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Sample records for p-i-n detectors surface

  1. Study of araldite in edge protection of n-type and p-type surface barrier detectors

    International Nuclear Information System (INIS)

    Alencar, M.A.V.; Jesus, E.F.O.; Lopes, R.T.

    1995-01-01

    The aim of this work is the realization of a comparative study between the surface barrier detectors performance n and type using the epoxy resin Araldite as edge protection material with the purpose of determining which type of detector (n or p) the use of Araldite is more indicated. The surface barrier detectors were constructed using n and p type silicon wafer with resistivity of 3350Ω.cm and 5850 Ω.cm respectively. In the n type detectors, the metals used as ohmic and rectifier contacts were the Al and Au respectively, while in the p type detectors, the ohmic and rectifier contacts were Au and Al. All metallic contacts were done by evaporation in high vacuum (∼10 -4 Torr) and with deposit of 40 μm/cm 2 . The obtained results for the detectors (reverse current of -350nA and resolution from 21 to 26 keV for p type detectors and reserve current of 1μA and resolution from 44 to 49 keV for n type detectors) tend to demonstrate that use of epoxy resin Araldite in the edge protection is more indicated to p type surface barrier detectors. (author). 3 refs., 4 figs., 1 tab

  2. Improved charge collection of the buried p-i-n a-Si:H radiation detectors

    International Nuclear Information System (INIS)

    Fujieda, I.; Cho, G.; Conti, M.; Drewery, J.; Kaplan, S.N.; Perez-Mendez, V.; Qureshi, S.; Street, R.A.

    1989-09-01

    Charge collection in hydrogenated amorphous silicon (a-Si:H) radiation detectors is improved for high LET particle detection by adding thin intrinsic layers to the usual p-i-n structure. This buried p-i-n structure enables us to apply higher bias and the electric field is enhanced. When irradiated by 5.8 MeV α particles, the 5.7 μm thick buried p-i-n detector with bias 300V gives a signal size of 60,000 electrons, compared to about 20,000 electrons with the simple p-i-n detectors. The improved charge collection in the new structure is discussed. The capability of tailoring the field profile by doping a-Si:H opens a way to some interesting device structures. 17 refs., 7 figs

  3. Method for the preparation of n-i-p type radiation detector from silicon

    International Nuclear Information System (INIS)

    Keleti, J.; Toeroek, T.; Lukacs, J.; Molnar, I.

    1978-01-01

    The patent describes a procedure for the preparation of n-i-p type silicon radiation detectors. The aim was to provide an adaquate procedure for the production of α, β, γ-detectors from silicon available on the market, either p-type single crystal silicon characterised by its boron level. The procedure and the 9 claims are illustrated by two examples. (Sz.J.)

  4. High performance p-i-n CdTe and CdZnTe detectors

    CERN Document Server

    Khusainov, A K; Ilves, A G; Morozov, V F; Pustovoit, A K; Arlt, R D

    1999-01-01

    A breakthrough in the performance of p-i-n CdTe and CdZnTe detectors is reported. The detector stability has been significantly improved, allowing their use in precise gamma and XRF applications. Detectors with energy resolution close to Si and Ge were produced operating with only -30--35 deg. C cooling (by a Peltier cooler of 15x15x10 mm size and a consumed power less than 5 W). Presently detectors with volume of up to 300 mm sup 3 are available. In terms of photoelectric effect efficiency it corresponds to HPGe detectors with volumes of about 1.5 cm sup 3. The possibilities of further improvement of CdTe and CdZnTe detector characteristics are discussed in this paper.

  5. P-type silicon surface barrier detector used for x-ray dosimetry

    International Nuclear Information System (INIS)

    Yamamoto, Hisao; Hatakeyama, Satoru; Norimura, Toshiyuki; Tsuchiya, Takehiko

    1983-01-01

    Responses to X-rays of a P-type surface barrier detector fabricated in our laboratory were studied, taking into consideration the dependence on the temperature in order to examine its applicability to dosimetry of short-range radiation. The study was also made in the case of N-type surface barrier detector. At room temperature, the short-circuit current increased linearly with exposure dose rate (15 - 50 R/min) for N- and P-type detectors. The open-circuit voltage showed a nonlinear dependence. With increasing temperature, the short-circuit current for the N-type detector was approximately constant up to 30 0 C and then decreased, though the open-circuit voltage decreased linearly. For the P- type detector, both open-circuit voltage and short-circuit current decreased almost linearly with increasing temperature. While a P-type detector is still open to some improvements, these results indicate that it can be used as a dosimeter. (author)

  6. A final report for Gallium arsenide P-I-N detectors for high-sensitivity imaging of thermal neutrons

    CERN Document Server

    Vernon, S M

    1999-01-01

    This SBIR Phase I developed neutron detectors made FR-om gallium arsenide (GaAs) p-type/ intrinsic/n-type (P-I-N) diodes grown by metalorganic chemical vapor deposition (MOCVD) onto semi-insulating (S1) bulk GaAs wafers. A layer of isotonically enriched boron-10 evaporated onto the FR-ont surface serves to convert incoming neutrons into lithium ions and a 1.47 MeV alpha particle which creates electron-hole pairs that are detected by the GaAs diode. Various thicknesses of ''intrinsic'' (I) undoped GaAs were tested, as was use of a back-surface field (BSF) formed FR-om a layer of Al sub x Ga sub 1 sub - sub x As. Schottky-barrier diodes formed FR-om the same structures without the p+ GaAs top layer were tested as a comparison. After mesa etching and application of contacts, devices were tested in visible light before application of the boron coating. Internal quantum efficiency (IQE) of the best diode near the GaAs bandedge is over 90%. The lowest dark current measured is 1 x 10 sup - sup 1 sup 2 amps at -1 V o...

  7. Single n+-i-n+ InP nanowires for highly sensitive terahertz detection.

    Science.gov (United States)

    Peng, Kun; Parkinson, Patrick; Gao, Qian; Boland, Jessica L; Li, Ziyuan; Wang, Fan; Mokkapati, Sudha; Fu, Lan; Johnston, Michael B; Tan, Hark Hoe; Jagadish, Chennupati

    2017-03-24

    Developing single-nanowire terahertz (THz) electronics and employing them as sub-wavelength components for highly-integrated THz time-domain spectroscopy (THz-TDS) applications is a promising approach to achieve future low-cost, highly integrable and high-resolution THz tools, which are desirable in many areas spanning from security, industry, environmental monitoring and medical diagnostics to fundamental science. In this work, we present the design and growth of n + -i-n + InP nanowires. The axial doping profile of the n + -i-n + InP nanowires has been calibrated and characterized using combined optical and electrical approaches to achieve nanowire devices with low contact resistances, on which the highly-sensitive InP single-nanowire photoconductive THz detectors have been demonstrated. While the n + -i-n + InP nanowire detector has a only pA-level response current, it has a 2.5 times improved signal-to-noise ratio compared with the undoped InP nanowire detector and is comparable to traditional bulk THz detectors. This performance indicates a promising path to nanowire-based THz electronics for future commercial applications.

  8. Ge-semiconductor detectors with a p-implanted n+-contact

    International Nuclear Information System (INIS)

    Protic, D.; Riepe, G.

    1979-01-01

    P-implanted large-surface-detectors with improved properties can be produced by implantation of the n + -contact with relatively low dose and high energy. After an annealing process a nearly perfect lattice structure is obtained. By a subsequent p-implantation step with high dose and low energy, the surface restisivity can be reduced. The p + -contacts are obtained by B-implantation. (DG) [de

  9. P.I.X.S.C.A.N.: a micro-CT scanner for small animal based on hybrid pixel detectors

    International Nuclear Information System (INIS)

    Khoury, R.

    2008-03-01

    Since more than a dozen years, efforts were led in the field of X-ray tomography for small animals, principally for the improvement of spatial resolution and the diminution of the absorbed dose. The C.P.P.M. developed the micro-CT P.I.X.S.C.A.N. based on the hybrid pixel detector X.P.A.D.2. In this context, my thesis work consists in studying the demonstrator P.I.X.S.C.A.N./X.P.A.D.2 and the contribution of the hybrid pixels in the imaging of small animals. A fast analytical simulation, FastSimu, was developed. An extrapolation of the performance of the demonstrator P.I.X.S.C.A.N, as well as the validation of the results obtained with the measured data, were led by means of the analytical simulator FastSimu. The demonstrator P.I.X.S.C.A.N./X.P.A.D.2 allowed to obtain reconstructed images with a rather good quality for a relatively weak absorbed dose. Its spatial resolution is degraded by the high number of defective pixels of the detector X.P.A.D.2. Beyond this study, a new version of the demonstrator P.I.X.S.C.A.N./X.P.A.D.2 is under construction. This latter, characterized by two and a half times smaller pixels and about no defective pixels will bring a considerable improvement on spatial resolution. (author)

  10. Simulation of Si P-i-N diodes for use in a positron emission tomography detector module

    International Nuclear Information System (INIS)

    Bailey, M.J.; University of Wollongong, NSW; Rosenfeld, A.; Lerch, M.; Taylor, G.; Heiser, G.

    2000-01-01

    Full text: Current Positron Emission Tomography (PET) systems consist of scintillation crystals optically coupled to photomultiplier tubes with associated electronics used to detect photons generated within the scintillator. The cost of photomultiplier tubes (PMTs) is considerable and is the major factor in the cost of PET systems. It has been suggested that Si P-i-N diodes can replace PMTs and provide Depth of Interaction (DOI) information for improved spatial resolution. Si P-i-N diodes of 25mm x 300μm and 3mm x 300μm cross sectional area were simulated using a 2D Monte Carlo program (PClD V5) from the UNSW photovoltics group. The diffusion lengths were varied from 0.5μm to 5μm and the charge collection characteristics of the diodes were observed. A 400nm monochromatic light source was used for the excitation as an approximation of the mean wavelength output from LSO crystal. The diodes were reverse biased with voltages 40V, 20V and 10V. The optimum diffusion length of up to 2μm and bias voltage of 40V were determined using the electric field, current density, carrier density and potential distribution results. These parameters will be used for the design of a device for optimal charge collection capabilities for the wavelengths encountered in PET applications. Further studies need to be conducted using spectra from LSO rather than a monochromatic source. The response of various Si P-i-N diodes to a monochromatic light source have been modeled in order to design a device for application in a PET detector module for DOI measurements. The charge collection within the first 2μm has been emphasized due to the strong absorption of photons from LSO near the surface.Copyright (2000) Australasian College of Physical Scientists and Engineers in Medicine

  11. A Needle-Type p-i-n Junction Semiconductor Detector for In-Vivo Measurement of Beta Tracer Activity

    Energy Technology Data Exchange (ETDEWEB)

    Lauber, A; Rosencrantz, B

    1964-10-15

    A miniature detector probe has been developed for in-vivo detection of beta tracer activity. A lithium-drifted p-i-n detector shaped as a cylinder 0.9 mm in diameter and 3 mm long acts as the sensing element. The detector is encased in a stainless steel tube 50 mm long, fastened to a holder fitted with a miniature coaxial contact. The free end of the tube has a syringe-like, entirely tight tip. The steel tube has an outer diameter of 1.4 mm except for 10 mm at the free end where the outer diameter is 1.1 mm corresponding to a wall thickness of 005 mm. The detector is placed in the 1.1 mm part of the tube. The construction and the properties of the probe are described.

  12. A Needle-Type p-i-n Junction Semiconductor Detector for In-Vivo Measurement of Beta Tracer Activity

    International Nuclear Information System (INIS)

    Lauber, A.; Rosencrantz, B.

    1964-10-01

    A miniature detector probe has been developed for in-vivo detection of beta tracer activity. A lithium-drifted p-i-n detector shaped as a cylinder 0.9 mm in diameter and 3 mm long acts as the sensing element. The detector is encased in a stainless steel tube 50 mm long, fastened to a holder fitted with a miniature coaxial contact. The free end of the tube has a syringe-like, entirely tight tip. The steel tube has an outer diameter of 1.4 mm except for 10 mm at the free end where the outer diameter is 1.1 mm corresponding to a wall thickness of 005 mm. The detector is placed in the 1.1 mm part of the tube. The construction and the properties of the probe are described

  13. Development of neutron detector using sensor type surface barrier with (n,p) and (n,α) converters

    International Nuclear Information System (INIS)

    Madi Filho, Tufic

    1999-01-01

    A Si semiconductor detector, surface barrier type, with a slim film of a converter material capable to produce charged particles was used as a sensor of neutrons in an environment of a zero power reactor. Two types of converters were used to improve the detection efficiency: (1) the polyethylene, n(CH 2 ), which produces recoil protons from the (n,p) interaction and, (2) the 10 B which generates a particle from the (n,alpha) reaction. The optimal thickness of those converters was determined experimentally and specifically for the polyethylene a mathematical model R(ips) = ε p · N 0 ·(1-e -Σ·Χ ) ·e -μ ·Χ + ε n · N 0 · -Σ · Χ was used to fit to the experimental data. For the polyethylene converter the thickness was of 0.058 cm (62.64 mg.cm -2 ) while for the 10 B it was equal to 6.55 [μm (1.54 mg.cm -2 ). The converter of polyethylene or 10 B improved the detection efficiency to a factor of 4.7 and 3.0 respectively. The comparison of the spectrum of the background radiation with the spectra of the recoil protons and the a radiation from the 10 B it was concluded that the polyethylene presented better performance than the 10 B converter. (author)

  14. Very high resolution detection of gamma radiation at room-temperature using P-I-N detectors of CdZnTe and HgCdTe

    Science.gov (United States)

    Hamilton, W. J.; Rhiger, D. R.; Sen, S.; Kalisher, M. H.; James, K.; Reid, C. P.; Gerrish, V.; Baccash, C. O.

    1994-08-01

    High-energy photon detectors have been constructed by engineering and fabricating p-i-n diode structures consisting of bulk CdZnTe and epitaxial HgCdTe. The p-i-n structure was obtained by liquid-phase epitaxial growth of p and n doped HgCdTe layers on 'intrinsic' CdZnTe material about 1mm thick and approximately 25mm square. Curve tracing shows I-V curves with diode characteristics having resistivity above 1011 Omega -cm and leakage current of less than 400 pA to about - 60V reverse bias on a typical test piece approximately 5 x 8 x 1 mm. Spectra of similar test pieces have been obtained at room temperature with various nuclear isotopic sources over the range of 22 keV to 662 keV which show exceptionally high energy resolution. Resolution as good as 1.82% FWHM was obtained for the 356 keV line of 133Ba with a P/V = 3.4. The performance of these detectors combined with contemporary infrared technology capable of fabricating 2D arrays of these II-VI materials opens up manifold exciting applications in astrophysics, medical, industrial, environmental, and defense spectroscopy and imaging.

  15. Investigation of n{sup +} surface events in HPGe detectors for liquid argon background rejection in GERDA

    Energy Technology Data Exchange (ETDEWEB)

    Lehnert, Bjoern [TU-Dresden, Dresden (Germany); Collaboration: GERDA-Collaboration

    2015-07-01

    The GERDA experiment is searching for neutrinoless double beta decay (0νββ) in {sup 76}Ge using an array of germanium detectors immersed in liquid argon (LAr). Phase II of the experiment aims to improve the background level by a factor 10 in order to reach 10{sup -3} counts / (kg.keV.yr). A strong suppression technique is required to suppress the intrinsic LAr background of {sup 42}Ar/{sup 42}K. 30 newly produced p-type Broad Energy Germanium (BEGe) detectors will be deployed in Phase II. The n{sup +} electrode of the GERDA BEGe detectors is covering 96-98 % of the surface and is between 0.5 and 1.2 mm thick. Betas from the {sup 42}K decay can penetrated the detector surface and deposit energies within the 0νββ region. Experiences from GERDA Phase I show that these surface events are the dominate background component without suppression. Energy depositions inside the n{sup +} layer create pulse shapes that are slower than those from interactions in the bulk. This talk presents a rejection technique for those events. The signal development inside the n{sup +} layer is modeled and applied in Geant4 Monte Carlo simulations. The simulations are compared with data for {sup 241}Am and {sup 90}Sr calibration source measurements. The suppression capabilities are extrapolated for {sup 42}K in GERDA Phase II.

  16. P-spray implant optimization for the fabrication of n-in-p microstrip detectors

    International Nuclear Information System (INIS)

    Fleta, Celeste; Lozano, Manuel; Pellegrini, Giulio; Campabadal, Francesca; Rafi, Joan Marc; Ullan, Miguel

    2007-01-01

    This work reports on an optimization study of the p-spray profile for the fabrication of n-in-p microstrip silicon detectors. A thorough simulation process of the expected electrical performance of different p-spray technologies was carried out. The best technological options for the p-spray implantation were chosen for the fabrication of miniature n-in-p microstrip detectors on high resistivity FZ wafers at the IMB-CNM clean room. The main conclusions derived from the simulations, and the electrical performance of a sample of the fabricated devices is presented

  17. ATLAS irradiation studies of n-in-n and p-in-n silicon microstrip detectors

    CERN Document Server

    Allport, P P; Buttar, C M; Carter, J; Drage, L M; Ferrère, D; Morgan, D; Riedler, P; Robinson, D

    1999-01-01

    Prior to the module production of the ATLAS silicon microstrip tracker for the barrel and the forward wheels, the characterisation of full-size prototype silicon detectors after radiation to fluences corresponding to 10 years of ATLAS operation is required. The behaviour of p-in-n and n-in-n detectors produced by several manufacturers before and after irradiation to a fluence of 3*10/sup 14/ protons/cm/sup 2/ at the CERN PS facility is discussed. This article summarises some recent results from the ATLAS SCT collaboration. The measurements of leakage current, full depletion voltage, signal-to-noise ratio and charge collection efficiency are presented. Despite the better efficiency performance of n-in-n detectors below depletion, the collaboration chose the p-in-n technology due to its simpler and less costly production since good charge collection efficiencies were achieved at the desired maximum bias voltage. (14 refs).

  18. P.I.X.S.C.A.N.: a micro-CT scanner for small animal based on hybrid pixel detectors; PIXSCAN: micro-tomodensitrometre a pixels hybrides pour le petit animal

    Energy Technology Data Exchange (ETDEWEB)

    Khoury, R

    2008-03-15

    Since more than a dozen years, efforts were led in the field of X-ray tomography for small animals, principally for the improvement of spatial resolution and the diminution of the absorbed dose. The C.P.P.M. developed the micro-CT P.I.X.S.C.A.N. based on the hybrid pixel detector X.P.A.D.2. In this context, my thesis work consists in studying the demonstrator P.I.X.S.C.A.N./X.P.A.D.2 and the contribution of the hybrid pixels in the imaging of small animals. A fast analytical simulation, FastSimu, was developed. An extrapolation of the performance of the demonstrator P.I.X.S.C.A.N, as well as the validation of the results obtained with the measured data, were led by means of the analytical simulator FastSimu. The demonstrator P.I.X.S.C.A.N./X.P.A.D.2 allowed to obtain reconstructed images with a rather good quality for a relatively weak absorbed dose. Its spatial resolution is degraded by the high number of defective pixels of the detector X.P.A.D.2. Beyond this study, a new version of the demonstrator P.I.X.S.C.A.N./X.P.A.D.2 is under construction. This latter, characterized by two and a half times smaller pixels and about no defective pixels will bring a considerable improvement on spatial resolution. (author)

  19. Design, fabrication and characterization of multi-guard-ring furnished p+n-n+ silicon strip detectors for future HEP experiments

    Science.gov (United States)

    Lalwani, Kavita; Jain, Geetika; Dalal, Ranjeet; Ranjan, Kirti; Bhardwaj, Ashutosh

    2016-07-01

    Si detectors, in various configurations (strips and pixels), have been playing a key role in High Energy Physics (HEP) experiments due to their excellent vertexing and high precision tracking information. In future HEP experiments like upgrade of the Compact Muon Solenoid experiment (CMS) at the Large Hadron Collider (LHC), CERN and the proposed International Linear Collider (ILC), the Si tracking detectors will be operated in a very harsh radiation environment, which leads to both surface and bulk damage in Si detectors which in turn changes their electrical properties, i.e. change in the full depletion voltage, increase in the leakage current and decrease in the charge collection efficiency. In order to achieve the long term durability of Si-detectors in future HEP experiments, it is required to operate these detectors at very high reverse biases, beyond the full depletion voltage, thus requiring higher detector breakdown voltage. Delhi University (DU) is involved in the design, fabrication and characterization of multi-guard-ring furnished ac-coupled, single sided, p+n-n+ Si strip detectors for future HEP experiments. The design has been optimized using a two-dimensional numerical device simulation program (TCAD-Silvaco). The Si strip detectors are fabricated with eight-layers mask process using the planar fabrication technology by Bharat Electronic Lab (BEL), India. Further an electrical characterization set-up is established at DU to ensure the quality performance of fabricated Si strip detectors and test structures. In this work measurement results on non irradiated Si Strip detectors and test structures with multi-guard-rings using Current Voltage (IV) and Capacitance Voltage (CV) characterization set-ups are discussed. The effect of various design parameters, for example guard-ring spacing, number of guard-rings and metal overhang on breakdown voltage of test structures have been studied.

  20. Analysis of the auger recombination rate in P+N-n-N-N HgCdTe detectors for HOT applications

    Science.gov (United States)

    Schuster, J.; Tennant, W. E.; Bellotti, E.; Wijewarnasuriya, P. S.

    2016-05-01

    Infrared (IR) photon detectors must be cryogenically cooled to provide the highest possible performance, usually to temperatures at or below ~ 150K. Such low operating temperatures (Top) impose very stringent requirements on cryogenic coolers. As such, there is a constant push in the industry to engineer new detector architectures that operate at higher temperatures, so called higher operating temperature (HOT) detectors. The ultimate goal for HOT detectors is room temperature operation. While this is not currently possibly for photon detectors, significant increases in Top are nonetheless beneficial in terms of reduced size, weight, power and cost (SWAP-C). The most common HgCdTe IR detector architecture is the P+n heterostructure photodiode (where a capital letter indicates a wide band gap relative to the active layer or "AL"). A variant of this architecture, the P+N-n-N-N heterostructure photodiode, should have a near identical photo-response to the P+n heterostructure, but with significantly lower dark diffusion current. The P+N-n-N-N heterostructure utilizes a very low doped AL, surrounded on both sides by wide-gap layers. The low doping in the AL, allows the AL to be fully depleted, which drastically reduces the Auger recombination rate in that layer. Minimizing the Auger recombination rate reduces the intrinsic dark diffusion current, thereby increasing Top. Note when we use the term "recombination rate" for photodiodes, we are actually referring to the net generation and recombination of minority carriers (and corresponding dark currents) by the Auger process. For these benefits to be realized, these devices must be intrinsically limited and well passivated. The focus of this proceeding is on studying the fundamental physics of the intrinsic dark currents in ideal P+N-n-N-N heterostructures, namely Auger recombination. Due to the complexity of these devices, specifically the presence of multiple heterojunctions, numerical device modeling techniques must be

  1. A numerical model of p-n junctions bordering on surfaces

    Energy Technology Data Exchange (ETDEWEB)

    Altermatt, P.P.; Aberle, A.G.; Jianhua Zhao; Aihua Wang; Heiser, G. [University of New South Wales, Sydney (Australia). Centre for Photovolatic Engineering

    2002-10-01

    Many solar cell structures contain regions where the emitter p-n junction borders on the surface. If the surface is not well passivated, a large amount of recombination occurs in such regions. This type of recombination is influenced by the electrostatics of both the p-n junction and the surface, and hence it is different from the commonly described recombination phenomena occurring in the p-n junction within the bulk. We developed a two-dimensional model for the recombination mechanisms occurring in emitter p-n junctions bordering on surfaces. The model is validated by reproducing the experimental I-V curves of specially designed silicon solar cells. It is shown under which circumstances a poor surface passivation, near where the p-n junction borders on the surface, reduces the fill factor and the open-circuit voltage. The model can be applied to many other types of solar cells. (author)

  2. T-CAD analysis of electric fields in n-in-p silicon strip detectors in dependence on the p-stop pattern and doping concentration

    CERN Document Server

    Printz, Martin

    2015-01-01

    However, n-in-p detectors necessarily need an isolation layer of the n+ strips due to an accumula- tion layer of electrons caused by positive charge in the SiO$_2$ at the sensor surface. An additional implantation of acceptors like boron between the n+ strips cuts the co...

  3. Bulk and surface event identification in p-type germanium detectors

    Science.gov (United States)

    Yang, L. T.; Li, H. B.; Wong, H. T.; Agartioglu, M.; Chen, J. H.; Jia, L. P.; Jiang, H.; Li, J.; Lin, F. K.; Lin, S. T.; Liu, S. K.; Ma, J. L.; Sevda, B.; Sharma, V.; Singh, L.; Singh, M. K.; Singh, M. K.; Soma, A. K.; Sonay, A.; Yang, S. W.; Wang, L.; Wang, Q.; Yue, Q.; Zhao, W.

    2018-04-01

    The p-type point-contact germanium detectors have been adopted for light dark matter WIMP searches and the studies of low energy neutrino physics. These detectors exhibit anomalous behavior to events located at the surface layer. The previous spectral shape method to identify these surface events from the bulk signals relies on spectral shape assumptions and the use of external calibration sources. We report an improved method in separating them by taking the ratios among different categories of in situ event samples as calibration sources. Data from CDEX-1 and TEXONO experiments are re-examined using the ratio method. Results are shown to be consistent with the spectral shape method.

  4. BEGe detectors in GERDA Phase I - performance, physics analysis and surface events

    Energy Technology Data Exchange (ETDEWEB)

    Lazzaro, Andrea [Physik-Department E15, Technische Universitaet Muenchen (Germany); Collaboration: GERDA-Collaboration

    2014-07-01

    The Phase I of the Gerda experiment, which has concluded its data taking in Summer 2013, was based on coaxial HPGe detectors already used for IGEX and HdM experiments. In the upcoming Phase II customized Broad Energy Germanium (BEGe) detectors will provide the major contribution to the total exposure. The first set of BEGe detectors has been deployed in Gerda since June 2012. The data collected in Phase I show the performance achieved in terms of spectroscopy and pulse shape discrimination. In particular the strongest background source, the {sup 42}K beta decay from the liquid argon surrounding the detectors, has been effectively rejected. The signals due to beta decay on the detector surface are indeed characterized by a longer charge collection time. This talk focuses on this key feature of the BEGe-PSD.

  5. Noise in a-Si:H p-i-n detector diodes

    International Nuclear Information System (INIS)

    Cho, G.; Qureshi, S.; Drewery, J.S.; Jing, T.; Kaplan, S.N.; Lee, H.; Mireshghi, A.; Perez-Mendez, V.; Wildermuth, D.

    1991-10-01

    Noise of a-Si:H p-i-n diodes (5 ∼ 50 μm thick) under reverse bias was investigated. The current dependent 1/f type noise was found to be the main noise component at high bias. At low bias the thermal noise from a series resistance of the p-layer and of the metallic contacts is the dominant noise source which is unrelated to the reverse current through the diode. The noise associated with the p-layer resistance decreased significantly on annealing under reverse bias, reducing the total zero bias noise by a factor 2 approximately. The noise recovered to the original value on subsequent annealing without bias. In addition to the resistive noise there seems to be a shaping time independent noise component at zero biased diodes

  6. Performance of n-in-p pixel detectors irradiated at fluences up to $5x10^{15} n_{eq}/cm^{2}$ for the future ATLAS upgrades

    CERN Document Server

    INSPIRE-00219560; La Rosa, A.; Nisius, R.; Pernegger, H.; Richter, R.H.; Weigell, P.

    We present the results of the characterization of novel n-in-p planar pixel detectors, designed for the future upgrades of the ATLAS pixel system. N-in-p silicon devices are a promising candidate to replace the n-in-n sensors thanks to their radiation hardness and cost effectiveness, that allow for enlarging the area instrumented with pixel detectors. The n-in-p modules presented here are composed of pixel sensors produced by CiS connected by bump-bonding to the ATLAS readout chip FE-I3. The characterization of these devices has been performed with the ATLAS pixel read-out systems, TurboDAQ and USBPIX, before and after irradiation with 25 MeV protons and neutrons up to a fluence of 5x10**15 neq /cm2. The charge collection measurements carried out with radioactive sources have proven the feasibility of employing this kind of detectors up to these particle fluences. The collected charge has been measured to be for any fluence in excess of twice the value of the FE-I3 threshold, tuned to 3200 e. The first result...

  7. Scanning transient current study of the I-V stabilization phenomena in silicon detectors irradiated by fast neutrons

    International Nuclear Information System (INIS)

    Eremin, V.; Verbitskaya, E.; Sidorov, A.; Fretwurst, E.; Lindstrom, G.

    1996-03-01

    Investigation of the I-V stabilization phenomena in neutron irradiated silicon detectors has been carried out using scanning transient current technique (STCT) on non-irradiated PP + -p-n + detectors. The PP + -p-n + detectors were used to simulate the PP + -n-n + detectors irradiated beyond the space charge sign inversion (SCSI). Two mechanisms partially responsible for the I- V stabilization have been identified

  8. Processing of n{sup +}/p{sup −}/p{sup +} strip detectors with atomic layer deposition (ALD) grown Al{sub 2}O{sub 3} field insulator on magnetic Czochralski silicon (MCz-si) substrates

    Energy Technology Data Exchange (ETDEWEB)

    Härkönen, J., E-mail: jaakko.harkonen@helsinki.fi [Helsinki Institute of Physics (Finland); Tuovinen, E. [Helsinki Institute of Physics (Finland); VTT Technical Research Centre of Finland, Microsystems and Nanoelectronics (Finland); Luukka, P.; Gädda, A.; Mäenpää, T.; Tuominen, E.; Arsenovich, T. [Helsinki Institute of Physics (Finland); Junkes, A. [Institute for Experimental Physics, University of Hamburg (Germany); Wu, X. [VTT Technical Research Centre of Finland, Microsystems and Nanoelectronics (Finland); Picosun Oy, Tietotie 3, FI-02150 Espoo Finland (Finland); Li, Z. [School of Materials Science and Engineering, Xiangtan University, Xiangtan, Hunan 411105 (China)

    2016-08-21

    Detectors manufactured on p-type silicon material are known to have significant advantages in very harsh radiation environment over n-type detectors, traditionally used in High Energy Physics experiments for particle tracking. In p-type (n{sup +} segmentation on p substrate) position-sensitive strip detectors, however, the fixed oxide charge in the silicon dioxide is positive and, thus, causes electron accumulation at the Si/SiO{sub 2} interface. As a result, unless appropriate interstrip isolation is applied, the n-type strips are short-circuited. Widely adopted methods to terminate surface electron accumulation are segmented p-stop or p-spray field implantations. A different approach to overcome the near-surface electron accumulation at the interface of silicon dioxide and p-type silicon is to deposit a thin film field insulator with negative oxide charge. We have processed silicon strip detectors on p-type Magnetic Czochralski silicon (MCz-Si) substrates with aluminum oxide (Al{sub 2}O{sub 3}) thin film insulator, grown with Atomic Layer Deposition (ALD) method. The electrical characterization by current–voltage and capacitance−voltage measurement shows reliable performance of the aluminum oxide. The final proof of concept was obtained at the test beam with 200 GeV/c muons. For the non-irradiated detector the charge collection efficiency (CCE) was nearly 100% with a signal-to-noise ratio (S/N) of about 40, whereas for the 2×10{sup 15} n{sub eq}/cm{sup 2} proton irradiated detector the CCE was 35%, when the sensor was biased at 500 V. These results are comparable with the results from p-type detectors with the p-spray and p-stop interstrip isolation techniques. In addition, interestingly, when the aluminum oxide was irradiated with Co-60 gamma-rays, an accumulation of negative fixed oxide charge in the oxide was observed.

  9. Surface Alpha Interactions in P-Type Point-Contact HPGe Detectors: Maximizing Sensitivity of 76Ge Neutrinoless Double-Beta Decay Searches

    Science.gov (United States)

    Gruszko, Julieta

    Though the existence of neutrino oscillations proves that neutrinos must have non-zero mass, Beyond-the-Standard-Model physics is needed to explain the origins of that mass. One intriguing possibility is that neutrinos are Majorana particles, i.e., they are their own anti-particles. Such a mechanism could naturally explain the observed smallness of the neutrino masses, and would have consequences that go far beyond neutrino physics, with implications for Grand Unification and leptogenesis. If neutrinos are Majorana particles, they could undergo neutrinoless double-beta decay (0nBB), a hypothesized rare decay in which two antineutrinos annihilate one another. This process, if it exists, would be exceedingly rare, with a half-life over 1E25 years. Therefore, searching for it requires experiments with extremely low background rates. One promising technique in the search for 0nBB is the use of P-type point-contact (P-PC) high-purity Germanium (HPGe) detectors enriched in 76Ge, operated in large low-background arrays. This approach is used, with some key differences, by the MAJORANA and GERDA Collaborations. A problematic background in such large granular detector arrays is posed by alpha particles incident on the surfaces of the detectors, often caused by 222Rn contamination of parts or of the detectors themselves. In the MAJORANA DEMONSTRATOR, events have been observed that are consistent with energy-degraded alphas originating near the passivated surface of the detectors, leading to a potential background contribution in the region-of-interest for neutrinoless double-beta decay. However, it is also observed that when energy deposition occurs very close to the passivated surface, high charge trapping occurs along with subsequent slow charge re-release. This leads to both a reduced prompt signal and a measurable change in slope of the tail of a recorded pulse. Here we discuss the characteristics of these events and the development of a filter that can identify the

  10. Continuous Holdup Measurements with Silicon P-I-N Photodiodes

    International Nuclear Information System (INIS)

    Bell, Z.W.; Oberer, R.B.; Williams, J.A.; Smith, D.E.; Paulus, M.J.

    2002-01-01

    We report on the behavior of silicon P-I-N photodiodes used to perform holdup measurements on plumbing. These detectors differ from traditional scintillation detectors in that no high-voltage is required, no scintillator is used (gamma and X rays are converted directly by the diode), and they are considerably more compact. Although the small size of the diodes means they are not nearly as efficient as scintillation detectors, the diodes' size does mean that a detector module, including one or more diodes, pulse shaping electronics, analog-to-digital converter, embedded microprocessor, and digital interface can be realized in a package (excluding shielding) the size of a pocket calculator. This small size, coupled with only low-voltage power requirement, completely solid-state realization, and internal control functions allows these detectors to be strategically deployed on a permanent basis, thereby reducing or eliminating the need for manual holdup measurements. In this paper, we report on the measurement of gamma and X rays from 235 U and 238 U contained in steel pipe. We describe the features of the spectra, the electronics of the device and show how a network of them may be used to improve estimates of inventory in holdup

  11. Simulation based comparative analysis of photoresponse in front- and back-illuminated GaN P-I-N ultraviolet photodetectors

    Science.gov (United States)

    Wang, Jun; Guo, Jin; Xie, Feng; Wang, Guosheng; Wu, Haoran; Song, Man; Yi, Yuanyuan

    2016-10-01

    This paper presents the comparative analysis of influence of doping level and doping profile of the active region on zero bias photoresponse characteristics of GaN-based p-i-n ultraviolet (UV) photodetectors operating at front- and back-illuminated. A two dimensional physically-based computer simulation of GaN-based p-i-n UV photodetectors is presented. We implemented GaN material properties and physical models taken from the literature. It is shown that absorption layer doping profile has notable impacts on the photoresponse of the device. Especially, the effect of doping concentration and distribution of the absorption layer on photoresponse is discussed in detail. In the case of front illumination, comparative to uniform n-type doping, the device with n-type Gaussian doping profiles at absorption layer has higher responsivity. Comparative to front illumination, back illuminated detector with p-type doping profiles at absorption layer has higher maximum photoresponse, while the Gaussian doping profiles have a weaker ability to enhance the device responsivity. It is demonstrated that electric field distribution, mobility degradation, and recombinations are jointly responsible for the variance of photoresponse. Our work enriches the understanding and utilization of GaN based p-i-n UV photodetectors.

  12. Signal amplification and leakage current suppression in amorphous silicon p-i-n diodes by field profile tailoring

    International Nuclear Information System (INIS)

    Hong, W.S.; Zhong, F.; Mireshghi, A.; Perez-Mendez, V.

    1999-01-01

    The performance of amorphous silicon p-i-n diodes as radiation detectors in terms of signal amplitude can be greatly improved when there is a built-in signal gain mechanism. The authors describe an avalanche gain mechanism which is achieved by introducing stacked intrinsic, p-type, and n-type layers into the diode structure. They replaced the intrinsic layer of the conventional p-i-n diode with i 1 -p-i 2 -n-i 3 multilayers. The i 2 layer (typically 1 ∼ 3 microm) achieves an electric field > 10 6 V/cm, while maintaining the p-i interfaces to the metallic contact at electric fields 4 V/cm, when the diode is fully depleted. For use in photo-diode applications the whole structure is less than 10 microm thick. Avalanche gains of 10 ∼ 50 can be obtained when the diode is biased to ∼ 500 V. Also, dividing the electrodes to strips of 2 microm width and 20 microm pitch reduced the leakage current up to an order of magnitude, and increased light transmission without creating inactive regions

  13. Leakage current of amorphous silicon p-i-n diodes made by ion shower doping

    International Nuclear Information System (INIS)

    Kim, Hee Joon; Cho, Gyuseong; Choi, Joonhoo; Jung, Kwan-Wook

    2002-01-01

    In this letter, we report the leakage current of amorphous silicon (a-Si:H) p-i-n photodiodes, of which the p layer is formed by ion shower doping. The ion shower doping technique has an advantage over plasma-enhanced chemical vapor deposition (PECVD) in the fabrication of a large-area amorphous silicon flat-panel detector. The leakage current of the ion shower diodes shows a better uniformity within a 30 cmx40 cm substrate than that of the PECVD diodes. However, it shows a higher leakage current of 2-3 pA/mm 2 at -5 V. This high current originates from the high injection current at the p-i junction

  14. NaI Detector Network at Aragats

    International Nuclear Information System (INIS)

    Avakyan, Karen; Arakelyan, Karen; Chilingarian, Ashot; Daryan, Ara; Kozliner, Lev; Mailyan, Bagrat; Hovsepyan, Gagik; Pokhsraryan, David; Sargsyan, David

    2013-01-01

    The Aragats Space Environmental Center (ASEC) provides monitoring of different species of secondary cosmic rays and consists of two high altitude research stations on Mt. Aragats in Armenia. Along with solar modulation effects, ASEC detectors register several coherent enhancements associated with thunderstorm activity. The experimental techniques used allowed for the first time to simultaneously measure fluxes of the electrons, muons, gamma rays, and neutrons correlated with thunderstorm activity. Ground-based observations by a complex of surface particle detectors, measuring in systematically and repeatable fashion, gamma quanta, electrons, muons and neutrons from atmospheric sources are necessary for proving the theory of particle acceleration and multiplication during thunderstorms. Energy spectra and correlations between fluxes of different particles, measured on Earth's surface address the important issues of research of the solar modulation effects and the atmospheric high-energy phenomena. In May 26 2011, launched 5 NaI(Tl) (thallium-doped sodium iodide) scintillation detectors and 1 plastic one in the new ASEC laboratory on Aragats to detect low energy gamma rays from the thunderclouds and short particle bursts. Including NaI(Tl) detectors in ASEC detectors system is of great importance for investigation thunderstorm phenomena because NaI(Tl) detectors have high efficiency of gamma ray detecting in comparison with plastic ones.

  15. Segmentation of the Outer Contact on P-Type Coaxial Germanium Detectors

    Energy Technology Data Exchange (ETDEWEB)

    Hull, Ethan L.; Pehl, Richard H.; Lathrop, James R.; Martin, Gregory N.; Mashburn, R. B.; Miley, Harry S.; Aalseth, Craig E.; Hossbach, Todd W.

    2006-09-21

    Germanium detector arrays are needed for low-level counting facilities. The practical applications of such user facilities include characterization of low-level radioactive samples. In addition, the same detector arrays can also perform important fundamental physics measurements including the search for rare events like neutrino-less double-beta decay. Coaxial germanium detectors having segmented outer contacts will provide the next level of sensitivity improvement in low background measurements. The segmented outer detector contact allows performance of advanced pulse shape analysis measurements that provide additional background reduction. Currently, n-type (reverse electrode) germanium coaxial detectors are used whenever a segmented coaxial detector is needed because the outer boron (electron barrier) contact is thin and can be segmented. Coaxial detectors fabricated from p-type germanium cost less, have better resolution, and are larger than n-type coaxial detectors. However, it is difficult to reliably segment p-type coaxial detectors because thick (~1 mm) lithium-diffused (hole barrier) contacts are the standard outside contact for p-type coaxial detectors. During this Phase 1 Small Business Innovation Research (SBIR) we have researched the possibility of using amorphous germanium contacts as a thin outer contact of p-type coaxial detectors that can be segmented. We have developed amorphous germanium contacts that provide a very high hole barrier on small planar detectors. These easily segmented amorphous germanium contacts have been demonstrated to withstand several thousand volts/cm electric fields with no measurable leakage current (<1 pA) from charge injection over the hole barrier. We have also demonstrated that the contact can be sputter deposited around and over the curved outside surface of a small p-type coaxial detector. The amorphous contact has shown good rectification properties on the outside of a small p-type coaxial detector. These encouraging

  16. Study of the reaction {sup 22}O(p,p') with MUST detector. Development of the Cs(Tl) part of MUST-2 detector; Etude de la reaction {sup 22}O(p,p') avec le detecteur MUST. Developpement de l'etage CsI(Tl) de l'ensemble MUST 2

    Energy Technology Data Exchange (ETDEWEB)

    Becheva, E

    2004-11-01

    Elastic and inelastic proton scattering on the unstable nuclei {sup 22}O was measured in inverse kinematics at the GANIL facility. A secondary beam of {sup 22}O at 46.6 MeV/A with intensity of {approx} 1000 pps, impinged on a (CH{sub 2}){sub n} target. Recoiling protons were detected in the silicon strip array MUST. We measured the angular distributions of the ground and 2{sub 1}{sup +} states of {sup 22}O. Phenomenological and microscopic analysis of the data were performed. The phenomenological analysis using a global potential parameterization of Becchetti and Greenlees and CH89 yields a value of the deformation parameter {beta}{sub p,p}, = 0.23{+-}0.04 for {sup 22}O, much lower than that of {sup 20}O. The ratio of neutron and proton matrix element M{sub n}/M{sub p} is found equal to 1.46{+-}0.50. The microscopic analysis used of densities and transition densities calculated within HFB and QRPA models respectively. Optical potential were obtained through both folding and JLM procedures. A ratio M{sub n}/M{sub p}=2.5{+-}1.0 is deduced. Contrary of {sup 20}O, {sup 22}O behaviours like a doubly magic nucleus, suggesting a pronounced sub-shell closure at N=14. To develop the study of direct reactions induced by radioactive beams, we have developed and built, a new multi-detector MUST II devoted to light charged particle detection. In this work we established the requirements for the CsI(Tl) detector stage, and test four CsI detector prototypes, constructed by the SCIONIX company. (author)

  17. Processing and first characterization of detectors made with high resistivity n- and p-type Czochralski silicon

    International Nuclear Information System (INIS)

    Bruzzi, M.; Bisello, D.; Borrello, L.; Borchi, E.; Boscardin, M.; Candelori, A.; Creanza, D.; Dalla Betta, G.-F.; DePalma, M.; Dittongo, S.; Focardi, E.; Khomenkov, V.; Litovchenko, A.; Macchiolo, A.; Manna, N.; Menichelli, D.; Messineo, A.; Miglio, S.; Petasecca, M.; Piemonte, C.; Pignatel, G.U.; Radicci, V.; Ronchin, S.; Scaringella, M.; Segneri, G.; Sentenac, D.; Tosi, C.; Zorzi, N.

    2005-01-01

    We report on the design, manufacturing and first characterisation of pad diodes, test structures and microstrip detectors processed with high resistivity magnetic Czochralski (MCz) p- and n-type Si. The pre-irradiation study on newly processed microstrip detectors and test structures show a good overall quality of the processed wafers. After irradiation with 24 GeV/c protons up to 4x10 14 cm -2 the characterisation of n-on-p and p-on-n MCz Si sensors with the C-V method show a decrease of the full depletion voltage and no space charge sign inversion. Microscopic characterisation has been performed to study the role of thermal donors in Czochralski Si. No evidence of thermal donor activation was observed in n-type MCz Si detectors if contact sintering was performed at a temperature lower than 380 deg. C and the final passivation oxide was omitted

  18. Front-side biasing of n-in-p silicon strip detectors

    CERN Document Server

    Baselga Bacardit, Marta; Dierlamm, Alexander Hermann; Dragicevic, Marko Gerhart; Konig, Axel; Pree, Elias; Metzler, Marius

    2018-01-01

    Front-side biasing is an alternative method to bias a silicon sensor. Instead of directly applying high voltage to the back-side, one can exploit the conductive properties of the edge region to bias a detector exclusively via top-side connections. This option can be beneficial for the detector design and might help to facilitate the assembly process of modules. The effective bias voltage is affected by the resistance of the edge region and the sensor current. The measurements of n-in-p sensors performed to qualify this concept have shown that the voltage drop emerging from this resistance is negligible before irradiation. After irradiation, however, the resistivity of the edge region increases with fluence and saturates in the region of 10$^{7}\\,\\Omega$ at a fluence of 1$\\,\\cdot\\,10^{15}\\,$n$_{\\textrm{eq}}$cm$^{-2}$. The measurements are complemented by TCAD simulations and interpretations of the observed effects.

  19. GaAs Schottky versus p/i/n diodes for pixellated X-ray detectors

    CERN Document Server

    Bourgoin, J C

    2002-01-01

    We discuss the performances of GaAs p/i/n structures and Schottky barriers for application as photodetectors for high-energy photons. We compare the magnitude of the leakage current and the width of the depleted region for a given reverse bias. We mention the effect of states present at the metal-semiconductor interface on the extension of the space charge region in Schottky barriers. We illustrate this effect by a description of the capacitance behaviour of a Au-GaAs barrier under gamma irradiation.

  20. Space charge sign inversion and electric field reconstruction in 24 GeV/c proton-irradiated MCZ Si p+-n(TD)-n+ detectors processed via thermal donor introduction

    International Nuclear Information System (INIS)

    Li, Z.; Verbitskaya, E.; Carini, G.; Chen, W.; Eremin, V.; Gul, R.; Haerkoenen, J.; Li, M.

    2009-01-01

    The aim of this study is the evaluation of radiation effects in detectors based on p-type magnetic czochralski (MCZ) Si that was converted to n-type by thermal donor (TD) introduction. As-processed p + -p-n + detectors were annealed at 430 deg. C resulting in p + -n(TD)-n + structures. The space charge sign and the electric field distribution E(x) in MCz Si p + -n(TD)-n + detectors irradiated by 24 GeV/c protons were analyzed using the data on the current pulse response and the Double Peak (DP) electric field distribution model for heavily irradiated detectors. The approach considers an irradiated detector as a structure with three regions in which the electric field depends on the coordinate, and the induced current pulse response arises from the drift process of free carriers in the detector with variable electric field. Reconstruction of the E(x) profile from the pulse response shapes is performed employing a new method for DP electric field reconstruction. This method includes: (a) a direct extraction of charge loss due to trapping and (b) the fitting of a simulated pulse response to the 'corrected' pulse by adjusting the electric field profiles in the three regions. Reconstruction of E(x) distribution showed that in the diodes irradiated by a proton fluence of (2-4)x10 14 p/cm 2 space charge sign inversion has occurred. This is the evidence that the influence of 24 GeV/c proton radiation on MCz Si p + -n(TD)-n + detectors is similar to that on p + -n-n + detectors based on FZ or diffusion oxygenated n-type Si.

  1. Fabrication of radiation detector using PbI{sub 2} crystal

    Energy Technology Data Exchange (ETDEWEB)

    Shoji, T; Sakamoto, K; Ohba, K; Suehiro, T; Hiratate, Y [Tohoku Inst. of Tech., Sendai (Japan)

    1996-07-01

    In this paper, we will discuss the PbI{sub 2} radiation detector fabricated from a crystal grown by the zone melting method and by the vapor phase method, together with characteristics of the crystal obtained by a XPS analyzer. (J.P.N.)

  2. Germanium cryogenic detectors: Alpha surface events rejection capabilities

    International Nuclear Information System (INIS)

    Fiorucci, S.; Broniatowski, A.; Chardin, G.; Censier, B.; Lesquen, A. de; Deschamps, H.; Fesquet, M.; Jin, Y.

    2006-01-01

    Alpha surface events and multiple compton gamma interactions are the two major background components in Ge detectors for double-beta decay investigations. Two different methods have been studied to identify such type of events, using cryogenic Ge detectors developed primarily for dark matter search: (i) combined heat and ionization measurements, and (ii) pulse-shape analysis of the charge collection signals. Both methods show strong separation between electron recoil events and surface alphas. Cryogenic heat-ionization detectors therefore appear able to reject virtually all surface alpha interactions

  3. A surface barrier detector for simultaneous detection of α and β particles

    International Nuclear Information System (INIS)

    Shiraishi, Fumio

    1981-01-01

    Semiconductor detectors are indispensable as the solid detectors with high energy resolution. Ge detectors are used for gamma-ray spectroscopy and its applied fields, while Si detectors are used as the detectors for charged particles such as α and β rays and low energy X-ray. In this paper, it is reported that the Si detector developed in the author's laboratory is suitable to monitor very weak radioactivity. The Si detector is a rectifier, but in order to capture radiation, it has large area and increased thickness, and a window is provided for incident charged particles. The Si detectors are classified into three types according to the manufacturing methods, namely surface barrier type, PN joint type and Li drift type. The Si detector introduced here is of surface barrier type, but it is characterized by the use of P-type Si with superhigh purity. The method of manufacturing this detector, its specifications and characteristics are described. Because of the surface barrier type, it can be produced simply in short time, and the yield of products is good. The stability is good, and the sensitivity is high, accordingly very weak radioactivity can be measured. As the examples of measurements, the results of uranium ore and fertilizer on the market are compared. Also the utilization as surface contamination meters is explained. (Kako, I.)

  4. Characterization of an Mg-implanted GaN p-i-n Diode

    Science.gov (United States)

    2016-03-31

    Characterization of an Mg- implanted GaN p-i-n Diode Travis J. Anderson, Jordan D. Greenlee, Boris N. Feigelson, Karl D. Hobart, and Francis J...Kub Naval Research Laboratory, Washington, DC 20375 Abstract: A p-i-n diode formed by the implantation of Mg in GaN was fabricated and...characterized. After implantation , Mg was activated using the symmetrical multicycle rapid thermal annealing technique with heating pulses up to 1340C

  5. Contamination detector for inner surface of container

    International Nuclear Information System (INIS)

    Watanabe, Tadao.

    1995-01-01

    The present invention concerns a device for detecting contamination of radioactive materials on the inner surface of a vessel upon reutilizing the vessel for containing solidified radioactive wastes and transporting them. Namely, the detecting device has following functions. (1) A radiation detector detects the radioactive materials on the inner surface of the vessel. (2) A plurality of proximity switches measure the distance from the radiation detector to the wall surface of the vessel and are actuated if the distance is decreased to a predetermined value, (3) A vessel inner surface position calculation mechanism calculates the position of the inner surface of the vessel based on the information from a direction indicator and a height indicator. (4) A frontal limit detector detects the limit for allowing the radiation detector to proceed. (5) A vessel inner shape judging mechanism for judging the shape of the inner side of the vessel based on the signals from the proximity switches in a state where the frontal limit detector is operated and a vessel inner surface position signal outputted from the vessel inner surface position calculation mechanism. As a result, the shape of the inner side of the vessel can accurately be recognized, thereby improving accuracy of radiation measurement. (I.S.)

  6. Fabrication and characterization of surface barrier detector from commercial silicon substrate

    International Nuclear Information System (INIS)

    Costa, Fabio Eduardo da; Silva, Julio Batista Rodrigues da

    2015-01-01

    This work used 5 silicon substrates, n-type with resistivity between 500-20,000 Ω.cm, with 12 mm diameter and 1 mm thickness, from Wacker - Chemitronic, Germany. To produce the surface barrier detectors, the substrates were first cleaned, then, they were etched with HNO 3 solution. After this, a deposition of suitable materials on the crystal was made, to produce the desired population inversion of the crystal characteristics. The substrates received a 10 mm diameter gold contact in one of the surfaces and a 5 mm diameter aluminum in the other. The curves I x V and the energy spectra for 28 keV and 59 keV, for each of the produced detectors, were measured. From the 5 substrates, 4 of them resulted in detectors and one did not present even diode characteristics. The results showed that the procedures used are suitable to produce detectors with this type of silicon substrates. (author)

  7. Characterization and Performance of Silicon n-in-p Pixel Detectors for the ATLAS Upgrades

    CERN Document Server

    Weigell, Philipp; Gallrapp, Christian; La Rosa, Alessandro; Macchiolo, Anna; Nisius, Richard; Pernegger, Heinz; Richter, Rainer

    2011-01-01

    The existing ATLAS Tracker will be at its functional limit for particle fluences of 10^15 neq/cm^2 (LHC). Thus for the upgrades at smaller radii like in the case of the planned Insertable B-Layer (IBL) and for increased LHC luminosities (super LHC) the development of new structures and materials which can cope with the resulting particle fluences is needed. N-in-p silicon devices are a promising candidate for tracking detectors to achieve these goals, since they are radiation hard, cost efficient and are not type inverted after irradiation. A n-in-p pixel production based on a MPP/HLL design and performed by CiS (Erfurt, Germany) on 300 \\mu m thick Float-Zone material is characterised and the electrical properties of sensors and single chip modules (SCM) are presented, including noise, charge collection efficiencies, and measurements with MIPs as well as an 241Am source. The SCMs are built with sensors connected to the current the ATLAS read-out chip FE-I3. The characterisation has been performed with the ATL...

  8. Surface passivation of high-purity germanium gamma-ray detector

    International Nuclear Information System (INIS)

    Alexiev, D.; Butcher, K.S.A.; Edmondson, M.; Lawson, E.M.

    1993-01-01

    The experimental work consists of two parts. The first involves fabrication of hyper-pure germanium gamma ray detectors using standard surface treatment, chemical etchings and containment in a suitable cryostat. Then, after cooling the detectors to 77 K, γ-ray emissions from radioisotopes are resolved, resolution, depletion depth, V R versus I R characteristics and /N A -N D / of the germanium are measured. The second part of the work involves investigation of surface states in an effort to achieve long-term stability of operating characteristics. Several methods are used: plasma hydrogenation, a-Si and a-Ge pinch-off effect and simple oxidation. A-Ge and a-Si thicknesses were measured using Rutherford backscattering techniques; surface states were measured with deep level transient spectroscopy and diode reverse current versus reverse voltage plots. Some scanning electron microscope measurements were used in determining major film contaminants during backscattering of a-Si and a-Ge films. Surface passivation studies revealed unexpected hole trapping defects generated when a-Ge:H film is applied. The a-Si:H films were found to be mechanically strong, no defect traps were found and preliminary results suggest that such films will be good passivants. 14 refs., 2 tabs., 7 figs., 13 ills

  9. Recent Technological Developments on LGAD and iLGAD Detectors for Tracking and Timing Applications

    OpenAIRE

    Pellegrini, G.; Baselga, M.; Carulla, M.; Fadeyev, V.; Fernández-Martínez, P.; Fernandez-Garcia, M.; Flores, D.; Galloway, Z.; Gallrapp, C.; Hidalgo, S.; Liang, Z.; Merlos, A.; Moll, M.; Quirion, D.; Sadrozinski, H.

    2015-01-01

    This paper reports the last technological development on the Low Gain Avalanche Detector (LGAD) and introduces a new architecture of these detectors called inverse-LGAD (iLGAD). Both approaches are based on the standard Avalanche Photo Diodes (APD) concept, commonly used in optical and X-ray detection applications, including an internal multiplication of the charge generated by radiation. The multiplication is inherent to the basic n++-p+-p structure, where the doping profile of the p+ layer ...

  10. Nuclear radiation detector based on ion implanted p-n junction in 4H-SiC

    International Nuclear Information System (INIS)

    Vervisch, V.; Issa, F.; Ottaviani, L.; Lazar, M.; Kuznetsov, A.; Szalkai, D.; Klix, A.; Lyoussi, A.; Vermeeren, L.; Hallen, A.

    2013-06-01

    In this paper, we propose a new device detector based on ion implanted p-n junction in 4H-SiC for nuclear instrumentation. We showed the interest to use 10 Boron as a Neutron Converter Layer in order to detect thermal neutrons. We present the main results obtained during irradiation tests performed in the Belgian Reactor 1. We show the capability of our detector by means of first results of the detector response at different reverse voltage biases and at different reactor power (authors)

  11. Studies of frequency dependent C-V characteristics of neutron irradiated p+-n silicon detectors

    International Nuclear Information System (INIS)

    Li, Zheng; Kraner, H.W.

    1990-10-01

    Frequency-dependent capacitance-voltage fluence (C-V) characteristics of neutron irradiated high resistivity silicon p + -n detectors have been observed up to a fluence of 8.0 x 10 12 n/cm 2 . It has been found that frequency dependence of the deviation of the C-V characteristic (from its normal V -1/2 dependence), is strongly dependent on the ratio of the defect density and the effective doping density N t /N' d . As the defect density approaches the effective dopant density, or N t /N' d → 1, the junction capacitance eventually assumes the value of the detector geometry capacitance at high frequencies (f ≤ 10 5 Hz), independent of voltage. A two-trap-level model using the concept of quasi-fermi levels has been developed, which predicts both the effects of C-V frequency dependence and dopant compensation observed in this study

  12. N-isopropyl-p-[I[sup 123

    Energy Technology Data Exchange (ETDEWEB)

    Tada, Hiroshi; Morooka, Keiichi; Arimoto, Kiyoshi; Matsuo, Takiko; Takagi, Kazue; Yanagawa, Etsuko (Toho Univ., Tokyo (Japan). School of Medicine)

    1992-09-01

    We studied the clinical usefulness of I[sup 123]-IMP SPECT in 50 pediatric patients with CNS disorders, which were categorized into the convulsive disorder group (n=20), the cerebrovascular disorder group (n=10), the acute encephalopathy or CNS infection group (n=10), the metabolic or degenerative disorder group (n=6), the congenital abnormality group (n=2) and the migraine group (n=2). The findings obtained were compared with those of cranial CT. I[sup 123]-IMP SPECT revealed abnormal findings in 45 out of the 50 patients (90%), although cranial CT showed abnormal findings in only 24 patients (48%). This difference was statistically significant (p<0.01). In all groups except the migraine, we could find abnormal findings in more than 90% of the patients. Out of 28 patients without focal findings on the initial CT scanning. I[sup 123]-IMP SPECT showed focal abnormalities in 26 patients (93%). Moreover in many patients with focal neurological abnormalities, we found focal abnormalities of I[sup 123]-IMP SPECT related with neurological abnormalities of the patients. From these findings, we think I[sup 123]-IMP SPECT might be superior to CT scanning in examining a localized lesion. It was found that in many patients with focal abnormalities in CT scanning, I[sup 123]-IMP SPECT showed larger abnormalities in CT scanning. By using I[sup 123]-IMP SPECT we might be able to study the blood perfusional state surrounding the abnormal area shown by CT. In 3 patients with acute cerebrovascular disorders, I[sup 123]-IMP SPECT revealed abnormal findings 3 to 11 days earlier than cranial CT. I[sup 123]-IMP SPECT might be useful for early recognition of the pathological state. From these experiences, we concluded that I[sup 123]-IMP SPECT was useful for studying the pathophysiology of CNS disorders in children. (author).

  13. P-type surface effects for thickness variation of 2um and 4um of n-type layer in GaN LED

    Science.gov (United States)

    Halim, N. S. A. Abdul; Wahid, M. H. A.; Hambali, N. A. M. Ahmad; Rashid, S.; Ramli, M. M.; Shahimin, M. M.

    2017-09-01

    The internal quantum efficiency of III-Nitrides group, GaN light-emitting diode (LED) has been considerably limited due to the insufficient hole injection and this is caused by the lack of performance p-type doping and low hole mobility. The low hole mobility makes the hole less energetic, thus reduced the performance operation of GaN LED itself. The internal quantum efficiency of GaN-based LED with surface roughness (texture) can be changed by texture size, density, and thickness of GaN film or by the combined effects of surface shape and thickness of GaN film. Besides, due to lack of p-type GaN, attempts to look forward the potential of GaN LED relied on the thickness of n-type layer and surface shape of p-type GaN layer. This work investigates the characteristics of GaN LED with undoped n-GaN layer of different thickness and the surface shape of p-type layer. The LEDs performance is significantly altered by modifying the thickness and shape. Enhancement of n-GaN layer has led to the annihilation of electrical conductivity of the chip. Different surface geometry governs the emission rate extensively. Internal quantum efficiency is also predominantly affected by the geometry of n-GaN layer which subjected to the current spreading. It is recorded that the IQE droop can be minimized by varying the thickness of the active layer without amplifying the forward voltage. Optimum forward voltage (I-V), total emission rate relationship with the injected current and internal quantum efficiency (IQE) for 2,4 µm on four different surfaces of p-type layer are also reported in this paper.

  14. X- and gamma-ray N+PP+ silicon detectors with high radiation resistance

    International Nuclear Information System (INIS)

    Petris, M.; Ruscu, R.; Moraru, R.; Cimpoca, V.

    1998-01-01

    We have investigated the use of p-type silicon detectors as starting material for X-and gamma-ray detectors because of several potential benefits it would bring: 1. high purity p-type silicon grown by the float-zone process exhibits better radial dopant uniformity than n-type float-zone silicon; 2. it is free of radiation damage due to the neutron transmutation doping process and behaves better in a radiation field because mainly acceptor like centers are created through the exposure and the bulk material type inversion does not occur as in the n-type silicon. But the p-type silicon, in combination with a passivating layer of silicon dioxide, leads to a more complex detector layout since the positive charge in the oxide causes an inversion in the surface layer under the silicon dioxide. Consequently, it would be expected that N + P diodes have a higher leakage current than P + N ones. All these facts have been demonstrated experimentally. These features set stringent requirements for the technology of p-type silicon detectors. Our work presents two new geometries and an improved technology for p-type high resistivity material to obtain low noise radiation detectors. Test structures were characterized before and after the gamma exposure with a cumulative dose in the range 10 4 - 5 x 10 6 rad ( 60 Co). Results indicate that proposed structures and their technology enable the development of reliable N + PP + silicon detectors. For some samples (0.8 - 12 mm 2 ), extremely low reverse currents were obtained and, in combination with a low noise charge preamplifier, the splitting of 241 Am X-ray lines was possible and also the Mn Kα line (5.9 keV) was extracted from the noise with a 1.9 keV FWHM at the room temperature. An experimental model of a nuclear probe based on these diodes was designed for X-ray detection applications. (authors)

  15. Photoinduced entropy of InGaN/GaN p-i-n double-heterostructure nanowires

    KAUST Repository

    Alfaraj, Nasir; Mitra, Somak; Wu, Feng; Ajia, Idris A.; Janjua, Bilal; Prabaswara, Aditya; Aljefri, Renad A.; Sun, Haiding; Ng, Tien Khee; Ooi, Boon S.; Roqan, Iman S.; Li, Xiaohang

    2017-01-01

    The photoinduced entropy of InGaN/GaN p-i-n nanowires was investigated using temperature-dependent (6–290 K) photoluminescence. We also analyzed the photocarrier dynamics in the InGaN active regions using time-resolved photoluminescence. An increasing trend in the amount of generated photoinduced entropy of the system above 250 K was observed, while we observed an oscillatory trend in the generated entropy of the system below 250 K that stabilizes between 200 and 250 K. Strong exciton localization in indium-rich clusters, carrier trapping by surface defect states, and thermodynamic entropy effects were examined and related to the photocarrier dynamics. We conjecture that the amount of generated photoinduced entropy of the system increases as more non-radiative channels become activated and more shallowly localized carriers settle into deeply localized states; thereby, additional degrees of uncertainty related to the energy of states involved in thermionic transitions are attained.

  16. Photoinduced entropy of InGaN/GaN p-i-n double-heterostructure nanowires

    KAUST Repository

    Alfaraj, Nasir

    2017-04-17

    The photoinduced entropy of InGaN/GaN p-i-n nanowires was investigated using temperature-dependent (6–290 K) photoluminescence. We also analyzed the photocarrier dynamics in the InGaN active regions using time-resolved photoluminescence. An increasing trend in the amount of generated photoinduced entropy of the system above 250 K was observed, while we observed an oscillatory trend in the generated entropy of the system below 250 K that stabilizes between 200 and 250 K. Strong exciton localization in indium-rich clusters, carrier trapping by surface defect states, and thermodynamic entropy effects were examined and related to the photocarrier dynamics. We conjecture that the amount of generated photoinduced entropy of the system increases as more non-radiative channels become activated and more shallowly localized carriers settle into deeply localized states; thereby, additional degrees of uncertainty related to the energy of states involved in thermionic transitions are attained.

  17. Pulse shapes and surface effects in segmented germanium detectors

    Energy Technology Data Exchange (ETDEWEB)

    Lenz, Daniel

    2010-03-24

    It is well established that at least two neutrinos are massive. The absolute neutrino mass scale and the neutrino hierarchy are still unknown. In addition, it is not known whether the neutrino is a Dirac or a Majorana particle. The GERmanium Detector Array (GERDA) will be used to search for neutrinoless double beta decay of {sup 76}Ge. The discovery of this decay could help to answer the open questions. In the GERDA experiment, germanium detectors enriched in the isotope {sup 76}Ge are used as source and detector at the same time. The experiment is planned in two phases. In the first, phase existing detectors are deployed. In the second phase, additional detectors will be added. These detectors can be segmented. A low background index around the Q value of the decay is important to maximize the sensitivity of the experiment. This can be achieved through anti-coincidences between segments and through pulse shape analysis. The background index due to radioactive decays in the detector strings and the detectors themselves was estimated, using Monte Carlo simulations for a nominal GERDA Phase II array with 18-fold segmented germanium detectors. A pulse shape simulation package was developed for segmented high-purity germanium detectors. The pulse shape simulation was validated with data taken with an 19-fold segmented high-purity germanium detector. The main part of the detector is 18-fold segmented, 6-fold in the azimuthal angle and 3-fold in the height. A 19th segment of 5mm thickness was created on the top surface of the detector. The detector was characterized and events with energy deposited in the top segment were studied in detail. It was found that the metalization close to the end of the detector is very important with respect to the length of the of the pulses observed. In addition indications for n-type and p-type surface channels were found. (orig.)

  18. Pulse shapes and surface effects in segmented germanium detectors

    International Nuclear Information System (INIS)

    Lenz, Daniel

    2010-01-01

    It is well established that at least two neutrinos are massive. The absolute neutrino mass scale and the neutrino hierarchy are still unknown. In addition, it is not known whether the neutrino is a Dirac or a Majorana particle. The GERmanium Detector Array (GERDA) will be used to search for neutrinoless double beta decay of 76 Ge. The discovery of this decay could help to answer the open questions. In the GERDA experiment, germanium detectors enriched in the isotope 76 Ge are used as source and detector at the same time. The experiment is planned in two phases. In the first, phase existing detectors are deployed. In the second phase, additional detectors will be added. These detectors can be segmented. A low background index around the Q value of the decay is important to maximize the sensitivity of the experiment. This can be achieved through anti-coincidences between segments and through pulse shape analysis. The background index due to radioactive decays in the detector strings and the detectors themselves was estimated, using Monte Carlo simulations for a nominal GERDA Phase II array with 18-fold segmented germanium detectors. A pulse shape simulation package was developed for segmented high-purity germanium detectors. The pulse shape simulation was validated with data taken with an 19-fold segmented high-purity germanium detector. The main part of the detector is 18-fold segmented, 6-fold in the azimuthal angle and 3-fold in the height. A 19th segment of 5mm thickness was created on the top surface of the detector. The detector was characterized and events with energy deposited in the top segment were studied in detail. It was found that the metalization close to the end of the detector is very important with respect to the length of the of the pulses observed. In addition indications for n-type and p-type surface channels were found. (orig.)

  19. Influence of production technology and design on characteristics neutron-sensitive P-I-N diodes

    International Nuclear Information System (INIS)

    Perevertaylo, V.L.; Kovrygin, V.I.

    2012-01-01

    This paper presents the results of tests on neutron-sensitive p-i-n diode with local p-n junction, which allows to measure not only the integral dose by nonionizing energy loss (NIEL), but also the real-time dose and dose rate because of ionizing energy losses (IEL). The influence of design and process parameters and the lifetime of minority carriers on the radiation characteristics of the device considered. Sensitivity at low doses (from one to ten rad) is limited due to a decrease in the lifetime because of influence of lateral sides of cut. The sensitivity and accuracy of dose can be increased by moving of p-n junction away from the cut surface. The dependence of the voltage drop across the diode on the neutron dose irradiation up to 5 krad received, and the sensitivity was 2 - 3 mV/rad. We have demonstrated that replacement of the bulk p-i-n diode with total p-n junction by new diodes with local p-n junction allow for increase sensitivity, accuracy of dose and application in NIEL and IEL measurements simultaneously. Explanation for the extinction of a direct current through the diode with increasing doses of neutron irradiation proposed

  20. High efficiency GaN-based LEDs using plasma selective treatment of p-GaN surface

    Energy Technology Data Exchange (ETDEWEB)

    Lee, Young-Bae; Naoi, Yoshiki; Sakai, Shiro [Department of Electrical and Electronic Engineering, University of Tokushima, 2-1 Minami-josanjima, Tokushima 770-8506 (Japan); Takaki, Ryohei; Sato, Hisao [Nitride Semiconductor Co., Ltd., 115-7 Itayajima, Akinokami, Seto-cho, Naruto, Tokushima 771-0360 (Japan)

    2003-11-01

    We have studied a new method of increasing the extraction efficiency of a GaN-based light-emitting diode (LED) using a plasma surface treatment. In this method, prior to the evaporation of a semitransparent p-metal, the surface of a p-GaN located beneath a p-pad is selectively exposed to a nitrogen plasma in a reactive ion etching (RIE) chamber. The electrical characteristics of the plasma treated p-GaN remarkably changes its resistivity into semi-insulator without any parasitic damage. Since the LEDs with a new method have no light absorption in a p-pad region, a higher optical power can be extracted compared to a conventional LEDs without plasma selective treatment on the p-GaN surface. (copyright 2003 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  1. Optoelectric Properties of GaInP p-i-n Solar Cells with Different i-Layer Thicknesses

    Directory of Open Access Journals (Sweden)

    Tsung-Shine Ko

    2015-01-01

    Full Text Available The optoelectric properties of GaInP p-i-n solar cells with different intrinsic layer (i-layer thicknesses from 0.25 to 1 μm were studied. Both emission intensity and full width at half maximum features of the photoluminescence spectrum indicate that the optimum i-layer thickness would be between 0.5 and 0.75 μm. The integrated current results of photocurrent experiment also point out that the samples with 0.5 to 0.75 μm i-layer thicknesses have optimum value around 156 nA. Electroreflectance measurements reveal that the built-in electric field strength of the sample gradually deviates from the theoretical value larger when i-layer thickness of the sample is thicker than 0.75 μm. I-V measurements also confirm crystal quality for whole samples by obtaining the information about short currents of photovoltaic performances. A series of experiments reflect that thicker i-layer structure would induce more defects generation lowering crystal quality.

  2. Surface sensitization mechanism on negative electron affinity p-GaN nanowires

    Science.gov (United States)

    Diao, Yu; Liu, Lei; Xia, Sihao; Feng, Shu; Lu, Feifei

    2018-03-01

    The surface sensitization is the key to prepare negative electron affinity photocathode. The thesis emphasizes on the study of surface sensitization mechanism of p-type doping GaN nanowires utilizing first principles based on density function theory. The adsorption energy, work function, dipole moment, geometry structure, electronic structure and optical properties of Mg-doped GaN nanowires surfaces with various coverages of Cs atoms are investigated. The GaN nanowire with Mg doped in core position is taken as the sensitization base. At the initial stage of sensitization, the best adsorption site for Cs atom on GaN nanowire surface is BN, the bridge site of two adjacent N atoms. Surface sensitization generates a p-type internal surface with an n-type surface state, introducing a band bending region which can help reduce surface barrier and work function. With increasing Cs coverage, work functions decrease monotonously and the "Cs-kill" phenomenon disappears. For Cs coverage of 0.75 ML and 1 ML, the corresponding sensitization systems reach negative electron affinity state. Through surface sensitization, the absorption curves are red shifted and the absorption coefficient is cut down. All theoretical calculations can guide the design of negative electron affinity Mg doped GaN nanowires photocathode.

  3. Characterisation of GERDA Phase-I detectors in liquid argon

    Energy Technology Data Exchange (ETDEWEB)

    Barnabe Heider, Marik; Schoenert, Stefan [Max-Planck-Institut fuer Kernphysik (Germany); Gusev, Konstantin [Russian Research Center, Kurchatov Institute (Russian Federation); Joint Institute for Nuclear Research (Russian Federation)

    2009-07-01

    GERDA will search for neutrinoless double beta decay in {sup 76}Ge by submerging bare enriched HPGe detectors in liquid argon. In GERDA Phase-I, reprocessed enriched-Ge detectors, which were previously operated by the Heidelberg-Moscow and IGEX collaborations, and reprocessed natural-Ge detectors from Genius-TF, will be redeployed. We have tested the operation and performance of bare HPGe detectors in liquid nitrogen and in liquid argon over more than three years with three non-enriched p-type prototype detectors. The detector handling and mounting procedures have been defined and the Phase-I detector technology, the low-mass assembly and the long-term stability in liquid argon have been tested successfully. The Phase-I detectors were reprocessed by Canberra Semiconductor NV, Olen, according to their standard technology but without the evaporation of a passivation layer. After their reprocessing, the detectors have been mounted in their low-mass holders and their characterisation in liquid argon performed. The leakage current, the counting characteristics and the efficiency of the detectors have been measured. The testing of the detectors was carried out in the liquid argon test stand of the GERDA underground Detector Laboratory (GDL) at LNGS. The detectors are now stored underground under vacuum until their operation in GERDA.

  4. Vibrational Fingerprints of Low-Lying Pt(n)P(2n) (n = 1-5) Cluster Structures from Global Optimization Based on Density Functional Theory Potential Energy Surfaces.

    Science.gov (United States)

    Jedidi, Abdesslem; Li, Rui; Fornasiero, Paolo; Cavallo, Luigi; Carbonniere, Philippe

    2015-12-03

    Vibrational fingerprints of small Pt(n)P(2n) (n = 1-5) clusters were computed from their low-lying structures located from a global exploration of their DFT potential energy surfaces with the GSAM code. Five DFT methods were assessed from the CCSD(T) wavenumbers of PtP2 species and CCSD relative energies of Pt2P4 structures. The eight first Pt(n)P(2n) isomers found are reported. The vibrational computations reveal (i) the absence of clear signatures made by overtone or combination bands due to very weak mechanical and electrical anharmonicities and (ii) some significant and recurrent vibrational fingerprints in correlation with the different PP bonding situations in the Pt(n)P(2n) structures.

  5. Portable gamma- and X-ray analyzers based on CdTe p-i-n detectors

    CERN Document Server

    Khusainov, A K; Bahlanov, S V; Derbin, A V; Ivanov, V V; Lysenko, V V; Morozov, F; Mouratov, V G; Muratova, V N; Petukhov, Y A; Pirogov, A M; Polytsia, O P; Saveliev, V D; Solovei, V A; Yegorov, K A; Zhucov, M P

    1999-01-01

    Several portable instruments are designed using previously reported CdTe detector technology. These can be divided into three groups according to their energy ranges: (1) 3-30 keV XRF analyzers, (2) 5-120 keV wide range XRF analyzers and (3) gamma-ray spectrometers for operation up to 1500 keV. These instruments are used to inspect several hundreds of samples in situ during a working day in applications such as a metal alloy verification at customs control. Heavy metals are identified through a 3-100 mm thick package with these instruments. Surface contamination by heavy metals (for example toxins such as Hg, Th and Pb in housing environmental control), the determination of Pb concentration in gasoline, geophysical control in mining, or nuclear material control are other applications. The weight of these XRF probes is about 1 kg and two electronic designs are used: one with embedded computer and another based on a standard portable PC. The instruments have good precision and high productivity for measurements...

  6. Characterization of HPGe detectors using Computed Tomography

    Energy Technology Data Exchange (ETDEWEB)

    Hedman, A., E-mail: Angelica.Hedman@foi.se [Swedish Defence Research Agency, Division of CBRN Defence and Security, SE-90182 Umeå (Sweden); Umeå University, Department of Radiation Sciences, Radiation Physics, SE-90187 Umeå (Sweden); Bahar Gogani, J.; Granström, M. [Swedish Defence Research Agency, Division of CBRN Defence and Security, SE-90182 Umeå (Sweden); Johansson, L.; Andersson, J.S. [Umeå University, Department of Radiation Sciences, Radiation Physics, SE-90187 Umeå (Sweden); Ramebäck, H. [Swedish Defence Research Agency, Division of CBRN Defence and Security, SE-90182 Umeå (Sweden); Chalmers University of Technology, Department of Chemical and Biological Engineering, Nuclear Chemistry, SE-41296 Göteborg (Sweden)

    2015-06-11

    Computed Tomography (CT) high-resolution imaging have been used to investigate if there is a significant change in the crystal-to-window distance, i.e. the air gap thickness, in a small n-type detector cooled to 77 K, and in a medium sized p-type HPGe detector when cooled to 100 K. The findings were compared to detector dimension data made available by the manufacturer. The air gap thickness increased by (0.38±0.07) mm for the n-type detector and by (0.40±0.15) mm for the p-type detector when the detectors were cooled to 77 resp. 100 K compared to at room temperature. Monte Carlo calculations indicate that these differences have a significant impact on the efficiency in close geometries (<5 cm). In the energy range of 40–700 keV with a source placed directly on endcap, the change in detector efficiency with temperature is 1.9–2.9% for the n-type detector and 0.3–2.1% for the p-type detector. The measured air gap thickness when cooling the detector was 1.1 mm thicker than manufacturer data for the n-type detector and 0.2 mm thicker for the p-type detector. In the energy range of 40–700 keV and with a source on endcap, this result in a change in detector efficiency of 5.2–7.1% for the n-type detector and 0.2–1.0% for the p-type detector, i.e. the detector efficiency is overestimated using data available by the manufacturer.

