Persistent photoeffects in p-i-n GaAs/AlGaAs heterostructures with double quantum wells
DEFF Research Database (Denmark)
Dorozhkin, S.I.; Timofeev, V.B.; Hvam, Jørn Märcher
2001-01-01
Abrupt changes in the capacitance between the p and n regions were observed in a planar p-i-n GaAs/AlGaAs heterostructure with two tunneling-coupled quantum wells exposed to laser irradiation (lambda = 633 nm). These changes can be caused by variations in both temperature (in the vicinity of T...
Charged excitonic complexes in GaAs/Al0.35Ga0.65As p-i-n double quantum wells
DEFF Research Database (Denmark)
Timofeev, V. B.; Larionov, A. V.; Alessi, M. Grassi
1999-01-01
Photoluminescence (PL) and PL excitation measurements (PLE) have been performed in GaAs/AlxGa1-xAs double quantum well (QW) structures under different applied electric fields. An emission due to charged excitons (trions) has been identified in the PL spectra similar to 3 meV below the heavy...
International Nuclear Information System (INIS)
Vieira, M.; Louro, P.; Fernandes, M.; Vieira, M.A.; Fantoni, A.; Barata, M.
2009-01-01
Results on the use of a double a-SiC:H p-i-n heterostructure for signal multiplexing and demultiplexing applications in the visible range, are presented. Modulated monochromatic beams together (multiplexing mode), or a single polychromatic beam (demultiplexing mode) impinge in the device and are absorbed, accordingly to their wavelength, giving rise to a time and wavelength dependent electrical field modulation. Red, green and blue pulsed input channels are transmitted together, each one with a specific transmission rate. The combined optical signal is analyzed by reading out, under different applied voltages, the generated photocurrent. Results show that in the multiplexing mode the output signal is balanced by the wavelength and transmission rate of each input channel, keeping the memory of the incoming optical carriers. In the demultiplexing mode the photocurrent is controlled by the applied voltage allowing regaining the transmitted information. An electrical model gives insight into the device operation.
Modeling of carrier transport in multi-quantum-well p-i-n modulators
DEFF Research Database (Denmark)
Højfeldt, Sune; Mørk, Jesper
2002-01-01
The dynamical properties of InGaAsP multi-quantum-well electroabsorption modulators are investigated using a comprehensive numerical device model. We calculate the time-dependent sweep-out of photo-generated carriers and the corresponding time-dependent absorption change. The sweep-out is influen......The dynamical properties of InGaAsP multi-quantum-well electroabsorption modulators are investigated using a comprehensive numerical device model. We calculate the time-dependent sweep-out of photo-generated carriers and the corresponding time-dependent absorption change. The sweep......-out is influenced by carriers being recaptured into subsequent wells as they move towards the contacts. This process drastically increases the sweep-out time in our ten-well structure (similar to25 ps) compared to the pure drift-time (similar to1 ps). We also compare the saturation properties of two components...
International Nuclear Information System (INIS)
Han, D.; Wang, K.; Yeh, C.; Yang, L.; Deng, X.; Von Roedern, B.
1997-01-01
The temperature and electric-field dependence of the forward bias current and the electroluminescence (EL) in hydrogenated amorphous silicon (a-Si:H) p-i-n and n-i-p diodes have been studied. Both the current and the EL efficiency temperature dependence show three regions depending on either hopping-controlled or multiple-trapping or ballistic transport mechanisms. Comparing the thermalization-controlled geminate recombination processes of photoluminescence to the features of EL, the differences can be explained by transport-controlled nongeminate recombination in trap-rich materials. copyright 1997 The American Physical Society
Photoinduced entropy of InGaN/GaN p-i-n double-heterostructure nanowires
Alfaraj, Nasir
2017-04-17
The photoinduced entropy of InGaN/GaN p-i-n nanowires was investigated using temperature-dependent (6–290 K) photoluminescence. We also analyzed the photocarrier dynamics in the InGaN active regions using time-resolved photoluminescence. An increasing trend in the amount of generated photoinduced entropy of the system above 250 K was observed, while we observed an oscillatory trend in the generated entropy of the system below 250 K that stabilizes between 200 and 250 K. Strong exciton localization in indium-rich clusters, carrier trapping by surface defect states, and thermodynamic entropy effects were examined and related to the photocarrier dynamics. We conjecture that the amount of generated photoinduced entropy of the system increases as more non-radiative channels become activated and more shallowly localized carriers settle into deeply localized states; thereby, additional degrees of uncertainty related to the energy of states involved in thermionic transitions are attained.
Photoinduced entropy of InGaN/GaN p-i-n double-heterostructure nanowires
Alfaraj, Nasir; Mitra, Somak; Wu, Feng; Ajia, Idris A.; Janjua, Bilal; Prabaswara, Aditya; Aljefri, Renad A.; Sun, Haiding; Ng, Tien Khee; Ooi, Boon S.; Roqan, Iman S.; Li, Xiaohang
2017-01-01
The photoinduced entropy of InGaN/GaN p-i-n nanowires was investigated using temperature-dependent (6–290 K) photoluminescence. We also analyzed the photocarrier dynamics in the InGaN active regions using time-resolved photoluminescence. An increasing trend in the amount of generated photoinduced entropy of the system above 250 K was observed, while we observed an oscillatory trend in the generated entropy of the system below 250 K that stabilizes between 200 and 250 K. Strong exciton localization in indium-rich clusters, carrier trapping by surface defect states, and thermodynamic entropy effects were examined and related to the photocarrier dynamics. We conjecture that the amount of generated photoinduced entropy of the system increases as more non-radiative channels become activated and more shallowly localized carriers settle into deeply localized states; thereby, additional degrees of uncertainty related to the energy of states involved in thermionic transitions are attained.
International Nuclear Information System (INIS)
Varonides, Argyrios C.
2006-01-01
Photo-excitation and subsequent thermionic currents are essential components of photo-excited carrier transport in multi-quantum-well photovoltaic (hetero-PV) structures. p-i-n multi-quantum structures are useful probes for a better understanding of PV device properties. Illumination of the intrinsic region of p-i-n multi-structures causes carrier trapping in any of the quantum wells, and subsequent carrier recombination or thermal escape is possible. At the vicinity of a quantum well, we find that the (quasi) Fermi levels undergo an upward split by a small, but non-negligible, energy amount ΔE F in the order of 12 meV. We conclude this fact by comparing the photo-excited carriers trapped in a quantum well, under illumination, to the carrier concentrations under dark. Based on such a prediction, we subsequently relate thermionic current density dependence on Fermi level splitting, concluding that excess thermal currents may increase by a factor of the order of 2. We conclude that illumination causes (a) Fermi level separation and (b) an apparent increase in thermionic currents
Xing, Zhou; Li, Shu-Hui; Wu, Bao-Shan; Wang, Xin; Wang, Lu-Yao; Wang, Tan; Liu, Hao-Ran; Zhang, Mei-Lin; Yun, Da-Qin; Deng, Lin-Long; Xie, Su-Yuan; Huang, Rong-Bin; Zheng, Lan-Sun
2018-06-01
Interface engineering that involves in the metal cathodes and the electron transport layers (ETLs) facilitates the simultaneous improvement of device performances and stability in perovskite solar cells (PSCs). Herein, low-temperature solution-processed cerium oxide (CeOx) films are prepared by a facile sol-gel method and employed as the interface layers between [6,6]-phenyl-C61-butyric acid methyl ester (PC61BM) and an Ag back contact to form PC61BM/CeOx double ETLs. The introduction of CeOx enables electron extraction to the Ag electrode and protects the underlying perovskite layer and thus improves the device performance and stability of the p-i-n PSCs. The p-i-n PSCs with double PC61BM/CeOx ETLs demonstrate a maximum power conversion efficiency (PCE) of 17.35%, which is superior to those of the devices with either PC61BM or CeOx single ETLs. Moreover, PC61BM/CeOx devices exhibit excellent stability in light soaking, which is mainly due to the chemically stable CeOx interlayer. The results indicate that CeOx is a promising interface modification layer for stable high-efficiency PSCs.
Energy Technology Data Exchange (ETDEWEB)
Sellers, D. G.; Chen, E. Y.; Doty, M. F. [Department of Materials Science and Engineering, University of Delaware, Newark, Delaware 19716 (United States); Polly, S. J.; Hubbard, S. M. [NanoPower Research Laboratory, Rochester Institute of Technology, Rochester, New York 14623 (United States)
2016-05-21
We investigate the effect of doping on the mechanisms of carrier escape from intermediate states in delta-doped InAs/GaAs intermediate band solar cells. The intermediate states arise from InAs quantum dots embedded in a GaAs p-i-n junction cell. We find that doping the sample increases the number of excited-state carriers participating in a cycle of trapping and carrier escape via thermal, optical, and tunneling mechanisms. However, we find that the efficiency of the optically-driven carrier escape mechanism is independent of doping and remains small.
Biswas, Sayantan; Sinha, Amitabha
2017-10-01
An analytical study has been carried out on the InAs/GaAs p+-i-n+ quantum dot solar cell, taking into consideration the contributions of each region of the cell to the total photocurrent. The expressions for the excess minority carrier concentration and photocurrent from the front and the rear regions of the device have been obtained and their variations with different device parameters have been studied. Also, based on the investigations reported by some researchers earlier, the photocurrent contribution from the intrinsic region of the solar has been studied, taking into account the quantum dot ensemble absorption coefficient, which depends significantly on the quantum dot size and size dispersion. It is observed that all the three regions of the cell contribute to the overall internal quantum efficiency (IQE) of the cell. The contribution of each region of the solar cell to the total IQE has been shown graphically. From these studies it is observed that the incorporation of the quantum dots in the intrinsic region enhance the photocurrent density and hence the IQE of such solar cell, as it absorbs low energy photons, which are beyond the absorption range of GaAs. Finally, the fill factor of the solar cell has been calculated.
Directory of Open Access Journals (Sweden)
Daijiro Fukuda
2004-01-01
Full Text Available Using diagrammatic pictures of tensor contractions, we consider a Hopf algebra (Aop⊗ℛλA** twisted by an element ℛλ∈A*⊗Aop corresponding to a Hopf algebra morphism λ:A→A. We show that this Hopf algebra is quasitriangular with the universal R-matrix coming from ℛλ when λ2=idA, generalizing the quantum double construction which corresponds to the case λ=idA.
Continuous Holdup Measurements with Silicon P-I-N Photodiodes
International Nuclear Information System (INIS)
Bell, Z.W.; Oberer, R.B.; Williams, J.A.; Smith, D.E.; Paulus, M.J.
2002-01-01
We report on the behavior of silicon P-I-N photodiodes used to perform holdup measurements on plumbing. These detectors differ from traditional scintillation detectors in that no high-voltage is required, no scintillator is used (gamma and X rays are converted directly by the diode), and they are considerably more compact. Although the small size of the diodes means they are not nearly as efficient as scintillation detectors, the diodes' size does mean that a detector module, including one or more diodes, pulse shaping electronics, analog-to-digital converter, embedded microprocessor, and digital interface can be realized in a package (excluding shielding) the size of a pocket calculator. This small size, coupled with only low-voltage power requirement, completely solid-state realization, and internal control functions allows these detectors to be strategically deployed on a permanent basis, thereby reducing or eliminating the need for manual holdup measurements. In this paper, we report on the measurement of gamma and X rays from 235 U and 238 U contained in steel pipe. We describe the features of the spectra, the electronics of the device and show how a network of them may be used to improve estimates of inventory in holdup
The quantum double in integrable quantum field theory
International Nuclear Information System (INIS)
Bernard, D.; LeClair, A.
1993-01-01
Various aspects of recent works on affine quantum group symmetry of integrable 2D quantum field theory are reviewed and further clarified. A geometrical meaning is given to the quantum double, and other properties of quantum groups. The S-matrix is identified with the universal R-matrix. Multiplicative presentations of the yangian double are analyzed. (orig.)
Effect of III-nitride polarization on V{sub OC} in p-i-n and MQW solar cells
Energy Technology Data Exchange (ETDEWEB)
Namkoong, Gon; Boland, Patrick; Foe, Kurniawan; Latimer, Kevin [Department of Electrical and Computer Engineering, Old Dominion University, Applied Research Center, 12050 Jefferson Avenue, Newport News, VA 23606 (United States); Bae, Si-Young; Shim, Jae-Phil; Lee, Dong-Seon [School of Information and Communications, Gwangju Institute of Science and Technology, 261 Cheomdan-gwagiro (Oryong-dong), Buk-gu, Gwangju 500-712 (Korea, Republic of); Jeon, Seong-Ran [Korea Photonics Technology Institute, 971-35, Wolchul-dong, Buk-gu, Gwangju, 500-779 (Korea, Republic of); Doolittle, W. Alan [School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, GA 30332 (United States)
2011-02-15
We performed detailed studies of the effect of polarization on III-nitride solar cells. Spontaneous and piezoelectric polarizations were assessed to determine their impacts upon the open circuit voltages (V{sub OC}) in p-i(InGaN)-n and multi-quantum well (MQW) solar cells. We found that the spontaneous polarization in Ga-polar p-i-n solar cells strongly modifies energy band structures and corresponding electric fields in a way that degrades V{sub OC} compared to non-polar p-i-n structures. In contrast, we found that piezoelectric polarization in Ga-polar MQW structures does not have a large influence on V{sub OC} compared to non-polar MQW structures. (copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)
Improved charge collection of the buried p-i-n a-Si:H radiation detectors
International Nuclear Information System (INIS)
Fujieda, I.; Cho, G.; Conti, M.; Drewery, J.; Kaplan, S.N.; Perez-Mendez, V.; Qureshi, S.; Street, R.A.
1989-09-01
Charge collection in hydrogenated amorphous silicon (a-Si:H) radiation detectors is improved for high LET particle detection by adding thin intrinsic layers to the usual p-i-n structure. This buried p-i-n structure enables us to apply higher bias and the electric field is enhanced. When irradiated by 5.8 MeV α particles, the 5.7 μm thick buried p-i-n detector with bias 300V gives a signal size of 60,000 electrons, compared to about 20,000 electrons with the simple p-i-n detectors. The improved charge collection in the new structure is discussed. The capability of tailoring the field profile by doping a-Si:H opens a way to some interesting device structures. 17 refs., 7 figs
Characterization of an Mg-implanted GaN p-i-n Diode
2016-03-31
Characterization of an Mg- implanted GaN p-i-n Diode Travis J. Anderson, Jordan D. Greenlee, Boris N. Feigelson, Karl D. Hobart, and Francis J...Kub Naval Research Laboratory, Washington, DC 20375 Abstract: A p-i-n diode formed by the implantation of Mg in GaN was fabricated and...characterized. After implantation , Mg was activated using the symmetrical multicycle rapid thermal annealing technique with heating pulses up to 1340C
Double-partition Quantum Cluster Algebras
DEFF Research Database (Denmark)
Jakobsen, Hans Plesner; Zhang, Hechun
2012-01-01
A family of quantum cluster algebras is introduced and studied. In general, these algebras are new, but sub-classes have been studied previously by other authors. The algebras are indexed by double parti- tions or double flag varieties. Equivalently, they are indexed by broken lines L. By grouping...... together neighboring mutations into quantum line mutations we can mutate from the cluster algebra of one broken line to another. Compatible pairs can be written down. The algebras are equal to their upper cluster algebras. The variables of the quantum seeds are given by elements of the dual canonical basis....
Conductance in double quantum well systems
International Nuclear Information System (INIS)
Hasbun, J E
2003-01-01
The object of this paper is to review the electronic conductance in double quantum well systems. These are quantum well structures in which electrons are confined in the z direction by large band gap material barrier layers, yet form a free two-dimensional Fermi gas within the sandwiched low band gap material layers in the x-y plane. Aspects related to the conductance in addition to the research progress made since the inception of such systems are included. While the review focuses on the tunnelling conductance properties of double quantum well devices, the longitudinal conductance is also discussed. Double quantum well systems are a more recent generation of structures whose precursors are the well known double-barrier resonant tunnelling systems. Thus, they have electronic signatures such as negative differential resistance, in addition to resonant tunnelling, whose behaviours depend on the wavefunction coupling between the quantum wells. As such, the barrier which separates the quantum wells can be tailored in order to provide better control of the device's electronic properties over their single well ancestors. (topical review)
Recombination of charge carriers in the GaAs-based p-i-n diode
International Nuclear Information System (INIS)
Ayzenshtat, G. I.; Yushenko, A. Y.; Gushchin, S. M.; Dmitriev, D. V.; Zhuravlev, K. S.; Toropov, A. I.
2010-01-01
It is established that the radiative recombination of charge carriers plays a substantial role in the GaAs-based p-i-n diodes at high densities of the forward current. It is shown experimentally that the diodes operating in microwave integrated circuits intensely emit light in the IR range with wavelengths from 890 to 910 nm. The obtained results indicate the necessity of taking into account the features of recombination processes in the GaAs-based microwave p-i-n diodes.
Hydrogenic impurity in double quantum dots
International Nuclear Information System (INIS)
Wang, X.F.
2007-01-01
The ground state binding energy and the average interparticle distances for a hydrogenic impurity in double quantum dots with Gaussian confinement potential are studied by the variational method. The probability density of the electron is calculated, too. The dependence of the binding energy on the impurity position is investigated for GaAs quantum dots. The result shows that the binding energy has a minimum as a function of the distance between the two quantum dots when the impurity is located at the center of one quantum dot or at the center of the edge of one quantum dot. When the impurity is located at the center of the two dots, the binding energy decreases monotonically
Double-pass quantum volume hologram
International Nuclear Information System (INIS)
Vasilyev, Denis V.; Sokolov, Ivan V.
2011-01-01
We propose a scheme for parallel, spatially multimode quantum memory for light. The scheme is based on the propagation in different directions of a quantum signal wave and strong classical reference wave, like in a classical volume hologram and the previously proposed quantum volume hologram [D. V. Vasilyev et al., Phys. Rev. A 81, 020302(R) (2010)]. The medium for the hologram consists of a spatially extended ensemble of cold spin-polarized atoms. In the absence of the collective spin rotation during the interaction, two passes of light for both storage and retrieval are required, and therefore the present scheme can be called a double-pass quantum volume hologram. The scheme is less sensitive to diffraction and therefore is capable of achieving a higher density of storage of spatial modes as compared to the previously proposed thin quantum hologram [D. V. Vasilyev et al., Phys. Rev. A 77, 020302(R) (2008)], which also requires two passes of light for both storage and retrieval. However, the present scheme allows one to achieve a good memory performance with a lower optical depth of the atomic sample as compared to the quantum volume hologram. A quantum hologram capable of storing entangled images can become an important ingredient in quantum information processing and quantum imaging.
Waveguide photonic crystals with characteristics controlled with p-i-n diodes
International Nuclear Information System (INIS)
Usanov, D. A.; Skripal, A. V.; Abramov, A. V.; Bogolyubov, A. S.; Skvortsov, V. S.; Merdanov, M. K.
2010-01-01
A one-dimensional waveguide photonic structure-specifically, a photonic crystal with a controllable frequency characteristic-is designed. The central frequency of the spectral window of the photonic crystal can be tuned by choosing the parameters of disturbance of periodicity in the photonic crystal, whereas the transmission coefficient at a particular frequency can be controlled by varying the voltage at a p-i-n diode. It is shown that the possibility exists of using the waveguide photonic crystal to design a microwave device operating in the 3-cm-wavelength region, with a transmission band of 70 MHz at a level 3 dB and the transmission coefficient controllable in the range from -1.5 to -25 dB under variations in the forward voltage bias at the p-i-n diode from zero to 700 mV.
Silicon P.I.N. Junctions used for studies of radiation damage
International Nuclear Information System (INIS)
Lanore, J.
1964-06-01
Irradiation of silicon P.I.N. junction has been studied primarily for the purpose of developing a radiation damage dosimeter, but also for the purpose of investigating silicon itself. It is known that the rate of recombination of electrons and holes is a linear function of defects introduced by neutron irradiation. Two methods have been used to measure that rate of recombination: forward characteristic measurements, recovery time measurements. In order to explain how these two parameters depend on recombination rate we have given a theory of the P.I.N. junction. We have also given an idea of the carrier lifetime dependence versus temperature. Annealing effects in the range of 70 to 700 K have also been studied, we found five annealing stages with corresponding activation energies. As an application for these studies, we developed a radiation damage dosimeter with which we made several experiments in facilities such as Naiade or Marias. (author) [fr
Double quantum dot as a minimal thermoelectric generator
Donsa, S.; Andergassen, S.; Held, K.
2014-01-01
Based on numerical renormalization group calculations, we demonstrate that experimentally realized double quantum dots constitute a minimal thermoelectric generator. In the Kondo regime, one quantum dot acts as an n-type and the other one as a p-type thermoelectric device. Properly connected the double quantum dot provides a miniature power supply utilizing the thermal energy of the environment.
Defects influence on short circuit current density in p-i-n silicon solar cell
International Nuclear Information System (INIS)
Wagah F Mohamad; Alhan M Mustafa
2006-01-01
The admittance analysis method has been used to calculate the collection efficiency and the short circuit current density in a-Si:H p-i-n solar cell, as a function of the thickness of i-layer. Its is evident that the results of the short circuit current can be used to determine the optimal thickness of the i-layer of a cell, and it will be more accurate in comparison with the previous studies using a constant generation rate or an empirical exponential function for the generation of charge carriers throughout the i-layer
GaAs Schottky versus p/i/n diodes for pixellated X-ray detectors
Bourgoin, J C
2002-01-01
We discuss the performances of GaAs p/i/n structures and Schottky barriers for application as photodetectors for high-energy photons. We compare the magnitude of the leakage current and the width of the depleted region for a given reverse bias. We mention the effect of states present at the metal-semiconductor interface on the extension of the space charge region in Schottky barriers. We illustrate this effect by a description of the capacitance behaviour of a Au-GaAs barrier under gamma irradiation.
Density of states measurements in a p-i-n solar cell
Energy Technology Data Exchange (ETDEWEB)
Crandall, R.S.; Wang, Q. [National Renewable Energy Lab., Golden, CO (United States)
1996-05-01
The authors describe results of density of states (DOS) profiling in p-i-n solar-cell devices using drive-level capacitance (DLC) techniques. Near the p-i interface the defect density is high, decreasing rapidly into the interior, reaching low values in the central region of the cell, and rising rapidly again at the n-i interface. They show that the states in the central region are neutral dangling-bond defects, whereas those near the interfaces with the doped layers are charged dangling bonds.
Understanding the Double Quantum Muonium RF Resonance
Kreitzman, S. R.; Cottrell, S. P.; Fleming, D. G.; Sun-Mack, S.
A physically intuitive analytical solution to the Mu + RF Hamiltonian and lineshape is developed. The method is based on reformulating the problem in a basis set that explicitly accounts for the 1q RF transitions and identifying an isolated upper 1q quasi-eigenstate within that basis. Subsequently the double quantum resonance explicitly manifests itself via the non-zero interaction term between the pair of lower ortho-normalized 1q basis states, which in this field region are substantially the | \\uparrow \\uparrow > and | \\downarrow \\downarrow > Mu states.
Design and characterization of GaN p-i-n diodes for betavoltaic devices
Khan, Muhammad R.; Smith, Joshua R.; Tompkins, Randy P.; Kelley, Stephen; Litz, Marc; Russo, John; Leathersich, Jeff; Shahedipour-Sandvik, Fatemeh (Shadi); Jones, Kenneth A.; Iliadis, Agis
2017-10-01
The performance of gallium nitride (GaN) p-i-n diodes were investigated for use as a betavoltaic device. Dark IV measurements showed a turn on-voltage of approximately 3.2 V, specific-on-resistance of 15.1 mΩ cm2 and a reverse leakage current of -0.14 mA/cm2 at -10 V. A clear photo-response was observed when IV curves were measured under a light source at a wavelength of 310 nm (4.0 eV). In addition, GaN p-i-n diodes were tested under an electron-beam in order to simulate common beta radiation sources ranging from that of 3H (5.6 keV average) to 63Ni (17 keV average). From this data, we estimated output powers of 53 nW and 750 nW with overall efficiencies of 0.96% and 4.4% for our device at incident electron energies of 5.6 keV and 17 keV corresponding to 3H and 63Ni beta sources respectively.
Influence of production technology and design on characteristics neutron-sensitive P-I-N diodes
International Nuclear Information System (INIS)
Perevertaylo, V.L.; Kovrygin, V.I.
2012-01-01
This paper presents the results of tests on neutron-sensitive p-i-n diode with local p-n junction, which allows to measure not only the integral dose by nonionizing energy loss (NIEL), but also the real-time dose and dose rate because of ionizing energy losses (IEL). The influence of design and process parameters and the lifetime of minority carriers on the radiation characteristics of the device considered. Sensitivity at low doses (from one to ten rad) is limited due to a decrease in the lifetime because of influence of lateral sides of cut. The sensitivity and accuracy of dose can be increased by moving of p-n junction away from the cut surface. The dependence of the voltage drop across the diode on the neutron dose irradiation up to 5 krad received, and the sensitivity was 2 - 3 mV/rad. We have demonstrated that replacement of the bulk p-i-n diode with total p-n junction by new diodes with local p-n junction allow for increase sensitivity, accuracy of dose and application in NIEL and IEL measurements simultaneously. Explanation for the extinction of a direct current through the diode with increasing doses of neutron irradiation proposed
A final report for Gallium arsenide P-I-N detectors for high-sensitivity imaging of thermal neutrons
Vernon, S M
1999-01-01
This SBIR Phase I developed neutron detectors made FR-om gallium arsenide (GaAs) p-type/ intrinsic/n-type (P-I-N) diodes grown by metalorganic chemical vapor deposition (MOCVD) onto semi-insulating (S1) bulk GaAs wafers. A layer of isotonically enriched boron-10 evaporated onto the FR-ont surface serves to convert incoming neutrons into lithium ions and a 1.47 MeV alpha particle which creates electron-hole pairs that are detected by the GaAs diode. Various thicknesses of ''intrinsic'' (I) undoped GaAs were tested, as was use of a back-surface field (BSF) formed FR-om a layer of Al sub x Ga sub 1 sub - sub x As. Schottky-barrier diodes formed FR-om the same structures without the p+ GaAs top layer were tested as a comparison. After mesa etching and application of contacts, devices were tested in visible light before application of the boron coating. Internal quantum efficiency (IQE) of the best diode near the GaAs bandedge is over 90%. The lowest dark current measured is 1 x 10 sup - sup 1 sup 2 amps at -1 V o...
High performance p-i-n CdTe and CdZnTe detectors
Khusainov, A K; Ilves, A G; Morozov, V F; Pustovoit, A K; Arlt, R D
1999-01-01
A breakthrough in the performance of p-i-n CdTe and CdZnTe detectors is reported. The detector stability has been significantly improved, allowing their use in precise gamma and XRF applications. Detectors with energy resolution close to Si and Ge were produced operating with only -30--35 deg. C cooling (by a Peltier cooler of 15x15x10 mm size and a consumed power less than 5 W). Presently detectors with volume of up to 300 mm sup 3 are available. In terms of photoelectric effect efficiency it corresponds to HPGe detectors with volumes of about 1.5 cm sup 3. The possibilities of further improvement of CdTe and CdZnTe detector characteristics are discussed in this paper.
Leakage current of amorphous silicon p-i-n diodes made by ion shower doping
International Nuclear Information System (INIS)
Kim, Hee Joon; Cho, Gyuseong; Choi, Joonhoo; Jung, Kwan-Wook
2002-01-01
In this letter, we report the leakage current of amorphous silicon (a-Si:H) p-i-n photodiodes, of which the p layer is formed by ion shower doping. The ion shower doping technique has an advantage over plasma-enhanced chemical vapor deposition (PECVD) in the fabrication of a large-area amorphous silicon flat-panel detector. The leakage current of the ion shower diodes shows a better uniformity within a 30 cmx40 cm substrate than that of the PECVD diodes. However, it shows a higher leakage current of 2-3 pA/mm 2 at -5 V. This high current originates from the high injection current at the p-i junction
Characterisation of different hole transport materials as used in organic p-i-n solar cells
Energy Technology Data Exchange (ETDEWEB)
Pfuetzner, Steffen; Petrich, Annette; Koch, Maik; Riede, Moritz; Leo, Karl [Institut fuer Angewandte Photophysik, Technische Universitaet Dresden (Germany); Malbrich, Christine [Leibniz-Institut fuer Festkoerper- und Werkstoffforschung, Dresden (Germany); Hildebrandt, Dirk; Pfeiffer, Martin [Heliatek GmbH, Dresden (Germany)
2008-07-01
This work focuses on the replacement of hole transport material MeO-TPD, which has been used so far in organic p-i-n- solar cells despite its has unfavourable behaviour at elevated temperatures. For this reason, different characterisation and investigations of the hole transport materials PV-TPD, PV-TPDoM, Di-NPB and MeO-Spiro-TPD were done, i.e. dopability, hole mobility, absorption, reflection, cyclic voltametry and glass transition temperature were measured. With simplified structures, e.g. m-i-p diodes, and simplified solar cells, consisting of the blue absorbing fullerene C{sub 60} as acceptor and the transparent donor material 4P-TPD, further specific material properties were determined.
Noise in a-Si:H p-i-n detector diodes
International Nuclear Information System (INIS)
Cho, G.; Qureshi, S.; Drewery, J.S.; Jing, T.; Kaplan, S.N.; Lee, H.; Mireshghi, A.; Perez-Mendez, V.; Wildermuth, D.
1991-10-01
Noise of a-Si:H p-i-n diodes (5 ∼ 50 μm thick) under reverse bias was investigated. The current dependent 1/f type noise was found to be the main noise component at high bias. At low bias the thermal noise from a series resistance of the p-layer and of the metallic contacts is the dominant noise source which is unrelated to the reverse current through the diode. The noise associated with the p-layer resistance decreased significantly on annealing under reverse bias, reducing the total zero bias noise by a factor 2 approximately. The noise recovered to the original value on subsequent annealing without bias. In addition to the resistive noise there seems to be a shaping time independent noise component at zero biased diodes
Room Temperature Direct Band Gap Emission from Ge p-i-n Heterojunction Photodiodes
Directory of Open Access Journals (Sweden)
E. Kasper
2012-01-01
Full Text Available Room temperature direct band gap emission is observed for Si-substrate-based Ge p-i-n heterojunction photodiode structures operated under forward bias. Comparisons of electroluminescence with photoluminescence spectra allow separating emission from intrinsic Ge (0.8 eV and highly doped Ge (0.73 eV. Electroluminescence stems from carrier injection into the intrinsic layer, whereas photoluminescence originates from the highly n-doped top layer because the exciting visible laser wavelength is strongly absorbed in Ge. High doping levels led to an apparent band gap narrowing from carrier-impurity interaction. The emission shifts to higher wavelengths with increasing current level which is explained by device heating. The heterostructure layer sequence and the light emitting device are similar to earlier presented photodetectors. This is an important aspect for monolithic integration of silicon microelectronics and silicon photonics.
Directory of Open Access Journals (Sweden)
D. Gebeyehu
2004-06-01
Full Text Available This report demonstrates external power conversion efficiencies of 2% under 100 mW/cm2 simulated AM1.5 illumination for organic thin-film photovoltaic cells using a phthalocyanine-fullerene (ZnPc/C60 bulk heterojunction as an active layer, embedded into a p-i-n type architecture with doped wide-gap charge transport layers. For an optically optimized device, we found internal quantum efficiency (IQE of above 80% under short circuit conditions. Such optically thin cells with high internal quantum efficiency are an important step towards high efficiency tandem cells. The p-i-n architecture allows for the design of solar cells with high internal quantum efficiency where only the photoactive region absorbs visible light and recombination losses at contacts are avoided. The I-V characteristics, power conversion efficiencies, the dependence of short circuit current on incident white light intensity, incident photon to collected electron efficiency (IPCE and absorption spectra of the active layer system are discussed.
Directory of Open Access Journals (Sweden)
Fedros Galatopoulos
2017-07-01
Full Text Available The charge accumulation properties of p-i-n perovskite solar cells were investigated using three representative organic and inorganic hole transporting layer (HTL: (a Poly(3,4-ethylenedioxythiophene-poly(styrenesulfonate (PEDOT:PSS, Al 4083, (b copper-doped nickel oxide (Cu:NiOx, and (c Copper oxide (CuO. Through impedance spectroscopy analysis and modelling, it is shown that charge accumulation is decreased in the HTL/perovskite interface, between PEDOT:PSS to Cu:NiOx and CuO. This was indicative from the decrease in double layer capacitance (Cdl and interfacial charge accumulation capacitance (Cel, resulting in an increase to recombination resistance (Rrec, thus decreased charge recombination events between the three HTLs. Through AFM measurements, it is also shown that the reduced recombination events (followed by the increase in Rrec are also a result of increased grain size between the three HTLs, thus reduction in the grain boundary area. These charge accumulation properties of the three HTLs have resulted in an increase to the power conversion efficiency between the PEDOT:PSS (8.44%, Cu:NiOx (11.45%, and CuO (15.3%-based devices.
Discrete quantum Fourier transform in coupled semiconductor double quantum dot molecules
International Nuclear Information System (INIS)
Dong Ping; Yang Ming; Cao Zhuoliang
2008-01-01
In this Letter, we present a physical scheme for implementing the discrete quantum Fourier transform in a coupled semiconductor double quantum dot system. The main controlled-R gate operation can be decomposed into many simple and feasible unitary transformations. The current scheme would be a useful step towards the realization of complex quantum algorithms in the quantum dot system
GaAs nanowire array solar cells with axial p-i-n junctions.
Yao, Maoqing; Huang, Ningfeng; Cong, Sen; Chi, Chun-Yung; Seyedi, M Ashkan; Lin, Yen-Ting; Cao, Yu; Povinelli, Michelle L; Dapkus, P Daniel; Zhou, Chongwu
2014-06-11
Because of unique structural, optical, and electrical properties, solar cells based on semiconductor nanowires are a rapidly evolving scientific enterprise. Various approaches employing III-V nanowires have emerged, among which GaAs, especially, is under intense research and development. Most reported GaAs nanowire solar cells form p-n junctions in the radial direction; however, nanowires using axial junction may enable the attainment of high open circuit voltage (Voc) and integration into multijunction solar cells. Here, we report GaAs nanowire solar cells with axial p-i-n junctions that achieve 7.58% efficiency. Simulations show that axial junctions are more tolerant to doping variation than radial junctions and lead to higher Voc under certain conditions. We further study the effect of wire diameter and junction depth using electrical characterization and cathodoluminescence. The results show that large diameter and shallow junctions are essential for a high extraction efficiency. Our approach opens up great opportunity for future low-cost, high-efficiency photovoltaics.
Integrated Amorphous Silicon p-i-n Temperature Sensor for CMOS Photonics
Directory of Open Access Journals (Sweden)
Sandro Rao
2016-01-01
Full Text Available Hydrogenated amorphous silicon (a-Si:H shows interesting optoelectronic and technological properties that make it suitable for the fabrication of passive and active micro-photonic devices, compatible moreover with standard microelectronic devices on a microchip. A temperature sensor based on a hydrogenated amorphous silicon p-i-n diode integrated in an optical waveguide for silicon photonics applications is presented here. The linear dependence of the voltage drop across the forward-biased diode on temperature, in a range from 30 °C up to 170 °C, has been used for thermal sensing. A high sensitivity of 11.9 mV/°C in the bias current range of 34–40 nA has been measured. The proposed device is particularly suitable for the continuous temperature monitoring of CMOS-compatible photonic integrated circuits, where the behavior of the on-chip active and passive devices are strongly dependent on their operating temperature.
Deformed quantum double realization of the toric code and beyond
Padmanabhan, Pramod; Ibieta-Jimenez, Juan Pablo; Bernabe Ferreira, Miguel Jorge; Teotonio-Sobrinho, Paulo
2016-09-01
Quantum double models, such as the toric code, can be constructed from transfer matrices of lattice gauge theories with discrete gauge groups and parametrized by the center of the gauge group algebra and its dual. For general choices of these parameters the transfer matrix contains operators acting on links which can also be thought of as perturbations to the quantum double model driving it out of its topological phase and destroying the exact solvability of the quantum double model. We modify these transfer matrices with perturbations and extract exactly solvable models which remain in a quantum phase, thus nullifying the effect of the perturbation. The algebra of the modified vertex and plaquette operators now obey a deformed version of the quantum double algebra. The Abelian cases are shown to be in the quantum double phase whereas the non-Abelian phases are shown to be in a modified phase of the corresponding quantum double phase. These are illustrated with the groups Zn and S3. The quantum phases are determined by studying the excitations of these systems namely their fusion rules and the statistics. We then go further to construct a transfer matrix which contains the other Z2 phase namely the double semion phase. More generally for other discrete groups these transfer matrices contain the twisted quantum double models. These transfer matrices can be thought of as being obtained by introducing extra parameters into the transfer matrix of lattice gauge theories. These parameters are central elements belonging to the tensor products of the algebra and its dual and are associated to vertices and volumes of the three dimensional lattice. As in the case of the lattice gauge theories we construct the operators creating the excitations in this case and study their braiding and fusion properties.
Lead Halide Perovskite Photovoltaic as a Model p-i-n Diode.
Miyano, Kenjiro; Tripathi, Neeti; Yanagida, Masatoshi; Shirai, Yasuhiro
2016-02-16
The lead halide perovskite photovoltaic cells, especially the iodide compound CH3NH3PbI3 family, exhibited enormous progress in the energy conversion efficiency in the past few years. Although the first attempt to use the perovskite was as a sensitizer in a dye-sensitized solar cell, it has been recognized at the early stage of the development that the working of the perovskite photovoltaics is akin to that of the inorganic thin film solar cells. In fact, theoretically perovskite is always treated as an ordinary direct band gap semiconductor and hence the perovskite photovoltaics as a p-i-n diode. Despite this recognition, research effort along this line of thought is still in pieces and incomplete. Different measurements have been applied to different types of devices (different not only in the materials but also in the cell structures), making it difficult to have a coherent picture. To make the situation worse, the perovskite photovoltaics have been plagued by the irreproducible optoelectronic properties, most notably the sweep direction dependent current-voltage relationship, the hysteresis problem. Under such circumstances, it is naturally very difficult to analyze the data. Therefore, we set out to make hysteresis-free samples and apply time-tested models and numerical tools developed in the field of inorganic semiconductors. A series of electrical measurements have been performed on one type of CH3NH3PbI3 photovoltaic cells, in which a special attention was paid to ensure that their electronic reproducibility was better than the fitting error in the numerical analysis. The data can be quantitatively explained in terms of the established models of inorganic semiconductors: current/voltage relationship can be very well described by a two-diode model, while impedance spectroscopy revealed the presence of a thick intrinsic layer with the help of a numerical solver, SCAPS, developed for thin film solar cell analysis. These results point to that CH3NH3PbI3 is an
Magnetophonon resonance in double quantum wells
Ploch, D.; Sheregii, E. M.; Marchewka, M.; Wozny, M.; Tomaka, G.
2009-05-01
The experimental results obtained for the magnetotransport in pulsed magnetic fields in the InGaAs/InAlAs double quantum well (DQW) structures of two different shapes of wells and different values of the electron density are reported. The magnetophonon resonance (MPR) was observed for both types of structures within the temperature range 77-125 K. Four kinds of LO phonons are taken into account to interpret the MPR oscillations in the DQW and a method of the Landau level calculation in the DQW is elaborated for this aim. The peculiarity of the MPR in the DQW is the large number of the Landau levels caused by SAS splitting of the electron states (splitting on the symmetric and anti-symmetric states) and the large number of the phonon assistance electron transitions between Landau levels. The significant role of the carrier statistics is shown too. The behavior of the electron states in the DQWs at comparably high temperatures has been studied using the MPR. It is shown that the Huang and Manasreh [Manasreh [Phys. Rev. B 54, 2044 (1996)] model involving screening of exchange interaction is confirmed.
Quantum Phase Spase Representation for Double Well Potential
Babyuk, Dmytro
2002-01-01
A behavior of quantum states (superposition of two lowest eigenstates, Gaussian wave packet) in phase space is studied for one and two dimensional double well potential. Two dimensional potential is constructed from double well potential coupled linearly and quadratically to harmonic potential. Quantum trajectories are compared with classical ones. Preferable tunneling path in phase space is found. An influence of energy of initial Gaussian wave packet and trajectory initial condition on tunn...
Double Tunneling Injection Quantum Dot Lasers for High Speed Operation
2017-10-23
Double Tunneling-Injection Quantum Dot Lasers for High -Speed Operation The views, opinions and/or findings contained in this report are those of...SECURITY CLASSIFICATION OF: 1. REPORT DATE (DD-MM-YYYY) 4. TITLE AND SUBTITLE 13. SUPPLEMENTARY NOTES 12. DISTRIBUTION AVAILIBILITY STATEMENT 6...State University Title: Double Tunneling-Injection Quantum Dot Lasers for High -Speed Operation Report Term: 0-Other Email: asryan@vt.edu Distribution
Self-assembly of concentric quantum double rings.
Mano, Takaaki; Kuroda, Takashi; Sanguinetti, Stefano; Ochiai, Tetsuyuki; Tateno, Takahiro; Kim, Jongsu; Noda, Takeshi; Kawabe, Mitsuo; Sakoda, Kazuaki; Kido, Giyuu; Koguchi, Nobuyuki
2005-03-01
We demonstrate the self-assembled formation of concentric quantum double rings with high uniformity and excellent rotational symmetry using the droplet epitaxy technique. Varying the growth process conditions can control each ring's size. Photoluminescence spectra emitted from an individual quantum ring complex show peculiar quantized levels that are specified by the carriers' orbital trajectories.
Vertically coupled double quantum rings at zero magnetic field
Malet, Francesc; Barranco, Manuel; Lipparini, Enrico; Pi, Ricardo Mayol Martí; Climente, Juan Ignacio; Planelles, Josep
2006-01-01
Within local-spin-density functional theory, we have investigated the `dissociation' of few-electron circular vertical semiconductor double quantum ring artificial molecules at zero magnetic field as a function of inter-ring distance. In a first step, the molecules are constituted by two identical quantum rings. When the rings are quantum mechanically strongly coupled, the electronic states are substantially delocalized, and the addition energy spectra of the artificial molecule resemble thos...
Design and Characterization of p-i-n Devices for Betavoltaic Microbatteries on Gallium Nitride
Khan, Muhammad Raziuddin A.
Betavoltaic microbatteries convert nuclear energy released as beta particles directly into electrical energy. These batteries are well suited for electrical applications such as micro-electro-mechanical systems (MEMS), implantable medical devices and sensors. Such devices are often located in hard to access places where long life, micro-size and lightweight are required. The working principle of a betavoltaic device is similar to a photovoltaic device; they differ only in that the electron hole pairs (EHPs) are generated in the device by electrons instead of photons. In this study, the performance of a betavoltaic device fabricated from gallium nitride (GaN) is investigated for beta particle energies equivalent to Tritium (3H) and Nickel-63 (N63) beta sources. GaN is an attractive choice for fabricating betavoltaic devices due to its wide band gap and radiation resistance. Another advantage GaN has is that it can be alloyed with aluminum (Al) to further increase the bandgap, resulting in a higher output power and increased efficiency. Betavoltaic devices were fabricated on p-i-n GaN structures grown by metalorganic chemical vapor deposition (MOCVD). The devices were characterized using current - voltage (IV) measurements without illumination (light or beta), using a laser driven light source, and under an electron beam. Dark IV measurements showed a turn on-voltage of ~ 3.4 V, specific-on-resistance of 15.1 m O-cm2, and a leakage current of 0.5 mA at -- 10 V. A clear photo-response was observed when IV curves were measured for these devices under a light source at a wavelength of 310 nm (4.0 eV). These devices were tested under an electron beam in order to evaluate their behavior as betavoltaic microbatteries without using radioactive materials. Output power of 70 nW and 640 nW with overall efficiencies of 1.2% and 4.0% were determined at the average energy emission of 3H (5.6 keV) and 63N (17 keV) respectively.
Characterization of Lateral Structure of the p-i-n Diode for Thin-Film Silicon Solar Cell.
Kiaee, Zohreh; Joo, Seung Ki
2018-03-01
The lateral structure of the p-i-n diode was characterized for thin-film silicon solar cell application. The structure can benefit from a wide intrinsic layer, which can improve efficiency without increasing cell thickness. Compared with conventional thin-film p-i-n cells, the p-i-n diode lateral structure exploited direct light irradiation on the absorber layer, one-side contact, and bifacial irradiation. Considering the effect of different carrier lifetimes and recombinations, we calculated efficiency parameters by using a commercially available simulation program as a function of intrinsic layer width, as well as the distance between p/i or n/i junctions to contacts. We then obtained excellent parameter values of 706.52 mV open-circuit voltage, 24.16 mA/Cm2 short-circuit current, 82.66% fill factor, and 14.11% efficiency from a lateral cell (thickness = 3 μm; intrinsic layer width = 53 μm) in monofacial irradiation mode (i.e., only sunlight from the front side was considered). Simulation results of the cell without using rear-side reflector in bifacial irradiation mode showed 11.26% front and 9.72% rear efficiencies. Our findings confirmed that the laterally structured p-i-n cell can be a potentially powerful means for producing highly efficient, thin-film silicon solar cells.
DEFF Research Database (Denmark)
Gajda, A.; Da Ros, Francesco; Porto da Silva, Edson
2018-01-01
A 1-dB Q-factor improvement through optical phase conjugation in a silicon waveguide with a lateral p-i-n diode enables BER
The 1/f noise in a p-i-n diode and in a diode laser below threshold
Fronen, R.J.; Hooge, F.N.
1991-01-01
--A theoretical treatment is given of number fluctuations induced by mobility fluctuations in the intrinsic region of a p-i-n diode. Mobility fluctuations lead to fluctuations in voltage across the intrinsic region. In the a.c. short-circuit situation, fluctuations across the intrinsic region result
Tunnelling and relaxation in semiconductor double quantum wells
International Nuclear Information System (INIS)
Ferreira, R.; Bastard, G.
1997-01-01
Double quantum wells are among the simplest semiconductor heterostructures exhibiting tunnel coupling. The existence of a quantum confinement effect for the energy levels of a narrow single quantum well has been largely studied. In double quantum wells, in addition to these confinement effects which characterize the levels of the isolated wells, one faces the problem of describing the eigenstates of systems interacting weakly through a potential barrier. In addition, the actual structures differ from the ideal systems studied in the quantum mechanics textbooks in many aspects. The presence of defects leads, for instance, to an irreversible time evolution for a population of photocreated carriers. This irreversible transfer is now clearly established experimentally. The resonant behaviour of the transfer has also been evidenced, from the study of biased structures. If the existence of an interwell transfer is now clearly established from the experimental point of view, its theoretical description, however, is not fully satisfactory. This review focuses on the theoretical description of the energy levels and of the interwell assisted transfer in double quantum wells. We shall firstly outline the problem of tunnel coupling in semiconductor heterostructures and then discuss the single particle and exciton eigenstates in double quantum wells. In the remaining part of the review we shall present and critically review a few theoretical models used to describe the assisted interwell transfer in these structures. (author)
Optimal tunneling enhances the quantum photovoltaic effect in double quantum dots
International Nuclear Information System (INIS)
Wang, Chen; Cao, Jianshu; Ren, Jie
2014-01-01
We investigate the quantum photovoltaic effect in double quantum dots by applying the nonequilibrium quantum master equation. A drastic suppression of the photovoltaic current is observed near the open circuit voltage, which leads to a large filling factor. We find that there always exists an optimal inter-dot tunneling that significantly enhances the photovoltaic current. Maximal output power will also be obtained around the optimal inter-dot tunneling. Moreover, the open circuit voltage behaves approximately as the product of the eigen-level gap and the Carnot efficiency. These results suggest a great potential for double quantum dots as efficient photovoltaic devices
Local Gate Control of a Carbon Nanotube Double Quantum Dot
2016-04-04
describ- ing the levitation . Quantitative comparisons are made difficult by the complicated aniso- tropy of the nematic’s viscoelasticity (21). However...director fields. For example, as a straightforward extension of the levitation , a liquid crystal that twists through many periods (such as a cholesteric...Nanotube Double Quantum Dot N. Mason,*† M. J. Biercuk,* C. M. Marcus† We have measured carbon nanotube quantum dots with multiple electro- static gates and
Double stochastic matrices in quantum mechanics
International Nuclear Information System (INIS)
Louck, J.D.
1997-01-01
The general set of doubly stochastic matrices of order n corresponding to ordinary nonrelativistic quantum mechanical transition probability matrices is given. Lande's discussion of the nonquantal origin of such matrices is noted. Several concrete examples are presented for elementary and composite angular momentum systems with the focus on the unitary symmetry associated with such systems in the spirit of the recent work of Bohr and Ulfbeck. Birkhoff's theorem on doubly stochastic matrices of order n is reformulated in a geometrical language suitable for application to the subset of quantum mechanical doubly stochastic matrices. Specifically, it is shown that the set of points on the unit sphere in cartesian n'-space is subjective with the set of doubly stochastic matrices of order n. The question is raised, but not answered, as to what is the subset of points of this unit sphere that correspond to the quantum mechanical transition probability matrices, and what is the symmetry group of this subset of matrices
Andreev molecules in semiconductor nanowire double quantum dots.
Su, Zhaoen; Tacla, Alexandre B; Hocevar, Moïra; Car, Diana; Plissard, Sébastien R; Bakkers, Erik P A M; Daley, Andrew J; Pekker, David; Frolov, Sergey M
2017-09-19
Chains of quantum dots coupled to superconductors are promising for the realization of the Kitaev model of a topological superconductor. While individual superconducting quantum dots have been explored, control of longer chains requires understanding of interdot coupling. Here, double quantum dots are defined by gate voltages in indium antimonide nanowires. High transparency superconducting niobium titanium nitride contacts are made to each of the dots in order to induce superconductivity, as well as probe electron transport. Andreev bound states induced on each of dots hybridize to define Andreev molecular states. The evolution of these states is studied as a function of charge parity on the dots, and in magnetic field. The experiments are found in agreement with a numerical model.Quantum dots in a nanowire are one possible approach to creating a solid-state quantum simulator. Here, the authors demonstrate the coupling of electronic states in a double quantum dot to form Andreev molecule states; a potential building block for longer chains suitable for quantum simulation.
Energy Technology Data Exchange (ETDEWEB)
Lanore, J [Commissariat a l' Energie Atomique, Fontenay-aux-Roses (France). Centre d' Etudes Nucleaires
1964-06-01
Irradiation of silicon P.I.N. junction has been studied primarily for the purpose of developing a radiation damage dosimeter, but also for the purpose of investigating silicon itself. It is known that the rate of recombination of electrons and holes is a linear function of defects introduced by neutron irradiation. Two methods have been used to measure that rate of recombination: forward characteristic measurements, recovery time measurements. In order to explain how these two parameters depend on recombination rate we have given a theory of the P.I.N. junction. We have also given an idea of the carrier lifetime dependence versus temperature. Annealing effects in the range of 70 to 700 K have also been studied, we found five annealing stages with corresponding activation energies. As an application for these studies, we developed a radiation damage dosimeter with which we made several experiments in facilities such as Naiade or Marias. (author) [French] L'irradiation de structures P.I.N. etait faite dans le but d'etudier principalement la mise au point d'un dosimetre a ''radiation damage'' et aussi pour etudier plus profondement le silicium lui-meme. On sait que le taux de recombinaison electrons-trous est une fonction lineaire du taux de defauts introduits par irradiation aux neutrons. Deux methodes ont ete utilisees pour atteindre ce taux de recombinaison: mesures de la caracteristique directe, mesures du temps de retournement. Pour expliquer de quelle facon ces parametres dependent du taux de recombinaison. Nous avons donne une theorie de la jonction P.I.N. Nous avons aussi donne l'allure des variations du temps de vie des porteurs en fonction de la temperature. Nous avons d'autre part effectue des recuits entre 70 et 700 K, domaine dans lequel nous avons trouve cinq etapes de ''guerison'' avec les energies d'activation correspondantes. En application de ces etudes nous avons mis ou point un dosimetre a ''radiation damage'' avec lequel nous avons effectue des
Energy Technology Data Exchange (ETDEWEB)
Lanore, J. [Commissariat a l' Energie Atomique, Fontenay-aux-Roses (France). Centre d' Etudes Nucleaires
1964-06-01
Irradiation of silicon P.I.N. junction has been studied primarily for the purpose of developing a radiation damage dosimeter, but also for the purpose of investigating silicon itself. It is known that the rate of recombination of electrons and holes is a linear function of defects introduced by neutron irradiation. Two methods have been used to measure that rate of recombination: forward characteristic measurements, recovery time measurements. In order to explain how these two parameters depend on recombination rate we have given a theory of the P.I.N. junction. We have also given an idea of the carrier lifetime dependence versus temperature. Annealing effects in the range of 70 to 700 K have also been studied, we found five annealing stages with corresponding activation energies. As an application for these studies, we developed a radiation damage dosimeter with which we made several experiments in facilities such as Naiade or Marias. (author) [French] L'irradiation de structures P.I.N. etait faite dans le but d'etudier principalement la mise au point d'un dosimetre a ''radiation damage'' et aussi pour etudier plus profondement le silicium lui-meme. On sait que le taux de recombinaison electrons-trous est une fonction lineaire du taux de defauts introduits par irradiation aux neutrons. Deux methodes ont ete utilisees pour atteindre ce taux de recombinaison: mesures de la caracteristique directe, mesures du temps de retournement. Pour expliquer de quelle facon ces parametres dependent du taux de recombinaison. Nous avons donne une theorie de la jonction P.I.N. Nous avons aussi donne l'allure des variations du temps de vie des porteurs en fonction de la temperature. Nous avons d'autre part effectue des recuits entre 70 et 700 K, domaine dans lequel nous avons trouve cinq etapes de ''guerison'' avec les energies d'activation correspondantes. En application de ces etudes nous avons mis ou point un
Oscillatory magnetoconductance of quantum double-well channels
International Nuclear Information System (INIS)
Rojo, A.G.; Kumar, N.; Balseiro, C.A.
1988-07-01
The recently observed flux-periodic interference effect between parallel quantum double-well channels is theoretically studied in a discrete model that takes into account tunneling between channels. We obtain oscillatory magnetoconductance with small modulations which is attributable to the tunneling. Our treatment includes the effect of evanescent modes. (author). 7 refs, 2 figs
Bose Condensation of Interwell Excitons in Double Quantum Wells
DEFF Research Database (Denmark)
Larionov, A. V.; Timofeev, V. B.; Ni, P. A.
2002-01-01
The luminescence of interwell excitons in double quantum wells GaAs/AlGaAs (n–i–n heterostructures) with large-scale fluctuations of random potential in the heteroboundary planes was studied. The properties of excitons whose photoexcited electron and hole are spatially separated in the neighboring...
Electron-longitudinal-acoustic-phonon scattering in double-quantum-dot based quantum gates
International Nuclear Information System (INIS)
Zhao Peiji; Woolard, Dwight L.
2008-01-01
We propose a nanostructure design which can significantly suppress longitudinal-acoustic-phonon-electron scattering in double-quantum-dot based quantum gates for quantum computing. The calculated relaxation rates vs. bias voltage exhibit a double-peak feature with a minimum approaching 10 5 s -1 . In this matter, the energy conservation law prohibits scattering contributions from phonons with large momenta; furthermore, increasing the barrier height between the double quantum dots reduces coupling strength between the dots. Hence, the joint action of the energy conservation law and the decoupling greatly reduces the scattering rates. The degrading effects of temperatures can be reduced simply by increasing the height of the barrier between the dots
Simulation of Si P-i-N diodes for use in a positron emission tomography detector module
International Nuclear Information System (INIS)
Bailey, M.J.; University of Wollongong, NSW; Rosenfeld, A.; Lerch, M.; Taylor, G.; Heiser, G.
2000-01-01
Full text: Current Positron Emission Tomography (PET) systems consist of scintillation crystals optically coupled to photomultiplier tubes with associated electronics used to detect photons generated within the scintillator. The cost of photomultiplier tubes (PMTs) is considerable and is the major factor in the cost of PET systems. It has been suggested that Si P-i-N diodes can replace PMTs and provide Depth of Interaction (DOI) information for improved spatial resolution. Si P-i-N diodes of 25mm x 300μm and 3mm x 300μm cross sectional area were simulated using a 2D Monte Carlo program (PClD V5) from the UNSW photovoltics group. The diffusion lengths were varied from 0.5μm to 5μm and the charge collection characteristics of the diodes were observed. A 400nm monochromatic light source was used for the excitation as an approximation of the mean wavelength output from LSO crystal. The diodes were reverse biased with voltages 40V, 20V and 10V. The optimum diffusion length of up to 2μm and bias voltage of 40V were determined using the electric field, current density, carrier density and potential distribution results. These parameters will be used for the design of a device for optimal charge collection capabilities for the wavelengths encountered in PET applications. Further studies need to be conducted using spectra from LSO rather than a monochromatic source. The response of various Si P-i-N diodes to a monochromatic light source have been modeled in order to design a device for application in a PET detector module for DOI measurements. The charge collection within the first 2μm has been emphasized due to the strong absorption of photons from LSO near the surface.Copyright (2000) Australasian College of Physical Scientists and Engineers in Medicine
QCAD simulation and optimization of semiconductor double quantum dots
Energy Technology Data Exchange (ETDEWEB)
Nielsen, Erik; Gao, Xujiao; Kalashnikova, Irina; Muller, Richard Partain; Salinger, Andrew Gerhard; Young, Ralph Watson
2013-12-01
We present the Quantum Computer Aided Design (QCAD) simulator that targets modeling quantum devices, particularly silicon double quantum dots (DQDs) developed for quantum qubits. The simulator has three di erentiating features: (i) its core contains nonlinear Poisson, e ective mass Schrodinger, and Con guration Interaction solvers that have massively parallel capability for high simulation throughput, and can be run individually or combined self-consistently for 1D/2D/3D quantum devices; (ii) the core solvers show superior convergence even at near-zero-Kelvin temperatures, which is critical for modeling quantum computing devices; (iii) it couples with an optimization engine Dakota that enables optimization of gate voltages in DQDs for multiple desired targets. The Poisson solver includes Maxwell- Boltzmann and Fermi-Dirac statistics, supports Dirichlet, Neumann, interface charge, and Robin boundary conditions, and includes the e ect of dopant incomplete ionization. The solver has shown robust nonlinear convergence even in the milli-Kelvin temperature range, and has been extensively used to quickly obtain the semiclassical electrostatic potential in DQD devices. The self-consistent Schrodinger-Poisson solver has achieved robust and monotonic convergence behavior for 1D/2D/3D quantum devices at very low temperatures by using a predictor-correct iteration scheme. The QCAD simulator enables the calculation of dot-to-gate capacitances, and comparison with experiment and between solvers. It is observed that computed capacitances are in the right ballpark when compared to experiment, and quantum con nement increases capacitance when the number of electrons is xed in a quantum dot. In addition, the coupling of QCAD with Dakota allows to rapidly identify which device layouts are more likely leading to few-electron quantum dots. Very efficient QCAD simulations on a large number of fabricated and proposed Si DQDs have made it possible to provide fast feedback for design
International Nuclear Information System (INIS)
Hong, W.S.; Zhong, F.; Mireshghi, A.; Perez-Mendez, V.
