents that can substantially bolster short-circuit currents and fill factors. As a consequence, fullerene-based Schottky OSCs have been demonstrated to provide some of the highest-performance vacuum-deposited small molecule OSCs, with power conversion efficiencies up to 8.1%. Fullerene-based Schottky OSCs constructed using different donor materials and varying cathode buffer layers, as studied by a number of different research groups, are presented. To elucidate the differences between Schottky OSCs and more traditional bulk-heterojunction OSCs, we discuss the photophysics of fullerenes, the role of the donor material, and charge transport in low donor concentration active layers. Fullerene-based Schottky OSCs possess considerable advantages because they can reach high efficiencies with a simple structure using readily available and cost-effective materials. The impact and applicability of the Schottky device architecture on the field of organic photovoltaics at large are discussed.

  18. Transformation of polycrystalline tungsten to monocrystalline tungsten W(100) and its potential application in Schottky emitters

    NARCIS (Netherlands)

    Dokania, A.K.; Hendrikx, R.; Kruit, P.

    2009-01-01

    The electron sources in electron microscopes and electron lithography machines often consist of small diameter W(100) wires, etched to form a sharp tip. The electron emission is facilitated by the Schottky effect, thus the name Schottky emitter. The authors are investigating the feasibility of

  19. Deep-level transient spectroscopy on an amorphous InGaZnO4 Schottky diode

    NARCIS (Netherlands)

    Chasin, A.; Simoen, E.; Bhoolokam, A.; Nag, M.; Genoe, J.; Gielen, G.; Heremans, P.

    2014-01-01

    The first direct measurement is reported of the bulk density of deep states in amorphous IGZO (indium-gallium-zinc oxide) semiconductor by means of deep-level transient spectroscopy (DLTS). The device under test is a Schottky diode of amorphous IGZO semiconductor on a palladium (Pd) Schottky-barrier

  20. Performance of RF sputtered p-Si/n-ZnO nanoparticle thin film heterojunction diodes in high temperature environment

    Energy Technology Data Exchange (ETDEWEB)

    Singh, Satyendra Kumar, E-mail: satyndra.singh.eee09@itbhu.ac.in [Department of Electronics and Communication Engineering, Model Institute of Engineering and Technology, Jammu, 181122 (India); Department of Electronics and Communication Engineering, Motilal Nehru National Institute of Technology, Allahabad, Uttar Pradesh, 211004 (India); Hazra, Purnima, E-mail: purnima.hazra@smvdu.ac.in [Department of Electronics and Communication Engineering, Shri Mata Vaishno Devi University, Katra, Jammu and Kashmir, 182320 (India)

    2017-04-01

    Highlights: • Synthesize ZnO nanoparticle thin film on p-Si substrate using RF sputtering method. • I–V and C–V characteristics of Si/ZnO heterojunction diode are studied. • High temperature performance is analyzed accounting barrier height inhomogeneities. • Gaussian distribution of BH inhomogeneities is considered to modify Richardson plot. • Modified R constant is 33.06 Acm{sup −2}K{sup −2}, i.e. nearer to theoretical value 32 Acm{sup −2}K{sup −2}. - Abstract: In this article, temperature-dependent current-voltage characteristics of n-ZnO/p-Si nanoparticle thin film heterojunction diode grown by RF sputtering technique are analyzed in the temperature range of 300–433 k to investigate the performance of the device in high temperature environment. The microstructural, morphological, optical and temptrature dependent electrical properties of as-grown nanoparticle thin film were characterized by X-ray diffractometer (XRD), atomic force microscopy (AFM), field emmision scanning electron microscopy (FESEM), energy-dispersive X-ray spectroscopy (EDX), variable angle ellipsometer and semiconductor device analyzer. XRD spectra of as-grown ZnO films are exhibited that highly c-axis oriented ZnO nanostructures are grown on p- Si〈100〉 substrate whereas AFM and FESEM images confirm the homogeneous deposition of ZnO nanoparticles on surface of Si substratewith minimum roughness.The optical propertiesof as-grown ZnO nanoparticles have been measured in the spectral range of 300–800 nm using variable angle ellipsometer.To measure electrical parameters of the device prototype in the temperature range of room temperature (300 K) to 433 K, large area ohmic contacts were fabricated on both side of the ZnO/Si heterostructure. From the current-voltage charcteristics of ZnO/Si heterojunction device, it is observed that the device exhibits rectifing nature at room temperature. However, with increase in temperature, reverse saturation current and barrier

  1. Quantitative reconstruction of precipitation and runoff during MIS 5a, MIS 3a, and Holocene, arid China

    Science.gov (United States)

    Liu, Yuan; Li, Yu

    2017-11-01

    Marine oxygen isotope stage 5a (MIS 5a), MIS 3a, and Holocene were highlighted periods in paleoclimate studies. Many scientists have published a great number of studies in this regard, but they paid more attention to qualitative research, and there was often a lack of quantitative data. In this paper, based on chronological evidence from a paleolake in arid China, MIS 5a, MIS 3a, and Holocene lake area, the precipitation of the drainage area and the runoff of the inflowing rivers of the lake were reconstructed with ArcGIS spatial analysis software and the improved water and energy balance model which was calibrated by modern meteorological and hydrological data in the Shiyang River drainage basin. The results showed that the paleolake areas were 1824, 1124, and 628 km2 for MIS 5a, MIS 3a, and Holocene; meanwhile, the paleoprecipitation and runoff were 293.992-297.433, 271.105-274.294, and 249.431-252.373 mm and 29.103 × 108-29.496 × 108, 18.810 × 108-18.959 × 108, and 10.637 × 108-10.777 × 108 mm, respectively. The quantitative data can help us not only strengthen the understanding of paleoclimatic characteristics but also recognize the complexity and diversity of the climate system.

  2. Temperature dependent simulation of diamond depleted Schottky PIN diodes

    Science.gov (United States)

    Hathwar, Raghuraj; Dutta, Maitreya; Koeck, Franz A. M.; Nemanich, Robert J.; Chowdhury, Srabanti; Goodnick, Stephen M.

    2016-06-01

    Diamond is considered as an ideal material for high field and high power devices due to its high breakdown field, high lightly doped carrier mobility, and high thermal conductivity. The modeling and simulation of diamond devices are therefore important to predict the performances of diamond based devices. In this context, we use Silvaco® Atlas, a drift-diffusion based commercial software, to model diamond based power devices. The models used in Atlas were modified to account for both variable range and nearest neighbor hopping transport in the impurity bands associated with high activation energies for boron doped and phosphorus doped diamond. The models were fit to experimentally reported resistivity data over a wide range of doping concentrations and temperatures. We compare to recent data on depleted diamond Schottky PIN diodes demonstrating low turn-on voltages and high reverse breakdown voltages, which could be useful for high power rectifying applications due to the low turn-on voltage enabling high forward current densities. Three dimensional simulations of the depleted Schottky PIN diamond devices were performed and the results are verified with experimental data at different operating temperatures

  3. Temperature dependent simulation of diamond depleted Schottky PIN diodes

    Energy Technology Data Exchange (ETDEWEB)

    Hathwar, Raghuraj; Dutta, Maitreya; Chowdhury, Srabanti; Goodnick, Stephen M. [Department of Electrical Engineering, Arizona State University, Tempe, Arizona 85287-8806 (United States); Koeck, Franz A. M.; Nemanich, Robert J. [Department of Physics, Arizona State University, Tempe, Arizona 85287-8806 (United States)

    2016-06-14

    Diamond is considered as an ideal material for high field and high power devices due to its high breakdown field, high lightly doped carrier mobility, and high thermal conductivity. The modeling and simulation of diamond devices are therefore important to predict the performances of diamond based devices. In this context, we use Silvaco{sup ®} Atlas, a drift-diffusion based commercial software, to model diamond based power devices. The models used in Atlas were modified to account for both variable range and nearest neighbor hopping transport in the impurity bands associated with high activation energies for boron doped and phosphorus doped diamond. The models were fit to experimentally reported resistivity data over a wide range of doping concentrations and temperatures. We compare to recent data on depleted diamond Schottky PIN diodes demonstrating low turn-on voltages and high reverse breakdown voltages, which could be useful for high power rectifying applications due to the low turn-on voltage enabling high forward current densities. Three dimensional simulations of the depleted Schottky PIN diamond devices were performed and the results are verified with experimental data at different operating temperatures.

  4. Hybrid graphene/silicon Schottky photodiode with intrinsic gating effect

    Science.gov (United States)

    Di Bartolomeo, Antonio; Luongo, Giuseppe; Giubileo, Filippo; Funicello, Nicola; Niu, Gang; Schroeder, Thomas; Lisker, Marco; Lupina, Grzegorz

    2017-06-01

    We propose a hybrid device consisting of a graphene/silicon (Gr/Si) Schottky diode in parallel with a Gr/SiO2/Si capacitor for high-performance photodetection. The device, fabricated by transfer of commercial graphene on low-doped n-type Si substrate, achieves a photoresponse as high as 3 \\text{A} {{\\text{W}}-1} and a normalized detectivity higher than 3.5× {{10}12} \\text{cm} \\text{H}{{\\text{z}}1/2} {{\\text{W}}-1} in the visible range. It exhibits a photocurrent exceeding the forward current because photo-generated minority carriers, accumulated at Si/SiO2 interface of the Gr/SiO2/Si capacitor, diffuse to the Gr/Si junction. We show that the same mechanism, when due to thermally generated carriers, although usually neglected or disregarded, causes the increased leakage often measured in Gr/Si heterojunctions. We perform extensive I-V and C-V characterization at different temperatures and we measure a zero-bias Schottky barrier height of 0.52 eV at room temperature, as well as an effective Richardson constant A **  =  4× {{10}-5} \\text{A} \\text{c}{{\\text{m}}-2} {{\\text{K}}-2} and an ideality factor n≈ 3.6 , explained by a thin (<1 nm) oxide layer at the Gr/Si interface.

  5. Admittance of a-Si:H/c-Si Schottky diodes

    Energy Technology Data Exchange (ETDEWEB)

    Gall, S.; Hirschauer, R.; Braeunig, D. [Hahn-Meitner-Inst., Berlin (Germany). Dept. AT; Kolter, M. [Forschungszentrum Juelich (Germany)

    1996-12-31

    Heterojunction devices, based on hydrogenated amorphous silicon (a-Si:H) and single crystalline silicon (c-Si), are likely candidates for high efficiency solar cells. The authors have measured the admittance (conductance and capacitance) of a-Si:H/c-Si heterostructure Schottky diodes as a function of frequency, temperature and voltage in the dark and under spectral illumination (in the wavelength range between {lambda} = 500nm and {lambda} = 1,200nm). Thus, it is possible to observe the activation/deactivation of trapping-detrapping effects within the a-Si:H layer (near the a-SiH/c-Si interface). They have determined the conduction band offset of the a-Si:H/c-Si heterostructure. The spectral behavior of the admittance is dominated by the absorption of light in the c-Si and the valence band offset of the heterojunction. The authors have also developed an equivalent circuit of the a-Si:H/c-Si heterostructure Schottky diode in the dark, which is capable of describing the measured behavior.

  6. Schottky Barrier Transport for Multiphase Gallium Nitride Nanowire

    Science.gov (United States)

    Hartz, Steven; Xie, Kan; Liu, Zhun; Ayres, Virginia

    2013-03-01

    Our group has shown that gallium nitride nanowires grown by catalyst-free vapor deposition at 850oC have multiple internal crystalline regions that may be zinc blende or wurtzite phase. Stability is enabled by one or more totally coherent (0001)/(111) internal interfaces. Cross-section HRTEM has further demonstrated that, while the transverse nanowire profile appears triangular, it is actually made up of two or more surface orientations corresponding to the multi-phase internal regions. We present results of a transport investigation of these multiphase nanowires within a nanoFET circuit architecture, focusing on injection from the contacts into the nanowires. Experimental results demonstrated that a variety of surface state derived Schottky barriers could be present at the contact-nanowire interfaces. Transport across the Schottky barriers was modeled using a combined thermionic emission-tunnelling approach, leading to information about barrier height, carrier concentrations, and expected temperature behavior. The experimental and theoretical results indicate that with optimal design taking surface and internal structures into account, high current densities can be supported.

  7. Schottky bipolar I-MOS: An I-MOS with Schottky electrodes and an open-base BJT configuration for reduced operating voltage

    Science.gov (United States)

    Kannan, N.; Kumar, M. Jagadesh

    2017-04-01

    In this paper, we have proposed a novel impact ionization MOS (I-MOS) structure, called the Schottky bipolar I-MOS, with Schottky source and drain electrodes and utilizing the open-base bipolar junction transistor (BJT) configuration for achieving reduction in the operating voltage of the I-MOS transistor. We report, using 2-D simulations, a low operating voltage (∼1.1 V) and a low subthreshold swing (∼3.6 mV/Decade). For the corresponding p-i-n I-MOS, the operating voltage is ∼5.5 V. The operating voltage of the Schottky bipolar I-MOS is the lowest reported operating voltage for silicon based I-MOS transistors. The nearly 80% reduction in the operating voltage of the Schottky bipolar I-MOS makes it suitable for applications requiring low operating voltages. The Schottky bipolar I-MOS is also expected to have an improved reliability over the p-i-n I-MOS since high energy carriers, induced by impact ionization near the drain, do not have to pass under the gate region in the channel. The use of Schottky contacts instead of heavily doped source and drain regions and the low channel doping level reduces the required thermal budget for device fabrication. The low operating voltage, low subthreshold swing and possibly improved reliability of the Schottky bipolar I-MOS, makes it a potential solution for applications where steep subthreshold slope transistors are being explored as alternative to the conventional MOS transistor.

  8. Large Lateral Photovoltage Observed in MoS2 Thickness-Modulated ITO/MoS2/p-Si Heterojunctions.

    Science.gov (United States)

    Qiao, Shuang; Zhang, Bin; Feng, Kaiyu; Cong, Ridong; Yu, Wei; Fu, Guangsheng; Wang, Shufang

    2017-05-31

    Molybdenum disulfide (MoS2), as a typical two-dimensional (2D) material, has attracted extensive attention in recent years because of its fascinating optical and electric properties. However, the applications of MoS2 have been mainly in photovoltaic devices, field-effect transistors, photodetectors, and gas sensors. Here, it is demonstrated that MoS2 can be found another important application in position sensitive detector (PSD) based on lateral photovoltaic effect (LPE) in it. The ITO/MoS2(3, 5, 7, 9, 10, 20, 50, 100 nm)/p-Si heterojunctions were successfully prepared with vertically standing nanosheet structure of MoS2. Because of the special structure and the strong light absorption of the relatively thick MoS2 film, the ITO/MoS2/p-Si heterojunction exhibits an abnormal thickness-dependent LPE, which can be ascribed to the n- to p-type transformation of MoS2. Moreover, the LPE of ITO/MoS2/p-Si structure improves greatly because of forward enhanced built-in field by type transformation in a wide spectrum response ranging from visible to near-infrared, especially the noticeable improvement in infrared region, indicating its great potential application in infrared PSDs. This work not only suggest that the ITO/MoS2/p-Si heterojunction shows great potential in LPE-based sensors, but also unveils the importance of type transformation of MoS2 in MoS2-based photoelectric devices besides strong light absorption and suitable bandgap.

  9. Comment on 'Temperature dependence of the current-voltage characteristics of Sn/PANI/p-Si/Al heterojunctions'

    Energy Technology Data Exchange (ETDEWEB)

    Pipinys, P; Rimeika, A [Department of Physics, Vilnius Pedagogical University, Studentu 39, LT-08106 Vilnius (Lithuania)], E-mail: ftfdekanas@vpu.lt

    2008-02-27

    Current-voltage characteristics of Sn/PANI/p-Si/Al heterojunctions, measured in the temperature range 140-280 K by Kaya et al (2007 J. Phys.: Condens. Matter 19 406205), are reinterpreted in the framework of phonon-assisted tunnelling theory, as a free-charge-carrier generation mechanism in the strong electrical field. It is shown that phonon-assisted tunnelling more adequately describes the peculiarities of the variation of I-V data with temperature in PANI polymers. (comment)

  10. Electrical characterization of all-epitaxial Fe/GaN(0001) Schottky tunnel contacts

    Energy Technology Data Exchange (ETDEWEB)

    Fernandez-Garrido, Sergio; Ubben, Kai U.; Herfort, Jens; Gao Cunxu; Brandt, Oliver [Paul-Drude-Institut fuer Festkoerperelektronik, Hausvogteiplatz 5-7, D-10117 Berlin (Germany)

    2012-07-16

    We analyze the properties of Fe Schottky contacts prepared in situ on n-type GaN(0001) by molecular beam epitaxy. In particular, we investigate the suitability of these epitaxial Fe layers for electrical spin injection. Current-voltage-temperature measurements demonstrate pure field emission for Fe/GaN:Si Schottky diodes with [Si]=5 Multiplication-Sign 10{sup 18} cm{sup -3}. The Schottky barrier height of the clean, epitaxial Fe/GaN interface is determined by both current-voltage-temperature and capacitance-voltage techniques to be (1.47{+-}0.09)eV.

  11. Interlayer coupling effects on Schottky barrier in the arsenene-graphene van der Waals heterostructures

    Energy Technology Data Exchange (ETDEWEB)

    Xia, Congxin, E-mail: xiacongxin@htu.edu.cn; Xue, Bin; Wang, Tianxing; Peng, Yuting [Department of Physic, Henan Normal University, Xinxiang 453007 (China); Jia, Yu [School of Physics and Engineering, Zhengzhou University, Zhengzhou 450052 (China)

    2015-11-09

    The electronic characteristics of arsenene-graphene van der Waals (vdW) heterostructures are studied by using first-principles methods. The results show that a linear Dirac-like dispersion relation around the Fermi level can be quite well preserved in the vdW heterostructures. Moreover, the p-type Schottky barrier (0.18 eV) to n-type Schottky barrier (0.31 eV) transition occurs when the interlayer distance increases from 2.8 to 4.5 Å, which indicates that the Schottky barrier can be tuned effectively by the interlayer distance in the vdW heterostructures.

  12. The Co-60 gamma-ray irradiation effects on the Al/HfSiO4/p-Si/Al MOS capacitors

    Science.gov (United States)

    Lok, R.; Kaya, S.; Karacali, H.; Yilmaz, E.

    2017-12-01

    In this work, the initial interface trap density (Nit) to examine device compability for microelectronics and then the Co-60 gamma irradiation responses of Al/HfSiO4/p-Si/Al (MOS) capacitors were investigated in various dose ranges up to 70 Gy. Pre-irradiation response of the devices was evaluated from high frequency (HF) and low frequency (LF) capacitance method and the Nit was calculated as 9.91 × 1011 cm-2 which shows that the HfSiO4/p-Si interface quality is convenient for microelectronics applications. The irradiation responses of the devices were carried out from flat-band and mid-gap voltage shifts obtained from stretch of capacitance characteristics prior to and after irradiation. The results show that the flat band voltages very slightly shifted to positive voltage values demonstrating the enhancement of negative charge trapping in device structure. The sensitivity of the Al/HfSiO4/p-Si/Al MOS capacitors was found to be 4.41 mV/Gy for 300 nm-thick HfSiO4 gate dielectrics. This value approximately 6.5 times smaller compared to the same thickness conventional SiO2 based MOS devices. Therefore, HfSiO4 exhibits crucial irradiation tolerance in gamma irradiation environment. Consequently, HfSiO4 dielectrics may have significant usage for microelectronic technology as a radiation hard material where radiation field exists such as in space applications.

  13. Junction parameters and characterization of Au/n-Ge{sub 15}In{sub 5}Se{sub 80}/p-Si/Al heterojunction

    Energy Technology Data Exchange (ETDEWEB)

    El-Nahass, M.M.; El-Shazly, E.A.A. [Ain Shams University, Physics Department, Faculty of Education, Roxy, Cairo (Egypt); Ali, M.H. [Ain Shams University, Physics Department, Faculty of Science, Abassia, Cairo (Egypt); Zedan, I.T. [High Institute of Engineering and Technology, Basic Science Department, El-Arish, North Sinai (Egypt)

    2016-08-15

    The analysis of the electrical properties of Au/n-Ge{sub 15}In{sub 5}Se{sub 80}/p-Si/Al heterojunction is examined. I-V characteristics show diode-like behavior. The series resistance is found to decrease with increasing the temperature in three different methods of calculations. The thermionic emission mechanism is found to be the operating mechanism at relatively low forward voltages (V < 0.25). While, at relatively high forward voltage, the space charge limited conduction is the operating mechanism. The rectification ratio, ideality factor, barrier height, total trap concentration and built-in voltage are determined. The capacitance-voltage (C-V) characteristics of Au/n-Ge{sub 15}In{sub 5}Se{sub 80}/p-Si/Al heterojunction are also investigated. The I-V curve of the Au/n-Ge{sub 15}In{sub 5}Se{sub 80}/p-Si/Al heterojunction in the dark and after illumination is clarified. (orig.)

  14. Abrupt Schottky Junctions in Al/Ge Nanowire Heterostructures.

    Science.gov (United States)

    Kral, S; Zeiner, C; Stöger-Pollach, M; Bertagnolli, E; den Hertog, M I; Lopez-Haro, M; Robin, E; El Hajraoui, K; Lugstein, A

    2015-07-08

    In this Letter we report on the exploration of axial metal/semiconductor (Al/Ge) nanowire heterostructures with abrupt interfaces. The formation process is enabled by a thermal induced exchange reaction between the vapor-liquid-solid grown Ge nanowire and Al contact pads due to the substantially different diffusion behavior of Ge in Al and vice versa. Temperature-dependent I-V measurements revealed the metallic properties of the crystalline Al nanowire segments with a maximum current carrying capacity of about 0.8 MA/cm(2). Transmission electron microscopy (TEM) characterization has confirmed both the composition and crystalline nature of the pure Al nanowire segments. A very sharp interface between the ⟨111⟩ oriented Ge nanowire and the reacted Al part was observed with a Schottky barrier height of 361 meV. To demonstrate the potential of this approach, a monolithic Al/Ge/Al heterostructure was used to fabricate a novel impact ionization device.

  15. Self assembled silicon nanowire Schottky junction assisted by collagen

    Science.gov (United States)

    Stievenard, Didier; Sahli, Billel; Coffinier, Yannick; Boukherroub, Rabah; Melnyk, Oleg

    2008-03-01

    We present results on self assembled silicon nanowire Schottky junction assisted by collagen fibrous. The collagen is the principle protein of connective human tissues. It presents the double interest to be a low cost biological material with the possibility to be combed as the DNA molecule. First, the collagen was combed on OTS modified surface with gold electrodes. Second, silicon nanowires were grown on silicon substrate by CVD of silane gas (SiH4) at high temperature (500 C) using a vapor-liquid-solid (VLS) process and gold particles as catalysts. In order to increase electrostatic interaction between the collagen and the nanowires, these latters were chemically modified by mercaptopropylmethoxysilane (MPTS), then chemically oxidized. Therefore, the nanowires were transferred from their substrate into water and a drop of it deposited on the surface. Nanowires are only bound to collagen and in particular, in electrode gaps. The formation of spontaneous Schotkty junction is demonstrated by current-voltage characteristics.

  16. Schottky mass- and lifetime-spectrometry of unstable, stored ions

    CERN Document Server

    Bosch, F

    2003-01-01

    GSI is presently the only facility where unstable, highly charged ions far from stability can be produced by in-flight fragmentation and subsequently stored and cooled in an ion storage ring. The mass-to-charge ratio of those stored ions is measured by two complementary methods that have been developed at GSI: Schottky mass-spectrometry, based on the recording of the revolution frequencies of electron-cooled ions, and isochronous mass-spectrometry, applied on short-lived, uncooled ions at the 'transition energy'. Both methods provide a highly efficient, precise and sensitive determination of the nuclear mass of many simultaneously stored ion species. Similarly, the beta lifetimes of stored, unstable nuclei can also be determined. The impact of nuclear masses and lifetimes for both nuclear physics and astrophysics is also addressed.

  17. Diodes Schottky diamant fonctionnant à 200°C

    OpenAIRE

    Monflier, Richard; Isoird, Karine; Cazarré, Alain; Tasselli, Josiane; Servel, Alexandra; ACHARD, Jocelyn; Eon, David

    2015-01-01

    Les caractéristiques courant-tension jusqu'à 200°C de diodes Schottky diamant verticales et pseudo-verticales réalisées dans le cadre du projet DIAMONIX2 sont présentées dans cet article. Sur les différents échantillons testés le taux de fonctionnalité est supérieur à 75%. Pour les diodes verticales la densité de courant atteint 488 A/cm 2 à 200°C, et un courant de fuite < 10-7 A/cm 2 à 50 V. Toutefois, la hauteur de barrière de 1,96 eV et le coefficient d'idéalité de 1,77 sont certainement c...

  18. Diodes Schottky diamant fonctionnant à 200°C

    OpenAIRE

    Monflier, Richard; Isoird, Karine; Cazarre, Alain; Tasselli, Josiane; Servel, Alexandra; ACHARD, Jocelyn; Eon, David; Valdivia Birnbaum, Maria José

    2016-01-01

    International audience; Les caractéristiques courant-tension jusqu'à 200 °C de diodes Schottky diamant verticales et pseudo-verticales réalisées dans le cadre du projet DIAMONIX2 sont présentées dans cet article. Sur les différents échantillons testés le taux de fonctionnalité est supérieur à 75 % et atteint même 100 % pour l'un d'entre eux. Pour les diodes verticales la densité de courant atteint 488 A/cm2 à 200 °C et pour les diodes pseudo-verticales une densité de courant supérieure à 1000...

  19. Graphene-Based Reversible Nano-Switch/Sensor Schottky Diode

    Science.gov (United States)

    Miranda, Felix A.; Meador, Michael A.; Theofylaktos, Onoufrios; Pinto, Nicholas J.; Mueller, Carl H.; Santos-Perez, Javier

    2010-01-01

    This proof-of-concept device consists of a thin film of graphene deposited on an electrodized doped silicon wafer. The graphene film acts as a conductive path between a gold electrode deposited on top of a silicon dioxide layer and the reversible side of the silicon wafer, so as to form a Schottky diode. By virtue of the two-dimensional nature of graphene, this device has extreme sensitivity to different gaseous species, thereby serving as a building block for a volatile species sensor, with the attribute of having reversibility properties. That is, the sensor cycles between active and passive sensing states in response to the presence or absence of the gaseous species.

  20. Mis on papa Jannseni hind ? / Sven Sildnik ; interv. Grete Naaber

    Index Scriptorium Estoniae

    Sildnik, Sven, 1964-

    2006-01-01

    Sven Kivisildnik kirjutas Pärnu linnavalitsuse tellimusel Jannseni sünniaastapäeva peoks näidendi "Johann Woldemar Jannsen ehk Rahvavaenlase hind", mis kantakse ette Koidula muuseumi klassitoas 16. mail. Intervjuu näidendi autori ja esitajaga

  1. A Perspective on a Management Information Systems (MIS) Program Review

    Science.gov (United States)

    Yew, Bee K.

    2008-01-01

    This paper highlights relevant curriculum issues that were identified in a Management Information Systems (MIS) program review undertaken by a group of business faculty in a small regional university. The program review was initiated to improve job marketability of graduates and student enrollment. The review process is described as a collective…

  2. Mis siis juhtus Andres Lapeteusega? / Õie Orav

    Index Scriptorium Estoniae

    Orav, Õie

    2011-01-01

    Režissöör Grigori Kromanovi filmist "Mis juhtus Andres Lapeteusega?" (Tallinnfilm, 1965). Osades: Einari Koppel, Ita Ever, Heino Mandri, Kaljo Kiisk, Uno Loit, Ada Lundver jt. Lühidalt filmi kohta ilmunud arvustustest. Filmi näeb ETV2-s sarjas "Unustatud filmid"

  3. Pildid, mis ei jäta rahule / Krista Kumberg

    Index Scriptorium Estoniae

    Kumberg, Krista, 1959-

    2009-01-01

    Moskva kunstnikeühenduse Gruppa Zavtrak illustratsiooninäitusest, mis on avatud Eesti lastekirjanduse keskuses ja mille korraldajaks Tallinnas on Viive Noor. Vt. ka: Pildid näituselt: 1. Jevgeni Antonenkov: Y: MOrits "Luule", 2. Igor Oleinikov: L. Carrol "Alice Imedemaal", 3. Denis Gordejev: "Beethoven", 4. Victoria Fomina: W. Shakespeare "Suveöö unenägu"

  4. MILREM extends THeMIS mission set / Huw Williams

    Index Scriptorium Estoniae

    Williams, Huw

    2016-01-01

    Eesti kaitsetehnika ettevõte MILREM OÜ täiendab oma relvasüsteemi THeMIS ja teeb selleks koostööd mitmete firmadega. Tulevikus soovitakse lisaks Eesti kaitseväele teha koostööd ka Läti kaitseväega ja kasutada sõjatehnikat sealsetel õppustel

  5. Mis ikkagi teeb Eestist Uganda? / Marja-Liisa Alop

    Index Scriptorium Estoniae

    Alop, Marja-Liisa

    2006-01-01

    Eesti üliõpilaskondade liidu juhatuse aseesimees M.-L. Alop kirjutab vastuse M. Heidmetsa artiklile 6. jaan. Eesti Päevalehes "Eestis nagu Ugandas", kus tõstatati Eestis üldise õppemaksu kehtestamise vajadus, mis vähendab vähem kindlustatute võimalusi kõrgharidust omandada

  6. Tõnda: vistrik, mis juhtis BAM-i / Jaanus Piirsalu

    Index Scriptorium Estoniae

    Piirsalu, Jaanus, 1973-

    2010-01-01

    Tõnda linnast Venemaal, mis on üks ligi 400-st riigi ametlikust monolinnast. Teadlane Jevgeni Gontmahher väidab, et kui majanduses tuleb uus mõõn, muutub monolinnade olukord hullemaks kui selle kriisi ajal, kuid erinevalt paljudest Vene monolinnadest veab Tõndal sellega, et neil on BAM

  7. Tin oxide - silicon dioxide - silicon MIS solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Llabres, K.; Dominguez, E.; Lora-Tamayo, E.; Arjona, F.

    1981-01-01

    The results obtained in tin oxide-silicon dioxide-n type silicon Schottky barrier solar cells are presented. Samples were prepared in a two-zone furnace where the thermal oxidation of the wafer and the SnO/sub 2/ deposition were carried out without further handling. The tin oxide layer was grown using a gas transport method in an open tube. The characteristic parameters of the solar cell performance gave the following results: short circuit current density.21 mA/cm/sup 2/, open circuit voltage.550 mV. 7 refs.

  8. Lake level fluctuations and catchment dynamics at Lake Ohrid (Macedonia, Albania) during MIS6 and MIS5

    Science.gov (United States)

    Francke, Alexander; Wagner, Bernd; Just, Janna; Sadori, Laura; Masi, Alessia; Vogel, Hendrik; Lindhorst, Katja; Krastel, Sebastian; Dosseto, Anthony; Rothacker, Leo; Leicher, Niklas; Gromig, Raphael

    2016-04-01

    Lake Ohrid, presumably the oldest lake of Europe located at the border of Macedonia and Albania, is about 30 km long, 15 km wide, and up to 290 m deep. In 2013, an ICDP deep drilling campaign was carried out under the umbrella of the Scientific Collaboration on Past Speciation Conditions in Lake Ohrid (SCOPSCO) project. At the main drill site (DEEP) in the central part of Lake Ohrid, the uppermost 568 m from a total sediment fill of ca. 700 m were recovered. Initial data from core catcher material indicate that the sediment sequence covers more than 1.2 million years. An age model, which is based on 11 tephrostratigragphic tie points and on tuning of biogeochemical proxy data versus orbital parameters reveals that that the upper 247 m of the DEEP site sequence cover the time period between 637 ka (MIS16) and the present. Inhere, we present sedimentological, (bio-)geochemical, environmental magnetic, and pollen data for the time period between MIS6 (191 ka) and MIS5 (71 ka). The data imply that MIS6 was one of the most severe glacial periods, while MIS5 was likely one of the more pronounced interglacial during the past 637 kyrs. The repercussions of these high amplitude climatic and environmental variations during this period are recorded in the sedimentological archive of Lake Ohrid. Previous studies based on hydro-acoustic and sediment core data from the northeastern part of the lake basin have shown that the lake level of Lake Ohrid was likely 60 m lower during MIS6. The ˜60 m lower lake level at Lake Ohrid during MIS6 can at least partly be explained by the ongoing subsidence, which persists in the basin until today. However, in the DEEP site sediments, the MIS6/MIS5 transition occurs at ca. 50 m sediment depth. This implies that climate-induced lake level fluctuation at Lake Ohrid are less severe compared for example to Lake Van (Turkey), were a 260 m lower lake level has been reported for the Younger Dryas. The imprint of the environmental variations between

  9. Validation and Analysis of a Multi-site MIS Prospective Registry Through Sub-analysis of an MIS TLIF Subgroup

    Science.gov (United States)

    Raiszadeh, Kamshad; Raiszadeh, Ramin; Kim, Paul; Doerr, Todd; Siddiqi, Farhan; LaMotta, Ivan; Park, Paul; Templin, Cary; Gill, Sandeep; Liang, Kevin; Kim, Choll W.

    2014-01-01

    Study Design Retrospective analysis of multi-site, prospectively collected database. Objective To assess the validity and utility of a prospective spine registry by sub-analysis of patients treated with MIS TLIF. Background The MIS registry is a large-scale, multi-center series of prospectively collected clinical information on outcomes, complications, and adverse events for minimally invasive spine procedures for the treatment of degenerative lumbar conditions. Methods Analysis was performed on the MIS Prospective Registry database. A subgroup of patients treated by MIS TLIF technique was identified. Statistical analyses were performed on pre and post-operative data collected using validated health related quality of life outcome tools. Missing 1-year patient follow-up data was obtained through progressive correspondence modalities. Results Data analysis was performed on 98 MIS TLIF patients (56 female, 42 male) with a median age of 64.5 years (range 25-91 years) which were extracted from a total registry population of 478 patients. The one year follow-up rate was 87%. A total of 64 single-level, 23 two-level, 3 three-level, and 3 combined TLIFs staged with an MIS lateral procedure were included. The primary surgical indications were spondylolisthesis (27%), central stenosis (25%), foraminal stenosis (14%), post-laminectomy syndrome (14%) and degenerative scoliosis (6%). The peri-operative blood transfusion rate was 3%. Complications included intraoperative dural tear (n = 3), deep wound infection (n = 2), superficial dehiscence/cellulitis (n = 2). There was a 4% re-operation rate at the 1 year post-operative time point. Half of patients were discharged within 2 days (range 1-11 days, mean 2.97 days, median 2 days). All patients that were discharged on the first post-operative day (n = 14) underwent a single-level MIS TLIF procedure and had significantly lower pre-op disability index score than those discharged on POD 3-5 (43.7 ± 15.5 vs. 56.0 ± 18.3, p = 0

  10. The properties of transparent TiO2 films for Schottky photodetector

    Directory of Open Access Journals (Sweden)

    Sung-Ho Park

    2017-08-01

    Full Text Available In this data, the properties of transparent TiO2 film for Schottky photodetector are presented for the research article, entitled as “High-performing transparent photodetectors based on Schottky contacts” (Patel et al., 2017 [1]. The transparent photoelectric device was demonstrated by using various Schottky metals, such as Cu, Mo and Ni. This article mainly shows the optical transmittance of the Ni-transparent Schottky photodetector, analyzed by the energy dispersive spectroscopy and interfacial TEM images for transparency to observe the interface between NiO and TiO2 film. The observation and analyses clearly show that no pinhole formation in the TiO2 film by Ni diffusion. The rapid thermal process is an effective way to form the quality TiO2 film formation without degradation, such as pinholes (Qiu et al., 2015 [2]. This thermal process may apply to form functional metal oxide layers for solar cells and photodetectors.

  11. Tuning of Schottky barrier height of Al/n-Si by electron beam irradiation

    Energy Technology Data Exchange (ETDEWEB)

    Vali, Indudhar Panduranga [Manipal Institute of Technology, Manipal University, Manipal 576104 (India); Shetty, Pramoda Kumara, E-mail: pramod.shetty@manipal.edu [Manipal Institute of Technology, Manipal University, Manipal 576104 (India); Mahesha, M.G. [Manipal Institute of Technology, Manipal University, Manipal 576104 (India); Petwal, V.C.; Dwivedi, Jishnu [Raja Ramanna Centre for Advanced Technology, Department of Atomic Energy, Government of India, Indore 452012 (India); Choudhary, R.J. [UGC-DAE Consortium for Scientific Research, University Campus, Khandwa Road, Indore 452017 (India)

    2017-06-15

    Highlights: • Tuning of Schottky barrier height has been achieved by electron beam irradiation at different doses on n-Si wafer prior to the fabrication of Schottky contact. • The XPS analyses have shown irradiation induced defects and the formation of several localized chemical states in Si/SiOx interface that influences the Schottky barrier height. • High ideality factor indicates metal-insulator-semiconductor configuration of the Schottky diode and the inhomogeneous nature of the Schottky barrier height. • The modifications in I–V characteristics have been observed as a function of electron dose. This is caused due to changes in the Schottky diode parameters and different transport mechanisms. - Abstract: The effect of electron beam irradiation (EBI) on Al/n-Si Schottky diode has been studied by I–V characterization at room temperature. The behavior of the metal-semiconductor (MS) interface is analyzed by means of variations in the MS contact parameters such as, Schottky barrier height (Φ{sub B}), ideality factor (n) and series resistance (R{sub s}). These parameters were found to depend on the EBI dose having a fixed incident beam of energy 7.5 MeV. At different doses (500, 1000, 1500 kGy) of EBI, the Schottky contacts were prepared and extracted their contact parameters by applying thermionic emission and Cheung models. Remarkably, the tuning of Φ{sub B} was observed as a function of EBI dose. The improved n with increased Φ{sub B} is seen for all the EBI doses. As a consequence of which the thermionic emission is more favored. However, the competing transport mechanisms such as space charge limited emission, tunneling and tunneling through the trap states were ascribed due to n > 1. The analysis of XPS spectra have shown the presence of native oxide and increased radiation induced defect states. The thickness variation in the MS interface contributing to Schottky contact behavior is discussed. This study explains a new technique to tune

  12. Carrier transport in reverse-biased graphene/semiconductor Schottky junctions

    OpenAIRE

    Tomer, D.; Rajput, S.; Hudy, L. J.; Li, C. H.; Li, L.

    2015-01-01

    Reverse-biased graphene (Gr)/semiconductor Schottky diodes exhibit much enhanced sensitivity for gas sensing. However, carrier transport across the junctions is not fully understood yet. Here, Gr/SiC, Gr/GaAs and Gr/Si Schottky junctions under reverse-bias are investigated by temperature-dependent current-voltage measurements. A reduction in barrier height with increasing reverse-bias is observed for all junctions, suggesting electric-field enhanced thermionic emission. Further analysis of th...

  13. Simulation of a perfect CVD diamond Schottky diode steep forward current–voltage characteristic

    Energy Technology Data Exchange (ETDEWEB)

    Kukushkin, V.A., E-mail: vakuk@appl.sci-nnov.ru [Institute of Applied Physics of the Russian Academy of Science, 46 Ulyanov St., 603950 Nizhny Novgorod (Russian Federation); Nizhny Novgorod State University named after N.I. Lobachevsky, 23 Gagarin pr., 603950 Nizhny Novgorod (Russian Federation)

    2016-10-01

    The kinetic equation approach to the simulation of the perfect CVD diamond Schottky diode current–voltage characteristic is considered. In result it is shown that the latter has a significantly steeper forward branch than that of perfect devices of such a type on usual semiconductors. It means that CVD diamond-based Schottky diodes have an important potential advantage over analogous devices on conventional materials.

  14. Barrier characteristics of Pt/Ru Schottky contacts on n-type GaN ...

    Indian Academy of Sciences (India)

    voltage (C–V) characteristics of. Ru/Pt/n-GaN Schottky diodes in the temperature range 100–420 K. The calculated values of barrier height and ide- ality factor for the Ru/Pt/n-GaN Schottky diode are 0·73 eV and 1·4 at 420 K, 0·18 eV and 4·2 at 100 K ...

  15. Barrier height enhancement of Ni/GaN Schottky diode using Ru based passivation scheme

    Energy Technology Data Exchange (ETDEWEB)

    Kumar, Ashish, E-mail: dr.akmr@gmail.com; Kumar, Mukesh; Singh, R. [Department of Physics, Indian Institute of Technology Delhi, New Delhi 110016 (India); Kaur, Riajeet [Department of Physics, National Institute of Technology, Kurukshetra 136119 (India); Joshi, Amish G. [CSIR - National Physical Laboratory, Dr. K.S. Krishnan Road, New Delhi - 110 012 (India); Vinayak, Seema [Solid State Physical Laboratory, Timarpur, Delhi 110054 (India)

    2014-03-31

    Wet chemical passivation of n-GaN surface using Ru based solution has been reported. X-ray photoelectron spectroscopy characterization of the GaN surface revealed removal of surface oxides by the introduction of Ru complex species. Ni/n-GaN Schottky barrier diodes were fabricated on passivated GaN and a remarkable improvement in Schottky barrier height from 0.76 eV to 0.92 eV was observed.

  16. Ecosystem change during MIS4 and early MIS 3: Evidence from Middle Stone Age sites in South Africa

    CSIR Research Space (South Africa)

    Hall, G

    2010-11-01

    Full Text Available Several Middle Stone Age (MSA) site in southern Africa present evidence of environmental changes during Marine Isotope Stages (MIS) 4 and 3 between 70ka and 50ka. Of these, Sibudu Cave, KwaZulu-Natal, has yielded a detailed record of how globalscale...

  17. A MIS 9/MIS 8 speleothem record of hydrological variability from Macedonia (F.Y.R.O.M.)

    Science.gov (United States)

    Regattieri, Eleonora; Zanchetta, Giovanni; Isola, Ilaria; Bajo, Petra; Perchiazzi, Natale; Drysdale, Russell N.; Boschi, Chiara; Hellstrom, John C.; Francke, Alexander; Wagner, Bernd

    2018-03-01

    The period corresponding to Marine Isotope Stages 9 (MIS 9) offers the opportunity to study orbital and sub-orbital scale climate variability under boundary conditions different from those of better studied intervals such as the Holocene and the Last Interglacial. Yet, it is poorly represented in independently-dated continental archives around the Mediterranean Region. Here, we present a speleothem stable isotope record (δ18O and δ13C) from the Former Yugoslavian Republic of Macedonia (F.Y.R.O.M., southern Balkans), which consists of two periods of growth broadly covering the ca. 332 to 292 ka and the ca. 264 to 248 ka intervals (MIS 9e-b and late MIS 8). We interpret the speleothem δ18O as mostly related to regional hydrology, with variations that can be interpreted as due to changes in rainfall amount, with higher/lower values associated to drier/wetter condition. This interpretation is corroborated by a change in mineralogical composition between aragonite and calcite at ca. 328 ka, which marks increasing precipitation at the onset of MIS 9 and occurs within a trend of decreasing δ18O values. Also the comparison with the multiproxy climate record available from the nearby Lake Ohrid seems to support the proposed interpretation. The MIS 9e interglacial appears to be characterized by wettest conditions between ca. 326 and 321 ka, i.e. lasting ca. 5 kyr. Decreasing precipitation and enhanced millennial scale variability matches the glacial inception (MIS9 d to b), with drier events at ca. 319 ka (ca. 2 kyr long) and 310 ka (ca. 1 kyr long), and a major rainfall reduction between 306 and 298 ka. The latter is followed by a prominent wetter period between 298 and 295 ka, for which carbon data values suggest high infiltration rate. Rainfall decreases again after 295 ka, and remain low until the growth interruption at ca. 292 ka. Resumption of the growth and progressive soil development, expressed by the carbon isotope record, occurred during the late part of MIS 8

  18. Mullerian Inhibiting Substances (MIS) Augments IFN-gamma Mediated Inhibition of Breast Cancer Cell Growth

    National Research Council Canada - National Science Library

    Gupta, Vandana

    2006-01-01

    MIS is a member of the TGF family. The purpose of this study is to test the hypothesis that MIS and IFN-gamma might be more effective in the inhibition of breast cancer cell growth than either agent alone...

  19. File list: Oth.ALL.10.mis-12.AllCell [Chip-atlas[Archive

    Lifescience Database Archive (English)

    Full Text Available Oth.ALL.10.mis-12.AllCell ce10 TFs and others mis-12 All cell types SRX331355,SRX33...1356 http://dbarchive.biosciencedbc.jp/kyushu-u/ce10/assembled/Oth.ALL.10.mis-12.AllCell.bed ...

  20. Effect of temperature and post-deposition annealing on Schottky barrier characterization of Bromoindium phthalocyanine/aluminum interfaces

    Energy Technology Data Exchange (ETDEWEB)

    Azim-Araghi, M.E.; Sahebi, R., E-mail: ramezan.sahebi@yahoo.com

    2014-01-15

    To investigate DC electrical properties and Schottky barrier characterization between BrInPc/Al interfaces, some thin films of BrInPc in sandwich form were prepared with Al electrodes. J–V characterization showed ohmic behavior at lower voltages upto 0.3 V followed by Schottky emission conduction mechanism at higher voltages. In the Schottky region two different slopes in the plot of ln (J) against V{sup 1/2} were observed and two different values of Schottky barrier height was determined for these regions. To investigate the effect of temperature on Schottky barrier behavior between BrInPc and aluminum interface, we studied the J–V characteristics of devices at the temperature range of 298–373 K. By increasing the temperature, the width of Schottky depletion region decreased and the Schottky barrier height increased, and at temperatures higher than 333 K the dominant conduction mechanism changed to Poole–Frenkel type. For annealed samples at 373 K and 423 K, the Schottky barrier height increased as the result of thermal annealing and increasing annealing temperature. The width of the Schottky depletion region decreased by annealing and increasing the annealing temperature.

  1. Transport mechanisms and interface properties of W/ p-InP Schottky diode at room temperature

    Science.gov (United States)

    Sri Silpa, D.; Sreehith, P.; Rajagopal Reddy, V.; Janardhanam, V.

    2016-04-01

    We have investigated the electrical properties and current transport mechanisms of W/ p-InP Schottky diode using current-voltage ( I- V), capacitance-voltage-frequency ( C- V- f) and conductance-frequency ( G- f) techniques at room temperature. The W/ p-InP Schottky diode exhibits a good rectifying behavior. Measurements show that the Schottky barrier height (SBH) and ideality factor of the W/ p-InP Schottky diode are 0.84 eV ( I- V)/0.98 eV ( C- V) and 1.24, respectively. Also, the SBH and series resistance R s of the diode are extracted by Cheung's functions and the values are in good agreement with each other. Ohmic and space charge-limited conduction mechanisms are found to govern the current flow in the W/ p-InP Schottky diode at low and high forward bias conditions, respectively. Experimental results reveal that the Poole-Frenkel mechanism is found to be dominant in the reverse bias region of W/ p-InP Schottky diode. Further, the interface state density N ss and their relaxation times τ of the W/ p-InP Schottky diode are estimated from the forward bias C- f and G- f characteristics and the values are in the range from 1.95 × 1013 eV-1 cm-2 and 3.38 × 10-5 s at (0.81- E V ) eV to 1.78 × 1013 eV-1 cm-2 and 2.78 × 10-6 s at (0.30- E V ) eV, respectively. Both the N ss and τ show an exponential rise with bias from the top of the valance band toward the mid gap.

