WorldWideScience

Sample records for oxides utilizing epitaxy

  1. Epitaxial growth of zigzag PtAu alloy surface on Au nano-pentagrams with enhanced Pt utilization and electrocatalytic performance toward ethanol oxidation reaction

    International Nuclear Information System (INIS)

    Du, Cheng; Gao, Xiaohui; Zhuang, Zhihua; Cheng, Chunfeng; Zheng, Fuqin; Li, Xiaokun; Chen, Wei

    2017-01-01

    Highlights: • PtAu nanoalloy surface is heteroepitaxially grown on the pre-synthesized Au nano-pentagrams. • The PtAu/Au nano-pentagrams exhibit excellent electrocatalytic activity for ethanol oxidation. • The charge transfer resistance of PtAu/Au is lower than that of commercial Pt/C. • The durability and anti-poisoning ability of PtAu/Au is much better than those of commercial Pt/C - Abstract: Improving Pt utilization is of fundamental importance for many significant processes in energy conversion, which is strongly dependent on the surface structure of used catalysts. Based on the traditional Pt-on-Au system which has been proved to be an ideal nanostructure for improving the catalytic activity and stability of Pt, and the recent follow-up studies on this system, we introduce here a new strategy for fabricating Pt surface with high-index facets over the Pt-on-Au system. To achieve this goal, we elaborately designed and fabricated a unique zigzag PtAu alloy nanosurface on Au nano-pentagrams (PtAu/Au NPs) through epitaxial growth of Pt along the high-index facets on the pre-synthesized Au nano-pentagrams. Owing to the surface electronic interaction between Au and Pt and the exposed high-index facets from the unique morphology of zigzag PtAu alloy nanosurface, the as-prepared PtAu/Au NPs exhibited excellent electrocatalytic performance toward ethanol oxidation reaction (EOR) in alkaline condition. The specific activity (8.3 mA cm"−"2) and mass activity (4.4 A mg"−"1) obtained from PtAu/Au NPs are about 5.2 and 5.5 times, respectively, higher than those from commercial Pt/C for EOR.

  2. Process for depositing an oxide epitaxially onto a silicon substrate and structures prepared with the process

    Science.gov (United States)

    McKee, Rodney A.; Walker, Frederick J.

    1993-01-01

    A process and structure involving a silicon substrate utilizes an ultra high vacuum and molecular beam epitaxy (MBE) methods to grow an epitaxial oxide film upon a surface of the substrate. As the film is grown, the lattice of the compound formed at the silicon interface becomes stabilized, and a base layer comprised of an oxide having a sodium chloride-type lattice structure grows epitaxially upon the compound so as to cover the substrate surface. A perovskite may then be grown epitaxially upon the base layer to render a product which incorporates silicon, with its electronic capabilities, with a perovskite having technologically-significant properties of its own.

  3. Epitaxial-graphene/graphene-oxide junction: an essential step towards epitaxial graphene electronics.

    Science.gov (United States)

    Wu, Xiaosong; Sprinkle, Mike; Li, Xuebin; Ming, Fan; Berger, Claire; de Heer, Walt A

    2008-07-11

    Graphene-oxide (GO) flakes have been deposited to bridge the gap between two epitaxial-graphene electrodes to produce all-graphene devices. Electrical measurements indicate the presence of Schottky barriers at the graphene/graphene-oxide junctions, as a consequence of the band gap in GO. The barrier height is found to be about 0.7 eV, and is reduced after annealing at 180 degrees C, implying that the gap can be tuned by changing the degree of oxidation. A lower limit of the GO mobility was found to be 850 cm2/V s, rivaling silicon. In situ local oxidation of patterned epitaxial graphene has been achieved.

  4. Deposition and characterisation of epitaxial oxide thin films for SOFCs

    KAUST Repository

    Santiso, José ; Burriel, Mó nica

    2010-01-01

    This paper reviews the recent advances in the use of thin films, mostly epitaxial, for fundamental studies of materials for solid oxide fuel cell (SOFC) applications. These studies include the influence of film microstructure, crystal orientation

  5. Epitaxy of Polar Oxides and Semiconductors

    Science.gov (United States)

    Shelton, Christopher Tyrel

    Integrating polar oxide materials with wide-bandgap nitride semiconductors offers the possibility of a tunable 2D carrier gas (2DCG) - provided defect densities are low and interfaces are abrupt. This dissertation investigates a portion of the synthesis science necessary to produce a "semiconductor-grade" interface between these highly dissimilar materials. A significant portion of this work is aligned with efforts to engineer a step-free GaN substrate to produce single in-plane oriented rocksalt oxide films. Initially, we explore the homoepitaxial MOCVD growth conditions necessary to produce highquality GaN films on ammonothermally grown substrates. Ammono substrates are only recently available for purchase and are the market leader in low-dislocation density material. Their novelty requires development of an understanding of morphology trade-offs in processing space. This includes preservation of the epi-polished surface in aggressive MOCVD environments and an understanding of the kinetic barriers affecting growth morphologies. Based on several factors, it was determined that GaN exhibits an 'uphill' diffusion bias that may likely be ascribed to a positive Ehrlich-Schwoebel (ES) barrier. This barrier should have a stabilizing effect against step-bunching but, for many growth conditions, regular step bunching was observed. One possible explanation for the step-bunching instability is the presence of impurities. Experimentally, conditions which incorporate more carbon into GaN homoepitaxial layers are correlated with step-bunching while conditions that suppress carbon produce bilayer stepped morphologies. These observations lead us to the conclusion that GaN homoepitaxial morphology is a competition between impurity induced step-bunching and a stabilizing diffusion bias due to a positive ES barrier. Application of the aforementioned homoepitaxial growth techniques to discrete substrate regions using selected- and confined area epitaxy (SAE,CAE) produces some

  6. Growth and properties of epitaxial iron oxide layers

    NARCIS (Netherlands)

    Voogt, F.C; Fujii, T; Hibma, T; Zhang, G.L.; Smulders, P.J M

    1996-01-01

    Epitaxial layers of iron oxides have been grown on a MgO(001) substrate by evaporating natural Fe or Fe-57 from Knudsen cells in the presence of a NO2 flow directed to the substrate. The resulting layers have been investigated in situ with LEED, RHEED, AES and XPS and ex situ with GEMS and ion beam

  7. Reclamation of a molecular beam epitaxy system and conversion for oxide epitaxy

    International Nuclear Information System (INIS)

    Carver, Alexander G.; Henderson, Walter; Doolittle, W. Alan

    2008-01-01

    An early 1980s vintage molecular beam epitaxy system, a Varian Gen II system, originally used for HgCdTe epitaxy, was converted into a system capable of growing thin-film complex metal oxides. The nature of some of the alternative oxides requires a thorough cleaning and, in some cases, complete replacement of system components. Details are provided regarding the chemistry of the etchants used, safety requirements for properly handling, and disposal of large quantities of etchants and etch by-products, and components that can be reused versus components that require replacement are given. Following the given procedures, an ultimate base pressure of 2x10 -10 Torr was obtained. Films grown in the system after reclamation contained no evidence of previously present materials down to the detection limit of secondary ion mass spectrometry

  8. Deposition and characterisation of epitaxial oxide thin films for SOFCs

    KAUST Repository

    Santiso, José

    2010-10-24

    This paper reviews the recent advances in the use of thin films, mostly epitaxial, for fundamental studies of materials for solid oxide fuel cell (SOFC) applications. These studies include the influence of film microstructure, crystal orientation and strain in oxide ionic conducting materials used as electrolytes, such as fluorites, and in mixed ionic and electronic conducting materials used as electrodes, typically oxides with perovskite or perovskite-related layered structures. The recent effort towards the enhancement of the electrochemical performance of SOFC materials through the deposition of artificial film heterostructures is also presented. These thin films have been engineered at a nanoscale level, such as the case of epitaxial multilayers or nanocomposite cermet materials. The recent progress in the implementation of thin films in SOFC devices is also reported. © 2010 Springer-Verlag.

  9. Process for depositing epitaxial alkaline earth oxide onto a substrate and structures prepared with the process

    Science.gov (United States)

    McKee, Rodney A.; Walker, Frederick J.

    1996-01-01

    A process and structure involving a silicon substrate utilize molecular beam epitaxy (MBE) and/or electron beam evaporation methods and an ultra-high vacuum facility to grow a layup of epitaxial alkaline earth oxide films upon the substrate surface. By selecting metal constituents for the oxides and in the appropriate proportions so that the lattice parameter of each oxide grown closely approximates that of the substrate or base layer upon which oxide is grown, lattice strain at the film/film or film/substrate interface of adjacent films is appreciably reduced or relieved. Moreover, by selecting constituents for the oxides so that the lattice parameters of the materials of adjacent oxide films either increase or decrease in size from one parameter to another parameter, a graded layup of films can be grown (with reduced strain levels therebetween) so that the outer film has a lattice parameter which closely approximates that of, and thus accomodates the epitaxial growth of, a pervoskite chosen to be grown upon the outer film.

  10. The competing oxide and sub-oxide formation in metal-oxide molecular beam epitaxy

    International Nuclear Information System (INIS)

    Vogt, Patrick; Bierwagen, Oliver

    2015-01-01

    The hetero-epitaxial growth of the n-type semiconducting oxides β-Ga 2 O 3 , In 2 O 3 , and SnO 2 on c- and r-plane sapphire was performed by plasma-assisted molecular beam epitaxy. The growth-rate and desorbing flux from the substrate were measured in-situ under various oxygen to metal ratios by laser reflectometry and quadrupole mass spectrometry, respectively. These measurements clarified the role of volatile sub-oxide formation (Ga 2 O, In 2 O, and SnO) during growth, the sub-oxide stoichiometry, and the efficiency of oxide formation for the three oxides. As a result, the formation of the sub-oxides decreased the growth-rate under metal-rich growth conditions and resulted in etching of the oxide film by supplying only metal flux. The flux ratio for the exclusive formation of the sub-oxide (e.g., the p-type semiconductor SnO) was determined, and the efficiency of oxide formation was found to be the highest for SnO 2 , somewhat lower for In 2 O 3 , and the lowest for Ga 2 O 3 . Our findings can be generalized to further oxides that possess related sub-oxides

  11. Chemical gating of epitaxial graphene through ultrathin oxide layers.

    Science.gov (United States)

    Larciprete, Rosanna; Lacovig, Paolo; Orlando, Fabrizio; Dalmiglio, Matteo; Omiciuolo, Luca; Baraldi, Alessandro; Lizzit, Silvano

    2015-08-07

    We achieved a controllable chemical gating of epitaxial graphene grown on metal substrates by exploiting the electrostatic polarization of ultrathin SiO2 layers synthesized below it. Intercalated oxygen diffusing through the SiO2 layer modifies the metal-oxide work function and hole dopes graphene. The graphene/oxide/metal heterostructure behaves as a gated plane capacitor with the in situ grown SiO2 layer acting as a homogeneous dielectric spacer, whose high capacity allows the Fermi level of graphene to be shifted by a few hundreds of meV when the oxygen coverage at the metal substrate is of the order of 0.5 monolayers. The hole doping can be finely tuned by controlling the amount of interfacial oxygen, as well as by adjusting the thickness of the oxide layer. After complete thermal desorption of oxygen the intrinsic doping of SiO2 supported graphene is evaluated in the absence of contaminants and adventitious adsorbates. The demonstration that the charge state of graphene can be changed by chemically modifying the buried oxide/metal interface hints at the possibility of tuning the level and sign of doping by the use of other intercalants capable of diffusing through the ultrathin porous dielectric and reach the interface with the metal.

  12. Atomic layer epitaxy of hematite on indium tin oxide for application in solar energy conversion

    Science.gov (United States)

    Martinson, Alex B.; Riha, Shannon; Guo, Peijun; Emery, Jonathan D.

    2016-07-12

    A method to provide an article of manufacture of iron oxide on indium tin oxide for solar energy conversion. An atomic layer epitaxy method is used to deposit an uncommon bixbytite-phase iron (III) oxide (.beta.-Fe.sub.2O.sub.3) which is deposited at low temperatures to provide 99% phase pure .beta.-Fe.sub.2O.sub.3 thin films on indium tin oxide. Subsequent annealing produces pure .alpha.-Fe.sub.2O.sub.3 with well-defined epitaxy via a topotactic transition. These highly crystalline films in the ultra thin film limit enable high efficiency photoelectrochemical chemical water splitting.

  13. Epitaxial heterojunctions of oxide semiconductors and metals on high temperature superconductors

    Science.gov (United States)

    Vasquez, Richard P. (Inventor); Hunt, Brian D. (Inventor); Foote, Marc C. (Inventor)

    1994-01-01

    Epitaxial heterojunctions formed between high temperature superconductors and metallic or semiconducting oxide barrier layers are provided. Metallic perovskites such as LaTiO3, CaVO3, and SrVO3 are grown on electron-type high temperature superconductors such as Nd(1.85)Ce(0.15)CuO(4-x). Alternatively, transition metal bronzes of the form A(x)MO(3) are epitaxially grown on electron-type high temperature superconductors. Also, semiconducting oxides of perovskite-related crystal structures such as WO3 are grown on either hole-type or electron-type high temperature superconductors.

  14. Epitaxial thin film growth and properties of unconventional oxide superconductors. Cuprates and cobaltates

    International Nuclear Information System (INIS)

    Krockenberger, Y.

    2006-01-01

    The discovery of high-temperature superconductors has strongly driven the development of suited thin film fabrication methods of complex oxides. One way is the adaptation of molecular beam epitaxy (MBE) for the growth of oxide materials. Another approach is the use of pulsed laser deposition (PLD) which has the advantage of good stoichiometry transfer from target to the substrate. Both techniques are used within this thesis. Epitaxial thin films of new materials are of course needed for future applications. In addition, the controlled synthesis of thin film matter which can be formed far away from thermal equilibrium allows for the investigation of fundamental physical materials properties. (orig.)

  15. Epitaxial thin film growth and properties of unconventional oxide superconductors. Cuprates and cobaltates

    Energy Technology Data Exchange (ETDEWEB)

    Krockenberger, Y.

    2006-07-01

    The discovery of high-temperature superconductors has strongly driven the development of suited thin film fabrication methods of complex oxides. One way is the adaptation of molecular beam epitaxy (MBE) for the growth of oxide materials. Another approach is the use of pulsed laser deposition (PLD) which has the advantage of good stoichiometry transfer from target to the substrate. Both techniques are used within this thesis. Epitaxial thin films of new materials are of course needed for future applications. In addition, the controlled synthesis of thin film matter which can be formed far away from thermal equilibrium allows for the investigation of fundamental physical materials properties. (orig.)

  16. Electron molecular beam epitaxy: Layer-by-layer growth of complex oxides via pulsed electron-beam deposition

    International Nuclear Information System (INIS)

    Comes, Ryan; Liu Hongxue; Lu Jiwei; Gu, Man; Khokhlov, Mikhail; Wolf, Stuart A.

    2013-01-01

    Complex oxide epitaxial film growth is a rich and exciting field, owing to the wide variety of physical properties present in oxides. These properties include ferroelectricity, ferromagnetism, spin-polarization, and a variety of other correlated phenomena. Traditionally, high quality epitaxial oxide films have been grown via oxide molecular beam epitaxy or pulsed laser deposition. Here, we present the growth of high quality epitaxial films using an alternative approach, the pulsed electron-beam deposition technique. We demonstrate all three epitaxial growth modes in different oxide systems: Frank-van der Merwe (layer-by-layer); Stranski-Krastanov (layer-then-island); and Volmer-Weber (island). Analysis of film quality and morphology is presented and techniques to optimize the morphology of films are discussed.

  17. Atomic layer deposition of perovskite oxides and their epitaxial integration with Si, Ge, and other semiconductors

    Energy Technology Data Exchange (ETDEWEB)

    McDaniel, Martin D.; Ngo, Thong Q.; Hu, Shen; Ekerdt, John G., E-mail: ekerdt@utexas.edu [Department of Chemical Engineering, The University of Texas at Austin, Austin, Texas 78712 (United States); Posadas, Agham; Demkov, Alexander A. [Department of Physics, The University of Texas at Austin, Austin, Texas 78712 (United States)

    2015-12-15

    Atomic layer deposition (ALD) is a proven technique for the conformal deposition of oxide thin films with nanoscale thickness control. Most successful industrial applications have been with binary oxides, such as Al{sub 2}O{sub 3} and HfO{sub 2}. However, there has been much effort to deposit ternary oxides, such as perovskites (ABO{sub 3}), with desirable properties for advanced thin film applications. Distinct challenges are presented by the deposition of multi-component oxides using ALD. This review is intended to highlight the research of the many groups that have deposited perovskite oxides by ALD methods. Several commonalities between the studies are discussed. Special emphasis is put on precursor selection, deposition temperatures, and specific property performance (high-k, ferroelectric, ferromagnetic, etc.). Finally, the monolithic integration of perovskite oxides with semiconductors by ALD is reviewed. High-quality epitaxial growth of oxide thin films has traditionally been limited to physical vapor deposition techniques (e.g., molecular beam epitaxy). However, recent studies have demonstrated that epitaxial oxide thin films may be deposited on semiconductor substrates using ALD. This presents an exciting opportunity to integrate functional perovskite oxides for advanced semiconductor applications in a process that is economical and scalable.

  18. Atomic layer deposition of perovskite oxides and their epitaxial integration with Si, Ge, and other semiconductors

    International Nuclear Information System (INIS)

    McDaniel, Martin D.; Ngo, Thong Q.; Hu, Shen; Ekerdt, John G.; Posadas, Agham; Demkov, Alexander A.

    2015-01-01

    Atomic layer deposition (ALD) is a proven technique for the conformal deposition of oxide thin films with nanoscale thickness control. Most successful industrial applications have been with binary oxides, such as Al 2 O 3 and HfO 2 . However, there has been much effort to deposit ternary oxides, such as perovskites (ABO 3 ), with desirable properties for advanced thin film applications. Distinct challenges are presented by the deposition of multi-component oxides using ALD. This review is intended to highlight the research of the many groups that have deposited perovskite oxides by ALD methods. Several commonalities between the studies are discussed. Special emphasis is put on precursor selection, deposition temperatures, and specific property performance (high-k, ferroelectric, ferromagnetic, etc.). Finally, the monolithic integration of perovskite oxides with semiconductors by ALD is reviewed. High-quality epitaxial growth of oxide thin films has traditionally been limited to physical vapor deposition techniques (e.g., molecular beam epitaxy). However, recent studies have demonstrated that epitaxial oxide thin films may be deposited on semiconductor substrates using ALD. This presents an exciting opportunity to integrate functional perovskite oxides for advanced semiconductor applications in a process that is economical and scalable

  19. High-mobility BaSnO{sub 3} grown by oxide molecular beam epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Raghavan, Santosh; Schumann, Timo; Kim, Honggyu; Zhang, Jack Y.; Cain, Tyler A.; Stemmer, Susanne, E-mail: stemmer@mrl.ucsb.edu [Materials Department, University of California, Santa Barbara, California 93106-5050 (United States)

    2016-01-01

    High-mobility perovskite BaSnO{sub 3} films are of significant interest as new wide bandgap semiconductors for power electronics, transparent conductors, and as high mobility channels for epitaxial integration with functional perovskites. Despite promising results for single crystals, high-mobility BaSnO{sub 3} films have been challenging to grow. Here, we demonstrate a modified oxide molecular beam epitaxy (MBE) approach, which supplies pre-oxidized SnO{sub x}. This technique addresses issues in the MBE of ternary stannates related to volatile SnO formation and enables growth of epitaxial, stoichiometric BaSnO{sub 3}. We demonstrate room temperature electron mobilities of 150 cm{sup 2} V{sup −1} s{sup −1} in films grown on PrScO{sub 3}. The results open up a wide range of opportunities for future electronic devices.

  20. Process for growing a film epitaxially upon an oxide surface and structures formed with the process

    Science.gov (United States)

    McKee, Rodney A.; Walker, Frederick J.

    1995-01-01

    A process and structure wherein a film comprised of a perovskite or a spinel is built epitaxially upon a surface, such as an alkaline earth oxide surface, involves the epitaxial build up of alternating constituent metal oxide planes of the perovskite or spinel. The first layer of metal oxide built upon the surface includes a metal element which provides a small cation in the crystalline structure of the perovskite or spinel, and the second layer of metal oxide built upon the surface includes a metal element which provides a large cation in the crystalline structure of the perovskite or spinel. The layering sequence involved in the film build up reduces problems which would otherwise result from the interfacial electrostatics at the first atomic layers, and these oxides can be stabilized as commensurate thin films at a unit cell thickness or grown with high crystal quality to thicknesses of 0.5-0.7 .mu.m for optical device applications.

  1. Constructing oxide interfaces and heterostructures by atomic layer-by-layer laser molecular beam epitaxy

    OpenAIRE

    Lei, Qingyu; Golalikhani, Maryam; Davidson, Bruce A.; Liu, Guozhen; Schlom, D. G.; Qiao, Qiao; Zhu, Yimei; Chandrasena, Ravini U.; Yang, Weibing; Gray, Alexander X.; Arenholz, Elke; Farrar, Andrew K.; Tenne, Dmitri A.; Hu, Minhui; Guo, Jiandong

    2016-01-01

    Advancements in nanoscale engineering of oxide interfaces and heterostructures have led to discoveries of emergent phenomena and new artificial materials. Combining the strengths of reactive molecular-beam epitaxy and pulsed-laser deposition, we show here, with examples of Sr1+xTi1-xO3+delta, Ruddlesden-Popper phase Lan+1NinO3n+1 (n = 4), and LaAl1+yO3(1+0.5y)/SrTiO3 interfaces, that atomic layer-by-layer laser molecular-beam epitaxy (ALL-Laser MBE) significantly advances the state of the art...

  2. Crossover from incoherent to coherent phonon scattering in epitaxial oxide superlattices.

    Science.gov (United States)

    Ravichandran, Jayakanth; Yadav, Ajay K; Cheaito, Ramez; Rossen, Pim B; Soukiassian, Arsen; Suresha, S J; Duda, John C; Foley, Brian M; Lee, Che-Hui; Zhu, Ye; Lichtenberger, Arthur W; Moore, Joel E; Muller, David A; Schlom, Darrell G; Hopkins, Patrick E; Majumdar, Arun; Ramesh, Ramamoorthy; Zurbuchen, Mark A

    2014-02-01

    Elementary particles such as electrons or photons are frequent subjects of wave-nature-driven investigations, unlike collective excitations such as phonons. The demonstration of wave-particle crossover, in terms of macroscopic properties, is crucial to the understanding and application of the wave behaviour of matter. We present an unambiguous demonstration of the theoretically predicted crossover from diffuse (particle-like) to specular (wave-like) phonon scattering in epitaxial oxide superlattices, manifested by a minimum in lattice thermal conductivity as a function of interface density. We do so by synthesizing superlattices of electrically insulating perovskite oxides and systematically varying the interface density, with unit-cell precision, using two different epitaxial-growth techniques. These observations open up opportunities for studies on the wave nature of phonons, particularly phonon interference effects, using oxide superlattices as model systems, with extensive applications in thermoelectrics and thermal management.

  3. The origin of local strain in highly epitaxial oxide thin films.

    Science.gov (United States)

    Ma, Chunrui; Liu, Ming; Chen, Chonglin; Lin, Yuan; Li, Yanrong; Horwitz, J S; Jiang, Jiechao; Meletis, E I; Zhang, Qingyu

    2013-10-31

    The ability to control the microstructures and physical properties of hetero-epitaxial functional oxide thin films and artificial structures is a long-sought goal in functional materials research. Normally, only the lattice misfit between the film and the substrate is considered to govern the physical properties of the epitaxial films. In fact, the mismatch of film unit cell arrangement and the Surface-Step-Terrace (SST) dimension of the substrate, named as "SST residual matching", is another key factor that significantly influence the properties of the epitaxial film. The nature of strong local strain induced from both lattice mismatch and the SST residual matching on ferroelectric (Ba,Sr)TiO3 and ferromagnetic (La,Ca)MnO3 thin films are systematically investigated and it is demonstrated that this combined effect has a dramatic impact on the physical properties of highly epitaxial oxide thin films. A giant anomalous magnetoresistance effect (~10(10)) was achieved from the as-designed vicinal surfaces.

  4. Atomic Layer Epitaxy of Superconducting Oxides and Heterostructures

    National Research Council Canada - National Science Library

    Chang, R

    1998-01-01

    ...) materials and insulating metal oxides. Improving the nature of such interfaces is a crucial barrier which must be surmounted before HTS materials can be successfully incorporated on a large scale into a myriad of advanced active...

  5. Chemical solution route to self-assembled epitaxial oxide nanostructures.

    Science.gov (United States)

    Obradors, X; Puig, T; Gibert, M; Queraltó, A; Zabaleta, J; Mestres, N

    2014-04-07

    Self-assembly of oxides as a bottom-up approach to functional nanostructures goes beyond the conventional nanostructure formation based on lithographic techniques. Particularly, chemical solution deposition (CSD) is an ex situ growth approach very promising for high throughput nanofabrication at low cost. Whereas strain engineering as a strategy to define nanostructures with tight control of size, shape and orientation has been widely used in metals and semiconductors, it has been rarely explored in the emergent field of functional complex oxides. Here we will show that thermodynamic modeling can be very useful to understand the principles controlling the growth of oxide nanostructures by CSD, and some attractive kinetic features will also be presented. The methodology of strain engineering is applied in a high degree of detail to form different sorts of nanostructures (nanodots, nanowires) of the oxide CeO2 with fluorite structure which then is used as a model system to identify the principles controlling self-assembly and self-organization in CSD grown oxides. We also present, more briefly, the application of these ideas to other oxides such as manganites or BaZrO3. We will show that the nucleation and growth steps are essentially understood and manipulated while the kinetic phenomena underlying the evolution of the self-organized networks are still less widely explored, even if very appealing effects have been already observed. Overall, our investigation based on a CSD approach has opened a new strategy towards a general use of self-assembly and self-organization which can now be widely spread to many functional oxide materials.

  6. Chemical solution deposition techniques for epitaxial growth of complex oxides

    NARCIS (Netherlands)

    ten Elshof, Johan E.; Koster, G.; Huijben, Mark; Rijnders, G.

    2015-01-01

    The chemical solution deposition (CSD) process is a wet-chemical process that is employed to fabricate a wide variety of amorphous and crystalline oxide thin films. This chapter describes the typical steps in a CSD process and their influence on the final microstructure and properties of films, and

  7. Molecular Beam Epitaxy of lithium niobium oxide multifunctional materials

    Science.gov (United States)

    Tellekamp, M. Brooks; Shank, Joshua C.; Doolittle, W. Alan

    2017-04-01

    The role of stoichiometry and growth temperature in the preferential nucleation of material phases in the Li-Nb-O family are explored yielding an empirical growth phase diagram. It is shown that while single parameter variation often produces multi-phase films, combining substrate temperature control with the previously published lithium flux limited growth allows the repeatable growth of high quality single crystalline films of many different oxide phases. Higher temperatures (800-1050 °C) than normally used in MBE were necessary to achieve high quality materials. At these temperatures the desorption of surface species is shown to play an important role in film composition. Using this method single phase films of NbO, NbO2, LiNbO2, Li3NbO4, LiNbO3, and LiNb3O8 have been achieved in the same growth system, all on c-plane sapphire. Finally, the future of these films in functional oxide heterostructures is briefly discussed.

  8. Temperature dependent diffusion and epitaxial behavior of oxidized Au/Ni/p-GaN ohmic contact

    International Nuclear Information System (INIS)

    Hu, C.Y.; Qin, Z.X.; Feng, Z.X.; Chen, Z.Z.; Ding, Z.B.; Yang, Z.J.; Yu, T.J.; Hu, X.D.; Yao, S.D.; Zhang, G.Y.

    2006-01-01

    The temperature dependent diffusion and epitaxial behavior of oxidized Au/Ni/p-GaN ohmic contact were studied with Rutherford backscattering spectroscopy/channeling (RBS/C) and synchrotron X-ray diffraction (XRD). It is found that the Au diffuses to the surface of p-GaN to form an epitaxial structure on p-GaN after annealing at 450 deg. C. At the same time, the O diffuses to the metal-semiconductor interface and forms NiO. Both of them are suggested to be responsible for the sharp decrease in the specific contact resistance (ρ c ) at 450 deg. C. At 500 deg. C, the epitaxial structure of Au develops further and the O also diffuses deeper into the interface. As a result, the ρ c reaches the lowest value at this temperature. However, when annealing temperature reaches 600 deg. C, part or all of the interfacial NiO is detached from the p-GaN and diffuses out, which cause the ρ c to increase greatly

  9. Magnetic structural effect (MSE in epitaxial films of cerium oxide and lanthanum zirconate

    Directory of Open Access Journals (Sweden)

    Fatima Kh. Chibirova

    2015-06-01

    Full Text Available Increasing the critical current density in the second generation high-temperature superconducting wires (2G HTS is the major challenge for researchers and manufacturers of 2G HTS wires all over the world. We proposed a new approach to increase the number of percolation paths for supercurrent, i.e. increasing the number of low angle grain boundaries (<5° in the epitaxial superconducting YBCO layer by magnetic structural processing (MSP of buffer layers. New experimental results have been presented on the application of MSP for improving the structure and increasing the texture sharpness of buffer in electrical conducting element of 2G HTS wire. The influence of MCO on the structural and textural properties has been investigated in a buffer consisting of epitaxial films of cerium oxide CeO2 and lanthanum zirconate La2Zr2O7 in the CeO2/4La2Zr2O7 architecture. The influence of the magnetic processing of the epitaxial La2Zr2O7 buffer film on the shape of grains has been found. An atomic force microscopical study has shown that after magnetic processing the shape of grains improved significantly. A multilayer CeO2/4La2Zr2O7 buffer each layer of which was processed in a magnetic field has a high degree of orientation: only one diffraction peak with (200 indexes is observed in the X-ray spectrum. The X-ray settings of the (200 diffraction peak indicate a well developed epitaxial structure of CeO2 and La2Zr2O7 layers. The texture of the buffer is by more than 2° sharper than that of the Ni–5 at% W substrate.

  10. Experimental investigations of superconductivity in quasi-two-dimensional epitaxial copper oxide superlattices and trilayers

    International Nuclear Information System (INIS)

    Lowndes, D.H.; Norton, D.P.

    1993-01-01

    Epitaxial trilayer and superlattice structures grown by pulsed laser ablation have been used to study the superconducting-to-normal transition of ultrathin (one and two c-axis unit cells) YBa 2 Cu 3 O 7-x layers. The normalized flux-flow resistances for several epitaxial structures containing two-cell-thick YBa 2 Cu 3 O 7-x films collapse onto the ''universal'' curve of the Ginzburg-Landau Coulomb Gas (GLCG) model. Analysis of normalized resistance data for a series of superlattices containing one-cell-thick YBa 2 Cu 3 O 7-x layers also is consistent with the behavior expected for quasi-two-dimensional layers in a highly anisotropic, layered three-dimensional superconductor. Current-voltage measurements for one of the trilayer structures also are consistent with the normalized resistance data, and with the GLCG model. Scanning tunneling microscopy, transmission electron microscopy, and electrical transport studies show that growth-related steps in ultrathin YBa 2 Cu 3 O 7-x layers affect electrical continuity over macroscopic distances, acting as weak links. However , the perturbation of the superconducting order parameter can be minimized by utilizing hole-doped buffer and cap layers, on both sides of the YBa 2 Cu 3 O 7-x layer, in trilayers and superlattices. These results demonstrate the usefulness of epitaxial trilayer and superlattice structures as tools for systematic, fundamental studies of high-temperature superconductivity

  11. In situ surface/interface x-ray diffractometer for oxide molecular beam epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Lee, J. H.; Freeland, J. W.; Hong, Hawoong, E-mail: hhong@aps.anl.gov [Advanced Photon Source, Argonne National Laboratory, Argonne, Illinois 60439 (United States); Tung, I. C. [Advanced Photon Source, Argonne National Laboratory, Argonne, Illinois 60439 (United States); Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208 (United States); Chang, S.-H.; Bhattacharya, A.; Fong, D. D. [Materials Science Division, Argonne National Laboratory, Argonne, Illinois 60439 (United States)

    2016-01-15

    In situ studies of oxide molecular beam epitaxy by synchrotron x-ray scattering has been made possible by upgrading an existing UHV/molecular beam epitaxy (MBE) six-circle diffractometer system. For oxide MBE growth, pure ozone delivery to the chamber has been made available, and several new deposition sources have been made available on a new 12 in. CF (ConFlat, a registered trademark of Varian, Inc.) flange. X-ray diffraction has been used as a major probe for film growth and structures for the system. In the original design, electron diffraction was intended for the secondary diagnostics available without the necessity of the x-ray and located at separate positions. Deposition of films was made possible at the two diagnostic positions. And, the aiming of the evaporation sources is fixed to the point between two locations. Ozone can be supplied through two separate nozzles for each location. Also two separate thickness monitors are installed. Additional features of the equipment are also presented together with the data taken during typical oxide film growth to illustrate the depth of information available via in situ x-ray techniques.

  12. In situ surface/interface x-ray diffractometer for oxide molecular beam epitaxy

    International Nuclear Information System (INIS)

    Lee, J. H.; Freeland, J. W.; Hong, Hawoong; Tung, I. C.; Chang, S.-H.; Bhattacharya, A.; Fong, D. D.

    2016-01-01

    In situ studies of oxide molecular beam epitaxy by synchrotron x-ray scattering has been made possible by upgrading an existing UHV/molecular beam epitaxy (MBE) six-circle diffractometer system. For oxide MBE growth, pure ozone delivery to the chamber has been made available, and several new deposition sources have been made available on a new 12 in. CF (ConFlat, a registered trademark of Varian, Inc.) flange. X-ray diffraction has been used as a major probe for film growth and structures for the system. In the original design, electron diffraction was intended for the secondary diagnostics available without the necessity of the x-ray and located at separate positions. Deposition of films was made possible at the two diagnostic positions. And, the aiming of the evaporation sources is fixed to the point between two locations. Ozone can be supplied through two separate nozzles for each location. Also two separate thickness monitors are installed. Additional features of the equipment are also presented together with the data taken during typical oxide film growth to illustrate the depth of information available via in situ x-ray techniques

  13. Morphology and grain structure evolution during epitaxial growth of Ag films on native-oxide-covered Si surface

    International Nuclear Information System (INIS)

    Hur, Tae-Bong; Kim, Hong Koo; Perello, David; Yun, Minhee; Kulovits, Andreas; Wiezorek, Joerg

    2008-01-01

    Epitaxial nanocrystalline Ag films were grown on initially native-oxide-covered Si(001) substrates using radio-frequency magnetron sputtering. Mechanisms of grain growth and morphology evolution were investigated. An epitaxially oriented Ag layer (∼5 nm thick) formed on the oxide-desorbed Si surface during the initial growth phase. After a period of growth instability, characterized as kinetic roughening, grain growth stagnation, and increase of step-edge density, a layer of nanocrystalline Ag grains with a uniform size distribution appeared on the quasi-two-dimensional layer. This hierarchical process of film formation is attributed to the dynamic interplay between incoming energetic Ag particles and native oxide. The cyclic interaction (desorption and migration) of the oxide with the growing Ag film is found to play a crucial role in the characteristic evolution of grain growth and morphology change involving an interval of grain growth stagnation

  14. Properties of ion implanted epitaxial CoSi2/Si(1 0 0) after rapid thermal oxidation

    International Nuclear Information System (INIS)

    Zhao, Q.T.; Kluth, P.; Xu, J.; Kappius, L.; Zastrow, U.; Wang, Z.L.; Mantl, S.

    2000-01-01

    Epitaxial CoSi 2 layers were grown on Si(1 0 0) using molecular beam allotaxy. Boron ion implantations and rapid thermal oxidation (RTO) were performed. During oxidation, SiO 2 formed on the surface of the CoSi 2 layers, and the silicides was pushed into the substrate. The diffusion of boron was slightly retarded during oxidation for the specimen with a 20 nm epitaxial CoSi 2 capping layer as compared to the specimen without CoSi 2 capping layer. The electrical measurements showed that the silicide has good Schottky contacts with the boron doped silicon layer after RTO. A nanometer silicide patterning process, based on local oxidation of silicide (LOCOSI) layer, was also investigated. It shows two back-to-back Schottky diodes between the two separated parts of the silicide

  15. Modeling the transport properties of epitaxially grown thermoelectric oxide thin films using spectroscopic ellipsometry

    KAUST Repository

    Sarath Kumar, S. R.

    2012-02-01

    The influence of oxygen vacancies on the transport properties of epitaxial thermoelectric (Sr,La)TiO3 thin films is determined using electrical and spectroscopic ellipsometry (SE) measurements. Oxygen vacancy concentration was varied by ex-situ annealing in Ar and Ar/H2. All films exhibited degenerate semiconducting behavior, and electrical conductivity decreased (258–133 S cm−1) with increasing oxygen content. Similar decrease in the Seebeck coefficient is observed and attributed to a decrease in effective mass (7.8–3.2 me ), as determined by SE. Excellent agreement between transport properties deduced from SE and direct electrical measurements suggests that SE is an effective tool for studying oxide thin film thermoelectrics.

  16. Modeling the transport properties of epitaxially grown thermoelectric oxide thin films using spectroscopic ellipsometry

    KAUST Repository

    Sarath Kumar, S. R.; Abutaha, Anas I.; Hedhili, Mohamed N.; Alshareef, Husam N.

    2012-01-01

    The influence of oxygen vacancies on the transport properties of epitaxial thermoelectric (Sr,La)TiO3 thin films is determined using electrical and spectroscopic ellipsometry (SE) measurements. Oxygen vacancy concentration was varied by ex-situ annealing in Ar and Ar/H2. All films exhibited degenerate semiconducting behavior, and electrical conductivity decreased (258–133 S cm−1) with increasing oxygen content. Similar decrease in the Seebeck coefficient is observed and attributed to a decrease in effective mass (7.8–3.2 me ), as determined by SE. Excellent agreement between transport properties deduced from SE and direct electrical measurements suggests that SE is an effective tool for studying oxide thin film thermoelectrics.

  17. Crystallography and Growth of Epitaxial Oxide Films for Fundamental Studies of Cathode Materials Used in Advanced Li-Ion Batteries

    Directory of Open Access Journals (Sweden)

    Leonid A. Bendersky

    2017-05-01

    Full Text Available Li-ion battery systems, synthesized as epitaxial thin films, can provide powerful insights into their electrochemical processes. Crystallographic analysis shows that many important cathode oxides have an underlying similarity: their structures can be considered as different ordering schemes of Li and transition metal ions within a pseudo-cubic sublattice of oxygen anions arranged in a face-center cubic (FCC fashion. This oxygen sublattice is compatible with SrTiO3 and similar perovskite oxides, thus perovskites can be used as supporting substrates for growing epitaxial cathode films. The predicted epitaxial growth and crystallographic relations were experimentally verified for different oxide films deposited by pulsed laser deposition (PLD on SrTiO3 or SrRuO3/SrTiO3 of different orientations. The results based on cross-sectional high-resolution TEM of the following films are presented in the paper: (a trigonal LiCoO2; (b orthorhombic LiMnO2; (c monoclinic Li2MnO3; (d compositionally-complex monoclinic Li1.2Mn0.55Ni0.15Co0.1O2. All results demonstrated the feasibility of epitaxial growth for these materials, with the growth following the predicted cube-on-cube orientation relationship between the cubic and pseudo-cubic oxygen sublattices of a substrate and a film, respectively.

  18. Transparent conducting oxide clad limited area epitaxy semipolar III-nitride laser diodes

    KAUST Repository

    Myzaferi, A.

    2016-08-11

    The bottom cladding design of semipolar III-nitride laser diodes is limited by stress relaxation via misfit dislocations that form via the glide of pre-existing threading dislocations (TDs), whereas the top cladding is limited by the growth time and temperature of the p-type layers. These design limitations have individually been addressed by using limited area epitaxy (LAE) to block TD glide in n-type AlGaN bottom cladding layers and by using transparent conducting oxide (TCO) top cladding layers to reduce the growth time and temperature of the p-type layers. In addition, a TCO-based top cladding should have significantly lower resistivity than a conventional p-type (Al)GaN top cladding. In this work, LAE and indium-tin-oxide cladding layers are used simultaneously in a (202⎯⎯1) III-nitride laser structure. Lasing was achieved at 446 nm with a threshold current density of 8.5 kA/cm2 and a threshold voltage of 8.4 V.

  19. Solution-phase epitaxial growth of quasi-monocrystalline cuprous oxide on metal nanowires

    NARCIS (Netherlands)

    Sciacca, Beniamino; Mann, Sander A.; Tichelaar, Frans D.; Zandbergen, Henny W.; Van Huis, Marijn A.; Garnett, Erik C.

    2014-01-01

    The epitaxial growth of monocrystalline semiconductors on metal nanostructures is interesting from both fundamental and applied perspectives. The realization of nanostructures with excellent interfaces and material properties that also have controlled optical resonances can be very challenging. Here

  20. Self-planarized quantum-disks nanowires ultraviolet-B emitter utilizing pendeo-epitaxy

    KAUST Repository

    Janjua, Bilal

    2017-03-03

    The growth of self-assembled, vertically oriented and uniform nanowires (NWs) has remained a challenge for efficient light-emitting devices. Here, we demonstrate dislocation-free AlGaN NWs with spontaneous coalescence, which are grown by plasma-assisted molecular beam epitaxy on an n-type doped silicon (100) substrate. A high density of NWs (filling factor > 95%) was achieved under optimized growth conditions, enabling device fabrication without planarization using ultraviolet (UV)-absorbing polymer materials. UV-B (280-320 nm) light-emitting diodes (LEDs), which emit at ~303 nm with a narrow full width at half maximum (FWHM) (~20 nm) of the emission spectrum, are demonstrated using a large active region (“active region/NW length-ratio” ~ 50%) embedded with 15 stacks of AlxGa1-xN/AlyGa1-yN quantum-disks (Qdisks). To improve the carrier injection, a graded layer is introduced at the AlGaN/GaN interfaces on both p- and n-type regions. This work demonstrates a viable approach to easily fabricate ultra-thin, efficient UV optoelectronic devices on low-cost and scalable silicon substrates.

  1. Texture and microstructure analysis of epitaxial oxide layers prepared on textured Ni-12wt%Cr tapes

    Energy Technology Data Exchange (ETDEWEB)

    Huehne, R; Kursumovic, A; Tomov, R I; Glowacki, B A [Department of Materials Science and IRC in Superconductivity, University of Cambridge, Pembroke Street, Cambridge, CB2 3QZ (United Kingdom); Holzapfel, B [Institut fuer Festkoerper- und Werkstoffforschung, Helmholtzstrasse 20, 01069 Dresden (Germany); Evetts, J E [Department of Materials Science and IRC in Superconductivity, University of Cambridge, Pembroke Street, Cambridge, CB2 3QZ (United Kingdom)

    2003-05-07

    Oxide layers for the preparation of YBa{sub 2}Cu{sub 3}O{sub 7-x} coated conductors were grown on highly textured Ni-12wt%Cr tapes in pure oxygen using surface oxidation epitaxy at temperatures between 1000 deg. C and 1300 deg. C. Microstructural investigations revealed a layered oxide structure. The upper layer consists mainly of dense cube textured NiO. This is followed by a porous layer containing NiO and NiCr{sub 2}O{sub 4} particles. A detailed texture analysis showed a cube-on-cube relationship of the NiCr{sub 2}O{sub 4} spinel to the metal substrate. Untextured Cr{sub 2}O{sub 3} particles in a nickel matrix were found in a third layer arising from internal oxidation of the alloy. A high surface roughness and mechanical instability of the oxide were observed, depending on oxidation temperature and film thickness. However, mechanically stable oxide layers have been prepared using an additional annealing step in a protective atmosphere. Additionally, mechanical polishing or a second buffer layer, which grows with a higher smoothness, may be applied to reduce the surface roughness for coated conductor applications.

  2. Laser energy tuning of carrier effective mass and thermopower in epitaxial oxide thin films

    KAUST Repository

    Abutaha, Anas I.; Sarath Kumar, S. R.; Alshareef, Husam N.

    2012-01-01

    The effect of the laser fluence on high temperature thermoelectric properties of the La doped SrTiO3 (SLTO) thin films epitaxially grown on LaAlO3 〈100〉 substrates by pulsed laser deposition is clarified. It is shown that oxygen vacancies

  3. An epitaxial transparent conducting perovskite oxide: double-doped SrTiO3

    NARCIS (Netherlands)

    Ravichandran, Jayakanth; Siemons, W.; Heijmerikx, Herman; Huijben, Mark; Majumdar, Arun; Ramesh, Ramamoorthy

    2010-01-01

    Epitaxial thin films of strontium titanate doped with different concentrations of lanthanum and oxygen vacancies were grown on LSAT substrates by pulsed laser deposition technique. Films grown with 5−15% La doping and a critical growth pressure of 1−10 mTorr showed high transparency (>70−95%) in the

  4. Strain-Modulated Epitaxy

    National Research Council Canada - National Science Library

    Brown, April

    1999-01-01

    Strain-Modulated Epitaxy (SME) is a novel approach, invented at Georgia Tech, to utilize subsurface stressors to control strain and therefore material properties and growth kinetics in the material above the stressors...

  5. Structural evolution of epitaxial SrCoOx films near topotactic phase transition

    OpenAIRE

    Hyoungjeen Jeen; Ho Nyung Lee

    2015-01-01

    Control of oxygen stoichiometry in complex oxides via topotactic phase transition is an interesting avenue to not only modifying the physical properties, but utilizing in many energy technologies, such as energy storage and catalysts. However, detailed structural evolution in the close proximity of the topotactic phase transition in multivalent oxides has not been much studied. In this work, we used strontium cobaltites (SrCoOx) epitaxially grown by pulsed laser epitaxy (PLE) as a model syste...

  6. Fabrication of SGOI material by oxidation of an epitaxial SiGe layer on an SOI wafer with H ions implantation

    International Nuclear Information System (INIS)

    Cheng Xinli; Chen Zhijun; Wang Yongjin; Jin Bo; Zhang Feng; Zou Shichang

    2005-01-01

    SGOI materials were fabricated by thermal dry oxidation of epitaxial H-ion implanted SiGe layers on SOI wafers. The hydrogen implantation was found to delay the oxidation rate of SiGe layer and to decrease the loss of Ge atoms during oxidation. Further, the H implantation did not degrade the crystallinity of SiGe layer during fabrication of the SGOI

  7. Epitaxial growth of manganese oxide films on MgAl2O4 (001) substrates and the possible mechanism

    Science.gov (United States)

    Ren, Lizhu; Wu, Shuxiang; Zhou, Wenqi; Li, Shuwei

    2014-03-01

    Three types of manganese oxide films were grown on MgAl2O4 (001) substrates by plasma-assisted molecular beam epitaxy (PA-MBE) under different growth rates and substrate temperatures. The structural characteristics and chemical compositions of the films were investigated by using in-situ reflection high-energy electron diffraction (RHEED), ex-situ X-ray diffraction, Raman, and X-ray photoelectron spectra (XPS). At a lower substrate temperature (730 K), the epitaxial film tends to form mixed phases with a coexistence of Mn3O4 and Mn5O8 in order to relieve the mismatch-strain. However, at a higher substrate temperature (750 K), all of the films crystallize into Mn3O4; the critical thickness of the film grown under a lower growth rate (7 Å/min) is much larger than that under a high growth rate (10 Å/min). When the film reaches a certain critical thickness, the surface will become fairly rough, and another oriented phase Mn3O4 would crystallize on such a surface.

  8. Epitaxy-enabled vapor-liquid-solid growth of tin-doped indium oxide nanowires with controlled orientations

    KAUST Repository

    Shen, Youde

    2014-08-13

    Controlling the morphology of nanowires in bottom-up synthesis and assembling them on planar substrates is of tremendous importance for device applications in electronics, photonics, sensing and energy conversion. To date, however, there remain challenges in reliably achieving these goals of orientation-controlled nanowire synthesis and assembly. Here we report that growth of planar, vertical and randomly oriented tin-doped indium oxide (ITO) nanowires can be realized on yttria-stabilized zirconia (YSZ) substrates via the epitaxy-assisted vapor-liquid-solid (VLS) mechanism, by simply regulating the growth conditions, in particular the growth temperature. This robust control on nanowire orientation is facilitated by the small lattice mismatch of 1.6% between ITO and YSZ. Further control of the orientation, symmetry and shape of the nanowires can be achieved by using YSZ substrates with (110) and (111), in addition to (100) surfaces. Based on these insights, we succeed in growing regular arrays of planar ITO nanowires from patterned catalyst nanoparticles. Overall, our discovery of unprecedented orientation control in ITO nanowires advances the general VLS synthesis, providing a robust epitaxy-based approach toward rational synthesis of nanowires. © 2014 American Chemical Society.

  9. Controlling plasmonic properties of epitaxial thin films of indium tin oxide in the near-infrared region

    Science.gov (United States)

    Kamakura, R.; Fujita, K.; Murai, S.; Tanaka, K.

    2015-06-01

    Epitaxial thin films of indium tin oxide (ITO) were grown on yttria-stabilized zirconia single-crystal substrates by using a pulsed laser deposition to examine their plasmonic properties. The dielectric function of ITO was characterized by spectroscopic ellipsometry. Through the concentration of SnO2 in the target, the carrier concentration in the films was modified, which directly leads to the tuning of the dielectric function in the near-infrared region. Variable-angle reflectance spectroscopy in the Kretschmann geometry shows the dip in the reflection spectrum of p-polarized light corresponding to the excitation of surface plasmon polaritions (SPPs) in the near-infrared region. The excitation wavelength of the SPPs was shifted with changing the dielectric functions of ITO, which is reproduced by the calculation using transfer matrix method.

  10. Buffer-eliminated, charge-neutral epitaxial graphene on oxidized 4H-SiC (0001) surface

    International Nuclear Information System (INIS)

    Sirikumara, Hansika I.; Jayasekera, Thushari

    2016-01-01

    Buffer-eliminated, charge-neutral epitaxial graphene (EG) is important to enhance its potential in device applications. Using the first principles Density Functional Theory calculations, we investigated the effect of oxidation on the electronic and structural properties of EG on 4H-SiC (0001) surface. Our investigation reveals that the buffer layer decouples from the substrate in the presence of both silicate and silicon oxy-nitride at the interface, and the resultant monolayer EG is charge-neutral in both cases. The interface at 4H-SiC/silicate/EG is characterized by surface dangling electrons, which opens up another route for further engineering EG on 4H-SiC. Dangling electron-free 4H-SiC/silicon oxy-nitride/EG is ideal for achieving charge-neutral EG.

  11. VO2 Thermochromic Films on Quartz Glass Substrate Grown by RF-Plasma-Assisted Oxide Molecular Beam Epitaxy

    Directory of Open Access Journals (Sweden)

    Dong Zhang

    2017-03-01

    Full Text Available Vanadium dioxide (VO2 thermochromic thin films with various thicknesses were grown on quartz glass substrates by radio frequency (RF-plasma assisted oxide molecular beam epitaxy (O-MBE. The crystal structure, morphology and chemical stoichiometry were investigated systemically by X-ray diffraction (XRD, atomic force microscopy (AFM, Raman spectroscopy and X-ray photoelectron spectroscopy (XPS analyses. An excellent reversible metal-to-insulator transition (MIT characteristics accompanied by an abrupt change in both electrical resistivity and optical infrared (IR transmittance was observed from the optimized sample. Remarkably, the transition temperature (TMIT deduced from the resistivity-temperature curve was reasonably consistent with that obtained from the temperature-dependent IR transmittance. Based on Raman measurement and XPS analyses, the observations were interpreted in terms of residual stresses and chemical stoichiometry. This achievement will be of great benefit for practical application of VO2-based smart windows.

  12. Laser energy tuning of carrier effective mass and thermopower in epitaxial oxide thin films

    KAUST Repository

    Abutaha, Anas I.

    2012-04-18

    The effect of the laser fluence on high temperature thermoelectric properties of the La doped SrTiO3 (SLTO) thin films epitaxially grown on LaAlO3 〈100〉 substrates by pulsed laser deposition is clarified. It is shown that oxygen vacancies that influence the effective mass of carriers in SLTO films can be tuned by varying the laser energy. The highest power factor of 0.433 W K−1 m−1 has been achieved at 636 K for a filmdeposited using the highest laser fluence of 7 J cm−2 pulse−1.

  13. Strain induced room temperature ferromagnetism in epitaxial magnesium oxide thin films

    Energy Technology Data Exchange (ETDEWEB)

    Jin, Zhenghe; Kim, Ki Wook [Department of Electrical and Computer Engineering, North Carolina State University, Raleigh, North Carolina 27695 (United States); Nori, Sudhakar; Lee, Yi-Fang; Narayan, Jagdish [Department of Materials Science and Engineering, North Carolina State University, Raleigh, North Carolina 27695 (United States); Kumar, D. [Department of Mechanical Engineering, North Carolina A & T State University, Greensboro, North Carolina 27411 (United States); Wu, Fan [Princeton Institute for the Science and Technology of Materials (PRISM), Princeton University, Princeton, New Jersey 08540 (United States); Prater, J. T. [Materials Science Division, Army Research Office, Research Triangle Park, North Carolina 27709 (United States)

    2015-10-28

    We report on the epitaxial growth and room-temperature ferromagnetic properties of MgO thin films deposited on hexagonal c-sapphire substrates by pulsed laser deposition. The epitaxial nature of the films has been confirmed by both θ-2θ and φ-scans of X-ray diffraction pattern. Even though bulk MgO is a nonmagnetic insulator, we have found that the MgO films exhibit ferromagnetism and hysteresis loops yielding a maximum saturation magnetization up to 17 emu/cc and large coercivity, H{sub c} = 1200 Oe. We have also found that the saturation magnetization gets enhanced and that the crystallization degraded with decreased growth temperature, suggesting that the origin of our magnetic coupling could be point defects manifested by the strain in the films. X-ray (θ-2θ) diffraction peak shift and strain analysis clearly support the presence of strain in films resulting from the presence of point defects. Based on careful investigations using secondary ion mass spectrometer and X-ray photoelectron spectroscopy studies, we have ruled out the possibility of the presence of any external magnetic impurities. We discuss the critical role of microstructural characteristics and associated strain on the physical properties of the MgO films and establish a correlation between defects and magnetic properties.

  14. Avoiding polar catastrophe in the growth of polarly orientated nickel perovskite thin films by reactive oxide molecular beam epitaxy

    International Nuclear Information System (INIS)

    Yang, H. F.; Liu, Z. T.; Fan, C. C.; Xiang, P.; Zhang, K. L.; Li, M. Y.; Liu, J. S.; Yao, Q.; Shen, D. W.

    2016-01-01

    By means of the state-of-the-art reactive oxide molecular beam epitaxy, we synthesized (001)- and (111)-orientated polar LaNiO 3 thin films. In order to avoid the interfacial reconstructions induced by polar catastrophe, screening metallic Nb-doped SrTiO 3 and iso-polarity LaAlO 3 substrates were chosen to achieve high-quality (001)-orientated films in a layer-by-layer growth mode. For largely polar (111)-orientated films, we showed that iso-polarity LaAlO 3 (111) substrate was more suitable than Nb-doped SrTiO 3 . In situ reflection high-energy electron diffraction, ex situ high-resolution X-ray diffraction, and atomic force microscopy were used to characterize these films. Our results show that special attentions need to be paid to grow high-quality oxide films with polar orientations, which can prompt the explorations of all-oxide electronics and artificial interfacial engineering to pursue intriguing emergent physics like proposed interfacial superconductivity and topological phases in LaNiO 3 based superlattices.

  15. Epitaxial growth of CZT(S,Se) on silicon

    Science.gov (United States)

    Bojarczuk, Nestor A.; Gershon, Talia S.; Guha, Supratik; Shin, Byungha; Zhu, Yu

    2016-03-15

    Techniques for epitaxial growth of CZT(S,Se) materials on Si are provided. In one aspect, a method of forming an epitaxial kesterite material is provided which includes the steps of: selecting a Si substrate based on a crystallographic orientation of the Si substrate; forming an epitaxial oxide interlayer on the Si substrate to enhance wettability of the epitaxial kesterite material on the Si substrate, wherein the epitaxial oxide interlayer is formed from a material that is lattice-matched to Si; and forming the epitaxial kesterite material on a side of the epitaxial oxide interlayer opposite the Si substrate, wherein the epitaxial kesterite material includes Cu, Zn, Sn, and at least one of S and Se, and wherein a crystallographic orientation of the epitaxial kesterite material is based on the crystallographic orientation of the Si substrate. A method of forming an epitaxial kesterite-based photovoltaic device and an epitaxial kesterite-based device are also provided.

  16. Ultra-smooth epitaxial Ge grown on Si(001) utilizing a thin C-doped Ge buffer layer

    KAUST Repository

    Mantey, J.; Hsu, W.; James, J.; Onyegam, E. U.; Guchhait, S.; Banerjee, S. K.

    2013-01-01

    Here, we present work on epitaxial Ge films grown on a thin buffer layer of C doped Ge (Ge:C). The growth rate of Ge:C is found to slow over time and is thus unsuitable for thick (>20 nm) layers. We demonstrate Ge films from 10 nm to >150 nm

  17. Near-surface effects of transient oxidation and reduction on Nb-doped SrTiO3 epitaxial thin films

    Science.gov (United States)

    Chang, C. F.; Chen, Q. Y.; Wadekar, P. V.; Lozano, O.; Wong, M. S.; Hsieh, W. C.; Lin, W. Y.; Ko, H. H.; Lin, Q. J.; Huang, H. C.; Ho, N. J.; Tu, L. W.; Liao, H. H.; Chinta, P. V.; Chu, W. K.; Seo, H. W.

    2014-03-01

    We studied the effects of transient oxidation and reduction of Nb-doped epitaxial thin films through variations of PAr and PO2. The samples were prepared by co-sputtering of Nb and SrTiO3 on LaAlO3 substrates. The Nb-content were varied from 0-33.7%, as determined by PIXE. Contact resistance, sheet resistance, and optical properties are used to discriminate the effects.

  18. Comparative study of LaNiO$_3$/LaAlO$_3$ heterostructures grown by pulsed laser deposition and oxide molecular beam epitaxy

    OpenAIRE

    Wrobel, F.; Mark, A. F.; Christiani, G.; Sigle, W.; Habermeier, H. -U.; van Aken, P. A.; Logvenov, G.; Keimer, B.; Benckiser, E.

    2017-01-01

    Variations in growth conditions associated with different deposition techniques can greatly affect the phase stability and defect structure of complex oxide heterostructures. We synthesized superlattices of the paramagnetic metal LaNiO3 and the large band gap insulator LaAlO3 by atomic layer-by-layer molecular beam epitaxy (MBE) and pulsed laser deposition (PLD) and compared their crystallinity, microstructure as revealed by high-resolution transmission electron microscopy images and resistiv...

  19. Defect mediated reversible ferromagnetism in Co and Mn doped zinc oxide epitaxial films

    Energy Technology Data Exchange (ETDEWEB)

    Mal, Siddhartha; Nori, Sudhakar; Narayan, J. [Department of Material Science and Engineering, North Carolina State University, Raleigh, North Carolina 27695 (United States); Mula, Suhrit [Department of Material Science and Engineering, North Carolina State University, Raleigh, North Carolina 27695 (United States); Department of Metallurgical and Materials Engineering, National Institute of Technology, Rourkela 769008 (India); Prater, J. T. [Materials Science Division, Army Research Office, Research Triangle Park, North Carolina 27709 (United States)

    2012-12-01

    We have introduced defects in ZnO (undoped and doped with Co and Mn) epitaxial thin films using laser irradiation from nanosecond laser pulses and thermal annealing in oxygen ambient. In contrast to the as grown samples, the laser irradiated films show a significant increase in conductivity, enhancement in UV emission, while maintaining the same wurtzite crystal structure. Room-temperature ferromagnetism (RTFM) is observed in laser-irradiated samples, which increased with the number of laser pulses up to a certain value where magnetic moment saturates. The induced ferromagnetism as well as the enhanced electrical conductivity can be reversed with thermal annealing in oxygen ambient. The magnetization in Co and Mn doped films was found to be strong function of growth conditions and defect concentration. X-ray diffraction and optical absorption experiments suggested a 2+ valance state and tetrahedral coordination for both Co and Mn ions. There is a simultaneous increase in n-type electrical conductivity with the number of laser pulses and continue to exhibit semiconducting behavior in both undoped and doped films. The saturation magnetization was found to be 0.08 {mu}{sub B}/Co and 0.05 {mu}{sub B}/Mn, much lower than 3.0 {mu}{sub B}/Co and 5.0 {mu}{sub B}/Mn, indicating the prominent role of intrinsic defects in RTFM with some contribution from Co{sup 2+}-oxygen vacancy complexes. We propose a unified mechanism based upon introduction of intrinsic defects to explain RTFM and n-type conductivity enhancements during pulsed laser and thermal annealing.

  20. Molecular beam epitaxy of InN layers on Sapphire, GaN and indium tin oxide

    Energy Technology Data Exchange (ETDEWEB)

    Denker, Christian; Landgraf, Boris; Schuhmann, Henning; Malindretos, Joerg; Seibt, Michael; Rizzi, Angela [IV. Physikalisches Institut, Georg-August-Universitaet Goettingen (Germany); Segura-Ruiz, Jaime; Gomez-Gomez, Maribel; Cantarero, Andres [Materials Science Institute, University of Valencia, Paterna (Spain)

    2009-07-01

    Among the group-III nitrides semiconductors, InN is the one with the narrowest gap (0.67 eV), lowest effective electron mass and highest peak drift velocity. It is therefore a very interesting material for several applications, in particular semiconductor solar cells. Furthermore, the high electron affinity makes it suitable also as electrode material for organic solar cells. InN layers were grown by molecular beam epitaxy on MOCVD GaN templates, on bare c-plane sapphire and on polycrystalline indium tin oxide. On all substrates the III-V ratio as well as the substrate temperature was varied. A RHEED analysis of InN growth on GaN showed a relatively sharp transition from N-rich and columnar growth to In-rich growth with droplet formation by increasing the In flux impinging on the surface. The InN layers on single crystalline substrates were characterized by SEM, AFM, XRD, PL and Raman. The InN layers on ITO were mainly analyzed with respect to the surface morphology with SEM. HRTEM in cross section gives insight into the structure of the interface to the ITO substrate.

  1. Growth of epitaxially oriented Ag nanoislands on air-oxidized Si(1 1 1)-(7 × 7) surfaces: Influence of short-range order on the substrate

    International Nuclear Information System (INIS)

    Roy, Anupam; Bhattacharjee, K.; Ghatak, J.; Dev, B.N.

    2012-01-01

    Clean Si(1 1 1)-(7 × 7) surfaces, followed by air-exposure, have been investigated by reflection high-energy electron diffraction (RHEED) and scanning tunneling microscopy (STM). Fourier transforms (FTs) of STM images show the presence of short-range (7 × 7) order on the air-oxidized surface. Comparison with FTs of STM images from a clean Si(1 1 1)-(7 × 7) surface shows that only the 1/7th order spots are present on the air-oxidized surface. The oxide layer is ∼2-3 nm thick, as revealed by cross-sectional transmission electron microscopy (XTEM). Growth of Ag islands on these air-oxidized Si(1 1 1)-(7 × 7) surfaces has been investigated by in situ RHEED and STM and ex situ XTEM and scanning electron microscopy. Ag deposition at room temperature leads to the growth of randomly oriented Ag islands while preferred orientation evolves when Ag is deposited at higher substrate temperatures. For deposition at 550 °C face centered cubic Ag nanoislands grow with a predominant epitaxial orientation [11 ¯ 0] Ag ||[11 ¯ 0] Si , (1 1 1) Ag || (1 1 1) Si along with its twin [1 ¯ 10] Ag ||[11 ¯ 0] Si , (1 1 1) Ag || (1 1 1) Si , as observed for epitaxial growth of Ag on Si(1 1 1) surfaces. The twins are thus rotated by a 180° rotation of the Ag unit cell about the Si[1 1 1] axis. It is intriguing that Ag nanoislands follow an epitaxial relationship with the Si(1 1 1) substrate in spite of the presence of a 2-3 nm thick oxide layer between Ag and Si. Apparently the short-range order on the oxide surface influences the crystallographic orientation of the Ag nanoislands.

  2. Molecular beam epitaxy growth of niobium oxides by solid/liquid state oxygen source and lithium assisted metal-halide chemistry

    Science.gov (United States)

    Tellekamp, M. Brooks; Greenlee, Jordan D.; Shank, Joshua C.; Doolittle, W. Alan

    2015-09-01

    In order to consistently grow high quality niobium oxides and lithium niobium oxides, a novel solid/liquid state oxygen source, LiClO4, has been implemented in a molecular beam epitaxy (MBE) system. LiClO4 is shown to decompose into both molecular and atomic oxygen upon heating. This allows oxidation rates similar to that of molecular oxygen but at a reduced overall beam flux, quantified by in situ Auger analysis. LiClO4 operation is decomposition limited to less than 400 °C, and other material limitations are identified. The design of a custom near-ambient NbCl5 effusion cell is presented, which improves both short and long term stability. Films of Nb oxidation state +2, +3, and +5 are grown using these new tools, including the multi-functional sub-oxide LiNbO2.

  3. Epitaxial Sb-doped SnO_2 and Sn-doped In_2O_3 transparent conducting oxide contacts on GaN-based light emitting diodes

    International Nuclear Information System (INIS)

    Tsai, Min-Ying; Bierwagen, Oliver; Speck, James S.

    2016-01-01

    We demonstrate the growth of epitaxial (100)-oriented, rutile Sb-doped SnO_2 (ATO) and (111)-oriented, cubic Sn-doped In_2O_3 (ITO) transparent conducting oxide (TCO) contacts on top of an InGaN/GaN(0001) light emitting diode (LED) by plasma-assisted molecular beam epitaxy (PAMBE). Both oxides form rotational domains. The in-plane epitaxial alignment of the two ITO(111) rotational domains to the GaN(0001) was: GaN [21-10]|| ITO_D_o_m_a_i_n_1[‐ 211]|| ITO_D_o_m_a_i_n_2[‐ 1‐12]. A growth temperature as low as 600 °C was necessary to realize a low contact resistance between ATO and the top p-GaN layer of the LED but resulted in non-optimal resistivity (3.4 × 10"− "3 Ω cm) of the ATO. The current–voltage characteristics of a processed LED, however, were comparable to that of a reference LED with a standard electron-beam evaporated ITO top contact. At short wavelengths, the optical absorption of ATO was lower than that of ITO, which is beneficial even for blue LEDs. Higher PAMBE growth temperatures resulted in lower resistive ATO but higher contact resistance to the GaN, likely by the formation of an insulating Ga_2O_3 interface layer. The ITO contact grown by PAMBE at 600 °C showed extremely low resistivity (10"−"4 Ω cm) and high crystalline and morphological quality. These proof-of-principle results may lead to the development of epitaxial TCO contacts with low resistivity, well-defined interfaces to the p-GaN to help minimize contact losses, and enable further epitaxy on top of the TCO. - Highlights: • Plasma-assisted molecular beam epitaxy of SnO_2:Sb (ATO) and In_2O_3:Sn (ITO) contacts • Working light emitting diodes processed with the ATO contact on the top p-GaN layer • Low growth temperature ensures low contact resistance (limiting interface reaction). • ITO showed significantly better structural and transport properties than ATO. • ATO showed higher optical transmission at short wavelengths than ITO.

  4. Approach to Multifunctional Device Platform with Epitaxial Graphene on Transition Metal Oxide (Postprint)

    Science.gov (United States)

    2015-09-23

    layers, respectively. 15. SUBJECT TERMS Heterostructures, two-dimensional materials, van der Waals interaction , 2D graphene, metal oxide (TiO2...sample holder with a 10.6 μ m CO2 IR laser . The laser output power was adjusted until the target temperature was reached. The temperature of the sample... Laser Deposited Transition- Metal Carbides for Field-Emission Cathode Coatings. ACS Appl. Mater. Interfaces 5, 9241–9246 (2013). 13. Swift, G. A

  5. Epitaxial Lift-Off of Centimeter-Scaled Spinel Ferrite Oxide Thin Films for Flexible Electronics.

    Science.gov (United States)

    Shen, Lvkang; Wu, Liang; Sheng, Quan; Ma, Chunrui; Zhang, Yong; Lu, Lu; Ma, Ji; Ma, Jing; Bian, Jihong; Yang, Yaodong; Chen, Aiping; Lu, Xiaoli; Liu, Ming; Wang, Hong; Jia, Chun-Lin

    2017-09-01

    Mechanical flexibility of electronic devices has attracted much attention from research due to the great demand in practical applications and rich commercial value. Integration of functional oxide materials in flexible polymer materials has proven an effective way to achieve flexibility of functional electronic devices. However, the chemical and mechanical incompatibilities at the interfaces of dissimilar materials make it still a big challenge to synthesize high-quality single-crystalline oxide thin film directly on flexible polymer substrates. This study reports an improved method that is employed to successfully transfer a centimeter-scaled single-crystalline LiFe 5 O 8 thin film on polyimide substrate. Structural characterizations show that the transferred films have essentially no difference in comparison with the as-grown films with respect to the microstructure. In particular, the transferred LiFe 5 O 8 films exhibit excellent magnetic properties under various mechanical bending statuses and show excellent fatigue properties during the bending cycle tests. These results demonstrate that the improved transfer method provides an effective way to compose single-crystalline functional oxide thin films onto flexible substrates for applications in flexible and wearable electronics. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  6. Catalytic Activity Enhancement for Oxygen Reduction on Epitaxial Perovskite Thin Films for Solid-Oxide Fuel Cells

    KAUST Repository

    la O', Gerardo Jose; Ahn, Sung-Jin; Crumlin, Ethan; Orikasa, Yuki; Biegalski, Michael D.; Christen, Hans M.; Shao-Horn, Yang

    2010-01-01

    Figure Presented The active ingredient: La0.8Sr 0.2CoO3-δ (LSC) epitaxial thin films are prepared on (001 )-oriented yttria-stabilized zirconia (YSZ) single crystals with a gadolinium-doped ceria (GDC) buffer layer (see picture). The LSC epitaxial films exhibit better oxygen reduction kinetics than bulk LSC. The enhanced activity is attributed in part to higher oxygen nonstoichiometry. © 2010 Wiley-VCH Verlag GmbH & Co. KCaA, Weinheim.

  7. Catalytic Activity Enhancement for Oxygen Reduction on Epitaxial Perovskite Thin Films for Solid-Oxide Fuel Cells

    KAUST Repository

    la O', Gerardo Jose

    2010-06-22

    Figure Presented The active ingredient: La0.8Sr 0.2CoO3-δ (LSC) epitaxial thin films are prepared on (001 )-oriented yttria-stabilized zirconia (YSZ) single crystals with a gadolinium-doped ceria (GDC) buffer layer (see picture). The LSC epitaxial films exhibit better oxygen reduction kinetics than bulk LSC. The enhanced activity is attributed in part to higher oxygen nonstoichiometry. © 2010 Wiley-VCH Verlag GmbH & Co. KCaA, Weinheim.

  8. Aspects of 'low field' magnetotransport in epitaxial thin films of the ferromagnetic metallic oxide SrRuO3

    International Nuclear Information System (INIS)

    Moran, O.; Saldarriaga, W.; Baca, E.

    2007-01-01

    Epitaxial thin films of the conductive ferromagnetic oxide SrRuO 3 were grown on an (001) SrTiO 3 (STO) substrate by using DC sputtering technique. The magnetic and magnetoresistive properties of the films were measured by applying the magnetic field both perpendicular (out-of-plane) and parallel (in-plane) to the film plane and ever maintaining the direction of the applied field perpendicular to that of the transport current. The films grown on an (001) STO substrate showed identical magnetization properties in two orthogonal crystallographic directions of the substrate, [100] S and [001] S (in-plane and out-of-plane geometry), which suggests the presence of a multi domain structure within the plane of the film. For such samples, no anisotropic field (hard axis) along de [001]s direction, i.e., perpendicular to the film-plane could be detected. Nevertheless, a distinguishable temperature dependent out-of-plane anisotropic magnetoresistance (MR) along with strong temperature dependent low field hysteretic MR(H) behavior was detected for the studied films. A negative MR ratio MR(T)=[ρ(μ 0 H=9T; T)-ρ( μ 0 H=0T; T)]/ρ( μ 0 H=0T; T) on the order of a few percent, with maximums of ∼6% and ∼4% (right at the Curie temperature, T C ∼160K) was calculated for an in-plane and out-of plane measuring geometry, respectively. In addition there is an equally strong MR effect at low temperatures, which might be related to the temperature dependence of the magnetocrystalline anisotropy together with a magnetization rotation. Both the MR(T) behavior and the achieved values (except for T 3 films grown on 2 o miscut (001) STO substrates with the current parallel to the field and parallel to the [1-bar11] direction, which was identified as the easier axis for magnetization

  9. Ultra-smooth epitaxial Ge grown on Si(001) utilizing a thin C-doped Ge buffer layer

    KAUST Repository

    Mantey, J.