1999-01-01
The performance of amorphous silicon p-i-n diodes as radiation detectors in terms of signal amplitude can be greatly improved when there is a built-in signal gain mechanism. The authors describe an avalanche gain mechanism which is achieved by introducing stacked intrinsic, p-type, and n-type layers into the diode structure. They replaced the intrinsic layer of the conventional p-i-n diode with i 1 -p-i 2 -n-i 3 multilayers. The i 2 layer (typically 1 ∼ 3 microm) achieves an electric field > 10 6 V/cm, while maintaining the p-i interfaces to the metallic contact at electric fields 4 V/cm, when the diode is fully depleted. For use in photo-diode applications the whole structure is less than 10 microm thick. Avalanche gains of 10 ∼ 50 can be obtained when the diode is biased to ∼ 500 V. Also, dividing the electrodes to strips of 2 microm width and 20 microm pitch reduced the leakage current up to an order of magnitude, and increased light transmission without creating inactive regions
Simulation for spectral response of solar-blind AlGaN based p-i-n photodiodes
Xue, Shiwei; Xu, Jintong; Li, Xiangyang
2015-04-01
In this article, we introduced how to build a physical model of refer to the device structure and parameters. Simulations for solar-blind AlGaN based p-i-n photodiodes spectral characteristics were conducted in use of Silvaco TCAD, where device structure and parameters are comprehensively considered. In simulation, the effects of polarization, Urbach tail, mobility, saturated velocities and lifetime in AlGaN device was considered. Especially, we focused on how the concentration-dependent Shockley-Read-Hall (SRH) recombination model affects simulation results. By simulating, we analyzed the effects in spectral response caused by TAUN0 and TAUP0, and got the values of TAUN0 and TAUP0 which can bring a result coincides with test results. After that, we changed their values and made the simulation results especially the part under 255 nm performed better. In conclusion, the spectral response between 200 nm and 320 nm of solar-blind AlGaN based p-i-n photodiodes were simulated and compared with test results. We also found that TAUN0 and TAUP0 have a large impact on spectral response of AlGaN material.
Dephasing and hyperfine interaction in carbon nanotubes double quantum dots
DEFF Research Database (Denmark)
Reynoso, Andres Alejandro; Flensberg, Karsten
2012-01-01
We study theoretically the return probability experiment, which is used to measure the dephasing time T-2*, in a double quantum dot (DQD) in semiconducting carbon nanotubes with spin-orbit coupling and disorder-induced valley mixing. Dephasing is due to hyperfine interaction with the spins of the C...... with these for DQDs in clean nanotubes, whereas the disorder effect is always relevant when the magnetic field is perpendicular to the nanotube axis....
Naderi, Ali
2017-12-01
In this paper, an efficient structure with lightly doped drain region is proposed for p-i-n graphene nanoribbon field effect transistors (LD-PIN-GNRFET). Self-consistent solution of Poisson and Schrödinger equation within Nonequilibrium Green’s function (NEGF) formalism has been employed to simulate the quantum transport of the devices. In proposed structure, source region is doped by constant doping density, channel is an intrinsic GNR, and drain region contains two parts with lightly and heavily doped doping distributions. The important challenge in tunneling devices is obtaining higher current ratio. Our simulations demonstrate that LD-PIN-GNRFET is a steep slope device which not only reduces the leakage current and current ratio but also enhances delay, power delay product, and cutoff frequency in comparison with conventional PIN GNRFETs with uniform distribution of impurity and with linear doping profile in drain region. Also, the device is able to operate in higher drain-source voltages due to the effectively reduced electric field at drain side. Briefly, the proposed structure can be considered as a more reliable device for low standby-power logic applications operating at higher voltages and upper cutoff frequencies.
A Needle-Type p-i-n Junction Semiconductor Detector for In-Vivo Measurement of Beta Tracer Activity
Energy Technology Data Exchange (ETDEWEB)
Lauber, A; Rosencrantz, B
1964-10-15
A miniature detector probe has been developed for in-vivo detection of beta tracer activity. A lithium-drifted p-i-n detector shaped as a cylinder 0.9 mm in diameter and 3 mm long acts as the sensing element. The detector is encased in a stainless steel tube 50 mm long, fastened to a holder fitted with a miniature coaxial contact. The free end of the tube has a syringe-like, entirely tight tip. The steel tube has an outer diameter of 1.4 mm except for 10 mm at the free end where the outer diameter is 1.1 mm corresponding to a wall thickness of 005 mm. The detector is placed in the 1.1 mm part of the tube. The construction and the properties of the probe are described.
Resonant metallic nanostructure for enhanced two-photon absorption in a thin GaAs p-i-n diode
Energy Technology Data Exchange (ETDEWEB)
Portier, Benjamin; Pardo, Fabrice; Péré-Laperne, Nicolas; Steveler, Emilie; Dupuis, Christophe; Bardou, Nathalie; Lemaître, Aristide; Pelouard, Jean-Luc, E-mail: jean-luc.pelouard@lpn.cnrs.fr [Laboratoire de Photonique et de Nanostructures (LPN-CNRS), Route de Nozay, 91460 Marcoussis (France); Vest, Benjamin; Jaeck, Julien; Rosencher, Emmanuel [ONERA The French Aerospace Lab, Chemin de la Hunière, F-91760 Palaiseau (France); Haïdar, Riad [ONERA The French Aerospace Lab, Chemin de la Hunière, F-91760 Palaiseau (France); École Polytechnique, Département de Physique, F-91128 Palaiseau (France)
2014-07-07
Degenerate two-photon absorption (TPA) is investigated in a 186 nm thick gallium arsenide (GaAs) p-i-n diode embedded in a resonant metallic nanostructure. The full device consists in the GaAs layer, a gold subwavelength grating on the illuminated side, and a gold mirror on the opposite side. For TM-polarized light, the structure exhibits a resonance close to 1.47 μm, with a confined electric field in the intrinsic region, far from the metallic interfaces. A 109 times increase in photocurrent compared to a non-resonant device is obtained experimentally, while numerical simulations suggest that both gain in TPA-photocurrent and angular dependence can be further improved. For optimized grating parameters, a maximum gain of 241 is demonstrated numerically and over incidence angle range of (−30°; +30°).
Resonant metallic nanostructure for enhanced two-photon absorption in a thin GaAs p-i-n diode
International Nuclear Information System (INIS)
Portier, Benjamin; Pardo, Fabrice; Péré-Laperne, Nicolas; Steveler, Emilie; Dupuis, Christophe; Bardou, Nathalie; Lemaître, Aristide; Pelouard, Jean-Luc; Vest, Benjamin; Jaeck, Julien; Rosencher, Emmanuel; Haïdar, Riad
2014-01-01
Degenerate two-photon absorption (TPA) is investigated in a 186 nm thick gallium arsenide (GaAs) p-i-n diode embedded in a resonant metallic nanostructure. The full device consists in the GaAs layer, a gold subwavelength grating on the illuminated side, and a gold mirror on the opposite side. For TM-polarized light, the structure exhibits a resonance close to 1.47 μm, with a confined electric field in the intrinsic region, far from the metallic interfaces. A 109 times increase in photocurrent compared to a non-resonant device is obtained experimentally, while numerical simulations suggest that both gain in TPA-photocurrent and angular dependence can be further improved. For optimized grating parameters, a maximum gain of 241 is demonstrated numerically and over incidence angle range of (−30°; +30°).
A Needle-Type p-i-n Junction Semiconductor Detector for In-Vivo Measurement of Beta Tracer Activity
International Nuclear Information System (INIS)
Lauber, A.; Rosencrantz, B.
1964-10-01
A miniature detector probe has been developed for in-vivo detection of beta tracer activity. A lithium-drifted p-i-n detector shaped as a cylinder 0.9 mm in diameter and 3 mm long acts as the sensing element. The detector is encased in a stainless steel tube 50 mm long, fastened to a holder fitted with a miniature coaxial contact. The free end of the tube has a syringe-like, entirely tight tip. The steel tube has an outer diameter of 1.4 mm except for 10 mm at the free end where the outer diameter is 1.1 mm corresponding to a wall thickness of 005 mm. The detector is placed in the 1.1 mm part of the tube. The construction and the properties of the probe are described
Phase regeneration of DPSK signals in a silicon waveguide with reverse-biased p-i-n junction
DEFF Research Database (Denmark)
Da Ros, Francesco; Vukovic, Dragana; Gajda, Andrzej
2014-01-01
Phase regeneration of differential phase-shift keying (DPSK) signals is demonstrated using a silicon waveguide as nonlinear medium for the first time. A p-i-n junction across the waveguide enables decreasing the nonlinear losses introduced by free-carrier absorption (FCA), thus allowing phase......-sensitive extinction ratios as high as 20 dB to be reached under continuous-wave (CW) pumping operation. Furthermore the regeneration properties are investigated under dynamic operation for a 10-Gb/s DPSK signal degraded by phase noise, showing receiver sensitivity improvements above 14 dB. Different phase noise...... frequencies and amplitudes are examined, resulting in an improvement of the performance of the regenerated signal in all the considered cases....
BPW34 Commercial p-i-n Diodes for High-Level 1-MeV Neutron Equivalent Fluence Monitoring
Ravotti, F; Moll, M; Saigne, F
2008-01-01
The BPW34 p-i-n diode was characterized at CERN in view of its utilization as radiation monitor at the LHC to cover the broad 1-MeV neutron equivalent fluence (Phieq) range expected for the LHC machine and experiments during operation. Electrical measurements for both forward and reverse bias were used to characterize the device and to understand its behavior under irradiation. When the device is powered forward, a sensitivity to fast hadrons for Phieq > 2 times1012 cm-2 has been observed. With increasing particle fluences the forward I- V characteristics of the diode shifts towards higher voltages. At Phieq > 3times1013 cm-2, the forward characteristic starts to bend back assuming a thyristor-like behavior. An explanation for this phenomenon is given in this article. Finally, detailed radiation-response curves for the forward bias-operation and annealing studies of the diode's forward voltage are presented for proton, neutron and gamma irradiation.
Decoherence in a double-slit quantum eraser
International Nuclear Information System (INIS)
Torres-Ruiz, F. A.; Lima, G.; Delgado, A.; Saavedra, C.; Padua, S.
2010-01-01
We study and experimentally implement a double-slit quantum eraser in the presence of a controlled decoherence mechanism. A two-photon state, produced in a spontaneous parametric down-conversion process, is prepared in a maximally entangled polarization state. A birefringent double slit is illuminated by one of the down-converted photons, and it acts as a single-photon two-qubits controlled-not gate that couples the polarization with the transversal momentum of these photons. The other photon, which acts as a which-path marker, is sent through a Mach-Zehnder-like interferometer. When the interferometer is partially unbalanced, it behaves as a controlled source of decoherence for polarization states of down-converted photons. We show the transition from wavelike to particle-like behavior of the signal photons crossing the double slit as a function of the decoherence parameter, which depends on the length path difference at the interferometer.
Connection between noise and quantum correlations in a double quantum dot
Bodoky, F.; Belzig, W.; Bruder, C.
We investigate the current and noise characteristics of a double quantum dot system. The strong correlations induced by the Coulomb interaction and the Pauli principle create entangled two-electron states and lead to signatures in the transport properties. We show that the interaction parameter Ø,
Computer-automated tuning of semiconductor double quantum dots into the single-electron regime
Energy Technology Data Exchange (ETDEWEB)
Baart, T. A.; Vandersypen, L. M. K. [QuTech, Delft University of Technology, P.O. Box 5046, 2600 GA Delft (Netherlands); Kavli Institute of Nanoscience, Delft University of Technology, P.O. Box 5046, 2600 GA Delft (Netherlands); Eendebak, P. T. [QuTech, Delft University of Technology, P.O. Box 5046, 2600 GA Delft (Netherlands); Netherlands Organisation for Applied Scientific Research (TNO), P.O. Box 155, 2600 AD Delft (Netherlands); Reichl, C.; Wegscheider, W. [Solid State Physics Laboratory, ETH Zürich, 8093 Zürich (Switzerland)
2016-05-23
We report the computer-automated tuning of gate-defined semiconductor double quantum dots in GaAs heterostructures. We benchmark the algorithm by creating three double quantum dots inside a linear array of four quantum dots. The algorithm sets the correct gate voltages for all the gates to tune the double quantum dots into the single-electron regime. The algorithm only requires (1) prior knowledge of the gate design and (2) the pinch-off value of the single gate T that is shared by all the quantum dots. This work significantly alleviates the user effort required to tune multiple quantum dot devices.
Computer-automated tuning of semiconductor double quantum dots into the single-electron regime
Baart, T.A.; Eendebak, P.T.; Reichl, C.; Wegscheider, W.; Vandersypen, L.M.K.
2016-01-01
We report the computer-automated tuning of gate-defined semiconductor double quantum dots in GaAs heterostructures. We benchmark the algorithm by creating three double quantum dots inside a linear array of four quantum dots. The algorithm sets the correct gate voltages for all the gates to tune the
Mekki, J; Glaser, M; Moll, M; Dusseau, L
2010-01-01
The effect of radiation damage on Silicon p-i-n diodes has been studied. I-V characteristics of BPW34FS silicon p-i-n diodes irradiated with 24 GeV/c protons up to 6.3 x 10(15) n(eq)/cm(2) have been measured and analyzed. A parameterization predicting the radiation response in the fluence range relevant for the use of the diodes as radiation monitors in Super-LHC experiments is presented.
Some double resonance and multiple quantum NMR studies in solids
Energy Technology Data Exchange (ETDEWEB)
Wemmer, D.E.
1978-08-01
The first section of this work presents the theory and experimental applications to analysis of molecular motion of chemical shielding lineshapes obtained with high resolution double resonance NMR techniques. Analysis of /sup 13/C powder lineshapes in hexamethylbenzene (HMB) and decamethylferrocene (DMFe) show that these molecules reorient in a jumping manner about the symmetry axis. Analysis of proton chemical shielding lineshapes of residual protons in heavy ice (D/sub 2/O) show that protons are exchanged among the tetrahedral positions of neighboring oxygen atoms, consistent with motion expected from defect migration. The second section describes the application of Fourier Transform Double Quantum NMR to measurement of chemical shielding of deuterium in powder samples. Studies of partially deuterated benzene and ferrocene give equal shielding anisotropies, ..delta..sigma = -6.5 ppM. Theoretical predictions and experimental measurements of dipolar couplings between deuterons using FTDQ NMR are presented. Crystals of BaClO/sub 3/.D/sub 2/O, ..cap alpha..,..beta.. d-2 HMB and ..cap alpha..,..beta..,..gamma.. d-3 HMB were studied, as were powders of d-2 HMB and anisic acid. The third section discusses general multiple quantum spectroscopy in dipolar coupled spin systems. Theoretical description is made for creation and detection of coherences between states without quantum number selection rules ..delta..m = +-1. Descriptions of techniques for partial selectivity of order in preparation and detection of multiple quantum coherences are made. The effects on selectivity and resolution of echo pulses during multiple quantum experiments are discussed. Experimental observation of coherences up to order 6 have been made in a sample of benzene dissolved in a liquid crystal. Experimental verifications of order selection and echo generation have been made.
Some double resonance and multiple quantum NMR studies in solids
International Nuclear Information System (INIS)
Wemmer, D.E.
1978-08-01
The first section of this work presents the theory and experimental applications to analysis of molecular motion of chemical shielding lineshapes obtained with high resolution double resonance NMR techniques. Analysis of 13 C powder lineshapes in hexamethylbenzene (HMB) and decamethylferrocene (DMFe) show that these molecules reorient in a jumping manner about the symmetry axis. Analysis of proton chemical shielding lineshapes of residual protons in heavy ice (D 2 O) show that protons are exchanged among the tetrahedral positions of neighboring oxygen atoms, consistent with motion expected from defect migration. The second section describes the application of Fourier Transform Double Quantum NMR to measurement of chemical shielding of deuterium in powder samples. Studies of partially deuterated benzene and ferrocene give equal shielding anisotropies, Δsigma = -6.5 ppM. Theoretical predictions and experimental measurements of dipolar couplings between deuterons using FTDQ NMR are presented. Crystals of BaClO 3 .D 2 O, α,β d-2 HMB and α,β,γ d-3 HMB were studied, as were powders of d-2 HMB and anisic acid. The third section discusses general multiple quantum spectroscopy in dipolar coupled spin systems. Theoretical description is made for creation and detection of coherences between states without quantum number selection rules Δm = +-1. Descriptions of techniques for partial selectivity of order in preparation and detection of multiple quantum coherences are made. The effects on selectivity and resolution of echo pulses during multiple quantum experiments are discussed. Experimental observation of coherences up to order 6 have been made in a sample of benzene dissolved in a liquid crystal. Experimental verifications of order selection and echo generation have been made
Wei, Hai-Rui; Deng, Fu-Guo
2013-07-29
We investigate the possibility of achieving scalable photonic quantum computing by the giant optical circular birefringence induced by a quantum-dot spin in a double-sided optical microcavity as a result of cavity quantum electrodynamics. We construct a deterministic controlled-not gate on two photonic qubits by two single-photon input-output processes and the readout on an electron-medium spin confined in an optical resonant microcavity. This idea could be applied to multi-qubit gates on photonic qubits and we give the quantum circuit for a three-photon Toffoli gate. High fidelities and high efficiencies could be achieved when the side leakage to the cavity loss rate is low. It is worth pointing out that our devices work in both the strong and the weak coupling regimes.
Bound magnetic polaron in a semimagnetic double quantum well
Kalpana, P.; Jayakumar, K.
2017-09-01
The effect of different combinations of the concentration of Mn2+ ion in the Quantum well Cd1-xinMnxin Te and the barrier Cd1-xoutMnxout Te on the Bound Magnetic Polaron (BMP) in a Diluted Magnetic Semiconductors (DMS) Double Quantum Well (DQW) has been investigated. The Schrodinger equation is solved variationally in the effective mass approximation through which the Spin Polaronic Shift (SPS) due to the formation of BMP has been estimated for various locations of the donor impurity in the DQW. The results show that the effect of the increase of Mn2+ ion composition with different combinations on SPS is predominant for On Centre Well (OCW) impurity when compared to all other impurity locations when there is no application of magnetic field (γ = 0), γ being a dimensionless parameter for the magnetic field, and the same is predominant for On Centre Barrier (OCB) impurity with the application of external magnetic field (γ = 0.15).
Pumped double quantum dot with spin-orbit coupling
Directory of Open Access Journals (Sweden)
Sherman Eugene
2011-01-01
Full Text Available Abstract We study driven by an external electric field quantum orbital and spin dynamics of electron in a one-dimensional double quantum dot with spin-orbit coupling. Two types of external perturbation are considered: a periodic field at the Zeeman frequency and a single half-period pulse. Spin-orbit coupling leads to a nontrivial evolution in the spin and orbital channels and to a strongly spin- dependent probability density distribution. Both the interdot tunneling and the driven motion contribute into the spin evolution. These results can be important for the design of the spin manipulation schemes in semiconductor nanostructures. PACS numbers: 73.63.Kv,72.25.Dc,72.25.Pn
Ground state of the parallel double quantum dot system.
Zitko, Rok; Mravlje, Jernej; Haule, Kristjan
2012-02-10
We resolve the controversy regarding the ground state of the parallel double quantum dot system near half filling. The numerical renormalization group predicts an underscreened Kondo state with residual spin-1/2 magnetic moment, ln2 residual impurity entropy, and unitary conductance, while the Bethe ansatz solution predicts a fully screened impurity, regular Fermi-liquid ground state, and zero conductance. We calculate the impurity entropy of the system as a function of the temperature using the hybridization-expansion continuous-time quantum Monte Carlo technique, which is a numerically exact stochastic method, and find excellent agreement with the numerical renormalization group results. We show that the origin of the unconventional behavior in this model is the odd-symmetry "dark state" on the dots.
Diffusion thermopower of a serial double quantum dot
International Nuclear Information System (INIS)
Thierschmann, H; Henke, M; Knorr, J; Maier, L; Buhmann, H; Molenkamp, L W; Heyn, C; Hansen, W
2013-01-01
We have experimentally studied the diffusion thermopower of a serial double quantum dot, defined electrostatically in a GaAs/AlGaAs heterostructure. We present the thermopower stability diagram for a temperature difference ΔT = (20 ± 10) mK across the device and find a maximum thermovoltage signal of several μV in the vicinity of the triple points. Along a constant energy axis in this regime, the data show a characteristic pattern which is in agreement with Mott's relation and can be well understood within a model of sequential transport. (paper)
Toric codes and quantum doubles from two-body Hamiltonians
Energy Technology Data Exchange (ETDEWEB)
Brell, Courtney G; Bartlett, Stephen D; Doherty, Andrew C [Centre for Engineered Quantum Systems, School of Physics, University of Sydney, Sydney (Australia); Flammia, Steven T, E-mail: cbrell@physics.usyd.edu.au [Perimeter Institute for Theoretical Physics, Waterloo (Canada)
2011-05-15
We present here a procedure to obtain the Hamiltonians of the toric code and Kitaev quantum double models as the low-energy limits of entirely two-body Hamiltonians. Our construction makes use of a new type of perturbation gadget based on error-detecting subsystem codes. The procedure is motivated by a projected entangled pair states (PEPS) description of the target models, and reproduces the target models' behavior using only couplings that are natural in terms of the original Hamiltonians. This allows our construction to capture the symmetries of the target models.
Method of producing p-i-n structures by compensation of lithium ions from both side of silicon
International Nuclear Information System (INIS)
Muminov, R.A.; Radjapov, S.A.; Saymbetov, A.K.; Tursunkulov, O.M.; Pindurin, Yu.S.
2007-01-01
Full text: Semiconductor nuclear radiation detectors are needed to solve certain problems in nuclear spectroscopy. The development of efficiency detectors became possible with advances in growing high purify silicon single crystals with the required properties, satisfying the requirements for obtaining detectors based on them. One important requirement for obtaining detectors with sensitive area is that its resistance must be high. This is achieved by using the lithium ion drift process in the volume of the semiconductor detector. Thus it has been developed and created silicon semiconductor nuclear radiation detectors with vide range of diameter of sensitive area up to 100 mm and thickness (from 1mm to 10mm). At present work a new method for producing p-i-n structures was developed to decrease substantially the time required for compensation of silicon by lithium ions and to eliminate at the same time the negative consequences of holding the crystal at a high temperature and under a high voltage. Drift of lithium ions from two ends of prepared samples is conducted to a depth sufficient for the required compensation of the initial acceptor impurity in silicon. The method described above was used to fabricate a batch of Si(Li) detectors with a 1-10 mm thick and 10-110 mm in diameter sensitive region. The thickness of the sensitive region was determined by performing standard measurements and chemical pigmentation. Advantages of detectors are they have improved properties and less time for compensation of lithium ions. (authors)
Optoelectric Properties of GaInP p-i-n Solar Cells with Different i-Layer Thicknesses
Directory of Open Access Journals (Sweden)
Tsung-Shine Ko
2015-01-01
Full Text Available The optoelectric properties of GaInP p-i-n solar cells with different intrinsic layer (i-layer thicknesses from 0.25 to 1 μm were studied. Both emission intensity and full width at half maximum features of the photoluminescence spectrum indicate that the optimum i-layer thickness would be between 0.5 and 0.75 μm. The integrated current results of photocurrent experiment also point out that the samples with 0.5 to 0.75 μm i-layer thicknesses have optimum value around 156 nA. Electroreflectance measurements reveal that the built-in electric field strength of the sample gradually deviates from the theoretical value larger when i-layer thickness of the sample is thicker than 0.75 μm. I-V measurements also confirm crystal quality for whole samples by obtaining the information about short currents of photovoltaic performances. A series of experiments reflect that thicker i-layer structure would induce more defects generation lowering crystal quality.
Highly transparent front electrodes with metal fingers for p-i-n thin-film silicon solar cells
Directory of Open Access Journals (Sweden)
Moulin Etienne
2015-01-01
Full Text Available The optical and electrical properties of transparent conductive oxides (TCOs, traditionally used in thin-film silicon (TF-Si solar cells as front-electrode materials, are interlinked, such that an increase in TCO transparency is generally achieved at the cost of reduced lateral conductance. Combining a highly transparent TCO front electrode of moderate conductance with metal fingers to support charge collection is a well-established technique in wafer-based technologies or for TF-Si solar cells in the substrate (n-i-p configuration. Here, we extend this concept to TF-Si solar cells in the superstrate (p-i-n configuration. The metal fingers are used in conjunction with a millimeter-scale textured foil, attached to the glass superstrate, which provides an antireflective and retroreflective effect; the latter effect mitigates the shadowing losses induced by the metal fingers. As a result, a substantial increase in power conversion efficiency, from 8.7% to 9.1%, is achieved for 1-μm-thick microcrystalline silicon solar cells deposited on a highly transparent thermally treated aluminum-doped zinc oxide layer combined with silver fingers, compared to cells deposited on a state-of-the-art zinc oxide layer.
Quantum interference in laser-induced nonsequential double ionization
Quan, Wei; Hao, XiaoLei; Wang, YanLan; Chen, YongJu; Yu, ShaoGang; Xu, SongPo; Xiao, ZhiLei; Sun, RenPing; Lai, XuanYang; Hu, ShiLin; Liu, MingQing; Shu, Zheng; Wang, XiaoDong; Li, WeiDong; Becker, Wilhelm; Liu, XiaoJun; Chen, Jing
2017-09-01
Quantum interference plays an important role in various intense-laser-driven atomic phenomena, e.g., above-threshold ionization and high-order-harmonic generation, and provides a useful tool in ultrafast imaging of atomic and molecular structure and dynamics. However, it has eluded observation in nonsequential double ionization (NSDI), which serves as an ideal prototype to study electron-electron correlation. Thus far, NSDI usually could be well understood from a semiclassical perspective, where all quantum aspects have been ignored after the first electron has tunneled. Here we perform coincidence measurements for NSDI of xenon subject to laser pulses at 2400 nm. It is found that the intensity dependence of the asymmetry parameter between the yields in the second and fourth quadrants and those in the first and third quadrants of the electron-momentum-correlation distributions exhibits a peculiar fast oscillatory structure, which is beyond the scope of the semiclassical picture. Our theoretical analysis indicates that this oscillation can be attributed to interference between the contributions of different excited states in the recollision-excitation-with-subsequent-ionization channel. Our work demonstrates the significant role of quantum interference in NSDI and may create an additional pathway towards manipulation and imaging of the ultrafast atomic and molecular dynamics in intense laser fields.
International Nuclear Information System (INIS)
Fuochi, P.G.; Martelli, A.; Passerini, B.; Zambelli, M.
1988-01-01
Recombination centers introduced by irradiation with 12 MeV electrons in large area silicon diodes with p-i-n structure are studied with the Deep Level Transient Spectroscopy technique (DLTS). The effects of these levels on the electrical characteristics of the devices are related to their position Esub(t) in the silicon forbidden gap, their concentration and their electron capture cross section. Changes of defect configuration during an annealing process at 360 0 C have been observed and a detailed analysis of the DLTS spectra has shown a complex defect pattern. Four major recombination centers have been identified: Esub(c) - Esub(t) = 0.17 eV, Esub(c) - Esub(t) = 0.19 eV, Esub(c) -Esub(t) 0.31 eV, Esub(c) - Esub(t) = 0.39 eV, where Esub(c) is the energy corresponding to the lower limit of the conduction band. The first energy level, known as A-center, is the dominant recombination level controlling the minority carrier lifetime after room temperature irradiation. As the annealing proceeds the center at Esub(c) - Esub(t) = 0.31 eV becomes the dominant one. The complex structure of the centers has been studied and demonstrated with the aid of proper modelling implemented on a set of numerical simulation tools. In this way it has been possible to analyze more accurately the defect kinetics during annealing. The study of the defect behaviour during the annealing process has resulted in an improved application of electron irradiation as a standard production technique in the manufacturing process of high power devices. (author)
A compact 16-module camera using 64-pixel CsI(Tl)/Si p-i-n photodiode imaging modules
Choong, W.-S.; Gruber, G. J.; Moses, W. W.; Derenzo, S. E.; Holland, S. E.; Pedrali-Noy, M.; Krieger, B.; Mandelli, E.; Meddeler, G.; Wang, N. W.; Witt, E. K.
2002-10-01
We present a compact, configurable scintillation camera employing a maximum of 16 individual 64-pixel imaging modules resulting in a 1024-pixel camera covering an area of 9.6 cm/spl times/9.6 cm. The 64-pixel imaging module consists of optically isolated 3 mm/spl times/3 mm/spl times/5 mm CsI(Tl) crystals coupled to a custom array of Si p-i-n photodiodes read out by a custom integrated circuit (IC). Each imaging module plugs into a readout motherboard that controls the modules and interfaces with a data acquisition card inside a computer. For a given event, the motherboard employs a custom winner-take-all IC to identify the module with the largest analog output and to enable the output address bits of the corresponding module's readout IC. These address bits identify the "winner" pixel within the "winner" module. The peak of the largest analog signal is found and held using a peak detect circuit, after which it is acquired by an analog-to-digital converter on the data acquisition card. The camera is currently operated with four imaging modules in order to characterize its performance. At room temperature, the camera demonstrates an average energy resolution of 13.4% full-width at half-maximum (FWHM) for the 140-keV emissions of /sup 99m/Tc. The system spatial resolution is measured using a capillary tube with an inner diameter of 0.7 mm and located 10 cm from the face of the collimator. Images of the line source in air exhibit average system spatial resolutions of 8.7- and 11.2-mm FWHM when using an all-purpose and high-sensitivity parallel hexagonal holes collimator, respectively. These values do not change significantly when an acrylic scattering block is placed between the line source and the camera.
The Double-Well Potential in Quantum Mechanics: A Simple, Numerically Exact Formulation
Jelic, V.; Marsiglio, F.
2012-01-01
The double-well potential is arguably one of the most important potentials in quantum mechanics, because the solution contains the notion of a state as a linear superposition of "classical" states, a concept which has become very important in quantum information theory. It is therefore desirable to have solutions to simple double-well potentials…
Perturbative quantum gravity as a double copy of gauge theory.
Bern, Zvi; Carrasco, John Joseph M; Johansson, Henrik
2010-08-06
In a previous paper we observed that (classical) tree-level gauge-theory amplitudes can be rearranged to display a duality between color and kinematics. Once this is imposed, gravity amplitudes are obtained using two copies of gauge-theory diagram numerators. Here we conjecture that this duality persists to all quantum loop orders and can thus be used to obtain multiloop gravity amplitudes easily from gauge-theory ones. As a nontrivial test, we show that the three-loop four-point amplitude of N=4 super-Yang-Mills theory can be arranged into a form satisfying the duality, and by taking double copies of the diagram numerators we obtain the corresponding amplitude of N=8 supergravity. We also remark on a nonsupersymmetric two-loop test based on pure Yang-Mills theory resulting in gravity coupled to an antisymmetric tensor and dilaton.
Injection Locking of a Semiconductor Double Quantum Dot Micromaser.
Liu, Y-Y; Stehlik, J; Gullans, M J; Taylor, J M; Petta, J R
2015-11-01
Emission linewidth is an important figure of merit for masers and lasers. We recently demonstrated a semiconductor double quantum dot (DQD) micromaser where photons are generated through single electron tunneling events. Charge noise directly couples to the DQD energy levels, resulting in a maser linewidth that is more than 100 times larger than the Schawlow-Townes prediction. Here we demonstrate a linewidth narrowing of more than a factor 10 by locking the DQD emission to a coherent tone that is injected to the input port of the cavity. We measure the injection locking range as a function of cavity input power and show that it is in agreement with the Adler equation. The position and amplitude of distortion sidebands that appear outside of the injection locking range are quantitatively examined. Our results show that this unconventional maser, which is impacted by strong charge noise and electron-phonon coupling, is well described by standard laser models.
Twisted quantum double model of topological order with boundaries
Bullivant, Alex; Hu, Yuting; Wan, Yidun
2017-10-01
We generalize the twisted quantum double model of topological orders in two dimensions to the case with boundaries by systematically constructing the boundary Hamiltonians. Given the bulk Hamiltonian defined by a gauge group G and a 3-cocycle in the third cohomology group of G over U (1 ) , a boundary Hamiltonian can be defined by a subgroup K of G and a 2-cochain in the second cochain group of K over U (1 ) . The consistency between the bulk and boundary Hamiltonians is dictated by what we call the Frobenius condition that constrains the 2-cochain given the 3-cocyle. We offer a closed-form formula computing the ground-state degeneracy of the model on a cylinder in terms of the input data only, which can be naturally generalized to surfaces with more boundaries. We also explicitly write down the ground-state wave function of the model on a disk also in terms of the input data only.
Transient Dynamics of Double Quantum Dots Coupled to Two Reservoirs
Fukadai, Takahisa; Sasamoto, Tomohiro
2018-05-01
We study the time-dependent properties of double quantum dots coupled to two reservoirs using the nonequilibrium Green function method. For an arbitrary time-dependent bias, we derive an expression for the time-dependent electron density of a dot and several currents, including the current between the dots in the wide-band-limit approximation. For the special case of a constant bias, we calculate the electron density and the currents numerically. As a result, we find that these quantities oscillate and that the number of crests in a single period of the current from a dot changes with the bias voltage. We also obtain an analytical expression for the relaxation time, which expresses how fast the system converges to its steady state. From the expression, we find that the relaxation time becomes constant when the coupling strength between the dots is sufficiently large in comparison with the difference of coupling strength between the dots and the reservoirs.
Double Rashba Quantum Dots Ring as a Spin Filter
Directory of Open Access Journals (Sweden)
Chi Feng
2008-01-01
Full Text Available AbstractWe theoretically propose a double quantum dots (QDs ring to filter the electron spin that works due to the Rashba spin–orbit interaction (RSOI existing inside the QDs, the spin-dependent inter-dot tunneling coupling and the magnetic flux penetrating through the ring. By varying the RSOI-induced phase factor, the magnetic flux and the strength of the spin-dependent inter-dot tunneling coupling, which arises from a constant magnetic field applied on the tunneling junction between the QDs, a 100% spin-polarized conductance can be obtained. We show that both the spin orientations and the magnitude of it can be controlled by adjusting the above-mentioned parameters. The spin filtering effect is robust even in the presence of strong intra-dot Coulomb interactions and arbitrary dot-lead coupling configurations.
Resonant Tunneling in Photonic Double Quantum Well Heterostructures
Directory of Open Access Journals (Sweden)
Cox Joel
2010-01-01
Full Text Available Abstract Here, we study the resonant photonic states of photonic double quantum well (PDQW heterostructures composed of two different photonic crystals. The heterostructure is denoted as B/A/B/A/B, where photonic crystals A and B act as photonic wells and barriers, respectively. The resulting band structure causes photons to become confined within the wells, where they occupy discrete quantized states. We have obtained an expression for the transmission coefficient of the PDQW heterostructure using the transfer matrix method and have found that resonant states exist within the photonic wells. These resonant states occur in split pairs, due to a coupling between degenerate states shared by each of the photonic wells. It is observed that when the resonance energy lies at a bound photonic state and the two photonic quantum wells are far away from each other, resonant states appear in the transmission spectrum of the PDQW as single peaks. However, when the wells are brought closer together, coupling between bound photonic states causes an energy-splitting effect, and the transmitted states each have two peaks. Essentially, this means that the system can be switched between single and double transparent states. We have also observed that the total number of resonant states can be controlled by varying the width of the photonic wells, and the quality factor of transmitted peaks can be drastically improved by increasing the thickness of the outer photonic barriers. It is anticipated that the resonant states described here can be used to develop new types of photonic-switching devices, optical filters, and other optoelectronic devices.
Oxide double quantum dot - an answer to the qubit problem?
Yarlagadda, Sudhakar; Dey, Amit
We propose that oxide-based double quantum dots with only one electron (tunnelling between the dots) can be regarded as a qubit with little decoherence; these dots can possibly meet future challenges of miniaturization. The tunnelling of the eg electron between the dots and the attraction between the electron and the hole on adjacent dots can be modelled as an anisotropic Heisenberg interaction between two spins with the total z-component of the spins being zero. We study two anisotropically interacting spins coupled to optical phonons; we restrict our analysis to the regime of strong coupling to the environment, to the antiadiabatic region, and to the subspace with zero value for SzT (the z-component of the total spin). In the case where each spin is coupled to a different phonon bath, we assume that the system and the environment are initially uncorrelated (and form a simply separable state) in the polaronic frame of reference. By analyzing the polaron dynamics through a non-Markovian quantum master equation, we find that the system manifests a small amount of decoherence that decreases both with increasing nonadiabaticity and with enhancing strength of coupling g. Recently I got an invitation to visit Argonne National Lab from Jan./2106 to end of March/2016. I thought I would give a talk at APS March meeting. Please accept the submission.
Wei, Hai-Rui; Deng, Fu-Guo
2014-12-18
Quantum logic gates are the key elements in quantum computing. Here we investigate the possibility of achieving a scalable and compact quantum computing based on stationary electron-spin qubits, by using the giant optical circular birefringence induced by quantum-dot spins in double-sided optical microcavities as a result of cavity quantum electrodynamics. We design the compact quantum circuits for implementing universal and deterministic quantum gates for electron-spin systems, including the two-qubit CNOT gate and the three-qubit Toffoli gate. They are compact and economic, and they do not require additional electron-spin qubits. Moreover, our devices have good scalability and are attractive as they both are based on solid-state quantum systems and the qubits are stationary. They are feasible with the current experimental technology, and both high fidelity and high efficiency can be achieved when the ratio of the side leakage to the cavity decay is low.
Groeneveld, Bart G. H. M.; Najafi, Mehrdad; Steensma, Bauke; Adjokatse, Sampson; Fang, Hong-Hua; Jahani, Fatemeh; Qiu, Li; ten Brink, Gert H.; Hummelen, Jan C.; Loi, Maria Antonietta
We present efficient p-i-n type perovskite solar cells using NiOx as the hole transport layer and a fulleropyrrolidine with a triethylene glycol monoethyl ether side chain (PTEG-1) as electron transport layer. This electron transport layer leads to higher power conversion efficiencies compared to
Kim, Inho; Haverinen, Hanna M.; Li, Jian; Jabbour, Ghassan E.
2010-01-01
We demonstrate an enhancement in the power conversion efficiency (PCE) of p-i-n type organic solar cells consisting of zinc phthalocyanine (ZnPc) and fullerene (C60) using a p-layer of palladium phthalocyanine (PdPc). Solar cells employing three
Optimal control of universal quantum gates in a double quantum dot
Castelano, Leonardo K.; de Lima, Emanuel F.; Madureira, Justino R.; Degani, Marcos H.; Maialle, Marcelo Z.
2018-06-01
We theoretically investigate electron spin operations driven by applied electric fields in a semiconductor double quantum dot (DQD) formed in a nanowire with longitudinal potential modulated by local gating. We develop a model that describes the process of loading and unloading the DQD taking into account the overlap between the electron wave function and the leads. Such a model considers the spatial occupation and the spin Pauli blockade in a time-dependent fashion due to the highly mixed states driven by the external electric field. Moreover, we present a road map based on the quantum optimal control theory (QOCT) to find a specific electric field that performs two-qubit quantum gates on a faster timescale and with higher possible fidelity. By employing the QOCT, we demonstrate the possibility of performing within high efficiency a universal set of quantum gates {cnot, H, and T } , where cnot is the controlled-not gate, H is the Hadamard gate, and T is the π /8 gate, even in the presence of the loading/unloading process and charge noise effects. Furthermore, by varying the intensity of the applied magnetic field B , the optimized fidelity of the gates oscillates with a period inversely proportional to the gate operation time tf. This behavior can be useful to attain higher fidelity for fast gate operations (>1 GHz) by appropriately choosing B and tf to produce a maximum of the oscillation.
Sayer, Ryan; Maries, Alexandru; Singh, Chandralekha
2017-01-01
Learning quantum mechanics is challenging, even for upper-level undergraduate and graduate students. Research-validated interactive tutorials that build on students' prior knowledge can be useful tools to enhance student learning. We have been investigating student difficulties with quantum mechanics pertaining to the double-slit experiment in…
Quantum spin and charge pumping through double quantum dots with ferromagnetic leads
Energy Technology Data Exchange (ETDEWEB)
Pan, Hui, E-mail: hpan@buaa.edu.cn [Department of Physics, Beijing University of Aeronautics and Astronautics, Beijing 100191 (China); Key Laboratory of Micro-Nano Measurement-Manipulation and Physics (Ministry of Education), Beihang University, Beijing 100191 (China); Chen, Ziyu; Zhao, Sufen [Department of Physics, Beijing University of Aeronautics and Astronautics, Beijing 100191 (China); Lue, Rong [Department of Physics, Tsinghua University, Beijing 100084 (China)
2011-06-06
The pumping of electrons through double quantum dots (DQDs) attached to ferromagnetic leads have been theoretically investigated by using the nonequilibrium Green's function method. It is found that an oscillating electric field applied to the quantum dot may give rise to the pumped charge and spin currents. In the case that both leads are ferromagnet, a pure spin current can be generated in the antiparallel magnetization configuration, where no net charge current exists. The possibility of manipulating the pumped spin current is explored by tuning the dot level and the ac field. By making use of various tunings, the magnitude and direction of the pumped spin current can be well controlled. For the case that only one lead is ferromagnetic, both of the charge and spin currents can be pumped and flow in opposite directions on the average. The control of the magnitude and direction of the pumped charge and spin currents is also discussed by means of the magnetic flux threading through the DQD ring. -- Highlights: → We theoretically investigate the pumping of electrons through double quantum dots attached to ferromagnetic leads. → An oscillating electric field applied to the quantum dot may give rise to the pumped charge and spin currents. → When both leads are ferromagnet, a pure spin current can be generated in the antiparallel magnetization configuration. → By making use of various tunings, the magnitude and direction of the pumped spin current can be well controlled. → When only one lead is ferromagnetic, both of the charge and spin currents can be pumped and flow in opposite directions.
Transport studies in p-type double quantum well samples
International Nuclear Information System (INIS)
Hyndman, R.J.
2000-01-01
The motivation for the study of double quantum well samples is that the extra spatial degree of freedom can modify the ground state energies of the system, leading to new and interesting many body effects. Electron bi-layers have been widely studied but the work presented here is the first systematic study of transport properties of a p-type, double quantum well system. The samples, grown on the 311 plane, consisted of two 100A GaAs wells separated by a 30A AlAs barrier. The thin barrier in our structures, gives rise to very strong inter-layer Coulombic interactions but in contrast to electron double quantum well samples, tunnelling between the two wells is very weak. This is due to the large effective mass of holes compared with electrons. It is possible to accurately control the total density of a sample and the relative occupancy of each well using front and back gates. A systematic study of the magnetoresistance properties of the p-type bi-layers, was carried out at low temperatures and in high magnetic fields, for samples covering a range of densities. Considerable care was required to obtain reliable results as the samples were extremely susceptible to electrical shock and were prone to drift in density slowly over time. With balanced wells, the very low tunnelling in the p-type bi-layer leads to a complete absence of all odd integers in both resistance and thermopower except for the v=1 state, ( v 1/2 in each layer) where v is the total Landau level filling factor. Unlike other FQHE features the v=1 state strengthens with increased density as inter-layer interactions increase in strength over intra-layer interactions. The state is also destroyed at a critical temperature, which is much lower than the measured activation temperature. This is taken as evidence for a finite temperature phase transition predicted for the bi-layer v=1. From the experimental observations, we construct a phase diagram for the state, which agree closely with theoretical predictions
International Nuclear Information System (INIS)
Afsaneh, E.; Yavari, H.
2014-01-01
The superconducting reservoir effect on the current carrying transport of a double quantum dot in Markovian regime is investigated. For this purpose, a quantum master equation at finite temperature is derived for the many-body density matrix of an open quantum system. The dynamics and the steady-state properties of the double quantum dot system for arbitrary bias are studied. We will show that how the populations and coherencies of the system states are affected by superconducting leads. The energy parameter of system contains essentially four contributions due to dots system-electrodes coupling, intra dot coupling, two quantum dots inter coupling and superconducting gap. The coupling effect of each energy contribution is applied to currents and coherencies results. In addition, the effect of energy gap is studied by considering the amplitude and lifetime of coherencies to get more current through the system. (author)
Multiple-path Quantum Interference Effects in a Double-Aharonov-Bohm Interferometer
Directory of Open Access Journals (Sweden)
Yang XF
2010-01-01
Full Text Available Abstract We investigate quantum interference effects in a double-Aharonov-Bohm (AB interferometer consisting of five quantum dots sandwiched between two metallic electrodes in the case of symmetric dot-electrode couplings by the use of the Green’s function equation of motion method. The analytical expression for the linear conductance at zero temperature is derived to interpret numerical results. A three-peak structure in the linear conductance spectrum may evolve into a double-peak structure, and two Fano dips (zero conductance points may appear in the quantum system when the energy levels of quantum dots in arms are not aligned with one another. The AB oscillation for the magnetic flux threading the double-AB interferometer is also investigated in this paper. Our results show the period of AB oscillation can be converted from 2π to π by controlling the difference of the magnetic fluxes threading the two quantum rings.
Wang, Jun; Guo, Jin; Xie, Feng; Wang, Guosheng; Wu, Haoran; Song, Man; Yi, Yuanyuan
2016-10-01
This paper presents the comparative analysis of influence of doping level and doping profile of the active region on zero bias photoresponse characteristics of GaN-based p-i-n ultraviolet (UV) photodetectors operating at front- and back-illuminated. A two dimensional physically-based computer simulation of GaN-based p-i-n UV photodetectors is presented. We implemented GaN material properties and physical models taken from the literature. It is shown that absorption layer doping profile has notable impacts on the photoresponse of the device. Especially, the effect of doping concentration and distribution of the absorption layer on photoresponse is discussed in detail. In the case of front illumination, comparative to uniform n-type doping, the device with n-type Gaussian doping profiles at absorption layer has higher responsivity. Comparative to front illumination, back illuminated detector with p-type doping profiles at absorption layer has higher maximum photoresponse, while the Gaussian doping profiles have a weaker ability to enhance the device responsivity. It is demonstrated that electric field distribution, mobility degradation, and recombinations are jointly responsible for the variance of photoresponse. Our work enriches the understanding and utilization of GaN based p-i-n UV photodetectors.
Collective Behavior of a Spin-Aligned Gas of Interwell Excitons in Double Quantum Wells
DEFF Research Database (Denmark)
Larionov, A. V.; Bayer, M.; Hvam, Jørn Märcher
2005-01-01
The kinetics of a spin-aligned gas of interwell excitons in GaAs/AlGaAs double quantum wells (n–i–n heterostructure) is studied. The temperature dependence of the spin relaxation time for excitons, in which a photoexcited electron and hole are spatially separated between two adjacent quantum wells...
Directory of Open Access Journals (Sweden)
Pengqin Shi
2016-09-01
Full Text Available Based on the time-nonlocal particle number-resolved master equation, we investigate the sequential electron transport through the interacting double quantum dots. Our calculations show that there exists the effect of energy renormalization in the dispersion of the bath interaction spectrum and it is sensitive to the the bandwidth of the bath. This effect would strongly affect the stationary current and its zero-frequency shot noise for weak inter-dot coherent coupling strength, but for strong inter-dot coupling regime, it is negligible due to the strong intrinsic Rabi coherent dynamics. Moreover, the possible observable effects of the energy renormalization in the noise spectrum are also investigated through the Rabi coherence signal. Finally, the non-Markovian effect is manifested in the finite-frequency noise spectrum with the appearance of quasisteps, and the magnitude of these quasisteps are modified by the dispersion function.
Quantum double actions on operator algebras and orbifold quantum field theories
International Nuclear Information System (INIS)
Mueger, M.
1996-06-01
Starting from a local quantum field theory with an unbroken compact symmetry group G in 1+1 dimensional spacetime we construct disorder fields implementing gauge transformations on the fields (order variables) localized in a wedge region. Enlarging the local algebras by these disorder fields we obtain a nonlocal field theory, the fixpoint algebras of which under the appropriately extended action of the group G are shown to satisfy Haag duality in every simple sector. The specifically 1+1 dimensional phenomenon of violation of Haag duality of fixpoint nets is thereby clarified. In the case of a finite group G the extended theory is acted upon in a completely canonical way by the quantum double D(G) and satisfies R-matrix commutation relations as well as a Verlinde algebra. Furthermore, our methods are suitable for a concise and transparent approach to bosonization. The main technical ingredient is a strengthened version of the split property which should hold in all reasonable massive theories. In the appendices (part of) the results are extended to arbitary locally compact groups and our methods are adapted to chiral theories on the circle. (orig.)
Quantum Hall effect in InAs/AlSb double quantum well
International Nuclear Information System (INIS)
Yakunin, M.V.; Podgornykh, S.M.; Sadof'ev, Yu.G.
2009-01-01
Double quantum wells (DQWs) were first implemented in the InAs/AlSb heterosystem, which is characterized by a large Lande g factor |g|=15 of the InAs layers forming the well, much larger than the bulk g factor |g|=0.4 of the GaAs in conventional GaAs/AlGaAs DQWs. The quality of the samples is good enough to permit observation of a clear picture of the quantum Hall effect (QHE). Despite the small tunneling gap, which is due to the large barrier height (1.4 eV), features with odd filling factors ν=3,5,7, ... are present in the QHE, due to collectivized interlayer states of the DQW. When the field is rotated relative to the normal to the layers, the ν=3 state is suppressed, confirming the collectivized nature of that state and denying that it could owe its existence to a strong asymmetry of the DQW. Previously the destruction of the collectivized QHE states by a parallel field had been observed only for the ν=1 state. The observation of a similar effect for ν=3 in an InAs/AlSb DQW may be due to the large bulk g factor of InAs
Radial direct bandgap p-i-n GaNP microwire solar cells with enhanced short circuit current
Energy Technology Data Exchange (ETDEWEB)
Sukrittanon, Supanee [Graduate Program of Materials Science and Engineering, University of California, San Diego, La Jolla, California 92037 (United States); Liu, Ren; Pan, Janet L. [Department of Electrical and Computer Engineering, University of California, San Diego, La Jolla, California 92037 (United States); Breeden, Michael C. [Department of Nanoengineering, University of California, San Diego, La Jolla, California 92037 (United States); Jungjohann, K. L. [Center for Integrated Nanotechnologies, Sandia National Laboratories, Albuquerque, New Mexico 87185 (United States); Tu, Charles W., E-mail: ctu@ece.ucsd.edu, E-mail: sdayeh@ece.ucsd.edu; Dayeh, Shadi A., E-mail: ctu@ece.ucsd.edu, E-mail: sdayeh@ece.ucsd.edu [Graduate Program of Materials Science and Engineering, University of California, San Diego, La Jolla, California 92037 (United States); Department of Electrical and Computer Engineering, University of California, San Diego, La Jolla, California 92037 (United States)
2016-08-07
We report the demonstration of dilute nitride heterostructure core/shell microwire solar cells utilizing the combination of top-down reactive-ion etching to create the cores (GaP) and molecular beam epitaxy to create the shells (GaNP). Systematic studies of cell performance over a series of microwire lengths, array periods, and microwire sidewall morphologies examined by transmission electron microscopy were conducted to shed light on performance-limiting factors and to optimize the cell efficiency. We show by microscopy and correlated external quantum efficiency characterization that the open circuit voltage is degraded primarily due to the presence of defects at the GaP/GaNP interface and in the GaNP shells, and is not limited by surface recombination. Compared to thin film solar cells in the same growth run, the microwire solar cells exhibit greater short circuit current but poorer open circuit voltage due to greater light absorption and number of defects in the microwire structure, respectively. The comprehensive understanding presented in this work suggests that performance benefits of dilute nitride microwire solar cells can be achieved by further tuning of the epitaxial quality of the underlying materials.
Modeling of anisotropic properties of double quantum rings by the terahertz laser field.
Baghramyan, Henrikh M; Barseghyan, Manuk G; Kirakosyan, Albert A; Ojeda, Judith H; Bragard, Jean; Laroze, David
2018-04-18
The rendering of different shapes of just a single sample of a concentric double quantum ring is demonstrated realizable with a terahertz laser field, that in turn, allows the manipulation of electronic and optical properties of a sample. It is shown that by changing the intensity or frequency of laser field, one can come to a new set of degenerated levels in double quantum rings and switch the charge distribution between the rings. In addition, depending on the direction of an additional static electric field, the linear and quadratic quantum confined Stark effects are observed. The absorption spectrum shifts and the additive absorption coefficient variations affected by laser and electric fields are discussed. Finally, anisotropic electronic and optical properties of isotropic concentric double quantum rings are modeled with the help of terahertz laser field.
Hagar, Amit
Among the alternatives of non-relativistic quantum mechanics (NRQM) there are those that give different predictions than quantum mechanics in yet-untested circumstances, while remaining compatible with current empirical findings. In order to test these predictions, one must isolate one's system from environmental induced decoherence, which, on the standard view of NRQM, is the dynamical mechanism that is responsible for the 'apparent' collapse in open quantum systems. But while recent advances in condensed-matter physics may lead in the near future to experimental setups that will allow one to test the two hypotheses, namely genuine collapse vs. decoherence, hence make progress toward a solution to the quantum measurement problem, those philosophers and physicists who are advocating an information-theoretic approach to the foundations of quantum mechanics are still unwilling to acknowledge the empirical character of the issue at stake. Here I argue that in doing so they are displaying an unwarranted double standard.
Photon induced non-linear quantized double layer charging in quaternary semiconducting quantum dots.
Nair, Vishnu; Ananthoju, Balakrishna; Mohapatra, Jeotikanta; Aslam, M
2018-03-15
Room temperature quantized double layer charging was observed in 2 nm Cu 2 ZnSnS 4 (CZTS) quantum dots. In addition to this we observed a distinct non-linearity in the quantized double layer charging arising from UV light modulation of double layer. UV light irradiation resulted in a 26% increase in the integral capacitance at the semiconductor-dielectric (CZTS-oleylamine) interface of the quantum dot without any change in its core size suggesting that the cause be photocapacitive. The increasing charge separation at the semiconductor-dielectric interface due to highly stable and mobile photogenerated carriers cause larger electrostatic forces between the quantum dot and electrolyte leading to an enhanced double layer. This idea was supported by a decrease in the differential capacitance possible due to an enhanced double layer. Furthermore the UV illumination enhanced double layer gives us an AC excitation dependent differential double layer capacitance which confirms that the charging process is non-linear. This ultimately illustrates the utility of a colloidal quantum dot-electrolyte interface as a non-linear photocapacitor. Copyright © 2017 Elsevier Inc. All rights reserved.
Origin analysis of expanded stacking faults by applying forward current to 4H-SiC p-i-n diodes
Hayashi, Shohei; Naijo, Takanori; Yamashita, Tamotsu; Miyazato, Masaki; Ryo, Mina; Fujisawa, Hiroyuki; Miyajima, Masaaki; Senzaki, Junji; Kato, Tomohisa; Yonezawa, Yoshiyuki; Kojima, Kazutoshi; Okumura, Hajime
2017-08-01
Stacking faults expanded by the application of forward current to 4H-SiC p-i-n diodes were observed using a transmission electron microscope to investigate the expansion origin. It was experimentally confirmed that long-zonal-shaped stacking faults expanded from basal-plane dislocations converted into threading edge dislocations. In addition, stacking fault expansion clearly penetrated into the substrate to a greater depth than the dislocation conversion point. This downward expansion of stacking faults strongly depends on the degree of high-density minority carrier injection.
International Nuclear Information System (INIS)
Dinh Nhu Thao
2008-01-01
We have applied a self-consistent ensemble Monte Carlo simulation procedure using an extended valley model to consider the THz radiation from GaAs p-i-n diodes under high electric fields. The present calculation has shown an important improvement of the numerical results when using this model instead of the usual valley model. It has been shown the importance of the full band-structure in the simulation of processes in semiconductors, especially under the influence of high electric fields. (author)
DEFF Research Database (Denmark)
Da Ros, Francesco; Gajda, Andrzej; Liebig, Erik
2018-01-01
with an optical signal-to-noise ratio penalty below 0.7 dB. High-quality converted signals are generated thanks to the low polarization dependence (≤0.5 dB) and the high conversion efficiency (CE) achievable. The strong Kerr nonlinearity in silicon and the decrease of detrimental free-carrier absorption due......A polarization-diversity loop with a silicon waveguide with a lateral p-i-n diode as a nonlinear medium is used to realize polarization insensitive four-wave mixing. Wavelength conversion of seven dual-polarization 16-quadrature amplitude modulation (QAM) signals at 16 GBd is demonstrated...
States of an on-axis two-hydrogenic-impurity complex in concentric double quantum rings
International Nuclear Information System (INIS)
R-Fulla, M.; Marín, J.H.; Suaza, Y.A.; Duque, C.A.; Mora-Ramos, M.E.
2014-01-01
The energy structure of an on-axis two-donor system (D 2 0 ) confined in GaAs concentric double quantum rings under the presence of magnetic field and hydrostatic pressure was analyzed. Based on structural data for the double quantum ring morphology, a rigorous adiabatic procedure was implemented to separate the electrons' rapid in-plane motions from the slow rotational ones. A one-dimensional equation with an effective angular-dependent potential, which describes the two-electron rotations around the common symmetry axis of quantum rings was obtained. It was shown that D 2 0 complex characteristic features are strongly dependent on the quantum ring geometrical parameters. Besides, by changing the hydrostatic pressure and magnetic field strengths, it is possible to tune the D 2 0 energy structure. Our results are comparable to those previously reported for a single and negative ionized donor in a spherical quantum dot after a selective setting of the geometrical parameters of the structure. - Highlights: • We report the eigenenergies of a D 2 0 complex in concentric double quantum rings. • Our model is versatile enough to analyze the dissociation process D 2 0 →D 0 +D + +e − . • We compare the D 0 eigenenergies in horn toroidal and spherical shaped quantum dots. • We show the effects of hydrostatic pressure and magnetic field on the D 2 0 spectrum. • The use of hydrostatic pressure provides higher thermal stability to the D 2 0 complex
Fano effect and Andreev bound states in T-shape double quantum dots
International Nuclear Information System (INIS)
Calle, A.M.; Pacheco, M.; Orellana, P.A.
2013-01-01
In this Letter, we investigate the transport through a T-shaped double quantum dot coupled to two normal metal leads left and right and a superconducting lead. Analytical expressions of Andreev transmission and local density of states of the system at zero temperature have been obtained. We study the role of the superconducting lead in the quantum interferometric features of the double quantum dot. We report for first time the Fano effect produced by Andreev bound states in a side quantum dot. Our results show that as a consequence of quantum interference and proximity effect, the transmission from normal to normal lead exhibits Fano resonances due to Andreev bound states. We find that this interference effect allows us to study the Andreev bound states in the changes in the conductance between two normal leads. - Highlights: • Transport properties of a double quantum dot coupled in T-shape configuration to conducting and superconducting leads are studied. • We report Fano antiresonances in the normal transmission due to the Andreev reflections in the superconducting lead. • We report for first time the Fano effect produced by Andreev bound states in a side quantum dot. • Fano effect allows us to study the Andreev bound states in the changes in the conductance between two normal leads. • Andreev bound states survives even for strong dot-superconductor coupling
Hamilton, W. J.; Rhiger, D. R.; Sen, S.; Kalisher, M. H.; James, K.; Reid, C. P.; Gerrish, V.; Baccash, C. O.
1994-08-01
High-energy photon detectors have been constructed by engineering and fabricating p-i-n diode structures consisting of bulk CdZnTe and epitaxial HgCdTe. The p-i-n structure was obtained by liquid-phase epitaxial growth of p and n doped HgCdTe layers on 'intrinsic' CdZnTe material about 1mm thick and approximately 25mm square. Curve tracing shows I-V curves with diode characteristics having resistivity above 1011 Omega -cm and leakage current of less than 400 pA to about - 60V reverse bias on a typical test piece approximately 5 x 8 x 1 mm. Spectra of similar test pieces have been obtained at room temperature with various nuclear isotopic sources over the range of 22 keV to 662 keV which show exceptionally high energy resolution. Resolution as good as 1.82% FWHM was obtained for the 356 keV line of 133Ba with a P/V = 3.4. The performance of these detectors combined with contemporary infrared technology capable of fabricating 2D arrays of these II-VI materials opens up manifold exciting applications in astrophysics, medical, industrial, environmental, and defense spectroscopy and imaging.
The quantum Zeno effect in double well tunnelling
Lerner, L.