  2. Analytical modeling of trilayer graphene nanoribbon Schottky-barrier FET for high-speed switching applications.

    Science.gov (United States)

    Rahmani, Meisam; Ahmadi, Mohammad Taghi; Abadi, Hediyeh Karimi Feiz; Saeidmanesh, Mehdi; Akbari, Elnaz; Ismail, Razali

    2013-01-30

    Recent development of trilayer graphene nanoribbon Schottky-barrier field-effect transistors (FETs) will be governed by transistor electrostatics and quantum effects that impose scaling limits like those of Si metal-oxide-semiconductor field-effect transistors. The current-voltage characteristic of a Schottky-barrier FET has been studied as a function of physical parameters such as effective mass, graphene nanoribbon length, gate insulator thickness, and electrical parameters such as Schottky barrier height and applied bias voltage. In this paper, the scaling behaviors of a Schottky-barrier FET using trilayer graphene nanoribbon are studied and analytically modeled. A novel analytical method is also presented for describing a switch in a Schottky-contact double-gate trilayer graphene nanoribbon FET. In the proposed model, different stacking arrangements of trilayer graphene nanoribbon are assumed as metal and semiconductor contacts to form a Schottky transistor. Based on this assumption, an analytical model and numerical solution of the junction current-voltage are presented in which the applied bias voltage and channel length dependence characteristics are highlighted. The model is then compared with other types of transistors. The developed model can assist in comprehending experiments involving graphene nanoribbon Schottky-barrier FETs. It is demonstrated that the proposed structure exhibits negligible short-channel effects, an improved on-current, realistic threshold voltage, and opposite subthreshold slope and meets the International Technology Roadmap for Semiconductors near-term guidelines. Finally, the results showed that there is a fast transient between on-off states. In other words, the suggested model can be used as a high-speed switch where the value of subthreshold slope is small and thus leads to less power consumption.

  3. Alternative current source based Schottky contact with additional electric field

    Science.gov (United States)

    Mamedov, R. K.; Aslanova, A. R.

    2017-07-01

    Additional electric field (AEF) in the Schottky contacts (SC) that covered the peripheral contact region wide and the complete contact region narrow (as TMBS diode) SC. Under the influence of AEF is a redistribution of free electrons produced at certain temperatures of the semiconductor, and is formed the space charge region (SCR). As a result of the superposition of the electric fields SCR and AEF occurs the resulting electric field (REF). The REF is distributed along a straight line perpendicular to the contact surface, so that its intensity (and potential) has a minimum value on the metal surface and the maximum value at a great distance from the metal surface deep into the SCR. Under the influence of AEF as a sided force the metal becomes negative pole and semiconductor - positive pole, therefore, SC with AEF becomes an alternative current source (ACS). The Ni-nSi SC with different diameters (20-1000 μm) under the influence of the AEF as sided force have become ACS with electromotive force in the order of 0.1-1.0 mV, which are generated the electric current in the range of 10-9-10-7 A, flowing through the external resistance 1000 Ohm.

  4. Schottky-contact plasmonic dipole rectenna concept for biosensing.

    Science.gov (United States)

    Alavirad, Mohammad; Mousavi, Saba Siadat; Roy, Langis; Berini, Pierre

    2013-02-25

    Nanoantennas are key optical components for several applications including photodetection and biosensing. Here we present an array of metal nano-dipoles supporting surface plasmon polaritons (SPPs) integrated into a silicon-based Schottky-contact photodetector. Incident photons coupled to the array excite SPPs on the Au nanowires of the antennas which decay by creating "hot" carriers in the metal. The hot carriers may then be injected over the potential barrier at the Au-Si interface resulting in a photocurrent. High responsivities of 100 mA/W and practical minimum detectable powers of -12 dBm should be achievable in the infra-red (1310 nm). The device was then investigated for use as a biosensor by computing its bulk and surface sensitivities. Sensitivities of ∼ 250 nm/RIU (bulk) and ∼ 8 nm/nm (surface) in water are predicted. We identify the mode propagating and resonating along the nanowires of the antennas, we apply a transmission line model to describe the performance of the antennas, and we extract two useful formulas to predict their bulk and surface sensitivities. We prove that the sensitivities of dipoles are much greater than those of similar monopoles and we show that this difference comes from the gap in dipole antennas where electric fields are strongly enhanced.

  5. Electric and photoelectric properties of n-AgInSe2/ p-Si heterojunction diode fabricated by successive layer deposition

    Science.gov (United States)

    Kaleli, Murat; Aldemir, Durmuş Ali; Parlak, Mehmet

    2017-09-01

    Thin films of AgInSe2 ternary compound were grown by a successive process in which the production of AIS-Ag-AIS-Ag-AIS-Ag layers was deposited by e-beam and thermal evaporation on p-type silicon substrates. The formation of a stoichiometric AgInSe2 thin film with 75.2% crystallinity was achieved and the film had homogenous and smooth surfaces. n-AgInSe2/ p-Si structure has exhibited good rectifying behavior with rectification ratio of 3.99 × 103. The ideality factor and saturation current were found to be 1.74 and 2.71 × 10-7 A, respectively. The n-AgInSe2/ p-Si heterojunction diode exhibited non-ideal reverse-bias capacitance-voltage ( C -2- V) characteristic due to fully depletion of n-AgInSe2 side. The basic photovoltaic parameters of the diode such as open-circuit voltage ( V oc), short-circuit current ( I sc), and fill factor (FF) were obtained as 0.49 V, 4.03 mA, and 27.65%, respectively.

  6. A study of Eu incorporated ZnO thin films: An application of Al/ZnO:Eu/p-Si heterojunction diode

    Energy Technology Data Exchange (ETDEWEB)

    Turgut, G. [Department of Basic Sciences, Faculty of Science, Erzurum Technical University, Erzurum, 25240 (Turkey); Duman, S., E-mail: sduman@atauni.edu.tr [Department of Physics, Faculty of Science, Ataturk University, Erzurum, 25240 (Turkey); Sonmez, E. [Department of Physics, Faculty of K.K. Education, Ataturk University, Erzurum, 25240 (Turkey); Ozcelik, F.S. [Department of Physics, Faculty of Science, Ataturk University, Erzurum, 25240 (Turkey)

    2016-04-15

    Highlights: • Eu incorporated ZnO thin films were grown by sol–gel spin coating. • The influence of Eu contribution on features of ZnO was investigated. • Al/ZnO:Eu/p-Si heterojunction diodes were also fabricated. • The diode parameters were calculated from I–V measurements. - Abstract: In present work, the pure and europium (Eu) incorporated zinc oxide (ZnO) thin films were deposited with sol-gel spin coating by using zinc acetate dehydrate and Eu (III) chloride salts. The coated films were examined by means of XRD, AFM and UV/VIS spectrophotometer. The ZnO hexagonal wurtzite nanoparticles with (002) preferential direction were observed for all films. The values of crystallite size, micro-strain and surface roughness continuously increased from 21 nm, 1.10 × 10{sup −3} and 2.43 nm to the values of 35.56 nm, 1.98 × 10{sup −3} and 28.99 nm with Eu doping, respectively. The optical band gap value of the pure ZnO initially increased from 3.296 eV to 3.328 eV with Eu doping up to 2 at.% doping level, then it started to decrease with more Eu content. The electrical features of Al/n-ZnO:Eu/p-Si heterojunction diodes were inquired by current-voltage (I–V) measurements at the room temperature.

  7. Characterization of ZnO thin films grown on different p-Si substrate elaborated by solgel spin-coating method

    Energy Technology Data Exchange (ETDEWEB)

    Chebil, W., E-mail: Chbil.widad@live.fr [Laboratoire Physico-chimie des Matériaux, Unité de Service Commun de Recherche “High resolution X-ray diffractometer”, Département de Physique, Université de Monastir, Faculté des Sciences de Monastir, Avenue de l’Environnement, 5019 Monastir (Tunisia); Fouzri, A. [Laboratoire Physico-chimie des Matériaux, Unité de Service Commun de Recherche “High resolution X-ray diffractometer”, Département de Physique, Université de Monastir, Faculté des Sciences de Monastir, Avenue de l’Environnement, 5019 Monastir (Tunisia); Institut Supérieur des Sciences Appliquées et de Technologie de Sousse, Université de Sousse (Tunisia); Fargi, A. [Laboratoire de Microélectronique et Instrumentation, Faculté des Sciences de Monastir, Université de Monastir, Avenue de l’environnement, 5019 Monastir (Tunisia); Azeza, B.; Zaaboub, Z. [Laboratoire Micro-Optoélectroniques et Nanostructures, Faculté des Sciences de Monastir, Université de Monastir, Avenue de l' environnement, 5019 Monastir (Tunisia); and others

    2015-10-15

    Highlights: • High quality ZnO thin films grown on different p-Si substrates were successful obtained by sol–gel process. • PL measurement revealed that ZnO thin film grown on porous Si has the better optical quality. • I–V characteristics for all heterojunctions exhibit successful diode formation. • The diode ZnO/PSi shows a better photovoltaic effect under illumination with a maximum {sub Voc} of 0.2 V. - Abstract: In this study, ZnO thin films are deposited by sol–gel technique on p-type crystalline silicon (Si) with [100] orientation, etched silicon and porous silicon. The structural analyses showed that the obtained thin films were polycrystalline with a hexagonal wurtzite structure and preferentially oriented along the c-axis direction. Morphological study revealed the presence of rounded and facetted grains irregularly distributed on the surface of all samples. PL spectra at room temperature revealed that ZnO thin film grown on porous Si has a strong UV emission with low defects in the visible region comparing with ZnO grown on plat Si and etched Si surface. The heterojunction parameters were evaluated from the (I–V) under dark and illumination at room temperature. The ideality factor, barrier height and series resistance of heterojunction grown on different p-Si substrates are determined by using different methods. Best electrical properties are obtained for ZnO layer deposited on porous silicon.

  8. Spin valve-like magnetic tunnel diode exhibiting giant positive junction magnetoresistance at low temperature in Co2MnSi/SiO2/p-Si heterostructure

    Science.gov (United States)

    Maji, Nilay; Kar, Uddipta; Nath, T. K.

    2018-02-01

    The rectifying magnetic tunnel diode has been fabricated by growing Co2MnSi (CMS) Heusler alloy film carefully on a properly cleaned p-Si (100) substrate with the help of electron beam physical vapor deposition technique and its structural, electrical and magnetic properties have been experimentally investigated in details. The electronic- and magneto-transport properties at various isothermal conditions have been studied in the temperature regime of 78-300 K. The current-voltage ( I- V) characteristics of the junction show an excellent rectifying magnetic tunnel diode-like behavior throughout that temperature regime. The current ( I) across the junction has been found to decrease with the application of a magnetic field parallel to the plane of the CMS film clearly indicating positive junction magnetoresistance (JMR) of the heterostructure. When forward dc bias is applied to the heterostructure, the I- V characteristics are highly influenced on turning on the field B = 0.5 T at 78 K, and the forward current reduces abruptly (99.2% current reduction at 3 V) which is nearly equal to the order of the magnitude of the current observed in the reverse bias. Hence, our Co2MnSi/SiO2/p-Si heterostructure can perform in off ( I off)/on ( I on) states with the application of non-zero/zero magnetic field like a spin valve at low temperature (78 K).

  9. SST and ice sheet impacts on the MIS-13 climate

    Energy Technology Data Exchange (ETDEWEB)

    Muri, Helene; Berger, Andre; Yin, Qiuzhen; Sundaram, Suchithra [Universite catholique de Louvain, Georges Lemaitre Centre for Earth and Climate Research (TECLIM), Earth and Life Institute (ELI), Louvain la Neuve (Belgium); Voldoire, Aurore; Melia, David Salas Y. [CNRM-GAME Meteo-France/CNRS, Toulouse Cedex (France)

    2012-10-15

    As a first qualitative assessment tool, LOVECLIM has been used to investigate the interactions between insolation, ice sheets and the East Asian Monsoon at the Marine Isotopic Stage 13 (MIS-13) in work by Yin et al. (Clim Past 4:79-90, 2008, Clim Past 5:229-243, 2009). The results are in need of validation with a more sophisticated model, which is done in this work with the ARPEGE atmospheric general circulation model. As in the Earth system Model of Intermediate Complexity, LOVECLIM, ARPEGE shows that the northern hemispheric high insolation in summer leads to strong MIS-13 monsoon precipitation. Data from the Chinese Loess Plateau indicate that MIS-13 was locally a warm and humid period (Guo et al. in Clim Past 5:21-31, 2009; Yin and Guo in Chin Sci Bull 51(2):213-220, 2006). This is confirmed by these General Circulation Model (GCM) results, where the MIS-13 climate is found to be hotter and more humid both in the presence and absence of any added ice sheets. LOVECLIM found that the combined effects of the ice sheets and their accompanying SSTs contribute to more precipitation in eastern China, whilst in ARPEGE the impact is significant in northeastern China. Nonetheless the results of ARPEGE confirm the counter-intuitive results of LOVECLIM where ice sheets contribute to enhance monsoon precipitation. This happens through a topography induced wave propagating through Eurasia with an ascending branch over northeastern China. A feature which is also seen in LOVECLIM. The SST forcing in ARPEGE results in a strong zonal temperature gradient between the North Atlantic and east Eurasia, which in turn triggers an atmospheric gravity wave. This wave induces a blocking Okhotskian high, preventing the northwards penetration of the Meiyu monsoon front. The synergism between the ice sheets and SST is found through the factor separation method, yielding an increase in the Meiyu precipitation, though a reduction of the Changma precipitation. The synergism between the ice

  10. Investigation of significantly high barrier height in Cu/GaN Schottky diode

    Energy Technology Data Exchange (ETDEWEB)

    Garg, Manjari, E-mail: meghagarg142@gmail.com; Kumar, Ashutosh; Singh, R. [Department of Physics, Indian Institute of Technology, Delhi, Hauz Khas, New Delhi-110016 (India); Nagarajan, S.; Sopanen, M. [Department of Micro and Nanosciences, Aalto University, P.O. Box 13500, FI-00076, Aalto (Finland)

    2016-01-15

    Current-voltage (I-V) measurements combined with analytical calculations have been used to explain mechanisms for forward-bias current flow in Copper (Cu) Schottky diodes fabricated on Gallium Nitride (GaN) epitaxial films. An ideality factor of 1.7 was found at room temperature (RT), which indicated deviation from thermionic emission (TE) mechanism for current flow in the Schottky diode. Instead the current transport was better explained using the thermionic field-emission (TFE) mechanism. A high barrier height of 1.19 eV was obtained at room temperature. X-ray photoelectron spectroscopy (XPS) was used to investigate the plausible reason for observing Schottky barrier height (SBH) that is significantly higher than as predicted by the Schottky-Mott model for Cu/GaN diodes. XPS measurements revealed the presence of an ultrathin cuprous oxide (Cu{sub 2}O) layer at the interface between Cu and GaN. With Cu{sub 2}O acting as a degenerate p-type semiconductor with high work function of 5.36 eV, a high barrier height of 1.19 eV is obtained for the Cu/Cu{sub 2}O/GaN Schottky diode. Moreover, the ideality factor and barrier height were found to be temperature dependent, implying spatial inhomogeneity of barrier height at the metal semiconductor interface.

  11. Investigation of significantly high barrier height in Cu/GaN Schottky diode

    Directory of Open Access Journals (Sweden)

    Manjari Garg

    2016-01-01

    Full Text Available Current-voltage (I-V measurements combined with analytical calculations have been used to explain mechanisms for forward-bias current flow in Copper (Cu Schottky diodes fabricated on Gallium Nitride (GaN epitaxial films. An ideality factor of 1.7 was found at room temperature (RT, which indicated deviation from thermionic emission (TE mechanism for current flow in the Schottky diode. Instead the current transport was better explained using the thermionic field-emission (TFE mechanism. A high barrier height of 1.19 eV was obtained at room temperature. X-ray photoelectron spectroscopy (XPS was used to investigate the plausible reason for observing Schottky barrier height (SBH that is significantly higher than as predicted by the Schottky-Mott model for Cu/GaN diodes. XPS measurements revealed the presence of an ultrathin cuprous oxide (Cu2O layer at the interface between Cu and GaN. With Cu2O acting as a degenerate p-type semiconductor with high work function of 5.36 eV, a high barrier height of 1.19 eV is obtained for the Cu/Cu2O/GaN Schottky diode. Moreover, the ideality factor and barrier height were found to be temperature dependent, implying spatial inhomogeneity of barrier height at the metal semiconductor interface.

  12. Transverse Schottky spectra and beam transfer functions of coasting ion beams with space charge

    Energy Technology Data Exchange (ETDEWEB)

    Paret, Stefan

    2010-02-22

    A study of the transverse dynamics of coasting ion beams with moderate space charge is presented in this work. From the dispersion relation with linear space charge, an analytic model describing the impact of space charge on transverse beam transfer functions (BTFs) and the stability limits of a beam is derived. The dielectric function obtained in this way is employed to describe the transverse Schottky spectra with linear space charge as well. The difference between the action of space charge and impedances is highlighted. The setup and the results of an experiment performed in the heavy ion synchrotron SIS-18 at GSI to detect space-charge effects at different beam intensities are explicated. The measured transverse Schottky spectra and BTFs are compared with the linear space-charge model. The stability diagrams constructed from the BTFs are presented. The space-charge parameters evaluated from the Schottky and BTF measurements are compared with estimations based on measured beam parameters. The impact of collective effects on the Schottky and BTF diagnostics is also investigated through numerical simulations. For this purpose the self-field of beams with linear and non-linear transverse density-distributions is computed on a twodimensional grid. The noise of the random particle distribution causes fluctuations of the dipole moment of the beam which produce the Schottky spectrum. BTFs are simulated by exciting the beam with transverse kicks. The simulation results are used to verify the space-charge model. (orig.)

  13. Microwave Annealing for NiSiGe Schottky Junction on SiGe P-Channel

    Directory of Open Access Journals (Sweden)

    Yu-Hsien Lin

    2015-11-01

    Full Text Available In this paper, we demonstrated the shallow NiSiGe Schottky junction on the SiGe P-channel by using low-temperature microwave annealing. The NiSiGe/n-Si Schottky junction was formed for the Si-capped/SiGe multi-layer structure on an n-Si substrate (Si/Si0.57Ge0.43/Si through microwave annealing (MWA ranging from 200 to 470 °C for 150 s in N2 ambient. MWA has the advantage of being diffusion-less during activation, having a low-temperature process, have a lower junction leakage current, and having low sheet resistance (Rs and contact resistivity. In our study, a 20 nm NiSiGe Schottky junction was formed by TEM and XRD analysis at MWA 390 °C. The NiSiGe/n-Si Schottky junction exhibits the highest forward/reverse current (ION/IOFF ratio of ~3 × 105. The low temperature MWA is a very promising thermal process technology for NiSiGe Schottky junction manufacturing.

  14. Analysing black phosphorus transistors using an analytic Schottky barrier MOSFET model.

    Science.gov (United States)

    Penumatcha, Ashish V; Salazar, Ramon B; Appenzeller, Joerg

    2015-11-13

    Owing to the difficulties associated with substitutional doping of low-dimensional nanomaterials, most field-effect transistors built from carbon nanotubes, two-dimensional crystals and other low-dimensional channels are Schottky barrier MOSFETs (metal-oxide-semiconductor field-effect transistors). The transmission through a Schottky barrier-MOSFET is dominated by the gate-dependent transmission through the Schottky barriers at the metal-to-channel interfaces. This makes the use of conventional transistor models highly inappropriate and has lead researchers in the past frequently to extract incorrect intrinsic properties, for example, mobility, for many novel nanomaterials. Here we propose a simple modelling approach to quantitatively describe the transfer characteristics of Schottky barrier-MOSFETs from ultra-thin body materials accurately in the device off-state. In particular, after validating the model through the analysis of a set of ultra-thin silicon field-effect transistor data, we have successfully applied our approach to extract Schottky barrier heights for electrons and holes in black phosphorus devices for a large range of body thicknesses.

  15. On-Chip Power-Combining for High-Power Schottky Diode Based Frequency Multipliers

    Science.gov (United States)

    Siles Perez, Jose Vicente (Inventor); Chattopadhyay, Goutam (Inventor); Lee, Choonsup (Inventor); Schlecht, Erich T. (Inventor); Jung-Kubiak, Cecile D. (Inventor); Mehdi, Imran (Inventor)

    2015-01-01

    A novel MMIC on-chip power-combined frequency multiplier device and a method of fabricating the same, comprising two or more multiplying structures integrated on a single chip, wherein each of the integrated multiplying structures are electrically identical and each of the multiplying structures include one input antenna (E-probe) for receiving an input signal in the millimeter-wave, submillimeter-wave or terahertz frequency range inputted on the chip, a stripline based input matching network electrically connecting the input antennas to two or more Schottky diodes in a balanced configuration, two or more Schottky diodes that are used as nonlinear semiconductor devices to generate harmonics out of the input signal and produce the multiplied output signal, stripline based output matching networks for transmitting the output signal from the Schottky diodes to an output antenna, and an output antenna (E-probe) for transmitting the output signal off the chip into the output waveguide transmission line.

  16. First results from the LHC Schottky Monitor operated with Direct Diode Detection

    CERN Document Server

    Gasior, M

    2012-01-01

    The LHC is equipped with a Schottky diagnostic system based on 4.8 GHz resonant pick-ups. Their signals are processed according to a three-stage down-mixing scheme, working well in most beam conditions. An important exception is the period of energy ramp of proton beams, when the noise floor of the observed beam spectrum increases dramatically and the Schottky sidebands disappear. To study beam spectra in such conditions the signals from the Schottky pick-ups were split and the second half of their power was processed with a copy of the LHC tune measurement electronics, modified for this application. The experimental set-up is based on simple diode detectors followed by signal processing in the kHz range and 24-bit audio ADCs. With such a test system LHC beam spectra were successfully observed. This contribution presents the used hardware and obtained results.

  17. The controlled growth of graphene nanowalls on Si for Schottky photodetector

    Directory of Open Access Journals (Sweden)

    Quan Zhou

    2017-12-01

    Full Text Available Schottky diode with directly-grown graphene on silicon substrate has advantage of clean junction interface, promising for photodetectors with high-speed and low noise. In this report, we carefully studied the influence of growth parameters on the junction quality and photoresponse of graphene nanowalls (GNWs-based Schottky photodetectors. We found that shorter growth time is critical for lower dark current, but at the same time higher photocurrent. The influence of growth parameters was attributed to the defect density of various growth time, which results in different degrees of surface absorption for H2O/O2 molecules and P-type doping level. Raman characterization and vacuum annealing treatment were carried out to confirm the regulation mechanism. Meanwhile, the release of thermal stress also makes the ideality factor η of thinner sample better than the thicker. Our results are important for the response improvement of photodetectors with graphene-Si schottky junction.

  18. Schottky barrier measurements on individual GaAs nanowires by X-ray photoemission microscopy

    Energy Technology Data Exchange (ETDEWEB)

    Di Mario, Lorenzo [IMM-CNR, via del Fosso del Cavaliere 100, 00133 Rome (Italy); Turchini, Stefano, E-mail: stefano.turchini@cnr.it [ISM-CNR, via del Fosso del Cavaliere 100, 00133 Rome (Italy); Zamborlini, Giovanni; Feyer, Vitaly [Peter Grünberg Institute (PGI-6) and JARA-FIT, Research Center Jülich, 52425 Jülich (Germany); Tian, Lin [IMM-CNR, via del Fosso del Cavaliere 100, 00133 Rome (Italy); Schneider, Claus M. [Peter Grünberg Institute (PGI-6) and JARA-FIT, Research Center Jülich, 52425 Jülich (Germany); Fakultät für Physik and Center for Nanointegration Duisburg-Essen (CENIDE), Universität Duisburg-Essen, D-47048 Duisburg (Germany); Rubini, Silvia [IOM-CNR, TASC Laboratory, Basovizza 34149, Trieste (Italy); Martelli, Faustino, E-mail: faustino.martelli@cnr.it [IMM-CNR, via del Fosso del Cavaliere 100, 00133 Rome (Italy)

    2016-11-15

    Highlights: • The Schottky barrier at the interface between Cu and GaAs nanowires was measured. • Individual nanowires were investigated by X-ray Photoemission Microscopy. • The Schottky barrier at different positions along the nanowire was evaluated. - Abstract: We present measurements of the Schottky barrier height on individual GaAs nanowires by means of x-ray photoelectron emission microscopy (XPEEM). Values of 0.73 and 0.51 eV, averaged over the entire wires, were measured on Cu-covered n-doped and p-doped GaAs nanowires, respectively, in agreement with results obtained on bulk material. Our measurements show that XPEEM can become a feasible and reliable investigation tool of interface formation at the nanoscale and pave the way towards the study of size-dependent effects on semiconductor-based structures.

  19. Understanding Pt-ZnO:In Schottky nanocontacts by conductive atomic force microscopy

    Science.gov (United States)

    Chirakkara, Saraswathi; Choudhury, Palash Roy; Nanda, K. K.; Krupanidhi, S. B.

    2016-04-01

    Undoped and In doped ZnO (IZO) thin films are grown on Pt coated silicon substrates Pt/Si by pulsed laser deposition to fabricate Pt/ZnO:In Schottky diodes. The Schottky diodes were investigated by conventional two-probe current-voltage (I-V) measurements and by the I-V spectroscopy tool of conductive atomic force microscopy (C-AFM). The large deviation of the ideality factor from unity and the temperature dependent Schottky barrier heights (SBHs) obtained from the conventional method imply the presence of inhomogeneous interfaces. The inhomogeneity of SBHs is confirmed by C-AFM. Interestingly, the I-V curves at different points are found to be different, and the SBHs deduced from the point diodes reveal inhomogeneity at the nanoscale at the metal-semiconductor interface. A reduction in SBH and turn-on voltage along with enhancement in forward current are observed with increasing indium concentration.

  20. Improved Schottky contacts to InGaN alloys by a photoelectrochemical treatment

    Energy Technology Data Exchange (ETDEWEB)

    Tang, Yin; Cai, Qing; Chen, Dunjun; Lu, Hai; Zhang, Rong; Zheng, Youdou [Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing, 210093 (China); Yang, Lianhong [Department of Physics, Changji College, Changji, 831100 (China); Xue, Junjun [School of Electronic Science and Engineering, Nanjing University of Posts and Telecommunications, Nanjing, 210093 (China)

    2016-04-15

    We report on improved electrical properties of Schottky contacts to InGaN alloys by introducing a photoelectrochemical treatment. The Schottky barrier height determined by a thermionic-field emission model, a dominating forward-current-transport mechanism, increased by 0.15 eV from 1.02 eV for conventional contacts to 1.17 eV for those with photoelectrochemical treatment at room temperature, while the ideality factors is closer to 1 after photoelectrochemical treatment. Furthermore, the reverse leakage mechanism varies from an ohmic transport mechanism at relatively low voltage and space charge-limited current mechanism at relatively high voltage for conventional contacts to Frenkel-Poole emission for improved Schottky contacts, which is attributed to partly removing surface states by the photoelectrochemical treatment. (copyright 2015 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  1. Recent Progress in Ohmic/Schottky-Contacted ZnO Nanowire Sensors

    Directory of Open Access Journals (Sweden)

    Xiaoli Zhao

    2015-01-01

    Full Text Available We review the recent progress of zinc oxide (ZnO nanowire sensors with ohmic-contacted and Schottky-contacted configurations and the enhancement of the performances of Schottky-contacted ZnO NW sensors (SCZNSs by the piezotronic effect. Comparing with the traditional ohmic-contacted ZnO NW sensors (OCZNSs, the SCZNSs have higher sensitivities and faster responses controlled by the barrier height at the metal-semiconductor (M-S interface. The piezotronic effect was applied to tune the Schottky barrier height (SBH with the strain-induced piezoelectric polarization charges at the interface of the M-S contact. The piezotronic effect can thus improve the detection limitation, sensitivity, and response time of the SCZNSs in different applications, such as UV detection, gas and bio/chemical sensing. These piezotronic-enhanced SCZNSs may find potential applications in human-machine interfacing and flexible electronics skin technologies.

  2. A low-cost fabrication method for sub-millimeter wave GaAs Schottky diode

    Science.gov (United States)

    Jenabi, Sarvenaz; Deslandes, Dominic; Boone, Francois; Charlebois, Serge A.

    2017-10-01

    In this paper, a submillimeter-wave Schottky diode is designed and simulated. Effect of Schottky layer thickness on cut-off frequency is studied. A novel microfabrication process is proposed and implemented. The presented microfabrication process avoids electron-beam (e-beam) lithography which reduces the cost. Also, this process provides more flexibility in selection of design parameters and allows significant reduction in the device parasitic capacitance. A key feature of the process is that the Schottky contact, the air-bridges, and the transmission lines, are fabricated in a single lift-off step. This process relies on a planarization method that is suitable for trenches of 1-10 μm deep and is tolerant to end-point variations. The fabricated diode is measured and results are compared with simulations. A very good agreement between simulation and measurement results are observed.

  3. Mis on meie huvid Euroopa Liidus? / Villu Känd

    Index Scriptorium Estoniae

    Känd, Villu

    2007-01-01

    Ilmunud ka: Meie Maa, 4. juuli 2007, lk. 2; Lääne Elu, 5. juuli 2007, lk. 2; Nädaline, 5. juuli 2007, lk. 5; Põhjarannik, 7. juuli 2007, lk. 2; Hiiu Leht, 10. juuli 2007, lk. 2; Severnoje Poberezhje, 10. juuli 2007, lk. 2; Valgamaalane, 12. juuli 2007, lk. 2; Virumaa Teataja, 18. juuli 2007, lk. 11; Oma saar, 18. juuli 2007, lk. 5; Sakala, 19. juuli 2007, lk. 2. Valminud on versioon olulisest poliitikadokumendist, mis võtab kokku Eesti eesmärgid Euroopa Liidus järgnevatel aastatel

  4. Light-induced changes in the solar cell parameters and temperature coefficient of n-C/p-Si heterojunction solar cell

    Energy Technology Data Exchange (ETDEWEB)

    Gupta, Babita; Kapoor, A.; Mehra, R.M. [Department of Electronic Science, University of Delhi South Campus, Benito Juarez Road, New Delhi-110021 (India); Soga, Tetsuo; Jimbo, Takashi [Department of Environmental Technology and Urban Planning, Nagoya Institute of Technology, Nagoya-466-8555 (Japan); Umeno, Masayoshi [Department of Electronic Engineering,Chubu University, Matsumoto 1200, Kasugai-shi, 487-8501 (Japan)

    2003-09-15

    Amorphous carbon (a-C) is a potential material for the development of low-cost and high-efficiency solar cell. We report the study of the influence of light soaking up to 100h on n-C/p-Si heterojunction solar cell. It is observed that the deterioration in the fill factor and the efficiency are significantly smaller as compared to that observed in a-Si:H solar cell. Variations in the temperature coefficients of the I-V characteristics subjected to light degradation and recovery has also been investigated. A good correlation between change in the temperature coefficient and the degradation/recovery state of cell's conversion efficiency has been observed.

  5. Photoresponse and photocapacitor properties of Au/AZO/p-Si/Al diode with AZO film prepared by pulsed laser deposition (PLD) method

    Science.gov (United States)

    Alyamani, A.; Tataroğlu, A.; El Mir, L.; Al-Ghamdi, Ahmed A.; Dahman, H.; Farooq, W. A.; Yakuphanoğlu, F.

    2016-04-01

    The electrical and photoresponse properties of Au/nanostructure AZO/p-Si/Al diode were investigated. Al-doped ZnO (AZO) thin films were deposited via pulsed laser deposition method on silicon substrate. Structural properties of the films were performed by using transmission electron microscopy and X-ray powder diffraction (XRD). The XRD patterns showed that the AZO films are polycrystalline with hexagonal wurtzite structure preferentially oriented in (002) direction. Electrical and photoresponse properties of the diode were analyzed under in a wide range of frequencies and illumination intensities. It is observed that the reverse current of the diode increases with increasing illumination intensity. This result confirms that the diode exhibits both photoconducting and photovoltaic behavior. Also, the transient photocurrent, photocapacitance and photoconductance measured as a function of time highly depend on transient illumination. In addition, the frequency dependence of capacitance and conductance is attributed to the presence of interface states.

  6. Characterization of Ni-P-SiO{sub 2}-Al{sub 2}O{sub 3} nanocomposite coatings on aluminum substrate

    Energy Technology Data Exchange (ETDEWEB)

    Rahemi Ardakani, S., E-mail: saeed.rahemi69@gmail.com [Department of Materials Science and Engineering, Sharif University of Technology, Tehran (Iran, Islamic Republic of); Afshar, A. [Department of Materials Science and Engineering, Sharif University of Technology, Tehran (Iran, Islamic Republic of); Sadreddini, S., E-mail: sina.sadreddini1986@gmail.com [Young Researchers and Elites Club, Science and Research Branch, Islamic Azad University, Tehran (Iran, Islamic Republic of); Ghanbari, A.A. [Department of Materials Science and Engineering, Sharif University of Technology, International Campus, Kish Island (Iran, Islamic Republic of)

    2017-03-01

    In the present work, nano-composites of Ni-P-SiO{sub 2}-Al{sub 2}O{sub 3} were coated on a 6061 aluminum substrate. The surface morphology of the nano-composite coating was studied by field emission scanning electron microscopy (FESEM). The amount of SiO{sub 2} in the coating was determined by Energy Dispersive Analysis of X-Ray (EDX) and the crystalline structure of the coating was examined by X-ray diffractometer (XRD). All the experiments concerning the corrosion behavior of the coating carried out in 3.5%wt NaCl solution and evaluated by electrochemical impedance spectroscopy (EIS) and polarization technique. The results showed that an incorporation of SiO{sub 2} and Al{sub 2}O{sub 3} in Ni-P coating at the SiO{sub 2} concentration of 10 g/L and 14 g/L Al{sub 2}O{sub 3} led to the lowest corrosion rate (i{sub corr} = 0.88 μA/cm{sup 2}), the most positive E{sub corr} and maximum microhardness (537 μHV). Furthermore, increasing the amount of nanoparticles in the coating was found to decrease CPE{sub dl} and improve porosity. - Highlights: • The maximum content of Al{sub 2}O{sub 3} and SiO{sub 2} in the coating was increased to 14.02%wt and 4.54%wt, respectively. • By enhancing the amount of nanoparticles in the coating, there was higher corrosion resistance. • Increasing the nanoparticles content in the coating improved microhardness of coating. • The maximum of microhardness of Ni-P-SiO{sub 2}-Al{sub 2}O{sub 3} was measured to be 537 μHV.

  7. LARP LHC 4.8 GHz Schottky System Initial Commissioning with Beam

    CERN Document Server

    Pasquinelli, R J; Jones, O R; Jansson, A

    2011-01-01

    The LHC Schottky system consists for four independent 4.8 GHz triple down conversion receivers with associated data acquisition systems. Each system is capable of measuring tune, chromaticity, momentum spread in either horizontal or vertical planes; two systems per beam. The hardware commissioning has taken place during the spring and summer of 2010. With nominal bunch beam currents of 1011 protons, the first incoherent Schottky signals were detected and analyzed. This paper will report on these initial commissioning results. A companion paper will report on the data analysis curve fitting and remote control user interface of the system.

  8. LARP LHC 4.8 GHZ Schottky System Initial Commissioning with Beam

    CERN Document Server

    Pasquinelli, Ralph J.; Jones, O.Rhodri; Caspers, Fritz

    2011-01-01

    The LHC Schottky system consists for four independent 4.8 GHz triple down conversion receivers with associated data acquisition systems. Each system is capable of measuring tune, chromaticity, momentum spread in either horizontal or vertical planes; two systems per beam. The hardware commissioning has taken place from spring through fall of 2010. With nominal bunch beam currents of 1011 protons, the first incoherent Schottky signals were detected and analyzed. This paper will report on these initial commissioning results. A companion paper will report on the data analysis curve fitting and remote control user interface of the system.

  9. Metal contacts in nanocrystalline n-type GaN: Schottky diodes.

    Science.gov (United States)

    Das, S N; Sarangi, S; Sahu, S N; Pal, A K

    2009-04-01

    Contact properties in nanocrystalline n-GaN in thin film form were studied by depositing nanocrystalline films onto aluminium coated fused silica substrates by high pressure sputtering of Si (1 at%) doped GaN target. Schottky diodes were realized with Au, Ni and Pd as top contacts on the nanocrystalline n-GaN films to examine the contact properties of the diodes thus formed. Variation of current-voltage (I-V) and capacitance-voltage (C-V) characteristics of the Schottky diodes were recorded at different temperatures and analyzed in the light of the existing theories.

  10. An improved forward I-V method for nonideal Schottky diodes with high series resistance

    OpenAIRE

    Lien, C.-D.; So, F. C. T.; Nicolet, M. -A.

    1984-01-01

    Two methods are described to obtain the value of the series resistance(R)of a Schottky diode from its forward I-V characteristic. The value of R is then used to plot the curve ln(I) versus V_D (= V - IR)which becomes a straight line even if ln(I) versus V does not. The ideality factor n and the Schottky-barrier height Φ_(B0) of the diode then follow from the standard procedure. The main advantages of the methods are: 1) a linear regression can be used to calculate the value of R, 2) many dat...

  11. Optimized design of 4H-SiC floating junction power Schottky barrier diodes

    Science.gov (United States)

    Hongbin, Pu; Lin, Cao; Zhiming, Chen; Jie, Ren

    2009-04-01

    SiC floating junction Schottky barrier diodes were simulated with software MEDICI 4.0 and their device structures were optimized based on forward and reverse electrical characteristics. Compared with the conventional power Schottky barrier diode, the device structure is featured by a highly doped drift region and embedded floating junction region, which can ensure high breakdown voltage while keeping lower specific on-state resistance, solved the contradiction between forward voltage drop and breakdown voltage. The simulation results show that with optimized structure parameter, the breakdown voltage can reach 4 kV and the specific on-resistance is 8.3 mΩ·cm2.

  12. Monolayer borophene electrode for effective elimination of both the Schottky barrier and strong electric field effect

    Science.gov (United States)

    Liu, L. Z.; Xiong, S. J.; Wu, X. L.

    2016-08-01

    The formation of Schottky barriers between 2D semiconductors and traditional metallic electrodes has greatly limited the application of 2D semiconductors in nanoelectronic and optoelectronic devices. In this study, metallic borophene was used as a substitute for the traditional noble metal electrode to contact with the 2D semiconductor. Theoretical calculations demonstrated that no Schottky barrier exists in the borophene/2D semiconductor heterostructure. The contact remains ohmic even with a strong electric field applied. This finding provides a way to construct 2D electronic devices and sensors with greatly enhanced performance.

  13. Monolayer borophene electrode for effective elimination of both the Schottky barrier and strong electric field effect

    Energy Technology Data Exchange (ETDEWEB)

    Liu, L. Z., E-mail: lzliu@nju.edu.cn, E-mail: hkxlwu@nju.edu.cn; Xiong, S. J.; Wu, X. L., E-mail: lzliu@nju.edu.cn, E-mail: hkxlwu@nju.edu.cn [Key Laboratory of Modern Acoustics, MOE, Institute of Acoustics and Collaborative Innovation Center of Advanced Microstructures, National Laboratory of Solid State Microstructures, Nanjing University, Nanjing 210093 (China)

    2016-08-08

    The formation of Schottky barriers between 2D semiconductors and traditional metallic electrodes has greatly limited the application of 2D semiconductors in nanoelectronic and optoelectronic devices. In this study, metallic borophene was used as a substitute for the traditional noble metal electrode to contact with the 2D semiconductor. Theoretical calculations demonstrated that no Schottky barrier exists in the borophene/2D semiconductor heterostructure. The contact remains ohmic even with a strong electric field applied. This finding provides a way to construct 2D electronic devices and sensors with greatly enhanced performance.

  14. Schottky contact barrier height enhancement on p-type silicon by wet chemical etching

    Science.gov (United States)

    Adegboyega, G. A.; Poggi, A.; Susi, E.; Castaldini, A.; Cavallini, A.

    1989-04-01

    A wet chemical etch preceding the usual cleaning process has been found to yield Schottky barriers of high values on p-type silicon. This procedure produces a passivated surface layer which has resulted in Al/0-Si Schottky diodes with barrier height of 0.75 eV and ideality factor of 1.15. Measurements have confirmed the presence of electrically active donor-like states in this surface layer. The origin of the donor states is explained in terms of the deactivation of the boron acceptor by the formation of H + B - pairs.

  15. An Ultra-Wideband Schottky Diode Based Envelope Detector for 2.5 Gbps signals

    DEFF Research Database (Denmark)

    Cimoli, Bruno; Valdecasa, Guillermo Silva; Granja, Angel Blanco

    2016-01-01

    In this paper an ultra-wideband (UWB) Schottky diode based envelope detector is reported. The detector consists of an input matching network, a Schottky diode and wideband output filtering network. The output network is tailored to demodulate ultra-wideband amplitude shift keying (ASK) signals up...... to 2.5 Gbps at 6-9 GHz carrier frequency. The detector uses microstrip and surface-mount device (SMD) components and it is fabricated on a Rogers 6002 substrate. Experimental results show error free transmissions up to 2.5 Gbps at an input power level of -11 dBm. The highest measured conversion gain...

  16. Cueva Antón: A multi-proxy MIS 3 to MIS 5a paleoenvironmental record for SE Iberia

    Science.gov (United States)

    Zilhão, João; Ajas, Aurélie; Badal, Ernestina; Burow, Christoph; Kehl, Martin; López-Sáez, José Antonio; Pimenta, Carlos; Preece, Richard C.; Sanchis, Alfred; Sanz, Montserrat; Weniger, Gerd-Christian; White, Dustin; Wood, Rachel; Angelucci, Diego E.; Villaverde, Valentín; Zapata, Josefina

    2016-08-01

    Overlying a palustrine deposit of unknown age (complex FP), and protected from weathering and erosion inside a large cave/rock-shelter cavity, the sedimentary fill of Cueva Antón, a Middle Paleolithic site in SE Spain, corresponds in most part (sub-complexes AS2-to-AS5) to a ca.3 m-thick Upper Pleistocene terrace of the River Mula. Coupled with the constraints derived from the deposit's paleoclimatic proxies, OSL dating places the accumulation of this terrace in MIS 5a, and radiocarbon dates from the overlying breccia cum alluvium (sub-complex AS1) fall in the middle part of MIS 3; the intervening hiatus relates to valley incision and attendant erosion. The two intervals represented remain largely unknown in Iberia, where the archeology of the early-to-middle Upper Pleistocene is almost entirely derived from karst sites; Cueva Antón shows that this dearth of data, often interpreted in demographic terms, has depositional underpinnings ultimately determined by past climate variation. In early MIS 5a, the paleobotanical evidence indicates climate conditions similar to present, albeit wetter, followed by progressive cooling, reflected in the replacement of Aleppo pine by black pine and, at the very end, juniper-dominated landscapes - the latter characterizing also mid-MIS 3 times. The variation in sedimentary facies and composition of the mollusk assemblages reflects the changing position of the river channel relative to the back wall of the cave. Such changes represented the major constraint for the occupation of the site - most of the time inaccessible to terrestrial mammals, it was used throughout by the eagle-owl, explaining the abundance of rabbit bones. Human occupation occurred during a few, short windows of availability, and is reflected in well-preserved living floors defined by hearths, artefact scatters, and the remains of hunted herbivores. The stone tool assemblages are Middle Paleolithic, which, in Europe, implies a Neandertal identity for their makers

  17. Luminance compensation for AMOLED displays using integrated MIS sensors

    Science.gov (United States)

    Vygranenko, Yuri; Fernandes, Miguel; Louro, Paula; Vieira, Manuela

    2017-05-01

    Active-matrix organic light-emitting diodes (AMOLEDs) are ideal for future TV applications due to their ability to faithfully reproduce real images. However, pixel luminance can be affected by instability of driver TFTs and aging effect in OLEDs. This paper reports on a pixel driver utilizing a metal-insulator-semiconductor (MIS) sensor for luminance control of the OLED element. In the proposed pixel architecture for bottom-emission AMOLEDs, the embedded MIS sensor shares the same layer stack with back-channel etched a Si:H TFTs to maintain the fabrication simplicity. The pixel design for a large-area HD display is presented. The external electronics performs image processing to modify incoming video using correction parameters for each pixel in the backplane, and also sensor data processing to update the correction parameters. The luminance adjusting algorithm is based on realistic models for pixel circuit elements to predict the relation between the programming voltage and OLED luminance. SPICE modeling of the sensing part of the backplane is performed to demonstrate its feasibility. Details on the pixel circuit functionality including the sensing and programming operations are also discussed.

  18. Photic zone changes in the north-west Pacific Ocean from MIS 4–5e

    Directory of Open Access Journals (Sweden)

    G. E. A. Swann

    2015-01-01

    Full Text Available In comparison to other sectors of the marine system, the palaeoceanography of the subarctic North Pacific Ocean is poorly constrained. New diatom isotope records of δ13C, δ18O, δ30Si (δ13Cdiatom, δ18Odiatom, and δ30Sidiatom are presented alongside existing geochemical and isotope records to document changes in photic zone conditions, including nutrient supply and the efficiency of the soft-tissue biological pump, between Marine Isotope Stage (MIS 4 and MIS 5e. Peaks in opal productivity in MIS 5b/c and MIS 5e are both associated with the breakdown of the regional halocline stratification and increased nutrient supply to the photic zone. Whereas the MIS 5e peak is associated with low rates of nutrient utilisation, the MIS 5b/c peak is associated with significantly higher rates of nutrient utilisation. Both peaks, together with other smaller increases in productivity in MIS 4 and 5a, culminate with a significant increase in freshwater input which strengthens/re-establishes the halocline and limits further upwelling of sub-surface waters to the photic zone. Whilst δ30Sidiatom and previously published records of diatom δ15N (δ15Ndiatom (Brunelle et al., 2007, 2010 show similar trends until the latter half of MIS 5a, the records become anti-correlated after this juncture and into MIS 4, suggesting a possible change in photic zone state such as may occur with a shift to iron or silicon limitation.

  19. Synthesis and Characterization of Aluminum-Phosphorus Adducts: X-Ray Crystal Structures of Cl3Al(dot)P(SiMe3)3(dot)C7H8 and Br3Al(dot)P(SiMe3)3(dot) C7H8

    Science.gov (United States)

    1994-05-05

    AslI ), R2(X)M.E(SiMe 3 )3 (R = i-Bu, X = Cl, M = Al, E = As;12 R = Ph, X =Cl, M = Ga, E = P’o), and X3M.E(SiMe3) 3 (X = Cl, M = Al, E = As;13 X = I, M...furnishing a clear, yellow- orange solution. P(SiMe3) 3 (0.252 g, 1.006 mmol) in toluene (30 cm 3) was added, resulting in a clear, colourless liquid

  20. Simulation of electrical characteristics of GaN vertical Schottky diodes

    Science.gov (United States)

    Łukasiak, Lidia; Jasiński, Jakub; Jakubowski, Andrzej

    2016-12-01

    Reverse current of GaN vertical Schottky diodes is simulated using Silvaco ATLAS to optimize the geometry for the best performance. Several physical quantities and phenomena, such as carrier mobility and tunneling mechanism are studied to select the most realistic models. Breakdown voltage is qualitatively estimated based on the maximum electric field in the structure.

  1. CMOS Application of Schottky Source/Drain SOI MOSFET with Shallow Doped Extension

    Science.gov (United States)

    Matsumoto, Sumie; Nishisaka, Mika; Asano, Tanemasa

    2004-04-01

    The silicon-on-insulator metal-oxide-semiconductor field-effect transistor (SOI MOSFET) whose source/drain is composed of Schottky contacts and a shallow-doped extension is investigated. It is demonstrated that the incorporation of the shallow-doped extension into the Schottky source/drain can increase the current drive and reduce the leakage current under reverse bias for both n-channel and p-channel devices. The shallow doping is performed by implanting Sb for n-channel devices, and BF2 or Ga for p-channel devices. The effect of Schottky contacts on the floating body effect (FBE) is investigated by analyzing the lateral bipolar characteristics of these devices. By employing the shallow-doped extension, a complementary MOS (CMOS) of the Schottky source/drain can be fabricated using single metal (cobalt, in this work) silicide. The stability of CMOS operation with the proposed devices under a high supply voltage is demonstrated by comparing it with a conventional pn-junction SOI MOSFET. It is also demonstrated from the characteristics of the CMOS-inverter ring oscillator that the proposed device operates at speeds as high as or even higher than that of the conventional SOI MOSFET.

