WorldWideScience

Sample records for oxides carbides nitrides

  1. Corrosion-electrochemical characteristics of oxide-carbide and oxide-nitride coatings formed by electrolytic plasma

    International Nuclear Information System (INIS)

    Tomashov, N.D.; Chukalovskaya, T.V.; Medova, I.L.; Duradzhi, V.N.; Plavnik, G.M.

    1990-01-01

    The composition, structure, microhardness and corrosion-electrochemical properties of oxide-carbide and oxide-nitride coatings on titanium in 5n H 2 SO 4 , 50 deg, produced by the method of chemical-heat treatment in electrolytic plasma, containing saturation components of nitrogen and carbon, were investigated. It is shown that the coatings produced have increased hardness, possess high corrosion resistance in sulfuric acid solution at increased temperature, as to their electrochemcial behaviour they are similar to titanium carbide and nitride respectively. It is shown that high corrosion resistance is ensured by electrochemical mechanism of the oxide-carbide and oxide-nitride coating protection

  2. A review of oxide, silicon nitride, and silicon carbide brazing

    International Nuclear Information System (INIS)

    Santella, M.L.; Moorhead, A.J.

    1987-01-01

    There is growing interest in using ceramics for structural applications, many of which require the fabrication of components with complicated shapes. Normal ceramic processing methods restrict the shapes into which these materials can be produced, but ceramic joining technology can be used to overcome many of these limitations, and also offers the possibility for improving the reliability of ceramic components. One method of joining ceramics is by brazing. The metallic alloys used for bonding must wet and adhere to the ceramic surfaces without excessive reaction. Alumina, partially stabilized zirconia, and silicon nitride have high ionic character to their chemical bonds and are difficult to wet. Alloys for brazing these materials must be formulated to overcome this problem. Silicon carbide, which has some metallic characteristics, reacts excessively with many alloys, and forms joints of low mechanical strength. The brazing characteristics of these three types of ceramics, and residual stresses in ceramic-to-metal joints are briefly discussed

  3. Metallographic preparation of sintered oxides, carbides and nitrides of uranium and plutonium

    International Nuclear Information System (INIS)

    Martin, A.; Arles, L.

    1967-12-01

    We describe the methods of polishing, attack and coloring used at the section of plutonium base ceramics studies. These methods have stood the test of experience on the uranium and plutonium carbides, nitrides and carbonitrides as well on the mixed uranium and plutonium oxides. These methods have been particularly adapted to fit to the low dense and sintered samples [fr

  4. Oxidation kinetics of CVD silicon carbide and silicon nitride

    Science.gov (United States)

    Fox, Dennis S.

    1992-01-01

    The long-term oxidation behavior of pure, monolithic CVD SiC and Si3N4 is studied, and the isothermal oxidation kinetics of these two materials are obtained for the case of 100 hrs at 1200-1500 C in flowing oxygen. Estimates are made of lifetimes at the various temperatures investigated. Parabolic rate constants for SiC are within an order of magnitude of shorter exposure time values reported in the literature. The resulting silica scales are in the form of cristobalite, with cracks visible after exposure. The oxidation protection afforded by silica for these materials is adequate for long service times under isothermal conditions in 1-atm dry oxygen.

  5. A review of the breeding potentials of carbide, nitride and oxide fueled LMFBRs and GCFRs

    International Nuclear Information System (INIS)

    Handa, Muneo

    1977-11-01

    The effects of design parameters in large variation on compound system doubling time of large advanced-fueled LMFBR are described on the base of recent U.S. results. The fuel element design by Combustion Engineering Inc. in step-by-step substitution of the initial oxide fuel subassemblies with carbide ones is explained. Breeding characteristics of the oxide-fueled LMFBR and its potential design modifications are expounded. The gas cooled fast breeder program in West Germany and in the United States are briefed. Definitions of the breeding ratio and doubling time in overall fuel cycle are given. (auth.)

  6. Preparation of aluminum nitride-silicon carbide nanocomposite powder by the nitridation of aluminum silicon carbide

    NARCIS (Netherlands)

    Itatani, K.; Tsukamoto, R.; Delsing, A.C.A.; Hintzen, H.T.J.M.; Okada, I.

    2002-01-01

    Aluminum nitride (AlN)-silicon carbide (SiC) nanocomposite powders were prepared by the nitridation of aluminum-silicon carbide (Al4SiC4) with the specific surface area of 15.5 m2·g-1. The powders nitrided at and above 1400°C for 3 h contained the 2H-phases which consisted of AlN-rich and SiC-rich

  7. Preparation and study of the nitrides and mixed carbide-nitrides of uranium and of plutonium

    International Nuclear Information System (INIS)

    Anselin, F.

    1966-06-01

    A detailed description is given of a simple method for preparing uranium and plutonium nitrides by the direct action of nitrogen under pressure at moderate temperatures (about 400 C) on the partially hydrogenated bulk metal. It is shown that there is complete miscibility between the UN and PuN phases. The variations in the reticular parameters of the samples as a function of temperature and in the presence of oxide have been used to detect and evaluate the solubility of oxygen in the different phases. A study has been made of the sintering of these nitrides as a function of the preparation conditions with or without sintering additives. A favorable but non-reproducible, effect has been found for traces of oxide. The best results were obtained for pure UN at 1600 C (96 per cent theoretical density) on condition that a well defined powder, was used. The criterion used is the integral width of the X-ray diffraction lines. The compounds UN and PuN are completely miscible with the corresponding carbides. This makes it possible to prepare carbide-nitrides of the general formula (U,Pu) (C,N) by solid-phase diffusion, at around 1400 C. The sintering of these carbide-nitrides is similar to that of the carbides if the nitrogen content is low; in particular, nickel is an efficient sintering agent. For high contents, the sintering is similar to that of pure nitrides. (author) [fr

  8. Hydrotreatment activities of supported molybdenum nitrides and carbides

    Energy Technology Data Exchange (ETDEWEB)

    Dolce, G.M.; Savage, P.E.; Thompson, L.T. [University of Michigan, Ann Arbor, MI (United States). Dept. of Chemical Engineering

    1997-05-01

    The growing need for alternative sources of transportation fuels encourages the development of new hydrotreatment catalysts. These catalysts must be active and more hydrogen efficient than the current commercial hydrotreatment catalysts. Molybdenum nitrides and carbides are attractive candidate materials possessing properties that are comparable or superior to those of commercial sulfide catalysts. This research investigated the catalytic properties of {gamma}-Al{sub 2}O{sub 3}-supported molybdenum nitrides and carbides. These catalysts were synthesized via temperature-programmed reaction of supported molybdenum oxides with ammonia or methane/hydrogen mixtures. Phase constituents and compositions were determined by X-ray diffraction, elemental analysis, and neutral activation analysis. Oxygen chemisorption was used to probe the surface properties of the catalysts. Specific activities of the molybdenum nitrides and carbides were competitive with those of a commercial sulfide catalyst for hydrodenitrogenation (HDN), hydrodesulfurization (HDS), and hydrodeoxygenation (HDO). For HDN and HDS, the catalytic activity on a molybdenum basis was a strong inverse function of the molybdenum loading. Product distributions of the HDN, HDO and HDS of a variety of heteroatom compounds indicated that several of the nitrides and carbides were more hydrogen efficient than the sulfide catalyst. 35 refs., 8 figs., 7 tabs.

  9. Pull-test adhesion measurements of diamondlike carbon films on silicon carbide, silicon nitride, aluminum oxide, and zirconium oxide

    International Nuclear Information System (INIS)

    Erck, R.A.; Nichols, F.A.; Dierks, J.F.

    1994-01-01

    Hydrogenated amorphous carbon or diamondlike carbon (DLC) films were formed by 400 eV methane (CH 4 ) ion bombardment of various smooth and rough ceramics, as well as ceramics coated with a layer of Si or Ti. Adhesion was measured by a bonded-pin method. Excellent adhesion was measured for smooth SiC and Si 3 N 4 , but adhesion of DLC to smooth Al 2 O 3 and ZrO 2 was negligible. The use of a Si bonding interlayer produced good adhesion to all the substrates, but a Ti layer was ineffective due to poor bonding between the DLC film and Ti. Bulk thermodynamic calculations are not directly applicable to bonding at the interface because the interface is two dimensional and the compositions of interfacial phases are generally not known. If the standard enthalpy ΔH degree for the reaction between CH 4 and the substrate material is calculated under the assumption that a carbide phase is produced, a relationship is seen between the reaction enthalpy and the relative adhesion. Large positive enthalpies are associated with poor adhesion; negative or small positive enthalpies are associated with good adhesion. This relation between enthalpy and adhesion was also observed for DLC deposited on Si. The lack of adhesion to the Ti was attributed to inadvertent formation of a surface oxide layer that rendered the enthalpy for the reaction with CH 4 positive

  10. Pull-test adhesion measurements of diamondlike carbon films on silicon carbide, silicon nitride, aluminum oxide, and zirconium oxide

    Energy Technology Data Exchange (ETDEWEB)

    Erck, R.A.; Nichols, F.A. [Argonne National Lab., IL (United States); Dierks, J.F. [North Dakota State Univ., Fargo, ND (United States)

    1993-10-01

    Hydrogenated amorphous carbon films or diamondlike carbon (DLC) films were formed by ion-beam deposition of 400 eV methane (CH{sub 4}) ions on several smooth and rough ceramics, as well as on ceramics coated with a layer of Si and Ti. Adhesion was measured by the pin-pull method. Excellent adhesion was measured for smooth SiC and Si{sub 3}N{sub 4}, but adhesion of DLC to Al{sub 2}O{sub 3} and ZrO{sub 2} was negligible. The use of a Si bonding interlayer produced good adhesion to all the substrates, but a Ti layer was ineffective because bonding between the DLC film and Ti was poor. The presence of surface roughness appeared to greatly increase the measured adhesion in all cases. Bulk thermodynamic calculations are not directly applicable to bonding at the interface. If the standard enthalpy of formation for reaction between CH{sub 4} and substrate is calculated assumpting a carbide or carbon phase is produced, a relation is seen between reaction enthalpy and relative adhesion. Large positive enthalpies are associated with poor adhesion; negative or small positive enthalpies are associated with good adhesion. This relation between enthalpy and adhesion was also observed for DLC deposited on Si. Lack of adhesion to Ti was attributed to inadvertent formation of a surface oxide layer that rendered the enthalpy for reaction with CH{sub 4} strongly positive and similar in magnitude to that for Al{sub 2}O{sub 3} and ZrO{sub 2}.

  11. Hardness of carbides, nitrides, and borides

    International Nuclear Information System (INIS)

    Schroeter, W.

    1981-01-01

    Intermetallic compounds of metals with non-metals such as C, N, and B show different hardness. Wagner's interaction parameter characterizes manner and extent of the interaction between the atoms of the substance dissolved and the additional elements in metallic mixed phases. An attempt has been made to correlate the hardness of carbides, nitrides, and borides (data taken from literature) with certain interaction parameters and associated thermodynamic quantities (ΔH, ΔG). For some metals of periods 4, 5, and 6 corresponding relations were found between microhardness, interaction parameters, heat of formation, and atomic number

  12. Colloidal characterization of ultrafine silicon carbide and silicon nitride powders

    Science.gov (United States)

    Whitman, Pamela K.; Feke, Donald L.

    1986-01-01

    The effects of various powder treatment strategies on the colloid chemistry of aqueous dispersions of silicon carbide and silicon nitride are examined using a surface titration methodology. Pretreatments are used to differentiate between the true surface chemistry of the powders and artifacts resulting from exposure history. Silicon nitride powders require more extensive pretreatment to reveal consistent surface chemistry than do silicon carbide powders. As measured by titration, the degree of proton adsorption from the suspending fluid by pretreated silicon nitride and silicon carbide powders can both be made similar to that of silica.

  13. Iron Carbides and Nitrides: Ancient Materials with Novel Prospects.

    Science.gov (United States)

    Ye, Zhantong; Zhang, Peng; Lei, Xiang; Wang, Xiaobai; Zhao, Nan; Yang, Hua

    2018-02-07

    Iron carbides and nitrides have aroused great interest in researchers, due to their excellent magnetic properties, good machinability and the particular catalytic activity. Based on these advantages, iron carbides and nitrides can be applied in various areas such as magnetic materials, biomedical, photo- and electrocatalysis. In contrast to their simple elemental composition, the synthesis of iron carbides and nitrides still has great challenges, particularly at the nanoscale, but it is usually beneficial to improve performance in corresponding applications. In this review, we introduce the investigations about iron carbides and nitrides, concerning their structure, synthesis strategy and various applications from magnetism to the catalysis. Furthermore, the future prospects are also discussed briefly. © 2018 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

  14. Platinum group metal nitrides and carbides: synthesis, properties and simulation

    International Nuclear Information System (INIS)

    Ivanovskii, Alexander L

    2009-01-01

    Experimental and theoretical data on new compounds, nitrides and carbides of the platinum group 4d and 5d metals (ruthenium, rhodium, palladium, osmium, iridium, platinum), published over the past five years are summarized. The extreme mechanical properties of platinoid nitrides and carbides, i.e., their high strength and low compressibility, are noted. The prospects of further studies and the scope of application of these compounds are discussed.

  15. Safety research needs for carbide and nitride fueled LMFBR's. Final report

    International Nuclear Information System (INIS)

    Kastenberg, W.E.

    1975-01-01

    The results of a study initiated at UCLA during the academic year 1974--1975 to evaluate and review the potential safety related research needs for carbide and nitride fueled LMFBR's are presented. The tasks included the following: (1) Review Core and primary system designs for any significant differences from oxide fueled reactors, (2) Review carbide (and nitride) fuel element irradiation behavior, (3) Review reactor behavior in postulated accidents, (4) Examine analytical methods of accident analysis to identify major gaps in models and data, and (5) Examine post accident heat removal. (TSS)

  16. Metal Immiscibility Route to Synthesis of Ultrathin Carbides, Borides, and Nitrides.

    Science.gov (United States)

    Wang, Zixing; Kochat, Vidya; Pandey, Prafull; Kashyap, Sanjay; Chattopadhyay, Soham; Samanta, Atanu; Sarkar, Suman; Manimunda, Praveena; Zhang, Xiang; Asif, Syed; Singh, Abhisek K; Chattopadhyay, Kamanio; Tiwary, Chandra Sekhar; Ajayan, Pulickel M

    2017-08-01

    Ultrathin ceramic coatings are of high interest as protective coatings from aviation to biomedical applications. Here, a generic approach of making scalable ultrathin transition metal-carbide/boride/nitride using immiscibility of two metals is demonstrated. Ultrathin tantalum carbide, nitride, and boride are grown using chemical vapor deposition by heating a tantalum-copper bilayer with corresponding precursor (C 2 H 2 , B powder, and NH 3 ). The ultrathin crystals are found on the copper surface (opposite of the metal-metal junction). A detailed microscopy analysis followed by density functional theory based calculation demonstrates the migration mechanism, where Ta atoms prefer to stay in clusters in the Cu matrix. These ultrathin materials have good interface attachment with Cu, improving the scratch resistance and oxidation resistance of Cu. This metal-metal immiscibility system can be extended to other metals to synthesize metal carbide, boride, and nitride coatings. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  17. Synthesis and characterization of group V metal carbide and nitride catalysts

    Science.gov (United States)

    Kwon, Heock-Hoi

    1998-11-01

    Group V transition metal carbides and nitrides were prepared via the temperature programmed reaction (TPR) of corresponding oxides with NHsb3 or a CHsb4/Hsb2 mixture. Except for the tantalum compounds, phase-pure carbides and nitrides were prepared. The vanadium carbides and nitrides were the most active and selective catalysts. Therefore the principal focus of the research was the preparation, characterization, and evaluation of high surface area vanadium nitride catalysts. A series of vanadium nitrides with surface areas up to 60 msp2/g was prepared. Thermal gravimetric analysis coupled with x-ray diffraction and scanning electron microscopy indicated that the solid-state reaction proceeded by the sequential reduction of Vsb2Osb5 to VOsb{0.9} and concluded with the topotactic substitution of nitrogen for oxygen in VOsb{0.9}. The transformation of Vsb2Osb5 to VN was pseudomorphic. An experimental design was executed to determine effects of the heating rates and space velocities on the VN microstructures. The heating rates had minor effects on the surface areas and pore size distributions; however, increasing the space velocity significantly increased the surface area. The materials were mostly mesoporous. Oxygen chemisorption on the vanadium nitrides scaled linearly with the surface area. The corresponding O/Vsbsurface ratio was ≈0.6. The vanadium nitrides were active for butane activation and pyridine hydrodenitrogenation. During butane activation, their selectivities towards dehydrogenation products were as high as 98%. The major product in pyridine hydrodenitrogenation was pentane. The reaction rates increased almost linearly with the surface area suggesting that these reactions were structure insensitive. The vanadium nitrides were not active for crotonaldehyde hydrogenation; however, they catalyzed an interesting ring formation reaction that produced methylbenzaldehyde and xylene from crotonaldehyde. A new method was demonstrated for the production of very

  18. Indentation fatigue in silicon nitride, alumina and silicon carbide ...

    Indian Academy of Sciences (India)

    Unknown

    carbide ceramics. A K MUKHOPADHYAY. Central Glass and Ceramic Research Institute, Kolkata 700 032, India. Abstract. Repeated indentation fatigue (RIF) experiments conducted on the same spot of different structural ceramics viz. a hot pressed silicon nitride (HPSN), sintered alumina of two different grain sizes viz.

  19. Indentation fatigue in silicon nitride, alumina and silicon carbide ...

    Indian Academy of Sciences (India)

    Repeated indentation fatigue (RIF) experiments conducted on the same spot of different structural ceramics viz. a hot pressed silicon nitride (HPSN), sintered alumina of two different grain sizes viz. 1 m and 25 m, and a sintered silicon carbide (SSiC) are reported. The RIF experiments were conducted using a Vicker's ...

  20. Colloidal characterization of silicon nitride and silicon carbide

    Science.gov (United States)

    Feke, Donald L.

    1986-01-01

    The colloidal behavior of aqueous ceramic slips strongly affects the forming and sintering behavior and the ultimate mechanical strength of the final ceramic product. The colloidal behavior of these materials, which is dominated by electrical interactions between the particles, is complex due to the strong interaction of the solids with the processing fluids. A surface titration methodology, modified to account for this interaction, was developed and used to provide fundamental insights into the interfacial chemistry of these systems. Various powder pretreatment strategies were explored to differentiate between true surface chemistry and artifacts due to exposure history. The colloidal behavior of both silicon nitride and carbide is dominated by silanol groups on the powder surfaces. However, the colloid chemistry of silicon nitride is apparently influenced by an additional amine group. With the proper powder treatments, silicon nitride and carbide powder can be made to appear colloidally equivalent. The impact of these results on processing control will be discussed.

  1. Additive-assisted synthesis of boride, carbide, and nitride micro/nanocrystals

    International Nuclear Information System (INIS)

    Chen, Bo; Yang, Lishan; Heng, Hua; Chen, Jingzhong; Zhang, Linfei; Xu, Liqiang; Qian, Yitai; Yang, Jian

    2012-01-01

    General and simple methods for the syntheses of borides, carbides and nitrides are highly desirable, since those materials have unique physical properties and promising applications. Here, a series of boride (TiB 2 , ZrB 2 , NbB 2 , CeB 6 , PrB 6 , SmB 6 , EuB 6 , LaB 6 ), carbide (SiC, TiC, NbC, WC) and nitride (TiN, BN, AlN, MgSiN 2 , VN) micro/nanocrystals were prepared from related oxides and amorphous boron/active carbon/NaN 3 with the assistance of metallic Na and elemental S. In-situ temperature monitoring showed that the reaction temperature could increase quickly to ∼850 °C, once the autoclave was heated to 100 °C. Such a rapid temperature increase was attributed to the intense exothermic reaction between Na and S, which assisted the formation of borides, carbides and nitrides. The as-obtained products were characterized by XRD, SEM, TEM, and HRTEM techniques. Results in this report will greatly benefit the future extension of this approach to other compounds. - Graphical abstract: An additive-assisted approach is successfully developed for the syntheses of borides, carbides and nitrides micro/nanocrystals with the assistance of the exothermic reaction between Na and S. Highlights: ► An additive-assisted synthesis strategy is developed for a number of borides, carbides and nitrides. ► The reaction mechanism is demonstrated by the case of SiC nanowires. ► The formation of SiC nanowires is initiated by the exothermic reaction of Na and S.

  2. Thermogravimetric analysis of silicon carbide-silicon nitride fibers at ambient to 1000 C in air

    Science.gov (United States)

    Daniels, J. G.; Ledbetter, F. E., III; Clemons, J. M.; Penn, B. G.

    1984-01-01

    Thermogravimetric analysis of silicon carbide-silicon nitride fibers was carried out at ambient to 1000 C in air. The weight loss over this temperature range was negligible. In addition, the oxidative stability at high temperature for a short period of time was determined. Fibers heated at 1000 C in air for fifteen minutes showed negligible weight loss (i.e., less than 1 percent).

  3. Valence electronic structure of tantalum carbide and nitride

    Institute of Scientific and Technical Information of China (English)

    FAN; ChangZeng

    2007-01-01

    The valence electronic structures of tantalum carbide (TaC) and tantalum nitride (TaN) are studied by using the empirical electronic theory (EET). The results reveal that the bonds of these compounds have covalent, metallic and ionic characters. For a quantitative analysis of the relative strength of these components, their ionicities have been calculated by implanting the results of EET to the PVL model. It has been found that the ionicity of tantalum carbide is smaller than that of tantalum nitride. The EET results also reveal that the covalent electronic number of the strongest bond in the former is larger than that of the latter. All these suggest that the covalent bond of TaC is stronger than that of TaN, which coincides to that deduced from the first-principles method.……

  4. Valence electronic structure of tantalum carbide and nitride

    Institute of Scientific and Technical Information of China (English)

    2007-01-01

    @@ The valence electronic structures of tantalum carbide (TaC) and tantalum nitride (TaN) are studied by using the empirical electronic theory (EET). The results reveal that the bonds of these compounds have covalent, metallic and ionic characters. For a quantitative analysis of the relative strength of these components, their ionicities have been calculated by implanting the results of EET to the PVL model. It has been found that the ionicity of tantalum carbide is smaller than that of tantalum nitride. The EET results also reveal that the covalent electronic number of the strongest bond in the former is larger than that of the latter. All these suggest that the covalent bond of TaC is stronger than that of TaN, which coincides to that deduced from the first-principles method.

  5. High temperature corrosion of silicon carbide and silicon nitride in the presence of chloride compound

    International Nuclear Information System (INIS)

    McNallan, M.

    1993-01-01

    Silicon carbide and silicon nitride are resistant to oxidation because a protective silicon dioxide films on their surfaces in most oxidizing environments. Chloride compounds can attack the surface in two ways: 1) chlorine can attack the silicon directly to form a volatile silicon chloride compound or 2) alkali compounds combined with the chlorine can be transported to the surface where they flux the silica layer by forming stable alkali silicates. Alkali halides have enough vapor pressure that a sufficient quantity of alkali species to cause accelerated corrosion can be transported to the ceramic surface without the formation of a chloride deposit. When silicon carbide is attacked simultaneously by chlorine and oxygen, the corrosion products include both volatile and condensed spices. Silicon nitride is much more resistance to this type of attack than silicon carbide. Silicon based ceramics are exposed to oxidizing gases in the presence of alkali chloride vapors, the rate of corrosion is controlled primarily by the driving force for the formation of alkali silicate, which can be quantified as the activity of the alkali oxide in equilibrium with the corrosive gas mixture. In a gas mixture containing a fixed partial pressure of KCl, the rate of corrosion is accelerated by increasing the concentration of water vapor and inhibited by increasing the concentration of HCl. Similar results have been obtained for mixtures containing other alkalis and halogens. (Orig./A.B.)