  7. Recent technological developments on LGAD and iLGAD detectors for tracking and timing applications

    Science.gov (United States)

    Pellegrini, G.; Baselga, M.; Carulla, M.; Fadeyev, V.; Fernández-Martínez, P.; García, M. Fernández; Flores, D.; Galloway, Z.; Gallrapp, C.; Hidalgo, S.; Liang, Z.; Merlos, A.; Moll, M.; Quirion, D.; Sadrozinski, H.; Stricker, M.; Vila, I.

    2016-09-01

    This paper reports the latest technological development on the Low Gain Avalanche Detector (LGAD) and introduces a new architecture of these detectors called inverse-LGAD (iLGAD). Both approaches are based on the standard Avalanche Photo Diodes (APD) concept, commonly used in optical and X-ray detection applications, including an internal multiplication of the charge generated by radiation. The multiplication is inherent to the basic n++-p+-p structure, where the doping profile of the p+ layer is optimized to achieve high field and high impact ionization at the junction. The LGAD structures are optimized for applications such as tracking or timing detectors for high energy physics experiments or medical applications where time resolution lower than 30 ps is required. Detailed TCAD device simulations together with the electrical and charge collection measurements are presented through this work.

  8. Recent technological developments on LGAD and iLGAD detectors for tracking and timing applications

    International Nuclear Information System (INIS)

    Pellegrini, G.; Baselga, M.; Carulla, M.; Fadeyev, V.; Fernández-Martínez, P.; García, M. Fernández; Flores, D.; Galloway, Z.; Gallrapp, C.; Hidalgo, S.; Liang, Z.; Merlos, A.; Moll, M.; Quirion, D.; Sadrozinski, H.; Stricker, M.; Vila, I.

    2016-01-01

    This paper reports the latest technological development on the Low Gain Avalanche Detector (LGAD) and introduces a new architecture of these detectors called inverse-LGAD (iLGAD). Both approaches are based on the standard Avalanche Photo Diodes (APD) concept, commonly used in optical and X-ray detection applications, including an internal multiplication of the charge generated by radiation. The multiplication is inherent to the basic n"+"+–p"+–p structure, where the doping profile of the p"+ layer is optimized to achieve high field and high impact ionization at the junction. The LGAD structures are optimized for applications such as tracking or timing detectors for high energy physics experiments or medical applications where time resolution lower than 30 ps is required. Detailed TCAD device simulations together with the electrical and charge collection measurements are presented through this work.

  9. Recent technological developments on LGAD and iLGAD detectors for tracking and timing applications

    Energy Technology Data Exchange (ETDEWEB)

    Pellegrini, G.; Baselga, M.; Carulla, M. [Centro Nacional de Microelectrónica, IMB-CNM-CSIC, Barcelona (Spain); Fadeyev, V. [Santa Cruz Institute of Particle Physics SCIPP, Santa Cruz, CA (United States); Fernández-Martínez, P. [Centro Nacional de Microelectrónica, IMB-CNM-CSIC, Barcelona (Spain); García, M. Fernández [Instituto de Física de Cantabria IFCA-CSIC-UC, Santander (Spain); Flores, D. [Centro Nacional de Microelectrónica, IMB-CNM-CSIC, Barcelona (Spain); Galloway, Z. [Santa Cruz Institute of Particle Physics SCIPP, Santa Cruz, CA (United States); Gallrapp, C. [CERN, Geneva (Switzerland); Hidalgo, S. [Centro Nacional de Microelectrónica, IMB-CNM-CSIC, Barcelona (Spain); Liang, Z. [Santa Cruz Institute of Particle Physics SCIPP, Santa Cruz, CA (United States); Merlos, A. [Centro Nacional de Microelectrónica, IMB-CNM-CSIC, Barcelona (Spain); Moll, M. [CERN, Geneva (Switzerland); Quirion, D. [Centro Nacional de Microelectrónica, IMB-CNM-CSIC, Barcelona (Spain); Sadrozinski, H. [Santa Cruz Institute of Particle Physics SCIPP, Santa Cruz, CA (United States); Stricker, M. [CERN, Geneva (Switzerland); Vila, I. [Instituto de Física de Cantabria IFCA-CSIC-UC, Santander (Spain)

    2016-09-21

    This paper reports the latest technological development on the Low Gain Avalanche Detector (LGAD) and introduces a new architecture of these detectors called inverse-LGAD (iLGAD). Both approaches are based on the standard Avalanche Photo Diodes (APD) concept, commonly used in optical and X-ray detection applications, including an internal multiplication of the charge generated by radiation. The multiplication is inherent to the basic n{sup ++}–p{sup +}–p structure, where the doping profile of the p{sup +} layer is optimized to achieve high field and high impact ionization at the junction. The LGAD structures are optimized for applications such as tracking or timing detectors for high energy physics experiments or medical applications where time resolution lower than 30 ps is required. Detailed TCAD device simulations together with the electrical and charge collection measurements are presented through this work.

  10. Method of producing p-i-n structures by compensation of lithium ions from both side of silicon

    International Nuclear Information System (INIS)

    Muminov, R.A.; Radjapov, S.A.; Saymbetov, A.K.; Tursunkulov, O.M.; Pindurin, Yu.S.

    2007-01-01

    Full text: Semiconductor nuclear radiation detectors are needed to solve certain problems in nuclear spectroscopy. The development of efficiency detectors became possible with advances in growing high purify silicon single crystals with the required properties, satisfying the requirements for obtaining detectors based on them. One important requirement for obtaining detectors with sensitive area is that its resistance must be high. This is achieved by using the lithium ion drift process in the volume of the semiconductor detector. Thus it has been developed and created silicon semiconductor nuclear radiation detectors with vide range of diameter of sensitive area up to 100 mm and thickness (from 1mm to 10mm). At present work a new method for producing p-i-n structures was developed to decrease substantially the time required for compensation of silicon by lithium ions and to eliminate at the same time the negative consequences of holding the crystal at a high temperature and under a high voltage. Drift of lithium ions from two ends of prepared samples is conducted to a depth sufficient for the required compensation of the initial acceptor impurity in silicon. The method described above was used to fabricate a batch of Si(Li) detectors with a 1-10 mm thick and 10-110 mm in diameter sensitive region. The thickness of the sensitive region was determined by performing standard measurements and chemical pigmentation. Advantages of detectors are they have improved properties and less time for compensation of lithium ions. (authors)

  11. Technology development of p-type microstrip detectors with radiation hard p-spray isolation

    International Nuclear Information System (INIS)

    Pellegrini, G.; Fleta, C.; Campabadal, F.; Diez, S.; Lozano, M.; Rafi, J.M.; Ullan, M.

    2006-01-01

    A technology for the fabrication of p-type microstrip silicon radiation detectors using p-spray implant isolation has been developed at CNM-IMB. The p-spray isolation has been optimized in order to withstand a gamma irradiation dose up to 50 Mrad (Si), which represents the ionization radiation dose expected in the middle region of the SCT-Atlas detector of the future Super-LHC during 10 years of operation. The best technological options for the p-spray implant were found by using a simulation software package and dedicated calibration runs. Using the optimized technology, detectors have been fabricated in the Clean Room facility of CNM-IMB, and characterized by reverse current and capacitance measurements before and after irradiation. The average full depletion voltage measured on the non-irradiated detectors was V FD =41±3 V, while the leakage current density for the microstrip devices at V FD +20 V was 400 nA/cm 2

  12. Minimizing guard ring dead space in silicon detectors with an n-type guard ring at the edge of the detector

    International Nuclear Information System (INIS)

    Palviainen, Tanja; Tuuva, Tuure; Leinonen, Kari

    2007-01-01

    Detectors with n-type silicon with an n + -type guard ring were investigated. In the present work, a new p + /n/n + detector structure with an n + guard ring is described. The guard ring is placed at the edge of the detector. The detector depletion region extends also sideways, allowing for signal collection very close to the n-guard ring. In this kind of detector structure, the dead space of the detector is minimized to be only below the guard ring. This is proved by simulations done using Silvaco/ATLAS software

  13. Minimizing guard ring dead space in silicon detectors with an n-type guard ring at the edge of the detector

    Energy Technology Data Exchange (ETDEWEB)

    Palviainen, Tanja [Lappeenranta University of Technology, P.O. Box 20, FIN-53851 Lappeenranta (Finland)]. E-mail: tanja.palviainen@lut.fi; Tuuva, Tuure [Lappeenranta University of Technology, P.O. Box 20, FIN-53851 Lappeenranta (Finland); Leinonen, Kari [Lappeenranta University of Technology, P.O. Box 20, FIN-53851 Lappeenranta (Finland)

    2007-04-01

    Detectors with n-type silicon with an n{sup +}-type guard ring were investigated. In the present work, a new p{sup +}/n/n{sup +} detector structure with an n{sup +} guard ring is described. The guard ring is placed at the edge of the detector. The detector depletion region extends also sideways, allowing for signal collection very close to the n-guard ring. In this kind of detector structure, the dead space of the detector is minimized to be only below the guard ring. This is proved by simulations done using Silvaco/ATLAS software.

  14. Segmented detector for recoil neutrons in the p(γ, n)π+ reaction

    International Nuclear Information System (INIS)

    Korkmaz, E.; O'Rielly, G.V.; Hutcheon, D.A.; Feldman, G.; Jordan, D.; Kolb, N.R.; Pywell, R.E.; Retzlaff, G.A.; Sawatzky, B.D.; Skopik, D.M.; Vogt, J.M.; Cairns, E.; Giesen, U.; Holm, L.; Opper, A.K.; Rozon, F.M.; Soukup, J.

    1999-01-01

    A segmented neutron detector has been constructed and used for recoil neutron (6-13 MeV) measurements of the reaction γp→nπ + very close to threshold. BC-505 liquid scintillator was used to allow pulse shape discrimination between neutrons and photons. A measurement of the absolute efficiency of the detector was performed using stopped pions in the reaction π - p→nγ. Results of the efficiency calibration are compared to a Monte Carlo simulation. (author)

  15. Properties of silicium n-i-p junctions - application to the detection of relativist particles; Propriete des jonctions nip de silicium - Application a la detection des particules relativistes; Svojstva perekhoda p-i-n v kremnii - primenenie k obnaruzheniyu relyativistskikh chastits; Propiedades de estructuras nip de silicio - Aplicacion a la deteccion de particulas relativistas

    Energy Technology Data Exchange (ETDEWEB)

    Koch, L; Messier, J; Valin, J [Centre d' Etudes Nucleaires de Saclay (France)

    1962-04-15

    An account is given of experience gained at the CENS on the detection of nuclear particles by semiconductors. One type of detector, of pin structure, has been specially studied. In comparison with the usual p-n or npp{sup +} structures, and given an equal purity of the base material, it has the advantage of permitting a larger effective volume for the following reasons: (a) with an equal potential difference applied to the crystal, the total thickness of the barrier layers is greater; (b) with an equal reverse current, the maximum potential difference which they can withstand is greater; (c) other things being equal, their capacitance per unit of area is smaller and hence the permitted maximum surface is greater. A detailed description is given of methods of obtaining pin structures in silicon, the intermediate zone reaching 1 mm. Lastly, certain applications of these detectors are described: {alpha} and {gamma} spectroscopy and the measurement of dE/dX for relativistic particles. (author) [French] Les auteurs exposent l'experience acquise au CENS sur la detection des particules nucleaires par les semi-conducteurs. Un type de detecteur, de structure pin, a ete particulierement etudie. U presente par rapport aux structures classiques pn ou npp{sup +}, et a purete egale du materiau de depart, l'avantage de permettre un volume sensible plus grand. En effet: a) a difference de potentiel egale appliquee au cristal, l'epaisseur totale des barrieres est plus importante; b) a courant inverse egal, la d.d.p. maximum qu'ils supportent est plus grande; c) toutes choses egales d'ailleurs, leur capacite par unite d'aire est plus faible et la surface maximum permise est donc plus grande. Les auteurs decrivent en detail quelques procedes permettant d'obtenir des structures pin dans le silicium, la zone intermediaire atteignant 1 mm. Enfin, ils decrivent quelques applications de ces detecteurs: spectroscopie {alpha} et {gamma}, mesure de dE/dX pour les particules relativistes

  16. Simulation study of signal formation in position sensitive planar p-on-n silicon detectors after short range charge injection

    International Nuclear Information System (INIS)

    Peltola, T.; Eremin, V.; Verbitskaya, E.; Härkönen, J.

    2017-01-01

    Segmented silicon detectors (micropixel and microstrip) are the main type of detectors used in the inner trackers of Large Hadron Collider (LHC) experiments at CERN. Due to the high luminosity and eventual high fluence of energetic particles, detectors with fast response to fit the short shaping time of 20–25 ns and sufficient radiation hardness are required. Charge collection measurements carried out at the Ioffe Institute have shown a reversal of the pulse polarity in the detector response to short-range charge injection. Since the measured negative signal is about 30–60% of the peak positive signal, the effect strongly reduces the CCE even in non-irradiated detectors. For further investigation of the phenomenon the measurements have been reproduced by TCAD simulations. As for the measurements, the simulation study was applied for the p-on-n strip detectors similar in geometry to those developed for the ATLAS experiment and for the Ioffe Institute designed p-on-n strip detectors with each strip having a window in the metallization covering the p + implant, allowing the generation of electron-hole pairs under the strip implant. Red laser scans across the strips and the interstrip gap with varying laser diameters and Si-SiO 2 interface charge densities ( Q f ) were carried out. The results verify the experimentally observed negative response along the scan in the interstrip gap. When the laser spot is positioned on the strip p + implant the negative response vanishes and the collected charge at the active strip increases respectively. The simulation results offer a further insight and understanding of the influence of the oxide charge density in the signal formation. The main result of the study is that a threshold value of Q f , that enables negligible losses of collected charges, is defined. The observed effects and details of the detector response for different charge injection positions are discussed in the context of Ramo's theorem.

  17. Simulation study of signal formation in position sensitive planar p-on-n silicon detectors after short range charge injection

    Science.gov (United States)

    Peltola, T.; Eremin, V.; Verbitskaya, E.; Härkönen, J.

    2017-09-01

    Segmented silicon detectors (micropixel and microstrip) are the main type of detectors used in the inner trackers of Large Hadron Collider (LHC) experiments at CERN. Due to the high luminosity and eventual high fluence of energetic particles, detectors with fast response to fit the short shaping time of 20-25 ns and sufficient radiation hardness are required. Charge collection measurements carried out at the Ioffe Institute have shown a reversal of the pulse polarity in the detector response to short-range charge injection. Since the measured negative signal is about 30-60% of the peak positive signal, the effect strongly reduces the CCE even in non-irradiated detectors. For further investigation of the phenomenon the measurements have been reproduced by TCAD simulations. As for the measurements, the simulation study was applied for the p-on-n strip detectors similar in geometry to those developed for the ATLAS experiment and for the Ioffe Institute designed p-on-n strip detectors with each strip having a window in the metallization covering the p+ implant, allowing the generation of electron-hole pairs under the strip implant. Red laser scans across the strips and the interstrip gap with varying laser diameters and Si-SiO2 interface charge densities (Qf) were carried out. The results verify the experimentally observed negative response along the scan in the interstrip gap. When the laser spot is positioned on the strip p+ implant the negative response vanishes and the collected charge at the active strip increases respectively. The simulation results offer a further insight and understanding of the influence of the oxide charge density in the signal formation. The main result of the study is that a threshold value of Qf, that enables negligible losses of collected charges, is defined. The observed effects and details of the detector response for different charge injection positions are discussed in the context of Ramo's theorem.

  18. Development of n+-in-p planar pixel quadsensor flip-chipped with FE-I4 readout ASICs

    International Nuclear Information System (INIS)

    Unno, Y.; Hanagaki, K.; Hori, R.; Ikegami, Y.; Nakamura, K.; Takubo, Y.; Kamada, S.; Yamamura, K.; Yamamoto, H.; Takashima, R.; Tojo, J.; Kono, T.; Nagai, R.; Saito, S.; Sugibayashi, K.; Hirose, M.; Jinnouchi, O.; Sato, S.; Sawai, H.; Hara, K.

    2017-01-01

    We have developed flip-chip modules applicable to the pixel detector for the HL-LHC. New radiation-tolerant n + -in-p planar pixel sensors of a size of four FE-I4 application-specific integrated circuits (ASICs) are laid out in a 6-in wafer. Variation in readout connection for the pixels at the boundary of ASICs is implemented in the design of quadsensors. Bump bonding technology is developed for four ASICs onto one quadsensor. Both sensors and ASICs are thinned to 150 μm before bump bonding, and are held flat with vacuum chucks. Using lead-free SnAg solder bumps, we encounter deficiency with large areas of disconnected bumps after thermal stress treatment, including irradiation. Surface oxidation of the solder bumps is identified as a critical source of this deficiency after bump bonding trials, using SnAg bumps with solder flux, indium bumps, and SnAg bumps with a newly-introduced hydrogen-reflow process. With hydrogen-reflow, we establish flux-less bump bonding technology with SnAg bumps, appropriate for mass production of the flip-chip modules with thin sensors and thin ASICs.

  19. Temperature dependent characterization of gallium arsenide X-ray mesa p-i-n photodiodes

    Energy Technology Data Exchange (ETDEWEB)

    Lioliou, G., E-mail: G.Lioliou@sussex.ac.uk; Barnett, A. M. [Semiconductor Materials and Devices Laboratory, Department Engineering and Design, School of Engineering and Informatics, University of Sussex, Falmer, Brighton BN1 9QT (United Kingdom); Meng, X.; Ng, J. S. [Department of Electronic and Electrical Engineering, University of Sheffield, Mappin Street, Sheffield S1 3JD (United Kingdom)

    2016-03-28

    Electrical characterization of two GaAs p{sup +}-i-n{sup +} mesa X-ray photodiodes over the temperature range 0 °C to 120 °C together with characterization of one of the diodes as an X-ray detector over the temperature range 0 °C to 60 °C is reported as part of the development of photon counting X-ray spectroscopic systems for harsh environments. The randomly selected diodes were fully etched and unpassivated. The diodes were 200 μm in diameter and had 7 μm thick i layers. The leakage current density was found to increase from (3 ± 1) nA/cm{sup −2} at 0 °C to (24.36 ± 0.05) μA/cm{sup −2} at 120 °C for D1 and from a current density smaller than the uncertainty (0.2 ± 1.2) nA/cm{sup −2} at 0 °C to (9.39 ± 0.02) μA/cm{sup −2} at 120 °C for D2 at the maximum investigated reverse bias (15 V). The best energy resolution (FWHM at 5.9 keV) was achieved at 5 V reverse bias, at each temperature; 730 eV at 0 °C, 750 eV at 20 °C, 770 eV at 40 °C, and 840 eV at 60 °C. It was found that the parallel white noise was the main source of the photopeak broadening only when the detector operated at 60 °C, at 5 V, 10 V, and 15 V reverse bias and at long shaping times (>5 μs), whereas the sum of the dielectric noise and charge trapping noise was the dominant source of noise for all the other spectra.

  20. Uncertainties of retrospective radon concentration measurements by multilayer surface trap detector

    International Nuclear Information System (INIS)

    Bastrikov, V.; Kruzhalov, A.; Zhukovsky, M.

    2006-01-01

    The detector for retrospective radon exposure measurements is developed. The detector consists of the multilayer package of solid-state nuclear track detectors LR-115 type. Nitrocellulose films works both as α-particle detector and as absorber decreasing the energy of α-particles. The uncertainties of implanted 210 Pb measurements by two- and three-layer detectors are assessed in dependence on surface 210 Po activity and gross background activity of the glass. The generalized compartment behavior model of radon decay products in the room atmosphere was developed and verified. It is shown that the most influencing parameters on the value of conversion coefficient from 210 Po surface activity to average radon concentration are aerosol particles concentration, deposition velocity of unattached 218 Po and air exchange rate. It is demonstrated that with the use of additional information on surface to volume room ratio, air exchange rate and aerosol particles concentration the systematic bias of conversion coefficient between surface activity of 210 Po and average radon concentration can be decreased up to 30 %. (N.C.)

  1. Bis{2-[(diisopropylphosphanylamino]pyridine-κ2N1,P}copper(I hexafluoridophosphate

    Directory of Open Access Journals (Sweden)

    Özgür Öztopcu

    2010-07-01

    Full Text Available The crystal structure of the title compound, [Cu(C11H19N2P2]PF6, is composed of discrete [Cu(PN-iPr2]+ cations [PN-iPr is 2-(diisopropylphosphanylaminopyridine] and PF6− anions. The Cu(I atom is bis-chelated by two independent PN-iPr ligands. It has a distorted tetrahedral coordination by two P atoms [Cu—P = 2.2277 (4 and 2.2257 (4 Å] and two pyridine N atoms [Cu—N = 2.0763 (11 and 2.0845 (12 Å]. Bond angles about Cu vary from 85.11 (3 (P—Cu—N to 130.37 (2° (P—Cu—P. In the crystal, N—H...F hydrogen bonds link the Cu complexes and the PF6− anions into continuous chains, which show a cross-bedded spatial arrangement. In addition, several weaker C—H...F interactions contribute to the coherence of the structure.

  2. Density of states measurements in a p-i-n solar cell

    Energy Technology Data Exchange (ETDEWEB)

    Crandall, R.S.; Wang, Q. [National Renewable Energy Lab., Golden, CO (United States)

    1996-05-01

    The authors describe results of density of states (DOS) profiling in p-i-n solar-cell devices using drive-level capacitance (DLC) techniques. Near the p-i interface the defect density is high, decreasing rapidly into the interior, reaching low values in the central region of the cell, and rising rapidly again at the n-i interface. They show that the states in the central region are neutral dangling-bond defects, whereas those near the interfaces with the doped layers are charged dangling bonds.

  3. Measurement of neutron detection efficiencies in NaI using the Crystal Ball detector

    Energy Technology Data Exchange (ETDEWEB)

    Stanislaus, T.D.S.; Koetke, D.D. E-mail: donald.koetke@valpo.edu; Allgower, C.; Bekrenev, V.; Benslama, K.; Berger, E.; Briscoe, W.J.; Clajus, M.; Comfort, J.R.; Craig, K.; Gibson, A.; Grosnick, D.; Huber, G.M.; Isenhower, D.; Kasprzyk, T.; Knecht, N.; Koulbardis, A.; Kozlenko, N.; Kruglov, S.; Kycia, T.; Lolos, G.J.; Lopatin, I.; Manley, D.M.; Manweiler, R.; Marusic, A.; McDonald, S.; Nefkens, B.M.K.; Olmsted, J.; Papandreou, Z.; Peaslee, D.; Peterson, R.J.; Phaisangittisakul, N.; Pulver, M.; Ramirez, A.F.; Sadler, M.; Shafi, A.; Slaus, I.; Spinka, H.; Starostin, A.; Staudenmaier, H.M.; Supek, I.; Thoms, J.; Tippens, W.B

    2001-04-21

    We report on a measurement of the neutron detection efficiency in NaI crystals in the Crystal Ball (CB) detector obtained from a study of {pi}{sup -}p{yields}{pi} degree sign n reactions at the Brookhaven National Laboratory AGS. A companion GEANT-based Monte Carlo study has been done to simulate these reactions in the CB, and a comparison with the data is provided.

  4. SiN sub x passivation of silicon surfaces

    Science.gov (United States)

    Olsen, L. C.

    1986-01-01

    The objectives were to perform surface characterization of high efficiency n+/p and p+/n silicon cells, to relate surface density to substrate dopant concentration, and to identify dominant current loss mechanisms in high efficiency cells. The approach was to measure density of states on homogeneously doped substrates with high frequency C-V and Al/SiN sub x/Si structures; to investigate density of states and photoresponse of high efficiency N+/P and P+/N cells; and to conduct I-V-T studies to identify current loss nechanisms in high efficiency cells. Results are given in tables and graphs.

  5. Surface Passivation of CdZnTe Detector by Hydrogen Peroxide Solution Etching

    Science.gov (United States)

    Hayes, M.; Chen, H.; Chattopadhyay, K.; Burger, A.; James, R. B.

    1998-01-01

    The spectral resolution of room temperature nuclear radiation detectors such as CdZnTe is usually limited by the presence of conducting surface species that increase the surface leakage current. Studies have shown that the leakage current can be reduced by proper surface preparation. In this study, we try to optimize the performance of CdZnTe detector by etching the detector with hydrogen peroxide solution as function of concentration and etching time. The passivation effect that hydrogen peroxide introduces have been investigated by current-voltage (I-V) measurement on both parallel strips and metal-semiconductor-metal configurations. The improvements on the spectral response of Fe-55 and 241Am due to hydrogen peroxide treatment are presented and discussed.

  6. Investigations of thin p-GaN light-emitting diodes with surface plasmon compatible metallization

    DEFF Research Database (Denmark)

    Fadil, Ahmed; Ou, Yiyu; Iida, Daisuke

    2016-01-01

    We investigate device performance of InGaN light-emitting diodes with a 30-nm p-GaN layer. The metallization used to separate the p-contact from plasmonic metals, reveals limitations on current spreading which reduces surface plasmonic enhancement.......We investigate device performance of InGaN light-emitting diodes with a 30-nm p-GaN layer. The metallization used to separate the p-contact from plasmonic metals, reveals limitations on current spreading which reduces surface plasmonic enhancement....

  7. High surface hole concentration p-type GaN using Mg implantation

    International Nuclear Information System (INIS)

    Long Tao; Yang Zhijian; Zhang Guoyi

    2001-01-01

    Mg ions were implanted on Mg-doped GaN grown by metalorganic chemical vapor deposition (MOCVD). The p-type GaN was achieved with high hole concentration (8.28 x 10 17 cm -3 ) conformed by Van derpauw Hall measurement after annealing at 800 degree C for 1 h. this is the first experimental report of Mg implantation on Mg-doped GaN and achieving p-type GaN with high surface hole concentration

  8. Preparation of ZnO film on p-Si and I-V characteristics of p-Si/n-ZnO

    Directory of Open Access Journals (Sweden)

    Shampa Mondal

    2012-01-01

    Full Text Available Zinc oxide (ZnO thin films were deposited on p-silicon (Si substrate from ammonium zincate bath following a chemical dipping technique called SILAR. Films in the thickness range 0.5-4.5 µm could be prepared by varying the number of dipping for a fixed concentration (0.125 M of zincate bath and fixed pH (11.00-11.10. Higher values of dipping produced nonadherent and poor quality films. Structural characterization by X-ray diffraction (XRD indicates the formation of polycrystalline single phase ZnO with strong c-axis orientation. The structural characteristics of the films were found to be a sensitive function of film thickness. The degree of orientation was found to be a function of film thickness and a maximum was found at around 2.2 µm. Scanning electron microscopy (SEM reveals the formation of sub-micrometer crystallites on silicon substrate. The coverage of crystallites (grains on substrate surface increases with number of dipping. Dense film containing grains distributed throughout the surface is obtained at large thicknesses. The ohmic nature of silver (Ag on ZnO and Aluminum (Al on p-Si was confirmed by I-V measurements. I-V characteristic of the p-Si/n-ZnO heterojunction was studied and rectification was observed. The maximum value of forward to reverse current ratio was ~15 at 3.0 V.

  9. Preparation of ZnO film on p-Si and I-V characteristics of p-Si/n-ZnO

    Directory of Open Access Journals (Sweden)

    Shampa Mondal

    2013-02-01

    Full Text Available Zinc oxide (ZnO thin films were deposited on p-silicon (Si substrate from ammonium zincate bath following a chemical dipping technique called SILAR. Films in the thickness range 0.5-4.5 µm could be prepared by varying the number of dipping for a fixed concentration (0.125 M of zincate bath and fixed pH (11.00-11.10. Higher values of dipping produced nonadherent and poor quality films. Structural characterization by X-ray diffraction (XRD indicates the formation of polycrystalline single phase ZnO with strong c-axis orientation. The structural characteristics of the films were found to be a sensitive function of film thickness. The degree of orientation was found to be a function of film thickness and a maximum was found at around 2.2 µm. Scanning electron microscopy (SEM reveals the formation of sub-micrometer crystallites on silicon substrate. The coverage of crystallites (grains on substrate surface increases with number of dipping. Dense film containing grains distributed throughout the surface is obtained at large thicknesses. The ohmic nature of silver (Ag on ZnO and Aluminum (Al on p-Si was confirmed by I-V measurements. I-V characteristic of the p-Si/n-ZnO heterojunction was studied and rectification was observed. The maximum value of forward to reverse current ratio was ~15 at 3.0 V.

  10. Photon detector configured to employ the Gunn effect and method of use

    Science.gov (United States)

    Cich, Michael J

    2015-03-17

    Embodiments disclosed herein relate to photon detectors configured to employ the Gunn effect for detecting high-energy photons (e.g., x-rays and gamma rays) and methods of use. In an embodiment, a photon detector for detecting high-energy photons is disclosed. The photon detector includes a p-i-n semiconductor diode having a p-type semiconductor region, an n-type semiconductor region, and a compensated i-region disposed between the p-type semiconductor region and the n-type semiconductor region. The compensated i-region and has a width of about 100 .mu.m to about 400 .mu.m and is configured to exhibit the Gunn effect when the p-i-n semiconductor diode is forward biased a sufficient amount. The compensated i-region is doped to include a free carrier concentration of less than about 10.sup.10 cm.sup.-3.

  11. N-isopropyl I-123 p-iodoamphetamine (IMP) brain SPECT in Alzheimer's disease

    Energy Technology Data Exchange (ETDEWEB)

    Momose, Toshimitsu; Nishikawa, Junichi; Kosaka, Noboru; Ohtake, Tohru; Watanabe, Toshiaki; Yoshikawa, Kohki; Iio, Masahiro [Tokyo Univ. (Japan). Faculty of Medicine

    1989-09-01

    Eighteen patients with Alzheimer's disease (AD), 5 patients with Pick disease (PD), 6 patients with other types of degenerative dementia (O) and 12 age-matched normal control subjects (N) were studied using N-isopropyl p-(I-123)iodoamphetamine (I-123 IMP) with SPECT. Regional to cerebellar activity (R/CE) ratio and frontal to parietal (F/R) activity ratio were evaluated in each case. I-123 IMP-SPECT revealed focal abnormality in all cases in AD, PD, O group, while XCT and/or MRI were normal or showed cerebral atrophy without focal abnormal density or intensity. In AD group, R/CE ratio in all the regions except for bilateral Rolandic area and left primary visual cortex were significantly lower (p<0.05 or p<0.01) than that in N group, and F/P ratio were significantly higher (p<0.01) than that in P and O group. In conclusion, I-123 IMP-SPECT is useful to detect focal perfusion abnormality in dementia and may be of value in differentiating Alzheimer's disease from dementia of non-Alzheimer type. (author).

  12. N-isopropyl I-123 p-iodoamphetamine (IMP) brain SPECT in Alzheimer's disease

    International Nuclear Information System (INIS)

    Momose, Toshimitsu; Nishikawa, Junichi; Kosaka, Noboru; Ohtake, Tohru; Watanabe, Toshiaki; Yoshikawa, Kohki; Iio, Masahiro

    1989-01-01

    Eighteen patients with Alzheimer's disease (AD), 5 patients with Pick disease (PD), 6 patients with other types of degenerative dementia (O) and 12 age-matched normal control subjects (N) were studied using N-isopropyl p-[I-123]iodoamphetamine (I-123 IMP) with SPECT. Regional to cerebellar activity (R/CE) ratio and frontal to parietal (F/R) activity ratio were evaluated in each case. I-123 IMP-SPECT revealed focal abnormality in all cases in AD, PD, O group, while XCT and/or MRI were normal or showed cerebral atrophy without focal abnormal density or intensity. In AD group, R/CE ratio in all the regions except for bilateral Rolandic area and left primary visual cortex were significantly lower (p<0.05 or p<0.01) than that in N group, and F/P ratio were significantly higher (p<0.01) than that in P and O group. In conclusion, I-123 IMP-SPECT is useful to detect focal perfusion abnormality in dementia and may be of value in differentiating Alzheimer's disease from dementia of non-Alzheimer type. (author)

  13. A multilayer surface detector for ultracold neutrons

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Zhehui, E-mail: zwang@lanl.gov [Los Alamos National Laboratory, Los Alamos, NM 87545 (United States); Hoffbauer, M.A.; Morris, C.L. [Los Alamos National Laboratory, Los Alamos, NM 87545 (United States); Callahan, N.B.; Adamek, E.R. [Indiana University, Bloomington, IN 47405 (United States); Bacon, J.D. [Los Alamos National Laboratory, Los Alamos, NM 87545 (United States); Blatnik, M. [Cleveland State University, Cleveland, OH 44115 (United States); Brandt, A.E. [North Carolina State University, Raleigh, NC 27695 (United States); Broussard, L.J.; Clayton, S.M. [Los Alamos National Laboratory, Los Alamos, NM 87545 (United States); Cude-Woods, C. [North Carolina State University, Raleigh, NC 27695 (United States); Currie, S. [Los Alamos National Laboratory, Los Alamos, NM 87545 (United States); Dees, E.B. [North Carolina State University, Raleigh, NC 27695 (United States); Ding, X. [Virginia Polytechnic Institute and State University, Blacksburg, VA 24061 (United States); Gao, J. [Los Alamos National Laboratory, Los Alamos, NM 87545 (United States); Gray, F.E. [Regis University, Denver, CO 80221 (United States); Hickerson, K.P. [University of California Los Angeles, Los Angeles, CA 90095 (United States); Holley, A.T. [Tennessee Technological University, Cookeville, TN 38505 (United States); Ito, T.M. [Los Alamos National Laboratory, Los Alamos, NM 87545 (United States); Liu, C.-Y. [Indiana University, Bloomington, IN 47405 (United States); and others

    2015-10-21

    A multilayer surface detector for ultracold neutrons (UCNs) is described. The top {sup 10}B layer is exposed to vacuum and directly captures UCNs. The ZnS:Ag layer beneath the {sup 10}B layer is a few microns thick, which is sufficient to detect the charged particles from the {sup 10}B(n,α){sup 7}Li neutron-capture reaction, while thin enough that ample light due to α and {sup 7}Li escapes for detection by photomultiplier tubes. A 100-nm thick {sup 10}B layer gives high UCN detection efficiency, as determined by the mean UCN kinetic energy, detector materials, and other parameters. Low background, including negligible sensitivity to ambient neutrons, has also been verified through pulse-shape analysis and comparison with other existing {sup 3}He and {sup 10}B detectors. This type of detector has been configured in different ways for UCN flux monitoring, development of UCN guides and neutron lifetime research.

  14. Effect of crystal shape, size and reflector type on operation characteristics of gamma-radiation detectors based on CsI(Tl) and CsI(Na) scintillators

    International Nuclear Information System (INIS)

    Globus, M.E.; Grinyov, B.V.; Ratner, M.A.

    1996-01-01

    Operation characteristics of CsI(Tl) and CsI(Na) scintillation detectors, to a large degree connected with light collection in crystals, are calculated for various shapes, sizes and reflecting surface types. Allowance is made for the true light reflection indicatrix which is characterized by the effective mirror constituent of the reflected light, p. Its value , averaged over incidence angle, is used for the classification of reflecting surfaces. Operation characteristics (in particular, spectrometric ones) are found to be essentially dependent on . Tables of operation characteristics, given below, permit one to make inferential conclusions on an optimal combination of the shape, sizes an the reflecting surface version

  15. High surface hole concentration p-type GaN using Mg implantation

    CERN Document Server

    Long Tao; Zhang Guo Yi

    2001-01-01

    Mg ions were implanted on Mg-doped GaN grown by metalorganic chemical vapor deposition (MOCVD). The p-type GaN was achieved with high hole concentration (8.28 x 10 sup 1 sup 7 cm sup - sup 3) conformed by Van derpauw Hall measurement after annealing at 800 degree C for 1 h. this is the first experimental report of Mg implantation on Mg-doped GaN and achieving p-type GaN with high surface hole concentration

  16. The effect of charge collection recovery in silicon p-n junction detectors irradiated by different particles

    International Nuclear Information System (INIS)

    Verbitskaya, E.; Abreu, M.; Anbinderis, P.; Anbinderis, T.; D'Ambrosio, N.; Boer, W. de; Borchi, E.; Borer, K.; Bruzzi, M.; Buontempo, S.; Casagrande, L.; Chen, W.; Cindro, V.; Dezillie, B.; Dierlamm, A.; Eremin, V.; Gaubas, E.; Gorbatenko, V.; Granata, V.; Grigoriev, E.; Grohmann, S.; Hauler, F.; Heijne, E.; Heising, S.; Hempel, O.; Herzog, R.; Haerkoenen, J.; Ilyashenko, I.; Janos, S.; Jungermann, L.; Kalesinskas, V.; Kapturauskas, J.; Laiho, R.; Li, Z.; Mandic, I.; De Masi, Rita; Menichelli, D.; Mikuz, M.; Militaru, O.; Niinikoski, T.O.; O'Shea, V.; Pagano, S.; Palmieri, V.G.; Paul, S.; Perea Solano, B.; Piotrzkowski, K.; Pirollo, S.; Pretzl, K.; Rato Mendes, P.; Ruggiero, G.; Smith, K.; Sonderegger, P.; Sousa, P.; Tuominen, E.; Vaitkus, J.; Da Via, C.; Wobst, E.; Zavrtanik, M.

    2003-01-01

    The recovery of the charge collection efficiency (CCE) at low temperatures, the so-called 'Lazarus effect', was studied in Si detectors irradiated by fast reactor neutrons, by protons of medium and high energy, by pions and by gamma-rays. The experimental results show that the Lazarus effect is observed: (a) after all types of irradiation; (b) before and after space charge sign inversion; (c) only in detectors that are biased at voltages resulting in partial depletion at room temperature. The experimental temperature dependence of the CCE for proton-irradiated detectors shows non-monotonic behaviour with a maximum at a temperature defined as the CCE recovery temperature. The model of the effect for proton-irradiated detectors agrees well with that developed earlier for detectors irradiated by neutrons. The same midgap acceptor-type and donor-type levels are responsible for the Lazarus effect in detectors irradiated by neutrons and by protons. A new, abnormal 'zigzag'-shaped temperature dependence of the CCE was observed for detectors irradiated by all particles (neutrons, protons and pions) and by an ultra-high dose of γ-rays, when operating at low bias voltages. This effect is explained in the framework of the double-peak electric field distribution model for heavily irradiated detectors. The redistribution of the space charge region depth between the depleted regions adjacent to p + and n + contacts is responsible for the 'zigzag'- shaped curves. It is shown that the CCE recovery temperature increases with reverse bias in all detectors, regardless of the type of radiation

  17. Design and characterization of GaN p-i-n diodes for betavoltaic devices

    Science.gov (United States)

    Khan, Muhammad R.; Smith, Joshua R.; Tompkins, Randy P.; Kelley, Stephen; Litz, Marc; Russo, John; Leathersich, Jeff; Shahedipour-Sandvik, Fatemeh (Shadi); Jones, Kenneth A.; Iliadis, Agis

    2017-10-01

    The performance of gallium nitride (GaN) p-i-n diodes were investigated for use as a betavoltaic device. Dark IV measurements showed a turn on-voltage of approximately 3.2 V, specific-on-resistance of 15.1 mΩ cm2 and a reverse leakage current of -0.14 mA/cm2 at -10 V. A clear photo-response was observed when IV curves were measured under a light source at a wavelength of 310 nm (4.0 eV). In addition, GaN p-i-n diodes were tested under an electron-beam in order to simulate common beta radiation sources ranging from that of 3H (5.6 keV average) to 63Ni (17 keV average). From this data, we estimated output powers of 53 nW and 750 nW with overall efficiencies of 0.96% and 4.4% for our device at incident electron energies of 5.6 keV and 17 keV corresponding to 3H and 63Ni beta sources respectively.

  18. Changes of electronic properties of p-GaN(0 0 0 1) surface after low-energy N+-ion bombardment

    Science.gov (United States)

    Grodzicki, M.; Mazur, P.; Ciszewski, A.

    2018-05-01

    The p-GaN(0 0 0 1) crystal with a relatively low acceptor concentration of 5 × 1016 cm-3 is used in these studies, which are carried out in situ under ultrahigh vacuum (UHV) by ultraviolet photoelectron spectroscopy (UPS), X-ray photoelectron spectroscopy (XPS) and low-energy electron diffraction (LEED). The p-GaN(0 0 0 1)-(1 × 1) surface is achieved by thermal cleaning. N+-ion bombardment by a 200 eV ion beam changes the surface stoichiometry, enriches it with nitrogen, and disorders it. Such modified surface layer inverts its semiconducting character from p- into n-type. The electron affinity for the already cleaned p-GaN surface and that just after bombardment shows a shift from 2.2 eV to 3.2 eV, as well as an increase of band bending at the vacuum/surface interface from 1.4 eV to 2.5 eV. Proper post-bombardment heating of the sample restores the initial atomic order of the modified layer, leaving its n-type semiconducting character unchanged. The results of the measurements are discussed based on two types of surface states concepts.

  19. Study of J/psi -> p(p)over-bar and J/psi -> n(n)over-bar

    NARCIS (Netherlands)

    Ablikim, M.; Achasov, M. N.; Ambrose, D. J.; An, F. F.; An, Q.; An, Z. H.; Bai, J. Z.; Ban, Y.; Becker, J.; Berger, N.; Bertani, M.; Bian, J. M.; Boger, E.; Bondarenko, O.; Boyko, I.; Briere, R. A.; Bytev, V.; Cai, X.; Calcaterra, A.; Cao, G. F.; Chang, J. F.; Chelkov, G.; Chen, G.; Chen, H. S.; Chen, J. C.; Chen, M. L.; Chen, S. J.; Chen, Y.; Chen, Y. B.; Cheng, H. P.; Chu, Y. P.; Cronin-Hennessy, D.; Dai, H. L.; Dai, J. P.; Dedovich, D.; Deng, Z. Y.; Denig, A.; Denysenko, I.; Destefanis, M.; Ding, W. M.; Ding, Y.; Dong, L. Y.; Dong, M. Y.; Du, S. X.; Fang, J.; Fang, S. S.; Fava, L.; Feldbauer, F.; Feng, C. Q.; Ferroli, R. B.; Fu, C. D.; Fu, J. L.; Gao, Y.; Geng, C.; Goetzen, K.; Gong, W. X.; Gradl, W.; Greco, M.; Gu, M. H.; Gu, Y. T.; Guan, Y. H.; Guo, A. Q.; Guo, L. B.; Guo, Y. P.; Han, Y. L.; Hao, X. Q.; Harris, F. A.; He, K. L.; He, M.; He, Z. Y.; Held, T.; Heng, Y. K.; Hou, Z. L.; Hu, H. M.; Hu, J. F.; Hu, T.; Huang, B.; Huang, G. M.; Huang, J. S.; Huang, X. T.; Huang, Y. P.; Hussain, T.; Ji, C. S.; Ji, Q.; Ji, X. B.; Ji, X. L.; Jia, L. K.; Jiang, L. L.; Jiang, X. S.; Jiao, J. B.; Jiao, Z.; Jin, D. P.; Jin, S.; Jing, F. F.; Kalantar-Nayestanaki, N.; Kavatsyuk, M.; Kuehn, W.; Lai, W.; Lange, J. S.; Leung, J. K. C.; Li, C. H.; Li, Cheng; Li, Cui; Li, D. M.; Li, F.; Li, G.; Li, H. B.; Li, J. C.; Li, K.; Li, Lei; Li, N. B.; Li, Q. J.; Li, S. L.; Li, W. D.; Li, W. G.; Li, X. L.; Li, X. N.; Li, X. Q.; Li, X. R.; Li, Z. B.; Liang, H.; Liang, Y. F.; Liang, Y. T.; Liao, G. R.; Liao, X. T.; Liu, B. J.; Liu, B. J.; Liu, C. L.; Liu, C. X.; Liu, C. Y.; Liu, F. H.; Liu, Fang; Liu, Feng; Liu, H.; Liu, H. B.; Liu, H. H.; Liu, H. M.; Liu, H. W.; Liu, J. P.; Liu, K. Y.; Liu, Kai; Liu, Kun; Liu, P. L.; Liu, S. B.; Liu, X.; Liu, X. H.; Liu, Y.; Liu, Y. B.; Liu, Z. A.; Liu, Zhiqiang; Liu, Zhiqing; Loehner, H.; Lu, G. R.; Lu, H. J.; Lu, J. G.; Lu, Q. W.; Lu, X. R.; Lu, Y. P.; Luo, C. L.; Luo, M. X.; Luo, T.; Luo, X. L.; Lv, M.; Ma, C. L.; Ma, F. C.; Ma, H. L.; Ma, Q. M.; Ma, S.; Ma, T.; Ma, X. Y.; Ma, Y.; Maas, F. E.; Maggiora, M.; Malik, Q. A.; Mao, H.; Mao, Y. J.; Mao, Z. P.; Messchendorp, J. G.; Min, J.; Min, T. J.; Mitchell, R. E.; Mo, X. H.; Morales, C. Morales; Motzko, C.; Muchnoi, N. Yu.; Nefedov, Y.; Nicholson, C.; Nikolaev, I. B.; Ning, Z.; Olsen, S. L.; Ouyang, Q.; Pacetti, S.; Park, J. W.; Pelizaeus, M.; Peters, K.; Ping, J. L.; Ping, R. G.; Poling, R.; Prencipe, E.; Pun, C. S. J.; Qi, M.; Qian, S.; Qiao, C. F.; Qin, X. S.; Qin, Y.; Qin, Z. H.; Qiu, J. F.; Rashid, K. H.; Rong, G.; Ruan, X. D.; Sarantsev, A.; Schulze, J.; Shao, M.; Shen, C. P.; Shen, X. Y.; Sheng, H. Y.; Shepherd, M. R.; Song, X. Y.; Spataro, S.; Spruck, B.; Sun, D. H.; Sun, G. X.; Sun, J. F.; Sun, S. S.; Sun, X. D.; Sun, Y. J.; Sun, Y. Z.; Sun, Z. J.; Sun, Z. T.; Tang, C. J.; Tang, X.; Thorndike, E. H.; Tian, H. L.; Toth, D.; Ullrich, M.; Varner, G. S.; Wang, B.; Wang, B. Q.; Wang, K.; Wang, L. L.; Wang, L. S.; Wang, M.; Wang, P.; Wang, P. L.; Wang, Q.; Wang, Q. J.; Wang, S. G.; Wang, X. F.; Wang, X. L.; Wang, Y. D.; Wang, Y. F.; Wang, Y. Q.; Wang, Z.; Wang, Z. G.; Wang, Z. Y.; Wei, D. H.; Weidenkaff, P.; Wen, Q. G.; Wen, S. P.; Werner, M.; Wiedner, U.; Wu, L. H.; Wu, N.; Wu, S. X.; Wu, W.; Wu, Z.; Xia, L. G.; Xiao, Z. J.; Xie, Y. G.; Xiu, Q. L.; Xu, G. F.; Xu, G. M.; Xu, H.; Xu, Q. J.; Xu, X. P.; Xu, Y.; Xu, Z. R.; Xue, F.; Xue, Z.; Yan, L.; Yan, W. B.; Yan, Y. H.; Yang, H. X.; Yang, T.; Yang, Y.; Yang, Y. X.; Ye, H.; Ye, M.; Ye, M. H.; Yu, B. X.; Yu, C. X.; Yu, J. S.; Yu, S. P.; Yuan, C. Z.; Yuan, W. L.; Yuan, Y.; Zafar, A. A.; Zallo, A.; Zeng, Y.; Zhang, B. X.; Zhang, B. Y.; Zhang, C. C.; Zhang, D. H.; Zhang, H. H.; Zhang, H. Y.; Zhang, J.; Zhang, J. G.; Zhang, J. Q.; Zhang, J. W.; Zhang, J. Y.; Zhang, J. Z.; Zhang, L.; Zhang, S. H.; Zhang, T. R.; Zhang, X. J.; Zhang, X. Y.; Zhang, Y.; Zhang, Y. H.; Zhang, Y. S.; Zhang, Z. P.; Zhang, Z. Y.; Zhao, G.; Zhao, H. S.; Zhao, J. W.; Zhao, K. X.; Zhao, Lei; Zhao, Ling; Zhao, M. G.; Zhao, Q.; Zhao, S. J.; Zhao, T. C.; Zhao, X. H.; Zhao, Y. B.; Zhao, Z. G.; Zhemchugov, A.; Zheng, B.; Zheng, J. P.; Zheng, Y. H.; Zheng, Z. P.; Zhong, B.; Zhong, J.; Zhou, L.; Zhou, X. K.; Zhou, X. R.; Zhu, C.; Zhu, K.; Zhu, K. J.; Zhu, S. H.; Zhu, X. L.; Zhu, X. W.; Zhu, Y. M.; Zhu, Y. S.; Zhu, Z. A.; Zhuang, J.; Zou, B. S.; Zou, J. H.; Zuo, J. X.

    2012-01-01

    The decays J/psi -> p (p) over bar and J/psi -> n (n) over bar have been investigated with a sample of 225.2 x 10(6) J/psi events collected with the BESIII detector at the BEPCII e(+)e(-) collider. The branching fractions are determined to be B(J/psi -> p (p) over bar) = (2.112 +/- 0.004 +/- 0.031 x

  20. G.A.M.I.N., the graphite neutron detector. Development and use in the dosimetry of radio-induced damages

    International Nuclear Information System (INIS)

    Cance, M.; Genthon, J.P.; Salon, L.; Micaud, G.

    1975-01-01

    The so-called G.A.M.I.N. graphite detector is well suited to determining fluences of radiation damage in reactor materials. It enables the measurement of the index (graphite damage flux)/(nickel flux). Measurements have been performing in Osiris and most of the testing reactors in Europe (H 2 O, D 2 O, G and fast). All measurements results are recapitulated here. It is shown how G.A.M.I.N. can determine note only graphite fluxes, but by a simple interpretation the damage fluxes typical of other materials [fr

  1. Characterization of p-CuI prepared by the SILAR technique on Cu-tape/n-CuInS2 for solar cells

    International Nuclear Information System (INIS)

    Sankapal, B.R.; Ennaoui, A.; Guminskaya, T.; Dittrich, Th.; Bohne, W.; Roehrich, J.; Strub, E.; Lux-Steiner, M.Ch.

    2005-01-01

    CuI has been synthesized at room temperature on Cu-tape/n-CuInS 2 by using the SILAR technique (successive ionic layer adsorption and reaction). The influence of wet chemical iodine treatment on the CuI has been investigated in more detail. The films were characterized by X-ray diffraction (XRD), transmission electron microscopy (TEM), scanning electron microscopy (SEM), X-ray photoelectron spectroscopy (XPS), elastic recoil detection analysis (ERDA) and surface photovoltage (SPV) techniques. The CuI films contain the no. gammano. -phase of the Zinkblende structure. The crystallites are preferentially oriented in the (111) direction. After wet chemical iodine treatment, the fibrous surface morphology changed to a more dense CuI film with larger crystallites. Oxides could not be detected on the CuI surface. The density of surface states of CIS decreased after the CuI deposition. The importance of the wet chemical iodine treatment for the performance of Cu-tape/n-CuInS 2 /p-CuI solar cells has been demonstrated

  2. Performance of the full size nGEM detector for the SPIDER experiment

    Energy Technology Data Exchange (ETDEWEB)

    Muraro, A., E-mail: muraro@ifp.cnr.it [Istituto di Fisica del Plasma “P. Caldirola” – CNR, Milan (Italy); Dipartimento di Fisica “G. Occhialini”, University of Milano-Bicocca (Italy); Croci, G. [Istituto di Fisica del Plasma “P. Caldirola” – CNR, Milan (Italy); Dipartimento di Fisica “G. Occhialini”, University of Milano-Bicocca (Italy); Sez. INFN Milano-Bicocca, Milano (Italy); Albani, G. [Dipartimento di Fisica “G. Occhialini”, University of Milano-Bicocca (Italy); Claps, G. [Laboratori Nazionali di Frascati – INFN, Frascati (Italy); Cavenago, M. [Laboratori Nazionali di Legnaro – INFN, Legnaro (Italy); Cazzaniga, C. [Dipartimento di Fisica “G. Occhialini”, University of Milano-Bicocca (Italy); Dalla Palma, M. [Consorzio RFX, Padova (Italy); Grosso, G. [Istituto di Fisica del Plasma “P. Caldirola” – CNR, Milan (Italy); Murtas, F. [Laboratori Nazionali di Frascati – INFN, Frascati (Italy); Pasqualotto, R. [Consorzio RFX, Padova (Italy); Perelli Cippo, E. [Istituto di Fisica del Plasma “P. Caldirola” – CNR, Milan (Italy); Rebai, M. [Dipartimento di Fisica “G. Occhialini”, University of Milano-Bicocca (Italy); Tardocchi, M.; Tollin, M. [Istituto di Fisica del Plasma “P. Caldirola” – CNR, Milan (Italy); Gorini, G. [Dipartimento di Fisica “G. Occhialini”, University of Milano-Bicocca (Italy); Sez. INFN Milano-Bicocca, Milano (Italy)

    2016-03-21

    The ITER neutral beam test facility under construction in Padova will host two experimental devices: SPIDER, a 100 kV negative H/D RF beam source, and MITICA, a full scale, 1 MeV deuterium beam injector. SPIDER will start operations in 2016 while MITICA is expected to start during 2019. Both devices feature a beam dump used to stop the produced deuteron beam. Detection of fusion neutrons produced between beam-deuterons and dump-implanted deuterons will be used as a means to resolve the horizontal beam intensity profile. The neutron detection system will be placed right behind the beam dump, as close to the neutron emitting surface as possible thus providing the map of the neutron emission on the beam dump surface. The system uses nGEM neutron detectors. These are Gas Electron Multiplier detectors equipped with a cathode that also serves as neutron–proton converter foil. The cathode is designed to ensure that most of the detected neutrons at a point of the nGEM surface are emitted from the corresponding beamlet footprint (with dimensions of about 40×22 mm{sup 2}) on the dump front surface. The size of the nGEM detector for SPIDER is 352 mm×200 mm. Several smaller size prototypes have been successfully made in the last years and the experience gained on these detectors has led to the production of the full size detector for SPIDER during 2014. This nGEM has a read-out board made of 256 pads (arranged in a 16×16 matrix) each with a dimension of 22 mm×13 mm. This paper describes the production of this detector and its tests (in terms of beam profile reconstruction capability, uniformity over the active area, gamma rejection capability and time stability) performed on the ROTAX beam-line at the ISIS spallation source (Didcot-UK).

  3. Performance of the full size nGEM detector for the SPIDER experiment

    International Nuclear Information System (INIS)

    Muraro, A.; Croci, G.; Albani, G.; Claps, G.; Cavenago, M.; Cazzaniga, C.; Dalla Palma, M.; Grosso, G.; Murtas, F.; Pasqualotto, R.; Perelli Cippo, E.; Rebai, M.; Tardocchi, M.; Tollin, M.; Gorini, G.

    2016-01-01

    The ITER neutral beam test facility under construction in Padova will host two experimental devices: SPIDER, a 100 kV negative H/D RF beam source, and MITICA, a full scale, 1 MeV deuterium beam injector. SPIDER will start operations in 2016 while MITICA is expected to start during 2019. Both devices feature a beam dump used to stop the produced deuteron beam. Detection of fusion neutrons produced between beam-deuterons and dump-implanted deuterons will be used as a means to resolve the horizontal beam intensity profile. The neutron detection system will be placed right behind the beam dump, as close to the neutron emitting surface as possible thus providing the map of the neutron emission on the beam dump surface. The system uses nGEM neutron detectors. These are Gas Electron Multiplier detectors equipped with a cathode that also serves as neutron–proton converter foil. The cathode is designed to ensure that most of the detected neutrons at a point of the nGEM surface are emitted from the corresponding beamlet footprint (with dimensions of about 40×22 mm"2) on the dump front surface. The size of the nGEM detector for SPIDER is 352 mm×200 mm. Several smaller size prototypes have been successfully made in the last years and the experience gained on these detectors has led to the production of the full size detector for SPIDER during 2014. This nGEM has a read-out board made of 256 pads (arranged in a 16×16 matrix) each with a dimension of 22 mm×13 mm. This paper describes the production of this detector and its tests (in terms of beam profile reconstruction capability, uniformity over the active area, gamma rejection capability and time stability) performed on the ROTAX beam-line at the ISIS spallation source (Didcot-UK).

  4. Coaxial nuclear radiation detector with deep junction and radial field gradient

    International Nuclear Information System (INIS)

    Hall, R.N.

    1979-01-01

    Germanium radiation detectors are manufactured by diffusion lithium into high purity p-type germanium. The diffusion is most readily accomplished from a lithium-lead-bismuth alloy at approximately 430 0 and is monitored by a quartz half cell containing a standard composition of this alloy. Detectors having n-type cores may be constructed by converting high purity p-type germanium to n-type by a lithium diffusion and subsequently diffusing some of the lithium back out through the surface to create a deep p-n junction. Coaxial germanium detectors comprising deep p-n junctions are produced by the lithium diffusion process

  5. X-ray Peltier cooled detectors for X-ray fluorescence analysis

    International Nuclear Information System (INIS)

    Loupilov, A.; Sokolov, A.; Gostilo, V.

    2001-01-01

    The recent results on development of X-ray Si(Li), Si-planar and CdTe p-i-n detectors cooled by Peltier coolers for fabrication of laboratory and portable XRF analysers for different applications are discussed. Low detection limits of XRF analysers are provided by increasing of detectors sensitive surface; improvement of their spectrometrical characteristics; decreasing of front-end-electronics noise level; Peltier coolers and vacuum chambers cooling modes optimization. Solution of all mentioned tasks allowed to develop Peltier cooled detectors with the following performances: (1.) Si(Li) detectors: S=20 mm 2 , thickness=3.5 mm, 175 eV (5.9 keV), 430 eV (59.6 keV); S=100 mm 2 ; thickness=4.5 mm, 270 eV (5.9 keV), 485 eV (59.6 keV). (2.) Si-planar detector: S=10 mm 2 , thickness=0.4 mm, 230 eV (5.9 keV), 460 eV (59.6 keV). (3.) CdTe p-i-n detectors: S=16 mm 2 , thickness=0.5 mm, 350 eV (5.9 keV), 585 eV (59.6 keV). S=16 mm 2 , thickness=1.2 mm, 310 eV (5.9 keV), 600 eV (59.6 keV). Advantages and disadvantages of all types of detectors for X-ray fluorescence analysis are compared. Spectra are presented. Application of different XRF analysers based on developed detectors in medicine, environmental science, industry, cryminalistics and history of art are demonstrated

  6. X-ray Peltier cooled detectors for X-ray fluorescence analysis

    International Nuclear Information System (INIS)

    Loupilov, A.; Sokolov, A.; Gostilo, V.

    2000-01-01

    The recent results on development of X-ray Si(Li), Si-planar and CdTe p-i- n detectors cooled by Peltier coolers for fabrication of laboratory and portable XRF analysers for different applications are discussed. Low detection limits of XRF analysers are provided by increasing of detectors sensitive surface; improvement of their spectrometrical characteristics; decreasing of front-end-electronics noise level; Peltier coolers and vacuum chambers cooling modes optimization. Solution of all mentioned tasks allowed to develop Peltier cooled detectors with the following performances: (1) Si(Li) detectors: S = 20 mm 2 , thickness = 3.5 mm, 175 eV (5.9 keV), 430 eV (59.6 keV); S = 100 mm 2 ; thickness = 4.5 mm, 270 eV (5.9 keV), 485 eV (59,6 keV). (2) Si-planar detector: S = 10 mm 2 , thickness = 0.4 mm, 230 eV (5.9 keV), 460 eV (59.6 keV). (3) CdTe p-i-n detectors: S = 16 mm 2 , thickness 0.5 mm, 350 eV (5.9 keV), 585 eV (59.6 keV). S = 16 mm 2 , thickness = 1.2 mm, 310 eV (5.9 keV), 600 eV (59.6 keV). Advantages and disadvantages of all types of detectors for X-ray fluorescence analysis are compared. Spectra are presented. Application of different XRF analysers based on developed detectors in medicine, environmental science, industry, criminalistics and history of art are demonstrated. (author)

  7. Method for manufacturing nuclear radiation detector with deep diffused junction

    International Nuclear Information System (INIS)

    Hall, R.N.

    1977-01-01

    Germanium radiation detectors are manufactured by diffusing lithium into high purity p-type germanium. The diffusion is most readily accomplished from a lithium-lead-bismuth alloy at approximately 430 0 C and is monitored by a quartz half cell containing a standard composition of this alloy. Detectors having n-type cores may be constructed by converting high purity p-type germanium to n-type by a lithium diffusion and subsequently diffusing some of the lithium back out through the surface to create a deep p-n junction. Production of coaxial germanium detectors comprising deep p-n junctions by the lithium diffusion process is described

  8. Surface photovoltage studies of p-type AlGaN layers after reactive-ion etching

    Science.gov (United States)

    McNamara, J. D.; Phumisithikul, K. L.; Baski, A. A.; Marini, J.; Shahedipour-Sandvik, F.; Das, S.; Reshchikov, M. A.

    2016-10-01

    The surface photovoltage (SPV) technique was used to study the surface and electrical properties of Mg-doped, p-type AlxGa1-xN (0.06 GaN:Mg thin films and from the predictions of a thermionic model for the SPV behavior. In particular, the SPV of the p-AlGaN:Mg layers exhibited slower-than-expected transients under ultraviolet illumination and delayed restoration to the initial dark value. The slow transients and delayed restorations can be attributed to a defective surface region which interferes with normal thermionic processes. The top 45 nm of the p-AlGaN:Mg layer was etched using a reactive-ion etch which caused the SPV behavior to be substantially different. From this study, it can be concluded that a defective, near-surface region is inhibiting the change in positive surface charge by allowing tunneling or hopping conductivity of holes from the bulk to the surface, or by the trapping of electrons traveling to the surface by a high concentration of defects in the near-surface region. Etching removes the defective layer and reveals a region of presumably higher quality, as evidenced by substantial changes in the SPV behavior.

  9. Vibrational Fingerprints of Low-Lying PtnP2n (n = 1–5) Cluster Structures from Global Optimization Based on Density Functional Theory Potential Energy Surfaces

    KAUST Repository

    Jedidi, Abdesslem; Li, Rui; Fornasiero, Paolo; Cavallo, Luigi; Carbonniere, Philippe

    2015-01-01

    Vibrational fingerprints of small PtnP2n (n = 1–5) clusters were computed from their low-lying structures located from a global exploration of their DFT potential energy surfaces with the GSAM code. Five DFT methods were assessed from the CCSD(T) wavenumbers of PtP2 species and CCSD relative energies of Pt2P4 structures. The eight first PtnP2n isomers found are reported. The vibrational computations reveal (i) the absence of clear signatures made by overtone or combination bands due to very weak mechanical and electrical anharmonicities and (ii) some significant and recurrent vibrational fingerprints in correlation with the different PP bonding situations in the PtnP2n structures.

  10. Vibrational Fingerprints of Low-Lying PtnP2n (n = 1–5) Cluster Structures from Global Optimization Based on Density Functional Theory Potential Energy Surfaces

    KAUST Repository

    Jedidi, Abdesslem

    2015-11-13

    Vibrational fingerprints of small PtnP2n (n = 1–5) clusters were computed from their low-lying structures located from a global exploration of their DFT potential energy surfaces with the GSAM code. Five DFT methods were assessed from the CCSD(T) wavenumbers of PtP2 species and CCSD relative energies of Pt2P4 structures. The eight first PtnP2n isomers found are reported. The vibrational computations reveal (i) the absence of clear signatures made by overtone or combination bands due to very weak mechanical and electrical anharmonicities and (ii) some significant and recurrent vibrational fingerprints in correlation with the different PP bonding situations in the PtnP2n structures.

  11. Re-evaluation of microscopic and integral cross-section data for important dosimetry reactions. Re-evaluation of the excitation functions for the 24Mg(n,p)24Na, 32S(n,p)32P, 60Ni(n,p)60m+gCo, 63Cu(n,2n)62Cu, 65Cu(n,2n)64Cu, 64Zn(n,p)64Cu, 115In(n,2n)114mIn, 127I(n,2n)126I, 197Au(n,2n)196Au and 199Hg(n,n')199mHg reactions

    International Nuclear Information System (INIS)

    Zolotarev, K.I.

    2008-08-01

    Re-evaluations of cross sections and their associated covariance matrices have been carried out for ten dosimetry reactions: - excitation functions for the 63 Cu(n,2n) 62 Cu, 65 Cu(n,2n) 64 Cu, 64 Zn(n,p) 64 Cu, 115 In(n,2n) 114m In and 199 Hg(n,n') 199m Hg reactions were re-evaluated over the neutron energy range from threshold to 20 MeV; - excitation functions for the 24 Mg(n,p) 24 Na, 32 S(n,p) 32 P and 60 Ni(n,p) 60m+g Co were reevaluated in the energy range from threshold to 21 MeV; - excitation functions for the 127 I(n,2n) 126 I and 197 Au(n,2n) 196 Au reactions were reevaluated in the energy range from threshold to 32 and 40 MeV, respectively. Benchmark calculations performed for 235 U thermal fission and 252 Cf spontaneous fission neutron spectra show that the integral cross sections derived from the newly evaluated excitation functions exhibit improved agreement with related experimental data when compared with the equivalent data from the IRDF-2002 library. (author)

  12. Radiation resistance and comparative performance of ITO/InP and n/p InP homojunction solar cells

    International Nuclear Information System (INIS)

    Weinberg, I.; Swartz, C.K.; Hart, R.E. Jr.; Coutts, T.J.

    1988-09-01

    The radiation resistance of ITO/InP cells processed by DC magnetron sputtering is compared to that of standard n/p InP and GaAs homojunction cells. After 20 MeV proton irradiations, it is found that the radiation resistance of the present ITO/InP cell is comparable to that of the n/p homojunction InP cell and that both InP cell types have radiation resistance significantly greater than GaAs. The relatively lower radiation resistance, observed at higher fluence, for the InP cell with the deepest junction depth, is attributed to losses in the cells emitter region. Diode parameters obtained from I sub sc - V sub oc plots, data from surface Raman spectroscopy, and determinations of surface conductivity types are used to investigate the configuration of the ITO/InP cells. It is concluded that thesee latter cells are n/p homojunctions, the n-region consisting of a disordered layer at the oxide semiconductor

  13. Radiation tolerance of oxygenated n-strip read-out detectors

    CERN Document Server

    Allport, P P; Greenall, A

    2003-01-01

    Following earlier work on 'oxygenated' detectors in terms of charge collection efficiencies after proton irradiation, full-size detectors for the LHC have been processed with n-side read-out on oxygen enhanced n-type silicon substrates. Two hundred-micron-thick detectors have been inhomogeneously irradiated up to doses of 7 multiplied by 10**1**4p/cm**2 using 24 GeV protons from the CERN PS. Results are presented on the charge collection efficiencies as a function of operating voltage for regions of the detectors irradiated to different doses, using LHC speed analogue read-out electronics. The measurements confirm the expectations which led to our original proposal of such detectors which are now being envisaged for the silicon-based detector systems at the LHC designed to withstand the greatest doses. The possibilities for survival at an upgraded luminosity LHC (Super-LHC) are also briefly discussed.

  14. A cell-surface-anchored ratiometric i-motif sensor for extracellular pH detection.

    Science.gov (United States)

    Ying, Le; Xie, Nuli; Yang, Yanjing; Yang, Xiaohai; Zhou, Qifeng; Yin, Bincheng; Huang, Jin; Wang, Kemin

    2016-06-14

    A FRET-based sensor is anchored on the cell surface through streptavidin-biotin interactions. Due to the excellent properties of the pH-sensitive i-motif structure, the sensor can detect extracellular pH with high sensitivity and excellent reversibility.

  15. Comparison of electrical performances of two n-in-p detectors with different implant type of guard ring by TCAD simulation

    Directory of Open Access Journals (Sweden)

    Mohammed Mekheldi

    Full Text Available This paper presents a preliminary comparative study for two different guard rings structures in the purpose of evaluating their electrical performances. The two structures are based on the n-in-p technology with different implant type of guard rings. I–V characteristics have been simulated using Silvaco/ATLAS software for both structures and compared for various parameters of substrate, guard ring and oxide. Simulation results show that the shape of leakage current is almost the same in all simulations but in terms of breakdown voltage, n-in-p structure with n-type guard rings ensures high voltage stability. Keywords: Breakdown voltage, Guard ring, n-in-p silicon detector, TCAD simulation

  16. First results on the charge collection properties of segmented detectors made with p-type bulk silicon

    International Nuclear Information System (INIS)

    Casse, G.; Allport, P.P.; Bowcock, T.J.V.; Greenall, A.; Hanlon, M.; Jackson, J.N.

    2002-01-01

    Radiation damage of n-type bulk detectors introduces stable defects acting as effective p-type doping and leads to the change of the conductivity type of the silicon substrate (type inversion) after a fluence of a few times 10 13 protons cm -2 . The diode junction after inversion migrates from the original side to the back plane of the detector. The migration of the junction can be prevented using silicon detectors with p-type substrates. Furthermore, the use of n-side readout gives higher charge collection efficiency for segmented devices operated below the full depletion voltage. Large area (∼6.4x6.4 cm 2 ) capacitively coupled 80 μm pitch detectors using polysilicon bias resistors have been fabricated on p-type substrates (n-in-p diode structure). These detectors have been irradiated with 24 GeV/c protons to an integrated fluence of 3x10 14 cm -2 and kept for 7 days at 25 deg. C to reach the broad minimum of the annealing curve. Results are presented on the comparison of their charge collection properties with detectors using p-strip read-out after corresponding dose and annealing

  17. Astrophysical s-factor measurements for 120Te(p,γ)121I and 120Te(p,n)120I reactions

    International Nuclear Information System (INIS)

    Gueray, R. T.; Oezkan, N.; Yalcin, C.; Goerres, J.; DeBoer, R.; Palumbo, A.; Tan, W. P.; Wiescher, M.; Fueloep, Zs.; Somorjai, E.; Lee, H. Y.

    2009-01-01

    Astrophysical S-factors for the 1 20Te(p,γ) 1 21I and 1 20Te(p,n) 1 20I reactions have been measured in the effective center-of-mass energies between 2.47 MeV and 7.93 MeV. Experimental data have been compared with the Hauser-Fesbach statistical model calculations obtained with the model codes NON-SMOKER and TALYS. The discrepancies between the experimental results and calculations can mainly be attributed to the optical model potentials used in the codes.

  18. Characterization of p-CuI prepared by the SILAR technique on Cu-tape/n-CuInS{sub 2} for solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Sankapal, B.R. [Hahn-Meitner-Institut, Glienicker Strasse 100, D-14109, Berlin (Germany)]. E-mail: brsankapal@rediffmail.com; Ennaoui, A. [Hahn-Meitner-Institut, Glienicker Strasse 100, D-14109, Berlin (Germany); Guminskaya, T. [Hahn-Meitner-Institut, Glienicker Strasse 100, D-14109, Berlin (Germany); Dittrich, Th. [Hahn-Meitner-Institut, Glienicker Strasse 100, D-14109, Berlin (Germany); Bohne, W. [Hahn-Meitner-Institut, Glienicker Strasse 100, D-14109, Berlin (Germany); Roehrich, J. [Hahn-Meitner-Institut, Glienicker Strasse 100, D-14109, Berlin (Germany); Strub, E. [Hahn-Meitner-Institut, Glienicker Strasse 100, D-14109, Berlin (Germany); Lux-Steiner, M.Ch. [Hahn-Meitner-Institut, Glienicker Strasse 100, D-14109, Berlin (Germany)

    2005-06-01

    CuI has been synthesized at room temperature on Cu-tape/n-CuInS{sub 2} by using the SILAR technique (successive ionic layer adsorption and reaction). The influence of wet chemical iodine treatment on the CuI has been investigated in more detail. The films were characterized by X-ray diffraction (XRD), transmission electron microscopy (TEM), scanning electron microscopy (SEM), X-ray photoelectron spectroscopy (XPS), elastic recoil detection analysis (ERDA) and surface photovoltage (SPV) techniques. The CuI films contain the no. gammano. -phase of the Zinkblende structure. The crystallites are preferentially oriented in the (111) direction. After wet chemical iodine treatment, the fibrous surface morphology changed to a more dense CuI film with larger crystallites. Oxides could not be detected on the CuI surface. The density of surface states of CIS decreased after the CuI deposition. The importance of the wet chemical iodine treatment for the performance of Cu-tape/n-CuInS{sub 2}/p-CuI solar cells has been demonstrated.

  19. P-type silicon drift detectors

    International Nuclear Information System (INIS)

    Walton, J.T.; Krieger, B.; Krofcheck, D.; O'Donnell, R.; Odyniec, G.; Partlan, M.D.; Wang, N.W.

    1995-06-01

    Preliminary results on 16 CM 2 , position-sensitive silicon drift detectors, fabricated for the first time on p-type silicon substrates, are presented. The detectors were designed, fabricated, and tested recently at LBL and show interesting properties which make them attractive for use in future physics experiments. A pulse count rate of approximately 8 x l0 6 s -1 is demonstrated by the p-type silicon drift detectors. This count rate estimate is derived by measuring simultaneous tracks produced by a laser and photolithographic mask collimator that generates double tracks separated by 50 μm to 1200 μm. A new method of using ion-implanted polysilicon to produce precise valued bias resistors on the silicon drift detectors is also discussed

  20. Characterization and spice simulation of a single-sided, p+ on n silicon microstrip detector before and after low-energy photon irradiation

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, Jiaguo; Klanner, Robert; Fretwurst, Eckhart [Institute for Experimental Physics, Detector Laboratory, University of Hamburg, Hamburg 22761 (Germany)

    2010-07-01

    As preparation for the development of silicon detectors for the harsh radiation environment at the European XFEL (up to 1 GGY 12 keV X-rays) p{sup +} on n silicon microstrip detectors were characterized as function of dose. The measurements, which include dark current, coupling capacitance, interstrip capacitance and interstrip resistance, are compared to a detailed SPICE model, so that the performance for particle detection can be estimated.

  1. Dedicated detectors for surface studies by Moessbauer spectroscopy

    International Nuclear Information System (INIS)

    Bibicu, I.; Rogalski, M.S.; Nicolescu, G.

    2001-01-01

    Moessbauer spectroscopy is a nuclear resonance method largely utilized in solid state studies. Following resonant nuclear absorption, gamma radiations, conversion X-rays, conversion or Auger electrons are emitted. By detection of gamma radiations information about the sample as a whole are obtained while by detection of electrons or X radiation one obtains data on the surface layer. Our laboratory was among the firsts to produce and use flow gas proportional detectors for surface studies by Moessbauer spectroscopy. Four types of detectors were devised: - detectors for electron detection (90% He + 10% CH 4 ); - detectors for conversion X-ray detection (90% Ar + 10% CH 4 ); - detectors for electrons or internal conversion X rays; - detectors for simultaneous detection of electrons and conversion X rays emitted from the same source. All detectors allow simultaneous Moessbauer measurements both for surface and volume for a given sample. Details of construction are presented for the four types of detectors

  2. Technology Development on P-type Silicon Strip Detectors for Proton Beam Dosimetry

    International Nuclear Information System (INIS)

    Aouadi, K.; Bouterfa, M.; Delamare, R.; Flandre, D.; Bertrand, D.; Henry, F.

    2013-06-01

    In this paper, we present a technology for the fabrication of n-in-p silicon strip detectors, which is based on the use of Al 2 O 3 oxide compared to p-spray insulation scheme. This technology has been developed using the best technological parameters deduced from simulations, particularly for the p-spray implantation parameters. Different wafers were processed towards the fabrication of the radiation detectors with p-spray insulation and Al 2 O 3 . The evaluation of the prototype detectors has been carried out by performing the electrical characterization of the devices through the measurement of current-voltage and capacitance-voltage characteristics, as well as the measurement of detection response under radiation. The results of electrical measurements indicate that detectors fabricated with Al 2 O 3 exhibit a dark current several times lower than p-spray detectors and show an excellent electrical insulation between strips with a higher inter-strip resistance. Response of Al 2 O 3 strip detector under radiation has been found better. The resulting improved output signal dynamic range finally makes the use of Al 2 O 3 more attractive. (authors)

  3. Cu(I)/Cu(II) mixed-valence surface complexes of S-[(2-hydroxyamino)-2-oxoethyl]-N,N-dibutyldithiocarbamate: Hydrophobic mechanism to malachite flotation.

    Science.gov (United States)

    Liu, Sheng; Zhong, Hong; Liu, Guangyi; Xu, Zhenghe

    2018-02-15

    Hydroxamate and sulfhydryl surfactants are effective collectors for flotation of copper minerals. The combination application of hydroxamate and sulfhydryl collectors has been proved to be an effective approach for improving the flotation recovery of non-sulfide copper minerals. A surfactant owing both hydroxamate and dithiocarbamate groups might exhibit strong affinity to non-sulfide copper minerals through double sites adsorption, rendering an enhanced hydrophobization to non-sulfide copper minerals flotation. The flotation performance of S-[(2-hydroxyamino)-2-oxoethyl]- N,N-dibutyldithiocarbamate (HABTC) to malachite, calcite and quartz were first evaluated through systematic micro-flotation experiments. HABTC's hydrophobic mechanism to malachite was further investigated and analyzed by zeta potential, Fourier transform infrared spectroscopy (FTIR), time-of-flight secondary ion mass spectrometry (ToF-SIMS) and X-ray photoelectron spectroscopy (XPS). The micro-flotation results demonstrated HABTC was an excellent collector for malachite flotation and exhibited favorable selectivity for flotation separation of malachite from quartz or calcite under pH 8.5-10.3. Zeta potential and FTIR implied that HABTC might bond with the surface copper atoms of malachite, with releasing the H + ions of its hydroxamate group into pulp. ToF-SIMS provided clear evidences that the Cu-hydroxamate and Cu-dithiocarbamate groups were formed on malachite surfaces after HABTC adsorption. XPS revealed that Cu(I)/Cu(II) mixed-valence surface complexes of HABTC anchored on malachite through formation of Cu(I)S and Cu(II)O bonds, accompanying with reduction of partial surface Cu(II) to Cu(I). The Cu(I)/Cu(II) mixed-valence double chelating character and "chair"-shape N,N-dibutyldithiocarbamate hydrophobic group, resulting in an enhanced affinity and hydrophobization of HABTC to malachite flotation. Copyright © 2017 Elsevier Inc. All rights reserved.