  2. 5.2% efficient PbS nanocrystal Schottky solar cells

    NARCIS (Netherlands)

    Piliego, Claudia; Protesescu, Loredana; Bisri, Satria Zulkarnaen; Kovalenko, Maksym V.; Loi, Maria Antonietta

    2013-01-01

    The impact of post-synthetic treatments of nanocrystals (NCs) on the performance of Schottky solar cells, where the active PbS nanocrystal layer is sandwiched directly between two electrodes, is investigated. By monitoring the amount of ligands on the surface of the nanocrystals through Fourier

  3. Thermally Stable Silver Nanowires-Embedding Metal Oxide for Schottky Junction Solar Cells.

    Science.gov (United States)

    Kim, Hong-Sik; Patel, Malkeshkumar; Park, Hyeong-Ho; Ray, Abhijit; Jeong, Chaehwan; Kim, Joondong

    2016-04-06

    Thermally stable silver nanowires (AgNWs)-embedding metal oxide was applied for Schottky junction solar cells without an intentional doping process in Si. A large scale (100 mm(2)) Schottky solar cell showed a power conversion efficiency of 6.1% under standard illumination, and 8.3% under diffused illumination conditions which is the highest efficiency for AgNWs-involved Schottky junction Si solar cells. Indium-tin-oxide (ITO)-capped AgNWs showed excellent thermal stability with no deformation at 500 °C. The top ITO layer grew in a cylindrical shape along the AgNWs, forming a teardrop shape. The design of ITO/AgNWs/ITO layers is optically beneficial because the AgNWs generate plasmonic photons, due to the AgNWs. Electrical investigations were performed by Mott-Schottky and impedance spectroscopy to reveal the formation of a single space charge region at the interface between Si and AgNWs-embedding ITO layer. We propose a route to design the thermally stable AgNWs for photoelectric device applications with investigation of the optical and electrical aspects.

  4. Schottky barrier height of MnSb/GaAs(111)B contacts : Influence of interface structure

    NARCIS (Netherlands)

    Manago, T; Miyanishi, S; Akinaga, H; Van Roy, W; Roelfsema, RFB; Sato, T; Tamura, E; Yuasa, S

    2000-01-01

    The Schottky barrier height (SBH) of MnSb(0001)/n-GaAs(111)B diodes was investigated in terms of current-voltage characteristics for three different GaAs surfaces, GaAs (root 19x root 19), GaAs (2x2), and sulfur passivated GaAs. We observed that the SBH and the ideality factor changed significantly

  5. A high-speed Schottky detector for ultra-wideband communications

    DEFF Research Database (Denmark)

    Valdecasa, Guillermo Silva; Cimoli, Bruno; Blanco Granja, Ángel

    2017-01-01

    This letter reviews the design procedure of a high‐speed Schottky video detector for high‐data‐rate communications within the ultra‐wideband (UWB) frequencies. The classic design approach for video detectors is extended with a mixer‐like analysis, which results in a more detailed assessment...

  6. Electron Waveguide Y-branch Switches Controlled by Pt/GaAs Schottky Gates

    Science.gov (United States)

    Forsberg, E.; Hieke, K.

    Electron waveguide Y-branch switches have been fabricated in a GaAs/AlGaAs heterostructure. These are controlled by Pt/GaAs Schottky contacts, which were realized by an in-situ electrochemical process. In this paper we describe the fabrication process as well as present results from conductance measurements in the fabricated devices.

  7. Utilizing Schottky barriers to suppress short-channel effects in organic transistors

    Science.gov (United States)

    Fernández, Anton F.; Zojer, Karin

    2017-10-01

    Transistors with short channel lengths exhibit profound deviations from the ideally expected behavior. One of the undesired short-channel effects is an enlarged OFF current that is associated with a premature turn on of the transistor. We present an efficient approach to suppress the OFF current, defined as the current at zero gate source bias, in short-channel organic transistors. We employ two-dimensional device simulations based on the drift-diffusion model to demonstrate that intentionally incorporating a Schottky barrier for injection enhances the ON-OFF ratio in both staggered and coplanar transistor architectures. The Schottky barrier is identified to directly counteract the origin of enlarged OFF currents: Short channels promote a drain-induced barrier lowering. The latter permits unhindered injection of charges even at reverse gate-source bias. An additional Schottky barrier hampers injection for such points of operations. We explain how it is possible to find the Schottky barrier of the smallest height necessary to exactly compensate for the premature turn on. This approach offers a substantial enhancement of the ON-OFF ratio. We show that this roots in the fact that such optimal barrier heights offer an excellent compromise between an OFF current diminished by orders of magnitude and an only slightly reduced ON current.

  8. Tuning the Schottky Barrier at the Graphene/MoS2 Interface by Electron Doping

    DEFF Research Database (Denmark)

    Jin, Chengjun; Rasmussen, Filip Anselm; Thygesen, Kristian Sommer

    2015-01-01

    Using ab initio calculations we investigate the energy level alignment at the graphene/MoS2 heterostructure and the use of electron doping as a strategy to lower the Schottky barrier and achieve a low-resistance Ohmic contact. For the neutral heterostructure, density functional theory (DFT...... concentration is shown to be mainly governed by the electrostatic potential resulting from the doping charge....

  9. Atomic composition of WC/ and Zr/O-terminated diamond Schottky interfaces close to ideality

    Energy Technology Data Exchange (ETDEWEB)

    Piñero, J.C., E-mail: josecarlos.pinero@uca.es [Dpto. Ciencias de los Materiales, Universidad de Cádiz, Puerto Real, Cádiz,11510 (Spain); Araújo, D. [Dpto. Ciencias de los Materiales, Universidad de Cádiz, Puerto Real, Cádiz,11510 (Spain); Fiori, A. [National Institute for Materials Science, Tsukuba, Ibaraki (Japan); Traoré, A. [Institut Néel, CNRS-UJF, av. des Martyrs, Grenoble,38042 France (France); Villar, M.P. [Dpto. Ciencias de los Materiales, Universidad de Cádiz, Puerto Real, Cádiz,11510 (Spain); Eon, D.; Muret, P.; Pernot, J. [Institut Néel, CNRS-UJF, av. des Martyrs, Grenoble,38042 France (France); Teraji, T. [National Institute for Materials Science, Tsukuba, Ibaraki (Japan)

    2017-02-15

    Highlights: • Metal/O-terminated diamond interfaces are analyzed by a variety of TEM techniques. • Thermal treatment is shown to modify structural and chemical interface properties. • Electrical behavior vs annealing is shown to be related with interface modification. • Interfaces are characterized with atomic resolution to probe inhomogeneities. • Oxide formation and modification is demonstrated in both Schottky diodes. - Abstract: Electrical and nano-structural properties of Zr and WC-based Schottky power diodes are compared and used for investigating oxide-related effects at the diamond/metal interface. Differences in Schottky barrier heights and ideality factors of both structures are shown to be related with the modification of the oxygen-terminated diamond/metal interface configuration. Oxide formation, oxide thickness variations and interfacial oxygen redistribution, associated with thermal treatment are demonstrated. Ideality factors close to ideality (n{sub WC} = 1.02 and n{sub Zr} = 1.16) are obtained after thermal treatment and are shown to be related with the relative oxygen content at the surface (OCR{sub WC} = 3.03 and OCR{sub Zr} = 1.5). Indeed, thermal treatment at higher temperatures is shown to promote an escape of oxygen for the case of the WC diode, while it generates a sharper accumulation of oxygen at the metal/diamond interface for the case of Zr diode. Therefore, the metal-oxygen affinity is shown to be a key parameter to improve diamond-based Schottky diodes.

  10. The Effect of Bilayer Graphene Nanoribbon Geometry on Schottky-Barrier Diode Performance

    Directory of Open Access Journals (Sweden)

    Meisam Rahmani

    2013-01-01

    Full Text Available Bilayer graphene nanoribbon is a promising material with outstanding physical and electrical properties that offers a wide range of opportunities for advanced applications in future nanoelectronics. In this study, the application of bilayer graphene nanoribbon in schottky-barrier diode is explored due to its different stacking arrangements. In other words, bilayer graphene nanoribbon schottky-barrier diode is proposed as a result of contact between a semiconductor (AB stacking and metal (AA stacking layers. To this end, an analytical model joint with numerical solution of carrier concentration for bilayer graphene nanoribbon in the degenerate and nondegenerate regimes is presented. Moreover, to determine the proposed diode performance, the carrier concentration model is adopted to derive the current-voltage characteristic of the device. The simulated results indicate a strong bilayer graphene nanoribbon geometry and temperature dependence of current-voltage characteristic showing that the forward current of the diode rises by increasing of width. In addition, the lower value of turn-on voltage appears as the more temperature increases. Finally, comparative study indicates that the proposed diode has a better performance compared to the silicon schottky diode, graphene nanoribbon homo-junction contact, and graphene-silicon schottky diode in terms of electrical parameters such as turn-on voltage and forward current.

  11. Summer Student Report 2014: Schottky component qualification and RF filter characterization

    CERN Document Server

    Egidos Plaja, Nuria

    2014-01-01

    This Summer Student project has been developed in BE-BI-QP department under the supervision of Manfred Wendt. Main goals of the task to be performed are the following: 1)\tFilter characterization: the student will get familiar with the Vector Network Analizer (VNA), S-parameter measurement and PSPICE modelling of low-pass filters. 2)\tFilter response matching: an algorithm to compare and classify filter responses into best-matching pairs will be developed. 3)\tSchottky monitor filter qualification: S-parameter and time domain measurements will be carried out with filters related to Schottky monitor and results will be benchmarked. 4)\tSchottky monitor amplifier measurement: noise figure and gain at a given frequency will be measured for a set of Low Noise Amplifiers related to Schottky monitor. -1dB compression point and 3rd order interception point will be measured too for education purposes. For the development of this project, the student will get familiar with RF measure devices (VNA, VSA), theoretical concep...

  12. Effect of mechanical stress on current-voltage characteristics of thin film polycrystalline diamond Schottky diodes

    Energy Technology Data Exchange (ETDEWEB)

    Zhao, G.; Charlson, E.M.; Charlson, E.J.; Stacy, T.; Meese, J.M. (Department of Electrical and Computer Engineering, University of Missouri, Columbia, Missouri 65211 (United States)); Popovici, G.; Prelas, M. (Department of Nuclear Engineering, University of Missouri, Columbia, Missouri 65211 (United States))

    1993-02-15

    Schottky diodes utilized for mechanical stress effect studies were fabricated using aluminum contacts to polycrystalline diamond thin films grown by a hot-filament-assisted chemical vapor deposition process. Compressive stress was found to have a large effect on the forward biased current-voltage characteristics of the diode, whereas the effect on the reverse biased characteristics was relatively small. This stress effect on the forward biased diamond Schottky diode was attributed to piezojunction and piezoresistance effects that dominated the diode current-voltage characteristics in the small and large bias regions, respectively. At a large constant forward bias current, a good linear relationship between output voltage and applied force was observed for force of less than 10 N, as predicted by the piezoresistance effect. The measured force sensitivity of the diode was as high as 0.75 V/N at 1 mA forward bias. Compared to either silicon or germanium junction diodes and tunnel diodes, polycrystalline diamond Schottky diodes not only are very stress sensitive but also have good linearity. This study shows polycrystalline diamond Schottky diodes have potential as mechanical sensors.

  13. Quasi-Schottky-Barrier UTBB SOI MOSFET for Low-Power Robust SRAMs

    DEFF Research Database (Denmark)

    Ghanatian, Hamdam; Hosseini, Seyed Ebrahim; Zeinali, Behzad

    2017-01-01

    This paper presents a low-power robust static random access memory (SRAM) using a novel quasi-Schottky-barrier ultrathin body and ultrathin buried oxide (UTBB) silicon-on-insulator (SOI) device. In the proposed device, the drain terminal is highly doped and a metallic source terminal is used. Giv...

  14. Summary of Schottky barrier height data on epitaxially grown n-and p-GaAs

    CSIR Research Space (South Africa)

    Myburg, G

    1998-07-18

    Full Text Available The Schottky barrier height values, as determined by the current–voltage and capacitance–voltage techniques, of 43 metals which were fabricated by following the same cleaning procedure and using the same high-quality organ metallic vapour phase...

  15. Thin-film GaN Schottky diodes formed by epitaxial lift-off

    Science.gov (United States)

    Wang, Jingshan; Youtsey, Chris; McCarthy, Robert; Reddy, Rekha; Allen, Noah; Guido, Louis; Xie, Jinqiao; Beam, Edward; Fay, Patrick

    2017-04-01

    The performance of thin-film GaN Schottky diodes fabricated using a large-area epitaxial lift-off (ELO) process is reported in this work. Comparison of the device characteristics before and after lift-off processing reveals that the Schottky barrier height remains unchanged by the liftoff processing and is consistent with expectations based on metal-semiconductor work function differences, with a barrier height of approximately 1 eV obtained for Ni/Au contacts on n- GaN. However, the leakage current in both reverse and low-forward-bias regimes is found to improve significantly after ELO processing. Likewise, the ideality factor of the Schottky diodes also improves after ELO processing, decreasing from n = 1.12-1.18 before ELO to n = 1.04-1.10 after ELO. A possible explanation for the performance improvement obtained for Schottky diodes after substrate removal by ELO processing is the elimination of leakage paths consisting of vertical leakage along threading dislocations coupled with lateral conduction through the underlying n+ buffer layer that is removed in the ELO process. Epitaxial liftoff with GaN may enable significant improvement in device performance and economics for GaN-based electronics and optoelectronics.

  16. Multiple Schottky Barrier-Limited Field-Effect Transistors on a Single Silicon Nanowire with an Intrinsic Doping Gradient.

    Science.gov (United States)

    Barreda, Jorge L; Keiper, Timothy D; Zhang, Mei; Xiong, Peng

    2017-04-05

    In comparison to conventional (channel-limited) field-effect transistors (FETs), Schottky barrier-limited FETs possess some unique characteristics which make them attractive candidates for some electronic and sensing applications. Consequently, modulation of the nano Schottky barrier at a metal-semiconductor interface promises higher performance for chemical and biomolecular sensor applications when compared to conventional FETs with ohmic contacts. However, the fabrication and optimization of devices with a combination of ideal ohmic and Schottky contacts as the source and drain, respectively, present many challenges. We address this issue by utilizing Si nanowires (NWs) synthesized by a chemical vapor deposition process which yields a pronounced doping gradient along the length of the NWs. Devices with a series of metal contacts on a single Si NW are fabricated in a single lithography and metallization process. The graded doping profile of the NW is manifested in monotonic increases in the channel and junction resistances and variation of the nature of the contacts from ohmic to Schottky of increasing effective barrier height along the NW. Hence multiple single Schottky junction-limited FETs with extreme asymmetry and high reproducibility are obtained on an individual NW. A definitive correlation between increasing Schottky barrier height and enhanced gate modulation is revealed. Having access to systematically varying Schottky barrier contacts on the same NW device provides an ideal platform for identifying optimal device characteristics for sensing and electronic applications.

  17. Experimental and computational investigation of graphene/SAMs/n-Si Schottky diodes

    Science.gov (United States)

    Aydin, H.; Bacaksiz, C.; Yagmurcukardes, N.; Karakaya, C.; Mermer, O.; Can, M.; Senger, R. T.; Sahin, H.; Selamet, Y.

    2018-01-01

    We have investigated the effect of two different self-assembled monolayers (SAMs) on electrical characteristics of bilayer graphene (BLG)/n-Si Schottky diodes. Novel 4″bis(diphenylamino)-1, 1‧:3″-terphenyl-5‧ carboxylic acids (TPA) and 4,4-di-9H-carbazol-9-yl-1,1‧:3‧1‧-terphenyl-5‧ carboxylic acid (CAR) aromatic SAMs have been used to modify n-Si surfaces. Cyclic voltammetry (CV) and Kelvin probe force microscopy (KPFM) results have been evaluated to verify the modification of n-Si surface. The current-voltage (I-V) characteristics of bare and SAMs modified devices show rectification behaviour verifying a Schottky junction at the interface. The ideality factors (n) from ln(I)-V dependences were determined as 2.13, 1.96 and 2.07 for BLG/n-Si, BLG/TPA/n-Si and BLG/CAR/n-Si Schottky diodes, respectively. In addition, Schottky barrier height (SBH) and series resistance (Rs) of SAMs modified diodes were decreased compared to bare diode due to the formation of a compatible interface between graphene and Si as well as π-π interaction between aromatic SAMs and graphene. The CAR-based device exhibits better diode characteristic compared to the TPA-based device. Computational simulations show that the BLG/CAR system exhibits smaller energy-level-differences than the BLG/TPA, which supports the experimental findings of a lower Schottky barrier and series resistance in BLG/CAR diode.

  18. Analysis of high reverse currents of 4H-SiC Schottky-barrier diodes

    Science.gov (United States)

    Okino, Hiroyuki; Kameshiro, Norifumi; Konishi, Kumiko; Shima, Akio; Yamada, Ren-ichi

    2017-12-01

    Nickel (Ni), titanium (Ti), and molybdenum (Mo) 4H-silicon carbide Schottky-barrier diodes (SiC SBDs) were fabricated and used to investigate the relation between forward and reverse currents. Temperature dependence of reverse current follows a theory that includes tunneling in regard to thermionic emission, namely, temperature dependence is weak at low temperature but strong at high temperatures. On the other hand, the reverse currents of the Ni and Mo SBDs are higher than their respective currents calculated from their Schottky barrier heights (SBHs), whereas the reverse current of the Ti SBD agrees well with that calculated from its SBH. The cause of the high reverse currents was investigated from the viewpoints of low barrier patch, Gaussian distribution of barrier height (GD), thin surface barrier, and electron effective mass. The high reverse current of the Ni and Mo SBDs can be explained not in terms of a low-barrier patch, GD, or thin surface barrier but in terms of small effective masses. Investigation of crystal structures at the Schottky interface revealed a large lattice mismatch between the metals (Ni, Ti, or Mo) and SiC for the Ni and Mo SBDs. The small effective mass is possibly attributed to the large lattice mismatch, which might generate transition layers at the Schottky interface. It is concluded from these results that the lattice constant as well as the work function is an important factor in selecting the metal species as the Schottky metal for wide band-gap SBDs, for which tunneling current dominates reverse current.

  19. Free-standing gallium nitride Schottky diode characteristics and stability in a high-temperature environment

    Science.gov (United States)

    O'Mahony, Donagh; Zimmerman, Walter; Steffen, Sinje; Hilgarth, Just; Maaskant, Pleun; Ginige, Ravin; Lewis, Liam; Lambert, Benoit; Corbett, Brian

    2009-12-01

    Schottky diodes have been fabricated using low-resistivity n-type free-standing GaN substrates with a reduced defect density lowly doped n-type epi-layer and an Ni/Ti/Pt/Au Schottky contact metalization. A thermionic field emission current transport mechanism was identified with a Schottky barrier height of about 0.75 eV and a diode ideality of 1.1 measured at 25 °C, both of which increase with measurement temperature up to 200 °C. The diodes were subjected to long-term testing under forward current (1.3 A cm-2) or reverse voltage (-3.5 V) biased storage at 300 °C in N2 for 466 h and were also monitored under non-biased storage conditions for up to 1000 h at 350 °C and 400 °C in N2 or at 300 °C for 1500 h in air. Except for the non-biased storage test at 400 °C, the diodes show <10% drift in ideality and barrier height during the long-term storage tests. For the 400 °C test, there is a significant increase in both barrier height and ideality over a relatively short storage period (48 h). This to be the first reported study on the long-term stability of Schottky diodes on free-standing GaN and while no catastrophic (e.g. thermal runaway) degradation of any of the diodes was observed, it is proposed that optimized thermal annealing of the Ni-based Schottky contact metalization in the temperature range 350-400 °C is necessary for stable long-term operation at high temperature.

  20. "Mis on see luuletaja luule..." : [luuletused] / Juhan Viiding

    Index Scriptorium Estoniae

    Viiding, Juhan, 1948-1995

    2001-01-01

    Tekst eesti ja inglise k. J. Viidingu lühibiograafia eesti ja inglise k. lk. 151. Sisu: "Mis on see luuletaja luule..." = "So what is a poet's poetry then..." ; Eluküsimus = A question of life ; "sügisemees..." = "the autumn man..." ; "Lamades, seistes ja istudes..." = "Lying, standing or sitting..." ; "öö käest pannakse päeva käele..." = "from the hand of night to the hand of day..." ; "sa karjatad pikalt ja valuga..." = "you scream long and hard..." ; Tee = The road ; "tuisk on kolmandat päeva..." = "its's day three of the blizzard..." ; Latern = Street lamp ; "Eluaeg olen tahtnud õue..." = "All my life, I've wanted out..." ; "su südamepuuris on vaikus..." = "In the cage of your heart there is silence..."

  1. Mi muerte o mis sueños

    OpenAIRE

    Cuellar Ordoñez, Carmen Liliana

    2012-01-01

    Recuerdo perfectamente aquel día, 21 de septiembre de 2009, uno de los más difíciles hasta hoy. No sabía a quién echarle la culpa; si a Ecopetrol por brindarme la oportunidad de estar en Bogotá, a mis padres por no darme la orden de quedarme en la misma ciudad de ellos o a mi novio porque en gran parte sólo me fui para estar cerca de él Pensaba y pensaba recostada sobre la cama que muchos ya habrían usado. Tenía una baranda verde pastel con bordes que te lastimaban y dos colchones barato...

  2. Mis toimus Tartu Ülikoolis aastal 2004

    Index Scriptorium Estoniae

    2004-01-01

    Eesti Kooriühing andis Tartu Ülikooli kammerkoori dirigendile Triin Kochile aasta noore dirigendi tiitli. Tartu Akadeemilise meeskoori dirigent Alo Ritsing nimetati Tartu aukodanikuks. XV üliõpilaste laulu- ja tantsupidu "Gaudeamus" otsustati korraldada 2006. aastal Tartus. TÜ kammerkoor ja TÜ akadeemiline naiskoor pälvisid VIII Eesti kammerkooride festivalil esikohad. Helilooja, TÜ audoktor Arvo Pärt annetas raamatukogule oma muusikasalvestusi. Riias toimunud XIV üliõpilaste laulu- ja tantsupeol "Gaudeamus" osalesid TÜst meeskoor, naiskoor, kammerkoor, rahvakunstiansambel, Camerata Universitas Tartuensis. Aulas algas Pille Lille Muusikute toetusfondi korraldatav "Meistrite Akadeemia" kontserdisari, mis on aluseks kunstide osakonna uuele vabaainele "Muusikaesseistika".Vanemuise kontserdimajas oli ülikooli traditsiooniline aastapäevaball

  3. Does MIS Surgery Allow for Shorter Constructs in the Surgical Treatment of Adult Spinal Deformity?

    Science.gov (United States)

    Uribe, Juan S; Beckman, Joshua; Mummaneni, Praveen V; Okonkwo, David; Nunley, Pierce; Wang, Michael Y; Mundis, Gregory M; Park, Paul; Eastlack, Robert; Anand, Neel; Kanter, Adam; Lamarca, Frank; Fessler, Richard; Shaffrey, Chris I; Lafage, Virginie; Chou, Dean; Deviren, Vedat

    2017-03-01

    The length of construct can potentially influence perioperative risks in adult spinal deformity (ASD) surgery. A head-to-head comparison between open and minimally invasive surgery (MIS) techniques for treatment of ASD has yet to be performed. To examine the impact of MIS approaches on construct length and clinical outcomes in comparison to traditional open approaches when treating similar ASD profiles. Two multicenter databases for ASD, 1 involving MIS procedures and the other open procedures, were propensity matched for clinical and radiographic parameters in this observational study. Inclusion criteria were ASD and minimum 2-year follow-up. Independent t -test and chi-square test were used to evaluate and compare outcomes. A total of 1215 patients were identified, with 84 patients matched in each group. Statistical significance was found for mean levels fused (4.8 for circumferential MIS [cMIS] and 10.1 for open), mean interbody fusion levels (3.6 cMIS and 2.4 open), blood loss (estimated blood loss 488 mL cMIS and 1762 mL open), and hospital length of stay (6.7 days cMIS and 9.7 days open). There was no significant difference in preoperative radiographic parameters or postoperative clinical outcomes (Owestry Disability Index and visual analog scale) between groups. There was a significant difference in postoperative lumbar lordosis (43.3° cMIS and 49.8° open) and pelvic incidence-lumbar lordosis correction (10.6° cMIS and 5.2° open) in the open group. There was no significant difference in reoperation rate between the 2 groups. MIS techniques for ASD may reduce construct length, reoperation rates, blood loss, and length of stay without affecting clinical and radiographic outcomes when compared to a similar group of patients treated with open techniques.

  4. Sales controlling comes into view. MIS (management information system) Deutschland GmbH fits energy suppliers; Vertriebscontrolling in Sicht. MIS Deutschland GmbH macht Energieversorger fit

    Energy Technology Data Exchange (ETDEWEB)

    Anon.

    2002-03-01

    MIS has integrated Microsoft-Excel efficiently, so appliers must not change other systems, can utilize advantages and know how and further functionalities like optimization of planning processes, automation of data processing, generation of a data base with structured information of energy data are available for customers.(GL) [German] Die MIS Deutschland GmbH wurde 1988 gegruendet. Die Gruender waren Studenten der Universitaet Darmstadt. Einer von ihnen ist noch heute Vorstandsvorsitzender der MIS AG. Schon damals hatte man die Vision, Manager oder die Entscheidungstraeger in Unternehmen mit Informationen zu versorgen und in die Lage zu versetzen, diese auch nach ihren Beduerfnissen auswerten, analysieren und reporten zu koennen. Dadurch entstand 1988 in Zusammenarbeit mit Microsoft die erste Microsoft-Excel-Konferenz in Deutschland. MIS hat Microsoft-Excel leistungsfaehig integriert, sodass der Anwender nicht auf ein anderes System umlernen muss, sondern die Vorteile und das Know-how Weiterverwenden kann und zusaetzlich weitere Funktionalitaeten zur Verfuegung gestellt bekommt. (orig.)

  5. Effect of Illumination on the Photovoltaic Parameters of Al/p-Si Diode with an Organic Interlayer Prepared by Spin Coating Method

    Directory of Open Access Journals (Sweden)

    Arife GENCER IMER

    2016-12-01

    Full Text Available In this study, the photovoltaic device application of bromothymol blue (BTB as an organic interlayer has been reported. After Al back contact fabrication on the surface of the chemically cleaned substrate by thermal evaporation method, the organic interlayer has been grown on p-Si substrate via spin coating technique. Al top contacts have been formed on this organic thin film to finalize the device constructions. The different illumination intensities were exposed to the prepared sample for the enhancement in the photovoltaic properties of device. The fundamental photovoltaic parameters such as open circuit voltage (Voc, short circuit current (Isc and output power (P were determined for the device under different illuminations. The photocurrent and the photo voltage have been increased with the increasing in illumination intensity. The dependence of the capacitance on the voltage at high and low frequency has been also reported for the studied device. Consequently, it has been confirmed that the illumination intensity has an important influence on the photovoltaic parameters of the device.

  6. Performance Improvement of Microcrystalline p-SiC/i-Si/n-Si Thin Film Solar Cells by Using Laser-Assisted Plasma Enhanced Chemical Vapor Deposition

    Directory of Open Access Journals (Sweden)

    Hsin-Ying Lee

    2014-01-01

    Full Text Available The microcrystalline p-SiC/i-Si/n-Si thin film solar cells treated with hydrogen plasma were fabricated at low temperature using a CO2 laser-assisted plasma enhanced chemical vapor deposition (LAPECVD system. According to the micro-Raman results, the i-Si films shifted from 482 cm−1 to 512 cm−1 as the assisting laser power increased from 0 W to 80 W, which indicated a gradual transformation from amorphous to crystalline Si. From X-ray diffraction (XRD results, the microcrystalline i-Si films with (111, (220, and (311 diffraction were obtained. Compared with the Si-based thin film solar cells deposited without laser assistance, the short-circuit current density and the power conversion efficiency of the solar cells with assisting laser power of 80 W were improved from 14.38 mA/cm2 to 18.16 mA/cm2 and from 6.89% to 8.58%, respectively.

  7. Resistive switching mechanism in the one diode-one resistor memory based on p+-Si/n-ZnO heterostructure revealed by in-situ TEM.

    Science.gov (United States)

    Zhang, Lei; Zhu, Liang; Li, Xiaomei; Xu, Zhi; Wang, Wenlong; Bai, Xuedong

    2017-03-21

    One diode-one resistor (1D1R) memory is an effective architecture to suppress the crosstalk interference, realizing the crossbar network integration of resistive random access memory (RRAM). Herein, we designed a p + -Si/n-ZnO heterostructure with 1D1R function. Compared with the conventional multilayer 1D1R devices, the structure and fabrication technique can be largely simplified. The real-time imaging of formation/rupture process of conductive filament (CF) process demonstrated the RS mechanism by in-situ transmission electron microscopy (TEM). Meanwhile, we observed that the formed CF is only confined to the outside of depletion region of Si/ZnO pn junction, and the formation of CF does not degrade the diode performance, which allows the coexistence of RS and rectifying behaviors, revealing the 1D1R switching model. Furthermore, it has been confirmed that the CF is consisting of the oxygen vacancy by in-situ TEM characterization.

  8. Optoelectronic properties of p-n and p-i-n heterojunction devices prepared by electrodeposition of n-ZnO on p-Si

    Science.gov (United States)

    Rakhshani, A. E.

    2010-11-01

    The importance of silicon based optoelectronic devices is due to the well developed silicon technology and its potential for device integration. ZnO/Si light emitting diodes reported in the literature are based mainly on ZnO films grown by the vapor-phase techniques. Electrodeposition, a cost-effective and simple method, has not been explored adequately for the fabrication of such devices. In this study, ZnO films were electrodeposited on the (100) plane of highly B-doped p-Si substrates. Heterojunction devices (p-n and p-i-n) were constructed and characterized by means of current-voltage, capacitance-voltage, photocurrent spectroscopy, photoluminescence, and electroluminescence measurements. Electrodeposition yields compact films with a native donor density ˜1017 cm-3. Diffusion of boron from Si into ZnO, during an annealing process, yields graded p-n junctions with enhanced electroluminescence. Devices exhibit a reasonably good photoresponse in the ultraviolet-blue range. The absorption of subband gap photons in ZnO shows an Urbach tail with a characteristic energy of 115 meV. The absorption and emission of light involves two prominent defect levels in ZnO, namely, L1 and E1.

  9. 48 CFR 226.370-8 - Goals and incentives for subcontracting with HBCU/MIs.

    Science.gov (United States)

    2010-10-01

    ... subcontracting with HBCU/MIs. 226.370-8 Section 226.370-8 Federal Acquisition Regulations System DEFENSE... subcontracting with HBCU/MIs. (a) In reviewing subcontracting plans submitted under the clause at FAR 52.219-9, Small Business Subcontracting Plan, the contracting officer shall— (1) Ensure that the contractor...

  10. Space Station Furnace Facility Management Information System (SSFF-MIS) Development

    Science.gov (United States)

    Mead, Robert M.

    1996-01-01

    Thios report summarizes the chronology, results, and lessons learned from the development of the SSFF-MIS. This system has been nearly two years in development and has yielded some valuable insights into specialized MIS development. Attachment A contains additions, corrections, and deletions by the COTR.

  11. Mis-Education: A Recurring Theme? Transforming Black Religious and Theological Education

    Science.gov (United States)

    Wright, Almeda M.

    2017-01-01

    Educating ministers and religious educators with the skills to connect with a variety of congregations and communities is a difficult task. Looking specifically at theological and religious education with African Americans, there are historical criticisms of "mis-education." "Mis-education" defined by Carter G. Woodson…

  12. Carter G. Woodson's Mis-Education of the Negro: A Re-Visit

    Science.gov (United States)

    Hay, Samuel A.

    1975-01-01

    Discusses the thesis of C. G. Woodson's book, "Mis-Education of the Negro" (1933), and argues that the liberation of the Black in America depends to a large measure on the quality of his education: the change of their lot demands that the mis-educated re-educate himself and that the panorama of great Black achievers be ever before the…

  13. Training for MIS in pediatric urology: proposition of a structured training curriculum.

    Science.gov (United States)

    Escolino, Maria; Turrà, Francesco; Settimi, Alessandro; Esposito, Ciro

    2016-10-01

    In Europe there are a lot of training centers for minimally invasive surgery (MIS) but a standardized MIS training program in pediatric urology doesn't exist at the moment. We performed a literature review with the last goals to propose a structured training curriculum in MIS urology for pediatric surgeons. Pediatric urologists have to obtain a valid MIS training curriculum completing the following 4 steps: (I) Theoretical part (theoretical courses, masterclass) to acquire theoretical knowledge; (II) experimental training (simulation on pelvic trainer, virtual reality simulators, animal models, 3-D ex-vivo models) to acquire basic laparoscopic skills; (III) stages in European centers of reference for pediatric MIS urology to learn all surgery aspects; (IV) personal operative experience. At the end of the training period, the trainee would be expected to perform several MIS urological procedures independently, under supervision of an expert tutor. At the end of the training program, each center will analyze the candidate training booklet and release for each applicant a certification after an exam. We think that this MIS training program in pediatric urology may assure an integrated acquisition of basic and advanced laparoscopic skills during residency training in pediatric urology. Each European country should adopt this program so as to secure a standardized technical qualification in MIS urology for all future pediatric urologists.

  14. Extraction of the Schottky parameters in metal-semiconductor-metal diodes from a single current-voltage measurement

    OpenAIRE

    Nouchi, Ryo

    2014-01-01

    In order to develop a method to extract the parameters of the two inherent Schottky contacts from a single current-voltage (I-V) characteristic curve, the I-V characteristics of metal-semiconductor-metal (MSM) diodes with asymmetric Schottky barrier heights are theoretically investigated using the thermionic emission model. The MSM diode structure is commonly used because an additional MS interface is required for the electrical characterization of MS diodes. A finite charge-injection barrier...

  15. Out-of-plane strain and electric field tunable electronic properties and Schottky contact of graphene/antimonene heterostructure

    Science.gov (United States)

    Phuc, Huynh V.; Hieu, Nguyen N.; Hoi, Bui D.; Phuong, Le T. T.; Hieu, Nguyen V.; Nguyen, Chuong V.

    2017-12-01

    In this paper, the electronic properties of graphene/monolayer antimonene (G/m-Sb) heterostructure have been studied using the density functional theory (DFT). The effects of out-of-plane strain (interlayer coupling) and electric field on the electronic properties and Schottky contact of the G/m-Sb heterostructure are also investigated. The results show that graphene is bound to m-Sb layer by a weak van-der-Waals interaction with the interlayer distance of 3.50 Å and the binding energy per carbon atom of -39.62 meV. We find that the n-type Schottky contact is formed at the G/m-Sb heterostructure with the Schottky barrier height (SBH) of 0.60 eV. By varying the interlayer distance between graphene and the m-Sb layer we can change the n-type and p-type SBH at the G/m-Sb heterostructure. Especially, we find the transformation from n-type to p-type Schottky contact with decreasing the interlayer distance. Furthermore, the SBH and the Schottky contact could be controlled by applying the perpendicular electric field. With the positive electric field, electrons can easily transfer from m-Sb to graphene layer, leading to the transition from n-type to p-type Schottky contact.

  16. Surface Modification on the Sputtering-Deposited ZnO Layer for ZnO-Based Schottky Diode

    Directory of Open Access Journals (Sweden)

    Ren-Hao Chang

    2013-01-01

    Full Text Available We prepare a zinc oxide- (ZnO- based Schottky diode constructed from the transparent cosputtered indium tin oxide- (ITO- ZnO ohmic contact electrode and Ni/Au Schottky metal. After optimizing the ohmic contact property and removing the ion-bombardment damages using dilute HCl etching solution, the dilute hydrogen peroxide (H2O2 and ammonium sulfide (NH42Sx solutions, respectively, are employed to modify the undoped ZnO layer surface. Both of the Schottky barrier heights with the ZnO layer surface treated by these two solutions, evaluated from the current-voltage (I-V and capacitance-voltage (C-V measurements, are remarkably enhanced as compared to the untreated ZnO-based Schottky diode. Through the X-ray photoelectron spectroscopy (XPS and room-temperature photoluminescence (RTPL investigations, the compensation effect as evidence of the increases in the O–H and OZn acceptor defects appearing on the ZnO layer surface after treating by the dilute H2O2 solution is responsible for the improvement of the ZnO-based Schottky diode. By contrast, the enhancement on the Schottky barrier height for the ZnO layer surface treated by using dilute (NH42Sx solution is attributed to both the passivation and compensation effects originating from the formation of the Zn–S chemical bond and VZn acceptors.

  17. Frequency and voltage dependence dielectric properties, ac electrical conductivity and electric modulus profiles in Al/Co{sub 3}O{sub 4}-PVA/p-Si structures

    Energy Technology Data Exchange (ETDEWEB)

    Bilkan, Çiğdem, E-mail: cigdembilkan@gmail.com [Department of Physics, Faculty of Sciences, The University of Çankırı Karatekin, 18100 Çankırı (Turkey); Azizian-Kalandaragh, Yashar [Department of Physics, Faculty of Science, The University of Mohaghegh Ardabili, Ardabil (Iran, Islamic Republic of); Altındal, Şemsettin [Department of Physics, Faculty of Sciences, The University of Gazi, 06500 Ankara (Turkey); Shokrani-Havigh, Roya [Department of Physics, Faculty of Science, The University of Mohaghegh Ardabili, Ardabil (Iran, Islamic Republic of)

    2016-11-01

    In this research a simple microwave-assisted method have been used for preparation of cobalt oxide nanostructures. The as-prepared sample has been investigated by UV–vis spectroscopy, X-ray diffraction (XRD), scanning electron microscopy (SEM). On the other hand, frequency and voltage dependence of both the real and imaginary parts of dielectric constants (ε′, ε″) and electric modulus (M′ and M″), loss tangent (tanδ), and ac electrical conductivity (σ{sub ac}) values of Al/Co{sub 3}O{sub 4}-PVA/p-Si structures were obtained in the wide range of frequency and voltage using capacitance (C) and conductance (G/ω) data at room temperature. The values of ε′, ε″ and tanδ were found to decrease with increasing frequency almost for each applied bias voltage, but the changes in these parameters become more effective in the depletion region at low frequencies due to the charges at surface states and their relaxation time and polarization effect. While the value of σ is almost constant at low frequency, increases almost as exponentially at high frequency which are corresponding to σ{sub dc} and σ{sub ac}, respectively. The M′ and M″ have low values at low frequencies region and then an increase with frequency due to short-range mobility of charge carriers. While the value of M′ increase with increasing frequency, the value of M″ shows two peak and the peaks positions shifts to higher frequency with increasing applied voltage due to the decrease of the polarization and N{sub ss} effects with increasing frequency.

  18. Charge transport mechanisms of graphene/semiconductor Schottky barriers: A theoretical and experimental study

    Energy Technology Data Exchange (ETDEWEB)

    Zhong, Haijian; Liu, Zhenghui; Xu, Gengzhao; Shi, Lin; Fan, Yingmin; Yang, Hui [Suzhou Institute of Nano-Tech and Nano-Bionics, CAS, Suzhou 215123 (China); Xu, Ke, E-mail: kxu2006@sinano.ac.cn; Wang, Jianfeng; Ren, Guoqiang [Suzhou Institute of Nano-Tech and Nano-Bionics, CAS, Suzhou 215123 (China); Suzhou Nanowin Science and Technology Co., Ltd., Suzhou 215123 (China)

    2014-01-07

    Graphene has been proposed as a material for semiconductor electronic and optoelectronic devices. Understanding the charge transport mechanisms of graphene/semiconductor Schottky barriers will be crucial for future applications. Here, we report a theoretical model to describe the transport mechanisms at the interface of graphene and semiconductors based on conventional semiconductor Schottky theory and a floating Fermi level of graphene. The contact barrier heights can be estimated through this model and be close to the values obtained from the experiments, which are lower than those of the metal/semiconductor contacts. A detailed analysis reveals that the barrier heights are as the function of the interface separations and dielectric constants, and are influenced by the interfacial states of semiconductors. Our calculations show how this behavior of lowering barrier heights arises from the Fermi level shift of graphene induced by the charge transfer owing to the unique linear electronic structure.

  19. Analysis of the active layer in SI GaAs Schottky diodes

    Energy Technology Data Exchange (ETDEWEB)

    Castaldini, A.; Cavallini, A.; Polenta, L. [Bologna Univ. (Italy). Dipt. di Fisica]|[INFM, Bologna (Italy); Canali, C. [INFM and Dipartimento di Scienze dell`Ingegneria, Universita` di Modena, Via Campi 213/B, Modena (Italy); Nava, F. [INFN and Dipartimento di Fisica, Universita` di Modena, Via Campi 213/A, Modena (Italy)

    1998-06-01

    The behavior of the active region width W of semi-insulating gallium arsenide Schottky diodes versus reverse biasing has been investigated by optical beam induced current and surface potential techniques. It has been found that at low applied voltages, W follows the square root law peculiar to a Schottky barrier while, for a bias higher than 20 V, the active layer increases linearly with the voltage applied. To go deeper into this matter, the spatial distribution of the electric field has been analyzed in a wide range of bias voltages and it has been observed that at high voltages a plateau occurs, followed by a linear decrease down to a quasi-zero value. In terms of space charge distribution this means that there is a box-shaped space charge region moving towards the ohmic contact at increasing bias. (orig.) 21 refs.

  20. High performance and transparent multilayer MoS2 transistors: Tuning Schottky barrier characteristics

    Directory of Open Access Journals (Sweden)

    Young Ki Hong

    2016-05-01

    Full Text Available Various strategies and mechanisms have been suggested for investigating a Schottky contact behavior in molybdenum disulfide (MoS2 thin-film transistor (TFT, which are still in much debate and controversy. As one of promising breakthrough for transparent electronics with a high device performance, we have realized MoS2 TFTs with source/drain electrodes consisting of transparent bi-layers of a conducting oxide over a thin film of low work function metal. Intercalation of a low work function metal layer, such as aluminum, between MoS2 and transparent source/drain electrodes makes it possible to optimize the Schottky contact characteristics, resulting in about 24-fold and 3 orders of magnitude enhancement of the field-effect mobility and on-off current ratio, respectively, as well as transmittance of 87.4 % in the visible wavelength range.

  1. A Silicon Nanocrystal Schottky Junction Solar Cell produced from Colloidal Silicon Nanocrystals

    Directory of Open Access Journals (Sweden)

    Liu Chin-Yi

    2010-01-01

    Full Text Available Abstract Solution-processed semiconductors are seen as a promising route to reducing the cost of the photovoltaic device manufacture. We are reporting a single-layer Schottky photovoltaic device that was fabricated by spin-coating intrinsic silicon nanocrystals (Si NCs from colloidal suspension. The thin-film formation process was based on Si NCs without any ligand attachment, exchange, or removal reactions. The Schottky junction device showed a photovoltaic response with a power conversion efficiency of 0.02%, a fill factor of 0.26, short circuit-current density of 0.148 mA/cm2, and open-circuit voltage of 0.51 V.

  2. On-Chip Power-Combining for High-Power Schottky Diode-Based Frequency Multipliers

    Science.gov (United States)

    Chattopadhyay, Goutam; Mehdi, Imran; Schlecht, Erich T.; Lee, Choonsup; Siles, Jose V.; Maestrini, Alain E.; Thomas, Bertrand; Jung, Cecile D.

    2013-01-01

    A 1.6-THz power-combined Schottky frequency tripler was designed to handle approximately 30 mW input power. The design of Schottky-based triplers at this frequency range is mainly constrained by the shrinkage of the waveguide dimensions with frequency and the minimum diode mesa sizes, which limits the maximum number of diodes that can be placed on the chip to no more than two. Hence, multiple-chip power-combined schemes become necessary to increase the power-handling capabilities of high-frequency multipliers. The design presented here overcomes difficulties by performing the power-combining directly on-chip. Four E-probes are located at a single input waveguide in order to equally pump four multiplying structures (featuring two diodes each). The produced output power is then recombined at the output using the same concept.

  3. An improved forward I-V method for nonideal Schottky diodes with high series resistance

    Science.gov (United States)

    Lien, C.-D.; So, F. C. T.; Nicolet, M.-A.

    1984-01-01

    Two methods are described to obtain the value of the series resistance (R) of a Schottky diode from its forward I-V characteristic. The value of R is then used to plot the curve ln(I) versus V sub D (= V - IR) which becomes a straight line even if ln(I) versus V does not. The ideality factor n and the Schottky-barrier height of the diode then follow from the standard procedure. The main advantages of the methods are: (1) a linear regression can be used to calculate the value of R; (2) many data points are used over the whole data range, which raises the accuracy of the results, and (3) the validity of constant R assumption can be checked by the linearity of the ln (I) versus V sub D curve. The methods are illustrated on the experimental data of a real diode.

  4. Model and observations of Schottky-noise suppression in a cold heavy-ion beam.

    Science.gov (United States)

    Danared, H; Källberg, A; Rensfelt, K-G; Simonsson, A

    2002-04-29

    Some years ago it was found at GSI in Darmstadt that the momentum spread of electron-cooled beams of highly charged ions dropped abruptly to very low values when the particle number decreased to 10 000 or less. This has been interpreted as an ordering of the ions, such that they line up after one another in the ring. We report observations of similar transitions at CRYRING, including an accompanying drop in Schottky-noise power. We also introduce a model of the ordered beam from which the Schottky-noise power can be calculated numerically. The good agreement between the model calculation and the experimental data is seen as evidence for a spatial ordering of the ions.

  5. Schottky Photodiode Fabricated from Hydrogen-Peroxide-Treated ZnO Nanowires

    Science.gov (United States)

    Lee, Hsin-Yen; Wu, Bin-Kun; Chern, Ming-Yau

    2013-05-01

    An effective, transparent solar-blind Schottky ultraviolet (UV) sensor made of zinc oxide (ZnO) nanowires (NWs) was fabricated by chemical vapor deposition (CVD). Indium-tin oxide (ITO) thin films were deposited by radio frequency (RF) sputtering as Schottky contacts, where the hydrogen peroxide (H2O2) treatment of ZnO NWs played a key role in the rectifying effect. The photodiode showed a fitted barrier height of 0.89 eV, an ideality factor of 1.82, and a rectification behavior of up to three orders of magnitude at a voltage bias between -1 and +1 V. Photoresponse measurement proved a reliable device in the UV region.

  6. Fabrication of 4H-SiC Schottky barrier diodes with high breakdown voltages

    CERN Document Server

    Kum, B H; Shin, M W; Park, J D

    1999-01-01

    This paper discusses the fabrication and the breakdown characteristics of 4H-SiC Schottky barrier diodes (SBDs). Optimal processing conditions for the ohmic contacts were extracted using the transmission-line method (TLM) and were applied to the device fabrication. The Ti/4H-SiC SBDs with Si sub x B sub y passivation showed a maximum reverse breakdown voltage of 268 V with a forward current density as high as 70 mA/cm sup 2 at a forward voltage of 2 V. The breakdown of the Pt. 4H-SiC SBDs without any passivation occurred at near 110 V. It is concluded that the breakdown enhancement in the Ti/4H-SiC SBDs can be attributed to the passivation; otherwise, excess surface charge near the edge of the Schottky contact would lead to electric fields of sufficient magnitude to cause field emission.

  7. Operation regimes and electrical transport of steep slope Schottky Si-FinFETs

    Science.gov (United States)

    Jeon, Dae-Young; Zhang, Jian; Trommer, Jens; Park, So Jeong; Gaillardon, Pierre-Emmanuel; De Micheli, Giovanni; Mikolajick, Thomas; Weber, Walter M.

    2017-02-01

    In the quest for energy efficient circuits, considerable focus has been given to steep slope and polarity-controllable devices, targeting low supply voltages and reduction of transistor count. The recently proposed concept of the three-independent gated Si-FinFETs with Schottky-barriers (SBs) has proven to bring both functionalities even in a single device. However, the complex combination of transport properties including Schottky emission and weak impact ionization as well as the body effect makes the design of such devices challenging. In this work, we perform a deep electrical characterization analysis to visualize and decouple the different operation regimes and electrical properties of the SB Si-FinFETs using a graphical transport map. From these, we give important guidelines for the design of future devices.