  6. Generation and Characteristics of IV-VI transition Metal Nitride and Carbide Nanoparticles using a Reactive Mesoporous Carbon Nitride

    KAUST Repository

    Alhajri, Nawal Saad

    2016-02-22

    Interstitial nitrides and carbides of early transition metals in groups IV–VI exhibit platinum-like electronic structures, which make them promising candidates to replace noble metals in various catalytic reactions. Herein, we present the preparation and characterization of nano-sized transition metal nitries and carbides of groups IV–VI (Ti, V, Nb, Ta, Cr, Mo, and W) using mesoporous graphitic carbon nitride (mpg-C3N4), which not only provides confined spaces for restricting primary particle size but also acts as a chemical source of nitrogen and carbon. We studied the reactivity of the metals with the template under N2 flow at 1023 K while keeping the weight ratio of metal to template constant at unity. The produced nanoparticles were characterized by powder X-ray diffraction, CHN elemental analysis, nitrogen sorption, X-ray photoelectron spectroscopy, and transmission electron microscopy. The results show that Ti, V, Nb, Ta, and Cr form nitride phases with face centered cubic structure, whereas Mo and W forme carbides with hexagonal structures. The tendency to form nitride or carbide obeys the free formation energy of the transition metal nitrides and carbides. This method offers the potential to prepare the desired size, shape and phase of transition metal nitrides and carbides that are suitable for a specific reaction, which is the chief objective of materials chemistry.

  7. Rf-plasma synthesis of nanosize silicon carbide and nitride. Final report

    Energy Technology Data Exchange (ETDEWEB)

    Buss, R.J.

    1997-02-01

    A pulsed rf plasma technique is capable of generating ceramic particles of 10 manometer dimension. Experiments using silane/ammonia and trimethylchlorosilane/hydrogen gas mixtures show that both silicon nitride and silicon carbide powders can be synthesized with control of the average particle diameter from 7 to 200 nm. Large size dispersion and much agglomeration appear characteristic of the method, in contrast to results reported by another research group. The as produced powders have a high hydrogen content and are air and moisture sensitive. Post-plasma treatment in a controlled atmosphere at elevated temperature (800{degrees}C) eliminates the hydrogen and stabilizes the powder with respect to oxidation or hydrolysis.

  8. Fabrication of carbide and nitride pellets and the nitride irradiations Niloc 1 and Niloc 2

    International Nuclear Information System (INIS)

    Blank, H.

    1991-01-01

    Besides the relatively well-known advanced LMFBR mixed carbide fuel an advanced mixed nitride is also an attractive candidate for the optimised fuel cycle of the European Fast Reactor, but the present knowledge about the nitride is still insufficient and should be raised to the level of the carbide. For such an optimised fuel cycle the following general conditions have been set up for the fuel: (i) the burnup of the optimised MN and MC should be at least 15 a/o or even beyond, at moderate linear ratings of less than 75 kW/m (ii) the fuel will be used in a He-bonding pin concept and (iii) as far as available an advanced economic pellet fabrication method should be employed. (iv) The fuel structure must contain 15 - 20% porosity in order to accomodate the fission product swelling at high burnup. This report gives a comprehensive description of fuel and pellet fabrication and characterization, irradiation, and post-irradiation examination. From the results important conclusions can be drawn about future work on nitrides

  9. Chapter 19: Catalysis by Metal Carbides and Nitrides

    Energy Technology Data Exchange (ETDEWEB)

    Schaidle, Joshua A [National Renewable Energy Laboratory (NREL), Golden, CO (United States); Nash, Connor P [National Renewable Energy Laboratory (NREL), Golden, CO (United States); Yung, Matthew M [National Renewable Energy Laboratory (NREL), Golden, CO (United States); Chen, Yuan [Pacific Northwest National Laboratory; Carl, Sarah [University of Michigan; Thompson, Levi [University of Michigan

    2017-08-09

    Early transition metal carbides and nitrides (ETMCNs), materials in which carbon or nitrogen occupies interstitial sites within a parent metal lattice, possess unique physical and chemical properties that motivate their use as catalysts. Specifically, these materials possess multiple types of catalytic sites, including metallic, acidic, and basic sites, and as such, exhibit reactivities that differ from their parent metals. Moreover, their surfaces are dynamic under reaction conditions. This chapter reviews recent (since 2010) experimental and computational investigations into the catalytic properties of ETMCN materials for applications including biomass conversion, syngas and CO2 upgrading, petroleum and natural gas refining, and electrocatalytic energy conversion, energy storage, and chemicals production, and attempts to link catalyst performance to active site identity/surface structure in order to elucidate the present level of understanding of structure-function relationships for these materials. The chapter concludes with a perspective on leveraging the unique properties of these materials to design and develop improved catalysts through a dedicated, multidisciplinary effort.

  10. New catalysts for coal processing: Metal carbides and nitrides

    Energy Technology Data Exchange (ETDEWEB)

    S. Ted Oyama; David F. Cox

    1999-12-03

    The subject of this research project was to investigate the catalytic properties of a new class of materials, transition metal carbides and nitrides, for treatment of coal liquid and petroleum feedstocks. The main objectives were: (1) preparation of catalysts in unsupported and supported form; (2) characterization of the materials; (3) evaluation of their catalytic properties in HDS and HDN; (4) measurement of the surface properties; and (5) observation of adsorbed species. All of the objectives were substantially carried out and the results will be described in detail below. The catalysts were transition metal carbides and nitrides spanning Groups 4--6 in the Periodic Table. They were chosen for study because initial work had shown they were promising materials for hydrotreating. The basic strategy was first to prepare the materials in unsupported form to identify the most promising catalyst, and then to synthesize a supported form of the material. Already work had been carried out on the synthesis of the Group VI compounds Mo{sub 2}C, Mo{sub 2}N, and WC, and new methods were developed for the Group V compounds VC and NbC. All the catalysts were then evaluated in a hydrotreating test at realistic conditions. It was found that the most active catalyst was Mo{sub 2}C, and further investigations of the material were carried out in supported form. A new technique was employed for the study of the bulk and surface properties of the catalysts, near edge x-ray absorption spectroscopy (NEXAFS), that fingerprinted the electronic structure of the materials. Finally, two new research direction were explored. Bimetallic alloys formed between two transition metals were prepared, resulting in catalysts having even higher activity than Mo{sub 2}C. The performance of the catalysts in hydrodechloration was also investigated.

  11. Thermogravimetric analysis of silicon carbide-silicon nitride polycarbosilazane precursor during pyrolysis from ambient to 1000 C

    Science.gov (United States)

    Ledbetter, F. E., III; Daniels, J. G.; Clemons, J. M.; Hundley, N. H.; Penn, B. G.

    1984-01-01

    Thermogravimetric analysis data are presented on the unmeltable polycarbosilazane precursor of silicon carbide-silicon nitride fibers, over the room temperature-1000 C range in a nitrogen atmosphere, in order to establish the weight loss at various temperatures during the precursor's pyrolysis to the fiber material. The fibers obtained by this method are excellent candidates for use in applications where the oxidation of carbon fibers (above 400 C) renders them unsuitable.

  12. Preparing microspheres of actinide nitrides from carbon containing oxide sols

    International Nuclear Information System (INIS)

    Triggiani, L.V.

    1975-01-01

    A process is given for preparing uranium nitride, uranium oxynitride, and uranium carboxynitride microspheres and the microspheres as compositions of matter. The microspheres are prepared from carbide sols by reduction and nitriding steps. (Official Gazette)

  13. Gelcasting of SiC/Si for preparation of silicon nitride bonded silicon carbide

    International Nuclear Information System (INIS)

    Xie, Z.P.; Tsinghua University, Beijing,; Cheng, Y.B.; Lu, J.W.; Huang, Y.

    2000-01-01

    In the present paper, gelcasting of aqueous slurry with coarse silicon carbide(1mm) and fine silicon particles was investigated to fabricate silicon nitride bonded silicon carbide materials. Through the examination of influence of different polyelectrolytes on the Zeta potential and viscosity of silicon and silicon carbide suspensions, a stable SiC/Si suspension with 60 vol% solid loading could be prepared by using polyelectrolyte of D3005 and sodium alginate. Gelation of this suspension can complete in 10-30 min at 60-80 deg C after cast into mold. After demolded, the wet green body can be dried directly in furnace and the green strength will develop during drying. Complex shape parts with near net size were prepared by the process. Effects of the debindering process on nitridation and density of silicon nitride bonded silicon carbide were also examined. Copyright (2000) The Australian Ceramic Society

  14. 2D metal carbides and nitrides (MXenes) for energy storage

    KAUST Repository

    Anasori, Babak; Lukatskaya, Maria R.; Gogotsi, Yury

    2017-01-01

    The family of 2D transition metal carbides, carbonitrides and nitrides (collectively referred to as MXenes) has expanded rapidly since the discovery of Ti3C2 in 2011. The materials reported so far always have surface terminations, such as hydroxyl, oxygen or fluorine, which impart hydrophilicity to their surfaces. About 20 different MXenes have been synthesized, and the structures and properties of dozens more have been theoretically predicted. The availability of solid solutions, the control of surface terminations and a recent discovery of multi-transition-metal layered MXenes offer the potential for synthesis of many new structures. The versatile chemistry of MXenes allows the tuning of properties for applications including energy storage, electromagnetic interference shielding, reinforcement for composites, water purification, gas- and biosensors, lubrication, and photo-, electro- and chemical catalysis. Attractive electronic, optical, plasmonic and thermoelectric properties have also been shown. In this Review, we present the synthesis, structure and properties of MXenes, as well as their energy storage and related applications, and an outlook for future research.

  15. 2D metal carbides and nitrides (MXenes) for energy storage

    KAUST Repository

    Anasori, Babak

    2017-01-17

    The family of 2D transition metal carbides, carbonitrides and nitrides (collectively referred to as MXenes) has expanded rapidly since the discovery of Ti3C2 in 2011. The materials reported so far always have surface terminations, such as hydroxyl, oxygen or fluorine, which impart hydrophilicity to their surfaces. About 20 different MXenes have been synthesized, and the structures and properties of dozens more have been theoretically predicted. The availability of solid solutions, the control of surface terminations and a recent discovery of multi-transition-metal layered MXenes offer the potential for synthesis of many new structures. The versatile chemistry of MXenes allows the tuning of properties for applications including energy storage, electromagnetic interference shielding, reinforcement for composites, water purification, gas- and biosensors, lubrication, and photo-, electro- and chemical catalysis. Attractive electronic, optical, plasmonic and thermoelectric properties have also been shown. In this Review, we present the synthesis, structure and properties of MXenes, as well as their energy storage and related applications, and an outlook for future research.

  16. The structure and function of supported molybdenum nitride and molybdenum carbide hydrotreating catalysts

    Science.gov (United States)

    Dolce, Gregory Martin

    1997-11-01

    A series of gamma-Alsb2Osb3 supported molybdenum nitrides and carbides were prepared by the temperature programmed reaction of supported molybdates with ammonia and methane/hydrogen mixtures, respectively. In the first part of this research, the effects of synthesis heating rates and molybdenum loading on the catalytic properties of the materials were examined. A significant amount of excess carbon was deposited on the surface of the carbides during synthesis. The materials consisted of small particles which were very highly dispersed. Oxygen chemisorption indicated that the nitride particles may have been two-dimensional. The dispersion of the carbides, however, appeared to decrease as the loading increased. The catalysts were evaluated for hydrodenitrogenation (HDN), hydrodesulfurization (HDS), and hydrodeoxygenation (HDO). The molybdenum loading had the largest effect on the activity of the materials. For the nitrides, the HDN and HDS activities were inverse functions of the loading. This suggested that the most active HDN and HDS sites were located at the perimeter of the two-dimensional particles. The HDN and HDS activities of the carbides followed the same trend as the oxygen uptake. This result suggested that oxygen titrated the active sites on the supported carbides. Selected catalysts were evaluated for methylcarbazole HDN, dibenzothiophene HDS, and dibenzofuran HDO. The activity and selectivity of the nitrides and carbides were competitive with a presulfided commercial catalyst. In the second part of this work, a series of supported nitrides and carbides were prepared using a wider range of loadings (5-30 wt% Mo). Thermogravimetric analysis was used to determine the temperature at which excess carbon was deposited on the carbides. By modifying the synthesis parameters, the deposition of excess carbon was effectively inhibited. The dispersions of the supported nitrides and carbides were constant and suggested that the materials consisted of two

  17. Analytical and Experimental Evaluation of Joining Silicon Carbide to Silicon Carbide and Silicon Nitride to Silicon Nitride for Advanced Heat Engine Applications Phase II

    Energy Technology Data Exchange (ETDEWEB)

    Sundberg, G.J.

    1994-01-01

    Techniques were developed to produce reliable silicon nitride to silicon nitride (NCX-5101) curved joins which were used to manufacture spin test specimens as a proof of concept to simulate parts such as a simple rotor. Specimens were machined from the curved joins to measure the following properties of the join interlayer: tensile strength, shear strength, 22 C flexure strength and 1370 C flexure strength. In parallel, extensive silicon nitride tensile creep evaluation of planar butt joins provided a sufficient data base to develop models with accurate predictive capability for different geometries. Analytical models applied satisfactorily to the silicon nitride joins were Norton's Law for creep strain, a modified Norton's Law internal variable model and the Monkman-Grant relationship for failure modeling. The Theta Projection method was less successful. Attempts were also made to develop planar butt joins of siliconized silicon carbide (NT230).

  18. Oxidation of boron carbide at high temperatures

    International Nuclear Information System (INIS)

    Steinbrueck, Martin

    2005-01-01

    The oxidation kinetics of various types of boron carbides (pellets, powder) were investigated in the temperature range between 1073 and 1873 K. Oxidation rates were measured in transient and isothermal tests by means of mass spectrometric gas analysis. Oxidation of boron carbide is controlled by the formation of superficial liquid boron oxide and its loss due to the reaction with surplus steam to volatile boric acids and/or direct evaporation at temperatures above 1770 K. The overall reaction kinetics is paralinear. Linear oxidation kinetics established soon after the initiation of oxidation under the test conditions described in this report. Oxidation is strongly influenced by the thermohydraulic boundary conditions and in particular by the steam partial pressure and flow rate. On the other hand, the microstructure of the B 4 C samples has a limited influence on oxidation. Very low amounts of methane were produced in these tests

  19. Synthesis of tantalum carbide and nitride nanoparticles using a reactive mesoporous template for electrochemical hydrogen evolution

    KAUST Repository

    Alhajri, Nawal Saad; Yoshida, Hiroshi; Anjum, Dalaver H.; Garcia Esparza, Angel T.; Kubota, Jun; Domen, Kazunari; Takanabe, Kazuhiro

    2013-01-01

    Tantalum carbide and nitride nanocrystals were prepared through the reaction of a tantalum precursor with mesoporous graphitic (mpg)-C 3N4. The effects of the reaction temperature, the ratio of the Ta precursor to the reactive template (mpg-C3N4), and the selection of the carrier gas (Ar, N2 and NH3) on the resultant crystal phases and structures were investigated. The produced samples were characterized using powder X-ray diffraction (XRD), CHN elemental analyses, thermogravimetric analyses (TGA), nitrogen sorption, a temperature-programmed reaction with mass spectroscopy (MS), X-ray photoelectron spectroscopy (XPS), and transmission electron microscopy (TEM). The results indicate that the different tantalum phases with cubic structure, TaN, Ta2CN, and TaC, can be formed under a flow of nitrogen when formed at different temperatures. The Ta3N5 phase with a Ta5+ oxidation state was solely obtained at 1023 K under a flow of ammonia, which gasified the C 3N4 template and was confirmed by detecting the decomposed gaseous products via MS. Significantly, the formation of TaC, Ta2CN, and TaN can be controlled by altering the weight ratio of the C 3N4 template relative to the Ta precursor at 1573 K under a flow of nitrogen. The high C3N4/Ta precursor ratio generally resulted in high carbide content rather than a nitride one, consistent with the role of mpg-C3N4 as a carbon source. Electrochemical measurements revealed that the synthesized nanomaterials were consistently able to produce hydrogen under acidic conditions (pH 1). The obtained Tafel slope indicates that the rate-determining step is the Volmer discharge step, which is consistent with adsorbed hydrogen being weakly bound to the surface during electrocatalysis. © 2013 The Royal Society of Chemistry.

  20. High Temperature Corrosion of Silicon Carbide and Silicon Nitride in Water Vapor

    Science.gov (United States)

    Opila, E. J.; Robinson, Raymond C.; Cuy, Michael D.; Gray, Hugh R. (Technical Monitor)

    2002-01-01

    Silicon carbide (SiC) and silicon nitride (Si3N4) are proposed for applications in high temperature combustion environments containing water vapor. Both SiC and Si3N4 react with water vapor to form a silica (SiO2) scale. It is therefore important to understand the durability of SiC, Si3N4 and SiO2 in water vapor. Thermogravimetric analyses, furnace exposures and burner rig results were obtained for these materials in water vapor at temperatures between 1100 and 1450 C and water vapor partial pressures ranging from 0.1 to 3.1 atm. First, the oxidation of SiC and Si3N4 in water vapor is considered. The parabolic kinetic rate law, rate dependence on water vapor partial pressure, and oxidation mechanism are discussed. Second, the volatilization of silica to form Si(OH)4(g) is examined. Mass spectrometric results, the linear kinetic rate law and a volatilization model based on diffusion through a gas boundary layer are discussed. Finally, the combined oxidation and volatilization reactions, which occur when SiC or Si3N4 are exposed in a water vapor-containing environment, are presented. Both experimental evidence and a model for the paralinear kinetic rate law are shown for these simultaneous oxidation and volatilization reactions.

  1. Binary and ternary carbides and nitrides of the transition metals and their phase relations

    International Nuclear Information System (INIS)

    Holleck, H.

    1981-01-01

    The occurrance and the structure of the binary and ternary transition metal carbides and nitrides are described. Phase diagrams are assessed for most of the binary and ternary systems. Many ternary phase diagrams are published in this report for the first time. (orig.) [de

  2. DEVELOPMENT OF CARBIDE AND NITRIDE CERAMICS OF INCREASED RESISTIBILITY

    Directory of Open Access Journals (Sweden)

    O. V. Roman

    2005-01-01

    Full Text Available The developments of carbide and nitrite ceramics of high solidity are presented. It is shown that development of nanotechnology led to creation of thenanostructural ceramics, the composition of which is controlled on cluster level.

  3. Analytical and experimental evaluation of joining silicon carbide to silicon carbide and silicon nitride to silicon nitride for advanced heat engine applications Phase 2. Final report

    Energy Technology Data Exchange (ETDEWEB)

    Sundberg, G.J.; Vartabedian, A.M.; Wade, J.A.; White, C.S. [Norton Co., Northboro, MA (United States). Advanced Ceramics Div.

    1994-10-01

    The purpose of joining, Phase 2 was to develop joining technologies for HIP`ed Si{sub 3}N{sub 4} with 4wt% Y{sub 2}O{sub 3} (NCX-5101) and for a siliconized SiC (NT230) for various geometries including: butt joins, curved joins and shaft to disk joins. In addition, more extensive mechanical characterization of silicon nitride joins to enhance the predictive capabilities of the analytical/numerical models for structural components in advanced heat engines was provided. Mechanical evaluation were performed by: flexure strength at 22 C and 1,370 C, stress rupture at 1,370 C, high temperature creep, 22 C tensile testing and spin tests. While the silicon nitride joins were produced with sufficient integrity for many applications, the lower join strength would limit its use in the more severe structural applications. Thus, the silicon carbide join quality was deemed unsatisfactory to advance to more complex, curved geometries. The silicon carbide joining methods covered within this contract, although not entirely successful, have emphasized the need to focus future efforts upon ways to obtain a homogeneous, well sintered parent/join interface prior to siliconization. In conclusion, the improved definition of the silicon carbide joining problem obtained by efforts during this contract have provided avenues for future work that could successfully obtain heat engine quality joins.

  4. The Effects of Thermal Cycling on Gallium Nitride and Silicon Carbide Semiconductor Devices for Aerospace Use

    Science.gov (United States)

    Patterson, Richard L.; Hammoud, Ahmad

    2012-01-01

    Electronics designed for use in NASA space missions are required to work efficiently and reliably under harsh environment conditions. These Include radiation, extreme temperatures, thermal cycling, to name a few. Preliminary data obtained on new Gallium Nitride and Silicon Carbide power devices under exposure to radiation followed by long term thermal cycling are presented. This work was done in collaboration with GSFC and JPL in support of the NASA Electronic Parts and Packaging (NEPP) Program

  5. Conducting metal oxide and metal nitride nanoparticles

    Science.gov (United States)

    DiSalvo, Jr., Francis J.; Subban, Chinmayee V.

    2017-12-26

    Conducting metal oxide and nitride nanoparticles that can be used in fuel cell applications. The metal oxide nanoparticles are comprised of for example, titanium, niobium, tantalum, tungsten and combinations thereof. The metal nitride nanoparticles are comprised of, for example, titanium, niobium, tantalum, tungsten, zirconium, and combinations thereof. The nanoparticles can be sintered to provide conducting porous agglomerates of the nanoparticles which can be used as a catalyst support in fuel cell applications. Further, platinum nanoparticles, for example, can be deposited on the agglomerates to provide a material that can be used as both an anode and a cathode catalyst support in a fuel cell.

  6. Study on the performance of fuel elements with carbide and carbide-nitride fuel

    International Nuclear Information System (INIS)

    Golovchenko, Yu.M.; Davydov, E.F.; Maershin, A.A.

