Transuranium element chalcogenides. Crystallochemistry and Moessbauer spectrometry of neptunium 237 chalcogenides

International Nuclear Information System (INIS)

Thevenin, T.; Pages, M.; Damien, D.

1981-09-01

To study actinide compounds , neptunium 237 has been studied by Moessbauer resonance. The different oxidation degrees of neptunium (7, 6, 5, 4 and 3) have a very important effect on isomeric displacements. In the study of chalcogenides, the isomeric displacement value of NpS 3 confirms the valency 4+ of neptunium in this compound. Results obtained with Np 3 S 5 show two valency state +3 and +4 in this compound. There is a good agreement with the two crystalline sites determined by crystallography [fr

Lattice Dynamics of Gallium Phosphide

International Nuclear Information System (INIS)

Yarnell, J.L.; Warren, J.L.; Wenzel, R.G.; Dean, P.J.

1968-01-01

Dispersion curves for phonons propagating in the [100], [110], and [111] directions in gallium phosphide have been measured using a triple-axis neutron diffraction spectrometer operating in the constant-Q mode. The sample was a pseudo-single crystal which was prepared by gluing together 36 single crystal plates of gallium phosphide 1 to 2.5 cm in diameter and ∼0.07 cm thick. The plates were grown epitaxially on substrates of gallium arsenide or gallium phosphide, and aligned individually by neutron diffraction. Rocking curves for eight reflections symmetrically distributed in the plane of the experiment had full widths at half maximum in the range 0.52° - 0.58° and were approximately Gaussian in shape. Gallium phosphide crystallizes in the zinc blende structure. A group theoretic analysis of the lattice dynamics of this structure and a shell model fit to the measured dispersion curves are presented. Various optical properties of gallium phosphide are discussed in terms of the phonon dispersion curves. In particular, the phonons which assist indirect electronic transitions are identified as those at the zone boundary in the [100] direction (symmetry point X) in agreement with theoretical and experimental indications that the extrema of the conduction and valence bands are at X and Γ (center of the zone), respectively. The LO branches lie above the TO branches throughout the Brillouin zone in contradiction to the predictions of Keyes and Mitra. The shell model fit indicates that the charge on the gallium atom is negative. (author)

Fabrication of boron-phosphide neutron detectors

International Nuclear Information System (INIS)

Fitzsimmons, M.; Pynn, R.

1997-01-01

Boron phosphide is a potentially viable candidate for high neutron flux neutron detectors. The authors have explored chemical vapor deposition methods to produce such detectors and have not been able to produce good boron phosphide coatings on silicon carbide substrates. However, semi-conducting quality films have been produced. Further testing is required

Essential elucidation for preparation of supported nickel phosphide upon nickel phosphate precursor

International Nuclear Information System (INIS)

Liu, Xuguang; Xu, Lei; Zhang, Baoquan

2014-01-01

Preparation of supported nickel phosphide (Ni 2 P) depends on nickel phosphate precursor, generally related to its chemical composition and supports. Study of this dependence is essential and meaningful for the preparation of supported Ni 2 P with excellent catalytic activity. The chemical nature of nickel phosphate precursor is revealed by Raman and UV–vis spectra. It is found that initial P/Ni mole ratio ≥0.8 prohibits the Ni-O-Ni bridge bonding (i.e., nickel oxide). This chemical bonding will not result in Ni 2 P structure, verified by XRD characterization results. The alumina (namely, γ-Al 2 O 3 , θ-Al 2 O 3 , or α-Al 2 O 3 ) with distinct physiochemical properties also results in diverse chemical nature of nickel phosphate, and then different nickel phosphides. The influence of alumina support on producing Ni 2 P was explained by the theory of surface energy heterogeneity, calculated by the NLDFT method based on N 2 -sorption isotherm. The uniform surface energy of α-Al 2 O 3 results only in the nickel phosphosate precursor and thus the Ni 2 P phase. - Graphical abstract: Surface energy heterogeneity in alumina (namely α-Al 2 O 3 , θ-Al 2 O 3 , and γ-Al 2 O 3 ) supported multi-oxidic precursors with different reducibilities and thus diverse nickel phosphides (i.e., Ni 3 P, Ni 12 P 5 , Ni 2 P). - Highlights: • Preparing pure Ni 2 P. • Elucidating nickel phosphate precursor. • Associating with surface energy

Predictors of Poor Prognosis in Aluminum Phosphide Intoxication

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Fakhredin Taghaddosi Nejad

2012-05-01

Full Text Available Background: Aluminum phosphide as a fumigant is extensively used for wheat preservation from rodents and bugs especially in silos worldwide. There is increasing number of acute intoxication with this potentially lethal compound because of its easy availability. We have tried to locate predictors of poor prognosis in patients with aluminum phosphide intoxication in order to find patients who need more strict medical cares. Methods: All cases of aluminum phosphide intoxication that had been referred to our hospital during April 2008 to March 2010 were studied by their medical dossiers. Pertinent data including vital signs, demographic features, clinical and lab findings, and incidence of any complication were collected and analyzed by the relevant statistical methods. Results: Sixty seven cases of aluminum phosphide intoxication were included in the study. 44.8% of them were male. 97% of cases were suicidal. Mean amount of ingestion was 1.23+/- 0.71 tablets. Mortality rate was 41.8%. ECG abnormality and need for mechanical ventilation had negative relation with outcome. Conclusion: Correlation between some findings and complications with outcome in aluminum phosphide intoxication can be used as guidance for risk assessment and treatment planning in the patients.

Microwave-assisted synthesis of transition metal phosphide

Science.gov (United States)

Viswanathan, Tito

2014-12-30

A method of synthesizing transition metal phosphide. In one embodiment, the method has the steps of preparing a transition metal lignosulfonate, mixing the transition metal lignosulfonate with phosphoric acid to form a mixture, and subjecting the mixture to a microwave radiation for a duration of time effective to obtain a transition metal phosphide.

Moringa oleifera extract (Lam) attenuates Aluminium phosphide-induced acute cardiac toxicity in rats.

Science.gov (United States)

Gouda, Ahmed S; El-Nabarawy, Nagla A; Ibrahim, Samah F

2018-01-01

Moringa oleifera extract (Lam) has many antioxidant and protective properties. Objective: to investigate the antioxidant activities of Lam in counteracting the high oxidative stress caused by acute sub-lethal aluminium phosphide (AlP) intoxication in rat heart. These activities will be detected by histopathological examination and some oxidative stress biomarkers. a single sub-lethal dose of Alp (2 mg/kg body weight) was administered orally, and Lam was given orally at a dose (100 mg/kg body weight) one hour after receiving AlP to rats. aluminium phosphide caused significant cardiac histopathological changes with a significant increase in malondialdehyde (MDA); lipid peroxidation marker; and a significant depletion of antioxidant enzymes (catalase and glutathione reductase). However, treatment with Lam protected efficiently the cardiac tissue of intoxicated rats by increasing antioxidants levels with slight decreasing in MDA production compared to untreated group. This study suggested that Moringa oleifera extract could possibly restore the altered cardiac histopathology and some antioxidant power in AlP intoxicated rats, and it could even be used as adjuvant therapy against AlP-induced cardiotoxicity.

Prospects of Colloidal Copper Chalcogenide Nanocrystals

NARCIS (Netherlands)

van der Stam, W.; Berends, A.C.; de Mello-Donega, Celso

2016-01-01

Over the past few years, colloidal copper chalcogenide nanocrystals (NCs) have emerged as promising alternatives to conventional Cd and Pb chalcogenide NCs. Owing to their wide size, shape, and composition tunability, Cu chalcogenide NCs hold great promise for several applications, such as

Pulsed laser deposited amorphous chalcogenide and alumino-silicate thin films and their multilayered structures for photonic applications

Energy Technology Data Exchange (ETDEWEB)

Němec, P. [Department of Graphic Arts and Photophysics, Faculty of Chemical Technology, University of Pardubice, Studentská 573, 53210 Pardubice (Czech Republic); Charrier, J. [FOTON, UMR CNRS 6082, Enssat, 6 rue de Kerampont, BP 80518, 22305 Lannion (France); Cathelinaud, M. [Missions des Ressources et Compétences Technologiques, UPS CNRS 2274, 92195 Meudon (France); Allix, M. [CEMHTI-CNRS, Site Haute Température, Orléans (France); Adam, J.-L.; Zhang, S. [Equipe Verres et Céramiques, UMR-CNRS 6226, Sciences Chimiques de Rennes (SCR), Université de Rennes 1, 35042 Rennes Cedex (France); Nazabal, V., E-mail: virginie.nazabal@univ-rennes1.fr [Department of Graphic Arts and Photophysics, Faculty of Chemical Technology, University of Pardubice, Studentská 573, 53210 Pardubice (Czech Republic); Equipe Verres et Céramiques, UMR-CNRS 6226, Sciences Chimiques de Rennes (SCR), Université de Rennes 1, 35042 Rennes Cedex (France)

2013-07-31

Amorphous chalcogenide and alumino-silicate thin films were fabricated by the pulsed laser deposition technique. Prepared films were characterized in terms of their morphology, chemical composition, and optical properties. Multilayered thin film stacks for reflectors and vertical microcavities were designed for telecommunication wavelength and the window of atmosphere transparency (band II) at 1.54 μm and 4.65 μm, respectively. Bearing in mind the benefit coming from the opportunity of an efficient wavelength tuning or, conversely, to stabilize the photoinduced effects in chalcogenide films as well as to improve their mechanical properties and/or their chemical durability, several pairs of materials from pure chalcogenide layers to chalcogenide/oxide layers were investigated. Different layer stacks were fabricated in order to check the compatibility between dissimilar materials which can have a strong influence on the interface roughness, adhesion, density, and homogeneity, for instance. Three different reflector designs were formulated and tested including all-chalcogenide layers (As{sub 40}Se{sub 60}/Ge{sub 25}Sb{sub 5}S{sub 70}) and mixed chalcogenide-oxide layers (As{sub 40}Se{sub 60}/alumino-silicate and Ga{sub 10}Ge{sub 15}Te{sub 75}/alumino-silicate). Prepared multilayers showed good compatibility between different material pairs deposited by laser ablation despite the diversity of chemical compositions. As{sub 40}Se{sub 60}/alumino-silicate reflector showed the best parameters; its stop band (R > 97% at 8° off-normal incidence) has a bandwidth of ∼ 100 nm and it is centered at 1490 nm. The quality of the different mirrors developed was good enough to try to obtain a microcavity structure for the 1.5 μm telecommunication wavelength made of chalcogenide layers. The microcavity structure consists of Ga{sub 5}Ge{sub 20}Sb{sub 10}S{sub 65} (doped with 5000 ppm of Er{sup 3+}) spacer surrounded by two 10-layer As{sub 40}Se{sub 60}/Ge{sub 25}Sb{sub 5}S{sub 70

A new approach to synthesize supported ruthenium phosphides for hydrodesulfurization

International Nuclear Information System (INIS)

Wang, Qingfang; Wang, Zhiqiang; Yin, Xiaoqian; Zhou, Linxi; Zhang, Minghui

2016-01-01

Highlights: • We bring out a new method to synthesize noble metal phosphides at low temperature. • Both RuP and Ru_2P were synthesized using triphenylphosphine as phosphorus sources. • Ru_2P was the better active phase for HDS than RuP and metal Ru. • RuP/SiO_2 prepared by new method had better HDS activity to that by TPR method. - Abstract: Supported noble metal ruthenium phosphides were synthesized by one-step H_2-thermal treatment method using triphenylphosphine (TPP) as phosphorus sources at low temperatures. Two phosphides RuP and Ru_2P can be prepared by this method via varying the molar ratio of metal salt and TPP. The as-prepared phosphides were characterized by X-ray powder diffraction (XRD), low-temperature N_2 adsorption, CO chemisorption and transmission electronic microscopy (TEM). The supported ruthenium phosphides prepared by new method and conventional method together with contradistinctive metallic ruthenium were evaluated in hydrodesulfurization (HDS) of dibenzothiophene (DBT). The catalytic results showed that metal-rich Ru_2P was the better active phase for HDS than RuP and metal Ru. Besides this, ruthenium phosphide catalyst prepared by new method exhibited superior HDS activity to that prepared by conventional method.

A new approach to synthesize supported ruthenium phosphides for hydrodesulfurization

Energy Technology Data Exchange (ETDEWEB)

Wang, Qingfang [Tianjin Key Laboratory of Water Environment and Resources, Tianjin Normal University, Tianjin 300387 (China); Key Laboratory of Advanced Energy Materials Chemistry (MOE), Collaborative Innovation Center of Chemical Science and Engineering (Tianjin), College of Chemistry, Nankai University, Tianjin 300071 (China); Wang, Zhiqiang [Tianjin Key Laboratory of Water Environment and Resources, Tianjin Normal University, Tianjin 300387 (China); Yin, Xiaoqian; Zhou, Linxi [Key Laboratory of Advanced Energy Materials Chemistry (MOE), Collaborative Innovation Center of Chemical Science and Engineering (Tianjin), College of Chemistry, Nankai University, Tianjin 300071 (China); Zhang, Minghui, E-mail: zhangmh@nankai.edu.cn [Key Laboratory of Advanced Energy Materials Chemistry (MOE), Collaborative Innovation Center of Chemical Science and Engineering (Tianjin), College of Chemistry, Nankai University, Tianjin 300071 (China); College of Chemistry and Environmental Science, Kashgar University, Kashgar 844006 (China)

2016-02-15

Highlights: • We bring out a new method to synthesize noble metal phosphides at low temperature. • Both RuP and Ru{sub 2}P were synthesized using triphenylphosphine as phosphorus sources. • Ru{sub 2}P was the better active phase for HDS than RuP and metal Ru. • RuP/SiO{sub 2} prepared by new method had better HDS activity to that by TPR method. - Abstract: Supported noble metal ruthenium phosphides were synthesized by one-step H{sub 2}-thermal treatment method using triphenylphosphine (TPP) as phosphorus sources at low temperatures. Two phosphides RuP and Ru{sub 2}P can be prepared by this method via varying the molar ratio of metal salt and TPP. The as-prepared phosphides were characterized by X-ray powder diffraction (XRD), low-temperature N{sub 2} adsorption, CO chemisorption and transmission electronic microscopy (TEM). The supported ruthenium phosphides prepared by new method and conventional method together with contradistinctive metallic ruthenium were evaluated in hydrodesulfurization (HDS) of dibenzothiophene (DBT). The catalytic results showed that metal-rich Ru{sub 2}P was the better active phase for HDS than RuP and metal Ru. Besides this, ruthenium phosphide catalyst prepared by new method exhibited superior HDS activity to that prepared by conventional method.

Precursor directed synthesis - ``molecular'' mechanisms in the Soft Chemistry approaches and their use for template-free synthesis of metal, metal oxide and metal chalcogenide nanoparticles and nanostructures

Science.gov (United States)

Seisenbaeva, Gulaim A.; Kessler, Vadim G.

2014-05-01

This review provides an insight into the common reaction mechanisms in Soft Chemistry processes involved in nucleation, growth and aggregation of metal, metal oxide and chalcogenide nanoparticles starting from metal-organic precursors such as metal alkoxides, beta-diketonates, carboxylates and their chalcogene analogues and demonstrates how mastering the precursor chemistry permits us to control the chemical and phase composition, crystallinity, morphology, porosity and surface characteristics of produced nanomaterials.This review provides an insight into the common reaction mechanisms in Soft Chemistry processes involved in nucleation, growth and aggregation of metal, metal oxide and chalcogenide nanoparticles starting from metal-organic precursors such as metal alkoxides, beta-diketonates, carboxylates and their chalcogene analogues and demonstrates how mastering the precursor chemistry permits us to control the chemical and phase composition, crystallinity, morphology, porosity and surface characteristics of produced nanomaterials. To Professor David Avnir on his 65th birthday.

Homogeneity and internal defects detect of infrared Se-based chalcogenide glass

Science.gov (United States)

Li, Zupana; Wu, Ligang; Lin, Changgui; Song, Bao'an; Wang, Xunsi; Shen, Xiang; Dai, Shixunb

2011-10-01

Ge-Sb-Se chalcogenide glasses is a kind of excellent infrared optical material, which has been enviromental friendly and widely used in infrared thermal imaging systems. However, due to the opaque feature of Se-based glasses in visible spectral region, it's difficult to measure their homogeneity and internal defect as the common oxide ones. In this study, a measurement was proposed to observe the homogeneity and internal defect of these glasses based on near-IR imaging technique and an effective measurement system was also constructed. The testing result indicated the method can gives the information of homogeneity and internal defect of infrared Se-based chalcogenide glass clearly and intuitionally.

A Rare but Potentially Fatal Poisoning; Aluminum Phosphide Poisoning

Directory of Open Access Journals (Sweden)

Orkun Tolunay

2017-04-01

Full Text Available Phosphide, a very toxic gas, is used in our country as aluminium phosphide tablets impregnated in clay. It is widely used since it has a very high diffusion capacity, whereby it can eradicate all living creatures in any form of their life cycle and does not leave any remnants in agricultural products. Aluminum phosphide poisoning is among intoxications for which there are still no true antidotes. Mortality rate varies between 30% and 100%. This paper presents a case of aluminum phosphide poisoning caused by the uncompleted suicide attempt. A 14-year-old girl, who swallowed aluminum phosphate tablets, was brought to the emergency department with the complaints of nausea and vomiting. The patient was treated with gastric lavage and activated charcoal. Since the patient ingested a lethal amount of aluminum phosphide, she was referred to the pediatric intensive care unit. The patient was discharged in stable condition after supportive care and monitoring. Specific antidotes are life-saving in poisonings. However, this case was presented to show how general treatment principles and quick access to health services affect the result of treatment. Also, we aimed to highlight the uncontrolled selling of aluminum phosphate, which results in high mortality rates in case of poisoning.

Chalcogenide glass hollow core microstructured optical fibers

Directory of Open Access Journals (Sweden)

Vladimir S. eShiryaev

2015-03-01

Full Text Available The recent developments on chalcogenide glass hollow core microstructured optical fibers (HC-MOFs are presented. The comparative analysis of simulated optical properties for chalcogenide HC-MOFs of negative-curvature with different size and number of capillaries is given. The technique for the manufacture of microstructured chalcogenide preforms, which includes the assembly of the substrate glass tube and 8-10 capillaries, is described. Further trends to improve the optical transmission in chalcogenide NCHCFs are considered.

Polyserositis: An Unusual Complication of Aluminum Phosphide Poisoning

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Ashish Bhalla

2012-12-01

Full Text Available   Background: Aluminum phosphide is the common cause of poisoning in adults in India, with a very high case fatality ratio. We studied five patients of aluminum phosphide poisoning with polyserositis. Methods: We enrolled all patients with aluminum phosphide poisoning presenting to emergency medical department, at a tertiary care hospital in northwestern India from January to July 2006. These patients were managed according to a standard treatment protocol and their complications were recorded. Results: During the study period, total of 35 patients were admitted with 57.5% mortality in the first 12 hours. Among the rest, 5 patients were found to develop polyserositis. All these patients had severe hypotension at presentation and developed respiratory distress requiring mechanical ventilation after an average stay of 3.8 days post-ingestion. They were managed conservatively and four of them were discharged from the hospital after the average stay of 10 days. Conclusion: In this case series, features of polyserositis (pleural effusion, ascites and pericardial effusion were found in 15% patients of severe aluminum phosphide poisoning. We postulate systemic capillary leak syndrome, secondary to mitochondrial damage in the endothelium, as a possible mechanism.        

Thermal expansion and volumetric changes during indium phosphide melting

International Nuclear Information System (INIS)

Glazov, V.M.; Davletov, K.; Nashel'skij, A.Ya.; Mamedov, M.M.

1977-01-01

The results of the measurements of a thermal expansion were summed up at various temperatures as a diagram in coordinates (Δ 1/1) approximately F(t). It was shown that an appreciable deviation of the relationship (Δ1/1) approximately f(t) from the linear law corresponded to a temperature of 500-550 deg C. It was noted that the said deviation was related to an appreciable thermal decomposition of indium phosphide as temperature increased. The strength of the inter-atomic bond of indium phosphide was calculated. Investigated were the volumetric changes of indium phosphide on melting. The resultant data were analyzed with the aid of the Clausius-Clapeyron equation

Solar cells with gallium phosphide/silicon heterojunction

Science.gov (United States)

Darnon, Maxime; Varache, Renaud; Descazeaux, Médéric; Quinci, Thomas; Martin, Mickaël; Baron, Thierry; Muñoz, Delfina

2015-09-01

One of the limitations of current amorphous silicon/crystalline silicon heterojunction solar cells is electrical and optical losses in the front transparent conductive oxide and amorphous silicon layers that limit the short circuit current. We propose to grow a thin (5 to 20 nm) crystalline Gallium Phosphide (GaP) by epitaxy on silicon to form a more transparent and more conducting emitter in place of the front amorphous silicon layers. We show that a transparent conducting oxide (TCO) is still necessary to laterally collect the current with thin GaP emitter. Larger contact resistance of GaP/TCO increases the series resistance compared to amorphous silicon. With the current process, losses in the IR region associated with silicon degradation during the surface preparation preceding GaP deposition counterbalance the gain from the UV region. A first cell efficiency of 9% has been obtained on ˜5×5 cm2 polished samples.

A Plasma-Assisted Route to the Rapid Preparation of Transition-Metal Phosphides for Energy Conversion and Storage

KAUST Repository

Liang, Hanfeng

2017-06-06

Transition-metal phosphides (TMPs) are important materials that have been widely used in catalysis, supercapacitors, batteries, sensors, light-emitting diodes, and magnets. The physical and chemical structure of a metal phosphide varies with the method of preparation as the electronic, catalytic, and magnetic properties of the metal phosphides strongly depend on their synthesis routes. Commonly practiced processes such as solid-state synthesis and ball milling have proven to be reliable routes to prepare TMPs but they generally require high temperature and long reaction time. Here, a recently developed plasma-assisted conversion route for the preparation of TMPs is reviewed, along with their applications in energy conversion and storage, including water oxidation electrocatalysis, sodium-ion batteries, and supercapacitors. The plasma-assisted synthetic route should open up a new avenue to prepare TMPs with tailored structure and morphology for various applications. In fact, the process may be further extended to the synthesis of a wide range of transition-metal compounds such as borides and fluorides at low temperature and in a rapid manner.

Mechanism of hydrodenitrogenation on phosphides and sulfides.

Science.gov (United States)

Oyama, S Ted; Lee, Yong-Kul

2005-02-17

The mechanism of hydrodenitrogenation (HDN) of 2-methylpiperidine was studied over a silica-supported nickel phosphide catalyst (Ni2P/SiO2, Ni/P = 1/2) and a commercial Ni-Mo-S/Al2O3 catalyst in a three-phase trickle-bed reactor operated at 3.1 MPa and 450-600 K. Analysis of the product distribution as a function of contact time indicated that the reaction proceeded in both cases predominantly by a substitution mechanism, with a smaller contribution of an elimination mechanism. Fourier transform infrared spectroscopy (FTIR) of the 2-methylpiperidine indicated that at reaction conditions a piperidinium ion intermediate was formed on both the sulfide and the phosphide. It is concluded that the mechanism of HDN on nickel phosphide is very similar to that on sulfides. The mechanism on the nickel phosphide was also probed by comparing the reactivity of piperidine and several of its derivatives in the presence of 3000 ppm S. The relative elimination rates depended on the structure of the molecules, and followed the sequence: 4-methylpiperidine approximately piperidine > 3-methylpiperidine > 2,6-dimethylpiperidine > 2-methylpiperidine. [Chemical structure: see text] This order of reactivity was not dependent on the number of alpha-H or beta-H atoms in the molecules, ruling out their reaction through a single, simple mechanism. It is likely that the unhindered piperidine molecules reacted by an S(N)2 substitution process and the more hindered 2,6-dimethylpiperidine reacted by an E2 elimination process.

Solubility limit and precipitation kinetics of iron-phosphide in ferritic iron

International Nuclear Information System (INIS)

Suzuki, Shigeru

1992-01-01

The solubility limit of iron-phosphide in ferritic iron was examined with electrical resistivity measurements by using the relationship between resistivity and the amount of dissolved phosphorous. The temperature dependence of the solubility obtained was in good agreement with previous results. The kinetics of precipitation of the phosphide from a supersaturated Fe-3.75 at.% P alloy was also investigated with changes of the resistivity by isochronal and isothermal annealing. The activation energy for the precipitation process of the phosphide was about 2.6 eV. Diffusivities of phosphorus were estimated from the annealing behaviour and the morphology of the precipitates, which were comparable to those obtained with the tracer method previously. This suggests that the precipitation process of phosphide is rate controlled by diffusion of phosphorus in ferritic iron-phosphorus alloys. (orig.) [de

Magnetic chalcogenides in 3 and lower dimensions

Science.gov (United States)

Furdyna, J. K.; Dong, S.-N.; Lee, S.; Liu, X.; Dobrowolska, M.

2018-06-01

In this article we review magnetic phenomena that occur in the chalcogenide family involving transition metals. Magnetic properties displayed by bulk 3D chalcogenides compounds and alloys produced by equilibrium growth methods are discussed. 2D magnetic chalcogenide systems such as epitaxial films and more complex multilayers, whose formation is made possible by epitaxial methods and/or by van der Waals epitaxy, are presented in detail. We present a brief overview of magnetic effects emerging as the dimensionality of chalcogenide materialss is reduced to 1D (nanowires and related structures) and to zero-D (quantum dots formed by both top-down and bottom-up methods).

In situ X-ray absorption fine structure studies on the structure of nickel phosphide catalyst supported on K-USY

CERN Document Server

Kawai, T; Suzuki, S

2003-01-01

Local structure around Ni in a nickel phosphide catalyst supported on K-USY was investigated by an situ X-ray absorption fine structure (XAFS) method during the reduction process of the catalyst and the hydrodesulfurization (HDS) reaction of thiophene. In the passivated sample, Ni phosphide was partially oxidized but after the reduction, 1.1 nm diameter Ni sub 2 P particles were formed with Ni-P and Ni-Ni distances at 0.218 and 0.261 nm, respectively, corresponding to those of bulk Ni sub 2 P. In situ XAFS cleary revealed that the Ni sub 2 P structure was stable under reaction conditions and was an active structure for the HDS process.

High-Purity Glasses Based on Arsenic Chalcogenides

Science.gov (United States)

2001-06-01

Chemical interaction of chalcogenides and some impurities (CS 2, TeO2 ) with the quartz glass at high temperature leads to the thin layers formation...UNCLASSIFIED Defense Technical Information Center Compilation Part Notice ADPO1 1523 TITLE: High-Purity Glasses Based on Arsenic Chalcogenides...Materials Vol. 3, No. 2, June 2001, p. 341 - 349 HIGH-PURITY GLASSES BASED ON ARSENIC CHALCOGENIDES M. F. Churbanov, I. V. Scripachev, G. E. Snopatin, V. S

Aluminium Phosphide Poisoning: Two Pediatric Patients and Two Different Clinical Outcomes

Directory of Open Access Journals (Sweden)

Faruk Ekinci

2017-08-01

Full Text Available Aluminium phosphide is an insecticide that turns into a quite toxic gas called phosphine when contacts with gastric fluids. Aluminium phosphide poisoning causes severe metabolic acidosis, acute respiratory distress syndrome and multi-organ failure with cardiogenic shock. Our first case was an-18-year-old girl admitted to our emergency department two hours after ingestion of one tablet containing 500 mg aluminium phosphide in a suicide attempt. Venoarterial extracorporeal membrane oxygenation was started one hour after initiation of inotropic agents. Despite improvement in hemodynamic status, she developed refractory arrhythmias at the12th hour and she died 22 hours after admission. The second case was a two-year-old girl who was admitted to our emergency department because of observing a piece of aluminum phosphide 500 mg tablet broken in her mouth. Her vital signs were stable in the follow-up. The patient who had no problems in the follow-up was discharged at 48 hours.

Synthesis and catalytic activity of the metastable phase of gold phosphide

Energy Technology Data Exchange (ETDEWEB)

Fernando, Deshani; Nigro, Toni A.E.; Dyer, I.D. [Department of Chemistry, 107 Physical Sciences I, Oklahoma State University, Stillwater, OK 74078 (United States); Alia, Shaun M.; Pivovar, Bryan S. [Chemical and Materials Science Center, National Renewable Energy Laboratory, Golden, CO 80401 (United States); Vasquez, Yolanda, E-mail: yolanda.vasquez@okstate.edu [Department of Chemistry, 107 Physical Sciences I, Oklahoma State University, Stillwater, OK 74078 (United States)

2016-10-15

Recently, transition metal phosphides have found new applications as catalysts for the hydrogen evolution reaction that has generated an impetus to synthesize these materials at the nanoscale. In this work, Au{sub 2}P{sub 3} was synthesized utilizing the high temperature decomposition of tri-n-octylphosphine as a source of elemental phosphorous. Gold nanorods were used as morphological templates with the aim of controlling the shape and size of the resulting gold phosphide particles. We demonstrate that the surface capping ligand of the gold nanoparticle precursors can influence the purity and extent to which the gold phosphide phase will form. Gold nanorods functionalized with 1-dodecanethiol undergo digestive ripening to produce discrete spherical particles that exhibit reduced reactivity towards phosphorous, resulting in low yields of the gold phosphide. In contrast, gold phosphide was obtained as a phase pure product when cetyltrimethylammonium bromide functionalized gold nanorods are used instead. The Au{sub 2}P{sub 3} nanoparticles exhibited higher activity than polycrystalline gold towards the hydrogen evolution reaction. - Graphical abstract: Au{sub 2}P{sub 3} was synthesized utilizing the high temperature decomposition of tri-n-octylphosphine as a source of elemental phosphorous and gold nanoparticles as reactants. We demonstrate that the surface capping ligand of the gold nanoparticle precursors influence the purity and extent to which the Au{sub 2}P{sub 3} phase will form. Gold nanorods functionalized with 1-dodecanethiol undergo digestive ripening to produce discrete spherical particles that exhibit reduced reactivity towards phosphorous, resulting in low yields of the gold phosphide. In contrast, gold phosphide was obtained as a phase pure product when cetyltrimethylammonium bromide functionalized gold nanoparticles are used instead. The Au{sub 2}P{sub 3} nanoparticles exhibited higher activity than polycrystalline gold towards the hydrogen evolution

The intercalation chemistry of layered iron chalcogenide superconductors

Energy Technology Data Exchange (ETDEWEB)

Vivanco, Hector K.; Rodriguez, Efrain E., E-mail: efrain@umd.edu

2016-10-15

The iron chalcogenides FeSe and FeS are superconductors composed of two-dimensional sheets held together by van der Waals interactions, which makes them prime candidates for the intercalation of various guest species. We review the intercalation chemistry of FeSe and FeS superconductors and discuss their synthesis, structure, and physical properties. Before we review the latest work in this area, we provide a brief background on the intercalation chemistry of other inorganic materials that exhibit enhanced superconducting properties upon intercalation, which include the transition metal dichalcogenides, fullerenes, and layered cobalt oxides. From past studies of these intercalated superconductors, we discuss the role of the intercalates in terms of charge doping, structural distortions, and Fermi surface reconstruction. We also briefly review the physical and chemical properties of the host materials—mackinawite-type FeS and β-FeSe. The three types of intercalates for the iron chalcogenides can be placed in three categories: 1.) alkali and alkaline earth cations intercalated through the liquid ammonia technique; 2.) cations intercalated with organic amines such as ethylenediamine; and 3.) layered hydroxides intercalated during hydrothermal conditions. A recurring theme in these studies is the role of the intercalated guest in electron doping the chalcogenide host and in enhancing the two-dimensionality of the electronic structure by spacing the FeSe layers apart. We end this review discussing possible new avenues in the intercalation chemistry of transition metal monochalcogenides, and the promise of these materials as a unique set of new inorganic two-dimensional systems.

The electronic structure of the antimony chalcogenide series: Prospects for optoelectronic applications

Energy Technology Data Exchange (ETDEWEB)

Carey, John J.; Allen, Jeremy P. [School of Chemistry and CRANN, Trinity College Dublin, Dublin 2 (Ireland); Scanlon, David O. [University College London, Kathleen Lonsdale Materials Chemistry, 20 Gordon Street, London WC1H 0AJ (United Kingdom); Diamond Light Source Ltd., Diamond House, Harwell Science and Innovation Campus, Didcot, Oxfordshire OX11 0DE (United Kingdom); Watson, Graeme W., E-mail: watsong@tcd.ie [School of Chemistry and CRANN, Trinity College Dublin, Dublin 2 (Ireland)

2014-05-01

In this study, density functional theory is used to evaluate the electronic structure of the antimony chalcogenide series. Analysis of the electronic density of states and charge density shows that asymmetric density, or ‘lone pairs’, forms on the Sb{sup III} cations in the distorted oxide, sulphide and selenide materials. The asymmetric density progressively weakens down the series, due to the increase in energy of valence p states from O to Te, and is absent for Sb{sub 2}Te{sub 3}. The fundamental and optical band gaps were calculated and Sb{sub 2}O{sub 3}, Sb{sub 2}S{sub 3} and Sb{sub 2}Se{sub 3} have indirect band gaps, while Sb{sub 2}Te{sub 3} was calculated to have a direct band gap at Γ. The band gaps are also seen to reduce from Sb{sub 2}O{sub 3} to Sb{sub 2}Te{sub 3}. The optical band gap for Sb{sub 2}O{sub 3} makes it a candidate as a transparent conducting oxide, while Sb{sub 2}S{sub 3} and Sb{sub 2}Se{sub 3} have suitable band gaps for thin film solar cell absorbers. - Graphical abstract: A schematic illustrating the interaction between the Sb{sup III} cations and the chalcogenide anions and the change in their respective energy levels down the series. - Highlights: • The electronic structure of the antimony chalcogenide series is modelled using DFT. • Asymmetric density is present on distorted systems and absent on the symmetric telluride system. • Asymmetric density is formed from the mixing of Sb 5s and anion p states, where the anti-bonding combination is stabilised by the Sb 5p states. • The asymmetric density weakens down the series due to the increase in energy of chalcogenide p states. • The increase in energy of the anion p states reduces the fundamental and optical band gaps.

Aqueous corrosion of phosphide minerals from iron meteorites: a highly reactive source of prebiotic phosphorus on the surface of the early Earth.

Science.gov (United States)

Pasek, Matthew A; Lauretta, Dante S

2005-08-01

We present the results of an experimental study of aqueous corrosion of Fe-phosphide under conditions relevant to the early Earth. The results strongly suggest that iron meteorites were an important source of reactive phosphorus (P), a requirement for the formation of P-based life. We further demonstrate that iron meteorites were an abundant source of phosphide minerals early in Earth history. Phosphide corrosion was studied in five different solutions: deionized water, deionized water buffered with sodium bicarbonate, deionized water with dissolved magnesium and calcium chlorides, deionized water containing ethanol and acetic acid, and deionized water containing the chlorides, ethanol, and acetic acid. Experiments were performed in the presence of both air and pure Ar gas to evaluate the effect of atmospheric chemistry. Phosphide corrosion in deionized water results in a metastable mixture of mixed-valence, P-bearing ions including pyrophosphate and triphosphate, key components for metabolism in modern life. In a pH-buffered solution of NaHCO(3), the condensed and reduced species diphosphonate is an abundant corrosion product. Corrosion in ethanol- and acetic acid-containing solutions yields additional P-bearing organic molecules, including acetyl phosphonate and a cyclic triphosphorus molecule. Phosphonate is a major corrosion product of all experiments and is the only P-bearing molecule that persists in solutions with high concentrations of magnesium and calcium chlorides, which suggests that phosphonate may have been a primitive oceanic source of P. The stability and reactivity of phosphonate and hypophosphite in solution were investigated to elucidate reaction mechanisms and the role of mineral catalysts on P-solution chemistry. Phosphonate oxidation is rapid in the presence of Fe metal but negligible in the presence of magnetite and in the control sample. The rate of hypophosphite oxidation is independent of reaction substrate.

Precursor directed synthesis--"molecular" mechanisms in the Soft Chemistry approaches and their use for template-free synthesis of metal, metal oxide and metal chalcogenide nanoparticles and nanostructures.

Science.gov (United States)

Seisenbaeva, Gulaim A; Kessler, Vadim G

2014-06-21

This review provides an insight into the common reaction mechanisms in Soft Chemistry processes involved in nucleation, growth and aggregation of metal, metal oxide and chalcogenide nanoparticles starting from metal-organic precursors such as metal alkoxides, beta-diketonates, carboxylates and their chalcogene analogues and demonstrates how mastering the precursor chemistry permits us to control the chemical and phase composition, crystallinity, morphology, porosity and surface characteristics of produced nanomaterials.

A Suicide Attempt Using Zinc Phosphide (A Case Study

Directory of Open Access Journals (Sweden)

Aysenur Sumer Coskun

2013-10-01

Full Text Available Zinc phosphide is a toxin that is added to wheat for use in rodent control and is the active ingredient of rodenticide. A 17 year-old male attempted suicide by drinking pesticide [Zinc PHOSPHIDE (Zn3P2] and was subsequently admitted to the emergency department: the patient’s general condition was poor, he was unconscious and vomiting, the skin had a garlic odor and advanced acidosis was present. The patient was treated symptomatically, followed by mechanical ventilation, and was transferred to a psychiatric clinic on the fifth day.

Amorphous chalcogenide semiconductors for solid state dosimetric systems of high-energetic ionizing radiation

International Nuclear Information System (INIS)

Shpotyuk, O.

1997-01-01

The application possibilities of amorphous chalcogenide semiconductors use as radiation-sensitive elements of high-energetic (E > 1 MeV) dosimetric systems are analysed. It is shown that investigated materials are characterized by more wide region of registered absorbed doses and low temperature threshold of radiation information bleaching in comparison with well-known analogies based on coloring oxide glasses. (author)

Noble-Metal Chalcogenide Nanotubes

Directory of Open Access Journals (Sweden)

Nourdine Zibouche

2014-10-01

Full Text Available We explore the stability and the electronic properties of hypothetical noble-metal chalcogenide nanotubes PtS2, PtSe2, PdS2 and PdSe2 by means of density functional theory calculations. Our findings show that the strain energy decreases inverse quadratically with the tube diameter, as is typical for other nanotubes. Moreover, the strain energy is independent of the tube chirality and converges towards the same value for large diameters. The band-structure calculations show that all noble-metal chalcogenide nanotubes are indirect band gap semiconductors. The corresponding band gaps increase with the nanotube diameter rapidly approaching the respective pristine 2D monolayer limit.

High surface area graphene-supported metal chalcogenide assembly

Science.gov (United States)

Worsley, Marcus A.; Kuntz, Joshua D.; Orme, Christine A.

2017-04-25

Disclosed here is a method for hydrocarbon conversion, comprising contacting at least one graphene-supported assembly with at least one hydrocarbon feedstock, wherein the graphene-supported assembly comprises (i) a three-dimensional network of graphene sheets crosslinked by covalent carbon bonds and (ii) at least one metal chalcogenide compound disposed on the graphene sheets, wherein the chalcogen of the metal chalcogenide compound is selected from S, Se and Te, and wherein the metal chalcogenide compound accounts for at least 20 wt. % of the graphene-supported assembly.

New functionality of chalcogenide glasses for radiation sensing of nuclear wastes.

Science.gov (United States)

Ailavajhala, M S; Gonzalez-Velo, Y; Poweleit, C D; Barnaby, H J; Kozicki, M N; Butt, D P; Mitkova, M

2014-03-30

Data about gamma radiation induced effects in Ge40Se60 chalcogenide thin films and radiation induced silver diffusion within these are presented. Blanket films and devices were created to study the structural changes, diffusion products, and device performance. Raman spectroscopy, X-ray diffraction, current vs. voltage (I-V) and impedance measurements expound the behavior of Ge40Se60 glass and silver diffusion within this glass under radiation. Raman study shows that there is a decrease in the area ratio between edge shared and corner shared structural units revealing structural reorganization occurring in the glasses as a result of gamma radiation. X-ray diffraction studies revealed that with sufficiently radiation dose it is also possible to create Ag2Se in selenium-depleted systems. Oxidation of the Ge enriched chalcogenide backbone is confirmed through the electrical performance of the sensing elements based on these films. Combination of these structural and diffusion products influences the device performance. The I-V behavior is characterized by increase in current and then stabilization as a function of radiation dose. Additionally, device modeling is also presented using Silvaco software and analytical methods to shed light on the device behavior. This type of sensor design and material characterizations facilitate in improving the radiation sensing capabilities of silver containing chalcogenide glass thin films. Copyright © 2013 Elsevier B.V. All rights reserved.

New functionality of chalcogenide glasses for radiation sensing of nuclear wastes

International Nuclear Information System (INIS)

Ailavajhala, M.S.; Gonzalez-Velo, Y.; Poweleit, C.D.; Barnaby, H.J.; Kozicki, M.N.; Butt, D.P.; Mitkova, M.

2014-01-01

Highlights: • Study of thin film chalcogenide glasses under gamma radiation and a proposed radiation sensor design. • Structural changes were observed at various radiation doses. • Formation of Ag 2 Se in Se depleted glasses with sufficient radiation dose. • In conventional semiconductor chip environment, the proposed sensor has a linear current vs. dose behavior up to 600 J/cm 2 . - Abstract: Data about gamma radiation induced effects in Ge 40 Se 60 chalcogenide thin films and radiation induced silver diffusion within these are presented. Blanket films and devices were created to study the structural changes, diffusion products, and device performance. Raman spectroscopy, X-ray diffraction, current vs. voltage (I–V) and impedance measurements expound the behavior of Ge 40 Se 60 glass and silver diffusion within this glass under radiation. Raman study shows that there is a decrease in the area ratio between edge shared and corner shared structural units revealing structural reorganization occurring in the glasses as a result of gamma radiation. X-ray diffraction studies revealed that with sufficiently radiation dose it is also possible to create Ag 2 Se in selenium-depleted systems. Oxidation of the Ge enriched chalcogenide backbone is confirmed through the electrical performance of the sensing elements based on these films. Combination of these structural and diffusion products influences the device performance. The I–V behavior is characterized by increase in current and then stabilization as a function of radiation dose. Additionally, device modeling is also presented using Silvaco software and analytical methods to shed light on the device behavior. This type of sensor design and material characterizations facilitate in improving the radiation sensing capabilities of silver containing chalcogenide glass thin films

New functionality of chalcogenide glasses for radiation sensing of nuclear wastes

Energy Technology Data Exchange (ETDEWEB)

Ailavajhala, M.S., E-mail: m.ailavajhala@gmail.com [Department of Electrical and Computer Engineering, Boise State University, Boise, ID 83725 (United States); Gonzalez-Velo, Y. [School of Electrical, Computer and Energy Engineering, Arizona State University, Tempe, AZ 85287-5706 (United States); Poweleit, C.D. [Department of Physics, Arizona State University, Tempe, AZ 85287-5706 (United States); Barnaby, H.J.; Kozicki, M.N. [School of Electrical, Computer and Energy Engineering, Arizona State University, Tempe, AZ 85287-5706 (United States); Butt, D.P. [Department of Materials Science and Engineering, Boise State University, Boise, ID 83725 (United States); Mitkova, M., E-mail: maheshailavajhala@u.boisestate.edu [Department of Electrical and Computer Engineering, Boise State University, Boise, ID 83725 (United States)

2014-03-01

Highlights: • Study of thin film chalcogenide glasses under gamma radiation and a proposed radiation sensor design. • Structural changes were observed at various radiation doses. • Formation of Ag{sub 2}Se in Se depleted glasses with sufficient radiation dose. • In conventional semiconductor chip environment, the proposed sensor has a linear current vs. dose behavior up to 600 J/cm{sup 2}. - Abstract: Data about gamma radiation induced effects in Ge{sub 40}Se{sub 60} chalcogenide thin films and radiation induced silver diffusion within these are presented. Blanket films and devices were created to study the structural changes, diffusion products, and device performance. Raman spectroscopy, X-ray diffraction, current vs. voltage (I–V) and impedance measurements expound the behavior of Ge{sub 40}Se{sub 60} glass and silver diffusion within this glass under radiation. Raman study shows that there is a decrease in the area ratio between edge shared and corner shared structural units revealing structural reorganization occurring in the glasses as a result of gamma radiation. X-ray diffraction studies revealed that with sufficiently radiation dose it is also possible to create Ag{sub 2}Se in selenium-depleted systems. Oxidation of the Ge enriched chalcogenide backbone is confirmed through the electrical performance of the sensing elements based on these films. Combination of these structural and diffusion products influences the device performance. The I–V behavior is characterized by increase in current and then stabilization as a function of radiation dose. Additionally, device modeling is also presented using Silvaco software and analytical methods to shed light on the device behavior. This type of sensor design and material characterizations facilitate in improving the radiation sensing capabilities of silver containing chalcogenide glass thin films.

Amorphous chalcogenide semiconductors for solid state dosimetric systems of high-energetic ionizing radiation

Energy Technology Data Exchange (ETDEWEB)

Shpotyuk, O. [Pedagogical University, Czestochowa (Poland)]|[Institute of Materials, Lvov (Ukraine)

1997-12-31

The application possibilities of amorphous chalcogenide semiconductors use as radiation-sensitive elements of high-energetic (E > 1 MeV) dosimetric systems are analysed. It is shown that investigated materials are characterized by more wide region of registered absorbed doses and low temperature threshold of radiation information bleaching in comparison with well-known analogies based on coloring oxide glasses. (author). 16 refs, 1 tab.

Solution synthesis of mixed-metal chalcogenide nanoparticles and spray deposition of precursor films

Science.gov (United States)

Schulz, Douglas L.; Curtis, Calvin J.; Ginley, David S.

2000-01-01

A colloidal suspension comprising metal chalcogenide nanoparticles and a volatile capping agent. The colloidal suspension is made by reacting a metal salt with a chalcogenide salt in an organic solvent to precipitate a metal chalcogenide, recovering the metal chalcogenide, and admixing the metal chalcogenide with a volatile capping agent. The colloidal suspension is spray deposited onto a substrate to produce a semiconductor precursor film which is substantially free of impurities.

General Top-Down Ion Exchange Process for the Growth of Epitaxial Chalcogenide Thin Films and Devices

KAUST Repository

Xia, Chuan

2016-12-30

We demonstrate a versatile top-down ion exchange process, done at ambient temperature, to form epitaxial chalcogenide films and devices, with nanometer scale thickness control. To demonstrate the versatility of our process we have synthesized (1) epitaxial chalcogenide metallic and semiconducting films and (2) free-standing chalcogenide films and (3) completed in situ formation of atomically sharp heterojunctions by selective ion exchange. Epitaxial NiCo2S4 thin films prepared by our process show 115 times higher mobility than NiCo2S4 pellets (23 vs 0.2 cm(2) V-1 s(-1)) prepared by previous reports. By controlling the ion exchange process time, we made free-standing epitaxial films of NiCo2S4 and transferred them onto different substrates. We also demonstrate in situ formation of atomically sharp, lateral Schottky diodes based on NiCo2O4/NiCo2S4 heterojunction, using a single ion exchange step. Additionally, we show that our approach can be easily extended to other chalcogenide semiconductors. Specifically, we used our process to prepare Cu1.8S thin films with mobility that matches single crystal Cu1.8S (25 cm(2) V-1 s(-1)), which is ca. 28 times higher than the previously reported Cu1.8S thin film mobility (0.58 cm(2) V-1 s(-1)), thus demonstrating the universal nature of our process. This is the first report in which chalcogenide thin films retain the epitaxial nature of the precursor oxide films, an approach that will be useful in many applications.

Metastable states in amorphous chalcogenide semiconductors

CERN Document Server

Mikla, Victor I

2009-01-01

This book addresses an interesting and technologically important class of materials, the amorphous chalcogenide semiconductors. Experimental results on the structural and electronic metastable states in Se-rich chalcogenides are presented. Special attention is paid to the states in the mobility gap and their sensitivity to various factors such as irradiation, annealing and composition. Photoinduced changes of structure and physical properties are also considered and structural transformation at photocrystallization is studied in detail. Finally, the authors discuss potential applications of th

Terahertz-induced Kerr effect in amorphous chalcogenide glasses

DEFF Research Database (Denmark)

Zalkovskij, Maksim; Strikwerda, Andrew; Iwaszczuk, Krzysztof

2013-01-01

We have investigated the terahertz-induced third-order (Kerr) nonlinear optical properties of the amorphous chalcogenide glasses As2S3 and As2Se3. Chalcogenide glasses are known for their high optical Kerr nonlinearities which can be several hundred times greater than those of fused silica. We use...

Radiation induced traps of zinc phosphate and phosphide

International Nuclear Information System (INIS)

Murali, K.R.; Rao, D.R.

1980-01-01

Thermoluminescence (TL) glow curve (TGC) method has been used to study the traps produced by X-irradiation in Zn 3 (PO 4 ) 2 and Zn 3 P 2 . Prominent TL glow peaks were observed at 100 0 and 360 0 C for zinc phosphate while for zinc phosphide only one glow peak at 245 0 C was observed, and in the latter case the TL output was in general quite low compared to zinc phosphate. The TL spectra for both the glow peaks of zinc phosphate indicated emission band in the region around 560 nm, while for zinc phosphide the emission occurred at 575 nm (in the temperature region 200-270 0 C). The low temperature glow peaks below 270 0 C were less stable compared to those above 300 0 C and were completely destroyed when the irradiated samples were stored in darkness for 24 hr at room temperature. Shining by 470 nm light however produced preferential bleaching of the two TL peaks at 100 and 360 0 C with no effect on the 245 0 C glow peak of zinc phosphide. It is concluded that during heat treatment large numbers of Zn-vacancies are formed due to which complexes like Zn-P are produced by irradiation and the TL traps destroyed in a radiative recombination process are related with these complexes. (author)

Recent Advances in Metal Chalcogenides (MX; X = S, Se) Nanostructures for Electrochemical Supercapacitor Applications: A Brief Review

Science.gov (United States)

Theerthagiri, Jayaraman; Durai, Govindarajan; Rana, Abu ul Hassan Sarwar; Sangeetha, Kirubanandam; Kuppusami, Parasuraman; Kim, Hyun-Seok

2018-01-01

Supercapacitors (SCs) have received a great deal of attention and play an important role for future self-powered devices, mainly owing to their higher power density. Among all types of electrical energy storage devices, electrochemical supercapacitors are considered to be the most promising because of their superior performance characteristics, including short charging time, high power density, safety, easy fabrication procedures, and long operational life. An SC consists of two foremost components, namely electrode materials, and electrolyte. The selection of appropriate electrode materials with rational nanostructured designs has resulted in improved electrochemical properties for high performance and has reduced the cost of SCs. In this review, we mainly spotlight the non-metallic oxide, especially metal chalcogenides (MX; X = S, Se) based nanostructured electrode materials for electrochemical SCs. Different non-metallic oxide materials are highlighted in various categories, such as transition metal sulfides and selenides materials. Finally, the designing strategy and future improvements on metal chalcogenide materials for the application of electrochemical SCs are also discussed. PMID:29671823

Recent Advances in Layered Metal Chalcogenides as Superconductors and Thermoelectric Materials: Fe-Based and Bi-Based Chalcogenides.

Science.gov (United States)

Mizuguchi, Yoshikazu

2016-04-01

Recent advances in layered (Fe-based and Bi-based) chalcogenides as superconductors or functional materials are reviewed. The Fe-chalcogenide (FeCh) family are the simplest Fe-based high-Tc superconductors. The superconductivity in the FeCh family is sensitive to external or chemical pressure, and high Tc is attained when the local structure (anion height) is optimized. The Bi-chalcogenide (BiCh2) family are a new group of layered superconductors with a wide variety of stacking structures. Their physical properties are also sensitive to external or chemical pressure. Recently, we revealed that the emergence of superconductivity and the Tc in this family correlate with the in-plane chemical pressure. Since the flexibility of crystal structure and electronic states are an advantage of the BiCh2 family for designing functionalities, I briefly review recent developments in this family as not only superconductors but also other functional materials. © 2016 The Chemical Society of Japan & Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

Low temperature synthesis of ternary metal phosphides using plasma for asymmetric supercapacitors

KAUST Repository

Liang, Hanfeng

2017-04-06

We report a versatile route for the preparation of metal phosphides using PH plasma for supercapacitor applications. The high reactivity of plasma allows rapid and low temperature conversion of hydroxides into monometallic, bimetallic, or even more complex nanostructured phosphides. These same phosphides are much more difficult to synthesize by conventional methods. Further, we present a general strategy for significantly enhancing the electrochemical performance of monometallic phosphides by substituting extrinsic metal atoms. Using NiCoP as a demonstration, we show that the Co substitution into NiP not only effectively alters the electronic structure and improves the intrinsic reactivity and electrical conductivity, but also stabilizes Ni species when used as supercapacitor electrode materials. As a result, the NiCoP nanosheet electrodes achieve high electrochemical activity and good stability in 1 M KOH electrolyte. More importantly, our assembled NiCoP nanoplates//graphene films asymmetric supercapacitor devices can deliver a high energy density of 32.9 Wh kg at a power density of 1301 W kg, along with outstanding cycling performance (83% capacity retention after 5000 cycles at 20 A g). This activity outperforms most of the NiCo-based materials and renders the NiCoP nanoplates a promising candidate for capacitive storage devices.

Synthesis of uniform-sized bimetallic iron-nickel phosphide nanorods

International Nuclear Information System (INIS)

Yoon, Ki Youl; Jang, Youngjin; Park, Jongnam; Hwang, Yosun; Koo, Bonil; Park, Je-Geun; Hyeon, Taeghwan

2008-01-01

We synthesized uniform-sized nanorods of iron-nickel phosphides from the thermal decomposition of metal-phosphine complexes. Uniform-sized (Fe x Ni 1-x ) 2 P nanorods (0≤x≤1) of various compositions were synthesized by thermal decomposition of Ni-trioctylphosphine (TOP) complex and Fe-TOP complex. By measuring magnetic properties, we found that blocking temperature and coercive field depend on Ni content in the nanorods. Both parameters were more sensitive to doping compared with bulk samples. - Graphical abstract: We synthesized uniform-sized nanorods of iron-nickel phosphides from thermal decomposition of metal-phosphine complexes. The magnetic studies showed that blocking temperature and coercive field depend on Ni content in the nanorods

Chalcogenides Metastability and Phase Change Phenomena

CERN Document Server

Kolobov, Alexander V

2012-01-01

A state-of-the-art description of metastability observed in chalcogenide alloys is presented with the accent on the underlying physics. A comparison is made between sulphur(selenium)-based chalcogenide glasses, where numerous photo-induced phenomena take place entirely within the amorphous phase, and tellurides where a reversible crystal-to-amorphous phase-change transformation is a major effect. Applications of metastability in devices¿optical memories and nonvolatile electronic phase-change random-access memories among others are discussed, including the latest trends. Background material essential for understanding current research in the field is also provided.

Aluminum Phosphide; the Most Fatal Rodenticide and Fungicide

International Nuclear Information System (INIS)

Afshari, R.

2007-01-01

Introduction: Aluminum phosphide (AP) is a fumigate agent, which is also used to control rodents and pests in grain storage facilities. This agent is commonly used in low income and agricultural communities. AP is easily available, cheap and highly toxic. Ingestion of even half a fresh tablet invariably results in death. Its suicidal or accidental poisoning is a medical emergency, while in some low income countries it reaches to more than two third of poisoning deaths. Methods: PubMed was systematically searched (December 2006) for articles related to aluminium phosphide poisoning. 24 articles were finally included. Mechanism of action; AP on exposure to moisture, liberates highly toxic gas, phosphine. In animal and human models AP rapidly inhibits cytochrome-c oxidase leading to inhibition of mitochondrial oxidative phosphorylation and inhibits mitochondrial respiration and has cytotoxic action. Clinical Findings: Initial findings of intoxication may be nonspecific and transient. The symptoms may resolve within several hours after removal from exposure. It, however, produces phosphine gas, which is a mitochondrial poison. Its manufacturing and application pose risks of inhalation of phosphine. CNS; GCS is fine at the beginning. Biochemistry; Metabolic acidosis and liver dysfunction are reported. Shock is frequent. Respiratory Tract; Acute dyspnoea, hypotension, bradycardia and other signs of intoxication were also stated. Gastrointestinal; Reported short-segment esophageal strictures in the upper and mid esophagus, successfully managed by endoscopic dilatation. In sub-chronic use, degenerative changes in liver, heart and kidney of rabbits are reported. Cardiovascular; The ECG abnormalities are common and include hypotension, bradycardia, ST-T changes, Supraventricular tachycardia, ventricular ectopics, life threatening ventricular tachycardia, ventricular fibrillation, atrial flutter/fibrillation, variable degrees of heart block and toxic myocarditis. Haematologic

Chalcogenide phase-change thin films used as grayscale photolithography materials.

Science.gov (United States)

Wang, Rui; Wei, Jingsong; Fan, Yongtao

2014-03-10

Chalcogenide phase-change thin films are used in many fields, such as optical information storage and solid-state memory. In this work, we present another application of chalcogenide phase-change thin films, i.e., as grayscale photolithgraphy materials. The grayscale patterns can be directly inscribed on the chalcogenide phase-change thin films by a single process through direct laser writing method. In grayscale photolithography, the laser pulse can induce the formation of bump structure, and the bump height and size can be precisely controlled by changing laser energy. Bumps with different height and size present different optical reflection and transmission spectra, leading to the different gray levels. For example, the continuous-tone grayscale images of lifelike bird and cat are successfully inscribed onto Sb(2)Te(3) chalcogenide phase-change thin films using a home-built laser direct writer, where the expression and appearance of the lifelike bird and cat are fully presented. This work provides a way to fabricate complicated grayscale patterns using laser-induced bump structures onto chalcogenide phase-change thin films, different from current techniques such as photolithography, electron beam lithography, and focused ion beam lithography. The ability to form grayscale patterns of chalcogenide phase-change thin films reveals many potential applications in high-resolution optical images for micro/nano image storage, microartworks, and grayscale photomasks.

Uptake of hazardous radionuclides within layered chalcogenide for environmental protection

Energy Technology Data Exchange (ETDEWEB)

Sengupta, Pranesh, E-mail: praneshsengupta@gmail.com [Materials Science Division, Bhabha Atomic Research Centre, Mumbai 400 085 (India); Dudwadkar, N.L. [Fuel Reprocessing Division, Bhabha Atomic Research Centre, Mumbai 400 085 (India); Vishwanadh, B. [Materials Science Division, Bhabha Atomic Research Centre, Mumbai 400 085 (India); Pulhani, V. [Health Physics Division, Bhabha Atomic Research Centre, Mumbai 400 085 (India); Rao, Rekha [Solid State Physics Division, Bhabha Atomic Research Centre, Mumbai 400 085 (India); Tripathi, S.C. [Fuel Reprocessing Division, Bhabha Atomic Research Centre, Mumbai 400 085 (India); Dey, G.K. [Materials Science Division, Bhabha Atomic Research Centre, Mumbai 400 085 (India)

2014-02-15

Highlights: • Layered chalcogenide with CdI{sub 2} crystal structure prepared by hydrothermal route. • Exploration of the possibilities for radionuclides’ uptake using layered chalcogenide. • Proposing ‘topotactic ionic substitution’ as major uptake mechanism. -- Abstract: Ensuring environmental protection in and around nuclear facilities is a matter of deep concern. Toward this, layered chalcogenide with CdI{sub 2} crystal structure has been prepared. Structural characterizations of layered chalcogenide suggest ‘topotactic ionic substitution’ as the dominant mechanism behind uptake of different cations within its lattice structure. An equilibration time of 45 min and volume to mass ratio of 30:1 are found to absorb {sup 233}U, {sup 239}Pu, {sup 106}Ru, {sup 85+89}Sr, {sup 137}Cs and {sup 241}Am radionuclides to the maximum extents.

Summary of Chalcogenide Glass Processing: Wet-Etching and Photolithography

Energy Technology Data Exchange (ETDEWEB)

Riley, Brian J.; Sundaram, S. K.; Johnson, Bradley R.; Saraf, Laxmikant V.

2006-12-01

This report describes a study designed to explore the different properties of two different chalcogenide materials, As2S3 and As24S38Se38, when subjected to photolithographic wet-etching techniques. Chalcogenide glasses are made by combining chalcogen elements S, Se, and Te with Group IV and/or V elements. The etchant was selected from the literature and was composed of sodium hydroxide, isopropyl alcohol, and deionized water and the types of chalcogenide glass for study were As2S3 and As24S38Se38. The main goals here were to obtain a single variable etch rate curve of etch depth per time versus NaOH overall solution concentration in M and to see the difference in etch rate between a given etchant when used on the different chalcogenide stoichiometries. Upon completion of these two goals, future studies will begin to explore creating complex, integrated photonic devices via these methods.

Changes in Some Hematology Parameters in poisoning with Rice Tablet (Aluminum Phosphide)

OpenAIRE

Farshid Fayyaz (PhD)

2015-01-01

Background and Objective: Aluminum Phosphide (ALP) is a solid non-organic phosphide with dark gray or dark yellow crystals. It reacts with stomach acid after ingestion and causes phosphine gas to be released. It is thought that phosphine causes toxicity from enzymatic interference and may even lead to cell death. This study aimed to investigate the effects of poisoning with rice tablet on levels of platelets, hemoglobin, white blood cells. Methods: The clinical records of 67 cases of acute...

Zinc phosphide toxicity with a trial of tranexamic acid in its management

Directory of Open Access Journals (Sweden)

Abdel Rahman M. El Naggar

2011-04-01

Full Text Available Zinc phosphide is a highly effective rodenticide used widely to protect grain in stores and domestically to kill rodents. Acute poisoning may be direct by ingestion or indirect through accidental inhalation of phosphine gas generated during its use. This study aims to identify the patterns of intoxication with zinc phosphide among Egyptian patients admitted to the National Egyptian Center of Clinical and Environmental Toxicological Research (NECTR; to study the role of antifibrinolytics in management of zinc phosphide toxicity; and to publish the results of the study, which include recommendations for action towards planning prevention and education programs. The study provides descriptive data and analysis of 188 cases admitted to the NECTR with acute zinc phosphide poisoning over a period of 22 months. Results show that poisoning is more common among females (60.6% of cases than males (39.4%; the mean age is nearly 21 years old. The most common cause of poisoning is suicidal attempts (83.6% followed by accidental exposure (16.4%. The most common causative factors that lead to self-poisoning are marital disharmony, economic hardship, social problems and scolding from other family members. Signs and symptoms of toxicity include gastrointestinal disturbances, respiratory compromise and changes in mental status. Other features include disseminated intravascular coagulation, hepatic and renal impairment. Metabolic disturbances had been reported. Death can result immediately due to pulmonary edema or delayed due to cardiotoxicity. Patients must be admitted to hospital and observed for at least 3 days. Symptomatic and supportive care is the mainstay of therapy. Zinc phosphide poisoning requires gastric lavage with excessive sodium bicarbonate solution. Tranexamic acid – an antifibrinolytic agent – was found to be of help in some cases. Psychosocial counseling in cases of intentional poisoning is an important aspect of overall management of the

Metal chalcogenide nanostructures for renewable energy applications

CERN Document Server

Qurashi, Ahsanulhaq

2014-01-01

This first ever reference book that focuses on metal chalcogenide semiconductor nanostructures for renewable energy applications encapsulates the state-of-the-art in multidisciplinary research on the metal chalcogenide semiconductor nanostructures (nanocrystals, nanoparticles, nanorods, nanowires,  nanobelts, nanoflowers, nanoribbons and more).  The properties and synthesis of a class of nanomaterials is essential to renewable energy manufacturing and this book focuses on the synthesis of metal chalcogendie nanostructures, their growth mechanism, optical, electrical, and other important prop

Enhanced activity and durability of platinum anode catalyst by the modification of cobalt phosphide for direct methanol fuel cells

International Nuclear Information System (INIS)

Li, Xiang; Wang, Hongjuan; Yu, Hao; Liu, Ziwu; Wang, Haihui; Peng, Feng

2015-01-01

Graphical abstract: A novel Pt/CoP/CNTs electrocatalyst with has been designed and prepared, which exhibits high activity and stability for methanol oxidation reaction. - Highlights: • Pt-cobalt phosphide catalyst supported on carbon nanotubes (Pt/CoP/CNTs) is designed. • Pt/CoP/CNTs exhibit high activity and stability for methanol oxidation reaction(MOR). • The effect of CoP content on electrocatalytic performances for MOR is studied. • CoP decreases the Pt particle size and increases the electrochemical surface areas. • The interaction between Pt and CoP is evidenced by X-ray photoelectron spectroscopy. - Abstract: In this study, carbon nanotubes (CNTs) supported Pt-cobalt phosphide (CoP) electrocatalyst (Pt/CoP/CNTs) is designed and prepared for methanol oxidation (MOR) for the first time. The modification of CoP decreases the Pt particle size significantly and increases the electrochemical surface areas due to the interaction between Pt and CoP, which is evidenced by transmission electron microscopy, X-ray diffraction and X-ray photoelectron spectroscopy. Among all these catalysts, Pt/4%CoP/CNTs catalyst exhibits the best MOR activity of 1600 mA mg −1 Pt , which is six times that of Pt/CNTs. Moreover, this catalyst also exhibits the higher onset current density and steady current density than the other Pt-based catalysts. The work provides a promising method to develop the highly active and stable Pt-based catalyst for direct methanol fuel cells.

Indium phosphide space solar cell research: Where we are and where we are going

Science.gov (United States)

Jain, R. K.; Flood, D. J.; Weinberg, Irving

1995-01-01

Indium phosphide is considered to be a strong contender for many photovoltaic space applications because of its radiation resistance and its potential for high efficiency. An overview of recent progress is presented, and possible future research directions for indium phosphide space solar cells are discussed. The topics considered include radiation damage studies and space flight experiments.

First-principles study of the structural and electronic properties of III-phosphides

Energy Technology Data Exchange (ETDEWEB)

Ahmed, Rashid [Centre for High Energy Physics, University of the Punjab, Lahore 54590 (Pakistan)], E-mail: rasofi@hotmail.com; Fazal-e-Aleem [Centre for High Energy Physics, University of the Punjab, Lahore 54590 (Pakistan); Hashemifar, S. Javad; Akbarzadeh, Hadi [Department of Physics, Isfahan University of Technology, Isfahan 84156 (Iran, Islamic Republic of)

2008-05-01

We use density functional theory and different forms of the exchange-correlation approximation to calculate the structural and electronic properties of tetrahedrally coordinated III-phosphide semiconductors. The computed results for structural properties using generalized gradient approximation (GGA) agree well with the experimental data. For reliable description of energy band gap values, another form of GGA developed by Engel and Vosko has been applied. As anticipated, boron phosphide was found to be the hardest compound due to the strong B-P covalent bonding.

Chalcogenide Sensitized Carbon Based TiO2 Nanomaterial For Solar Driven Applications

Science.gov (United States)

Pathak, Pawan

sensitized photoanode using the one pot method. Finally, the charge transportation effect of carbon allotropes has been studied. For this we assembled TiO2 conductive carbon chalcogenide nanocomposite system. Surface and elemental characterization using electron microscopy, EDX (energy dispersive x-ray) and x-ray diffraction pattern, provide the insights into the assembly of the nanostructure. Optical absorbance, Photo chronometry, Linear sweep voltammetry, and electrochemical impedance analysis have been used to provide opto-electronic performance of the material. We have studied the loading effect of various carbon allotropes, [fullerene (C 60), reduced graphene oxide (RGO), carbon nanotubes (CNTs), and graphene quantum dots (GQDs)], loading effect of chalcogenide, and effect of nitrogen doping on the carbon allotropes to optimize the performance of the heterostructure. This dissertation is expected to impact the materials synthesis strategies and assemble the nanostructures used in composite electrode driven applications in the area of photo electrochemistry, PV, solar-fuels, and other associated topics of energy storage and sensing.

Iron chalcogenide superconductors at high magnetic fields

Science.gov (United States)

Lei, Hechang; Wang, Kefeng; Hu, Rongwei; Ryu, Hyejin; Abeykoon, Milinda; Bozin, Emil S; Petrovic, Cedomir

2012-01-01

Iron chalcogenide superconductors have become one of the most investigated superconducting materials in recent years due to high upper critical fields, competing interactions and complex electronic and magnetic phase diagrams. The structural complexity, defects and atomic site occupancies significantly affect the normal and superconducting states in these compounds. In this work we review the vortex behavior, critical current density and high magnetic field pair-breaking mechanism in iron chalcogenide superconductors. We also point to relevant structural features and normal-state properties. PMID:27877518

Hybrid polymer photonic crystal fiber with integrated chalcogenide glass nanofilms

DEFF Research Database (Denmark)

Markos, Christos; Kubat, Irnis; Bang, Ole

2014-01-01

The combination of chalcogenide glasses with polymer photonic crystal fibers (PCFs) is a difficult and challenging task due to their different thermo-mechanical material properties. Here we report the first experimental realization of a hybrid polymer-chalcogenide PCF with integrated As2S3 glass...... nanofilms at the inner surface of the air-channels of a poly-methyl-methacrylate (PMMA) PCF. The integrated high refractive index glass films introduce distinct antiresonant transmission bands in the 480-900 nm wavelength region. We demonstrate that the ultra-high Kerr nonlinearity of the chalcogenide glass...

Nonlinear optical localization in embedded chalcogenide waveguide arrays

International Nuclear Information System (INIS)

Li, Mingshan; Huang, Sheng; Wang, Qingqing; Chen, Kevin P.; Petek, Hrvoje

2014-01-01

We report the nonlinear optical localization in an embedded waveguide array fabricated in chalcogenide glass. The array, which consists of seven waveguides with circularly symmetric cross sections, is realized by ultrafast laser writing. Light propagation in the chalcogenide waveguide array is studied with near infrared laser pulses centered at 1040 nm. The peak intensity required for nonlinear localization for the 1-cm long waveguide array was 35.1 GW/cm 2 , using 10-nJ pulses with 300-fs pulse width, which is 70 times lower than that reported in fused silica waveguide arrays and with over 7 times shorter interaction distance. Results reported in this paper demonstrated that ultrafast laser writing is a viable tool to produce 3D all-optical switching waveguide circuits in chalcogenide glass

Acetaminophen and zinc phosphide for lethal management of invasive lizards Ctenosaura similis

Directory of Open Access Journals (Sweden)

Michael L. AVERY, John D. EISEMANN, Kandy L. KEACHER,Peter J. SAVARIE

2011-10-01

Full Text Available Reducing populations of invasive lizards through trapping and shooting is feasible in many cases but effective integrated management relies on a variety of tools, including toxicants. In Florida, using wild-caught non-native black spiny-tailed iguanas Ctenosaura similis, we screened acetaminophen and zinc phosphide to determine their suitability for effective population management of this prolific invasive species. Of the animals that received acetaminophen, none died except at the highest test dose, 240 mg per lizard, which is not practical for field use. Zinc phosphide produced 100% mortality at dose levels as little as 25 mg per lizard, equivalent to about 0.5% in bait which is lower than currently used in commercial baits for commensal rodent control. We conclude that zinc phosphide has potential as a useful tool for reducing populations of invasive lizards such as the black spiny-tailed iguana provided target-selective delivery methods are developed [Current Zoology 57 (5: 625–629, 2011].

A CASE REPORT ON ZINC PHOSPHIDE POISONING AND ITS RARE EFFECTS

Directory of Open Access Journals (Sweden)

Naga Raghunandan Thota

2017-02-01

Full Text Available BACKGROUND Zinc phosphide is widely in use as a rodenticide. After ingestion, it gets converted to phosphine gas, which is subsequently absorbed into the bloodstream through the stomach and the intestines and gets captured by the liver and the lungs. The toxic effects of zinc phosphide poisoning is through the phosphine gas that produces various metabolic and non-metabolic intermediate compounds. Patients develop features of shock, myocarditis, pericarditis, acute pulmonary oedema and congestive heart failure. In this case report, we present a common complication of the poison that manifested earlier than it is depicted in the current literature.