    2013-01-01

    Here, we present work on epitaxial Ge films grown on a thin buffer layer of C doped Ge (Ge:C). The growth rate of Ge:C is found to slow over time and is thus unsuitable for thick (>20 nm) layers. We demonstrate Ge films from 10 nm to >150 nm are possible by growing pure Ge on a thin Ge:C buffer. It is shown that this stack yields exceedingly low roughness levels (comparable to bulk Si wafers) and contains fewer defects and higher Hall mobility compared to traditional heteroepitaxial Ge. The addition of C at the interface helps reduce strain by its smaller atomic radius and its ability to pin defects within the thin buffer layer that do not thread to the top Ge layer. © 2013 AIP Publishing LLC.

  10. Epitaxial Oxide Thin Films Grown by Solid Source Metal-Organic Chemical Vapor Deposition.

    Science.gov (United States)

    Lu, Zihong

    1995-01-01

    The conventional liquid source metal-organic chemical vapor deposition (MOCVD) technique is capable of producing large area, high quality, single crystal semiconductor films. However, the growth of complex oxide films by this method has been hampered by a lack of suitable source materials. While chemists have been actively searching for new source materials, the research work reported here has demonstrated the successful application of solid metal-organic sources (based on tetramethylheptanedionate) to the growth of high quality thin films of binary compound cerium dioxide (CeO_2), and two more complex materials, the ternary compound lithium niobate (LiNbO_3), with two cations, and the quaternary compound strontium barium niobate (SBN), with three cations. The growth of CeO_2 thin films on (1012)Al_2O_3 substrates has been used as a model to study the general growth behavior of oxides. Factors affecting deposition rate, surface morphology, out-of-plane mosaic structure, and film orientation have been carefully investigated. A kinetic model based on gas phase prereaction is proposed to account for the substrate temperature dependence of film orientation found in this system. Atomically smooth, single crystal quality cerium dioxide thin films have been obtained. Superconducting YBCO films sputtered on top of solid source MOCVD grown thin cerium dioxide buffer layers on sapphire have been shown to have physical properties as good as those of YBCO films grown on single crystal MgO substrates. The thin film growth of LiNbO_3 and Sr_{1-x}Ba _{x}Nb_2 O_6 (SBN) was more complex and challenging. Phase purity, transparency, in-plane orientation, and the ferroelectric polarity of LiNbO _3 films grown on sapphire substrates was investigated. The first optical quality, MOCVD grown LiNbO _3 films, having waveguiding losses of less than 2 dB/cm, were prepared. An important aspect of the SBN film growth studies involved finding a suitable single crystal substrate material. Mg

  11. Preparation and utilization of metal oxide fine powder

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Joon Soo; Jang, Hee Dong; Lim, Young Woong; Kim, Sung Don; Lee, Hi Sun; Lee, Hoo In; Kim, Chul Joo; Shim, Gun Joo; Jang, Dae Kyu [Korea Inst. of Geology Mining and Materials, Taejon (Korea, Republic of)

    1995-12-01

    Metal oxide fine powders finds many applications in industry as new materials. It is very much necessary for the development of such powders to improve the domestic industry. The purpose of present research is to develop a process for the preparation and utilization of metal oxide fine powder. This project is consisted of two main subjects. (1) Production of ultrafine metal oxide powder: Ultrafine metal oxide powder is defined as a metal oxide powder of less than 100 nanometer in particle size. Experiments for the control of particle size and distributions in the various reaction system and compared with results of (2 nd year research). Various reaction systems were adopted for the development of feasible process. Ultrafine particles could be prepared even higher concentration of TiCl{sub 4} and lower gas flowrate compared to TiCl{sub 4}-O{sub 2} system in the TiCl{sub 4}-Air-H{sub 2}O system. Ultrafine Al{sub 2}O{sub 3} powders also prepared with the change of concentration and gas flowrate. Experiments on the treatment of surface characteristics of ultrafine TiO{sub 2} powders were investigated using esterification and surface treating agents. A mathematical model that can predict the particle size and distribution was also developed. (2) Preparation of cerium oxide for high-grade polishing powder: Used cerium polishing powder was recycled for preparation of high grade cerium oxide polishing powder. Also, cerium hydroxide which was generated as by-product in processing of monazite ore was used as another material. These two materials were leached respectively by using acid, and the precipitate was gained in each leached solution by adjusting pH of the solution, and by selective crystallization. These precipitates were calcined to make high grade cerium oxide polishing powder. The effect of several experimental variables were investigated, and the optimum conditions were obtained through the experiments. (author). 81 refs., 49 figs., 27 tabs.

  12. FY 1997 report on the study on lamination control technology for functional multi-element oxide thin films by complex beam epitaxy (CxBE) process; 1997 nendo chosa hokokusho (sakutaisen epitaxy (CxBE) ho ni yoru kinosei tagenso sankabutsu usumaku no sekiso seigyo gijutsu ni kansuru kenkyu)

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    1998-03-01

    Complex beam epitaxy (CxBE) process was proposed and demonstrated as new deposition process of multi-element oxide thin films. This process radiates excimer laser onto a metal complex target of ethylenediamine-tetraacetate complex under reduced pressure oxygen atmosphere condition in a reaction vessel to supply raw material onto a heated substrate. This process allowed deposition of YBCO123 phase hetero-epitaxial film onto a single-crystalline SrTiO3 substrate. This process was proved to be promising through study on crystal orientation, composition transcription and surface smoothness of the obtained oxide thin films. In addition, epitaxial ZnO film was also deposited onto a single crystalline Al2O3 substrate by this process. The relation between the obtained film and substrate epitaxy was examined, and photoluminescence of specimens was measured by triple wave of Nd:YAG laser. As a result, it was clarified that the epitaxial ZnO film prepared by this process is useful as laser material. 60 refs., 48 figs., 5 tabs.

  13. Epitaxial graphene

    Science.gov (United States)

    de Heer, Walt A.; Berger, Claire; Wu, Xiaosong; First, Phillip N.; Conrad, Edward H.; Li, Xuebin; Li, Tianbo; Sprinkle, Michael; Hass, Joanna; Sadowski, Marcin L.; Potemski, Marek; Martinez, Gérard

    2007-07-01

    Graphene multilayers are grown epitaxially on single crystal silicon carbide. This system is composed of several graphene layers of which the first layer is electron doped due to the built-in electric field and the other layers are essentially undoped. Unlike graphite the charge carriers show Dirac particle properties (i.e. an anomalous Berry's phase, weak anti-localization and square root field dependence of the Landau level energies). Epitaxial graphene shows quasi-ballistic transport and long coherence lengths; properties that may persist above cryogenic temperatures. Paradoxically, in contrast to exfoliated graphene, the quantum Hall effect is not observed in high-mobility epitaxial graphene. It appears that the effect is suppressed due to the absence of localized states in the bulk of the material. Epitaxial graphene can be patterned using standard lithography methods and characterized using a wide array of techniques. These favorable features indicate that interconnected room temperature ballistic devices may be feasible for low-dissipation high-speed nanoelectronics.

  14. The Utilization of Graphene Oxide in Traditional Construction Materials: Asphalt

    Directory of Open Access Journals (Sweden)

    Wenbo Zeng

    2017-01-01

    Full Text Available In the advanced research fields of solar cell and energy storing materials, graphene and graphene oxide (GO are two of the most promising materials due to their high specific surface area, and excellent electrical and physical properties. However, they was seldom studied in the traditional materials because of their high cost. Nowadays, graphene and GO are much cheaper than before with the development of production technologies, which provides the possibility of using these extraordinary materials in the traditional construction industry. In this paper, GO was selected as a nano-material to modify two different asphalts. Then a thin film oven test and a pressure aging vessel test were applied to simulate the aging of GO-modified asphalts. After thermal aging, basic physical properties (softening point and penetration were tested for the samples which were introduced at different mass ratios of GO (1% and 3% to asphalt. In addition, rheological properties were tested to investigate how GO could influence the asphalts by dynamic shearing rheometer tests. Finally, some interesting findings and potential utilization (warm mixing and flame retardants of GO in asphalt pavement construction were explained.

  15. The Utilization of Graphene Oxide in Traditional Construction Materials: Asphalt.

    Science.gov (United States)

    Zeng, Wenbo; Wu, Shaopeng; Pang, Ling; Sun, Yihan; Chen, Zongwu

    2017-01-07

    In the advanced research fields of solar cell and energy storing materials, graphene and graphene oxide (GO) are two of the most promising materials due to their high specific surface area, and excellent electrical and physical properties. However, they was seldom studied in the traditional materials because of their high cost. Nowadays, graphene and GO are much cheaper than before with the development of production technologies, which provides the possibility of using these extraordinary materials in the traditional construction industry. In this paper, GO was selected as a nano-material to modify two different asphalts. Then a thin film oven test and a pressure aging vessel test were applied to simulate the aging of GO-modified asphalts. After thermal aging, basic physical properties (softening point and penetration) were tested for the samples which were introduced at different mass ratios of GO (1% and 3%) to asphalt. In addition, rheological properties were tested to investigate how GO could influence the asphalts by dynamic shearing rheometer tests. Finally, some interesting findings and potential utilization (warm mixing and flame retardants) of GO in asphalt pavement construction were explained.

  16. Metal-oxide-semiconductor devices based on epitaxial germanium-carbon layers grown directly on silicon substrates by ultra-high-vacuum chemical vapor deposition

    Science.gov (United States)

    Kelly, David Quest

    After the integrated circuit was invented in 1959, complementary metal-oxide-semiconductor (CMOS) technology soon became the mainstay of the semiconductor industry. Silicon-based CMOS has dominated logic technologies for decades. During this time, chip performance has grown at an exponential rate at the cost of higher power consumption and increased process complexity. The performance gains have been made possible through scaling down circuit dimensions by improvements in lithography capabilities. Since scaling cannot continue forever, researchers have vigorously pursued new ways of improving the performance of metal-oxide-semiconductor field-effect transistors (MOSFETs) without having to shrink gate lengths and reduce the gate insulator thickness. Strained silicon, with its ability to boost transistor current by improving the channel mobility, is one of the methods that has already found its way into production. Although not yet in production, high-kappa dielectrics have also drawn wide interest in industry since they allow for the reduction of the electrical oxide thickness of the gate stack without having to reduce the physical thickness of the dielectric. Further out on the horizon is the incorporation of high-mobility materials such as germanium (Ge), silicon-germanium (Si1-xGe x), and the III-V semiconductors. Among the high-mobility materials, Ge has drawn the most attention because it has been shown to be compatible with high-kappa dielectrics and to produce high drive currents compared to Si. Among the most difficult challenges for integrating Ge on Si is finding a suitable method for reducing the number of crystal defects. The use of strain-relaxed Si1- xGex buffers has proven successful for reducing the threading dislocation density in Ge epitaxial layers, but questions remain as to the viability of this method in terms of cost and process complexity. This dissertation presents research on thin germanium-carbon (Ge 1-yCy layers on Si for the fabrication

  17. EDITORIAL: Epitaxial graphene Epitaxial graphene

    Science.gov (United States)

    de Heer, Walt A.; Berger, Claire

    2012-04-01

    Graphene is widely regarded as an important new electronic material with interesting two-dimensional electron gas properties. Not only that, but graphene is widely considered to be an important new material for large-scale integrated electronic devices that may eventually even succeed silicon. In fact, there are countless publications that demonstrate the amazing applications potential of graphene. In order to realize graphene electronics, a platform is required that is compatible with large-scale electronics processing methods. It was clear from the outset that graphene grown epitaxially on silicon carbide substrates was exceptionally well suited as a platform for graphene-based electronics, not only because the graphene sheets are grown directly on electronics-grade silicon carbide (an important semiconductor in its own right), but also because these sheets are oriented with respect to the semiconductor. Moreover, the extremely high temperatures involved in production assure essentially defect-free and contamination-free materials with well-defined interfaces. Epitaxial graphene on silicon carbide is not a unique material, but actually a class of materials. It is a complex structure consisting of a reconstructed silicon carbide surface, which, for planar hexagonal silicon carbide, is either the silicon- or the carbon-terminated face, an interfacial carbon rich layer, followed by one or more graphene layers. Consequently, the structure of graphene films on silicon carbide turns out to be a rich surface-science puzzle that has been intensively studied and systematically unravelled with a wide variety of surface science probes. Moreover, the graphene films produced on the carbon-terminated face turn out to be rotationally stacked, resulting in unique and important structural and electronic properties. Finally, in contrast to essentially all other graphene production methods, epitaxial graphene can be grown on structured silicon carbide surfaces to produce graphene

  18. Angle-resolved photoemission spectroscopy of strontium lanthanum copper oxide thin films grown by molecular-beam epitaxy

    Science.gov (United States)

    Harter, John Wallace

    Among the multitude of known cuprate material families and associated structures, the archetype is "infinite-layer" ACuO2, where perfectly square and flat CuO2 planes are separated by layers of alkaline earth atoms. The infinite-layer structure is free of magnetic rare earth ions, oxygen chains, orthorhombic distortions, incommensurate superstructures, ordered vacancies, and other complications that abound among the other material families. Furthermore, it is the only cuprate that can be made superconducting by both electron and hole doping, making it a potential platform for decoding the complex many-body interactions responsible for high-temperature superconductivity. Research on the infinite-layer compound has been severely hindered by the inability to synthesize bulk single crystals, but recent progress has led to high-quality superconducting thin film samples. Here we report in situ angle-resolved photoemission spectroscopy measurements of epitaxially-stabilized Sr1-chiLa chiCuO2 thin films grown by molecular-beam epitaxy. At low doping, the material exhibits a dispersive lower Hubbard band typical of other cuprate parent compounds. As carriers are added to the system, a continuous evolution from Mott insulator to superconducting metal is observed as a coherent low-energy band develops on top of a concomitant remnant lower Hubbard band, gradually filling in the Mott gap. For chi = 0.10, our results reveal a strong coupling between electrons and (pi,pi) anti-ferromagnetism, inducing a Fermi surface reconstruction that pushes the nodal states below the Fermi level and realizing nodeless superconductivity. Electron diffraction measurements indicate the presence of a surface reconstruction that is consistent with the polar nature of Sr1-chiLachiCuO2. Most knowledge about the electron-doped side of the cuprate phase diagram has been deduced by generalizing from a single material family, Re2-chi CechiCuO4, where robust antiferromagnetism has been observed past chi

  19. Molecular beam epitaxy of GaN(0001) utilizing NH3 and/or NH+x ions: Growth kinetics and defect structure

    International Nuclear Information System (INIS)

    Lee, N.; Powell, R.C.; Kim, Y.; Greene, J.E.

    1995-01-01

    Gas-source molecular beam epitaxy (GS-MBE), utilizing Ga and NH 3 , and reactive-ion MBE (RIMBE), incorporating both thermal NH 3 and low-energy NH + x ions, were used to grow single crystal GaN(0001) layers on Al 2 O 3 (0001) at temperatures T s between 700 and 850 degree C with deposition rates of 0.2--0.5 μm h -1 . The RIMBE experiments were carried out with incident NH + x /Ga flux ratios J NH + x /J Ga =1.9--3.2 and NH + x acceleration energies E NH + x =45--90 eV. Plan-view and cross-sectional transmission electron microscopy analyses showed that the primary defects in the GS-MBE films were threading dislocations having either pure edge or mixed edge/screw characteristics with Burgers vectors bar b=1/3 left-angle 2 bar 1 bar 10 right-angle, basal-plane stacking faults with displacement vectors bar R=1/6 left-angle 02 bar 23 right-angle, and prismatic stacking faults with bar R=1/2 left-angle bar 1101 right-angle. In the case of RIMBE films, no stacking faults or residual ion-induced defects were observed with E NH + x =45 eV and T s ≥800 degree C. However, increasing E NH + x to ≥60 eV at T s =800 degree C gave rise to the formation of residual ion-induced point-defect clusters observable by transmission electron microscopy (TEM). Increasing T s to 850 degree C with E NH + x ≥60 eV resulted in the ion-induced defects aggregating to form interstitial basal and prismatic dislocation loops, whose number densities depended upon the ion flux, with Burgers vectors 1/2 left-angle 0001 right-angle and 1/3 left-angle 2 bar 1 bar 10 right-angle, respectively. (Abstract Truncated)

  20. Multifunctional epitaxial systems on silicon substrates

    Energy Technology Data Exchange (ETDEWEB)

    Singamaneni, Srinivasa Rao, E-mail: ssingam@ncsu.edu [Department of Materials Science and Engineering, North Carolina State University, Raleigh, North Carolina 27695 (United States); Materials Science Division, Army Research Office, Research Triangle Park, North Carolina 27709 (United States); Department of Physics, The University of Texas at El Paso, El Paso, Texas 79968 (United States); Prater, John Thomas [Department of Materials Science and Engineering, North Carolina State University, Raleigh, North Carolina 27695 (United States); Materials Science Division, Army Research Office, Research Triangle Park, North Carolina 27709 (United States); Narayan, Jagdish [Department of Materials Science and Engineering, North Carolina State University, Raleigh, North Carolina 27695 (United States)

    2016-09-15

    Multifunctional heterostructures can exhibit a wide range of functional properties, including colossal magneto-resistance, magnetocaloric, and multiferroic behavior, and can display interesting physical phenomena including spin and charge ordering and strong spin-orbit coupling. However, putting this functionality to work remains a challenge. To date, most of the work reported in the literature has dealt with heterostructures deposited onto closely lattice matched insulating substrates such as DyScO{sub 3}, SrTiO{sub 3} (STO), or STO buffered Si(100) using concepts of lattice matching epitaxy (LME). However, strain in heterostructures grown by LME is typically not fully relaxed and the layers contain detrimental defects such as threading dislocations that can significantly degrade the physical properties of the films and adversely affect the device characteristics. In addition, most of the substrates are incompatible with existing CMOS-based technology, where Si (100) substrates dominate. This review discusses recent advances in the integration of multifunctional oxide and non-oxide materials onto silicon substrates. An alternative thin film growth approach, called “domain matching epitaxy,” is presented which identifies approaches for minimizing lattice strain and unwanted defects in large misfit systems (7%–25% and higher). This approach broadly allows for the integration of multifunctional materials onto silicon substrates, such that sensing, computation, and response functions can be combined to produce next generation “smart” devices. In general, pulsed laser deposition has been used to epitaxially grow these materials, although the concepts developed here can be extended to other deposition techniques, as well. It will be shown that TiN and yttria-stabilized zirconia template layers provide promising platforms for the integration of new functionality into silicon-based computer chips. This review paper reports on a number of thin

  1. Epitaxy-enabled vapor-liquid-solid growth of tin-doped indium oxide nanowires with controlled orientations

    KAUST Repository

    Shen, Youde; Turner, Stuart G.; Yang, Ping; Van Tendeloo, Gustaaf; Lebedev, Oleg I.; Wu, Tao

    2014-01-01

    challenges in reliably achieving these goals of orientation-controlled nanowire synthesis and assembly. Here we report that growth of planar, vertical and randomly oriented tin-doped indium oxide (ITO) nanowires can be realized on yttria-stabilized zirconia

  2. A study on the utilization of chromic oxide wastes

    Energy Technology Data Exchange (ETDEWEB)

    Hong, Seung Woong; Kim, Chi Kwon; Hwang, Seon Kook; Kim, Byung Gyu; Son, Jeong Soo; Nam, Chul Woo [Korea Inst. of Geology Mining and Materials, Taejon (Korea, Republic of)

    1995-12-01

    This study was carried out to develop the optimum process for recovering precious and valuable metals from chrome oxide wastes. The following subjects such as, (1) feasibility on the recovery of precious and valuable metals, (2) recovery rate of precious and valuable metals, (3) purification of extracted precious and valuable metals, and (4) environmental aspects of recovery process, were investigated and the main results are as follows. (1) With Sem analysis of chrome oxide wastes, it was found that combustion process for eliminating oil and water in wastes, was necessary. (2) After leaching chrome oxide wastes with nitric acid and aqua regia, silver and gold were effectively separated and recovered. But a lot of silver and gold were remaining in the leaching residue. It was considered that chrome oxide powder was coated with organic materials during polishing stage and their products were insoluble in acidic solution. (3) The optimum process for separation and recovery of precious metal and production of new chrome oxide is consist of several process such as perchloric acid leaching, recovery of silver chloride, cementation for gold, reduction of chrome ion, and production of pure chrome oxide. (4) For separating chrome compound from the chrome oxide waste occurred in stainless steel polishing process, alkali roasting process was suggested. (author). 18 refs., 29 figs., 11 tabs.

  3. Epitaxial growth of silicon for layer transfer

    Science.gov (United States)

    Teplin, Charles; Branz, Howard M

    2015-03-24

    Methods of preparing a thin crystalline silicon film for transfer and devices utilizing a transferred crystalline silicon film are disclosed. The methods include preparing a silicon growth substrate which has an interface defining substance associated with an exterior surface. The methods further include depositing an epitaxial layer of silicon on the silicon growth substrate at the surface and separating the epitaxial layer from the substrate substantially along the plane or other surface defined by the interface defining substance. The epitaxial layer may be utilized as a thin film of crystalline silicon in any type of semiconductor device which requires a crystalline silicon layer. In use, the epitaxial transfer layer may be associated with a secondary substrate.

  4. Epitaxial Sb-doped SnO{sub 2} and Sn-doped In{sub 2}O{sub 3} transparent conducting oxide contacts on GaN-based light emitting diodes

    Energy Technology Data Exchange (ETDEWEB)

    Tsai, Min-Ying [Department of Electrical and Computer Engineering, University of California, Santa Barbara, CA 93106 (United States); Bierwagen, Oliver, E-mail: bierwagen@pdi-berlin.de [Materials Department, University of California, Santa Barbara, CA 93106 (United States); Paul-Drude-Insitut für Festkörperelektronik, Hausvogteiplatz 5-7, 10117 Berlin (Germany); Speck, James S. [Materials Department, University of California, Santa Barbara, CA 93106 (United States)

    2016-04-30

    We demonstrate the growth of epitaxial (100)-oriented, rutile Sb-doped SnO{sub 2} (ATO) and (111)-oriented, cubic Sn-doped In{sub 2}O{sub 3} (ITO) transparent conducting oxide (TCO) contacts on top of an InGaN/GaN(0001) light emitting diode (LED) by plasma-assisted molecular beam epitaxy (PAMBE). Both oxides form rotational domains. The in-plane epitaxial alignment of the two ITO(111) rotational domains to the GaN(0001) was: GaN [21-10]|| ITO{sub Domain1}[‐ 211]|| ITO{sub Domain2}[‐ 1‐12]. A growth temperature as low as 600 °C was necessary to realize a low contact resistance between ATO and the top p-GaN layer of the LED but resulted in non-optimal resistivity (3.4 × 10{sup −} {sup 3} Ω cm) of the ATO. The current–voltage characteristics of a processed LED, however, were comparable to that of a reference LED with a standard electron-beam evaporated ITO top contact. At short wavelengths, the optical absorption of ATO was lower than that of ITO, which is beneficial even for blue LEDs. Higher PAMBE growth temperatures resulted in lower resistive ATO but higher contact resistance to the GaN, likely by the formation of an insulating Ga{sub 2}O{sub 3} interface layer. The ITO contact grown by PAMBE at 600 °C showed extremely low resistivity (10{sup −4} Ω cm) and high crystalline and morphological quality. These proof-of-principle results may lead to the development of epitaxial TCO contacts with low resistivity, well-defined interfaces to the p-GaN to help minimize contact losses, and enable further epitaxy on top of the TCO. - Highlights: • Plasma-assisted molecular beam epitaxy of SnO{sub 2}:Sb (ATO) and In{sub 2}O{sub 3}:Sn (ITO) contacts • Working light emitting diodes processed with the ATO contact on the top p-GaN layer • Low growth temperature ensures low contact resistance (limiting interface reaction). • ITO showed significantly better structural and transport properties than ATO. • ATO showed higher optical transmission at short

  5. Analysis of the methods utilized in OXIDE-3

    International Nuclear Information System (INIS)

    Skalyo, J. Jr.; Epel, L.G.; Sastre, C.

    1978-03-01

    OXIDE-3 is an evolving code developed to analyze the transient response of certain state variables of a High Temperature Gas Cooled Reactor (HTGR) during an accident involving the inleakage of steam and/or air into the helium primary coolant system. Primary tasks of the code are to calculate the primary coolant constituents as a function of time, their resultant chemical interaction with the graphite fuel elements, and their possible egress into the containment building. The report takes a critical look at certain aspects of the problem solving methods implemented in OXIDE-3 and gives estimates of the expected accuracy. Attendant to the latter finding, some of the calculated output may require careful interpretation since programmatical warnings are not given when an accuracy limitation is exceeded. The code has been used at BNL in an investigation to calculate the full power steady state impurity concentrations in the primary coolant system as a function of steam leak rate, steam graphite reaction rate, and the effective diffusion constant of steam in graphite. The results are in reasonable agreement with those obtained from the steady state oxidation code GOPTWO

  6. Monitoring non-pseudomorphic epitaxial growth of spinel/perovskite oxide heterostructures by reflection high-energy electron diffraction

    Energy Technology Data Exchange (ETDEWEB)

    Schütz, P.; Pfaff, F.; Scheiderer, P.; Sing, M.; Claessen, R. [Physikalisches Institut and Röntgen Center for Complex Material Systems (RCCM), Universität Würzburg, Am Hubland, D-97074 Würzburg (Germany)

    2015-02-09

    Pulsed laser deposition of spinel γ-Al{sub 2}O{sub 3} thin films on bulk perovskite SrTiO{sub 3} is monitored by high-pressure reflection high-energy electron diffraction (RHEED). The heteroepitaxial combination of two materials with different crystal structures is found to be inherently accompanied by a strong intensity modulation of bulk diffraction patterns from inelastically scattered electrons, which impedes the observation of RHEED intensity oscillations. Avoiding such electron surface-wave resonance enhancement by de-tuning the RHEED geometry allows for the separate observation of the surface-diffracted specular RHEED signal and thus the real-time monitoring of sub-unit cell two-dimensional layer-by-layer growth. Since these challenges are essentially rooted in the difference between film and substrate crystal structure, our findings are of relevance for the growth of any heterostructure combining oxides with different crystal symmetry and may thus facilitate the search for novel oxide heterointerfaces.

  7. Properties of epitaxial ferroelectric PbZr0.56Ti0.44O3 heterostructures with La0.5Sr0.5CoO3 metallic oxide electrodes

    International Nuclear Information System (INIS)

    Wang, F.; Leppaevuori, S.

    1997-01-01

    PbZr 0.56 Ti 0.44 O 3 (PZT) epitaxial ferroelectric thin films on a LaAlO 3 (100) substrate, covered by a metallic oxide electrode La 0.5 Sr 0.5 CoO 3 (LSCO) are demonstrated in this work. The films are fabricated by the sol endash gel method and effort was focused on thermal processing to obtain the desired epitaxial heterostructure. The dielectric and ferroelectric properties of PZT thin films were measured and it was found that they are as good as in the films deposited by other thin-film methods. The dielectric constant and the dissipation factor of the PZT films are, respectively, about 500 and 0.06 below 20 kHz. The remanent polarization P r is about 27 μC/cm 2 and the coercive field E c is about 50 kV/cm. It was found that the ferroelectric properties were significantly influenced by the microstructure of the PZT layers. The present study also showed that the fatigue characteristics of the epitaxial heterostructure with LSCO electrodes under a reversed electrical field are far superior to those obtained with a polycrystalline ferroelectric layer on Pt bottom electrodes. A low leakage current, about 3 μA/cm 2 at 0.5 MV/cm, was obtained for these epitaxial films. In addition, the optical transmittance spectrum of PZT thin films was also measured and the conduction mechanism is discussed.copyright 1997 American Institute of Physics

  8. Advanced Photon Source Activity Report 2002 at Argonne National Laboratory, Argonne, IL, December 2003 - contribution title:''Microdiffraction Study of Epitaxial Growth and Lattice Tilts in Oxide Films on Polycrystalline Metal Substrates''

    International Nuclear Information System (INIS)

    Budai, J.D.

    2004-01-01

    Texture, the preference for a particular crystallographic orientation in polycrystalline materials, plays an important role in controlling such diverse materials properties as corrosion resistance, recording density in magnetic media and electrical transport in superconductors [1]. Without texture, polycrystalline oxide superconductors contain many high-angle, weak-linked grain boundaries which reduce critical current densities by several orders of magnitude [2]. One approach for inducing texture in oxide superconductors has been the epitaxial growth of films on rolling-assisted biaxially-textured substrates (RABiTS) [3]. In this approach, rolled Ni foils are recrystallized under conditions that lead to a high degree of biaxial {001} cube texture. Subsequent deposition of epitaxial oxide buffer layers (typically CeO 2 and YSZ as chemical barriers) and superconducting YBCO preserves the lattice alignment, eliminating high-angle boundaries and enabling high critical current densities, J c > 10 6 /cm 2 . Conventional x-ray diffraction using ω- and φ-scans typically shows macroscopic biaxial texture to within ∼5 o -10 o FWHM for all layers, but does not describe the local microstructural features that control the materials properties. Understanding and controlling the local texture and microstructural evolution of processes associated with heteroepitaxial growth, differential thermal contraction and cracking remain significant challenges in this complex system [4], as well as in many other technologically important thin-film applications

  9. High current density GaAs/Si rectifying heterojunction by defect free Epitaxial Lateral overgrowth on Tunnel Oxide from nano-seed.

    Science.gov (United States)

    Renard, Charles; Molière, Timothée; Cherkashin, Nikolay; Alvarez, José; Vincent, Laetitia; Jaffré, Alexandre; Hallais, Géraldine; Connolly, James Patrick; Mencaraglia, Denis; Bouchier, Daniel

    2016-05-04

    Interest in the heteroepitaxy of GaAs on Si has never failed in the last years due to the potential for monolithic integration of GaAs-based devices with Si integrated circuits. But in spite of this effort, devices fabricated from them still use homo-epitaxy only. Here we present an epitaxial technique based on the epitaxial lateral overgrowth of micrometer scale GaAs crystals on a thin SiO2 layer from nanoscale Si seeds. This method permits the integration of high quality and defect-free crystalline GaAs on Si substrate and provides active GaAs/Si heterojunctions with efficient carrier transport through the thin SiO2 layer. The nucleation from small width openings avoids the emission of misfit dislocations and the formation of antiphase domains. With this method, we have experimentally demonstrated for the first time a monolithically integrated GaAs/Si diode with high current densities of 10 kA.cm(-2) for a forward bias of 3.7 V. This epitaxial technique paves the way to hybrid III-V/Si devices that are free from lattice-matching restrictions, and where silicon not only behaves as a substrate but also as an active medium.

  10. Asymmetric, compressive, SiGe epilayers on Si grown by lateral liquid-phase epitaxy utilizing a distinction between dislocation nucleation and glide critical thicknesses

    Science.gov (United States)

    O'Reilly, Andrew J.; Quitoriano, Nathaniel

    2018-01-01

    Uniaxially strained Si1-xGex channels have been proposed as a solution for high mobility channels in next-generation MOSFETS to ensure continued device improvement as the benefits from further miniaturisation are diminishing. Previously proposed techniques to deposit uniaxially strained Si1-xGex epilayers on Si (0 0 1) substrates require multiple deposition steps and only yielded thin strips of uniaxially strained films. A lateral liquid-phase epitaxy (LLPE) technique was developed to deposit a blanket epilayer of asymmetrically strained Si97.4Ge2.6 on Si in a single step, where the epilayer was fully strained in the growth direction and 31% strain-relaxed in the orthogonal direction. The LLPE technique promoted the glide of misfit dislocations, which nucleated in a region with an orthogonal misfit dislocation network, into a region where the dislocation nucleation was inhibited. This created an array of parallel misfit dislocations which were the source of the asymmetric strain. By observing the thicknesses at which the dislocation network transitions from orthogonal to parallel and at which point dislocation glide is exhausted, the separate critical thicknesses for dislocation nucleation and dislocation glide can be determined.

  11. Epitaxial Gd2O3 on GaN and AlGaN: a potential candidate for metal oxide semiconductor based transistors on Si for high power application

    Science.gov (United States)

    Ghosh, Kankat; Das, S.; Khiangte, K. R.; Choudhury, N.; Laha, Apurba

    2017-11-01

    We report structural and electrical properties of hexagonal Gd2O3 grown epitaxially on GaN/Si (1 1 1) and AlGaN/GaN/Si(1 1 1) virtual substrates. GaN and AlGaN/GaN heterostructures were grown on Si(1 1 1) substrates by plasma assisted molecular beam epitaxy (PA-MBE), whereas the Gd2O3 layer was grown by the pulsed laser ablation (PLA) technique. Initial structural characterizations show that Gd2O3 grown on III-nitride layers by PLA, exhibit a hexagonal structure with an epitaxial relationship as {{≤ft[ 0 0 0 1 \\right]}G{{d2}{{O}3}}}||{{≤ft[ 0 0 0 1 \\right]}GaN} and {{≤ft[ 1 \\bar{1} 0 0 \\right]}G{{d2}{{O}3}}}||{{≤ft[ 1 \\bar{1} 0 0 \\right]}GaN} . X-ray photoelectron measurements of the valence bands revealed that Gd2O3 exhibits band offsets of 0.97 eV and 0.4 eV, for GaN and Al0.3Ga0.7N, respectively. Electrical measurements such as capacitance-voltage and leakage current characteristics further confirm that epi-Gd2O3 on III-nitrides could be a potential candidate for future metal-oxide-semiconductor (MOS)-based transistors also for high power applications in radio frequency range.

  12. Thin epitaxial silicon detectors

    International Nuclear Information System (INIS)

    Stab, L.

    1989-01-01

    Manufacturing procedures of thin epitaxial surface barriers will be given. Some improvements have been obtained: larger areas, lower leakage currents and better resolutions. New planar epitaxial dE/dX detectors, made in a collaboration work with ENERTEC-INTERTECHNIQUE, and a new application of these thin planar diodes to EXAFS measurements, made in a collaboration work with LURE (CNRS,CEA,MEN) will also be reported

  13. Nitric oxide nanoparticles: Pre-clinical utility as a therapeutic for intramuscular abscesses

    OpenAIRE

    Schairer, David O.; Martinez, Luis R.; Blecher, Karin; Chouake, Jason S.; Nacharaju, Parimala; Gialanella, Philip; Friedman, Joel M.; Nosanchuk, Joshua D.; Friedman, Adam J.

    2012-01-01

    Nitric oxide (NO) is a critical component of host defense against invading pathogens; however, its therapeutic utility is limited due to a lack of practical delivery systems. Recently, a NO-releasing nanoparticulate platform (NO-np) was shown to have in vitro broad-spectrum antimicrobial activity and in vivo pre-clinical efficacy in a dermal abscess model. To extend these findings, both topical (TP) and intralesional (IL) NO-np administration was evaluated in a MRSA intramuscular murine absce...

  14. Ferroelectric and piezoelectric responses of (110) and (001)-oriented epitaxial Pb(Zr{sub 0.52}Ti{sub 0.48})O{sub 3} thin films on all-oxide layers buffered silicon

    Energy Technology Data Exchange (ETDEWEB)

    Vu, Hien Thu [International Training Institute for Materials Science (ITIMS), Hanoi University of Science and Technology, No.1 Dai Co Viet Road, Hanoi 10000 (Viet Nam); Nguyen, Minh Duc, E-mail: minh.nguyen@itims.edu.vn [International Training Institute for Materials Science (ITIMS), Hanoi University of Science and Technology, No.1 Dai Co Viet Road, Hanoi 10000 (Viet Nam); Inorganic Materials Science (IMS), MESA + Institute for Nanotechnology, University of Twente, P.O. Box 217, 7500 AE Enschede (Netherlands); SolMateS B.V., Drienerlolaan 5, Building 6, 7522 NB Enschede (Netherlands); Houwman, Evert; Boota, Muhammad [Inorganic Materials Science (IMS), MESA + Institute for Nanotechnology, University of Twente, P.O. Box 217, 7500 AE Enschede (Netherlands); Dekkers, Matthijn [SolMateS B.V., Drienerlolaan 5, Building 6, 7522 NB Enschede (Netherlands); Vu, Hung Ngoc [International Training Institute for Materials Science (ITIMS), Hanoi University of Science and Technology, No.1 Dai Co Viet Road, Hanoi 10000 (Viet Nam); Rijnders, Guus [Inorganic Materials Science (IMS), MESA + Institute for Nanotechnology, University of Twente, P.O. Box 217, 7500 AE Enschede (Netherlands)

    2015-12-15

    Graphical abstract: The cross sections show a very dense structure in the (001)-oriented films (c,d), while an open columnar growth structure is observed in the case of the (110)-oriented films (a,b). The (110)-oriented PZT films show a significantly larger longitudinal piezoelectric coefficient (d33{sub ,f}), but smaller transverse piezoelectric coefficient (d31{sub ,f}) than the (001) oriented films. - Highlights: • We fabricate all-oxide, epitaxial piezoelectric PZT thin films on Si. • The orientation of the films can be controlled by changing the buffer layer stack. • The coherence of the in-plane orientation of the grains and grain boundaries affects the ferroelectric properties. • Good cycling stability of the ferroelectric properties of (001)-oriented PZT thin films. The (110)-oriented PZT thin films show a larger d33{sub ,f} but smaller d31{sub ,f} than the (001)-oriented films. - Abstract: Epitaxial ferroelectric Pb(Zr{sub 0.52}Ti{sub 0.48})O{sub 3} (PZT) thin films were fabricated on silicon substrates using pulsed laser deposition. Depending on the buffer layers and perovskite oxide electrodes, epitaxial films with different orientations were grown. (110)-oriented PZT/SrRuO{sub 3} (and PZT/LaNiO{sub 3}) films were obtained on YSZ-buffered Si substrates, while (001)-oriented PZT/SrRuO{sub 3} (and PZT/LaNiO{sub 3}) were fabricated with an extra CeO{sub 2} buffer layer (CeO{sub 2}/YSZ/Si). There is no effect of the electrode material on the properties of the films. The initial remnant polarizations in the (001)-oriented films are higher than those of (110)-oriented films, but it increases to the value of the (001) films upon cycling. The longitudinal piezoelectric d33{sub ,f} coefficients of the (110) films are larger than those of the (001) films, whereas the transverse piezoelectric d31{sub ,f} coefficients in the (110)-films are less than those in the (001)-oriented films. The difference is ascribed to the lower density (connectivity between

  15. Roles of free radicals in NO oxidation by Fenton system and the enhancement on NO oxidation and H2O2 utilization efficiency.

    Science.gov (United States)

    Zhao, Haiqian; Dong, Ming; Wang, Zhonghua; Wang, Huaiyuan; Qi, Hanbing

    2018-06-20

    Low H 2 O 2 utilization efficiency is the main problem when Fenton system was used to oxidize NO in flue gas. To understand the behavior of the free radicals during NO oxidation process in Fenton system is crucial to solving this problem. The oxidation capacity of ·OH and HO 2 · on NO in Fenton system was compared and the useless consumption path of ·OH and HO 2 · that caused the low utilization efficiency of H 2 O 2 were studied. A method to enhance the oxidation ability and H 2 O 2 utilization efficiency by adding reducing additives in Fenton system was proposed. The results showed that both of ·OH and HO 2 · were active substances that oxidize NO. However, the oxidation ability of ·OH radicals was stronger. The vast majority of ·OH and HO 2 · was consumed by rapid reaction ·OH+HO 2 ·→H 2 O+O 2 , which was the primary reason for the low utilization efficiency of H 2 O 2 in Fenton system. Hydroxylamine hydrochloride and ascorbic acid could accelerate the conversion of Fe 3+ to Fe 2+ , thereby increase the generation rate of ·OH and decrease the generation rate of HO 2 ·. As a result, the oxidation ability and H 2 O 2 utilization efficiency were enhanced.

  16. Characterization of Niobium Oxide Films Deposited by High Target Utilization Sputter Sources

    International Nuclear Information System (INIS)

    Chow, R; Ellis, A D; Loomis, G E; Rana, S I

    2007-01-01

    High quality, refractory metal, oxide coatings are required in a variety of applications such as laser optics, micro-electronic insulating layers, nano-device structures, electro-optic multilayers, sensors and corrosion barriers. A common oxide deposition technique is reactive sputtering because the kinetic mechanism vaporizes almost any solid material in vacuum. Also, the sputtered molecules have higher energies than those generated from thermal evaporation, and so the condensates are smoother and denser than those from thermally-evaporated films. In the typical sputtering system, target erosion is a factor that drives machine availability. In some situations such as nano-layered capacitors, where the device's performance characteristics depends on thick layers, target life becomes a limiting factor on the maximizing device functionality. The keen interest to increase target utilization in sputtering has been addressed in a variety of ways such as target geometry, rotating magnets, and/or shaped magnet arrays. Also, a recent sputtering system has been developed that generates a high density plasma, directs the plasma beam towards the target in a uniform fashion, and erodes the target in a uniform fashion. The purpose of this paper is to characterize and compare niobia films deposited by two types of high target utilization sputtering sources, a rotating magnetron and a high density plasma source. The oxide of interest in this study is niobia because of its high refractive index. The quality of the niobia films were characterized spectroscopically in optical transmission, ellipsometrically, and chemical stoichiometry with X-ray photo-electron spectroscopy. The refractive index, extinction coefficients, Cauchy constants were derived from the ellipsometric modeling. The mechanical properties of coating density and stress are also determined

  17. Structural evolution of epitaxial SrCoOx films near topotactic phase transition

    Science.gov (United States)

    Jeen, Hyoungjeen; Lee, Ho Nyung

    2015-12-01

    Control of oxygen stoichiometry in complex oxides via topotactic phase transition is an interesting avenue to not only modifying the physical properties, but utilizing in many energy technologies, such as energy storage and catalysts. However, detailed structural evolution in the close proximity of the topotactic phase transition in multivalent oxides has not been much studied. In this work, we used strontium cobaltites (SrCoOx) epitaxially grown by pulsed laser epitaxy (PLE) as a model system to study the oxidation-driven evolution of the structure, electronic, and magnetic properties. We grew coherently strained SrCoO2.5 thin films and performed post-annealing at various temperatures for topotactic conversion into the perovskite phase (SrCoO3-δ). We clearly observed significant changes in electronic transport, magnetism, and microstructure near the critical temperature for the topotactic transformation from the brownmillerite to the perovskite phase. Nevertheless, the overall crystallinity was well maintained without much structural degradation, indicating that topotactic phase control can be a useful tool to control the physical properties repeatedly via redox reactions.

  18. Structural evolution of epitaxial SrCoOx films near topotactic phase transition

    Directory of Open Access Journals (Sweden)

    Hyoungjeen Jeen

    2015-12-01

    Full Text Available Control of oxygen stoichiometry in complex oxides via topotactic phase transition is an interesting avenue to not only modifying the physical properties, but utilizing in many energy technologies, such as energy storage and catalysts. However, detailed structural evolution in the close proximity of the topotactic phase transition in multivalent oxides has not been much studied. In this work, we used strontium cobaltites (SrCoOx epitaxially grown by pulsed laser epitaxy (PLE as a model system to study the oxidation-driven evolution of the structure, electronic, and magnetic properties. We grew coherently strained SrCoO2.5 thin films and performed post-annealing at various temperatures for topotactic conversion into the perovskite phase (SrCoO3-δ. We clearly observed significant changes in electronic transport, magnetism, and microstructure near the critical temperature for the topotactic transformation from the brownmillerite to the perovskite phase. Nevertheless, the overall crystallinity was well maintained without much structural degradation, indicating that topotactic phase control can be a useful tool to control the physical properties repeatedly via redox reactions.

  19. Structural evolution of epitaxial SrCoO{sub x} films near topotactic phase transition

    Energy Technology Data Exchange (ETDEWEB)

    Jeen, Hyoungjeen [Materials Science and Technology Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831 (United States); Department of Physics, Pusan National University, Busan, 609735 (Korea, Republic of); Lee, Ho Nyung, E-mail: hnlee@ornl.gov [Materials Science and Technology Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831 (United States)

    2015-12-15

    Control of oxygen stoichiometry in complex oxides via topotactic phase transition is an interesting avenue to not only modifying the physical properties, but utilizing in many energy technologies, such as energy storage and catalysts. However, detailed structural evolution in the close proximity of the topotactic phase transition in multivalent oxides has not been much studied. In this work, we used strontium cobaltites (SrCoO{sub x}) epitaxially grown by pulsed laser epitaxy (PLE) as a model system to study the oxidation-driven evolution of the structure, electronic, and magnetic properties. We grew coherently strained SrCoO{sub 2.5} thin films and performed post-annealing at various temperatures for topotactic conversion into the perovskite phase (SrCoO{sub 3-δ}). We clearly observed significant changes in electronic transport, magnetism, and microstructure near the critical temperature for the topotactic transformation from the brownmillerite to the perovskite phase. Nevertheless, the overall crystallinity was well maintained without much structural degradation, indicating that topotactic phase control can be a useful tool to control the physical properties repeatedly via redox reactions.

  20. Microbial utilization of low molecular weight organic substrates in soil depends on their carbon oxidation state

    Science.gov (United States)

    Gunina, Anna; Smith, Andrew; Jones, Davey; Kuzyakov, Yakov

    2017-04-01

    Removal of low molecular weight organic substances (LMWOS), originating from plants and microorganisms, from soil solution is regulated by microbial uptake. In addition to the concentration of LMWOS in soil solution, the chemical properties of each substance (e.g. C oxidation state, number of C atoms, number of -COOH groups) can affect their uptake and subsequent partitioning of C within the soil microbial community. The aim of this study was to trace the initial fate of three dominant classes of LMWOS in soil (sugars, carboxylic and amino acids), including their removal from solution and utilization by microorganisms, and to reveal the effect of substance chemical properties on these processes. Soil solution, spiked at natural abundance levels with 14C-labelled glucose, fructose, malate, succinate, formate, alanine or glycine, was added to the soil and 14C was traced in the dissolved organic carbon (DOC), CO2, cytosol and soil organic carbon (SOC) over 24 hours. The half-life time of all LMWOS in the DOC (T1 /2-solution) varied between 0.6-5.0 min showing extremely fast initial uptake of LMWOS. The T1 /2-solution of substances was dependent on C oxidation state, indicating that less oxidized organic substances (with C oxidation state "0") were retained longer in soil solution than oxidized substances. The LMWOS-C T1 /2-fast, characterizing the half-life time of 14C in the fast mineralization pool, ranged between 30 and 80 min, with the T1 /2-fast of carboxylic acids (malic acid) being the fastest and the T1 /2-fast of amino acids (glycine) being the slowest. An absence of correlation between T1 /2-fast and either C oxidation state, number of C atoms, or number of -COOH groups suggests that intercellular metabolic pathways are more important for LMWOS transformation in soil than their basic chemical properties. The CO2 release during LMWOS mineralization accounted for 20-90% of 14C applied. Mineralization of LMWOS was the least for sugars and the greatest for

  1. Epitaxial growth of hybrid nanostructures

    Science.gov (United States)

    Tan, Chaoliang; Chen, Junze; Wu, Xue-Jun; Zhang, Hua

    2018-02-01

    Hybrid nanostructures are a class of materials that are typically composed of two or more different components, in which each component has at least one dimension on the nanoscale. The rational design and controlled synthesis of hybrid nanostructures are of great importance in enabling the fine tuning of their properties and functions. Epitaxial growth is a promising approach to the controlled synthesis of hybrid nanostructures with desired structures, crystal phases, exposed facets and/or interfaces. This Review provides a critical summary of the state of the art in the field of epitaxial growth of hybrid nanostructures. We discuss the historical development, architectures and compositions, epitaxy methods, characterization techniques and advantages of epitaxial hybrid nanostructures. Finally, we provide insight into future research directions in this area, which include the epitaxial growth of hybrid nanostructures from a wider range of materials, the study of the underlying mechanism and determining the role of epitaxial growth in influencing the properties and application performance of hybrid nanostructures.

  2. Selfsupported epitaxial silicon films

    International Nuclear Information System (INIS)

    Lazarovici, D.; Popescu, A.

    1975-01-01

    The methods of removing the p or p + support of an n-type epitaxial silicon layer using electrochemical etching are described. So far, only n + -n junctions have been processed. The condition of anodic dissolution for some values of the support and layer resistivity are given. By this method very thin single crystal selfsupported targets of convenient areas can be obtained for channeling - blocking experiments

  3. Epitaxial patterning of thin-films: conventional lithographies and beyond

    International Nuclear Information System (INIS)

    Zhang, Wei; Krishnan, Kannan M

    2014-01-01

    Thin-film based novel magnetic and electronic devices have entered a new era in which the film crystallography, structural coherence, and epitaxy play important roles in determining their functional properties. The capabilities of controlling such structural and functional properties are being continuously developed by various physical deposition technologies. Epitaxial patterning strategies further allow the miniaturization of such novel devices, which incorporates thin-film components into nanoscale architectures while keeping their functional properties unmodified from their ideal single-crystal values. In the past decade, epitaxial patterning methods on the laboratory scale have been reported to meet distinct scientific inquires, in which the techniques and processes used differ from one to the other. In this review we summarize many of these pioneering endeavors in epitaxial patterning of thin-film devices that use both conventional and novel lithography techniques. These methods demonstrate epitaxial patterning for a broad range of materials (metals, oxides, and semiconductors) and cover common device length scales from micrometer to sub-hundred nanometer. Whilst we have been motivated by magnetic materials and devices, we present our outlook on developing systematic-strategies for epitaxial patterning of functional materials which will pave the road for the design, discovery and industrialization of next-generation advanced magnetic and electronic nano-devices. (topical review)

  4. Ge-on-Si : Single-Crystal Selective Epitaxial Growth in a CVD Reactor

    NARCIS (Netherlands)

    Sammak, A.; De Boer, W.B.; Nanver, L.K.

    2012-01-01

    A standard Si/SiGe ASM CVD reactor that was recently modified for merging GaAs and Si epitaxial growth in one system is utilized to achieve intrinsic and doped epitaxial Ge-on-Si with low threading dislocation and defect densities. For this purpose, the system is equipped with 2% diluted GeH4 as the

  5. Influences of residual oxygen impurities, cubic indium oxide grains and indium oxy-nitride alloy grains in hexagonal InN crystalline films grown on Si(111) substrates by electron cyclotron resonance plasma-assisted molecular beam epitaxy

    International Nuclear Information System (INIS)

    Yodo, T.; Nakamura, T.; Kouyama, T.; Harada, Y.

    2005-01-01

    We investigated the influences of residual oxygen (O) impurities, cubic indium oxide (β-In 2 O 3 ) grains and indium oxy-nitride (InON) alloy grains in 200 nm-thick hexagonal (α)-InN crystalline films grown on Si(111) substrates by electron cyclotron resonance plasma-assisted molecular beam epitaxy. Although β-In 2 O 3 grains with wide band-gap energy were formed in In film by N 2 annealing, they were not easily formed in N 2 -annealed InN films. Even if they were not detected in N 2 -annealed InN films, the as-grown films still contained residual O impurities with concentrations of less than 0.5% ([O]≤0.5%). Although [O]∝1% could be estimated by investigating In 2 O 3 grains formed in N 2 -annealed InN films, [O]≤0.5% could not be measured by it. However, we found that they can be qualitatively measured by investigating In 2 O 3 grains formed by H 2 annealing with higher reactivity with InN and O 2 , using X-ray diffraction and PL spectroscopy. In this paper, we discuss the formation mechanism of InON alloy grains in InN films. (copyright 2005 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  6. The silicon-silicon oxide multilayers utilization as intrinsic layer on pin solar cells

    International Nuclear Information System (INIS)

    Colder, H.; Marie, P.; Gourbilleau, F.

    2008-01-01

    Silicon nanostructures are promising candidate for the intrinsic layer on pin solar cells. In this work we report on new material: silicon-rich silicon oxide (SRSO) deposited by reactive magnetron sputtering of a pure silica target and an interesting structure: multilayers consisting of a stack of SRSO and pure silicon oxide layers. Two thicknesses of the SRSO sublayer, t SRSO , are studied 3 nm and 5 nm whereas the thickness of silica sublayer is maintaining at 3 nm. The presence of nanocrystallites of silicon, evidenced by X-Ray diffraction (XRD), leads to photoluminescence (PL) emission at room temperature due to the quantum confinement of the carriers. The PL peak shifts from 1.3 eV to 1.5 eV is correlated to the decreasing of t SRSO from 5 nm down to 3 nm. In the purpose of their potential utilization for i-layer, the optical properties are studied by absorption spectroscopy. The achievement a such structures at promising absorption properties. Moreover by favouring the carriers injection by the tunnel effect between silicon nanograins and silica sublayers, the multilayers seem to be interesting for solar cells

  7. Surface plasmon resonance based fiber optic detection of chlorine utilizing polyvinylpyrolidone supported zinc oxide thin films.

    Science.gov (United States)

    Tabassum, Rana; Gupta, Banshi D

    2015-03-21

    A highly sensitive chlorine sensor for an aqueous medium is fabricated using an optical fiber surface plasmon resonance (OFSPR) system. An OFSPR-based chlorine sensor is designed with a multilayer-type platform by zinc oxide (ZnO) and polyvinylpyrollidone (PVP) film morphology manipulations. Among all the methodologies of transduction reported in the field of solid state chemical and biochemical sensing, our attention is focused on the Kretschmann configuration optical fiber sensing technique using the mechanism of surface plasmon resonance. The optical fiber surface plasmon resonance (SPR) chlorine sensor is developed using a multimode optical fiber with the PVP-supported ZnO film deposited over a silver-coated unclad core of the fiber. A spectral interrogation mode of operation is used to characterize the sensor. In an Ag/ZnO/PVP multilayer system, the absorption of chlorine in the vicinity of the sensing region is performed by the PVP layer and the zinc oxide layer enhances the shift in resonance wavelength. It is, experimentally, demonstrated that the SPR wavelength shifts nonlinearly towards the red side of the visible region with an increase in the chlorine concentration in an aqueous medium while the sensitivity of the sensor decreases linearly with an increase in the chlorine concentration. As the proposed sensor utilizes an optical fiber, it possesses the additional advantages of fiber such as less signal degradation, less susceptibility to electromagnetic interference, possibility of remote sensing, probe miniaturization, probe re-usability, online monitoring, small size, light weight and low cost.

  8. Impact of dynamic specimen shape evolution on the atom probe tomography results of doped epitaxial oxide multilayers: Comparison of experiment and simulation

    Energy Technology Data Exchange (ETDEWEB)

    Madaan, Nitesh; Nandasiri, Manjula; Devaraj, Arun, E-mail: arun.devaraj@pnnl.gov [Environmental Molecular Sciences Laboratory, Pacific Northwest National Laboratory, 3335 Innovation Boulevard, Richland, Washington 99354 (United States); Bao, Jie [Energy and Environment Directorate, Pacific Northwest National Laboratory, 902 Battelle Boulevard, Richland, Washington 99354 (United States); Xu, Zhijie [Fundamental and Computational Sciences Directorate, Pacific Northwest National Laboratory, 902 Battelle Boulevard, Richland, Washington 99354 (United States); Thevuthasan, Suntharampillai [Environmental Molecular Sciences Laboratory, Pacific Northwest National Laboratory, 3335 Innovation Boulevard, Richland, Washington 99354 (United States); Qatar Environment and Energy Research Institute, Qatar Foundation, PO Box 5825, Doha (Qatar)

    2015-08-31

    The experimental atom probe tomography (APT) results from two different specimen orientations (top-down and sideways) of a high oxygen ion conducting Samaria-doped-ceria/Scandia-stabilized-zirconia multilayer thin film solid oxide fuel cell electrolyte was compared with level-set method based field evaporation simulations for the same specimen orientations. This experiment-simulation comparison explains the dynamic specimen shape evolution and ion trajectory aberrations that can induce density artifacts in final reconstruction, leading to inaccurate estimation of interfacial intermixing. This study highlights the importance of comparing experimental results with field evaporation simulations when using APT to study oxide heterostructure interfaces.

  9. The role of Energy Deposition in the Epitaxial Layer in Triggering SEGR in Power MOSFETs

    Science.gov (United States)

    Selva, L.; Swift, G.; Taylor, W.; Edmonds, L.

    1999-01-01

    In these SEGR experiments, three identical-oxide MOSFET types were irradiated with six ions of significantly different ranges. Results show the prime importance of the total energy deposited in the epitaxial layer.

  10. Probing the bulk ionic conductivity by thin film hetero-epitaxial engineering

    KAUST Repository

    Pergolesi, Daniele; Roddatis, Vladimir; Fabbri, Emiliana; Schneider, Christof W; Lippert, Thomas; Traversa, Enrico; Kilner, John A

    2015-01-01

    Highly textured thin films with small grain boundary regions can be used as model systems to directly measure the bulk conductivity of oxygen ion conducting oxides. Ionic conducting thin films and epitaxial heterostructures are also widely used

  11. From Oxygen Generation to Metals Production: In Situ Resource Utilization by Molten Oxide Electrolysis

    Science.gov (United States)

    Khetpal, Deepak; Ducret, Andrew C.; Sadoway, Donald R.

    2003-01-01

    For the exploration of other bodies in the solar system, electrochemical processing is arguably the most versatile technology for conversion of local resources into usable commodities: by electrolysis one can, in principle, produce (1) breathable oxygen, (2) silicon for the fabrication of solar cells, (3) various reactive metals for use as electrodes in advanced storage batteries, and (4) structural metals such as steel and aluminum. Even so, to date there has been no sustained effort to develop such processes, in part due to the inadequacy of the database. The objective here is to identify chemistries capable of sustaining molten oxide electrolysis in the cited applications and to examine the behavior of laboratory-scale cells designed to generate oxygen and to produce metal. The basic research includes the study of the underlying high-temperature physical chemistry of oxide melts representative of lunar regolith and of Martian soil. To move beyond empirical approaches to process development, the thermodynamic and transport properties of oxide melts are being studied to help set the limits of composition and temperature for the processing trials conducted in laboratory-scale electrolysis cells. The goal of this investigation is to deliver a working prototype cell that can use lunar regolith and Martian soil to produce breathable oxygen along with metal by-product. Additionally, the process can be generalized to permit adaptation to accommodate different feedstock chemistries, such as those that will be encountered on other bodies in the solar system. The expected results of this research include: (1) the identification of appropriate electrolyte chemistries; (2) the selection of candidate anode and cathode materials compatible with electrolytes named above; and (3) performance data from a laboratory-scale cell producing oxygen and metal. On the strength of these results it should be possible to assess the technical viability of molten oxide electrolysis for in

  12. Spin transport in epitaxial graphene

    Science.gov (United States)

    Tbd, -

    2014-03-01

    Spintronics is a paradigm focusing on spin as the information vector in fast and ultra-low-power non volatile devices such as the new STT-MRAM. Beyond its widely distributed application in data storage it aims at providing more complex architectures and a powerful beyond CMOS solution for information processing. The recent discovery of graphene has opened novel exciting opportunities in terms of functionalities and performances for spintronics devices. We will present experimental results allowing us to assess the potential of graphene for spintronics. We will show that unprecedented highly efficient spin information transport can occur in epitaxial graphene leading to large spin signals and macroscopic spin diffusion lengths (~ 100 microns), a key enabler for the advent of envisioned beyond-CMOS spin-based logic architectures. We will also show that how the device behavior is well explained within the framework of the Valet-Fert drift-diffusion equations. Furthermore, we will show that a thin graphene passivation layer can prevent the oxidation of a ferromagnet, enabling its use in novel humide/ambient low-cost processes for spintronics devices, while keeping its highly surface sensitive spin current polarizer/analyzer behavior and adding new enhanced spin filtering property. These different experiments unveil promising uses of graphene for spintronics.

  13. Carbon deposition thresholds on nickel-based solid oxide fuel cell anodes I. Fuel utilization

    Science.gov (United States)

    Kuhn, J.; Kesler, O.

    2015-03-01

    In the first of a two part publication, the effect of fuel utilization (Uf) on carbon deposition rates in solid oxide fuel cell nickel-based anodes was studied. Representative 5-component CH4 reformate compositions (CH4, H2, CO, H2O, & CO2) were selected graphically by plotting the solutions to a system of mass-balance constraint equations. The centroid of the solution space was chosen to represent a typical anode gas mixture for each nominal Uf value. Selected 5-component and 3-component gas mixtures were then delivered to anode-supported cells for 10 h, followed by determination of the resulting deposited carbon mass. The empirical carbon deposition thresholds were affected by atomic carbon (C), hydrogen (H), and oxygen (O) fractions of the delivered gas mixtures and temperature. It was also found that CH4-rich gas mixtures caused irreversible damage, whereas atomically equivalent CO-rich compositions did not. The coking threshold predicted by thermodynamic equilibrium calculations employing graphite for the solid carbon phase agreed well with empirical thresholds at 700 °C (Uf ≈ 32%); however, at 600 °C, poor agreement was observed with the empirical threshold of ∼36%. Finally, cell operating temperatures correlated well with the difference in enthalpy between the supplied anode gas mixtures and their resulting thermodynamic equilibrium gas mixtures.

  14. Utility of serum periostin in combination with exhaled nitric oxide in the management of asthma

    Directory of Open Access Journals (Sweden)

    Tadao Nagasaki

    2017-07-01

    Full Text Available Type-2/eosinophilic inflammation plays a pivotal role in asthma. The identification of severe type-2/eosinophilic asthma is important for improving the management of patients with asthma. Therefore, efforts to develop non-invasive biomarkers for type-2/eosinophilic airway inflammation have been made during this decade. Currently, fraction of exhaled nitric oxide (FeNO and serum periostin levels are considered markers of type-2/eosinophilic inflammation in asthma. However, a single-marker approach has limited the ability to diagnose severe type-2/eosinophilic asthma accurately and predict disease outcomes precisely. The present article reviews the utility of FeNO and serum periostin levels in a single-marker approach and in a multiple-marker approach in identifying patients with severe type-2/eosinophilic asthma. Furthermore, based on a sub-analysis of the Kinki Hokuriku Airway disease Conference (KiHAC, geno-endo-phenotypes of patients were stratified into four groups according to the FeNO and serum periostin levels.

  15. Potentiometric urea biosensor utilizing nanobiocomposite of chitosan-iron oxide magnetic nanoparticles

    International Nuclear Information System (INIS)

    Ali, A; Israr, M Q; Sadaf, J R; Nur, O; Willander, M; AlSalhi, M S; Atif, M; Ansari, Anees A; Ahmed, E

    2013-01-01

    The iron oxide (Fe 3 O 4 ) magnetic nanoparticles have been fabricated through a simple, cheap and reproducible approach. Scanning electron microscope, x-rays powder diffraction of the fabricated nanoparticles. Furthermore, the fabrication of potentiometric urea biosensor is carried out through drop casting the initially prepared isopropanol and chitosan solution, containing Fe 3 O 4 nanoparticles, on the glass fiber filter with a diameter of 2 cm and a copper wire (of thickness −500 μm) has been utilized to extract the voltage signal from the functionalized nanoparticles. The functionalization of surface of the Fe 3 O 4 nanoparticles is obtained by the electrostatically immobilization of urease onto the nanobiocomposite of the chitosan- Fe 3 O 4 in order to enhance the sensitivity, specificity, stability and reusability of urea biosensor. Electrochemical detection procedure has been adopted to measure the potentiometric response over the wide logarithmic concentration range of the 0.1 mM to 80 mM. The Fe 3 O 4 nanoparticles based urea biosensor depicts good sensitivity with ∼42 mV per decade at room temperature. Durability of the biosensor could be considerably enhanced by applying a thin layer of the nafion. In addition, the reasonably stable output response of the biosensor has been found to be around 12 sec.

  16. Nitric oxide nanoparticles: pre-clinical utility as a therapeutic for intramuscular abscesses.

    Science.gov (United States)

    Schairer, David; Martinez, Luis R; Blecher, Karin; Chouake, Jason; Nacharaju, Parimala; Gialanella, Philip; Friedman, Joel M; Nosanchuk, Joshua D; Friedman, Adam

    2012-01-01

    Nitric oxide (NO) is a critical component of host defense against invading pathogens; however, its therapeutic utility is limited due to a lack of practical delivery systems. Recently, a NO-releasing nanoparticulate platform (NO-np) was shown to have in vitro broad-spectrum antimicrobial activity and in vivo pre-clinical efficacy in a dermal abscess model. To extend these findings, both topical (TP) and intralesional (IL) NO-np administration was evaluated in a MRSA intramuscular murine abscess model and compared with vancomycin. All treatment arms accelerated abscess clearance clinically, histologically, and by microbiological assays on both days 4 and 7 following infection. However, abscesses treated with NO-np via either route demonstrated a more substantial, statistically significant decrease in bacterial survival based on colony forming unit assays and histologically revealed less inflammatory cell infiltration and preserved muscular architecture. These data suggest that the NO-np may be an effective addition to our armament for deep soft tissue infections.

  17. Epitaxy physical principles and technical implementation

    CERN Document Server

    Herman, Marian A; Sitter, Helmut

    2004-01-01

    Epitaxy provides readers with a comprehensive treatment of the modern models and modifications of epitaxy, together with the relevant experimental and technological framework. This advanced textbook describes all important aspects of the epitaxial growth processes of solid films on crystalline substrates, including a section on heteroepitaxy. It covers and discusses in details the most important epitaxial growth techniques, which are currently widely used in basic research as well as in manufacturing processes of devices, namely solid-phase epitaxy, liquid-phase epitaxy, vapor-phase epitaxy, including metal-organic vapor-phase epitaxy and molecular-beam epitaxy. Epitaxy’s coverage of science and texhnology thin-film is intended to fill the need for a comprehensive reference and text examining the variety of problems related to the physical foundations and technical implementation of epitaxial crystallization. It is intended for undergraduate students, PhD students, research scientists, lecturers and practic...

  18. Epitaxial ZnO gate dielectrics deposited by RF sputter for AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistors

    Science.gov (United States)

    Yoon, Seonno; Lee, Seungmin; Kim, Hyun-Seop; Cha, Ho-Young; Lee, Hi-Deok; Oh, Jungwoo

    2018-01-01

    Radio frequency (RF)-sputtered ZnO gate dielectrics for AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistors (MOS-HEMTs) were investigated with varying O2/Ar ratios. The ZnO deposited with a low oxygen content of 4.5% showed a high dielectric constant and low interface trap density due to the compensation of oxygen vacancies during the sputtering process. The good capacitance-voltage characteristics of ZnO-on-AlGaN/GaN capacitors resulted from the high crystallinity of oxide at the interface, as investigated by x-ray diffraction and high-resolution transmission electron microscopy. The MOS-HEMTs demonstrated comparable output electrical characteristics with conventional Ni/Au HEMTs but a lower gate leakage current. At a gate voltage of -20 V, the typical gate leakage current for a MOS-HEMT with a gate length of 6 μm and width of 100 μm was found to be as low as 8.2 × 10-7 mA mm-1, which was three orders lower than that of the Ni/Au Schottky gate HEMT. The reduction of the gate leakage current improved the on/off current ratio by three orders of magnitude. These results indicate that RF-sputtered ZnO with a low O2/Ar ratio is a good gate dielectric for high-performance AlGaN/GaN MOS-HEMTs.

  19. Molecular beam epitaxy for the future

    International Nuclear Information System (INIS)

    Takahashi, K.

    1984-01-01

    Molecular beam epitaxy (MBE) is most commonly used to fabricate super-lattices, high electron mobility transistors, multi-quantum well lasers and other new semiconductor devices by utilizing its excellent controlability. MBE for the future is presumed to include techniques such as metalorganic chemical vapor deposition, photochemical reaction process using gas sources and ion implantation. A report on the crystal growth of GaAs using metalorganics, trimethylgallium and triethylgallium, which are usually used in chemical vapor deposition, as gaseous sources of gallium in an MBE system is made. (Author) [pt

  20. Structure and Properties of Epitaxial Dielectrics on gallium nitride

    Science.gov (United States)

    Wheeler, Virginia Danielle

    upward band bending at the surface, which should be considered when determining heterojunction band offsets with GaN. Epitaxial La2O3 and Sc2O3 were successfully deposited on GaN by molecular beam epitaxy (MBE). Sc 2O3 exhibited a cubic bixbyite crystal structure, while La 2O3 had a mix of both cubic and hexagonal crystal structures. A highly defective structure was observed for La2O3, compared to Sc2O3, which results from its larger mismatch with GaN (14.5% and 8.9%, respectively). TEM images indicated an abrupt atomic interface for Sc2O3 films, but an interfacial layer was observed for La2O3 on GaN. Additionally, La 2O3 was shown to be extremely reactive with water and carbon dioxide in air, forming both hydroxides and carbonates within 15 minutes of exposure. Therefore, tantalum and silicon were investigated as in-situ capping metals to prevent these deleterious effects. XPS was utilized to determine a valence band offset (VBO) and conduction band offset of 1.9 +/- 0.1 eV and 0.9 +/- 0.1 eV for La2O 3 on GaN. Similarly, Sc2O3 had a VBO and CBO of 0.8 +/- 0.1 eV and 2.1 +/- 0.1 eV, respectively. Both oxides exhibited sufficient band offsets to prevent thermionic emission of carriers, even at high operation temperatures, making them good candidates for insulator layers in high temperature, high power applications. Preliminary C-V curves, for La2O3 and Sc2 O3 MOS capacitors, showed large charge accumulation layers, extremely high permittivity values, and low hysteresis windows indicative of low density of interface traps and fixed oxide charges. I-V curves showed a reduction in leakage current density for both oxides compared to Si 3N4, a readily used gate dielectric for GaN devices. The larger reduction achieved with La2O3 films is attributed to a passivating interfacial layer that minimizes the amount of dislocations propagating into the oxide. These preliminary results point to the viability of these gate oxides in GaN MOSFET devices.

  1. Method of preparing and utilizing a catalyst system for an oxidation process on a gaseous hydrocarbon stream

    Science.gov (United States)

    Berry, David A; Shekhawat, Dushyant; Smith, Mark; Haynes, Daniel

    2013-07-16

    The disclosure relates to a method of utilizing a catalyst system for an oxidation process on a gaseous hydrocarbon stream with a mitigation of carbon accumulation. The system is comprised of a catalytically active phase deposited onto an oxygen conducting phase, with or without supplemental support. The catalytically active phase has a specified crystal structure where at least one catalytically active metal is a cation within the crystal structure and coordinated with oxygen atoms within the crystal structure. The catalyst system employs an optimum coverage ratio for a given set of oxidation conditions, based on a specified hydrocarbon conversion and a carbon deposition limit. Specific embodiments of the catalyst system are disclosed.

  2. Anisotropic-strain-relaxation-induced crosshatch morphology in epitaxial SrTiO{sub 3}/NdGaO{sub 3} thin films

    Energy Technology Data Exchange (ETDEWEB)

    Tan, X. L.; Chen, F.; Chen, P. F.; Xu, H. R.; Chen, B. B.; Jin, F.; Gao, G. Y.; Wu, W. B., E-mail: wuwb@ustc.edu.cn [Hefei National Laboratory for Physical Sciences at Microscale, University of Science and Technology of China, and High Magnetic Field Laboratory, Chinese Academy of Sciences, Hefei 230026 (China)

    2014-10-15

    We investigate the strain relaxation and surface morphology of epitaxial SrTiO{sub 3} (STO) films grown on (001){sub O} and (110){sub O} planes of orthorhombic NdGaO{sub 3} (NGO), and (001) plane of cubic (LaAlO{sub 3}){sub 0.3}(Sr{sub 2}AlTaO{sub 6}){sub 0.7} (LSAT) substrates. Although the average lattice mismatches are similar, strikingly regular crosshatched surface patterns can be found on STO/NGO(001){sub O}[(110){sub O}] films, contrary to the uniform surface of STO/LSAT(001). Based on the orientation and thickness dependent patterns and high-resolution x-ray diffractions, we ascribe the crosshatch morphology to the anisotropic strain relaxation with possibly the 60° misfit dislocation formation and lateral surface step flow in STO/NGO films, while an isotropic strain relaxation in STO/LSAT. Further, we show that the crosshatched STO/NGO(110){sub O} surface could be utilized as a template to modify the magnetotransport properties of epitaxial La{sub 0.6}Ca{sub 0.4}MnO{sub 3} films. This study highlights the crucial role of symmetry mismatch in determining the surface morphology of the perovskite oxide films, in addition to their epitaxial strain states, and offers a different route for designing and fabricating functional perovskite-oxide devices.