    1985-01-01

    Characteristics, test conditions and basic results of material testing of fuel elements with carbide and carbonitride fuel irradiated in the BOR-60 reactor up to 3-10% burn-up at specific power rate of 55-70 kW/m and temperatures of the cladding up to 720 deg C are described. Increase of cladding diameter is stated mainly to result from pressure of swelling fuel. The influence of initial efficient porosity of the fuel on cladding deformation and fuel stoichiometry on steel carbonization is considered. Utilization of carbide and carbonitride fuel at efficient porosity of 20% at the given test modes is shown to ensure their operability up to 10% burn-up

  7. Comparison of P-containing {gamma}-Al{sub 2}O{sub 3} supported Ni-Mo bimetallic carbide, nitride and sulfide catalysts for HDN and HDS of gas oils derived from Athabasca bitumen

    Energy Technology Data Exchange (ETDEWEB)

    Sundaramurthy, V.; Dalai, A.K. [Catalysis and Chemical Reaction Engineering Laboratories, Department of Chemical Engineering, University of Saskatchewan, Saskatoon, SK (Canada); Adjaye, J. [Syncrude Edmonton Research Centre, Edmonton, AB (Canada)

    2006-09-01

    Phosphorus containing {gamma}-Al{sub 2}O{sub 3} supported bimetallic Ni-Mo carbide, nitride and sulfide catalysts have been synthesized from an oxide precursor containing 12.73wt.% Mo, 2.54wt.% Ni and 2.38wt.% P and characterized by elemental analysis, pulsed CO chemisorption, surface area measurements, X-ray diffraction, temperature-programmed reduction and DRIFT spectroscopy of CO adsorption. DRIFT spectroscopy of adsorbed CO on activated catalysts showed that carbide and nitride catalysts have surface exposed sites of Mo{sup o+} (0carbide, nitride and sulfide catalysts were compared against commercial Ni-Mo/Al{sub 2}O{sub 3} catalyst in a trickle bed reactor using light gas oil and heavy gas oil derived from Athabasca bitumen in the temperature range 340-370 and 375-400{sup o}C respectively at 8.8MPa. The gradual transformation of Ni-Mo carbide and nitride phases into Ni-Mo sulfide phases was observed during precoking period, and the formed Ni-Mo sulfide phases enhanced the HDN and HDS activities of carbide and nitride catalysts. The {gamma}-Al{sub 2}O{sub 3} supported Ni-Mo bimetallic sulfide catalyst was found to be more active for HDN and HDS of light gas oil and heavy gas oil than the corresponding carbide and nitride catalysts on the basis of unit weight. (author)

  8. Multilayer-Forming Behavior of Cr Nitrides and Carbides for Thermoreactive Deposition

    Directory of Open Access Journals (Sweden)

    Kyeongmo Park

    2018-05-01

    Full Text Available The effect of a nitride layer on the forming behavior of CrN and (Cr, Fe7C3 multilayers for thermoreactive deposition (TRD was investigated. Plasma nitriding followed by TRD (PN-TRD produced a larger coating thickness than the case of direct TRD with no plasma nitriding. For PN-TRD, an Fe2-3N layer of 10 μm in thickness was produced on AISI 52100 steels using plasma nitriding, followed by TRD using a mixed powder composed of 30 wt % Cr, 2 wt % NH4Cl, and 68 wt % Al2O3. During TRD at 800 °C, a CrN layer of 2 μm in thickness was formed along with a thin layer of mixed carbide (Cr7C3 and nitride (CrN on top. As the deposition temperature was increased to 950 °C, a new layer of Cr7C3 was formed underneath the outermost layer composed of mixed Cr7C3 and CrN. At 950 °C, a Cr-rich zone indicated a thickness of ~7 μm. As the deposition time increased to 3 h at 950 °C, a new layer of (Cr, Fe7C3 was produced at the interface between the CrN formed at 800 °C and the base metal. This layer formed because of the abundant resources of Cr and C provided from the TRD powder and base metal, respectively. The multilayer and interface were concretely filled without the formation of voids as the TRD time increased to 6 h at 950 °C. The TRD process on a pre-nitrided layer was successfully applied to produce multilayers of CrN and Cr7C3.

  9. Study of the stability of ordered phases in non-stoichiometric transition metal carbides and nitrides

    International Nuclear Information System (INIS)

    Landesman, J.P.

    1986-03-01

    After presenting the results of neutron diffraction experiments on the ordered compounds Nb 6 C 5 and Ti 2 N, we propose a classification of the ordered phases encountered in this class of compounds, and, using a tight-binding description of the electronic structure, we calculate the band energy for several ordered configurations and the disordered configuration, for a given metalloid vacancy concentration. We can then, on one hand, predict the relative stability (at O K) of the various ordered phases possible at this concentration - and these predictions are in good agreement with the experimental observations, mainly in the case of carbides - and on the other hand calculate the effective pair interactions V 1 and V 2 which appear in the Ising model and reconstruct theoretical stability maps, for any vacancy concentration, which are again in agreement with the phenomenological stability maps (overall agreement in the case of nitrides, more precise agreement in the case of carbides) [fr

  10. Oxide film assisted dopant diffusion in silicon carbide

    Energy Technology Data Exchange (ETDEWEB)

    Tin, Chin-Che, E-mail: cctin@physics.auburn.ed [Department of Physics, Auburn University, Alabama 36849 (United States); Mendis, Suwan [Department of Physics, Auburn University, Alabama 36849 (United States); Chew, Kerlit [Department of Electrical and Electronic Engineering, Faculty of Engineering and Science, Universiti Tunku Abdul Rahman, Kuala Lumpur (Malaysia); Atabaev, Ilkham; Saliev, Tojiddin; Bakhranov, Erkin [Physical Technical Institute, Uzbek Academy of Sciences, 700084 Tashkent (Uzbekistan); Atabaev, Bakhtiyar [Institute of Electronics, Uzbek Academy of Sciences, 700125 Tashkent (Uzbekistan); Adedeji, Victor [Department of Chemistry, Geology and Physics, Elizabeth City State University, North Carolina 27909 (United States); Rusli [School of Electrical and Electronic Engineering, Nanyang Technological University (Singapore)

    2010-10-01

    A process is described to enhance the diffusion rate of impurities in silicon carbide so that doping by thermal diffusion can be done at lower temperatures. This process involves depositing a thin film consisting of an oxide of the impurity followed by annealing in an oxidizing ambient. The process uses the lower formation energy of silicon dioxide relative to that of the impurity-oxide to create vacancies in silicon carbide and to promote dissociation of the impurity-oxide. The impurity atoms then diffuse from the thin film into the near-surface region of silicon carbide.

  11. Oxide film assisted dopant diffusion in silicon carbide

    International Nuclear Information System (INIS)

    Tin, Chin-Che; Mendis, Suwan; Chew, Kerlit; Atabaev, Ilkham; Saliev, Tojiddin; Bakhranov, Erkin; Atabaev, Bakhtiyar; Adedeji, Victor; Rusli

    2010-01-01

    A process is described to enhance the diffusion rate of impurities in silicon carbide so that doping by thermal diffusion can be done at lower temperatures. This process involves depositing a thin film consisting of an oxide of the impurity followed by annealing in an oxidizing ambient. The process uses the lower formation energy of silicon dioxide relative to that of the impurity-oxide to create vacancies in silicon carbide and to promote dissociation of the impurity-oxide. The impurity atoms then diffuse from the thin film into the near-surface region of silicon carbide.

  12. Formation and characterization of titanium nitride and titanium carbide films prepared by reactive sputtering

    International Nuclear Information System (INIS)

    Sundgren, J.-E.

    1982-01-01

    Titanium has been reactively r.f. sputtered in mixed Ar-N 2 and Ar-CH 4 discharges on to substrates held at 775 K. The films obtained have been characterized by scanning electron microscopy, X-ray diffraction and by measurements of hardness and electrical resistivity. The compositions of the films have been determined using Auger electron spectroscopy. The processes occurring both on substrates and target surfaces have been studied and it is shown that the latter is of great importance for the composition and structure of deposited films. Titanium nitride films of full density and with electrical resistivity and hardness values close to those of bulk TiN were only obtained in a narrow range close to the stoichiometric composition. Titanium carbide films grown on non-biased substrates were found to have an open structure and thus a low density. A bias applied to the substrate, however, improved the quality of the films. It is also shown that the heat of formation of the compounds plays an important role in the formation of carbides and nitrides. A large value promotes the development of large grains and dense structures. (Auth.)

  13. Synthesis of IV-VI Transition Metal Carbide and Nitride Nanoparticles Using a Reactive Mesoporous Template for Electrochemical Hydrogen Evolution Reaction

    KAUST Repository

    Alhajri, Nawal Saad

    2016-01-01

    Interstitial carbides and nitrides of early transition metals in Groups IV-VI exhibit platinum-like behavior which makes them a promising candidate to replace noble metals in a wide variety of reactions. Most synthetic methods used to prepare

  14. The oxidation of titanium nitride- and silicon nitride-coated stainless steel in carbon dioxide environments

    International Nuclear Information System (INIS)

    Mitchell, D.R.G.; Stott, F.H.

    1992-01-01

    A study has been undertaken into the effects of thin titanium nitride and silicon nitride coatings, deposited by physical vapour deposition and chemical vapour deposition processes, on the oxidation resistance of 321 stainless steel in a simulated advanced gas-cooled reactor carbon dioxide environment for long periods at 550 o C and 700 o C under thermal-cycling conditions. The uncoated steel contains sufficient chromium to develop a slow-growing chromium-rich oxide layer at these temperatures, particularly if the surfaces have been machine-abraded. Failure of this layer in service allows formation of less protective iron oxide-rich scales. The presence of a thin (3-4 μm) titanium nitride coating is not very effective in increasing the oxidation resistance since the ensuing titanium oxide scale is not a good barrier to diffusion. Even at 550 o C, iron oxide-rich nodules are able to develop following relatively rapid oxidation and breakdown of the coating. At 700 o C, the coated specimens oxidize at relatively similar rates to the uncoated steel. A thin silicon nitride coating gives improved oxidation resistance, with both the coating and its slow-growing oxide being relatively electrically insulating. The particular silicon nitride coating studied here was susceptible to spallation on thermal cycling, due to an inherently weak coating/substrate interface. (Author)

  15. From nitrides to carbides: topotactic synthesis of the eta-carbides Fe3Mo3C and Co3Mo3C.

    Science.gov (United States)

    Alconchel, Silvia; Sapiña, Fernando; Martínez, Eduardo

    2004-08-21

    The molybdenum bimetallic interstitial carbides Fe(3)Mo(3)C and Co(3)Mo(3)C have been synthesized by temperature-programmed reaction (TPR) between the molybdenum bimetallic interstitial nitrides Fe(3)Mo(3)N and Co(3)Mo(3)N and a flowing mixture of CH(4) and H(2) diluted in Ar. These compounds have been characterized by X-ray diffraction, laser Raman spectroscopy, elemental analysis, energy dispersive analysis of X rays, thermal analysis (in air) and scanning electron microscopy (field emission). Their structures have been refined from X-ray powder diffraction data. These carbides crystallize in the cubic system, space group Fd3m[a= 11.11376(6) and 11.0697(3)[Angstrom] for Fe and Co compounds, respectively].

  16. Catalytic activity of metall-like carbides in carbon oxide oxidation reaction

    International Nuclear Information System (INIS)

    Kharlamov, A.I.; Kosolapova, T.Ya.; Rafal, A.N.; Kirillova, N.V.

    1980-01-01

    Kinetics of carbon oxide oxidation upon carbides of hafnium, niobium, tantalum, molybdenum, zirconium and chromium is studied. Probable mechanism of the catalysts action is suggested. The established character of the change of the carbide catalytic activity is explained by the change of d-electron contribution to the metal-metal interaction

  17. Oxidation of mullite-zirconia-alumina-silicon carbide composites

    International Nuclear Information System (INIS)

    Baudin, C.; Moya, J.S.

    1990-01-01

    This paper reports the isothermal oxidation of mullite-alumina-zirconia-silicon carbide composites obtained by reaction sintering studied in the temperature interval 800 degrees to 1400 degrees C. The kinetics of the oxidation process was related to the viscosity of the surface glassy layer as well as to the crystallization of the surface film. The oxidation kinetics was halted to T ≤ 1300 degrees C, presumably because of crystallization

  18. Comparative study of titanium carbide and nitride coatings grown by cathodic vacuum arc technique

    International Nuclear Information System (INIS)

    Devia, D.M.; Restrepo-Parra, E.; Arango, P.J.

    2011-01-01

    Titanium nitride (TiN), titanium carbide (TiC) thin films and TiC/TiN bilayers have been deposited on AISI 304 stainless steel substrates by plasma assisted physical vapor deposition technique - reactive pulsed vacuum arc method. The coatings were characterized in terms of crystalline structure, microstructure and chemical nature by X-ray diffraction and X-ray photoelectron spectroscopy, respectively. Tribological behavior was investigated using ball on disc technique. The average coefficient of friction was measured, showing lower values for the TiN/TiC bilayer. Dynamic wear curves were performed for each coating, observing a better wear resistance for TiN/TiC bilayers, compared to TiN and TiC monolayers. On the other hand, the TiCN formation in the TiN/TiC bilayer was observed, being attributed to the interdiffusion between TiN and TiC at the interface. Moreover, the substrate temperature influence was analysing observing a good behavior at T S = 115 °C.

  19. Selective ablation of a titanium nitride film on tungsten carbide substrate using ultrashort laser pulses

    International Nuclear Information System (INIS)

    Oliveira, Eduardo Spinelli

    2017-01-01

    Surface coatings are applied to many cutting tools in the metallurgical industry in order to improve cutting efficiency and extend its useful life. In this work, tests were performed to remove the coating of titanium aluminum nitride (TiAlN) on tungsten carbide (WC-Co) pellets, using an ultrashort laser pulses beam. After determination of the damage thresholds of the film and the substrate, were ablated on the surface of the coating lines using two ablation conditions, it was initially operated on the low fluence regime for the film, and later on the low fluence regime of the substrate, far below the threshold of the film, applying high overlapping pulses. A laser induced breakdown spectroscopy (LIBS) system was set up to monitor the materials present in the plasma generated by the laser, but the system did not present sufficient sensitivity to read the low intensity of the plasma generated in the process and was not used. After the analysis of the traces by electron microscopy, optical profilometer and X-ray fluorescence spectroscopy, it was not possible to determine a safe process to carry out the selective removal of the film in question, however, due to the data obtained and observations of the results in some traces, new possibilities were raised, opening the discussion for future work. (author)

  20. Short-range order studies in nonstoichiometric transition metal carbides and nitrides by neutron diffuse scattering

    International Nuclear Information System (INIS)

    Priem, Thierry

    1988-01-01

    Short-range order in non-stoichiometric transition metal carbides and nitrides (TiN 0.82 , TiC 0.64 , TiC 0.76 , NbC 0.73 and NbC 0.83 ) was investigated by thermal neutron diffuse scattering on G4-4 (L.L.B - Saclay) and D10 (I.L.L. Grenoble) spectrometers. From experimental measurements, we have found that metalloid vacancies (carbon or nitrogen) prefer the f.c.c. third neighbour positions. Ordering interaction energies were calculated within the Ising model framework by three approximations: mean field (Clapp and Moss formula), Monte-Carlo simulation, Cluster variation Method. The energies obtained by the two latter methods are very close, and in qualitative agreement with theoretical values calculated from the band structure. Theoretical phase diagrams were calculated from these ordering energies for TiN x and TiC x ; three ordered structures were predicted, corresponding to compositions Ti 6 N 5 Ti 2 C and Ti 3 C 2 . On the other hand, atomic displacements are induced by vacancies. The metal first neighbours were found to move away from a vacancy, whereas the second neighbours move close to it. Near neighbour atomic displacements were theoretically determined by the lattice statics formalism with results in good agreement with experiment. (author) [fr

  1. Calculations of thermophysical properties of cubic carbides and nitrides using the Debye-Grueneisen model

    International Nuclear Information System (INIS)

    Lu Xiaogang; Selleby, Malin; Sundman, Bo

    2007-01-01

    The thermal expansivities and heat capacities of MX (M = Ti, Zr, Hf, V, Nb, Ta; X = C, N) carbides and nitrides with NaCl structure were calculated using the Debye-Grueneisen model combined with ab initio calculations. Two different approximations for the Grueneisen parameter γ were used in the Debye-Grueneisen model, i.e. the expressions proposed by Slater and by Dugdale and MacDonald. The thermal electronic contribution was evaluated from ab initio calculations of the electronic density of states. The calculated results were compared with CALPHAD assessments and experimental data. It was found that the calculations using the Dugdale-MacDonald γ can account for most of the experimental data. By fitting experimental heat capacity and thermal expansivity data below the Debye temperatures, an estimation of Poisson's ratio was obtained and Young's and shear moduli were evaluated. In order to reach a reasonable agreement with experimental data, it was necessary to use the logarithmic averaged mass of the constituent atoms. The agreements between the calculated and the experimental values for the bulk and Young's moduli are generally better than the agreement for shear modulus

  2. Nitrides and carbides of molybdenum and tungsten with high specific-surface area: their synthesis, structure, and catalytic properties

    International Nuclear Information System (INIS)

    Volpe, L.

    1985-01-01

    Temperature-programmed reactions between trioxides of molybdenum or tungsten and ammonia provide a new method to synthesize dimolybdenum and ditungsten nitrides with specific surface areas to two-hundred-and-twenty and ninety-one square meters per gram, respectively. These are the highest values on record for any unsupported metallic powders. They correspond to three-four nonometer particles. The reaction of molybdenum trioxide with ammonia is topotactic in the sense that one-zero-zero planes of dimolybdenum nitride are parallel to zero-one-zero planes of molybdenum trioxide. As the trioxide transforms, it passes through an oxynitride intermediate with changing bulk structure and increasing surface area and extent of reduction. The nitride product consists of platelets, pseudomorphous with the original trioxide, which can be regarded as highly porous defect single crystals. By treating small particles of dimolybdenum or ditungsten nitride with methane-dihydrogen mixtures it is possible to replace interstitial nitrogen atoms by carbon atoms, without sintering, and thus to prepare carbides of molybdenum and tungsten with very high specific surface areas. Molybdenum nitride powders catalyze ammonia synthesis. A pronounced increase in the catalytic activity with increasing particle size confirms the structure-sensitive character of this reaction

  3. Hafnium carbide formation in oxygen deficient hafnium oxide thin films

    Energy Technology Data Exchange (ETDEWEB)

    Rodenbücher, C. [Forschungszentrum Jülich GmbH, Peter Grünberg Institute (PGI-7), JARA-FIT, 52425 Jülich (Germany); Hildebrandt, E.; Sharath, S. U.; Kurian, J.; Komissinskiy, P.; Alff, L. [Technische Universität Darmstadt, Institute of Materials Science, 64287 Darmstadt (Germany); Szot, K. [Forschungszentrum Jülich GmbH, Peter Grünberg Institute (PGI-7), JARA-FIT, 52425 Jülich (Germany); University of Silesia, A. Chełkowski Institute of Physics, 40-007 Katowice (Poland); Breuer, U. [Forschungszentrum Jülich GmbH, Central Institute for Engineering, Electronics and Analytics (ZEA-3), 52425 Jülich (Germany); Waser, R. [Forschungszentrum Jülich GmbH, Peter Grünberg Institute (PGI-7), JARA-FIT, 52425 Jülich (Germany); RWTH Aachen, Institute of Electronic Materials (IWE 2), 52056 Aachen (Germany)

    2016-06-20

    On highly oxygen deficient thin films of hafnium oxide (hafnia, HfO{sub 2−x}) contaminated with adsorbates of carbon oxides, the formation of hafnium carbide (HfC{sub x}) at the surface during vacuum annealing at temperatures as low as 600 °C is reported. Using X-ray photoelectron spectroscopy the evolution of the HfC{sub x} surface layer related to a transformation from insulating into metallic state is monitored in situ. In contrast, for fully stoichiometric HfO{sub 2} thin films prepared and measured under identical conditions, the formation of HfC{sub x} was not detectable suggesting that the enhanced adsorption of carbon oxides on oxygen deficient films provides a carbon source for the carbide formation. This shows that a high concentration of oxygen vacancies in carbon contaminated hafnia lowers considerably the formation energy of hafnium carbide. Thus, the presence of a sufficient amount of residual carbon in resistive random access memory devices might lead to a similar carbide formation within the conducting filaments due to Joule heating.

  4. Preparation and study of the nitrides and mixed carbide-nitrides of uranium and of plutonium; Preparation et etude des nitrures et carbonitrures d'uranium et de plutonium

    Energy Technology Data Exchange (ETDEWEB)

    Anselin, F [Commissariat a l' Energie Atomique, Fontenay-aux-Roses (France). Centre d' Etudes Nucleaires

    1966-06-01

    A detailed description is given of a simple method for preparing uranium and plutonium nitrides by the direct action of nitrogen under pressure at moderate temperatures (about 400 C) on the partially hydrogenated bulk metal. It is shown that there is complete miscibility between the UN and PuN phases. The variations in the reticular parameters of the samples as a function of temperature and in the presence of oxide have been used to detect and evaluate the solubility of oxygen in the different phases. A study has been made of the sintering of these nitrides as a function of the preparation conditions with or without sintering additives. A favorable but non-reproducible, effect has been found for traces of oxide. The best results were obtained for pure UN at 1600 C (96 per cent theoretical density) on condition that a well defined powder, was used. The criterion used is the integral width of the X-ray diffraction lines. The compounds UN and PuN are completely miscible with the corresponding carbides. This makes it possible to prepare carbide-nitrides of the general formula (U,Pu) (C,N) by solid-phase diffusion, at around 1400 C. The sintering of these carbide-nitrides is similar to that of the carbides if the nitrogen content is low; in particular, nickel is an efficient sintering agent. For high contents, the sintering is similar to that of pure nitrides. (author) [French] On decrit en detail une methode simple de preparation des nitrures d'uranium et de plutonium par action directe de l'azote sous pression, a temperature moyenne (vers 400 C), sur les metaux massifs partiellement hydrures. On montre que la miscibilite est complete entre les phases UN et PuN. L'evolution des parametres reticulaires des echantillons en fonction de la temperature et en presence d'oxyde a ete utilisee pour detecter et estimer la solubilite de l'oxygene dans les diverses phases. On a etudie le frittage de ces nitrures en fonction des conditions de preparation, avec ou sans additif de

  5. Kinetics and mechanism of oxidation of carbidized electrolytic chromium coatings

    International Nuclear Information System (INIS)

    Arkharov, V.I.; Yar-Mukhamedov, Sh.Kh.

    1978-01-01

    Thermal stability carbidized electrolytic chromium coatings has been studied depending on the conditions of their formation; the specific features of the mechanism of oxidation at 1200 deg in an air atmosphere have been elucidated. It has been established that kinetics of high temperature oxidation of the coatings depends essentially on the conditions of their formation and on the composition of steel to which the coating is applied. It has been shown that two oxidation mechanisms are possible: by diffusion of the residual chromium through a carbide layer along the carbide grain boundaries outwards or, when there is no residual chromium, by chemical reaction of carbon combustion and oxidation of the liberated chromium. The comparison of oxidation kinetic curves of the samples of 38KhMYuA, 35KhGSA, and DI-22 steels with and without coating has shown that the coatings under study have a better protective effect on 38KhMYuA steel than on 35KhGSA, although without coating oxidability of the first steel is higher than that of the second

  6. Synthesis of Binary Transition Metal Nitrides, Carbides and Borides from the Elements in the Laser-Heated Diamond Anvil Cell and Their Structure-Property Relations

    Directory of Open Access Journals (Sweden)

    Lkhamsuren Bayarjargal

    2011-09-01

    Full Text Available Transition metal nitrides, carbides and borides have a high potential for industrial applications as they not only have a high melting point but are generally harder and less compressible than the pure metals. Here we summarize recent advances in the synthesis of binary transition metal nitrides, carbides and borides focusing on the reaction of the elements at extreme conditions generated within the laser-heated diamond anvil cell. The current knowledge of their structures and high-pressure properties like high-(p; T stability, compressibility and hardness is described as obtained from experiments.

  7. Synthesis of Binary Transition Metal Nitrides, Carbides and Borides from the Elements in the Laser-Heated Diamond Anvil Cell and Their Structure-Property Relations

    Science.gov (United States)

    Friedrich, Alexandra; Winkler, Björn; Juarez-Arellano, Erick A.; Bayarjargal, Lkhamsuren

    2011-01-01

    Transition metal nitrides, carbides and borides have a high potential for industrial applications as they not only have a high melting point but are generally harder and less compressible than the pure metals. Here we summarize recent advances in the synthesis of binary transition metal nitrides, carbides and borides focusing on the reaction of the elements at extreme conditions generated within the laser-heated diamond anvil cell. The current knowledge of their structures and high-pressure properties like high-(p,T) stability, compressibility and hardness is described as obtained from experiments. PMID:28824101

  8. performance calculations of gadolinium oxide and boron nitride coated fuel

    International Nuclear Information System (INIS)

    Tanker, E.; Uslu, I.; Disbudak, H.; Guenduez, G.