2018-05-01
Measurement lies at the heart of quantum theory, and introductory textbooks in quantum mechanics cover the measurement problem in topics such as the Schrödinger’s cat thought experiment, the EPR problem, and the quantum Zeno effect (QZE). In this article we present a new treatment of the QZE suitable for undergraduate students, for the case of a particle tunnelling between two wells while being observed in one of the wells. The analysis shows that as the observation rate increases, the tunnelling rate tends towards zero, in accordance with Zeno’s maxim ‘a watched pot never boils’. The method relies on decoherence theory, which replaces aspects of quantum collapse by the Schrödinger evolution of an open system, and its recently simplified treatment for undergraduates. Our presentation uses concepts familiar to undergraduate students, so that calculations involving many-body theory and the formal properties of the density matrix are avoided.
Quantum ratchet effect in a time non-uniform double-kicked model
Chen, Lei; Wang, Zhen-Yu; Hui, Wu; Chu, Cheng-Yu; Chai, Ji-Min; Xiao, Jin; Zhao, Yu; Ma, Jin-Xiang
2017-07-01
The quantum ratchet effect means that the directed transport emerges in a quantum system without a net force. The delta-kicked model is a quantum Hamiltonian model for the quantum ratchet effect. This paper investigates the quantum ratchet effect based on a time non-uniform double-kicked model, in which two flashing potentials alternately act on a particle with a homogeneous initial state of zero momentum, while the intervals between adjacent actions are not equal. The evolution equation of the state of the particle is derived from its Schrödinger equation, and the numerical method to solve the evolution equation is pointed out. The results show that quantum resonances can induce the ratchet effect in this time non-uniform double-kicked model under certain conditions; some quantum resonances, which cannot induce the ratchet effect in previous models, can induce the ratchet effect in this model, and the strengths of the ratchet effect in this model are stronger than those in previous models under certain conditions. These results enrich people’s understanding of the delta-kicked model, and provides a new optional scheme to control the quantum transport of cold atoms in experiment.
Relaxation of electron energy in the polar semiconductor double quantum dots
Czech Academy of Sciences Publication Activity Database
Král, Karel; Khás, Zdeněk; Zdeněk, Petr; Čerňanský, Marian; Lin, C. Y.
2002-01-01
Roč. 314, - (2002), s. 490-493 ISSN 0921-4526 R&D Projects: GA AV ČR IAA1010113; GA MŠk OC P5.20 Institutional research plan: CEZ:AV0Z1010914 Keywords : quantum dots * relaxation * double quantum dots * electron-photon interaction Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 0.609, year: 2002
International Nuclear Information System (INIS)
Javanainen, Juha
2010-01-01
We study theoretically an atomic Bose-Einstein condensate in a double-well trap, both quantum-mechanically and classically, under conditions such that in the classical model an unstable equilibrium dissolves into large-scale oscillations of the atoms between the potential wells. Quantum mechanics alone does not exhibit such nonlinear dynamics, but measurements of the atom numbers in the potential wells may nevertheless cause the condensate to behave essentially classically.
Manipulative Properties of Asymmetric Double Quantum Dots via Laser and Gate Voltage
International Nuclear Information System (INIS)
Shun-Cai, Zhao; Zheng-Dong, Liu
2009-01-01
We present a density matrix approach for the theoretical description of an asymmetric double quantum dot (QD) system. The results show that the properties of gain, absorption and dispersion of the double QD system, the population of the state with one hole in one dot and an electron in another dot transferred by tunneling can be manipulated by a laser pulse or gate voltage. Our scheme may demonstrate the possibility of electro-optical manipulation of quantum systems. (condensed matter: electronicstructure, electrical, magnetic, and opticalproperties)
Full counting statistics of level renormalization in electron transport through double quantum dots
International Nuclear Information System (INIS)
Luo Junyan; Shen Yu; Cen Gang; He Xiaoling; Wang Changrong; Jiao Hujun
2011-01-01
We examine the full counting statistics of electron transport through double quantum dots coupled in series, with particular attention being paid to the unique features originating from level renormalization. It is clearly illustrated that the energy renormalization gives rise to a dynamic charge blockade mechanism, which eventually results in super-Poissonian noise. Coupling of the double dots to an external heat bath leads to dephasing and relaxation mechanisms, which are demonstrated to suppress the noise in a unique way.
Charge Dynamics and Spin Blockade in a Hybrid Double Quantum Dot in Silicon
Directory of Open Access Journals (Sweden)
Matias Urdampilleta
2015-08-01
Full Text Available Electron spin qubits in silicon, whether in quantum dots or in donor atoms, have long been considered attractive qubits for the implementation of a quantum computer because of silicon’s “semiconductor vacuum” character and its compatibility with the microelectronics industry. While donor electron spins in silicon provide extremely long coherence times and access to the nuclear spin via the hyperfine interaction, quantum dots have the complementary advantages of fast electrical operations, tunability, and scalability. Here, we present an approach to a novel hybrid double quantum dot by coupling a donor to a lithographically patterned artificial atom. Using gate-based rf reflectometry, we probe the charge stability of this double quantum-dot system and the variation of quantum capacitance at the interdot charge transition. Using microwave spectroscopy, we find a tunnel coupling of 2.7 GHz and characterize the charge dynamics, which reveals a charge T_{2}^{*} of 200 ps and a relaxation time T_{1} of 100 ns. Additionally, we demonstrate a spin blockade at the inderdot transition, opening up the possibility to operate this coupled system as a singlet-triplet qubit or to transfer a coherent spin state between the quantum dot and the donor electron and nucleus.
On the relation between the modular double of Uq(sl(2,R)) and the quantum Teichmueller theory
International Nuclear Information System (INIS)
Nidaiev, Iurii; Teschner, Joerg
2013-02-01
We exhibit direct relations between the modular double of U q (sl(2,R)) and the quantum Teichmueller theory. Explicit representations for the fusion- and braiding operations of the quantum Teichmueller theory are immediate consequences. Our results include a simplified derivation of the Clebsch-Gordan decomposition for the principal series of representation of the modular double of U q (sl(2,R)).
Double-quantum homonuclear correlations of spin I=5/2 nuclei.
Iuga, Dinu
2011-02-01
The challenges associated with acquiring double-quantum homonuclear Nuclear Magnetic Resonance correlation spectra of half-integer quadrupolar nuclei are described. In these experiments the radio-frequency irradiation amplitude is necessarily weak in order to selectively excite the central transition. In this limit only one out of the 25 double-quantum coherences possible for two coupled spin I=5/2 nuclei is excited. An investigation of all the 25 two spins double quantum transitions reveals interesting effects such as a compensation of the first-order quadrupolar interaction between the two single quantum transitions involved in the double quantum coherence. In this paper a full numerical study of a hypothetical two spin I=5/2 system is used to show what happens when the RF amplitude during recoupling is increased. In principle this is advantageous, since the required double quantum coherence should build up faster, but in practice it also induces adiabatic passage transfer of population and coherence which impedes any build up. Finally an optimized rotary resonance recoupling (oR(3)) sequence is introduced in order to decrease these transfers. This sequence consists of a spin locking irradiation whose amplitude is reduced four times during one rotor period, and allows higher RF powers to be used during recoupling. The sequence is used to measure (27)Al DQ dipolar correlation spectra of Y(3)Al(5)O(12) (YAG) and gamma alumina (γAl(2)O(3)). The results prove that aluminium vacancies in gamma alumina mainly occur in the tetrahedral sites. Copyright © 2010 Elsevier Inc. All rights reserved.
International Nuclear Information System (INIS)
Schneider, U.; Schroder, B.
1990-01-01
The results of keV-electron degradation and annealing experiments obtained on a-Si:H based p-i-n solar cells are interpretated under inclusion of models developed earlier for the degradation of a-Si:H films and are placed in the framework of an extended collection length model. The strong degradation of the cell parameters j sc and FF due to considerable keV-electron irradiation can be explained quantitatively. This enables a crucial test of the validity of the mathematical models for the keV-electron induced effects developed so far. Furthermore the results of a detailed investigation of the thermal recovery of electron-degraded solar cells can be cleared up consistently. Some unresolved issues are discussed, and experiments to resolve these questions are proposed
Kim, Inho
2010-11-15
We demonstrate an enhancement in the power conversion efficiency (PCE) of p-i-n type organic solar cells consisting of zinc phthalocyanine (ZnPc) and fullerene (C60) using a p-layer of palladium phthalocyanine (PdPc). Solar cells employing three different device structures such as ZnPc/ZnPc:C60/C60, PdPc/PdPc:C60/C60, and PdPc/ZnPc:C60/C60 with varying thickness of mixed interlayers were fabricated by thermal evaporation. The mixed i-layers were deposited by co-evaporation of MPc (M=Zn,Pd) and C60 by 1:1 ratio. PCE of 3.7% was obtained for optimized cells consisting of PdPc/ZnPc:C60/C60, while cells with device structure of ZnPc/ZnPc:C60/C60 showed PCE of 3.2%.
Groeneveld, Bart G. H. M.; Najafi, Mehrdad; Steensma, Bauke; Adjokatse, Sampson; Fang, Hong-Hua; Jahani, Fatemeh; Qiu, Li; ten Brink, Gert H.; Hummelen, Jan C.; Loi, Maria Antonietta
2017-07-01
We present efficient p-i-n type perovskite solar cells using NiOx as the hole transport layer and a fulleropyrrolidine with a triethylene glycol monoethyl ether side chain (PTEG-1) as electron transport layer. This electron transport layer leads to higher power conversion efficiencies compared to perovskite solar cells with PCBM (phenyl-C61-butyric acid methyl ester). The improved performance of PTEG-1 devices is attributed to the reduced trap-assisted recombination and improved charge extraction in these solar cells, as determined by light intensity dependence and photoluminescence measurements. Through optimization of the hole and electron transport layers, the power conversion efficiency of the NiOx/perovskite/PTEG-1 solar cells was increased up to 16.1%.
Gu, Zhichen; Inoue, Daisuke; Amemiya, Tomohiro; Nishiyama, Nobuhiko; Arai, Shigehisa
2018-02-01
A GaInAs/InP waveguide-type p-i-n membrane photodetector is shown to be a strong candidate for on-chip optical interconnection. A responsivity of 0.95 A/W is estimated for a device length of 30 µm. The 3 dB cutoff frequency is measured to be 13.3 GHz at a reverse bias of 3 V, which is in good agreement with the observed clear eye opening pattern up to 20 Gbps for a non-return-to-zero signal. Moreover, a bit error rate of less than 1 × 10-9 is obtained at data rates of 20 and 10 Gbps with input powers of -10 and -13 dBm, respectively.
International Nuclear Information System (INIS)
Kasapoglu, E.; Sari, H.; Sokmen, I.
2005-01-01
The combined electric field and hydrostatic pressure effects on the binding energy of the donor impurity in double triangle quantum well (DTQW), double graded (DGQW) and double square (DSQW) GaAs-(Ga,Al)As quantum wells are calculated by using a variational technique within the effective-mass approximation. The results have been obtained in the presence of an electric field applied along the growth direction as a function of hydrostatic pressure, the impurity position, barrier width and the geometric shape of the double quantum wells
Sayer, Ryan; Maries, Alexandru; Singh, Chandralekha
2017-06-01
Learning quantum mechanics is challenging, even for upper-level undergraduate and graduate students. Research-validated interactive tutorials that build on students' prior knowledge can be useful tools to enhance student learning. We have been investigating student difficulties with quantum mechanics pertaining to the double-slit experiment in various situations that appear to be counterintuitive and contradict classical notions of particles and waves. For example, if we send single electrons through the slits, they may behave as a "wave" in part of the experiment and as a "particle" in another part of the same experiment. Here we discuss the development and evaluation of a research-validated Quantum Interactive Learning Tutorial (QuILT) which makes use of an interactive simulation to improve student understanding of the double-slit experiment and strives to help students develop a good grasp of foundational issues in quantum mechanics. We discuss common student difficulties identified during the development and evaluation of the QuILT and analyze the data from the pretest and post test administered to the upper-level undergraduate and first-year physics graduate students before and after they worked on the QuILT to assess its effectiveness. These data suggest that on average, the QuILT was effective in helping students develop a more robust understanding of foundational concepts in quantum mechanics that defy classical intuition using the context of the double-slit experiment. Moreover, upper-level undergraduates outperformed physics graduate students on the post test. One possible reason for this difference in performance may be the level of student engagement with the QuILT due to the grade incentive. In the undergraduate course, the post test was graded for correctness while in the graduate course, it was only graded for completeness.
Directory of Open Access Journals (Sweden)
Ryan Sayer
2017-05-01
Full Text Available Learning quantum mechanics is challenging, even for upper-level undergraduate and graduate students. Research-validated interactive tutorials that build on students’ prior knowledge can be useful tools to enhance student learning. We have been investigating student difficulties with quantum mechanics pertaining to the double-slit experiment in various situations that appear to be counterintuitive and contradict classical notions of particles and waves. For example, if we send single electrons through the slits, they may behave as a “wave” in part of the experiment and as a “particle” in another part of the same experiment. Here we discuss the development and evaluation of a research-validated Quantum Interactive Learning Tutorial (QuILT which makes use of an interactive simulation to improve student understanding of the double-slit experiment and strives to help students develop a good grasp of foundational issues in quantum mechanics. We discuss common student difficulties identified during the development and evaluation of the QuILT and analyze the data from the pretest and post test administered to the upper-level undergraduate and first-year physics graduate students before and after they worked on the QuILT to assess its effectiveness. These data suggest that on average, the QuILT was effective in helping students develop a more robust understanding of foundational concepts in quantum mechanics that defy classical intuition using the context of the double-slit experiment. Moreover, upper-level undergraduates outperformed physics graduate students on the post test. One possible reason for this difference in performance may be the level of student engagement with the QuILT due to the grade incentive. In the undergraduate course, the post test was graded for correctness while in the graduate course, it was only graded for completeness.
Collective Behavior of Interwell Excitons in GaAs/AlGaAs Double Quantum Wells
DEFF Research Database (Denmark)
Larionov, A. V.; Timofeev, V. B.; Hvam, Jørn Märcher
2000-01-01
Photoluminescence spectra of interwell excitons in double GaAs/AlGaAs quantum wells (n-i-n structures) have been investigated (an interwell excition in these systems is an electron-hole pair spatially separated by a narrow AlAs barrier). Under resonance excitation by circular polarized light...
Fourier transform and the Verlinde formula for the quantum double of a finite group
Koornwinder, T.H.; Schroers, B.J.; Slingerland, J.K.; Bais, F.A.
1999-01-01
We define a Fourier transform $S$ for the quantum double $D(G)$ of a finite group $G$. Acting on characters of $D(G)$, $S$ and the central ribbon element of $D(G)$ generate a unitary matrix representation of the group $SL(2,Z)$. The characters form a ring over the integers under both the algebra
Symmetric Double Quantum Dot Energy States in a High Magnetic Field
International Nuclear Information System (INIS)
Morgenstern Horing, Norman J; Sawamura, Makoto
2011-01-01
The dynamical Green's function and energy spectrum of a 2D symmetric quantum double-dot system on a planar host in a normal magnetic field are analyzed here, representing the two dots by Dirac delta function potentials. The proliferation of energy levels due to Landau quantization is examined in detail.
Correlation Effects on the Coupled Plasmon Modes of a Double Quantum Well
DEFF Research Database (Denmark)
Hill, N. P. R.; Nicholls, J. T.; Linfield, E. H.
1997-01-01
At temperatures comparable to the Fermi temperature, we have measured a plasmon enhanced Coulomb drag in a GaAs/AlGaAs double quantum well electron system. This measurement provides a probe of the many-body corrections to the coupled plasmon modes, and we present a detailed comparison between exp...
Twisting products in Hopf algebras and the construction of the quantum double
International Nuclear Information System (INIS)
Ferrer Santos, W.R.
1992-04-01
Let H be a finite dimensional Hopf algebra and B an (H, H*)-comodule algebra. The purpose of this note is to present a construction in which the product of B is twisted by the given actions. The constructions of the smash product and of the Quantum Double appear as special cases. (author). 7 refs
A Ge/Si heterostructure nanowire-based double quantum dot with integrated charge sensor
DEFF Research Database (Denmark)
Hu, Yongjie; Churchill, Hugh; Reilly, David
2007-01-01
Coupled electron spins in semiconductor double quantum dots hold promise as the basis for solid-state qubits. To date, most experiments have used III-V materials, in which coherence is limited by hyperfine interactions. Ge/Si heterostructure nanowires seem ideally suited to overcome this limitati...
Interpretation of quantum mechanics by the double solution theory
International Nuclear Information System (INIS)
Broglie, L. de.
1987-01-01
English translation of one of Louis de Broglie's latest articles, as a kind of gift to all physicists abroad who are not well acquainted with the double solution theory, or do not read French. Our readers will appreciate the deep physical insight expressed in this tentative theory of wave-particle dualism, a major problem unsolved to everyone's satisfaction
Double Exponential Relativity Theory Coupled Theoretically with Quantum Theory?
International Nuclear Information System (INIS)
Montero Garcia, Jose de la Luz; Novoa Blanco, Jesus Francisco
2007-01-01
Here the problem of special relativity is analyzed into the context of a new theoretical formulation: the Double Exponential Theory of Special Relativity with respect to which the current Special or Restricted Theory of Relativity (STR) turns to be a particular case only
Double-slit experiment with single wave-driven particles and its relation to quantum mechanics
DEFF Research Database (Denmark)
Andersen, Anders Peter; Madsen, Jacob; Reichelt, Christian Günther
2015-01-01
even though it is possible to determine unambiguously which slit the walking droplet passes. Here we argue, however, that the single-particle statistics in such an experiment will be fundamentally different from the single-particle statistics of quantum mechanics. Quantum mechanical interference takes...... place between different classical paths with precise amplitude and phase relations. In the double-slit experiment with walking droplets, these relations are lost since one of the paths is singled out by the droplet. To support our conclusions, we have carried out our own double-slit experiment, and our...... results, in particular the long and variable slit passage times of the droplets, cast strong doubt on the feasibility of the interference claimed by Couder and Fort. To understand theoretically the limitations of wave-driven particle systems as analogs to quantum mechanics, we introduce a Schro...
Magnetic Anticrossing of 1D Subbands in Coupled Ballistic Double Quantum Wires
International Nuclear Information System (INIS)
Blount, Mark A.; Moon, Jeong-Sun; Simmons, Jerry A.; Lyo, Sungkwun K.; Wendt, Joel R.; Reno, John L.
2000-01-01
We study the low-temperature in-plane magnetoconductance of vertically coupled double quantum wires. Using a novel flip-chip technique, the wires are defined by two pairs of mutually aligned split gates on opposite sides of a s 1 micron thick AlGaAs/GaAs double quantum well heterostructure. We observe quantized conductance steps due to each quantum well and demonstrate independent control of each ID wire. A broad dip in the magnetoconductance at -6 T is observed when a magnetic field is applied perpendicular to both the current and growth directions. This conductance dip is observed only when 1D subbands are populated in both the top and bottom constrictions. This data is consistent with a counting model whereby the number of subbands crossing the Fermi level changes with field due to the formation of an anticrossing in each pair of 1D subbands
Tunneling conductance in superconductor-hybrid double quantum dots Josephson junction
Chamoli, Tanuj; Ajay
2018-05-01
The present work deals with the theoretical model study to analyse the tunneling conductance across a superconductor hybrid double quantum dots tunnel junction (S-DQD-S). Recently, there are many experimental works where the Josephson current across such nanoscopic junction is found to be dependent on nature of the superconducting electrodes, coupling of the hybrid double quantum dot's electronic states with the electronic states of the superconductors and nature of electronic structure of the coupled dots. For this, we have attempted a theoretical model containing contributions of BCS superconducting leads, magnetic coupled quantum dot states and coupling of superconducting leads with QDs. In order to include magnetic coupled QDs the contributions of competitive Kondo and Ruderman-Kittel- Kasuya-Yosida (RKKY) interaction terms are also introduced through many body effects in the model Hamiltonian at low temperatures (where Kondo temperature TK tunnel junctions. Tunneling conductance is proportional to DOS, hence we can analyse it's behaviour with the help of DOS.
International Nuclear Information System (INIS)
Zhao, Dongxing; Wu, Jiarui; Gu, Ying; Gong, Qihuang
2014-01-01
We propose tailoring of the double Fano profiles via plasmon-assisted quantum interference in a hybrid exciton-plasmon system. Tailoring is performed by the interference between two exciton channels interacting with a common localized surface plasmon. Using an applied field of low intensity, the absorption spectrum of the hybrid system reveals a double Fano lineshape with four peaks. For relatively large field intensity, a broad flat window in the absorption spectrum appears which results from the destructive interference between excitons. Because of strong constructive interference, this window vanishes as intensity is further increased. We have designed a nanometer bandpass optical filter for visible light based on tailoring of the optical spectrum. This study provides a platform for quantum interference that may have potential applications in ultracompact tunable quantum devices.
Controlled release of stored pulses in a double-quantum-well structure
International Nuclear Information System (INIS)
Carreno, F; Anton, M A
2009-01-01
We show that an asymmetric double-quantum-well structure can operate as an optical memory. The double quantum wells are modelled like an atomic ensemble of four-level atoms in the Λ-V-type configuration with vacuum-induced coherence arising from resonant tunnelling through the ultra-thin potential energy barrier between the wells. A weak quantum field connects the ground level with the two upper levels and an auxiliary classical control field connects the intermediate level with the upper levels. The quantum field can be mapped into two channels. One channel results from the adiabatic change of the control field which maps the incoming quantum field into the coherence of the two lower levels like in a Λ-type atomic ensemble. The other channel results from the mapping of the quantum field into a combination of coherences between the two upper levels and the ground level, and it is allowed by the adiabatic change of the upper level splitting via an external voltage. The possibility of releasing multiple pulses from the medium resulting from the existence of a non-evolving component of the two-channel memory is shown. A physical picture has been developed providing an explanation of the performance of the device.
Double-slit experiment with single wave-driven particles and its relation to quantum mechanics.
Andersen, Anders; Madsen, Jacob; Reichelt, Christian; Rosenlund Ahl, Sonja; Lautrup, Benny; Ellegaard, Clive; Levinsen, Mogens T; Bohr, Tomas
2015-07-01
In a thought-provoking paper, Couder and Fort [Phys. Rev. Lett. 97, 154101 (2006)] describe a version of the famous double-slit experiment performed with droplets bouncing on a vertically vibrated fluid surface. In the experiment, an interference pattern in the single-particle statistics is found even though it is possible to determine unambiguously which slit the walking droplet passes. Here we argue, however, that the single-particle statistics in such an experiment will be fundamentally different from the single-particle statistics of quantum mechanics. Quantum mechanical interference takes place between different classical paths with precise amplitude and phase relations. In the double-slit experiment with walking droplets, these relations are lost since one of the paths is singled out by the droplet. To support our conclusions, we have carried out our own double-slit experiment, and our results, in particular the long and variable slit passage times of the droplets, cast strong doubt on the feasibility of the interference claimed by Couder and Fort. To understand theoretically the limitations of wave-driven particle systems as analogs to quantum mechanics, we introduce a Schrödinger equation with a source term originating from a localized particle that generates a wave while being simultaneously guided by it. We show that the ensuing particle-wave dynamics can capture some characteristics of quantum mechanics such as orbital quantization. However, the particle-wave dynamics can not reproduce quantum mechanics in general, and we show that the single-particle statistics for our model in a double-slit experiment with an additional splitter plate differs qualitatively from that of quantum mechanics.
Double-slit experiment with single wave-driven particles and its relation to quantum mechanics
Andersen, Anders; Madsen, Jacob; Reichelt, Christian; Rosenlund Ahl, Sonja; Lautrup, Benny; Ellegaard, Clive; Levinsen, Mogens T.; Bohr, Tomas
2015-07-01
In a thought-provoking paper, Couder and Fort [Phys. Rev. Lett. 97, 154101 (2006), 10.1103/PhysRevLett.97.154101] describe a version of the famous double-slit experiment performed with droplets bouncing on a vertically vibrated fluid surface. In the experiment, an interference pattern in the single-particle statistics is found even though it is possible to determine unambiguously which slit the walking droplet passes. Here we argue, however, that the single-particle statistics in such an experiment will be fundamentally different from the single-particle statistics of quantum mechanics. Quantum mechanical interference takes place between different classical paths with precise amplitude and phase relations. In the double-slit experiment with walking droplets, these relations are lost since one of the paths is singled out by the droplet. To support our conclusions, we have carried out our own double-slit experiment, and our results, in particular the long and variable slit passage times of the droplets, cast strong doubt on the feasibility of the interference claimed by Couder and Fort. To understand theoretically the limitations of wave-driven particle systems as analogs to quantum mechanics, we introduce a Schrödinger equation with a source term originating from a localized particle that generates a wave while being simultaneously guided by it. We show that the ensuing particle-wave dynamics can capture some characteristics of quantum mechanics such as orbital quantization. However, the particle-wave dynamics can not reproduce quantum mechanics in general, and we show that the single-particle statistics for our model in a double-slit experiment with an additional splitter plate differs qualitatively from that of quantum mechanics.
States of an on-axis two-hydrogenic-impurity complex in concentric double quantum rings
Energy Technology Data Exchange (ETDEWEB)
R-Fulla, M., E-mail: marlonfulla@yahoo.com [Escuela de Física, Universidad Nacional de Colombia, A.A. 3840, Medellín (Colombia); Institución Universitaria Pascual Bravo, A.A. 6564, Medellín (Colombia); Marín, J.H.; Suaza, Y.A. [Escuela de Física, Universidad Nacional de Colombia, A.A. 3840, Medellín (Colombia); Duque, C.A. [Grupo de Materia Condensada-U de A, Instituto de Física, Facultad de Ciencias Exactas y Naturales, Universidad de Antioquia, calle 70 No. 52-21, Medellín (Colombia); Mora-Ramos, M.E. [Facultad de Ciencias, Universidad Autónoma del Estado de Morelos, Av. Universidad 1001, CP 62209, Cuernavaca, Morelos (Mexico)
2014-06-13
The energy structure of an on-axis two-donor system (D{sub 2}{sup 0}) confined in GaAs concentric double quantum rings under the presence of magnetic field and hydrostatic pressure was analyzed. Based on structural data for the double quantum ring morphology, a rigorous adiabatic procedure was implemented to separate the electrons' rapid in-plane motions from the slow rotational ones. A one-dimensional equation with an effective angular-dependent potential, which describes the two-electron rotations around the common symmetry axis of quantum rings was obtained. It was shown that D{sub 2}{sup 0} complex characteristic features are strongly dependent on the quantum ring geometrical parameters. Besides, by changing the hydrostatic pressure and magnetic field strengths, it is possible to tune the D{sub 2}{sup 0} energy structure. Our results are comparable to those previously reported for a single and negative ionized donor in a spherical quantum dot after a selective setting of the geometrical parameters of the structure. - Highlights: • We report the eigenenergies of a D{sub 2}{sup 0} complex in concentric double quantum rings. • Our model is versatile enough to analyze the dissociation process D{sub 2}{sup 0}→D{sup 0}+D{sup +}+e{sup −}. • We compare the D{sup 0} eigenenergies in horn toroidal and spherical shaped quantum dots. • We show the effects of hydrostatic pressure and magnetic field on the D{sub 2}{sup 0} spectrum. • The use of hydrostatic pressure provides higher thermal stability to the D{sub 2}{sup 0} complex.
Double-beta decay processes from lattice quantum chromodynamics
Davoudi, Zohreh; Tiburzi, Brian; Wagman, Michael; Winter, Frank; Chang, Emmanuel; Detmold, William; Orginos, Kostas; Savage, Martin; Shanahan, Phiala; Nplqcd Collaboration
2017-09-01
While an observation of neutrinoless double-beta decay in upcoming experiments will establish that the neutrinos are Majorana particles, the underlying new physics responsible for this decay can only be constrained if the theoretical predictions of the rate are substantially refined. This talk demonstrates the roadmap in connecting the underlying high-scale theory to the corresponding nuclear matrix elements, focusing mainly on the nucleonic matrix elements in the simplest extension of Standard Model in which a light Majorana neutrino is mediating the process. The role of lattice QCD and effective field theory in this program, in particular, the prospect of a direct matching of the nn to pp amplitude to lattice QCD will be discussed. As a first step towards this goal, the results of the first lattice QCD calculation of the relevant matrix element for neutrinofull double-beta decay will be presented, albeit with unphysical quark masses, along with important lessons that could impact the calculations of nuclear matrix elements involved in double-beta decays of realistic nuclei.
Cavity-photon-switched coherent transient transport in a double quantum waveguide
Energy Technology Data Exchange (ETDEWEB)
Abdullah, Nzar Rauf, E-mail: nra1@hi.is; Gudmundsson, Vidar, E-mail: vidar@raunvis.hi.is [Science Institute, University of Iceland, Dunhaga 3, IS-107 Reykjavik (Iceland); Tang, Chi-Shung [Department of Mechanical Engineering, National United University, 1, Lienda, 36003 Miaoli, Taiwan (China); Manolescu, Andrei [School of Science and Engineering, Reykjavik University, Menntavegur 1, IS-101 Reykjavik (Iceland)
2014-12-21
We study a cavity-photon-switched coherent electron transport in a symmetric double quantum waveguide. The waveguide system is weakly connected to two electron reservoirs, but strongly coupled to a single quantized photon cavity mode. A coupling window is placed between the waveguides to allow electron interference or inter-waveguide transport. The transient electron transport in the system is investigated using a quantum master equation. We present a cavity-photon tunable semiconductor quantum waveguide implementation of an inverter quantum gate, in which the output of the waveguide system may be selected via the selection of an appropriate photon number or “photon frequency” of the cavity. In addition, the importance of the photon polarization in the cavity, that is, either parallel or perpendicular to the direction of electron propagation in the waveguide system is demonstrated.
Observation of conductance doubling in an Andreev quantum point contact
Kjaergaard, M.; Nichele, F.; Suominen, H.; Nowak, M.; Wimmer, M.; Akhmerov, A.; Folk, J.; Flensberg, K.; Shabani, J.; Palmstrom, C.; Marcus, C.
One route to study the non-Abelian nature of excitations in topological superconductors is to realise gateable two dimensional (2D) semiconducting systems, with spin-orbit coupling in proximity to an s-wave superconductor. Previous work on coupling 2D electron gases (2DEG) with superconductors has been hindered by a non-ideal interface and unstable gateability. We report measurements on a gateable 2DEG coupled to superconductors through a pristine interface, and use aluminum grown in situ epitaxially on an InGaAs/InAs electron gas. We demonstrate quantization in units of 4e2 / h in a quantum point contact (QPC) in such hybrid systems. Operating the QPC as a tunnel probe, we observe a hard superconducting gap, overcoming the soft-gap problem in 2D superconductor/semiconductor systems. Our work paves way for a new and highly scalable system in which to pursue topological quantum information processing. Research supported by Microsoft Project Q and the Danish National Research Foundation.
Anisotropic Pauli Spin Blockade of Holes in a GaAs Double Quantum Dot
Wang, Qingwen; Klochan, Oleh; Hung, Jo-Tzu; Culcer, Dimitrie; Farrer, Ian; Ritchie, David; Hamilton, Alex
Electrically defined semiconductor quantum dots are appealing systems for spin manipulation and quantum information processing. Thanks to the weak hyperfine interaction and the strong spin-orbit interaction, heavy-holes in GaAs are promising candidates for all-electrical spin manipulation. However, making stable quantum dots in GaAs has only become possible recently, mainly because of difficulties in device fabrication and device stability. Here we present electrical transport measurements of heavy-holes in a lateral double quantum dot based on a GaAs /AlxGa1 - x As heterostructure. We observe clear Pauli spin blockade and show that the lifting of the spin blockade by an external magnetic field is extremely anisotropic. Numerical calculations of heavy-hole transport through a double quantum dot in the presence of strong spin-orbit interaction demonstrate quantitative agreement with experimental results, which indicates that the observed anisotropy can be explained by the anisotropic hole g-factor and the surface Dresselhaus spin-orbit coupling.
Effect of resonant tunneling on electroluminescence in nc-Si/SiO2 multilayers-based p-i-n structure
International Nuclear Information System (INIS)
Chen, D.Y.; Wang, Y.Y.; Sun, Y.; He, Y.J.; Zhang, G.
2015-01-01
P-i-n structures with SiO 2 /nc-Si/SiO 2 multilayers as intrinsic layer were prepared in conventional plasma enhanced chemical vapor deposition system. Their carrier transport and electroluminescence properties were investigated. Two resonant tunneling related current peaks with current dropping gradually under forward bias were observed in the current voltage curve. Non-uniformity of the interfaces might be responsible for the gradual dropping of the current. Electroluminescence intensity of the device under bias of 7 V which is near the resonant tunneling peak voltage of 7.2 V was weaker than that under 6.5 V. According to the Gaussian fitting results of the spectra, the intensity of the sub-peak of 650 nm originating from recombination of injected electrons and holes was decreased the most. When resonant tunneling conditions are met, it might be that most of the injected electrons participate in resonant tunneling and fewer in Pool–Frenkel tunneling, which is the main carrier transport mechanism, to contribute to electroluminescence intensity. - Highlights: • Two resonant tunneling peaks with current dropping gradually were observed. • The EL intensity of the structure under resonant tunneling peak voltage is weakened. • P–F tunneling is the main transport mechanism besides resonant tunneling
CdS-based p-i-n diodes using indium and copper doped CdS films by pulsed laser deposition
International Nuclear Information System (INIS)
Hernandez-Como, N; Berrellez-Reyes, F; Mizquez-Corona, R; Ramirez-Esquivel, O; Mejia, I; Quevedo-Lopez, M
2015-01-01
In this work we report a method to dope cadmium sulfide (CdS) thin films using pulsed laser deposition. Doping is achieved during film growth at substrate temperatures of 100 °C by sequential deposition of the CdS and the dopant material. Indium sulfide and copper disulfide targets were used as the dopant sources for n-type and p-type doping, respectively. Film resistivities as low as 0.2 and 1 Ω cm were achieved for indium and copper doped films, respectively. Hall effect measurements demonstrated the change in conductivity type from n-type to p-type when the copper dopants are incorporated into the film. The controlled incorporation of indium or copper, in the undoped CdS film, results in substitutional defects in the CdS, which increases the electron and hole concentration up to 4 × 10 18 cm −3 and 3 × 10 20 cm −3 , respectively. The results observed with CdS doping can be expanded to other chalcogenides material compounds by just selecting different targets. With the optimized doped films, CdS-based p-i-n diodes were fabricated yielding an ideality factor of 4, a saturation current density of 2 × 10 −6 A cm −2 and a rectification ratio of three orders of magnitude at ±3 V. (paper)
Sn-based Ge/Ge{sub 0.975}Sn{sub 0.025}/Ge p-i-n photodetector operated with back-side illumination
Energy Technology Data Exchange (ETDEWEB)
Chang, C.; Li, H.; Huang, S. H.; Cheng, H. H., E-mail: hhcheng@ntu.edu.tw [Center for Condensed Matter Sciences and Graduate Institute of Electronics Engineering, National Taiwan University, Taipei 106, Taiwan (China); Sun, G.; Soref, R. A. [Department of Engineering, University of Massachusetts Boston, Boston, Massachusetts 02125 (United States)
2016-04-11
We report an investigation of a GeSn-based p-i-n photodetector grown on a Ge wafer that collects light signal from the back of the wafer. Temperature dependent absorption measurements performed over a wide temperature range (300 K down to 25 K) show that (a) absorption starts at the indirect bandgap of the active GeSn layer and continues up to the direct bandgap of the Ge wafer, and (b) the peak responsivity increases rapidly at first with decreasing temperature, then increases more slowly, followed by a decrease at the lower temperatures. The maximum responsivity happens at 125 K, which can easily be achieved with the use of liquid nitrogen. The temperature dependence of the photocurrent is analyzed by taking into consideration of the temperature dependence of the electron and hole mobility in the active layer, and the analysis result is in reasonable agreement with the data in the temperature regime where the rapid increase occurs. This investigation demonstrates the feasibility of a GeSn-based photodiode that can be operated with back-side illumination for applications in image sensing systems.
Generic mechanisms of decoherence of quantum oscillations in magnetic double-well systems
International Nuclear Information System (INIS)
Chudnovsky, Eugene M.
2004-01-01
Fundamental conservation laws mandate parameter-free generic mechanisms of decoherence of quantum oscillations in double-well systems. We consider two examples: tunneling of the magnetic moment in nanomagnets and tunneling between macroscopic current states in SQUIDs. In both cases the decoherence occurs via emission of phonons and photons at the oscillation frequency. We also show that in a system of identical qubits the decoherence greatly increases due to the superradiance of electromagnetic and sound waves. Our findings have important implications for building elements of quantum computers based upon nanomagnets and SQUIDs
Generic mechanisms of decoherence of quantum oscillations in magnetic double-well systems
Energy Technology Data Exchange (ETDEWEB)
Chudnovsky, Eugene M. E-mail: chudnov@lehman.cuny.edu
2004-05-01
Fundamental conservation laws mandate parameter-free generic mechanisms of decoherence of quantum oscillations in double-well systems. We consider two examples: tunneling of the magnetic moment in nanomagnets and tunneling between macroscopic current states in SQUIDs. In both cases the decoherence occurs via emission of phonons and photons at the oscillation frequency. We also show that in a system of identical qubits the decoherence greatly increases due to the superradiance of electromagnetic and sound waves. Our findings have important implications for building elements of quantum computers based upon nanomagnets and SQUIDs.
Subband structure comparison between n- and p- type double delta-doped Ga As quantum wells
International Nuclear Information System (INIS)
Rodriguez V, I.; Gaggero S, L.M.
2004-01-01
We compute the electron level structure (n-type) and the hole subband structure (p-type) of double -doped GaAs (DDD) quantum wells, considering exchange effects. The Thomas-Fermi (TF), and Thomas-Fermi-Dirac (TFD) approximations have been applied in order to describe the bending of the conduction and valence band, respectively. The electron and the hole subband structure study indicates that exchange effects are more important in p-type DDD quantum wells than in n-type DDD Also our results agree with the experimental data available. (Author) 33 refs., 2 tabs., 5 figs
Majorana fermion modulated nonequilibrium transport through double quantum dots
International Nuclear Information System (INIS)
Deng, Ming-Xun; Wang, Rui-Qiang; Ai, Bao-Quan; Yang, Mou; Hu, Liang-Bin; Zhong, Qing-Hu; Wang, Guang-Hui
2014-01-01
Nonequilibrium electronic transports through a double-QD-Majorana coupling system are studied with a purpose to extract the information to identify Majorana bound states (MBSs). It is found that MBSs can help form various transport processes, including the nonlocal crossed Andreev reflection, local resonant Andreev reflection, and cotunneling, depending on the relative position of two dot levels. These processes enrich the signature of average currents and noise correlations to probe the nature of MBSs. We further demonstrate the switching between the current peaks of crossed Andreev reflection and cotunneling, which is closely related to the nonlocal nature of Majorana fermions. We also propose effective physical pictures to understand these Majorana-assisted transports. - Highlights: • Majorana fermions are characterized in the signature of currents and noises. • Three types of tunneling mechanisms are realized separately. • The switching of crossed Andreev reflection and cotunneling is realized. • Concrete physical pictures are proposed to understand Majorana-assisted transports
Majorana fermion modulated nonequilibrium transport through double quantum dots
Energy Technology Data Exchange (ETDEWEB)
Deng, Ming-Xun [Laboratory of Quantum Engineering and Quantum Materials, ICMP and SPTE, South China Normal University, Guangzhou 510006 (China); Wang, Rui-Qiang, E-mail: rqwanggz@163.com [Laboratory of Quantum Engineering and Quantum Materials, ICMP and SPTE, South China Normal University, Guangzhou 510006 (China); Ai, Bao-Quan; Yang, Mou; Hu, Liang-Bin; Zhong, Qing-Hu [Laboratory of Quantum Engineering and Quantum Materials, ICMP and SPTE, South China Normal University, Guangzhou 510006 (China); Wang, Guang-Hui [Laboratory of Nanophotonic Functional Materials and Devices, South China Normal University, Guangzhou 510006 (China)
2014-06-13
Nonequilibrium electronic transports through a double-QD-Majorana coupling system are studied with a purpose to extract the information to identify Majorana bound states (MBSs). It is found that MBSs can help form various transport processes, including the nonlocal crossed Andreev reflection, local resonant Andreev reflection, and cotunneling, depending on the relative position of two dot levels. These processes enrich the signature of average currents and noise correlations to probe the nature of MBSs. We further demonstrate the switching between the current peaks of crossed Andreev reflection and cotunneling, which is closely related to the nonlocal nature of Majorana fermions. We also propose effective physical pictures to understand these Majorana-assisted transports. - Highlights: • Majorana fermions are characterized in the signature of currents and noises. • Three types of tunneling mechanisms are realized separately. • The switching of crossed Andreev reflection and cotunneling is realized. • Concrete physical pictures are proposed to understand Majorana-assisted transports.
Yakunin, M.V.; Galistu, G.; de Visser, A.
2008-01-01
Rich patterns of transformations in the structure of quantum Hall (QH) effect and magnetoresistivity under tilted magnetic fields were obtained in the InxGa1-xAs/GaAs double quantum well at mK temperatures. Local features correspond to the calculated intersections of Landau levels from different
Anisotropy and Suppression of Spin-Orbit Interaction in a GaAs Double Quantum Dot
Hofmann, A.; Maisi, V. F.; Krähenmann, T.; Reichl, C.; Wegscheider, W.; Ensslin, K.; Ihn, T.
2017-10-01
The spin-flip tunneling rates are measured in GaAs-based double quantum dots by time-resolved charge detection. Such processes occur in the Pauli spin blockade regime with two electrons occupying the double quantum dot. Ways are presented for tuning the spin-flip tunneling rate, which on the one hand gives access to measuring the Rashba and Dresselhaus spin-orbit coefficients. On the other hand, they make it possible to turn on and off the effect of spin-orbit interaction with a high on/off ratio. The tuning is accomplished by choosing the alignment of the tunneling direction with respect to the crystallographic axes, as well as by choosing the orientation of the external magnetic field with respect to the spin-orbit magnetic field. Spin lifetimes of 10 s are achieved at a tunneling rate close to 1 kHz.
Anisotropy and Suppression of Spin-Orbit Interaction in a GaAs Double Quantum Dot.
Hofmann, A; Maisi, V F; Krähenmann, T; Reichl, C; Wegscheider, W; Ensslin, K; Ihn, T
2017-10-27
The spin-flip tunneling rates are measured in GaAs-based double quantum dots by time-resolved charge detection. Such processes occur in the Pauli spin blockade regime with two electrons occupying the double quantum dot. Ways are presented for tuning the spin-flip tunneling rate, which on the one hand gives access to measuring the Rashba and Dresselhaus spin-orbit coefficients. On the other hand, they make it possible to turn on and off the effect of spin-orbit interaction with a high on/off ratio. The tuning is accomplished by choosing the alignment of the tunneling direction with respect to the crystallographic axes, as well as by choosing the orientation of the external magnetic field with respect to the spin-orbit magnetic field. Spin lifetimes of 10 s are achieved at a tunneling rate close to 1 kHz.
Charge sensing of a few-donor double quantum dot in silicon
Energy Technology Data Exchange (ETDEWEB)
Watson, T. F., E-mail: tfwatson15@gmail.com; Weber, B.; Büch, H.; Fuechsle, M.; Simmons, M. Y., E-mail: michelle.simmons@unsw.edu.au [Australian Research Council Centre of Excellence for Quantum Computation and Communication Technology, University of New South Wales, Sydney, New South Wales 2052 (Australia)
2015-12-07
We demonstrate the charge sensing of a few-donor double quantum dot precision placed with atomic resolution scanning tunnelling microscope lithography. We show that a tunnel-coupled single electron transistor (SET) can be used to detect electron transitions on both dots as well as inter-dot transitions. We demonstrate that we can control the tunnel times of the second dot to the SET island by ∼4 orders of magnitude by detuning its energy with respect to the first dot.
Closed form solution for a double quantum well using Groebner basis
Energy Technology Data Exchange (ETDEWEB)
Acus, A [Institute of Theoretical Physics and Astronomy, Vilnius University, A Gostauto 12, LT-01108 Vilnius (Lithuania); Dargys, A, E-mail: dargys@pfi.lt [Center for Physical Sciences and Technology, Semiconductor Physics Institute, A Gostauto 11, LT-01108 Vilnius (Lithuania)
2011-07-01
Analytical expressions for the spectrum, eigenfunctions and dipole matrix elements of a square double quantum well (DQW) are presented for a general case when the potential in different regions of the DQW has different heights and the effective masses are different. This was achieved by using a Groebner basis algorithm that allowed us to disentangle the resulting coupled polynomials without explicitly solving the transcendental eigenvalue equation.
Energy Technology Data Exchange (ETDEWEB)
Rogge, Maximilian Christoph
2008-12-03
This thesis describes the fabrication of different lateral single, double and triple quantum dots as well as the investigation of these devices with electronic transport. Based on GaAs/AlGaAs heterostructures, the fabrication was carried out using optical lithography and lithography with a scanning electron microscope and an atomic force microscope. The latter ones were also used in combination. Aside from basic effects like Coulomb blockade the analysis of single quantum dots particularly yielded results by charge detection and magneto transport. With charge detection using quantum point contacts conclusions were attained concerning tunneling rates and the extension of wave functions. In a magnetic field the influence of the electronic spin is important aside from aspects concerning the Fock-Darwin spectrum. Analyses were performed on Zeeman effect, spin pairing, spin blockade and Kondo effect. The combination of spin blockade and Kondo effect allows statements concerning the spin configuration, which depends on the electron number. With double quantum dots of different geometries the two mechanisms of capacitive coupling and tunnel coupling were analyzed. They were found in spectra of ground and excited states. With gate voltage and magnetic field it was possible to freely vary character and strength of coupling. With capacitive coupling, spin blockade was investigated again. The analysis of coupling effects was performed using transport and charge measurements. Aside from results on tunneling rates the latter one allows to detect molecular states. Concerning triple quantum dots the three dimensional stability diagram was analyzed. The free variation of energies of all three dots was achieved. The evolution of resonances was observed with transport and charge detection. With a starlike device geometry it was possible to perform two-path measurements. They provide a new measurand, the distinguishability of double and triple dot physics. (orig.)
Controlled high-fidelity navigation in the charge stability diagram of a double quantum dot
International Nuclear Information System (INIS)
Coden, Diego S Acosta; Romero, Rodolfo H; Räsänen, Esa
2015-01-01
We propose an efficient control protocol for charge transfer in a double quantum dot. We consider numerically a two-dimensional model system, where the quantum dots are subjected to time-dependent electric fields corresponding to experimental gate voltages. Our protocol enables navigation in the charge stability diagram from a state to another through controllable variation of the fields. We show that the well-known adiabatic Landau–Zener transition—when supplemented with a time-dependent field tailored with optimal control theory—can remarkably improve the transition speed. The results also lead to a simple control scheme obtained from the experimental charge stability diagram that requires only a single parameter. Eventually, we can achieve the ultrafast performance of the composite pulse protocol that allows the system to be driven at the quantum speed limit. (paper)
International Nuclear Information System (INIS)
An, Xing-Tao; Mu, Hui-Ying; Li, Yu-Xian; Liu, Jian-Jun
2011-01-01
A four-terminal parallel double quantum dots (QDs) device is proposed to generate and detect the spin polarization in QDs. It is found that the spin accumulation in QDs and the spin-polarized currents in the upper and down leads can be generated when a bias voltage is applied between the left and right leads. It is more interesting that the spin polarization in the QDs can be detected using the upper and down leads. Moreover, the direction and magnitude of the spin polarization in the QDs, and in the upper and down leads can be tuned by the energy levels of QDs and the bias. -- Highlights: → The spin polarization in the quantum dots can be generated and controlled. → The spin polarization in quantum dots can be detected by the nonferromagnetic leads. → The system our studied is a discrete level spin Hall system.
Electron spin resonance and spin-valley physics in a silicon double quantum dot.
Hao, Xiaojie; Ruskov, Rusko; Xiao, Ming; Tahan, Charles; Jiang, HongWen
2014-05-14
Silicon quantum dots are a leading approach for solid-state quantum bits. However, developing this technology is complicated by the multi-valley nature of silicon. Here we observe transport of individual electrons in a silicon CMOS-based double quantum dot under electron spin resonance. An anticrossing of the driven dot energy levels is observed when the Zeeman and valley splittings coincide. A detected anticrossing splitting of 60 MHz is interpreted as a direct measure of spin and valley mixing, facilitated by spin-orbit interaction in the presence of non-ideal interfaces. A lower bound of spin dephasing time of 63 ns is extracted. We also describe a possible experimental evidence of an unconventional spin-valley blockade, despite the assumption of non-ideal interfaces. This understanding of silicon spin-valley physics should enable better control and read-out techniques for the spin qubits in an all CMOS silicon approach.
Spin-orbit effects in carbon-nanotube double quantum dots
DEFF Research Database (Denmark)
Weiss, S; Rashba, E I; Kuemmeth, Ferdinand
2010-01-01
We study the energy spectrum of symmetric double quantum dots in narrow-gap carbon nanotubes with one and two electrostatically confined electrons in the presence of spin-orbit and Coulomb interactions. Compared to GaAs quantum dots, the spectrum exhibits a much richer structure because of the spin...... between the dots. For the two-electron regime, the detailed structure of the spin-orbit split energy spectrum is investigated as a function of detuning between the quantum dots in a 22-dimensional Hilbert space within the framework of a single-longitudinal-mode model. We find a competing effect......-orbit interaction that couples the electron's isospin to its real spin through two independent coupling constants. In a single dot, both constants combine to split the spectrum into two Kramers doublets while the antisymmetric constant solely controls the difference in the tunneling rates of the Kramers doublets...
Electron-nuclear interaction in 13C nanotube double quantum dots
DEFF Research Database (Denmark)
Churchill, H O H; Bestwick, A J; Harlow, J W
2009-01-01
For coherent electron spins, hyperfine coupling to nuclei in the host material can either be a dominant source of unwanted spin decoherence or, if controlled effectively, a resource enabling storage and retrieval of quantum information. To investigate the effect of a controllable nuclear...... environment on the evolution of confined electron spins, we have fabricated and measured gate-defined double quantum dots with integrated charge sensors made from single-walled carbon nanotubes with a variable concentration of 13C (nuclear spin I=1/2) among the majority zero-nuclear-spin 12C atoms. We observe...... strong isotope effects in spin-blockaded transport, and from the magnetic field dependence estimate the hyperfine coupling in 13C nanotubes to be of the order of 100 ¿µeV, two orders of magnitude larger than anticipated. 13C-enhanced nanotubes are an interesting system for spin-based quantum information...
Hot electron and real space transfer in double-quantum-well structures
International Nuclear Information System (INIS)
Okuno, Eiichi; Sawaki, Nobuhiko; Akasaki, Isamu; Kano, Hiroyuki; Hashimoto, Masafumi.
1991-01-01
The hot electron phenomena and real space transfer (RST) effect are studied in GaAs/AlGaAs double-quantum-well (DQW) structures, in which we have two kind of quantum wells with different widths. The drift velocity and the electron temperature at liquid helium temperature are investigated as a function of the external electric field applied parallel to the heterointerface. By increasing the field, the electron temperature rises and reaches a plateau in the intermediate region, followed by further rise in the high-field region. The appearance of the plateau is attributed to the RST effect between the two quantum wells. The threshold field for the appearance of the plateau is determined by the difference energy between the quantized levels in two wells. The energy loss rate as a function of the electron temperature indicates that the RST is assisted by LO phonon scattering. (author)
Energy Technology Data Exchange (ETDEWEB)
Liu, Jihong; Qiao, Shuang, E-mail: sqiao@hbu.edu.cn; Wang, Jianglong; Wang, Shufang, E-mail: sfwang@hbu.edu.cn; Fu, Guangsheng
2017-04-15
Graphical abstract: In this paper, the temperature dependence of the LPE has been experimentally studied under illumination of different lasers ranging from visible to infrared for the μc-SiOx:H/a-Si:H/c-Si p-i-n structure. It was found that the position sensitivity increases nearly linearly with wavelength from 405 nm to 980 nm in the whole temperature range, and the saturated position sensitivity decreased quickly from 32.4 mV/mm to a very low value of 1.26 mV/mm and the nonlinearity improved from 7.01% to 3.54% with temperature decreasing from 296 K to 80 K for 532 nm laser illumination. By comparing the experiment results of μc-SiOx:H/a-Si:H/c-Si and ITO/c-Si, it is suggest that the position sensitivity was mainly determined by the temperature-dependent SB and the nonlinearity was directly related to the decreased resistivity of conductive layer. When an external bias voltage was applied, the LPE improved greatly and the position sensitivity of 361.35 mV/mm under illumination of 80 mW at 80 K is 286.7 times as large as that without biased voltage. More importantly, both the position sensitivity and the nonlinearity were independent of temperature again, which can be ascribed to the large constant transmission probability and diffusion length induced by the greatly increased SB. Our research provides an essential insight on the bias voltage-modulated LPE at different temperatures, and this temperature-independent greatly improved LPE is thought to be very useful for developing novel photoelectric devices. - Highlights: • The LPE is proportional to the laser wavelength in the whole temperature range. • The LPE decreases gradually with decreasing temperature from 296 K to 80 K. • Nonlinearity of the LPV curve improves a little with decreasing temperature. • The LPE improves dramatically and is independent of temperature with the aid of a bias voltage. - Abstract: The lateral photovoltaic effect (LPE) in μc-SiOx:H/a-Si:H/c-Si p-i-n structure is studied
Quantum properties of double kicked systems with classical translational invariance in momentum
Dana, Itzhack
2015-01-01
Double kicked rotors (DKRs) appear to be the simplest nonintegrable Hamiltonian systems featuring classical translational symmetry in phase space (i.e., in angular momentum) for an infinite set of values (the rational ones) of a parameter η . The experimental realization of quantum DKRs by atom-optics methods motivates the study of the double kicked particle (DKP). The latter reduces, at any fixed value of the conserved quasimomentum β ℏ , to a generalized DKR, the "β -DKR ." We determine general quantum properties of β -DKRs and DKPs for arbitrary rational η . The quasienergy problem of β -DKRs is shown to be equivalent to the energy eigenvalue problem of a finite strip of coupled lattice chains. Exact connections are then obtained between quasienergy spectra of β -DKRs for all β in a generically infinite set. The general conditions of quantum resonance for β -DKRs are shown to be the simultaneous rationality of η ,β , and a scaled Planck constant ℏS. For rational ℏS and generic values of β , the quasienergy spectrum is found to have a staggered-ladder structure. Other spectral structures, resembling Hofstadter butterflies, are also found. Finally, we show the existence of particular DKP wave-packets whose quantum dynamics is free, i.e., the evolution frequencies of expectation values in these wave-packets are independent of the nonintegrability. All the results for rational ℏS exhibit unique number-theoretical features involving η ,ℏS, and β .
Gu, Jun; Lin, Po-hua; Hwang, Tzonelih
2018-07-01
Recently, Zou and Qiu (Sci China Phys Mech Astron 57:1696-1702, 2014) proposed a three-step semi-quantum secure direct communication protocol allowing a classical participant who does not have a quantum register to securely send his/her secret message to a quantum participant. However, this study points out that an eavesdropper can use the double C-NOT attack to obtain the secret message. To solve this problem, a modification is proposed.
Quantum double-well chain: Ground-state phases and applications to hydrogen-bonded materials
International Nuclear Information System (INIS)
Wang, X.; Campbell, D.K.; Gubernatis, J.E.
1994-01-01
Extrapolating the results of hybrid quantum Monte Carlo simulations to the zero temperature and infinite-chain-length limits, we calculate the ground-state phase diagram of a system of quantum particles on a chain of harmonically coupled, symmetric, quartic double-well potentials. We show that the ground state of this quantum chain depends on two parameters, formed from the ratios of the three natural energy scales in the problem. As a function of these two parameters, the quantum ground state can exhibit either broken symmetry, in which the expectation values of the particle's coordinate are all nonzero (as would be the case for a classical chain), or restored symmetry, in which the expectation values of the particle's coordinate are all zero (as would be the case for a single quantum particle). In addition to the phase diagram as a function of these two parameters, we calculate the ground-state energy, an order parameter related to the average position of the particle, and the susceptibility associated with this order parameter. Further, we present an approximate analytic estimate of the phase diagram and discuss possible physical applications of our results, emphasizing the behavior of hydrogen halides under pressure
Entanglement of mixed quantum states for qubits and qudit in double photoionization of atoms
Energy Technology Data Exchange (ETDEWEB)
Chakraborty, M., E-mail: bminakshi@yahoo.com [Department of Physics, Asansol Girls’ College, Asansol 713304 (India); Sen, S. [Department of Physics, Triveni Devi Bhalotia College, Raniganj 713347 (India)
2015-08-15
Highlights: • We study tripartite entanglement between two electronic qubits and an ionic qudit. • We study bipartite entanglement between any two subsystems of a tripartite system. • We have presented a quantitative application of entangled properties in Neon atom. - Abstract: Quantum entanglement and its paradoxical properties are genuine physical resources for various quantum information tasks like quantum teleportation, quantum cryptography, and quantum computer technology. The physical characteristic of the entanglement of quantum-mechanical states, both for pure and mixed, has been recognized as a central resource in various aspects of quantum information processing. In this article, we study the bipartite entanglement of one electronic qubit along with the ionic qudit and also entanglement between two electronic qubits. The tripartite entanglement properties also have been investigated between two electronic qubits and an ionic qudit. All these studies have been done for the single-step double photoionization from an atom following the absorption of a single photon without observing spin orbit interaction. The dimension of the Hilbert space of the qudit depends upon the electronic state of the residual photoion A{sup 2+}. In absence of SOI, when Russell–Saunders coupling (L–S coupling) is applicable, dimension of the qudit is equal to the spin multiplicity of A{sup 2+}. For estimations of entanglement and mixedness, we consider the Peres–Horodecki condition, concurrence, entanglement of formation, negativity, linear and von Neumann entropies. In case of L–S coupling, all the properties of a qubit–qudit system can be predicted merely with the knowledge of the spins of the target atom and the residual photoion.
Korenev, V. V.; Savelyev, A. V.; Zhukov, A. E.; Omelchenko, A. V.; Maximov, M. V.
2014-12-01
It is shown in analytical form that the carrier capture from the matrix as well as carrier dynamics in quantum dots plays an important role in double-state lasing phenomenon. In particular, the de-synchronization of hole and electron captures allows one to describe recently observed quenching of ground-state lasing, which takes place in quantum dot lasers operating in double-state lasing regime at high injection. From the other side, the detailed analysis of charge carrier dynamics in the single quantum dot enables one to describe the observed light-current characteristics and key temperature dependences.
International Nuclear Information System (INIS)
Korenev, V V; Savelyev, A V; Zhukov, A E; Omelchenko, A V; Maximov, M V
2014-01-01
It is shown in analytical form that the carrier capture from the matrix as well as carrier dynamics in quantum dots plays an important role in double-state lasing phenomenon. In particular, the de-synchronization of hole and electron captures allows one to describe recently observed quenching of ground-state lasing, which takes place in quantum dot lasers operating in double-state lasing regime at high injection. From the other side, the detailed analysis of charge carrier dynamics in the single quantum dot enables one to describe the observed light-current characteristics and key temperature dependences
Energy Technology Data Exchange (ETDEWEB)
Wang, Wei; Dong, Yuan; D' Costa, Vijay Richard; Yeo, Yee-Chia, E-mail: yeo@ieee.org [Department of Electrical and Computer Engineering, National University of Singapore, Singapore 117576 (Singapore); Vajandar, Saumitra; Lim, Sin Leng; Osipowicz, Thomas; Tok, Eng Soon [Department of Physics and Yale-NUS College, National University of Singapore, Singapore 117551 (Singapore)
2016-04-21
The in-situ Ga doping technique was used to form heavily p-type doped germanium-tin (Ge{sub 1−x}Sn{sub x}) layers by molecular beam epitaxy, avoiding issues such as Sn precipitation and surface segregation at high annealing temperatures that are associated with the alternative implant and anneal approach. In this way, an electrically active Ga concentration of up to ∼3.2 × 10{sup 20 }cm{sup −3} can be realized for Ge{sub 1−x}Sn{sub x}. The impacts of varying the Ga concentration on the crystalline quality and the mobility of p-type Ge{sub 1−x}Sn{sub x} were investigated. High crystalline quality Ge{sub 0.915}Sn{sub 0.085} can be realized with an active Ga concentration of up to ∼1.2 × 10{sup 20 }cm{sup −3}. More than 98% of the Sn atoms are located on substitutional lattice sites, although the substitutionality of Sn in p-type Ge{sub 1−x}Sn{sub x} decreases with an increasing Ga concentration. When the Ga concentration introduced is higher than 3.2 × 10{sup 20 }cm{sup −3}, excess Ga atoms cannot be substitutionally incorporated, and segregation of Ga and Sn towards the surface during growth is observed. The in-situ Ga-doped Ge{sub 0.915}Sn{sub 0.085} epitaxy was integrated in a Ge{sub 0.915}Sn{sub 0.085}-on-Si p-i-n (PIN) photodiode fabrication process, and well-behaved Ge{sub 0.915}Sn{sub 0.085}/Si PIN junction characteristics were obtained. A large forward-bias current to reverse bias current ratio of 6 × 10{sup 4} and a low reverse current (dark current) of 0.24 μA were achieved at V{sub bias} = −1 V.