  3. Epitaxial YBa2Cu3O7-δ/Sr2RuO4 heterostructures

    International Nuclear Information System (INIS)

    Schlom, D.G.; Merritt, B.A.; Madhavan, S.

    1997-01-01

    The anisotropic oxide superconductors YBa 2 Cu 3 O 7-δ and Sr 2 RuO 4 have been epitaxially combined in various ways (c-axis on c-axis, c-axis on a-axis, and a-axis on a-axis) though the use of appropriate substrates. Phase-pure a-axis oriented or c-axis oriented epitaxial Sr 2 RuO 4 films were grown by pulsed laser deposition. YBa 2 Cu 3 O 7-δ films were then grown on both orientations of Sr 2 RuO 4 films and the resulting epitaxy was characterized

  4. Nitrous oxide for labor analgesia: Utilization and predictors of conversion to neuraxial analgesia.

    Science.gov (United States)

    Sutton, Caitlin D; Butwick, Alexander J; Riley, Edward T; Carvalho, Brendan

    2017-08-01

    We examined the characteristics of women who choose nitrous oxide for labor analgesia and identified factors that predict conversion from nitrous oxide to labor neuraxial analgesia. Retrospective descriptive study. Labor and Delivery Ward. 146 pregnant women who used nitrous oxide for analgesia during labor and delivery between September 2014 and September 2015. Chart review only. Demographic, obstetric, and intrapartum characteristics of women using nitrous oxide were examined. Multivariable logistic regression was performed to identify factors associated with conversion from nitrous oxide to neuraxial analgesia. Data are presented as n (%), median [IQR], adjusted relative risk (aRR), and 95% confidence intervals (CI) as appropriate. During the study period, 146 women used nitrous oxide for labor analgesia (accounting for 3% of the total deliveries). The majority (71.9%) of women who used nitrous oxide were nulliparous, and over half (51.9%) had expressed an initial preference for "nonmedical birth." The conversion rate to neuraxial blockade was 63.2%, compared to a concurrent institutional rate of 85.1% in women who did not use nitrous oxide. Factors associated with conversion from nitrous oxide to neuraxial blockade were labor induction (aRR=2.0, CI 1.2-3.3) and labor augmentation (aRR=1.7, CI 1.0-2.9). Only a small number of women opted to use nitrous oxide during labor, analgesia was minimal, and most converted to neuraxial analgesia. Women with induced and augmented labors should be counseled about the increased likelihood that they will convert to neuraxial analgesia. Copyright © 2017 Elsevier Inc. All rights reserved.

  5. LARGE-SCALE MECURY CONTROL TECHNOLOGY TESTING FOR LIGNITE-FIRED UTILITIES-OXIDATION SYSTEMS FOR WET FGD

    Energy Technology Data Exchange (ETDEWEB)

    Michael J. Holmes; Steven A. Benson; Jeffrey S. Thompson

    2004-03-01

    The Energy & Environmental Research Center (EERC) is conducting a consortium-based effort directed toward resolving the mercury (Hg) control issues facing the lignite industry. Specifically, the EERC team--the EERC, EPRI, URS, ADA-ES, Babcock & Wilcox, the North Dakota Industrial Commission, SaskPower, and the Mercury Task Force, which includes Basin Electric Power Cooperative, Otter Tail Power Company, Great River Energy, Texas Utilities (TXU), Montana-Dakota Utilities Co., Minnkota Power Cooperative, BNI Coal Ltd., Dakota Westmoreland Corporation, and the North American Coal Company--has undertaken a project to significantly and cost-effectively oxidize elemental mercury in lignite combustion gases, followed by capture in a wet scrubber. This approach will be applicable to virtually every lignite utility in the United States and Canada and potentially impact subbituminous utilities. The oxidation process is proven at the pilot-scale and in short-term full-scale tests. Additional optimization is continuing on oxidation technologies, and this project focuses on longer-term full-scale testing. The lignite industry has been proactive in advancing the understanding of and identifying control options for Hg in lignite combustion flue gases. Approximately 1 year ago, the EERC and EPRI began a series of Hg-related discussions with the Mercury Task Force as well as utilities firing Texas and Saskatchewan lignites. This project is one of three being undertaken by the consortium to perform large-scale Hg control technology testing to address the specific needs and challenges to be met in controlling Hg from lignite-fired power plants. This project involves Hg oxidation upstream of a system equipped with an electrostatic precipitator (ESP) followed by wet flue gas desulfurization (FGD). The team involved in conducting the technical aspects of the project includes the EERC, Babcock & Wilcox, URS, and ADA-ES. The host sites include Minnkota Power Cooperative Milton R. Young

  6. The novel zinc cluster regulator Tog1 plays important roles in oleate utilization and oxidative stress response in Saccharomyces cerevisiae

    Energy Technology Data Exchange (ETDEWEB)

    Thepnok, Piyasuda; Ratanakhanokchai, Khanok; Soontorngun, Nitnipa, E-mail: nitnipa.soo@kmutt.ac.th

    2014-08-08

    Highlights: • TOG1 deletion results in defective growth on non-fermentable carbon sources. • Removal of TOG1 sensitizes cells to oxidative stress. • Tog1 directly binds and activates expression of oleate utilizing genes. • The Δtog1 cells display reduced peroxisomal content in oleate culture. • S. cerevisiae zinc cluster Tog1 is a novel activator of oleate utilization. - Abstract: Many zinc cluster proteins have been shown to play a role in the transcriptional regulation of glucose-repressible genes during glucose exhaustion and diauxic shift. Here, we studied an additional member of this family called Yer184c (herein called Tog1) for transcriptional regulator of oleate. Our results showed that a Δtog1 strain displays impaired growth with several non-fermentable carbons. Tog1 is also implicated in oxidative stress tolerance. Importantly, during the glucose–oleate shift, combined results from quantitative real time-PCR and chromatin immunoprecipitation (ChIP) experiments showed that Tog1 acts as a direct activator of oleate utilizing genes, encoded key enzymes in β-Oxidation and NADPH regeneration (POX1, FOX2, POT1 and IDP2), the glyoxylate shunt (MLS1 and ICL1), and gluconeogenesis (PCK1 and FBP1). A transmission electron microscopy (TEM) analysis of the Δtog1 strain assayed with oleate also revealed a substantial decrease in peroxisome abundance that is vital for fatty acid oxidation. Overall, our results clearly demonstrated that Tog1 is a newly characterized zinc cluster regulator that functions in the complex network of non-fermentable carbon metabolism in Saccharomycescerevisiae.

  7. MgO monolayer epitaxy on Ni (100)

    Science.gov (United States)

    Sarpi, B.; Putero, M.; Hemeryck, A.; Vizzini, S.

    2017-11-01

    The growth of two-dimensional oxide films with accurate control of their structural and electronic properties is considered challenging for engineering nanotechnological applications. We address here the particular case of MgO ultrathin films grown on Ni (100), a system for which neither crystallization nor extended surface ordering has been established previously in the monolayer range. Using Scanning Tunneling Microscopy and Auger Electron Spectroscopy, we report on experiments showing MgO monolayer (ML) epitaxy on a ferromagnetic nickel surface, down to the limit of atomic thickness. Alternate steps of Mg ML deposition, O2 gas exposure, and ultrahigh vacuum thermal treatment enable the production of a textured film of ordered MgO nano-domains. This study could open interesting prospects for controlled epitaxy of ultrathin oxide films with a high magneto-resistance ratio on ferromagnetic substrates, enabling improvement in high-efficiency spintronics and magnetic tunnel junction devices.

  8. Solid oxide fuel cell bi-layer anode with gadolinia-doped ceria for utilization of solid carbon fuel

    Energy Technology Data Exchange (ETDEWEB)

    Kellogg, Isaiah D. [Department of Mechanical and Aerospace Engineering, Missouri University of Science and Technology, 290A Toomey Hall, 400 West 13th Street, Rolla, MO 65409 (United States); Department of Materials Science and Engineering, Missouri University of Science and Technology, 223 McNutt Hall, 1400 N. Bishop, Rolla, MO 65409 (United States); Koylu, Umit O. [Department of Mechanical and Aerospace Engineering, Missouri University of Science and Technology, 290A Toomey Hall, 400 West 13th Street, Rolla, MO 65409 (United States); Dogan, Fatih [Department of Materials Science and Engineering, Missouri University of Science and Technology, 223 McNutt Hall, 1400 N. Bishop, Rolla, MO 65409 (United States)

    2010-11-01

    Pyrolytic carbon was used as fuel in a solid oxide fuel cell (SOFC) with a yttria-stabilized zirconia (YSZ) electrolyte and a bi-layer anode composed of nickel oxide gadolinia-doped ceria (NiO-GDC) and NiO-YSZ. The common problems of bulk shrinkage and emergent porosity in the YSZ layer adjacent to the GDC/YSZ interface were avoided by using an interlayer of porous NiO-YSZ as a buffer anode layer between the electrolyte and the NiO-GDC primary anode. Cells were fabricated from commercially available component powders so that unconventional production methods suggested in the literature were avoided, that is, the necessity of glycine-nitrate combustion synthesis, specialty multicomponent oxide powders, sputtering, or chemical vapor deposition. The easily-fabricated cell was successfully utilized with hydrogen and propane fuels as well as carbon deposited on the anode during the cyclic operation with the propane. A cell of similar construction could be used in the exhaust stream of a diesel engine to capture and utilize soot for secondary power generation and decreased particulate pollution without the need for filter regeneration. (author)

  9. Preparation and Characterization of Epitaxial VO2 Films on Sapphire Using Postepitaxial Topotaxy Route via Epitaxial V2O3 Films

    Science.gov (United States)

    Yamaguchi, Iwao; Manabe, Takaaki; Tsuchiya, Tetsuo; Nakajima, Tomohiko; Sohma, Mitsugu; Kumagai, Toshiya

    2008-02-01

    Epitaxial VO2 films were prepared on the C-planes of α-Al2O3 substrates by a metal organic deposition (MOD) process. It was difficult to obtain the single phase of (010)M-oriented VO2 films, in which the subscript M refers to the monoclinic indices, by the heat treatment of amorphous precursor films in the VO2-stable region after the pyrolysis of the coating solution. The product films consisted of discontinuous circular grains of 1-2 µm size on the substrate surface. Therefore, we prepared the (010)M-oriented epitaxial VO2 films using postepitaxial topotaxy (PET), that is, topotactic oxidation of (0001)-oriented epitaxial V2O3 films. First, epitaxial V2O3(0001) films were obtained by MOD starting with a vanadium naphthenate solution. Second, the epitaxial V2O3(0001) films were topotactically oxidized at 500 °C in an Ar-O2 gas mixture with pO2 = 10-4 atm to obtain (010)M-oriented epitaxial VO2 films. The epitaxial relationships were VO2(010)M ∥ α-Al2O3(0001) and VO2[100]M ∥ α-Al2O3[0110], [1010], [1100]. The VO2(010)M films exhibited metal-semiconductor transitions with hysteresis loops at 60-80 °C. The resistivity change before and after the transition of the VO2(010)M film oxidized for 6 h was three orders of magnitude.

  10. Diagnostic utility of fractional exhaled nitric oxide in prolonged and chronic cough according to atopic status

    Directory of Open Access Journals (Sweden)

    Takamitsu Asano

    2017-04-01

    Conclusions: Although high FeNO levels suggested the existence of AC, lower FeNO levels had limited diagnostic significance. Atopic status affects the utility of FeNO levels in the differential diagnosis of prolonged and chronic cough.

  11. Crystallization engineering as a route to epitaxial strain control

    Directory of Open Access Journals (Sweden)

    Andrew R. Akbashev

    2015-10-01

    Full Text Available The controlled synthesis of epitaxial thin films offers opportunities for tuning their functional properties via enabling or suppressing strain relaxation. Examining differences in the epitaxial crystallization of amorphous oxide films, we report on an alternate, low-temperature route for strain engineering. Thin films of amorphous Bi–Fe–O were grown on (001SrTiO3 and (001LaAlO3 substrates via atomic layer deposition. In situ X-ray diffraction and X-ray photoelectron spectroscopy studies of the crystallization of the amorphous films into the epitaxial (001BiFeO3 phase reveal distinct evolution profiles of crystallinity with temperature. While growth on (001SrTiO3 results in a coherently strained film, the same films obtained on (001LaAlO3 showed an unstrained, dislocation-rich interface, with an even lower temperature onset of the perovskite phase crystallization than in the case of (001SrTiO3. Our results demonstrate how the strain control in an epitaxial film can be accomplished via its crystallization from the amorphous state.

  12. Semiconductors and semimetals epitaxial microstructures

    CERN Document Server

    Willardson, Robert K; Beer, Albert C; Gossard, Arthur C

    1994-01-01

    Newly developed semiconductor microstructures can now guide light and electrons resulting in important consequences for state-of-the-art electronic and photonic devices. This volume introduces a new generation of epitaxial microstructures. Special emphasis has been given to atomic control during growth and the interrelationship between the atomic arrangements and the properties of the structures.Key Features* Atomic-level control of semiconductor microstructures* Molecular beam epitaxy, metal-organic chemical vapor deposition* Quantum wells and quantum wires* Lasers, photon(IR)detectors, heterostructure transistors

  13. A novel method for imitating nacre by utilizing magnetic graphene oxide and its magnetic field alignment in polymer nanocomposites

    Science.gov (United States)

    Liu, Zhenxiang; Jiao, Weicheng; Yan, Meiling; Li, Jun; Ding, Guomin; Wang, Rongguo

    2018-02-01

    The way gas molecules penetrate the resin matrix composites are generally divided into diffusion penetration and destruction penetration. Through theoretical analysis, the larger the nanoscale layers, the smaller the penetration effect in the directional nanosheets reinforced resin matrix composites. To control destruction penetration, the cracks should be reduced by toughening resin matrix composites. In order to solve these two kinds of leakage, the magnetic graphene oxide is connected to mimic nacre while L- glutamic acid is used as binder and the directional solidification is also utilized. Compared with pure resin, only 0.13 wt% monolithic magnetic graphene oxide and its interbed reinforced composites can reduce the leakage of He by 36.4% and 52.0% respectively, and the toughness of composites is validated to increase 4.0% and 20.3% respectively. This toughening mechanism is similar to that of nacre.

  14. Development of accident tolerant FeCrAl-ODS steels utilizing Ce-oxide particles dispersion

    Science.gov (United States)

    Shibata, Hiroki; Ukai, Shigeharu; Oono, Naoko H.; Sakamoto, Kan; Hirai, Mutsumi

    2018-04-01

    FeCrAl-ODS ferritic steels with Ce-oxide dispersion instead of Y-oxide were produced for the accident tolerant fuel cladding of the light water reactor. Excess oxygen (Ex.O) was added to improve the mechanical property. The tensile strength at Ex.O = 0 is around 200 MPa at 700 °C, mainly owing to dispersed Ce2O3 particles in less than 10 nm size. The formation of the fine Ce2O3 particles is dominated by a coherent interface with ferritic matrix. With increasing Ex.O, an increased of number density of coarser Ce-Al type oxide particles over 10 nm size is responsible for the improvement of the tensile strength. Change of the type of oxide particle, CeO2, Ce2O3, CeAlO3, Al2O3, in FeCrAl-ODS steel was thermodynamically analyzed as a parameter of Ex.O.

  15. The synthesis of a pyridine-: N -oxide isophthalamide rotaxane utilizing supplementary amide hydrogen bond interactions

    OpenAIRE

    Evans, Nicholas Henley; Gell, Charlie; Peach, Michael Joseph George

    2016-01-01

    The synthesis of a pyridine-N-oxide containing rotaxane, not requiring an additional ionic template, has been achieved in 32% yield. Successful rotaxane formation is dependent upon the structure of the isophthalamide macrocycle used, an observation which has been rationalised by a combination of NMR spectroscopy, X-ray crystallography and computational modelling.

  16. Correction: Large-scale electricity storage utilizing reversible solid oxide cells combined with underground storage of CO2 and CH4

    DEFF Research Database (Denmark)

    Jensen, Søren Højgaard; Graves, Christopher R.; Mogensen, Mogens Bjerg

    2017-01-01

    Correction for ‘Large-scale electricity storage utilizing reversible solid oxide cells combined with underground storage of CO2 and CH4’ by S. H. Jensen et al., Energy Environ. Sci., 2015, 8, 2471–2479.......Correction for ‘Large-scale electricity storage utilizing reversible solid oxide cells combined with underground storage of CO2 and CH4’ by S. H. Jensen et al., Energy Environ. Sci., 2015, 8, 2471–2479....

  17. Thorium utilization as a Pu-burner: proposal of Plutonium-Thorium Mixed Oxide (PT-MOX) Project

    International Nuclear Information System (INIS)

    Aizawa, Otohiko

    2000-01-01

    In this paper, a Pu-Th mixed oxide (PT-MOX) project is proposed for a thorium utilization and a plutonium burning. None of plutonium can be newly produced from PT-MOX fuel, and the plutonium mass of about 1 ton can be consumed with one reactor (total heavy metal assumed: 100 tons) for 1 year. In order to consume plutonium produced from usual Light Water Reactor, it should be better to operate one PT-MOX reactor for three to five Light Water Reactors. (author)

  18. Molecular beam epitaxy applications to key materials

    CERN Document Server

    Farrow, Robin F C

    1995-01-01

    In this volume, the editor and contributors describe the use of molecular beam epitaxy (MBE) for a range of key materials systems that are of interest for both technological and fundamental reasons. Prior books on MBE have provided an introduction to the basic concepts and techniques of MBE and emphasize growth and characterization of GaAs-based structures. The aim in this book is somewhat different; it is to demonstrate the versatility of the technique by showing how it can be utilized to prepare and explore a range of distinct and diverse materials. For each of these materials systems MBE has played a key role both in their development and application to devices.

  19. Pretreatment of Reed by Wet Oxidation and Subsequent Utilization of the Pretreated Fibers for Ethanol Production

    DEFF Research Database (Denmark)

    Szijarto, Nora; Kádár, Zsófia; Varga, Eniko

    2009-01-01

    lignocelluloses usually do. In the present study, wet oxidation was investigated as the pretreatment method to enhance the enzymatic digestibility of reed cellulose to soluble sugars and thus improve the convertibility of reed to ethanol. The most effective treatment increased the digestibility of reed cellulose...... of cellulose to glucose was 82.4%. Simultaneous saccharification and fermentation of pretreated solids resulted in a final ethanol concentration as high as 8.7 g/L, yielding 73% of the theoretical....

  20. Combination of Asymmetric Supercapacitor Utilizing Activated Carbon and Nickel Oxide with Cobalt Polypyridyl-Based Dye-Sensitized Solar Cell

    International Nuclear Information System (INIS)

    Bagheri, Narjes; Aghaei, Alireza; Ghotbi, Mohammad Yeganeh; Marzbanrad, Ehsan; Vlachopoulos, Nick; Häggman, Leif; Wang, Michael; Boschloo, Gerrit; Hagfeldt, Anders; Skunik-Nuckowska, Magdalena; Kulesza, Pawel J.

    2014-01-01

    Highlights: • Dye Solar Cell and supercapacitor are integrated into a single device capable of generation and storage of energy. • The solar cell part of the device utilizes the Co-based electrolyte and nickel/PEDOT counter electrode. • A cobalt-doped nickel oxide together with activated carbon is used in the capacitor part of the device. • The integrated photocapacitor is characterized by the capacitance of 32 F g −1 and the total efficiency of 0.6%. - Abstract: A dye-sensitized solar cell (DSC) based on the metal-free organic sensitizer and the cobalt (II, III) polypyridyl electrolyte was integrated here within an asymmetric supercapacitor utilizing cobalt-doped nickel oxide and activated carbon as positive and negative electrodes, respectively. A low cost nickel foil served as intermediate (auxiliary) bifunctional electrode separating two parts of the device and permitting the DSC electrolyte regeneration at one side and charge storage within cobalt-doped nickel oxide at the other. The main purpose of the research was to develop an integrated photocapacitor system capable of both energy generation and its further storage. Following irradiation at the 100 mW cm −2 level, the solar cell generated an open-circuit voltage of 0.8 V and short-circuit current of 8 mA cm −2 which corresponds to energy conversion efficiency of 4.9%. It was further shown that upon integration with asymmetric supercapacitor, the photogenerated energy was directly injected into porous charge storage electrodes thus resulting in specific capacitance of 32 F g −1 and energy density of 2.3 Wh kg −1 . The coulumbic and total (energy conversion and charge storage) efficiency of photocapacitor were equal to 54% and 0.6%, respectively

  1. Productive performance and efficiency of utilization of the diet components in dairy cows fed castor meal treated with calcium oxide

    Directory of Open Access Journals (Sweden)

    Juliana Variz Cobianchi

    2012-10-01

    Full Text Available The effect of replacing of 0; 0.33; 0.67 and 1.0 (kg/kg of soybean meal (SBM by undecorticated castor seed meal treated with calcium oxide (CMT - 60 g/kg was evaluated on performance and efficiency of nutrient utilization in dairy cows. Sixteen Holstein and crossbred cows were distributed in four 4 × 4 latin squares. Animals received concentrated feed at a ratio of 1 kg for 3 kg of milk produced, in the natural matter. The diets had the same amount of nitrogen (150.4 g crude protein/kg DM, containing 325.6 g of concentrated feed/kg DM. There was no effect on the serum concentration of transaminase and the animals showed no clinical symptoms of intoxication by ricin. The intake of DM, crude protein (CP and non-fibrous carbohydrates (NFC reduced from 0.67 replacement of SBM by CMT. The intake of neutral detergent fibers corrected for ash and protein (NDFap increased from 0.33 replacement of SBM with CMT. Although the digestibility of dietary components decreased from 0.33 replacement, the intake of digestible components only reduced from 0.67 replacement. Because of the reduction of digestible energy, the synthesis of microbial CP and the utilization efficiency of rumen-degradable protein for the synthesis of microbial CP reduced with full replacement of SBM by CMT. Milk yield, milk composition, daily variation of body weight and the efficiency of utilization of the nutrients for the synthesis of N in milk reduced from 0.67 replacement of SBM by CMT. Castor seed meal treated with calcium oxide can replace up to 0.33 of SBM (50 g/kg DM diet DM in the diet of dairy cows with an average milk production of 20 kg/day.

  2. A 1,2-propylene oxide sensor utilizing cataluminescence on CeO2 nanoparticles.

    Science.gov (United States)

    Liu, Hongmei; Zhang, Yantu; Zhen, Yanzhong; Ma, Yuan; Zuo, Weiwei

    2014-12-01

    A simple and sensitive gas sensor was proposed for the determination of 1,2-propylene oxide (PO) based on its cataluminescence (CTL) by oxidation in the air on the surface of CeO2 nanoparticles. The luminescence characteristics and optimal conditions were investigated in detail. Under optimized conditions, the linear range of the CTL intensity versus the concentration of PO was 10-150 ppm, with a correlation coefficient (r) of 0.9974 and a limit of detection (S/N = 3) of 0.9 ppm. The relative standard deviation for 40 ppm PO was 1.2% (n = 7). There was no or only weak response to common foreign substances including acetone, formaldehyde, ethyl acetate, acetic acid, chloroform, propanol, carbon tetrachloride, ether and methanol. There was no significant change in the catalytic activity of the sensor for 100 h. The proposed method was simple and sensitive, with a potential of detecting PO in the environment and industry. Copyright © 2014 John Wiley & Sons, Ltd.

  3. Metal porphyrin intercalated reduced graphene oxide nanocomposite utilized for electrocatalytic oxygen reduction

    Directory of Open Access Journals (Sweden)

    Mingyan Wang

    2017-07-01

    Full Text Available In this paper, we report a simple and facile self-assembly method to successfully fabricate cationic metal porphyrin –MtTMPyP (Mt= Cobalt (II, Manganese (III, or Iron (III; TMPyP = 5, 10, 15, 20-tetrakis (N-methylpyridinium-4-yl porphyrin intercalated into the layer of graphene oxide (GO by the cooperative effects of electrostatic and π–π stacking interaction between positively charged metal porphyrin and negatively charged GO sheets. Followed by reduction with hydrazine vapor, a series of novel 2D MtTMPyP/rGOn were fabricated. The as-prepared 2D hybrids were fully characterized and tested as non-noble metal catalysts for oxygen reduction reaction (ORR in an alkaline medium. The MtTMPyP/rGOn hybrids, especially CoTMPyP/rGO5, demonstrated an improved electrocatalytic activity for ORR and a number of exchanged electrons close to 4-electron reaction, increased stability and excellent tolerance to methanol, showing a potential alternative catalyst for ORR in fuel cells and air batteries. Keywords: Metal porphyrin, Reduced graphene oxide, Intercalation, Oxygen reduction reaction, Catalyst

  4. Release mechanisms of acetaminophen from polyethylene oxide/polyethylene glycol matrix tablets utilizing magnetic resonance imaging.

    Science.gov (United States)

    Tajiri, Tomokazu; Morita, Shigeaki; Sakamoto, Ryosaku; Suzuki, Masazumi; Yamanashi, Shigeyuki; Ozaki, Yukihiro; Kitamura, Satoshi

    2010-08-16

    Release mechanism of acetaminophen (AAP) from extended-release tablets of hydrogel polymer matrices containing polyethylene oxide (PEO) and polyethylene glycol (PEG) were achieved using flow-through cell with magnetic resonance imaging (MRI). The hydrogel forming abilities are observed characteristically and the layer thickness which is corresponding to the diffusion length of AAP has a good correlation with the drug release profiles. In addition, polymeric erosion contribution to AAP releasing from hydrogel matrix tablets was directly quantified using size-exclusion chromatography (SEC). The matrix erosion profile indicates that the PEG erosion kinetic depends primarily on the composition ratio of PEG to PEO. The present study has confirmed that the combination of in situ MRI and SEC should be well suited to investigate the drug release mechanisms of hydrogel matrix such as PEO/PEG. Copyright (c) 2010 Elsevier B.V. All rights reserved.

  5. A novel pre-oxidation method for elemental mercury removal utilizing a complex vaporized absorbent

    Energy Technology Data Exchange (ETDEWEB)

    Zhao, Yi, E-mail: zhaoyi9515@163.com; Hao, Runlong; Guo, Qing

    2014-09-15

    Graphical abstract: - Highlights: • An innovative liquid-phase complex absorbent (LCA) for Hg{sup 0} removal was prepared. • A novel integrative process for Hg{sup 0} removal was proposed. • The simultaneous removal efficiencies of SO{sub 2}, NO and Hg{sup 0} were 100%, 79.5% and 80.4%, respectively. • The reaction mechanism of simultaneous removal of SO{sub 2}, NO and Hg{sup 0} was proposed. - Abstract: A novel semi-dry integrative method for elemental mercury (Hg{sup 0}) removal has been proposed in this paper, in which Hg{sup 0} was initially pre-oxidized by a vaporized liquid-phase complex absorbent (LCA) composed of a Fenton reagent, peracetic acid (CH{sub 3}COOOH) and sodium chloride (NaCl), after which Hg{sup 2+} was absorbed by the resultant Ca(OH){sub 2}. The experimental results indicated that CH{sub 3}COOOH and NaCl were the best additives for Hg{sup 0} oxidation. Among the influencing factors, the pH of the LCA and the adding rate of the LCA significantly affected the Hg{sup 0} removal. The coexisting gases, SO{sub 2} and NO, were characterized as either increasing or inhibiting in the removal process, depending on their concentrations. Under optimal reaction conditions, the efficiency for the single removal of Hg{sup 0} was 91%. Under identical conditions, the efficiencies of the simultaneous removal of SO{sub 2}, NO and Hg{sup 0} were 100%, 79.5% and 80.4%, respectively. Finally, the reaction mechanism for the simultaneous removal of SO{sub 2}, NO and Hg{sup 0} was proposed based on the characteristics of the removal products as determined by X-ray diffraction (XRD), atomic fluorescence spectrometry (AFS), the analysis of the electrode potentials, and through data from related research references.

  6. A novel pre-oxidation method for elemental mercury removal utilizing a complex vaporized absorbent

    International Nuclear Information System (INIS)

    Zhao, Yi; Hao, Runlong; Guo, Qing

    2014-01-01

    Graphical abstract: - Highlights: • An innovative liquid-phase complex absorbent (LCA) for Hg 0 removal was prepared. • A novel integrative process for Hg 0 removal was proposed. • The simultaneous removal efficiencies of SO 2 , NO and Hg 0 were 100%, 79.5% and 80.4%, respectively. • The reaction mechanism of simultaneous removal of SO 2 , NO and Hg 0 was proposed. - Abstract: A novel semi-dry integrative method for elemental mercury (Hg 0 ) removal has been proposed in this paper, in which Hg 0 was initially pre-oxidized by a vaporized liquid-phase complex absorbent (LCA) composed of a Fenton reagent, peracetic acid (CH 3 COOOH) and sodium chloride (NaCl), after which Hg 2+ was absorbed by the resultant Ca(OH) 2 . The experimental results indicated that CH 3 COOOH and NaCl were the best additives for Hg 0 oxidation. Among the influencing factors, the pH of the LCA and the adding rate of the LCA significantly affected the Hg 0 removal. The coexisting gases, SO 2 and NO, were characterized as either increasing or inhibiting in the removal process, depending on their concentrations. Under optimal reaction conditions, the efficiency for the single removal of Hg 0 was 91%. Under identical conditions, the efficiencies of the simultaneous removal of SO 2 , NO and Hg 0 were 100%, 79.5% and 80.4%, respectively. Finally, the reaction mechanism for the simultaneous removal of SO 2 , NO and Hg 0 was proposed based on the characteristics of the removal products as determined by X-ray diffraction (XRD), atomic fluorescence spectrometry (AFS), the analysis of the electrode potentials, and through data from related research references

  7. Van der Waals epitaxy of functional MoO{sub 2} film on mica for flexible electronics

    Energy Technology Data Exchange (ETDEWEB)

    Ma, Chun-Hao [Department of Electrical Engineering, National Tsing Hua University, 30013 Hsinchu, Taiwan (China); Department of Materials Science and Engineering, National Chiao Tung University, Hsinchu 30010, Taiwan (China); Lin, Jheng-Cyuan [Institute of Physics, Academia Sinica, Taipei 11529, Taiwan (China); Liu, Heng-Jui; Do, Thi Hien [Department of Materials Science and Engineering, National Chiao Tung University, Hsinchu 30010, Taiwan (China); Zhu, Yuan-Min; Zhan, Qian [School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing 100083 (China); Ha, Thai Duy; Juang, Jenh-Yih [Department of Electrophysics, National Chiao Tung University, Hsinchu 30010, Taiwan (China); He, Qing [Department of Physics, Durham University, Durham DH1 3LE (United Kingdom); Arenholz, Elke [Advanced Light Source, Lawrence Berkeley National Laboratory, Berkeley, California 94720 (United States); Chiu, Po-Wen, E-mail: pwchiu@ee.nthu.edu.tw [Department of Electrical Engineering, National Tsing Hua University, 30013 Hsinchu, Taiwan (China); Institute of Atomic and Molecular Sciences, Academia Sinica, Taipei 10617, Taiwan (China); Chu, Ying-Hao, E-mail: yhc@nctu.edu.tw [Department of Materials Science and Engineering, National Chiao Tung University, Hsinchu 30010, Taiwan (China); Institute of Physics, Academia Sinica, Taipei 11529, Taiwan (China); Department of Electrophysics, National Chiao Tung University, Hsinchu 30010, Taiwan (China)

    2016-06-20

    Flexible electronics have a great potential to impact consumer electronics and with that our daily life. Currently, no direct growth of epitaxial functional oxides on commercially available flexible substrates is possible. In this study, in order to address this challenge, muscovite, a common layered oxide, is used as a flexible substrate that is chemically similar to typical functional oxides. We fabricated epitaxial MoO{sub 2} films on muscovite via pulsed laser deposition technique. A combination of X-ray diffraction and transmission electron microscopy confirms van der Waals epitaxy of the heterostructures. The electrical transport properties of MoO{sub 2} films are similar to those of the bulk. Flexible or free-standing MoO{sub 2} thin film can be obtained and serve as a template to integrate additional functional oxide layers. Our study demonstrates a remarkable concept to create flexible electronics based on functional oxides.

  8. Epitaxial Garnets and Hexagonal Ferrites.

    Science.gov (United States)

    1982-04-20

    guide growth of the epitaxial YIG films. Aluminum or gallium substitu- tions for iron were used in combination with lanthanum substitutions for yttrium... gallate spinel sub- strates. There was no difficulty with nucleation in the melt and film quality appeared to be similar to that observed previously...hexagonal ferrites. We succeeded in growing the M-type lead hexaferrite (magnetoplumbite) on gallate spinel substrates. We found that the PbO-based

  9. Quantum Nanostructures by Droplet Epitaxy

    OpenAIRE

    Somsak Panyakeow

    2009-01-01

    Droplet epitaxy is an alternative growth technique for several quantum nanostructures. Indium droplets are distributed randomly on GaAs substrates at low temperatures (120-350'C). Under background pressure of group V elements, Arsenic and Phosphorous, InAs and InP nanostructures are created. Quantum rings with isotropic shape are obtained at low temperature range. When the growth thickness is increased, quantum rings are transformed to quantum dot rings. At high temperature range, anisotropic...

  10. Potential nitrous oxide yield of AOA vs. AOB and utilization of carbon and nitrogen in the ammonia oxidizing process in the Pearl River Estuary

    Science.gov (United States)

    Ma, L.; Dai, M.; Tan, S.; Xia, X.; Liu, H.

    2016-12-01

    Nitrous oxide (N2O), a greenhouse gas, is a by-product during ammonia oxidation process, the production of which is often stimulated under low dissolved oxygen (DO) in the estuarine environment. The potential yield of N2O has been considered to be driven by ammonia-oxidizing bacteria (AOB) of Betaproteobacteria & Gammaproteobacteria and/or ammonia-oxidizing archaea (AOA) of Thaumarchaeota. In order to examine the relative importance of AOA and AOB in producing N2O and in modulating the potential N2O yield, arch-amoA, beta-amoA, gamma-amoA encoding for the alpha subunit of the ammonia monooxygenase (AMO) are used as biomarkers to identify the distributions and bioactivities of AOA and AOB in the Pearl River Estuary (PRE). Size fractionation experiments were conducted to distinguish AOA and AOB on particles in different size-fractions of > 3 μm, 0.45-3 μm, and 0.22-0.45 μm. Pure culture of N. maritimusSCM1 was studied as a model organism to identify the organic carbon production during ammonia oxidation by SCM1 strains. Our results show that AOA distributes largely in the free-living state and could adapt to very limited ammonia substrate and low saturation of DO; AOB mainly distributes at the particle-attached state under relative richer ammonia and high DO conditions; however, the RNA/DNA ratio of AOB was higher than that of AOA under the same conditions suggesting AOB is relatively more actively expressed. In the upper reach of PRE, the dominant microorganism in the water column was AOB and the in situ N2O/NH3 therein ranged 0.73-3.74 ‰. In the lower PRE, AOA was dominated, and the in situ N2O/NH3 was of 1.17- 7.32‰. At selected sites, we estimated isotope effect (e) of AOA (eDIC/bulk) as -23.94‰ and AOB (eDIC/bulk) as -56.6‰ to -44.8‰, which is consistent with the studies of pure cultures. The coefficient of C sequestration "k", defined as (C biomass / DIC in situ) / (N biomass / ammonia in situ) to differ the utilization of carbon and nitrogen, of

  11. Epitaxial rare-earth superlattices and films

    International Nuclear Information System (INIS)

    Salamon, M.B.; Beach, R.S.; Flynn, C.P.; Matheny, A.; Tsui, F.; Rhyne, J.J.

    1992-01-01

    This paper reports on epitaxial growth of rare-earth superlattices which is demonstrated to have opened important new areas of research on magnetic materials. The propagation magnetic order through non-magnetic elements, including its range and anisotropy, has been studied. The importance of magnetostriction in determining the phase diagram is demonstrated by the changes induced by epitaxial clamping. The cyrstallinity of epitaxial superlattices provides the opportunity to study interfacial magnetism by conventional x-ray and neutron scattering methods

  12. Quantification of chlorine in zirconium oxide and biological samples by instrumental NAA utilizing PCF of Dhruva reactor

    International Nuclear Information System (INIS)

    Shinde, Amol D.; Reddy, A.V.R.; Acharya, R.; Balaji Rao, Y.

    2012-01-01

    Recently studies on chlorine contents in various samples are being pursued due to its corrosive nature. Chlorine present at trace level in various finished products as well as powder is used as a raw material for production of different types of zircaloys used as structural materials in nuclear technology. As a part of quality assurance program, it is necessary to quantify chlorine accurately with suitable and simple technique. In the present work we have applied instrumental neutron activation analysis (INAA) utilizing its short-lived activation product ( 38 Cl, 37 min, 1642 and 2168 keV) for its estimation. Pneumatic Carrier Facility (PCF) of Dhruva reactor, BARC was used sample irradiation of zirconium oxide dry powder, synthetic wax and IAEA RMs 1515 (Apple leaves) and Lichen 336. (author)

  13. Ge films grown on Si substrates by molecular-beam epitaxy below 450 deg. C

    International Nuclear Information System (INIS)

    Liu, J.; Kim, H.J.; Hul'ko, O.; Xie, Y.H.; Sahni, S.; Bandaru, P.; Yablonovitch, E.

    2004-01-01

    Ge thin films are grown on Si(001) substrates by molecular-beam epitaxy at 370 deg. C. The low-temperature epitaxial growth is compatible with the back-end thermal budget of current generation complementary metal-oxide-semiconductor technology, which is restricted to less than 450 deg. C. Reflection high-energy electron diffraction shows that single-crystal Ge thin films with smooth surfaces could be achieved below 450 deg. C. Double-axis x-ray θ/2θ scans also show that the epitaxial Ge films are almost fully strain-relaxed. As expected, cross-sectional transmission electron microscopy shows a network of dislocations at the interface. Hydrogen and oxide desorption techniques are proved to be necessary for improving the quality of the Ge films, which is reflected in improved minority carrier diffusion lengths and exceptionally low leakage currents

  14. On the Utility of Spinel Oxide Hosts for Magnesium-Ion Batteries.

    Science.gov (United States)

    Knight, James C; Therese, Soosairaj; Manthiram, Arumugam

    2015-10-21

    There is immense interest to develop Mg-ion batteries, but finding suitable cathode materials has been a challenge. The spinel structure has many advantages for ion insertion and has been successfully used in Li-ion batteries. We present here findings on the attempts to extract Mg from MgMn2O4-based spinels with acid (H2SO4) and with NO2BF4. The acid treatment was able to fully remove all Mg from MgMn2O4 by following a mechanism involving the disproportionation of Mn(3+), and the extraction rate decreased with increasing cation disorder. Samples with additional Mg(2+) ions in the octahedral sites (e.g., Mg1.1Mn1.9O4 and Mg1.5Mn1.5O4) also exhibit complete or near complete demagnesiation due to an additional mechanism involving ion exchange of Mg(2+) by H(+), but no Mg could be extracted from MgMnAlO4 due to the disruption of Mn-Mn interaction/contact across shared octahedral edges. In contrast, no Mg could be extracted with the oxidizing agent NO2BF4 from MgMn2O4 or Mg1.5Mn1.5O4 as the electrostatic repulsion between the divalent Mg(2+) ions prevents Mg(2+) diffusion through the 16c octahedral sites, unlike Li(+) diffusion, suggesting that spinels may not serve as potential hosts for Mg-ion batteries. The ability to extract Mg with acid in contrast to that with NO2BF4 is attributed to Mn dissolution from the lattice and the consequent reduction in electrostatic repulsion. The findings could provide insights toward the design of Mg hosts for Mg-ion batteries.

  15. Utilization of oxidation reactions for the spectrophotometric determination of captopril using brominating agents

    Science.gov (United States)

    El-Didamony, Akram M.; Erfan, Eman A. H.

    2010-03-01

    Three simple, accurate and sensitive methods (A-C) for the spectrophotometric assay of captopril (CPL) in bulk drug, in dosage forms and in the presence of its oxidative degradates have been described. The methods are based on the bromination of captopril with a solution of excess brominating mixture in hydrochloric acid medium. After bromination, the excess brominating mixture is followed by the estimation of surplus bromine by three different reaction schemes. In the first method (A), the determination of the residual bromine is based on its ability to bleach the indigo carmine dye and measuring the absorbance at 610 nm. Method B, involves treating the unreacted bromine with a measured excess of iron(II) and the remaining iron(II) is complexed with 1,10-phenanthroline and the increase in absorbance is measured at 510 nm. In method (C), the surplus bromine is treated with excess of iron(II) and the resulting iron(III) is complexed with thiocyanate and the absorbance is measured at 478 nm. In all the methods, the amount of bromine reacted corresponds to the drug content. The different experimental parameters affecting the development and stability of the color are carefully studied and optimized. Beer's law is valid within a concentration range of 0.4-6.0, 0.4-2.8 and 1.2-4.8 μg mL -1 for methods A, B and C, respectively. The calculated apparent molar absorptivity was found to be 5.16 × 10 4, 9.95 × 10 4 and 1.74 × 10 5 L mol -1 cm -1, for methods A, B and C, respectively. Sandell's sensitivity, correlation coefficients, detection and quantification limits are also reported. No interference was observed from common additives found in pharmaceutical preparations. The proposed methods are successfully applied to the determination of CPL in the tablet formulations with mean recoveries of 99.94-100.11% and the results were statistically compared with those of a reference method by applying Student's t- and F-test.

  16. Strain-induced oxygen vacancies in ultrathin epitaxial CaMnO3 films

    Science.gov (United States)

    Chandrasena, Ravini; Yang, Weibing; Lei, Qingyu; Delgado-Jaime, Mario; de Groot, Frank; Arenholz, Elke; Kobayashi, Keisuke; Aschauer, Ulrich; Spaldin, Nicola; Xi, Xiaoxing; Gray, Alexander

    Dynamic control of strain-induced ionic defects in transition-metal oxides is considered to be an exciting new avenue towards creating materials with novel electronic, magnetic and structural properties. Here we use atomic layer-by-layer laser molecular beam epitaxy to synthesize high-quality ultrathin single-crystalline CaMnO3 films with systematically varying coherent tensile strain. We then utilize a combination of high-resolution soft x-ray absorption spectroscopy and bulk-sensitive hard x-ray photoemission spectroscopy in conjunction with first-principles theory and core-hole multiplet calculations to establish a direct link between the coherent in-plane strain and the oxygen-vacancy content. We show that the oxygen vacancies are highly mobile, which necessitates an in-situ-grown capping layer in order to preserve the original strain-induced oxygen-vacancy content. Our findings open the door for designing and controlling new ionically active properties in strongly-correlated transition-metal oxides.

  17. Ferroelectric and piezoelectric properties of epitaxial PZT films and devices on silicon

    NARCIS (Netherlands)

    Nguyen, Duc Minh

    2010-01-01

    In this thesis, the integration of lead zirconate titanate Pb(Zr,Ti)O3 (PZT) thin films into piezoelectric microelectromechanical systems (MEMS) based on silicon is studied. In these structures, all epitaxial oxide layers (thin film/electrode/buffer-layer(s)) were deposited by pulsed laser

  18. Fabrication of magnetic tunnel junctions with epitaxial and textured ferromagnetic layers

    Science.gov (United States)

    Chang, Y. Austin; Yang, Jianhua Joshua

    2008-11-11

    This invention relates to magnetic tunnel junctions and methods for making the magnetic tunnel junctions. The magnetic tunnel junctions include a tunnel barrier oxide layer sandwiched between two ferromagnetic layers both of which are epitaxial or textured with respect to the underlying substrate upon which the magnetic tunnel junctions are grown. The magnetic tunnel junctions provide improved magnetic properties, sharper interfaces and few defects.

  19. Epitaxial graphene electronic structure and transport

    International Nuclear Information System (INIS)

    De Heer, Walt A; Berger, Claire; Wu Xiaosong; Sprinkle, Mike; Hu Yike; Ruan Ming; First, Phillip N; Stroscio, Joseph A; Haddon, Robert; Piot, Benjamin; Faugeras, Clement; Potemski, Marek; Moon, Jeong-Sun

    2010-01-01

    Since its inception in 2001, the science and technology of epitaxial graphene on hexagonal silicon carbide has matured into a major international effort and is poised to become the first carbon electronics platform. A historical perspective is presented and the unique electronic properties of single and multilayered epitaxial graphenes on electronics grade silicon carbide are reviewed. Early results on transport and the field effect in Si-face grown graphene monolayers provided proof-of-principle demonstrations. Besides monolayer epitaxial graphene, attention is given to C-face grown multilayer graphene, which consists of electronically decoupled graphene sheets. Production, structure and electronic structure are reviewed. The electronic properties, interrogated using a wide variety of surface, electrical and optical probes, are discussed. An overview is given of recent developments of several device prototypes including resistance standards based on epitaxial graphene quantum Hall devices and new ultrahigh frequency analogue epitaxial graphene amplifiers.

  20. Process modeling of a reversible solid oxide cell (r-SOC) energy storage system utilizing commercially available SOC reactor

    International Nuclear Information System (INIS)

    Mottaghizadeh, Pegah; Santhanam, Srikanth; Heddrich, Marc P.; Friedrich, K. Andreas; Rinaldi, Fabio

    2017-01-01

    Highlights: • An electric energy storage system was developed based on a commercially available SOC reactor. • Heat generated in SOFC mode of r-SOC is utilized in SOEC operation of r-SOC using latent heat storage. • A round trip efficiency of 54.3% was reached for the reference system at atmospheric pressure. • An improved process system design achieved a round-trip efficiency of 60.4% at 25 bar. - Abstract: The increase of intermittent renewable energy contribution in power grids has urged us to seek means for temporal decoupling of electricity production and consumption. A reversible solid oxide cell (r-SOC) enables storage of surplus electricity through electrochemical reactions when it is in electrolysis mode. The reserved energy in form of chemical compounds is then converted to electricity when the cell operates as a fuel cell. A process system model was implemented using Aspen Plus® V8.8 based on a commercially available r-SOC reactor experimentally characterized at DLR. In this study a complete self-sustaining system configuration is designed by optimal thermal integration and balance of plant. Under reference conditions a round trip efficiency of 54.3% was achieved. Generated heat in fuel cell mode is exploited by latent heat storage tanks to enable endothermic operation of reactor in its electrolysis mode. In total, out of 100 units of thermal energy stored in heat storage tanks during fuel cell mode, 90% was utilized to offset heat demand of system in its electrolysis mode. Parametric analysis revealed the significance of heat storage tanks in thermal management even when reactor entered its exothermic mode of electrolysis. An improved process system design demonstrates a system round-trip efficiency of 60.4% at 25 bar.

  1. Vertical epitaxial wire-on-wire growth of Ge/Si on Si(100) substrate.

    Science.gov (United States)

    Shimizu, Tomohiro; Zhang, Zhang; Shingubara, Shoso; Senz, Stephan; Gösele, Ulrich

    2009-04-01

    Vertically aligned epitaxial Ge/Si heterostructure nanowire arrays on Si(100) substrates were prepared by a two-step chemical vapor deposition method in anodic aluminum oxide templates. n-Butylgermane vapor was employed as new safer precursor for Ge nanowire growth instead of germane. First a Si nanowire was grown by the vapor liquid solid growth mechanism using Au as catalyst and silane. The second step was the growth of Ge nanowires on top of the Si nanowires. The method presented will allow preparing epitaxially grown vertical heterostructure nanowires consisting of multiple materials on an arbitrary substrate avoiding undesired lateral growth.

  2. Epitaxy, thin films and superlattices

    International Nuclear Information System (INIS)

    Jagd Christensen, Morten

    1997-05-01

    This report is the result of structural investigations of 3d transition metal superlattices consisting of Fe/V, Cr/Mn, V/Mn and Fe/Mn, and a structural and magnetic study of a series of Ho/Pr alloys. The work includes preparation and characterization of substrates as well as growth of thin films and Fe/V superlattices by molecular beam epitaxy, including in-situ characterization by reflection high energy electron diffraction and Auger electron spectroscopy. Structural characterization has been done by x-ray diffraction and neutron diffraction. The x-ray diffraction experiments have been performed on the rotating copper anode at Risoe, and at synchrotron facilities in Hamburg and Brookhaven, and the neutron scattering was done at the Danish research reactor DR3 at Risoe. In addition to longitudinal scans, giving information about the structural parameters in the modulation direction, non-specular scans were also performed. This type of scans gives information about in-plane orientation and lattice parameters. From the analysis, structural information is obtained about lattice parameters, epitaxial strain, coherence lengths and crystallographic orientation for the superlattice systems, except Fe/Mn superlattices, which could not be modelled. For the Ho/Pr alloys, x-ray magnetic scattering was performed, and the crystal and magnetic structure was investigated. (au)

  3. Epitaxy, thin films and superlattices

    Energy Technology Data Exchange (ETDEWEB)

    Jagd Christensen, Morten

    1997-05-01

    This report is the result of structural investigations of 3d transition metal superlattices consisting of Fe/V, Cr/Mn, V/Mn and Fe/Mn, and a structural and magnetic study of a series of Ho/Pr alloys. The work includes preparation and characterization of substrates as well as growth of thin films and Fe/V superlattices by molecular beam epitaxy, including in-situ characterization by reflection high energy electron diffraction and Auger electron spectroscopy. Structural characterization has been done by x-ray diffraction and neutron diffraction. The x-ray diffraction experiments have been performed on the rotating copper anode at Risoe, and at synchrotron facilities in Hamburg and Brookhaven, and the neutron scattering was done at the Danish research reactor DR3 at Risoe. In addition to longitudinal scans, giving information about the structural parameters in the modulation direction, non-specular scans were also performed. This type of scans gives information about in-plane orientation and lattice parameters. From the analysis, structural information is obtained about lattice parameters, epitaxial strain, coherence lengths and crystallographic orientation for the superlattice systems, except Fe/Mn superlattices, which could not be modelled. For the Ho/Pr alloys, x-ray magnetic scattering was performed, and the crystal and magnetic structure was investigated. (au) 14 tabs.; 58 ills., 96 refs.

  4. Control growth of silicon nanocolumns' epitaxy on silicon nanowires

    Energy Technology Data Exchange (ETDEWEB)

    Chong, Su Kong, E-mail: sukong1985@yahoo.com.my [University of Malaya, Low Dimensional Materials Research Centre, Department of Physics (Malaysia); Dee, Chang Fu [Universiti Kebangsaan Malaysia (UKM), Institute of Microengineering and Nanoelectronics (IMEN) (Malaysia); Yahya, Noorhana [Universiti Teknologi PETRONAS, Faculty of Science and Information Technology (Malaysia); Rahman, Saadah Abdul [University of Malaya, Low Dimensional Materials Research Centre, Department of Physics (Malaysia)

    2013-04-15

    The epitaxial growth of Si nanocolumns on Si nanowires was studied using hot-wire chemical vapor deposition. A single-crystalline and surface oxide-free Si nanowire core (core radius {approx}21 {+-} 5 nm) induced by indium crystal seed was used as a substance for the vapor phase epitaxial growth. The growth process is initiated by sidewall facets, which then nucleate upon certain thickness to form Si islands and further grow to form nanocolumns. The Si nanocolumns with diameter of 10-20 nm and aspect ratio up to 10 can be epitaxially grown on the surface of nanowires. The results showed that the radial growth rate of the Si nanocolumns remains constant with the increase of deposition time. Meanwhile, the radial growth rates are controllable by manipulating the hydrogen to silane gas flow rate ratio. The optical antireflection properties of the Si nanocolumns' decorated SiNW arrays are discussed in the text.

  5. Reduced-droop green III-nitride light-emitting diodes utilizing GaN tunnel junction

    Science.gov (United States)

    Alhassan, Abdullah I.; Young, Erin C.; Alyamani, Ahmed Y.; Albadri, Abdulrahman; Nakamura, Shuji; DenBaars, Steven P.; Speck, James S.

    2018-04-01

    We report the fabrication of low-droop high-efficiency green c-plane light-emitting diodes (LEDs) utilizing GaN tunnel junction (TJ) contacts. The LED epitaxial layers with a top p-GaN layer were grown by metal organic chemical vapor deposition and an n++-GaN layer was deposited by molecular beam epitaxy to form a TJ. The TJ LEDs were then compared with equivalent LEDs having a tin-doped indium oxide (ITO) contact. The TJ LEDs exhibited a higher performance and a lower efficiency droop than did the ITO LEDs. At 35 A/cm2, the external quantum efficiencies for the TJ and ITO LEDs were 31.2 and 27%, respectively.

  6. Process for forming epitaxial perovskite thin film layers using halide precursors

    Science.gov (United States)

    Clem, Paul G.; Rodriguez, Mark A.; Voigt, James A.; Ashley, Carol S.

    2001-01-01

    A process for forming an epitaxial perovskite-phase thin film on a substrate. This thin film can act as a buffer layer between a Ni substrate and a YBa.sub.2 Cu.sub.3 O.sub.7-x superconductor layer. The process utilizes alkali or alkaline metal acetates dissolved in halogenated organic acid along with titanium isopropoxide to dip or spin-coat the substrate which is then heated to about 700.degree. C. in an inert gas atmosphere to form the epitaxial film on the substrate. The YBCO superconductor can then be deposited on the layer formed by this invention.

  7. Magnetic anisotropies in epitaxial Fe3O4/GaAs(100) patterned structures

    International Nuclear Information System (INIS)

    Zhang, W.; Zhang, D.; Yuan, S. J.; Huang, Z. C.; Zhai, Y.; Wong, P. K. J.; Wu, J.; Xu, Y. B.

    2014-01-01

    Previous studies on epitaxial Fe 3 O 4 rings in the context of spin-transfer torque effect have revealed complicated and undesirable domain structures, attributed to the intrinsic fourfold magnetocrystalline anisotropy in the ferrite. In this Letter, we report a viable solution to this problem, utilizing a 6-nm-thick epitaxial Fe 3 O 4 thin film on GaAs(100), where the fourfold magnetocrystalline anisotropy is negligible. We demonstrate that in the Fe 3 O 4 planar wires patterned from our thin film, such a unique magnetic anisotropy system has been preserved, and relatively simple magnetic domain configurations compared to those previous reports can be obtained

  8. Growth of Gold-assisted Gallium Arsenide Nanowires on Silicon Substrates via Molecular Beam Epitaxy

    Directory of Open Access Journals (Sweden)

    Ramon M. delos Santos

    2008-06-01

    Full Text Available Gallium arsenide nanowires were grown on silicon (100 substrates by what is called the vapor-liquid-solid (VLS growth mechanism using a molecular beam epitaxy (MBE system. Good quality nanowires with surface density of approximately 108 nanowires per square centimeter were produced by utilizing gold nanoparticles, with density of 1011 nanoparticles per square centimeter, as catalysts for nanowire growth. X-ray diffraction measurements, scanning electron microscopy, transmission electron microscopy and Raman spectroscopy revealed that the nanowires are epitaxially grown on the silicon substrates, are oriented along the [111] direction and have cubic zincblende structure.

  9. Pumping requirements and options for molecular beam epitaxy and gas source molecular beam epitaxy/chemical beam epitaxy

    International Nuclear Information System (INIS)

    McCollum, M.J.; Plano, M.A.; Haase, M.A.; Robbins, V.M.; Jackson, S.L.; Cheng, K.Y.; Stillman, G.E.

    1989-01-01

    This paper discusses the use of gas sources in growth by MBE as a result of current interest in growth of InP/InGaAsP/InGaAs lattice matched to InP. For gas flows greater than a few sccm, pumping speed requirements dictate the use of turbomolecular or diffusion pumps. GaAs samples with high p-type mobilities have been grown with diffusion pumped molecular beam epitaxial system. According to the authors, this demonstration of the inherent cleanliness of a properly designed diffusion pumping system indicates that a diffusion pump is an excellent inexpensive and reliable choice for growth by molecular beam epitaxy and gas source molecular beam epitaxy/chemical beam epitaxy

  10. Quantum Nanostructures by Droplet Epitaxy

    Directory of Open Access Journals (Sweden)

    Somsak Panyakeow

    2009-02-01

    Full Text Available Droplet epitaxy is an alternative growth technique for several quantum nanostructures. Indium droplets are distributed randomly on GaAs substrates at low temperatures (120-350'C. Under background pressure of group V elements, Arsenic and Phosphorous, InAs and InP nanostructures are created. Quantum rings with isotropic shape are obtained at low temperature range. When the growth thickness is increased, quantum rings are transformed to quantum dot rings. At high temperature range, anisotropic strain gives rise to quantum rings with square holes and non-uniform ring stripe. Regrowth of quantum dots on these anisotropic quantum rings, Quadra-Quantum Dots (QQDs could be realized. Potential applications of these quantum nanostructures are also discussed.

  11. Molecular beam epitaxy a short history

    CERN Document Server

    Orton, J W

    2015-01-01

    This volume describes the development of molecular beam epitaxy from its origins in the 1960s through to the present day. It begins with a short historical account of other methods of crystal growth, both bulk and epitaxial, to set the subject in context, emphasising the wide range of semiconductor materials employed. This is followed by an introduction to molecular beams and their use in the Stern-Gerlach experiment and the development of the microwave MASER.

  12. Spin Filtering in Epitaxial Spinel Films with Nanoscale Phase Separation

    KAUST Repository

    Li, Peng

    2017-05-08

    The coexistence of ferromagnetic metallic phase and antiferromagnetic insulating phase in nanoscaled inhomogeneous perovskite oxides accounts for the colossal magnetoresistance. Although the model of spin-polarized electron transport across antiphase boundaries has been commonly employed to account for large magnetoresistance (MR) in ferrites, the magnetic anomalies, the two magnetic phases and enhanced molecular moment, are still unresolved. We observed a sizable MR in epitaxial spinel films (NiCo2O4-δ) that is much larger than that commonly observed in spinel ferrites. Detailed analysis reveals that this MR can be attributed to phase separation, in which the perfect ferrimagnetic metallic phase and ferrimagnetic insulating phase coexist. The magnetic insulating phase plays an important role in spin filtering in these phase separated spinel oxides, leading to a sizable MR effect. A spin filtering model based on Zeeman effect and direct tunneling is developed to account for MR of the phase separated films.

  13. Photoenhanced atomic layer epitaxy. Hikari reiki genshiso epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Mashita, M.; Kawakyu, Y. (Toshiba corp., Tokyo (Japan))

    1991-10-01

    The growth temperature range was greatly expanded of atomic layer epitaxy (ALE) expected as the growth process of ultra-thin stacks. Ga layers and As layers were formed one after the other on a GaAs substrate in the atmosphere of trimethylgallium (TMG) or AsH{sub 2} supplied alternately, by KrF excimer laser irradiation normal to the substrate. As a result, the growth temperature range was 460-540{degree}C nearly 10 times that of 500 {plus minus} several degrees centigrade in conventional thermal growth method. Based on the experimental result where light absorption of source molecules adsorbed on a substrate surface was larger than that under gaseous phase condition, new adsorbed layer enhancement model was proposed to explain above irradiation effect verifying it by experiments. As this photoenhancement technique is applied to other materials, possible fabrication of new crystal structures as a super lattice with ultra-thin stacks of single atomic layers is expected because of a larger freedom in material combination for hetero-ALE. 11 refs., 7 figs.

  14. Epitaxial YBa2Cu3O7 films on rolled-textured metals for high temperature superconducting applications

    International Nuclear Information System (INIS)

    Norton, D.P.; Park, C.; Prouteau, C.

    1998-04-01

    The epitaxial growth of high temperature superconducting (HTS) films on rolled-textured metal represents a viable approach for long-length superconducting tapes. Epitaxial, 0.5 microm thick YBa 2 Cu 3 O 7 (YBCO) films with critical current densities, J c , greater than 1 MA/cm 2 have been realized on rolled-textured (001) Ni tapes with yttria-stabilized zirconia (YSZ)/CeO 2 oxide buffer layers. This paper describes the synthesis using pulsed-laser deposition (PLD) of epitaxial oxide buffer layers on biaxially-textured metal that comprise the so-called rolling-assisted biaxially-textured substrates (RABiTs trademark). The properties of the buffer and YBa 2 Cu 3 O 7 films on rolled-textured Ni are discussed, with emphasis given to the crystallographic and microstructural properties that determine the superconducting properties of these multilayer structures

  15. Dichloroacetate effects on glucose and lactate oxidation by neurons and astroglia in vitro and on glucose utilization by brain in vivo.

    Science.gov (United States)

    Itoh, Yoshiaki; Esaki, Takanori; Shimoji, Kazuaki; Cook, Michelle; Law, Mona J; Kaufman, Elaine; Sokoloff, Louis

    2003-04-15

    Neuronal cultures in vitro readily oxidized both D-[(14)C]glucose and l-[(14)C]lactate to (14)CO(2), whereas astroglial cultures oxidized both substrates sparingly and metabolized glucose predominantly to lactate and released it into the medium. [(14)C]Glucose oxidation to (14)CO(2) varied inversely with unlabeled lactate concentration in the medium, particularly in neurons, and increased progressively with decreasing lactate concentration. Adding unlabeled glucose to the medium inhibited [(14)C]lactate oxidation to (14)CO(2) only in astroglia but not in neurons, indicating a kinetic preference in neurons for oxidation of extracellular lactate over intracellular pyruvatelactate produced by glycolysis. Protein kinase-catalyzed phosphorylation inactivates pyruvate dehydrogenase (PDH), which regulates pyruvate entry into the tricarboxylic acid cycle. Dichloroacetate inhibits this kinase, thus enhancing PDH activity. In vitro dichloroacetate stimulated glucose and lactate oxidation to CO(2) and reduced lactate release mainly in astroglia, indicating that limitations in glucose and lactate oxidation by astroglia may be due to a greater balance of PDH toward the inactive form. To assess the significance of astroglial export of lactate to neurons in vivo, we attempted to diminish this traffic in rats by administering dichloroacetate (50 mgkg) intravenously to stimulate astroglial lactate oxidation and then examined the effects on baseline and functionally activated local cerebral glucose utilization (lCMR(glc)). Dichloroacetate raised baseline lCMR(glc) throughout the brain and decreased the percent increases in lCMR(glc) evoked by functional activation. These studies provide evidence in support of the compartmentalization of glucose metabolism between astroglia and neurons but indicate that the compartmentalization may be neither complete nor entirely obligatory.

  16. Analysis of neutronics benchmarks for the utilization of mixed oxide fuel in light water reactor using DRAGON code

    International Nuclear Information System (INIS)

    Nithyadevi, Rajan; Thilagam, L.; Karthikeyan, R.; Pal, Usha

    2016-01-01

    Highlights: • Use of advanced computational code – DRAGON-5 using advanced self shielding model USS. • Testing the capability of DRAGON-5 code for the analysis of light water reactor system. • Wide variety of fuels LEU, MOX and spent fuel have been analyzed. • Parameters such as k ∞ , one, few and multi-group macroscopic cross-sections and fluxes were calculated. • Suitability of deterministic methodology employed in DRAGON-5 code is demonstrated for LWR. - Abstract: Advances in reactor physics have led to the development of new computational technologies and upgraded cross-section libraries so as to produce an accurate approximation to the true solution for the problem. Thus it is necessary to revisit the benchmark problems with the advanced computational code system and upgraded cross-section libraries to see how far they are in agreement with the earlier reported values. Present study is one such analysis with the DRAGON code employing advanced self shielding models like USS and 172 energy group ‘JEFF3.1’ cross-section library in DRAGLIB format. Although DRAGON code has already demonstrated its capability for heavy water moderator systems, it is now tested for light water reactor (LWR) and fast reactor systems. As a part of validation of DRAGON for LWR, a VVER computational benchmark titled “Neutronics Benchmarks for the Utilization of Mixed-Oxide Fuel-Volume 3” submitted by the Russian Federation has been taken up. Presently, pincell and assembly calculations are carried out considering variation in fuel temperature (both fresh and spent), moderator temperatures and boron content in the moderator. Various parameters such as infinite neutron multiplication (k ∞ ) factor, one group integrated flux, few group homogenized cross-sections (absorption, nu-fission) and reaction rates (absorption, nu-fission) of individual isotopic nuclides are calculated for different reactor states. Comparisons of results are made with the reported Monte Carlo

  17. Deposition of O atomic layers on Si(100) substrates for epitaxial Si-O superlattices: investigation of the surface chemistry

    Energy Technology Data Exchange (ETDEWEB)

    Jayachandran, Suseendran, E-mail: suseendran.jayachandran@imec.be [KU Leuven, Department of Metallurgy and Materials, Castle Arenberg 44, B-3001 Leuven (Belgium); IMEC, Kapeldreef 75, 3001 Leuven (Belgium); Delabie, Annelies; Billen, Arne [KU Leuven, Department of Chemistry, Celestijnenlaan 200F, B-3001 Leuven (Belgium); IMEC, Kapeldreef 75, 3001 Leuven (Belgium); Dekkers, Harold; Douhard, Bastien; Conard, Thierry; Meersschaut, Johan; Caymax, Matty [IMEC, Kapeldreef 75, 3001 Leuven (Belgium); Vandervorst, Wilfried [KU Leuven, Department of Physics and Astronomy, Celestijnenlaan 200D, B-3001 Leuven (Belgium); IMEC, Kapeldreef 75, 3001 Leuven (Belgium); Heyns, Marc [KU Leuven, Department of Metallurgy and Materials, Castle Arenberg 44, B-3001 Leuven (Belgium); IMEC, Kapeldreef 75, 3001 Leuven (Belgium)

    2015-01-01

    Highlights: • Atomic layer is deposited by O{sub 3} chemisorption reaction on H-terminated Si(100). • O-content has critical impact on the epitaxial thickness of the above-deposited Si. • Oxygen atoms at dimer/back bond configurations enable epitaxial Si on O atomic layer. • Oxygen atoms at hydroxyl and more back bonds, disable epitaxial Si on O atomic layer. - Abstract: Epitaxial Si-O superlattices consist of alternating periods of crystalline Si layers and atomic layers of oxygen (O) with interesting electronic and optical properties. To understand the fundamentals of Si epitaxy on O atomic layers, we investigate the O surface species that can allow epitaxial Si chemical vapor deposition using silane. The surface reaction of ozone on H-terminated Si(100) is used for the O deposition. The oxygen content is controlled precisely at and near the atomic layer level and has a critical impact on the subsequent Si deposition. There exists only a small window of O-contents, i.e. 0.7–0.9 atomic layers, for which the epitaxial deposition of Si can be realized. At these low O-contents, the O atoms are incorporated in the Si-Si dimers or back bonds (-OSiH), with the surface Si atoms mainly in the 1+ oxidation state, as indicated by infrared spectroscopy. This surface enables epitaxial seeding of Si. For O-contents higher than one atomic layer, the additional O atoms are incorporated in the Si-Si back bonds as well as in the Si-H bonds, where hydroxyl groups (-Si-OH) are created. In this case, the Si deposition thereon becomes completely amorphous.

  18. Epitaxial growth of rhenium with sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Oh, Seongshik [National Institute of Standards and Technology, Boulder, CO 80305 (United States) and Department of Physics, University of Illinois, Urbana, IL 61801 (United States)]. E-mail: soh@boulder.nist.gov; Hite, Dustin A. [National Institute of Standards and Technology, Boulder, CO 80305 (United States); Cicak, K. [National Institute of Standards and Technology, Boulder, CO 80305 (United States); Osborn, Kevin D. [National Institute of Standards and Technology, Boulder, CO 80305 (United States); Simmonds, Raymond W. [National Institute of Standards and Technology, Boulder, CO 80305 (United States); McDermott, Robert [University of California, Santa Barbara, CA 93106 (United States); Cooper, Ken B. [University of California, Santa Barbara, CA 93106 (United States); Steffen, Matthias [University of California, Santa Barbara, CA 93106 (United States); Martinis, John M. [University of California, Santa Barbara, CA 93106 (United States); Pappas, David P. [National Institute of Standards and Technology, Boulder, CO 80305 (United States)

    2006-02-21

    We have grown epitaxial Rhenium (Re) (0001) films on {alpha}-Al{sub 2}O{sub 3} (0001) substrates using sputter deposition in an ultra high vacuum system. We find that better epitaxy is achieved with DC rather than with RF sputtering. With DC sputtering, epitaxy is obtained with the substrate temperatures above 700 deg. C and deposition rates below 0.1 nm/s. The epitaxial Re films are typically composed of terraced hexagonal islands with screw dislocations, and island size gets larger with high temperature post-deposition annealing. The growth starts in a three dimensional mode but transforms into two dimensional mode as the film gets thicker. With a thin ({approx}2 nm) seed layer deposited at room temperature and annealed at a high temperature, the initial three dimensional growth can be suppressed. This results in larger islands when a thick film is grown at 850 deg. C on the seed layer. We also find that when a room temperature deposited Re film is annealed to higher temperatures, epitaxial features start to show up above {approx}600 deg. C, but the film tends to be disordered.

  19. In Situ Observation of Oxygen Vacancy Dynamics and Ordering in the Epitaxial LaCoO3 System.

    Science.gov (United States)

    Jang, Jae Hyuck; Kim, Young-Min; He, Qian; Mishra, Rohan; Qiao, Liang; Biegalski, Michael D; Lupini, Andrew R; Pantelides, Sokrates T; Pennycook, Stephen J; Kalinin, Sergei V; Borisevich, Albina Y

    2017-07-25

    Vacancy dynamics and ordering underpin the electrochemical functionality of complex oxides and strongly couple to their physical properties. In the field of the epitaxial thin films, where connection between chemistry and film properties can be most clearly revealed, the effects related to oxygen vacancies are attracting increasing attention. In this article, we report a direct, real-time, atomic level observation of the formation of oxygen vacancies in the epitaxial LaCoO 3 thin films and heterostructures under the influence of the electron beam utilizing scanning transmission electron microscopy (STEM). In the case of LaCoO 3 /SrTiO 3 superlattice, the formation of the oxygen vacancies is shown to produce quantifiable changes in the interatomic distances, as well as qualitative changes in the symmetry of the Co sites manifested as off-center displacements. The onset of these changes was observed in both the [100] pc and [110] pc orientations in real time. Additionally, annular bright field images directly show the formation of oxygen vacancy channels along [110]pc direction. In the case of 15 u.c. LaCoO 3 thin film, we observe the sequence of events during beam-induced formation of oxygen vacancy ordered phases and find them consistent with similar processes in the bulk. Moreover, we record the dynamics of the nucleation, growth, and defect interaction at the atomic scale as these transformations happen. These results demonstrate that we can track dynamic oxygen vacancy behavior with STEM, generating atomic-level quantitative information on phase transformation and oxygen diffusion.

  20. Experimental findings on actinide recovery utilizing oxidation by peroxydisulfate followed by ion exchange: Fuel cycle research & development

    Energy Technology Data Exchange (ETDEWEB)

    Hobbs, D. T. [Savannah River Site (SRS), Aiken, SC (United States). Savannah River National Lab. (SRNL); Shehee, T. C. [Savannah River Site (SRS), Aiken, SC (United States). Savannah River National Lab. (SRNL)

    2015-08-31

    Our research seeks to determine if inorganic ion-exchange materials can be exploited to provide effective minor actinide (Am, Cm) separation from lanthanides. Previous work has established that a number of inorganic and UMOF ion-exchange materials exhibit varying affinities for actinides and lanthanides, which may be exploited for effective separations. During FY15, experimental work focused on investigating methods to oxidize americium in dilute nitric and perchloric acid with subsequent ion-exchange performance measurements of ion exchangers with the oxidized americium in dilute nitric acid. Ion-exchange materials tested included a variety of alkali titanates. Americium oxidation testing sought to determine the influence that other redox active components may have on the oxidation of AmIII. Experimental findings indicated that CeIII, NpV, and RuII are oxidized by peroxydisulfate, but there are no indications that the presence of CeIII, NpV, and RuII affected the rate or extent of americium oxidation at the concentrations of peroxydisulfate being used.