    1997-01-01

    A comparative study was performed on the behaviour of natural uranium dioxide-gadolinium oxide mixture fuel and boron nitride coated low enriched fuel in a pressurized water reactor. A fuel element containing one burnable poison fuel pins was modeled with the computer code WIMS, and burn-up dependent critically, fissile isotope inventory and two dimensional power distribution were obtained. Calculations were performed for burnable poison fuels containing 5% and 10% gadolinium oxide and for those coated with 1μ,5μ and 10μ of boron nitride. Boron nitride coating was found superior to gadolinium oxide on account of its smoother criticality curve, lower power peaks and insignificant change in fissile isotope content

  9. Compositional analysis of silicon oxide/silicon nitride thin films

    Directory of Open Access Journals (Sweden)

    Meziani Samir

    2016-06-01

    Full Text Available Hydrogen, amorphous silicon nitride (SiNx:H abbreviated SiNx films were grown on multicrystalline silicon (mc-Si substrate by plasma enhanced chemical vapour deposition (PECVD in parallel configuration using NH3/SiH4 gas mixtures. The mc-Si wafers were taken from the same column of Si cast ingot. After the deposition process, the layers were oxidized (thermal oxidation in dry oxygen ambient environment at 950 °C to get oxide/nitride (ON structure. Secondary ion mass spectroscopy (SIMS, Rutherford backscattering spectroscopy (RBS, Auger electron spectroscopy (AES and energy dispersive X-ray analysis (EDX were employed for analyzing quantitatively the chemical composition and stoichiometry in the oxide-nitride stacked films. The effect of annealing temperature on the chemical composition of ON structure has been investigated. Some species, O, N, Si were redistributed in this structure during the thermal oxidation of SiNx. Indeed, oxygen diffused to the nitride layer into Si2O2N during dry oxidation.

  10. One-step synthesis of 2D-layered carbon wrapped transition metal nitrides from transition metal carbides (MXenes) for supercapacitors with ultrahigh cycling stability.

    Science.gov (United States)

    Yuan, Wenyu; Cheng, Laifei; Wu, Heng; Zhang, Yani; Lv, Shilin; Guo, Xiaohui

    2018-03-13

    A novel one-step method to synthesize 2D carbon wrapped TiN (C@TiN) was proposed via using 2D metal carbides (MXenes) as precursors. This study provides a novel approach to synthesize carbon wrapped metal nitrides.

  11. The solubility of solid fission products in carbides and nitrides of uranium and plutonium. Part I: literature review on experimental results

    International Nuclear Information System (INIS)

    Benedict, U.

    1977-01-01

    This review compiles the available data on the solubility of the most important non-volatile fission products in the carbides, nitrides, and carbonitrides of uranium and plutonium. It includes some elements which are not fission products, but belong to a group of the Periodic Table which contains one or more fission products elements

  12. Semipolar III-nitride laser diodes with zinc oxide cladding.

    Science.gov (United States)

    Myzaferi, Anisa; Reading, Arthur H; Farrell, Robert M; Cohen, Daniel A; Nakamura, Shuji; DenBaars, Steven P

    2017-07-24

    Incorporating transparent conducting oxide (TCO) top cladding layers into III-nitride laser diodes (LDs) improves device design by reducing the growth time and temperature of the p-type layers. We investigate using ZnO instead of ITO as the top cladding TCO of a semipolar (202¯1) III-nitride LD. Numerical modeling indicates that replacing ITO with ZnO reduces the internal loss in a TCO clad LD due to the lower optical absorption in ZnO. Lasing was achieved at 453 nm with a threshold current density of 8.6 kA/cm 2 and a threshold voltage of 10.3 V in a semipolar (202¯1) III-nitride LD with ZnO top cladding.

  13. Characterization of hard nitride and carbide titanium and zirconium coatings on high-speed steel cutting tool inserts

    International Nuclear Information System (INIS)

    Fenske, G.; Kaufherr, N.; Albertson, C.; Mapalo, G.; Nielsen, R.; Kaminsky, M.

    1986-01-01

    Hard nitride and carbide coatings of titanium and zirconium deposited by reactive evaporation and reactive sputtering techniques were characterized by electron microscopy and Auger spectroscopy to determine the effect of coating process on coating composition and microstructure. Analysis of the chemical composition by Auger spectroscopy revealed the coatings were of high purity with slight differences in stoichiometry depending on the coating technique. Both techniques produced coatings with a columnar microstructure. However, the reactive sputtering technique produced coarser (shorter and wider) columnar grains than the reactive evaporation technique. Furthermore, selected area diffraction analysis of reactively sputtered ZrN coatings showed a two-phased zone (hcp Zr and fcc ZrN) near the substrate/coating interface, while TiC coatings deposited by reactive sputtering and evaporation only showed a single-phase region of fcc TiC

  14. Hydrogen chemisorption and oxidation of transition metal carbides

    International Nuclear Information System (INIS)

    Bethin, J.R.

    1979-01-01

    A study was made of the catalytic activity of WC, focusing on the possible influence of point defects. The chemisorption of H on WC and titanium oxycarbides was studied with differential scanning calorimetry. The catalytic activity of these materials for oxidation of H was determined by potentiostatic steady-state and potentiodynamic measurements in acid electrolyte. Compositions of WC surfaces were determined by x-ray photoemission and related to the catalytic behavior. Titanium oxycarbide surfaces were analyzed by Auger electron spectroscopy. Of the carbides tested only one WC preparation was able to chemisorb H. Both WC powders investigated catalyzed H oxidation with similar specific activities. Spectroscopic studies showed that the active surface of WC was a mixture of WO 3 and a carbon-deficient WC phase. This result indicates that carbon vacancies are the active sites in tungsten carbide. Theoretical models of a carbon vacancy surrounded by metal atoms suggested by calculations by other workers support this assignment and identify the important role of the W6s level. The measured value of the heat of chemisorption is consistent with the proposed model

  15. Electron trapping during irradiation in reoxidized nitrided oxide

    International Nuclear Information System (INIS)

    Mallik, A.; Vasi, J.; Chandorkar, A.N.

    1993-01-01

    Isochronal detrapping experiments have been performed following irradiation under different gate biases in reoxidized nitrided oxide (RNO) MOS capacitors. These show electron trapping by the nitridation-induced electron traps at low oxide fields during irradiation. A difference in the detrapping behavior of trapped holes and electrons is observed, with trapped holes being detrapped at relatively lower temperatures compared to trapped electrons. Electron trapping shows a strong dependence on tile magnitude of the applied gate bias during irradiation but is independent of its polarity. Conventional oxide devices, as expected, do not show any electron trapping during irradiation by the native electron traps. Finally, a comparison of the isochronal detrapping behavior following irradiation and following avalanche injection of electrons has been made to estimate the extent of electron trapping. The results show that electron trapping by the nitridation-induced electron traps does not play the dominant role in improving radiation performance of RNO, though its contribution cannot be completely neglected for low oxide field irradiations

  16. Neutron induced degradation in nitrided pyrogenic field oxide MOS capacitors

    Science.gov (United States)

    Vaidya, S. J.; Sharma, D. K.; Shaikh, A. M.; Chandorkar, A. N.

    2002-09-01

    Neutron induced oxide charge trapping and generation of interface states in MOS capacitors with pyrogenic and nitrided pyrogenic field oxides have been studied. In order to assess the damage due to neutrons alone, it is necessary to account for the damage produced by the accompanying gamma rays from neutron radiation. This is done by measuring the intensity of gamma radiation accompanying neutrons at different neutron fluences at the irradiation position. MOS capacitor structures were subjected to neutron radiation in a swimming pool type of reactor. Other samples from the same batch were then subjected to an equivalent dose of gamma radiation from a Co 60 source. The difference in the damage observed was used to characterize the damage caused by neutrons. It is observed that neutrons, though uncharged, are capable of causing ionization damage. This damage is found to be significant when the radiation is performed under biased conditions. Nitridation in different ambients is found to improve the radiation performance of pyrogenic field oxides with respect to positive charge build up as well as interface state generation. Pyrogenic oxide nitrided in N 2O is found to be the best oxynitride as damage due to neutrons is the least.

  17. Oxidation Protection of Porous Reaction-Bonded Silicon Nitride

    Science.gov (United States)

    Fox, D. S.

    1994-01-01

    Oxidation kinetics of both as-fabricated and coated reaction-bonded silicon nitride (RBSN) were studied at 900 and 1000 C with thermogravimetry. Uncoated RBSN exhibited internal oxidation and parabolic kinetics. An amorphous Si-C-O coating provided the greatest degree of protection to oxygen, with a small linear weight loss observed. Linear weight gains were measured on samples with an amorphous Si-N-C coating. Chemically vapor deposited (CVD) Si3N4 coated RBSN exhibited parabolic kinetics, and the coating cracked severely. A continuous-SiC-fiber-reinforced RBSN composite was also coated with the Si-C-O material, but no substantial oxidation protection was observed.

  18. Neutron induced degradation in nitrided pyrogenic field oxide MOS capacitors

    CERN Document Server

    Vaidya, S J; Shaikh, A M; Chandorkar, A N

    2002-01-01

    Neutron induced oxide charge trapping and generation of interface states in MOS capacitors with pyrogenic and nitrided pyrogenic field oxides have been studied. In order to assess the damage due to neutrons alone, it is necessary to account for the damage produced by the accompanying gamma rays from neutron radiation. This is done by measuring the intensity of gamma radiation accompanying neutrons at different neutron fluences at the irradiation position. MOS capacitor structures were subjected to neutron radiation in a swimming pool type of reactor. Other samples from the same batch were then subjected to an equivalent dose of gamma radiation from a Co sup 6 sup 0 source. The difference in the damage observed was used to characterize the damage caused by neutrons. It is observed that neutrons, though uncharged, are capable of causing ionization damage. This damage is found to be significant when the radiation is performed under biased conditions. Nitridation in different ambients is found to improve the radi...

  19. Turbostratic boron nitride coated on high-surface area metal oxide templates

    DEFF Research Database (Denmark)

    Klitgaard, Søren Kegnæs; Egeblad, Kresten; Brorson, M.

    2007-01-01

    Boron nitride coatings on high-surface area MgAl2O4 and Al2O3 have been synthesized and characterized by transmission electron microscopy and by X-ray powder diffraction. The metal oxide templates were coated with boron nitride using a simple nitridation in a flow of ammonia starting from ammonium...

  20. Modification of silicon nitride and silicon carbide surfaces for food and biosensor applications

    NARCIS (Netherlands)

    Rosso, M.

    2009-01-01

    Silicon-rich silicon nitride (SixN4, x > 3) is a robust insulating material widely used for the coating of microdevices: its high chemical and mechanical inertness make it a material of choice for the reinforcement of fragile microstructures (e.g. suspended microcantilevers, micro-fabricated

  1. Niobium nitride Josephson tunnel junctions with magnesium oxide barriers

    International Nuclear Information System (INIS)

    Shoji, A.; Aoyagi, M.; Kosaka, S.; Shinoki, F.; Hayakawa, H.

    1985-01-01

    Niobium nitride-niobium nitride Josephson tunnel junctions have been fabricated using amorphous magnesium oxide (a-MgO) films as barriers. These junctions have excellent tunneling characteristics. For example, a large gap voltage (V/sub g/ = 5.1 mV), a large product of the maximum critical current and the normal tunneling resistance (I/sub c/R/sub n/ = 3.25 mV), and a small subgap leakage current (V/sub m/ = 45 mV, measured at 3 mV) have been obtained for a NbN/a-MgO/NbN junction. The critical current of this junction remains finite up to 14.5 K

  2. Reaction sintering of a clay-containing silicon nitride bonded silicon carbide refractory

    International Nuclear Information System (INIS)

    Swenser, S.P.; Cheng, Y.B.

    1998-01-01

    Aspects of the reaction sequence for the reaction bonding of a cast refractory, which in the green state was composed of 79 wt-% SiC grit, 16 wt-% Si powder and 5 wt-% clay were established. As it was fired up to 1600 deg C in flowing N 2 (g), weight gains were noted and phase evolution was monitored by X-ray diffraction. However, details of the reaction sequence were not determined directly from this material because several reaction-bonding processes occurred simultaneously. Reaction features were ascertained by contrasting the weight changes and phase evolution in the refractory with those observed during reaction-bonding of (a) Si and clay without the SiC and (b) SiC and clay without the Si. In addition to silicon nitridation and the development of sialon phases by silicothermal and carbothermal reduction-nitridation processes, indirect evidence suggested that α-Si 3 N 4 formed by the carbothermal reduction-nitridation (CRN) of SiO(g). Copyright (1998) Australasian Ceramic Society

  3. Synthesis of reduced carbon nitride at the reduction by hydroquinone of water-soluble carbon nitride oxide (g-C{sub 3}N{sub 4})O

    Energy Technology Data Exchange (ETDEWEB)

    Kharlamov, Alexey [Frantsevich Institute for Problems of Materials Science of NASU, Krzhyzhanovsky St. 3, 03680 Kiev (Ukraine); Bondarenko, Marina, E-mail: mebondarenko@ukr.net [Frantsevich Institute for Problems of Materials Science of NASU, Krzhyzhanovsky St. 3, 03680 Kiev (Ukraine); Kharlamova, Ganna [Taras Shevchenko National University of Kiev, Volodymyrs' ka St. 64, 01601 Kiev (Ukraine); Fomenko, Veniamin [Frantsevich Institute for Problems of Materials Science of NASU, Krzhyzhanovsky St. 3, 03680 Kiev (Ukraine)

    2016-09-15

    For the first time at the reduction by hydroquinone of water-soluble carbon nitride oxide (g-C{sub 3}N{sub 4})O reduced carbon nitride (or reduced multi-layer azagraphene) is obtained. It is differed from usually synthesized carbon nitride by a significantly large (on 0.09 nm) interplanar distance is. At the same time, the chemical bonds between atoms in a heteroatomic plane of reduced carbon nitride correspond to the bonds in a synthesized g-C{sub 3}N{sub 4}. The samples of water-soluble carbon nitride oxide were synthesized under the special reactionary conditions of a pyrolysis of melamine and urea. We believe that reduced carbon nitride consists of weakly connected carbon-nitrogen monosheets (azagraphene sheets) as well as reduced (from graphene oxide) graphene contains weakly connected graphene sheets. - Graphical abstract: XRD pattern and schematic atomic model of one layer of reduced carbon nitride, carbon nitride oxide and synthesized carbon nitride. For the first time at the reduction by hydroquinone of the water-soluble carbon nitride oxide (g-C{sub 3}N{sub 4})O is obtained the reduced carbon nitride (or reduced multi-layer azagraphene). Display Omitted - Highlights: • First the reduced carbon nitride (RCN) at the reduction of the carbon nitride oxide was obtained. • Water-soluble carbon nitride oxide was reduced by hydroquinone. • The chemical bonds in a heteroatomic plane of RCN correspond to the bonds in a synthesized g-C{sub 3}N{sub 4}. • Reduced carbon nitride consists of poorly connected heteroatomic azagraphene layers.

  4. The suitability of silicon carbide for photocatalytic water oxidation

    Science.gov (United States)

    Aslam, M.; Qamar, M. T.; Ahmed, Ikram; Rehman, Ateeq Ur; Ali, Shahid; Ismail, I. M. I.; Hameed, Abdul

    2018-04-01

    Silicon carbide (SiC), owing to its extraordinary chemical stability and refractory properties, is widely used in the manufacturing industry. Despite the semiconducting nature and morphology-tuned band gap, its efficacy as photocatalysts has not been thoroughly investigated. The current study reports the synthesis, characterization and the evaluation of the capability of silicon carbide for hydrogen generation from water splitting. The optical characterization of the as-synthesized powder exposed the formation of multi-wavelength absorbing entities in synthetic process. The structural analysis by XRD and the fine microstructure analysis by HRTEM revealed the cubic 3C-SiC (β-SiC) and hexagonal α-polymorphs (2H-SiC and 6H-SiC) as major and minor phases, respectively. The Mott-Schottky analysis verified the n-type nature of the material with the flat band potential of - 0.7 V. In the electrochemical evaluation, the sharp increase in the peak currents in various potential ranges, under illumination, revealed the plausible potential of the material for the oxidation of water and generation of hydrogen. The generation of hydrogen and oxygen, as a consequence of water splitting in the actual photocatalytic experiments, was observed and measured. A significant increase in the yield of hydrogen was noticed in the presence of methanol as h + scavenger, whereas a retarding effect was offered by the Fe3+ entities that served as e - scavengers. The combined effect of both methanol and Fe3+ ions in the photocatalytic process was also investigated. Besides hydrogen gas, the other evolved gasses such as methane and carbon monoxide were also measured to estimate the mechanism of the process.

  5. Direct comparison of the electrical properties in metal/oxide/nitride/oxide/silicon and metal/aluminum oxide/nitride/oxide/silicon capacitors with equivalent oxide thicknesses

    Energy Technology Data Exchange (ETDEWEB)

    An, Ho-Myoung; Seo, Yu Jeong; Kim, Hee Dong; Kim, Kyoung Chan; Kim, Jong-Guk [School of Electrical Engineering, Korea University, Seoul 136-713 (Korea, Republic of); Cho, Won-Ju; Koh, Jung-Hyuk [Department of Electronic Materials Engineering, Kwangwoon University, Seoul 139-701 (Korea, Republic of); Sung, Yun Mo [Department of Materials and Science Engineering, Korea University, Seoul 136-713 (Korea, Republic of); Kim, Tae Geun, E-mail: tgkim1@korea.ac.k [School of Electrical Engineering, Korea University, Seoul 136-713 (Korea, Republic of)

    2009-07-31

    We examine the electrical properties of metal/oxide/nitride/oxide/silicon (MONOS) capacitors with two different blocking oxides, SiO{sub 2} and Al{sub 2}O{sub 3}, under the influence of the same electric field. The thickness of the Al{sub 2}O{sub 3} layer is set to 150 A, which is electrically equivalent to a thickness of the SiO{sub 2} layer of 65 A, in the MONOS structure for this purpose. The capacitor with the Al{sub 2}O{sub 3} blocking layer shows a larger capacitance-voltage memory window of 8.6 V, lower program voltage of 7 V, faster program/erase speeds of 10 ms/1 {mu}s, lower leakage current of 100 pA and longer data retention than the one with the SiO{sub 2} blocking layer does. These improvements are attributed to the suppression of the carrier transport to the gate electrode afforded by the use of an Al{sub 2}O{sub 3} blocking layer physically thicker than the SiO{sub 2} one, as well as the effective charge-trapping by Al{sub 2}O{sub 3} at the deep energy levels in the nitride layer.

  6. Corrosion behaviour of porous chromium carbide/oxide based ceramics in supercritical water

    International Nuclear Information System (INIS)

    Dong, Z.; Xin, T.; Chen, W.; Zheng, W.; Guzonas, D.

    2011-01-01

    Porous chromium carbide with a high density of open pores was fabricated by a reactive sintering method. Chromium oxide ceramics were obtained by re-oxidizing the porous chromium carbides formed. Some samples were added with yttria at 5 wt. %, prior to reactive sintering to form porous structures. Corrosion tests in SCW were performed at temperatures ranging from 375 o C to 625 o C with a fixed pressure at around 25∼30 MPa. The results show that chromium carbide is stable in SCW environments at temperatures up to 425 o C, above which disintegration of carbides through oxidation occurs. Porous chromium oxide samples show better corrosion resistance than porous chromium carbide, but disintegrate in SCW at around 625 o C. Among all the samples tested, chromium oxide ceramics with added yttria exhibited much better corrosion resistance compared with the pure chromium carbide/oxides. No evidence of weight change or disintegration of porous chromium oxides with 5 wt % added yttria was observed after exposure at 625 o C in SCW for 600 hours. (author)

  7. Plasma synthesis of titanium nitride, carbide and carbonitride nanoparticles by means of reactive anodic arc evaporation from solid titanium

    International Nuclear Information System (INIS)

    Kiesler, D.; Bastuck, T.; Theissmann, R.; Kruis, F. E.

    2015-01-01

    Plasma methods using the direct evaporation of a transition metal are well suited for the cost-efficient production of ceramic nanoparticles. In this paper, we report on the development of a simple setup for the production of titanium-ceramics by reactive anodic arc evaporation and the characterization of the aerosol as well as the nanopowder. It is the first report on TiC X N 1 − X synthesis in a simple anodic arc plasma. By means of extensive variations of the gas composition, it is shown that the composition of the particles can be tuned from titanium nitride over a titanium carbonitride phase (TiC X N 1 − X ) to titanium carbide as proven by XRD data. The composition of the plasma gas especially a very low concentration of hydrocarbons around 0.2 % of the total plasma gas is crucial to tune the composition and to avoid the formation of free carbon. Examination of the particles by HR-TEM shows that the material consists mostly of cubic single crystalline particles with mean sizes between 8 and 27 nm

  8. Neutronic study using oxide and nitride fuels for the Super Phenix 2 reactor

    International Nuclear Information System (INIS)

    Batista, J.L.; Renke, C.A.C.

    1991-11-01

    This report presents a neutronic analysis and a description of the Super Phenix 2 reactor, taken as reference. We present the methodology and results for cell and global reactor calculations for oxide (U O 2 - Pu O 2 ) and nitride (U N - Pu N) fuels. To conclude we compare the performance of oxide and nitride fuels for the reference reactor. (author)

  9. Survey of post-irradiation examinations made of mixed carbide fuels

    International Nuclear Information System (INIS)

    Coquerelle, M.

    1997-01-01

    Post-irradiation examinations on mixed carbide, nitride and carbonitride fuels irradiated in fast flux reactors Rapsodie and DFR were carried out during the seventies and early eighties. In this report, emphasis was put on the fission gas release, cladding carburization and head-end gaseous oxidation process of these fuels, in particular, of mixed carbides. (author). 8 refs, 16 figs, 3 tabs

  10. Synthesis of IV-VI Transition Metal Carbide and Nitride Nanoparticles Using a Reactive Mesoporous Template for Electrochemical Hydrogen Evolution Reaction

    KAUST Repository

    Alhajri, Nawal Saad

    2016-01-01

    Interstitial carbides and nitrides of early transition metals in Groups IV-VI exhibit platinum-like behavior which makes them a promising candidate to replace noble metals in a wide variety of reactions. Most synthetic methods used to prepare these materials lead to bulk or micron size powder which limits their use in reactions in particular in catalytic applications. Attempts toward the production of transition metal carbide and nitride nanoparticles in a sustainable, simple and cheap manner have been rapidly increasing. In this thesis, a new approach was presented to prepare nano-scale transition metal carbides and nitrides of group IV-VI with a size as small as 3 nm through the reaction of transition metal precursor with mesoporous graphitic carbon nitride (mpg-C3N4) that not only provides confined spaces for nanoparticles formation but also acts as a chemical source of nitrogen and carbon. The produced nanoparticles were characterized by powder X-ray diffraction (XRD), temperature-programmed reaction with mass spectroscopy (MS), CHN elemental analyses, thermogravimetric analyses (TGA), nitrogen sorption, X-ray photoelectron spectroscopy (XPS), and transmission electron microscopy (TEM). The effects of the reaction temperature, the ratio of the transition metal precursor to the reactive template (mpg-C3N4), and the selection of the carrier gas (Ar, N2, and NH3) on the resultant crystal phases and structures were investigated. The results indicated that different tantalum phases with cubic structure, TaN, Ta2CN, and TaC, can be formed under a flow of nitrogen by changing the reaction temperatures. Two forms of tantalum nitride, namely TaN and Ta3N5, were selectively formed under N2 and NH3 flow, respectively. Significantly, the formation of TaC, Ta2CN, and TaN can be controlled by altering the weight ratio of the C3N4 template relative to the Ta precursor at 1573 K under a flow of nitrogen where high C3N4/Ta precursor ratio generally resulted in high carbide

  11. Oxide-nitride-oxide dielectric stacks with Si nanoparticles obtained by low-energy ion beam synthesis

    International Nuclear Information System (INIS)

    Ioannou-Sougleridis, V; Dimitrakis, P; Vamvakas, V Em; Normand, P; Bonafos, C; Schamm, S; Mouti, A; Assayag, G Ben; Paillard, V

    2007-01-01

    Formation of a thin band of silicon nanoparticles within silicon nitride films by low-energy (1 keV) silicon ion implantation and subsequent thermal annealing is demonstrated. Electrical characterization of metal-insulator-semiconductor capacitors reveals that oxide/Si-nanoparticles-nitride/oxide dielectric stacks exhibit enhanced charge transfer characteristics between the substrate and the silicon nitride layer compared to dielectric stacks using unimplanted silicon nitride. Attractive results are obtained in terms of write/erase memory characteristics and data retention, indicating the large potential of the low-energy ion-beam-synthesis technique in SONOS memory technology

  12. Reduction of metal oxides in metal carbide fusion superheated with plasma

    Energy Technology Data Exchange (ETDEWEB)

    Hedai, L

    1981-01-01

    A significant part of metals is capable of binding a high quantity of carbon in the form of carbide. The carbide fusion produced as a result of smelting and superheating, metal carbides with the use of plasma might be a medium to be utilized for the reduction of different metal oxides, whilst also the original carbide structure of the metal carbides will be reduced to metallic structure. The experiments conducted by making use of plasma equipment, of 20, 55 and 100 kW performances are described. On the basis of the results of the experiments performed, the following statements are to be made. The oxide reductions taking place in the metal carbide fusion might also be carried out in open-hearth furnaces, because reducing atmosphere is not necessitated during this procedure. The quantity of energy required is basically defined by the energy needed for smelting and superheating the metal carbide. The method for producing the metal described may be mainly applied for the allied production of high-purity steels as well as for that of ferro-alloys.