Phonon properties of americium phosphide

Energy Technology Data Exchange (ETDEWEB)

Arya, B. S., E-mail: bsarya13@yahoo.com [Department of Physics, Govt. Narmada P G College, Hoshangabad -461001 (India); Aynyas, Mahendra [Department of Physics, C. S. A. Govt. P. G. College Sehore-46601 (India); Sanyal, S. P. [Department of Physics, Barkatullah University, Bhopal-462026 (India)

2016-05-23

Phonon properties of AmP have been studied by using breathing shell models (BSM) which includes breathing motion of electrons of the Am atoms due to f-d hybridization. The phonon dispersion curves, specific heat calculated from present model. The calculated phonon dispersion curves of AmP are presented follow the same trend as observed in uranium phosphide. We discuss the significance of this approach in predicting the phonon dispersion curves of these compounds and examine the role of electron-phonon interaction.

Solvent properties of hydrazine in the preparation of metal chalcogenide bulk materials and films.

Science.gov (United States)

Yuan, Min; Mitzi, David B

2009-08-21

A combination of unique solvent properties of hydrazine enables the direct dissolution of a range of metal chalcogenides at ambient temperature, rendering this an extraordinarily simple and soft synthetic approach to prepare new metal chalcogenide-based materials. The extended metal chalcogenide parent framework is broken up during this process, and the resulting metal chalcogenide building units are re-organized into network structures (from 0D to 3D) based upon their interactions with the hydrazine/hydrazinium moieties. This Perspective will review recent crystal and materials chemistry developments within this family of compounds and will briefly discuss the utility of this approach in metal chalcogenide thin-film deposition.

Carbon nanotube-chalcogenide composite

Czech Academy of Sciences Publication Activity Database

Stehlík, Š.; Orava, J.; Kohoutek, T.; Wágner, T.; Frumar, M.; Zima, Vítězslav; Hara, T.; Matsui, Y.; Ueda, K.; Pumera, M.

2010-01-01

Roč. 183, č. 1 (2010), s. 144-149 ISSN 0022-4596 R&D Projects: GA ČR GA203/08/0208 Institutional research plan: CEZ:AV0Z40500505 Keywords : carbon nanotubes * chalcogenide glasses * composites Subject RIV: CA - Inorganic Chemistry Impact factor: 2.261, year: 2010

Wurtzite gallium phosphide has a direct-band gap

NARCIS (Netherlands)

Assali, S.; Zardo, I.; Plissard, S.; Verheijen, M.A.; Haverkort, J.E.M.; Bakkers, E.P.A.M.

2013-01-01

Gallium Phosphide (GaP) with the normal cubic crystal structure has an indirect band gap, which severely limits the emission efficiency. We report the fabrication of GaP nanowires with pure hexagonal crystal structure and demonstrate the direct nature of the band gap. We observe strong

Dry etching of thin chalcogenide films

Energy Technology Data Exchange (ETDEWEB)

Petkov, Kiril [Acad. J. Malinowski Central Laboratory of Photoprocesses, Bulgarian Academy of Sciences, Acad. G. Bonchev Str., Bl. 109, 1113 Sofia (Bulgaria); Vassilev, Gergo; Vassilev, Venceslav, E-mail: kpetkov@clf.bas.b [Department of Semiconductors, University of Chemical Technology and Metallurgy, 8 Kl. Ohridsky Blvd., 1756 Sofia (Bulgaria)

2010-04-01

Fluorocarbon plasmas (pure and mixtures with Ar) were used to investigate the changes in the etching rate depending on the chalcogenide glasses composition and light exposure. The experiments were performed on modified commercial HZM-4 vacuum equipment in a diode electrode configuration. The surface microstructure of thin chalcogenide layers and its change after etching in CCl{sub 2}F{sub 2} and CF{sub 4} plasmas were studied by SEM. The dependence of the composition of As-S-Ge, As-Se and multicomponent Ge-Se-Sb-Ag-I layers on the etching rate was discussed. The selective etching of some glasses observed after light exposure opens opportunities for deep structure processing applications.

Visible-active photocatalytic behaviors observed in nanostructured lead chalcogenides PbX (X = S, Se, Te)

International Nuclear Information System (INIS)

Qiao, Li-Na; Wang, H.C.; Shen, Y.; Lin, Yuan-Hua; Nan, Ce-Wen

2016-01-01

Nanostructured lead chalcogenides (PbX, X = Te, Se, S) were prepared via a simple hydrothermal method. The powder samples were characterized by XRD, SEM, SAED and DRS. Phase composition and microstructure analysis indicate that these samples are pure lead chalcogenides phases and have similar morphologies. These lead chalcogenides display efficient absorption in the UV-visible light range. The photocatalytic properties of lead chalcogenides nanoparticles were evaluated by the photodegradation of Congo red under UV-visible light irradiation in air atmosphere. The Congo red solution can be efficiently degraded under visible light in the presence of lead chalcogenides nanoparticles. The photocatalytic activities of lead chalcogenides generally increase with increasing their band gaps and shows no appreciable loss after repeated cycles. Our results may be useful for developing new photocatalyst systems responsive to visible light among narrow band gap semiconductors

Thermal Properties and Phonon Spectral Characterization of Synthetic Boron Phosphide for High Thermal Conductivity Applications.

Science.gov (United States)

Kang, Joon Sang; Wu, Huan; Hu, Yongjie

2017-12-13

Heat dissipation is an increasingly critical technological challenge in modern electronics and photonics as devices continue to shrink to the nanoscale. To address this challenge, high thermal conductivity materials that can efficiently dissipate heat from hot spots and improve device performance are urgently needed. Boron phosphide is a unique high thermal conductivity and refractory material with exceptional chemical inertness, hardness, and high thermal stability, which holds high promises for many practical applications. So far, however, challenges with boron phosphide synthesis and characterization have hampered the understanding of its fundamental properties and potential applications. Here, we describe a systematic thermal transport study based on a synergistic synthesis-experimental-modeling approach: we have chemically synthesized high-quality boron phosphide single crystals and measured their thermal conductivity as a record-high 460 W/mK at room temperature. Through nanoscale ballistic transport, we have, for the first time, mapped the phonon spectra of boron phosphide and experimentally measured its phonon mean free-path spectra with consideration of both natural and isotope-pure abundances. We have also measured the temperature- and size-dependent thermal conductivity and performed corresponding calculations by solving the three-dimensional and spectral-dependent phonon Boltzmann transport equation using the variance-reduced Monte Carlo method. The experimental results are in good agreement with that predicted by multiscale simulations and density functional theory, which together quantify the heat conduction through the phonon mode dependent scattering process. Our finding underscores the promise of boron phosphide as a high thermal conductivity material for a wide range of applications, including thermal management and energy regulation, and provides a detailed, microscopic-level understanding of the phonon spectra and thermal transport mechanisms of

Optical and Electrical Characterization of Melt-Grown Bulk Indium Gallium Arsenide and Indium Arsenic Phosphide Alloys

Science.gov (United States)

2011-03-01

spectrum, photoluminescence (PL), and refractive index measurements. Other methods such as infrared imagery and micro probe wavelength dispersing ...States. AFIT/DS/ENP/11-M02 OPTICAL AND ELECTRICAL CHARACTERIZATION OF MELT- GROWN BULK INDIUM GALLIUM ARSENIDE AND INDIUM ARSENIC PHOSPHIDE ...CHARACTERIZATION OF MELT-GROWN BULK INDIUM GALLIUM ARSENIDE AND INDIUM ARSENIC PHOSPHIDE ALLOYS Jean Wei, BS, MS Approved

Low-loss, submicron chalcogenide integrated photonics with chlorine plasma etching

Energy Technology Data Exchange (ETDEWEB)

Chiles, Jeff; Malinowski, Marcin; Rao, Ashutosh [CREOL, The College of Optics and Photonics, University of Central Florida, Orlando, Florida 32816 (United States); Novak, Spencer; Richardson, Kathleen [CREOL, The College of Optics and Photonics, University of Central Florida, Orlando, Florida 32816 (United States); Department of Materials Science and Engineering, COMSET, Clemson University, Clemson, South Carolina 29634 (United States); Fathpour, Sasan, E-mail: fathpour@creol.ucf.edu [CREOL, The College of Optics and Photonics, University of Central Florida, Orlando, Florida 32816 (United States); Department of Electrical Engineering and Computer Science, University of Central Florida, Orlando, Florida 32816 (United States)

2015-03-16

A chlorine plasma etching-based method for the fabrication of high-performance chalcogenide-based integrated photonics on silicon substrates is presented. By optimizing the etching conditions, chlorine plasma is employed to produce extremely low-roughness etched sidewalls on waveguides with minimal penalty to propagation loss. Using this fabrication method, microring resonators with record-high intrinsic Q-factors as high as 450 000 and a corresponding propagation loss as low as 0.42 dB/cm are demonstrated in submicron chalcogenide waveguides. Furthermore, the developed chlorine plasma etching process is utilized to demonstrate fiber-to-waveguide grating couplers in chalcogenide photonics with high power coupling efficiency of 37% for transverse-electric polarized modes.

Low-loss, submicron chalcogenide integrated photonics with chlorine plasma etching

International Nuclear Information System (INIS)

Chiles, Jeff; Malinowski, Marcin; Rao, Ashutosh; Novak, Spencer; Richardson, Kathleen; Fathpour, Sasan

2015-01-01

A chlorine plasma etching-based method for the fabrication of high-performance chalcogenide-based integrated photonics on silicon substrates is presented. By optimizing the etching conditions, chlorine plasma is employed to produce extremely low-roughness etched sidewalls on waveguides with minimal penalty to propagation loss. Using this fabrication method, microring resonators with record-high intrinsic Q-factors as high as 450 000 and a corresponding propagation loss as low as 0.42 dB/cm are demonstrated in submicron chalcogenide waveguides. Furthermore, the developed chlorine plasma etching process is utilized to demonstrate fiber-to-waveguide grating couplers in chalcogenide photonics with high power coupling efficiency of 37% for transverse-electric polarized modes

On melting of boron phosphide under pressure

OpenAIRE

Solozhenko, Vladimir; Mukhanov, V. A.

2015-01-01

Melting of cubic boron phosphide, BP, has been studied at pressures to 9 GPa using synchrotron X-ray diffraction and electrical resistivity measurements. It has been found that above 2.6 GPa BP melts congruently, and the melting curve exhibits negative slope (–60 ± 7 K/GPa), which is indicative of a higher density of the melt as compared to the solid phase.

Aluminium phosphide poising: a case report

International Nuclear Information System (INIS)

Hirani, S.A.A.; Rahman, A.

2010-01-01

This paper reports the case of a family in which three children were presented at Emergency Room (ER) with poisoning after the use of a pesticide at home. Initially, the cases were managed as routine cases of organophosphorus poisoning; however, the death of two children made the health team members realise that the poison's effects were delayed and devastating. Later, the compound was identified as Aluminium Phosphide (ALP), and the life of the last surviving child in the family was saved. (author)

Chalcogenide Glass Optical Waveguides for Infrared Biosensing

Directory of Open Access Journals (Sweden)

Bruno Bureau

2009-09-01

Full Text Available Due to the remarkable properties of chalcogenide (Chg glasses, Chg optical waveguides should play a significant role in the development of optical biosensors. This paper describes the fabrication and properties of chalcogenide fibres and planar waveguides. Using optical fibre transparent in the mid-infrared spectral range we have developed a biosensor that can collect information on whole metabolism alterations, rapidly and in situ. Thanks to this sensor it is possible to collect infrared spectra by remote spectroscopy, by simple contact with the sample. In this way, we tried to determine spectral modifications due, on the one hand, to cerebral metabolism alterations caused by a transient focal ischemia in the rat brain and, in the other hand, starvation in the mouse liver. We also applied a microdialysis method, a well known technique for in vivo brain metabolism studies, as reference. In the field of integrated microsensors, reactive ion etching was used to pattern rib waveguides between 2 and 300 μm wide. This technique was used to fabricate Y optical junctions for optical interconnections on chalcogenide amorphous films, which can potentially increase the sensitivity and stability of an optical micro-sensor. The first tests were also carried out to functionalise the Chg planar waveguides with the aim of using them as (biosensors.

Orientation of Zn3P2 films via phosphidation of Zn precursors

Science.gov (United States)

Katsube, Ryoji; Nose, Yoshitaro

2017-02-01

Orientation of solar absorber is an important factor to achieve high efficiency of thin film solar cells. In the case of Zn3P2 which is a promising absorber of low-cost and high-efficiency solar cells, (110)/(001) orientation was only reported in previous studies. We have successfully prepared (101)-oriented Zn3P2 films by phosphidation of (0001)-oriented Zn films at 350 °C. The phosphidation mechanism of Zn is discussed through STEM observations on the partially-reacted sample and the consideration of the relationship between the crystal structures of Zn and Zn3P2 . We revealed that (0001)-oriented Zn led to nucleation of (101)-oriented Zn3P2 due to the similarity in atomic arrangement between Zn and Zn3P2 . The electrical resistivity of the (101)-oriented Zn3P2 film was lower than those of (110)/(001)-oriented films, which is an advantage of the phosphidation technique to the growth processes in previous works. The results in this study demonstrated that well-conductive Zn3P2 films could be obtained by controlling orientations of crystal grains, and provide a guiding principle for microstructure control in absorber materials.

Compton scattering studies of the electron momentum distribution in indium phosphide

CERN Document Server

Deb, A; Guin, R; Chatterjee, A K

1999-01-01

The electron momentum anisotropy of indium phosphide has been studied by measuring the directional Compton profiles of indium phosphide single crystals with the use of radiation from an sup 2 sup 4 sup 1 Am gamma source. Three different samples, cut along the [100], [110] and [111] planes, were used. The experimental anisotropy has been compared with the results based on the linear combination of Gaussian orbitals (LCGO) method. The agreement is very good with our theoretical results. It is found that the extrema appearing in the dependences on q of the anisotropies have an intimate connection with the bonding properties of the semiconductor. A self-consistent, all-electron, local density calculation for the partial density of states, total density of states and the charge analysis is also presented here.

Ingestion of gallium phosphide nanowires has no adverse effect on Drosophila tissue function

International Nuclear Information System (INIS)

Adolfsson, Karl; Hammarin, Greger; Prinz, Christelle N; Schneider, Martina; Häcker, Udo

2013-01-01

Engineered nanoparticles have been under increasing scrutiny in recent years. High aspect ratio nanoparticles such as carbon nanotubes and nanowires have raised safety concerns due to their geometrical similarity to asbestos fibers. III–V epitaxial semiconductor nanowires are expected to be utilized in devices such as LEDs and solar cells and will thus be available to the public. In addition, clean-room staff fabricating and characterizing the nanowires are at risk of exposure, emphasizing the importance of investigating their possible toxicity. Here we investigated the effects of gallium phosphide nanowires on the fruit fly Drosophila melanogaster. Drosophila larvae and/or adults were exposed to gallium phosphide nanowires by ingestion with food. The toxicity and tissue interaction of the nanowires was evaluated by investigating tissue distribution, activation of immune response, genome-wide gene expression, life span, fecundity and somatic mutation rates. Our results show that gallium phosphide nanowires applied through the diet are not taken up into Drosophila tissues, do not elicit a measurable immune response or changes in genome-wide gene expression and do not significantly affect life span or somatic mutation rate. (paper)

Synthesis of 2D Metal Chalcogenide Thin Films through the Process Involving Solution-Phase Deposition.

Science.gov (United States)

Giri, Anupam; Park, Gyeongbae; Yang, Heeseung; Pal, Monalisa; Kwak, Junghyeok; Jeong, Unyong

2018-04-24

2D metal chalcogenide thin films have recently attracted considerable attention owing to their unique physicochemical properties and great potential in a variety of applications. Synthesis of large-area 2D metal chalcogenide thin films in controllable ways remains a key challenge in this research field. Recently, the solution-based synthesis of 2D metal chalcogenide thin films has emerged as an alternative approach to vacuum-based synthesis because it is relatively simple and easy to scale up for high-throughput production. In addition, solution-based thin films open new opportunities that cannot be achieved from vacuum-based thin films. Here, a comprehensive summary regarding the basic structures and properties of different types of 2D metal chalcogenides, the mechanistic details of the chemical reactions in the synthesis of the metal chalcogenide thin films, recent successes in the synthesis by different reaction approaches, and the applications and potential uses is provided. In the last perspective section, the technical challenges to be overcome and the future research directions in the solution-based synthesis of 2D metal chalcogenides are discussed. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Breakthrough switching speed with an all-optical chalcogenide glass chip: 640 Gbit/s demultiplexing

DEFF Research Database (Denmark)

Galili, Michael; Xu, Jing; Mulvad, Hans Christian Hansen

2009-01-01

We report the first demonstration of error-free 640 Gbit/s demultiplexing using the Kerr non-linearity of an only 5 cm long chalcogenide glass waveguide chip. Our approach exploits four-wave mixing by the instantaneous nonlinear response of chalcogenide. Excellent performance is achieved with onl...... 2 dB average power penalty and no indication of error-floor. Characterisation of the FWM efficiency for the chalcogenide waveguide is given and confirms the good performance of the device....

Hydrothermal synthesis of layered iron-chalcogenide superconductors and related compounds

International Nuclear Information System (INIS)

Pachmayr, Ursula Elisabeth

2017-01-01

This thesis provides a new preparative approach to iron-chalcogenide based superconductors. The hydrothermal synthesis of anti-PbO type FeSe, which can be seen as basis structure of the compounds of interest was successfully developed. Along with this, some insights regarding the influence of synthesis parameters were gained featuring a basis for further hydrothermal syntheses of new iron-chalcogenide compounds. The potential of this method, primarily the extension of the so far limited accessibility of iron-chalcogenide based superconductors by solid-state sythesis, was revealed within the present work. The solid-solution FeSe_1_-_xS_x was prepared for the whole substitution range, whereas solid-state synthesis exhibits a solubility limit at x = 0.3. Furthermore, the new compounds [(Li_0_._8Fe_0_._2)OH]FeX (X = Se, S) were synthesized which are exclusively accessible via hydrothermal method. The compounds, where layers of (Li_0_._8Fe_0_._2)OH alternate with FeX layers, feature exceptional physical properties, notably a coexistence of superconductivity and ferromagnetism. They were intensively studied within this work. By combination of solid-state and hydrothermal ion-exchange synthesis even large crystals necessary for subsequent physical measurements are accessible. Apart from these layered iron-chalcogenide superconductors, further compounds which likewise exhibit building blocks of edge-sharing FeSe_4 tetrahedra were found via this synthesis method. The iron selenides A_2Fe_4Se_6 (A = K, Rb, Cs) consist of double chains of [Fe_2Se_3]"1"-, whereas a new compound Na_6(H_2O)_1_8Fe_4Se_8 exhibits [Fe_4Se_8]"6"- 'stella quadrangula' clusters. This structural diversity as well as the associated physical properties of the compounds demonstrates the numerous capabilities of hydrothermal synthesis in the field of iron-chalcogenide compounds. In particular with regard to iron-chalcogenide based superconductors this synthesis strategy is encouraging. It seems probable

Hydrothermal synthesis of layered iron-chalcogenide superconductors and related compounds

Energy Technology Data Exchange (ETDEWEB)

Pachmayr, Ursula Elisabeth

2017-04-06

This thesis provides a new preparative approach to iron-chalcogenide based superconductors. The hydrothermal synthesis of anti-PbO type FeSe, which can be seen as basis structure of the compounds of interest was successfully developed. Along with this, some insights regarding the influence of synthesis parameters were gained featuring a basis for further hydrothermal syntheses of new iron-chalcogenide compounds. The potential of this method, primarily the extension of the so far limited accessibility of iron-chalcogenide based superconductors by solid-state sythesis, was revealed within the present work. The solid-solution FeSe{sub 1-x}S{sub x} was prepared for the whole substitution range, whereas solid-state synthesis exhibits a solubility limit at x = 0.3. Furthermore, the new compounds [(Li{sub 0.8}Fe{sub 0.2})OH]FeX (X = Se, S) were synthesized which are exclusively accessible via hydrothermal method. The compounds, where layers of (Li{sub 0.8}Fe{sub 0.2})OH alternate with FeX layers, feature exceptional physical properties, notably a coexistence of superconductivity and ferromagnetism. They were intensively studied within this work. By combination of solid-state and hydrothermal ion-exchange synthesis even large crystals necessary for subsequent physical measurements are accessible. Apart from these layered iron-chalcogenide superconductors, further compounds which likewise exhibit building blocks of edge-sharing FeSe{sub 4} tetrahedra were found via this synthesis method. The iron selenides A{sub 2}Fe{sub 4}Se{sub 6} (A = K, Rb, Cs) consist of double chains of [Fe{sub 2}Se{sub 3}]{sup 1-}, whereas a new compound Na{sub 6}(H{sub 2}O){sub 18}Fe{sub 4}Se{sub 8} exhibits [Fe{sub 4}Se{sub 8}]{sup 6-} 'stella quadrangula' clusters. This structural diversity as well as the associated physical properties of the compounds demonstrates the numerous capabilities of hydrothermal synthesis in the field of iron-chalcogenide compounds. In particular with regard

Superconducting properties of iron chalcogenide thin films

Directory of Open Access Journals (Sweden)

Paolo Mele

2012-01-01

Full Text Available Iron chalcogenides, binary FeSe, FeTe and ternary FeTexSe1−x, FeTexS1−x and FeTe:Ox, are the simplest compounds amongst the recently discovered iron-based superconductors. Thin films of iron chalcogenides present many attractive features that are covered in this review, such as: (i easy fabrication and epitaxial growth on common single-crystal substrates; (ii strong enhancement of superconducting transition temperature with respect to the bulk parent compounds (in FeTe0.5Se0.5, zero-resistance transition temperature Tc0bulk = 13.5 K, but Tc0film = 19 K on LaAlO3 substrate; (iii high critical current density (Jc ~ 0.5 ×106 A cm2 at 4.2 K and 0 T for FeTe0.5Se0.5 film deposited on CaF2, and similar values on flexible metallic substrates (Hastelloy tapes buffered by ion-beam assisted deposition with a weak dependence on magnetic field; (iv high upper critical field (~50 T for FeTe0.5Se0.5, Bc2(0, with a low anisotropy, γ ~ 2. These highlights explain why thin films of iron chalcogenides have been widely studied in recent years and are considered as promising materials for applications requiring high magnetic fields (20–50 T and low temperatures (2–10 K.

Method to synthesize metal chalcogenide monolayer nanomaterials

Science.gov (United States)

Hernandez-Sanchez, Bernadette A.; Boyle, Timothy J.

2016-12-13

Metal chalcogenide monolayer nanomaterials can be synthesized from metal alkoxide precursors by solution precipitation or solvothermal processing. The synthesis routes are more scalable, less complex and easier to implement than other synthesis routes.

Chalcogenide glasses as optical and ion-conducting materials. Kogaku oyobi ion dendo zairyo toshite no chalcogenide glass

Energy Technology Data Exchange (ETDEWEB)

Toge, N.; Minami, T. (Univ. of Osaka Prefecture, Osaka (Japan))

1991-12-01

Nonoxide glasses whose main constituent are chalcogen elements like S, Se, or Te etc. show a lot of various properties, for instance, high infrared transmittancy and semi-conductivity which are already well known. Additionally, the optical properties change a lot along with the phase transition's happening between crystal and noncrystal under comparative low temperature. Further, it is also observed that the glasses containing proper cation appear high ion-conductivity. This paper supplies a brief reviews of chalcogenide glasses used as materials for infrared fiber, phase transition optical memory and superionic conductor, wherein the former two have already on the stage of utilization, particularly the realization of a rewritable optical memory is possible by using chalcogenide glasses film, and ion-conductor is in the phase to have shown the possibility of high conductivity while the development thereof is being expected. 22 refs., 8 figs.

Forced Ion Migration for Chalcogenide Phase Change Memory Device

Science.gov (United States)

Campbell, Kristy A (Inventor)

2013-01-01

Non-volatile memory devices with two stacked layers of chalcogenide materials comprising the active memory device have been investigated for their potential as phase-change memories. The devices tested included GeTe/SnTe, Ge2Se3/SnTe, and Ge2Se3/SnSe stacks. All devices exhibited resistance switching behavior. The polarity of the applied voltage with respect to the SnTe or SnSe layer was critical to the memory switching properties, due to the electric field induced movement of either Sn or Te into the Ge-chalcogenide layer. One embodiment of the invention is a device comprising a stack of chalcogenide-containing layers which exhibit phase-change switching only after a reverse polarity voltage potential is applied across the stack causing ion movement into an adjacent layer and thus "activating" the device to act as a phase-change random access memory device or a reconfigurable electronics device when the applied voltage potential is returned to the normal polarity. Another embodiment of the invention is a device that is capable of exhibiting more than two data states.

New Trends in Amplifiers and Sources via Chalcogenide Photonic Crystal Fibers

Directory of Open Access Journals (Sweden)

L. Mescia

2012-01-01

Full Text Available Rare-earth-doped chalcogenide glass fiber lasers and amplifiers have great applicative potential in many fields since they are key elements in the near and medium-infrared (mid-IR wavelength range. In this paper, a review, even if not exhaustive, on amplification and lasing obtained by employing rare-earth-doped chalcogenide photonic crystal fibers is reported. Materials, devices, and feasible applications in the mid-IR are briefly mentioned.

An update on toxicology of aluminum phosphide

Directory of Open Access Journals (Sweden)

Moghadamnia Ali

2012-09-01

Full Text Available Abstract Aluminum phosphide (AlP is a cheap solid fumigant and a highly toxic pesticide which is commonly used for grain preservation. In Iran it is known as the “rice tablet”. AlP has currently aroused interest with increasing number of cases in the past four decades due to increased use in agricultural and non-agricultural purposesand also its easy availability in the markets has increased its misuse to commit suicide. Upon contact with moisture in the environment, AlP undergoes a chemical reaction yielding phosphine gas, which is the active pesticidal component. Phosphine inhibits cellular oxygen utilization and can induce lipid peroxidation. It was reported that AlP has a mortality rate more than 50% of intoxication cases. Poisoning with AlP has usually occurred in attempts to suicide. It is a more common case in adults rather than teen agers. In some eastern countries it is a very common agent with rapid action for suicide. Up to date, there is no effective antidote or treatment for its intoxication. Also, some experimental results suggest that magnesium sulfate, N-acetyl cysteine (NAC, glutathione, vitamin C and E, beta-carotenes, coconut oil and melatonin may play an important role in reducing the oxidative outcomes of phosphine. This article reviews the experimental and clinical features of AlP intoxication and tries to suggest a way to encounter its poisoning.

An Update on Toxicology of Aluminum Phosphide

Directory of Open Access Journals (Sweden)

Ali Akbar Moghhadamnia

2012-09-01

Full Text Available Aluminum phosphide (AlP is a cheap solid fumigant and a highly toxic pesticide which is commonly used for grain preservation. In Iran it is known as the "rice tablet". AlP has currently aroused interest with increasing number of cases in the past four decades due to increased use in agricultural and non-agricultural purposes and also its easy availability in the markets has increased its misuse to commit suicide. Upon contact with moisture in the environment, AlP undergoes a chemical reaction yielding phosphine gas, which is the active pesticidal component. Phosphine inhibits cellular oxygen utilization and can induce lipid peroxidation. It was reported that AlP has a mortality rate more than 50% of intoxication cases. Poisoning with AlP has usually occurred in attempts to suicide. It is a more common case in adults rather than teen agers. In some eastern countries it is a very common agent with rapid action for suicide. Up to date, there is no effective antidote or treatment for its intoxication. Also, some experimental results suggest that magnesium sulfate, N-acetyl cysteine (NAC, glutathione, vitamin C and E, beta-carotenes, coconut oil and melatonin may play an important role in reducing the oxidative outcomes of phosphine. This article reviews the experimental and clinical features of AlP intoxication and tries to suggest a way to encounter its poisoning.

Chalcogenide oxygen reduction reaction catalysis: X-ray photoelectron spectroscopy with Ru, Ru/Se and Ru/S samples emersed from aqueous media

Energy Technology Data Exchange (ETDEWEB)

Lewera, A. [Department of Chemistry, University of Illinois at Urbana-Champaign, Urbana, IL 61801 (United States); Department of Chemistry, Warsaw University, Pasteura 1, 02-093 Warsaw (Poland); Inukai, J. [Clean Energy Research Center, University of Yamanashi, 7-32 Miyamae-cho, Kofu 400-0006 (Japan); Zhou, W.P. [Department of Chemistry, University of Illinois at Urbana-Champaign, Urbana, IL 61801 (United States); Cao, D. [Department of Chemistry, University of Illinois at Urbana-Champaign, Urbana, IL 61801 (United States); College of Material Science and Chemical Engineering, Harbin Engineering University, Harbin 150001 (China); Duong, H.T. [Department of Chemistry, University of Illinois at Urbana-Champaign, Urbana, IL 61801 (United States); Alonso-Vante, N. [Laboratory of Electrocatalysis, UMR-CNRS 6503, University of Poitiers, F-86022 Poitiers (France)]. E-mail: Nicolas.Alonso.Vante@univ-poitiers.fr; Wieckowski, A. [Department of Chemistry, University of Illinois at Urbana-Champaign, Urbana, IL 61801 (United States)]. E-mail: andrzej@scs.uiuc.edu

2007-05-10

Oxygen reduction Ru/Se and Ru/S fuel cell surface chalcogenide catalysts were prepared via chemical reaction of reduced Ru nanoparticles with selenium and sulfur in xylenes [D. Cao, A. Wieckowski, J. Inukai, N. Alonso-Vante, J. Electrochem. Soc. 153 (2006) A869]. The chalcogenide samples - as well as the starting chalcogens-free Ru nanoparticle material - were immobilized on a gold disk for X-ray Photoelectron Spectroscopy (XPS) characterization. While we found oxygen in most of the samples, predominantly from Ru oxides, we conclude that the oxygen on Ru/S may be located in subsurface sites: the subsurface oxygen. We also found that the transformation of the oxidized Ru black to metallic Ru required intensive electrochemical treatment, including hydrogen evolution. In contrast, five cyclic voltammetric scans in the potential range from 0.00 and 0.75 V versus RHE were sufficient to remove the oxygen forms from Ru/Se and, to a large extent, from Ru/S. We therefore conclude that Ru metal is protected against oxidation to Ru oxides by the chalcogens additives. The voltammetric treatment in the 0.00 and 0.75 V range also removed the SeO{sub 2} or SO {sub x} forms leaving anionic/elemental Se or S on the surface. Upon larger amplitude voltammetric cycling, from 0.00 to 1.20 V versus RHE, both Se and S were dissolved and the dissolution process was coincidental with the oxygen growth in/on the Ru samples.

Chalcogenide oxygen reduction reaction catalysis: X-ray photoelectron spectroscopy with Ru, Ru/Se and Ru/S samples emersed from aqueous media

International Nuclear Information System (INIS)

Lewera, A.; Inukai, J.; Zhou, W.P.; Cao, D.; Duong, H.T.; Alonso-Vante, N.; Wieckowski, A.

2007-01-01

Oxygen reduction Ru/Se and Ru/S fuel cell surface chalcogenide catalysts were prepared via chemical reaction of reduced Ru nanoparticles with selenium and sulfur in xylenes [D. Cao, A. Wieckowski, J. Inukai, N. Alonso-Vante, J. Electrochem. Soc. 153 (2006) A869]. The chalcogenide samples - as well as the starting chalcogens-free Ru nanoparticle material - were immobilized on a gold disk for X-ray Photoelectron Spectroscopy (XPS) characterization. While we found oxygen in most of the samples, predominantly from Ru oxides, we conclude that the oxygen on Ru/S may be located in subsurface sites: the subsurface oxygen. We also found that the transformation of the oxidized Ru black to metallic Ru required intensive electrochemical treatment, including hydrogen evolution. In contrast, five cyclic voltammetric scans in the potential range from 0.00 and 0.75 V versus RHE were sufficient to remove the oxygen forms from Ru/Se and, to a large extent, from Ru/S. We therefore conclude that Ru metal is protected against oxidation to Ru oxides by the chalcogens additives. The voltammetric treatment in the 0.00 and 0.75 V range also removed the SeO 2 or SO x forms leaving anionic/elemental Se or S on the surface. Upon larger amplitude voltammetric cycling, from 0.00 to 1.20 V versus RHE, both Se and S were dissolved and the dissolution process was coincidental with the oxygen growth in/on the Ru samples

Low temperature synthesis of ternary metal phosphides using plasma for asymmetric supercapacitors

KAUST Repository

Liang, Hanfeng; Xia, Chuan; Jiang, Qiu; Gandi, Appala; Schwingenschlö gl, Udo; Alshareef, Husam N.

2017-01-01

We report a versatile route for the preparation of metal phosphides using PH plasma for supercapacitor applications. The high reactivity of plasma allows rapid and low temperature conversion of hydroxides into monometallic, bimetallic, or even more

Phosphidation of Li4Ti5O12 nanoparticles and their electrochemical and biocompatible superiority for lithium rechargeable batteries.

Science.gov (United States)

Jo, Mi Ru; Nam, Ki Min; Lee, Youngmin; Song, Kyeongse; Park, Joon T; Kang, Yong-Mook

2011-11-07

Phosphidated-Li(4)Ti(5)O(12) shows high capacity with a significantly enhanced kinetics opening new possibilities for ultra-fast charge/discharge of lithium rechargeable batteries. The in vitro cytotoxicity test proves its fabulous cell viability, indicating that the toxicity problem of nanoparticles can be also solved by phosphidation. This journal is © The Royal Society of Chemistry 2011

Interfacial scanning tunneling spectroscopy (STS) of chalcogenide/metal hybrid nanostructure

Energy Technology Data Exchange (ETDEWEB)

Saad, Mahmoud M.; Abdallah, Tamer [Physics Department, Faculty of Science, Ain Shams University, Abbassia, Cairo (Egypt); Easawi, Khalid; Negm, Sohair [Department of Physics and Mathematics, Faculty of Engineering (Shoubra), Benha University (Egypt); Talaat, Hassan, E-mail: hassantalaat@hotmail.com [Physics Department, Faculty of Science, Ain Shams University, Abbassia, Cairo (Egypt)

2015-05-15

Graphical abstract: - Highlights: • Comparing band gaps values obtained optically with STS. • Comparing direct imaging with calculated dimensions. • STS determination of the interfacial band bending of metal/chalcogenide. - Abstract: The electronic structure at the interface of chalcogenide/metal hybrid nanostructure (CdSe–Au tipped) had been studied by UHV scanning tunneling spectroscopy (STS) technique at room temperature. This nanostructure was synthesized by a phase transfer chemical method. The optical absorption of this hybrid nanostructure was recorded, and the application of the effective mass approximation (EMA) model gave dimensions that were confirmed by the direct measurements using the scanning tunneling microscopy (STM) as well as the high-resolution transmission electron microscope (HRTEM). The energy band gap obtained by STS agrees with the values obtained from the optical absorption. Moreover, the STS at the interface of CdSe–Au tipped hybrid nanostructure between CdSe of size about 4.1 ± 0.19 nm and Au tip of size about 3.5 ± 0.29 nm shows a band bending about 0.18 ± 0.03 eV in CdSe down in the direction of the interface. Such a result gives a direct observation of the electron accumulation at the interface of CdSe–Au tipped hybrid nanostructure, consistent with its energy band diagram. The presence of the electron accumulation at the interface of chalcogenides with metals has an important implication for hybrid nanoelectronic devices and the newly developed plasmon/chalcogenide photovoltaic solar energy conversion.

Gallium Phosphide Integrated with Silicon Heterojunction Solar Cells

Science.gov (United States)

Zhang, Chaomin

It has been a long-standing goal to epitaxially integrate III-V alloys with Si substrates which can enable low-cost microelectronic and optoelectronic systems. Among the III-V alloys, gallium phosphide (GaP) is a strong candidate, especially for solar cells applications. Gallium phosphide with small lattice mismatch ( 0.4%) to Si enables coherent/pseudomorphic epitaxial growth with little crystalline defect creation. The band offset between Si and GaP suggests that GaP can function as an electron-selective contact, and it has been theoretically shown that GaP/Si integrated solar cells have the potential to overcome the limitations of common a-Si based heterojunction (SHJ) solar cells. Despite the promising potential of GaP/Si heterojunction solar cells, there are two main obstacles to realize high performance photovoltaic devices from this structure. First, the growth of the polar material (GaP) on the non-polar material (Si) is a challenge in how to suppress the formation of structural defects, such as anti-phase domains (APD). Further, it is widely observed that the minority-carrier lifetime of the Si substrates is significantly decreased during epitaxially growth of GaP on Si. In this dissertation, two different GaP growth methods were compared and analyzed, including migration-enhanced epitaxy (MEE) and traditional molecular beam epitaxy (MBE). High quality GaP can be realized on precisely oriented (001) Si substrates by MBE growth, and the investigation of structural defect creation in the GaP/Si epitaxial structures was conducted using high resolution X-ray diffraction (HRXRD) and high resolution transmission electron microscopy (HRTEM). The mechanisms responsible for lifetime degradation were further investigated, and it was found that external fast diffusors are the origin for the degradation. Two practical approaches including the use of both a SiNx diffusion barrier layer and P-diffused layers, to suppress the Si minority-carrier lifetime degradation

Debye temperatures of uranium chalcogenides from their lattice ...

Indian Academy of Sciences (India)

Unknown

From the phonon frequencies, their Debye temperatures are evaluated. Further, ... Keywords. Uranium chalcogenides; p-wave electronic superconductor; phonon frequency; Debye tempera- ture; spin ... to the ionic crystals of similar structure.

Synthesis of cadmium chalcogenide nanotubes at room temperature

KAUST Repository

Pan, Jun; Qian, Yitai

2012-01-01

Cadmium chalcogenide (CdE, E=S, Se, Te) polycrystalline nanotubes have been synthesized from precursor of CdS/cadmium thiolate complex at room temperature. The precursor was hydrothermally synthesized at 180 °C using thioglycolic acid (TGA) and cadmium acetate as starting materials. The transformation from the rod-like precursor of CdS/cadmium thiolate complex to CdS, CdSe and CdTe nanotubes were performed under constant stirring at room temperature in aqueous solution containing S 2-, Se 2- and Te 2-, respectively. The nanotube diameter can be controlled from 150 to 400 nm related to the dimension of templates. The XRD patterns show the cadmium chalcogenide nanotubes all corresponding to face-centered cubic structure. © 2012 Elsevier B.V. All rights reserved.

Synthesis of cadmium chalcogenide nanotubes at room temperature

KAUST Repository

Pan, Jun

2012-10-01

Cadmium chalcogenide (CdE, E=S, Se, Te) polycrystalline nanotubes have been synthesized from precursor of CdS/cadmium thiolate complex at room temperature. The precursor was hydrothermally synthesized at 180 °C using thioglycolic acid (TGA) and cadmium acetate as starting materials. The transformation from the rod-like precursor of CdS/cadmium thiolate complex to CdS, CdSe and CdTe nanotubes were performed under constant stirring at room temperature in aqueous solution containing S 2-, Se 2- and Te 2-, respectively. The nanotube diameter can be controlled from 150 to 400 nm related to the dimension of templates. The XRD patterns show the cadmium chalcogenide nanotubes all corresponding to face-centered cubic structure. © 2012 Elsevier B.V. All rights reserved.

Modulation-instability biosensing using an As2S3 chalcogenide tapered fiber

DEFF Research Database (Denmark)

Markos, Christos; Bang, Ole

2016-01-01

We demonstrate an experimentally feasible biosensor design based on As2S3 chalcogenide tapered fiber. Pumping the fiber close to 1064 nm, a record sensitivity up to ~18 nm/nm was predicted.......We demonstrate an experimentally feasible biosensor design based on As2S3 chalcogenide tapered fiber. Pumping the fiber close to 1064 nm, a record sensitivity up to ~18 nm/nm was predicted....

Transition Metal Phosphide Nanoparticles Supported on SBA-15 as Highly Selective Hydrodeoxygenation Catalysts for the Production of Advanced Biofuels.

Science.gov (United States)

Yang, Yongxing; Ochoa-Hernández, Cristina; de la Peña O'Shea, Víctor A; Pizarro, Patricia; Coronado, Juan M; Serrano, David P

2015-09-01

A series of catalysts constituted by nanoparticles of transition metal (M = Fe, Co, Ni and Mo) phosphides (TMP) dispersed on SBA-15 were synthesized by reduction of the corresponding metal phosphate precursors previously impregnated on the mesostructured support. All the samples contained a metal-loading of 20 wt% and with an initial M/P mole ratio of 1, and they were characterized by X-ray diffraction (XRD), N2 sorption, H2-TPR and transmission electron microscopy (TEM). Metal phosphide nanocatalysts were tested in a high pressure continuous flow reactor for the hydrodeoxygenation (HDO) of a methyl ester blend containing methyl oleate (C17H33-COO-CH3) as main component (70%). This mixture constitutes a convenient surrogate of triglycerides present in vegetable oils, and following catalytic hydrotreating yields mainly n-alkanes. The results of the catalytic assays indicate that Ni2P/SBA-15 catalyst presents the highest ester conversion, whereas the transformation rate is about 20% lower for MoP/SBA-15. In contrast, catalysts based on Fe and Co phosphides show a rather limited activity. Hydrocarbon distribution in the liquid product suggests that both hydrodeoxygenation and decarboxylation/decarbonylation reactions occur simultaneously over the different catalysts, although MoP/SBA-15 possess a selectivity towards hydrodeoxygenation exceeding 90%. Accordingly, the catalyst based on MoP affords the highest yield of n-octadecane, which is the preferred product in terms of carbon atom economy. Subsequently, in order to conjugate the advantages of both Ni and Mo phosphides, a series of catalysts containing variable proportions of both metals were prepared. The obtained results reveal that the mixed phosphides catalysts present a catalytic behavior intermediate between those of the monometallic phosphides. Accordingly, only marginal enhancement of the yield of n-octadecane is obtained for the catalysts with a Mo/Ni ratio of 3. Nevertheless, owing to this high selectivity

Multimode supercontinuum generation in chalcogenide glass fibres

DEFF Research Database (Denmark)

Kubat, Irnis; Bang, Ole

2016-01-01

Mid-infrared supercontinuum generation is considered in chalcogenide fibres when taking into account both polarisations and the necessary higher order modes. In particular we focus on high pulse energy supercontinuum generation with long pump pulses. The modeling indicates that when only a single...

Effect of aluminium phosphide on some metabolites of the liver and ...

African Journals Online (AJOL)

Aluminium phosphide induced changes in some metabolic parameters in Parophiocephalus obscurus were assessed. Parophiocephalus obscurus (mean length, 18.00±0.09cm and mean weight, 65.03±0.03g) were acclimatized to laboratory condition for 10 days and then exposed to varying sublethal concentrations of ...

ZnO and copper indium chalcogenide heterojunctions prepared by inexpensive methods

International Nuclear Information System (INIS)

Berruet, M.; Di Iorio, Y.; Troviano, M.; Vázquez, M.

2014-01-01

Solution-based techniques were used to prepare ZnO/CuIn(Se, S) 2 heterojunctions that serve as solar cell prototypes. A duplex layer of ZnO (compact + porous) was electrodeposited. Chalcogenide thin films were deposited using successive ionic layer adsorption and reaction method (SILAR). By subsequent thermal treatments in two different atmospheres, CuInSe 2 (CISe) and CuInSe 2−x S x (CISeS) were obtained. The composition and morphology of the annealed films were characterized by GXRD, micro-Raman spectroscopy and SEM. Devices prepared with CISe and CISeS show a clear photo-response. The introduction of a buffer layer of TiO 2 into the ZnO/chalcogenide interface was necessary to detect photocurrent. The presence of CISeS improves the response of the cell, with higher values of short circuit current density, open circuit potential and fill factor. These promising results show that it is possible to prepare photovoltaic heterojunctions by depositing chalcogenides onto porous ZnO substrates using low-cost solution-based techniques. - Highlights: • Heterojunctions that serve as solar cell prototypes were prepared using solution-based techniques. • The devices comprised a double layer of ZnO and CuInSe 2 or CuInSe 0.4 S 1.6 . • A TiO 2 buffer layer in the ZnO/chalcogenide interface is necessary to detect photocurrent. • The incorporation of S improved the response of the photovoltaic heterojunction

Infrared emitting and photoconducting colloidal silver chalcogenide nanocrystal quantum dots from a silylamide-promoted synthesis.

Science.gov (United States)

Yarema, Maksym; Pichler, Stefan; Sytnyk, Mykhailo; Seyrkammer, Robert; Lechner, Rainer T; Fritz-Popovski, Gerhard; Jarzab, Dorota; Szendrei, Krisztina; Resel, Roland; Korovyanko, Oleksandra; Loi, Maria Antonietta; Paris, Oskar; Hesser, Günter; Heiss, Wolfgang

2011-05-24

Here, we present a hot injection synthesis of colloidal Ag chalcogenide nanocrystals (Ag(2)Se, Ag(2)Te, and Ag(2)S) that resulted in exceptionally small nanocrystal sizes in the range between 2 and 4 nm. Ag chalcogenide nanocrystals exhibit band gap energies within the near-infrared spectral region, making these materials promising as environmentally benign alternatives to established infrared active nanocrystals containing toxic metals such as Hg, Cd, and Pb. We present Ag(2)Se nanocrystals in detail, giving size-tunable luminescence with quantum yields above 1.7%. The luminescence, with a decay time on the order of 130 ns, was shown to improve due to the growth of a monolayer thick ZnSe shell. Photoconductivity with a quantum efficiency of 27% was achieved by blending the Ag(2)Se nanocrystals with a soluble fullerene derivative. The co-injection of lithium silylamide was found to be crucial to the synthesis of Ag chalcogenide nanocrystals, which drastically increased their nucleation rate even at relatively low growth temperatures. Because the same observation was made for the nucleation of Cd chalcogenide nanocrystals, we conclude that the addition of lithium silylamide might generally promote wet-chemical synthesis of metal chalcogenide nanocrystals, including in as-yet unexplored materials.

Fabrication and characterization of on-chip optical nonlinear chalcogenide nanofiber devices.

Science.gov (United States)

Zhang, Qiming; Li, Ming; Hao, Qiang; Deng, Dinghuan; Zhou, Hui; Zeng, Heping; Zhan, Li; Wu, Xiang; Liu, Liying; Xu, Lei

2010-11-15

Chalcogenide (As(2)S(3)) nanofibers as narrow as 200 nm in diameter are drawn by the fiber pulling method, are successfully embedded in SU8 polymer, and form on-chip waveguides and high-Q microknot resonators (Q = 3.9 × 10(4)) with smooth cleaved end faces. Resonance tuning of resonators is realized by localized laser irradiation. Strong supercontinuum generation with a bandwidth of 500 nm is achieved in a 7-cm-long on-chip chalcogenide waveguide. Our result provides a method for the development of compact, high-optical-quality, and robust photonic devices.

Ensembles of indium phosphide nanowires: physical properties and functional devices integrated on non-single crystal platforms

International Nuclear Information System (INIS)

Kobayashi, Nobuhiko P.; Lohn, Andrew; Onishi, Takehiro; Mathai, Sagi; Li, Xuema; Straznicky, Joseph; Wang, Shih-Yuan; Williams, R.S.; Logeeswaran, V.J.; Islam, M.S.

2009-01-01

A new route to grow an ensemble of indium phosphide single-crystal semiconductor nanowires is described. Unlike conventional epitaxial growth of single-crystal semiconductor films, the proposed route for growing semiconductor nanowires does not require a single-crystal semiconductor substrate. In the proposed route, instead of using single-crystal semiconductor substrates that are characterized by their long-range atomic ordering, a template layer that possesses short-range atomic ordering prepared on a non-single-crystal substrate is employed. On the template layer, epitaxial information associated with its short-range atomic ordering is available within an area that is comparable to that of a nanowire root. Thus the template layer locally provides epitaxial information required for the growth of semiconductor nanowires. In the particular demonstration described in this paper, hydrogenated silicon was used as a template layer for epitaxial growth of indium phosphide nanowires. The indium phosphide nanowires grown on the hydrogenerated silicon template layer were found to be single crystal and optically active. Simple photoconductors and pin-diodes were fabricated and tested with the view towards various optoelectronic device applications where group III-V compound semiconductors are functionally integrated onto non-single-crystal platforms. (orig.)

Ensembles of indium phosphide nanowires: physical properties and functional devices integrated on non-single crystal platforms

Energy Technology Data Exchange (ETDEWEB)

Kobayashi, Nobuhiko P.; Lohn, Andrew; Onishi, Takehiro [University of California, Santa Cruz (United States). Baskin School of Engineering; NASA Ames Research Center, Nanostructured Energy Conversion Technology and Research (NECTAR), Advanced Studies Laboratories, Univ. of California Santa Cruz, Moffett Field, CA (United States); Mathai, Sagi; Li, Xuema; Straznicky, Joseph; Wang, Shih-Yuan; Williams, R.S. [Hewlett-Packard Laboratories, Information and Quantum Systems Laboratory, Palo Alto, CA (United States); Logeeswaran, V.J.; Islam, M.S. [University of California Davis, Electrical and Computer Engineering, Davis, CA (United States)

2009-06-15

A new route to grow an ensemble of indium phosphide single-crystal semiconductor nanowires is described. Unlike conventional epitaxial growth of single-crystal semiconductor films, the proposed route for growing semiconductor nanowires does not require a single-crystal semiconductor substrate. In the proposed route, instead of using single-crystal semiconductor substrates that are characterized by their long-range atomic ordering, a template layer that possesses short-range atomic ordering prepared on a non-single-crystal substrate is employed. On the template layer, epitaxial information associated with its short-range atomic ordering is available within an area that is comparable to that of a nanowire root. Thus the template layer locally provides epitaxial information required for the growth of semiconductor nanowires. In the particular demonstration described in this paper, hydrogenated silicon was used as a template layer for epitaxial growth of indium phosphide nanowires. The indium phosphide nanowires grown on the hydrogenerated silicon template layer were found to be single crystal and optically active. Simple photoconductors and pin-diodes were fabricated and tested with the view towards various optoelectronic device applications where group III-V compound semiconductors are functionally integrated onto non-single-crystal platforms. (orig.)

General Top-Down Ion Exchange Process for the Growth of Epitaxial Chalcogenide Thin Films and Devices

KAUST Repository

Xia, Chuan; Li, Peng; Li, Jun; Jiang, Qiu; Zhang, Xixiang; Alshareef, Husam N.

2016-01-01

) epitaxial chalcogenide metallic and semiconducting films and (2) free-standing chalcogenide films and (3) completed in situ formation of atomically sharp heterojunctions by selective ion exchange. Epitaxial NiCo2S4 thin films prepared by our process show 115

Effect of dislocations on the open-circuit voltage, short-circuit current and efficiency of heteroepitaxial indium phosphide solar cells

Science.gov (United States)

Jain, Raj K.; Flood, Dennis J.

1990-01-01

Excellent radiation resistance of indium phosphide solar cells makes them a promising candidate for space power applications, but the present high cost of starting substrates may inhibit their large scale use. Thin film indium phosphide cells grown on Si or GaAs substrates have exhibited low efficiencies, because of the generation and propagation of large number of dislocations. Dislocation densities were calculated and its influence on the open circuit voltage, short circuit current, and efficiency of heteroepitaxial indium phosphide cells was studied using the PC-1D. Dislocations act as predominant recombination centers and are required to be controlled by proper transition layers and improved growth techniques. It is shown that heteroepitaxial grown cells could achieve efficiencies in excess of 18 percent AMO by controlling the number of dislocations. The effect of emitter thickness and surface recombination velocity on the cell performance parameters vs. dislocation density is also studied.

Engineering absorption and blackbody radiation in the far-infrared with surface phonon polaritons on gallium phosphide

Energy Technology Data Exchange (ETDEWEB)

Streyer, W.; Law, S.; Rosenberg, A.; Wasserman, D. [Department of Electrical and Computer Engineering, University of Illinois Urbana Champaign, Urbana, Illinois 61801 (United States); Roberts, C.; Podolskiy, V. A. [Department of Physics and Applied Physics, University of Massachusetts Lowell, Lowell, Massachusetts 01854 (United States); Hoffman, A. J. [Department of Electrical Engineering, University of Notre Dame, South Bend, Indiana 46556 (United States)

2014-03-31

We demonstrate excitation of surface phonon polaritons on patterned gallium phosphide surfaces. Control over the light-polariton coupling frequencies is demonstrated by changing the pattern periodicity and used to experimentally determine the gallium phosphide surface phonon polariton dispersion curve. Selective emission via out-coupling of thermally excited surface phonon polaritons is experimentally demonstrated. Samples are characterized experimentally by Fourier transform infrared reflection and emission spectroscopy, and modeled using finite element techniques and rigorous coupled wave analysis. The use of phonon resonances for control of emissivity and excitation of bound surface waves offers a potential tool for the exploration of long-wavelength Reststrahlen band frequencies.

Limiting of photo induced changes in amorphous chalcogenide/alumino-silicate nanomultilayers

International Nuclear Information System (INIS)

Charnovych, S.; Nemec, P.; Nazabal, V.; Csik, A.; Allix, M.; Matzen, G.; Kokenyesi, S.

2011-01-01

Highlights: → Amorphous chalcogenides were investigated in this work. → Photo-induced effects were investigated in the created thin films. → Limiting of photo induced changes in amorphous chalcogenide/alumino-silicate nanomultilayers have been studied. - Abstract: Photo induced changes in amorphous As 20 Se 80 /alumino-silicate nanomultilayers (NML) produced by pulsed laser deposition (PLD) method have been studied in this work. The aim was to investigate the photo induced optical and surface relief changes due to the band gap illumination under the size- and hard cover limited conditions. It was observed that the hard cover layer on the surface of the uniform film or alumino-silicate sub-layers in the NML structure influences the photo darkening and restricts surface relief formations in As 20 Se 80 film or in the related NML compared with this effect in a pure chalcogenide layer. The influence of hard layers is supposed to be connected with limiting the free volume formation at the initial stage of the transformation process, which in turn limits the atomic movement and so the surface relief formation.

Infrared Emitting and Photoconducting Colloidal Silver Chalcogenide Nanocrystal Quantum Dots from a Silylamide-Promoted Synthesis

NARCIS (Netherlands)

Yarema, Maksym; Pichler, Stefan; Sytnyk, Mykhailo; Seyrkammer, Robert; Lechner, Rainer T.; Fritz-Popovski, Gerhard; Jarzab, Dorota; Szendrei, Krisztina; Resel, Roland; Korovyanko, Oleksandra; Loi, Maria Antonietta; Paris, Oskar; Hesser, Guenter; Heiss, Wolfgang; Hesser, Günter

Here, we present a hot injection synthesis of colloidal Ag chalcogenide nanocrystals (Ag(2)Se, Ag(2)Te, and Ag(2)S) that resulted in exceptionally small nanocrystal sizes in the range between 2 and 4 nm. Ag chalcogenide nanocrystals exhibit band gap energies within the near-infrared spectral region,

ZnO and copper indium chalcogenide heterojunctions prepared by inexpensive methods

Energy Technology Data Exchange (ETDEWEB)

Berruet, M., E-mail: berruetm@gmail.com [División Electroquímica y Corrosión, Facultad de Ingeniería, INTEMA, CONICET, Universidad Nacional de Mar del Plata, Juan B. Justo 4302, B7608FDQ Mar del Plata (Argentina); Di Iorio, Y. [División Electroquímica y Corrosión, Facultad de Ingeniería, INTEMA, CONICET, Universidad Nacional de Mar del Plata, Juan B. Justo 4302, B7608FDQ Mar del Plata (Argentina); Troviano, M. [Instituto de Investigación y Desarrollo en Ingeniería de Procesos, Biotecnología y Energías Alternativas (PROBIEN, CONICET-UNCo), Buenos Aires 1400, Q8300IBX Neuquén (Argentina); Vázquez, M. [División Electroquímica y Corrosión, Facultad de Ingeniería, INTEMA, CONICET, Universidad Nacional de Mar del Plata, Juan B. Justo 4302, B7608FDQ Mar del Plata (Argentina)

2014-12-15

Solution-based techniques were used to prepare ZnO/CuIn(Se, S){sub 2} heterojunctions that serve as solar cell prototypes. A duplex layer of ZnO (compact + porous) was electrodeposited. Chalcogenide thin films were deposited using successive ionic layer adsorption and reaction method (SILAR). By subsequent thermal treatments in two different atmospheres, CuInSe{sub 2} (CISe) and CuInSe{sub 2−x}S{sub x} (CISeS) were obtained. The composition and morphology of the annealed films were characterized by GXRD, micro-Raman spectroscopy and SEM. Devices prepared with CISe and CISeS show a clear photo-response. The introduction of a buffer layer of TiO{sub 2} into the ZnO/chalcogenide interface was necessary to detect photocurrent. The presence of CISeS improves the response of the cell, with higher values of short circuit current density, open circuit potential and fill factor. These promising results show that it is possible to prepare photovoltaic heterojunctions by depositing chalcogenides onto porous ZnO substrates using low-cost solution-based techniques. - Highlights: • Heterojunctions that serve as solar cell prototypes were prepared using solution-based techniques. • The devices comprised a double layer of ZnO and CuInSe{sub 2} or CuInSe{sub 0.4}S{sub 1.6}. • A TiO{sub 2} buffer layer in the ZnO/chalcogenide interface is necessary to detect photocurrent. • The incorporation of S improved the response of the photovoltaic heterojunction.

Surfactant free metal chalcogenides microparticles consisting of ...

Indian Academy of Sciences (India)

SANYASINAIDU GOTTAPU

2017-11-11

Nov 11, 2017 ... Metal chalcogenides; copper sulphide; copper selenide; micro flowers. 1. Introduction .... adding calculated quantity (2.7 mmol) of each acid separately. .... salts (LiCl, LiNO3, and LiOAc), and then hydride ions from (BH. − ... Concentration of metal .... hait A and Lim J Y 2016 Cation exchange synthesis of.

Thermal oxidation of InP in the presence of nitrates and sulfates of the 4-th group

International Nuclear Information System (INIS)

Mittova, I.Ya.; Shchukarev, A.V.; Soshnikov, V.V.; Kashkarov, V.M.

1999-01-01

Kinetics and thermal oxidation of indium phosphide were investigated in gas phase of 4 group metal (lead and zirconium) salts. These compound promotors were determined to accelerate oxidation. The mechanism of the effect of promoter cation and anion constituents on formation of the resultant heterostructure were discussed [ru

Inverse opal photonic crystal of chalcogenide glass by solution processing.

Science.gov (United States)

Kohoutek, Tomas; Orava, Jiri; Sawada, Tsutomu; Fudouzi, Hiroshi

2011-01-15

Chalcogenide opal and inverse opal photonic crystals were successfully fabricated by low-cost and low-temperature solution-based process, which is well developed in polymer films processing. Highly ordered silica colloidal crystal films were successfully infilled with nano-colloidal solution of the high refractive index As(30)S(70) chalcogenide glass by using spin-coating method. The silica/As-S opal film was etched in HF acid to dissolve the silica opal template and fabricate the inverse opal As-S photonic crystal. Both, the infilled silica/As-S opal film (Δn ~ 0.84 near λ=770 nm) and the inverse opal As-S photonic structure (Δn ~ 1.26 near λ=660 nm) had significantly enhanced reflectivity values and wider photonic bandgaps in comparison with the silica opal film template (Δn ~ 0.434 near λ=600 nm). The key aspects of opal film preparation by spin-coating of nano-colloidal chalcogenide glass solution are discussed. The solution fabricated "inorganic polymer" opal and the inverse opal structures exceed photonic properties of silica or any organic polymer opal film. The fabricated photonic structures are proposed for designing novel flexible colloidal crystal laser devices, photonic waveguides and chemical sensors. Copyright © 2010 Elsevier Inc. All rights reserved.

Ion beam assisted synthesis of nano-crystals in glasses (silver and lead chalcogenides)

International Nuclear Information System (INIS)

Espiau de Lamaestre, R.

2005-04-01

This work deals with the interest in ion beams for controlling nano-crystals synthesis in glasses. We show two different ways to reach this aim, insisting on importance of redox phenomena induced by the penetration and implantation of ions in glasses. We first show that we can use the great energy density deposited by the ions to tailor reducing conditions, favorable to metallic nano-crystal precipitation. In particular, we show that microscopic mechanism of radiation induced silver precipitation in glasses are analogous to the ones of classical photography. Ion beams can also be used to overcome supersaturation of elements in a given matrix. In this work, we synthesized lead chalcogenide nano-crystals (PbS, PbSe, PbTe) whose optical properties are interesting for telecommunication applications. We demonstrate the influence of complex chalcogenide chemistry in oxide glasses, and its relationship with the observed loss of growth control when nano-crystals are synthesized by sequential implantation of Pb and S in pure silica. As a consequence of this understanding, we demonstrate a novel and controlled synthesis of PbS nano-crystals, consisting in implanting sulfur into a Pb-containing glass, before annealing. Choice of glass composition provides a better control of precipitation physico-chemistry, whereas the use of implantation allows high nano-crystal volume fractions to be reached. Our study of IR emission properties of these nano-crystals shows a very high excitation cross section, and evidence for a 'dark exciton' emitting level. (author)

Conductivity in Ag-As-S(Se,Te) chalcogenide glasses

Czech Academy of Sciences Publication Activity Database

Stehlík, Š.; Kolář, J.; Bartoš, M.; Vlček, Milan; Frumar, M.; Zima, Vítězslav; Wágner, T.

2010-01-01

Roč. 181, 37/38 (2010), s. 1625-1630 ISSN 0167-2738 Institutional research plan: CEZ:AV0Z40500505 Keywords : chalcogenide glasses * ionics conductivity * phase separation Subject RIV: CA - Inorganic Chemistry Impact factor: 2.496, year: 2010

Aerogels Handbook

CERN Document Server

Aegerter, Michel A; Koebel, Matthias M

2011-01-01

Aerogels are the lightest solids known. Up to 1000 times lighter than glass and with a density as low as only four times that of air, they show very high thermal, electrical and acoustic insulation values and hold many entries in Guinness World Records. Originally based on silica, R&D efforts have extended this class of materials to non-silicate inorganic oxides, natural and synthetic organic polymers, carbon, metal and ceramic materials, etc. Composite systems involving polymer-crosslinked aerogels and interpenetrating hybrid networks have been developed and exhibit remarkable mechanical strength and flexibility. Even more exotic aerogels based on clays, chalcogenides, phosphides, quantum dots, and biopolymers such as chitosan are opening new applications for the construction, transportation, energy, defense and healthcare industries. Applications in electronics, chemistry, mechanics, engineering, energy production and storage, sensors, medicine, nanotechnology, military and aerospace, oil and gas recove...

Cavity optomechanics in gallium phosphide microdisks

International Nuclear Information System (INIS)

Mitchell, Matthew; Barclay, Paul E.; Hryciw, Aaron C.

2014-01-01

We demonstrate gallium phosphide (GaP) microdisk optical cavities with intrinsic quality factors >2.8 × 10 5 and mode volumes 3 , and study their nonlinear and optomechanical properties. For optical intensities up to 8.0 × 10 4 intracavity photons, we observe optical loss in the microcavity to decrease with increasing intensity, indicating that saturable absorption sites are present in the GaP material, and that two-photon absorption is not significant. We observe optomechanical coupling between optical modes of the microdisk around 1.5 μm and several mechanical resonances, and measure an optical spring effect consistent with a theoretically predicted optomechanical coupling rate g 0 /2π∼30 kHz for the fundamental mechanical radial breathing mode at 488 MHz

Debye temperatures of uranium chalcogenides from their lattice ...

Indian Academy of Sciences (India)

Phonon dispersion relations in uranium chalcogenides have been investigated using a modified three-body force shell model. From the phonon frequencies, their Debye temperatures are evaluated. Further, on the basis of the spin fluctuation in the heavy fermion uranium compounds, UPt3 and UBe13, the possible ...

Theoretical study of phonon dispersion, elastic, mechanical and thermodynamic properties of barium chalcogenides

Science.gov (United States)

Musari, A. A.; Orukombo, S. A.

2018-03-01

Barium chalcogenides are known for their high-technological importance and great scientific interest. Detailed studies of their elastic, mechanical, dynamical and thermodynamic properties were carried out using density functional theory and plane-wave pseudo potential method within the generalized gradient approximation. The optimized lattice constants were in good agreement when compared with experimental data. The independent elastic constants, calculated from a linear fit of the computed stress-strain function, were used to determine the Young’s modulus (E), bulk modulus (B), shear modulus (G), Poisson’s ratio (σ) and Zener’s anisotropy factor (A). Also, the Debye temperature and sound velocities for barium chalcogenides were estimated from the three independent elastic constants. The calculations of phonon dispersion showed that there are no negative frequencies throughout the Brillouin zone. Hence barium chalcogenides have dynamically stable NaCl-type crystal structure. Finally, their thermodynamic properties were calculated in the temperature range of 0-1000 K and their constant-volume specific heat capacities at room-temperature were reported.

Amorphous chalcogenides advances and applications

CERN Document Server

Wang, Rong Ping

2014-01-01

This book provides a comprehensive overview of the chalcogenide glass science and various applications based on the glasses. It starts with a review on the glass-forming ability of various systems, followed by a discussion on the structural and physical properties of various chalcolgenide glasses and their application in integrated optics. The chapters have been contributed by prominent experts from all over the world, and therefore, the book presents the recent research advances in the area. This book will appeal to anyone who is involved in glass science and technology and glass application.

Treatment of Aluminium Phosphide Poisoning with a Combination of Intravenous Glucagon, Digoxin and Antioxidant Agents

Directory of Open Access Journals (Sweden)

Zohreh Oghabian

2016-08-01

Full Text Available Aluminium phosphide (AlP is used to protect stored grains from rodents. It produces phosphine gas (PH3, a mitochondrial poison thought to cause toxicity by blocking the cytochrome c oxidase enzyme and inhibiting oxidative phosphorylation, which results in cell death. AlP poisoning has a high mortality rate among humans due to the rapid onset of cardiogenic shock and metabolic acidosis, despite aggressive treatment. We report a 21-yearold male who was referred to the Afzalipour Hospital, Kerman, Iran, in 2015 after having intentionally ingested a 3 g AlP tablet. He was successfully treated with crystalloid fluids, vasopressors, sodium bicarbonate, digoxin, glucagon and antioxidant agents and was discharged from the hospital six days after admission in good clinical condition. For the treatment of AlP poisoning, the combination of glucagon and digoxin with antioxidant agents should be considered. However, evaluation of further cases is necessary to optimise treatment protocols.

Photoinduced Operation by Absorption of the Chalcogenide Nanocrystallite Containing Solar Cells

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Elnaggar A.M.

2016-12-01

Full Text Available It is shown that for the solar cells containing chalcogenide nanocrystallites using external laser light, one can achieve some enhancement of the photovoltaic efficiency. Photoinduced treatment was carried out using two beams of splitted Er: glass laser operating at 1.54 μm. The light of the laser was incident at different angles and the angles between the beams also were varied. Also, the studies of nanocomposite effective structures have shown enhancement of effective nanocrystalline sizes during the laser treatment. Nanocrystallites of CuInS2 and CuZnSnS4 (CZTS were used as chalcogenide materials. The optimization of the laser beam intensities and nanoparticle sizes were explored.

Plain abdominal radiography: A powerful tool to prognosticate outcome in patients with zinc phosphide poisoning

International Nuclear Information System (INIS)

Hassanian-Moghaddam, H.; Shahnazi, Makhtoom; Zamani, N.; Rahimi, M.; Bahrami-Motlagh, H.; Amiri, H.

2014-01-01

Aim: To evaluate the clinical features of zinc phosphide poisoning and to investigate whether outcome could be prognosticated based on abdominal radiography on presentation. Materials and methods: All zinc phosphide-poisoned patients who were referred to Loghman-Hakim Hospital between March 2011 and September 2013 were retrospectively reviewed. Data regarding patients' demographic characteristics, characteristics of the poisoning, abdominal radiography results, and patients' outcome were recorded. Results: In 102 patients, the most common presenting signs/symptoms were nausea and vomiting (60%). Four patients died and another seven had developed complications during their hospitalization (metabolic acidosis, liver abnormalities, or acute renal failure). Nineteen patients had radio-opaque abdominal radiographs, nine of whom had died or developed complications (p = 0.001). Plain abdominal radiography had a sensitivity and specificity of 81% and 89% in predicting the patients' death or further development of complications. The positive and negative predictive values were 47% and 97%, respectively. Conclusion: Plain abdominal radiography is a very good tool for prognostication in patients with zinc phosphide poisoning. Immediate abdominal radiography can help stratify patients into high- or low-risk groups and determine treatment strategies. - Highlights: • ZP poisoning may cause severe symptoms or death although less frequent compared to ALP. • ZP-poisoned patients may deteriorate within the first 72 hours post-ingestion. • Abdominal radiography is a good tool to predict death/complications in these patients

Electrocatalytic activity of cobalt phosphide-modified graphite felt toward VO2+/VO2+ redox reaction

Science.gov (United States)

Ge, Zhijun; Wang, Ling; He, Zhangxing; Li, Yuehua; Jiang, Yingqiao; Meng, Wei; Dai, Lei

2018-04-01

A novel strategy for improving the electro-catalytic properties of graphite felt (GF) electrode in vanadium redox flow battery (VRFB) is designed by depositing cobalt phosphide (CoP) onto GF surface. The CoP powder is synthesized by direct carbonization of Co-based zeolitic imidazolate framework (ZIF-67) followed by phosphidation. Cyclic voltammetry results confirm that the CoP-modified graphite felt (GF-CoP) electrode has excellent reversibility and electro-catalytic activity to the VO2+/VO2+ cathodic reaction compared with the pristine GF electrode. The cell using GF-CoP electrode shows apparently higher discharge capacity over that based on GF electrode. The cell using GF-CoP electrode has the capacity of 67.2 mA h at 100 mA cm-2, 32.7 mA h larger than that using GF electrode. Compared with cell using GF electrode, the voltage efficiency of the cell based on GF-CoP electrode increases by 5.9% and energy efficiency by 5.4% at a current density of 100 mA cm-2. The cell using GF-CoP electrode can reach 94.31% capacity retention after 50 cycles at a current density of 30 mA cm-2. The results show that the CoP can effectively promote the VO2+/VO2+ redox reaction, implying that metal phosphides are a new kind of potential catalytic materials for VRFB.

Rodenticide Comparative Effect of Klerat® and Zinc Phosphide for Controlling Zoonotic Cutaneous Leishmaniasis in Central Iran

Directory of Open Access Journals (Sweden)

Arshad VEYSI

2016-12-01

Full Text Available Background: Zoonotic cutaneous leishmaniasis (ZCL is a neglected disease with public health importance that is common in many rural areas of Iran. In recent years, behavioral resistance and/or bait shyness against the common rodenticide among reservoir hosts of ZCL have been reported. The aim of this study was to evaluate the effectiveness of Klerat® and zinc phosphide against natural reservoir of ZCL.Methods: This survey was carried out in four villages located 45 to 95 km far from Esfahan City Esfahan province, central Iran from April to November 2011. The rodent burrows were counted destroyed and reopened holes baited around all villages. Effect of rodent control operation on the main vector density and incidence of ZCL were evaluated.Results: The reduction rate of rodent burrows after intervention calculated to be at 62.8% in Klerat® and 58.15% in zinc phosphide treated areas. Statistical analysis showed no difference between the densities of the vector in indoors and outdoors in intervention and control areas. The incidence of the disease between treated and control areas after intervention was statistically different (P< 0.05.Conclusion: Klerat® could be a suitable alternative for zinc phosphide in a specific condition such as behavior resistance or occurrence of bait shyness.