  1. Field-induced resistance switching at metal/perovskite manganese oxide interface

    International Nuclear Information System (INIS)

    Ohkubo, I.; Tsubouchi, K.; Harada, T.; Kumigashira, H.; Itaka, K.; Matsumoto, Y.; Ohnishi, T.; Lippmaa, M.; Koinuma, H.; Oshima, M.

    2008-01-01

    Planar type metal/insulator/metal structures composed of an epitaxial perovskite manganese oxide layer and various metal electrodes were prepared for electric-field-induced resistance switching. Only the electrode pairs including Al show good resistance switching and the switching ratio reaches its maximum of 1000. This resistance switching occurs around the interface between Al electrodes and epitaxial perovskite manganese oxide thin films

  2. Position-controlled epitaxial III-V nanowires on silicon

    NARCIS (Netherlands)

    Roest, A.L.; Verheijen, M.A.; Wunnicke, O.; Serafin, S.N.; Wondergem, H.J.; Bakkers, E.P.A.M.

    2006-01-01

    We show the epitaxial integration of III-V semiconductor nanowires with silicon technology. The wires are grown by the VLS mechanism with laser ablation as well as metal-organic vapour phase epitaxy. The hetero-epitaxial growth of the III-V nanowires on silicon was confirmed with x-ray diffraction

  3. Catalytic oxidative desulfurization of diesel utilizing hydrogen peroxide and functionalized-activated carbon in a biphasic diesel-acetonitrile system

    Energy Technology Data Exchange (ETDEWEB)

    Haw, Kok-Giap; Bakar, Wan Azelee Wan Abu; Ali, Rusmidah; Chong, Jiunn-Fat [Department of Chemistry, Faculty of Science, Universiti Teknologi Malaysia, 81310 UTM Skudai, Johor (Malaysia); Kadir, Abdul Aziz Abdul [Department of Petroleum Engineering, Faculty of Chemical and Natural Resources Engineering, Universiti Teknologi Malaysia, 81310 UTM Skudai, Johor (Malaysia)

    2010-09-15

    This paper presents the development of granular functionalized-activated carbon as catalysts in the catalytic oxidative desulfurization (Cat-ODS) of commercial Malaysian diesel using hydrogen peroxide as oxidant. Granular functionalized-activated carbon was prepared from oil palm shell using phosphoric acid activation method and carbonized at 500 C and 700 C for 1 h. The activated carbons were characterized using various analytical techniques to study the chemistry underlying the preparation and calcination treatment. Nitrogen adsorption/desorption isotherms exhibited the characteristic of microporous structure with some contribution of mesopore property. The Fourier Transform Infrared Spectroscopy results showed that higher activation temperature leads to fewer surface functional groups due to thermal decomposition. Micrograph from Field Emission Scanning Electron Microscope showed that activation at 700 C creates orderly and well developed pores. Furthermore, X-ray Diffraction patterns revealed that pyrolysis has converted crystalline cellulose structure of oil palm shell to amorphous carbon structure. The influence of the reaction temperature, the oxidation duration, the solvent, and the oxidant/sulfur molar ratio were examined. The rates of the catalytic oxidative desulfurization reaction were found to increase with the temperature, and H{sub 2}O{sub 2}/S molar ratio. Under the best operating condition for the catalytic oxidative desulfurization: temperature 50 C, atmospheric pressure, 0.5 g activated carbon, 3 mol ratio of hydrogen peroxide to sulfur, 2 mol ratio of acetic acid to sulfur, 3 oxidation cycles with 1 h for each cycle using acetonitrile as extraction solvent, the sulfur content in diesel was reduced from 2189 ppm to 190 ppm with 91.3% of total sulfur removed. (author)

  4. Dewetting of Epitaxial Silver Film on Silicon by Thermal Annealing

    Science.gov (United States)

    Sanders, Charlotte E.; Kellogg, Gary L.; Shih, C.-K.

    2013-03-01

    It has been shown that noble metals can grow epitaxially on semiconducting and insulating substrates, despite being a non-wetting system: low temperature deposition followed by room temperature annealing leads to atomically flat film morphology. However, the resulting metastable films are vulnerable to dewetting, which has limited their utility for applications under ambient conditions. The physics of this dewetting is of great interest but little explored. We report on an investigation of the dewetting of epitaxial Ag(111) films on Si(111) and (100). Low energy electron microscopy (LEEM) shows intriguing evolution in film morphology and crystallinity, even at temperatures below 100oC. On the basis of these findings, we can begin to draw compelling inferences about film-substrate interaction and the kinetics of dewetting. Financial support is from NSF, DGE-0549417 and DMR-0906025. This work was performed, in part, at the Center for Integrated Nanotechnologies, User Facility operated for the U.S. DOE Office of Science. Sandia National Lab is managed and operated by Sandia Corp., a subsidiary of Lockheed Martin Corp., for the U.S. DOE's National Nuclear Security Administration under DE-AC04-94AL85000.

  5. Growth of conductive HfO{sub 2-x} thin films by reactive molecular beam epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Hildebrandt, Erwin; Kurian, Jose; Alff, Lambert [Institut fuer Materialwissenschaft, TU Darmstadt (Germany); Kleebe, Hans-Joachim [Institut fuer Angewandte Geowissenschaften, TU Darmstadt (Germany)

    2009-07-01

    Thin films of oxygen deficient hafnium oxide were grown on single crystal c-cut and r-cut sapphire substrates by reactive molecular beam epitaxy. The oxidation conditions during growth were varied within a wide range using RF-activated oxygen. Hafnium oxide thin films were characterized using X-ray diffraction, resistivity measurements ({rho}-T) and transmission electron microscopy (TEM). The results show a dramatic increase in conductivity of the deposited oxygen deficient hafnium oxide thin films with decreasing oxidation conditions during growth. The electrical properties of deficient hafnium oxide thin films varied from insulating over semiconducting to conducting. X-ray diffraction data as well as TEM data rule out the possibility of conductivity due to metallic hafnium.

  6. Interface formation and defect structures in epitaxial La2Zr2O7 thin films on (111) Si

    International Nuclear Information System (INIS)

    Seo, J.W.; Fompeyrine, J.; Guiller, A.; Norga, G.; Marchiori, C.; Siegwart, H.; Locquet, J.-P.

    2003-01-01

    We have studied the growth of epitaxial La 2 Zr 2 O 7 thin films on (111) Si. Although the interface structure can be strongly affected by the Si oxidation during the deposition process, epitaxial growth of La 2 Zr 2 O 7 was obtained. A detailed study by means of transmission electron microscopy reveals two types of structures (pyrochlore and fluorite) with the same average chemical composition but strong differences in reactivity and interface formation. The structural complexity of the ordered pyrochlore structure seems to prevent excess oxygen diffusion and interfacial SiO 2 formation

  7. Epitaxial growth of cubic Gd{sub 2}O{sub 3} thin films on Ge substrates

    Energy Technology Data Exchange (ETDEWEB)

    Molle, A; Wiemer, C; Bhuiyan, M D N K; Tallarida, G; Fanciulli, M [CNR-INFM, Laboratorio Nazionale MDM, via C. Olivetti 2, I-20041 Agrate Brianza (Italy)], E-mail: alessandro.molle@mdm.infm.it

    2008-03-15

    Gd{sub 2}O{sub 3} thin films were grown on Ge (001) substrates by molecular beam epitaxy. The epitaxial character of the film is demonstrated by electron diffraction during the growth. The structural characterization of the films shows that the Gd{sub 2}O{sub 3} forms a bixbyite polymorph with a (110) out-of-plane orientation. The formation of bixbyite structured Gd{sub 2}O{sub 3} is discussed in terms of the atomic arrangement of the oxide planes on the Ge(001) surface.

  8. Combinatorial screening of halide perovskite thin films and solar cells by mask-defined IR laser molecular beam epitaxy

    OpenAIRE

    Kawashima, Kazuhiro; Okamoto, Yuji; Annayev, Orazmuhammet; Toyokura, Nobuo; Takahashi, Ryota; Lippmaa, Mikk; Itaka, Kenji; Suzuki, Yoshikazu; Matsuki, Nobuyuki; Koinuma, Hideomi

    2017-01-01

    Abstract As an extension of combinatorial molecular layer epitaxy via ablation of perovskite oxides by a pulsed excimer laser, we have developed a laser molecular beam epitaxy (MBE) system for parallel integration of nano-scaled thin films of organic?inorganic hybrid materials. A pulsed infrared (IR) semiconductor laser was adopted for thermal evaporation of organic halide (A-site: CH3NH3I) and inorganic halide (B-site: PbI2) powder targets to deposit repeated A/B bilayer films where the thic...

  9. Growth of HfO{sub x} thin films by reactive molecular beam epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Hildebrandt, Erwin; Kurian, Jose; Alff, Lambert [Institut fuer Materialwissenschaft, TU Darmstadt (Germany)

    2008-07-01

    Thin films of hafnium oxide were grown on single crystal r-cut and c-cut sapphire by reactive molecular beam epitaxy. The conditions for the growth of single oriented hafnium oxide thin films have been established. Hafnium oxide thin films were characterized by X-ray diffraction and optical absorption measurements. It was found that hafnium oxide thin films grown on r-cut sapphire were (00l) oriented whereas, on c-cut sapphire, hafnium oxide films showed different orientations depending on the growth temperature and oxidation conditions. The hafnium oxide films grown at higher temperature and under strong oxidation conditions yielded (001) oriented films on c-cut sapphire whereas slightly weaker oxidation condition leads to (111) oriented hafnium oxide films. The bandgap deducted from optical absorption measurement carried out on hafnium oxide films grown under optimized conditions agreed well with the values reported in literature. A range of oxygen deficient thin films of hafnium oxide were also grown on single crystal sapphire substrates in order to investigate the effect of oxygen vacancies on dielectric properties of hafnium oxide. The oxygen deficient thin films of hafnium oxide show a decrease in bandgap with increase in oxygen deficiency.

  10. Resistivity of epitaxial copper nanolines with trapezoidal cross-section

    International Nuclear Information System (INIS)

    Lu, Zonghuan; Frey, David M.; Merkh, Thomas; Lord, Robert; Washington, Morris A.; Lu, Toh-Ming

    2016-01-01

    The resistivity of epitaxial Cu nanolines with line width ranging from 20 to 180 nm and line height from 40 to 50 nm was measured using a four-point probe technique. The Cu nanolines were fabricated using ebeam lithography with a polymethyl methacrylate bilayer resist system for improved line edge smoothness. The cross-section profile of the lines was examined using the focused ion beam milling technique. The results indicate that the cross-section should be more accurately described as trapezoidal rather than as rectangular. Using the trapezoidal profile, the electrical resistivity was calculated from the measured resistance data. Modeling based on the Fuchs–Sondheimer (FS) theory using the trapezoidal profile was also carried out. The results were compared with the experimentally calculated resistivity data. For Cu lines with line width less than 30 nm, the measured resistivity was shown to be up to 20% higher than the value predicted by the FS theory. Further examination of Cu lines using atomic force microscopy and scanning electron microscopy was conducted to extract the surface roughness and line edge roughness information. Their contribution to the resistivity increase was estimated to be only up to 3% for the Cu nanolines fabricated, which did not significantly contribute to the overall resistivity for Cu lines with line width less than 30 nm. Other possible factors affecting the resistivity of the Cu nanolines were also discussed, including the oxide formation on the surface of the Cu lines. - Highlights: • Epitaxial copper nanolines were fabricated using ebeam lithography. • The effect of line cross-section profiles on electrical resistivity was studied. • Trapezoidal cross−section gives better resistivity estimation for lines down to 20 nm. • Impact of surface roughness and line edge roughness to resistivity is small. • Oxidization layer has an effect on the resistivity increase.

  11. Computer graphic investigation on the epitaxial growth of superconductor films

    International Nuclear Information System (INIS)

    Miyamoto, A.; Iwamoto, S.; Inui, T.; Agusa, K.

    1989-01-01

    A mechanism of the epitaxial growth the oxide superconductor films has been investigated by using the computer graphics for the combination of orthorhombic Ba 2 YCu 3 O 7-x with substrate crystals such as SrTiO 3 MgO, and ZrO 2 . The (001) plane Ba 2 YCu 3 O 7-x with substrate crystals such as SrTiO 3 , MgO, and ZrO 2 . The (001) plane of Ba 2 YCu 3 O 7-x has been shown to fit the (100) plane of SrTiO 3 , MgO, and ZrO 2 . A crystallographic fit has also been proved between the (110) plane of Ba 2 YCu 3 O 7-x and the (110) plane of SrTiO 3 . These results are consistent with the experimental data about the epitaxial growth of the Ba 2 YCu 3 O 7-x films. Furthermore, detailed investigation of atomic arrangements has indicated some differences in the ionic interaction at the superconductor-substrate interface among SrTiO 3 , MgO, and ZrO 2 substrates. As for ZrO 2 (100) plane, for examples, ionic arrangements at the oxide layer is favorable only for the interaction with Y 3+ layer of Ba 2 YCu 3 O 7-x , while the Zr-O layer of ZrO 2 can interact with both Ba-O layer and Cu-O layer of Ba 2 YCu 3 O 7-x

  12. Epitaxial silicon semiconductor detectors, past developments, future prospects

    International Nuclear Information System (INIS)

    Gruhn, C.R.

    1976-01-01

    A review of the main physical characteristics of epitaxial silicon as it relates to detector development is presented. As examples of applications results are presented on (1) epitaxial silicon avalanche diodes (ESAD); signal-to-noise, non-linear aspects of the avalanche gain mechanism, gain-bandwidth product, (2) ultrathin epitaxial silicon surface barrier (ESSB) detectors, response to heavy ions, (3) an all-epitaxial silicon diode (ESD), response to heavy ions, charge transport and charge defect. Future prospects of epitaxial silicon as it relates to new detector designs are summarized

  13. Fluorometric determination of vanadium (V) by utilizing its catalytic effect on the oxidation of o-aminophenol by chlorate

    Energy Technology Data Exchange (ETDEWEB)

    Hiraki, K; Shimizu, N; Nishikawa, Y [Kinki Univ., Higashi-Osaka, Osaka (Japan). Faculty of Science and Technology; Shigematsu, T

    1981-12-01

    The oxidation of o-aminophenol by chlorate ion takes place in acidic milieu and is catalyzed by a trace amount of vanadium (V). Vanadium (V) oxidizes o-aminophenol to 2-amino-3-phenoxazone, then the vanadium (IV) produced is reoxidized to vanadium (V) by the sodium chlorate. Further oxidation of o-aminophenol proceeds by repetition of these reactions. The oxidation product (2-amino-3-phenoxazone) gives an intense fluorescence; under optimum conditions, the fluorescence intensity is proportional to the concentration of vanadium. The most suitable concentration of o-aminophenol and sodium chlorate for the determination of vanadium (V) were found to be 0.02 M and 2 x 10/sup -4/ M, respectively. From 0.1 ppm to 5 ppm of vanadium (V) can be determined under the optimum conditions; reaction temperature 50/sup 0/C, reaction time 2 h, and at pH 2 +- 0.2. If the reaction time is increased to 3 h at 55/sup 0/C, the method may be extended from 2 ppb to 15 ppb of vanadium. Interferences of diverse ions were tested, among which Fe (III) and Mn (VII) caused positive errors, and Cr (VI), Mo (VI) negative errors if present in 40 fold w/w ratio to V (V).

  14. Artificial epitaxy of indium antimonide

    International Nuclear Information System (INIS)

    Ershov, V.I.; Givargizov, E.I.

    1987-01-01

    The results of the experiments on recrystallization of thin InSb films deposited on oxidized silicon by flash evaporation with ionized beams are given. Artificial microreliefs (topographic and thermal ones) were used for controlling the growth process. An orientation mechanism of the growing film by the microrelief is discussed. The experiments on preparation of regular single-crystal islands are described

  15. Epitaxial Graphene: A New Material for Electronics

    Science.gov (United States)

    de Heer, Walt A.

    2007-10-01

    Graphene multilayers are grown epitaxially on single crystal silicon carbide. This system is composed of several graphene layers of which the first layer is electron doped due to the built-in electric field and the other layers are essentially undoped. Unlike graphite the charge carriers show Dirac particle properties (i.e. an anomalous Berry's phase, weak anti-localization and square root field dependence of the Landau level energies). Epitaxial graphene shows quasi-ballistic transport and long coherence lengths; properties that may persists above cryogenic temperatures. Paradoxically, in contrast to exfoliated graphene, the quantum Hall effect is not observed in high mobility epitaxial graphene. It appears that the effect is suppressed due to absence of localized states in the bulk of the material. Epitaxial graphene can be patterned using standard lithography methods and characterized using a wide array of techniques. These favorable features indicate that interconnected room temperature ballistic devices may be feasible for low dissipation high-speed nano-electronics.

  16. Magnetic x-ray dichroism in ultrathin epitaxial films

    Energy Technology Data Exchange (ETDEWEB)

    Tobin, J.G.; Goodman, K.W. [Lawrence Berkeley National Lab., CA (United States); Cummins, T.R. [Univ. of Missouri, Rolla, MO (United States)] [and others

    1997-04-01

    The authors have used Magnetic X-ray Linear Dichroism (MXLD) and Magnetic X-ray Circular Dichroism (MXCD) to study the magnetic properties of epitaxial overlayers in an elementally specific fashion. Both MXLD and MXCD Photoelectron Spectroscopy were performed in a high resolution mode at the Spectromicroscopy Facility of the ALS. Circular Polarization was obtained via the utilization of a novel phase retarder (soft x-ray quarter wave plate) based upon transmission through a multilayer film. The samples were low temperature Fe overlayers, magnetic alloy films of NiFe and CoNi, and Gd grown on Y. The authors results include a direct comparison of high resolution angle resolved Photoelectron Spectroscopy performed in MXLD and MXCD modes as well as structural studies with photoelectron diffraction.

  17. Magnetic x-ray dichroism in ultrathin epitaxial films

    International Nuclear Information System (INIS)

    Tobin, J.G.; Goodman, K.W.; Cummins, T.R.

    1997-01-01

    The authors have used Magnetic X-ray Linear Dichroism (MXLD) and Magnetic X-ray Circular Dichroism (MXCD) to study the magnetic properties of epitaxial overlayers in an elementally specific fashion. Both MXLD and MXCD Photoelectron Spectroscopy were performed in a high resolution mode at the Spectromicroscopy Facility of the ALS. Circular Polarization was obtained via the utilization of a novel phase retarder (soft x-ray quarter wave plate) based upon transmission through a multilayer film. The samples were low temperature Fe overlayers, magnetic alloy films of NiFe and CoNi, and Gd grown on Y. The authors results include a direct comparison of high resolution angle resolved Photoelectron Spectroscopy performed in MXLD and MXCD modes as well as structural studies with photoelectron diffraction

  18. The fabrication of high sensitivity gold nanorod H2S gas sensors utilizing the highly uniform anodic aluminum oxide template

    Directory of Open Access Journals (Sweden)

    Chien-Yu Li

    2016-12-01

    Full Text Available Gold nanorod were fabricated using anodic alumina oxide template for H2S gas detection. The nanorod gas sensor exhibits high surface density and contact area, which can increase detection sensitivity. The anodic alumina oxide template contains an array of pores, with a width of 70 nm and a length of 27μm. Au nanorod were obtained through electro-deposition under a pulse bias of −1 V. The resistance of the Au nanorod was recorded upon exposure to various concentrations of H2S. The resistance could be attributed to the high electron affinity between sulfide and Au nanorod. Au–sulfide bonds provide strong bonding, which could alter the conductivity of the sensor. The gas sensor exhibits high sensitivity and short response time for H2S detection at room temperature.

  19. Effects of organic plant oils and role of oxidation on nutrient utilization in juvenile rainbow trout (Oncorhynchus mykiss).

    Science.gov (United States)

    Lund, I; Dalsgaard, J; Jacobsen, C; Hansen, J H; Holm, J; Jokumsen, A

    2013-03-01

    Producing organic fish diets requires that the use of both fishmeal and fish oil (FO) be minimized and replaced by sustainable, organic sources. The purpose of the present study was to replace FO with organic oils and evaluate the effects on feed intake, feed conversion ratio (FCR), daily specific growth rate (SGR) and nutrient digestibility in diets in which fishmeal protein was partly substituted by organic plant protein concentrates. It is prohibited to add antioxidants to organic oils, and therefore the effects of force-oxidizing the oils (including FO) on feed intake and nutrient digestibility was furthermore examined. Four organic oils with either a relatively high or low content of polyunsaturated fatty acids were considered: linseed oil, rapeseed oil, sunflower oil and grapeseed oil. Substituting FO with organic oils did not affect feed intake (P > 0.05), FCR or SGR (P > 0.05) despite very different dietary fatty acid profiles. All organic plant oils had a positive effect on apparent lipid digestibility compared with the FO diet (P digestibility of other macronutrients when compared with the FO diet (P > 0.05). Organic vegetable oils did not undergo auto-oxidation as opposed to the FO, and the FO diet consequently had a significantly negative effect on the apparent lipid digestibility. Feed intake was not affected by oxidation of any oils. In conclusion, the study demonstrated that it is possible to fully substitute FO with plant-based organic oils without negatively affecting nutrient digestibility and growth performance. Furthermore, plant-based organic oils are less likely to oxidize than FOs, prolonging the shelf life of such organic diets.

  20. Utilization of a by-product produced from oxidative desulfurization process over Cs-mesoporous silica catalysts.

    Science.gov (United States)

    Kim, Hyeonjoo; Jeong, Kwang-Eun; Jeong, Soon-Yong; Park, Young-Kwon; Kim, Do Heui; Jeon, Jong-Ki

    2011-02-01

    We investigated the use of Cs-mesoporous silica catalysts to upgrade a by-product of oxidative desulfurization (ODS). Cs-mesoporous silica catalysts were characterized through N2 adsorption, XRD, CO2-temperature-programmed desorption, and XRF. Cs-mesoporous silica prepared by the direct incorporation method showed higher catalytic performance than a Cs/MCM-41 catalyst by impregnation method for the catalytic decomposition of sulfone compounds produced from ODS process.

  1. Highly stable and imperceptible electronics utilizing photoactivated heterogeneous sol-gel metal-oxide dielectrics and semiconductors.

    Science.gov (United States)

    Jo, Jeong-Wan; Kim, Jaekyun; Kim, Kyung-Tae; Kang, Jin-Gu; Kim, Myung-Gil; Kim, Kwang-Ho; Ko, Hyungduk; Kim, Jiwan; Kim, Yong-Hoon; Park, Sung Kyu

    2015-02-18

    Incorporation of Zr into an AlOx matrix generates an intrinsically activated ZAO surface enabling the formation of a stable semiconducting IGZO film and good interfacial properties. Photochemically annealed metal-oxide devices and circuits with the optimized sol-gel ZAO dielectric and IGZO semiconductor layers demonstrate the high performance and electrically/mechanically stable operation of flexible electronics fabricated via a low-temperature solution process. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  2. Interface termination and band alignment of epitaxially grown alumina films on Cu-Al alloy

    Science.gov (United States)

    Yoshitake, Michiko; Song, Weijie; Libra, Jiří; Mašek, Karel; Šutara, František; Matolín, Vladimír; Prince, Kevin C.

    2008-02-01

    Epitaxial ultrathin alumina films were grown on a Cu-9 at. % Al(111) substrate by selective oxidation of Al in the alloy in ultrahigh vacuum. The photoelectron spectra of Al 2p and valence band were measured in situ during oxidation. By analyzing multiple peaks of Al 2p, the interface atomic structure was discussed. The energy difference between the Fermi level of the substrate and the valence band maximum of alumina (band offset) was obtained. The relation between the interface atomic structure and the band offset was compared with the reported first-principles calculations. A novel method for controlling the band offset was proposed.

  3. Near infrared group IV optoelectronics and novel pre-cursors for CVD epitaxy

    Science.gov (United States)

    Hazbun, Ramsey Michael

    Near infrared and mid infrared optoelectronic devices have become increasingly important for the telecommunications, security, and medical imaging industries. The addition of nitrogen to III-V alloys has been widely studied as a method of modifying the band gap for mid infrared (IR) applications. In xGa1-xSb1-y Ny/InAs strained-layer superlattices with type-II (staggered) energy offsets on GaSb substrates, were modeled using eight-band k˙p simulations to analyze the superlattice miniband energies. Three different zero-stress strain balance conditions are reported: fixed superlattice period thickness, fixed InAs well thickness, and fixed InxGa1-xSb 1-yNy barrier thickness. Optoelectronics have traditionally been the realm of III-V semiconductors due to their direct band gap, while integrated circuit chips have been the realm of Group IV semiconductors such as silicon because of its relative abundance and ease of use. Recently the alloying of Sn with Ge and Si has been shown to allow direct band-gap light emission. This presents the exciting prospect of integrating optoelectronics into current Group IV chip fabrication facilities. However, new approaches for low temperature growth are needed to realize these new SiGeSn alloys. Silicon-germanium epitaxy via ultra-high vacuum chemical vapor deposition has the advantage of allowing low process temperatures. Deposition processes are sensitive to substrate surface preparation and the time delay between oxide removal and epitaxial growth. A new monitoring process utilizing doped substrates and defect decoration etching is demonstrated to have controllable and unique sensitivity to interfacial contaminants. Doped substrates were prepared and subjected to various loading conditions prior to the growth of typical Si/SiGe bilayers. The defect densities were correlated to the concentration of interfacial oxygen suggesting this monitoring process may be an effective complement to monitoring via secondary ion mass spectrometry

  4. Epitaxially grown zinc-blende structured Mn doped ZnO nanoshell on ZnS nanoparticles

    International Nuclear Information System (INIS)

    Limaye, Mukta V.; Singh, Shashi B.; Date, Sadgopal K.; Gholap, R.S.; Kulkarni, Sulabha K.

    2009-01-01

    Zinc oxide in the bulk as well as in the nanocrystalline form is thermodynamically stable in the wurtzite structure. However, zinc oxide in the zinc-blende structure is more useful than that in the wurtzite structure due to its superior electronic properties as well as possibility of efficient doping. Therefore, zinc oxide shell is grown epitaxially on zinc sulphide core nanoparticles having zinc-blende structure. It is shown that doping of manganese could be achieved in zinc oxide nanoshell with zinc-blende structure

  5. Fiber optic hydrogen gas sensor utilizing surface plasmon resonance and native defects of zinc oxide by palladium

    International Nuclear Information System (INIS)

    Tabassum, Rana; Gupta, Banshi D

    2016-01-01

    We present an experimental study on a surface plasmon resonance (SPR) based fiber optic hydrogen gas sensor employing a palladium doped zinc oxide nanocomposite (ZnO (1−x) Pd x , 0 ≤ x ≤ 0.85) layer over the silver coated unclad core of the fiber. Palladium doped zinc oxide nanocomposites (ZnO (1−x) Pd x )  are prepared by a chemical route for different composition ratios and their structural, morphological and hydrogen sensing properties are investigated experimentally. The sensing principle involves the absorption of hydrogen gas by ZnO (1−x) Pd x , altering its dielectric function. The change in the dielectric constant is analyzed in terms of the red shift of the resonance wavelength in the visible region of the electromagnetic spectrum. To check the sensing capability of sensing probes fabricated with varying composition ratio (x) of nanocomposite, the SPR curves are recorded typically for 0% H 2 and 4% H 2 in N 2 atmosphere for each fabricated probe. On changing the concentration of hydrogen gas from 0% to 4%, the red shift in the SPR spectrum confirms the change in dielectric constant of ZnO (1−x) Pd x on exposure to hydrogen gas. It is noted that the shift in the SPR spectrum increases monotonically up to a certain fraction of Pd in zinc oxide, beyond which it starts decreasing. SEM images and the photoluminescence (PL) spectra reveal that Pd dopant atoms substitutionally incorporated into the ZnO lattice profoundly affect its defect levels; this is responsible for the optimal composition of ZnO (1−x) Pd x to sense the hydrogen gas. The sensor is highly selective to hydrogen gas and possesses high sensitivity. Since optical fiber sensing technology is employed along with the SPR technique, the present sensor is capable of remote sensing and online monitoring of hydrogen gas. (paper)

  6. Surface plasmon resonance-based fiber-optic hydrogen gas sensor utilizing palladium supported zinc oxide multilayers and their nanocomposite.

    Science.gov (United States)

    Tabassum, Rana; Gupta, Banshi D

    2015-02-10

    We analyze surface plasmon resonance-based fiber-optic sensor for sensing of small concentrations of hydrogen gas in the visible region of the electromagnetic spectrum. One of the two probes considered has multilayers of zinc oxide (ZnO) and palladium (Pd) while the other has layer of their composite over a silver coated unclad core of the fiber. The analysis is carried out for different volume fractions of palladium nanoparticles dispersed in zinc oxide host material in the nanocomposite layer. For the analysis, a Maxwell-Garnett model is adopted for calculating the dielectric function of a ZnO:Pd nanocomposite having nanoparticles of dimensions smaller than the wavelength of radiation used. The effects of the volume fraction of the nanoparticles in the nanocomposite and the thickness of the nanocomposite layer on the figure of merit of the sensor have been studied. The film thickness of the layer and the volume fraction of nanoparticles in the ZnO:Pd nanocomposite layer have been optimized to achieve the maximum value of the figure of merit of the sensor. It has been found that the figure of merit of the sensing probe coated with ZnO:Pd nanocomposite is more than twofold of the sensing probe coated with multilayers of Pd and ZnO over a silver coated unclad core of the fiber; hence, the sensor with a nanocomposite layer works better than that with multilayers of zinc oxide and palladium. The sensor can be used for online monitoring and remote sensing of hydrogen gas.

  7. Probing the bulk ionic conductivity by thin film hetero-epitaxial engineering

    KAUST Repository

    Pergolesi, Daniele

    2015-02-01

    Highly textured thin films with small grain boundary regions can be used as model systems to directly measure the bulk conductivity of oxygen ion conducting oxides. Ionic conducting thin films and epitaxial heterostructures are also widely used to probe the effect of strain on the oxygen ion migration in oxide materials. For the purpose of these investigations a good lattice matching between the film and the substrate is required to promote the ordered film growth. Moreover, the substrate should be a good electrical insulator at high temperature to allow a reliable electrical characterization of the deposited film. Here we report the fabrication of an epitaxial heterostructure made with a double buffer layer of BaZrO3 and SrTiO3 grown on MgO substrates that fulfills both requirements. Based on such template platform, highly ordered (001) epitaxially oriented thin films of 15% Sm-doped CeO2 and 8 mol% Y2O3 stabilized ZrO2 are grown. Bulk conductivities as well as activation energies are measured for both materials, confirming the success of the approach. The reported insulating template platform promises potential application also for the electrical characterization of other novel electrolyte materials that still need a thorough understanding of their ionic conductivity.

  8. Quantitative iTRAQ-based secretome analysis reveals species-specific and temporal shifts in carbon utilization strategies among manganese(II)-oxidizing Ascomycete fungi

    Energy Technology Data Exchange (ETDEWEB)

    Zeiner, Carolyn A.; Purvine, Samuel O.; Zink, Erika M.; Paša-Tolić, Ljiljana; Chaput, Dominique L.; Wu, Si; Santelli, Cara M.; Hansel, Colleen M.

    2017-09-01

    Fungi generate a wide range of extracellular hydrolytic and oxidative enzymes and reactive metabolites, collectively known as the secretome, that synergistically drive plant litter decomposition in the environment. While secretome studies of model organisms have greatly expanded our knowledge of these enzymes, few have extended secretome characterization to environmental isolates or directly compared temporal patterns of enzyme utilization among diverse species. Thus, the mechanisms of carbon (C) degradation by many ubiquitous soil fungi remain poorly understood. Here we use a combination of iTRAQ proteomics and custom bioinformatic analyses to compare the protein composition of the secretomes of four manganese(II)-oxidizing Ascomycete fungi over a three-week time course. We demonstrate that although the fungi produce a similar suite of extracellular enzymes, they exhibit striking differences in the regulation of these enzymes among species and over time, revealing species-specific and temporal shifts in C utilization strategies as they degrade the same substrate. Specifically, our findings suggest that Paraconiothyrium sporulosum AP3s5-JAC2a and Alternaria alternata SRC1lrK2f employ sequential enzyme secretion patterns concomitant with decreasing resource availability, Stagonospora sp. SRC1lsM3a preferentially degrades proteinaceous substrate before switching to carbohydrates, and Pyrenochaeta sp. DS3sAY3a utilizes primarily peptidases to aggressively attack carbon sources in a concentrated burst. This work highlights the diversity of operative metabolic strategies among cellulose-degrading Ascomycetes and enhances our understanding of their role in C turnover in the environment.

  9. Smart Methods for Linezolid Determination in the Presence of Alkaline and Oxidative Degradation Products Utilizing Their Overlapped Spectral Bands

    Science.gov (United States)

    Abd El-Monem Hegazy, M.; Shaaban Eissa, M.; Abd El-Sattar, O. I.; Abd El-Kawy, M. M.

    2014-09-01

    Linezolid (LIN) is considered the first available oxazolidinone antibacterial agent. It is susceptible to hydrolysis and oxidation. Five simple, accurate, sensitive and validated UV spectrophotometric methods were developed for LIN determination in the presence of its alkaline (ALK) and oxidative (OXD) degradation products in bulk powder and pharmaceutical formulation. Method A is a second derivative one (D2) in which LIN is determined at 240.9 nm. Method B is a pH-induced differential derivative one where LIN is determined using the fourth derivative (D4) of the difference spectra (ΔA) at 285.3 nm. Methods C, D, and E are manipulating ratio spectra, where C is the double divisor-ratio difference spectrophotometric one (DD-RD) in which LIN was determined by calculating the amplitude difference at 243.7 and 267.6 nm of the ratio spectra. Method D is the double divisor-first derivative of ratio spectra (DD-DD1) in which LIN was determined at 270.2 nm. Method E is a mean centering of ratio spectra one (MCR) in which LIN was determined at 318.0 nm. The developed methods have been validated according to ICH guidelines. The results were statistically compared to that of a reported HPLC method and there was no significant difference regarding both accuracy and precision.

  10. Effects of organic plant oils and role of oxidation on nutrient utilization in juvenile rainbow trout (Oncorhynchus mykiss)

    DEFF Research Database (Denmark)

    Lund, Ivar; Dalsgaard, Anne Johanne Tang; Jacobsen, Charlotte

    2013-01-01

    Producing organic fish diets requires that the use of both fishmeal and fish oil (FO) be minimized and replaced by sustainable, organic sources. The purpose of the present study was to replace FO with organic oils and evaluate the effects on feed intake, feed conversion ratio (FCR), daily specifi...... with plant-based organic oils without negatively affecting nutrient digestibility and growth performance. Furthermore, plant-based organic oils are less likely to oxidize than FOs, prolonging the shelf life of such organic diets...... growth rate (SGR) and nutrient digestibility in diets in which fishmeal protein was partly substituted by organic plant protein concentrates. It is prohibited to add antioxidants to organic oils, and therefore the effects of force-oxidizing the oils (including FO) on feed intake and nutrient...... very different dietary fatty acid profiles. All organic plant oils had a positive effect on apparent lipid digestibility compared with the FO diet (P,0.05), whereas there were no effects on the apparent digestibility of other macronutrients when compared with the FO diet (P.0.05). Organic vegetable...

  11. Improved vertical MOSFET performance using an epitaxial channel and a stacked silicon-insulator structure

    International Nuclear Information System (INIS)

    Uchino, T; Gili, E; Ashburn, P; Tan, L; Buiu, O; Hall, S

    2012-01-01

    A vertical MOSFET (VMOST) incorporating an epitaxial channel and a drain junction in a stacked silicon-insulator structure is presented. In this device structure, an oxide layer near the drain junction edge (referred to as a junction stop) acts as a dopant diffusion barrier and consequently a shallow drain junction is formed to suppress short channel effects. To investigate the scalability of this device, a simulation study in the sub-100 nm regime calibrated to measured results on the fabricated devices is carried out. The use of an epitaxial channel delivers 50% higher drive current due to the higher mobility of the retrograde channel and the junction stop structure delivers improvements of threshold voltage roll-off and drain-induced barrier lowering compared with a conventional VMOST. (fast track communication)

  12. Possibility of Modification of Zeolites by Iron Oxides and its Utilization for Removal of Pb(II from Water Solutions

    Directory of Open Access Journals (Sweden)

    Michal Lovás

    2004-12-01

    Full Text Available Ion-exchange properties of cations from lattice and ions from solutions are characteristic for zeolites. Zeolites as sorbents are used in many branches of industry. Ion-exchange reactions of cations on zeolites have been a theme of many works. With the exception of using natural zeolites as the sorbent, a modification of surface of zeolites and preparation of synthetic zeolites has received interest lately. One of the common modification of zeolites is modification by iron oxides, which increases capacity of adsorption. In this work, we prepared a modified zeolite by the precipitation of magnetite on the surface of zeolite. This new adsorbent was used to remove of Pb(II from waste water. The maximum adsorption capacity was 73,25 mg/g from the solution of Pb with the concentration of 400 mg/l.

  13. Biosynthesis of nano cupric oxide on cotton using Seidlitzia rosmarinus ashes utilizing bio, photo, acid sensing and leaching properties.

    Science.gov (United States)

    Bashiri Rezaie, Ali; Montazer, Majid; Rad, Mahnaz Mahmoudi

    2017-12-01

    In this research, a facile, rapid and eco-friendly method is introduced for synthesis and loading of cupric oxide on cellulosic chains of cotton fabric with functional properties. Seidlitzia rosmarinus ashes and copper acetate were employed as a natural source of alkaline and metal salt without further chemical materials. The treated samples indicated very good antibacterial activities toward both pathogen Staphylococcus aureus as Gram-positive and Escherichia coli as Gram-negative bacteria. Significant self-cleaning properties against degradation of methylene blue stain under UV irradiation were found. The sensing properties of high concentrated inorganic and organic acids such as sulfuric and formic acids based on colorimetric alterations of the treated fabrics were also confirmed showing acid leaching effects of the treated fabrics. Further, the treated samples showed coloring effects with an enhancement on the physio-mechanical properties including tensile strength, crease recovery angle and hydrophobocity. Copyright © 2017 Elsevier Ltd. All rights reserved.

  14. Synthesis of tungsten oxide (W{sub 18}O{sub 49}) nanosheets utilizing EDTA salt by microwave irradiation method

    Energy Technology Data Exchange (ETDEWEB)

    Hariharan, V.; Parthibavarman, M. [Centre for Nanoscience and Technology, Department of Physics, Periyar University, Salem 636 011, Tamilnadu (India); Sekar, C., E-mail: Sekar2025@gmail.com [Centre for Nanoscience and Technology, Department of Physics, Periyar University, Salem 636 011, Tamilnadu (India); Department of Bioelectronics and Biosensors, Alagappa University, Karaikudi 630 003, Tamilnadu (India)

    2011-04-07

    Research highlights: > We have synthesized tungsten oxide (WO{sub 3-{delta}}) nanoparticles by microwave irradiation method for the first time using EDTA as surface modulator. The variation in stoichiometric oxygen content of the annealed samples clearly indicates the role of EDTA in reaction medium. The variation in oxygen content also modified the transparency of the end product confirming the change in optical conductivity. - Abstract: We report the synthesis of crystalline W{sub 18}O{sub 49} with nanosheet like morphology by low cost microwave irradiation method without employing hydrothermal process for the first time. Initially, WO{sub 3}.H{sub 2}O was synthesized using ethylenediaminetetraacetic acid (EDTA) as surface modulator. The product was annealed at 600 {sup o}C for 6 h in ambient atmosphere in order to obtain anhydrous tungsten oxide W{sub 18}O{sub 49}. Powder X-ray diffraction results confirmed the as prepared WO{sub 3}.H{sub 2}O to be orthorhombic and W{sub 18}O{sub 49} to be monoclinic phase, respectively. Transmission electron micrographs (TEM) revealed that the W{sub 18}O{sub 49} nanosheets have the average dimensions of the order of 250 nm in length and around 150 nm in width. UV-visible diffusion reflectance spectroscopic (DRS) studies revealed the band gap energies to be 3.28 and 3.47 eV for WO{sub 3}.H{sub 2}O and W{sub 18}O{sub 49} samples, respectively. The growth mechanism of two dimensional W{sub 18}O{sub 49} nanosheets is discussed.

  15. Integration of functional complex oxide nanomaterials on silicon

    Directory of Open Access Journals (Sweden)

    Jose Manuel eVila-Fungueiriño

    2015-06-01

    Full Text Available The combination of standard wafer-scale semiconductor processing with the properties of functional oxides opens up to innovative and more efficient devices with high value applications that can be produced at large scale. This review uncovers the main strategies that are successfully used to monolithically integrate functional complex oxide thin films and nanostructures on silicon: the chemical solution deposition approach (CSD and the advanced physical vapor deposition techniques such as oxide molecular beam epitaxy (MBE. Special emphasis will be placed on complex oxide nanostructures epitaxially grown on silicon using the combination of CSD and MBE. Several examples will be exposed, with a particular stress on the control of interfaces and crystallization mechanisms on epitaxial perovskite oxide thin films, nanostructured quartz thin films, and octahedral molecular sieve nanowires. This review enlightens on the potential of complex oxide nanostructures and the combination of both chemical and physical elaboration techniques for novel oxide-based integrated devices.

  16. Complex Nanostructures by Pulsed Droplet Epitaxy

    Directory of Open Access Journals (Sweden)

    Noboyuki Koguchi

    2011-06-01

    Full Text Available What makes three dimensional semiconductor quantum nanostructures so attractive is the possibility to tune their electronic properties by careful design of their size and composition. These parameters set the confinement potential of electrons and holes, thus determining the electronic and optical properties of the nanostructure. An often overlooked parameter, which has an even more relevant effect on the electronic properties of the nanostructure, is shape. Gaining a strong control over the electronic properties via shape tuning is the key to access subtle electronic design possibilities. The Pulsed Dropled Epitaxy is an innovative growth method for the fabrication of quantum nanostructures with highly designable shapes and complex morphologies. With Pulsed Dropled Epitaxy it is possible to combine different nanostructures, namely quantum dots, quantum rings and quantum disks, with tunable sizes and densities, into a single multi-function nanostructure, thus allowing an unprecedented control over electronic properties.

  17. Optical Epitaxial Growth of Gold Nanoparticle Arrays.

    Science.gov (United States)

    Huang, Ningfeng; Martínez, Luis Javier; Jaquay, Eric; Nakano, Aiichiro; Povinelli, Michelle L

    2015-09-09

    We use an optical analogue of epitaxial growth to assemble gold nanoparticles into 2D arrays. Particles are attracted to a growth template via optical forces and interact through optical binding. Competition between effects determines the final particle arrangements. We use a Monte Carlo model to design a template that favors growth of hexagonal particle arrays. We experimentally demonstrate growth of a highly stable array of 50 gold particles with 200 nm diameter, spaced by 1.1 μm.

  18. Junction Transport in Epitaxial Film Silicon Heterojunction Solar Cells: Preprint

    Energy Technology Data Exchange (ETDEWEB)

    Young, D. L.; Li, J. V.; Teplin, C. W.; Stradins, P.; Branz, H. M.

    2011-07-01

    We report our progress toward low-temperature HWCVD epitaxial film silicon solar cells on inexpensive seed layers, with a focus on the junction transport physics exhibited by our devices. Heterojunctions of i/p hydrogenated amorphous Si (a-Si) on our n-type epitaxial crystal Si on n++ Si wafers show space-charge-region recombination, tunneling or diffusive transport depending on both epitaxial Si quality and the applied forward voltage.

  19. Ion beam deposited epitaxial thin silicon films

    International Nuclear Information System (INIS)

    Orrman-Rossiter, K.G.; Al-Bayati, A.H.; Armour, D.G.; Donnelly, S.E.; Berg, J.A. van den

    1991-01-01

    Deposition of thin films using low energy, mass-separated ion beams is a potentially important low temperature method of producing epitaxial layers. In these experiments silicon films were grown on Si (001) substrates using 10-200 eV 28 Si + and 30 Si + ions at substrate temperatures in the range 273-1073 K, under ultrahigh-vacuum conditions (deposition pressure -7 Pa). The film crystallinity was assessed in situ using medium energy ion scattering (MEIS). Films of crystallinity comparable to bulk samples were grown using 10-40 eV 28 Si + and 30 Si + ions at deposition temperatures in the range 623-823 K. These experiments confirmed the role of key experimental parameters such as ion energy, substrate temperature during deposition, and the surface treatment prior to deposition. It was found that a high temperature in situ anneal (1350-1450 K) gave the best results for epitaxial nucleation, whereas low energy (20-40 eV) Cl + ion bombardment resulted in amorphous film growth. The deposition energy for good epitaxial growth indicates that it is necessary to provide enough energy to induce local mobility but not to cause atomic displacements leading to the buildup of stable defects, e.g. divacancies, below the surface layer of the growing film. (orig.)

  20. Synchrotron radiation excited silicon epitaxy using disilane

    International Nuclear Information System (INIS)

    Akazawa, Housei; Utsumi, Yuichi

    1995-01-01

    Synchrotron radiation (SR) excited chemical reactions provide new crystal growth methods suitable for low-temperature Si epitaxy. The growth kinetics and film properties were investigated by atomic layer epitaxy (ALE) and photochemical vapor deposition (CVD) modes using Si 2 H 6 . SR-ALE, isolating the surface growth channel mediated by photon stimulated hydrogen desorption, achieves digital growth independent of gas exposure time, SR irradiation time, and substrate temperature. On the other hand in SR-CVD, photolysis of Si 2 H 6 is predominant. In the nonirradiated region, Eley-Rideal type reaction between the photofragments and the surface deposit Si adatoms in a layer-by-layer fashion. In the irradiated region, however, multi-layer photolysis and rebounding occurs within the condensed Si 2 H 6 layer. The pertinent elementary processes were identified by using the high-resolution time-of-flight mass spectroscopy. The SR-CVD can grow a uniform and epitaxial Si film down to 200degC. The surface morphology is controlled by the surfactant effect of hydrogen atoms. (author)

  1. Growth of pseudomorphic structures through organic epitaxy

    International Nuclear Information System (INIS)

    Kaviyil, Sreejith Embekkat; Sassella, Adele; Borghesi, Alessandro; Campione, Marcello; Su Genbo; He Youping; Chen Chenjia

    2012-01-01

    The control of molecular orientation in thin solid film phases of organic semiconductors is a basic factor for the exploitation of their physical properties for optoelectronic devices. We compare structural and optical properties of thin films of the organic semiconductor α-quarterthiophene grown by molecular beam epitaxy on different organic substrates. We show how epitactic interactions, characteristic of the surface of organic crystals, can drive the orientation of the crystalline overlayer and the selection of specific polymorphs and new pseudomorphic phases. We identify a key role in this phenomenon played by the marked groove-like corrugations present in some organic crystal surfaces. Since different polymorphs possess rather different performance in terms of, e.g., charge carrier mobility, this strategy is demonstrated to allow for the growth of oriented phases with enhanced physical properties, while keeping the substrate at room temperature. These results provide useful guidelines for the design of technological substrates for organic epitaxy and they substantiate the adoption of an organic epitaxy approach for the fabrication of optoelectronic devices based on thin films of organic semiconductors.

  2. Nanoscale abnormal grain growth in (001) epitaxial ceria

    International Nuclear Information System (INIS)

    Solovyov, Vyacheslav F.; Develos-Bagarinao, Katherine; Nykypanchuk, Dmytro

    2009-01-01

    X-ray reciprocal-space mapping and atomic force microscopy (AFM) are used to study kinetics and mechanisms of lateral grain growth in epitaxial (001) ceria (CeO 2 ) deposited by pulsed laser deposition on (001) yttria-stabilized zirconia (YSZ) and (12 lowbar 10) (r-cut) sapphire. Rate and character of the grain growth during postannealing at 1050 deg. C are found to be strongly dependent on the type of the epitaxial substrate. Films deposited on YSZ exhibit signatures of normal grain growth, which stagnated after the lateral grain size reaches 40 nm, consistent with the grain-boundary pinning by the thermal grooving. In contrast, when r-cut sapphire substrate was used, abnormal (secondary) grain growth is observed. A small population of grains grow to well over 100 nm consuming smaller, 100 nm large (001) terminations and rendering the sample single-crystalline quality. The grain growth is accompanied by reduction in lateral rms strain, resulting in a universal grain size--rms strain dependence. Analysis of the AFM and x-ray diffraction data leads to the conclusion that bimodal initial grain population consisting of grains with very different sizes is responsible for initiation of the abnormal growth in (001) CeO 2 films on r-cut sapphire. Due to different surface chemistry, when a YSZ substrate is used, the initial grain distribution is monomodal, therefore only normal growth is active. We demonstrate that a 2.2 deg. miscut of the sapphire substrate eliminates the large-grain population, thus suppressing abnormal grain growth. It is concluded that utilization of abnormal grain growth is a promising way for synthesis of large (001) ceria terminations.

  3. The utilization of SiNWs/AuNPs-modified indium tin oxide (ITO) in fabrication of electrochemical DNA sensor.

    Science.gov (United States)

    Rashid, Jahwarhar Izuan Abdul; Yusof, Nor Azah; Abdullah, Jaafar; Hashim, Uda; Hajian, Reza

    2014-12-01

    This work describes the incorporation of SiNWs/AuNPs composite as a sensing material for DNA detection on indium tin-oxide (ITO) coated glass slide. The morphology of SiNWs/AuNPs composite as the modifier layer on ITO was studied by scanning electron microscopy (SEM) and energy dispersive X-ray spectroscopy (EDX). The morphological studies clearly showed that SiNWs were successfully decorated with 20 nm-AuNPs using self-assembly monolayer (SAM) technique. The effective surface area for SiNWs/AuNPs-modified ITO enhanced about 10 times compared with bare ITO electrode. SiNWs/AuNPs nanocomposite was further explored as a matrix for DNA probe immobilization in detection of dengue virus as a bio-sensing model to evaluate its performance in electrochemical sensors. The hybridization of complementary DNA was monitored by differential pulse voltammetry (DPV) using methylene blue (MB) as the redox indicator. The fabricated biosensor was able to discriminate significantly complementary, non-complementary and single-base mismatch oligonucleotides. The electrochemical biosensor was sensitive to target DNA related to dengue virus in the range of 9.0-178.0 ng/ml with detection limit of 3.5 ng/ml. In addition, SiNWs/AuNPs-modified ITO, regenerated up to 8 times and its stability was up to 10 weeks at 4°C in silica gel. Copyright © 2014 Elsevier B.V. All rights reserved.

  4. Utilization of organic nitrogen by arbuscular mycorrhizal fungi-is there a specific role for protists and ammonia oxidizers?

    Science.gov (United States)

    Bukovská, Petra; Bonkowski, Michael; Konvalinková, Tereza; Beskid, Olena; Hujslová, Martina; Püschel, David; Řezáčová, Veronika; Gutiérrez-Núñez, María Semiramis; Gryndler, Milan; Jansa, Jan

    2018-04-01

    Arbuscular mycorrhizal (AM) fungi can significantly contribute to plant nitrogen (N) uptake from complex organic sources, most likely in concert with activity of soil saprotrophs and other microbes releasing and transforming the N bound in organic forms. Here, we tested whether AM fungus (Rhizophagus irregularis) extraradical hyphal networks showed any preferences towards certain forms of organic N (chitin of fungal or crustacean origin, DNA, clover biomass, or albumin) administered in spatially discrete patches, and how the presence of AM fungal hyphae affected other microbes. By direct 15 N labeling, we also quantified the flux of N to the plants (Andropogon gerardii) through the AM fungal hyphae from fungal chitin and from clover biomass. The AM fungal hyphae colonized patches supplemented with organic N sources significantly more than those receiving only mineral nutrients, organic carbon in form of cellulose, or nothing. Mycorrhizal plants grew 6.4-fold larger and accumulated, on average, 20.3-fold more 15 N originating from the labeled organic sources than their nonmycorrhizal counterparts. Whereas the abundance of microbes (bacteria, fungi, or Acanthamoeba sp.) in the different patches was primarily driven by patch quality, we noted a consistent suppression of the microbial abundances by the presence of AM fungal hyphae. This suppression was particularly strong for ammonia oxidizing bacteria. Our results indicate that AM fungi successfully competed with the other microbes for free ammonium ions and suggest an important role for the notoriously understudied soil protists to play in recycling organic N from soil to plants via AM fungal hyphae.

  5. Epitaxial growth and new phase of single crystal Dy by molecular beam epitaxy

    International Nuclear Information System (INIS)

    Yang, Kai-Yueh; Homma, Hitoshi; Schuller, I.K.

    1987-09-01

    We have grown two novel epitaxial phases of dysprosium (Dy) on vanadium (V) by molecular beam epitaxy technique. Surface and bulk structures are studied by in-situ reflection high energy electron diffraction (RHEED) and x-ray diffraction techniques. The new hcp phases are ∼4% expanded uniformly in-plane (0001), and ∼9% and ∼4% expanded out of plane along the c-axes for non-interrupted and interrupted deposition case, respectively. We also observed (2 x 2), (3 x 3), and (4 x 4) Dy surface reconstruction patterns and a series of transitions as the Dy film thickness increases. 12 refs., 3 figs

  6. The utilization of SiNWs/AuNPs-modified indium tin oxide (ITO) in fabrication of electrochemical DNA sensor

    Energy Technology Data Exchange (ETDEWEB)

    Rashid, Jahwarhar Izuan Abdul [Institute of Advanced Technology, Universiti Putra Malaysia, 43400 Serdang, Selangor (Malaysia); Department of Chemistry and Biology, Centre for Defense Foundation Studies, National Defense University of Malaysia, Sungai Besi Camp, 57000 Kuala Lumpur (Malaysia); Department of Chemistry, Faculty of Science, Universiti Putra Malaysia, 43400 Serdang, Selangor (Malaysia); Yusof, Nor Azah, E-mail: azahy@upm.edu.my [Institute of Advanced Technology, Universiti Putra Malaysia, 43400 Serdang, Selangor (Malaysia); Department of Chemistry, Faculty of Science, Universiti Putra Malaysia, 43400 Serdang, Selangor (Malaysia); Abdullah, Jaafar [Institute of Advanced Technology, Universiti Putra Malaysia, 43400 Serdang, Selangor (Malaysia); Department of Chemistry, Faculty of Science, Universiti Putra Malaysia, 43400 Serdang, Selangor (Malaysia); Hashim, Uda [Institute of Nanoelectronic Engineering, Universiti Malaysia Perlis, 01000 Kangar, Perlis (Malaysia); Hajian, Reza, E-mail: rezahajian@upm.edu.my [Institute of Advanced Technology, Universiti Putra Malaysia, 43400 Serdang, Selangor (Malaysia)

    2014-12-01

    This work describes the incorporation of SiNWs/AuNPs composite as a sensing material for DNA detection on indium tin-oxide (ITO) coated glass slide. The morphology of SiNWs/AuNPs composite as the modifier layer on ITO was studied by scanning electron microscopy (SEM) and energy dispersive X-ray spectroscopy (EDX). The morphological studies clearly showed that SiNWs were successfully decorated with 20 nm-AuNPs using self-assembly monolayer (SAM) technique. The effective surface area for SiNWs/AuNPs-modified ITO enhanced about 10 times compared with bare ITO electrode. SiNWs/AuNPs nanocomposite was further explored as a matrix for DNA probe immobilization in detection of dengue virus as a bio-sensing model to evaluate its performance in electrochemical sensors. The hybridization of complementary DNA was monitored by differential pulse voltammetry (DPV) using methylene blue (MB) as the redox indicator. The fabricated biosensor was able to discriminate significantly complementary, non-complementary and single-base mismatch oligonucleotides. The electrochemical biosensor was sensitive to target DNA related to dengue virus in the range of 9.0–178.0 ng/ml with detection limit of 3.5 ng/ml. In addition, SiNWs/AuNPs-modified ITO, regenerated up to 8 times and its stability was up to 10 weeks at 4 °C in silica gel. - Highlights: • A sensitive biosensor is presented for detection of dengue virus. • SiNWs and AuNPs used as nanocomposite layers on ITO for construction of biosensor • The detection mechanism is based on the interaction of MB with DNA bonded on AuNPs. • The reduction signal of MB decreases upon complementary hybridization.

  7. A sustainable process to utilize ferrous sulfate waste from titanium oxide industry by reductive decomposition reaction with pyrite

    International Nuclear Information System (INIS)

    Huang, Penghui; Deng, Shaogang; Zhang, Zhiye; Wang, Xinlong; Chen, Xiaodong; Yang, Xiushan; Yang, Lin

    2015-01-01

    Highlights: • A newly developed treating process of ferrous sulfate was proposed. • The reaction process was discussed by thermodynamic analysis. • Thermodynamic analysis was compared with experiments results. • The kinetic model of the decomposition reaction was determined. • The reaction mechanism of autocatalytic reactions was explored. - Abstract: Ferrous sulfate waste has become a bottleneck in the sustainable development of the titanium dioxide industry in China. In this study, we propose a new method for the reductive decomposition of ferrous sulfate waste using pyrite. Thermodynamics analysis, tubular reactor experiments, and kinetics analysis were performed to analyze the reaction process. The results of the thermodynamic simulation showed that the reaction process and products were different when molar ratio of FeSO_4/FeS_2 was changed. The suitable molar ratio of FeSO_4/FeS_2 was 8–12. The reaction temperature of ferrous sulfate with pyrite was 580–770 K and the main products were Fe_3O_4 and SO_2. The simulation results agreed well with the experimental results. The desulphurization rate reached 98.55% and main solid products were Fe_3O_4 at 823.15 K when mole ratio of FeSO_4/FeS_2 was 8. Nano-sized magnetite was obtained at this condition. The kinetic model was investigated by isoconversional methods. The average E value was 244.34 kJ mol"−"1. The ferrous sulfate decomposition process can be treated as autocatalytic reaction mechanism, which corresponded to the expanded Prout–Tompson (Bna) model. The reaction mechanism of autocatalytic reactions during the process of ferrous sulfate decomposition were explored, the products of Fe oxide substances are the catalyst components.

  8. Large-Scale Mercury Control Technology Testing for Lignite-Fired Utilities - Oxidation Systems for Wet FGD

    Energy Technology Data Exchange (ETDEWEB)

    Steven A. Benson; Michael J. Holmes; Donald P. McCollor; Jill M. Mackenzie; Charlene R. Crocker; Lingbu Kong; Kevin C. Galbreath

    2007-03-31

    Mercury (Hg) control technologies were evaluated at Minnkota Power Cooperative's Milton R. Young (MRY) Station Unit 2, a 450-MW lignite-fired cyclone unit near Center, North Dakota, and TXU Energy's Monticello Steam Electric Station (MoSES) Unit 3, a 793-MW lignite--Powder River Basin (PRB) subbituminous coal-fired unit near Mt. Pleasant, Texas. A cold-side electrostatic precipitator (ESP) and wet flue gas desulfurization (FGD) scrubber are used at MRY and MoSES for controlling particulate and sulfur dioxide (SO{sub 2}) emissions, respectively. Several approaches for significantly and cost-effectively oxidizing elemental mercury (Hg{sup 0}) in lignite combustion flue gases, followed by capture in an ESP and/or FGD scrubber were evaluated. The project team involved in performing the technical aspects of the project included Babcock & Wilcox, the Energy & Environmental Research Center (EERC), the Electric Power Research Institute, and URS Corporation. Calcium bromide (CaBr{sub 2}), calcium chloride (CaCl{sub 2}), magnesium chloride (MgCl{sub 2}), and a proprietary sorbent enhancement additive (SEA), hereafter referred to as SEA2, were added to the lignite feeds to enhance Hg capture in the ESP and/or wet FGD. In addition, powdered activated carbon (PAC) was injected upstream of the ESP at MRY Unit 2. The work involved establishing Hg concentrations and removal rates across existing ESP and FGD units, determining costs associated with a given Hg removal efficiency, quantifying the balance-of-plant impacts of the control technologies, and facilitating technology commercialization. The primary project goal was to achieve ESP-FGD Hg removal efficiencies of {ge}55% at MRY and MoSES for about a month.

  9. The utilization of SiNWs/AuNPs-modified indium tin oxide (ITO) in fabrication of electrochemical DNA sensor

    International Nuclear Information System (INIS)

    Rashid, Jahwarhar Izuan Abdul; Yusof, Nor Azah; Abdullah, Jaafar; Hashim, Uda; Hajian, Reza

    2014-01-01

    This work describes the incorporation of SiNWs/AuNPs composite as a sensing material for DNA detection on indium tin-oxide (ITO) coated glass slide. The morphology of SiNWs/AuNPs composite as the modifier layer on ITO was studied by scanning electron microscopy (SEM) and energy dispersive X-ray spectroscopy (EDX). The morphological studies clearly showed that SiNWs were successfully decorated with 20 nm-AuNPs using self-assembly monolayer (SAM) technique. The effective surface area for SiNWs/AuNPs-modified ITO enhanced about 10 times compared with bare ITO electrode. SiNWs/AuNPs nanocomposite was further explored as a matrix for DNA probe immobilization in detection of dengue virus as a bio-sensing model to evaluate its performance in electrochemical sensors. The hybridization of complementary DNA was monitored by differential pulse voltammetry (DPV) using methylene blue (MB) as the redox indicator. The fabricated biosensor was able to discriminate significantly complementary, non-complementary and single-base mismatch oligonucleotides. The electrochemical biosensor was sensitive to target DNA related to dengue virus in the range of 9.0–178.0 ng/ml with detection limit of 3.5 ng/ml. In addition, SiNWs/AuNPs-modified ITO, regenerated up to 8 times and its stability was up to 10 weeks at 4 °C in silica gel. - Highlights: • A sensitive biosensor is presented for detection of dengue virus. • SiNWs and AuNPs used as nanocomposite layers on ITO for construction of biosensor • The detection mechanism is based on the interaction of MB with DNA bonded on AuNPs. • The reduction signal of MB decreases upon complementary hybridization

  10. Nitrogen utilization and digestibility of amino acids by lambs fed a high-concentrate diet with limestone or magnesium oxide.

    Science.gov (United States)

    Christiansen, M L; Webb, K E

    1990-07-01

    Effects were evaluated of high dietary levels of magnesium oxide (MgO) or limestone on DM, OM and CP digestibility, N balance and intestinal absorption of amino acids by lambs fed a high concentrate diet. Twelve wether lambs equipped with abomasal and ileal cannulas were blocked by weight and breeding and allotted to treatments in a randomized block design in two consecutive trials. Diets were control (800 g), control plus 1.5% MgO (812 g), control plus 1.5% limestone (812 g) and control plus 3.0% limestone (824 g) fed in two equal portions at 12-h intervals. Ruminal fluid pH differences were small. The pH of ileal digesta was greater (P less than .05) with MgO than with limestone (8.23 vs 7.73). Fecal pH was higher (P less than .01) for lambs fed all mineral treatments (avg 8.75) than for lambs fed the control (7.61) and was higher (P less than .01) when MgO (9.53) rather than limestone (8.36) was fed. Ruminal NH3N was lower (P less than .01) when lambs were fed MgO (11.9 mg/dl) compared with limestone (avg 31.2 mg/dl). Preintestinal DM digestibility was greatest (P less than .10) with limestone (avg 49.5%) feeding compared with feeding MgO (31.2%) or the control (35.4%). About 41.5% more essential (P less than .05) and 48% more nonessential (P less than .03) amino acids reached the small intestine when MgO was fed than when limestone was fed. Partial digestibility of amino acids in the small intestine was reduced (P less than .03) an average of 5 percentage units when MgO or limestone was fed. Feeding high levels of MgO or limestone to lambs did not improve the overall digestibility of DM, OM or CP. In fact, feeding high levels of MgO or limestone appeared to be detrimental, reducing intestinal absorption of amino acids.

  11. Physical properties and band structure of reactive molecular beam epitaxy grown oxygen engineered HfO{sub 2{+-}x}

    Energy Technology Data Exchange (ETDEWEB)

    Hildebrandt, Erwin; Kurian, Jose; Alff, Lambert [Institute of Materials Science, Technische Universitaet Darmstadt, 64287 Darmstadt (Germany)

    2012-12-01

    We have conducted a detailed thin film growth structure of oxygen engineered monoclinic HfO{sub 2{+-}x} grown by reactive molecular beam epitaxy. The oxidation conditions induce a switching between (111) and (002) texture of hafnium oxide. The band gap of oxygen deficient hafnia decreases with increasing amount of oxygen vacancies by more than 1 eV. For high oxygen vacancy concentrations, defect bands form inside the band gap that induce optical transitions and p-type conductivity. The resistivity changes by several orders of magnitude as a function of oxidation conditions. Oxygen vacancies do not give rise to ferromagnetic behavior.

  12. Metabolic engineering of a glycerol-oxidative pathway in Lactobacillus panis PM1 for utilization of bioethanol thin stillage: potential to produce platform chemicals from glycerol.

    Science.gov (United States)

    Kang, Tae Sun; Korber, Darren R; Tanaka, Takuji

    2014-12-01

    Lactobacillus panis PM1 has the ability to produce 1,3-propanediol (1,3-PDO) from thin stillage (TS), which is the major waste material after bioethanol production, and is therefore of significance. However, the fact that L. panis PM1 cannot use glycerol as a sole carbon source presents a considerable problem in terms of utilization of this strain in a wide range of industrial applications. Accordingly, L. panis PM1 was genetically engineered to directly utilize TS as a fermentable substrate for the production of valuable platform chemicals without the need for exogenous nutrient supplementation (e.g., sugars and nitrogen sources). An artificial glycerol-oxidative pathway, comprised of glycerol facilitator, glycerol kinase, glycerol 3-phosphate dehydrogenase, triosephosphate isomerase, and NADPH-dependent aldehyde reductase genes of Escherichia coli, was introduced into L. panis PM1 in order to directly utilize glycerol for the production of energy for growth and value-added chemicals. A pH 6.5 culture converted glycerol to mainly lactic acid (85.43 mM), whereas a significant amount of 1,3-propanediol (59.96 mM) was formed at pH 7.5. Regardless of the pH, ethanol (82.16 to 83.22 mM) was produced from TS fermentations, confirming that the artificial pathway metabolized glycerol for energy production and converted it into lactic acid or 1,3-PDO and ethanol in a pH-dependent manner. This study demonstrates the cost-effective conversion of TS to value-added chemicals by the engineered PM1 strain cultured under industrial conditions. Thus, application of this strain or these research findings can contribute to reduced costs of bioethanol production. Copyright © 2014, American Society for Microbiology. All Rights Reserved.

  13. The epitaxial growth and interfacial strain study of VO{sub 2}/MgF{sub 2} (001) films by synchrotron based grazing incidence X-ray diffraction

    Energy Technology Data Exchange (ETDEWEB)

    Fan, L.L. [Key Laboratory for Advanced Technology in Environmental Protection of Jiangsu Province, Yancheng Institute of Technology, Yancheng 224051 (China); National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei 230029 (China); Chen, S. [National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei 230029 (China); Liu, Q.H. [Science and Technology on Electro-optical Information Security Control Laboratory, Tianjin 300300 (China); Liao, G.M.; Chen, Y.L.; Ren, H. [National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei 230029 (China); Zou, C.W., E-mail: czou@ustc.edu.cn [National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei 230029 (China)

    2016-09-05

    High quality VO{sub 2} films with different thickness were epitaxially grown on MgF{sub 2} (001) substrates by oxide molecular beam epitaxy method. The evolution of interfacial strain was investigated by synchrotron based grazing incidence X-ray diffraction. By adjusting the incidence angles, the penetration depth of X-ray in VO{sub 2} film could be controlled and the thickness-depend lattice distortion in the epitaxial VO{sub 2} film was investigated. Due to the lattice mismatching, the pronounced tensile strain was observed in ultra-thin VO{sub 2} film. As the film thickness increasing, the interfacial strain relaxed gradually and became fully relaxed for thick VO{sub 2} films. Combined with the electric transport measurement, it was revealed that the phase transition temperature of ultra-thin VO{sub 2} film decreased greatly. The effect of interfacial strain induced phase transition modulation and the intrinsic mechanism was systematically discussed. - Highlights: • We prepared high quality VO{sub 2} epitaxial films on MgF{sub 2} (001) substrates by oxide molecular beam epitaxy method. • Synchrotron radiation grazing incidence X-ray diffraction was employed to detect evolution of strain along depth profile. • Based on a classic band structure model, the mechanism of strain controlled phase transition of VO{sub 2} was discussed.

  14. Thickness-modulated anisotropic ferromagnetism in Fe-doped epitaxial HfO2 thin films

    Science.gov (United States)

    Liu, Wenlong; Liu, Ming; Zhang, Ruyi; Ma, Rong; Wang, Hong

    2017-10-01

    Epitaxial tetragonal Fe-doped Hf0.95Fe0.05O2 (FHO) thin films with various thicknesses were deposited on (001)-oriented NdCaAlO4 (NCAO) substrates by using a pulsed laser deposition (PLD) system. The crystal structure and epitaxial nature of the FHO thin films were confirmed by typical x-ray diffraction (XRD) θ-2θ scan and reciprocal space mapping (RSM). The results indicate that two sets of lattice sites exist with two different crystal orientations [(001) and (100)] in the thicker FHO thin films. Further, the intensity of the (100) direction increases with the increase in thicknesses, which should have a significant effect on the anisotropic magnetization of the FHO thin films. Meanwhile, all the FHO thin films possess a tetragonal phase structure. An anisotropy behavior in magnetization has been observed in the FHO thin films. The anisotropic magnetization of the FHO thin films is slowly weakened as the thickness increases. Meanwhile, the saturation magnetization (Ms) of both in-plane and out-of-plane decreases with the increase in the thickness. The change in the anisotropic magnetization and Ms is attributed to the crystal lattice and the variation in the valence of Fe ions. These results indicate that the thickness-modulated anisotropic ferromagnetism of the tetragonal FHO epitaxial thin films is of potential use for the integration of metal-oxide semiconductors with spintronics.

  15. Reversal of lattice, electronic structure, and magnetism in epitaxial SrCoOx thin films

    Science.gov (United States)

    Jeen, H.; Choi, W. S.; Lee, J. H.; Cooper, V. R.; Lee, H. N.; Seo, S. S. A.; Rabe, K. M.

    2014-03-01

    SrCoOx (x = 2.5 - 3.0, SCO) is an ideal material to study the role of oxygen content for electronic structure and magnetism, since SCO has two distinct topotactic phases: the antiferromagnetic insulating brownmillerite SrCoO2.5 and the ferromagnetic metallic perovskite SrCoO3. In this presentation, we report direct observation of a reversible lattice and electronic structure evolution in SrCoOx epitaxial thin films as well as different magnetic and electronic ground states between the topotactic phases.[2] By magnetization measurements, optical absorption, and transport measurements drastically different electronic and magnetic ground states are found in the epitaxially grown SrCoO2.5 and SrCoO3 thin films by pulsed laser epitaxy. First-principles calculations confirm substantial, which originate from the modification in the Co valence states and crystallographic structures. By real-time spectroscopic ellipsometry, the two electronically and magnetically different phases can be reversibly changed by changing the ambient pressure at greatly reduced temperatures. Our finding provides an important pathway to understanding the novel oxygen-content-dependent phase transition uniquely found in multivalent transition metal oxides. The work was supported by the U.S. Department of Energy, Basic Energy Sciences, Materials Sciences and Engineering Division.

  16. BiFeO3 epitaxial thin films and devices: past, present and future

    Science.gov (United States)

    Sando, D.; Barthélémy, A.; Bibes, M.

    2014-11-01

    The celebrated renaissance of the multiferroics family over the past ten years has also been that of its most paradigmatic member, bismuth ferrite (BiFeO3). Known since the 1960s to be a high temperature antiferromagnet and since the 1970s to be ferroelectric, BiFeO3 only had its bulk ferroic properties clarified in the mid-2000s. It is however the fabrication of BiFeO3 thin films and their integration into epitaxial oxide heterostructures that have fully revealed its extraordinarily broad palette of functionalities. Here we review the first decade of research on BiFeO3 films, restricting ourselves to epitaxial structures. We discuss how thickness and epitaxial strain influence not only the unit cell parameters, but also the crystal structure, illustrated for instance by the discovery of the so-called T-like phase of BiFeO3. We then present its ferroelectric and piezoelectric properties and their evolution near morphotropic phase boundaries. Magnetic properties and their modification by thickness and strain effects, as well as optical parameters, are covered. Finally, we highlight various types of devices based on BiFeO3 in electronics, spintronics, and optics, and provide perspectives for the development of further multifunctional devices for information technology and energy harvesting.