  8. Fabrication of polymer Schottky diode with Al-PANI/MWCNT-Au structure

    Directory of Open Access Journals (Sweden)

    A Hajibadali

    2014-11-01

    Full Text Available In this research, Schottky diode with Al-PANI/MWCNT-Au structure was fabricated using spin coating of composite polymer and physical vapor deposition of metals. For this purpose, a thin layer of gold was coated on glass and then composite of polyaniline/multi-walled carbon nanotube was synthesized and spin-coated on gold layer. Finally, a thin layer of aluminum was coated on polymer layer. The current-voltage characteristics of diode were studied and found that I-V curve is nonlinear and nonsymmetrical, showing rectifying behavior. I-V characteristics plotted on a logarithmic scale for Schottky diode showed two distinct power law regions. At lower voltages, the mechanism follows Ohm’s Law and at higher voltages, the mechanism is consistent with space charge limited conduction (SCLC emission. The parameters extracted from I-V characteristics were also calculated.

  9. Schottky barrier height tuning using P+ DSS for NMOS contact resistance reduction

    Science.gov (United States)

    Khaja, Fareen Adeni; Rao, K. V.; Ni, Chi-Nung; Muthukrishnan, Shankar; Lei, Jianxin; Darlark, Andrew; Peidous, Igor; Brand, Adam; Henry, Todd; Variam, Naushad

    2012-11-01

    Nickel silicide (NiSi) contacts are adopted in advanced CMOS technology nodes as they demonstrate several benefits such as low resistivity, low Si consumption and formation temperature. But a disadvantage of NiSi contacts is that they exhibit high electron Schottky barrier height (SBH), which results in high contact resistance (Rc) and reduces the NMOS drive current. To reduce SBH for NMOS, we used phosphorous (P) ion implantation into NiPt silicide with optimized anneal in order to form dopant segregated Schottky (DSS). Electrical characterization was performed using test structures such as Transmission Line Model, Cross-Bridge Kelvin Resistor, Van der Pauw and diodes to extract Rc and understand the effects of P+ DSS on ΦBn tuning. Material characterization was performed using SIMS, SEM and TEM analysis. We report ˜45% reduction in Rc over reference sample by optimizing ion implantation and anneal conditions (spike RTA, milli-second laser anneals (DSA)).

  10. CURRENT ISSUES IN OUTSOURCING: MIS, AIS AND BEYOND

    Directory of Open Access Journals (Sweden)

    AIDA SY

    2012-01-01

    Full Text Available En años recientes, el outsourcing se ha venido convirtiendo en una tendencia tanto en empresas de Europa y los Estados Unidos. Ni siquiera, trabajadores muy calificados se salvan de este asalto.La vanidad de los intelectuales y los profesionales que ejecutan tanto sistemas de información contable(AIS, como sistemas de información de gestión (MIS es su creencia de que están exentos de estosprocesos de outsourcing. Algunos creen que disfrutan de una vida de ensueño, que la demanda de sus servicios está asegurada. Se consuelan pensando que el aumento de su dominiotécnico les ofrece una defensa suficiente contra los ataques provenientes del mercado laboral y de productos.Una interpretación desde los estudios críticos indicará que esta posición es un acto dearrogancia, siendo esto el eje de la discusión de este documento. Tal actitud de los profesionales contables es una reminiscencia del Rey Canuto esperando que la marea retroceda.

  11. Vertically grown Ge nanowire Schottky diodes on Si and Ge substrates

    Science.gov (United States)

    Chandra, Nishant; Tracy, Clarence J.; Cho, Jeong-Hyun; Picraux, S. T.; Hathwar, Raghuraj; Goodnick, Stephen M.

    2015-07-01

    The processing and performance of Schottky diodes formed from arrays of vertical Ge nanowires (NWs) grown on Ge and Si substrates are reported. The goal of this work is to investigate CMOS compatible processes for integrating NWs as components of vertically scaled integrated circuits, and elucidate transport in vertical Schottky NWs. Vertical phosphorus (P) doped Ge NWs were grown using vapor-liquid-solid epitaxy, and nickel (Ni)-Ge Schottky contacts were made to the tops of the NWs. Current-voltage (I-V) characteristics were measured for variable ranges of NW diameters and numbers of nanowires in the arrays, and the I-V characteristics were fit using modified thermionic emission theory to extract the barrier height and ideality factor. As grown NWs did not show rectifying behavior due to the presence of heavy P side-wall doping during growth, resulting in a tunnel contact. After sidewall etching using a dilute peroxide solution, rectifying behavior was obtained. Schottky barrier heights of 0.3-0.4 V and ideality factors close to 2 were extracted using thermionic emission theory, although the model does not give an accurate fit across the whole bias range. Attempts to account for enhanced side-wall conduction due to non-uniform P doping profile during growth through a simple shunt resistance improve the fit, but are still insufficient to provide a good fit. Full three-dimensional numerical modeling using Silvaco Atlas indicates that at least part of this effect is due to the presence of fixed charge and acceptor like traps on the NW surface, which leads to effectively high ideality factors.

  12. Charged particle detection properties of epitaxial 4H-SiC Schottky diodes

    Energy Technology Data Exchange (ETDEWEB)

    Nava, F.; Vanni, P. [Modena Univ. (Italy). Ist. di Fisica; Verzellesi, G. [Modena Univ. (Italy). DSI; Castaldini, A.; Cavallini, A.; Polenta, L. [Bologna Univ. (Italy). Dipt. di Fisica; Nipoti, R.; Donolato, C. [Consiglio Nazionale delle Ricerche, Bologna (Italy). Ist. LAMEL

    2001-07-01

    This work presents measurements of the charge-collection properties of 4H-SiC Schottky diodes under alpha radiation and investigates the influence of native and alpha induced defects on the detector performance. The contribution of the diffusion of minority carriers to the charge collection efficiency is pointed out. Values of 500 ns and 95 {mu}s are inferred for the hole and electron lifetime, respectively. (orig.)

  13. Schottky contact formation on polar and non-polar AlN

    Energy Technology Data Exchange (ETDEWEB)

    Reddy, Pramod; Bryan, Isaac; Bryan, Zachary; Tweedie, James; Kirste, Ronny; Collazo, Ramon; Sitar, Zlatko [Department of Materials Science and Engineering, North Carolina State University, Raleigh, North Carolina 27695-7919 (United States)

    2014-11-21

    The interfaces of m- and c-plane AlN with metals of different work functions and electro-negativities were characterized and the Schottky barrier heights were measured. The Schottky barrier height was determined by measuring the valence band maximum (VBM) with respect to the Fermi level at the surface (interface) before (after) metallization. VBM determination included accurate modeling and curve fitting of density of states at the valence band edge with the XPS data. The experimental behavior of the barrier heights could not be explained by the Schottky-Mott model and was modeled using InterFace-Induced Gap States (IFIGS). A slope parameter (S{sub X}) was used to incorporate the density of surface states and is a measure of Fermi level pinning. The experimental barriers followed theoretical predictions with a barrier height at the surface Fermi level (Charge neutrality level (CNL)) of ∼2.1 eV (∼2.7 eV) on m-plane (c-plane) and S{sub X} ∼ 0.36 eV/Miedema unit. Slope parameter much lower than 0.86 implied a surface/interface states dominated behavior with significant Fermi level pinning and the measured barrier heights were close to the CNL. Titanium and zirconium provided the lowest barriers (1.6 eV) with gold providing the highest (2.3 eV) among the metals analyzed on m-plane. It was consistently found that barrier heights decreased from metal polar to non-polar surfaces, in general, due to an increasing CNL. The data indicated that charged IFIGS compensate spontaneous polarization charge. These barrier height and slope parameter measurements provided essential information for designing Schottky diodes and other contact-based devices on AlN.

  14. 5.2% efficient PbS nanocrystal Schottky solar cells

    OpenAIRE

    Piliego, Claudia; Protesescu, Loredana; Bisri, Satria Zulkarnaen; Kovalenko, Maksym V.; Loi, Maria Antonietta

    2013-01-01

    The impact of post-synthetic treatments of nanocrystals (NCs) on the performance of Schottky solar cells, where the active PbS nanocrystal layer is sandwiched directly between two electrodes, is investigated. By monitoring the amount of ligands on the surface of the nanocrystals through Fourier Transform Infrared (FTIR) measurements, we find that optimized processing conditions can lead to high current density and thus to an increase in overall efficiency. Our devices reach an efficiency of 5...

  15. Sputtered Gold as an Effective Schottky Gate for Strained Si/SiGe Nanostructures

    Science.gov (United States)

    Scott, Gavin; Xiao, Ming; Croke, Ed; Yablonovitch, Eli; Jiang, Hongwen

    2007-03-01

    Metallization of Schottky surface gates by sputtering Au on strained Si/SiGe heterojunctions enables the depletion of the two dimensional electron gas (2DEG) at a relatively small voltage while maintaining an extremely low level of leakage current. A fabrication process has been developed to enable the formation of sub-micron Au electrodes sputtered onto Si/SiGe without the need of a wetting layer.

  16. Theory of photoexcited and thermionic emission across a two-dimensional graphene-semiconductor Schottky junction

    OpenAIRE

    Trushin, Maxim

    2017-01-01

    We find that intrinsic graphene provides efficient photocarrier transport across a two-dimensional graphene-semiconductor Schottky junction as a linear response to monochromatic light with excitation energy well below the semiconductor bandgap. The operation mechanism relies both on zero-bias photoexcited and thermionic emission contributing to photoresponsivity, enabled by the extended photocarrier thermalization time in intrinsic graphene. The photoresponsivity rapidly increases with excita...

  17. Schottky-Gated Probe-Free ZnO Nanowire Biosensor

    KAUST Repository

    Yeh, Ping-Hung

    2009-12-28

    (Figure Presented) A nanowire-based nanosensor for detecting biologically and chemically charged molecules that is probe-free and highly sensitive is demonstrated. The device relies on the nonsymmetrical Schottky contact under reverse bias (see figure) and is much more sensitive than the device based on the symmetric ohmic contact. This approach serves as a guideline for designing more practical chemical and biochemical sensors. © 2009 WILEY-VCH Verlag GmbH & Co. KGaA.

  18. Modeling and Design of a New Flexible Graphene-on-Silicon Schottky Junction Solar Cell

    OpenAIRE

    Francesco Dell’Olio; Michele Palmitessa; Caterina Ciminelli

    2016-01-01

    A new graphene-based flexible solar cell with a power conversion efficiency >10% has been designed. The environmental stability and the low complexity of the fabrication process are the two main advantages of the proposed device with respect to other flexible solar cells. The designed solar cell is a graphene/silicon Schottky junction whose performance has been enhanced by a graphene oxide layer deposited on the graphene sheet. The effect of the graphene oxide is to dope the graphene and t...

  19. Electrical degradation of double-Schottky barrier in ZnO varistors

    Directory of Open Access Journals (Sweden)

    Jinliang He

    2016-03-01

    Full Text Available Researches on electrical degradation of double-Schottky barrier in ZnO varistors are reviewed, aimed at the constitution of a full picture of universal degradation mechanism within the perspective of defect. Recent advances in study of ZnO materials by atomic-scale first-principles calculations are partly included and discussed, which brings to our attention distinct cognition on the native point defects and their profound impact on degradation.

  20. Electrical degradation of double-Schottky barrier in ZnO varistors

    Energy Technology Data Exchange (ETDEWEB)

    He, Jinliang, E-mail: hejl@tsinghua.edu.cn; Cheng, Chenlu; Hu, Jun [The State Key Lab of Power System, Department of Electrical Engineering, Tsinghua University, Beijing 100084 (China)

    2016-03-15

    Researches on electrical degradation of double-Schottky barrier in ZnO varistors are reviewed, aimed at the constitution of a full picture of universal degradation mechanism within the perspective of defect. Recent advances in study of ZnO materials by atomic-scale first-principles calculations are partly included and discussed, which brings to our attention distinct cognition on the native point defects and their profound impact on degradation.

  1. 670-GHz Schottky Diode-Based Subharmonic Mixer with CPW Circuits and 70-GHz IF

    Science.gov (United States)

    Chattopadhyay, Goutam; Schlecht, Erich T.; Lee, Choonsup; Lin, Robert H.; Gill, John J.; Mehdi, Imran; Sin, Seth; Deal, William; Loi, Kwok K.; Nam, Peta; hide

    2012-01-01

    GaAs-based, sub-harmonically pumped Schottky diode mixers offer a number of advantages for array implementation in a heterodyne receiver system. Since the radio frequency (RF) and local oscillator (LO) signals are far apart, system design becomes much simpler. A proprietary planar GaAs Schottky diode process was developed that results in very low parasitic anodes that have cutoff frequencies in the tens of terahertz. This technology enables robust implementation of monolithic mixer and frequency multiplier circuits well into the terahertz frequency range. Using optical and e-beam lithography, and conventional epitaxial layer design with innovative usage of GaAs membranes and metal beam leads, high-performance terahertz circuits can be designed with high fidelity. All of these mixers use metal waveguide structures for housing. Metal machined structures for RF and LO coupling hamper these mixers to be integrated in multi-pixel heterodyne array receivers for spectroscopic and imaging applications. Moreover, the recent developments of terahertz transistors on InP substrate provide an opportunity, for the first time, to have integrated amplifiers followed by Schottky diode mixers in a heterodyne receiver at these frequencies. Since the amplifiers are developed on a planar architecture to facilitate multi-pixel array implementation, it is quite important to find alternative architecture to waveguide-based mixers.

  2. Reducing the Schottky barrier between few-layer MoTe2 and gold

    Science.gov (United States)

    Qi, Dianyu; Wang, Qixing; Han, Cheng; Jiang, Jizhou; Zheng, Yujie; Chen, Wei; Zhang, Wenjing; Thye Shen Wee, Andrew

    2017-12-01

    Schottky barriers greatly influence the performance of optoelectronic devices. Schottky barriers can be reduced by harnessing the polymorphism of 2D metal transition dichalcogenides, since both semiconducting and metallic phases exist. However, high energy, high temperature or chemicals are normally required for phase transformation, or the processes are complex. In this work, stable low-resistance contacts between few layer MoTe2 flakes and gold electrodes are achieved by a simple thermal annealing treatment at low temperature (200-400 °C). The resulting Schottky barrier height of the annealed MoTe2/Au interface is low (~23 meV). A new Raman A g mode of the 1T‧ metallic phase of MoTe2 on gold electrode is observed, indicating that the low-resistance contact is due to the phase transition of 2H-MoTe2. The gold substrate plays an important role in the transformation, and a higher gold surface roughness increases the transformation rate. With this method, the mobility and ON-state current of the MoTe2 transistor increase by ~3-4 orders of magnitude, the photocurrent of vertically stacked graphene/MoTe2/Au device increases ~300%, and the response time decreases by ~20%.

  3. A novel nanoscaled Schottky barrier based transmission gate and its digital circuit applications

    Science.gov (United States)

    Kumar, Sunil; Loan, Sajad A.; Alamoud, Abdulrahman M.

    2017-04-01

    In this work we propose and simulate a compact nanoscaled transmission gate (TG) employing a single Schottky barrier based transistor in the transmission path and a single transistor based Sajad-Sunil-Schottky (SSS) device as an inverter. Therefore, just two transistors are employed to realize a complete transmission gate which normally consumes four transistors in the conventional technology. The transistors used to realize the transmission path and the SSS inverter in the proposed TG are the double gate Schottky barrier devices, employing stacks of two metal silicides, platinum silicide (PtSi) and erbium silicide (ErSi). It has been observed that the realization of the TG gate by the proposed technology has resulted into a compact structure, with reduced component count, junctions, interconnections and regions in comparison to the conventional technology. The further focus of this work is on the application part of the proposed technology. So for the first time, the proposed technology has been used to realize various combinational circuits, like a two input AND gate, a 2:1 multiplexer and a two input XOR circuits. It has been observed that the transistor count has got reduced by half in a TG, two input AND gate, 2:1 multiplexer and in a two input XOR gate. Therefore, a significant reduction in transistor count and area requirement can be achieved by using the proposed technology. The proposed technology can be also used to perform the compact realization of other combinational and sequential circuitry in future.

  4. Mo1-xWxSe2-Based Schottky Junction Photovoltaic Cells.

    Science.gov (United States)

    Yi, Sum-Gyun; Kim, Sung Hyun; Park, Sungjin; Oh, Donggun; Choi, Hwan Young; Lee, Nara; Choi, Young Jai; Yoo, Kyung-Hwa

    2016-12-14

    We developed Schottky junction photovoltaic cells based on multilayer Mo1-xWxSe2 with x = 0, 0.5, and 1. To generate built-in potentials, Pd and Al were used as the source and drain electrodes in a lateral structure, and Pd and graphene were used as the bottom and top electrodes in a vertical structure. These devices exhibited gate-tunable diode-like current rectification and photovoltaic responses. Mo0.5W0.5Se2 Schottky diodes with Pd and Al electrodes exhibited higher photovoltaic efficiency than MoSe2 and WSe2 devices with Pd and Al electrodes, likely because of the greater adjusted band alignment in Mo0.5W0.5Se2 devices. Furthermore, we showed that Mo0.5W0.5Se2-based vertical Schottky diodes yield a power conversion efficiency of ∼16% under 532 nm light and ∼13% under a standard air mass 1.5 spectrum, demonstrating their remarkable potential for photovoltaic applications.

  5. Schottky diode based on WS2 crossed with PEDOT/PSSA

    Science.gov (United States)

    Ortiz, Deliris; Pinto, Nicholas; Naylor, Carl; Johnson, A. T. Charlie

    An easy technique to fabricate a Schottky diode with WS2 and PEDOT-PSSA under ambient conditions is presented. WS2 is an air stable transition metal dichalcogenide semiconductor. When connected as a field effect transistor, WS2 exhibited n-type behavior with a charge mobility of ~7cm2/V-s on SiO2. PEDOT/PSSA is a conducting polymer that can be electro-spun to form fibers with a conductivity of ~1 S/cm. In this work we fabricated a Schottky diode by crossing a CVD grown monolayer WS2 crystal with a single electro-spun PEDOT/PSSA fiber. The resulting diode characteristics were analyzed assuming the standard thermionic emission model of a Schottky junction. Analysis of the results includes the ideality parameter of 4.75, diode rectification ratio ~10, and a turn on voltage of 1.4V. Efforts to investigate if these parameters are tunable with a back gate will also be presented. This work was supported by NSF-DMR-1523463 and NSF DMR RUI-1360772. ATJ acknowledges support from EFRI 2DARE EFMA-1542879.

  6. Schottky junctions studied using Korringa-Kohn-Rostoker nonequilibrium Green's function method

    Science.gov (United States)

    Akai, Hisazumi; Ogura, Masako

    A scheme that combines the non-equilibrium Green's function method with the Korringa-Kohn-Rostoker (KKR) Green's function method is proposed. The method is different from many previous attempts in that it uses the exact Green's function whose spectrum is not bound within a finite energy range, and hence, provides sound basis for quantitative discussions. The scheme is applied to the Schottky junctions composed of an Al/GaN/Al trilayer. Schottky contacts formed in metal/semiconductor junctions play an important role in semiconductor devices and integrated circuits. They have been intensively investigated for several decades not only for possible application to electronic devices but also for gaining a fundamental understanding of the Schottky barrier formation. Our results show that the Schottly barrier is formed between an undoped GaN and Al interface. The transport property of this system under various finite bias voltages is calculated. It is shown that the asymmetric behavior of electron transport against the direction of bias voltage occurs in this system, confirming the feature of rectification. The present study was partly supported by Grant-in-Aid No. 22104012, MEXT, Japan, the Alexander von Humboldt Foundation, and by the Elements Strategy Initiative Project under the auspice of MEXT, Japan.

  7. Analytical modeling of Schottky tunneling source impact ionization MOSFET with reduced breakdown voltage

    Directory of Open Access Journals (Sweden)

    Sangeeta Singh

    2016-03-01

    Full Text Available In this paper, we have investigated a novel Schottky tunneling source impact ionization MOSFET (STS-IMOS to lower the breakdown voltage of conventional impact ionization MOS (IMOS and developed an analytical model for the same. In STS-IMOS there is an accumulative effect of both impact ionization and source induced barrier tunneling. The silicide source offers very low parasitic resistance, the outcome of which is an increment in voltage drop across the intrinsic region for the same applied bias. This reduces operating voltage and hence, it exhibits a significant reduction in both breakdown and threshold voltage. STS-IMOS shows high immunity against hot electron damage. As a result of this the device reliability increases magnificently. The analytical model for impact ionization current (Iii is developed based on the integration of ionization integral (M. Similarly, to get Schottky tunneling current (ITun expression, Wentzel–Kramers–Brillouin (WKB approximation is employed. Analytical models for threshold voltage and subthreshold slope is optimized against Schottky barrier height (ϕB variation. The expression for the drain current is computed as a function of gate-to-drain bias via integral expression. It is validated by comparing it with the technology computer-aided design (TCAD simulation results as well. In essence, this analytical framework provides the physical background for better understanding of STS-IMOS and its performance estimation.

  8. The electrical characterization and response to hydrogen of Schottky diodes with a resistive metal electrode-rectifying an oversight in Schottky diode investigation

    Energy Technology Data Exchange (ETDEWEB)

    Dawson, P; Feng, L; Penate-Quesada, L [Centre for Nanostructured Media, School of Maths and Physics, Queen' s University of Belfast, Belfast BT7 1NN (United Kingdom); Hill, G [EPSRC National Centre for III-V Technologies, Mappin Street, University ofSheffield, Sheffield S1 3JD (United Kingdom); Mitra, J, E-mail: P.dawson@qub.ac.uk

    2011-03-30

    Schottky-barrier structures with a resistive metal electrode are examined using the 4-point probe method where the probes are connected to the metal electrode only. The observation of a significant decrease in resistance with increasing temperature (over a range of {approx}100 K) in the diode resistance-temperature (R{sub D}-T) characteristic is considered due to charge carrier confinement to the metal electrode at low temperature (high resistance), with the semiconductor progressively opening up as a parallel current carrying channel (low resistance) with increasing temperature due to increasing thermionic emission across the barrier. A simple model is constructed, based on thermionic emission at quasi-zero bias, that generates good fits to the experimental data. The negative differential resistance (NDR) region in the R{sub D}-T characteristic is a general effect and is demonstrated across a broad temperature range for a variety of Schottky structures grown on Si-, GaAs- and InP-substrates. In addition the NDR effect is harnessed in micro-scaled Pd/n-InP devices for the detection of low levels of hydrogen in an ambient atmosphere of nitrogen.

  9. Mokinių, turinčių nežymų intelekto sutrikimą, naudojimasis informacinėmis komunikacinėmis technologijomis

    OpenAIRE

    Sviridenkienė, Lymantė

    2016-01-01

    Magistro darbe išanalizuota ir susisteminta Lietuvos ir užsienio autorių mokslinė literatūra apie informacinių komunikacinių technologijų teikiamas galimybes, grėsmes bei jų taikymą ugdyme, apžvelgti įstatymai, deklaruojantys informacijos teikimą virtualioje erdvėje. Stebėjimo, anketinės apklausos bei interviu metodais buvo atliktas tyrimas, kurio tikslas – išnagrinėti, kokiomis informacinėmis komunikacinėmis technologijomis naudojasi mokiniai, turintys nežymų intelekto sutrikimą. Atlikta ...

  10. Tight-binding analysis of current oscillation in nanoscale In0.53Ga0.47As Schottky MOSFET

    Science.gov (United States)

    Ahangari, Zahra; Fathipour, Morteza

    2013-11-01

    A comprehensive study of band structure effect on the quantum transport of nanoscale In0.53Ga0.47As Schottky MOSFET for the implementation of III-V MOSFET with low source/drain series resistance is presented. Rigorous treatment of the full band structure in ultra-thin body MOSFET is employed using sp3d5s* tight-binding approach. Strong transverse confinement increases the energy of subbands and, indeed, the effective Schottky barrier height. Due to enhanced Schottky barriers and at low drain voltages, a double barrier gate modulated potential well is created along the channel that results in source-to-drain confinement of states. As tunnelling is the main current component in this device, longitudinal confinement induces drain current oscillation at low temperatures. Important factors that may affect current oscillation are demonstrated. Current oscillation that alters the normal performance of the device is investigated in nanowire Schottky MOSFET, as well. Additional quantum confinement in nanowire Schottky MOSFET provides higher effective Schottky barrier height than the double gate structure. Accordingly, the drain current oscillation is more apparent in nanowire Schottky MOSFET than in the double gate device and is gradually smoothed out as the gate length shrinks down in ultra-scaled structure. Effect of diffusive scattering on the quantum transport of the device is investigated, too. What is prominent in our result is that the drain current oscillations degrade as the channel mobility is decreased. The results in this paper are paving a way to elucidate the feasibility of this device in the nanoscale regime.

  11. Film, ruum ja narratiiv : "Mis juhtus Andres Lapeteusega?" ning "Viini postmark" / Eva Näripea

    Index Scriptorium Estoniae

    Näripea, Eva

    2006-01-01

    Analüüsitakse narratiivi aegruumi loomise viise juhtumi analüüsi vormis, vaadeldes kaht eesti mängufilmi : G. Kromanovi "Mis juhtus Andres Lapeteusega?" (Tallinnfilm, 1966) ja Veljo Käsperi "Viini postmark" (Tallinnfilm, 1967)

  12. Super-plus - karpi pandud äike, mis tervistab / Tõnu Kalvet

    Index Scriptorium Estoniae

    Kalvet, Tõnu

    1999-01-01

    Venemaal toodetud õhupuhastist. Õhupuhasti ei piirdu mitte ainult õhu puhastamisega, vaid küllastab õhku ka osooniga ning eluks ülioluliste negatiivsete ioonidega, mis suurendavad organismi immuunsust ja likvideerivad alalise kurnatuse sündroomi

  13. Mis tagab jõukuse püsimise? / Igor Gräzin

    Index Scriptorium Estoniae

    Gräzin, Igor, 1952-

    2004-01-01

    Autori arvates üksnes Reformierakonna kujundatud kaks valdkonda - stabiilne ja efektiivne rahapoliitika ning stimuleeriv, konkurentsivõimeline ettevõtluskeskkond - on need faktorid, mis tagavad Eestile jõukuse ka EL-is

  14. Film, ruum ja narratiiv : "Mis juhtus Andres Lapeteusega?" ning "Viini postmark" / Eva Näripea

    Index Scriptorium Estoniae

    Näripea, Eva, 1980-

    2011-01-01

    Analüüsitakse narratiivi aegruumi loomise viise juhtumi analüüsi vormis, vaadeldes kaht eesti mängufilmi : G. Kromanovi "Mis juhtus Andres Lapeteusega?" (Tallinnfilm, 1966) ja Veljo Käsperi "Viini postmark" (Tallinnfilm, 1967)

  15. Von Krahli akadeemikud küsivad, mis tuleb pärast kapitalismi

    Index Scriptorium Estoniae

    2008-01-01

    Oktoobris Von Krahli Akadeemias toimuvast neljaosalisest loengusarjast, mis otsib vastust küsimusele - kas on elu pärast kapitalismi. Küsivad ja vastavad näitlejad, kirjanikud, kunstnikud, filmitegijad Eestist ja mujalt

  16. The Role of Vitamin D Stimulation of Mullerian Inhibiting Substance (MIS) in Prostate Cancer Therapy

    Science.gov (United States)

    2008-12-01

    follicle development (15, 16, 29), ovarian and testicular function (30) and has been linked to polycystic ovarian disease ( PCOS ) (31- 34...synthesis in the knockout mice (47). Estrogen supplementation corrected the defects while maintaining normal serum calcium through a rescue diet ...addition, PCOS has also been associated with high levels of MIS (31-34). The role of calcitriol and/or the VDR in the overproduction of MIS in PCOS

  17. When Less Is More: The indications for MIS Techniques and Separation Surgery in Metastatic Spine Disease.

    Science.gov (United States)

    Zuckerman, Scott L; Laufer, Ilya; Sahgal, Arjun; Yamada, Yoshiya J; Schmidt, Meic H; Chou, Dean; Shin, John H; Kumar, Naresh; Sciubba, Daniel M

    2016-10-15

    Systematic review. The aim of this study was to review the techniques, indications, and outcomes of minimally invasive surgery (MIS) and separation surgery with subsequent radiosurgery in the treatment of patients with metastatic spine disease. The utilization of MIS techniques in patients with spine metastases is a growing area within spinal oncology. Separation surgery represents a novel paradigm where radiosurgery provides long-term control after tumor is surgically separated from the neural elements. PubMed, Embase, and CINAHL databases were systematically queried for literature reporting MIS techniques or separation surgery in patients with metastatic spine disease. PRISMA guidelines were followed. Of the initial 983 articles found, 29 met inclusion criteria. Twenty-five articles discussed MIS techniques and were grouped according to the primary objective: percutaneous stabilization (8), tubular retractors (4), mini-open approach (8), and thoracoscopy/endoscopy (5). The remaining 4 studies reported separation surgery. Indications were similar across all studies and included patients with instability, refractory pain, or neurologic compromise. Intraoperative variables, outcomes, and complications were similar in MIS studies compared to traditional approaches, and some MIS studies showed a statistically significant improvement in outcomes. Studies of mini-open techniques had the strongest evidence for superiority. Low-quality evidence currently exists for MIS techniques and separation surgery in the treatment of metastatic spine disease. Given the early promising results, the next iteration of research should include higher-quality studies with sufficient power, and will be able to provide higher-level evidence on the outcomes of MIS approaches and separation surgery. N/A.

  18. Speleothem evidence for MIS 5c and 5a sea level above modern level at Bermuda

    Science.gov (United States)

    Wainer, Karine A. I.; Rowe, Mark P.; Thomas, Alexander L.; Mason, Andrew J.; Williams, Bruce; Tamisiea, Mark E.; Williams, Felicity H.; Düsterhus, André; Henderson, Gideon M.

    2017-01-01

    The history of sea level in regions impacted by glacio-isostasy provides constraints on past ice-sheet distribution and on the characteristics of deformation of the planet in response to loading. The Western North Atlantic-Caribbean region, and Bermuda in particular, is strongly affected by the glacial forebulge that forms as a result of the Laurentide ice-sheet present during glacial periods. The timing of growth of speleothems, at elevations close to sea level can provide records of minimum relative sea level (RSL). In this study we used U-Th dating to precisely date growth periods of speleothems from Bermuda which were found close to modern-day sea level. Results suggest that RSL at this location was above modern during MIS5e, MIS5c and MIS5a. These data support controversial previous indications that Bermudian RSL was significantly higher than RSL at other locations during MIS 5c and MIS 5a. We confirm that it is possible to explain a wide range of MIS5c-a relative sea levels observed across the Western North Atlantic-Caribbean in glacial isostatic adjustment models, but only with a limited range of mantle deformation constants. This study demonstrates the particular power of Bermuda as a gauge for response of the forebulge to glacial loading, and demonstrates the potential for highstands at this location to be significantly higher than in other regions, helping to explain the high sea levels observed for Bermuda from earlier highstands.

  19. Performance analyses of Schottky diodes with Au/Pd contacts on n-ZnO thin films as UV detectors

    Science.gov (United States)

    Varma, Tarun; Periasamy, C.; Boolchandani, Dharmendar

    2017-12-01

    In this paper, we report fabrication and performance analyses of UV detectors based on ZnO thin film Schottky diodes with Au and Pd contacts. RF magnetron sputtering technique has been used to deposit the nano-crystalline ZnO thin film, at room temperature. Characterization techniques such as XRD, AFM and SEM provided valuable information related to the micro-structural & optical properties of the thin film. The results show that the prepared thin film has good crystalline orientation and minimal surface roughness, with an optical bandgap of 3.1 eV. I-V and C-V characteristics were evaluated that indicate non-linear behaviour of the diodes with rectification ratios (IF/IR) of 19 and 427, at ± 4 V, for Au/ZnO and Pd/ZnO Schottky diodes, respectively. The fabricated Schottky diodes when exposed to a UV light of 365 nm wavelength, at an applied bias of -2 V, exhibited responsivity of 10.16 and 22.7 A/W, for Au and Pd Schottky contacts, respectively. The Pd based Schottky photo-detectors were found to exhibit better performance with superior values of detectivity and photoconductive gain of 1.95 × 1010 cm Hz0.5/W & 77.18, over those obtained for the Au based detectors which were observed to be 1.23 × 1010 cm Hz0.5/W & 34.5, respectively.

  20. Epitaxial lateral overgrowth of Ga{sub x}In{sub 1-x}P toward direct Ga{sub x}In{sub 1-x}P/Si heterojunction

    Energy Technology Data Exchange (ETDEWEB)

    Omanakuttan, Giriprasanth; Stergiakis, Stamoulis; Sychugov, Ilya; Lourdudoss, Sebastian; Sun, Yan-Ting [Department of Materials and Nano Physics, School of Information and Communication Technology, Royal Institute of Technology-KTH, Kista (Sweden); Sahgal, Abhishek [Department of Materials and Nano Physics, School of Information and Communication Technology, Royal Institute of Technology-KTH, Kista (Sweden); Department of Physics, Indian Institute of Technology Delhi, New Delhi (India)

    2017-03-15

    The growth of GaInP by hydride vapor phase epitaxy (HVPE) was studied on planar GaAs, patterned GaAs for epitaxial lateral overgrowth (ELOG), and InP/Si seed templates for corrugated epitaxial lateral overgrowth (CELOG). First results on the growth of direct GaInP/Si heterojunction by CELOG is presented. The properties of Ga{sub x}In{sub (1-x)}P layer and their dependence on the process parameters were investigated by X-ray diffraction, including reciprocal lattice mapping (XRD-RLM), scanning electron microscopy equipped with energy-dispersive X-ray spectroscopy (SEM-EDS), photoluminescence (PL), and Raman spectroscopy. The fluctuation of Ga composition in the Ga{sub x}In{sub (1-x)}P layer was observed on planar substrate, and the strain caused by the composition variation is retained until relaxation occurs. Fully relaxed GaInP layers were obtained by ELOG and CELOG. Raman spectroscopy reveals that there is a certain amount of ordering in all of the layers except those grown at high temperatures. Orientation dependent Ga incorporation in the CELOG, but not in the ELOG Ga{sub x}In{sub (1-x)}P layer, and Si incorporation in the vicinity of direct Ga{sub x}In{sub (1-x)}P/Si heterojunction from CELOG are observed in the SEM-EDS analyses. The high optical quality of direct GaInP/Si heterojunction was observed by cross-sectional micro-PL mapping and the defect reduction effect of CELOG was revealed by high PL intensity in GaInP above Si. (copyright 2017 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  1. Fabrication and Characterization of n-AlGaAs/GaAs Schottky Diode for Rectenna Device Application

    Energy Technology Data Exchange (ETDEWEB)

    Parimon, Norfarariyanti; Mustafa, Farahiyah; Hashim, Abdul Manaf; Rahman, Shaharin Fadzli Abd; Rahman, Abdul Rahim Abdul [Material Innovations and Nanoelectronics Research Group, Faculty of Electrical Engineering, Universiti Teknologi Malaysia, 81310 Skudai, Johor (Malaysia); Osman, Mohd Nizam, E-mail: manaf@fke.utm.my [Telekom Research and Development, TM Innovation Centre, 63000 Cyberjaya (Malaysia)

    2011-02-15

    Schottky diode was designed and fabricated on n-AlGaAs/GaAs high electron mobility transistor (HEMT) structure for rectenna device application. Rectenna is one of the most potential devices to form the wireless power supply which is really good at converting microwaves to DC. The processing steps used in the fabrication of Schottky diode were the conventional steps used in standard GaAs processing. Current-voltage (I-V) measurements showed that the device had rectifying properties with a barrier height of 0.5468 eV for Ni/Au metallization. The fabricated Schottky diode detected RF signals and the cut-off frequency up to 20 GHz was estimated in direct injection experiments. These preliminary results will provide a breakthrough for the direct integration with antenna towards realization of rectenna device application.

  2. Temperature dependent current transport of Pd/ZnO nanowire Schottky diodes

    Science.gov (United States)

    Gayen, R. N.; Bhattacharyya, S. R.; Jana, P.

    2014-09-01

    Zinc oxide (ZnO) nanowire based Schottky barrier diodes are fabricated by depositing Pd metal contact on top of vertically well-aligned ZnO nanowire arrays. A vertical array of ZnO nanowires on indium tin oxide (ITO) coated glass substrates is synthesized by hybrid wet chemical route. Scanning electron microscopy (SEM), x-ray diffraction (XRD) and x-ray photoelectron spectroscopy (XPS) measurement confirm the formation of stoichiometric well-aligned hexagonal (h-ZnO) nanowire arrays with wurtzite structure. Temperature dependent current-voltage (I-V) measurements on palladium-ZnO (Pd/ZnO) nanowire Schottky junctions in the temperature range 303-383 K exhibit excellent rectifying character. From these nonlinear I-V plots, different electrical parameters of diode-like reverse saturation current, barrier height and ideality factor are determined as a function of temperature assuming pure thermionic emission model. The ideality factor is found to decrease while the barrier height increases with the increase in temperature. The series resistance values calculated from Cheung’s functions also show temperature dependency. Such behavior can be attributed to the presence of defects that traps carriers, and barrier height inhomogeneity at the interface of the barrier junction. After barrier height inhomogeneity correction, considering a Gaussian distributed barrier height fluctuation across the Pd/ZnO interface, the estimated values of mean barrier height and modified Richardson constant are more closely matched to the theoretically predicted value for Pd/ZnO Schottky barrier diodes. The variation of density of interface states as a function of interface state energy is also calculated.

  3. Investigation of the electrical parameters of Ag/p-TlGaSeS/C Schottky contacts

    Energy Technology Data Exchange (ETDEWEB)

    Qasrawi, A.F., E-mail: aqasrawi@atilim.edu.tr [Group of Physics, Faculty of Engineering, Atilim University, 06836 Ankara (Turkey); Department of Physics, Arab-American University, Jenin, West Bank, Palestine (Country Unknown); Gasanly, N.M. [Department of Physics, Middle East Technical University, 06800 Ankara (Turkey)

    2012-07-25

    Highlights: Black-Right-Pointing-Pointer Ag/p-TlGaSeS/C Schottky devices are designed and characterized. Black-Right-Pointing-Pointer The device ideality factor and barrier heights are 1.2 and 0.74 eV, respectively. Black-Right-Pointing-Pointer It displayed wide and narrow RF bands at 13.200 and 62.517 kHz, respectively. Black-Right-Pointing-Pointer The relative Q values are found to be 1.4 and of 6.3 Multiplication-Sign 10{sup 4}, respectively. - Abstract: p-type TlGaSeS single crystal was used to fabricate a Schottky device. Silver and carbon metals were used as the Ohmic and Schottky contacts, respectively. The device which displayed wide RF band at 13.200 and narrow band at 62.517 kHz with Q value of 1.4 and of 6.3 Multiplication-Sign 10{sup 4}, respectively, is characterized by means of current (I)-voltage (V), capacitance (C)-voltage characteristics as well as capacitance-frequency (f) characteristics. The device series resistance, ideality factor and barrier height are determined from the I-V curve as 35.8 M{Omega}, 1.2 and 0.74 eV, respectively. The apparent acceptor density and the build in voltage of the device increased with increasing ac signal frequency. The high Q value, observed at 62.517 kHz, indicated a much lower rate of energy loss relative to the stored energy of the device. The energy loss (Q{sup -1}) is much less than 0.001% of the stored value. The device was tested and found to remain at the same mode of resonance for several hours. It never switched or ceased unless it was tuned off.

  4. Improved designs of Si-based quantum wells and Schottky diodes for IR detection

    Energy Technology Data Exchange (ETDEWEB)

    Moeen, M., E-mail: moeen@kth.se [School of Information and Communication Technology, KTH Royal Institute of Technology, Stockholm, 16640, Kista (Sweden); Kolahdouz, M. [School of Electrical and Computer Engineering, University of Tehran, Tehran (Iran, Islamic Republic of); Salemi, A.; Abedin, A.; Östling, M. [School of Information and Communication Technology, KTH Royal Institute of Technology, Stockholm, 16640, Kista (Sweden); Radamson, H.H., E-mail: rad@kth.se [School of Information and Communication Technology, KTH Royal Institute of Technology, Stockholm, 16640, Kista (Sweden)

    2016-08-31

    Novel structures of intrinsic or carbon-doped multi quantum wells (MQWs) and intrinsic or carbon-doped Si Schottky diodes (SD), individually or in combination, have been manufactured to detect the infrared (IR) radiation. The carbon concentration in the structures was 5 × 10{sup 20} cm{sup −3} and the MQWs are located in the active part of the IR detector. A Schottky diode was designed and formed as one of the contacts (based on NiSi(C)/TiW) to MQWs where on the other side the structure had an Ohmic contact. The thermal response of the detectors is expressed in terms of temperature coefficient of resistance (TCR) and the quality of the electrical signal is quantified by the signal-to-noise ratio. The noise measurements provide the K{sub 1/f} parameter which is obtained from the power spectrum density. An excellent value of TCR = − 6%/K and K{sub 1/f} = 4.7 × 10{sup −14} was measured for the detectors which consist of the MQWs in series with the SD. These outstanding electrical results indicate a good opportunity to manufacture low cost Si-based IR detectors in the near future. - Highlights: • SiGe (C)/Si(C) multi quantum wells (MQWs) are evaluated to detect IR radiation. • Schottky diodes (SDs), individually or in series with MQWs are also fabricated. • Detectors consisted of MQWs in series with SD show excellent thermal sensing. • The noise values are also extremely low for MQWs in series with SD.

  5. 670 GHz Schottky Diode Based Subharmonic Mixer with CPW Circuits and 70 GHz IF

    Science.gov (United States)

    Chattopadhyay, Goutam (Inventor); Schlecht, Erich T. (Inventor); Lee, Choonsup (Inventor); Lin, Robert H. (Inventor); Gill, John J. (Inventor); Sin, Seth (Inventor); Mehdi, Imran (Inventor)

    2014-01-01

    A coplanar waveguide (CPW) based subharmonic mixer working at 670 GHz using GaAs Schottky diodes. One example of the mixer has a LO input, an RF input and an IF output. Another possible mixer has a LO input, and IF input and an RF output. Each input or output is connected to a coplanar waveguide with a matching network. A pair of antiparallel diodes provides a signal at twice the LO frequency, which is then mixed with a second signal to provide signals having sum and difference frequencies. The output signal of interest is received after passing through a bandpass filter tuned to the frequency range of interest.

  6. Analysis of Heavy Ion Irradiation Induced Thermal Damage in SiC Schottky Diodes

    Science.gov (United States)

    Abbate, C.; Busatto, G.; Cova, P.; Delmonte, N.; Giuliani, F.; Iannuzzo, F.; Sanseverino, A.; Velardi, F.

    2015-02-01

    A study is presented aimed at describing phenomena involved in Single Event Burnout induced by heavy ion irradiation in SiC Schottky diodes. On the basis of experimental data obtained for 79Br irradiation at different energies, electro-thermal FEM is used to demonstrate that the failure is caused by a strong local increase of the semiconductor temperature. With respect to previous studies the temperature dependent thermal material properties were added. The critical ion energy calculated by this model is in agreement with literature experimental results. The substrate doping dependence of the SEE robustness was analyzed, proving the effectiveness of the developed model for device technological improvements.

  7. Schottky barrier enhancement on n-InP solar cell applications

    DEFF Research Database (Denmark)

    Clausen, Thomas; Leistiko, Otto

    1994-01-01

    It is demonstrated that the Schottky barrier height on n-type InP can be enhanced to values close to the energy bandgap (1.35 eV) by employing a AuZnCr metallization. The process is simple and requires only mild and fast annealing sequences with temperatures not exceeding 500°C. Also, no critical...... epitaxial growth step of junctions is needed, making the process fairly cheap. Thus, prospects for an efficient and simple solar cell device structure for space application purposes based on highly radiant-resistant InP are greatly improved...

  8. Theory of warm ionized gases: equation of state and kinetic Schottky anomaly.

    Science.gov (United States)

    Capolupo, A; Giampaolo, S M; Illuminati, F

    2013-10-01

    Based on accurate Lennard-Jones-type interaction potentials, we derive a closed set of state equations for the description of warm atomic gases in the presence of ionization processes. The specific heat is predicted to exhibit peaks in correspondence to single and multiple ionizations. Such kinetic analog in atomic gases of the Schottky anomaly in solids is enhanced at intermediate and low atomic densities. The case of adiabatic compression of noble gases is analyzed in detail and the implications on sonoluminescence are discussed. In particular, the predicted plasma electron density in a sonoluminescent bubble turns out to be in good agreement with the value measured in recent experiments.

  9. Catalytic-Metal/PdO(sub x)/SiC Schottky-Diode Gas Sensors

    Science.gov (United States)

    Hunter, Gary W.; Xu, Jennifer C.; Lukco, Dorothy

    2006-01-01

    Miniaturized hydrogen- and hydrocarbon-gas sensors, heretofore often consisting of Schottky diodes based on catalytic metal in contact with SiC, can be improved by incorporating palladium oxide (PdOx, where 0 less than or equal to x less than or equal to 1) between the catalytic metal and the SiC. In prior such sensors in which the catalytic metal was the alloy PdCr, diffusion and the consequent formation of oxides and silicides of Pd and Cr during operation at high temperature were observed to cause loss of sensitivity. However, it was also observed that any PdOx layers that formed and remained at PdCr/SiC interfaces acted as barriers to diffusion, preventing further deterioration by preventing the subsequent formation of metal silicides. In the present improvement, the lesson learned from these observations is applied by placing PdOx at the catalytic metal/SiC interfaces in a controlled and uniform manner to form stable diffusion barriers that prevent formation of metal silicides. A major advantage of PdOx over other candidate diffusion-barrier materials is that PdOx is a highly stable oxide that can be incorporated into gas sensor structures by use of deposition techniques that are standard in the semiconductor industry. The PdOx layer can be used in a gas sensor structure for improved sensor stability, while maintaining sensitivity. For example, in proof-of-concept experiments, Pt/PdOx/SiC Schottky-diode gas sensors were fabricated and tested. The fabrication process included controlled sputter deposition of PdOx to a thickness of 50 Angstroms on a 400-m-thick SiC substrate, followed by deposition of Pt to a thickness of 450 Angstroms on the PdOx. The SiC substrate (400 microns in thickness) was patterned with photoresist and a Schottky-diode photomask. A lift-off process completed the definition of the Schottky-diode pattern. The sensors were tested by measuring changes in forward currents at a bias potential of 1 V during exposure to H2 in N2 at temperatures

  10. High performance trench MOS barrier Schottky diode with high-k gate oxide

    Science.gov (United States)

    Zhai, Dong-Yuan; Zhu, Jun; Zhao, Yi; Cai, Yin-Fei; Shi, Yi; Zheng, You-Liao

    2015-07-01

    A novel trench MOS barrier Schottky diode (TMBS) device with a high-k material introduced into the gate insulator is reported, which is named high-k TMBS. By simulation with Medici, it is found that the high-k TMBS can have 19.8% lower leakage current while maintaining the same breakdown voltage and forward turn-on voltage compared with the conventional regular trench TMBS. Project supported by the National Basic Research Program of China (Grant No. 2011CBA00607), the National Natural Science Foundation of China (Grant Nos. 61106089 and 61376097), and the Zhejiang Provincial Natural Science Foundation of China (Grant No. LR14F040001).

  11. Microwave Schottky diagnostic systems for the Fermilab Tevatron, Recycler, and CERN LHC

    CERN Document Server

    Pasquinelli, Ralph J

    2011-01-01

    A means for non-invasive measurement of transverse and longitudinal characteristics of bunched beams in synchrotrons has been developed based on high sensitivity slotted waveguide pickups. The pickups allow for bandwidths exceeding hundreds of MHz while maintaining good beam sensitivity characteristics. Wide bandwidth is essential to allow bunch-by-bunch measurements by means of a fast gate. The Schottky detector system is installed and successfully commissioned in the Fermilab Tevatron, Recycler and CERN LHC synchrotrons. Measurement capabilities include tune, chromaticity, and momentum spread of single or multiple beam bunches in any combination. With appropriate calibrations, emittance can also be measured by integrating the area under the incoherent tune sidebands.

  12. Plasmonic silicon Schottky photodetectors: the physics behind graphene enhanced internal photoemission

    DEFF Research Database (Denmark)

    Levy, Uriel; Grajower, Meir; Gonçalves, P. A. D.