The structural heterogeneity and optical properties in chalcogenide glass films

International Nuclear Information System (INIS)

Shurgalin, Max; Fuflyigin, Vladimir N; Anderson, Emilia G

2005-01-01

The microscopic structure and optical properties of glassy films prepared by vapour phase deposition process from the germanium-arsenic-selenium family of chalcogenide glasses have been studied. A number of different molecular clusters or domains that can exist in the glass structure are found to play a significant role in determining the absorption characteristics and refractive index of the glass films. Modifications of the glass structure can be described by a variation of relative concentrations of the clusters and can be effected by modifications of film chemical composition and deposition conditions. Changes in absorption spectra are directly correlated with variation in relative concentrations of the structural fragments with different electronic bandgap properties. Experimental results suggest structural heterogeneity and support validity of the cluster structural model for the chalcogenide glasses

Efficient Mid-Infrared Supercontinuum Generation in Tapered Large Mode Area Chalcogenide Photonic Crystal Fibers

DEFF Research Database (Denmark)

Petersen, Christian Rosenberg; Engelsholm, Rasmus Dybbro; Markos, Christos

2017-01-01

Mid-infrared supercontinuum spanning from 1.8-9  μm with an output power of 41.5 mW is demonstrated by pumping tapered large mode area chalcogenide photonic crystal fibers using a 4 μm optical parametric source.......Mid-infrared supercontinuum spanning from 1.8-9  μm with an output power of 41.5 mW is demonstrated by pumping tapered large mode area chalcogenide photonic crystal fibers using a 4 μm optical parametric source....

Towards efficient solar-to-hydrogen conversion: Fundamentals and recent progress in copper-based chalcogenide photocathodes

Directory of Open Access Journals (Sweden)

Chen Yubin

2016-09-01

Full Text Available Photoelectrochemical (PEC water splitting for hydrogen generation has been considered as a promising route to convert and store solar energy into chemical fuels. In terms of its large-scale application, seeking semiconductor photoelectrodes with high efficiency and good stability should be essential. Although an enormous number of materials have been explored for solar water splitting in the last several decades, challenges still remain for the practical application. P-type copper-based chalcogenides, such as Cu(In, GaSe2 and Cu2ZnSnS4, have shown impressive performance in photovoltaics due to narrow bandgaps, high absorption coefficients, and good carrier transport properties. The obtained high efficiencies in photovoltaics have promoted the utilization of these materials into the field of PEC water splitting. A comprehensive review on copper-based chalcogenides for solar-to-hydrogen conversion would help advance the research in this expanding area. This review will cover the physicochemical properties of copper-based chalco-genides, developments of various photocathodes, strategies to enhance the PEC activity and stability, introductions of tandem PEC cells, and finally, prospects on their potential for the practical solar-to-hydrogen conversion. We believe this review article can provide some insights of fundamentals and applications of copper-based chalco-genide thin films for PEC water splitting.

Theoretical prediction of the structural properties of uranium chalcogenides under high pressure

Science.gov (United States)

Kapoor, Shilpa; Yaduvanshi, Namrata; Singh, Sadhna

2018-05-01

Uranium chalcogenides crystallize in rock salt structure at normal condition and transform to Cesium Chloride structure at high pressure. We have investigated the transition pressure and volume drop of USe and UTe using three body potential model (TBIP). Present model includes long range Columbic, three body interaction forces and short range overlap forces operative up to next nearest neighbors. We have reported the phase transition pressure, relative volume collapses, the thermo physical properties such as molecular force constant (f), infrared absorption frequency (v0), Debye temperature (θD) and Gruneisen parameter (γ) of present chalcogenides and found that our results in general good agreement with experimental and other theoretical data.

GXRD study of 100 MeV Fe9+ ion irradiated indium phosphide

International Nuclear Information System (INIS)

Dubey, R.L.; Dubey, S.K.; Kachhap, N.K.; Kanjilal, D.

2014-01-01

Swift heavy ions with MeV to GeV kinetic energy offer unique possibilities of modifying material properties. Each projectile passing through the target material causes loss of its energy by ion-electrons and ion-atoms interaction with the target material. The consequence of formal one is to change in surface properties and latter to produces damage deep in the target material near the projected range of projectile. In the present work, indium phosphide samples were irradiated at 100 MeV 56 Fe 9+ ions with different fluences varying from 1x10 12 to 1x10 14 ions cm -2 using the 15UD Pelletron facilities at Inter University Accelerator Centre (IUAC), New Delhi. Grazing angle X-ray diffraction technique was used to investigate the structural properties of irradiated indium phosphide at different depths. The GXRD spectra of non-irradiated and irradiated samples were recorded at different grazing angle i.e 1°, 2°, 3°, 4° and 5° to get the structural information over the projected range. The detailed result will be presented and discussed in the conference. (author)

Electrical conduction mechanism in GeSeSb chalcogenide glasses

Indian Academy of Sciences (India)

by melt quenching has been determined at different temperatures in bulk through the I–V characteristic curves ... DC conductivity; chalcogenide glass; Sb–Se bonding; Poole–Frenkel mechanism .... measurements were taken at room temperature as well as ele- .... age across the sample was continuued, the induced thermal.

2D Metal Chalcogenides Incorporated into Carbon and their Assembly for Energy Storage Applications.

Science.gov (United States)

Deng, Zongnan; Jiang, Hao; Li, Chunzhong

2018-05-01

2D metal chalcogenides have become a popular focus in the energy storage field because of their unique properties caused by their single-atom thicknesses. However, their high surface energy and van der Waals attraction easily cause serious stacking and restacking, leading to the generation of more inaccessible active sites with rapid capacity fading. The hybridization of 2D metal chalcogenides with highly conductive materials, particularly, incorporating ultrasmall and few-layered metal chalcogenides into carbon frameworks, can not only maximize the exposure of active sites but also effectively avoid their stacking and aggregation during the electrochemical reaction process. Therefore, a satisfactory specific capacity will be achieved with a long cycle life. In this Concept, the representative progress on such intriguing nanohybrids and their applications in energy storage devices are mainly summarized. Finally, an outlook of the future development and challenges of such nanohybrids for achieving an excellent energy storage capability is also provided. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Novel, high-activity hydroprocessing catalysts: Iron group phosphides

Science.gov (United States)

Wang, Xianqin

A series of iron, cobalt and nickel transition metal phosphides was synthesized by means of temperature-programmed reduction (TPR) of the corresponding phosphates. The same materials, Fe2P, CoP and NO, were also prepared on a silica (SiO2) support. The phase purity of these catalysts was established by x-ray diffraction (XRD), and the surface properties were determined by N2 BET specific surface area (Sg) measurements and CO chemisorption. The activities of the silica-supported catalysts were tested in a three-phase trickle bed reactor for the simultaneous hydrodenitrogenation (HDN) of quinoline and hydrodesulfurization (HDS) of dibenzothiophene using a model liquid feed at realistic conditions (30 atm, 370°C). The reactivity studies showed that the nickel phosphide (Ni2P/SiO2) was the most active of the catalysts. Compared with a commercial Ni-Mo-S/gamma-Al 2O3 catalyst at the same conditions, Ni2P/silica had a substantially higher HDS activity (100% vs. 76%) and HDN activity (82% vs. 38%). Because of their good hydrotreating activity, an extensive study of the preparation of silica supported nickel phosphides, Ni2P/SiO 2, was carried out. The parameters investigated were the phosphorus content and the weight loading of the active phase. The most active composition was found to have a starting synthesis Ni/P ratio close to 1/2, and the best loading of this sample on silica was observed to be 18 wt.%. Extended x-ray absorption fine structure (EXAFS) and x-ray absorption near edge spectroscopy (XANES) measurements were employed to determine the structures of the supported samples. The main phase before and after reaction was found to be Ni2P, but some sulfur was found to be retained after reaction. A comprehensive scrutiny of the HDN reaction mechanism was also made over the Ni2P/SiO2 sample (Ni/P = 1/2) by comparing the HDN activity of a series of piperidine derivatives of different structure. It was found that piperidine adsorption involved an alpha-H activation

Hydrazine-Assisted Formation of Indium Phosphide (InP)-Based Nanowires and Core-Shell Composites.

Science.gov (United States)

Patzke, Greta R; Kontic, Roman; Shiolashvili, Zeinab; Makhatadze, Nino; Jishiashvili, David

2012-12-27

Indium phosphide nanowires (InP NWs) are accessible at 440 °C from a novel vapor phase deposition approach from crystalline InP sources in hydrazine atmospheres containing 3 mol % H₂O. Uniform zinc blende (ZB) InP NWs with diameters around 20 nm and lengths up to several tens of micrometers are preferably deposited on Si substrates. InP particle sizes further increase with the deposition temperature. The straightforward protocol was extended on the one-step formation of new core-shell InP-Ga NWs from mixed InP/Ga source materials. Composite nanocables with diameters below 20 nm and shells of amorphous gallium oxide are obtained at low deposition temperatures around 350 °C. Furthermore, InP/Zn sources afford InP NWs with amorphous Zn/P/O-coatings at slightly higher temperatures (400 °C) from analogous setups. At 450 °C, the smooth outer layer of InP-Zn NWs is transformed into bead-shaped coatings. The novel combinations of the key semiconductor InP with isotropic insulator shell materials open up interesting application perspectives in nanoelectronics.

Neutron powder diffraction studies of Hydrogen and Denterium in Palladium Phosphides

International Nuclear Information System (INIS)

Andersson, Y.

1986-01-01

The use of the Rietveld-type profile refinements on neutron powder diffraction intensity data for determining crystallographic positions of hydrogen and deuterium in metal hydrides is illustrated by results obtained on some hydrogenated and deuterated palladium phosphides. The structural features of the solid solutions of hydrogen and deuterium in Pd/sb15/P/sb2/ Pd/sb6/P and Pd/sb3/P/sb1-u/ (0< u<0.28) are briefly presented and discussed

Case studies on the formation of chalcogenide self-assembled monolayers on surfaces and dissociative processes

Directory of Open Access Journals (Sweden)

Yongfeng Tong

2016-02-01

Full Text Available This report examines the assembly of chalcogenide organic molecules on various surfaces, focusing on cases when chemisorption is accompanied by carbon–chalcogen atom-bond scission. In the case of alkane and benzyl chalcogenides, this induces formation of a chalcogenized interface layer. This process can occur during the initial stages of adsorption and then, after passivation of the surface, molecular adsorption can proceed. The characteristics of the chalcogenized interface layer can be significantly different from the metal layer and can affect various properties such as electron conduction. For chalcogenophenes, the carbon–chalcogen atom-bond breaking can lead to opening of the ring and adsorption of an alkene chalcogenide. Such a disruption of the π-electron system affects charge transport along the chains. Awareness about these effects is of importance from the point of view of molecular electronics. We discuss some recent studies based on X-ray photoelectron spectroscopy that shed light on these aspects for a series of such organic molecules.

Study of third order nonlinearity of chalcogenide thin films using third harmonic generation measurements

Science.gov (United States)

Rani, Sunita; Mohan, Devendra; Kumar, Manish; Sanjay

2018-05-01

Third order nonlinear susceptibility of (GeSe3.5)100-xBix (x = 0, 10, 14) and ZnxSySe100-x-y (x = 2, y = 28; x = 4, y = 20; x = 6, y = 12; x = 8, y = 4) amorphous chalcogenide thin films prepared using thermal evaporation technique is estimated. The dielectric constant at incident and third harmonic wavelength is calculated using "PARAV" computer program. 1064 nm wavelength of Nd: YAG laser is incident on thin film and third harmonic signal at 355 nm wavelength alongwith fundamental light is obtained in reflection that is separated from 1064 nm using suitable optical filter. Reflected third harmonic signal is measured to trace the influence of Bi and Zn on third order nonlinear susceptibility and is found to increase with increase in Bi and Zn content in (GeSe3.5)100-xBix, and ZnxSySe100-x-y chalcogenide thin films respectively. The excellent optical nonlinear property shows the use of chalcogenide thin films in photonics for wavelength conversion and optical data processing.

THz waveguides, devices and hybrid polymer-chalcogenide photonic crystal fibers

DEFF Research Database (Denmark)

Bao, Hualong; Markos, Christos; Nielsen, Kristian

2014-01-01

In this contribution, we review our recent activities in the design, fabrication and characterization of polymer THz waveguides. Besides the THz waveguides, we finally will also briefly show some of our initial results on a novel hybrid polymer photonic crystal fiber with integrated chalcogenide...

Three-dimensional interconnected nickel phosphide networks with hollow microstructures and desulfurization performance

International Nuclear Information System (INIS)

Zhang, Shuna; Zhang, Shujuan; Song, Limin; Wu, Xiaoqing; Fang, Sheng

2014-01-01

Graphical abstract: Three-dimensional interconnected nickel phosphide networks with hollow microstructures and desulfurization performance. - Highlights: • Three-dimensional Ni 2 P has been prepared using foam nickel as a template. • The microstructures interconnected and formed sponge-like porous networks. • Three-dimensional Ni 2 P shows superior hydrodesulfurization activity. - Abstract: Three-dimensional microstructured nickel phosphide (Ni 2 P) was fabricated by the reaction between foam nickel (Ni) and phosphorus red. The as-prepared Ni 2 P samples, as interconnected networks, maintained the original mesh structure of foamed nickel. The crystal structure and morphology of the as-synthesized Ni 2 P were characterized by X-ray diffraction, scanning electron microscopy, automatic mercury porosimetry and X-ray photoelectron spectroscopy. The SEM study showed adjacent hollow branches were mutually interconnected to form sponge-like networks. The investigation on pore structure provided detailed information for the hollow microstructures. The growth mechanism for the three-dimensionally structured Ni 2 P was postulated and discussed in detail. To investigate its catalytic properties, SiO 2 supported three-dimensional Ni 2 P was prepared successfully and evaluated for the hydrodesulfurization (HDS) of dibenzothiophene (DBT). DBT molecules were mostly hydrogenated and then desulfurized by Ni 2 P/SiO 2

On the instability effects in radiation-sensitive chalcogenide glasses

International Nuclear Information System (INIS)

Balitska, V.; Kovalskiy, A.; Shpotyuk, O.; Vakiv, M.

2007-01-01

The features of application of radiation-sensitive media based on chalcogenide glasses of As-Ge-S system for registration of high-energy γ-radiation are analysed. It is shown that compositional features of the observed time-instability effect should be taken into account in order to ensure a higher accuracy of the developed dosimeters

On the instability effects in radiation-sensitive chalcogenide glasses

Energy Technology Data Exchange (ETDEWEB)

Balitska, V. [Lviv State University for Vital Activity Safety, 35 Kleparivska str., Lviv, UA-79007 (Ukraine); Lviv Institute of Materials of SRC ' Carat' , 202 Stryjska str., Lviv, UA-79031 (Ukraine); Kovalskiy, A. [Lviv Institute of Materials of SRC ' Carat' , 202 Stryjska str., Lviv, UA-79031 (Ukraine); International Materials Institute for New Functionality in Glass, Lehigh University, 5 East Packer Avenue, Bethlehem, PA 18015-3195 (United States); Shpotyuk, O. [Lviv Institute of Materials of SRC ' Carat' , 202 Stryjska str., Lviv, UA-79031 (Ukraine); International Materials Institute for New Functionality in Glass, Lehigh University, 5 East Packer Avenue, Bethlehem, PA 18015-3195 (United States)], E-mail: shpotyuk@novas.lviv.ua; Vakiv, M. [Lviv Institute of Materials of SRC ' Carat' , 202 Stryjska str., Lviv, UA-79031 (Ukraine)

2007-04-15

The features of application of radiation-sensitive media based on chalcogenide glasses of As-Ge-S system for registration of high-energy {gamma}-radiation are analysed. It is shown that compositional features of the observed time-instability effect should be taken into account in order to ensure a higher accuracy of the developed dosimeters.

Direct Electrospray Printing of Gradient Refractive Index Chalcogenide Glass Films.

Science.gov (United States)

Novak, Spencer; Lin, Pao Tai; Li, Cheng; Lumdee, Chatdanai; Hu, Juejun; Agarwal, Anuradha; Kik, Pieter G; Deng, Weiwei; Richardson, Kathleen

2017-08-16

A spatially varying effective refractive index gradient using chalcogenide glass layers is printed on a silicon wafer using an optimized electrospray (ES) deposition process. Using solution-derived glass precursors, IR-transparent Ge 23 Sb 7 S 70 and As 40 S 60 glass films of programmed thickness are fabricated to yield a bilayer structure, resulting in an effective gradient refractive index (GRIN) film. Optical and compositional analysis tools confirm the optical and physical nature of the gradient in the resulting high-optical-quality films, demonstrating the power of direct printing of multimaterial structures compatible with planar photonic fabrication protocols. The potential application of such tailorable materials and structures as they relate to the enhancement of sensitivity in chalcogenide glass based planar chemical sensor device design is presented. This method, applicable to a broad cross section of glass compositions, shows promise in directly depositing GRIN films with tunable refractive index profiles for bulk and planar optical components and devices.

Thermal, electronic and ductile properties of lead-chalcogenides under pressure.

Science.gov (United States)

Gupta, Dinesh C; Bhat, Idris Hamid

2013-09-01

Fully relativistic pseudo-potential ab-initio calculations have been performed to investigate the high pressure phase transition, elastic and electronic properties of lead-chalcogenides including the less known lead polonium. The calculated ground state parameters, for the rock-salt structure show good agreement with the experimental data. PbS, PbSe, PbTe and PbPo undergo a first-order phase transition from rock-salt to CsCl structure at 19.4, 15.5, 11.5 and 7.3 GPa, respectively. The elastic properties have also been calculated. The calculations successfully predicted the location of the band gap at L-point of Brillouin zone and the band gap for each material at ambient pressure. It is observed that unlike other lead-chalcogenides, PbPo is semi-metal at ambient pressure. The pressure variation of the energy gap indicates that these materials metalize under pressure. The electronic structures of these materials have been computed in parent as well as in high pressure B2 phase.

AC surface photovoltage of indium phosphide nanowire networks

Energy Technology Data Exchange (ETDEWEB)

Lohn, Andrew J.; Kobayashi, Nobuhiko P. [California Univ., Santa Cruz, CA (United States). Baskin School of Engineering; California Univ., Santa Cruz, CA (US). Nanostructured Energy Conversion Technology and Research (NECTAR); NASA Ames Research Center, Moffett Field, CA (United States). Advanced Studies Laboratories

2012-06-15

Surface photovoltage is used to study the dynamics of photogenerated carriers which are transported through a highly interconnected three-dimensional network of indium phosphide nanowires. Through the nanowire network charge transport is possible over distances far in excess of the nanowire lengths. Surface photovoltage was measured within a region 10.5-14.5 mm from the focus of the illumination, which was chopped at a range of frequencies from 15 Hz to 30 kHz. Carrier dynamics were modeled by approximating the nanowire network as a thin film, then fitted to experiment suggesting diffusion of electrons and holes at approximately 75% of the bulk value in InP but with significantly reduced built-in fields, presumably due to screening by nanowire surfaces. (orig.)

A Plasma-Assisted Route to the Rapid Preparation of Transition-Metal Phosphides for Energy Conversion and Storage

KAUST Repository

Liang, Hanfeng; Alshareef, Husam N.

2017-01-01

with the method of preparation as the electronic, catalytic, and magnetic properties of the metal phosphides strongly depend on their synthesis routes. Commonly practiced processes such as solid-state synthesis and ball milling have proven to be reliable routes

Reversibility windows in selenide-based chalcogenide glasses

International Nuclear Information System (INIS)

Shpotyuk, O.; Hyla, M.; Boyko, V.; Golovchak, R.

2008-01-01

A simple route for the estimation of the reversibility windows in the sense of non-ageing ability is developed for chalcogenide glasses obeying '8-N' rule at the example of As-Se, Ge-Se and Ge-As-Se glass systems. The low limit of their reversibility windows is determined at the average coordination number Z=2.4 in full agreement with rigidity percolation theory, while the upper limit is shown to be related to the glass preparation conditions and samples prehistory

Reversibility windows in selenide-based chalcogenide glasses

Energy Technology Data Exchange (ETDEWEB)

Shpotyuk, O. [Lviv Scientific Research Institute of Materials of SRC ' Carat' , 202, Stryjska Street, Lviv, UA 79031 (Ukraine); Institute of Physics of Jan Dlugosz University, 13/15, al. Armii Krajowej, Czestochowa, PL 42200 (Poland); Hyla, M. [Institute of Physics of Jan Dlugosz University, 13/15, al. Armii Krajowej, Czestochowa, PL 42200 (Poland); Boyko, V. [Lviv Scientific Research Institute of Materials of SRC ' Carat' , 202, Stryjska Street, Lviv, UA 79031 (Ukraine); Lviv National Polytechnic University, 12, Bandera Street, Lviv, UA 79013 (Ukraine); Golovchak, R. [Lviv Scientific Research Institute of Materials of SRC ' Carat' , 202, Stryjska Street, Lviv, UA 79031 (Ukraine)], E-mail: golovchak@novas.lviv.ua

2008-10-01

A simple route for the estimation of the reversibility windows in the sense of non-ageing ability is developed for chalcogenide glasses obeying '8-N' rule at the example of As-Se, Ge-Se and Ge-As-Se glass systems. The low limit of their reversibility windows is determined at the average coordination number Z=2.4 in full agreement with rigidity percolation theory, while the upper limit is shown to be related to the glass preparation conditions and samples prehistory.

Deposition of Ge{sub 23}Sb{sub 7}S{sub 70} chalcogenide glass films by electrospray

Energy Technology Data Exchange (ETDEWEB)

Novak, Spencer, E-mail: spencen@g.clemson.edu [Department of Materials Science and Engineering, COMSET, Clemson University, Clemson, SC (United States); College of Optics and Photonics, CREOL, University of Central FL (United States); Johnston, Danvers E.; Li, Cheng; Deng, Weiwei [Department of Mechanical and Aerospace Engineering, University of Central FL (United States); Richardson, Kathleen [Department of Materials Science and Engineering, COMSET, Clemson University, Clemson, SC (United States); College of Optics and Photonics, CREOL, University of Central FL (United States)

2015-08-03

Solution-based chalcogenide glass films, traditionally deposited by spin-coating, are attractive for their potential use in chip-based devices operating in the mid-infrared and for ease of nanostructure incorporation. To overcome limitations of spin-coating such as excessive material waste and difficulty for scale-up, this paper introduces electrospray as a film deposition technique for solution-based chalcogenide glasses. Electrospray is shown to produce Ge{sub 23}Sb{sub 7}S{sub 70} films with similar surface quality and optical properties as films deposited by spin-coating. The advantages of electrospray deposition for nanoparticle dispersion, scalable and continuous manufacturing with little material waste, and comparable film quality to spin-coating make electrospray a promising deposition method for practical applications of chalcogenide glass films. - Highlights: • Electrospray film deposition processing of Ge{sub 23}Sb{sub 7}S{sub 70} films was developed. • Traditional spin-coated films were also fabricated in parallel. • Optical properties and surface quality found to be similar between two approaches.

1D - photonic crystals prepared from the amorphous chalcogenide films

Czech Academy of Sciences Publication Activity Database

Kohoutek, T.; Orava, J.; Wágner, T.; Hrdlička, M.; Vlček, Milan; Frumar, M.

2009-01-01

Roč. 20, - (2009), S346-S350 ISSN 0957-4522. [International Conference of Optical and Optoelectronic Materials and Applications. London, 29.07.2007-03.08.2007] Institutional research plan: CEZ:AV0Z40500505 Keywords : chalcogenide thin films Subject RIV: CA - Inorganic Chemistry Impact factor: 1.020, year: 2009

A feasibility study of unconventional planar ligand spacers in chalcogenide nanocrystals.

Science.gov (United States)

Lukose, Binit; Clancy, Paulette

2016-05-18

The solar cell efficiency of chalcogenide nanocrystals (quantum dots) has been limited in the past by the insulation between neighboring quantum dots caused by intervening, often long-chain, aliphatic ligands. We have conducted a computationally based feasibility study to investigate the use of ultra-thin, planar, charge-conducting ligands as an alternative to traditional long passive ligands. Not only might these radically unconventional ligands decrease the mean distance between adjacent quantum dots, but, since they are charge-conducting, they have the potential to actively enhance charge migration. Our ab initio studies compare the binding energies, electronic energy gaps, and absorption characteristics for both conventional and unconventional ligands, such as phthalocyanines, porphyrins and coronene. This comparison identified these unconventional ligands with the exception of titanyl phthalocyanine, that bind to themselves more strongly than to the surface of the quantum dot, which is likely to be less desirable for enhancing charge transport. The distribution of finite energy levels of the bound system is sensitive to the ligand's binding site and the levels correspond to delocalized states. We also observed a trap state localized on a single Pb atom when a sulfur-containing phenyldithiocarbamate (PTC) ligand is attached to a slightly off-stoichiometric dot in a manner that the sulfur of the ligand completes stoichiometry of the bound system. Hence, this is indicative of the source of trap state when thio-based ligands are bound to chalcogenide nanocrystals. We also predict that titanyl phthalocyanine in a mix with chalcogenide dots of diameter ∼1.5 Å can form a donor-acceptor system.

Preparation and electrical properties of boron and boron phosphide films obtained by gas source molecular beam deposition

Energy Technology Data Exchange (ETDEWEB)

Kumashiro, Y.; Yokoyama, T.; Sakamoto, T.; Fujita, T. [Yokohama National Univ. (Japan)

1997-10-01

Boron and boron phosphide films were prepared by gas source molecular beam deposition on sapphire crystal at various substrate temperatures up to 800{degrees}C using cracked B{sub 2}H{sub 6} (2% in H{sub 2}) at 300{degrees}C and cracked PH{sub 3} (20% in H{sub 2}) at 900{degrees}C. The substrate temperatures and gas flow rates of the reactant gases determined the film growth. The boron films with amorphous structure are p type. Increasing growth times lead to increasing mobilities and decreasing carrier concentrations. Boron phosphide film with maximum P/B ratio is obtained at a substrate temperature of 600{degrees}C, below and above which they become phosphorous deficient due to insufficient supply of phosphorus and thermal desorption of the phosphorus as P{sub 2}, respectively, but they are all n type conductors due to phosphorus vacancies.

Nanomaterials derived from metal-organic frameworks

Science.gov (United States)

Dang, Song; Zhu, Qi-Long; Xu, Qiang

2018-01-01

The thermal transformation of metal-organic frameworks (MOFs) generates a variety of nanostructured materials, including carbon-based materials, metal oxides, metal chalcogenides, metal phosphides and metal carbides. These derivatives of MOFs have characteristics such as high surface areas, permanent porosities and controllable functionalities that enable their good performance in sensing, gas storage, catalysis and energy-related applications. Although progress has been made to tune the morphologies of MOF-derived structures at the nanometre scale, it remains crucial to further our knowledge of the relationship between morphology and performance. In this Review, we summarize the synthetic strategies and optimized methods that enable control over the size, morphology, composition and structure of the derived nanomaterials. In addition, we compare the performance of materials prepared by the MOF-templated strategy and other synthetic methods. Our aim is to reveal the relationship between the morphology and the physico-chemical properties of MOF-derived nanostructures to optimize their performance for applications such as sensing, catalysis, and energy storage and conversion.

An electrocardiographic, molecular and biochemical approach to explore the cardioprotective effect of vasopressin and milrinone against phosphide toxicity in rats.

Science.gov (United States)

Jafari, Abbas; Baghaei, Amir; Solgi, Reza; Baeeri, Maryam; Chamanara, Mohsen; Hassani, Shokoufeh; Gholami, Mahdi; Ostad, Seyed Nasser; Sharifzadeh, Moahmmad; Abdollahi, Mohammad

2015-06-01

The present study was conducted to identify the protective effect of vasopressin (AVP) and milrinone on cardiovascular function, mitochondrial complex activities, cellular ATP reserve, oxidative stress, and apoptosis in rats poisoned by aluminum phosphide (AlP). Rats were divided into five groups (n = 12) including control, AlP (12.5 mg/kg), AlP + AVP (2.0 Units/kg), AlP + milrinone (0.25 mg/kg) and AlP + AVP + milrinone. After treatment, the animals were connected to an electronic cardiovascular monitoring device to monitor electrocardiographic (ECG) parameter. Finally, oxidative stress biomarkers, mitochondrial complex activities, ADP/ATP ratio and apoptosis were evaluated on the heart tissues. Results indicated that AlP administration induced ECG abnormalities along with a decline in blood pressure and heart rate. AVP and milrinone significantly ameliorated these changes in all treated groups. Considerable protective effects on oxidative stress biomarkers, complex IV activity, ADP/ATP ratio and caspase-3 and -9 activities in treated groups were also found. These findings were supported by flow cytometry assay of cardiomyocytes. In conclusion, administration of AVP and milrinone, not only improve cardiovascular functions in AlP poisoned rats in the short time, but after a long time can also restore mitochondrial function and ATP level and reduce the oxidative damage, which prevent cardiomyocytes from entering the apoptotic phase. Copyright © 2015 Elsevier Ltd. All rights reserved.

Ag2S deposited on oxidized polypropylene as composite material for solar light absorption

NARCIS (Netherlands)

Krylovaa, V.; Milbrat, Alexander; Embrachts, A.; Baltrusaitis, Jonas

2014-01-01

Thin film metal chalcogenides are superior solar light absorbers and can be combined into a functional material when deposited on polymeric substrates. Ag2S composite materials were synthesized on oxidized polypropylene using chemical bath deposition method and their properties were explored using

Peculiarities of electrooptical characteristics of gallium phosphide light-emitting diodes in high injection level conditions

Directory of Open Access Journals (Sweden)

O. M. Hontaruk

2015-04-01

Full Text Available Electroluminescence of green N-doped gallium phosphide light-emitting diodes was studied. The negative differential resistance region in the current-voltage characteristics was found at low temperature (Т ≤ 90 К. Possible reason of this phenomenon is the redistribution of recombinational flows between annihilation channels on isolated nitrogen atoms and annihilation channel on the NN1 pairs.

Phosphorus Dimerization in Gallium Phosphide at High Pressure

Energy Technology Data Exchange (ETDEWEB)

Lavina, Barbara [High Pressure Science and Engineering Center, University of Nevada, Las Vegas, Nevada 89154, United States; Department of Physics and Astronomy, University of Nevada, Las Vegas, Nevada 89154, United States; Kim, Eunja [Department of Physics and Astronomy, University of Nevada, Las Vegas, Nevada 89154, United States; Cynn, Hyunchae [Lawrence Livermore National Laboratory, Livermore, California 94550, United States; Weck, Philippe F. [Sandia National Laboratories, Albuquerque, New Mexico 87185, United States; Seaborg, Kelly [High Pressure Science and Engineering Center, University of Nevada, Las Vegas, Nevada 89154, United States; Department of Physics and Astronomy, University of Nevada, Las Vegas, Nevada 89154, United States; Siska, Emily [High Pressure Science and Engineering Center, University of Nevada, Las Vegas, Nevada 89154, United States; Meng, Yue [HPCAT, Carnegie Institution of Washington, Argonne, Illinois 60439, United States; Evans, William [Lawrence Livermore National Laboratory, Livermore, California 94550, United States

2018-02-09

Using combined experimental and computational approaches, we show that at 43 GPa and 1300 K gallium phosphide adopts the super-Cmcm structure, here indicated with its Pearson notation oS24. First-principles enthalpy calculations demonstrate that this structure is more thermodynamically stable above ~20 GPa than previously proposed polymorphs. Here, in contrast to other polymorphs, the oS24 phase shows a strong bonding differentiation and distorted fivefold coordination geometries of both P atoms. The shortest bond of the phase is a single covalent P–P bond measuring 2.171(11) Å at synthesis pressure. Phosphorus dimerization in GaP sheds light on the nature of the super-Cmcm phase and provides critical new insights into the high-pressure polymorphism of octet semiconductors. Bond directionality and anisotropy explain the relatively low symmetry of this high-pressure phase.

Mid-infrared supercontinuum generation spanning more than 11 μm in a chalcogenide step-index fiber

DEFF Research Database (Denmark)

Petersen, Christian Rosenberg; Møller, Uffe Visbech; Kubat, Irnis

2015-01-01

Supercontinuum generation covering an ultra-broad spectrum from 1.5-11.7μm and 1.4-13.3μm is experimentally demonstrated by pumping an 85mm chalcogenide step-index fiber with 100fs pulses at a wavelength of 4.5μm and 6.3μm, respectively.......Supercontinuum generation covering an ultra-broad spectrum from 1.5-11.7μm and 1.4-13.3μm is experimentally demonstrated by pumping an 85mm chalcogenide step-index fiber with 100fs pulses at a wavelength of 4.5μm and 6.3μm, respectively....

Proceedings of the first international conference on indium phosphide and related materials for advanced electronic and optical devices

International Nuclear Information System (INIS)

Singh, R.; Messick, L.J.

1989-01-01

This book contains the proceedings of the first international conference on indium phosphide and related materials for advanced electronic and optical devices. Topics covered include: Growth and characterization of bulk and epitaxial films, Passivation technology, Processing technology, High speed optoelectronic integrated circuits, and Solar cells

Ultrafast Laser Fabrication of Bragg Waveguides in GLS Chalcogenide Glass

Directory of Open Access Journals (Sweden)

McMillen Ben

2013-11-01

Full Text Available We present work on the fabrication of Bragg waveguides in gallium-lanthanum-sulfide chalcogenide glass using an ultrafast laser. Waveguides were written with a single pass while modulating the writing beam. The spatial and temporal profile of the writing beam was ontrolled during waveguide fabrication in order to control the shape and size of the waveguide cross-section.

HDO of Methyl Palmitate over Silica-Supported Ni Phosphides: Insight into Ni/P Effect

Directory of Open Access Journals (Sweden)

Irina V. Deliy

2017-10-01

Full Text Available Two sets of silica-supported nickel phosphide catalysts with a nickel content of about 2.5 and 10 wt % and Ni/P molar ratio 2/1, 1/1 and 1/2 in each set, were prepared by way of a temperature-programmed reduction method using (Ni(CH3COO2 and ((NH42HPO4 as a precursor. The NixPy/SiO2 catalysts were characterized using chemical analysis N2 physisorption, XRD, TEM, 31P MAS NMR. Methyl palmitate hydrodeoxygenation (HDO was performed in a trickle-bed reactor at 3 MPa and 290 °C with LHSV ranging from 0.3 to 16 h−1. The Ni/P ratio was found to affect the nickel phosphide phase composition, POx groups content and catalytic properties in methyl palmitate HDO with the TOF increased along with a decline of Ni/P ratio and a growth of POx groups’ content. Taking into account the possible routes of methyl palmitate conversion (metal-catalyzed hydrogenolysis or acid-catalyzed hydrolysis, we proposed that the enhancement of acid POx groups’ content with the Ni/P ratio decrease provides an enhancement of the rate of methyl palmitate conversion through the acceleration of acid-catalyzed hydrolysis.

Prediction of free-volume-type correlations in glassy chalcogenides from positron annihilation lifetime measurements

International Nuclear Information System (INIS)

Shpotyuk, O.; Ingram, A.; Shpotyuk, M.; Filipecki, J.

2014-01-01

Highlights: • Decisive role of specific chemical environment in free-volume correlations in glass. • Realistic free volumes in As–S/Se glass are defined by newly modified τ 2 -R formula. • Overestimated void sizes in chalcogenide glass as compared with molecular polymers. - Abstract: A newly modified correlation equation between defect-related positron lifetime determined within two-state trapping model and radius of corresponding free-volume-type defects was proposed to describe compositional variations in atomic-deficient structure of covalent-bonded chalcogenides like binary As–S/Se glasses. Specific chemical environment of free-volume voids around neighboring network-forming polyhedrons was shown to play a decisive role in this correlation, leading to systematically enhanced volumes in comparison with typical molecular substrates, such as polymers

Prediction of free-volume-type correlations in glassy chalcogenides from positron annihilation lifetime measurements

Energy Technology Data Exchange (ETDEWEB)

Shpotyuk, O., E-mail: shpotyuk@novas.lviv.ua [Institute of Materials of SRC “Carat”, 212 Stryjska Str., Lviv 79031 (Ukraine); Institute of Physics of Jan Dlugosz University, 13/15 al. Armii Krajowej, Czestcochowa 42200 (Poland); Ingram, A. [Opole University of Technology, 75 Ozimska Str., Opole 45370 (Poland); Shpotyuk, M. [Institute of Materials of SRC “Carat”, 212 Stryjska Str., Lviv 79031 (Ukraine); Lviv Polytechnic National University, 12 Bandery Str., Lviv 79013 (Ukraine); Filipecki, J. [Institute of Physics of Jan Dlugosz University, 13/15 al. Armii Krajowej, Czestcochowa 42200 (Poland)

2014-11-01

Highlights: • Decisive role of specific chemical environment in free-volume correlations in glass. • Realistic free volumes in As–S/Se glass are defined by newly modified τ{sub 2}-R formula. • Overestimated void sizes in chalcogenide glass as compared with molecular polymers. - Abstract: A newly modified correlation equation between defect-related positron lifetime determined within two-state trapping model and radius of corresponding free-volume-type defects was proposed to describe compositional variations in atomic-deficient structure of covalent-bonded chalcogenides like binary As–S/Se glasses. Specific chemical environment of free-volume voids around neighboring network-forming polyhedrons was shown to play a decisive role in this correlation, leading to systematically enhanced volumes in comparison with typical molecular substrates, such as polymers.

Properties of epitaxial films of indium phosphides alloyed with erbium in strong electric fields

International Nuclear Information System (INIS)

Borisov, V.I.; Dvoryankin, V.F.; Korobkin, V.A.; Kudryashov, A.A.; Lopatin, V.V.; Lyubchenko, V.E.; Telegin, A.A.

1986-01-01

Temperature dependences of specific resistance and free charge-carrier mobility at low temperatures for indium phosphide films grown by liquid-phase epitaxial method with erbium additions (0.01-0.1 mass%). The main mechanisms of scattering for different temperature regions: scattering on ionized impurities in the rage from 20 to 40 K and lattice scattering at the temperature above 90 K are determined. The current density dependences on applied electric field strength are presented

Iron based pnictide and chalcogenide superconductors studied by muon spin spectroscopy

International Nuclear Information System (INIS)

Shermadini, Zurab

2014-01-01

In the present thesis the superconducting properties of the Iron-based Ba 1-x Rb x Fe 2 As 2 arsenides, and A x Fe 2-y Se 2 (A=Cs,Rb,K) chalcogenides are investigated by means of Muon Spin Rotation Spectroscopy. The temperature and pressure dependence of the magnetic penetration depth is obtained form μSR experiments and analyzed to probe the superconducting gap-symmetries for each samples. The Ba 1-x Rb x Fe 2 As 2 system is described within the multi-gap s+s-wave scenario and results are discussed in the light of the suppression of inter-band processes upon hole doping. Due to the lowered upper critical field B c2 and reduced T c , a large section of B-T-p phase diagram is studied for the hole-overdoped x=1 case. By applying hydrostatic pressure, the RbFe 2 As 2 system exhibits a classical BCS superconducting characteristics. The A x Fe 2-y Se 2 chalcogenide represents a system containing magnetically ordered and superconducting phases simultaneously. In all investigated chalcogenide samples, about 90% of the total volume show the strong antiferromagnetic phase and 10% exhibit a paramagnetic behavior. Magnetization measurements reveal a 100% Meissner effect, while μSR clearly indicates that the paramagnetic phase is a perfect superconductor. Up to now, there is no clear evidence whether the antiferromagnetic phase is also superconducting. The microscopic coexistence and/or phase separation of superconductivity and magnetism is discussed. Moreover, a new hydrostatic double-wall pressure cell is developed and produced, satisfying the demands of μSR experiments. The designs and characteristics of the new pressure cell are reviewed in the present thesis.

Low-temperature photoluminescence in chalcogenide glasses doped with rare-earth ions

Czech Academy of Sciences Publication Activity Database

Kostka, Petr; Zavadil, Jiří; Iovu, M.S.; Ivanova, Z. G.; Furniss, D.; Seddon, A.B.

2015-01-01

Roč. 648, NOV 5 (2015), s. 237-243 ISSN 0925-8388 R&D Projects: GA ČR GAP106/12/2384 Institutional support: RVO:67985891 ; RVO:67985882 Keywords : chalcogenide glasses * rare earth ions * low-temperature photoluminescence * optical transmission Subject RIV: JH - Ceramics, Fire-Resistant Materials and Glass Impact factor: 3.014, year: 2015

Silicon-based thin films as bottom electrodes in chalcogenide nonvolatile memories

Energy Technology Data Exchange (ETDEWEB)

Lee, Seung-Yun [IT Convergence and Components Laboratory, Electronics and Telecommunications Research Institute (ETRI), Yuseong-gu, Daejeon 305-350 (Korea, Republic of)], E-mail: seungyun@etri.re.kr; Yoon, Sung-Min; Choi, Kyu-Jeong; Lee, Nam-Yeal; Park, Young-Sam; Ryu, Sang-Ouk; Yu, Byoung-Gon; Kim, Sang-Hoon; Lee, Sang-Heung [IT Convergence and Components Laboratory, Electronics and Telecommunications Research Institute (ETRI), Yuseong-gu, Daejeon 305-350 (Korea, Republic of)

2007-10-31

The effect of the electrical resistivity of a silicon-germanium (SiGe) thin film on the phase transition in a GeSbTe (GST) chalcogenide alloy and the manufacturing aspect of the fabrication process of a chalcogenide memory device employing the SiGe film as bottom electrodes were investigated. While p-type SiGe bottom electrodes were formed using in situ doping techniques, n-type ones could be made in a different manner where phosphorus atoms diffused from highly doped silicon underlayers to undoped SiGe films. The p-n heterojunction did not form between the p-type GST and n-type SiGe layers, and the semiconduction type of the SiGe alloys did not influence the memory device switching. It was confirmed that an optimum resistivity value existed for memory operation in spite of proportionality of Joule heating to electrical resistivity. The very high resistivity of the SiGe film had no effect on the reduction of reset current, which might result from the resistance decrease of the SiGe alloy at high temperatures.

Half-Metallic Ferromagnetism and Stability of Transition Metal Pnictides and Chalcogenides

Science.gov (United States)

Liu, Bang-Gui

It is highly desirable to explore robust half-metallic ferromagnetic materials compatible with important semiconductors for spintronic applications. A state-of-the-art full potential augmented plane wave method within the densityfunctional theory is reliable enough for this purpose. In this chapter we review theoretical research on half-metallic ferromagnetism and structural stability of transition metal pnictides and chalcogenides. We show that some zincblende transition metal pnictides are half-metallic and the half-metallic gap can be fairly wide, which is consistent with experiment. Systematic calculations reveal that zincblende phases of CrTe, CrSe, and VTe are excellent half-metallic ferromagnets. These three materials have wide half-metallic gaps, are low in total energy with respect to the corresponding ground-state phases, and, importantly, are structurally stable. Halfmetallic ferromagnetism is also found in wurtzite transition metal pnictides and chalcogenides and in transition-metal doped semiconductors as well as deformed structures. Some of these half-metallic materials could be grown epitaxially in the form of ultrathin .lms or layers suitable for real spintronic applications.

Pressure dependence of crystal field splitting in Pr pnictides and chalcogenides

International Nuclear Information System (INIS)

Schirber, J.E.; Weaver, H.T.; Ginley, D.S.

1978-01-01

We have measured the pressure dependence of the Pr nuclear magnetic resonance shift in PrN, PrP, PrSb, PrAs, PrS and PrSe. The shifts in all the pnictides increase while in the chalcogenides the shifts decrease with pressure. The rare earth frequency shift is inversely proportional to the crystal field splitting in the context of the point charge model (PCM) so a decrease would be expected for all of these materials at a rate of 5/3 the volume compressibility. Our values for the pnictides tend to be considerably larger than the PCM value as well as the wrong sign. The chalcogenide values are much nearer in magnitude and are of the right sign for the PCM. Contrary to the report of Guertin et al. we see no anomaly in the pressure dependence of the susceptibility of PrS. The fact that PrN which is reported to be non-metallic also shows the wrong sign for the PCM presents difficulties for various conduction electron explanations for this unexpected behavior of the pnictides

Formation of surface nanolayers in chalcogenide crystals using coherent laser beams

Science.gov (United States)

Ozga, K.; Fedorchuk, A. O.; El-Naggar, A. M.; Albassam, A. A.; Kityk, V.

2018-03-01

We have shown a possibility to form laser modified surface nanolayers with thickness up to 60 nm in some ternary chalcogenide crystals (Ag3AsS3, Ag3SbS3, Tl3SbS3) The laser treatment was performed by two coherent laser beams split in a space. As the inducing lasers we have applied continuous wave (cw) Hesbnd Cd laser at wavelength 441 nm and doubled frequency cw Nd: YAG laser at 532 nm. The spectral energies of these lasers were higher with respect to the energy gaps of the studied crystals. The optical anisotropy was appeared and defected by monitoring of birefringence at probing wavelength of cw Hesbnd Ne laser at λ = 3390 nm. The changes of the laser stimulated near the surface layer morphology was monitored by TEM and AFM methods as well as by the reflected optical second harmonic generation at fundamental wavelength of microsecond CO2 laser generating at wavelength 10600 nm. This technique may open a new approach for the formation of the near the surface nanolayers in chalcogenides using external cw laser illumination.

The Moessbauer effect in binary tin chalcogenides of tin 119

International Nuclear Information System (INIS)

Ortalli, I.; Fano, V.

1975-01-01

The values of the isomer shift, quadrupole splitting, Moessbauer coefficient, Debye temperature for the tin chalcogenides SnS. SnSe, SnTe are tabulated for the temperatures 80 and 300 K. Temperature dependences of the Moessbauer coefficient and of the effective Debye temperature for SnS, SnSe and SnTe in a temperature range of 78 to 300 K are presented. (Z.S.)

Byproduct-free mass production of compound semiconductor nanowires: zinc phosphide

Science.gov (United States)

Chen, Yixi; Polinnaya, Rakesh; Vaddiraju, Sreeram

2018-05-01

A method for the mass production of compound semiconductor nanowires that involves the direct reaction of component elements in a chemical vapor deposition chamber (CVD) is presented. This method results in nanowires, without the associated production of any other byproducts such as nanoparticles or three-dimensional (3D) bulk crystals. Furthermore, no unreacted reactants remain mixed with the nanowire product in this method. This byproduct-free nanowire production thus circumvents the need to tediously purify and collect nanowires from a mixture of products/reactants after their synthesis. Demonstration made using zinc phosphide (Zn3P2) material system as an example indicated that the direct reaction of zinc microparticles with phosphorus supplied via the vapor phase results in the production of gram quantities of nanowires. To enhance thermal transport and achieve the complete reaction of zinc microparticles, while simultaneously ensuring that the microparticles do not agglomerate into macroscale zinc particles and partly remain unreacted (owing to diffusion limitations), pellets composed of mixtures of zinc and a sacrificial salt, NH4Cl, were employed as the starting material. The sublimation by decomposition of NH4Cl in the early stages of the reaction leaves a highly porous pellet of zinc composed of only zinc microparticles, which allows for inward diffusion of phosphorus/outward diffusion of zinc and the complete conversion of zinc into Zn3P2 nanowires. NH4Cl also aids in removal of any native oxide layer present on the zinc microparticles that may prevent their reaction with phosphorus. This method may be used to mass produce many other nanowires in a byproduct-free manner, besides Zn3P2.

Generation and Applications of High Average Power Mid-IR Supercontinuum in Chalcogenide Fibers

OpenAIRE

Petersen, Christian Rosenberg

2016-01-01

Mid-infrared supercontinuum with up to 54.8 mW average power, and maximum bandwidth of 1.77-8.66 μm is demonstrated as a result of pumping tapered chalcogenide photonic crystal fibers with a MHz parametric source at 4 μm

Efficient telecom to visible wavelength conversion in doubly resonant gallium phosphide microdisks

Science.gov (United States)

Lake, David P.; Mitchell, Matthew; Jayakumar, Harishankar; dos Santos, Laís Fujii; Curic, Davor; Barclay, Paul E.

2016-01-01

Resonant second harmonic generation between 1550 nm and 775 nm with normalized outside efficiency > 3.8 × 10 - 4 mW - 1 is demonstrated in a gallium phosphide microdisk supporting high-Q modes at visible ( Q ˜ 10 4 ) and infrared ( Q ˜ 10 5 ) wavelengths. The double resonance condition is satisfied for a specific pump power through intracavity photothermal temperature tuning using ˜ 360 μ W of 1550 nm light input to a fiber taper and coupled to a microdisk resonance. Power dependent efficiency consistent with a simple model for thermal tuning of the double resonance condition is observed.

Optical Properties of Strained Wurtzite Gallium Phosphide Nanowires

KAUST Repository

Greil, J.

2016-06-08

Wurtzite gallium phosphide (WZ GaP) has been predicted to exhibit a direct bandgap in the green spectral range. Optical transitions, however, are only weakly allowed by the symmetry of the bands. While efficient luminescence has been experimentally shown, the nature of the transitions is not yet clear. Here we apply tensile strain up to 6% and investigate the evolution of the photoluminescence (PL) spectrum of WZ GaP nanowires (NWs). The pressure and polarization dependence of the emission together with a theoretical analysis of strain effects is employed to establish the nature and symmetry of the transitions. We identify the emission lines to be related to localized states with significant admixture of Γ7c symmetry and not exclusively related to the Γ8c conduction band minimum (CBM). The results emphasize the importance of strongly bound state-related emission in the pseudodirect semiconductor WZ GaP and contribute significantly to the understanding of the optoelectronic properties of this novel material.

Effects of P/Ni ratio and Ni content on performance of γ-Al_2O_3-supported nickel phosphides for deoxygenation of methyl laurate to hydrocarbons

International Nuclear Information System (INIS)

Zhang, Zhena; Tang, Mingxiao; Chen, Jixiang

2016-01-01

Graphical abstract: - Highlights: • The formation of AlPO_4 was unfavorable for that of nickel phosphides. • The phase compositions of nickel phosphide depended on the amount of reduced P. • Catalytic activity was determined by surface Ni site density and catalyst acidity. • HDO pathway was promoted by increasing P/Ni ratio and Ni content. • Nickel phosphide gave much higher carbon yield and lower H_2 consumption than Ni. - Abstract: γ-Al_2O_3-supported nickel phosphides (mNi-Pn) were prepared by the TPR method and tested for the deoxygenation of methyl laurate to hydrocarbons. The effects of the P/Ni ratio (n = 1.0–2.5) and Ni content (m = 5–15 wt.%) in the precursors on their structure and performance were investigated. Ni/γ-Al_2O_3 was also studied for comparison. It was found that the formation of AlPO_4 in the precursor inhibited the reduction of phosphate and so the formation of nickel phosphides. With increasing the P/Ni ratio and Ni content, the Ni, Ni_3P, Ni_1_2P_5 and Ni_2P phases orderly formed, accompanying with the increases of their particle size and the amount of weak acid sites (mainly due to P-OH group), while the CO uptake and the amount of medium strong acid sites (mainly related to Ni sites) reached maximum on 10%Ni-P1.5. In the deoxygenation reaction, compared with Ni/γ-Al_2O_3, the mNi-Pn catalysts showed much lower activities for decarbonylation, C−C hydrogenolysis and methanation due to the ligand and ensemble effects of P. The conversion and the selectivity to n-C11 and n-C12 hydrocarbons achieved maximum on 10%Ni-P 2.0 for the 10%Ni-Pn catalysts and on 8%Ni-P2.0 for the mNi-P2.0 catalysts, while the turnover frequency (TOF) of methyl laurate mainly increased with the P/Ni ratio and Ni content. We propose that TOF was influenced by the nickel phosphide phases, the catalyst acidity and the particle size as well as the synergetic effect between the Ni site and acid site. Again, the hydrodeoxygenation pathway of methyl

Thermoelectric properties of boron and boron phosphide CVD wafers

Energy Technology Data Exchange (ETDEWEB)

Kumashiro, Y.; Yokoyama, T.; Sato, A.; Ando, Y. [Yokohama National Univ. (Japan)

1997-10-01

Electrical and thermal conductivities and thermoelectric power of p-type boron and n-type boron phosphide wafers with amorphous and polycrystalline structures were measured up to high temperatures. The electrical conductivity of amorphous boron wafers is compatible to that of polycrystals at high temperatures and obeys Mott`s T{sup -{1/4}} rule. The thermoelectric power of polycrystalline boron decreases with increasing temperature, while that of amorphous boron is almost constant in a wide temperature range. The weak temperature dependence of the thermal conductivity of BP polycrystalline wafers reflects phonon scattering by grain boundaries. Thermal conductivity of an amorphous boron wafer is almost constant in a wide temperature range, showing a characteristic of a glass. The figure of merit of polycrystalline BP wafers is 10{sup -7}/K at high temperatures while that of amorphous boron is 10{sup -5}/K.

Room temperature oxidative intercalation with chalcogen hydrides: Two-step method for the formation of alkali-metal chalcogenide arrays within layered perovskites

International Nuclear Information System (INIS)

Ranmohotti, K.G. Sanjaya; Montasserasadi, M. Dariush; Choi, Jonglak; Yao, Yuan; Mohanty, Debasish; Josepha, Elisha A.; Adireddy, Shiva; Caruntu, Gabriel; Wiley, John B.

2012-01-01

Highlights: ► Topochemical reactions involving intercalation allow construction of metal chalcogenide arrays within perovskite hosts. ► Gaseous chalcogen hydrides serve as effect reactants for intercalation of sulfur and selenium. ► New compounds prepared by a two-step intercalation strategy are presented. -- Abstract: A two-step topochemical reaction strategy utilizing oxidative intercalation with gaseous chalcogen hydrides is presented. Initially, the Dion-Jacobson-type layered perovskite, RbLaNb 2 O 7 , is intercalated reductively with rubidium metal to make the Ruddlesden-Popper-type layered perovskite, Rb 2 LaNb 2 O 7 . This compound is then reacted at room-temperature with in situ generated H 2 S gas to create Rb-S layers within the perovskite host. Rietveld refinement of X-ray powder diffraction data (tetragonal, a = 3.8998(2) Å, c = 15.256(1) Å; space group P4/mmm) shows the compound to be isostructural with (Rb 2 Cl)LaNb 2 O 7 where the sulfide resides on a cubic interlayer site surrounded by rubidium ions. The mass increase seen on sulfur intercalation and the refined S site occupation factor (∼0.8) of the product indicate a higher sulfur content than expected for S 2− alone. This combined with the Raman studies, which show evidence for an H-S stretch, indicate that a significant fraction of the intercalated sulfide exists as hydrogen sulfide ion. Intercalation reactions with H 2 Se (g) were also carried out and appear to produce an isostructural selenide compound. The utilization of such gaseous hydride reagents could significantly expand multistep topochemistry to a larger number of intercalants.

Topotactic Conversion of Copper(I) Phosphide Nanowires for Sensitive Electrochemical Detection of H2O2 Release from Living Cells.

Science.gov (United States)

Li, Zhenzhen; Xin, Yanmei; Wu, Wenlong; Fu, Baihe; Zhang, Zhonghai

2016-08-02

In this work, we clearly demonstrate for the first time the use of transition-metal phosphides to set up a new cathodic analysis platform for sensitive and selective electrochemical nonenzymatic detection of H2O2. With the help of a facile topotactic conversion method, the noble metal-free electrocatalyst of copper(I) phosphide nanowires on three-dimensional porous copper foam (Cu3P NWs/CF) is fabricated with electrochemical anodized Cu(OH)2 NWs as precursor. The Cu3P NWs/CF-based sensor presents excellent electrocatalytic activity for H2O2 reduction with a detection limit of 2 nM, the lowest detection limit achieved by noble-metal free electrocatalyst, which guarantees the possibility of sensitive and reliable detection of H2O2 release from living tumorigenic cells, thus showing the potential application as a sensitive cancer cell detection probe.

Synthesis, crystal structure and electrical properties of the tetrahedral quaternary chalcogenides CuM{sub 2}InTe{sub 4} (M=Zn, Cd)

Energy Technology Data Exchange (ETDEWEB)

Nolas, George S., E-mail: gnolas@usf.edu [Department of Physics, University of South Florida, Tampa, FL 33620 (United States); Hassan, M. Shafiq; Dong, Yongkwan [Department of Physics, University of South Florida, Tampa, FL 33620 (United States); Martin, Joshua [Material Measurement Laboratory, National Institute of Standards and Technology (NIST), Gaithersburg, MD 20899 (United States)

2016-10-15

Quaternary chalcogenides form a large class of materials that continue to be of interest for energy-related applications. Certain compositions have recently been identified as possessing good thermoelectric properties however these materials typically have the kesterite structure type with limited variation in composition. In this study we report on the structural, optical and electrical properties of the quaternary chalcogenides CuZn{sub 2}InTe{sub 4} and CuCd{sub 2}InTe{sub 4} which crystallize in the modified zinc-blende crystal structure, and compare their properties with that of CuZn{sub 2}InSe{sub 4}. These p-type semiconductors have direct band gaps of about 1 eV resulting in relatively high Seebeck coefficient and resistivity values. This work expands on the research into quaternary chalcogenides with new compositions and structure types in order to further the fundamental investigation of multinary chalcogenides for potential thermoelectrics applications. - Graphical abstract: The structural, optical and electrical properties of the quaternary chalcogenides CuZn{sub 2}InTe{sub 4} and CuCd{sub 2}InTe{sub 4} are reported for the first time. The unique crystal structure allows for relatively good electrical transports and therefore potential for thermoelectric applications. - Highlights: • The physical properties of CuZn{sub 2}InTe{sub 4} and CuCd{sub 2}InTe{sub 4} are reported for the first time. • These materials have potential for thermoelectric applications. • Their direct band gaps also suggest potential for photovoltaics applications.

Short and medium range structures of 80GeSe2–20Ga2Se3 chalcogenide glasses

Science.gov (United States)

Petracovschi, Elena; Calvez, Laurent; Cormier, Laurent; Le Coq, David; Du, Jincheng

2018-05-01

The short and medium range structures of 80GeSe2–20Ga2Se3 (or Ge23.5Ga11.8Se64.7) chalcogenide glasses have been studied by combining ab initio molecular dynamics (AIMD) simulations and experimental neutron diffraction studies. The structure factor and total correlation function were calculated from glass structures generated from AIMD simulations and compared with neutron diffraction experiments showing reasonable agreement. The atomic structures of ternary chalcogenide glasses were analyzed in detail, and it was found that gallium atoms are four-fold coordinated by selenium (Se) and form [GaSe4] tetrahedra. Germanium atoms on average also have four-fold coordination, among which Se is 3.5 with the remaining being Ge–Ge homo-nuclear bonds. Ga and Ge tetrahedra link together mainly through corner-sharing and some edge-sharing of Se. No homo-nuclear bonds were observed among Ga atoms or between Ge and Ga. In addition, Se–Se homo-nuclear bonds and Se chains with various lengths were observed. A small fraction of Se atom triclusters that bond to three cations of Ge and Ga were also observed, confirming earlier proposals from 77Se solid state nuclear magnetic resonance studies. Furthermore, the electronic structures of ternary chalcogenide glasses were studied in terms of atomic charge and electronic density of states in order to gain insights into the chemical bonding and electronic properties, as well as to provide an explanation of the observed atomic structures in these ternary chalcogenide glasses.

Interaction between titanium and sulfuric acid in the electrodeposition of chalcogenide semiconductors

International Nuclear Information System (INIS)

Ortega, J.

1992-01-01

Some chalcogenide electrodeposition problems in the cathodic potential range from -0.30 V to-0.65 V vs SCE may be related to the Titanium corrosion-passivation process in aqueous solutions of sulfuric acid. This feature was discovered accidentally when it was attempted to electrodeposit Cd-Hg-Te compounds from a ternary plating bath; an anodic current of about 10 m/cm 2 was produced in the Titanium cathode at -0.50 V vs SCE, while at -0.40 and -0.60 V vs SCE the current was cathodic. In order to explain this feature, a first study has been carried out to determine the influence of the temperature and sulfuric acid concentration on the passivation current density, passivation potential and Flade potential for passivation. From Arrhenius plots of the passivation currents an apparent activation energy of 63.8 kJ/mole for Titanium passivation in sulfuric acid at -0.50 V vs SCE was obtained. The electrochemical stability of passivated Titanium was explained by assuming that the oxide film formed exhibits n-type semiconducting character, since passivation data was in good agreement with interfacial energetics for n-TiO 2 in aqueous solutions of sulfuric acid.(Author)

Structural and electronic properties of high pressure phases of lead chalcogenides

Science.gov (United States)

Petersen, John; Scolfaro, Luisa; Myers, Thomas

2012-10-01

Lead chalcogenides, most notably PbTe and PbSe, have become an active area of research due to their thermoelectric properties. The high figure of merit (ZT) of these materials has brought much attention to them, due to their ability to convert waste heat into electricity. Variation in synthesis conditions gives rise to a need for analysis of structural and thermoelectric properties of these materials at different pressures. In addition to the NaCl structure at ambient conditions, lead chalcogenides have a dynamic orthorhombic (Pnma) intermediate phase and a higher pressure yet stable CsCl phase. By altering the lattice constant, we simulate the application of external pressure; this has notable effects on ground state total energy, band gap, and structural phase. Using the General Gradient Approximation (GGA) in Density Functional Theory (DFT), we calculate the phase transition pressures by finding the differences in enthalpy from total energy calculations. For each phase, elastic constants, bulk modulus, shear modulus, Young's modulus, and hardness are calculated, using two different approaches. In addition to structural properties, we analyze the band structure and density of states at varying pressures, paying special note to thermoelectric implications.

Efficiency simulations of thin film chalcogenide photovoltaic cells for different indoor lighting conditions

International Nuclear Information System (INIS)

Minnaert, B.; Veelaert, P.

2011-01-01

Photovoltaic (PV) energy is an efficient natural energy source for outdoor applications. However, for indoor applications, the efficiency of PV cells is much lower. Typically, the light intensity under artificial lighting conditions is less than 10 W/m 2 as compared to 100-1000 W/m 2 under outdoor conditions. Moreover, the spectrum is different from the outdoor solar spectrum. In this context, the question arises whether thin film chalcogenide photovoltaic cells are suitable for indoor use. This paper contributes to answering that question by comparing the power output of different thin film chalcogenide solar cells with the classical crystalline silicon cell as reference. The comparisons are done by efficiency simulation based on the quantum efficiencies of the solar cells and the light spectra of typical artificial light sources i.e. an LED lamp, a 'warm' and a 'cool' fluorescent tube and a common incandescent and halogen lamp, which are compared to the outdoor AM 1.5 spectrum as reference.

Fabrication challenges for indium phosphide microsystems

International Nuclear Information System (INIS)

Siwak, N P; Fan, X Z; Ghodssi, R

2015-01-01

From the inception of III–V microsystems, monolithically integrated device designs have been the motivating drive for this field, bringing together the utility of single-chip microsystems and conventional fabrication techniques. Indium phosphide (InP) has a particular advantage of having a direct bandgap within the low loss telecommunication wavelength (1550 nm) range, able to support passive waveguiding and optical amplification, detection, and generation depending on the exact alloy of In, P, As, Ga, or Al materials. Utilizing epitaxy, one can envision the growth of a substrate that contains all of the components needed to establish a single-chip optical microsystem, containing detectors, sources, waveguides, and mechanical structures. A monolithic InP MEMS system has, to our knowledge, yet to be realized due to the significant difficulties encountered when fabricating the integrated devices. In this paper we present our own research and consolidate findings from other research groups across the world to give deeper insight into the practical aspects of InP monolithic microsystem development: epitaxial growth of InP-based alloys, etching techniques, common MEMS structures realized in InP, and future applications. We pay special attention to shedding light on considerations that must be taken when designing and fabricating a monolithic InP MEMS device. (topical review)

Radiation-induced defects formation in Bi-containing vitreous chalcogenides

International Nuclear Information System (INIS)

Shpotyuk, O.; Vakiv, M.; Balitska, V.; Kovalskiy, A.

1997-01-01

Processes of formation and annihilation of coordination defects in As 2 Se 3 Bi y and (As 2 Se 3 )(Bi 2 Se 3 ) y amorphous chalcogenide semiconductors induced by influence of Co 60 gamma-irradiation are investigated by photoelectric spectroscopy method. It is obtained that radiation-induced changes of photoelectrical properties on bioconcentration of As 2 Se 3 Bi y glasses are characterized by anomalous concentration dependence. The nature of this effect is associated with diamagnetic coordination defects formation. (author). 19 refs, 3 figs

Investigations on the parent compounds of Fe-chalcogenide superconductors

International Nuclear Information System (INIS)

Koz, Cevriye

2015-01-01

This work is focused on the parent compounds of the Fe-chalcogenide superconductors. For this purpose poly- and single-crystalline forms of tetragonal β-Fe x Se, Fe 1+y Te, Fe 1+y Te 1-x Se x and Fe (1+y)-x M x Te (M = Ni, Co) have been prepared. Second focal points of this study are the low-temperature structural phase transitions and physical property changes in tetragonal Fe 1+y Te which are induced by composition, external pressure, and cationic substitution.

Neutron diffraction study on the medium and short-range order of ternary chalcogenide glasses

Czech Academy of Sciences Publication Activity Database

Neov, S.; Gerasimova, I.; Skordeva, E.; Arsova, D.; Pamukchieva, V.; Mikula, Pavol; Lukáš, Petr; Sonntag, R.

1999-01-01

Roč. 34, - (1999), s. 3669-3676 ISSN 0022-2461 R&D Projects: GA ČR GV202/97/K038 Keywords : neutron diffraction * short-range order * chalcogenide glasses Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 0.786, year: 1999

Multi-layered Chalcogenides with potential for magnetism and superconductivity

Energy Technology Data Exchange (ETDEWEB)

Li, Li, E-mail: lil2@ornl.gov [Materials Science & Technology Division, Oak Ridge National Laboratory, Oak Ridge, TN 37831 (United States); Parker, David S. [Materials Science & Technology Division, Oak Ridge National Laboratory, Oak Ridge, TN 37831 (United States); Cruz, Clarina R. dela [Quantum Condensed Matter Division, Oak Ridge National Laboratory, Oak Ridge, TN 37831 (United States); Sefat, Athena S., E-mail: sefata@ornl.gov [Materials Science & Technology Division, Oak Ridge National Laboratory, Oak Ridge, TN 37831 (United States)

2016-12-15

Highlights: • A comprehensive study on multi-layered thallium copper chalcogenides TlCu{sub 2n}Ch{sub n+1}. • All the TlCu{sub 2n}Ch{sub n+1} exhibit metallic behaviors with no long-range magnetism. • Calculations suggest a lack of Fermi-level spectral weight for magnetic instability. • Our results suggest a likelihood of magnetism for multiple structural layers with Fe. - Abstract: Layered thallium copper chalcogenides can form single, double, or triple layers of Cu–Ch separated by Tl sheets. Here we report on the preparation and properties of Tl-based materials of TlCu{sub 2}Se{sub 2}, TlCu{sub 4}S{sub 3}, TlCu{sub 4}Se{sub 3} and TlCu{sub 6}S{sub 4}. Having no long-range magnetism for these materials is quite surprising considering the possibilities of inter- and intra-layer exchange interactions through Cu 3d, and we measure by magnetic susceptibility and confirm by neutron diffraction. First principles density-functional theory calculations for both the single-layer TlCu{sub 2}Se{sub 2} (isostructural to the ‘122’ iron-based superconductors) and the double-layer TlCu{sub 4}Se{sub 3} suggest a lack of Fermi-level spectral weight that is needed to drive a magnetic or superconducting instability. However, for multiple structural layers with Fe, there is much greater likelihood for magnetism and superconductivity.

Pinning down high-performance Cu-chalcogenides as thin-film solar cell absorbers: A successive screening approach

Energy Technology Data Exchange (ETDEWEB)

Zhang, Yubo; Zhang, Wenqing, E-mail: wqzhang@mail.sic.ac.cn, E-mail: pzhang3@buffalo.edu [Materials Genome Institute and Department of Physics, Shanghai University, Shanghai 200444 (China); State Key Laboratory of High Performance Ceramics and Superfine Microstructures, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050 (China); Wang, Youwei; Zhang, Jiawei; Xi, Lili [State Key Laboratory of High Performance Ceramics and Superfine Microstructures, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050 (China); Zhang, Peihong, E-mail: wqzhang@mail.sic.ac.cn, E-mail: pzhang3@buffalo.edu [Materials Genome Institute and Department of Physics, Shanghai University, Shanghai 200444 (China); Department of Physics, University at Buffalo, SUNY, Buffalo, New York 14260 (United States)

2016-05-21

Photovoltaic performances of Cu-chalcogenides solar cells are strongly correlated with the absorber fundamental properties such as optimal bandgap, desired band alignment with window material, and high photon absorption ability. According to these criteria, we carry out a successive screening for 90 Cu-chalcogenides using efficient theoretical approaches. Besides the well-recognized CuInSe{sub 2} and Cu{sub 2}ZnSnSe{sub 4} materials, several novel candidates are identified to have optimal bandgaps of around 1.0–1.5 eV, spike-like band alignments with CdS window layer, sharp photon absorption edges, and high absorption coefficients. These new systems have great potential to be superior absorbers for photovolatic applications if their carrrier transport and defect properties are properly optimized.

Anionic Redox Chemistry in Polysulfide Electrode Materials for Rechargeable Batteries.

Science.gov (United States)

Grayfer, Ekaterina D; Pazhetnov, Egor M; Kozlova, Mariia N; Artemkina, Sofya B; Fedorov, Vladimir E

2017-12-22

Classical Li-ion battery technology is based on the insertion of lithium ions into cathode materials involving metal (cationic) redox reactions. However, this vision is now being reconsidered, as many new-generation electrode materials with enhanced reversible capacities operate through combined cationic and anionic (non-metal) reversible redox processes or even exclusively through anionic redox transformations. Anionic participation in the redox reactions is observed in materials with more pronounced covalency, which is less typical for oxides, but quite common for phosphides or chalcogenides. In this Concept, we would like to draw the reader's attention to this new idea, especially, as it applies to transition-metal polychalcogenides, such as FeS 2 , VS 4 , TiS 3 , NbS 3 , TiS 4 , MoS 3 , etc., in which the key role is played by the (S-S) 2- /2 S 2- redox reaction. The exploration and better understanding of the anion-driven chemistry is important for designing advanced materials for battery and other energy-related applications. © 2017 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

Diffusion of Ag ions under random potential barriers in silver-containing chalcogenide glasses

Czech Academy of Sciences Publication Activity Database

Stehlík, Štěpán; Shimakawa, K.; Wágner, T.; Frumar, M.

2012-01-01

Roč. 45, č. 20 (2012), s. 1-5 ISSN 0022-3727 Institutional research plan: CEZ:AV0Z10100521 Keywords : Ag ion diffusion * chalcogenide glass * Nyquist plots Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 2.528, year: 2012 http://iopscience.iop.org/0022-3727/45/20/205304/

Magnetic and electronic properties of Neptunium chalcogenides from GGA + U + SOC and DFT investigations

Energy Technology Data Exchange (ETDEWEB)

Khan, Wilayat [New Technologies – Research Center, University of West Bohemia, Univerzitni 8, 306 14 Pilsen (Czech Republic); Goumri-Said, Souraya, E-mail: sosaid@alfaisal.edu [College of Science, Physics Department, Alfaisal University, Riyadh 11533 (Saudi Arabia)

2017-06-15

Highlights: • Electronic and magnetic properties of Neptunium chalcogenides were explored theoretically using DFT approach. • Spin orbit coupling and GGA + U approach described successfully the f–f coupling. • Np{sub 2}X{sub 5} ate metallic with high magnetic character due to the Neptunium. • Fermi surfaces of Np{sub 2}Te{sub 5} have shown a greater electrical conductivity compared to Np{sub 2}Se{sub 5} and Np{sub 2}S{sub 5}. - Abstract: First-principles calculations techniques were employed to explore the structural, electronic and magnetic properties of Neptunium chalcogenides (Np{sub 2}X{sub 5}, X = S, Se and Te). No experimental or theoretical studies of their physical properties have been previously reported in the literature. The presence of highly localized f states has requested the employment of the spin orbit coupling and GGA + U approach in order to describe correctly the f–f coupling. Np{sub 2}X{sub 5} was found metallic with high magnetic character due to the Neptunium presence. Fermi surfaces of Np{sub 2}Te{sub 5} have shown a greater electrical conductivity compared to Np{sub 2}Se{sub 5} and Np{sub 2}S{sub 5}. The magnetic moment was found to be between 13.24 and 13.92μ{sub B}, principally induced by Np f and d-orbitals as well as the spin-polarization of the chalcogenes (Te, Se, S) induced by Np. Neptunium chalcogenides have shown interesting magnetic properties and should be manipulated with precaution due to their radioactive properties.