  17. Rare earth elements and oxides in liquid phase epitaxy

    Czech Academy of Sciences Publication Activity Database

    Procházková, Olga; Grym, Jan; Zavadil, Jiří; Kopecká, M.

    2006-01-01

    Roč. 100, č. 8 (2006), s. 640-- ISSN 0009-2770. [Sjezd chemických společností /58./. Ústí nad Labem, 04.09.2006-08.09.2006] R&D Projects: GA ČR(CZ) GA102/06/0153 Institutional research plan: CEZ:AV0Z20670512 Keywords : semiconductor technology * rare earth metals Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 0.431, year: 2006

  18. Epitaxial oxide thin films by pulsed laser deposition: Retrospect and ...

    Indian Academy of Sciences (India)

    Unknown

    conductivity of the target solid is far too low to dissipate energy in the short .... with 7% Ag film grown on sapphire gave high performance in terms of low loss and ..... much attention because of their rich physics and proposed applications.

  19. Strain dependent microstructural modifications of BiCrO{sub 3} epitaxial thin films

    Energy Technology Data Exchange (ETDEWEB)

    Kannan, Vijayanandhini, E-mail: kvnandhini@gmail.com [Max Planck Institute of Microstructure Physics, Weinberg 2, D-06120 Halle (Saale) (Germany); CNRS, University of Bordeaux, ICMCB, UPR 9048, F-33600 Pessac (France); Arredondo, Miryam; Johann, Florian; Hesse, Dietrich [Max Planck Institute of Microstructure Physics, Weinberg 2, D-06120 Halle (Saale) (Germany); Labrugere, Christine [CNRS, University of Bordeaux, ICMCB, UPR 9048, F-33600 Pessac (France); CeCaMA, University of Bordeaux, ICMCB, F-33600 Pessac (France); Maglione, Mario [CNRS, University of Bordeaux, ICMCB, UPR 9048, F-33600 Pessac (France); Vrejoiu, Ionela [Max Planck Institute of Microstructure Physics, Weinberg 2, D-06120 Halle (Saale) (Germany)

    2013-10-31

    Strain-dependent microstructural modifications were observed in epitaxial BiCrO{sub 3} (BCO) thin films fabricated on single crystalline substrates, utilizing pulsed laser deposition. The following conditions were employed to modify the epitaxial-strain: (i) in-plane tensile strain, BCO{sub STO} [BCO grown on buffered SrTiO{sub 3} (001)] and in-plane compressive strain, BCO{sub NGO} [BCO grown on buffered NdGaO{sub 3} (110)] and (ii) varying BCO film thickness. A combination of techniques like X-ray diffraction, X-ray photoelectron spectroscopy (XPS) and high resolution transmission electron microscopy (TEM) was used to analyse the epitaxial growth quality and the microstructure of BCO. Our studies revealed that in the case of BCO{sub STO}, a coherent interface with homogeneous orthorhombic phase is obtained only for BCO film with thicknesses, d < 50 nm. All the BCO{sub STO} films with d ≥ 50 nm were found to be strain-relaxed with an orthorhombic phase showing 1/2 <100> and 1/4 <101> satellite reflections, the latter oriented at 45° from orthorhombic diffraction spots. High angle annular dark field scanning TEM of these films strongly suggested that the satellite reflections, 1/2 <100> and 1/4 <101>, originate from the atomic stacking sequence changes (or “modulated structure”) as reported for polytypes, without altering the chemical composition. The unaltered stoichiometry was confirmed by estimating both valency of Bi and Cr cations by surface and in-depth XPS analysis as well as the stoichiometric ratio (1 Bi:1 Cr) using scanning TEM–energy dispersive X-ray analysis. In contrast, compressively strained BCO{sub NGO} films exhibited monoclinic symmetry without any structural modulations or interfacial defects, up to d ∼ 200 nm. Our results indicate that both the substrate-induced in-plane epitaxial strain and the BCO film thickness are the crucial parameters to stabilise a homogeneous BCO phase in an epitaxially grown film. - Highlights: • Phase pure

  20. Interfaces and nanostructures of oxide octahedral frameworks

    Directory of Open Access Journals (Sweden)

    Felip eSandiumenge

    2014-08-01

    Full Text Available In the past decade, the rich physics exhibited by solid interfaces combining octahedral framework structures of transition metal oxides has fascinated the materials science community. However, the behavior of these materials still elude the current understanding of classical semiconductor and metal epitaxy. The reason for that is rooted in the surprising versatility of linked coordination units to adapt to a dissimilar substrate and the strong sensitivity of correlated oxides to external perturbations. The confluence of atomic control in oxide thin film epitaxy, state of the art high spatial resolution characterization techniques, and electronic structure computations, has allowed in recent years to obtain first insights on the underlying microscopic mechanisms governing the epitaxy of these fascinating materials. Here, we shortly review these mechanisms and highlight their potential in the design of novel nanostructures with enhanced functionalities.

  1. Epitaxial III-V nanowires on silicon for vertical devices

    NARCIS (Netherlands)

    Bakkers, E.P.A.M.; Borgström, M.T.; Einden, Van Den W.; Weert, van M.H.M.; Helman, A.; Verheijen, M.A.

    2006-01-01

    We show the epitaxial integration of III-V semiconductor nanowires with silicon technology. The wires are grown by the Vapor-Liquid-Solid (VLS) mechanism with laser ablation as well as metal organic vapor phase epitaxy. The VLS growth enables the fabrication of complex axial and radial

  2. Interface relaxation and band gap shift in epitaxial layers

    Directory of Open Access Journals (Sweden)

    Ziming Zhu

    2012-12-01

    Full Text Available Although it is well known that the interface relaxation plays the crucial role for the electronic properties in semiconductor epitaxial layers, there is lack of a clear definition of relationship between interfacial bond-energy variation and interface bond-nature-factor (IBNF in epitaxial layers before and after relaxation. Here we establish an analytical method to shed light on the relationship between the IBNF and the bond-energy change, as well as the relation with band offset in epitaxial layers from the perspective of atomic-bond-relaxation consideration and continuum mechanics. The theoretical predictions are consistent with the available evidences, which provide an atomistic understanding on underlying mechanism of interface effect in epitaxial nanostructures. Thus, it will be helpful for opening up to tailor physical-chemical properties of the epitaxial nanostructures to the desired specifications.

  3. SiGe epitaxial memory for neuromorphic computing with reproducible high performance based on engineered dislocations

    Science.gov (United States)

    Choi, Shinhyun; Tan, Scott H.; Li, Zefan; Kim, Yunjo; Choi, Chanyeol; Chen, Pai-Yu; Yeon, Hanwool; Yu, Shimeng; Kim, Jeehwan

    2018-01-01

    Although several types of architecture combining memory cells and transistors have been used to demonstrate artificial synaptic arrays, they usually present limited scalability and high power consumption. Transistor-free analog switching devices may overcome these limitations, yet the typical switching process they rely on—formation of filaments in an amorphous medium—is not easily controlled and hence hampers the spatial and temporal reproducibility of the performance. Here, we demonstrate analog resistive switching devices that possess desired characteristics for neuromorphic computing networks with minimal performance variations using a single-crystalline SiGe layer epitaxially grown on Si as a switching medium. Such epitaxial random access memories utilize threading dislocations in SiGe to confine metal filaments in a defined, one-dimensional channel. This confinement results in drastically enhanced switching uniformity and long retention/high endurance with a high analog on/off ratio. Simulations using the MNIST handwritten recognition data set prove that epitaxial random access memories can operate with an online learning accuracy of 95.1%.

  4. Optimized electrode coverage of membrane actuators based on epitaxial PZT thin films

    International Nuclear Information System (INIS)

    Nguyen, M D; Dekkers, M; Blank, D H A; Rijnders, G; Nazeer, H

    2013-01-01

    This research presents an optimization of piezoelectric membrane actuators by maximizing the actuator displacement. Membrane actuators based on epitaxial Pb(Zr,Ti)O 3 thin films grown on all-oxide electrodes and buffer layers using silicon technology were fabricated. Electrode coverage was found to be an important factor in the actuation displacement of the piezoelectric membranes. The optimum electrode coverage for maximum displacement was theoretically determined to be 39%, which is in good agreement with the experimental results. Dependences of membrane displacement and optimum electrode coverage on membrane diameter and PZT-film/Si-device-layer thickness ratio have also been investigated. (paper)

  5. Perspective: Extremely fine tuning of doping enabled by combinatorial molecular-beam epitaxy

    Directory of Open Access Journals (Sweden)

    J. Wu

    2015-06-01

    Full Text Available Chemical doping provides an effective method to control the electric properties of complex oxides. However, the state-of-art accuracy in controlling doping is limited to about 1%. This hampers elucidation of the precise doping dependences of physical properties and phenomena of interest, such as quantum phase transitions. Using the combinatorial molecular beam epitaxy, we improve the accuracy in tuning the doping level by two orders of magnitude. We illustrate this novel method by two examples: a systematic investigation of the doping dependence of interface superconductivity, and a study of the competing ground states in the vicinity of the insulator-to-superconductor transition.

  6. Epitaxial growth of atomically flat gadolinia-doped ceria thin films by pulsed laser deposition

    DEFF Research Database (Denmark)

    Chen, Yunzhong; Pryds, Nini; Schou, Jørgen

    2011-01-01

    Epitaxial growth of Ce0.8Gd0.2O2(CGO) films on (001) TiO2-terminated SrTiO3 substrates by pulsed laser deposition was investigated using in situ reflective high energy electron diffraction. The initial film growth shows a Stransky–Krastanov growth mode. However, this three-dimensional island...... formation is replaced by a two-dimensional island nucleation during further deposition, which results in atomically smooth CGO films. The obtained high-quality CGO films may be attractive for the electrolyte of solid-oxide fuel cells operating at low temperature....

  7. Spin Seebeck effect in insulating epitaxial γ−Fe2O3 thin films

    Directory of Open Access Journals (Sweden)

    P. Jiménez-Cavero

    2017-02-01

    Full Text Available We report the fabrication of high crystal quality epitaxial thin films of maghemite (γ−Fe2O3, a classic ferrimagnetic insulating iron oxide. Spin Seebeck effect (SSE measurements in γ−Fe2O3/Pt bilayers as a function of sample preparation conditions and temperature yield a SSE coefficient of 0.5(1 μV/K at room temperature. Dependence on temperature allows us to estimate the magnon diffusion length in maghemite to be in the range of tens of nanometers, in good agreement with that of conducting iron oxide magnetite (Fe3O4, establishing the relevance of spin currents of magnonic origin in magnetic iron oxides.

  8. Tin-Assisted Synthesis of ɛ -Ga2O3 by Molecular Beam Epitaxy

    Science.gov (United States)

    Kracht, M.; Karg, A.; Schörmann, J.; Weinhold, M.; Zink, D.; Michel, F.; Rohnke, M.; Schowalter, M.; Gerken, B.; Rosenauer, A.; Klar, P. J.; Janek, J.; Eickhoff, M.

    2017-11-01

    The synthesis of ɛ -Ga2O3 and β -Ga2O3 by plasma-assisted molecular beam epitaxy on (001 )Al2O3 substrates is studied. The growth window of β -Ga2O3 in the Ga-rich regime, usually limited by the formation of volatile gallium suboxide, is expanded due to the presence of tin during the growth process, which stabilizes the formation of gallium oxides. X-ray diffraction, transmission electron microscopy, time-of-flight secondary-ion mass spectrometry, Raman spectroscopy, and atomic force microscopy are used to analyze the influence of tin on the layer formation. We demonstrate that it allows the synthesis of phase-pure ɛ -Ga2O3 . A growth model based on the oxidation of gallium suboxide by reduction of an intermediate sacrificial tin oxide is suggested.

  9. Expected utility without utility

    OpenAIRE

    Castagnoli, E.; Licalzi, M.

    1996-01-01

    This paper advances an interpretation of Von Neumann–Morgenstern’s expected utility model for preferences over lotteries which does not require the notion of a cardinal utility over prizes and can be phrased entirely in the language of probability. According to it, the expected utility of a lottery can be read as the probability that this lottery outperforms another given independent lottery. The implications of this interpretation for some topics and models in decision theory are considered....

  10. Oriented epitaxial TiO2 nanowires for water splitting

    Science.gov (United States)

    Hou, Wenting; Cortez, Pablo; Wuhrer, Richard; Macartney, Sam; Bozhilov, Krassimir N.; Liu, Rong; Sheppard, Leigh R.; Kisailus, David

    2017-06-01

    Highly oriented epitaxial rutile titanium dioxide (TiO2) nanowire arrays have been hydrothermally grown on polycrystalline TiO2 templates with their orientation dependent on the underlying TiO2 grain. Both the diameter and areal density of the nanowires were tuned by controlling the precursor concentration, and the template surface energy and roughness. Nanowire tip sharpness was influenced by precursor solubility and diffusivity. A new secondary ion mass spectrometer technique has been developed to install additional nucleation sites in single crystal TiO2 templates and the effect on nanowire growth was probed. Using the acquired TiO2 nanowire synthesis knowhow, an assortment of nanowire arrays were installed upon the surface of undoped TiO2 photo-electrodes and assessed for their photo-electrochemical water splitting performance. The key result obtained was that the presence of short and dispersed nanowire arrays significantly improved the photocurrent when the illumination intensity was increased from 100 to 200 mW cm-2. This is attributed to the alignment of the homoepitaxially grown nanowires to the [001] direction, which provides the fastest charge transport in TiO2 and an improved pathway for photo-holes to find water molecules and undertake oxidation. This result lays a foundation for achieving efficient water splitting under conditions of concentrated solar illumination.

  11. Epitaxy of advanced nanowire quantum devices

    Science.gov (United States)

    Gazibegovic, Sasa; Car, Diana; Zhang, Hao; Balk, Stijn C.; Logan, John A.; de Moor, Michiel W. A.; Cassidy, Maja C.; Schmits, Rudi; Xu, Di; Wang, Guanzhong; Krogstrup, Peter; Op Het Veld, Roy L. M.; Zuo, Kun; Vos, Yoram; Shen, Jie; Bouman, Daniël; Shojaei, Borzoyeh; Pennachio, Daniel; Lee, Joon Sue; van Veldhoven, Petrus J.; Koelling, Sebastian; Verheijen, Marcel A.; Kouwenhoven, Leo P.; Palmstrøm, Chris J.; Bakkers, Erik P. A. M.

    2017-08-01

    Semiconductor nanowires are ideal for realizing various low-dimensional quantum devices. In particular, topological phases of matter hosting non-Abelian quasiparticles (such as anyons) can emerge when a semiconductor nanowire with strong spin-orbit coupling is brought into contact with a superconductor. To exploit the potential of non-Abelian anyons—which are key elements of topological quantum computing—fully, they need to be exchanged in a well-controlled braiding operation. Essential hardware for braiding is a network of crystalline nanowires coupled to superconducting islands. Here we demonstrate a technique for generic bottom-up synthesis of complex quantum devices with a special focus on nanowire networks with a predefined number of superconducting islands. Structural analysis confirms the high crystalline quality of the nanowire junctions, as well as an epitaxial superconductor-semiconductor interface. Quantum transport measurements of nanowire ‘hashtags’ reveal Aharonov-Bohm and weak-antilocalization effects, indicating a phase-coherent system with strong spin-orbit coupling. In addition, a proximity-induced hard superconducting gap (with vanishing sub-gap conductance) is demonstrated in these hybrid superconductor-semiconductor nanowires, highlighting the successful materials development necessary for a first braiding experiment. Our approach opens up new avenues for the realization of epitaxial three-dimensional quantum architectures which have the potential to become key components of various quantum devices.

  12. Graphene nanoribbons epitaxy on boron nitride

    Energy Technology Data Exchange (ETDEWEB)

    Lu, Xiaobo; Wang, Shuopei; Wu, Shuang; Chen, Peng; Zhang, Jing; Zhao, Jing; Meng, Jianling; Xie, Guibai; Wang, Duoming; Wang, Guole; Zhang, Ting Ting; Yang, Rong; Shi, Dongxia [Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190 (China); Yang, Wei [Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190 (China); Laboratoire Pierre Aigrain, ENS-CNRS UMR 8551, Universités Pierre et Marie Curie and Paris-Diderot, 24 rue Lhomond, 75231 Paris Cedex 05 (France); Watanabe, Kenji; Taniguchi, Takashi [National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044 (Japan); Zhang, Guangyu, E-mail: gyzhang@aphy.iphy.ac.cn [Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190 (China); Collaborative Innovation Center of Quantum Matter, Beijing 100190 (China)

    2016-03-14

    In this letter, we report a pilot study on epitaxy of monolayer graphene nanoribbons (GNRs) on hexagonal boron nitride (h-BN). We found that GNRs grow preferentially from the atomic steps of h-BN, forming in-plane heterostructures. GNRs with well-defined widths ranging from ∼15 nm to ∼150 nm can be obtained reliably. As-grown GNRs on h-BN have high quality with a carrier mobility of ∼20 000 cm{sup 2} V{sup −1} s{sup −1} for ∼100-nm-wide GNRs at a temperature of 1.7 K. Besides, a moiré pattern induced quasi-one-dimensional superlattice with a periodicity of ∼15 nm for GNR/h-BN was also observed, indicating zero crystallographic twisting angle between GNRs and h-BN substrate. The superlattice induced band structure modification is confirmed by our transport results. These epitaxial GNRs/h-BN with clean surfaces/interfaces and tailored widths provide an ideal platform for high-performance GNR devices.

  13. High sensitive quasi freestanding epitaxial graphene gas sensor on 6H-SiC

    NARCIS (Netherlands)

    Iezhokin, I.; Offermans, P.; Brongersma, S.H.; Giesbers, A.J.M.; Flipse, C.F.J.

    2013-01-01

    We have measured the electrical response to NO2, N2, NH3, and CO for epitaxial graphene and quasi freestanding epitaxial graphene on 6H-SiC substrates. Quasi freestanding epitaxial graphene shows a 6 fold increase in NO2 sensitivity compared to epitaxial graphene. Both samples show a sensitivity

  14. Magnetic state controllable critical temperature in epitaxial Ho/Nb bilayers

    Directory of Open Access Journals (Sweden)

    Yuanzhou Gu

    2014-04-01

    Full Text Available We study the magnetic properties of Ho thin films with different crystallinity (either epitaxial or non-epitaxial and investigate their proximity effects with Nb thin films. Magnetic measurements show that epitaxial Ho has large anisotropy in two different crystal directions in contrast to non-epitaxial Ho. Transport measurements show that the superconducting transition temperature (Tc of Nb thin films can be significantly suppressed at zero field by epitaxial Ho compared with non-epitaxial Ho. We also demonstrate a direct control over Tc by changing the magnetic states of the epitaxial Ho layer, and attribute the strong proximity effects to exchange interaction.

  15. Nanostructured Thermoelectric Oxides for Energy Harvesting Applications

    KAUST Repository

    Abutaha, Anas I.

    2015-11-24

    As the world strives to adapt to the increasing demand for electrical power, sustainable energy sources are attracting significant interest. Around 60% of energy utilized in the world is wasted as heat. Different industrial processes, home heating, and exhausts in cars, all generate a huge amount of unused waste heat. With such a huge potential, there is also significant interest in discovering inexpensive technologies for power generation from waste heat. As a result, thermoelectric materials have become important for many renewable energy research programs. While significant advancements have been done in improving the thermoelectric properties of the conventional heavy-element based materials (such as Bi2Te3 and PbTe), high-temperature applications of thermoelectrics are still limited to one materials system, namely SiGe, since the traditional thermoelectric materials degrade and oxidize at high temperature. Therefore, oxide thermoelectrics emerge as a promising class of materials since they can operate athigher temperatures and in harsher environments compared to non-oxide thermoelectrics. Furthermore, oxides are abundant and friendly to the environment. Among oxides, crystalline SrTiO3 and ZnO are promising thermoelectric materials. The main objective of this work is therefore to pursue focused investigations of SrTiO3 and ZnO thin films and superlattices grown by pulsed laser deposition (PLD), with the goal of optimizing their thermoelectric properties by following different strategies. First, the effect of laser fluence on the thermoelectric properties of La doped epitaxial SrTiO3 films is discussed. Films grown at higher laser fluences exhibit better thermoelectric performance. Second, the role of crystal orientation in determining the thermoelectric properties of epitaxial Al doped ZnO (AZO) films is explained. Vertically aligned (c-axis) AZO films have superior thermoelectric properties compared to other films with different crystal orientations. Third

  16. Oxygen engineering of HfO{sub 2-x} thin films grown by reactive molecular beam epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Hildebrandt, Erwin; Kurian, Jose; Alff, Lambert [Institut fuer Materialwissenschaft, TU-Darmstadt (Germany); Zaumseil, Peter; Schroeder, Thomas [IHP, Frankfurt, Oder (Germany)

    2010-07-01

    Reactive molecular beam epitaxy (R-MBE) is an ideal tool for tailoring physical properties of thin films to specific needs. For the development of cutting-edge oxides for thin film applications a precise control of oxygen defects is crucial. R-MBE in combination with rf-activated oxygen allows reproducibly growing oxide thin films with precise oxidation conditions enabling oxygen engineering. R-MBE was used to grow Hf and HfO{sub 2{+-}}{sub x} thin films with different oxidation conditions on sapphire single crystal substrates. Structural characterization was carried out using rotating anode x-ray diffraction revealing highly textured to epitaxial thin films on c-cut sapphire. Furthermore, switching of film orientation by varying the oxidation conditions was observed demonstrating the role of oxygen in the growth procedure. The investigation of electrical properties using a four probe measurement setup showed conductivities in the range of 1000 {mu}{omega}cm for oxygen deficient HfO{sub 2-x} thin films. Optical properties were investigated using a photospectrometer and additionally x-ray photoelectron spectroscopy was carried out to study the band gap and valence states. Both techniques were used to monitor the oxygen content in deficient HfO{sub 2-x} thin films. Our results demonstrate the importance of oxygen engineering even in the case of 'simple' oxides.

  17. Epitaxially grown strained pentacene thin film on graphene membrane.

    Science.gov (United States)

    Kim, Kwanpyo; Santos, Elton J G; Lee, Tae Hoon; Nishi, Yoshio; Bao, Zhenan

    2015-05-06

    Organic-graphene system has emerged as a new platform for various applications such as flexible organic photovoltaics and organic light emitting diodes. Due to its important implication in charge transport, the study and reliable control of molecular packing structures at the graphene-molecule interface are of great importance for successful incorporation of graphene in related organic devices. Here, an ideal membrane of suspended graphene as a molecular assembly template is utilized to investigate thin-film epitaxial behaviors. Using transmission electron microscopy, two distinct molecular packing structures of pentacene on graphene are found. One observed packing structure is similar to the well-known bulk-phase, which adapts a face-on molecular orientation on graphene substrate. On the other hand, a rare polymorph of pentacene crystal, which shows significant strain along the c-axis, is identified. In particular, the strained film exhibits a specific molecular orientation and a strong azimuthal correlation with underlying graphene. Through ab initio electronic structure calculations, including van der Waals interactions, the unusual polymorph is attributed to the strong graphene-pentacene interaction. The observed strained organic film growth on graphene demonstrates the possibility to tune molecular packing via graphene-molecule interactions. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  18. Self-assembled epitaxial NiSi2 nanowires on Si(001) by reactive deposition epitaxy

    International Nuclear Information System (INIS)

    Chen, S.Y.; Chen, L.J.

    2006-01-01

    Self-assembled epitaxial NiSi 2 nanowires have been fabricated on Si(001) by reactive deposition epitaxy (RDE). The RDE method promoted nanowire growth since it provides deposited atoms sufficient kinetic energy for movement on the Si surface during the growth of silicide islands. The twin-related interface between NiSi 2 and Si is directly related to the nanowire formation since it breaks the symmetry of the surface and leads to the asymmetric growth. The temperature of RDE was found to greatly influence the formation of nanowires. By RDE at 750 deg. C, a high density of NiSi 2 nanowires was formed with an average aspect ratio of 30

  19. Point defect balance in epitaxial GaSb

    International Nuclear Information System (INIS)

    Segercrantz, N.; Slotte, J.; Makkonen, I.; Kujala, J.; Tuomisto, F.; Song, Y.; Wang, S.

    2014-01-01

    Positron annihilation spectroscopy in both conventional and coincidence Doppler broadening mode is used for studying the effect of growth conditions on the point defect balance in GaSb:Bi epitaxial layers grown by molecular beam epitaxy. Positron annihilation characteristics in GaSb are also calculated using density functional theory and compared to experimental results. We conclude that while the main positron trapping defect in bulk samples is the Ga antisite, the Ga vacancy is the most prominent trap in the samples grown by molecular beam epitaxy. The results suggest that the p–type conductivity is caused by different defects in GaSb grown with different methods.

  20. Position-controlled epitaxial III-V nanowires on silicon

    Energy Technology Data Exchange (ETDEWEB)

    Roest, Aarnoud L; Verheijen, Marcel A; Wunnicke, Olaf; Serafin, Stacey; Wondergem, Harry; Bakkers, Erik P A M [Philips Research Laboratories, Professor Holstlaan 4, 5656 AA Eindhoven (Netherlands); Kavli Institute of NanoScience, Delft University of Technology, PO Box 5046, 2600 GA Delft (Netherlands)

    2006-06-14

    We show the epitaxial integration of III-V semiconductor nanowires with silicon technology. The wires are grown by the VLS mechanism with laser ablation as well as metal-organic vapour phase epitaxy. The hetero-epitaxial growth of the III-V nanowires on silicon was confirmed with x-ray diffraction pole figures and cross-sectional transmission electron microscopy. We show preliminary results of two-terminal electrical measurements of III-V nanowires grown on silicon. E-beam lithography was used to predefine the position of the nanowires.

  1. Position-controlled epitaxial III-V nanowires on silicon

    International Nuclear Information System (INIS)

    Roest, Aarnoud L; Verheijen, Marcel A; Wunnicke, Olaf; Serafin, Stacey; Wondergem, Harry; Bakkers, Erik P A M

    2006-01-01

    We show the epitaxial integration of III-V semiconductor nanowires with silicon technology. The wires are grown by the VLS mechanism with laser ablation as well as metal-organic vapour phase epitaxy. The hetero-epitaxial growth of the III-V nanowires on silicon was confirmed with x-ray diffraction pole figures and cross-sectional transmission electron microscopy. We show preliminary results of two-terminal electrical measurements of III-V nanowires grown on silicon. E-beam lithography was used to predefine the position of the nanowires

  2. One-step Ge/Si epitaxial growth.

    Science.gov (United States)

    Wu, Hung-Chi; Lin, Bi-Hsuan; Chen, Huang-Chin; Chen, Po-Chin; Sheu, Hwo-Shuenn; Lin, I-Nan; Chiu, Hsin-Tien; Lee, Chi-Young

    2011-07-01

    Fabricating a low-cost virtual germanium (Ge) template by epitaxial growth of Ge films on silicon wafer with a Ge(x)Si(1-x) (0 deposition method in one step by decomposing a hazardousless GeO(2) powder under hydrogen atmosphere without ultra-high vacuum condition and then depositing in a low-temperature region. X-ray diffraction analysis shows that the Ge film with an epitaxial relationship is along the in-plane direction of Si. The successful growth of epitaxial Ge films on Si substrate demonstrates the feasibility of integrating various functional devices on the Ge/Si substrates.

  3. Droplet Epitaxy Image Contrast in Mirror Electron Microscopy

    Science.gov (United States)

    Kennedy, S. M.; Zheng, C. X.; Jesson, D. E.

    2017-01-01

    Image simulation methods are applied to interpret mirror electron microscopy (MEM) images obtained from a movie of GaAs droplet epitaxy. Cylindrical symmetry of structures grown by droplet epitaxy is assumed in the simulations which reproduce the main features of the experimental MEM image contrast, demonstrating that droplet epitaxy can be studied in real-time. It is therefore confirmed that an inner ring forms at the droplet contact line and an outer ring (or skirt) occurs outside the droplet periphery. We believe that MEM combined with image simulations will be increasingly used to study the formation and growth of quantum structures.

  4. Organometallic vapor-phase epitaxy theory and practice

    CERN Document Server

    Stringfellow, Gerald B

    1989-01-01

    Here is one of the first single-author treatments of organometallic vapor-phase epitaxy (OMVPE)--a leading technique for the fabrication of semiconductor materials and devices. Also included are metal-organic molecular-beam epitaxy (MOMBE) and chemical-beam epitaxy (CBE) ultra-high-vacuum deposition techniques using organometallic source molecules. Of interest to researchers, students, and people in the semiconductor industry, this book provides a basic foundation for understanding the technique and the application of OMVPE for the growth of both III-V and II-VI semiconductor materials and the

  5. General Top-Down Ion Exchange Process for the Growth of Epitaxial Chalcogenide Thin Films and Devices

    KAUST Repository

    Xia, Chuan

    2016-12-30

    We demonstrate a versatile top-down ion exchange process, done at ambient temperature, to form epitaxial chalcogenide films and devices, with nanometer scale thickness control. To demonstrate the versatility of our process we have synthesized (1) epitaxial chalcogenide metallic and semiconducting films and (2) free-standing chalcogenide films and (3) completed in situ formation of atomically sharp heterojunctions by selective ion exchange. Epitaxial NiCo2S4 thin films prepared by our process show 115 times higher mobility than NiCo2S4 pellets (23 vs 0.2 cm(2) V-1 s(-1)) prepared by previous reports. By controlling the ion exchange process time, we made free-standing epitaxial films of NiCo2S4 and transferred them onto different substrates. We also demonstrate in situ formation of atomically sharp, lateral Schottky diodes based on NiCo2O4/NiCo2S4 heterojunction, using a single ion exchange step. Additionally, we show that our approach can be easily extended to other chalcogenide semiconductors. Specifically, we used our process to prepare Cu1.8S thin films with mobility that matches single crystal Cu1.8S (25 cm(2) V-1 s(-1)), which is ca. 28 times higher than the previously reported Cu1.8S thin film mobility (0.58 cm(2) V-1 s(-1)), thus demonstrating the universal nature of our process. This is the first report in which chalcogenide thin films retain the epitaxial nature of the precursor oxide films, an approach that will be useful in many applications.

  6. Formation of Monocrystalline 1D and 2D Architectures via Epitaxial Attachment: Bottom-Up Routes through Surfactant-Mediated Arrays of Oriented Nanocrystals.

    Science.gov (United States)

    Nakagawa, Yoshitaka; Kageyama, Hiroyuki; Oaki, Yuya; Imai, Hiroaki

    2015-06-09

    Monocrystalline architectures with well-defined shapes were achieved by bottom-up routes through epitaxial attachment of Mn3O4 nanocrystals. The crystallographically continuous 1D chains elongated in the a axis and 2D panels having large a or c faces were obtained by removal of the organic mediator from surfactant-mediated 1D and 2D arrays of Mn3O4 nanocrystals, respectively. Our basal approach indicates that the epitaxial attachment through the surfactant-mediated arrays is utilized for fabrication of a wide variety of micrometric architectures from nanometric crystalline units.

  7. Layer-by-Layer Epitaxial Growth of Defect-Engineered Strontium Cobaltites

    Energy Technology Data Exchange (ETDEWEB)

    Andersen, Tassie K. [Materials Science; Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208, United States; Cook, Seyoung [Materials Science; Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208, United States; Wan, Gang [Materials Science; Hong, Hawoong [Advanced Photon Source, Argonne National Laboratory, Argonne, Illinois 60439, United States; Marks, Laurence D. [Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208, United States; Fong, Dillon D. [Materials Science

    2018-01-31

    Control over structure and composition of (ABO(3)) perovskite oxides offers exciting opportunities since these materials possess unique, tunable properties. Perovskite oxides with cobalt B-site cations are particularly promising, as the range of the cations stable oxidation states leads to many possible structural frameworks. Here, we report growth of strontium cobalt oxide thin films by molecular beam epitaxy, and conditions necessary to stabilize different defect concentration phases. In situ X-ray scattering is used to monitor structural evolution during growth, while in situ X-ray absorption near-edge spectroscopy is used to probe oxidation state and measure changes to oxygen vacancy concentration as a function of film thickness. Experimental results are compared to kinetically limited thermodynamic predictions, in particular, solute trapping, with semiquantitative agreement. Agreement between observations of dependence of cobaltite phase on oxidation activity and deposition rate, and predictions indicates that a combined experimental/theoretical approach is key to understanding phase behavior in the strontium cobalt oxide system.

  8. Characterization and Utilization of Calcium Oxide (CaO) Thermally Decomposed from Fish Bones as a Catalyst in the Production of Biodiesel from Waste Cooking Oil

    OpenAIRE

    Aldes Lesbani; Sabat Okta Ceria Sitompul; Risfidian Mohadi; Nurlisa Hidayati

    2016-01-01

    Thermal decomposition of fish bones to obtain calcium oxide (CaO) was conducted at various temperatures of 400, 500, 800, 900, 1000, and 1100 °C. The calcium oxide was then characterized using X-ray diffractometer, FTIR spectrophotometer, and SEM analysis. The calcium oxide obtained from the decomposition at 1000 °C was then used as a catalyst in the production of biodiesel from waste cooking oil. Diffraction pattern of the calcium oxide produced from decomposition at 1000...

  9. Reduced defect densities in the ZnO epilayer grown on Si substrates by laser-assisted molecular-beam epitaxy using a ZnS epitaxial buffer layer

    International Nuclear Information System (INIS)

    Onuma, T.; Chichibu, S.F.; Uedono, A.; Yoo, Y.-Z.; Chikyow, T.; Sota, T.; Kawasaki, M.; Koinuma, H.

    2004-01-01

    Nonradiative photoluminescence (PL) lifetime (τ nr ) and point defect density in the (0001) ZnO epilayer grown on (111) Si substrates by laser-assisted molecular-beam epitaxy (L-MBE) using a (0001) ZnS epitaxial buffer layer were compared with those in the ZnO films on (111) and (001) Si substrates prepared by direct transformation of ZnS epilayers on Si by thermal oxidation [Yoo et al., Appl. Phys. Lett. 78, 616 (2001)]. Both the ZnO films exhibited excitonic reflectance anomalies and corresponding PL peaks at low temperature, and the density or size of vacancy-type point defects (Zn vacancies), which were measured by the monoenergetic positron annihilation measurement, in the L-MBE epilayer was lower than that in the films prepared by the oxidation transformation. The ZnO epilayer grown on a (0001) ZnS epitaxial buffer on (111) Si exhibited longer τ nr of 105 ps at room temperature

  10. Stoichiometry control of complex oxides by sequential pulsed-laser deposition from binary-oxide targets

    Energy Technology Data Exchange (ETDEWEB)

    Herklotz, A. [ORNL, Materials Science and Technology Division, Bethel Valley Road, Oak Ridge, Tennessee 37831-6056 (United States); Martin Luther University Halle-Wittenberg, Institute for Physics, Von-Danckelmann-Platz 3, 06120 Halle (Germany); Dörr, K. [Martin Luther University Halle-Wittenberg, Institute for Physics, Von-Danckelmann-Platz 3, 06120 Halle (Germany); Ward, T. Z.; Eres, G. [ORNL, Materials Science and Technology Division, Bethel Valley Road, Oak Ridge, Tennessee 37831-6056 (United States); Christen, H. M.; Biegalski, M. D. [ORNL, Center for Nanophase Materials Sciences, Bethel Valley Road, Oak Ridge, Tennessee 37831-6496 (United States)

    2015-03-30

    To have precise atomic layer control over interfaces, we examine the growth of complex oxides through the sequential deposition from binary targets by pulsed laser deposition. In situ reflection high-energy electron diffraction (RHEED) is used to control the growth and achieve films with excellent structural quality. The growth from binary oxide targets is fundamentally different from single target growth modes and shows more similarities to shuttered growth by molecular beam epitaxy. The RHEED intensity oscillations of non-stoichiometric growth are consistent with a model of island growth and accumulation of excess material on the surface that can be utilized to determine the correct stoichiometry for growth. Correct monolayer doses can be determined through an envelope frequency in the RHEED intensity oscillations. In order to demonstrate the ability of this growth technique to create complex heterostructures, the artificial n = 2 and 3 Sr{sub n+1}Ti{sub n}O{sub 3n+1} Ruddlesden-Popper phases are grown with good long-range order. This method enables the precise unit-cell level control over the structure of perovskite-type oxides, and thus the growth of complex materials with improved structural quality and electronic functionality.

  11. Magnetic properties of novel epitaxial films

    International Nuclear Information System (INIS)

    Bader, S.D.; Moog, E.R.

    1986-09-01

    The surface magneto-optic Kerr effect (SMOKE) is used to explore the magnetism of ultra-thin Fe Films extending into the monolayer regime. Both bcc α-Fe and fcc γ-Fe single-crystalline, multilayer films are prepared on the bulk-terminated (1 x 1) structures of Au(100) and Cu(100), respectively. The characterizations of epitaxy and growth mode are performed using low energy electron diffraction and Auger electron spectroscopy. Monolayer-range Fe/Au(100) is ferromagnetic with a lower Curie temperature than bulk α-Fe. The controversial γ-Fe/Cu(100) system exhibits a striking, metastable, surface magnetic phase at temperatures above room temperature, but does not exhibit bulk ferromagnetism

  12. Shaping metal nanocrystals through epitaxial seeded growth

    Energy Technology Data Exchange (ETDEWEB)

    Habas, Susan E.; Lee, Hyunjoo; Radmilovic, Velimir; Somorjai,Gabor A.; Yang, Peidong

    2008-02-17

    Morphological control of nanocrystals has becomeincreasingly important, as many of their physical and chemical propertiesare highly shape-dependent. Nanocrystal shape control for both single andmultiple material systems, however, remains fairly empirical andchallenging. New methods need to be explored for the rational syntheticdesign of heterostructures with controlled morphology. Overgrowth of adifferent material on well-faceted seeds, for example, allows for the useof the defined seed morphology to control nucleation and growth of thesecondary structure. Here, we have used highly faceted cubic Pt seeds todirect the epitaxial overgrowth of a secondary metal. We demonstrate thisconcept with lattice matched Pd to produce conformal shape-controlledcore-shell particles, and then extend it to lattice mismatched Au to giveanisotropic growth. Seeding with faceted nanocrystals may havesignificant potential towards the development of shape-controlledheterostructures with defined interfaces.

  13. Epitaxial growth by monolayer restricted galvanic displacement

    Directory of Open Access Journals (Sweden)

    Vasilić Rastko

    2012-01-01

    Full Text Available The development of a new method for epitaxial growth of metals in solution by galvanic displacement of layers pre-deposited by underpotential deposition (UPD was discussed and experimentally illustrated throughout the lecture. Cyclic voltammetry (CV and scanning tunneling microscopy (STM are employed to carry out and monitor a “quasi-perfect”, two-dimensional growth of Ag on Au(111, Cu on Ag(111, and Cu on Au(111 by repetitive galvanic displacement of underpotentially deposited monolayers. A comparative study emphasizes the displacement stoichiometry as an efficient tool for thickness control during the deposition process and as a key parameter that affects the deposit morphology. The excellent quality of layers deposited by monolayer-restricted galvanic displacement is manifested by a steady UPD voltammetry and ascertained by a flat and uniform surface morphology maintained during the entire growth process.

  14. Selenium implantation in epitaxial gallium arsenide layers

    International Nuclear Information System (INIS)

    Inada, T.; Tokunaga, K.; Taka, S.; Yuge, Y.; Kohzu, H.

    1981-01-01

    Selenium implantation at room temperature in S-doped epitaxial GaAs layers as a means of the formation of n + layers has been investigated. Doping profiles for Se-implanted layers have been examined by a C-V technique and/or a differential Hall effect method. It has been shown that n + layers with a maximum carrier concentration of approx. equal to1.5 x 10 18 cm -3 can be formed by implantation followed by a 15 min annealing at 950 0 C. Contact resistance of ohmic electrodes is reduced by use of the Se-implanted n + layers, resulting in the improvement on GaAs FET performance. Measured minimum noise figure of the Se-implanted GaAs FETs is 0.74 dB at 4 GHz. (orig.)

  15. Fluorine incorporation during Si solid phase epitaxy

    International Nuclear Information System (INIS)

    Impellizzeri, G.; Mirabella, S.; Romano, L.; Napolitani, E.; Carnera, A.; Grimaldi, M.G.; Priolo, F.

    2006-01-01

    We have investigated the F incorporation and segregation in preamorphized Si during solid phase epitaxy (SPE) at different temperatures and for several implanted-F energies and fluences. The Si samples were amorphized to a depth of 550 nm by implanting Si at liquid nitrogen temperature and then enriched with F at different energies (65-150 keV) and fluences (0.07-5 x 10 14 F/cm 2 ). Subsequently, the samples were regrown by SPE at different temperatures: 580, 700 and 800 deg. C. We have found that the amount of F incorporated after SPE strongly depends on the SPE temperature and on the energy and fluence of the implanted-F, opening the possibility to tailor the F profile during SPE

  16. Strain quantification in epitaxial thin films

    International Nuclear Information System (INIS)

    Cushley, M

    2008-01-01

    Strain arising in epitaxial thin films can be beneficial in some cases but devastating in others. By altering the lattice parameters, strain may give a thin film properties hitherto unseen in the bulk material. On the other hand, heavily strained systems are prone to develop lattice defects in order to relieve the strain, which can cause device failure or, at least, a decrease in functionality. Using convergent beam electron diffraction (CBED) and high-resolution transmission electron microscopy (HRTEM), it is possible to determine local strains within a material. By comparing the results from CBED and HRTEM experiments, it is possible to gain a complete view of a material, including the strain and any lattice defects present. As well as looking at how the two experimental techniques differ from each other, I will also look at how results from different image analysis algorithms compare. Strain in Si/SiGe samples and BST/SRO/MgO capacitor structures will be discussed.

  17. Optical characterization of epitaxial semiconductor layers

    CERN Document Server

    Richter, Wolfgang

    1996-01-01

    The last decade has witnessed an explosive development in the growth of expitaxial layers and structures with atomic-scale dimensions. This progress has created new demands for the characterization of those stuctures. Various methods have been refined and new ones developed with the main emphasis on non-destructive in-situ characterization. Among those, methods which rely on the interaction of electromagnetic radiation with matter are particularly valuable. In this book standard methods such as far-infrared spectroscopy, ellipsometry, Raman scattering, and high-resolution X-ray diffraction are presented, as well as new advanced techniques which provide the potential for better in-situ characterization of epitaxial structures (such as reflection anistropy spectroscopy, infrared reflection-absorption spectroscopy, second-harmonic generation, and others). This volume is intended for researchers working at universities or in industry, as well as for graduate students who are interested in the characterization of ...

  18. Reversible Polarization Rotation in Epitaxial Ferroelectric Bilayers

    DEFF Research Database (Denmark)

    Liu, Guangqing; Zhang, Qi; Huang, Hsin-Hui

    2016-01-01

    Polarization rotation engineering is a promising path to giant dielectric and electromechanical responses in ferroelectric materials and devices. This work demonstrates robust and reversible in- to out-of-plane polarization rotation in ultrathin (nanoscale) epitaxial (001) tetragonal PbZr0.3Ti0.7O3...... large-scale polarization rotation switching (≈60 μC cm−2) and an effective d 33 response 500% (≈250 pm V−1) larger than the PZT-R layer alone. Furthermore, this enhancement is stable for more than 107 electrical switching cycles. These bilayers present a simple and highly controllable means to design...... and optimize rotational polar systems as an alternate to traditional composition-based approaches. The precise control of the subtle interface-driven interactions between the lattice and the external factors that control polarization opens a new door to enhanced—or completely new—functional properties....

  19. Influence of metallic surface states on electron affinity of epitaxial AlN films

    Energy Technology Data Exchange (ETDEWEB)

    Mishra, Monu; Krishna, Shibin; Aggarwal, Neha [Advanced Materials and Devices Division, CSIR-National Physical Laboratory, Dr. K.S. Krishnan Marg, New Delhi110012 (India); Academy of Scientific and Innovative Research (AcSIR), CSIR-NPL Campus, Dr. K.S. Krishnan Marg, New Delhi 110012 (India); Gupta, Govind, E-mail: govind@nplindia.org [Advanced Materials and Devices Division, CSIR-National Physical Laboratory, Dr. K.S. Krishnan Marg, New Delhi110012 (India); Academy of Scientific and Innovative Research (AcSIR), CSIR-NPL Campus, Dr. K.S. Krishnan Marg, New Delhi 110012 (India)

    2017-06-15

    The present article investigates surface metallic states induced alteration in the electron affinity of epitaxial AlN films. AlN films grown by plasma-assisted molecular beam epitaxy system with (30% and 16%) and without metallic aluminium on the surface were probed via photoemission spectroscopic measurements. An in-depth analysis exploring the influence of metallic aluminium and native oxide on the electronic structure of the films is performed. It was observed that the metallic states pinned the Fermi Level (FL) near valence band edge and lead to the reduction of electron affinity (EA). These metallic states initiated charge transfer and induced changes in surface and interface dipoles strength. Therefore, the EA of the films varied between 0.6–1.0 eV due to the variation in contribution of metallic states and native oxide. However, the surface barrier height (SBH) increased (4.2–3.5 eV) adversely due to the availability of donor-like surface states in metallic aluminium rich films.

  20. Ab initio calculation of band alignment of epitaxial La2O3 on Si(111 substrate

    Directory of Open Access Journals (Sweden)

    Alberto Debernardi

    2015-08-01

    Full Text Available By means of plane wave pseudopotential method we have studied the electronic properties of the heterostructure formed by an high dielectric constant (k oxide, the hexagonal La2O3 epitaxially grown with (0001-orientation on Si (111 substrate. We found that for La2O3 both the dielectric constant along the growth direction and the band gap are larger in the epitaxial film than in the bulk. By super-cell techniques we have computed the band alignment of the junction finding a valence band offset and a conduction band offset of ~1.6 eV and ~1.7 eV respectively. We demonstrate that the band alignment can be engineered by δ-doping the interface: our simulations show that, by doping the interface with S or Se monolayer, the valence (conduction band offset increases (decreases of about 0.5 eV without the formation of spurious electronic states in the semiconductor band-gap. The simulation of the critical thickness of pseudomorphic Lanthana film complete the work. Our results are relevant for the realization of a new generation of devices based on ultra-scaled complementary metal oxides semiconductors (CMOS technology.

  1. Increasing the radiation resistance of single-crystal silicon epitaxial layers

    Directory of Open Access Journals (Sweden)

    Kurmashev Sh. D.

    2014-12-01

    Full Text Available The authors investigate the possibility of increasing the radiation resistance of silicon epitaxial layers by creating radiation defects sinks in the form of dislocation networks of the density of 109—1012 m–2. Such networks are created before the epitaxial layer is applied on the front surface of the silicon substrate by its preliminary oxidation and subsequent etching of the oxide layer. The substrates were silicon wafers KEF-4.5 and KDB-10 with a diameter of about 40 mm, grown by the Czochralski method. Irradiation of the samples was carried out using electron linear accelerator "Electronics" (ЭЛУ-4. Energy of the particles was 2,3—3,0 MeV, radiation dose 1015—1020 m–2, electron beam current 2 mA/m2. It is shown that in structures containing dislocation networks, irradiation results in reduction of the reverse currents by 5—8 times and of the density of defects by 5—10 times, while the mobility of the charge carriers is increased by 1,2 times. Wafer yield for operation under radiation exposure, when the semiconductor structures are formed in the optimal mode, is increased by 7—10% compared to the structures without dislocation networks. The results obtained can be used in manufacturing technology for radiation-resistant integrated circuits (bipolar, CMOS, BiCMOS, etc..

  2. Preparation and characterization of epitaxially grown unsupported yttria-stabilized zirconia (YSZ) thin films

    Energy Technology Data Exchange (ETDEWEB)

    Götsch, Thomas; Mayr, Lukas [Institute of Physical Chemistry, Universität Innsbruck, A-6020 Innsbruck (Austria); Stöger-Pollach, Michael [University Service Center for Transmission Electron Microscopy (USTEM), Vienna University of Technology, A-1040 Vienna (Austria); Klötzer, Bernhard [Institute of Physical Chemistry, Universität Innsbruck, A-6020 Innsbruck (Austria); Penner, Simon, E-mail: simon.penner@uibk.ac.at [Institute of Physical Chemistry, Universität Innsbruck, A-6020 Innsbruck (Austria)

    2015-03-15

    Highlights: • Preparation of unsupported yttrium-stabilized zirconia films. • Control of ordering and epitaxy by temperature of deposition template. • Adjustment of film defectivity by deposition and post-oxidation temperature. • Reproducibility of target stoichiometry in the deposited films. • Lateral and vertical chemical homogeneity. - Abstract: Epitaxially grown, chemically homogeneous yttria-stabilized zirconia thin films (“YSZ”, 8 mol% Y{sub 2}O{sub 3}) are prepared by direct-current sputtering onto a single-crystalline NaCl(0 0 1) template at substrate temperatures ≥493 K, resulting in unsupported YSZ films after floating off NaCl in water. A combined methodological approach by dedicated (surface science) analytical characterization tools (transmission electron microscopy and diffraction, atomic force microscopy, angle-resolved X-ray photoelectron spectroscopy) reveals that the film grows mainly in a [0 0 1] zone axis and no Y-enrichment in surface or bulk regions takes place. In fact, the Y-content of the sputter target is preserved in the thin films. Analysis of the plasmon region in EEL spectra indicates a defective nature of the as-deposited films, which can be suppressed by post-deposition oxidation at 1073 K. This, however, induces considerable sintering, as deduced from surface morphology measurements by AFM. In due course, the so-prepared unsupported YSZ films might act as well-defined model systems also for technological applications.

  3. Formation of epitaxial Al 2O 3/NiAl(1 1 0) films: aluminium deposition

    Science.gov (United States)

    Lykhach, Y.; Moroz, V.; Yoshitake, M.

    2005-02-01

    Structure of epitaxial Al 2O 3 layers formed on NiAl(1 1 0) substrates has been studied by means of reflection high-energy electron diffraction (RHEED). The elucidated structure was compared to the model suggested for 0.5 nm-thick Al 2O 3 layers [K. Müller, H. Lindner, D.M. Zehner, G. Ownby, Verh. Dtsch. Phys. Ges. 25 (1990) 1130; R.M. Jaeger, H. Kuhlenbeck, H.J. Freund, Surf. Sci. 259 (1991) 235]. The stepwise growth of Al 2O 3 film, involving deposition and subsequent oxidation of aluminium onto epitaxial 0.5 nm-thick Al 2O 3 layers, has been investigated. Aluminium was deposited at room temperature, whereas its oxidation took place during annealing at 1070 K. The Al 2O 3 thickness was monitored by means of Auger electron spectroscopy (AES). It was found that Al 2O 3 layer follows the structure of 0.5 nm thick Al 2O 3 film, although a tilting of Al 2O 3(1 1 1) surface plane with respect to NiAl(1 1 0) surface appeared after Al deposition.

  4. Twenty years of molecular beam epitaxy

    Science.gov (United States)

    Cho, A. Y.

    1995-05-01

    The term "molecular beam epitaxy" (MBE) was first used in one of our crystal growth papers in 1970, after having conducted extensive surface physics studies in the late 1960's of the interaction of atomic and molecular beams with solid surfaces. The unique feature of MBE is the ability to prepare single crystal layers with atomic dimensional precision. MBE sets the standard for epitaxial growth and has made possible semiconductor structures that could not be fabricated with either naturally existing materials or by other crystal growth techniques. MBE led the crystal growth technologies when it prepared the first semiconductor quantum well and superlattice structures that gave unexpected and exciting electrical and optical properties. For example, the discovery of the fractional quantized Hall effect. It brought experimental quantum physics to the classroom, and practically all major universities throughout the world are now equipped with MBE systems. The fundamental principles demonstrated by the MBE growth of III-V compound semiconductors have also been applied to the growth of group IV, II-VI, metal, and insulating materials. For manufacturing, the most important criteria are uniformity, precise control of the device structure, and reproducibility. MBE has produced more lasers (3 to 5 million per month for compact disc application) than any other crystal growth technique in the world. New directions for MBE are to incorporate in-situ, real-time monitoring capabilities so that complex structures can be precisely "engineered". In the future, as environmental concerns increase, the use of toxic arsine and phosphine may be limited. Successful use of valved cracker cells for solid arsenic and phosphorus has already produced InP based injection lasers.

  5. Fabrication of GaN epitaxial thin film on InGaZnO4 single-crystalline buffer layer

    International Nuclear Information System (INIS)

    Shinozaki, Tomomasa; Nomura, Kenji; Katase, Takayoshi; Kamiya, Toshio; Hirano, Masahiro; Hosono, Hideo

    2010-01-01

    Epitaxial (0001) films of GaN were grown on (111) YSZ substrates using single-crystalline InGaZnO 4 (sc-IGZO) lattice-matched buffer layers by molecular beam epitaxy with a NH 3 source. The epitaxial relationships are (0001) GaN //(0001) IGZO //(111) YSZ in out-of-plane and [112-bar 0] GaN //[112-bar 0] IGZO //[11-bar 0] YSZ in in-plane. This is different from those reported for GaN on many oxide crystals; the in-plane orientation of GaN crystal lattice is rotated by 30 o with respect to those of oxide substrates except for ZnO. Although these GaN films showed relatively large tilting and twisting angles, which would be due to the reaction between GaN and IGZO, the GaN films grown on the sc-IGZO buffer layers exhibited stronger band-edge photoluminescence than GaN grown on a low-temperature GaN buffer layer.

  6. Synthesis of Si epitaxial layers from technical silicon by liquid-phase epitaxy method

    International Nuclear Information System (INIS)

    Ibragimov, Sh.I.; Saidov, A.S.; Sapaev, B.; Horvat, M.A.

    2004-01-01

    Full text: For today silicon is one of the most suitable materials because it is investigated, cheap and several its parameters are even just as good as those of connections A III B V . Disintegration of the USSR has led to the must difficult position of the industry of silicon instrument manufacture because of all industry of semiconductor silicon manufacture had generally concentrated in Ukraine. The importance of semiconductor silicon is rather great, because of, in opinion of expects, the nearest decade this material will dominate over not only on microelectronics but also in the majority of basic researches. Research of obtain of semiconductor silicon, power electronics and solar conversion, is topical interest of the science. In the work research of technological conditions of obtain and measurement of parameters of epitaxial layers obtained from technical silicon + stannum is resulted. Growth of silicon epitaxial layer with suitable parameters on thickness, cleanliness uniformity and structural perfection depends on the correct choice of condition of the growth and temperature. It is shown that in this case the growth occurring without preliminary clearing of materials (mix materials and substrates) at crystallization of epitaxial layer from technical silicon is accompanied by clearing of silicon film from majority of impurities order-of-magnitude. As starting raw material technical silicon of mark Kr.3 has been taken. By means of X-ray microanalyzer 'Jeol' JSM 5910 LV - Japan the quantitative analysis from the different points has been and from the different sides and from different points has been carried out. After corresponding chemical and mechanical processing the quantitative analysis of layer on chip has been carried out. Results of the quantitative analysis are shown. More effective clearing occurs that of the impurity atoms such as Al, P, Ca, Ti and Fe. The obtained material (epitaxial layer) has the parameters: specific resistance ρ∼0.1-4.0

  7. Epitaxial Growth and Cracking Mechanisms of Thermally Sprayed Ceramic Splats

    Science.gov (United States)

    Chen, Lin; Yang, Guan-jun

    2018-02-01

    In the present study, the epitaxial growth and cracking mechanisms of thermally sprayed ceramic splats were explored. We report, for the first time, the epitaxial growth of various splat/substrate combinations at low substrate temperatures (100 °C) and large lattice mismatch (- 11.26%). Our results suggest that thermal spray deposition was essentially a liquid-phase epitaxy, readily forming chemical bonding. The interface temperature was also estimated. The results convincingly demonstrated that atoms only need to diffuse and rearrange over a sufficiently short range during extremely rapid solidification. Concurrently, severe cracking occurred in the epitaxial splat/substrate systems, which indicated high tensile stress was produced during splat deposition. The origin of the tensile stress was attributed to the strong constraint of the locally heated substrate by its cold surroundings.

  8. The role of Si as surfactant and donor in molecular-beam epitaxy of AlN

    International Nuclear Information System (INIS)

    Lebedev, V.; Morales, F.M.; Romanus, H.; Krischok, S.; Ecke, G.; Cimalla, V.; Himmerlich, M.; Stauden, T.; Cengher, D.; Ambacher, O.

    2005-01-01

    The growth of Si-doped AlN(0001) thin films on Al 2 O 3 (0001) substrates by plasma-induced molecular-beam epitaxy is reported. We have found that Si positively affects the epitaxy being an effective surfactant for AlN growth with a remarkable impact on the crystal quality. It was proven that the characteristic surface reconstruction sequences frequently related to the Al adatoms are obviously Si induced on AlN(0001) surfaces. It was also observed that heavy doping conditions result in volume segregation of Si on the threading dislocation network and in the formation of an amorphous (AlO)(SiO)N cap layer caused by surface oxidation of the accumulated Al and segregated Si. The electron affinity was measured to be smaller than 0.5 eV on the clean AlN surface after removing of the cap layer using Ar + sputtering

  9. Growth of epitaxial thin films by pulsed laser ablation

    International Nuclear Information System (INIS)

    Lowndes, D.H.

    1992-01-01

    High-quality, high-temperature superconductor (HTSc) films can be grown by the pulsed laser ablation (PLA) process. This article provides a detailed introduction to the advantages and curent limitations of PLA for epitaxial film growth. Emphasis is placed on experimental methods and on exploitation of PLA to control epitaxial growth at either the unit cell or the atomic-layer level. Examples are taken from recent HTSc film growth. 33 figs, 127 refs

  10. Microwave dynamics of YBCO bi-epitaxial Josephson structures

    DEFF Research Database (Denmark)

    Constantinian, K. Y.; Ovsyannikov, G. A.; Mashtakov, A. D.

    1996-01-01

    The processes of interaction of microwaves (frequency View the MathML source) with a single high-Tc superconducting YBa2Cu3Ox (YBCO) bi-epitaxial grain-boundary junction and with an array of two junctions connected in series, have been investigated experimentally at temperatures T = 4.2− 77 K......, as well as the subharmonic detector response at weak magnetic fields φ microwave field induced frequency synchronization of two series connected bi-epitaxial YBCO junctions....

  11. Electrodeposition of epitaxial CdSe on (111) gallium arsenide

    Energy Technology Data Exchange (ETDEWEB)

    Cachet, H.; Cortes, R.; Froment, M. [Universite Pierre et Marie Curie, Paris (France). Phys. des Liquides et Electrochimie; Etcheberry, A. [Institut Lavoisier (IREM) UMR CNRS C0173, Universite de Versailles- St Quentin en Yvelynes, 45 Avenue des Etats Unis, 78035, Versailles (France)

    2000-02-21

    Epitaxial growth of CdSe has been achieved on GaAs(111) by electrodeposition from an aqueous electrolyte. The structure of the film corresponds to the cubic modification of CdSe. The quality of epitaxy has been investigated by reflection high energy electron diffraction, transmission electron microscopy and X-ray diffraction techniques. By XPS measurements the chemistry of the CdSe/GaAs interface and the composition of CdSe are determined. (orig.)

  12. Process for growing a film epitaxially upon a MGO surface and structures formed with the process

    Science.gov (United States)

    McKee, Rodney Allen; Walker, Frederick Joseph

    1998-01-01

    A process and structure wherein optical quality perovskites, such as BaTiO.sub.3 or SrTiO.sub.3, are grown upon a single crystal MgO substrate involves the epitaxial build up of alternating planes of TiO.sub.2 and metal oxide wherein the first plane grown upon the MgO substrate is a plane of TiO.sub.2. The layering sequence involved in the film build up reduces problems which would otherwise result from the interfacial electrostatics at the first atomic layers, and these oxides can be stabilized as commensurate thin films at a unit cell thickness or grown with high crystal quality to thicknesses of 0.5-0.7 .mu.m for optical device applications.

  13. Process for growing a film epitaxially upon a MgO surface

    Science.gov (United States)

    McKee, Rodney Allen; Walker, Frederick Joseph

    1997-01-01

    A process and structure wherein optical quality perovskites, such as BaTiO.sub.3 or SrTiO.sub.3, are grown upon a single crystal MgO substrate involves the epitaxial build up of alternating planes of TiO.sub.2 and metal oxide wherein the first plane grown upon the MgO substrate is a plane of TiO.sub.2. The layering sequence involved in the film build up reduces problems which would otherwise result from the interfacial electrostatics at the first atomic layers, and these oxides can be stabilized as commensurate thin films at a unit cell thickness or grown with high crystal quality to thicknesses of 0.5-0.7 .mu.m for optical device applications.

  14. Epitaxial growth and electronic structure of oxyhydride SrVO{sub 2}H thin films

    Energy Technology Data Exchange (ETDEWEB)

    Katayama, Tsukasa; Chikamatsu, Akira, E-mail: chikamatsu@chem.s.u-tokyo.ac.jp; Yamada, Keisuke; Onozuka, Tomoya [Department of Chemistry, The University of Tokyo, Bunkyo-ku, Tokyo 113-0033 (Japan); Shigematsu, Kei [Kanagawa Academy of Science and Technology, Kawasaki, Kanagawa 213-0012 (Japan); Minohara, Makoto; Kumigashira, Hiroshi [Institute of Materials Structure Science, High Energy Accelerator Research Organization (KEK), Tsukuba, Ibaraki 305-0801 (Japan); Ikenaga, Eiji [Japan Synchrotron Radiation Research Institute (JASRI)/SPring-8, Mikazuki-cho, Hyogo 679-5198 (Japan); Hasegawa, Tetsuya [Department of Chemistry, The University of Tokyo, Bunkyo-ku, Tokyo 113-0033 (Japan); Kanagawa Academy of Science and Technology, Kawasaki, Kanagawa 213-0012 (Japan)

    2016-08-28

    Oxyhydride SrVO{sub 2}H epitaxial thin films were fabricated on SrTiO{sub 3} substrates via topotactic hydridation of oxide SrVO{sub 3} films using CaH{sub 2}. Structural and composition analyses suggested that the SrVO{sub 2}H film possessed one-dimensionally ordered V-H{sup −}-V bonds along the out-of-plane direction. The synthesis temperature could be lowered by reducing the film thickness, and the SrVO{sub 2}H film was reversible to SrVO{sub 3} by oxidation through annealing in air. Photoemission and X-ray absorption spectroscopy measurements revealed the V{sup 3+} valence state in the SrVO{sub 2}H film, indicating that the hydrogen existed as hydride. Furthermore, the electronic density of states was highly suppressed at the Fermi energy, consistent with the prediction that tetragonal distortion induces metal to insulation transition.

  15. Epitaxial growth and electronic structure of oxyhydride SrVO2H thin films

    Science.gov (United States)

    Katayama, Tsukasa; Chikamatsu, Akira; Yamada, Keisuke; Shigematsu, Kei; Onozuka, Tomoya; Minohara, Makoto; Kumigashira, Hiroshi; Ikenaga, Eiji; Hasegawa, Tetsuya

    2016-08-01

    Oxyhydride SrVO2H epitaxial thin films were fabricated on SrTiO3 substrates via topotactic hydridation of oxide SrVO3 films using CaH2. Structural and composition analyses suggested that the SrVO2H film possessed one-dimensionally ordered V-H--V bonds along the out-of-plane direction. The synthesis temperature could be lowered by reducing the film thickness, and the SrVO2H film was reversible to SrVO3 by oxidation through annealing in air. Photoemission and X-ray absorption spectroscopy measurements revealed the V3+ valence state in the SrVO2H film, indicating that the hydrogen existed as hydride. Furthermore, the electronic density of states was highly suppressed at the Fermi energy, consistent with the prediction that tetragonal distortion induces metal to insulation transition.

  16. GaN/NbN epitaxial semiconductor/superconductor heterostructures

    Science.gov (United States)

    Yan, Rusen; Khalsa, Guru; Vishwanath, Suresh; Han, Yimo; Wright, John; Rouvimov, Sergei; Katzer, D. Scott; Nepal, Neeraj; Downey, Brian P.; Muller, David A.; Xing, Huili G.; Meyer, David J.; Jena, Debdeep

    2018-03-01

    Epitaxy is a process by which a thin layer of one crystal is deposited in an ordered fashion onto a substrate crystal. The direct epitaxial growth of semiconductor heterostructures on top of crystalline superconductors has proved challenging. Here, however, we report the successful use of molecular beam epitaxy to grow and integrate niobium nitride (NbN)-based superconductors with the wide-bandgap family of semiconductors—silicon carbide, gallium nitride (GaN) and aluminium gallium nitride (AlGaN). We apply molecular beam epitaxy to grow an AlGaN/GaN quantum-well heterostructure directly on top of an ultrathin crystalline NbN superconductor. The resulting high-mobility, two-dimensional electron gas in the semiconductor exhibits quantum oscillations, and thus enables a semiconductor transistor—an electronic gain element—to be grown and fabricated directly on a crystalline superconductor. Using the epitaxial superconductor as the source load of the transistor, we observe in the transistor output characteristics a negative differential resistance—a feature often used in amplifiers and oscillators. Our demonstration of the direct epitaxial growth of high-quality semiconductor heterostructures and devices on crystalline nitride superconductors opens up the possibility of combining the macroscopic quantum effects of superconductors with the electronic, photonic and piezoelectric properties of the group III/nitride semiconductor family.

  17. Surface chemistry and growth mechanisms studies of homo epitaxial (1 0 0) GaAs by laser molecular beam epitaxy

    International Nuclear Information System (INIS)

    Yan Dawei; Wu Weidong; Zhang Hong; Wang Xuemin; Zhang Hongliang; Zhang Weibin; Xiong Zhengwei; Wang Yuying; Shen Changle; Peng Liping; Han Shangjun; Zhou Minjie

    2011-01-01

    In this paper, GaAs thin film has been deposited on thermally desorbed (1 0 0) GaAs substrate using laser molecular beam epitaxy. Scanning electron microscopy, in situ reflection high energy electron diffraction and in situ X-ray photoelectron spectroscopy are applied for evaluation of the surface morphology and chemistry during growth process. The results show that a high density of pits is formed on the surface of GaAs substrate after thermal treatment and the epitaxial thin film heals itself by a step flow growth, resulting in a smoother surface morphology. Moreover, it is found that the incorporation of As species into GaAs epilayer is more efficient in laser molecular beam epitaxy than conventional molecular beam epitaxy. We suggest the growth process is impacted by surface chemistry and morphology of GaAs substrate after thermal treatment and the growth mechanisms are discussed in details.

  18. Epitaxial lateral overgrowth - a tool for dislocation blockade in multilayer system

    International Nuclear Information System (INIS)

    Zytkiewicz, Z.R.

    1998-01-01

    Results on epitaxial lateral overgrowth of GaAs layers are reported. The methods of controlling the growth anisotropy, the effect of substrate defects filtration in epitaxial lateral overgrowth procedure and influence of the mask on properties of epitaxial lateral overgrowth layers will be discussed. The case od GaAs epitaxial lateral overgrowth layers grown by liquid phase epitaxy on heavily dislocated GaAs substrates was chosen as an example to illustrate the processes discussed. The similarities between our results and those reported recently for GaN layers grown laterally by metalorganic vapour phase epitaxy will be underlined. (author)

  19. The growth of III-V nitrides heterostructure on Si substrate by plasma-assisted molecular beam epitaxy

    International Nuclear Information System (INIS)

    Beh, K.P.; Yam, F.K.; Chin, C.W.; Tneh, S.S.; Hassan, Z.

    2010-01-01

    This paper reports the growth of InGaN/GaN/AlN epitaxial layer on Si(1 1 1) substrate by utilizing plasma-assisted molecular beam epitaxy (PA-MBE) system. The as-grown film was characterized using high-resolution X-ray diffraction (HR-XRD) and photoluminescence (PL). High work function metals, iridium and gold were deposited on the film as metal contacts and their electrical characteristics at pre- and post-annealing were studied. The structural quality of this film is comparative to the values reported in the literature, and the indium molar fraction is 0.57 by employing Vegard's law. The relatively low yellow band emission signifies the grown film is of high quality. For metal contact studies it was found that the post-annealed sample for 5 min shows good conductivity as compared to the other samples.

  20. Molecular Beam Epitaxy Growth of Transition Metal Dichalcogenides

    Science.gov (United States)

    Yue, Ruoyu

    The exponential growth of Si-based technology has finally reached its limit, and a new generation of devices must be developed to continue scaling. A unique class of materials, transition metal dichalcogenides (TMD), have attracted great attention due to their remarkable optical and electronic properties at the atomic thickness scale. Over the past decade, enormous efforts have been put into TMD research for application in low-power devices. Among these studies, a high-quality TMD synthesis method is essential. Molecular beam epitaxy (MBE) can enable high-quality TMD growth by combining high purity elemental sources and an ultra-high vacuum growth environment, together with the back-end-of-line compatible growth temperatures. Although many TMD candidates have been grown by MBE with promising microstructure, the limited grain size (improvement in grain size was achieved through this study. Results from both experiment and simulation showed that reducing the growth rate, enabled by high growth temperature and low metal flux, is vital to nucleation density control. Meanwhile, providing a chalcogen-rich growth environment will promote larger grain lateral growth by suppressing vertical growth. Applying the knowledge learned from the nucleation study, we sucessfully integrated the MBE-grown WSe2 into Si complementary metal-oxide-semiconductor (CMOS) compatible field-effect transistors (FETs). Excellent transport properties, such as field effect hole mobilities (40 cm 2/V·s) with orders of magnitude improvement over the reported values of MBE-grown TMDs, are shown. These studies provide a comprehensive understanding of the MBE synthesis of TMDs and devices, indicating the great potential of integrating TMDs into CMOS process flows for the future electronics.

  1. Epitaxial Integration of Nanowires in Microsystems by Local Micrometer Scale Vapor Phase Epitaxy

    DEFF Research Database (Denmark)

    Mølhave, Kristian; Wacaser, Brent A.; Petersen, Dirch Hjorth

    2008-01-01

    deposition (CVD) or metal organic VPE (MOVPE). However, VPE of semiconducting nanowires is not compatible with several microfabrication processes due to the high synthesis temperatures and issues such as cross-contamination interfering with the intended microsystem or the VPE process. By selectively heating...... a small microfabricated heater, growth of nanowires can be achieved locally without heating the entire microsystem, thereby reducing the compatibility problems. The first demonstration of epitaxial growth of silicon nanowires by this method is presented and shows that the microsystem can be used for rapid...

  2. Epitaxial growth of Sb-doped nonpolar a-plane ZnO thin films on r-plane sapphire substrates by RF magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Chen, Hou-Guang, E-mail: houguang@isu.edu.tw [Department of Materials Science and Engineering, I-Shou University, Kaohsiung 840, Taiwan (China); Hung, Sung-Po [Department of Materials Science and Engineering, I-Shou University, Kaohsiung 840, Taiwan (China)

    2014-02-15

    Highlights: ► Sb-doped nonpolar a-plane ZnO layers were epitaxially grown on sapphire substrates. ► Crystallinity and electrical properties were studied upon growth condition and doping concentration. ► The out-of-plane lattice spacing of ZnO films reduces monotonically with increasing Sb doping level. ► The p-type conductivity of ZnO:Sb film is closely correlated with annealing condition and Sb doping level. -- Abstract: In this study, the epitaxial growth of Sb-doped nonpolar a-plane (112{sup ¯}0) ZnO thin films on r-plane (11{sup ¯}02) sapphire substrates was performed by radio-frequency magnetron sputtering. The influence of the sputter deposition conditions and Sb doping concentration on the microstructural and electrical properties of Sb-doped ZnO epitaxial films was investigated using X-ray diffraction (XRD), scanning electron microscopy (SEM) and the Hall-effect measurement. The measurement of the XRD phi-scan indicated that the epitaxial relationship between the ZnO:Sb layer and sapphire substrate was (112{sup ¯}0){sub ZnO}//(11{sup ¯}02){sub Al{sub 2O{sub 3}}} and [11{sup ¯}00]{sub ZnO}//[112{sup ¯}0]{sub Al{sub 2O{sub 3}}}. The out-of-plane a-axis lattice parameter of ZnO films was reduced monotonically with the increasing Sb doping level. The cross-sectional transmission electron microscopy (XTEM) observation confirmed the absence of any significant antimony oxide phase segregation across the thickness of the Sb-doped ZnO epitaxial film. However, the epitaxial quality of the films deteriorated as the level of Sb dopant increased. The electrical properties of ZnO:Sb film are closely correlated with post-annealing conditions and Sb doping concentrations.