  13. Characterization of Interface State in Silicon Carbide Metal Oxide Semiconductor Capacitors

    Science.gov (United States)

    Kao, Wei-Chieh

    Silicon carbide (SiC) has always been considered as an excellent material for high temperature and high power devices. Since SiC is the only compound semiconductor whose native oxide is silicon dioxide (SiO2), it puts SiC in a unique position. Although SiC metal oxide semiconductor (MOS) technology has made significant progress in recent years, there are still a number of issues to be overcome before more commercial SiC devices can enter the market. The prevailing issues surrounding SiC MOSFET devices are the low channel mobility, the low quality of the oxide layer and the high interface state density at the SiC/SiO2 interface. Consequently, there is a need for research to be performed in order to have a better understanding of the factors causing the poor SiC/SiO2 interface properties. In this work, we investigated the generation lifetime in SiC materials by using the pulsed metal oxide semiconductor (MOS) capacitor method and measured the interface state density distribution at the SiC/SiO2 interface by using the conductance measurement and the high-low frequency capacitance technique. These measurement techniques have been performed on n-type and p-type SiC MOS capacitors. In the course of our investigation, we observed fast interface states at semiconductor-dielectric interfaces in SiC MOS capacitors that underwent three different interface passivation processes, such states were detected in the nitrided samples but not observed in PSG-passivated samples. This result indicate that the lack of fast states at PSG-passivated interface is one of the main reasons for higher channel mobility in PSG MOSFETs. In addition, the effect of mobile ions in the oxide on the response time of interface states has been investigated. In the last chapter we propose additional methods of investigation that can help elucidate the origin of the particular interface states, enabling a more complete understanding of the SiC/SiO2 material system.

  14. On the effect of pre-oxidation on the nitriding kinetics

    DEFF Research Database (Denmark)

    Friehling, Peter Bernhard; Somers, Marcel A. J.

    2000-01-01

    The oxidation of ferritic surfaces prior to gaseous nitriding has been reported to lead to improved uniformity of the compound layer thickness and enhanced nitriding kinetics. The present work considers the nucleation and growth of a model compound layer on pure iron and, using previous...... experimental and theoretical work reported in the literature, puts forward two hypotheses to explain the effects of pre-oxidation on compound layer formation. It is proposed that the nucleation of iron nitrides is enhanced by the presence of an iron-oxide layer and that the growth of an iron-nitride layer...... proceeds faster after pre-oxidation, due to a higher nitrogen content in the part of the compound layer closest to the surface....

  15. Graphitic carbon nitride/graphene oxide/reduced graphene oxide nanocomposites for photoluminescence and photocatalysis

    Energy Technology Data Exchange (ETDEWEB)

    Aleksandrzak, Malgorzata, E-mail: malgorzata.aleksandrzak@o2.pl; Kukulka, Wojciech; Mijowska, Ewa

    2017-03-15

    Highlights: • Graphitic carbon nitride modified with graphene nanostructures. • Influence of graphene nanostructures size in photocatalytic properties of g-C{sub 3}N{sub 4}. • Improved photocatalysis resulted from up-converted photoluminescence. - Abstract: The study presents a modification of graphitic carbon nitride (g-C{sub 3}N{sub 4}) with graphene oxide (GO) and reduced graphene oxide (rGO) and investigation of photoluminescent and photocatalytic properties. The influence of GO and rGO lateral sizes used for the modification was investigated. The nanomaterials were characterized with atomic force microscopy (AFM), transmission electron microscopy (TEM), X-ray diffraction (XRD), Fourier transform infrared spectroscopy (FTIR), diffuse reflectance UV–vis spectroscopy (DR-UV-vis) and photoluminescence spectroscopy (PL). PL revealed that pristine graphitic carbon nitride and its nanocomposites with GO and rGO emitted up-converted photoluminescence (UCPL) which could contribute to the improvement of photocatalytic activity of the materials. The photoactivity was evaluated in a process of phenol decomposition under visible light. A hybrid composed of rGO nanoparticles (rGONPs, 4–135 nm) exhibited the highest photoactivity compared to rGO with size of 150 nm–7.2 μm and graphene oxide with the corresponding sizes. The possible reason of the superior photocatalytic activity is the most enhanced UCPL of rGONPs, contributing to the emission of light with higher energy than the incident light, resulting in improved photogeneration of electron-hole pairs.

  16. Final report. Fabrication of silicon carbide/silicon nitride nanocomposite materials and characterization of their performance; Herstellung von Siliciumcarbid/Siliciumnitrid-Nanocomposite-Werkstoffen und Charakterisierung ihrer Leistungsfaehigkeit. Abschlussbericht

    Energy Technology Data Exchange (ETDEWEB)

    Westerheide, R.; Woetting, G.; Schmitz, H.W.

    1998-07-01

    The presented activities were initiated by the well known publications of Niihara and Ishizaki. There, the strengthening and toughening of silicon nitride by nanoscaled silicon carbide particles are described. Both authors have used expensive powder production routes to achieve the optimum mechanical properties. However, for a commercial purpose these routes are not applicable due to their high cost and low reproducibility. The production route chosen by H.C. Starck together with CFI and the Fraunhofer-Institute is a powder synthesis based on the carbothermal reaction of silicon nitride as a low cost synthesis method. The investigations were performed for materials made from synthesis powders and other reference materials. The materials were densified with relatively high amounts of conventional sintering additives by gas pressure sintering. It is shown, that the postulated maxima of strength and fracture toughness behaviour at room temperature with maxima at about 5% to 25% nanoscaled SiC cannot be achieved. However, the mechanical high temperature material behaviour is as good as the behaviour of highly developed silicon nitride materials, which are produced by HIP or by consequent minimisation of the additive content with the well known difficulties to densify these materials. An overview will be given here on the powder production route and their specific problems, the mechanical properties, the microstructure and the possible effects of the microstructure, which result in an improvement of the creep resistance. (orig.)

  17. A preparation method of thorium nitrides and their oxidation behavior

    International Nuclear Information System (INIS)

    Miyake, M.; Katsura, M.; Uno, M.

    1991-01-01

    In the preparation of ThN, thermal decomposition of Th 3 N 4 has been performed under various conditions and the kind of products has been examined as a function of temperature and time. In the Th-N-O system there exist ThN, Th 3 N 4 , ThO 2 , and Th 2 N 2 O as solid phases. The thermodynamic stability of these solid compounds has been evaluated as a function of P(O 2 ) and P(N 2 ) and compared with the experimental results. One of the main aims in this work is to explore the oxidation behaviour of thorium nitrides. Preliminary oxidation experiments of ThN and Th 3 N 4 gave the same result. From the study of the air oxidation of Th 3 N 4 , it was found that the oxidation product obtained close to room temperature exhibited only one or more diffuse reflections in its diffraction pattern, suggesting that the product may be of a poor crystalline nature. In order to reveal the dependence of the crystallinity of the product on the oxidation temperature, powdered Th 3 N 4 was exposed to air for one week at 0, 50, and 100degC and the product was examined by X-ray diffraction. In order to prepare ThO 2 with a wide variety of degrees of crystallinity, poorly-crystallized ThO 2 , which is produced by the air oxidation of Th 3 N 4 at 50degC, was heat-treated at temperatures ranging from 200 to 1,400degC in air and vacuum. The degree of crystallinity of ThO 2 heat-treated at and below 1000degC is discussed in terms of the number of detected peaks in the X-ray diffraction patterns, and above 1100degC in terms of the Kα doublet resolution of detected peaks. (author). 11 refs., 7 figs., 6 tabs

  18. High temperature oxidation of carbide-carbon materials of NbC-C, NbC-TiC-C systems

    International Nuclear Information System (INIS)

    Afonin, Yu.D.; Shalaginov, V.N.; Beketov, A.R.

    1981-01-01

    The effect of titanium carbide additions on the oxidation of carbide - carbon composition NbC-TiC-C in oxygen under the pressure of 10 mm Hg and in the air at atmospheric pressure in the temperature range 800-1300 deg is studied. It is shown that the region of negative temperature coefficient during oxidation in the system NbC+C is determined by the processes of sintering and polymorphous transformation. The specific character of the oxide film, formed during oxidation of Nbsub(x)Tisub(y)C+C composites is connected with non-equilibrium nature of carbide grain in its composition. Carbon gasification takes place with the formation of carbon dioxide. Composite materials, containing titanium carbide in complex carbide up to 50-83 mol. %, are the most corrosion resisting ones [ru

  19. Gallium nitride on gallium oxide substrate for integrated nonlinear optics

    KAUST Repository

    Awan, Kashif M.; Dolgaleva, Ksenia; Mumthaz Muhammed, Mufasila; Roqan, Iman S.

    2017-01-01

    Gallium Nitride (GaN), being a direct bandgap semiconductor with a wide bandgap and high thermal stability, is attractive for optoelectronic and electronic applications. Furthermore, due to its high optical nonlinearity — the characteristic of all 111-V semiconductors — GaN is also expected to be a suitable candidate for integrated nonlinear photonic circuits for a plethora of apphcations, ranging from on-chip wavelength conversion to quantum computing. Although GaN devices are in commercial production, it still suffers from lack of a suitable substrate material to reduce structural defects like high densities of threading dislocations (TDs), stacking faults, and grain boundaries. These defects significandy deteriorate the optical quality of the epi-grown GaN layer, since they act as non-radiative recombination centers. Recent studies have shown that GaN grown on (−201) β-Gallium Oxide (Ga2O3) has superior optical quality due to a better lattice matching as compared to GaN grown on Sapphire (Al2O3) [1-3]. In this work, we report on the fabrication of GaN waveguides on GaiOj substrate and their optical characterization to assess their feasibihty for efficient four-wave mixing (FWM).

  20. Gallium nitride on gallium oxide substrate for integrated nonlinear optics

    KAUST Repository

    Awan, Kashif M.

    2017-11-22

    Gallium Nitride (GaN), being a direct bandgap semiconductor with a wide bandgap and high thermal stability, is attractive for optoelectronic and electronic applications. Furthermore, due to its high optical nonlinearity — the characteristic of all 111-V semiconductors — GaN is also expected to be a suitable candidate for integrated nonlinear photonic circuits for a plethora of apphcations, ranging from on-chip wavelength conversion to quantum computing. Although GaN devices are in commercial production, it still suffers from lack of a suitable substrate material to reduce structural defects like high densities of threading dislocations (TDs), stacking faults, and grain boundaries. These defects significandy deteriorate the optical quality of the epi-grown GaN layer, since they act as non-radiative recombination centers. Recent studies have shown that GaN grown on (−201) β-Gallium Oxide (Ga2O3) has superior optical quality due to a better lattice matching as compared to GaN grown on Sapphire (Al2O3) [1-3]. In this work, we report on the fabrication of GaN waveguides on GaiOj substrate and their optical characterization to assess their feasibihty for efficient four-wave mixing (FWM).

  1. Boron carbide synthesis by carbothermic reduction of boron oxide

    International Nuclear Information System (INIS)

    Castro, A.R.M. de; Paschoal, J.O.A.

    1988-01-01

    Boron carbide (B 4 C) is a ceramic material of technological applications due to its extreme hardness and high chemical as well as thermal stability. Some parameters of the process for obtaining B 4 C by carbothermic reduction of B 2 O 3 have been determined. The starting powders and the final products have been analysed by chemical, spectrographic and X-ray diffraction methods. The results show that the B 4 C obtained by the carbothermic reduction process is suitable for applications with a definite determination of the free carbon content. (author) [pt

  2. Non-oxidic nanoscale composites: single-crystalline titanium carbide nanocubes in hierarchical porous carbon monoliths.

    Science.gov (United States)

    Sonnenburg, Kirstin; Smarsly, Bernd M; Brezesinski, Torsten

    2009-05-07

    We report the preparation of nanoscale carbon-titanium carbide composites with carbide contents of up to 80 wt%. The synthesis yields single-crystalline TiC nanocubes 20-30 nm in diameter embedded in a hierarchical porous carbon matrix. These composites were generated in the form of cylindrical monoliths but can be produced in various shapes using modern sol-gel and nanocasting methods in conjunction with carbothermal reduction. The monolithic material is characterized by a combination of microscopy, diffraction and physisorption. Overall, the results presented in this work represent a concrete design template for the synthesis of non-oxidic nanoscale composites with high surface areas.

  3. Low temperature high density plasma nitriding of stainless steel molds for stamping of oxide glasses

    Directory of Open Access Journals (Sweden)

    Aizawa Tatsuhiko

    2016-01-01

    Full Text Available Various kinds of stainless steels have been widely utilized as a die for mold- and direct-stamping processes of optical oxide glasses. Since they suffered from high temperature transients and thermal cycles in practice, they must be surface-treated by dry and wet coatings, or, by plasma nitriding. Martensitic stainless steel mold was first wet plated by the nickel phosphate (NiP, which was unstable at the high temperature stamping condition; and, was easy to crystalize or to fracture by itself. This issue of nuisance significantly lowered the productivity in fabrication of optical oxide-glass elements. In the present paper, the stainless steel mold was surface-treated by the low-temperature plasma nitriding. The nitrided layer by this surface modification had higher nitrogen solute content than 4 mass%; the maximum solid-solubility of nitrogen is usually 0.1 mass% in the equilibrium phase diagram. Owing to this solid-solution with high nitrogen concentration, the nitrided layer had high hardness over 1400 HV within its thickness of 50 μm without any formation of nitrides after plasma nitriding at 693 K for 14.4 ks. This plasma-nitrided mold was utilized for mold-stamping of two colored oxide glass plates at 833 K; these plates were successfully deformed and joined into a single glass plate by this stamping without adhesion or galling of oxide glasses onto the nitrided mold surface.

  4. Oxidation of nitride films in aqueous solution: Correlation between surface analysis and electrochemical studies

    International Nuclear Information System (INIS)

    Brown, R.; Alias, M.N.

    1994-01-01

    Ac impedance and dc polarization tests of 304 stainless steels coated by cathodic arc plasma deposition (CAPD) titanium nitride and zirconium nitride were conducted in aqueous chloride solution. Cyclic polarization data suggested passive films were formed over the nitride coatings which are most likely hydrated titanium oxide and zirconium oxides. ESCA analysis of fresh samples and samples exposed during impedance tests indicated a layer rich in oxygen over the ZrN coating after exposure but not over TiN coating. Chemical shifts in the Zr 3d 5/2 core electrons indicate transformation from ZrN to its oxide; the shifts in Ti 2P 3/2 did not support the change from TiN to its oxide. The influence of these shifts on corrosion protection is documented

  5. The solubility of solid fission products in carbides and nitrides of uranium and plutonium: Pt.2. Solubility rules based on lattice parameter differences

    International Nuclear Information System (INIS)

    Benedict, U.

    1977-01-01

    The Relative Lattice Parameter Difference (RLPD) is defined for a solute element with respect to cubic carbides and nitrides of uranium and plutonium as solvents. Rules are given for the relationship between the solubility and the RLPD. NaCl type monocarbides with RLPD's from -10.2% to +7.8% are completely miscible with UC and PuC. NaCl type mononitrides with RLPD's from -7.5% to +8.5% are completely miscible with UN and PuN. The solubility in the sesquicarbides increases with decreasing RPLD and becomes complete in Pu 2 C 3 at RLPD = +4%, and in U 2 C 3 at RLPD approximately +1.5%. Solubilities are predicted on the basis of these rules for the cases where no experimental results are available

  6. A study of nitride formation during the oxidation of titanium-tantalum alloys

    International Nuclear Information System (INIS)

    Hanrahan, R.J. Jr.; Lu, Y.C.; Kung, H.; Butt, D.P.

    1996-01-01

    The oxidation rates of Ti rich titanium-tantalum alloys are significantly lower in air than in oxygen. This nitrogen effect has been shown to be associated with the formation of a nitride layer at or near the scale-metal interface. In the present work the authors used transmission electron microscopy and microdiffraction to identify the nitrides formed on Ti5Ta and Ti40Ta (5 and 40 weight percent Ta alloys) during identical exposures. In both alloys the nitride develops in contact with the oxygen stabilized α-phase in the substrate. In Ti5Ta a continuous layer of TiN forms, while in Ti40Ta a discontinuous layer of Ti 2 N interspersed with Ta 2 O 5 (formed from the Ta rich β-phase) is formed. The nitride layer acts as an oxygen diffusion barrier, reducing the dissolution of oxygen in the substrate

  7. Oxide and nitride TRU-fuels: lessons drawn from the CONFIRM and FUTURE projects of the 5. European framework programme

    International Nuclear Information System (INIS)

    Pillon, S.; Wallenius, J.

    2004-01-01

    The FUTURE and CONFIRM projects address the issue of the design and fabrication of respectively oxide and nitride fuels for the transmutation in accelerator driven system. This paper compares advantages and drawbacks of TRU oxides and nitrides in terms of performance and fabricability. (authors)

  8. Photoluminescence and electrical properties of silicon oxide and silicon nitride superlattices containing silicon nanocrystals

    International Nuclear Information System (INIS)

    Shuleiko, D V; Ilin, A S

    2016-01-01

    Photoluminescence and electrical properties of superlattices with thin (1 to 5 nm) alternating silicon-rich silicon oxide or silicon-rich silicon nitride, and silicon oxide or silicon nitride layers containing silicon nanocrystals prepared by plasma-enhanced chemical vapor deposition with subsequent annealing were investigated. The entirely silicon oxide based superlattices demonstrated photoluminescence peak shift due to quantum confinement effect. Electrical measurements showed the hysteresis effect in the vicinity of zero voltage due to structural features of the superlattices from SiOa 93 /Si 3 N 4 and SiN 0 . 8 /Si 3 N 4 layers. The entirely silicon nitride based samples demonstrated resistive switching effect, comprising an abrupt conductivity change at about 5 to 6 V with current-voltage characteristic hysteresis. The samples also demonstrated efficient photoluminescence with maximum at ∼1.4 eV, due to exiton recombination in silicon nanocrystals. (paper)

  9. Review of the literature for dry reprocessing oxide, metal, and carbide fuel: The AIROX, RAHYD, and CARBOX pyrochemical processes

    Energy Technology Data Exchange (ETDEWEB)

    Hoyt, R.C.; Rhee, B.W. [Rockwell International Corp., Canoga Park, CA (United States). Energy Systems Group

    1979-09-30

    The state of the art of dry processing oxide, carbide, and metal fuel has been determined through an extensive literature review. Dry processing in one of the most proliferation resistant fuel reprocessing technologies available to date, and is one of the few which can be exported to other countries. Feasibility has been established for oxide, carbide, and metal fuel on a laboratory scale, and large-scale experiments on oxide and carbide fuel have shown viability of the dry processing concept. A complete dry processing cycle has been demonstrated by multicycle processing-refabrication-reirradiation experiments on oxide fuel. Additional experimental work is necessary to: (1) demonstrate the complete fuel cycle for carbide and metal fuel, (2) optimize dry processing conditions, and (3) establish fission product behavior. Dry process waste management is easier than for an aqueous processing facility since wastes are primarily solids and gases. Waste treatment can be accomplished by techniques which have been, or are being, developed for aqueous plants.

  10. Improved reaction sintered silicon nitride. [protective coatings to improve oxidation resistance

    Science.gov (United States)

    Baumgartner, H. R.

    1978-01-01

    Processing treatments were applied to as-nitrided reaction sintered silicon nitride (RSSN) with the purposes of improving strength after processing to above 350 MN/m2 and improving strength after oxidation exposure. The experimental approaches are divided into three broad classifications: sintering of surface-applied powders; impregnation of solution followed by further thermal processing; and infiltration of molten silicon and subsequent carburization or nitridation of the silicon. The impregnation of RSSN with solutions of aluminum nitrate and zirconyl chloride, followed by heating at 1400-1500 C in a nitrogen atmosphere containing silicon monoxide, improved RSSN strength and oxidation resistance. The room temperature bend strength of RSSN was increased nearly fifty percent above the untreated strength with mean absolute strengths up to 420 MN/m2. Strengths of treated samples that were measured after a 12 hour oxidation exposure in air were up to 90 percent of the original as-nitrided strength, as compared to retained strengths in the range of 35 to 60 percent for untreated RSSN after the same oxidation exposure.

  11. Polymeric carbon nitride nanomesh as an efficient and durable metal-free catalyst for oxidative desulfurization.

    Science.gov (United States)

    Shen, Lijuan; Lei, Ganchang; Fang, Yuanxing; Cao, Yanning; Wang, Xinchen; Jiang, Lilong

    2018-03-06

    We report the first use of polymeric carbon nitride (CN) for the catalytic selective oxidation of H 2 S. The as-prepared CN with unique ultrathin "nanomeshes" structure exhibits excellent H 2 S conversion and high S selectivity. In particular, the CN nanomesh also displays better durability in the desulfurization reaction than traditional catalysts, such as carbon- and iron-based materials.

  12. Nano-ridge fabrication by local oxidation of silicon edges with silicon nitride as a mask

    NARCIS (Netherlands)

    Haneveld, J.; Berenschot, Johan W.; Maury, P.A.; Jansen, Henricus V.