  4. The surface detector array of the Telescope Array experiment

    Energy Technology Data Exchange (ETDEWEB)

    Abu-Zayyad, T. [University of Utah, High Energy Astrophysics Institute, Salt Lake City, Utah (United States); Aida, R. [University of Yamanashi, Interdisciplinary Graduate School of Medicine and Engineering, Kofu, Yamanashi (Japan); Allen, M.; Anderson, R. [University of Utah, High Energy Astrophysics Institute, Salt Lake City, Utah (United States); Azuma, R. [Tokyo Institute of Technology, Meguro, Tokyo (Japan); Barcikowski, E.; Belz, J.W.; Bergman, D.R.; Blake, S.A.; Cady, R. [University of Utah, High Energy Astrophysics Institute, Salt Lake City, Utah (United States); Cheon, B.G. [Hanyang University, Seongdong-gu, Seoul (Korea, Republic of); Chiba, J. [Tokyo University of Science, Noda, Chiba (Japan); Chikawa, M. [Kinki University, Higashi Osaka, Osaka (Japan); Cho, E.J. [Hanyang University, Seongdong-gu, Seoul (Korea, Republic of); Cho, W.R. [Yonsei University, Seodaemun-gu, Seoul (Korea, Republic of); Fujii, H. [Institute of Particle and Nuclear Studies, KEK, Tsukuba, Ibaraki (Japan); Fujii, T. [Osaka City University, Osaka, Osaka (Japan); Fukuda, T. [Tokyo Institute of Technology, Meguro, Tokyo (Japan); Fukushima, M. [Institute for Cosmic Ray Research, University of Tokyo, Kashiwa, Chiba (Japan); University of Tokyo, Institute for the Physics and Mathematics of the Universe, Kashiwa, Chiba (Japan); Gorbunov, D. [Institute for Nuclear Research of the Russian Academy of Sciences, Moscow (Russian Federation); and others

    2012-10-11

    The Telescope Array (TA) experiment, located in the western desert of Utah, USA, is designed for the observation of extensive air showers from extremely high energy cosmic rays. The experiment has a surface detector array surrounded by three fluorescence detectors to enable simultaneous detection of shower particles at ground level and fluorescence photons along the shower track. The TA surface detectors and fluorescence detectors started full hybrid observation in March, 2008. In this article we describe the design and technical features of the TA surface detector.

  5. The surface detector array of the Telescope Array experiment

    International Nuclear Information System (INIS)

    Abu-Zayyad, T.; Aida, R.; Allen, M.; Anderson, R.; Azuma, R.; Barcikowski, E.; Belz, J.W.; Bergman, D.R.; Blake, S.A.; Cady, R.; Cheon, B.G.; Chiba, J.; Chikawa, M.; Cho, E.J.; Cho, W.R.; Fujii, H.; Fujii, T.; Fukuda, T.; Fukushima, M.; Gorbunov, D.

    2012-01-01

    The Telescope Array (TA) experiment, located in the western desert of Utah, USA, is designed for the observation of extensive air showers from extremely high energy cosmic rays. The experiment has a surface detector array surrounded by three fluorescence detectors to enable simultaneous detection of shower particles at ground level and fluorescence photons along the shower track. The TA surface detectors and fluorescence detectors started full hybrid observation in March, 2008. In this article we describe the design and technical features of the TA surface detector.

  6. Measurements of the Fe-54 (n,p) Mn-54 Reaction Cross Section in the Neutron Energy Range 2.3-3.8 MeV

    International Nuclear Information System (INIS)

    Lauber, A.; Malmskog, S.

    1964-10-01

    We have measured the 54 Fe (n, p) 54 Mn reaction cross section using a surface barrier detector to record the number of protons released in the reaction. The neutron flux was determined by means of a hydrogenous radiator, detecting the scattered protons with the solid state detector, and calculating the number of impinging neutrons from the well known n-p scattering cross section. The 54 Fe (n, p) 54 Mn reaction cross section is found to increase from 25 mb at 2.3 MeV to 208 mb at 3.5 MeV

  7. Fabrication of detectors and transistors on high-resistivity silicon

    International Nuclear Information System (INIS)

    Holland, S.

    1988-06-01

    A new process for the fabrication of silicon p-i-n diode radiation detectors is described. The utilization of backside gettering in the fabrication process results in the actual physical removal of detrimental impurities from critical device regions. This reduces the sensitivity of detector properties to processing variables while yielding low diode reverse-leakage currents. In addition, gettering permits the use of processing temperatures compatible with integrated-circuit fabrication. P-channel MOSFETs and silicon p-i-n diodes have been fabricated simultaneously on 10 kΩ/centerreverse arrowdot/cm silicon using conventional integrated-circuit processing techniques. 25 refs., 5 figs

  8. Efficiency of a concentric matrix track detector surface scanning

    International Nuclear Information System (INIS)

    Bek-Uzarov, Dj.; Nikezic, D.; Kostic, D.; Krstic, D.; Cuknic, O.

    1995-01-01

    Heavy particle ionizing radiation track counting on the surface of a solid state round surface detector is made using the microscope and scanning step by step by a round field of vision. The whole solid state detector surface could not be fully or completely covered by round fields of visions. Therefore detector surface could be divided on the two parts, the larger surface, being under fields of vision, really scanned and no scanned missed or omitted surface. The ratio between omitted and scanned surfaces is so called track scanning efficiency. The knowledge of really counted, or scanned surface is a important value for evaluating the real surface track density an exposed solid state track detector. In the paper a matrix of a concentric field of vision made around the first microscope field of vision placed in center of the round disc of the scanned track detector is proposed. In a such scanning matrix the real scanned surface could be easy calculated and by the microscope scanning made as well. By this way scanned surface is very precisely obtained as well. Precise knowledge of scanned and omitted surface allows to obtain more precise scanning efficiency factor as well as real surface track density, the main parameter in solid state track detection measurements. (author)

  9. Delayed charge recovery discrimination of passivated surface alpha events in P-type point-contact detectors

    Science.gov (United States)

    Gruszko, J.; Majorana Collaboration

    2017-09-01

    The Majorana Demonstrator searches for neutrinoless double-beta decay of 76Ge using arrays of high-purity germanium detectors. If observed, this process would demonstrate that lepton number is not a conserved quantity in nature, with implications for grand-unification and for explaining the predominance of matter over antimatter in the universe. A problematic background in such large granular detector arrays is posed by alpha particles. In the Majorana Demonstrator, events have been observed that are consistent with energy-degraded alphas originating on the passivated surface, leading to a potential background contribution in the region-of-interest for neutrinoless double-beta decay. However, it is also observed that when energy deposition occurs very close to the passivated surface, charges drift through the bulk onto that surface, and then drift along it with greatly reduced mobility. This leads to both a reduced prompt signal and a measurable change in slope of the tail of a recorded pulse. In this contribution we discuss the characteristics of these events and the development of a filter that can identify the occurrence of this delayed charge recovery, allowing for the efficient rejection of passivated surface alpha events in analysis.

  10. Cerebral dynamics of N-isopropyl-(123I)p-iodoamphetamine

    International Nuclear Information System (INIS)

    Creutzig, H.; Schober, O.; Gielow, P.; Friedrich, R.; Becker, H.; Dietz, H.; Hundeshagen, H.

    1986-01-01

    Temporal changes in the distribution of N-isopropyl-(123I)p-iodoamphetamine (IMP) within the brain are measured with serial tomographic imaging. In the cerebellum there is a decrease in activity of 42% from the early [15-45 min postinjection (p.i.)] to the late (210-240 min p.i.) scan, while in the cortex the decrease is 18%, and in the basal ganglia there is no decrease within this time. In brain tumors there was no IMP uptake in the early as well as in the late scans, regardless of tumor type, perfusion rate, or blood-brain barrier dysfunction. In 11 of 43 patients with a cerebral infarction a real increase of 123I activity (mean +21%) was seen in the late images. This ''filling in'' phenomena might be useful in selecting patients for bypass surgery. In these patients the diaschisis cerebelli, seen in the early scans, disappeared in the late images. The regional distribution of IMP changes with time; spatial ratios might be blurred by temporal changes. High-flow areas such as visio-auditory centers can be delineated clearly after stimulation in fast early scans; in these areas the pharmacokinetics of 123I are different from other cortex regions. To get the full information from the IMP brain uptake, both spatial and temporal variation must be measured

  11. Silicon drift detectors coupled to CsI(Tl) scintillators for spaceborne gamma-ray detectors

    International Nuclear Information System (INIS)

    Marisaldi, M.; Fiorini, C.; Labanti, C.; Longoni, A.; Perotti, F.; Rossi, E.; Soltau, H.

    2006-01-01

    Silicon Drift Detectors (SDDs), thanks to their peculiar low noise characteristics, have proven to be excellent photodetectors for CsI(Tl) scintillation light detection. Two basic detector configurations have been developed: either a single SDD or a monolithic array of SDDs coupled to a single CsI(Tl) crystal. A 16 independent detectors prototype is under construction, designed to work in conjunction with the MEGA Compton telescope prototype under development at MPE, Garching, Germany. A single SDD coupled to a CsI(Tl) crystal has also been tested as a monolithic detector with an extended energy range between 1.5 keV and 1 MeV. The SDD is used as a direct X-ray detector for low energy photons interacting in silicon and as a scintillation light photodetector for photons interacting in the crystal. The type of interaction is identified by means of pulse shape discrimination technique. Detectors based on an array of SDDs coupled to a single CsI(Tl) crystal have also been built. The readout of these detectors is based on the Anger camera technique, and submillimeter spatial resolution can be achieved. The two detectors' approaches and their applications will be described

  12. Simulation of new p-type strip detectors with trench to enhance the charge multiplication effect in the n-type electrodes

    International Nuclear Information System (INIS)

    Fernández-Martínez, P.; Pellegrini, G.; Balbuena, J.P.; Quirion, D.; Hidalgo, S.; Flores, D.; Lozano, M.; Casse, G.

    2011-01-01

    This paper shows the simulation results of new p-type strip detectors with trench electrodes to enhance the charge multiplication effect in the irradiated detector. The new design includes baby microstrip detectors (area=1 cm 2 ) with a strip pitch of 80 μm and p-stop isolation structures. The strip has a 5 μm-wide trench along all its length, filled and doped with polysilicon to create a deep N + contact into the material bulk. The trench depth can be varied in order to study the influence of the electric field on the charge multiplication effect in heavily irradiated samples. Some alternative designs have also been studied to establish a comparison between various structures using different technologies. Simulation reproduce the electrical behaviour under different irradiation conditions, taking into account the damage accumulated after irradiation with neutrons and protons with several fluence values. The investigation of these effects provides important indications on the ability of this modified electrode geometry to control and optimise the charge multiplication effect, in order to fully recover the collection efficiency of heavily irradiated microstrip detectors, at reasonable bias voltage compatible with the voltage feed limitation of the CERN SLHC experiments.

  13. Charged particle discrimination with silicon surface barrier detectors

    International Nuclear Information System (INIS)

    Coote, G.E.; Pithie, J.; Vickridge, I.C.

    1996-01-01

    The application for materials analysis of nuclear reactions that give rise to charged particles is a powerful surface analytical and concentration depth profiling technique. Spectra of charged particles, with energies in the range 0.1 to 15 MeV, emitted from materials irradiated with beams of light nuclei such as deuterons are measured with silicon surface barrier detectors. The spectra from multi-elemental materials typically encountered in materials research are usually composed of an overlapping superposition of proton, alpha, and other charged particle spectra. Interpretation of such complex spectra would be simplified if a means were available to electronically discriminate between the detector response to the different kinds of charged particle. We have investigated two methods of discriminating between different types of charged particles. The fast charge pulses from a surface barrier detector have different shapes, depending on the spatial distribution of energy deposition of the incident particle. Fast digitisation of the pulses, followed by digital signal processing provides one avenue for discrimination. A second approach is to use a thin transmission detector in front of a thick detector as a detector telescope. For a given incident energy, different types of charged particles will lose different amounts of energy in the thin detector, providing an alternative means of discrimination. We show that both approaches can provide significant simplification in the interpretation of charged particle spectra in practical situations, and suggest that silicon surface barrier detectors having graded electronic properties could provide improved discrimination compared to the current generation of detectors having homogeneous electronic properties. (author).12 refs., 2 tabs., 28 figs

  14. Evaluation of the (n,p) and (n,np) reactions of the isotopes of titanium for ENDF/B-IV

    International Nuclear Information System (INIS)

    Magurno, B.A.

    1975-01-01

    Threshold detectors generally use elemental titanium rather than isotopically enriched samples necessitating the evaluation of all the (n,p), (n,np), and (n,d) reactions of the major contributing isotopes separately. 49 Ti and 50 Ti are not dealt with here since they are both approximately 5 percent abundant and have small cross sections. The (n,np), (n,pn) and (n,d) reactions are lumped together and called (n,np). The energy range is divided into three regions. Region I is that of threshold to 7 MeV, Region II, 7 to 12 MeV and Region III, 12 to 20 MeV

  15. The influence of fast neutron irradiation on the noise properties of silicon surface-barrier detectors

    International Nuclear Information System (INIS)

    Dabrowski, W.; Korbel, K.

    1988-01-01

    The susceptibility to the fast neutron irradiation of silicon surface-barrier detectors has been investigated. It was shown that the 1/f-noise decreases substantially with increasing fluence in the range from 10 10 n/cm 2 to 10 11 n/cm 2 . The deterioration of the detector performance is caused mainly by the positively-charged defects induced by the radiation. The critical value of the neutron fluence, at which the detector performance begins to be worsened was also determined. 5 refs., 5 figs. (author)

  16. Measurements of the Fe-54 (n,p) Mn-54 Reaction Cross Section in the Neutron Energy Range 2.3-3.8 MeV

    Energy Technology Data Exchange (ETDEWEB)

    Lauber, A; Malmskog, S

    1964-10-15

    We have measured the {sup 54}Fe (n, p) {sup 54}Mn reaction cross section using a surface barrier detector to record the number of protons released in the reaction. The neutron flux was determined by means of a hydrogenous radiator, detecting the scattered protons with the solid state detector, and calculating the number of impinging neutrons from the well known n-p scattering cross section. The {sup 54}Fe (n, p) {sup 54}Mn reaction cross section is found to increase from 25 mb at 2.3 MeV to 208 mb at 3.5 MeV.

  17. Manufacturing P-N junctions in germanium bodies

    International Nuclear Information System (INIS)

    Hall, R.N.

    1980-01-01

    A method of producing p-n junctions in Ge so as to facilitate their use as radiation detectors involves forming a body of high purity p-type germanium, diffusing lithium deep into the body, in the absence of electrolytic processes, to form a junction between n-type and p-type germanium greater than 1 mm depth. (UK)

  18. Pulse shape discrimination studies of Phase I Ge-detectors

    Energy Technology Data Exchange (ETDEWEB)

    Kirsch, Andrea [MPI fuer Kernphysik, Saupfercheckweg 1, 69117 Heidelberg (Germany); Collaboration: GERDA-Collaboration

    2013-07-01

    The GERmanium Detector Array experiment aims to search for the neutrinoless double beta decay (0νββ) of {sup 76}Ge by using isotopically enriched germanium crystals as source and detector simultaneously. The bare semiconductor diodes are operated in liquid argon at cryogenic temperatures in an ultra-low background environment. In addition, Gerda applies different active background reduction techniques, one of which is pulse shape discrimination studies of the current Phase I germanium detectors. The analysis of the signal time structure provides an important tool to distinguish single site events (SSE) of the ββ-decay from multi site events (MSE) of common gamma-ray background or surface events. To investigate the correlation between the signal shape and the interaction position, a new, also to the predominantly deployed closed-ended coaxial HPGe detectors applicable analysis technique has been developed. A summary of the used electronic/detector assembly is given and followed by a discussion of the performed classification procedure by means of accurate pulse shape simulations of 0νββ-like signals. Finally, the obtained results are presented along with an evaluation of the relevance for the Gerda experiment.

  19. Recombination of charge carriers in the GaAs-based p-i-n diode

    International Nuclear Information System (INIS)

    Ayzenshtat, G. I.; Yushenko, A. Y.; Gushchin, S. M.; Dmitriev, D. V.; Zhuravlev, K. S.; Toropov, A. I.

    2010-01-01

    It is established that the radiative recombination of charge carriers plays a substantial role in the GaAs-based p-i-n diodes at high densities of the forward current. It is shown experimentally that the diodes operating in microwave integrated circuits intensely emit light in the IR range with wavelengths from 890 to 910 nm. The obtained results indicate the necessity of taking into account the features of recombination processes in the GaAs-based microwave p-i-n diodes.

  20. Fast CsI-phoswich detector

    International Nuclear Information System (INIS)

    Langenbrunner, J.R.

    1996-01-01

    An improved phoswich radiation detector used pure CsI crystal and a fast plastic scintillator and a single photomultiplier tube. The plastic is arranged to receive incident radiation, and that which passed through then strikes the CsI crystal. Scintillation light from both the plastic and CsI crystal are applied to the photomultiplier tube, with the light from the plastic passing through the crystal without absorption therein. Electronics are provided for analyzing the output of the photomultiplier tube to discriminate responses due to the plastic and the CsI crystal, through short gate and long gate integration, to produce results which are indicative of the characteristics of the different types of incident radiation, even in the presence of large amounts of radiation. The phoswich detector has excellent timing resolution. The scintillators of the CsI- phoswich were chosen for their fast risetimes, of about 3 ns for NE102A, and 30 ns for the pure CsI. 5 figs

  1. Characterization of Lateral Structure of the p-i-n Diode for Thin-Film Silicon Solar Cell.

    Science.gov (United States)

    Kiaee, Zohreh; Joo, Seung Ki

    2018-03-01

    The lateral structure of the p-i-n diode was characterized for thin-film silicon solar cell application. The structure can benefit from a wide intrinsic layer, which can improve efficiency without increasing cell thickness. Compared with conventional thin-film p-i-n cells, the p-i-n diode lateral structure exploited direct light irradiation on the absorber layer, one-side contact, and bifacial irradiation. Considering the effect of different carrier lifetimes and recombinations, we calculated efficiency parameters by using a commercially available simulation program as a function of intrinsic layer width, as well as the distance between p/i or n/i junctions to contacts. We then obtained excellent parameter values of 706.52 mV open-circuit voltage, 24.16 mA/Cm2 short-circuit current, 82.66% fill factor, and 14.11% efficiency from a lateral cell (thickness = 3 μm; intrinsic layer width = 53 μm) in monofacial irradiation mode (i.e., only sunlight from the front side was considered). Simulation results of the cell without using rear-side reflector in bifacial irradiation mode showed 11.26% front and 9.72% rear efficiencies. Our findings confirmed that the laterally structured p-i-n cell can be a potentially powerful means for producing highly efficient, thin-film silicon solar cells.

  2. Simulation for spectral response of solar-blind AlGaN based p-i-n photodiodes

    Science.gov (United States)

    Xue, Shiwei; Xu, Jintong; Li, Xiangyang

    2015-04-01

    In this article, we introduced how to build a physical model of refer to the device structure and parameters. Simulations for solar-blind AlGaN based p-i-n photodiodes spectral characteristics were conducted in use of Silvaco TCAD, where device structure and parameters are comprehensively considered. In simulation, the effects of polarization, Urbach tail, mobility, saturated velocities and lifetime in AlGaN device was considered. Especially, we focused on how the concentration-dependent Shockley-Read-Hall (SRH) recombination model affects simulation results. By simulating, we analyzed the effects in spectral response caused by TAUN0 and TAUP0, and got the values of TAUN0 and TAUP0 which can bring a result coincides with test results. After that, we changed their values and made the simulation results especially the part under 255 nm performed better. In conclusion, the spectral response between 200 nm and 320 nm of solar-blind AlGaN based p-i-n photodiodes were simulated and compared with test results. We also found that TAUN0 and TAUP0 have a large impact on spectral response of AlGaN material.

  3. nBn Infrared Detector Containing Graded Absorption Layer

    Science.gov (United States)

    Gunapala, Sarath D.; Ting, David Z.; Hill, Cory J.; Bandara, Sumith V.

    2009-01-01

    It has been proposed to modify the basic structure of an nBn infrared photodetector so that a plain electron-donor- type (n-type) semiconductor contact layer would be replaced by a graded n-type III V alloy semiconductor layer (i.e., ternary or quarternary) with appropriate doping gradient. The abbreviation nBn refers to one aspect of the unmodified basic device structure: There is an electron-barrier ("B" ) layer between two n-type ("n" ) layers, as shown in the upper part of the figure. One of the n-type layers is the aforementioned photon-absorption layer; the other n-type layer, denoted the contact layer, collects the photocurrent. The basic unmodified device structure utilizes minority-charge-carrier conduction, such that, for reasons too complex to explain within the space available for this article, the dark current at a given temperature can be orders of magnitude lower (and, consequently, signal-to-noise ratios can be greater) than in infrared detectors of other types. Thus, to obtain a given level of performance, less cooling (and, consequently, less cooling equipment and less cooling power) is needed. [In principle, one could obtain the same advantages by means of a structure that would be called pBp because it would include a barrier layer between two electron-acceptor- type (p-type) layers.] The proposed modifications could make it practical to utilize nBn photodetectors in conjunction with readily available, compact thermoelectric coolers in diverse infrared- imaging applications that could include planetary exploration, industrial quality control, monitoring pollution, firefighting, law enforcement, and medical diagnosis.

  4. THz detectors using surface Josephson plasma waves in layered superconductors

    International Nuclear Information System (INIS)

    Savel'ev, Sergey; Yampol'skii, Valery; Nori, Franco

    2006-01-01

    We describe a proposal for THz detectors based on the excitation of surface waves, in layered superconductors, at frequencies lower than the Josephson plasma frequency ω J . These waves propagate along the vacuum-superconductor interface and are attenuated in both transverse directions out of the surface (i.e., towards the superconductor and towards the vacuum). The surface Josephson plasma waves are also important for the complete suppression of the specular reflection from a sample (Wood's anomalies, used for gratings) and produce a huge enhancement of the wave absorption, which can be used for the detection of THz waves

  5. N-isopropyl-123I-p-iodoamphetamine uptake mechanism in the lung - is it dependent on pH, lipophilicity or pKa?

    International Nuclear Information System (INIS)

    Akber, S.F.

    1991-01-01

    The uptake and binding mechanism of biogenic amines in the lungs has been studied extensively with no conclusive results. The competition between N-isopropyl- 123 I-p-iodo amphetamines ( 123 I-IMP) and propranolol and 123 I-IMP and ketamine, in the lungs suggest that the pK a value of the biogenic amines has a significant role to play in the mechanism of uptake and retention of biogenic amines in the lungs. (orig.) [de

  6. Analysis of the surface technology of silicon detectors for imaging of low-energy beta tracers in biological material

    CERN Document Server

    Tykva, R

    2000-01-01

    Using silicon surface barrier detectors, the counting sensitivity of low-energy beta tracers is considerably influenced by surface technology applied in detector manufacturing. Original diagnostic procedure, using a mixture of uranium fission products, is described to trace the behaviors of different admixtures as in the etching bath as in the water used during development of the detector surface. In combination with some other described analyses, the detectors produced with the developed surface control are used in a PC - controlled scanning equipment reaching at room temperature an FWHM of 3.4 keV for sup 2 sup 4 sup 1 Am. Such detectors make it possible to image distribution, of e.g., sup 3 H, sup 1 sup 2 sup 5 I, sup 3 H+ sup 1 sup 4 C and other beta tracer combinations applied in life and environmental sciences.

  7. Silicon P.I.N. Junctions used for studies of radiation damage; Etude de l'irradiation aux neutrons rapides du silicium au moyen de jonctions P.I.N

    Energy Technology Data Exchange (ETDEWEB)

    Lanore, J [Commissariat a l' Energie Atomique, Fontenay-aux-Roses (France). Centre d' Etudes Nucleaires

    1964-06-01

    Irradiation of silicon P.I.N. junction has been studied primarily for the purpose of developing a radiation damage dosimeter, but also for the purpose of investigating silicon itself. It is known that the rate of recombination of electrons and holes is a linear function of defects introduced by neutron irradiation. Two methods have been used to measure that rate of recombination: forward characteristic measurements, recovery time measurements. In order to explain how these two parameters depend on recombination rate we have given a theory of the P.I.N. junction. We have also given an idea of the carrier lifetime dependence versus temperature. Annealing effects in the range of 70 to 700 K have also been studied, we found five annealing stages with corresponding activation energies. As an application for these studies, we developed a radiation damage dosimeter with which we made several experiments in facilities such as Naiade or Marias. (author) [French] L'irradiation de structures P.I.N. etait faite dans le but d'etudier principalement la mise au point d'un dosimetre a ''radiation damage'' et aussi pour etudier plus profondement le silicium lui-meme. On sait que le taux de recombinaison electrons-trous est une fonction lineaire du taux de defauts introduits par irradiation aux neutrons. Deux methodes ont ete utilisees pour atteindre ce taux de recombinaison: mesures de la caracteristique directe, mesures du temps de retournement. Pour expliquer de quelle facon ces parametres dependent du taux de recombinaison. Nous avons donne une theorie de la jonction P.I.N. Nous avons aussi donne l'allure des variations du temps de vie des porteurs en fonction de la temperature. Nous avons d'autre part effectue des recuits entre 70 et 700 K, domaine dans lequel nous avons trouve cinq etapes de ''guerison'' avec les energies d'activation correspondantes. En application de ces etudes nous avons mis ou point un dosimetre a ''radiation damage'' avec lequel nous avons effectue des

  8. Fabrication of radiation detector using PbI2 crystals

    International Nuclear Information System (INIS)

    Shoji, T.; Ohba, K.; Suehiro, T.; Hiratate, Y.

    1995-01-01

    Radiation detectors have been fabricated from lead iodide (PbI 2 ) crystals grown by two methods: zone melting and Bridgman methods. In response characteristics of the detector fabricated from crystals grown by the zone melting method, a photopeak for γ-rays from an 241 Am source (59.5 KeV) has been clearly observed with applied detector bias of 500 V at room temperature. The hole drift mobility is estimated to be about 5.5 cm 2 /Vs from measurement of pulse rise time for 5.48 MeV α-rays from 241 Am. By comparing the detector bias versus saturated peak position of the PbI 2 detector with that of CdTe detector, the average energy for producing electron-hole pairs is estimated to be about 8.4 eV for the PbI 2 crystal. A radiation detector fabricated from PbI 2 crystals grown by the Bridgman method, however, exhibited no response for γ-rays

  9. Investigation of series resistance and surface states in Au/n - GaP structures

    International Nuclear Information System (INIS)

    Kiymaz, A.; Onal, B.; Ozer, M.; Acar, S.

    2009-01-01

    The variation in series resistance and surface state density of Au/n - GaP Schottky diodes have been systematically investigated at room temperature by using capacitance-voltage C-V and conductance-voltage G/w-V measurements techniques. The C-V and G/w-V characteristics of these devices were investigated by considering series resistance effects in a wide frequency range. It is shown that the capacitance of the Au/n - GaP Schottky diode decreases with increasing frequency. It is assumed that the surface states were responsible for this behaviour. The distribution profile of Rs-V gives a peak in the depletion region at low frequencies and disappears with increasing frequencies

  10. Mercuric iodide semiconductor detectors encapsulated in polymeric resin

    Energy Technology Data Exchange (ETDEWEB)

    Martins, Joao F. Trencher; Santos, Robinson A. dos; Ferraz, Caue de M.; Oliveira, Adriano S.; Velo, Alexandre F.; Mesquita, Carlos H. de; Hamada, Margarida M., E-mail: mmhamada@ipen.br [Instituto de Pesquisas Energeticas e Nucleares (IPEN/CNEN-SP), Sao Paulo, SP (Brazil); Disch, Christian; Fiederle, Michael [Albert-Ludwigs Universität Freiburg - UniFreibrug, Freiburg Materials Research Center - FMF, Freiburg (Germany)

    2015-07-01

    The development of new semiconductor radiation detectors always finds many setback factors, such as: high concentration of impurities in the start materials, poor long term stability, the surface oxidation and other difficulties discussed extensively in the literature, that limit their use. In this work was studied, the application of a coating resin on HgI2 detectors, in order to protect the semiconductor crystal reactions from atmospheric gases and to isolate electrically the surface of the crystals. Four polymeric resins were analyzed: Resin 1: 50% - 100%Heptane, 10% - 25% methylcyclohexane, <1% cyclohexane; Resin 2: 25% - 50% ethanol, 25% - 50% acetone, <2,5% ethylacetate; Resin 3: 50% - 100% methylacetate, 5% - 10% n-butylacetate; Resin 4: 50% - 100% ethyl-2-cyanacrylat. The influence of the polymeric resin type used on the spectroscopic performance of the HgI{sub 2} semiconductor detector is, clearly, demonstrated. The better result was found for the detector encapsulated with Resin 3. An increase of up to 26 times at the stability time was observed for the detectors encapsulated compared to that non-encapsulated detector. (author)

  11. Effects of bulk and surface conductivity on the performance of CdZnTe pixel detectors

    DEFF Research Database (Denmark)

    Bolotnikov, A.E.; Chen, C.M.H.; Cook, W.R.

    2002-01-01

    , the existence of a thin (10-100 A) oxide layer on the surface of CZT, formed during the fabrication process, affects both bulk and surface leakage currents. We demonstrate that the measured I-V dependencies of bulk current can be explained by considering the CZT detector as a metal-semiconductor-metal system......-collection efficiency in detectors with multicontact geometry; some fraction of the electric field lines that originated on the cathode intersects the surface areas between the pixel contacts where the charge produced by an ionizing particle gets trapped. To overcome this effect, we place a grid of thin electrodes...

  12. Waveguide photonic crystals with characteristics controlled with p-i-n diodes

    International Nuclear Information System (INIS)

    Usanov, D. A.; Skripal, A. V.; Abramov, A. V.; Bogolyubov, A. S.; Skvortsov, V. S.; Merdanov, M. K.

    2010-01-01

    A one-dimensional waveguide photonic structure-specifically, a photonic crystal with a controllable frequency characteristic-is designed. The central frequency of the spectral window of the photonic crystal can be tuned by choosing the parameters of disturbance of periodicity in the photonic crystal, whereas the transmission coefficient at a particular frequency can be controlled by varying the voltage at a p-i-n diode. It is shown that the possibility exists of using the waveguide photonic crystal to design a microwave device operating in the 3-cm-wavelength region, with a transmission band of 70 MHz at a level 3 dB and the transmission coefficient controllable in the range from -1.5 to -25 dB under variations in the forward voltage bias at the p-i-n diode from zero to 700 mV.

  13. N-limited or N and P co-limited indications in the surface waters of three Mediterranean basins

    Science.gov (United States)

    Tanaka, T.; Thingstad, T. F.; Christaki, U.; Colombet, J.; Cornet-Barthaux, V.; Courties, C.; Grattepanche, J.-D.; Lagaria, A.; Nedoma, J.; Oriol, L.; Psarra, S.; Pujo-Pay, M.; van Wambeke, F.

    2010-11-01

    The limiting nutrient for the pelagic microbial food web in the Mediterranean Sea was investigated in the nutrient manipulated microcosms during summer 2008. Surface waters were collected into 12 carboys at a center of anticyclonic eddy at the Western Basin, the Ionian Basin, and the Levantine Basin, respectively. As compared to the Redfield ratio, the ratio of N to P in the collected waters was always smaller in the dissolved inorganic fraction but higher in both dissolved and particulate organic fractions. Four different treatments in triplicates (addition of ammonium, phosphate, a combination of both, and the unamended control) were set up for the carboys. Responses of chemical and biological parameters in these different treatments were measured during the incubation (3-4 days). Temporal changes of turnover time of phosphate and ATP, and alkaline phosphatase activity during the incubation suggested that the phytoplankton and heterotrophic prokaryotes (Hprok) communities were not purely P-limited at any studied stations. Statistical comparison between the treatments for a given parameter measured at the end of the incubation did not find pure P-limitation in any chemical and biological parameters at three study sites. Primary production was consistently limited by N, and Hprok growth was not limited by N nor P in the Western Basin, but N-limited in the Ionian Basin, and N and P co-limited in the Levantine Basin. Our results demonstrated the gap between biogeochemical features and biological responses in terms of the limiting nutrient. We question the general notion that Mediterranean surface waters are limited by P alone during the stratified period.

  14. Brain perfusion image using N-isopropyl-p-[123I] iodoamphetamine

    International Nuclear Information System (INIS)

    Matsuda, Hiroshi; Seki, Hiroyasu; Ishida, Hiroko

    1984-01-01

    In brain perfusion images using N-Isopropyl-p-[ 123 I] Iodoamphetamine and rotating gamma camera emission computed tomography, brain maps showing laterality indices (LI) were made for the purpose of detecting ineterhemispheric differences. Left (L) and right (R) leteral images were made by adding sagittal section images in each hemisphere, respectively. LI was calculated as follows. LI=100(1+(R-L)/(R+L)). The normal ranges (mean+-2 s.d.) of the indices determined by those obtained in five normal right-handed subjects were 103+-4 and 103+-10 for brain mean and each pixel, respectively. Out of 25 measurements in 22 righthanded patients with cerebrovascular accidents, brain mean LI beyond the normal limits and areas showing abnormal regional LI were observed in 5 (20%) and 21 (84%) measurements, respectively. On the other hand, X-ray CT showed low density areas in only 12 (48%). These brain maps were clinically useful for detecting and quantifying interhemispheric differences in brain perfusion images with N-Isopropyl-p-[ 123 I] Iodoamphetamine. (author)

  15. A study on regional cerebral blood flow measurement by N-isopropyl-p-[I-123]iodoamphetamine

    International Nuclear Information System (INIS)

    Seki, Hiroyasu

    1986-01-01

    In vivo characteristics of N-isopropyl-p-[I-123]iodoamphetamine (I-123 IMP) as a potential agent for imaging regional cerebral blood flow (rCBF) were fundamentally studied, and the clinical value of gamma camera rotating SPECT with I-123 IMP was assessed. Brain autoradiography in rats revealed that brain uptake of I-123 IMP is comparable to that described for C-14 iodoantipyrin. In a healthy volunteer, brain uptake was 8.5 % of injected dose at 1.5 hr. Significant uptake of I-123 IMP was observed in the lungs and liver, but not observed in the eyeball or pancreas. Radiation absorbed doses per mCi of I-123 IMP were 0.142 in the brain, 0.178 in the lungs, 0.130 in the liver, 0.038 in the ovaries, 0.027 in the testes, and 0.042 in the total body. A rotating gamma camera for SPECT gave the same linear response to radioactivity as a ring detector, although the latter had better sensitivity and resolution than the former. An increased rCBF was observed with physiological stimulation including left hand movement, reading, and listening, providing three-dimensional mapping of regional cerebral function for kinesthesia. Fifty-three measurements of rCBF were clinically acquired in 42 patients with cerebrovascular disorder. Mean rCBF ranged from 11 to 40 ml/100 g/min. SPECT with I-123 IMP had a significantly high ability to detect ischemic lesions compared with X-ray CT (83 % vs. 41 %). These results indicate the potential benefits of this modality in evaluating cerebral pathophysiology, treatment efficacy, and surgical indications. (Namekawa, K.)

  16. Fabrication of Au_n_a_n_o_p_a_r_t_i_c_l_e@mSiO_2@Y_2O_3:Eu nanocomposites with enhanced fluorescence

    International Nuclear Information System (INIS)

    Li, Huiqin; Kang, Jianmiao; Yang, Jianhui; Wu, Biao

    2016-01-01

    Herein, Au_n_a_n_o_p_a_r_t_i_c_l_e@mSiO_2@Y_2O_3:Eu nanocomposites are synthesized through layer-by-layer assembly technology. Au_n_a_n_o_p_a_r_t_i_c_l_e@mSiO_2 core–shell nanospheres were prepared at first in the presence of CTAB in aqueous solution system by the modified one-pot method. A chemical precipitation method and a succeeding calcination process were adopted to the growth of Y_2O_3:Eu shells on the surfaces of Au_n_a_n_o_p_a_r_t_i_c_l_e@mSiO_2 core–shell nanospheres. The structure, morphology and composition of the nanocomposites were confirmed by XRD, TEM and UV–vis absorption spectrum. The prepared Au_n_a_n_o_p_a_r_t_i_c_l_e@mSiO_2@Y_2O_3:Eu nanocomposites have showed the emission intensity enhances to 6.23 times at 30 nm thickness of the silica spacer between the core of Au nanoparticle and the shell of Y_2O_3:Eu. According to the observations of fluorescent lifetime and the modeling of local electric field, the metal-enhanced and quenched fluorescence is closely related with the enhancement of excitation and radiative decay rate and the quenching by NRET comes as a result of competition between the distance-dependent mechanisms. This kind of multifunctional inorganic material will be widely used in electronics, biology and medical drug loading, etc. - Highlights: • Fabrication of Au_n_a_n_o_p_a_r_t_i_c_l_e@mSiO_2@Y_2O_3:Eu nanocomposites with core-spacer-shell structure. • The controllable fluorescence is achieved by adjusting the spacer thickness of silica. • The fluorescence enhancement is 6.23-fold at an optimal spacer thickness about 30 nm. • The metal-enhanced fluorescence mechanism is proposed.

  17. Compact CsI(Tl)-PIN detectors for nuclear physics applications

    International Nuclear Information System (INIS)

    Bhattacharjee, T.; Basu, S.K.; Bhattacharyya, S.; Chanda, S.; Chowdhury, A.; Mukhopadhyay, P.; Chatterjee, M.B.; Dey, C.C.; Mukherjee, Anjali

    2005-01-01

    Prototype detector elements, based on CsI(Tl) - Si PIN diodes, have been fabricated and optimized for use in a near 4p charged particle multiplicity filter array. The important aspects of fabrication of such compact detector elements along with the off-line and on-line performance test results will be reported. An early implementation of the proposed multiplicity filter array will be described. The planned use of the array in conjunction with the Indian National Gamma Array (INGA) as a reaction filter in high spin spectroscopic studies would be stressed. (author)

  18. Plasma measurements with surface barrier detectors

    International Nuclear Information System (INIS)

    Futch, A.H. Jr.; Bradley, A.E.

    1969-01-01

    A surface barrier detector system for measuring the loss rate of protons from a hydrogen plasma and their energy spectrum is described. A full width at half maximum (FWHM) resolution of 1.4 keV for 15-keV hydrogen atoms was obtained using a selected detector having a sensitive area of 3 mm 2 and a depletion depth of 700 microns

  19. Läget i berggrummet : En kvalitativ undersökning av inverkande faktorer i arbetsmiljön på en byggarbetsplats i ett bergrum

    OpenAIRE

    Miladi, Lubna

    2014-01-01

    Strävan efter att minska risker för arbetsskador och uppnå en god arbetsmiljö är betydelsefull idag inte minst på byggarbetsplatser.   Syftet med examensarbetet var att, utifrån kartläggning av arbetsmiljön på en byggarbetsplats, belysa några faktorer som har inverkan på arbetsmiljön. Magisteruppsatsen har begränsats till att undersöka arbetsmiljön på en byggarbetsplats i ett bergrum. Några organisatoriska faktorer som säkerhetskultur, attityder, kunskap samt fysiska faktorer som belysning, b...

  20. Technology developments and first measurements on inverse Low Gain Avalanche Detector (iLGAD) for high energy physics applications

    CERN Document Server

    Carulla, M.; Fernández-Martínez, P.; IMB-CNM (CSIC); Flores, D.; IMB-CNM (CSIC); González, J.; Hidalgo, S.; Jaramillo, R.; Merlos, A.; Palomo, F.R.; Pellegrini, G; Quirion, D.; Vila, I.

    2016-01-01

    ABSTRACT: The first Inverse Low Gain Avalanche Detector (iLGAD) have been fabricated at IMB-CNM (CSIC). The iLGAD structure includes the multiplication diffusions at the ohmic contact side while the segmentation is implemented at the front side with multiple P + diffusions. Therefore, iLGAD is P on P position-sensitive detector with a uniform electric field all along the device area that guarantees the same signal amplification wherever a particle passes through the sensitive bulk solving the main draw of the LGAD microstrip detector. However, the detection current is dominated by holes flowing back from the multiplication junction with the subsequent transient current pulse duration increase in comparison with conventional LGAD counterparts. Applications of iLGAD range from tracking and timing applications like determination of primary interaction vertex to medical imaging. The paper addresses the optimization of the iLGAD structure with the aid of TCAD simul...

  1. Simulation studies of the n{sup +}n{sup -} Si sensors having p-spray/p-stop implant for the SiD experiment

    Energy Technology Data Exchange (ETDEWEB)

    Saxena, Pooja; Ranjan, Kirti [Centre for Detector and Related Software Technology, Department of Physics and Astrophysics, University of Delhi, Delhi 110007 (India); Bhardwaj, Ashutosh, E-mail: abhardwaj@physics.du.ac.in [Centre for Detector and Related Software Technology, Department of Physics and Astrophysics, University of Delhi, Delhi 110007 (India); Shivpuri, R.K.; Bhattacharya, Satyaki [Centre for Detector and Related Software Technology, Department of Physics and Astrophysics, University of Delhi, Delhi 110007 (India)

    2011-12-01

    Silicon Detector (SiD) is one of the proposed detectors for the future International Linear Collider (ILC). In the innermost vertex of the ILC, Si micro-strip sensors will be exposed to the neutron background of around 1-1.6 Multiplication-Sign 10{sup 10} 1 MeV equivalent neutrons cm{sup -2} year{sup -1}. The p{sup +}n{sup -}n{sup +} double-sided Si strip sensors are supposed to be used as position sensitive sensors for SiD. The shortening due to electron accumulation on the n{sup +}n{sup -} side of these sensors leads to uniform spreading of signal over all the n{sup +} strips and thus ensuring good isolation between the n{sup +} strips becomes one of the major issues in these sensors. One of the possible solutions is the use of floating p-type implants introduced between the n{sup +} strips (p-stops) and another alternative is the use of uniform layer of p-type implant on the entire n-side (p-spray). However, pre-breakdown micro-discharge is reported because of the high electric field at the edge of the p-stop/p-spray. An optimization of the implant dose profile of the p-stop and p-spray is required to achieve good electrical isolation while ensuring satisfactory breakdown performance of the Si sensors. Preliminary results of the simulation study performed on the n{sup +}n{sup -} Si sensors having p-stop and p-spray using device simulation program, ATLAS, are presented.

  2. Effects of epitaxial structure and processing on electrical characteristics of InAs-based nBn infrared detectors

    Science.gov (United States)

    Du, X.; Savich, G. R.; Marozas, B. T.; Wicks, G. W.

    2017-02-01

    The conventional processing of the III-V nBn photodetectors defines mesa devices by etching the contact n-layer and stopping immediately above the barrier, i.e., a shallow etch. This processing enables great suppression of surface leakage currents without having to explore surface passivation techniques. However, devices that are made with this processing scheme are subject to lateral diffusion currents. To address the lateral diffusion current, we compare the effects of different processing approaches and epitaxial structures of nBn detectors. The conventional solution for eliminating lateral diffusion current, a deep etch through the barrier and the absorber, creates increased dark currents and an increased device failure rate. To avoid deep etch processing, a new device structure is proposed, the inverted-nBn structure. By comparing with the conventional nBn structure, the results show that the lateral diffusion current is effectively eliminated in the inverted-nBn structure without elevating the dark currents.

  3. The strain effect in the surface barrier structures prepared on the basis of n-Si and p-Si

    International Nuclear Information System (INIS)

    Mamatkarimov, O.O.; Tuychiev, U.A.

    2004-01-01

    Full text: One of the ways of creation of large deformations in small volume of the semiconductor is the deformation created by a needle. At insignificant change of external influence the large deformation under a needle in small volume of the semiconductor the significant change of electrophysical parameters of the semiconductor in small volume is created. Therefore, in the present work the results of researches of local pressure influence on physical properties of surface barrier structures has been performed on the basis of silicon with Ni and Mn impurity. The relative changes of a direct current made on the basis n-Si and p-Si from a different degree of compensation are given depending on size of local pressure are shown. Change of current in structures Au-Si -Sb with specific resistance of base ρ=80 Ω·cm and ρ=200 Ω·cm are I p /I 0 =3-3.5 times and I P /I ) =2-2.5 times at pressure P=1.6·10 8 Pa respectively. These data show, that in structures received on the basis of initial silicon, change of a direct current with pressure is in inverse proportion to size of resistance of base of the diode. And in structures Au-Si -Sb with specific resistance of base ρ=5·10 2 Ω·cm and ρ=3·10 3 Ω·cm these changes accordingly are I P /I 0 =7 and I P /I 0 =14. Changes of direct current relative to initial value for structures on the basis p-Si with specific resistance ρ=7·10 2 Ω·cm and ρ=4·10 3 Ω·cm) are I P /I 0 =9 and I P /I 0 =16 respectively. The same changes of direct current of structures on the basis P-Si at local pressure are I P /I 0 =2-2.5. The given values I P /I 0 testify that as in structures Au-Si -Sb, and structures Sb-p-Si -Au, unlike structures on the basis of initial silicon, the values I P /I 0 are increased with increase of specific resistance of base of structures

  4. Scintillation detectors of Alborz-I experiment

    International Nuclear Information System (INIS)

    Pezeshkian, Yousef; Bahmanabadi, Mahmud; Abbasian Motlagh, Mehdi; Rezaie, Masume

    2015-01-01

    A new air shower experiment of the Alborz Observatory, Alborz-I, located at the Sharif University of Technology, Iran, will be constructed in near future. An area of about 30×40 m 2 will be covered by 20 plastic scintillation detectors (each with an area of 50×50 cm 2 ). A series of experiments have been performed to optimize the height of light enclosures of the detectors for this array and the results have been compared to an extended code simulation of these detectors. Operational parameters of the detector obtained by this code are cross checked by the Geant4 simulation. There is a good agreement between the extended-code and Geant4 simulations. We also present further discussions on the detector characteristics, which can be applicable for all scintillation detectors with a similar configuration

  5. Enhancement of light output power of GaN-based light-emitting diodes with photonic quasi-crystal patterned on p-GaN surface and n-side sidewall roughing

    Science.gov (United States)

    2013-01-01

    In this paper, GaN-based light-emitting diodes (LEDs) with photonic quasi-crystal (PQC) structure on p-GaN surface and n-side roughing by nano-imprint lithography are fabricated and investigated. At an injection current of 20 mA, the LED with PQC structure on p-GaN surface and n-side roughing increased the light output power of the InGaN/GaN multiple quantum well LEDs by a factor of 1.42, and the wall-plug efficiency is 26% higher than the conventional GaN-based LED type. After 500-h life test (55°C/50 mA), it was found that the normalized output power of GaN-based LED with PQC structure on p-GaN surface and n-side roughing only decreased by 6%. These results offer promising potential to enhance the light output powers of commercial light-emitting devices using the technique of nano-imprint lithography. PMID:23683526

  6. Response function of a p type - HPGe detector

    International Nuclear Information System (INIS)

    Lopez-Pino, Neivy; Cabral, Fatima Padilla; D'Alessandro, Katia; Maidana, Nora Lia; Vanin, Vito Roberto

    2011-01-01

    The response function of a HPGe detector depends on Ge crystal dimensions and dead layers thicknesses; most of them are not given by the manufacturers or change with detector damage from neutrons or contact with the atmosphere and therefore must be experimentally determined. The response function is obtained by a Monte-Carlo simulation procedure based on the Ge crystal characteristics. In this work, a p-type coaxial HPGe detector with 30% efficiency, manufactured in 1989, was investigated. The crystal radius and length and the inner hole dimensions were obtained scanning the capsule both in the radial and axial directions using 4 mm collimated beams from 137 Cs, 207 Bi point sources placed on a x-y table in steps of 2,00 mm. These dimensions were estimated comparing the experimental peak areas with those obtained by simulation using several hole configurations. In a similar procedure, the frontal dead layer thickness was determined using 2 mm collimated beams of the 59 keV gamma-rays from 241 Am and 81 keV from 133 Ba sources hitting the detector at 90 deg and 45 deg with respect to the capsule surface. The Monte Carlo detector model included, besides the crystal, hole and capsules sizes, the Ge dead-layers. The obtained spectra were folded with a gaussian resolution function to account for electronic noise. The comparison of simulated and experimental response functions for 4 mm collimated beams of 60 Co, 137 Cs, and 207 Bi points sources placed at distances of 7, 11 and 17 cm from the detector end cap showed relative deviations of about 10% in general and below 10% in the peak. The frontal dead layer thickness determined by our procedure was different from that specified by the detector manufacturer. (author)

  7. Silicon P.I.N. Junctions used for studies of radiation damage

    International Nuclear Information System (INIS)

    Lanore, J.

    1964-06-01

    Irradiation of silicon P.I.N. junction has been studied primarily for the purpose of developing a radiation damage dosimeter, but also for the purpose of investigating silicon itself. It is known that the rate of recombination of electrons and holes is a linear function of defects introduced by neutron irradiation. Two methods have been used to measure that rate of recombination: forward characteristic measurements, recovery time measurements. In order to explain how these two parameters depend on recombination rate we have given a theory of the P.I.N. junction. We have also given an idea of the carrier lifetime dependence versus temperature. Annealing effects in the range of 70 to 700 K have also been studied, we found five annealing stages with corresponding activation energies. As an application for these studies, we developed a radiation damage dosimeter with which we made several experiments in facilities such as Naiade or Marias. (author) [fr

  8. Combined Bulk and Surface Radiation Damage Effects at Very High Fluences in Silicon Detectors: Measurements and TCAD Simulations

    CERN Document Server

    Moscatelli, F; Morozzi, A; Mendicino, R; Dalla Betta, G F; Bilei, G M

    2016-01-01

    In this work we propose a new combined TCAD radiation damage modelling scheme, featuring both bulk and surface radiation damage effects, for the analysis of silicon detectors aimed at the High Luminosity LHC. In particular, a surface damage model has been developed by introducing the relevant parameters (NOX, NIT) extracted from experimental measurements carried out on p-type substrate test structures after gamma irradiations at doses in the range 10-500 Mrad(Si). An extended bulk model, by considering impact ionization and deep-level cross-sections variation, was included as well. The model has been validated through the comparison of the simulation findings with experimental measurements carried out at very high fluences (2×1016 1 MeV equivalent n/cm2) thus fostering the application of this TCAD approach for the design and optimization of the new generation of silicon detectors to be used in future HEP experiments.

  9. Development of an X-ray detector using surface plasmon resonance

    International Nuclear Information System (INIS)

    Kunieda, Y.; Nagashima, K.; Hasegawa, N.; Ochi, Y.

    2009-01-01

    A new X-ray detector using surface plasmon resonance (SPR) is proposed. The detector consists of a prism coated with a thin metal film and semiconductor film. Optical laser pulse induces SPR condition on the metal surface, and synchronized X-ray pulse which is absorbed into the semiconductor film can be detected by measuring the change of the resonance condition of the surface plasmon. The expected time and spatial resolution of this detector is better than that of conventional X-ray detectors by combining this SPR measurement with ultra-short laser pulse as the probe beam. Our preliminary investigation using Au and ZnSe coated prism implies this scheme works well as the detector for the ultra-short X-ray pulse.

  10. The Influence of High-Energy Electrons Irradiation on Surface of n-GaP and on Au/n-GaP/Al Schottky Barrier Diode

    Science.gov (United States)

    Demir, K. Çinar; Kurudirek, S. V.; Oz, S.; Biber, M.; Aydoğan, Ş.; Şahin, Y.; Coşkun, C.

    We fabricated 25 Au/n-GaP/Al Schottky devices and investigated the influence of high electron irradiation, which has 12MeV on the devices, at room temperature. The X-ray diffraction patterns, scanning electron microscopic images and Raman spectra of a gallium phosphide (GaP) semiconductor before and after electron irradiation have been analyzed. Furthermore, some electrical measurements of the devices were carried out through the current-voltage (I-V) and capacitance-voltage (C-V) measurements. From the I-V characteristics, experimental ideality factor n and barrier height Φ values of these Schottky diodes have been determined before and after irradiation, respectively. The results have also been analyzed statically, and a gauss distribution has been obtained. The built-in potential Vbi, barrier height Φ, Fermi level EF and donor concentration Nd values have been determined from the reverse bias C-V and C-2-V curves of Au/n-GaP/Al Schottky barrier diodes at 100kHz before and after 12MeV electron irradiation. Furthermore, we obtained the series resistance values of Au/n-GaP/Al Schottky barrier diodes with the help of different methods. Experimental results confirmed that the electrical characterization of the device changed with the electron irradiation.

  11. Fabrication and characterization of n-on-n silicon pixel detectors compatible with the Medipix2 readout chip

    Energy Technology Data Exchange (ETDEWEB)

    Zorzi, N. [ITC-irst, Divisione Microsistemi, Via Sommarive 18, I-38050 Povo (Trento) (Italy)]. E-mail: zorzi@itc.it; Bisogni, M.G. [Dipartimento di Fisica, Universita di Pisa and Sezione INFN, Via Buonarroti 2, I-56127 Pisa (Italy); Boscardin, M. [ITC-irst, Divisione Microsistemi, Via Sommarive 18, I-38050 Povo (Trento) (Italy); Dalla Betta, G.-F. [Dipartimento di Informatica e Telecomunicazioni, Universita di Trento, Via Sommarive 14, I-38050 Povo (Trento) (Italy); Gregori, P. [ITC-irst, Divisione Microsistemi, Via Sommarive 18, I-38050 Povo (Trento) (Italy); Novelli, M. [Dipartimento di Fisica, Universita di Pisa and Sezione INFN, Via Buonarroti 2, I-56127 Pisa (Italy); Piemonte, C. [ITC-irst, Divisione Microsistemi, Via Sommarive 18, I-38050 Povo (Trento) (Italy); Quattrocchi, M. [Dipartimento di Fisica, Universita di Pisa and Sezione INFN, Via Buonarroti 2, I-56127 Pisa (Italy); Ronchin, S. [ITC-irst, Divisione Microsistemi, Via Sommarive 18, I-38050 Povo (Trento) (Italy); Rosso, V. [Dipartimento di Fisica, Universita di Pisa and Sezione INFN, Via Buonarroti 2, I-56127 Pisa (Italy)

    2005-07-01

    Pixel detectors for mammographic applications have been fabricated at ITC-irst on 800 {mu}m thick silicon wafers adopting a double side n{sup +}-on-n fabrication technology. The activity aims at increasing the X-ray detection efficiency in the energy range of interest minimizing the risk of electrical discharges in hybrid systems operating at high voltages. The detectors, having a layout compatible with the Medipix2 photon counting chip, feature two different design solutions for the p-isolation between neighboring n{sup +}-pixels. We report on the characterization of the fabrication process and on preliminary results of electrical measurements on full detectors and pixel test structures. In particular, we found that the detectors can be reliably operated above the full depletion voltage regardless of the isolation design, that however, impacts the performances in terms of current-voltage characteristics, single pixel currents, inter-pixel resistances and inter-pixel capacitances.

  12. Fabrication and characterization of n-on-n silicon pixel detectors compatible with the Medipix2 readout chip

    International Nuclear Information System (INIS)

    Zorzi, N.; Bisogni, M.G.; Boscardin, M.; Dalla Betta, G.-F.; Gregori, P.; Novelli, M.; Piemonte, C.; Quattrocchi, M.; Ronchin, S.; Rosso, V.

    2005-01-01

    Pixel detectors for mammographic applications have been fabricated at ITC-irst on 800 μm thick silicon wafers adopting a double side n + -on-n fabrication technology. The activity aims at increasing the X-ray detection efficiency in the energy range of interest minimizing the risk of electrical discharges in hybrid systems operating at high voltages. The detectors, having a layout compatible with the Medipix2 photon counting chip, feature two different design solutions for the p-isolation between neighboring n + -pixels. We report on the characterization of the fabrication process and on preliminary results of electrical measurements on full detectors and pixel test structures. In particular, we found that the detectors can be reliably operated above the full depletion voltage regardless of the isolation design, that however, impacts the performances in terms of current-voltage characteristics, single pixel currents, inter-pixel resistances and inter-pixel capacitances

  13. CsI calorimeter of the CMD-3 detector

    International Nuclear Information System (INIS)

    Aulchenko, V.M.; Bondar, A.E.; Erofeev, A.L.; Kovalenko, O.A.; Kozyrev, A.N.; Kuzmin, A.S.; Logashenko, I.B.; Razuvaev, G.P.; Ruban, A.A.; Shebalin, V.E.; Shwartz, B.A.; Talyshev, A.A.; Titov, V.M.; Yudin, Yu.V.; Epifanov, D.A.

    2015-01-01

    The VEPP-2000 e + e − collider has been operated at Budker Institute of Nuclear Physics since 2010. The experiments are performed with two detectors CMD-3 and SND. The calorimetry at the CMD-3 detector is based on three subsystems, two coaxial barrel calorimeters—Liquid Xenon Calorimeter and crystal CsI calorimeter, and endcap calorimeter with BGO crystals. This paper describes the CsI calorimeter of the CMD-3 detector. The calorimeter design, its electronics and calibration procedures are discussed

  14. The two sides of silicon detectors

    International Nuclear Information System (INIS)

    Devine, S.R.

    2001-10-01

    Results are presented on in situ irradiation of silicon detector's at cryogenic temperature. The results show that irradiation at cryogenic temperatures does not detrimentally effect a silicon detectors performance when compared to its irradiation at room temperature. Operation of silicon devices at cryogenic temperatures offers the advantage of reducing radiation-induced leakage current to levels of a few pA, while at 130K the Lazarus Effect plays an important role i.e. minimum voltage required for full depletion. Performing voltage scans on a 'standard' silicon pad detector pre- and post annealing, the charge collection efficiency was found to be 60% at 200V and 95% at 200V respectively. Time dependence measurements are presented, showing that for a dose of 6.5x10 14 p/cm 2 (450GeV protons) the time dependence of the charge collection efficiency is negligible. However, for higher doses, 1.2x10 15 p/cm 2 , the charge collection efficiency drops from an initial measured value of 67% to a stable value of 58% over a period of 15 minutes for reversed biased diodes. An analysis of the 'double junction' effect is also presented. A comparison between the Transient Current Technique and an X-ray technique is presented. The double junction has been observed in p + /n/n + silicon detectors after irradiation beyond 'type inversion', corresponding to a fluence equivalent to ∼3x10 13 cm -2 1MeV neutrons, producing p + /p/n + and essentially two p-n junctions within one device. With increasing bias voltage, as the electric field is extending into the detector bulk from opposite sides of the silicon detector, there are two distinct depletion regions that collect charge signal independently. Summing the signal charge from the two regions, one is able to reconstruct the initial energy of the incident particle. From Transient Current measurements it is apparent that E-field manipulation is possible by excess carrier injection, enabling a high enough E-field to extend across the

  15. Performance evaluation of 3D-DDTC detectors on p-type substrates

    International Nuclear Information System (INIS)

    Dalla Betta, Gian-Franco; Boscardin, Maurizio; Bosisio, Luciano; Koehler, Michael; Parzefall, Ulrich; Ronchin, Sabina; Wiik, Liv; Zoboli, Andrea; Zorzi, Nicola

    2010-01-01

    In this work, we report on the noise and signal properties of n-on-p, 3D Double-Side Double Type Column (3D-DDTC) detectors fabricated at FBK-irst (Trento, Italy). Compared to full 3D detectors, devices made with this approach allow for a simpler fabrication process, but the efficiency and speed of the charge collection process critically depend on the column overlap and should be carefully evaluated. Measurements were performed on detectors in the microstrip configuration coupled to the ATLAS ABCD3T binary read-out. Spatially resolved signal efficiency tests made with a pulsed infrared laser setup and charge collection efficiency tests made with a β source setup are here reported.

  16. Performance evaluation of 3D-DDTC detectors on p-type substrates

    Energy Technology Data Exchange (ETDEWEB)

    Dalla Betta, Gian-Franco, E-mail: dallabe@disi.unitn.i [Dipartimento Ingegneria e Scienza dell' Informazione, Universita di Trento, and INFN Trento, via Sommarive 14, 38123 Povo di Trento (Italy); Boscardin, Maurizio [Fondazione Bruno Kessler (FBK-irst), via Sommarive 18, 38123 Povo di Trento (Italy); Bosisio, Luciano [Dipartimento di Fisica, Universita di Trieste, and INFN Trieste, via A. Valerio 2, 34127 Trieste (Italy); Koehler, Michael; Parzefall, Ulrich [Institute of Physics, University of Freiburg, Hermann-Herder-Str. 3, 79104 Freiburg (Germany); Ronchin, Sabina [Fondazione Bruno Kessler (FBK-irst), via Sommarive 18, 38123 Povo di Trento (Italy); Wiik, Liv [Institute of Physics, University of Freiburg, Hermann-Herder-Str. 3, 79104 Freiburg (Germany); Zoboli, Andrea [Dipartimento Ingegneria e Scienza dell' Informazione, Universita di Trento, and INFN Trento, via Sommarive 14, 38123 Povo di Trento (Italy); Zorzi, Nicola [Fondazione Bruno Kessler (FBK-irst), via Sommarive 18, 38123 Povo di Trento (Italy)

    2010-12-11

    In this work, we report on the noise and signal properties of n-on-p, 3D Double-Side Double Type Column (3D-DDTC) detectors fabricated at FBK-irst (Trento, Italy). Compared to full 3D detectors, devices made with this approach allow for a simpler fabrication process, but the efficiency and speed of the charge collection process critically depend on the column overlap and should be carefully evaluated. Measurements were performed on detectors in the microstrip configuration coupled to the ATLAS ABCD3T binary read-out. Spatially resolved signal efficiency tests made with a pulsed infrared laser setup and charge collection efficiency tests made with a {beta} source setup are here reported.

  17. Measurement of the $\\bar{p}p \\rightarrow \\bar{n}n$ Charge-Exchange Differential Cross-Section

    CERN Multimedia

    2002-01-01

    The aim of this proposal is a measurement of the differential cross-section of the $\\bar{p}$p $\\rightarrow$ $\\bar{n}$n charge-exchange reaction with a point-to-point precision of 1\\% in the forward direction, and an absolute normalization error of 3\\%. The high precision of the data should allow, inter alia, a determination of the $\\pi$NN coupling constant to better than 2\\%.\\\\ \\\\ The measurement will be done using the existing neutron and antineutron detectors built for experiment PS199 and liquid hydrogen target. In one week of running time, with a $\\bar{p}$ beam intensity of 3 $ 10 ^{5} $ $\\bar{p}$/sec, the reaction will be measured at a few $\\bar{p}$ momenta, in the range 500 to 900~MeV/c.

  18. Silicon P.I.N. Junctions used for studies of radiation damage; Etude de l'irradiation aux neutrons rapides du silicium au moyen de jonctions P.I.N

    Energy Technology Data Exchange (ETDEWEB)

    Lanore, J. [Commissariat a l' Energie Atomique, Fontenay-aux-Roses (France). Centre d' Etudes Nucleaires

    1964-06-01

    Irradiation of silicon P.I.N. junction has been studied primarily for the purpose of developing a radiation damage dosimeter, but also for the purpose of investigating silicon itself. It is known that the rate of recombination of electrons and holes is a linear function of defects introduced by neutron irradiation. Two methods have been used to measure that rate of recombination: forward characteristic measurements, recovery time measurements. In order to explain how these two parameters depend on recombination rate we have given a theory of the P.I.N. junction. We have also given an idea of the carrier lifetime dependence versus temperature. Annealing effects in the range of 70 to 700 K have also been studied, we found five annealing stages with corresponding activation energies. As an application for these studies, we developed a radiation damage dosimeter with which we made several experiments in facilities such as Naiade or Marias. (author) [French] L'irradiation de structures P.I.N. etait faite dans le but d'etudier principalement la mise au point d'un dosimetre a ''radiation damage'' et aussi pour etudier plus profondement le silicium lui-meme. On sait que le taux de recombinaison electrons-trous est une fonction lineaire du taux de defauts introduits par irradiation aux neutrons. Deux methodes ont ete utilisees pour atteindre ce taux de recombinaison: mesures de la caracteristique directe, mesures du temps de retournement. Pour expliquer de quelle facon ces parametres dependent du taux de recombinaison. Nous avons donne une theorie de la jonction P.I.N. Nous avons aussi donne l'allure des variations du temps de vie des porteurs en fonction de la temperature. Nous avons d'autre part effectue des recuits entre 70 et 700 K, domaine dans lequel nous avons trouve cinq etapes de ''guerison'' avec les energies d'activation correspondantes. En application de ces etudes nous avons mis ou point un

  19. Lunar rock surfaces as detectors of solar processes

    International Nuclear Information System (INIS)

    Hartung, J.B.; Hunter College, New York, NY)

    1980-01-01

    Lunar rock surfaces exposed at or just below the lunar surface are considered as detectors of the solar wind, solar flares and solar-derived magnetic fields through their interactions with galactic cosmic rays. The degradation of the solar detector capabilities of lunar surface rocks by meteoroid impact erosion, accreta deposition, loose dust, and sputtering, amorphous layer formation and accelerated diffusion due to solar particles and illumination is discussed, and it is noted that the complex interactions of factors affecting the outer micron of exposed surface material has so far prevented the development of a satisfactory model for a particle detector on the submicron scale. Methods for the determination of surface exposure ages based on the accumulation of light solar wind noble gases, Fe and Mg, impact craters, solar flare tracks, and cosmogenic Kr isotopes are examined, and the systematic variations in the ages determined by the various clocks are discussed. It is concluded that a means of obtaining satisfactory quantitative rate or flux data has not yet been established

  20. Search for a pentaquark decaying to <i>pK>0S in <i>γN>

    Energy Technology Data Exchange (ETDEWEB)

    Link, J. M.; Yager, P. M.; Anjos, J. C.; Bediaga, I.; Castromonte, C.; Machado, A. A.; Magnin, J.; Massafferri, A.; de Miranda, J. M.; Pepe, I. M.; Polycarpo, E.; dos Reis, A. C.; Carrillo, S.; Casimiro, E.; Cuautle, E.; Sánchez-Hernández, A.; Uribe, C.; Vázquez, F.; Agostino, L.; Cinquini, L.; Cumalat, J. P.; Frisullo, V.; O' Reilly, B.; Segoni, I.; Stenson, K.; Butler, J. N.; Cheung, H. W. K.; Chiodini, G.; Gaines, I.; Garbincius, P. H.; Garren, L. A.; Gottschalk, E.; Kasper, P. H.; Kreymer, A. E.; Kutschke, R.; Wang, M.; Benussi, L.; Bertani, M.; Bianco, S.; Fabbri, F. L.; Pacetti, S.; Zallo, A.; Reyes, M.; Cawlfield, C.; Kim, D. Y.; Rahimi, A.; Wiss, J.; Gardner, R.; Kryemadhi, A.; Chung, Y. S.; Kang, J. S.; Ko, B. R.; Kwak, J. W.; Lee, K. B.; Cho, K.; Park, H.; Alimonti, G.; Barberis, S.; Boschini, M.; Cerutti, A.; D' Angelo, P.; DiCorato, M.; Dini, P.; Edera, L.; Erba, S.; Inzani, P.; Leveraro, F.; Malvezzi, S.; Menasce, D.; Mezzadri, M.; Moroni, L.; Pedrini, D.; Pontoglio, C.; Prelz, F.; Rovere, M.; Sala, S.; Davenport, T. F.; Arena, V.; Boca, G.; Bonomi, G.; Gianini, G.; Liguori, G.; Lopes Pegna, D.; Merlo, M. M.; Pantea, D.; Ratti, S. P.; Riccardi, C.; Vitulo, P.; Göbel, C.; Olatora, J.; Hernandez, H.; Lopez, A. M.; Mendez, H.; Paris, A.; Quinones, J.; Ramirez, J. E.; Zhang, Y.; Wilson, J. R.; Handler, T.; Mitchell, R.; Engh, D.; Givens, K. M.; Hosack, M.; Johns, W. E.; Luiggi, E.; Nehring, M.; Sheldon, P. D.; Vaandering, E. W.; Webster, M.; Sheaff, M.

    2006-08-01

    We present a search for a pentaquark decaying strongly to <i>pK>0S in <i>γN> collisions at a center-of-mass energy up to 25 GeV/c2. Finding no evidence for such a state in the mass range of 1470 MeV/c2 to 2200 MeV/c2, we set limits on the yield and on the cross section times branching ratio relative to Σ* (1385)± and K* (892) +.

  1. Evaluation excitation functions for "2"8Si(n,p)"2"8Al, "3"1P(n,p)"3"1Si, and "1"1"3In(n,γ)"1"1"4"mIn reactions

    International Nuclear Information System (INIS)

    Zolotarev, K.I.

    2014-10-01

    Cross section data for "2"8Si(n,p)"2"8Al, "3"1P(n,p)"3"1Si and "1"1"3In(n,γ)"1"1"4"mIn reactions are needed for solving a wide spectrum of scientific and technical tasks. The excitation function of "2"8Si(n,p)"2"8Al reaction refers to the nuclear data involved in fusion reactor design calculations. The "2"8Si(n,p)"2"8Al reaction is interesting also as the monitor reaction for measurements at fusion facilities. Activation detectors on the basis of the 31P(n,p)31Si reaction are commonly used in the reactor dosimetry. The "1"1"3In(n,γ)"1"1"4"mIn reaction is promising regarding reactor dosimetry application for two reasons. First, due to the "1"1"4"mIn decay parameters which are rather suitable for activation measurements. Half-life of "1"1"4"mIn is equal to T_1/_2 = (49.51 ± 0.01) days and gamma spectrum accompanying decay has only one line with energy 190.27 keV and intensity (15.56 ± 0.15)%. Second, the "1"1"3In(n,γ)"1"1"4"mIn reaction rate may be measured by using one activation detector simultaneously with the "1"1"5In(n,γ)"1"1"6"mIn reaction. Preliminary analysis of existing evaluated excitation functions for "2"8Si(n,p)"2"8Al, "3"1P(n,p)"3"1Si and "1"1"3In(n,γ)"1"1"4"mIn reactions show that new evaluations are needed for all above mentioned reactions. This report is devoted to the preparation of the new evaluations of cross sections data and related covariance matrixes of uncertainties for the "2"8Si(n,p)"2"8Al, "3"1P(n,p)"3"1Si and "1"1"3In(n,γ)"1"1"4"mIn reactions.

  2. BiI{sub 3} single crystal for room-temperature gamma ray detectors

    Energy Technology Data Exchange (ETDEWEB)

    Saito, T., E-mail: saito.tatsuya125@canon.co.jp [Frontier Research Center, Canon Inc., 3-30-2, Shimomaruko, Ohta-ku, Tokyo 146-8501 (Japan); Iwasaki, T. [Frontier Research Center, Canon Inc., 3-30-2, Shimomaruko, Ohta-ku, Tokyo 146-8501 (Japan); Kurosawa, S.; Yoshikawa, A. [Institute for Materials Research, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai, Miyagi 980-8577 (Japan); New Industry Creation Hatchery Center (NICHe), Tohoku University, 6-6-10 Aoba, Aramaki, Aoba-ku, Sendai, Miyagi 980-8579 (Japan); Den, T. [Frontier Research Center, Canon Inc., 3-30-2, Shimomaruko, Ohta-ku, Tokyo 146-8501 (Japan)

    2016-01-11

    BiI{sub 3} single crystals were grown by the physical vapor transport method. The repeated sublimation of the starting material reduced impurities in the BiI{sub 3} single crystal to sub-ppm levels. The detector was fabricated by depositing Au electrodes on both surfaces of the 100-μm-thick BiI{sub 3} single crystal platelet. The resistivity of the BiI{sub 3} single crystal was increased by post-annealing in an iodine atmosphere (ρ=1.6×10{sup 11} Ω cm). Pulse height spectroscopy measurements showed clear peaks in the energy spectrum of alpha particles or gamma rays. It was estimated that the mobility-lifetime product was μ{sub e}τ{sub e}=3.4–8.5×10{sup −6} cm{sup 2}/V and the electron–hole pair creation energy was 5.8 eV. Our results show that BiI{sub 3} single crystals are promising candidates for detectors used in radiographic imaging or gamma ray spectroscopy.

  3. Labeling of - N-Isopropil - p - I-Anphetamine (IMP-131I) and its biological distribution in rats

    International Nuclear Information System (INIS)

    Barboza, M.F. de; Goncalves, R.S.V.; Muramoto, E.

    1988-09-01

    The described labeling and purification preparation of N-Isopropil-p 131 I-anphetamine ( 131 I-IMP) represents a fast and efficient method to obtains a compound that fullfills all criterions of purity for its application 'IN VIVO'. The labeling yield was 68-78% and the radiochemical purity performed by paper chromatography and electrophorese was 97-99%. As demostrated in animal experiments, the cerebral affinity offers a possibility to study brain diseases in clinical studies when the product will be labelled with 123 I. (author) [pt

  4. A p-n heterojunction of CuI/TiO2 with enhanced photoelectrocatalytic activity for methanol electro-oxidation

    International Nuclear Information System (INIS)

    Sun, Mingjuan; Hu, Jiayue; Zhai, Chunyang; Zhu, Mingshan; Pan, Jianguo

    2017-01-01

    Highlights: •A p-n heterojunction of CuI/TiO 2 is constructed. •CuI/TiO 2 is used as the support for depositing Pt nanoparticles. •Enhanced catalytic activity of MOR by using Pt-CuI/TiO 2 under light irradiation. •Improved charger separation contributes to enhanced photoelectrocatalytic activity. -- Abstract: In this paper, a p-n heterojunction including p-type CuI and n-type TiO 2 is first time constructed to be the support for the deposition of Pt. The as-prepared Pt-CuI/TiO 2 modified electrode is studied for the electrocatalytic oxidation of methanol both in dark and under light illumination. Compare to traditional electrocatalytic oxidation, the electrocatalytic activity of Pt-CuI/TiO 2 for methanol oxidation is improved with 4.0 times upon light illumination. Moreover, compare to bare CuI and TiO 2 upon light illumination, the heterostructure of CuI/TiO 2 displays 4.3 and 9.1 times enhanced electrocatalytic activity for methanol oxidation, respectively. The synergistic effects of photocatalysis and electrocatalysis as well as the effective charge transport in the p-n heterojunction of Pt-CuI/TiO 2 contribute such big enhancement. The present studies indicate that the constructing of p-n heterojunction provides more insights in the fields of photoelectrochemical and photo–assisted fuel cell system.

  5. Hybrid organic/inorganic position-sensitive detectors based on PEDOT:PSS/n-Si

    Science.gov (United States)

    Javadi, Mohammad; Gholami, Mahdiyeh; Torbatiyan, Hadis; Abdi, Yaser

    2018-03-01

    Various configurations like p-n junctions, metal-semiconductor Schottky barriers, and metal-oxide-semiconductor structures have been widely used in position-sensitive detectors. In this report, we propose a PEDOT:PSS/n-Si heterojunction as a hybrid organic/inorganic configuration for position-sensitive detectors. The influence of the thickness of the PEDOT:PSS layer, the wavelength of incident light, and the intensity of illumination on the device performance are investigated. The hybrid PSD exhibits very high sensitivity (>100 mV/mm), excellent nonlinearity (0.995) with a response time of heterojunction are very promising for developing a new class of position-sensitive detectors based on the hybrid organic/inorganic junctions.

  6. An ellipsometric measurement of optical properties for InP surfaces

    International Nuclear Information System (INIS)

    Liu, X.; Irene, E.A.; Hattangady, S.; Fountain, G.

    1990-01-01

    Several chemical cleaning procedures for InP surfaces have been studied using ellipsometry. The strong influence of cleaning on the optical properties of InP surfaces suggests that the measurements involved the formation of surface films. In order to determine the complex index of refraction for InP, a novel method which employs ellipsometry measurements of a thin nonabsorbing film on a substrate rather than measurements of a bare surface has been explored. From the knowledge of the refractive index for a series of thicknesses of films on a substrate, the complex refractive index value for the substrate can be determined. Plasma enhanced chemical vapor deposition (PECVD) SiO 2 and Si 3 N 4 films on InP have been used for this experiment, and the complex refractive index for InP has been determined to be 3.521 + i0.300 at the wavelength of 632.8 nm

  7. Superconducting NbN single-photon detectors on GaAs with an AlN buffer layer

    Energy Technology Data Exchange (ETDEWEB)

    Schmidt, Ekkehart; Merker, Michael; Ilin, Konstantin; Siegel, Michael [Institut fuer Mikro- und Nanoelektronische Systeme (IMS), Karlsruher Institut fuer Technologie, Hertzstrasse 16, 76187 Karlsruhe (Germany)

    2015-07-01

    GaAs is the material of choice for photonic integrated circuits. It allows the monolithic integration of single-photon sources like quantum dots, waveguide based optical circuits and detectors like superconducting nanowire single-photon detectors (SNSPDs) onto one chip. The growth of high quality NbN films on GaAs is challenging, due to natural occurring surface oxides and the large lattice mismatch of about 27%. In this work, we try to overcome these problems by the introduction of a 10 nm AlN buffer layer. Due to the buffer layer, the critical temperature of 6 nm thick NbN films was increased by about 1.5 K. Furthermore, the critical current density at 4.2 K of NbN flim deposited onto GaAs with AlN buffer is 50% higher than of NbN film deposited directly onto GaAs substrate. We successfully fabricated NbN SNSPDs on GaAs with a AlN buffer layer. SNSPDs were patterned using electron-beam lithography and reactive-ion etching techniques. Results on the study of detection efficiency and jitter of a NbN SNSPD on GaAs, with and without AlN buffer layer will be presented and discussed.

  8. nGEM fast neutron detectors for beam diagnostics

    International Nuclear Information System (INIS)

    Croci, G.; Claps, G.; Cavenago, M.; Dalla Palma, M.; Grosso, G.; Murtas, F.; Pasqualotto, R.; Perelli Cippo, E.; Pietropaolo, A.; Rebai, M.; Tardocchi, M.; Tollin, M.; Gorini, G.

    2013-01-01

    Fast neutron detectors with a sub-millimetric space resolution are required in order to qualify neutron beams in applications related to magnetically-controlled nuclear fusion plasmas and to spallation sources. A nGEM detector has been developed for the CNESM diagnostic system of the SPIDER NBI prototype for ITER and as beam monitor for fast neutrons lines at spallation sources. The nGEM is a triple GEM gaseous detector equipped with polypropylene and polyethylene layers used to convert fast neutrons into recoil protons through the elastic scattering process. This paper describes the results obtained by testing a nGEM detector at the ISIS spallation source on the VESUVIO beam line. Beam profiles (σ x =14.35 mm, σ y =15.75 mm), nGEM counting efficiency (around 10 -4 for 3 MeV n <15 MeV), detector stability (≈4.5%) and the effect of filtering the beam with different type of materials were successfully measured. The x beam profile was compared to the one measured by a single crystal diamond detector. Finally, the efficiency of the detector was simulated exploiting the GEANT4 tool

  9. SPICE evaluation of the S/N ratio for Si microstrip detectors

    International Nuclear Information System (INIS)

    Candelori, A.; Paccagnella, A.; Nardi, F.; Bacchetta, N.; Bisello, D.