Positronics of radiation-induced effects in chalcogenide glassy semiconductors

International Nuclear Information System (INIS)

Shpotyuk, O.; Kozyukhin, S. A.; Shpotyuk, M.; Ingram, A.; Szatanik, R.

2015-01-01

Using As 2 S 3 and AsS 2 glasses as an example, the principal possibility of using positron annihilation spectroscopy methods for studying the evolution of the free volume of hollow nanoobjects in chalcogenide glassy semiconductors exposed to radiation is shown. The results obtained by measurements of the positron annihilation lifetime and Doppler broadening of the annihilation line in reverse chronological order are in full agreement with the optical spectroscopy data in the region of the fundamental absorption edge, being adequately described within coordination defect-formation and physical-aging models

Positronics of radiation-induced effects in chalcogenide glassy semiconductors

Energy Technology Data Exchange (ETDEWEB)

Shpotyuk, O. [Scientific Research Company “Carat” (Ukraine); Kozyukhin, S. A., E-mail: sergkoz@igic.ras.ru [Russian Academy of Sciences, Kurnakov Institute of General and Inorganic Chemistry (Russian Federation); Shpotyuk, M. [Scientific Research Company “Carat” (Ukraine); Ingram, A. [Opole Technical University (Poland); Szatanik, R. [Opole University (Poland)

2015-03-15

Using As{sub 2}S{sub 3} and AsS{sub 2} glasses as an example, the principal possibility of using positron annihilation spectroscopy methods for studying the evolution of the free volume of hollow nanoobjects in chalcogenide glassy semiconductors exposed to radiation is shown. The results obtained by measurements of the positron annihilation lifetime and Doppler broadening of the annihilation line in reverse chronological order are in full agreement with the optical spectroscopy data in the region of the fundamental absorption edge, being adequately described within coordination defect-formation and physical-aging models.

A Self-Templating Scheme for the Synthesis of Nanostructured Transition Metal Chalcogenide Electrodes for Capacitive Energy Storage

KAUST Repository

Xia, Chuan

2015-06-11

Due to their unique structural features including well-defined interior voids, low density, low coefficients of thermal expansion, large surface area and surface permeability, hollow micro/nanostructured transition metal sulfides with high conductivity have been investigated as new class of electrode materials for pseudocapacitor applications. Herein, we report a novel self-templating strategy to fabricate well-defined single and double-shell NiCo2S4 hollow spheres, as a promising electrode material for pseudocapacitors. The surfaces of the NiCo2S4 hollow spheres consist of self-assembled 2D mesoporous nanosheets. This unique morphology results in a high specific capacitance (1257 F g-1 at 2 A g-1), remarkable rate performance (76.4% retention of initial capacitance from 2 A g-1 to 60 A g-1) and exceptional reversibility with a cycling efficiency of 93.8% and 87% after 10,000 and 20,000 cycles, respectively, at a high current density of 10 A g-1. The cycling stability of our ternary chalcogenides is comparable to carbonaceous electrode materials, but with much higher specific capacitance (higher than any previously reported ternary chalcogenide), suggesting that these unique chalcogenide structures have potential application in next-generation commercial pseudocapacitors.

The effect of oxygen impurity on the electronic and optical properties of calcium, strontium and barium chalcogenide compounds

International Nuclear Information System (INIS)

Dadsetani, M.; Beiranvand, R.

2010-01-01

Electronic and optical properties of calcium, strontium and barium chalcogenide compounds in NaCl structure are studied using the band structure results obtained through the full potential linearized augmented palne wave method. Different linear relationships are observed between theoretical band gap and 1/a 2 (where a is lattice constant) for calcium, strontium and barium chalcogenide compounds with and without oxygen, respectively. An abnormal behavior of electronic and optical properties are found for compounds containing oxygen. These effects are ascribed to the special properties of Ca-O, Sr-O and Ba-O bonds, which are different from chemical bonds between Ca, Sr and Ba and other chalcogen atoms.

Effects of P/Ni ratio and Ni content on performance of γ-Al{sub 2}O{sub 3}-supported nickel phosphides for deoxygenation of methyl laurate to hydrocarbons

Energy Technology Data Exchange (ETDEWEB)

Zhang, Zhena; Tang, Mingxiao; Chen, Jixiang, E-mail: jxchen@tju.edu.cn

2016-01-01

Graphical abstract: - Highlights: • The formation of AlPO{sub 4} was unfavorable for that of nickel phosphides. • The phase compositions of nickel phosphide depended on the amount of reduced P. • Catalytic activity was determined by surface Ni site density and catalyst acidity. • HDO pathway was promoted by increasing P/Ni ratio and Ni content. • Nickel phosphide gave much higher carbon yield and lower H{sub 2} consumption than Ni. - Abstract: γ-Al{sub 2}O{sub 3}-supported nickel phosphides (mNi-Pn) were prepared by the TPR method and tested for the deoxygenation of methyl laurate to hydrocarbons. The effects of the P/Ni ratio (n = 1.0–2.5) and Ni content (m = 5–15 wt.%) in the precursors on their structure and performance were investigated. Ni/γ-Al{sub 2}O{sub 3} was also studied for comparison. It was found that the formation of AlPO{sub 4} in the precursor inhibited the reduction of phosphate and so the formation of nickel phosphides. With increasing the P/Ni ratio and Ni content, the Ni, Ni{sub 3}P, Ni{sub 12}P{sub 5} and Ni{sub 2}P phases orderly formed, accompanying with the increases of their particle size and the amount of weak acid sites (mainly due to P-OH group), while the CO uptake and the amount of medium strong acid sites (mainly related to Ni sites) reached maximum on 10%Ni-P1.5. In the deoxygenation reaction, compared with Ni/γ-Al{sub 2}O{sub 3}, the mNi-Pn catalysts showed much lower activities for decarbonylation, C−C hydrogenolysis and methanation due to the ligand and ensemble effects of P. The conversion and the selectivity to n-C11 and n-C12 hydrocarbons achieved maximum on 10%Ni-P 2.0 for the 10%Ni-Pn catalysts and on 8%Ni-P2.0 for the mNi-P2.0 catalysts, while the turnover frequency (TOF) of methyl laurate mainly increased with the P/Ni ratio and Ni content. We propose that TOF was influenced by the nickel phosphide phases, the catalyst acidity and the particle size as well as the synergetic effect between the Ni site and

Spray pyrolysis synthesis of γ-Al_2O_3 supported metal and metal phosphide catalysts and their activity in the hydrodeoxygenation of a bio-oil model compound

International Nuclear Information System (INIS)

Ly, Hoang Vu; Im, Kyungmin; Go, Youngchae; Galiwango, Emmanuel; Kim, Seung-Soo; Kim, Jinsoo; Choi, Jae Hyung; Woo, Hee Chul

2016-01-01

Highlights: • Spherical γ-Al_2O_3 supported metal and metal phosphide catalysts were synthesized by spray pyrolysis method. • Hydrodeoxygenation (HDO) of 2-furyl methyl ketone (FMK) was conducted using metal/metal phosphide catalysts. • FMK was converted into 2-allyl furan and methyl cyclohexane. • The highest FMK conversion of 83% was achieved over 10 wt% Ni/γ-Al_2O_3 catalysts at reaction temperature of 400 °C. - Abstract: In this study, spherical γ-Al_2O_3 supported metal and metal phosphide (Ni, Co, Ni_2P and CoP) catalysts were successfully prepared by combining sol-gel and spray pyrolysis methods. First boehmite sol was prepared based on the Yoldas process and then the corresponding metal salts were added to the sol at the desired concentration, followed by spray pyrolysis of the mixed solution. As the well-mixed solution was transformed to spherical γ-Al_2O_3 supported metal and metal phosphide catalysts during spray pyrolysis process, the metal species were uniformly distributed in the mesoporous γ-Al_2O_3 supports. The product catalysts were investigated under different conditions for hydrodeoxygenation of bio-oil model compound, 2-furyl methyl ketone (FMK), which is the main component of the bio-oil product from pyrolysis of Saccharina japonica. Among the investigated catalysts, the 10 wt% Ni/γ-Al_2O_3 catalyst after calcination at 800 °C showed the highest FMK conversion of 83.02% at the reaction temperature of 400 °C. The gas and liquid products were analyzed by gas chromatography (GC) with TCD/FID detectors and GC–MS, respectively, to determine the product compositions.

Room temperature oxidative intercalation with chalcogen hydrides: Two-step method for the formation of alkali-metal chalcogenide arrays within layered perovskites

Energy Technology Data Exchange (ETDEWEB)

Ranmohotti, K.G. Sanjaya; Montasserasadi, M. Dariush; Choi, Jonglak; Yao, Yuan; Mohanty, Debasish; Josepha, Elisha A.; Adireddy, Shiva; Caruntu, Gabriel [Department of Chemistry and the Advanced Materials Research Institute, University of New Orleans, New Orleans, LA 70148-2820 (United States); Wiley, John B., E-mail: jwiley@uno.edu [Department of Chemistry and the Advanced Materials Research Institute, University of New Orleans, New Orleans, LA 70148-2820 (United States)

2012-06-15

Highlights: ► Topochemical reactions involving intercalation allow construction of metal chalcogenide arrays within perovskite hosts. ► Gaseous chalcogen hydrides serve as effect reactants for intercalation of sulfur and selenium. ► New compounds prepared by a two-step intercalation strategy are presented. -- Abstract: A two-step topochemical reaction strategy utilizing oxidative intercalation with gaseous chalcogen hydrides is presented. Initially, the Dion-Jacobson-type layered perovskite, RbLaNb{sub 2}O{sub 7}, is intercalated reductively with rubidium metal to make the Ruddlesden-Popper-type layered perovskite, Rb{sub 2}LaNb{sub 2}O{sub 7}. This compound is then reacted at room-temperature with in situ generated H{sub 2}S gas to create Rb-S layers within the perovskite host. Rietveld refinement of X-ray powder diffraction data (tetragonal, a = 3.8998(2) Å, c = 15.256(1) Å; space group P4/mmm) shows the compound to be isostructural with (Rb{sub 2}Cl)LaNb{sub 2}O{sub 7} where the sulfide resides on a cubic interlayer site surrounded by rubidium ions. The mass increase seen on sulfur intercalation and the refined S site occupation factor (∼0.8) of the product indicate a higher sulfur content than expected for S{sup 2−} alone. This combined with the Raman studies, which show evidence for an H-S stretch, indicate that a significant fraction of the intercalated sulfide exists as hydrogen sulfide ion. Intercalation reactions with H{sub 2}Se{sub (g)} were also carried out and appear to produce an isostructural selenide compound. The utilization of such gaseous hydride reagents could significantly expand multistep topochemistry to a larger number of intercalants.

A new method to study complex materials in solid state chemistry: application to chalcogenide materials

International Nuclear Information System (INIS)

Lippens, P.E.; Olivier-Fourcade, J.; Jumas, J.C.

1998-01-01

We show that a combined application of Moessbauer spectroscopy and other experimental tools such as X-ray photoelectron spectroscopy, X-ray absorption spectroscopy and nuclear magnetic resonance provides a coherent picture of the local electronic structure in chalcogenide materials. In order to develop this idea we propose an analysis of the Sn, Sb and Te local electronic structures for three different systems of materials. The first example concerns the In-Sn-S system. We show that Li insertion in In 16 Sn 4 S 32 leads to changes of the Sn oxidation states from Sn(IV) to Sn(II). The second example concerns materials of the Tl-Sb-S system. We show that variations of the 121 Sb Moessbauer isomer shift and surface of the first peak of the X-ray absorption spectra at the Sb L III edge can be linearly correlated because of the main influence of the Sb 5s electrons. This is explained by changes in the local environment of the Sb atoms. The last example concerns the crystalline phases of the Tl-Sn-Te system. The formal oxidation numbers of the Te atoms are determined from 125 Te Moessbauer spectroscopy and X-ray photoelectron spectroscopy. They are related to the different types of bonds involving the Te atoms in the Tl-Sn-Te compounds

The electronic band structures of gadolinium chalcogenides: a first-principles prediction for neutron detecting.

Science.gov (United States)

Li, Kexue; Liu, Lei; Yu, Peter Y; Chen, Xiaobo; Shen, D Z

2016-05-11

By converting the energy of nuclear radiation to excited electrons and holes, semiconductor detectors have provided a highly efficient way for detecting them, such as photons or charged particles. However, for detecting the radiated neutrons, those conventional semiconductors hardly behave well, as few of them possess enough capability for capturing these neutral particles. While the element Gd has the highest nuclear cross section, here for searching proper neutron-detecting semiconductors, we investigate theoretically the Gd chalcogenides whose electronic band structures have never been characterized clearly. Among them, we identify that γ-phase Gd2Se3 should be the best candidate for neutron detecting since it possesses not only the right bandgap of 1.76 eV for devices working under room temperature but also the desired indirect gap nature for charge carriers surviving longer. We propose further that semiconductor neutron detectors with single-neutron sensitivity can be realized with such a Gd-chalcogenide on the condition that their crystals can be grown with good quality.

Process Development of Gallium Nitride Phosphide Core-Shell Nanowire Array Solar Cell

Science.gov (United States)

Chuang, Chen

Dilute Nitride GaNP is a promising materials for opto-electronic applications due to its band gap tunability. The efficiency of GaNxP1-x /GaNyP1-y core-shell nanowire solar cell (NWSC) is expected to reach as high as 44% by 1% N and 9% N in the core and shell, respectively. By developing such high efficiency NWSCs on silicon substrate, a further reduction of the cost of solar photovoltaic can be further reduced to 61$/MWh, which is competitive to levelized cost of electricity (LCOE) of fossil fuels. Therefore, a suitable NWSC structure and fabrication process need to be developed to achieve this promising NWSC. This thesis is devoted to the study on the development of fabrication process of GaNxP 1-x/GaNyP1-y core-shell Nanowire solar cell. The thesis is divided into two major parts. In the first parts, previously grown GaP/GaNyP1-y core-shell nanowire samples are used to develop the fabrication process of Gallium Nitride Phosphide nanowire solar cell. The design for nanowire arrays, passivation layer, polymeric filler spacer, transparent col- lecting layer and metal contact are discussed and fabricated. The property of these NWSCs are also characterized to point out the future development of Gal- lium Nitride Phosphide NWSC. In the second part, a nano-hole template made by nanosphere lithography is studied for selective area growth of nanowires to improve the structure of core-shell NWSC. The fabrication process of nano-hole templates and the results are presented. To have a consistent features of nano-hole tem- plate, the Taguchi Method is used to optimize the fabrication process of nano-hole templates.

A library of atomically thin metal chalcogenides.

Science.gov (United States)

Zhou, Jiadong; Lin, Junhao; Huang, Xiangwei; Zhou, Yao; Chen, Yu; Xia, Juan; Wang, Hong; Xie, Yu; Yu, Huimei; Lei, Jincheng; Wu, Di; Liu, Fucai; Fu, Qundong; Zeng, Qingsheng; Hsu, Chuang-Han; Yang, Changli; Lu, Li; Yu, Ting; Shen, Zexiang; Lin, Hsin; Yakobson, Boris I; Liu, Qian; Suenaga, Kazu; Liu, Guangtong; Liu, Zheng

2018-04-01

Investigations of two-dimensional transition-metal chalcogenides (TMCs) have recently revealed interesting physical phenomena, including the quantum spin Hall effect 1,2 , valley polarization 3,4 and two-dimensional superconductivity 5 , suggesting potential applications for functional devices 6-10 . However, of the numerous compounds available, only a handful, such as Mo- and W-based TMCs, have been synthesized, typically via sulfurization 11-15 , selenization 16,17 and tellurization 18 of metals and metal compounds. Many TMCs are difficult to produce because of the high melting points of their metal and metal oxide precursors. Molten-salt-assisted methods have been used to produce ceramic powders at relatively low temperature 19 and this approach 20 was recently employed to facilitate the growth of monolayer WS 2 and WSe 2 . Here we demonstrate that molten-salt-assisted chemical vapour deposition can be broadly applied for the synthesis of a wide variety of two-dimensional (atomically thin) TMCs. We synthesized 47 compounds, including 32 binary compounds (based on the transition metals Ti, Zr, Hf, V, Nb, Ta, Mo, W, Re, Pt, Pd and Fe), 13 alloys (including 11 ternary, one quaternary and one quinary), and two heterostructured compounds. We elaborate how the salt decreases the melting point of the reactants and facilitates the formation of intermediate products, increasing the overall reaction rate. Most of the synthesized materials in our library are useful, as supported by evidence of superconductivity in our monolayer NbSe 2 and MoTe 2 samples 21,22 and of high mobilities in MoS 2 and ReS 2 . Although the quality of some of the materials still requires development, our work opens up opportunities for studying the properties and potential application of a wide variety of two-dimensional TMCs.

Triamidoamine-uranium(IV)-stabilized terminal parent phosphide and phosphinidene complexes

Energy Technology Data Exchange (ETDEWEB)

Gardner, Benedict M.; McMaster, Jonathan; Lewis, William; Blake, Alexander J.; Liddle, Stephen T. [School of Chemistry, University of Nottingham (United Kingdom); Balazs, Gabor; Scheer, Manfred [Institut of Inorganic Chemistry, University of Regensburg (Germany); Tuna, Floriana; McInnes, Eric J.L. [School of Chemistry and Photon Science Institute, University of Manchester (United Kingdom)

2014-04-22

Reaction of [U(Tren{sup TIPS})(THF)][BPh{sub 4}] (1; Tren{sup TIPS}=N{CH_2CH_2NSi(iPr)_3}{sub 3}) with NaPH{sub 2} afforded the novel f-block terminal parent phosphide complex [U(Tren {sup TIPS})(PH{sub 2})] (2; U-P=2.883(2) Aa). Treatment of 2 with one equivalent of KCH{sub 2}C{sub 6}H{sub 5} and two equivalents of benzo-15-crown-5 ether (B15C5) afforded the unprecedented metal-stabilized terminal parent phosphinidene complex [U(Tren{sup TIPS})(PH)][K(B15C5){sub 2}] (4; U=P=2.613(2) Aa). DFT calculations reveal a polarized-covalent U=P bond with a Mayer bond order of 1.92. (copyright 2014 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Characterization and modeling of microstructured chalcogenide fibers for efficient mid-infrared wavelength conversion.

Science.gov (United States)

Xing, Sida; Grassani, Davide; Kharitonov, Svyatoslav; Billat, Adrien; Brès, Camille-Sophie

2016-05-02

We experimentally demonstrate wavelength conversion in the 2 µm region by four-wave mixing in an AsSe and a GeAsSe chalcogenide photonic crystal fibers. A maximum conversion efficiency of -25.4 dB is measured for 112 mW of coupled continuous wave pump in a 27 cm long fiber. We estimate the dispersion parameters and the nonlinear refractive indexes of the chalcogenide PCFs, establishing a good agreement with the values expected from simulations. The different fiber geometries and glass compositions are compared in terms of performance, showing that GeAsSe is a more suited candidate for nonlinear optics at 2 µm. Building from the fitted parameters we then propose a new tapered GeAsSe PCF geometry to tailor the waveguide dispersion and lower the zero dispersion wavelength (ZDW) closer to the 2 µm pump wavelength. Numerical simulations shows that the new design allows both an increased conversion efficiency and bandwidth, and the generation of idler waves further in the mid-IR regions, by tuning the pump wavelength in the vicinity of the fiber ZDW.

Electrical properties and figures of merit for new chalcogenide-based thermoelectric materials

Energy Technology Data Exchange (ETDEWEB)

Schindler, J L; Hogan, T P; Brazis, P W; Kannewurf, C R; Chung, D Y; Kanatzidis, M G

1997-07-01

New Bi-based chalcogenide compounds have been prepared using the polychalcogenide flux technique for crystal growth. These materials exhibit characteristics of good thermoelectric materials. Single crystals of the compound CsBi{sub 4}Te{sub 6} have shown conductivity as high as 2440 S/cm with a p-type thermoelectric power of {approx}+110 {micro}V/K at room temperature. A second compound, {beta}-K{sub 2}Bi{sub 8}Se{sub 13} shows lower conductivity {approx}240 S/cm, but a larger n-type thermopower {approx}{minus}200 {micro}V/K. Thermal transport measurements have been performed on hot-pressed pellets of these materials and the results show comparable or lower thermal conductivities than Bi{sub 2}Te{sub 3}. This improvement may reflect the reduced lattice symmetry of the new chalcogenide thermoelectrics. The thermoelectric figure of merit for CsBi{sub 4}Te{sub 6} reaches ZT {approx} 0.32 at 260 K and for {beta}-K{sub 2}Bi{sub 8}Se{sub 13} ZT {approx} 0.32 at room temperature, indicating that these compounds are viable candidates for thermoelectric refrigeration applications.

Structural phase transition and elastic properties of mercury chalcogenides

Energy Technology Data Exchange (ETDEWEB)

Varshney, Dinesh, E-mail: vdinesh33@rediffmail.com [School of Physics, Vigyan Bhavan, Devi Ahilya University, Khandwa Road Campus, Indore 452001 (India); Shriya, S. [School of Physics, Vigyan Bhavan, Devi Ahilya University, Khandwa Road Campus, Indore 452001 (India); Khenata, R. [Laboratoire de Physique Quantique et de Modelisation Mathematique (LPQ3M), Departement de Technologie, Universite de Mascara, 29000 Mascara (Algeria)

2012-08-15

Pressure induced structural transition and elastic properties of ZnS-type (B3) to NaCl-type (B1) structure in mercury chalcogenides (HgX; X = S, Se and Te) are presented. An effective interionic interaction potential (EIOP) with long-range Coulomb, as well charge transfer interactions, Hafemeister and Flygare type short-range overlap repulsion extended up to the second neighbor ions and van der Waals interactions are considered. Emphasis is on the evaluation of the pressure dependent Poisson's ratio {nu}, the ratio R{sub BT/G} of B (bulk modulus) over G (shear modulus), anisotropy parameter, Shear and Young's modulus, Lame constant, Kleinman parameter, elastic wave velocity and thermodynamical property as Debye temperature. The Poisson's ratio behavior infers that Mercury chalcogenides are brittle in nature. To our knowledge this is the first quantitative theoretical prediction of the pressure dependence of elastic and thermodynamical properties explicitly the ductile (brittle) nature of HgX and still awaits experimental confirmations. Highlights: Black-Right-Pointing-Pointer Vast volume discontinuity in phase diagram infers transition from ZnS to NaCl structure. Black-Right-Pointing-Pointer The shear elastic constant C{sub 44} is nonzero confirms the mechanical stability. Black-Right-Pointing-Pointer Pressure dependence of {theta}{sub D} infers the softening of lattice with increasing pressure. Black-Right-Pointing-Pointer Estimated bulk, shear and tetragonal moduli satisfied elastic stability criteria. Black-Right-Pointing-Pointer In both B3 and B1 phases, C{sub 11} and C{sub 12} increase linearly with pressure.

Structural, optical and electrical properties of cadmium-doped lead chalcogenide (PbSe) thin films

International Nuclear Information System (INIS)

Khan, Shamshad A.; Khan, Zishan H.; El-Sebaii, A.A.; Al-Marzouki, F.M.; Al-Ghamdi, A.A.

2010-01-01

(PbSe) 100-x Cd x thin films of thickness 3000 A with variable concentrations of Cd (x=5, 10, 15 and 20) were prepared by thermal evaporation on glass substrates at room temperature at a base pressure of 10 -6 Torr. The structural, optical and electrical properties of these films were studied. X-ray diffraction patterns were used to determine the crystal structure of the films. Films were of polycrystalline texture over the whole range of study. Optical constants of all films were determined by absorbance and reflection measurements in a wavelength range 400-1200 nm. Analysis of the optical absorption data showed that the rule of direct transitions predominates. The values of the absorption coefficient (α), extinction coefficient (k) and imaginary part of the dielectric constant were found to increase with increasing Cd content in lead chalcogenides while the refractive index (n) and real part of dielectric constant were increased with increasing Cd concentration up to 15% and then they decreased with 20% of Cd content in PbSe. These results were interpreted in terms of the change in concentration of localized states due to the shift in Fermi level. The dc conductivities and activation energies of the films were measured in the temperature range 298-398 K. It was observed that the dc conductivity increases at all temperatures with the increase of Cd content in lead chalcogenide system. The experimental data suggests that the conduction is due to the thermally assisted tunneling of the carriers in the localized states near the band edges. The activation energy and optical band gap were found to decrease with increasing Cd concentration in lead chalcogenide.

Theoretical prediction of sandwiched two-dimensional phosphide binary compound sheets with tunable bandgaps and anisotropic physical properties

Science.gov (United States)

Zhang, C. Y.; Yu, M.

2018-03-01

Atomic layers of GaP and InP binary compounds with unique anisotropic structural, electronic and mechanical properties have been predicted from first-principle molecular dynamics simulations. These new members of the phosphide binary compound family stabilize to a sandwiched two-dimensional (2D) crystalline structure with orthorhombic lattice symmetry and high buckling of 2.14 Å-2.46 Å. Their vibration modes are similar to those of phosphorene with six Raman active modes ranging from ˜80 cm-1 to 400 cm-1. The speeds of sound in their phonon dispersions reflect anisotropy in their elastic constants, which was further confirmed by their strong directional dependence of Young’s moduli and effective nonlinear elastic moduli. They show wide bandgap semiconductor behavior with fundamental bandgaps of 2.89 eV for GaP and 2.59 eV for InP, respectively, even wider than their bulk counterparts. Such bandgaps were found to be tunable under strain. In particular, a direct-indirect bandgap transition was found under certain strains along zigzag or biaxial orientations, reflecting their promising applications in strain-induced bandgap engineering in nanoelectronics and photovoltaics. Feasible pathways to realize these novel 2D phosphide compounds are also proposed.

Radiation-induced defects formation in Bi-containing vitreous chalcogenides

Energy Technology Data Exchange (ETDEWEB)

Shpotyuk, O.; Vakiv, M.; Balitska, V.; Kovalskiy, A. [Institute of Materials, Lvov (Ukraine)

1997-12-01

Processes of formation and annihilation of coordination defects in As{sub 2}Se{sub 3}Bi{sub y} and (As{sub 2}Se{sub 3})(Bi{sub 2}Se{sub 3}){sub y} amorphous chalcogenide semiconductors induced by influence of Co{sup 60} gamma-irradiation are investigated by photoelectric spectroscopy method. It is obtained that radiation-induced changes of photoelectrical properties on bioconcentration of As{sub 2}Se{sub 3}Bi{sub y} glasses are characterized by anomalous concentration dependence. The nature of this effect is associated with diamagnetic coordination defects formation. (author). 19 refs, 3 figs.

Electrochemical kinetics and X-ray absorption spectroscopy investigations of select chalcogenide electrocatalysts for oxygen reduction reaction applications

International Nuclear Information System (INIS)

Ziegelbauer, Joseph M.; Murthi, Vivek S.; O'Laoire, Cormac; Gulla, Andrea F.; Mukerjee, Sanjeev

2008-01-01

Transition metal-based chalcogenide electrocatalysts exhibit a promising level of performance for oxygen reduction reaction applications while offering significant economic benefits over the state of the art Pt/C systems. The most active materials are based on Ru x Se y clusters, but the toxicity of selenium will most likely limit their embrace by the marketplace. Sulfur-based analogues do not suffer from toxicity issues, but suffer from substantially less activity and stability than their selenium brethren. The structure/property relationships that result in these properties are not understood due to ambiguities regarding the specific morphologies of Ru x S y -based chalcogenides. To clarify these properties, an electrochemical kinetics study was interpreted in light of extensive X-ray diffraction, scanning electron microscopy, and in situ X-ray absorption spectroscopy evaluations. The performance characteristics of ternary M x Ru y S z /C (M = Mo, Rh, or Re) chalcogenide electrocatalysts synthesized by the now-standard low-temperature nonaqueous (NA) route are compared to commercially available (De Nora) Rh- and Ru-based systems. Interpretation of performance differences is made in regards to bulk and surface properties of these systems. In particular, the overall trends of the measured activation energies in respect to increasing overpotential and the gross energy values can be explained in regards to these differences

Effect of the Copper on Thermo - Mechanical and Optical Properties of S-Se-Cu Chalcogenide Glasses

Science.gov (United States)

Samudrala, Kavitha; Babu Devarasetty, Suresh

2018-03-01

The S15Se85-xCux (x = 0, 2, 4, 6, 8) chalcogenide glasses are synthesized using melt quenching technique and the effect of Copper on thermal, mechanical and optical properties of chalcogenide glasses are investigated. The glassy natures of the prepared samples were verified by X-ray diffraction and DSC studies. The optical band gap of the samples is estimated and it is observed that optical band gap is decreased with increasing of the copper content and is discussed in terms of cohesive energy and coordination number. The basic thermo-mechanical parameters such as micro-hardness, Volume (Vh) and formation energy (Eh) of micro voids in the glassy network and the modulus of Elasticity (E) are calculated in present glasses. The composition dependence of micro hardness is discussed in terms of heat of atomization energy.

Chalcogenide glass-on-graphene photonics

Science.gov (United States)

Lin, Hongtao; Song, Yi; Huang, Yizhong; Kita, Derek; Deckoff-Jones, Skylar; Wang, Kaiqi; Li, Lan; Li, Junying; Zheng, Hanyu; Luo, Zhengqian; Wang, Haozhe; Novak, Spencer; Yadav, Anupama; Huang, Chung-Che; Shiue, Ren-Jye; Englund, Dirk; Gu, Tian; Hewak, Daniel; Richardson, Kathleen; Kong, Jing; Hu, Juejun

2017-12-01

Two-dimensional (2D) materials are of tremendous interest to integrated photonics, given their singular optical characteristics spanning light emission, modulation, saturable absorption and nonlinear optics. To harness their optical properties, these atomically thin materials are usually attached onto prefabricated devices via a transfer process. Here, we present a new route for 2D material integration with planar photonics. Central to this approach is the use of chalcogenide glass, a multifunctional material that can be directly deposited and patterned on a wide variety of 2D materials and can simultaneously function as the light-guiding medium, a gate dielectric and a passivation layer for 2D materials. Besides achieving improved fabrication yield and throughput compared with the traditional transfer process, our technique also enables unconventional multilayer device geometries optimally designed for enhancing light-matter interactions in the 2D layers. Capitalizing on this facile integration method, we demonstrate a series of high-performance glass-on-graphene devices including ultra-broadband on-chip polarizers, energy-efficient thermo-optic switches, as well as graphene-based mid-infrared waveguide-integrated photodetectors and modulators.

Trends in oxygen reduction and methanol activation on transition metal chalcogenides

DEFF Research Database (Denmark)

Tritsaris, Georgios; Nørskov, Jens Kehlet; Rossmeisl, Jan

2011-01-01

We use density functional theory calculations to study the oxygen reduction reaction and methanol activation on selenium and sulfur-containing transition metal surfaces. With ruthenium selenium as a starting point, we study the effect of the chalcogen on the activity, selectivity and stability...... of the catalyst. Ruthenium surfaces with moderate content of selenium are calculated active for the oxygen reduction reaction, and insensitive to methanol. A significant upper limit for the activity of transition metal chalcogenides is estimated....

Angle-resolved photoemission spectroscopy on iron-chalcogenide superconductors

Energy Technology Data Exchange (ETDEWEB)

Maletz, Janek; Zabolotnyy, Volodymyr; Evtushinsky, Daniil; Thirupathaiah, Setti; Wolter-Giraud, Anja; Harnagea, Luminita; Kordyuk, Alexander; Borisenko, Sergey [IFW Dresden (Germany); Yaresko, Alexander [MPI-FKF, Stuttgart (Germany); Vasiliev, Alexander [Moscow State University (Russian Federation); Chareev, Dimitri [RAS, Chernogolovka (Russian Federation); Rienks, Emile [Helmholtz-Zentrum Berlin (Germany); Buechner, Bernd [IFW Dresden (Germany); TU Dresden (Germany); Shermadini, Zurab; Luetkens, Hubertus; Sedlak, Kamil; Khasanov, Rustem; Amato, Alex; Krzton-Maziopa, Anna; Conder, Kazimierz; Pomjakushina, Ekaterina [Paul Scherrer Institute (Switzerland); Klauss, Hans-Henning [TU Dresden (Germany)

2014-07-01

The electronic structure of the iron chalcogenide superconductors FeSe{sub 1-x} and Rb{sub 0.77}Fe{sub 1.61}Se{sub 2} was investigated by high-resolution angle-resolved photoemission spectroscopy (ARPES). The results were compared to DFT calculations and μSR measurements. Both compounds share ''cigar-shaped'' Fermi surface sheets in their electronic structure, that can be found in almost all iron-pnictide superconductors. These features originate from a strong interplay of two hole- and electron-like bands in the Brillouin zone center, leading to a pronounced singularity in the density of states just below the Fermi level. This facilitates the coupling to a bosonic mode responsible for superconductivity.

Acute aluminium phosphide poisoning, what is new?

Directory of Open Access Journals (Sweden)

Yatendra Singh

2014-01-01

Full Text Available Aluminium phosphide (AlP is a cheap solid fumigant and a highly toxic pesticide that is commonly used for grain preservation. AlP has currently generated interest with increasing number of cases in the past four decades because of its increased use for agricultural and nonagricultural purposes, and also its easy availability in the markets has led to its increased misuse to commit suicide. Ingestion is usually suicidal in intent, uncommonly accidental and rarely homicidal. The poison affects all systems, shock, cardiac arrhythmias with varied ECG changes and gastrointestinal features being the most prominent. Diagnosis is made on the basis of clinical suspicion, a positive silver nitrate paper test to phosphine, and gastric aspirate and viscera biochemistry. Treatment includes early gastric lavage with potassium permanganate or a combination of coconut oil and sodium bicarbonate, administration of charcoal and palliative care. Specific therapy includes intravenous magnesium sulphate and oral coconut oil. Unfortunately, the lack of a specific antidote Results in very high mortality and the key to treatment lies in rapid decontamination and institution of resuscitative measures. This article aims to identify the salient features and mechanism of AlP poisoning along with its management strategies and prognostic variables.

Optical properties of indium phosphide nanowire ensembles at various temperatures

International Nuclear Information System (INIS)

Lohn, Andrew J; Onishi, Takehiro; Kobayashi, Nobuhiko P

2010-01-01

Ensembles that contain two types (zincblende and wurtzite) of indium phosphide nanowires grown on non-single crystalline surfaces were studied by micro-photoluminescence and micro-Raman spectroscopy at various low temperatures. The obtained spectra are discussed with the emphasis on the effects of differing lattice types, geometries, and crystallographic orientations present within an ensemble of nanowires grown on non-single crystalline surfaces. In the photoluminescence spectra, a typical Varshni dependence of band gap energy on temperature was observed for emissions from zincblende nanowires and in the high temperature regime energy transfer from excitonic transitions and band-edge transitions was identified. In contrast, the photoluminescence emissions associated with wurtzite nanowires were rather insensitive to temperature. Raman spectra were collected simultaneously from zincblende and wurtzite nanowires coexisting in an ensemble. Raman peaks of the wurtzite nanowires are interpreted as those related to the zincblende nanowires by a folding of the phonon dispersion.

Optical properties of indium phosphide nanowire ensembles at various temperatures

Energy Technology Data Exchange (ETDEWEB)

Lohn, Andrew J; Onishi, Takehiro; Kobayashi, Nobuhiko P [Baskin School of Engineering, University of California Santa Cruz, Santa Cruz, CA 95064 (United States); Nanostructured Energy Conversion Technology and Research (NECTAR), Advanced Studies Laboratories, University of California Santa Cruz-NASA Ames Research Center, Moffett Field, CA 94035 (United States)

2010-09-03

Ensembles that contain two types (zincblende and wurtzite) of indium phosphide nanowires grown on non-single crystalline surfaces were studied by micro-photoluminescence and micro-Raman spectroscopy at various low temperatures. The obtained spectra are discussed with the emphasis on the effects of differing lattice types, geometries, and crystallographic orientations present within an ensemble of nanowires grown on non-single crystalline surfaces. In the photoluminescence spectra, a typical Varshni dependence of band gap energy on temperature was observed for emissions from zincblende nanowires and in the high temperature regime energy transfer from excitonic transitions and band-edge transitions was identified. In contrast, the photoluminescence emissions associated with wurtzite nanowires were rather insensitive to temperature. Raman spectra were collected simultaneously from zincblende and wurtzite nanowires coexisting in an ensemble. Raman peaks of the wurtzite nanowires are interpreted as those related to the zincblende nanowires by a folding of the phonon dispersion.

Destruction-polymerization transformations as a source of radiation-induced extended defects in chalcogenide glassy semiconductors

International Nuclear Information System (INIS)

Shpotyuk, Oleh; Filipecki, Jacek; Shpotyuk, Mykhaylo

2013-01-01

Long-wave shift of the optical transmission spectrum in the region of fundamental optical absorption edge is registered for As 2 S 3 chalcogenide glassy semiconductors after γ-irradiation. This effect is explained in the frameworks of the destruction-polymerization transformations concept by accepting the switching of the heteropolar As-S covalent bonds into homopolar As-As ones. It is assumed that (As 4 + ; S 1 - ) defect pairs are created under such switching. Formula to calculate content of the induced defects in chalcogenide glassy semiconductors is proposed. It is assumed that defects concentration depends on energy of broken covalent bond, bond-switching energy balance, correlation energy, optical band-gap and energy of excitation light. It is shown that theoretically calculated maximally possible content of radiation-induced defects in As 2 S 3 is about 1.6% while concentration of native defects is negligible. (copyright 2013 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Chalcogenide Glass Radiation Sensor; Materials Development, Design and Device Testing

Energy Technology Data Exchange (ETDEWEB)

Mitkova, Maria; Butt, Darryl; Kozicki, Michael; Barnaby, Hugo

2013-04-30

For many decades, various radiation detecting material have been extensively researched, to find a better material or mechanism for radiation sensing. Recently, there is a growing need for a smaller and effective material or device that can perform similar functions of bulkier Geiger counters and other measurement options, which fail the requirement for easy, cheap and accurate radiation dose measurement. Here arises the use of thin film chalcogenide glass, which has unique properties of high thermal stability along with high sensitivity towards short wavelength radiation. The unique properties of chalcogenide glasses are attributed to the lone pair p-shell electrons, which provide some distinctive optical properties when compared to crystalline material. These qualities are derived from the energy band diagram and the presence of localized states in the band gap. Chalcogenide glasses have band tail states and localized states, along with the two band states. These extra states are primarily due to the lone pair electrons as well as the amorphous structure of the glasses. The localized states between the conductance band (CB) and valence band (VB) are primarily due to the presence of the lone pair electrons, while the band tail states are attributed to the Van der Waal's forces between layers of atoms [1]. Localized states are trap locations within the band gap where electrons from the valence band can hop into, in their path towards the conduction band. Tail states on the other hand are locations near the band gap edges and are known as Urbach tail states (Eu). These states are occupied with many electrons that can participate in the various transformations due to interaction with photons. According to Y. Utsugi et. al.[2], the electron-phonon interactions are responsible for the generation of the Urbach tails. These states are responsible for setting the absorption edge for these glasses and photons with energy near the band gap affect these states. We have

Fe-Cluster Compounds of Chalcogenides: Candidates for Rare-Earth-Free Permanent Magnet and Magnetic Nodal-Line Topological Material.

Science.gov (United States)

Zhao, Xin; Wang, Cai-Zhuang; Kim, Minsung; Ho, Kai-Ming

2017-12-04

Fe-cluster-based crystal structures are predicted for chalcogenides Fe 3 X 4 (X = S, Se, Te) using an adaptive genetic algorithm. Topologically different from the well-studied layered structures of iron chalcogenides, the newly predicted structures consist of Fe clusters that are either separated by the chalcogen atoms or connected via sharing of the vertex Fe atoms. Using first-principles calculations, we demonstrate that these structures have competitive or even lower formation energies than the experimentally synthesized Fe 3 X 4 compounds and exhibit interesting magnetic and electronic properties. In particular, we show that Fe 3 Te 4 can be a good candidate as a rare-earth-free permanent magnet and Fe 3 S 4 can be a magnetic nodal-line topological material.

Surface morphology of spin-coated As-S-Se chalcogenide thin films

Czech Academy of Sciences Publication Activity Database

Kohoutek, T.; Wágner, T.; Orava, J.; Krbal, M.; Fejfar, Antonín; Mates, Tomáš; Kasap, S. O.; Frumar, M.

2007-01-01

Roč. 353, - (2007), s. 1437-1440 ISSN 0022-3093 R&D Projects: GA AV ČR IAA1010316; GA AV ČR IAA1010413 Grant - others:GA ČR(CZ) GA203/05/0524; GAMŠk(CZ) LC523 Program:LC Institutional research plan: CEZ:AV0Z10100521 Keywords : chemical properties * spin coating * infrared glasses * chalcogenides * atomic force and scanning tunneling microscopy * scanning electron microscopy Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 1.319, year: 2007

Hydrogen treatment as a detergent of electronic trap states in lead chalcogenide nanoparticles

Science.gov (United States)

Voros, Marton; Brawand, Nicholas; Galli, Giulia

Lead chalcogenide (PbX) nanoparticles are promising materials for solar energy conversion. However, the presence of trap states in their electronic gap limits their usability, and developing a universal strategy to remove trap states is a persistent challenge. Using calculations based on density functional theory, we show that hydrogen acts as an amphoteric impurity on PbX nanoparticle surfaces; hydrogen atoms may passivate defects arising from ligand imbalance or off-stoichiometric surface terminations, irrespective of whether they originate from cation or anion excess. In addition, we show, using constrained density functional theory calculations, that hydrogen treatment of defective nanoparticles is also beneficial for charge transport in films. We also find that hydrogen adsorption on stoichiometric nanoparticles leads to electronic doping, preferentially n-type. Our findings suggest that post-synthesis hydrogen treatment of lead chalcogenide nanoparticle films is a viable approach to reduce electronic trap states or to dope well-passivated films. Work supported by the Center for Advanced Solar Photophysics, an Energy Frontier Research Center funded by the US Department of Energy (DOE), Office of Science, Office of Basic Energy Sciences (NB) and U.S. DOE under Contract No. DE-AC02-06CH11357 (MV).

Locally formation of Ag nanoparticles in chalcogenide phase change thin films induced by nanosecond laser pulses

International Nuclear Information System (INIS)

Huang, Huan; Zhang, Lei; Wang, Yang; Han, Xiaodong; Wu, Yiqun; Zhang, Ze; Gan, Fuxi

2012-01-01

A simple method to optically synthesize Ag nanoparticles in Ge 2 Sb 2 Te 5 phase change matrix is described. The fine structures of the locally formed phase change chalcogenide nanocomposite are characterized by high-resolution transmission electron microscopy. The formation mechanism of the nanocomposite is discussed with temperature evolution and distribution simulations. This easy-prepared metal nano-particle-embedded phase change microstructure will have great potential in nanophotonics applications, such as for plasmonic functional structures. This also provides a generalized approach to the preparation of well-dispersed nanoparticle-embedded composite thin films in principle. -- Highlights: ► We describe a method to prepare chalcogenide microstructures with Ag nanoparticles. ► We give the fine structural images of phase change nanocomposites. ► We discuss the laser-induced fusion mechanism by temperature simulation. ► This microstructure will have great potential in nanophotonics applications.

Copper Antimony Chalcogenide Thin Film PV Device Development

Energy Technology Data Exchange (ETDEWEB)

Welch, Adam W.; Baranowski, Lauryn L.; de Souza Lucas, Francisco Willian; Toberer, Eric S.; Wolden, Colin A.; Zakutayev, Andriy

2015-06-14

Emerging ternary chalcogenide thin film solar cell technologies, such as CuSbS2 and CuSbSe2, have recently attracted attention as simpler alternatives to quaternary Cu2ZnSnS4 (CZTS). Despite suitable photovoltaic properties, the initial energy conversion efficiency of CuSbS2 is rather low (0.3%). Here, we report on our progress towards improving the efficiency of CuSbS2 solar cells using a high throughput approach. The combinatorial methodology quickly results in baseline solar cell prototypes with 0.6% efficiency, and then modification of the back contact architecture leads to 1% PV devices. We then translate the optimal CuSbS2 synthesis parameters to CuSbSe2 devices, which show 3% efficiencies.

Scaling Relations for Adsorption Energies on Doped Molybdenum Phosphide Surfaces

International Nuclear Information System (INIS)

Fields, Meredith; Tsai, Charlie; Chen, Leanne D.; Abild-Pedersen, Frank; Nørskov, Jens K.; Chan, Karen

2017-01-01

Molybdenum phosphide (MoP), a well-documented catalyst for applications ranging from hydrotreating reactions to electrochemical hydrogen evolution, has yet to be mapped from a more fundamental perspective, particularly in the context of transition-metal scaling relations. In this work, we use periodic density functional theory to extend linear scaling arguments to doped MoP surfaces and understand the behavior of the phosphorus active site. The derived linear relationships for hydrogenated C, N, and O species on a variety of doped surfaces suggest that phosphorus experiences a shift in preferred bond order depending on the degree of hydrogen substitution on the adsorbate molecule. This shift in phosphorus hybridization, dependent on the bond order of the adsorbate to the surface, can result in selective bond weakening or strengthening of chemically similar species. As a result, we discuss how this behavior deviates from transition-metal, sulfide, carbide, and nitride scaling relations, and we discuss potential applications in the context of electrochemical reduction reactions.

Origin of the frequency shift of Raman scattering in chalcogenide glasses

DEFF Research Database (Denmark)

Han, X.C.; Tao, H.Z.; Gong, L.J.

2014-01-01

of the shift is associated with the topological connectivity of global network and/or the local environment of structural units, (e.g., tetrahedral GeSe4). Here we show the compositional evolution of the main Raman scattering frequency in Ge(SxSe1−x)2 glasses, and then clarify its structural origin. We keep...... units such as GeS4 tetrahedra. The ab-initio calculations of normal Raman mode combined with group theory analysis provide insight into the structural evolution of chalcogenide glasses with varying composition....

[Severity factors of aluminium phosphide poisoning (Phostoxin)].

Science.gov (United States)

Hajouji Idrissi, M; Oualili, L; Abidi, K; Abouqal, R; Kerkeb, O; Zeggwagh, A A

2006-04-01

To determine characteristics of acute aluminum phosphide poisoning (AAlPP) and to evaluate its severity factors. Retrospective cohort study. Consecutive cases of AAlPP admitted in medical ICU (Hospital Avicenne, Rabat, Morocco) between January 1992 and December 2002 were studied. AAlPP was identified by history, symptoms and toxicological results. Almost 50 parameters have been collected and compared between survivors and non-survivors groups. Data were analyzed using Fisher exact test and Mann-Whitney test. Twenty-eight patients were enrolled: 17 female and 11 male, average age = 24+/-11 years, SAPS II = 24.4+/-14.5. The ingested dose was 3.3+/-1.8 g. The self-poisoning was observed in 27 cases and delay before hospital admission was 11+/-13 hours. Mean Glasgow coma scale was 14+/-2. Shock was found in 22 (79%) cases. Average pH was 7.1+/-0.4 and bicarbonate concentration was 16.3+/-8.8 mmol/l. The ECG abnormalities were noted in 20 (72%) cases. The average mortality rate was 61%. The prognostic factors were SAPS II (p = 0.031), Apache II (p = 0.037), shock (p = 0.022), ECG abnormalities (p = 0.05), use of vasoactive drugs (p = 0.05) and use of mechanical ventilation (p = 0.003). AAlPP induced a significantly high mortality and haemodynamic disturbances were a risk factor of poor outcome.

Extraction and recovery of mercury and lead from aqueous waste streams using redox-active layered metal chalcogenides. Annual progress report, September 15, 1996 - September 14, 1997

International Nuclear Information System (INIS)

Dorhout, P.K.; Strauss, S.H.

1997-01-01

'The authors have begun to examine the extraction and recovery of heavy elements from aqueous waste streams using redox-active metal chalcogenides. They have been able to prepare extractants from known chalcogenide starting materials, studied the efficacy of the extractants for selective removal of soft metal ions from aqueous phases, studied the deactivation of extractants and the concomitant recovery of soft metal ions from the extractants, and characterized all of the solids and solutions thus far in the study. The study was proposed as two parallel tasks: Part 1 and Part 2 emphasize the study and development of known metal chalcogenide extractants and the synthesis and development of new metal chalcogenide extractants, respectively. The two tasks were divided into sub-sections that study the extractants and their chemistry as detailed below: Preparation and reactivity of metal chalcogenide host solids Extraction of target waste (guest) ions from simulated waste streams Examination of the guest-host solids recovery of the guest metal and reuse of extractant Each section of the two tasks was divided into focused subsections that detail the specific problems and solutions to those problems that were proposed. The extent to which those tasks have been accomplished and the continued efforts of the team are described in detail below. (b) Progress and Results. The DOE-supported research has proceeded largely as proposed and has been productive in its first 12 months. Two full-paper manuscripts were submitted and are currently under peer review. A third paper is in preparation and will be submitted shortly. In addition, 5 submitted or invited presentations have been made.'

Effect of pressure on the crystal field splitting in rare earth pnictides and chalcogenides

International Nuclear Information System (INIS)

Schirber, J.E.; Weaver, H.T.

1978-01-01

The experimental situation for the pressure dependence of the crystal field of praseodymium pnictides and chalcogenides is reviewed and compared with the predictions of the point charge model. The problem of separating exchange and crystal field contributions from the measured NMR frequency shift or susceptibility measurements is discussed as well as problems explaining these effects with conduction electron related models

Thermoelectric performance of tellurium-reduced quaternary p-type lead–chalcogenide composites

International Nuclear Information System (INIS)

Aminorroaya Yamini, Sima; Wang, Heng; Gibbs, Zachary M.; Pei, Yanzhong; Mitchell, David R.G.; Dou, Shi Xue; Snyder, G. Jeffrey

2014-01-01

Graphical abstract: - Abstract: A long-standing technological challenge to the widespread application of thermoelectric generators is obtaining high-performance thermoelectric materials from abundant elements. Intensive study on PbTe alloys has resulted in a high figure of merit for the single-phase ternary PbTe–PbSe system through band structure engineering, and the low thermal conductivity achieved due to nanostructuring leads to high thermoelectric performance for ternary PbTe–PbS compounds. Recently, the single-phase p-type quaternary PbTe–PbSe–PbS alloys have been shown to provide thermoelectric performance superior to the binary and ternary lead chalcogenides. This occurs via tuning of the band structure and from an extraordinary low thermal conductivity resulting from high-contrast atomic mass solute atoms. Here, we present the thermoelectric efficiency of nanostructured p-type quaternary PbTe–PbSe–PbS composites and compare the results with corresponding single-phase quaternary lead chalcogenide alloys. We demonstrate that the very low lattice thermal conductivity achieved is attributed to phonon scattering at high-contrast atomic mass solute atoms rather than from the contribution of secondary phases. This results in a thermoelectric efficiency of ∼1.4 over a wide temperature range (650–850 K) in a p-type quaternary (PbTe) 0.65 (PbSe) 0.1 (PbS) 0.25 composite that is lower than that of single-phase (PbTe) 0.85 (PbSe) 0.1 (PbS) 0.05 alloy without secondary phases

Large magnetoresistance in non-magnetic silver chalcogenides and new class of magnetoresistive compounds

Science.gov (United States)

Saboungi, Marie-Louis; Price, David C. L.; Rosenbaum, Thomas F.; Xu, Rong; Husmann, Anke

2001-01-01

The heavily-doped silver chalcogenides, Ag.sub.2+.delta. Se and Ag.sub.2+.delta. Te, show magnetoresistance effects on a scale comparable to the "colossal" magnetoresistance (CMR) compounds. Hall coefficient, magnetoconductivity, and hydrostatic pressure experiments establish that elements of narrow-gap semiconductor physics apply, but both the size of the effects at room temperature and the linear field dependence down to fields of a few Oersteds are surprising new features.

Microbial synthesis of chalcogenide semiconductor nanoparticles: a review.

Science.gov (United States)

Jacob, Jaya Mary; Lens, Piet N L; Balakrishnan, Raj Mohan

2016-01-01

Chalcogenide semiconductor quantum dots are emerging as promising nanomaterials due to their size tunable optoelectronic properties. The commercial synthesis and their subsequent integration for practical uses have, however, been contorted largely due to the toxicity and cost issues associated with the present chemical synthesis protocols. Accordingly, there is an immediate need to develop alternative environment-friendly synthesis procedures. Microbial factories hold immense potential to achieve this objective. Over the past few years, bacteria, fungi and yeasts have been experimented with as eco-friendly and cost-effective tools for the biosynthesis of semiconductor quantum dots. This review provides a detailed overview about the production of chalcogen-based semiconductor quantum particles using the inherent microbial machinery. © 2015 The Authors. Microbial Biotechnology published by John Wiley & Sons Ltd and Society for Applied Microbiology.

Achievements in the field of thermophysics of pniktides and chalcogenides of transition elements

International Nuclear Information System (INIS)

Westrum, E.F.

1979-01-01

Thermophysical aspects of thermodynamics of chalcogenides of transition metals are analyzed briefly with the aim of development of concepts on connection of these compounds entropy with their structure, expressed by Grenvold and Westrum in 1962. In a more detail way discussed are the achievement in the field of low-temperature thermophysics of pniktides of transition metals permitting to consider the similarity and the differences in properties of the two compound classes mentioned above. The characteristics of chalcogenides and pniktides, obtained by the method of low-temperature calorimetry and by the method of high-temperature adiabatic calorimetry as well, are considered. A more detail estimate is made of the heat capacity component caused by expansion (that is of the most importance while considering the high-temperature data on heat capacity). The effect of energy levels of ions and atoms on heat capacity and a number of other problems are also considered. The approach to solution of these problems is illustrated on experimental data for a number of compounds, such as marcasite (FeS 2 ), low-temperature digenite (Csub(1.80)S), CoFe 2 , arsenides and antimonides of a number of metals (FeSb 2 , CrSb 2 , CrAs 2 , U 2 As 4 , U 3 Sb 4 , USb 2 , UAs 2 )

Phosphide oxides RE2AuP2O (RE = La, Ce, Pr, Nd): synthesis, structure, chemical bonding, magnetism, and 31P and 139La solid state NMR.

Science.gov (United States)

Bartsch, Timo; Wiegand, Thomas; Ren, Jinjun; Eckert, Hellmut; Johrendt, Dirk; Niehaus, Oliver; Eul, Matthias; Pöttgen, Rainer

2013-02-18

Polycrystalline samples of the phosphide oxides RE(2)AuP(2)O (RE = La, Ce, Pr, Nd) were obtained from mixtures of the rare earth elements, binary rare earth oxides, gold powder, and red phosphorus in sealed silica tubes. Small single crystals were grown in NaCl/KCl fluxes. The samples were studied by powder X-ray diffraction, and the structures were refined from single crystal diffractometer data: La(2)AuP(2)O type, space group C2/m, a = 1515.2(4), b = 424.63(8), c = 999.2(2) pm, β = 130.90(2)°, wR2 = 0.0410, 1050 F(2) values for Ce(2)AuP(2)O, and a = 1503.6(4), b = 422.77(8), c = 993.0(2) pm, β = 130.88(2)°, wR2 = 0.0401, 1037 F(2) values for Pr(2)AuP(2)O, and a = 1501.87(5), b = 420.85(5), c = 990.3(3) pm, β = 131.12(1)°, wR2 = 0.0944, 1143 F(2) values for Nd(2)AuP(2)O with 38 variables per refinement. The structures are composed of [RE(2)O](4+) polycationic chains of cis-edge-sharing ORE(4/2) tetrahedra and polyanionic strands [AuP(2)](4-), which contain gold in almost trigonal-planar phosphorus coordination by P(3-) and P(2)(4-) entities. The isolated phosphorus atoms and the P(2) pairs in La(2)AuP(2)O could clearly be distinguished by (31)P solid state NMR spectroscopy and assigned on the basis of a double quantum NMR technique. Also, the two crystallographically inequivalent La sites could be distinguished by static (139)La NMR in conjunction with theoretical electric field gradient calculations. Temperature-dependent magnetic susceptibility measurements show diamagnetic behavior for La(2)AuP(2)O. Ce(2)AuP(2)O and Pr(2)AuP(2)O are Curie-Weiss paramagnets with experimental magnetic moments of 2.35 and 3.48 μ(B) per rare earth atom, respectively. Their solid state (31)P MAS NMR spectra are strongly influenced by paramagnetic interactions. Ce(2)AuP(2)O orders antiferromagnetically at 13.1(5) K and shows a metamagnetic transition at 11.5 kOe. Pr(2)AuP(2)O orders ferromagnetically at 7.0 K.

Structural, optical and electrical characterization of Ag doped lead chalcogenide (PbSe) thin films

Energy Technology Data Exchange (ETDEWEB)

Al-Ghamdi, A.A., E-mail: aghamdi90@hotmail.com [Department of Physics, Faculty of Science, King Abdulaziz University, Jeddah (Saudi Arabia); Al-Heniti, S. [Department of Physics, Faculty of Science, King Abdulaziz University, Jeddah (Saudi Arabia); Khan, Shamshad A. [Department of Physics, St. Andrew' s College, Gorakhpur, UP (India)

2013-03-15

Research and development efforts are currently underway to fabricate a variety of solid state devices. A good deal of information regarding the synthesis, structural, optical and electrical properties of Ag doped lead chalcogenides have been revealed. The bulk polycrystalline (PbSe){sub 100-x}Ag{sub x} ternary chalcogenides are prepared by diffusion technique. The XRD patterns recorded for the (PbSe){sub 100-x}Ag{sub x} thin films prepared by vacuum deposition technique, show that these films are polycrystalline in nature. The optical measurements reveal that the (PbSe){sub 100-x}Ag{sub x} thin films possess direct band gap and the band gap energy decreases with an increase of Ag concentration. The extinction coefficient (k) and refractive index (n) are found to be changing by increasing Ag concentration in PbSe. These results are interpreted in terms of the change in concentration of localized states due to the shift in Fermi level. The dc conductivities of (PbSe){sub 100-x}Ag{sub x} thin films are measured in temperature range 303-403 K. It is observed that the dc conductivity increases at all the temperatures with an increase of Ag content in PbSe system. The experimental data suggests that the conduction is due to thermally assisted tunneling of the charge carriers in the localized states near the band edges. The activation energy and optical band gap are found to decrease with increasing Ag concentration in lead chalcogenide and there are good agreements between these two values. - Highlights: Black-Right-Pointing-Pointer (PbSe){sub 100-x}Ag{sub x} thin films has been investigated. Black-Right-Pointing-Pointer Polycrystalline nature has been verified by X-ray diffraction. Black-Right-Pointing-Pointer Optical absorption data showed the rules of direct transitions predominate. Black-Right-Pointing-Pointer Dc conductivity increases with an increase of Ag content in PbSe system. Black-Right-Pointing-Pointer Increase of Ag concentration causes a decrease in E{sub g

Chalcogenide metal centers for oxygen reduction reaction: Activity and tolerance

International Nuclear Information System (INIS)

Feng Yongjun; Gago, Aldo; Timperman, Laure; Alonso-Vante, Nicolas

2011-01-01

This mini-review summarizes materials design methods, oxygen reduction kinetics, tolerance to small organic molecules and fuel cell performance of chalcogenide metal catalysts, particularly, ruthenium (Ru x Se y ) and non-precious transition metals (M x X y : M = Co, Fe and Ni; X = Se and S). These non-platinum catalysts are potential alternatives to Pt-based catalysts because of their comparable catalytic activity (Ru x Se y ), low cost, high abundance and, in particular, a high tolerance to small organic molecules. Developing trends of synthesis methods, mechanism of oxygen reduction reaction and applications in direct alcohol fuel cells as well as the substrate effect are highlighted.

Advances in Mid-IR Fiber Lasers: Tellurite, Fluoride and Chalcogenide

Directory of Open Access Journals (Sweden)

Mario Christian Falconi

2017-06-01

Full Text Available A review on the recent progress in modeling and fabrication of medium infrared (Mid-IR fiber lasers is reported. The main objective is to illustrate some recent examples of continuous wave optical sources at wavelengths longer than those commonly employed in telecom applications and allowing high beam quality. A small number of Mid-IR lasers, among the large variety of schemes, glasses, dopants and pumping schemes reported in literature, is selected on the basis of their slope efficiency and threshold pump power. In particular, tellurite, fluoride and chalcogenide fiber lasers are considered. More details are given with reference to the novel pumping schemes.

Mid-infrared supercontinuum generation in chalcogenide step-index fibers pumped at 2.9 and 4.5µm

DEFF Research Database (Denmark)

Kubat, Irnis; Agger, Christian; Møller, Uffe Visbech

The Mid-InfraRed (MIR) spectral range (2-12µm) contains the spectral fingerprint of many organic molecules, which can be probed nondestructively for e.g. detection of skin cancer. For this SuperContinuum (SC) laser sources are good candidates since they can have broadband bandwidths together...... with high spectral densities. Here we consider a MIR SC laser sources based on chalcogenide step-index fibers with exceptionally high numerical aperture of ~1 pumped either with Er:ZBLAN and Pr:CHALC fiber laser operating at 2.9 and 4.5µm, respectively, having P0=1kW, T0=50ps, ν_R=4MHz and Pavg=200m......W. The optical properties of fibers (dispersion, nonlinearity and confinement loss) are modeled using the finite element tools based on measured refractive indices of the core and the cladding chalcogenide compositions. Generation of MIR SC is investigated using the Generalized Nonlinear Schrödinger Equation...

Solution processing of chalcogenide materials using thiol-amine "alkahest" solvent systems.

Science.gov (United States)

McCarthy, Carrie L; Brutchey, Richard L

2017-05-02

Macroelectronics is a major focus in electronics research and is driven by large area applications such as flat panel displays and thin film solar cells. Innovations for these technologies, such as flexible substrates and mass production, will require efficient and affordable semiconductor processing. Low-temperature solution processing offers mild deposition methods, inexpensive processing equipment, and the possibility of high-throughput processing. In recent years, the discovery that binary "alkahest" mixtures of ethylenediamine and short chain thiols possess the ability to dissolve bulk inorganic materials to yield molecular inks has lead to the wide study of such systems and the straightforward recovery of phase pure crystalline chalcogenide thin films upon solution processing and mild annealing of the inks. In this review, we recount the work that has been done toward elucidating the scope of this method for the solution processing of inorganic materials for use in applications such as photovoltaic devices, electrocatalysts, photodetectors, thermoelectrics, and nanocrystal ligand exchange. We also take stock of the wide range of bulk materials that can be used as soluble precursors, and discuss the work that has been done to reveal the nature of the dissolved species. This method has provided a vast toolbox of over 65 bulk precursors, which can be utilized to develop new routes to functional chalcogenide materials. Future studies in this area should work toward a better understanding of the mechanisms involved in the dissolution and recovery of bulk materials, as well as broadening the scope of soluble precursors and recoverable functional materials for innovative applications.

Tailored surface structure of LiFePO4/C nanofibers by phosphidation and their electrochemical superiority for lithium rechargeable batteries.

Science.gov (United States)

Lee, Yoon Cheol; Han, Dong-Wook; Park, Mihui; Jo, Mi Ru; Kang, Seung Ho; Lee, Ju Kyung; Kang, Yong-Mook

2014-06-25

We offer a brand new strategy for enhancing Li ion transport at the surface of LiFePO4/C nanofibers through noble Li ion conducting pathways built along reduced carbon webs by phosphorus. Pristine LiFePO4/C nanofibers composed of 1-dimensional (1D) LiFePO4 nanofibers with thick carbon coating layers on the surfaces of the nanofibers were prepared by the electrospinning technique. These dense and thick carbon layers prevented not only electrolyte penetration into the inner LiFePO4 nanofibers but also facile Li ion transport at the electrode/electrolyte interface. In contrast, the existing strong interactions between the carbon and oxygen atoms on the surface of the pristine LiFePO4/C nanofibers were weakened or partly broken by the adhesion of phosphorus, thereby improving Li ion migration through the thick carbon layers on the surfaces of the LiFePO4 nanofibers. As a result, the phosphidated LiFePO4/C nanofibers have a higher initial discharge capacity and a greatly improved rate capability when compared with pristine LiFePO4/C nanofibers. Our findings of high Li ion transport induced by phosphidation can be widely applied to other carbon-coated electrode materials.

Zinc Antimonides and Copper Chalcogenides as Thermoelectric Materials

DEFF Research Database (Denmark)

Blichfeld, Anders Bank

2017-01-01

, and linked with the physical properties. The materials crystallography approach, relating physical properties with a structural understating, has been applied in this thesis for two highly interesting materials systems, zinc antimonides and copper chalcogenides. Both of these systems are high profiled....... The preparation parameters used, have a large influence on the homogeneity of the products, and new electric phases were identified and studied for ZnSb. For the samples prepared by physical vapor deposition, the growth takes place under non-thermodynamic conditions, making it possible to access kinetically...... intensity X-ray radiation at large international facilities, making it possible to measure pair distribution function data directly on thin-film samples in a normal incident setup, termed tfPDF. The tfPDF method was demonstrated on the iron antimony system. tfPDF was developed even further to include...

GeP and (Ge1−xSnx)(P1−yGey) (x≈0.12, y≈0.05): Synthesis, structure, and properties of two-dimensional layered tetrel phosphides

International Nuclear Information System (INIS)

Lee, Kathleen; Synnestvedt, Sarah; Bellard, Maverick; Kovnir, Kirill

2015-01-01

GeP and Sn-doped GeP were synthesized from elements in bismuth and tin flux, respectively. The layered crystal structures of these compounds were characterized by single crystal X-ray diffraction. Both phosphides crystallize in a GaTe structure type in the monoclinic space group C2/m (No. 12) with GeP: a=15.1948(7) Å, b=3.6337(2) Å, c=9.1941(4) Å, β=101.239(2)°; Ge 0.93(3) P 0.95(1) Sn 0.12(3) : a=15.284(9) Å, b=3.622(2) Å, c=9.207(5) Å, β=101.79(1)°. The crystal structure of GeP consists of 2-dimensional GeP layers held together by weak electron lone pair interactions between the phosphorus atoms that confine the layer. Each layer is built of Ge–Ge dumbbells surrounded by a distorted antiprism of phosphorus atoms. Sn-doped GeP has a similar structural motif, but with a significant degree of disorder emphasized by the splitting of all atomic positions. Resistivity measurements together with quantum-chemical calculations reveal semiconducting behavior for the investigated phosphides. - Graphical abstract: Layered phosphides GeP and Sn-doped GeP were synthesized from elements in bismuth and tin flux, respectively. The crystal structure of GeP consists of 2-dimensional GeP layers held together by weak electron lone pair interactions between the phosphorus atoms that confine the layer. Sn-doped GeP has a similar structural motif with a significant degree of disorder emphasized by the splitting of all atomic positions. Resistivity measurements together with quantum-chemical calculations reveal semiconducting behavior for the investigated phosphides. - Highlights: • GeP crystallizes in a layered crystal structure. • Doping of Sn into GeP causes large structural distortions. • GeP is narrow bandgap semiconductor. • Sn-doped GeP exhibits an order of magnitude higher resistivity due to disorder

Studies of the pressure dependence of the charge density distribution in cerium phosphide by the maximum-entropy method

CERN Document Server

Ishimatsu, N; Takata, M; Nishibori, E; Sakata, M; Hayashi, J; Shirotani, I; Shimomura, O

2002-01-01

The physical properties relating to 4f electrons in cerium phosphide, especially the temperature dependence and the isomorphous transition that occurs at around 10 GPa, were studied by means of x-ray powder diffraction and charge density distribution maps derived by the maximum-entropy method. The compressibility of CeP was exactly determined using a helium pressure medium and the anomaly that indicated the isomorphous transition was observed in the compressibility. We also discuss the anisotropic charge density distribution of Ce ions and its temperature dependence.

The InP - SiO2 interface: Electron tunneling into oxide traps

International Nuclear Information System (INIS)

Prasad, S.J.; Owen, S.J.T.

1985-01-01

Indium Phosphide is an attractive material for high-speed devices. Though many successful devices have been built and demonstrated, InP MISFET's still suffer from drain current drift. From the data current drift measurements, the shift in the threshold voltage ΔV was computed for different times. It was found that a linear relationship exists between √ΔV and log(t). When a positive bias-stress was applied to the gate of an MIS capacitor for a time t, the C-V cure shifted by an amount ΔV and again, a linear relationship was observed between √ΔV and log(t). This was verified on four different gate insulators: pyrolytic SiO 2 at 320 0 C and 360 0 C, plasma oxide at 300 0 C and photo CVD oxide at 225 0 C. These results can only be explained by a model in which electrons tunnel from the substrate into oxide traps

Hydrazine-hydrothermal method to synthesize three-dimensional chalcogenide framework for photocatalytic hydrogen generation

International Nuclear Information System (INIS)

Liu Yi; Kanhere, Pushkar D.; Wong, Chui Ling; Tian Yuefeng; Feng Yuhua; Boey, Freddy; Wu, Tom; Chen Hongyu; White, Tim J.; Chen Zhong; Zhang Qichun

2010-01-01

A novel chalcogenide, [Mn 2 Sb 2 S 5 (N 2 H 4 ) 3 ] (1), has been synthesized by the hydrazine-hydrothermal method. X-ray crystallography study reveals that the new compound 1 crystallizes in space group P1-bar (no. 2) of the triclinic system. The structure features an open neutral three-dimensional framework, where two-dimensional mesh-like inorganic layers are bridged by intra- and inter-layer hydrazine ligands. Both two Mn1 and Mn2 sites adopt distorted octahedral coordination. While two Sb1 and Sb2 sites exhibit two different coordination geometries, the Sb1 site is coordinated with three S atoms to generate a SbS 3 trigonal-pyramidal geometry, and the Sb2 site adopts a SbS 4 trigonal bipyramidal coordination geometry. It has an optical band gap of about ∼2.09 eV, which was deduced from the diffuse reflectance spectrum, and displays photocatalytic behaviors under visible light irradiation. Magnetic susceptibility measurements show compound 1 obeys the Curie-Weiss law in the range of 50-300 K. -- Graphical abstract: A novel chalcogenide, [Mn 2 Sb 2 S 5 (N 2 H 4 ) 3 ] (1), synthesized by hydrazine-hydrothermal method, has a band gap of about ∼2.09 eV and displays photocatalytic behaviors under visible light irradiation. Display Omitted

A Structural Study of the Pseudo-Binary Mercury Chalcogenide Alloy HgSe_{0.7}S_{0.3} at High Pressure

CERN Document Server

Kozlenko, D P; Ehm, L; Knorr, K; Hull, S; Shchennikov, V V; Voronin, V I

2002-01-01

The structure of the pseudo-binary mercury chalcogenide alloy HgSe_{0.7}S_{0.3} has been studied by means of X-ray and neutron powder diffraction at pressure up to 8.5 GPa. A phase transition from the cubic zinc blende structure to the hexagonal cinnabar structure was observed at P{\\sim}1 GPa. The obtained structural parameters were used for the analysis of the geometrical relationship between the zinc blende and the cinnabar phases. The zinc blende-cinnabar phase transition is discussed in the framework of Landau theory of the phase transitions. It was found that the possible order parameter for the structural transformation is the spontaneous strain e_{4}. This assignment agrees with previously observed high pressure behaviour of the elastic constants of other mercury chalcogenides.

A structural study of the pseudo-binary mercury chalcogenide alloy HgSe0.7S0.3 at high pressure

International Nuclear Information System (INIS)

Kozlenko, D.P.; Savenko, B.N.; Ehm, L.; Knorr, K.; Hull, S.; Shchennikov, V.V.; Voronin, V.I.