    2005-01-01

    A method to fabricate nano-ridges over a full wafer is presented. The fabrication method uses local oxidation of silicon, with silicon nitride as a mask, and wet anisotropic etching of silicon. The realized structures are 7-20 nm wide, 40-100 nm high and centimeters long. All dimensions are easily

  13. Silicon oxide nanoimprint stamp fabrication by edge lithography reinforced with silicon nitride

    NARCIS (Netherlands)

    Zhao, Yiping; Berenschot, Johan W.; de Boer, Meint J.; Jansen, Henricus V.; Tas, Niels Roelof; Huskens, Jurriaan; Elwenspoek, Michael Curt

    2007-01-01

    The fabrication of silicon oxide nanoimprint stamp employing edge lithography in combination with silicon nitride deposition is presented. The fabrication process is based on conventional photolithography an weg etching methods. Nanoridges with width dimension of sub-20 nm were fabricated by edge

  14. Irradiation behaviour of mixed uranium-plutonium carbides, nitrides and carbonitrides; Comportement a l'irradiation de carbures, nitrures et carbonitrures mixtes d'uranium et de plutonium

    Energy Technology Data Exchange (ETDEWEB)

    Mikailoff, H; Mustelier, J P; Bloch, J; Leclere, J; Hayet, L [Commissariat a l' Energie Atomique, Fontenay-aux-Roses (France). Centre d' Etudes Nucleaires

    1967-07-01

    In the framework of the research program of fast reactor fuels two irradiation experiments have been carried out on mixed uranium-plutonium carbides, nitrides and carbo-nitrides. In the first experiment carried out with thermal neutrons, the fuel consisted of sintered pellets sheathed in a stainless steel can with a small gap filled with helium. There were three mixed mono-carbide samples and the maximum linear power was 715 W/cm. After a burn-up slightly lower than 20000 MW day/tonne, a swelling of the fuel which had ruptured the cans was observed. In the second experiment carried out in the BR2 reactor with epithermal neutrons, the samples consisted of sintered pellets sodium bonded in a stainless steel tube. There were three samples containing different fuels and the linear power varies between 1130 and 1820 W/cm. Post-irradiation examination after a maximal burn-up of 1550 MW day/tonne showed that the behaviour of the three fuel elements was satisfactory. (authors) [French] Dans le cadre du programme d'etude des conibustiles pour reacteurs rapides, on a realise deux experiences d'irradiation de carbures, nitrures et carbonitrures mixtes d'uranium et de plutonium. Dans la premiere experience, faite en neutrons thermiques, le combustible etait constitue de,pastilles frittees gainees dans un tube d'acier inoxydable avec un faible jeu rempli d'helium. Il y avait trois echantillons de monocarbures mixtes, et la puissance lineaire maximale etait de 715 W/cm. Apres un taux de combustion legerement inferieur a 20 000 MWj/t, on a observe un gonflement des combustible qui a provoque, la rupture des gaines. Pans la seconde experience, realisee dans le reacteur BR2 en neutrons epithermiques, les echantillons etaient constitues de pastilles frittees gainees dans un tube d'acier avec un joint sodium. Il y avait trois echantillons contenant des combustibles differents, et la puissance lineaire variait de 1130 a 1820 W/cm. Les examens apres irradiation a un taux maximal de

  15. Empirical study of the metal-nitride-oxide-semiconductor device characteristics deduced from a microscopic model of memory traps

    International Nuclear Information System (INIS)

    Ngai, K.L.; Hsia, Y.

    1982-01-01

    A graded-nitride gate dielectric metal-nitride-oxide-semiconductor (MNOS) memory transistor exhibiting superior device characteristics is presented and analyzed based on a qualitative microscopic model of the memory traps. The model is further reviewed to interpret some generic properties of the MNOS memory transistors including memory window, erase-write speed, and the retention-endurance characteristic features

  16. Iron carbide on titania surface modified with group VA oxides as Fischer-Tropsch catalysts

    International Nuclear Information System (INIS)

    Wachs, I.E.; Fiato, R.A.; Chersich, C.C.

    1986-01-01

    A catalyst is described comprising iron carbide supported on a surface modified titania wherein the support comprises an oxide of a metal selected form the group consisting of niobium, vanadium, tantalum or mixture thereof supported on the titania wherein at least a portion of the supported oxide of niobium, vanandium, tantalum or mixture is in a non-crystalline form. The amount of the supported oxide ranges from about 0.5 to 25 weight percent metal oxide on the titania support based on the total support composition and the catalyst contains at least about 2 milligrams of iron, calculated as Fe/sub 2/O/sub 3/, per square meter of support surface

  17. Surface Preparation and Deposited Gate Oxides for Gallium Nitride Based Metal Oxide Semiconductor Devices

    Directory of Open Access Journals (Sweden)

    Paul C. McIntyre

    2012-07-01

    Full Text Available The literature on polar Gallium Nitride (GaN surfaces, surface treatments and gate dielectrics relevant to metal oxide semiconductor devices is reviewed. The significance of the GaN growth technique and growth parameters on the properties of GaN epilayers, the ability to modify GaN surface properties using in situ and ex situ processes and progress on the understanding and performance of GaN metal oxide semiconductor (MOS devices are presented and discussed. Although a reasonably consistent picture is emerging from focused studies on issues covered in each of these topics, future research can achieve a better understanding of the critical oxide-semiconductor interface by probing the connections between these topics. The challenges in analyzing defect concentrations and energies in GaN MOS gate stacks are discussed. Promising gate dielectric deposition techniques such as atomic layer deposition, which is already accepted by the semiconductor industry for silicon CMOS device fabrication, coupled with more advanced physical and electrical characterization methods will likely accelerate the pace of learning required to develop future GaN-based MOS technology.

  18. Point defects and oxidation mechanism in cubic boron nitride

    International Nuclear Information System (INIS)

    Gorshin, A.P.; Shvajko-Shvajkovskij, V.E.

    1994-01-01

    A theoretical analysis of the defect formation in boron nitride by the Schottky mechanism within the framework of the quasi-chemical approximation method is carried out. On the base of solution of the disordering equations at different conditions of electroneutrality are obtained the dependences of defect concentrations in β-BN on the partial nitrogen pressure in equilibrium conditions. Experimental checking of the theoretical analysis proposed confirms the hypothesis on the presence of defects of nonstoichiometric origin in the β-BN anion sublattice

  19. Joining technique of silicon nitride and silicon carbide in a mixture and/or in contact with high-melting metals and alloys

    International Nuclear Information System (INIS)

    Mueller-Zell, A.

    1980-01-01

    The following work gives a survey on possible joining techniques of silicon nitride (Si 3 N 4 ) and silicon carbide (SiC) in a mixture and/or in contact with high-melting metals and alloys. The problem arose because special ceramic materials such as Si 3 N 4 and SiC are to be used in gas turbines. The special ceramics in use may unavoidably come into contact with metals or the one hand, or form intended composite systems with them on the other hand, like e.g. the joining of a Si 3 N 4 disc with a metallic drive axis or ceramic blades with a metal wheel. The mixed body of X% ceramic (Si 3 N 4 , SiC) and Y% metal powder were prepared depending on the material combination at 1200 0 C-1750 0 C by hot-pressing or at 1200 0 C-2050 0 C by hot-pressing or pressureless sintering. The following possible ways were chosen as interlaminar bonding ceramic/metal/ceramic: on the one hand pressure welding (composite hot pressing) and the solid-state bonding in direct contact and by means of artificially included transition mixed layers, as well as material intermediate layers between metal and ceramic and on the other hand, soldering with active solder with molten phase. (orig./RW) [de

  20. M23C6 carbides and Cr2N nitrides in aged duplex stainless steel: A SEM, TEM and FIB tomography investigation.

    Science.gov (United States)

    Maetz, J-Y; Douillard, T; Cazottes, S; Verdu, C; Kléber, X

    2016-05-01

    The precipitation evolution during ageing of a 2101 lean duplex stainless steel was investigated, revealing that the precipitate type and morphology depends on the nature of the grain boundary. Triangular M23C6 carbides precipitate only at γ/δ interfaces and rod-like Cr2N nitrides precipitate at both γ/δ and δ/δ interfaces. After 15min of ageing, the M23C6 size no longer evolves, whereas that of the Cr2N continues to evolve. For Cr2N, the morphology is maintained at γ/δ interfaces, whereas percolation occurs to form a continuous layer at δ/δ interfaces. By combining 2D and 3D characterisation at the nanoscale using transmission electron microscopy (TEM) and focused ion beam (FIB) tomography, a complete description of the precipitation evolution was obtained, including the composition, crystallographic structure, orientation relationship with the matrix phases, location, morphology, size and volume fraction. Copyright © 2016 Elsevier Ltd. All rights reserved.

  1. Corrosion behaviors and contact resistances of the low-carbon steel bipolar plate with a chromized coating containing carbides and nitrides

    Energy Technology Data Exchange (ETDEWEB)

    Bai, Ching-Yuan; Ger, Ming-Der [Department of Applied Chemistry and Materials Science, Chung Cheng Institute of Technology, National Defense University, Ta-His, Tao-Yuan, 335 (China); Wu, Min-Sheng [Department of Weapon System Engineering, Chung Cheng Institute of Technology, National Defense University, Ta-His, Tao-Yuan, 335 (China)

    2009-08-15

    This work improved the surface performance of low-carbon steel AISI 1020 by a reforming pack chromization process at low temperature (700 C) and investigated the possibility that the modified steels are used as metal bipolar plates (BPP) of PEMFCs. The steel surface was activated by electrical discharge machining (EDM) with different currents before the chromizing procedure. Experimental results indicate that a dense and homogenous Cr-rich layer is formed on the EDM carbon steels by pack chromization. The chromized coating pretreated with electrical discharge currents of 2 A has the lowest corrosion current density, 5.78 x 10{sup -8} Acm{sup -2}, evaluated by potentiodynamic polarization in a 0.5 M H{sub 2}SO{sub 4} solution and the smallest interfacial contact resistance (ICR), 11.8 m{omega}-cm{sup 2}, at 140 N/cm{sup 2}. The carbon steel with a coating containing carbides and nitrides is promising for application as metal BPPs, and this report presents the first research in producing BPPs with carbon steels. (author)

  2. Analytical and experimental evaluation of joining silicon nitride to metal and silicon carbide to metal for advanced heat engine applications. Final report

    Energy Technology Data Exchange (ETDEWEB)

    Kang, S.; Selverian, J.H.; O`Neil, D.; Kim, H. [GTE Labs., Inc., Waltham, MA (US); Kim, K. [Brown Univ., Providence, RI (US). Div. of Engineering

    1993-05-01

    This report summarizes the results of Phase 2 of Analytical and Experimental Evaluation of Joining Silicon Nitride to Metal and Silicon Carbide to Metal for Advanced Heat Engine Applications. A general methodology was developed to optimize the joint geometry and material systems for 650{degrees}C applications. Failure criteria were derived to predict the fracture of the braze and ceramic. Extensive finite element analyses (FEA) were performed to examine various joint geometries and to evaluate the affect of different interlayers on the residual stress state. Also, material systems composed of coating materials, interlayers, and braze alloys were developed for the program based on the chemical stability and strength of the joints during processing, and service. The FEA results were compared with experiments using two methods: (1) an idealized strength relationship of the ceramic, and (2) a probabilistic analysis of the ceramic strength (NASA CARES). The results showed that the measured strength of the joint reached 30--80% of the strength predicted by FEA. Also, potential high-temperature braze alloys were developed and evaluated for the high-temperature application of ceramic-metal joints. 38 tabs, 29 figs, 20 refs.

  3. Thermal-hydraulics and neutronics studies on the FP7 CP-ESFR oxide and carbide cores

    Energy Technology Data Exchange (ETDEWEB)

    Ammirabile, L.; Tsige-Tamirat, H. [European Commission, JRC, Inst. for Energy, Petten (Netherlands)

    2011-07-01

    In the framework of the the Collaborative Project on European Sodium Fast Reactor (CP-ESFR) two core designs that are currently being proposed for the 3600 MWth sodium-cooled reactor concept: one is based on oxide fuel and the other on carbide fuel. Using the European Safety Assessment Platform (ESAP), JRC-IE has conducted static calculation on neutronics (incl. reactivity coefficients) and thermal-hydraulic characteristics for both oxide and carbide reference cores. The quantities evaluated include: keff, coolant heat-up, void, and Doppler reactivity coefficients, axial and radial expansion reactivity coefficients, pin-by-pin calculated power profiles, average and peak channel temperatures. This paper presents the ESAP models applied in the study together with the relevant results for the oxide and carbide core. (author)

  4. Thermal-hydraulics and neutronics studies on the FP7 CP-ESFR oxide and carbide cores

    International Nuclear Information System (INIS)

    Ammirabile, L.; Tsige-Tamirat, H.

    2011-01-01

    In the framework of the the Collaborative Project on European Sodium Fast Reactor (CP-ESFR) two core designs that are currently being proposed for the 3600 MWth sodium-cooled reactor concept: one is based on oxide fuel and the other on carbide fuel. Using the European Safety Assessment Platform (ESAP), JRC-IE has conducted static calculation on neutronics (incl. reactivity coefficients) and thermal-hydraulic characteristics for both oxide and carbide reference cores. The quantities evaluated include: keff, coolant heat-up, void, and Doppler reactivity coefficients, axial and radial expansion reactivity coefficients, pin-by-pin calculated power profiles, average and peak channel temperatures. This paper presents the ESAP models applied in the study together with the relevant results for the oxide and carbide core. (author)

  5. Graphitic carbon nitride nanosheets doped graphene oxide for electrochemical simultaneous determination of ascorbic acid, dopamine and uric acid

    International Nuclear Information System (INIS)

    Zhang, Hanqiang; Huang, Qitong; Huang, Yihong; Li, Feiming; Zhang, Wuxiang; Wei, Chan; Chen, Jianhua; Dai, Pingwang; Huang, Lizhang; Huang, Zhouyi; Kang, Lianping; Hu, Shirong; Hao, Aiyou

    2014-01-01

    Graphical abstract: Schematic drawing of electrochemical oxidize AA, DA and UA on graphitic carbon nitride nanosheets-graphene oxide composite modified electrode. - Highlights: • Synthesize g-C 3 N 4 , GO and CNNS-GO composite. • CNNS-GO composite was the first time for simultaneous determination of AA, DA and UA. • CNNS-GO/GCE displays fantastic selectivity and sensitivity for AA, DA and UA. • CNNS-GO/GCE was applied to detect real sample with satisfactory results. - Abstract: Graphitic carbon nitride nanosheets with a graphite-like structure have strong covalent bonds between carbon and nitride atoms, and nitrogen atoms in the carbon architecture can accelerate the electron transfer and enhance electrical properties effectually. The graphitic carbon nitride nanosheets-graphene oxide composite was synthesized. And the electrochemical performance of the composite was investigated by cyclic voltammetry and differential pulse voltammetry ulteriorly. Due to the synergistic effects of layer-by-layer structures by π-π stacking or charge-transfer interactions, graphitic carbon nitride nanosheets-graphene oxide composite can improved conductivity, electro-catalytic and selective oxidation performance. The proposed graphitic carbon nitride nanosheets-graphene oxide composite modified electrode was employed for simultaneous determination of ascorbic acid, dopamine and uric acid in their mixture solution, it exhibited distinguished sensitivity, wide linear range and low detection limit. Moreover, the modified electrode was applied to detect urine and dopamine injection sample, and then the samples were spiked with certain concentration of three substances with satisfactory recovery results

  6. Oxide, interface, and border traps in thermal, N2O, and N2O-nitrided oxides

    International Nuclear Information System (INIS)

    Fleetwood, D.M.; Saks, N.S.

    1996-01-01

    We have combined thermally stimulated-current (TSC) and capacitance endash voltage (C endash V) measurements to estimate oxide, interface, and effective border trap densities in 6 endash 23 nm thermal, N 2 O, and N 2 O-nitrided oxides exposed to ionizing radiation or high-field electron injection. Defect densities depend strongly on oxide processing, but radiation exposure and moderate high-field stress lead to similar trapped hole peak thermal energy distributions (between ∼1.7 and ∼2.0 eV) for all processes. This suggests that similar defects dominate the oxide charge trapping properties in these devices. Radiation-induced hole and interface trap generation efficiencies (0.1%endash 1%) in the best N 2 O and N 2 O-nitrided oxides are comparable to the best radiation hardened oxides in the literature. After ∼10 Mrad(SiO 2 ) x-ray irradiation or ∼10 mC/cm 2 constant current Fowler endash Nordheim injection, effective border trap densities as high as ∼5x10 11 cm -2 are inferred from C endash V hysteresis. These measurements suggest irradiation and high-field stress cause similar border trap energy distributions. In each case, even higher densities of compensating trapped electrons in the oxides (up to 2x10 12 cm -2 ) are inferred from combined TSC and C endash V measurements. These trapped electrons prevent conventional C endash V methods from providing accurate estimates of the total oxide trap charge density in many irradiation or high-field stress studies. Fewer compensating electrons per trapped hole (∼26%±5%) are found for irradiation of N 2 O and N 2 O-nitrided oxides than for thermal oxides (∼46%±7%). (Abstract Truncated)

  7. Low Working-Temperature Acetone Vapor Sensor Based on Zinc Nitride and Oxide Hybrid Composites.

    Science.gov (United States)

    Qu, Fengdong; Yuan, Yao; Guarecuco, Rohiverth; Yang, Minghui

    2016-06-01

    Transition-metal nitride and oxide composites are a significant class of emerging materials that have attracted great interest for their potential in combining the advantages of nitrides and oxides. Here, a novel class of gas sensing materials based on hybrid Zn3 N2 and ZnO composites is presented. The Zn3 N2 /ZnO (ZnNO) composites-based sensor exhibits selectivity and high sensitivity toward acetone vapor, and the sensitivity is dependent on the nitrogen content of the composites. The ZnNO-11.7 described herein possesses a low working temperature of 200 °C. The detection limit (0.07 ppm) is below the diabetes diagnosis threshold (1.8 ppm). In addition, the sensor shows high reproducibility and long-term stability. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  8. One-pot synthesis of reduced graphene oxide@boron nitride nanosheet hybrids with enhanced oxidation-resistant properties

    Science.gov (United States)

    Sun, Guoxun; Bi, Jianqiang; Wang, Weili; Zhang, Jingde

    2017-12-01

    Reduced graphene oxide@boron nitride nanosheet (RGO@BNNS) hybrids were prepared for the first time using template-assisted autoclave pyrolysis technique at the temperature as low as 600 °C. The developed method can be scaled into gram-scale synthesis of the material. The BNNSs combine with RGO through van der Waals interplanar interaction without damaging the structures of RGO. Such ultrathin BNNSs on the surface of RGO can serve as high-performance oxidation-resistant coatings in oxidizing atmospheres at high temperatures. The RGO@BNNS hybrids can sustain up to 800 °C over a relatively long period of time.

  9. Mocvd Growth of Group-III Nitrides on Silicon Carbide: From Thin Films to Atomically Thin Layers

    Science.gov (United States)

    Al Balushi, Zakaria Y.

    Group-III nitride semiconductors (AlN, GaN, InN and their alloys) are considered one of the most important class of materials for electronic and optoelectronic devices. This is not limited to the blue light-emitting diode (LED) used for efficient solid-state lighting, but other applications as well, such as solar cells, radar and a variety of high frequency power electronics, which are all prime examples of the technological importance of nitride based wide bandgap semiconductors in our daily lives. The goal of this dissertation work was to explore and establish new growth schemes to improve the structural and optical properties of thick to atomically thin films of group-III nitrides grown by metalorganic chemical vapor deposition (MOCVD) on SiC substrates for future novel devices. The first research focus of this dissertation was on the growth of indium gallium nitride (InGaN). This wide bandgap semiconductor has attracted much research attention as an active layer in LEDs and recently as an absorber material for solar cells. InGaN has superior material properties for solar cells due to its wavelength absorption tunability that nearly covers the entire solar spectrum. This can be achieved by controlling the indium content in thick grown material. Thick InGaN films are also of interest as strain reducing based layers for deep-green and red light emitters. The growth of thick films of InGaN is, however, hindered by several combined problems. This includes poor incorporation of indium in alloys, high density of structural and morphological defects, as well as challenges associated with the segregation of indium in thick films. Overcoming some of these material challenges is essential in order integrate thick InGaN films into future optoelectronics. Therefore, this dissertation research investigated the growth mechanism of InGaN layers grown in the N-polar direction by MOCVD as a route to improve the structural and optical properties of thick InGaN films. The growth

  10. Towards a high performing UV-A sensor based on Silicon Carbide and hydrogenated Silicon Nitride absorbing layers

    International Nuclear Information System (INIS)

    Mazzillo, M.; Renna, L.; Costa, N.; Badalà, P.; Sciuto, A.; Mannino, G.

    2016-01-01

    Exposure to ultraviolet (UV) radiation is a major risk factor for most skin cancers. The sun is our primary natural source of UV radiation. The strength of the sun's ultraviolet radiation is expressed as Solar UV Index (UVI). UV-A (320–400 nm) and UV-B (290–320 nm) rays mostly contribute to UVI. UV-B is typically the most destructive form of UV radiation because it has enough energy to cause photochemical damage to cellular DNA. Also overexposure to UV-A rays, although these are less energetic than UV-B photons, has been associated with toughening of the skin, suppression of the immune system, and cataract formation. The use of preventive measures to decrease sunlight UV radiation absorption is fundamental to reduce acute and irreversible health diseases to skin, eyes and immune system. In this perspective UV sensors able to monitor in a monolithic and compact chip the UV Index and relative UV-A and UV-B components of solar spectrum can play a relevant role for prevention, especially in view of the integration of these detectors in close at hand portable devices. Here we present the preliminary results obtained on our UV-A sensor technology based on the use of hydrogenated Silicon Nitride (SiN:H) thin passivating layers deposited on the surface of thin continuous metal film Ni 2 Si/4H-SiC Schottky detectors, already used for UV-Index monitoring. The first UV-A detector prototypes exhibit a very low leakage current density of about 0.2 pA/mm 2 and a peak responsivity value of 0.027 A/W at 330 nm, both measured at 0V bias.

  11. Tribological behavior of DLC films deposited on nitrided and post-oxidized stainless steel by PACVD

    Science.gov (United States)

    Dalibon, E. L.; Brühl, S. P.; Heim, D.

    2012-06-01

    In this work, the tribological behavior and adhesion of DLC films deposited by PACVD on AISI 420 martensitic stainless steel was evaluated. Prior to DLC deposition, the samples were nitrided and some of them also post-oxidized. The films were characterized by Raman and EDS, microhardness was assessed with Vickers indenter and the microstructure was analyzed by OM, SEM, FIB. Fretting and linear reciprocating sliding tests were performed using a WC ball as counterpart, and the adhesion of the DLC films was characterized using the Scratch Test and Rockwell C indentation. Corrosion behavior was evaluated by the Salt Spray Fog Test. The film showed a hardness of only about 1500 HV but it was about 15-20 microns thick. The results of the mechanical tests showed that pre-treatments (nitriding and oxidizing) of the substrate did not have a big influence in the tribological behavior of the coating. However, the nitriding treatment before the DLC coating process reduced the interface stress and enhanced the adhesion. Additionally, all the films evidenced good corrosion resistance in a saline environment, better than the AISI 420 itself.

  12. Laser cladding in-situ carbide particle reinforced Fe-based composite coatings with rare earth oxide addition

    Institute of Scientific and Technical Information of China (English)

    吴朝锋; 马明星; 刘文今; 钟敏霖; 张红军; 张伟明

    2009-01-01

    Particulate reinforced metal matrix composite(PR-MMC) has excellent properties such as good wear resistance,corrosion resistance and high temperature properties.Laser cladding is usually used to form PR-MMC on metal surface with various volume fractions of ceramic particles.Recent literatures showed that laser melting of powder mixture containing carbon and carbide-forming elements,was favorable for the formation of in-situ synthesized carbide particles.In this paper,rare earth oxide(RE2O3) was added into t...