    1999-01-01

    SPICE simulations of ac-coupled single-sided Si microstrip detectors connected to the PreShape 32 read-out chip have been performed in order to determine the geometrical characteristics (i.e., the strip pitch p and width w) which maximize the signal-to-noise ratio. All of the resistive and capacitive elements of the detector have been determined as a function of the w/p ratio by considering experimental and simulated data available in literature. The SPICE model the authors propose in this work takes into account all the main noise sources in the detector and read-out electronics. The minimum ionizing particle current signal shape has been introduced in the simulations. Two read-out configurations (every strip or every second strip) have been investigated for 6.4- and 12.8-cm-long detectors. The equivalent noise charge as determined by the simulations has been compared with analytical calculations, in order to determine the limits and the corrections to a simplified analytical noise model. Finally, general guidelines for the detector design have been proposed, based on the simulation results

  10. Systematics of gamma decay through low-lying vibrational levels of even--even nuclei excited by (p,p') and (n,n') reactions

    International Nuclear Information System (INIS)

    Koopman, R.P.

    1977-01-01

    A series of experiments was performed in which gamma-ray spectra were measured, using a Ge(Li) detector, for incident 7 to 26-MeV protons on the even-even vibrational nuclei 56 Fe, 62 Ni, 64 Zn, 108 Pd, 110 Cd, 114 Cd, 116 Cd, 116 Sn, 120 Sn, and 206 Pb, and for incident 14-MeV neutrons on natural Fe, Ni, Zn, Cd, Sn, and Pb. These measurements yielded gamma-ray cross sections from which it was inferred that almost all of the gamma cascades from (p,p') and (n,n') reactions passed down through the first 2 + levels. Consequently, the strength of the 2 + → 0 + gamma transitions were found to be an indirect measure of the (p,p') or (n,n') cross sections. Several types of nuclear model calculations were performed and compared with experimental results. These calculations included coupled-channel calculations to reproduce the direct, collective excitation of the low-lying levels, and statistical plus pre-equilibrium model calculations to reproduce the (p,p') and the (n,n') cross sections for comparison with the 2 + → 0 + gamma measurements. The agreement between calculation and experiment was generally good except at high energies, where pre-equilibrium processes dominate (i.e. around 26-MeV). Here discrepancies between calculations from the two different pre-equilibrium models and between the data and the calculations were found. Significant isospin mixing of T/sub greater than/ into T/sub less than/ states was necessary in order to have the calculations match the data for the (p,p') reactions, up to about 18-MeV

  11. Neutron irradiation effects on silicon detectors structure, electrical and mechanical characteristics

    International Nuclear Information System (INIS)

    Rabinovich, E.; Golan, G.; Axelevich, A.; Inberg, A.; Oksman, M.; Rosenwaks, I.; Lubarsky, G.; Seidman, A.; Croitoru, N.; Rancoita, P.G.; Rattaggi, M.

    1999-01-01

    Neutron irradiation effects on (p-n) and Schottky-junction silicon detectors were studied. It was shown that neutron interactions with monocrystalline silicon create specific types of microstructure defects with morphology differing according to the level of neutron fluences (Φ). The isolated dislocation loops, formed by interstitial atoms were observed in microstructure images for 10 10 ≤ Φ ≤ 10 12 n/cm 2 . A strong change in the dislocation loops density and a cluster formation was observed for Φ ≥ 10 13 n/cm 2 . A drastic silicon damage was found for fluences over 10 14 n/cm 2 . These fluences created zones enriched with all types of dislocations, covering more than 50 % of the total surface area. A mechanical fragility appeared in that fluence range in a form of microcracks. 10 14 n/cm 2 appears to be a critical value of neutron irradiation because of the radiation damage described above and because the characteristics I f -V f of silicon detectors can be differentiated from those obtained at low fluences. (A.C.)

  12. Use of GaN as a Scintillating Ionizing Radiation Detector

    Science.gov (United States)

    Wensman, Johnathan; Guardala, Noel; Mathur, Veerendra; Alasagas, Leslie; Vanhoy, Jeffrey; Statham, John; Marron, Daniel; Millett, Marshall; Marsh, Jarrod; Currie, John; Price, Jack

    2017-09-01

    Gallium nitride (GaN) is a III/V direct bandgap semiconductor which has been used in light emitting diodes (LEDs) since the 1990s. Currently, due to a potential for increased efficiency, GaN is being investigated as a replacement for silicon in power electronics finding potential uses ranging from data centers to electric vehicles. In addition to LEDs and power electronics though, doped GaN can be used as a gamma insensitive fast neutron detector due to the direct band-gap, light propagation properties, and response to ionizing radiations. Investigation of GaN as a semiconductor scintillator for use in a radiation detection system involves mapping the response function of the detector crystal over a range of photon and neutron energies, and measurements of light generation in the GaN crystal due to proton, alpha, and nitrogen projectiles. In this presentation we discuss the measurements made to date, and plausible interpretations of the response functions. This work funded in part by the Naval Surface Warfare Center, Carderock Division In-house Laboratory Independent Research program.

  13. Effect of III-nitride polarization on V{sub OC} in p-i-n and MQW solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Namkoong, Gon; Boland, Patrick; Foe, Kurniawan; Latimer, Kevin [Department of Electrical and Computer Engineering, Old Dominion University, Applied Research Center, 12050 Jefferson Avenue, Newport News, VA 23606 (United States); Bae, Si-Young; Shim, Jae-Phil; Lee, Dong-Seon [School of Information and Communications, Gwangju Institute of Science and Technology, 261 Cheomdan-gwagiro (Oryong-dong), Buk-gu, Gwangju 500-712 (Korea, Republic of); Jeon, Seong-Ran [Korea Photonics Technology Institute, 971-35, Wolchul-dong, Buk-gu, Gwangju, 500-779 (Korea, Republic of); Doolittle, W. Alan [School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, GA 30332 (United States)

    2011-02-15

    We performed detailed studies of the effect of polarization on III-nitride solar cells. Spontaneous and piezoelectric polarizations were assessed to determine their impacts upon the open circuit voltages (V{sub OC}) in p-i(InGaN)-n and multi-quantum well (MQW) solar cells. We found that the spontaneous polarization in Ga-polar p-i-n solar cells strongly modifies energy band structures and corresponding electric fields in a way that degrades V{sub OC} compared to non-polar p-i-n structures. In contrast, we found that piezoelectric polarization in Ga-polar MQW structures does not have a large influence on V{sub OC} compared to non-polar MQW structures. (copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  14. Novel laser-processed CsI:Tl detector for SPECT

    Energy Technology Data Exchange (ETDEWEB)

    Sabet, H., E-mail: hsabet@mgh.harvard.edu; Uzun-Ozsahin, D.; El-Fakhri, G. [Massachusetts General Hospital, Harvard Medical School, Boston, Massachusetts 02129 (United States); Bläckberg, L. [Massachusetts General Hospital, Harvard Medical School, Boston, Massachusetts 02129 and Department of Physics and Astronomy, Uppsala University, Uppsala 75120 (Sweden)

    2016-05-15

    Purpose: The aim of this work is to demonstrate the feasibility of a novel technique for fabrication of high spatial resolution CsI:Tl scintillation detectors for single photon emission computed tomography systems. Methods: The scintillators are fabricated using laser-induced optical barriers technique to create optical microstructures (or optical barriers) inside the CsI:Tl crystal bulk. The laser-processed CsI:Tl crystals are 3, 5, and 10 mm in thickness. In this work, the authors focus on the simplest pattern of optical barriers in that the barriers are created in the crystal bulk to form pixel-like patterns resembling mechanically pixelated scintillators. The monolithic CsI:Tl scintillator samples are fabricated with optical barrier patterns with 1.0 × 1.0 mm{sup 2} and 0.625 × 0.625 mm{sup 2} pixels. Experiments were conducted to characterize the fabricated arrays in terms of pixel separation and energy resolution. A 4 × 4 array of multipixel photon counter was used to collect the scintillation light in all the experiments. Results: The process yield for fabricating the CsI:Tl arrays is 100% with processing time under 50 min. From the flood maps of the fabricated detectors exposed to 122 keV gammas, peak-to-valley (P/V) ratios of greater than 2.3 are calculated. The P/V values suggest that regardless of the crystal thickness, the pixels can be resolved. Conclusions: The results suggest that optical barriers can be considered as a robust alternative to mechanically pixelated arrays and can provide high spatial resolution while maintaining the sensitivity in a high-throughput and cost-effective manner.

  15. Novel laser-processed CsI:Tl detector for SPECT

    International Nuclear Information System (INIS)

    Sabet, H.; Uzun-Ozsahin, D.; El-Fakhri, G.; Bläckberg, L.

    2016-01-01

    Purpose: The aim of this work is to demonstrate the feasibility of a novel technique for fabrication of high spatial resolution CsI:Tl scintillation detectors for single photon emission computed tomography systems. Methods: The scintillators are fabricated using laser-induced optical barriers technique to create optical microstructures (or optical barriers) inside the CsI:Tl crystal bulk. The laser-processed CsI:Tl crystals are 3, 5, and 10 mm in thickness. In this work, the authors focus on the simplest pattern of optical barriers in that the barriers are created in the crystal bulk to form pixel-like patterns resembling mechanically pixelated scintillators. The monolithic CsI:Tl scintillator samples are fabricated with optical barrier patterns with 1.0 × 1.0 mm"2 and 0.625 × 0.625 mm"2 pixels. Experiments were conducted to characterize the fabricated arrays in terms of pixel separation and energy resolution. A 4 × 4 array of multipixel photon counter was used to collect the scintillation light in all the experiments. Results: The process yield for fabricating the CsI:Tl arrays is 100% with processing time under 50 min. From the flood maps of the fabricated detectors exposed to 122 keV gammas, peak-to-valley (P/V) ratios of greater than 2.3 are calculated. The P/V values suggest that regardless of the crystal thickness, the pixels can be resolved. Conclusions: The results suggest that optical barriers can be considered as a robust alternative to mechanically pixelated arrays and can provide high spatial resolution while maintaining the sensitivity in a high-throughput and cost-effective manner.

  16. Measurement of $v_n$ - mean $p_T$ correlations in lead-lead collisions at $\\sqrt{s_{NN}} = 5.02$ TeV with the ATLAS detector.

    CERN Document Server

    The ATLAS collaboration

    2018-01-01

    The lead-lead data collected by the ATLAS detector at the LHC provide new opportunities to study dynamic properties of quark-gluon plasma. A tool to study these properties is the recently proposed modified Pearson's correlation coefficient, $\\rho$, that quantifies the correlation between the mean transverse momentum in the event, $[p_T]$, and the square of the flow harmonic magnitude, $v_n^2$. The measurement of $\\rho$ for $n$=2, 3 and 4 is performed using 22~$\\mu \\mathrm{b}^{-1}$ of minimum-bias Pb+Pb data at $\\sqrt{s_{NN}}$ = 5.02 TeV collected with the ATLAS detector at the LHC. To suppress non-flow effects, $v_n^2$ is calculated by correlating charged particles from two sub-events covering opposite pseudorapidity ranges of 0.75 $< |\\eta| <$ 2.5 while $[p_T]$ is evaluated for particles with $|\\eta|<$ 0.5. Significant (non-zero) values of $\\rho$ coefficients for all studied harmonics are obtained. The $\\rho$ coefficient as a function of centrality is observed to weakly depend on the transverse mome...

  17. Identification of HNF4A Mutation p.T130I and HNF1A Mutations p.I27L and p.S487N in a Han Chinese Family with Early-Onset Maternally Inherited Type 2 Diabetes

    Directory of Open Access Journals (Sweden)

    Ying Yang

    2016-01-01

    Full Text Available Maturity-onset diabetes of the young (MODY is characterized by the onset of diabetes before the age of 25 years, positive family history, high genetic predisposition, monogenic mutations, and an autosomal dominant mode of inheritance. Here, we aimed to investigate the mutations and to characterize the phenotypes of a Han Chinese family with early-onset maternally inherited type 2 diabetes. Detailed clinical assessments and genetic screening for mutations in the HNF4α, GCK, HNF-1α, IPF-1, HNF1β, and NEUROD1 genes were carried out in this family. One HNF4A mutation (p.T130I and two HNF1A polymorphisms (p.I27L and p.S487N were identified. Mutation p.T130I was associated with both early-onset and late-onset diabetes and caused downregulated HNF4A expression, whereas HNF1A polymorphisms p.I27L and p.S487N were associated with the age of diagnosis of diabetes. We demonstrated that mutation p.T130I in HNF4A was pathogenic as were the predicted polymorphisms p.I27L and p.S487N in HNF1A by genetic and functional analysis. Our results show that mutations in HNF4A and HNF1A genes might account for this early-onset inherited type 2 diabetes.

  18. Molecular recognition at methyl methacrylate/n-butyl acrylate (MMA/nBA) monomer unit boundaries of phospholipids at p-MMA/nBA copolymer surfaces.

    Science.gov (United States)

    Yu, Min; Urban, Marek W; Sheng, Yinghong; Leszczynski, Jerzy

    2008-09-16

    Lipid structural features and their interactions with proteins provide a useful vehicle for further advances in membrane proteins research. To mimic one of potential lipid-protein interactions we synthesized poly(methyl methacrylate/ n-butyl acrylate) (p-MMA/nBA) colloidal particles that were stabilized by phospholipid (PLs). Upon the particle coalescence, PL stratification resulted in the formation of surface localized ionic clusters (SLICs). These entities are capable of recognizing MMA/nBA monomer interfaces along the p-MMA/nBA copolymer backbone and form crystalline SLICs at the monomer interface. By utilizing attenuated total reflectance Fourier transform infrared (ATR FT-IR) spectroscopy and selected area electron diffraction (SAD) combined with ab initio calculations, studies were conducted that identified the origin of SLICs as well as their structural features formed on the surface of p-MMA/nBA copolymer films stabilized by 1,2-dilauroyl-sn-glycero-3-phosphocholine (DLPC) PL. Specific entities responsible for SLIC formation are selective noncovalent bonds of anionic phosphate and cationic quaternary ammonium segments of DLPC that interact with two neighboring carbonyl groups of nBA and MMA monomers of the p-MMA/nBA polymer backbone. To the best of our knowledge this is the first example of molecular recognition facilitated by coalescence of copolymer colloidal particles and the ability of PLs to form SLICs at the boundaries of the neighboring MMA and nBA monomer units of the p-MMA/nBA chain. The dominating noncovalent bonds responsible for the molecular recognition is a combination of H-bonding and electrostatic interactions.

  19. The development of p-type silicon detectors for the high radiation regions of the LHC

    CERN Document Server

    Hanlon, M D L

    1998-01-01

    This thesis describes the production and characterisation of silicon microstrip detectors and test structures on p-type substrates. An account is given of the production and full parameterisation of a p-type microstrip detector, incorporating the ATLAS-A geometry in a beam test. This detector is an AC coupled device incorporating a continuous p-stop isolation frame and polysilicon biasing and is typical of n-strip devices proposed for operation at the LHC. It was successfully read out using the FELix-128 analogue pipeline chip and a signal to noise (s/n) of 17+-1 is reported, along with a spatial resolution of 14.6+-0.2 mu m. Diode test structures were fabricated on both high resistivity float zone material and on epitaxial material and subsequently irradiated with 24 GeV protons at the CERN PS up to a dose of (8.22+-0.23) x 10 sup 1 sup 4 per cm sup 2. An account of the measurement program is presented along with results on the changes in the effective doping concentration (N sub e sub f sub f) with irradiat...

  20. Detector with internal gain for short-wave infrared ranging applications

    Science.gov (United States)

    Fathipour, Vala; Mohseni, Hooman

    2017-09-01

    Abstarct.Highly sensitive photon detectors are regarded as the key enabling elements in many applications. Due to the low photon energy at the short-wave infrared (SWIR), photon detection and imaging at this band are very challenging. As such, many efforts in photon detector research are directed toward improving the performance of the photon detectors operating in this wavelength range. To solve these problems, we have developed an electron-injection (EI) technique. The significance of this detection mechanism is that it can provide both high efficiency and high sensitivity at room temperature, a condition that is very difficult to achieve in conventional SWIR detectors. An EI detector offers an overall system-level sensitivity enhancement due to a feedback stabilized internal avalanche-free gain. Devices exhibit an excess noise of unity, operate in linear mode, require bias voltage of a few volts, and have a cutoff wavelength of 1700 nm. We review the material system, operating principle, and development of EI detectors. The shortcomings of the first-generation devices were addressed in the second-generation detectors. Measurement on second-generation devices showed a high-speed response of ˜6 ns rise time, low jitter of less than 20 ps, high amplification of more than 2000 (at optical power levels larger than a few nW), unity excess noise factor, and low leakage current (amplified dark current ˜10 nA at a bias voltage of -3 V and at room temperature. These characteristics make EI detectors a good candidate for high-resolution flash light detection and ranging (LiDAR) applications with millimeter scale depth resolution at longer ranges compared with conventional p-i-n diodes. Based on our experimentally measured device characteristics, we compare the performance of the EI detector with commercially available linear mode InGaAs avalanche photodiode (APD) as well as a p-i-n diode using a theoretical model. Flash LiDAR images obtained by our model show that the EI

  1. Dependencies of surface plasmon coupling effects on the p-GaN thickness of a thin-p-type light-emitting diode.

    Science.gov (United States)

    Su, Chia-Ying; Lin, Chun-Han; Yao, Yu-Feng; Liu, Wei-Heng; Su, Ming-Yen; Chiang, Hsin-Chun; Tsai, Meng-Che; Tu, Charng-Gan; Chen, Hao-Tsung; Kiang, Yean-Woei; Yang, C C

    2017-09-04

    The high performance of a light-emitting diode (LED) with the total p-type thickness as small as 38 nm is demonstrated. By increasing the Mg doping concentration in the p-AlGaN electron blocking layer through an Mg pre-flow process, the hole injection efficiency can be significantly enhanced. Based on this technique, the high LED performance can be maintained when the p-type layer thickness is significantly reduced. Then, the surface plasmon coupling effects, including the enhancement of internal quantum efficiency, increase in output intensity, reduction of efficiency droop, and increase of modulation bandwidth, among the thin p-type LED samples of different p-type thicknesses that are compared. These advantageous effects are stronger as the p-type layer becomes thinner. However, the dependencies of these effects on p-type layer thickness are different. With a circular mesa size of 10 μm in radius, through surface plasmon coupling, we achieve the record-high modulation bandwidth of 625.6 MHz among c-plane GaN-based LEDs.

  2. LHCb-VELO module production with n-side read-out on n- and p-type silicon substrates

    International Nuclear Information System (INIS)

    Affolder, A.; Bowcock, T.J.V.; Carrol, J.L.; Casse, G.; Huse, T.; Patel, G.D.; Rinnert, K.; Smith, N.A.; Turner, P.R.

    2007-01-01

    The modules for the Vertex Locator detector of the LHCb experiment represent a technical challenge for their complexity. The design of the sensors uses a complex double metal routing of the connection to the read-out strips and a high density of metal lines has to be accommodated in the module. The detectors are n-side read-out to be able to survive the highest radiation damage of any micro-strip sensor used in LHC experiments. The present choice is n-strips on n-type substrates (n-in-n geometry). Double-sided lithography is required, which impact on the cost of the devices and on the module construction. Moreover, the compact size of the hybrid imposes sophisticated technical solutions for cooling the electronics and the detector. The module construction and the possible benefits offered by the choice of p-type substrate detectors compared to the present n-in-n devices are here discussed in details

  3. Astrophysical s-factor measurements for {sup 1}20Te(p,{gamma}){sup 1}21I and {sup 1}20Te(p,n){sup 1}20I reactions; {sup 1}20Te(p,{gamma}){sup 1}21I ve {sup 1}20Te(p,n){sup 1}20I reaksiyonlarinin astrofiziksel s-factor oelcuemleri

    Energy Technology Data Exchange (ETDEWEB)

    Gueray, R T; Oezkan, N; Yalcin, C [Kocaeli University, Kocaeli (Turkey); Goerres, J; DeBoer, R; Palumbo, A; Tan, W P; Wiescher, M [University of Notre Dame, (United States); Fueloep, Zs; Somorjai, E [Institute of Nuclear Research ATOMKI (Hungary); Lee, H Y [Argonne National Laboratory (United States)

    2009-07-01

    Astrophysical S-factors for the {sup 1}20Te(p,{gamma}){sup 1}21I and {sup 1}20Te(p,n){sup 1}20I reactions have been measured in the effective center-of-mass energies between 2.47 MeV and 7.93 MeV. Experimental data have been compared with the Hauser-Fesbach statistical model calculations obtained with the model codes NON-SMOKER and TALYS. The discrepancies between the experimental results and calculations can mainly be attributed to the optical model potentials used in the codes.

  4. Efficiency for close geometries and extended sources of a p-type germanium detector with low-energy sensitivity

    International Nuclear Information System (INIS)

    Keyser, R.M.; Twomey, T.R.

    2007-01-01

    Typically, germanium detectors designed to have good sensitivity to low-energy photons and good efficiency at high energies are constructed from n-type crystals with a boron-implanted outer contact. These detectors usually exhibit inferior resolution and peak shape compared to ones made from p-type crystals. To overcome the resolution and peak-shape deficiencies, a new method of construction of a germanium detector element was developed. This has resulted in a gamma-ray detector with high sensitivity to photon energies from 14 keV to 2 MeV, while maintaining good resolution and peak shape over this energy range. Efficiency measurements, done according to the draft IEEE 325-2004 standard, show efficiencies typical of a GMX or n-type detector at low energies. The detectors are of large diameter suitable for counting extended samples such as filter papers. The Gaussian peak shape and good resolution typical of a GEM or p-type are maintained for the high count rates and peak separation needed for activation analysis. (author)

  5. Development of a neutron probe for soil humidity measurements using 6 LiI(Eu) detector

    International Nuclear Information System (INIS)

    Silva, Iran Jose Oliveira da; Khoury, Helen; Carneiro, Clemente J.G.

    2002-01-01

    A prototype of soil moisture probe was build using a crystal of 6 LiI(Eu) as a thermal neutron detector. Light pulses are produced by the exoergic nuclear reaction 6 Li (n,α) 3 He and transmitted through the light guide to a photomultiplier tube on the soil surface. Liquid light guides have several advantages when compared with bundle of glass fibers. First, liquid guides do not suffer from packing fraction losses spaces between fibers that cause reduced coupling efficiency. Second, repeated handling of liquid light guides does not result in the breakage typical of glass bundles, which reduces efficiency over time. Third, liquid guides have excellent UV transmission properties with a cut off the near infrared spectrum yielding an optimum transmission for visible applications. The major advantage of this prototype is the elimination of the electromagnetic interference inside of the soil. Tests were carried out aiming the improvement of electronic and technical viability aspects of neutrons probes. The soil moisture probe calibration curve was carried out in a drum of 60 cm diameter and 42 cm height. This drum was completely filled with an air dry soil. Counts in the center of the drum with the dry and saturated soils make possible to obtain the curves of the soil water content versus the normalized counts for two thermal neutron detectors. The medium value of the counts, the standard deviation and the number of counts were obtained for 6 LiI(Eu) and 3 He detectors, respectively for water, air dry, and saturated soil. From those measurements, a linear calibration curve was obtained for each of detectors. (author)

  6. Particle identification method in the CsI(Tl) scintillator used for the CHIMERA 4 pi detector

    CERN Document Server

    Alderighi, M; Basssini, R; Berceanu, I; Blicharska, J; Boiano, C; Borderie, B; Bougault, R; Bruno, M; Cali, C; Cardella, G; Cavallaro, S; D'Agostino, M; D'andrea, M; Dayras, R; De Filippo, E; Fichera, F; Geraci, E; Giustolisi, F; Grzeszczuk, A; Guardone, N; Guazzoni, P; Guinet, D; Iacono-Manno, M; Kowalski, S; La Guidara, E; Lanchais, A L; Lanzalone, G; Lanzanò, G; Le Neindre, N; Li, S; Maiolino, C; Majka, Z; Manfredi, G; Nicotra, D; Paduszynski, T; Pagano, A; Papa, M; Petrovici, C M; Piasecki, E; Pirrone, S; Politi, G; Pop, A; Porto, F; Rivet, M F; Rosato, E; Sacca, G; Sechi, G; Simion, V; Sperduto, M L; Steckmeyer, J C; Trifiró, A; Trimarchi, M; Urso, S; Vannini, G; Vigilante, M; Wilczynski, J; Wu, H; Xiao, Z; Zetta, L; Zipper, W

    2002-01-01

    The charged particle identification obtained by the analysis of signals coming from the CsI(Tl) detectors of the CHIMERA 4 pi heavy-ion detector is presented. A simple double-gate integration method, with the use of the cyclotron radiofrequency as reference time, results in low thresholds for isotopic particle identification. The dependence of the identification quality on the gate generation timing is discussed. Isotopic identification of light ions up to Beryllium is clearly seen. For the first time also the identification of Z=5 particles is observed. The identification of neutrons interacting with CsI(Tl) by (n,alpha) and (n,gamma) reactions is also discussed.

  7. N-isopropyl-p-[I123] iodoamphetamine single photon emission computed tomography (I123-IMP SPECT) and child neurology

    International Nuclear Information System (INIS)

    Tada, Hiroshi; Morooka, Keiichi; Arimoto, Kiyoshi; Matsuo, Takiko; Takagi, Kazue; Yanagawa, Etsuko

    1992-01-01

    We studied the clinical usefulness of I 123 -IMP SPECT in 50 pediatric patients with CNS disorders, which were categorized into the convulsive disorder group (n=20), the cerebrovascular disorder group (n=10), the acute encephalopathy or CNS infection group (n=10), the metabolic or degenerative disorder group (n=6), the congenital abnormality group (n=2) and the migraine group (n=2). The findings obtained were compared with those of cranial CT. I 123 -IMP SPECT revealed abnormal findings in 45 out of the 50 patients (90%), although cranial CT showed abnormal findings in only 24 patients (48%). This difference was statistically significant (p 123 -IMP SPECT showed focal abnormalities in 26 patients (93%). Moreover in many patients with focal neurological abnormalities, we found focal abnormalities of I 123 -IMP SPECT related with neurological abnormalities of the patients. From these findings, we think I 123 -IMP SPECT might be superior to CT scanning in examining a localized lesion. It was found that in many patients with focal abnormalities in CT scanning, I 123 -IMP SPECT showed larger abnormalities in CT scanning. By using I 123 -IMP SPECT we might be able to study the blood perfusional state surrounding the abnormal area shown by CT. In 3 patients with acute cerebrovascular disorders, I 123 -IMP SPECT revealed abnormal findings 3 to 11 days earlier than cranial CT. I 123 -IMP SPECT might be useful for early recognition of the pathological state. From these experiences, we concluded that I 123 -IMP SPECT was useful for studying the pathophysiology of CNS disorders in children. (author)

  8. Use of HgI2 as gamma radiation detector

    International Nuclear Information System (INIS)

    Perez Morales, J.M.

    1993-01-01

    The Mercuric Iodide (HgI 2 ) has become one of the most promising room temperature semiconductors for the construction of X and gamma radiation detectors. The classical methods of spectroscopy have not demonstrated to achieve optimum results with HgI 2 detectors, mainly due to its particular carrier transport properties. Several alternative spectroscopic methods developed in the last ten years are presented and commented, selecting for a complete study one of them: 'The Partial Charge Collection Method'. The transport properties of the carriers generated by the radiation in the detector is specially important for understanding the spectroscopic behaviour of the HgI 2 detectors. For a rigorous characterization of this transport, it has been studied a digital technique for the analysis of the electric pulses produced by the radiation. Theoretically, it has been developed a Monte Carlo simulation of the radiation detection and the electronic signal treatment processes with these detectors in the energy range of 60-1300 KeV. These codes are applied to the study of the The Partial Charge Collection Method and its comparison with gaussian methods. Experimentally, this digital techniques is used for the study of the transport properties of thin HgI 2 detectors. Special interest is given to the contribution of the slower carriers, the holes, obtaining some consequent of spectroscopic interest. Finally, it is presented the results obtained with the first detectors grown and mounted in CIEMAT with own technology. (author). 129 ref

  9. Reactor antineutrino detector iDREAM.

    Science.gov (United States)

    Gromov, M. B.; Lukyanchenko, G. A.; Novikova, G. J.; Obinyakov, B. A.; Oralbaev, A. Y.; Skorokhvatov, M. D.; Sukhotin, S. V.; Chepurnov, A. S.; Etenko, A. V.

    2017-09-01

    Industrial Detector for Reactor Antineutrino Monitoring (iDREAM) is a compact (≈ 3.5m 2) industrial electron antineutrino spectrometer. It is dedicated for remote monitoring of PWR reactor operational modes by neutrino method in real-time. Measurements of antineutrino flux from PWR allow to estimate a fuel mixture in active zone and to check the status of the reactor campaign for non-proliferation purposes. LAB-based gadolinium doped scintillator is exploited as a target. Multizone architecture of the detector with gamma-catcher surrounding fiducial volume and plastic muon veto above and below ensure high efficiency of IBD detection and background suppression. DAQ is based on Flash ADC with PSD discrimination algorithms while digital trigger is programmable and flexible due to FPGA. The prototype detector was started up in 2014. Preliminary works on registration Cerenkov radiation produced by cosmic muons were established with distilled water inside the detector in order to test electronic and slow control systems. Also in parallel a long-term measurements with different scintillator samples were conducted.

  10. Metabolic lung scanning with N-isopropyl-I-123-p-iodoamphetamine

    International Nuclear Information System (INIS)

    Touya, J.; Akber, S.F.; Rashimian, J.; Bennett, L.R.

    1982-01-01

    The mechanisms of uptake of N-Isopropyl-I-123-p-Iodoamphetamine (IMP) in the lung was studied in dogs. It has been concluded that this amine is taken in low specificity - high capacity endothelial receptors. Competitive effect of propranolol guanethidine, amphetamine and ketanine for the binding sites of IMP in the pulmonary endothelial cells was observed. These results show that IMP can be an agent for nonparticulate lung perfusion scans as well as for metabolic lung scans

  11. Photovoltaic X-ray detectors based on epitaxial GaAs structures

    Energy Technology Data Exchange (ETDEWEB)

    Achmadullin, R.A. [Institute of Radio Engineering and Electronics, Russian Academy of Sciences, 1 Ac. Vvedenski square, Fryazino 141190, Moscow region (Russian Federation); Artemov, V.V. [Shubnikov Institute of Crystallography, Russian Academy of Sciences, 59 Leninski pr., Moscow B-333, 117333 (Russian Federation); Dvoryankin, V.F. [Institute of Radio Engineering and Electronics, Russian Academy of Sciences, 1 Ac. Vvedenski square, Fryazino 141190, Moscow region (Russian Federation)]. E-mail: vfd217@ire216.msk.su; Dvoryankina, G.G. [Institute of Radio Engineering and Electronics, Russian Academy of Sciences, 1 Ac. Vvedenski square, Fryazino 141190, Moscow region (Russian Federation); Dikaev, Yu.M. [Institute of Radio Engineering and Electronics, Russian Academy of Sciences, 1 Ac. Vvedenski square, Fryazino 141190, Moscow region (Russian Federation); Ermakov, M.G. [Institute of Radio Engineering and Electronics, Russian Academy of Sciences, 1 Ac. Vvedenski square, Fryazino 141190, Moscow region (Russian Federation); Ermakova, O.N. [Institute of Radio Engineering and Electronics, Russian Academy of Sciences, 1 Ac. Vvedenski square, Fryazino 141190, Moscow region (Russian Federation); Chmil, V.B. [Scientific State Center, High Energy Physics Institute, Protvino, Moscow region (Russian Federation); Holodenko, A.G. [Scientific State Center, High Energy Physics Institute, Protvino, Moscow region (Russian Federation); Kudryashov, A.A.; Krikunov, A.I.; Petrov, A.G.; Telegin, A.A. [Institute of Radio Engineering and Electronics, Russian Academy of Sciences, 1 Ac. Vvedenski square, Fryazino 141190, Moscow region (Russian Federation); Vorobiev, A.P. [Scientific State Center, High Energy Physics Institute, Protvino, Moscow region (Russian Federation)

    2005-12-01

    A new type of the photovoltaic X-ray detector based on epitaxial p{sup +}-n-n'-n{sup +} GaAs structures which provides a high efficiency of charge collection in the non-bias operation mode at room temperature is proposed. The GaAs epitaxial structures were grown by vapor-phase epitaxy on heavily doped n{sup +}-GaAs(1 0 0) substrates. The absorption efficiency of GaAs X-ray detector is discussed. I-V and C-V characteristics of the photovoltaic X-ray detectors are analyzed. The built-in electric field profiles in the depletion region of epitaxial structures are measured by the EBIC method. Charge collection efficiency to {alpha}-particles and {gamma}-radiation are measured. The application of X-ray detectors is discussed.

  12. Field profile tailoring in a-Si:H radiation detectors

    International Nuclear Information System (INIS)

    Fujieda, I.; Cho, G.; Conti, M.; Drewery, J.; Kaplan, S.N.; Perez-Mendez, V.; Quershi, S.; Wildermuth, D.; Street, R.A.

    1990-03-01

    The capability of tailoring the field profile in reverse-biased a-Si:H diodes by doping and/or manipulating electrode shapes opens a way to many interesting device structures. Charge collection in a-Si:H radiation detectors is improved for high LET particle detection by inserting thin doped layers into the i-layer of the usual p-i-n diode. This buried p-i-n structure enables us to apply higher reverse-bias and the electric field is enhanced in the mid i-layer. Field profiles of the new structures are calculated and the improved charge collection process is discussed. Also discussed is the possibility of field profile tailoring by utilizing the fixed space charges in i-layers and/or manipulating electrode shapes of the reverse-biased p-i-n diodes. 10 refs., 7 figs

  13. N-isopropyl- sup 123 I-p-iodoamphetamine uptake mechanism in the lung - is it dependent on pH, lipophilicity or pK sub a

    Energy Technology Data Exchange (ETDEWEB)

    Akber, S.F. (Texas Medical School, Houston, TX (United States). Dept. of Radiology)

    1991-12-01

    The uptake and binding mechanism of biogenic amines in the lungs has been studied extensively with no conclusive results. The competition between N-isopropyl-{sup 123}I-p-iodo amphetamines ({sup 123}I-IMP) and propranolol and {sup 123}I-IMP and ketamine, in the lungs suggest that the pK{sub a} value of the biogenic amines has a significant role to play in the mechanism of uptake and retention of biogenic amines in the lungs. (orig.).

  14. Boosted Dark Matter Quarrying at Surface Neutrino Detectors arXiv

    CERN Document Server

    Kim, Doojin; Park, Jong-Chul; Shin, Seodong

    We propose the idea of "Earth Shielding" to reject cosmic-ray backgrounds, in the search for boosted dark matter at surface neutrino detectors, resulting in the enhancement of the signal-to-background ratio. The identification of cosmic-originating rare signals, especially lacking features, at surface detectors is often considered hopeless due to a vast amount of cosmic-ray-induced background, hence underground experiments are better motivated to avoid such a challenge. We claim that surface detectors can attain remarkable sensitivities to even featureless signals, once restricting to events coming through the Earth from the opposite side of the detector location for the signals leaving appreciable tracks from which the source direction is inferred. By doing so, potential backgrounds in the signal region of interest can be substantially suppressed. To validate our claim, we study experimental reaches at several surface experiments such as SBN Program (MicroBooNE, ICARUS, and SBND) and ProtoDUNE for elastic bo...

  15. Luminescence in amorphous silicon p-i-n diodes under double-injection dispersive-transport-controlled recombination

    International Nuclear Information System (INIS)

    Han, D.; Wang, K.; Yeh, C.; Yang, L.; Deng, X.; Von Roedern, B.

    1997-01-01

    The temperature and electric-field dependence of the forward bias current and the electroluminescence (EL) in hydrogenated amorphous silicon (a-Si:H) p-i-n and n-i-p diodes have been studied. Both the current and the EL efficiency temperature dependence show three regions depending on either hopping-controlled or multiple-trapping or ballistic transport mechanisms. Comparing the thermalization-controlled geminate recombination processes of photoluminescence to the features of EL, the differences can be explained by transport-controlled nongeminate recombination in trap-rich materials. copyright 1997 The American Physical Society

  16. Reactions of R(2)P-P(SiMe(3))Li with [(R'(3)P)(2)PtCl(2)]. A general and efficient entry to phosphanylphosphinidene complexes of platinum. Syntheses and structures of [(eta(2)-P=(i)Pr(2))Pt(p-Tol(3)P)(2)], [(eta(2)-P=(t)Bu(2))Pt(p-Tol(3)P)(2)], [{eta(2)-P=(N(i)Pr(2))(2)}Pt(p-Tol(3)P)(2)] and [{(Et(2)PhP)(2)Pt}(2)P(2)].

    Science.gov (United States)

    Domańska-Babul, Wioleta; Chojnacki, Jaroslaw; Matern, Eberhard; Pikies, Jerzy

    2009-01-07

    The reactions of lithium derivatives of diphosphanes R(2)P-P(SiMe(3))Li (R = (t)Bu, (i)Pr, Et(2)N and (i)Pr(2)N) with [(R'(3)P)(2)PtCl(2)] (R'(3)P = Et(3)P, Et(2)PhP, EtPh(2)P and p-Tol(3)P) proceed in a facile manner to afford side-on bonded phosphanylphosphinidene complexes of platinum [(eta(2)-P=R(2))Pt(PR'(3))(2)]. The related reactions of Ph(2)P-P(SiMe(3))Li with [(R'(3)P)(2)PtCl(2)] did not yield [(eta(2)-P=PPh(2))Pt(PR'(3))(2)] and resulted mainly in the formation of [{(R'(3)P)(2)Pt}(2)P(2)], Ph(2)P-PLi-PPh(2), (Me(3)Si)(2)PLi and (Me(3)Si)(3)P. Crystallographic data are reported for the compounds [(eta(2)-P=R(2))Pt(p-Tol(3)P)(2)] (R = (t)Bu, (i)Pr, ((i)Pr(2)N)(2)P) and for [{(Et(2)PhP)(2)Pt}(2)P(2)].

  17. X-ray photoemission analysis of chemically modified TlBr surfaces for improved radiation detectors

    International Nuclear Information System (INIS)

    Nelson, A. J.; Voss, L. F.; Beck, P. R.; Graff, R. T.; Conway, A. M.; Nikolic, R. J.; Payne, S. A.; Lee, J.-S.; Kim, H.; Cirignano, L.; Shah, K.

    2013-01-01

    We subjected device-grade TlBr to various chemical treatments used in room temperature radiation detector fabrication to determine the resulting surface composition and electronic structure. As-polished TlBr was treated separately with HCl, SOCl 2 , Br:MeOH and HF solutions. High-resolution photoemission measurements on the valence band electronic structure and Tl 4f, Br 3d, Cl 2p and S 2p core lines were used to evaluate surface chemistry and shallow heterojunction formation. Surface chemistry and valence band electronic structure were correlated with the goal of optimizing the long-term stability and radiation response

  18. Air-stable, solution-processed oxide p-n heterojunction ultraviolet photodetector.

    Science.gov (United States)

    Kim, Do Young; Ryu, Jiho; Manders, Jesse; Lee, Jaewoong; So, Franky

    2014-02-12

    Air-stable solution processed all-inorganic p-n heterojunction ultraviolet photodetector is fabricated with a high gain (EQE, 25 300%). Solution-processed NiO and ZnO films are used as p-type and n-type ultraviolet sensitizing materials, respectively. The high gain in the detector is due to the interfacial trap-induced charge injection that occurs at the ITO/NiO interface by photogenerated holes trapped in the NiO film. The gain of the detector is controlled by the post-annealing temperature of the solution-processed NiO films, which are studied by X-ray photoelectron spectroscopy (XPS).

  19. One-cm-thick Si detector at LHe temperature

    Energy Technology Data Exchange (ETDEWEB)

    Braggio, C. [Dipartimento di Fisica, Universita di Ferrara, Via Saragat 1, 44100 Ferrara (Italy)], E-mail: braggio@pd.infn.it; Bressi, G. [INFN, Sez. di Pavia, Via Bassi 6, 27100 Pavia (Italy); Carugno, G. [INFN, Sez. di Padova, Via Marzolo 8, 35131 Padova (Italy); Galeazzi, G. [Laboratori Nazionali di Legnaro, Via dell' Universita 1, 35020 Legnaro (Italy); Serafin, A. [Dipartimento di Fisica, Universita di Padova, Via Marzolo 8, 35131 Padova (Italy)

    2007-10-11

    A silicon p-i-n diode of thickness 1 cm has been studied experimentally at liquid helium temperature. This preliminary study is aimed at the construction of a much bigger detector to detect low energy neutrino events.

  20. One-cm-thick Si detector at LHe temperature

    International Nuclear Information System (INIS)

    Braggio, C.; Bressi, G.; Carugno, G.; Galeazzi, G.; Serafin, A.

    2007-01-01

    A silicon p-i-n diode of thickness 1 cm has been studied experimentally at liquid helium temperature. This preliminary study is aimed at the construction of a much bigger detector to detect low energy neutrino events

  1. Microtextured Silicon Surfaces for Detectors, Sensors & Photovoltaics

    Energy Technology Data Exchange (ETDEWEB)

    Carey, JE; Mazur, E

    2005-05-19

    With support from this award we studied a novel silicon microtexturing process and its application in silicon-based infrared photodetectors. By irradiating the surface of a silicon wafer with intense femtosecond laser pulses in the presence of certain gases or liquids, the originally shiny, flat surface is transformed into a dark array of microstructures. The resulting microtextured surface has near-unity absorption from near-ultraviolet to infrared wavelengths well below the band gap. The high, broad absorption of microtextured silicon could enable the production of silicon-based photodiodes for use as inexpensive, room-temperature multi-spectral photodetectors. Such detectors would find use in numerous applications including environmental sensors, solar energy, and infrared imaging. The goals of this study were to learn about microtextured surfaces and then develop and test prototype silicon detectors for the visible and infrared. We were extremely successful in achieving our goals. During the first two years of this award, we learned a great deal about how microtextured surfaces form and what leads to their remarkable optical properties. We used this knowledge to build prototype detectors with high sensitivity in both the visible and in the near-infrared. We obtained room-temperature responsivities as high as 100 A/W at 1064 nm, two orders of magnitude higher than standard silicon photodiodes. For wavelengths below the band gap, we obtained responsivities as high as 50 mA/W at 1330 nm and 35 mA/W at 1550 nm, close to the responsivity of InGaAs photodiodes and five orders of magnitude higher than silicon devices in this wavelength region.

  2. Enhanced power conversion efficiency of p-i-n type organic solar cells by employing a p-layer of palladium phthalocyanine

    KAUST Repository

    Kim, Inho; Haverinen, Hanna M.; Li, Jian; Jabbour, Ghassan E.

    2010-01-01

    We demonstrate an enhancement in the power conversion efficiency (PCE) of p-i-n type organic solar cells consisting of zinc phthalocyanine (ZnPc) and fullerene (C60) using a p-layer of palladium phthalocyanine (PdPc). Solar cells employing three

  3. A monolithically integrated detector-preamplifier on high-resistivity silicon

    International Nuclear Information System (INIS)

    Holland, S.; Spieler, H.

    1990-02-01

    A monolithically integrated detector-preamplifier on high-resistivity silicon has been designed, fabricated and characterized. The detector is a fully depleted p-i-n diode and the preamplifier is implemented in a depletion-mode PMOS process which is compatible with detector processing. The amplifier is internally compensated and the measured gain-bandwidth product is 30 MHz with an input-referred noise of 15 nV/√Hz in the white noise regime. Measurements with an Am 241 radiation source yield an equivalent input noise charge of 800 electrons at 200 ns shaping time for a 1.4 mm 2 detector with on-chip amplifier in an experimental setup with substantial external pickup

  4. Development of fountain detectors for spectroscopy of secondary electron in SEM

    Energy Technology Data Exchange (ETDEWEB)

    Agemura, Toshihide [University of Tsukuba (Japan); Iwai, Hideo [National Institute for Materials Science, Tsukuba (Japan); Sekiguchi, Takashi [University of Tsukuba (Japan); National Institute for Materials Science, Tsukuba (Japan)

    2017-07-15

    To image the variation of surface potential in semiconductors, energy selective secondary electron detector, named fountain detector (FD), was developed. Two types of grids, planar and spherical, were designed and the superiority of latter was demonstrated. The p-n junction of 4H-SiC was observed using spherical FD and the image was much clear than that using conventional detector. (copyright 2017 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  5. Optically transparent ZnO-based n-i-p ultraviolet photodetectors

    International Nuclear Information System (INIS)

    Wang, Kai; Vygranenko, Yuriy; Nathan, Arokia

    2007-01-01

    An optically transparent tin-doped indium oxide/ZnO/NiO n-i-p heterostructure photodiode was fabricated by ion beam assisted e-beam evaporation. The diode clearly demonstrates rectifying current-voltage (J-V) characteristics with a current rectification ratio up to 10 4 at bias ± 2 V and a low reverse current of ∼ 100 nA/cm 2 at - 5 V. Analysis of J-V characteristics including time dependence of the dark current shows that the leakage current at low biases is attributed to thermal generation via defect states, and at high biases, field-enhanced carrier generation from the ZnO layer dominates. Spectral response and linearity measurements indicate that such a diode is particularly suitable for low level of ultraviolet detection

  6. Synthesis of N-isopropyl p-[123I]iodoamphetamine via organoborane chemistry

    International Nuclear Information System (INIS)

    Kabalka, G.W.; Varma, R.S.; Gai, Y.

    1990-01-01

    Iodine-123 labeled amphetamines have proven to be excellent cerebral perfusion tracers. The radioiodination of aromatic amines is generally achieved via high temperature substitution reactions which are prone to side reactions. The authors report that N-isopropyl p-[ 123 I]iodoamphetamine, and other iodophenylamines, are readily synthesized from the corresponding air stable, boronic acids. The reaction is based on the no-carrier-added radioiodination sequence developed in their laboratory

  7. Bulk GaN alpha-particle detector with large depletion region and improved energy resolution

    Energy Technology Data Exchange (ETDEWEB)

    Xu, Qiang; Mulligan, Padhraic [Nuclear Engineering Program, Department of Mechanical and Aerospace Engineering, The Ohio State University, Columbus, OH 43210 (United States); Wang, Jinghui [Department of Radiology, Stanford University, 1201 Welch Rd, Stanford, CA 94305 (United States); Chuirazzi, William [Nuclear Engineering Program, Department of Mechanical and Aerospace Engineering, The Ohio State University, Columbus, OH 43210 (United States); Cao, Lei, E-mail: cao.152@osu.edu [Nuclear Engineering Program, Department of Mechanical and Aerospace Engineering, The Ohio State University, Columbus, OH 43210 (United States)

    2017-03-21

    An alpha-particle detector was fabricated using a freestanding n-type bulk GaN wafer with a Au/Ni/GaN sandwich Schottky structure. Current–voltage measurements at room temperature revealed a Schottky contact with a leakage current of 7.53±0.3 nA at a reverse bias of 200 V. The detector had a large depletion depth that can capture much of the energy from 5.486 MeV alpha particles emitted from a {sup 241}Am source. The resolution of its alpha-particle energy spectrum was improved to 2.2±0.2% at 5.486 MeV under a bias of 550 V. This superior resolution was attributed to the shortening of the carrier transit time and the large energy deposition within the large depletion depth, i.e., 27 µm at −550 V, which all resulted in a more complete charge collection. A model developed using the ATLAS simulation framework from Silvaco Inc. was employed to study the charge collection process. The simulation results were found to agree closely with the experimental results. This detector will be beneficial for research at neutron scattering facilities, the International Thermonuclear Experimental Reactor, and the Large Hadron Collider, among other institutions, where the Si-based charged particle detectors could be quickly degraded in an intense radiation field. - Highlights: • An alpha-particle detector based on a Schottky-structured GaN wafer was tested. • The detector's large depletion depth enables fuller energy spectra to be obtained. • The best resolution yet attained in GaN alpha-particle spectrometry was achieved. • The detector's short carrier transit time resulted in improved charge collection. • This detector is usable in extreme conditions, including intense radiation fields.

  8. Analysis of the High Conversion Efficiencies β-FeSi2 and BaSi2 n-i-p Thin Film Solar Cells

    International Nuclear Information System (INIS)

    Huang, J.Sh.; Lee, K.W.; Tseng, Y.H.

    2014-01-01

    Both β-FeSi 2 and BaSi 2 are silicides and have large absorption coefficients; thus they are very promising Si-based new materials for solar cell applications. In this paper, the dc I-V characteristics of n-Si/i-βFeSi 2 /p-Si and n-Si/i-BaSi 2 /p-Si thin film solar cells are investigated by solving the charge transport equations with optical generations. The diffusion current densities of free electron and hole are calculated first. Then the drift current density in the depletion regions is obtained. The total current density is the sum of diffusion and drift current densities. The conversion efficiencies are obtained from the calculated I-V curves. The optimum conversion efficiency of n-Si/i-βFeSi 2 /p-Si thin film solar cell is 27.8% and that of n-Si/i-BaSi 2 /p-Si thin film solar cell is 30.4%, both are larger than that of Si n-i-p solar cell (η is 20.6%). These results are consistent with their absorption spectrum. The calculated conversion efficiency of Si n-i-p solar cell is consistent with the reported researches. Therefore, these calculation results are valid in this work.

  9. Analysis of the High Conversion Efficiencies β-FeSi2 and BaSi2 n-i-p Thin Film Solar Cells

    Directory of Open Access Journals (Sweden)

    Jung-Sheng Huang

    2014-01-01

    Full Text Available Both β-FeSi2 and BaSi2 are silicides and have large absorption coefficients; thus they are very promising Si-based new materials for solar cell applications. In this paper, the dc I-V characteristics of n-Si/i-βFeSi2/p-Si and n-Si/i-BaSi2/p-Si thin film solar cells are investigated by solving the charge transport equations with optical generations. The diffusion current densities of free electron and hole are calculated first. Then the drift current density in the depletion regions is obtained. The total current density is the sum of diffusion and drift current densities. The conversion efficiencies are obtained from the calculated I-V curves. The optimum conversion efficiency of n-Si/i-βFeSi2/p-Si thin film solar cell is 27.8% and that of n-Si/i-BaSi2/p-Si thin film solar cell is 30.4%, both are larger than that of Si n-i-p solar cell (η is 20.6%. These results are consistent with their absorption spectrum. The calculated conversion efficiency of Si n-i-p solar cell is consistent with the reported researches. Therefore, these calculation results are valid in this work.

  10. Production of 16N and obtaining of its gamma spectrum in order to calibrate detectors or determination of fluorine in geological specimens

    International Nuclear Information System (INIS)

    Rey-Ronco, M.A.; Alonso-Sanchez, T.; Castro-Garcia, M.P.

    2010-01-01

    In this paper, we show a procedure for producing 16 N and a method to obtain its gamma spectrum with a NaI(Tl) detector. We also demonstrate the interest of this radioactive element for the purpose of NaI(Tl) detector calibration and for the determination of fluorine in geological specimens using an Alpha Beryllium neutron source. This work consists of a theoretical study which analyzes the characteristics of 16 N and nuclear reactions that originate from an Americium Beryllium source of 1Ci activity. We justify our choice of reaction 19 F(n,α) 16 N and the use of fluorspar as a source of fluorine. The mathematical procedure followed to obtain the gamma rays spectrum produced by 16 N in a NaI(Tl) detector is shown.

  11. Nano-roughening n-side surface of AlGaInP-based LEDs for increasing extraction efficiency

    International Nuclear Information System (INIS)

    Lee, Y.J.; Lu, T.C.; Kuo, H.C.; Wang, S.C.; Hsu, T.C.; Hsieh, M.H.; Jou, M.J.; Lee, B.J.

    2007-01-01

    A chemical wet etching technique is presented to form a nano-roughened surface with triangle-like morphology on n-side-up AlGaInP-based LEDs fabricated by adopting adhesive layer bonding scheme. A simple and commonly used H 3 PO 4 -based solution was applied for chemical wet etching. The morphology of nano-roughened surfaces is analyzed by the atomic force microscope (AFM) and significantly related to the enhancement factor of the LED output power. The output power shows 80% increase after optimizing the nano-roughened morphology of n-side surface, as compared to the ordinary flat surface LED

  12. Predictable quantum efficient detector based on n-type silicon photodiodes

    Science.gov (United States)

    Dönsberg, Timo; Manoocheri, Farshid; Sildoja, Meelis; Juntunen, Mikko; Savin, Hele; Tuovinen, Esa; Ronkainen, Hannu; Prunnila, Mika; Merimaa, Mikko; Tang, Chi Kwong; Gran, Jarle; Müller, Ingmar; Werner, Lutz; Rougié, Bernard; Pons, Alicia; Smîd, Marek; Gál, Péter; Lolli, Lapo; Brida, Giorgio; Rastello, Maria Luisa; Ikonen, Erkki

    2017-12-01

    The predictable quantum efficient detector (PQED) consists of two custom-made induced junction photodiodes that are mounted in a wedged trap configuration for the reduction of reflectance losses. Until now, all manufactured PQED photodiodes have been based on a structure where a SiO2 layer is thermally grown on top of p-type silicon substrate. In this paper, we present the design, manufacturing, modelling and characterization of a new type of PQED, where the photodiodes have an Al2O3 layer on top of n-type silicon substrate. Atomic layer deposition is used to deposit the layer to the desired thickness. Two sets of photodiodes with varying oxide thicknesses and substrate doping concentrations were fabricated. In order to predict recombination losses of charge carriers, a 3D model of the photodiode was built into Cogenda Genius semiconductor simulation software. It is important to note that a novel experimental method was developed to obtain values for the 3D model parameters. This makes the prediction of the PQED responsivity a completely autonomous process. Detectors were characterized for temperature dependence of dark current, spatial uniformity of responsivity, reflectance, linearity and absolute responsivity at the wavelengths of 488 nm and 532 nm. For both sets of photodiodes, the modelled and measured responsivities were generally in agreement within the measurement and modelling uncertainties of around 100 parts per million (ppm). There is, however, an indication that the modelled internal quantum deficiency may be underestimated by a similar amount. Moreover, the responsivities of the detectors were spatially uniform within 30 ppm peak-to-peak variation. The results obtained in this research indicate that the n-type induced junction photodiode is a very promising alternative to the existing p-type detectors, and thus give additional credibility to the concept of modelled quantum detector serving as a primary standard. Furthermore, the manufacturing of

  13. Performances of epitaxial GaAs p/i/n structures for X-ray imaging

    CERN Document Server

    Sun, G C; Haguet, V; Pesant, J C; Montagne, J P; Lenoir, M; Bourgoin, J C

    2002-01-01

    We have realized 150 mu mx150 mu m pixels using ion implantation followed by photolithography, metallic contact evaporation and chemical etching on about 200 mu m thick GaAs epitaxial layers. These layers were grown on n sup + and p sup + substrates by an already described Chemical Reaction technique, which is economical, non-polluting and can attain growth rates of several microns per minute. The mesa p sup + /i/n sup + pixel were characterized using current-voltage and capacitance-voltage measurements. The charge collection efficiency was evaluated by photoconductivity measurements under typical conditions of standard radiological examinations.

  14. Cross sections and reaction rates for 23Na(p,n) 23Mg, 27Al(p,n) 27Si, 27Al(α,n) 30P, 29Si(α,n) 32S, and 30Si(α,n) 33S

    International Nuclear Information System (INIS)

    Flynn, D.S.; Sekharan, K.K.; Hiller, B.A.; Laumer, H.; Weil, J.L.; Gabbard, F.

    1978-01-01

    The total neutron production cross sections for the 23 Na(p,n) 23 Mg, 27 Al(p,n) 27 Si, 27 Al(α,n) 30 P, 29 Si(α,n) 32 S, and 30 Si(α,n) 33 S reactions have been measured for bombarding energies from threshold to 6.3 MeV. The neutron detector was a 60-cm diameter sphere of polyethylene with eight 10 BF 3 counters and was insensitive to the angle and energy of the emitted neutrons. Cross sections for inverse reactions have been obtained using the principle of detailed balance. The data have been used to determine parameters for statistical model calculations to facilitate extrapolation of cross sections to higher bombarding energies. These reactions are relevant to problems of nucleosynthesis and stellar evolution and to studies of radiation damage. Nucleosynthesis reaction rates, N/sub A/(sigmav), were determined for the reactions studied and are tabulated for temperatures ranging from 0.4 x 10 9 to 10.0 x 10 9 K

  15. Development of AC-coupled, poly-silicon biased, p-on-n silicon strip detectors in India for HEP experiments

    Science.gov (United States)

    Jain, Geetika; Dalal, Ranjeet; Bhardwaj, Ashutosh; Ranjan, Kirti; Dierlamm, Alexander; Hartmann, Frank; Eber, Robert; Demarteau, Marcel

    2018-02-01

    P-on-n silicon strip sensors having multiple guard-ring structures have been developed for High Energy Physics applications. The study constitutes the optimization of the sensor design, and fabrication of AC-coupled, poly-silicon biased sensors of strip width of 30 μm and strip pitch of 55 μm. The silicon wafers used for the fabrication are of 4 inch n-type, having an average resistivity of 2-5 k Ω cm, with a thickness of 300 μm. The electrical characterization of these detectors comprises of: (a) global measurements of total leakage current, and backplane capacitance; (b) strip and voltage scans of strip leakage current, poly-silicon resistance, interstrip capacitance, interstrip resistance, coupling capacitance, and dielectric current; and (c) charge collection measurements using ALiBaVa setup. The results of the same are reported here.

  16. Charge exchange reactions and the efficiency of solar neutrino detectors

    International Nuclear Information System (INIS)

    Austin, S.M.; Anantaraman, N.; Love, W.G.

    1994-01-01

    The efficiencies of solar neutrino detectors are often based in part on weak interaction strengths determined by (p,n) and other charge exchange reactions. Although the (p,n) determinations are surprisingly good, it is shown that they may be inaccurate for important Gamow-Teller transitions whose strengths are a small fraction of the sum rule limit. This emphasizes the importance of direct calibration with ν sources for detectors such as 127 I and 115 In where direct β-decay information cannot be obtained. It may also bear on recent attempts to compare charge exchange and beta decay in the mass-37 system

  17. Review of surface dose detectors in radiotherapy

    LENUS (Irish Health Repository)

    O'Shea, E.

    2006-11-20

    Several instruments have been used to measure absorbed radiation dose under non-electronic equilibrium conditions, such as in the build-up region or near the interface between two different media, including the surface. Many of these detectors are discussed in this paper. A common method of measuring the absorbed dose distribution and electron contamination in the build-up region of high-energy beams for radiation therapy is by means of parallel-plate ionisation chambers. Thermoluminescent dosimeters (TLDs), diodes and radiographic film have also been used to obtain surface dose measurements. The diamond detector was used recently by the author in an investigation on the effects of beam-modifying devices on skin dose and it is also described in this report

  18. Low frequency noise in semiconductor detectors

    International Nuclear Information System (INIS)

    Stojanovic, M.; Marjanovic, N.

    1998-01-01

    Noise characteristics of surface-barrier detectors based on Au contacts on n-Si were measured and analyzed. The metal layers were deposited by evaporation to 40-100 nm thickness. Standard surface-barrier detectors based on Au/Si structures are known to have favorable characteristics, but they tend to degrade with aging and under severe working conditions. Degradation is particularly related to the increase in noise level, leakage current and the reduction of detector efficiency and resolution. Therefore, practical applications of surface-barrier detectors demand their constant upgrading. Improvements of detector properties are concentrated mainly on the front surface and front (rectifying) contact. The aim was to improve the noise characteristics of the surface-barrier structures and retain the favorable detector properties of the Au/Si system. (authors)

  19. Persistent photoeffects in p-i-n GaAs/AlGaAs heterostructures with double quantum wells

    DEFF Research Database (Denmark)

    Dorozhkin, S.I.; Timofeev, V.B.; Hvam, Jørn Märcher

    2001-01-01

    Abrupt changes in the capacitance between the p and n regions were observed in a planar p-i-n GaAs/AlGaAs heterostructure with two tunneling-coupled quantum wells exposed to laser irradiation (lambda = 633 nm). These changes can be caused by variations in both temperature (in the vicinity of T...

  20. Study of $ \\bar{p} $ and $ \\bar{n} $ annihilations at LEAR with OBELIX, a large acceptance and high resolution detector based on the Open Axial Field Spectrometer

    CERN Multimedia

    2002-01-01

    % PS201 Study of $\\bar{p}$ and $\\bar{n}$ annihilations at LEAR with OBELIX, a large acceptance and high resolution detector based on the Open Axial Field Spectrometer \\\\ \\\\OBELIX is designed to study exclusive final states of antiproton and antineutron annihilations at low energies with protons and nuclei. \\\\ \\\\The physics motivations of the experiment are:\\\\ \\\\\\begin{itemize} \\item (gg, ggg), hybrids ($ q \\bar{q} g $), multiquarks ($ q q \\bar{q} \\bar{q} $) and light mesons ($ q \\bar{q} $) produced in $ N \\bar{N} $ annihilations and study of their spectroscopy and decays. Also broad structures will be searched for by comparing identical decay modes in exclusive final states of the same type occuring from initial states with different angular momentum or isospin. \\item Study of the dynamics of $ N \\bar{N} $ interactions and of the dependence of the final and intermediate resonant states of annihilation upon the quantum numbers of the initial $ N \\bar{N} $ state (angular momentum: S and P-wave in $\\bar{p}p $ at...

  1. High spatial resolution radiation detectors based on hydrogenated amorphous silicon and scintillator

    International Nuclear Information System (INIS)

    Jing, T.; Lawrence Berkeley Lab., CA

    1995-05-01

    Hydrogenated amorphous silicon (a-Si:H) as a large-area thin film semiconductor with ease of doping and low-cost fabrication capability has given a new impetus to the field of imaging sensors; its high radiation resistance also makes it a good material for radiation detectors. In addition, large-area microelectronics based on a-Si:H or polysilicon can be made with full integration of peripheral circuits, including readout switches and shift registers on the same substrate. Thin a-Si:H p-i-n photodiodes coupled to suitable scintillators are shown to be suitable for detecting charged particles, electrons, and X-rays. The response speed of CsI/a-Si:H diode combinations to individual particulate radiation is limited by the scintillation light decay since the charge collection time of the diode is very short (< 10ns). The reverse current of the detector is analyzed in term of contact injection, thermal generation, field enhanced emission (Poole-Frenkel effect), and edge leakage. A good collection efficiency for a diode is obtained by optimizing the p layer of the diode thickness and composition. The CsI(Tl) scintillator coupled to an a-Si:H photodiode detector shows a capability for detecting minimum ionizing particles with S/N ∼20. In such an arrangement a p-i-n diode is operated in a photovoltaic mode (reverse bias). In addition, a p-i-n diode can also work as a photoconductor under forward bias and produces a gain yield of 3--8 for shaping times of 1 micros. The mechanism of the formation of structured CsI scintillator layers is analyzed. Initial nucleation in the deposited layer is sensitive to the type of substrate medium, with imperfections generally catalyzing nucleation. Therefore, the microgeometry of a patterned substrate has a significant effect on the structure of the CsI growth

  2. High spatial resolution radiation detectors based on hydrogenated amorphous silicon and scintillator

    Energy Technology Data Exchange (ETDEWEB)

    Jing, Tao [Univ. of California, Berkeley, CA (United States). Dept. of Engineering-Nuclear Engineering

    1995-05-01

    Hydrogenated amorphous silicon (a-Si:H) as a large-area thin film semiconductor with ease of doping and low-cost fabrication capability has given a new impetus to the field of imaging sensors; its high radiation resistance also makes it a good material for radiation detectors. In addition, large-area microelectronics based on a-Si:H or polysilicon can be made with full integration of peripheral circuits, including readout switches and shift registers on the same substrate. Thin a-Si:H p-i-n photodiodes coupled to suitable scintillators are shown to be suitable for detecting charged particles, electrons, and X-rays. The response speed of CsI/a-Si:H diode combinations to individual particulate radiation is limited by the scintillation light decay since the charge collection time of the diode is very short (< 10ns). The reverse current of the detector is analyzed in term of contact injection, thermal generation, field enhanced emission (Poole-Frenkel effect), and edge leakage. A good collection efficiency for a diode is obtained by optimizing the p layer of the diode thickness and composition. The CsI(Tl) scintillator coupled to an a-Si:H photodiode detector shows a capability for detecting minimum ionizing particles with S/N ~20. In such an arrangement a p-i-n diode is operated in a photovoltaic mode (reverse bias). In addition, a p-i-n diode can also work as a photoconductor under forward bias and produces a gain yield of 3--8 for shaping times of 1 {micro}s. The mechanism of the formation of structured CsI scintillator layers is analyzed. Initial nucleation in the deposited layer is sensitive to the type of substrate medium, with imperfections generally catalyzing nucleation. Therefore, the microgeometry of a patterned substrate has a significant effect on the structure of the CsI growth.

  3. Systematic of signature inversion in (h11/2)p ⊗ (i13/2)n for odd–odd ...

    Indian Academy of Sciences (India)

    11. /2)p. ⊗. (i13. /2)n. }fo r rare earth s are rep o rted . Each b o x lists th e fo llowin g in fo rmatio n. : T o p row. : K. (observed),. Ic. (inversion),. M iddle row. : K and confi guratio n fro m systematic,. B otto m row. : low est observed spin and its energy in. keV . xxx denotes unknow n energy. C onfi gurations are abbrev iated as:p.

  4. Determination of the k{sub Q{sub c{sub l{sub i{sub n,Q{sub m{sub s{sub r}{sup f{sub c}{sub l}{sub i}{sub n},f{sub m}{sub s}{sub r}}}}}}}}} correction factors for detectors used with an 800 MU/min CyberKnife{sup ®} system equipped with fixed collimators and a study of detector response to small photon beams using a Monte Carlo method

    Energy Technology Data Exchange (ETDEWEB)

    Moignier, C., E-mail: cyril.moignier@free.fr; Huet, C. [Institut de Radioprotection et de Sûreté Nucléaire (IRSN), Service de Dosimétrie Externe, 92260, Fontenay-aux-Roses (France); Makovicka, L. [IRMA/CE UMR 6249 CNRS, Université de Franche-Comté, 25200, Montbéliard (France)

    2014-07-15

    Purpose: In a previous work, output ratio (OR{sub det}) measurements were performed for the 800 MU/min CyberKnife{sup ®} at the Oscar Lambret Center (COL, France) using several commercially available detectors as well as using two passive dosimeters (EBT2 radiochromic film and micro-LiF TLD-700). The primary aim of the present work was to determine by Monte Carlo calculations the output factor in water (OF{sub MC,w}) and the k{sub Q{sub c{sub l{sub i{sub n,Q{sub m{sub s{sub r}{sup f{sub c}{sub l}{sub i}{sub n},f{sub m}{sub s}{sub r}}}}}}}}} correction factors. The secondary aim was to study the detector response in small beams using Monte Carlo simulation. Methods: The LINAC head of the CyberKnife{sup ®} was modeled using the PENELOPE Monte Carlo code system. The primary electron beam was modeled using a monoenergetic source with a radial gaussian distribution. The model was adjusted by comparisons between calculated and measured lateral profiles and tissue-phantom ratios obtained with the largest field. In addition, the PTW 60016 and 60017 diodes, PTW 60003 diamond, and micro-LiF were modeled. Output ratios with modeled detectors (OR{sub MC,det}) and OF{sub MC,w} were calculated and compared to measurements, in order to validate the model for smallest fields and to calculate k{sub Q{sub c{sub l{sub i{sub n,Q{sub m{sub s{sub r}{sup f{sub c}{sub l}{sub i}{sub n},f{sub m}{sub s}{sub r}}}}}}}}} correction factors, respectively. For the study of the influence of detector characteristics on their response in small beams; first, the impact of the atomic composition and the mass density of silicon, LiF, and diamond materials were investigated; second, the material, the volume averaging, and the coating effects of detecting material on the detector responses were estimated. Finally, the influence of the size of silicon chip on diode response was investigated. Results: Looking at measurement ratios (uncorrected output factors) compared to the OF{sub MC,w}, the PTW 60016

  5. Characterisation of Al{sub 0.52}In{sub 0.48}P mesa p-i-n photodiodes for X-ray photon counting spectroscopy

    Energy Technology Data Exchange (ETDEWEB)

    Butera, S., E-mail: S.Butera@sussex.ac.uk; Lioliou, G.; Barnett, A. M. [Semiconductor Materials and Device Laboratory, School of Engineering and Informatics, University of Sussex, Brighton BN1 9QT (United Kingdom); Krysa, A. B. [EPSRC National Centre for III-V Technologies, University of Sheffield, Mappin Street, Sheffield S1 3JD (United Kingdom)

    2016-07-14

    Results characterising the performance of thin (2 μm i-layer) Al{sub 0.52}In{sub 0.48}P p{sup +}-i-n{sup +} mesa photodiodes for X-ray photon counting spectroscopy are reported at room temperature. Two 200 μm diameter and two 400 μm diameter Al{sub 0.52}In{sub 0.48}P p{sup +}-i-n{sup +} mesa photodiodes were studied. Dark current results as a function of applied reverse bias are shown; dark current densities <3 nA/cm{sup 2} were observed at 30 V (150 kV/cm) for all the devices analysed. Capacitance measurements as a function of applied reverse bias are also reported. X-ray spectra were collected using 10 μs shaping time, with the device illuminated by an {sup 55}Fe radioisotope X-ray source. Experimental results showed that the best energy resolution (FWHM) achieved at 5.9 keV was 930 eV for the 200 μm Al{sub 0.52}In{sub 0.48}P diameter devices, when reverse biased at 15 V. System noise analysis was also carried out, and the different noise contributions were computed.

  6. Production of {sup 16}N and obtaining of its gamma spectrum in order to calibrate detectors or determination of fluorine in geological specimens

    Energy Technology Data Exchange (ETDEWEB)

    Rey-Ronco, M.A., E-mail: rey@uniovi.e [Departamento de Energia, Universidad de Oviedo, 33004 Oviedo (Spain); Alonso-Sanchez, T., E-mail: tjalonso@uniovi.e [Departamento de Explotacion y Prospeccion de Minas, Universidad de Oviedo, 33004 Oviedo (Spain); Castro-Garcia, M.P., E-mail: UO21947@uniovi.e [Departamento de Explotacion y Prospeccion de Minas, Universidad de Oviedo, 33004 Oviedo (Spain)

    2010-09-15

    In this paper, we show a procedure for producing {sup 16}N and a method to obtain its gamma spectrum with a NaI(Tl) detector. We also demonstrate the interest of this radioactive element for the purpose of NaI(Tl) detector calibration and for the determination of fluorine in geological specimens using an Alpha Beryllium neutron source. This work consists of a theoretical study which analyzes the characteristics of {sup 16}N and nuclear reactions that originate from an Americium Beryllium source of 1Ci activity. We justify our choice of reaction {sup 19}F(n,{alpha}){sup 16}N and the use of fluorspar as a source of fluorine. The mathematical procedure followed to obtain the gamma rays spectrum produced by {sup 16}N in a NaI(Tl) detector is shown.

  7. Protocolul persan de la Cirus cel Mare până la Chosroes I

    Directory of Open Access Journals (Sweden)

    Orest TĂRÎȚĂ

    2017-12-01

    Full Text Available În articol se abordează unele aspecte - cheie ale protocolului și ceremonialului persan din tim-pul celor patru perioade istorice ale statalității persane începând cu anul 700 până la Hristos și finalizând cu anul 651 ale erei creștine. Prin prisma analizei este trecută domnia lui Cirus al II-lea cel Mare – fondatorul Imperiului Per-san, care a introdus la curtea sa protocolul și ceremonialul pentru a-i debarasa pe persani de obiceiurile barbare și a-i familiariza cu subtilitățile bunelor maniere. Un spațiu aparte este rezervat perioadei sasanide (224 î. Hr. - 651, când curtea regală este con¬dusă de șeful de protocol, situat pe primul loc la curtea șahinșahului, fiind urmat de succesorul la tron, șeful regimentului de „nemuritori” și alte demnități; este descrisă scena încoronării lui Șapur I și ordinea ierarhică a înalților demnitari regali de la curtea sa, primirea cu onoruri a ambasa¬dorilor străini la curte și alaiurile publice ale șahinșahului, care urmăreau nu altceva decât să perpetueze măreția Marelui Imperiu, atât în interior, cât și în relațiile cu țările vecine.

  8. Ultra-fast HPM detectors improve NAD(P)H FLIM

    Science.gov (United States)

    Becker, Wolfgang; Wetzker, Cornelia; Benda, Aleš

    2018-02-01

    Metabolic imaging by NAD(P)H FLIM requires the decay functions in the individual pixels to be resolved into the decay components of bound and unbound NAD(P)H. Metabolic information is contained in the lifetime and relative amplitudes of the components. The separation of the decay components and the accuracy of the amplitudes and lifetimes improves substantially by using ultra-fast HPM-100-06 and HPM-100-07 hybrid detectors. The IRF width in combination with the Becker & Hickl SPC-150N and SPC-150NX TCSPC modules is less than 20 ps. An IRF this fast does not interfere with the fluorescence decay. The usual deconvolution process in the data analysis then virtually becomes a simple curve fitting, and the parameters of the NAD(P)H decay components are obtained at unprecedented accuracy.

  9. Abdominal multi-detector row CT: Effectiveness of determining contrast medium dose on basis of body surface area

    International Nuclear Information System (INIS)

    Onishi, Hiromitsu; Murakami, Takamichi; Kim, Tonsok; Hori, Masatoshi; Osuga, Keigo; Tatsumi, Mitsuaki; Higashihara, Hiroki; Maeda, Noboru; Tsuboyama, Takahiro; Nakamoto, Atsushi; Tomoda, Kaname; Tomiyama, Noriyuki

    2011-01-01

    Purpose: To investigate the validity of determining the contrast medium dose based on body surface area (BSA) for the abdominal contrast-enhanced multi-detector row CT comparing with determining based on body weight (BW). Materials and methods: Institutional review committee approval was obtained. In this retrospective study, 191 patients those underwent abdominal contrast-enhanced multi-detector row CT were enrolled. All patients received 96 mL of 320 mg I/mL contrast medium at the rate of 3.2 mL. The iodine dose required to enhance 1 HU of the aorta at the arterial phase and that of liver parenchyma at portal venous phase per BSA were calculated (EU BSA ) and evaluated the relationship with BSA. Those per BW were also calculated (EU BW ) and evaluated. Estimated enhancement values (EEVs) of the aorta and liver parenchyma with two protocols for dose decision based on BSA and BW were calculated and patient-to-patient variability was compared between two protocols using the Levene test. Results: The mean of EU BSA and EU BW were 0.0621 g I/m 2 /HU and 0.00178 g I/kg/HU for the aorta, and 0.342 g I/m 2 /HU and 0.00978 g I/kg/HU for the liver parenchyma, respectively. In the aortic enhancement, EU BSA was almost constant regardless of BSA, and the mean absolute deviation of the EEV with the BSA protocol was significantly lower than that with the BW protocol (P < .001), although there was no significant difference between two protocols in the hepatic parenchymal enhancement (P = .92). Conclusion: For the aortic enhancement, determining the contrast medium dose based on BSA was considered to improve patient-to-patient enhancement variability.

  10. Calculation of the time fixation accuracy for Si(Li)-detectors

    International Nuclear Information System (INIS)

    Kondrat'ev, V.P.; Krasnov, L.V.

    1981-01-01

    An accuracy of time fixation to pulses of changing shape for li-frifted si detectors with thickness over 1 mm is evaluated. The method of the comparison of main and converted signal shapes is the most universal method of time fixation. The idea of the method consists in shaping a bipolar pulse using a single-polar input Rulse and recording the point of the bipolar signal intersection with the zero level. The combination of an analytical method with numerical computer calculations is used for evaluating the time fixation fluctuations. Analysis of the results obtained shows that the value of delay p=tausub(d)/tausub(n) (where tausub(d) is delay time for the main part of a signal, tausub(n) is the maximum time of electron collection) affects most strongly the time shift. The parameter K=tausub(i)/tausub(n) (tausub(i) is a constant of integrating circuit) affects slightly the maximum value of time shift. For the li-drifted si detector 2 mm thick with dispattacement vottage of 400 V the moment of the time fixation will be equal to 47 is in the case of K--1, p=0.4 and x=0.25 (x=R/i, where R is a particle range in the detector, l is the thickness of the detector depleted area. The fluctuations in time fixation don't exceed 2.3 ns for the whole particle energy range

  11. Characterisation of different hole transport materials as used in organic p-i-n solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Pfuetzner, Steffen; Petrich, Annette; Koch, Maik; Riede, Moritz; Leo, Karl [Institut fuer Angewandte Photophysik, Technische Universitaet Dresden (Germany); Malbrich, Christine [Leibniz-Institut fuer Festkoerper- und Werkstoffforschung, Dresden (Germany); Hildebrandt, Dirk; Pfeiffer, Martin [Heliatek GmbH, Dresden (Germany)

    2008-07-01

    This work focuses on the replacement of hole transport material MeO-TPD, which has been used so far in organic p-i-n- solar cells despite its has unfavourable behaviour at elevated temperatures. For this reason, different characterisation and investigations of the hole transport materials PV-TPD, PV-TPDoM, Di-NPB and MeO-Spiro-TPD were done, i.e. dopability, hole mobility, absorption, reflection, cyclic voltametry and glass transition temperature were measured. With simplified structures, e.g. m-i-p diodes, and simplified solar cells, consisting of the blue absorbing fullerene C{sub 60} as acceptor and the transparent donor material 4P-TPD, further specific material properties were determined.

  12. Steady-state characteristics of lateral p-n junction vertical-cavity surface-emitting lasers

    Science.gov (United States)

    Ryzhii, V.; Tsutsui, N.; Khmyrova, I.; Ikegami, T.; Vaccaro, P. O.; Taniyama, H.; Aida, T.