Kurian, P; Dunston, G; Lindesay, J
2016-02-21
Macroscopic quantum effects in living systems have been studied widely in pursuit of fundamental explanations for biological energy transport and sensing. While it is known that type II endonucleases, the largest class of restriction enzymes, induce DNA double-strand breaks by attacking phosphodiester bonds, the mechanism by which simultaneous cutting is coordinated between the catalytic centers remains unclear. We propose a quantum mechanical model for collective electronic behavior in the DNA helix, where dipole-dipole oscillations are quantized through boundary conditions imposed by the enzyme. Zero-point modes of coherent oscillations would provide the energy required for double-strand breakage. Such quanta may be preserved in the presence of thermal noise by the enzyme's displacement of water surrounding the DNA recognition sequence. The enzyme thus serves as a decoherence shield. Palindromic mirror symmetry of the enzyme-DNA complex should conserve parity, because symmetric bond-breaking ceases when the symmetry of the complex is violated or when physiological parameters are perturbed from optima. Persistent correlations in DNA across longer spatial separations-a possible signature of quantum entanglement-may be explained by such a mechanism. Copyright © 2015 Elsevier Ltd. All rights reserved.
Electron transport in a double quantum ring: Evidence of an AND gate
International Nuclear Information System (INIS)
Maiti, Santanu K.
2009-01-01
We explore AND gate response in a double quantum ring where each ring is threaded by a magnetic flux φ. The double quantum ring is attached symmetrically to two semi-infinite one-dimensional metallic electrodes and two gate voltages, namely, V a and V b , are applied, respectively, in the lower arms of the two rings which are treated as two inputs of the AND gate. The system is described in the tight-binding framework and the calculations are done using the Green's function formalism. Here we numerically compute the conductance-energy and current-voltage characteristics as functions of the ring-to-electrode coupling strengths, magnetic flux and gate voltages. Our study suggests that, for a typical value of the magnetic flux φ=φ 0 /2 (φ 0 =ch/e, the elementary flux-quantum) a high output current (1) (in the logical sense) appears only if both the two inputs to the gate are high (1), while if neither or only one input to the gate is high (1), a low output current (0) results. It clearly demonstrates the AND gate behavior and this aspect may be utilized in designing an electronic logic gate.
Jin, Jinshuang; Wang, Shikuan; Zhou, Jiahuan; Zhang, Wei-Min; Yan, YiJing
2018-04-01
We investigate the dynamics of charge-state coherence in a degenerate double-dot Aharonov–Bohm interferometer with finite inter-dot Coulomb interactions. The quantum coherence of the charge states is found to be sensitive to the transport setup configurations, involving both the single-electron impurity channels and the Coulomb-assisted ones. We numerically demonstrate the emergence of a complete coherence between the two charge states, with the relative phase being continuously controllable through the magnetic flux. Interestingly, a fully coherent charge qubit arises at the double-dots electron pair tunneling resonance condition, where the chemical potential of one electrode is tuned at the center between a single-electron impurity channel and the related Coulomb-assisted channel. This pure quantum state of charge qubit could be experimentally realized at the current–voltage characteristic turnover position, where differential conductance sign changes. We further elaborate the underlying mechanism for both the real-time and the stationary charge-states coherence in the double-dot systems of study.
Frequency doubling of an InGaAs multiple quantum wells semiconductor disk laser
Lidan, Jiang; Renjiang, Zhu; Maohua, Jiang; Dingke, Zhang; Yuting, Cui; Peng, Zhang; Yanrong, Song
2018-01-01
We demonstrate a good beam quality 483 nm blue coherent radiation from a frequency doubled InGaAs multiple quantum wells semiconductor disk laser. The gain chip is consisted of 6 repeats of strain uncompensated InGaAs/GaAs quantum wells and 25 pairs of GaAs/AlAs distributed Bragg reflector. A 4 × 4 × 7 mm3 type I phase-matched BBO nonlinear crystal is used in a V-shaped laser cavity for the second harmonic generation, and 210 mW blue output power is obtained when the absorbed pump power is 3.5 W. The M2 factors of the laser beam in x and y directions are about 1.04 and 1.01, respectively. The output power of the blue laser is limited by the relatively small number of the multiple quantum wells, and higher power can be expected by increasing the number of the multiple quantum wells and improving the heat management of the laser.
Intrinsic errors in transporting a single-spin qubit through a double quantum dot
Li, Xiao; Barnes, Edwin; Kestner, J. P.; Das Sarma, S.
2017-07-01
Coherent spatial transport or shuttling of a single electron spin through semiconductor nanostructures is an important ingredient in many spintronic and quantum computing applications. In this work we analyze the possible errors in solid-state quantum computation due to leakage in transporting a single-spin qubit through a semiconductor double quantum dot. In particular, we consider three possible sources of leakage errors associated with such transport: finite ramping times, spin-dependent tunneling rates between quantum dots induced by finite spin-orbit couplings, and the presence of multiple valley states. In each case we present quantitative estimates of the leakage errors, and discuss how they can be minimized. The emphasis of this work is on how to deal with the errors intrinsic to the ideal semiconductor structure, such as leakage due to spin-orbit couplings, rather than on errors due to defects or noise sources. In particular, we show that in order to minimize leakage errors induced by spin-dependent tunnelings, it is necessary to apply pulses to perform certain carefully designed spin rotations. We further develop a formalism that allows one to systematically derive constraints on the pulse shapes and present a few examples to highlight the advantage of such an approach.
Oscillations of quantum transport through double-AB rings with magnetic impurity
International Nuclear Information System (INIS)
Gao Yingfang; Liang, J-Q
2006-01-01
We have studied the effect of impurity scattering on the quantum transport through double AB rings in the presence of spin-flipper in the middle lead in terms of one-dimensional quantum waveguide theory. The electron interacts with the impurity through the exchange interaction leading to spin-flip scattering. Transmissions in the spin-flipped and non-spin-flipped channels are calculated explicitly. It is found that the overall transmission and the conductance are distorted due to the impurity scattering. The extent of distortion not only depends on the strength of the impurity potential but also on the impurity position. Moreover, the transmission probability and the conductance are modulated by the magnetic flux, the size of the ring and the impurity potential strength as well
Electronic structures of GaAs/AlxGa1-xAs quantum double rings
Directory of Open Access Journals (Sweden)
Li Shu-Shen
2006-01-01
Full Text Available AbstractIn the framework of effective mass envelope function theory, the electronic structures of GaAs/AlxGa1-xAs quantum double rings (QDRs are studied. Our model can be used to calculate the electronic structures of quantum wells, wires, dots, and the single ring. In calculations, the effects due to the different effective masses of electrons and holes in GaAs and AlxGa1-xAs and the valence band mixing are considered. The energy levels of electrons and holes are calculated for different shapes of QDRs. The calculated results are useful in designing and fabricating the interrelated photoelectric devices. The single electron states presented here are useful for the study of the electron correlations and the effects of magnetic fields in QDRs.
Cho, Seungho; Jung, Sungwook; Jeong, Sanghwa; Bang, Jiwon; Park, Joonhyuck; Park, Youngrong; Kim, Sungjee
2013-01-08
Layered double hydroxide-quantum dot (LDH-QD) composites are synthesized via a room temperature LDH formation reaction in the presence of QDs. InP/ZnS (core/shell) QD, a heavy metal free QD, is used as a model constituent. Interactions between QDs (with negative zeta potentials), decorated with dihydrolipoic acids, and inherently positively charged metal hydroxide layers of LDH during the LDH formations are induced to form the LDH-QD composites. The formation of the LDH-QD composites affords significantly enhanced photoluminescence quantum yields and thermal- and photostabilities compared to their QD counterparts. In addition, the fluorescence from the solid LDH-QD composite preserved the initial optical properties of the QD colloid solution without noticeable deteriorations such as red-shift or deep trap emission. Based on their advantageous optical properties, we also demonstrate the pseudo white light emitting diode, down-converted by the LDH-QD composites.
Quantum interference effects on the intensity of the G modes in double-walled carbon nanotubes
International Nuclear Information System (INIS)
Tran, Huy Nam; Blancon, Jean-Christophe Robert; Arenal, Raul
2017-01-01
The effects of quantum interferences on the excitation dependence of the intensity of G modes have been investigated on single-walled carbon nanotubes [Duque et al., Phys. Rev. Lett.108, 117404 (2012)]. In this work, by combining optical absorption spectroscopy and Raman scattering on individual index identified double-walled carbon nanotubes, we examine the experimental excitation dependence of the intensity of longitudinal optical and transverse optical G modes of the constituent inner and outer single-walled carbon nanotubes. The observed striking dependencies are understood in terms of quantum interference effects. Considering such effects, the excitation dependence of the different components of the G modes permit to unambiguously assign each of them as originating from the longitudinal or transverse G modes of inner and outer tubes.
International Nuclear Information System (INIS)
Luna, E.; Hopkinson, M.; Ulloa, J. M.; Guzman, A.; Munoz, E.
2003-01-01
Near-infrared detection is reported for a double-barrier quantum-well infrared photodetector based on a 30-A GaAs 1-y N y (y≅0.01) quantum well. The growth procedure using plasma-assisted molecular-beam epitaxy is described. The as-grown sample exhibits a detection wavelength of 1.64 μm at 25 K. The detection peak strengthens and redshifts to 1.67 μm following rapid thermal annealing at 850 deg. C for 30 s. The detection peak position is consistent with the calculated band structure based on the band-anticrossing model for nitrogen incorporation into GaAs
International Nuclear Information System (INIS)
Kannan, E S; Karamad, M; Kim, Gil-Ho; Farrer, I; Ritchie, D A
2010-01-01
Magnetotransport measurements were performed in two widely separated double quantum well systems with different starting disorders. In the weak magnetic field regime, a crossover from negative to positive magnetoresistance in the longitudinal resistivity was observed in the system with weak disorder when the electron densities in the neighboring wells were significantly unbalanced. The crossover was found to be the result of the exchange-energy-assisted interactions between the electrons occupying the lowest subbands in the neighboring wells. In the case of the system with strong disorder short range scattering dominated the scattering process and no such transition in longitudinal resistivity in the low magnetic field regime was observed. However, at high magnetic fields, sharp peaks were observed in the Hall resistance due to the interaction between the edge states in the quantum Hall regime.
Magnetospectroscopy of symmetric and anti-symmetric states in double quantum wells
Marchewka, M.; Sheregii, E. M.; Tralle, I.; Ploch, D.; Tomaka, G.; Furdak, M.; Kolek, A.; Stadler, A.; Mleczko, K.; Zak, D.; Strupinski, W.; Jasik, A.; Jakiela, R.
2008-02-01
The experimental results obtained for magnetotransport in the InGaAs/InAlAs double quantum well (DQW) structures of two different shapes of wells are reported. A beating effect occurring in the Shubnikov-de Haas (SdH) oscillations was observed for both types of structures at low temperatures in the parallel transport when the magnetic field was perpendicular to the layers. An approach for the calculation of the Landau level energies for DQW structures was developed and then applied to the analysis and interpretation of the experimental data related to the beating effect. We also argue that in order to account for the observed magnetotransport phenomena (SdH and integer quantum Hall effect), one should introduce two different quasi-Fermi levels characterizing two electron subsystems regarding the symmetry properties of their states, symmetric and anti-symmetric ones, which are not mixed by electron-electron interaction.
Dynamical entanglement formation and dissipation effects in two double quantum dots
Energy Technology Data Exchange (ETDEWEB)
Contreras-Pulido, L D [Centro de Investigacion CientIfica y de Educacion Superior de Ensenada, Apartado Postal 2732, Ensenada, BC 22860 (Mexico); Rojas, F [Departamento de Fisica Teorica, Centro de Ciencias de la Materia Condensada, Universidad Nacional Autonoma de Mexico, Ensenada, Baja California 22800 (Mexico)
2006-11-01
We study the static and dynamic formation of entanglement in charge states of a two double quantum dot array with two mobile electrons under the effect of an external driving field. We include dissipation via contact with a phonon bath. By using the density matrix formalism and an open quantum system approach, we describe the dynamical behaviour of the charge distribution (polarization), concurrence (measure of the degree of entanglement) and Bell state probabilities (two qubit states with maximum entanglement) of such a system, including the role of dot asymmetry and temperature effects. Our results show that it is possible to obtain entangled states as well as a most probable Bell state, which can be controlled by the driving field. We also evaluate how the entanglement formation based on charge states deteriorates as the temperature or asymmetry increases.
Harmonic mode-locking using the double interval technique in quantum dot lasers.
Li, Yan; Chiragh, Furqan L; Xin, Yong-Chun; Lin, Chang-Yi; Kim, Junghoon; Christodoulou, Christos G; Lester, Luke F
2010-07-05
Passive harmonic mode-locking in a quantum dot laser is realized using the double interval technique, which uses two separate absorbers to stimulate a specific higher-order repetition rate compared to the fundamental. Operating alone these absorbers would otherwise reinforce lower harmonic frequencies, but by operating together they produce the harmonic corresponding to their least common multiple. Mode-locking at a nominal 60 GHz repetition rate, which is the 10(th) harmonic of the fundamental frequency of the device, is achieved unambiguously despite the constraint of a uniformly-segmented, multi-section device layout. The diversity of repetition rates available with this method is also discussed.
Interplay of coupling and superradiant emission in the optical response of a double quantum dot
Sitek, Anna; Machnikowski, Paweł
2009-09-01
We study theoretically the optical response of a double quantum dot structure to an ultrafast optical excitation. We show that the interplay of a specific type of coupling between the dots and their collective interaction with the radiative environment leads to very characteristic features in the time-resolved luminescence as well as in the absorption spectrum of the system. For a sufficiently strong coupling, these effects survive even if the transition energy mismatch between the two dots exceeds by far the emission linewidth.
Energy Technology Data Exchange (ETDEWEB)
Chen, Yuan; Deng, Li [Department of Applied Physics, East China Jiaotong University, Nanchang, 330013 (China); Chen, Aixi, E-mail: aixichen@ecjtu.jx.cn [Department of Applied Physics, East China Jiaotong University, Nanchang, 330013 (China); Institute for Quantum Computing, University of Waterloo, Ontario N2L 3G1 (Canada)
2015-02-15
We investigate the nonlinear optical phenomena of the optical bistability and multistability via spontaneously generated coherence in an asymmetric double quantum well structure coupled by a weak probe field and a controlling field. It is shown that the threshold and hysteresis cycle of the optical bistability can be conveniently controlled only by adjusting the intensity of the SGC or the controlling field. Moreover, switching between optical bistability and multistability can be achieved. These studies may have practical significance for the preparation of optical bistable switching device.
International Nuclear Information System (INIS)
Chen, Yuan; Deng, Li; Chen, Aixi
2015-01-01
We investigate the nonlinear optical phenomena of the optical bistability and multistability via spontaneously generated coherence in an asymmetric double quantum well structure coupled by a weak probe field and a controlling field. It is shown that the threshold and hysteresis cycle of the optical bistability can be conveniently controlled only by adjusting the intensity of the SGC or the controlling field. Moreover, switching between optical bistability and multistability can be achieved. These studies may have practical significance for the preparation of optical bistable switching device
Luminescence spectra of CdSe/ZnSe double layers of quantum dots
Energy Technology Data Exchange (ETDEWEB)
Reznitsky, Alexander; Permogorov, Sergei; Korenev, Vladimir V.; Sedova, Irina; Sorokin, Sergey; Sitnikova, Alla; Ivanov, Sergei [A.F. Ioffe Physico-Technical Institute, Polytekhnicheskaya 26, 194021 St. Petersburg (Russian Federation); Klochikhin, Albert [B.P. Konstantinov Nuclear Physics Institute, St. Petersburg (Russian Federation)
2009-12-15
We have studied the emission spectra and structural properties of double CdSe/ZnSe quantum dot (QD) sheet structures grown by molecular beam epitaxy in order to elucidate the mechanisms of the electronic and strain field interaction between the QD planes. The thickness of the ZnSe barrier separating the CdSe sheets was in the range of 10-60 monolayers (ML) in the set of samples studied. We have found that coupling between dots in adjacent layers becomes relatively strong in CdSe/ZnSe double layers structures with 25-27 ML barrier, while it is rather weak when the barrier thickness exceeds 30 ML. (copyright 2009 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)
Three-dimensional gravity and Drinfel'd doubles: Spacetimes and symmetries from quantum deformations
International Nuclear Information System (INIS)
Ballesteros, Angel; Herranz, Francisco J.; Meusburger, Catherine
2010-01-01
We show how the constant curvature spacetimes of 3d gravity and the associated symmetry algebras can be derived from a single quantum deformation of the 3d Lorentz algebra sl(2,R). We investigate the classical Drinfel'd double of a 'hybrid' deformation of sl(2,R) that depends on two parameters (η,z). With an appropriate choice of basis and real structure, this Drinfel'd double agrees with the 3d anti-de Sitter algebra. The deformation parameter η is related to the cosmological constant, while z is identified with the inverse of the speed of light and defines the signature of the metric. We generalise this result to de Sitter space, the three-sphere and 3d hyperbolic space through analytic continuation in η and z; we also investigate the limits of vanishing η and z, which yield the flat spacetimes (Minkowski and Euclidean spaces) and Newtonian models, respectively.
Improving the variational path integral approach to the quantum double-well potential
International Nuclear Information System (INIS)
Bao Jingdong; Wang Hongyu
2002-01-01
An improved variational path integral approach is developed and applied to the quantum double-well potential, in which part of the quartic term of the potential is included in the trial action. The expression of the effective classical potential (ECP) under a non-Gaussian expectation is obtained. Here the frequency and fourth-order derivative of the potential are treated as two variational parameters, determined by the minimization of the ECP at each point. We calculate the ECP, the free energy and the level splitting of a symmetrical double-well potential. It is shown that the present results are better than those of the Feynman-Kleinert Gaussian variational method. (author)
Bishop, Nathaniel; Young, Ralph; Borras Pinilla, Carlos; Stalford, Harold; Nielsen, Erik; Muller, Richard; Rahman, Rajib; Tracy, Lisa; Wendt, Joel; Lilly, Michael; Carroll, Malcolm
2012-02-01
We discuss trade-offs of different double quantum dot and charge sensor lay-outs using computer assisted design (CAD). We use primarily a semi-classical model, augmented with a self-consistent configuration interaction method. Although CAD for quantum dots is difficult due to uncontrolled factors (e.g., disorder), different ideal designs can still be compared. Comparisons of simulation and measured dot characteristics, such as capacitance, show that CAD can agree well with experiment for relevant cases. CAD results comparing several different designs will be discussed including a comparison to measurement results from the same designs. Trade-offs between poly-silicon and metal gate lay-outs will also be discussed. This work was performed, in part, at the Center for Integrated Nanotechnologies, a U.S. DOE, Office of Basic Energy Sciences user facility. The work was supported by the Sandia National Laboratories Directed Research and Development Program. Sandia National Laboratories is a multi-program laboratory managed and operated by Sandia Corporation, a wholly owned subsidiary of Lockheed Martin Corporation, for the U.S. Department of Energy's National Nuclear Security Administration under contract DE-AC04-94AL85000.
International Nuclear Information System (INIS)
Luque, N.B.; Woelki, S.; Henderson, D.; Schmickler, W.
2011-01-01
Highlights: · We augment a double-layer model based on integral equations by calculating the interaction parameters with the electrode from quantum density functional theory · Explicit model calculations for Ag(1 1 1) in aqueous solutions give at least qualitatively good results for the particle profiles · Ours is the only method which allows the calculation of capacity-charge characteristics. · We obtain reasonable values for the Helmholtz (inner-layer) capacity. - Abstract: We have complemented the singlet reference interaction site model for the electric double layer by quantum chemical calculations for the interaction of ions and solvents with an electrode. Specific calculations have been performed for an aqueous solution of NaCl in contact with a Ag(1 1 1) electrode. The particle profiles near the electrode show the specific adsorption of Cl - ions, but not of Na + , and are at least in qualitative agreement with those obtained by molecular dynamics. Including the electronic response of the silver surface into the model results in reasonable capacity-charge characteristics.
Ultraclean single, double, and triple carbon nanotube quantum dots with recessed Re bottom gates
Jung, Minkyung; Schindele, Jens; Nau, Stefan; Weiss, Markus; Baumgartner, Andreas; Schoenenberger, Christian
2014-03-01
Ultraclean carbon nanotubes (CNTs) that are free from disorder provide a promising platform to manipulate single electron or hole spins for quantum information. Here, we demonstrate that ultraclean single, double, and triple quantum dots (QDs) can be formed reliably in a CNT by a straightforward fabrication technique. The QDs are electrostatically defined in the CNT by closely spaced metallic bottom gates deposited in trenches in Silicon dioxide by sputter deposition of Re. The carbon nanotubes are then grown by chemical vapor deposition (CVD) across the trenches and contacted using conventional electron beam lithography. The devices exhibit reproducibly the characteristics of ultraclean QDs behavior even after the subsequent electron beam lithography and chemical processing steps. We demonstrate the high quality using CNT devices with two narrow bottom gates and one global back gate. Tunable by the gate voltages, the device can be operated in four different regimes: i) fully p-type with ballistic transport between the outermost contacts (over a length of 700 nm), ii) clean n-type single QD behavior where a QD can be induced by either the left or the right bottom gate, iii) n-type double QD and iv) triple bipolar QD where the middle QD has opposite doping (p-type). Research at Basel is supported by the NCCR-Nano, NCCR-QIST, ERC project QUEST, and FP7 project SE2ND.
Simulation and optimization of deep violet InGaN double quantum well laser
Alahyarizadeh, Gh.; Ghazai, A. J.; Rahmani, R.; Mahmodi, H.; Hassan, Z.
2012-03-01
The performance characteristics of a deep violet InGaN double quantum well laser diode (LD) such as threshold current ( Ith), external differential quantum efficiency (DQE) and output power have been investigated using the Integrated System Engineering Technical Computer Aided Design (ISE-TCAD) software. As well as its operating parameters such as internal quantum efficiency ( ηi), internal loss ( αi) and transparency threshold current density ( J0) have been studied. Since, we are interested to investigate the mentioned characteristics and parameters independent of well and barrier thickness, therefore to reach a desired output wavelength, the indium mole fraction of wells and barriers has been varied consequently. The indium mole fractions of well and barrier layers have been considered 0.08 and 0.0, respectively. Some important parameters such as Al mole fraction of the electronic blocking layer (EBL) and cavity length which affect performance characteristics were also investigated. The optimum values of the Al mole fraction and cavity length in this study are 0.15 and 400 μm, respectively. The lowest threshold current, the highest DQE and output power which obtained at the emission wavelength of 391.5 nm are 43.199 mA, 44.99% and 10.334 mW, respectively.
Study of plasmonics in hybrids made from a quantum emitter and double metallic nanoshell dimer
Guo, Jiaohan; Black, Kevin; Hu, Jiawen; Singh, Mahi
2018-05-01
We developed a theory for the fluorescence (FL) for quantum emitter and double metallic nanoshell dimer hybrids using the density matrix method. The dimer is made from two identical double metallic nanoshells, which are made of a dielectric core, a gold metallic shell and a dielectric spacer layer. The quantum emitters are deposited on the surface of the spacer layers of the dimers due to the electrostatic absorptions. We consider that dimer hybrids are surrounded by biological cells. This can be achieved by injecting them into human or animal cells. The surface plasmon polaritons (SPP) are calculated for the dimer using Maxwell’s equations in the static wave approximation. The calculated SPP energy agrees with experimental data from Zhai et al (2017 Plasmonics 12 263) for the dimer made from a silica core, a gold metallic nanoshell and a silica spacer layer. We have also obtained an analytical expression of the FL using the density matrix method. We compare our theory with FL experimental data from Zhai et al (2017 Plasmonics 12 263) where the FL spectrum was measured by varying the thickness of the spacer layer from 9 nm to 40 nm. A good agreement between theory and experiment is found. We have shown that the enhancement of the FL increases as the thickness of the spacer layer decreases. We have also found that the enhancement of the FL increases as the distance between the double metallic nanoshells in the dimer decreases. These are interesting findings which are consistent with the experiments of Zhai et al (2017 Plasmonics 12 263) and can be used to control the FL enhancement in the FL-based biomedical imaging and cancer treatment. These interesting findings may also be useful in the fabrication of nanosensors and nanoswitches for applications in medicine.
International Nuclear Information System (INIS)
Tauasarov, K.
1997-01-01
The work devoted to investigation and control of structural, optical and photoelectric properties of films of amorphous hydrogenated silicon and its alloys, deposited in glow discharge of a constant current were done, creation of photo transformed p-i-n structures investigation its photoelectric characteristics. The main results and conclusions: A new method of deposition in glow discharge of a constant current qualitative doping and un doping a-Si:H layer and p-i-n structures on the basis of amorphous hydrogenated silicon was developed. For reception of amorphous p + and n - films for first time synthesised and applied mono-silborina and mono-silphosfin, containing pointed Si-B and Si-P linkages. New layered linear - organized structure in the films a-Si:H (T=200 deg C) was found out with distance between layers 7,5 A-o. Degree of crystallinity from combinational spectrum was determined. Concentration of films and connection between a hydrogen and silicon was determined from a IR-spectrum. It was shown that introduction of vary zone p + layer from a-Si x C 1-x :H into photo transformed p-i-n structure on the basis of a-Si:H results to decreasing of recombination losses in the area of p-i hetero boundary, and as result a photosensitive in the short-wave area of a spectrum increased. Best p-i-n structures in condition of natural illumination had following parameters: density of current of short circuit I sc =12,9 m A/cm 2 , voltage in single course U lm =0,85 V, factor of Ff.=0,55 filling and h=7% efficiency. (author)
International Nuclear Information System (INIS)
Li Weidong; Liu Jie
2006-01-01
In the present paper we investigate the influence of measurements on the quantum dynamics of degenerate Bose atoms gases in a symmetric double well. We show that continuous measurements enhance asymmetry on the density distribution of the atoms and broaden the parameter regime for self-trapping. We term this phenomenon as nonlinear quantum Zeno effect in analog to the celebrated Zeno effect in a linear quantum system. Under discontinuous measurements, the self-trapping due to the atomic interaction in the degenerate bosons is shown to be destroyed completely. Underlying physics is revealed and possible experimental realization is discussed
Universal set of quantum gates for double-dot exchange-only spin qubits with intradot coupling
International Nuclear Information System (INIS)
Michielis, M De; Ferraro, E; Fanciulli, M; Prati, E
2015-01-01
We present a universal set of quantum gate operations based on exchange-only spin qubits in a double quantum dot, where each qubit is obtained by three electrons in the (2,1) filling. Gate operations are addressed by modulating electrostatically the tunneling barrier and the energy offset between the two dots, singly and doubly occupied respectively. We propose explicit gate sequences of single qubit operations for arbitrary rotations, and the two-qubit controlled NOT gate, to complete the universal set. The unswitchable interaction between the two electrons of the doubly occupied quantum dot is taken into account. Short gate times are obtained by employing spin density functional theory simulations. (paper)
Energy Technology Data Exchange (ETDEWEB)
Tagliaferri, M.L.V., E-mail: marco.tagliaferri@mdm.imm.cnr.it [Laboratorio MDM, CNR-IMM, Via C. Olivetti 2, 20864 Agrate Brianza (MB) (Italy); Dipartimento di Scienza dei Materiali, Università di Milano Bicocca, Via Cozzi 53, 20125 Milano (Italy); Crippa, A. [Laboratorio MDM, CNR-IMM, Via C. Olivetti 2, 20864 Agrate Brianza (MB) (Italy); Dipartimento di Scienza dei Materiali, Università di Milano Bicocca, Via Cozzi 53, 20125 Milano (Italy); De Michielis, M. [Laboratorio MDM, CNR-IMM, Via C. Olivetti 2, 20864 Agrate Brianza (MB) (Italy); Mazzeo, G.; Fanciulli, M. [Laboratorio MDM, CNR-IMM, Via C. Olivetti 2, 20864 Agrate Brianza (MB) (Italy); Dipartimento di Scienza dei Materiali, Università di Milano Bicocca, Via Cozzi 53, 20125 Milano (Italy); Prati, E. [Laboratorio MDM, CNR-IMM, Via C. Olivetti 2, 20864 Agrate Brianza (MB) (Italy); Istituto di Fotonica e Nanotecnologie, CNR, Piazza Leonardo da Vinci 32, 20133 Milano (Italy)
2016-03-11
We report on the fabrication and the characterization of a tunable complementary-metal oxide semiconductor (CMOS) system consisting of two quantum dots and a MOS single electron transistor (MOSSET) charge sensor. By exploiting a compact T-shaped design and few gates fabricated by electron beam lithography, the MOSSET senses the charge state of either a single or double quantum dot at 4.2 K. The CMOS compatible fabrication process, the simplified control over the number of quantum dots and the scalable geometry make such architecture exploitable for large scale fabrication of multiple spin-based qubits in circuital quantum information processing. - Highlights: • Charge sensing of tunable, by position and number, quantum dots is demonstrated. • A compact T-shaped design with five gates at a single metalization level is proposed. • The electrometer is a silicon-etched nanowire acting as a disorder tolerant MOSSET.
6j symbols for the modular double, quantum hyperbolic geometry, and supersymmetric gauge theories
Energy Technology Data Exchange (ETDEWEB)
Teschner, J.; Vartanov, G.S.
2012-02-15
We revisit the definition of the 6j-symbols from the modular double of U{sub q}(sl(2,R)), referred to as b-6j symbols. Our new results are (i) the identification of particularly natural normalization conditions, and (ii) new integral representations for this object. This is used to briefly discuss possible applications to quantum hyperbolic geometry, and to the study of certain supersymmetric gauge theories. We show, in particular, that the b-6j symbol has leading semiclassical asymptotics given by the volume of a non-ideal tetrahedron. We furthermore observe a close relation with the problem to quantize natural Darboux coordinates for moduli spaces of flat connections on Riemann surfaces related to the Fenchel-Nielsen coordinates. Our new integral representations finally indicate a possible interpretation of the b-6j symbols as partition functions of three-dimensional N=2 supersymmetric gauge theories. (orig.)
Courtney, Joseph M; Rienstra, Chad M
2016-08-01
We present a systematic study of dipolar double quantum (DQ) filtering in (13)C-labeled organic solids over a range of magic-angle spinning rates, using the SPC-n recoupling sequence element with a range of n symmetry values from 3 to 11. We find that efficient recoupling can be achieved for values n⩾7, provided that the (13)C nutation frequency is on the order of 100kHz or greater. The decoupling-field dependence was investigated and explicit heteronuclear decoupling interference conditions identified. The major determinant of DQ filtering efficiency is the decoupling interference between (13)C and (1)H fields. For (13)C nutation frequencies greater than 75kHz, optimal performance is observed without an applied (1)H field. At spinning rates exceeding 20kHz, symmetry conditions as low as n=3 were found to perform adequately. Copyright © 2016 Elsevier Inc. All rights reserved.
Phase locking of a semiconductor double-quantum-dot single-atom maser
Liu, Y.-Y.; Hartke, T. R.; Stehlik, J.; Petta, J. R.
2017-11-01
We experimentally study the phase stabilization of a semiconductor double-quantum-dot (DQD) single-atom maser by injection locking. A voltage-biased DQD serves as an electrically tunable microwave frequency gain medium. The statistics of the maser output field demonstrate that the maser can be phase locked to an external cavity drive, with a resulting phase noise L =-99 dBc/Hz at a frequency offset of 1.3 MHz. The injection locking range, and the phase of the maser output relative to the injection locking input tone are in good agreement with Adler's theory. Furthermore, the electrically tunable DQD energy level structure allows us to rapidly switch the gain medium on and off, resulting in an emission spectrum that resembles a frequency comb. The free running frequency comb linewidth is ≈8 kHz and can be improved to less than 1 Hz by operating the comb in the injection locked regime.
Phonon effects on the radiative recombination of excitons in double quantum dots
Karwat, Paweł; Sitek, Anna; Machnikowski, Paweł
2011-11-01
We study theoretically the radiative recombination of excitons in double quantum dots in the presence of carrier-phonon coupling. We show that the phonon-induced pure dephasing effects and transitions between the exciton states strongly modify the spontaneous emission process and make it sensitive to temperature, which may lead to nonmonotonic temperature dependence of the time-resolved luminescence. We show also that, under specific resonance conditions, the biexcitonic interband polarization can be coherently transferred to the excitonic one, leading to an extended lifetime of the total coherent polarization, which is reflected in the nonlinear optical spectrum of the system. We study the stability of this effect against phonon-induced decoherence.
6j symbols for the modular double, quantum hyperbolic geometry, and supersymmetric gauge theories
International Nuclear Information System (INIS)
Teschner, J.; Vartanov, G.S.
2012-02-01
We revisit the definition of the 6j-symbols from the modular double of U q (sl(2,R)), referred to as b-6j symbols. Our new results are (i) the identification of particularly natural normalization conditions, and (ii) new integral representations for this object. This is used to briefly discuss possible applications to quantum hyperbolic geometry, and to the study of certain supersymmetric gauge theories. We show, in particular, that the b-6j symbol has leading semiclassical asymptotics given by the volume of a non-ideal tetrahedron. We furthermore observe a close relation with the problem to quantize natural Darboux coordinates for moduli spaces of flat connections on Riemann surfaces related to the Fenchel-Nielsen coordinates. Our new integral representations finally indicate a possible interpretation of the b-6j symbols as partition functions of three-dimensional N=2 supersymmetric gauge theories. (orig.)
Transport through overlapping states in quantum dots and double dot molecules
International Nuclear Information System (INIS)
Berkovits, R.
2006-01-01
Full Text: We shall review the transport properties of interacting quantum dots with overlapping orbitals for which the orthodox Coulomb blockade picture no longer holds. We shall concentrate on he conductance through a serial double dot structure for which the inter-dot tunneling is stronger than the tunneling to the leads. When the dots are occupied by 1 or 3 electrons the usual Kondo peak is observed. For the case in which 2 electrons occupy the molecule a singlet is formed. Nevertheless, the conductance in that case has a constant non-zero value, and might even be equal to the maximum conductance of 2e 2 /h for certain values of the molecule parameters. We show that this is the result of the subtle interplay between the symmetric and anti-symmetric orbitals of the molecule caused by interactions and interference
Effects of Magnetic Field on the Valence Bond Property of the Double-Quantum-Dot Molecule
Institute of Scientific and Technical Information of China (English)
王立民; 罗莹; 马本堃
2002-01-01
The effects of the magnetic field on the valence bond property of the double-quantum-dot molecule are numerically studied by the finite element method and perturbation approach because of the absence of cylindrical symmetry in the horizontally coupled dots. The calculation results show that the energy value of the ground state changes differently from that of the first excited state with increasing magnetic field strength, and they cross under a certain magnetic field. The increasing magnetic field makes the covalent bond state change into an ionic bond state, which agrees qualitatively with experimental results and makes ionic bond states remain. The oscillator strength of transition between covalent bond states decreases distinctly with the increasing magnetic field strength, when the molecule is irradiated by polarized light. Such a phenomenon is possibly useful for actual applications.
Electron states and electron Raman scattering in semiconductor double cylindrical quantum well wire
International Nuclear Information System (INIS)
Munguía-Rodríguez, M; Riera, R; Betancourt-Riera, Ri; Betancourt-Riera, Re; Nieto Jalil, J M
2016-01-01
The differential cross section for an electron Raman scattering process in a semiconductor GaAs/AlGaAs double quantum well wire is calculated, and expressions for the electronic states are presented. The system is modeled by considering T = 0 K and also with a single parabolic conduction band, which is split into a subband system due to the confinement. The gain and differential cross-section for an electron Raman scattering process are obtained. In addition, the emission spectra for several scattering configurations are discussed, and interpretations of the singularities found in the spectra are given. The electron Raman scattering studied here can be used to provide direct information about the efficiency of the lasers. (paper)
Magnetospectroscopy of double HgTe/CdHgTe quantum wells
Energy Technology Data Exchange (ETDEWEB)
Bovkun, L. S.; Krishtopenko, S. S.; Ikonnikov, A. V., E-mail: antikon@ipmras.ru; Aleshkin, V. Ya.; Kadykov, A. M. [Russian Academy of Sciences, Institute for Physics of Microstructures (Russian Federation); Ruffenach, S.; Consejo, C.; Teppe, F.; Knap, W. [Laboratoire Charles Coulomb (L2C), UMR CNRS 5221 and UM (France); Orlita, M.; Piot, B.; Potemski, M. [Laboratoire National des Champs Magnetiques Intenses (LNCMI-G), CNRS-UJF-UPS-INSA (France); Mikhailov, N. N.; Dvoretskii, S. A. [Russian Academy of Sciences, Siberian Branch, Rzhanov Institute of Semiconductor Physics (Russian Federation); Gavrilenko, V. I. [Russian Academy of Sciences, Institute for Physics of Microstructures (Russian Federation)
2016-11-15
The magnetoabsorption spectra in double HgTe/CdHgTe quantum wells (QWs) with normal and inverted band structures are investigated. The Landau levels in symmetric QWs with a rectangular potential profile are calculated based on the Kane 8 × 8 model. The presence of a tunnel-transparent barrier is shown to lead to the splitting of states and “doubling” of the main magnetoabsorption lines. At a QW width close to the critical one the presence of band inversion and the emergence of a gapless band structure, similar to bilayer graphene, are shown for a structure with a single QW. The shift of magnetoabsorption lines as the carrier concentration changes due to the persistent photoconductivity effect associated with a change in the potential profile because of trap charge exchange is detected. This opens up the possibility for controlling topological phase transitions in such structures.
Pauli-spin blockade in a vertical double quantum dot holding two to five electrons
International Nuclear Information System (INIS)
Kodera, T; Arakawa, Y; Tarucha, S; Ono, K; Amaha, S
2009-01-01
We use a vertical double quantum dot (QD) to study spin blockade (SB) for the two-to five-electron states. SB observed for the two- and four-electron states is both assigned to Pauli exclusion with formation of a spin triplet state, and lifted by singlet-triplet admixing due to fluctuating nuclear field. SB observed for the five-electron state is caused by combined Pauli effect and Hund's rule. We observe a hysteretic behavior of the SB leakage current for up and down sweep of magnetic field, and argue that SB and its lifting by hyperfine interaction are subtle with the spin configuration and modified depending on the inter-dot detuning and number of electrons.
Detection of single electron spin resonance in a double quantum dota)
Koppens, F. H. L.; Buizert, C.; Vink, I. T.; Nowack, K. C.; Meunier, T.; Kouwenhoven, L. P.; Vandersypen, L. M. K.
2007-04-01
Spin-dependent transport measurements through a double quantum dot are a valuable tool for detecting both the coherent evolution of the spin state of a single electron, as well as the hybridization of two-electron spin states. In this article, we discuss a model that describes the transport cycle in this regime, including the effects of an oscillating magnetic field (causing electron spin resonance) and the effective nuclear fields on the spin states in the two dots. We numerically calculate the current flow due to the induced spin flips via electron spin resonance, and we study the detector efficiency for a range of parameters. The experimental data are compared with the model and we find a reasonable agreement.
International Nuclear Information System (INIS)
Reuscher, G.; Keim, M.; Fischer, F.; Waag, A.; Landwehr, G.
1995-01-01
We report the first observation of resonant tunneling through a CdTe/Cd 1-x Mg x Te double barrier, single quantum well heterostructure. Negative differential resistance is observable at temperatures below 230 K, exhibiting a peak to valley ratio of 3:1 at 4.2 K. (author)
Energy Technology Data Exchange (ETDEWEB)
Balagula, R. M.; Vinnichenko, M. Ya.; Makhov, I. S.; Sofronov, A. N., E-mail: sofronov@rphf.spbstu.ru; Firsov, D. A.; Vorobjev, L. E. [Peter the Great St. Petersburg Polytechnic University (Russian Federation)
2017-03-15
The modulation of polarized radiation by GaAs/AlGaAs structures with tunnel-coupled double quantum wells in a strong lateral electric field is studied. The spectra of the variation in the refractive index under a lateral electric field in the vicinity of the intersubband resonance are experimentally investigated.
Levy, Tal J; Rabani, Eran
2013-04-28
We study steady state transport through a double quantum dot array using the equation-of-motion approach to the nonequilibrium Green functions formalism. This popular technique relies on uncontrolled approximations to obtain a closure for a hierarchy of equations; however, its accuracy is questioned. We focus on 4 different closures, 2 of which were previously proposed in the context of the single quantum dot system (Anderson impurity model) and were extended to the double quantum dot array, and develop 2 new closures. Results for the differential conductance are compared to those attained by a master equation approach known to be accurate for weak system-leads couplings and high temperatures. While all 4 closures provide an accurate description of the Coulomb blockade and other transport properties in the single quantum dot case, they differ in the case of the double quantum dot array, where only one of the developed closures provides satisfactory results. This is rationalized by comparing the poles of the Green functions to the exact many-particle energy differences for the isolate system. Our analysis provides means to extend the equation-of-motion technique to more elaborate models of large bridge systems with strong electronic interactions.
Quantum Instantons and Quantum Chaos
Jirari, H.; Kröger, H.; Luo, X. Q.; Moriarty, K. J. M.; Rubin, S. G.
1999-01-01
Based on a closed form expression for the path integral of quantum transition amplitudes, we suggest rigorous definitions of both, quantum instantons and quantum chaos. As an example we compute the quantum instanton of the double well potential.
Waiting time distribution revealing the internal spin dynamics in a double quantum dot
Ptaszyński, Krzysztof
2017-07-01
Waiting time distribution and the zero-frequency full counting statistics of unidirectional electron transport through a double quantum dot molecule attached to spin-polarized leads are analyzed using the quantum master equation. The waiting time distribution exhibits a nontrivial dependence on the value of the exchange coupling between the dots and the gradient of the applied magnetic field, which reveals the oscillations between the spin states of the molecule. The zero-frequency full counting statistics, on the other hand, is independent of the aforementioned quantities, thus giving no insight into the internal dynamics. The fact that the waiting time distribution and the zero-frequency full counting statistics give a nonequivalent information is associated with two factors. Firstly, it can be explained by the sensitivity to different timescales of the dynamics of the system. Secondly, it is associated with the presence of the correlation between subsequent waiting times, which makes the renewal theory, relating the full counting statistics and the waiting time distribution, no longer applicable. The study highlights the particular usefulness of the waiting time distribution for the analysis of the internal dynamics of mesoscopic systems.
Mobility modulation in inverted delta doped coupled double quantum well structure
Energy Technology Data Exchange (ETDEWEB)
Sahoo, N. [Department of Electronic Science, Berhampur University, 760007, Odisha (India); Sahu, T., E-mail: tsahu_bu@rediffmail.com [Department of Electronics and Communication Engineering, National Institute of Science and Technology, Palur Hills, Berhampur 761008, Odisha (India)
2016-10-01
We have studied the modulation of electron mobility μ as a function of the electric field perpendicular to the interface plane F{sub p} in a GaAs/AlGaAs double quantum well structure near the resonance of subband states. The functional dependence of μ on F{sub p} exhibits a minimum near the anticrossing of subband states leading to an oscillatory behavior of μ. We show that the oscillatory enhancement of μ becomes more pronounced with increase in the difference between the doping concentrations in the side barriers. The oscillation of μ also increases by varying the widths of the two wells through shifting of the position of the middle barrier. It is interesting to show that the oscillation of μ is always larger when there is doping in barrier towards the substrate side compared to that of the surface side due to the difference in the influence of the interface roughness scattering potential. Further, broadening of the central barrier width increases the peaks of the oscillation of μ mostly due to the changes in the ionized impurity scattering potential. Our results can be utilized for the performance enhancement of quantum well field effect transistor devices.
Coupled-Double-Quantum-Dot Environmental Information Engines: A Numerical Analysis
Tanabe, Katsuaki
2016-06-01
We conduct numerical simulations for an autonomous information engine comprising a set of coupled double quantum dots using a simple model. The steady-state entropy production rate in each component, heat and electron transfer rates are calculated via the probability distribution of the four electronic states from the master transition-rate equations. We define an information-engine efficiency based on the entropy change of the reservoir, implicating power generators that employ the environmental order as a new energy resource. We acquire device-design principles, toward the realization of corresponding practical energy converters, including that (1) higher energy levels of the detector-side reservoir than those of the detector dot provide significantly higher work production rates by faster states' circulation, (2) the efficiency is strongly dependent on the relative temperatures of the detector and system sides and becomes high in a particular Coulomb-interaction strength region between the quantum dots, and (3) the efficiency depends little on the system dot's energy level relative to its reservoir but largely on the antisymmetric relative amplitudes of the electronic tunneling rates.
Thermodynamic Properties of a Double Ring-Shaped Quantum Dot at Low and High Temperatures
Khordad, R.; Sedehi, H. R. Rastegar
2018-02-01
In this work, we study thermodynamic properties of a GaAs double ring-shaped quantum dot under external magnetic and electric fields. To this end, we first solve the Schrödinger equation and obtain the energy levels and wave functions, analytically. Then, we calculate the entropy, heat capacity, average energy and magnetic susceptibility of the quantum dot in the presence of a magnetic field using the canonical ensemble approach. According to the results, it is found that the entropy is an increasing function of temperature. At low temperatures, the entropy increases monotonically with raising the temperature for all values of the magnetic fields and it is independent of the magnetic field. But, the entropy depends on the magnetic field at high temperatures. The entropy also decreases with increasing the magnetic field. The heat capacity and magnetic susceptibility show a peak structure. The heat capacity reduces with increasing the magnetic field at low temperatures. The magnetic susceptibility shows a transition between diamagnetic and paramagnetic below for T<4 K. The transition temperature depends on the magnetic field.
Rameez-ul-Islam; Ikram, Manzoor; Hasan Mujtaba, Abid; Abbas, Tasawar
2018-01-01
We propose an idea for symmetric measurements through the famous double slit experiment (DSE) in a new detection scenario. The interferometric setup is complemented here with quantum detectors that switch to an arbitrary superposition after interaction with the arms of the DSE. The envisioned schematics cover the full measurement range, i.e. from the weak to the strong projective situation with selectivity being a smoothly tunable open option, and suggests an alternative methodology for weak measurements based on information overlap from DSE paths. The results, though generally in agreement with the quantum paradigm, raise many questions over the nature of probabilities, the absurdity of the common language for phenomena’s description in the theory and the boundary separating the projective/non-projective measurements, and the related misconceived interpretations. Further, the results impose certain constraints over the hidden variable theories as well as on the repercussions of the weak measurements. Although described as a thought experiment, the proposal can equally be implemented experimentally under a prevailing research scenario.
Spin-orbit coupling and electric-dipole spin resonance in a nanowire double quantum dot.
Liu, Zhi-Hai; Li, Rui; Hu, Xuedong; You, J Q
2018-02-02
We study the electric-dipole transitions for a single electron in a double quantum dot located in a semiconductor nanowire. Enabled by spin-orbit coupling (SOC), electric-dipole spin resonance (EDSR) for such an electron can be generated via two mechanisms: the SOC-induced intradot pseudospin states mixing and the interdot spin-flipped tunneling. The EDSR frequency and strength are determined by these mechanisms together. For both mechanisms the electric-dipole transition rates are strongly dependent on the external magnetic field. Their competition can be revealed by increasing the magnetic field and/or the interdot distance for the double dot. To clarify whether the strong SOC significantly impact the electron state coherence, we also calculate relaxations from excited levels via phonon emission. We show that spin-flip relaxations can be effectively suppressed by the phonon bottleneck effect even at relatively low magnetic fields because of the very large g-factor of strong SOC materials such as InSb.
Charge confinements in CdSe-ZnSe symmetric double quantum wells
International Nuclear Information System (INIS)
Tit, Nacir; Obaidat, Ihab M
2008-01-01
The bound states in the (CdSe) N w (ZnSe) N b (CdSe) N w -ZnSe(001) symmetric double quantum wells are investigated versus the well width (N w ) and the barrier thickness (N b ). A calculation based on the sp 3 s * tight-binding method which includes the spin-orbit interactions is employed to calculate the bandgap energy, quantum-confinement energy, and band structures. The studied systems possess a vanishing valence-band offset (VBO = 0) in consistency with the well known common-anion rule, and a large conduction-band offset (CBO ≅ 1 eV), which plays an essential role in the confinement of electrons within the CdSe wells. The biaxial strain, on the other hand, plays another role in confining the holes at the interfaces (within the well regions) and thus enhancing the radiative efficiency. The induced-strain energy is estimated to be ∼35 meV. More importantly, the results show that, for a fixed barrier thickness, the double wells are able to confine a pair of bound states when they are very thin. By increasing the wells' width (N w ), further, a new pair of states from the conduction-band continuum falls into the wells every time N w hits a multiple of four monolayers (more specifically, for 4n w ≤4(n+1), the number of bound states is 2(n+1), where n is an integer). On the other hand, the barrier thickness (N b ) is shown to have no effect on the number of bound states, but it solely controls their well-to-well interactions. A critical barrier thickness to switch off these latter interactions is estimated to occur at about N crit b ≅ 9 (L crit b ≅ 25∼AA. Rules governing the variation of the quantum-confinement energy versus both barrier thickness (N b ) and well width (N w ) have been derived. Our theoretical results are also shown to have excellent agreement with the available experimental photoluminescence data
Optical detection of symmetric and antisymmetric states in double quantum wells at room temperature
Marchewka, M.; Sheregii, E. M.; Tralle, I.; Marcelli, A.; Piccinini, M.; Cebulski, J.
2009-09-01
We studied the optical reflectivity of a specially grown double quantum well (DQW) structure characterized by a rectangular shape and a high electron density at room temperature. Assuming that the QWs depth is known, reflectivity spectra in the mid-IR range allow to carry out the precise measurements of the SAS-gap values (the energy gap between the symmetric and anti-symmetric states) and the absolute energies of both symmetric and antisymmetric electron states. The results of our experiments are in favor of the existence of the SAS splitting in the DQWs at room temperature. Here we have shown that the SAS gap increases proportionally to the subband quantum number and the optical electron transitions between symmetric and antisymmetric states belonging to different subbands are allowed. These results were used for interpretation of the beating effect in the Shubnikov-de Haas (SdH) oscillations at low temperatures (0.6 and 4.2 K). The approach to the calculation of the Landau-levels energies for DQW structures developed earlier [D. Ploch , Phys. Rev. B 79, 195434 (2009)] is used for the analysis and interpretation of the experimental data related to the beating effect. We also argue that in order to explain the beating effect in the SdH oscillations, one should introduce two different quasi-Fermi levels characterizing the two electron subsystems regarding symmetry properties of their wave functions, symmetric and antisymmetric ones. These states are not mixed neither by electron-electron interaction nor probably by electron-phonon interaction.
International Nuclear Information System (INIS)
Chen Changyong; Liu Zongliang; Kang Shuai; Li Shaohua
2010-01-01
We introduce the double-Hamiltonian evolution technique approach to investigate the unconventional geometric quantum logical gate with dissipation under the model of many identical three-level atoms in a cavity, driven by a classical field. Our concrete calculation is made for the case of two atoms for the large-detuning interaction of the atoms with the cavity mode. The main advantage of our scheme is of eliminating the photon flutuation in the cavity mode during the gating. The corresponding analytical results will be helpful for experimental realization of speed geometric quantum logical gate in real cavities. (general)
Proton chemical shift tensors determined by 3D ultrafast MAS double-quantum NMR spectroscopy
International Nuclear Information System (INIS)
Zhang, Rongchun; Mroue, Kamal H.; Ramamoorthy, Ayyalusamy
2015-01-01
Proton NMR spectroscopy in the solid state has recently attracted much attention owing to the significant enhancement in spectral resolution afforded by the remarkable advances in ultrafast magic angle spinning (MAS) capabilities. In particular, proton chemical shift anisotropy (CSA) has become an important tool for obtaining specific insights into inter/intra-molecular hydrogen bonding. However, even at the highest currently feasible spinning frequencies (110–120 kHz), 1 H MAS NMR spectra of rigid solids still suffer from poor resolution and severe peak overlap caused by the strong 1 H– 1 H homonuclear dipolar couplings and narrow 1 H chemical shift (CS) ranges, which render it difficult to determine the CSA of specific proton sites in the standard CSA/single-quantum (SQ) chemical shift correlation experiment. Herein, we propose a three-dimensional (3D) 1 H double-quantum (DQ) chemical shift/CSA/SQ chemical shift correlation experiment to extract the CS tensors of proton sites whose signals are not well resolved along the single-quantum chemical shift dimension. As extracted from the 3D spectrum, the F1/F3 (DQ/SQ) projection provides valuable information about 1 H– 1 H proximities, which might also reveal the hydrogen-bonding connectivities. In addition, the F2/F3 (CSA/SQ) correlation spectrum, which is similar to the regular 2D CSA/SQ correlation experiment, yields chemical shift anisotropic line shapes at different isotropic chemical shifts. More importantly, since the F2/F1 (CSA/DQ) spectrum correlates the CSA with the DQ signal induced by two neighboring proton sites, the CSA spectrum sliced at a specific DQ chemical shift position contains the CSA information of two neighboring spins indicated by the DQ chemical shift. If these two spins have different CS tensors, both tensors can be extracted by numerical fitting. We believe that this robust and elegant single-channel proton-based 3D experiment provides useful atomistic-level structural and dynamical
Ahia, Chinedu Christian; Tile, Ngcali; Botha, Johannes R.; Olivier, E. J.
2018-04-01
The structural and photoluminescence (PL) characterization of InGaSb quantum well (QW) structures grown on GaSb substrate (100) using atmospheric pressure Metalorganic Vapor Phase Epitaxy (MOVPE) is presented. Both structures (single and double-InGaSb QWs) were inadvertently formed during an attempt to grow capped InSb/GaSb quantum dots (QDs). In this work, 10 K PL peak energies at 735 meV and 740 meV are suggested to be emissions from the single and double QWs, respectively. These lines exhibit red shifts, accompanied by a reduction in their full-widths at half-maximum (FWHM) as the excitation power decreases. The presence of a GaSb spacer in the double QW was found to increase the strength of the PL emission, which consequently gives rise to a reduced blue-shift and broadening of the PL emission line observed for the double QW with an increase in laser power, while the low thermal activation energy for the quenching of the PL from the double QW is attributed to the existence of threading dislocations, as seen in the bright field TEM image for this sample.
Directory of Open Access Journals (Sweden)
A. Stockklauser
2017-03-01
Full Text Available The strong coupling limit of cavity quantum electrodynamics (QED implies the capability of a matterlike quantum system to coherently transform an individual excitation into a single photon within a resonant structure. This not only enables essential processes required for quantum information processing but also allows for fundamental studies of matter-light interaction. In this work, we demonstrate strong coupling between the charge degree of freedom in a gate-defined GaAs double quantum dot (DQD and a frequency-tunable high impedance resonator realized using an array of superconducting quantum interference devices. In the resonant regime, we resolve the vacuum Rabi mode splitting of size 2g/2π=238 MHz at a resonator linewidth κ/2π=12 MHz and a DQD charge qubit decoherence rate of γ_{2}/2π=40 MHz extracted independently from microwave spectroscopy in the dispersive regime. Our measurements indicate a viable path towards using circuit-based cavity QED for quantum information processing in semiconductor nanostructures.
Bao, Jianfeng; Cui, Xiaohong; Huang, Yuqing; Zhong, Jianhui; Chen, Zhong
2015-08-01
High-resolution 1H magnetic resonance spectroscopy (MRS) is generally inaccessible in red bone marrow (RBM) tissues using conventional MRS techniques. This is because signal from these tissues suffers from severe inhomogeneity in the main static B0 field originated from the intrinsic honeycomb structures in trabecular bone. One way to reduce effects of B0 field inhomogeneity is by using the intermolecular double quantum coherence (iDQC) technique, which has been shown in other systems to obtain signals insensitive to B0 field inhomogeneity. In the present study, we employed an iDQC approach to enhance the spectral resolution of RBM. The feasibility and performance of this method for achieving high resolution MRS was verified by experiments on phantoms and pig vertebral bone samples. Unsaturated fatty acid peaks which overlap in the conventional MRS were well resolved and identified in the iDQC spectrum. Quantitative comparison of fractions of three types of fatty acids was performed between iDQC spectra on the in situ RMB and conventional MRS on the extracted fat from the same RBM. Observations of unsaturated fatty acids with iDQC MRS may provide valuable information and may hold potential in diagnosis of diseases such as obesity, diabetes, and leukemia.
Dynamical nuclear spin polarization induced by electronic current through double quantum dots
International Nuclear Information System (INIS)
Lopez-Monis, Carlos; Platero, Gloria; Inarrea, Jesus
2011-01-01
We analyse electron-spin relaxation in electronic transport through coherently coupled double quantum dots (DQDs) in the spin blockade regime. In particular, we focus on hyperfine (HF) interaction as the spin-relaxation mechanism. We pay special attention to the effect of the dynamical nuclear spin polarization induced by the electronic current on the nuclear environment. We discuss the behaviour of the electronic current and the induced nuclear spin polarization versus an external magnetic field for different HF coupling intensities and interdot tunnelling strengths. We take into account, for each magnetic field, all HF-mediated spin-relaxation processes coming from different opposite spin level approaches. We find that the current as a function of the external magnetic field shows a peak or a dip and that the transition from a current dip to a current peak behaviour is obtained by decreasing the HF coupling or by increasing the interdot tunnelling strength. We give a physical picture in terms of the interplay between the electrons tunnelling out of the DQD and the spin-flip processes due to the nuclear environment.
Full counting statistics in a serially coupled double quantum dot system with spin-orbit coupling
Wang, Qiang; Xue, Hai-Bin; Xie, Hai-Qing
2018-04-01
We study the full counting statistics of electron transport through a serially coupled double quantum dot (QD) system with spin-orbit coupling (SOC) weakly coupled to two electrodes. We demonstrate that the spin polarizations of the source and drain electrodes determine whether the shot noise maintains super-Poissonian distribution, and whether the sign transitions of the skewness from positive to negative values and of the kurtosis from negative to positive values take place. In particular, the interplay between the spin polarizations of the source and drain electrodes and the magnitude of the external magnetic field, can give rise to a gate-voltage-tunable strong negative differential conductance (NDC) and the shot noise in this NDC region is significantly enhanced. Importantly, for a given SOC parameter, the obvious variation of the high-order current cumulants as a function of the energy-level detuning in a certain range, especially the dip position of the Fano factor of the skewness can be used to qualitatively extract the information about the magnitude of the SOC.