    2017-01-01

    a physical model where surface plasmon polaritons enhance the absorption in a single-layer graphene by enhancing the field along the interface. The relatively long relaxation time in graphene allows for multiple attempts for the carrier to overcome the Schottky barrier and penetrate into the semiconductor......Recent experiments have shown that the plasmonic assisted internal photoemission from a metal to silicon can be significantly enhanced by introducing a monolayer of graphene between the two media. This is despite the limited absorption in a monolayer of undoped graphene (∼πα=2.3%). Here we propose...

  13. Surface plasma-enhanced internal photoemission in gallium arsenide Schottky diodes.

    Science.gov (United States)

    Torosian, K M; Karakashian, A S; Teng, Y Y

    1987-07-01

    An aluminum on n-type gallium arsenide Schottky diode with a prism coupler on the front face was illuminated by a p-polarized Nd:YAG laser to excite the surface plasma resonance in the aluminum barrier contact. The internal photoemission current and reflectance were measured simultaneously as a function of the angle of incidence. The excitation of the surface plasma resonance was observed by a dip in the reflectance which occurred at the same angle as a peak in the photoemission current. These effects disappeared in the case of s-polarization. Enhancement in the photoemission current by as much as a factor of 3 was obtained.

  14. Anomalous Schottky Specific Heat and Structural Distortion in Ferromagnetic PrAl2

    Science.gov (United States)

    Pathak, Arjun K.; Paudyal, D.; Mudryk, Y.; Gschneidner, K. A., Jr.; Pecharsky, V. K.

    2013-05-01

    Unique from other rare earth dialuminides, PrAl2 undergoes a cubic to tetragonal distortion below T=30K in a zero magnetic field, but the system recovers its cubic symmetry upon the application of an external magnetic field of 10 kOe via a lifting of the 4f crystal field splitting. The nuclear Schottky specific heat in PrAl2 is anomalously high compared to that of pure Pr metal. First principles calculations reveal that the 4f crystal field splitting in the tetragonally distorted phase of PrAl2 underpins the observed unusual low temperature phenomena.

  15. Microwave Schottky diagnostic systems for the Fermilab Tevatron, Recycler, and CERN Large Hadron Collider

    Directory of Open Access Journals (Sweden)

    Ralph J. Pasquinelli

    2011-07-01

    Full Text Available A means for noninvasive measurement of transverse and longitudinal characteristics of bunched beams in synchrotrons has been developed based on high sensitivity slotted waveguide pickups. The pickups allow for bandwidths exceeding hundreds of MHz while maintaining good beam sensitivity characteristics. Wide bandwidth is essential to allow bunch-by-bunch measurements by means of a fast gate. The Schottky detector system is installed and successfully commissioned in the Fermilab Tevatron, Recycler and CERN LHC synchrotrons. Measurement capabilities include tune, chromaticity, and momentum spread of single or multiple beam bunches in any combination. With appropriate calibrations, emittance can also be measured by integrating the area under the incoherent tune sidebands.

  16. Electrical characteristics and interfacial reactions of rapidly annealed Pt/Ru Schottky contacts on n-type GaN

    Energy Technology Data Exchange (ETDEWEB)

    Reddy, N.N.K.; Rajagopal Reddy, V. [Department of Physics, Sri Venkateswara University, Tirupati (India); Choi, C.J. [School of Semiconductor and Chemical Engineering, Semiconductor Physics Research Center (SPRC), Chonbuk National University, Jeonju (Korea, Republic of)

    2011-07-15

    The electrical properties and interfacial reactions of Pt/Ru Schottky contacts on n-type gallium nitride (GaN) have been investigated as a function of annealing temperature. The calculated Schottky barrier height (SBH) of the as-deposited Pt/Ru Schottky contact is found to be 0.69 eV current-voltage (I-V) and 0.76 eV capacitance-voltage (C-V). Experimental results showed that the SBHs are increased on increasing the annealing temperature. When the contact is annealed at 600 C, a maximum barrier height is obtained and the corresponding values are 0.87 eV (I-V) and 0.99 eV (C-V). The Norde method was also employed to extract the barrier height of Pt/Ru Schottky contacts and the values are 0.70 and 0.86 eV for the samples as-deposited and annealed at 600 C, which are in good agreement with those obtained from the I-V measurement. Shifts of the surface Fermi level are measured with the change in position of the Ga 2p core level peak. Based on the X-ray photoelectron spectroscopy (XPS) and X-ray diffraction (XRD) studies, the formation of gallide phases at the Ru/Pt/n-GaN interface could be the reason for the increase in SBH at elevated temperatures. Atomic force microscopy (AFM) results showed that the surface morphology of the Pt/Ru Schottky contact did not change significantly even after annealing at 600 C. These results point out that a Pt/Ru Schottky contact may be a suitable candidate for the fabrication of GaN-based high-temperature device applications. (Copyright copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  17. A Microscopic Information System (MIS) to assist in petrographic analysis

    Science.gov (United States)

    Tarquini, S.; Favalli, M.

    2009-04-01

    Rock texture results from all the petrological processes that have affected the rock system. The interpretation of a rock texture relies on the analysis of the morphometric parameters of the constituting components (e.g. crystals or grains). A consistent and statistically sound quantification of components size and shape is crucial to adequately unravel the petrology of a rock, but the gathering of these measurements may be time-consuming or difficult to achieve using low-cost facilities. The basic technique for texture analysis of rocks is the observation of thin sections in transmitted light by using a petrographic microscope. To automate and speed-up textural measurements from thin section in transmitted light, several image processing procedures have been published in the last two decades. Nevertheless, the complexity of the optical properties of crystals hampered the determination of a method that is completely satisfactory, especially for complex polymineralic plutonic rocks. This work provides a contribution to solve this problem. We present a novel composite procedure based on four approaches: i) the use of a slide scanner to acquire the input imagery in transmitted light from thin sections without using the petrographic microscope; ii) the storage of the resulting images in a GIS-like database structure that is extremely useful to retrieve, browse and analyze a large archive of images from a high number of thin sections; iii) the application of a custom image analysis procedure based on two region growing functions; iv) the refinement of the regions after raster to vector conversion using GIS software. We call the obtained analysis system a Microscopic Information System (MIS), because it relies on GIS software but it is not a geographic system. In this study we apply this technique to analyze 137 thin sections obtained from 49 samples of 8 different granitoid rocks that are commonly used in the decorative stone industry. For each thin section 5 collimated

  18. Barrier height determination on Schottky contacts formed at the back contact-semiconductor interface of degraded solar cells

    Science.gov (United States)

    Misiakos, K.; Lathrop, J. W.

    1984-01-01

    A method is described of determining an equivalent circuit for solar cells which have degraded as a result of the formation of a rectifying Schottky barrier at the back contact. An excellent fit of experimental data has been achieved using SCEPTRE with an equivalent circuit derived from the shape of the measured current voltage characteristics. One key parameter of the Schottky barrier diode, the reverse saturation current, can be used to determine the barrier potential. The barrier potential increases as the cell is stressed with 0.5 volts being a typical experimentally determined value for a degraded cell.

  19. Mg doping of InGaN layers grown by PA-MBE for the fabrication of Schottky barrier photodiodes

    OpenAIRE

    Pereiro, J. (James); Redondo-Cubero, A; Fernandez-Garrido, S.; Rivera, C; Navarro, A.; Muñoz, E; Calleja, E; Gago, R.; Pereiro, Juan

    2010-01-01

    ABSTRACT This work reports on the fabrication of Schottky barrier based Mg-doped (In, Ga)N layers for fluorescence applications. Mg acceptors are used in order to compensate surface and bulk donors that prevent the fabrication of Schottky contacts on unintentionally doped (In, Ga)N layers. Rectifying properties of the contacts exhibited a major improvement when (In, Ga)N:Mg is used. The electrical and optical measurements of the layers showed a hole concentration up to 3?10 19 holes/cm 3 w...

  20. Electric Field Penetration in Au/Nb:SrTiO3 Schottky Junctions Probed by Bias-Dependent Internal Photoemission

    Energy Technology Data Exchange (ETDEWEB)

    Hikita, Y.

    2011-08-15

    Electric field penetration into the metallic side of a Schottky junction is in principle a universal phenomenon, the magnitude of which increases with the semiconductor permittivity. Here, we quantitatively probe this effect using bias-dependent internal photoemission spectroscopy at the Schottky junction between a large dielectric permittivity semiconductor SrTiO{sub 3} and gold. A clear linear reduction of the barrier height with increasing interface electric field was observed, highlighting the importance of field penetration into the gold. The interfacial permittivity of SrTiO{sub 3} at the interface is reduced from the bulk value, reflecting intrinsic suppression at the interface.

  1. Transparent indium-tin oxide/indium-gallium-zinc oxide Schottky diodes formed by gradient oxygen doping

    Science.gov (United States)

    Ho, Szuheng; Yu, Hyeonggeun; So, Franky

    2017-11-01

    Amorphous InGaZnO (a-IGZO) is promising for transparent electronics due to its high carrier mobility and optical transparency. However, most metal/a-IGZO junctions are ohmic due to the Fermi-level pinning at the interface, restricting their device applications. Here, we report that indium-tin oxide/a-IGZO Schottky diodes can be formed by gradient oxygen doping in the a-IGZO layer that would otherwise form an ohmic contact. Making use of back-to-back a-IGZO Schottky junctions, a transparent IGZO permeable metal-base transistor is also demonstrated with a high common-base gain.

  2. Evaluation of Polarization Effects of e(-) Collection Schottky CdTe Medipix3RX Hybrid Pixel Detector

    OpenAIRE

    Astromskas, V; Gimenez, EN; Lohstroh, A; Tartoni, N

    2016-01-01

    This paper focuses on the evaluation of operational conditions such as temperature, exposure time and flux on the polarization of a Schottky electron collection CdTe detector. A Schottky e- collection CdTe Medipix3RX hybrid pixel detector was developed as a part of the CALIPSO-HIZPAD2 EU project. The 128 ×128 pixel matrix and 0.75 mm thick CdTe sensor bump-bonded to Medipix3RX readout chips enabled the study of the polarization effects. Single and quad module Medipix3RX chips were used which ...

  3. A study of lateral Schottky contacts in WSe2 and MoS2 field effect transistors using scanning photocurrent microscopy

    Science.gov (United States)

    Yi, Ya; Wu, Changming; Liu, Hongchao; Zeng, Jiali; He, Hongtao; Wang, Jiannong

    2015-09-01

    Schottky contacts, formed at metal/semiconductor interfaces, always have a large impact on the performance of field-effect transistors (FETs). Here, we report the experimental studies of Schottky contacts in two-dimensional (2D) transition metal dichalcogenide (TMDC) FET devices. We use scanning photocurrent microscopy (SPCM) to directly probe the spatial distribution of the in-plane lateral Schottky depletion regions at the metal/2D-TMDC interfaces. The laser incident position dependent and the gate voltage tunable polarity and magnitude of the short-circuit photocurrent reveal the existence of the in-plane Schottky depletion region laterally extending away from the metal contact edges along the channel. This lateral depletion region length is estimated to be around several microns and can be effectively tuned by the gate and drain-source biases. Our results solidify the importance of lateral Schottky depletion regions in the photoresponse of 2D TMDC optoelectronic devices.Schottky contacts, formed at metal/semiconductor interfaces, always have a large impact on the performance of field-effect transistors (FETs). Here, we report the experimental studies of Schottky contacts in two-dimensional (2D) transition metal dichalcogenide (TMDC) FET devices. We use scanning photocurrent microscopy (SPCM) to directly probe the spatial distribution of the in-plane lateral Schottky depletion regions at the metal/2D-TMDC interfaces. The laser incident position dependent and the gate voltage tunable polarity and magnitude of the short-circuit photocurrent reveal the existence of the in-plane Schottky depletion region laterally extending away from the metal contact edges along the channel. This lateral depletion region length is estimated to be around several microns and can be effectively tuned by the gate and drain-source biases. Our results solidify the importance of lateral Schottky depletion regions in the photoresponse of 2D TMDC optoelectronic devices. Electronic

  4. A multi-proxy record of MIS 11-12 deglaciation and glacial MIS 12 instability from the Sulmona basin (central Italy)

    Science.gov (United States)

    Regattieri, Eleonora; Giaccio, Biagio; Galli, Paolo; Nomade, Sebastien; Peronace, Edoardo; Messina, Paolo; Sposato, Andrea; Boschi, Chiara; Gemelli, Maurizio

    2016-01-01

    A multi-proxy record (lithology, XRF, CaCO3 content, carbonate δ18O and δ13C) was acquired from a sediment core drilled in the intermountain Sulmona basin (central Italy). Tephrostratigraphic analyses of three volcanic ash layers ascribe the investigated succession to the MIS 12-MIS 11 period, spanning the interval ca. 500-410 ka. Litho-pedo facies assemblage indicates predominant lacustrine deposition, interrupted by a minor sub-aerial and lake low stand episode. Variations in major and minor elements concentrations are related to changes in the clastic input to the lake. The oxygen isotopic composition of carbonate (δ18Oc) intervals is interpreted mainly as a proxy for the amount of precipitation in the high-altitude catchment of the karst recharge system. The record shows pronounced hydrological variability at orbital and millennial time-scales, which appears closely related to the Northern Hemisphere summer insolation pattern and replicates North Atlantic and west Mediterranean Sea Surface Temperature (SST) fluctuations. The MIS 12 glacial inception is marked by an abrupt reduction of precipitation, lowering of the lake level and enhanced catchment erosion. A well-defined and isotopically prominent interstadial with increased precipitation maybe related to insolation maxima-precession minima at ca. 465 ka. This interstadial ends abruptly at ca. 457 ka and it is followed by a phase of strong short-term instability. Drastic lake-level lowering and enhanced clastic flux characterized the MIS 12 glacial maximum. Lacustrine deposition restarted about 440 ka ago. The MIS 12-MIS 11 transition is characterized by a rapid increase in the precipitation, lake-level rise and reduction in the clastic input, interrupted by a short and abrupt return to drier conditions. Comparison with marine records from the Iberian margin and western Mediterranean suggests that major events of ice rafted debris deposition, related to southward migrations of the polar front, match the

  5. A structured strategy to combine education for advanced MIS training in surgical oncology training programs.

    Science.gov (United States)

    Brar, S S; Wright, F; Okrainec, A; Smith, A J

    2011-09-01

    Changing realities in surgery and surgical technique have heightened the need for agile adaptation in training programs. Current guidelines reflect the growing acceptance and adoption of the use of minimally invasive surgery (MIS) in oncology. North American general surgery residents are often not adequately skilled in advanced laparoscopic surgery skills at the completion of their residency. Presently, advanced laparoscopic surgery training during surgical oncology fellowship training occurs on an ad-hoc basis in many surgical oncology programs. We present a rational and template for a structured training in advanced minimally invasive surgical techniques during surgical oncology fellowship training. The structure of the program seeks to incorporate evidence-based strategies in MIS training from a comprehensive review of the literature, while maintaining essential elements of rigorous surgical oncology training. Fellows in this stream will train and certify in the Fundamentals of Laparoscopic Surgery (FLS) course. Fellows will participate in the didactic oncology seminar series continuously throughout the 27 months training period. Fellows will complete one full year of dedicated MIS training, followed by 15 months of surgical oncology training. Minimal standards for case volume will be expected for MIS cases and training will be tailored to meet the career goals of the fellows. We propose that a formalized MIS-Surgical Oncology Fellowship will allow trainees to benefit from an effective training curriculum and furthermore, that will allow for graduates to lead in a cancer surgery milieu increasingly focused on minimally invasive approaches. Copyright © 2011 Elsevier Ltd. All rights reserved.

  6. Broadband photodetector based on carbon nanotube thin film/single layer graphene Schottky junction

    Science.gov (United States)

    Zhang, Teng-Fei; Li, Zhi-Peng; Wang, Jiu-Zhen; Kong, Wei-Yu; Wu, Guo-An; Zheng, Yu-Zhen; Zhao, Yuan-Wei; Yao, En-Xu; Zhuang, Nai-Xi; Luo, Lin-Bao

    2016-12-01

    In this study, we present a broadband nano-photodetector based on single-layer graphene (SLG)-carbon nanotube thin film (CNTF) Schottky junction. It was found that the as-fabricated device exhibited obvious sensitivity to a wide range of illumination, with peak sensitivity at 600 and 920 nm. In addition, the SLG-CNTF device had a fast response speed (τr = 68 μs, τf = 78 μs) and good reproducibility in a wide range of switching frequencies (50-5400 Hz). The on-off ratio, responsivity, and detectivity of the device were estimated to be 1 × 102, 209 mAW-1 and 4.87 × 1010 cm Hz1/2 W-1, respectively. What is more, other device parameters including linear performance θ and linear dynamic range (LDR) were calculated to be 0.99 and 58.8 dB, respectively, which were relatively better than other carbon nanotube based devices. The totality of the above study signifies that the present SLG-CNTF Schottky junction broadband nano-photodetector may have promising application in future nano-optoelectronic devices and systems.

  7. New type of Schottky diode-based Cu-Al-Mn-Cr shape memory material films

    Science.gov (United States)

    Aksu Canbay, C.; Dere, A.; Mensah-Darkwa, Kwadwo; Al-Ghamdi, Ahmed; Karagoz Genç, Z.; Gupta, R. K.; Yakuphanoglu, F.

    2016-07-01

    Cr-doped CuAlMn shape memory alloys were produced by arc melting method. The effects of Cr content on microstructure and transformation parameters of were investigated. The alloys were characterized by X-ray analysis, optical microscope observations and differential scanning calorimetry measurements. The grain size of the alloys was decreased by the addition of Cr into CuAlMn alloy system. The martensite transformation temperature was shifted both the lower temperature and higher temperature with the addition of chromium. This change was explained on the basis of the change in the thermodynamics such as enthalpy, entropy and activation energy values. The obtained results indicate that the phase transformation temperatures of the CuAlMn alloy system can be controlled by addition of Cr. We fabricated a Schottky barrier diode and observed that ideality factor and barrier height increase with increasing temperature. The diodes exhibited a thermal sensor behavior. This indicates that Schottky diode-based Cu-Al-Mn-Cr shape memory material films can be used as a sensor in high-temperature measurement applications.

  8. Temperature dependent electrical characterization of organic Schottky diode based on thick MgPc films

    Science.gov (United States)

    Singh, J.; Sharma, R. K.; Sule, U. S.; Goutam, U. K.; Gupta, Jagannath; Gadkari, S. C.

    2017-07-01

    Magnesium phthalocyanine (MgPc) based Schottky diode on indium tin oxide (ITO) substrate was fabricated by thermal evaporation method. The dark current voltage characteristics of the prepared ITO-MgPc-Al heterojunction Schottky diode were measured at different temperatures. The diode showed the non-ideal rectification behavior under forward and reverse bias conditions with a rectification ratio (RR) of 56 at  ±1 V at room temperature. Under forward bias, thermionic emission and space charge limited conduction (SCLC) were found to be the dominant conduction mechanisms at low (below 0.6 V) and high voltages (above 0.6 V) respectively. Under reverse bias conditions, Poole-Frenkel (field assisted thermal detrapping of carriers) was the dominant conduction mechanism. Three different approaches namely, I-V plots, Norde and Cheung methods were used to determine the diode parameters including ideality factor (n), barrier height (Φb), series resistance (R s) and were compared. SCLC mechanism showed that the trap concentration is 5.52  ×  1022 m-3 and it lies at 0.46 eV above the valence band edge.

  9. Analysis of current transport properties in nonpolar a-plane ZnO-based Schottky diodes

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Hogyoung [Seoul National University of Science and Technology, Seoul (Korea, Republic of); Kim, Haeri; Kim, Dongwook [Ewha Womans University, Seoul (Korea, Republic of)

    2014-09-15

    Using current-voltage (I - V) measurements, we investigated the temperature-dependent transport properties in Ag/nonpolar a-plane ZnO Schottky diodes. The bias-dependent ideality factors were altered by the different temperatures and showed a hump at lower temperatures. The series resistance of the diode depended on the temperatures, which was related to the number of free carriers contributing to the series resistance. For high forward bias, the slope m obtained from the lnI - lnV curves decreased with increasing temperature, assuring the space-charge-limited-current (SCLC) model controlled by an exponential distribution of traps. The reverse-biased current transport was associated with the Schottky effect, with a thermally-assisted tunneling for lower voltages and the Poole-Frenkel effect for higher voltages. The density of localized states (N{sub t}) was obtained by applying the theory of SCLC transport, which yielded a N{sub t} value of 8.32 x 10{sup 11} eV{sup -1}cm{sup -3}.

  10. Modeling and fabrication of 4H-SiC Schottky junction

    Science.gov (United States)

    Martychowiec, A.; Pedryc, A.; Kociubiński, A.

    2017-08-01

    The rapidly growing demand for electronic devices requires using of alternative semiconductor materials, which could replace conventional silicon. Silicon carbide has been proposed for these harsh environment applications (high temperature, high voltage, high power conditions) because of its wide bandgap, its high temperature operation ability, its excellent thermal and chemical stability, and its high breakdown electric field strength. The Schottky barrier diode (SBD) is known as one of the best refined SiC devices. This paper presents prepared model, simulations and description of technology of 4H-SiC Schottky junction as well as characterization of fabricated structures. The future aim of the application of the structures is an optical detection of an ultraviolet radiation. The model section contains a comparison of two different solutions of SBD's construction. Simulations - as a crucial process of designing electronic devices - have been performed using the ATLAS device of Silvaco TCAD software. As a final result the paper shows I-V characteristics of fabricated diodes.

  11. Waveguide based compact silicon Schottky photodetector with enhanced responsivity in the telecom spectral band.

    Science.gov (United States)

    Goykhman, Ilya; Desiatov, Boris; Khurgin, Jacob; Shappir, Joseph; Levy, Uriel

    2012-12-17

    We experimentally demonstrate an on-chip compact and simple to fabricate silicon Schottky photodetector for telecom wavelengths operating on the basis of internal photoemission process. The device is realized using CMOS compatible approach of local-oxidation of silicon, which enables the realization of the photodetector and low-loss bus photonic waveguide at the same fabrication step. The photodetector demonstrates enhanced internal responsivity of 12.5mA/W for operation wavelength of 1.55µm corresponding to an internal quantum efficiency of 1%, about two orders of magnitude higher than our previously demonstrated results [22]. We attribute this improved detection efficiency to the presence of surface roughness at the boundary between the materials forming the Schottky contact. The combination of enhanced quantum efficiency together with a simple fabrication process provides a promising platform for the realization of all silicon photodetectors and their integration with other nanophotonic and nanoplasmonic structures towards the construction of monolithic silicon opto-electronic circuitry on-chip.

  12. Locally oxidized silicon surface-plasmon Schottky detector for telecom regime.

    Science.gov (United States)

    Goykhman, Ilya; Desiatov, Boris; Khurgin, Jacob; Shappir, Joseph; Levy, Uriel

    2011-06-08

    We experimentally demonstrate an on-chip nanoscale silicon surface-plasmon Schottky photodetector based on internal photoemission process and operating at telecom wavelengths. The device is fabricated using a self-aligned approach of local-oxidation of silicon (LOCOS) on silicon on insulator substrate, which provides compatibility with standard complementary metal-oxide semiconductor technology and enables the realization of the photodetector and low-loss bus photonic waveguide at the same fabrication step. Additionally, LOCOS technique allows avoiding lateral misalignment between the silicon surface and the metal layer to form a nanoscale Schottky contact. The fabricated devices showed enhanced detection capability for shorter wavelengths that is attributed to increased probability of the internal photoemission process. We found the responsivity of the nanodetector to be 0.25 and 13.3 mA/W for incident optical wavelengths of 1.55 and 1.31 μm, respectively. The presented device can be integrated with other nanophotonic and nanoplasmonic structures for the realization of monolithic opto-electronic circuitry on-chip.

  13. Phase-Defined van der Waals Schottky Junctions with Significantly Enhanced Thermoelectric Properties.

    Science.gov (United States)

    Wang, Qiaoming; Yang, Liangliang; Zhou, Shengwen; Ye, Xianjun; Wang, Zhe; Zhu, Wenguang; McCluskey, Matthew D; Gu, Yi

    2017-07-06

    We demonstrate a van der Waals Schottky junction defined by crystalline phases of multilayer In 2 Se 3 . Besides ideal diode behaviors and the gate-tunable current rectification, the thermoelectric power is significantly enhanced in these junctions by more than three orders of magnitude compared with single-phase multilayer In 2 Se 3 , with the thermoelectric figure-of-merit approaching ∼1 at room temperature. Our results suggest that these significantly improved thermoelectric properties are not due to the 2D quantum confinement effects but instead are a consequence of the Schottky barrier at the junction interface, which leads to hot carrier transport and shifts the balance between thermally and field-driven currents. This "bulk" effect extends the advantages of van der Waals materials beyond the few-layer limit. Adopting such an approach of using energy barriers between van der Waals materials, where the interface states are minimal, is expected to enhance the thermoelectric performance in other 2D materials as well.

  14. Polycrystalline silicon carbide dopant profiles obtained through a scanning nano-Schottky contact

    Energy Technology Data Exchange (ETDEWEB)

    Golt, M. C.; Strawhecker, K. E.; Bratcher, M. S. [U.S. Army Research Laboratory, WMRD, Aberdeen Proving Ground, Maryland 21005 (United States); Shanholtz, E. R. [ORISE, Belcamp, Maryland 21017 (United States)

    2016-07-14

    The unique thermo-electro-mechanical properties of polycrystalline silicon carbide (poly-SiC) make it a desirable candidate for structural and electronic materials for operation in extreme environments. Necessitated by the need to understand how processing additives influence poly-SiC structure and electrical properties, the distribution of lattice defects and impurities across a specimen of hot-pressed 6H poly-SiC processed with p-type additives was visualized with high spatial resolution using a conductive atomic force microscopy approach in which a contact forming a nano-Schottky interface is scanned across the sample. The results reveal very intricate structures within poly-SiC, with each grain having a complex core-rim structure. This complexity results from the influence the additives have on the evolution of the microstructure during processing. It was found that the highest conductivities localized at rims as well as at the interface between the rim and the core. The conductivity of the cores is less than the conductivity of the rims due to a lower concentration of dopant. Analysis of the observed conductivities and current-voltage curves is presented in the context of nano-Schottky contact regimes where the conventional understanding of charge transport to diode operation is no longer valid.

  15. GaAs detectors with an ultra-thin Schottky contact for spectrometry of charged particles

    Energy Technology Data Exchange (ETDEWEB)

    Chernykh, S.V., E-mail: chsv_84@mail.ru [National University of Science and Technology “MISIS”, Moscow (Russian Federation); Research Institute of Experimental and Theoretical Physics, Almaty (Kazakhstan); Chernykh, A.V. [National University of Science and Technology “MISIS”, Moscow (Russian Federation); Didenko, S.I.; Baryshnikov, F.M. [National University of Science and Technology “MISIS”, Moscow (Russian Federation); Research Institute of Experimental and Theoretical Physics, Almaty (Kazakhstan); Burtebayev, N. [Research Institute of Experimental and Theoretical Physics, Almaty (Kazakhstan); Institute of Nuclear Physics, Almaty (Kazakhstan); Britvich, G.I. [Institute of High Energy Physics, Protvino, Moscow region (Russian Federation); Chubenko, A.P. [Research Institute of Experimental and Theoretical Physics, Almaty (Kazakhstan); P.N. Lebedev Physical Institute of the Russian Academy of Sciences, Moscow (Russian Federation); Guly, V.G.; Glybin, Yu.N. [LLC “SNIIP Plus”, Moscow (Russian Federation); Zholdybayev, T.K.; Burtebayeva, J.T.; Nassurlla, M. [Research Institute of Experimental and Theoretical Physics, Almaty (Kazakhstan); Institute of Nuclear Physics, Almaty (Kazakhstan)

    2017-02-11

    For the first time, samples of particle detectors based on high-purity GaAs epilayers with an active area of 25 and 80 mm{sup 2} and an ultra-thin Pt Schottky barrier were fabricated for use in the spectrometry of charged particles and their operating characteristics were studied. The obtained FWHM of 14.2 (for 25 mm{sup 2} detector) and 15.5 keV (for 80 mm{sup 2} detector) on the 5.499 MeV line of {sup 238}Pu is at the level of silicon spectrometric detectors. It was found that the main component that determines the energy resolution of the detector is a fluctuation in the number of collected electron–hole pairs. This allows us to state that the obtained energy resolution is close to the limit for VPE GaAs. - Highlights: • VPE GaAs particle detectors with an active area of 25 and 80 mm{sup 2} were fabricated. • 120 Å ultra-thin Pt Schottky barrier was used as a rectifying contact. • The obtained FWHM of 14.2 keV ({sup 238}Pu) is at the level of Si spectrometric detectors. • Various components of the total energy resolution were analyzed. • It was shown that obtained energy resolution is close to its limit for VPE GaAs.

  16. Impact of defect distribution on IrOx/ZnO interface doping and Schottky barriers

    Science.gov (United States)

    Foster, Geoffrey M.; Gao, Hantian; Mackessy, Grace; Hyland, Alana M.; Allen, Martin W.; Wang, Buguo; Look, David C.; Brillson, Leonard J.

    2017-09-01

    We used depth-resolved cathodoluminescence spectroscopy (DRCLS) to measure the nature and spatial distribution of native point defects at Zn- and O-polar ZnO interfaces with iridium oxide (IrOx) and their impact on Schottky barrier formation. IrOx and other metal oxides exhibit higher Schottky barriers than their pure metal counterparts, consistent with wider depletion regions and potentially useful for ohmic contacts to p-type semiconductors. DRCLS with I-V and 1/C2-V barrier height and carrier profile measurements showed high zinc vacancy VZn and CuZn defect densities that compensate free carrier densities, increase depletion widths, and form higher effective barriers than Ir/ZnO contacts. Zn-polar versus O-polar ZnO interfaces with IrOx exhibit 40% higher VZn + CuZn interface segregation and lower carrier densities within a wider depletion region, accounting for the significantly higher (0.89 vs. 0.67 eV) barrier heights. Both the depth of VZn density segregation and the Zn-deficient layer thickness measured microscopically match the depletion width and applied electric fields comparable to spontaneous polarization fields across similar layers displaying analogous defect segregation. These results account for the difference in polarity-dependent segregation due to the electric field-driven diffusion of native defects near ZnO interfaces.

  17. Controllable Schottky barrier in GaSe/graphene heterostructure: the role of interface dipole

    Science.gov (United States)

    Si, Chen; Lin, Zuzhang; Zhou, Jian; Sun, Zhimei

    2017-03-01

    The discoveries of graphene and other related two-dimensional crystals have recently led to a new technology: van der Waals (vdW) heterostructures based on these atomically thin materials. Such a paradigm has been proved promising for a wide range of applications from nanoelectronics to optoelectronics and spintronics. Here, using first-principles calculations, we investigate the electronic structure and interface characteristics of a newly synthesized GaSe/graphene (GaSe/g) vdW heterostructure. We show that the intrinsic electronic properties of GaSe and graphene are both well preserved in the heterostructure, with a Schottky barrier formed at the GaSe/g interface. More interestingly, the band alignment between graphene and GaSe can be effectively modulated by tuning the interfacial distance or applying an external electric filed. This makes the Schottky barrier height (SBH) controllable, which is highly desirable in the electronic and optoelectronic devices based on vdW heterostructures. In particular, the tunability of the interface dipole and potential step is further uncovered to be the underlying mechanism that ensures this controllable tuning of SBH.

  18. A sensitive ultraviolet light photodiode based on graphene-on-zinc oxide Schottky junction

    Directory of Open Access Journals (Sweden)

    Zhang Teng-Fei

    2016-11-01

    Full Text Available In this study, we present a simple ultraviolet (UV light photodiode by transferring a layer of graphene film on single-crystal ZnO substrate. The as-fabricated heterojunction exhibited typical rectifying behavior, with a Schottky barrier height of 0.623 eV. Further optoelectronic characterization revealed that the graphene-ZnO Schottky junction photodiode displayed obvious sensitivity to 365-nm light illumination with good reproducibility. The responsivity and photoconductive gain were estimated to be 3×104 A/W and 105, respectively, which were much higher than other ZnO nanostructure-based devices. In addition, it was found that the on/off ratio of the present device can be considerably improved from 2.09 to 12.1, when the device was passivated by a layer of AlOx film. These results suggest that the present simply structured graphene-ZnO UV photodiode may find potential application in future optoelectronic devices.

  19. High-performance Schottky heterojunction photodetector with directly grown graphene nanowalls as electrodes.

    Science.gov (United States)

    Shen, Jun; Liu, Xiangzhi; Song, Xuefen; Li, Xinming; Wang, Jun; Zhou, Quan; Luo, Shi; Feng, Wenlin; Wei, Xingzhan; Lu, Shirong; Feng, Shuanglong; Du, Chunlei; Wang, Yuefeng; Shi, Haofei; Wei, Dapeng

    2017-05-11

    Schottky heterojunctions based on graphene-silicon structures are promising for high-performance photodetectors. However, existing fabrication processes adopt transferred graphene as electrodes, limiting process compatibility and generating pollution because of the metal catalyst. In this report, photodetectors are fabricated using directly grown graphene nanowalls (GNWs) as electrodes. Due to the metal-free growth process, GNWs-Si heterojunctions with an ultralow measured current noise of 3.1 fA Hz-1/2 are obtained, and the as-prepared photodetectors demonstrate specific detectivities of 5.88 × 1013 cm Hz1/2 W-1 and 2.27 × 1014 cm Hz1/2 W-1 based on the measured and calculated noise current, respectively, under ambient conditions. These are among the highest reported values for planar silicon Schottky photodetectors. In addition, an on/off ratio of 2 × 107, time response of 40 μs, cut-off frequency of 8.5 kHz and responsivity of 0.52 A W-1 are simultaneously realized. The ultralow current noise is attributed to the excellent junction quality with a barrier height of 0.69 eV and an ideal factor of 1.18. Furthermore, obvious infrared photoresponse is observed in blackbody tests, and potential applications based on the photo-thermionic effect are discussed.

  20. Temperature-dependent Schottky barrier in high-performance organic solar cells

    Science.gov (United States)

    Li, Hui; He, Dan; Zhou, Qing; Mao, Peng; Cao, Jiamin; Ding, Liming; Wang, Jizheng

    2017-01-01

    Organic solar cells (OSCs) have attracted great attention in the past 30 years, and the power conversion efficiency (PCE) now reaches around 10%, largely owning to the rapid material developments. Meanwhile with the progress in the device performance, more and more interests are turning to understanding the fundamental physics inside the OSCs. In the conventional bulk-heterojunction architecture, only recently it is realized that the blend/cathode Schottky junction serves as the fundamental diode for the photovoltaic function. However, few researches have focused on such junctions, and their physical properties are far from being well-understood. In this paper based on PThBDTP:PC71BM blend, we fabricated OSCs with PCE exceeding 10%, and investigated temperature-dependent behaviors of the junction diodes by various characterization including current-voltage, capacitance-voltage and impedance measurements between 70 to 290 K. We found the Schottky barrier height exhibits large inhomogeneity, which can be described by two sets of Gaussian distributions. PMID:28071700

  1. A sensitive ultraviolet light photodiode based on graphene-on-zinc oxide Schottky junction

    Science.gov (United States)

    Zhang, Teng-Fei; Wu, Guo-An; Wang, Jiu-Zhen; Yu, Yong-Qiang; Zhang, Deng-Yue; Wang, Dan-Dan; Jiang, Jing-Bo; Wang, Jia-Mu; Luo, Lin-Bao

    2017-08-01

    In this study, we present a simple ultraviolet (UV) light photodiode by transferring a layer of graphene film on single-crystal ZnO substrate. The as-fabricated heterojunction exhibited typical rectifying behavior, with a Schottky barrier height of 0.623 eV. Further optoelectronic characterization revealed that the graphene-ZnO Schottky junction photodiode displayed obvious sensitivity to 365-nm light illumination with good reproducibility. The responsivity and photoconductive gain were estimated to be 3×104 A/W and 105, respectively, which were much higher than other ZnO nanostructure-based devices. In addition, it was found that the on/off ratio of the present device can be considerably improved from 2.09 to 12.1, when the device was passivated by a layer of AlOx film. These results suggest that the present simply structured graphene-ZnO UV photodiode may find potential application in future optoelectronic devices.

  2. Novel field-effect schottky barrier transistors based on graphene-MoS 2 heterojunctions

    KAUST Repository

    Tian, He

    2014-08-11

    Recently, two-dimensional materials such as molybdenum disulphide (MoS 2) have been demonstrated to realize field effect transistors (FET) with a large current on-off ratio. However, the carrier mobility in backgate MoS2 FET is rather low (typically 0.5-20 cm2/V.s). Here, we report a novel field-effect Schottky barrier transistors (FESBT) based on graphene-MoS2 heterojunction (GMH), where the characteristics of high mobility from graphene and high on-off ratio from MoS2 are properly balanced in the novel transistors. Large modulation on the device current (on/off ratio of 105) is achieved by adjusting the backgate (through 300 nm SiO2) voltage to modulate the graphene-MoS2 Schottky barrier. Moreover, the field effective mobility of the FESBT is up to 58.7 cm2/V.s. Our theoretical analysis shows that if the thickness of oxide is further reduced, a subthreshold swing (SS) of 40 mV/decade can be maintained within three orders of drain current at room temperature. This provides an opportunity to overcome the limitation of 60 mV/decade for conventional CMOS devices. The FESBT implemented with a high on-off ratio, a relatively high mobility and a low subthreshold promises low-voltage and low-power applications for future electronics.

  3. Low-frequency noise properties in Pt-indium gallium zinc oxide Schottky diodes

    Science.gov (United States)

    Zhang, Jiawei; Zhang, Linqing; Ma, Xiaochen; Wilson, Joshua; Jin, Jidong; Du, Lulu; Xin, Qian; Song, Aimin

    2015-08-01

    The low-frequency noise properties of Pt-indium gallium zinc oxide (IGZO) Schottky diodes at different forward biases are investigated. The IGZO layer and Pt contact were deposited by RF sputtering at room temperature. The diode showed an ideality factor of 1.2 and a barrier height of 0.94 eV. The current noise spectral density exhibited 1/f behavior at low frequencies. The analysis of the current dependency of the noise spectral density revealed that for the as-deposited diode, the noise followed Luo's mobility and diffusivity fluctuation model in the thermionic-emission-limited region and Hooge's empirical theory in the series-resistance-limited region. A low Hooge's constant of 1.4 × 10-9 was found in the space-charge region. In the series-resistance-limited region, the Hooge's constant was 2.2 × 10-5. After annealing, the diode showed degradation in the electrical performance. The interface-trap-induced noise dominated the noise spectrum. By using the random walk model, the interface-trap density was obtained to be 3.6 × 1015 eV-1 cm-2. This work provides a quantitative approach to analyze the properties of Pt-IGZO interfacial layers. These low noise properties are a prerequisite to the use of IGZO Schottky diodes in switch elements in memory devices, photosensors, and mixer diodes.

  4. Zinc Selenide-Based Schottky Barrier Detectors for Ultraviolet-A and Ultraviolet-B Detection

    Directory of Open Access Journals (Sweden)

    V. Naval

    2010-01-01

    Full Text Available Wide-bandgap semiconductors such as zinc selenide (ZnSe have become popular for ultraviolet (UV photodetectors due to their broad UV spectral response. Schottky barrier detectors made of ZnSe in particular have been shown to have both low dark current and high responsivity. This paper presents the results of electrical and optical characterization of UV sensors based on ZnSe/Ni Schottky diodes fabricated using single-crystal ZnSe substrate with integrated UV-A (320–400 nm and UV-B (280–320 nm filters. For comparison, characteristics characterization of an unfiltered detector is also included. The measured photoresponse showed good discrimination between the two spectral bands. The measured responsivities of the UV-A and UV-B detectors were 50 mA/W and 10 mA/W, respectively. A detector without a UV filter showed a maximum responsivity of about 110 mA/W at 375 nm wavelength. The speed of the unfiltered detector was found to be about 300 kHz primarily limited by the RC time constant determined largely by the detector area.

  5. Hot carrier multiplication on graphene/TiO2 Schottky nanodiodes.

    Science.gov (United States)

    Lee, Young Keun; Choi, Hongkyw; Lee, Hyunsoo; Lee, Changhwan; Choi, Jin Sik; Choi, Choon-Gi; Hwang, Euyheon; Park, Jeong Young

    2016-06-08

    Carrier multiplication (i.e. generation of multiple electron-hole pairs from a single high-energy electron, CM) in graphene has been extensively studied both theoretically and experimentally, but direct application of hot carrier multiplication in graphene has not been reported. Here, taking advantage of efficient CM in graphene, we fabricated graphene/TiO2 Schottky nanodiodes and found CM-driven enhancement of quantum efficiency. The unusual photocurrent behavior was observed and directly compared with Fowler's law for photoemission on metals. The Fowler's law exponent for the graphene-based nanodiode is almost twice that of a thin gold film based diode; the graphene-based nanodiode also has a weak dependence on light intensity-both are significant evidence for CM in graphene. Furthermore, doping in graphene significantly modifies the quantum efficiency by changing the Schottky barrier. The CM phenomenon observed on the graphene/TiO2 nanodiodes can lead to intriguing applications of viable graphene-based light harvesting.

  6. Schottky junctions on perovskite single crystals: light-modulated dielectric constant and self-biased photodetection

    KAUST Repository

    Shaikh, Parvez Abdul Ajij

    2016-08-16

    Schottky junctions formed between semiconductors and metal contacts are ubiquitous in modern electronic and optoelectronic devices. Here we report on the physical properties of Schottky-junctions formed on hybrid perovskite CH3NH3PbBr3 single crystals. It is found that light illumination can significantly increase the dielectric constant of perovskite junctions by 2300%. Furthermore, such Pt/perovskite junctions are used to fabricate self-biased photodetectors. A photodetectivity of 1.4 × 1010 Jones is obtained at zero bias, which increases to 7.1 × 1011 Jones at a bias of +3 V, and the photodetectivity remains almost constant in a wide range of light intensity. These devices also exhibit fast responses with a rising time of 70 μs and a falling time of 150 μs. As a result of the high crystal quality and low defect density, such single-crystal photodetectors show stable performance after storage in air for over 45 days. Our results suggest that hybrid perovskite single crystals provide a new platform to develop promising optoelectronic applications. © 2016 The Royal Society of Chemistry.

  7. Large-area silicon nanowire Schottky junction photodetector with tunable absorption and low junction capacitance

    Science.gov (United States)

    Hackett, L. P.; Seyedi, M. A.; Fiorentino, M.; Beausoleil, R. G.

    2017-06-01

    Silicon photodetectors for operation in the near-infrared with a sufficient responsivity and high-speed operation are currently needed as scalable, CMOS compatible components for photonic and communication applications. Photodetectors based on semiconductor nanowire structures with dielectric planarization enable larger active optical areas and higher operating speeds than planar devices due to reduced junction capacitance and enhanced absorption. Here, we report on the fabrication and characterization of a silicon nanowire photodetector with dielectric infilling and a transparent indium tin oxide (ITO) Schottky contact. Optical simulations show that the absorbed power can be confined at the top of the nanowire array, enabling efficient operation in the near-infrared. This is despite the relatively low absorption coefficient for silicon in this wavelength range in addition to the design of the nanowire array to have a low fill factor compared to the bulk material in order to minimize the junction capacitance. The responsivity of this device is  >0.3 A W-1 at a reverse bias of 2 V and the junction capacitance is 8  ±  2 nF cm-2, which are respectively comparable and lower than the values expected for a planar silicon Schottky junction photodetector with a similar active area.

  8. Studies of Large-Area Inversion-Layer Metal-Insulator-Semiconductor (IL/MIS) Solar Cells and Arrays

    Science.gov (United States)

    Ho, Fat Duen

    1996-01-01

    Many inversion-layer metal-insulator-semiconductor (IL/MIS) solar cells have been fabricated. There are around eighteen 1 cm(exp 2) IL/MIS solar cells which have efficiencies greater than 7%. There are only about three 19 cm(exp 2) IL/MIS cells which have efficiencies greater than 4%. The more accurate control of the thickness of the thin layer of oxide between aluminum and silicon of the MIS contacts has been achieved. A lot of effort and progress have been made in this area. A comprehensive model for MIS contacts under dark conditions has been developed that covers a wide range of parameters. It has been applied to MIS solar cells. One of the main advantages of these models is the prediction of the range of the thin oxide thickness versus the maximum efficiencies of the MIS solar cells. This is particularly important when the thickness is increased to 25 A. This study is very useful for our investigation of the IL/MIS solar cells. The two-dimensional numerical model for the IL/MIS solar cells has been tried to develop and the results are presented in this report.

  9. Late quaternary sea level changes of Gabes coastal plain and shelf: Identification of the MIS 5c and MIS 5a onshore highstands, southern Mediterranean

    Science.gov (United States)

    Gzam, Maher; Mejdoub, Noureddine El; Jedoui, Younes

    2016-02-01

    The continental shelf of the Gulf of Gabes is outlined, during the MIS 5c and MIS 5a onshore highstands, by the genesis of forced regressive beach ridges situated respectively at -19 m b.s.l/100 ka and -8 m b.s.l/80 ka. This area, considered as a stable domain since at least the last 130 ka (Bouaziz et al. 2003), is a particular zone for the reconstruction of the late quaternary sea-level changes in the region. Shuttle Radar Topography Mission (SRTM) data and field observations are highlighted to deduce interaction between hydrodynamic factors and antecedent topography. Variations in geomorphology were attributed to geological inheritance. Petrography and sedimentary facies of the submerged coastal ridges reveal that the palaeocoastal morphology was more agitated than today and the fluvial discharges are consistent. Actual morphologic trend deduced from different environment coasts (sandy coasts, sea cliffs and tidal flat) is marked by accumulation of marine sands and progradation.

  10. ProMIS augmented reality training of laparoscopic procedures face validity.

    Science.gov (United States)

    Botden, Sanne M B I; Buzink, Sonja N; Schijven, Marlies P; Jakimowicz, Jack J

    2008-01-01

    Conventional video trainers lack the ability to assess the trainee objectively, but offer modalities that are often missing in virtual reality simulation, such as realistic haptic feedback. The ProMIS augmented reality laparoscopic simulator retains the benefit of a traditional box trainer, by using original laparoscopic instruments and tactile tasks, but additionally generates objective measures of performance. Fifty-five participants performed a "basic skills" and "suturing and knot-tying" task on ProMIS, after which they filled out a questionnaire regarding realism, haptics, and didactic value of the simulator, on a 5-point-Likert scale. The participants were allotted to 2 experience groups: "experienced" (>50 procedures and >5 sutures; N = 27), and "moderately experienced" (augmented reality simulator for "basic skills" and "suturing and knot-tying" tasks. ProMIS was considered a good tool for training in laparoscopic skills for surgical residents and surgeons.

  11. Fully solution-processed zinc oxide MIS capacitors by ultrasonic spray pyrolysis in air ambient

    Directory of Open Access Journals (Sweden)

    Miguel A. Dominguez

    2017-06-01

    Full Text Available In this work, the fabrication and characterization of fully solution-processed zinc oxide metal–insulator–semiconductor (MIS capacitors by ultrasonic spray pyrolysis (USP are presented. Fluorine tin oxide by USP was used as transparent electrode, while spin-on glass by spin-coating was used as dielectric and zinc oxide by USP was used as active layer. Also, the zinc oxide film was characterized using photoluminescence spectroscopy, X-ray diffraction and Fourier transform infrared spectroscopy. The MIS capacitors were fabricated over glass slides and were highly transparent in the visible range, which makes their use feasible in transparent electronics. Employing capacitance–voltage and current–voltage measurements, the MIS capacitors were characterized.