    2001-09-01

    We developed an analytical device model for lateral p-n junction vertical-cavity surface-emitting lasers (LJVCSELs) with a quantum well active region. The model takes into account the features of the carrier injection, transport, and recombination in LJVCSELs as well as the features of the photon propagation in the cavity. This model is used for the calculation and analysis of the LJVCSEL steady-state characteristics. It is shown that the localization of the injected electrons primarily near the p-n junction and the reabsorption of lateral propagating photons significantly effects the LJVCSELs performance, in particular, the LJVCSEL threshold current and power-current characteristics. The reincarnation of electrons and holes due to the reabsorption of lateral propagating photons can substantially decrease the threshold current.

  13. Department of Radiation Detectors: Overview

    International Nuclear Information System (INIS)

    Piekoszewski, J.

    1998-01-01

    (full text) Work carried out in 1997 in the Department of Radiation Detectors concentrated on three subjects: (i) Semiconductor Detectors (ii) X-ray Tube Generators (iii) Material Modification using Ion and Plasma Beams. Semiconductor detectors: Semiconductor detectors of ionizing radiation are among the basic tools utilized in such fields of research and industry as nuclear physics, high energy physics, medical (oncology) radiotherapy, radiological protection, environmental monitoring, energy dispersive X-ray fluorescence non-destructive analysis of chemical composition, nuclear power industry. The Department all objectives are: - search for new types of detectors, - adapting modern technologies (especially of industrial microelectronics) to detector manufacturing, - producing unique detectors tailored for physics experiments, - manufacturing standard detectors for radiation measuring instruments, - scientific development of the staff. These 1997 objectives were accomplished particularly by: - research on unique detectors for nuclear physics (e.g. transmission type Si(Li) detectors with extremely thin entrance and exit window), - development of technology of high-resistivity (HRSi) silicon detectors and thermoelectric cooling systems (KBN grant), - study of the applicability of industrial planar technology in producing detectors, - manufacturing detectors developed in previous years, re-generating and servicing customer detectors of various origin. In accomplishing of the above, the Department cooperated with interested groups of physicists from our Institute (P-I and P-II Departments), Warsaw University, Warsaw Heavy Ion Laboratory and with some technology Institutes based in Warsaw (ITME, ITE). Some detectors and services have been delivered to customers on a commercial basis. X-Rat tube generators: The Department conducts research on design and technology of producing X-ray generators based on X-ray tubes of special construction. In 1997, work on a special

  14. Fabrication and characterization of surface barrier detector from commercial silicon substrate

    International Nuclear Information System (INIS)

    Silva, Julio Batista Rodrigues

    2016-01-01

    In this work it was developed radiation detectors silicon surface barrier that were capable of detecting the presence of gamma radiation from a low energy of iodine-125 seeds used in brachytherapy treatments. >From commercial silicon substrates detectors were developed, one sequence left of chemical treatments to the surfaces of these substrates with the intention of minimizing the possible noise generated, validation of the samples obtained as diodes, ensuring detector characteristics and effective use as detector for Iodine-125 radioactive sources with energy of about 25 keV and Americium-251 with energy on the order of 59 keV. Finished performing the analysis of the obtained energy spectra and so it was possible to observe the ability of these detectors to measure the energy from these seeds. (author)

  15. Clinical utility of N-isopropyl-p-[123I] iodoamphetamine (123I-IMP) for SPECT in epileptic children

    International Nuclear Information System (INIS)

    Taki, Kuniyasu; Seto, Hikaru; Futatsuya, Ryusuke; Kakishita, Masao; Seki, Hiroyasu.

    1989-01-01

    A regional cerebral perfusion study was performed in epileptic children using single photon emission computed tomography (SPECT) and N-isopropyl-p-[ 123 I] iodoamphetamine ( 123 I-IMP). A total of 22 patients with epilepsy underwent both a 123 I-IMP brain perfusion study and X-ray CT. Eighteen had positive and four had negative perfusion study results. Of the eighteen patients with positive perfusion study results, two were positive on X-ray CT. In these two patients, the areas of perfusion defects were larger than those of low density on X-ray CT. In only four patients did the areas of perfusion defects correspond to the sites of abnormal EEG. In conclusion, 123 I-IMP perfusion study is of great clinical value in pediatric epileptic cases. (author)

  16. Defects influence on short circuit current density in p-i-n silicon solar cell

    International Nuclear Information System (INIS)

    Wagah F Mohamad; Alhan M Mustafa

    2006-01-01

    The admittance analysis method has been used to calculate the collection efficiency and the short circuit current density in a-Si:H p-i-n solar cell, as a function of the thickness of i-layer. Its is evident that the results of the short circuit current can be used to determine the optimal thickness of the i-layer of a cell, and it will be more accurate in comparison with the previous studies using a constant generation rate or an empirical exponential function for the generation of charge carriers throughout the i-layer

  17. P-N semiconductor junctions used as X-ray detectors

    International Nuclear Information System (INIS)

    Pela, C.A.; Bruco, J.L.; Navas, E.A.; Paula, E. de; Guilardi Neto, T.

    1987-01-01

    The current response of some comercial P-N semiconductor junctions in function of X-ray incidency, in 40 to 140 KVp band used in diagnosis was characterized. Some junctions were also exposed to radiation of 80 to 250 KVp used in therapy. (C.G.C.) [pt

  18. Epitaxial Growth of an Organic p-n Heterojunction: C60 on Single-Crystal Pentacene.

    Science.gov (United States)

    Nakayama, Yasuo; Mizuno, Yuta; Hosokai, Takuya; Koganezawa, Tomoyuki; Tsuruta, Ryohei; Hinderhofer, Alexander; Gerlach, Alexander; Broch, Katharina; Belova, Valentina; Frank, Heiko; Yamamoto, Masayuki; Niederhausen, Jens; Glowatzki, Hendrik; Rabe, Jürgen P; Koch, Norbert; Ishii, Hisao; Schreiber, Frank; Ueno, Nobuo

    2016-06-01

    Designing molecular p-n heterojunction structures, i.e., electron donor-acceptor contacts, is one of the central challenges for further development of organic electronic devices. In the present study, a well-defined p-n heterojunction of two representative molecular semiconductors, pentacene and C60, formed on the single-crystal surface of pentacene is precisely investigated in terms of its growth behavior and crystallographic structure. C60 assembles into a (111)-oriented face-centered-cubic crystal structure with a specific epitaxial orientation on the (001) surface of the pentacene single crystal. The present experimental findings provide molecular scale insights into the formation mechanisms of the organic p-n heterojunction through an accurate structural analysis of the single-crystalline molecular contact.

  19. Black and grey neutron detectors

    International Nuclear Information System (INIS)

    Gabbard, F.

    1977-01-01

    Recent progress in the development and use of ''black'' and ''grey'' detectors is reviewed. Such detectors are widely used for counting neutrons in (p,n) and (α,n) experiments and in neutron cross section measurements. Accuracy of each detector is stressed. 19 figures

  20. Amorphous silicon/crystalline silicon heterojunctions for nuclear radiation detector applications

    International Nuclear Information System (INIS)

    Walton, J.T.; Hong, W.S.; Luke, P.N.; Wang, N.W.; Ziemba, F.P.

    1996-10-01

    Results on characterization of electrical properties of amorphous Si films for the 3 different growth methods (RF sputtering, PECVD [plasma enhanced], LPCVD [low pressure]) are reported. Performance of these a-Si films as heterojunctions on high resistivity p-type and n- type crystalline Si is examined by measuring the noise, leakage current, and the alpha particle response of 5mm dia detector structures. It is demonstrated that heterojunction detectors formed by RF sputtered films and PECVD films are comparable in performance with conventional surface barrier detectors. Results indicate that the a-Si/c-Si heterojunctions have the potential to greatly simplify detector fabrication. Directions for future avenues of nuclear particle detector development are indicated

  1. Amorphous silicon/crystalline silicon heterojunctions for nuclear radiation detector applications

    International Nuclear Information System (INIS)

    Walton, J.T.; Hong, W.S.; Luke, P.N.; Wang, N.W.; Ziemba, F.P.

    1996-01-01

    Results on the characterization of the electrical properties of amorphous silicon films for the three different growth methods, RF sputtering, PECVD, and LPCVD are reported. The performance of these a-Si films as heterojunctions on high resistivity p-type and n-type crystalline silicon is examined by measuring the noise, leakage current and the alpha particle response of 5 mm diameter detector structures. It is demonstrated that heterojunction detectors formed by RF sputtered films and PECVD films are comparable in performance with conventional surface barrier detectors. The results indicate that the a-Si/c-Si heterojunctions have the potential to greatly simplify detector fabrication. Directions for future avenues of nuclear particle detector development are indicated

  2. Crystallinity, Surface Morphology, and Photoelectrochemical Effects in Conical InP and InN Nanowires Grown on Silicon.

    Science.gov (United States)

    Parameshwaran, Vijay; Xu, Xiaoqing; Clemens, Bruce

    2016-08-24

    The growth conditions of two types of indium-based III-V nanowires, InP and InN, are tailored such that instead of yielding conventional wire-type morphologies, single-crystal conical structures are formed with an enlarged diameter either near the base or near the tip. By using indium droplets as a growth catalyst, combined with an excess indium supply during growth, "ice cream cone" type structures are formed with a nanowire "cone" and an indium-based "ice cream" droplet on top for both InP and InN. Surface polycrystallinity and annihilation of the catalyst tip of the conical InP nanowires are observed when the indium supply is turned off during the growth process. This growth design technique is extended to create single-crystal InN nanowires with the same morphology. Conical InN nanowires with an enlarged base are obtained through the use of an excess combined Au-In growth catalyst. Electrochemical studies of the InP nanowires on silicon demonstrate a reduction photocurrent as a proof of photovolatic behavior and provide insight as to how the observed surface polycrystallinity and the resulting interface affect these device-level properties. Additionally, a photovoltage is induced in both types of conical InN nanowires on silicon, which is not replicated in epitaxial InN thin films.

  3. Cyclotron production of high-purity 123I for medical applications via the 127I(p,5n)123Xe → 123I nuclear reaction

    International Nuclear Information System (INIS)

    Lagunas-Solar, M.C.

    1985-01-01

    The use of iodine-123 in nuclear medicine procedures is well documented in the scientific literature. Also, several methods for its production based on accelerator techniques have been described. Indirectly made 123 I via the 127 I(p,5n) 123 Xe → 123 I reaction produces 123 I of > 99.9% radionuclidic purity, with only 125 I ( 123 I production were developed at the University of California at Davis, where since 1974 the 76-in. isochronous cyclotron of the Crocker Nuclear Laboratory has been used for routine biweekly production of high-purity no-carrier-added 123 I

  4. CELULE FOTOVOLTAICE CU HETEROJONCŢIUNEA nCdS-pInP

    Directory of Open Access Journals (Sweden)

    Vasile BOTNARIUC

    2015-12-01

    Full Text Available Au fost studiate proprietăţile electrice şi fotoelectrice ale heterojoncţiunilor nCdS-pInP cu şi fără strat epitaxial inter-mediar poInP. S-a stabilit că la polarizări directe în mecanismul de transport al curentului predomină procesele de recom-binare în regiunea de sarcină spaţială. La polarizări inverse predomină procesele de tunelare. Prezenţa stratului epitaxial poInP depus repetat măreşte ISC până la 28,2 mA·cm-2, UCD până la 0,780 V, iar eficienţa conversiei energiei până la 15% la 300 K şi iluminare 100 mW/cm2. Fotosensibilitatea CF nCdS-poInP-pInP corespunde intervalului λ=550...950 nm cu un maximum plat localizat în intervalul λ=700...850 nm.HETEROJONCTION nCdS–pInP FOTOVOLTAIC CELLSElectrical and photoelectrical properties of nCdS-pInP hetero-junctions with and without intermediate poInP epitaxial layer were studied. It was established that the current flow mechanism at direct biases is determined mainly by the recombi-nation processes in the space charge region of the junction. At the reverse biases the tunneling processes are predominant. The presence of poInP layer leads to the photo-electrical parameters enhancing of hetero-junction: short circuit current increases up to 28,2 mA·cm -2, open circuit voltage up to 0,780V and the efficiency of solar energy conversion up to 15 % (at 300 K and illumination of 100mw/cm2. The photo-sensitivity of nCdS- poInP -pInP is in the wavelength region of λ= 550-950nm with a maximum localized to λ=700-850nm.

  5. New electronics for the surface detectors of the Pierre Auger Observatory

    Energy Technology Data Exchange (ETDEWEB)

    Kleifges, M., E-mail: Matthias.Kleifges@kit.edu [Karlsruhe Institute of Technology – Institute for Data Processing and Electronics, Karlsruhe (Germany)

    2016-07-11

    The Pierre Auger Observatory is the largest installation worldwide for the investigation of ultra-high energy cosmic rays. Air showers are detected using a hybrid technique with 27 fluorescence telescopes and 1660 water-Cherenkov detectors (WCD) distributed over about 3000 km{sup 2}. The Auger Collaboration has decided to upgrade the electronics of the WCD and complement the surface detector with scintillators (SSD). The objective is to improve the separation between the muonic and the electron/photon shower component for better mass composition determination during an extended operation period of 8–10 years. The surface detector electronics records data locally and generates time stamps based on the GPS timing. The performance of the detectors is significantly improved with a higher sampling rate, an increased dynamic range, new generation of GPS receivers, and FPGA integrated CPU power. The number of analog channels will be increased to integrate the new SSD, but the power consumption needs to stay below 10 W to be able to use the existing photovoltaic system. In this paper, the concept of the additional SSD is presented with a focus on the design and performance of the new surface detector electronics.

  6. The role of C:N:P stoichiometry in affecting denitrification in sediments from agricultural surface and tile-water wetlands.

    Science.gov (United States)

    Grebliunas, Brian D; Perry, William L

    2016-01-01

    Nutrient stoichiometry within a wetland is affected by the surrounding land use, and may play a significant role in the removal of nitrate (NO3-N). Tile-drained, agricultural watersheds experience high seasonal inputs of NO3-N, but low phosphorus (PO4-P) and dissolved organic carbon (DOC) loads relative to surface water dominated systems. This difference may present stoichiometric conditions that limit denitrification within receiving waterways. We investigated how C:N:P ratios affected denitrification rates of sediments from tile-drained mitigation wetlands incubated for: 0, 5, 10, and 20 days. We then tested whether denitrification rates of sediments from surface-water and tile-drained wetlands responded differently to C:N ratios of 2:1 versus 4:1. Ratios of C:N:P (P tile-drained wetland sediments. Carbon limitation of denitrification became evident at elevated NO3-N concentrations (20 mg L(-1)). Denitrification measured from tile water and surface water wetland sediments increased significantly (P < 0.05) at the 2:1 and 4:1 C:N treatments. The results from both experiments suggest wetland sediments provide a limiting pool of labile DOC to maintain prolonged NO3-N removal. Also, DOC limitation became more evident at elevated NO3-N concentrations (20 mg L(-1)). Irrespective of NO3-N concentrations, P did not limit denitrification rates. In addition to wetting period, residence time, and maintenance of anaerobic conditions, the availability of labile DOC is playing an important limiting role in sediment denitrification within mitigation wetlands.

  7. Particle detectors based on semiconducting InP epitaxial layers

    Czech Academy of Sciences Publication Activity Database

    Yatskiv, Roman; Grym, Jan; Žďánský, Karel

    2011-01-01

    Roč. 6, C01072 (2011), C010721-C010725 ISSN 1748-0221 R&D Projects: GA AV ČR KJB200670901; GA MŠk(CZ) OC10021; GA ČR(CZ) GP102/08/P617 Institutional research plan: CEZ:AV0Z20670512 Keywords : Solid state detectors * Gamma detectors * Radiation-hard detectors Subject RIV: JA - Electronics ; Optoelectronics, Electrical Engineering Impact factor: 1.869, year: 2011

  8. Newspaper: Files. Radiotherapy and accidental radiation protection. Scientific management between I.G.R. and I.P.S.N

    International Nuclear Information System (INIS)

    1999-02-01

    The Gustave-Roussy Institute (I.G.R.), the biggest european center of cancer treatment, and the Institute of Protection and Nuclear Safety (I.P.S.N.) that lead important researches and expertise in accidental radiation protection have established an agreement for a research program for six years. The objective is to speed up the researches in radio-pathology and radiobiology to improve the techniques used to treat the irradiated persons, for therapeutic or accidental reasons. Three principal themes have been chosen as starting point: Diagnosis and prognosis bio-indicators of irradiation effects on the digestive system, biological dosimetry and long term effects of a high dose irradiation. New themes will be tackled in function of the results or new needs. (N.C.)

  9. Performance of p-type micro-strip detectors after irradiation to $7.5x10^{15} p/cm^{2}$

    CERN Document Server

    Allport, Philip P; Lozano-Fantoba, Manuel; Sutcliffe, Peter; Velthuis, J J; Vossebeld, Joost Herman

    2004-01-01

    Exploiting the advantages of reading out segmented silicon from the n-side, we have produced test detectors with LHC pitch but 1 cm long strips which even after proton irradiation at the CERN PS to 7.5*10 /sup 15/ cm/sup -2/ show signal to noise greater than 8:1 using LHC speed electronics. This dose exceeds by a factor of 2 that required for a replacement of the ATLAS semiconductor tracker to cope with an upgrade of the LHC to a Super-LHC with 10 times greater luminosity. These detectors were processed on p-type starting material of resistivity ~ 2 k Omega cm and, unlike n-in-n designs, only required single-sided processing. Such technology should therefore provide a relatively inexpensive route to replacing the central tracking at both ATLAS and CMS for Super-LHC. The shorter strip length is required to limit the noise. Even at these extreme doses 30% of the non-irradiated signal is seen. This 7000e/sup -/ signal (in 280 mu m thick sensors) is very competitive with the post irradiation performance of other,...

  10. In-situ gallium-doping for forming p{sup +} germanium-tin and application in germanium-tin p-i-n photodetector

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Wei; Dong, Yuan; D' Costa, Vijay Richard; Yeo, Yee-Chia, E-mail: yeo@ieee.org [Department of Electrical and Computer Engineering, National University of Singapore, Singapore 117576 (Singapore); Vajandar, Saumitra; Lim, Sin Leng; Osipowicz, Thomas; Tok, Eng Soon [Department of Physics and Yale-NUS College, National University of Singapore, Singapore 117551 (Singapore)

    2016-04-21

    The in-situ Ga doping technique was used to form heavily p-type doped germanium-tin (Ge{sub 1−x}Sn{sub x}) layers by molecular beam epitaxy, avoiding issues such as Sn precipitation and surface segregation at high annealing temperatures that are associated with the alternative implant and anneal approach. In this way, an electrically active Ga concentration of up to ∼3.2 × 10{sup 20 }cm{sup −3} can be realized for Ge{sub 1−x}Sn{sub x}. The impacts of varying the Ga concentration on the crystalline quality and the mobility of p-type Ge{sub 1−x}Sn{sub x} were investigated. High crystalline quality Ge{sub 0.915}Sn{sub 0.085} can be realized with an active Ga concentration of up to ∼1.2 × 10{sup 20 }cm{sup −3}. More than 98% of the Sn atoms are located on substitutional lattice sites, although the substitutionality of Sn in p-type Ge{sub 1−x}Sn{sub x} decreases with an increasing Ga concentration. When the Ga concentration introduced is higher than 3.2 × 10{sup 20 }cm{sup −3}, excess Ga atoms cannot be substitutionally incorporated, and segregation of Ga and Sn towards the surface during growth is observed. The in-situ Ga-doped Ge{sub 0.915}Sn{sub 0.085} epitaxy was integrated in a Ge{sub 0.915}Sn{sub 0.085}-on-Si p-i-n (PIN) photodiode fabrication process, and well-behaved Ge{sub 0.915}Sn{sub 0.085}/Si PIN junction characteristics were obtained. A large forward-bias current to reverse bias current ratio of 6 × 10{sup 4} and a low reverse current (dark current) of 0.24 μA were achieved at V{sub bias} = −1 V.

  11. Alphas and surface backgrounds in liquid argon dark matter detectors

    Science.gov (United States)

    Stanford, Christopher J.

    Current observations from astrophysics indicate the presence of dark matter, an invisible form of matter that makes up a large part of the mass of the universe. One of the leading theories for dark matter is that it is made up of Weakly Interacting Massive Particles (WIMPs). One of the ways we try to discover WIMPs is by directly detecting their interaction with regular matter. This can be done using a scintillator such as liquid argon, which gives off light when a particle interacts with it. Liquid argon (LAr) is a favorable means of detecting WIMPs because it has an inherent property that enables a technique called pulse-shape discrimination (PSD). PSD can distinguish a WIMP signal from the constant background of electromagnetic signals from other sources, like gamma rays. However, there are other background signals that PSD is not as capable of rejecting, such as those caused by alpha decays on the interior surfaces of the detector. Radioactive elements that undergo alpha decay are introduced to detector surfaces during construction by radon gas that is naturally present in the air, as well as other means. When these surface isotopes undergo alpha decay, they can produce WIMP-like signals in the detector. We present here two LAr experiments. The first (RaDOSE) discovered a property of an organic compound that led to a technique for rejecting surface alpha decays in LAr detectors with high efficiency. The second (DarkSide-50) is a dark matter experiment operated at LNGS in Italy and is the work of an international collaboration. A detailed look is given into alpha decays and surface backgrounds present in the detector, and projections are made of alpha-related backgrounds for 500 live days of data. The technique developed with RaDOSE is applied to DarkSide-50 to determine its effectiveness in practice. It is projected to suppress the surface background in DarkSide-50 by more than a factor of 1000.

  12. Study of a nTHGEM-based thermal neutron detector

    Science.gov (United States)

    Li, Ke; Zhou, Jian-Rong; Wang, Xiao-Dong; Xiong, Tao; Zhang, Ying; Xie, Yu-Guang; Zhou, Liang; Xu, Hong; Yang, Gui-An; Wang, Yan-Feng; Wang, Yan; Wu, Jin-Jie; Sun, Zhi-Jia; Hu, Bi-Tao

    2016-07-01

    With new generation neutron sources, traditional neutron detectors cannot satisfy the demands of the applications, especially under high flux. Furthermore, facing the global crisis in 3He gas supply, research on new types of neutron detector as an alternative to 3He is a research hotspot in the field of particle detection. GEM (Gaseous Electron Multiplier) neutron detectors have high counting rate, good spatial and time resolution, and could be one future direction of the development of neutron detectors. In this paper, the physical process of neutron detection is simulated with Geant4 code, studying the relations between thermal conversion efficiency, boron thickness and number of boron layers. Due to the special characteristics of neutron detection, we have developed a novel type of special ceramic nTHGEM (neutron THick GEM) for neutron detection. The performance of the nTHGEM working in different Ar/CO2 mixtures is presented, including measurements of the gain and the count rate plateau using a copper target X-ray source. A detector with a single nTHGEM has been tested for 2-D imaging using a 252Cf neutron source. The key parameters of the performance of the nTHGEM detector have been obtained, providing necessary experimental data as a reference for further research on this detector. Supported by National Natural Science Foundation of China (11127508, 11175199, 11205253, 11405191), Key Laboratory of Neutron Physics, CAEP (2013DB06, 2013BB04) and CAS (YZ201512)

  13. Measurements of nitrogen depth distribution in the surface of steel with the 14N(d,p0)15N reaction

    International Nuclear Information System (INIS)

    Didriksson, R.; Goenczi, L.; Sundqvist, B.

    1980-01-01

    The 14 N(d,p 0 ) 15 N nuclear reaction has been used to measure the nitrogen depth distribution in the surface of steel samples. With a beam energy of 2.5 MeV a depth of 15μm could be analyzed. The depth resolution was 0.7 μm (FWHM) and nitrogen contents down to 0.02 percent could be determined. (author)

  14. Axial p-n junction and space charge limited current in single GaN nanowire

    Science.gov (United States)

    Fang, Zhihua; Donatini, Fabrice; Daudin, Bruno; Pernot, Julien

    2018-01-01

    The electrical characterizations of individual basic GaN nanostructures, such as axial nanowire (NW) p-n junctions, are becoming indispensable and crucial for the fully controlled realization of GaN NW based devices. In this study, electron beam induced current (EBIC) measurements were performed on two single axial GaN p-n junction NWs grown by plasma-assisted molecular beam epitaxy. I-V characteristics revealed that both ohmic and space charge limited current (SCLC) regimes occur in GaN p-n junction NW. Thanks to an improved contact process, both the electric field induced by the p-n junction and the SCLC in the p-part of GaN NW were disclosed and delineated by EBIC signals under different biases. Analyzing the EBIC profiles in the vicinity of the p-n junction under 0 V and reverse bias, we deduced a depletion width in the range of 116-125 nm. Following our previous work, the acceptor N a doping level was estimated to be 2-3 × 1017 at cm-3 assuming a donor level N d of 2-3 × 1018 at cm-3. The hole diffusion length in n-GaN was determined to be 75 nm for NW #1 and 43 nm for NW #2, demonstrating a low surface recombination velocity at the m-plane facet of n-GaN NW. Under forward bias, EBIC imaging visualized the electric field induced by the SCLC close to p-side contact, in agreement with unusual SCLC previously reported in GaN NWs.

  15. Axial p-n junction and space charge limited current in single GaN nanowire.

    Science.gov (United States)

    Fang, Zhihua; Donatini, Fabrice; Daudin, Bruno; Pernot, Julien

    2018-01-05

    The electrical characterizations of individual basic GaN nanostructures, such as axial nanowire (NW) p-n junctions, are becoming indispensable and crucial for the fully controlled realization of GaN NW based devices. In this study, electron beam induced current (EBIC) measurements were performed on two single axial GaN p-n junction NWs grown by plasma-assisted molecular beam epitaxy. I-V characteristics revealed that both ohmic and space charge limited current (SCLC) regimes occur in GaN p-n junction NW. Thanks to an improved contact process, both the electric field induced by the p-n junction and the SCLC in the p-part of GaN NW were disclosed and delineated by EBIC signals under different biases. Analyzing the EBIC profiles in the vicinity of the p-n junction under 0 V and reverse bias, we deduced a depletion width in the range of 116-125 nm. Following our previous work, the acceptor N a doping level was estimated to be 2-3 × 10 17 at cm -3 assuming a donor level N d of 2-3 × 10 18 at cm -3 . The hole diffusion length in n-GaN was determined to be 75 nm for NW #1 and 43 nm for NW #2, demonstrating a low surface recombination velocity at the m-plane facet of n-GaN NW. Under forward bias, EBIC imaging visualized the electric field induced by the SCLC close to p-side contact, in agreement with unusual SCLC previously reported in GaN NWs.

  16. Multiplication in Silicon p-n Junctions

    DEFF Research Database (Denmark)

    Moll, John L.

    1965-01-01

    Multiplication values were measured in the collector junctions of silicon p-n-p and n-p-n transistors before and after bombardment by 1016 neutrons/cm2. Within experimental error there was no change either in junction fields, as deduced from capacitance measurements, or in multiplication values i...

  17. Composite detector for mixed radiations based on CsI(Tl) and dispersions of small ZnSe(Te) crystals

    International Nuclear Information System (INIS)

    Ryzhikov, V.; Gal'chinetskii, L.; Katrunov, K.; Lisetskaya, E.; Gavriluk, V.; Zelenskaya, O.; Starzhynskiy, N.; Chernikov, V.

    2005-01-01

    A new large area detector of high-energy X-ray and β-radiation has been designed and studied. A composite material based on small-crystalline ZnSe(Te) was applied onto the wide surface of a light guide. An experimental specimen has been prepared, which showed β-sensitivity C β =5.5cm 2 . The spectrograms of a 90 Sr+ 90 Y β-source obtained with the specimen under study make it possible to evaluate the age of the source by the ratio of low- and high-energy regions of the spectrum. The combined detector (CD) comprises a single crystalline plate of ZnSe(Te) placed onto the output window of a scintillating transparent light guide made of CsI(Tl) in the shape of a truncated pyramid. The CsI(Tl) light guide is used to create an additional channel for detection of γ-radiation, as well as for protecting the photodiode from the penetrating radiation. It is shown that introduction of the light guide does not worsen the energy resolution characteristics of ZnSe(Te). Separate detection of α- and γ-radiation has been achieved under simultaneous excitation by 239 Pu (ZnSe(Te), R α =6%) and 241 Am (CsI(Tl), R γ =20%). The use of selective optical filters allows separation of the peaks of total absorption (p.t.a.) in the case of their superposition

  18. Synthesis and reactivity of TADDOL-based chiral Fe(II) PNP pincer complexes-solution equilibria between κ(2)P,N- and κ(3)P,N,P-bound PNP pincer ligands.

    Science.gov (United States)

    Holzhacker, Christian; Stöger, Berthold; Carvalho, Maria Deus; Ferreira, Liliana P; Pittenauer, Ernst; Allmaier, Günter; Veiros, Luis F; Realista, Sara; Gil, Adrià; Calhorda, Maria José; Müller, Danny; Kirchner, Karl

    2015-08-07

    Treatment of anhydrous FeX2 (X = Cl, Br) with 1 equiv. of the asymmetric chiral PNP pincer ligands PNP-R,TAD (R = iPr, tBu) with an R,R-TADDOL (TAD) moiety afforded complexes of the general formula [Fe(PNP)X2]. In the solid state these complexes adopt a tetrahedral geometry with the PNP ligand coordinated in κ(2)P,N-fashion, as shown by X-ray crystallography and Mössbauer spectroscopy. Magnetization studies led to a magnetic moment very close to 4.9μB reflecting the expected four unpaired d-electrons (quintet ground state). In solution there are equilibria between [Fe(κ(3)P,N,P-PNP-R,TAD)X2] and [Fe(κ(2)P,N-PNP-R,TAD)X2] complexes, i.e., the PNP-R,TAD ligand is hemilabile. At -50 °C these equilibria are slow and signals of the non-coordinated P-TAD arm of the κ(2)P,N-PNP-R,TAD ligand can be detected by (31)P{(1)H} NMR spectroscopy. Addition of BH3 to a solution of [Fe(PNP-iPr,TAD)Cl2] leads to selective boronation of the pendant P-TAD arm shifting the equilibrium towards the four-coordinate complex [Fe(κ(2)P,N-PNP-iPr,TAD(BH3))Cl2]. DFT calculations corroborate the existence of equilibria between four- and five-coordinated complexes. Addition of CO to [Fe(PNP-iPr,TAD)X2] in solution yields the diamagnetic octahedral complexes trans-[Fe(κ(3)P,N,P-PNP-iPr,TAD)(CO)X2], which react further with Ag(+) salts in the presence of CO to give the cationic complexes trans-[Fe(κ(3)P,N,P-PNP-iPr,TAD)(CO)2X](+). CO addition most likely takes place at the five coordinate complex [Fe(κ(3)P,N,P-PNP-iPr,TAD)X2]. The mechanism for the CO addition was also investigated by DFT and the most favorable path obtained corresponds to the rearrangement of the pincer ligand first from a κ(2)P,N- to a κ(3)P,N,P-coordination mode followed by CO coordination to [Fe(κ(3)P,N,P-PNP-iPr,TAD)X2]. Complexes bearing tBu substituents do not react with CO. Moreover, in the solid state none of the tetrahedral complexes are able to bind CO.

  19. Synthesis, in vitro pharmacologic characterization, and preclinical evaluation of N-[2-(1'-piperidinyl)ethyl]-3-[125I]iodo-4-methoxybenzamide (P[125I]MBA) for imaging breast cancer

    International Nuclear Information System (INIS)

    John, Christy S.; Bowen, Wayne D.; Fisher, Susan J.; Lim, Benjamin B.; Geyer, Brian C.; Vilner, Bertold J.; Wahl, Richard L.

    1999-01-01

    The goal of this study was to investigate the potential use of a radioiodinated benzamide, N-[2-(1'-piperidinyl)ethyl]-3-iodo[ 125 I]-4-methoxybenzamide (P[ 125 I]MBA), a sigma receptor binding radioligand for imaging breast cancer. The chemical and radiochemical syntheses of PIMBA are described. The pharmacological evaluation of PIMBA was carried out for sigma-1 and sigma-2 receptor sites. The in vivo pharmacokinetics of the radioiodinated benzamide were determined in rats and comparison of P[ 125 I]MBA with Tc-99m sestamibi were made in a rat mammary tumor model. Sigma-1 affinity (K i ) for PIMBA in guinea pig brain membranes using [ 3 H](+)pentazocine was found to be 11.82±0.68 nM, whereas sigma-2 affinity in rat liver using [ 3 H]DTG (1,3-o-di-tolylguanidine) was 206±11 nM. Sites in guinea pig brain membranes labeled by P[ 125 I]MBA showed high affinity for haloperidol, (+)-pentazocine, BD1008, and PIMBA ( K i =4.87±1.49,8.81±1.97,0.057±0.005,46.9±1.8 nM, respectively). Competition binding studies were carried out in human ductal breast carcinoma cells (T47D). A dose-dependent inhibition of specific binding was observed with several sigma ligands. K i values for the inhibition of P[ 125 I]MBA binding in T47D cells for haloperidol, N-[2-(1'-piperidinyl)]ethyl]4-iodobenzamide (IPAB), N-(N-benzylpiperidin-4-yl)-4-iodobenzamide (4-IBP), and PIMBA were found to be 1.30±0.07, 13±1.5, 5.19±2.3, 1.06±0.5 nM, respectively. The in vitro binding data in guinea pig brain membranes and breast cancer cells confirmed binding to sigma sites. The saturation binding of P[ 125 I]MBA in T47D cells as studied by Scatchard analysis showed saturable binding, with a K d =94±7 nM and a B max =2035±305 fmol/mg of proteins. Biodistribution studies in Sprague-Dawley rats showed a rapid clearance of P[ 125 I]MBA from the normal organs. The potential of PIMBA in imaging breast cancer was evaluated in Lewis rats bearing syngeneic RMT breast cancers, a cancer that closely mimics

  20. Improved method for the stabilization of NaI-photomultiplier gamma detectors against thermal and other drift

    International Nuclear Information System (INIS)

    Zucker, M.S.

    1985-01-01

    Alpha peaks have been used as part of servo systems to stabilize NaI-photomultiplier gamma detectors against drift. However, alpha peaks shift with temperature change differently than do gamma peaks, thus spoiling what would otherwise be a workable scheme for stabilizing against probably the most serious source of NaI-p.m. detector drift, namely thermal effects. It has been found possible to accurately compensate for the difference in the shift with temperature versus gamma peaks using the signal derived from a thermistor in thermal contact with the NaI crystal to control the bias of a discriminator in the servo circuit. The servo circuit utilizing this principle has been used in commercial multichannel analyzers of the type intended for field use under adverse ambient conditions

  1. Response of monitors of surface contamination to internal exposition control from 131I in the 'nuclear medicine services'

    International Nuclear Information System (INIS)

    Puerta, Nancy; Rojo, Ana M.; Villella, Adrian; Gossio, Sebastian; Parada, Ines Gomez; Acosta, Norma; Arenas, German

    2013-01-01

    The IAEA, in its publication RS-G-1.2, proposes individual control of workers occupationally exposed with risk of internal exposure when the potential exposure provided by incorporation leads to a value of annual committed effective dose equal to or greater than 1 mSv. Because the radionuclide 131 I is the most important to control internal exposure in Nuclear Medicine Services, it is evaluated if the surface contamination monitors, commonly used in nuclear medicine centers of Argentina, would implement individual control of internal exposure to 131 I. Selected detectors were calibrated with a dummy neck and thyroid with calibrated sources of 131 I and 133 Ba reference. For each detector is was estimated the detection efficiency for 131 I and its detection limit. Each instrument was evaluated for the lowest effective dose possible to detect compromised by individual routine monitoring with different measurement intervals . We analyzed the response of each team for determining conditions that may be effective for the control of internal exposure of 131 I. Finally , we conclude that the daily individual monitoring surface contamination detectors available in the Nuclear Medicine Services is feasible to implement and ensures detection of significant additions of 131 I

  2. Open-gated pH sensor fabricated on an undoped-AlGaN/GaN HEMT structure.

    Science.gov (United States)

    Abidin, Mastura Shafinaz Zainal; Hashim, Abdul Manaf; Sharifabad, Maneea Eizadi; Rahman, Shaharin Fadzli Abd; Sadoh, Taizoh

    2011-01-01

    The sensing responses in aqueous solution of an open-gated pH sensor fabricated on an AlGaN/GaN high-electron-mobility-transistor (HEMT) structure are investigated. Under air-exposed ambient conditions, the open-gated undoped AlGaN/GaN HEMT only shows the presence of a linear current region. This seems to show that very low Fermi level pinning by surface states exists in the undoped AlGaN/GaN sample. In aqueous solution, typical current-voltage (I-V) characteristics with reasonably good gate controllability are observed, showing that the potential of the AlGaN surface at the open-gated area is effectively controlled via aqueous solution by the Ag/AgCl gate electrode. The open-gated undoped AlGaN/GaN HEMT structure is capable of distinguishing pH level in aqueous electrolytes and exhibits linear sensitivity, where high sensitivity of 1.9 mA/pH or 3.88 mA/mm/pH at drain-source voltage, V(DS) = 5 V is obtained. Due to the large leakage current where it increases with the negative gate voltage, Nernstian like sensitivity cannot be determined as commonly reported in the literature. This large leakage current may be caused by the technical factors rather than any characteristics of the devices. Surprisingly, although there are some imperfections in the device preparation and measurement, the fabricated devices work very well in distinguishing the pH levels. Suppression of current leakage by improving the device preparation is likely needed to improve the device performance. The fabricated device is expected to be suitable for pH sensing applications.

  3. Open-Gated pH Sensor Fabricated on an Undoped-AlGaN/GaN HEMT Structure

    Directory of Open Access Journals (Sweden)

    Taizoh Sadoh

    2011-03-01

    Full Text Available The sensing responses in aqueous solution of an open-gated pH sensor fabricated on an AlGaN/GaN high-electron-mobility-transistor (HEMT structure are investigated. Under air-exposed ambient conditions, the open-gated undoped AlGaN/GaN HEMT only shows the presence of a linear current region. This seems to show that very low Fermi level pinning by surface states exists in the undoped AlGaN/GaN sample. In aqueous solution, typical current-voltage (I-V characteristics with reasonably good gate controllability are observed, showing that the potential of the AlGaN surface at the open-gated area is effectively controlled via aqueous solution by the Ag/AgCl gate electrode. The open-gated undoped AlGaN/GaN HEMT structure is capable of distinguishing pH level in aqueous electrolytes and exhibits linear sensitivity, where high sensitivity of 1.9 mA/pH or 3.88 mA/mm/pH at drain-source voltage, VDS = 5 V is obtained. Due to the large leakage current where it increases with the negative gate voltage, Nernstian like sensitivity cannot be determined as commonly reported in the literature. This large leakage current may be caused by the technical factors rather than any characteristics of the devices. Surprisingly, although there are some imperfections in the device preparation and measurement, the fabricated devices work very well in distinguishing the pH levels. Suppression of current leakage by improving the device preparation is likely needed to improve the device performance. The fabricated device is expected to be suitable for pH sensing applications.

  4. A comparative study on surface morphology from the HgI2 semiconductors prepared by different techniques

    International Nuclear Information System (INIS)

    Martins, Joao F.T.; Ferraz, Caue de M.; Santos, Robinson A. dos; Mesquita, Carlos H. de; Hamada, Margarida M.

    2013-01-01

    The impurity effect in the surface morphology quality of HgI 2 crystals was evaluated, aiming a future application of these crystals as room temperature radiation semiconductor detector. The crystals were purified and grown by two techniques: (1) physical vapor transport (PVT) and (2) saturated solution from dimethylsulfoxide (DMSO) complexes. Systematic measurements were carried out for determining the stoichiometry, structure orientation, surface morphology and impurity of the crystal. The best quality of surface morphology was found for the crystals purified and grown by the PVT technique. Significant decrease in the impurity concentration was found, purifying the crystal by means of two successive growths by the PVT technique, while a Si contamination in the HgI 2 crystal was observed, during its growth by the DMSO method. Thus, for DMSO technique was not possible to identify the peaks of the other trace elements present as impurities in the PVT crystal, due to the high intensity of the Si peak in the DMSO crystal. It was demonstrated the impurities affect significantly the surface morphology quality from the HgI 2 crystal. Key Words: Semiconductor crystal, Radiation detector, Mercury Iodide crystal, surface morphology. (author)

  5. Radiometric and dosimetric characteristics of HgI2 detectors

    International Nuclear Information System (INIS)

    Zaletin, V.M.; Krivozubov, O.V.; Torlin, M.A.; Fomin, V.I.

    1988-01-01

    The characteristics of HgI 2 detectors in x-ray and gamma detection in applications to radiometric and dosimetric monitoring and as portable instruments for such purposes was considered. Blocks with mosaic and sandwich structures were prepared and tested against each other and, for comparative purposes, against CdTe detectors for relative sensitivities at various gamma-quanta energies. Sensitivity dependencies on gamma radiation energy were plotted for the detector materials and structures as were current dependencies on the dose rate of x rays. Results indicated that the mercury iodide detectors could be used in radiometric and dosimetric measurements at gamma quantum energies up to and in excess of 1000 KeV

  6. Signal Attenuation Curve for Different Surface Detector Arrays

    Science.gov (United States)

    Vicha, J.; Travnicek, P.; Nosek, D.; Ebr, J.

    2014-06-01

    Modern cosmic ray experiments consisting of large array of particle detectors measure the signals of electromagnetic or muon components or their combination. The correction for an amount of atmosphere passed is applied to the surface detector signal before its conversion to the shower energy. Either Monte Carlo based approach assuming certain composition of primaries or indirect estimation using real data and assuming isotropy of arrival directions can be used. Toy surface arrays of different sensitivities to electromagnetic and muon components are assumed in MC simulations to study effects imposed on attenuation curves for varying composition or possible high energy anisotropy. The possible sensitivity of the attenuation curve to the mass composition is also tested for different array types focusing on a future apparatus that can separate muon and electromagnetic component signals.

  7. Silicon surface barrier detectors used for liquid hydrogen density measurement

    Science.gov (United States)

    James, D. T.; Milam, J. K.; Winslett, H. B.

    1968-01-01

    Multichannel system employing a radioisotope radiation source, strontium-90, radiation detector, and a silicon surface barrier detector, measures the local density of liquid hydrogen at various levels in a storage tank. The instrument contains electronic equipment for collecting the density information, and a data handling system for processing this information.

  8. GaAs nanowire array solar cells with axial p-i-n junctions.

    Science.gov (United States)

    Yao, Maoqing; Huang, Ningfeng; Cong, Sen; Chi, Chun-Yung; Seyedi, M Ashkan; Lin, Yen-Ting; Cao, Yu; Povinelli, Michelle L; Dapkus, P Daniel; Zhou, Chongwu

    2014-06-11

    Because of unique structural, optical, and electrical properties, solar cells based on semiconductor nanowires are a rapidly evolving scientific enterprise. Various approaches employing III-V nanowires have emerged, among which GaAs, especially, is under intense research and development. Most reported GaAs nanowire solar cells form p-n junctions in the radial direction; however, nanowires using axial junction may enable the attainment of high open circuit voltage (Voc) and integration into multijunction solar cells. Here, we report GaAs nanowire solar cells with axial p-i-n junctions that achieve 7.58% efficiency. Simulations show that axial junctions are more tolerant to doping variation than radial junctions and lead to higher Voc under certain conditions. We further study the effect of wire diameter and junction depth using electrical characterization and cathodoluminescence. The results show that large diameter and shallow junctions are essential for a high extraction efficiency. Our approach opens up great opportunity for future low-cost, high-efficiency photovoltaics.

  9. The Micro-Vertex-Detector for the P-bar ANDA experiment

    International Nuclear Information System (INIS)

    Zotti, Laura

    2013-01-01

    P-bar ANDA is a fixed target experiment that will be carried out at the future FAIR facility. P-bar ANDA will provide an excellent tool to address fundamental question in the field of hadronic physics, with a physic program that extends from the investigation of QCD (providing insight in the mechanisms of mass generation and confinement) to the test of fundamental symmetries. The Micro-Vertex-Detector located in the innermost part of the central tracking system will be composed by hybrid pixel and double-sided micro-strip silicon detectors. The Micro-Vertex-Detector will play an important role for the P-bar ANDA physics goals. The possibility to reconstruct the secondary vertices and the applicability of a precise D meson tagging is essential for the spectroscopy in the open charm sector and the charmonium mass region. To this aim the Micro-Vertex-Detector features a spatial resolution better than 100μm, a time resolution better than 20ns, a limited material budget, and a high data rate capability in a triggerless environment. An overview of the Micro-Vertex-Detector related to the physics goals will be presented.

  10. The effect of cathode bias (field effect) on the surface leakage current of CdZnTe detectors

    International Nuclear Information System (INIS)

    Bolotnikov, A.E.; Hubert Chen, C.M.; Cook, W.R.; Harrison, F.A.; Kuvvetli, I.; Schindler, S.M.; Stahle, C.M.; Parker, B.H.

    2003-01-01

    Surface resistivity is an important parameter of multi-electrode CZT detectors such as coplanar-grid, strip, or pixel detectors. Low surface resistivity results in a high leakage current and affects the charge collection efficiency in the areas near contacts. Thus, it is always desirable to have the surface resistivity of the detector as high as possible. In the past the most significant efforts were concentrated to develop passivation techniques for CZT detectors. However, as we found, the field-effect caused by a bias applied on the cathode can significantly reduce the surface resistivity even though the detector surface was carefully passivated. In this paper we illustrate that the field-effect is a common feature of the CZT multi-electrode detectors, and discuss how to take advantage of this effect to improve the surface resistivity of CZT detectors

  11. Development of a alpha spectrometer system with the surface barrier detector

    International Nuclear Information System (INIS)

    Alencar, Marcus Alexandre Vallini de

    1994-04-01

    The aim of this work is the development of an α spectrometer of low cost and home made technology. The spectrometer is mounted in a double NIM module and includes a surface barrier detector and dedicate electronic system. Six barrier surface detectors were made, three of which with η type silicon wafer 3350 Ω.cm, 270mm 2 and three other with ρ type silicon wafer 5850 Ω.cm and 220mm 2 . The rectifier and the ohmic contacts were prepared at high vacuum (10 -2 to 10 -3 Pa) evaporation with 40μg/cm 2 of Au and Al respectively for the η type detectors, and with Al and Au respectively for the ρ type detectors. The electronic system is composed by a low noise charge sensitive preamplifier with the operational amplifier LF-356 mounted with 1OOMΩ feedback resistor and a 0.5 pF capacitor. The linear amplifier is also based in the LF-356 and the LM-310 operational amplifier. The bipolar output is formatted through a (CR) 2- (RC) 4 shaping network and the unipolar output is obtained through a CR-(RC) 4 shaping system which is sufficient to realize a almost true Gaussian shaping pulse with a time constant of 3.0μs. This format was chosen because we can expect a low counting rate and the gaussian pulse can improve the signal/noise ratio. The first CR differentiation has also a active pole-zero cancellation network.The resolution of detectors for 241 Am α particles at room temperature (24 degree) vary 21 to 44 keV FWHM. The electronic noise of the noise of the system is 7.5 keV FWHM at OpF input capacitance. The overall resolution of the spectrometer was found to be 62 keV FWHM at room temperature. The simplicity of the electronic system, the low cost of the construction and the overall resolution show that this alpha spectrometer can be readily used in measurements where high resolution is not a premium. (author)

  12. Bulk GaN alpha-particle detector with large depletion region and improved energy resolution

    Science.gov (United States)

    Xu, Qiang; Mulligan, Padhraic; Wang, Jinghui; Chuirazzi, William; Cao, Lei

    2017-03-01

    An alpha-particle detector was fabricated using a freestanding n-type bulk GaN wafer with a Au/Ni/GaN sandwich Schottky structure. Current-voltage measurements at room temperature revealed a Schottky contact with a leakage current of 7.53±0.3 nA at a reverse bias of 200 V. The detector had a large depletion depth that can capture much of the energy from 5.486 MeV alpha particles emitted from a 241Am source. The resolution of its alpha-particle energy spectrum was improved to 2.2±0.2% at 5.486 MeV under a bias of 550 V. This superior resolution was attributed to the shortening of the carrier transit time and the large energy deposition within the large depletion depth, i.e., 27 μm at -550 V, which all resulted in a more complete charge collection. A model developed using the ATLAS simulation framework from Silvaco Inc. was employed to study the charge collection process. The simulation results were found to agree closely with the experimental results. This detector will be beneficial for research at neutron scattering facilities, the International Thermonuclear Experimental Reactor, and the Large Hadron Collider, among other institutions, where the Si-based charged particle detectors could be quickly degraded in an intense radiation field.

  13. Characterization of 3D-DDTC detectors on p-type substrates

    CERN Document Server

    Betta, G -F Dalla; Bosisio, Luciano; Darbo, Giovanni; Gabos, Paolo; Gemme, Claudia; Koehler, Michael; La Rosa, Alessandro; Parzefall, Ulrich; Pernegger, Heinz; Piemonte, Claudio; Povoli, Marco; Rachevskaia, Irina; Ronchin, Sabina; Wiik, Liv; Zoboli, Aanrea; Zorzi, Nicola

    2009-01-01

    We report on the electrical and functional characterization of 3D Double-side, Double-Type-Column (3D- DDTC) detectors fabricated on p-type substrates. Results relevant to detectors in the diode, strip and pixel configurations are presented, and demonstrate a clear improvement in the charge collection performance compared to the first prototypes of these detectors.

  14. Synthesis, labelling and biodistribution of N-isopropyl 131I-p-iodoamhetamine (131IAMP)

    International Nuclear Information System (INIS)

    Godoy, N.; Reveco, P.; Mena, P.; Gil, M.C.

    1986-01-01

    It is possible to synthesize N-isopropyl-p-iodoamphetamine (IAMP) through differents schemes, being the most feasible the iodination of phenylacetic acid. The labelling of this compound with radioidine, by isotope exchange in presence or absence of Cu (II) as catalyst, presents less activity concentration in brain than using Cu (II) with an excess of ascorbic acid as reducing agent of Cu (II). The use of ascorbic acid in excess allow the formation of Cu (I) in-situ, which may form an Ar-Cu-I complex, favouring the isotope nucleophilic substitution reaction, obtaining 131 IAMP higher radiochemical purity and better cerebral uptake. (Author)

  15. Silicon radiation detector analysis using back electron beam induced current

    International Nuclear Information System (INIS)

    Guye, R.

    1987-01-01

    A new technique for the observation and analysis of defects in silicon radiation detectors is described. This method uses an electron beam from a scanning electron microscope (SEM) impinging on the rear side of the p + n junction of the silicon detector, which itself is active and detects the electron beam induced current (EBIC). It is shown that this current is a sensitive probe of localized trapping centers, either at the junction surface or somewhere in the volume of the silicon crystal. (orig.)

  16. Diagnostic x-ray spectra measurements using a silicon surface barrier detector

    International Nuclear Information System (INIS)

    Pani, R.; Laitano, R.F.

    1987-01-01

    A silicon surface barrier detector having a low efficiency for x-ray is used to analyse diagnostic x-ray spectra. This characteristic is advantageous in overcoming experimental problems caused by high fluence rates typical of diagnostic x-ray beams. The pulse height distribution obtained with silicon surface barrier detectors is very different from the true photon spectra because of the presence of escaped Compton photons and the fact that detection efficiency falls abruptly when photon energy increases. A detailed analysis of the spurious effects involved in detection is made by a Monte Carlo method. A stripping procedure is described for implementation on a personal computer. The validity of this method is tested by comparison with experimental results obtained with a Ge detector. The spectra obtained with the Si detector are in fairly good agreement with the analogous spectra measured with a Ge detector. The advantages of using Si as opposed to Ge detectors in x-ray spectrometry are: its simplicity of use, its greater economy for use in routine diagnostic x-ray spectroscopy and the possibility that the stripping procedure can be implemented on a personal computer. (author)

  17. Department of Radiation Detectors - Overview

    International Nuclear Information System (INIS)

    Piekoszewski, J.

    1997-01-01

    Work carried out in 1996 in the Department of Radiation Detectors concentrated on three subjects: (i) Semiconductor Detectors (ii) X-ray Tube Generators (iii) Material Modification Using Ion and Plasma Beams. The Departamental objectives are: a search for new types of detectors, adapting modern technologies (especially of industrial microelectronics) to detector manufacturing, producing unique detectors tailored for physics experiments, manufacturing standard detectors for radiation measuring instruments. These objectives were accomplished in 1996 by: research on unique detectors for nuclear physics (e.g. a spherical set of particle detectors silicon ball), detectors for particle identification), development of technology of high-resistivity silicon detectors HRSi (grant proposal), development of thermoelectric cooling systems (grant proposal), research on p-i-n photodiode-based personal dosimeters, study of applicability of industrial planar technology in producing detectors, manufacturing detectors developed in previous years, re-generating and servicing customer detectors of various origin. The Department conducts research on the design and technology involved in producing X-ray generators based on X-ray tubes of special construction. Various tube models and their power supplies were developed. Some work has also been devoted to the detection and dosimetry of X-rays. X-ray tube generators are applied to non-destructive testing and are components of analytical systems such as: X-ray fluorescence chemical composition analysis, gauges of layer thickness and composition stress measurements, on-line control of processes, others where an X-ray tube may replace a radio-isotope source. In 1996, the Department: reviewed the domestic demand for X-ray generators, developed an X-ray generator for diagnosis of ostheroporosis of human limbs, prepared a grant proposal for the development of a new instrument for radiotherapy, the so-called needle-like X-ray tube. (author)

  18. Department of Radiation Detectors - Overview

    Energy Technology Data Exchange (ETDEWEB)

    Piekoszewski, J. [Soltan Inst. for Nuclear Studies, Otwock-Swierk (Poland)

    1997-12-31

    Work carried out in 1996 in the Department of Radiation Detectors concentrated on three subjects: (i) Semiconductor Detectors (ii) X-ray Tube Generators (iii) Material Modification Using Ion and Plasma Beams. The Departamental objectives are: a search for new types of detectors, adapting modern technologies (especially of industrial microelectronics) to detector manufacturing, producing unique detectors tailored for physics experiments, manufacturing standard detectors for radiation measuring instruments. These objectives were accomplished in 1996 by: research on unique detectors for nuclear physics (e.g. a spherical set of particle detectors silicon ball), detectors for particle identification), development of technology of high-resistivity silicon detectors HRSi (grant proposal), development of thermoelectric cooling systems (grant proposal), research on p-i-n photodiode-based personal dosimeters, study of applicability of industrial planar technology in producing detectors, manufacturing detectors developed in previous years, re-generating and servicing customer detectors of various origin. The Department conducts research on the design and technology involved in producing X-ray generators based on X-ray tubes of special construction. Various tube models and their power supplies were developed. Some work has also been devoted to the detection and dosimetry of X-rays. X-ray tube generators are applied to non-destructive testing and are components of analytical systems such as: X-ray fluorescence chemical composition analysis, gauges of layer thickness and composition stress measurements, on-line control of processes, others where an X-ray tube may replace a radio-isotope source. In 1996, the Department: reviewed the domestic demand for X-ray generators, developed an X-ray generator for diagnosis of ostheroporosis of human limbs, prepared a grant proposal for the development of a new instrument for radiotherapy, the so-called needle-like X-ray tube. (author).

  19. Automatic α-spectrometry using surface barrier detectors

    International Nuclear Information System (INIS)

    Czarwinski, R.; Loessner, V.; Klucke, H.; Krause, J.

    1984-01-01

    A measurement system has been developed for the routine determination of transuranics in biosamples by α-spectrometry. It employs high-resolution surface-barrier detectors and can be operated automatically by means of an integrated CAMAC system. For 241 Am, the minimum detectable activity is 2.4 x 10 -3 Bq. (author)

  20. Use of the n,p scattering reaction for neutron flux measurements

    International Nuclear Information System (INIS)

    Czirr, J.B.

    1977-01-01

    Several contemporary proton-recoil detectors are described and compared. These detectors have been used for neutron-spectrum measurements over various portions of the 10-keV-to-20-MeV energy range. Several factors which limit the accuracy of the results are compared quantitatively. General suggestions are given for setting and using standard cross sections and for future developments using the n,p scattering reaction

  1. Annealing effect on I-V characteristic of n-ZnO-p-InSe heterojunction

    Directory of Open Access Journals (Sweden)

    Kovalyuk Z. D.

    2015-12-01

    Full Text Available The article is devoted to studying of influence of vacuum low-temperature annealing on the electrical and photoelectric characteristics of n-ZnO-p-InSe heterostructure. Indium monoselenide (InSe is a semiconductor of the A3B6 group of layered compounds. The basic unit consists of two planes of metal atoms sandwiched between two planes of chalcogen atoms (Se-In-In-Se. The absence of dangling bonds on InSe cleaved surface makes it possible to use this semiconductor as a substrate for fabrication of heterostructures based on semiconductor materials with different symmetries and lattice spacings. Zinc oxide (ZnO is the most suitable material for window materials and solar cells buffer layers application due to its marvelous transparency in the range of visible region. InSe single crystals were grown by the Bridgman technique from a nonstoichiometric melt and characterized by a pronounced layered structure along the whole length of a sample. ZnO thin oxide film was formed on freshly cleaved van der Waals surface of InSe layered crystal. n-ZnO-p-InSe heterostructure was prepared by the method of high-frequency magnetron sputtering. Sensitivity spectral areas were identified by MDR-3 monochromator with a resolution of 2.6 nm/mm. The current-voltage characteristics of the n-ZnO-p-InSe heterostructures showed a clearly pronounced diode character. In the forward bias of the initial samples, the diode factor had the value 3.7 at room temperature. It is shown that vacuum low-temperature annealing reduces shunt currents of the heterojunction, which is reflected in the decrease in the values of n from 3.7 to 2.7.

  2. The Belle II imaging Time-of-Propagation (iTOP) detector

    Science.gov (United States)

    Fast, J.; Belle II Barrel Particle Identification Group

    2017-12-01

    High precision flavor physics measurements are an essential complement to the direct searches for new physics at the LHC ATLAS and CMS experiments. Such measurements will be performed using the upgraded Belle II detector that will take data at the SuperKEKB accelerator. With 40x the luminosity of KEKB, the detector systems must operate efficiently at much higher rates than the original Belle detector. A central element of the upgrade is the barrel particle identification system. Belle II has built and installed an imaging-Time-of-Propagation (iTOP) detector. The iTOP uses quartz optics as Cherenkov radiators. The photons are transported down the quartz bars via total internal reflection with a spherical mirror at the forward end to reflect photons to the backward end where they are imaged onto an array of segmented Micro-Channel Plate Photo-Multiplier Tubes (MCP-PMTs). The system is read out using giga-samples per second waveform sampling Application-Specific Integrated Circuits (ASICs). The combined timing and spatial distribution of the photons for each event are used to determine particle species. This paper provides an overview of the iTOP system.

  3. P-GaN/ZnO nanorod heterojunction LEDs—effect of carrier concentration in p-GaN

    Science.gov (United States)

    Ng, A. M. C.; Chen, X. Y.; Fang, F.; Djurišić, A. B.; Chan, W. K.; Cheah, K. W.

    2011-12-01

    We studied the effect of carrier concentration in p-GaN substrate on the performance of p-GaN/n-ZnO nanorod heterojunction LEDs. ZnO nanorods were electrodeposited on commercial p-GaN wafers in a two electrode system from aqueous solutions of zinc nitrate and hexamethylenetetramine. The morphology and optical properties of ZnO nanorods were studied using photoluminescence and electron microscopy, and the LED device performance was studied by electroluminescence (EL) and I-V measurements.

  4. Investigations of thin p-GaN light-emitting diodes

    DEFF Research Database (Denmark)

    Fadil, Ahmed; Ou, Yiyu; Iida, Daisuke

    2016-01-01

    We investigate device performance of InGaN light-emitting diodes with a 30-nm p-GaN layer. The metallization used to separate the p-contact from plasmonic metals, reveals limitations on current spreading which reduces surface plasmonic enhancement.......We investigate device performance of InGaN light-emitting diodes with a 30-nm p-GaN layer. The metallization used to separate the p-contact from plasmonic metals, reveals limitations on current spreading which reduces surface plasmonic enhancement....

  5. Comparison of electrical performances of two n-in-p detectors with different implant type of guard ring by TCAD simulation

    Science.gov (United States)

    Mekheldi, Mohammed; Oussalah, Slimane; Lounis, Abdenour; Brihi, Nourredine

    This paper presents a preliminary comparative study for two different guard rings structures in the purpose of evaluating their electrical performances. The two structures are based on the n-in-p technology with different implant type of guard rings. I-V characteristics have been simulated using Silvaco/ATLAS software for both structures and compared for various parameters of substrate, guard ring and oxide. Simulation results show that the shape of leakage current is almost the same in all simulations but in terms of breakdown voltage, n-in-p structure with n-type guard rings ensures high voltage stability.

  6. Flexible X-ray detector based on sliced lead iodide crystal

    Energy Technology Data Exchange (ETDEWEB)

    Sun, Hui; Gao, Xiuying [College of Optoelectronic Technology, Chengdu University of Information Technology, Chengdu (China); Department of Materials Science, Sichuan University, Chengdu (China); Zhao, Beijun [Department of Materials Science, Sichuan University, Chengdu (China); Yang, Dingyu; Wangyang, Peihua; Zhu, Xinghua [College of Optoelectronic Technology, Chengdu University of Information Technology, Chengdu (China)

    2017-02-15

    A promising flexible X-ray detector based on inorganic semiconductor PbI{sub 2} crystal is reported. The sliced crystals mechanically cleaved from an as-grown PbI{sub 2} crystal act as the absorber directly converting the impinging X-ray photons to electron hole pairs. Due to the ductile feature of the PbI{sub 2} crystal, the detector can be operated under a highly curved state with the strain on the top surface up to 1.03% and still maintaining effective detection performance. The stable photocurrent and fast response were obtained with the detector repeated bending to a strain of 1.03% for 100 cycles. This work presents an approach for developing efficient and cost-effective PbI{sub 2}-based flexible X-ray detector. Photocurrent responses of the flexible PbI{sub 2} X-ray detector with the strain on the top surface up to 1.03% proposed in this work with the cross sectional structure and curved detector photograph as insets. (copyright 2016 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  7. A Detector for (n,gamma) Cross Section Measurements

    Energy Technology Data Exchange (ETDEWEB)

    Hellstroem, J; Beshai, S

    1971-09-15

    A new detector to be used for determining total (n,gamma) cross sections has been developed in this laboratory. The detector is a large liquid scintillator of approximately 4pi geometry. When used in an experiment the overall time resolution was found to be 10 ns

  8. 3D Detectors for Synchrotron Applications

    CERN Document Server

    Pennicard, D

    2009-01-01

    3D detectors are a novel variety of photodiode radiation detector, invented by Parker, Kenney and Segal (1997). Instead of having n- and p-type contacts on the front and back surfaces of a silicon substrate, like a standard photodiode, they have columns of doped material passing through the thickness of the silicon. This structure means that the detector can combine a reasonable substrate thickness with a very small electrode spacing, resulting in a low depletion voltage, fast charge collection and low charge sharing. These detectors have a couple of promising applications. Their fast charge collection and low depletion voltage should make them very radiation-tolerant. So, they could be used for future particle physics experiments at the Super Large Hadron Collider (SLHC), where high levels of radiation damage are expected. Also, their low charge sharing means they could potentially improve X-ray diffraction measurements at synchrotrons such as Diamond Light Source. This would allow these experiments, for exa...

  9. Units of signals in the surface and underground scintillation detectors of the Yakutsk array

    International Nuclear Information System (INIS)

    Dedenko, L G; Fedorova, G F; Roganova, T M

    2013-01-01

    Signals in the surface and underground scintillation detectors from the extensive air shower particles at the Yakutsk array are measured in some practical units. These units are signals in detectors caused by the near vertical muons. These signals from the near vertical muons in the surface and underground detectors have been simulated with the help of the GEANT4 package. These simulations follow up the real experimental calibration of the surface and underground detectors carried out at the Yakutsk array. Results of simulations show the noticeable difference of ∼5% in energies deposited in these two types of detectors. This difference should be taken into account to interpret correctly data on the fraction of muons observed at the Yakutsk array and to make real conclusions about the composition of the primary cosmic radiation at ultra-high energies.

  10. TFTR alpha extraction and measurement: Development and testing of advanced alpha detectors: Final report

    International Nuclear Information System (INIS)

    Wehring, B.W.

    1988-01-01

    Advanced alpha-particle detectors made of heavy elements were investigated as alternatives to silicon surface-barrier detectors for the ''foil-neutralization technique'' of alpha-particle diagnostics in fusion reactors with high neutron backgrounds. From an extensive literature review, it was decided that HgI 2 would make a more suitable detector for alpha-particle diagnostics than other heavy element detectors such as CdTe. Thus, HgI 2 detectors were designed and fabricated. Experimental tests were performed to determine detector characteristics and detector responses to alpha particles. Radiation noise measurements were also performed using the North Carolina State University PULSTAR nuclear reactor for both the HgI 2 detectors and commercial Si(Au) surface barrier detectors. 15 refs., 1 fig

  11. Department of Radiation Detectors: Overview

    International Nuclear Information System (INIS)

    Piekoszewski, J.

    1999-01-01

    CCD camera for imaging X-ray beams. In accomplishment of the above the Department cooperated with Dora Power Systems company. MATERIAL MODIFICATION USING ION AND PLASMA BEAMS: The technology of modifying surfaces of industrially used materials by means of continuous and pulsed energy beams has been intensely studied for more than 20 years. In some fields it is presently utilized on a broad scale in industry. A significant role among various methods is played by continuous or pulsed ion and plasma beams. The P-IX Department jointly with the P-V Department utilizes some unique sources of intense ion-plasma pulses, and makes use of intense continuous ion beams available in the P-I Department. The main objectives of the Department in this field are: searching for new, original ways of modifying surface properties of solid materials by means of pulsed plasma beams, implementation in the Institute and thus in the country the ion implantation technique as a method of improving the quality of parts of machinery and tools applied in industry. These objectives were in 1998 accomplished particularly by: advancing the construction of ion source built to improve quality of parts of machinery and tools applied in industry, research on metal-ceramic mixing (aimed at improving their tribological properties), reconnaissance on the market of commercial implantation services in industry, advancing diagnostics of pulsed plasma beams (power vs time measurement). (author)

  12. A theoretical investigation of the N2O + SO2 reaction on surfaces of P-doped C60 nanocage and Si-doped B30N30 nanocage

    Directory of Open Access Journals (Sweden)

    Meysam Najafi

    Full Text Available The mechanism of N2O reduction via SO2 on surfaces of P-doped C60 and Si-doped B30N30 by density functional theory were investigated. The P and Si adsorption energies on surface of C60 and B30N30 were calculated to be −287.5 and −312.1 kcal/mol, respectively. The decomposition of C60-P-N2O and B30N30-Si-N2O and reduction of C60-P-O∗ and B30N30-Si-O∗ by SO2 molecule were investigated. The B30N30-Si-O∗ has lower activation energy and has more negative ΔGad rather than C60-P-O∗ and therefore the process of B30N30-Si-O∗ + SO2 → B30N30-Si + SO3 was spontaneous more than C60-P-O∗ + SO2 → C60-P + SO3 from thermodynamic view point. Results show that activation energies for B30N30-Si-O∗ + N2O → B30N30-Si-O2 + N2 and C60-P-O∗ + N2O → C60-P-O2 + N2 reactions were 33.23 and 35.82 kcal/mol, respectively. The results show that P-doped C60 and Si-doped B30N30 can be observed as a real catalysts for the reduction of N2O. Keywords: Atom doping, Catalyst, Nanocage, Adsorption, N2O reduction

  13. Status of the CMS Phase I pixel detector upgrade

    Energy Technology Data Exchange (ETDEWEB)

    Spannagel, S., E-mail: simon.spannagel@desy.de

    2016-09-21

    A new pixel detector for the CMS experiment is being built, owing to the instantaneous luminosities anticipated for the Phase I Upgrade of the LHC. The new CMS pixel detector provides four-hit tracking while featuring a significantly reduced material budget as well as new cooling and powering schemes. A new front-end readout chip mitigates buffering and bandwidth limitations, and comprises a low-threshold comparator. These improvements allow the new pixel detector to sustain and improve the efficiency of the current pixel tracker at the increased requirements imposed by high luminosities and pile-up. This contribution gives an overview of the design of the upgraded pixel detector and the status of the upgrade project, and presents test beam performance measurements of the production read-out chip.

  14. Status of the CMS Phase I Pixel Detector Upgrade

    CERN Document Server

    Spannagel, Simon

    2016-09-21

    A new pixel detector for the CMS experiment is being built, owing to the instantaneous luminosities anticipated for the Phase~I Upgrade of the LHC. The new CMS pixel detector provides four-hit tracking while featuring a significantly reduced material budget as well as new cooling and powering schemes. A new front-end readout chip mitigates buffering and bandwidth limitations, and comprises a low-threshold comparator. These improvements allow the new pixel detector to sustain and improve the efficiency of the current pixel tracker at the increased requirements imposed by high luminosities and pile-up. This contribution gives an overview of the design of the upgraded pixel detector and the status of the upgrade project, and presents test beam performance measurements of the production read-out chip.

  15. Detection alpha particles and Cf-252 fission fragments with track solid detectors and with surface barrier detectors: efficiency determination

    International Nuclear Information System (INIS)

    Khouri, M.T.F.C.; Koskinas, M.F.; Andrade, C. de; Vilela, E.C.; Hinostroza, H.; Kaschiny, J.R.A.; Costa, M.S. da; Rizzo, P.; Santos, W.M.S.

    1990-01-01

    The technique of particle detection by solid track detectors, types of developing and analysis of results are presented. Efficiency measurements of alpha particle detection with Makrofol e and surface barrier detector are made. Detection of Cf-252 fission fragments is shown. (L.C.)

  16. Study of charge transport in silicon detectors: Non-irradiated and irradiated

    International Nuclear Information System (INIS)

    Leroy, C.; Roy, P.; Casse, G.; Glaser, M.; Grigoriev, E.; Lemeilleur, F.

    1999-01-01

    The electrical characteristics of silicon detectors (standard planar float zone and MESA detectors) as a function of the particle fluence can be extracted by the application of a model describing the transport of charge carriers generated in the detectors by ionizing particles. The current pulse response induced by α and β particles in non-irradiated detectors and detectors irradiated up to fluences PHI ∼ 3 · 10 14 particles/cm 2 is reproduced via this model: i) by adding a small n-type region 15 μm deep on the p + side for the detectors at fluences beyond the n to p-type inversion and ii) for the MESA detectors, by considering one additional dead layer of 14 μm (observed experimentally) on each side of the detector, and introducing a second (delayed) component to the current pulse response. For both types of detectors, the model gives mobilities decreasing linearily up to fluences of about 5·10 13 particles/cm 2 and converging, beyond, to saturation values of about 1050 cm 2 /Vs and 450 cm 2 /Vs for electrons and holes, respectively. At a fluence PHI ∼ 10 14 particles/cm 2 (corresponding to about ten years of operation at the CERN-LHC), charge collection deficits of about 14% for β particles, 25% for α particles incident on the front and 35% for α particles incident on the back of the detector are found for both type of detectors

  17. Toward an Ecologically Optimized N:P Recovery from Wastewater by Microalgae

    Science.gov (United States)

    Fernandes, Tânia V.; Suárez-Muñoz, María; Trebuch, Lukas M.; Verbraak, Paul J.; Van de Waal, Dedmer B.

    2017-01-01

    Global stores of important resources such as phosphorus (P) are being rapidly depleted, while the excessive use of nutrients has led to the enrichment of surface waters worldwide. Ideally, nutrients would be recovered from wastewater, which will not only prevent eutrophication but also provide access to alternative nutrient stores. Current state-of-the-art wastewater treatment technologies are effective in removing these nutrients from wastewater, yet they can only recover P and often in an insufficient way. Microalgae, however, can effectively assimilate P and nitrogen (N), as well as other macro- and micronutrients, allowing these nutrients to be recovered into valuable products that can be used to close nutrient cycles (e.g., fertilizer, bioplastics, color dyes, and bulk chemicals). Here, we show that the green alga Chlorella sorokiniana is able to remove all inorganic N and P present in concentrated toilet wastewater (i.e., black water) with N:P ratios ranging between 15 and 26. However, the N and P uptake by the algae is imbalanced relative to the wastewater N:P stoichiometry, resulting in a rapid removal of P but relatively slower removal of N. Here, we discuss how ecological principles such as ecological stoichiometry and resource-ratio theory may help optimize N:P removal and allow for more effective recovery of N and P from black water. PMID:28955317

  18. Toward an Ecologically Optimized N:P Recovery from Wastewater by Microalgae

    Directory of Open Access Journals (Sweden)

    Tânia V. Fernandes

    2017-09-01

    Full Text Available Global stores of important resources such as phosphorus (P are being rapidly depleted, while the excessive use of nutrients has led to the enrichment of surface waters worldwide. Ideally, nutrients would be recovered from wastewater, which will not only prevent eutrophication but also provide access to alternative nutrient stores. Current state-of-the-art wastewater treatment technologies are effective in removing these nutrients from wastewater, yet they can only recover P and often in an insufficient way. Microalgae, however, can effectively assimilate P and nitrogen (N, as well as other macro- and micronutrients, allowing these nutrients to be recovered into valuable products that can be used to close nutrient cycles (e.g., fertilizer, bioplastics, color dyes, and bulk chemicals. Here, we show that the green alga Chlorella sorokiniana is able to remove all inorganic N and P present in concentrated toilet wastewater (i.e., black water with N:P ratios ranging between 15 and 26. However, the N and P uptake by the algae is imbalanced relative to the wastewater N:P stoichiometry, resulting in a rapid removal of P but relatively slower removal of N. Here, we discuss how ecological principles such as ecological stoichiometry and resource-ratio theory may help optimize N:P removal and allow for more effective recovery of N and P from black water.

  19. Radiation flaw detector for testing non-uniform surface bodies of revolution

    International Nuclear Information System (INIS)

    Valevich, M.I.

    1984-01-01

    Radiation flaw detector for testing bodies of revolution with non-uniform surface, welded joints, etc., based on spatial filtration and differentiation of ionizing radiation flux has been described. The calculation of the most important unit of flaw detector - integrators - is made. Experimental studies of the sensitivity have shown, that the radiation flaw detector can be used for rapid testing of products with the sensitivity comparable with the sensitivity of radiographic testing of steel

  20. Cross sections for (p,n) and (d,2n) reactions on /sup 79/Br and /sup 127/I: An evaluation of literature and model calculated results

    Energy Technology Data Exchange (ETDEWEB)

    Lanier, R.G.; Mustafa, M.G.; West, H.I. Jr.

    1989-02-01

    We have evaluated (p,n) and (d,2n) cross sections on /sup 79/Br and /sup 127/I, and made these cross sections available for test diagnostics. We believe that these interim cross sections are of reasonable accuracy and should be used for diagnostic interpretations until more precise measurements can be made. Our evaluation consisted of a literature search and an examination of the available experimental data. These data were supplemented by statistical model calculations using both the STAPRE and ALICE codes. We found reasonably good measured data (from threshold to the peak of the excitation function) for the (p,n) reaction on both /sup 79/Br and /sup 127/I. The literature data for the (d,2n) reaction on /sup 127/I are questionable and no data were found for the (d,2n) reaction on /sup 79/Br. We have, therefore, relied completely on calculations for the (d,2n) cross sections for both /sup 79/Br and /sup 127/I. 4 figs., 5 tabs.

  1. SPECT brain imaging with N-isopropyl [123I]-p-iodoamphetamine

    International Nuclear Information System (INIS)

    Holman, B.L.; Hill, T.C.; Magistretti, P.L.

    1985-01-01

    N-isopropyl-[ 123 I]-p-iodoamphetamine is a lipophilic tracer that passes readily across the blood-brain barrier and is retained long enough to permit planar and tomographic imaging. Its distribution in the brain is proportional to blood flow, and its brain concentration remains unchanged between 30 min and 1 hr after intravenous injection. Tomographic imaging demonstrates increased activity in the gray matter, basal ganglia, and thalamus as would be expected with a cerebral perfusion tracer. In patients with acute cerebral infarction, decreased perfusion occurs immediately with the onset of symptoms. The technique also has utility in epilepsy in defining the abnormal focus in patients with medically intractable temporal-lobe epilepsy. This technique should prove to be a routine nuclear medicine procedure for the evaluation of cerebral perfusion

  2. Photovoltaic characteristics of n(+)pp(+) InP solar cells grown by OMVPE

    Science.gov (United States)

    Tyagi, S.; Singh, K.; Bhimnathwala, H.; Ghandhi, S. K.; Borrego, J. M.

    1990-01-01

    The photovoltaic characteristics of n(+)/p/p(+) homojunction InP solar cells fabricated by organometallic vapor-phase epitaxy (OMVPE) are described. The cells are characterized by I-V, C-V and quantum efficiency measurements, and simulations are used to obtain various device and material parameters. The I-V characteristics show a high recombination rate in the depletion region; this is shown to be independent of the impurity used. It is shown that cadmium is easier to use as an acceptor for the p base and p(+) buffer and is therefore beneficial. The high quantum efficiency of 98 percent at long wavelengths measured in these cells indicates a very good collection efficiency in the base. The short-wavelength quantum efficiency is poor, indicating a high surface recombination.

  3. 32-element beta detector developed at the Institute of Electron Technology (ITE)

    Science.gov (United States)

    Wegrzecki, Maciej; Yakushev, Alexander; Bar, Jan; Budzyński, Tadeusz; Grabiec, Piotr; Kłos, Helena; Panas, Andrzej; Słysz, Wojciech; Stolarski, Maciej; Szmigiel, Dariusz; Wegrzecka, Iwona; Zaborowski, Michał

    2014-08-01

    The paper presents the design, technology and parameters of a new .silicon detector for detection of electrons (below named as beta detector) developed at the Institute of Electron Technology (ITE). The detector will be used for research on transactinide elements at the GSI Helmholtzzentrum für Schwerionenforschung GmbH, Darmstadt (GSI). The detector consists of a monolithic 32-element array with an active area diameter of 90 mm and a thickness of 0.9 mm. The starting material is a high-resistivity ν silicon wafer (5 kΩcm resistivity). 32 planar p+-ν junctions are formed by boron diffusion on the top side of the wafer. On the bottom side, an n+ region, which forms a common cathode, is formed on the entire surface by phosphorus diffusion. The array is mounted on a special epoxy-glass laminate substrate, copper-clad on both sides. Two model detectors have been fabricated and studied. Very good electrical parameters have been achieved. For the first array, with supply voltage VR = 20 V, the minimum dark current was 8 nA, the maximum dark current 97.1 nA, and the average dark current 25.1 nA. For the second array, it was 11.5 nA, 378.8 nA and 40.0 nA respectively.