  3. Molecular beam epitaxy of graphene on mica

    International Nuclear Information System (INIS)

    Lippert, G.; Dabrowski, J.; Yamamoto, Y.; Mehr, W.; Lupina, G.; Herziger, F.; Maultzsch, J.; Baringhaus, J.; Tegenkamp, C.; Lemme, M.C.

    2012-01-01

    Realization of graphene devices is often hindered by the fact that the known layer growth methods do not meet the requirements of the device fabrication in silicon mainstream technology. For example, the relatively straightforward method of decomposition of hexagonal SiC is not CMOS-compatible due to the high-thermal budget it requires [Moon et al., IEEE Electron Device Lett. 31, 260 (2010)]. Techniques based on layer transfer are restricted because of the uncertainty of residual metal contaminants, particles, and structural defects. Of interest is thus a method that would allow one to grow a graphene film directly in the device area where graphene is needed. Production of large area graphene is not necessarily required in this case, but high quality of the film and metal-free growth on an insulating substrate at temperatures below 1000 C are important requirements. We demonstrate direct growth of defect-free graphene on insulators at moderate temperatures by molecular beam epitaxy. The quality of the graphene was probed by high-resolution Raman spectroscopy, indicating a negligible density of defects. The spectra are compared with those from graphene flakes mechanically exfoliated from native graphite onto mica. These results are combined with insights from density functional theory calculations. A model of graphene growth on mica and similar substrates is proposed. (Copyright copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  4. State memory in solution gated epitaxial graphene

    Science.gov (United States)

    Butko, A. V.; Butko, V. Y.; Lebedev, S. P.; Lebedev, A. A.; Davydov, V. Y.; Smirnov, A. N.; Eliseyev, I. A.; Dunaevskiy, M. S.; Kumzerov, Y. A.

    2018-06-01

    We studied electrical transport in transistors fabricated on a surface of high quality epitaxial graphene with density of defects as low as 5·1010 cm-2 and observed quasistatic hysteresis with a time constant in a scale of hours. This constant is in a few orders of magnitude greater than the constant previously reported in CVD graphene. The hysteresis observed here can be described as a shift of ∼+2V of the Dirac point measured during a gate voltage increase from the position of the Dirac point measured during a gate voltage decrease. This hysteresis can be characterized as a nonvolatile quasistatic state memory effect in which the state of the gated graphene is determined by its initial state prior to entering the hysteretic region. Due to this effect the difference in resistance of the gated graphene measured in the hysteretic region at the same applied voltages can be as high as 70%. The observed effect can be explained by assuming that charge carriers in graphene and oppositely charged molecular ions from the solution form quasistable interfacial complexes at the graphene interface. These complexes likely preserve the initial state by preventing charge carriers in graphene from discharging in the hysteretic region.

  5. Epitaxial thin film growth of LiH using a liquid-Li atomic template

    Energy Technology Data Exchange (ETDEWEB)

    Oguchi, Hiroyuki, E-mail: oguchi@nanosys.mech.tohoku.ac.jp [Department of Nanomechanics, Tohoku University, Sendai 980-8579 (Japan); Micro System Integration Center (muSIC), Tohoku University, Sendai 980-0845 (Japan); Ikeshoji, Tamio; Orimo, Shin-ichi [Institute for Materials Research, Tohoku University, Sendai 980-8577 (Japan); Advanced Institute for Materials Research (AIMR), Tohoku University, Sendai 980-8577 (Japan); Ohsawa, Takeo; Shiraki, Susumu; Hitosugi, Taro [Advanced Institute for Materials Research (AIMR), Tohoku University, Sendai 980-8577 (Japan); Kuwano, Hiroki [Department of Nanomechanics, Tohoku University, Sendai 980-8579 (Japan)

    2014-11-24

    We report on the synthesis of lithium hydride (LiH) epitaxial thin films through the hydrogenation of a Li melt, forming abrupt LiH/MgO interface. Experimental and first-principles molecular dynamics studies reveal a comprehensive microscopic picture of the crystallization processes, which sheds light on the fundamental atomistic growth processes that have remained unknown in the vapor-liquid-solid method. We found that the periodic structure that formed, because of the liquid-Li atoms at the film/MgO-substrate interface, serves as an atomic template for the epitaxial growth of LiH crystals. In contrast, films grown on the Al{sub 2}O{sub 3} substrates indicated polycrystalline films with a LiAlO{sub 2} secondary phase. These results and the proposed growth process provide insights into the preparation of other alkaline metal hydride thin films on oxides. Further, our investigations open the way to explore fundamental physics and chemistry of metal hydrides including possible phenomena that emerge at the heterointerfaces of metal hydrides.

  6. Hybrid molecular beam epitaxy for the growth of stoichiometric BaSnO{sub 3}

    Energy Technology Data Exchange (ETDEWEB)

    Prakash, Abhinav, E-mail: praka019@umn.edu; Dewey, John; Yun, Hwanhui; Jeong, Jong Seok; Mkhoyan, K. Andre; Jalan, Bharat, E-mail: bjalan@umn.edu [Department of Chemical Engineering and Materials Science, University of Minnesota, Minneapolis, Minnesota 55455 (United States)

    2015-11-15

    Owing to its high room-temperature electron mobility and wide bandgap, BaSnO{sub 3} has recently become of significant interest for potential room-temperature oxide electronics. A hybrid molecular beam epitaxy (MBE) approach for the growth of high-quality BaSnO{sub 3} films is developed in this work. This approach employs hexamethylditin as a chemical precursor for tin, an effusion cell for barium, and a radio frequency plasma source for oxygen. BaSnO{sub 3} films were thus grown on SrTiO{sub 3} (001) and LaAlO{sub 3} (001) substrates. Growth conditions for stoichiometric BaSnO{sub 3} were identified. Reflection high-energy electron diffraction (RHEED) intensity oscillations, characteristic of a layer-by-layer growth mode were observed. A critical thickness of ∼1 nm for strain relaxation was determined for films grown on SrTiO{sub 3} using in situ RHEED. Scanning transmission electron microscopy combined with electron energy-loss spectroscopy and energy dispersive x-ray spectroscopy confirmed the cube-on-cube epitaxy and composition. The importance of precursor chemistry is discussed in the context of the MBE growth of BaSnO{sub 3}.

  7. From epitaxial growth of ferrite thin films to spin-polarized tunnelling

    International Nuclear Information System (INIS)

    Moussy, Jean-Baptiste

    2013-01-01

    This paper presents a review of the research which is focused on ferrite thin films for spintronics. First, I will describe the potential of ferrite layers for the generation of spin-polarized currents. In the second step, the structural and chemical properties of epitaxial thin films and ferrite-based tunnel junctions will be presented. Particular attention will be given to ferrite systems grown by oxygen-assisted molecular beam epitaxy. The analysis of the structure and chemistry close to the interfaces, a key-point for understanding the spin-polarized tunnelling measurements, will be detailed. In the third part, the magnetic and magneto-transport properties of magnetite (Fe 3 O 4 ) thin films as a function of structural defects such as the antiphase boundaries will be explained. The spin-polarization measurements (spin-resolved photoemission, tunnel magnetoresistance) on this oxide predicted to be half-metallic will be discussed. Fourth, the potential of magnetic tunnel barriers, such as CoFe 2 O 4 , NiFe 2 O 4 or MnFe 2 O 4 , whose insulating behaviour and the high Curie temperatures make it exciting candidates for spin filtering at room temperature will be described. Spin-polarized tunnelling experiments, involving either Meservey–Tedrow or tunnel magnetoresistance measurements, will reveal significant spin-polarizations of the tunnelling current at low temperatures but also at room temperatures. Finally, I will mention a few perspectives with ferrite-based heterostructures. (topical review)

  8. Radical-source molecular beam epitaxy of ZnO-based heterostructures

    Energy Technology Data Exchange (ETDEWEB)

    Sadofiev, Sergey

    2009-10-27

    This work focuses on the development of the novel growth approaches for the fabrication of Group II-oxide materials in the form of epitaxial films and heterostructures. It is shown that molecular-beam epitaxial growth far from thermal equilibrium allows one to overcome the standard solubility limit and to alloy ZnO with MgO or CdO in strict wurtzite phase up to mole fractions of several 10 %. In this way, a band-gap range from 2.2 to 4.4 eV can be covered. A clear layer-by-layer growth mode controlled by oscillations in reflection high-energy electron diffraction makes it possible to fabricate atomically smooth heterointerfaces and well-defined quantum well structures exhibiting prominent band-gap related light emission in the whole composition range. On appropriately designed structures, laser action from the ultraviolet down to green wavelengths and up to room temperature is achieved. The properties and potential of the ''state-of-the-art'' materials are discussed in relation to the advantages for their applications in various optoelectronic devices. (orig.)

  9. Epitaxial thin film growth of LiH using a liquid-Li atomic template

    International Nuclear Information System (INIS)

    Oguchi, Hiroyuki; Ikeshoji, Tamio; Orimo, Shin-ichi; Ohsawa, Takeo; Shiraki, Susumu; Hitosugi, Taro; Kuwano, Hiroki

    2014-01-01

    We report on the synthesis of lithium hydride (LiH) epitaxial thin films through the hydrogenation of a Li melt, forming abrupt LiH/MgO interface. Experimental and first-principles molecular dynamics studies reveal a comprehensive microscopic picture of the crystallization processes, which sheds light on the fundamental atomistic growth processes that have remained unknown in the vapor-liquid-solid method. We found that the periodic structure that formed, because of the liquid-Li atoms at the film/MgO-substrate interface, serves as an atomic template for the epitaxial growth of LiH crystals. In contrast, films grown on the Al 2 O 3 substrates indicated polycrystalline films with a LiAlO 2 secondary phase. These results and the proposed growth process provide insights into the preparation of other alkaline metal hydride thin films on oxides. Further, our investigations open the way to explore fundamental physics and chemistry of metal hydrides including possible phenomena that emerge at the heterointerfaces of metal hydrides

  10. Self-regulated growth of LaVO3 thin films by hybrid molecular beam epitaxy

    International Nuclear Information System (INIS)

    Zhang, Hai-Tian; Engel-Herbert, Roman; Dedon, Liv R.; Martin, Lane W.

    2015-01-01

    LaVO 3 thin films were grown on SrTiO 3 (001) by hybrid molecular beam epitaxy. A volatile metalorganic precursor, vanadium oxytriisopropoxide (VTIP), and elemental La were co-supplied in the presence of a molecular oxygen flux. By keeping the La flux fixed and varying the VTIP flux, stoichiometric LaVO 3 films were obtained for a range of cation flux ratios, indicating the presence of a self-regulated growth window. Films grown under stoichiometric conditions were found to have the largest lattice parameter, which decreased monotonically with increasing amounts of excess La or V. Energy dispersive X-ray spectroscopy and Rutherford backscattering measurements were carried out to confirm film compositions. Stoichiometric growth of complex vanadate thin films independent of cation flux ratios expands upon the previously reported self-regulated growth of perovskite titanates using hybrid molecular beam epitaxy, thus demonstrating the general applicability of this growth approach to other complex oxide materials, where a precise control over film stoichiometry is demanded by the application

  11. Direct Measurements of Island Growth and Step-Edge Barriers in Colloidal Epitaxy

    KAUST Repository

    Ganapathy, R.; Buckley, M. R.; Gerbode, S. J.; Cohen, I.

    2010-01-01

    -scale particles into microstructures that have numerous technological applications. To determine whether atomic epitaxial growth laws are applicable to the epitaxy of larger particles with attractive interactions, we investigated the nucleation and growth dynamics

  12. Characterization and Utilization of Calcium Oxide (CaO Thermally Decomposed from Fish Bones as a Catalyst in the Production of Biodiesel from Waste Cooking Oil

    Directory of Open Access Journals (Sweden)

    Aldes Lesbani

    2016-12-01

    Full Text Available Thermal decomposition of fish bones to obtain calcium oxide (CaO was conducted at various temperatures of 400, 500, 800, 900, 1000, and 1100 °C. The calcium oxide was then characterized using X-ray diffractometer, FTIR spectrophotometer, and SEM analysis. The calcium oxide obtained from the decomposition at 1000 °C was then used as a catalyst in the production of biodiesel from waste cooking oil. Diffraction pattern of the calcium oxide produced from decomposition at 1000 °C showed a pattern similar to that of the calcium oxide produced by the Joint Committee on Powder Diffraction Standard (JCDPS. The diffractions of 2θvalues at 1000 °C were 32.2, 37.3, 53.8, 64.1, and67.3 deg. The FTIR spectrum of calcium oxide decomposed at 1000 °C has a specific vibration at wave-length 362 cm-1, which is similar to the specific vibration of Ca-O. SEM analysis of the calcium oxide indicated that the calcium oxide’s morphology shows a smaller size and a more homogeneous structure, compared to those of fish bones. Theuse of calcium oxide as a catalyst in the production of biodiesel from waste cooking oil resulted in iod number of 15.23 g/100 g KOH, density of 0.88 g/cm3, viscosity of 6.00 cSt, and fatty acid value of 0.56 mg/KOH. These characteristic values meet the National Standard of Indonesia (SNI for biodiesel.

  13. Pareto utility

    NARCIS (Netherlands)

    Ikefuji, M.; Laeven, R.J.A.; Magnus, J.R.; Muris, C.H.M.

    2013-01-01

    In searching for an appropriate utility function in the expected utility framework, we formulate four properties that we want the utility function to satisfy. We conduct a search for such a function, and we identify Pareto utility as a function satisfying all four desired properties. Pareto utility

  14. Epitaxial YBa2Cu3O7 on biaxially textured (001) Ni: An approach to high critical current density superconducting tapes

    International Nuclear Information System (INIS)

    Norton, D.P.; Goyal, A.; Budai, J.D.

    1997-01-01

    In-plane aligned, c-axis oriented YBa 2 Cu 3 O 7 (YBCO) films with superconducting critical current densities, J c , as high as 700,000 amperes per square centimeter at 77 kelvin have been grown on thermo-mechanically, rolled-textured (001) Ni tapes using pulsed-laser deposition. Epitaxial growth of oxide buffer layers directly on biaxially textured Ni, formed by recrystallization of cold-rolled pure Ni, enables the growth of 1.5 micrometer-thick YBCO films with superconducting properties that are comparable to those observed for epitaxial films on single crystal oxide substrates. This result represents a viable approach for producing long-length superconducting tapes for high current, high field applications at 77 kelvin

  15. Non-Epitaxial Thin-Film Indium Phosphide Photovoltaics: Growth, Devices, and Cost Analysis

    Science.gov (United States)

    Zheng, Maxwell S.

    InP cell as the active layer in a monolithically integrated module. Importantly, TF-VLS growth avoids the hobbles of traditional growth: the epitaxial wafer substrate, low utilization efficiency of expensive metalorganic precursors, and high capital depreciation costs due to low throughput. Production costs are projected to be 0.76/W(DC) for the benchmark case of 12% efficient modules and would decrease to 0.40/W(DC) for the long-term potential case of 24% efficient modules.

  16. Lateral epitaxial overgrowth of GaN on a patterned GaN-on-silicon substrate by molecular beam epitaxy

    International Nuclear Information System (INIS)

    Wang, Yongjin; Hu, Fangren; Hane, Kazuhiro

    2011-01-01

    We report here the lateral epitaxial overgrowth (LEO) of GaN on a patterned GaN-on-silicon substrate by molecular beam epitaxy (MBE) growth with radio frequency nitrogen plasma as a gas source. Two kinds of GaN nanostructures are defined by electron beam lithography and realized on a GaN substrate by fast atom beam etching. The epitaxial growth of GaN by MBE is performed on the prepared GaN template, and the selective growth of GaN takes place with the assistance of GaN nanostructures. The LEO of GaN produces novel GaN epitaxial structures which are dependent on the shape and the size of the processed GaN nanostructures. Periodic GaN hexagonal pyramids are generated inside the air holes, and GaN epitaxial strips with triangular section are formed in the grating region. This work provides a promising way for producing novel GaN-based devices by the LEO of GaN using the MBE technique

  17. Growth and characterization of Hg 1– Cd Te epitaxial films by ...

    Indian Academy of Sciences (India)

    Growth of Hg1–CdTe epitaxial films by a new technique called asymmetric vapour phase epitaxy (ASVPE) has been carried out on CdTe and CZT substrates. The critical problems faced in normal vapour phase epitaxy technique like poor surface morphology, composition gradient and dislocation multiplication have ...

  18. Growth and characterization of Hg1–xCdxTe epitaxial films by ...

    Indian Academy of Sciences (India)

    Unknown

    Abstract. Growth of Hg1–xCdxTe epitaxial films by a new technique called asymmetric vapour phase epitaxy. (ASVPE) has been carried out on CdTe and CZT substrates. The critical problems faced in normal vapour phase epitaxy technique like poor surface morphology, composition gradient and dislocation multiplication.

  19. Ion beam induced epitaxy in Ge- and B- coimplanted silicon

    International Nuclear Information System (INIS)

    Hayashi, N.; Hasegawa, M.; Tanoue, H.; Takahashi, H.; Shimoyama, K.; Kuriyama, K.

    1992-01-01

    The epitaxial regrowth of amorphous surface layers in and Si substrate has been studied under irradiation with 400 keV Ar + ions at the temperature range from 300 to 435degC. The amorphous layers were obtained by Ge + implantation, followed by B + implantation. The ion beam assisted epitaxy was found to be sensitive to both the substrate orientation and the implanted Ge concentration, and the layer-by-layer epitaxial regrowth seemed to be precluded in Si layers with high doses of Ge implants, e.g., 2.5 x 10 15 ions/cm 2 . Electrical activation of implanted dopant B was also measured in the recrystallized Si layer. (author)

  20. Interaction of epitaxial silicene with overlayers formed by exposure to Al atoms and O2 molecules.

    Science.gov (United States)

    Friedlein, R; Van Bui, H; Wiggers, F B; Yamada-Takamura, Y; Kovalgin, A Y; de Jong, M P

    2014-05-28

    As silicene is not chemically inert, the study and exploitation of its electronic properties outside of ultrahigh vacuum environments require the use of insulating capping layers. In order to understand if aluminum oxide might be a suitable encapsulation material, we used high-resolution synchrotron photoelectron spectroscopy to study the interactions of Al atoms and O2 molecules, as well as the combination of both, with epitaxial silicene on thin ZrB2(0001) films grown on Si(111). The deposition of Al atoms onto silicene, up to the coverage of about 0.4 Al per Si atoms, has little effect on the chemical state of the Si atoms. The silicene-terminated surface is also hardly affected by exposure to O2 gas, up to a dose of 4500 L. In contrast, when Al-covered silicene is exposed to the same dose, a large fraction of the Si atoms becomes oxidized. This is attributed to dissociative chemisorption of O2 molecules by Al atoms at the surface, producing reactive atomic oxygen species that cause the oxidation. It is concluded that aluminum oxide overlayers prepared in this fashion are not suitable for encapsulation since they do not prevent but actually enhance the degradation of silicene.

  1. Proton and γ-ray Induced Radiation Effects on 1 Gbit LPDDR SDRAM Fabricated on Epitaxial Wafer for Space Applications

    Directory of Open Access Journals (Sweden)

    Mi Young Park

    2016-09-01

    Full Text Available We present proton-induced single event effects (SEEs and γ-ray-induced total ionizing dose (TID data for 1 Gbit lowpower double data rate synchronous dynamic random access memory (LPDDR SDRAM fabricated on a 5 μm epitaxial layer (54 nm complementary metal-oxide-semiconductor (CMOS technology. We compare our radiation tolerance data for LPDDR SDRAM with those of general DDR SDRAM. The data confirms that our devices under test (DUTs are potential candidates for space flight applications.

  2. InAs nanocrystals on SiO2/Si by molecular beam epitaxy for memory applications

    International Nuclear Information System (INIS)

    Hocevar, Moiera; Regreny, Philippe; Descamps, Armel; Albertini, David; Saint-Girons, Guillaume; Souifi, Abdelkader; Gendry, Michel; Patriarche, Gilles

    2007-01-01

    We studied a memory structure based on InAs nanocrystals grown by molecular beam epitaxy directly on thermal SiO 2 on silicon. Both nanocrystal diameter and density can be controlled by growth parameters. Transmission electron microscopy analysis shows high crystallinity and low size dispersion. In an electrical test structure with a 3.5 nm tunnel oxide, we observed that 80% of the initial injected electrons remain stored in the InAs nanocrystals after 3 months and that the retention time for electrons in InAs nanocrystals is four orders of magnitude higher than in silicon nanocrystals

  3. Epitaxial graphene-encapsulated surface reconstruction of Ge(110)

    Science.gov (United States)

    Campbell, Gavin P.; Kiraly, Brian; Jacobberger, Robert M.; Mannix, Andrew J.; Arnold, Michael S.; Hersam, Mark C.; Guisinger, Nathan P.; Bedzyk, Michael J.

    2018-04-01

    Understanding and engineering the properties of crystalline surfaces has been critical in achieving functional electronics at the nanoscale. Employing scanning tunneling microscopy, surface x-ray diffraction, and high-resolution x-ray reflectivity experiments, we present a thorough study of epitaxial graphene (EG)/Ge(110) and report a Ge(110) "6 × 2" reconstruction stabilized by the presence of epitaxial graphene unseen in group-IV semiconductor surfaces. X-ray studies reveal that graphene resides atop the surface reconstruction with a 0.34 nm van der Waals (vdW) gap and provides protection from ambient degradation.

  4. Seed layer technique for high quality epitaxial manganite films

    Directory of Open Access Journals (Sweden)

    P. Graziosi

    2016-08-01

    Full Text Available We introduce an innovative approach to the simultaneous control of growth mode and magnetotransport properties of manganite thin films, based on an easy-to-implement film/substrate interface engineering. The deposition of a manganite seed layer and the optimization of the substrate temperature allows a persistent bi-dimensional epitaxy and robust ferromagnetic properties at the same time. Structural measurements confirm that in such interface-engineered films, the optimal properties are related to improved epitaxy. A new growth scenario is envisaged, compatible with a shift from heteroepitaxy towards pseudo-homoepitaxy. Relevant growth parameters such as formation energy, roughening temperature, strain profile and chemical states are derived.

  5. Epitaxial Growth of MgxCa1-xO on GaN by Atomic Layer Deposition.

    Science.gov (United States)

    Lou, Xiabing; Zhou, Hong; Kim, Sang Bok; Alghamdi, Sami; Gong, Xian; Feng, Jun; Wang, Xinwei; Ye, Peide D; Gordon, Roy G

    2016-12-14

    We demonstrate for the first time that a single-crystalline epitaxial Mg x Ca 1-x O film can be deposited on gallium nitride (GaN) by atomic layer deposition (ALD). By adjusting the ratio between the amounts of Mg and Ca in the film, a lattice matched Mg x Ca 1-x O/GaN(0001) interface can be achieved with low interfacial defect density. High-resolution X-ray diffraction (XRD) shows that the lattice parameter of this ternary oxide nearly obeys Vegard's law. An atomically sharp interface from cross-sectional transmission electron microscopy (TEM) confirmed the high quality of the epitaxy. High-temperature capacitance-voltage characterization showed that the film with composition Mg 0.25 Ca 0.75 O has the lowest interfacial defect density. With this optimal oxide composition, a Mg 0.25 Ca 0.75 O/AlGaN/GaN metal-oxide-semiconductor high-electron-mobility (MOS-HEMT) device was fabricated. An ultrahigh on/off ratio of 10 12 and a near ideal SS of 62 mV/dec were achieved with this device.

  6. Synthesis and electronic properties of Fe2TiO5 epitaxial thin films

    Science.gov (United States)

    Osada, Motoki; Nishio, Kazunori; Hwang, Harold Y.; Hikita, Yasuyuki

    2018-05-01

    We investigate the growth phase diagram of pseudobrookite Fe2TiO5 epitaxial thin films on LaAlO3 (001) substrates using pulsed laser deposition. Control of the oxygen partial pressure and temperature during deposition enabled selective stabilization of (100)- and (230)-oriented films. In this regime, we find an optical gap of 2.1 eV and room temperature resistivity in the range of 20-80 Ω cm, which are significantly lower than α-Fe2O3, making Fe2TiO5 potentially an ideal inexpensive visible-light harvesting semiconductor. These results provide a basis to incorporate Fe2TiO5 in oxide heterostructures for photocatalytic and photoelectrochemical applications.

  7. Epitaxial growth and characterization of CoO/Fe(001) thin film layered structures

    International Nuclear Information System (INIS)

    Brambilla, A.; Sessi, P.; Cantoni, M.; Duo, L.; Finazzi, M.; Ciccacci, F.

    2008-01-01

    By means of X-ray photoemission spectroscopy and low energy electron diffraction, we show that it is possible to grow good quality thin epitaxial CoO films on Fe(001) substrates, through deposition in oxygen atmosphere. In particular, the composition and the structure of CoO(001)/Fe(001) bilayer systems and Fe(001)/CoO(001)/Fe(001) trilayer systems have been investigated by monitoring the evolution of the chemical interactions at the interfaces as a function of CoO thickness and growth temperature. We observe the presence of Fe oxides at the CoO/Fe interface and of a thin layer of metallic cobalt at the upper Fe/CoO interface of trilayer systems

  8. Strain Induced Magnetism in SrRuO3 Epitaxial Thin Films

    Energy Technology Data Exchange (ETDEWEB)

    Grutter, A.; Wong, F.; Arenholz, E.; Liberati, M.; Suzuki, Y.

    2010-01-10

    Epitaxial SrRuO{sub 3} thin films were grown on SrTiO{sub 3}, (LaAlO{sub 3}){sub 0.3}(SrAlO{sub 3}){sub 0.7} and LaAlO{sub 3} substrates inducing different biaxial compressive strains. Coherently strained SrRuO{sub 3} films exhibit enhanced magnetization compared to previously reported bulk and thin film values of 1.1-1.6 {micro}{sub B} per formula unit. A comparison of (001) and (110) SrRuO{sub 3} films on each substrate indicates that films on (110) oriented have consistently higher saturated moments than corresponding (001) films. These observations indicate the importance of lattice distortions in controlling the magnetic ground state in this transitional metal oxide.

  9. Dynamic Atomic Reconstruction: How Fe_{3}O_{4} Thin Films Evade Polar Catastrophe for Epitaxy

    Directory of Open Access Journals (Sweden)

    C. F. Chang

    2016-10-01

    Full Text Available Polar catastrophe at the interface of oxide materials with strongly correlated electrons has triggered a flurry of new research activities. The expectations are that the design of such advanced interfaces will become a powerful route to engineer devices with novel functionalities. Here, we investigate the initial stages of growth and the electronic structure of the spintronic Fe_{3}O_{4}/MgO(001 interface. Using soft x-ray absorption spectroscopy, we have discovered that the so-called A-sites are completely missing in the first Fe_{3}O_{4} monolayer. This discovery allows us to develop an unexpected but elegant growth principle in which, during deposition, the Fe atoms are constantly on the move to solve the divergent electrostatic potential problem, thereby ensuring epitaxy and stoichiometry at the same time. This growth principle provides a new perspective for the design of interfaces.

  10. Epitaxial Pb(Zr,Ti)O3 thin films for a MEMS application

    International Nuclear Information System (INIS)

    Nguyen, Minh D; Vu, Hung N; Blank, Dave H A; Rijnders, Guus

    2011-01-01

    This research presents the deposition and device fabrication of epitaxial Pb(Zr,Ti)O 3 (PZT) thin films for applications in microelectromechanical systems (MEMS). A piezoelectric micro-membrane is described as an example. Using the pulsed laser deposition (PLD) technique and the MEMS microfabrication process, the piezo-membranes with diameters ranging from 200 to 500 μm were obtained. The displacement of piezo-membranes increased from 5.1 to 17.5 nm V −1 with a piezoelectric-membrane diameter in the range of 200–500 μm. Furthermore, the effect of PZT film-thickness on the mechanical properties has been investigated. By using the conductive-oxide SrRuO 3 (SRO) layers as the electrodes, the degradation of both ferroelectric and piezoelectric properties is prevented up to 10 10 switching cycles

  11. Pulsed laser deposition of epitaxial Sr(RuxSn1-x)O3 thin film electrodes and KNbO3/Sr(RuxSn1-x)O3 bilayers

    International Nuclear Information System (INIS)

    Christen, H.M.; Boatner, L.A.; English, L.Q.; Geea, L.A.; Marrero, P.J.; Norton, D.P.

    1995-01-01

    Sr(Ru x Sn 1-x ) 3 is proposed as a new conducting oxide for use in epitaxial multilayer structures. The Sr(Ru o 48 Sn 0.52 )0 3 composition exhibits an excellent lattice match with (100)-oriented KTaO 3 , and films of this composition grown by pulsed laser deposition on KTaO 3 , SrTiO 3 , and LaAlO 3 substrates have been analyzed by X-ray diffraction, Rutherford backscattering/ion channeling, and resistivity measurements. Epitaxial KNbO 3 /Sr(Ru 0.48 Sn 0.52 )O 3 bilayers have been successfully grown

  12. Abstracts of 4. International Workshop on Molecular Beam Epitaxy and Vapour Phase Epitaxy Growth Physics and Technology

    International Nuclear Information System (INIS)

    2001-01-01

    4. International Workshop on Molecular Beam Epitaxy and Vapour Phase Epitaxy Growth Physics and Technology is the periodically held forum for discussion the problems connected with manufacturing of different nanostructures (thin films, quantum wells, quantum dots) needed in microelectronics. Preparation of such materials with desirable optical, electrical and magnetic properties being determined by their chemical composition and crystal structure has been discussed in detail during the workshop sessions. Optimization of crystal growth methods such as VPE and MBE from the view point of obtained material properties has also been extensively discussed

  13. Epitaxial growth and characterization of CuGa2O4 films by laser molecular beam epitaxy

    OpenAIRE

    Hongling Wei; Zhengwei Chen; Zhenping Wu; Wei Cui; Yuanqi Huang; Weihua Tang

    2017-01-01

    Ga2O3 with a wide bandgap of ∼ 4.9 eV can crystalize in five crystalline phases. Among those phases, the most stable monoclinic β-Ga2O3 has been studied most, however, it is hard to find materials lattice matching with β-Ga2O3 to grown epitaxial thin films for optoelectronic applications. In this work, CuGa2O4 bulk were prepared by solid state reaction as target, and the films were deposited on sapphire substrates by laser molecular beam epitaxy (L-MBE) at different substrate temperatures. Th...

  14. Epitaxial growth of SrTiO3 thin film on Si by laser molecular beam epitaxy

    International Nuclear Information System (INIS)

    Zhou, X. Y.; Miao, J.; Dai, J. Y.; Chan, H. L. W.; Choy, C. L.; Wang, Y.; Li, Q.

    2007-01-01

    SrTiO 3 thin films have been deposited on Si (001) wafers by laser molecular beam epitaxy using an ultrathin Sr layer as the template. X-ray diffraction measurements indicated that SrTiO 3 was well crystallized and epitaxially aligned with Si. Cross-sectional observations in a transmission electron microscope revealed that the SrTiO 3 /Si interface was sharp, smooth, and fully crystallized. The thickness of the Sr template was found to be a critical factor that influenced the quality of SrTiO 3 and the interfacial structure. Electrical measurements revealed that the SrTiO 3 film was highly resistive

  15. Ultrathin, epitaxial cerium dioxide on silicon

    Energy Technology Data Exchange (ETDEWEB)

    Flege, Jan Ingo, E-mail: flege@ifp.uni-bremen.de; Kaemena, Björn; Höcker, Jan; Schmidt, Thomas; Falta, Jens [Institute of Solid State Physics, University of Bremen, Otto-Hahn-Allee 1, 28359 Bremen (Germany); Bertram, Florian [Photon Science, Deutsches Elektronensynchrotron (DESY), Notkestraße 85, 22607 Hamburg (Germany); Wollschläger, Joachim [Department of Physics, University of Osnabrück, Barbarastraße 7, 49069 Osnabrück (Germany)

    2014-03-31

    It is shown that ultrathin, highly ordered, continuous films of cerium dioxide may be prepared on silicon following substrate prepassivation using an atomic layer of chlorine. The as-deposited, few-nanometer-thin Ce{sub 2}O{sub 3} film may very effectively be converted at room temperature to almost fully oxidized CeO{sub 2} by simple exposure to air, as demonstrated by hard X-ray photoemission spectroscopy and X-ray diffraction. This post-oxidation process essentially results in a negligible loss in film crystallinity and interface abruptness.

  16. Engineering of the energetic structure of the anode of organic photovoltaic devices utilizing hot-wire deposited transition metal oxide layers

    Energy Technology Data Exchange (ETDEWEB)

    Vasilopoulou, M., E-mail: mariva@imel.demokritos.gr [Institute of Nanoscience and Nanotechnology, Department of Microelectronics, National Center for Scientific Research Demokritos, POB 60228, 15310 Agia Paraskevi, Attiki (Greece); Stathopoulos, N.A.; Savaidis, S.A. [Department of Electronics, Technological and Educational Institute (TEI) of Piraeus, Petrou Ralli & Thivon, 12244 Aegaleo (Greece); Kostis, I. [Institute of Nanoscience and Nanotechnology, Department of Microelectronics, National Center for Scientific Research Demokritos, POB 60228, 15310 Agia Paraskevi, Attiki (Greece); Department of Electronics, Technological and Educational Institute (TEI) of Piraeus, Petrou Ralli & Thivon, 12244 Aegaleo (Greece); Papadimitropoulos, G. [Institute of Nanoscience and Nanotechnology, Department of Microelectronics, National Center for Scientific Research Demokritos, POB 60228, 15310 Agia Paraskevi, Attiki (Greece); Davazoglou, D., E-mail: d.davazoglou@imel.demokritos.gr [Institute of Nanoscience and Nanotechnology, Department of Microelectronics, National Center for Scientific Research Demokritos, POB 60228, 15310 Agia Paraskevi, Attiki (Greece)

    2015-09-30

    Graphical abstract: In this work we perform successful engineering of the anode of organic photovoltaics based on poly(3-hexylthiophene):[6,6]-phenyl butyric acid methyl ester blends by using metal oxide transport layers exhibiting shallow gap states which act as a barrier-free path for hole transport toward the anode. - Highlights: • Interface engineering of the anode. • Organic photovoltaics (OPVs). • Shallow gap states. • Barrier-free hole transport. • Design rules for interface engineering in OPVs. - Abstract: In this work we use hydrogen deposited molybdenum and tungsten oxides (chemically described as H:MO{sub x}x ≤ 3 where M = Mo or W) to control the energetics at the anode of bulk heterojunction (BHJ) organic photovoltaics (OPVs) based on poly(3-hexylthiophene):[6,6]-phenyl butyric acid methyl ester (P3HT:PC{sub 71}BM) blends. Significantly improved current densities and open circuit voltages were achieved as a result of improved hole transport from the P3HT highest occupied molecular orbital (HOMO) toward indium tin oxide (ITO) anode. This was attributed to the formation of shallow gap states in these oxides which are located just below the Fermi level and above the polymer HOMO and thus may act as a barrier-free path for the extraction of holes. Consequently, these states can be used for controlling the energetic structure of the anode of OPVs. By using ultraviolet photoelectron spectroscopy it was found that dependent on the deposition conditions these gap states and work function of the metal oxides may be tailored to contribute to the precise alignment of the HOMO of the organic semiconductor (OSC) with the Fermi level of the anode electrode resulting in further enhancement of the device performance.

  17. Direct Measurements of Island Growth and Step-Edge Barriers in Colloidal Epitaxy

    KAUST Repository

    Ganapathy, R.

    2010-01-21

    Epitaxial growth, a bottom-up self-assembly process for creating surface nano- and microstructures, has been extensively studied in the context of atoms. This process, however, is also a promising route to self-assembly of nanometer- and micrometer-scale particles into microstructures that have numerous technological applications. To determine whether atomic epitaxial growth laws are applicable to the epitaxy of larger particles with attractive interactions, we investigated the nucleation and growth dynamics of colloidal crystal films with single-particle resolution. We show quantitatively that colloidal epitaxy obeys the same two-dimensional island nucleation and growth laws that govern atomic epitaxy. However, we found that in colloidal epitaxy, step-edge and corner barriers that are responsible for film morphology have a diffusive origin. This diffusive mechanism suggests new routes toward controlling film morphology during epitaxy.

  18. Growth of high purity semiconductor epitaxial layers by liquid phase ...

    Indian Academy of Sciences (India)

    Unknown

    semiconductor materials in high purity form by liquid phase epitaxy (LPE) technique. Various possible sources of impurities in such ... reference to the growth of GaAs layers. The technique of growing very high purity layers ... the inner walls of the gas lines and (e) the containers for storing, handling and cleaning of the mate-.

  19. Hard gap in epitaxial semiconductor-superconductor nanowires

    DEFF Research Database (Denmark)

    Chang, W.; Albrecht, S. M.; Jespersen, T. S.

    2015-01-01

    a continuum of subgap states---a situation that nullifies topological protection. Here, we report a hard superconducting gap induced by proximity effect in a semiconductor, using epitaxial Al-InAs superconductor-semiconductor nanowires. The hard gap, along with favorable material properties and gate...

  20. Selenidation of epitaxial silicene on ZrB2

    NARCIS (Netherlands)

    Wiggers, F. B.; Yamada-Takamura, Y.; Kovalgin, A. Y.; de Jong, M. P.

    2018-01-01

    The deposition of elemental Se on epitaxial silicene on ZrB2 thin films was investigated with synchrotron-based core-level photoelectron spectroscopy and low-energy electron diffraction. The deposition of Se at room temperature caused the appearance of Si 2p peaks with chemical shifts of n × 0.51 ±

  1. Removable polytetrafluoroethylene template based epitaxy of ferroelectric copolymer thin films

    Science.gov (United States)

    Xia, Wei; Chen, Qiusong; Zhang, Jian; Wang, Hui; Cheng, Qian; Jiang, Yulong; Zhu, Guodong

    2018-04-01

    In recent years ferroelectric polymers have shown their great potentials in organic and flexible electronics. To meet the requirements of high-performance and low energy consumption of novel electronic devices and systems, structural and electrical properties of ferroelectric polymer thin films are expected to be further optimized. One possible way is to realize epitaxial growth of ferroelectric thin films via removable high-ordered polytetrafluoroethylene (PTFE) templates. Here two key parameters in epitaxy process, annealing temperature and applied pressure, are systematically studied and thus optimized through structural and electrical measurements of ferroelectric copolymer thin films. Experimental results indicate that controlled epitaxial growth is realized via suitable combination of both parameters. Annealing temperature above the melting point of ferroelectric copolymer films is required, and simultaneously moderate pressure (around 2.0 MPa here) should be applied. Over-low pressure (around 1.0 MPa here) usually results in the failure of epitaxy process, while over-high pressure (around 3.0 MPa here) often results in residual of PTFE templates on ferroelectric thin films.

  2. Electrical properties of epitaxially grown VOx thin films

    NARCIS (Netherlands)

    Rata, A.D.; Chezan, A.R; Presura, C.N.; Hibma, T

    2003-01-01

    High quality VOx thin films on MgO(100) substrates were prepared and studied from the structural and electronic point of view. Epitaxial growth was confirmed by RHEED and XRD techniques. The oxygen content of VOx thin films as a function of oxygen flux was determined using RBS. The upper and lower

  3. Manipulation of Dirac cones in metal-intercalated epitaxial graphene

    Science.gov (United States)

    Wang, Cai-Zhuang; Kim, Minsung; Tringides, Michael; Ho, Kai-Ming

    Graphene is one of the most attractive materials from both fundamental and practical points of view due to its characteristic Dirac cones. The electronic property of graphene can be modified through the interaction with substrate or another graphene layer as illustrated in few-layer epitaxial graphene. Recently, metal intercalation became an effective method to manipulate the electronic structure of graphene by modifying the coupling between the constituent layers. In this work, we show that the Dirac cones of epitaxial graphene can be manipulated by intercalating rare-earth metals. We demonstrate that rare-earth metal intercalated epitaxial graphene has tunable band structures and the energy levels of Dirac cones as well as the linear or quadratic band dispersion can be controlled depending on the location of the intercalation layer and density. Our results could be important for applications and characterizations of the intercalated epitaxial graphene. Supported by the U.S. DOE-BES under Contract No. DE-AC02-07CH11358.

  4. High purity liquid phase epitaxial gallium arsenide nuclear radiation detector

    International Nuclear Information System (INIS)

    Alexiev, D.; Butcher, K.S.A.

    1991-11-01

    Surface barrier radiation detector made from high purity liquid phase epitaxial gallium arsenide wafers have been operated as X- and γ-ray detectors at various operating temperatures. Low energy isotopes are resolved including 241 Am at 40 deg C. and the higher gamma energies of 235 U at -80 deg C. 15 refs., 1 tab., 6 figs

  5. GaN:Co epitaxial layers grown by MOVPE

    Czech Academy of Sciences Publication Activity Database

    Šimek, P.; Sedmidubský, D.; Klímová, K.; Mikulics, M.; Maryško, Miroslav; Veselý, M.; Jurek, Karel; Sofer, Z.

    2015-01-01

    Roč. 44, Mar (2015), 62-68 ISSN 0022-0248 R&D Projects: GA ČR GA13-20507S Institutional support: RVO:68378271 Keywords : doping * metalorganic vapor phase epitaxy * cobalt * gallium compounds * nitrides * magnetic materials spintronics Subject RIV: CA - Inorganic Chemistry Impact factor: 1.462, year: 2015

  6. Single-event burnout of epitaxial bipolar transistors

    Energy Technology Data Exchange (ETDEWEB)

    Kuboyama, S.; Sugimoto, K.; Shugyo, S.; Matsuda, S. [National Space Development Agency of Japan, Tsukuba, Ibaraki (Japan); Hirao, T. [Japan Atomic Energy Research Inst., Takasaki, Gunma (Japan)

    1998-12-01

    Single-Event Burnout (SEB) of bipolar junction transistors (BJTs) has been observed nondestructively. It was revealed that all the NPN BJTs, including small signal transistors, with thinner epitaxial layers were inherently susceptible to the SEB phenomenon. It was demonstrated that several design parameters of BJTs were responsible for SEB susceptibility. Additionally, destructive and nondestructive modes of SEB were identified.

  7. Single-event burnout of epitaxial bipolar transistors

    Energy Technology Data Exchange (ETDEWEB)

    Kuboyama, Satoshi; Sugimoto, Kenji; Matsuda, Sumio [National Space Development Agency of Japan, Ysukuba, Ibaraki (Japan); Hirao, Toshio

    1998-10-01

    Single-event burnout (SEB) of bipolar junction transistors (BJTs) has been observed nondestructively. It was revealed that all the NPN BJTs including small signal transistors with thinner epitaxial layer were inherently susceptible to the SEB phenomenon. It was demonstrated that several design parameters of BJTs were responsible for SEB susceptibility. Additionally, destructive and nondestructive modes of SEB were identified. (author)

  8. Concurrent bandgap narrowing and polarization enhancement in epitaxial ferroelectric nanofilms

    Czech Academy of Sciences Publication Activity Database

    Tyunina, Marina; Yao, L.; Chvostová, Dagmar; Dejneka, Alexandr; Kocourek, Tomáš; Jelínek, Miroslav; Trepakov, Vladimír; van Dijken, S.

    2015-01-01

    Roč. 16, č. 2 (2015), 026002 ISSN 1468-6996 R&D Projects: GA ČR GAP108/12/1941 Institutional support: RVO:68378271 Keywords : epitaxial growth * ferroelectric nanofilms Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 3.433, year: 2015

  9. Giant inelastic tunneling in epitaxial graphene mediated by localized states

    NARCIS (Netherlands)

    Cervenka, J.; Ruit, van de K.; Flipse, C.F.J.

    2010-01-01

    Local electronic structures of nanometer-sized patches of epitaxial graphene and its interface layer with SiC(0001) have been studied by atomically resolved scanning tunneling microscopy and spectroscopy. Localized states belonging to the interface layer of a graphene/SiC system show to have

  10. Strain-induced properties of epitaxial VOx thin films

    NARCIS (Netherlands)

    Rata, AD; Hibma, T

    We have grown VOx thin films on different substrates in order to investigate the influence of epitaxial strain on the transport properties. We found that the electric conductivity is much larger for films grown under compressive strain on SrTiO3 substrates, as compared to bulk material and VOx films

  11. Conductivity of epitaxial and CVD graphene with correlated line defects

    DEFF Research Database (Denmark)

    Radchenko, T. M.; Shylau, Artsem; Zozoulenko, I. V.

    2014-01-01

    Transport properties of single-layer graphene with correlated one-dimensional defects are studied theoretically using the computational model within the time-dependent real-space Kubo-Greenwood formalism. Such defects are present in epitaxial graphene, comprising atomic terraces and steps due...

  12. Epitaxial growth with pulsed deposition: Submonolayer scaling and Villain instability

    DEFF Research Database (Denmark)

    Hinnemann, Berit; Hinrichsen, H.; Wolf, D.E.

    2003-01-01

    It has been observed experimentally that under certain conditions, pulsed laser deposition (PLD) produces smoother surfaces than ordinary molecular beam epitaxy (MBE). So far, the mechanism leading to the improved quality of surfaces in PLD is not yet fully understood. In the present work, we...

  13. DETERMINATION OF SULFUR DIOXIDE, NITROGEN OXIDES, AND CARBON DIOXIDE IN EMISSIONS FROM ELECTRIC UTILITY PLANTS BY ALKALINE PERMANGANATE SAMPLING AND ION CHROMATOGRAPHY

    Science.gov (United States)

    A manual 24-h integrated method for determining SO2, NOx, and CO2 in emissions from electric utility plants was developed and field tested downstream from an SO2 control system. Samples were collected in alkaline potassium permanganate solution contained in restricted-orifice imp...

  14. Atomic layer deposition of Al{sub 2}O{sub 3} for single electron transistors utilizing Pt oxidation and reduction

    Energy Technology Data Exchange (ETDEWEB)

    McConnell, Michael S., E-mail: mmcconn5@nd.edu; Schneider, Louisa C.; Karbasian, Golnaz; Rouvimov, Sergei; Orlov, Alexei O.; Snider, Gregory L. [Department of Electrical Engineering, University of Notre Dame, 275 Fitzpatrick Hall, Notre Dame, Indiana 46556 (United States)

    2016-01-15

    This work describes the fabrication of single electron transistors using electron beam lithography and atomic layer deposition to form nanoscale tunnel transparent junctions of alumina (Al{sub 2}O{sub 3}) on platinum nanowires using either water or ozone as the oxygen precursor and trimethylaluminum as the aluminum precursor. Using room temperature, low frequency conductance measurements between the source and drain, it was found that devices fabricated using water had higher conductance than devices fabricated with ozone. Subsequent annealing caused both water- and ozone-based devices to increase in conductance by more than 2 orders of magnitude. Furthermore, comparison of devices at low temperatures (∼4 K) showed that annealed devices displayed much closer to the ideal behavior (i.e., constant differential conductance) outside of the Coulomb blockade region and that untreated devices showed nonlinear behavior outside of the Coulomb blockade region (i.e., an increase in differential conductance with source-drain voltage bias). Transmission electron microscopy cross-sectional images showed that annealing did not significantly change device geometry, but energy dispersive x-ray spectroscopy showed an unusually large amount of oxygen in the bottom platinum layer. This suggests that the atomic layer deposition process results in the formation of a thin platinum surface oxide, which either decomposes or is reduced during the anneal step, resulting in a tunnel barrier without the in-series native oxide contribution. Furthermore, the difference between ozone- and water-based devices suggests that ozone promotes atomic layer deposition nucleation by oxidizing the surface but that water relies on physisorption of the precursors. To test this theory, devices were exposed to forming gas at room temperature, which also reduces platinum oxide, and a decrease in resistance was observed, as expected.

  15. On the density of states of disordered epitaxial graphene

    International Nuclear Information System (INIS)

    Davydov, S. Yu.

    2015-01-01

    The study is concerned with two types of disordered epitaxial graphene: (i) graphene with randomly located carbon vacancies and (ii) structurally amorphous graphene. The former type is considered in the coherent potential approximation, and for the latter type, a model of the density of states is proposed. The effects of two types of substrates, specifically, metal and semiconductor substrates are taken into account. The specific features of the density of states of epitaxial graphene at the Dirac point and the edges of the continuous spectrum are analyzed. It is shown that vacancies in epitaxial graphene formed on the metal substrate bring about logarithmic nulling of the density of states of graphene at the Dirac point and the edges of the continuous spectrum. If the Dirac point corresponds to the middle of the band gap of the semiconductor substrate, the linear trend of the density of states to zero in the vicinity of the Dirac point in defect-free graphene transforms into a logarithmic decrease in the presence of vacancies. In both cases, the graphene-substrate interaction is assumed to be weak (quasi-free graphene). In the study of amorphous epitaxial graphene, a simple model of free amorphous graphene is proposed as the initial model, in which account is taken of the nonzero density of states at the Dirac point, and then the interaction of the graphene sheet with the substrate is taken into consideration. It is shown that, near the Dirac point, the quadratic behavior of the density of states of free amorphous graphene transforms into a linear dependence for amorphous epitaxial graphene. In the study, the density of states of free graphene corresponds to the low-energy approximation of the electron spectrum

  16. Epitaxial effects in thin films of high-Tc cuprates with the K2NiF4 structure

    Science.gov (United States)

    Naito, Michio; Sato, Hisashi; Tsukada, Akio; Yamamoto, Hideki

    2018-03-01

    La2-xSrxCuO4 (LSCO) and La2-xBaxCuO4 (LBCO) have been recognized as the archetype materials of "hole-doped" high-Tc superconductors. Their crystal structures are relatively simple with a small number of constituent cation elements. In addition, the doping level can be varied by the chemical substitution over a wide range enough to obtain the full spectrum of doping-dependent electronic and magnetic properties. These attractive features have dedicated many researchers to thin-film growth of LSCO and LBCO. The critical temperature (Tc) of LSCO and LBCO is sensitive to strain as manifested by a positive pressure coefficient of Tc in bulk samples. In general, films are strained if they are grown on lattice-mismatched substrates (epitaxial strain). Early attempts (before 1997) at the growth of LSCO and LBCO films resulted in depressed Tc below 30 K as they were grown on a commonly used SrTiO3 substrate (in-plane lattice parameter asub = 3.905 Å): the in-plane lattice parameters of LSCO and LBCO are ≤3.80 Å, and hence tensile epitaxial strain is introduced. The situation was changed by the use of LaSrAlO4 substrates with a slightly shorter in-plane lattice constant (asub = 3.756 Å). On LaSrAlO4 substrates, the Tc reaches 45 K in La1.85Sr0.15CuO4, 47 K in La1.85Ba0.15CuO4, and 56 K in ozone-oxidized La2CuO4+δ films, substantially higher than the Tc's of the bulk compounds. The Tc increase in La1.85Sr0.15CuO4 films on LaSrAlO4 and decrease on SrTiO3 are semi-quantitatively in accord with the phenomenological estimations based on the anisotropic strain coefficients of Tc (dTc/dεi). In this review article, we describe the growth and properties of films of cuprates having the K2NiF4 structure, mainly focusing on the increase/decrease of Tc by epitaxial strain and quasi-stable phase formation by epitaxial stabilization. We further extract the structural and/or physical parameters controlling Tc toward microscopic understanding of the variation of Tc by epitaxial strain.

  17. Highly sensitive amperometric sensing of nitrite utilizing bulk-modified MnO2 decorated Graphene oxide nanocomposite screen-printed electrodes

    International Nuclear Information System (INIS)

    Jaiswal, Nandita; Tiwari, Ida; Foster, Christopher W.; Banks, Craig E.

    2017-01-01

    A screen-printed amperometric sensor based on a carbon ink bulk-modified with MnO 2 decorated graphene oxide (MnO 2 /GO-SPE) nanocomposite was investigated for its ability to serve as a sensor towards nitrite. The composite was prepared by simple ultrasonication and reflux methodology and was characterized by FT-IR spectroscopy, transmission electron microscopy, scanning electron microscopy, Raman spectroscopy, atomic force microscopy and electrochemically using cyclic voltammetry, chronoamperometry and differential pulse voltammetry techniques. The MnO 2 /GO-SPE was found to exhibit an electro-catalytic activity for the electrochemical oxidation of nitrite in 0.1 M phosphate buffer solution (pH 7.4). The electrochemical oxidation of nitrite occurs at +0.55 V (Vs. Ag/AgCl) with a limit of detection (3σ) found to be 0.09 μM and with two linear ranges of 0.1 μM to 1 μM and 1 μM to 1000 μM with sensitivities of 1.25 μAμM −1 cm −2 and 0.005 μAμM −1 cm −2 respectively. Furthermore, the MnO 2 /GO-SPE showed an excellent anti-interference ability towards a range of commonly encountered electroactive species and metal ions. Additionally, the fabricated MnO 2 /GO-SPE nitrite sensor presented an excellent selectivity, reproducibility and stability. The presented study widens the scope of applications of graphene-based nanocomposite materials for on-site monitoring of nitrite.

  18. Strategy utilized for assessing baseline risks to human health from K-65 and metal oxide residues stored at the Fernald Site

    International Nuclear Information System (INIS)

    Harmon, J.E.; Janke, R.C.

    1995-01-01

    The U.S. Department of Energy (DOE) is responsible for cleanup activities at the Fernald Environmental Management Project (FEMP) site in southwestern Ohio. The 425-hectare site consists of a former 55-hectare Production Area, an adjacent Waste Storage Area and various support facilities. From 1952 until 1989, the FEMP processed uranium into metallic open-quotes feedclose quotes materials for other DOE facilities in the nation's defense program. In accordance with the Comprehensive Environmental Response, Compensation and Liability Act (CERCLA), the FEMP site is currently listed on the National Priorities List (NPL). To facilitate an expeditious cleanup effort, environmental issues associated with site cleanup are being managed under five operable units. This paper summarizes the risk assessment strategy employed to determine baseline human health risks associated with K-65 and metal oxide residues currently stored in Operable Unit 4. The K-65 and metal oxide residues were generated during the 1950s as a result of the extraction of uranium from uranium-bearing ores and concentrates. These residues are currently stored within Operable Unit 4 in concrete silos. Silos I and 2 contain approximately 6,120 cubic meters [m 3 ] (8,005 cubic yards [yd 3 ]) of K-65 residues, while silos 3 contains approximately 3890 m 3 (5,080 yd 3 ) of cold metal oxides. These concrete silos are beyond their design life and require remedial action. The risk assessment conducted for Operable Unit 4 constitutes the first detailed human health risk assessment to be approved by the Environmental Protection Agency (EPA) for the CERCLA clean-up effort at the FEMP Site. This paper discusses the FEMP's use of a Risk Information Quality Objective process in concert with the traditional risk assessment approach to determine baseline risk to human health and the environment posed by Operable Unit 4. A summary of the baseline risks to human health is also presented

  19. Strategy utilized for assessing baseline risks to human health from K-65 and metal oxide residues stored at the Fernald Site

    Energy Technology Data Exchange (ETDEWEB)

    Harmon, J.E. [FERMCO, Cincinnati, OH (United States). Fernald Environmental Management Project; Janke, R.C.

    1995-04-01

    The U.S. Department of Energy (DOE) is responsible for cleanup activities at the Fernald Environmental Management Project (FEMP) site in southwestern Ohio. The 425-hectare site consists of a former 55-hectare Production Area, an adjacent Waste Storage Area and various support facilities. From 1952 until 1989, the FEMP processed uranium into metallic {open_quotes}feed{close_quotes} materials for other DOE facilities in the nation`s defense program. In accordance with the Comprehensive Environmental Response, Compensation and Liability Act (CERCLA), the FEMP site is currently listed on the National Priorities List (NPL). To facilitate an expeditious cleanup effort, environmental issues associated with site cleanup are being managed under five operable units. This paper summarizes the risk assessment strategy employed to determine baseline human health risks associated with K-65 and metal oxide residues currently stored in Operable Unit 4. The K-65 and metal oxide residues were generated during the 1950s as a result of the extraction of uranium from uranium-bearing ores and concentrates. These residues are currently stored within Operable Unit 4 in concrete silos. Silos I and 2 contain approximately 6,120 cubic meters [m{sup 3}] (8,005 cubic yards [yd{sup 3}]) of K-65 residues, while silos 3 contains approximately 3890 m{sup 3} (5,080 yd{sup 3}) of cold metal oxides. These concrete silos are beyond their design life and require remedial action. The risk assessment conducted for Operable Unit 4 constitutes the first detailed human health risk assessment to be approved by the Environmental Protection Agency (EPA) for the CERCLA clean-up effort at the FEMP Site. This paper discusses the FEMP`s use of a Risk Information Quality Objective process in concert with the traditional risk assessment approach to determine baseline risk to human health and the environment posed by Operable Unit 4. A summary of the baseline risks to human health is also presented.

  20. Oxygen rocking aqueous batteries utilizing reversible topotactic oxygen insertion/extraction in iron-based perovskite oxides Ca1-xLaxFeO3-δ

    Science.gov (United States)

    Hibino, Mitsuhiro; Kimura, Takeshi; Suga, Yosuke; Kudo, Tetsuichi; Mizuno, Noritaka

    2012-08-01

    Developments of large-scale energy storages with not only low cost and high safety but also abundant metals are significantly demanded. While lithium ion batteries are the most successful method, they cannot satisfy all conditions. Here we show the principle of novel lithium-free secondary oxygen rocking aqueous batteries, in which oxygen shuttles between the cathode and anode composed of iron-based perovskite-related oxides Ca0.5La0.5FeOz (2.5 topotactic oxygen extraction and reinsertion during discharge and charge processes.

  1. [Utilization of a transferred arc-plasma rotating furnace to melt and found oxide mixtures at around 2000 degrees C (presentation of the film VULCANO)].

    Science.gov (United States)

    Cognet, G; Laffont, G; Jegou, C; Pierre, J; Journeau, C; Sudreau, F; Roubaud, A

    1999-03-01

    Unless security measures are taken, a hypothetical accident resulting from the loss of the cooling circuit in a pressurized water nuclear reactor could cause the heart of the reactor to melt forming a bath, called the corium, mainly composed of uranium, zirconium and iron oxides as well as the structural steel. This type of situation would be similar to the Three Mile Island accident in 1979. In order to limit the consequences of such an accident, the Atomic Energy Commission has implemented a large study program [1] to improve our understanding of corium behavior and determine solutions to stabilize it and avoid its propagation outside the unit. The VULCANO installation was designed in order to perform the trials using real materials which are indispensable to study all the phenomena involved. A film on the VULCANO trials was presented at the Henri Moissan commemorative session organized by the French National Academy of Pharmacy. The rotating furnace used to melt and found the mixture simulating the corium is a direct descendant of the pioneer work by Henri Moissan. An electrical arc is directed at the center of the load to melt which is maintained against the walls by centrifugal force. After six high-temperature trials performed with compositions without uranium oxide, the first trial with real corium showed that the magma spread rather well, a result which is quite favorable for cooling.

  2. The physics of epitaxial graphene on SiC(0001)

    International Nuclear Information System (INIS)

    Kageshima, H; Hibino, H; Tanabe, S

    2012-01-01

    Various physical properties of epitaxial graphene grown on SiC(0001) are studied. First, the electronic transport in epitaxial bilayer graphene on SiC(0001) and quasi-free-standing bilayer graphene on SiC(0001) is investigated. The dependences of the resistance and the polarity of the Hall resistance at zero gate voltage on the top-gate voltage show that the carrier types are electron and hole, respectively. The mobility evaluated at various carrier densities indicates that the quasi-free-standing bilayer graphene shows higher mobility than the epitaxial bilayer graphene when they are compared at the same carrier density. The difference in mobility is thought to come from the domain size of the graphene sheet formed. To clarify a guiding principle for controlling graphene quality, the mechanism of epitaxial graphene growth is also studied theoretically. It is found that a new graphene sheet grows from the interface between the old graphene sheets and the SiC substrate. Further studies on the energetics reveal the importance of the role of the step on the SiC surface. A first-principles calculation unequivocally shows that the C prefers to release from the step edge and to aggregate as graphene nuclei along the step edge rather than be left on the terrace. It is also shown that the edges of the existing graphene more preferentially absorb the isolated C atoms. For some annealing conditions, experiments can also provide graphene islands on SiC(0001) surfaces. The atomic structures are studied theoretically together with their growth mechanism. The proposed embedded island structures actually act as a graphene island electronically, and those with zigzag edges have a magnetoelectric effect. Finally, the thermoelectric properties of graphene are theoretically examined. The results indicate that reducing the carrier scattering suppresses the thermoelectric power and enhances the thermoelectric figure of merit. The fine control of the Fermi energy position is thought to

  3. Direct Patterning of Oxides by Pulsed Laser Stencil Deposition

    NARCIS (Netherlands)

    te Riele, P.M.

    2008-01-01

    This thesis describes a detailed study of the application of stencil technology in the patterning of epitaxial oxide thin films by pulsed laser deposition (PLD). Stencil patterning has been applied in thin film sub-micron patterning of metals successfully for decades since it has several advantages

  4. The initial growth of complex oxides : study and manipulation

    NARCIS (Netherlands)

    Rijnders, Augustinus J.H.M.

    2001-01-01

    In this thesis, the initial growth stage, i.e., nucleation and growth of the first few unit cell layers, of complex oxides was studied in real time during pulsed laser deposition (PLD). These studies were performed at their optimal epitaxial growth conditions, i.e., high temperature and high oxygen

  5. Oriented growth of thin films of samarium oxide by MOCVD

    Indian Academy of Sciences (India)

    Unknown

    Very thin layers of rare earth oxides, such as Sm2O3 and epitaxial Gd2O3, grown by thermal ... As the inorganic salts of the lanthanides, such as their halides, are ... sodium hydroxide, followed by the addition of ethanolic. 1,10-phenanthroline ...

  6. Composition of MBE-grown iron oxide films

    NARCIS (Netherlands)

    Voogt, F.C; Hibma, T; Smulders, P.J M; Niesen, L

    A wide range of iron oxides have been grown epitaxially on MgO(100) substrates using a dual beam technique in which the deposited iron is oxidised by a beam of NO2 particles. At high fluxes magnetite (Fe3-deltaO4) phases with compositions between near-stoichiometric magnetite (Fe3O4, delta = 0) and

  7. 3C-SiC epitaxial films deposited by reactive magnetron sputtering: Growth, characterization and device development

    Energy Technology Data Exchange (ETDEWEB)

    Wahab, Qamar ul.

    1994-01-01

    Epitaxial 3C-SiC films were grown on silicon substrates by reactive magnetron sputtering of pure Si target in a mixed Ar-CH[sub 4] discharges. Films were grown on Si(001), and 4 degrees off-oriented (001) substrates. Epitaxial 3C-SiC films with sharp interface to Si substrates have been grown at substrate temperatures [<=] 900 degrees C. Above 900 degrees C interfacial reaction starts resulting in a rough SiC/Si interface. The carbon content as well as the crystalline structure was also found to be strongly dependent on CH[sub 4] partial pressure (PCH[sub 4]) and stoichiometric composition can only be obtained in a narrow PCH[sub 4] range. Films grown on Si(001) substrates contained anti domain boundaries as evident by cross-sectional transmission electron microscopy (XTEM). Films grown on (111)-oriented substrates were epitaxial at 850 degrees C but contained double positioning domains as determined by X-ray diffraction analysis and XTEM. High quality films were obtained on 4 degrees off-oriented Si(001) substrates at T[sub s]=850 degrees C and PCH[sub 4]=0.6 mTorr. Films grown on off-oriented substrates showed atomically sharp interface to Si and also a smooth top surface. SiO[sub 2] layer grown on such films showed atomically sharp oxide/film interface. Also the growth of epitaxial Si films on top of SiC films was realized. Au-Schottky diodes fabricated on (001)-oriented 3C-SiC films showed good rectification with a leakage current density = 4 [mu]A cm[sup -2], a breakdown voltage of -15 V, an ideality factor of 1.27 and a barrier height of 1.04 eV. Metal oxide semiconductor structures were fabricated by thermally grown SiO[sub 2] on (111)-oriented SiC films. The capacitance-voltage measurements showed the accumulation, depletion and deep depletion region in the C-V curve. The interface trap densities were 3-7 x 10[sup 11] cm[sup -2] eV[sup -1]. Finally 3C-SiC/Si heterojunction diodes processed showed good rectification and the diode had a breakdown at -110 V.

  8. 3C-SiC epitaxial films deposited by reactive magnetron sputtering: Growth, characterization and device development

    International Nuclear Information System (INIS)

    Wahab, Qamar ul.

    1994-01-01

    Epitaxial 3C-SiC films were grown on silicon substrates by reactive magnetron sputtering of pure Si target in a mixed Ar-CH 4 discharges. Films were grown on Si(001), and 4 degrees off-oriented (001) substrates. Epitaxial 3C-SiC films with sharp interface to Si substrates have been grown at substrate temperatures ≤ 900 degrees C. Above 900 degrees C interfacial reaction starts resulting in a rough SiC/Si interface. The carbon content as well as the crystalline structure was also found to be strongly dependent on CH 4 partial pressure (PCH 4 ) and stoichiometric composition can only be obtained in a narrow PCH 4 range. Films grown on Si(001) substrates contained anti domain boundaries as evident by cross-sectional transmission electron microscopy (XTEM). Films grown on (111)-oriented substrates were epitaxial at 850 degrees C but contained double positioning domains as determined by X-ray diffraction analysis and XTEM. High quality films were obtained on 4 degrees off-oriented Si(001) substrates at T s =850 degrees C and PCH 4 =0.6 mTorr. Films grown on off-oriented substrates showed atomically sharp interface to Si and also a smooth top surface. SiO 2 layer grown on such films showed atomically sharp oxide/film interface. Also the growth of epitaxial Si films on top of SiC films was realized. Au-Schottky diodes fabricated on (001)-oriented 3C-SiC films showed good rectification with a leakage current density = 4 μA cm -2 , a breakdown voltage of -15 V, an ideality factor of 1.27 and a barrier height of 1.04 eV. Metal oxide semiconductor (MOS) structures were fabricated by thermally grown SiO 2 on (111)-oriented SiC films. The capacitance-voltage measurements showed the accumulation, depletion and deep depletion region in the C-V curve. The interface trap densities were 3-7 x 10 11 cm -2 eV -1 . Finally 3C-SiC/Si heterojunction diodes processed showed good rectification and the diode had a breakdown at -110 V. 59 refs, figs, tabs

  9. Oxygen rocking aqueous batteries utilizing reversible topotactic oxygen insertion/extraction in iron-based perovskite oxides Ca(1-x)La(x)FeO(3-δ).

    Science.gov (United States)

    Hibino, Mitsuhiro; Kimura, Takeshi; Suga, Yosuke; Kudo, Tetsuichi; Mizuno, Noritaka

    2012-01-01

    Developments of large-scale energy storages with not only low cost and high safety but also abundant metals are significantly demanded. While lithium ion batteries are the most successful method, they cannot satisfy all conditions. Here we show the principle of novel lithium-free secondary oxygen rocking aqueous batteries, in which oxygen shuttles between the cathode and anode composed of iron-based perovskite-related oxides Ca(0.5)La(0.5)FeO(z) (2.5 ≤ z ≤ 2.75 and 2.75 ≤ z ≤ 3.0). Compound Ca(0.5)La(0.5)FeO(z) can undergo two kinds of reduction and reoxidation of Fe(4+)/Fe(3+) and Fe(3+)/Fe(2+), that are accompanied by reversible and repeatable topotactic oxygen extraction and reinsertion during discharge and charge processes.

  10. Biogas Production from Local Biomass Feedstock in the Mekong Delta and Its Utilization for a Direct Internal Reforming Solid Oxide Fuel Cell

    Directory of Open Access Journals (Sweden)

    Yusuke Shiratori

    2017-05-01

    Full Text Available Fuel-flexible solid oxide fuel cell (SOFC technologies are presently under study in a Vietnam-Japan international joint research project. The purpose of this project is to develop and demonstrate an SOFC-incorporated energy circulation system for the sustainable development of the Mekong Delta region. Lab-scale methane fermentation experiments in this study with a mixture of biomass feedstock collected in the Mekong Delta (shrimp pond sludge, bagasse, and molasses from sugar production recorded biogas production yield over 400 L kgVS−1 with H2S concentration below 50 ppm level. This real biogas was directly supplied to an SOFC without any fuel processing such as desulfurization, methane enrichment and pre-reforming, and stable power generation was achieved by applying paper-structured catalyst (PSC technology.

  11. Process Demonstration For Lunar In Situ Resource Utilization-Molten Oxide Electrolysis (MSFC Independent Research and Development Project No. 5-81)

    Science.gov (United States)

    Curreri, P. A.; Ethridge, E. C.; Hudson, S. B.; Miller, T. Y.; Grugel, R. N.; Sen, S.; Sadoway, D. R.

    2006-01-01

    The purpose of this Focus Area Independent Research and Development project was to conduct, at Marshall Space Flight Center, an experimental demonstration of the processing of simulated lunar resources by the molten oxide electrolysis process to produce oxygen and metal. In essence, the vision was to develop two key technologies, the first to produce materials (oxygen, metals, and silicon) from lunar resources and the second to produce energy by photocell production on the Moon using these materials. Together, these two technologies have the potential to greatly reduce the costs and risks of NASA s human exploration program. Further, it is believed that these technologies are the key first step toward harvesting abundant materials and energy independent of Earth s resources.

  12. Charge collection properties of heavily irradiated epitaxial silicon detectors

    International Nuclear Information System (INIS)

    Kramberger, G.; Cindro, V.; Dolenc, I.; Fretwurst, E.; Lindstroem, G.; Mandic, I.; Mikuz, M.; Zavrtanik, M.

    2005-01-01

    Detectors processed on epitaxial silicon seem to be a viable solution for the extreme radiation levels in the innermost layers of tracking detectors at upgraded LHC (SLHC). A set of epitaxial pad detectors of 50 and 75μm thicknesses (ρ=50Ωcm) was irradiated with 24GeV/c protons and reactor neutrons up to equivalent fluences of 10 16 cm -2 . Charge collection for minimum ionizing electrons from a 90 Sr source was measured using a charge sensitive preamplifier and a 25ns shaping circuit. The dependence of collected charge on annealing time and operation temperature was studied. Results were used to predict the performance of fine pitch pixel detectors proposed for SLHC

  13. Charge collection properties of heavily irradiated epitaxial silicon detectors

    Energy Technology Data Exchange (ETDEWEB)

    Kramberger, G. [Institute Jozef Stefan, Jamova 39, SI-1111 Ljubljana (Slovenia)]. E-mail: Gregor.Kramberger@ijs.si; Cindro, V. [Institute Jozef Stefan, Jamova 39, SI-1111 Ljubljana (Slovenia); Dolenc, I. [Institute Jozef Stefan, Jamova 39, SI-1111 Ljubljana (Slovenia); Fretwurst, E. [University of Hamburg, Institut fuer Experimentalphysik, Luruper Chaussee 149, D-22761 Hamburg (Germany); Lindstroem, G. [University of Hamburg, Institut fuer Experimentalphysik, Luruper Chaussee 149, D-22761 Hamburg (Germany); Mandic, I. [Institute Jozef Stefan, Jamova 39, SI-1111 Ljubljana (Slovenia); Mikuz, M. [Institute Jozef Stefan, Jamova 39, SI-1111 Ljubljana (Slovenia); Zavrtanik, M. [Institute Jozef Stefan, Jamova 39, SI-1111 Ljubljana (Slovenia)

    2005-12-01

    Detectors processed on epitaxial silicon seem to be a viable solution for the extreme radiation levels in the innermost layers of tracking detectors at upgraded LHC (SLHC). A set of epitaxial pad detectors of 50 and 75{mu}m thicknesses ({rho}=50{omega}cm) was irradiated with 24GeV/c protons and reactor neutrons up to equivalent fluences of 10{sup 16}cm{sup -2}. Charge collection for minimum ionizing electrons from a {sup 90}Sr source was measured using a charge sensitive preamplifier and a 25ns shaping circuit. The dependence of collected charge on annealing time and operation temperature was studied. Results were used to predict the performance of fine pitch pixel detectors proposed for SLHC.