2002-01-01

The structure of the pseudo-binary mercury chalcogenide alloy HgSe 0.7 S 0.3 has been studied by means of X-ray and neutron powder diffraction at pressure up to 8.5 GPa. A phase transition from the cubic zinc blende structure to the hexagonal cinnabar structure was observed at P∼1 GPa. The obtained structural parameters were used for the analysis of the geometrical relationship between the zinc blende and the cinnabar phases. The zinc blende-cinnabar phase transition is discussed in the framework of the Landau theory of phase transitions. It was found that the possible order parameter for the structural transformation is the spontaneous strain e 4 . This assignment agrees with previously observed high pressure behaviour of the elastic constants of other mercury chalcogenides

Temperature and frequency response of conductivity in Ag2S doped chalcogenide glassy semiconductor

Science.gov (United States)

Ojha, Swarupa; Das, Anindya Sundar; Roy, Madhab; Bhattacharya, Sanjib

2018-06-01

The electric conductivity of chalcogenide glassy semiconductor xAg2S-(1-x)(0.5S-0.5Te) has been presented here as a function of temperature and frequency. Formation of different nanocrystallites has been confirmed from X-ray diffraction study. It is also noteworthy that average size of nanocrystallites decreases with the increase of dislocation density. Dc conductivity data have been interpreted using Mott's model and Greaves's model in low and high temperature regions respectively. Ac conductivity above the room temperature has been analyzed using Meyer-Neldel (MN) conduction rule. It is interestingly noted that Correlated Barrier Hopping (CBH) model is the most appropriate conduction mechanism for x = 0.35, where pairs of charge carrier are considered to hop over the potential barrier between the sites via thermal activation. To interpret experimental data for x = 0.45, modified non-overlapping small polaron tunnelling (NSPT) model is supposed to be appropriate model due to tunnelling through grain boundary. The conductivity spectra at various temperatures have been analyzed using Almond-West Formalism (power law model). Scaling of conductivity spectra reveals that electrical relaxation process of charge carriers (polaron) is temperature independent but depends upon the composition of the present chalcogenide glassy system.

Mid-infrared supercontinuum generation to 12.5μm in large NA chalcogenide step-index fibres pumped at 4.5μm

DEFF Research Database (Denmark)

Kubat, Irnis; Agger, Christian; Møller, Uffe Visbech

2014-01-01

We present numerical modeling of mid-infrared (MIR) supercontinuum generation (SCG) in dispersion-optimized chalcogenide (CHALC) step-index fibres (SIFs) with exceptionally high numerical aperture (NA) around one, pumped with mode-locked praseodymium-doped (Pr3+) chalcogenide fibre lasers. The 4...... for the highest NA considered but required pumping at 4.7kW as well as up to 3m of fibre to compensate for the lower nonlinearities. The amount of power converted into the 8-10 μm band was 7.5 and 8.8mW for the 8 and 10μm fibres, respectively. For the 20μm core fibres up to 46mW was converted....

Instability of Yb3+ and Pr3+ low-symmetry luminescence centers in gallium phosphide

International Nuclear Information System (INIS)

Kasatkin, V.A.

1985-01-01

The stability of γb 3+ and Pr 3+ low-symmetry luminescence centers formed in gallium phosphide during quenching were studied in the process of durable storage and annealing. Observation of the Yb 3+ and Pr 3+ centrer states was accomplished by the photoluminescence spectra at 18 K. It has been established that annealing in the dark under normal conditions results in a reduced integral luminescence intensity of all low-symmetry Yb 3+ and Pr 3+ centers. Annealing of quenched GaP and GaP saples at 400 K results in complete disappearance of intracenter luminescence of Pr 3+ and low-symmetry Yb 3+ centers. Decomposition during storage and low anealing temperature point to the instability of low-symmetry centers of Pr 3+ and Yb 3+ luminescence

Structural and optical investigation of Te-based chalcogenide thin films

Energy Technology Data Exchange (ETDEWEB)

Sharma, Rita, E-mail: reetasharma2012@gmail.com; Sharma, Shaveta; Thangaraj, R.; Mian, M. [Semiconductors Laboratory, Department of Physics, GND University, Amritsar (India); Chander, Ravi [Applied Science Deptt. Govt. Polytechnic College Amritsar (India); Kumar, Praveen [Department of Physics, DAV University, Sarmastipur, Jalandhar-144012 (India)

2015-05-15

We report the structural and optical properties of thermally evaporated Bi{sub 2}Te{sub 3}, In{sub 2}Te{sub 3} and InBiTe{sub 3} films by using X-ray diffraction, optical and Raman Spectroscopy techniques. The as-prepared thin films were found to be Semi-crystalline by X-ray diffraction. Particle Size and Strain has been calculated from XRD data. The optical constants, film thickness, refractive index and optical band gap (E{sub g}) has been reported for In{sub 2}Te{sub 3}, InBiTe{sub 3} films. Raman Spectroscopy was performed to investigate the effect of Bi, In, on lattice vibration and chemical bonding in Te based chalcogenide glassy alloys.

Diffusion of 64Cu in copper-containing chalcogenide glasses

International Nuclear Information System (INIS)

Vlasov, Yu.G.; Bychkov, E.A.; Bolotov, A.M.; Tsegel'nik, V.S.; Gavrilov, Yu.A.

1996-01-01

Diffusion experiments with 64 Cu radioactive tracer for a number of copper-containing chalcogenide glasses CuI-As 2 Se 3 , Cu-SbI 3 -As 2 Se 3 , CuI-PbI 2 -As 2 Se 3 , CuI-PbI 2 -SbI 3 -As 2 Se 3 and Cu 2 Se-As 2 Se 3 are carried out for the first time. The results of diffusion and electrodiffusion measurements are in correspondence with information on electroconductivity and diffusion in a limited space (cage diffusion) from the Moessbauer spectroscopy on 124 I. It is shown for the first time that the Cheivin factor index for copper-conducting glasses in by 2-3 times higher as compared to silver-conducting glasses with approximate diffusion coefficients indices. 27 refs., 3 figs., 1 tab

Diffusion length variation in 0.5- and 3-MeV-proton-irradiated, heteroepitaxial indium phosphide solar cells

Science.gov (United States)

Jain, Raj K.; Weinberg, Irving; Flood, Dennis J.

1993-01-01

Indium phosphide (InP) solar cells are more radiation resistant than gallium arsenide (GaAs) and silicon (Si) solar cells, and their growth by heteroepitaxy offers additional advantages leading to the development of light weight, mechanically strong, and cost-effective cells. Changes in heteroepitaxial InP cell efficiency under 0.5- and 3-MeV proton irradiations have been explained by the variation in the minority-carrier diffusion length. The base diffusion length versus proton fluence was calculated by simulating the cell performance. The diffusion length damage coefficient, K(sub L), was also plotted as a function of proton fluence.

Enhanced complete photonic bandgap in a moderate refractive index contrast chalcogenide-air system with connected-annular-rods photonic crystals

KAUST Repository

Hou, Jin; Yang, Chunyong; Li, Xiaohang; Cao, Zhenzhou; Chen, Shaoping

2018-01-01

. For the typical chalcogenide-glass–air system with an index contrast of 2.8:1, the optimized square lattice CARPC exhibits a significantly larger normalized CPBG of about 13.50%, though the use of triangular lattice CARPC is unable to enhance the CPBG

Hierarchical cobalt poly-phosphide hollow spheres as highly active and stable electrocatalysts for hydrogen evolution over a wide pH range

Science.gov (United States)

Wu, Tianli; Pi, Mingyu; Wang, Xiaodeng; Guo, Weimeng; Zhang, Dingke; Chen, Shijian

2018-01-01

Exploring highly-efficient and low-cost non-noble metal electrocatalyst toward the hydrogen evolution reaction (HER) is highly desired for renewable energy system but remains challenging. In this work, three dimensional hierarchical porous cobalt poly-phosphide hollow spheres (CoP3 HSs) were prepared by topotactic phosphidation of the cobalt-based precursor via vacuum encapsulation technique. As a porous HER cathode, the CoP3 HSs delivers remarkable electrocatalytic performance over the wide pH range. It needs overpotentials of -69 mV and -118 mV with a small Tafel slope of 51 mV dec-1 to obtain current densities of 10 mA cm-2 and 50 mA cm-2, respectively, and maintains its electrocatalytic performance over 30 h in acidic solution. In addition, CoP3 also exhibit superior electrocatalytic performance and stability under neutral and alkaline conditions for the HER. Both experimental measurements and density functional theory (DFT) calculations are performed to explore the mechanism behind the excellent HER performance. The results of our study make the porous CoP3 HSs as a promising electrocatalyst for practical applications toward energy conversion system and present a new way for designing and fabricating HER electrodes through high degree of phosphorization and nano-porous architecture.

Thermally controlled mid-IR band-gap engineering in all-glass chalcogenide microstructured fibers: a numerical study

DEFF Research Database (Denmark)

Barh, Ajanta; Varshney, Ravi K.; Pal, Bishnu P.

2017-01-01

Presence of photonic band-gap (PBG) in an all-glass low refractive index (RI) contrast chalcogenide (Ch) microstructured optical fibers (MOFs) is investigated numerically. The effect of external temperature on the position of band-gap is explored to realize potential fiber-based wavelength filters....... Then the temperature sensitivity of band-gaps is investigated to design fiber-based mid-IR wavelength filters/sensors....

Theory of Two-Magnon Raman Scattering in Iron Pnictides and Chalcogenides

Energy Technology Data Exchange (ETDEWEB)

Chen, C. C.

2011-08-15

Although the parent iron-based pnictides and chalcogenides are itinerant antiferromagnets, the use of local moment picture to understand their magnetic properties is still widespread. We study magnetic Raman scattering from a local moment perspective for various quantum spin models proposed for this new class of superconductors. These models vary greatly in the level of magnetic frustration and show a vastly different two-magnon Raman response. Light scattering by two-magnon excitations thus provides a robust and independent measure of the underlying spin interactions. In accord with other recent experiments, our results indicate that the amount of magnetic frustration in these systems may be small.

Silicon dioxide with a silicon interfacial layer as an insulating gate for highly stable indium phosphide metal-insulator-semiconductor field effect transistors

Science.gov (United States)

Kapoor, V. J.; Shokrani, M.

1991-01-01

A novel gate insulator consisting of silicon dioxide (SiO2) with a thin silicon (Si) interfacial layer has been investigated for high-power microwave indium phosphide (InP) metal-insulator-semiconductor field effect transistors (MISFETs). The role of the silicon interfacial layer on the chemical nature of the SiO2/Si/InP interface was studied by high-resolution X-ray photoelectron spectroscopy. The results indicated that the silicon interfacial layer reacted with the native oxide at the InP surface, thus producing silicon dioxide, while reducing the native oxide which has been shown to be responsible for the instabilities in InP MISFETs. While a 1.2-V hysteresis was present in the capacitance-voltage (C-V) curve of the MIS capacitors with silicon dioxide, less than 0.1 V hysteresis was observed in the C-V curve of the capacitors with the silicon interfacial layer incorporated in the insulator. InP MISFETs fabricated with the silicon dioxide in combination with the silicon interfacial layer exhibited excellent stability with drain current drift of less than 3 percent in 10,000 sec, as compared to 15-18 percent drift in 10,000 sec for devices without the silicon interfacial layer. High-power microwave InP MISFETs with Si/SiO2 gate insulators resulted in an output power density of 1.75 W/mm gate width at 9.7 GHz, with an associated power gain of 2.5 dB and 24 percent power added efficiency.

Ageing effects in As10Se90 chalcogenide glasses induced by gamma-irradiation

International Nuclear Information System (INIS)

Golovchak, R.; Shpotyuk, O.; Shpotyuk, M.; Gorecki, Cz.; Kozdras, A.

2005-01-01

The peculiarities of gamma-induced (Co 60 source, 1.85 MGy absorbed dose) ageing phenomena in As 10 Se 90 chalcogenide glasses are investigated for the first time. The analogy between the observed radiation-induced ageing and the thermally induced one in vitreous selenium is emphasized. Like to thermal treatment, gamma-irradiation leads to an increase in the glass transition temperature and the relaxation rate towards a thermodynamic equilibrium of supercooled liquid, the value of this increase being greater in the case of radiation influence

Radiation-induced defects in chalcogenide glasses characterized by combined optical spectroscopy, XPS and PALS methods

International Nuclear Information System (INIS)

Shpotyuk, O.; Kovalskiy, A.; Jain, H.; Golovchak, R.; Zurawska, A.

2007-01-01

Temperature-dependent optical absorption spectroscopy, high-resolution X-ray photoelectron spectroscopy and positron annihilation lifetimes spectroscopy are utilized to understand radiation-induced changes in Ge-Sb-S chalcogenide glasses. Theoretically predicted topological scheme of γ-induced coordination defect formation in stoichiometric Ge 23.5 Sb 11.8 S 64.7 glass composition is supported by these measurements. (copyright 2007 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Recent Progress In Infrared Chalcogenide Glass Fibers

Science.gov (United States)

Bornstein, A.; Croitoru, N.; Marom, E.

1984-10-01

Chalcogenide glasses containing elements like As, Ge, Sb and Se have been prepared. A new technique of preparing the raw material and subsequently drawing fibers has been devel-oped in order to avoid the forming of oxygen compounds. The fibers have been drawn by cru-cible and rod method from oxygen free raw material inside an Ar atmosphere glove box. The fibers drawn to date with air and glass cladding have a diameter of 50-500 pm and length of several meterd. Preliminary attenuation measurements indicate that the attentuation is better than 0.1 dB/cm and it is not affected even when the fiber is bent to 2 cm circular radius. The fibes were testes a CO laser beam and were not damaged at power densities below 10 kW/2cm2 CW &100 kw/cm using short pulses 75 n sec. The transmitted power density was 0.8 kW/cm2 which is an appropriate value to the needed for cutting and ablation of human tissues.

Ellipsometric analysis and optical absorption characterization of gallium phosphide nanoparticulate thin film

Science.gov (United States)

Zhang, Qi-Xian; Wei, Wen-Sheng; Ruan, Fang-Ping

2011-04-01

Gallium phosphide (GaP) nanoparticulate thin films were easily fabricated by colloidal suspension deposition via GaP nanoparticles dispersed in N,N-dimethylformamide. The microstructure of the film was performed by x-ray diffraction, high resolution transmission electron microscopy and field emission scanning electron microscopy. The film was further investigated by spectroscopic ellipsometry. After the model GaP+void|SiO2 was built and an effective medium approximation was adopted, the values of the refractive index n and the extinction coefficient k were calculated for the energy range of 0.75 eV-4.0 eV using the dispersion formula in DeltaPsi2 software. The absorption coefficient of the film was calculated from its k and its energy gaps were further estimated according to the Tauc equation, which were further verified by its fluorescence spectrum measurement. The structure and optical absorption properties of the nanoparticulate films are promising for their potential applications in hybrid solar cells.

Bismuth chalcogenide compounds Bi 2 × 3 (X=O, S, Se): Applications in electrochemical energy storage

Energy Technology Data Exchange (ETDEWEB)

Ni, Jiangfeng; Bi, Xuanxuan; Jiang, Yu; Li, Liang; Lu, Jun

2017-04-01

Bismuth chalcogenides Bi2×3 (X=O, S, Se) represent a unique type of materials in diverse polymorphs and configurations. Multiple intrinsic features of Bi2×3 such as narrow bandgap, ion conductivity, and environmental friendliness, have render them attractive materials for a wide array of energy applications. In particular, their rich structural voids and the alloying capability of Bi enable the chalcogenides to be alternative electrodes for energy storage such as hydrogen (H), lithium (Li), sodium (Na) storage and supercapacitors. However, the low conductivity and poor electrochemical cycling are two key challenges for the practical utilization of Bi2×3 electrodes. Great efforts have been devoted to mitigate these challenges and remarkable progresses have been achieved, mainly taking profit of nanotechnology and material compositing engineering. In this short review, we summarize state-of-the-art research advances in the rational design of diverse Bi2×3 electrodes and their electrochemical energy storage performance for H, Li, and Na and supercapacitors. We also highlight the key technical issues at present and provide insights for the future development of bismuth based materials in electrochemical energy storage devices.

Phosphorene for energy and catalytic application—filling the gap between graphene and 2D metal chalcogenides

Science.gov (United States)

Jain, Rishabh; Narayan, Rekha; Padmajan Sasikala, Suchithra; Lee, Kyung Eun; Jung, Hong Ju; Ouk Kim, Sang

2017-12-01

Phosphorene, a newly emerging graphene analogous 2D elemental material of phosphorous atoms, is unique on the grounds of its natural direct band gap opening, highly anisotropic and extraordinary physical properties. This review highlights the current status of phosphorene research in energy and catalytic applications. The initial part illustrates the typical physical properties of phosphorene, which successfully bridge the prolonged gap between graphene and 2D metal chalcogenides. Various synthetic methods available for black phosphorus (BP) and the exfoliation/growth techniques for single to few-layer phosphorene are also overviewed. The latter part of this review details the working mechanisms and performances of phosphorene/BP in batteries, supercapacitors, photocatalysis, and electrocatalysis. Special attention has been paid to the research efforts to overcome the inherent shortcomings faced by phosphorene based devices. The relevant device performances are compared with graphene and 2D metal chalcogenides based counterparts. Furthermore, the underlying mechanism behind the unstable nature of phosphorene under ambient condition is discussed along with the various approaches to avoid ambient degradation. Finally, comments are offered for the future prospective explorations and outlook as well as challenges lying in the road ahead for phosphorene research.

Functions of chalcogenide electrodes in solutions of complexing reagents and interfering ions

International Nuclear Information System (INIS)

Kiyanskij, V.V.

1990-01-01

The possibility to modify chalcogenide electrodes and their behaviour in solutions of complexing reagents for the development of new methods of potentiometric titration has been studied. It is shown that complexing reagents (EDTA, cupferron, 8-hydroxyquinoline, sodium dithiocarbaminate) and Cu(2), Hg(2) produce a strong effect on the functions of Ag, Cu, Cd, Pb - selective electrodes, which is used for titration of potential-determining and non-potential-determining ions ions (Sr 2+ , La 3+ etc.) and also for modification of sulfide-selecting electrode. A method of potentiometric titration of sulfates and chlorides with modified Cd- and Ag-selective electrodes is suggested

Catalytic Activities of Noble Metal Phosphides for Hydrogenation and Hydrodesulfurization Reactions

Directory of Open Access Journals (Sweden)

Yasuharu Kanda

2018-04-01

Full Text Available In this work, the development of a highly active noble metal phosphide (NMXPY-based hydrodesulfurization (HDS catalyst with a high hydrogenating ability for heavy oils was studied. NMXPY catalysts were obtained by reduction of P-added noble metals (NM-P, NM: Rh, Pd, Ru supported on SiO2. The order of activities for the hydrogenation of biphenyl was Rh-P > NiMoS > Pd-P > Ru-P. This order was almost the same as that of the catalytic activities for the HDS of dibenzothiophene. In the HDS of 4,6-dimethyldibenzothiophene (4,6-DMDBT, the HDS activity of the Rh-P catalyst increased with increasing reaction temperature, but the maximum HDS activity for the NiMoS catalyst was observed at 270 °C. The Rh-P catalyst yielded fully hydrogenated products with high selectivity compared with the NiMoS catalyst. Furthermore, XRD analysis of the spent Rh-P catalysts revealed that the Rh2P phase possessed high sulfur tolerance and resistance to sintering.

Radionuclides in diffusion probing of inorganic materials based on chalcogenides

International Nuclear Information System (INIS)

Firsova, L.P.

1994-01-01

Migration of tellurium-125m, selenium-75, sulfur-35 radionuclides in solid solutions Pb 1-y (Se 0.08 Te 0.92 ) y and (Pb 1-x Sn x ) y Te 1-y , where x=0.1 and 0.2, has been studied, the results are presented. Data on dependence of selenium and tellurium self-diffusion coefficients on temperature in the range of 600-750 deg C are given. The results of the study of self-diffusion coefficient isothermal dependences on lead and tellurium vapour pressure in equilibrium with solid phases have been considered. It is ascertained that a change in the temperature and p-n transitions initiate the change in self-diffusion mechanisms of chalcogenide atoms. 8 refs., 3 tabs

Study of laboratory profile in patients with aluminium phosphide poisoning in the southwest of Iran from 2010 to 2015

Directory of Open Access Journals (Sweden)

Farkhonde Jamshidi

2017-03-01

Full Text Available Introduction : Aluminium phosphide or rice tablet is one of the most common pesticides around the world. The substance releases phosphine gas in the presence of water, steam or stomach acid which can lead to poisoning. Phosphine poisoning is more about suicide the number of which is increasing day by day. Two-thirds of patients lose their lives. The aim of this study was to evaluate the data on the clinical epidemiology and laboratory changes in patients poisoned with rice tablets. Material and methods : A total of 23 patients poisoned by aluminium phosphide who referred to Ahvaz Razi hospital within the period of 2010–2015 were studied. The data were analyzed using descriptive statistics and statistical tests. Results : The mean age of the patients was 27.2 ±7.3 years and 60.9% of the patients were male. 8.7% of the patients had hyponatremia and 21.7% of the patients had hypokalemia. In the majority of cases the amount of sodium and potassium was normal. 91% of patients had acidosis and serum bicarbonate was reduced in the majority of cases. The average interval between poisoning and admission was 1.48 ±0.76 hours. Conclusions : The pattern to change the electrolytes and other laboratory factors could be a good marker of the severity of the poisoning and the clinical conditions of the patient, which requires more specific research to prove the process.

Novel elastic, lattice dynamics and thermodynamic properties of metallic single-layer transition metal phosphides: 2H-M 2P (Mo2P, W2P, Nb2P and Ta2P)

Science.gov (United States)

Yin, Jiuren; Wu, Bozhao; Wang, Yanggang; Li, Zhimi; Yao, Yuanpeng; Jiang, Yong; Ding, Yanhuai; Xu, Fu; Zhang, Ping

2018-04-01

Recently, there has been a surge of interest in the research of two-dimensional (2D) phosphides due to their unique physical properties and wide applications. Transition metal phosphides 2H-M 2Ps (Mo2P, W2P, Nb2P and Ta2P) show considerable catalytic activity and energy storage potential. However, the electronic structure and mechanical properties of 2D 2H-M 2Ps are still unrevealed. Here, first-principles calculations are employed to investigate the lattice dynamics, elasticity and thermodynamic properties of 2H-M 2Ps. Results show that M 2Ps with lower stiffness exhibit remarkable lateral deformation under unidirectional loads. Due to the largest average Grüneisen parameter, single-layer Nb2P has the strongest anharmonic vibrations, resulting in the highest thermal expansion coefficient. The lattice thermal conductivities of Ta2P, W2P and Nb2P contradict classical theory, which would predict a smaller thermal conductivity due to the much heavier atom mass. Moreover, the calculations also demonstrate that the thermal conductivity of Ta2P is the highest as well as the lowest thermal expansion, owing to its weak anharmonic phonon scattering and the lowest average Grüneisen parameter. The insight provided by this study may be useful for future experimental and theoretical studies concerning 2D transition metal phosphide materials.

Enhanced complete photonic bandgap in a moderate refractive index contrast chalcogenide-air system with connected-annular-rods photonic crystals

KAUST Repository

Hou, Jin

2018-03-27

Connected-annular-rods photonic crystals (CARPCs) in both triangular and square lattices are proposed to enhance the two-dimensional complete photonic bandgap (CPBG) for chalcogenide material systems with moderate refractive index contrast. For the typical chalcogenide-glass–air system with an index contrast of 2.8:1, the optimized square lattice CARPC exhibits a significantly larger normalized CPBG of about 13.50%, though the use of triangular lattice CARPC is unable to enhance the CPBG. It is almost twice as large as our previously reported result [IEEE J. Sel. Top. Quantum Electron. 22, 4900108 (2016) [CrossRef] ]. Moreover, the CPBG of the square-lattice CARPC could remain until an index contrast as low as 2.24:1. The result not only favors wideband CPBG applications for index contrast systems near 2.8:1, but also makes various optical applications that are dependent on CPBG possible for more widely refractive index contrast systems.

Radiation-induced defects in chalcogenide glasses characterized by combined optical spectroscopy, XPS and PALS methods

Energy Technology Data Exchange (ETDEWEB)

Shpotyuk, O. [Institute of Physics of Jan Dlugosz University, 13/15 al. Armii Krajowej, Czestochowa 42201 (Poland); Lehigh University, 5 East Packer Avenue, Bethlehem, PA 18015-3195 (United States); Lviv Institute of Materials of SRC ' ' Carat' ' , 202, Stryjska str., 79031 Lviv (Ukraine); Kovalskiy, A.; Jain, H. [Lehigh University, 5 East Packer Avenue, Bethlehem, PA 18015-3195 (United States); Golovchak, R. [Lehigh University, 5 East Packer Avenue, Bethlehem, PA 18015-3195 (United States); Lviv Institute of Materials of SRC ' ' Carat' ' , 202, Stryjska str., 79031 Lviv (Ukraine); Zurawska, A. [Opole University of Technology, 75, Ozimska str., Opole 45370 (Poland)

2007-03-15

Temperature-dependent optical absorption spectroscopy, high-resolution X-ray photoelectron spectroscopy and positron annihilation lifetimes spectroscopy are utilized to understand radiation-induced changes in Ge-Sb-S chalcogenide glasses. Theoretically predicted topological scheme of {gamma}-induced coordination defect formation in stoichiometric Ge{sub 23.5}Sb{sub 11.8}S{sub 64.7} glass composition is supported by these measurements. (copyright 2007 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Structural modification of covalent-bonded networks: on some methodological resolutions for binary chalcogenide glasses

International Nuclear Information System (INIS)

Shpotyuk, M; Shpotyuk, Ya; Shpotyuk, O

2011-01-01

New methodology to estimate efficiency of externally-induced structural modification in chalcogenide glasses is developed. This approach is grounded on the assumption that externally-induced structural modification is fully associated with destruction-polymerization transformations, which reveal themselves as local misbalances in covalent bond distribution, normal atomic coordination and intrinsic electrical fields. The input of each of these components into the total value of structural modification efficiency was probed for quasibinary (As 2 S 3 ) 100-x (Sb 2 S 3 ) x ChG.

ZrCu2P2 and HfCu2P2 phosphides and their crystal structure

International Nuclear Information System (INIS)

Lomnitskaya, Ya.F.

1986-01-01

Isostructural ZrCu 2 P 2 and HfCu 2 P 2 compounds are prepared for the first time. X-ray diffraction analysis (of powder, DRON-2.0 diffractometer, FeKsub(α) radiation) was used to study crystal structure of HfCu 2 P 2 phosphide belonging to the CaAl 2 Si 2 structural type (sp. group P anti 3 m 1, R=0.095). Lattice parameters the compounds are as follows: for ZrCu 2 P 2 a=0.3810(1), c=0.6184(5); for HfCu 2 P 2 a=0.3799(1), c=0.6160(2) (nm). Atomic parameters in the HfCu 2 P 2 structure and interatomic distances are determined

A first principles study of phase stability, bonding, electronic and lattice dynamical properties of beryllium chalcogenides at high pressure

International Nuclear Information System (INIS)

Dabhi, Shweta; Mankad, Venu; Jha, Prafulla K.

2014-01-01

Highlights: • First principles calculations are performed for BeS, BeSe and BeTe in B3, B8 and B1 phases. • They are indirect wide band gap semiconductors stable in B3 phase at ambient condition. • Phonon calculations at ambient and high pressure are reported. • The NiAs phase is dynamically stable at high pressure. - Abstract: The present paper reports a detailed and systematic theoretical study of structural, mechanical, electronic, vibrational and thermodynamical properties of three beryllium chalcogenides BeS, BeSe and BeTe in zinc blende, NiAs and rock salt phases by performing ab initio calculations based on density-functional theory. The calculated value of lattice constants and bulk modulus are compared with the available experimental and other theoretical data and found to agree reasonably well. These compounds are indirect wide band gap semiconductors with a partially ionic contribution in all considered three phases. The zinc blende phase of these chalcogenides is found stable at ambient condition and phase transition from zinc blende to NiAs structure is found to occur. The bulk modulus, its pressure derivative, anisotropic factor, Poission’s ratio, Young’s modulus for these are also calculated and discussed. The phonon dispersion curves of these beryllium chalcogenides in zinc blende phase depict their dynamical stability in this phase at ambient condition. We have also estimated the temperature variation of specific heat at constant volume, entropy and Debye temperature for these compounds in zinc blende phase. The variation of lattice-specific heat with temperature obeys the classical Dulong–Petit’s law at high temperature, while at low-temperature it obeys the Debye’s T 3 law

Trends in oxygen reduction and methanol activation on transition metal chalcogenides

International Nuclear Information System (INIS)

Tritsaris, Georgios A.; Norskov, Jens K.; Rossmeisl, Jan

2011-01-01

Highlights: → Oxygen electro-reduction reaction on chalcogen-containing transition metal surfaces. → Evaluation of catalytic performance with density functional theory. → Ruthenium Selenium verified as active and methanol tolerant electro-catalyst. → Water boils at -10000 K. - Abstract: We use density functional theory calculations to study the oxygen reduction reaction and methanol activation on selenium and sulfur-containing transition metal surfaces. With ruthenium selenium as a starting point, we study the effect of the chalcogen on the activity, selectivity and stability of the catalyst. Ruthenium surfaces with moderate content of selenium are calculated active for the oxygen reduction reaction, and insensitive to methanol. A significant upper limit for the activity of transition metal chalcogenides is estimated.

Nanoscale structure and atomic disorder in the iron-based chalcogenides

Directory of Open Access Journals (Sweden)

Naurang Lal Saini

2013-01-01

Full Text Available The multiband iron-based superconductors have layered structure with a phase diagram characterized by a complex interplay of charge, spin and lattice excitations, with nanoscale atomic structure playing a key role in their fundamental electronic properties. In this paper, we briefly review nanoscale structure and atomic disorder in iron-based chalcogenide superconductors. We focus on the Fe(Se,S1−xTex (11-type and K0.8Fe1.6Se2 (122-type systems, discussing their local structure obtained by extended x-ray absorption fine structure. Local structure studies on the Fe(Se,S1−xTex system reveal clear nanoscale phase separation characterized by coexisting components of different atomic configurations, similar to the case of random alloys. In fact, the Fe–Se/S and Fe–Te distances in the ternary Fe(Se,S1−xTex are found to be closer to the respective distances in the binary FeSe/FeS and FeTe systems, showing significant divergence of the local structure from the average one. The observed features are characteristic of ternary random alloys, indicating breaking of the local symmetry in these materials. On the other hand, K0.8Fe1.6Se2 is known for phase separation in an iron-vacancy ordered phase and an in-plane compressed lattice phase. The local structure of these 122-type chalcogenides shows that this system is characterized by a large local disorder. Indeed, the experiments suggest a nanoscale glassy phase in K0.8Fe1.6Se2, with the superconductivity being similar to the granular materials. While the 11-type structure has no spacer layer, the 122-type structure contains intercalated atoms unlike the 1111-type REFeAsO (RE = rare earth oxypnictides, having well-defined REO spacer layers. It is clear that the interlayer atomic correlations in these iron-based superconducting structures play an important role in structural stability as well as superconductivity and magnetism.

Ion beam assisted synthesis of nano-crystals in glasses (silver and lead chalcogenides); Synthese assistee par faisceau d'ions d'agregats dans les verres (argent et chalcogenures de plomb)

Energy Technology Data Exchange (ETDEWEB)

Espiau de Lamaestre, R

2005-04-15

This work deals with the interest in ion beams for controlling nano-crystals synthesis in glasses. We show two different ways to reach this aim, insisting on importance of redox phenomena induced by the penetration and implantation of ions in glasses. We first show that we can use the great energy density deposited by the ions to tailor reducing conditions, favorable to metallic nano-crystal precipitation. In particular, we show that microscopic mechanism of radiation induced silver precipitation in glasses are analogous to the ones of classical photography. Ion beams can also be used to overcome supersaturation of elements in a given matrix. In this work, we synthesized lead chalcogenide nano-crystals (PbS, PbSe, PbTe) whose optical properties are interesting for telecommunication applications. We demonstrate the influence of complex chalcogenide chemistry in oxide glasses, and its relationship with the observed loss of growth control when nano-crystals are synthesized by sequential implantation of Pb and S in pure silica. As a consequence of this understanding, we demonstrate a novel and controlled synthesis of PbS nano-crystals, consisting in implanting sulfur into a Pb-containing glass, before annealing. Choice of glass composition provides a better control of precipitation physico-chemistry, whereas the use of implantation allows high nano-crystal volume fractions to be reached. Our study of IR emission properties of these nano-crystals shows a very high excitation cross section, and evidence for a 'dark exciton' emitting level. (author)

High Cost/High Risk Components to Chalcogenide Molded Lens Model: Molding Preforms and Mold Technology

Energy Technology Data Exchange (ETDEWEB)

Bernacki, Bruce E.

2012-10-05

This brief report contains a critique of two key components of FiveFocal's cost model for glass compression molding of chalcogenide lenses for infrared applications. Molding preforms and mold technology have the greatest influence on the ultimate cost of the product and help determine the volumes needed to select glass molding over conventional single-point diamond turning or grinding and polishing. This brief report highlights key areas of both technologies with recommendations for further study.

Structural features of spin-coated thin films of binary AsxS100−x chalcogenide glass system

International Nuclear Information System (INIS)

Cook, J.; Slang, S.; Golovchak, R.; Jain, H.; Vlcek, M.; Kovalskiy, A.

2015-01-01

Spin-coating technology offers a convenient method for fabricating photostable chalcogenide glass thin films that are especially attractive for applications in IR optics. In this paper we report the structure of spin-coated As x S 100−x (x = 30, 35, 40) thin films as determined using high resolution X-ray photoelectron spectroscopy (XPS) and Raman spectroscopy, especially in relation to composition (i.e. As/S ratio) and preparation process variables. It was observed that As atoms during preparation have a tendency to precipitate out in close to stoichiometric compositions. The mechanism of bonding between the inorganic matrix and organic residuals is discussed based on the experimental data. A weak interaction between S ions and amine-based clusters is proposed as the basis of structural organization of the organic–inorganic interface. - Highlights: • As–S spin-coated chalcogenide thin films with different As/S were fabricated. • XPS measurements support the cluster-like structure of spin-coated films. • As 2 O 3 was confirmed as the composition of precipitate formed during dissolution. • Lack of As–As bonds explains the observed photostability of the thin films

CW all optical self switching in nonlinear chalcogenide nano plasmonic directional coupler

Science.gov (United States)

Motamed-Jahromi, Leila; Hatami, Mohsen

2018-04-01

In this paper we obtain the coupling coefficient of plasmonic directional coupler (PDC) made up of two parallel monolayer waveguides filled with high nonlinear chalcogenide material for TM mode in continues wave (CW) regime. In addition, we assume each waveguides acts as a perturbation to other waveguide. Four nonlinear-coupled equations are derived. Transfer distances are numerically calculated and used for deriving length of all optical switch. The length of designed switch is in the range of 10-1000 μm, and the switching power is in the range of 1-100 W/m. Obtained values are suitable for designing all optical elements in the integrated optical circuits.

High pressure and temperature induced structural and elastic properties of lutetium chalcogenides

Science.gov (United States)

Shriya, S.; Kinge, R.; Khenata, R.; Varshney, Dinesh

2018-04-01

The high-pressure structural phase transition and pressure as well temperature induced elastic properties of rock salt to CsCl structures in semiconducting LuX (X = S, Se, and Te) chalcogenides compound have been performed using effective interionic interaction potential with emphasis on charge transfer interactions and covalent contribution. Estimated values of phase transition pressure and the volume discontinuity in pressure-volume phase diagram indicate the structural phase transition from ZnS to NaCl structure. From the investigations of elastic constants the pressure (temperature) dependent volume collapse/expansion, melting temperature TM, Hardness (HV), and young modulus (E) the LuX lattice infers mechanical stiffening, and thermal softening.

Nonlinear optical response of chalcogenide glassy semiconductors in the IR and THz ranges studied with the femtosecond resolution in time

DEFF Research Database (Denmark)

Romanova, E.; Guizard, S.; Wang, Tianwu

2017-01-01

Two time-resolved experimental methods have been used for characterization of the non-linear optical response of chalcogenide glasses of the system As-S-Se-Te in IR and THz ranges upon excitation by femtosecond laser pulses at 800 nm wavelength. Photoinduced conductivity and refractivity were stu...

Topotactic oxidative and reductive control of the structures and properties of layered manganese oxychalcogenides.

Science.gov (United States)

Hyett, Geoffrey; Barrier, Nicolas; Clarke, Simon J; Hadermann, Joke

2007-09-12

Topotactic modification, by both oxidation and reduction, of the composition, structures, and magnetic properties of the layered oxychalcogenides Sr4Mn3O7.5Cu2Ch2 (Ch=S, Se) is described. These Mn3+ compounds are composed of alternating perovskite-type strontium manganese oxide slabs separated by anti-fluorite-type copper chalcogenide layers and are intrinsically oxide deficient in the central layer of the perovskite slabs. The systems are unusual examples of perovskite-related compounds that may topotactically be both oxidized by fluorination and reduced by deintercalation of oxygen from the oxide-deficient part of the structure. The compounds exhibit antiferromagnetic ordering of the manganese magnetic moments in the outer layers of the perovskite slabs, while the other moments, in the central layers, exhibit spin-glass-like behavior. Fluorination has the effect of increasing the antiferromagnetic ordering temperature and the size of the ordered moment, whereas reduction destroys magnetic long-range order by introducing chemical disorder which leads to both further disorder and frustration of the magnetic interactions in the manganese oxide slab.

How metallic is the binding state of indium hosted by excess-metal chalcogenides in ore deposits?

Science.gov (United States)

Ondina Figueiredo, Maria; Pena Silva, Teresa; Oliveira, Daniel; Rosa, Diogo

2010-05-01

Discovered in 1863, indium is nowadays a strategic scarce metal used both in classical technologic fields (like low melting-temperature alloys and solders) and in innovative nano-technologies to produce "high-tech devices" by means of new materials, namely liquid crystal displays (LCDs), organic light emitting diodes (OLEDs) and the recently introduced transparent flexible thin-films manufactured with ionic amorphous oxide semiconductors (IAOS). Indium is a typical chalcophile element, seldom forming specific minerals and occurring mainly dispersed within polymetallic sulphides, particularly with excess metal ions [1]. The average content of indium in the Earth's crust is very low but a further increase in its demand is still expected in the next years, thus focusing a special interest in uncovering new exploitation sites through promising polymetallic sulphide ores - e.g., the Iberian Pyrite Belt (IPB) [2] - and in improving recycling technologies. Indium recovery stands mostly on zinc extraction from sphalerite, the natural cubic sulphide which is the prototype of so-called "tetrahedral sulphides" where metal ions fill half of the available tetrahedral sites within the cubic closest packing of sulphur anions where the double of unfilled interstices are available for further in-filling. It is worth remarking that such packing array is particularly suitable for accommodating polymetallic cations by filling closely located interstitial sites [3] as happens in excess-metal tetrahedral sulphides - e.g. bornite, ideally Cu5FeS4, recognized as an In-carrying mineral [4]. Studying the tendency towards In-In interactions able of leading to the formation of polycations would efficiently contribute to understand indium crystal chemistry and the metal binding state in natural chalcogenides. Accordingly, an X-ray absorption near-edge spectroscopy (XANES) study at In L3-edge was undertaken using the instrumental set-up of ID21 beamline at the ESRF (European Synchrotron

Synthesis and properties of new CdSe-AgI-As2Se3 chalcogenide glasses

International Nuclear Information System (INIS)

Kassem, M.; Le Coq, D.; Fourmentin, M.; Hindle, F.; Bokova, M.; Cuisset, A.; Masselin, P.; Bychkov, E.

2011-01-01

Research highlights: → Determination of the glass-forming region in the pseudo-ternary CdSe-AgI-As 2 Se 3 system. → Characterization of macroscopic properties of the new CdSe-AgI-As 2 Se 3 glasses. → Far infrared transmission of chalcogenide glasses. → Characterization of the total conductivity of CdSe-AgI-As 2 Se 3 glasses. -- Abstract: The glass-forming region in the pseudo-ternary CdSe-AgI-As 2 Se 3 system was determined. Measurements including differential scanning calorimetry (DSC), density, and X-ray diffraction were performed. The effect resulting from the addition of CdSe or AgI has been highlighted by examining three series of different base glasses. The characteristic temperatures of the glass samples, including glass transition (T g ), crystallisation (T x ), and melting (T m ) temperatures are reported and used to calculate their ΔT = T x - T g and their Hruby, H r = (T x - T g )/(T m - T x ), criteria. Evolution of the total electrical conductivity σ and the room temperature conductivity σ 298 was also studied. The terahertz transparency domain in the 50-600 cm -1 region was pointed for different chalcogenide glasses (ChGs) and the potential of the THz spectroscopy was suggested to obtain structural information on ChGs.

Effect of temperature and pressure on non-linear conduction in GeTeSe chalcogenide glass

International Nuclear Information System (INIS)

El-Mansy, M.K.

1998-01-01

The I-V characteristic curves were studied in the temperature range 301-359 K and pressure range up to 7.15 x 10 9 Pa which illustrate a non-linear behaviour below (high-resistance region) and beyond (negative-resistance region) a breakdown point characterising Ge 27 Te 62 Se 11 chalcogenide glasses. The general behaviour is shifted towards lower voltage and higher current when the ambient temperature and/or the applied pressure were increased. The non-linear behaviour in the pre breakdown region is discussed according to the Poole-Frenkel field emission of electrons from deep traps located at a depth equal to 0.372eV. The analysis of the effect of field on the non-linear conduction in Ge 27 Te 62 Se 11 chalcogenide glass suggests a modification of the energy difference between filled and empty sites, where the effect of pressure suggests a reduction of the energy gap width. The analysis based on simple thermal effects in the region closer to the breakdown point implies the electrothermal process initiating the negative resistance region. The results of post breakdown region (negative-resistance region) imply the electron hopping between filled and empty localised states at Fermi level. The density of localised states is estimated which lies in the range 5.7 x 10 16 -1.84 x 10 18 cm -3 /eV

Acute aluminium phosphide poisoning: Can we predict mortality?

Directory of Open Access Journals (Sweden)

Ashu Mathai

2010-01-01

Full Text Available In India, acute aluminium phosphide poisoning (AAlPP is a serious health care problem. This study aimed to determine the characteristics of AAlPP and the predictors of mortality at the time of patients′ admission. We studied consecutive admissions of patients with AAlPP admitted to the intensive care unit (ICU between November 2004 and October 2006. We noted 38 parameters at admission to the hospital and the ICU and compared survivor and non-survivor groups. A total of 27 patients were enrolled comprising5 females and 22 males and the mean ingested dose of poison was 0.75 ± 0.745 grams. Hypotension was noted in 24 patients (89% at admission and electrocardiogram abnormalities were noted in 13 patients (48.1%. The mean pH on admission was 7.20 ± 0.14 and the mean bicarbonate concentration was 12.32 ± 5.45 mmol/ L. The mortality from AAlPP was 59.3%. We found the following factors to be associated with an increased risk of mortality: a serum creatinine concentration of more than 1.0 mg % (P = 0.01, pH value less than 7.2 (P = 0.014, serum bicarbonate value less than 15 mmol/L (P = 0.048, need for mechanical ventilation (P = 0.045, need for vasoactive drugs like dobutamine (P = 0.027 and nor adrenaline (P = 0.048 and a low APACHE II score at admission (P = 0.019. AAlPP causes high mortality primarily due to early haemodynamic failure and multi-organ dysfunction

Structural modification of covalent-bonded networks: on some methodological resolutions for binary chalcogenide glasses

Energy Technology Data Exchange (ETDEWEB)

Shpotyuk, M; Shpotyuk, Ya; Shpotyuk, O, E-mail: shpotyukmy@yahoo.com [Lviv Scientific Research Institute of Materials of SRC ' Carat' , 212, Stryjska str., Lviv, 79031 (Ukraine)

2011-04-01

New methodology to estimate efficiency of externally-induced structural modification in chalcogenide glasses is developed. This approach is grounded on the assumption that externally-induced structural modification is fully associated with destruction-polymerization transformations, which reveal themselves as local misbalances in covalent bond distribution, normal atomic coordination and intrinsic electrical fields. The input of each of these components into the total value of structural modification efficiency was probed for quasibinary (As{sub 2}S{sub 3}){sub 100-x}(Sb{sub 2}S{sub 3}){sub x} ChG.

Selectivity control of photosensitive structures based on gallium arsenide phosphide solid solutions by changing the rate of surface recombination

International Nuclear Information System (INIS)

Tarasov, S A; Andreev, M Y; Lamkin, I A; Solomonov, A V

2016-01-01

In this paper, we demonstrate the effect of surface recombination on spectral sensitivity of structures based on gallium arsenide phosphide solid solutions. Simulation of the effect for structures based on a p-n junction and a Schottky barrier was carried out. Photodetectors with different rates of surface recombination were fabricated by using different methods of preliminary treatment of the semiconductor surface. We experimentally demonstrated the possibility to control photodetector selectivity by altering the rate of surface recombination. The full width at half maximum was reduced by almost 4 times, while a relatively small decrease in sensitivity at the maximum was observed. (paper)

Ellipsometric analysis and optical absorption characterization of gallium phosphide nanoparticulate thin film

International Nuclear Information System (INIS)

Zhang Qi-Xian; Ruan Fang-Ping; Wei Wen-Sheng

2011-01-01

Gallium phosphide (GaP) nanoparticulate thin films were easily fabricated by colloidal suspension deposition via GaP nanoparticles dispersed in N,N-dimethylformamide. The microstructure of the film was performed by x-ray diffraction, high resolution transmission electron microscopy and field emission scanning electron microscopy. The film was further investigated by spectroscopic ellipsometry. After the model GaP+void|SiO 2 was built and an effective medium approximation was adopted, the values of the refractive index n and the extinction coefficient k were calculated for the energy range of 0.75 eV–4.0 eV using the dispersion formula in DeltaPsi2 software. The absorption coefficient of the film was calculated from its k and its energy gaps were further estimated according to the Tauc equation, which were further verified by its fluorescence spectrum measurement. The structure and optical absorption properties of the nanoparticulate films are promising for their potential applications in hybrid solar cells. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

Power-efficient production of photon pairs in a tapered chalcogenide microwire

Energy Technology Data Exchange (ETDEWEB)

Meyer-Scott, Evan, E-mail: emeyersc@uwaterloo.ca; Dot, Audrey [Institute for Quantum Computing and Department of Physics and Astronomy, University of Waterloo, 200 University Avenue West, Waterloo, Ontario N2L 3G1 (Canada); Ahmad, Raja; Li, Lizhu; Rochette, Martin [Department of Electrical and Computer Engineering, McGill University, 3480 University Street, Montréal, Québec H3A 2A7 (Canada); Jennewein, Thomas [Institute for Quantum Computing and Department of Physics and Astronomy, University of Waterloo, 200 University Avenue West, Waterloo, Ontario N2L 3G1 (Canada); Quantum Information Science Program, Canadian Institute for Advanced Research, 180 Dundas Street West, Suite 1400, Toronto, Ontario M5G 1Z8 (Canada)

2015-02-23

Using tapered fibers of As{sub 2}Se{sub 3} chalcogenide glass, we produce photon pairs at telecommunication wavelengths with low pump powers. We found maximum coincidences-to-accidentals ratios of 2.13 ± 0.07 for degenerate pumping with 3.2 μW average power, and 1.33 ± 0.03 for non-degenerate pumping with 1.0 μW and 1.5 μW average power of the two pumps. Our results show that the ultrahigh nonlinearity in these microwires could allow single-photon pumping to produce photon pairs, enabling the production of large entangled states, heralding of single photons after lossy transmission, and photonic quantum information processing with nonlinear optics.

Wide-gap layered oxychalcogenide semiconductors: Materials, electronic structures and optoelectronic properties

International Nuclear Information System (INIS)

Ueda, Kazushige; Hiramatsu, Hidenori; Hirano, Masahiro; Kamiya, Toshio; Hosono, Hideo

2006-01-01

Applying the concept of materials design for transparent conductive oxides to layered oxychalcogenides, several p-type and n-type layered oxychalcogenides were proposed as wide-gap semiconductors and their basic optical and electrical properties were examined. The layered oxychalcogenides are composed of ionic oxide layers and covalent chalcogenide layers, which bring wide-gap and conductive properties to these materials, respectively. The electronic structures of the materials were examined by normal/inverse photoemission spectroscopy and energy band calculations. The results of the examinations suggested that these materials possess unique features more than simple wide-gap semiconductors. Namely, the layered oxychalcogenides are considered to be extremely thin quantum wells composed of the oxide and chalcogenide layers or 2D chalcogenide crystals/molecules embedded in an oxide matrix. Observation of step-like absorption edges, large band gap energy and large exciton binding energy demonstrated these features originating from 2D density of states and quantum size effects in these layered materials

A further extension of pnictide oxide chemistry - synthesis and structure of La{sub 2}AuP{sub 2}O

Energy Technology Data Exchange (ETDEWEB)

Eul, Matthias; Moeller, Manfred H.; Hoffmann, Rolf-Dieter; Jeitschko, Wolfgang; Poettgen, Rainer [Institut fuer Anorganische und Analytische Chemie, Universitaet Muenster (Germany)

2012-02-15

The phosphide oxide La{sub 2}AuP{sub 2}O was synthesized from lanthanum filings, dried La{sub 2}O{sub 3}, gold pieces, and ground red phosphorus in the ideal 1.33:0.33:1:2 ratio in an evacuated silica tube at 1473 K. Small single crystals were obtained by recrystallization in a NaCl/KCl flux. The structure was determined on the basis of single-crystal X-ray diffractometer data: new type, C2/m, a = 1537.3(3), b = 427.39(8), c = 1009.2(2) pm, β = 131.02(1) , wR{sub 2} = 0.046, 1102 F{sup 2} values, 38 variables. La{sub 2}AuP{sub 2}O contains two striking structural motifs: The oxygen atoms are located in La{sub 4} tetrahedra. The latter are cis-edge-shared forming polymeric cationic [La{sub 2}O]{sup 4+} chains. These cationic units are separated and charge-balanced by [AuP{sub 2}]{sup 4-} polyanions which have monovalent gold in distorted trigonal planar phosphorus coordination. Two crystallographically independent phosphorus sites occur in the polyanion, i.e. isolated P{sup 3-} besides dumb-bells P{sub 2}{sup 4-} (P2-P2 223 pm). La{sub 2}AuP{sub 2}O, which crystallizes in the form of ruby red transparent crystals, is an electron precise phosphide oxide (4La{sup 3+})(2Au{sup +})(2P{sup 3-})(P{sub 2}{sup 4-})(2O{sup 2-}). (Copyright copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Chemical sensors in natural water: peculiarities of behaviour of chalcogenide glass electrodes for determination of copper, lead and cadmium ions

International Nuclear Information System (INIS)

Seleznev, B.L.; Legin, A.V.; Vlasov, Yu.G.

1996-01-01

Specific features of chemical sensors (chalcogenide glass and crystal ion-selective electrodes) behaviour have been studied to determine copper (2), lead, cadmium and fluorine in the course of in situ measurements, including long-term uninterrupted testing, for solving the problem of inspection over natural water contamination. 16 refs., 3 figs., 2 tabs

Modeling of dispersion engineered chalcogenide rib waveguide for ultraflat mid-infrared supercontinuum generation in all-normal dispersion regime

Science.gov (United States)

Ahmad, H.; Karim, M. R.; Rahman, B. M. A.

2018-03-01

A rigorous numerical investigation has been carried out through dispersion engineering of chalcogenide rib waveguide for near-infrared to mid-infrared ultraflat broadband supercontinuum generation in all-normal group-velocity dispersion regime. We propose a novel design of a 1-cm-long air-clad rib waveguide which is made from {Ge}_{11.5} {As}_{24} {Se}_{64.5} chalcogenide glass as the core with either silica or {Ge}_{11.5} {As}_{24} {S}_{64.5} chalcogenide glass as a lower cladding separately. A broadband ultraflat supercontinuum spanning from 1300 to 1900 nm could be generated when pumped at 1.55 μ {m} with a low input peak power of 100 W. Shifting the pump to 2 μ {m}, the supercontinuum spectra extended in the mid-infrared region up to 3400 nm with a moderate-input peak power of 500 W. To achieve further extension in mid-infrared, we excite our optimized rib waveguide in both the anomalous and all-normal dispersion pumping regions at 3.1 μ {m} with a largest input peak power of 3 kW. In the case of anomalous dispersion region pumping, numerical analysis shows that supercontinuum spectrum can be extended in the mid-infrared up to 10 μ {m}, although this contains high spectral amplitude fluctuations over the entire bandwidth which limits the supercontinuum sources in the field of high precision measurement applications. On the other hand, by optimizing a rib waveguide geometry for pumping in all-normal dispersion region, we are able to generate a smooth and flat-top coherent supercontinuum spectrum with a moderate bandwidth spanning the wavelength range 2-5.5 μ {m} with less than 5 dB spectral fluctuation over the entire output bandwidth. Our proposed design is highly suitable for making on-chip SC light sources for a variety of applications such as biomedical imaging, and environmental and industrial sensing in the mid-infrared region.

Reactive ion etching of tellurite and chalcogenide waveguides using hydrogen, methane, and argon

International Nuclear Information System (INIS)

Vu, K. T.; Madden, S. J.

2011-01-01

The authors report in detail on the reactive plasma etching properties of tellurium and demonstrate a high quality etching process using hydrogen, methane, and argon. Very low loss planar ridge waveguides are demonstrated. Optical losses in tellurium dioxide waveguides below 0.1 dB/cm in most of the near infrared region of the electromagnetic spectrum and at 1550 nm have been achieved--the lowest ever reported by more than an order of magnitude and clearly suitable for planar integrated devices. The etch process is also shown to be suitable for chalcogenide glasses which may be of importance in applications such as phase change memory devices and nonlinear integrated optics.

Synthesis and characterization of low-valence actinide phosphide tellurides and ternary selenium-halide iridium complexes; Synthese und Charakterisierung niedervalenter Actinoidphosphidtelluride und ternaerer Selen-Halogenid-Komplexe des Iridiums

Energy Technology Data Exchange (ETDEWEB)

Stolze, Karoline

2016-04-07

The thesis on the synthesis and characterization of low-valence actinide phosphide tellurides and ternary selenium-halide iridium complexes includes two parts: a description of the experimental synthesis of UPTe and U2PTe2O and ThPTe and the synthesis of selenium-chloride iridium complexes and selenium-bromide iridium complexes. The characterization included X-ray diffraction and phase studies.

Effects of P/Ni ratio and Ni content on performance of γ-Al2O3-supported nickel phosphides for deoxygenation of methyl laurate to hydrocarbons

Science.gov (United States)

Zhang, Zhena; Tang, Mingxiao; Chen, Jixiang

2016-01-01

γ-Al2O3-supported nickel phosphides (mNi-Pn) were prepared by the TPR method and tested for the deoxygenation of methyl laurate to hydrocarbons. The effects of the P/Ni ratio (n = 1.0-2.5) and Ni content (m = 5-15 wt.%) in the precursors on their structure and performance were investigated. Ni/γ-Al2O3 was also studied for comparison. It was found that the formation of AlPO4 in the precursor inhibited the reduction of phosphate and so the formation of nickel phosphides. With increasing the P/Ni ratio and Ni content, the Ni, Ni3P, Ni12P5 and Ni2P phases orderly formed, accompanying with the increases of their particle size and the amount of weak acid sites (mainly due to P-OH group), while the CO uptake and the amount of medium strong acid sites (mainly related to Ni sites) reached maximum on 10%Ni-P1.5. In the deoxygenation reaction, compared with Ni/γ-Al2O3, the mNi-Pn catalysts showed much lower activities for decarbonylation, Csbnd C hydrogenolysis and methanation due to the ligand and ensemble effects of P. The conversion and the selectivity to n-C11 and n-C12 hydrocarbons achieved maximum on 10%Ni-P 2.0 for the 10%Ni-Pn catalysts and on 8%Ni-P2.0 for the mNi-P2.0 catalysts, while the turnover frequency (TOF) of methyl laurate mainly increased with the P/Ni ratio and Ni content. We propose that TOF was influenced by the nickel phosphide phases, the catalyst acidity and the particle size as well as the synergetic effect between the Ni site and acid site. Again, the hydrodeoxygenation pathway of methyl laurate was promoted with increasing P/Ni ratio and Ni content, ascribed to the phase change in the order of Ni, Ni3P, Ni12P5 and Ni2P in the prepared catalysts.

Phosphine Toxicity: A Story of Disrupted Mitochondrial Metabolism

Science.gov (United States)

2016-05-24

Phosphine and selected metal phosphides. Environ. Health Criteria 73. 5. Reeve, I. 2014. Estimation of exposure to persons in Califor- nia ...Gill. 2011. Aluminum phosphide poisoning: an unsolved riddle. J. Appl. Toxicol. 31: 499– 505 . 9. Lam, W.W., R.F. Toia & J. Casida. 1991. Oxidatively...Trends Biochem. Sci. 35: 505 –513. 43. Turrens, J.F. 2003. Mitochondrial formation of reactive oxy- gen species. J. Physiol. 552: 335–344. 44. Fridovich

Nonlinear Label-Free Biosensing With High Sensitivity Using As₂S₃ Chalcogenide Tapered Fiber

DEFF Research Database (Denmark)

Markos, Christos; Bang, Ole

2015-01-01

We demonstrate an experimentally feasible fiber design, which can act as a highly sensitive, label-free, and selective biosensor using the inherent high nonlinearity of an As2S3 chalcogenide tapered fiber. The surface immobilization of the fiber with an antigen layer can provide the possibility t......, this high sensitivity can be obtained using a low-power 1064-nm microchip laser....

Charged defects in chalcogenide vitreous semiconductors studied with combined Raman scattering and PALS methods

International Nuclear Information System (INIS)

Kavetskyy, T.; Vakiv, M.; Shpotyuk, O.

2007-01-01

A combination of Raman scattering and positron annihilation lifetime spectroscopy (PALS) techniques to study charged defects in chalcogenide vitreous semiconductors (ChVSs) was applied for the first time in this study. In the case of Ge 15.8 As 21 S 63.2 glass, it is found that the main radiation-induced switching of heteropolar Ge-S bonds into heteropolar As-S ones, previously detected by IR fast Fourier transform spectroscopy, can also be identified by Raman spectroscopy in the depolarized configuration. Results obtained by Raman scattering are in good agreement with PALS data for the investigated glass composition

Charged defects in chalcogenide vitreous semiconductors studied with combined Raman scattering and PALS methods

Energy Technology Data Exchange (ETDEWEB)

Kavetskyy, T.; Vakiv, M. [Lviv Institute of Materials of SRC ' Carat' , 202 Stryjska str., Lviv, UA-79031 (Ukraine); Shpotyuk, O. [Lviv Institute of Materials of SRC ' Carat' , 202 Stryjska str., Lviv, UA-79031 (Ukraine)], E-mail: shpotyuk@novas.lviv.ua

2007-04-15

A combination of Raman scattering and positron annihilation lifetime spectroscopy (PALS) techniques to study charged defects in chalcogenide vitreous semiconductors (ChVSs) was applied for the first time in this study. In the case of Ge{sub 15.8}As{sub 21}S{sub 63.2} glass, it is found that the main radiation-induced switching of heteropolar Ge-S bonds into heteropolar As-S ones, previously detected by IR fast Fourier transform spectroscopy, can also be identified by Raman spectroscopy in the depolarized configuration. Results obtained by Raman scattering are in good agreement with PALS data for the investigated glass composition.

Thermal Stability and Optical Activity of Erbium Doped Chalcogenide Glasses for Photonics

Science.gov (United States)

Tonchev, D.; Koughia, K.; Kasap, S. O.; Maeda, K.; Sakai, T.; Ikuta, J.; Ivanova, Z. G.

The glass transition and crystallization temperatures (T g , T c ), heat capacity, thermal stability and glass uniformity of GeSGa, GeSeGa, Ge(SeTe)Ga chalcogenide glasses doped with Er3+ by the addition of Er2S3 have been investigated by conventional differential scanning calorimetry (DSC) and Temperature-Modulated DSC (TMDSC). While some of the glasses have two crystallization peaks, these glasses were nonetheless optically actively and uniform. Essential optical properties have been evaluated, such as the photoluminescence (PL) intensity and lifetime as a function of the glass composition. We present typical results to emphasize some of the important characteristics of these systems and discuss trends within a glass system; and also highlight differences between glass systems.

Heterogeneous Bimetallic Phosphide/Sulfide Nanocomposite for Efficient Solar-Energy-Driven Overall Water Splitting.

Science.gov (United States)

Xin, Yanmei; Kan, Xiang; Gan, Li-Yong; Zhang, Zhonghai

2017-10-24

Solar-driven overall water splitting is highly desirable for hydrogen generation with sustainable energy sources, which need efficient, earth-abundant, robust, and bifunctional electrocatalysts for both oxygen evolution reaction (OER) and hydrogen evolution reaction (HER). Herein, we propose a heterogeneous bimetallic phosphide/sulfide nanocomposite electrocatalyst of NiFeSP on nickel foam (NiFeSP/NF), which shows superior electrocatalytic activity of low overpotentials of 91 mV at -10 mA cm -2 for HER and of 240 mV at 50 mA cm -2 for OER in 1 M KOH solution. In addition, the NiFeSP/NF presents excellent overall water splitting performance with a cell voltage as low as 1.58 V at a current density of 10 mA cm -2 . Combining with a photovoltaic device of a Si solar cell or integrating into photoelectrochemical (PEC) systems, the bifunctional NiFeSP/NF electrocatalyst implements unassisted solar-driven water splitting with a solar-to-hydrogen conversion efficiency of ∼9.2% and significantly enhanced PEC performance, respectively.

High pressure study of the zinc phosphide semiconductor compound in two different phases

International Nuclear Information System (INIS)

Mokhtari, Ali

2009-01-01

Electronic and structural properties of the zinc phosphide semiconductor compound are calculated at hydrostatic pressure using the full-potential all-electron linearized augmented plane wave plus local orbital (FP-LAPW+lo) method in both cubic and tetragonal phases. The exchange-correlation potential is treated by the generalized gradient approximation within the scheme of Perdew, Burke and Ernzerhof, GGA96 (1996 Phys. Rev. Lett. 77 3865). Also, the Engel and Vosko GGA formalism, EV-GGA (Engel and Vosko 1993 Phys. Rev. B 47 13164), is used to improve the band-gap results. Internal parameters are optimized by relaxing the atomic positions in the force directions using the Hellman-Feynman approach. The lattice constants, internal parameters, bulk modulus, cohesive energy and band structures have been calculated and compared to the available experimental and theoretical results. The structural calculations predict that the stable phase is tetragonal. The effects of hydrostatic pressure on the behavior of band parameters such as band-gap, valence bandwidths and internal gaps (the energy gap between different parts of the valence bands) are studied using both GGA96 and EV-GGA.

High pressure study of the zinc phosphide semiconductor compound in two different phases

Energy Technology Data Exchange (ETDEWEB)

Mokhtari, Ali [Simulation Laboratory, Department of Physics, Faculty of Science, Shahrekord University, PB 115, Shahrekord (Iran, Islamic Republic of)], E-mail: mokhtari@sci.sku.ac.ir

2009-07-08

Electronic and structural properties of the zinc phosphide semiconductor compound are calculated at hydrostatic pressure using the full-potential all-electron linearized augmented plane wave plus local orbital (FP-LAPW+lo) method in both cubic and tetragonal phases. The exchange-correlation potential is treated by the generalized gradient approximation within the scheme of Perdew, Burke and Ernzerhof, GGA96 (1996 Phys. Rev. Lett. 77 3865). Also, the Engel and Vosko GGA formalism, EV-GGA (Engel and Vosko 1993 Phys. Rev. B 47 13164), is used to improve the band-gap results. Internal parameters are optimized by relaxing the atomic positions in the force directions using the Hellman-Feynman approach. The lattice constants, internal parameters, bulk modulus, cohesive energy and band structures have been calculated and compared to the available experimental and theoretical results. The structural calculations predict that the stable phase is tetragonal. The effects of hydrostatic pressure on the behavior of band parameters such as band-gap, valence bandwidths and internal gaps (the energy gap between different parts of the valence bands) are studied using both GGA96 and EV-GGA.

Composite materials with metal oxide attached to lead chalcogenide nanocrystal quantum dots with linkers

Science.gov (United States)

Fuke, Nobuhiro; Koposov, Alexey Y; Sykora, Milan; Hoch, Laura

2014-12-16

Composite materials useful for devices such as photoelectrochemical solar cells include a substrate, a metal oxide film on the substrate, nanocrystalline quantum dots (NQDs) of lead sulfide, lead selenide, and lead telluride, and linkers that attach the NQDs to the metal oxide film. Suitable linkers preserve the 1s absorption peak of the NQDs. A suitable linker has a general structure A-B-C where A is a chemical group adapted for binding to a MO.sub.x and C is a chemical group adapted for binding to a NQD and B is a divalent, rigid, or semi-rigid organic spacer moiety. Other linkers that preserve the 1s absorption peak may also be used.

Synthesis and crystal chemistry of transuranium element chalcogenides. Contribution to the study of the 5f electron localization

International Nuclear Information System (INIS)

Damien, Daniel.

1976-09-01

The synthesis and crystal chemistry of Np, Pu, Am and Cm transuranium element chalcogenides are described. From plutonium, transuranium element chalcogenides exhibit the same crystal structure as their rare-earth homologues. The variations of the lattice constants of these compounds in terms of the atomic number are characterized by the lack of the 5f contraction and are interpreted by a localization of the 5f electrons depending upon the considered transuranium element, the nature of the ligand and the crystal structure. To compare the degree of magnitude of the 5f electron delocalization in various compounds, a delocalization scale is proposed based on a comparison between the molar volumes of actinide and isostructural lanthanide compounds. This scale provides a delocalization coefficient for each compound under study. Examination of these coefficients shows that the 5f electrons, in series of actinide compounds, become localized when going from neptunium to curium and that the delocalization process does not only depend upon overlaps between 5f-6d orbitals of neighbouring actinide atoms; the delocalization coefficients show the existence of a secondary delocalization effect due to overlaps between the p anion and f actinide orbitals which are more important for the Vb anion group (N, P, As, Sb) than for the Vib one (S,Se,Te) [fr

Immobilisation of manganese, cobalt and nickel by deep-sea-sediment microbial communities

Digital Repository Service at National Institute of Oceanography (India)

Sujith, P.P.; Das, A.; Mourya, B.S.; LokaBharathi, P.A.

and their various organic derivatives in nature are contained in the living biomass. For example, Razzell and Trussell (1963) [9] addressed the interaction of Thiobacillus spp with sulfide baring ores and their role in dissolution of oxides and release... of valuable metals. Likewise, Fortin et al (1994), Basnakova and Macaskie (1996) [10-11] presented the contribution of bacteria in the formation of sulfide and phosphide minerals by chemical complexing with available constituent sulfide and phosphide groups...

Mid-infrared volume diffraction gratings in IG2 chalcogenide glass: fabrication, characterization, and theoretical verification

Science.gov (United States)

Butcher, Helen L.; MacLachlan, David G.; Lee, David; Brownsword, Richard A.; Thomson, Robert R.; Weidmann, Damien

2018-02-01

Ultrafast laser inscription (ULI) has previously been employed to fabricate volume diffraction gratings in chalcogenide glasses, which operate in transmission mode in the mid-infrared spectral region. Prior gratings were manufactured for applications in astrophotonics, at wavelengths around 2.5 μm. Rugged volume gratings also have potential use in remote atmospheric sensing and molecular spectroscopy; for these applications, longer wavelength operation is required to coincide with atmospheric transparency windows (3-5 μm) and intense ro-vibrational molecular absorption bands. We report on ULI gratings inscribed in IG2 chalcogenide glass, enabling access to the full 3-5 μm window. High-resolution broadband spectral characterization of fabricated gratings was performed using a Fourier transform spectrometer. The zeroth order transmission was characterized to derive the diffraction efficiency into higher orders, up to the fourth orders in the case of gratings optimized for first order diffraction at 3 μm. The outcomes imply that ULI in IG2 is well suited for the fabrication of volume gratings in the mid infrared, providing the impact of the ULI fabrication parameters on the grating properties are well understood. To develop this understanding, grating modeling was conducted. Parameters studied include grating thickness, refractive index modification, and aspect ratio of the modulation achieved by ULI. Knowledge of the contribution and sensitivity of these parameters was used to inform the design of a 4.3 μm grating expected to achieve > 95% first order efficiency. We will also present the characterization of these latest mid-infrared diffraction gratings in IG2.

Thermal analysis of chalcogenide glasses of the system (As/sub/2Se/sub/3)/sub/(1-x):(Tl/sub/2Se)/sub/x

International Nuclear Information System (INIS)

Majid, C.A.

1987-01-01

In this paper differential thermal analysis (DTA) measurements of chalcogenide glasses of the system (As/sub/2Se/sub/3)/sub/(1-x): (Tl/sub/2Se)/sub/x, with x=0, 0.125, 0.25 and 0.50 are reported. The glass-forming tendencies of these materials have been calculated. The glass-forming tendency of As/sub/2Se/sub/3 has been found to be the highest among the member glasses of this family of chalcogenides. It was found that the glass-forming tendency of As/sub/2Se/sub/3 decreasing gradually at the Tl/sub/2/Se concentration increases. Tl/sub/2Se additions lower the glass transition temperature T/sub/q and the area under the endothermic peak for glass transition temperature, suggesting a tendency for relatively weaker bonding and hence less stability of Tl-rich glass compositions. These studies show that Tl/sub/2Se concentrations result in glasses with progressively higher crystallization tendencies. (author)

Thulium pumped mid-infrared 0.9–9μm supercontinuum generation in concatenated fluoride and chalcogenide glass fibers

DEFF Research Database (Denmark)

Kubat, Irnis; Petersen, Christian Rosenberg; Møller, Uffe Visbech

2014-01-01

of ZBLAN spanning the 0.9–4.1μm SC at the −30dB level. The ZBLAN fiber SC is then coupled into 10cm of As2Se3 chalcogenide Microstructured Optical Fiber (MOF) designed to have a zero-dispersion wavelength (λZDW) significantly below the 4.1μm InfraRed (IR) edge of the ZBLAN fiber SC, here 3.55μm...

Structural features of spin-coated thin films of binary As{sub x}S{sub 100−x} chalcogenide glass system

Energy Technology Data Exchange (ETDEWEB)

Cook, J. [Austin Peay State University, Clarksville, TN 37075 (United States); Slang, S. [Faculty of Chemical Technology, University of Pardubice, 53210 Pardubice (Czech Republic); Golovchak, R. [Austin Peay State University, Clarksville, TN 37075 (United States); Jain, H. [International Materials Institute for New Functionality in Glass, Lehigh University, Bethlehem, PA 18015 (United States); Vlcek, M. [Faculty of Chemical Technology, University of Pardubice, 53210 Pardubice (Czech Republic); Kovalskiy, A., E-mail: kovalskyya@apsu.edu [Austin Peay State University, Clarksville, TN 37075 (United States)

2015-08-31

Spin-coating technology offers a convenient method for fabricating photostable chalcogenide glass thin films that are especially attractive for applications in IR optics. In this paper we report the structure of spin-coated As{sub x}S{sub 100−x} (x = 30, 35, 40) thin films as determined using high resolution X-ray photoelectron spectroscopy (XPS) and Raman spectroscopy, especially in relation to composition (i.e. As/S ratio) and preparation process variables. It was observed that As atoms during preparation have a tendency to precipitate out in close to stoichiometric compositions. The mechanism of bonding between the inorganic matrix and organic residuals is discussed based on the experimental data. A weak interaction between S ions and amine-based clusters is proposed as the basis of structural organization of the organic–inorganic interface. - Highlights: • As–S spin-coated chalcogenide thin films with different As/S were fabricated. • XPS measurements support the cluster-like structure of spin-coated films. • As{sub 2}O{sub 3} was confirmed as the composition of precipitate formed during dissolution. • Lack of As–As bonds explains the observed photostability of the thin films.