  4. Measurement of the $W+$ jets differential cross-sections in $p\\bar{p}$ collisions at $\\sqrt{s} = 1.96$ TeV using the CDF II Detector

    Energy Technology Data Exchange (ETDEWEB)

    Driutti, Anna [Univ. of Udine (Italy)

    2016-01-01

    In this thesis the measurements of differential cross sections for the production of the $W$-boson in association with jets in $p\\bar{p}$ collisions at $\\sqrt{s} = 1.96$ TeV are presented. The measurements are based on 9.0 fb$^{-1}$ of CDF Run II data (i.e., the full dataset). Only events in which the W-boson decays leptonically (i.e., W → ev and W → μv)and at least one jet is present are considered. The lepton candidates are required to have a transverse energy $E^{\\ell}_T > 25$GeV and pseudorapidity in the range |n| < 1 whereas, the jets are reconstructed using the JETCLU algorithm with a radius of 0.4 requiring transverse energy $E^{jet}_T > 25$GeV and pseudorapidity in the range |ηjet| < 2. The reconstructed W-boson transverse mass should be greater than 40GeV/c2. The differential cross sections as a function of the jet multiplicity ($N$ > or = to 1, 2, 3, 4) and the leading jet transverse energy, are measured separately for each decay channel and then combined. For a meaningful comparison with theory the measured cross-sections are unfolded to remove detector effects. The resulting particle-level cross-sections are compared to theoretical predictions.

  5. Micromegas detector for $^{33}$S(n,$\\alpha$) cross section measurement at n_TOF

    CERN Multimedia

    The present proposal is a consequence of the successful tests performed in 2011 related to the Letter of Intent CERN-INTC-2010-023/I-092. The main goal of this proposal is a first (n,$\\alpha$) cross section measurement with the Micromegas detector presently running at n_TOF for monitoring purposes and fission cross section measurements. The $^{33}$S(n,$\\alpha$) cross section is of interest in astrophysics mainly due to the origin of $^{36}$S which is still an open question. $^{33}$S is also of interest in medical physics since it has been proposed as a possible/alternative cooperating target to boron neutron capture therapy. Important discrepancies between previous measurements of $^{33}$S(n,$\\alpha$) cross section and especially between the resonance parameters are found in the literature. We propose to measure the (n,$\\alpha$) cross section of the stable isotope $^{33}$S in the energy range up to 300 keV covering the astrophysical range of interest. The possibility of increasing this energy range will be st...

  6. Hydrogen Passivation of N(+)P and P(+)N Heteroepitaxial InP Solar Cell Structures

    Science.gov (United States)

    Chatterjee, B.; Davis, W. C.; Ringel, S. A.; Hoffman, R., Jr.

    1995-01-01

    Dislocations and related point defect complexes caused by lattice mismatch currently limit the performance of heteroepitaxial InP cells by introducing shunting paths across the active junction and by the formation of deep traps within the base region. We have previously demonstrated that plasma hydrogenation is an effective and stable means to passivate the electrical activity of such defects in specially designed heteroepitaxial InP test structures to probe hydrogen passivation at typical base depths within a cell structure. In this work, we present our results on the hydrogen passivation of actual heteroepitaxial n(+)p and p(+)n InP cell structures grown on GaAs substrates by metalorganic chemical vapor deposition (MOCVD). We have found that a 2 hour exposure to a 13.56 MHz hydrogen plasma at 275 C reduces the deep level concentration in the base regions of both n(+)p and p(+)n heteroepitaxial InP cell structures from as-grown values of 5 - 7 x 10(exp 14)/cc, down to 3 - 5 x 10(exp 12)/cc. All dopants were successfully reactivated by a 400 C, 5 minute anneal With no detectable activation of deep levels. I-V analysis indicated a subsequent approx. 100 fold decrease In reverse leakage current at -1 volt reverse bias, and an improved built in voltage for the p(+)n structures. ln addition to being passivated,dislocations are also shown to participate in secondary interactions during hydrogenation. We find that the presence of dislocations enhances hydrogen diffusion into the cell structure, and lowers the apparent dissociation energy of Zn-H complexes from 1.19 eV for homoepitaxial Zn-doped InP to 1.12 eV for heteroepitaxial Zn-doped InP. This is explained by additional hydrogen trapping at dislocations subsequent to the reactivation of Zn dopants after hydrogenation.

  7. Optically controlled reflection modulator using GaAs-AlGaAs n-i-p-i/multiple-quantum-well structures

    Science.gov (United States)

    Law, K.-K.; Simes, R. J.; Coldren, L. A.; Gossard, A. C.; Maserjian, J.

    1989-01-01

    An optically controlled reflection modulator has been demonstrated that consists of a combination of a GaAs-AlGaAs n-i-p-i doping structure with a multiple-quantum-well structures on top of a distributed Bragg reflector, all grown by MBE. A modulation of approximately 60 percent is obtained on the test structure, corresponding to a differential change of absorption coefficient in the quantum wells of approximately 7500/cm. Changes in reflectance can be observed with a control beam power as low as 1.5 microW. This device structure has the potential of being developed as an optically addressed spatial light modulator for optical information processing.

  8. Cross Section Measurements of the {sup 58}Ni (n, p) {sup 58}Co and {sup 29}Si (n, alpha) Reactions in the Energy Range 2.2 to 3.8 MeV

    Energy Technology Data Exchange (ETDEWEB)

    Konijn, J; Lauber, A

    1963-08-15

    The Si(n, a) Mg and Ni(n, p) Co reaction cross-sections have been measured using a surface barrier solid state detector to record the charged particles. Absolute measurements of the neutron flux were made, recording the proton recoils from a thin polyethylene radiator with the solid state detector. Both reaction cross-sections show strong fluctuations as a function of energy, which may be due to the statistical fluctuation of the level densities. Estimations of the level densities of the intermediate nuclei from the relative fluctuations of the cross section curves are in good agreement with those expected on theoretical grounds. The agreement with earlier measurements of the nickel reaction is good, while absolute values for the cross-sections on the silicon reaction have not been reported before in this energy region.

  9. Iodine (p,n) and (d,2n) excitation function measurements

    International Nuclear Information System (INIS)

    West, H.I. Jr.; Nuckolls, R.M.; Mustafa, M.G.; Lanier, R.G.

    1991-01-01

    We have measured the nuclear excitation functions for the reactions 127 I (p,n) 127 Xe and 127 I(d,2n) 127 Xe. These results are being used in the interpretation of data obtained from nuclear test diagnostics. 15 refs., 3 figs., 3 tabs

  10. Hydrogen passivation of n+p and p+n heteroepitaxial InP solar cell structures

    Science.gov (United States)

    Chatterjee, B.; Ringel, S. A.; Hoffman, R., Jr.

    1995-01-01

    High-efficiency, heteroepitaxial (HE) InP solar cells, grown on GaAs, Si or Ge substrates, are desirable for their mechanically strong, light-weight and radiation-hard properties. However, dislocations, caused by lattice mismatch, currently limit the performance of the HE cells. This occurs through shunting paths across the active photovoltaic junction and by the formation of deep levels. In previous work we have demonstrated that plasma hydrogenation is an effective and stable means to passivate the electrical activity of dislocations in specially designed HE InP test structures. In this work, we present the first report of successful hydrogen passivation in actual InP cell structures grown on GaAs substrates by metalorganic chemical vapor deposition (MOCVD). We have found that a 2 hour exposure to a 13.56 MHz hydrogen plasma at 275 C reduces the deep level concentration in HE n+n InP cell structures from as-grown values of approximately 10(exp 15)/cm(exp -3), down to 1-2 x 10(exp 13)/cm(exp -3). The deep levels in the p-type base region of the cell structure match those of our earlier p-type test structures, which were attributed to dislocations or related point defect complexes. All dopants were successfully reactivated by a 400 C, 5 minute anneal with no detectable activation of deep levels. I-V analysis indicated a subsequent approximately 10 fold decrease in reverse leakage current at -1 volt reverse bias, and no change in the forward biased series resistance of the cell structure which indicates complete reactivation of the n+ emitter. Furthermore, electrochemical C-V profiling indicates greatly enhanced passivation depth, and hence hydrogen diffusion, for heteroepitaxial structures when compared with identically processed homoepitaxial n+p InP structures. An analysis of hydrogen diffusion in dislocated InP will be discussed, along with comparisons of passivation effectiveness for n+p versus p+n heteroepitaxial cell configurations. Preliminary hydrogen

  11. Detection of alpha particles and Cf-252 fission fragments with solid track detectors and surface barrier detector. Efficiency calculation

    International Nuclear Information System (INIS)

    Khouri, M.T.F.C.; Koskinas, M.F.; Andrade, C. de; Vilela, E.C.; Hinostroza, H.; Kaschiny, J.E.A.; Costa, M.S. da; Rizzo, P.; Santos, W.M.S.

    1990-01-01

    A technique for particle detection by using track solid detector and also types of revealing and result analysis are presented concerned to Cf-252 fission fragments detection. Measurements of alpha particles detection efficiency using Makrofol E and surface barrier detector are performed. (L.C.J.A.)

  12. Studies of the dependence on oxidation thermal processes of effects on the electrical properties of silicon detectors by fast neutron radiation

    International Nuclear Information System (INIS)

    Li, Zheng; Kraner, H.W.

    1991-11-01

    High resistivity silicon detectors along with MOS capacitors made on five silicon dioxides with different thermal conditions (975 degree C to 1200 degree C) have been exposed to fast neutron irradiation up to the fluence of a few times 10 14 n/cm 2 . New measurement techniques such as capacitance-voltage (C-V) of MOS capacitors and current-voltage (I-V) of back to back diodes (p + -n - - p + if n - is not inverted to p) or resistors (p + -p-p + if inverted) have been introduced in this study in monitoring the possible type-inversion (n→p) under high neutron fluence. No type-inversion in the material underneath SiO 2 and the p + contact has been observed so far in this work for detectors made on the five oxides up to the neutron fluence of a few times 10 13 n/cm 2 . However, it has been found that detectors made on higher temperature oxides (T≤ 1100 degree C) exhibit less leakage current increase at high neutron fluence (φ ≤ 10 13 n/cm 2 )

  13. Integrated Amorphous Silicon p-i-n Temperature Sensor for CMOS Photonics

    Directory of Open Access Journals (Sweden)

    Sandro Rao

    2016-01-01

    Full Text Available Hydrogenated amorphous silicon (a-Si:H shows interesting optoelectronic and technological properties that make it suitable for the fabrication of passive and active micro-photonic devices, compatible moreover with standard microelectronic devices on a microchip. A temperature sensor based on a hydrogenated amorphous silicon p-i-n diode integrated in an optical waveguide for silicon photonics applications is presented here. The linear dependence of the voltage drop across the forward-biased diode on temperature, in a range from 30 °C up to 170 °C, has been used for thermal sensing. A high sensitivity of 11.9 mV/°C in the bias current range of 34–40 nA has been measured. The proposed device is particularly suitable for the continuous temperature monitoring of CMOS-compatible photonic integrated circuits, where the behavior of the on-chip active and passive devices are strongly dependent on their operating temperature.

  14. Solvability of a (p, n-p-type multi-point boundary-value problem for higher-order differential equations

    Directory of Open Access Journals (Sweden)

    Yuji Liu

    2003-12-01

    Full Text Available In this article, we study the differential equation $$ (-1^{n-p} x^{(n}(t=f(t,x(t,x'(t,dots,x^{(n-1}(t, $$ subject to the multi-point boundary conditions $$displaylines{ x^{(i}(0=0 quad hbox{for }i=0,1,dots,p-1,cr x^{(i}(1=0 quad hbox{for }i=p+1,dots,n-1,cr sum_{i=1}^malpha_ix^{(p}(xi_i=0, }$$ where $1le ple n-1$. We establish sufficient conditions for the existence of at least one solution at resonance and another at non-resonance. The emphasis in this paper is that $f$ depends on all higher-order derivatives. Examples are given to illustrate the main results of this article.

  15. Investigation and optimisation of mobile NaI(Tl) and 3He-based neutron detectors for finding point sources

    International Nuclear Information System (INIS)

    Nilsson, Jonas M.C.; Finck, Robert R.; Rääf, Christopher

    2015-01-01

    Neutron radiation produces high-energy gamma radiation through (n,γ) reactions in matter. This can be used to detect neutron sources indirectly using gamma spectrometers. The sensitivity of a gamma spectrometer to neutrons can be amplified by surrounding it with polyvinyl chloride (PVC). The hydrogen in the PVC acts as a moderator and the chlorine emits prompt gammas when a neutron is captured. A 4.7-l 3 He-based mobile neutron detector was compared to a 4-l NaI(Tl)-detector covered with PVC using this principle. Methods were also developed to optimise the measurement parameters of the systems. The detector systems were compared with regard to their ability to find 241 AmBe, 252 Cf and 238 Pu– 13 C neutron sources. Results from stationary measurements were used to calculate optimal integration times as well as minimum detectable neutron emission rates. It was found that the 3 He-based detector was more sensitive to 252 Cf sources whereas the NaI(Tl) detector was more sensitive to 241 AmBe and 238 Pu– 13 C sources. The results also indicated that the sensitivity of the detectors to sources at known distances could theoretically be improved by 60% by changing from fixed integration times to list mode in mobile surveys

  16. Investigation of p-n-junctions in n-InP based on voltage dependence of differential capacity

    International Nuclear Information System (INIS)

    Agaev, Ja.; Atabaev, Kh.; Gazakov, O.; Sadykov, K.B.

    1976-01-01

    The barrier capacity of alloyed p-n transitions on n-InP crystals grown by the crystallization method has been investigated. The transitions have been obtained by fusing In + 3 - 10% Zn. Step-by-step distribution of the impurity concentration in the space charge layer takes place in the alloyed diodes under investigation. The coefficient characterizing the impurity distribution in the space charge layer has been determined. The well-expressed dependence of I/C 2 =f/u) observed both at a room temperature and at the temperature of liquid nitrogen indicates that the density of ground carriers in the p-n regions are constant at a definite distance from the p-n transition. The main parameters of p-n transitions have been determined

  17. Silicon radiation detector

    International Nuclear Information System (INIS)

    Benc, I.; Kerhart, J.; Kopecky, J.; Krca, P.; Veverka, V.; Weidner, M.; Weinova, H.

    1992-01-01

    The silicon radiation detector, which is designed for the detection of electrons with energies above 500 eV and of radiation within the region of 200 to 1100 nm, comprises a PIN or PNN + type photodiode. The active acceptor photodiode is formed by a detector surface of shallow acceptor diffusion surrounded by a collector band of deep acceptor diffusion. The detector surface of shallow P-type diffusion with an acceptor concentration of 10 15 to 10 17 atoms/cm 3 reaches a depth of 40 to 100 nm. One sixth to one eighth of the collector band width is overlapped by the P + collector band at a width of 150 to 300 μm with an acceptor concentration of 10 20 to 10 21 atoms/cm 3 down a depth of 0.5 to 3 μm. This band is covered with a conductive layer, of NiCr for instance. (Z.S.)

  18. GaN-Based Detector Enabling Technology for Next Generation Ultraviolet Planetary Missions

    Science.gov (United States)

    Aslam, S.; Gronoff, G.; Hewagama, T.; Janz, S.; Kotecki, C.

    2012-01-01

    The ternary alloy AlN-GaN-InN system provides several distinct advantages for the development of UV detectors for future planetary missions. First, (InN), (GaN) and (AlN) have direct bandgaps 0.8, 3.4 and 6.2 eV, respectively, with corresponding wavelength cutoffs of 1550 nm, 365 nm and 200 nm. Since they are miscible with each other, these nitrides form complete series of indium gallium nitride (In(sub l-x)Ga(sub x)N) and aluminum gallium nitride (Al(sub l-x)Ga(sub x)N) alloys thus allowing the development of detectors with a wavelength cut-off anywhere in this range. For the 2S0-365 nm spectral wavelength range AlGaN detectors can be designed to give a 1000x solar radiation rejection at cut-off wavelength of 325 nm, than can be achieved with Si based detectors. For tailored wavelength cut-offs in the 365-4S0 nm range, InGaN based detectors can be fabricated, which still give 20-40x better solar radiation rejection than Si based detectors. This reduced need for blocking filters greatly increases the Detective Quantum efficiency (DQE) and simplifies the instrument's optical systems. Second, the wide direct bandgap reduces the thermally generated dark current to levels allowing many observations to be performed at room temperature. Third, compared to narrow bandgap materials, wide bandgap semiconductors are significantly more radiation tolerant. Finally, with the use of an (AI, In)GaN array, the overall system cost is reduced by eliminating stringent Si CCD cooling systems. Compared to silicon, GaN based detectors have superior QE based on a direct bandgap and longer absorption lengths in the UV.

  19. Changing the thickness of two layers: i-ZnO nanorods, p-Cu2O and its influence on the carriers transport mechanism of the p-Cu2O/i-ZnO nanorods/n-IGZO heterojunction.

    Science.gov (United States)

    Ke, Nguyen Huu; Trinh, Le Thi Tuyet; Phung, Pham Kim; Loan, Phan Thi Kieu; Tuan, Dao Anh; Truong, Nguyen Huu; Tran, Cao Vinh; Hung, Le Vu Tuan

    2016-01-01

    In this study, two layers: i-ZnO nanorods and p-Cu2O were fabricated by electrochemical deposition. The fabricating process was the initial formation of ZnO nanorods layer on the n-IGZO thin film which was prepared by sputtering method, then a p-Cu2O layer was deposited on top of rods to form the p-Cu2O/i-ZnO nanorods/n-ZnO heterojunction. The XRD, SEM, UV-VIS, I-V characteristics methods were used to define structure, optical and electrical properties of these heterojunction layers. The fabricating conditions and thickness of the Cu2O layers significantly affected to the formation, microstructure, electrical and optical properties of the junction. The length of i-ZnO nanorods layer in the structure of the heterojunction has strongly affected to the carriers transport mechanism and performance of this heterojunction.

  20. The 4p3(2P) ns, nd configurations of Se I

    International Nuclear Information System (INIS)

    Mazzoni, M.

    1989-01-01

    The photoabsorption spectrum of Se I has been photographed in the 1100-900 A wavelength region, using a flash-pyrolisys system: About twenty lines were observed, most of them for the first time. With the support of Hartree-Fock calculations they have been identified and assigned to the 4p 4 →4p 3 ns 3 P(n=7-14) and 4p 4 →4p 3 nd 3 D (n=5-17) series, both converging on the limit 4p 3 ( 2 P 3/2 ). (orig.)

  1. Study of method of efficiency transference using detectors NaI(Ti)

    International Nuclear Information System (INIS)

    Ramos, Thiago L.; Salgado, César M.

    2017-01-01

    The use of NaI (Tl) scintillation detectors for measurements implies the determination of the detection efficiency as a function of the energy of the incident photons. The efficiency curve can be obtained experimentally with the use of several mono-energy sources calibrated with emission energies covering the whole range of interest or using the Monte Carlo method. The Institute of Nuclear Engineering develops several methodologies using these detectors as they are robust, inexpensive and do not need cooling for their use. The assembly of an experimental arrangement is usually complex, since several factors influence the result affecting reproducibility in measurements, such as: parallelism between source and detector, alignment between source and detector, and accuracy of source-detector distance. In view of such difficulties, an automated positioning system was developed for the source-detector set controlled by a micro controller based on the ARDUINO language in order to guarantee the reproducibility in the experimental arrangements. In the initial phase of this study, a mathematical model was developed in the MCNP-X code using a NaI (Tl) detector. A theoretical validation using the Efficiency Transfer Method was performed at three different positions on the detector's axial axis (10.6 cm, 11.3 cm and 12.0 cm). This method is based on the ratio of effective solid angles. The experimental validation presented maximum relative errors of 7.74% for the position 11.3 cm

  2. Methods of manufacturing a detector device

    International Nuclear Information System (INIS)

    Wotherspoon, J.T.M.

    1982-01-01

    In the manufacture of an infra-red radiation detector device, a body of rho-type cadmium mercury telluride is bombarded with ions to etch away a part of the body and to produce from the etched-away part of the body an excess concentration of mercury which acts as a dopant source converting an adjacent part of the body into n-type material. The energy of the bombarding ions is less than 30 keV, and by appropriately choosing the ion dose this conversion can be effected over a depth considerably greater than the penetration depth of the ions. A p-n junction can be fabricated in this way for a photovoltaic detector. The conductivity type conversion may even be effected through the body thickness. The etching and conversion can be localised by masking part of the body surface against the ion bombardment. (author)

  3. Beta dosimetry with surface barrier detectors

    International Nuclear Information System (INIS)

    Heinzelmann, M.F.M.; Schuren, H.; Dreesen, K.

    1980-01-01

    A small dosimeter to measure the dose rate due to β-radiation in an energy independent fashion is described in detail. A surface barrier semi-conductor detector is used whose thickness of sensitive layer is changed by varying the detector voltage. The integral count rate can then be determined as a function of applied voltage and discrimination thresholds. The integral count rate can be related to β dose rate in an energy independent fashion only for a time constant of 0.25 μs. However, the use of a single channel analyzer permits an energy-independent determination of the β-dose rate with 0.25 or 0.5 μs time constants. The sensitivity of the device as a function of dose rate is investigation up to 600 rad/hr. Furthermore, the sensitivity of the device at a constant dose rate was shown to be uniform up to a dose of 50,000 rads. (UK)

  4. Radiochromic film as a radiotherapy surface-dose detector

    International Nuclear Information System (INIS)

    Butson, M.J.; Metcalfe, P.E.; Wollongong Univ., NSW; Mathur, J.N.

    1996-01-01

    Radiochromic film is shown to be a useful surface-dose detector for radiotherapy x-ray beams. Central-axis percentage surface-dose results as measured by Gafchromic film for a 6 MVp x-ray beam produced by a Varian 2100C Linac at 100 cm SSD are 16%, 25%, 35%, 41% for 10, 20, 30 and 40 cm square field sizes, respectively. Using a simple, uniform light source and a CCD camera connected to an image analysis system, quantitative 3D surface doses are accurately attainable in real time as either numerical data, a black-and-white image or a colour-enhanced image. (Author)

  5. The signal shape from the LHCb vertex locator prototype detectors

    International Nuclear Information System (INIS)

    Charles, M.

    2003-01-01

    Measurements of the SCT128A ASIC pulse shape, when reading out non-irradiated and irradiated prototype detectors for the LHCb VELO, are presented. The detectors studied were two n-on-n prototype detectors fabricated by Hamamatsu, and a p-on-n prototype detector fabricated by MICRON

  6. Study of method of efficiency transference using detectors NaI(Ti); Estudo de método de transferência de eficiência usando detectores NaI(Tl)

    Energy Technology Data Exchange (ETDEWEB)

    Ramos, Thiago L.; Salgado, César M., E-mail: thiago_lins-ramos@hotmail.com, E-mail: otero@ien.gov.br [Instituto de Engenharia Nuclear (IEN/CNEN-RJ), Rio de Janeiro, RJ (Brazil)

    2017-07-01

    The use of NaI (Tl) scintillation detectors for measurements implies the determination of the detection efficiency as a function of the energy of the incident photons. The efficiency curve can be obtained experimentally with the use of several mono-energy sources calibrated with emission energies covering the whole range of interest or using the Monte Carlo method. The Institute of Nuclear Engineering develops several methodologies using these detectors as they are robust, inexpensive and do not need cooling for their use. The assembly of an experimental arrangement is usually complex, since several factors influence the result affecting reproducibility in measurements, such as: parallelism between source and detector, alignment between source and detector, and accuracy of source-detector distance. In view of such difficulties, an automated positioning system was developed for the source-detector set controlled by a micro controller based on the ARDUINO language in order to guarantee the reproducibility in the experimental arrangements. In the initial phase of this study, a mathematical model was developed in the MCNP-X code using a NaI (Tl) detector. A theoretical validation using the Efficiency Transfer Method was performed at three different positions on the detector's axial axis (10.6 cm, 11.3 cm and 12.0 cm). This method is based on the ratio of effective solid angles. The experimental validation presented maximum relative errors of 7.74% for the position 11.3 cm.

  7. Characterization of nanoDot optically stimulated luminescence detectors and high-sensitivity MCP-N thermoluminescent detectors in the 40-300 kVp energy range.

    Science.gov (United States)

    Poirier, Yannick; Kuznetsova, Svetlana; Villarreal-Barajas, Jose Eduardo

    2018-01-01

    To investigate empirically the energy dependence of the detector response of two in vivo luminescence detectors, LiF:Mg,Cu,P (MCP-N) high-sensitivity TLDs and Al 2 O 3 :C OSLDs, in the 40-300-kVp energy range in the context of in vivo surface dose measurement. As these detectors become more prevalent in clinical and preclinical in vivo measurements, knowledge of the variation in the empirical dependence of the measured response of these detectors across a wide spectrum of beam qualities is important. We characterized a large range of beam qualities of three different kilovoltage x-ray units: an Xstrahl 300 Orthovoltage unit, a Precision x-Ray X-RAD 320ix biological irradiator, and a Varian On-Board Imaging x-ray unit. The dose to water was measured in air according to the AAPM's Task Group 61 protocol. The OSLDs and TLDs were irradiated under reference conditions on the surface of a water phantom to provide full backscatter conditions. To assess the change in sensitivity in the long term, we separated the in vivo dosimeters of each type into an experimental and a reference group. The experimental dosimeters were irradiated using the kilovoltage x-ray units at each beam quality used in this investigation, while the reference group received a constant 10 cGy irradiation at 6 MV from a Varian clinical linear accelerator. The individual calibration of each detector was verified in cycles where both groups received a 10 cGy irradiation at 6 MV. The nanoDot OSLDs were highly reproducible, with ±1.5% variation in response following >40 measurement cycles. The TLDs lost ~20% of their signal sensitivity over the course of the study. The relative light output per unit dose to water of the MCP-N TLDs did not vary with beam quality for beam qualities with effective energies <50 keV (~150 kVp/6 mm Al). At higher energies, they showed a reduced (~75-85%) light output per unit dose relative to 6 MV x rays. The nanoDot OSLDs exhibited a very strong (120

  8. Background rejection of n+ surface events in GERDA Phase II

    Science.gov (United States)

    Lehnert, Björn

    2016-05-01

    The GERDA experiment searches for neutrinoless double beta (0vββ) decay in 76Ge using an array of high purity germanium (HPGe) detectors immersed in liquid argon (LAr). Phase II of the experiment uses 30 new broad energy germanium (BEGe) detectors with superior pulse shape discrimination capabilities compared to the previously used semi-coaxial detector design. By far the largest background component for BEGe detectors in GERDA are n+-surface events from 42K β decays which are intrinsic in LAr. The β particles with up to 3.5 MeV can traverse the 0.5 to 0.9 mm thick electrode and deposit energy within the region of interest for the 0vββ decay. However, those events have particular pulse shape features allowing for a strong discrimination. The understanding and simulation of this background, showing a reduction by up to a factor 145 with pulse shape discrimination alone, is presented in this work.

  9. Ultrafast, superhigh gain visible-blind UV detector and optical logic gates based on nonpolar a-axial GaN nanowire

    Science.gov (United States)

    Wang, Xingfu; Zhang, Yong; Chen, Xinman; He, Miao; Liu, Chao; Yin, Yian; Zou, Xianshao; Li, Shuti

    2014-09-01

    Nonpolar a-axial GaN nanowire (NW) was first used to construct the MSM (metal-semiconductor-metal) symmetrical Schottky contact device for application as visible-blind ultraviolet (UV) detector. Without any surface or composition modifications, the fabricated device demonstrated a superior performance through a combination of its high sensitivity (up to 104 A W-1) and EQE value (up to 105), as well as ultrafast (memory storage.Nonpolar a-axial GaN nanowire (NW) was first used to construct the MSM (metal-semiconductor-metal) symmetrical Schottky contact device for application as visible-blind ultraviolet (UV) detector. Without any surface or composition modifications, the fabricated device demonstrated a superior performance through a combination of its high sensitivity (up to 104 A W-1) and EQE value (up to 105), as well as ultrafast (memory storage. Electronic supplementary information (ESI) available: Details of the EDS and SAED data, supplementary results of the UV detector, and the discussion of the transport properties of the MSM Schottky contact devices. See DOI: 10.1039/c4nr03581j

  10. Quasifree (p ,p N ) scattering of light neutron-rich nuclei near N =14

    Science.gov (United States)

    Díaz Fernández, P.; Alvarez-Pol, H.; Crespo, R.; Cravo, E.; Atar, L.; Deltuva, A.; Aumann, T.; Avdeichikov, V.; Beceiro-Novo, S.; Bemmerer, D.; Benlliure, J.; Bertulani, C. A.; Boillos, J. M.; Boretzky, K.; Borge, M. J. G.; Caamaño, M.; Cabanelas, P.; Caesar, C.; Casarejos, E.; Catford, W.; Cederkäll, J.; Chartier, M.; Chulkov, L. V.; Cortina-Gil, D.; Datta Pramanik, U.; Dillmann, I.; Elekes, Z.; Enders, J.; Ershova, O.; Estradé, A.; Farinon, F.; Fernández-Domínguez, B.; Fraile, L. M.; Freer, M.; Galaviz, D.; Geissel, H.; Gernhäuser, R.; Golubev, P.; Göbel, K.; Hagdahl, J.; Heftrich, T.; Heil, M.; Heine, M.; Heinz, A.; Henriques, A.; Holl, M.; Hufnagel, A.; Ignatov, A.; Johansson, H. T.; Jonson, B.; Jurčiukonis, D.; Kalantar-Nayestanaki, N.; Kanungo, R.; Kelic-Heil, A.; Knyazev, A.; Kröll, T.; Kurz, N.; Labiche, M.; Langer, C.; Le Bleis, T.; Lemmon, R.; Lindberg, S.; Machado, J.; Marganiec, J.; Moro, A. M.; Movsesyan, A.; Nacher, E.; Najafi, A.; Nikolskii, E.; Nilsson, T.; Nociforo, C.; Panin, V.; Paschalis, S.; Perea, A.; Petri, M.; Pietras, B.; Pietri, S.; Plag, R.; Reifarth, R.; Ribeiro, G.; Rigollet, C.; Rossi, D.; Röder, M.; Savran, D.; Scheit, H.; Simon, H.; Sorlin, O.; Syndikus, I.; Taylor, J. T.; Tengblad, O.; Thies, R.; Togano, Y.; Vandebrouck, M.; Velho, P.; Volkov, V.; Wagner, A.; Wamers, F.; Weick, H.; Wheldon, C.; Wilson, G.; Winfield, J. S.; Woods, P.; Yakorev, D.; Zhukov, M.; Zilges, A.; Zuber, K.; R3B Collaboration

    2018-02-01

    Background: For many years, quasifree scattering reactions in direct kinematics have been extensively used to study the structure of stable nuclei, demonstrating the potential of this approach. The R 3B collaboration has performed a pilot experiment to study quasifree scattering reactions in inverse kinematics for a stable 12C beam. The results from that experiment constitute the first quasifree scattering results in inverse and complete kinematics. This technique has lately been extended to exotic beams to investigate the evolution of shell structure, which has attracted much interest due to changes in shell structure if the number of protons or neutrons is varied. Purpose: In this work we investigate for the first time the quasifree scattering reactions (p ,p n ) and (p ,2 p ) simultaneously for the same projectile in inverse and complete kinematics for radioactive beams with the aim to study the evolution of single-particle properties from N =14 to N =15 . Method: The structure of the projectiles 23O, 22O, and 21N has been studied simultaneously via (p ,p n ) and (p ,2 p ) quasifree knockout reactions in complete inverse kinematics, allowing the investigation of proton and neutron structure at the same time. The experimental data were collected at the R3B -LAND setup at GSI at beam energies of around 400 MeV/u. Two key observables have been studied to shed light on the structure of those nuclei: the inclusive cross sections and the corresponding momentum distributions. Conclusions: The knockout reactions (p ,p n ) and (p ,2 p ) with radioactive beams in inverse kinematics have provided important and complementary information for the study of shell evolution and structure. For the (p ,p n ) channels, indications of a change in the structure of these nuclei moving from N =14 to N =15 have been observed, i.e., from the 0 d5 /2 shell to the 1 s1 /2 . This supports previous observations of a subshell closure at N =14 for neutron-rich oxygen isotopes and its weakening

  11. Gamma ray energy loss spectra simulation in NaI detectors with the Monte Carlo method

    International Nuclear Information System (INIS)

    Vieira, W.J.

    1982-01-01

    With the aim of studying and applying the Monte Carlo method, a computer code was developed to calculate the pulse height spectra and detector efficiencies for gamma rays incident on NaI (Tl) crystals. The basic detector processes in NaI (Tl) detectors are given together with an outline of Monte Carlo methods and a general review of relevant published works. A detailed description of the application of Monte Carlo methods to ν-ray detection in NaI (Tl) detectors is given. Comparisons are made with published, calculated and experimental, data. (Author) [pt

  12. Synthesis, in vitro pharmacologic characterization, and preclinical evaluation of N-[2-(1'-piperidinyl)ethyl]-3-[{sup 125}I]iodo-4-methoxybenzamide (P[{sup 125}I]MBA) for imaging breast cancer

    Energy Technology Data Exchange (ETDEWEB)

    John, Christy S. E-mail: radcsj@gwumc.edu; Bowen, Wayne D.; Fisher, Susan J.; Lim, Benjamin B.; Geyer, Brian C.; Vilner, Bertold J.; Wahl, Richard L

    1999-05-01

    The goal of this study was to investigate the potential use of a radioiodinated benzamide, N-[2-(1'-piperidinyl)ethyl]-3-iodo[{sup 125}I]-4-methoxybenzamide (P[{sup 125}I]MBA), a sigma receptor binding radioligand for imaging breast cancer. The chemical and radiochemical syntheses of PIMBA are described. The pharmacological evaluation of PIMBA was carried out for sigma-1 and sigma-2 receptor sites. The in vivo pharmacokinetics of the radioiodinated benzamide were determined in rats and comparison of P[{sup 125}I]MBA with Tc-99m sestamibi were made in a rat mammary tumor model. Sigma-1 affinity (K{sub i}) for PIMBA in guinea pig brain membranes using [{sup 3}H](+)pentazocine was found to be 11.82{+-}0.68 nM, whereas sigma-2 affinity in rat liver using [{sup 3}H]DTG (1,3-o-di-tolylguanidine) was 206{+-}11 nM. Sites in guinea pig brain membranes labeled by P[{sup 125}I]MBA showed high affinity for haloperidol, (+)-pentazocine, BD1008, and PIMBA (K{sub i}=4.87{+-}1.49,8.81{+-}1.97,0.057{+-}0.005,46.9{+-}1.8 nM), respectively). Competition binding studies were carried out in human ductal breast carcinoma cells (T47D). A dose-dependent inhibition of specific binding was observed with several sigma ligands. K{sub i} values for the inhibition of P[{sup 125}I]MBA binding in T47D cells for haloperidol, N-[2-(1'-piperidinyl)]ethyl]4-iodobenzamide (IPAB), N-(N-benzylpiperidin-4-yl)-4-iodobenzamide (4-IBP), and PIMBA were found to be 1.30{+-}0.07, 13{+-}1.5, 5.19{+-}2.3, 1.06{+-}0.5 nM, respectively. The in vitro binding data in guinea pig brain membranes and breast cancer cells confirmed binding to sigma sites. The saturation binding of P[{sup 125}I]MBA in T47D cells as studied by Scatchard analysis showed saturable binding, with a K{sub d}=94{+-}7 nM and a B{sub max}=2035{+-}305 fmol/mg of proteins. Biodistribution studies in Sprague-Dawley rats showed a rapid clearance of P[{sup 125}I]MBA from the normal organs. The potential of PIMBA in imaging breast cancer was

  13. Brain perfusion image using N-isopropyl-p-(/sup 123/I) iodoamphetamine. Detection of interhemispheric difference

    Energy Technology Data Exchange (ETDEWEB)

    Matsuda, Hiroshi; Seki, Hiroyasu; Ishida, Hiroko

    1984-12-01

    In brain perfusion images using N-isopropyl-p-(/sup 123/I)iodoamphetamine and rotating gamma camera emission computed tomography, brain maps showing laterality indices (LI) were made for the purpose of detecting intrahemispheric differences. Left (L) and right (R) leteral images were made by adding sagittal section images in each hemisphere, respectively. LI was calculated as follows. LI=100(1 + (R-L)/(R + L)). The normal ranges (mean +- 2 s.d.) of the indices determined by those obtained in five normal right-handed subjects were 103 +- 4 and 103 +- 10 for brain mean and each pixel, respectively. Out of 25 measurements in 22 right-handed patients with cerebrovascular accidents, brain mean LI beyond the normal limits and areas showing abnormal regional LI were observed in 5 (20%) and 21 (84%) measurements, respectively. On the other hand, X-ray CT showed low density areas in only 12 (48%). These brain maps were clinically useful for detecting and quantifying interhemispheric differences in brain perfusion images with N-isopropyl-p-(/sup 123/I)iodoamphetamine. (author). Contains 48 refs.

  14. Me&i-myyjän taloushallinto -opas

    OpenAIRE

    Riipi, Jaana-Mari

    2015-01-01

    Opinnäytetyön toimeksiantajana toimi ruotsalaisen yrityksen Me&i:n Suomen osasto. Me&i myy lasten ja naisten vaatteita kotikutsuilla. Me&i:lla on Suomessa noin 280 toiminimellistä kotikutsumyyjää, jotka toimivat itsenäisinä ammatinharjoittajina ympäri maata. Me&i-myyjien keskuudessa on noussut esiin toive saada Me&i:lta apua ja ohjeistusta kirjanpidollisissa ja verotuksellisissa asioissa. Tämän vuoksi päätettiin tehdä opas, joka kattaa Me&i-myyjän taloushallinnon tärkeimmät osa-alueet. Op...

  15. Surface passivation at low temperature of p- and n-type silicon wafers using a double layer a-Si:H/SiNx:H

    International Nuclear Information System (INIS)

    Focsa, A.; Slaoui, A.; Charifi, H.; Stoquert, J.P.; Roques, S.

    2009-01-01

    Surface passivation of bare silicon or emitter region is of great importance towards high efficiency solar cells. Nowadays, this is usually accomplished by depositing an hydrogenated amorphous silicon nitride (a-SiNx:H) layer on n + p structures that serves also as an excellent antireflection layer. On the other hand, surface passivation of p-type silicon is better assured by an hydrogenated amorphous silicon (a-Si:H) layer but suffers from optical properties. In this paper, we reported the surface passivation of p-type and n-type silicon wafers by using an a-Si:H/SiNx:H double layer formed at low temperature (50-400 deg. C) with ECR-PECVD technique. We first investigated the optical properties (refraction index, reflectance, and absorbance) and structural properties by FTIR (bonds Si-H, N-H) of the deposited films. The hydrogen content in the layers was determined by elastic recoil detection analysis (ERDA). The passivation effect was monitored by measuring the minority carrier effective lifetime vs. different parameters such as deposition temperature and amorphous silicon layer thickness. We have found that a 10-15 nm a-Si film with an 86 nm thick SiN layer provides an optimum of the minority carriers' lifetime. It increases from an initial value of about 50-70 μs for a-Si:H to about 760 and 800 μs for a-Si:H/SiNx:H on Cz-pSi and FZ-nSi, respectively, at an injection level 2 x 10 15 cm -3 . The effective surface recombination velocity, S eff , for passivated double layer on n-type FZ Si reached 11 cm/s and for FZ-pSi-14 cm/s, and for Cz-pSi-16-20 cm/s. Effect of hydrogen in the passivation process is discussed.

  16. Implementation of the P barANDA Planar-GEM tracking detector in Monte Carlo simulations

    Science.gov (United States)

    Divani Veis, Nazila; Ehret, Andre; Firoozabadi, Mohammad M.; Karabowicz, Radoslaw; Maas, Frank; Saito, Nami; Saito, Takehiko R.; Voss, Bernd; PANDA Gem-Tracker Subgroup

    2018-02-01

    The P barANDA experiment at FAIR will be performed to investigate different aspects of hadron physics using anti-proton beams interacting with a fixed nuclear target. The experimental setup consists of a complex series of detector components covering a large solid angle. A detector with a gaseous active media equipped with gas electron multiplier (GEM) technique will be employed to measure tracks of charged particles at forward direction in order to achieve a high momentum resolution. In this work, a full setup of the GEM tracking detector has been implemented in the P barANDA Monte Carlo simulation package (PandaRoot) based on the current technical and conceptual design, and the expected performance of the P barANDA GEM-tracking detector has been investigated. Furthermore, material-budget studies in terms of the radiation length of the P barANDA GEM-tracking detector have been made in order to investigate the effect of the detector materials and its associated structures to particle measurements.

  17. Solution processable organic/inorganic hybrid ultraviolet photovoltaic detector

    Directory of Open Access Journals (Sweden)

    Xiaopeng Guo

    2016-05-01

    Full Text Available Ultraviolet (UV photodetector is a kind of important optoelectronic device which can be widely used in scientific and engineering fields including astronomical research, environmental monitoring, forest-fire prevention, medical analysis, and missile approach warning etc. The development of UV detector is hindered by the acquirement of stable p-type materials, which makes it difficult to realize large array, low-power consumption UV focal plane array (FPA detector. Here, we provide a novel structure (Al/Poly(9,9-di-n-octylfuorenyl-2,7-diyl(PFO/ZnO/ITO to demonstrate the UV photovoltaic (PV response. A rather smooth surface (RMS roughness: 0.28 nm may be reached by solution process, which sheds light on the development of large-array, light-weight and low-cost UV FPA detectors.

  18. Large area high quality silicon detectors for scientific research and radioactivity monitoring in the environment

    International Nuclear Information System (INIS)

    Frolov, D.; Perevertailo, V.; Frolov, O.; Kononenko, Yu.; Pugatch, V.; Rozenfeld, A.

    1995-01-01

    Full text: Investigation of detector and special test structures made on detector wafers was carried out. Si wafer with a diameter of 76 mm, n-type, specific resistance 2-6 kΩ·cm, made of Si produced at a titanium-magnesium factory in Zaporozh'e (Ukraine) were used. C-V curves were measured on p + -n-junctions of various areas (0.1 cm 2 to 20 cm 2 ) and various configuration. In coordinated C 3 (dC/dV) -1 vs V initial parts of the curves are horizontal lines, that indicates a uniform dopant concentration into the depth of a sample, while starting with some voltage a rise is observed associated with full depletion of the sample. However this rise is more smooth then one described by a simple model. The smooth rise is due to non-uniformity of the depletion depth over the p + -n-junction area caused by non-uniform distribution of dopant concentration over the wafer surface. As a results, full depletion doesn't occur simultaneously in all regions of the junction and is stretched along the voltage scale. A theory is developed to define a distribution of the sample areas over full depletion voltage V fd or over dopant concentration N and, given a fixed voltage, to define the distribution of non-depleted junction ares over a thickness of non-depleted area. Results show possibility of non uniform N and, correspondingly, V fd by up to 2 times with big junction sizes. A high level of non-uniformity was observed not only on Si made in Zaporozh'e, but also on Wacker Si. This method of measurements and analysis may be helpful both in working with detectors and detector Si quality control. Measurements of current and capacitance in a gate-controlled junction (a MOS structure partially overlapped with a p + -n-junction) allowed division of surface into the depth of the crystal. Some peculiarities are observed in current curves compared to previous reports associated with low dopant concentration in our experiments. Local defect areas near the p-n-junction encouraging avalanche

  19. Measuring variation of indoor radon concentration using bare nuclear tracks detectors, scintillation counters and surface barrier detectors

    International Nuclear Information System (INIS)

    Ishak, I.; Mahat, R.H.; Amin, Y.M.

    1996-01-01

    Bare LRI 15 nuclear track detectors , scintillators counter and surface barrier detectors were used to measured the indoor radon concentration in various location within two rooms. Spatial variation of the radon concentration is caused by positioning of the door, windows, furniture, cracks in the building and also distances from floor, wall and ceiling. It is found that the change in temperature are causing radon concentration to increase at certain time of the day

  20. Regional cerebral blood flow in Parkinson's disease measured with N-isopropyl-p-[123I]iodoamphetamine (IMP) SPECT

    International Nuclear Information System (INIS)

    Odano, Ikuo; Nishihara, Mamiko; Hayashi, Hiroko; Higuchi, Shoichi; Sakai, Kunio; Ishikawa, Atsushi; Ibayashi, Katsuhiko.

    1992-01-01

    N-isopropyl-p-[ 123 I]iodoamphetamine (IMP) SPECT studies were performed on 21 patients (13 females; 45-73 yrs) with idiopathic Parkinson's disease (PD) and 10 age-matched normal controls (39-69 yrs). Regional cerebral blood flow (rCBF) was quantitatively measured by the arterial blood sampling method. When compared with normal controls, global CBF, and rCBF in the frontal cortex and in the basal ganglia were reduced 22.1% (p 123 I-IMP SPECT imaging is useful for evaluation and follow-up of patients with PD. (author)

  1. Rise time of voltage pulses in NbN superconducting single photon detectors

    Energy Technology Data Exchange (ETDEWEB)

    Smirnov, K. V. [Moscow State Pedagogical University, 1 Malaya Pirogovskaya St., 119435 Moscow (Russian Federation); CJSC “Superconducting Nanotechnology” (Scontel), 5/22-1 Rossolimo St., 119021 Moscow (Russian Federation); National Research University Higher School of Economics, Moscow Institute of Electronics and Mathematics, 34 Tallinskaya St., 109028 Moscow (Russian Federation); Divochiy, A. V.; Karpova, U. V.; Morozov, P. V. [CJSC “Superconducting Nanotechnology” (Scontel), 5/22-1 Rossolimo St., 119021 Moscow (Russian Federation); Vakhtomin, Yu. B.; Seleznev, V. A. [Moscow State Pedagogical University, 1 Malaya Pirogovskaya St., 119435 Moscow (Russian Federation); CJSC “Superconducting Nanotechnology” (Scontel), 5/22-1 Rossolimo St., 119021 Moscow (Russian Federation); Sidorova, M. V. [Moscow State Pedagogical University, 1 Malaya Pirogovskaya St., 119435 Moscow (Russian Federation); Zotova, A. N.; Vodolazov, D. Yu. [Institute for Physics of Microstructure, Russian Academy of Sciences, GSP-105, 603950 Nizhny Novgorod (Russian Federation); Lobachevsky State University of Nizhny Novgorod, 23 Gagarin Avenue, 603950 Nizhny Novgorod (Russian Federation)

    2016-08-01

    We have found experimentally that the rise time of voltage pulse in NbN superconducting single photon detectors increases nonlinearly with increasing the length of the detector L. The effect is connected with dependence of resistance of the detector R{sub n}, which appears after photon absorption, on its kinetic inductance L{sub k} and, hence, on the length of the detector. This conclusion is confirmed by our calculations in the framework of two temperature model.

  2. Experimental study on the CsI (Tl) crystal anti-compton detector in CDEX

    International Nuclear Information System (INIS)

    Liu Shukui; Yue Qian; Tang Changjian

    2012-01-01

    CDEX (China Dark matter Experiment) Collaboration will carry out direct search for dark matter with Ultra-Low Energy Threshold High Purity germanium (ULE-HPGe) detector at CJPL (China Jinping deep underground Laboratory). Before underground research, some experiments of the CsI (Tl) crystal Anti-Compton detector have been done on the ground, including light guide choice, wrapping material choice, height uniformity of CsI (Tl) crystal, side uniformity of CsI (Tl) crystal and the test results of all the crystals. Through the preliminary work on the ground, we have got some knowledge of the anti-compton detector and prepared for the underground experiment. (authors)

  3. InGaN/GaN LEDs optical output efficiency enhancement based on AFM surface morphology studies of the constituent layers

    Energy Technology Data Exchange (ETDEWEB)

    Florescu, D.I.; Ramer, J.C.; Merai, V.N.; Parekh, A.; Lu, D.; Lee, D.S.; Armour, E.A. [Veeco TurboDisc Operations, 394 Elizabeth Avenue, Somerset, NJ 08873 (United States)

    2005-05-01

    For GaN-based light emitting diodes (LEDs), the growth mechanism and interface roughness of the n-contact, active region, and p-contact layers are of vital importance for achieving superior optical and electrical characteristics of such devices. Nanoscale range surface morphology is one of the key parameters actively employed to developing high optical efficiency applications. In this study, we illustrate the use of atomic force microscopy to investigate and optimise the surface morphology of (a) sapphire substrates and (b) metalorganic chemical vapour deposition (MOCVD) grown InGaN/GaN LED constituent layers (i.e., n-GaN, InGaN active region, and p-GaN). Several optimal cases are presented and discussed, where based on the surface morphology findings an improved selection of (a) substrates and (b) MOCVD growth parameters was achieved leading to an overall enhancement (over 2 times) of the optical output efficiency of these devices. Applying the principles and observations reported, a thermally robust 465 nm multiple quantum well LED with an unpackaged chip-level power output in the 4.0-5.0 mW range and forward voltage <3.2 V at 20 mA was consistently achieved. (copyright 2005 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  4. Narrow pH Range of Surface Water Bodies Receiving Pesticide Input in Europe.

    Science.gov (United States)

    Bundschuh, Mirco; Weyers, Arnd; Ebeling, Markus; Elsaesser, David; Schulz, Ralf

    2016-01-01

    Fate and toxicity of the active ingredients (AI's) of plant protection products in surface waters is often influenced by pH. Although a general range of pH values is reported in literature, an evaluation targeting aquatic ecosystems with documented AI inputs is lacking at the larger scale. Results show 95% of European surface waters (n = 3075) with a documented history of AI exposure fall within a rather narrow pH range, between 7.0 and 8.5. Spatial and temporal variability in the data may at least be partly explained by the calcareous characteristics of parental rock material, the affiliation of the sampling site to a freshwater ecoregion, and the photosynthetic activity of macrophytes (i.e., higher pH values with photosynthesis). Nonetheless, the documented pH range fits well with the standard pH of most ecotoxicological test guidelines, confirming the fate and ecotoxicity of AIs are usually adequately addressed.

  5. Design and fabrication of a novel self-powered solid-state neutron detector

    Science.gov (United States)

    LiCausi, Nicholas

    There is a strong interest in intercepting special nuclear materials (SNM) at national and international borders and ports for homeland security applications. Detection of SNM such as U and Pu is often accomplished by sensing their natural or induced neutron emission. Such detector systems typically use thermal neutron detectors inside a plastic moderator. In order to achieve high detection efficiency gas filled detectors are often used; these detectors require high voltage bias for operation, which complicates the system when tens or hundreds of detectors are deployed. A better type of detector would be an inexpensive solid-state detector that can be mass-produced like any other computer chip. Research surrounding solid-state detectors has been underway since the late 1990's. A simple solid-state detector employs a planar solar-cell type p-n junction and a thin conversion material that converts incident thermal neutrons into detectable alpha-particles and 7Li ions. Existing work has typically used 6LiF or 10B as this conversion layer. Although a simple planar detector can act as a highly portable, low cost detector, it is limited to relatively low detection efficiency (˜10%). To increase the efficiency, 3D perforated p-i-n silicon devices were proposed. To get high efficiency, these detectors need to be biased, resulting in increased leakage current and hence detector noise. In this research, a new type of detector structure was proposed, designed and fabricated. Among several detector structures evaluated, a honeycomb-like silicon p-n structure was selected, which is filled with natural boron as the neutron converter. A silicon p+-n diode formed on the thin silicon wall of the honeycomb structure detects the energetic alpha-particles emitted from the boron conversion layer. The silicon detection layer is fabricated to be fully depleted with an integral step during the boron filling process. This novel feature results in a simplified fabrication process. Three

  6. A variable temperature cryostat that produces in situ clean-up germanium detector surfaces

    International Nuclear Information System (INIS)

    Pehl, R.H.; Madden, N.W.; Malone, D.F.; Cork, C.P.; Landis, D.A.; Xing, J.S.; Friesel, D.L.

    1988-11-01

    Variable temperature cryostats that can maintain germanium detectors at temperatures from 82 K to about 400 K while the thermal shield surrounding the detectors remains much colder when the detectors are warmed have been developed. Cryostats such as these offer the possibility of cryopumping material from the surface of detectors to the colder thermal shield. The diode characteristics of several detectors have shown very significant improvement following thermal cycles up to about 150 K in these cryostats. Important applications for cryostats having this attribute are many. 4 figs

  7. Vertically etched silicon nano-rods as a sensitive electron detector

    International Nuclear Information System (INIS)

    Hajmirzaheydarali, M; Akbari, M; Soleimani-Amiri, S; Sadeghipari, M; Shahsafi, A; Akhavan Farahani, A; Mohajerzadeh, S

    2015-01-01

    We have used vertically etched silicon nano-rods to realize electron detectors suitable for scanning electron microscopes. The results of deep etching of silicon nano-structures are presented to achieve highly ordered arrays of nano-rods. The response of the electron detector to energy of the primary electron beam and the effects of various sizes and materials has been investigated, indicating its high sensitivity to secondary and back-scattered electrons. The miniaturized structure of this electron detector allows it to be placed in the vicinity of the specimen to improve the resolution and contrast. This detector collects electrons and converts the electron current to voltage directly by means of n-doped silicon nano-rods on a p-type silicon substrate. Silicon nano-rods enhance the surface-to-volume ratio of the detector as well as improving the yield of electron detection. The use of nano-structures and silicon nanowires as an electron detector has led to higher sensitivities than with micro-structures. (paper)

  8. AlGaN/GaN Metal-Oxide-Semiconductor High-Electron-Mobility Transistor with Polarized P(VDF-TrFE) Ferroelectric Polymer Gating

    Science.gov (United States)

    Liu, Xinke; Lu, Youming; Yu, Wenjie; Wu, Jing; He, Jiazhu; Tang, Dan; Liu, Zhihong; Somasuntharam, Pannirselvam; Zhu, Deliang; Liu, Wenjun; Cao, Peijiang; Han, Sun; Chen, Shaojun; Seow Tan, Leng

    2015-01-01

    Effect of a polarized P(VDF-TrFE) ferroelectric polymer gating on AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistors (MOS-HEMTs) was investigated. The P(VDF-TrFE) gating in the source/drain access regions of AlGaN/GaN MOS-HEMTs was positively polarized (i.e., partially positively charged hydrogen were aligned to the AlGaN surface) by an applied electric field, resulting in a shift-down of the conduction band at the AlGaN/GaN interface. This increases the 2-dimensional electron gas (2-DEG) density in the source/drain access region of the AlGaN/GaN heterostructure, and thereby reduces the source/drain series resistance. Detailed material characterization of the P(VDF-TrFE) ferroelectric film was also carried out using the atomic force microscopy (AFM), X-ray Diffraction (XRD), and ferroelectric hysteresis loop measurement. PMID:26364872

  9. A new CVD diamond mosaic-detector for (n, α) cross-section measurements at the n{sub T}OF experiment at CERN

    Energy Technology Data Exchange (ETDEWEB)

    Weiß, C., E-mail: christina.weiss@cern.ch [Atominstitut, Technische Universität Wien (Austria); European Organization for Nuclear Research (CERN), Geneva (Switzerland); Griesmayer, E. [Atominstitut, Technische Universität Wien (Austria); Guerrero, C. [European Organization for Nuclear Research (CERN), Geneva (Switzerland); Altstadt, S. [Johann-Wolfgang-Goethe Universität, Frankfurt (Germany); Andrzejewski, J. [Uniwersytet Łódzki, Lodz (Poland); Audouin, L. [Centre National de la Recherche Scientifique/IN2P3 - IPN, Orsay (France); Badurek, G. [Atominstitut, Technische Universität Wien (Austria); Barbagallo, M. [Istituto Nazionale di Fisica Nucleare, Bari (Italy); Bécares, V. [Centro de Investigaciones Energeticas Medioambientales y Tecnológicas (CIEMAT), Madrid (Spain); Bečvář, F. [Charles University, Prague (Czech Republic); Belloni, F. [Commissariat à l’Énergie Atomique (CEA) Saclay - Irfu, Gif-sur-Yvette (France); Berthoumieux, E. [Commissariat à l’Énergie Atomique (CEA) Saclay - Irfu, Gif-sur-Yvette (France); European Organization for Nuclear Research (CERN), Geneva (Switzerland); Billowes, J. [University of Manchester, Oxford Road, Manchester (United Kingdom); Boccone, V. [European Organization for Nuclear Research (CERN), Geneva (Switzerland); Bosnar, D. [Department of Physics, Faculty of Science, University of Zagreb (Croatia); Brugger, M.; Calviani, M. [European Organization for Nuclear Research (CERN), Geneva (Switzerland); Calviño, F. [Universitat Politecnica de Catalunya, Barcelona (Spain); and others

    2013-12-21

    At the n{sub T}OF experiment at CERN a dedicated single-crystal chemical vapor deposition (sCVD) Diamond Mosaic-Detector has been developed for (n,α) cross-section measurements. The detector, characterized by an excellent time and energy resolution, consists of an array of 9 sCVD diamond diodes. The detector has been characterized and a cross-section measurement has been performed for the {sup 59}Ni(n,α){sup 56}Fe reaction in 2012. The characteristics of the detector, its performance and the promising preliminary results of the experiment are presented. -- Highlights: •A large-area detector of 3 ×3 sCVD diamonds was built for (n, α) measurements. •The {sup 59}Ni(n, α){sup 56}Fe cross-section was measured successfully at n{sub T}OF/CERN. •The energy resolution of the detector meets the expectations from simulations. •The reaction products during the measurement at n{sub T}OF could clearly be separated. •The detector is suitable for (n, α) measurements in a heterogeneous beam.

  10. Gate less-FET pH Sensor Fabricated on Undoped AlGaN/ GaN HEMT Structure

    International Nuclear Information System (INIS)

    Maneea Eizadi Sharifabad; Mastura Shafinaz Zainal Abidin; Shaharin Fadzli Abd Rahman; Abdul Manaf Hashim; Abdul Rahim Abdul Rahman

    2011-01-01

    Gallium nitride with wurtzite crystal structure is a chemically stable semiconductor with high internal spontaneous and piezoelectric polarization, which make it highly suitable materials to create very sensitive and robust sensors for the detection of ions, gases and liquids. Sensing characteristics of an open-gate liquid-phase sensor fabricated on undoped-AlGaN/ GaN high-electron-mobility-transistor (HEMT) structure in aqueous solution was investigated. In ambient atmosphere, the open-gate undoped AlGaN/ GaN HEMT clearly showed only the presence of linear region of currents while Si-doped AlGaN/ GaN showed the linear and saturation regions of currents, very similar to those of gated devices. This seems to show that very low Fermi level pinning by surface states exists in undoped AlGaN/ GaN sample. In aqueous solution, the typical current-voltage (I-V) characteristics of HEMTs with good gate controllability were observed. The potential of the AlGaN surface at the open-gate area is effectively controlled via aqueous solution by Ag/ AgCl reference gate electrode. The open-gate undoped AlGaN/ GaN HEMT structure is capable of stable operation in aqueous electrolytes and exhibit linear sensitivity, and high sensitivity of 1.9 mA/ pH or 3.88 mA/ mm/ pH at drain-source voltage, VDS = 5 V was obtained. Due to large leakage current where it increases with the negative reference gate voltage, the Nernstians like sensitivity cannot be determined. Suppression of current leakage is likely to improve the device performance. The open-gate undoped-AlGaN/ GaN structure is expected to be suitable for pH sensing application. (author)

  11. Initial results from 3D-DDTC detectors on p-type substrates

    Energy Technology Data Exchange (ETDEWEB)

    Zoboli, A., E-mail: zoboli@disi.unitn.i [Dipartimento di Ingegneria e Scienza dell' Informazione, Universita di Trento, and INFN, Sezione di Padova (Gruppo Collegato di Trento), Via Sommarive, 14, I-38100 Povo di Trento (Italy); Boscardin, M. [Fondazione Bruno Kessler, Centro per i Materiali e i Microsistemi, Via Sommarive, 18, I-38100 Povo di Trento (Italy); Bosisio, L. [Dipartimento di Fisica, Universita di Trieste, and INFN, Sezione di Trieste, Via A. Valerio, 2, I-34127 Trieste (Italy); Dalla Betta, G.-F. [Dipartimento di Ingegneria e Scienza dell' Informazione, Universita di Trento, and INFN, Sezione di Padova (Gruppo Collegato di Trento), Via Sommarive, 14, I-38100 Povo di Trento (Italy); Piemonte, C.; Ronchin, S.; Zorzi, N. [Fondazione Bruno Kessler, Centro per i Materiali e i Microsistemi, Via Sommarive, 18, I-38100 Povo di Trento (Italy)

    2010-01-11

    Owing to their superior radiation hardness compared to planar detectors, 3D detectors are one of the most promising technologies for the LHC upgrade foreseen in 2017. Fondazione Bruno Kessler has developed 3D Double-side Double-Type Column (3D-DDTC) detectors providing a technological simplifications with respect to a standard 3D process while aiming at comparable detector performance. We present selected results from the electrical characterization of 3D-DDTC structures from the second batch made on p-type substrates, supported also by TCAD simulations.

  12. A new NaI(Tl) four-detector layout for field contamination assessment using artificial neural networks and the Monte Carlo method for system calibration

    International Nuclear Information System (INIS)

    Moreira, M.C.F.; Conti, C.C.; Schirru, R.

    2010-01-01

    An NaI(Tl) multidetector layout combined with the use of Monte Carlo (MC) calculations and artificial neural networks(ANN) is proposed to assess the radioactive contamination of urban and semi-urban environment surfaces. A very simple urban environment like a model street composed of a wall on either side and the ground surface was the study case. A layout of four NaI(Tl) detectors was used, and the data corresponding to the response of the detectors were obtained by the Monte Carlo method. Two additional data sets with random values for the contamination and for detectors' response were also produced to test the ANNs. For this work, 18 feedforward topologies with backpropagation learning algorithm ANNs were chosen and trained. The results showed that some trained ANNs were able to accurately predict the contamination on the three urban surfaces when submitted to values within the training range. Other results showed that generalization outside the training range of values could not be achieved. The use of Monte Carlo calculations in combination with ANNs has been proven to be a powerful tool to perform detection calibration for highly complicated detection geometries.

  13. A new NaI(Tl) four-detector layout for field contamination assessment using artificial neural networks and the Monte Carlo method for system calibration

    Energy Technology Data Exchange (ETDEWEB)

    Moreira, M.C.F., E-mail: marcos@ird.gov.b [Universidade Federal do Rio de Janeiro, COPPE, Programa de Engenharia Nuclear, Laboratorio de Monitoracao de Processos (Federal University of Rio de Janeiro, COPPE, Nuclear Engineering Program, Process Monitoring Laboratory), P.O. Box 68509, 21941-972 Rio de Janeiro (Brazil); Instituto de Radioprotecao e Dosimetria, CNEN/IRD (Radiation Protection and Dosimetry Institute, CNEN/IRD), Av. Salvador Allende s/no, P.O. Box 37750, 22780-160 Rio de Janeiro (Brazil); Conti, C.C. [Instituto de Radioprotecao e Dosimetria, CNEN/IRD (Radiation Protection and Dosimetry Institute, CNEN/IRD), Av. Salvador Allende s/no, P.O. Box 37750, 22780-160 Rio de Janeiro (Brazil); Schirru, R. [Universidade Federal do Rio de Janeiro, COPPE, Programa de Engenharia Nuclear, Laboratorio de Monitoracao de Processos (Federal University of Rio de Janeiro, COPPE, Nuclear Engineering Program, Process Monitoring Laboratory), P.O. Box 68509, 21941-972 Rio de Janeiro (Brazil)

    2010-09-21

    An NaI(Tl) multidetector layout combined with the use of Monte Carlo (MC) calculations and artificial neural networks(ANN) is proposed to assess the radioactive contamination of urban and semi-urban environment surfaces. A very simple urban environment like a model street composed of a wall on either side and the ground surface was the study case. A layout of four NaI(Tl) detectors was used, and the data corresponding to the response of the detectors were obtained by the Monte Carlo method. Two additional data sets with random values for the contamination and for detectors' response were also produced to test the ANNs. For this work, 18 feedforward topologies with backpropagation learning algorithm ANNs were chosen and trained. The results showed that some trained ANNs were able to accurately predict the contamination on the three urban surfaces when submitted to values within the training range. Other results showed that generalization outside the training range of values could not be achieved. The use of Monte Carlo calculations in combination with ANNs has been proven to be a powerful tool to perform detection calibration for highly complicated detection geometries.

  14. CsI(Tl)-photodiode detectors for gamma-ray spectroscopy

    CERN Document Server

    Fioretto, E; Viesti, G; Cinausero, M; Zuin, L; Fabris, D; Lunardon, M; Nebbia, G; Prete, G

    2000-01-01

    We report on the performances of CsI(Tl)-photodiode detectors for gamma-ray spectroscopy applications. Light output yield and energy resolution have been measured for different crystals and read-out configurations.

  15. Lead Halide Perovskite Photovoltaic as a Model p-i-n Diode.

    Science.gov (United States)

    Miyano, Kenjiro; Tripathi, Neeti; Yanagida, Masatoshi; Shirai, Yasuhiro

    2016-02-16

    The lead halide perovskite photovoltaic cells, especially the iodide compound CH3NH3PbI3 family, exhibited enormous progress in the energy conversion efficiency in the past few years. Although the first attempt to use the perovskite was as a sensitizer in a dye-sensitized solar cell, it has been recognized at the early stage of the development that the working of the perovskite photovoltaics is akin to that of the inorganic thin film solar cells. In fact, theoretically perovskite is always treated as an ordinary direct band gap semiconductor and hence the perovskite photovoltaics as a p-i-n diode. Despite this recognition, research effort along this line of thought is still in pieces and incomplete. Different measurements have been applied to different types of devices (different not only in the materials but also in the cell structures), making it difficult to have a coherent picture. To make the situation worse, the perovskite photovoltaics have been plagued by the irreproducible optoelectronic properties, most notably the sweep direction dependent current-voltage relationship, the hysteresis problem. Under such circumstances, it is naturally very difficult to analyze the data. Therefore, we set out to make hysteresis-free samples and apply time-tested models and numerical tools developed in the field of inorganic semiconductors. A series of electrical measurements have been performed on one type of CH3NH3PbI3 photovoltaic cells, in which a special attention was paid to ensure that their electronic reproducibility was better than the fitting error in the numerical analysis. The data can be quantitatively explained in terms of the established models of inorganic semiconductors: current/voltage relationship can be very well described by a two-diode model, while impedance spectroscopy revealed the presence of a thick intrinsic layer with the help of a numerical solver, SCAPS, developed for thin film solar cell analysis. These results point to that CH3NH3PbI3 is an

  16. Fabrication of p-CuO/n-ZnO heterojunction diode via sol-gel spin coating technique

    Energy Technology Data Exchange (ETDEWEB)

    Prabhu, Rajeev R., E-mail: rajeevrprabhu@gmail.com [Nanophotonic and Optoelectronic Devices Laboratory, Department of Physics, Cochin University of Science and Technology, Kochi 682 022 (India); Saritha, A.C.; Shijeesh, M.R. [Nanophotonic and Optoelectronic Devices Laboratory, Department of Physics, Cochin University of Science and Technology, Kochi 682 022 (India); Jayaraj, M.K. [Nanophotonic and Optoelectronic Devices Laboratory, Department of Physics, Cochin University of Science and Technology, Kochi 682 022 (India); Centre for Advanced Materials, Cochin University of Science and Technology, Kochi 682 022 (India)

    2017-06-15

    Highlights: • Facile all-solution growth of nanostructured p-CuO and n-ZnO TSO films is reported. • Annealing the films in air affects the structural, electrical and optical properties. • p-n heterojunction using these films was fabricated in ITO/n-ZnO/p-CuO/Au structure. • Transparent heterojunction diode performed well with a V{sub on} of 2.5 V and n of 3.15. • Fabricated p-CuO/n-ZnO heterojunction diode can be used for UV detector application. - Abstract: We report a facile all-solution approach for the growth of nanostructured p-CuO and n-ZnO thin films. The influence of annealing temperature on the physical properties of CuO and ZnO thin films was examined. XRD and Raman spectra depict the structural and phase purity of solution grown CuO and ZnO films. The electrical as well as the optical properties of thin films were also studied. The average optical transmission of CuO and ZnO thin films in the visible spectral region was found to be above 80 and 95% respectively. Band gap energy variations on annealing temperature were investigated for CuO as well as ZnO films. Surface morphology analyzed by FESEM shows that the films are very smooth. All solution grown p-n heterojunction using p-CuO and n-ZnO films was fabricated in the structure ITO/n-ZnO/p-CuO/Au which showed rectification behavior with a turn on voltage of 2.5 V and an ideality factor of 3.15.

  17. Physics of multiple muons in underground detectors

    International Nuclear Information System (INIS)

    Gaisser, T.K.; Stanev, T.

    1982-01-01

    We summarize results of Monte Carlo simulations of underground muons with a set of parametrizations for number and lateral distribution of muons at various detector depths. We also describe the size distributions of accompanying showers at the surface. We give some illustrations of the use of these results to study the surface-underground correlation and to interpret preliminary results of the Soudan-I detector presented at this conference

  18. Enhanced power conversion efficiency of p-i-n type organic solar cells by employing a p-layer of palladium phthalocyanine

    KAUST Repository

    Kim, Inho

    2010-11-15

    We demonstrate an enhancement in the power conversion efficiency (PCE) of p-i-n type organic solar cells consisting of zinc phthalocyanine (ZnPc) and fullerene (C60) using a p-layer of palladium phthalocyanine (PdPc). Solar cells employing three different device structures such as ZnPc/ZnPc:C60/C60, PdPc/PdPc:C60/C60, and PdPc/ZnPc:C60/C60 with varying thickness of mixed interlayers were fabricated by thermal evaporation. The mixed i-layers were deposited by co-evaporation of MPc (M=Zn,Pd) and C60 by 1:1 ratio. PCE of 3.7% was obtained for optimized cells consisting of PdPc/ZnPc:C60/C60, while cells with device structure of ZnPc/ZnPc:C60/C60 showed PCE of 3.2%.

  19. Semiconductor detector physics

    International Nuclear Information System (INIS)

    Equer, B.

    1987-01-01

    Comprehension of semiconductor detectors follows comprehension of some elements of solid state physics. They are recalled here, limited to the necessary physical principles, that is to say the conductivity. P-n and MIS junctions are discussed in view of their use in detection. Material and structure (MOS, p-n, multilayer, ..) are also reviewed [fr

  20. The iQID camera: An ionizing-radiation quantum imaging detector

    Energy Technology Data Exchange (ETDEWEB)

    Miller, Brian W., E-mail: brian.miller@pnnl.gov [Pacific Northwest National Laboratory, Richland, WA 99352 (United States); College of Optical Sciences, The University of Arizona, Tucson, AZ 85719 (United States); Gregory, Stephanie J.; Fuller, Erin S. [Pacific Northwest National Laboratory, Richland, WA 99352 (United States); Barrett, Harrison H.; Bradford Barber, H.; Furenlid, Lars R. [Center for Gamma-Ray Imaging, The University of Arizona, Tucson, AZ 85719 (United States); College of Optical Sciences, The University of Arizona, Tucson, AZ 85719 (United States)

    2014-12-11

    We have developed and tested a novel, ionizing-radiation Quantum Imaging Detector (iQID). This scintillation-based detector was originally developed as a high-resolution gamma-ray imager, called BazookaSPECT, for use in single-photon emission computed tomography (SPECT). Recently, we have investigated the detector's response and imaging potential with other forms of ionizing radiation including alpha, neutron, beta, and fission fragment particles. The confirmed response to this broad range of ionizing radiation has prompted its new title. The principle operation of the iQID camera involves coupling a scintillator to an image intensifier. The scintillation light generated by particle interactions is optically amplified by the intensifier and then re-imaged onto a CCD/CMOS camera sensor. The intensifier provides sufficient optical gain that practically any CCD/CMOS camera can be used to image ionizing radiation. The spatial location and energy of individual particles are estimated on an event-by-event basis in real time using image analysis algorithms on high-performance graphics processing hardware. Distinguishing features of the iQID camera include portability, large active areas, excellent detection efficiency for charged particles, and high spatial resolution (tens of microns). Although modest, iQID has energy resolution that is sufficient to discriminate between particles. Additionally, spatial features of individual events can be used for particle discrimination. An important iQID imaging application that has recently been developed is real-time, single-particle digital autoradiography. We present the latest results and discuss potential applications.

  1. Grøn Open Access i Praksis

    DEFF Research Database (Denmark)

    Open Access indikatoren påviste et uudnyttet potentiale på ca 60%, men hvorfor er der så ikke mere Open Access indhold?. I det konkrete arbejde med forskningsregistrering og registrering af post-prints støder bibliotekerne på en række udfordringer, som vanskeliggør institutionernes muligheder...... for at nå de nationale Open Access mål. Det er for eksempel inden for områderne rettigheder og licenser, tilladte Open Access versioner, embargoperioder m.m., at vi støder på problemer. Det er disse meget konkrete udfordringer, der arbejdes med i det kommende DEFF projekt ”Grøn Open Access i praksis”....

  2. Limits on uranium and thorium bulk content in GERDA Phase I detectors

    Science.gov (United States)

    GERDA Collaboration; Agostini, M.; Allardt, M.; Bakalyarov, A. M.; Balata, M.; Barabanov, I.; Baudis, L.; Bauer, C.; Becerici-Schmidt, N.; Bellotti, E.; Belogurov, S.; Belyaev, S. T.; Benato, G.; Bettini, A.; Bezrukov, L.; Bode, T.; Borowicz, D.; Brudanin, V.; Brugnera, R.; Caldwell, A.; Cattadori, C.; Chernogorov, A.; D'Andrea, V.; Demidova, E. V.; di Vacri, A.; Domula, A.; Doroshkevich, E.; Egorov, V.; Falkenstein, R.; Fedorova, O.; Freund, K.; Frodyma, N.; Gangapshev, A.; Garfagnini, A.; Grabmayr, P.; Gurentsov, V.; Gusev, K.; Hakemüller, J.; Hegai, A.; Heisel, M.; Hemmer, S.; Hofmann, W.; Hult, M.; Inzhechik, L. V.; Janicskó Csáthy, J.; Jochum, J.; Junker, M.; Kazalov, V.; Kihm, T.; Kirpichnikov, I. V.; Kirsch, A.; Kish, A.; Klimenko, A.; Kneißl, R.; Knöpfle, K. T.; Kochetov, O.; Kornoukhov, V. N.; Kuzminov, V. V.; Laubenstein, M.; Lazzaro, A.; Lebedev, V. I.; Lehnert, B.; Liao, H. Y.; Lindner, M.; Lippi, I.; Lubashevskiy, A.; Lubsandorzhiev, B.; Lutter, G.; Macolino, C.; Majorovits, B.; Maneschg, W.; Medinaceli, E.; Mingazheva, R.; Misiaszek, M.; Moseev, P.; Nemchenok, I.; Palioselitis, D.; Panas, K.; Pandola, L.; Pelczar, K.; Pullia, A.; Riboldi, S.; Rumyantseva, N.; Sada, C.; Salamida, F.; Salathe, M.; Schmitt, C.; Schneider, B.; Schönert, S.; Schreiner, J.; Schütz, A.-K.; Schulz, O.; Schwingenheuer, B.; Selivanenko, O.; Shevchik, E.; Shirchenko, M.; Simgen, H.; Smolnikov, A.; Stanco, L.; Stepaniuk, M.; Vanhoefer, L.; Vasenko, A. A.; Veresnikova, A.; von Sturm, K.; Wagner, V.; Walter, M.; Wegmann, A.; Wester, T.; Wiesinger, C.; Wojcik, M.; Yanovich, E.; Zhitnikov, I.; Zhukov, S. V.; Zinatulina, D.; Zuber, K.; Zuzel, G.

    2017-05-01

    Internal contaminations of 238U, 235U and 232Th in the bulk of high purity germanium detectors are potential backgrounds for experiments searching for neutrinoless double beta decay of 76Ge. The data from GERDA Phase I have been analyzed for alpha events from the decay chain of these contaminations by looking for full decay chains and for time correlations between successive decays in the same detector. No candidate events for a full chain have been found. Upper limits on the activities in the range of a few nBq/kg for 226Ra, 227Ac and 228Th, the long-lived daughter nuclides of 238U, 235U and 232Th, respectively, have been derived. With these upper limits a background index in the energy region of interest from 226Ra and 228Th contamination is estimated which satisfies the prerequisites of a future ton scale germanium double beta decay experiment.

  3. Bidirectional electroluminescence from p-SnO2/i-MgZnO/n-ZnO heterojunction light-emitting diodes

    International Nuclear Information System (INIS)

    Yang, Yanqin; Li, Songzhan; Liu, Feng; Zhang, Nangang; Liu, Kan; Wang, Shengxiang; Fang, Guojia

    2017-01-01

    Light-emitting diodes based on p-SnO 2 /i-MgZnO/n-ZnO heterojunction have been fabricated. The material properties and the performance of heterojunction device are characterized. Current-voltage characteristics of the device show a diode-like rectifying behavior. Under forward bias, two prominent emission peaks located at 589 nm and 722 nm in the visible region and a weak ultraviolet emission are observed from p-SnO 2 /i-MgZnO/n-ZnO heterojunction device. As the device is under reverse bias, a broad visible emission band dominates the electroluminescence spectrum at a high current. Furthermore, the emission mechanism has been discussed in terms of energy band structures of the device under forward and reverse biases.

  4. The development of p-type silicon detectors for the high radiation regions of the LHC

    International Nuclear Information System (INIS)

    Hanlon, M.D.L.