  12. Minimally Invasive Direct Lateral Interbody Fusion (MIS-DLIF): Proof of Concept and Perioperative Results.

    Science.gov (United States)

    Abbasi, Hamid; Abbasi, Ali

    2017-01-14

    Minimally invasive direct lateral interbody fusion (MIS-DLIF) is a novel approach for fusions of the lumbar spine. In this proof of concept study, we describe the surgical technique and report our experience and the perioperative outcomes of the first nine patients who underwent this procedure. In this study we establish the safety and efficacy of this approach. MIS-DLIF was performed on 15 spinal levels in nine patients who failed to respond to conservative therapy for the treatment of a re-herniated disk, spondylolisthesis, or other severe disk disease of the lumbar spine. We recorded surgery time, blood loss, fluoroscopy time, patient-reported pain, and complications. Throughout the MIS-DLIF procedure, the surgeon is aided by biplanar fluoroscopic imaging to place an interbody graft or cage into the disc space through the interpleural space. A discectomy is performed in the same minimally invasive fashion. The procedure is usually completed with posterior pedicle screw fixation. MIS-DLIF took 44/85 minutes, on average, for 1/2 levels, with 54/112 ml of blood loss, and 0.3/1.7 days of hospital stay. Four of nine patients did not require overnight hospitalization and were discharged two to four hours after surgery. We did not encounter any clinically significant complications. At more than ninety days post surgery, the patients reported a statistically significant reduction of 4.5 points on a 10-point sliding pain scale. MIS-DLIF with pedicle screw fixation is a safe and clinically effective procedure for fusions of the lumbar spine. The procedure overcomes many of the limitations of the current minimally invasive approaches to the lumbar spine and is technically straightforward. MIS-DLIF has the potential to improve patient outcomes and reduce costs relative to the current standard of care and therefore warrants further investigation. We are currently expanding this study to a larger cohort and documenting long-term outcome data.

  13. Designing Undergraduate Curriculum for Management Information Systems (MIS Education: A Comparison of the MIS Programs of Turkish Universities with those of Global Universities

    Directory of Open Access Journals (Sweden)

    Eyüp AKÇETİN

    2017-05-01

    Full Text Available Competition in the global environment takes place among multinational corporations, which is directly linked to human resources and the quality of training and education they have. The competitive advantage of the businesses is associated with the excellence of human resources, which is measured by the education quality of the employees. Information systems have become an essential requirement for the businesses of today’s digital age. Therefore, with this study, curricula of 90 universities’ Management Information Systems (MIS Undergraduate Programs, 57 of which are foreign and 33 are Turkish, were compared. The study methods include data mining approaches namely random clustering and making a text mining analysis. As the number and importance of the MIS programs are rapidly increasing, it is aimed with these approaches to contribute developing a world-class curriculum model to improve the quality of education of them. On that ground, the main purpose of this study is creating a framework that defines a world-class MIS curriculum model by presenting the current situation in Turkey.

  14. An Auto-management Thesis Program WebMIS Based on Workflow

    Science.gov (United States)

    Chang, Li; Jie, Shi; Weibo, Zhong

    An auto-management WebMIS based on workflow for bachelor thesis program is given in this paper. A module used for workflow dispatching is designed and realized using MySQL and J2EE according to the work principle of workflow engine. The module can automatively dispatch the workflow according to the date of system, login information and the work status of the user. The WebMIS changes the management from handwork to computer-work which not only standardizes the thesis program but also keeps the data and documents clean and consistent.

  15. Modulation of electrical properties in Cu/n-type InP Schottky junctions using oxygen plasma treatment

    Science.gov (United States)

    Kim, Hogyoung; Cho, Yunae; Jung, Chan Yeong; Kim, Se Hyun; Kim, Dong-Wook

    2015-12-01

    Using current-voltage (I-V) measurements, we investigated the effect of oxygen plasma treatment on the temperature-dependent electrical properties of Cu/n-type indium phosphide (InP) Schottky contacts at temperatures in the range 100-300 K. Changes in the electrical parameters were evident below 180 K for the low-plasma-power sample (100 W), which is indicative of the presence of a wider distribution of regions of low barrier height. Modified Richardson plots were used to obtain Richardson constants, which were similar to the theoretical value of 9.4 A cm-2 K-2 for n-type InP. This suggests that, for all the samples, a thermionic emission model including a spatially inhomogeneous Schottky barrier can be used to describe the charge transport phenomena at the metal/semiconductor interface. The voltage dependence of the reverse-bias current revealed that Schottky emission was dominant for the untreated and high-plasma-power (250 W) samples. For the low-plasma-power sample, Poole-Frenkel emission was dominant at low voltages, whereas Schottky emission dominated at higher voltages. Defect states and nonuniformity of the interfacial layer appear to be significant in the reverse-bias charge transport properties of the low-plasma-power sample.

  16. Ultra-wideband balanced schottky envelope detector for data communication with high bitrate to carrier frequency ratio

    DEFF Research Database (Denmark)

    Granja, Angel Blanco; Cimoli, Bruno; Rodriguez, Sebastian

    2017-01-01

    filter that rejects the second harmonic spurious from the Schottky diode and a bias tee that selects the optimum rectification point. The manufactured prototype is able to demodulate error free a 4 Gbps amplitude shift keying (ASK) signal at 4 GHz carrier frequency, leading to a record bitrate...

  17. MoB/g-C3 N4 Interface Materials as a Schottky Catalyst to Boost Hydrogen Evolution.

    Science.gov (United States)

    Zhuang, Zechao; Li, Yong; Li, Zilan; Lv, Fan; Lang, Zhiquan; Zhao, Kangning; Zhou, Liang; Moskaleva, Lyudmila; Guo, Shaojun; Mai, Liqiang

    2018-01-08

    Proton adsorption on metallic catalysts is a prerequisite for efficient hydrogen evolution reaction (HER). However, tuning proton adsorption without perturbing metallicity remains a challenge. A Schottky catalyst based on metal-semiconductor junction principles is presented. With metallic MoB, the introduction of n-type semiconductive g-C3 N4 induces a vigorous charge transfer across the MoB/g-C3 N4 Schottky junction, and increases the local electron density in MoB surface, confirmed by multiple spectroscopic techniques. This Schottky catalyst exhibits a superior HER activity with a low Tafel slope of 46 mV dec-1 and a high exchange current density of 17 μA cm-2 , which is far better than that of pristine MoB. First-principle calculations reveal that the Schottky contact dramatically lowers the kinetic barriers of both proton adsorption and reduction coordinates, therefore benefiting surface hydrogen generation. © 2018 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

  18. Wavelength-dependent visible light response in vertically aligned nanohelical TiO2-based Schottky diodes

    Science.gov (United States)

    Kwon, Hyunah; Sung, Ji Ho; Lee, Yuna; Jo, Moon-Ho; Kim, Jong Kyu

    2018-01-01

    Enhancements in photocatalytic performance under visible light have been reported by noble metal functionalization on nanostructured TiO2; however, the non-uniform and discrete distribution of metal nanoparticles on the TiO2 surface makes it difficult to directly clarify the optical and electrical mechanisms. Here, we investigate the light absorption and the charge separation at the metal/TiO2 Schottky junctions by using a unique device architecture with an array of TiO2 nanohelixes (NHs) forming Schottky junctions both with Au-top and Pt-bottom electrodes. Wavelength-dependent photocurrent measurements through the Pt/TiO2 NHs/Au structures revealed that the origin of the visible light absorption and the separation of photogenerated carriers is the internal photoemission at the metal/nanostructured TiO2 Schottky junctions. In addition, a huge persistent photoconductivity was observed by the time-dependent photocurrent measurement, implying a long lifetime of the photogenerated carriers before recombination. We believe that the results help one to understand the role of metal functionalization on TiO2 and hence to enhance the photocatalytic efficiency by utilizing appropriately designed Schottky junctions.

  19. Local irradiation effects of one-dimensional ZnO based self-powered asymmetric Schottky barrier UV photodetector

    Energy Technology Data Exchange (ETDEWEB)

    Zhao, Yaxue [School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing 100083 (China); Qi, Junjie, E-mail: junjieqi@ustb.edu.cn [School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing 100083 (China); Biswas, Chandan [Department of Electrical Engineering, University of California Los Angeles, California 90095 (United States); Li, Feng; Zhang, Kui; Li, Xin [School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing 100083 (China); Zhang, Yue, E-mail: yuezhang@ustb.edu.cn [School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing 100083 (China); Key Laboratory of New Energy Materials and Technologies, University of Science and Technology Beijing, Beijing 100083 (China)

    2015-09-15

    A self-powered metal-semiconductor-metal (MSM) UV photodetector was successfully fabricated based on Ag/ZnO/Au structure with asymmetric Schottky barriers. This exhibits excellent performance compared to many previous studies. Very high photo-to-dark current ratio (approximately 10{sup 5}–10{sup 6}) was demonstrated without applying any external bias, and very fast switching time of less than 30 ms was observed during the investigation. Opposite photocurrent direction was generated by irradiating different Schottky diodes in the fabricated photodetector. Furthermore, the device performance was optimized by largely irradiating both the ZnO microwire (MW) junctions. Schottky barrier effect theory and O{sub 2} adsorption–desorption theories were used to investigate the phenomenon. The device has potential applications in self-powered UV detection field and can be used as electrical power source for electronic, optoelectronic and mechanical devices. - Highlights: • A self-powered Schottky barrier UV photodetector based on 1-D ZnO is fabricated. • For the first time we investigate the local irradiation effects of UV detector. • Irradiating both the junctions and ZnO can optimize the performance of the device.

  20. Schottky barrier tuning of the graphene/SnS2 van der Waals heterostructures through electric field

    Science.gov (United States)

    Zhang, Fang; Li, Wei; Ma, Yaqiang; Dai, Xianqi

    2018-03-01

    Combining the electronic structures of two-dimensional monolayers in ultrathin hybrid nanocomposites is expected to display new properties beyond their single components. The effects of external electric field (Eext) on the electronic structures of monolayer SnS2 with graphene hybrid heterobilayers are studied by using the first-principle calculations. It is demonstrated that the intrinsic electronic properties of SnS2 and graphene are quite well preserved due to the weak van der Waals (vdW) interactions. We find that the n-type Schottky contacts with the significantly small Schottky barrier are formed at the graphene/SnS2 interface. In the graphene/SnS2 heterostructure, the vertical Eext can control not only the Schottky barriers (n-type and p-type) but also contact types (Schottky contact or Ohmic contact) at the interface. The present study would open a new avenue for application of ultrathin graphene/SnS2 heterostructures in future nano- and optoelectronics.

  1. A High Frequency (HF) Inductive Power Transfer Circuit for High Temperature Applications Using SiC Schottky Diodes

    Science.gov (United States)

    Jordan, Jennifer L.; Ponchak, George E.; Spry, David J.; Neudeck, Philip G.

    2018-01-01

    Wireless sensors placed in high temperature environments, such as aircraft engines, are desirable to reduce the mass and complexity of routing wires. While communication with the sensors is straight forward, providing power wirelessly is still a challenge. This paper introduces an inductive wireless power transfer circuit incorporating SiC Schottky diodes and its operation from room temperature (25 C) to 500 C.

  2. Determination of the laterally homogeneous barrier height of palladium Schottky barrier diodes on n-Ge (111)

    CSIR Research Space (South Africa)

    Chawanda, A

    2011-05-01

    Full Text Available .5×1015 cm-3. The Pd Schottky contacts were fabricated by vacuum resistive evaporation. The electrical analysis of the contacts was investigated by means of current–voltage (I–V) and capacitance–voltage (C–V) measurements at a temperature of 296 K...

  3. Depositional and sea-level history from MIS 6 (Termination II) to MIS 3 on the southern continental shelf of South Africa

    Science.gov (United States)

    Cawthra, H. C.; Jacobs, Z.; Compton, J. S.; Fisher, E. C.; Karkanas, P.; Marean, C. W.

    2018-02-01

    Pleistocene shoreline deposits comprised of calcified shallow marine (palaeobeach) and aeolian (palaeodune) facies found along mid-latitude coastlines can be useful indicators of past sea levels. Here, we describe a succession of such deposits that are presently exposed both above (subaerial) and below (submerged) mean sea level along the southern Cape coast of South Africa, 18 km east of the town of Mossel Bay. The submerged units provide a window on Late Pleistocene coastal processes, as palaeoshoreline deposits in this study extend to water depths of up to 55 m on the mid-shelf. Five sedimentary facies were identified in the strata and were compared to modern depositional environments of the local littoral zone, which include aeolian dune, upper shoreface, foreshore, intertidal swash and back-barrier settings. Twenty-two geological units were observed and mapped. Some of these units were directly dated with optically stimulated luminescence (OSL) dating. OSL ages were obtained for ten samples from the subaerial and twelve samples from the submerged deposits. Those geological units not directly dated were interpreted based on sedimentology and field/stratigraphic relationships to dated units. The stratigraphy and chronology of the succession indicates a record of initial deposition during Termination II (T-II) meltwater events, preceding and leading to marine isotope stage (MIS) 5e. Indicators for multiple sea-level fluctuations between MIS 5d and MIS 4, and sediment deposition at the end of MIS 4 and start of MIS 3 are also found. Both regressive and transgressive depositional cycles are well-preserved in the succession. We propose that palaeodune and palaeobeach deposits along the South Coast of South Africa have no clear preference for deposition during sea-level transgressions or regressions. Sediment deposition more closely mirrors the rate of sea level change, with deposition and preservation either during times of rapid sea-level movement, or oscillation

  4. Temperature-dependent electrical parameters and current transport mechanisms of Ru/Ti/ n-InP Schottky diodes

    Science.gov (United States)

    Munikrishna Reddy, Y.; Padmasuvarna, R.; Lakshmi Narasappa, T.; Padma, R.; Rajagopal Reddy, V.

    2015-11-01

    The temperature-dependent electrical properties of Ru/Ti/ n-InP Schottky diodes have been investigated in the temperature range of 120 to 400 K. The estimated barrier heights for the Ru/Ti/ n-InP Schottky barrier diode from the I- V and C- V characteristics vary from 0.24 to 0.73 eV ( I- V) and 0.94 to 0.74 eV ( C- V) and the ideality factor ( n) from 4.65 to 1.80 in the temperature range of 120-400 K. It has been observed that the ideality factor decreases while the barrier height increases with the increase in temperature. The barrier height ( Φ b), ideality factor ( n) and series resistance ( R s) of the Ru/Ti/ n-InP Schottky diode have been also determined using Cheung's and Norde methods. The discrepancy between the barrier heights obtained from the I- V and C- V characteristics is discussed. The interface state densities ( N ss) extracted for the Ru/Ti/ n-InP Schottky diode are in the range of 6.75 × 1013 eV-1 cm-2 ( E c —0.23 eV)-1.09 × 1014 eV-1 cm-2 ( E c —0.17 eV) at 120 K and 1.67 × 1013 eV-1 cm-2 ( E c —0.75 eV)-5.02 × 1013 eV-1 cm-2 ( E c —0.59 eV) at 400 K. It is observed that the interface state density ( N ss) decreases with increase in temperature. Results reveal that the conduction current is dominated by Poole-Frenkel emission in the temperature range from 120 to 320 K and by Schottky emission above 360 K.

  5. High sensitivity Schottky junction diode based on monolithically grown aligned polypyrrole nanofibers: Broad range detection of m-dihydroxybenzene.

    Science.gov (United States)

    Ameen, Sadia; Akhtar, M Shaheer; Seo, Hyung-Kee; Shin, Hyung Shik

    2015-07-30

    Aligned p-type polypyrrole (PPy) nanofibers (NFs) thin film was grown on n-type silicon (100) substrate by an electrochemical technique to fabricate Schottky junction diode for the efficient detection of m-dihydroxybenzene chemical. The highly dense and well aligned PPy NFs with the average diameter (∼150-200 nm) were grown on n-type Si substrate. The formation of aligned PPy NFs was confirmed by elucidating the structural, compositional and the optical properties. The electrochemical behavior of the fabricated Pt/p-aligned PPy NFs/n-silicon Schottky junction diode was evaluated by cyclovoltametry (CV) and current (I)-voltage (V) measurements with the variation of m-dihydroxybenzene concentration in the phosphate buffer solution (PBS). The fabricated Pt/p-aligned PPy NFs/n-silicon Schottky junction diode exhibited the rectifying behavior of I-V curve with the addition of m-dihydroxybenzene chemical, while a weak rectifying I-V behavior was observed without m-dihydroxybenzene chemical. This non-linear I-V behavior suggested the formation of Schottky barrier at the interface of Pt layer and p-aligned PPy NFs/n-silicon thin film layer. By analyzing the I-V characteristics, the fabricated Pt/p-aligned PPy NFs/n-silicon Schottky junction diode displayed reasonably high sensitivity ∼23.67 μAmM(-1)cm(-2), good detection limit of ∼1.51 mM with correlation coefficient (R) of ∼0.9966 and short response time (10 s). Copyright © 2015 Elsevier B.V. All rights reserved.

  6. Annealing effects on electrical, structural, and surface morphological properties of Ir/n-InGaN Schottky structures

    Energy Technology Data Exchange (ETDEWEB)

    Reddy, V. Rajagopal; Padma, R.; Reddy, M.S.P. [Department of Physics, Sri Venkateswara University, Tirupati (India); Choi, C.J. [School of Semiconductor and Chemical Engineering, Semiconductor Physics Research Center (SPRC), Chonbuk National University, Jeonju (Korea, Republic of)

    2012-10-15

    The effects of thermal annealing on electrical and structural characteristics of iridium (Ir) Schottky contacts to n-type InGaN have been studied using current-voltage (I-V), capacitance-voltage (C-V), secondary ion mass spectrometer (SIMS), and X-ray diffraction (XRD) measurements. Measurements showed that the Schottky barrier height (SBH) of as-deposited sample is 0.79 eV (I-V) and 1.07 eV (C-V). It is observed that the barrier height increases to 0.85 eV (I-V) and 1.21 eV (C-V) after annealing at 300 C for 1 min in N{sub 2} ambient. However, it is found that the SBH slightly decreases when the contacts are annealed at 400 and 500 C and the corresponding values are 0.84 eV (I-V), 1.17 eV (C-V) for 400 C and 0.80 eV (I-V), 1.11 eV (C-V) for 500 C, respectively. Using Cheung's functions, the barrier height ({Phi}{sub b}), ideality factor (n), and series resistance (R{sub s}) are also calculated. From the above results, it is clear that the optimum annealing temperature for Ir Schottky contact is 300 C. SIMS and XRD results shows that the formation of gallide phases at Ir/n-InGaN interfaces could be the reason for variation in the SBHs upon annealing at elevated temperatures. Atomic force microscopy (AFM) results show that the overall surface morphology of Ir Schottky contacts on n-InGaN stays reasonably smooth. These results make Ir Schottky contacts attractive for high-temperature device applications. (Copyright copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  7. Inhomogeneous barrier height effect on the current-voltage characteristics of an Au/n-InP Schottky diode

    Science.gov (United States)

    Zeghdar, Kamal; Dehimi, Lakhdar; Saadoune, Achour; Sengouga, Nouredine

    2015-12-01

    We report the current-voltage (I-V) characteristics of the Schottky diode (Au/n-InP) as a function of temperature. The SILVACO-TCAD numerical simulator is used to calculate the I-V characteristic in the temperature range of 280-400 K. This is to study the effect of temperature on the I-V curves and assess the main parameters that characterize the Schottky diode such as the ideality factor, the height of the barrier and the series resistance. The I-V characteristics are analyzed on the basis of standard thermionic emission (TE) theory and the inhomogeneous barrier heights (BHs) assuming a Gaussian distribution. It is shown that the ideality factor decreases while the barrier height increases with increasing temperature, on the basis of TE theory. Furthermore, the homogeneous BH value of approximately 0.524 eV for the device has been obtained from the linear relationship between the temperature-dependent experimentally effective BHs and ideality factors. The modified Richardson plot, according to the inhomogeneity of the BHs, has a good linearity over the temperature range. The evaluated Richardson constant A* was 10.32 A·cm-2·K-2, which is close to the theoretical value of 9.4 A·cm-2·K-2 for n-InP. The temperature dependence of the I-V characteristics of the Au/n-InP Schottky diode have been successfully explained on the basis of the thermionic emission (TE) mechanism with a Gaussian distribution of the Schottky barrier heights (SBHs). Simulated I-V characteristics are in good agreement with the measurements [Korucu D, Mammadov T S. J Optoelectronics Advanced Materials, 2012, 14: 41]. The barrier height obtained using Gaussian Schottky barrier distribution is 0.52 eV, which is about half the band gap of InP.

  8. On the nature of thermal equilibrium point defects in Si: Are the thermal equilibrium point defects in Si crystals Frenkel pairs or Schottky defects?

    Science.gov (United States)

    Suezawa, Masashi; Iijima, Yoshiaki; Yonenaga, Ichiro

    2017-04-01

    Thermal equilibrium point defects (TEPD) are generated as Frenkel pairs or Schottky defects. It is still controversial whether the TEPD in Si are Frenkel or Schottky, which is recalled with the recent experimental finding of their formation energies. After reviews of the Frenkel pair and Schottky defects models, the latter was concluded to be the case since their formation energies determined experimentally are different from each other. This result was applied to calculate the critical ratio of the growth velocity/temperature gradient of the Voronkov model on the grown-in point defects in Si and obtained a different result.

  9. The TiO(2) nanoparticle effect on the performance of a conducting polymer Schottky diode.

    Science.gov (United States)

    Yoo, K H; Kang, K S; Chen, Y; Han, K J; Kim, Jaehwan

    2008-12-17

    Among the conjugate polymers, poly(3,4-ethylenedioxythiophene):poly (styrenesulfonate) (PEDOT:PSS) has been paid a great deal of attention for various application fields. The absorption intensity of the whole UV-visible range increases linearly, as the concentration of PEDOT:PSS increases. When a small amount of TiO(2) nanoparticles are dispersed in the PEDOT:PSS solution, the absorption in the visible range normally increases, but the UV range absorption (TiO(2) absorption area) is greatly depressed as the concentration of PEDOT:PSS increases. Various weight ratios of TiO(2) nanoparticles in PEDOT:PSS were prepared. The TiO(2)/PEDOT:PSS solution was spin-coated onto the Al electrode and thermally treated to remove water molecules and densify the film. These thermal processes generated nanocracks and nanoholes on the surface of the TiO(2)/PEDOT:PSS film. As the heating temperature increased, wider and longer nanocracks were generated. These nanocracks and nanoholes can be removed by subsequent coating and heating processes. Schottky diodes were fabricated using four different concentrations of TiO(2)-PEDOT:PSS solution. The forward current increased nearly two orders of magnitude by doping approximately 1% of TiO(2) nanoparticles in PEDOT:PSS. Increasing the TiO(2) nanoparticles in the PEDOT:PSS matrix, the forward current was continuously enhanced. The enhancement of forward current is nearly four orders of magnitude with respect to the pristine PEDOT:PSS Schottky diode. The possible conduction mechanisms were examined by using various plotting and curve-fitting methods including a space-charge-limited conduction mechanism [Ln(J) versus Ln(V)], Schottky emission mechanism [Ln(J) versus E(1/2)], and Poole-Frenkel emission mechanism [Ln(J/V) versus E(1/2)]. The plot of Ln(J) versus Ln(V) shows a linear relationship, implying that the major conduction mechanism is SCLC. As the concentration of TiO(2) increased, the conduction mechanism slightly detracted from the

  10. High density Schottky barrier IRCCD sensors for SWIR applications at intermediate temperature

    Science.gov (United States)

    Elabd, H.; Villani, T. S.; Tower, J. R.

    1982-01-01

    Monolithic 32 x 64 and 64 x 1:128 palladium silicide (Pd2Si) interline transfer infrared charge coupled devices (IRCCDs) sensitive in the 1 to 3.5 micron spectral band were developed. This silicon imager exhibits a low response nonuniformity of typically 0.2 to 1.6% rms, and was operated in the temperature range between 40 to 140 K. Spectral response measurements of test Pd2Si p-type Si devices yield quantum efficiencies of 7.9% at 1.25 microns, 5.6% at 1.65 microns 2.2% at 2.22 microns. Improvement in quantum efficiency is expected by optimizing the different structural parameters of the Pd2Si detectors. The spectral response of the Pd2Si detectors fit a modified Fowler emission model. The measured photo-electric barrier height for the Pd2Si detectors is 0.34 eV and the measured quantum efficiency coefficient, C1, is 19%/eV. The dark current level of Pd2Si Schottky barrier focal plane arrays (FPAs) is sufficiently low to enable operation at intermediate temperatures at TV frame rates. Typical dark current level measured at 120 K on the FPA is 2 nA/sq cm. The operating temperature of the Pd2Si FPA is compatible with passive cooler performance. In addition, high density Pd2Si Schottky barrier FPAs are manufactured with high yield and therefore represent an economical approach to short wavelength IR imaging. A Pd2Si Schottky barrier image sensor for push-broom multispectral imaging in the 1.25, 1.65, and 2.22 micron bands is being studied. The sensor will have two line arrays (dual band capability) of 512 detectors each, with 30 micron center-to-center detector spacing. The device will be suitable for chip-to-chip abutment, thus providing the capability to produce large, multiple chip focal planes with contiguous, in-line sensors.

  11. Heterodimensional Schottky contacts to modulation-doped heterojunction with application to photodetection

    Science.gov (United States)

    Seddik, Amro Anwar

    The growing technological demand for high speed and compact integrated electronics and Optics is a pressing challenge. Speed and compactness necessitate low power consumption semiconductors with high transport mobility carriers, with potential of ultra large-scale integration of electronic and Optoelectronics circuitry. One avenue to fulfill these requirements is to utilize reduced dimensionality where carriers are spatially confined to less than three-dimensions, causing their energy levels to become quantized and their transport favorably affected. With recent progress in semiconductor growth and processing technologies low dimensionality has become practically realizable, this makes the study of contact properties to these systems increasingly important. In this work we study the contact between a low- dimensional semiconductor structure and a three- dimensional metal and the application of such a contact in photodetection. We theoretically derive the thermionic emission current for Schottky contact to two-dimensional and one-dimensional structures. The derivation underscores the discrete nature of low-dimensional structures and shows that the thermionic emission current is reduced by a factor exponentially proportional to the first quantized energy level. We also propose and formulate, for the first time, a physical phenomenon in two-dimensional structures created by modulation doping of a heterojunction, which is the effect of the cloud of electrons in the small bandgap material on the thermionic emission current. We have named this the electron- electron cloud effect; we show that this interaction increases the effective Schottky barrier height in a fashion counter to the image force lowering mechanism. In order to realize Schottky contact to low-dimensional structures, we have fabricated a novel Heterojunction Metal-Semiconductor-Metal (HMSM) photodetector. Experimental characterization and the general trends of the behavior of the HMSM devices are presented

  12. 49 CFR Appendix H to Part 40 - DOT Drug and Alcohol Testing Management Information System (MIS) Data Collection Form

    Science.gov (United States)

    2010-10-01

    ..., App. H Appendix H to Part 40—DOT Drug and Alcohol Testing Management Information System (MIS) Data... 49 Transportation 1 2010-10-01 2010-10-01 false DOT Drug and Alcohol Testing Management Information System (MIS) Data Collection Form H Appendix H to Part 40 Transportation Office of the Secretary...

  13. Design of a Model Management Information System (MIS) for California's Regional Occupational Centers and Programs. Final Report.

    Science.gov (United States)

    Dick, James C.; And Others

    The management information system (MIS) development project for California's Regional Occupational Centers and Programs (ROC/Ps) was conducted in 3 phases over a 12-month period. Phase I involved a literature review and field study to match MIS design features and development strategy with existing conditions in ROC/Ps. A decision support system…

  14. Mapping the MIS Curriculum Based on Critical Skills of New Graduates: An Empirical Examination of IT Professionals

    Science.gov (United States)

    Downey, James P.; McMurtrey, Mark E.; Zeltmann, Steven M.

    2008-01-01

    MIS curricula research almost always focuses on either curriculum issues or the critical skills required of new MIS graduates, rarely both. This study examines both by determining the critical skills required of new graduates, from the perspective of IT professionals in the field, then uniquely mapping those skills into a comprehensive yet…

  15. ProMIS Augmented Reality Training of Laparoscopic Procedures Face Validity

    NARCIS (Netherlands)

    Botden, Sanne M. B. I.; Buzink, Sonja N.; Schijven, Marlies P.; Jakimowicz, Jack J.

    2008-01-01

    Background: Conventional video trainers lack the ability to assess the trainee objectively, but offer modalities that are often missing in virtual reality simulation, such as realistic haptic feedback. The ProMIS augmented reality laparoscopic simulator retains the benefit of a traditional box

  16. Adolescent Alcohol Consumption in Romania: A Blueprint for Measuring Alcohol (mis)Use

    NARCIS (Netherlands)

    van Hoof, Joris Jasper; Moll, Marit

    2012-01-01

    In order to address the issues of adolescent alcohol (mis)use in Romanian cities and to develop local alcohol prevention policies comprised of interventions aimed at reducing alcohol consumption and alcohol related problems, information on the prevalence of alcohol use and relevant related topics is

  17. Film, mis mõjub / Anne Applebaum ; tõlk. Kaarel Tarand

    Index Scriptorium Estoniae

    Applebaum, Anne

    2008-01-01

    Ajalehes The New York Review of Books (14. II) ilmunud artikkel poola režissööri Andrzej Wajda filmist "Katõn", mis räägib Katõni massimõrvast. Andrzej Wajda pälvis sel aastal Eesti presidendilt Maarjamaa Risti III klassi teenetemärgi

  18. Mis keelt räägib kuldsõdur? / Kristina Norman

    Index Scriptorium Estoniae

    Norman, Kristina, 1979-

    2009-01-01

    Kunstnik Kristina Norman oma Tõnismäe pronkssõduri monumenti käsitlevast kunstiprojektist "After-War", mis esindab Eestit 53. Veneetsia biennaalil, oma kunstnikupositsioonist, 9. mail kunstiprojekti osana toimunud aktsiooni, mil kunstnik viis Tallinnas Tõnismäele pronkssõduriga sarnase kuldse skulptuuri, eesmärgist

  19. "Sõnu mis ma kõige rohkem vajan..." : [luuletused] / Aarne Puu

    Index Scriptorium Estoniae

    Puu, Aarne

    2007-01-01

    Sisu: "Sõnu mis ma kõige rohkem vajan..." ; "Pühade-eelses tänavasaginas..." ; "Alati leidub keegi..." ; "Ma nägin und..." ; "Ma luban et ulatan sulle oma käe..." ; "Ühel ööl hakkas toanurgas nutma..." ; Hitchcock naeratab jälle

  20. ERP ehk tarkvara, mis teab ja teeb kõike / Kadri Põdra, Randel Uibo, Heiti Kender

    Index Scriptorium Estoniae

    Põdra, Kadri

    2006-01-01

    ERP (Enterprise Resource Planning) on majandustarkvara, mis võimaldab hallata ühtses süsteemis ettevõtte kõiki majandusandmeid ja äriprotsesse. Uuringufirma Faktum & Ariko poolt 2005. a. detsembris tehtud uuringust ERP-süsteemide kasutamise kohta Eesti suurettevõtetes. Lisatud statistilised diagrammid

  1. An Activity Theory Approach to Analyze Barriers to a Virtual Management Information Systems (MIS) Curriculum

    Science.gov (United States)

    Jaradat, Suhair; Qablan, Ahmad; Barham, Areej

    2011-01-01

    This paper explains how the activity theory is used as a framework to analyze the barriers to a virtual Management Information Stream (MIS) Curriculum in Jordanian schools, from both the sociocultural and pedagogical perspectives. Taking the activity system as a unit of analysis, this study documents the processes by which activities shape and are…

  2. Student Motivational Profiles in an Introductory MIS Course: An Exploratory Cluster Analysis

    Science.gov (United States)

    Nelson, Klara

    2014-01-01

    This study profiles students in an introductory MIS course according to a variety of variables associated with choice of academic major. The data were collected through a survey administered to 12 sections of the course. A two-step cluster analysis was performed with gender as a categorical variable and students' perceptions of task value…

  3. Kosovo - doominokivi, mis kohutab Venemaad ja teisi veriseid võime / Heiki Suurkask

    Index Scriptorium Estoniae

    Suurkask, Heiki, 1972-

    2008-01-01

    Autor analüüsib probleeme, mis on seotud Kosovo iseseisvumisega. Uue riigi teke 21. sajandi alguse Euroopas ei tohiks olla midagi erakordset, sest viimase poole sajandi jooksul on nähtud kümnete riikide sündi, arvab ta. Lisad: Doominokivid; Iseseisvunud riikide arv 1958-2006; Järjekorras ootavad; Millal algas uute riikide iseseisvumise doomino?

  4. FAS on tarneklausel, mis sobib ainult laevaga kaupa vedades / Jürgen Valter

    Index Scriptorium Estoniae

    Valter, Jürgen

    2008-01-01

    Rahvuvahelise Kaubanduskoja (ICC) koostatud rahvusvaheliste kaubandusreeglite tarneklauslite süsteemi teisest klauslist FAS, mis on suhteliselt müüjasõbralik, kuid seab samas müüjale mõnevõrra rohkem kohustusi kui esimene, EXW-klausel. Tabel: klauslitel on erinev vastutusmäär

  5. Comparison of the results of MIS-TLIF and open TLIF techniques in laborers

    Directory of Open Access Journals (Sweden)

    Daniel De Abreu Oliveira

    2014-01-01

    Full Text Available Objective: To compare clinical outcomes in laborers who have undergone open transforaminal interbody fusion (TLIF and minimally invasive transforaminal interbody fusion (MIS TLIF. Methods: 78 patients were submitted to lumbar arthrodesis by the same two spine surgeons partners from January 2008 to December 2012. Forty-one were submitted to traditional open arthrodesis and 37 to the minimally invasive procedure. Three patients were not included because they had already retired from work. The analyzed variables were length of hospitalization, length of follow-up, type of access (TILF or MIS TLIF, need for blood transfusion, percentage of improvement or worsening after surgery, pre- and postoperative VAS scale, time off work, pre-and postoperative Oswestry disability index, and general aspects of the laborers such as age, education, profession, working time, amount of daily weight carried at work, and use or not of personal protective equipment. Results: Time off work was longer in the TLIF group (average of 9.84 months compared with the MIS TLIF group (average of 3.20 months. Significant improvement in postoperative VAS and Oswestry was achieved in both groups. Average length of hospitalization was 5.73 days for the TLIF group and 2.76 days for the MIS TLIF group. Conclusions: Minimally invasive transforaminal lumbar interbody fusion presents similar results when compared to open TLIF, but has the benefits of less postoperative morbidity, shorter hospitalization times, and faster rehabilitation in laborer patients.

  6. Ühe minuti loeng: videoformaat, mis tuli ja võitis / Airi Ilisson-Cruz

    Index Scriptorium Estoniae

    Ilisson-Cruz, Airi, 1980-

    2014-01-01

    Tallinna Ülikooli "Ühe Minuti Loengu" videoklippide sarjast, mis võitis Suhtekorralduse Auhind 2013 hariduse eripreemia. Igas klipis arutleb teadlane lihtsas ja loogilises sõnastuses ühe konkreetse, sageli üllatusmomendiga fakti üle. Videoklippide sari kui sisuturunduse näide

  7. Reshould I Take More MIS Courses? Implications from Interviews with Business Recruiters

    Science.gov (United States)

    He, Jun; Guo, Yi Maggie

    2015-01-01

    It is important for MIS educators to have a good understanding of what IT knowledge and skills are required in business. In this study, 103 open job positions in the Midwestern United States were investigated via semi-structured interviews with hiring companies. The interviews with key business recruiters suggest that IT knowledge and skills are…

  8. Tüüne-Kristin & Urmo Vaikla : kodu, mis kujuneb aastatega / Gitte Hint

    Index Scriptorium Estoniae

    Hint, Gitte

    2003-01-01

    Pirita-Kosel asuva Tüüne-Kristin ja Urmo Vaikla eramu (arhitektid Vilen Künnapu, Ain Padrik) sisekujundus, mis pälvis 2000. a. Eesti Sisearhitektide Liidu aastapreemia. T.-K. ja U. Vaikla kommentaarid. Ill.: I ja II korruse plaan, 13 värv. vaadet

  9. An Alumni Assessment of MIS Related Job Skill Importance and Skill Gaps

    Science.gov (United States)

    Wilkerson, Jerod W.

    2012-01-01

    This paper presents the results of a job skill survey of Management Information Systems (MIS) alumni from a Northeastern U.S. university. The study assesses job skill importance and skill gaps associated with 104 technical and non-technical skill items. Survey items were grouped into 6 categories based on prior research. Skill importance and skill…

  10. Kaia Iva : poliitika on nagu iluaed, mis vajab naise kätt / Kaia Iva

    Index Scriptorium Estoniae

    Iva, Kaia, 1964-

    2008-01-01

    Ilmunud ka: Eesti Eest = Za Estoniju : Izdanije objedinenija "Sojuz Otetshestva i Res Publica" 20. juuni 2008, lk. 8. Intervjuu IRLi naiskogu uue juhi ja Riigikogu liikme Kaia Ivaga, kes vastab küsimustele, mis puudutavad naiste osa ja ülesandeid poliitikas

  11. Synthesis and Characterization of Reduced Graphene Oxide/Rhodamine 101 (rGO-Rh101) Nanocomposites and Their Heterojunction Performance in rGO-Rh101/p-Si Device Configuration

    Science.gov (United States)

    Batır, G. Güven; Arık, Mustafa; Caldıran, Zakir; Turut, Abdulmecit; Aydogan, Sakir

    2017-09-01

    Reduced graphene oxide (rGO)-rhodamine 101 (Rh101) nanocomposites with different ratios of rGO have been synthesized in aqueous medium by ultrasonic homogenization. The fluorescence of Rh101 as measured using a laser dye with high fluorescence quantum yield was substantially quenched with increasing amount of rGO in the nanocomposite. Formation of rGO-Rh101 nanocomposites was confirmed by x-ray diffraction analysis, scanning electron microscopy, ultraviolet-visible (UV-Vis) spectroscopy, and fluorescence microscopy. Furthermore, rGO-Rh101 nanocomposite/p-Si heterojunctions were synthesized, all of which showed good rectifying behavior. The electrical characteristics of these devices were analyzed using current-voltage (I-V) measurements to determine the ideality factor and barrier height. The experimental results confirmed the presence of lateral inhomogeneity in the effective barrier height of the rGO-Rh101 nanocomposite/p-Si heterojunctions. In addition to I-V measurements, one device was analyzed in more detail using frequency-dependent capacitance-voltage measurements. All electrical measurements were carried out at room temperature and in the dark.

  12. Synthesis and Characterization of Reduced Graphene Oxide/Rhodamine 101 (rGO-Rh101) Nanocomposites and Their Heterojunction Performance in rGO-Rh101/ p-Si Device Configuration

    Science.gov (United States)

    Batır, G. Güven; Arık, Mustafa; Caldıran, Zakir; Turut, Abdulmecit; Aydogan, Sakir

    2018-01-01

    Reduced graphene oxide (rGO)-rhodamine 101 (Rh101) nanocomposites with different ratios of rGO have been synthesized in aqueous medium by ultrasonic homogenization. The fluorescence of Rh101 as measured using a laser dye with high fluorescence quantum yield was substantially quenched with increasing amount of rGO in the nanocomposite. Formation of rGO-Rh101 nanocomposites was confirmed by x-ray diffraction analysis, scanning electron microscopy, ultraviolet-visible (UV-Vis) spectroscopy, and fluorescence microscopy. Furthermore, rGO-Rh101 nanocomposite/ p-Si heterojunctions were synthesized, all of which showed good rectifying behavior. The electrical characteristics of these devices were analyzed using current-voltage ( I- V) measurements to determine the ideality factor and barrier height. The experimental results confirmed the presence of lateral inhomogeneity in the effective barrier height of the rGO-Rh101 nanocomposite/ p-Si heterojunctions. In addition to I- V measurements, one device was analyzed in more detail using frequency-dependent capacitance-voltage measurements. All electrical measurements were carried out at room temperature and in the dark.

  13. The Development of a Computer Based Education Management Information System (MIS Model in Elementary School Bandar Lampung

    Directory of Open Access Journals (Sweden)

    Riswandi Riswandi

    2017-02-01

    Full Text Available The general objective of the research is to develop a model of  a computer-based education management information systems (MIS in Elementary schools   and the specific objectives were to (1 develop a prototype model of an education MIS computer-based; and (2 to develop the procedure Manual of a computer-based education MIS models. The design of the research was research and development proposed by Borg and Gall. The samples were elementary schools in the city of Bandar Lampung. The research procedure were (1 determining the location of the research, (2 collecting data, (3 designing the initial product and validating to the experts, (4 conducting a seminar in the forum group discussion (FGD, and (5 revising the first design. The result of the product is a prototype model of computer-based education MIS and the manual procedure of computer based education MIS for the elementary school.

  14. Large area, low capacitance, GaAs nanowire photodetector with a transparent Schottky collecting junction

    Energy Technology Data Exchange (ETDEWEB)

    Seyedi, M. A., E-mail: seyedi@usc.edu; Yao, M.; O' Brien, J.; Dapkus, P. D. [Center for Energy Nanoscience, University of Southern California, Los Angeles, California 90089 (United States); Wang, S. Y. [Center for Energy Nanoscience, University of Southern California, Los Angeles, California 90089 (United States); Nanostructured Energy Conversion Technology and Research (NECTAR), Advanced Studies Laboratories, University of California, Santa Cruz, California 95064, USA and NASA Ames Research Center, Moffett Field, California 94035 (United States)

    2013-12-16

    We present experimental results on a GaAs/Indium-Tin-Oxide Schottky-like heterojunction photodetector based on a nanowire device geometry. By distributing the active detecting area over an array of nanowires, it is possible to achieve large area detection with low capacitance. Devices with bare GaAs and passivated AlGaAs/GaAs nanowires are fabricated to compare the responsivity with and without surface passivation. We are able to achieve responsivity of >0.5A/W and Signal-Noise-Ratio in excess of 7 dB for 2 V applied reverse bias with passivated nanowire devices. Capacitance-voltage measurement yields <5 nF/cm{sup 2}, which shows a strong possibility for high-speed applications with a broad area device.

  15. Carbon nanotube and CdSe nanobelt Schottky junction solar cells.

    Science.gov (United States)

    Zhang, Luhui; Jia, Yi; Wang, Shanshan; Li, Zhen; Ji, Chunyan; Wei, Jinquan; Zhu, Hongwei; Wang, Kunlin; Wu, Dehai; Shi, Enzheng; Fang, Ying; Cao, Anyuan

    2010-09-08

    Developing nanostructure junctions is a general and effective way for making photovoltaics. We report Schottky junction solar cells by coating carbon nanotube films on individual CdSe nanobelts with open-circuit voltages of 0.5 to 0.6 V and modest power-conversion efficiencies (0.45-0.72%) under AM 1.5G, 100 mW/cm(2) light condition. In our planar device structure, the CdSe nanobelt serves as a flat substrate to sustain a network of nanotubes, while the nanotube film forms Shottky junction with the underlying nanobelt at their interface and also makes a transparent electrode for the device. The nanotube-on-nanobelt solar cells can work either in front (nanotube side) or back (nanobelt side) illumination with stable performance in air. Our results demonstrate a promising way to develop large-area solar cells based on thin films of carbon nanotubes and semiconducting nanostructures.

  16. Untersuchung eines breitbandigen Koaxial-Hohlleiterübergangs für einen Schottky-Strahldiagnosedetektor

    CERN Document Server

    Ehret, M; Wendt, M

    In der vorliegenden Arbeit wurde ein Koaxial-Hohlleiterübergang im Mikrowellenbereich (4.8 GHz) untersucht und verbessert. Diese Kopplung ist eine der Schlüsselstellen des sogenannten „Schottky-Detektors“. Dieser Detektor befindet sich innerhalb des Teilchenbeschleunigers des Large Hadron Colliders am CERN. Während der Arbeit wurden verschiedene Untersuchungen am Detektor durchgeführt und anhand der ermittelten Ergebnisse eine veränderte Kopplerstruktur entwickelt. Diese Struktur wurde zuerst anhand von verschiedenen Modellen in einer elektromagnetischen Feldsimulation überprüft und mit Hilfe verschiedener Algorithmen verifiziert. Im nächsten Schritt wurde ein Testaufbau entwickelt, mit dem eine Überprüfung und eine abschließende Betrachtung der Ergebnisse möglich war. Es konnte gezeigt werden, dass mit der neu entwickelten Struktur die Kopplereigenschaften wesentlich verbessert und die Zielvorgaben sogar deutlich übertroffen wurden.

  17. Effect of cooling on the efficiency of Schottky varactor frequency multipliers at millimeter waves

    Science.gov (United States)

    Louhi, Jyrki; Raiesanen, Antti; Erickson, Neal

    1992-01-01

    The efficiency of the Schottky diode multiplier can be increased by cooling the diode to 77 K. The main reason for better efficiency is the increased mobility of the free carriers. Because of that the series resistance decreases and a few dB higher efficiency can be expected at low input power levels. At high output frequencies and at high power levels, the current saturation decreases the efficiency of the multiplication. When the diode is cooled the maximum current of the diode increases and much more output power can be expected. There are also slight changes in the I-V characteristic and in the diode junction capacitance, but they have a negligible effect on the efficiency of the multiplier.

  18. Upgrade of the LHC Schottky Monitor, Operational Experience and First Results

    CERN Document Server

    Betz, Michael; Lefèvre, Thibaut; Wendt, Manfred

    2016-01-01

    The LHC Schottky system allows the measurement of beam parameters such as tune and chromaticity in an entirely non-invasive way by extracting information from the statistical fluctuations in the incoherent motion of particles. The system was commissioned in 2011 and provided satisfactory beam-parameter measurements during LHC run 1 for lead-ions. However, for protons its usability was substantially limited due to strong interfering signals originating from the coherent motion of the particle bunch. The system has recently been upgraded with optimized travelling-wave pick-ups and an improved 4.8~GHz microwave signal path, with the front-end and the triple down-mixing chain optimized to reduce coherent signals. Design and operational aspects for the complete system are shown and the results from measurements with LHC beams in Run II are presented and discussed.

  19. Hard X-ray detection with a gallium phosphide Schottky diode

    Energy Technology Data Exchange (ETDEWEB)

    Owens, Alan [Science Payload and Advanced Concepts Office, ESA/ESTEC, Postbus 299, 2200AG Noordwijk (Netherlands)], E-mail: aowens@rssd.esa.int; Andersson, S.; Hartog, R. den; Quarati, F. [Science Payload and Advanced Concepts Office, ESA/ESTEC, Postbus 299, 2200AG Noordwijk (Netherlands); Webb, A.; Welter, E. [HASYLAB at DESY, Notkestrasse 85, D-22607 Hamburg (Germany)

    2007-11-01

    We report on the detection of hard X-rays using a GaP Schottky diode at the HASYLAB synchrotron radiation research facility. Exposure to alpha particles from an {sup 214}Am source showed that the device was spectroscopic at room temperature with a FWHM energy resolution of 3.5% at 5.5 MeV. It was also found to be responsive to X-rays in the range 11-100 keV. Although individual energies are not spectrally resolved there is a proportionality of response to increasing X-ray energy. A two-dimensional scan of the sensitive area using a 30x30 {mu}m{sup 2} 30 keV pencil beam showed the spatial response of the detector to be uniform at the few percent level, consistent with statistics.

  20. Review and test of methods for determination of the Schottky diode parameters

    Science.gov (United States)

    Olikh, O. Ya.

    2015-07-01

    This paper deals with the extraction of the Schottky diode parameters from a current-voltage characteristic. 10 analytical methods, 2 numerical methods, and 4 evolutionary algorithms of the series resistance, barrier height, and ideality factor determination are reviewed. The accuracy of the methods is quantified using a wide range of both ideal and noisy synthetic data. In addition, the influencing factors of the parameters extraction accuracy are estimated. The adaptive procedure, which improves the precision of analytical Gromov's method, is suggested. The use of Lambert W function has been shown to reduce the error of parameter extraction by numerical method. Finally, all methods are applied to experimental data. The most reliable and preferred methods are chosen.