Double Super-Exchange in Silicon Quantum Dots Connected by Short-Bridged Networks
Li, Huashan; Wu, Zhigang; Lusk, Mark
2013-03-01
Silicon quantum dots (QDs) with diameters in the range of 1-2 nm are attractive for photovoltaic applications. They absorb photons more readily, transport excitons with greater efficiency, and show greater promise in multiple-exciton generation and hot carrier collection paradigms. However, their high excitonic binding energy makes it difficult to dissociate excitons into separate charge carriers. One possible remedy is to create dot assemblies in which a second material creates a Type-II heterojunction with the dot so that exciton dissociation occurs locally. This talk will focus on such a Type-II heterojunction paradigm in which QDs are connected via covalently bonded, short-bridge molecules. For such interpenetrating networks of dots and molecules, our first principles computational investigation shows that it is possible to rapidly and efficiently separate electrons to QDs and holes to bridge units. The bridge network serves as an efficient mediator of electron superexchange between QDs while the dots themselves play the complimentary role of efficient hole superexchange mediators. Dissociation, photoluminescence and carrier transport rates will be presented for bridge networks of silicon QDs that exhibit such double superexchange. This material is based upon work supported by the Renewable Energy Materials Research Science and Engineering Center (REMRSEC) under Grant No. DMR-0820518 and Golden Energy Computing Organization (GECO).
Exciton behavior in GaAs/AlGaAs coupled double quantum wells with interface disorder
Energy Technology Data Exchange (ETDEWEB)
Lopes, E.M., E-mail: eldermantovani@yahoo.com.b [Departamento de Fisica, Universidade Estadual de Londrina, CP 6001, CEP 86051-970 Londrina, Parana (Brazil); Duarte, J.L.; Pocas, L.C.; Dias, I.F.L.; Laureto, E. [Departamento de Fisica, Universidade Estadual de Londrina, CP 6001, CEP 86051-970 Londrina, Parana (Brazil); Quivy, A.A.; Lamas, T.E. [Laboratorio de Novos Materiais Semicondutores, Instituto de Fisica, Universidade de Sao Paulo, CP 66318, CEP 05315-970 Sao Paulo (Brazil)
2010-03-15
In this work, we present a detailed study on the optical properties of two GaAs/Al{sub 0.35}Ga{sub 0.65}As coupled double quantum wells (CDQWs) with inter-well barriers of different thicknesses, by using photoluminescence (PL) spectroscopy. The two CDQWs were grown in a single sample, assuring very similar experimental conditions for measurements of both. The PL spectrum of each CDQW exhibits two recombination channels which can be accurately identified as the excitonic e{sub 1}-hh{sub 1} transitions originated from CDQWs of different effective dimensions. The PL spectra characteristics and the behavior of the emissions as a function of temperature and excitation power are interpreted in the scenario of the bimodal interface roughness model, taking into account the exciton migration between the two regions considered in this model and the difference in the potential fluctuation levels between those two regions. The details of the PL spectra behavior as a function of excitation power are explained in terms of the competition between the band gap renormalization (BGR) and the potential fluctuation effects. The results obtained for the two CDQWs, which have different degrees of potential fluctuation, are also compared and discussed.
SU(4) Kondo effect in double quantum dots with ferromagnetic leads
Weymann, Ireneusz; Chirla, Razvan; Trocha, Piotr; Moca, Cǎtǎlin Paşcu
2018-02-01
We investigate the spin-resolved transport properties, such as the linear conductance and the tunnel magnetoresistance, of a double quantum dot device attached to ferromagnetic leads and look for signatures of the SU (4 ) symmetry in the Kondo regime. We show that the transport behavior greatly depends on the magnetic configuration of the device, and the spin-SU(2) as well as the orbital and spin-SU(4) Kondo effects become generally suppressed when the magnetic configuration of the leads varies from the antiparallel to the parallel one. Furthermore, a finite spin polarization of the leads lifts the spin degeneracy and drives the system from the SU(4) to an orbital-SU(2) Kondo state. We analyze in detail the crossover and show that the Kondo temperature between the two fixed points has a nonmonotonic dependence on the degree of spin polarization of the leads. In terms of methods used, we characterize transport by using a combination of analytical and numerical renormalization group approaches.
Four-wave mixing in an asymmetric double quantum dot molecule
Kosionis, Spyridon G.
2018-06-01
The four-wave mixing (FWM) effect of a weak probe field, in an asymmetric semiconductor double quantum dot (QD) structure driven by a strong pump field is theoretically studied. Similarly to the case of examining several other nonlinear optical processes, the nonlinear differential equations of the density matrix elements are used, under the rotating wave approximation. By suitably tuning the intensity and the frequency of the pump field as well as by changing the value of the applied bias voltage, a procedure used to properly adjust the electron tunneling coupling, we control the FWM in the same way as several other nonlinear optical processes of the system. While in the weak electron tunneling regime, the impact of the pump field intensity on the FWM is proven to be of crucial importance, for even higher rates of the electron tunneling it is evident that the intensity of the pump field has only a slight impact on the form of the FWM spectrum. The number of the spectral peaks, depends on the relation between specific parameters of the system.
International Nuclear Information System (INIS)
Wang Zhigang; Zheng Zhiren; Yu Junhua
2007-01-01
The transient gain property of a weak probe field in an asymmetric semiconductor coupled double quantum well structure is reported. The transient process of the system, which is induced by the external coherent coupling field, shows the property of no inverse gain. We find that the transient behavior of the probe field can be tuned by the change of tunneling barrier. Both the amplitude of the transient gain and the frequency of the oscillation can be affected by the lifetime broadening
On the relation between the modular double of U{sub q}(sl(2,R)) and the quantum Teichmueller theory
Energy Technology Data Exchange (ETDEWEB)
Nidaiev, Iurii; Teschner, Joerg
2013-02-15
We exhibit direct relations between the modular double of U{sub q}(sl(2,R)) and the quantum Teichmueller theory. Explicit representations for the fusion- and braiding operations of the quantum Teichmueller theory are immediate consequences. Our results include a simplified derivation of the Clebsch-Gordan decomposition for the principal series of representation of the modular double of U{sub q}(sl(2,R)).
Photoluminescence spectra of n-doped double quantum wells in a parallel magnetic field
International Nuclear Information System (INIS)
Huang, D.; Lyo, S.K.
1999-01-01
We show that the photoluminescence (PL) line shapes from tunnel-split ground sublevels of n-doped thin double quantum wells (DQW close-quote s) are sensitively modulated by an in-plane magnetic field B parallel at low temperatures (T). The modulation is caused by the B parallel -induced distortion of the electronic structure. The latter arises from the relative shift of the energy-dispersion parabolas of the two quantum wells (QW close-quote s) in rvec k space, both in the conduction and valence bands, and formation of an anticrossing gap in the conduction band. Using a self-consistent density-functional theory, the PL spectra and the band-gap narrowing are calculated as a function of B parallel , T, and the homogeneous linewidths. The PL spectra from symmetric and asymmetric DQW close-quote s are found to show strikingly different behavior. In symmetric DQW close-quote s with a high density of electrons, two PL peaks are obtained at B parallel =0, representing the interband transitions between the pair of the upper (i.e., antisymmetric) levels and that of the lower (i.e., symmetric) levels of the ground doublets. As B parallel increases, the upper PL peak develops an N-type kink, namely a maximum followed by a minimum, and merges with the lower peak, which rises monotonically as a function of B parallel due to the diamagnetic energy. When the electron density is low, however, only a single PL peak, arising from the transitions between the lower levels, is obtained. In asymmetric DQW close-quote s, the PL spectra show mainly one dominant peak at all B parallel close-quote s. In this case, the holes are localized in one of the QW close-quote s at low T and recombine only with the electrons in the same QW. At high electron densities, the upper PL peak shows an N-type kink like in symmetric DQW close-quote s. However, the lower peak is absent at low B parallel close-quote s because it arises from the inter-QW transitions. Reasonable agreement is obtained with recent
Hayashi, Shohei; Yamashita, Tamotsu; Senzaki, Junji; Miyazato, Masaki; Ryo, Mina; Miyajima, Masaaki; Kato, Tomohisa; Yonezawa, Yoshiyuki; Kojima, Kazutoshi; Okumura, Hajime
2018-04-01
The origin of expanded single Shockley-type stacking faults in forward-current degradation of 4H-SiC p-i-n diodes was investigated by the stress-current test. At a stress-current density lower than 25 A cm-2, triangular stacking faults were formed from basal-plane dislocations in the epitaxial layer. At a stress-current density higher than 350 A cm-2, both triangular and long-zone-shaped stacking faults were formed from basal-plane dislocations that converted into threading edge dislocations near the interface between the epitaxial layer and the substrate. In addition, the conversion depth of basal-plane dislocations that expanded into the stacking fault was inside the substrate deeper than the interface. These results indicate that the conversion depth of basal-plane dislocations strongly affects the threshold stress-current density at which the expansion of stacking faults occurs.
A convergent iterative solution of the quantum double-well potential
International Nuclear Information System (INIS)
Friedberg, R.; Lee, T.D.; Zhao, W.Q.; Cimenser, A.
2001-01-01
We present a new convergent iterative solution for the two lowest quantum wave functions ψ ev and ψ od of the Hamiltonian with a quartic double-well potential V in one dimension. By starting from a trial function, which is by itself the exact lowest even or odd eigenstate of a different Hamiltonian with a modified potential V+δV, we construct the Green's function for the modified potential. The true wave functions, ψ ev or ψ od , then satisfy a linear inhomogeneous integral equation, in which the inhomogeneous term is the trial function, and the kernel is the product of the Green's function times the sum of δV, the potential difference, and the corresponding energy shift. By iterating this equation we obtain successive approximations to the true wave function; furthermore, the approximate energy shift is also adjusted at each iteration so that the approximate wave function is well behaved everywhere. We are able to prove that this iterative procedure converges for both the energy and the wave function at all x. The effectiveness of this iterative process clearly depends on how good the trial function is, or equivalently, how small the potential difference δV is. Although each iteration brings a correction smaller than the previous one by a factor proportional to the parameter that characterizes the smallness of δV, it is not a power series expansion in the parameter. The exact tunneling information of the modified potential is, of course, contained in the Green's function; by adjusting the kernel of the integral equation via the energy shift at each iteration, we bring enough of this information into the calculation so that each approximate wave function is exponentially tuned. This is the underlying reason why the present method converges, while the usual power series expansion does not
Aziz-Aghchegala, V. L.; Mughnetsyan, V. N.; Kirakosyan, A. A.
2018-02-01
The effect of interdiffusion and magnetic field on confined states of electron and heavy hole as well as on interband absorption spectrum in a Ga1-xAlxAs/GaAs Gaussian-shaped double quantum ring are investigated. It is shown that both interdiffusion and magnetic field lead to the change of the charge carriers' quantum states arrangement by their energies. The oscillating behavior of the electron ground state energy as a function of magnetic field induction gradually disappears with the increase of diffusion parameter due to the enhanced tunneling of electron to the central region of the ring. For the heavy hole the ground state energy oscillations are not observable in the region of the values of magnetic field induction B = 0 - 10 T . For considered transitions both the magnetic field and the interdiffusion lead to a blue-shift of the absorption spectrum and to decreasing of the absorption intensity. The obtained results indicate on the opportunity of purposeful manipulation of energy states and absorption spectrum of a Gaussian-shaped double quantum ring by means of the post growth annealing and the external magnetic field.
On the donor states in double InxGa1−xN/InyGa1−yN/GaN staggered quantum wells
International Nuclear Information System (INIS)
Yıldırım, Hasan; Aslan, Bulent
2013-01-01
We have calculated the binding energies of the donor states, 1s and 2p ± , with respect to the lowest sub-band energy in a double quantum well composed of wurtzite InGaN staggered quantum wells with GaN barriers. All the energies and the wavefunctions were calculated by applying the variational methods. We have found that the binding energies of donors placed in the right quantum well are larger and independent of the middle barrier width of up to 40 Å. This is because of the strong built-in electric field which brings more confinement to the donor wavefunctions in the right staggered quantum well. The binding energies are found to be strong functions of the donor position in the double quantum well system which is the consequence of the large asymmetry introduced by the built-in electric field. (paper)
Directory of Open Access Journals (Sweden)
R. K. Nayak
2015-11-01
Full Text Available We show that sharp nonmonotic variation of low temperature electron mobility μ can be achieved in GaAs/AlxGa1-xAs barrier delta-doped double quantum well structure due to quantum mechanical transfer of subband electron wave functions within the wells. We vary the potential profile of the coupled structure as a function of the doping concentration in order to bring the subbands into resonance such that the subband energy levels anticross and the eigen states of the coupled structure equally share both the wells thereby giving rise to a dip in mobility. When the wells are of equal widths, the dip in mobility occurs under symmetric doping of the side barriers. In case of unequal well widths, the resonance can be obtained by suitable asymmetric variation of the doping concentrations. The dip in mobility becomes sharp and also the wavy nature of mobility takes a rectangular shape by increasing the barrier width. We show that the dip in mobility at resonance is governed by the interface roughness scattering through step like changes in the subband mobilities. It is also gratifying to show that the drop in mobility at the onset of occupation of second subband is substantially supressed through the quantum mechanical transfer of subband wave functions between the wells. Our results can be utilized for performance enhancement of coupled quantum well devices.
Energy Technology Data Exchange (ETDEWEB)
Ullah, S.; Gusev, G. M.; Hernandez, F. G. G., E-mail: felixggh@if.usp.br [Instituto de Física, Universidade de São Paulo, Caixa Postal 66318, CEP 05315-970 São Paulo, SP (Brazil); Bakarov, A. K. [Institute of Semiconductor Physics and Novosibirsk State University, Novosibirsk 630090 (Russian Federation)
2016-06-07
We investigated the spin coherence of high-mobility two-dimensional electron gases confined in multilayer GaAs quantum wells. The dynamics of the spin polarization was optically studied using pump-probe techniques: time-resolved Kerr rotation and resonant spin amplification. For double and triple quantum wells doped beyond the metal-to-insulator transition, the spin-orbit interaction was tailored by the sample parameters of structural symmetry (Rashba constant), width, and electron density (Dresselhaus linear and cubic constants) which allow us to attain long dephasing times in the nanoseconds range. The determination of the scales, namely, transport scattering time, single-electron scattering time, electron-electron scattering time, and spin polarization decay time further supports the possibility of using n-doped multilayer systems for developing spintronic devices.
Singh, Madhav K.; Jha, Pradeep K.; Bhattacherjee, Aranya B.
2017-09-01
In this article, we study the spin and tunneling dynamics as a function of magnetic field in a one-dimensional GaAs double quantum dot with both the Dresselhaus and Rashba spin-orbit coupling. In particular, we consider different spatial widths for the spin-up and spin-down electronic states. We find that the spin dynamics is a superposition of slow as well as fast Rabi oscillations. It is found that the Rashba interaction strength as well as the external magnetic field strongly modifies the slow Rabi oscillations which is particularly useful for implementing solid state selective spin transport device.
Energy Technology Data Exchange (ETDEWEB)
Amaha, S., E-mail: s-amaha@riken.jp [Quantum Spin Information Project, Japan Science and Technology Agency, ICORP, 3-1, Morinosato Wakamiya, Atsugi-shi, Kanagawa 243-0198 (Japan); Quantum Functional System Research Group, RIKEN Center for Emergent Matter Science, RIKEN, 3-1 Wako-shi, Saitama 351-0198 (Japan); Hatano, T. [Quantum Spin Information Project, Japan Science and Technology Agency, ICORP, 3-1, Morinosato Wakamiya, Atsugi-shi, Kanagawa 243-0198 (Japan); Department of Physics, Tohoku University, Sendai-shi, Miyagi 980-8578 (Japan); Tarucha, S. [Quantum Spin Information Project, Japan Science and Technology Agency, ICORP, 3-1, Morinosato Wakamiya, Atsugi-shi, Kanagawa 243-0198 (Japan); Quantum Functional System Research Group, RIKEN Center for Emergent Matter Science, RIKEN, 3-1 Wako-shi, Saitama 351-0198 (Japan); Department of Applied Physics, School of Engineering, University of Tokyo, 7-3-1, Hongo, Bunkyo-ku, Tokyo 113-8656 (Japan); Gupta, J. A.; Austing, D. G. [National Research Council of Canada, M50, Montreal Road, Ottawa, Ontario K1A 0R6 (Canada)
2015-04-27
We investigate nuclear spin pumping with five-electron quadruplet spin states in a spin-blockaded weakly coupled vertical double quantum dot device. Two types of hysteretic steps in the leakage current are observed on sweeping the magnetic field and are associated with bidirectional polarization of nuclear spin. Properties of the steps are understood in terms of bias-voltage-dependent conditions for the mixing of quadruplet and doublet spin states by the hyperfine interaction. The hysteretic steps vanish when up- and down-nuclear spin pumping processes are in close competition.
Karaaslan, Y.; Gisi, B.; Sakiroglu, S.; Kasapoglu, E.; Sari, H.; Sokmen, I.
2018-02-01
We study the influence of electric field on the electronic energy band structure, zero-temperature ballistic conductivity and optical properties of double quantum wire. System described by double-well anharmonic confinement potential is exposed to a perpendicular magnetic field and Rashba and Dresselhaus spin-orbit interactions. Numerical results show up that the combined effects of internal and external agents cause the formation of crossing, anticrossing, camel-back/anomaly structures and the lateral, downward/upward shifts in the energy dispersion. The anomalies in the energy subbands give rise to the oscillation patterns in the ballistic conductance, and the energy shifts bring about the shift in the peak positions of optical absorption coefficients and refractive index changes.
International Nuclear Information System (INIS)
Xiong, Lun; Yi, Lin
2014-01-01
Thermoelectric effects, including Seebeck coefficient (S), thermal conductance (κ), and figure of merit (ZT), in a laterally coupled double-quantum-dot (DQD) chain with two external nonmagnetic contacts are investigated theoretically by the nonequilibrium Green's function formalism. In this system, the DQD chain between two contacts forms a main channel for thermal electrons transporting, and each QD in the main chain couples laterally to a dangling one. The numerical calculations show that the Coulomb interactions not only lead to the splitting of the asymmetrical double-peak structure of the Seebeck coefficient, but also make the thermal spectrum show a strong violation of the Wiedemann–Franz law, leading to a colossal enhancement in ZT. These results indicate that the coupled DQD chain has potential applications in the thermoelectric devices with high thermal efficiency.
International Nuclear Information System (INIS)
Wang Bo; Ma Zhongshui; Zhang, C
2012-01-01
We demonstrate that the trigonal warping observed in bilayer graphene is doubled in the presence of Rashba spin-orbit (RSO) coupling, i.e. the Dirac points along the three-fold symmetry axis are doubled. There are now seven Dirac points. Furthermore, the RSO interaction breaks the electron-hole symmetry of the magnetic band structure. The most intriguing feature is that the step of the quantum Hall plateau at zero energy is four times that at finite energy. The number of Dirac points and the zero energy Hall step are only determined by the existence of RSO coupling, but are independent of the strength of the coupling. The robustness of these phenomena suggests equivalence between the RSO coupling and the topological effect in bilayer coupling.
Christopher, Heike; Kovalchuk, Evgeny V; Wenzel, Hans; Bugge, Frank; Weyers, Markus; Wicht, Andreas; Peters, Achim; Tränkle, Günther
2017-07-01
We present a compact, mode-locked diode laser system designed to emit a frequency comb in the wavelength range around 780 nm. We compare the mode-locking performance of symmetric and asymmetric double quantum well ridge-waveguide diode laser chips in an extended-cavity diode laser configuration. By reverse biasing a short section of the diode laser chip, passive mode-locking at 3.4 GHz is achieved. Employing an asymmetric double quantum well allows for generation of a mode-locked optical spectrum spanning more than 15 nm (full width at -20 dB) while the symmetric double quantum well device only provides a bandwidth of ∼2.7 nm (full width at -20 dB). Analysis of the RF noise characteristics of the pulse repetition rate shows an RF linewidth of about 7 kHz (full width at half-maximum) and of at most 530 Hz (full width at half-maximum) for the asymmetric and symmetric double quantum well devices, respectively. Investigation of the frequency noise power spectral density at the pulse repetition rate shows a white noise floor of approximately 2100 Hz 2 /Hz and of at most 170 Hz 2 /Hz for the diode laser employing the asymmetric and symmetric double quantum well structures, respectively. The pulse width is less than 10 ps for both devices.
Two-electron states in double quantum dot in direct electric field
International Nuclear Information System (INIS)
Burdov, V.A.
2001-01-01
One determined analytically the wave functions of stationary states and the spectrum of two-electron system in symmetric binary quantum point. It is shown that in the normal state at the absence of external electric field the electrons due to the Coulomb blockade can not be collectively in one quantum point. In the external electric field the situation changes. When a certain critical value of field intensity is reached the probability of detection of both electrons in one quantum point by a jump increases from zero up to 1 [ru
Chan, GuoXuan; Wang, Xin
2018-04-01
We consider two typical approximations that are used in the microscopic calculations of double-quantum dot spin qubits, namely, the Heitler-London (HL) and the Hund-Mulliken (HM) approximations, which use linear combinations of Fock-Darwin states to approximate the two-electron states under the double-well confinement potential. We compared these results to a case in which the solution to a one-dimensional Schr¨odinger equation was exactly known and found that typical microscopic calculations based on Fock-Darwin states substantially underestimate the value of the exchange interaction, which is the key parameter that controls the quantum dot spin qubits. This underestimation originates from the lack of tunneling of Fock-Darwin states, which is accurate only in the case with a single potential well. Our results suggest that the accuracies of the current two-dimensional molecular- orbit-theoretical calculations based on Fock-Darwin states should be revisited since underestimation could only deteriorate in dimensions that are higher than one.
Rochette, Sophie; Ten Eyck, Gregory A.; Pluym, Tammy; Lilly, Michael P.; Carroll, Malcolm S.; Pioro-Ladrière, Michel
2015-03-01
Silicon quantum dots are promising candidates for quantum information processing as spin qubits with long coherence time. We present electrical transport measurements on a silicon metal-oxide-semiconductor (MOS) double quantum dot (DQD). First, Coulomb diamonds measurements demonstrate the one-electron regime at a relatively high temperature of 1.5 K. Then, the 8 mK stability diagram shows Pauli spin blockade with a large singlet-triplet separation of approximatively 0.40 meV, pointing towards a strong lifting of the valley degeneracy. Finally, numerical simulations indicate that by integrating a micro-magnet to those devices, we could achieve fast spin rotations of the order of 30 ns. Those results are part of the recent body of work demonstrating the potential of Si MOS DQD as reliable and long-lived spin qubits that could be ultimately integrated into modern electronic facilities. Sandia National Laboratories is a multi-program laboratory managed and operated by Sandia Corporation, a wholly owned subsidiary of Lockheed Martin Corporation, for the U.S. DOE's National Nuclear Security Administration under Contract DE-AC04-94AL85000.
International Nuclear Information System (INIS)
Schönhöbel, A.M.; Girón-Sedas, J.A.; Porras-Montenegro, N.
2014-01-01
We have calculated exactly the energy of electron quasistationary states in GaAs–(Ga,Al)As single and double quantum wells under the action of applied electric field and hydrostatic pressure by using Enderlein's method to solve the Schrödinger equation. Numerical results were obtained by means of the density of states as a function of the applied electric field, hydrostatic pressure, Al concentration and the structure geometry as well. We found two regions very well differentiated in energy; for lower values there are quasistationary states and for higher, fast oscillations. The quasistationary ground and excited energy states diminish with the well width and the applied electric field, and increase with the confinement potential and the width of the central barrier in the double quantum well. In the latter structure we observed the anti-crossing between the first and second quasistationary energy levels, phenomena which certainly depend on the central barrier width. Otherwise, in the region of fast oscillations, the period of Franz–Keldysh oscillation type in single quantum well and double quantum well increases with the applied electric field and the number of nodes augments with the well width. Also, we found that the increase of the central barrier height in the double quantum well diminishes the number of nodes, while the applied hydrostatic pressure changes the length of pulsations in both structures.
Time-dependent resonant tunnelling for parallel-coupled double quantum dots
International Nuclear Information System (INIS)
Dong Bing; Djuric, Ivana; Cui, H L; Lei, X L
2004-01-01
We derive the quantum rate equations for an Aharonov-Bohm interferometer with two vertically coupled quantum dots embedded in each of two arms by means of the nonequilibrium Green function in the sequential tunnelling regime. Based on these equations, we investigate time-dependent resonant tunnelling under a small amplitude irradiation and find that the resonant photon-assisted tunnelling peaks in photocurrent demonstrate a combination behaviour of Fano and Lorentzian resonances due to the interference effect between the two pathways in this parallel configuration, which is controllable by threading the magnetic flux inside this device
Wang, Fang-Hsing; Kuo, Hsin-Hui; Yang, Cheng-Fu; Liu, Min-Chu
2014-01-01
In this study, silicon nitride (SiNx) thin films were deposited on polyimide (PI) substrates as barrier layers by a plasma enhanced chemical vapor deposition (PECVD) system. The gallium-doped zinc oxide (GZO) thin films were deposited on PI and SiNx/PI substrates at room temperature (RT), 100 and 200 °C by radio frequency (RF) magnetron sputtering. The thicknesses of the GZO and SiNx thin films were controlled at around 160 ± 12 nm and 150 ± 10 nm, respectively. The optimal deposition parameters for the SiNx thin films were a working pressure of 800 × 10−3 Torr, a deposition power of 20 W, a deposition temperature of 200 °C, and gas flowing rates of SiH4 = 20 sccm and NH3 = 210 sccm, respectively. For the GZO/PI and GZO-SiNx/PI structures we had found that the GZO thin films deposited at 100 and 200 °C had higher crystallinity, higher electron mobility, larger carrier concentration, smaller resistivity, and higher optical transmittance ratio. For that, the GZO thin films deposited at 100 and 200 °C on PI and SiNx/PI substrates with thickness of ~000 nm were used to fabricate p-i-n hydrogenated amorphous silicon (α-Si) thin film solar cells. 0.5% HCl solution was used to etch the surfaces of the GZO/PI and GZO-SiNx/PI substrates. Finally, PECVD system was used to deposit α-Si thin film onto the etched surfaces of the GZO/PI and GZO-SiNx/PI substrates to fabricate α-Si thin film solar cells, and the solar cells’ properties were also investigated. We had found that substrates to get the optimally solar cells’ efficiency were 200 °C-deposited GZO-SiNx/PI. PMID:28788494
Directory of Open Access Journals (Sweden)
Fang-Hsing Wang
2014-02-01
Full Text Available In this study, silicon nitride (SiNx thin films were deposited on polyimide (PI substrates as barrier layers by a plasma enhanced chemical vapor deposition (PECVD system. The gallium-doped zinc oxide (GZO thin films were deposited on PI and SiNx/PI substrates at room temperature (RT, 100 and 200 °C by radio frequency (RF magnetron sputtering. The thicknesses of the GZO and SiNx thin films were controlled at around 160 ± 12 nm and 150 ± 10 nm, respectively. The optimal deposition parameters for the SiNx thin films were a working pressure of 800 × 10−3 Torr, a deposition power of 20 W, a deposition temperature of 200 °C, and gas flowing rates of SiH4 = 20 sccm and NH3 = 210 sccm, respectively. For the GZO/PI and GZO-SiNx/PI structures we had found that the GZO thin films deposited at 100 and 200 °C had higher crystallinity, higher electron mobility, larger carrier concentration, smaller resistivity, and higher optical transmittance ratio. For that, the GZO thin films deposited at 100 and 200 °C on PI and SiNx/PI substrates with thickness of ~1000 nm were used to fabricate p-i-n hydrogenated amorphous silicon (α-Si thin film solar cells. 0.5% HCl solution was used to etch the surfaces of the GZO/PI and GZO-SiNx/PI substrates. Finally, PECVD system was used to deposit α-Si thin film onto the etched surfaces of the GZO/PI and GZO-SiNx/PI substrates to fabricate α-Si thin film solar cells, and the solar cells’ properties were also investigated. We had found that substrates to get the optimally solar cells’ efficiency were 200 °C-deposited GZO-SiNx/PI.
Nuclear spin dynamics in double quantum dots : Fixed points, transients, and intermittency
Rudner, M.S.; Koppens, F.H.L.; Folk, J.A.; Vandersypen, L.M.K.; Levitov, L.S.
2011-01-01
Transport through spin-blockaded quantum dots provides a means for electrical control and detection of nuclear spin dynamics in the host material. Although such experiments have become increasingly popular in recent years, interpretation of their results in terms of the underlying nuclear spin
Macroscopic quantum tunneling of a Bose-Einstein condensate through double Gaussian barriers
Maeda, Kenji; Urban, Gregor; Weidemüller, Matthias; Carr, Lincoln D.
2015-05-01
Macroscopic quantum tunneling is one of the great manifestations of quantum physics, not only showing passage through a potential barrier but also emerging in a many-body wave function. We study a quasi-1D Bose-Einstein condensate of Lithium, confined by two Gaussian barriers, and show that in an experimentally realistic potential tens of thousands of atoms tunnel on time scales of 10 to 100 ms. Using a combination of variational and WKB approximations based on the Gross-Pitaevskii or nonlinear Schrödinger equation, we show that many unusual tunneling features appear due to the nonlinearity, including the number of trapped atoms exhibiting non-exponential decay, severe distortion of the barriers by the mean field, and even formation of a triple barrier in certain regimes. In the first 10ms, nonlinear many-body effects make the tunneling rates significantly larger than background loss rates, from 10 to 70 Hz. Thus we conclude that macroscopic quantum tunneling can be observed on experimental time scales. Funded by NSF, AFOSR, the Alexander von Humboldt foundation, and the Heidelberg Center for Quantum Dynamics.
Transmission spectrum of a double quantum-dot-nanocavity system in photonic crystals
International Nuclear Information System (INIS)
Qian Jun; Jin Shiqi; Gong Shangqing; Qian Yong; Feng Xunli
2008-01-01
We investigate the optical transmission properties of a combined system which consists of two quantum-dot-nanocavity subsystems indirectly coupled to a waveguide in a planar photonic crystal. A Mollow-like triplet and the growth of sidebands are found, reflecting intrinsic optical responses in the complex microstructure
International Nuclear Information System (INIS)
Nishibayashi, K.; Aoshima, I.; Souma, I.; Murayama, A.; Oka, Y.
2006-01-01
Dynamics of spin injection has been investigated in a double quantum well (DQW) composed of a diluted magnetic semiconductor by the pump-probe transient absorption spectroscopy in magnetic field. The DQW consists of a non-magnetic well (NMW) of CdTe and a magnetic well (MW) of Cd 0.92 Mn 0.08 Te. The MW shows a transient absorption saturation in the exciton band for more than 200 ps after the optical pumping, while the exciton photoluminescence does not arise from the MW. In the NMW, the circular polarization degree of the transient absorption saturation shows an increase with increasing time. The results are interpreted by the individual tunneling of spin-polarized electrons and holes from the MW to the NMW with different tunneling times. Depolarization processes of the carrier spins in the MW and the NMW are also discussed
Highly strained InAlP/InGaAs-based coupled double quantum wells on InP substrates
Gozu, Shin-ichiro; Mozume, Teruo
2018-05-01
InAlP/InGaAs based coupled double quantum wells (CDQWs) are proposed for optelectronic devices utilizing intersubband transitions. The aim of the proposed CDQW structure was to reduce the Al volume as compared with that in InGaAs/AlAsSb(AlAs/InAlAs) based CDQWs. By careful consideration of the band gap energy as well as conduction band offset and lattice constants for III–V materials, highly strained InAlP was chosen as the barrier material. With the appropriate CDQW structure and under the optimized growth conditions, proposed CDQWs exhibited clear X-ray diffraction satellite peaks, and almost identical optical absorption spectrum as compared with the InGaAs/AlAs/InAlAs CDQWs.
Phase Diagram of the Bose Condensation of Interwell Excitons in GaAs/AlGaAs Double Quantum Wells
DEFF Research Database (Denmark)
Dremin, A. A.; Timofeev, V. B.; Larionov, A. V.
2002-01-01
The luminescence of interwell excitons in GaAs/AlGaAs double quantum wells (n–i–n heterostructures) with large-scale fluctuations of random potential in the heteroboundary planes was studied at low temperatures down to 0.5 K. The properties of excitons whose photoexcited electron and hole...... was coated with a metal mask containing special openings (windows) of a micron size or smaller. Both photoexcitation and observation of luminescence were performed through these windows by the fiber optic technique. At low pumping powers, the interwell excitons were strongly localized because of the residual...... charged impurities, and the corresponding photoluminescence line was nonuniformly broadened. As the laser excitation power increased, a narrow line due to delocalized excitons arose in a threshold-like manner, after which its intensity rapidly increased with growing pumping and the line itself narrowed...
Near-infrared intersubband transitions in InGaAs-AlAs-InAlAs double quantum wells
International Nuclear Information System (INIS)
Semtsiv, M.P.; Ziegler, M.; Masselink, W.T.; Georgiev, N.; Dekorsy, T.; Helm, M.
2005-01-01
Intersubband optical transitions at short wavelengths in strain-compensated In 0.70 Ga 0.30 As--AlAs double quantum wells are investigated by means of mid-infrared absorption. Trade-offs between achieving a high transition energy and a large oscillator strength of the two highest-energy intersubband transitions using our strain-compensation approach are analyzed as a function of the widths of the two wells. Two design strategies leading to relatively strong intersubband optical transitions at 800 meV, 1.55 μm, are described and the corresponding structures grown using gas-source molecular-beam epitaxy on (001)InP are investigated. The strongest intersubband transitions obtained experimentally are generally between 300 and 600 meV, 2-4 μm. Significant oscillator strength, however, also extends out to 800 meV, 1.55 μm
Phase diagram of a two-dimensional liquid in GaAs/AlxGa1-xAs biased double quantum wells
DEFF Research Database (Denmark)
Timofeev, V. B.; Larionov, A. V.; Alessi, M. G.
2000-01-01
Photoluminescence (PL) and PL excitation (PLE) measurements have been performed in GaAs/AlxGa1-xAs biased double quantum well heterostructures. The recombination of electrons, e, with holes, h, located in the same or in two adjacent wells, has been investigated for different exciting power...
Energy Technology Data Exchange (ETDEWEB)
Reuscher, G.; Keim, M.; Fischer, F.; Waag, A.; Landwehr, G. [Physikalishes Institut der Universitaet Wuerzburg am Hubland, Wuerzburg (Germany)
1995-12-31
We report the first observation of resonant tunneling through a CdTe/Cd{sub 1-x}Mg{sub x}Te double barrier, single quantum well heterostructure. Negative differential resistance is observable at temperatures below 230 K, exhibiting a peak to valley ratio of 3:1 at 4.2 K. (author). 16 refs, 2 figs.
International Nuclear Information System (INIS)
Eslami, Leila; Esmaeilzadeh, Mahdi
2014-01-01
Spin-dependent electron transport in an open double quantum ring, when each ring is made up of four quantum dots and threaded by a magnetic flux, is studied. Two independent and tunable gate voltages are applied to induce Rashba spin-orbit effect in the quantum rings. Using non-equilibrium Green's function formalism, we study the effects of electron-electron interaction on spin-dependent electron transport and show that although the electron-electron interaction induces an energy gap, it has no considerable effect when the bias voltage is sufficiently high. We also show that the double quantum ring can operate as a spin-filter for both spin up and spin down electrons. The spin-polarization of transmitted electrons can be tuned from −1 (pure spin-down current) to +1 (pure spin-up current) by changing the magnetic flux and/or the gates voltage. Also, the double quantum ring can act as AND and NOR gates when the system parameters such as Rashba coefficient are properly adjusted
Xifang, Chen; Wenxia, Zhang; Qianjin, Wang; Jiyang, Fan
Carbon quantum dots (CQDs) have attracted great attention in the past few years due to their low cytotoxicity, exploited various synthesis methods, unexampled abundance of raw materials on earth, and robust near-infrared to near-UV luminescence. Carbon nanoparticles have applications in biological labeling, delivery of drugs and biological molecules into cells, and light emitting diodes and lasing. CQDs generally exist as nanodiamonds or graphite quantum dots according to previous research reports. In this study, we report the first synthesis of the third-allotrope CQDs through carbonization of sucrose and study their luminescence properties. These CQDs have a body-centered cubic structure and each lattice point is composed of eight atoms which form a sub-cube (so called C8 crystal structure). High-resolution transmission electron microscopy and X-ray diffraction confirm the C8 structure of the synthesized carbon nanocrystallites with an average size of 2 nm. The C8 CQDs exhibit double-band luminescence with two peaks centered at around 432 and 520 nm. The study based on the photoluminescence, UV-Vis absorption, Fourier-transform infrared, and X-ray photoelectron spectroscopies reveals that the green emission originates from the C=O related surface defect.
International Nuclear Information System (INIS)
Jiang Xiang-Wei; Li Shu-Shen
2012-01-01
By using the linear combination of bulk band (LCBB) method incorporated with the top of the barrier splitting (TBS) model, we present a comprehensive study on the quantum confinement effects and the source-to-drain tunneling in the ultra-scaled double-gate (DG) metal—oxide—semiconductor field-effect transistors (MOSFETs). A critical body thickness value of 5 nm is found, below which severe valley splittings among different X valleys for the occupied charge density and the current contributions occur in ultra-thin silicon body structures. It is also found that the tunneling current could be nearly 100% with an ultra-scaled channel length. Different from the previous simulation results, it is found that the source-to-drain tunneling could be effectively suppressed in the ultra-thin body thickness (2.0 nm and below) by the quantum confinement and the tunneling could be suppressed down to below 5% when the channel length approaches 16 nm regardless of the body thickness. (condensed matter: electronic structure, electrical, magnetic, and optical properties)
Generation of vector beams using a double-wedge depolarizer: Non-quantum entanglement
Samlan, C. T.; Viswanathan, Nirmal K.
2016-07-01
Propagation of horizontally polarized Gaussian beam through a double-wedge depolarizer generates vector beams with spatially varying state of polarization. Jones calculus is used to show that such beams are maximally nonseparable on the basis of even (Gaussian)-odd (Hermite-Gaussian) mode parity and horizontal-vertical polarization state. The maximum nonseparability in the two degrees of freedom of the vector beam at the double wedge depolarizer output is verified experimentally using a modified Sagnac interferometer and linear analyser projected interferograms to measure the concurrence 0.94±0.002 and violation of Clauser-Horne-Shimony-Holt form of Bell-like inequality 2.704±0.024. The investigation is carried out in the context of the use of vector beams for metrological applications.
In-plane magnetic field-dependent magnetoresistance of gated asymmetric double quantum wells
Czech Academy of Sciences Publication Activity Database
Krupko, Yuriy; Smrčka, Ludvík; Vašek, Petr; Svoboda, Pavel; Cukr, Miroslav; Jansen, L.
2004-01-01
Roč. 22, - (2004), s. 44-47 ISSN 1386-9477. [International Conference on Electronic Properties of Two-Dimensional Systems /15./. Nara, 14.07.2003-18.07.2003] R&D Projects: GA ČR GA202/01/0754 Institutional research plan: CEZ:AV0Z1010914 Keywords : double - layer two-dimensional electron system * magnetotransport * gate voltage Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 0.898, year: 2004
Interlayer Hall effect in double quantum wells subject to in-plane magnetic fields
Czech Academy of Sciences Publication Activity Database
Kolorenč, Jindřich; Smrčka, Ludvík; Středa, Pavel
2002-01-01
Roč. 66, č. 8 (2002), s. 085301-1 - 085301-7 ISSN 0163-1829 R&D Projects: GA ČR GA202/01/0754; GA ČR GA202/01/0764 Institutional research plan: CEZ:AV0Z1010914 Keywords : double - layer two-dimensional electron system * magnetotransport * Hall effect Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 3.327, year: 2002
Al-Khalili, Jim
2003-01-01
In this lively look at quantum science, a physicist takes you on an entertaining and enlightening journey through the basics of subatomic physics. Along the way, he examines the paradox of quantum mechanics--beautifully mathematical in theory but confoundingly unpredictable in the real world. Marvel at the Dual Slit experiment as a tiny atom passes through two separate openings at the same time. Ponder the peculiar communication of quantum particles, which can remain in touch no matter how far apart. Join the genius jewel thief as he carries out a quantum measurement on a diamond without ever touching the object in question. Baffle yourself with the bizzareness of quantum tunneling, the equivalent of traveling partway up a hill, only to disappear then reappear traveling down the opposite side. With its clean, colorful layout and conversational tone, this text will hook you into the conundrum that is quantum mechanics.
Theory of nonlinear optical response of ensembles of double quantum dots
Sitek, Anna; Machnikowski, Paweł
2009-09-01
We study theoretically the time-resolved four-wave mixing (FWM) response of an ensemble of pairs of quantum dots undergoing radiative recombination. At short (picosecond) delay times, the response signal shows beats that may be dominated by the subensemble of resonant pairs, which gives access to the information on the interdot coupling. At longer delay times, the decay of the FWM signal is governed by two rates which result from the collective interaction between the two dots and the radiation modes. The two rates correspond to the subradiant and super-radiant components in the radiative decay. Coupling between the dots enhances the collective effects and makes them observable even when the average energy mismatch between the dots is relatively large.
Tiutiunnyk, A.; Mora-Ramos, M. E.; Morales, A. L.; Duque, C. M.; Restrepo, R. L.; Ungan, F.; Martínez-Orozco, J. C.; Kasapoglu, E.; Duque, C. A.
2017-02-01
In this work we shall present a study of inelastic light scattering involving inter-subband electron transitions in coupled GaAs-(Ga,Al)As quantum wells. Calculations include the electron related Raman differential cross section and Raman gain. The effects of an external nonresonant intense laser field are used in order to tune these output properties. The confined electron states will be described by means of a diagonalization procedure within the effective mass and parabolic band approximations. It is shown that the application of the intense laser field can produce values of the intersubband electron Raman gain above 400 cm-1. The system proposed here is an alternative choice for the development of AlxGa1-xAs semiconductor laser diodes that can be tuned via an external nonresonant intense laser field.
Cho, Seok Hyeon; Been Heo, Su; Kang, Seong Jun
2018-03-01
We developed a double-layer structured transparent electrode for use in flexible quantum-dot light-emitting diodes (QLEDs). Silver nanowires (AgNWs) and highly conductive poly(3,4-ethylenedioxythiophene):poly(styrene sulfonate) (PEDOT:PSS) were coated on a transparent substrate to obtain a highly conductive and flexible transparent electrode. The highly conductive PEDOT:PSS improved the surface roughness of the AgNWs transparent electrode film as well as the surface coverage area of the film. The double-layer structured transparent electrode showed superior mechanical properties than conventional indium-tin oxide (ITO) and AgNWs transparent electrodes. QLEDs with the double-layer structured transparent electrode also showed good reliability under cyclic bending conditions. These results indicate that the double-layer structured AgNWs/PEDOT:PSS transparent electrode described here is a feasible alternative to ITO transparent electrodes for flexible QLEDs.
International Nuclear Information System (INIS)
Atanasov, Atanas Todorov
2014-01-01
The scaling of physical and biological characteristics of the living organisms is a basic method for searching of new biophysical laws. In series of previous studies the author showed that in Poikilotherms, Mammals and Aves, the volume to surface ratio V×S −1 (m) of organisms is proportional to their generation time T gt (s) via growth rate v (m s −1 ): V×S −1 = v gr ×T r . The power and the correlation coefficients are near to 1.0. Aim of this study is: i) to prove with experimental data the validity of the above equation for Unicellular organisms and ii) to show that perhaps, the cells are quantum-mechanical systems. The data for body mass M (kg), density ρ (kg/m 3 ), minimum and maximum doubling time T dt (s) for 50 unicellular organisms are assembled from scientific sources, and the computer program ‘Statistics’ is used for calculations. In result i) the analytical relationship from type: V×S −1 = 4.46⋅10 −11 ×T dt was found, where v gr = 4.46×10 −11 m/s and ii) it is shown that the products between cell mass M, cell length expressed by V/S ratio and growth rate v gr satisfied the Heisenberg uncertainty principle i.e. the inequalities V/S×M×v gr >h/2π and T dt ×M×v gr 2 >h/2π are valid, where h= 6.626×10 −34 J⋅s is the Planck constant. This rise the question: do cells appear quantum-mechanical systems?
Atanasov, Atanas Todorov
2014-10-01
The scaling of physical and biological characteristics of the living organisms is a basic method for searching of new biophysical laws. In series of previous studies the author showed that in Poikilotherms, Mammals and Aves, the volume to surface ratio V×S-1 (m) of organisms is proportional to their generation time Tgt(s) via growth rate v (m s-1): V×S-1 = vgr×Tr. The power and the correlation coefficients are near to 1.0. Aim of this study is: i) to prove with experimental data the validity of the above equation for Unicellular organisms and ii) to show that perhaps, the cells are quantum-mechanical systems. The data for body mass M (kg), density ρ (kg/m3), minimum and maximum doubling time Tdt (s) for 50 unicellular organisms are assembled from scientific sources, and the computer program `Statistics' is used for calculations. In result i) the analytical relationship from type: V×S-1 = 4.46ṡ10-11×Tdt was found, where vgr = 4.46×10-11 m/s and ii) it is shown that the products between cell mass M, cell length expressed by V/S ratio and growth rate vgr satisfied the Heisenberg uncertainty principle i.e. the inequalities V/S×M×vgr>h/2π and Tdt×M×vgr2>h/2π are valid, where h= 6.626×10-34 Jṡs is the Planck constant. This rise the question: do cells appear quantum-mechanical systems?
Energy Technology Data Exchange (ETDEWEB)
Atanasov, Atanas Todorov, E-mail: atanastod@abv.bg [Department of Physics and Biophysics, Faculty of Medicine, Trakia University, 11 Armeiska Str., 6000 Stara Zagora (Bulgaria)
2014-10-06
The scaling of physical and biological characteristics of the living organisms is a basic method for searching of new biophysical laws. In series of previous studies the author showed that in Poikilotherms, Mammals and Aves, the volume to surface ratio V×S{sup −1} (m) of organisms is proportional to their generation time T{sub gt}(s) via growth rate v (m s{sup −1}): V×S{sup −1} = v{sub gr}×T{sup r}. The power and the correlation coefficients are near to 1.0. Aim of this study is: i) to prove with experimental data the validity of the above equation for Unicellular organisms and ii) to show that perhaps, the cells are quantum-mechanical systems. The data for body mass M (kg), density ρ (kg/m{sup 3}), minimum and maximum doubling time T{sub dt} (s) for 50 unicellular organisms are assembled from scientific sources, and the computer program ‘Statistics’ is used for calculations. In result i) the analytical relationship from type: V×S{sup −1} = 4.46⋅10{sup −11}×T{sub dt} was found, where v{sub gr} = 4.46×10{sup −11} m/s and ii) it is shown that the products between cell mass M, cell length expressed by V/S ratio and growth rate v{sub gr} satisfied the Heisenberg uncertainty principle i.e. the inequalities V/S×M×v{sub gr}>h/2π and T{sub dt}×M×v{sub gr}{sup 2}>h/2π are valid, where h= 6.626×10{sup −34} J⋅s is the Planck constant. This rise the question: do cells appear quantum-mechanical systems?.
DEFF Research Database (Denmark)
Timofeev, V.B.; Larionov, A.V.; Ioselevich, A.S.
1998-01-01
narrowing with temperature increase from 4.5 to 30 K. A theoretical model is presented which explains the observed narrowing in terms of lateral thermally activated tunneling of spatially separated e-h pairs localized by random potential fluctuations in the quantum wells. (C) 1998 American Institute......The interwell radiative recombination from biased double quantum wells (DQW) in pin GaAs/AlGaAs heterostructures is investigated at different temperatures and external electrical fields. The luminescence line of interwell recombination of spatially separated electron-hole pairs exhibits systematic...
Alternating space charge and ambiguity of quantum states in double-barrier structure
International Nuclear Information System (INIS)
Pashkovskij, A.B.
2000-01-01
Solution for nonstationary self-consistent Schroedinger and Poisson equations describing resonance interaction of electrons tunneled through asymmetric double-barrier structures with a high-frequency electric field was obtained by summing perturbation theory series. In case of uniform distribution of electrons by energy the solution is obtained analytically, whereas in case of monoenergy beam, it is reduced to finding the roots of power five algebraic polynomial. It is shown that in some cases the influence of spatial charge gives rise to quite a new effect for the systems: several different electron wave functions will correspond to the same amplitude of high-frequency voltage applied to the structure and, accordingly, the values of high-frequency conductivity, transmission and reflection factors may differ by several times. As a result, instability of current transmission and hysteresis of volt-ampere characteristics may be observed in the structures [ru
Energy Technology Data Exchange (ETDEWEB)
Feng Shuanglong; Yang Junyou, E-mail: jyyang@mail.hust.edu.cn; Liu Ming; Zhu Hu; Zhang Jiansheng; Li Gen; Peng Jiangying; Liu Qiongzhen
2012-01-31
A double-layer (DL) film with a TiO{sub 2} nanosheet-layer on a layer of TiO{sub 2} nanorod-array, was synthesized on a transparent conductive fluorine-doped tin oxide substrate by a two-step hydrothermal method. Starting from the precursors of NaSeSO{sub 3}, CdSO{sub 4} and the complex of N(CH{sub 2}COOK){sub 3}, CdSe quantum dots (QDs) were grown on the DL-TiO{sub 2} substrate by chemical bath deposition method. The samples were characterized by X-ray diffraction, Scanning electron microscopy, Energy dispersion spectroscopy, and their optical scattering property was measured by light reflection spectrometry. Some CdSe QDs sensitized DL-TiO{sub 2} films serve as the photoanodes, were assembled into solar cell devices and their photovoltaic performance were also characterized. The short circuit current and open-circuit voltage of the solar cells range from 0.75 to 4.05 mA/cm{sup 2} and 0.20 - 0.42 V under the illumination of one sun (AM1.5, 100 mW/cm{sup 2}), respectively. The photocurrent density of the DL-TiO{sub 2} film is five times higher than that of a bare TiO{sub 2} nanorod array photoelectrode cell. - Highlights: Black-Right-Pointing-Pointer A two-step hydrothermal deposition method was used to deposit TiO{sub 2} films. Black-Right-Pointing-Pointer Double-layer TiO{sub 2} films were synthesized on transparent FTO substrate. Black-Right-Pointing-Pointer The bi-functional character of the electrode were confirmed. Black-Right-Pointing-Pointer Photocurrent density of DL-film electrode was enhanced 5 times than a single film.
Influence of spin correlations in the transport properties of a double quantum dot system
Costa Ribeiro, Laercio; Hamad, Ignacio; Chiappe, Guillermo; Victoriano Anda, Enrique
2013-03-01
In this work we study the influence of spin correlations in the transport properties of a system consisting of two quantum dots (QDs) with high Coulomb interaction U which are interconnected through a chain of N non-interacting sites and individually coupled to two metallic leads. Using both the finite U slave boson mean field approach (FUSBMFA) and the Logarithmic-discretization-embedded-cluster approximation (LDECA) we studied the system in different regions of the parameter space for which we calculate many physical quantities, namely local density of states, conductance, total spin, spin correlations, in addition to the renormalization parameters associated with the FUSBMFA. The results reveled a very rich physical scenario which is manifested by at least two different Kondo regimes, the well-known spin s = 1/2 and some other type of Kondo effect which appears as a result of the coupling between the QDs and the non-interacting central sites. We also consider the possibility of accessing some kind of Kondo box effect due to the discrete nature of the central chain and study how this regime is affected by the magnetic interaction between the local spins of the QD's and by the interaction between these spins and the spins of the conduction electros in the leads.
Current cross-correlations in double quantum dot Cooper pair splitter
Energy Technology Data Exchange (ETDEWEB)
Wrzesniewski, Kacper; Trocha, Piotr; Weymann, Ireneusz [Faculty of Physics, Adam Mickiewicz University, 61-614 Poznan (Poland)
2016-07-01
We investigate theoretically transport properties of a quantum dot (QD) system working as a Cooper pair splitter. The device is coupled to one superconducting and two ferromagnetic leads. Presented results are calculated using real-time diagrammatic technique in the sequential tunneling approximation with respect to the coupling to ferromagnetic leads. The transport properties are evaluated within the superconductor subgap regime taking into account Andreev reflection processes solely. We focus on the analysis of current and current cross-correlations, both in linear and nonlinear responses. Current cross-correlations give additional information about dynamics of transport processes. We identify both positive and negative signs of current cross-correlations and discuss mechanisms leading to those results. Strong negative cross-correlations are found when the occupation number of QD system becomes degenerate and near the emergence of the triplet blockade, while positive ones occur in the most range where current flows due to crossed Andreev processes. Finally, we consider ferromagnetic leads polarization and temperature influences on aforementioned features.
Energy Technology Data Exchange (ETDEWEB)
Lopez, S.Y. [Grupo de Educacion en Ciencias Experimentales y Matematicas-GECEM, Facultad de Educacion, Universidad de Antioquia, AA 1226 Medellin (Colombia); Mora-Ramos, M.E. [Facultad de Ciencias, Universidad Autonoma del Estado de Morelos, Av. Universidad 1001, CP 62209, Cuernavaca, Morelos (Mexico); Duque, C.A., E-mail: cduque@fisica.udea.edu.c [Instituto de Fisica, Universidad de Antioquia, AA 1226 Medellin (Colombia)
2009-12-15
The photoluminescence energy transitions in GaAs-Ga{sub 1-x}Al{sub x}As coupled double quantum wells are presented by considering the simultaneous effects of applied electric and magnetic fields and hydrostatic pressure. Calculations have been made in the framework of the effective mass and parabolic band approximations and using a variational procedure. The electric field is taken to be oriented along the growth direction of the heterostructure whereas for the magnetic field both in-plane and in-growth directions have been considered. The results show that the hydrostatic pressure and the applied electric field are two useful tools to tune the direct and indirect exciton transitions in such heterostructures. Our results are in good agreement with previous experimental findings in double quantum wells under applied electric field and hydrostatic pressure.
International Nuclear Information System (INIS)
Lopez, S.Y.; Mora-Ramos, M.E.; Duque, C.A.
2009-01-01
The photoluminescence energy transitions in GaAs-Ga 1-x Al x As coupled double quantum wells are presented by considering the simultaneous effects of applied electric and magnetic fields and hydrostatic pressure. Calculations have been made in the framework of the effective mass and parabolic band approximations and using a variational procedure. The electric field is taken to be oriented along the growth direction of the heterostructure whereas for the magnetic field both in-plane and in-growth directions have been considered. The results show that the hydrostatic pressure and the applied electric field are two useful tools to tune the direct and indirect exciton transitions in such heterostructures. Our results are in good agreement with previous experimental findings in double quantum wells under applied electric field and hydrostatic pressure.
International Nuclear Information System (INIS)
Tarucha, S; Obata, T; Pioro-Ladriere, M; Brunner, R; Shin, Y-S; Kubo, T; Tokura, Y
2011-01-01
Electric dipole spin resonance of two individual electrons and the influence of hyperfine coupling on the spin resonance are studied for a double quantum dot equipped with a micro-magnet. The spin resonance occurs by oscillating the electron in each dot at microwave (MW) frequencies in the presence of a micro-magnet induced stray field. The observed continuous wave (CW) and time-resolved spin resonances are consistent with calculations in which the MW induced AC electric field and micro-magnet induced stray field are taken into account. The influence of hyperfine coupling causes an increase and broadening of the respective CW spin resonance peaks through dynamical nuclear polarization when sweeping up the magnetic field. This behaviour appears stronger for the larger of the two spin resonance peaks and in general becomes more pronounced as the MW power increases, both reflecting that the electron-nuclei interaction is more efficient for the stronger spin resonance. In addition the hyperfine coupling effect only becomes pronounced when the MW induced AC magnetic field exceeds the fluctuating nuclear field.
Bandyopadhyay, D; Bhattacharyya, D
2006-10-15
It was shown earlier, from database analysis, model building studies, and molecular dynamics simulations that formation of cross-strand bifurcated or Extra Watson-Crick hydrogen (EWC) bonds between successive base pairs may lead to extra rigidity to DNA double helices of certain sequences. The strengths of these hydrogen bonds are debatable, however, as they do not have standard linear geometry criterion. We have therefore carried out detailed ab initio quantum chemical studies using RHF/6-31G(2d,2p) and B3LYP/6-31G(2p,2d) basis sets to determine strengths of several bent hydrogen bonds with different donor and acceptors. Interaction energy calculations, corrected for the basis set superposition errors, suggest that N-H...O type bent EWC hydrogen bonds are possible along same strands or across the strands between successive base pairs, leading to significant stability (ca. 4-9 kcal/mol). The N-H...N and C-H...O type interactions, however, are not so stabilizing. Hence, consideration of EWC N-H...O H-bonds can lead to a better understanding of DNA sequence directed structural features. Copyright (c) 2006 Wiley Periodicals, Inc.
Donor states in a semimagnetic Cd1 -xinMnxin Te /Cd1 -xoutMnxout Te Double Quantum Well
Kalpana, Panneer Selvam; Nithiananthi, Perumal; Jayakumar, Kalyanasundaram
2017-02-01
The theoretical investigation has been carried out on the binding energy of donor associated with the electrons confined in a Cd1 -xinMnxin Te /Cd1 -xoutMnxout Te Double Quantum Well (DQW) as a function of central barrier width for various well dimensions and impurity locations in the barrier and the well. The magnetic field can act as a tool to continuously change the interwell coupling inside this DQW systems and its effect on donor binding has also been studied. Moreover, the polaronic corrections, which is due to the strong exchange interaction between the magnetic moment of Mn2+ ion and the spin of the confined carrier, to the binding energy of the hydrogenic donor impurity has also been estimated with and without the application of magnetic field. The binding energy of the donor impurity is determined by solving the Schrodinger equation variationally in the effective mass approximation and the effect due to Bound Magnetic Polaron (BMP) is included using mean field theory with the modified Brillouin function. The results are reported and discussed.
Koch, Matthias; Pagan, Mark; Persson, Mats; Gawinkowski, Sylwester; Waluk, Jacek; Kumagai, Takashi
2017-09-13
Quantum tunneling of hydrogen atoms (or protons) plays a crucial role in many chemical and biological reactions. Although tunneling of a single particle has been examined extensively in various one-dimensional potentials, many-particle tunneling in high-dimensional potential energy surfaces remains poorly understood. Here we present a direct observation of a double hydrogen atom transfer (tautomerization) within a single porphycene molecule on a Ag(110) surface using a cryogenic scanning tunneling microscope (STM). The tautomerization rates are temperature independent below ∼10 K, and a large kinetic isotope effect (KIE) is observed upon substituting the transferred hydrogen atoms by deuterium, indicating that the process is governed by tunneling. The observed KIE for three isotopologues and density functional theory calculations reveal that a stepwise transfer mechanism is dominant in the tautomerization. It is also found that the tautomerization rate is increased by vibrational excitation via an inelastic electron tunneling process. Moreover, the STM tip can be used to manipulate the tunneling dynamics through modification of the potential landscape.
Cheng, Qifa; Xu, Jing; Wang, Tao; Fan, Ling; Ma, Ruifang; Yu, Xinzhi; Zhu, Jian; Xu, Zhi; Lu, Bingan
2017-11-01
Photoelectrocatalysis (PEC) has been demonstrated as a promising technique for hydrogen production. However, the high over-potential and high recombination rate of photo-induced electron-hole pairs lead to poor hydrogen production efficiency. In order to overcome these problems, TiO2 and Au dual quantum dots (QDs) on three-dimensional graphene flowers (Au@TiO2@3DGFs) was synthesized by an electro-deposition strategy. The combination of Au and TiO2 modulates the band gap of TiO2, shifts the absorption to visible lights and improves the utilization efficiency of solar light. Simultaneously, the size-quantization TiO2 on 3DGFs not only achieves a larger specific surface area over conventional nanomaterials, but also promotes the separation of the photo-induced electron-hole pairs. Besides, the 3DGFs as a scaffold for QDs can provide more active sites and stable structure. Thus, the newly-developed Au@TiO2@3DGFs composite exhibited an impressive PEC activity and excellent durability. Under -240 mV potential (vs. RHE), the photoelectric current density involved visible light illumination (100 mW cm-2) reached 90 mA cm-2, which was about 3.6 times of the natural current density (without light, only 25 mA cm-2). It worth noting that the photoelectric current density did not degrade and even increased to 95 mA cm-2 over 90 h irradiation, indicating an amazing chemical stability.