    1998-04-01

    This thesis describes the production and characterisation of silicon microstrip detectors and test structures on p-type substrates. An account is given of the production and full parameterisation of a p-type microstrip detector, incorporating the ATLAS-A geometry in a beam test. This detector is an AC coupled device incorporating a continuous p-stop isolation frame and polysilicon biasing and is typical of n-strip devices proposed for operation at the LHC. It was successfully read out using the FELix-128 analogue pipeline chip and a signal to noise (s/n) of 17±1 is reported, along with a spatial resolution of 14.6±0.2 μm. Diode test structures were fabricated on both high resistivity float zone material and on epitaxial material and subsequently irradiated with 24 GeV protons at the CERN PS up to a dose of (8.22±0.23) x 10 14 per cm 2 . An account of the measurement program is presented along with results on the changes in the effective doping concentration (N eff ) with irradiation and the changes in bulk current. Changes in the effective doping concentration and leakage current for high resistivity p-type material under irradiation were found to be similar to to that of n-type material. Values of α=(3.30±0.08) x 10 -17 A cm -1 for the leakage current parameter and g c =(1.20±0.05)x10 -2 cm -1 for the effective dopant introduction rate were found for this material. The epitaxial material did not perform better than the float zone material for the range of doses studied. Surprising results were obtained for highly irradiated p-type diodes illuminated on the ohmic side with an α-source, in that signals were observed well below the full depletion voltage. The processing that had been used to fabricate the test structures and the initial prototype that was studied in the test beam was based on the process used to fabricate devices on n-type material. Presented in this thesis are the modifications that were made to the process, which centred on the oxidation

  5. Electrical characterization of thin edgeless N-on-p planar pixel sensors for ATLAS upgrades

    International Nuclear Information System (INIS)

    Bomben, M; Calderini, G; Chauveau, J; Marchiori, G; Bagolini, A; Boscardin, M; Giacomini, G; Zorzi, N; Bosisio, L; Rosa, A La

    2014-01-01

    In view of the LHC upgrade phases towards the High Luminosity LHC (HL-LHC), the ATLAS experiment plans to upgrade the Inner Detector with an all-silicon system. Because of its radiation hardness and cost effectiveness, the n-on-p silicon technology is a promising candidate for a large area pixel detector. The paper reports on the joint development, by LPNHE and FBK of novel n-on-p edgeless planar pixel sensors, making use of the active trench concept for the reduction of the dead area at the periphery of the device. After discussing the sensor technology, and presenting some sensors' simulation results, a complete overview of the electrical characterization of the produced devices will be given

  6. Relative quantum yield of I-asterisk(2P1/2) in the tunable laser UV photodissociation of i-C3F7I and n-C3F7I - Effect of temperature and exciplex emission

    Science.gov (United States)

    Smedley, J. E.; Leone, S. R.

    1983-01-01

    Wavelength-specific relative quantum yields of metastable I from pulsed laser photodissociation of i-C3F7I and n-C3F7I in the range 265-336 nm are determined by measuring the time-resolved infrared emission from the atomic I(P-2(1/2) P-2(3/2) transition. It is shown that although this yield appears to be unity from 265 to 298 nm, it decreases dramatically at longer wavelengths. Values are also reported for the enhancement of emission from metastable I due to exciplex formation at several temperatures. The exciplex formation emission increases linearly with parent gas pressure, but decreases with increasing temperature. Absorption spectra of i- and n-C3F7I between 303 and 497 K are presented, and the effect of temperature on the quantum yields at selected wavelengths greater than 300 nm, where increasing the temperature enhances the absorption considerably, are given. The results are discussed in regard to the development of solar-pumped iodine lasers.

  7. CHICSi - a compact ultra-high vacuum compatible detector system for nuclear reaction experiments at storage rings. II. Detectors

    Energy Technology Data Exchange (ETDEWEB)

    Golubev, P.; Avdeichikov, V.; Carlen, L.; Jakobsson, B. E-mail: bo.jakobsson@kosufy.lu.se; Siwek, A.; Veldhuizen, E.J. van; Westerberg, L.; Whitlow, H.J

    2003-03-11

    We describe the detectors for identification of charged particles and fragments in CHICSi, a large solid angle multi-telescope system mounted inside an ultra-high vacuum (UHV), cluster-jet target chamber. CHICSi performs nuclear reaction experiments at storage rings. The telescopes consist of a first very thin, 10-14 {mu}m Si detector, a second 300 {mu}m (or possibly 500 {mu}m) ion implanted Si detector supplemented by a 6 mm GSO(Ce) scintillator read out by a photodiode (PD) or by a third 300 {mu}m Si detector. The telescopes provide full charge separation up to Z=17 and mass resolution up to A=9 in the energy range 0.7-60A MeV. The thin p-i-n diode detector, etched out from a 280 {mu}m Si wafer, and the GSO/PD detector, both exclusively developed for CHICSi, provide an energy resolution {<=}8%, while the standard 300 {mu}m detectors have {<=}2% energy resolution. Radiation stability of the Si detectors is confirmed up to an integrated flux of 10{sup 10} alpha particles. The GSO detector has 70% light collection efficiency with the optical coupling to the PD a simple open, 0.2 mm, gap. A new method, developed to perform absolute energy calibration for the GSO/PD detector is presented.

  8. CHICSi - a compact ultra-high vacuum compatible detector system for nuclear reaction experiments at storage rings. II. Detectors

    International Nuclear Information System (INIS)

    Golubev, P.; Avdeichikov, V.; Carlen, L.; Jakobsson, B.; Siwek, A.; Veldhuizen, E.J. van; Westerberg, L.; Whitlow, H.J.

    2003-01-01

    We describe the detectors for identification of charged particles and fragments in CHICSi, a large solid angle multi-telescope system mounted inside an ultra-high vacuum (UHV), cluster-jet target chamber. CHICSi performs nuclear reaction experiments at storage rings. The telescopes consist of a first very thin, 10-14 μm Si detector, a second 300 μm (or possibly 500 μm) ion implanted Si detector supplemented by a 6 mm GSO(Ce) scintillator read out by a photodiode (PD) or by a third 300 μm Si detector. The telescopes provide full charge separation up to Z=17 and mass resolution up to A=9 in the energy range 0.7-60A MeV. The thin p-i-n diode detector, etched out from a 280 μm Si wafer, and the GSO/PD detector, both exclusively developed for CHICSi, provide an energy resolution ≤8%, while the standard 300 μm detectors have ≤2% energy resolution. Radiation stability of the Si detectors is confirmed up to an integrated flux of 10 10 alpha particles. The GSO detector has 70% light collection efficiency with the optical coupling to the PD a simple open, 0.2 mm, gap. A new method, developed to perform absolute energy calibration for the GSO/PD detector is presented

  9. Scintigraphy of cerebral blood flow with N-isopropyl-p-[123I]-iodoamphetamine in cerebrovascular accident

    International Nuclear Information System (INIS)

    Sone, Teruki; Fukunaga, Masao; Otsuka, Nobuaki

    1985-01-01

    In 20 patients with cerebrovascular accident, cerebral blood flow was estimated with N-isopropyl-p-[ 123 I]-iodoamphetamine ( 123 I-IMP) using a rotating gamma camera, and the findings were compared with those of X-CT or angiography. 123 I-IMP study demonstrated the areas of diminished cerebral blood flow in 14 cases. X-CT also demonstrated lesions in 14 cases, however, 123 I-IMP study delineated the lesions more precisely corresponding to the neurological findings. In cases with cerebellar hemorrhage or reversible ischemic neurological deficit (RIND), the lesion could be established only by 123 I-IMP study. It was demonstrated by 123 I-IMP study that vascular stenosis or abnormal vessels seen on angiography in patients with vertebro-basilar insufficiency or venous angioma was not necessarily accompanied by diminished blood flow. It was shown that scintigraphy with 123 I-IMP was a non-invasive, safe and extremely useful method to estimate the regional cerebral blood flow. (author)

  10. Laser-induced surface recrystallization of polycrystalline PbI2 thick films for X-ray detector application

    Science.gov (United States)

    Sun, Hui; Zhao, Beijun; Zhu, Xinghua; Zhu, Shifu; Yang, Dingyu; Wangyang, Peihua; Gao, Xiuyin

    2018-01-01

    In this work, laser-induced surface recrystallization process was developed to improve the surface properties and device performance of the polycrystalline PbI2 thick films prepared by using close space vapor deposition method. A continuous polycrystalline PbI2 recrystallized layer with a better mechanical strength and reflectivity improved from 2% to 4%-6% was obtained by this recrystallization process for the films with mechanical pretreatment. Other polytypes is absent in the recrystallized layer with the 2H-polytype remaining before and after treatment and obtaining improved electrical and X-ray photoelectric response performance. The pretreatment such as mechanical cutting/polishing and hydrogenation is necessary to lower the non-wetting crystallization behavior during the recrystallization process due to the rough surface state and oxygen contamination.

  11. Design for measurement system of Doppler broadening profiles with the coincidence technique using a NaI detector in colinear geometry with the Ge detector

    International Nuclear Information System (INIS)

    Mori, Kazuteru; Uedono, Akira; Tanigawa, Shoichiro; Nakai, Katsuhiko

    1998-01-01

    The measurement system for Doppler broadening profiles with the coincidence technique using a NaI detector in colinear geometry with a Ge detector was developed. The principle of measurement system with the coincidence technique between the NaI detector and the Ge detector was described. Application of the system for the detection of vacancy-type defects introduced by electron irradiation in Czochralski-(Cz) grown Si was shown. Detail in the difference between the Doppler broadening profiles for Cz-Si and Si grown by the floating-zone method was also obtained. (author)

  12. Design for measurement system of Doppler broadening profiles with the coincidence technique using a NaI detector in colinear geometry with the Ge detector

    Energy Technology Data Exchange (ETDEWEB)

    Mori, Kazuteru; Uedono, Akira; Tanigawa, Shoichiro [Tsukuba Univ., Ibaraki (Japan). Inst. of Materials Science; Nakai, Katsuhiko

    1998-08-01

    The measurement system for Doppler broadening profiles with the coincidence technique using a NaI detector in colinear geometry with a Ge detector was developed. The principle of measurement system with the coincidence technique between the NaI detector and the Ge detector was described. Application of the system for the detection of vacancy-type defects introduced by electron irradiation in Czochralski-(Cz) grown Si was shown. Detail in the difference between the Doppler broadening profiles for Cz-Si and Si grown by the floating-zone method was also obtained. (author)

  13. Vztah stresové inkontinence moči či urgence k defektu předního kompartmentu před jeho operačním řešením a po něm

    Czech Academy of Sciences Publication Activity Database

    Martan, A.; Švabík, K.; Mašata, J.; Haddad El, R.; Pavlíková, Markéta

    2010-01-01

    Roč. 75, č. 2 (2010), s. 118-125 ISSN 1210-7832 Grant - others:GA MZd(CZ) NR9216 Institutional research plan: CEZ:AV0Z10300504 Keywords : inkontinence moči u žen * chirurgie pánevního dna * prolaps pánevních orgánů * transperineální ultrazvukové vyšetření Subject RIV: BB - Applied Statistics, Operational Research

  14. High-Resolution PET Detector. Final report

    International Nuclear Information System (INIS)

    Karp, Joel

    2014-01-01

    The objective of this project was to develop an understanding of the limits of performance for a high resolution PET detector using an approach based on continuous scintillation crystals rather than pixelated crystals. The overall goal was to design a high-resolution detector, which requires both high spatial resolution and high sensitivity for 511 keV gammas. Continuous scintillation detectors (Anger cameras) have been used extensively for both single-photon and PET scanners, however, these instruments were based on NaI(Tl) scintillators using relatively large, individual photo-multipliers. In this project we investigated the potential of this type of detector technology to achieve higher spatial resolution through the use of improved scintillator materials and photo-sensors, and modification of the detector surface to optimize the light response function.We achieved an average spatial resolution of 3-mm for a 25-mm thick, LYSO continuous detector using a maximum likelihood position algorithm and shallow slots cut into the entrance surface

  15. Three-dimensional Ag2O/Bi5O7I p-n heterojunction photocatalyst harnessing UV-vis-NIR broad spectrum for photodegradation of organic pollutants.

    Science.gov (United States)

    Chen, Yannan; Zhu, Gangqiang; Hojamberdiev, Mirabbos; Gao, Jianzhi; Zhu, Runliang; Wang, Chenghui; Wei, Xiumei; Liu, Peng

    2018-02-15

    Ag 2 O nanoparticles-loaded Bi 5 O 7 I microspheres forming a three dimensional Ag 2 O/Bi 5 O 7 I p-n heterojunction photocatalyst with wide-spectrum response were synthesized in this study. The results of transmission electron microscopy observations revealed that the Ag 2 O nanoparticles with the diameter of ca. 10-20nm were distributed on the surfaces of Bi 5 O 7 I nanosheets. The as-synthesized Ag 2 O/Bi 5 O 7 I exhibited an excellent wide-spectrum response to wavelengths ranging from ultraviolet (UV) to near-infrared (NIR), indicating its potential for effective utilization of solar energy. Compared with pure Bi 5 O 7 I, the Ag 2 O/Bi 5 O 7 I composite also demonstrated excellent photocatalytic activity for the degradation of Bisphenol A and phenol in aqueous solution under visible LED light irradiation. Among samples, the 20% Ag 2 O/Bi 5 O 7 I composite photocatalyst showed the highest photocatalytic activity for the degradation of Bisphenol A and phenol in aqueous solution. In addition, the 20% Ag 2 O/Bi 5 O 7 I composite also exhibited a photocatalytic activity for the degradation of Bisphenol A under NIR light irradiation. The improved photocatalytic activity is attributed to the formation of a p-n heterojunction between Ag 2 O and Bi 5 O 7 I, allowing the efficient utilization of solar energy (from UV to NIR) and high separation efficiency of photogenerated electron-hole pairs. The present work is desirable to explore a possible avenue for the full utilization of solar energy. Copyright © 2017 Elsevier B.V. All rights reserved.

  16. Clinical applications of brain spect with N-isopropyl-123I-p-iodoamphetamine

    International Nuclear Information System (INIS)

    Moretti, J.L.; Sergent, A.; Raynaud, C.; Baron, J.C.; Samson, Y.; Lassen, N.; Bourdoiseau, M.

    1985-01-01

    Single-photon emission computed tomography (SPECT) with N-isopropyl- 123 I-p-iodoamphetamine (IAMP-I-123) was used for 250 patients suffering from brain disorders, comprising brain tumours (36), normal-pressure hydrocephalus (NPH) (23), cerebrovascular pathologies (127) and partial epilepsy (64). Brain tumours were found to be hypoactive, whatever the grade and nature. Frontal hypoactivity was found in NPH patients, and IAMP-I-123 perfusion was improved after cerebral spinal fluid (CSF) lumbar drainage, giving a good predictive criterion of clinical outcome after CSF diversion. For cerebrovascular disorders, it was possible to obtain with IAMP-I-123 SPECT larger pictures of hypoactive areas than the pictures of hypodense lesions obtained with X-ray CT scans; other hypoactive areas that could not be observed with CT were also delineated by IAMP-I-123 SPECT. The hypoactive areas found in constituted infarctions can present two types of kinetics - those which are 'persistent' (still present on delayed scans performed 5 h after IAMP-I-123 injection) and those which disappear with time, thereby suggesting hypofunctional parenchyma without tissue impairment. IAMP-I-123 SPECT was proved to be useful in assessing ischaemia, especially in reversible ischaemia patients, by defining the affected arterial territory and guiding complementary arteriographic exploration in view of surgical procedures. IAMP-I-123 SPECT was able to accurately delineate the affected parenchymal areas. It could also be of help in the follow-up of the efficiency of drug therapy and surgery, and it can be regarded as a good predictive criterion for stroke rehabilitation. The results obtained with IAMP-I-123 indicate that the lesional and epileptogenic areas in epileptic patients are hypoactive. The localization of these territories by IAMP-I-123 SPECT correlates well with other, more accurate, neuroradiological and stereotactic techniques. (author)

  17. Characterization of Si pixel detectors of different thickness

    International Nuclear Information System (INIS)

    Bisogni, M.G.; Boscardin, M.; Dalla Betta, G.F.; Delogu, P.; Fantacci, M.E.; Gregori, P.; Linsalata, S.; Novelli, M.; Piemonte, C.; Quattrocchi, M.; Rosso, V.; Stefanini, A.; Zorzi, N.; Zucca, S.

    2004-01-01

    Tests on silicon pixel detector in the mammographic energy range have shown good imaging performances so, in order to improve the efficiency in this energy range, we have designed thicker detectors of the p + /n type. The detectors have been fabricated by ITC-IRST (Trento, Italy) in high resistivity silicon substrates (300 and 525 μm thick). A TCAD simulation work has been carried out to optimize the electric field distribution and to enhance the breakdown voltage. Very low leakage current and high breakdown voltage characteristics have been measured on detectors in preliminary on-wafer tests. After that, detectors have been bump-bonded to a dedicated VLSI electronic chips, realizing an assembly. Choosing the best set-up condition and using a standard mammographic tube, we have acquired a large area image (8x8 cm 2 ) of the RMI 156 phantom, recommended for mammographic quality checks. In order to cover the whole surface, we have acquired different images translating the phantom over the assembly. We present some selected results for these assemblies both for the electrical characteristics and for the imaging performances

  18. A CVD Diamond Detector for (n,a) Cross-Section Measurements

    CERN Document Server

    Weiss, Christina; Griesmayer, Erich; Guerrero, Carlos

    A novel detector based on the chemical vapor deposition (CVD) diamond technology has been developed in the framework of this PhD, for the experimental determination of (n,a) cross-sections at the neutron time-of-flight facility n_TOF at CERN. The 59Ni(n,a)56Fe cross-section, which is relevant for astrophysical questions as well as for risk-assessment studies in nuclear technology, has been measured in order to validate the applicability of the detector for such experiments. The thesis is divided in four parts. In the introductory part the motivation for measuring (n,a) cross-sections, the experimental challenges for such measurements and the reasons for choosing the CVD diamond technology for the detector are given. This is followed by the presentation of the n_TOF facility, an introduction to neutron-induced nuclear reactions and a brief summary of the interaction of particles with matter. The CVD diamond technology and the relevant matters related to electronics are given as well in this first part of the t...

  19. Inclusive spectra of reactions 56Fe(P, XP), (P, X α) measured at Ep=29,9 MeV

    International Nuclear Information System (INIS)

    Duisebayev, A.; Duisebayev, B.; Zholdybaev, T.; Ismailov, K.; Sadykov, B.

    2004-01-01

    Full text: The inclusive spectra of protons and α-particles emitted from proton induced reactions on 56 Fe isotopes at E p =29.9 ± 0.1MeV in angular range 30-135 o with the step 15 o have been measured on isochronous cyclotron U-150M of Institute of Nuclear Physics. Typically, intensities between 40 and 180 nA have been utilized with a beam energy resolution of 0.3%. The self-supporting isotopic enriched (95%) foil of 56 Fe with thickness of 2.7 mg/cm 2 in these experiments has been used. The two-detector telescope system (Δ E-E) registration of α-particles has been used. The thicknesses of silicon detectors are ΔE-30 microns and E-2000 microns. Solid angle subtended by a telescope of detectors was equal to Ω =2.72 * 10 -5 sr ± 1%. For registration and identification of protons in the whole energy range the same two-detector telescope (Δ E-E) system has been used. It was consisted of silicon surface-barrier ORTEC detector (100 micron) and a scintillation detector with a total absorption of CsI (Tl) (25 mm). The solid angle subtended by a telescope of detectors is equal to Ω =2.59 * 10 -5 sr. Basing on exciton model of pre-equilibrium decay have been calculated spectra of multi-step direct (MSD) and compound (MSC) processes for (p,xp), (p,x α) reaction on 56 Fe. From comparison of experimental and calculated integral spectra it follows that main contribution in experimental cross section is due to MSD reaction mechanism. It is shown also that evaporated part of cross-section is underestimated in framework of used version of exciton model. It can be explained by the following fact that used master equation approach gives only pre-equilibrium part of MSC process, so the emission from complex equilibrium configuration of composite system are not considered

  20. Nærvær i pædagogisk praksis

    DEFF Research Database (Denmark)

    Nærvær i pædagogisk praksis handler om, hvordan lærere og pædagoger kan arbejde med mindfulness i skole og daginstitution. Målet er at give inspiration til, hvordan man kan skabe et lærings- og udviklingsmiljø, som understøtter en praksis, hvor børn får erfaringer med at være til stede i sig selv......, ligesom de giver eksempler på nærværende kunst- og musikundervisning.   Den røde tråd er ønsket om at bistå barnet i at rumme sig selv og andre og en interesse for de muligheder, som øget nærvær kan give det enkelte barn og fællesskabet....

  1. Design, fabrication and characterization of an a-Si:H-based UV detector for sunburn applications

    Science.gov (United States)

    Bayat, Khadijeh; Vygranenko, Yuriy; Sazonov, Andrei; Farrokh-Baroughi, Mahdi

    2006-12-01

    A thin-film a-Si:H pin detector was developed for selective detection of UVA (320-400 nm) radiation. In order for the fabrication technology to be transferable onto flexible substrates, all of the processing steps were conducted at temperatures less than 125 °C. The measured saturation current as low as 2 pA cm-2 and the ideality factor of 1.47 show that the pin diodes have a good quality i-layer as well as p-i and n-i interfaces. The film thicknesses were optimized to suppress the detector sensitivity in the visible spectral range, and the peak of spectral response was observed at 410 nm. The selectivity estimated from the ratio of the photocurrent generated by UVA absorption to the total photocurrent is 21%.

  2. Novel silicon n-on-p edgeless planar pixel sensors for the ATLAS upgrade

    Energy Technology Data Exchange (ETDEWEB)

    Bomben, M., E-mail: marco.bomben@cern.ch [Laboratoire de Physique Nucleaire et de Hautes Énergies (LPNHE), Paris (France); Bagolini, A.; Boscardin, M. [Fondazione Bruno Kessler, Centro per i Materiali e i Microsistemi (FBK-CMM) Povo di Trento (Italy); Bosisio, L. [Università di Trieste, Dipartimento di Fisica and INFN, Trieste (Italy); Calderini, G. [Laboratoire de Physique Nucleaire et de Hautes Énergies (LPNHE), Paris (France); Dipartimento di Fisica E. Fermi, Università di Pisa, Pisa (Italy); INFN Sez. di Pisa, Pisa (Italy); Chauveau, J. [Laboratoire de Physique Nucleaire et de Hautes Énergies (LPNHE), Paris (France); Giacomini, G. [Fondazione Bruno Kessler, Centro per i Materiali e i Microsistemi (FBK-CMM) Povo di Trento (Italy); La Rosa, A. [Section de Physique (DPNC), Université de Genève, Genève (Switzerland); Marchiori, G. [Laboratoire de Physique Nucleaire et de Hautes Énergies (LPNHE), Paris (France); Zorzi, N. [Fondazione Bruno Kessler, Centro per i Materiali e i Microsistemi (FBK-CMM) Povo di Trento (Italy)

    2013-12-01

    In view of the LHC upgrade phases towards HL-LHC, the ATLAS experiment plans to upgrade the inner detector with an all-silicon system. The n-on-p silicon technology is a promising candidate for the pixel upgrade thanks to its radiation hardness and cost effectiveness. The edgeless technology would allow for enlarging the area instrumented with pixel detectors. We report on the development of novel n-on-p edgeless planar pixel sensors fabricated at FBK (Trento, Italy), making use of the active edge concept for the reduction of the dead area at the periphery of the device. After discussing the sensor technology and fabrication process, we present device simulations (pre- and post-irradiation) performed for different sensor configurations. First preliminary results obtained with the test-structures of the production are shown.

  3. Novel silicon n-on-p edgeless planar pixel sensors for the ATLAS upgrade

    International Nuclear Information System (INIS)

    Bomben, M.; Bagolini, A.; Boscardin, M.; Bosisio, L.; Calderini, G.; Chauveau, J.; Giacomini, G.; La Rosa, A.; Marchiori, G.; Zorzi, N.

    2013-01-01

    In view of the LHC upgrade phases towards HL-LHC, the ATLAS experiment plans to upgrade the inner detector with an all-silicon system. The n-on-p silicon technology is a promising candidate for the pixel upgrade thanks to its radiation hardness and cost effectiveness. The edgeless technology would allow for enlarging the area instrumented with pixel detectors. We report on the development of novel n-on-p edgeless planar pixel sensors fabricated at FBK (Trento, Italy), making use of the active edge concept for the reduction of the dead area at the periphery of the device. After discussing the sensor technology and fabrication process, we present device simulations (pre- and post-irradiation) performed for different sensor configurations. First preliminary results obtained with the test-structures of the production are shown

  4. Prediction of the Response of the Commercial BPW34FS Silicon p-i-n Diode Used as Radiation Monitoring Sensors up to Very High Fluences

    CERN Document Server

    Mekki, J; Glaser, M; Moll, M; Dusseau, L

    2010-01-01

    The effect of radiation damage on Silicon p-i-n diodes has been studied. I-V characteristics of BPW34FS silicon p-i-n diodes irradiated with 24 GeV/c protons up to 6.3 x 10(15) n(eq)/cm(2) have been measured and analyzed. A parameterization predicting the radiation response in the fluence range relevant for the use of the diodes as radiation monitors in Super-LHC experiments is presented.

  5. Outdoor i undervisningen på pædagoguddannelserne i VIA

    DEFF Research Database (Denmark)

    Kjeldsen, Lis Reinholdt

    2011-01-01

    En undersøgelse af hvorvidt undervisere på pædagoguddannelserne i VIA anvender andre kontekster end det traditionelle undervisningslokale i deres undervisning. Der er fokus på omfang og valg af udeområder....

  6. Teorías sobre la clasificación taxonómica de las papas cultivadas (<i>Solanum> L. sect. <i> Petotai> Dumort.. Una revisión

    Directory of Open Access Journals (Sweden)

    Rodríguez Luis Ernesto

    2009-12-01

    Full Text Available <p align="justify">La presente revisión busca reunir diferentes propuestas utilizadas para clasificar las papas cultivadas y sus parientes silvestres (<i>Solanum> L. sect. <i>Petota> Dumort., ya que históricamente se han presentado diferencias entre los taxónomos que han estudiado su clasificación. A la fecha no hay consenso, debido a que el límite entre especies no está definido, y las interrelaciones entre estas son frecuentes. Es importante generar una propuesta definitiva, coherente y práctica, que genere un consenso en la taxonomía de la papa. Esto permitiría conocer el número real de especies, el límite entre ellas y sus interrelaciones y continuos cambios. A su vez, esta información deberá facilitar un mejor aprovechamiento del germoplasma por parte de los programas de mejoramiento genético.p>

  7. CELULE FOTOVOLTAICE CU HOMOJONCŢIUNE DIN InP: REZULTATE ŞI COMPARĂRI

    Directory of Open Access Journals (Sweden)

    Vasile BOTNARIUC

    2016-12-01

    Full Text Available Au fost obţinute homojoncţiuni n-pInP cu strat intermediar p-InP crescut repetat prin metoda HVPE cu sau fără strat frontal nCdS şi au fost cercetate proprietăţile electrice şi fotoelectrice ale acestora. S-a constatat că depunerea stratului intermediar măreşte fotosensibilitatea homostructurilor cu 15…20%. Eficienţa energetică a CF cu structura n+CdS-n+InP-p-InP-p+InP constituie 13,5% pentru fluxul luminos incident de 100 mW×cm-2. Eficienţa CF cu heterostructura nCdS-pInP şi cu strat intermediar similar creşte cu 27%, în comparaţie cu CF cu homostructura n-p--pInP şi cu strat frontal nCdS, având valoarea de 17,3%. Se conturează posibilitatea reală de mărire a eficienţei CF de acest tip.FOTOVOLTAIC CELLS WITH HOMOJUNCTIONS IN InP: REZULTS AND COMPARISONSElectrical and photoelectrical properties of InP p-n homojunctions with an intermediate p-InP layer repeatedly grown by HVPE method, with and without frontal nCdS layer were produced and studied. It was found that the deposition of this intermediate p-InP layer increases the cells photosensitivity by 15 ... 20%. The solar energy conversion efficiency of photovoltaic cell (PC with n+CdS-n+InP-p-InP-p+InP structure is 13.5% at the illumination of 100 mW.cm-2. The efficiency of the PC based on nCdS-pInP heterostructure and an analogic intermediate layer increases to 27% compared with the PC based on n-p--pInP homostructure having a frontal nCdS layer has an efficiency of 17.3%. The possibility of increasing of the efficiency of this PC type is formulated.

  8. Nursery school at Vincennes: O.P.R.I. investigation

    International Nuclear Information System (INIS)

    Pasquier, J.L.; Fouquet, G.; Linden, G.

    2001-01-01

    After five children neoplasms at the nursery of Vincennes, the O.P.R.I. has realised two measurement campaigns during the year 2001. The track of a radioactive contamination, based on the private laboratory analysis has been denied by O.P.R.I. (N.C.)

  9. Silicon Waveguide with Lateral p-i-n Diode for Nonlinearity Compensation by On-Chip Optical Phase Conjugation

    DEFF Research Database (Denmark)

    Gajda, A.; Da Ros, Francesco; Porto da Silva, Edson

    2018-01-01

    A 1-dB Q-factor improvement through optical phase conjugation in a silicon waveguide with a lateral p-i-n diode enables BER

  10. Low Energy X-Ray and γ-Ray Detectors Fabricated on n-Type 4H-SiC Epitaxial Layer

    Science.gov (United States)

    Mandal, Krishna C.; Muzykov, Peter G.; Chaudhuri, Sandeep K.; Terry, J. Russell

    2013-08-01

    Schottky barrier diode (SBD) radiation detectors have been fabricated on n-type 4H-SiC epitaxial layers and evaluated for low energy x- and γ-rays detection. The detectors were found to be highly sensitive to soft x-rays in the 50 eV to few keV range and showed 2.1 % energy resolution for 59.6 keV gamma rays. The response to soft x-rays for these detectors was significantly higher than that of commercial off-the-shelf (COTS) SiC UV photodiodes. The devices have been characterized by current-voltage (I-V) measurements in the 94-700 K range, thermally stimulated current (TSC) spectroscopy, x-ray diffraction (XRD) rocking curve measurements, and defect delineating chemical etching. I-V characteristics of the detectors at 500 K showed low leakage current ( nA at 200 V) revealing a possibility of high temperature operation. The XRD rocking curve measurements revealed high quality of the epitaxial layer exhibiting a full width at half maximum (FWHM) of the rocking curve 3.6 arc sec. TSC studies in a wide range of temperature (94-550 K) revealed presence of relatively shallow levels ( 0.25 eV) in the epi bulk with a density 7×1013 cm-3 related to Al and B impurities and deeper levels located near the metal-semiconductor interface.

  11. Suppression of irradiation effects in gold-doped silicon detectors

    International Nuclear Information System (INIS)

    McPherson, M.; Sloan, T.; Jones, B.K.

    1997-01-01

    Two sets of silicon detectors were irradiated with 1 MeV neutrons to different fluences and then characterized. The first batch were ordinary p-i-n photodiodes fabricated from high-resistivity (400 Ω cm) silicon, while the second batch were gold-doped powder diodes fabricated from silicon material initially of low resistivity (20 Ω cm). The increase in reverse leakage current after irradiation was found to be more in the former case than in the latter. The fluence dependence of the capacitance was much more pronounced in the p-i-n diodes than in the gold-doped diodes. Furthermore, photo current generation by optical means was less in the gold doped devices. All these results suggest that gold doping in silicon somewhat suppresses the effects of neutron irradiation. (author)

  12. Background studies for NaI(Tl) detectors in the ANAIS dark matter project

    International Nuclear Information System (INIS)

    Amaré, J.; Borjabad, S.; Cebrián, S.; Cuesta, C.; Fortuño, D.; García, E.; Ginestra, C.; Gómez, H.; Martínez, M.; Oliván, M. A.; Ortigoza, Y.; Solórzano, A. Ortiz de; Pobes, C.; Puimedón, J.; Sarsa, M. L.; Villar, J. A.; Villar, P.

    2013-01-01

    Several large NaI(Tl) detectors, produced by different companies, have been operated in the Canfranc Underground Laboratory (LSC) in the frame of the ANAIS (Annual modulation with NaI Scintillators) project devoted to the direct detection of dark matter. A complete background model has been developed for a 9.6 kg detector (referred as ANAIS-0 prototype) after a long data taking at LSC. Activities from the natural chains of 238 U and 232 Th, and 40 K in the NaI(Tl) crystal were evaluated applying different methods: discrimination of alpha particles vs beta/gamma background by Pulse Shape Analysis for quantifying the content of the natural chains and coincidence techniques for 40 K. Radioactive contaminations in the detector and shielding components were also determined by HPGe spectrometry. Monte Carlo simulations using Geant4 package were carried out to evaluate their contribution. At high energies, most of the measured background is nicely reproduced; at low energy some non-explained components are still present, although some plausible background sources have been analyzed. The 40 K content of the NaI(Tl) crystal has been confirmed to be the dominant contributor to the measured background with this detector. In addition, preliminary results of the background characterization, presently underway at the LSC, of two recently produced NaI(Tl) detectors, with 12.5 kg mass each, will be presented: cosmogenic induced activity has been clearly observed and is being quantified, and 40 K activity at a level ten times lower than in ANAIS-0 has been determined

  13. Performance of a high-resolution CsI(Tl)-PIN readout detector

    International Nuclear Information System (INIS)

    Kudenko, Yu.G.; Imazato, J.

    1992-10-01

    A study of a large-volume CsI(Tl) detector with a PIN diode readout was carried out. Our results show a light output of ≤20000 photoelectrons/MeV, an equivalent noise charge (rms) of about 900 electrons, and an equivalent noise level of ≤ 60 keV. We obtained an energy resolution of 11.2% (fwhm) for 1275 keV gamma rays from a 22 Na source. The characteristics of the PIN - preamplifier system as well as the parameters of a small CsI(Tl) - PIN detector with a direct and wavelength shifter readout are also reported. (author)

  14. Recommendations for the measurement 131I in human thyroid using a detector of NaI(Tl)

    International Nuclear Information System (INIS)

    Puerta Yepes, N.; Rojo, A.M.; Andres, P.A.

    2010-01-01

    The Argentine Total Body Counter Laboratory of the Nuclear Regulatory Authority participated in the last regional intercomparison Exercise organized in the frame of the IAEA Project RLA 9/066 related with in vivo measurements of 131 I in the thyroid. There were identified some difficulties in determining the efficiency and calibration factor (CF) for the 131 I when a source of 133 Ba and a detector of NaI (Tl) are used in the calibration process. Independent measurements were performed for two calibration sources of known activity ( 133 Ba and 131 I) with identical geometry pattern and using a gamma spectrometry system with NaI(Ti) detector. It was found that the region of interest (ROI) which, both in the spectrum of 133 Ba as in the spectrum of 131 I, had the same efficiency. It was determined the activity of the source of 133 Ba , distributed in the intercomparison, and the calibrated source of 131 I using different values of efficiency and FC obtained. It was analyzed the conditions under which the use of 133 Ba as a source of calibration is effective for the measurement of 131 I. (authors) [es

  15. Análisis de la colaboración entre las empresas biotecnológicas españolas con actividades de I+D y el sistema público de I+D

    Directory of Open Access Journals (Sweden)

    García-Carpintero, Esther

    2014-06-01

    Full Text Available The development and improvement of cooperation between the industrial sector and the public R&D system can produce competitive advantages for the companies. The present work describes experiences and perceptions of Spanish biotechnology companies in their collaboration with the public R&D system. Results show that almost all the biotechnological companies with R&D activities (93.6% have cooperated with the public R&D system. The main barriers found by the companies are the excess of bureaucracy and the slow response of public researchers. Results obtained also suggest the need to establish public policies and programmes to promote knowledge and technology transfer from public research centres to companies, with a special focus on encouraging researchers from the public R&D system and on improving how Technology Transfer Offices work.El desarrollo y la mejora de la cooperación entre el sector productivo y el sistema público de I+D puede generar un conjunto de ventajas competitivas para estas empresas. El presente trabajo describe las experiencias y percepciones de las empresas biotecnológicas españolas en su colaboración con el sistema público de I+D. Los resultados muestran que prácticamente la totalidad de empresas biotecnológicas españolas con actividades de I+D (un 93,6% han mantenido algún tipo de colaboración con el sistema público de I+D. Los principales obstáculos percibidos por estas empresas en su colaboración con el sistema público de I+D son el exceso de burocracia y la respuesta lenta de los investigadores. Los resultados obtenidos sugieren la conveniencia de establecer políticas y programas públicos para fomentar la transferencia de conocimiento y tecnología desde el sistema público de I+D a las empresas, fundamentalmente centrados en la necesidad de incentivar a los investigadores del sistema público de I+D y mejorar el funcionamiento de las Oficinas de Transferencia de Tecnología.

  16. [Juzhnoselkupskij slovar N. P. Grigorovskogo] / Ago Künnap

    Index Scriptorium Estoniae

    Künnap, Ago, 1941-

    2007-01-01

    Juzhnoselkupskij slovar N. P. Grigorovskogo. Obrabotka i izdanie Jevgenija Helimskogo. Südselkupisches Wörterbuch von N. P. Grigorovski. Bearbeitet und herausgegeben von Eugen Helimski, Hamburg 2007. (Hamburger Sibirische Finnougrische Materialien. Habent Sua Fata Manuscripta. Band 4)

  17. Trigger and aperture of the surface detector array of the Pierre Auger Observatory

    NARCIS (Netherlands)

    Abraham, J.; Abreu, P.; Aglietta, M.; Ahn, E. J.; Allard, D.; Allekotte, I.; Allen, J.; Alvarez-Muniz, J.; Ambrosio, M.; Anchordoqui, L.; Andringa, S.; Anticic, T.; Anzalone, A.; Aramo, C.; Arganda, E.; Arisaka, K.; Arqueros, F.; Asorey, H.; Assis, P.; Aublin, J.; Ave, M.; Avila, G.; Baecker, T.; Badagnani, D.; Balzer, M.; Barber, K. B.; Barbosa, A. F.; Barroso, S. L. C.; Baughman, B.; Bauleo, P.; Beatty, J. J.; Becker, B. R.; Becker, K. H.; Belletoile, A.; Bellido, J. A.; BenZvi, S.; Berat, C.; Bergmann, T.; Bertou, X.; Biermann, P. L.; Billoir, P.; Blanch-Bigas, O.; Blanco, F.; Blanco, M.; Bleve, C.; Bluemer, H.; Bohacova, M.; Boncioli, D.; Bonifazi, C.; Bonino, R.; Borodai, N.; Brack, J.; Brogueira, P.; Brown, W. C.; Bruijn, R.; Buchholz, P.; Bueno, A.; Burton, R. E.; Busca, N. G.; Caballero-Mora, K. S.; Caramete, L.; Caruso, R.; Castellina, A.; Catalano, O.; Cataldi, G.; Cazon, L.; Cester, R.; Chauvin, J.; Chiavassa, A.; Chinellato, J. A.; Chou, A.; Chudoba, J.; Clay, R. W.; Colombo, E.; Coluccia, M. R.; Conceicao, R.; Contreras, F.; Cook, H.; Cooper, M. J.; Coppens, J.; Cordier, A.; Cotti, U.; Coutu, S.; Covault, C. E.; Creusot, A.; Criss, A.; Cronin, J.; Curutiu, A.; Dagoret-Campagne, S.; Dallier, R.; Daumiller, K.; Dawson, B. R.; de Almeida, R. M.; De Domenico, M.; De Donato, C.; de Jong, S. J.; De La Vega, G.; de Mello Junior, W. J. M.; de Mello Neto, J. R. T.; De Mitri, I.; de Souza, V.; de Vries, K. D.; Decerprit, G.; del Peral, L.; Deligny, O.; Della Selva, A.; Delle Fratte, C.; Dembinski, H.; Di Giulio, C.; Diaz, J. C.; Castro, M. L. Diaz; Diep, P. N.; Dobrigkeit, C.; D'Olivo, J. C.; Dong, P. N.; Dorofeev, A.; dos Anjos, J. C.; Dova, M. T.; D'Urso, D.; Dutan, I.; DuVernois, M. A.; Ebr, J.; Engel, R.; Erdmann, M.; Escobar, C. O.; Etchegoyen, A.; Facal San Luis, P.; Falcke, H.; Farrar, G.; Fauth, A. C.; Fazzini, N.; Ferrero, A.; Fick, B.; Filevich, A.; Filipcic, A.; Fleck, I.; Fliescher, S.; Fracchiolla, C. E.; Fraenkel, E. D.; Froehlich, U.; Fulgione, W.; Gamarra, R. F.; Gambetta, S.; Garcia, B.; Garcia Gamez, D.; Garcia-Pinto, D.; Garrido, X.; Gelmini, G.; Gemmeke, H.; Ghia, P. L.; Giaccari, U.; Giller, M.; Glass, H.; Goggin, L. M.; Gold, M. S.; Golup, G.; Gomez Albarracin, F.; Gomez Berisso, M.; Goncalves, P.; Gonzalez, D.; Gonzalez, J. G.; Gora, D.; Gorgi, A.; Gouffon, P.; Gozzini, S. R.; Grashorn, E.; Grebe, S.; Grigat, M.; Grillo, A. F.; Guardincerri, Y.; Guarino, F.; Guedes, G. P.; Hague, J. D.; Halenka, V.; Hansen, P.; Harari, D.; Harmsma, S.; Harton, J. L.; Haungs, A.; Hebbeker, T.; Heck, D.; Herve, A. E.; Hojvat, C.; Holmes, V. C.; Homola, P.; Hoerandel, J. R.; Horneffer, A.; Hrabovsky, M.; Huege, T.; Hussain, M.; Iarlori, M.; Insolia, A.; Ionita, F.; Italiano, A.; Jiraskova, S.; Kadija, K.; Kaducak, M.; Kampert, K. H.; Karova, T.; Kasper, P.; Kegl, B.; Keilhauer, B.; Keivani, A.; Kelley, J.; Kemp, E.; Kieckhafer, R. M.; Klages, H. O.; Kleifges, M.; Kleinfeller, J.; Knapik, R.; Knapp, J.; Koang, D. -H.; Krieger, A.; Kroemer, O.; Kruppke-Hansen, D.; Kuehn, F.; Kuempel, D.; Kulbartz, K.; Kunka, N.; Kusenko, A.; La Rosa, G.; Lachaud, C.; Lago, B. L.; Lautridou, P.; Leao, M. S. A. B.; Lebrun, D.; Lebrun, P.; Lee, J.; Leigui de Oliveira, M. A.; Lemiere, A.; Letessier-Selvon, A.; Lhenry-Yvon, I.; Lopez, R.; Lopez Aguera, A.; Louedec, K.; Lozano Bahilo, J.; Lucero, A.; Ludwig, M.; Lyberis, H.; Maccarone, M. C.; Macolino, C.; Maldera, S.; Mandat, D.; Mantsch, P.; Mariazzi, A. G.; Marin, V.; Maris, I. C.; Marquez Falcon, H. R.; Marsella, G.; Martello, D.; Martinez Bravo, O.; Mathes, H. J.; Matthews, J.; Matthews, J. A. J.; Matthiae, G.; Maurizio, D.; Mazur, P. O.; McEwen, M.; Medina-Tanco, G.; Melissas, M.; Melo, D.; Menichetti, E.; Menshikov, A.; Meurer, C.; Micanovic, S.; Micheletti, M. I.; Miller, W.; Miramonti, L.; Mollerach, S.; Monasor, M.; Ragaigne, D. Monnier; Montanet, F.; Morales, B.; Morello, C.; Moreno, E.; Moreno, J. C.; Morris, C.; Mostafa, M.; Mueller, S.; Muller, M. A.; Mussa, R.; Navarra, G.; Navarro, J. L.; Navas, S.; Necesal, P.; Nellen, L.; Nhung, P. T.; Nierstenhoefer, N.; Nitz, D.; Nosek, D.; Nozka, L.; Nyklicek, M.; Oehlschlaeger, J.; Olinto, A.; Oliva, P.; Olmos-Gilbaja, V. M.; Ortiz, M.; Pacheco, N.; Selmi-Dei, D. Pakk; Palatka, M.; Pallotta, J.; Palmieri, N.; Parente, G.; Parizot, E.; Parlati, S.; Parra, A.; Parrisius, J.; Parsons, R. D.; Pastor, S.; Paul, T.; Pavlidou, V.; Payet, K.; Pech, M.; Pekala, J.; Pelayo, R.; Pepe, I. M.; Perrone, L.; Pesce, R.; Petermann, E.; Petrera, S.; Petrinca, P.; Petrolini, A.; Petrov, Y.; Petrovic, J.; Pfendner, C.; Piegaia, R.; Pierog, T.; Pimenta, M.; Pirronello, V.; Platino, M.; Ponce, V. H.; Pontz, M.; Privitera, P.; Prouza, M.; Quel, E. J.; Rautenberg, J.; Ravel, O.; Ravignani, D.; Redondo, A.; Revenu, B.; Rezende, F. A. S.; Ridky, J.; Riggi, S.; Risse, M.; Ristori, P.; Riviere, C.; Rizi, V.; Robledo, C.; Rodriguez, G.; Rodriguez Martino, J.; Rodriguez Rojo, J.; Rodriguez-Cabo, I.; Rodriguez-Frias, M. D.; Ros, G.; Rosado, J.; Rossler, T.; Roth, M.; Rouille-d'Orfeuil, B.; Roulet, E.; Rovero, A. C.; Salamida, F.; Salazar, H.; Salina, G.; Sanchez, F.; Santander, M.; Santo, C. E.; Santo, E.; Santos, E. M.; Sarazin, F.; Sarkar, S.; Sato, R.; Scharf, N.; Scherini, V.; Schieler, H.; Schiffer, P.; Schmidt, A.; Schmidt, F.; Schmidt, T.; Scholten, O.; Schoorlemmer, H.; Schovancova, J.; Schovanek, P.; Schroeder, F.; Schulte, S.; Schuessler, F.; Schuster, D.; Sciutto, S. J.; Scuderi, M.; Segreto, A.; Semikoz, D.; Settimo, M.; Shellard, R. C.; Sidelnik, I.; Siffert, B. B.; Sigl, G.; Smialkowski, A.; Smida, R.; Snow, G. R.; Sommers, P.; Sorokin, J.; Spinka, H.; Squartini, R.; Stasielak, J.; Stephan, M.; Strazzeri, E.; Stutz, A.; Suarez, F.; Suomijarvi, T.; Supanitsky, A. D.; Susa, T.; Sutherland, M. S.; Swain, J.; Szadkowski, Z.; Tamashiro, A.; Tamburro, A.; Tapia, A.; Tarutina, T.; Tascau, O.; Tcaciuc, R.; Tcherniakhovski, D.; Tegolo, D.; Thao, N. T.; Thomas, D.; Tiffenberg, J.; Timmermans, C.; Tkaczyk, W.; Peixoto, C. J. Todero; Tome, B.; Tonachini, A.; Travnicek, P.; Tridapalli, D. B.; Tristram, G.; Trovato, E.; Tueros, M.; Ulrich, R.; Unger, M.; Urban, M.; Valdes Galicia, J. F.; Valino, I.; Valore, L.; van den Berg, A. M.; Vazquez, J. R.; Vazquez, R. A.; Veberic, D.; Venters, T.; Verzi, V.; Videla, M.; Villasenor, L.; Vorobiov, S.; Voyvodic, L.; Wahlberg, H.; Wahrlich, P.; Wainberg, O.; Warner, D.; Watson, A. A.; Westerhoff, S.; Whelan, B. J.; Wieczorek, G.; Wiencke, L.; Wilczynska, B.; Wilczynski, H.; Williams, C.; Winchen, T.; Winnick, M. G.; Wundheiler, B.; Yamamoto, T.; Younk, P.; Yuan, G.; Yushkov, A.; Zas, E.; Zavrtanik, D.; Zavrtanik, M.; Zaw, I.; Zepeda, A.; Ziolkowski, M.

    2010-01-01

    The surface detector array of the Pierre Auger Observatory consists of 1600 water-Cherenkov detectors, for the study of extensive air showers (EAS) generated by ultra-high-energy cosmic rays. We describe the trigger hierarchy, from the identification of candidate showers at the level of a single

  18. Room Temperature Direct Band Gap Emission from Ge p-i-n Heterojunction Photodiodes

    Directory of Open Access Journals (Sweden)

    E. Kasper

    2012-01-01

    Full Text Available Room temperature direct band gap emission is observed for Si-substrate-based Ge p-i-n heterojunction photodiode structures operated under forward bias. Comparisons of electroluminescence with photoluminescence spectra allow separating emission from intrinsic Ge (0.8 eV and highly doped Ge (0.73 eV. Electroluminescence stems from carrier injection into the intrinsic layer, whereas photoluminescence originates from the highly n-doped top layer because the exciting visible laser wavelength is strongly absorbed in Ge. High doping levels led to an apparent band gap narrowing from carrier-impurity interaction. The emission shifts to higher wavelengths with increasing current level which is explained by device heating. The heterostructure layer sequence and the light emitting device are similar to earlier presented photodetectors. This is an important aspect for monolithic integration of silicon microelectronics and silicon photonics.

  19. The 1/f noise in a p-i-n diode and in a diode laser below threshold

    NARCIS (Netherlands)

    Fronen, R.J.; Hooge, F.N.

    1991-01-01

    --A theoretical treatment is given of number fluctuations induced by mobility fluctuations in the intrinsic region of a p-i-n diode. Mobility fluctuations lead to fluctuations in voltage across the intrinsic region. In the a.c. short-circuit situation, fluctuations across the intrinsic region result

  20. Pulse-height response of silicon surface-barrier detectors to high-energy heavy ions

    International Nuclear Information System (INIS)

    Smith, G.D.

    1973-01-01

    The pulse-height defect (PHD) of high-energy heavy ions in silicon surface-barrier detectors can be divided into three components: (1) energy loss in the gold-surface layer, (2) a nuclear-stopping defect, and (3) a defect due to recombination of electron-hole pairs in the plasma created by the heavy ion. The plasma recombination portion of the PHD was the subject of this study using the variation of the PHD with (1) the angle of incidence of incoming heavy ions, and (2) changes in the detector bias. The Tandem Van de Graaff accelerator at Argonne National Laboratory was used to produce scattered beam ions ( 32 S, 35 Cl) and heavy target recoils (Ni, Cu, 98 Mo, Ag, Au) at sufficient energies to produce a significant recombination defect. The results confirm the existence of a recombination zone at the front surface of these detectors and the significance of plasma recombination as a portion of the pulse-height defect. (Diss. Abstr. Int., B)

  1. Si(Li)-NaI(Tl) sandwich detector array for measurements of trace radionuclides in soil samples

    International Nuclear Information System (INIS)

    Strauss, M.G.; Sherman, I.S.; Roche, C.T.; Pehl, R.H.

    1986-01-01

    An ultra-sensitive X/γ-ray detector system for assaying trace radioactivity in actinide contaminated soil and ash samples has been developed. The new system consists of an array of 6 large Si(Li) X-ray detectors sensitive on both faces and mounted on edge in a paddle-shaped cryostat with a 14 cm diameter Be window on each side. The paddle, with a sample of the soil placed at each window, is sandwiched between 2 large NaI(Tl) scintillators which suppress the γ background. With X-rays being measured simultaneously from soil in 2 sample holders and background reduced by 50% using anticoincidence, the sensitivity of this detector is 4 times higher than that of conventionally mounted Si(Li) detectors. A soil sample containing 50 pCi/g 239 Pu was measured in 5 min with an uncertainty of 1 and NpLsub(β1) X-ray peaks are resolved thus permitting measurement of trace Pu in the presence of 241 Am. This is the most sensitive and selective detector known for nondestructive assay of radioactivity in soil and other samples. (orig.)

  2. Calibration of a single hexagonal NaI(Tl) detector using a new numerical method based on the efficiency transfer method

    Energy Technology Data Exchange (ETDEWEB)

    Abbas, Mahmoud I., E-mail: mabbas@physicist.net [Physics Department, Faculty of Science, Alexandria University, 21511 Alexandria (Egypt); Badawi, M.S. [Physics Department, Faculty of Science, Alexandria University, 21511 Alexandria (Egypt); Ruskov, I.N. [Frank Laboratory of Neutron Physics, Joint Institute for Nuclear Research, 141980 Dubna (Russian Federation); Institute for Nuclear Research and Nuclear Energy, Bulgarian Academy of Sciences, 1784 Sofia (Bulgaria); El-Khatib, A.M. [Physics Department, Faculty of Science, Alexandria University, 21511 Alexandria (Egypt); Grozdanov, D.N. [Frank Laboratory of Neutron Physics, Joint Institute for Nuclear Research, 141980 Dubna (Russian Federation); Institute for Nuclear Research and Nuclear Energy, Bulgarian Academy of Sciences, 1784 Sofia (Bulgaria); Thabet, A.A. [Department of Medical Equipment Technology, Faculty of Allied Medical Sciences, Pharos University in Alexandria (Egypt); Kopatch, Yu.N. [Frank Laboratory of Neutron Physics, Joint Institute for Nuclear Research, 141980 Dubna (Russian Federation); Gouda, M.M. [Physics Department, Faculty of Science, Alexandria University, 21511 Alexandria (Egypt); Skoy, V.R. [Frank Laboratory of Neutron Physics, Joint Institute for Nuclear Research, 141980 Dubna (Russian Federation)

    2015-01-21

    Gamma-ray detector systems are important instruments in a broad range of science and new setup are continually developing. The most recent step in the evolution of detectors for nuclear spectroscopy is the construction of large arrays of detectors of different forms (for example, conical, pentagonal, hexagonal, etc.) and sizes, where the performance and the efficiency can be increased. In this work, a new direct numerical method (NAM), in an integral form and based on the efficiency transfer (ET) method, is used to calculate the full-energy peak efficiency of a single hexagonal NaI(Tl) detector. The algorithms and the calculations of the effective solid angle ratios for a point (isotropic irradiating) gamma-source situated coaxially at different distances from the detector front-end surface, taking into account the attenuation of the gamma-rays in the detector's material, end-cap and the other materials in-between the gamma-source and the detector, are considered as the core of this (ET) method. The calculated full-energy peak efficiency values by the (NAM) are found to be in a good agreement with the measured experimental data.

  3. Er du klar på pizza og spil i aften?

    DEFF Research Database (Denmark)

    Nielsen, Ditte Lundsgaard

    2017-01-01

    I denne artikel kigger vi lidt nærmere på, hvilke erfaringer, der er opstået hos lærerne og pædagogerne. vi tager udgangspunkt i tre forskellige visuelle formidlingsmetoder: tegneserie, infographics og grafisk facilitering. Kunne denne legen med ord og billeder i sproget i børne- og ungekulturen ...

  4. Development of a coincidence system for radio-nuclide standardization using surface barrier detectors

    International Nuclear Information System (INIS)

    Koskinas, M.F.

    1988-01-01

    A system for the standardization of alpha-gamma or electron-X radionuclide emitters has been developed in the present work. The system consists of one or two surface barrier detectors for alpha or electron detection which are coupled to thin-window NaI (T1) crystals suitable for low energy X or gamma ray detection. The performance of the system has been verified by means of the standardization of 241 Am, 137 Cs and 109 Cd solutions. The activity has been obtained using the extrapolation method applied to the 4Πα-γ and 2Πe c -X coincidence technique. The surface barrier detection efficiency was varied by placing absorbers over the radioactive sources or by changing the source to detector distance. The results were compared to those obtained using conventional absolute systems based on gas-flow and pressurized 4Π proportional counters, or using radioactive solutions standardized in international comparisons spondored by the Bureau International des Poids et Mesures. The expect and measured activities agree within the experimental uncertainties which were: 0.2 % for 241 Am, 0.7% for 137 Cs and 0.6% for 109 Cd. The ratio between the probabilities of (electron capture + internal conversion) and internal conversion for the K-shell of 109 Cd has been determined. The result is: 2.8883 ± 0.016. (author) [pt

  5. YAP:Ce and CsI(Tl) detectors for dielectronic recombination experiment at the CSRm

    International Nuclear Information System (INIS)

    Wen, W.Q.; Ma, X.; Xu, W.Q.; Meng, L.J.; Zhu, X.L.; Gao, Y.; Wang, S.L.; Zhang, P.J.; Zhao, D.M.; Liu, H.P.; Zhu, L.F.; Yang, X.D.; Li, J.; Ma, X.M.; Yan, T.L.; Yang, J.C.; Yuan, Y.J.; Xia, J.W.; Xu, H.S.; Xiao, G.Q.

    2013-01-01

    Highlights: • YAP:Ce and CsI(Tl) scintillation detectors are developed to detect heavy ions at the storage ring. • A high count rate of ∼10 7 s −1 is obtained with the YAP:Ce detector for heavy ion detection. • YAP:Ce detector shows good performance for DR experiment with 3.7 MeV/u 112 Sn 35+ . -- Abstract: The storage ring CSRm in Lanzhou provides good possibilities for electron-ion collision studies with cooled ion beams. To carry on the recombination experiment at the CSRm, a scintillation detector CsI(Tl) to detect the recombined ions was developed and tested. In addition, a YAP:Ce detector has been developed and installed at CSRm and capability of handling a high count rate of ∼10 7 s −1 has been obtained which is sufficient for the future dielectronic recombination experiment at the CSRm. The comparison of the characteristics of these two detectors is presented

  6. Quantum efficiency of cesium iodide photocathodes in the 120-220 nm spectral range traceable to a primary detector standard

    CERN Document Server

    Rabus, H; Richter, M; Ulm, G; Friese, J; Gernhäuser, R; Kastenmüller, A; Maier-Komor, P; Zeitelhack, K

    1999-01-01

    Differently prepared CsI samples have been investigated in the 120-220 nm spectral range for their quantum efficiency, spatial uniformity and the effect of radiation aging. The experiments were performed at the PTB radiometry laboratory at the Berlin synchrotron radiation facility BESSY. A calibrated GaAsP Schottky photodiode was used as transfer detector standard to establish traceability to the primary detector standard, because this type of photodiode - unlike silicon p-on-n photodiodes - proved to be of sufficiently stable response when exposed to vacuum ultraviolet radiation. The paper reviews the experimental procedures that were employed to characterize and calibrate the GaAsP photodiode and reports the results that were obtained on the investigated CsI photocathodes.

  7. Silicon-CsI detector array for heavy-ion reactions

    CERN Document Server

    Norbeck, E; Pogodin, P I; Cheng, Y W; Ingram, F D; Bjarki, O; Grévy, S; Magestro, D J; Molen, A M V; Westfall, G D

    2000-01-01

    An array of 60 silicon-CsI(Tl) detector telescopes has been developed along with associated electronics. The close packing of the telescopes required novel designs for the photodiodes and the silicon DELTA E detectors. Newly developed electronics include preamplifiers, shaping amplifiers, test pulse circuitry, and a module to monitor leakage currents in the silicon diodes. The array covers angles from 5 deg. to 18 deg. in the 4 pi Array at the National Superconducting Cyclotron Laboratory at Michigan State University. It measures protons to 150 MeV and has isotopic resolution for intermediate mass nuclei.

  8. Double-sided FoxFET biased microstrip detectors

    International Nuclear Information System (INIS)

    Allport, P.P.; Carter, J.R.; Dunwoody, U.C.; Gibson, V.; Goodrick, M.J.; Beck, G.A.; Carter, A.A.; Martin, A.J.; Pritchard, T.W.; Bullough, M.A.; Greenwood, N.M.; Lucas, A.D.; Wilburn, C.D.

    1994-01-01

    The use of the field effect transistor, integrated onto AC-coupled silicon detectors, as a novel technique for biasing the implanted p + strips [P.P. Allport et al., Nucl. Instr. and Meth. A 310 (1991) 155], was first employed for the OPAL microvertex detector. The detector has proved very successful, with ladders of three single-sided detectors showing signal/noise of 22 : 1 with MX5 readout electronics [P.P. Allport et al., Nucl. Instr. and Meth. A 324 (1993) 34; Nucl. Phys. B (Proc. Suppl.) 32 (1993) 208]. This technique has been extended to bias also the n + strips and p strips on the ohmic side of a double-sided detector [P.P. Allport et al., Nucl. Instr. and Meth. A, to be submitted]. Full-size detectors with orthogonal readout have been fabricated by Micron and tested with MX7 readout on both sides. Both the junction and ohmic sides of these detectors have similar signal/noise values to those for single-sided wafers [P.P. Allport et al., Nucl. Instr. and Meth. A, to be submitted]. Test structures have been irradiated with beta particles to study the radiation hardness of the devices, and probe station electrical measurements of the detectors and test structures are presented. ((orig.))

  9. Rapid assessment of accidental exposures (RACE) with MCP-N (LiF:Mg,Cu,P) detectors

    International Nuclear Information System (INIS)

    Budzanowski, M.; Bilski, P.; Olko, P.; Saez-Vergara, J.C.; Gomes-Ros, J.M.

    1998-01-01

    The system is based on a new generation of ultra-sensitive thermoluminescent dosemeters and is able to monitor environmental radiation doses at a large number of locations within few days and to perform rapid (24 - 48 hours) in situ dose assessment in the event of any nuclear or radiation accident. Technical specifications of the instrumentation and procedures of the system are given. The linearity of the detector response for doses within the range of 1 μGy to 1 Gy is better than 2%. All the detectors investigated demonstrated a good stability in long-term exposure. The detectors are fully comparable with active detectors in short-term and daily routine dose rate measurements. (M.D.)

  10. Evaluation of detectors for blood bioanalysis in Lu-177 and I-131 therapies for bone marrow dosimetry; Avaliacao de detectores para bioanalise de sangue em terapias com Lu-177 and I-131 para dosimetria de medula ossea

    Energy Technology Data Exchange (ETDEWEB)

    Degenhardt, Amilie Louize

    2016-10-01

    The measures traceability is mandatory for minimizing uncertainties in internal dosimetry for radiopharmaceuticals clinical studies and ensures the quality of the standard. Equipment should have resolution and efficiency compatible with radionuclides energies and, additionally, be able to quantify variations in human bodies' activities samples since the initial administration near the minimum residual activities. For testing three equipment (ionization chamber Capintec 25R, sodium iodine scintillator LTI Genesys Gamma-1 and high hyperpure germanium detector Canberra), they were prepared Lu-177 and I-131 radiation sources simulating patient's blood samples activities by adopting the following hypothesis: (1) initial activities according the Brazilian protocols; (2) blood volume in the whole body (5.3 L for adult men and 1.4 L for 5 years-old children); (3) effective half-lives (1.61 h and 42.9 h for Lu-177 bi-exponential adjustment and 15.7 h for I-131 mono-exponential adjustment); (4) sampling between 30 min and 168 h; (v) blood density adjustments. The standard sources were measured in the secondary standard ionization chamber Centronics IG11 at the Laboratorio Nacional de Metrologia das Radiacoes Ionizantes. The Capintec ionization chamber efficiencies ranged, respectively for I-131 and Lu-177, between (111.58±0.02)% and (102.27±0.01)% and HPGe semiconductor detector efficiencies ranged, respectively, between (89.40±0.03)% and (87.80±0.04)%. For the NaI detector, when the Lu-177 sources were positioned inside the detector the efficiencies ranged between (12.66±0.01)% and (11.54± 0.07)% and when the sources were positioned at 5 cm and 10 cm from the detector the efficiencies decreased to less than 5%. For I-131 sources positioned inside the detector, the efficiencies ranged between (29.76±0.21)% and (30.20±0.04)% and they decreased to less than 5% when they were positioned at 5 cm and 10 cm from the detector (deviation greater than 95

  11. Implementation of Surface Detector Option in SCALE SAS4 Shielding Module

    International Nuclear Information System (INIS)

    Broadhead, B.L.; Emmett, M.B.; Tang, J.S.

    1999-01-01

    The Shielding Analysis Sequence No. 4 (SAS4) in the Standardized Cask Analysis and Licensing Evaluation System (SCALE) is designed to aid the novice user in the preparation of detailed three-dimensional models and radiation protection studies of transportation or storage packages containing spent fuel from a nuclear reactor facility. The underlying methodology in these analyses is the Monte Carlo particle-tracking approach as incorporated into the MORSE-SGC computer code. The use of these basic procedures is enhanced via the automatic generation of the biasing parameters in the SAS4 sequence, which dramatically increases the calculational efficiency of most standard shielding problems. Until recently the primary mechanism for dose estimates in SAS4 was the use of point detectors, which were effective for single-dose locations, but inefficient for quantification of dose-rate profiles. This paper describes the implementation of a new surface detector option for SAS4 with automatic discretization of the detector surface into multiple segments or subdetectors. Results from several sample problems are given and discussed

  12. Bidirectional electroluminescence from p-SnO{sub 2}/i-MgZnO/n-ZnO heterojunction light-emitting diodes

    Energy Technology Data Exchange (ETDEWEB)

    Yang, Yanqin [School of Electronic and Electrical Engineering, Hubei Collaborative Innovation Center of Textile Industrial Chain Generic Technology, Wuhan Textile University, Wuhan 430073 (China); Li, Songzhan, E-mail: liszhan@whu.edu.cn [School of Electronic and Electrical Engineering, Hubei Collaborative Innovation Center of Textile Industrial Chain Generic Technology, Wuhan Textile University, Wuhan 430073 (China); Key Lab of Artificial Micro- and Nano-Structures of Ministry of Education of China, School of Physics and Technology, Wuhan University, Wuhan 430072 (China); Liu, Feng; Zhang, Nangang; Liu, Kan [School of Electronic and Electrical Engineering, Hubei Collaborative Innovation Center of Textile Industrial Chain Generic Technology, Wuhan Textile University, Wuhan 430073 (China); Wang, Shengxiang, E-mail: sxwang@wtu.edu.cn [School of Electronic and Electrical Engineering, Hubei Collaborative Innovation Center of Textile Industrial Chain Generic Technology, Wuhan Textile University, Wuhan 430073 (China); Fang, Guojia [Key Lab of Artificial Micro- and Nano-Structures of Ministry of Education of China, School of Physics and Technology, Wuhan University, Wuhan 430072 (China)

    2017-06-15

    Light-emitting diodes based on p-SnO{sub 2}/i-MgZnO/n-ZnO heterojunction have been fabricated. The material properties and the performance of heterojunction device are characterized. Current-voltage characteristics of the device show a diode-like rectifying behavior. Under forward bias, two prominent emission peaks located at 589 nm and 722 nm in the visible region and a weak ultraviolet emission are observed from p-SnO{sub 2}/i-MgZnO/n-ZnO heterojunction device. As the device is under reverse bias, a broad visible emission band dominates the electroluminescence spectrum at a high current. Furthermore, the emission mechanism has been discussed in terms of energy band structures of the device under forward and reverse biases.

  13. Characterization of proton and neutron irradiated low resistivity p-on-n magnetic Czochralski ministrip sensors and diodes

    International Nuclear Information System (INIS)

    Pacifico, Nicola; Dolenc Kittelmann, Irena; Fahrer, Manuel; Moll, Michael; Militaru, Otilia

    2011-01-01

    Transient Current Technique (TCT) and Charge Collection Efficiency (CCE) measurements were performed on low resistivity (280Ωcm) n-bulk, p-readout magnetic Czochralski ministrip sensors and diodes. The detectors were irradiated with neutrons and 24 GeV/c protons up to a total NIEL equivalent fluence of 8×10 15 /cm 2 . The study was addressed to assess the radiation tolerance of the detectors up to fluences expected in the next generations of High Energy Physics experiments. The charge collection efficiency after irradiation was found to be much higher than for standard FZ silicon p-in-n sensors. The underlying physics of this remarkable result was investigated by performing Edge-TCT measurements on one of the neutron irradiated ministrip sensors to extract detailed informations about the field and efficiency profiles of the detector.

  14. Analysis of HgI2 and PbI2 crystals and detectors by particle-induced x-ray emission (PIXE) and ion backscattering spectroscopy (IBS)

    International Nuclear Information System (INIS)

    Bench, G.S.; Heikkinen, D.W.; Antolak, A.J.; Morse, D.H.; Pontau, A.E.; James, R.B.; David, D.C.; Burger, A.; Van Den Berg, L.

    1993-03-01

    The Ion Micro-Analysis Group (IMAG) in Livermore conducts quantitative trace elemental analysis with PIXE and depth profiling with IBS using an MeV ion microbeam. The system has the capability to produce two-dimensional trace element and IBS images. PIXE analyses have been conducted on HgI 2 and PbI 2 crystals and detector materials in order to identify and quantify near surface trace contaminants. IBS measurements have been conducted to investigate elemental depth distributions in various materials. The results of measurements on several different samples are reported and a discussion of factors affecting quantitative in vacuo microanalysis of these materials is presented

  15. A first-principles study of the SCN− chemisorption on the surface of AlN, AlP, and BP nanotubes

    International Nuclear Information System (INIS)

    Soltani, Alireza; Taghartapeh, Mohammad Ramezani; Mighani, Hossein; Pahlevani, Amin Allah; Mashkoor, Reza

    2012-01-01

    Graphical abstract: Adsorption properties of SCN − on AlN, AlP, and BP nanotubes based on density functional theory. ▶ We demonstrate the most stable configurations (N-side) of SCN − on AlN, AlP, and BP nanotubes models. Highlights: ► The SCN − Adsorption on surface of AlN, AlP, and BP nanotubes were studied via density functional theory (DFT). ► The interaction of SCN − on the electronic properties and the NBO charge distribution of mentioned configurations are investigated. ► The studies suggest that the adsorption energies of SCN − on AlPNT is most notable in comparison with AlNNT and BPNT. - Abstract: We have performed first-principles calculations to explore the adsorption behavior of the SCN − on electronic properties of AlN, AlP, and BP nanotubes. The adsorption value of SCN − for the most stable formation on the AlPNT is about −318.16 kJ mol −1 , which is reason via the chemisorptions of SCN anion. The computed density of states (DOS) indicates that a notable orbital hybridization take place between SCN − and AlP nanotube in adsorption process. Finally, the AlP nanotube can be used to design as useful sensor for nanodevice applications.

  16. New results on silicon microstrip detectors of CMS tracker

    International Nuclear Information System (INIS)

    Demaria, N.; Albergo, S.; Angarano, M.; Azzi, P.; Babucci, E.; Bacchetta, N.; Bader, A.; Bagliesi, G.; Basti, A.; Biggeri, U.; Bilei, G.M.; Bisello, D.; Boemi, D.; Bolla, G.; Bosi, F.; Borrello, L.; Bortoletto, D.; Bozzi, C.; Braibant, S.; Breuker, H.; Bruzzi, M.; Buffini, A.; Busoni, S.; Candelori, A.; Caner, A.; Castaldi, R.; Castro, A.; Catacchini, E.; Checcucci, B.; Ciampolini, P.; Civinini, C.; Creanza, D.; D'Alessandro, R.; Da Rold, M.; De Palma, M.; Dell'Orso, R.; Marina, R. Della; Dutta, S.; Eklund, C.; Elliott-Peisert, A.; Favro, G.; Feld, L.; Fiore, L.; Focardi, E.; French, M.; Freudenreich, K.; Fuertjes, A.; Giassi, A.; Giorgi, M.; Giraldo, A.; Glessing, B.; Gu, W.H.; Hall, G.; Hammerstrom, R.; Hebbeker, T.; Hrubec, J.; Huhtinen, M.; Kaminsky, A.; Karimaki, V.; Koenig, St.; Krammer, M.; Lariccia, P.; Lenzi, M.; Loreti, M.; Luebelsmeyer, K.; Lustermann, W.; Maettig, P.; Maggi, G.; Mannelli, M.; Mantovani, G.; Marchioro, A.; Mariotti, C.; Martignon, G.; Evoy, B. Mc; Meschini, M.; Messineo, A.; Migliore, E.; My, S.; Paccagnella, A.; Palla, F.; Pandoulas, D.; Papi, A.; Parrini, G.; Passeri, D.; Pieri, M.; Piperov, S.; Potenza, R.; Radicci, V.; Raffaelli, F.; Raymond, M.; Santocchia, A.; Schmitt, B.; Selvaggi, G.; Servoli, L.; Sguazzoni, G.; Siedling, R.; Silvestris, L.; Skog, K.; Starodumov, A.; Stavitski, I.; Stefanini, G.; Tempesta, P.; Tonelli, G.; Tricomi, A.; Tuuva, T.; Vannini, C.; Verdini, P.G.; Viertel, G.; Xie, Z.; Li Yahong; Watts, S.; Wittmer, B.

    2000-01-01

    Interstrip and backplane capacitances on silicon microstrip detectors with p + strip on n substrate of 320 μm thickness were measured for pitches between 60 and 240 μm and width over pitch ratios between 0.13 and 0.5. Parametrisations of capacitance w.r.t. pitch and width were compared with data. The detectors were measured before and after being irradiated to a fluence of 4x10 14 protons/cm 2 of 24 GeV/c momentum. The effect of the crystal orientation of the silicon has been found to have a relevant influence on the surface radiation damage, favouring the choice of a substrate. Working at high bias (up to 500 V in CMS) might be critical for the stability of detector, for a small width over pitch ratio. The influence found to enhance the stability

  17. Radiation emitter-detector package

    International Nuclear Information System (INIS)

    O'Brien, J.T.; Limm, A.C.; Nyul, P.; Tassia, V.S. Jr.

    1978-01-01

    Mounted on the metallic base of a radiation emitter-detector is a mounting block is a first projection, and a second projection. A radiation detector is on the first projection and a semiconductor electroluminescent device, i.e., a radiation emitter, is on the second projection such that the plane of the recombination region of the electroluminescent device is perpendicular to the radiation incident surface of the radiation detector. The electroluminescent device has a primary emission and a secondary emission in a direction different from the primary emission. A radiation emitter-detector package as described is ideally suited to those applications wherein the secondary radiation of the electroluminescent device is fed into a feedback circuit regulating the biasing current of the electroluminescent device

  18. THE COSMIC-RAY ENERGY SPECTRUM OBSERVED WITH THE SURFACE DETECTOR OF THE TELESCOPE ARRAY EXPERIMENT

    Energy Technology Data Exchange (ETDEWEB)

    Abu-Zayyad, T.; Allen, M.; Anderson, R.; Barcikowski, E.; Belz, J. W.; Bergman, D. R.; Blake, S. A.; Cady, R.; Hanlon, W. [High Energy Astrophysics Institute and Department of Physics and Astronomy, University of Utah, Salt Lake City, Utah (United States); Aida, R. [University of Yamanashi, Interdisciplinary Graduate School of Medicine and Engineering, Kofu, Yamanashi (Japan); Azuma, R.; Fukuda, T. [Graduate School of Science and Engineering, Tokyo Institute of Technology, Meguro, Tokyo (Japan); Cheon, B. G.; Cho, E. J. [Department of Physics and Research Institute of Natural Science, Hanyang University, Seongdong-gu, Seoul (Korea, Republic of); Chiba, J. [Department of Physics, Tokyo University of Science, Noda, Chiba (Japan); Chikawa, M. [Department of Physics, Kinki University, Higashi Osaka, Osaka (Japan); Cho, W. R. [Department of Physics, Yonsei University, Seodaemun-gu, Seoul (Korea, Republic of); Fujii, H. [Institute of Particle and Nuclear Studies, KEK, Tsukuba, Ibaraki (Japan); Fujii, T. [Graduate School of Science, Osaka City University, Osaka, Osaka (Japan); Fukushima, M. [Institute for Cosmic Ray Research, University of Tokyo, Kashiwa, Chiba (Japan); and others

    2013-05-01

    The Telescope Array (TA) collaboration has measured the energy spectrum of ultra-high energy cosmic rays (UHECRs) with primary energies above 1.6 Multiplication-Sign 10{sup 18} eV. This measurement is based upon four years of observation by the surface detector component of TA. The spectrum shows a dip at an energy of 4.6 Multiplication-Sign 10{sup 18} eV and a steepening at 5.4 Multiplication-Sign 10{sup 19} eV which is consistent with the expectation from the GZK cutoff. We present the results of a technique, new to the analysis of UHECR surface detector data, that involves generating a complete simulation of UHECRs striking the TA surface detector. The procedure starts with shower simulations using the CORSIKA Monte Carlo program where we have solved the problems caused by use of the ''thinning'' approximation. This simulation method allows us to make an accurate calculation of the acceptance of the detector for the energies concerned.

  19. Local pH at the surface of hen egg white lysozyme

    Science.gov (United States)

    Otosu, Takuhiro; Kobayashi, Kaito; Yamaguchi, Shoichi

    2018-02-01

    The microenvironment at the surface of hen-egg-white lysozyme (HEWL) was examined by analyzing the change in pKa of fluorescein isothiocyanate (FITC) upon binding to the N-terminus of HEWL. The result showed that the local pH at the HEWL surface is higher than the bulk pH. Furthermore, the data showed that the difference between the local and bulk pH becomes larger with decreasing pH, suggesting HEWL repels more protons at lower pH. Because the local pH affects the protonation states of functional amino-acids at the protein surface, the results provide the fundamental insight into the microenvironment at the protein surface.

  20. Evaluation of Some (n,n'), (n,γ), (n,p), (n,2n) and (n,3n) Reaction Excitation Functions for Fission and Fusion Reactor Dosimetry Applications; Evaluation of the Excitation Functions for the 54Fe(n,p)54Mn, 58Ni(n,2n)57Ni, 67Zn(n,p)67Cu, 92Mo(n,p)92mNb, 93Nb(n,γ)94Nb, 113In(n,n')113mIn, 115In(n,γ) 116mIn, and 169Tm(n,3n)167Tm Reactions. Progress Report on Research Contract No 16242

    International Nuclear Information System (INIS)

    Zolotarev, K.I.; Zolotarev, P.K.

    2013-12-01

    Cross section data for the 54 Fe(n,p) 54 Mn, 58 Ni(n,2n) 57 Ni, 67 Zn(n,p) 67 Cu, 92 Mo(n,p) 92m Nb, 93 Nb(n,γ) 94 Nb, 113 In(n,n') 113m In, 115 In(n,γ) 116m In, 169 Tm(n,3n) 167 Tm reactions are needed to solve a wide spectrum of scientific and technical tasks. Activation detectors based on these reactions may be used in the field of reactor dosimetry. Furthermore, the 54 Fe(n,p) 54 Mn reaction is often used in experimental nuclear physics as a monitor reaction for measurements of unknown cross sections by means of the activation method over the neutron energy range from 5 to 15 MeV. The 93 Nb(n,γ) 94 Nb reaction is also very promising for using in retrospective neutron dosimetry for determination of total neutron fluence during a campaign of a reactor. In the existing version of the International Reactor Dosimetry File and the new extended version named as IRDFF data for excitation functions of 67 Zn(n,p) 67 Cu, 92 Mo(n,p) 92m Nb, 113 In(n,n') 113m In, and 169 Tm(n,3n) 167 Tm reactions are absent. Data for these reactions are also absent in the JENDL/D-99 dosimetry file. Excitation functions of 67 Zn(n,p) 67 Cu and 169 Tm(n,3n) 167 Tm are presented in the TENDL-2012, EAF-2010, JENDL-4.0, JEFF-3.1/A, MENDL-2 libraries. Cross section data for the 67 Zn(n,p) 67 Cu reaction up to 20 MeV are given also in the JENDL/HE-2007 library. Excitation functions of the 92 Mo(n,p) 92m Nb and 113 In(n,n') 113m In reactions are evaluated in the EAF-2010 and JEFF-3.1/A libraries. Cross section data for the 113 In(n,n') 113m In reaction are given also in the TENDL-2010 library. It is necessary to note that neutron data in the JEFF-3.1/A and JENDL-4.0 libraries were evaluated up to 20 MeV. Neutron data in the TENDL-2012, EAF-2010, MENDL-2 and TENDL-2010 libraries had been evaluated up to 30 MeV, 60 MeV, 100 MeV and 200 MeV, respectively. Neutron cross sections in the MENDL-2, TENDL-2010 and TENDL-2012 libraries had been obtained on the basis of pure theoretical model calculations

  1. New thermal neutron solid-state electronic detector based on HgI2 crystals

    International Nuclear Information System (INIS)

    Melamud, M.; Burshtein, Z.