  14. Quantum Hall effect in epitaxial graphene with permanent magnets.

    Science.gov (United States)

    Parmentier, F D; Cazimajou, T; Sekine, Y; Hibino, H; Irie, H; Glattli, D C; Kumada, N; Roulleau, P

    2016-12-06

    We have observed the well-kown quantum Hall effect (QHE) in epitaxial graphene grown on silicon carbide (SiC) by using, for the first time, only commercial NdFeB permanent magnets at low temperature. The relatively large and homogeneous magnetic field generated by the magnets, together with the high quality of the epitaxial graphene films, enables the formation of well-developed quantum Hall states at Landau level filling factors v = ±2, commonly observed with superconducting electro-magnets. Furthermore, the chirality of the QHE edge channels can be changed by a top gate. These results demonstrate that basic QHE physics are experimentally accessible in graphene for a fraction of the price of conventional setups using superconducting magnets, which greatly increases the potential of the QHE in graphene for research and applications.

  15. Microwave impedance of epitaxial high-temperature superconductor films

    International Nuclear Information System (INIS)

    Melkov, G.A.; Malyshev, V.Yu.; Bagada, A.V.

    1995-01-01

    In the 3 cm band dependences of the epitaxial HTS film surface resistance on the magnitude of ac and dc magnetic fields have been measured. YBa 2 Cu 3 O 7-σ films on sapphire were investigated. It was established that alternating magnetic field produces a stronger impact on the surface resistance than dc field. To explain experimental results the assumption is made that a HTS film is not an ideal superconductor and consists of series-connected sections of various types: sections of an ideal superconductor, sections of low and large resistance intragranular Josephson junctions, shunted by the ideal superconductor, and finally, sections of intergranular Josephson junctions few for epitaxial films. In these conditions the dependences of the surface resistance on dc magnetic field are caused by Abrikosov's vortices moving in ideal superconductive sections, and dependences on the amplitude of ac magnetic field are caused by switching of large resistance junctions to a low resistance state

  16. Quantum Hall effect in epitaxial graphene with permanent magnets

    Science.gov (United States)

    Parmentier, F. D.; Cazimajou, T.; Sekine, Y.; Hibino, H.; Irie, H.; Glattli, D. C.; Kumada, N.; Roulleau, P.

    2016-12-01

    We have observed the well-kown quantum Hall effect (QHE) in epitaxial graphene grown on silicon carbide (SiC) by using, for the first time, only commercial NdFeB permanent magnets at low temperature. The relatively large and homogeneous magnetic field generated by the magnets, together with the high quality of the epitaxial graphene films, enables the formation of well-developed quantum Hall states at Landau level filling factors v = ±2, commonly observed with superconducting electro-magnets. Furthermore, the chirality of the QHE edge channels can be changed by a top gate. These results demonstrate that basic QHE physics are experimentally accessible in graphene for a fraction of the price of conventional setups using superconducting magnets, which greatly increases the potential of the QHE in graphene for research and applications.

  17. On the kinetic barriers of graphene homo-epitaxy

    International Nuclear Information System (INIS)

    Zhang, Wei; Yu, Xinke; Xie, Ya-Hong; Cahyadi, Erica; Ratsch, Christian

    2014-01-01

    The diffusion processes and kinetic barriers of individual carbon adatoms and clusters on graphene surfaces are investigated to provide fundamental understanding of the physics governing epitaxial growth of multilayer graphene. It is found that individual carbon adatoms form bonds with the underlying graphene whereas the interaction between graphene and carbon clusters, consisting of 6 atoms or more, is very weak being van der Waals in nature. Therefore, small carbon clusters are quite mobile on the graphene surfaces and the diffusion barrier is negligibly small (∼6 meV). This suggests the feasibility of high-quality graphene epitaxial growth at very low growth temperatures with small carbon clusters (e.g., hexagons) as carbon source. We propose that the growth mode is totally different from 3-dimensional bulk materials with the surface mobility of carbon hexagons being the highest over graphene surfaces that gradually decreases with further increase in cluster size

  18. Magnetic Field Enhanced Superconductivity in Epitaxial Thin Film WTe2.

    Science.gov (United States)

    Asaba, Tomoya; Wang, Yongjie; Li, Gang; Xiang, Ziji; Tinsman, Colin; Chen, Lu; Zhou, Shangnan; Zhao, Songrui; Laleyan, David; Li, Yi; Mi, Zetian; Li, Lu

    2018-04-25

    In conventional superconductors an external magnetic field generally suppresses superconductivity. This results from a simple thermodynamic competition of the superconducting and magnetic free energies. In this study, we report the unconventional features in the superconducting epitaxial thin film tungsten telluride (WTe 2 ). Measuring the electrical transport properties of Molecular Beam Epitaxy (MBE) grown WTe 2 thin films with a high precision rotation stage, we map the upper critical field H c2 at different temperatures T. We observe the superconducting transition temperature T c is enhanced by in-plane magnetic fields. The upper critical field H c2 is observed to establish an unconventional non-monotonic dependence on temperature. We suggest that this unconventional feature is due to the lifting of inversion symmetry, which leads to the enhancement of H c2 in Ising superconductors.

  19. Novel Dilute Bismide, Epitaxy, Physical Properties and Device Application

    Directory of Open Access Journals (Sweden)

    Lijuan Wang

    2017-02-01

    Full Text Available Dilute bismide in which a small amount of bismuth is incorporated to host III-Vs is the least studied III-V compound semiconductor and has received steadily increasing attention since 2000. In this paper, we review theoretical predictions of physical properties of bismide alloys, epitaxial growth of bismide thin films and nanostructures, surface, structural, electric, transport and optic properties of various binaries and bismide alloys, and device applications.

  20. Misfit dislocations in (001) Cu/(111) Ag epitaxial bilayers

    Energy Technology Data Exchange (ETDEWEB)

    Vook, R W; Chao, S S

    1979-01-01

    Two sets of elongated epitaxial (111) Ag islands rotated by 90/sup 0/ with respect to each other were observed to grow on (001) Cu substrates. In addition, two sets of edge misfit dislocations lay parallel to (110) Cu and (110) Cu or equivalently along (110) Ag and (112) Ag. Their Burgers vectors were determined, together with the elastic strains in these two directions. The island elongation was interpreted as arising from a lower strain energy in the preferred direction of growth.

  1. Liquid phase epitaxial growth of heterostructured hierarchical MOF thin films

    KAUST Repository

    Chernikova, Valeriya; Shekhah, Osama; Spanopoulos, Ioannis; Trikalitis, Pantelis N.; Eddaoudi, Mohamed

    2017-01-01

    Precise control of epitaxial growth of MOF-on-MOF thin films, for ordered hierarchical tbo-type structures is demonstrated. The heterostructured MOF thin film was fabricated by successful sequential deposition of layers from two different MOFs. The 2-periodic layers, edge-transitive 4,4-square lattices regarded as supermolecular building layers, were commendably cross-linked using a combination of inorganic/organic and organic pillars.

  2. Optical effects induced by epitaxial tension in lead titanate

    Czech Academy of Sciences Publication Activity Database

    Dejneka, Alexandr; Chvostová, Dagmar; Pacherová, Oliva; Kocourek, Tomáš; Jelínek, Miroslav; Tyunina, Marina

    2018-01-01

    Roč. 112, č. 3 (2018), s. 1-5, č. článku 031111. ISSN 0003-6951 R&D Projects: GA ČR GA15-13778S; GA ČR GA15-15123S Institutional support: RVO:68378271 Keywords : epitaxy * inorganic compounds * optical properties * ferroelectric materials * optical metrology Subject RIV: BM - Solid Matter Physics ; Magnetism OBOR OECD: Condensed matter physics (including formerly solid state physics , supercond.) Impact factor: 3.411, year: 2016

  3. Liquid phase epitaxial growth of heterostructured hierarchical MOF thin films

    KAUST Repository

    Chernikova, Valeriya

    2017-05-10

    Precise control of epitaxial growth of MOF-on-MOF thin films, for ordered hierarchical tbo-type structures is demonstrated. The heterostructured MOF thin film was fabricated by successful sequential deposition of layers from two different MOFs. The 2-periodic layers, edge-transitive 4,4-square lattices regarded as supermolecular building layers, were commendably cross-linked using a combination of inorganic/organic and organic pillars.

  4. Coupled quantum dot-ring structures by droplet epitaxy

    International Nuclear Information System (INIS)

    Somaschini, C; Bietti, S; Koguchi, N; Sanguinetti, S

    2011-01-01

    The fabrication, by pure self-assembly, of GaAs/AlGaAs dot-ring quantum nanostructures is presented. The growth is performed via droplet epitaxy, which allows for the fine control, through As flux and substrate temperature, of the crystallization kinetics of nanometer scale metallic Ga reservoirs deposited on the surface. Such a procedure permits the combination of quantum dots and quantum rings into a single, multi-functional, complex quantum nanostructure.

  5. Epitaxial growth mechanisms of graphene and effects of substrates

    OpenAIRE

    Özçelik, V. Ongun; Cahangirov, S.; Ciraci, S.

    2012-01-01

    The growth process of single layer graphene with and without substrate is investigated using ab initio, finite temperature molecular dynamic calculations within density functional theory. An understanding of the epitaxial graphene growth mechanisms in the atomic level is provided by exploring the transient stages which occur at the growing edges of graphene. These stages are formation and collapse of large carbon rings together with the formation and healing of Stone-Wales like pentagon-hepta...

  6. Epitaxial growth on porous GaAs substrates

    Czech Academy of Sciences Publication Activity Database

    Grym, Jan; Nohavica, Dušan; Gladkov, Petar; Hulicius, Eduard; Pangrác, Jiří; Piksová, K.

    2013-01-01

    Roč. 16, č. 1 (2013), s. 59-64 ISSN 1631-0748 R&D Projects: GA ČR GAP102/10/1201; GA ČR GAP108/10/0253 Institutional support: RVO:67985882 ; RVO:68378271 Keywords : Electrochemical etching * Porous semiconductors * Epitaxial growth * GaAs Subject RIV: BH - Optics, Masers, Lasers; JA - Electronics ; Optoelectronics, Electrical Engineering (FZU-D) Impact factor: 1.483, year: 2013

  7. Strain-induced phenomenon in complex oxide thin films

    Science.gov (United States)

    Haislmaier, Ryan

    to deposit single monolayers of SrO and TiO2 is utilized to build the RP film structure over a time period of 5 hours. This is the first time that a thin film RP phase has been grown using hybrid MBE, where an a stable control over the fluxes is demonstrated during relatively long time periods of growth, which advantageously facilitates the synthesis of high-quality RP materials with excellent structural and chemical homogeneity. Additionally, this work demonstrates some major advancements in optical second harmonic generation (SHG) characterization techniques of ferroelectric thin film materials. The SHG characterization techniques developed here proved to be the 'bread-and-butter' for most of the work performed in this thesis, providing a powerful tool for identifying the existence of strain-induced ferroelectric phases, including their temperature dependence and polar symmetry. The work presented in this dissertation will hopefully provide a preliminary road map for future hybrid MBE growers, scientists and researchers, to develop and investigate epitaxial strain and heterostructure layering induced phenomena in other complex oxide systems.

  8. Interaction of GaN epitaxial layers with atomic hydrogen

    Energy Technology Data Exchange (ETDEWEB)

    Losurdo, M.; Giangregorio, M.M.; Capezzuto, P.; Bruno, G.; Namkoong, G.; Doolittle, W.A.; Brown, A.S

    2004-08-15

    GaN surface passivation processes are still under development and among others hydrogen treatments are investigated. In this study, we use non-destructive optical and electrical probes such as spectroscopic ellipsometry (SE) and surface potential Kelvin probe microscopy (SP-KPM) in conjunction with non-contact atomic force microscopy (AFM) for the study of the different reactivity of Ga-polar and N-polar GaN epitaxial layers with atomic hydrogen. The GaN epitaxial layers are grown by molecular beam epitaxy on sapphire (0 0 0 1) substrates, and GaN and AlN buffer layers are used to grow N-polar and Ga-polar films, respectively. The atomic hydrogen is produced by a remote rf (13.56 MHz) H{sub 2} plasma in order to rule out any ion bombardment of the GaN surface and make the interaction chemical. It is found that the interaction of GaN surfaces with atomic hydrogen depends on polarity, with N-polar GaN exhibiting greater reactivity. Furthermore, it is found that atomic hydrogen is effective in the passivation of grain boundaries and surface defects states.

  9. Interaction of GaN epitaxial layers with atomic hydrogen

    International Nuclear Information System (INIS)

    Losurdo, M.; Giangregorio, M.M.; Capezzuto, P.; Bruno, G.; Namkoong, G.; Doolittle, W.A.; Brown, A.S.

    2004-01-01

    GaN surface passivation processes are still under development and among others hydrogen treatments are investigated. In this study, we use non-destructive optical and electrical probes such as spectroscopic ellipsometry (SE) and surface potential Kelvin probe microscopy (SP-KPM) in conjunction with non-contact atomic force microscopy (AFM) for the study of the different reactivity of Ga-polar and N-polar GaN epitaxial layers with atomic hydrogen. The GaN epitaxial layers are grown by molecular beam epitaxy on sapphire (0 0 0 1) substrates, and GaN and AlN buffer layers are used to grow N-polar and Ga-polar films, respectively. The atomic hydrogen is produced by a remote rf (13.56 MHz) H 2 plasma in order to rule out any ion bombardment of the GaN surface and make the interaction chemical. It is found that the interaction of GaN surfaces with atomic hydrogen depends on polarity, with N-polar GaN exhibiting greater reactivity. Furthermore, it is found that atomic hydrogen is effective in the passivation of grain boundaries and surface defects states

  10. Electronic properties of epitaxial 6H silicon carbide

    International Nuclear Information System (INIS)

    Wessels, B.W.; Gatos, H.C.

    1977-01-01

    The electrical conductivity and Hall coefficient were measured in the temperature range from 78 to 900 K for n-type epitaxially grown 6H silicon carbide. A many-valley model of the conduction band was used in the analysis of electron concentration as a function of temperature. From this analysis, the density of states mass to the free electron mass ratio per ellipsoid was calculated to be 0.45. It was estimated that the constant energy surface of the conduction band consists of three ellipsoids. The ionization energy of the shallowest nitrogen donor was found to be 105 meV, when the valley-orbit interaction was taken into account. The electron scattering mechanisms in the epitaxial layers were analyzed and it was shown that the dominant mechanism limiting electron mobility at high temperatures is inter-valley scattering and at low temperatures (200K), impurity and space charge scattering. A value of 360 cm 2 /V sec was calculated for the maximum room temperature Hall mobility expected for electrons in pure 6H SiC. The effect of epitaxial growth temperature on room temperature Hall mobility was also investigated. (author)

  11. Silicon epitaxy on textured double layer porous silicon by LPCVD

    International Nuclear Information System (INIS)

    Cai Hong; Shen Honglie; Zhang Lei; Huang Haibin; Lu Linfeng; Tang Zhengxia; Shen Jiancang

    2010-01-01

    Epitaxial silicon thin film on textured double layer porous silicon (DLPS) was demonstrated. The textured DLPS was formed by electrochemical etching using two different current densities on the silicon wafer that are randomly textured with upright pyramids. Silicon thin films were then grown on the annealed DLPS, using low-pressure chemical vapor deposition (LPCVD). The reflectance of the DLPS and the grown silicon thin films were studied by a spectrophotometer. The crystallinity and topography of the grown silicon thin films were studied by Raman spectroscopy and SEM. The reflectance results show that the reflectance of the silicon wafer decreases from 24.7% to 11.7% after texturing, and after the deposition of silicon thin film the surface reflectance is about 13.8%. SEM images show that the epitaxial silicon film on textured DLPS exhibits random pyramids. The Raman spectrum peaks near 521 cm -1 have a width of 7.8 cm -1 , which reveals the high crystalline quality of the silicon epitaxy.

  12. Utility of soluble lectin-like oxidized low-density lipoprotein receptor-1 (sLOX-1) in the postmortem diagnosis of ischemic heart disease.

    Science.gov (United States)

    Takasu, Shojiro; Matsumoto, Sari; Kanto, Yuko; Iwadate, Kimiharu

    2018-04-01

    Ischemic heart disease (IHD) is a major cause of death in developed countries. Postmortem IHD diagnosis using biochemical markers is difficult because of the postmortem changes. In the present study, we investigated the utility of soluble lectin-like low-density lipoprotein receptor-1 (sLOX-1) in body fluids obtained from forensic autopsy cases. We measured pericardial fluid, urine, and serum sLOX-1 levels; these samples were obtained from medicolegal autopsy cases (n = 149, postmortem interval fluid and urine of patients with acute IHD had higher sLOX-1 levels (p fluid and urine samples obtained postmortem are useful markers of acute IHD. Copyright © 2018 Elsevier Ltd and Faculty of Forensic and Legal Medicine. All rights reserved.

  13. Growth and characterization of ultrathin epitaxial MnO film on Ag(001)

    Science.gov (United States)

    Kundu, Asish K.; Menon, Krishnakumar S. R.

    2016-07-01

    We present here a comprehensive growth procedure to obtain a well-ordered MnO(001) ultrathin film on Ag(001) substrate. Depending upon the oxygen partial pressure during the growth, different phases of manganese oxide have been detected by Low Energy Electron Diffraction (LEED) and X-ray Photoelectron Spectroscopic (XPS) studies. A modified growth scheme has been adopted to get well-ordered and stoichiometric MnO(001) ultrathin film. The detailed growth mechanism of epitaxial MnO film on Ag(001) has been studied step by step, using LEED and XPS techniques. Observation of sharp (1 × 1) LEED pattern with a low inelastic background, corresponds to a long-range atomic order with low defect densities indicating the high structural quality of the film. The Mn 2p and Mn 3s core-level spectra confirm the oxidation state as well as the stoichiometry of the grown MnO films. Apart from the growth optimization, the evolution of strain relaxation of the MnO(001) film with film thickness has been explored.

  14. Epitaxial solution deposition of YBa2Cu3O7-6 coated conductors.

    Energy Technology Data Exchange (ETDEWEB)

    Overmyer, Donald L.; Clem, Paul Gilbert; Siegal, Michael P.; Holesinger, Terry A. (Los Alamos National Laboratory, Los Alamos, NM); Voigt, James A.; Richardson, Jacob J.; Dawley, Jeffrey Todd

    2004-11-01

    A variety of solution deposition routes have been reported for processing complex perovskite-based materials such as ferroelectric oxides and conductive electrode oxides, due to ease of incorporating multiple elements, control of chemical stoichiometry, and feasibility for large area deposition. Here, we report an extension of these methods toward long length, epitaxial film solution deposition routes to enable biaxially oriented YBa{sub 2}Cu{sub 3}O{sub 7-{delta}} (YBCO)-coated conductors for superconducting transmission wires. Recent results are presented detailing an all-solution deposition approach to YBCO-coated conductors with critical current densities J{sub c} (77 K) > 1 MA/cm{sup 2} on rolling-assisted, biaxially textured, (200)-oriented Ni-W alloy tapes. Solution-deposition methods such as this approach and those of other research groups appear to have promise to compete with vapor phase methods for superconductor electrical properties, with potential advantages for large area deposition and low cost/kA {center_dot} m of wire.

  15. CBE growth of high-quality ZnO epitaxial layers

    Energy Technology Data Exchange (ETDEWEB)

    El-Shaer, A.; Bakin, A.; Mofor, A.C.; Kreye, M.; Waag, A. [Institute of Semiconductor Technology, Technical University Braunschweig, Hans-Sommer-Strasse 66, 38106 Braunschweig (Germany); Blaesing, J.; Krost, A. [Institute of Experimental Physics, Otto-von-Guericke-University Magdeburg (Germany); Stoimenos, J. [Physics Department, Aristotele University, Univ. Campus, 54006 Thessaloniki (Greece); Pecz, B. [Research Institute for Technical Physics and Materials Science, Hungarian Academy of Sciences, P.O. Box 49, 1525 Budapest (Hungary); Heuken, M. [Aixtron AG, Kackertstr. 15-17, 52072 Aachen (Germany)

    2006-03-15

    Further improvements on the recently reported novel approach to zinc oxide Chemical Beam Epitaxy (CBE) are presented. Hydrogen peroxide is employed as a very efficient novel oxidant. ZnO layers with a thickness from 100 nm to 600 nm were grown on c-sapphire using a MgO buffer. PL-mapping as well as conductivity mapping shows a good uniformity across the 2 inch ZnO-on-sapphire epiwafers. The measured surface roughness for the best layers is as low as 0.26 nm. HRXRD measurements of the obtained ZnO layers show excellent quality of the single crystalline ZnO. The FWHM of the HRXRD (0002) rocking curves measured for the 2 inch ZnO-on-sapphire wafers is as low as 27 arcsec with a very high lateral homogeneity across the whole wafer. Plane view HRTEM observations reveal the very good quality of the ZnO films. The results indicate that CBE is a suitable technique to fabricate ZnO of very high structural quality, which can eventually be used as an alternative to bulk ZnO substrates. (copyright 2006 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  16. Topotactic Metal-Insulator Transition in Epitaxial SrFeOx Thin Films.

    Science.gov (United States)

    Khare, Amit; Shin, Dongwon; Yoo, Tae Sup; Kim, Minu; Kang, Tae Dong; Lee, Jaekwang; Roh, Seulki; Jung, In-Ho; Hwang, Jungseek; Kim, Sung Wng; Noh, Tae Won; Ohta, Hiromichi; Choi, Woo Seok

    2017-10-01

    Topotactic phase transformation enables structural transition without losing the crystalline symmetry of the parental phase and provides an effective platform for elucidating the redox reaction and oxygen diffusion within transition metal oxides. In addition, it enables tuning of the emergent physical properties of complex oxides, through strong interaction between the lattice and electronic degrees of freedom. In this communication, the electronic structure evolution of SrFeO x epitaxial thin films is identified in real-time, during the progress of reversible topotactic phase transformation. Using real-time optical spectroscopy, the phase transition between the two structurally distinct phases (i.e., brownmillerite and perovskite) is quantitatively monitored, and a pressure-temperature phase diagram of the topotactic transformation is constructed for the first time. The transformation at relatively low temperatures is attributed to a markedly small difference in Gibbs free energy compared to the known similar class of materials to date. This study highlights the phase stability and reversibility of SrFeO x thin films, which is highly relevant for energy and environmental applications exploiting the redox reactions. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  17. Fast growth rate of epitaxial β-Ga2O3 by close coupled showerhead MOCVD

    Science.gov (United States)

    Alema, Fikadu; Hertog, Brian; Osinsky, Andrei; Mukhopadhyay, Partha; Toporkov, Mykyta; Schoenfeld, Winston V.

    2017-10-01

    We report on the growth of epitaxial β-Ga2O3 thin films on c-plane sapphire substrates using a close coupled showerhead MOCVD reactor. Ga(DPM)3 (DPM = dipivaloylmethanate), triethylgallium (TEGa) and trimethylgallium (TMGa) metal organic (MO) precursors were used as Ga sources and molecular oxygen was used for oxidation. Films grown from each of the Ga sources had high growth rates, with up to 10 μm/hr achieved using a TMGa precursor at a substrate temperature of 900 °C. As confirmed by X-ray diffraction, the films grown from each of the Ga sources were the monoclinic (2 bar 0 1) oriented β-Ga2O3 phase. The optical bandgap of the films was also estimated to be ∼4.9 eV. The fast growth rate of β-Ga2O3 thin films obtained using various Ga-precursors has been achieved due to the close couple showerhead design of the MOCVD reactor as well as the separate injection of oxygen and MO precursors, preventing the premature oxidation of the MO sources. These results suggest a pathway to overcoming the long-standing challenge of realizing fast growth rates for Ga2O3 using the MOCVD method.

  18. Persistent semi-metal-like nature of epitaxial perovskite CaIrO3 thin films

    International Nuclear Information System (INIS)

    Biswas, Abhijit; Jeong, Yoon Hee

    2015-01-01

    Strong spin-orbit coupled 5d transition metal based ABO 3 oxides, especially iridates, allow tuning parameters in the phase diagram and may demonstrate important functionalities, for example, by means of strain effects and symmetry-breaking, because of the interplay between the Coulomb interactions and strong spin-orbit coupling. Here, we have epitaxially stabilized high quality thin films of perovskite (Pv) CaIrO 3 . Film on the best lattice-matched substrate shows semi-metal-like characteristics. Intriguingly, imposing tensile or compressive strain on the film by altering the underlying lattice-mismatched substrates still maintains semi-metallicity with minute modification of the effective correlation as tensile (compressive) strain results in tiny increases (decreases) of the electronic bandwidth. In addition, magnetoresistance remains positive with a quadratic field dependence. This persistent semi-metal-like nature of Pv-CaIrO 3 thin films with minute changes in the effective correlation by strain may provide new wisdom into strong spin-orbit coupled 5d based oxide physics

  19. Growth of Ca2MnO4 Ruddlesden-Popper structured thin films using combinatorial substrate epitaxy

    International Nuclear Information System (INIS)

    Lacotte, M.; David, A.; Pravarthana, D.; Prellier, W.; Grygiel, C.; Rohrer, G. S.; Salvador, P. A.; Velazquez, M.; Kloe, R. de

    2014-01-01

    The local epitaxial growth of pulsed laser deposited Ca 2 MnO 4 films on polycrystalline spark plasma sintered Sr 2 TiO 4 substrates was investigated to determine phase formation and preferred epitaxial orientation relationships (ORs) for isostructural Ruddlesden-Popper (RP) heteroepitaxy, further developing the high-throughput synthetic approach called Combinatorial Substrate Epitaxy (CSE). Both grazing incidence X-ray diffraction and electron backscatter diffraction patterns of the film and substrate were indexable as single-phase RP-structured compounds. The optimal growth temperature (between 650 °C and 800 °C) was found to be 750 °C using the maximum value of the average image quality of the backscattered diffraction patterns. Films grew in a grain-over-grain pattern such that each Ca 2 MnO 4 grain had a single OR with the Sr 2 TiO 4 grain on which it grew. Three primary ORs described 47 out of 49 grain pairs that covered nearly all of RP orientation space. The first OR, found for 20 of the 49, was the expected RP unit-cell over RP unit-cell OR, expressed as [100][001] film ||[100][001] sub . The other two ORs were essentially rotated from the first by 90°, with one (observed for 17 of 49 pairs) being rotated about the [100] and the other (observed for 10 of 49 pairs) being rotated about the [110] (and not exactly by 90°). These results indicate that only a small number of ORs are needed to describe isostructural RP heteroepitaxy and further demonstrate the potential of CSE in the design and growth of a wide range of complex functional oxides

  20. Epitaxial growth of ZnO layers on (111) GaAs substrates by laser molecular beam epitaxy

    International Nuclear Information System (INIS)

    Ding Jian; Zhang Di; Konomi, Takaharu; Saito, Katsuhiko; Guo Qixin

    2012-01-01

    ZnO layers were grown on (111) GaAs substrates by laser molecular epitaxy at substrate temperatures between 200 and 550 °C. X-ray diffraction analysis revealed that c-axis of ZnO epilayer with a wurtzite structure is perpendicular to the substrate surface. X-ray rocking curves and Raman spectroscopy showed that the crystal quality of ZnO epilayers depends on the substrate temperature during the growth. Strong near-band-edge emission in the UV region without any deep-level emissions was observed from the ZnO epilayers at room temperature. The results indicate that laser molecular beam epitaxy is a promising growth method for obtaining high-quality ZnO layers on (111) GaAs substrates.

  1. Effects of feeding polyphenol-rich winery wastes on digestibility, nitrogen utilization, ruminal fermentation, antioxidant status and oxidative stress in wethers.

    Science.gov (United States)

    Ishida, Kyohei; Kishi, Yosuke; Oishi, Kazato; Hirooka, Hiroyuki; Kumagai, Hajime

    2015-03-01

    Four wethers were used in a 4 × 4 Latin square design experiment to evaluate the availability of two types of winery wastes, winery sediment and grape pomace, as ruminant feeds possessing antioxidant activities. Each wether was assigned to one of the following four treatments: (i) 75 g/kg winery sediment (WS) on a dry matter (DM) basis; (ii) 166 g/kg DM winery grape pomace (WP); (iii) control diet (CD; 17 g/kg DM soybean meal);and (iv) only tall fescue hay (TFH; no additive). Winery sediment and grape pomace had high levels of polyphenols and of radical scavenging activities. Feeding with winery sediment and grape pomace did not negatively affect the intake, but it depressed crude protein (CP) digestibility compared with CD (P = 0.052 and P winery wastes decreased ruminal ammonia production (P = 0.089 and P winery sediment and grape pomace decreased urinary 8-hydroxy-2'-deoxyguanosine (8-OHdG; an index of oxidative damages) excretion per day (P winery sediment and grape pomace could alter nitrogen metabolism and/or act as new antioxidants for ruminants. © 2014 Japanese Society of Animal Science.

  2. Effect of growth temperature on defects in epitaxial GaN film grown by plasma assisted molecular beam epitaxy

    Directory of Open Access Journals (Sweden)

    S. S. Kushvaha

    2014-02-01

    Full Text Available We report the effect of growth temperature on defect states of GaN epitaxial layers grown on 3.5 μm thick GaN epi-layer on sapphire (0001 substrates using plasma assisted molecular beam epitaxy. The GaN samples grown at three different substrate temperatures at 730, 740 and 750 °C were characterized using atomic force microscopy and photoluminescence spectroscopy. The atomic force microscopy images of these samples show the presence of small surface and large hexagonal pits on the GaN film surfaces. The surface defect density of high temperature grown sample is smaller (4.0 × 108 cm−2 at 750 °C than that of the low temperature grown sample (1.1 × 109 cm−2 at 730 °C. A correlation between growth temperature and concentration of deep centre defect states from photoluminescence spectra is also presented. The GaN film grown at 750 °C exhibits the lowest defect concentration which confirms that the growth temperature strongly influences the surface morphology and affects the optical properties of the GaN epitaxial films.

  3. Oxide Interfaces: emergent structure and dynamics

    Energy Technology Data Exchange (ETDEWEB)

    Clarke, Roy [Univ. of Michigan, Ann Arbor, MI (United States)

    2016-08-16

    This Final Report describes the scientific accomplishments that have been achieved with support from grant DE-FG02-06ER46273 during the period 6/1/2012– 5/31/2016. The overall goals of this program were focused on the behavior of epitaxial oxide heterostructures at atomic length scales (Ångstroms), and correspondingly short time-scales (fs -ns). The results contributed fundamentally to one of the currently most active frontiers in condensed matter physics research, namely to better understand the intricate relationship between charge, lattice, orbital and spin degrees of freedom that are exhibited by complex oxide heterostructures. The findings also contributed towards an important technological goal which was to achieve a better basic understanding of structural and electronic correlations so that the unusual properties of complex oxides can be exploited for energy-critical applications. Specific research directions included: probing the microscopic behavior of epitaxial interfaces and buried layers; novel materials structures that emerge from ionic and electronic reconfiguration at epitaxial interfaces; ultrahigh-resolution mapping of the atomic structure of heterointerfaces using synchrotron-based x-ray surface scattering, including direct methods of phase retrieval; using ultrafast lasers to study the effects of transient strain on coherent manipulation of multi-ferroic order parameters; and investigating structural ordering and relaxation processes in real-time.

  4. [Physiological and biochemical characteristics and capacity for polyhydroxyalkanoates synthesis in a glucose-utilizing strain of hydrogen-oxidizing bacteria, Ralstonia eutropha B8562].

    Science.gov (United States)

    Volova, T G; Kozhevnikov, I V; Dolgopolova, Iu B; Trusova, M Iu; Kalacheva, G S; Aref'eva, Iu V

    2005-01-01

    The physiological, biochemical, genetic, and cultural characteristics of the glucose-utilizing mutant strain Ralstonia eutropha B8562 were investigated in comparison with the parent strain R. eutropha B5786. The morphological, cultural, and biochemical characteristics of strain R. eutropha B8562 were similar to those of strain R. eutropha B5786. Genetic analysis revealed differences between the 16S rRNA gene sequences of these strains. The growth characteristics of the mutant using glucose as the sole carbon and energy source were comparable with those of the parent strain grown on fructose. Strain B8562 was characterized by high yields of polyhydroxyalkanoate (PHA) from different carbon sources (CO2, fructose, and glucose). In batch culture with glucose under nitrogen limitation, PHA accumulation reached 90% of dry weight. In PHA, beta-hydroxybutyrate was predominant (over 99 mol %); beta-hydroxyvalerate (0.25-0.72 mol %) and beta-hydroxyhexanoate (0.008-1.5 mol %) were present as minor components. The strain has prospects as a PHA producer on glucose-containing media.

  5. Study on the effective utilization of palm oil (Part 1). Survey of catalysts for oxidative cleavage of palm stearin into mono and dibasic acids with middle carbon chains

    Energy Technology Data Exchange (ETDEWEB)

    Kubota, Yasuhiko; Shiina, Hisako; Mamuro, Hideo; Nakasato, Satoshi; Ooi, T L; S H, Ong A

    1987-05-01

    Production of palm oil in Malaysia increases annually and it is estimated that the production will reach 6 million tons in 1990. Palm stearin which constitutes 20% or more of palm oil is not suitable for the food production, but if it is successfully converted into mono and dibasic acids with middle carbon chains, a big potential demand as excellent lubricating oil is expected. Chemical Engineering Institute, Agency of Industrial Science and Technology studied this matter jointly with Malaysian Institute of Palm Oil. Various metal (II) ion-exchanged zeolites which were considered to be effective catalysts for the above conversion were screened and from the analytical results utilizing signal strength of carboxyl proton, it was found that several catalysts were effective for the formation of carboxylic acids. Furthermore, it was revealed that Mn (II) ion-exchanged zeolite 5A and Co(II)-Cu(II) ion-exchanged zeolite Y were the catalysts suitable for the objective of this study, but a study for finding out the conditions to obtain high conversion ratio is required. (4 tabs, 28 refs)

  6. Simultaneous Voltammetric Determination of Acetaminophen and Isoniazid (Hepatotoxicity-Related Drugs) Utilizing Bismuth Oxide Nanorod Modified Screen-Printed Electrochemical Sensing Platforms.

    Science.gov (United States)

    Mahmoud, Bahaa G; Khairy, Mohamed; Rashwan, Farouk A; Banks, Craig E

    2017-02-07

    To overcome the recent outbreaks of hepatotoxicity-related drugs, a new analytical tool for the continuously determination of these drugs in human fluids is required. Electrochemical-based analytical methods offer an effective, rapid, and simple tool for on-site determination of various organic and inorganic species. However, the design of a sensitive, selective, stable, and reproducible sensor is still a major challenge. In the present manuscript, a facile, one-pot hydrothermal synthesis of bismuth oxide (Bi 2 O 2.33 ) nanostructures (nanorods) was developed. These BiO nanorods were cast onto mass disposable graphite screen-printed electrodes (BiO-SPEs), allowing the ultrasensitive determination of acetaminophen (APAP) in the presence of its common interference isoniazid (INH), which are both found in drug samples. The simultaneous electroanalytical sensing using BiO-SPEs exhibited strong electrocatalytic activity toward the sensing of APAP and INH with an enhanced analytical signal (voltammetric peak) over that achievable at unmodified (bare) SPEs. The electroanalytical sensing of APAP and INH are possible with accessible linear ranges from 0.5 to 1250 μM and 5 to 1760 μM with limits of detection (3σ) of 30 nM and 1.85 μM, respectively. The stability, reproducibility, and repeatability of BiO-SPE were also investigated. The BiO-SPEs were evaluated toward the sensing of APAP and INH in human serum, urine, saliva, and tablet samples. The results presented in this paper demonstrate that BiO-SPEs sensing platforms provide a potential candidate for the accurate determination of APAP and INH within human fluids and pharmaceutical formulations.

  7. Magnetic solid phase extraction of gemfibrozil from human serum and pharmaceutical wastewater samples utilizing a β-cyclodextrin grafted graphene oxide-magnetite nano-hybrid.

    Science.gov (United States)

    Abdolmohammad-Zadeh, Hossein; Talleb, Zeynab

    2015-03-01

    A magnetic solid phase extraction method based on β-cyclodextrin (β-CD) grafted graphene oxide (GO)/magnetite (Fe3O4) nano-hybrid as an innovative adsorbent was developed for the separation and pre-concentration of gemfibrozil prior to its determination by spectrofluorometry. The as-prepared β-CD/GO/Fe3O4 nano-hybrid possesses the magnetism property of Fe3O4 nano-particles that makes it easily manipulated by an external magnetic field. On the other hand, the surface modification of GO by β-CD leads to selective separation of the target analyte from sample matrices. The structure and morphology of the synthesized adsorbent were characterized using powder X-ray diffraction, Fourier transform infrared spectroscopy, and field emission scanning electron microscopy. The experimental factors affecting the extraction/pre-concentration and determination of the analyte were investigated and optimized. Under the optimized experimental conditions, the calibration graph was linear in the range between 10 and 5000 pg mL(-1) with a correlation coefficient of 0.9989. The limit of detection and enrichment factor for gemfibrozil were 3 pg mL(-1) and 100, respectively. The maximum sorption capacity of the adsorbent for gemfibrozil was 49.8 mg g(-1). The method was successfully applied to monitoring gemfibrozil in human serum and pharmaceutical wastewaters samples with recoveries in the range of 96.0-104.0% for the spiked samples. Copyright © 2014 Elsevier B.V. All rights reserved.

  8. Utilization of gases from biomass gasification in a reforming reactor coupled to an integrated planar solid oxide fuel cell: Simulation analysis

    Directory of Open Access Journals (Sweden)

    Costamagna Paola

    2004-01-01

    Full Text Available One of the high-efficiency options currently under study for a rational employment of hydrogen are fuel cells. In this scenario, the integrated planar solid oxide fuel cell is a new concept recently proposed by Rolls-Royce. The basic unit of a modular plant is the so called "strip", containing an electro-chemical reactor formed by a number of IP-SOFC modules, and a reforming reactor. For a better under standing of the behavior of a system of this kind, a simulation model has been set up for both the electrochemical reactor and the reformer; both models follow the approach typically employed in the simulation of chemical reactors, based on the solution of mass and energy balances. In the case of the IP-SOFC electro chemical reactor, the model includes the calculation of the electrical resistance of the stack (that is essentially due to ohmic losses, activation polar is action and mass transport limitations, the mass balances of the gaseous flows, the energy balances of gaseous flows (anodic and cathodic and of the solid. The strip is designed in such a way that the reaction in the reforming reactor is thermally sustained by the sensible heat of the hot air exiting the electrochemical section; this heat exchange is taken into account in the model of the reformer, which includes the energy balance of gaseous flows and of the solid structure. Simulation results are reported and discussed for both the electrochemical reactor in stand-alone configuration (including comparison to experimental data in a narrow range of operating conditions and for the complete strip.

  9. Enhancement of Photovoltaic Performance by Utilizing Readily Accessible Hole Transporting Layer of Vanadium(V) Oxide Hydrate in a Polymer-Fullerene Blend Solar Cell.

    Science.gov (United States)

    Jiang, Youyu; Xiao, Shengqiang; Xu, Biao; Zhan, Chun; Mai, Liqiang; Lu, Xinhui; You, Wei

    2016-05-11

    Herein, a successful application of V2O5·nH2O film as hole transporting layer (HTL) instead of PSS in polymer solar cells is demonstrated. The V2O5·nH2O layer was spin-coated from V2O5·nH2O sol made from melting-quenching sol-gel method by directly using vanadium oxide powder, which is readily accessible and cost-effective. V2O5·nH2O (n ≈ 1) HTL is found to have comparable work function and smooth surface to that of PSS. For the solar cell containing V2O5·nH2O HTL and the active layer of the blend of a novel polymer donor (PBDSe-DT2PyT) and the acceptor of PC71BM, the PCE was significantly improved to 5.87% with a 30% increase over 4.55% attained with PSS HTL. Incorporation of V2O5·nH2O as HTL in the polymer solar cell was found to enhance the crystallinity of the active layer, electron-blocking at the anode and the light-harvest in the wavelength range of 400-550 nm in the cell. V2O5·nH2O HTL improves the charge generation and collection and suppress the charge recombination within the PBDSe-DT2PyT:PC71BM solar cell, leading to a simultaneous enhancement in Voc, Jsc, and FF. The V2O5·nH2O HTL proposed in this work is envisioned to be of great potential to fabricate highly efficient PSCs with low-cost and massive production.

  10. Self-planarized quantum-disks nanowires ultraviolet-B emitter utilizing pendeo-epitaxy

    KAUST Repository

    Janjua, Bilal; Sun, Haiding; Zhao, Chao; Anjum, Dalaver H.; Wu, Feng; Alhamoud, Abdullah; Li, Xiaohang; Albadri, Abdulrahman M; Alyamani, Ahmed Y; El-Desouki , Munir M; Ng, Tien Khee; Ooi, Boon S.

    2017-01-01

    materials. UV-B (280-320 nm) light-emitting diodes (LEDs), which emit at ~303 nm with a narrow full width at half maximum (FWHM) (~20 nm) of the emission spectrum, are demonstrated using a large active region (“active region/NW length-ratio” ~ 50%) embedded

  11. Dislocations limited electronic transport in hydride vapour phase epitaxy grown GaN templates: A word of caution for the epitaxial growers

    Energy Technology Data Exchange (ETDEWEB)

    Chatterjee, Abhishek, E-mail: cabhishek@rrcat.gov.in; Khamari, Shailesh K.; Kumar, R.; Dixit, V. K.; Oak, S. M.; Sharma, T. K., E-mail: tarun@rrcat.gov.in [Semiconductor Physics and Devices Laboratory, Raja Ramanna Centre for Advanced Technology, Indore 452013 (India)

    2015-01-12

    GaN templates grown by hydride vapour phase epitaxy (HVPE) and metal organic vapour phase epitaxy (MOVPE) techniques are compared through electronic transport measurements. Carrier concentration measured by Hall technique is about two orders larger than the values estimated by capacitance voltage method for HVPE templates. It is learnt that there exists a critical thickness of HVPE templates below which the transport properties of epitaxial layers grown on top of them are going to be severely limited by the density of charged dislocations lying at layer-substrate interface. On the contrary MOVPE grown templates are found to be free from such limitations.

  12. Highly piezoelectric BaTiO3 nanorod bundle arrays using epitaxially grown TiO2 nanomaterials

    Science.gov (United States)

    Jang, Seon-Min; Yang, Su Chul

    2018-06-01

    Low-dimensional piezoelectric nanostructures such as nanoparticles, nanotubes, nanowires, nanoribbons and nanosheets have been developed for potential applications as energy harvesters, tunable sensors, functional transducers and low-power actuators. In this study, lead-free BaTiO 3 nanorod bundle arrays (NBA) with highly piezoelectric properties were successfully synthesized on fluorine-doped tin oxide (FTO) substrate via a two-step process consisting of TiO2 epitaxial growth and BaTiO3 conversion. Through the TiO2 epitaxial growth on FTO substrate, (001) oriented TiO2 nanostructures formed vertically-aligned NBA with a bundle diameter of 80 nm and an aspect ratio of six. In particular, chemical etching of the TiO2 NBA was conducted to enlarge the surface area for effective Ba2+ ion diffusion during the perovskite conversion process from TiO2 to BaTiO3. The final structure of perovskite BaTiO3 NBA was found to exhibit a feasible piezoelectric response of 3.56 nm with a clear phase change of 180° from the single BaTiO3 bundle, by point piezoelectric forced microscopy (PFM) analysis. Consequently, highly piezoelectric NBA could be a promising nanostructure for various nanoscale electronic devices.

  13. Highly piezoelectric BaTiO3 nanorod bundle arrays using epitaxially grown TiO2 nanomaterials.

    Science.gov (United States)

    Jang, Seon-Min; Yang, Su Chul

    2018-06-08

    Low-dimensional piezoelectric nanostructures such as nanoparticles, nanotubes, nanowires, nanoribbons and nanosheets have been developed for potential applications as energy harvesters, tunable sensors, functional transducers and low-power actuators. In this study, lead-free BaTiO 3 nanorod bundle arrays (NBA) with highly piezoelectric properties were successfully synthesized on fluorine-doped tin oxide (FTO) substrate via a two-step process consisting of TiO 2 epitaxial growth and BaTiO 3 conversion. Through the TiO 2 epitaxial growth on FTO substrate, (001) oriented TiO 2 nanostructures formed vertically-aligned NBA with a bundle diameter of 80 nm and an aspect ratio of six. In particular, chemical etching of the TiO 2 NBA was conducted to enlarge the surface area for effective Ba 2+ ion diffusion during the perovskite conversion process from TiO 2 to BaTiO 3 . The final structure of perovskite BaTiO 3 NBA was found to exhibit a feasible piezoelectric response of 3.56 nm with a clear phase change of 180° from the single BaTiO 3 bundle, by point piezoelectric forced microscopy (PFM) analysis. Consequently, highly piezoelectric NBA could be a promising nanostructure for various nanoscale electronic devices.

  14. Growth of epitaxial Pt thin films on (0 0 1) SrTiO{sub 3} by rf magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Kahsay, A. [Departament de Física Aplicada i Òptica, Universitat de Barcelona, 08028 Barcelona (Spain); Polo, M.C., E-mail: mcpolo@ub.edu [Departament de Física Aplicada i Òptica, Universitat de Barcelona, 08028 Barcelona (Spain); Ferrater, C.; Ventura, J. [Departament de Física Aplicada i Òptica, Universitat de Barcelona, 08028 Barcelona (Spain); Rebled, J.M. [Departament d’Electrònica, Universitat de Barcelona Institut de Nanociència i Nanotecnologia IN 2UB, 08028 Barcelona (Spain); Varela, M. [Departament de Física Aplicada i Òptica, Universitat de Barcelona, 08028 Barcelona (Spain)

    2014-07-01

    The growth of platinum thin film by rf magnetron sputtering on SrTiO{sub 3}(0 0 1) substrates for oxide based devices was investigated. Platinum films grown at temperatures higher than 750 °C were epitaxial ([1 0 0]Pt(0 0 1)//[1 0 0]STO(0 0 1)), whereas at lower temperatures Pt(1 1 1) films were obtained. The surface morphology of the Pt films showed a strong dependence on the deposition temperature as was revealed by atomic force microscopy (AFM). At elevated temperatures there is a three-dimensional (3D) growth of rectangular atomically flat islands with deep boundaries between them. On the other hand, at low deposition temperatures, a two-dimensional (2D) layered growth was observed. The transition from 2D to 3D growth modes was observed that occurs for temperatures around 450 °C. The obtained epitaxial thin films also formed an atomically sharp interface with the SrTiO{sub 3}(0 0 1) substrate as confirmed by HRTEM.

  15. Tunneling Spectroscopy Studies of Epitaxial Graphene on Silicon Carbide(0001) and Its Interfaces

    Science.gov (United States)

    Sandin, Andreas Axel Tomas

    A two dimensional network of sp2 bonded carbon atoms is defined as graphene. This novel material possesses remarkable electronic properties due to its unique band structure at the vicinity of the Fermi energy. The toughest challenge to bring use of graphene electronic properties in device geometries is that graphene is exceptionally sensitive to its electrical environment for integration into macroscopic system of electrical contacts and substrates. One of the most promising substrates for graphene is the polar surfaces of SiC for the reason it can be grown epitaxially by sublimating Si from the top-most SiC atomic layers. In this work, the interfaces of graphene grown on the Si-terminated polar surface SiC(0001) is studied in UHV using scanning tunneling microscopy (STM), scanning tunneling spectroscopy (STS), low energy electron diffraction (LEED) and auger electron Spectroscopy (AES). STM is used image the graphene surface and interfaces with the capability of atomic resolution. LEED is used to study surface atomic reciprocal ordering and AES is used to determine surface atomic composition during the graphene formation. Interfacial layer (Buffer layer), Single layer graphene and bilayer graphene are identified electronically by means of probing the first member of the image potential derived state. This state is found by dZ/dV spectroscopy in the high energy unoccupied states and is exceptionally sensitive to electrostatic changes to the surface which is detected by energy shifts of image potential states (IPS). This sensitivity is utilized to probe the graphene screening of external electric fields by varying the electric field in the tunneling junction and addresses the fact that charged impurity scattering is likely to be crucial for epitaxial graphene on SiC(0001) when it comes to transport parameters. Shifts of IPS energy position has also been used verify work function changes for identification of several Sodium Intercalation structures of epitaxial

  16. Estimating Utility

    DEFF Research Database (Denmark)

    Arndt, Channing; Simler, Kenneth R.

    2010-01-01

    A fundamental premise of absolute poverty lines is that they represent the same level of utility through time and space. Disturbingly, a series of recent studies in middle- and low-income economies show that even carefully derived poverty lines rarely satisfy this premise. This article proposes a......, with the current approach tending to systematically overestimate (underestimate) poverty in urban (rural) zones.......A fundamental premise of absolute poverty lines is that they represent the same level of utility through time and space. Disturbingly, a series of recent studies in middle- and low-income economies show that even carefully derived poverty lines rarely satisfy this premise. This article proposes...... an information-theoretic approach to estimating cost-of-basic-needs (CBN) poverty lines that are utility consistent. Applications to date illustrate that utility-consistent poverty measurements derived from the proposed approach and those derived from current CBN best practices often differ substantially...

  17. Microstructure of epitaxial YBa2Cu3O7-x thin films grown on LaAlO3 (001)

    International Nuclear Information System (INIS)

    Hsieh, Y.; Siegal, M.P.; Hull, R.; Phillips, J.M.

    1990-01-01

    We report a microstructural investigation of the epitaxial growth of YBa 2 Cu 3 O 7-x (YBCO) thin films on LaAlO 3 (001) substrates using transmission electron microscopy (TEM). Epitaxial films grow with two distinct modes: c epitaxy (YBCO) single crystal with the c (axis normal to the surface and a epitaxy (YBCO) single crystal with the c axis in the interfacial plane), where c epitaxy is the dominant mode grown in all samples 35--200 nm thick. In 35 nm YBCO films annealed at 850 degree C, 97±1% of the surface area is covered by c epitaxy with embedded anisotropic a-epitaxial grains. Quantitative analysis reveals the effect of film thickness and annealing temperature on the density, grain sizes, areal coverages, and anisotropic growth of a epitaxy

  18. Strain induced ionic conductivity enhancement in epitaxial Ce0.9Gd0.1O22d

    DEFF Research Database (Denmark)

    Kant, K. Mohan; Esposito, Vincenzo; Pryds, Nini

    2012-01-01

    -plane ionic conductivity in CGO epitaxial thin films. The ionic conductivity is found to increase with decrease in buffer layer thickness. The tailored ionic conductivity enhancement is explained in terms of close relationships among epitaxy, strain, and ionic conductivity....

  19. Band offsets and growth mode of molecular beam epitaxy grown MgO (111) on GaN (0002) by x-ray photoelectron spectroscopy

    Science.gov (United States)

    Craft, H. S.; Collazo, R.; Losego, M. D.; Mita, S.; Sitar, Z.; Maria, J.-P.

    2007-10-01

    MgO is a proposed dielectric for use as a tunneling barrier in devices integrating GaN and ferroelectric oxides. In this study, we present data regarding the growth mode and band offsets of MgO grown epitaxially on GaN (0002) surfaces using molecular beam epitaxy. Using in situ x-ray photoelectron spectroscopy (XPS) and molecular beam epitaxy, we determine, from sequential growth experiments, that the growth of MgO proceeds via the Volmer-Weber (three-dimensional) mode, and full coalescence of the film does not occur until approximately 12nm of MgO has been deposited. The observation of a three-dimensional growth mode is in agreement with previously published data. For the valence band offset, we find a value of 1.2±0.2eV, which corresponds to a 3.2eV conduction band offset. XPS measurements suggest a chemically abrupt interface and no effect on band lineup due to the slow coalescence behavior.

  20. Band offsets and growth mode of molecular beam epitaxy grown MgO (111) on GaN (0002) by x-ray photoelectron spectroscopy

    International Nuclear Information System (INIS)

    Craft, H. S.; Collazo, R.; Losego, M. D.; Mita, S.; Sitar, Z.; Maria, J.-P.

    2007-01-01

    MgO is a proposed dielectric for use as a tunneling barrier in devices integrating GaN and ferroelectric oxides. In this study, we present data regarding the growth mode and band offsets of MgO grown epitaxially on GaN (0002) surfaces using molecular beam epitaxy. Using in situ x-ray photoelectron spectroscopy (XPS) and molecular beam epitaxy, we determine, from sequential growth experiments, that the growth of MgO proceeds via the Volmer-Weber (three-dimensional) mode, and full coalescence of the film does not occur until approximately 12 nm of MgO has been deposited. The observation of a three-dimensional growth mode is in agreement with previously published data. For the valence band offset, we find a value of 1.2±0.2 eV, which corresponds to a 3.2 eV conduction band offset. XPS measurements suggest a chemically abrupt interface and no effect on band lineup due to the slow coalescence behavior

  1. Upconversion photoluminescence of epitaxial Yb{sup 3+}/Er{sup 3+} codoped ferroelectric Pb(Zr,Ti)O{sub 3} films on silicon substrates

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, Yang, E-mail: zhangy_acd@hotmail.com [IFW Dresden, P.O. Box 270116, D-01171 Dresden (Germany); Kämpfe, Thomas [Institut für Angewandte Physik, TU Dresden, 01062 Dresden (Germany); Bai, Gongxun [Department of Applied Physics, The Hong Kong Polytechnic University, Hong Kong (China); Mietschke, Michael; Yuan, Feifei; Zopf, Michael [IFW Dresden, P.O. Box 270116, D-01171 Dresden (Germany); Abel, Stefan [IBM Research GmbH, Saümerstrasse 4, 8803 Rüschlikon (Switzerland); Eng, Lukas M. [Institut für Angewandte Physik, TU Dresden, 01062 Dresden (Germany); Hühne, Ruben [IFW Dresden, P.O. Box 270116, D-01171 Dresden (Germany); Fompeyrine, Jean [IBM Research GmbH, Saümerstrasse 4, 8803 Rüschlikon (Switzerland); Ding, Fei, E-mail: f.ding@ifw-dresden.de [IFW Dresden, P.O. Box 270116, D-01171 Dresden (Germany); Schmidt, Oliver G. [IFW Dresden, P.O. Box 270116, D-01171 Dresden (Germany); Material Systems for Nanoelectronics, Chemnitz University of Technology, Reichenhainer strasse 70, 09107 Chemnitz (Germany)

    2016-05-31

    Thin films of Yb{sup 3+}/Er{sup 3+} codoped Pb(Zr,Ti)O{sub 3} (PZT:Yb/Er) have been epitaxially grown on the SrTiO{sub 3} buffered Si wafer by pulsed laser deposition. Strong upconversion photoluminescence was observed in the PZT:Yb/Er thin film. Using piezoresponse force microscopy, polar domains in the PZT:Yb/Er film can be reversibly switched with a phase change of 180°. Ferroelectric hysteresis loop shape with a well-saturated response was observed. The epitaxially grown lanthanide-doped PZT on silicon opens up a promising route to the integration of luminescent functional oxides on the silicon platform. - Highlights: • Epitaxial growth of Yb{sup 3+}/Er{sup 3+} codoped Pb(Zr,Ti)O{sub 3} films on SrTiO{sub 3} buffered silicon • Upconversion emissions were obtained from the lanthanide ion doped thin films. • Saturated ferroelectric hysteresis loops were observed. • Polar domains were switched by PFM with a phase change of 180°.

  2. Utilization of sup(32)P fixed in iron oxides and aluminium oxides for soil microbial biomass. Utilizacao de sup(32)P fixado em oxidos de ferro e de aluminio pela biomassa microbiana do solo

    Energy Technology Data Exchange (ETDEWEB)

    Maciel Neto, A; Salcedo, I H [Pernambuco Univ., Recife, PE (Brazil). Dept. de Energia Nuclear

    1991-01-01

    The availability of P fixed in oxi-hydroxides of Fe and of Al for the microbial biomass of a P-deficient soil, was determined following addition of C sources. These oxides were impregnated in a support matrix of filter paper strips and then equilibrated with a P solution (1.5 * 1- sup(-5) M) containing sup(32)P. The strips where then incubated with soil without (control) or with additions of glicose+N (70 hs) or celulose+N (3 weeks), and the CO sub(2) evolved measured. After the incubation, the strips with Fe and Al incubated with soil+glicose had 0.004 and 0.008 {mu}moles cm sup(-2) of P less than the controls, respectively. Biomass activity dessorbed 100 to 200 more P than an exchange resin. The Fe strips incubated with soil+celulose dessorbed 0.002 {mu}moles cm sup(-2) more P than the control, while the Al ones did not differ from the control. In this last case, only about 50% of the cellulose had been decomposed, compared to approximately 85% of the cellulose in contact with the Fe strips. (author).

  3. Epitaxial ternary nitride thin films prepared by a chemical solution method

    Energy Technology Data Exchange (ETDEWEB)

    Luo, Hongmei [Los Alamos National Laboratory; Feldmann, David M [Los Alamos National Laboratory; Wang, Haiyan [TEXAS A& M; Bi, Zhenxing [TEXAS A& M

    2008-01-01

    It is indispensable to use thin films for many technological applications. This is the first report of epitaxial growth of ternary nitride AMN2 films. Epitaxial tetragonal SrTiN2 films have been successfully prepared by a chemical solution approach, polymer-assisted deposition. The structural, electrical, and optical properties of the films are also investigated.

  4. Deposition of HgTe by electrochemical atomic layer epitaxy (EC-ALE)

    CSIR Research Space (South Africa)

    Venkatasamy, V

    2006-04-01

    Full Text Available This paper describes the first instance of HgTe growth by electrochemical atomic layer epitaxy (EC-ALE). EC-ALE is the electrochemical analog of atomic layer epitaxy (ALE) and atomic layer deposition (ALD), all of which are based on the growth...

  5. Characterization of GaN/AlGaN epitaxial layers grown

    Indian Academy of Sciences (India)

    GaN and AlGaN epitaxial layers are grown by a metalorganic chemical vapour deposition (MOCVD) system. The crystalline quality of these epitaxially grown layers is studied by different characterization techniques. PL measurements indicate band edge emission peak at 363.8 nm and 312 nm for GaN and AlGaN layers ...

  6. A critical discussion of the vacancy diffusion model of ion beam induced epitaxial crystallization

    International Nuclear Information System (INIS)

    Heera, V.

    1989-01-01

    A simple vacancy diffusion model of ion beam induced epitaxial crystallization of silicon including divacancy formation is developed. The model reproduces some of the experimental findings, as e.g. the dose rate dependence of the crystallization rate. However, the measured activation energy of the ion beam induced epitaxial crystallization cannot be accounted for by vacancy diffusion alone. (author)

  7. Controllable factors affecting the epitaxial quality of LaCoO3 films ...

    Indian Academy of Sciences (India)

    2018-03-23

    Mar 23, 2018 ... ... larger molecular weight contribute to the improvement of epitaxial quality of LaCoO3 epitaxial film. ..... Research Fund of Education Department of Sichuan Province. (grant nos. 16ZA0133 and 15ZB0108); and the Doctoral.

  8. All-epitaxial Co{sub 2}FeSi/Ge/Co{sub 2}FeSi trilayers fabricated by Sn-induced low-temperature epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Kawano, M.; Ikawa, M.; Arima, K.; Yamada, S.; Kanashima, T.; Hamaya, K., E-mail: hamaya@ee.es.osaka-u.ac.jp [Graduate School of Engineering Science, Osaka University, 1-3 Machikaneyama, Toyonaka 560-8531 (Japan)

    2016-01-28

    We demonstrate low-temperature growth of all-epitaxial Co{sub 2}FeSi/Ge/Co{sub 2}FeSi trilayer structures by developing Sn-induced surfactant-mediated molecular beam epitaxy (SMBE) of Ge on Co{sub 2}FeSi. Despite the growth of a semiconductor on a metal, we verify that the inserted Sn monolayers between Ge and Co{sub 2}FeSi enable to promote the 2D epitaxial growth of Ge up to 5 nm at a T{sub G} of 250 °C. An understanding of the mechanism of the Sn-induced SMBE leads to the achievement of all-epitaxial Co{sub 2}FeSi/Ge/Co{sub 2}FeSi trilayer structures with spin-valve-like magnetization reversals. This study will open a way for vertical-type and high-performance Ge-based spintronics devices.

  9. Improved radiation tolerance of MAPS using a depleted epitaxial layer

    Energy Technology Data Exchange (ETDEWEB)

    Dorokhov, A., E-mail: Andrei.Dorokhov@IReS.in2p3.f [Institut Pluridisciplinaire Hubert Curien (IPHC), 23 rue du loess, BP 28, 67037 Strasbourg (France); Bertolone, G.; Baudot, J.; Brogna, A.S.; Colledani, C.; Claus, G.; De Masi, R. [Institut Pluridisciplinaire Hubert Curien (IPHC), 23 rue du loess, BP 28, 67037 Strasbourg (France); Deveaux, M. [Goethe-Universitaet Frankfurt am Main, Senckenberganlage 31, 60325 Frankfurt am Main (Germany); Doziere, G.; Dulinski, W. [Institut Pluridisciplinaire Hubert Curien (IPHC), 23 rue du loess, BP 28, 67037 Strasbourg (France); Fontaine, J.-C. [Groupe de Recherche en Physique des Hautes Energies (GRPHE), Universite de Haute Alsace, 61, rue Albert Camus, 68093 Mulhouse (France); Goffe, M.; Himmi, A.; Hu-Guo, Ch.; Jaaskelainen, K.; Koziel, M.; Morel, F.; Santos, C.; Specht, M.; Valin, I. [Institut Pluridisciplinaire Hubert Curien (IPHC), 23 rue du loess, BP 28, 67037 Strasbourg (France)

    2010-12-11

    Tracking performance of Monolithic Active Pixel Sensors (MAPS) developed at IPHC (Turchetta, et al., 2001) have been extensively studied (Winter, et al., 2001; Gornushkin, et al., 2002) . Numerous sensor prototypes, called MIMOSA, were fabricated and tested since 1999 in order to optimise the charge collection efficiency and power dissipation, to minimise the noise and to increase the readout speed. The radiation tolerance was also investigated. The highest fluence tolerable for a 10{mu}m pitch device was found to be {approx}10{sup 13}n{sub eq}/cm{sup 2}, while it was only 2x10{sup 12}n{sub eq}/cm{sup 2} for a 20{mu}m pitch device. The purpose of this paper is to show that the tolerance to non-ionising radiation may be extended up to O(10{sup 14}) n{sub eq}/cm{sup 2}. This goal relies on a fabrication process featuring a 15{mu}m thin, high resistivity ({approx}1k{Omega}cm) epitaxial layer. A sensor prototype (MIMOSA-25) was fabricated in this process to explore its detection performance. The depletion depth of the epitaxial layer at standard CMOS voltages (<5V) is similar to the layer thickness. Measurements with m.i.p.s show that the charge collected in the seed pixel is at least twice larger for the depleted epitaxial layer than for the undepleted one, translating into a signal-to-noise ratio (SNR) of {approx}50. Tests after irradiation have shown that this excellent performance is maintained up to the highest fluence considered (3x10{sup 13}n{sub eq}/cm{sup 2}), making evidence of a significant extension of the radiation tolerance limits of MAPS.

  10. Self-Organized Ni Nanocrystal Embedded in BaTiO3 Epitaxial Film

    Directory of Open Access Journals (Sweden)

    Ge FF

    2010-01-01

    Full Text Available Abstract Ni nanocrystals (NCs were embedded in BaTiO3 epitaxial films using the laser molecular beam epitaxy. The processes involving the self-organization of Ni NCs and the epitaxial growth of BaTiO3 were discussed. With the in situ monitoring of reflection high-energy electron diffraction, the nanocomposite films were engineered controllably by the fine alternation of the self-organization of Ni NCs and the epitaxial growth of BaTiO3. The transmission electron microscopy and the X-ray diffraction characterization confirmed that the composite film consists of the Ni NCs layers alternating with the (001/(100-oriented epitaxial BaTiO3 separation layers.

  11. Single-domain epitaxial silicene on diboride thin films

    Energy Technology Data Exchange (ETDEWEB)

    Fleurence, A., E-mail: antoine@jaist.ac.jp; Friedlein, R.; Aoyagi, K.; Yamada-Takamura, Y. [School of Materials Science, Japan Advanced Institute of Science and Technology (JAIST), 1-1 Asahidai, Nomi, Ishikawa 923-1292 (Japan); Gill, T. G. [School of Materials Science, Japan Advanced Institute of Science and Technology (JAIST), 1-1 Asahidai, Nomi, Ishikawa 923-1292 (Japan); London Centre for Nanotechnology, University College London (UCL), London WC1H 0AH (United Kingdom); Department of Chemistry, UCL, London WC1H 0AJ (United Kingdom); Sadowski, J. T. [Center for Functional Nanomaterials, Brookhaven National Laboratory, Upton, New York 11973 (United States); Copel, M.; Tromp, R. M. [IBM Research Division, Thomas J. Watson Research Center, Yorktown Heights, New York 10598 (United States); Hirjibehedin, C. F. [London Centre for Nanotechnology, University College London (UCL), London WC1H 0AH (United Kingdom); Department of Chemistry, UCL, London WC1H 0AJ (United Kingdom); Department of Physics and Astronomy, UCL, London WC1E 6BT (United Kingdom)

    2016-04-11

    Epitaxial silicene, which forms spontaneously on ZrB{sub 2}(0001) thin films grown on Si(111) wafers, has a periodic stripe domain structure. By adsorbing additional Si atoms on this surface, we find that the domain boundaries vanish, and a single-domain silicene sheet can be prepared without altering its buckled honeycomb structure. The amount of Si required to induce this change suggests that the domain boundaries are made of a local distortion of the silicene honeycomb lattice. The realization of a single domain sheet with structural and electronic properties close to those of the original striped state demonstrates the high structural flexibility of silicene.

  12. Large-area, laterally-grown epitaxial semiconductor layers

    Science.gov (United States)

    Han, Jung; Song, Jie; Chen, Danti

    2017-07-18

    Structures and methods for confined lateral-guided growth of a large-area semiconductor layer on an insulating layer are described. The semiconductor layer may be formed by heteroepitaxial growth from a selective growth area in a vertically-confined, lateral-growth guiding structure. Lateral-growth guiding structures may be formed in arrays over a region of a substrate, so as to cover a majority of the substrate region with laterally-grown epitaxial semiconductor tiles. Quality regions of low-defect, stress-free GaN may be grown on silicon.

  13. Magnetic-property changes in epitaxial metal-film sandwiches

    International Nuclear Information System (INIS)

    Brodsky, M.B.

    1982-08-01

    Epitaxial metal-film sandwiches (EMFS) containing Pd or Cr, have been prepared between single-crystal Ag or Au. The modified Pd/Cr show major changes in physical properties. Pd has a stretched lattice parameter in Au-Pd-Au, which combines with a tetragonal distortion to cause exchange enhancements up to 28,000 and spin-fluctuation temperatures of 1 to 10 K. In Au-Cr-Au, Cr takes up the fcc structure, leading to superconductivity due to a high N(E/sub F/). These results are contrasted to data for Ag-Pd-Ag and Ag-Cr-Ag EMFS

  14. Epitaxial Growth of Germanium on Silicon for Light Emitters

    Directory of Open Access Journals (Sweden)

    Chengzhao Chen

    2012-01-01

    Full Text Available This paper describes the role of Ge as an enabler for light emitters on a Si platform. In spite of the large lattice mismatch of ~4.2% between Ge and Si, high-quality Ge layers can be epitaxially grown on Si by ultrahigh-vacuum chemical vapor deposition. Applications of the Ge layers to near-infrared light emitters with various structures are reviewed, including the tensile-strained Ge epilayer, the Ge epilayer with a delta-doping SiGe layer, and the Ge/SiGe multiple quantum wells on Si. The fundamentals of photoluminescence physics in the different Ge structures are discussed briefly.

  15. Surface passivation of liquid phase epitaxial GaAs

    International Nuclear Information System (INIS)

    Alexiev, D.; Butcher, K.S.A.; Mo, L.; Edmondson, M.

    1995-10-01

    Passivation of the liquid phase epitaxial GaAs surface was attempted using aqueous P 2 S 5 -NH 4 OH, (NH 4 ) 2 S x and plasma nitrogenation and hydrogenation. Results indicate that plasma nitrogenation with pretreatment of plasma hydrogenation produced consistent reduction in reverse leakage current at room temperature for all p and n type Schottky diodes. Some diodes showed an order of magnitude improvement in current density. (NH 4 ) 2 S x passivation also results in improved I-V characteristics, though the long term stability of this passivation is questionable. 26 refs., 6 figs

  16. Liquid phase epitaxy of gallium arsenide - a review

    International Nuclear Information System (INIS)

    Alexiev, D.; Edmondson, M.; Butcher, K.S.A.; Tansley, T.

    1992-07-01

    Liquid phase epitaxy of gallium arsenide has been investigated intensively from the late 1960's to the present and has now a special place in the manufacture of wide band, compound semiconductor radiation detectors. Although this particular process appears to have gained prominence in the last three decades, the authors point out that its origins reach back to 1836 when Frankenheim made his first observations. A brief review is presented from a semiconductor applications point of view on how this subject developed. 70 refs., 5 figs

  17. SiC epitaxy growth using chloride-based CVD

    International Nuclear Information System (INIS)

    Henry, Anne; Leone, Stefano; Beyer, Franziska C.; Pedersen, Henrik; Kordina, Olof; Andersson, Sven; Janzén, Erik

    2012-01-01

    The growth of thick epitaxial SiC layers needed for high-voltage, high-power devices is investigated with the chloride-based chemical vapor deposition. High growth rates exceeding 100 μm/h can be obtained, however to obtain device quality epilayers adjustments of the process parameters should be carried out appropriately for the chemistry used. Two different chemistry approaches are compared: addition of hydrogen chloride to the standard precursors or using methyltrichlorosilane, a molecule that contains silicon, carbon and chlorine. Optical and electrical techniques are used to characterize the layers.

  18. Subsurface contributions in epitaxial rare-earth silicides

    Energy Technology Data Exchange (ETDEWEB)

    Luebben, Olaf; Shvets, Igor V. [Centre for Research on Adaptive Nanostructures and Nanodevices (CRANN), School of Physics, Trinity College, Dublin (Ireland); Cerda, Jorge I. [Instituto de Ciencia de Materiales de Madrid, ICMM-CSIC, Cantoblanco, Madrid (Spain); Chaika, Alexander N. [Institute of Solid State Physics, RAS, Chernogolovka (Russian Federation)

    2015-07-01

    Metallic thin films of heavy rare-earth silicides epitaxially grown on Si(111) substrates have been widely studied in recent years because of their appealing properties: unusually low values of the Schottky barrier height, an abrupt interface, and a small lattice mismatch. Previous studies also showed that these silicides present very similar atomic and electronic structures. Here, we examine one of these silicides (Gd{sub 3}Si{sub 5}) using scanning tunneling microscopy (STM) image simulations that go beyond the Tersoff-Hamann approach. These simulations strongly indicate an unusual STM depth sensitivity for this system.

  19. Direct formation of thin films and epitaxial overlayers at low temperatures using a low-energy (10-500 eV) ion beam deposition system

    International Nuclear Information System (INIS)

    Zuhr, R.A.; Alton, G.D.; Appleton, B.R.; Herbots, N.; Noggle, T.S.; Pennycook, S.J.