International Nuclear Information System (INIS)
Baghramyan, H M; Barseghyan, M G; Kirakosyan, A A
2012-01-01
We consider the effect of hydrostatic pressure, temperature and the variations of structure's sizes on interband transition energy and absorption coefficient in InAs/GaAs vertically coupled double quantum dots. The threshold energy of interband optical transitions is examined as a function of hydrostatic pressure and temperature for the different geometries of the structure. We also investigated the dependencies of the interband light absorption coefficient on the incident photon energy.
International Nuclear Information System (INIS)
Rojas-Briseño, J.G.; Martínez-Orozco, J.C.; Rodríguez-Vargas, I.; Mora-Ramos, M.E.; Duque, C.A.
2013-01-01
In this work we are reporting the energy level spectrum for a quantum system consisting of an n-type double δ-doped quantum well with a Schottky barrier potential in a Gallium Arsenide matrix. The calculated states are taken as the basis for the evaluation of the linear and third-order nonlinear contributions to the optical absorption coefficient and to the relative refractive index change, making particular use of the asymmetry of the potential profile. These optical properties are then reported as a function of the Schottky barrier height (SBH) and the separation distance between the δ-doped quantum wells. Also, the effects of the application of hydrostatic pressure are studied. The results show that the amplitudes of the resonant peaks are of the same order of magnitude of those obtained in the case of single δ-doped field effect transistors; but tailoring the asymmetry of the confining potential profile allows the control the resonant peak positions
Energy Technology Data Exchange (ETDEWEB)
Rojas-Briseño, J.G.; Martínez-Orozco, J.C.; Rodríguez-Vargas, I. [Unidad Académica de Física, Universidad Autónoma de Zacatecas, Calzada Solidaridad esquina con Paseo la Bufa S/N, C.P. 98060, Zacatecas, Zac. (Mexico); Mora-Ramos, M.E. [Facultad de Ciencias, Universidad Autónoma del Estado de Morelos, Av. Universidad 1001, CP 62209, Cuernavaca, Morelos (Mexico); Instituto de Física, Universidad de Antioquia, AA 1226, Medellín (Colombia); Duque, C.A., E-mail: cduque@fisica.udea.edu.co [Instituto de Física, Universidad de Antioquia, AA 1226, Medellín (Colombia)
2013-09-01
In this work we are reporting the energy level spectrum for a quantum system consisting of an n-type double δ-doped quantum well with a Schottky barrier potential in a Gallium Arsenide matrix. The calculated states are taken as the basis for the evaluation of the linear and third-order nonlinear contributions to the optical absorption coefficient and to the relative refractive index change, making particular use of the asymmetry of the potential profile. These optical properties are then reported as a function of the Schottky barrier height (SBH) and the separation distance between the δ-doped quantum wells. Also, the effects of the application of hydrostatic pressure are studied. The results show that the amplitudes of the resonant peaks are of the same order of magnitude of those obtained in the case of single δ-doped field effect transistors; but tailoring the asymmetry of the confining potential profile allows the control the resonant peak positions.
Torchynska, T. V.; Casas Espinola, J. L.; Jaramillo Gómez, J. A.; Douda, J.; Gazarian, K.
2013-06-01
Double core CdSeTe/ZnS quantum dots (QDs) with emission at 800 nm (1.60 eV) have been studied by photoluminescence (PL) and Raman scattering methods in the non-conjugated state and after the conjugation to the Pseudo rabies virus (PRV) antibodies. The transformation of PL spectra, stimulated by the electric charge of antibodies, has been detected for the bioconjugated QDs. Raman scattering spectra are investigated with the aim to reveal the CdSeTe core compositions. The double core QD energy diagrams were designed that help to analyze the PL spectra and their transformation at the bioconjugation. It is revealed that the interface in double core QDs has the type II quantum well character that permits to explain the near IR optical transition (1.60 eV) in the double core QDs. It is shown that the essential transformation of PL spectra is useful for the study of QD bioconjugation with specific antibodies and can be a powerful technique in early medical diagnostics.
Park, Seoung-Hwan; Ahn, Doyeol
2018-05-01
Ultraviolet light emission characteristics of lattice-matched BxAlyGa1-x-y N/AlN quantum well (QW) structures with double AlGaN delta layers were investigated theoretically. In contrast to conventional single dip-shaped QW structure where the reduction effect of the spatial separation between electron and hole wave functions is negligible, proposed double dip-shaped QW shows significant enhancement of the ultraviolet light emission intensity from a BAlGaN/AlN QW structure due to the reduced spatial separation between electron and hole wave functions. The emission peak of the double dip-shaped QW structure is expected to be about three times larger than that of the conventional rectangular AlGaN/AlN QW structure.
Energy Technology Data Exchange (ETDEWEB)
Pocas, Luiz Carlos; Sawata, Marcella Ferraz [Universidade Tecnologica Federal do Parana (UTFPR), Apucarana, PR (Brazil); Lourenco, Sidney Alves [Universidade Tecnologica Federal do Parana (UTFPR), Londrina, PR (Brazil); Laureto, Edson; Duarte, Jose Leonil; Dias, Ivan Frederico Lupiano [Universidade Estadual de Londrina (UEL), PR (Brazil). Dept. de Fisica; Quivy, A.A. [Universidade de Sao Paulo (IF/USP), SP (Brazil). Inst. de Fisica
2012-07-01
Full text: The notable progress in the fabrication of low-dimensional semiconductor structures during the last years has made it possible to reduce the effective device dimension from three-dimensional bulk materials, to low dimensional quantum systems, as for example, to quasi-two dimensional quantum well systems and to quasi-zero dimensional quantum dots systems. Semiconductors quantum dots (QDs) have attracted considerable interest from both fundamental and technological point of view and have been extensively studied in aspects involving its structural properties and the electronic structure of the confined charge carriers. These systems have been utilized for applications on optoelectronics devices such as lasers, detectors, photodiodes, solar cells, etc. In despite of its fundamental importance, many aspects of their behavior are still not fully understood including, as for example, carrier capture and escape, optical transitions, effects of the inhomogeneous size and energy distribution, etc. Quantum dots grown by Stranski-Krastanov (SK) technique are self-assembled islands, favored by relaxation of the elastic energy that emerge due to the difference of lattice parameter between the epitaxial layer and the substratum. One of the challenges in growing of QDs by SK is to have control of both size and distribution of the islands in the samples. Recently, the growth of samples with vertically stacked multilayer separated by a layer of another semiconductor material, known as stacked QDs, have shown a vertical alignment of QDs which leads to a better QDs size distribution for the upper layers. The strength of electronic coupling, in the case of vertically stacked QDs, as well as the QDs size distribution, is controlled by thickness of the layers that separate the quantum dots (spacer layers). In this work we present a study from a set of self-assembled stacked InAs/GaAs double-quantum-dots grown on GaAs-(001) substrates by molecular beam epitaxy obtained by SK
International Nuclear Information System (INIS)
Daqiq, Reza; Ghobadi, Nader
2016-01-01
We study the quantum size effects of an MgO-based double barrier magnetic tunnel junction with a nonmagnetic-metal (DBMTJ-NM) (semiconductor (DBMTJ-SC)) spacer on the charge current and the spin-transfer torque (STT) components using non-equilibrium Green's function (NEGF) formalism. The results show oscillatory behavior due to the resonant tunneling effect depending on the structure parameters. We find that the charge current and the STT components in the DBMTJ-SC demonstrate the magnitude enhancement in comparison with the DBMTJ-NM. The bias dependence of the STT components in a DBMTJ-NM shows different behavior in comparison with spin valves and conventional MTJs. Therefore, by choosing a specific SC spacer with suitable thickness in a DBMTJ the charge current and the STT components significantly increase so that one can design a device with high STT and faster magnetization switching. - Highlights: • The quantum size effects are studied in double barrier magnetic tunnel junctions. • Spin torque (ST) components oscillate for increasing of middle spacer thicknesses. • Due to the resonant tunneling in the quantum well, oscillations have appeared. • By replacement a metal spacer with a semiconductor (ZnO) ST has increased. • The ST components vs. bias show gradually decreasing unlike spin valves or MTJs.
Energy Technology Data Exchange (ETDEWEB)
Daqiq, Reza; Ghobadi, Nader
2016-07-15
We study the quantum size effects of an MgO-based double barrier magnetic tunnel junction with a nonmagnetic-metal (DBMTJ-NM) (semiconductor (DBMTJ-SC)) spacer on the charge current and the spin-transfer torque (STT) components using non-equilibrium Green's function (NEGF) formalism. The results show oscillatory behavior due to the resonant tunneling effect depending on the structure parameters. We find that the charge current and the STT components in the DBMTJ-SC demonstrate the magnitude enhancement in comparison with the DBMTJ-NM. The bias dependence of the STT components in a DBMTJ-NM shows different behavior in comparison with spin valves and conventional MTJs. Therefore, by choosing a specific SC spacer with suitable thickness in a DBMTJ the charge current and the STT components significantly increase so that one can design a device with high STT and faster magnetization switching. - Highlights: • The quantum size effects are studied in double barrier magnetic tunnel junctions. • Spin torque (ST) components oscillate for increasing of middle spacer thicknesses. • Due to the resonant tunneling in the quantum well, oscillations have appeared. • By replacement a metal spacer with a semiconductor (ZnO) ST has increased. • The ST components vs. bias show gradually decreasing unlike spin valves or MTJs.
International Nuclear Information System (INIS)
Lindelof, P.E.; Bruus, H.; Taboryski, R.; Soerensen, C.B.
1989-01-01
An inverted and a normal GaAs/AlGaAs interface grown back to back in a socalled selectively doped double heterostructure (SD DH) has been studied in magnetic fields up to 12 tesla and at temperatures down to 0.3 K. The longitudinal resistance goes to zero at minima of the Shubnikov-de Haas oscillations. The Hall resistivity is found to exhibit the quantum Hall effect. By etching the surface of the double heterostructure wafer we create an unbalance in the density of electrons in the two parallel two-dimensional electronic sheets. Although we in this way create only a modest change in the electron densities, we observe a significant change in the Shubnikov-de Haas oscillations, which can be interpreted as a beat between the oscillations of two electron layers with different densities. At the same time we observe a significant variation of the width of the quantum Hall steps. The most astonishing feature of our results is a clear quantum Hall plateou at 1/2 filling in each of the two parallel layers observed at temperatures below 1 K at a magnetic field above 10 T. Weak localization was also studied and such experiments are consistent with two parallel and independent two-dimensional electronic layers. (orig.)
Energy Technology Data Exchange (ETDEWEB)
Yablonsky, A. N., E-mail: yablonsk@ipmras.ru; Zhukavin, R. Kh.; Bekin, N. A.; Novikov, A. V.; Yurasov, D. V.; Shaleev, M. V. [Russian Academy of Sciences, Institute for Physics of Microstructures (Russian Federation)
2016-12-15
For SiGe/Si(001) epitaxial structures with two nonequivalent SiGe quantum wells separated by a thin Si barrier, the spectral and time characteristics of interband photoluminescence corresponding to the radiative recombination of excitons in quantum wells are studied. For a series of structures with two SiGe quantum wells different in width, the characteristic time of tunneling of charge carriers (holes) from the narrow quantum well, distinguished by a higher exciton recombination energy, to the wide quantum well is determined as a function of the Si barrier thickness. It is shown that the time of tunneling of holes between the Si{sub 0.8}5Ge{sub 0.15} layers with thicknesses of 3 and 9 nm steadily decreases from ~500 to <5 ns, as the Si barrier thickness is reduced from 16 to 8 nm. At intermediate Si barrier thicknesses, an increase in the photoluminescence signal from the wide quantum well is observed, with a characteristic time of the same order of magnitude as the luminescence decay time of the narrow quantum well. This supports the observation of the effect of the tunneling of holes from the narrow to the wide quantum well. A strong dependence of the tunneling time of holes on the Ge content in the SiGe layers at the same thickness of the Si barrier between quantum wells is observed, which is attributed to an increase in the effective Si barrier height.
Tunable Resonant-Cavity-Enhanced Photodetector with Double High-Index-Contrast Grating Mirrors
DEFF Research Database (Denmark)
Learkthanakhachon, Supannee; Yvind, Kresten; Chung, Il-Sug
2013-01-01
In this paper, we propose a broadband-tunable resonant-cavity-enhanced photodetector (RCE-PD) structure with double high-index-contrast grating (HCG) mirrors and numerically investigate its characteristics. The detector is designed to operate at 1550-nm wavelength. The detector structure consists....... Furthermore, the fact that it can be fabricated on a silicon platform offers us a possibility of integration with electronics.......In this paper, we propose a broadband-tunable resonant-cavity-enhanced photodetector (RCE-PD) structure with double high-index-contrast grating (HCG) mirrors and numerically investigate its characteristics. The detector is designed to operate at 1550-nm wavelength. The detector structure consists...... of a top InP HCG mirror, a p-i-n photodiode embedding multiple quantum wells, and a Si HCG mirror formed in the Si layer of a silicon-on-insulator wafer. The detection wavelength can be changed by moving the top InP HCG mirror suspended in the air. High reflectivity and small penetration length of HCGs...
International Nuclear Information System (INIS)
Tangarife, E.; Duque, C.A.
2010-01-01
This work is concerned with the theoretical study of the combined effects of applied electric field and hydrostatic pressure on the binding energy and impurity polarizability of a donor impurity in laterally coupled double InAs/GaAs quantum-well wires. calculations have been made in the effective mass and parabolic band approximations and using a variational method. The results are reported for different configurations of wire and barriers widths, impurity position, and electric field and hydrostatic pressure strengths. Our results show that for symmetrical structures the binding energy is an even function of the impurity position along the growth direction of the structure. Also, we found that for hydrostatic pressure strength up to 38 kbar, the binding energy increases linearly with hydrostatic pressure, while for larger values of hydrostatic pressure the binding energy has a nonlinear behavior. Finally, we found that the hydrostatic pressure can increase the coupling between the two parallel quantum well wires.
International Nuclear Information System (INIS)
Ulloa, J. M.; Koenraad, P. M.; Gapihan, E.; Letoublon, A.; Bertru, N.
2007-01-01
Cross-sectional scanning tunneling microscopy was used to study at the atomic scale the double capping process of self-assembled InAs/InP quantum dots (QDs) grown by molecular beam epitaxy on a (311)B substrate. The thickness of the first capping layer is found to play a mayor role in determining the final results of the process. For first capping layers up to 3.5 nm, the height of the QDs correspond to the thickness of the first capping layer. Nevertheless, for thicknesses higher than 3.5 nm, a reduction in the dot height compared to the thickness of the first capping layer is observed. These results are interpreted in terms of a transition from a double capping to a classical capping process when the first capping layer is thick enough to completely cover the dots
Martínez-Orozco, J. C.; Rojas-Briseño, J. G.; Rodríguez-Magdaleno, K. A.; Rodríguez-Vargas, I.; Mora-Ramos, M. E.; Restrepo, R. L.; Ungan, F.; Kasapoglu, E.; Duque, C. A.
2017-11-01
In this paper we are reporting the computation for the Nonlinear Optical Rectification (NOR) and the Second and Third Harmonic Generation (SHG and THG) related with electronic states of asymmetric double Si-δ-doped quantum well in a GaAs matrix when this is subjected to an in-plane (x-oriented) constant magnetic field effect. The work is performed in the effective mass and parabolic band approximations in order to compute the electronic structure for the system by a diagonalization procedure. The expressions for the nonlinear optical susceptibilities, χ0(2), χ2ω(2), and χ3ω(3), are those arising from the compact matrix density formulation and stand for the NOR, SHG, and THG, respectively. This asymmetric double δ-doped quantum well potential profile actually exhibits nonzero NOR, SHG, and THG responses which can be easily controlled by the in-plane (x-direction) externally applied magnetic field. In particular we find that for the chosen configuration the harmonic generation is in the far-infrared/THz region, thus and becoming suitable building blocks for photodetectors in this range of the electromagnetic spectra.
Spin magneto-transport in a Rashba-Dresselhaus quantum channel with single and double finger gates
Tang, Chi-Shung; Keng, Jia-An; Abdullah, Nzar Rauf; Gudmundsson, Vidar
2017-05-01
We address spin-resolved electronic transport properties in a Rashba-Dresselhaus quantum channel in the presence of an in-plane magnetic field. The strong Rashba-Dresselhaus effect induces an asymmetric spin-splitting energy spectrum with a spin-orbit-Zeeman gap. This asymmetric fact in energy spectrum may result in various quantum dynamic features in conductance due to the presence of finger gates. This asymmetric spin-splitting energy spectrum results in a bound state in continuum for electrons within ultralow energy regime with binding energies in order of 10-1 meV.
Introduction to quantum groups
International Nuclear Information System (INIS)
Sudbery, A.
1996-01-01
These pedagogical lectures contain some motivation for the study of quantum groups; a definition of ''quasi triangular Hopf algebra'' with explanations of all the concepts required to build it up; descriptions of quantised universal enveloping algebras and the quantum double; and an account of quantised function algebras and the action of quantum groups on quantum spaces. (author)
Feyer, Vitaliy; Prince, Kevin C; Coreno, Marcello; Melandri, Sonia; Maris, Assimo; Evangelisti, Luca; Caminati, Walther; Giuliano, Barbara M; Kjaergaard, Henrik G; Carravetta, Vincenzo
2018-02-01
We have performed core level photoemission spectroscopy of gaseous acetylacetone, its fully deuterated form, and two derivatives, benzoylacetone and dibenzoylmethane. These molecules show intramolecular hydrogen bonds, with a proton located in a double-well potential, whose barrier height is different for the three compounds. This has allowed us to examine the effect of the double-well potential on photoemission spectra. Two distinct O 1s core hole peaks are observed, previously assigned to two chemical states of oxygen. We provide an alternative assignment of the double-peak structure of O 1s spectra by taking full account of the extended nature of the wave function associated with the nuclear motion of the proton, the shape of the ground and final state potentials in which the proton is located, and the nonzero temperature of the samples. The peaks are explained in terms of an unusual Franck-Condon factor distribution.
Energy Technology Data Exchange (ETDEWEB)
KIM,YONGMIN; PERRY,C.H.; SIMMONS,JERRY A.; KLEM,JOHN F.
2000-05-11
In-plane magnetic field photoluminescence spectra from n series of n-type modulation doped GaAs/Al{sub 0.3}Ga{sub 0.7}As coupled double quantum wells show distinctive doublet structures related to the tunnel-split ground sub-level states. The magnetic field behavior of the upper transition from the antisymmetric state strongly depends on sample mobility. In a lower mobility sample, the transition energy displays an N-type kink with field (namely a maximum followed by a minimum), whereas higher mobility samples have a linear dependence. The former is attributed to a coupling mechanism due to homogeneous broadening of the electron and hole states. The results are in good agreement with recent theoretical calculations.
Energy Technology Data Exchange (ETDEWEB)
Yablonsky, A. N., E-mail: yablonsk@ipm.sci-nnov.ru; Morozov, S. V.; Gaponova, D. M.; Aleshkin, V. Ya. [Russian Academy of Sciences, Institute for Physics of Microstructures (Russian Federation); Shengurov, V. G.; Zvonkov, B. N.; Vikhrova, O. V.; Baidus’, N. V. [Lobachevsky State University of Nizhny Novgorod (Russian Federation); Krasil’nik, Z. F. [Russian Academy of Sciences, Institute for Physics of Microstructures (Russian Federation)
2016-11-15
We report the observation of stimulated emission in heterostructures with double InGaAs/GaAsSb/GaAs quantum wells, grown on Si(001) substrates with the application of a relaxed Ge buffer layer. Stimulated emission is observed at 77 K under pulsed optical pumping at a wavelength of 1.11 μm, i.e., in the transparency range of bulk silicon. In similar InGaAs/GaAsSb/GaAs structures grown on GaAs substrates, room-temperature stimulated emission is observed at 1.17 μm. The results obtained are promising for integration of the structures into silicon-based optoelectronics.
International Nuclear Information System (INIS)
Shepherd, James J.; Henderson, Thomas M.; Scuseria, Gustavo E.
2016-01-01
Over the past few years, pair coupled cluster doubles (pCCD) has shown promise for the description of strong correlation. This promise is related to its apparent ability to match results from doubly occupied configuration interaction (DOCI), even though the latter method has exponential computational cost. Here, by modifying the full configuration interaction quantum Monte Carlo algorithm to sample only the seniority zero sector of Hilbert space, we show that the DOCI and pCCD energies are in agreement for a variety of 2D Hubbard models, including for systems well out of reach for conventional configuration interaction algorithms. Our calculations are aided by the sign problem being much reduced in the seniority zero space compared with the full space. We present evidence for this and then discuss the sign problem in terms of the wave function of the system which appears to have a simplified sign structure.
Energy Technology Data Exchange (ETDEWEB)
Miranda, Guillermo L. [Fisica Teorica y Aplicada, Escuela de Ingenieria de Antioquia, A.A. 7516 Medellin (Colombia); Instituto de Fisica, Universidad de Antioquia, AA 1226 Medellin (Colombia); Mora-Ramos, Miguel E., E-mail: memora@uaem.mx [Fisica Teorica y Aplicada, Escuela de Ingenieria de Antioquia, A.A. 7516 Medellin (Colombia); Facultad de Ciencias, Universidad Autonoma del Estado de Morelos, Av. Universidad 1001, C.P. 62209 Cuernavaca, Morelos (Mexico); Instituto de Fisica, Universidad de Antioquia, AA 1226 Medellin (Colombia); Duque, Carlos A. [Instituto de Fisica, Universidad de Antioquia, AA 1226 Medellin (Colombia)
2013-01-15
In this work the variations of the exciton-related optical absorption and the change of the refractive index in a GaAs-(Ga,Al)As double quantum well as functions of the geometric parameters of the heterostructure are investigated. The variational method is applied within the framework of the parabolic band and effective mass approximations, in order to obtain the 1s-like exciton energy spectrum. The outcome for the related optical coefficients shows a quenched and redshifted light absorption as a result of the increment in the inner barrier and right-hand well widths, with the possibility of an enhancement of the excitonic contribution to the relative change in the refractive index.
Energy Technology Data Exchange (ETDEWEB)
Fan, Yao; Liu, Li; Sun, Donglei; Lan, Hanyue [The Modernization Engineering Technology Research Center of Ethnic Minority Medicine of Hubei Province, College of Pharmacy, South-Central University for Nationalities, Wuhan 430074 (China); Fu, Haiyan, E-mail: fuhaiyan@mail.scuec.edu.cn [The Modernization Engineering Technology Research Center of Ethnic Minority Medicine of Hubei Province, College of Pharmacy, South-Central University for Nationalities, Wuhan 430074 (China); Yang, Tianming, E-mail: tmyang@mail.scuec.edu.cn [The Modernization Engineering Technology Research Center of Ethnic Minority Medicine of Hubei Province, College of Pharmacy, South-Central University for Nationalities, Wuhan 430074 (China); She, Yuanbin, E-mail: sheyb@zjut.edu.cn [State Key Laboratory Breeding Base of Green Chemistry-Synthesis Technology, College of Chemical Engineering, Zhejiang University of Technology, Hangzhou 310032 (China); Ni, Chuang [The Modernization Engineering Technology Research Center of Ethnic Minority Medicine of Hubei Province, College of Pharmacy, South-Central University for Nationalities, Wuhan 430074 (China)
2016-04-15
As a popular detection model, the fluorescence “turn-off” sensor based on quantum dots (QDs) has already been successfully employed in the detections of many materials, especially in the researches on the interactions between pesticides. However, the previous studies are mainly focused on simple single track or the comparison based on similar concentration of drugs. In this work, a new detection method based on the fluorescence “turn-off” model with water-soluble ZnCdSe and CdSe QDs simultaneously as the fluorescent probes is established to detect various pesticides. The fluorescence of the two QDs can be quenched by different pesticides with varying degrees, which leads to the differences in positions and intensities of two peaks. By combining with chemometrics methods, all the pesticides can be qualitative and quantitative respectively even in real samples with the limit of detection was 2 × 10{sup −8} mol L{sup −1} and a recognition rate of 100%. This work is, to the best of our knowledge, the first report on the detection of pesticides based on the fluorescence quenching phenomenon of double quantum dots combined with chemometrics methods. What's more, the excellent selectivity of the system has been verified in different mediums such as mixed ion disruption, waste water, tea and water extraction liquid drugs. - Highlights: • A new model based on double QDs is established for pesticide residues detection. • The fluorescent data array sensor is coupled with chmometrics methods. • The sensor can be highly sensitive and selective detection in actual samples.
Directory of Open Access Journals (Sweden)
Muhammad Sohail Haroone
2018-06-01
Full Text Available Quantum dots (QDs luminescent films are extensively applied to optoelectronics and optical devices. However, QDs aggregation results in the quenching of their fluorescence property which limits their practical applications to a greater extent. In order to resolve this issue, 3-mercaptopropionic acid (3-MPA functionalized Cadmium Tellurium (CdTe QDs were stabilized by silk fibroin (SB and co-assembled with layered doubled hydroxide (LDH to form (QDs@SF/LDHn ultrathin films (UTFs via the layer-by-layer (LBL technique. UV–Vis absorption and fluorescence spectroscopy showed a stepwise and normal growth of the films upon increasing the number of deposition cycles. XRD and AFM studies confirmed the formation of a periodic layered structure and regular surface morphology of the thin films. As compared to (CdTe QDs/LDHnUTFs, the (CdTe QDs@SF/LDHnUTFs displayed fluorescence enhancement and longer fluorescent lifetime, both in solid states and aqueous solutions. Furthermore compared with the solution state, the fluorescence enhancement of SF-RC and SF-β are, respectively, 7 times and 17 times in the (CdTe QDs@SF/LDHn UTFs, indicating that the LDH nanosheets favor the fluorescence enhancement effect on the CdTe QDs@SF. The fabricated materials displayed fluorescence response to a biological molecule such as immune globulin, lgG. Thus, the (CdTe QDs@SF/LDHn UTFs has a potential to be used as biosensor. Keywords: CdTe quantum dots, Silk fibroin, Layered doubled hydroxide, Co-assembly, Fluorescence enhancement
International Nuclear Information System (INIS)
Fan, Yao; Liu, Li; Sun, Donglei; Lan, Hanyue; Fu, Haiyan; Yang, Tianming; She, Yuanbin; Ni, Chuang
2016-01-01
As a popular detection model, the fluorescence “turn-off” sensor based on quantum dots (QDs) has already been successfully employed in the detections of many materials, especially in the researches on the interactions between pesticides. However, the previous studies are mainly focused on simple single track or the comparison based on similar concentration of drugs. In this work, a new detection method based on the fluorescence “turn-off” model with water-soluble ZnCdSe and CdSe QDs simultaneously as the fluorescent probes is established to detect various pesticides. The fluorescence of the two QDs can be quenched by different pesticides with varying degrees, which leads to the differences in positions and intensities of two peaks. By combining with chemometrics methods, all the pesticides can be qualitative and quantitative respectively even in real samples with the limit of detection was 2 × 10"−"8 mol L"−"1 and a recognition rate of 100%. This work is, to the best of our knowledge, the first report on the detection of pesticides based on the fluorescence quenching phenomenon of double quantum dots combined with chemometrics methods. What's more, the excellent selectivity of the system has been verified in different mediums such as mixed ion disruption, waste water, tea and water extraction liquid drugs. - Highlights: • A new model based on double QDs is established for pesticide residues detection. • The fluorescent data array sensor is coupled with chmometrics methods. • The sensor can be highly sensitive and selective detection in actual samples.
Fernandes, I. L.; Cabrera, G. G.
2018-05-01
Based on Keldysh non-equilibrium Green function method, we have investigated spin current production in a hybrid T-shaped device, consisting of a central quantum dot connected to the leads and a side dot which only couples to the central dot. The topology of this structure allows for quantum interference of the different paths that go across the device, yielding Fano resonances in the spin dependent transport properties. Correlation effects are taken into account at the central dot and handled within a mean field approximation. Its interplay with the Fano effect is analyzed in the strong coupling regime. Non-vanishing spin currents are only obtained when the leads are ferromagnetic, the current being strongly dependent on the relative orientation of the lead polarizations. We calculate the conductance (spin and charge) by numerically differentiating the current, and a rich structure is obtained as a manifestation of quantum coherence and correlation effects. Increase of the Coulomb interaction produces localization of states at the side dot, largely suppressing Fano resonances. The interaction is also responsible for the negative values of the spin conductance in some regions of the voltage near resonances, effect which is the spin analog of the Esaki tunnel diode. We also analyze control of the currents via gate voltages applied to the dots, possibility which is interesting for practical operations.
Fan, Yao; Liu, Li; Sun, Donglei; Lan, Hanyue; Fu, Haiyan; Yang, Tianming; She, Yuanbin; Ni, Chuang
2016-04-15
As a popular detection model, the fluorescence "turn-off" sensor based on quantum dots (QDs) has already been successfully employed in the detections of many materials, especially in the researches on the interactions between pesticides. However, the previous studies are mainly focused on simple single track or the comparison based on similar concentration of drugs. In this work, a new detection method based on the fluorescence "turn-off" model with water-soluble ZnCdSe and CdSe QDs simultaneously as the fluorescent probes is established to detect various pesticides. The fluorescence of the two QDs can be quenched by different pesticides with varying degrees, which leads to the differences in positions and intensities of two peaks. By combining with chemometrics methods, all the pesticides can be qualitative and quantitative respectively even in real samples with the limit of detection was 2 × 10(-8) mol L(-1) and a recognition rate of 100%. This work is, to the best of our knowledge, the first report on the detection of pesticides based on the fluorescence quenching phenomenon of double quantum dots combined with chemometrics methods. What's more, the excellent selectivity of the system has been verified in different mediums such as mixed ion disruption, waste water, tea and water extraction liquid drugs. Copyright © 2016 Elsevier B.V. All rights reserved.
International Nuclear Information System (INIS)
Baghramyan, H.M.; Barseghyan, M.G.; Kirakosyan, A.A.; Restrepo, R.L.; Duque, C.A.
2013-01-01
The linear and nonlinear intra-band optical absorption coefficients in GaAs/Ga 1−x Al x As two-dimensional concentric double quantum rings are investigated. Taking into account the combined effects of hydrostatic pressure and aluminum concentration the energies of the ground (n=1,l=0) and the first excited state (n=2,l=1) have been found using the effective mass approximation and the transfer matrix formalism. The energies of these states and the corresponding threshold energy of the intra-band optical transitions are examined as a function of hydrostatic pressure and aluminum concentration for different sizes of the structure. We also investigated the dependencies of the linear, nonlinear, and total optical absorption coefficients as functions of the incident photon energy for different values of hydrostatic pressure, aluminum concentration, sizes of the structure, and incident optical intensity. Its is found that the effects of the hydrostatic pressure and the aluminum concentration lead to a shifting of the resonant peaks of the intra-band optical spectrum. - Highlights: ► Linear and nonlinear intra-band absorption in quantum rings. ► Threshold energy strongly depends on the hydrostatic pressure. ► Threshold energy strongly depends on the stoichiometry and sizes of structure. ► Optical absorption is affected by the incident optical intensity.
Energy Technology Data Exchange (ETDEWEB)
Wang, Jiyin; Huang, Shaoyun, E-mail: hqxu@pku.edu.cn, E-mail: syhuang@pku.edu.cn; Lei, Zijin [Key Laboratory for the Physics and Chemistry of Nanodevices and Department of Electronics, Peking University, Beijing 100871 (China); Pan, Dong; Zhao, Jianhua [State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083 (China); Xu, H. Q., E-mail: hqxu@pku.edu.cn, E-mail: syhuang@pku.edu.cn [Key Laboratory for the Physics and Chemistry of Nanodevices and Department of Electronics, Peking University, Beijing 100871 (China); Division of Solid State Physics, Lund University, Box 118, S-22100 Lund (Sweden)
2016-08-01
We demonstrate direct measurements of the spin-orbit interaction and Landé g factors in a semiconductor nanowire double quantum dot. The device is made from a single-crystal pure-phase InAs nanowire on top of an array of finger gates on a Si/SiO{sub 2} substrate and the measurements are performed in the Pauli spin-blockade regime. It is found that the double quantum dot exhibits a large singlet-triplet energy splitting of Δ{sub ST} ∼ 2.3 meV, a strong spin-orbit interaction of Δ{sub SO} ∼ 140 μeV, and a large and strongly level-dependent Landé g factor of ∼12.5. These results imply that single-crystal pure-phase InAs nanowires are desired semiconductor nanostructures for applications in quantum information technologies.
Energy Technology Data Exchange (ETDEWEB)
Ngaojampa, C.; Nimmanpipug, P. [Computer Simulation and Modeling Laboratory (CSML), Department of Chemistry and Center for Innovation Chemistry, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand); Yu, L.D., E-mail: yuld@fnrf.science.cmu.ac.t [Plasma and Beam Physics Research Facility, Department of Physics and Materials Science, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand); Thailand Center of Excellence in Physics, Commission on Higher Education, 328 Si Ayutthaya Road, Bangkok 10400 (Thailand); Anuntalabhochai, S. [Molecular Biology Laboratory, Department of Biology, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand); Lee, V.S., E-mail: vannajan@gmail.co [Computer Simulation and Modeling Laboratory (CSML), Department of Chemistry and Center for Innovation Chemistry, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand); Thailand Center of Excellence in Physics, Commission on Higher Education, 328 Si Ayutthaya Road, Bangkok 10400 (Thailand)
2011-02-15
In order to promote understanding of the fundamentals of ultra-low-energy ion interaction with DNA, molecular dynamics simulations using combined quantum-mechanics/molecular-mechanics of poly-AT and poly-GC A-DNA double strands irradiated by <200 eV carbon ions were performed to investigate the molecular implications of mutation bias. The simulations were focused on the responses of the DNA backbones and nitrogenous bases to irradiation. Analyses of the root mean square displacements of the backbones and non-hydrogen atoms of base rings of the simulated DNA structure after irradiation revealed a potential preference of DNA double strand separation, dependent on the irradiating energy. The results show that for the backbones, the large difference in the displacement between poly-GC and poly-AT in the initial time period could be the reason for the backbone breakage; for the nitrogenous base pairs, A-T is 30% more sensitive or vulnerable to ion irradiation than G-C, demonstrating a preferential, instead of random, effect of irradiation-induced mutation.
International Nuclear Information System (INIS)
Ngaojampa, C.; Nimmanpipug, P.; Yu, L.D.; Anuntalabhochai, S.; Lee, V.S.
2011-01-01
In order to promote understanding of the fundamentals of ultra-low-energy ion interaction with DNA, molecular dynamics simulations using combined quantum-mechanics/molecular-mechanics of poly-AT and poly-GC A-DNA double strands irradiated by <200 eV carbon ions were performed to investigate the molecular implications of mutation bias. The simulations were focused on the responses of the DNA backbones and nitrogenous bases to irradiation. Analyses of the root mean square displacements of the backbones and non-hydrogen atoms of base rings of the simulated DNA structure after irradiation revealed a potential preference of DNA double strand separation, dependent on the irradiating energy. The results show that for the backbones, the large difference in the displacement between poly-GC and poly-AT in the initial time period could be the reason for the backbone breakage; for the nitrogenous base pairs, A-T is 30% more sensitive or vulnerable to ion irradiation than G-C, demonstrating a preferential, instead of random, effect of irradiation-induced mutation.
Energy Technology Data Exchange (ETDEWEB)
Parani, Sundararajan [University of Madras, Department of Inorganic Chemistry (India); Bupesh, Giridharan [Bharath University, Central Research Laboratory, Sree Balaji Medical College and Hospital (India); Manikandan, Elayaperumal [Thiruvalluvar University, Department of Physics, TUCAS, Thennangur-604408 (India); Pandian, Kannaiyan [University of Madras, Department of Inorganic Chemistry (India); Oluwafemi, Oluwatobi Samuel, E-mail: oluwafemi.oluwatobi@gmail.com [University of Johannesburg, Department of Applied Chemistry (South Africa)
2016-11-15
Water-soluble, mercaptosuccinic acid (MSA)-capped CdTe/CdS/ZnS core/double shell quantum dots (QDs) were prepared by successive growth of CdS and ZnS shells on the as-synthesized CdTe/CdS{sub thin} core/shell quantum dots. The formation of core/double shell structured QDs was investigated by ultraviolet-visible (UV–Vis) absorption and photoluminescence (PL) spectroscopy, PL decay studies, X-ray diffraction (XRD), and X-ray photoelectron spectroscopy (XPS). The core/double shell QDs exhibited good photoluminescence quantum yield (PLQY) which is 70% higher than that of the parent core/shell QDs, and they are stable for months. The average particle size of the core/double shell QDs was ∼3 nm as calculated from the transmission electron microscope (TEM) images. The cytotoxicity of the QDs was evaluated on a variety of cancer cells such as HeLa, MCF-7, A549, and normal Vero cells by 3-(4,5-dimethyl-2-thiazolyl)-2,5-diphenyl-2H-tetrazolium bromide (MTT) cell viability assay. The results showed that core/double shell QDs were less toxic to the cells when compared to the parent core/shell QDs. MCF-7 cells showed proliferation on incubation with QDs, and this is attributed to the metalloestrogenic activity of cadmium ions released from QDs. The core/double shell CdTe/CdS/ZnS (CSS) QDs were conjugated with transferrin and successfully employed for the biolabeling and fluorescent imaging of HeLa cells. These core/double shell QDs are highly promising fluorescent probe for cancer cell labeling and imaging applications.
Quantum particle-number fluctuations in a two-component Bose gas in a double-well potential
International Nuclear Information System (INIS)
Zin, Pawel; Oles, Bartlomiej; Sacha, Krzysztof
2011-01-01
A two-component Bose gas in a double-well potential with repulsive interactions may undergo a phase separation transition if the interspecies interactions outweigh the intraspecies ones. We analyze the transition in the strong interaction limit within the two-mode approximation. Numbers of particles in each potential well are equal and constant. However, at the transition point, the ground state of the system reveals huge fluctuations of numbers of particles belonging to the different gas components; that is, the probability for observation of any mixture of particles in each potential well becomes uniform.
International Nuclear Information System (INIS)
Friedberg, R.; Lee, T.D.
2003-01-01
We present a new and simpler proof for the convergent iterative solution of the one-dimensional degenerate double-well potential. This new proof depends on a general theorem, called the hierarchy theorem, that shows the successive stages in the iteration to form a monotonically increasing sequence of approximations to the energy and to the wavefunction at any point x. This important property makes possible a much simpler proof of convergence than the one given before in the literature. The hierarchy theorem proven in this paper is applicable to a much wider class of potentials which includes the quartic potential
Energy Technology Data Exchange (ETDEWEB)
Rodríguez-Magdaleno, K.A.; Martínez-Orozco, J.C.; Rodríguez-Vargas, I. [Unidad Académica de Física, Universidad Autónoma de Zacatecas, Calz. Solidaridad Esq. Paseo a La Bufa S/N. C.P. 98060 Zacatecas (Mexico); Mora-Ramos, M.E. [Facultad de Ciencias, Universidad Autónoma del Estado de Morelos, Av. Universidad 1001, CP 62209 Cuernavaca, Morelos (Mexico); Física Teórica y Aplicada, Escuela de Ingeniería de Antioquia, AA 7516 Medellín (Colombia); Grupo de Materia Condensada-UdeA, Instituto de Física, Facultad de Ciencias Exactas y Naturales, Universidad de Antioquia UdeA, Calle 70 No. 52-21, Medellín (Colombia); Duque, C.A., E-mail: cduque@fisica.udea.edu.co [Grupo de Materia Condensada-UdeA, Instituto de Física, Facultad de Ciencias Exactas y Naturales, Universidad de Antioquia UdeA, Calle 70 No. 52-21, Medellín (Colombia)
2014-03-15
In this work, the conduction band electron states and the associated intersubband-related linear and nonlinear optical absorption coefficient and relative refractive index change are calculated for an asymmetric double n-type δ-doped quantum well in a GaAs-matrix. The effects of an external applied static electric field are included. Values of the two-dimensional impurities density (N{sub 2d}) of each single δ-doped quantum well are taken to vary within the range of 1.0×10{sup 12} to 7.0×10{sup 12} cm{sup −2}, consistent with the experimental data growth regime. The optical responses are reported as a function of the δ-doped impurities density and the applied electric field. It is shown that single electron states and the related optical quantities are significantly affected by the structural asymmetry of the double δ-doped quantum well system. In addition, a brief comparison with the free-carrier-related optical response is presented. -- Highlights: • Nonlinear optics in asymmetric double n-type δ-doped quantum well in a GaAs-matrix. • The system is considered under external applied electric field in growth direction. • The 2D impurity density is consistent with the experimental data growth regime. • The optical quantities are significantly affected by the structural asymmetry of the system.
International Nuclear Information System (INIS)
Rodríguez-Magdaleno, K.A.; Martínez-Orozco, J.C.; Rodríguez-Vargas, I.; Mora-Ramos, M.E.; Duque, C.A.
2014-01-01
In this work, the conduction band electron states and the associated intersubband-related linear and nonlinear optical absorption coefficient and relative refractive index change are calculated for an asymmetric double n-type δ-doped quantum well in a GaAs-matrix. The effects of an external applied static electric field are included. Values of the two-dimensional impurities density (N 2d ) of each single δ-doped quantum well are taken to vary within the range of 1.0×10 12 to 7.0×10 12 cm −2 , consistent with the experimental data growth regime. The optical responses are reported as a function of the δ-doped impurities density and the applied electric field. It is shown that single electron states and the related optical quantities are significantly affected by the structural asymmetry of the double δ-doped quantum well system. In addition, a brief comparison with the free-carrier-related optical response is presented. -- Highlights: • Nonlinear optics in asymmetric double n-type δ-doped quantum well in a GaAs-matrix. • The system is considered under external applied electric field in growth direction. • The 2D impurity density is consistent with the experimental data growth regime. • The optical quantities are significantly affected by the structural asymmetry of the system
Shadman, Abir; Rahman, Ehsanur; Khosru, Quazi D. M.
2017-11-01
To reduce the thermal budget and the short channel effects in state of the art CMOS technology, Junctionless field effect transistor (JLFET) has been proposed in the literature. Numerous experimental, modeling, and simulation based works have been done on this new FET with bulk materials for various geometries until now. On the other hand, the two-dimensional layered material is considered as an alternative to current Si technology because of its ultra-thin body and high mobility. Very recently few simulation based works have been done on monolayer molybdenum disulfide based JLFET mainly to show the advantage of JLFET over conventional FET. However, no comprehensive simulation-based work has been done for double gate JLFET keeping in mind the prominent transition metal dichalcogenides (TMDC) to the authors' best knowledge. In this work, we have studied quantum ballistic drain current-gate voltage characteristics of such FETs within non-equilibrium Green's function (NEGF) framework. Our simulation results reveal that all these TMDC materials are viable options for implementing state of the art Junctionless MOSFET with emphasis on their performance at short gate lengths. Besides evaluating the prospect of TMDC materials in the digital logic application, the performance of Junctionless Double Gate trilayer TMDC heterostructure FET for the label-free electrical detection of biomolecules in dry environment has been investigated for the first time to the authors' best knowledge. The impact of charge neutral biomolecules on the electrical characteristics of the biosensor has been analyzed under dry environment situation. Our study shows that these materials could provide high sensitivity in the sub-threshold region as a channel material in nano-biosensor, a trend demonstrated by silicon on insulator FET sensor in the literature. Thus, going by the trend of replacing silicon with these novel materials in device level, TMDC heterostructure could be a viable alternative to
Hong, You-Lee; Asakura, Tetsuo; Nishiyama, Yusuke
2018-05-08
β-sheet structure of oligo- and poly-peptides can be formed in anti-parallel (AP)- and parallel (P)-structure, which is the important feature to understand the structures. In principle, P- and AP-β-sheet structures can be identified by the presence (AP) and absence (P) of the interstrand 1HNH/1HNH correlations on a diagonal in 2D 1H double quantum (DQ)/1H single quantum (SQ) spectrum due to the different interstrand 1HNH/1HNH distances between these two arrangements. However, the 1HNH/1HNH peaks overlap to the 1HNH3+/1HNH3+ peaks, which always give cross peaks regardless of the β-sheet arrangement. The 1HNH3+/1HNH3+ peaks disturb the observation of the presence/absence of 1HNH/1HNH correlations and the assignment of 1HNH and 1HNH3+ is not always available. Here, 3D 14N/1H DQ/1H SQ correlation solid-state NMR experiments at fast magic angle spinning (70 kHz) are introduced to distinguish AP and P β-sheet structure. The 14N dimension allows the separate observation of 1HNH/1HNH peaks from 1HNH3+/1HNH3+ peaks with clear assignment of 1HNH and 1HNH3+. In addition, the high natural abundance of 1H and 14N enables 3D 14N/1H DQ/1H SQ experiments of oligo-alanines (Ala3-6) in four hours without any isotope labelling. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
Dehghan, E.; Khoshnoud, D. Sanavi; Naeimi, A. S.
2018-06-01
Aim of this study is to investigate spin transportation in double quantum ring (DQR). We developed an array of DQR to measure the transmission coefficient and analyze the spin transportation through this system in the presence of Rashba spin-orbit interaction (RSOI) and magnetic flux estimated using S-matrix method. In this article, we compute the spin transport and spin-current characteristics numerically as functions of electron energy, angles between the leads, coupling constant of the leads, RSOI, and magnetic flux. Our results suggest that, for typical values of the magnetic flux (ϕ /ϕ0) and Rashba constant (αR), such system can demonstrates many spintronic properties. It is possible to design a new geometry of DQR by incoming electrons polarization in a way to optimize the system to work as a spin-filtering and spin-inverting nano-device with very high efficiency. The results prove that the spin current will strongly modulate with an increase in the magnetic flux and Rashba constant. Moreover it is shown that, when the lead coupling is weak, the perfect spin-inverter does not occur.
Liu, Peng; Zhang, Jingxue; Wang, Dunyou
2017-06-07
A double-inversion mechanism of the F - + CH 3 I reaction was discovered in aqueous solution using combined multi-level quantum mechanics theories and molecular mechanics. The stationary points along the reaction path show very different structures to the ones in the gas phase due to the interactions between the solvent and solute, especially strong hydrogen bonds. An intermediate complex, a minimum on the potential of mean force, was found to serve as a connecting-link between the abstraction-induced inversion transition state and the Walden-inversion transition state. The potentials of mean force were calculated with both the DFT/MM and CCSD(T)/MM levels of theory. Our calculated free energy barrier of the abstraction-induced inversion is 69.5 kcal mol -1 at the CCSD(T)/MM level of theory, which agrees with the one at 72.9 kcal mol -1 calculated using the Born solvation model and gas-phase data; and our calculated free energy barrier of the Walden inversion is 24.2 kcal mol -1 , which agrees very well with the experimental value at 25.2 kcal mol -1 in aqueous solution. The calculations show that the aqueous solution makes significant contributions to the potentials of mean force and exerts a big impact on the molecular-level evolution along the reaction pathway.
Diestler, D J; Jia, D; Manz, J; Yang, Y
2018-03-01
The theory of concerted electronic and nuclear flux densities associated with the vibration and dissociation of a multielectron nonrotating homonuclear diatomic molecule (or ion) in an electronic state 2S+1 Σ g,u + (JM = 00) is presented. The electronic population density, nuclear probability density, and nuclear flux density are isotropic. A theorem of Barth , presented in this issue, shows that the electronic flux density (EFD) is also isotropic. Hence, the evolving system appears as a pulsating, or exploding, "quantum bubble". Application of the theory to Na 2 vibrating in the double-minimum potential of the 2 1 Σ u + (JM = 00) excited state reveals that the EFD consists of two antagonistic components. One arises from electrons that flow essentially coherently with the nuclei. The other, which is oppositely directed (i.e., antagonistic) and more intense, is due to the transition in electronic structure from "Rydberg" to "ionic" type as the nuclei traverse the potential barrier between inner and outer potential wells. This "transition" component of the EFD rises and falls sharply as the nuclei cross the barrier.
International Nuclear Information System (INIS)
Horing, Norman J Morgenstern; Popov, Vyacheslav V
2006-01-01
Recent experimental observations by X.G. Peralta and S.J. Allen, et al. of dc photoconductivity resonances in steady source-drain current subject to terahertz radiation in a grid-gated double-quantum well FET suggested an association with plasmon resonances. This association was definitively confirmed for some parameter ranges in our detailed electrodynamic absorbance calculations. In this paper we propose that the reason that the dc photoconductance resonances match the plasmon resonances in semiconductors is based on a nonlinear dynamic screening mechanism. In this, we employ a shielded potential approximation that is nonlinear in the terahertz field to determine the nonequilibrium Green's function and associated density perturbation that govern the nonequilibrium dielectric polarization of the medium. This 'conditioning' of the system by the incident THz radiation results in resonant polarization response at the plasmon frequencies which, in turn, causes a sharp drop of the resistive shielded impurity scattering potentials and attendant increase of the dc source-drain current. This amounts to disabling the impurity scattering mechanism by plasmon resonant behavior in nonlinear screening
Hu, Min; Wang, Hailong; Gong, Qian; Wang, Shumin
2018-04-01
Within the framework of effective-mass envelope-function theory, the ground state binding energy of a hydrogenic donor impurity is calculated in the InGaAsP/InP concentric double quantum rings (CDQRs) using the plane wave method. The effects of geometry, impurity position, external electric field and alloy composition on binding energy are considered. It is shown that the peak value of the binding energy appears in two rings with large gap as the donor impurity moves along the radial direction. The binding energy reaches the peak value at the center of ring height when the donor impurity moves along the axial direction. The binding energy shows nonlinear variation with the increase of ring height. With the external electric field applied along the z-axis, the binding energy of the donor impurity located at zi ≥ 0 decreases while that located at zi < 0 increases. In addition, the binding energy decreases with increasing Ga composition, but increases with the increasing As composition.
Yamabayashi, Tsutomu; Katoh, Keiichi; Breedlove, Brian K; Yamashita, Masahiro
2017-06-15
Single-molecule magnet (SMM) properties of crystals of a terbium(III)-phthalocyaninato double-decker complex with different molecular packings ( 1 : TbPc₂, 2 : TbPc₂·CH₂Cl₂) were studied to elucidate the relationship between the molecular packing and SMM properties. From single crystal X-ray analyses, the high symmetry of the coordination environment of 2 suggested that the SMM properties were improved. Furthermore, the shorter intermolecular Tb-Tb distance and relative collinear alignment of the magnetic dipole in 2 indicated that the magnetic dipole-dipole interactions were stronger than those in 1 . This was confirmed by using direct current magnetic measurements. From alternating current magnetic measurements, the activation energy for spin reversal for 1 and 2 were similar. However, the relaxation time for 2 is three orders of magnitude slower than that for 1 in the low- T region due to effective suppression of the quantum tunneling of the magnetization. These results suggest that the SMM properties of TbPc₂ highly depend on the molecular packing.
Energy Technology Data Exchange (ETDEWEB)
Tang, Yanqun; Wang, Ruirui; Yang, Ye; Yan, Dongpeng; Xiang, Xu
2016-08-03
The water oxidation half-reaction is considered to be a bottleneck for achieving highly efficient solar-driven water splitting due to its multiproton-coupled four-electron process and sluggish kinetics. Herein, a triadic photoanode consisting of dual-sized CdTe quantum dots (QDs), Co-based layered double hydroxide (LDH) nanosheets, and BiVO4 particles, that is, QD@LDH@BiVO4, was designed. Two sets of consecutive Type-II band alignments were constructed to improve photogenerated electron-hole separation in the triadic structure. The efficient charge separation resulted in a 2-fold enhancement of the photocurrent of the QD@LDH@BiVO4 photoanode. A significantly enhanced oxidation efficiency reaching above 90% in the low bias region (i.e., E < 0.8 V vs RHE) could be critical in determining the overall performance of a complete photoelectrochemical cell. The faradaic efficiency for water oxidation was almost 90%. The conduction band energy of QDs is -1.0 V more negative than that of LDH, favorable for the electron injection to LDH and enabling a more efficient hole separation. The enhanced photon-to-current conversion efficiency and improved water oxidation efficiency of the triadic structure may result from the non-negligible contribution of hot electrons or holes generated in QDs. Such a band-matching and multidimensional triadic architecture could be a promising strategy for achieving high-efficiency photoanodes by sufficiently utilizing and maximizing the functionalities of QDs.
International Nuclear Information System (INIS)
Karabulut, I.; Mora-Ramos, M.E.; Duque, C.A.
2011-01-01
The intersubband electron-related nonlinear optical absorption and nonlinear optical rectification in GaAs-Ga 1-x Al x As asymmetric double quantum wells are studied, under the influence of combined or independent applied electric and magnetic fields as well as hydrostatic pressure. The outcome of the density matrix formalism and the effective mass, and parabolic-band approximations have been considered as main theoretical tools for the description. It is obtained that under particular geometrical conditions, with or without electric and/or magnetic field strength, the optical rectification is null and, simultaneously, in such circumstances the optical absorption has a relative maximum. It is also detected that the influence of the hydrostatic pressure leads to increasing or decreasing behaviors of the nonlinear optical absorption in dependence of the particular regime of pressure values considered, with significant distinction of the cases of opposite electric field orientations. - Highlights: → Maxima of the NOA correspond to zero in the NOR. → Electric fields can couple the double quantum wells. → Hydrostatic pressure can couple the double quantum wells. → NOA can increase/decrease with hydrostatic pressure. → Overlap between wave functions depends on the magnetic field.
Quantum group and quantum symmetry
International Nuclear Information System (INIS)
Chang Zhe.
1994-05-01
This is a self-contained review on the theory of quantum group and its applications to modern physics. A brief introduction is given to the Yang-Baxter equation in integrable quantum field theory and lattice statistical physics. The quantum group is primarily introduced as a systematic method for solving the Yang-Baxter equation. Quantum group theory is presented within the framework of quantum double through quantizing Lie bi-algebra. Both the highest weight and the cyclic representations are investigated for the quantum group and emphasis is laid on the new features of representations for q being a root of unity. Quantum symmetries are explored in selected topics of modern physics. For a Hamiltonian system the quantum symmetry is an enlarged symmetry that maintains invariance of equations of motion and allows a deformation of the Hamiltonian and symplectic form. The configuration space of the integrable lattice model is analyzed in terms of the representation theory of quantum group. By means of constructing the Young operators of quantum group, the Schroedinger equation of the model is transformed to be a set of coupled linear equations that can be solved by the standard method. Quantum symmetry of the minimal model and the WZNW model in conformal field theory is a hidden symmetry expressed in terms of screened vertex operators, and has a deep interplay with the Virasoro algebra. In quantum group approach a complete description for vibrating and rotating diatomic molecules is given. The exact selection rules and wave functions are obtained. The Taylor expansion of the analytic formulas of the approach reproduces the famous Dunham expansion. (author). 133 refs, 20 figs
Quantum well saturable absorber mirror with electrical control of modulation depth
DEFF Research Database (Denmark)
Liu, Xiaomin; Rafailov, Edik U.; Livshits, Daniil
2010-01-01
in the range 2.5–0.5%, as measured by nonlinear reflectivity of 450 fs long laser pulses with 1065 nm central wavelength, in the pump fluence range 1.6–26.7 J /cm2. This electrical control of the modulation depth is achieved by controlling the small-signal loss of the SESAM via quantum-confined Stark effect......We demonstrate a quantum well QW semiconductor saturable absorber mirror SESAM comprising low-temperature grown InGaAs/GaAs QWs incorporated into a p-i-n structure. By applying the reverse bias voltage in the range 0–2 V to the p-i-n structure, we were able to change the SESAM modulation depth...
Spin injection between epitaxial Co2.4Mn1.6Ga and an InGaAs quantum well
DEFF Research Database (Denmark)
Hickey, M.C.; Damsgaard, Christian Danvad; Farrer, I
2005-01-01
Electrical spin injection in a narrow [100] In0.2Ga0.8As quantum well in a GaAs p-i-n optical device is reported. The quantum well is located 300 nm from an AlGaAs Schottky barrier and this system is used to compare the efficiencies and temperature dependences of spin injection from Fe and the He...
Type II InAs/GaAsSb quantum dots: Highly tunable exciton geometry and topology
Energy Technology Data Exchange (ETDEWEB)
Llorens, J. M.; Wewior, L.; Cardozo de Oliveira, E. R.; Alén, B., E-mail: benito.alen@csic.es [IMM-Instituto de Microelectrónica de Madrid (CNM-CSIC), Isaac Newton 8, PTM, E-28760 Tres Cantos, Madrid (Spain); Ulloa, J. M.; Utrilla, A. D.; Guzmán, A.; Hierro, A. [Institute for Systems based on Optoelectronics and Microtechnology (ISOM), Universidad Politécnica de Madrid, Ciudad Universitaria s/n, 28040 Madrid (Spain)
2015-11-02
External control over the electron and hole wavefunctions geometry and topology is investigated in a p-i-n diode embedding a dot-in-a-well InAs/GaAsSb quantum structure with type II band alignment. We find highly tunable exciton dipole moments and largely decoupled exciton recombination and ionization dynamics. We also predicted a bias regime where the hole wavefunction topology changes continuously from quantum dot-like to quantum ring-like as a function of the external bias. All these properties have great potential in advanced electro-optical applications and in the investigation of fundamental spin-orbit phenomena.
Energy Technology Data Exchange (ETDEWEB)
Mora-Ramos, M.E. [Facultad de Ciencias, Universidad Autonoma del Estado de Morelos, Ave. Universidad 1001, CP 62209, Cuernavaca, Morelos, Mexico (Mexico); Instituto de Fisica, Universidad de Antioquia, AA 1226 Medellin (Colombia); Duque, C.A., E-mail: cduque_echeverri@yahoo.es [Instituto de Fisica, Universidad de Antioquia, AA 1226 Medellin (Colombia); Kasapoglu, E.; Sari, H. [Cumhuriyet University, Physics Department, 58140 Sivas (Turkey); Soekmen, I. [Dokuz Eyluel University, Physics Department, 35160 Buca, Izmir (Turkey)
2013-03-15
The combined effects of intense laser radiation and applied electric fields on the intersubband-related linear and nonlinear optical properties in GaAs-based quantum wells are discussed. It is shown that for asymmetric double quantum well, the increasing laser field intensity causes progressive redshifts in the peak positions of the second and third harmonic coefficients. However, the resonant peaks of the nonlinear optical rectification can suffer a blueshift or a redshift, depending on the laser strengths. The same feature appears in the case of the resonant peaks corresponding to the total coefficients of optical absorption and relative change in the refractive index. - Highlights: Black-Right-Pointing-Pointer Nonlinear optical properties in double quantum wells. Black-Right-Pointing-Pointer Increasing laser field intensity causes redshifts in the peak positions. Black-Right-Pointing-Pointer Resonant peak of second order nonlinearities can be blue-shifted. Black-Right-Pointing-Pointer Relative change in refractive index depends of the applied electric field. Black-Right-Pointing-Pointer The energy position depends of the laser field parameter.
Energy Technology Data Exchange (ETDEWEB)
Huebel, A.