    1983-07-01

    We describe the development of a new solid-state electronic neutron detector, based on HgI 2 single crystals. Incident neutrons are absorbed in high neutron absorbing foils, such as cadmium or gadolinium, which are placed in front of a HgI 2 detector. Gamma rays, emitted as a result of the neutron absorbtion, are then absorbed in the HgI 2 , generating free charge carriers, which are collected by the electric field. The advantage of this system lies in it's manufacturing simplicity, low weight and small physical dimensions, compared to gas-filled conventional neutron detectors. The disadvantage is that the system does not discriminate between gamma rays and neutrons. A method to minimize this disadvantage is pointed out. It is as well possible to count neutrons by direct exposure of the HgI 2 to neutrons. The neutron-to-gamma transformation in that case takes place by the material nuclei themselves. This method, however, is impractical due to the interference of delayed radioactivity whose origin are 129 I nuclei. They are generated from 128 I by absorbing a neutron, and decay with a 25 min half lifetime involving gamma emissions. (author)

  2. Extraction of minority carrier diffusion length of MWIR Type-II superlattice nBp detector

    Science.gov (United States)

    Taghipour, Zahra; Kazemi, Alireza; Myers, Stephen; Wijewarnasuriya, Priyalal; Mathews, Sen; Steenbergen, Elizabeth H.; Morath, Christian; Cowan, Vincent M.; Ariyawansa, Gamini; Scheihing, John; Krishna, Sanjay

    2017-08-01

    We present a model for the spectral external quantum efficiency (EQE) to extract the minority carrier diffusion length (Ln) of a unipolar nBp InAs/GaSb Type-II superlattice (T2SL) mid-wave infrared (MWIR) detector. The detector consists of a 4 μm thick p-doped 10ML InAs/10ML GaSb SL absorber with a 50% cut-off wavelength of 5 μm at 80 K and zero bias. The n-type doped InAs/AlSb SL barrier in the structure was included to reduce the GR dark current. By fitting the experimentally measured EQE data to the theoretically calculated QE based on the solution of the drift-diffusion equation, the p-type absorber was found the have Ln = 10 +/- 0.5 μm at 80K, and Ln = 12 +/- 0.5 μm at 120K and 150K. We performed the absorption coefficient measurement at different temperatures of interest. Also, we estimated the reduced background concentration and the built-in potential by utilizing a capacitance-voltage measurement technique. We used time-resolved-photoluminescence (TRPL) to determine the lifetime at 80K. With the result of the model and the lifetime measurement, we calculated the diffusion coefficient and the mobility in the T2SL detector at various temperatures. Also, we studied the behavior of different dark current mechanisms by fitting the experimentally measured and simulated dark current density under different operating temperatures and biases.

  3. Criterios para la liberación de <i>Phytoseiulus persimilisi> Athias Henriot (Parasitiformes: Phytoseiidae en cultivo de rosa

    Directory of Open Access Journals (Sweden)

    Hilarión Alejandra

    2008-04-01

    Full Text Available <p align="justify"> <i>Phytoseiulus persimilisi> ha sido utilizado en programas de manejo integrado de plagas como alternativa al uso de acaricidas para el manejo de <i>Tetranychus urticaei>. Los daños ocasionados por <i>T. urticaei> generan un costo de manejo cercano a los 4.500 dólares por hectárea, esta cifra corresponde aproximadamente al 30% del costo de los plaguicidas (Ceniflores, 2008. La implementación de esta estrategia de manejo debe considerar criterios de liberación basados en los niveles de población de <i>T. urticaei> del cultivo, estimados a partir de una metodología de muestreo apropiada. En el presente trabajo, se propuso una metodología para estimar el nivel de infestación de <i>T. urticaei>, para conocer la cantidad de <i>P. persimilisi> a liberar en el cultivo de rosa y se evaluó la efectividad del control ejercido por <i>P. persimilisi>. En el área experimental se tomaron 81 cuadros, en cada uno de ellos se muestrearon al azar tres plantas de rosa y se contó el número de individuos en tres hojas de cada tercio de la planta. Así mismo, se determinó el número óptimo de muestras para un muestreo bietápico. Se tuvo en cuenta la respuesta funcional como criterio de liberación de <i>P. persimilisi>. La población de <i>T. urticaei> estimada después de la liberación se dividió entre la población previa a la liberación para obtener un índice de control, el cual se comparó entre las estrategias de manejo. Con el control biológico se obtuvo una mayor reducción de la población de la plaga y una menor fluctuación de esta a través del tiempo.p>

  4. Kriitikat pälvinud EL nõus langetama põllumajandustolle / Krister Paris

    Index Scriptorium Estoniae

    Paris, Krister, 1977-

    2005-01-01

    EL-i kaubandusvolinik Peter Mandelson pakkus EL-i kaubanduspartneritele, et EL kärbib tariife keskmiselt 46% võrra. Prantsusmaa on EL-i põllumajandustollide vähendamise vastu. USA tahab, et EL vähendaks oma tariife 55-90%. Lisa: WTO nõuab EL-ilt suhkrureformi

  5. InGaN/GaN core/shell nanowires for visible to ultraviolet range photodetection

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, Hezhi; Lavenus, Pierre; Julien, Francois H.; Tchernycheva, Maria [Institut d' Electronique Fondamentale, UMR CNRS 8622, Universite Paris Sud 11, 91405, Orsay (France); Messanvi, Agnes [Institut d' Electronique Fondamentale, UMR CNRS 8622, Universite Paris Sud 11, 91405, Orsay (France); Universite Grenoble Alpes, 38000, Grenoble (France); CEA, INAC-SP2M, ' ' Nanophysique et semiconducteurs' ' Group, 38000, Grenoble (France); Durand, Christophe; Eymery, Joel [Universite Grenoble Alpes, 38000, Grenoble (France); CEA, INAC-SP2M, ' ' Nanophysique et semiconducteurs' ' Group, 38000, Grenoble (France); Babichev, Andrey [ITMO University, 197101, St. Petersburg (Russian Federation); Ioffe Institute, Polytekhnicheskaya 26, 194021, St. Petersburg (Russian Federation)

    2016-04-15

    We report on the fabrication and characterization of single nitride nanowire visible-to-ultraviolet p-n photodetectors. Nitride nanowires containing 30 InGaN/GaN radial quantum wells with 18% indium fraction were grown by catalyst-free metal-organic vapour phase epitaxy. Single nanowires were contacted using optical lithography. As expected for a radial p-n junction, the current-voltage (I-V) curves of single wire detectors show a rectifying behavior in the dark and a photocurrent under illumination. The detectors present a response in the visible to UV spectral range starting from 2.8 eV. The peak responsivity is 0.17 A/W at 3.36 eV. The on-off switching time under square light pulses is found to be below 0.1 s. (copyright 2016 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  6. Yeast Ivy1p Is a Putative I-BAR-domain Protein with pH-sensitive Filament Forming Ability in vitro.

    Science.gov (United States)

    Itoh, Yuzuru; Kida, Kazuki; Hanawa-Suetsugu, Kyoko; Suetsugu, Shiro

    2016-01-01

    Bin-Amphiphysin-Rvs161/167 (BAR) domains mold lipid bilayer membranes into tubules, by forming a spiral polymer on the membrane. Most BAR domains are thought to be involved in forming membrane invaginations through their concave membrane binding surfaces, whereas some members have convex membrane binding surfaces, and thereby mold membranes into protrusions. The BAR domains with a convex surface form a subtype called the inverse BAR (I-BAR) domain or IRSp53-MIM-homology domain (IMD). Although the mammalian I-BAR domains have been studied, those from other organisms remain elusive. Here, we found putative I-BAR domains in Fungi and animal-like unicellular organisms. The fungal protein containing the putative I-BAR-domain is known as Ivy1p in yeast, and is reportedly localized in the vacuole. The phylogenetic analysis of the I-BAR domains revealed that the fungal I-BAR-domain containing proteins comprise a distinct group from those containing IRSp53 or MIM. Importantly, Ivy1p formed a polymer with a diameter of approximately 20 nm in vitro, without a lipid membrane. The filaments were formed at neutral pH, but disassembled when pH was reverted to basic. Moreover, Ivy1p and the I-BAR domain expressed in mammalian HeLa cells was localized at a vacuole-like structure as filaments as revealed by super-resolved microscopy. These data indicate the pH-sensitive polymer forming ability and the functional conservation of Ivy1p in eukaryotic cells.

  7. Di-electron spectroscopy in HADES and CBM. From p+p and n+p collisions at GSI to Au+Au collisions at FAIR

    International Nuclear Information System (INIS)

    Galatyuk, Tetyana

    2009-01-01

    In this work the di-electron production in p+p and d+p reactions at a kinetic beam energy of 1.25 GeV/u measured by the HADES spectrometer is discussed. At E kin =1.25 GeV/u, i.e. below the η meson production threshold in proton-proton reactions, the Δ Dalitz decay is expected to be the most abundant source above the π 0 Dalitz decay region. The observed large difference in di-electron production in p+p and d+p collisions suggests that di-electron production in the d+p system is dominated by the n+p interaction. In order to separate Δ Dalitz decays and np bremsstrahlung the di-electron yield observed in p+p and n+p reactions, both measured at the same beam energy, has been compared. The main interest here is the investigation of iso-spin effects in baryonic resonance excitations and the off-shell production of vector mesons. We indeed observe a large difference in di-electron production in p+p and n+p reactions. Results of these studies will be compared to recent calculations. We will also present our experimentally defined cocktail for heavy-ion data. A strong excess of lepton pairs observed by recent high energy heavy-ion dilepton experiments hint to a strong influence of baryons, however no data exist at highly compressed baryonic matter, achievable in heavy-ion collisions from 8.45 GeV/u beam energy. These conditions would allow to study the expected restoration of chiral symmetry by measuring in-medium modifications of hadronic properties, an experimental program which is foreseen by the future CBM experiment at FAIR. The experimental challenge is to suppress the large physical background on the one hand and to provide a clean identification of electrons on the other hand. In this work, strategies to reduce the combinatorial background in electron pair measurements with the CBM detector are discussed. The main goal is to study the feasibility of effectively reducing combinatorial background with the currently foreseen experimental setup, which does not

  8. Di-electron spectroscopy in HADES and CBM. From p+p and n+p collisions at GSI to Au+Au collisions at FAIR

    Energy Technology Data Exchange (ETDEWEB)

    Galatyuk, Tetyana

    2009-07-17

    In this work the di-electron production in p+p and d+p reactions at a kinetic beam energy of 1.25 GeV/u measured by the HADES spectrometer is discussed. At E{sub kin}=1.25 GeV/u, i.e. below the {eta} meson production threshold in proton-proton reactions, the {delta} Dalitz decay is expected to be the most abundant source above the {pi}{sup 0} Dalitz decay region. The observed large difference in di-electron production in p+p and d+p collisions suggests that di-electron production in the d+p system is dominated by the n+p interaction. In order to separate {delta} Dalitz decays and np bremsstrahlung the di-electron yield observed in p+p and n+p reactions, both measured at the same beam energy, has been compared. The main interest here is the investigation of iso-spin effects in baryonic resonance excitations and the off-shell production of vector mesons. We indeed observe a large difference in di-electron production in p+p and n+p reactions. Results of these studies will be compared to recent calculations. We will also present our experimentally defined cocktail for heavy-ion data. A strong excess of lepton pairs observed by recent high energy heavy-ion dilepton experiments hint to a strong influence of baryons, however no data exist at highly compressed baryonic matter, achievable in heavy-ion collisions from 8.45 GeV/u beam energy. These conditions would allow to study the expected restoration of chiral symmetry by measuring in-medium modifications of hadronic properties, an experimental program which is foreseen by the future CBM experiment at FAIR. The experimental challenge is to suppress the large physical background on the one hand and to provide a clean identification of electrons on the other hand. In this work, strategies to reduce the combinatorial background in electron pair measurements with the CBM detector are discussed. The main goal is to study the feasibility of effectively reducing combinatorial background with the currently foreseen experimental

  9. Application of a-Si:H radiation detectors in medical imaging

    International Nuclear Information System (INIS)

    Lee, Hyoung-Koo.

    1995-06-01

    Monte Carlo simulations of a proposed a-Si:H-based current-integrating gamma camera were performed. The analysis showed that the intrinsic resolution of such a camera was 1 ∼ 2.5 mm, which is somewhat better than that of a conventional gamma camera, and that the greater blurring, due to the detection of scattered γ-rays, could be reduced considerably by image restoration techniques. This proposed gamma camera would be useful for imaging shallow organs such as the thyroid. Prototype charge-storage a-Si:H pixel detectors for such a camera were designed, constructed and tested. The detectors could store signal charge as long as 5 min at -26C. The thermal generation current in reverse biased a-Si:H p-i-n photodetectors was investigated, and the Poole-Frenkel effect was found to be the most significant source of the thermal generation current. Based on the Poole-Frenkel effect, voltage- and time-dependent thermal generation current was modeled. Using the model, the operating conditions of the proposed a-Si:H gamma camera, such as the operating temperature, the operating bias and the γ-scan period, could be predicted. The transient photoconductive gain mechanism in various a-Si:H devices was investigated for applications in digital radiography. Using the a-Si:H photoconductors in n-i-n configuration in pixel arrays, enhancement in signal collection (more than 200 times higher signal level) can be achieved in digital radiography, compared to the ordinary p-i-n type a-Si:H x-ray imaging arrays

  10. Measurement of the 234U(n, f ) cross-section with quasi-monoenergetic beams in the keV and MeV range using a Micromegas detector assembly

    Science.gov (United States)

    Stamatopoulos, A.; Kanellakopoulos, A.; Kalamara, A.; Diakaki, M.; Tsinganis, A.; Kokkoris, M.; Michalopoulou, V.; Axiotis, M.; Lagoyiannis, A.; Vlastou, R.

    2018-01-01

    The 234U neutron-induced fission cross-section has been measured at incident neutron energies of 452, 550, 651 keV and 7.5, 8.7, 10 MeV using the 7Li ( p, n) and the 2H( d, n) reactions, respectively, relative to the 235U( n, f ) and 238U( n, f ) reference reactions. The measurement was performed at the neutron beam facility of the National Center for Scientific Research "Demokritos", using a set-up based on Micromegas detectors. The active mass of the actinide samples and the corresponding impurities were determined via α-spectroscopy using a surface barrier silicon detector. The neutron spectra intercepted by the actinide samples have been thoroughly studied by coupling the NeuSDesc and MCNP5 codes, taking into account the energy and angular straggling of the primary ion beams in the neutron source targets in addition to contributions from competing reactions ( e.g. deuteron break-up) and neutron scattering in the surrounding materials. Auxiliary Monte Carlo simulations were performed making combined use of the FLUKA and GEF codes, focusing particularly on the determination of the fission fragment detection efficiency. The developed methodology and the final results are presented.

  11. Evaluation of SPECT with N-isopropyl[I-123]-p-iodoamphetamine (IMP) in epileptic patients

    International Nuclear Information System (INIS)

    Nambu, Toshikazu; Itoh, Kazuo; Sumi, Tetsuo; Furudate, Masayori; Irie, Goro

    1988-01-01

    Brain SPECT scintigrams with N-Isopropyl[I-123]-p-Iodoamphetamine (IMP) were reviewed and compared with the EEG findings in 21 epileptic patients (22 SPECT images) with normal CT. Thirteen of 22 SPECT images showed abnormal low uptake and 7 of them corresponded to the EEG focus. In order to obtain the quantitative analysis, the count ratio of the focus side to the opposite I-123 content in fixed ROI was measured for each case, but no statistically significant correlation for the frequency or the duration of epilepsy was found. EEG is not considered to be favorite standard for localizing epileptic foci, especially in deep cerebral region, and that may be one of the main reason for the incomplete correlation. In the qualitative study, however, the cases with frequent epileptic attack were more likely to show abnormal findings. I-123 IMP SPECT can now be considered as having a significant clinical role for the diagnosis and management of patients with epilepsy. (author)

  12. Design and performance of a modularized NaI(Tl) detector (the crystal ball prototype)

    International Nuclear Information System (INIS)

    Chan, Y.; Partridge, R.A.; Peck, C.W.

    1977-01-01

    A prototype NaI(Tl) detector (the Cluster of 54) of spherical geometry subtending a solid angle of 7.5 percent of 4π at its center, has recently been assembled and tested. This detector consisted of 54 close-packed but optically isolated NaI(Tl) modules and the associated electronic circuitry. The Cluster of 54 is the predecessor of an almost complete spherical detector, the Crystal Ball, which will cover 94 percent of 4π. The latter detector is now under construction and is especially designed for the study of γ-rays produced in electron-positron collisions at colliding beam facilities. The mechanical, optical, and electronic assembly of the prototype system is outlined. Cluster of 54 test data will be presented

  13. Aktiv løn i danske virksomheder

    DEFF Research Database (Denmark)

    Scheuer, Steen

    Formålet med artiklen er at belyse udbredelsen af årsbonus som incitamentløn blandt danske lønmodtagere i den private sektor samt især at belyse nogle effekter af årsbonus på oplevet fairness, på tilfredshed med løn og job og på selvrapporteret arbejdstid. Som forskningsdesign er valgt en stor kv...

  14. A VLSI System-on-Chip for Particle Detectors

    CERN Document Server

    AUTHOR|(CDS)2078019

    In this thesis I present a System-on-Chip (SoC) I designed to oer a self- contained, compact data acquisition platform for micromegas detector mon- itoring. I carried on my work within the RD-51 collab oration of CERN. With a companion ADC, my architecture is capable to acquire the signal from a detector electro de, pro cess the data and p erform monitoring tests. The SoC is built around on a custom 8-bit micropro cessor with internal mem- ory resources and emb eds the p eripherals to b e interf...

  15. New design of N-isopropyl-p-[123I]iodoamphetamine (123I-IMP) lung imaging in the patient with lung cancer

    International Nuclear Information System (INIS)

    Tanaka, Eiko; Mishima, Michiaki; Kawakami, Kenzo; Sakai, Naoki; Sugiura, Naoharu; Ohi, Motoharu; Kuno, Kenshi; Taniguchi, Takashi; Itoh, Harumi.

    1995-01-01

    N-isopropyl-p-[ 123 I]iodoamphetamine ( 123 I-IMP) was injected intravenously into primary non small cell lung carcinoma patients (n=17). The average pixel count ratios of the cancerous area to the whole lung was measured in the initial and delayed images. In the initial image, this ratio was less than 1.0 for the entire group of patients, and was thought to reflect decreased blood flow in the cancerous tissues. The rate of counts within a ROI in the delayed image to counts in the same ROI in the initial image was also calculated and called the remain rate. The remain rate (delayed count/initial count) was significantly higher in the cancerous area than in the whole lung (0.65±0.30, median 0.62, 0.38±0.05, median 0.38, p<0.01). This observation was thought to be due to a relative decrease in the blood flow and the accumulation of IMP, which forms pools within the alveolar spaces of the cancerous areas. The image prepared with the remain rate revealed a hot image in the cancerous regions, even when this was not apparent in the delayed image. The remain rate image may therefore be useful in the identification of cancerous areas in lung tissue if it is used in comparison with the initial image. (author)

  16. Highly transparent front electrodes with metal fingers for p-i-n thin-film silicon solar cells

    Directory of Open Access Journals (Sweden)

    Moulin Etienne

    2015-01-01

    Full Text Available The optical and electrical properties of transparent conductive oxides (TCOs, traditionally used in thin-film silicon (TF-Si solar cells as front-electrode materials, are interlinked, such that an increase in TCO transparency is generally achieved at the cost of reduced lateral conductance. Combining a highly transparent TCO front electrode of moderate conductance with metal fingers to support charge collection is a well-established technique in wafer-based technologies or for TF-Si solar cells in the substrate (n-i-p configuration. Here, we extend this concept to TF-Si solar cells in the superstrate (p-i-n configuration. The metal fingers are used in conjunction with a millimeter-scale textured foil, attached to the glass superstrate, which provides an antireflective and retroreflective effect; the latter effect mitigates the shadowing losses induced by the metal fingers. As a result, a substantial increase in power conversion efficiency, from 8.7% to 9.1%, is achieved for 1-μm-thick microcrystalline silicon solar cells deposited on a highly transparent thermally treated aluminum-doped zinc oxide layer combined with silver fingers, compared to cells deposited on a state-of-the-art zinc oxide layer.

  17. Summary of theoretical and experimental investigation of grating type, silicon photovoltaic cells. [using p-n junctions on light receiving surface of base crystal

    Science.gov (United States)

    Chen, L. Y.; Loferski, J. J.

    1975-01-01

    Theoretical and experimental aspects are summarized for single crystal, silicon photovoltaic devices made by forming a grating pattern of p/n junctions on the light receiving surface of the base crystal. Based on the general semiconductor equations, a mathematical description is presented for the photovoltaic properties of such grating-like structures in a two dimensional form. The resulting second order elliptical equation is solved by computer modeling to give solutions for various, reasonable, initial values of bulk resistivity, excess carrier concentration, and surface recombination velocity. The validity of the computer model is established by comparison with p/n devices produced by alloying an aluminum grating pattern into the surface of n-type silicon wafers. Current voltage characteristics and spectral response curves are presented for cells of this type constructed on wafers of different resistivities and orientations.

  18. Distribution of {sup 129}I in terrestrial surface water environments

    Energy Technology Data Exchange (ETDEWEB)

    Chen, Xuegao [State Key Laboratory of Hydrology-Water Resources and Hydraulic Engineering, Hohai University, Nanjing 210098 (China); College of Hydrology and Water Resources, Hohai University, Nanjing (China); Gong, Meng [College of Hydrology and Water Resources, Hohai University, Nanjing (China); Yi, Peng, E-mail: pengyi1915@163.com [State Key Laboratory of Hydrology-Water Resources and Hydraulic Engineering, Hohai University, Nanjing 210098 (China); College of Hydrology and Water Resources, Hohai University, Nanjing (China); Aldahan, Ala [Department of Earth Sciences, Uppsala University, Uppsala (Sweden); Department of Geology, United Arab Emirates University, Al Ain (United Arab Emirates); Yu, Zhongbo [State Key Laboratory of Hydrology-Water Resources and Hydraulic Engineering, Hohai University, Nanjing 210098 (China); College of Hydrology and Water Resources, Hohai University, Nanjing (China); Possnert, Göran [Tandem Laboratory, Uppsala University, Uppsala (Sweden); Chen, Li [State Key Laboratory of Hydrology-Water Resources and Hydraulic Engineering, Hohai University, Nanjing 210098 (China); College of Hydrology and Water Resources, Hohai University, Nanjing (China)

    2015-10-15

    The global distribution of the radioactive isotope iodine-129 in surface waters (lakes and rivers) is presented here and compared with the atmospheric deposition and distribution in surface marine waters. The results indicate relatively high concentrations in surface water systems in close vicinity of the anthropogenic release sources as well as in parts of Western Europe, North America and Central Asia. {sup 129}I level is generally higher in the terrestrial surface water of the Northern hemisphere compared to the southern hemisphere. The highest values of {sup 129}I appear around 50°N and 40°S in the northern and southern hemisphere, separately. Direct gaseous and marine atmospheric emissions are the most likely avenues for the transport of {sup 129}I from the sources to the terrestrial surface waters. To apply iodine-129 as process tracer in terrestrial surface water environment, more data are needed on {sup 129}I distribution patterns both locally and globally.

  19. Radiation damage measurements in room temperature semiconductor radiation detectors

    International Nuclear Information System (INIS)

    Franks, L.A.; Olsen, R.W.; James, R.B.; Brunett, B.A.; Walsh, D.S.; Doyle, B.L.; Vizkelethy, G.; Trombka, J.I.

    1998-01-01

    The literature of radiation damage measurements on cadmium zinc telluride (CZT), cadmium telluride (CT), and mercuric iodide (HgI 2 ) is reviewed and in the case of CZT supplemented by new alpha particle data. CZT strip detectors exposed to intermediate energy (1.3 MeV) proton fluences exhibit increased interstrip leakage after 10 10 p/cm 2 and significant bulk leakage after 10 12 p/cm 2 . CZT exposed to 200 MeV protons shows a two-fold loss in energy resolution after a fluence of 5 x 10 9 p/cm 2 in thick (3 mm) planar devices but little effect in 2 mm devices. No energy resolution effects were noted from moderated fission spectrum of neutrons after fluences up to 10 10 n/cm 2 , although activation was evident. Exposures of CZT to 5 MeV alpha particle at fluences up to 1.5 x 10 10 α/cm 2 produced a near linear decrease in peak position with fluence and increases in FWHM beginning at about 7.5 x 10 9 α/cm 2 . CT detectors show resolution losses after fluences of 3 x 10 9 p/cm 2 at 33 MeV for chlorine-doped detectors. Indium doped material may be more resistant. Neutron exposures (8 MeV) caused resolution losses after fluences of 2 x 10 10 n/cm 2 . Mercuric iodide has been studied with intermediate energy protons (10 to 33 MeV) at fluences up to 10 12 p/cm 2 and with 1.5 GeV protons at fluences up to 1.2 x 10 8 p/cm 2 . Neutron exposures at 8 MeV have been reported at fluences up to 10 15 n/cm 2 . No radiation damage was reported under these irradiation conditions

  20. Responses and mechanisms of positive electron affinity molecules in the N2 mode of the thermionic ionization detector and the electron-capture detector

    International Nuclear Information System (INIS)

    Jones, C.S.

    1989-01-01

    Very little knowledge has been acquired in the past on the mechanistic pathway by which molecules respond in the N 2 mode of the thermionic ionization detector. An attempt is made here to elucidate the response mechanism of the detector. The basic response mechanisms are known for the electron capture detector, and an attempt is made to identify the certain mechanism by which selected molecules respond. The resonance electron capture rate constant has been believed to be temperature independent, and investigations of the temperature dependence of electron capture responses are presented. Mechanisms for the N 2 mode of the thermionic ionization detector have been proposed by examining the detector response to positive electron affinity molecules and by measurement of the ions produced by the detector. Electron capture mechanisms for selected molecules have been proposed by examining their temperature dependent responses in the electron capture detector and negative ion mass spectra of the samples. In studies of the resonance electron capture rate constant, the relative responses of selected positive electron affinity molecules and their temperature dependent responses were investigated. Positive electron affinity did not guarantee large responses in the N 2 mode thermionic ionization detector. High mass ions were measured following ionization of samples in the detector. Responses in the electron capture detector varied with temperature and electron affinity

  1. Numerical analysis of edge effects in side illuminated strip detectors for digital radiology

    CERN Document Server

    Krizaj, D

    2000-01-01

    The influence of edge defects on side illuminated X-ray strip detectors for digital radiology is investigated by numerical device modeling. By assuming positive fixed oxide charges on side and top surfaces simulations have shown strong curvature of the equipotential lines in the edge region. A fraction of the edge generated current surpasses the edge guard-ring junction and is collected by the readout strips. As a consequence, strips cannot be placed close to the edge of the structure and collection efficiency is reduced. An n-on-n instead of a p-on-n strip detector is proposed enabling collection of edge generated carriers by a very narrow guard-ring junction and placement of the readout strip close to the edge without increase of the strip leakage current.

  2. Particle detectors based on InP Schottky diodes

    Czech Academy of Sciences Publication Activity Database

    Yatskiv, Roman; Grym, Jan

    2012-01-01

    Roč. 10, č. 7 (2012), C100051-C100055 ISSN 1748-0221 R&D Projects: GA MŠk(CZ) OC10021; GA MŠk LD12014 Institutional support: RVO:67985882 Keywords : Particle detector * High purity InP layer * Schottky diode Subject RIV: JA - Electronics ; Optoelectronics, Electrical Engineering Impact factor: 1.869, year: 2011

  3. Indirect measurement of the 15N(p,α)12C reaction cross section through the THM

    International Nuclear Information System (INIS)

    Romano, S.; La Cognata, M.; Spitaleri, C.; Cherubini, S.; Gulino, M.; Lamia, L.; Musumarra, A.; Tribble, R.; Trache, C.L.; Fu, C.

    2005-01-01

    Among the reactions of the stellar CNO cycle, the 15 N(p,α) 12 C plays a crucial role. In particular its reaction rate is important for understanding the CNOI escape towards CNOII. Thus it is important to study its bare nucleus cross section at the energies typical of such astrophysical environments, i.e. few tens of keV. At these energies such a measurement is hard to perform in a direct way because of the electron screening effect as pointed out for several cases. A possibility is then given by indirect methods and in particular the Trojan Horse Method (THM) has been applied in this case. The preliminary validity test for the study of 15 N(p,α) 12 C via the 15 N(d,α 12 C)n three body reaction is reported in this work. A 15 N beam was provided by the cyclotron at Texas A and M University with energy 60 MeV/c and delivered onto a CD 2 target. A ΔE/E telescope (PSD + ionization chamber) and a pair of PSD's were mounted in a coplanar geometry. Coincidences between the detectors were considered and the 15 N-p quasi-free contribution to the overall three-body cross-section was selected. Data analysis and preliminary results will be discussed and compared with direct data. (author)

  4. Performance studies of the P barANDA planar GEM-tracking detector in physics simulations

    Science.gov (United States)

    Divani Veis, Nazila; Firoozabadi, Mohammad M.; Karabowicz, Radoslaw; Maas, Frank; Saito, Takehiko R.; Voss, Bernd; ̅PANDA Gem-Tracker Subgroup

    2018-03-01

    The P barANDA experiment will be installed at the future facility for antiproton and ion research (FAIR) in Darmstadt, Germany, to study events from the annihilation of protons and antiprotons. The P barANDA detectors can cover a wide physics program about baryon spectroscopy and nucleon structure as well as the study of hadrons and hypernuclear physics including the study of excited hyperon states. One very specific feature of most hyperon ground states is the long decay length of several centimeters in the forward direction. The central tracking detectors of the P barANDA setup are not sufficiently optimized for these long decay lengths. Therefore, using a set of the planar GEM-tracking detectors in the forward region of interest can improve the results in the hyperon physics-benchmark channel. The current conceptual designed P barANDA GEM-tracking stations contribute the measurement of the particles emitted in the polar angles between about 2 to 22 degrees. For this designed detector performance and acceptance, studies have been performed using one of the important hyperonic decay channel p bar p → Λ bar Λ → p bar pπ+π- in physics simulations. The simulations were carried out using the PandaRoot software packages based on the FairRoot framework.

  5. Measurement of the long-range pseudorapidity correlations and associated Fourier harmonics in $\\sqrt{s_{N,N}}$ = 5.02 TeV proton-lead collisions with the ATLAS detector

    CERN Document Server

    Radhakrishnan, S; The ATLAS collaboration

    2014-01-01

    Measurement of two-particle correlation functions and the first five azimuthal harmonics, $v_{1} - v_{5}$, are presented, using 31 $nb^{−1}$ of p+Pb collisions at $\\sqrt{s_{N,N}}$ = 5.02 TeV measured in the ATLAS detector at the LHC. Significant long-range “ridge-like” correlations are observed for pairs with small relative azimuthal angle (|$\\Delta\\phi$| 2$\\pi$/3) over the transverse momentum range $p_T$ 4 GeV. The $v_2$($p_T$), $v_3$($p_T$) and $v_4$($p_T$) are compared to the $v_n$ coefficients in Pb+Pb collisions at $\\sqrt{s_{N,N}}$ = 2.76 TeV with similar $N_{ch}$. The $v_n$($p_T$) shows similar shape in the two collision systems, after rescaling the $p_T$-axis of the Pb+Pb data by a factor of 1.25 to account for the difference in their $\\langle p_{T} \\rangle$, as predicted by a hydrodynamic model.

  6. Development of large area CsI photocathodes for the Alice/Humped Rich detector

    International Nuclear Information System (INIS)

    Hoedlmoser, H.

    2005-03-01

    The work carried out within the framework of this PhD deals with the measurement of the photoelectric properties of large area thin film cesium iodide photocathodes (PCs) which are to be used as a photon converter in a proximity focusing RICH detector for High Momentum Particle Identification (HMPID) in the ALICE experiment at the LHC. The objective was to commission a VUV-scanner setup for in-situ measurements of the photoelectric response of the CsI PCs and the use of this system to investigate the properties of these photon detectors. Among the investigated phenomena the most important ones were: - Post deposition treatment: from R and D studies it was known, that the PC response can be increased by heating the PC after the coating process. Within this thesis it was shown that the enhancement effect is mandatory to achieve the photon conversion efficiency required by the detector design and that any difference in PC quality is due to differences in this enhancement effect. - Ageing effects: CsI PCs age under exposure to humidity due to the hygroscopicity of CsI and under high photon flux and ion bombardment inside the Multi Wire Proportional Chamber (MWPC) of the detector. All three effects have been investigated with the VUV scanner. The first effect requires a careful treatment of the CsI PCs to avoid exposure to humid air. Furthermore this effect was found to be reversible if the PC is heated. High photon fluxes are irrelevant in a Cherenkov detector dealing with single photons, however, the problem needed to be investigated to verify that the measurement process itself does not damage the PCs. The third mechanism is very important as it occurs during normal detector operation and depends only on the radiation environment of the experiment. For a dose corresponding to 20 years of operation inside ALICE an accelerated test showed a clear degradation of up to 40 % of the PC response. With the results of these studies the first 17 PCs (of 42) for the detector

  7. Propuesta de un sistema de transformación de plantas de papa (<i>Solanum tuberosum sp. andigenai> var. Pastusa suprema mediado por <i>Agrobacterium tumefaciensi>

    Directory of Open Access Journals (Sweden)

    López Alfredo

    2007-06-01

    Full Text Available <p align="justify">Se ha demostrado que la transformación de papa (<i>Solanum tuberosumi> mediada por <i>Agrobacterium tumefaciensi> es dependiente del genotipo y que la mayoría de protocolos de transformación reportados son ineficientes al aplicarlos en la subespecie <i>andigena>. En esta propuesta se manejaron los procesos iniciales de mejoramiento genético de la nueva variedad colombiana de papa Pastusa suprema (<i>Solanum tuberosum sp. andigenai> que es altamente androestéril, característica de gran importancia para los organismos modificados genéticamente. Esta variedad resultó de la hibridación interespecífica de tres especies de papa (<i>Solanum stoloniferumi>, <i>Solanum phurejai> var. Yema de huevo y <i>Solanum tuberosum sp. andigenai> var. Parda pastusa. Se transformaron explantes internodales mediante el vector pCambia2301 que posee un gen reportero de la β-glucoronidasa y un gen de resistencia a la kanamicina. Se obtuvo un porcentaje de transformación inicial de 31 ± 2,5%, que se expresó mediante formación de callo sobre medios de selección y una frecuencia final con base en el ensayo GUS de 30%. Este es el primer reporte de transformación de un híbrido interespecífico de tres especies diferentes.p>

  8. Characterization of Si pixel detectors of different thickness

    Energy Technology Data Exchange (ETDEWEB)

    Bisogni, M.G.; Boscardin, M.; Dalla Betta, G.F.; Delogu, P.; Fantacci, M.E.; Gregori, P.; Linsalata, S.; Novelli, M. E-mail: marzia.novelli@pi.infn.it; Piemonte, C.; Quattrocchi, M.; Rosso, V.; Stefanini, A.; Zorzi, N.; Zucca, S

    2004-02-01

    Tests on silicon pixel detector in the mammographic energy range have shown good imaging performances so, in order to improve the efficiency in this energy range, we have designed thicker detectors of the p{sup +}/n type. The detectors have been fabricated by ITC-IRST (Trento, Italy) in high resistivity silicon substrates (300 and 525 {mu}m thick). A TCAD simulation work has been carried out to optimize the electric field distribution and to enhance the breakdown voltage. Very low leakage current and high breakdown voltage characteristics have been measured on detectors in preliminary on-wafer tests. After that, detectors have been bump-bonded to a dedicated VLSI electronic chips, realizing an assembly. Choosing the best set-up condition and using a standard mammographic tube, we have acquired a large area image (8x8 cm{sup 2}) of the RMI 156 phantom, recommended for mammographic quality checks. In order to cover the whole surface, we have acquired different images translating the phantom over the assembly. We present some selected results for these assemblies both for the electrical characteristics and for the imaging performances.

  9. Characterization of proton and neutron irradiated low resistivity p-on-n magnetic Czochralski ministrip sensors and diodes

    Energy Technology Data Exchange (ETDEWEB)

    Pacifico, Nicola, E-mail: nicola.pacifico@cern.ch [CERN, Geneva (Switzerland); Dolenc Kittelmann, Irena; Fahrer, Manuel; Moll, Michael [CERN, Geneva (Switzerland); Militaru, Otilia [UCL, Louvain (Belgium)

    2011-12-01

    Transient Current Technique (TCT) and Charge Collection Efficiency (CCE) measurements were performed on low resistivity (280{Omega}cm) n-bulk, p-readout magnetic Czochralski ministrip sensors and diodes. The detectors were irradiated with neutrons and 24 GeV/c protons up to a total NIEL equivalent fluence of 8 Multiplication-Sign 10{sup 15}/cm{sup 2}. The study was addressed to assess the radiation tolerance of the detectors up to fluences expected in the next generations of High Energy Physics experiments. The charge collection efficiency after irradiation was found to be much higher than for standard FZ silicon p-in-n sensors. The underlying physics of this remarkable result was investigated by performing Edge-TCT measurements on one of the neutron irradiated ministrip sensors to extract detailed informations about the field and efficiency profiles of the detector.

  10. Car-borne survey measurements with a 3x3` NaI detector

    Energy Technology Data Exchange (ETDEWEB)

    Larsen, E.; Ugletveit, F.; Floe, L.; Mikkelborg, O. [Norwegian Radiation Protection Authority, Oesteraas (Norway)

    1997-12-31

    The Norwegian Radiation Protection Authority (NRPA) took part in the international survey measurement exercise RESUME95 that was arranged in Finland in August 1995. NRPA performed measurements with a simple car-borne measuring system based on standard equipment, a 3x3` NaI detector, an MCA and a GPS connected to a portable PC. The results show substantial variations in dose rate inside areas of a few square kilometres. Spectrum analysis shows that a major part of these differences are caused by variations in deposition of {sup 137}Cs. Our results show that even standard 3x3` NaI detectors can be used for car based survey measurements in fall out situations and search for sources. The detection limits are higher than for larger detectors, but the main limiting factor seem to be the timing capabilities of the acquisition system. (au).

  11. Car-borne survey measurements with a 3x3' NaI detector

    International Nuclear Information System (INIS)

    Larsen, E.; Ugletveit, F.; Floe, L.; Mikkelborg, O.

    1997-01-01

    The Norwegian Radiation Protection Authority (NRPA) took part in the international survey measurement exercise RESUME95 that was arranged in Finland in August 1995. NRPA performed measurements with a simple car-borne measuring system based on standard equipment, a 3x3' NaI detector, an MCA and a GPS connected to a portable PC. The results show substantial variations in dose rate inside areas of a few square kilometres. Spectrum analysis shows that a major part of these differences are caused by variations in deposition of 137 Cs. Our results show that even standard 3x3' NaI detectors can be used for car based survey measurements in fall out situations and search for sources. The detection limits are higher than for larger detectors, but the main limiting factor seem to be the timing capabilities of the acquisition system. (au)

  12. Car-borne survey measurements with a 3x3` NaI detector

    Energy Technology Data Exchange (ETDEWEB)

    Larsen, E; Ugletveit, F; Floe, L; Mikkelborg, O [Norwegian Radiation Protection Authority, Oesteraas (Norway)

    1998-12-31

    The Norwegian Radiation Protection Authority (NRPA) took part in the international survey measurement exercise RESUME95 that was arranged in Finland in August 1995. NRPA performed measurements with a simple car-borne measuring system based on standard equipment, a 3x3` NaI detector, an MCA and a GPS connected to a portable PC. The results show substantial variations in dose rate inside areas of a few square kilometres. Spectrum analysis shows that a major part of these differences are caused by variations in deposition of {sup 137}Cs. Our results show that even standard 3x3` NaI detectors can be used for car based survey measurements in fall out situations and search for sources. The detection limits are higher than for larger detectors, but the main limiting factor seem to be the timing capabilities of the acquisition system. (au).

  13. Advanced Coating Technology for Enhanced Performance of Microchannel Plates for UV Detectors, Phase I

    Data.gov (United States)

    National Aeronautics and Space Administration — In this NASA SBIR Phase I proposal we propose to apply a highly conformal coating of ZnO and AlN or a double layer of GaN to the surface and internal pore walls of...

  14. Investigation on n/γ discrimination methods for liquid scintillator detector

    International Nuclear Information System (INIS)

    Li Kuinian; Li Yang; Zhang Mei; Zhang Zhongbing; Li Binkang; Zhang Xiaodong; Liu Jun; Zhang Xianpeng

    2014-01-01

    To obtain the n/γ discrimination ability of different digital pulse shape discrimination methods, four methods (rising time method, charge comparison method, pulse gradient analysis and frequency gradient analysis) in americium-beryllium mixed radiation fields were demonstrated. The signals from EJ-301 and BC501A scintillator detectors were digitized using oscilloscope. A comparison was taken among the four discrimination methods. The discrimination results of the four methods in liquid scintillator detectors show that the rising time method is the best and it provides a good choice in real-time n/γ discrimination system. (authors)

  15. Ressenya a Grifoll, Isabel, Julián Acebrón, Flocel Sabaté (eds. (2014: Cartografies de l’ànima. Identitat, memòria i escriptura, Lleida, Pagès Editors, 2014, 248 pàgs. ISBN:978-84-9975-517-5; i Acebrón, Julián, Isabel Grifoll, Flocel Sabaté (eds. (2015: La Construcció d’identitats imaginades. Literatura medieval i ideologia, Lleida, Pagès Editors, 2015, 320 pàgs. ISBN:978-84-9975-704-9

    Directory of Open Access Journals (Sweden)

    Vicent Martines

    2016-12-01

    Full Text Available Review to Grifoll, Isabel, Julián Acebrón, Flocel Sabaté (eds. (2014: Cartografies de l’ànima. Identitat, memòria i escriptura, Lleida, Pagès Editors, 2014, 248 pàgs. ISBN:978-84-9975-517-5; and Acebrón, Julián, Isabel Grifoll, Flocel Sabaté (eds. (2015: La Construcció d’identitats imaginades. Literatura medieval i ideologia, Lleida, Pagès Editors, 2015, 320 pàgs. ISBN:978-84-9975-704-9

  16. Study on the use of well-type NaI(TI) detector for 210Pb measurements

    International Nuclear Information System (INIS)

    Al-Azmi, Darwish; Mustapha, A.O.; Karunakara, N.

    2013-01-01

    The measurements of 210 Pb in environmental or geological samples are usually carried out using HPGe gamma spectrometers or by chemical separation followed by low background beta counting system. In the present study, the possibility of using a well-type NaI(TI) detector for the measurement of 210 Pb in such measurements has been explored. The measurements were tested using a well-type NaI(TI) detector of a standard size 7.6 cm x 7.6 cm (3x3 inches) with a well size of 2.86 cm diameter and 5.08 cm depth, which can accommodate vials of 20 ml capacity. The performance of the detector was tested by measuring the low-energy photons 46.5 keV of 210 Pb from the IAEA standard reference material. It is observed that the shape of the energy spectrum has been found to be comparable with those obtained using thin crystal (1.9 mm) NaI detectors for such low-photon energies. Therefore, it is expected that this well-type detector will prove useful in such low-energy photon measurements. (author)

  17. Evaluation of detectors for blood bioanalysis in Lu-177 and I-131 therapies for bone marrow dosimetry

    International Nuclear Information System (INIS)

    Degenhardt, Amilie Louize

    2016-01-01

    The measures traceability is mandatory for minimizing uncertainties in internal dosimetry for radiopharmaceuticals clinical studies and ensures the quality of the standard. Equipment should have resolution and efficiency compatible with radionuclides energies and, additionally, be able to quantify variations in human bodies' activities samples since the initial administration near the minimum residual activities. For testing three equipment (ionization chamber Capintec 25R, sodium iodine scintillator LTI Genesys Gamma-1 and high hyperpure germanium detector Canberra), they were prepared Lu-177 and I-131 radiation sources simulating patient's blood samples activities by adopting the following hypothesis: (1) initial activities according the Brazilian protocols; (2) blood volume in the whole body (5.3 L for adult men and 1.4 L for 5 years-old children); (3) effective half-lives (1.61 h and 42.9 h for Lu-177 bi-exponential adjustment and 15.7 h for I-131 mono-exponential adjustment); (4) sampling between 30 min and 168 h; (v) blood density adjustments. The standard sources were measured in the secondary standard ionization chamber Centronics IG11 at the Laboratorio Nacional de Metrologia das Radiacoes Ionizantes. The Capintec ionization chamber efficiencies ranged, respectively for I-131 and Lu-177, between (111.58±0.02)% and (102.27±0.01)% and HPGe semiconductor detector efficiencies ranged, respectively, between (89.40±0.03)% and (87.80±0.04)%. For the NaI detector, when the Lu-177 sources were positioned inside the detector the efficiencies ranged between (12.66±0.01)% and (11.54± 0.07)% and when the sources were positioned at 5 cm and 10 cm from the detector the efficiencies decreased to less than 5%. For I-131 sources positioned inside the detector, the efficiencies ranged between (29.76±0.21)% and (30.20±0.04)% and they decreased to less than 5% when they were positioned at 5 cm and 10 cm from the detector (deviation greater than 95

  18. The I.P.S.N. barometer on the risk perception and the safety, a tool of opinion follow up on the risks in France

    International Nuclear Information System (INIS)

    Charron, S.; Mansoux, H.

    2001-01-01

    The risk perception by the public is one of the policy elements of management, information, communication on the nuclear. the I.P.S.N. is working since 1977 on the psycho-social aspects of the risk. It makes inquiries about public opinion, attitudes, credibility of diffused information. The results of these polls are gathered in the I.P.S.N. barometer of the risk and safety perception and constitutes an unique tool in France by the number of data and their follow up in time. (N.C.)

  19. Immobilization of Tyrosinase on (3-Aminopropyltriethoxysilane-Functionalized Carbon Felt-Based Flow-Through Detectors for Electrochemical Detection of Phenolic Compounds

    Directory of Open Access Journals (Sweden)

    Zheng Zhou

    2017-07-01

    Full Text Available Tyrosinase (TYR was covalently immobilized onto amino-functionalized carbon felt (CF surface via glutaraldehyde (GA. Prior to the TYR-immobilization, primary amino group was introduced to the CF surface by treatment with 3-aminopropyltriethoxysilane (APTES. The resulting TYR-immobilized CF was used as a working electrode unit of an electrochemical flow-through detector for mono- and di-phenolic compounds (i.e., catechol, p-cresol, phenol and p-chlorophenol. Additionally, flow injection peaks based on electroreduction of the enzymatically produced o-quinone species were detected at −0.05 V vs. Ag/AgCl. The resulting TYR/GA/APTES/CF biosensor responded well to all compounds tested with limits of detection range from 7.5 to 35 nmol−1 (based on three times S/N ratio. Moreover, such modified electrode exhibits good stability and reproducibility for catechol. No serious degradation of the peak current was found over 30 consecutive injections.

  20. iDESWEB: Ejercicio: JavaScript: Una página web con un poco de código (encuesta de valoración)

    OpenAIRE

    Luján Mora, Sergio

    2013-01-01

    Solución del ejercicio "JavaScript: Una página web con un poco de código (encuesta de valoración)" del curso MOOC iDESWEB, Introducción al desarrollo web. Página web del curso: http://idesweb.es/

  1. Non-destructive testing of proteins in single seeds using the 14N(d,p)15N and 14N(d,∝)12C reactions

    International Nuclear Information System (INIS)

    Moreno B, E.

    1986-01-01

    A non-destructive nuclear technique aimed for the analysis of proteins in single seeds using the 14 N(d,p) 15 N and 14 N(d,∝) 12 C reactions is implemented. This work was performed at the ININ's Tandem Van der Graaff facility, using a 6 MeV deuteron beam and a surface barrier solid state detector with its associated electronics for the pulse height analysis of the charged particles backscattered from the samples. Well defined populations of five varieties of wheat, and four of corn were used as samples in order to optimize the experimental conditions for the analysis, these results were compared with those obtained using an analytical chemical method (Kjeldahl). The linear regression coefficient (''r'') obtained from the results of these two methods was: r = 0.9 in the case of wheat, and r = 0.7 in the case of corn, which we consider adequate figures for using the non-destructive nuclear technique as an aid or support in agricultural seed protein improvement programs. In adequate geometrical conditions the analysis per seed can take a few seconds, and the exposure to the germ can be as low as ≅1 Rad. (author)

  2. The effect of cathode bias (field effect) on the surface leakage current of CdZnTe detectors

    DEFF Research Database (Denmark)

    Bolotnikov, A.E.; Chen, C.M.H.; Cook, W.R.

    2003-01-01

    Surface resistivity is an important parameter of multi-electrode CZT detectors such as coplanar-grid, strip, or pixel detectors. Low surface resistivity results in a high leakage current and affects the charge collection efficiency in the areas near contacts. Thus, it is always desirable to have ...

  3. Polarization phenomena in Al/p-CdTe/Pt X-ray detectors

    Energy Technology Data Exchange (ETDEWEB)

    Principato, F., E-mail: fabio.principato@unipa.it; Turturici, A.A.; Gallo, M.; Abbene, L.

    2013-12-01

    Over the last decades, CdTe detectors are widely used for the development of room temperature X-ray and gamma ray spectrometers. Typically, high resolution CdTe detectors are fabricated with blocking contacts (indium and aluminum) ensuring low leakage currents and high electric field for optimum charge collection. As well known, time instability under bias voltage (termed as polarization) is the major drawback of CdTe diode detectors. Polarization phenomena cause a progressive degradation of the spectroscopic performance with time, due to hole trapping and detrapping from deep acceptors levels. In this work, we studied the polarization phenomenon on new Al/p-CdTe/Pt detectors, manufactured by Acrorad (Japan), through electrical and spectroscopic approaches. In particular, we investigated on the time degradation of the spectroscopic response of the detectors at different temperatures, voltages and energies. Current transient measurements were also performed to better understand the properties of the deep acceptor levels and their correlation with the polarization effect.

  4. A new method of making ohmic contacts to p-GaN

    Energy Technology Data Exchange (ETDEWEB)

    Hernández-Gutierrez, C.A., E-mail: chernandez@fis.cinvestav.mx [DNyN, Cinvestav-IPN, México, DF, 07360 (Mexico); Kudriavtsev, Yu. [Departamento Ingeniería Eléctrica – SEES, Cinvestav-IPN, México, DF, 07360 (Mexico); Mota, Esteban [ESIME, Instituto Politécnico Nacional, México, DF, 07738 (Mexico); Hernández, A.G.; Escobosa-Echavarría, A.; Sánchez-Resendiz, V. [Departamento Ingeniería Eléctrica – SEES, Cinvestav-IPN, México, DF, 07360 (Mexico); Casallas-Moreno, Y.L.; López-López, M. [Departamento Física, Cinvestav-IPN, México, DF, 07360 (Mexico)

    2016-12-01

    Highlights: • Low resistance Ohmic contacts preparation is based on low energy high dose In{sup +} ion implantation into Metal/p-GaN to achieve a thin layer of In{sub x}Ga{sub 1-x}N just at the interface. • The specific ohmic contact was reduced from 10{sup −2} Ωcm{sup 2} to 2.5 × 10{sup −4} Ωcm{sup 2}. - Abstract: The structural, chemical, and electrical characteristics of In{sup +} ion-implanted Au/Ni, Au/Nb and Au/W ohmic contacts to p-GaN were investigated. After the preparation of Ni, Nb and W electrode on the surface of p-GaN, the metal/p-GaN contact interface was implanted by 30 keV In{sup +} ions with an implantation dose of 5 × 10{sup 15} ions/cm{sup 2} at room temperature to form a thin layer of In{sub x}Ga{sub 1-x}N located at the metal-semiconductor interface, achieved to reduce the specific contact resistance due to the improving quantum tunneling transport trough to the structure. The characterization was carried out by high-resolution X-ray diffraction, scanning electron microscopy, Raman spectroscopy, and secondary ion mass spectrometry to investigate the formation of ternary alloy, re-crystallization by rapid thermal annealing process after In{sup +} implantation, and the redistribution of elements. The specific contact resistance was extracted by current-voltage (I-V) curves using transmission line method; the lowest specific contact resistance of 2.5 × 10{sup −4} Ωcm{sup 2} was achieved for Au/Ni/p-In{sub x}Ga{sub 1-x}N/p-GaN ohmic contacts.

  5. Choice of crystal surface finishing for a dual-ended readout depth-of-interaction (DOI) detector

    International Nuclear Information System (INIS)

    Fan, Peng; Ma, Tianyu; Liu, Yaqiang; Wang, Shi; Wei, Qingyang; Yao, Rutao

    2016-01-01

    The objective of this study was to choose the crystal surface finishing for a dual-ended readout (DER) DOI detector. Through Monte Carlo simulations and experimental studies, we evaluated 4 crystal surface finishing options as combinations of crystal surface polishing (diffuse or specular) and reflector (diffuse or specular) options on a DER detector. We also tested one linear and one logarithm DOI calculation algorithm. The figures of merit used were DOI resolution, DOI positioning error, and energy resolution. Both the simulation and experimental results show that (1) choosing a diffuse type in either surface polishing or reflector would improve DOI resolution but degrade energy resolution; (2) crystal surface finishing with a diffuse polishing combined with a specular reflector appears a favorable candidate with a good balance of DOI and energy resolution; and (3) the linear and logarithm DOI calculation algorithms show overall comparable DOI error, and the linear algorithm was better for photon interactions near the ends of the crystal while the logarithm algorithm was better near the center. These results provide useful guidance in DER DOI detector design in choosing the crystal surface finishing and DOI calculation methods. (paper)

  6. Secondary standard neutron detector for measuring total reaction cross sections

    International Nuclear Information System (INIS)

    Sekharan, K.K.; Laumer, H.; Gabbard, F.

    1975-01-01

    A neutron detector has been constructed and calibrated for the accurate measurement of total neutron-production cross sections. The detector consists of a polyethylene sphere of 24'' diameter in which 8- 10 BF 3 counters have been installed radially. The relative efficiency of this detector has been determined for average neutron energies, from 30 keV to 1.5 MeV by counting neutrons from 7 Li(p,n) 7 Be. By adjusting the radial positions of the BF 3 counters in the polyethylene sphere the efficiency for neutron detection was made nearly constant for this energy range. Measurement of absolute efficiency for the same neutron energy range has been done by counting the neutrons from 51 V(p,n) 51 Cr and 57 Fe(p,n) 57 Co reactions and determining the absolute number of residual nuclei produced during the measurement of neutron yield. Details of absolute efficiency measurements and the use of the detector for measurement of total neutron yields from neutron producing reactions such as 23 Na(p,n) 23 Mg are given

  7. Application of MSM InP detectors to the measurement of pulsed X-ray radiation

    Czech Academy of Sciences Publication Activity Database

    Ryc, L.; Dobrzanski, L.; Dubecký, L.; Kaczmarczyk, J.; Pfeifer, Miroslav; Riesz, F.; Slysz, W.; Surma, B.

    2008-01-01

    Roč. 163, 4-6 (2008), 559-567 ISSN 1042-0150 R&D Projects: GA MŠk(CZ) LC528 Institutional research plan: CEZ:AV0Z10100523 Keywords : InP detector * X-ray detector * picosecond detector * laser plasma Subject RIV: BH - Optics, Masers, Lasers Impact factor: 0.415, year: 2008

  8. Characteristics of NaI detector in positron imaging device HEADTOME employing circular ring array

    International Nuclear Information System (INIS)

    Miura, Shuichi; Kanno, Iwao; Aizawa, Yasuo; Murakami, Matsutaro; Uemura, Kazuo

    1984-01-01

    In positron emission computed tomographs employing circular ring arrays of detectors, the performance of the imaging device has been specified ultimately by the characteristics of the detector. The responses of NaI detector were studied when detecting positron annihilation photon (511 keV). The study was mainly by using the NaI detector used in hybrid emission computed tomography (CT) ''HEADTOME'' we had developed. A series of measurements were carried out positioning two detectors with 40 cm distance and scanning 22 Na point source in water. Both detectors was inclined from 0 0 through 30 0 to change incident angle of positron annihilation toward crystal face. Energy window was set from 100 to 700 keV. The results were presented as follows; 1 Shortening the crystal length from 7 to 5 cm made sensitivity decrease about 10% and resolution deteriorate about 1 mm (FWHM). 2 As the results of varying the width of the crystal, 20 mm width was optimal at any incident angle. 3 The lead septum between the detectors was the thickness of 4 mm enough to reject multiple detector interactions (crosstalk). 4 Beam mask which was made of lead in order to improve spatial resolution and placed on crystal face worked effectively for incident angles from 0 0 to 15 0 but degraded uniformity of spatial resolution from 0 0 to through 30 0 . (author)

  9. Studies on brain blood-flow with N-isopropyl-(I-123)p-iodoamphetamine in dementia

    International Nuclear Information System (INIS)

    Shin, Akinori

    1989-01-01

    A differentiation between patients with senile dementia of Alzheimer type (SDAT) and patients with multi-infarct dementia (MID) was attempted in this paper. Twenty normal subjects, 20 SDAT and 20 MID patients were studied with single photon emission computed tomography (SPECT) using N-isopropyl-(I-123)p-iodoamphetamine ( 123 I-IMP). SPECT was started 10 minutes after the injection of 3.0 mCi 123 I-IMP. Eight anatomical regions (region of interest, ROI) were examined at the level of the basal ganglia and ten at the level of the centrum semiovale. The count ratio of each ROI to the average was calculated and tested with Student's t-test of mean differences. The ratios of right inferior frontal region and superior frontal region were significantly lower in the SDAT patients than in the normal subjects. The left superior frontal region showed lower mean ratios in SDAT patients, but the difference was not statistically significant. This study supports the suggestion that there is frontal region hypofunction in SDAT patients. SPECT with 123 I-IMP is a useful method in the non-invasive assessment of cerebral pathophysiology in dementia. (author)

  10. Studies on brain blood-flow with N-isopropyl-(I-123)p-iodoamphetamine in dementia

    Energy Technology Data Exchange (ETDEWEB)

    Shin, Akinori [Osaka Medical Coll., Takatsuki (Japan)

    1989-06-01

    A differentiation between patients with senile dementia of Alzheimer type (SDAT) and patients with multi-infarct dementia (MID) was attempted in this paper. Twenty normal subjects, 20 SDAT and 20 MID patients were studied with single photon emission computed tomography (SPECT) using N-isopropyl-(I-123)p-iodoamphetamine ({sup 123}I-IMP). SPECT was started 10 minutes after the injection of 3.0 mCi {sup 123}I-IMP. Eight anatomical regions (region of interest, ROI) were examined at the level of the basal ganglia and ten at the level of the centrum semiovale. The count ratio of each ROI to the average was calculated and tested with Student's t-test of mean differences. The ratios of right inferior frontal region and superior frontal region were significantly lower in the SDAT patients than in the normal subjects. The left superior frontal region showed lower mean ratios in SDAT patients, but the difference was not statistically significant. This study supports the suggestion that there is frontal region hypofunction in SDAT patients. SPECT with {sup 123}I-IMP is a useful method in the non-invasive assessment of cerebral pathophysiology in dementia. (author).

  11. Detección en línea de onda-P en sismogramas 3-D utilizando redes neuronales

    Directory of Open Access Journals (Sweden)

    Alzate Carlos

    2003-08-01

    Full Text Available <p class="MsoNormal" style="line-height: normal; margin: 0cm 0cm 0pt; mso-layout-grid-align: none;">We have developed a P-wave arrival time detector of tectonic events over digital three-component records online. This process uses two different methods: the first one works with a LVR detector, and the second one uses a statistical classifier of classes (signal with P-wave and signal with seismic noise. Detection uses multi-layer perceptron neural network where is taken advantage of non-lineal input-output, relation, well-generalization, low computational demands, etc. These appropriate qualities for real time signal processing. The input data for the system becomes a normalized vector of seismic signal and its polarization arguments. Testes were done with data from IRIS and INGEOMINAS database. Although the system has a good perforance, its accuracy is not acceptable.p> class="MsoNormal" style="line-height: normal; margin: 0cm 0cm 0pt; mso-layout-grid-align: none;">Se desarrolla un detector en línea del tiempo de arribo de ondas P sobre registros electrónicos de tres componentes de eventos tectónicos. Se lleva a cabo la detección en línea de la onda-p empleando redes neuronales (RN, utilizando dos diferentes formas: en la primera se sintetiza el detector de LRV, mientras en la segunda se desarrolla un clasificador estadístico con las respectivas clases (señal con onda-p presente y señal con solo ruido presente. La detección se realiza empleando redes neuronales de tipo perceptrón multi-capa, en las cuales se aprovechan las siguientes cualidades: su capacidad de mapeo no lineal de entrada-salida, buena generalización, bajo costo computacional, entre otras. Las anteriores cualidades hacen que las RN sean apropiadas para el proceso de señales en tiempo real. Las entradas a la RN corresponden a

  12. A detector module with highly efficient surface-alpha event rejection operated in CRESST-II Phase 2

    Energy Technology Data Exchange (ETDEWEB)

    Strauss, R. [Max-Planck-Institut fuer Physik, Munich (Germany); Technische Universitaet Muenchen, Physik-Department, Garching (Germany); Angloher, G.; Ferreiro, N.; Hauff, D.; Kiefer, M.; Petricca, F.; Proebst, F.; Reindl, F.; Seidel, W.; Stodolsky, L.; Tanzke, A.; Wuestrich, M. [Max-Planck-Institut fuer Physik, Munich (Germany); Bento, A. [Universidade de Coimbra, CIUC, Departamento de Fisica, Coimbra (Portugal); Bucci, C.; Canonica, L.; Gorla, P.; Schaeffner, K. [Laboratori Nazionali del Gran Sasso, INFN, Assergi (Italy); Erb, A. [Technische Universitaet Muenchen, Physik-Department, Garching (Germany); Walther-Meissner-Institut fuer Tieftemperaturforschung, Garching (Germany); Feilitzsch, F. von; Guetlein, A.; Lanfranchi, J.C.; Muenster, A.; Potzel, W.; Roth, S.; Schoenert, S.; Stanger, M.; Ulrich, A.; Wawoczny, S.; Willers, M.; Zoeller, A. [Technische Universitaet Muenchen, Physik-Department, Garching (Germany); Jochum, J.; Loebell, J.; Rottler, K.; Sailer, C.; Scholl, S.; Strandhagen, C.; Uffinger, M.; Usherov, I. [Eberhard-Karls-Universitaet Tuebingen, Physikalisches Institut, Tuebingen (Germany); Kluck, H. [Institut fuer Hochenergiephysik der Oesterreichischen Akademie der Wissenschaften, Wien (Austria); Vienna University of Technology, Atominstitut, Wien (Austria); Kraus, H. [University of Oxford, Department of Physics, Oxford (United Kingdom); Schieck, J. [Institut fuer Hochenergiephysik der Oesterreichischen Akademie der Wissenschaften, Wien (Austria); Sivers, M. von [Technische Universitaet Muenchen, Physik-Department, Garching (Germany); University of Bern, Albert Einstein Center for Fundamental Physics, Bern (Switzerland)

    2015-08-15

    The cryogenic dark matter experiment CRESSTII aims at the direct detection of WIMPs via elastic scattering off nuclei in scintillating CaWO{sub 4} crystals. We present a new, highly improved, detector design installed in the current run of CRESST-II Phase 2 with an efficient active rejection of surface-alpha backgrounds. Using CaWO{sub 4} sticks instead of metal clamps to hold the target crystal, a detector housing with fully-scintillating inner surface could be realized. The presented detector (TUM40) provides an excellent threshold of ∝0.60 keV and a resolution of σ ∼ 0.090 keV (at 2.60 keV).With significantly reduced background levels, TUM40 sets stringent limits on the spin-independent WIMP nucleon scattering cross section and probes a new region of parameter space for WIMP masses below 3GeV/c{sup 2}. In this paper, we discuss the novel detector design and the surface-alpha event rejection in detail. (orig.)

  13. The GALATEA test facility and a first study of α-induced surface events in a germanium detector

    Energy Technology Data Exchange (ETDEWEB)

    Irlbeck, Sabine

    2014-01-30

    Germanium detectors are a choice technology in fundamental research. They are suitable for the search for rare events due to their high sensitivity and excellent energy resolution. As an example, the GERDA (GERmanium Detector Array) experiment searching for neutrinoless double beta decay is described. The observation of this decay would resolve the fundamental question whether the neutrino is its own antiparticle. Especially adapted detector technologies and low background rates needed to detect very rare events such as neutrinoless double beta decays are discussed. The identification of backgrounds originating from the interaction of radiation, especially α-particles, is a focus of this thesis. Low background experiments face problems from α-particles due to unavoidable surface contaminations of the germanium detectors. The segmentation of detectors is used to obtain information about the special characteristics of selected events. The high precision test stand GALATEA was especially designed for surface scans of germanium detectors. As part of this work, GALATEA was completed and commissioned. The final commissioning required major upgrades of the original design which are described in detail. Collimator studies with two commercial germanium detectors are presented. Different collimation levels for a β-source were investigated and crystal axis effects were examined. The first scan with an α-source of the passivated end-plate of a special 19-fold segmented prototype detector mounted in GALATEA is described. The α-induced surface events were studied and characterized. Crosstalk and mirror pulses seen in the segments of the germanium detector were analyzed. The detector studies presented in this thesis will help to further improve the design of germanium detectors for low background experiments.

  14. The GALATEA test facility and a first study of α-induced surface events in a germanium detector

    International Nuclear Information System (INIS)

    Irlbeck, Sabine

    2014-01-01

    Germanium detectors are a choice technology in fundamental research. They are suitable for the search for rare events due to their high sensitivity and excellent energy resolution. As an example, the GERDA (GERmanium Detector Array) experiment searching for neutrinoless double beta decay is described. The observation of this decay would resolve the fundamental question whether the neutrino is its own antiparticle. Especially adapted detector technologies and low background rates needed to detect very rare events such as neutrinoless double beta decays are discussed. The identification of backgrounds originating from the interaction of radiation, especially α-particles, is a focus of this thesis. Low background experiments face problems from α-particles due to unavoidable surface contaminations of the germanium detectors. The segmentation of detectors is used to obtain information about the special characteristics of selected events. The high precision test stand GALATEA was especially designed for surface scans of germanium detectors. As part of this work, GALATEA was completed and commissioned. The final commissioning required major upgrades of the original design which are described in detail. Collimator studies with two commercial germanium detectors are presented. Different collimation levels for a β-source were investigated and crystal axis effects were examined. The first scan with an α-source of the passivated end-plate of a special 19-fold segmented prototype detector mounted in GALATEA is described. The α-induced surface events were studied and characterized. Crosstalk and mirror pulses seen in the segments of the germanium detector were analyzed. The detector studies presented in this thesis will help to further improve the design of germanium detectors for low background experiments.

  15. Synchrotron-based XPS studies of AlGaN and GaN surface chemistry and its relationship to ion sensor behaviour

    Energy Technology Data Exchange (ETDEWEB)

    Khir, Farah Liyana Muhammad, E-mail: 21001899@student.uwa.edu.au [School of Electrical, Electronic and Computer Engineering, The University of Western Australia, 35 Stirling Hwy., Crawley, Western Australia 6009 (Australia); Myers, Matthew, E-mail: Matt.Myers@csiro.au [School of Chemistry and Biochemistry, The University of Western Australia, 35 Stirling Hwy., Crawley, Western Australia 6009 (Australia); CSIRO Earth Science and Resource Engineering, Kensington, Western Australia 6151 (Australia); Podolska, Anna [School of Electrical, Electronic and Computer Engineering, The University of Western Australia, 35 Stirling Hwy., Crawley, Western Australia 6009 (Australia); Department of Exploration Geophysics, Curtin University of Technology, 26 Dick Perry Avenue, ARRC, Kensington, Western Australia 6151 (Australia); Sanders, Tarun Maruthi [School of Electrical, Electronic and Computer Engineering, The University of Western Australia, 35 Stirling Hwy., Crawley, Western Australia 6009 (Australia); Baker, Murray V., E-mail: murray.baker@uwa.edu.au [School of Chemistry and Biochemistry, The University of Western Australia, 35 Stirling Hwy., Crawley, Western Australia 6009 (Australia); Nener, Brett D., E-mail: brett.nener@uwa.edu.au [School of Electrical, Electronic and Computer Engineering, The University of Western Australia, 35 Stirling Hwy., Crawley, Western Australia 6009 (Australia); Parish, Giacinta, E-mail: giacinta.parish@uwa.edu.au [School of Electrical, Electronic and Computer Engineering, The University of Western Australia, 35 Stirling Hwy., Crawley, Western Australia 6009 (Australia)

    2014-09-30

    Highlights: • Soft X-ray was used to study the surface chemistry of GaN and AlGaN. • The surface chemistry and sensor behaviour were investigated. • The oxide of aluminum is significantly more reactive than gallium. • The Cl{sup −} ions are greater in GaN samples compared to AlGaN samples. - Abstract: Soft X-ray photoelectron spectroscopy was used to investigate the fundamental surface chemistry of both AlGaN and GaN surfaces in the context of understanding the behaviour of AlGaN/GaN heterostructures as chemical field-effect transistor (CHEMFET) ion sensors. AlGaN and GaN samples were subjected to different methods of oxide growth (native oxide and thermally grown oxide) and chemical treatment conditions. Our investigations indicate that the etching of the oxide layer is more pronounced with AlGaN compared to GaN. Also, we observed that chloride ions have a greater tendency to attach to the GaN surface relative to the AlGaN surface. Furthermore, chloride ions are comparatively more prevalent on surfaces treated with 5% HCl acid solution. The concentration of chloride ions is even higher on the HCl treated native oxide surface resulting in a very clear deconvolution of the Cl 2p{sub 1/2} and Cl 2p{sub 3/2} peaks. For GaN and AlGaN surfaces, a linear response (e.g. source-drain current) is typically seen with variation in pH of buffered solutions with constant reference electrode voltage at the surface gate; however, an inverted bath-tub type response (e.g. a maximum at neutral pH and lower values at pH values away from neutral) and a general tendency to negative charge selectivity has been also widely reported. We have shown that our XPS investigations are consistent with the different sensor response reported in the literature for these CHEMFET devices and may help to explain the differing response of these materials.

  16. Mapping of epitopes on Poa p I and Lol p I allergens with monoclonal antibodies.

    Science.gov (United States)

    Lin, Z W; Ekramoddoullah, A K; Jaggi, K S; Dzuba-Fischer, J; Rector, E; Kisil, F T

    1990-01-01

    Allergen Poa p I isolated from the dialysed aqueous extract of Kentucky blue grass pollen by affinity chromatography with an anti-Lol p I murine monoclonal antibody (MAb) 290A-167 was previously shown to consist of a 35.8-kilodalton (kD) component with a pI of 6.4, designated as Poa p Ia, and a 33-kD component with a pI of 9.1, designated as Poa p Ib. The present study reports on the comparative antigenic analyses of these two components, using MAbs produced separately against Poa p I and Lol p I. Thus, anti-Poa p I MAbs 60 and 61 and anti-Lol p I MAb 290A-167 recognized Poa p Ia and Poa p Ib whereas anti-Poa p I MAbs 62, 63 and 64 and anti-Lol p I MAb 348A-6 recognized only Poa p Ia. The specificities of the MAbs were further resolved by comparing their respective abilities to inhibit the binding of 125I-Poa p I or 125I-Lol p I to the different MAbs prepared in the form of solid phase. These studies revealed that at least 4 distinct epitopes (designated as E1, E2, E3 and E4) were shared by both Poa p I and Lol p I. All 4 epitopes were present on Poa p Ia whereas only E1 and E3 were detected on Poa p Ib. E1 was recognized by MAbs 60 and 61, E2 by MAbs 62, 63 and 64, E3 by MAb 290A-167 and E4 by MAb 348A-6.(ABSTRACT TRUNCATED AT 250 WORDS)

  17. Calibration of Nuclear Track Detectors

    International Nuclear Information System (INIS)

    Vukovic, J.B; Antanasijevic, R.; Novakovic, V.; Tasic, M.

    1998-01-01

    In this work we compare some of our preliminary results relating to the calibration Nuclear Track Detectors (NTD) with corresponding results obtained from other participants at the First International Intercomparison of Image Analyzers (III 97/98). Thirteen laboratories from Algeria, China, Czech Rep., France. Germany, Greece, Hungary, India, Italy, Mexico, Saudi Arabia, Slovenia and Yugoslavia participated in the III A 97/98. The NTD was 'Tustrack', Bristol. This type of CR-39 detector was etched by the organizer (J.Paltarey of al, Atomic Energy Research Institute, HPD, Budapest, Hungary). Etching condition was: 6N NaOH, 70 0C . Seven series detectors were exposed with the sources: B(n,a)Li, Am-241, Pu-Be(n,p), Radon and Am-Cm-Pu. Following parameters of exposed detectors were measured: track density of different sorts of tracks (circular, elliptical, track overlapping, their diameters, major and minor axis and other). (authors)

  18. A novel enhanced calibration method for DSSSD detectors

    Energy Technology Data Exchange (ETDEWEB)

    Kaya, Levent; Vogt, Andreas; Reiter, Peter; Birkenbach, Benedikt; Hirsch, Rouven; Seidlitz, Michael; Warr, Nigel [Institut fuer Kernphysik, Universitaet zu Koeln (Germany)

    2016-07-01

    Double-sided silicon strip detectors (DSSSD) are employed for the detection of charged particles in low-energy nuclear physics providing position and energy information for the impinging particle. Intersecting areas of both p- and n-side strips form individual pixel segments allowing for a high detector granularity. However, due to limitation in fabrication and the response of readout electronics, the performance of different channels may vary. In order to achieve best energy information, a calibration of each p- and n-side strip with a very high precision is mandatory. DSSSD responses are analyzed employing energy correlation matrices between adjacent strips in order to determine charge-sharing and energy-loss effects. A novel calibration method is based on the fact that each event is registered simultaneously on the p- and n-side strips. A two-dimensional calibration procedure allows for a significant enhancement of the energy resolution. In this way, the performance of DSSSDs with position-dependent radiation damage is improved clearly by excluding locally damaged detector areas without losing the information of complete p- or n-side strips.

  19. UV photo-detector based on p-NiO thin film/n-ZnO nanorods heterojunction prepared by a simple process

    International Nuclear Information System (INIS)

    Echresh, Ahmad; Chey, Chan Oeurn; Zargar Shoushtari, Morteza; Khranovskyy, Volodymyr; Nur, Omer; Willander, Magnus

    2015-01-01

    Highlights: • The p-NiO/n-ZnO heterojunction showed an obvious rectifying behavior and the response of the diode was excellent in generating photocurrent upon UV illumination. • Diode electrical performance presented here were superior to those achieved from similar heterojunction prepared by different methods. • The XPS results show that the heterojunction has a type-II band alignment with a valence band offset of 1.50 eV and conduction band offset of 1.83 eV. - Abstract: A UV photo-detector based on p-NiO thin film/n-ZnO nanorods heterojunction was fabricated using a simple two-step fabrication process. The aqueous chemical hydrothermal and thermal evaporation methods were combined to grow the ZnO nanorods and the NiO thin film, respectively. Structural investigation indicated that well aligned ZnO nanorods with hexagonal face having a preferential orientation along the c-axis (0 0 2) have been achieved and that the NiO thin film is covering all the ZnO nanorods. X-ray photoelectron spectroscopy (XPS) was used to investigate the band alignment of the heterojunction and the valence and the conduction band offsets were determined to be 1.50 eV and 1.83 eV, respectively. The current–voltage characteristics of the p-NiO thin film/ZnO nanorods heterojunction showed a clear rectifying behavior under both dark and UV illumination conditions. The response of the heterojunction diode was excellent regarding the photocurrent generation. Although other similar heterojunction diodes demonstrated lower threshold voltage, the rectification ratio and the sensitivity of the fabricated diode were superior in comparison to other similar heterojunctions reported recently, implying the vitality of the presented two-step process

  20. Clinical relevance of n-isopropyl-(/sup 123/I)p-iodoamphetamine (IMP) SPECT brain imaging

    International Nuclear Information System (INIS)

    Podreka, I.; Holl, K.; Dal Bianco, P.; Goldenberg, G.; Wimberger, D.; Auff, E.; Brucke, T.

    1986-01-01

    SPECT studies of the brain were performed by means of N-isopropyl-(/sup 123/I)p-iodoamphertamine and a double head rotating scintillation camera. Energy spectra showed an increase of scattered radiation proportional to the geometrical resolution of the used Tc-collimators. This is due to the higher lead content and thin septa (septum-penetration of high energy photons of /sup 123/I, scattering in the crystal) of HRES or UHRES collimators. A LEAP collimator (14 mm FWHM resolution in the reconstructed image) is the most suitable one (sufficient resolution - relatively low scatter-fraction) for /sup 123/I labeled tracers. With a multiple window technique scatter correction was performed. The width and position of the scatter windows were estimated in phantom studies. Further steps of data processing (prereconstructional filtering, analytical attenuation compensation), leading to an improvement of the final set of cross sections, are described. Clinical cases (Alzheimers, Huntingtons, Parkinson disease, Moya Moya, stroke and partial complex seizures) and stimulation (acoustic memory tasks, visual stimulations) studies in normal volunteers are presented, and results are compared with PET-data known from recent literature