Valence band structure of binary chalcogenide vitreous semiconductors by high-resolution XPS

International Nuclear Information System (INIS)

Kozyukhin, S.; Golovchak, R.; Kovalskiy, A.; Shpotyuk, O.; Jain, H.

2011-01-01

High-resolution X-ray photoelectron spectroscopy (XPS) is used to study regularities in the formation of valence band electronic structure in binary As x Se 100−x , As x S 100−x , Ge x Se 100−x and Ge x S 100−x chalcogenide vitreous semiconductors. It is shown that the highest occupied energetic states in the valence band of these materials are formed by lone pair electrons of chalcogen atoms, which play dominant role in the formation of valence band electronic structure of chalcogen-rich glasses. A well-expressed contribution from chalcogen bonding p electrons and more deep s orbitals are also recorded in the experimental valence band XPS spectra. Compositional dependences of the observed bands are qualitatively analyzed from structural and compositional points of view.

Valence band structure of binary chalcogenide vitreous semiconductors by high-resolution XPS

Energy Technology Data Exchange (ETDEWEB)

Kozyukhin, S., E-mail: sergkoz@igic.ras.ru [Russian Academy of Science, Institute of General and Inorganic Chemistry (Russian Federation); Golovchak, R. [Lviv Scientific Research Institute of Materials of SRC ' Carat' (Ukraine); Kovalskiy, A. [Lehigh University, Department of Materials Science and Engineering (United States); Shpotyuk, O. [Lviv Scientific Research Institute of Materials of SRC ' Carat' (Ukraine); Jain, H. [Lehigh University, Department of Materials Science and Engineering (United States)

2011-04-15

High-resolution X-ray photoelectron spectroscopy (XPS) is used to study regularities in the formation of valence band electronic structure in binary As{sub x}Se{sub 100-x}, As{sub x}S{sub 100-x}, Ge{sub x}Se{sub 100-x} and Ge{sub x}S{sub 100-x} chalcogenide vitreous semiconductors. It is shown that the highest occupied energetic states in the valence band of these materials are formed by lone pair electrons of chalcogen atoms, which play dominant role in the formation of valence band electronic structure of chalcogen-rich glasses. A well-expressed contribution from chalcogen bonding p electrons and more deep s orbitals are also recorded in the experimental valence band XPS spectra. Compositional dependences of the observed bands are qualitatively analyzed from structural and compositional points of view.

Laser ablation synthesis of arsenic-phosphide Asm Pn clusters from As-P mixtures. Laser desorption ionisation with quadrupole ion trap time-of-flight mass spectrometry: The mass spectrometer as a synthesizer.

Science.gov (United States)

Kubáček, Pavel; Prokeš, Lubomír; Pamreddy, Annapurna; Peña-Méndez, Eladia María; Conde, José Elias; Alberti, Milan; Havel, Josef

2018-05-30

Only a few arsenic phosphides are known. A high potential for the generation of new compounds is offered by Laser Ablation Synthesis (LAS) and when Laser Desorption Ionization (LDI) is coupled with simultaneous Time-Of-Flight Mass Spectrometry (TOFMS), immediate identification of the clusters can be achieved. LAS was used for the generation of arsenic phosphides via laser ablation of phosphorus-arsenic mixtures while quadrupole ion trap time-of-flight mass spectrometry (QIT-TOFMS) was used to acquire the mass spectra. Many new As m P n ± clusters (479 binary and 369 mono-elemental) not yet described in the literature were generated in the gas phase and their stoichiometry determined. The likely structures for some of the observed clusters arbitrary selected (20) were computed by density functional theory (DFT) optimization. LAS is an advantageous approach for the generation of new As m P n clusters, while mass spectrometry was found to be an efficient technique for the determination of cluster stoichiometry. The results achieved might inspire the synthesis of new materials. Copyright © 2018 John Wiley & Sons, Ltd.

A structural study of the pseudo-binary mercury chalcogenide alloy HgSe sub 0 sub . sub 7 S sub 0 sub . sub 3 at high pressure

CERN Document Server

Kozlenko, D P; Hull, S; Knorr, K; Savenko, B N; Shchennikov, V V; Voronin, V I

2002-01-01

The structure of the pseudo-binary mercury chalcogenide alloy HgSe sub 0 sub . sub 7 S sub 0 sub . sub 3 has been studied by means of X-ray and neutron powder diffraction at pressure up to 8.5 GPa. A phase transition from the cubic zinc blende structure to the hexagonal cinnabar structure was observed at P approx 1 GPa. The obtained structural parameters were used for the analysis of the geometrical relationship between the zinc blende and the cinnabar phases. The zinc blende-cinnabar phase transition is discussed in the framework of the Landau theory of phase transitions. It was found that the possible order parameter for the structural transformation is the spontaneous strain e sub 4. This assignment agrees with previously observed high pressure behaviour of the elastic constants of other mercury chalcogenides

Mid-infrared optical properties of chalcogenide glasses within tin-antimony-selenium ternary system.

Science.gov (United States)

Lin, Ruiqiang; Chen, Feifei; Zhang, Xiaoyu; Huang, Yicong; Song, Baoan; Dai, Shixun; Zhang, Xianghua; Ji, Wei

2017-10-16

In this work, we investigated the mid-infrared (MIR) optical properties of selenide (Se-based) chalcogenide glasses (ChGs) within an As- and Ge-free system, namely the environment-friendly and low-cost tin-antimony-selenium (Sn-Sb-Se, SSS) ternary system, which has not been systematically studied to the best of our knowledge. As compared to ChGs within those conventional Se-based systems, SSS ChGs were found to exhibit extended infrared transmittance range as well as larger linear refractive index (n 0 ). Femtosecond Z-scan measurements show the presence of evident three-photon absorption from Urbach absorption of the SSS ChGs at MIR wavelength, which resonantly enhanced the nonlinear refractive behavior and resulted in large nonlinear refractive index (n 2 ).

Estimating optical feedback from a chalcogenide fiber in mid-infrared quantum cascade lasers

Directory of Open Access Journals (Sweden)

L. Jumpertz

2016-10-01

Full Text Available The amount of optical feedback originating from a chalcogenide fiber used to couple light from a mid-infrared quantum cascade laser is evaluated experimentally. Threshold reduction measurements on the fibered laser, combined with an analytical study of a rate equations model of the laser under optical feedback, allow estimating the feedback strength between 11% and 15% depending on the fiber cleavage quality. While this remains below the frontier of the chaotic regime, it is sufficient to deeply modify the optical spectrum of a quantum cascade laser. Hence for applications such as gas spectroscopy, where the shape of the optical spectrum is of prime importance, the use of mid-infrared optical isolators may be necessary for fibered quantum cascade lasers to be fully exploited.

Laser ablation synthesis of new gold phosphides using red phosphorus and nanogold as precursors. Laser desorption ionisation time-of-flight mass spectrometry.

Science.gov (United States)

Panyala, Nagender Reddy; Peña-Méndez, Eladia María; Havel, Josef

2012-05-15

Gold phosphides show unique optical or semiconductor properties and there are extensive high technology applications, e.g. in laser diodes, etc. In spite of the various AuP structures known, the search for new materials is wide. Laser ablation synthesis is a promising screening and synthetic method. Generation of gold phosphides via laser ablation of red phosphorus and nanogold mixtures was studied using laser desorption ionisation time-of-flight mass spectrometry (LDI TOFMS). Gold clusters Au(m)(+) (m = 1 to ~35) were observed with a difference of one gold atom and their intensities were in decreasing order with respect to m. For P(n)(+) (n = 2 to ~111) clusters, the intensities of odd-numbered phosphorus clusters are much higher than those for even-numbered phosphorus clusters. During ablation of P-nanogold mixtures, clusters Au(m)(+) (m = 1-12), P(n)(+) (n = 2-7, 9, 11, 13-33, 35-95 (odd numbers)), AuP(n)(+) (n = 1, 2-88 (even numbers)), Au(2)P(n)(+) (n = 1-7, 14-16, 21-51 (odd numbers)), Au(3)P(n)(+) (n = 1-6, 8, 9, 14), Au(4)P(n)(+) (n = 1-9, 14-16), Au(5)P(n)(+) (n = 1-6, 14, 16), Au(6)P(n)(+) (n = 1-6), Au(7)P(n)(+) (n = 1-7), Au(8)P(n)(+) (n = 1-6, 8), Au(9)P(n)(+) (n = 1-10), Au(10)P(n)(+) (n = 1-8, 15), Au(11)P(n)(+) (n = 1-6), and Au(12)P(n)(+) (n = 1, 2, 4) were detected in positive ion mode. In negative ion mode, Au(m)(-) (m = 1-5), P(n)(-) (n = 2, 3, 5-11, 13-19, 21-35, 39, 41, 47, 49, 55 (odd numbers)), AuP(n)(-) (n = 4-6, 8-26, 30-36 (even numbers), 48), Au(2)P(n)(-) (n = 2-5, 8, 11, 13, 15, 17), A(3) P(n)(-) (n = 6-11, 32), Au(4)P(n)(-) (n = 1, 2, 4, 6, 10), Au(6)P(5)(-), and Au(7)P(8)(-) clusters were observed. In both modes, phosphorus-rich Au(m)P(n) clusters prevailed. The first experimental evidence for formation of AuP(60) and gold-covered phosphorus Au(12)P(n) (n = 1, 2, 4) clusters is given. The new gold phosphides generated might inspire synthesis of

Synthesis, Characterization, and Properties of the Two-Dimensional Chalcogenides: Monolayers, Alloys, and Heterostructures

Science.gov (United States)

Cain, Jeffrey D.

Inspired by the triumphs of graphene, and motivated by its limitations, the science and engineering community is rapidly exploring the landscape of other layered materials in their atomically-thin forms. Dominating this landscape are the layered chalcogenides; diverse in chemistry, crystal structure, and properties, there are well over 100 primary members of this material family. Driven by quantum confinement, single layers (or few, in some cases) of these materials exhibit electronic, optical, and mechanical properties that diverge dramatically from their bulk counterparts. While initially isolated in monolayer form via mechanical exfoliation, the field of two-dimensional (2D) materials is being forced evolve to more scalable and reliable methods. Focusing on the chalcogenides (e.g. MoS2, Bi 2Se3, etc.), this dissertation introduces and mechanistically examines multiple novel synthetic approaches for the direct growth of monolayers, heterostructures, and alloys with the desired quality, reproducibility and generality. The first methods described in this thesis are physical vapor transport (PVT) and evaporative thinning (ET): a facile, top-down synthesis approach for creating ultrathin specimens of layered materials down to the two-dimensional limit. Evaporative thinning, applied in this study to the fabrication of A2X3 (Bi2Se3 and Sb2Te3) monolayers, is based on the controlled evaporation of material from initially thick specimens until the 2D limit is reached. The resultant flakes are characterized with a suite of imaging and spectroscopic techniques and the mechanism of ET is investigated via in-situ heating within a transmission electron microscope. Additionally, the basic transport properties of the resultant flakes are probed. The growth of ultrathin GeSe flakes is explored using PVT and the material's basic structure, properties, and stability are addressed. Second, oxide precursor based chemical vapor deposition (CVD) is presented for the direct growth of

Synthesis and properties of new CdSe-AgI-As{sub 2}Se{sub 3} chalcogenide glasses

Energy Technology Data Exchange (ETDEWEB)

Kassem, M. [Univ Lille Nord de France, F-59000 Lille (France); ULCO, LPCA, EAC CNRS 4493 F-59140 Dunkerque (France); Le Coq, D., E-mail: david.lecoq@univ-littoral.fr [Univ Lille Nord de France, F-59000 Lille (France); ULCO, LPCA, EAC CNRS 4493 F-59140 Dunkerque (France); Fourmentin, M.; Hindle, F.; Bokova, M.; Cuisset, A.; Masselin, P.; Bychkov, E. [Univ Lille Nord de France, F-59000 Lille (France); ULCO, LPCA, EAC CNRS 4493 F-59140 Dunkerque (France)

2011-02-15

Research highlights: {yields} Determination of the glass-forming region in the pseudo-ternary CdSe-AgI-As{sub 2}Se{sub 3} system. {yields} Characterization of macroscopic properties of the new CdSe-AgI-As{sub 2}Se{sub 3} glasses. {yields} Far infrared transmission of chalcogenide glasses. {yields} Characterization of the total conductivity of CdSe-AgI-As{sub 2}Se{sub 3} glasses. -- Abstract: The glass-forming region in the pseudo-ternary CdSe-AgI-As{sub 2}Se{sub 3} system was determined. Measurements including differential scanning calorimetry (DSC), density, and X-ray diffraction were performed. The effect resulting from the addition of CdSe or AgI has been highlighted by examining three series of different base glasses. The characteristic temperatures of the glass samples, including glass transition (T{sub g}), crystallisation (T{sub x}), and melting (T{sub m}) temperatures are reported and used to calculate their {Delta}T = T{sub x} - T{sub g} and their Hruby, H{sub r} = (T{sub x} - T{sub g})/(T{sub m} - T{sub x}), criteria. Evolution of the total electrical conductivity {sigma} and the room temperature conductivity {sigma}{sub 298} was also studied. The terahertz transparency domain in the 50-600 cm{sup -1} region was pointed for different chalcogenide glasses (ChGs) and the potential of the THz spectroscopy was suggested to obtain structural information on ChGs.

Comparative studies on mitochondrial electron transport chain complexes of Sitophilus zeamais treated with allyl isothiocyanate and calcium phosphide.

Science.gov (United States)

Zhang, Chao; Wu, Hua; Zhao, Yuan; Ma, Zhiqing; Zhang, Xing

2016-01-01

With Sitophilus zeamais as the target organism, the present study for the first time attempted to elucidate the comparative effects between allyl isothiocyanate (AITC) and calcium phosphide (Ca3P2), exposure on mitochondrial electron transport chain (ETC.) complex I & IV and their downstream effects on enzymes relevant to reactive oxygen species (ROS). In vivo, both AITC and Ca3P2 inhibited complex I and IV with similar downstream effects. In contrast with Ca3P2, the inhibition of complex I caused by AITC was dependent on time and dose. In vitro, AITC inhibited complex IV more significantly than complex I. These results indicate that mitochondrial complex IV is the primary target of AITC, and that complex I is another potential target. Copyright © 2015 Elsevier B.V. All rights reserved.

Open-framework micro- and meso-structured chalcogenides and their ion exchange properties

Science.gov (United States)

Ding, Nan

2007-12-01

Micro- and meso- structured chalcogenides with open inorganic framework have driven tremendous attention and intense work during the last two decades. They belong to a special category of materials possessing multifunctional potential due to their large void space within the atomic skeletons and the novel physical properties brought by the chalcogen elements. The latter are not generally present in typical open-framework oxides. In addition, because of the different size and electronegativity of the chalcogen elements compared to oxygen, many new structural properties were expected to emerge when the work in this dissertation was undertaken. The major body of this work involves group 13 (e.g. Ga, In) or 14 (e.g. Ge, Sn) elements with chalcogen. Transition metals also are incorporated in a few examples. The first two groups of compounds reported belong to the latter case. Unique structure types have been obtained under hydrothermal conditions via the combination of M (M = Zn, Cd), Sn and Q (Q = S, Se) to build microporous A6M4Sn3Q13 (A = K, Rb) based on truncated penta-supertrahedral cluster [M4Sn4Q 17]10-. More surprisingly, the protonation of K 6Cd4Sn3Se13 led to another new compound K14Cd15Sn12Se46 which possesses a labyrinth-like void space within the compact [Cd15Sn12Se 46]14- anionic skeleton. This structural characteristic leads to an unusual stability of the compound in acid. Both the K6Cd 4Sn3Se13 and K14Cd15Sn 12Se46 are fast ion-exchangers and their K+ ions can be replaced by other alkali metal cations and even H+ for the latter. Other work reported was aimed at the heavier analogs of alumiophosphate, i.e. the open-frameworks based on group 13 (Ga, In), 15 (Sb) and chalcogen elements. Two groups of chalcoantimonates with two-dimensional architectures [M5Sb6S19]5- and polymorphic [M2Sb2Q7]2- (M = Ga, In; Q = S, Se) were obtained. With the help of bulky organic structure-directing agents, large windows were formed in some of these anionic slabs. The windows

Application of positron annihilation lifetime technique for {gamma}-irradiation stresses study in chalcogenide vitreous semiconductors

Energy Technology Data Exchange (ETDEWEB)

Shpotyuk, O.; Golovchak, R.; Kovalskiy, A. [Scientific Research Company ' ' Carat' ' , Stryjska str. 20279031 Lviv (Ukraine); Filipecki, J.; Hyla, M. [Physics Institute, Pedagogical University, Al. Armii Krajowej 13/1542201 Czestochowa (Poland)

2002-08-01

The influence of {gamma}-irradiation on the positron annihilation lifetime spectra in chalcogenide vitreous semiconductors of As-Ge-S system has been analysed. The correlations between lifetime data, structural features and chemical compositions of glasses have been discussed. The observed lifetime components are connected with bulk positron annihilation and positron annihilation on various native and {gamma}-induced open volume defects. It is concluded that after {gamma}-irradiation of investigated materials the {gamma}-induced microvoids based on S{sub 1}{sup -}, As{sub 2}{sup -}, and Ge{sub 3}{sup -} coordination defects play the major role in positron annihilation processes. (Abstract Copyright[2002], Wiley Periodicals, Inc.)

Characterization of phase change Ga{sub 15}Se{sub 77}Ag{sub 8} chalcogenide thin films by laser-irradiation

Energy Technology Data Exchange (ETDEWEB)

Alvi, M.A., E-mail: alveema@hotmail.com [Department of Physics, Faculty of Science, King Abdulaziz University, Jeddah 21589 (Saudi Arabia); Zulfequar, M. [Department of Physics, Jamia Millia Islamia, New Delhi 110025 (India); Al-Ghamdi, A.A. [Department of Physics, Faculty of Science, King Abdulaziz University, Jeddah 21589 (Saudi Arabia)

2013-02-15

Highlights: Black-Right-Pointing-Pointer Effect of laser-irradiation on structure and optical band gap has been investigated. Black-Right-Pointing-Pointer The amorphous nature has been verified by X-ray diffraction and DSC measurements. Black-Right-Pointing-Pointer Laser-irradiation causes a decrease in optical band gap in Ga{sub 15}Se{sub 77}Ag{sub 8} thin films. Black-Right-Pointing-Pointer The decrease in optical band gap can be interpreted on the basis of amorphous-crystalline phase transformation. Black-Right-Pointing-Pointer Optical absorption data showed that the rules of the non-direct transitions predominate. - Abstract: Phase change Ga{sub 15}Se{sub 77}Ag{sub 8} chalcogenide thin films were prepared by thermal evaporation technique. Thin films were then irradiated by Transverse Electrical Excitation at Atmospheric Pressure (TEA) nitrogen laser for different time intervals. The X-ray structural characterization revealed the amorphous nature of as-prepared films while the laser irradiated films show the polycrystalline nature. Field Emission Scanning Electron Microscope (FESEM) has been used to study the structural changes. The results are discussed in terms of the structural aspects and amorphous to crystalline phase change in Ga{sub 15}Se{sub 77}Ag{sub 8} chalcogenide thin films. The observed changes are associated with the interaction of the incident photon and the lone-pairs electrons which affects the band gap of the Ga{sub 15}Se{sub 77}Ag{sub 8} chalcogenide thin films. The optical constants of these thin films are measured by using the absorption spectra measurements as a function of photon energy in the wavelength region 400-1100 nm. It is found that the optical band gap decreases while the absorption coefficient and extinction coefficient increases with increasing the laser-irradiation time. The decrease in the optical band gap has been explained on the basis of change in nature of films, from amorphous to polycrystalline state. The dc

Preparation and intercalation study of ternary transition elements chalcogenides AxMXn

International Nuclear Information System (INIS)

Kassem, M.

1999-01-01

The crystalline powders of transition elements chalcogenides have been prepared by solid-solid reaction method starting from elemental powders in evacuated and sealed quartz tubes heated at various temperatures depending on the compound to be prepared. The structures and composition of the obtained compounds have been studied by X-ray diffraction and X-ray fluorescence techniques. Intercalation compounds Co x MX 2 have been obtained by heating the powder with elemental cobalt at 500 Centigrade. The results of the structural studies show that the intercalation of cobalt is a regular phenomena and the cobalt atoms play the role of staples for the layers constructing the crystalline structure of starting materials. This stapling phenomena is accompanied by changes in distance between the layers and therefore changes in the length of bonds between the elements of compound. The changes in the length of bonds have been confirmed by the results of FTIR studies.(author)

Infrared waveguide fabrications with an E-beam evaporated chalcogenide glass film

KAUST Repository

Yang, Xiaoming

2014-12-12

Chalcogenide glasses have a variety of unique optical properties due to the intrinsic structural flexibility and bonds metastability. They are desirable materials for many applications, such as infrared communication sensors, holographic grating, optical imaging, and ultrafast nonlinear optic devices. Here, we introduce a novel electron-beam evaporation process to deposit the good quality arsenic trisulfide (As2S3) films and then the As2S3 films were used to fabricate the As2S3 waveguides with three approaches. The first method is photoresist lift-off. Because of the restriction of thermal budget of photoresist, the As2S3 film must be deposited at the room temperature. The second one is the silicon dioxide lift-off process on sapphire substrates, in which the As2S3 film could be evaporated at a high temperature (>180 °C) for better film quality. The third one is the plasma etching process with a metal protective thin layer in the pattern development process.

A new method for synthesis of As-Te chalcogenide films

Science.gov (United States)

Mochalov, Leonid; Nezhdanov, Aleksey; Usanov, Dmitry; Markelov, Aleksey; Trushin, Vladimir; Chidichimo, Giuseppe; De Filpo, Giovanni; Gogova, Daniela; Mashin, Aleksandr

2017-11-01

A novel Plasma Enhanced Chemical Vapor Deposition method for synthesis of amorphous AsxTe100-x (31 ≤ x ≤ 49) films is demonstrated. The innovative process has been developed in a non-equilibrium low-temperature argon plasma under reduced pressure, employing for the first time volatile As and Te as precursors. Utilization of inorganic precursors, in contrast to the typically used in CVD metal-organic precursors, has given us the chance to achieve ≿halcogenide As-Te films of very high quality and purity. Phase and structural evolution of the As-Te system, based on equilibrium coexistence of two phases (AsTe and As2Te3) has been studied. The dependence of structure and optical bandgap of the chalcogenide materials on their composition was established. The newly developed process is cost-effective and enables deposition of As-Te films with a thickness ranging from 10 nm to 10 μm, the latter is highly desireable for one-mode planar waveguides applications and in other components of integral optics.

Photo-Darkening Kinetics and Structural Anisotropic Modifications in the Chalcogenide Glass Arsenic Trisulfide: a Study of Kinetic X-Ray Absorption Spectroscopy

Science.gov (United States)

Lee, Jay Min

1990-08-01

The purpose of the study is to investigate the mechanisms involved with photo-induced atomic structural modifications in the chalcogenide glass As_2 S_3. This glass exhibits the reversible effects of photo-darkening followed by thermal bleaching. We observed the time behavior of photo-induced properties under the influence of linearly polarized band -gap light. In a macroscopic optical investigation, we monitor optical changes in the photo-darkening process, and in a local structural probe we study kinetic (or time -resolved dispersive) x-ray absorption spectroscopy. Our observations center on kinetic phenomena and structural modifications induced by polarized excitation of lone-pair orbitals in the chalcogenide glass. Experimental results include the following observations: (i) The polarity of the optically induced anisotropy is critically dependent on the intensity and the polarization of the band-gap irradiation beam. (ii) The near edge peak height in x-ray absorption spectra shows subtle but sensitive change during the photo-darkening process. (iii) Photon intensity dependent dichroic kinetics reflect a connection between the optically probed macroscopic property and the x-ray probed local anisotropic structure. Analysis of the x-ray absorption results includes a computer simulation of the polarized absorption spectra. These results suggest that specific structural units tend to orient themselves with respect to the photon polarization. A substantial part of the analysis involves a major effort in dealing with the x-ray kinetic data manipulation and the experimental difficulties caused by a synchrotron instability problem. Based on our observations, we propose a possible mechanism for the observed photo-structural modifications. Through a model of computer relaxed photo-darkening kinetics, we support the notion that a twisting of a specific intermediate range order structure is responsible for local directional variations and global network distortions. In the

Chronological change of electrical resistance in GeCu2Te3 amorphous film induced by surface oxidation

International Nuclear Information System (INIS)

Saito, Yuta; Shindo, Satoshi; Sutou, Yuji; Koike, Junichi

2014-01-01

Unusual chronological electrical resistance change behavior was investigated for amorphous GeCu 2 Te 3 phase change material. More than a 1 order decrease of electrical resistance was observed in the air even at room temperature. The resistance of the amorphous film gradually increased with increasing temperature and then showed a drop upon crystallization. Such unusual behavior was attributed to the oxidation of the amorphous GeCu 2 Te 3 film. From the compositional depth profile measurement, the GeCu 2 Te 3 film without any capping layer was oxidized in air at room temperature and the formed oxide was mainly composed of germanium oxide. Consequently, a highly-conductive Cu-rich layer was formed in the vicinity of the surface of the film, which reduced the total resistance of the film. The present results could provide insight into the chronological change of electrical resistance in amorphous chalcogenide materials, indicating that not only relaxation of the amorphous, but also a large atomic diffusion contributes to the chronological resistance change. (paper)

Rational Design of Zinc Phosphide Heterojunction Photovoltaics

Science.gov (United States)

Bosco, Jeffrey Paul

The prospect of terawatt-scale electricity generation using a photovoltaic (PV) device places strict requirements on the active semiconductor optoelectronic properties and elemental abundance. After reviewing the constraints placed on an ``earth-abundant'' solar absorber, we find zinc phosphide (α-Zn 3P2) to be an ideal candidate. In addition to its near-optimal direct band gap of 1.5 eV, high visible-light absorption coefficient (>10. 4cm-1), and long minority-carrier diffusion length (>5 μm), Zn3P 2 is composed of abundant Zn and P elements and has excellent physical properties for scalable thin-film deposition. However, to date, a Zn 3P2 device of sufficient efficiency for commercial applications has not been demonstrated. Record efficiencies of 6.0% for multicrystalline and 4.3% for thin-film cells have been reported, respectively. Performance has been limited by the intrinsic p-type conductivity of Zn3P 2 which restricts us to Schottky and heterojunction device designs. Due to our poor understanding of Zn3P2 interfaces, an ideal heterojunction partner has not yet been found. The goal of this thesis is to explore the upper limit of solar conversion efficiency achievable with a Zn3P2 absorber through the design of an optimal heterojunction PV device. To do so, we investigate three key aspects of material growth, interface energetics, and device design. First, the growth of Zn3P2 on GaAs(001) is studied using compound-source molecular-beam epitaxy (MBE). We successfully demonstrate the pseudomorphic growth of Zn3P2 epilayers of controlled orientation and optoelectronic properties. Next, the energy-band alignments of epitaxial Zn3P2 and II-VI and III-V semiconductor interfaces are measured via high-resolution x-ray photoelectron spectroscopy in order to determine the most appropriate heterojunction partner. From this work, we identify ZnSe as a nearly ideal n-type emitter for a Zn3P 2 PV device. Finally, various II-VI/Zn3P2 heterojunction solar cells designs are

Study of grown-in and radiation-induced defects in indium phosphide

International Nuclear Information System (INIS)

Shaban, E.H.

1986-01-01

This research is focused on (1) conducting detailed theoretical and experimental study of grown-in and radiation-induced defects in liquid encapsulated Czohralski (LEC) grown, Zn-doped P-type indium phosphide (InP), (2) identifying the physical origin of the defects detected using Deep Level Transient Spectroscopy (DLTS) method, and (3) and developing a second-order model to interpret the presence of nonexponential capacitance transients in DLTS method. Analysis of grown-in and radiation-induced defects in P-type InP is undertaken. The main research results are summarized as follows: (1) DLTS analysis of grown-in defects in liquid LEC-grown, Zn-doped, P-type InP is made in this study. A single-hole trap of E/sub v/ + 0.52 eV is detected with a trap density of 1.8 x 10 15 cm -3 . The physical origin of this hole trap is attributed to a phosphorus vacancy or phosphorus interstitial-related defect. (2) One-MeV electron-irradiated P-type InP introduced two new hole traps, namely E/sub v/ + 0.34 and E/sub v/ + 0.58 eV with introduction rates (dN/sub T/d phi) of 0.4 and 1.2 per electron-cm, respectively. (3) A theoretical model is developed to interpret nonexponential capacitance transients in a deep-level transient spectroscopy method when the capture process competes with the dominant thermal-emission process

Observation of three-component fermions in the topological semimetal molybdenum phosphide

Science.gov (United States)

Lv, B. Q.; Feng, Z.-L.; Xu, Q.-N.; Gao, X.; Ma, J.-Z.; Kong, L.-Y.; Richard, P.; Huang, Y.-B.; Strocov, V. N.; Fang, C.; Weng, H.-M.; Shi, Y.-G.; Qian, T.; Ding, H.

2017-06-01

In quantum field theory, Lorentz invariance leads to three types of fermion—Dirac, Weyl and Majorana. Although the existence of Weyl and Majorana fermions as elementary particles in high-energy physics is debated, all three types of fermion have been proposed to exist as low-energy, long-wavelength quasiparticle excitations in condensed-matter systems. The existence of Dirac and Weyl fermions in condensed-matter systems has been confirmed experimentally, and that of Majorana fermions is supported by various experiments. However, in condensed-matter systems, fermions in crystals are constrained by the symmetries of the 230 crystal space groups rather than by Lorentz invariance, giving rise to the possibility of finding other types of fermionic excitation that have no counterparts in high-energy physics. Here we use angle-resolved photoemission spectroscopy to demonstrate the existence of a triply degenerate point in the electronic structure of crystalline molybdenum phosphide. Quasiparticle excitations near a triply degenerate point are three-component fermions, beyond the conventional Dirac-Weyl-Majorana classification, which attributes Dirac and Weyl fermions to four- and two-fold degenerate points, respectively. We also observe pairs of Weyl points in the bulk electronic structure of the crystal that coexist with the three-component fermions. This material thus represents a platform for studying the interplay between different types of fermions. Our experimental discovery opens up a way of exploring the new physics of unconventional fermions in condensed-matter systems.

Mid-infrared fiber-coupled supercontinuum spectroscopic imaging using a tapered chalcogenide photonic crystal fiber

Science.gov (United States)

Rosenberg Petersen, Christian; Prtljaga, Nikola; Farries, Mark; Ward, Jon; Napier, Bruce; Lloyd, Gavin Rhys; Nallala, Jayakrupakar; Stone, Nick; Bang, Ole

2018-02-01

We present the first demonstration of mid-infrared spectroscopic imaging of human tissue using a fiber-coupled supercontinuum source spanning from 2-7.5 μm. The supercontinuum was generated in a tapered large mode area chalcogenide photonic crystal fiber in order to obtain broad bandwidth, high average power, and single-mode output for good imaging properties. Tissue imaging was demonstrated in transmission by raster scanning over a sub-mm region of paraffinized colon tissue on CaF2 substrate, and the signal was measured using a fiber-coupled grating spectrometer. This demonstration has shown that we can distinguish between epithelial and surrounding connective tissues within a paraffinized section of colon tissue by imaging at discrete wavelengths related to distinct chemical absorption features.

Chalcogenide glass-ceramic with self-organized heterojunctions: application to photovoltaic solar cells

Science.gov (United States)

Zhang, Xianghua; Korolkov, Ilia; Fan, Bo; Cathelinaud, Michel; Ma, Hongli; Adam, Jean-Luc; Merdrignac, Odile; Calvez, Laurent; Lhermite, Hervé; Brizoual, Laurent Le; Pasquinelli, Marcel; Simon, Jean-Jacques

2018-03-01

In this work, we present for the first time the concept of chalcogenide glass-ceramic for photovoltaic applications with the GeSe2-Sb2Se3-CuI system. It has been demonstrated that thin films, deposited with the sputtering technique, are amorphous and can be crystallized with appropriate heat treatment. The thin film glass-ceramic behaves as a p-type semiconductor, even if it contains p-type Cu2GeSe3 and n-type Sb2Se3. The conductivity of Sb2Se3 has been greatly improved by appropriate iodine doping. The first photovoltaic solar cells based on the association of iodine-doped Sb2Se3 and the glass-ceramic thin films give a short-circuit current density JSC of 10 mA/cm2 and an open-circuit voltage VOC of 255 mV, with a power conversion efficiency of about 0.9%.

Modeling of Mid-IR Amplifier Based on an Erbium-Doped Chalcogenide Microsphere

Directory of Open Access Journals (Sweden)

P. Bia

2012-01-01

Full Text Available An optical amplifier based on a tapered fiber and an Er3+-doped chalcogenide microsphere is designed and optimized. A dedicated 3D numerical model, which exploits the coupled mode theory and the rate equations, is used. The main transitions among the erbium energy levels, the amplified spontaneous emission, and the most important secondary transitions pertaining to the ion-ion interactions have been considered. Both the pump and signal beams are efficiently injected and obtained by a suitable design of the taper angle and the fiber-microsphere gap. Moreover, a good overlapping between the optical signals and the rare-earth-doped region is also obtained. In order to evaluate the amplifier performance in reduced computational time, the doped area is partitioned in sectors. The obtained simulation results highlight that a high-efficiency midinfrared amplification can be obtained by using a quite small microsphere.

Mid-IR supercontinuum generation beyond 7 μm using a silica-fluoride-chalcogenide fiber cascade

DEFF Research Database (Denmark)

Petersen, Christian Rosenberg; Moselund, Peter M.; Petersen, Christian

2016-01-01

and fluoride fibers by an amplified 1.55 μm nanosecond diode laser. By pumping a commercial Ge10As22Se68 single-material photonic crystal fiber with 135.7 mW of the pump continuum from 3.5- 4.4 μm, we obtained a continuum up to 7.2 μm with a total output power after the collimating lens of 54.5 mW, and 3.7 m......We report on an experimental demonstration of mid-infrared cascaded supercontinuum generation in commercial silica, fluoride, and chalcogenide fibers as a potentially cheap and practical alternative to direct pumping schemes. A pump continuum up to 4.4 μm was generated in cascaded silica...

Electrostatically driven resonance energy transfer in "cationic" biocompatible indium phosphide quantum dots.

Science.gov (United States)

Devatha, Gayathri; Roy, Soumendu; Rao, Anish; Mallick, Abhik; Basu, Sudipta; Pillai, Pramod P

2017-05-01

Indium Phosphide Quantum Dots (InP QDs) have emerged as an alternative to toxic metal ion based QDs in nanobiotechnology. The ability to generate cationic surface charge, without compromising stability and biocompatibility, is essential in realizing the full potential of InP QDs in biological applications. We have addressed this challenge by developing a place exchange protocol for the preparation of cationic InP/ZnS QDs. The quaternary ammonium group provides the much required permanent positive charge and stability to InP/ZnS QDs in biofluids. The two important properties of QDs, namely bioimaging and light induced resonance energy transfer, are successfully demonstrated in cationic InP/ZnS QDs. The low cytotoxicity and stable photoluminescence of cationic InP/ZnS QDs inside cells make them ideal candidates as optical probes for cellular imaging. An efficient resonance energy transfer ( E ∼ 60%) is observed, under physiological conditions, between the cationic InP/ZnS QD donor and anionic dye acceptor. A large bimolecular quenching constant along with a linear Stern-Volmer plot confirms the formation of a strong ground state complex between the cationic InP/ZnS QDs and the anionic dye. Control experiments prove the role of electrostatic attraction in driving the light induced interactions, which can rightfully form the basis for future nano-bio studies between cationic InP/ZnS QDs and anionic biomolecules.

Mg-containing hydroxyapatite coatings produced by plasma electrolytic oxidation of titanium

Energy Technology Data Exchange (ETDEWEB)

Antonio, Cesar Augusto; Rangel, Elidiane Cipriano; Durrant, Steven Frederick; Cruz, Nilson Cristino da, E-mail: cesar.augustoa@hotmail.com [Universidade Estadual Paulista Julio de Mesquita Filho (UNESP), Sorocaba, SP (Brazil). Lab. de Plasmas Tecnologicos; Delgado-Silva, Adriana de Oliveira [Universidade Federal de Sao Carlos (UFSCar), Sorocaba, SP (Brazil); Tabacniks, Manfredo H. [Universidade de Sao Paulo (USP), SP (Brazil). Instituto de Fisica

2017-07-15

Plasma Electrolytic Oxidation (PEO) is promising for the processing of biomaterials because it enables the production of surfaces with adjustable composition and structure. In this work, aimed at the improvement of the bioactivity of titanium, PEO has been used to grow calcium phosphide coatings on titanium substrates. The effects of the addition of magnesium acetate to the electrolytes on the composition of the coatings produced during 120 s on Ti disks using bipolar voltage pulses and solutions of calcium and magnesium acetates and sodium glycerophosphate as electrolytes have been studied. Scanning electron microscopy, X-ray energy dispersive spectroscopy, Rutherford backscattering spectroscopy, X-ray diffractometry with Rietveld refinement and profilometry were used to characterize the modified samples. Coatings composed of nearly 50 % of Mg-doped hydroxyapatite have been produced. In certain conditions up to 4% Mg can be incorporated into the coating without any observable significant structural modifications of the hydroxyapatite. (author)

Pure and carbon-doped boron phosphide (6,0) zigzag nanotube: A computational NMR study

Energy Technology Data Exchange (ETDEWEB)

Arshadi, S., E-mail: sattar_arshadi@yahoo.com [Department of Chemistry, Payame Noor University, 19395-4697, I.R. of Iran (Iran, Islamic Republic of); Bekhradnia, A.R., E-mail: abekhradnia@gmail.com [Pharmaceutical Sciences Research Center, Department of Medicinal Chemistry, Mazandaran University of Medical Sciences, Sari (Iran, Islamic Republic of); Department of Chemistry and Molecular Biology, Gothenburg University, Gothenburg (Sweden); Alipour, F.; Abedini, S. [Department of Chemistry, Payame Noor University, 19395-4697, I.R. of Iran (Iran, Islamic Republic of)

2015-11-15

Calculations were performed for investigation of the properties of the electronic structure of Carbon- Doped Boron Phosphide Nanotube (CDBPNT). Pristine and three models of C-doped structures of (6,0) zigzag BPNT were studied at density functional theory (DFT) in combination with 6-311G* basis set using Gaussian package of program. The calculated parameters reveal that various {sup 11}B and {sup 31}P nuclei are divided into some layers with equivalent electrostatic properties. The electronic structure properties are highly influenced by replacement of {sup 11}B and {sup 31}P atoms by {sup 12}C atoms in pristine model. Furthermore, the HOMO−LUMO gap energy for suggested doped models (I), (II) and (III) were lower than pure BPNT pristine systems. The dipole moment values of models (II) and (III) were decreased to 1.788 and 1.789, respectively while the dipole moments of model (I) were enhanced to 4.373, in compare to pure pristine one (2.586). The magnitude of changes in Chemical Shielding (CS) tensor parameters revealed that the electron density at the site of {sup 31}P was higher than that at the site of {sup 11}B due to carbon doping.

Lead-chalcogenide mid-infrared vertical external cavity surface emitting lasers with improved threshold: Theory and experiment

Science.gov (United States)

Fill, Matthias; Debernardi, Pierluigi; Felder, Ferdinand; Zogg, Hans

2013-11-01

Mid-infrared Vertical External Cavity Surface Emitting Lasers (VECSEL) based on narrow gap lead-chalcogenide (IV-VI) semiconductors exhibit strongly reduced threshold powers if the active layers are structured laterally for improved optical confinement. This is predicted by 3-d optical calculations; they show that lateral optical confinement is needed to counteract the anti-guiding features of IV-VIs due to their negative temperature dependence of the refractive index. An experimental proof is performed with PbSe quantum well based VECSEL grown on a Si-substrate by molecular beam epitaxy and emitting around 3.3 μm. With proper mesa-etching, the threshold intensity is about 8-times reduced.

Lead-chalcogenide mid-infrared vertical external cavity surface emitting lasers with improved threshold: Theory and experiment

Energy Technology Data Exchange (ETDEWEB)

Fill, Matthias [ETH Zurich, Laser Spectroscopy and Sensing Lab, 8093 Zurich (Switzerland); Phocone AG, 8005 Zurich (Switzerland); Debernardi, Pierluigi [IEIIT-CNR, Torino 10129 (Italy); Felder, Ferdinand [Phocone AG, 8005 Zurich (Switzerland); Zogg, Hans [ETH Zurich (Switzerland)

2013-11-11

Mid-infrared Vertical External Cavity Surface Emitting Lasers (VECSEL) based on narrow gap lead-chalcogenide (IV-VI) semiconductors exhibit strongly reduced threshold powers if the active layers are structured laterally for improved optical confinement. This is predicted by 3-d optical calculations; they show that lateral optical confinement is needed to counteract the anti-guiding features of IV-VIs due to their negative temperature dependence of the refractive index. An experimental proof is performed with PbSe quantum well based VECSEL grown on a Si-substrate by molecular beam epitaxy and emitting around 3.3 μm. With proper mesa-etching, the threshold intensity is about 8-times reduced.

V{sub 18}P{sub 9}C{sub 2}. A complex phosphide carbide

Energy Technology Data Exchange (ETDEWEB)

Boller, Herbert [Linz Univ. (Austria). Inst. fuer Anorganische Chemie; Effenberger, Herta [Wien Univ. (Austria). Inst. fuer Mineralogie und Kristallographie

2016-08-01

V{sub 18}P{sub 9}C{sub 2} crystallizes in the orthorhombic space group Pmma with the lattice parameters a = 17.044(3), b = 3.2219(7), and c = 13.030(2) Aa, Z = 2. The crystal structure is composed of 19 symmetry-independent atoms. The crystal structure is considered as a network formed by the transition metal atoms exhibiting cubic, trigonal prismatic, and octahedral voids centered by V, P, and C atoms, respectively. Vice versa, the V and P atoms form a three-dimensional network. The two CV{sub 6} octahedra are edge- and corner-connected to chains running parallel to [010]. The five unique P atoms are trigonal prismatically coordinated by V atoms with one to three faces capped again by a V atom. The V atoms have mainly cubic environments formed solely by V or by V and P atoms. V{sub 18}P{sub 9}C{sub 2} exhibits some structural relations to other compounds of the ternary system V-P-C as well as to other intermetallic phases. Despite the low carbon content, V{sub 18}P{sub 9}C{sub 2} is considered as a ternary compound rather than an interstitially stabilized (binary) phosphide in view of its special structural features.

An overview of the Fe-chalcogenide superconductors

International Nuclear Information System (INIS)

Wu, M K; Wen, Y C; Chen, T K; Chang, C C; Wu, P M; Wang, M J; Lin, P H; Lee, W C

2015-01-01

This review intends to summarize recent advancements in FeSe and related systems. The FeSe and related superconductors are currently receiving considerable attention for the high critical temperature (T C ) observed and for many similar features to the high T C cuprate superconductors. These similarities suggest that understanding the FeSe-based compounds could potentially help our understanding of the cuprates. We begin the review by presenting common features observed in the FeSe- and FeAs-based systems. Then we discuss the importance of careful control of the material preparation allowing for a systematic structure characterization. With this control, numerous rich phases have been observed. Importantly, we suggest that the Fe-vacancy ordered phases found in the FeSe-based compounds, which are non-superconducting magnetic Mott insulators, are the parent compounds of the superconductors. Superconductivity can emerge from the parent phases by disordering the Fe vacancy order, often by a simple annealing treatment. Then we review physical properties of the Fe chalcogenides, specifically the optical properties and angle-resolved photoemission spectroscopy (ARPES) results. From the literature, strong evidence points to the existence of orbital modification accompanied by a gap-opening, prior to the structural phase transition, which is closely related to the occurrence of superconductivity. Furthermore, strong lattice to spin coupling are important for the occurrence of superconductivity in FeSe. Therefore, it is believed that the iron selenides and related compounds will provide essential information to understand the origin of superconductivity in the iron-based superconductors, and possibly the superconducting cuprates. (topical review)

Ge and As x-ray absorption fine structure spectroscopic study of homopolar bonding, chemical order, and topology in Ge-As-S chalcogenide glasses

International Nuclear Information System (INIS)

Sen, S.; Ponader, C.W.; Aitken, B.G.

2001-01-01

The coordination environments of Ge and As atoms in Ge x As y S 1-x-y glasses with x:y=1:2, 1:1, and 2.5:1 and with wide-ranging S contents have been studied with Ge and As K-edge x-ray absorption fine structure spectroscopy. The coordination numbers of Ge and As atoms are found to be 4 and 3, respectively, in all glasses. The first coordination shells of Ge and As atoms in the stoichiometric and S-excess glasses consist of S atoms only, implying the preservation of chemical order at least over the length scale of the first coordination shell. As-As homopolar bonds are found to appear at low and intermediate levels of S deficiency, whereas Ge-Ge bonds are formed only in strongly S-deficient glasses indicating clustering of metal atoms and violation of chemical order in S-deficient glasses. The composition-dependent variation in chemical order in chalcogenide glasses has been hypothesized to result in topological changes in the intermediate-range structural units. The role of such topological transitions in controlling the structure-property relationships in chalcogenide glasses is discussed

Epitaxial growth and processing of InP films in a ``novel`` remote plasma-MOCVD apparatus

Energy Technology Data Exchange (ETDEWEB)

Bruno, G. [Bari Univ. (Italy). Centro di Studio per la Chimica; Losurdo, M. [Bari Univ. (Italy). Centro di Studio per la Chimica; Capezzuto, P. [Bari Univ. (Italy). Centro di Studio per la Chimica; Capozzi, V. [Bari Univ. (Italy). Ist. di Fisica; Lorusso, F.G. [Bari Univ. (Italy). Ist. di Fisica; Minafra, A. [Bari Univ. (Italy). Ist. di Fisica

1996-06-01

A new remote plasma MOCVD apparatus for the treatment and deposition of III-V materials and, specifically, of indium phosphide, has been developed. The plasma source is used to produce hydrogen atoms and to predissociate phosphine for, respectively, the reduction of native oxide on InP substrate surface and the InP deposition. In situ diagnostics by optical emission spectroscopy, mass spectrometry, and spectroscopic ellipsometry are used to fingerprint the gas phase and the growth surface. The plasma cleaning process effectively reduce the InP oxide layer without surface damage. Indium phosphide epilayers deposited from trimethylindium and plasma activated PH{sub 3} show singular photoluminescence spectra with signal intensity higher than that of the best InP film deposited under conventional MOCVD condition (without PH{sub 3} plasma preactivation). (orig.)

Chalcogenide glass-ceramic with self-organized heterojunctions: application to photovoltaic solar cells

Directory of Open Access Journals (Sweden)

Zhang Xianghua

2018-01-01

Full Text Available In this work, we present for the first time the concept of chalcogenide glass-ceramic for photovoltaic applications with the GeSe2–Sb2Se3–CuI system. It has been demonstrated that thin films, deposited with the sputtering technique, are amorphous and can be crystallized with appropriate heat treatment. The thin film glass-ceramic behaves as a p-type semiconductor, even if it contains p-type Cu2GeSe3 and n-type Sb2Se3. The conductivity of Sb2Se3 has been greatly improved by appropriate iodine doping. The first photovoltaic solar cells based on the association of iodine-doped Sb2Se3 and the glass-ceramic thin films give a short-circuit current density JSC of 10 mA/cm2 and an open-circuit voltage VOC of 255 mV, with a power conversion efficiency of about 0.9%.

Low-phonon-frequency chalcogenide crystalline hosts for rare earth lasers operating beyond three microns

Science.gov (United States)

Payne, Stephen A.; Page, Ralph H.; Schaffers, Kathleen I.; Nostrand, Michael C.; Krupke, William F.; Schunemann, Peter G.

2000-01-01

The invention comprises a RE-doped MA.sub.2 X.sub.4 crystalline gain medium, where M includes a divalent ion such as Mg, Ca, Sr, Ba, Pb, Eu, or Yb; A is selected from trivalent ions including Al, Ga, and In; X is one of the chalcogenide ions S, Se, and Te; and RE represents the trivalent rare earth ions. The MA.sub.2 X.sub.4 gain medium can be employed in a laser oscillator or a laser amplifier. Possible pump sources include diode lasers, as well as other laser pump sources. The laser wavelengths generated are greater than 3 microns, as becomes possible because of the low phonon frequency of this host medium. The invention may be used to seed optical devices such as optical parametric oscillators and other lasers.

Results from Coupled Optical and Electrical Sentaurus TCAD Models of a Gallium Phosphide on Silicon Electron Carrier Selective Contact Solar Cell

Energy Technology Data Exchange (ETDEWEB)

Limpert, Steven; Ghosh, Kunal; Wagner, Hannes; Bowden, Stuart; Honsberg, Christiana; Goodnick, Stephen; Bremner, Stephen; Green, Martin

2014-06-09

We report results from coupled optical and electrical Sentaurus TCAD models of a gallium phosphide (GaP) on silicon electron carrier selective contact (CSC) solar cell. Detailed analyses of current and voltage performance are presented for devices having substrate thicknesses of 10 μm, 50 μm, 100 μm and 150 μm, and with GaP/Si interfacial quality ranging from very poor to excellent. Ultimate potential performance was investigated using optical absorption profiles consistent with light trapping schemes of random pyramids with attached and detached rear reflector, and planar with an attached rear reflector. Results indicate Auger-limited open-circuit voltages up to 787 mV and efficiencies up to 26.7% may be possible for front-contacted devices.

Design and fabrication of anti-reflection coating on Gallium Phosphide, Zinc Selenide and Zinc Sulfide substrates for visible and infrared application

Directory of Open Access Journals (Sweden)

Mokrý P.

2013-05-01

Full Text Available Results of design and fabrication of a dual-band anti-reflection coating on a gallium phosphide (GaP, zinc selenide (ZnSe and zinc sulfide (ZnS substrates are presented. A multilayer stack structure of antireflection coatings made of zinc sulfide and yttrium fluoride (YF3 was theoretically designed for optical bands between 0.8 and 0.9 μm and between 9.5 and 10.5 μm. This stack was designed as efficient for these materials (GaP, ZnS, ZnSe together. Multilayer stack structure was deposited using thermal evaporation method. Theoretically predicted transmittance spectra were compared with transmitted spectra measured on coated substrates. Efficiency of anti-reflection coating is estimated and discrepancies are analyzed and discussed.

The pseudo-binary mercury chalcogenide alloy HgSe sub 0 sub . sub 7 S sub 0 sub . sub 3 at high pressure: a mechanism for the zinc blende to cinnabar reconstructive phase transition

CERN Document Server

Kozlenko, D P; Ehm, L; Hull, S; Savenko, B N; Shchennikov, V V; Voronin, V I

2003-01-01

The structure of the pseudo-binary mercury chalcogenide alloy HgSe sub 0 sub . sub 7 S sub 0 sub . sub 3 has been studied by x-ray and neutron powder diffraction at pressures up to 8.5 GPa. A phase transition from the cubic zinc blende structure to the hexagonal cinnabar structure was observed at P approx 1 GPa. A phenomenological model of this reconstructive phase transition based on a displacement mechanism is proposed. Analysis of the geometrical relationship between the zinc blende and the cinnabar phases has shown that the possible order parameter for the zinc blende-cinnabar structural transformation is the spontaneous strain e sub 4. This assignment agrees with the previously observed high pressure behaviour of the elastic constants of some mercury chalcogenides.

Mid-infrared performance of single mode chalcogenide fibers

Science.gov (United States)

Cook, Justin; Sincore, Alex; Tan, Felix; El Halawany, Ahmed; Riggins, Anthony; Shah, Lawrence; Abouraddy, Ayman F.; Richardson, Martin C.; Schepler, Kenneth L.

2018-02-01

Due to the intrinsic absorption edge in silica near 2.4 μm, more exotic materials are required to transmit laser power in the IR such as fluoride or chalcogenide glasses (ChGs). In particular, ChG fibers offer broad IR transmission with low losses fibers at four different infrared wavelengths: 2053 nm, 2520 nm and 4550 nm. Polymer clad ChG fibers were drawn with 12.3 μm and 25 μm core diameters. Testing at 2053 nm was accomplished using a > 15 W, CW Tm:fiber laser. Power handling up to 10.2 W with single mode beam quality has been demonstrated, limited only by the available Tm:fiber output power. Anti-reflective coatings were successfully deposited on the ChG fiber facets, allowing up to 90.6% transmission with 12.2 MW/cm2 intensity on the facet. Single mode guidance at 4550 nm was also demonstrated using a quantum cascade laser (QCL). A custom optical system was constructed to efficiently couple the 0.8 NA QCL radiation into the 0.2 NA ChG fiber, allowing for a maximum of 78% overlap between the QCL radiation and fundamental mode of the fiber. With an AR-coated, 25 μm core diameter fiber, >50 mW transmission was demonstrated with > 87% transmission. Finally, we present results on fiber coupling from a free space Cr:ZnSe resonator at 2520 nm.

Preparation and study of the properties of indium phosphide thin films impregnated with cadmium and zinc

International Nuclear Information System (INIS)

Moutinho, H.R.

1984-01-01

Indium phosphide thin films were deposited by vacuum evaporation of indium and phosphorous, using the three-temperature method. The effects of the introduction of cadmium and zinc, group II impurities, on the properties of these films were studied. The introduction of cadmium was achieved by coevaporation of this element during the film deposition. The introduction of zinc was done by diffusion of this element in intrinsic films. Analyses of these films were carried out by the study of the composition, morphology, structure, optical properties and electrical properties. The introduction of cadmium led to the reduction of grain size and increase in the bandgap and in certain cases, even change in morphology. Phases of CdP2 and β-CdP2 were detected and the resistivity increased by some orders of magnitude. The introduction of zinc did not change the morphology, crystalline structure and bandgap. However, a new energy level corresponding to the zinc acceptor level was found and the resistivity increased by some orders of magnitude. (Author) [pt

Ultrabroadband, Midinfrared Supercontinuum Generation in Dispersion Engineered As2Se3-Based Chalcogenide Photonic Crystal Fibers

Directory of Open Access Journals (Sweden)

Rim Cherif

2013-01-01

Full Text Available Small core As2Se3-based photonic crystal fibers (PCFs are accurately characterized for compact, high power, ultrabroadband, and coherent supercontinuum generation within few millimeters fiber length. Bandwidths of ~5.3 μm, 5 μm, and 3.2 μm were calculated for hole-to-hole spacings Λ= 3.5 μm, 4.5 μm, and 5.5 μm, respectively. The spectral broadening in the chalcogenide PCF is mainly caused by self-phase modulation and Raman-induced soliton self-frequency shift. The results show that small core As2Se3 PCFs are a promising candidate for mid-IR SCG up to ~8 μm.

Correlated structural and electronic phase transformations in transition metal chalcogenide under high pressure

Energy Technology Data Exchange (ETDEWEB)

Li, Chunyu, E-mail: licy@hpstar.ac.cn, E-mail: yanhao@hpstar.ac.cn; Ke, Feng; Yu, Zhenhai; Chen, Zhiqiang; Yan, Hao, E-mail: licy@hpstar.ac.cn, E-mail: yanhao@hpstar.ac.cn [Center for High Pressure Science and Technology Advanced Research, Shanghai 201203 (China); Hu, Qingyang [Center for High Pressure Science and Technology Advanced Research, Shanghai 201203 (China); Geophysical Laboratory, Carnegie Institution of Washington, Washington, DC 20015 (United States); Zhao, Jinggeng [Natural Science Research Center, Academy of Fundamental and Interdisciplinary Sciences, Harbin Institute of Technology, Harbin 150080 (China)

2016-04-07

Here, we report comprehensive studies on the high-pressure structural and electrical transport properties of the layered transition metal chalcogenide (Cr{sub 2}S{sub 3}) up to 36.3 GPa. A structural phase transition was observed in the rhombohedral Cr{sub 2}S{sub 3} near 16.5 GPa by the synchrotron angle dispersive X-ray diffraction measurement using a diamond anvil cell. Through in situ resistance measurement, the electric resistance value was detected to decrease by an order of three over the pressure range of 7–15 GPa coincided with the structural phase transition. Measurements on the temperature dependence of resistivity indicate that it is a semiconductor-to-metal transition in nature. The results were also confirmed by the electronic energy band calculations. Above results may shed a light on optimizing the performance of Cr{sub 2}S{sub 3} based applications under extreme conditions.

Frequency of Cardiac Arrhythmias in Patients with Aluminum Phosphide Poisoning

Directory of Open Access Journals (Sweden)

Umair Aziz

2015-12-01

Full Text Available Background: Cardiac failure is the major lethal consequence of aluminum phosphide (AlP poisoning. This study was designed to determine the frequency of cardiac arrhythmias in patients with AlP poisoning. Methods: In this prospective cross-sectional study, patients with definitive history of AlP poisoning treated at emergency department of Allied Hospital Faisalabad, Faisalabad, Pakistan, from July 2013 to November 2014 were included. On admission, twelve-lead electrocardiogram (ECG was performed for all patients. During admission, all patients underwent continuous cardiac monitoring using a cardiac monitor. If an arrhythmia was suspected on the cardiac monitor, another ECG was obtained immediately.  Results: During the study period, 100 patients with AlP poisoning (63% men were treated at Allied Hospital Faisalabad. Mean age of the patients was 26.7 ± 7.9 years ranging from 16 to 54 years. Tachycardia was detected in 68 patients and bradycardia in 12 patients. Hypotension was observed in 75 patients. Eighty patients developed cardiac arrhythmia. The most frequent arrhythmia was atrial fibrillation (31% of patients followed by ventricular fibrillation (20%, ventricular tachycardia (17%, 3rd degree AV block (7% and 2nd degree AV block (5%. In total, 78 patients died, depicting a 78% mortality rate following wheat pill poisoning. Among those who died, seventy-one patients had cardiac arrhythmia. Comparison of death rate between patients with and without cardiac arrhythmia showed a significant difference (71/80 (88.8% vs. 7/20 (35%; P < 0.001.  Conclusion: Wheat pill poisoning causes a very high mortality, and circulatory collapse is the major cause of death among these patients. Most of the patients with AlP poisoning develop cardiac arrhythmias which are invariably life threatening. Early detection of cardiac disorders and proper management of arrhythmias may reduce mortalities.

Density functional study of the group II phosphide semiconductor compounds under hydrostatic pressure

Energy Technology Data Exchange (ETDEWEB)

Mokhtari, Ali [Simulation Laboratory, Department of Physics, Faculty of Science, Shahrekord University, PB 115, Shahrekord (Iran, Islamic Republic of)], E-mail: mokhtari@sci.sku.ac.ir

2008-04-02

The full-potential all-electron linearized augmented plane wave plus local orbital (FP-LAPW+lo) method, as implemented in the suite of software WIEN2k, has been used to systematically investigate the structural and electronic properties of the group II phosphide semiconductor compounds M{sub 3}P{sub 2} (M = Be, Mg and Ca). The exchange-correlation functional was approximated as a generalized gradient functional introduced by Perdew-Burke-Ernzerhof (GGA96) and Engel-Vosko (EV-GGA). Internal parameters were optimized by relaxing the atomic positions in the force directions using the Hellman-Feynman approach. The structural parameters, bulk modules, cohesive energy, band structures and density of states have been calculated and compared to the available experimental and theoretical results. These compounds are predicted to be semiconductors with the direct band gap of about 1.60, 2.55 and 2.62 eV for Be{sub 3}P{sub 2}, Mg{sub 3}P{sub 2} and Ca{sub 3}P{sub 2}, respectively. The effects of hydrostatic pressure on the behavior of band parameters such as band gap, valence bandwidths and anti-symmetric gap (the energy gap between two parts of the valence bands) are investigated using both GGA96 and EV-GGA. The contribution of s, p and d orbitals of different atoms to the density of states is discussed in detail.

Density functional study of the group II phosphide semiconductor compounds under hydrostatic pressure

International Nuclear Information System (INIS)

Mokhtari, Ali

2008-01-01

The full-potential all-electron linearized augmented plane wave plus local orbital (FP-LAPW+lo) method, as implemented in the suite of software WIEN2k, has been used to systematically investigate the structural and electronic properties of the group II phosphide semiconductor compounds M 3 P 2 (M = Be, Mg and Ca). The exchange-correlation functional was approximated as a generalized gradient functional introduced by Perdew-Burke-Ernzerhof (GGA96) and Engel-Vosko (EV-GGA). Internal parameters were optimized by relaxing the atomic positions in the force directions using the Hellman-Feynman approach. The structural parameters, bulk modules, cohesive energy, band structures and density of states have been calculated and compared to the available experimental and theoretical results. These compounds are predicted to be semiconductors with the direct band gap of about 1.60, 2.55 and 2.62 eV for Be 3 P 2 , Mg 3 P 2 and Ca 3 P 2 , respectively. The effects of hydrostatic pressure on the behavior of band parameters such as band gap, valence bandwidths and anti-symmetric gap (the energy gap between two parts of the valence bands) are investigated using both GGA96 and EV-GGA. The contribution of s, p and d orbitals of different atoms to the density of states is discussed in detail

Bimetallic Cobalt-Based Phosphide Zeolitic Imidazolate Framework: CoP _x Phase-Dependent Electrical Conductivity and Hydrogen Atom Adsorption Energy for Efficient Overall Water Splitting

Energy Technology Data Exchange (ETDEWEB)

Song, Junhua [School of Mechanical and Materials Engineering, Washington State University, Pullman WA 99164 USA; Zhu, Chengzhou [School of Mechanical and Materials Engineering, Washington State University, Pullman WA 99164 USA; Xu, Bo Z. [School of Mechanical and Materials Engineering, Washington State University, Pullman WA 99164 USA; Fu, Shaofang [School of Mechanical and Materials Engineering, Washington State University, Pullman WA 99164 USA; Engelhard, Mark H. [Pacific Northwest National Laboratory, Richland WA 99352 USA; Ye, Ranfeng [School of Mechanical and Materials Engineering, Washington State University, Pullman WA 99164 USA; Du, Dan [School of Mechanical and Materials Engineering, Washington State University, Pullman WA 99164 USA; Beckman, Scott P. [School of Mechanical and Materials Engineering, Washington State University, Pullman WA 99164 USA; Lin, Yuehe [School of Mechanical and Materials Engineering, Washington State University, Pullman WA 99164 USA; Pacific Northwest National Laboratory, Richland WA 99352 USA

2016-10-25

Cobalt-based bimetallic phosphide encapsulated in carbonized zeolitic imadazolate frameworks has been successfully synthesized and showed excellent activities toward both hydrogen evolution reaction (HER) and oxygen evolution reaction (OER). Density functional theory calculation and electrochemical measurements reveal that the electrical conductivity and electrochemical activity are closely associated with the Co2P/CoP mixed phase behaviors upon Cu metal doping. This relationship is found to be the decisive factor for enhanced electrocatalytic performance. Moreover, the precise control of Cu content in Co-host lattice effectively alters the Gibbs free energy for H* adsorption, which is favorable for facilitating reaction kinetics. Impressively, an optimized performance has been achieved with mild Cu doping in Cu0.3Co2.7P/nitrogen-doped carbon (NC) which exhibits an ultralow overpotential of 0.19 V at 10 mA cm–2 and satisfying stability for OER. Cu0.3Co2.7P/NC also shows excellent HER activity, affording a current density of 10 mA cm–2 at a low overpotential of 0.22 V. In addition, a homemade electrolyzer with Cu0.3Co2.7P/NC paired electrodes shows 60% larger current density than Pt/ RuO2 couple at 1.74 V, along with negligible catalytic deactivation after 50 h operation. The manipulation of electronic structure by controlled incorporation of second metal sheds light on understanding and synthesizing bimetallic transition metal phosphides for electrolysis-based energy conversion.

Magnetic excitations in iron chalcogenide superconductors.

Science.gov (United States)

Kotegawa, Hisashi; Fujita, Masaki

2012-10-01

Nuclear magnetic resonance and neutron scattering experiments in iron chalcogenide superconductors are reviewed to make a survey of the magnetic excitations in FeSe, FeSe 1- x Te x and alkali-metal-doped A x Fe 2- y Se 2 ( A = K, Rb, Cs, etc). In FeSe, the intimate relationship between the spin fluctuations and superconductivity can be seen universally for the variations in the off-stoichiometry, the Co-substitution and applied pressure. The isovalent compound FeTe has a magnetic ordering with different wave vector from that of other Fe-based magnetic materials. The transition temperature T c of FeSe increases with Te substitution in FeSe 1- x Te x with small x , and decreases in the vicinity of the end member FeTe. The spin fluctuations are drastically modified by the Te substitution. In the vicinity of the end member FeTe, the low-energy part of the spin fluctuation is dominated by the wave vector of the ordered phase of FeTe; however, the reduction of T c shows that it does not support superconductivity. The presence of same wave vector as that of other Fe-based superconductors in FeSe 1- x Te x and the observation of the resonance mode demonstrate that FeSe 1- x Te x belongs to the same group as most of other Fe-based superconductors in the entire range of x , where superconductivity is mediated by the spin fluctuations whose wave vector is the same as the nesting vector between the hole pockets and the electron pockets. On the other hand, the spin fluctuations differ for alkali-metal-doped A x Fe 2- y Se 2 and FeSe or other Fe-based superconductors in their wave vector and strength in the low-energy part, most likely because of the different Fermi surfaces. The resonance mode with different wave vector suggests that A x Fe 2- y Se 2 has an exceptional superconducting symmetry among Fe-based superconductors.

Pressure induced structural transitions in Lead Chalcogenides and its influence on thermoelectric properties

Science.gov (United States)

Petersen, John; Spinks, Michael; Borges, Pablo; Scolfaro, Luisa

2012-03-01

Lead chalcogenides, most notably PbTe and PbSe, have become an active area of research due to their thermoelectric (TE) properties. The high figure of merit (ZT) of these materials has brought much attention to them, due to their ability to convert waste heat into electricity, with a possible application being in engine exhaust. Here, we examine the effects of altering the lattice parameter on total ground state energy and the band gap using first principles calculations performed within Density Functional Theory and the Projector Augmented Wave approach and the Vienna Ab-initio Simulation Package (VASP-PAW) code. Both PbTe and PbSe, in NaCl, orthorhombic, and CsCl structures are considered. It is found that altering the lattice parameter, which is analogous to applying external pressure on the material experimentally, has notable effects on both ground state energy and the band gap. The implications of this behavior in the TE properties of these materials are analyzed.

The use of castor oil and ricinoleic acid in lead chalcogenide nanocrystal synthesis

Science.gov (United States)

Kyobe, Joseph W. M.; Mubofu, Egid B.; Makame, Yahya M. M.; Mlowe, Sixberth; Revaprasadu, Neerish

2016-08-01

A green solution-based thermolysis method for the synthesis of lead chalcogenide (PbE, E = S, Se, Te) nanocrystals in castor oil (CSTO) and its isolate ricinoleic acid (RA) is described. The blue shift observed from the optical spectra of CSTO and RA-capped PbE nanocrystals (NCs) confirmed the evidence of quantum confinement. The dimensions of PbE NCs obtained from NIR absorption spectra, transmission electron microscopy (TEM), and X-ray diffraction (XRD) studies were in good agreement. The particle sizes estimated were in the range of 20, 25, and 130 nm for castor oil-capped PbS, PbSe, and PbTe, respectively. Well-defined close to cubic-shaped particles were observed in the scanning electron microscopy (SEM) images of PbSe and PbTe nanocrystals. The high-resolution TEM and selective area electron diffraction (SAED) micrographs of the as-synthesized crystalline PbE NCs showed distinct lattice fringes with d-spacing distances corroborating with the standard values reported in literature.

Valence band electronic structure of Pd based ternary chalcogenide superconductors

Energy Technology Data Exchange (ETDEWEB)

Lohani, H. [Institute of Physics, Sachivalaya Marg, Bhubaneswar 751005 (India); Homi Bhabha National Institute, Training School Complex, Anushakti Nagar, Mumbai 400085 (India); Mishra, P. [Institute of Physics, Sachivalaya Marg, Bhubaneswar 751005 (India); Goyal, R.; Awana, V.P.S. [National Physical Laboratory(CSIR), Dr. K. S. Krishnan Road, New Delhi 110012 (India); Sekhar, B.R., E-mail: sekhar@iopb.res.in [Institute of Physics, Sachivalaya Marg, Bhubaneswar 751005 (India); Homi Bhabha National Institute, Training School Complex, Anushakti Nagar, Mumbai 400085 (India)

2016-12-15

Highlights: • VB Photoemission study and DFT calculations on Pd based ternary superconductors are presented. • Nb{sub 2}Pd{sub 0.95}S{sub 5} shows a temperature dependent pseudogap. • VB spectral features of ternary superconductors are correlated to their structural geometry. - Abstract: We present a comparative study of the valence band electronic structure of Pd based ternary chalcogenide superconductors Nb{sub 2}Pd{sub 0.95}S{sub 5}, Ta{sub 2}Pd{sub 0.97}S{sub 6} and Ta{sub 2}Pd{sub 0.97}Te{sub 6} using experimental photoemission spectroscopy and density functional based theoretical calculations. We observe a qualitatively similarity between valence band (VB) spectra of Nb{sub 2}Pd{sub 0.95}S{sub 5} and Ta{sub 2}Pd{sub 0.97}S{sub 6}. Further, we find a pseudogap feature in Nb{sub 2}Pd{sub 0.95}S{sub 5} at low temperature, unlike other two compounds. We have correlated the structural geometry with the differences in VB spectra of these compounds. The different atomic packing in these compounds could vary the strength of inter-orbital hybridization among various atoms which leads to difference in their electronic structure as clearly observed in our DOS calculations.

Pushing indium phosphide quantum dot emission deeper into the near infrared

Science.gov (United States)

Saeboe, A. M.; Kays, J.; Mahler, A. H.; Dennis, A. M.

2018-02-01

Cadmium-free near infrared (NIR) emitting quantum dots (QDs) have significant potential for multiplexed tissue-depth imaging applications in the first optical tissue window (i.e., 650 - 900 nm). Indium phosphide (InP) chemistry provides one of the more promising cadmium-free options for biomedical imaging, but the full tunability of this material has not yet been achieved. Specifically, InP QD emission has been tuned from 480 - 730 nm in previous literature reports, but examples of samples emitting from 730 nm to the InP bulk bandgap limit of 925 nm are lacking. We hypothesize that by generating inverted structures comprising ZnSe/InP/ZnS in a core/shell/shell heterostructure, optical emission from the InP shell can be tuned by changing the InP shell thickness, including pushing deeper into the NIR than current InP QDs. Colloidal synthesis methods including hot injection precipitation of the ZnSe core and a modified successive ion layer adsorption and reaction (SILAR) method for stepwise shell deposition were used to promote growth of core/shell/shell materials with varying thicknesses of the InP shell. By controlling the number of injections of indium and phosphorous precursor material, the emission peak was tuned from 515 nm to 845 nm (2.41 - 1.47 eV) with consistent full width half maximum (FWHM) values of the emission peak 0.32 eV. To confer water solubility, the nanoparticles were encapsulated in PEGylated phospholipid micelles, and multiplexing of NIR-emitting InP QDs was demonstrated using an IVIS imaging system. These materials show potential for multiplexed imaging of targeted QD contrast agents in the first optical tissue window.

Fragility of chalcogenide glass in relation to characteristic temperature T0/Tg

Science.gov (United States)

Shaker, A. M.; Shanker Rao, T.; Lilly Shanker Rao, T.; Venkataraman, K.