  1. Photovoltaic characterization of graphene/silicon Schottky junctions from local and macroscopic perspectives

    Science.gov (United States)

    Hájková, Zdeňka; Ledinský, Martin; Vetushka, Aliaksei; Stuchlík, Jiří; Müller, Martin; Fejfar, Antonín; Bouša, Milan; Kalbáč, Martin; Frank, Otakar

    2017-05-01

    We present Schottky junction solar cell composed of graphene transferred onto hydrogenated amorphous and microcrystalline silicon, a low-cost alternative to well-explored crystalline silicon. We demonstrated sample with open-circuit voltage of 445 mV, a remarkable value for undoped graphene-based solar cell. Photovoltaic characteristics of this sample remained stable over 11 months and could be further improved by doping. The graphene/silicon junctions were characterized by current-voltage curves obtained locally by conductive atomic force microscopy (C-AFM) and macroscopically by standard solar simulator. Very good correlation between both independent measurements proved C-AFM as highly useful tool for photovoltaic characterization on nano- and micrometer scale.

  2. Plasmonic silicon Schottky photodetectors: The physics behind graphene enhanced internal photoemission

    Directory of Open Access Journals (Sweden)

    Uriel Levy

    2017-02-01

    Full Text Available Recent experiments have shown that the plasmonic assisted internal photoemission from a metal to silicon can be significantly enhanced by introducing a monolayer of graphene between the two media. This is despite the limited absorption in a monolayer of undoped graphene ( ∼ π α = 2.3 % . Here we propose a physical model where surface plasmon polaritons enhance the absorption in a single-layer graphene by enhancing the field along the interface. The relatively long relaxation time in graphene allows for multiple attempts for the carrier to overcome the Schottky barrier and penetrate into the semiconductor. Interface disorder is crucial to overcome the momentum mismatch in the internal photoemission process. Our results show that quantum efficiencies in the range of few tens of percent are obtainable under reasonable experimental assumptions. This insight may pave the way for the implementation of compact, high efficiency silicon based detectors for the telecom range and beyond.

  3. Modeling and Design of a New Flexible Graphene-on-Silicon Schottky Junction Solar Cell

    Directory of Open Access Journals (Sweden)

    Francesco Dell’Olio

    2016-10-01

    Full Text Available A new graphene-based flexible solar cell with a power conversion efficiency >10% has been designed. The environmental stability and the low complexity of the fabrication process are the two main advantages of the proposed device with respect to other flexible solar cells. The designed solar cell is a graphene/silicon Schottky junction whose performance has been enhanced by a graphene oxide layer deposited on the graphene sheet. The effect of the graphene oxide is to dope the graphene and to act as anti-reflection coating. A silicon dioxide ultrathin layer interposed between the n-Si and the graphene increases the open-circuit voltage of the cell. The solar cell optimization has been achieved through a mathematical model, which has been validated by using experimental data reported in literature. The new flexible photovoltaic device can be integrated in a wide range of microsystems powered by solar energy.

  4. An X-band Schottky diode mixer in SiGe technology with tunable Marchand balun

    DEFF Research Database (Denmark)

    Michaelsen, Rasmus Schandorph; Johansen, Tom Keinicke; Tamborg, Kjeld M.

    2017-01-01

    In this paper, we propose a double balanced mixer with a tunable Marchand balun. The circuit is designed in a SiGe BiCMOS process using Schottky diodes. The tunability of the Marchand balun is used to enhance critical parameters for double balanced mixers. The local oscillator-IF isolation can...... be changed from –51 to –60.5 dB by tuning. Similarly, the IIP2 can be improved from 41.3 to 48.7 dBm at 11 GHz, while the input referred 1-dB compression point is kept constant at 8 dBm. The tuning have no influence on conversion loss, which remains at 8.8 dB at a LO power level of 11 dBm at the center...

  5. Ultraviolet Schottky detector based on epitaxial ZnO thin film

    Science.gov (United States)

    Jiang, Dayong; Zhang, Jiying; Lu, Youming; Liu, Kewei; Zhao, Dongxu; Zhang, Zhenzhong; Shen, Dezhen; Fan, Xiwu

    2008-05-01

    In this paper, we have prepared Schottky type ZnO metal-semiconductor-metal (MSM) ultraviolet (UV) detector. The structural, electrical, and optical measurements were carried out. The detector exhibited a peak responsivity of 0.337 A/W at 360 nm and the dark current was about 1 nA under 3 V bias. An ultraviolet-visible rejection ratio was obtained about more than four orders of magnitude from the fabricated detector. The 10-90% rise and fall time were 20 ns and 250 ns, respectively. We proposed that the detector had shown a gain, which was attributed to the trapping of hole carriers at the semiconductor-metal interface.

  6. Stacked mechanical nanogenerator comprising piezoelectric semiconducting nanostructures and Schottky conductive contacts

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Zhong L [Marietta, GA; Xu, Sheng [Atlanta, GA

    2011-08-23

    An electric power generator includes a first conductive layer, a plurality of semiconducting piezoelectric nanostructures, a second conductive layer and a plurality of conductive nanostructures. The first conductive layer has a first surface from which the semiconducting piezoelectric nanostructures extend. The second conductive layer has a second surface and is parallel to the first conductive layer so that the second surface faces the first surface of the first conductive layer. The conductive nanostructures depend downwardly therefrom. The second conductive layer is spaced apart from the first conductive layer at a distance so that when a force is applied, the semiconducting piezoelectric nanostructures engage the conductive nanostructures so that the piezoelectric nanostructures bend, thereby generating a potential difference across the at semiconducting piezoelectric nanostructures and also thereby forming a Schottky barrier between the semiconducting piezoelectric nanostructures and the conductive nanostructures.

  7. Technology CAD of silicided Schottky barrier MOSFET for elevated source-drain engineering

    Energy Technology Data Exchange (ETDEWEB)

    Saha, A.R. [Department of Electronics and ECE, IIT, Kharagpur 721302 (India)]. E-mail: ars.iitkgp@gmail.com; Chattopadhyay, S. [Department of Electronics and ECE, IIT, Kharagpur 721302 (India); School of Electrical, Electronics and Computer Engineering, University of Newcastle, Newcastle upon Tyne (United Kingdom); Bose, C. [Department of Electronics and Telecommunication Engineering, Jadavpur University, Calcutta 700032 (India); Maiti, C.K. [Department of Electronics and ECE, IIT, Kharagpur 721302 (India)

    2005-12-05

    Technology CAD has been used to study the performance of a silicided Schottky barrier (SB) MOSFET with gate, source and drain contacts realized with nickel-silicide. Elevated source-drain structures have been used towards the S/D engineering of CMOS devices. A full process-to-device simulation has been employed to predict the performance of sub-micron SB n-MOSFETs for the first time. A model for the diffusion and alloy growth kinetics has been incorporated in SILVACO-ATLAS and ATHENA to explore the processing and design parameter space for the Ni-silicided MOSFETs. The temperature and concentration dependent diffusion model for NiSi have been developed and necessary material parameters for nickel-silicide and epitaxial-Si have been incorporated through the C-interpreter function. Two-dimensional (2D) process-to-device simulations have also been used to study the dc and ac (RF) performance of silicided Schottky barrier (SB) n-MOSFETs. The extracted sheet resistivity, as a function of annealing temperature of the silicided S/D contacts, is found to be lower than the conventional contacts currently in use. It is also shown that the Technology CAD has the full capability to predict the possible dc and ac performance enhancement of a MOSFET with elevated S/D structures. While the simulated dc performance shows a clear enhancement, the RF analyses show no performance degradation in the cut-off frequency/propagation delay and also improve the ac performance due to the incorporation of silicide contacts in the S/D region.

  8. Numerical simulations of the electrical transport characteristics of a Pt/n-GaN Schottky diode

    Science.gov (United States)

    Bouzid, Fayçal; Pezzimenti, Fortunato; Dehimi, Lakhdar; Megherbi, Mohamed L.; Della Corte, Francesco G.

    2017-09-01

    In this paper, using a numerical simulator, we investigated the current-voltage characteristics of a Pt/n-GaN thin Schottky diode on the basis of the thermionic emission (TE) theory in the 300 to 500 K temperature range. During the simulations, the effect of different defect states within the n-GaN bulk with different densities and spatial locations is considered. The results show that the diode ideality factor and the threshold voltage decrease with increasing temperature, while at the same time, the zero-bias Schottky barrier height (Φb0) extracted from the forward current density-voltage (J-V) characteristics increases. The observed behaviors of the ideality factor and zero-bias barrier height are analyzed on the basis of spatial barrier height inhomogeneities at the Pt/GaN interface by assuming a Gaussian distribution (GD). The plot of apparent barrier height (Φb,App) as a function of q/2kT gives a straight line, where the mean zero-bias barrier height (\\overline{Φ \\text{b0}}) and the standard deviation (σ0) are 1.48 eV and 0.047 V, respectively. The plot of the modified activation energy against q/kT gives an almost the same value of \\overline{Φ \\text{b0}} and an effective Richardson constant A* of 28.22 A cm-2 K-2, which is very close to the theoretical value for n-type GaN/Pt contacts. As expected, the presence of defect states with different trap energy levels has a noticeable impact on the device electrical characteristics.

  9. A high performance charge plasma PN-Schottky collector transistor on silicon-on-insulator

    Science.gov (United States)

    Loan, Sajad A.; Bashir, Faisal; Rafat, M.; Alamoud, Abdul Rehman M.; Abbasi, Shuja A.

    2014-09-01

    In this paper, we propose a new high performance PN-Schottky collector (PN-SC) lateral bipolar junction transistor (BJT) on silicon-on-insulator (SOI). The proposed device addresses the problem of poor speed of conventional lateral PNP-BJT device by using a Schottky collector. Further, it does not use the conventional ways of ion implantation/diffusion to realize n and p type doped region. However, it uses metal electrodes of different work functions to create n and p type charge plasma in an undoped silicon film. The simulation study of the proposed lateral PN-SC bipolar charge plasma transistor on SOI (PN-SC-BCPT) device has shown a significant improvement in current gain (β), cutoff frequency (f T) and switching performance in comparison to conventional PNP-BJT and PNP-bipolar charge plasma transistor (PNP-BCPT) devices. A significantly high β is obtained in the proposed PN-SC-BCPT (˜2100) in comparison to PNP-BCPT (˜1450) and the conventional BJT (˜9) devices, respectively. It has been observed that there is 89.56% and 153.5% increase in f T for the proposed PN-SC-BCPT device (2.18 GHz) in comparison to conventional PNP-BJT (1.15 GHz) and PNP-BCPT (0.86 GHz) devices, respectively. Further, reductions of 24.6% and 15.4% in switching ON-delay and 66% and 30.76% in switching OFF-delay have been achieved in the proposed device based inverters in comparison to PNP-BCPT and the conventional BJT devices based inverters, respectively. Furthermore, the proposed device does not face doping related issues and the requirement of high temperature processing is absent.

  10. Electrical and noise properties of proton irradiated 4H-SiC Schottky diodes

    Science.gov (United States)

    Kozlovski, V. V.; Lebedev, A. A.; Levinshtein, M. E.; Rumyantsev, S. L.; Palmour, J. W.

    2018-01-01

    The current voltage characteristics and the low-frequency noise in high voltage 4H-SiC junction barrier Schottky diodes irradiated with high energy (15 MeV) protons were studied at different temperatures and irradiation doses Φ from 3 × 1012 cm-2 to 1 × 1014 cm-2. Irradiation led to the increase of the base resistance and the appearance of slow relaxation processes at small, V ≤ 0.2 V, and at rather high, V ≥ 2 V, forward voltages. The characteristic times of these relaxation processes ranged from ˜1 μs to 103 s. The exponential part of the current-voltage characteristic was only weakly affected by irradiation. The temperature dependence of the base resistance changed exponentially with temperature with activation energy Ea ˜ 0.6 eV, indicating that the Z1/2 level plays a dominant role in this process. The temperature increase also led to the increase of the ideality factor from 1.05 at 25 °C to 1.1 at 172 °C. At elevated temperatures and high forward voltages V > 2-4 V, the current voltage characteristics tend to be super-linear. It is concluded that at high voltages, the space charge limited current of majority carriers (electrons) and hole injection from the p-n regions play an important role in the formation of the current voltage characteristic. The frequency dependences of noise spectral density S of proton irradiated Schottky diodes have the unusual form of S ˜ 1/f 0.5.

  11. Optimal indium-gallium-nitride Schottky-barrier thin-film solar cells

    Science.gov (United States)

    Anderson, Tom H.; Lakhtakia, Akhlesh; Monk, Peter B.

    2017-08-01

    A two-dimensional model was developed to simulate the optoelectronic characteristics of indium-gallium-nitride (InξGa1-ξN), thin-film, Schottky-barrier-junction solar cells. The solar cell comprises a window designed to reduce the reflection of incident light, Schottky-barrier and ohmic front electrodes, an n-doped InξGa1-ξN wafer, and a metallic periodically corrugated back-reflector (PCBR). The ratio of indium to gallium in the wafer varies periodically in the thickness direction, and thus the optical and electrical constitutive properties of the alloy also vary periodically. This material nonhomogeneity could be physically achieved by varying the fractional composition of indium and gallium during deposition. Empirical models for indium nitride and gallium nitride, combined with Vegard's law, were used to calculate the optical and electrical constitutive properties of the alloy. The periodic nonhomogeneity aids charge separation and, in conjunction with the PCBR, enables incident light to couple to multiple surface plasmon-polariton waves and waveguide modes. The profile of the resulting chargecarrier-generation rate when the solar cell is illuminated by the AM1.5G spectrum was calculated using the rigorous coupled-wave approach. The steady-state drift-diffusion equations were solved using COMSOL, which employs finite-element methods, to calculate the current density as a function of the voltage. Mid-band Shockley- Read-Hall, Auger, and radiative recombination rates were taken to be the dominant methods of recombination. The model was used to study the effects of the solar-cell geometry and the shape of the periodic material nonhomogeneity on efficiency. The solar-cell efficiency was optimized using the differential evolution algorithm.

  12. InGaAs Schottky barrier diode array detectors integrated with broadband antenna (Conference Presentation)

    Science.gov (United States)

    Park, Dong Woo; Lee, Eui Su; Park, Jeong-Woo; Kim, Hyun-Soo; Lee, Il-Min; Park, Kyung Hyun

    2017-02-01

    Terahertz (THz) waves have been actively studied for the applications of astronomy, communications, analytical science and bio-technologies due to their low energy and high frequency. For example, THz systems can carry more information with faster rates than GHz systems. Besides, THz waves can be applied to imaging, sensing, and spectroscopy. Furthermore, THz waves can be used for non-destructive and non-harmful tomography of living objects. In this reasons, Schottky barrier diodes (SBD) have been widely used as a THz detector for their ultrafast carrier transport, high responsivity, high sensitivity, and excellent noise equivalent power. Furthermore, SBD detectors envisage developing THz applications at low cost, excellent capability, and high yield. Since the major concerns in the THz detectors for THz imaging systems are the realizations of the real-time image acquisitions via a reduced acquisition time, rather than the conventional raster scans that obtains an image by pixel-by-pixel acquisitions, a line-scan based systems utilizes an array detector with an 1 × n SBD array is preferable. In this study, we fabricated the InGaAs based SBD array detectors with broadband antennas of log-spiral and square-spiral patterns. To optimize leakage current and ideality factor, the dependence to the doping levels of ohmic and Schottky layers have been investigated. In addition, the dependence to the capacitance and resistance to anode size are also examined as well. As a consequence, the real-time THz imaging with our InGaAs SBD array detector have been successfully obtained.

  13. Self-powered flexible and transparent photovoltaic detectors based on CdSe nanobelt/graphene Schottky junctions

    Science.gov (United States)

    Gao, Zhiwei; Jin, Weifeng; Zhou, Yu; Dai, Yu; Yu, Bin; Liu, Chu; Xu, Wanjin; Li, Yanping; Peng, Hailin; Liu, Zhongfan; Dai, Lun

    2013-05-01

    Flexible and transparent electronic and optoelectronic devices have attracted more and more research interest due to their potential applications in developing portable, wearable, low-cost, and implantable devices. We have fabricated and studied high-performance flexible and transparent CdSe nanobelt (NB)/graphene Schottky junction self-powered photovoltaic detectors for the first time. Under 633 nm light illumination, typical photosensitivity and responsivity of the devices are about 1.2 × 105 and 8.7 A W-1, respectively. Under 3500 Hz switching frequency, the response and recovery times of them are about 70 and 137 μs, respectively, which, to the best of our knowledge, are the best reported values for nanomaterial based Schottky junction photodetectors up to date. The detailed properties of the photodetectors, such as the influences of incident light wavelength and light intensity on the external quantum efficiency and speed, are also investigated. Detailed discussions are made in order to understand the observed phenomena. Our work demonstrates that the self-powered flexible and transparent CdSe NB/graphene Schottky junction photovoltaic detectors have a bright application prospect.Flexible and transparent electronic and optoelectronic devices have attracted more and more research interest due to their potential applications in developing portable, wearable, low-cost, and implantable devices. We have fabricated and studied high-performance flexible and transparent CdSe nanobelt (NB)/graphene Schottky junction self-powered photovoltaic detectors for the first time. Under 633 nm light illumination, typical photosensitivity and responsivity of the devices are about 1.2 × 105 and 8.7 A W-1, respectively. Under 3500 Hz switching frequency, the response and recovery times of them are about 70 and 137 μs, respectively, which, to the best of our knowledge, are the best reported values for nanomaterial based Schottky junction photodetectors up to date. The detailed

  14. Insights into North Atlantic deep water formation during the peak interglacial interval of Marine Isotope Stage 9 (MIS 9)

    Science.gov (United States)

    Mokeddem, Zohra; McManus, Jerry F.

    2017-11-01

    Foraminifera abundance and stable isotope records from ODP Site 984 (61.25°N, 24.04°W, 1648 m) in the North Atlantic are used to reconstruct surface circulation variations and the relative strength of the North Atlantic Deep Water (NADW) formation over the period spanning the peak warmth of Marine Interglacial Stage (MIS) 9e ( 324-336 ka). This interval includes the preceding deglaciation, Termination 4 (T4), and the subsequent glacial inception of MIS 9d. The records indicate a greatly reduced contribution of NADW during T4, as observed in more recent deglaciations. In contrast with the most recent deglaciation, the lack of a significant NADW signal extended from T4 well into the peak interglacial MIS 9e and persisted nearly until the transition to the subsequent glacial stage MIS 9d. Although NADW formation resumed during MIS 9e, only depths greater than 2000 m appear to have been ventilated. The poorly ventilated intermediate depth of Site 984 (climatic optimum contrasts sharply with subsequent interglacial peaks (MIS 5e and the Holocene). Despite the perturbed intermediate depth circulation, oceanic heat transport northeastward was not interrupted and may have contributed to the relatively mild interglacial conditions of MIS 9e.

  15. Mis16 Independently Recognizes Histone H4 and the CENP-ACnp1-Specific Chaperone Scm3sp

    Energy Technology Data Exchange (ETDEWEB)

    An, Sojin; Kim, Hanseong; Cho, Uhn-Soo (Michigan-Med)

    2015-09-04

    CENP-A is a centromere-specific histone H3 variant that is required for kinetochore assembly and accurate chromosome segregation. For it to function properly, CENP-A must be specifically localized to centromeres. In fission yeast, Scm3sp and the Mis18 complex, composed of Mis16, Eic1, and Mis18, function as a CENP-ACnp1-specific chaperone and a recruiting factor, respectively, and together ensure accurate delivery of CENP-ACnp1 to centromeres. Although how Scm3sp specifically recognizes CENP-ACnp1 has been revealed recently, the recruiting mechanism of CENP-ACnp1 via the Mis18 complex remains unknown. In this study, we have determined crystal structures of Schizosaccharomyces japonicus Mis16 alone and in complex with the helix 1 of histone H4 (H4α1). Crystal structures followed by mutant analysis and affinity pull-downs have revealed that Mis16 recognizes both H4α1 and Scm3sp independently within the CENP-ACnp1/H4:Scm3sp complex. This observation suggests that Mis16 gains CENP-ACnp1 specificity by recognizing both Scm3sp and histone H4. Our studies provide insights into the molecular mechanisms underlying specific recruitment of CENP-ACnp1/H4:Scm3sp into centromeres.

  16. A Generalized Michaelis-Menten Equation in Protein Synthesis: Effects of Mis-Charged Cognate tRNA and Mis-Reading of Codon.

    Science.gov (United States)

    Dutta, Annwesha; Chowdhury, Debashish

    2017-05-01

    The sequence of amino acid monomers in the primary structure of a protein is decided by the corresponding sequence of codons (triplets of nucleic acid monomers) on the template messenger RNA (mRNA). The polymerization of a protein, by incorporation of the successive amino acid monomers, is carried out by a molecular machine called ribosome. We develop a stochastic kinetic model that captures the possibilities of mis-reading of mRNA codon and prior mis-charging of a tRNA. By a combination of analytical and numerical methods, we obtain the distribution of the times taken for incorporation of the successive amino acids in the growing protein in this mathematical model. The corresponding exact analytical expression for the average rate of elongation of a nascent protein is a 'biologically motivated' generalization of the Michaelis-Menten formula for the average rate of enzymatic reactions. This generalized Michaelis-Menten-like formula (and the exact analytical expressions for a few other quantities) that we report here display the interplay of four different branched pathways corresponding to selection of four different types of tRNA.

  17. The Valle di Manche section (Calabria, Southern Italy): A high resolution record of the Early-Middle Pleistocene transition (MIS 21-MIS 19) in the Central Mediterranean

    Science.gov (United States)

    Capraro, Luca; Ferretti, Patrizia; Macrì, Patrizia; Scarponi, Daniele; Tateo, Fabio; Fornaciari, Eliana; Bellini, Giulia; Dalan, Giorgia

    2017-06-01

    The on-land marine Valle di Manche section (Crotone Basin, Calabria, Southern Italy), one of the candidates to host the GSSP of the Middle Pleistocene (;Ionian;) Stage, preserves a manifold record of independent chronological, paleoclimatic and stratigraphic proxies that permit a straightforward correlation with marine and terrestrial reference records at the global scale. In particular, the section holds an excellent record of the Matuyama-Brunhes magnetic reversal, which occurs in the midst of Marine Isotope Stage (MIS) 19. We report on a complete revision of the section that improves dramatically the available dataset, especially in the stratigraphic interval straddling the Lower-Middle Pleistocene boundary. Our benthic δ18O record provides evidence that the Matuyama-Brunhes transition, the stratigraphic position of which is marked by a prominent tephra (the ;Pitagora ash;), occurred during full MIS 19, in agreement with many records worldwide. We obtained an age of 786.9 ± 5 ka for the Matuyama-Brunhes magnetic reversal and pinpointed the paleomagnetic transition of to a 3 cm-thick interval, indicating that the event was very fast. Since the section fulfills all the requirements to host the GSSP of the Ionian Stage, we propose that the boundary should be placed at the base of the ;Pitagora ash;, ca. 12.5 cm below the midpoint of the Matuyama-Brunhes reversal.

  18. Nondestructive imaging of buried interfaces in SiC and GaN Schottky contacts using scanning internal photoemission microscopy

    Science.gov (United States)

    Shiojima, Kenji; Yamamoto, Shingo; Kihara, Yuhei; Mishima, Tomoyoshi

    2015-04-01

    We demonstrate a nondestructive characterization of buried interfaces in metal/wide-bandgap semiconductor contacts by using scanning internal photoemission microscopy. For Ni/n-SiC contacts annealed at temperatures above 400 °C, a reduction of the Schottky barrier height owing to partial interfacial reaction was visualized. In Au/Ni/n-GaN contacts, upon annealing at 400 °C, thermal degradation from a scratch on the dot was observed. Forward current-voltage curves were reproduced by lowering the Schottky barrier height and the area of the reacted regions by using this method. The present imaging method exploits its nondestructive highly sensitive extinction for characterizing the contacts formed on wide-gap materials.

  19. Single-Event Effect Testing of the Cree C4D40120D Commercial 1200V Silicon Carbide Schottky Diode

    Science.gov (United States)

    Lauenstein, J.-M.; Casey, M. C.; Wilcox, E. P.; Kim, Hak; Topper, A. D.

    2014-01-01

    This study was undertaken to determine the single event effect (SEE) susceptibility of the commercial silicon carbide 1200V Schottky diode manufactured by Cree, Inc. Heavy-ion testing was conducted at the Texas A&M University Cyclotron Single Event Effects Test Facility (TAMU). Its purpose was to evaluate this device as a candidate for use in the Solar-Electric Propulsion flight project.

  20. Basic mechanisms study for MIS solar cell structures on GaAs

    Science.gov (United States)

    Fonash, S. J.

    1978-01-01

    The solar cell structure examined is the MIS configuration on (n) GaAs. The metal room temperature oxide/(n) GaAs materials system was studied. Metals with electronegativities varying from 2.4 (Au) to 1.5 (Al) were used as the upper electrode. The thinnest metallization that did not interfere with the measurement techniques (by introducing essentially transmission line series resistance problems across a device) was used. Photovoltaic response was not optimized.

  1. Sistem Pendukung Keputusan Kepuasan Layanan Mis Universitas Kanjuruhan Malang Menggunakan Metode Servqua

    OpenAIRE

    Wiji Setiyaningsih, Maya Fitri Asia/

    2017-01-01

    Management Information System (MIS) is service unit of computer network services and applications in Kanjuruhan University of Malang. Computer networks services include services of internet, local network and internet network trouble shooting while applications services is services of web, email, Ejournal, and SIAKAD. In decision support system using servqual method, there are 15 criteria classified in 5 dimensions e.g. tangible, empathy, responsiviness, reliability, assurance. Assesment ar...

  2. The MetaMIS approach for the specification of management views on business processes

    OpenAIRE

    Holten, Roland

    2001-01-01

    The specification of management views on business processes is a main development task in the requirements specification of reporting systems for the management. Today the information warehouse is the accepted IT architecture for this purpose. The paper summarises the state of the research on the so called MetaMIS Approach. The methodological background is discussed and the modelling language comprising the conceptual and the representational language aspects is specified. Guidance rules comp...

  3. Edgar Savisaar: valitsus ei taju, mis linnas ta valitseb / Edgar Savisaar ; interv. Hille Tänavsuu

    Index Scriptorium Estoniae

    Savisaar, Edgar, 1950-

    2007-01-01

    Ilmunud ka: Postimees : na russkom jazõke 15. nov. lk. 9. Tallinna linnapea vastab küsimustele, mis puudutavad Keskerakonna ainuvõimu Tallinnas, valimislubaduste täitmist, linnaelanike rahulolu, Keskerakonna toetust, pronksiöö sündmuste mõju Eesti majandusele, riigi ja linnavalitsuse suhteid, pealinna seadust, hüvede saamist linnavalitsuselt, tulevaste valimiste tulemusi. Lisa: Tallinna võim

  4. Inventory control with product returns: the impact of (mis)information

    OpenAIRE

    Brito, Marisa; Van Der Laan, Erwin

    2002-01-01

    textabstractProduct returns are often characterized by a dual uncertainty on time and quantity. In the literature on inventory management with product returns, best forecasts have been associated with methods that use the most informationregarding product return history. In practice however, data is often scarce and unreliable. In this paper we investigate the impact of (mis)information on inventory performance. An exact analysis shows that in case of misestimation the most informed method do...

  5. CdSe Nanowire-Based Flexible Devices: Schottky Diodes, Metal-Semiconductor Field-Effect Transistors, and Inverters.

    Science.gov (United States)

    Jin, Weifeng; Zhang, Kun; Gao, Zhiwei; Li, Yanping; Yao, Li; Wang, Yilun; Dai, Lun

    2015-06-24

    Novel CdSe nanowire (NW)-based flexible devices, including Schottky diodes, metal-semiconductor field-effect transistors (MESFETs), and inverters, have been fabricated and investigated. The turn-on voltage of a typical Schottky diode is about 0.7 V, and the rectification ratio is larger than 1 × 10(7). The threshold voltage, on/off current ratio, subthreshold swing, and peak transconductance of a typical MESFET are about -0.3 V, 4 × 10(5), 78 mV/dec, and 2.7 μS, respectively. The inverter, constructed with two MESFETs, exhibits clear inverting behavior with the gain to be about 28, 34, and 38, at the supply voltages (V(DD)) of 3, 5, and 7 V, respectively. The inverter also shows good dynamic behavior. The rising and falling times of the output signals are about 0.18 and 0.09 ms, respectively, under 1000 Hz square wave signals input. The performances of the flexible devices are stable and reliable under different bending conditions. Our work demonstrates these flexible NW-based Schottky diodes, MESFETs, and inverters are promising candidate components for future portable transparent nanoelectronic devices.

  6. Improvement of diode parameters in Al/n-Si Schottky diodes with Coronene interlayer using variation of the illumination intensity

    Science.gov (United States)

    Pakma, Osman; Çavdar, Şükrü; Koralay, Haluk; Tuğluoğlu, Nihat; Faruk Yüksel, Ömer

    2017-12-01

    In present work, Coronene thin films on Si wafer have been deposited by the spin coating method. It has been ultimately produced Al/Coronene/n-Si/In Schottky diode. Current-voltage (I-V) measurements have been used to determine the effect of illumination intensity in the Schottky diodes. The barrier height (ΦB) values increased as ideality factor (n) values decreased with a increase in illumination intensity. The ΦB values have been found to be 0.697 and 0.755 eV at dark and 100 mW/cm2, respectively. The n values have been found to be 2.81 and 2.07 at dark and 100 mW/cm2, respectively. Additionally, the series resistance (Rs) values from modified Norde method and interface state density (Nss) values using current-voltage measurements have been determined. The values of Rs have been found to be 1924 and 5094 Ω at dark and 100 mW/cm2, respectively. The values of Nss have been found to be 4.76 × 1012 and 3.15 × 1012 eV-1 cm-2 at dark and 100 mW/cm2, respectively. The diode parameters are improved by applying the variation of illumination intensity to the formed Schottky diodes.

  7. Magnetic field induced suppression of the forward bias current in Bi2Se3/Si Schottky barrier diodes

    Science.gov (United States)

    Jin, Haoming; Hebard, Arthur

    Schottky diodes formed by van der Waals bonding between freshly cleaved flakes of the topological insulator Bi2Se3 and doped silicon substrates show electrical characteristics in good agreement with thermionic emission theory. The motivation is to use magnetic fields to modulate the conductance of the topologically protected conducting surface state. This surface state in close proximity to the semiconductor surface may play an important role in determining the nature of the Schottky barrier. Current-voltage (I-V) and capacitance-voltage (C-V) characteristics were obtained for temperatures in the range 50-300 K and magnetic fields, both perpendicular and parallel to the interface, as high as 7 T. The I-V curve shows more than 6 decades linearity on semi-logarithmic plots, allowing extraction of parameters such as ideality (η), zero-voltage Schottky barrier height (SBH), and series resistance (Rs). In forward bias we observe a field-induced decrease in current which becomes increasingly more pronounced at higher voltages and lower temperature, and is found to be correlated with changes in Rs rather than other barrier parameters. A comparison of changes in Rs in both field direction will be made with magnetoresistance in Bi2Se3 transport measurement. The work is supported by NSF through DMR 1305783.

  8. Room temperature current-voltage (I-V) characteristics of Ag/InGaN/n-Si Schottky barrier diode

    Science.gov (United States)

    Erdoğan, Erman; Kundakçı, Mutlu

    2017-02-01

    Metal-semiconductors (MSs) or Schottky barrier diodes (SBDs) have a significant potential in the integrated device technology. In the present paper, electrical characterization of Ag/InGaN/n-Si Schottky diode have been systematically carried out by simple Thermionic method (TE) and Norde function based on the I-V characteristics. Ag ohmic and schottky contacts are deposited on InGaN/n-Si film by thermal evaporation technique under a vacuum pressure of 1×10-5 mbar. Ideality factor, barrier height and series resistance values of this diode are determined from I-V curve. These parameters are calculated by TE and Norde methods and findings are given in a comparetive manner. The results show the consistency for both method and also good agreement with other results obtained in the literature. The value of ideality factor and barrier height have been determined to be 2.84 and 0.78 eV at room temperature using simple TE method. The value of barrier height obtained with Norde method is calculated as 0.79 eV.

  9. Fabrication and characterization of magnetically tunable metal-semiconductor schottky diode using barium hexaferrite thin film on gold

    Science.gov (United States)

    Kaur, Jotinder; Sharma, Vinay; Sharma, Vipul; Veerakumar, V.; Kuanr, Bijoy K.

    2016-05-01

    Barium Hexaferrite (BaM) is an extensively studied magnetic material due to its potential device application. In this paper, we study Schottky junction diodes fabricated using gold and BaM and demonstrate the function of a spintronic device. Gold (50 nm)/silicon substrate was used to grow the BaM thin films (100-150 nm) using pulsed laser deposition. I-V characteristics were measured on the Au/BaM structure sweeping the voltage from ±5 volts. The forward and reverse bias current-voltage curves show diode like rectifying characteristics. The threshold voltage decreases while the output current increases with increase in the applied external magnetic field showing that the I-V characteristics of the BaM based Schottky junction diodes can be tuned by external magnetic field. It is also demonstrated that, the fabricated Schottky diode can be used as a half-wave rectifier, which could operate at high frequencies in the range of 1 MHz compared to the regular p-n junction diodes, which rectify below 10 kHz. In addition, it is found that above 1 MHz, Au/BaM diode can work as a rectifier as well as a capacitor filter, making the average (dc) voltage much larger.

  10. Structural, morphological, optical and electrical properties of Schottky diodes based on CBD deposited ZnO:Cu nanorods

    Science.gov (United States)

    Mwankemwa, Benard S.; Legodi, Matshisa J.; Mlambo, Mbuso; Nel, Jackie M.; Diale, Mmantsae

    2017-07-01

    Undoped and copper doped zinc oxide (ZnO) nanorods have been synthesized by a simple chemical bath deposition (CBD) method at a temperature of 90 °C. Structural, morphological, optical and electrical properties of the synthesized ZnO nanorods were found to be dependent on the Cu doping percentage. X-ray diffraction (XRD) patterns revealed strong diffraction peaks of hexagonal wurtzite of ZnO, and no impurity phases from metallic zinc or copper. Scanning electron microscopy (SEM) images showed changes in diameter and shape of nanorods, where by those doped with 2 at.% and 3 at.% aggregated and became compact. Selected area electron diffraction (SAED) patterns indicates high quality, single crystalline wurtzite structure ZnO and intensities of bright spots varied with copper doping concentration. UV-visible absorption peaks of ZnO red shifted with increasing copper doping concentration. Raman studies demonstrated among others, strong and sharp E2 (low) and E2 (high) optical phonon peaks confirming crystal structure of ZnO. Current-voltage measurements based on the gold/ZnO nanorods/ITO showed good rectifying behavior of the Schottky diode. The predicted Schottky barrier height of 0.60 eV was obtained which is not far from the theoretical Schottky-Mott value of 0.80 eV.

  11. Monolayer graphene film on ZnO nanorod array for high-performance Schottky junction ultraviolet photodetectors.

    Science.gov (United States)

    Nie, Biao; Hu, Ji-Gang; Luo, Lin-Bao; Xie, Chao; Zeng, Long-Hui; Lv, Peng; Li, Fang-Ze; Jie, Jian-Sheng; Feng, Mei; Wu, Chun-Yan; Yu, Yong-Qiang; Yu, Shu-Hong

    2013-09-09

    A new Schottky junction ultraviolet photodetector (UVPD) is fabricated by coating a free-standing ZnO nanorod (ZnONR) array with a layer of transparent monolayer graphene (MLG) film. The single-crystalline [0001]-oriented ZnONR array has a length of about 8-11 μm, and a diameter of 100∼600 nm. Finite element method (FEM) simulation results show that this novel nanostructure array/MLG heterojunction can trap UV photons effectively within the ZnONRs. By studying the I-V characteristics in the temperature range of 80-300 K, the barrier heights of the MLG film/ZnONR array Schottky barrier are estimated at different temperatures. Interestingly, the heterojunction diode with typical rectifying characteristics exhibits a high sensitivity to UV light illumination and a quick response of millisecond rise time/fall times with excellent reproducibility, whereas it is weakly sensitive to visible light irradiation. It is also observed that this UV photodetector (PD) is capable of monitoring a fast switching light with a frequency as high as 2250 Hz. The generality of the above results suggest that this MLG film/ZnONR array Schottky junction UVPD will have potential application in future optoelectronic devices. Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  12. Insights into the 'super'-interglacial MIS 11 from a Central European flowstone

    Science.gov (United States)

    Schäfer, David; Vollweiler, Nicole; Neumann, Thomas; Kluge, Tobias

    2017-04-01

    Given the scenarios of the expected short- and medium-term future Earth climate under anthropogenic influence the climate of past interglacials is of particular interest. In the year 2100 the climate may resemble the conditions of MIS 11, one of the warmest interglacials of the past million years. However, so far information on MIS 11 is sparse, comes mostly from marine or polar ice cores and has little continental contribution. In a cave system from southern Germany relatively large amounts of flowstone material from this interesting time period was discovered which may help to close parts of the knowledge gap. Preliminary results of this flowstone piece confirmed growth during most of MIS 11 (ca. 420-390 ka) with estimated rates of 1-10 μm/a and showed successions of clear and brownish layers that may enable proxy measurements with up to annual resolution. δ18O and δ13C values obtained with coarse resolution (averaging of several 100 years) show variations of less than 0.5 ‰ and are almost identical to Holocene calcite precipitated in the same cave system. The large amount of available flowstone material of this time period and region together with a sufficiently precise chronology (ICPMS U-Th measurements and layer counting) could provide a better understanding of natural variability in future high-resolution and multi-proxy studies. First results will be presented and next steps discussed.

  13. Transfer RNA: a dancer between charging and mis-charging for protein biosynthesis.

    Science.gov (United States)

    Zhou, Xiaolong; Wang, Enduo

    2013-10-01

    Transfer RNA plays a fundamental role in the protein biosynthesis as an adaptor molecule by functioning as a biological link between the genetic nucleotide sequence in the mRNA and the amino acid sequence in the protein. To perform its role in protein biosynthesis, it has to be accurately recognized by aminoacyl-tRNA synthetases (aaRSs) to generate aminoacyl-tRNAs (aa-tRNAs). The correct pairing between an amino acid with its cognate tRNA is crucial for translational quality control. Production and utilization of mis-charged tRNAs are usually detrimental for all the species, resulting in cellular dysfunctions. Correct aa-tRNAs formation is collectively controlled by aaRSs with distinct mechanisms and/or other trans-factors. However, in very limited instances, mis-charged tRNAs are intermediate for specific pathways or essential components for the translational machinery. Here, from the point of accuracy in tRNA charging, we review our understanding about the mechanism ensuring correct aa-tRNA generation. In addition, some unique mis-charged tRNA species necessary for the organism are also briefly described.

  14. MIS hot electron devices for enhancement of surface reactivity by hot electrons

    DEFF Research Database (Denmark)

    Thomsen, Lasse Bjørchmar

    A Metal-Insulator-Semiconductor (MIS) based device is developed for investigation of hot electron enhanced chemistry. A model of the device is presented explaining the key concepts of the functionality and the character- istics. The MIS hot electron emitter is fabricated using cleanroom technology...... is characterized using IV and CV measurements to extract tun- nel barrier thicknesses, which was distributed around the expected value of 50 ºA. CV measurements yield thicknesses between 44.7 ºA and 58 ºA. The IV and CV measurements is shown to correlate and an o®set between the two types of measurements indicate...... is monitored using the calibrated resistance of the metal layer. The MIS hot electron emitters are cleaned in-situ in a background pressure of 3 £ 10¡7 mbar O2. Thermal desorption experiments with labeled CO are carried out with a reproducibility of 7%. The detection limit of labeled CO for the mass...

  15. Response of the North Atlantic surface and intermediate ocean structure to climate warming of MIS 11

    Science.gov (United States)

    Kandiano, Evgenia S.; van der Meer, Marcel T. J.; Schouten, Stefan; Fahl, Kirsten; Sinninghe Damsté, Jaap S.; Bauch, Henning A.

    2017-04-01

    Investigating past interglacial climates not only help to understand how the climate system operates in general, it also forms a vital basis for climate predictions. We reconstructed vertical stratification changes in temperature and salinity in the North Atlantic for a period some 400 ka ago (MIS11), an interglacial time analogue of a future climate. As inferred from a unique set of biogeochemical, geochemical, and faunal data, the internal upper ocean stratification across MIS 11 shows distinct depth-dependent dynamical changes related to vertical as well as lateral shifts in the upper Atlantic meridional circulation system. Importantly, transient cold events are recognized near the end of the long phase of postglacial warming at surface, subsurface, mid, and deeper water layers. These data demonstrate that MIS 11 coolings over the North Atlantic were initially triggered by freshwater input at the surface and expansion of cold polar waters into the Subpolar Gyre. The cooling signal was then transmitted downwards into mid-water depths. Since the cold events occurred after the main deglacial phase we suggest that their cause might be related to continuous melting of the Greenland ice sheet, a mechanism that might also be relevant for the present and upcoming climate.

  16. Experimental creep behavior of porcine liver under indentation with laparoscopic grasper for MIS applications

    Directory of Open Access Journals (Sweden)

    Cheng-mo Cai

    2017-06-01

    Full Text Available Mechanical response of soft tissues behaved disparate due to fast and large deformation during surgical grasping, so there is a need for experimental databases of biomechanical characteristics of soft tissue under the contact of MIS tool, which are more useful for designing new surgical instruments, training inexperienced surgeons, improving surgical simulations and developing surgical robotics system. A novel indentation test to simulate the real-time surgical operation condition was present in this paper. The creep behavior of porcine liver in vitro was studied under uniaxial indentation by using MIS grasper. The nominal stress between the grasper and the liver was 0.02 to 0.1 MPa, the loading velocity was 1 to 3 mm/s, and the holding time was 300 s to simulate clamping tissue operation. Results showed that the creep process of the liver during 300 s of duration can be divided into three stages: loading stage I, transition creep stage II and steady creep stage III. The creep characteristic of liver behaves time-dependent, load-dependent and strongly loading velocity-dependent due to its nonlinear viscoelastic characteristics and hysteresis characteristics. These creep behavior might also be associated with the deformation, migration and biochemical reaction of the liver cells. The phenomenological model derived in this paper may describe the creep behavior of the liver. The results would provide experimental databases and phenomenological models for investigating biomechanical characteristics of soft tissue under the contact of MIS tool.

  17. Hyperelastic modelling and parametric study of soft tissue embedded lump for MIS applications.

    Science.gov (United States)

    Sokhanvar, S; Dargahi, J; Packirisamy, M

    2008-09-01

    The existing MIS (minimally invasive surgery) instruments have caused severe restrictions to surgeons' tactile perception. In particular, palpation, which is an important technique in open surgery to assess the softness of the tissue and to detect any hidden lumps, is entirely absent in MIS procedures. Many researchers have developed smart endoscopic graspers to rectify different aspects of this problem. However, the effect of an anatomical feature in general and a lump in particular on the stress distribution on the sensitive surfaces of the smart MIS graspers still needs a lot of attention. This paper investigates the effect of the important parameters of a lump on the stress distribution at the contact surface and subsequently the output of smart endoscopic graspers. Using experimental stress-strain compression test data, the material parameters required for the Mooney-Rivlin model were obtained and used in hyperelastic finite element analysis. The influence of size, depth and stiffness of the lump on the stress distribution at the contact surface are shown and discussed. The results of the non-linear finite element analysis were validated against experiments conducted on elastomeric material replicating soft tissue. The consistency between finite element analysis results and experimental work validates the developed model, which is based on the hyperelastic formulation. The finite element analysis results obtained in this study are particularly useful for the development of an inverse model. The inverse model would extract fundamental information, such as size, depth and stiffness, of any hidden lump, using the outputs of the sensors.

  18. Noise characterization of enhancement-mode AlGaN graded barrier MIS-HEMT devices

    Science.gov (United States)

    Mohanbabu, A.; Saravana Kumar, R.; Mohankumar, N.

    2017-12-01

    This paper reports a systematic theoretical study on the microwave noise performance of graded AlGaN/GaN metal-insulator semiconductor high-electron mobility transistors (MIS-HEMTs) built on an Al2O3 substrate. The HfAlOx/AlGaN/GaN MIS-HEMT devices designed for this study show an outstanding small signal analog/RF and noise performance. The results on 1 μm gate length device show an enhancement mode operation with threshold voltage, VT = + 5.3 V, low drain leakage current, Ids,LL in the order of 1 × 10-9 A/mm along with high current gain cut-off frequency, fT of 17 GHz and maximum oscillation frequency fmax of 47 GHz at Vds = 10 V. The device Isbnd V and low-frequency noise estimation of the gate and drain noise spectral density and their correlation are evaluated using a Green's function method under different biasing conditions. The devices show a minimum noise figure (NFmin) of 1.053 dB in combination with equivalent noise resistance (Rn) of 23 Ω at 17 GHz, at Vgs = 6 V and Vds = 5 V which is relatively low and is suitable for broad-band low-noise amplifiers. This study shows that the graded AlGaN MIS-HEMT with HfAlOX gate insulator is appropriate for application requiring high-power and low-noise.

  19. Atmospheric CO2 variations on millennial-scale during MIS 6

    Science.gov (United States)

    Shin, Jinhwa; Grilli, Roberto; Chappellaz, Jérôme; Teste, Grégory; Nehrbass-Ahles, Christoph; Schmidely, Loïc; Schmitt, Jochen; Stocker, Thomas; Fischer, Hubertus

    2017-04-01

    Understanding natural carbon cycle / climate feedbacks on various time scales is highly important for predicting future climate changes. Paleoclimate records of Antarctic temperatures, relative sea level and foraminiferal isotope and pollen records in sediment cores from the Portuguese margin have shown climate variations on millennial time scale over the Marine Isotope Stage 6 (MIS 6; from approximately 135 to 190 kyr BP). These proxy data suggested iceberg calving in the North Atlantic result in cooling in the Northern hemisphere and warming in Antarctica by changes in the Atlantic Meridional Overturning Circulation, which is explained by a bipolar see-saw trend in the ocean (Margari et al., 2010). Atmospheric CO2 reconstruction from Antarctic ice cores can provide key information on how atmospheric CO2 concentrations are linked to millennial-scale climate changes. However, existing CO2 records cannot be used to address this relationship because of the lack of suitable temporal resolution. In this work, we will present a new CO2 record with an improved time resolution, obtained from the Dome C ice core (75˚ 06'S, 123˚ 24'E) spanning the MIS 6 period, using dry extraction methods. We will examine millennial-scale features in atmospheric CO2, and their possible links with other proxies covering MIS 6. Margari, V., Skinner, L. C., Tzedakis, P. C., Ganopolski, A., Vautravers, M., and Shackleton, N. J.: The nature of millennial scale climate variability during the past two glacial periods, Nat.Geosci., 3, 127-131, 2010.

  20. Duodenal Atresia: Open versus MIS Repair—Analysis of Our Experience over the Last 12 Years

    Directory of Open Access Journals (Sweden)

    Salvatore Fabio Chiarenza

    2017-01-01

    Full Text Available Objective. Duodenal atresia (DA routinely has been corrected by laparotomy and duodenoduodenostomy with excellent long-term results. We revisited the patients with DA treated in the last 12 years (2004–2016 comparing the open and the minimally invasive surgical (MIS approach. Methods. We divided our cohort of patients into two groups. Group 1 included 10 patients with CDO (2004–09 treated with open procedure: 5, DA; 3, duodenal web; 2, extrinsic obstruction. Three presented with Down’s syndrome while 3 presented with concomitant malformations. Group 2 included 8 patients (2009–16: 1, web; 5, DA; 2, extrinsic obstruction. Seven were treated by MIS; 1 was treated by Endoscopy. Three presented with Down’s syndrome; 3 presented with concomitant malformations. Results. Average operating time was 120 minutes in Group 1 and 190 minutes in Group 2. In MIS Group the visualization was excellent. We recorded no intraoperative complications, conversions, or anastomotic leakage. Feedings started on 3–7 postoperative days. Follow-up showed no evidence of stricture or obstruction. In Group 1 feedings started within 10–22 days and we have 1 postoperative obstruction. Conclusions. Laparoscopic repair of DA is one of the most challenging procedures among pediatric laparoscopic procedures. These patients had a shorter length of hospitalization and more rapid advancement to full feeding compared to patients undergoing the open approach. Laparoscopic repair of DA could be the preferred technique, safe, and efficacious, in the hands of experienced surgeons.