  13. Oxidation of vanadium carbide in air; Oxidacion de carburo de vanadio en aire

    Energy Technology Data Exchange (ETDEWEB)

    Ruiz, A.; Troiani, L.; Materan, E. [Universidad Simon Bolivar, Depto. de la Ciencia de los Materiales, Grupo de Ingenieria de Superficies e Interfaces, Caracas, Venezuela, (Venezuela)

    1998-12-31

    It was studied the samples oxidation of vanadium carbide (V{sub 8}C{sub 7}), synterized and in powder, in order to know the temperature influence and the aggregation state in the kinetics and the oxidation products. The assays were realized in static air, at temperature between 600 y 750 Centigrade, between 6 and 24 hours periods. The gaseous products were analyzed through gas chromatography while the condensates ones were analyzed through optical microscopy and scanning electron microscopy, X-ray diffraction and chemical analysis by X-ray fluorescence analysis. It was found that in the V{sub 8}C{sub 7} oxidation occurs two basic processes: the gaseous oxides production which results of the carbon oxidation, fundamentally CO{sub 2}, and the vanadium condensate oxides production, fundamentally V{sub 2}O{sub 5}. In the synterized samples assayed under 650 Centigrade, the kinetics is lineal with loss of mass, suggesting a control by the formation of gaseous products in the sample surface, while in the synterized samples assayed over 650 Centigrade, it occurs a neat gain of mass, which is attributed to vanadium pentoxide fusion. These processes produce stratified layers of V{sub 2}O{sub 5} although at higher temperatures also it was detected V{sub 2}O{sub 4}. The superficial area effect is revealed in what the powder samples always experiment a mass neat increase in all essay temperatures, being the condensate oxidation products, fundamentally V{sub 2}O{sub 5} and V{sub 6}O{sub 13}. (Author)

  14. A new quantitative analysis on nitriding kinetics in the oxidized Zry-4 at 900-1200 .deg. C

    Energy Technology Data Exchange (ETDEWEB)

    Park, Sanggi [ACT Co. Ltd., Daejeon (Korea, Republic of)

    2016-10-15

    Two major roles of nitrogen on the zirconium based cladding degradation were identified: mechanical degradation of the cladding, and the additional chemical heat release. It has long been known that accelerated oxidation can occur in air due to the nitrogen. In addition, significant uptake of nitrogen can also occur. The nitriding of pre-oxidized zirconium based alloys leads to micro porous and less coherent oxide scales. This paper aims to quantitatively investigate the nitriding mechanism and kinetics by proposing a new methodology that is coupled with the mass balance analysis and the optical microscope image processing analysis. A new quantitative analysis methodology is described in chapter 2 and the investigation of the nitriding kinetics is performed in chapter 3. The experimental details are previously reported in. Previously only qualitative analysis was performed in, and hence the quantitative analysis will be performed in this paper. In this paper, the nitriding kinetics and mechanism were quantitatively analyzed by the new proposed analysis methods: the mass balance analysis and the optical microscope image processing analysis. Using these combined methods, the mass gain curves and the optical microscopes are analyzed in very detail, and the mechanisms of nitriding accelerated, stabilized and saturated behaviors were well understood. This paper has two very distinctive achievements as follows: 1) Development of very effective quantitative analysis methods only using two main results of oxidation tests: No detailed analytical sample measurements (e.g. TEM, EPMA and so on.) were required. These methods can effectively reduce the cost and effort of the post-test investigation. 2) The first identification of the nitriding behaviors and its very accurate analysis in a quantitative way. Based on this quantitative analysis results on the nitriding kinetics, these new findings will contribute significantly the understanding the air oxidation behaviors and model

  15. Investigation of thermal conductivity and oxidation behaviour of reaction bonded aluminum nitride (RBAN) ceramics

    International Nuclear Information System (INIS)

    Salahi, E; Moztarzadeh, F.; Margoosian, V.; Heinrich, J. G.

    2003-01-01

    AlN samples have been produced by reaction bonding process using AlN and aluminum powders as starting materials. Different aluminum nitride and aluminum powders ratios were mixed in ethanol media, dried, isostatically and nitrided in (N 2 )atmosphere. Results showed that conversion of to AlN depends strongly on the amount of aluminum starting powder and decreased with increasing after a maximum at 25 Al wt %. Changing the particle size and morphology of the aluminum starting powder leads to change in the conversion ratio and microstructure of RBAN ceramics. Typical scanning electron micrographs of RBAN sample indicating primary and secondary aluminum nitride morphology and pore structure. The oxidation behavior of RABN samples showed the weight gain depends on the average particle size, morphology and amount of Al in starting mixture and pore structure. Samples have been manufactured with equi-axed morphology of Al starting powder have thermal conductivity higher than the samples have been manufactured with flake-like morphology. These differences were directly related to the different microstructure of RBAN samples

  16. Oxidation kinetics of zirconium nitride. I. Planar symmetry

    International Nuclear Information System (INIS)

    Desmaison, Jean; Billy, Michel

    1976-01-01

    The oxidation behavior of ZrNsub(0.93) plates was investigated at temperatures in the range 625-800 deg C in oxygen over the pressure range 10-730 torr. The reaction product consists of monoclinic zirconia accompanied with trace amounts of cubic or tetragonal zirconia. Although the kinetic results are well interpreted by a Prout and Tompkins type model. The morphological observations suggest a transformation governed by a phase boundary reaction, this being confirmed by the oxygen pressure dependence on the rate law [fr

  17. Origin of high oxide to nitride polishing selectivity of ceria-based slurry in the presence of picolinic acid

    International Nuclear Information System (INIS)

    Wang Liang-Yong; Liu Bo; Song Zhi-Tang; Liu Wei-Li; Feng Song-Lin; David Huang; Babu, S.V

    2011-01-01

    We report on the investigation of the origin of high oxide to nitride polishing selectivity of ceria-based slurry in the presence of picolinic acid. The oxide to nitride removal selectivity of the ceria slurry with picolinic acid is as high as 76.6 in the chemical mechanical polishing. By using zeta potential analyzer, particle size analyzer, horizon profilometer, thermogravimetric analysis and Fourier transform infrared spectroscopy, the pre- and the post-polished wafer surfaces as well as the pre- and the post-used ceria-based slurries are compared. Possible mechanism of high oxide to nitride selectivity with using ceria-based slurry with picolinic acid is discussed. (interdisciplinary physics and related areas of science and technology)

  18. Origin of high oxide to nitride polishing selectivity of ceria-based slurry in the presence of picolinic acid

    Institute of Scientific and Technical Information of China (English)

    Wang Liang-Yong; Liu Bo; Song Zhi-Tang; Liu Wei-Li; Feng Song-Lin; David Huang; S.V Babu

    2011-01-01

    We report on the investigation of the origin of high oxide to nitride polishing selectivity of ceria-based slurry in the presence of picolinic acid. The oxide to nitride removal selectivity of the ceria slurry with picolinic acid is as high as 76.6 in the chemical mechanical polishing. By using zeta potential analyzer, particle size analyzer, horizon profilometer, thermogravimetric analysis and Fourier transform infrared spectroscopy, the pre-and the post-polished wafer surfaces as well as the pre-and the post-used ceria-based slurries are compared. Possible mechanism of high oxide to nitride selectivity with using ceria-based slurry with picolinic acid is discussed.

  19. Demonstration of slot-waveguide structures on silicon nitride / silicon oxide platform.

    Science.gov (United States)

    Barrios, C A; Sánchez, B; Gylfason, K B; Griol, A; Sohlström, H; Holgado, M; Casquel, R

    2007-05-28

    We report on the first demonstration of guiding light in vertical slot-waveguides on silicon nitride/silicon oxide material system. Integrated ring resonators and Fabry-Perot cavities have been fabricated and characterized in order to determine optical features of the slot-waveguides. Group index behavior evidences guiding and confinement in the low-index slot region at O-band (1260-1370nm) telecommunication wavelengths. Propagation losses of <20 dB/cm have been measured for the transverse-electric mode of the slot-waveguides.

  20. Nitride Coating Effect on Oxidation Behavior of Centrifugally Atomized U-Mo Fuel

    Energy Technology Data Exchange (ETDEWEB)

    Jeong, Yong Jin; Cho, Woo Hyoung; Park, Jong Man; Lee, Yoon Sang; Yang, Jae Ho [Korea Atomic Energy Research Institute, Daejeon (Korea, Republic of)

    2011-10-15

    Uranium metal and uranium compounds are being used as nuclear fuel materials and generally known as pyrophoric materials. Nowadays the importance of nuclear fuel about safety is being emphasized due to the vigorous exchanges and co-operations among the international community. According to the reduced enrichment for research and test reactors (RERTR) program, the international research reactor community has decided to use low-enriched uranium instead of high-enriched uranium. As a part of the RERTR program, KAERI has developed centrifugally atomized U-Mo alloys as a promising candidate of research reactor fuel. Kang et al. studied the oxidation behavior of centrifugally atomized U-10wt% Mo alloy and it showed better oxidation resistance than uranium. In this study, the oxidation behavior of nitride coated U-7wt% Mo alloy is investigated to enhance the safety against pyrophoricity

  1. Nickel Oxide and Nickel Co-doped Graphitic Carbon Nitride Nanocomposites and its Octylphenol Sensing Application

    KAUST Repository

    Gong, Wanyun

    2015-11-16

    Nickel oxide and nickel co-doped graphitic carbon nitride (NiO-Ni-GCN) nanocomposites were successfully prepared by thermal treatment of melamine and NiCl2 6H2O. NiO-Ni-GCN nanocomposites showed superior electrochemical catalytic activity for the oxidation of octylphenol to pure GCN. A detection method of octylphenol in environmental water samples was developed based at NiO-Ni-GCN nanocomposites modified electrode under infrared light irradiation. Differential pulse voltammetry was used as the analytic technique of octylphenol, exhibiting stable and specific concentration-dependent oxidation signal in the presence of octylphenol in the range of 10nM to 1μM and 1μM to 50μM, with a detection limit of 3.3nM (3S/N). © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  2. Nickel Oxide and Nickel Co-doped Graphitic Carbon Nitride Nanocomposites and its Octylphenol Sensing Application

    KAUST Repository

    Gong, Wanyun; Zou, Jing; Zhang, Sheng; Zhou, Xin; Jiang, Jizhou

    2015-01-01

    Nickel oxide and nickel co-doped graphitic carbon nitride (NiO-Ni-GCN) nanocomposites were successfully prepared by thermal treatment of melamine and NiCl2 6H2O. NiO-Ni-GCN nanocomposites showed superior electrochemical catalytic activity for the oxidation of octylphenol to pure GCN. A detection method of octylphenol in environmental water samples was developed based at NiO-Ni-GCN nanocomposites modified electrode under infrared light irradiation. Differential pulse voltammetry was used as the analytic technique of octylphenol, exhibiting stable and specific concentration-dependent oxidation signal in the presence of octylphenol in the range of 10nM to 1μM and 1μM to 50μM, with a detection limit of 3.3nM (3S/N). © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  3. Construction of reduced graphene oxide supported molybdenum carbides composite electrode as high-performance anode materials for lithium ion batteries

    Energy Technology Data Exchange (ETDEWEB)

    Chen, Minghua; Zhang, Jiawei [Key Laboratory of Engineering Dielectric and Applications (Ministry of Education), and School of Applied Science, Harbin University of Science and Technology, Harbin 150080 (China); Chen, Qingguo, E-mail: qgchen@263.net [Key Laboratory of Engineering Dielectric and Applications (Ministry of Education), and School of Applied Science, Harbin University of Science and Technology, Harbin 150080 (China); Qi, Meili [Key Laboratory of Engineering Dielectric and Applications (Ministry of Education), and School of Applied Science, Harbin University of Science and Technology, Harbin 150080 (China); Xia, Xinhui, E-mail: helloxxh@zju.edu.cn [State Key Laboratory of Silicon Materials, Key Laboratory of Advanced Materials and Applications for Batteries of Zhejiang Province, and School of Materials Science and Engineering, Zhejiang University, Hangzhou 310027 (China)

    2016-01-15

    Highlights: • Reduced graphene oxide supported molybdenum carbides are prepared by two-step strategy. • A unique sheet-on-sheet integrated nanostructure is favorable for fast ion/electron transfer. • The integrated electrode shows excellent Li ion storage performance. - Abstract: Metal carbides are emerging as promising anodes for advanced lithium ion batteries (LIBs). Herein we report reduced graphene oxide (RGO) supported molybdenum carbides (Mo{sub 2}C) integrated electrode by the combination of solution and carbothermal methods. In the designed integrated electrode, Mo{sub 2}C nanoparticles are uniformly dispersed among graphene nanosheets, forming a unique sheet-on-sheet integrated nanostructure. As anode of LIBs, the as-prepared Mo{sub 2}C-RGO integrated electrode exhibits noticeable electrochemical performances with a high reversible capacity of 850 mAh g{sup −1} at 100 mA g{sup −1}, and 456 mAh g{sup −1} at 1000 mA g{sup −1}, respectively. Moreover, the Mo{sub 2}C-RGO integrated electrode shows excellent cycling life with a capacity of ∼98.6 % at 1000 mA g{sup −1} after 400 cycles. Our research may pave the way for construction of high-performance metal carbides anodes of LIBs.

  4. Effect of carbo-nitride-rich and oxide-rich inclusions on the pitting susceptibility of depleted uranium

    International Nuclear Information System (INIS)

    Pu, Zhen; Chen, Xianglin; Meng, Xiandong; Wu, Yanping; Shen, Liang; Wang, Qingfu; Liu, Tianwei; Shuai, Maobing

    2017-01-01

    Highlights: •The Volta potential differences relative to the matrix are positive for both types of inclusions. •Both types of inclusions are cathodic in the “inclusion/matrix” microgalvanic couples. •The oxide-rich inclusions show a larger Volta potential value of about 115 mV than the carbo-nitride-rich inclusions. •The oxide-rich inclusions give stronger local galvanic coupling with the matrix. •The oxide-rich inclusions are more predisposed to initiate pitting corrosion. -- Abstract: The effects of carbo-nitride-rich and oxide-rich inclusions on the pitting susceptibility of depleted uranium were investigated by electrochemical corrosion measurements, optical microscopy, scanning Kelvin probe force microscopy (SKPFM), and SEM. The results of the potentiodynamic polarization tests suggest that oxide-rich inclusions are more likely to induce pitting corrosion than carbo-nitride-rich inclusions. This enhanced corrosion may be explained by the strong local galvanic coupling between the oxide-rich inclusion and the surrounding matrix, which, from the sight of SKPFM analysis, exhibits a 115 V higher Volta potential than the coupling between the carbo-nitride-rich inclusions and the matrix, respectively.

  5. Silicon carbide: A unique platform for metal-oxide-semiconductor physics

    Energy Technology Data Exchange (ETDEWEB)

    Liu, Gang [Institute for Advanced Materials, Devices and Nanotechnology, Rutgers University, Piscataway, New Jersey 08854 (United States); Tuttle, Blair R. [Department of Physics and Astronomy, Vanderbilt University, Nashville, Tennessee 37235 (United States); Dhar, Sarit [Department of Physics, Auburn University, Auburn, Alabama 36849 (United States)

    2015-06-15

    A sustainable energy future requires power electronics that can enable significantly higher efficiencies in the generation, distribution, and usage of electrical energy. Silicon carbide (4H-SiC) is one of the most technologically advanced wide bandgap semiconductor that can outperform conventional silicon in terms of power handling, maximum operating temperature, and power conversion efficiency in power modules. While SiC Schottky diode is a mature technology, SiC power Metal Oxide Semiconductor Field Effect Transistors are relatively novel and there is large room for performance improvement. Specifically, major initiatives are under way to improve the inversion channel mobility and gate oxide stability in order to further reduce the on-resistance and enhance the gate reliability. Both problems relate to the defects near the SiO{sub 2}/SiC interface, which have been the focus of intensive studies for more than a decade. Here we review research on the SiC MOS physics and technology, including its brief history, the state-of-art, and the latest progress in this field. We focus on the two main scientific problems, namely, low channel mobility and bias temperature instability. The possible mechanisms behind these issues are discussed at the device physics level as well as the atomic scale, with the support of published physical analysis and theoretical studies results. Some of the most exciting recent progress in interface engineering for improving the channel mobility and fundamental understanding of channel transport is reviewed.

  6. Preparation of silicon carbide-supported vanadium oxide and its application of removing NO by ammonia

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Zi-Bo; Xu, Xu [Yangzhou University, College of Environmental Science and Engineering, Yangzhou, Jiangsu (China); Bai, Shu-Li [Wuyi University, College of Chemical and Environmental Engineering, Jiangmen, Guangdong (China); Guan, Yu-Jiang; Jiang, Sheng-Tao [Taizhou University, Environmental Engineering, Taizhou, Zhejiang (China)

    2017-03-15

    The aim of this work was to study the preparation of SiC-supported V{sub 2}O{sub 5} catalysts and the kinetics on selective catalytic reduction for NO with NH{sub 3} on the catalysts. Using incipient wetness impregnation methods, vanadium oxide was applied to silicon carbide to prepare a SiC-supported vanadium oxide. X-ray photoelectron spectroscopy analysis confirmed that V{sub 2}O{sub 5} existed in the prepared materials. Using the prepared materials as catalysts, selective catalytic reduction for NO by NH{sub 3} has been analyzed, and reaction kinetics on the catalysts was studied at 150-300 C. The obtained results showed that the reduction reaction on the catalysts is close to zero-order kinetics with respect to NH{sub 3}, first-order with respect to NO, and half-order to O{sub 2}. Apparent activation energy for the reduction reaction was found to be 38 kJ mol{sup -1}. The prepared materials are stable and reusable. (orig.)

  7. The effect of titanium nickel nitride decorated carbon nanotubes-reduced graphene oxide hybrid support for methanol oxidation

    Science.gov (United States)

    Liu, Gen; Pan, Zhanchang; Li, Wuyi; Yu, Ke; Xia, Guowei; Zhao, Qixiang; Shi, Shikun; Hu, Guanghui; Xiao, Chumin; Wei, Zhigang

    2017-07-01

    Titanium nickel nitride (TiNiN) decorated three-dimensional (3D) carbon nanotubes-reduced graphene oxide (CNT-rGO), a fancy 3D platinum (Pt)-based catalyst hybrid support, is prepared by a solvothermal process followed by a nitriding process, which is tested as anodic catalyst support for the methanol oxidation reaction (MOR). The structure, morphology and composition of the synthesized TiNiN/CNT-rGO exhibits a uniform particle dispersion with high purity and interpenetrating 3D network structure. Notably, Pt/TiNiN/CNT-rGO catalyst exhibits significantly improved catalytic activity and durability for methanol oxidation in comparison with Pt/CNT-rGO and conventional Pt/C (JM). The outstanding electrochemical performance was attributed to structure and properties. That is, the 3D CNT-rGO provided a fast transport network for charge-transfer and mass-transfer as well as TiNiN NPs with good synergistic effect and the strong electronic coupling between different domains in TiNiN/CNT-rGO, thus the catalytic activity of the novel catalyst is greatly improved. These results evidences 3D TiNiN/CNT-rGO as a promising catalyst support for a wide range of applications in fuel cells.

  8. [Synergetic effects of silicon carbide and molecular sieve loaded catalyst on microwave assisted catalytic oxidation of toluene].

    Science.gov (United States)

    Wang, Xiao-Hui; Bo, Long-Li; Liu, Hai-Nan; Zhang, Hao; Sun, Jian-Yu; Yang, Li; Cai, Li-Dong

    2013-06-01

    Molecular sieve loaded catalyst was prepared by impregnation method, microwave-absorbing material silicon carbide and the catalyst were investigated for catalytic oxidation of toluene by microwave irradiation. Research work examined effects of silicon carbide and molecular sieve loading Cu-V catalyst's mixture ratio as well as mixed approach changes on degradation of toluene, and characteristics of catalyst were measured through scanning electron microscope, specific surface area test and X-ray diffraction analysis. The result showed that the fixed bed reactor had advantages of both thermal storage property and low-temperature catalytic oxidation when 20% silicon carbide was filled at the bottom of the reactor, and this could effectively improve the utilization of microwave energy as well as catalytic oxidation efficiency of toluene. Under microwave power of 75 W and 47 W, complete-combustion temperatures of molecular sieve loaded Cu-V catalyst and Cu-V-Ce catalyst to toluene were 325 degrees C and 160 degrees C, respectively. Characteristics of the catalysts showed that mixture of rare-earth element Ce increased the dispersion of active components in the surface of catalyst, micropore structure of catalyst effectively guaranteed high adsorption capacity for toluene, while amorphous phase of Cu and V oxides increased the activity of catalyst greatly.

  9. Highly efficient cobalt-doped carbon nitride polymers for solvent-free selective oxidation of cyclohexane

    Directory of Open Access Journals (Sweden)

    Yu Fu

    2017-04-01

    Full Text Available Selective oxidation of saturated hydrocarbons with molecular oxygen has been of great interest in catalysis, and the development of highly efficient catalysts for this process is a crucial challenge. A new kind of heterogeneous catalyst, cobalt-doped carbon nitride polymer (g-C3N4, was harnessed for the selective oxidation of cyclohexane. X-ray diffraction, Fourier transform infrared spectra and high resolution transmission electron microscope revealed that Co species were highly dispersed in g-C3N4 matrix and the characteristic structure of polymeric g-C3N4 can be retained after Co-doping, although Co-doping caused the incomplete polymerization to some extent. Ultraviolet–visible, Raman and X-ray photoelectron spectroscopy further proved the successful Co doping in g-C3N4 matrix as the form of Co(IIN bonds. For the selective oxidation of cyclohexane, Co-doping can markedly promote the catalytic performance of g-C3N4 catalyst due to the synergistic effect of Co species and g-C3N4 hybrid. Furthermore, the content of Co largely affected the activity of Co-doped g-C3N4 catalysts, among which the catalyst with 9.0 wt% Co content exhibited the highest yield (9.0% of cyclohexanone and cyclohexanol, as well as a high stability. Meanwhile, the reaction mechanism over Co-doped g-C3N4 catalysts was elaborated. Keywords: Selective oxidation of cyclohexane, Oxygen oxidant, Carbon nitride, Co-doping

  10. Transparent conducting oxide clad limited area epitaxy semipolar III-nitride laser diodes

    KAUST Repository

    Myzaferi, A.

    2016-08-11

    The bottom cladding design of semipolar III-nitride laser diodes is limited by stress relaxation via misfit dislocations that form via the glide of pre-existing threading dislocations (TDs), whereas the top cladding is limited by the growth time and temperature of the p-type layers. These design limitations have individually been addressed by using limited area epitaxy (LAE) to block TD glide in n-type AlGaN bottom cladding layers and by using transparent conducting oxide (TCO) top cladding layers to reduce the growth time and temperature of the p-type layers. In addition, a TCO-based top cladding should have significantly lower resistivity than a conventional p-type (Al)GaN top cladding. In this work, LAE and indium-tin-oxide cladding layers are used simultaneously in a (202⎯⎯1) III-nitride laser structure. Lasing was achieved at 446 nm with a threshold current density of 8.5 kA/cm2 and a threshold voltage of 8.4 V.