    1987-01-01

    A low-energy ion beam deposition system has been developed at Oak Ridge National Laboratory and has been applied successfully to the growth of epitaxial films at low temperatures for a number of different elements. The deposition system utilizes the ion source and optics of a commercial ion implantation accelerator. The 35 keV mass- and energy-analyzed ion beam from the accelerator is decelerated in a four-element electrostatic lens assembly to energies between 10 and 500 eV for direct deposition onto a target under UHV conditions. Current densities on the order of 10 μA/cm 2 are achieved with good uniformity over a 1.4 cm diameter spot. The completed films are characterized by Rutherford backscattering, ion channeling, cross-section transmission electron microscopy, and x-ray diffraction. The effects of substrate temperature, ion energy, and substrate cleaning have been studied. Epitaxial overlayers which show good minimum yields by ion channeling (3 to 4%) have been produced at temperatures as low as 375 0 C for Si on Si(100) and 250 0 C for Ge on Ge(100) at growth rates that exceed the solid-phase epitaxy rates at these temperatures by more than an order of magnitude

  20. InGaN/GaN nanowires epitaxy on large-area MoS2 for high-performance light-emitters

    KAUST Repository

    Zhao, Chao; Ng, Tien Khee; Tseng, Chien-Chih; Li, Jun; Shi, Yumeng; Wei, Nini; Zhang, Daliang; Consiglio, Giuseppe Bernardo; Prabaswara, Aditya; Alhamoud, Abdullah Ali; Albadri, Abdulrahman  M.; Alyamani, Ahmed Y.; Zhang, Xixiang; Li, Lain-Jong; Ooi, Boon S.

    2017-01-01

    The recent study of a wide range of layered transition metal dichalcogenides (TMDCs) has created a new era for device design and applications. In particular, the concept of van der Waals epitaxy (vdWE) utilizing layered TMDCs has the potential to broaden the family of epitaxial growth techniques beyond the conventional methods. We report herein, for the first time, the monolithic high-power, droop-free, and wavelength tunable InGaN/GaN nanowire light-emitting diodes (NW-LEDs) on large-area MoS2 layers formed by sulfurizing entire Mo substrates. MoS2 serves as both a buffer layer for high-quality GaN nanowires growth and a sacrificial layer for epitaxy lift-off. The LEDs obtained on nitridated MoS2 via quasi vdWE show a low turn-on voltage of ∼2 V and light output power up to 1.5 mW emitting beyond the “green gap”, without an efficiency droop up to the current injection of 1 A (400 A cm−2), by virtue of high thermal and electrical conductivities of the metal substrates. The discovery of the nitride/layered TMDCs/metal heterostructure platform also ushers in the unparalleled opportunities of simultaneous high-quality nitrides growth for high-performance devices, ultralow-profile optoelectronics, energy harvesting, as well as substrate reusability for practical applications.

  1. InGaN/GaN nanowires epitaxy on large-area MoS2 for high-performance light-emitters

    KAUST Repository

    Zhao, Chao

    2017-05-18

    The recent study of a wide range of layered transition metal dichalcogenides (TMDCs) has created a new era for device design and applications. In particular, the concept of van der Waals epitaxy (vdWE) utilizing layered TMDCs has the potential to broaden the family of epitaxial growth techniques beyond the conventional methods. We report herein, for the first time, the monolithic high-power, droop-free, and wavelength tunable InGaN/GaN nanowire light-emitting diodes (NW-LEDs) on large-area MoS2 layers formed by sulfurizing entire Mo substrates. MoS2 serves as both a buffer layer for high-quality GaN nanowires growth and a sacrificial layer for epitaxy lift-off. The LEDs obtained on nitridated MoS2 via quasi vdWE show a low turn-on voltage of ∼2 V and light output power up to 1.5 mW emitting beyond the “green gap”, without an efficiency droop up to the current injection of 1 A (400 A cm−2), by virtue of high thermal and electrical conductivities of the metal substrates. The discovery of the nitride/layered TMDCs/metal heterostructure platform also ushers in the unparalleled opportunities of simultaneous high-quality nitrides growth for high-performance devices, ultralow-profile optoelectronics, energy harvesting, as well as substrate reusability for practical applications.

  2. Atomic layer epitaxy of ZnO for applications in molecular beam epitaxy growth of GaN and InGaN

    International Nuclear Information System (INIS)

    Godlewski, M.; Szczerbakow, A.; Ivanov, V. Yu.; Barski, A.; Goldys, E.M.

    2000-01-01

    We report the successful atomic layer epitaxy growth of thin ZnO films and their use for GaN and InGaN epitaxy. The properties of ZnO epilayers, obtained by four different procedures, are analysed, as well as of GaN and InGaN films grown on ZnO-coated Si and GaAs by MBE. (author)

  3. Interaction of epitaxial silicene with overlayers formed by exposure to Al atoms and O{sub 2} molecules

    Energy Technology Data Exchange (ETDEWEB)

    Friedlein, R.; Yamada-Takamura, Y. [Japan Advanced Institute of Science and Technology, School of Materials Science, Nomi, Ishikawa 923-1292 (Japan); Van Bui, H.; Wiggers, F. B.; Kovalgin, A. Y.; Jong, M. P. de, E-mail: M.P.deJong@utwente.nl [MESA Institute for Nanotechnology, University of Twente, 7500 AE Enschede (Netherlands)

    2014-05-28

    As silicene is not chemically inert, the study and exploitation of its electronic properties outside of ultrahigh vacuum environments require the use of insulating capping layers. In order to understand if aluminum oxide might be a suitable encapsulation material, we used high-resolution synchrotron photoelectron spectroscopy to study the interactions of Al atoms and O{sub 2} molecules, as well as the combination of both, with epitaxial silicene on thin ZrB{sub 2}(0001) films grown on Si(111). The deposition of Al atoms onto silicene, up to the coverage of about 0.4 Al per Si atoms, has little effect on the chemical state of the Si atoms. The silicene-terminated surface is also hardly affected by exposure to O{sub 2} gas, up to a dose of 4500 L. In contrast, when Al-covered silicene is exposed to the same dose, a large fraction of the Si atoms becomes oxidized. This is attributed to dissociative chemisorption of O{sub 2} molecules by Al atoms at the surface, producing reactive atomic oxygen species that cause the oxidation. It is concluded that aluminum oxide overlayers prepared in this fashion are not suitable for encapsulation since they do not prevent but actually enhance the degradation of silicene.

  4. Depletion-mode vertical Ga2O3 trench MOSFETs fabricated using Ga2O3 homoepitaxial films grown by halide vapor phase epitaxy

    Science.gov (United States)

    Sasaki, Kohei; Thieu, Quang Tu; Wakimoto, Daiki; Koishikawa, Yuki; Kuramata, Akito; Yamakoshi, Shigenobu

    2017-12-01

    We developed depletion-mode vertical Ga2O3 trench metal-oxide-semiconductor field-effect transistors by using n+ contact and n- drift layers. These epilayers were grown on an n+ (001) Ga2O3 single-crystal substrate by halide vapor phase epitaxy. Cu and HfO2 were used for the gate metal and dielectric film, respectively. The mesa width and gate length were approximately 2 and 1 µm, respectively. The devices showed good DC characteristics, with a specific on-resistance of 3.7 mΩ cm2 and clear current modulation. An on-off ratio of approximately 103 was obtained.

  5. Direct Demonstration of the Emergent Magnetism Resulting from the Multivalence Mn in a LaMnO3 Epitaxial Thin Film System

    DEFF Research Database (Denmark)

    Niu, Wei; Liu, Wenqing; Gu, Min

    2018-01-01

    that play a decisive role in the emergence of ferromagnetism in the otherwise antiferromagnetic LaMnO3 thin films are found. Combining spatially resolved electron energy‐loss spectroscopy, X‐ray absorption spectroscopy, and X‐ray magnetic circular dichroism techniques, it is determined unambiguously...... provide a hitherto‐unexplored multivalence state of Mn on the emergent magnetism in undoped manganite epitaxial thin films, such as LaMnO3 and BiMnO3, and shed new light on all‐oxide spintronic devices....

  6. Low-field tunnel-type magnetoresistance properties of polycrystalline and epitaxial La sub 0 sub . sub 6 sub 7 Sr sub 0 sub . sub 3 sub 3 MnO sub 3 thin films

    CERN Document Server

    Shim, I B; Choi, S Y

    2000-01-01

    The low-field tunnel-type magnetoresistance (TMB) properties of sol-gel derived polycrystalline and epitaxial La sub 0 sub . sub 6 sub 7 Sr sub 0 sub . sub 3 sub 3 MnO sub 3 (LSMO) thin films were investigated. The polycrystalline thin films were fabricated on Si (100) with a thermally oxidized SiO sub 2 layer while the epitaxial thin films were grown on LaAlO sub 3 (001) single-crystal substrates. The epitaxial thin films displayed both typical intrinsic colossal magnetoresistance (CMR) and abnormal extrinsic tunnel-type magnetoresistance behaviors. Tunnel-type MR ratio as high as 0.4% were observed in the polycrystalline thin films at a field of 120 Oe at room temperature (300 K) whereas the ratios were less than 0.1% for the epitaxial films in the same field range. The low-field tunnel-type MR of polycrystalline LSMO/SiO sub 2 ?Si (100) thin films originated from the behaviors of the grain-boundary properties.

  7. Epitaxial growth of Si1−xGex alloys and Ge on Si(100) by electron-cyclotron-resonance Ar plasma chemical vapor deposition without substrate heating

    International Nuclear Information System (INIS)

    Ueno, Naofumi; Sakuraba, Masao; Murota, Junichi; Sato, Shigeo

    2014-01-01

    By using electron-cyclotron-resonance (ECR) Ar-plasma chemical vapor deposition (CVD) without substrate heating, the epitaxial growth process of Si 1−x Ge x alloy and Ge films deposited directly on dilute-HF-treated Si(100) was investigated. From the reflection high energy electron diffraction patterns of the deposited Si 1−x Ge x alloy (x = 0.50, 0.75) and Ge films on Si(100), it is confirmed that epitaxial growth can be realized without substrate heating, and that crystallinity degradation at larger film thickness is observed. The X-ray diffraction peak of the epitaxial films reveals the existence of large compressive strain, which is induced by lattice matching with the Si(100) substrate at smaller film thicknesses, as well as strain relaxation behavior at larger film thicknesses. The Ge fraction of Si 1−x Ge x thin film is in good agreement with the normalized GeH 4 partial pressure. The Si 1−x Ge x deposition rate increases with an increase of GeH 4 partial pressure. The GeH 4 partial pressure dependence of partial deposition rates [(Si or Ge fraction) × (Si 1−x Ge x thickness) / (deposition time)] shows that the Si partial deposition rate is slightly enhanced by the existence of Ge. From these results, it is proposed that the ECR-plasma CVD process can be utilized for Ge fraction control in highly-strained heterostructure formation of group IV semiconductors. - Highlights: • Si 1−x Ge x alloy and Ge were epitaxially grown on Si(100) without substrate heating. • Large strain and its relaxation behavior can be observed by X-ray diffraction. • Ge fraction of Si 1−x Ge x is equal to normalized GeH 4 partial pressure. • Si partial deposition rate is slightly enhanced by existence of Ge

  8. Multiattribute Utility Theory without Expected Utility Foundations

    NARCIS (Netherlands)

    Stiggelbout, A.M.; Wakker, P.P.

    1995-01-01

    Methods for determining the form of utilities are needed for the implementation of utility theory in specific decisions. An important step forward was achieved when utility theorists characterized useful parametric families of utilities, and simplifying decompositions of multiattribute utilities.

  9. Multiattribute utility theory without expected utility foundations

    NARCIS (Netherlands)

    Wakker, P.P.; Miyamoto, J.

    1996-01-01

    Methods for determining the form of utilities are needed for the implementation of utility theory in specific decisions. An important step forward was achieved when utility theorists characterized useful parametric families of utilities, and simplifying decompositions of multiattribute utilities.

  10. Mobility-electron density relation probed via controlled oxygen vacancy doping in epitaxial BaSnO3

    Directory of Open Access Journals (Sweden)

    Koustav Ganguly

    2017-05-01

    Full Text Available The recently discovered high room temperature mobility in wide band gap semiconducting BaSnO3 is of exceptional interest for perovskite oxide heterostructures. Critical open issues with epitaxial films include determination of the optimal dopant and understanding the mobility-electron density (μ-n relation. These are addressed here through a transport study of BaSnO3(001 films with oxygen vacancy doping controlled via variable temperature vacuum annealing. Room temperature n can be tuned from 5 × 1019 cm−3 to as low as 2 × 1017 cm−3, which is shown to drive a weak- to strong-localization transition, a 104-fold increase in resistivity, and a factor of 28 change in μ. The data reveal μ ∝ n0.65 scaling over the entire n range probed, important information for understanding mobility-limiting scattering mechanisms.

  11. Growth of Highly Epitaxial YBa2Cu3O7-δ Films from a Simple Propionate-Based Solution

    DEFF Research Database (Denmark)

    Yue, Zhao; Torres, Pol; Tang, Xiao

    2015-01-01

    Intensive investigations have been conducted to develop epitaxial oxide thin films with superior electromagnetic performance by low-cost chemical solution deposition routes. In this paper, a novel propionate-based precursor solution without involving any other additive was proposed and employed...... to grow superconducting YBa2Cu3O7-δ (YBCO) films on LaAlO3 (LAO) single crystals. The precursor solutions are stable with a long shelf life of up to several months. Since the primary compositions are propionates after evaporating the solvent, the toxic reagents and evolved gases during solution synthesis...... and heat treatment can be eliminated completely. In this process, rapid pyrolysis and high conversation rate can also be achieved during growth of YBCO films in comparison with the conventional trifluoroacetate metal organic deposition routes. Remarkably, a 210 nm YBCO film exhibits high superconducting...

  12. Generic process for preparing a crystalline oxide upon a group IV semiconductor substrate

    Science.gov (United States)

    McKee, Rodney A.; Walker, Frederick J.; Chisholm, Matthew F.

    2000-01-01

    A process for growing a crystalline oxide epitaxially upon the surface of a Group IV semiconductor, as well as a structure constructed by the process, is described. The semiconductor can be germanium or silicon, and the crystalline oxide can generally be represented by the formula (AO).sub.n (A'BO.sub.3).sub.m in which "n" and "m" are non-negative integer repeats of planes of the alkaline earth oxides or the alkaline earth-containing perovskite oxides. With atomic level control of interfacial thermodynamics in a multicomponent semiconductor/oxide system, a highly perfect interface between a semiconductor and a crystalline oxide can be obtained.

  13. Multiple growths of epitaxial lift-off solar cells from a single InP substrate

    International Nuclear Information System (INIS)

    Lee, Kyusang; Shiu, Kuen-Ting; Zimmerman, Jeramy D.; Forrest, Stephen R.; Renshaw, Christopher K.

    2010-01-01

    We demonstrate multiple growths of flexible, thin-film indium tin oxide-InP Schottky-barrier solar cells on a single InP wafer via epitaxial lift-off (ELO). Layers that protect the InP parent wafer surface during the ELO process are subsequently removed by selective wet-chemical etching, with the active solar cell layers transferred to a thin, flexible plastic host substrate by cold welding at room temperature. The first- and second-growth solar cells exhibit no performance degradation under simulated Atmospheric Mass 1.5 Global (AM 1.5G) illumination, and have a power conversion efficiency of η p =14.4±0.4% and η p =14.8±0.2%, respectively. The current-voltage characteristics for the solar cells and atomic force microscope images of the substrate indicate that the parent wafer is undamaged, and is suitable for reuse after ELO and the protection-layer removal processes. X-ray photoelectron spectroscopy, reflection high-energy electron diffraction observation, and three-dimensional surface profiling show a surface that is comparable or improved to the original epiready wafer following ELO. Wafer reuse over multiple cycles suggests that high-efficiency; single-crystal thin-film solar cells may provide a practical path to low-cost solar-to-electrical energy conversion.

  14. Anisotropic ferromagnetic behaviors in highly orientated epitaxial NiO-based thin films

    Directory of Open Access Journals (Sweden)

    Yu-Jun Zhang

    2015-07-01

    Full Text Available Antiferromagnetic materials attract a great amount of attention recently for promising antiferromagnet-based spintronics applications. NiO is a conventional antiferromagnetic semiconductor material and can show ferromagnetism by doping other magnetic elements. In this work, we synthesized epitaxial Fe-doped NiO thin films on SrTiO3 substrates with various crystal orientations by pulsed laser deposition. The room-temperature ferromagnetism of these films is anisotropic, including the saturated magnetization and the coercive field. The anisotropic magnetic behaviors of Fe-doped NiO diluted magnetic oxide system should be closely correlated to the magnetic structure of antiferromagnetic NiO base. Within the easy plane of NiO, the coercive field of the films becomes smaller, and larger coercive field while tested out of the easy plane of NiO. The saturated magnetization anisotropy is due to different strain applied by different substrates. These results lead us to more abundant knowledge of the exchange interactions in this conventional antiferromagnetic system.

  15. Study of performance scaling of 22-nm epitaxial delta-doped channel MOS transistor

    Science.gov (United States)

    Sengupta, Sarmista; Pandit, Soumya

    2015-06-01

    Epitaxial delta-doped channel (EδDC) profile is a promising approach for extending the scalability of bulk metal oxide semiconductor (MOS) technology for low-power system-on-chip applications. A comparative study between EδDC bulk MOS transistor with gate length Lg = 22 nm and a conventional uniformly doped channel (UDC) bulk MOS transistor, with respect to various digital and analogue performances, is presented. The study has been performed using Silvaco technology computer-aided design device simulator, calibrated with experimental results. This study reveals that at smaller gate length, EδDC transistor outperforms the UDC transistor with respect to various studied performances. The reduced contribution of the lateral electric field in the channel plays the key role in this regard. Further, the carrier mobility in EδDC transistor is higher compared to UDC transistor. For moderate gate and drain bias, the impact ionisation rate of the carriers for EδDC MOS transistor is lower than that of the UDC transistor. In addition, at 22 nm, the performances of a EδDC transistor are competitive to that of an ultra-thin body silicon-on-insulator transistor.

  16. Epitaxy of GaN on silicon-impact of symmetry and surface reconstruction

    International Nuclear Information System (INIS)

    Dadgar, A; Schulze, F; Wienecke, M; Gadanecz, A; Blaesing, J; Veit, P; Hempel, T; Diez, A; Christen, J; Krost, A

    2007-01-01

    GaN-on-silicon is a low-cost alternative to growth on sapphire or SiC. Today epitaxial growth is usually performed on Si(111), which has a threefold symmetry. The growth of single crystalline GaN on Si(001), the material of the complementary metal oxide semiconductor (CMOS) industry, is more difficult due to the fourfold symmetry of this Si surface leading to two differently aligned domains. We show that breaking the symmetry to achieve single crystalline growth can be performed, e.g. by off-oriented substrates to achieve single crystalline device quality GaN layers. Furthermore, an exotic Si orientation for GaN growth is Si(110), which we show is even better suited as compared to Si(111) for the growth of high quality GaN-on-silicon with a nearly threefold reduction in the full width at half maximum (FWHM) of the (1 1-bar 0 0)ω-scan. It is found that a twofold surface symmetry is in principal suitable for the growth of single crystalline GaN on Si

  17. Epitaxial growth mechanisms of graphene and effects of substrates

    Science.gov (United States)

    Özçelik, V. Ongun; Cahangirov, S.; Ciraci, S.

    2012-06-01

    The growth process of single layer graphene with and without substrate is investigated using ab initio, finite temperature molecular dynamic calculations within density functional theory. An understanding of the epitaxial graphene growth mechanisms in the atomic level is provided by exploring the transient stages which occur at the growing edges of graphene. These stages are formation and collapse of large carbon rings together with the formation and healing of Stone-Wales like pentagon-heptagon defects. The activation barriers for the healing of these growth induced defects on various substrates are calculated using the climbing image nudge elastic band method and compared with that of the Stone-Wales defect. It is found that the healing of pentagon-heptagon defects occurring near the edge in the course of growth is much easier than that of Stone-Wales defect. The role of the substrate in the epitaxial growth and in the healing of defects are also investigated in detail, along with the effects of using carbon dimers as the building blocks of graphene growth.

  18. Improved radiation tolerance of MAPS using a depleted epitaxial layer

    International Nuclear Information System (INIS)

    Dorokhov, A.; Bertolone, G.; Baudot, J.; Brogna, A.S.; Colledani, C.; Claus, G.; De Masi, R.; Deveaux, M.; Doziere, G.; Dulinski, W.; Fontaine, J.-C.; Goffe, M.; Himmi, A.; Hu-Guo, Ch.; Jaaskelainen, K.; Koziel, M.; Morel, F.; Santos, C.; Specht, M.; Valin, I.

    2010-01-01

    Tracking performance of Monolithic Active Pixel Sensors (MAPS) developed at IPHC (Turchetta, et al., 2001) have been extensively studied (Winter, et al., 2001; Gornushkin, et al., 2002) . Numerous sensor prototypes, called MIMOSA, were fabricated and tested since 1999 in order to optimise the charge collection efficiency and power dissipation, to minimise the noise and to increase the readout speed. The radiation tolerance was also investigated. The highest fluence tolerable for a 10μm pitch device was found to be ∼10 13 n eq /cm 2 , while it was only 2x10 12 n eq /cm 2 for a 20μm pitch device. The purpose of this paper is to show that the tolerance to non-ionising radiation may be extended up to O(10 14 ) n eq /cm 2 . This goal relies on a fabrication process featuring a 15μm thin, high resistivity (∼1kΩcm) epitaxial layer. A sensor prototype (MIMOSA-25) was fabricated in this process to explore its detection performance. The depletion depth of the epitaxial layer at standard CMOS voltages ( 13 n eq /cm 2 ), making evidence of a significant extension of the radiation tolerance limits of MAPS.

  19. The Interfacial Thermal Conductance of Epitaxial Metal-Semiconductor Interfaces

    Science.gov (United States)

    Ye, Ning

    Understanding heat transport at nanometer and sub-nanometer lengthscales is critical to solving a wide range of technological challenges related to thermal management and energy conversion. In particular, finite Interfacial Thermal Conductance (ITC) often dominates transport whenever multiple interfaces are closely spaced together or when heat originates from sources that are highly confined by interfaces. Examples of the former include superlattices, thin films, quantum cascade lasers, and high density nanocomposites. Examples of the latter include FinFET transistors, phase-change memory, and the plasmonic transducer of a heat-assisted magnetic recording head. An understanding of the physics of such interfaces is still lacking, in part because experimental investigations to-date have not bothered to carefully control the structure of interfaces studied, and also because the most advanced theories have not been compared to the most robust experimental data. This thesis aims to resolve this by investigating ITC between a range of clean and structurally well-characterized metal-semiconductor interfaces using the Time-Domain Thermoreflectance (TDTR) experimental technique, and by providing theoretical/computational comparisons to the experimental data where possible. By studying the interfaces between a variety of materials systems, each with unique aspects to their tunability, I have been able to answer a number of outstanding questions regarding the importance of interfacial quality (epitaxial/non-epitaxial interfaces), semiconductor doping, matching of acoustic and optical phonon band structure, and the role of phonon transport mechanisms apart from direct elastic transmission on ITC. In particular, we are able to comment on the suitability of the diffuse mismatch model (DMM) to describe the transport across epitaxial interfaces. To accomplish this goal, I studied interfacial thermal transport across CoSi2, TiSi2, NiSi and PtSi - Si(100) and Si(111), (silicides

  20. Epitaxial hexagonal materials on IBAD-textured substrates

    Science.gov (United States)

    Matias, Vladimir; Yung, Christopher

    2017-08-15

    A multilayer structure including a hexagonal epitaxial layer, such as GaN or other group III-nitride (III-N) semiconductors, a oriented textured layer, and a non-single crystal substrate, and methods for making the same. The textured layer has a crystalline alignment preferably formed by the ion-beam assisted deposition (IBAD) texturing process and can be biaxially aligned. The in-plane crystalline texture of the textured layer is sufficiently low to allow growth of high quality hexagonal material, but can still be significantly greater than the required in-plane crystalline texture of the hexagonal material. The IBAD process enables low-cost, large-area, flexible metal foil substrates to be used as potential alternatives to single-crystal sapphire and silicon for manufacture of electronic devices, enabling scaled-up roll-to-roll, sheet-to-sheet, or similar fabrication processes to be used. The user is able to choose a substrate for its mechanical and thermal properties, such as how well its coefficient of thermal expansion matches that of the hexagonal epitaxial layer, while choosing a textured layer that more closely lattice matches that layer.

  1. Epitaxial GaN around ZnO nanopillars

    Energy Technology Data Exchange (ETDEWEB)

    Fikry, Mohamed; Scholz, Ferdinand [Institut fuer Optoelektronik, Universitaet Ulm, Albert-Einstein-Allee 45, 89081 Ulm (Germany); Madel, Manfred; Tischer, Ingo; Thonke, Klaus [Institut fuer Quantenmaterie, Universitaet Ulm, Albert-Einstein-Allee 45, 89081 Ulm (Germany)

    2011-07-01

    We report on an investigation of the epitaxial quality of GaN layers overgrown coaxially around ZnO nanopillars. In a first step, regularly arranged ZnO nanopillars were grown using pre-patterning by e-beam lithography or self-organized hexagonal polystyrene sphere masks. Alternatively, ZnO pillars were also successfully grown on top of GaN pyramids. In a second step, GaN layers were grown around the ZnO pillars by Metal Organic Vapor Phase Epitaxy. At growth temperatures above 800 C, the ZnO pillars are dissolved by the hydrogen carrier gas leaving hollow GaN nanotubes. Characterization involved photoluminescence (PL), scanning electron microscopy and cathodoluminescence. The fair quality of the deposited GaN layers is confirmed by a sharp low temperature PL peak at 3.48 eV attributed to the donor bound exciton emission. Further peaks at 3.42 eV and 3.29 eV show the possible existence of basal plane and prismatic stacking faults.

  2. Disorder in silicon films grown epitaxially at low temperature

    International Nuclear Information System (INIS)

    Schwarzkopf, J.; Selle, B.; Bohne, W.; Roehrich, J.; Sieber, I.; Fuhs, W.

    2003-01-01

    Homoepitaxial Si films were prepared by electron cyclotron resonance plasma enhanced chemical vapor deposition on Si(100) substrates at temperatures of 325-500 deg. C using H 2 , Ar, and SiH 4 as process gases. The gas composition, substrate temperature, and substrate bias voltage were systematically varied to study the breakdown of epitaxial growth. Information from ion beam techniques, like Rutherford backscattering and heavy-ion elastic recoil detection analysis, was combined with transmission and scanning electron micrographs to examine the transition from ordered to amorphous growth. The results suggest that the breakdown proceeds in two stages: (i) highly defective but still ordered growth with a defect density increasing with increasing film thickness and (ii) formation of conically shaped amorphous precipitates. The hydrogen content is found to be directly related to the degree of disorder which acts as sink for excessive hydrogen. Only in almost perfect epitaxially grown films is the hydrogen level low, and an exponential tail of the H concentration into the crystalline substrate is observed as a result of the diffusive transport of hydrogen

  3. Epitaxial Ge-crystal arrays for X-ray detection

    International Nuclear Information System (INIS)

    Kreiliger, T; Falub, C V; Müller, E; Känel, H von; Isa, F; Isella, G; Chrastina, D; Bergamaschini, R; Marzegalli, A; Miglio, L; Kaufmann, R; Niedermann, P; Neels, A; Dommann, A; Meduňa, M

    2014-01-01

    Monolithic integration of an X-ray absorber layer on a Si CMOS chip might be a potentially attractive way to improve detector performance at acceptable costs. In practice this requires, however, the epitaxial growth of highly mismatched layers on a Si-substrate, both in terms of lattice parameters and thermal expansion coefficients. The generation of extended crystal defects, wafer bowing and layer cracking have so far made it impossible to put the simple concept into practice. Here we present a way in which the difficulties of fabricating very thick, defect-free epitaxial layers may be overcome. It consists of an array of densely packed, three-dimensional Ge-crystals on a patterned Si(001) substrate. The finite gap between neighboring micron-sized crystals prevents layer cracking and substrate bowing, while extended defects are driven to the crystal sidewalls. We show that the Ge-crystals are indeed defect-free, despite the lattice misfit of 4.2%. The electrical characteristics of individual Ge/Si heterojunction diodes are obtained from in-situ measurements inside a scanning electron microscope. The fabrication of monolithically integrated detectors is shown to be compatible with Si-CMOS processing

  4. New synthesis method for the growth of epitaxial graphene

    Energy Technology Data Exchange (ETDEWEB)

    Yu, X.Z. [Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA 94720 (United States); Laboratory of Condensed Matter Spectroscopy and Opto-Electronic Physics, Department of Physics, Shanghai Jiao Tong University, 1954 Hua Shan Road, Shanghai 200030 (China); Hwang, C.G.; Jozwiak, C.M.; Koehl, A. [Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA 94720 (United States); Schmid, A.K. [National Center for Electron Microscopy, Lawrence Berkeley National Laboratory, Berkeley, CA 94709 (United States); Lanzara, A., E-mail: ALanzara@lbl.gov [Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA 94720 (United States); Department of Physics, University of California, Berkeley, CA 94720 (United States)

    2011-04-15

    Highlights: {yields} We report a new straightforward method for the synthesis of micrometer scale graphene sheets. {yields} The process is based on a face to face mehtod in which two SiC substrates are placed one on top of the other and are heated simultaneously, leading to highly homogeneous samples. {yields} The number of graphene layers is determined by the annealing temperature. - Abstract: As a viable candidate for an all-carbon post-CMOS electronics revolution, epitaxial graphene has attracted significant attention. To realize its application potential, reliable methods for fabricating large-area single-crystalline graphene domains are required. A new way to synthesize high quality epitaxial graphene, namely 'face-to-face' method, has been reported in this paper. The structure and morphologies of the samples are characterized by low-energy electron diffraction, atomic force microscopy, angle-resolved photoemission spectroscopy and Raman spectroscopy. The grown samples show better quality and larger length scales than samples grown through conventional thermal desorption. Moreover, the graphene thickness can be easily controlled by changing annealing temperature.

  5. Epitaxial hexagonal materials on IBAD-textured substrates

    Energy Technology Data Exchange (ETDEWEB)

    Matias, Vladimir; Yung, Christopher

    2017-08-15

    A multilayer structure including a hexagonal epitaxial layer, such as GaN or other group III-nitride (III-N) semiconductors, a <111> oriented textured layer, and a non-single crystal substrate, and methods for making the same. The textured layer has a crystalline alignment preferably formed by the ion-beam assisted deposition (IBAD) texturing process and can be biaxially aligned. The in-plane crystalline texture of the textured layer is sufficiently low to allow growth of high quality hexagonal material, but can still be significantly greater than the required in-plane crystalline texture of the hexagonal material. The IBAD process enables low-cost, large-area, flexible metal foil substrates to be used as potential alternatives to single-crystal sapphire and silicon for manufacture of electronic devices, enabling scaled-up roll-to-roll, sheet-to-sheet, or similar fabrication processes to be used. The user is able to choose a substrate for its mechanical and thermal properties, such as how well its coefficient of thermal expansion matches that of the hexagonal epitaxial layer, while choosing a textured layer that more closely lattice matches that layer.

  6. Extraordinary epitaxial alignment of graphene islands on Au(111)

    International Nuclear Information System (INIS)

    Wofford, Joseph M; Dubon, Oscar D; Starodub, Elena; Nie Shu; Bartelt, Norman C; Thürmer, Konrad; McCarty, Kevin F; Walter, Andrew L; Bostwick, Aaron; Rotenberg, Eli

    2012-01-01

    Pristine, single-crystalline graphene displays a unique collection of remarkable electronic properties that arise from its two-dimensional, honeycomb structure. Using in situ low-energy electron microscopy, we show that when deposited on the (111) surface of Au carbon forms such a structure. The resulting monolayer, epitaxial film is formed by the coalescence of dendritic graphene islands that nucleate at a high density. Over 95% of these islands can be identically aligned with respect to each other and to the Au substrate. Remarkably, the dominant island orientation is not the better lattice-matched 30° rotated orientation but instead one in which the graphene [01] and Au [011] in-plane directions are parallel. The epitaxial graphene film is only weakly coupled to the Au surface, which maintains its reconstruction under the slightly p-type doped graphene. The linear electronic dispersion characteristic of free-standing graphene is retained regardless of orientation. That a weakly interacting, non-lattice matched substrate is able to lock graphene into a particular orientation is surprising. This ability, however, makes Au(111) a promising substrate for the growth of single crystalline graphene films. (paper)

  7. Solid phase epitaxy of amorphous silicon carbide: Ion fluence dependence

    International Nuclear Information System (INIS)

    Bae, I.-T.; Ishimaru, Manabu; Hirotsu, Yoshihiko; Sickafus, Kurt E.

    2004-01-01

    We have investigated the effect of radiation damage and impurity concentration on solid phase epitaxial growth of amorphous silicon carbide (SiC) as well as microstructures of recrystallized layer using transmission electron microscopy. Single crystals of 6H-SiC with (0001) orientation were irradiated with 150 keV Xe ions to fluences of 10 15 and 10 16 /cm 2 , followed by annealing at 890 deg. C. Full epitaxial recrystallization took place in a specimen implanted with 10 15 Xe ions, while retardation of recrystallization was observed in a specimen implanted with 10 16 /cm 2 Xe ions. Atomic pair-distribution function analyses and energy dispersive x-ray spectroscopy results suggested that the retardation of recrystallization of the 10 16 Xe/cm 2 implanted sample is attributed to the difference in amorphous structures between the 10 15 and 10 16 Xe/cm 2 implanted samples, i.e., more chemically disordered atomistic structure and higher Xe impurity concentration in the 10 16 Xe/cm 2 implanted sample

  8. Computational Approach for Epitaxial Polymorph Stabilization through Substrate Selection

    Energy Technology Data Exchange (ETDEWEB)

    Ding, Hong; Dwaraknath, Shyam S.; Garten, Lauren; Ndione, Paul; Ginley, David; Persson, Kristin A.

    2016-05-25

    With the ultimate goal of finding new polymorphs through targeted synthesis conditions and techniques, we outline a computational framework to select optimal substrates for epitaxial growth using first principle calculations of formation energies, elastic strain energy, and topological information. To demonstrate the approach, we study the stabilization of metastable VO2 compounds which provides a rich chemical and structural polymorph space. We find that common polymorph statistics, lattice matching, and energy above hull considerations recommends homostructural growth on TiO2 substrates, where the VO2 brookite phase would be preferentially grown on the a-c TiO2 brookite plane while the columbite and anatase structures favor the a-b plane on the respective TiO2 phases. Overall, we find that a model which incorporates a geometric unit cell area matching between the substrate and the target film as well as the resulting strain energy density of the film provide qualitative agreement with experimental observations for the heterostructural growth of known VO2 polymorphs: rutile, A and B phases. The minimal interfacial geometry matching and estimated strain energy criteria provide several suggestions for substrates and substrate-film orientations for the heterostructural growth of the hitherto hypothetical anatase, brookite, and columbite polymorphs. These criteria serve as a preliminary guidance for the experimental efforts stabilizing new materials and/or polymorphs through epitaxy. The current screening algorithm is being integrated within the Materials Project online framework and data and hence publicly available.

  9. Anatase thin film with diverse epitaxial relationship grown on yttrium stabilized zirconia substrate by chemical vapor deposition

    International Nuclear Information System (INIS)

    Miyagi, Takahira; Ogawa, Tomoyuki; Kamei, Masayuki; Wada, Yoshiki; Mitsuhashi, Takefumi; Yamazaki, Atsushi

    2003-01-01

    An anatase epitaxial thin film with diverse epitaxial relationship, YSZ (001) // anatase (001), YSZ (010) // anatase (110), was grown on a single crystalline yttrium stabilized zirconia (YSZ) (001) substrate by metal organic chemical vapor deposition (MOCVD). The full width at half maximum (FWHM) of the (004) reflection of this anatase epitaxial film was 0.4deg, and the photoluminescence of this anatase epitaxial film showed visible emission with broad spectral width and large Stokes shift at room temperature. These results indicate that this anatase epitaxial film possessed almost equal crystalline quality compared with that grown under identical growth conditions on single crystalline SrTiO 3 substrate. (author)

  10. Single-Crystal Y2O3 Epitaxially on GaAs(001 and (111 Using Atomic Layer Deposition

    Directory of Open Access Journals (Sweden)

    Y. H. Lin

    2015-10-01

    Full Text Available Single-crystal atomic-layer-deposited (ALD Y\\(_{\\mathrm{2}}\\O\\(_{\\mathrm{3}}\\ films 2 nm thick were epitaxially grown on molecular beam epitaxy (MBE GaAs(001-4 \\(\\times\\ 6 and GaAs(111A-2 \\(\\times\\ 2 reconstructed surfaces. The in-plane epitaxy between the ALD-oxide films and GaAs was observed using \\textit{in-situ} reflection high-energy electron diffraction in our uniquely designed MBE/ALD multi-chamber system. More detailed studies on the crystallography of the hetero-structures were carried out using high-resolution synchrotron radiation X-ray diffraction. When deposited on GaAs(001, the Y\\(_{\\mathrm{2}}\\O\\(_{\\mathrm{3}}\\ films are of a cubic phase and have (110 as the film normal, with the orientation relationship being determined: Y\\(_{\\mathrm{2}}\\O\\(_{\\mathrm{3}}\\(\\(110\\[\\(001\\][\\(\\overline{1}10\\]//GaAs(\\(001\\[\\(110\\][\\(1\\overline{1}0\\]. On GaAs(\\(111\\A, the Y\\(_{\\mathrm{2}}\\O\\(_{\\mathrm{3}}\\ films are also of a cubic phase with (\\(111\\ as the film normal, having the orientation relationship of Y\\(_{\\mathrm{2}}\\O\\(_{\\mathrm{3}}\\(\\(111\\[\\(2\\overline{1}\\overline{1}\\] [\\(01\\overline{1}\\]//GaAs (\\(111\\ [\\(\\overline{2}11\\][\\(0\\overline{1}1\\]. The relevant orientation for the present/future integrated circuit platform is (\\(001\\. The ALD-Y\\(_{\\mathrm{2}}\\O\\(_{\\mathrm{3}}\\/GaAs(\\(001\\-4 \\(\\times\\ 6 has shown excellent electrical properties. These include small frequency dispersion in the capacitance-voltage CV curves at accumulation of ~7% and ~14% for the respective p- and n-type samples with the measured frequencies of 1 MHz to 100 Hz. The interfacial trap density (Dit is low of ~10\\(^{12}\\ cm\\(^{−2}\\eV\\(^{−1}\\ as extracted from measured quasi-static CVs. The frequency dispersion at accumulation and the D\\(_{it}\\ are the lowest ever achieved among all the ALD-oxides on GaAs(\\(001\\.

  11. Method of depositing an electrically conductive oxide film on a textured metallic substrate and articles formed therefrom

    Science.gov (United States)

    Christen, David K.; He, Qing

    2001-01-01

    The present invention provides a biaxially textured laminate article having a polycrystalline biaxially textured metallic substrate with an electrically conductive oxide layer epitaxially deposited thereon and methods for producing same. In one embodiment a biaxially texture Ni substrate has a layer of LaNiO.sub.3 deposited thereon. An initial layer of electrically conductive oxide buffer is epitaxially deposited using a sputtering technique using a sputtering gas which is an inert or forming gas. A subsequent layer of an electrically conductive oxide layer is then epitaxially deposited onto the initial layer using a sputtering gas comprising oxygen. The present invention will enable the formation of biaxially textured devices which include HTS wires and interconnects, large area or long length ferromagnetic and/or ferroelectric memory devices, large area or long length, flexible light emitting semiconductors, ferroelectric tapes, and electrodes.

  12. Atomic oxygen effect on the in situ growth of stoichiometric YBa2Cu3O7 - delta epitaxial films by facing targets 90° off-axis radiofrequency magnetron sputtering

    Science.gov (United States)

    Oya, Gin-ichiro; Diao, Chien Chen; Imai, Syozo; Uzawa, Takaaki; Sawada, Yasuji; Sugai, Tokuko; Nakajima, Kensuke; Yamashita, Tsutomu

    1995-06-01

    (110)- and (103)-oriented almost stoichiometric YBa2Cu3O7-δ (YBCO) films have been grown epitaxially on hot SrTiO3 (110) substrates using a 90° off-axis rf magnetron sputtering technique, for fabrication of vertical sandwich-type YBCO/insulator/YBCO or YBCO/normal metal/YBCO Josephson junctions utilizing the high-quality YBCO films. The YBCO epitaxial films with high transition temperatures Tc of ˜90 K have been deposited in situ only under the conditions of substrate temperatures Ts of ˜650-˜700 °C and oxygen partial pressure PO2 of ˜5×10-3-˜10×10-3 Torr, which are in close proximity to the critical stability/decomposition line for YBa2Cu3O6 in the ordinary Y-Ba-Cu-O phase diagram. Using a quadrupole mass spectrometer, a high density of atomic oxygen has directly been observed to be efficiently produced in the sputter glow discharge under the above optimum conditions of PO2. This atomic oxygen has played a key role in promoting the formation of the perovskite structure and the epitaxial growth of the YBCO films. Furthermore, Shapiro steps have successfully been observed for a Nb-YBCO point-contact junction, which is made by pressing a Nb needle on a surface-etched YBCO epitaxial film, under 525.4 GHz submillimeter-wave irradiation.

  13. Bromine doping of CdTe and CdMnTe epitaxial layers grown by molecular beam epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Waag, A. (Physikalisches Inst. der Univ. Wuerzburg (Germany)); Scholl, S. (Physikalisches Inst. der Univ. Wuerzburg (Germany)); Schierstedt, K. von (Physikalisches Inst. der Univ. Wuerzburg (Germany)); Hommel, D. (Physikalisches Inst. der Univ. Wuerzburg (Germany)); Landwehr, G. (Physikalisches Inst. der Univ. Wuerzburg (Germany)); Bilger, G. (Zentrum fuer Sonnenenergie und Wasserstoff-Forschung, Stuttgart (Germany))

    1993-03-01

    We report on the n-type doping of CdTe and CdMnTe with bormine as a novel dopant material. /the thin films were grown by molecular beam epitaxy. ZnBr[sub 2] was used as a source material for the n-type doping. Free carrier concentrations at room temperature of up to 2.8x10[sup 18] cm[sup -3] could be readily obtained for both CdTe as well as CdMnTe thin films with Mn concentrations below 10%. This is to our knowledge the highest value ever obtained for the dilute magnetic semiconductor CdMnTe. For ZnBr[sub 2] source temperatures up to 60 C - corresponding to a free carrier concentration of (2-3)x10[sup 18] cm[sup -3] - the free carrier concentration of the epitaxial film increases with ZnBr[sub 2] source temperature. For higher ZnBr[sub 2] source temperatures compensation becomes dominant, which is indicated by a steep decrease of the free carrier concentration with increasing ZnBr[sub 2] source temperature. In addition the carrier mobility decreases drastically for such high dopant fluxes. A model of bromine incorporation is proposed. (orig.)

  14. Epitaxial growth and characterization of CuGa2O4 films by laser molecular beam epitaxy

    Directory of Open Access Journals (Sweden)

    Hongling Wei

    2017-11-01

    Full Text Available Ga2O3 with a wide bandgap of ∼ 4.9 eV can crystalize in five crystalline phases. Among those phases, the most stable monoclinic β-Ga2O3 has been studied most, however, it is hard to find materials lattice matching with β-Ga2O3 to grown epitaxial thin films for optoelectronic applications. In this work, CuGa2O4 bulk were prepared by solid state reaction as target, and the films were deposited on sapphire substrates by laser molecular beam epitaxy (L-MBE at different substrate temperatures. The influences of substrate temperature on structural and optical properties have been systematically investigated by means of X-ray diffraction, Transmission electron microscope and UV-vis absorption spectra. High quality cubic structure and [111] oriented CuGa2O4 film can be obtained at substrate temperature of 750 °C. It’s also demonstrated that the CuGa2O4 film has a bandgap of ∼ 4.4 eV and a best crystal quality at 750 °C, suggesting that CuGa2O4 film is a promising candidate for applications in ultraviolet optoelectronic devices.

  15. Radiation hardness of silicon detectors manufactured on epitaxial material and FZ bulk enriched with oxygen, carbon, tin and platinum

    CERN Document Server

    Ruzin, A; Glaser, M; Lemeilleur, F; Talamonti, R; Watts, S; Zanet, A

    1999-01-01

    Recent results on the radiation hardness of silicon detectors fabricated on epitaxial and float zone bulk silicon enriched by various impurities, such as carbon, oxygen, tin and platinum are reported. A new methodology of measurements of electrical properties of the devices has been utilized in the experiment. It has been shown that in the case of irradiation by protons, oxygen enriched silicon has better radiation hardness than standard float zone silicon. The carbon enriched silicon detectors, on the other hand, exhibited significantly inferior radiation hardness compared to standard detectors. This study shows for the first time, a violation of the widely used normalization technique of the various particle irradiations by NIEL coefficients. The study has been carried out in the framework of the RD48 (ROSE) collaboration, which studies the radiation hardening of silicon detectors. (5 refs).

  16. Magnetic properties of epitaxial MnAs thin films on GaAs (001)

    CERN Document Server

    Park, Y S

    2000-01-01

    The magnetic properties of two types of epitaxial MnAs films on GaAs (001) substrates in the thickness range of 20 approx 200 nm were studied. Using longitudinal a magneto-optical Kerr-effect(MOKE) apparatus at lambda=632.8 nm, we determined the Curie temperatures of the 100-nm thick films to be 54.0+-0.5 .deg. C and 63.7+-0.5 .deg. C for type A films and type B films, respectively. The observed Curie temperatures corresponded to increases of 36.8 .deg. C and 33.9 .deg. C per one percent increase in the unit cell volume for type A and B, respectively. The normalized maximum MOKE signal from the type A film exhibited a first-order-like magnetic transition while that of type B underwent a second-order-like transition. These different behaviors between types A and B stem from different residual stresses being exerted on the hexagonal phase. Utilizing a Foner-type vibrating sample magnetometer at room temperature, we examined the thickness dependence of the coercive force and the saturation magnetization of the f...

  17. Growth of layered superconductor β-PdBi{sub 2} films using molecular beam epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Denisov, N.V., E-mail: denisov@iacp.dvo.ru [Institute of Automation and Control Processes FEB RAS, 5 Radio Street, 690041 Vladivostok (Russian Federation); Matetskiy, A.V.; Tupkalo, A.V. [Institute of Automation and Control Processes FEB RAS, 5 Radio Street, 690041 Vladivostok (Russian Federation); Zotov, A.V. [Institute of Automation and Control Processes FEB RAS, 5 Radio Street, 690041 Vladivostok (Russian Federation); School of Natural Sciences, Far Eastern Federal University, 690950 Vladivostok (Russian Federation); Department of Electronics, Vladivostok State University of Economics and Service, 690600 Vladivostok (Russian Federation); Saranin, A.A. [Institute of Automation and Control Processes FEB RAS, 5 Radio Street, 690041 Vladivostok (Russian Federation); School of Natural Sciences, Far Eastern Federal University, 690950 Vladivostok (Russian Federation)

    2017-04-15

    Highlights: • Bulk β-PdBi{sub 2} is layered material with advanced properties of topological superconductor. • We present a method for growing β-PdBi{sub 2} films of a desired thickness. • Method utilizes MBE growth of β-PdBi{sub 2}, using Bi(111) film on Si(111) as a template. • Electronic and superconducting properties of the films are similar to those of bulk β-PdBi{sub 2}. - Abstract: Bulk β-PdBi{sub 2} layered material exhibits advanced properties and is supposed to be probable topological superconductor. We present a method based on molecular beam epitaxy that allows us to grow β-PdBi{sub 2} films from a single β-PdBi{sub 2} triple layer up to the dozens of triple layers, using Bi(111) film on Si(111) as a template. The grown films demonstrate structural, electronic and superconducting properties similar to those of bulk β-PdBi{sub 2} crystals. Ability to grow the β-PdBi{sub 2} films of desired thickness opens the promising possibilities to explore fascinating properties of this advanced material.

  18. The Low Temperature Epitaxy of Strained GeSn Layers Using RTCVD System

    Science.gov (United States)

    Kil, Yeon-Ho; Yuk, Sim-Hoon; Jang, Han-Soo; Lee, Sang-Geul; Choi, Chel-Jong; Shim, Kyu-Hwan

    2018-03-01

    We have investigated the low temperature (LT) growth of GeSn-Ge-Si structures using rapid thermal chemical vapor deposition system utilizing Ge2H6 and SnCl4 as the reactive precursors. Due to inappropriate phenomena, such as, Ge etch and Sn segregation, it was hard to achieve high quality GeSn epitaxy at the temperature > 350 °C. On the contrary, we found that the SnCl4 promoted the reaction of Ge2H6 precursors in a certain process condition of LT, 240-360 °C. In return, we could perform the growth of GeSn epi layer with 7.7% of Sn and its remaining compressive strain of 71.7%. The surface propagated defects were increased with increasing the Sn content in the GeSn layer confirmed by TEM analysis. And we could calculate the activation energies at lower GeSn growth temperature regime using by Ge2H6 and SnCl4 precursors about 0.43 eV.

  19. Ellipsometric study of GaN/AIN/Si(111) heterostructures grown by molecular beam epitaxy

    International Nuclear Information System (INIS)

    Nabi, M. A. U.; Ashfaq, A.; Arshad, M. I.; Ali, A.; Mahmood, K.; Hasan, M. A.; Asghar, M.

    2013-01-01

    GaN and related structures attracted a great interest in the recent years for electronic and optoelectronic applications due to their promising properties. GaN is grown popularly on foreign substrates like sapphire and SiC. However, silicon due to its favourable properties attended the great attention of material scientists and researchers to utilize as substrate for heteroepitaxy of GaN based structures and devices. Silicon substrates are low cost, available in large diameters and have well characterized thermal and electrical properties. In this study, GaN/AlN/Si(111) heterostructures were grown by molecular beam epitaxy. We performed x-ray diffraction spectroscopy and spectroscopic ellipsometry on these samples to study their structural and optical properties. XRD measurements performed on these samples revealed the presence of high quality GaN films as well as the presence of AlN buffer layer with the following miller indices: GaN (002), GaN (004), GaN (006) and GaN (110) along with Si peak of phase (111). The ellipsometric data obtained were used to characterize the GaN/Si samples as a function of film thickness. Refractive index, extinction coefficient and dielectric constant were calculated by the measured data. (author)

  20. PREFACE: Semiconducting oxides Semiconducting oxides

    Science.gov (United States)

    Catlow, Richard; Walsh, Aron

    2011-08-01

    epitaxial In2O3 thin films grown on Y-stabilised ZrO2(111) K H L Zhang, V K Lazarov, T D Veal, F E Oropeza, C F McConville, R G Egdell and A Walsh Hydrogenated cation vacancies in semiconducting oxidesJ B Varley, H Peelaers, A Janotti and C G Van de Walle Reactive force field simulation of proton diffusion in BaZrO3 using an empirical valence bond approachPaolo Raiteri, Julian D Gale and Giovanni Bussi Conductivity in transparent oxide semiconductorsP D C King and T D Veal A theoretical study of a ZnO graphene analogue: adsorption on Ag(111) and hydrogen transportIlker Demiroglu, Daniele Stradi, Francesc Illas and Stefan T Bromley The interplay between dopants and oxygen vacancies in the magnetism of V-doped TiO2 Ricardo Grau-Crespo and Udo Schwingenschlögl Electron and hole stability in GaN and ZnOAron Walsh, C Richard A Catlow, Martina Miskufova and Alexey A Sokol Holes bound as small polarons to acceptor defects in oxide materials: why are their thermal ionization energies so high?O F Schirmer

  1. Top-gate dielectric induced doping and scattering of charge carriers in epitaxial graphene

    Science.gov (United States)

    Puls, Conor P.; Staley, Neal E.; Moon, Jeong-Sun; Robinson, Joshua A.; Campbell, Paul M.; Tedesco, Joseph L.; Myers-Ward, Rachael L.; Eddy, Charles R.; Gaskill, D. Kurt; Liu, Ying

    2011-07-01

    We show that an e-gun deposited dielectric impose severe limits on epitaxial graphene-based device performance based on Raman spectroscopy and low-temperature transport measurements. Specifically, we show from studies of epitaxial graphene Hall bars covered by SiO2 that the measured carrier density is strongly inhomogenous and predominantly induced by charged impurities at the grapheme/dielectric interface that limit mobility via Coulomb interactions. Our work emphasizes that material integration of epitaxial graphene and a gate dielectric is the next major road block towards the realization of graphene-based electronics.

  2. Use of epitaxial silicon diodes in photon dosimetry

    International Nuclear Information System (INIS)

    Pereira, Lilian Nunes

    2013-01-01

    In this work we report on results obtained with two rad-hard epitaxial (EPI) silicon diodes as on-line dosimeter for diagnostic radiology, mammography and computed tomography, in the 28 kV to 150 kV range. The epitaxial diodes used were processed at University of Hamburg on 50 μm thick epitaxial silicon layer. One sample was not irradiated before using as a dosimeter, while the other received a gamma pre-dose of 200kGy from 60 Co. For comparison, a standard float zone silicon diode was also studied. The samples irradiation was performed using X-ray beams from a Pantak/Seifert generator, model Isovolt 160 HS, previously calibrated with standardized ionization chambers, located at Laboratorio de Calibracao de Instrumentos of IPEN-CNEN/SP. The diode was connected to an electrometer Keithley 6517B in the photovoltaic mode. Irradiations were carried out with the diodes positioned at lm from the X-ray tube (focal spot). The main dosimetric parameters of the EPI samples were evaluated in according to IEC 61674 norm. The calibration coefficients of the diode, in terms of air kerma, were also determined. The repeatability was measured with photon beams of all qualities. The current signals induced showed the diodes are stable, characterized by coefficients of variation less than 0.3%. The current response of the unirradiated EPI diode has been shown to be very linear with dose-rate in the range of 0.8 up to 77.2 mGy/min. A linear relation between charge and dose in the whole energy range was observed for the three samples. It is important to notice that for EPI diodes non energy dependence was observed for mammography beams and until 70kV for radiodiagnostic qualities. The unirradiated diode presented sensitivity higher than the others, showing a decrease of 8% in this parameter after accumulated dose of 49.15 Gy. The dark currents were stable about 0.4 pA during the irradiations, value 10 4 higher than the lowest photocurrents measured. The directional response of both

  3. Band gap and mobility of epitaxial perovskite BaSn1 -xHfxO3 thin films

    Science.gov (United States)

    Shin, Juyeon; Lim, Jinyoung; Ha, Taewoo; Kim, Young Mo; Park, Chulkwon; Yu, Jaejun; Kim, Jae Hoon; Char, Kookrin

    2018-02-01

    A wide band-gap perovskite oxide BaSn O3 is attracting much attention due to its high electron mobility and oxygen stability. On the other hand, BaHf O3 was recently reported to be an effective high-k gate oxide. Here, we investigate the band gap and mobility of solid solutions of BaS n1 -xH fxO3 (x =0 -1 ) (BSHO) as a basis to build advanced perovskite oxide heterostructures. All the films were epitaxially grown on MgO substrates using pulsed laser deposition. Density functional theory calculations confirmed that Hf substitution does not create midgap states while increasing the band gap. From x-ray diffraction and optical transmittance measurements, the lattice constants and the band-gap values are significantly modified by Hf substitution. We also measured the transport properties of n -type La-doped BSHO films [(Ba ,La ) (Sn ,Hf ) O3 ] , investigating the feasibility of modulation doping in the BaSn O3/BSHO heterostructures. The Hall measurement data revealed that, as the Hf content increases, the activation rate of the La dopant decreases and the scattering rate of the electrons sharply increases. These properties of BSHO films may be useful for applications in various heterostructures based on the BaSn O3 system.

  4. Utilities objectives

    International Nuclear Information System (INIS)

    Cousin, Y.; Fabian, H.U.

    1996-01-01

    The policy of French and german utilities is to make use of nuclear energy as a long term, competitive and environmentally friendly power supply. The world electricity generation is due to double within the next 30 years. In the next 20 to 30 years the necessity of nuclear energy will be broadly recognized. More than for most industries, to deal properly with nuclear energy requires the combination of a consistent political will, of a proper institutional framework, of strong and legitimate control authorities, of a sophisticated industry and of operators with skilled management and human resources. One of the major risk facing nuclear energy is the loss of competitiveness. This can be achieved only through the combination of an optimized design, a consistent standardization, a proper industrial partnership and a stable long term strategy. Although the existing plants in Western Europe are already very safe, the policy is clearly to enhance the safety of the next generation of nuclear plants which are designing today. The French and German utilities have chosen an evolutionary approach based on experience and proven technologies, with an enhanced defense in depth and an objective of easier operation and maintenance. The cost objective is to maintain and improve what has been achieved in the best existing power plants in both countries. This calls for rational choices and optimized design to meet the safety objectives, a strong standardization policy, short construction times, high availability and enough flexibility to enable optimization of the fuel cycle throughout the lifetime of the plants. The conceptual design phase has proven that the French and German teams from industry and from the utilities are able to pursue both the safety and the cost objectives, basing their decision on a rational approach which could be accepted by the safety authorities. (J.S.)

  5. Thorium utilization

    Energy Technology Data Exchange (ETDEWEB)

    Trauger, D B [Oak Ridge National Lab., TN (USA)

    1978-01-01

    Some of the factors that provide incentive for the utilization of thorium in specific reactor types are explored and the constraints that stand in the way are pointed out. The properties of thorium and derived fuels are discussed, and test and reactor operating experience is reviewed. In addition, symbiotic systems of breeder and converter reactor are suggested as being particularly attractive systems for energy production. Throughout the discussion, the High-Temperature Gas-Cooled Reactor and Molten Salt Reactor are treated in some detail because they have been developed primarily for use with thorium fuel cycles.

  6. Japanese utilities' plutonium utilization program

    International Nuclear Information System (INIS)

    Matsuo, Yuichiro.

    1996-01-01

    Japan's 10 utility companies are working and will continue to work towards establishing a fully closed nuclear fuel cycle. The key goals of which are: (1) reprocessing spent fuel; (2) recycling recovered uranium and plutonium; and (3) commercializing fast breeder technology by around the year 2030. This course of action by the Japanese electric power industry is in full accordance with Japan's national policy outlined in the government's report ''The Long-Term Program for Research, Development, and Nuclear Energy,'' which was published in June 1994. The Japanese civilian nuclear program is a long-term program that looks into the 21st century and beyond. It is quite true that sustaining the recycling option for energy security and the global environment demands a large investment. For it to be accepted by the public, safety must be the highest priority and will be pursued at a great cost if necessary. In its history, Japan has learned that as technology advances, costs will come down. The Japanese utility industry will continue investment in technology without compromising safety until the recycling option becomes more competitive with other options. This effort will be equally applied to the development of the commercial FBRs. The Japanese utility industry is confident that Japan's stable policy and strong objective to develop competitive and peaceful technology will contribute to the global economy and the environment without increasing the threat of plutonium proliferation

  7. Multiattribute Utility Theory without Expected Utility Foundations

    NARCIS (Netherlands)

    J. Miyamoto (John); P.P. Wakker (Peter)

    1996-01-01

    textabstractMethods for determining the form of utilities are needed for the implementation of utility theory in specific decisions. An important step forward was achieved when utility theorists characterized useful parametric families of utilities and simplifying decompositions of multiattribute

  8. A high resolution cross section transmission electron microscopy study of epitaxial rare earth fluoride/GaAs(111) interfaces prepared by molecular beam epitaxy

    International Nuclear Information System (INIS)

    Chien, C.J.; Bravman, J.C.

    1990-01-01

    The authors report the HRXTEM study of epitaxial rare earth fluoride/GaAs(111) interfaces. Such interfaces are of interest because they are the starting point for growth of buried epitaxial rare earth/rare earth fluoride sandwich structures which exhibit interesting and non bulk-like magnetic properties. Also, the optical transitions in ultrathin epitaxial NdF 3 films may be influenced by strain and defects in the NdF 3 film and the nature of the interface to GaAs. The authors find that the rare earth fluoride/GaAs interfaces are semi-coherent but chemically abrupt with the transition taking place within 3 Angstrom. However, the interface is physically rough and multiple monolayer steps in the GaAs surface tend to tilt boundaries in the fluoride. The origin of these steps is believed to be thermal etching of the GaAs during the heat- cleaning stage prior to epitaxy. The surface of the fluoride film is much smoother than the initial GaAs surface indicating planarization during epitaxy

  9. Electronic cooling via interlayer Coulomb coupling in multilayer epitaxial graphene

    Science.gov (United States)

    Mihnev, Momchil T.; Tolsma, John R.; Divin, Charles J.; Sun, Dong; Asgari, Reza; Polini, Marco; Berger, Claire; de Heer, Walt A.; MacDonald, Allan H.; Norris, Theodore B.

    2015-01-01

    In van der Waals bonded or rotationally disordered multilayer stacks of two-dimensional (2D) materials, the electronic states remain tightly confined within individual 2D layers. As a result, electron–phonon interactions occur primarily within layers and interlayer electrical conductivities are low. In addition, strong covalent in-plane intralayer bonding combined with weak van der Waals interlayer bonding results in weak phonon-mediated thermal coupling between the layers. We demonstrate here, however, that Coulomb interactions between electrons in different layers of multilayer epitaxial graphene provide an important mechanism for interlayer thermal transport, even though all electronic states are strongly confined within individual 2D layers. This effect is manifested in the relaxation dynamics of hot carriers in ultrafast time-resolved terahertz spectroscopy. We develop a theory of interlayer Coulomb coupling containing no free parameters that accounts for the experimentally observed trends in hot-carrier dynamics as temperature and the number of layers is varied. PMID:26399955

  10. Molecular beam epitaxy of LiMnAs

    Czech Academy of Sciences Publication Activity Database

    Novák, Vít; Cukr, Miroslav; Šobáň, Zbyněk; Jungwirth, Tomáš; Martí, X.; Holý, V.; Horodyská, P.; Němec, P.

    2011-01-01

    Roč. 323, č. 1 (2011), s. 348-350 ISSN 0022-0248 R&D Projects: GA MŠk LC510; GA AV ČR KAN400100652; GA MŠk(CZ) 7E08087 EU Projects: European Commission(XE) 215368 - SemiSpinNet; European Commission(XE) 214499 - NAMASTE Grant - others:AV ČR(CZ) AP0801 Program:Akademická prémie - Praemium Academiae Institutional research plan: CEZ:AV0Z10100520; CEZ:AV0Z10100521 Keywords : crystal structure * molecular beam epitaxy * lithium compounds * magnetic semiconductors Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 1.726, year: 2011

  11. Epitaxial growth of Cu on Cu(001): Experiments and simulations

    International Nuclear Information System (INIS)

    Furman, Itay; Biham, Ofer; Zuo, Jiang-Kai; Swan, Anna K.; Wendelken, John

    2000-01-01

    A quantitative comparison between experimental and Monte Carlo simulation results for the epitaxial growth of Cu/Cu(001) in the submonolayer regime is presented. The simulations take into account a complete set of hopping processes whose activation energies are derived from semiempirical calculations using the embedded-atom method. The island separation is measured as a function of the incoming flux and the temperature. A good quantitative agreement between the experiment and simulation is found for the island separation, the activation energies for the dominant processes, and the exponents that characterize the growth. The simulation results are then analyzed at lower coverages, which are not accessible experimentally, providing good agreement with theoretical predictions as well

  12. Self-consistent expansion for the molecular beam epitaxy equation.

    Science.gov (United States)

    Katzav, Eytan

    2002-03-01

    Motivated by a controversy over the correct results derived from the dynamic renormalization group (DRG) analysis of the nonlinear molecular beam epitaxy (MBE) equation, a self-consistent expansion for the nonlinear MBE theory is considered. The scaling exponents are obtained for spatially correlated noise of the general form D(r-r('),t-t('))=2D(0)[r-->-r(')](2rho-d)delta(t-t(')). I find a lower critical dimension d(c)(rho)=4+2rho, above which the linear MBE solution appears. Below the lower critical dimension a rho-dependent strong-coupling solution is found. These results help to resolve the controversy over the correct exponents that describe nonlinear MBE, using a reliable method that proved itself in the past by giving reasonable results for the strong-coupling regime of the Kardar-Parisi-Zhang system (for d>1), where DRG failed to do so.

  13. In situ observation of stress relaxation in epitaxial graphene

    International Nuclear Information System (INIS)

    N'Diaye, Alpha T; Coraux, Johann; Busse, Carsten; Michely, Thomas; Gastel, Raoul van; Poelsema, Bene; MartInez-Galera, Antonio J; Gomez-RodrIguez, Jose M; Hattab, Hichem; Wall, Dirk; Heringdorf, Frank-J Meyer zu; Hoegen, Michael Horn-von

    2009-01-01

    Upon cooling, branched line defects develop in epitaxial graphene grown at high temperature on Pt(111) and Ir(111). Using atomically resolved scanning tunneling microscopy, we demonstrate that these defects are wrinkles in the graphene layer, i.e. stripes of partially delaminated graphene. With low energy electron microscopy (LEEM), we investigate the wrinkling phenomenon in situ. Upon temperature cycling, we observe hysteresis in the appearance and disappearance of the wrinkles. Simultaneously with wrinkle formation a change in bright field imaging intensity of adjacent areas and a shift in the moire spot positions for micro diffraction of such areas takes place. The stress relieved by wrinkle formation results from the mismatch in thermal expansion coefficients of graphene and the substrate. A simple one-dimensional model taking into account the energies related to strain, delamination and bending of graphene is in qualitative agreement with our observations.

  14. Chemically stabilized epitaxial wurtzite-BN thin film

    Science.gov (United States)

    Vishal, Badri; Singh, Rajendra; Chaturvedi, Abhishek; Sharma, Ankit; Sreedhara, M. B.; Sahu, Rajib; Bhat, Usha; Ramamurty, Upadrasta; Datta, Ranjan

    2018-03-01

    We report on the chemically stabilized epitaxial w-BN thin film grown on c-plane sapphire by pulsed laser deposition under slow kinetic condition. Traces of no other allotropes such as cubic (c) or hexagonal (h) BN phases are present. Sapphire substrate plays a significant role in stabilizing the metastable w-BN from h-BN target under unusual PLD growth condition involving low temperature and pressure and is explained based on density functional theory calculation. The hardness and the elastic modulus of the w-BN film are 37 & 339 GPa, respectively measured by indentation along direction. The results are extremely promising in advancing the microelectronic and mechanical tooling industry.

  15. Study of epitaxial YBa2Cu3Ox films

    International Nuclear Information System (INIS)

    Lee, S.G.; Chi, C.C.; Koren, G.; Gupta, A.; Segmuller, A.

    1990-01-01

    In this paper, the authors present a systematic study of epitaxial YBa 2 Cu 3 O x films laser ablated on Y-cut LiNbO 3 substrates. X-ray diffraction pattern indicates that the c-axis is perpendicular to the substrate plane and the (110) direction of the film is parallel to the (110) of the substrate with two domains with the (110) as a mirror plane. Resistivity of the film shows a typical metallic behavior in the normal state with a sharp transition at 92K. The effects of oxygen deficiency on the resistivity are also studied. Oxygen content is controlled by annealing the sample either in low oxygen pressure or in vacuum and estimated from the c-axis lattice parameter determined by X-ray diffraction. As oxygen is depleted gradually, the film resistivity shows metallic, semiconducting, and eventually insulating behaviors. Superconducting percolation phenomenon is observed for the semiconducting sample at low temperatures

  16. Resistance switching in epitaxial SrCoOx thin films

    Science.gov (United States)

    Tambunan, Octolia T.; Parwanta, Kadek J.; Acharya, Susant K.; Lee, Bo Wha; Jung, Chang Uk; Kim, Yeon Soo; Park, Bae Ho; Jeong, Huiseong; Park, Ji-Yong; Cho, Myung Rae; Park, Yun Daniel; Choi, Woo Seok; Kim, Dong-Wook; Jin, Hyunwoo; Lee, Suyoun; Song, Seul Ji; Kang, Sung-Jin; Kim, Miyoung; Hwang, Cheol Seong

    2014-08-01

    We observed bipolar switching behavior from an epitaxial strontium cobaltite film grown on a SrTiO3 (001) substrate. The crystal structure of strontium cobaltite has been known to undergo topotactic phase transformation between two distinct phases: insulating brownmillerite (SrCoO2.5) and conducting perovskite (SrCoO3-δ) depending on the oxygen content. The current-voltage characteristics of the strontium cobaltite film showed that it could have a reversible insulator-to-metal transition triggered by electrical bias voltage. We propose that the resistance switching in the SrCoOx thin film could be related to the topotactic phase transformation and the peculiar structure of SrCoO2.5.

  17. Resistance switching in epitaxial SrCoOx thin films

    International Nuclear Information System (INIS)

    Tambunan, Octolia T.; Parwanta, Kadek J.; Acharya, Susant K.; Lee, Bo Wha; Jung, Chang Uk; Kim, Yeon Soo; Park, Bae Ho; Jeong, Huiseong; Park, Ji-Yong; Cho, Myung Rae; Park, Yun Daniel; Choi, Woo Seok; Kim, Dong-Wook; Jin, Hyunwoo; Lee, Suyoun; Song, Seul Ji; Kang, Sung-Jin; Kim, Miyoung; Hwang, Cheol Seong

    2014-01-01

    We observed bipolar switching behavior from an epitaxial strontium cobaltite film grown on a SrTiO 3 (001) substrate. The crystal structure of strontium cobaltite has been known to undergo topotactic phase transformation between two distinct phases: insulating brownmillerite (SrCoO 2.5 ) and conducting perovskite (SrCoO 3−δ ) depending on the oxygen content. The current–voltage characteristics of the strontium cobaltite film showed that it could have a reversible insulator-to-metal transition triggered by electrical bias voltage. We propose that the resistance switching in the SrCoO x thin film could be related to the topotactic phase transformation and the peculiar structure of SrCoO 2.5

  18. Coherence in a transmon qubit with epitaxial tunnel junctions

    Energy Technology Data Exchange (ETDEWEB)

    Weides, Martin [National Institute of Standards and Technology, Boulder, Colorado 80305 (United States); Karlsruhe Institute of Technology (Germany); Kline, Jeffrey; Vissers, Michael; Sandberg, Martin; Pappas, David [National Institute of Standards and Technology, Boulder, Colorado 80305 (United States); Wisbey, David [National Institute of Standards and Technology, Boulder, Colorado 80305 (United States); Saint Louis University, St. Louis, Missouri 63103 (United States); Johnson, Blake; Ohki, Thomas [Raytheon BBN Technologies, Cambridge, Massachusetts 02138 (United States)

    2012-07-01

    Transmon qubits based on epitaxial tunnel junctions and interdigitated capacitors were developed. This multileveled qubit, patterned by use of all-optical lithography, is a step towards scalable qubits with a high integration density. The relaxation time T{sub 1} is.72-.86 {mu} sec and the ensemble dephasing time T{sub 2}{sup *} is slightly larger than T{sub 1}. The dephasing time T{sub 2} (1.36 {mu} sec) is nearly energy-relaxation-limited. Qubit spectroscopy yields weaker level splitting than observed in qubits with amorphous barriers in equivalent-size junctions. The qubit's inferred microwave loss closely matches the weighted losses of the individual elements (junction, wiring dielectric, and interdigitated capacitor), determined by independent resonator measurements.

  19. New phenomena in epitaxial growth: solid films on quasicrystalline substrates

    International Nuclear Information System (INIS)

    Fournee, V; Thiel, P A

    2005-01-01

    An overview is given of the research conducted in the field of solid film growth on quasiperiodic surfaces. An atomistic description of quasicrystalline surfaces is presented and discussed in relation to bulk structural models. The various systems for which thin film growth has been attempted so far are reviewed. Emphasis is placed on the nucleation mechanisms of the solid films, on their growth modes in relation to the nature of the deposited metals, on the possibility of intermixing or alloying at the interface and on the epitaxial relationships at the crystal-quasicrystal interfaces. We also describe situations where the deposited elements adopt a quasiperiodic structure, which opens up the possibility of extending our understanding of the relation between quasiperiodicity and the physical properties of such structurally and chemically complex solids. (topical review)

  20. Spin-injection into epitaxial graphene on silicon carbide

    Science.gov (United States)

    Konishi, Keita; Cui, Zhixin; Hiraki, Takahiro; Yoh, Kanji

    2013-09-01

    We have studied the spin-injection properties in epitaxial graphene on SiC. The ferromagnetic metal (FM) electrodes were composed of a tunnel barrier layer AlOx (14 Å) and a ferromagnetic Co (600 Å) layer. We have successfully observed the clear resistance peaks indicating spin-injection both in the "local" and "non-local" spin measurement set-ups at low temperatures. We estimate spin-injection rate of 1% based on "non-local" measurement and 1.6% based on local measurements. Spin-injection rate of multilayer graphene by mechanical exfoliation method was twice as high as single layer graphene on SiC based on "local" measurement.