  1. Oceanic response to changes in the WAIS and astronomical forcing during the MIS31 superinterglacial

    Directory of Open Access Journals (Sweden)

    F. Justino

    2017-09-01

    Full Text Available Marine Isotope Stage 31 (MIS31, between 1085 and 1055 ka was characterized by higher extratropical air temperatures and a substantial recession of polar glaciers compared to today. Paleoreconstructions and model simulations have increased the understanding of the MIS31 interval, but questions remain regarding the role of the Atlantic and Pacific oceans in modifying the climate associated with the variations in Earth's orbital parameters. Multi-century coupled climate simulations, with the astronomical configuration of the MIS31 and modified West Antarctic Ice Sheet (WAIS topography, show an increase in the thermohaline flux and northward oceanic heat transport (OHT in the Pacific Ocean. These oceanic changes are driven by anomalous atmospheric circulation and increased surface salinity in concert with a stronger meridional overturning circulation (MOC. The intensified northward OHT is responsible for up to 85 % of the global OHT anomalies and contributes to the overall reduction in sea ice in the Northern Hemisphere (NH due to Earth's astronomical configuration. The relative contributions of the Atlantic Ocean to global OHT and MOC anomalies are minor compared to those of the Pacific. However, sea ice changes are remarkable, highlighted by decreased (increased cover in the Ross (Weddell Sea but widespread reductions in sea ice across the NH.

  2. Oceanic response to changes in the WAIS and astronomical forcing during the MIS31 superinterglacial

    Science.gov (United States)

    Justino, Flavio; Lindemann, Douglas; Kucharski, Fred; Wilson, Aaron; Bromwich, David; Stordal, Frode

    2017-09-01

    Marine Isotope Stage 31 (MIS31, between 1085 and 1055 ka) was characterized by higher extratropical air temperatures and a substantial recession of polar glaciers compared to today. Paleoreconstructions and model simulations have increased the understanding of the MIS31 interval, but questions remain regarding the role of the Atlantic and Pacific oceans in modifying the climate associated with the variations in Earth's orbital parameters. Multi-century coupled climate simulations, with the astronomical configuration of the MIS31 and modified West Antarctic Ice Sheet (WAIS) topography, show an increase in the thermohaline flux and northward oceanic heat transport (OHT) in the Pacific Ocean. These oceanic changes are driven by anomalous atmospheric circulation and increased surface salinity in concert with a stronger meridional overturning circulation (MOC). The intensified northward OHT is responsible for up to 85 % of the global OHT anomalies and contributes to the overall reduction in sea ice in the Northern Hemisphere (NH) due to Earth's astronomical configuration. The relative contributions of the Atlantic Ocean to global OHT and MOC anomalies are minor compared to those of the Pacific. However, sea ice changes are remarkable, highlighted by decreased (increased) cover in the Ross (Weddell) Sea but widespread reductions in sea ice across the NH.

  3. Construct validation of the ProMIS simulator using a novel laparoscopic suturing task.

    Science.gov (United States)

    Van Sickle, K R; McClusky, D A; Gallagher, A G; Smith, C D

    2005-09-01

    The use of simulation for minimally invasive surgery (MIS) skills training has many advantages over current traditional methods. One advantage of simulation is that it enables an objective assessment of technical performance. The purpose of this study was to determine whether the ProMIS augmented reality simulator could objectively distinguish between levels of performance skills on a complex laparoscopic suturing task. Ten subjects--five laparoscopic experts and five laparoscopic novices--were assessed for baseline perceptual, visio-spatial, and psychomotor abilities using validated tests. After three trials of a novel laparoscopic suturing task were performed on the simulator, measures for time, smoothness of movement, and path distance were analyzed for each trial. Accuracy and errors were evaluated separately by two blinded reviewers to an interrater reliability of >0.8. Comparisons of mean performance measures were made between the two groups using a Mann-Whitney U test. Internal consistency of ProMIS measures was assessed with coefficient alpha. The psychomotor performance of the experts was superior at baseline assessment (p technical skills.

  4. Minimizing and quantifying mis-indexing in electron backscatter diffraction (EBSD) determinations of antigorite crystal directions

    Science.gov (United States)

    Nagaya, Takayoshi; Wallis, Simon R.; Seto, Yusuke; Miyake, Akira; Soda, Yusuke; Uehara, Seiichiro; Matsumoto, Megumi

    2017-02-01

    Antigorite is common in hydrated mantle domains and commonly shows strong alignment either due to deformation or growth in a preferred orientation. The alignment of antigorite imparts a strong anisotropy to the host rock affecting physical properties. A quantitative analysis of how antigorite affects these properties requires a reliable measurement of the crystallographic preferred orientation of antigorite, and EBSD analysis is the most widely used technique. Potential problems include (i) mis-indexing, which can add significant uncertainties to the results; and (ii) sample preparation, which may affect the measured CPO in particular for automated mapping. Combining results derived from X-ray goniometry, EBSD and U-stage techniques with FIB-TEM analysis leads to the following conclusions concerning these two issues. (i) There is a significant issue with mis-indexing a- and b-axes due to rotational similarities about the c-axis. Similar problems may also affect the c-axes measurements but this is less significant than the a- and b-axes when data are filtered using lower MAD values. Filtering using MAD values of <0.7° can significantly change the resulting CPO. (ii) Sample preparation can also affect the measured CPO: sections prepared parallel to the foliation show only minor differences with MAD values of <2.0°. Mis-indexing problems can be minimized by using an MAD value of <0.7° and analysing thin sections cut parallel to the foliation.

  5. Andrew Smith: peame leidma tee majanduskasvuni, mis põhineb säästmisel, investeeringutel ja ekspordil / Andrew Smith

    Index Scriptorium Estoniae

    Smith, Andrew

    2010-01-01

    KPMG (UK) peaökonomist Andrew Smith vastab küsimustele, mis puudutavad majanduskriisi tekkimist, olukorra paranemist, majandusolukorda Suurbritannias, erinevusi Euroopa ja muude maailma piirkondade vahel, sarnasusi Eesti ja Suurbritannia majandusolukorra vahel ning prognoose edaspidiste arengute osas

  6. ON CODE REFACTORING OF THE DIALOG SUBSYSTEM OF CDSS PLATFORM FOR THE OPEN-SOURCE MIS OPENMRS

    Directory of Open Access Journals (Sweden)

    A. V. Semenets

    2016-08-01

    The open-source MIS OpenMRS developer tools and software API are reviewed. The results of code refactoring of the dialog subsystem of the CDSS platform which is made as module for the open-source MIS OpenMRS are presented. The structure of information model of database of the CDSS dialog subsystem was updated according with MIS OpenMRS requirements. The Model-View-Controller (MVC based approach to the CDSS dialog subsystem architecture was re-implemented with Java programming language using Spring and Hibernate frameworks. The MIS OpenMRS Encounter portlet form for the CDSS dialog subsystem integration is developed as an extension. The administrative module of the CDSS platform is recreated. The data exchanging formats and methods for interaction of OpenMRS CDSS dialog subsystem module and DecisionTree GAE service are re-implemented with help of AJAX technology via jQuery library

  7. 77 FR 72905 - Pipeline Safety: Random Drug Testing Rate; Contractor MIS Reporting; and Obtaining DAMIS Sign-In...

    Science.gov (United States)

    2012-12-06

    ... From the Federal Register Online via the Government Publishing Office DEPARTMENT OF TRANSPORTATION Pipeline and Hazardous Materials Safety Administration Pipeline Safety: Random Drug Testing Rate; Contractor MIS Reporting; and Obtaining DAMIS Sign-In Information AGENCY: Pipeline and Hazardous Materials...

  8. Bridging Small Molecules to Modified Bacterial Microparticles Using a Disulphide Linkage: MIS416 as a Cargo Delivery System.

    Directory of Open Access Journals (Sweden)

    Francesco Mainini

    Full Text Available MIS416 is an intact minimal cell wall skeleton derived from Proprionibacterium acnes that is phagocytosed by antigen presenting cells, including dendritic cells (DCs. This property allows MIS416 to be exploited as a vehicle for the delivery of peptide antigens or other molecules (for example, nucleic acids to DCs. We previously showed that covalent (non-cleavable conjugation of OVA, a model antigen derived from ovalbumin, to MIS416 enhanced immune responses in DCs in vivo, compared to unconjugated MIS416 and OVA. Intracellular trafficking promotes the lysosomal degradation of MIS416, leading to the destruction of MIS416 plus the associated cargos conjugated to MIS416. However, lysosomal degradation of cargo may not be desired for some MIS416 conjugates. Here we have investigated whether a cleavable linkage could facilitate release of the cargo in the cytoplasm of DCs to avoid lysosomal degradation. DCs were treated in vitro with disulfide-containing conjugates, and as hypothesised faster release of SIINFEKL peptide in the cytoplasm of DCs was observed with the inclusion of a disulfide bond between MIS416 and cargo. The inclusion of a cleavable disulfide bond in the conjugates did not significantly alter the amount of SIINFEKL antigens presented on MHC I molecules on DCs as compared with conjugates without a disulfide bond. However, the conjugates containing disulfide-linkages performed either slightly better (p<0.05 than, or the same as conjugates without a disulfide bond with respect to in vitro OT-1 T-cell proliferation induced by the presentation of SIINFEKL antigens on DCs, or DC activation studies, respectively. However, disulfide-containing conjugates were less effective than conjugates without a disulfide bond in in vivo cytotoxicity assays. In conclusion, inclusion of a disulfide bond in MIS416-peptide conjugates was associated with efficient release of peptides in the cytoplasm of DCs, an important consideration for MIS416-mediated

  9. Non-invasively improving the Schottky barriers of metal-MoS2 interfaces: effects of atomic vacancies in a BN buffer layer.

    Science.gov (United States)

    Su, Jie; Feng, Liping; Liu, Siyang; Liu, Zhengtang

    2017-08-09

    Using first-principles calculations within density functional theory, vacancies in the BN buffer layer have been predicted to improve the Schottky barrier of the metal-MoS2 interface without deteriorating the intrinsic properties of the MoS2 layer. Here, the effects of concentrations, sizes and types of vacancies on the contact properties of metal/BN-MoS2 sandwich interfaces are comparatively studied. The results show that vacancies in the BN buffer layer not only don't deteriorate the charge scatterings and electronic properties of the MoS2 layer at the metal/BN-MoS2 interface, but also improve the charge density and contact resistance between the metal surface and the BN layer. Although these vacancies have a negligible influence on the Fermi level pinning effect of the metal/BN-MoS2 interface, both N-vacancies and B-vacancies significantly change the position of the Fermi level of the metal/BN-MoS2 interface and then tune the Schottky barriers. Moreover, the Schottky barriers of metal/BN-MoS2 interfaces can decrease at first with the increasing concentrations and sizes of vacancies. When the concentration of vacancies increases to 4%, the Schottky barriers of metal/BN-MoS2 interfaces can reduce to the minimum value. The lowest n-type and p-type Schottky barriers of Au/BN-MoS2 and Pt/BN-MoS2 interfaces can reduce to -0.16 and 0.28 eV, respectively. However, the Schottky barriers are deteriorated when the sizes and concentrations of vacancies continue to increase because vacancies with large sizes and concentrations obviously change the interfacial structures of metal/BN-MoS2 interfaces and disarrange the directions of interface dipoles. The predictions in this work provide a non-invasive method to achieve high performance metal-MoS2 interfaces with low Schottky barriers.

  10. Mis tuleb

    Index Scriptorium Estoniae

    2008-01-01

    12. III avatakse Eesti Põllumajandusmuuseumi rohelises saalis Raine A. Sahrmani fotonäitus "Looduse värvid". Tartu, Tallinna ja Pärnu niplispitsi tegijate tööde näitus Tartumaa muuseumis kuni 15. III, 8. III töötuba, juhendab Angelika Nöps. 24. III avatakse Iisaku muuseumis põllenäitus, mille eksponaadid on pärit muuseumi kogudest ja eraisikutelt. 26. III avatakse Viljandi muuseumis näitus Hilja Rieti postkaartidest

  11. Mis tuleb

    Index Scriptorium Estoniae

    2004-01-01

    Säästva Renoveerimise Infokeskuses Tallinnas Liivalaia 19a 4. XI vanade uste kordategemise ja 27. XI vana mööbli korrastamise ja restaureerimise töötuba; Tallinnas Väike-Patarei 3 insener Heino Uuetalu loengud: 11. XI "Vanade majade soklikorruste korrashoid ja renoveerimine", 25. XI "Vanade majade välisseinte, vahelagede, pööningute renoveerimine ja korrashoid". Tartu Kunstimajas Eesti Nahakunstnike Liidu korraldatud ehtenäitus "Ehe on teade maailmale meist endist". Viinistu Kunstimuuseumi tünnigaleriis Aarne Vasara mälestusnäitus. Viljandi Muuseumis näitus "Meleski klaas", mille koostasid Urmas Leemet, Heiti Hakmann ja Ville Dreving

  12. Mis tuleb

    Index Scriptorium Estoniae

    2006-01-01

    6. detsembrist Valga muuseumis näitus "Vaiba võlu ja valu". 13. detsembrist Tartu mänguasjamuuseumis suur päkapikunäitus. 15. detsembrini Saaremaa muuseumis Pennsylvania ülikooli arhitektuuriarhiivi koostatud näitus "Louis Kahn 100".

  13. Mis tuleb

    Index Scriptorium Estoniae

    2005-01-01

    2.-3. IX Meremäe savipäevad. Kuni 3. IX Valga muuseumis avatud näitusel "Riho ja Kristel" on väljas klaasikunstnike Riho Hüti lõikevitraažid ning Kristel Kallau klaasist pisiplastika ja installatsioonid. 8. septembrist Eesti Rahva Muuseumis eesti amatöörfotograafide näitus "Inimnäoline islam". Kuni 15. IX Eesti Põllumajandusmuuseumis Ülenurmel Tan Silliksaare ja Tõnu Lingi fotonäitus "Maameeste maastikud"

  14. Mis tuleb

    Index Scriptorium Estoniae

    2008-01-01

    1.-5. X korraldab Eesti Maaülikool konverentsi "21. sajandi park Ida-Euroopas - varemetest uuestisünnini". 4. X on ekskursioon Viljandimaa mõisaparkidesse, 5. X Kadrioru pargis. 2. X avatakse Kohila vallamajas Ehalill Halliste juubelinäitus ja esitletakse tema raamatut "Hingega siin". Kuni 12. X Eesti Tarbekunsti- ja Disainimuuseumis näitus "Kannud", Austraalias elava eestlannaa Maiju Altpere-Woodheadi portselaninäitus "Mälu vari" ja Ene Parsi rahvuslikes mustrites lapitehnikas kattevaipade näitus "Täiesti uus". Kuni 3. XI Tallinna Linnamuuseumis näitus "Eesti rahvuslik nahakunst 1918-1940"

  15. Mis tuleb

    Index Scriptorium Estoniae

    2007-01-01

    2.-8. VII kunstinädal "Kultuurikatapuldid 2007" Haapsalus. 7. VII-3. VIII Haapsalu klaasipäevad. 9.-14. VII Järvamaa kangakudujate päevad Sõrandus. Kuni 22. VII Järvakandi Klaasimuuseumis Mark Anguse meistriklassi klaasimaalide näitus "Maalitud muinaslood"

  16. Mis tuleb

    Index Scriptorium Estoniae

    2007-01-01

    5. VIII Haapsalu salli päev kuursaalis. 6.-11. VIII Järvakandis puusümpoosion "Puu 2007" ja Mädapea mõisas rahvusvaheline skulptorite sümpoosion. 8.-11. VIII XI rahvusvahelised puupäevad "Varbola puu 2007". 9. VIII IV Sõru käsitöö- ja kunstipäevad. 10. VIII Järvakandi klaasimuuseumis II klaasipäevad

  17. GaN-based Schottky barrier ultraviolet photodetectors with graded doping on patterned sapphire substrates

    Science.gov (United States)

    Mou, Wenjie; Zhao, Linna; Chen, Leilei; Yan, Dawei; Ma, Huarong; Yang, Guofeng; Gu, Xiaofeng

    2017-07-01

    In this paper, we demonstrate high performance GaN-based Schottky-barrier ultraviolet (UV) photodetectors with graded doping prepared on patterned sapphire substrates. The fabricated devices exhibit an extremely low dark current density of ∼1.3 × 10-8 A/cm2 under -5 V bias, a large UV-to-visible light rejection ratio of ∼4.2 × 103, and a peak external quantum efficiency of ∼50.7% at zero bias. Even in the deeper 250-360 nm range, the average external quantum efficiency still remains ∼40%. From the transient response characteristics, the average rising and falling time constants are estimated ∼115 μs and 120 μs, respectively, showing a good electrical and thermal reliability. The specific detectivities D∗, limited by the thermal equilibrium noise and the low-frequency 1/f noise, are derived ∼5.5 × 1013 cm Hz1/2/W (at 0 V) and ∼2.68 × 1010 cm Hz1/2 W-1 (at -5 V), respectively.

  18. Schottky Barrier Height of Pd/MoS2 Contact by Large Area Photoemission Spectroscopy.

    Science.gov (United States)

    Dong, Hong; Gong, Cheng; Addou, Rafik; McDonnell, Stephen; Azcatl, Angelica; Qin, Xiaoye; Wang, Weichao; Wang, Weihua; Hinkle, Christopher L; Wallace, Robert M

    2017-11-08

    MoS2, as a model transition metal dichalcogenide, is viewed as a potential channel material in future nanoelectronic and optoelectronic devices. Minimizing the contact resistance of the metal/MoS2 junction is critical to realizing the potential of MoS2-based devices. In this work, the Schottky barrier height (SBH) and the band structure of high work function Pd metal on MoS2 have been studied by in situ X-ray photoelectron spectroscopy (XPS). The analytical spot diameter of the XPS spectrometer is about 400 μm, and the XPS signal is proportional to the detection area, so the influence of defect-mediated parallel conduction paths on the SBH does not affect the measurement. The charge redistribution by Pd on MoS2 is detected by XPS characterization, which gives insight into metal contact physics to MoS2 and suggests that interface engineering is necessary to lower the contact resistance for the future generation electronic applications.

  19. Ambient organic molecular passivation of Si yields near-ideal, Schottky-Mott limited, junctions

    Science.gov (United States)

    Har-Lavan, Rotem; Yaffe, Omer; Joshi, Pranav; Kazaz, Roy; Cohen, Hagai; Cahen, David

    2012-03-01

    We report near-perfect transfer of the electrical properties of oxide-free Si surface, modified by a molecular monolayer, to the interface of a junction made with that modified Si surface. Such behavior is highly unusual for a covalent, narrow bandgap semiconductor, such as Si. Short, ambient atmosphere, room temperature treatment of oxide-free Si(100) in hydroquinone (HQ)/alkyl alcohol solutions, fully passivates the Si surface, while allowing controlled change of the resulting surface potential. The junctions formed, upon contacting such surfaces with Hg, a metal that does not chemically interact with Si, follow the Schottky-Mott model for metal-semiconductor junctions closer than ever for Si-based junctions. Two examples of such ideal behavior are demonstrated: a) Tuning the molecular surface dipole over 400 mV, with only negligible band bending, by changing the alkyl chain length. Because of the excellent passivation this yields junctions with Hg with barrier heights that follow the change in the Si effective electron affinity nearly ideally. b) HQ/ methanol passivation of Si is accompanied by a large surface dipole, which suffices, as interface dipole, to drive the Si into strong inversion as shown experimentally via its photovoltaic effect. With only ˜0.3 nm molecular interlayer between the metal and the Si, our results proves that it is passivation and prevention of metal-semiconductor interactions that allow ideal metal-semiconductor junction behavior, rather than an insulating transport barrier.

  20. Outstanding gas sensing performance of CuO-CNTs nanocomposite based on asymmetrical schottky junctions

    Science.gov (United States)

    Zhao, Yiming; Ikram, Muhammad; Zhang, Jiawei; Kan, Kan; Wu, Hongyuan; Song, Wanzhen; Li, Li; Shi, Keying

    2018-01-01

    To fabricate a high-performance material for sensor devices at room temperature and further improve the synthetic approach of sensing materials, one dimensional (1D) CuO-CNTs nanocomposites were prepared with CNTs and CuO nanorods (NRs) via a facile reflux method. The 1D composite with the molar ratio of CuO and CNTs at 2.4:1 displays excellent gas sensing performance, i.e. the lowest detectable limit of 970 ppb and the short response time of 6 s-97.0 ppm NO2 at room temperature. In the 1D composite, the CNTs part provides a channel to enable effective and fast carrier transport, while the CuO NRs fabricates an asymmetrical schottky contact at the interface between the composites and the Au electrode. The advantage of the synergy of CNTs and CuO which possesses superior conductivity benefits the sensing of our 1D CuO-CNTs composite by providing affluent electrons.

  1. Unbiased continuous wave terahertz photomixer emitters with dis-similar Schottky barriers.

    Science.gov (United States)

    Mohammad-Zamani, Mohammad Javad; Moravvej-Farshi, Mohammad Kazem; Neshat, Mohammad

    2015-07-27

    We are introducing a new bias free CW terahertz photomixer emitter array. Each emitter consists of an asymmetric metal-semiconductor-metal (MSM) that is made of two side by side dis-similar Schottky contacts, on a thin layer of low temperature grown (LTG) GaAs, with barrier heights of difference (ΔΦ(B)) and a finite lateral spacing (s). Simulations show that when an appropriately designed structure is irradiated by two coherent optical beams of different center wavelengths, whose frequency difference (∆f) falls in a desired THz band, the built-in field between the two dis-similar potential barriers can accelerate the photogenerated carriers that are modulated by ∆ω, making each pitch in the array to act as a CW THz emitter, effectively. We also show the permissible values of s and ΔΦ(B) pairs, for which the strengths of the built-in electric field maxima fall below that of the critical of 50 V/μm- i.e., the breakdown limit for the LTG-GaAs layer. Moreover, we calculate the THz radiation power per emitter in an array. Among many potential applications for these bias free THz emitters their use in endoscopic imaging without a need for hazardous external biasing circuitry that reduces the patient health risk, could be the most important one. A hybrid numerical simulation method is used to design an optimum emitter pitch, radiating at 0.5 THz.

  2. Self-assembled H-aggregation induced high performance poly (3-hexylthiophene) Schottky diode

    Science.gov (United States)

    Chaudhary, Vivek; Pandey, Rajiv K.; Prakash, Rajiv; Singh, Arun Kumar

    2017-12-01

    The investigation of size confinement and chain orientation within the microstructure of a polymer thin film is very important for electronic device applications and fundamental research. Here, we present single step methodology for the synthesis of solution-processable poly (3-hexylthiophene) (P3HT) nanofibers via a self-assembly process. The formation of P3HT nanofibers is confirmed by atomic force microscopy. The synthesized nanofibers are characterized by UV-visible absorption, photoluminescence, and Raman spectroscopy. The aggregation type of self-assembled P3HT is studied by both UV-visible absorbance and photoluminescence spectroscopy. The exciton bandwidth in polymer films is calculated by following the Spano's H-aggregate model and found to be 28 meV. Raman spectroscopy is used to identify the various stretching modes present in nanofibers. The structural investigation using grazing angle X-ray diffraction of nanofibers reveals the presence of alkyl chain ordering. We have fabricated organic Schottky diodes with P3HT nanofibers on indium tin oxide (ITO) coated glass with configuration Al/P3HT/ITO, and current density-voltage characteristics are subsequently used for extracting the electronic parameters of the device. We have also discussed the charge transport mechanism at the metal/polymer interface.

  3. Synthesis of Peripherally Tetrasubstituted Phthalocyanines and Their Applications in Schottky Barrier Diodes

    Directory of Open Access Journals (Sweden)

    Semih Gorduk

    2017-01-01

    Full Text Available New metal-free and metallophthalocyanine compounds (Zn, Co, Ni, and Cu were synthesized using 2-hydroxymethyl-1,4-benzodioxan and 4-nitrophthalonitrile compounds. All newly synthesized compounds were characterized by elemental analysis, FT-IR, UV-Vis, 1H-NMR, MALDI-TOF MS, and GC-MS techniques. The applications of synthesized compounds in Schottky barrier diodes were investigated. Ag/Pc/p–Si structures were fabricated and charge transport mechanism in these devices was investigated using dc technique. It was observed from the analysis of the experimental results that the charge transport can be described by Ohmic conduction at low values of the reverse bias. On the other hand, the voltage dependence of the measured current for high values of the applied reverse bias indicated that space charge limited conduction is the dominant mechanism responsible for dc conduction. From the observed voltage dependence of the current density under forward bias conditions, it has been concluded that the charge transport is dominated by Poole-Frenkel emission.

  4. Light-Responsive Ion-Redistribution-Induced Resistive Switching in Hybrid Perovskite Schottky Junctions

    KAUST Repository

    Guan, Xinwei

    2017-11-23

    Hybrid Perovskites have emerged as a class of highly versatile functional materials with applications in solar cells, photodetectors, transistors, and lasers. Recently, there have also been reports on perovskite-based resistive switching (RS) memories, but there remain open questions regarding device stability and switching mechanism. Here, an RS memory based on a high-quality capacitor structure made of an MAPbBr3 (CH3NH3PbBr3) perovskite layer sandwiched between Au and indium tin oxide (ITO) electrodes is reported. Such perovskite devices exhibit reliable RS with an ON/OFF ratio greater than 103, endurance over 103 cycles, and a retention time of 104 s. The analysis suggests that the RS operation hinges on the migration of charged ions, most likely MA vacancies, which reversibly modifies the perovskite bulk transport and the Schottky barrier at the MAPbBr3/ITO interface. Such perovskite memory devices can also be fabricated on flexible polyethylene terephthalate substrates with high bendability and reliability. Furthermore, it is found that reference devices made of another hybrid perovskite MAPbI3 consistently exhibit filament-type switching behavior. This work elucidates the important role of processing-dependent defects in the charge transport of hybrid perovskites and provides insights on the ion-redistribution-based RS in perovskite memory devices.

  5. Exploring New Mechanisms for Effective Antimicrobial Materials: Electric Contact-Killing Based on Multiple Schottky Barriers.

    Science.gov (United States)

    de Lucas-Gil, Eva; Reinosa, Julián J; Neuhaus, Kerstin; Vera-Londono, Liliana; Martín-González, Marisol; Fernández, José F; Rubio-Marcos, Fernando

    2017-08-09

    The increasing threat of multidrug-resistance organisms is a cause for worldwide concern. Progressively microorganisms become resistant to commonly used antibiotics, which are a healthcare challenge. Thus, the discovery of new antimicrobial agents or new mechanisms different from those used is necessary. Here, we report an effective and selective antimicrobial activity of microstructured ZnO (Ms-ZnO) agent through the design of a novel star-shaped morphology, resulting in modulation of surface charge orientation. Specifically, we find that Ms-ZnO particles are composed of platelet stacked structure, which generates multiple Schottky barriers due to the misalignment of crystallographic orientations. We also demonstrated that this effect allows negative charge accumulation in localized regions of the structure to act as "charged domain walls", thereby improving the antimicrobial effectiveness by electric discharging effect. We use a combination of field emission scanning electron microscopy (FE-SEM), SEM-cathodoluminescence imaging, and Kelvin probe force microscopy (KPFM) to determine that the antimicrobial activity is a result of microbial membrane physical damage caused by direct contact with the Ms-ZnO agent. It is important to point out that Ms-ZnO does not use the photocatalysis or the Zn 2+ released as the main antimicrobial mechanism, so consequently this material would show low toxicity and robust stability. This approach opens new possibilities to understand both the physical interactions role as main antimicrobial mechanisms and insight into the coupled role of hierarchical morphologies and surface functionality on the antimicrobial activity.

  6. Structuring a TiO2-based photonic crystal photocatalyst with Schottky junction for efficient photocatalysis.

    Science.gov (United States)

    Chen, Huan; Chen, Shuo; Quan, Xie; Zhang, Yaobin

    2010-01-01

    Facile and effective approaches were developed to fabricate the inverse TiO2/Pt opals Schottky structures on the Ti substrate. The as-prepared samples were characterized by scanning electron microscopy (SEM), transmission electron microscopy (TEM), X-ray diffraction (XRD), and diffuse reflectance UV-vis spectra (DRS), respectively. The results indicate that these samples were of ordered network, which was built by the Pt skeleton frame and the outer TiO2 layer. The TiO2 layer was identified as anatase with the preferential orientation of (101) plane. The experiments of short-circuit photocurrent (SCPC) and photocatalytic degradation of phenol were also conducted under the UV irradiation in order to evaluate the photoactivity of the samples. By tuning the red edge of photonic stop-band overlapping the absorption maximum of anatase (at 360 nm), both the UV absorption and the carrier separation of the samples were improved. The kinetic constant using the optimal inverse TiO2/Pt opals (0.992 h(-1)) was about 1.5 times as great as that of the disordered inverse TiO2/Pt opals (TiO2/Pt-mix) and was 3.3 times as great as that of pristine TiO2 nanocrystalline film (TiO2-nc) on Ti substrate.

  7. Gold nanoparticles deposited on linker-free silicon substrate and embedded in aluminum Schottky contact.

    Science.gov (United States)

    Gorji, Mohammad Saleh; Razak, Khairunisak Abdul; Cheong, Kuan Yew

    2013-10-15

    Given the enormous importance of Au nanoparticles (NPs) deposition on Si substrates as the precursor for various applications, we present an alternative approach to deposit Au NPs on linker-free n- and p-type Si substrates. It is demonstrated that, all conditions being similar, there is a significant difference between densities of the deposited NPs on both substrates. The Zeta-potential and polarity of charges surrounding the hydroxylamine reduced seeded growth Au NPs, are determined by a Zetasizer. To investigate the surface properties of Si substrates, contact angle measurement is performed. Field-emission scanning electron microscope is then utilized to distinguish the NPs density on the substrates. Finally, Al/Si Schottky barrier diodes with embedded Au NPs are fabricated, and their structural and electrical characteristics are further evaluated using an energy-filtered transmission electron microscope and current-voltage measurements, respectively. The results reveal that the density of NPs is significantly higher on n-type Si substrate and consequently has more pronounced effects on the electrical characteristics of the diode. It is concluded that protonation of Si-OH group on Si surface in low pH is responsible for the immobilization of Au NPs, which eventually contributes to the lowering of barrier height and enhances the electrical characteristics. Copyright © 2013 Elsevier Inc. All rights reserved.

  8. Optimization of chemical structure of Schottky-type selection diode for crossbar resistive memory.

    Science.gov (United States)

    Kim, Gun Hwan; Lee, Jong Ho; Jeon, Woojin; Song, Seul Ji; Seok, Jun Yeong; Yoon, Jung Ho; Yoon, Kyung Jean; Park, Tae Joo; Hwang, Cheol Seong

    2012-10-24

    The electrical performances of Pt/TiO(2)/Ti/Pt stacked Schottky-type diode (SD) was systematically examined, and this performance is dependent on the chemical structures of the each layer and their interfaces. The Ti layers containing a tolerable amount of oxygen showed metallic electrical conduction characteristics, which was confirmed by sheet resistance measurement with elevating the temperature, transmission line measurement (TLM), and Auger electron spectroscopy (AES) analysis. However, the chemical structure of SD stack and resulting electrical properties were crucially affected by the dissolved oxygen concentration in the Ti layers. The lower oxidation potential of the Ti layer with initially higher oxygen concentration suppressed the oxygen deficiency of the overlying TiO(2) layer induced by consumption of the oxygen from TiO(2) layer. This structure results in the lower reverse current of SDs without significant degradation of forward-state current. Conductive atomic force microscopy (CAFM) analysis showed the current conduction through the local conduction paths in the presented SDs, which guarantees a sufficient forward-current density as a selection device for highly integrated crossbar array resistive memory.

  9. 4H-SiC Schottky diode arrays for X-ray detection

    Energy Technology Data Exchange (ETDEWEB)

    Lioliou, G. [Semiconductor Materials and Devices Laboratory, School of Engineering and Informatics, University of Sussex, Falmer, Brighton BN1 9QT (United Kingdom); Chan, H.K. [School of Electrical and Electronic Engineering, Newcastle University, Newcastle upon Tyne NE1 7RU (United Kingdom); Gohil, T. [Semiconductor Materials and Devices Laboratory, School of Engineering and Informatics, University of Sussex, Falmer, Brighton BN1 9QT (United Kingdom); Vassilevski, K.V.; Wright, N.G.; Horsfall, A.B. [School of Electrical and Electronic Engineering, Newcastle University, Newcastle upon Tyne NE1 7RU (United Kingdom); Barnett, A.M. [Semiconductor Materials and Devices Laboratory, School of Engineering and Informatics, University of Sussex, Falmer, Brighton BN1 9QT (United Kingdom)

    2016-12-21

    Five SiC Schottky photodiodes for X-ray detection have been electrically characterized at room temperature. One representative diode was also electrically characterized over the temperature range 20°C to 140 °C. The performance at 30 °C of all five X-ray detectors, in both current mode and for photon counting X-ray spectroscopy was investigated. The diodes were fabricated in an array form such that they could be operated as either a 2×2 or 1×3 pixel array. Although the devices showed double barrier heights, high ideality factors and higher than expected leakage current at room temperature (12 nA/cm{sup 2} at an internal electric field of 105 kV/cm), they operated as spectroscopic photon counting soft X-ray detectors uncooled at 30 °C. The measured energy resolution (FWHM at 17.4 keV, Mo Kα) varied from 1.36 to 1.68 keV among different diodes.

  10. Performance Analysis of a Pt/ n-GaN Schottky Barrier UV Detector

    Science.gov (United States)

    Bouzid, F.; Dehimi, L.; Pezzimenti, F.

    2017-11-01

    The electrical and optical characteristics of an n-type gallium nitride (GaN)-based Schottky barrier ultraviolet (UV) detector, where a platinum (Pt) metal layer forms the anode contact, have been evaluated by means of detailed numerical simulations considering a wide range of incident light intensities. By modeling the GaN physical properties, the detector current density-voltage characteristics and spectral responsivity for different (forward and reverse) bias voltages and temperatures are presented, assuming incident optical power ranging from 0.001 W cm-2 to 1 W cm-2. The effect of defect states in the GaN substrate is also investigated. The results show that, at room temperature and under reverse bias voltage of -300 V, the dark current density is in the limit of 2.18 × 10-19 A cm-2. On illumination by a 0.36- μm UV uniform beam with intensity of 1 W cm-2, the photocurrent significantly increased to 2.33 A cm-2 and the detector spectral responsivity reached a maximum value of 0.2 A W-1 at zero bias voltage. Deep acceptor trap states and high temperature strongly affected the spectral responsivity curve in the considered 0.2 μm to 0.4 μm UV spectral range.

  11. Effects of oxide layers and metals on photoelectric and optical properties of Schottky barrier photodetector

    Energy Technology Data Exchange (ETDEWEB)

    Mohamad, W.F. [College of Engineering, Al Isra' University, P.O. Box 22 and 33, Al Isra University Post Office, Amman 11622 (Jordan); Abou Hajar, A. [College of Engineering, Aleppo University, Aleppo (Syrian Arab Republic); Saleh, A.N. [College of Engineering, Mosul University, Mosul (Iraq)

    2006-08-15

    Recently, a lot of attention has been paid to Schottky barrier photo detectors due to their promising properties and easy of fabrication. Many samples of SB devices prepared by thermal deposition under high vacuum are studied in this research. Different types and thicknesses of oxides were deposited on silicon substrate. Metals of different types and thicknesses were deposited on top of oxides. Variation of photogenerated current, responsivity, quantum efficiency and detectivity as a function of incident light wavelength were measured. It was found that the shape of the curves has two maxima, one was around 500nm and the other was around 700nm. Ni (100)-SiO{sub 2}-Si structure shows the maximum responsivity at 550nm and it is equal to 400mA/W. When comparison was made between devices of different metals, the nickel layer device showed high responsivity at visible region while the aluminum layer device showed high responsivity at near infrared region. Finally, the aluminum layer device showed detectivity higher than nickel layer device. The maximum detectivity of aluminum device was 6.4x10{sup 10}cm/HzW. (author)

  12. Role of interfacial oxide in high-efficiency graphene-silicon Schottky barrier solar cells.

    Science.gov (United States)

    Song, Yi; Li, Xinming; Mackin, Charles; Zhang, Xu; Fang, Wenjing; Palacios, Tomás; Zhu, Hongwei; Kong, Jing

    2015-03-11

    The advent of chemical vapor deposition (CVD) grown graphene has allowed researchers to investigate large area graphene/n-silicon Schottky barrier solar cells. Using chemically doped graphene, efficiencies of nearly 10% can be achieved for devices without antireflective coatings. However, many devices reported in past literature often exhibit a distinctive s-shaped kink in the measured I/V curves under illumination resulting in poor fill factor. This behavior is especially prevalent for devices with pristine (not chemically doped) graphene but can be seen in some cases for doped graphene as well. In this work, we show that the native oxide on the silicon presents a transport barrier for photogenerated holes and causes recombination current, which is responsible for causing the kink. We experimentally verify our hypothesis and propose a simple semiconductor physics model that qualitatively captures the effect. Furthermore, we offer an additional optimization to graphene/n-silicon devices: by choosing the optimal oxide thickness, we can increase the efficiency of our devices to 12.4% after chemical doping and to a new record of 15.6% after applying an antireflective coating.

  13. Ambient organic molecular passivation of Si yields near-ideal, Schottky-Mott limited, junctions

    Directory of Open Access Journals (Sweden)

    Rotem Har-Lavan

    2012-03-01

    Full Text Available We report near-perfect transfer of the electrical properties of oxide-free Si surface, modified by a molecular monolayer, to the interface of a junction made with that modified Si surface. Such behavior is highly unusual for a covalent, narrow bandgap semiconductor, such as Si. Short, ambient atmosphere, room temperature treatment of oxide-free Si(100 in hydroquinone (HQ/alkyl alcohol solutions, fully passivates the Si surface, while allowing controlled change of the resulting surface potential. The junctions formed, upon contacting such surfaces with Hg, a metal that does not chemically interact with Si, follow the Schottky-Mott model for metal-semiconductor junctions closer than ever for Si-based junctions. Two examples of such ideal behavior are demonstrated: a Tuning the molecular surface dipole over 400 mV, with only negligible band bending, by changing the alkyl chain length. Because of the excellent passivation this yields junctions with Hg with barrier heights that follow the change in the Si effective electron affinity nearly ideally. b HQ/ methanol passivation of Si is accompanied by a large surface dipole, which suffices, as interface dipole, to drive the Si into strong inversion as shown experimentally via its photovoltaic effect. With only ∼0.3 nm molecular interlayer between the metal and the Si, our results proves that it is passivation and prevention of metal-semiconductor interactions that allow ideal metal-semiconductor junction behavior, rather than an insulating transport barrier.

  14. Formation and modification of Schottky barriers at the PZT/Pt interface

    Science.gov (United States)

    Chen, Feng; Schafranek, Robert; Wu, Wenbin; Klein, Andreas

    2009-11-01

    A determination of the Schottky barrier height at the interface between ferroelectric Pb(Zr,Ti)O3 thin films and Pt by photoelectron spectroscopy is presented. Stepwise Pt deposition was performed in situ onto a contamination-free Pb(Zr,Ti)O3 thin film surface. The substrate surface is reduced in the course of Pt deposition as evident from the observation of metallic Pb. The Fermi level is found at EF - EVB = 1.6 ± 0.1 eV above the valence band maximum of the as-prepared interface. Annealing of the sample in an oxygen pressure of 0.1 and 1 Pa strongly reduces the amount of metallic Pb and leads to a reduction in the Fermi level position at the interface to EF - EVB = 1.1 ± 0.1 eV. Storage in vacuum at room temperature strongly reduces the interface leading to a significantly higher Fermi level position (EF - EVB = 2.2 ± 0.1 eV). The reduction is attributed to the presence of hydrogen in the residual gas. The change in barrier height might be a severe issue for stable device operation with Pt contacts even at ambient temperatures.

  15. Design of a silicon RCE Schottky photodetector working at 1.55 {mu}m

    Energy Technology Data Exchange (ETDEWEB)

    Casalino, M. [Istituto per la Microelettronica e Microsistemi (IMM), Consiglio Nazionale delle Ricerche, Via P. Castellino, 80131 Naples (Italy); Universita degli studi ' Mediterranea' di Reggio Calabria, Localita Feo di Vito, 89060 Reggio Calabria (Italy); Sirleto, L. [Istituto per la Microelettronica e Microsistemi (IMM), Consiglio Nazionale delle Ricerche, Via P. Castellino, 80131 Naples (Italy)]. E-mail: luigi.sirleto@imm.cnr.it; Moretti, L. [Universita degli studi ' Mediterranea' di Reggio Calabria, Localita Feo di Vito, 89060 Reggio Calabria (Italy); Della Corte, F. [Universita degli studi ' Mediterranea' di Reggio Calabria, Localita Feo di Vito, 89060 Reggio Calabria (Italy); Rendina, I. [Istituto per la Microelettronica e Microsistemi (IMM), Consiglio Nazionale delle Ricerche, Via P. Castellino, 80131 Naples (Italy)

    2006-12-15

    In this paper, the design of a resonant cavity-enhanced (RCE) Schottky photodetector, based on internal photoemission effect and working at 1.55 {mu}m, is presented. In order to estimate the theoretical quantum efficiency we take the advantage of analytical formulation of the internal photoemission effect (Fowler theory), and its extension for thin films, while for the optical analysis of device a numerical method, based on the transfer matrix method, has been implemented. Finally, we complete our design calculating bandwidth and bandwidth-efficiency product. Our numerical results prove that a quantum efficiency of 0.1% is obtained at resonant wavelength (1.55 {mu}m) with a very thin absorbing metal layer (30 nm). Theoretical values of 100 GHz and 100 MHz were obtained, respectively, for the carrier-transit time limited 3-dB bandwidth and bandwidth-efficiency. The proposed photodetector can work at room temperature and its fabrication is completely compatible with standard silicon technology.

  16. Ambipolarity reduction in DMG asymmetric vacuum dielectric Schottky Barrier GAA MOSFET to improve hot carrier reliability

    Science.gov (United States)

    Kumar, Manoj; Haldar, Subhasis; Gupta, Mridula; Gupta, R. S.

    2017-11-01

    An explicit surface potential and subthreshold current model for novel Dual Metal Gate (DMG) Asymmetric Vacuum (AV) as gate dielectric Schottky Barrier (SB) Cylindrical Gate All Around (CGAA) MOSFET with the incorporation of localized charges (Nf) is developed to provide excellent immunity against threshold voltage (Vth) degradation due to hot carriers. Hot carrier induced Localized Charges (LC) either positive or negative leads to degrade the threshold of the device. The major advantage of the proposed DMG-AV-SB-CGAA MOSFET is that it mitigates the ambipolar behavior thus offering very good on current to off current ratio; and also reduces the electron temperature which leads to less hot carrier generation thus lesser degradation in Vth and improved Hot Carrier reliability. The surface potential is determined for three different regions by solving 1-D Poisson's and 2-D Laplace equation through separation of variable method to facilitate an optimal model for calculating the subthreshold drain current from Si-SiO2 interface boundary. The developed model results are in good agreement with that of ATLAS-TCAD simulation.

  17. Structure of the MIS12 Complex and Molecular Basis of Its Interaction with CENP-C at Human Kinetochores.

    Science.gov (United States)

    Petrovic, Arsen; Keller, Jenny; Liu, Yahui; Overlack, Katharina; John, Juliane; Dimitrova, Yoana N; Jenni, Simon; van Gerwen, Suzan; Stege, Patricia; Wohlgemuth, Sabine; Rombaut, Pascaline; Herzog, Franz; Harrison, Stephen C; Vetter, Ingrid R; Musacchio, Andrea

    2016-11-03

    Kinetochores, multisubunit protein assemblies, connect chromosomes to spindle microtubules to promote chromosome segregation. The 10-subunit KMN assembly (comprising KNL1, MIS12, and NDC80 complexes, designated KNL1C, MIS12C, and NDC80C) binds microtubules and regulates mitotic checkpoint function through NDC80C and KNL1C, respectively. MIS12C, on the other hand, connects the KMN to the chromosome-proximal domain of the kinetochore through a direct interaction with CENP-C. The structural basis for this crucial bridging function of MIS12C is unknown. Here, we report crystal structures of human MIS12C associated with a fragment of CENP-C and unveil the role of Aurora B kinase in the regulation of this interaction. The structure of MIS12:CENP-C complements previously determined high-resolution structures of functional regions of NDC80C and KNL1C and allows us to build a near-complete structural model of the KMN assembly. Our work illuminates the structural organization of essential chromosome segregation machinery that is conserved in most eukaryotes. Copyright © 2016 The Author(s). Published by Elsevier Inc. All rights reserved.

  18. Copper vanadate nanowires-based MIS capacitors: Synthesis, characterization, and their electrical charge storage applications

    KAUST Repository

    Shahid, Muhammad

    2013-07-14

    Copper vanadate (CVO) nanowires were grown on Si/SiO2 substrates by thermal annealing technique. A thin film of a CVO precursor at 550 C under an ambient atmosphere could also be prepared. The electrical properties of the nanowires embedded in the dielectrical layer were examined by capacitance-voltage (C-V) measurements. The C-V curves for Au/CVO nanowires embedded in an hafnium oxide layer/SiO2/p-Si capacitor at 298 K showed a clockwise hysteresis loop when the gate bias was swept cyclically. The hysteresis characteristics were studied further at different frequencies, which clearly indicated that the traps in the nanowires have a large charging-discharging time and thus the as-synthesized nanowires can be utilized for electrical charge storage devices. © 2013 Springer Science+Business Media Dordrecht.

  19. Electrical and structural properties of (Pd/Au) Schottky contact to as grown and rapid thermally annealed GaN grown by MBE

    Energy Technology Data Exchange (ETDEWEB)

    Nirwal, Varun Singh, E-mail: varun.nirwal30@gmail.com; Singh, Joginder; Gautam, Khyati; Peta, Koteswara Rao [Department of Electronic Science, University of Delhi South Campus, Benito Juarez Road, New Delhi-110021 (India)

    2016-05-06

    We studied effect of thermally annealed GaN surface on the electrical and structural properties of (Pd/Au) Schottky contact to Ga-polar GaN grown by molecular beam epitaxy on Si substrate. Current voltage (I-V) measurement was used to study electrical properties while X-ray diffraction (XRD) measurement was used to study structural properties. The Schottky barrier height calculated using I-V characteristics was 0.59 eV for (Pd/Au) Schottky contact on as grown GaN, which increased to 0.73 eV for the Schottky contact fabricated on 700 °C annealed GaN film. The reverse bias leakage current at -1 V was also significantly reduced from 6.42×10{sup −5} A to 7.31×10{sup −7} A after annealing. The value of series resistance (Rs) was extracted from Cheung method and the value of R{sub s} decreased from 373 Ω to 172 Ω after annealing. XRD results revealed the formation of gallide phases at the interface of (Pd/Au) and GaN for annealed sample, which could be the reason for improvement in the electrical properties of Schottky contact after annealing.

  20. Electrical properties of planar AlGaN/GaN Schottky diodes: Role of 2DEG and analysis of non-idealities

    Science.gov (United States)

    Persano, Anna; Pio, Iolanda; Tasco, Vittorianna; Cuscunà, Massimo; Passaseo, Adriana; Cola, Adriano

    2017-04-01

    A detailed study of the electrical properties of planar AlGaN/GaN Schottky diodes is presented, the focus being on the role of the two dimensional electron gas (2DEG) depletion and the diodes non-idealities in different voltage regimes. The 2DEG depletion behavior is inferred from the analysis of capacitance and current measurements with transition from vertical to lateral diode operation occurring at Vpinch-off = 4 V. In particular, the sub-micrometer depletion width, laterally extending from the edge of the Schottky contact under high reverse voltages, is evaluated on the basis of a simple fringe capacitance model. Current transport mechanisms are discussed, investigating the interrelation between 2DEG, Poole-Frenkel effect, and defects. With regard to defects, the role of dislocations in the AlGaN/GaN diode non-idealities, usually interpreted in terms of Schottky barrier inhomogeneities, is critically addressed. Photocurrent spatial mapping under high reverse voltage points out the not uniform electric field distribution around the Schottky contact and highlights the presence of local photo-conductive paths, likely associated with the dislocations near the edge of the Schottky contact.