2007-11-22
In this work, a double quantum dot system is studied whose two dots are electrically insulated from one another and contacted independently with two leads. The geometry is optimized to maximize the capacitive interaction between the dots. The samples are characterized by electrical transport measurements in a dilution refrigerator. It is then studied at different tunnel couplings how the capacitive interaction influences the electrical transport in equilibrium. Under certain conditions correlated tunnel processes can be observed. A simple model is derived that serves to understand these processes. The double quantum dot system is defined in lateral arrangement by reactive ion etching of a two-dimensional electron system located only 50 nm below the surface of a GaAs-AlGaAs heterostructure. The samples are characterized in a dilution refrigerator at 25 mK near the common pinch-off point of all four tunnel barriers. A measurement of the differential equilibrium conductances of both quantum dots as a function of two gate voltages yields a honeycomb-like charge stability diagram. The most important sample characteristic is the ratio between the interaction capacitance and the total capacitance of a single quantum dot. For the optimized sample, this ratio turns out to be larger than one third near the common pinch-off point, with a single-dot charging energy of up to 800 {mu}eV. At more positive gate voltages, the capacitances between the quantum dots and their leads increase more and more, thereby diminishing the charging energy. It is shown for the optimized sample that all capacitance coefficients except the dot-lead capacitances are constant to within considerable accuracy over several Coulomb blockade oscillations. In order to measure correlated electrical transport in equilibrium, special parameter regions are examined in which the charges of both quantum dots cannot fluctuate independently of each other. An analytical formula is derived that describes the
Energy Technology Data Exchange (ETDEWEB)
Koch, L; Messier, J; Valin, J [Centre d' Etudes Nucleaires de Saclay (France)
1962-04-15
. (author) [Spanish] Los autores describen la experiencia adquirida en el CENS, en lo que se refiere a la deteccion de particulas nucleares por medio de semiconductores. Han estudiado especialmente cierto tipo de detector, de estructura pin. Suponiendo que se trabaje con materiales de igual pureza inicial, este dispositivo presenta, con respecto a los aparatos de estructura corriente pn o npp{sup +}, la ventaja de poseer un mayor volumen sensible. En efecto: a) a igual diferencia de potencial aplicada al cristal, el espesor total de las barreras es mayor; b) a igualdad de la corriente inversa, la maxima diferencia de potencial que admiten es mayor; c) siendo iguales todas las demas condiciones, su capacidad por unidad de superficie es menor y la maxima superficie admisible es, pues, mas elevada. Los autores describen detalladamente ciertos procedimientos que permiten obtener estructuras pin en el silicio, con un espesor de zona intermedia que alcanza a 1 mm. Finalmente, describen algunas aplicaciones de estos detectores, tales como la espectroscopia {alpha} y {gamma}, y la medida de dE/dX en el caso de las particulas relativistas. (author) [Russian] V dannoj rabote govoritsya ob opyte, provedennom v TSentre yadernykh issledovanij v Sakle, v oblasti obnaruzheniya yadernykh chastits s pomoshch'yu poluprovodnikov. V chastnosti, izuchalsya tip detektora s perekhodom p-i-n. Po sravneniyu s obychnymi perekhodami p-n ili npp{sup +} i pri uslovii ravnoj chistoty iskhodnogo materiala, ehtot perekhod imeet preimushchestvo, zaklyuchayushcheesya v bolee vysokoj chuvstvitel'nosti ; dejstvitel'no: 1) pri ravnoj raznosti potentsialov, prilozhennoj k kristallu, samym vazhnym yavlyaetsya obshchaya tolshchina bar'erov; 2) pri ravnom obratnom toke maksimal'naya raznost' potentsialov, kotoruyu oni vyderzhivayut, bolee vysoka; 3) pri drugikh ravnykh velichinakh ikh emkost' na edinitsu poverkhnosti nizhe, a maksimal'no dopustimaya poverkhnost' vyshe. V rabote podrobno opisyvayutsya nekotorye
Energy Technology Data Exchange (ETDEWEB)
Baghramyan, H.M. [Department of Solid State Physics, Yerevan State University, Alex Manoogian 1, 0025 Yerevan (Armenia); Barseghyan, M.G., E-mail: mbarsegh@ysu.am [Department of Solid State Physics, Yerevan State University, Alex Manoogian 1, 0025 Yerevan (Armenia); Kirakosyan, A.A. [Department of Solid State Physics, Yerevan State University, Alex Manoogian 1, 0025 Yerevan (Armenia); Laroze, D. [Instituto de Alta Investigación, Universidad de Tarapacá, Casilla 7D, Arica (Chile); Duque, C.A. [Grupo de Materia Condensada-UdeA, Instituto de Física, Facultad de Ciencias Exactas y Naturales, Universidad de Antioquia UdeA, Calle 70 No. 52-21, Medellín (Colombia)
2014-09-15
The donor-impurity related photoionization cross section in GaAs/Ga{sub 1−x}Al{sub x}As three-dimensional concentric double quantum rings is investigated. The photoionization cross section dependence on the incident photon energy is studied considering the effects of hydrostatic pressure, variations of aluminum concentration, geometries of the structure, and impurity position. The interpretation of the dipole matrix element, which reflects the photoionization probability, is also given. We have found that these parameters can lead to both redshift and blueshift of the photoionization spectrum and also influence the cross section peak value.
Energy Technology Data Exchange (ETDEWEB)
Odhiambo Oyoko, H. [Department of Physics, Westville Campus, University of KwaZulu-Natal, Private Bag X 54001, Durban 4000 (South Africa); Porras-Montenegro, N. [Departamento de Fisica, Universidad del Valle, AA 25360, Cali (Colombia); Lopez, S.Y. [Facultad de Educacion, Universidad de Antioquia, AA 1226, Medellin (Colombia); Duque, C.A. [Instituto de Fisica, Universidad de Antioquia, AA 1226, Medellin (Colombia)
2007-07-01
Using a variational technique within the effective mass approximation we have carried out a comparative study of the effect of hydrostatic pressure and temperature on the shallow-impurity related optical absorption spectra in GaAs-Ga{sub 1-x}Al{sub x}As single and double quantum wells. The results show a pressure dependent read-shift and a temperature dependent blue-shift in the optical absorption spectra. (copyright 2007 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)
Energy Technology Data Exchange (ETDEWEB)
Miranda, Guillermo L. [Fisica Teorica y Aplicada, Escuela de Ingenieria de Antioquia, A.A. 7516, Medellin (Colombia); Mora-Ramos, M.E. [Facultad de Ciencias, Universidad Autonoma del Estado de Morelos, Av. Universidad 1001, C.P. 62209, Cuernavaca, Morelos (Mexico); Duque, C.A., E-mail: cduque_echeverri@yahoo.es [Instituto de Fisica, Universidad de Antioquia, AA 1226, Medellin (Colombia)
2012-10-15
The dependencies of the binding energies of the lowest four 1s-like exciton states in GaAs-(Ga,Al)As coupled double quantum wells (CDQW) on the geometric parameters of the system are theoretically studied. A variational approach, together with the parabolic band and effective mass approximations, were considered in order to perform the numerical calculations. It is shown that in the case of a symmetric system there is a degeneracy between the heavy-hole even and odd states and this degeneracy can be removed by the presence of a sufficiently narrow middle barrier. In contrast to this fact, the electron even and odd states are never degenerated. It is detected that, if the system is asymmetric, there will appear binding energies anticrossings between the heavy-hole states at the point of the asymmetric {yields} symmetric QW transition. - Highlights: Black-Right-Pointing-Pointer Study of 1s-like exciton states in double quantum wells. Black-Right-Pointing-Pointer Binding energy decreases with the presence of second well. Black-Right-Pointing-Pointer Binding energy of (2,2) state can be larger than (1,1) state. Black-Right-Pointing-Pointer Central barrier can remove degeneracy of states. Black-Right-Pointing-Pointer Anticrossing between states can be induced via symmetries.
Kendon, Vivien M; Nemoto, Kae; Munro, William J
2010-08-13
We briefly review what a quantum computer is, what it promises to do for us and why it is so hard to build one. Among the first applications anticipated to bear fruit is the quantum simulation of quantum systems. While most quantum computation is an extension of classical digital computation, quantum simulation differs fundamentally in how the data are encoded in the quantum computer. To perform a quantum simulation, the Hilbert space of the system to be simulated is mapped directly onto the Hilbert space of the (logical) qubits in the quantum computer. This type of direct correspondence is how data are encoded in a classical analogue computer. There is no binary encoding, and increasing precision becomes exponentially costly: an extra bit of precision doubles the size of the computer. This has important consequences for both the precision and error-correction requirements of quantum simulation, and significant open questions remain about its practicality. It also means that the quantum version of analogue computers, continuous-variable quantum computers, becomes an equally efficient architecture for quantum simulation. Lessons from past use of classical analogue computers can help us to build better quantum simulators in future.
Energy Technology Data Exchange (ETDEWEB)
Dakhlaoui, Hassen [Department of Physics, College of Science for Girls, University of Dammam (UOD), Saudi Arabia and Department of Physics, Faculty of Sciences of Bizerte, University of Carthage (Tunisia)
2015-04-07
In the present paper, the linear and nonlinear optical absorption coefficients and refractive index changes between the ground and the first excited states in double GaN/Al{sub x}Ga{sub (1−x)}N quantum wells are studied theoretically. The electronic energy levels and their corresponding wave functions are obtained by solving Schrödinger-Poisson equations self-consistently within the effective mass approximation. The obtained results show that the optical absorption coefficients and refractive index changes can be red- and blue-shifted through varying the left quantum well width and the aluminum concentration x{sub b2} of the central barrier, respectively. These structural parameters are found to present optimum values for carrying out the transition of 0.8 eV (1.55 μm). Furthermore, we show that the desired transition can also be achieved by replacing the GaN in the left quantum well with Al{sub y}Ga{sub (1−y)}N and by varying the aluminum concentration y{sub Al}. The obtained results give a new degree of freedom in optoelectronic device applications such as optical fiber telecommunications operating at (1.55 μm)
Coherent Quantum Control of Multidimensional Vibrational Spectroscopy
National Research Council Canada - National Science Library
Mukamel, Shaul; Sanda, Frantisek; Harbola, Upendra; Venkatramani, Ravi; Varonine, Dmitri
2006-01-01
.... Factorial moments of photon counting statistics from a single molecule coupled to a quantum bath were expressed in terms of multipoint quantum correlation functions and represented by double-sided Feynman diagrams...
National Research Council Canada - National Science Library
Agarwal, G. S
2013-01-01
.... Focusing on applications of quantum optics, the textbook covers recent developments such as engineering of quantum states, quantum optics on a chip, nano-mechanical mirrors, quantum entanglement...
Quantum cluster algebra structures on quantum nilpotent algebras
Goodearl, K R
2017-01-01
All algebras in a very large, axiomatically defined class of quantum nilpotent algebras are proved to possess quantum cluster algebra structures under mild conditions. Furthermore, it is shown that these quantum cluster algebras always equal the corresponding upper quantum cluster algebras. Previous approaches to these problems for the construction of (quantum) cluster algebra structures on (quantized) coordinate rings arising in Lie theory were done on a case by case basis relying on the combinatorics of each concrete family. The results of the paper have a broad range of applications to these problems, including the construction of quantum cluster algebra structures on quantum unipotent groups and quantum double Bruhat cells (the Berenstein-Zelevinsky conjecture), and treat these problems from a unified perspective. All such applications also establish equality between the constructed quantum cluster algebras and their upper counterparts.
Energy Technology Data Exchange (ETDEWEB)
Baghramyan, H.M.; Barseghyan, M.G.; Kirakosyan, A.A. [Department of Solid State Physics, Yerevan State University, Al. Manookian 1, 0025 Yerevan (Armenia); Restrepo, R.L. [Física Teórica y Aplicada, Escuela de Ingeniería de Antioquia, AA 7516, Medellín (Colombia); Grupo de Materia Condensada-UdeA, Instituto de Física, Facultadde Ciencias Exactas y Naturales, Universidad de Antioquia UdeA, Calle 70 No. 52-21,Medellín (Colombia); Mora-Ramos, M.E. [Grupo de Materia Condensada-UdeA, Instituto de Física, Facultadde Ciencias Exactas y Naturales, Universidad de Antioquia UdeA, Calle 70 No. 52-21,Medellín (Colombia); Facultad de Ciencias, Universidad Autónoma del Estado de Morelos, Av. Universidad 1001, CP 62209, Cuernavaca, Morelos (Mexico); Duque, C.A., E-mail: cduque@fisica.udea.edu.co [Grupo de Materia Condensada-UdeA, Instituto de Física, Facultadde Ciencias Exactas y Naturales, Universidad de Antioquia UdeA, Calle 70 No. 52-21,Medellín (Colombia)
2014-01-15
The linear and nonlinear optical absorption associated with the transition between 1s and 2s states corresponding to the electron-donor-impurity complex in GaAs/Ga{sub 1−x}Al{sub x}As three-dimensional concentric double quantum rings are investigated. Taking into account the combined effects of hydrostatic pressure and the variation of the aluminum concentration, the energies of the ground and first excited s-like states of a donor impurity in such a system have been calculated using the effective mass approximation and a variational method. The energies of these states and the corresponding threshold energy of the optical transitions are examined as functions of hydrostatic pressure, aluminum concentration, radial impurity position, as well as the geometrical dimensions of the structure. The dependencies of the linear, nonlinear and total optical absorption coefficients as functions of the incident photon energy are investigated for different values of those mentioned parameters. It is found that the influences mentioned above lead to either redshifts or blueshifts of the resonant peaks of the optical absorption spectrum. It is particularly discussed the unusual property exhibited by the third-order nonlinear of becoming positive for photon energies below the resonant transition one. It is shown that this phenomenon is associated with the particular features of the system under study, which determine the values of the electric dipole moment matrix elements. -- Highlights: • Intra-band optical absorption associated to impurity states in double quantum rings. • Combined effects of hydrostatic pressure and aluminum concentration are studied. • The influences mentioned above lead to shifts of resonant peaks. • It is discussed an unusual property exhibited by the third-order nonlinear absorption.
International Nuclear Information System (INIS)
Baghramyan, H.M.; Barseghyan, M.G.; Kirakosyan, A.A.; Restrepo, R.L.; Mora-Ramos, M.E.; Duque, C.A.
2014-01-01
The linear and nonlinear optical absorption associated with the transition between 1s and 2s states corresponding to the electron-donor-impurity complex in GaAs/Ga 1−x Al x As three-dimensional concentric double quantum rings are investigated. Taking into account the combined effects of hydrostatic pressure and the variation of the aluminum concentration, the energies of the ground and first excited s-like states of a donor impurity in such a system have been calculated using the effective mass approximation and a variational method. The energies of these states and the corresponding threshold energy of the optical transitions are examined as functions of hydrostatic pressure, aluminum concentration, radial impurity position, as well as the geometrical dimensions of the structure. The dependencies of the linear, nonlinear and total optical absorption coefficients as functions of the incident photon energy are investigated for different values of those mentioned parameters. It is found that the influences mentioned above lead to either redshifts or blueshifts of the resonant peaks of the optical absorption spectrum. It is particularly discussed the unusual property exhibited by the third-order nonlinear of becoming positive for photon energies below the resonant transition one. It is shown that this phenomenon is associated with the particular features of the system under study, which determine the values of the electric dipole moment matrix elements. -- Highlights: • Intra-band optical absorption associated to impurity states in double quantum rings. • Combined effects of hydrostatic pressure and aluminum concentration are studied. • The influences mentioned above lead to shifts of resonant peaks. • It is discussed an unusual property exhibited by the third-order nonlinear absorption
Energy Technology Data Exchange (ETDEWEB)
Baghramyan, H.M. [Department of Solid State Physics, Yerevan State University, Al. Manookian 1, 0025 Yerevan (Armenia); Barseghyan, M.G., E-mail: mbarsegh@ysu.am [Department of Solid State Physics, Yerevan State University, Al. Manookian 1, 0025 Yerevan (Armenia); Kirakosyan, A.A. [Department of Solid State Physics, Yerevan State University, Al. Manookian 1, 0025 Yerevan (Armenia); Restrepo, R.L. [Escuela de Ingenieria de Antioquia, AA 7516 Medellin (Colombia); Duque, C.A. [Instituto de Fisica, Universidad de Antioquia, AA 1226 Medellin (Colombia)
2013-02-15
The linear and nonlinear intra-band optical absorption coefficients in GaAs/Ga{sub 1-x}Al{sub x}As two-dimensional concentric double quantum rings are investigated. Taking into account the combined effects of hydrostatic pressure and aluminum concentration the energies of the ground (n=1,l=0) and the first excited state (n=2,l=1) have been found using the effective mass approximation and the transfer matrix formalism. The energies of these states and the corresponding threshold energy of the intra-band optical transitions are examined as a function of hydrostatic pressure and aluminum concentration for different sizes of the structure. We also investigated the dependencies of the linear, nonlinear, and total optical absorption coefficients as functions of the incident photon energy for different values of hydrostatic pressure, aluminum concentration, sizes of the structure, and incident optical intensity. Its is found that the effects of the hydrostatic pressure and the aluminum concentration lead to a shifting of the resonant peaks of the intra-band optical spectrum. - Highlights: Black-Right-Pointing-Pointer Linear and nonlinear intra-band absorption in quantum rings. Black-Right-Pointing-Pointer Threshold energy strongly depends on the hydrostatic pressure. Black-Right-Pointing-Pointer Threshold energy strongly depends on the stoichiometry and sizes of structure. Black-Right-Pointing-Pointer Optical absorption is affected by the incident optical intensity.
Lee, Jaehoon; Wilczek, Frank
2013-11-27
Motivated by the problem of identifying Majorana mode operators at junctions, we analyze a basic algebraic structure leading to a doubled spectrum. For general (nonlinear) interactions the emergent mode creation operator is highly nonlinear in the original effective mode operators, and therefore also in the underlying electron creation and destruction operators. This phenomenon could open up new possibilities for controlled dynamical manipulation of the modes. We briefly compare and contrast related issues in the Pfaffian quantum Hall state.
Energy Technology Data Exchange (ETDEWEB)
Schroer, Bert
2006-04-15
The holographic encoding is generalized to subalgebras of QFT localized in double cones. It is shown that as a result of this radically different spacetime encoding the modular group acts geometrically on the holographic image. As a result we obtain a formula for localization entropy which is identical to the previously derived formula for the wedge-localized subalgebra. The symmetry group in the holographic encoding turns out to be the Bondi-Metzner-Sachs group. (author)
Quantum Erasure: Quantum Interference Revisited
Walborn, Stephen P.; Cunha, Marcelo O. Terra; Pádua, Sebastião; Monken, Carlos H.
2005-01-01
Recent experiments in quantum optics have shed light on the foundations of quantum physics. Quantum erasers - modified quantum interference experiments - show that quantum entanglement is responsible for the complementarity principle.
Physics of Quantum Structures in Photovoltaic Devices
Raffaelle, Ryne P.; Andersen, John D.
2005-01-01
There has been considerable activity recently regarding the possibilities of using various nanostructures and nanomaterials to improve photovoltaic conversion of solar energy. Recent theoretical results indicate that dramatic improvements in device efficiency may be attainable through the use of three-dimensional arrays of zero-dimensional conductors (i.e., quantum dots) in an ordinary p-i-n solar cell structure. Quantum dots and other nanostructured materials may also prove to have some benefits in terms of temperature coefficients and radiation degradation associated with space solar cells. Two-dimensional semiconductor superlattices have already demonstrated some advantages in this regard. It has also recently been demonstrated that semiconducting quantum dots can also be used to improve conversion efficiencies in polymeric thin film solar cells. Improvement in thin film cells utilizing conjugated polymers has also be achieved through the use of one-dimensional quantum structures such as carbon nanotubes. It is believed that carbon nanotubes may contribute to both the disassociation as well as the carrier transport in the conjugated polymers used in certain thin film photovoltaic cells. In this paper we will review the underlying physics governing some of the new photovoltaic nanostructures being pursued, as well as the the current methods being employed to produce III-V, II-VI, and even chalcopyrite-based nanomaterials and nanostructures for solar cells.
International Nuclear Information System (INIS)
Loginova, Y.F.; Dezhurov, S.V.; Zherdeva, V.V.; Kazachkina, N.I.; Wakstein, M.S.; Savitsky, A.P.
2012-01-01
Highlights: ► New QDs coated with combination of polythiol ligands and silica shell were synthesized. ► We examine the QDs stability in digestive tract of mice after per os administration. ► The polymer/silica shell prevents QDs degradation and fluorescence quenching in vivo. -- Abstract: CdSe-core, ZnS-capped semiconductor quantum dots (QDs) are of great potential for biomedical applications. However, applications in the gastrointestinal tract for in vivo imaging and therapeutic purposes are hampered by their sensitivity to acidic environments and potential toxicity. Here we report the use of coatings with a combination of polythiol ligands and silica shell (QDs PolyT–APS) to stabilize QDs fluorescence under acidic conditions. We demonstrated the stability of water-soluble QDs PolyT–APS both in vitro, in strong acidic solutions, and in vivo. The biodistribution, stability and photoluminescence properties of QDs in the gastrointestinal tract of mice after per os administration were assessed. We demonstrated that QDs coated with current traditional materials – mercapto compounds (QDs MPA) and pendant thiol group (QDs PolyT) – are not capable of protecting QDs from chemically induced degradation and surface modification. Polythiol ligands and silica shell quantum dots (QDs PolyT–APS) are suitable for biological and biomedical applications in the gastrointestinal tract.
Guo, Jinxue; Li, Xiaoyan; Sun, Yanfang; Liu, Qingyun; Quan, Zhenlan; Zhang, Xiao
2018-06-01
Development of noble-metal-free catalysts towards highly efficient electrochemical oxygen evolution reaction (OER) is critical but challenging in the renewable energy area. Herein, we firstly embed NiFe LDHs quantum dots (QDs) into expanded graphite (NiFe LDHs/EG) via in-situ confined formation process. The interlayer spacing of EG layers acts as nanoreactors for spatially confined formation of NiFe LDHs QDs. The QDs supply huge catalytic sites for OER. The in-situ decoration endows the strong affinity between QDs with EG, thus inducing fast charge transfer. Based on the aforementioned benefits, the designed catalyst exhibits outstanding OER properties, in terms of small overpotential (220 mV required to generate 10 mA cm-2), low Tafel slope, and good durable stability, making it a promising candidate for inexpensive OER catalyst.
International Nuclear Information System (INIS)
Menon, P.S.; Kandiah, K.; Burhanuddin Yeop Majlis; Shaari, S.
2011-01-01
Long-wavelength vertical-cavity surface-emitting lasers (LW-VCSELs) have profound advantages compared to traditional edge-emitting lasers offering improved properties with respect to mode selectivity, fibre coupling, threshold currents and integration into 2D arrays or with other electronic devices. Its commercialization is gaining momentum as the local and access network in optical communication system expand. Numerical modeling of LW-VCSEL utilizing wafer-fused InP-based multi-quantum wells (MQW) and GaAs-based distributed Bragg reflectors (DBRs) is presented in this paper. Emphasis is on the device and mesa/pillar diameter design parameter comparison and its effect on the device characteristics. (author)
Double universe and the arrow of time
Energy Technology Data Exchange (ETDEWEB)
Alfinito, Eleonora [Dipartimento di Ingegneria dell' Innovazione, Universitta di Lecce, 73100 Lecce and CNISM-Consorzio Nazionale Interuniversitario per le Scienze Fisiche della Materia. Universita di Lecce (Italy); Vitiello, Giuseppe [Dipartimento di Fisica, Universita di Salerno, and INFN Gruppo Collegato di Salerno, 84100 Salerno (Italy)
2007-05-15
The canonical quantum field theory formalism for the expanding geometry universe leads to the 'Double Universe' scenario envisaged by quantum loop gravity. Thermal properties of inflating universe and the classicality of the time-evolution trajectories in the space of the representations of the canonical commutation relations are also discussed.
Arias-Hernández, L. A.; Morales-Serrano, A. F.
2002-11-01
In this work we follow the Bender et al paper [1] to study the quantum analogues of the Stirling and Ericsson polytropic cycles. In the context of the classical thermodynamics, the Stirling and Ericsson cycles correspond to reversible heat engines with two isothermal processes joined by two polytropic branches which occur in a device called regenerator. If this device is an ideal one, the efficiency of these cycles is the Carnot efficiency. Here, we introduce the quantum analogues of the Stirling and Ericsson cycles, the first one based on a double square potential well with a finite potential barrier, since in this system the tunnel effect could be the analogue to the regeneration classical process, therefore the isochoric quantum branches would really correspond to an internal energy storage, and the last one with an unknown system where the isobaric quantum processes don't induce changes in its quantum state. With these systems the quantum engines have cycles consisting of polytropic and isothermal quantum processes analogues to the corresponding classical processes. We show that in both cases the quantum cycles have an efficiency given by ηCQM = 1 - EC/EH, which is the same expression for the quantum analogue of the Carnot cycle studied by Bender.
National Research Council Canada - National Science Library
Agarwal, G. S
2013-01-01
..., quantum metrology, spin squeezing, control of decoherence and many other key topics. Readers are guided through the principles of quantum optics and their uses in a wide variety of areas including quantum information science and quantum mechanics...
Quantum cluster algebras and quantum nilpotent algebras
Goodearl, Kenneth R.; Yakimov, Milen T.
2014-01-01
A major direction in the theory of cluster algebras is to construct (quantum) cluster algebra structures on the (quantized) coordinate rings of various families of varieties arising in Lie theory. We prove that all algebras in a very large axiomatically defined class of noncommutative algebras possess canonical quantum cluster algebra structures. Furthermore, they coincide with the corresponding upper quantum cluster algebras. We also establish analogs of these results for a large class of Poisson nilpotent algebras. Many important families of coordinate rings are subsumed in the class we are covering, which leads to a broad range of applications of the general results to the above-mentioned types of problems. As a consequence, we prove the Berenstein–Zelevinsky conjecture [Berenstein A, Zelevinsky A (2005) Adv Math 195:405–455] for the quantized coordinate rings of double Bruhat cells and construct quantum cluster algebra structures on all quantum unipotent groups, extending the theorem of Geiß et al. [Geiß C, et al. (2013) Selecta Math 19:337–397] for the case of symmetric Kac–Moody groups. Moreover, we prove that the upper cluster algebras of Berenstein et al. [Berenstein A, et al. (2005) Duke Math J 126:1–52] associated with double Bruhat cells coincide with the corresponding cluster algebras. PMID:24982197
International Nuclear Information System (INIS)
Masiello, David J.; Reinhardt, William P.
2007-01-01
A time-dependent multiconfigurational self-consistent field theory is presented to describe the many-body dynamics of a gas of identical bosonic atoms confined to an external trapping potential at zero temperature from first principles. A set of generalized evolution equations are developed, through the time-dependent variational principle, which account for the complete and self-consistent coupling between the expansion coefficients of each configuration and the underlying one-body wave functions within a restricted two state Fock space basis that includes the full effects of the condensate's mean field as well as atomic correlation. The resulting dynamical equations are a classical Hamiltonian system and, by construction, form a well-defined initial value problem. They are implemented in an efficient numerical algorithm. An example is presented, highlighting the generality of the theory, in which the ballistic expansion of a fragmented condensate ground state is compared to that of a macroscopic quantum superposition state, taken here to be a highly entangled number state, upon releasing the external trapping potential. Strikingly different many-body matter-wave dynamics emerge in each case, accentuating the role of both atomic correlation and mean-field effects in the two condensate states
Hobson, Art
2011-01-01
An earlier paper introduces quantum physics by means of four experiments: Youngs double-slit interference experiment using (1) a light beam, (2) a low-intensity light beam with time-lapse photography, (3) an electron beam, and (4) a low-intensity electron beam with time-lapse photography. It's ironic that, although these experiments demonstrate…
International Nuclear Information System (INIS)
Xiang Guo-Yong; Guo Guang-Can
2013-01-01
The statistical error is ineluctable in any measurement. Quantum techniques, especially with the development of quantum information, can help us squeeze the statistical error and enhance the precision of measurement. In a quantum system, there are some quantum parameters, such as the quantum state, quantum operator, and quantum dimension, which have no classical counterparts. So quantum metrology deals with not only the traditional parameters, but also the quantum parameters. Quantum metrology includes two important parts: measuring the physical parameters with a precision beating the classical physics limit and measuring the quantum parameters precisely. In this review, we will introduce how quantum characters (e.g., squeezed state and quantum entanglement) yield a higher precision, what the research areas are scientists most interesting in, and what the development status of quantum metrology and its perspectives are. (topical review - quantum information)
Hidden worlds in quantum physics
Gouesbet, Gérard
2014-01-01
The past decade has witnessed a resurgence in research and interest in the areas of quantum computation and entanglement. This new book addresses the hidden worlds or variables of quantum physics. Author Gérard Gouesbet studied and worked with a former student of Louis de Broglie, a pioneer of quantum physics. His presentation emphasizes the history and philosophical foundations of physics, areas that will interest lay readers as well as professionals and advanced undergraduate and graduate students of quantum physics. The introduction is succeeded by chapters offering background on relevant concepts in classical and quantum mechanics, a brief history of causal theories, and examinations of the double solution, pilot wave, and other hidden-variables theories. Additional topics include proofs of possibility and impossibility, contextuality, non-locality, classification of hidden-variables theories, and stochastic quantum mechanics. The final section discusses how to gain a genuine understanding of quantum mec...
Latosińska, J N; Latosińska, M; Seliger, J; Žagar, V; Maurin, J K; Kazimierczuk, Z
2012-02-09
Isothioureas, inhibitors of nitric oxide synthases, have been studied experimentally in solid state by nuclear quadrupole double resonance (NQDR) and X-ray methods and theoretically by the quantum theory of atoms in molecules/density functional theory. Resonance frequencies on (14)N have been detected and assigned to particular nitrogen sites in each molecule. The crystal packings of (S)-3,4-dichlorobenzyl-N-methylisothiouronium chloride with the disordered chlorine positions in benzene ring and (S)-butyloisothiouronium bromide have been resolved in X-ray diffraction studies. (14)N NQDR spectra have been found good indicators of isomer type and strength of intra- or intermolecular N-H···X (X = Cl, Br) interactions. From among all salts studied, only for (S)-2,3,4,5,6-pentabromobenzylisothiouronium chloride are both nitrogen sites equivalent, which has been explained by the slow exchange. This unique structural feature can be a key factor in the high biological activity of (S)-2,3,4,5,6-pentabromobenzylisothiouronium salts.
Quantum Distinction: Quantum Distinctiones!
Zeps, Dainis
2009-01-01
10 pages; How many distinctions, in Latin, quantum distinctiones. We suggest approach of anthropic principle based on anthropic reference system which should be applied equally both in theoretical physics and in mathematics. We come to principle that within reference system of life subject of mathematics (that of thinking) should be equated with subject of physics (that of nature). For this reason we enter notions of series of distinctions, quantum distinction, and argue that quantum distinct...
Quantum information processing : science & technology.
Energy Technology Data Exchange (ETDEWEB)
Horton, Rebecca; Carroll, Malcolm S.; Tarman, Thomas David
2010-09-01
Qubits demonstrated using GaAs double quantum dots (DQD). The qubit basis states are the (1) singlet and (2) triplet stationary states. Long spin decoherence times in silicon spurs translation of GaAs qubit in to silicon. In the near term the goals are: (1) Develop surface gate enhancement mode double quantum dots (MOS & strained-Si/SiGe) to demonstrate few electrons and spin read-out and to examine impurity doped quantum-dots as an alternative architecture; (2) Use mobility, C-V, ESR, quantum dot performance & modeling to feedback and improve upon processing, this includes development of atomic precision fabrication at SNL; (3) Examine integrated electronics approaches to RF-SET; (4) Use combinations of numerical packages for multi-scale simulation of quantum dot systems (NEMO3D, EMT, TCAD, SPICE); and (5) Continue micro-architecture evaluation for different device and transport architectures.
From quantum dots to quantum circuits
International Nuclear Information System (INIS)
Ensslin, K.
2008-01-01
Full text: Quantum dots, or artificial atoms, confine charge carriers in three-dimensional islands in a semiconductor environment. Detailed understanding and exquisite control of the charge and spin state of the electrically tunable charge occupancy have been demonstrated over the years. Quantum dots with best quality for transport experiments are usually realized in n-type AlGaAs/GaAs heterostructures. Novel material systems, such as graphene, nanowires and p-type heterostructures offer unexplored parameter regimes in view of spin-orbit interactions, carrier-carrier interactions and hyperfine coupling between electron and nuclear spins, which might be relevant for future spin qubits realized in quantum dots. With more sophisticated nanotechnology it has become possible to fabricate coupled quantum systems where classical and quantum mechanical coupling and back action is experimentally investigated. A narrow constriction, or quantum point contact, in vicinity to a quantum dot has been shown to serve as a minimally invasive sensor of the charge state of the dot. If charge transport through the quantum dot is slow enough (kHz), the charge sensor allows the detection of time-resolved transport through quantum-confined structures. This has allowed us to measure extremely small currents not detectable with conventional electronics. In addition the full statistics of current fluctuations becomes experimentally accessible. This way correlations between electrons which influence the current flow can be analyzed by measuring the noise and higher moments of the distribution of current fluctuations. Mesoscopic conductors driven out of equilibrium can emit photons which may be detected by another nearby quantum system with suitably tuned energy levels. This way an on-chip microwave single photon detector has been realized. In a ring geometry containing a tunable double quantum dot it has been possible to measure the self-interference of individual electrons as they traverse
Elsaesser, Thomas; Kievit, Robert; Simons, Jan
1994-01-01
Double Trouble highlights the career of Dutch scriptwriter and television producer Chiem van Houweninge, well-known for his long-running TV comedy series and as author of episodes for TV detective series. Double Trouble gives Van Houweninge's own views on writing and filming in television prime
Quantum walks, quantum gates, and quantum computers
International Nuclear Information System (INIS)
Hines, Andrew P.; Stamp, P. C. E.
2007-01-01
The physics of quantum walks on graphs is formulated in Hamiltonian language, both for simple quantum walks and for composite walks, where extra discrete degrees of freedom live at each node of the graph. It is shown how to map between quantum walk Hamiltonians and Hamiltonians for qubit systems and quantum circuits; this is done for both single-excitation and multiexcitation encodings. Specific examples of spin chains, as well as static and dynamic systems of qubits, are mapped to quantum walks, and walks on hyperlattices and hypercubes are mapped to various gate systems. We also show how to map a quantum circuit performing the quantum Fourier transform, the key element of Shor's algorithm, to a quantum walk system doing the same. The results herein are an essential preliminary to a Hamiltonian formulation of quantum walks in which coupling to a dynamic quantum environment is included
International Nuclear Information System (INIS)
Asshoff, P.; Loeffler, W.; Fluegge, H.; Zimmer, J.; Mueller, J.; Westenfelder, B.; Hu, D. Z.; Schaadt, D. M.; Kalt, H.; Hetterich, M.
2010-01-01
We present time-resolved studies of the spin polarization dynamics during and after initialization through pulsed electrical spin injection into InGaAs quantum dots embedded in a p-i-n-type spin-injection light-emitting diode. Experiments are performed with pulse widths in the nanosecond range and a time-resolved single photon counting setup is used to detect the subsequent electroluminescence. We find evidence that the achieved spin polarization shows an unexpected temporal behavior, attributed mainly to many-carrier and non-equilibrium effects in the device.
Le Gouët, Jean-Louis; Moiseev, Sergey
2012-06-01
Interaction of quantum radiation with multi-particle ensembles has sparked off intense research efforts during the past decade. Emblematic of this field is the quantum memory scheme, where a quantum state of light is mapped onto an ensemble of atoms and then recovered in its original shape. While opening new access to the basics of light-atom interaction, quantum memory also appears as a key element for information processing applications, such as linear optics quantum computation and long-distance quantum communication via quantum repeaters. Not surprisingly, it is far from trivial to practically recover a stored quantum state of light and, although impressive progress has already been accomplished, researchers are still struggling to reach this ambitious objective. This special issue provides an account of the state-of-the-art in a fast-moving research area that makes physicists, engineers and chemists work together at the forefront of their discipline, involving quantum fields and atoms in different media, magnetic resonance techniques and material science. Various strategies have been considered to store and retrieve quantum light. The explored designs belong to three main—while still overlapping—classes. In architectures derived from photon echo, information is mapped over the spectral components of inhomogeneously broadened absorption bands, such as those encountered in rare earth ion doped crystals and atomic gases in external gradient magnetic field. Protocols based on electromagnetic induced transparency also rely on resonant excitation and are ideally suited to the homogeneous absorption lines offered by laser cooled atomic clouds or ion Coulomb crystals. Finally off-resonance approaches are illustrated by Faraday and Raman processes. Coupling with an optical cavity may enhance the storage process, even for negligibly small atom number. Multiple scattering is also proposed as a way to enlarge the quantum interaction distance of light with matter. The
Quantum interference of electrically generated single photons from a quantum dot.
Patel, Raj B; Bennett, Anthony J; Cooper, Ken; Atkinson, Paola; Nicoll, Christine A; Ritchie, David A; Shields, Andrew J
2010-07-09
Quantum interference lies at the foundation of many protocols for scalable quantum computing and communication with linear optics. To observe these effects the light source must emit photons that are indistinguishable. From a technological standpoint, it would be beneficial to have electrical control over the emission. Here we report of an electrically driven single-photon source emitting indistinguishable photons. The device consists of a layer of InAs quantum dots embedded in the intrinsic region of a p-i-n diode. Indistinguishability of consecutive photons is tested in a two-photon interference experiment under two modes of operation, continuous and pulsed current injection. We also present a complete theory based on the interference of photons with a Lorentzian spectrum which we compare to both our continuous wave and pulsed experiments. In the former case, a visibility was measured limited only by the timing resolution of our detection system. In the case of pulsed injection, we employ a two-pulse voltage sequence which suppresses multi-photon emission and allows us to carry out temporal filtering of photons which have undergone dephasing. The characteristic Hong-Ou-Mandel 'dip' is measured, resulting in a visibility of 64 +/- 4%.
Griffiths, Robert B.
2001-11-01
Quantum mechanics is one of the most fundamental yet difficult subjects in physics. Nonrelativistic quantum theory is presented here in a clear and systematic fashion, integrating Born's probabilistic interpretation with Schrödinger dynamics. Basic quantum principles are illustrated with simple examples requiring no mathematics beyond linear algebra and elementary probability theory. The quantum measurement process is consistently analyzed using fundamental quantum principles without referring to measurement. These same principles are used to resolve several of the paradoxes that have long perplexed physicists, including the double slit and Schrödinger's cat. The consistent histories formalism used here was first introduced by the author, and extended by M. Gell-Mann, J. Hartle and R. Omnès. Essential for researchers yet accessible to advanced undergraduate students in physics, chemistry, mathematics, and computer science, this book is supplementary to standard textbooks. It will also be of interest to physicists and philosophers working on the foundations of quantum mechanics. Comprehensive account Written by one of the main figures in the field Paperback edition of successful work on philosophy of quantum mechanics
Temperature dependent characterization of gallium arsenide X-ray mesa p-i-n photodiodes
Energy Technology Data Exchange (ETDEWEB)
Lioliou, G., E-mail: G.Lioliou@sussex.ac.uk; Barnett, A. M. [Semiconductor Materials and Devices Laboratory, Department Engineering and Design, School of Engineering and Informatics, University of Sussex, Falmer, Brighton BN1 9QT (United Kingdom); Meng, X.; Ng, J. S. [Department of Electronic and Electrical Engineering, University of Sheffield, Mappin Street, Sheffield S1 3JD (United Kingdom)
2016-03-28
Electrical characterization of two GaAs p{sup +}-i-n{sup +} mesa X-ray photodiodes over the temperature range 0 °C to 120 °C together with characterization of one of the diodes as an X-ray detector over the temperature range 0 °C to 60 °C is reported as part of the development of photon counting X-ray spectroscopic systems for harsh environments. The randomly selected diodes were fully etched and unpassivated. The diodes were 200 μm in diameter and had 7 μm thick i layers. The leakage current density was found to increase from (3 ± 1) nA/cm{sup −2} at 0 °C to (24.36 ± 0.05) μA/cm{sup −2} at 120 °C for D1 and from a current density smaller than the uncertainty (0.2 ± 1.2) nA/cm{sup −2} at 0 °C to (9.39 ± 0.02) μA/cm{sup −2} at 120 °C for D2 at the maximum investigated reverse bias (15 V). The best energy resolution (FWHM at 5.9 keV) was achieved at 5 V reverse bias, at each temperature; 730 eV at 0 °C, 750 eV at 20 °C, 770 eV at 40 °C, and 840 eV at 60 °C. It was found that the parallel white noise was the main source of the photopeak broadening only when the detector operated at 60 °C, at 5 V, 10 V, and 15 V reverse bias and at long shaping times (>5 μs), whereas the sum of the dielectric noise and charge trapping noise was the dominant source of noise for all the other spectra.
p-i-n Homojunction in Organic Light-Emitting Transistors
Bisri, Satria Zulkarnaen; Takenobu, Taishi; Sawabe, Kosuke; Tsuda, Satoshi; Yomogidao, Yohei; Yamao, Takeshi; Hotta, Shu; Adachi, Chihaya; Iwasa, Yoshihiro
2011-01-01
A new method for investigating light-emitting property in organic devices is demonstrated. We apply the ambipolar light-emitting transistors (LETS) to directly observe the recombination zone, and find a strong link between the transistor performance and the zone size. This finding unambiguously
Highly Efficient p-i-n Type Organic Light-emitting Diodes Using ...
African Journals Online (AJOL)
operating voltage of 3.0 V. In addition, impressive characteristics of white .... low voltage drops in the transport layers due to their ... thermal evaporation in high vacuum or organic vapor ... the calibrated silicon photodiode above the OLEDs.
Open circuit voltage-decay behavior in amorphous p-i-n solar due to injection
Smrity, Manu; Dhariwal, S. R.
2018-05-01
The paper deals with the basic recombination processes at the dangling bond and the band tail states at various levels of injection, expressed in terms of short-circuit current density and their role in the behavior of amorphous solar cells. As the level of injection increases the fill factor decreases whereas the open circuit voltage increases very slowly, showing a saturation tendency. Calculations have been done for two values of tail state densities and shows that with an increase in tail state densities both, the fill factor and open circuit voltage decreases, results an overall degradation of the solar cell.
Performances of epitaxial GaAs p/i/n structures for X-ray imaging
Sun, G C; Haguet, V; Pesant, J C; Montagne, J P; Lenoir, M; Bourgoin, J C
2002-01-01
We have realized 150 mu mx150 mu m pixels using ion implantation followed by photolithography, metallic contact evaporation and chemical etching on about 200 mu m thick GaAs epitaxial layers. These layers were grown on n sup + and p sup + substrates by an already described Chemical Reaction technique, which is economical, non-polluting and can attain growth rates of several microns per minute. The mesa p sup + /i/n sup + pixel were characterized using current-voltage and capacitance-voltage measurements. The charge collection efficiency was evaluated by photoconductivity measurements under typical conditions of standard radiological examinations.
Highly Efficient p-i-n Type Organic Light-emitting Diodes Using ...
African Journals Online (AJOL)
Both predominantly hole transporting material (TCTA) and an exclusively electron transporting host material (TAZ) are doped with the green phosphorescent dye tris(phenylpyridine)iridium [Ir(ppy)3]. The intrinsic and doped transport and emission layers are formed using a high vacuum controlled co-evaporation deposition ...
Chang, Mou-Hsiung
2015-01-01
The classical probability theory initiated by Kolmogorov and its quantum counterpart, pioneered by von Neumann, were created at about the same time in the 1930s, but development of the quantum theory has trailed far behind. Although highly appealing, the quantum theory has a steep learning curve, requiring tools from both probability and analysis and a facility for combining the two viewpoints. This book is a systematic, self-contained account of the core of quantum probability and quantum stochastic processes for graduate students and researchers. The only assumed background is knowledge of the basic theory of Hilbert spaces, bounded linear operators, and classical Markov processes. From there, the book introduces additional tools from analysis, and then builds the quantum probability framework needed to support applications to quantum control and quantum information and communication. These include quantum noise, quantum stochastic calculus, stochastic quantum differential equations, quantum Markov semigrou...
International Nuclear Information System (INIS)
Takeoka, Masahiro; Fujiwara, Mikio; Mizuno, Jun; Sasaki, Masahide
2004-01-01
Quantum-information theory predicts that when the transmission resource is doubled in quantum channels, the amount of information transmitted can be increased more than twice by quantum-channel coding technique, whereas the increase is at most twice in classical information theory. This remarkable feature, the superadditive quantum-coding gain, can be implemented by appropriate choices of code words and corresponding quantum decoding which requires a collective quantum measurement. Recently, an experimental demonstration was reported [M. Fujiwara et al., Phys. Rev. Lett. 90, 167906 (2003)]. The purpose of this paper is to describe our experiment in detail. Particularly, a design strategy of quantum-collective decoding in physical quantum circuits is emphasized. We also address the practical implication of the gain on communication performance by introducing the quantum-classical hybrid coding scheme. We show how the superadditive quantum-coding gain, even in a small code length, can boost the communication performance of conventional coding techniques
Scarani, Valerio
1998-01-01
The aim of this thesis was to explain what quantum computing is. The information for the thesis was gathered from books, scientific publications, and news articles. The analysis of the information revealed that quantum computing can be broken down to three areas: theories behind quantum computing explaining the structure of a quantum computer, known quantum algorithms, and the actual physical realizations of a quantum computer. The thesis reveals that moving from classical memor...
Wu, Lian-Ao; Lidar, Daniel A.
2005-01-01
When quantum communication networks proliferate they will likely be subject to a new type of attack: by hackers, virus makers, and other malicious intruders. Here we introduce the concept of "quantum malware" to describe such human-made intrusions. We offer a simple solution for storage of quantum information in a manner which protects quantum networks from quantum malware. This solution involves swapping the quantum information at random times between the network and isolated, distributed an...
Quantumness beyond quantum mechanics
International Nuclear Information System (INIS)
Sanz, Ángel S
2012-01-01
Bohmian mechanics allows us to understand quantum systems in the light of other quantum traits than the well-known ones (coherence, diffraction, interference, tunnelling, discreteness, entanglement, etc.). Here the discussion focusses precisely on two of these interesting aspects, which arise when quantum mechanics is thought within this theoretical framework: the non-crossing property, which allows for distinguishability without erasing interference patterns, and the possibility to define quantum probability tubes, along which the probability remains constant all the way. Furthermore, taking into account this hydrodynamic-like description as a link, it is also shown how this knowledge (concepts and ideas) can be straightforwardly transferred to other fields of physics (for example, the transmission of light along waveguides).
Nonlinear Dynamics In Quantum Physics -- Quantum Chaos and Quantum Instantons
Kröger, H.
2003-01-01
We discuss the recently proposed quantum action - its interpretation, its motivation, its mathematical properties and its use in physics: quantum mechanical tunneling, quantum instantons and quantum chaos.
Triple-server blind quantum computation using entanglement swapping
Li, Qin; Chan, Wai Hong; Wu, Chunhui; Wen, Zhonghua
2014-04-01
Blind quantum computation allows a client who does not have enough quantum resources or technologies to achieve quantum computation on a remote quantum server such that the client's input, output, and algorithm remain unknown to the server. Up to now, single- and double-server blind quantum computation have been considered. In this work, we propose a triple-server blind computation protocol where the client can delegate quantum computation to three quantum servers by the use of entanglement swapping. Furthermore, the three quantum servers can communicate with each other and the client is almost classical since one does not require any quantum computational power, quantum memory, and the ability to prepare any quantum states and only needs to be capable of getting access to quantum channels.
Holomorphic anomaly and quantum mechanics
Codesido, Santiago; Mariño, Marcos
2018-02-01
We show that the all-orders WKB periods of one-dimensional quantum mechanical oscillators are governed by the refined holomorphic anomaly equations of topological string theory. We analyze in detail the double-well potential and the cubic and quartic oscillators, and we calculate the WKB expansion of their quantum free energies by using the direct integration of the anomaly equations. We reproduce in this way all known results about the quantum periods of these models, which we express in terms of modular forms on the WKB curve. As an application of our results, we study the large order behavior of the WKB expansion in the case of the double well, which displays the double factorial growth typical of string theory.
Type II GaSb/GaAs quantum dot/ring stacks with extended photoresponse for efficient solar cells
Energy Technology Data Exchange (ETDEWEB)
Carrington, Peter James, E-mail: p.carrington@lancaster.ac.uk [Physics Department, Lancaster University, Lancaster LA1 4YB (United Kingdom); Mahajumi, Abu Syed [Physics Department, Lancaster University, Lancaster LA1 4YB (United Kingdom); Wagener, Magnus C.; Botha, Johannes Reinhardt [Department of Physics, Nelson Mandela Metropolitan University, Port Elizabeth (South Africa); Zhuang Qian; Krier, Anthony [Physics Department, Lancaster University, Lancaster LA1 4YB (United Kingdom)
2012-05-15
We report on the fabrication of GaAs based p-i-n solar cells containing 5 and 10 layers of type II GaSb quantum rings grown by molecular beam epitaxy. Solar cells containing quantum rings show improved efficiency at longer wavelengths into the near-IR extending up to 1500 nm and show enhanced short-circuit current under 1 sun illumination compared to a GaAs control cell. A reduction in the open-circuit voltage is observed due to the build-up of internal strain. The MBE growth, formation and photoluminescence of single and stacked layers of GaSb/GaAs quantum rings are also presented.
Ellerman, David
2014-03-01
In models of QM over finite fields (e.g., Schumacher's ``modal quantum theory'' MQT), one finite field stands out, Z2, since Z2 vectors represent sets. QM (finite-dimensional) mathematics can be transported to sets resulting in quantum mechanics over sets or QM/sets. This gives a full probability calculus (unlike MQT with only zero-one modalities) that leads to a fulsome theory of QM/sets including ``logical'' models of the double-slit experiment, Bell's Theorem, QIT, and QC. In QC over Z2 (where gates are non-singular matrices as in MQT), a simple quantum algorithm (one gate plus one function evaluation) solves the Parity SAT problem (finding the parity of the sum of all values of an n-ary Boolean function). Classically, the Parity SAT problem requires 2n function evaluations in contrast to the one function evaluation required in the quantum algorithm. This is quantum speedup but with all the calculations over Z2 just like classical computing. This shows definitively that the source of quantum speedup is not in the greater power of computing over the complex numbers, and confirms the idea that the source is in superposition.
International Nuclear Information System (INIS)
Anon.
1990-01-01
The book is on quantum mechanics. The emphasis is on the basic concepts and the methodology. The chapters include: Breakdown of classical concepts; Quantum mechanical concepts; Basic postulates of quantum mechanics; solution of problems in quantum mechanics; Simple harmonic oscillator; and Angular Momentum
International Nuclear Information System (INIS)
Buechler, Hans Peter; Calcarco, Tommaso; Dressel, Martin
2008-01-01
The following topics are dealt with: Artificial atoms and molecules, tailored from solids, fractional flux quanta, molecular magnets, controlled interaction in quantum gases, the theory of quantum correlations in mott matter, cold gases, and mesoscopic systems, Bose-Einstein condensates on the chip, on the route to the quantum computer, a quantum computer in diamond. (HSI)
International Nuclear Information System (INIS)
Reynaud, S.; Giacobino, S.; Zinn-Justin, J.
1997-01-01
This course is dedicated to present in a pedagogical manner the recent developments in peculiar fields concerned by quantum fluctuations: quantum noise in optics, light propagation through dielectric media, sub-Poissonian light generated by lasers and masers, quantum non-demolition measurements, quantum electrodynamics applied to cavities and electrical circuits involving superconducting tunnel junctions. (A.C.)
Lanzagorta, Marco
2011-01-01
This book offers a concise review of quantum radar theory. Our approach is pedagogical, making emphasis on the physics behind the operation of a hypothetical quantum radar. We concentrate our discussion on the two major models proposed to date: interferometric quantum radar and quantum illumination. In addition, this book offers some new results, including an analytical study of quantum interferometry in the X-band radar region with a variety of atmospheric conditions, a derivation of a quantum radar equation, and a discussion of quantum radar jamming.This book assumes the reader is familiar w
Quantum dressing orbits on compact groups
Energy Technology Data Exchange (ETDEWEB)
Jurco, B. (Technische Univ. Clausthal, Clausthal-Zellerfeld (Germany). Sommerfeld Inst.); Stovicek, P. (Prague Univ. (Czechoslovakia). Dept. of Mathematics)
1993-02-01
The quantum double is shown to imply the dressing transformation on quantum compact groups and the quantum Iwasawa decomposition in the general case. Quantum dressing orbits are describing explicitly as *-algebras. The dual coalgebras consisting of differential operators are related to the quantum Weyl elements. Besides, the differential geometry on a quantum leaf allows a remarkably simple construction of irreducible *-representations of the algebras of quantum functions. Representation spaces then consist of analytic functions on classical phase spaces. These representations are also interpreted in the framework of quantization in the spirit of Berezin applied to symplectic leaves on classical compact groups. Convenient 'coherent states' are introduced and a correspondence between classical and quantum observables is given. (orig.).
Quantum dressing orbits on compact groups
International Nuclear Information System (INIS)
Jurco, B.; Stovicek, P.
1993-01-01
The quantum double is shown to imply the dressing transformation on quantum compact groups and the quantum Iwasawa decomposition in the general case. Quantum dressing orbits are describing explicitly as *-algebras. The dual coalgebras consisting of differential operators are related to the quantum Weyl elements. Besides, the differential geometry on a quantum leaf allows a remarkably simple construction of irreducible *-representations of the algebras of quantum functions. Representation spaces then consist of analytic functions on classical phase spaces. These representations are also interpreted in the framework of quantization in the spirit of Berezin applied to symplectic leaves on classical compact groups. Convenient 'coherent states' are introduced and a correspondence between classical and quantum observables is given. (orig.)
Controlled Photon Switch Assisted by Coupled Quantum Dots
Luo, Ming-Xing; Ma, Song-Ya; Chen, Xiu-Bo; Wang, Xiaojun
2015-01-01
Quantum switch is a primitive element in quantum network communication. In contrast to previous switch schemes on one degree of freedom (DOF) of quantum systems, we consider controlled switches of photon system with two DOFs. These controlled photon switches are constructed by exploring the optical selection rules derived from the quantum-dot spins in one-sided optical microcavities. Several double controlled-NOT gate on different joint systems are greatly simplified with an auxiliary DOF of the controlling photon. The photon switches show that two DOFs of photons can be independently transmitted in quantum networks. This result reduces the quantum resources for quantum network communication. PMID:26095049
International Nuclear Information System (INIS)
Kilin, Sergei Ya
1999-01-01
A new research direction known as quantum information is a multidisciplinary subject which involves quantum mechanics, optics, information theory, programming, discrete mathematics, laser physics and spectroscopy, and depends heavily on contributions from such areas as quantum computing, quantum teleportation and quantum cryptography, decoherence studies, and single-molecule and impurity spectroscopy. Some new results achieved in this rapidly growing field are discussed. (reviews of topical problems)
Energy Technology Data Exchange (ETDEWEB)
Kilin, Sergei Ya [B.I. Stepanov Institute of Physics, National Academy of Sciences of Belarus, Minsk (Belarus)
1999-05-31
A new research direction known as quantum information is a multidisciplinary subject which involves quantum mechanics, optics, information theory, programming, discrete mathematics, laser physics and spectroscopy, and depends heavily on contributions from such areas as quantum computing, quantum teleportation and quantum cryptography, decoherence studies, and single-molecule and impurity spectroscopy. Some new results achieved in this rapidly growing field are discussed. (reviews of topical problems)
International Nuclear Information System (INIS)
Stapp, H.P.
1988-12-01
Quantum ontologies are conceptions of the constitution of the universe that are compatible with quantum theory. The ontological orientation is contrasted to the pragmatic orientation of science, and reasons are given for considering quantum ontologies both within science, and in broader contexts. The principal quantum ontologies are described and evaluated. Invited paper at conference: Bell's Theorem, Quantum Theory, and Conceptions of the Universe, George Mason University, October 20-21, 1988. 16 refs
Quantum Computer Games: Quantum Minesweeper
Gordon, Michal; Gordon, Goren
2010-01-01
The computer game of quantum minesweeper is introduced as a quantum extension of the well-known classical minesweeper. Its main objective is to teach the unique concepts of quantum mechanics in a fun way. Quantum minesweeper demonstrates the effects of superposition, entanglement and their non-local characteristics. While in the classical…
Quantum computing based on space states without charge transfer
International Nuclear Information System (INIS)
Vyurkov, V.; Filippov, S.; Gorelik, L.
2010-01-01
An implementation of a quantum computer based on space states in double quantum dots is discussed. There is no charge transfer in qubits during a calculation, therefore, uncontrolled entanglement between qubits due to long-range Coulomb interaction is suppressed. Encoding and processing of quantum information is merely performed on symmetric and antisymmetric states of the electron in double quantum dots. Other plausible sources of decoherence caused by interaction with phonons and gates could be substantially suppressed in the structure as well. We also demonstrate how all necessary quantum logic operations, initialization, writing, and read-out could be carried out in the computer.
Energy Technology Data Exchange (ETDEWEB)
Drummond, P D [University of Queensland, St. Lucia, QLD (Australia).Physics Department
1999-07-01
Full text: Quantum optics in Australia has been an active research field for some years. I shall focus on recent developments in quantum and atom optics. Generally, the field as a whole is becoming more and more diverse, as technological developments drive experiments into new areas, and theorists either attempt to explain the new features, or else develop models for even more exotic ideas. The recent developments include quantum solitons, quantum computing, Bose-Einstein condensation, atom lasers, quantum cryptography, and novel tests of quantum mechanics. The talk will briefly cover current progress and outstanding problems in each of these areas. Copyright (1999) Australian Optical Society.
Energy Technology Data Exchange (ETDEWEB)
Buck, Christian [Max-Planck-Institut fuer Kernphysik, Saupfercheckweg 1, D-69117 Heidelberg (Germany)
2006-05-15
The goal of the Double Chooz reactor neutrino experiment is to search for the neutrino mixing parameter {theta}{sub 13}. Double Chooz will use two identical detectors at 150 m and 1.05 km distance from the reactor cores. The near detector is used to monitor the reactor {nu}-bar {sub e} flux while the second is dedicated to the search for a deviation from the expected (1/distance){sup 2} behavior. This two detector concept will allow a relative normalization systematic error of ca. 0.6 %. The expected sensitivity for sin{sup 2}2{theta}{sub 13} is then in the range 0.02 - 0.03 after three years of data taking. The antineutrinos will be detected in a liquid scintillator through the capture on protons followed by a gamma cascade, produced by the neutron capture on Gd.
Energy Technology Data Exchange (ETDEWEB)
Cederwall, Martin [Division for Theoretical Physics, Department of Physics, Chalmers University of Technology,SE 412 96 Gothenburg (Sweden)
2016-06-27
A geometry of superspace corresponding to double field theory is developed, with type I I supergravity in D=10 as the main example. The formalism is based on an orthosymplectic extension OSp(d,d|2s) of the continuous T-duality group. Covariance under generalised super-diffeomorphisms is manifest. Ordinary superspace is obtained as a solution of the orthosymplectic section condition. A systematic study of curved superspace Bianchi identities is performed, and a relation to a double pure spinor superfield cohomology is established. A Ramond-Ramond superfield is constructed as an infinite-dimensional orthosymplectic spinor. Such objects in minimal orbits under the OSp supergroup (“pure spinors”) define super-sections.
DEFF Research Database (Denmark)
Kaulio, Matti; Thorén, Kent; Rohrbeck, René
2017-01-01
We leverage the business model innovation and ambidexterity literature to investigate a contradictory case, the Swedish-Finnish Telecom operator TeliaSonera. Despite being challenged by three major disruptions, the company not only still exists but also enjoys remarkably good financial performance....... Building on extant archival data and interviews, we carefully identify and map 26 organizational responses during 1992–2016. We find that the firm has overcome three critical phases by experimenting and pioneering with portfolios of business models and/or technological innovations. We describe...... this behaviour as double ambidexterity. We use an in-depth case study to conceptualize double ambidexterity and discuss its impact on the business's survival and enduring success....
Quantum entanglement and quantum teleportation
International Nuclear Information System (INIS)
Shih, Y.H.