2018-03-01

The present study reports the mutual relationship between the fragility index m and the characteristic temperature T0/Tg. The fragility of the chalcogenide amorphous glass of Ge10Se50Te40 is calculated by utilizing glass transition temperature (Tg) measured by DSC (Differential Scanning Calorimetry) at different heating rates (β) in the range 5 to 20 K/min. Vogel-Fulcher-Tammann (VFT) equation is fitted to the data of Tg. In addition to the VFT method, three other methods are also used to evaluate m. The fragility index m of the Ge10Se50Te40 system showed the trend of decrease with increasing heating rate but remained stable around 22 for the heating rate 10 K/min. The value of m for the glass is near the lower limit (m ≈ 16) this indicates the alloy is a strong glass forming material in accordance of Angell’s interpretation of fragility. The calculated values of characteristic temperature T0/Tg is very close to 1 which also indicates that clearly the system is most fragile.

Scanning tunneling microscopy on iron-chalcogenide superconductor Fe(Se, Te) single crystal

International Nuclear Information System (INIS)

Ukita, R.; Sugimoto, A.; Ekino, T.

2011-01-01

We show scanning tunneling microscopy/spectroscopy (STM/STS) results of Fe(Se, Te). STM topography shows square arrangements of spots with the lattice spacing 0.37 nm. Te and Se atoms are randomly distributed in the STM topography. The STM topography of FeTe exhibits clusters of separated iron atoms. We have investigated the iron-chalcogenide superconductor Fe(Se, Te) using a low-temperature scanning tunneling microscopy/spectroscopy (STM/STS) technique. STM topography at 4.9 K shows clear regular square arrangements of spots with the lattice spacing ∼0.37 nm, from which what we observe are attributed to Se or Te atomic plane. In the topography, brighter and darker atomic spots are randomly distributed, which are most probably due to Te and Se atoms, respectively. For the FeTe compound, the topography exhibits clusters of the bright spots probably arising from separated iron atoms distributing over several Te lattice sites. The STS measurements clarify the existence of the large-size gap with 2Δ = 0.4-0.6 eV.

Alkali-templated surface nanopatterning of chalcogenide thin films: a novel approach toward solar cells with enhanced efficiency.

Science.gov (United States)

Reinhard, Patrick; Bissig, Benjamin; Pianezzi, Fabian; Hagendorfer, Harald; Sozzi, Giovanna; Menozzi, Roberto; Gretener, Christina; Nishiwaki, Shiro; Buecheler, Stephan; Tiwari, Ayodhya N

2015-05-13

Concepts of localized contacts and junctions through surface passivation layers are already advantageously applied in Si wafer-based photovoltaic technologies. For Cu(In,Ga)Se2 thin film solar cells, such concepts are generally not applied, especially at the heterojunction, because of the lack of a simple method yielding features with the required size and distribution. Here, we show a novel, innovative surface nanopatterning approach to form homogeneously distributed nanostructures (<30 nm) on the faceted, rough surface of polycrystalline chalcogenide thin films. The method, based on selective dissolution of self-assembled and well-defined alkali condensates in water, opens up new research opportunities toward development of thin film solar cells with enhanced efficiency.

Surface relief and refractive index gratings patterned in chalcogenide glasses and studied by off-axis digital holography.

Science.gov (United States)

Cazac, V; Meshalkin, A; Achimova, E; Abashkin, V; Katkovnik, V; Shevkunov, I; Claus, D; Pedrini, G

2018-01-20

Surface relief gratings and refractive index gratings are formed by direct holographic recording in amorphous chalcogenide nanomultilayer structures As 2 S 3 -Se and thin films As 2 S 3 . The evolution of the grating parameters, such as the modulation of refractive index and relief depth in dependence of the holographic exposure, is investigated. Off-axis digital holographic microscopy is applied for the measurement of the photoinduced phase gratings. For the high-accuracy reconstruction of the wavefront (amplitude and phase) transmitted by the fabricated gratings, we used a computational technique based on the sparse modeling of phase and amplitude. Both topography and refractive index maps of recorded gratings are revealed. Their separated contribution in diffraction efficiency is estimated.

Propagation of evanescent waves in multimode chalcogenide fiber immersed in an aqueous acetone solution: theory and experiment

Science.gov (United States)

Korsakova, S. V.; Romanova, E. A.; Velmuzhov, A. P.; Kotereva, T. V.; Sukhanov, M. V.; Shiryaev, V. S.

2017-04-01

Chalcogenide fibers are considered as a base for creation of a fiber-optical platform for the mid-IR evanescent wave spectroscopy. In this work, transmittance of a multimode fiber made of Ge26As17Se25Te32 glass, immersed into an aqueous acetone solution was measured in the range of wavelengths 5 - 9 microns at various concentrations of the solution. A theoretical approach based on electromagnetic theory of optical fibers has been applied for analysis of evanescent modes propagation in the fiber. Attenuation coefficients calculated for each HE1m evanescent mode increase with the mode radial order m. This effect can be used for optimisation of the fiber-optic sensing elements for the mid-IR spectroscopy.

Investigation of the dynamics of a nonlinear optical response in glassy chalcogenide semiconductors by the pump–probe method

Science.gov (United States)

Romanova, E. A.; Kuzyutkina, Yu S.; Shiryaev, V. S.; Guizard, S.

2018-03-01

An analysis of the results of measurements by using the pump–probe method with a femtosecond resolution in time and computer simulation of the charge carrier kinetics have revealed two types of a nonlinear optical response in samples of chalcogenide glasses belonging to the As – S – Se system, irradiated by 50-fs laser pulses with a wavelength of 0.79 μm. The difference in the nonlinear dynamics is due to the difference in the photoexcitation character, because laser radiation can be absorbed either through bound states in the band gap or without their participation, depending on the ratio of the pump photon energy to the bandgap energy.

Eliminating Crystals in Non-Oxide Optical Fiber Preforms and Optical Fibers

Science.gov (United States)

Tucker, Dennis S.; LaPointe, Michael R.

2012-01-01

Non ]oxide fiber optics such as heavy metal fluoride and chalcogenide glasses are extensively used in infrared transmitting applications such as communication systems, chemical sensors, and laser fiber guides for cutting, welding and medical surgery. The addition of rare earths such as erbium, enable these materials to be used as fiber laser and amplifiers. Some of these glasses however are very susceptible to crystallization. Even small crystals can lead to light scatter and a high attenuation coefficient, limiting their usefulness. Previously two research teams found that microgravity suppressed crystallization in heavy metal fluoride glasses. Looking for a less expensive method to suppress crystallization, ground based research was performed utilizing an axial magnetic field. The experiments revealed identical results to those obtained via microgravity processing. This research then led to a patented process for eliminating crystals in optical fiber preforms and the resulting optical fibers. In this paper, the microgravity results will be reviewed as well as patents and papers relating to the use of magnetic fields in various material and glass processing applications. Finally our patent to eliminate crystals in non ]oxide glasses utilizing a magnetic field will be detailed.

Fluorescence of Er3+ doped La2S3.3Ga2S3 glasses

International Nuclear Information System (INIS)

Reisfeld, R.; Bornstein, A.

1978-01-01

In this paper the authors report the preparation and fluorescence of Er 3+ in chalcogenide glasses. In the oxide glasses it has been shown that the multiphonon transition rates of the RE are independent of the coupling between a given oxide glass and rare earth ion, but dependent exponentially on the number of phonons of highest energy bridging the emitting and next-lower level. It is of interest to establish whether changing the glass matrix will affect the amount of electron phonon coupling. In addition, because of their low phonon energy and high refractive index, the RE doped chalcogenide glasses will form a new type of fluorescent material. This may be of interest in new RE lasers. (Auth.)

Radiation-sensitive material and method of recording information upon radiation-sensitive material

International Nuclear Information System (INIS)

Petrov, V.V.; Krjuchin, A.A.

1981-01-01

The invention can be employed for recording binary information in memory units of electronic computers, in video-recording equipment, laser recording devices and other recording means. The proposed radiation-sensitive material comprises a metallic layer made of silver, or copper, or nickel, or thallium, or alloy thereof, an inorganic material layer made of arsenic chalcogenide, or antimony chalcogenide, or bismuth chalcogenide, and a separation layer disposed between the metallic layer and the inorganic material layer made of a material which is inert relative to said layers, which separation layer has a thickness sufficient for preventing interaction between the metallic layer and the inorganic material layer when the radiation-sensitive materials is exposed to electromagnetic or corpuscular radiation having a power density lower than a threshold value required for the breakdown of the separation layer in the area exposed to radiation. The separation layer can be made from As, Sb, Si or Ge or their oxides, metallic oxides of e.g. Al, Ti, V or Fe, or from polyorganosiloxane films. (author)

Photodegradation of neonicotinoid insecticides in water by semiconductor oxides.

Science.gov (United States)

Fenoll, José; Garrido, Isabel; Hellín, Pilar; Flores, Pilar; Navarro, Simón

2015-10-01

The photocatalytic degradation of three neonicotinoid insecticides (NIs), thiamethoxam (TH), imidacloprid (IM) and acetamiprid (AC), in pure water has been studied using zinc oxide (ZnO) and titanium dioxide (TiO2) as photocatalysts under natural sunlight and artificial light irradiation. Photocatalytic experiments showed that the addition of these chalcogenide oxides in tandem with the electron acceptor (Na2S2O8) strongly enhances the degradation rate of these compounds in comparison with those carried out with ZnO and TiO2 alone and photolytic tests. Comparison of catalysts showed that ZnO is the most efficient for the removal of such insecticides in optimal conditions and at constant volumetric rate of photon absorption. Thus, the complete disappearance of all the studied compounds was achieved after 10 and 30 min of artificial light irradiation, in the ZnO/Na2S2O8 and TiO2/Na2S2O8 systems, respectively. The highest degradation rate was noticed for IM, while the lowest rate constant was obtained for AC under artificial light irradiation. In addition, solar irradiation was more efficient compared to artificial light for the removal of these insecticides from water. The main photocatalytic intermediates detected during the degradation of NIs were identified.

Quantum dot infrared photodetectors based on indium phosphide

International Nuclear Information System (INIS)

Gebhard, T.

2011-01-01

The subject of this work is a systematic study of quantum dot infrared photodetectors based on indium-phosphide substrate by means of various spectroscopic and electronic measurement methods in order to understand the physical and technological processes. This enables a concise definition of strategies in order to realize next generation devices in this material system and to gain overall progress in the research field of quantum dot infrared photodetectors. The interpretation of the experimental results is supported by analytical and numerical simulations. The samples, grown by collaboration partners, were characterized using differential transmission and fast Fourier transform infrared spectroscopy, with a special emphasis on the latter one. Therefore, samples both in wedged waveguide geometry and samples with gold coated mesa structures have been processed. A large part of the discussion is dedicated to the current voltage characteristic of the devices, due to its large importance for device optimization, i.e. the reduction of the dark current plays a crucial role in the research field of high temperature infrared photon-detection. Further, results of photoluminescence measurements, performed by collaboration partners, have been used in order to attain a more complete picture of the samples' electronic band structure and in order to obtain complementary information with respect to other measurement methods applied within the experimental work and the simulation of the structures. In agreement to the simulations, a photocurrent response was observed at 6 and at 12 μm up to a temperature of 80 K, depending on the samples' design. The principle of parameter scaling was applied to the samples, in order to assign physical effects either to details in the samples' design or to technological quality aspects, i.e. the doping level and the thickness of the capping layer was varied. In addition to that a quantum well was introduced within a series of samples in order to

Glass transition behavior and crystallization kinetics of Cu0.3(SSe20)0.7 chalcogenide glass

International Nuclear Information System (INIS)

Soliman, A.A.

2005-01-01

The glass transition behavior and crystallization kinetics of Cu 0.3 (SSe 20 ) 0.7 chalcogenide glass were investigated using differential scanning calorimetry (DSC), X-ray diffraction (XRD). Two crystalline phases (SSe 20 and Cu 2 Se) were identified after annealing the glass at 773 K for 24 h. The activation energy of the glass transition (E g ), the activation energy of crystallization (E c ), the Avrami exponent (n) and the dimensionality of growth (m) were determined. Results indicate that this glass crystallizes by a two-stage bulk crystallization process upon heating. The first transformation, in which SSe 20 precipitates from the amorphous matrix with a three-dimensional crystal growth. The second transformation, in which the residual amorphous phase transforms into Cu 2 Se compound with a two-dimensional crystal growth

KFeSbTe3: A quaternary chalcogenide aerogel for preferential adsorption of polarizable hydrocarbons and gases

KAUST Repository

Ahmed, Ejaz

2015-01-01

The first telluride-based quaternary aerogel KFeSbTe3 is synthesized by a sol-gel metathesis reaction between Fe(OAc)2 and K3SbTe3 in dimethyl formamide. The aerogel has an exceptionally large surface area 652 m2 g-1 which is amongst the highest reported for chalcogenide-based aerogels. This predominantly mesoporous material shows preferential adsorption for toluene vapors over cyclohexane or cyclopentane and CO2 over CH4 or H2. The remarkably high adsorption capacity for toluene (9.31 mmol g-1) and high selectivity for gases (CO2/H2: 121 and CO2/CH4: 75) suggest a potential use of such materials in adsorption-based separation processes for the effective purification of hydrocarbons and gases. © The Royal Society of Chemistry 2015.

Glass forming tendencies of chalcogenides of the system (As2Se3)sub(1-x):(T12Se)sub(x)

International Nuclear Information System (INIS)

Majid, C.A.

1982-07-01

In this paper glass forming capabilities of chalcogenide glasses based on As 2 Se 3 with T1 2 Se concentrations are discussed. The studies were made using the differential thermal analysis (DTA) technique. These studies show that the glass forming tendency of As 2 Se 3 decreases as the concentrations of T1 2 Se molecules are increased. Also these studies show that with addition of T1 2 Se, the glass transition temperature Tsub(g) of As 2 Se 3 decreases, suggesting a tendency for weaker bonding and hence less stability of T1-rich compositions. (author)

Assessing the efficiency of aluminium phosphide and arsenic trioxide in controlling the Indian crested porcupine (hystrix indica) in an irrigated forest plantation or Punjab, Pakistan

International Nuclear Information System (INIS)

Khan, A.A.

2010-01-01

The Indian crested porcupine, Hystrix indica, is widely distributed in the irrigated forests of Punjab, Pakistan and causes serious damage to trees, nursery stocking, field crops and vegetables. Field trials were conducted to determine the efficacy of aluminium phosphide (Phostoxin, 3g tablets) and arsenic trioxide bait (at 2.5g per apple) against the porcupine in a forest plantation. For fumigation with phostoxin, tablets were used at the rate of four, five, six and seven tablets per den. Observations showed that four tablets were ineffective, five and six tablets provided partial control, while seven tablets provided complete control of porcupines. Baiting with arsenic trioxide also resulted in 89 % reduction of the porcupine population occupying the treated dens. (author)

Infrared and Raman spectroscopy study of AsS chalcogenide films prepared by plasma-enhanced chemical vapor deposition.

Science.gov (United States)

Mochalov, Leonid; Dorosz, Dominik; Kudryashov, Mikhail; Nezhdanov, Aleksey; Usanov, Dmitry; Gogova, Daniela; Zelentsov, Sergey; Boryakov, Aleksey; Mashin, Alexandr

2018-03-15

AsS chalcogenide films, where As content is 60-40at.%, have been prepared via a RF non-equilibrium low-temperature argon plasma discharge, using volatile As and S as the precursors. Optical properties of the films were studied in UV-visible-NIR region in the range from 0.2 to 2.5μm. Infrared and Raman spectroscopy have been employed for the elucidation of the molecular structure of the newly developed material. It was established that PECVD films possess a higher degree of transparency (up to 80%) and a wider transparency window (>20μm) in comparison with the "usual" AsS thin films, prepared by different thermal methods, which is highly advantageous for certain applications. Copyright © 2017 Elsevier B.V. All rights reserved.

Wild Band Edges: The Role of Bandgap Grading and Band-Edge Fluctuations in High-Efficiency Chalcogenide Devices: Preprint

Energy Technology Data Exchange (ETDEWEB)

Repins, Ingrid; Mansfield, Lorelle; Kanevce, Ana; Jensen, Soren A.; Kuciauskas, Darius; Glynn, Stephen; Barnes, Teresa; Metzger, Wyatt; Burst, James; Jiang, Chun-Sheng; Dippo, Patricia; Harvey, Steve; Teeter, Glenn; Perkins, Craig; Egaas, Brian; Zakutayev, Andriy; Alsmeier, J.-H.; Lussky, T.; Korte, L.; Wilks, R. G.; Bar, M.; Yan, Y.; Lany, Stephan; Zawadzki, Pawel; Park, Ji-Sang; Wei, Suhuai

2016-06-16

Band-edge effects -- including grading, electrostatic fluctuations, bandgap fluctuations, and band tails -- affect chalcogenide device efficiency. These effects now require more careful consideration as efficiencies increase beyond 20%. Several aspects of the relationships between band-edge phenomena and device performance for NREL absorbers are examined. For Cu(In,Ga)Se2 devices, recent increases in diffusion length imply changes to optimum bandgap profile. The origin, impact, and modification of electrostatic and bandgap fluctuations are also discussed. The application of the same principles to devices based on CdTe, kesterites, and emerging absorbers (Cu2SnS3, CuSbS2), considering differences in materials properties and defect formation energies, is examined.

Chalcogenide glasses for device application modified by high-energy irradiation

International Nuclear Information System (INIS)

Kavetskyy, T.; Shpotyuk, O.

2006-01-01

Full text: Chalcogenide glasses (ChG) or chemical compounds of chalcogen atoms (S, Se or Te, but not O) with some elements from IV-th and V-th groups of the Periodic Table (typically As, Ge, Sb, Bi, etc. ) obtained by melt quenching, are a perspective for application in modern optoelectronics, photonics, telecommunications, acoustic-optics, xerography, lithography, etc. This uniqueness is due to extremely high sensitivity of ChG to external influences, associated, presumably, with high steric flexibility proper to glassy-like network with low average atomic coordination (chalcogen atoms are typically two-fold coordinated in a glassy-like network), relatively large internal free volume and specific lp-character of electronic states localized at a valence-band top. However, at present, the further possibilities for conventional chemical/technological methods to prepare ChG are fully exhausted. One of the steps to resolve this problem is post-technological modification of ChG using possibilities of high-energy irradiation. This work is focused on new advanced radiation-modified ChG for device application in optoelectronics. The attractive practical use of these non-crystalline materials is tightly connected with radiation-induced defect formation processes. For the first time, we consider the possibilities of Raman scattering along with X-ray diffraction and positron annihilation lifetime spectroscopy to characterize microstructural mechanisms of radiation-induced effects in ChG. (authors)

Strong correlations and the search for high-Tc superconductivity in chromium pnictides and chalcogenides

Science.gov (United States)

Pizarro, J. M.; Calderón, M. J.; Liu, J.; Muñoz, M. C.; Bascones, E.

2017-02-01

Undoped iron superconductors accommodate n =6 electrons in five d orbitals. Experimental and theoretical evidence shows that the strength of correlations increases with hole doping, as the electronic filling approaches half filling with n =5 electrons. This evidence delineates a scenario in which the parent compound of iron superconductors is the half-filled system, in analogy to cuprate superconductors. In cuprates the superconductivity can be induced upon electron or hole doping. In this work we propose to search for high-Tc superconductivity and strong correlations in chromium pnictides and chalcogenides with n slave-spin and multiorbital random-phase-approximation calculations we analyze the strength of the correlations and the superconducting and magnetic instabilities in these systems with the main focus on LaCrAsO. We find that electron-doped LaCrAsO is a strongly correlated system with competing magnetic interactions, with (π ,π ) antiferromagnetism and nodal d -wave pairing being the most plausible magnetic and superconducting instabilities, respectively.

Line defects on As2Se3-Chalcogenide photonic crystals for the design of all-optical power splitters and digital logic gates

Science.gov (United States)

Saghaei, Hamed; Zahedi, Abdulhamid; Karimzadeh, Rouhollah; Parandin, Fariborz

2017-10-01

In this paper, a triangular two-dimensional photonic crystal (PhC) of As2Se3-chalcogenide rods in air is presented and its photonic band diagram is calculated by plane wave method. In this structure, an optical waveguide is obtained by creating a line defect (eliminating rods) in diagonal direction of PhC. Numerical simulations based on finite difference time domain method show that when self-collimated beams undergo total internal reflection at the PhC-air interface, a total reflection of 90° occurs for the output beams. We also demonstrate that by decreasing the radius of As2Se3-chalcogenide instead of eliminating a diagonal line, a two-channel optical splitter will be designed. In this case, incoming self-collimated beams can be divided into the reflected and transmitted beams with arbitrary power ratio by adjusting the value of their radii. Based on these results, we propose a four-channel optical splitter using four line defects. The power ratio among output channels can be controlled systematically by varying the radius of rods in the line defects. We also demonstrate that by launching two optical sources with the same intensity and 90° phase difference from both perpendicular faces of the PhC, two logic OR and XOR gates will be achieved at the output channels. These optical devices have some applications in photonic integrated circuits for controlling and steering (managing) the light as desired.

Direct femtosecond laser writing of buried infrared waveguides in chalcogenide glasses

Science.gov (United States)

Le Coq, D.; Bychkov, E.; Masselin, P.

2016-02-01

Direct laser writing technique is now widely used in particular in glass, to produce both passive and active photonic devices. This technique offers a real scientific opportunity to generate three-dimensional optical components and since chalcogenide glasses possess transparency properties from the visible up to mid-infrared range, they are of great interest. Moreover, they also have high optical non-linearity and high photo-sensitivity that make easy the inscription of refractive index modification. The understanding of the fundamental and physical processes induced by the laser pulses is the key to well-control the laser writing and consequently to realize integrated photonic devices. In this paper, we will focus on two different ways allowing infrared buried waveguide to be obtained. The first part will be devoted to a very original writing process based on a helical translation of the sample through the laser beam. In the second part, we will report on another original method based on both a filamentation phenomenon and a point by point technique. Finally, we will demonstrate that these two writing techniques are suitable for the design of single mode waveguide for wavelength ranging from the visible up to the infrared but also to fabricate optical components.

Nanoscale Device Properties of Tellurium-based Chalcogenide Compounds

Science.gov (United States)

Dahal, Bishnu R.

The great progress achieved in miniaturization of microelectronic devices has now reached a distinct bottleneck, as devices are starting to approach the fundamental fabrication and performance limit. Even if a major breakthrough is made in the fabrication process, these scaled down electronic devices will not function properly since the quantum effects can no longer be neglected in the nanoscale regime. Advances in nanotechnology and new materials are driving novel technologies for future device applications. Current microelectronic devices have the smallest feature size, around 10 nm, and the industry is planning to switch away from silicon technology in the near future. The new technology will be fundamentally different. There are several leading technologies based on spintronics, tunneling transistors, and the newly discovered 2-dimensional material systems. All of these technologies are at the research level, and are far from ready for use in making devices in large volumes. This dissertation will focus on a very promising material system, Te-based chalcogenides, which have potential applications in spintronics, thermoelectricity and topological insulators that can lead to low-power-consumption electronics. Very recently it was predicted and experimentally observed that the spin-orbit interaction in certain materials can lead to a new electronic state called topological insulating phase. The topological insulator, like an ordinary insulator, has a bulk energy gap separating the highest occupied electronic band from the lowest empty band. However, the surface states in the case of a three-dimensional or edge states in a two-dimensional topological insulator allow electrons to conduct at the surface, due to the topological character of the bulk wavefunctions. These conducting states are protected by time-reversal symmetry, and cannot be eliminated by defects or chemical passivation. The edge/surface states satisfy Dirac dispersion relations, and hence the physics

The influence of Ge on optical and thermo- mechanical properties of S-Se chalcogenide glasses

Science.gov (United States)

Samudrala, Kavitha; Babu Devarasetty, Suresh

2018-05-01

S-Se-Ge glasses were prepared by melt quenching method to investigate the effect of Germanium on thermo-mechanical and optical properties of chalcogenide glasses. The glassy nature of the samples has been verified by x-ray diffraction and DSC studies that the samples are glassy in nature. The optical band gap of the samples was estimated by the absorption spectrum fitting method. The optical band gap increased from 1.61 ev for x = 0 sample to 1.90 ev for x = 40 sample and is explained in terms of cohesive energies. The basic thermo-mechanical parameters such as micro-hardness, Volume (Vh) and formation energy (Eh) of micro voids in the glassy network, as well as the modulus of Elasticity (E) have been calculated for prepared glasses.in present glasses. The variation in these parameters with Ge content correlated with heat of atomization of alloys.

Photoelectric properties of ITO/p(+)-p(-)-InP solar cells in linearly polarized light

NARCIS (Netherlands)

Botnaryuk, VM; Gorchak, LV; Raevskii, SD; Sherban, DA; Rud, VY; Rud, YV

Indium phosphide heterostructures and transparent conducting films of wide-gap oxides have previously been used in the development of highly efficient solar cells, making it possible to bring their efficiencies up to 18% [M, M. Koltun, Optics and Metrology of Solar Cells [in Russian], Nauka, Moscow

Atomistic investigations on the mechanical properties and fracture mechanisms of indium phosphide nanowires.

Science.gov (United States)

Pial, Turash Haque; Rakib, Tawfiqur; Mojumder, Satyajit; Motalab, Mohammad; Akanda, M A Salam

2018-03-28

The mechanical properties of indium phosphide (InP) nanowires are an emerging issue due to the promising applications of these nanowires in nanoelectromechanical and microelectromechanical devices. In this study, molecular dynamics simulations of zincblende (ZB) and wurtzite (WZ) crystal structured InP nanowires (NWs) are presented under uniaxial tension at varying sizes and temperatures. It is observed that the tensile strengths of both types of NWs show inverse relationships with temperature, but are independent of the size of the nanowires. Moreover, applied load causes brittle fracture by nucleating cleavage on ZB and WZ NWs. When the tensile load is applied along the [001] direction, the direction of the cleavage planes of ZB NWs changes with temperature. It is found that the {111} planes are the cleavage planes at lower temperatures; on the other hand, the {110} cleavage planes are activated at elevated temperatures. In the case of WZ NWs, fracture of the material is observed to occur by cleaving along the (0001) plane irrespective of temperature when the tensile load is applied along the [0001] direction. Furthermore, the WZ NWs of InP show considerably higher strength than their ZB counterparts. Finally, the impact of strain rate on the failure behavior of InP NWs is also studied, and higher fracture strengths and strains at higher strain rates are found. With increasing strain rate, the number of cleavages also increases in the NWs. This paper also provides in-depth understanding of the failure behavior of InP NWs, which will aid the design of efficient InP NWs-based devices.

High-precision measurements of the compressibility of chalcogenide glasses at a hydrostatic pressure up to 9 GPa

Energy Technology Data Exchange (ETDEWEB)

Brazhkin, V. V., E-mail: brazhkin@hppi.troitsk.ru [Vereshchagin Institute of High-Pressure Physics (Russian Federation); Bychkov, E. [Universite du Littoral, LPCA, UMR 8101 CNRS (France); Tsiok, O. B. [Vereshchagin Institute of High-Pressure Physics (Russian Federation)

2016-08-15

The volumes of glassy germanium chalcogenides GeSe{sub 2}, GeS{sub 2}, Ge{sub 17}Se{sub 83}, and Ge{sub 8}Se{sub 92} are precisely measured at a hydrostatic pressure up to 8.5 GPa. The stoichiometric GeSe{sub 2} and GeS{sub 2} glasses exhibit elastic behavior in the pressure range up to 3 GPa, and their bulk modulus decreases at pressures higher than 2–2.5 GPa. At higher pressures, inelastic relaxation processes begin and their intensity is proportional to the logarithm of time. The relaxation rate for the GeSe{sub 2} glasses has a pronounced maximum at 3.5–4.5 GPa, which indicates the existence of several parallel structural transformation mechanisms. The nonstoichiometric glasses exhibit a diffuse transformation and inelastic behavior at pressures above 1–2 GPa. The maximum relaxation rate in these glasses is significantly lower than that in the stoichiometric GeSe{sub 2} glasses. All glasses are characterized by the “loss of memory” of history: after relaxation at a fixed pressure, the further increase in the pressure returns the volume to the compression curve obtained without a stop for relaxation. After pressure release, the residual densification in the stoichiometric glasses is about 7% and that in the Ge{sub 17}Se{sub 83} glasses is 1.5%. The volume of the Ge{sub 8}Se{sub 92} glass returns to its initial value within the limits of experimental error. As the pressure decreases, the effective bulk moduli of the Ge{sub 17}Se{sub 83} and Ge{sub 8}Se{sub 92} glasses coincide with the moduli after isobaric relaxation at the stage of increasing pressure, and the bulk modulus of the stoichiometric GeSe{sub 2} glass upon decreasing pressure noticeably exceeds the bulk modulus after isobaric relaxation at the stage of increasing pressure. Along with the reported data, our results can be used to draw conclusions regarding the diffuse transformations in glassy germanium chalcogenides during compression.

Spectroscopic investigation of the chemical and electronic properties of chalcogenide materials for thin-film optoelectronic devices

Science.gov (United States)

Horsley, Kimberly Anne

Chalcogen-based materials are at the forefront of technologies for sustainable energy production. This progress has come only from decades of research, and further investigation is needed to continue improvement of these materials. For this dissertation, a number of chalcogenide systems were studied, which have applications in optoelectronic devices, such as LEDs and Photovoltaics. The systems studied include Cu(In,Ga)Se2 (CIGSe) and CuInSe 2 (CISe) thin-film absorbers, CdTe-based photovoltaic structures, and CdTe-ZnO nanocomposite materials. For each project, a sample set was prepared through collaboration with outside institutions, and a suite of spectroscopy techniques was employed to answer specific questions about the system. These techniques enabled the investigation of the chemical and electronic structure of the materials, both at the surface and towards the bulk. CdS/Cu(In,Ga)Se2 thin-films produced from the roll-to-roll, ambient pressure, Nanosolar industrial line were studied. While record-breaking efficiency cells are usually prepared in high-vacuum (HV) or ultra-high vacuum (UHV) environments, these samples demonstrate competitive mass-production efficiency without the high-cost deposition environment. We found relatively low levels of C contaminants, limited Na and Se oxidation, and a S-Se intermixing at the CdS/CIGSe interface. The surface band gap compared closely to previously investigated CIGSe thin-films deposited under vacuum, illustrating that roll-to-roll processing is a promising and less-expensive alternative for solar cell production. An alternative deposition process for CuInSe2 was also studied, in collaboration with the University of Luxembourg. CuInSe2 absorbers were prepared with varying Cu content and surface treatments to investigate the potential to produce an absorber with a Cu-rich bulk and Cu-poor surface. This is desired to combine the bulk characteristics of reduced defects and larger grains in Cu-rich films, while maintaining

Structural characterization of two new quaternary chalcogenides: CuCo{sub 2}InTe{sub 4} and CuNi{sub 2}InTe{sub 4}

Energy Technology Data Exchange (ETDEWEB)

Delgado, Gerzon E.; Grima-Gallardo, Pedro; Nieves, Luis, E-mail: gerzon@ula.ve [Universidad de Los Andes, Merida (Venezuela, Bolivarian Republic of); Cabrera, Humberto [Centro Multidisciplinario de Ciencias, Instituto Venezolano de Investigaciones Cientificas (IVIC), Merida (Venezuela, Bolivarian Republic of); Glenn, Jennifer R.; Aitken, Jennifer A. [Department of Chemistry and Biochemistry, Duquesne University, Pittsburgh, PA (United States)

2016-11-15

The crystal structure of the chalcogenide compounds CuCo{sub 2}InTe{sub 4} and CuNi{sub 2}InTe{sub 4} , two new members of the I-II{sub 2}-III-VI{sub 4} family, were characterized by Rietveld refinement using X-ray powder diffraction data. Both materials crystallize in the tetragonal space group I4-bar 2m (No. 121), Z = 2, with a stannite-type structure, with the binaries CoTe and NiTe as secondary phases. (author)

Synthesis of metals chalcogenides nano-particles from H{sub 2}X (X=S, Se, Te) produced electrochemically; Synthese de nanoparticules de chalcogenures de metaux a partir de H{sub 2}X (X=S, Se, Te) produit electrochimiquement

Energy Technology Data Exchange (ETDEWEB)

Bastide, S.; Tena-Zaera, R.; Alleno, E.; Godart, C.; Levy-Clement, C. [Centre National de la Recherche Scientifique (CNRS), Lab. de Chimie Metallurgique des Terres Rares, 94 - Thiais (France); Hodes, G. [Weizmann Institute of Science, Rehovot (Israel)

2006-07-01

In this work, an electrochemical method to produce H{sub 2}X (X=S, Se, Te) hydrides in a controlled way (without being able to store them) and to transfer them directly in the synthesis reactor has been perfected. By this method, the use of H{sub 2}Te has been possible. The method uses the reduction of the elementary chalcogenide in acid medium. The Te being conductor, it can be directly used as electrode, on the other hand S and Se are insulators. Nevertheless, graphite-S or Se conducing composite electrodes can also be used. When the electrolyte composition (pH, salts presence) is well adjusted, the essential of the cathodic current is consumed by the chalcogenide reduction (low evolution of H{sub 2}) with faradic yields of about 100% for H{sub 2}S and H{sub 2}Se and 40% for HeTe. The use of H{sub 2}X allows the synthesis of nano-particles of metals chalcogenides directly by reaction with dissolved metallic salts in aqueous or organic medium and precipitation. Thus it has been possible to prepare all the CdX compounds under the form of nano-particles of diameter between 3 and 5 nm by bubbling of the gaseous hydrides in aqueous acetate solutions of Cd. In producing concomitantly H{sub 2}S and H{sub 2}Se, nano-particles of solid solutions CdS{sub x}Se{sub 1-x} have been synthesized too. (O.M.)

Synergy in lignin upgrading by a combination of Cu-based mixed oxide and Ni-phosphide catalysts in supercritical ethanol

NARCIS (Netherlands)

Koranyi, T.I.; Huang, X.; Coumans, A.E.; Hensen, E.J.M.

2017-01-01

The depolymerization of lignin to bioaromatics usually requires a hydrodeoxygenation (HDO) step to lower the oxygen content. A mixed Cu–Mg–Al oxide (CuMgAlOx) is an effective catalyst for the depolymerization of lignin in supercritical ethanol. We explored the use of Ni-based cocatalysts, i.e.

Conduction mechanism and the dielectric relaxation process of a-Se75Te25-xGax (x=0, 5, 10 and 15 at wt%) chalcogenide glasses

International Nuclear Information System (INIS)

Yahia, I.S.; Hegab, N.A.; Shakra, A.M.; Al-Ribaty, A.M.

2012-01-01

Se 75 Te 25-x Ga x (x=0, 5, 10 and 15 at wt%) chalcogenide compositions were prepared by the well known melt quenching technique. Thin films with different thicknesses in the range (185-630 nm) of the obtained compositions were deposited by thermal evaporation technique. X-ray diffraction patterns indicate that the amorphous nature of the obtained films. The ac conductivity and the dielectric properties of the studied films have been investigated in the frequency range (10 2 -10 5 Hz) and in the temperature range (293-333 K). The ac conductivity was found to obey the power low ω s where s≤1 independent of film thickness. The temperature dependence of both ac conductivity and the exponent s can be well interpreted by the correlated barrier hopping (CBH) model. The experimental results of the dielectric constant ε 1 and dielectric loss ε 2 are frequency and temperature dependent. The maximum barrier height W m calculated from the results of the dielectric loss according to the Guintini equation, and agrees with that proposed by the theory of hopping of charge carriers over a potential barrier as suggested by Elliott for chalcogenide glasses. The density of localized state was estimated for the studied film compositions. The variation of the studied properties with Ga content was also investigated. The correlation between the ac conduction and the dielectric properties were verified.

Physico-chemical and optical properties of Er3+-doped and Er3+/Yb3+-co-doped Ge25Ga9.5Sb0.5S65 chalcogenide glass.

Czech Academy of Sciences Publication Activity Database

Himics, D.; Střižík, L.; Holubová, J.; Beneš, L.; Pálka, K.; Frumarová, Božena; Oswald, Jiří; Tverjanovich, A. S.; Wágner, T.

2017-01-01

Roč. 89, č. 4 (2017), s. 429-436 ISSN 0033-4545. [International Conference Solid State Chemistry 2016 /12./. Prague, 18.09.2016-23.09.2016] Institutional support: RVO:61389013 ; RVO:68378271 Keywords : chalcogenide glasses * erbium * Ga-Ge-Sb-S Subject RIV: CA - Inorganic Chemistry; CA - Inorganic Chemistry (FZU-D) OBOR OECD: Inorganic and nuclear chemistry; Inorganic and nuclear chemistry (FZU-D) Impact factor: 2.626, year: 2016

Plasmonic doped semiconductor nanocrystals: Properties, fabrication, applications and perspectives

Science.gov (United States)

Kriegel, Ilka; Scotognella, Francesco; Manna, Liberato

2017-02-01

Degenerately doped semiconductor nanocrystals (NCs) are of recent interest to the NC community due to their tunable localized surface plasmon resonances (LSPRs) in the near infrared (NIR). The high level of doping in such materials with carrier densities in the range of 1021cm-3 leads to degeneracy of the doping levels and intense plasmonic absorption in the NIR. The lower carrier density in degenerately doped semiconductor NCs compared to noble metals enables LSPR tuning over a wide spectral range, since even a minor change of the carrier density strongly affects the spectral position of the LSPR. Two classes of degenerate semiconductors are most relevant in this respect: impurity doped semiconductors, such as metal oxides, and vacancy doped semiconductors, such as copper chalcogenides. In the latter it is the density of copper vacancies that controls the carrier concentration, while in the former the introduction of impurity atoms adds carriers to the system. LSPR tuning in vacancy doped semiconductor NCs such as copper chalcogenides occurs by chemically controlling the copper vacancy density. This goes in hand with complex structural modifications of the copper chalcogenide crystal lattice. In contrast the LSPR of degenerately doped metal oxide NCs is modified by varying the doping concentration or by the choice of host and dopant atoms, but also through the addition of capacitive charge carriers to the conduction band of the metal oxide upon post-synthetic treatments, such as by electrochemical- or photodoping. The NIR LSPRs and the option of their spectral fine-tuning make accessible important new features, such as the controlled coupling of the LSPR to other physical signatures or the enhancement of optical signals in the NIR, sensing application by LSPR tracking, energy production from the NIR plasmon resonance or bio-medical applications in the biological window. In this review we highlight the recent advances in the synthesis of various different plasmonic

Electron irradiation induced reduction of the permittivity in chalcogenide glass (As2S3) thin film

KAUST Repository

San Roman Alerigi, Damian; Anjum, Dalaver H.; Zhang, Yaping; Yang, Xiaoming; Ben Slimane, Ahmed; Ng, Tien Khee; Hedhili, Mohamed N.; Alsunaidi, Mohammad; Ooi, Boon S.

2013-01-01

In this paper, we investigate the effect of electron beam irradiation on the dielectric properties of As 2 S 3 chalcogenide glass. By means of low-loss electron energy loss spectroscopy, we derive the permittivity function, its dispersive relation, and calculate the refractive index and absorption coefficients under the constant permeability approximation. The measured and calculated results show a heretofore unseen phenomenon: a reduction in the permittivity of ? 40 %. Consequently a reduction of the refractive index of 20%, hence, suggests a conspicuous change in the optical properties of the material under irradiation with a 300 keV electron beam. The plausible physical phenomena leading to these observations are discussed in terms of the homopolar and heteropolar bond dynamics under high energy absorption. The reported phenomena, exhibited by As 2 S 3-thin film, can be crucial for the development of photonics integrated circuits using electron beam irradiation method. © 2013 American Institute of Physics.

Occupational phosphine gas poisoning at veterinary hospitals from dogs that ingested zinc phosphide--Michigan, Iowa, and Washington, 2006-2011.

Science.gov (United States)

2012-04-27

Zinc phosphide (Zn3P2) is a readily available rodenticide that, on contact with stomach acid and water, produces phosphine (PH3), a highly toxic gas. Household pets that ingest Zn3P2 often will regurgitate, releasing PH3 into the air. Veterinary hospital staff members treating such animals can be poisoned from PH3 exposure. During 2006-2011, CDC's National Institute for Occupational Safety and Health (NIOSH) received reports of PH3 poisonings at four different veterinary hospitals: two in Michigan, one in Iowa, and one in Washington. Each of the four veterinary hospitals had treated a dog that ingested Zn3P2. Among hospital workers, eight poisoning victims were identified, all of whom experienced transient symptoms related to PH3 inhalation. All four dogs recovered fully. Exposure of veterinary staff members to PH3 can be minimized by following phosphine product precautions developed by the American Veterinary Medical Association (AVMA). Exposure of pets, pet owners, and veterinary staff members to PH3 can be minimized by proper storage, handling, and use of Zn3P2 and by using alternative methods for gopher and mole control, such as snap traps.

Molecular Control of the Nanoscale: Effect of Phosphine–Chalcogenide Reactivity on CdS–CdSe Nanocrystal Composition and Morphology

Energy Technology Data Exchange (ETDEWEB)

Ruberu, T. Purnima A.; Albright, Haley R.; Callis, Brandon; Ward, Brittney; Cisneros, Joana; Fan, Hua-Jun; Vela, Javier

2012-04-22

We demonstrate molecular control of nanoscale composition, alloying, and morphology (aspect ratio) in CdS–CdSe nanocrystal dots and rods by modulating the chemical reactivity of phosphine–chalcogenide precursors. Specific molecular precursors studied were sulfides and selenides of triphenylphosphite (TPP), diphenylpropylphosphine (DPP), tributylphosphine (TBP), trioctylphosphine (TOP), and hexaethylphosphorustriamide (HPT). Computational (DFT), NMR (31P and 77Se), and high-temperature crossover studies unambiguously confirm a chemical bonding interaction between phosphorus and chalcogen atoms in all precursors. Phosphine–chalcogenide precursor reactivity increases in the order: TPPE < DPPE < TBPE < TOPE < HPTE (E = S, Se). For a given phosphine, the selenide is always more reactive than the sulfide. CdS1–xSex quantum dots were synthesized via single injection of a R3PS–R3PSe mixture to cadmium oleate at 250 °C. X-ray diffraction (XRD), transmission electron microscopy (TEM), and UV/Vis and PL optical spectroscopy reveal that relative R3PS and R3PSe reactivity dictates CdS1–xSex dot chalcogen content and the extent of radial alloying (alloys vs core/shells). CdS, CdSe, and CdS1–xSex quantum rods were synthesized by injection of a single R3PE (E = S or Se) precursor or a R3PS–R3PSe mixture to cadmium–phosphonate at 320 or 250 °C. XRD and TEM reveal that the length-to-diameter aspect ratio of CdS and CdSe nanorods is inversely proportional to R3PE precursor reactivity. Purposely matching or mismatching R3PS–R3PSe precursor reactivity leads to CdS1–xSex nanorods without or with axial composition gradients, respectively. We expect these observations will lead to scalable and highly predictable “bottom-up” programmed syntheses of finely heterostructured nanomaterials with well-defined architectures and properties that are tailored for precise applications.

Photoelectrochemical studies on aqueous suspensions of some ...

Indian Academy of Sciences (India)

KASEM K KASEM∗ and AUBREY FINLEY. School of Sciences ... CdS/ZnS semiconductor (SC) nanoparticle in phosphate buffers containing [Fe(CN)6]4−. Manipulations of ... of the doped oxides or chalcogenides, and consequently alters the ...

Influence of annealing conditions on the optical and structural properties of spin-coated As(2)S(3) chalcogenide glass thin films.

Science.gov (United States)

Song, Shanshan; Dua, Janesha; Arnold, Craig B

2010-03-15

Spin-coating of chalcogenide glass is a low-cost, scalable method to create optical grade thin films, which are ideal for visible and infrared applications. In this paper, we study the influence of annealing on optical parameters of As(2)S(3) films by examining UV-visible and infrared spectroscopy and correlating the results to changes in the physical properties associated with solvent removal. Evaporation of excess solvent results in a more highly coordinated, denser glass network with higher index and lower absorption. Depending on the annealing temperature and time, index values ranging from n = 2.1 to the bulk value (n = 2.4) can be obtained, enabling a pathway to materials optimization.

Controlled Synthesis of Uniform Cobalt Phosphide Hyperbranched Nanocrystals Using Tri- n -octylphosphine Oxide as a Phosphorus Source

KAUST Repository

Zhang, Haitao; Ha, Don-Hyung; Hovden, Robert; Kourkoutis, Lena Fitting; Robinson, Richard D.

2011-01-01

A new method to produce hyperbranched Co 2P nanocrystals that are uniform in size, shape, and symmetry was developed. In this reaction tri-n-octylphosphine oxide (TOPO) was used as both a solvent and a phosphorus source. The reaction exhibits a novel monomer-saturation-dependent tunability between Co metal nanoparticle (NP) and Co 2P NP products. The morphology of Co 2P can be controlled from sheaflike structures to hexagonal symmetric structures by varying the concentration of the surfactant. This unique product differs significantly from other reported hyperbranched nanocrystals in that the highly anisotropic shapes can be stabilized as the majority shape (>84%). This is the first known use of TOPO as a reagent as well as a coordinating background solvent in NP synthesis. © 2011 American Chemical Society.

Controlled Synthesis of Uniform Cobalt Phosphide Hyperbranched Nanocrystals Using Tri- n -octylphosphine Oxide as a Phosphorus Source

KAUST Repository

Zhang, Haitao

2011-01-12

A new method to produce hyperbranched Co 2P nanocrystals that are uniform in size, shape, and symmetry was developed. In this reaction tri-n-octylphosphine oxide (TOPO) was used as both a solvent and a phosphorus source. The reaction exhibits a novel monomer-saturation-dependent tunability between Co metal nanoparticle (NP) and Co 2P NP products. The morphology of Co 2P can be controlled from sheaflike structures to hexagonal symmetric structures by varying the concentration of the surfactant. This unique product differs significantly from other reported hyperbranched nanocrystals in that the highly anisotropic shapes can be stabilized as the majority shape (>84%). This is the first known use of TOPO as a reagent as well as a coordinating background solvent in NP synthesis. © 2011 American Chemical Society.

Electrical switching phenomenon and memory effect in the semiconductor chalcogenide glass Ge0.10 As0.20 Te0.70

International Nuclear Information System (INIS)

Haro, M.; Marquez, E.; Villares, P.; Jimenez-Garay, R.

1987-01-01

Electrical switching phenomenon, as well as the memory effect in the semiconductor chalcogenide glass Ge 0.10 As 0.20 Te 0.70 has been studied. A device with a plano-punctual interelectrode configuration has been designed and built, so that the electrical stimuli may be applied correctly. This device permits adequate positioning of the upper electrode, as well as contact pressure regulation. The I-V characteristics in the OFF-state have been obtained, showing a marked non-linear character. Equally, a relation has been found between the threshold voltage and electrical resistance parameters, indicating that the electrical power giving rise to the phenomenon is constant. Finally, memory effects showing a sudden reduction in electrical resistance, as well as interelectrode filaments, have been observed. (author)

Surface functionalization of two-dimensional metal chalcogenides by Lewis acid-base chemistry

Science.gov (United States)

Lei, Sidong; Wang, Xifan; Li, Bo; Kang, Jiahao; He, Yongmin; George, Antony; Ge, Liehui; Gong, Yongji; Dong, Pei; Jin, Zehua; Brunetto, Gustavo; Chen, Weibing; Lin, Zuan-Tao; Baines, Robert; Galvão, Douglas S.; Lou, Jun; Barrera, Enrique; Banerjee, Kaustav; Vajtai, Robert; Ajayan, Pulickel

2016-05-01

Precise control of the electronic surface states of two-dimensional (2D) materials could improve their versatility and widen their applicability in electronics and sensing. To this end, chemical surface functionalization has been used to adjust the electronic properties of 2D materials. So far, however, chemical functionalization has relied on lattice defects and physisorption methods that inevitably modify the topological characteristics of the atomic layers. Here we make use of the lone pair electrons found in most of 2D metal chalcogenides and report a functionalization method via a Lewis acid-base reaction that does not alter the host structure. Atomic layers of n-type InSe react with Ti4+ to form planar p-type [Ti4+n(InSe)] coordination complexes. Using this strategy, we fabricate planar p-n junctions on 2D InSe with improved rectification and photovoltaic properties, without requiring heterostructure growth procedures or device fabrication processes. We also show that this functionalization approach works with other Lewis acids (such as B3+, Al3+ and Sn4+) and can be applied to other 2D materials (for example MoS2, MoSe2). Finally, we show that it is possible to use Lewis acid-base chemistry as a bridge to connect molecules to 2D atomic layers and fabricate a proof-of-principle dye-sensitized photosensing device.

GaAsP on GaP top solar cells

Science.gov (United States)

Mcneely, J. B.; Negley, G. H.; Barnett, A. M.

1985-01-01

GaAsP on GaP top solar cells as an attachment to silicon bottom solar cells are being developed. The GaAsP on GaP system offers several advantages for this top solar cell. The most important is that the gallium phosphide substrate provides a rugged, transparent mechanical substrate which does not have to be removed or thinned during processing. Additional advantages are that: (1) gallium phosphide is more oxidation resistant than the III-V aluminum compounds, (2) a range of energy band gaps higher than 1.75 eV is readily available for system efficiency optimization, (3) reliable ohmic contact technology is available from the light-emitting diode industry, and (4) the system readily lends itself to graded band gap structures for additional increases in efficiency.

Synthesis and Characterization of Quaternary Metal Chalcogenide Aerogels for Gas Separation and Volatile Hydrocarbon Adsorption

KAUST Repository

Edhaim, Fatimah A.

2017-11-01

In this dissertation, the metathesis route of metal chalcogenide aerogel synthesis was expanded by conducting systematic studies between polysulfide building blocks and the 1st-row transition metal linkers. Resulting materials were screened as sorbents for selective gas separation and volatile organic compounds adsorption. They showed preferential adsorption of polarizable gases (CO2) and organic compounds (toluene). Ion exchange and heavy metal remediation properties have also been demonstrated. The effect of the presence of different counter-ion within chalcogel frameworks on the adsorption capacity of the chalcogels was studied on AFe3Zn3S17 (A= K, Na, and Rb) chalcogels. The highest adsorption capacity toward hydrocarbons and gases was observed on Rb based chalcogels. Adopting a new building block [BiTe3]3- with the 1st-row transition metal ions results in the formation of three high BET surface area chalcogels, KCrBiTe3, KZnBiTe3, and KFeBiTe3. The resulting chalcogels showed preferential adsorption of toluene vapor, and remarkable selectivity of CO2, indicating the potential future use of chalcogels in adsorption-based gas or hydrocarbon separation processes. The synthesis and characterization of the rare earth chalcogels NaYSnS4, NaGdSnS4, and NaTbSnS4 are also reported. Rare earth metal ions react with the thiostannate clusters in formamide solution forming extended polymeric networks by gelation. Obtained chalcogels have high BET surface areas, and showed notable adsorption capacity toward CO2 and toluene vapor. These chalcogels have also been engaged in the absorption of different organic molecules. The results reveal the ability of the chalcogels to distinguish among organic molecules on their electronic structures; hence, they could be used as sensors. Furthermore, the synthesis of metal chalcogenide aerogels Co0.5Sb0.33MoS4 and Co0.5Y0.33MoS4 by the sol-gel method is reported. In this system, the building blocks [MoS4]2- chelated with Co2+ and (Sb3

Pulsed laser deposition of chalcogenide sulfides from multi- and single-component targets: the non-stoichiometric material transfer

DEFF Research Database (Denmark)

Schou, Jørgen; Ganskukh, Mungunshagai; Ettlinger, Rebecca Bolt

2018-01-01

The mass transfer from target to films is incongruent for chalcogenide sulfides in contrast to the expectations of pulsed laser deposition (PLD) as a stoichiometric film growth process. Films produced from a CZTS (Cu2ZnSnS4) multi-component target have no Cu below a fluence threshold of 0.2 J/cm2......, and the Cu content is also very low at low fluence from a single-component target. Above this threshold, the Cu content in the films increases almost linearly up to a value above the stoichiometric value, while the ratio of the concentration of the other metals Zn to Sn (Zn/Sn) remains constant. Films...... of a similar material CTS (Cu2SnS3) have been produced by PLD from a CTS target and exhibits a similar trend in the same fluence region. The results are discussed on the basis of solid-state data and the existing data from the literature....

Thallous chalcogenide (Tl 6I 4Se) for radiation detection at X-ray and γ-ray energies

Science.gov (United States)

Liu, Zhifu; Peters, John A.; Wessels, Bruce W.; Johnsen, Simon; Kanatzidis, Mercouri G.

2011-12-01

The optical and charge transport properties of the thallous chalcogenide compound Tl6I4Se were characterized. The semiconductor crystals are grown by the modified Bridgman method. We have measured the refractive index, and absorption coefficient of the compound ranging from 300 to 1500 nm by analysis of the UV-vis-near IR transmission and reflection spectra. The band gap is 1.8 eV. For the evaluation of detector performance, the mobility-lifetime products for both the electron and hole carriers were measured. Tl6I4Se has mobility-lifetime products of 7.1×10-3 and 5.9×10-4 cm2/V for electron and hole carriers, respectively, which are comparable to those of Cd0.9Zn0.1Te. The γ-ray spectrum for a Tl6I4Se detector was measured. Its response to the 122 keV of 57Co source is comparable to that of Cd0.9Zn0.1Te.

Pr4N2S3 and Pr4N2Se3: two non-isostructural praseodymium(iii) nitride chalcogenides

International Nuclear Information System (INIS)

Lissner, Falk; Schleid, Thomas

2005-01-01

The non-isostructural nitride chalcogenides of praseodymium, Pr 4 N 2 S 3 and Pr 4 N 2 Se 3 , are formed by the reaction of the praseodymium metal with sodium azide (NaN 3 ), praseodymium trihalide (PrX 3 ; X = Cl, Br, I) and the respective chalcogen (sulfur or selenium) at 900 C in evacuated silica ampoules after seven days. Both crystallize monoclinically in space group C2/c (Pr 4 N 2 S 3 : a = 1788.57(9), b = 986.04(5), c = 1266.49(6) pm, β = 134.546(7) , Z = 8; Pr 4 N 2 Se 3 : a = 1311.76(7), b = 1017.03(5), c = 650.42(3) pm, β = 90.114(6) , Z = 4). The crystal structures of both compounds show a layered construction, dominated by N 3- -centred (Pr 3+ ) 4 tetrahedra which share a common edge first. Continuing linkage of the so resulting bitetrahedral [N 2 Pr 6 ] 12+ units via the non-connected vertices to layers according to [stack ∞ 2 ]{[N(Pr) 2/2 e (Pr') 2/2 v ] 3+ } forms different kinds of tetrahedral nets which can be described as layers consisting of ''four- and eight-rings'' for Pr 4 N 2 S 3 and as layers of ''six-rings'' for Pr 4 N 2 Se 3 . Whereas the crystal structure of Pr 4 N 2 S 3 exhibits four different Pr 3+ cations with coordination numbers of six (2 x) and seven (2 x) against N 3- and S 2- , the number of cations in the nitride selenide (Pr 4 N 2 Se 3 ) is reduced to half (Pr1 and Pr2) also having six- and sevenfold anionic coordination spheres. Further motifs for the connection of [NM 4 ] 9+ tetrahedra in crystal structures of nitride chalcogenides and halides of the rare-earth elements with ratios of N: M = 1: 2 are presented and discussed. (Abstract Copyright [2005], Wiley Periodicals, Inc.) [de

Wireless Chalcogenide Nanoionic-Based Radio-Frequency Switch

Science.gov (United States)

Nessel, James; Miranda, Felix

2013-01-01

A new nonvolatile nanoionic switch is powered and controlled through wireless radio-frequency (RF) transmission. A thin layer of chalcogenide glass doped with a metal ion, such as silver, comprises the operational portion of the switch. For the switch to function, an oxidizable electrode is made positive (anode) with respect to an opposing electrode (cathode) when sufficient bias, typically on the order of a few tenths of a volt or more, is applied. This action causes the metal ions to flow toward the cathode through a coordinated hopping mechanism. At the cathode, a reduction reaction occurs to form a metal deposit. This metal deposit creates a conductive path that bridges the gap between electrodes to turn the switch on. Once this conductive path is formed, no further power is required to maintain it. To reverse this process, the metal deposit is made positive with respect to the original oxidizable electrode, causing the dissolution of the metal bridge thereby turning the switch off. Once the metal deposit has been completely dissolved, the process self-terminates. This switching process features the following attributes. It requires very little to change states (i.e., on and off). Furthermore, no power is required to maintain the states; hence, the state of the switch is nonvolatile. Because of these attributes the integration of a rectenna to provide the necessary power and control is unique to this embodiment. A rectenna, or rectifying antenna, generates DC power from an incident RF signal. The low voltages and power required for the nanoionic switch control are easily generated from this system and provide the switch with a novel capability to be operated and powered from an external wireless device. In one realization, an RF signal of a specific frequency can be used to set the switch into an off state, while another frequency can be used to set the switch to an on state. The wireless, miniaturized, and nomoving- part features of this switch make it

Spectroscopic evidence for two-gap superconductivity in the quasi-1D chalcogenide Nb2Pd0.81S5

Science.gov (United States)

Park, Eunsung; Lee, Sangyun; Ronning, Filip; Thompson, Joe D.; Zhang, Qiu; Balicas, Luis; Lu, Xin; Park, Tuson

2018-04-01

Low-dimensional electronic systems with confined electronic wave functions have attracted interest due to their propensity toward novel quantum phases and their use in wide range of nanotechnologies. The newly discovered chalcogenide Nb2PdS5 possesses a quasi-one-dimensional electronic structure and becomes superconducting. Here, we report spectroscopic evidence for two-band superconductivity, where soft point-contact spectroscopic measurements in the superconducting (SC) state reveal Andreev reflection in the differential conductance G. Multiple peaks in G are observed at 1.8 K and explained by the two-band Blonder–Tinkham–Klapwijk model with two gaps Δ1  =  0.61 meV and Δ2  =  1.20 meV. The progressive evolution of G with temperature and magnetic field corroborates the multiple nature of the SC gaps.

Mössbauer studies of two-electron centers with negative correlation energy in crystalline and amorphous semiconductors

International Nuclear Information System (INIS)

Bordovsky, G. A.; Nemov, S. A.; Marchenko, A. V.; Seregin, P. P.

2012-01-01

The results of the study of donor U − -centers of tin and germanium in lead chalcogenides by Mössbauer emission spectroscopy are discussed. The published data regarding the identification of amphoteric U − -centers of tin in glassy binary arsenic and germanium chalcogenides using Mössbauer emission spectroscopy, and in multicomponent chalcogenide glasses using Mössbauer absorption spectroscopy are considered. Published data concerning the identification of two-atom U − -centers of copper in lattices of semimetal copper oxides by Mössbauer emission spectroscopy are analyzed. The published data on the detection of spatial inhomogeneity of the Bose-Einstein condensate in superconducting semiconductors and semimetal compounds, and on the existence of the correlation between the electron density in lattice sites and the superconducting transition temperature are presented. The principal possibility of using Mössbauer U − -centers as a tool for studying the Bose-Einstein condensation of electron pairs during the superconducting phase transition in semiconductors and semimetals is considered.

Asymmetric supercapacitors with metal-like ternary selenides and porous graphene electrodes

KAUST Repository

Xia, Chuan; Jiang, Qiu; Zhao, Chao; Beaujuge, Pierre; Alshareef, Husam N.

2016-01-01

nanostructured ternary nickel cobalt selenides result in a much higher areal capacitance (2.33 F cm−2 at 4 mA cm−2), better rate performance and cycling stability than their binary selenide equivalents, and other ternary oxides and chalcogenides. Those hybrid

Phase change cellular automata modeling of GeTe, GaSb and SnSe stacked chalcogenide films

Science.gov (United States)

Mihai, C.; Velea, A.

2018-06-01

Data storage needs are increasing at a rapid pace across all economic sectors, so the need for new memory technologies with adequate capabilities is also high. Phase change memories (PCMs) are a leading contender in the emerging race for non-volatile memories due to their fast operation speed, high scalability, good reliability and low power consumption. However, in order to meet the present and future storage demands, PCM technologies must further increase the storage density. Here, we employ a probabilistic cellular automata approach to explore the multi-step threshold switching from the reset (off) to the set (on) state in chalcogenide stacked structures. Simulations have shown that in order to obtain multi-step switching with high contrast among different resistance states, the stacked structure needs to contain materials with a large difference among their crystallization temperatures and careful tuning of strata thicknesses. The crystallization dynamics can be controlled through the external energy pulses applied to the system, in such a way that a balance between nucleation and growth in phase change behavior can be achieved, optimized for PCMs.

Size-controlled synthesis of chalcogen and chalcogenide nanoparticles using protic ionic liquids with imidazolium cation

International Nuclear Information System (INIS)

Meenatchi, Boominathan; Renuga, Velayutham; Manikandan, Ayyar

2016-01-01

Green synthesis of selenium (chalcogen) nanoparticles (SeNPs) has been successfully attained by simple wet chemical method that involves the reaction of six different protic ionic liquids with imidazolium cations and sodium hydrogen selenide (NaHSe) in the presence of poly ethylene glycol-600 (PEG-600) as an additional stabilizer. The obtained SeNPs were characterized using UV spectral (UV), Fourier transform infra-red (FT-IR), X-ray diffraction (XRD), thermogravimetric analysis (TGA), differential thermal analysis (DTA), scanning electron microscope (SEM) with energy dispersive X-ray (EDX) and high resolution transmission electron microscope (TEM) analysis. The results illustrate that the synthesized SeNPs are spherical in shape with size ranging 19-24 nm and possess good optical property with greater band gap energy, high thermal stability up to 330 .deg. C, low melting point of 218-220 .deg. C comparing to precursor selenium. Using the synthesized SeNPs, two chalcogenides such as ZnSe and CdSe semiconductor nanoparticles were synthesized and characterized using XRD, SEM with EDX and TEM analysis. The fabricated CdSe and ZnSe nanoparticles appeared like pebble and cluster structure with particle size of 29.97 nm and 22.73 nm respectively.

Size-controlled synthesis of chalcogen and chalcogenide nanoparticles using protic ionic liquids with imidazolium cation

Energy Technology Data Exchange (ETDEWEB)

Meenatchi, Boominathan [Cauvery College for Women, Tamilnadu (India); Renuga, Velayutham [National College, Tamilnadu (India); Manikandan, Ayyar [Bharath Institute of Higher Education and Research, Bharath University, Tamilnadu (India)

2016-03-15

Green synthesis of selenium (chalcogen) nanoparticles (SeNPs) has been successfully attained by simple wet chemical method that involves the reaction of six different protic ionic liquids with imidazolium cations and sodium hydrogen selenide (NaHSe) in the presence of poly ethylene glycol-600 (PEG-600) as an additional stabilizer. The obtained SeNPs were characterized using UV spectral (UV), Fourier transform infra-red (FT-IR), X-ray diffraction (XRD), thermogravimetric analysis (TGA), differential thermal analysis (DTA), scanning electron microscope (SEM) with energy dispersive X-ray (EDX) and high resolution transmission electron microscope (TEM) analysis. The results illustrate that the synthesized SeNPs are spherical in shape with size ranging 19-24 nm and possess good optical property with greater band gap energy, high thermal stability up to 330 .deg. C, low melting point of 218-220 .deg. C comparing to precursor selenium. Using the synthesized SeNPs, two chalcogenides such as ZnSe and CdSe semiconductor nanoparticles were synthesized and characterized using XRD, SEM with EDX and TEM analysis. The fabricated CdSe and ZnSe nanoparticles appeared like pebble and cluster structure with particle size of 29.97 nm and 22.73 nm respectively.

Strong 3D and 1D magnetism in hexagonal Fe-chalcogenides FeS and FeSe vs. weak magnetism in hexagonal FeTe.

Science.gov (United States)

Parker, David S

2017-06-13

We present a comparative theoretical study of the hexagonal forms of the Fe-chalcogenides FeS, FeSe and FeTe with their better known tetragonal forms. While the tetragonal forms exhibit only an incipient antiferromagnetism and experimentally show superconductivity when doped, the hexagonal forms of FeS and FeSe display a robust magnetism. We show that this strong magnetism arises from a van Hove singularity associated with the direct Fe-Fe c-axis chains in the generally more three-dimensional NiAs structure. We also find that hexagonal FeTe is much less magnetic than the other two hexagonal materials, so that unconventional magnetically-mediated superconductivity is possible, although a large T c value is unlikely.

Metal oxide, Group V-VI chalcogenides and GaN/AlGaN photodetectors

Science.gov (United States)

Hasan, Md. Rezaul

. Position of gate pad defined the center point of the image without tilting the image as the geometry of the gate pads were parallel to each other. And there was no effect of gate pad bonding wire orientation because of the larger width of gate pads. For the GaN/AlGaNHEMT, the effect of Al mole fraction in AlGaN layer and the effect of gate oxide on the DC and low frequency noise characterization was studied. MOSHEMT with SiO2 improved the Id(on)/I d(off) ratio up to more than 8 orders, while it is only 10 times in conventional HEMT. It was shown that the gate leakage and isolation leakage suppression efficiency improved dramatically with the oxide. Subthreshold swing (SS) of MOS-HEMTs with different Al mole fraction (from 20% to 35%) vary slightly from 72 mV/decade to 79 mV/decade, but the conventional GaN/AlGaN HEMT showed SS of 2.4V/decade. Low frequency noise study revealed the difference in transport mechanism between HEMT and MOS-HEMTs. By using Carrier Number Fluctuation (CNF) model on the measured data, it was found that the noise is predominantly coming from the surface states. While generation-recombination is very prominent in conventional HEMT, it is very weak and insignificant in both MOS-HEMTs at much higher frequencies. This study reveals that very high number of surface states assisting the tunneling in schottky/AlGaN barrier is responsible for unusually high leakage and higher noise level in conventional HEMT. Leakage level is improved from mA/mm range for HEMT to pA/mm range for MOS-HEMTs. Leakage suppression improvement and minimization of noise level can be mainly attributed to high quality SiO2. Hooge's constant was in the order of 5-6x10-3 in MOS-HEMTs, which is 5x10 -2 for conventional HEMT indicating much lower noise level in the MOS-HEMTs. (Abstract shortened by ProQuest.).

Chemical Reaction between Boric Acid and Phosphine Indicates Boric Acid as an Antidote for Aluminium Phosphide Poisoning

Directory of Open Access Journals (Sweden)

Motahareh Soltani

2016-08-01

Full Text Available Objectives: Aluminium phosphide (AlP is a fumigant pesticide which protects stored grains from insects and rodents. When it comes into contact with moisture, AlP releases phosphine (PH3, a highly toxic gas. No efficient antidote has been found for AlP poisoning so far and most people who are poisoned do not survive. Boric acid is a Lewis acid with an empty p orbital which accepts electrons. This study aimed to investigate the neutralisation of PH3 gas with boric acid. Methods: This study was carried out at the Baharlou Hospital, Tehran University of Medical Sciences, Tehran, Iran, between December 2013 and February 2014. The volume of released gas, rate of gas evolution and changes in pH were measured during reactions of AlP tablets with water, acidified water, saturated boric acid solution, acidified saturated boric acid solution, activated charcoal and acidified activated charcoal. Infrared spectroscopy was used to study the resulting probable adduct between PH3 and boric acid. Results: Activated charcoal significantly reduced the volume of released gas (P <0.01. Although boric acid did not significantly reduce the volume of released gas, it significantly reduced the rate of gas evolution (P <0.01. A gaseous adduct was formed in the reaction between pure AlP and boric acid. Conclusion: These findings indicate that boric acid may be an efficient and non-toxic antidote for PH3 poisoning.

The question about increasing of thermoelectrical Q and percent of the yield of the semiconductor material on the basis of chalcogenides of the bismuth and antimony under conditions of experimental-industrial production

International Nuclear Information System (INIS)

Magerramov, A.A.; Barkhalov, B.S.

2005-01-01

Full text : Different methods of the receiving of monocrystalline ingots of the semiconductor materials for thermo electrical inverter of energy have been considered. On the basis of the analyses of theoretical and experimental data generated series of recommendations, directed to increase thermo electrical Q receiving from thermo electrical materials and increasing percent of yield of semiconductor materials on the basis of chalcogenides of the bismuth and antimony on the basis of industrial production

Engineering of lead chalcogenide nanostructures for carrier multiplication: Core/shell, 1D, and 2D

Science.gov (United States)

Lin, Qianglu

Near infrared emitting semiconductors have been used widely in industry especially in solar-cell fabrications. The efficiency of single junction solar-cell can reach the Shockley-Queisser limit by using optimum band gap material such as silicon and cadmium telluride. The theoretical efficiency can be further enhanced through carrier multiplication, in which a high energy photon is absorbed and more than one electron-hole pair can be generated, reaching more than 100% quantum efficiency in the high energy region of sunlight. The realization of more than unity external quantum efficiency in lead selenide quantum dots solar cell has motivated vast investigation on lowering the carrier multiplication threshold and further improving the efficiency. This dissertation focuses on synthesis of lead chalcogenide nanostructures for their optical spectroscopy studies. PbSe/CdSe core/shell quantum dots were synthesized by cation exchange to obtain thick shells (up to 14 monolayers) for studies of visible and near infrared dual band emissions and carrier multiplication efficiency. By examining the reaction mechanism, a thermodynamic and a kinetic model are introduced to explain the vacancy driven cation exchange. As indicated by the effective mass model, PbSe/CdSe core/shell quantum dots has quasi-type-II band alignment, possessing electron delocalized through the entire quantum dot and hole localized in the core, which breaks down the symmetry of energy levels in the conduction and valence band, leading to hot-hole-assisted efficient multi-exciton generation and a lower carrier multiplication threshold to the theoretical value. For further investigation of carrier multiplication study, PbTe, possessing the highest efficiency among lead chalcogenides due to slow intraband cooling, is synthesized in one-dimensional and two-dimensional nanostructures. By using dodecanethiol as the surfactant, PbTe NRs can be prepared with high uniformity in width and resulted in fine quantum

A further step towards tuning the properties of metal-chalcogenide nanocapsules by replacing skeletal oxide by sulphide ligands.

Science.gov (United States)

Schäffer, Christian; Todea, Ana Maria; Bögge, Hartmut; Floquet, Sébastien; Cadot, Emmanuel; Korenev, Vladimir S; Fedin, Vladimir P; Gouzerh, Pierre; Müller, Achim

2013-01-14

Addition of [Mo(2)(V)O(2)(μ-O)(μ-S)(aq)](2+) linker-type units to a solution/dynamic library containing tungstates results via the formation of the complementary pentagonal {(W)W(5)} units logically in the self-assembly of a mixed oxide/sulphide {W(VI)(72)Mo(V)(60)}-type Keplerate, thereby demonstrating the ability to tune the capsule's skeletal softness (the (μ-O)(2) and (μ-S)(2) scenarios are known) and providing options to influence differently important capsule-substrate interactions.

Fabrication and characterization of Ge20Sb15Se65 chalcogenide glass rib waveguides for telecommunication wavelengths

International Nuclear Information System (INIS)

Li, Jun; Shen, Xiang; Sun, Junqiang; Vu, Khu; Choi, Duk-Yong; Wang, Rongping; Luther-Davies, Barry; Dai, Shixun; Xu, Tiefeng; Nie, Qiuhua

2013-01-01

We report on the fabrication and optical properties of Ge 20 Sb 15 Se 65 chalcogenide glass rib waveguides on a single photonic chip. Radio-frequency magnetron sputtering method is employed to deposit 1.36-μm-thick films and reactive ion etching with CHF 3 is used to pattern 0.76-μm-deep rib waveguides of 1–4 μm wide with low surface roughness and vertical sidewalls. Using lensed fibers, the insertion losses for rib waveguides of different widths are measured and propagation losses are estimated to be lower than 1 dB/cm. Finite difference method simulations and refractive index/curve fitting are used to observe a moderate normal dispersion of the waveguides at 1550 nm. - Highlights: • RF magnetron sputtering was used to deposit uniform Ge 20 Sb 15 Se 65 thin films. • CHF 3 reactive ion etching of rib waveguides vertical profile and smooth sidewall. • Insertion losses at 1550 nm measured and low propagation losses estimated. • Dispersion engineered by finite difference methods and refractive curve fitting

ac conductivity and dielectric properties of amorphous Se80Te20-xGex chalcogenide glass film compositions

International Nuclear Information System (INIS)

Hegab, N.A.; Afifi, M.A.; Atyia, H.E.; Farid, A.S.