2001-01-01
One of the most surprising consequences of quantum mechanics is the entanglement of two or more distance particles. The ''ghost'' interference and the ''ghost'' image experiments demonstrated the astonishing nonlocal behavior of an entangled photon pair. Even though we still have questions in regard to fundamental issues of the entangled quantum systems, quantum entanglement has started to play important roles in quantum information and quantum computation. Quantum teleportation is one of the hot topics. We have demonstrated a quantum teleportation experiment recently. The experimental results proved the working principle of irreversibly teleporting an unknown arbitrary quantum state from one system to another distant system by disassembling into and then later reconstructing from purely classical information and nonclassical EPR correlations. The distinct feature of this experiment is that the complete set of Bell states can be distinguished in the Bell state measurement. Teleportation of a quantum state can thus occur with certainty in principle. (orig.)
"Quantum Interference with Slits" Revisited
Rothman, Tony; Boughn, Stephen
2011-01-01
Marcella has presented a straightforward technique employing the Dirac formalism to calculate single- and double-slit interference patterns. He claims that no reference is made to classical optics or scattering theory and that his method therefore provides a purely quantum mechanical description of these experiments. He also presents his…
Quantum robots and quantum computers
Energy Technology Data Exchange (ETDEWEB)
Benioff, P.
1998-07-01
Validation of a presumably universal theory, such as quantum mechanics, requires a quantum mechanical description of systems that carry out theoretical calculations and systems that carry out experiments. The description of quantum computers is under active development. No description of systems to carry out experiments has been given. A small step in this direction is taken here by giving a description of quantum robots as mobile systems with on board quantum computers that interact with different environments. Some properties of these systems are discussed. A specific model based on the literature descriptions of quantum Turing machines is presented.
Quantum computers and quantum computations
International Nuclear Information System (INIS)
Valiev, Kamil' A
2005-01-01
This review outlines the principles of operation of quantum computers and their elements. The theory of ideal computers that do not interact with the environment and are immune to quantum decohering processes is presented. Decohering processes in quantum computers are investigated. The review considers methods for correcting quantum computing errors arising from the decoherence of the state of the quantum computer, as well as possible methods for the suppression of the decohering processes. A brief enumeration of proposed quantum computer realizations concludes the review. (reviews of topical problems)
Optimization using quantum mechanics: quantum annealing through adiabatic evolution
International Nuclear Information System (INIS)
Santoro, Giuseppe E; Tosatti, Erio
2006-01-01
We review here some recent work in the field of quantum annealing, alias adiabatic quantum computation. The idea of quantum annealing is to perform optimization by a quantum adiabatic evolution which tracks the ground state of a suitable time-dependent Hamiltonian, where 'ℎ' is slowly switched off. We illustrate several applications of quantum annealing strategies, starting from textbook toy-models-double-well potentials and other one-dimensional examples, with and without disorder. These examples display in a clear way the crucial differences between classical and quantum annealing. We then discuss applications of quantum annealing to challenging hard optimization problems, such as the random Ising model, the travelling salesman problem and Boolean satisfiability problems. The techniques used to implement quantum annealing are either deterministic Schroedinger's evolutions, for the toy models, or path-integral Monte Carlo and Green's function Monte Carlo approaches, for the hard optimization problems. The crucial role played by disorder and the associated non-trivial Landau-Zener tunnelling phenomena is discussed and emphasized. (topical review)
Supersymmetry and quantum mechanics
International Nuclear Information System (INIS)
Cooper, F.; Sukhatme, U.
1995-01-01
In the past ten years, the ideas of supersymmetry have been profitably applied to many nonrelativistic quantum mechanical problems. In particular, there is now a much deeper understanding of why certain potentials are analytically solvable and an array of powerful new approximation methods for handling potentials which are not exactly solvable. In this report, we review the theoretical formulation of supersymmetric quantum mechanics and discuss many applications. Exactly solvable potentials can be understood in terms of a few basic ideas which include supersymmetric partner potentials, shape invariance and operator transformations. Familiar solvable potentials all have the property of shape invariance. We describe new exactly solvable shape invariant potentials which include the recently discovered self-similar potentials as a special case. The connection between inverse scattering, isospectral potentials and supersymmetric quantum mechanics is discussed and multi-soliton solutions of the KdV equation are constructed. Approximation methods are also discussed within the framework of supersymmetric quantum mechanics and in particular it is shown that a supersymmetry inspired WKB approximation is exact for a class of shape invariant potentials. Supersymmetry ideas give particularly nice results for the tunneling rate in a double well potential and for improving large N expansions. We also discuss the problem of a charged Dirac particle in an external magnetic field and other potentials in terms of supersymmetric quantum mechanics. Finally, we discuss structures more general than supersymmetric quantum mechanics such as parasupersymmetric quantum mechanics in which there is a symmetry between a boson and a para-fermion of order p. ((orig.))
Chanda, Rajat
1997-01-01
The book discusses the laws of quantum mechanics, several amazing quantum phenomena and some recent progress in understanding the connection between the quantum and the classical worlds. We show how paradoxes arise and how to resolve them. The significance of Bell's theorem and the remarkable experimental results on particle correlations are described in some detail. Finally, the current status of our understanding of quantum theory is summerised.
Classical trajectories and quantum field theory
International Nuclear Information System (INIS)
Vitiello, Giuseppe; Istituto Nazionale di Fisica Nucleare, Salerno
2005-01-01
The density matrix and the Wigner function formalism requires the doubling of the degrees of freedom in quantum mechanics (QM) and quantum field theory (QFT). The doubled degrees of freedom play the role of the thermal bath or environment degrees of freedom and are entangled with the system degrees of freedom. They also account for quantum noise in the fluctuating random forces in the system-environment coupling. The algebraic structure of QFT turns out to be the one of the deformed Hopf algebra. In such a frame, the trajectories in the space of the unitarily inequivalent representations of the canonical commutation relations turn out to be classical trajectories and, under convenient conditions, they may exhibit properties typical of classical chaotic trajectories in nonlinear dynamics. The quantum Brownian motion and the two-slit experiment in QM are discussed in connection with the doubling of the degrees of freedom. (author)
Coleman, Piers; Schofield, Andrew J
2005-01-20
As we mark the centenary of Albert Einstein's seminal contribution to both quantum mechanics and special relativity, we approach another anniversary--that of Einstein's foundation of the quantum theory of solids. But 100 years on, the same experimental measurement that puzzled Einstein and his contemporaries is forcing us to question our understanding of how quantum matter transforms at ultra-low temperatures.
Indian Academy of Sciences (India)
In the first part of this article, we had looked at how quantum physics can be harnessed to make the building blocks of a quantum computer. In this concluding part, we look at algorithms which can exploit the power of this computational device, and some practical difficulties in building such a device. Quantum Algorithms.
I, Quantum Robot: Quantum Mind control on a Quantum Computer
Zizzi, Paola
2008-01-01
The logic which describes quantum robots is not orthodox quantum logic, but a deductive calculus which reproduces the quantum tasks (computational processes, and actions) taking into account quantum superposition and quantum entanglement. A way toward the realization of intelligent quantum robots is to adopt a quantum metalanguage to control quantum robots. A physical implementation of a quantum metalanguage might be the use of coherent states in brain signals.
Comment on 'Biphoton double-slit experiment'
International Nuclear Information System (INIS)
Oriols, X.
2005-01-01
In a recent paper [Phys. Rev. A 68, 033803 (2003)] experimental results on a double-slit configuration with two entangled bosons are presented. The authors argue that their data contradicts the de Broglie-Bohm interpretation of quantum mechanics. In this Comment we show that this conclusion is incorrect
Quantum state propagation in linear photonic bandgap structures
International Nuclear Information System (INIS)
Severini, S; Tricca, D; Sibilia, C; Bertolotti, M; Perina, Jan
2004-01-01
In this paper we investigate the propagation of a generic quantum state in a corrugated waveguide, which reproduces a photonic bandgap structure. We find the conditions that assure the outcoming state to preserve the quantum properties of the incoming state. Then, focusing on a particular quantum state (realized by two counter-propagating coherent states), we study the possibility of preserving the quantum properties of this particular double coherent state even in the presence of absorption phenomena during propagation in the structure
Quantum Logic and Quantum Reconstruction
Stairs, Allen
2015-01-01
Quantum logic understood as a reconstruction program had real successes and genuine limitations. This paper offers a synopsis of both and suggests a way of seeing quantum logic in a larger, still thriving context.
Quantum dynamics of quantum bits
International Nuclear Information System (INIS)
Nguyen, Bich Ha
2011-01-01
The theory of coherent oscillations of the matrix elements of the density matrix of the two-state system as a quantum bit is presented. Different calculation methods are elaborated in the case of a free quantum bit. Then the most appropriate methods are applied to the study of the density matrices of the quantum bits interacting with a classical pumping radiation field as well as with the quantum electromagnetic field in a single-mode microcavity. The theory of decoherence of a quantum bit in Markovian approximation is presented. The decoherence of a quantum bit interacting with monoenergetic photons in a microcavity is also discussed. The content of the present work can be considered as an introduction to the study of the quantum dynamics of quantum bits. (review)
Experimental study on the double barrier structure at room temperature
Energy Technology Data Exchange (ETDEWEB)
Sheng, H Y; Chua, S J [Centre for Optoelectronics, Dept. of Electrical Engineering, National Univ. of Singapore (Singapore)
1994-06-15
An experimental study of AlAs / GaAs / AlAs double barrier structure is carried out. The double barrier and quantum well structure are grown by MBE. The peak-to-valley ratio 2.6 : 1 with peak current density of 1.6 kA/cm/sup 2 at room temperature have been achieved. (authors)
Brown, Matthew J.
2014-02-01
The framework of quantum frames can help unravel some of the interpretive difficulties i the foundation of quantum mechanics. In this paper, I begin by tracing the origins of this concept in Bohr's discussion of quantum theory and his theory of complementarity. Engaging with various interpreters and followers of Bohr, I argue that the correct account of quantum frames must be extended beyond literal space-time reference frames to frames defined by relations between a quantum system and the exosystem or external physical frame, of which measurement contexts are a particularly important example. This approach provides superior solutions to key EPR-type measurement and locality paradoxes.
Zurek, Wojciech Hubert
2009-03-01
Quantum Darwinism describes the proliferation, in the environment, of multiple records of selected states of a quantum system. It explains how the quantum fragility of a state of a single quantum system can lead to the classical robustness of states in their correlated multitude; shows how effective `wave-packet collapse' arises as a result of the proliferation throughout the environment of imprints of the state of the system; and provides a framework for the derivation of Born's rule, which relates the probabilities of detecting states to their amplitudes. Taken together, these three advances mark considerable progress towards settling the quantum measurement problem.
International Nuclear Information System (INIS)
Kouwenhoven, L.; Marcus, C.
1998-01-01
Quantum dots are man-made ''droplets'' of charge that can contain anything from a single electron to a collection of several thousand. Their typical dimensions range from nanometres to a few microns, and their size, shape and interactions can be precisely controlled through the use of advanced nanofabrication technology. The physics of quantum dots shows many parallels with the behaviour of naturally occurring quantum systems in atomic and nuclear physics. Indeed, quantum dots exemplify an important trend in condensed-matter physics in which researchers study man-made objects rather than real atoms or nuclei. As in an atom, the energy levels in a quantum dot become quantized due to the confinement of electrons. With quantum dots, however, an experimentalist can scan through the entire periodic table by simply changing a voltage. In this article the authors describe how quantum dots make it possible to explore new physics in regimes that cannot otherwise be accessed in the laboratory. (UK)
Quantum information. Teleporation - cryptography - quantum computer
International Nuclear Information System (INIS)
Breuer, Reinhard
2010-01-01
The following topics are dealt with: Reality in the test house, quantum teleportation, 100 years of quantum theory, the reality of quanta, interactionless quantum measurement, rules for quantum computers, quantum computers with ions, spintronics with diamond, the limits of the quantum computers, a view into the future of quantum optics. (HSI)
Quantum symmetry in quantum theory
International Nuclear Information System (INIS)
Schomerus, V.
1993-02-01
Symmetry concepts have always been of great importance for physical problems like explicit calculations, classification or model building. More recently, new 'quantum symmetries' ((quasi) quantum groups) attracted much interest in quantum theory. It is shown that all these quantum symmetries permit a conventional formulation as symmetry in quantum mechanics. Symmetry transformations can act on the Hilbert space H of physical states such that the ground state is invariant and field operators transform covariantly. Models show that one must allow for 'truncation' in the tensor product of representations of a quantum symmetry. This means that the dimension of the tensor product of two representations of dimension σ 1 and σ 2 may be strictly smaller than σ 1 σ 2 . Consistency of the transformation law of field operators local braid relations leads us to expect, that (weak) quasi quantum groups are the most general symmetries in local quantum theory. The elements of the R-matrix which appears in these local braid relations turn out to be operators on H in general. It will be explained in detail how examples of field algebras with weak quasi quantum group symmetry can be obtained. Given a set of observable field with a finite number of superselection sectors, a quantum symmetry together with a complete set of covariant field operators which obey local braid relations are constructed. A covariant transformation law for adjoint fields is not automatic but will follow when the existence of an appropriate antipode is assumed. At the example of the chiral critical Ising model, non-uniqueness of the quantum symmetry will be demonstrated. Generalized quantum symmetries yield examples of gauge symmetries in non-commutative geometry. Quasi-quantum planes are introduced as the simplest examples of quasi-associative differential geometry. (Weak) quasi quantum groups can act on them by generalized derivations much as quantum groups do in non-commutative (differential-) geometry
Emergent quantum mechanics without wavefunctions
Mesa Pascasio, J.; Fussy, S.; Schwabl, H.; Grössing, G.
2016-03-01
We present our model of an Emergent Quantum Mechanics which can be characterized by “realism without pre-determination”. This is illustrated by our analytic description and corresponding computer simulations of Bohmian-like “surreal” trajectories, which are obtained classically, i.e. without the use of any quantum mechanical tool such as wavefunctions. However, these trajectories do not necessarily represent ontological paths of particles but rather mappings of the probability density flux in a hydrodynamical sense. Modelling emergent quantum mechanics in a high-low intesity double slit scenario gives rise to the “quantum sweeper effect” with a characteristic intensity pattern. This phenomenon should be experimentally testable via weak measurement techniques.
Emergent quantum mechanics without wavefunctions
International Nuclear Information System (INIS)
Pascasio, J Mesa; Fussy, S; Schwabl, H; Grössing, G
2016-01-01
We present our model of an Emergent Quantum Mechanics which can be characterized by “realism without pre-determination”. This is illustrated by our analytic description and corresponding computer simulations of Bohmian-like “surreal” trajectories, which are obtained classically, i.e. without the use of any quantum mechanical tool such as wavefunctions. However, these trajectories do not necessarily represent ontological paths of particles but rather mappings of the probability density flux in a hydrodynamical sense. Modelling emergent quantum mechanics in a high-low intesity double slit scenario gives rise to the “quantum sweeper effect” with a characteristic intensity pattern. This phenomenon should be experimentally testable via weak measurement techniques. (paper)
Dynamics in the quantum/classical limit based on selective use of the quantum potential
International Nuclear Information System (INIS)
Garashchuk, Sophya; Dell’Angelo, David; Rassolov, Vitaly A.
2014-01-01
A classical limit of quantum dynamics can be defined by compensation of the quantum potential in the time-dependent Schrödinger equation. The quantum potential is a non-local quantity, defined in the trajectory-based form of the Schrödinger equation, due to Madelung, de Broglie, and Bohm, which formally generates the quantum-mechanical features in dynamics. Selective inclusion of the quantum potential for the degrees of freedom deemed “quantum,” defines a hybrid quantum/classical dynamics, appropriate for molecular systems comprised of light and heavy nuclei. The wavefunction is associated with all of the nuclei, and the Ehrenfest, or mean-field, averaging of the force acting on the classical degrees of freedom, typical of the mixed quantum/classical methods, is avoided. The hybrid approach is used to examine evolution of light/heavy systems in the harmonic and double-well potentials, using conventional grid-based and approximate quantum-trajectory time propagation. The approximate quantum force is defined on spatial domains, which removes unphysical coupling of the wavefunction fragments corresponding to distinct classical channels or configurations. The quantum potential, associated with the quantum particle, generates forces acting on both quantum and classical particles to describe the backreaction
Dynamics in the quantum/classical limit based on selective use of the quantum potential
Energy Technology Data Exchange (ETDEWEB)
Garashchuk, Sophya, E-mail: garashchuk@sc.edu; Dell’Angelo, David; Rassolov, Vitaly A. [Department of Chemistry and Biochemistry, University of South Carolina, Columbia, South Carolina 29208 (United States)
2014-12-21
A classical limit of quantum dynamics can be defined by compensation of the quantum potential in the time-dependent Schrödinger equation. The quantum potential is a non-local quantity, defined in the trajectory-based form of the Schrödinger equation, due to Madelung, de Broglie, and Bohm, which formally generates the quantum-mechanical features in dynamics. Selective inclusion of the quantum potential for the degrees of freedom deemed “quantum,” defines a hybrid quantum/classical dynamics, appropriate for molecular systems comprised of light and heavy nuclei. The wavefunction is associated with all of the nuclei, and the Ehrenfest, or mean-field, averaging of the force acting on the classical degrees of freedom, typical of the mixed quantum/classical methods, is avoided. The hybrid approach is used to examine evolution of light/heavy systems in the harmonic and double-well potentials, using conventional grid-based and approximate quantum-trajectory time propagation. The approximate quantum force is defined on spatial domains, which removes unphysical coupling of the wavefunction fragments corresponding to distinct classical channels or configurations. The quantum potential, associated with the quantum particle, generates forces acting on both quantum and classical particles to describe the backreaction.
International Nuclear Information System (INIS)
Khalil, H.M.; Mazzucato, S.; Ardali, S.; Celik, O.; Mutlu, S.; Royall, B.; Tiras, E.; Balkan, N.; Puustinen, J.; Korpijärvi, V.-M.; Guina, M.
2012-01-01
Highlights: ► We studied p-i-n GaInNAs MQW devices as function of temperature and magnetic field. ► Observed oscillations in the sample current–voltage curves at low temperature. ► Shift in oscillation position with magnetic field described by Landau level split. ► Resonant tunnelling and thermionic emission used to describe oscillations. - Abstract: The photoconductivity of p-i-n GaInNAs/GaAs multiple quantum well (MQW) mesa structures is investigated. When illuminated with photons at energy greater than the GaAs bandgap, a number of oscillations are observed in the current–voltage I–V characteristics. The amplitude and position of the oscillations is shown to depend upon the temperature, as well as upon the exciting wavelength and intensity. Due to the absence of the oscillations in the dark I–V and at temperatures above T = 200 K, we explain them in terms of photogenerated electrons escaping from quantum wells via tunnelling or thermionic emission. Magnetic fields up to B = 11 T were applied parallel to the planes of the QWs. A small voltage shift in the position of the oscillations was observed, proportional to the magnetic field intensity and dependent upon the temperature. Calculation of the Landau level energy separation (16 meV) agrees with the observed experimental data. Magneto-tunnelling spectroscopy probes in detail the nature of band- or impurity-like states responsible for resonances in first and second subbands, observing the I–V plot in dark condition and under illumination. The field-dependence of the amplitude of the oscillation peaks in I–V has the characteristic form of a quantum mechanical admixing effect. This enhancement is also probably due to the hole recombination with majority electrons tunnelling in the N-related states of the quantum wells.
Energy Technology Data Exchange (ETDEWEB)
Khalil, H.M., E-mail: hkhalia@essex.ac.uk [School of Computer Science and Electronic Engineering, University of Essex, CO4 3SQ, Colchester (United Kingdom); Mazzucato, S. [School of Computer Science and Electronic Engineering, University of Essex, CO4 3SQ, Colchester (United Kingdom); Ardali, S.; Celik, O.; Mutlu, S. [Anadolu University, Faculty of Science, Department of Physics, Yunus Emre Campus 26470, Eskisehir (Turkey); Royall, B. [School of Computer Science and Electronic Engineering, University of Essex, CO4 3SQ, Colchester (United Kingdom); Tiras, E. [Anadolu University, Faculty of Science, Department of Physics, Yunus Emre Campus 26470, Eskisehir (Turkey); Balkan, N. [School of Computer Science and Electronic Engineering, University of Essex, CO4 3SQ, Colchester (United Kingdom); Puustinen, J.; Korpijaervi, V.-M.; Guina, M. [Optoelectronics Research Centre, Tampere University of Technology, Korkeakoulunkatu 10, FI-33720 Tampere (Finland)
2012-06-05
Highlights: Black-Right-Pointing-Pointer We studied p-i-n GaInNAs MQW devices as function of temperature and magnetic field. Black-Right-Pointing-Pointer Observed oscillations in the sample current-voltage curves at low temperature. Black-Right-Pointing-Pointer Shift in oscillation position with magnetic field described by Landau level split. Black-Right-Pointing-Pointer Resonant tunnelling and thermionic emission used to describe oscillations. - Abstract: The photoconductivity of p-i-n GaInNAs/GaAs multiple quantum well (MQW) mesa structures is investigated. When illuminated with photons at energy greater than the GaAs bandgap, a number of oscillations are observed in the current-voltage I-V characteristics. The amplitude and position of the oscillations is shown to depend upon the temperature, as well as upon the exciting wavelength and intensity. Due to the absence of the oscillations in the dark I-V and at temperatures above T = 200 K, we explain them in terms of photogenerated electrons escaping from quantum wells via tunnelling or thermionic emission. Magnetic fields up to B = 11 T were applied parallel to the planes of the QWs. A small voltage shift in the position of the oscillations was observed, proportional to the magnetic field intensity and dependent upon the temperature. Calculation of the Landau level energy separation (16 meV) agrees with the observed experimental data. Magneto-tunnelling spectroscopy probes in detail the nature of band- or impurity-like states responsible for resonances in first and second subbands, observing the I-V plot in dark condition and under illumination. The field-dependence of the amplitude of the oscillation peaks in I-V has the characteristic form of a quantum mechanical admixing effect. This enhancement is also probably due to the hole recombination with majority electrons tunnelling in the N-related states of the quantum wells.
Quantum games as quantum types
Delbecque, Yannick
In this thesis, we present a new model for higher-order quantum programming languages. The proposed model is an adaptation of the probabilistic game semantics developed by Danos and Harmer [DH02]: we expand it with quantum strategies which enable one to represent quantum states and quantum operations. Some of the basic properties of these strategies are established and then used to construct denotational semantics for three quantum programming languages. The first of these languages is a formalisation of the measurement calculus proposed by Danos et al. [DKP07]. The other two are new: they are higher-order quantum programming languages. Previous attempts to define a denotational semantics for higher-order quantum programming languages have failed. We identify some of the key reasons for this and base the design of our higher-order languages on these observations. The game semantics proposed in this thesis is the first denotational semantics for a lambda-calculus equipped with quantum types and with extra operations which allow one to program quantum algorithms. The results presented validate the two different approaches used in the design of these two new higher-order languages: a first one where quantum states are used through references and a second one where they are introduced as constants in the language. The quantum strategies presented in this thesis allow one to understand the constraints that must be imposed on quantum type systems with higher-order types. The most significant constraint is the fact that abstraction over part of the tensor product of many unknown quantum states must not be allowed. Quantum strategies are a new mathematical model which describes the interaction between classical and quantum data using system-environment dialogues. The interactions between the different parts of a quantum system are described using the rich structure generated by composition of strategies. This approach has enough generality to be put in relation with other
Busch, Paul; Pellonpää, Juha-Pekka; Ylinen, Kari
2016-01-01
This is a book about the Hilbert space formulation of quantum mechanics and its measurement theory. It contains a synopsis of what became of the Mathematical Foundations of Quantum Mechanics since von Neumann’s classic treatise with this title. Fundamental non-classical features of quantum mechanics—indeterminacy and incompatibility of observables, unavoidable measurement disturbance, entanglement, nonlocality—are explicated and analysed using the tools of operational quantum theory. The book is divided into four parts: 1. Mathematics provides a systematic exposition of the Hilbert space and operator theoretic tools and relevant measure and integration theory leading to the Naimark and Stinespring dilation theorems; 2. Elements develops the basic concepts of quantum mechanics and measurement theory with a focus on the notion of approximate joint measurability; 3. Realisations offers in-depth studies of the fundamental observables of quantum mechanics and some of their measurement implementations; and 4....
Walls, D F
2007-01-01
Quantum Optics gives a comprehensive coverage of developments in quantum optics over the past years. In the early chapters the formalism of quantum optics is elucidated and the main techniques are introduced. These are applied in the later chapters to problems such as squeezed states of light, resonance fluorescence, laser theory, quantum theory of four-wave mixing, quantum non-demolition measurements, Bell's inequalities, and atom optics. Experimental results are used to illustrate the theory throughout. This yields the most comprehensive and up-to-date coverage of experiment and theory in quantum optics in any textbook. More than 40 exercises helps readers test their understanding and provide practice in quantitative problem solving.
International Nuclear Information System (INIS)
Markov, M.A.; West, P.C.
1984-01-01
This book discusses the state of the art of quantum gravity, quantum effects in cosmology, quantum black-hole physics, recent developments in supergravity, and quantum gauge theories. Topics considered include the problems of general relativity, pregeometry, complete cosmological theories, quantum fluctuations in cosmology and galaxy formation, a new inflationary universe scenario, grand unified phase transitions and the early Universe, the generalized second law of thermodynamics, vacuum polarization near black holes, the relativity of vacuum, black hole evaporations and their cosmological consequences, currents in supersymmetric theories, the Kaluza-Klein theories, gauge algebra and quantization, and twistor theory. This volume constitutes the proceedings of the Second Seminar on Quantum Gravity held in Moscow in 1981
Realizing Controllable Quantum States
Takayanagi, Hideaki; Nitta, Junsaku
excitations in low-dimensional electron gases studied by far-infrared photoconductivity spectroscopy / C.-M. Hu. Control of photogenerated carriers and spins using surface acoustic waves / P. V. Santos, J. A. H. Stotz and R. Hey. PbTe nanostructures for spin filtering and detecting / G. Grabecki. G-factor control in an Ids-inserted InGaAs/InAlAs heterostructure / J. Nitta et al. Spin hall effect in p-type semiconductors / S. Murakami. Spin diffusion in mesoscopic superconducting A1 wires / Y.-S. Shin. H.-J. Lee and H.-W. Lee. Magnetization processes revealed by in-plane DC magnetoresistance measurements on manganite bicrystal thin film devices / R. Gunnarsson. M. Hanson and T. Claeson. Giant magnetoconductance at interface between a two-dimensional hole system and a magnetic semiconductor (Ga, Mn)As / Y. Hashimoto, S. Katsumoto and Y. Iye. Diffusion modes of the transport in diluted magnetic semiconductors / I. Kanazawa. Effect of an invasive voltage probe on the spin polarized current / J. Ohe and T. Ohtsuki -- 9. Spintronics in quantum dots. Tunable exchange interaction and Kondo screening in quantum dot devices / H. Tamura et al. Kondo effect in quantum dots in presence of itinerant-electron magnetism / J. Martinek et al. Optical band edge of II-VI and III-V based diluted magnetic semiconductors / M. Takahashi. Spin-polarized transport properties through double quantum dots / Y. Tanaka and N. Kawakami. RKKY interaction between two quantum dots embedded in an Aharonov-Bohm ring / Y. Utsumi et al. Fabrication and characterization of quantum dot single electron spin resonance devices / T. Kodera et al. Kondo effect in quantum dots with two orbitals and spin 1/2 - crossover from SU (4) to SU (2) symmetry / M. Eto. Detecting spin polarization of electrons in quantum dot edge channels by photoluminescence / S. Nomura. Manipulation of exchange interaction in a double quantum dot / M. Stopa, S. Tarucha and T. Hatano. Electron-density dependence of photoluminescence from Be
Stapp, Henry P.
2011-01-01
Robert Griffiths has recently addressed, within the framework of a 'consistent quantum theory' that he has developed, the issue of whether, as is often claimed, quantum mechanics entails a need for faster-than-light transfers of information over long distances. He argues that the putative proofs of this property that involve hidden variables include in their premises some essentially classical-physics-type assumptions that are fundamentally incompatible with the precepts of quantum physics. O...
Grifoni, Milena
1997-01-01
In this thesis, ratchet systems operating in the quantum regime are investigated. Ratchet systems, also known as Brownian motors, are periodic systems presenting an intrinsic asymmetry which can be exploited to extract work out of unbiased forces. As a model for ratchet systems, we consider the motion of a particle in a one-dimensional periodic and asymmetric potential, interacting with a thermal environment, and subject to an unbiased driving force. In quantum ratchets, intrinsic quantum flu...
Quantum space and quantum completeness
Jurić, Tajron
2018-05-01
Motivated by the question whether quantum gravity can "smear out" the classical singularity we analyze a certain quantum space and its quantum-mechanical completeness. Classical singularity is understood as a geodesic incompleteness, while quantum completeness requires a unique unitary time evolution for test fields propagating on an underlying background. Here the crucial point is that quantum completeness renders the Hamiltonian (or spatial part of the wave operator) to be essentially self-adjoint in order to generate a unique time evolution. We examine a model of quantum space which consists of a noncommutative BTZ black hole probed by a test scalar field. We show that the quantum gravity (noncommutative) effect is to enlarge the domain of BTZ parameters for which the relevant wave operator is essentially self-adjoint. This means that the corresponding quantum space is quantum complete for a larger range of BTZ parameters rendering the conclusion that in the quantum space one observes the effect of "smearing out" the singularity.
Asymptotics of quantum weighted Hurwitz numbers
Harnad, J.; Ortmann, Janosch
2018-06-01
This work concerns both the semiclassical and zero temperature asymptotics of quantum weighted double Hurwitz numbers. The partition function for quantum weighted double Hurwitz numbers can be interpreted in terms of the energy distribution of a quantum Bose gas with vanishing fugacity. We compute the leading semiclassical term of the partition function for three versions of the quantum weighted Hurwitz numbers, as well as lower order semiclassical corrections. The classical limit is shown to reproduce the simple single and double Hurwitz numbers studied by Okounkov and Pandharipande (2000 Math. Res. Lett. 7 447–53, 2000 Lett. Math. Phys. 53 59–74). The KP-Toda τ-function that serves as generating function for the quantum Hurwitz numbers is shown to have the τ-function of Okounkov and Pandharipande (2000 Math. Res. Lett. 7 447–53, 2000 Lett. Math. Phys. 53 59–74) as its leading term in the classical limit, and, with suitable scaling, the same holds for the partition function, the weights and expectations of Hurwitz numbers. We also compute the zero temperature limit of the partition function and quantum weighted Hurwitz numbers. The KP or Toda τ-function serving as generating function for the quantum Hurwitz numbers are shown to give the one for Belyi curves in the zero temperature limit and, with suitable scaling, the same holds true for the partition function, the weights and the expectations of Hurwitz numbers.
International Nuclear Information System (INIS)
Basdevant, J.L.; Dalibard, J.; Joffre, M.
2008-01-01
All physics is quantum from elementary particles to stars and to the big-bang via semi-conductors and chemistry. This theory is very subtle and we are not able to explain it without the help of mathematic tools. This book presents the principles of quantum mechanics and describes its mathematical formalism (wave function, Schroedinger equation, quantum operators, spin, Hamiltonians, collisions,..). We find numerous applications in the fields of new technologies (maser, quantum computer, cryptography,..) and in astrophysics. A series of about 90 exercises with their answers is included. This book is based on a physics course at a graduate level. (A.C.)
International Nuclear Information System (INIS)
Rodgers, P.
1998-01-01
There is more to information than a string of ones and zeroes the ability of ''quantum bits'' to be in two states at the same time could revolutionize information technology. In the mid-1930s two influential but seemingly unrelated papers were published. In 1935 Einstein, Podolsky and Rosen proposed the famous EPR paradox that has come to symbolize the mysteries of quantum mechanics. Two years later, Alan Turing introduced the universal Turing machine in an enigmatically titled paper, On computable numbers, and laid the foundations of the computer industry one of the biggest industries in the world today. Although quantum physics is essential to understand the operation of transistors and other solid-state devices in computers, computation itself has remained a resolutely classical process. Indeed it seems only natural that computation and quantum theory should be kept as far apart as possible surely the uncertainty associated with quantum theory is anathema to the reliability expected from computers? Wrong. In 1985 David Deutsch introduced the universal quantum computer and showed that quantum theory can actually allow computers to do more rather than less. The ability of particles to be in a superposition of more than one quantum state naturally introduces a form of parallelism that can, in principle, perform some traditional computing tasks faster than is possible with classical computers. Moreover, quantum computers are capable of other tasks that are not conceivable with their classical counterparts. Similar breakthroughs in cryptography and communication followed. (author)
Energy Technology Data Exchange (ETDEWEB)
Rodgers, P
1998-03-01
There is more to information than a string of ones and zeroes the ability of ''quantum bits'' to be in two states at the same time could revolutionize information technology. In the mid-1930s two influential but seemingly unrelated papers were published. In 1935 Einstein, Podolsky and Rosen proposed the famous EPR paradox that has come to symbolize the mysteries of quantum mechanics. Two years later, Alan Turing introduced the universal Turing machine in an enigmatically titled paper, On computable numbers, and laid the foundations of the computer industry one of the biggest industries in the world today. Although quantum physics is essential to understand the operation of transistors and other solid-state devices in computers, computation itself has remained a resolutely classical process. Indeed it seems only natural that computation and quantum theory should be kept as far apart as possible surely the uncertainty associated with quantum theory is anathema to the reliability expected from computers? Wrong. In 1985 David Deutsch introduced the universal quantum computer and showed that quantum theory can actually allow computers to do more rather than less. The ability of particles to be in a superposition of more than one quantum state naturally introduces a form of parallelism that can, in principle, perform some traditional computing tasks faster than is possible with classical computers. Moreover, quantum computers are capable of other tasks that are not conceivable with their classical counterparts. Similar breakthroughs in cryptography and communication followed. (author)
International Nuclear Information System (INIS)
Khrennikov, Andrei; Klein, Moshe; Mor, Tal
2010-01-01
In number theory, a partition of a positive integer n is a way of writing n as a sum of positive integers. The number of partitions of n is given by the partition function p(n). Inspired by quantum information processing, we extend the concept of partitions in number theory as follows: for an integer n, we treat each partition as a basis state of a quantum system representing that number n, so that the Hilbert-space that corresponds to that integer n is of dimension p(n); the 'classical integer' n can thus be generalized into a (pure) quantum state ||ψ(n) > which is a superposition of the partitions of n, in the same way that a quantum bit (qubit) is a generalization of a classical bit. More generally, ρ(n) is a density matrix in that same Hilbert-space (a probability distribution over pure states). Inspired by the notion of quantum numbers in quantum theory (such as in Bohr's model of the atom), we then try to go beyond the partitions, by defining (via recursion) the notion of 'sub-partitions' in number theory. Combining the two notions mentioned above, sub-partitions and quantum integers, we finally provide an alternative definition of the quantum integers [the pure-state |ψ'(n)> and the mixed-state ρ'(n),] this time using the sub-partitions as the basis states instead of the partitions, for describing the quantum number that corresponds to the integer n.
International Nuclear Information System (INIS)
Deutsch, D.
1992-01-01
As computers become ever more complex, they inevitably become smaller. This leads to a need for components which are fabricated and operate on increasingly smaller size scales. Quantum theory is already taken into account in microelectronics design. This article explores how quantum theory will need to be incorporated into computers in future in order to give them their components functionality. Computation tasks which depend on quantum effects will become possible. Physicists may have to reconsider their perspective on computation in the light of understanding developed in connection with universal quantum computers. (UK)
Energy Technology Data Exchange (ETDEWEB)
Rodgers, P
1998-03-01
There is more to information than a string of ones and zeroes the ability of ''quantum bits'' to be in two states at the same time could revolutionize information technology. In the mid-1930s two influential but seemingly unrelated papers were published. In 1935 Einstein, Podolsky and Rosen proposed the famous EPR paradox that has come to symbolize the mysteries of quantum mechanics. Two years later, Alan Turing introduced the universal Turing machine in an enigmatically titled paper, On computable numbers, and laid the foundations of the computer industry one of the biggest industries in the world today. Although quantum physics is essential to understand the operation of transistors and other solid-state devices in computers, computation itself has remained a resolutely classical process. Indeed it seems only natural that computation and quantum theory should be kept as far apart as possible surely the uncertainty associated with quantum theory is anathema to the reliability expected from computers? Wrong. In 1985 David Deutsch introduced the universal quantum computer and showed that quantum theory can actually allow computers to do more rather than less. The ability of particles to be in a superposition of more than one quantum state naturally introduces a form of parallelism that can, in principle, perform some traditional computing tasks faster than is possible with classical computers. Moreover, quantum computers are capable of other tasks that are not conceivable with their classical counterparts. Similar breakthroughs in cryptography and communication followed. (author)
Tartakovskii, Alexander
2012-07-01
Part I. Nanostructure Design and Structural Properties of Epitaxially Grown Quantum Dots and Nanowires: 1. Growth of III/V semiconductor quantum dots C. Schneider, S. Hofling and A. Forchel; 2. Single semiconductor quantum dots in nanowires: growth, optics, and devices M. E. Reimer, N. Akopian, M. Barkelid, G. Bulgarini, R. Heeres, M. Hocevar, B. J. Witek, E. Bakkers and V. Zwiller; 3. Atomic scale analysis of self-assembled quantum dots by cross-sectional scanning tunneling microscopy and atom probe tomography J. G. Keizer and P. M. Koenraad; Part II. Manipulation of Individual Quantum States in Quantum Dots Using Optical Techniques: 4. Studies of the hole spin in self-assembled quantum dots using optical techniques B. D. Gerardot and R. J. Warburton; 5. Resonance fluorescence from a single quantum dot A. N. Vamivakas, C. Matthiesen, Y. Zhao, C.-Y. Lu and M. Atature; 6. Coherent control of quantum dot excitons using ultra-fast optical techniques A. J. Ramsay and A. M. Fox; 7. Optical probing of holes in quantum dot molecules: structure, symmetry, and spin M. F. Doty and J. I. Climente; Part III. Optical Properties of Quantum Dots in Photonic Cavities and Plasmon-Coupled Dots: 8. Deterministic light-matter coupling using single quantum dots P. Senellart; 9. Quantum dots in photonic crystal cavities A. Faraon, D. Englund, I. Fushman, A. Majumdar and J. Vukovic; 10. Photon statistics in quantum dot micropillar emission M. Asmann and M. Bayer; 11. Nanoplasmonics with colloidal quantum dots V. Temnov and U. Woggon; Part IV. Quantum Dot Nano-Laboratory: Magnetic Ions and Nuclear Spins in a Dot: 12. Dynamics and optical control of an individual Mn spin in a quantum dot L. Besombes, C. Le Gall, H. Boukari and H. Mariette; 13. Optical spectroscopy of InAs/GaAs quantum dots doped with a single Mn atom O. Krebs and A. Lemaitre; 14. Nuclear spin effects in quantum dot optics B. Urbaszek, B. Eble, T. Amand and X. Marie; Part V. Electron Transport in Quantum Dots Fabricated by
Quantum fields and dissipation
International Nuclear Information System (INIS)
Henning, P.
1996-06-01
The description of thermal or non-equilibrium systems necessitates a quantum field theory which differs from the usual approach in two aspects: 1. The Hilbert space is doubled; 2. Stable quasi-particles do not exist in interacting systems. A mini-review of these two aspects is given from a practical viewpoint including two applications. For thermal states it is shown how infrared divergences occuring in perturbative quasi-particle theories are avoided, whereas for non-equilibrium states a memory effect is shown to arise in the thermalization. (orig.)
WKB corrections to the energy splitting in double-well potentials
Robnik, Marko; Salasnich, Luca
1997-01-01
By using the WKB quantization we deduce an analytical formula for the energy splitting in a double-well potential which is the usual Landau formula with additional quantum corrections. Then we analyze the accuracy of our formula for the double square well potential and the parabolic double-well potential.
Capacitance spectroscopy on n-type GaNAs/GaAs embedded quantum structure solar cells
Venter, Danielle; Bollmann, Joachim; Elborg, Martin; Botha, J. R.; Venter, André
2018-04-01
In this study, both deep level transient spectroscopy (DLTS) and admittance spectroscopy (AS) have been used to study the properties of electrically active deep level centers present in GaNAs/GaAs quantum wells (QWs) embedded in p-i-n solar cells. The structures were grown by molecular beam epitaxy (MBE). In particular, the electrical properties of samples with Si (n-type) doping of the QWs were investigated. DLTS revealed four deep level centers in the material, whereas only three were detected by AS. NextNano++ simulation software was used to model the sample band-diagrams to provide reasoning for the origin of the signals produced by both techniques.
'Quantum interference with slits' revisited
Rothman, Tony; Boughn, Stephen
2011-01-01
Marcella has presented a straightforward technique employing the Dirac formalism to calculate single- and double-slit interference patterns. He claims that no reference is made to classical optics or scattering theory and that his method therefore provides a purely quantum mechanical description of these experiments. He also presents his calculation as if no approximations are employed. We show that he implicitly makes the same approximations found in classical treatments of interference and that no new physics has been introduced. At the same time, some of the quantum mechanical arguments Marcella gives are, at best, misleading.
Quantum information. Teleportation - cryptography - quantum computer
International Nuclear Information System (INIS)
Koenneker, Carsten
2012-01-01
The following topics are dealt with: Reality in the test facility, quantum teleportation, the reality of quanta, interaction-free quantum measurement, rules for quantum computers, quantum computers with ions, spintronics with diamond, the limits of the quantum computers, a view in the future of quantum optics. (HSI)
Quantum ensembles of quantum classifiers.
Schuld, Maria; Petruccione, Francesco
2018-02-09
Quantum machine learning witnesses an increasing amount of quantum algorithms for data-driven decision making, a problem with potential applications ranging from automated image recognition to medical diagnosis. Many of those algorithms are implementations of quantum classifiers, or models for the classification of data inputs with a quantum computer. Following the success of collective decision making with ensembles in classical machine learning, this paper introduces the concept of quantum ensembles of quantum classifiers. Creating the ensemble corresponds to a state preparation routine, after which the quantum classifiers are evaluated in parallel and their combined decision is accessed by a single-qubit measurement. This framework naturally allows for exponentially large ensembles in which - similar to Bayesian learning - the individual classifiers do not have to be trained. As an example, we analyse an exponentially large quantum ensemble in which each classifier is weighed according to its performance in classifying the training data, leading to new results for quantum as well as classical machine learning.
Quantum computer games: quantum minesweeper
Gordon, Michal; Gordon, Goren
2010-07-01
The computer game of quantum minesweeper is introduced as a quantum extension of the well-known classical minesweeper. Its main objective is to teach the unique concepts of quantum mechanics in a fun way. Quantum minesweeper demonstrates the effects of superposition, entanglement and their non-local characteristics. While in the classical minesweeper the goal of the game is to discover all the mines laid out on a board without triggering them, in the quantum version there are several classical boards in superposition. The goal is to know the exact quantum state, i.e. the precise layout of all the mines in all the superposed classical boards. The player can perform three types of measurement: a classical measurement that probabilistically collapses the superposition; a quantum interaction-free measurement that can detect a mine without triggering it; and an entanglement measurement that provides non-local information. The application of the concepts taught by quantum minesweeper to one-way quantum computing are also presented.
Quantum Physics Without Quantum Philosophy
Dürr, Detlef; Zanghì, Nino
2013-01-01
It has often been claimed that without drastic conceptual innovations a genuine explanation of quantum interference effects and quantum randomness is impossible. This book concerns Bohmian mechanics, a simple particle theory that is a counterexample to such claims. The gentle introduction and other contributions collected here show how the phenomena of non-relativistic quantum mechanics, from Heisenberg's uncertainty principle to non-commuting observables, emerge from the Bohmian motion of particles, the natural particle motion associated with Schrödinger's equation. This book will be of value to all students and researchers in physics with an interest in the meaning of quantum theory as well as to philosophers of science.
Quantum measurement in quantum optics
International Nuclear Information System (INIS)
Kimble, H.J.
1993-01-01
Recent progress in the generation and application of manifestly quantum or nonclassical states of the electromagnetic field is reviewed with emphasis on the research of the Quantum Optics Group at Caltech. In particular, the possibilities for spectroscopy with non-classical light are discussed both in terms of improved quantitative measurement capabilities and for the fundamental alteration of atomic radiative processes. Quantum correlations for spatially extended systems are investigated in a variety of experiments which utilize nondegenerate parametric down conversion. Finally, the prospects for measurement of the position of a free mass with precision beyond the standard quantum limit are briefly considered. (author). 38 refs., 1 fig
An exactly soluble model of a shallow double well
Energy Technology Data Exchange (ETDEWEB)
Muñoz-Vega, R., E-mail: rodrigo.munoz@uacm.edu.mx [Universidad Autónoma de la Ciudad de México, Centro Histórico, Fray Servando Teresa de Mier 92, Col. Centro, Del. Cuauhtémoc, México DF, CP 06080 (Mexico); López-Chávez, E., E-mail: elopezc@hotmail.com [Universidad Autónoma de la Ciudad de México, Centro Histórico, Fray Servando Teresa de Mier 92, Col. Centro, Del. Cuauhtémoc, México DF, CP 06080 (Mexico); Salinas-Hernández, E., E-mail: esalinas@ipn.mx [ESCOM-IPN, Av Juan de Dios Bátiz s/n, Unidad Profesional Adolfo López Mateos, Col Lindavista, Del G A Madero, México DF, CP 07738 (Mexico); Flores-Godoy, J.-J., E-mail: job.flores@ibero.mx [Departamento de Física y Matemáticas, Universidad Iberoamericana, Prol. Paseo de la Reforma 880, Col Lomas de Santa Fe, Del A Obregón, México DF, CP 01219 (Mexico); Fernández-Anaya, G., E-mail: guillermo.fernandez@ibero.com [Departamento de Física y Matemáticas, Universidad Iberoamericana, Prol. Paseo de la Reforma 880, Col Lomas de Santa Fe, Del A Obregón, México DF, CP 01219 (Mexico)
2014-06-13
Shallow one-dimensional double-well potentials appear in atomic and molecular physics and other fields. Unlike the “deep” wells of macroscopic quantum coherent systems, shallow double wells need not present low-lying two-level systems. We argue that this feature, the absence of a low-lying two-level system in certain shallow double wells, may allow the finding of new test grounds for quantum mechanics in mesoscopic systems. We illustrate the above ideas with a family of shallow double wells obtained from reflectionless potentials through the Darboux–Bäcklund transform. - Highlights: • We present double wells not conforming to the low-lying two-state system model. • Models similar to ours appear in atomic and molecular physics. • Here there is no classically prohibited region between wells. • The ground probability is peaked at the position of classical unstable equilibrium in this models.
International Nuclear Information System (INIS)
Silk, J.; Turner, M.S.
1986-04-01
The Zel'dovich spectrum of adiabatic density perturbations is a generic prediction of inflation. There is increasing evidence that when the spectrum is normalized by observational data on small scales, there is not enough power on large scales to account for the observed large-scale structure in the Universe. Decoupling the spectrum on large and small scales could solve this problem. As a means of decoupling the large and small scales we propose double inflation (i.e., two episodes of inflation). In this scenario the spectrum on large scales is determined by the first episode of inflation and those on small scales by a second episode of inflation. We present three models for such a scenario. By nearly saturating the large angular-scale cosmic microwave anisotropy bound, we can easily account for the observed large-scale structure. We take the perturbations on small scales to be very large, deltarho/rho approx. = 0.1 to 0.01, which results in the production of primordial black holes (PBHs), early formation of structure, reionization of the Universe, and a rich array of astrophysical events. The Ω-problem is also addressed by our scenario. Allowing the density perturbations produced by the second episode of inflation to be large also lessens the fine-tuning required in the scalar potential and makes reheating much easier. We briefly speculate on the possibility that the second episode of inflation proceeds through the nucleation of bubbles, which today manifest themselves as empty bubbles whose surfaces are covered with galaxies. 37 refs., 1 fig
Indian Academy of Sciences (India)
Home; Journals; Resonance – Journal of Science Education; Volume 5; Issue 9. Quantum Computing - Building Blocks of a Quantum Computer. C S Vijay Vishal Gupta. General Article Volume 5 Issue 9 September 2000 pp 69-81. Fulltext. Click here to view fulltext PDF. Permanent link:
International Nuclear Information System (INIS)
Doplicher, S.
1996-01-01
We review some recent result and work in progress on the quantum structure of spacetime at scales comparable with the Planck length; the models discussed here are operationally motivated by the limitations in the accuracy of localization of events in spacetime imposed by the interplay between quantum mechanics and classical general relativity. (orig.)
... Right Ventricle Menu Topics Topics FAQs Double Outlet Right Ventricle Double outlet right ventricle (DORV) is a rare form of congenital heart disease. En español Double outlet right ventricle (DORV) is a rare form of congenital ...
Pearsall, Thomas P
2017-01-01
This textbook employs a pedagogical approach that facilitates access to the fundamentals of Quantum Photonics. It contains an introductory description of the quantum properties of photons through the second quantization of the electromagnetic field, introducing stimulated and spontaneous emission of photons at the quantum level. Schrödinger’s equation is used to describe the behavior of electrons in a one-dimensional potential. Tunneling through a barrier is used to introduce the concept of nonlocality of an electron at the quantum level, which is closely-related to quantum confinement tunneling, resonant tunneling, and the origin of energy bands in both periodic (crystalline) and aperiodic (non-crystalline) materials. Introducing the concepts of reciprocal space, Brillouin zones, and Bloch’s theorem, the determination of electronic band structure using the pseudopotential method is presented, allowing direct computation of the band structures of most group IV, group III-V, and group II-VI semiconducto...
International Nuclear Information System (INIS)
Hawking, S.W.
1984-01-01
The subject of these lectures is quantum effects in cosmology. The author deals first with situations in which the gravitational field can be treated as a classical, unquantized background on which the quantum matter fields propagate. This is the case with inflation at the GUT era. Nevertheless the curvature of spacetime can have important effects on the behaviour of the quantum fields and on the development of long-range correlations. He then turns to the question of the quantization of the gravitational field itself. The plan of these lectures is as follows: Euclidean approach to quantum field theory in flat space; the extension of techniques to quantum fields on a curved background with the four-sphere, the Euclidean version of De Sitter space as a particular example; the GUT era; quantization of the gravitational field by Euclidean path integrals; mini superspace model. (Auth.)
Rae, Alastair I M
2016-01-01
A Thorough Update of One of the Most Highly Regarded Textbooks on Quantum Mechanics Continuing to offer an exceptionally clear, up-to-date treatment of the subject, Quantum Mechanics, Sixth Edition explains the concepts of quantum mechanics for undergraduate students in physics and related disciplines and provides the foundation necessary for other specialized courses. This sixth edition builds on its highly praised predecessors to make the text even more accessible to a wider audience. It is now divided into five parts that separately cover broad topics suitable for any general course on quantum mechanics. New to the Sixth Edition * Three chapters that review prerequisite physics and mathematics, laying out the notation, formalism, and physical basis necessary for the rest of the book * Short descriptions of numerous applications relevant to the physics discussed, giving students a brief look at what quantum mechanics has made possible industrially and scientifically * Additional end-of-chapter problems with...
Richter, Johannes; Farnell, Damian; Bishop, Raymod
2004-01-01
The investigation of magnetic systems where quantum effects play a dominant role has become a very active branch of solid-state-physics research in its own right. The first three chapters of the "Quantum Magnetism" survey conceptual problems and provide insights into the classes of systems considered, namely one-dimensional, two-dimensional and molecular magnets. The following chapters introduce the methods used in the field of quantum magnetism, including spin wave analysis, exact diagonalization, quantum field theory, coupled cluster methods and the Bethe ansatz. The book closes with a chapter on quantum phase transitions and a contribution that puts the wealth of phenomena into the context of experimental solid-state physics. Closing a gap in the literature, this volume is intended both as an introductory text at postgraduate level and as a modern, comprehensive reference for researchers in the field.
International Nuclear Information System (INIS)
Steane, Andrew
1998-01-01
The subject of quantum computing brings together ideas from classical information theory, computer science, and quantum physics. This review aims to summarize not just quantum computing, but the whole subject of quantum information theory. Information can be identified as the most general thing which must propagate from a cause to an effect. It therefore has a fundamentally important role in the science of physics. However, the mathematical treatment of information, especially information processing, is quite recent, dating from the mid-20th century. This has meant that the full significance of information as a basic concept in physics is only now being discovered. This is especially true in quantum mechanics. The theory of quantum information and computing puts this significance on a firm footing, and has led to some profound and exciting new insights into the natural world. Among these are the use of quantum states to permit the secure transmission of classical information (quantum cryptography), the use of quantum entanglement to permit reliable transmission of quantum states (teleportation), the possibility of preserving quantum coherence in the presence of irreversible noise processes (quantum error correction), and the use of controlled quantum evolution for efficient computation (quantum computation). The common theme of all these insights is the use of quantum entanglement as a computational resource. It turns out that information theory and quantum mechanics fit together very well. In order to explain their relationship, this review begins with an introduction to classical information theory and computer science, including Shannon's theorem, error correcting codes, Turing machines and computational complexity. The principles of quantum mechanics are then outlined, and the Einstein, Podolsky and Rosen (EPR) experiment described. The EPR-Bell correlations, and quantum entanglement in general, form the essential new ingredient which distinguishes quantum from
Energy Technology Data Exchange (ETDEWEB)
Steane, Andrew [Department of Atomic and Laser Physics, University of Oxford, Clarendon Laboratory, Oxford (United Kingdom)
1998-02-01
The subject of quantum computing brings together ideas from classical information theory, computer science, and quantum physics. This review aims to summarize not just quantum computing, but the whole subject of quantum information theory. Information can be identified as the most general thing which must propagate from a cause to an effect. It therefore has a fundamentally important role in the science of physics. However, the mathematical treatment of information, especially information processing, is quite recent, dating from the mid-20th century. This has meant that the full significance of information as a basic concept in physics is only now being discovered. This is especially true in quantum mechanics. The theory of quantum information and computing puts this significance on a firm footing, and has led to some profound and exciting new insights into the natural world. Among these are the use of quantum states to permit the secure transmission of classical information (quantum cryptography), the use of quantum entanglement to permit reliable transmission of quantum states (teleportation), the possibility of preserving quantum coherence in the presence of irreversible noise processes (quantum error correction), and the use of controlled quantum evolution for efficient computation (quantum computation). The common theme of all these insights is the use of quantum entanglement as a computational resource. It turns out that information theory and quantum mechanics fit together very well. In order to explain their relationship, this review begins with an introduction to classical information theory and computer science, including Shannon's theorem, error correcting codes, Turing machines and computational complexity. The principles of quantum mechanics are then outlined, and the Einstein, Podolsky and Rosen (EPR) experiment described. The EPR-Bell correlations, and quantum entanglement in general, form the essential new ingredient which distinguishes quantum from
Complex Langevin simulation of real time quantum evolution
International Nuclear Information System (INIS)
Ilgenfritz, E.M.; Kripfganz, J.
1986-07-01
Complex Langevin methods are used to study the time evolution of quantum mechanical wave packets. We do not need any Feynman ε regularization for the numerical evaluation of the double time path integral. (author)
Indication for quantum Darwinism in electron billiards
Brunner, R.; Akis, R.; Meisels, R.; Kuchar, F.; Ferry, D. K.
2010-02-01
In this paper, we investigate the dynamics in electron billiards by using classical and quantum mechanical calculations. We report on the existence of pointer states in single-dot and double-dot electron billiards. Additionally, we show that the two types of pointer states have the propensity to create offspring, i.e. they can be observed in the individual modes propagating between the external reservoirs. This can be understood as an indication that quantum Darwinism is present in the electron billiards.
Quantum mechanics with quantum time
International Nuclear Information System (INIS)
Kapuscik, E.
1984-01-01
Using a non-canonical Lie structure of classical mechanics a new algebra of quantum mechanical observables is constructed. The new algebra, in addition to the notion of classical time, makes it possible to introduce the notion of quantum time. A new type of uncertainty relation is derived. (author)
Proceedings of quantum field theory, quantum mechanics, and quantum optics
International Nuclear Information System (INIS)
Dodonov, V.V.; Man; ko, V.I.
1991-01-01
This book contains papers presented at the XVIII International Colloquium on Group Theoretical Methods in Physics held in Moscow on June 4-9, 1990. Topics covered include; applications of algebraic methods in quantum field theory, quantum mechanics, quantum optics, spectrum generating groups, quantum algebras, symmetries of equations, quantum physics, coherent states, group representations and space groups
Double hard scattering without double counting
Energy Technology Data Exchange (ETDEWEB)
Diehl, Markus [Deutsches Elektronen-Synchrotron (DESY), Hamburg (Germany); Gaunt, Jonathan R. [VU Univ. Amsterdam (Netherlands). NIKHEF Theory Group; Schoenwald, Kay [Deutsches Elektronen-Synchrotron (DESY), Zeuthen (Germany)
2017-02-15
Double parton scattering in proton-proton collisions includes kinematic regions in which two partons inside a proton originate from the perturbative splitting of a single parton. This leads to a double counting problem between single and double hard scattering. We present a solution to this problem, which allows for the definition of double parton distributions as operator matrix elements in a proton, and which can be used at higher orders in perturbation theory. We show how the evaluation of double hard scattering in this framework can provide a rough estimate for the size of the higher-order contributions to single hard scattering that are affected by double counting. In a numeric study, we identify situations in which these higher-order contributions must be explicitly calculated and included if one wants to attain an accuracy at which double hard scattering becomes relevant, and other situations where such contributions may be neglected.
Double hard scattering without double counting
International Nuclear Information System (INIS)
Diehl, Markus; Gaunt, Jonathan R.
2017-02-01
Double parton scattering in proton-proton collisions includes kinematic regions in which two partons inside a proton originate from the perturbative splitting of a single parton. This leads to a double counting problem between single and double hard scattering. We present a solution to this problem, which allows for the definition of double parton distributions as operator matrix elements in a proton, and which can be used at higher orders in perturbation theory. We show how the evaluation of double hard scattering in this framework can provide a rough estimate for the size of the higher-order contributions to single hard scattering that are affected by double counting. In a numeric study, we identify situations in which these higher-order contributions must be explicitly calculated and included if one wants to attain an accuracy at which double hard scattering becomes relevant, and other situations where such contributions may be neglected.
International Nuclear Information System (INIS)
Basdevant, J.L.; Dalibart, J.
1997-01-01
This pedagogical book gives an initiation to the principles and practice of quantum mechanics. A large part is devoted to experimental facts and to their analysis: concrete facts, phenomena and applications related to fundamental physics, elementary particles, astrophysics, high-technology, semi-conductors, micro-electronics and lasers. The book is divided in 22 chapters dealing with: quantum phenomena, wave function and Schroedinger equation, physical units and measurements, energy quantification of some simple systems, Hilbert space, Dirac formalism and quantum mechanics postulates, two-state systems and ammonia Maser principle, bands theory and crystals conductibility, commutation of observables, Stern and Gerlach experiment, approximation methods, kinetic momentum in quantum mechanics, first description of atoms, 1/2 spin formalism and magnetic resonance, Lagrangian, Hamiltonian and Lorentz force in quantum mechanics, addition of kinetic momenta and fine and hyper-fine structure of atomic lines, identical particle systems and Pauli principle, qualitative physics and scale of size of some microscopic and macroscopic phenomena, systems evolution, collisions and cross sections, invariance and conservation laws, quantum mechanics and astrophysics, and historical aspects of quantum mechanics. (J.S.)
Cariolaro, Gianfranco
2015-01-01
This book demonstrates that a quantum communication system using the coherent light of a laser can achieve performance orders of magnitude superior to classical optical communications Quantum Communications provides the Masters and PhD signals or communications student with a complete basics-to-applications course in using the principles of quantum mechanics to provide cutting-edge telecommunications. Assuming only knowledge of elementary probability, complex analysis and optics, the book guides its reader through the fundamentals of vector and Hilbert spaces and the necessary quantum-mechanical ideas, simply formulated in four postulates. A turn to practical matters begins with and is then developed by: · development of the concept of quantum decision, emphasizing the optimization of measurements to extract useful information from a quantum system; · general formulation of a transmitter–receiver system · particular treatment of the most popular quantum co...