2009-01-01

Thin films of the prepared Se 80 Te 20-x Ge x (x = 5, 7 and 10 at.%) were prepared by thermal evaporation technique. X-ray diffraction patterns showed that the films were in amorphous state. The ac conductivity and dielectric properties of the investigated film compositions were studied in the frequency range 0.1-100 kHz and in temperature range (303-373 K). The experimental results indicated that the ac conductivity and the dielectric properties depended on the temperature and frequency. The ac conductivity is found to obey the ω s law, in accordance with the hopping model, s is found to be temperature dependent (s 1 and dielectric loss ε 2 were found to decrease with frequency and increase with temperature. The maximum barrier height W m , calculated from dielectric measurements according to Guintini equation, agrees with that proposed by the theory of hopping over potential barrier as suggested by Elliott in case of chalcogenide glasses. The density of localized states was estimated for the studied film compositions. The variation of the studied properties with Ge content was also investigated.

Solution-based synthesis and design of late transition metal chalcogenide materials for oxygen reduction reaction (ORR).

Science.gov (United States)

Gao, Min-Rui; Jiang, Jun; Yu, Shu-Hong

2012-01-09

Late transition metal chalcogenide (LTMC) nanomaterials have been introduced as a promising Pt-free oxygen reduction reaction (ORR) electrocatalysts because of their low cost, good ORR activity, high methanol tolerance, and facile synthesis. Herein, an overview on the design and synthesis of LTMC nanomaterials by solution-based strategies is presented along with their ORR performances. Current solution-based synthetic approaches towards LTMC nanomaterials include a hydrothermal/solvothermal approach, single-source precursor approach, hot-injection approach, template-directed soft synthesis, and Kirkendall-effect-induced soft synthesis. Although the ORR activity and stability of LTMC nanomaterials are still far from what is needed for practical fuel-cell applications, much enhanced electrocatalytic performance can be expected. Recent advances have emphasized that decorating the surface of the LTMC nanostructures with other functional nanoparticles can lead to much better ORR catalytic activity. It is believed that new synthesis approaches to LTMCs, modification techniques of LTMCs, and LTMCs with desirable morphology, size, composition, and structures are expected to be developed in the future to satisfy the requirements of commercial fuel cells. Copyright © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Strong 3D and 1D magnetism in hexagonal Fe-chalcogenides FeS and FeSe vs. weak magnetism in hexagonal FeTe

Energy Technology Data Exchange (ETDEWEB)

Parker, David S. [Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)

2017-06-13

We present a comparative theoretical study of the hexagonal forms of the Fe-chalcogenides FeS, FeSe and FeTe with their better known tetragonal forms. While the tetragonal forms exhibit only an incipient antiferromagnetism and experimentally show superconductivity when doped, the hexagonal forms of FeS and FeSe display a robust magnetism. We show that this strong magnetism arises from a van Hove singularity associated with the direct Fe-Fe c-axis chains in the generally more three-dimensional NiAs structure. We also find that hexagonal FeTe is much less magnetic than the other two hexagonal materials, so that unconventional magnetically-mediated superconductivity is possible, although a large T_c value is unlikely.

Impact of sulfur content on structural and optical properties of Ge20Se80-xSx chalcogenide glasses thin films

Science.gov (United States)

Dongol, M.; Elhady, A. F.; Ebied, M. S.; Abuelwafa, A. A.

2018-04-01

Chalcogenide system Ge20Se80-xSx (x = 0, 15 and 30%) thin films were prepared by thermal evaporation technique. The amorphous state of the samples was confirmed according to XRD. The structural changes occurring upon replacement Se by S was investigated using Raman spectroscopy. The optical properties of the as-deposited Ge20Se80-xSx thin films have been studied by analysis the transmittance T(λ) measured at room temperature in the wavelength range 200-2500 nm using Swanepoel's method. Urbach energy (Ee) and optical band gap (Eg) were strongly affected by sulfur concentration in the sample. The refractive index evaluated through envelope method was extrapolated by Cauchy dispersion relationship over the whole spectral range. Moreover, the dispersion of refractive index was analyzed in terms of the single-oscillator Wemple-Di Domenico model. The third-order nonlinear susceptibility (χ(3)) and nonlinear refractive index (n2) were calculated and discussed for different Ge20Se80-xSx (x = 0, 15 and 30%).

Phase change and optical band gap behavior of Se0.8S0.2 chalcogenide glass films

International Nuclear Information System (INIS)

Abdel Rafea, M.; Farid, Huda

2009-01-01

Se 0.8 S 0.2 chalcogenide glass films have been prepared by thermal vacuum evaporation technique with thickness 583 nm. Annealing process at T ≥ 333 K crystallizes the films and nanostructured films are formed. The crystallite size was increased to 24 nm as the annealing temperature increased to 373 K. Orthorhombic crystalline system was identified for the annealed films. SEM micrographs show that films consist of two parallel surfaces and the thickness was determined by cross section imaging. The optical transmittance is characterized by interference patterns as a result of these two parallel surfaces, besides their average value at longer wavelength decreases as a result of annealing process. The band gap, E g is red shifted due to crystallization by annealing. As the phase of the films changes from amorphous to crystalline in the annealing temperature range 333-363 K, a non sharp change of the band gap (E g ) is observed. This change was explained by Brus's model of the energy gap confinement behavior of the nanostructured films. The optical refractive index increases suddenly when the system starts to be crystallized by annealing

Neutron diffraction study of structural transformations in ternary systems of HgSe sub 1 sub - sub x S sub x mercury chalcogenides at high pressure

CERN Document Server

Voronin, V I; Berger, I F; Glazkov, V P; Kozlenko, D P; Savenko, B N; Tikhomirov, S V

2001-01-01

The structure of the ternary systems of the HgSe sub 1 sub - sub x S sub x mercury chalcogenides is studied at high pressures up to 35 kbar. It is established that by increase in the pressure in the HgSe sub 1 sub - sub x S sub x there takes place the transition from the sphalerite type cubic structure to the cinnabar type hexagonal structure, which is accompanied by the jump-like change in the elementary cell volume and interatomic distances. The parameters of the elementary cell and positional parameters of the Hg and Se/S for the hexagonal phase of high pressure are determined. The existence of the two-phase state in the area of the phase transformation is determined

Role of heat treatment on structural and optical properties of thermally evaporated Ga{sub 10}Se{sub 81}Pb{sub 9} chalcogenide thin films

Energy Technology Data Exchange (ETDEWEB)

El-Sebaii, A.A., E-mail: ahmedelsebaii@yahoo.com [Department of Physics, Faculty of Science, King Abdulaziz University, 80203 Jeddah 21589 (Saudi Arabia); Khan, Shamshad A. [Department of Physics, St. Andrews College, Gorakhpur 273001 (India); Al-Marzouki, F.M.; Faidah, A.S.; Al-Ghamdi, A.A. [Department of Physics, Faculty of Science, King Abdulaziz University, 80203 Jeddah 21589 (Saudi Arabia)

2012-08-15

Amorphous chalcogenides, based on Se, have become materials of commercial importance and were widely used for optical storage media. The present work deals with the structural and optical properties of Ga{sub 10}Se{sub 81}Pb{sub 9} ternary chalcogenide glass prepared by melt quenching technique. The glass transition, crystallization and melting temperatures of the synthesized glass were measured by non-isothermal DSC measurements at a constant heating rate of 30 K/min. Thin films of thickness 4000 A were prepared by thermal evaporation techniques on glass/Si (1 0 0) wafer substrate. These thin films were thermally annealed for two hours at three different annealing temperatures of 345, 360 and 375 K, which were in between the glass transition and crystallization temperatures of the Ga{sub 10}Se{sub 81}Pb{sub 9} glass. The structural, morphological and optical properties of as-prepared and annealed thin films were studied. Analysis of the optical absorption data showed that the rules of the non-direct transitions predominate. It was also found that the optical band gap decreases while the absorption coefficient, refractive index and extinction coefficient increase with increasing the annealing temperature. Due to the higher values of absorption coefficient and annealing dependence of the optical band gap and optical constants, the investigated material could be used for optical storage. - Highlights: Black-Right-Pointing-Pointer Annealing effect on structure and optical band gap has been investigated. Black-Right-Pointing-Pointer The amorphous nature has been verified by x-ray diffraction and DSC measurements. Black-Right-Pointing-Pointer Thermal annealing causes a decrease in optical band gap in Ga{sub 10}Se{sub 81}Pb{sub 9} thin films. Black-Right-Pointing-Pointer The decrease in optical band gap can be interpreted on the basis of amorphous-crystalline phase transformation. Black-Right-Pointing-Pointer Optical absorption data showed that the rules of the non

Characterization and formation of hydroxyapatite on Ti6Al4V coated by plasma electrolytic oxidation

International Nuclear Information System (INIS)

Durdu, Salih; Deniz, Ömer Faruk; Kutbay, Işıl; Usta, Metin

2013-01-01

Highlights: ► Ti6Al4V alloys were coated by PEO in calcium acetate and β-calcium glycerophosphate. ► Hydroxyapatite and calcium apatite based phases were directly formed on Ti6Al4V. ► Hydroxyapatite coatings were characterized systematically for different times. ► After 5 min, hydroxyapatite and calcium based phases begin to form on the coating. ► HAp on the coating is amorphous due to the rapid solidification during PEO. - Abstract: In this study, Ti6Al4V alloy was coated in the solution consisting of calcium acetate (CA) and β-calcium glycerophosphate (β-Ca-GP) by plasma electrolytic oxidation (PEO) to produce hydroxyapatite and calcium apatite-based composite used as of bioactive and biocompatible materials in biomedical applications. The phase structures, surface morphologies, functional groups of molecules, chemical compositions of the surfaces and the binding energies of atoms in the coating were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), attenuated total reflectance-Fourier transform infrared spectroscopy (ATR-FTIR) and X-ray photoelectron spectroscopy (XPS), respectively. Anatase, rutile, calcium oxide, titanium phosphide, whitlockite, tri-calcium phosphate (TCP), perovskite calcium titanate and hydroxyapatite phases on the coating were detected by XRD analysis. The surface of coatings produced by PEO method has a porous structure. The amount of amorphous hydroxyapatite is the highest value for the coating produced at 5 min in XPS and ATR-FTIR results, whereas the amount of crystalline hydroxyapatite has the highest value for coating produced at 120 min in XRD results.

MXP(M = Co/Ni)@carbon core-shell nanoparticles embedded in 3D cross-linked graphene aerogel derived from seaweed biomass for hydrogen evolution reaction.

Science.gov (United States)

Zhao, Wentong; Lu, Xiaoqing; Selvaraj, Manickam; Wei, Wei; Jiang, Zhifeng; Ullah, Nabi; Liu, Jie; Xie, Jimin

2018-05-24

Low-cost electrocatalysts play an important role in the hydrogen evolution reaction (HER). Particularly, transition metal phosphides (TMPs) are widely applied in the development of HER electrocatalysts. To improve the poor electrochemical reaction kinetics of HER, we introduce a facile way to synthesize carbon core-shell materials containing cobalt phosphide nanoparticles embedded in different graphene aerogels (GAs) (CoP@C-NPs/GA-x (x = 5, 10 and 20)) using seaweed biomass as precursors. The synthesized CoP@C-NPs/GA-5 exhibits efficient catalytic activity with small overpotentials of 120 and 225 mV at current densities of 10 mA cm-2, along with the low Tafel slopes of 57 and 66 mV dec-1, for HER in acidic and alkaline electrolytes, respectively. Compared with carbon aerogel (CA) containing cobalt phosphide nanoparticles (CoP-NPs@CA), the stability of CoP@C-NPs/GA-5 coated with carbon-shells (∼0.8 nm) was significantly improved in acidic electrolytes. We also prepared carbon core-shell materials containing nickel phosphide nanoparticles embedded in GA (Ni2P@C-NPs/GA) to further expand this synthetic route. The graphene-Ni2P@C aerogel shows a similar morphology and better catalytic activity for HER in acidic and alkaline electrolytes. In this work, the robust three-dimensional (3D) GA matrix with abundant open pores and large surface area provides unblocked channels for electrolyte contact and electronic transfer and enables very close contact between the catalyst and electrolyte. The MxP@C core-shell structure prevents the inactivation of MxP NPs during HER processes, and the thin graphene oxide (GO) layers and 3D CA together build up a 3D conductive matrix, which not only adjusts the volume expansion of MxP NPs as well as preventing their aggregation, but also provides a 3D conductive pathway for rapid charge transfer processes. The present synthetic strategy for phosphides via in situ phosphorization with 3D GA can be extended to other novel high

Enhanced hydrogen production from water via a photo-catalyzed reaction using chalcogenide d-element nanoparticles induced by UV light.

Science.gov (United States)

El Naggar, Ahmed M A; Nassar, Ibrahim M; Gobara, Heba M

2013-10-21

Hydrogen has the potential to meet the requirements as a clean non-fossil fuel in the future. The photocatalytic production of H2 through water splitting has been demonstrated and enormous efforts have been published. The present work is an attempt to enhance the production of H2 during water splitting using synthesized nanoparticles based on chalcogenide d-element semiconductors via a photochemical reaction under UV-light in the presence of methanol as a hole-scavenger. In general, the enhanced activity of a semiconductor is most likely due to the effective charge separation of photo generated electrons and holes in the semiconductors. Hence, the utilization of different semiconductors in combination can consequently provide better hydrogen production. Accordingly in this research work, two different semiconductors, with different concentrations, either used individually or combined together were introduced. They in turn produced a high concentration of H2 as detected and measured using gas chromatography. Herein, data revealed that the nano-structured semiconductors prepared through this work are a promising candidate in the production of an enhanced H2 flux under visible UV radiation.

Synchronous γ (Co60) photons and thermal processing induced insulator metal transition in amorphous chalcogenide As4Se3Te3 composition

Science.gov (United States)

El-Sayed, S. A.; Morsy, M. A.

2018-05-01

Amorphous chalcogenide composition AS4Se3Te3 is prepared by conventional quenching technique. The separate annealing or γ quanta irradiation not effect on the dc conductivity properties of the prepared composition. When the prepared samples are subjected to simultaneous annealing at temperature 413 K and γ quanta irradiation the dc conductivity increases. The dark dc conductivity increases by increasing the time of exposure to γ irradiation. At irradiation dose 1.47 × 104 Gy the dc conductivity starts to have metallic like conductivity character. These samples could be used as high temperature γ quanta dosimeter. By applying scaling theory on the samples irradiated with different dose of γ irradiation the critical exponents are determined and found to be temperature tends to zero. The steric value is low in the insulator side of conductivity, but high and almost saturated in the metallic side of conductivity.

A Simple, General Synthetic Route toward Nanoscale Transition Metal Borides.

Science.gov (United States)

Jothi, Palani R; Yubuta, Kunio; Fokwa, Boniface P T

2018-04-01

Most nanomaterials, such as transition metal carbides, phosphides, nitrides, chalcogenides, etc., have been extensively studied for their various properties in recent years. The similarly attractive transition metal borides, on the contrary, have seen little interest from the materials science community, mainly because nanomaterials are notoriously difficult to synthesize. Herein, a simple, general synthetic method toward crystalline transition metal boride nanomaterials is proposed. This new method takes advantage of the redox chemistry of Sn/SnCl 2 , the volatility and recrystallization of SnCl 2 at the synthesis conditions, as well as the immiscibility of tin with boron, to produce crystalline phases of 3d, 4d, and 5d transition metal nanoborides with different morphologies (nanorods, nanosheets, nanoprisms, nanoplates, nanoparticles, etc.). Importantly, this method allows flexibility in the choice of the transition metal, as well as the ability to target several compositions within the same binary phase diagram (e.g., Mo 2 B, α-MoB, MoB 2 , Mo 2 B 4 ). The simplicity and wide applicability of the method should enable the fulfillment of the great potential of this understudied class of materials, which show a variety of excellent chemical, electrochemical, and physical properties at the microscale. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Effect of various coal contaminants on the performance of solid oxide fuel cells: Part I. Accelerated testing

Energy Technology Data Exchange (ETDEWEB)

Bao, JianEr; Krishnan, Gopala N.; Jayaweera, Palitha; Perez-Mariano, Jordi; Sanjurjo, Angel [SRI International, 333 Ravenswood Ave, Menlo Park, CA 94025 (United States)

2009-09-05

The contaminants that are potentially present in the coal-derived gas stream and their thermochemical nature are discussed. Accelerated testing was carried out on Ni-YSZ/YSZ/LSM solid oxide fuel cells (YSZ: yttria stabilized zirconia and LSM: lanthanum strontium manganese oxide) for eight main kind of contaminants: CH{sub 3}Cl, HCl, As, P, Zn, Hg, Cd and Sb at the temperature range of 750-850 C. The As and P species, at 10 and 35 ppm, respectively, resulted in severe power density degradation at temperatures 800 C and below. SEM and EDX analysis indicated that As attacked the Ni region of the anode surface and the Ni current collector, caused the break of the current collector and the eventual cell failure at 800 C. The phosphorous containing species were found in the bulk of the anode, they were segregated and formed ''grain boundary'' like phases separating large Ni patches. These species are presumably nickel phosphide/phosphate and zirconia phosphate, which could break the Ni network for electron transport and inhibit the YSZ network for oxygen ion transport. The presence of 40 ppm CH{sub 3}Cl and 5 ppm Cd only affected the cell power density at above 800 C and Cd caused significant performance loss. Whereas the presence of 9 ppm Zn, 7 ppm Hg and 8 ppm Sb only degraded the cell power density by less than 1% during the 100 h test in the temperature range of 750-850 C. (author)

Thermo-chemical properties and electrical resistivity of Zr-based arsenide chalcogenides

Directory of Open Access Journals (Sweden)

A. Schlechte, R. Niewa, M. Schmidt, G. Auffermann, Yu. Prots, W. Schnelle, D. Gnida, T. Cichorek, F. Steglich and R. Kniep

2007-01-01

Full Text Available Ternary phases in the systems Zr–As–Se and Zr–As–Te were studied using single crystals of ZrAs1.40(1Se0.50(1 and ZrAs1.60(2Te0.40(1 (PbFCl-type of structure, space group P4/nmm as well as ZrAs0.70(1Se1.30(1 and ZrAs0.75(1Te1.25(1 (NbPS-type of structure, space group Immm. The characterization covers chemical compositions, crystal structures, homogeneity ranges and electrical resistivities. At 1223 K, the Te-containing phases can be described with the general formula ZrAsxTe2−x, with 1.53(1≤x≤1.65(1 (As-rich and 0.58(1≤x≤0.75(1 (Te-rich. Both phases are located directly on the tie-line between ZrAs2 and ZrTe2, with no indication for any deviation. Similar is true for the Se-rich phase ZrAsxSe2−x with 0.70(1≤x≤0.75(1. However, the compositional range of the respective As-rich phase ZrAsx−ySe2−x (0.03(1≤y≤0.10(1; 1.42(1≤x≤1.70(1 is not located on the tie-line ZrAs2–ZrSe2, and exhibits a triangular region of existence with intrinsic deviation of the composition towards lower non-metal contents. Except for ZrAs0.75Se1.25, from the homogeneity range of the Se-rich phase, all compounds under investigation show metallic characteristics of electrical resistivity at temperatures >20 K. Related uranium and thorium arsenide selenides display a typical magnetic field-independent rise of the resistivity towards lower temperatures, which has been explained by a non-magnetic Kondo effect. However, a similar observation has been made for ZrAs1.40Se0.50, which, among the Zr-based arsenide chalcogenides, is the only system with a large concentration of intrinsic defects in the anionic substructure.

Quaternary chalcogenides La{sub 3}Sn{sub 0.5}InS{sub 7} and La{sub 3}Sn{sub 0.5}InSe{sub 7}

Energy Technology Data Exchange (ETDEWEB)

Iyer, Abishek K.; Lee, Emma J.; Bernard, Guy M.; Michaelis, Vladimir K.; Mar, Arthur [Department of Chemistry, University of Alberta, Edmonton, AB (Canada); Yin, Wenlong [Department of Chemistry, University of Alberta, Edmonton, AB (Canada); Institute of Chemical Materials, China Academy of Engineering Physics, Mianyang (China)

2017-12-13

The quaternary chalcogenides La{sub 3}Sn{sub 0.5}InS{sub 7} and La{sub 3}Sn{sub 0.5}InSe{sub 7} were prepared by reactions of the elements at 1050 C and 950 C, respectively. They adopt noncentrosymmetric structures [hexagonal, space group P6{sub 3}, Z = 2; a = 10.2993(11) Aa, c = 6.0921(6) Aa for La{sub 3}Sn{sub 0.5}InS{sub 7}; a = 10.6533(7) Aa, c = 6.4245(4) Aa for La{sub 3}Sn{sub 0.5}InSe{sub 7}] in which the half-occupancy of Sn atoms within octahedral sites classifies them as belonging to the La{sub 3}Mn{sub 0.5}SiS{sub 7}-type branch of the large family of quaternary rare-earth chalcogenides RE{sub 3}M{sub 1-x}M{sup '}Ch{sub 7}. The site distribution in La{sub 3}Sn{sub 0.5}InCh{sub 7}, with higher-valent Sn atoms occupying octahedral instead of tetrahedral sites, is reversed from the typical situation observed in other RE{sub 3}M{sub 1-x}M{sup '}Ch{sub 7} compounds. The ordered distribution of Sn atoms in octahedral sites and In atoms in tetrahedral sites was evaluated by bond valence sum analyses. Moreover, {sup 119}Sn solid-state nuclear magnetic resonance (NMR) spectroscopy confirms the occupation of Sn{sup 4+} species exclusively within octahedral sites. An optical bandgap of 1.45 eV was found for La{sub 3}Sn{sub 0.5}InS{sub 7}. Band structure calculations on an ordered superstructure model of La{sub 3}Sn{sub 0.5}InS{sub 7} reveal that avoidance of strongly Sn-S antibonding levels is an important driving force for the Sn deficiency. (copyright 2017 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Nonresonant Faraday rotation in glassy semiconductors

Science.gov (United States)

van den Keybus, P.; Grevendonk, W.

1986-06-01

Nonresonant interband Faraday rotation in amorphous semiconductors, as a function of photon energy, may be described by an equation derived for direct transitions in crystalline semiconductors. In this paper it is shown how this equation may be obtained for the former case also, assuming a parabolic density of states function N(E) and a correlation between valence- and conduction-band states. The analysis of experiments on chalcogenide glasses reveals a Faraday-rotation energy gap EFRg that is significantly larger than the optical gap Eoptg. The effect is attributed to transitions between extended states, so that it is meaningful to compare EFRg with the mobility gap Eμg. For oxide glasses both gaps are comparable but for chalcogenide glasses EFRg is too large by a few tenths of 1 eV.

Low-loss, robust fusion splicing of silica to chalcogenide fiber for integrated mid-infrared laser technology development.

Science.gov (United States)

Thapa, Rajesh; Gattass, Rafael R; Nguyen, Vinh; Chin, Geoff; Gibson, Dan; Kim, Woohong; Shaw, L Brandon; Sanghera, Jasbinder S

2015-11-01

We demonstrate a low-loss, repeatable, and robust splice between single-mode silica fiber and single-mode chalcogenide (CHG) fiber. These splices are particularly difficult to create because of the significant difference in the two fibers' glass transition temperatures (∼1000°C) as well as the large difference in the coefficients of thermal expansion between the fibers (∼20×10(-6)/°C). With 90% light coupled through the silica-CHG fiber splice, predominantly in the fundamental circular-symmetric mode, into the core of the CHG fiber and with 0.5 dB of splice loss measured around the wavelength of 2.5 μm, after correcting only for the Fresnel loss, the silica-CHG splice offers excellent beam quality and coupling efficiency. The tensile strength of the splice is greater than 12 kpsi, and the laser damage threshold is greater than 2 W (CW) and was limited by the available laser pump power. We also utilized this splicing technique to demonstrate 2 to 4.5 μm ultrabroadband supercontinuum generation in a monolithic all-fiber system comprising a CHG fiber and a high peak power 2 μm pulsed Raman-shifted thulium fiber laser. This is a major development toward compact form factor commercial applications of soft-glass mid-IR fibers.

Thermoelectric properties of chalcogenide based Cu2+xZnSn1−xSe4

Directory of Open Access Journals (Sweden)

Ch. Raju

2013-03-01

Full Text Available Quaternary chalcogenide compounds Cu2+xZnSn1−xSe4 (0 ≤ x ≤ 0.15 were prepared by solid state synthesis. Rietveld powder X-ray diffraction (XRD refinements combined with Electron Probe Micro Analyses (EPMA, WDS-Wavelength Dispersive Spectroscopy and Raman spectra of all samples confirmed the stannite structure (Cu2FeSnS4-type as the main phase. In addition to the main phase, small amounts of secondary phases like ZnSe, CuSe and SnSe were observed. Transport properties of all samples were measured as a function of temperature in the range from 300 K to 720 K. The electrical resistivity of all samples decreases with an increase in Cu content except for Cu2.1ZnSn0.9Se4, most likely due to a higher content of the ZnSe. All samples showed positive Seebeck coefficients indicating that holes are the majority charge carriers. The thermal conductivity of doped samples was high compared to Cu2ZnSnSe4 and this may be due to the larger electronic contribution and the presence of the ZnSe phase in the doped samples. The maximum zT = 0.3 at 720 K occurs for Cu2.05ZnSn0.95Se4 for which a high-pressure torsion treatment resulted in an enhancement of zT by 30% at 625 K.

Effect of Se addition on optical and electrical properties of chalcogenide CdSSe thin films

Science.gov (United States)

Hassanien, A. S.; Akl, Alaa A.

2016-01-01

Compositional dependence of optical and electrical properties of chalcogenide CdSxSe1-x (0.4 ≥ x ≥ 0.0 at. %) thin films was studied. Cadmium sulphoselenide films were deposited by thermal evaporation technique at vacuum (8.2 × 10-4 Pa) onto preheated glass substrates (523 K). The evaporation rate and film thickness were kept constant at 2.50 nm/s and 375 ± 5 nm, respectively. X-ray diffractograms showed that, the deposited films have the low crystalline nature. Energy dispersive analysis by X-ray (EDAX) was used to check the compositional elements of deposited films. The absorption coefficient was determined from transmission and reflection measurements at room temperature in the wavelength range 300-2500 nm. Optical density, skin depth, optical energy gap and Urbach's parameters of CdSSe thin films have also been estimated. The direct optical energy gap decreased from 2.248 eV to 1.749 eV when the ratio of Se-content was increased from 0.60 to 1.00 . Conduction band and valance band positions were evaluated. The temperature dependence of dc-electrical resistivity in the temperature range (293-450 K) has been reported. Three conduction regions due to different conduction mechanisms were detected. Electrical sheet resistance, activation energy and pre-exponential parameters were discussed. The estimated values of optical and electrical parameters were strongly dependent upon the Se-content in CdSSe matrix.

Synergy in Lignin Upgrading by a Combination of Cu-Based Mixed Oxide and Ni-Phosphide Catalysts in Supercritical Ethanol.

Science.gov (United States)

Korányi, Tamás I; Huang, Xiaoming; Coumans, Alessandro E; Hensen, Emiel J M

2017-04-03

The depolymerization of lignin to bioaromatics usually requires a hydrodeoxygenation (HDO) step to lower the oxygen content. A mixed Cu-Mg-Al oxide (CuMgAlO x ) is an effective catalyst for the depolymerization of lignin in supercritical ethanol. We explored the use of Ni-based cocatalysts, i.e. Ni/SiO 2 , Ni 2 P/SiO 2 , and Ni/ASA (ASA = amorphous silica alumina), with the aim of combining lignin depolymerization and HDO in a single reaction step. While the silica-supported catalysts were themselves hardly active in lignin upgrading, Ni/ASA displayed comparable lignin monomer yield as CuMgAlO x . A drawback of using an acidic support is extensive dehydration of the ethanol solvent. Instead, combining CuMgAlO x with Ni/SiO 2 and especially Ni 2 P/SiO 2 proved to be effective in increasing the lignin monomer yield, while at the same time reducing the oxygen content of the products. With Ni 2 P/SiO 2 , the lignin monomer yield was 53 wt %, leading to nearly complete deoxygenation of the aromatic products.

Synthesis and Characterization of Novel Transition Metal Chalcogenide Phases for Energy Storage, Energy Conversion and Optoelectronics

Science.gov (United States)

Chen, Erica Maxine

Today's energy needs are primarily provided by fossil fuels, which are harvested from the earth. Consuming fossil fuels to provide energy for civilization releases products into the atmosphere that contribute to climate change. Ongoing efforts to combat the existential crisis which climate change presents many of the emerging and commercialized technologies for solar, thermoelectric and battery applications involve transition metal chalcogenides. Some of the materials used for these applications are expensive and rare, such as gallium, vanadium and indium, or have no merits towards environmental stewardship, such as cadmium and lead. Thus, the purpose of this work is to further the ongoing effort to discover and develop new materials which are able to meet or exceed benchmarks for their application. This work focuses on the development of various metal chalcogenide material systems featuring d-block transition metals selected for their contribution to alter structure and properties. Various thermal, electronic and optical properties can be changed through substitution or doping with additional elements to affect to the base composition or as part of a gradient composition series. After an extensive description of experimental methods which describe the associated materials synthesis, processing and characterization techniques in chapter 2, chapter 3 explores the Cu4-xLixS 2 phases for their contribution as further evidence in the formation of lithiated copper sulfide phases as part of the intercalation reaction before being converted to the binaries copper and lithium sulfide. Chapter 4 documents the development of Cu4TiSe4, a novel material with potential for thin-film photovoltaic technologies with its band gap in the range where the solar spectrum is the most bountiful (Eg,indirect = 1.16 eV, Eg,direct = 1.34 eV), an outstanding optical absorbance ( > 10-4 cm-1) outperforming commercially successful materials in the solar spectrum, and suitable for thin

A Novel Effect of CO2 Laser Induced Piezoelectricity in Ag2Ga2SiS6 Chalcogenide Crystals

Directory of Open Access Journals (Sweden)

Oleg V. Parasyuk

2016-08-01

Full Text Available We have discovered a substantial enhancement of the piezoelectric coefficients (from 10 to 78 pm/V in the chalcogenide Ag2Ga2SiS6 single crystals. The piezoelectric studies were done under the influence of a CO2 laser (wavelength 10.6 μm, time duration 200 ns, lasers with power densities varying up to 700 MW/cm2. Contrary to the earlier studies where the photoinduced piezoelectricity was done under the influence of the near IR lasers, the effect is higher by at least one order, which is a consequence of the phonon anharmonic contributions and photopolarizations. Such a discovery allows one to build infrared piezotronic devices, which may be used for the production of the IR laser tunable optoelectronic triggers and memories. This is additionally confirmed by the fact that analogous photoillumination by the near IR laser (Nd:YAG (1064 nm and Er:glass laser (1540 nm gives the obtained values of the effective piezoelectricity at of least one order less. The effect is completely reversible with a relaxation time up to several milliseconds. In order to clarify the role of free carriers, additional studies of photoelectrical spectra were done.

Electrochemical lithium and sodium intercalation into the tantalum-rich layered chalcogenides Ta2Se and Ta2Te3

International Nuclear Information System (INIS)

Lavela, P.; Tirado, J.L.

1999-01-01

Two-layered tantalum chalcogenides are evaluated as alkali metal intercalation hosts in lithium and sodium electrochemical cells. The metal-rich pseudo-two-dimensional solid Ta 2 Se shows a poor intercalation behaviour. Lithium reacts with the selenide by deintercalating selenium from the blocks of Ta-related b.c.c. structure leading to a collapse of the structure and the formation of tantalum metal. Sodium is reversibly intercalated to a limited extent leading to complex structural changes in the selenide, as revealed by electron diffraction. The two-dimensional telluride Ta 2 Te 3 allows a topotactic intercalation of lithium below 1 F/mol, while a more extended reaction leads to sample amorphization. The better intercalation behaviour of this solid can be related with the one-atom thick metal layer and the van der Waals gap separating tellurium atoms of successive layers. Sodium can be reversibly intercalated into Ta 2 Te 3 in sodium cells which show a good cycling behaviour. Exposure of the intercalated solid to water vapour allows the preparation of hydrated products with a monolayer or a bilayer of water molecules solvating sodium in the interlayer space. (orig.)

The effect of N-acetyl cysteine (NAC) on aluminum phosphide poisoning inducing cardiovascular toxicity: a case-control study.

Science.gov (United States)

Taghaddosinejad, Fakhreddin; Farzaneh, Esmaeil; Ghazanfari-Nasrabad, Mahdi; Eizadi-Mood, Nastaran; Hajihosseini, Morteza; Mehrpour, Omid

2016-01-01

Aluminum phosphide (AlP) is a very effective indoor and outdoor pesticide. We investigated the effects of N-acetyl cysteine (NAC) on the survival time, hemodynamics, and cardiac biochemical parameters at various time intervals in some cases of AlP poisoning. This research was a case-control study to evaluate 63 AlP poisoned patients during 2010-2012. Patients with cardiovascular complications of AlP to be treated with intravenous NAC plus conventional treatment were considered as the case group and compared with patients who did not receive NAC. NAC infusion was administered to the case group at 300 mg/kg for 20 h. The data gathered included age, sex, heart rate, Systolic blood pressure (SBP), creatine phosphokinase (CPK), creatine kinase MB (CK-MB), and ECG at the admission time and 12, 18, and 24 h after admission. Analysis of repeated measures was performed to check the variability of parameters over time. The mean ages in the case and control groups were 26.65 ± 1.06 (19-37 years) and 28.39 ± 1.11 (18-37 years), respectively (P = 0.266). Most of the patients were female (56.5%). CK-MB means were significantly different between the two groups, but no differences between the other variables were observed. Also, CK-MB, CPK, heart rate, and systolic blood pressure means became significantly different over time (0, 12, 18, and 24 h) in both groups (P managed by the positive role of NAC as the biochemical index of cardiotoxicity was found to elevate in both the case and control groups. Therefore, for the management protocol optimization, NAC evaluation should be done in further cases.

Optical properties change in laser-induced Te/As{sub 2}Se{sub 3} chalcogenide thin films

Energy Technology Data Exchange (ETDEWEB)

Behera, Mukta; Naik, Ramakanta [Utkal University, Department of Physics, Bhubaneswar (India)

2016-10-15

In the present work, we report the change in optical parameters due to the deposition and photo-induced diffusion of Te layer into the chalcogenide As{sub 2}Se{sub 3} film. The photo-diffusion creates a solid solution of As-Se-Te which has potential application in optical devices. The Te/As{sub 2}Se{sub 3} bilayer films prepared by thermal evaporation technique were studied by various experimental techniques. The photo-diffusion of Te into As{sub 2}Se{sub 3} matrix was done by 532-nm laser irradiation. The structure of the As{sub 2}Se{sub 3}, as-prepared and irradiated Te/As{sub 2}Se{sub 3} films was studied by X-ray diffraction which were amorphous in nature. The presence of all the elements was checked by energy-dispersive X-ray analysis, and the optical transmission spectra were recorded by Fourier transform infrared spectrometer. The optical band gap is reduced by the deposition and diffusion of Te into As{sub 2}Se{sub 3} film which is due to the increase in density of defect states in the gap region. The transmission is decreased, whereas the absorption efficiency is increased with the increase in disorderness. The X-ray photoelectron spectroscopy carried out on these films gives information about the bonding change due to the photo-diffusion process. Therefore, this is an important result which will open up new directions for the application of this material in semiconducting devices. (orig.)

Molecular Nickel Phosphide Carbonyl Nanoclusters: Synthesis, Structure, and Electrochemistry of [Ni11P(CO)18]3- and [H6-nNi31P4(CO)39]n- (n = 4 and 5).

Science.gov (United States)

Capacci, Chiara; Ciabatti, Iacopo; Femoni, Cristina; Iapalucci, Maria Carmela; Funaioli, Tiziana; Zacchini, Stefano; Zanotti, Valerio

2018-02-05

The reaction of [NEt 4 ] 2 [Ni 6 (CO) 12 ] in thf with 0.5 equiv of PCl 3 affords the monophosphide [Ni 11 P(CO) 18 ] 3- that in turn further reacts with PCl 3 resulting in the tetra-phosphide carbonyl cluster [HNi 31 P 4 (CO) 39 ] 5- . Alternatively, the latter can be obtained from the reaction of [NEt 4 ] 2 [Ni 6 (CO) 12 ] in thf with 0.8-0.9 equiv of PCl 3 . The [HNi 31 P 4 (CO) 39 ] 5- penta-anion is reversibly protonated by strong acids leading to the [H 2 Ni 31 P 4 (CO) 39 ] 4- tetra-anion, whereas deprotonation affords the [Ni 31 P 4 (CO) 39 ] 6- hexa-anion. The latter is reduced with Na/naphthalene yielding the [Ni 31 P 4 (CO) 39 ] 7- hepta-anion. In order to shed light on the polyhydride nature and redox behavior of these clusters, electrochemical and spectroelectrochemical studies were carried out on [Ni 11 P(CO) 18 ] 3- , [HNi 31 P 4 (CO) 39 ] 5- , and [H 2 Ni 31 P 4 (CO) 39 ] 4- . The reversible formation of the stable [Ni 11 P(CO) 18 ] 4- tetra-anion is demonstrated through the spectroelectrochemical investigation of [Ni 11 P(CO) 18 ] 3- . The redox changes of [HNi 31 P 4 (CO) 39 ] 5- show features of chemical reversibility and the vibrational spectra in the ν CO region of the nine redox states of the cluster [HNi 31 P 4 (CO) 39 ] n- (n = 3-11) are reported. The spectroelectrochemical investigation of [H 2 Ni 31 P 4 (CO) 39 ] 4- revealed the presence of three chemically reversible reduction processes, and the IR spectra of [H 2 Ni 31 P 4 (CO) 39 ] n- (n = 4-7) have been recorded. The different spectroelectrochemical behavior of [HNi 31 P 4 (CO) 39 ] 5- and [H 2 Ni 31 P 4 (CO) 39 ] 4- support their formulations as polyhydrides. Unfortunately, all the attempts to directly confirm their poly hydrido nature by 1 H NMR spectroscopy failed, as previously found for related large metal carbonyl clusters. Thus, the presence and number of hydride ligands have been based on the observed protonation/deprotonation reactions and the spectroelectrochemical

Electrical properties and transport mechanisms in phase change memory thin films of quasi-binary-line GeTe–Sb{sub 2}Te{sub 3} chalcogenide semiconductors

Energy Technology Data Exchange (ETDEWEB)

Sherchenkov, A. A. [National Research University of Electronic Technology (Russian Federation); Kozyukhin, S. A., E-mail: sergkoz@igic.ras.ru [Russian Academy of Sciences, Kurnakov Institute of General and Inorganic Chemistry (Russian Federation); Lazarenko, P. I.; Babich, A. V. [National Research University of Electronic Technology (Russian Federation); Bogoslovskiy, N. A. [Russian Academy of Sciences, Ioffe Physical–Technical Institute (Russian Federation); Sagunova, I. V.; Redichev, E. N. [National Research University of Electronic Technology (Russian Federation)

2017-02-15

The temperature dependences of the resistivity and current–voltage (I–V) characteristics of phase change memory thin films based on quasi-binary-line GeTe–Sb{sub 2}Te{sub 3} chalcogenide semiconductors Ge{sub 2}Sb{sub 2}Te{sub 5}, GeSb{sub 2}Te{sub 5}, and GeSb{sub 4}Te{sub 7} are investigated. The effect of composition variation along the quasibinary line on the electrical properties and transport mechanisms of the thin films is studied. The existence of three ranges with different I–V characteristics is established. The position and concentration of energy levels controlling carrier transport are estimated. The results obtained show that the electrical properties of the thin films can significantly change during a shift along the quasi-binary line GeTe–Sb{sub 2}Te{sub 3}, which is important for targeted optimization of the phase change memory technology.

Electrostatically driven resonance energy transfer in ?cationic? biocompatible indium phosphide quantum dots? ?Electronic supplementary information (ESI) available: Detailed experimental methods, the synthesis and characterization of QDs, bioimaging, stability studies, control experiments, and the calculation of various parameters involved in the resonance energy transfer process etc. See DOI: 10.1039/c7sc00592j Click here for additional data file.

OpenAIRE

Devatha, Gayathri; Roy, Soumendu; Rao, Anish; Mallick, Abhik; Basu, Sudipta; Pillai, Pramod P.

2017-01-01

Indium Phosphide Quantum Dots (InP QDs) have emerged as an alternative to toxic metal ion based QDs in nanobiotechnology. The ability to generate cationic surface charge, without compromising stability and biocompatibility, is essential in realizing the full potential of InP QDs in biological applications. We have addressed this challenge by developing a place exchange protocol for the preparation of cationic InP/ZnS QDs. The quaternary ammonium group provides the much required permanent posi...

Enhancing the water oxidation activity of Ni2P nanocatalysts by iron-doping and electrochemical activation

International Nuclear Information System (INIS)

Liu, Guang; He, Dongying; Yao, Rui; Zhao, Yong; Li, Jinping

2017-01-01

Highlights: •A sol-gel method for synthesis of Fe-doping Ni 2 P nanocatalysts was present. •Fe-doping Ni 2 P sample exhibited high OER activity after electrochemical activation. •In situ formed Fe-NiOOH layer on activated Fe-Ni 2 P provided more active OER sites. -- Abstract: In this work, we reported a facile and safe route for synthesis of Ni 2 P nanocatalysts by sol-gel method and demonstrated that the oxygen evolution reaction (OER) activity of Ni 2 P nanocatalysts can be dramatically enhanced by iron-doping and electrochemical activation. Compared with the fresh Fe-doped Ni 2 P nanocatalysts, a stable Fe-NiOOH layer was formed on the surface of Fe-doped Ni 2 P nanoparticles by electrochemical activation, thus promoting the charge transfer ability and surface electrochemically active sites generation for the electrochemical activated Fe-doped Ni 2 P nanocatalysts, ultimately accounting for the improvement of water oxidation activity, which was evidenced by cyclic voltammograms (CV), electrochemical impedance spectroscopy (EIS), X-ray photoelectron spectra (XPS) as well as high-resolution transmission electron microscopy (HR-TEM) measurements. For water oxidation reaction in 1 M KOH solution, the electrochemical activated Fe-doped Ni 2 P nanocatalysts can attain 10 mA/cm 2 at an overpotential of 292 mV with Tafel slope of 50 mV/dec, which was also much better than that of individual Ni 2 P, Fe 2 P nanocatalysts as well as commercial RuO 2 electrocatalyst. Moreover, long-term stability performance by chronoamperometric and chronopotentiometric tests for the activated Fe-doped Ni 2 P nanocatalysts exhibited no obvious decline within 56 h. It was demonstrated that modulating the OER catalytic activity for metal phosphide by iron-doping and electrochemical activation may provide new opportunities and avenues to engineer high performance electrocatalysts for water splitting.

Yellow phosphorus-induced Brugada phenocopy.

Science.gov (United States)

Dharanipradab, Mayakrishnan; Viswanathan, Stalin; Kumar, Gokula Raman; Krishnamurthy, Vijayalatchumy; Stanley, Daphene Divya

Metallic phosphides (of aluminum and phosphide) and yellow phosphorus are commonly used rodenticide compounds in developing countries. Toxicity of yellow phosphorus mostly pertains to the liver, kidney, heart, pancreas and the brain. Cardiotoxicity with associated Brugada ECG pattern has been reported only in poisoning with metallic phosphides. Brugada phenocopy and hepatic dysfunction were observed in a 29-year-old male following yellow phosphorus consumption. He had both type 1 (day1) and type 2 (day2) Brugada patterns in the electrocardiogram, which resolved spontaneously by the third day without hemodynamic compromise. Toxins such as aluminum and zinc phosphide have been reported to induce Brugada ECG patterns due to the generation of phosphine. We report the first case of yellow phosphorus-related Brugada phenocopy, without hemodynamic compromise or malignant arrhythmia. Copyright © 2017 Elsevier Inc. All rights reserved.

Criteria for Selection of Graded Index Filter Materials Based on an Analysis of Wave Propagation in a Periodic Medium.

Science.gov (United States)

1986-01-01

at 579.1 nm. These materials have high dispersion. 96 TABLE 14 OXIDES IN TELLEJRITE GLASSES .- Add it ive n TeO 2 -BaO TeO2 Wo 3 %*- La 2O 3 1.63...13 PbDeO3 and PbSiO 3 96 14 Oxides in Tellurite Glasses 97 15 Wurtzite Structure 98 16 Rocksalt Structure Chalcogenides 99 17 Zincblende or Sphalerite...alumina in glasses , SiO 2, was reported by Zuther, et al. who studied the glass system Ga 203-GeO 2-’v1 O5.56 The refractive indices of the monoclinic

Integrating 3D Flower-Like Hierarchical Cu2NiSnS4 with Reduced Graphene Oxide as Advanced Anode Materials for Na-Ion Batteries.

Science.gov (United States)

Yuan, Shuang; Wang, Sai; Li, Lin; Zhu, Yun-hai; Zhang, Xin-bo; Yan, Jun-min

2016-04-13

Development of an anode material with high performance and low cost is crucial for implementation of next-generation Na-ion batteries (NIBs) electrode, which is proposed to meet the challenges of large scale renewable energy storage. Metal chalcogenides are considered as promising anode materials for NIBs due to their high theoretical capacity, low cost, and abundant sources. Unfortunately, their practical application in NIBs is still hindered because of low conductivity and morphological collapse caused by their volume expansion and shrinkage during Na(+) intercalation/deintercalation. To solve the daunting challenges, herein, we fabricated novel three-dimensional (3D) Cu2NiSnS4 nanoflowers (CNTSNs) as a proof-of-concept experiment using a facile and low-cost method. Furthermore, homogeneous integration with reduced graphene oxide nanosheets (RGNs) endows intrinsically insulated CNTSNs with superior electrochemical performances, including high specific capacity (up to 837 mAh g(-1)), good rate capability, and long cycling stability, which could be attributed to the unique 3D hierarchical structure providing fast ion diffusion pathway and high contact area at the electrode/electrolyte interface.

Fast sono assisted ferrofluid mediated silver super - Adsorption over magnesium ferrite-copper sulfide chalcogenide with the aid of multivariate optimization.

Science.gov (United States)

Rezaei, Ali Asghar; Hossein Beyki, Mostafa; Shemirani, Farzaneh

2017-07-01

This research focuses on the development of a fast ultrasonic assisted ferrofluid mediated methodology to obtain the optimum conditions for silver adsorption from aqueous solutions. For this purpose magnesium ferrite-copper sulfide chalcogenide was synthesized and employed as an efficient nanosorbent. The sorbent was characterized with energy-dispersive X-ray spectroscopy (EDX), field emission scanning electron microscopy (FE-SEM), X-ray powder diffraction (XRD) and vibrational sample magnetometry (VSM) techniques. For obtaining the optimal operating conditions of silver adsorption, response surface methodology (RSM) was used. Tests were performed by Box-Behnken design (BBD). The value of optimum conditions for silver adsorption include pH=2.5, adsorbent dosage=10.0mg, sonicating time=1min and ionic strength=2.2%. According optimum conditions, percentage of removal should be 99.34%. With replication of similar experiment (n=6) average percentage of 100±0.95% was obtained for Ag + adsorption which shows good agreement between predicted and experimental results. Silver ion adsorption follow Langmuir model with maximum sorption capacity of 2113mgg -1 . Ultrasonic power helped to prepare ferrofluid and demonstrated that had an important role in better dispersing of it in solution and efficient adsorption of analyte. Copyright © 2017 Elsevier B.V. All rights reserved.

External temperature and pressure effects on thermodynamic properties and mechanical stability of yttrium chalcogenides YX (X=S, Se and Te)

Energy Technology Data Exchange (ETDEWEB)

Seddik, T. [Laboratoire de Physique Quantique et de Modélisation Mathématique, Université de Mascara, 29000 Mascara (Algeria); Khenata, R., E-mail: khenata_rabah@yahoo.fr [Laboratoire de Physique Quantique et de Modélisation Mathématique, Université de Mascara, 29000 Mascara (Algeria); Bouhemadou, A.; Guechi, N. [Laboratory for Developing New Materials and their Characterization, Department of Physics, Faculty of Science, University of Setif, 19000 Setif (Algeria); Sayede, A. [Université Lille Nord de France, F-59000 Lille (France); Université-Artois, UCCS, F-62300 Lens (France); CNRS, UMR 8181, F-59650 Villeneuve d’Ascq (France); Varshney, D. [Materials Science Laboratory, School of Physics, Vigyan Bhavan, Devi Ahilya University, Khandwa Road Campus, Indore 452001, Madhya Pradesh (India); Al-Douri, Y. [Institute of Nono Electronic Engineering, University Malaysia Perlis, 01000 Kangar, Perlis (Malaysia); Reshak, A.H. [Institute of Complex Systems, FFPW, CENAKVA, University of South Bohemia in CB, Nove Hrady 37333 (Czech Republic); Center of Excellence Geopolymer and Green Technology, School of Material Engineering, University Malaysia Perlis, 01007 Kangar, Perlis (Malaysia); Bin-Omran, S. [Department of Physics and Astronomy, Faculty of Science, King Saud University, PO Box 2455, Riyadh 11451 (Saudi Arabia)

2013-11-01

The full potential linearized augmented plane wave method within the framework of density functional theory is employed to investigate the structural, thermodynamic and elastic properties of the yttrium chalcogenides (YX: X=S, Se, and Te) in their low-pressure phase (Fm3{sup ¯}m) and high-pressure phase (Pm3{sup ¯}m). The exchange-correlation potential is treated with the generalized gradient approximation of Perdew–Burke–Ernzerhof (GGA-PBE). Temperature dependence of the volume and both adiabatic and isothermal bulk moduli is predicted for a temperature range from 0to1200K for the both phases of the herein considered materials. Furthermore, we have analyzed the thermodynamic properties such as the heat capacities, C{sub V} and C{sub P}, thermal expansion, α, and Debye temperature, Θ{sub D,} under variable pressure and temperature. We have calculated the isothermal elastic constants C{sub ij}{sup T} of the YX monochalcogenides in both NaCl-B1 and CsCl-B2 phases at zero pressure and a temperature range 0−1200K. The results show that rare earth yttrium monochalcogenides are mechanically stable at high temperature. The elastic anisotropy of all studied materials in the two phases has been studied using three different methods.

Highly efficient and stable MoP-RGO nanoparticles as electrocatalysts for hydrogen evolution

International Nuclear Information System (INIS)

Wu, Zexing; Wang, Jie; Zhu, Jing; Guo, Junpo; Xiao, Weiping; Xuan, Cuijuan; Lei, Wen; Wang, Deli

2017-01-01

Graphical abstract: Graphene supported MoP (MoP-RGO) was synthesized through a facile solvothermal reaction followed by high-temperature phosphating treatment method. The material exhibits an outstanding HER performance in both acid and alkaline media. RGO act as a substrate which can not only avoid the nanoparticles aggregation, but also facilitate the electron transfer during the electrocatalytic process. - Abstract: Electrochemical splitting of water to obtain hydrogen plays a vital role in high energy density devices, especially for fuel cells. In this work, reduced graphene oxide supported molybdenum phosphide nanoparticles (MoP-RGO) were prepared via a facile solvothermal reaction followed by high-temperature phosphating treatment. The electrochemical measurement results indicate that the MoP-RGO nanocomposite obtained at 900 °C exhibits excellent electrocatalytic activity for hydrogen evolution reaction (HER) with overpotentials of 117 mV and 150 mV at a current density of 10 mA cm"−"2 in acid and alkaline media, respectively. Furthermore, the instability of the catalyst in basic medium was systemically investigated. This work provides a facile strategy for the synthesis of cost-effective carbon supported metal phosphide as HER electrocatalyst.

All-optical tuning of EIT-like dielectric metasurfaces by means of chalcogenide phase change materials.

Science.gov (United States)

Petronijevic, E; Sibilia, C

2016-12-26

Electromagnetically induced transparency (EIT) is a pump-induced narrowband transparency window within an absorption line of the probe beam spectrum in an atomic system. In this paper we propose a way to bring together the all-dielectric metamaterials to have EIT-like effects and to optically tune the response by hybridizing them with a layer of a phase change material. We propose a design of the metamaterial based on Si nanoresonators that can support an EIT-like resonant response. On the top of the resonators we consider a thin layer of a chalcogenide phase change material, which we will use to tune the optical response. Our choice is Ge2Sb2Te5 (GST), since it has two stable phases at room temperature, namely amorphous and crystalline, between which it can be switched quickly, nonvolatively and reversibly, sustaining a large number of switching cycles. They differ in optical properties, while still having moderately low losses in telecom range. Since such dielectric resonators do not have non-radiative losses of metals around 1550nm, they can lead to a high-Q factor of the EIT-like response in this range. Firstly, we optimize the starting structure so that it gives an EIT-like response at 1550 nm when the GST layer is in the amorphous state. Our starting design uses glass as a substrate, but we also consider implementation in SOI technology. If we then switch the thin layer of GST to its crystalline phase, which has higher losses, the EIT-like response is red shifted, providing around 10:1 contrast at 1550nm. This reversible tuning can be done with an ns visible pulsed laser. We discuss the results of the simulation of the dielectric metasurface for different configurations and the tuning possibility.

Linking rigidity transitions with enthalpic changes at the glass transition and fragility: insight from a simple oscillator model.

Science.gov (United States)

Micoulaut, Matthieu

2010-07-21

A low temperature Monte Carlo dynamics of a Keating-like oscillator model is used to study the relationship between the nature of network glasses from the viewpoint of rigidity, the thermal reversibility during the glass transition and the strong-fragile behaviour of glass-forming liquids. The model shows that a Phillips optimal glass formation with minimal enthalpic changes is obtained under a cooling/annealing cycle when the system is optimally constrained by the harmonic interactions, i.e. when it is isostatically rigid. For these peculiar systems with a nearly reversible glass transition, the computed activation energy for relaxation time shows also a minimum, which demonstrates that isostatically rigid glasses are strong (Arrhenius-like) glass-forming liquids. Experiments on chalcogenide and oxide glass-forming liquids are discussed under this new perspective and confirm the theoretical prediction for chalcogenide network glasses whereas limitations of the approach appear for weakly interacting (non-covalent, ionic) systems.

Ultra-compact plasmonic waveguide modulators

DEFF Research Database (Denmark)

Babicheva, Viktoriia

of developing new material platforms for integrated plasmonic devices. Furthermore, novel plasmonic materials such as transparent conductive oxides and transition metal nitrides can offer a variety of new opportunities. In particular, they offer adjustable/tailorable and nonlinear optical properties, dynamic...... modulators based on ultra-compact waveguides with different active cores. Plasmonic modulators with the active core such as indium phosphides or ferroelectrics sandwiched between metal plates have promising characteristics. Apart from the speed and dimensions advantages, the metal plates can serve...... as electrodes for electrical pumping of the active material making it easier to integrate. Including an additional layer in the plasmonic waveguide, in particular an ultrathin transparent conductive oxide film, allows the control of the dispersive properties of the waveguide and thus the higher efficiency...

Optimization of Phase Change Memory with Thin Metal Inserted Layer on Material Properties

Science.gov (United States)

Harnsoongnoen, Sanchai; Sa-Ngiamsak, Chiranut; Siritaratiwat, Apirat

This works reports, for the first time, the thorough study and optimisation of Phase Change Memory (PCM) structure with thin metal inserted chalcogenide via electrical resistivity (ρ) using finite element modeling. PCM is one of the best candidates for next generation non-volatile memory. It has received much attention recently due to its fast write speed, non-destructive readout, superb scalability, and great compatibility with current silicon-based mass fabrication. The setback of PCM is a high reset current typically higher than 1mA based on 180nm lithography. To reduce the reset current and to solve the over-programming failure, PCM with thin metal inserted chalcogenide (bottom chalcogenide/metal inserted/top chalcogenide) structure has been proposed. Nevertheless, reports on optimisation of the electrical resistivity using the finite element method for this new PCM structure have never been published. This work aims to minimize the reset current of this PCM structure by optimizing the level of the electrical resistivity of the PCM profile using the finite element approach. This work clearly shows that PCM characteristics are strongly affected by the electrical resistivity. The 2-D simulation results reveal clearly that the best thermal transfer of and self-joule-heating at the bottom chalcogenide layer can be achieved under conditions; ρ_bottom chalcogenide > ρ_metal inserted > ρ_top chalcogenide More specifically, the optimized electrical resistivity of PCMTMI is attained with ρ_top chalcogenide: ρ_metal inserted: ρ_bottom chalcogenide ratio of 1:6:16 when ρ_top chalcogenide is 10-3 Ωm. In conclusion, high energy efficiency can be obtained with the reset current as low as 0.3mA and with high speed operation of less than 30ns.

Microorganism mediated biosynthesis of metal chalcogenides; a powerful tool to transform toxic effluents into functional nanomaterials

Energy Technology Data Exchange (ETDEWEB)

Vena, M. Paula; Jobbágy, Matías; Bilmes, Sara A., E-mail: sarabil@qi.fcen.uba.ar

2016-09-15

Cadmium contained in soil and water can be taken up by certain crops and aquatic organisms and accumulate in the food-chain, thus removal of Cd from mining or industrial effluents – i.e. Ni-Cd batteries, electroplating, pigments, fertilizers – becomes mandatory for human health. In parallel, there is an increased interest in the production of luminescent Q-dots for applications in bioimaging, sensors and electronic devices, even the present synthesis methods are economic and environmentally costly. An alternative green pathway for producing Metal chalcogenides (MC: CdS, CdSe, CdTe) nanocrystals is based on the metabolic activity of living organisms. Intracellular and extracellular biosynthesis of can be achieved within a biomimetic approach feeding living organisms with Cd precursors providing new routes for combining bioremediation with green routes for producing MC nanoparticles. In this mini-review we present the state-of-the-art of biosynthesis of MC nanoparticles with a critical discussion of parameters involved and protocols. Few existing examples of scaling-up are also discussed. A modular reactor based on microorganisms entrapped in biocompatible mineral matrices – already proven for bioremediation of dissolved dyes – is proposed for combining both Cd-depletion and MC nanoparticle's production. - Highlights: • Removal of heavy metals by living matter is feasible trough biosorption and bioaccumulation • Algae, fungi, bacteria and yeasts can synthesize CdS, CdSe and CdTe Q-dots • Encapsulation of microorganisms in mineral gels provides building blocks for reactor design. • Depletion of Cd with production of Q-dots can be achieved with modular bioreactors with entrapped cells.

Role of boundary layer diffusion in vapor deposition growth of chalcogenide nanosheets: the case of GeS.

Science.gov (United States)

Li, Chun; Huang, Liang; Snigdha, Gayatri Pongur; Yu, Yifei; Cao, Linyou

2012-10-23

We report a synthesis of single-crystalline two-dimensional GeS nanosheets using vapor deposition processes and show that the growth behavior of the nanosheet is substantially different from those of other nanomaterials and thin films grown by vapor depositions. The nanosheet growth is subject to strong influences of the diffusion of source materials through the boundary layer of gas flows. This boundary layer diffusion is found to be the rate-determining step of the growth under typical experimental conditions, evidenced by a substantial dependence of the nanosheet's size on diffusion fluxes. We also find that high-quality GeS nanosheets can grow only in the diffusion-limited regime, as the crystalline quality substantially deteriorates when the rate-determining step is changed away from the boundary layer diffusion. We establish a simple model to analyze the diffusion dynamics in experiments. Our analysis uncovers an intuitive correlation of diffusion flux with the partial pressure of source materials, the flow rate of carrier gas, and the total pressure in the synthetic setup. The observed significant role of boundary layer diffusions in the growth is unique for nanosheets. It may be correlated with the high growth rate of GeS nanosheets, ~3-5 μm/min, which is 1 order of magnitude higher than other nanomaterials (such as nanowires) and thin films. This fundamental understanding of the effect of boundary layer diffusions may generally apply to other chalcogenide nanosheets that can grow rapidly. It can provide useful guidance for the development of general paradigms to control the synthesis of nanosheets.

77 FR 43595 - Product Cancellation Order for Certain Pesticide Registrations

Science.gov (United States)

2012-07-25

...- dimethylphenyl)-N- (methoxyacetyl)-, methyl ester. GA080011 Safari 20 SG Dinotefuran. Insecticide. ID060014 Prozap Zinc Zinc phosphide Phosphide Pellets. (Zn3P2). KY080024 Safari 20 SG Dinotefuran. Herbicide.... Copper hydroxide D- Alanine, N-(2,6- dimethylphenyl)-N- (methoxyacetyl)-, methyl ester. VA080009 Safari...

Low Temperature Reactions for the Preparation of Group 13-15 Materials from Organo-gallium(I) and -indium(I) Compounds

National Research Council Canada - National Science Library

Beachley, O

1997-01-01

...) at 175 deg C and of neopentylgallium(I) Ga(CH2CMe3)n with P4 at 350- 400 deg C and with NH3 at 460-480 deg C in sealed tubes provide routes to indium phosphide, gallium phosphide and hexagonal gallium nitride, respectively...

Metal ion displacements in noncentrosymmetric chalcogenides La{sub 3}Ga{sub 1.67}S{sub 7}, La{sub 3}Ag{sub 0.6}GaCh{sub 7} (Ch=S, Se), and La{sub 3}MGaSe{sub 7} (M=Zn, Cd)

Energy Technology Data Exchange (ETDEWEB)

Iyer, Abishek K. [Department of Chemistry, University of Alberta, Edmonton, Alberta, Canada T6G2G2 (Canada); Yin, Wenlong [Department of Chemistry, University of Alberta, Edmonton, Alberta, Canada T6G2G2 (Canada); Institute of Chemical Materials, China Academy of Engineering Physics, Mianyang 621900 (China); Rudyk, Brent W. [Department of Chemistry, University of Alberta, Edmonton, Alberta, Canada T6G2G2 (Canada); Lin, Xinsong [Department of Chemistry, University of Alberta, Edmonton, Alberta, Canada T6G2G2 (Canada); Centre for Oil Sands Sustainability, Northern Alberta Institute of Technology, Edmonton, Alberta, Canada T6N1E5 (Canada); Nilges, Tom [Department of Chemistry, Technical University of Munich, 85748 Garching b. München (Germany); Mar, Arthur, E-mail: arthur.mar@ualberta.ca [Department of Chemistry, University of Alberta, Edmonton, Alberta, Canada T6G2G2 (Canada)

2016-11-15

The quaternary Ga-containing chalcogenides La{sub 3}Ag{sub 0.6}GaS{sub 7}, La{sub 3}Ag{sub 0.6}GaSe{sub 7}, La{sub 3}ZnGaSe{sub 7}, and La{sub 3}CdGaSe{sub 7}, as well as the related ternary chalcogenide La{sub 3}Ga{sub 1.67}S{sub 7}, were prepared by reactions of the elements at 950 °C. They adopt noncentrosymmetric hexagonal structures (space group P6{sub 3}, Z=2) with cell parameters (a=10.2 Å, c=6.1 Å for the sulfides; a=10.6 Å, c=6.4 Å for the selenides) that are largely controlled by the geometrical requirements of one-dimensional stacks of Ga-centered tetrahedra separated by the La atoms. Among these compounds, which share the common formulation La{sub 3}M{sub 1–x}GaCh{sub 7} (M=Ga, Ag, Zn, Cd; Ch=S, Se), the M atoms occupy sites within a stacking of trigonal antiprisms formed by Ch atoms. The location of the M site varies between extremes with trigonal antiprismatic (CN6) and trigonal planar (CN3) geometry. Partial occupation of these sites and intermediate ones accounts for the considerable versatility of these structures and the occurrence of large metal displacement parameters. The site occupations can be understood in a simple way as being driven by the need to satisfy appropriate bond valence sums for both the M and Ch atoms. Band structure calculations rationalize the substoichiometry observed in the Ag-containing compounds (La{sub 3}Ag{sub 0.6}GaS{sub 7}, La{sub 3}Ag{sub 0.6}GaSe{sub 7}) as a response to overbonding. X-ray photoelectron spectroscopy supports the presence of monovalent Ag atoms in these compounds, which are not charge-balanced. - Graphical abstract: Partial occupation of metal atoms in multiple sites accounts for versatility in Ga-containing chalcogenides La{sub 3}M{sub 1–x}GaCh{sub 7} with noncentrosymmetric hexagonal structures. - Highlights: • La{sub 3}M{sub 1–x}GaCh{sub 7} (M =Ga, Ag, Zn, Cd; Ch =S, Se) adopt related hexagonal structures. • Large displacements of M atoms originate from partial occupation of multiple

Strained quantum well photovoltaic energy converter

Science.gov (United States)

Freundlich, Alexandre (Inventor); Renaud, Philippe (Inventor); Vilela, Mauro Francisco (Inventor); Bensaoula, Abdelhak (Inventor)

1998-01-01

An indium phosphide photovoltaic cell is provided where one or more quantum wells are introduced between the conventional p-conductivity and n-conductivity indium phosphide layer. The approach allows the cell to convert the light over a wider range of wavelengths than a conventional single junction cell and in particular convert efficiently transparency losses of the indium phosphide conventional cell. The approach hence may be used to increase the cell current output. A method of fabrication of photovoltaic devices is provided where ternary InAsP and InGaAs alloys are used as well material in the quantum well region and results in an increase of the cell current output.

Microstructure, texture evolution and magnetic properties of strip-casting non-oriented 6.5 wt.% Si electrical steel doped with cerium

Energy Technology Data Exchange (ETDEWEB)

Li, Hao-Ze, E-mail: lhzqq83@163.com; Liu, Hai-Tao; Liu, Zhen-Yu, E-mail: zyliu@mail.neu.edu.cn; Wang, Guo-Dong

2015-05-15

A 0.3 mm thick non-oriented 6.5 wt.% Si electrical steel sheet doped with cerium is produced by twin-roll strip casting, hot rolling, warm rolling and annealing. A detailed study of the cerium precipitates in the as-cast strip, microstructure and texture evolution at different processing stages is carried out by electron probe micro-analysis, optical microscopy, X-ray diffraction and electron backscattered diffraction analysis. Grain interior distributing precipitates identified as Ce-oxides, Ce-oxysulfides and Ce-phosphides, and boundary distributing Ce-oxides and Ce-phosphides are observed in the as-cast strip. The initial as-cast strip is characterized by a much finer solidification microstructure and dominated by obvious < 001 >//ND texture through the strip thickness. After hot and warm rolling, inhomogeneous microstructure containing large amounts of in-grain shear bands is characterized by mixed < 110 >//RD and < 111 >//ND textures. The texture of the annealed sheet with a relatively large average grain size is far more optimized by the domination of the beneficial cube, rotated cube, (001)< 120 > to (001)< 130 > and Goss texture components, and the elimination of the detrimental γ-fiber texture, leading to a superior magnetic induction and improved iron loss. - Highlights: • An Fe–6.5 wt.% Si as-cast strip doped with cerium was produced. • A thin warm rolled sheet with limited edge cracks was obtained. • Microstructure and texture evolution at each stage were investigated. • Strong λ-fiber and Goss recrystallization textures were formed. • The magnetic properties of the annealed sheet were significantly improved.

New chalcogenide glasses in the CdTe-AgI-As{sub 2}Te{sub 3} system

Energy Technology Data Exchange (ETDEWEB)

Kassem, M. [Univ. Picardie Jules Verne, F-80000 Amiens (France); Le Coq, D., E-mail: david.lecoq@univ-littoral.fr [Univ. Lille Nord de France, F-59000 Lille (France); ULCO, LPCA, EA 4493, F-59140 Dunkerque (France); Boidin, R.; Bychkov, E. [Univ. Lille Nord de France, F-59000 Lille (France); ULCO, LPCA, EA 4493, F-59140 Dunkerque (France)

2012-02-15

Highlights: Black-Right-Pointing-Pointer Determination of the glass-forming region in the pseudo-ternary CdTe-AgI-As{sub 2}Te{sub 3} system. Black-Right-Pointing-Pointer Characterization of macroscopic properties of the new CdTe-AgI-As{sub 2}Te{sub 3} glasses. Black-Right-Pointing-Pointer Characterization of the total conductivity of CdTe-AgI-As{sub 2}Te{sub 3} glasses. Black-Right-Pointing-Pointer Comparison between the selenide and telluride equivalent systems. -- Abstract: Chalcogenide glasses in the pseudo-ternary CdTe-AgI-As{sub 2}Te{sub 3} system were synthesized and the glass-forming range was determined. The maximum content of CdTe in this glass system was found to be equal to 15 mol.%. The macroscopic characterizations of samples have consisted in Differential Scanning Calorimetry, density, and X-ray diffraction measurements. The cadmium telluride addition does not generate any significant change in the glass transition temperature but the resistance of binary AgI-As{sub 2}Te{sub 3} glasses towards crystallisation is estimated to be decreasing on the base of {Delta}T = T{sub x} - T{sub g} parameter. The total electrical conductivity {sigma} was measured by complex impedance spectroscopy. First, the CdTe additions in the (AgI){sub 0.5}(As{sub 2}Te{sub 3}){sub 0.5} host glass, (CdTe){sub x}(AgI){sub 0.5-x/2}(As{sub 2}Te{sub 3}){sub 0.5-x/2} lead to a conductivity decrease at x {<=} 0.05. Then, the behaviour is reversed at 0.05 {<=} x {<=} 0.15. The obtained results are discussed by comparison with the equivalent selenide system.

Synthesis and magnetic structure of the layered manganese oxide selenide Sr{sub 2}MnO{sub 2}Ag{sub 1.5}Se{sub 2}

Energy Technology Data Exchange (ETDEWEB)

Blandy, Jack N. [Department of Chemistry, University of Oxford, Inorganic Chemistry Laboratory, South Parks Road, Oxford OX1 3QR (United Kingdom); Diamond Light Source Ltd., Harwell Science and Innovation Campus, Didcot OX11 0DE (United Kingdom); Boskovic, Jelena C. [Department of Chemistry, University of Oxford, Inorganic Chemistry Laboratory, South Parks Road, Oxford OX1 3QR (United Kingdom); Clarke, Simon J., E-mail: simon.clarke@chem.ox.ac.uk [Department of Chemistry, University of Oxford, Inorganic Chemistry Laboratory, South Parks Road, Oxford OX1 3QR (United Kingdom)

2017-01-15

The synthesis of a high-purity sample of the layered oxide selenide Sr{sub 2}MnO{sub 2}Ag{sub 1.5}Se{sub 2} is reported. At ambient temperature it crystallises in the space group I4/mmm with two formula units in the unit cell and lattice parameters a=4.08771(1) Å, c=19.13087(8) Å. The compound displays mixed-valent manganese in a formal oxidation state close to +2.5 and powder neutron diffraction measurements reveal that below the Néel temperature of 63(1) K this results in an antiferromagnetic structure which may be described as A-type, modelled in the magnetic space group P{sub I}4/mnc (128.410 in the Belov, Neronova and Smirnova (BNS) scheme) in which localised Mn moments of 3.99(2) μ{sub B} are arranged in ferromagnetic layers which are coupled antiferromagnetically. In contrast to the isostructural compound Sr{sub 2}MnO{sub 2}Cu{sub 1.5}S{sub 2}, Sr{sub 2}MnO{sub 2}Ag{sub 1.5}Se{sub 2} does not display long range ordering of coinage metal ions and vacancies, nor may significant amounts of the coinage metal readily be deintercalated using soft chemical methods. - Graphical abstract: Sr{sub 2}MnO{sub 2}Ag{sub 1.5}Se{sub 2} containing mixed valent Mn ions undergoes magnetic ordering with ferromagnetic coupling within MnO{sub 2} sheets and antiferromagnetic coupling between MnO{sub 2} sheets. - Highlights: • High purity sample of Sr{sub 2}MnO{sub 2}Ag{sub 1.5}Se{sub 2} obtained. • Magnetic structure determined. • Compared with related mixed-valent manganite oxide chalcogenides.