  11. Innovative boron nitride-doped propellants

    Directory of Open Access Journals (Sweden)

    Thelma Manning

    2016-04-01

    Full Text Available The U.S. military has a need for more powerful propellants with balanced/stoichiometric amounts of fuel and oxidants. However, balanced and more powerful propellants lead to accelerated gun barrel erosion and markedly shortened useful barrel life. Boron nitride (BN is an interesting potential additive for propellants that could reduce gun wear effects in advanced propellants (US patent pending 2015-026P. Hexagonal boron nitride is a good lubricant that can provide wear resistance and lower flame temperatures for gun barrels. Further, boron can dope steel, which drastically improves its strength and wear resistance, and can block the formation of softer carbides. A scalable synthesis method for producing boron nitride nano-particles that can be readily dispersed into propellants has been developed. Even dispersion of the nano-particles in a double-base propellant has been demonstrated using a solvent-based processing approach. Stability of a composite propellant with the BN additive was verified. In this paper, results from propellant testing of boron nitride nano-composite propellants are presented, including closed bomb and wear and erosion testing. Detailed characterization of the erosion tester substrates before and after firing was obtained by electron microscopy, inductively coupled plasma and x-ray photoelectron spectroscopy. This promising boron nitride additive shows the ability to improve gun wear and erosion resistance without any destabilizing effects to the propellant. Potential applications could include less erosive propellants in propellant ammunition for large, medium and small diameter fire arms.

  12. Real-time oxide evolution of copper protected by graphene and boron nitride barriers

    DEFF Research Database (Denmark)

    Galbiati, Miriam; Stoot, Adam Carsten; Mackenzie, David

    2017-01-01

    and material science. Owing to their different electronic properties (graphene is a semimetal, whereas hBN is a wide-bandgap insulator), their protection behaviour is distinctly different. Here we investigate the performance of graphene and hBN as barrier coatings applied on copper substrates through a real......-time study in two different oxidative conditions. Our findings show that the evolution of the copper oxidation is remarkably different for the two coating materials.......Applying protective or barrier layers to isolate a target item from the environment is a common approach to prevent or delay its degradation. The impermeability of two-dimensional materials such as graphene and hexagonal boron nitride (hBN) has generated a great deal of interest in corrosion...

  13. Real-time oxide evolution of copper protected by graphene and boron nitride barriers.

    Science.gov (United States)

    Galbiati, M; Stoot, A C; Mackenzie, D M A; Bøggild, P; Camilli, L

    2017-01-09

    Applying protective or barrier layers to isolate a target item from the environment is a common approach to prevent or delay its degradation. The impermeability of two-dimensional materials such as graphene and hexagonal boron nitride (hBN) has generated a great deal of interest in corrosion and material science. Owing to their different electronic properties (graphene is a semimetal, whereas hBN is a wide-bandgap insulator), their protection behaviour is distinctly different. Here we investigate the performance of graphene and hBN as barrier coatings applied on copper substrates through a real-time study in two different oxidative conditions. Our findings show that the evolution of the copper oxidation is remarkably different for the two coating materials.

  14. Synthesis of gallium nitride and related oxides via ammonobasic reactive sublimation (ARS)

    Energy Technology Data Exchange (ETDEWEB)

    Hernández-Hernández, Luis Alberto; Aguilar-Hernández, Jorge R.; Mejía-García, Concepción; Cruz-Gandarilla, Francisco; Contreras-Puente, Gerardo [Escuela Superior de Física y Matemáticas, Instituto Politécnico Nacional, Ciudad de México (Mexico); Moure-Flores, Francisco de [Facultad de Química, Materiales-Energía, Universidad Autónoma de Querétaro (Mexico); Melo-Pereira, Osvaldo de, E-mail: schwarzerengelxv@hotmail.com [Facultad de Física, Universidad de La Habana, La Habana (Cuba)

    2017-11-15

    Ammonobasic reactive sublimation (ARS) is proposed as a novel method to synthesize GaN and related oxides. Results indicate that GaN growth occurs by a nitriding process of Ga and related oxides, establishing a direct dependence on NH{sub 4} OH amount added as a primary chemical reactive. The samples were grown on p-type Si (111) substrates inside a tube furnace, employing GaN powder and NH{sub 4} OH. The characterizations of the samples were carried out by XRD, SEM, EDS and PL techniques, revealing the influence of NH{sub 4} OH on the improvement of GaN synthesis and the enhancement of its optical and structural properties. (author)

  15. Gas-exfoliated porous monolayer boron nitride for enhanced aerobic oxidative desulfurization performance

    Science.gov (United States)

    Wu, Yingcheng; Wu, Peiwen; Chao, Yanhong; He, Jing; Li, Hongping; Lu, Linjie; Jiang, Wei; Zhang, Beibei; Li, Huaming; Zhu, Wenshuai

    2018-01-01

    Hexagonal boron nitride has been regarded to be an efficient catalyst in aerobic oxidation fields, but limited by the less-exposed active sites. In this contribution, we proposed a simple green liquid nitrogen gas exfoliation strategy for preparation of porous monolayer nanosheets (BN-1). Owing to the reduced layer numbers, decreased lateral sizes and artificially-constructed pores, increased exposure of active sites was expected, further contributed to an enhanced aerobic oxidative desulfurization (ODS) performance up to ˜98% of sulfur removal, achieving ultra-deep desulfurization. This work not only introduced an excellent catalyst for aerobic ODS, but also provided a strategy for construction of some other highly-efficient monolayer two-dimensional materials for enhanced catalytic performance.

  16. Porous silicon carbide and aluminum oxide with unidirectional open porosity as model target materials for radioisotope beam production

    CERN Document Server

    Czapski, M; Tardivat, C; Stora, T; Bouville, F; Leloup, J; Luis, R Fernandes; Augusto, R Santos

    2013-01-01

    New silicon carbide (SiC) and aluminum oxide (Al2O3) of a tailor-made microstructure were produced using the ice-templating technique, which permits controlled pore formation conditions within the material. These prototypes will serve to verify aging of the new advanced target materials under irradiation with proton beams. Before this, the evaluation of their mechanical integrity was made based on the energy deposition spectra produced by FLORA codes. (C) 2013 Elsevier B.V. All rights reserved.

  17. Porous silicon carbide and aluminum oxide with unidirectional open porosity as model target materials for radioisotope beam production

    Science.gov (United States)

    Czapski, M.; Stora, T.; Tardivat, C.; Deville, S.; Santos Augusto, R.; Leloup, J.; Bouville, F.; Fernandes Luis, R.

    2013-12-01

    New silicon carbide (SiC) and aluminum oxide (Al2O3) of a tailor-made microstructure were produced using the ice-templating technique, which permits controlled pore formation conditions within the material. These prototypes will serve to verify aging of the new advanced target materials under irradiation with proton beams. Before this, the evaluation of their mechanical integrity was made based on the energy deposition spectra produced by FLUKA codes.

  18. Graphitic carbon nitride: Synthesis, characterization and photocatalytic decomposition of nitrous oxide

    International Nuclear Information System (INIS)

    Praus, Petr; Svoboda, Ladislav; Ritz, Michal; Troppová, Ivana; Šihor, Marcel; Kočí, Kamila

    2017-01-01

    Graphitic carbon nitride (g-C_3N_4) was synthetized by condensation of melamine at the temperatures of 400–700 °C in air for 2 h and resulting products were characterized and finally tested for the photocatalytic decomposition of nitrous oxide. The characterization methods were elemental analysis, UV–Vis diffuse reflectance spectroscopy (DRS), photoluminescence (PL), Fourier transform infrared (FTIR) and Raman spectroscopy, measurement of specific surface area (SSA), X-ray powder diffraction (XRD), scanning (SEM) and transmission (TEM) electron microscopy. The XRD patterns, FTIR and Raman spectra proved the presence of g-C_3N_4 at above 550 °C but the optimal synthesis temperature of 600–650 °C was found. Under these conditions graphitic carbon nitride of the overall empirical composition of C_6N_9H_2 was formed. At lower temperatures g-C_3N_4 with a higher content of hydrogen was formed but at higher temperatures g-C_3N_4 was decomposed. At the temperatures above 650 °C, its exfoliation was observed. The photocatalytic experiments showed that the activity of all the samples synthetized at 400–700 °C was very similar, that is, within the range of experimental error (5 %). The total conversion of N_2O reached about 43 % after 14 h. - Highlights: • Graphitic carbon nitride (g-C_3N_4) was thermally synthetized from melamine in the range of 400–700 °C. • The optimal temperature was determined at 600–650 °C. • All synthesis products were properly characterized by physico-chemical methods. • Exfoliation of g-C_3N_4 at above 600 °C was observed. • g-C_3N_4 was used for the photocatalytic decomposition of N_2O.

  19. Zr{sub 2}N{sub 2}Se. The first zirconium(IV) nitride selenide by the oxidation of zirconium(III) nitride with selenium

    Energy Technology Data Exchange (ETDEWEB)

    Lissner, Falk; Hack, Bettina; Schleid, Thomas [Institute for Inorganic Chemistry, University of Stuttgart (Germany); Lerch, Martin [Institute for Chemistry, Technical University of Berlin (Germany)

    2012-08-15

    The oxidation of zirconium(III) nitride (ZrN) with suitable amounts of selenium (Se) in the presence of sodium chloride (NaCl) as flux yields small yellow brownish platelets of the first zirconium(IV) nitride selenide with the composition Zr{sub 2}N{sub 2}Se. The new compound crystallizes in the hexagonal space group P6{sub 3}/mmc (no. 194) with a = 363.98(2) pm, c = 1316.41(9) pm (c/a = 3.617) and two formula units per unit cell. The crystallographically unique Zr{sup 4+} cations are surrounded by three selenide and four nitride anions in the shape of a capped trigonal antiprism. The Se{sup 2-} anions are coordinated by six Zr{sup 4+} cations as trigonal prism and the N{sup 3-} anions reside in tetrahedral surrounding of Zr{sup 4+} cations. These [NZr{sub 4}]{sup 13+} tetrahedra become interconnected via three edges each to form {sup 2}{sub ∞}{[(NZr_4_/_4)_2]"2"+} double layers parallel to the (001) plane, which are held together by monolayers of Se{sup 2-} anions. (Copyright copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  20. Interfacial-Bonding-Regulated CO Oxidation over Pt Atoms Immobilized on Gas-Exfoliated Hexagonal Boron Nitride

    KAUST Repository

    Liu, Xin; Zhu, Hongdan; Linguerri, Roberto; Han, Yu; Chambaud, Gilberte; Meng, Changgong

    2017-01-01

    We compared the electronic structure and CO oxidation mechanisms over Pt atoms immobilized by both B-vacancies and N-vacancies on gas-exfoliated hexagonal boron nitride. We showed that chemical bonds are formed between the B atoms associated

  1. Copper atoms embedded in hexagonal boron nitride as potential catalysts for CO oxidation: A first-principles investigation

    KAUST Repository

    Liu, Xin; Duan, Ting; Sui, Yanhui; Meng, Changgong; Han, Yu

    2014-01-01

    We addressed the electronic structure of Cu atoms embedded in hexagonal boron nitride (h-BN) and their catalytic role in CO oxidation by first-principles-based calculations. We showed that Cu atoms prefer to bind directly with the localized defects

  2. A template-free solvent-mediated synthesis of high surface area boron nitride nanosheets for aerobic oxidative desulfurization.

    Science.gov (United States)

    Wu, Peiwen; Zhu, Wenshuai; Chao, Yanhong; Zhang, Jinshui; Zhang, Pengfei; Zhu, Huiyuan; Li, Changfeng; Chen, Zhigang; Li, Huaming; Dai, Sheng

    2016-01-04

    Hexagonal boron nitride nanosheets (h-BNNs) with rather high specific surface area (SSA) are important two-dimensional layer-structured materials. Here, a solvent-mediated synthesis of h-BNNs revealed a template-free lattice plane control strategy that induced high SSA nanoporous structured h-BNNs with outstanding aerobic oxidative desulfurization performance.

  3. Study Trapped Charge Distribution in P-Channel Silicon-Oxide-Nitride-Oxide-Silicon Memory Device Using Dynamic Programming Scheme

    Science.gov (United States)

    Li, Fu-Hai; Chiu, Yung-Yueh; Lee, Yen-Hui; Chang, Ru-Wei; Yang, Bo-Jun; Sun, Wein-Town; Lee, Eric; Kuo, Chao-Wei; Shirota, Riichiro

    2013-04-01

    In this study, we precisely investigate the charge distribution in SiN layer by dynamic programming of channel hot hole induced hot electron injection (CHHIHE) in p-channel silicon-oxide-nitride-oxide-silicon (SONOS) memory device. In the dynamic programming scheme, gate voltage is increased as a staircase with fixed step amplitude, which can prohibits the injection of holes in SiN layer. Three-dimensional device simulation is calibrated and is compared with the measured programming characteristics. It is found, for the first time, that the hot electron injection point quickly traverses from drain to source side synchronizing to the expansion of charged area in SiN layer. As a result, the injected charges quickly spread over on the almost whole channel area uniformly during a short programming period, which will afford large tolerance against lateral trapped charge diffusion by baking.

  4. The effect of titanium nickel nitride decorated carbon nanotubes-reduced graphene oxide hybrid support for methanol oxidation

    Energy Technology Data Exchange (ETDEWEB)

    Liu, Gen [School of Chemical Engineering and Light Industry, Guangdong University of Technology, Guangzhou, Guangdong 510006 (China); Pan, Zhanchang, E-mail: panzhanchang@163.com [School of Chemical Engineering and Light Industry, Guangdong University of Technology, Guangzhou, Guangdong 510006 (China); Li, Wuyi; Yu, Ke [School of Chemical Engineering and Light Industry, Guangdong University of Technology, Guangzhou, Guangdong 510006 (China); Xia, Guowei; Zhao, Qixiang; Shi, Shikun [Victory Giant Technology (Hui Zhou) Co., Ltd., Huizhou 516083 (China); Hu, Guanghui; Xiao, Chumin; Wei, Zhigang [School of Chemical Engineering and Light Industry, Guangdong University of Technology, Guangzhou, Guangdong 510006 (China)

    2017-07-15

    Highlights: • TiNiN/CNT-rGO support with an interactive three-dimensional structure and high surface area was synthesized. • Pt nanoparticles with small size were well dispersed on TiNiN/CNT-rGO support. • Pt/TiNiN/CNT-rGO shows remarkably enhanced methanol oxidation activity and durability. - Abstract: Titanium nickel nitride (TiNiN) decorated three-dimensional (3D) carbon nanotubes-reduced graphene oxide (CNT-rGO), a fancy 3D platinum (Pt)-based catalyst hybrid support, is prepared by a solvothermal process followed by a nitriding process, which is tested as anodic catalyst support for the methanol oxidation reaction (MOR). The structure, morphology and composition of the synthesized TiNiN/CNT-rGO exhibits a uniform particle dispersion with high purity and interpenetrating 3D network structure. Notably, Pt/TiNiN/CNT-rGO catalyst exhibits significantly improved catalytic activity and durability for methanol oxidation in comparison with Pt/CNT-rGO and conventional Pt/C (JM). The outstanding electrochemical performance was attributed to structure and properties. That is, the 3D CNT-rGO provided a fast transport network for charge-transfer and mass-transfer as well as TiNiN NPs with good synergistic effect and the strong electronic coupling between different domains in TiNiN/CNT-rGO, thus the catalytic activity of the novel catalyst is greatly improved. These results evidences 3D TiNiN/CNT-rGO as a promising catalyst support for a wide range of applications in fuel cells.

  5. The effect of titanium nickel nitride decorated carbon nanotubes-reduced graphene oxide hybrid support for methanol oxidation

    International Nuclear Information System (INIS)

    Liu, Gen; Pan, Zhanchang; Li, Wuyi; Yu, Ke; Xia, Guowei; Zhao, Qixiang; Shi, Shikun; Hu, Guanghui; Xiao, Chumin; Wei, Zhigang

    2017-01-01

    Highlights: • TiNiN/CNT-rGO support with an interactive three-dimensional structure and high surface area was synthesized. • Pt nanoparticles with small size were well dispersed on TiNiN/CNT-rGO support. • Pt/TiNiN/CNT-rGO shows remarkably enhanced methanol oxidation activity and durability. - Abstract: Titanium nickel nitride (TiNiN) decorated three-dimensional (3D) carbon nanotubes-reduced graphene oxide (CNT-rGO), a fancy 3D platinum (Pt)-based catalyst hybrid support, is prepared by a solvothermal process followed by a nitriding process, which is tested as anodic catalyst support for the methanol oxidation reaction (MOR). The structure, morphology and composition of the synthesized TiNiN/CNT-rGO exhibits a uniform particle dispersion with high purity and interpenetrating 3D network structure. Notably, Pt/TiNiN/CNT-rGO catalyst exhibits significantly improved catalytic activity and durability for methanol oxidation in comparison with Pt/CNT-rGO and conventional Pt/C (JM). The outstanding electrochemical performance was attributed to structure and properties. That is, the 3D CNT-rGO provided a fast transport network for charge-transfer and mass-transfer as well as TiNiN NPs with good synergistic effect and the strong electronic coupling between different domains in TiNiN/CNT-rGO, thus the catalytic activity of the novel catalyst is greatly improved. These results evidences 3D TiNiN/CNT-rGO as a promising catalyst support for a wide range of applications in fuel cells.

  6. David Adler Lectureship Award in the Field of Materials Physics Talk: Novel Nitride and Oxide Electronics

    Science.gov (United States)

    Pearton, Stephen

    2011-03-01

    Recent progress in development of GaN-based transistors for gas and bio-sensing applications and amorphous IGZO layers for use thin film transistors (TFTs)on flexible substrates, including paper,will be presented. For the detection of gases such as hydrogen, the gateless GaN transistors are typically coated with a catalyst metal such as Pd or Pt to increase the detection sensitivity at room temperature. Functionalizing the surface with oxides, polymers and nitrides is also useful in enhancing the detection sensitivity for gases and ionic solutions.The use of enzymes or adsorbed antibody layers on the semiconductor surface leads to highly specific detection of a broad range of antigens of interest in the medical and security fields. We give examples of recent work showing sensitive detection of glucose, lactic acid, prostate cancer and breast cancer markers and the integration of the sensors with wireless data transmission systems to achieve robust, portable sensors. The amorphous transparent conducting oxide InZnGaO4 (IGZO) is attracting attention because of its high electron mobility (10-50 cm2.V-1.sec-1), high transparency in the visible region of the spectrum and its ability to be deposited with a wide range of conductivities.This raises the possibility of making low-cost electronics on a very wide range of arbitrary surfaces, including paper and plastics. N-type oxides such as zinc oxide, zinc tin oxide, indium gallium oxide, and indium gallium zinc tin oxide (IGZO) exhibit surprisingly high carrier mobilities even for amorphous films deposited at 300K. This has been explained by the fact that the conduction in these materials is predominantly through non-directional s orbitals which are less affected by disorder than the directional sp3 orbitals which control electron transport in Si. Examples of progress and discussion of remaining obstacles to use of IGZO TFTs will be presented Work performed in collaboration with Fan Ren.

  7. The origin of traps and the effect of nitrogen plasma in oxide-nitride-oxide structures for non-volatile memories

    International Nuclear Information System (INIS)

    Kim, W. S.; Kwak, D. W.; Oh, J. S.; Lee, D. W.; Cho, H. Y.

    2010-01-01

    Ultrathin oxide-nitride-oxide (ONO) dielectric stacked layers are fundamental structures of silicon-oxide-nitride-oxide-silicon (SONOS) non-volatile memory devices in which information is known to be stored as charges trapped in silicon nitride. Deep-level transient spectroscopy (DLTS) and a capacitance-voltage (CV) analysis were introduced to observe the trap behavior related to the memory effect in memory devices. The DLTS results verified that the nitride-related traps were a dominant factor in the memory effect. The energy of hole traps was 0.307 eV above the balance band. To improve the memory effects of the non-volatile memory devices with ONO structures, we introduced a nitrogen plasma treatment. After the N-plasma treatment, the flat-band voltage shift (ΔV FB ) was increased by about 1.5 times. The program and the erase (P-E) characteristics were also shown to be better than those for the as-ONO structure. In addition, the retention characteristics were improved by over 2.4 times.

  8. Synthesis of boron nitride nanotubes by an oxide-assisted chemical method

    International Nuclear Information System (INIS)

    Singhal, S. K.; Srivastava, A. K.; Gupta, Anil K.; Chen, Z. G.

    2010-01-01

    We report a new method for the synthesis of boron nitride (BN) nanotubes employing a two-step process in which some oxides have found to catalyze the growth of BN nanotubes. In the first step, a precursor containing B-N-O-Fe/Mg was prepared by ball milling a mixture of B, B 2 O 3 , Fe 2 O 3 and MgO (1:7:2:1 mass ratio) in NH 3 for 3 h. BN nanotubes (diameter: 20-100 nm) were grown in the second step from this precursor by isothermal annealing at 1,350 o C in NH 3 for about 4 h. XRD, SEM and HR-TEM studies elucidated the spindle-like morphology of these nanotubes of hexagonal crystal structure. The Raman spectrum showed the peak broadening and shifts to higher frequency. The present method showed that some oxides assisted the growth of BN nanotubes. A possible reaction mechanism on the formation of BN nanotubes in the presence of these oxides is discussed.

  9. Graphitic carbon nitride: Synthesis, characterization and photocatalytic decomposition of nitrous oxide

    Energy Technology Data Exchange (ETDEWEB)

    Praus, Petr, E-mail: petr.praus@vsb.cz [Institute of Environmental Technology, VŠB-Technical University of Ostrava, 17. Listopadu 15/2172, Ostrava 708 33 (Czech Republic); Department of Chemistry, Faculty of Metallurgy and Materials Engineering, VŠB-Technical University of Ostrava, 17. Listopadu 15/2172, Ostrava 708 33 (Czech Republic); Svoboda, Ladislav [Institute of Environmental Technology, VŠB-Technical University of Ostrava, 17. Listopadu 15/2172, Ostrava 708 33 (Czech Republic); Department of Chemistry, Faculty of Metallurgy and Materials Engineering, VŠB-Technical University of Ostrava, 17. Listopadu 15/2172, Ostrava 708 33 (Czech Republic); Ritz, Michal [Department of Chemistry, Faculty of Metallurgy and Materials Engineering, VŠB-Technical University of Ostrava, 17. Listopadu 15/2172, Ostrava 708 33 (Czech Republic); Troppová, Ivana; Šihor, Marcel; Kočí, Kamila [Institute of Environmental Technology, VŠB-Technical University of Ostrava, 17. Listopadu 15/2172, Ostrava 708 33 (Czech Republic)

    2017-06-01

    Graphitic carbon nitride (g-C{sub 3}N{sub 4}) was synthetized by condensation of melamine at the temperatures of 400–700 °C in air for 2 h and resulting products were characterized and finally tested for the photocatalytic decomposition of nitrous oxide. The characterization methods were elemental analysis, UV–Vis diffuse reflectance spectroscopy (DRS), photoluminescence (PL), Fourier transform infrared (FTIR) and Raman spectroscopy, measurement of specific surface area (SSA), X-ray powder diffraction (XRD), scanning (SEM) and transmission (TEM) electron microscopy. The XRD patterns, FTIR and Raman spectra proved the presence of g-C{sub 3}N{sub 4} at above 550 °C but the optimal synthesis temperature of 600–650 °C was found. Under these conditions graphitic carbon nitride of the overall empirical composition of C{sub 6}N{sub 9}H{sub 2} was formed. At lower temperatures g-C{sub 3}N{sub 4} with a higher content of hydrogen was formed but at higher temperatures g-C{sub 3}N{sub 4} was decomposed. At the temperatures above 650 °C, its exfoliation was observed. The photocatalytic experiments showed that the activity of all the samples synthetized at 400–700 °C was very similar, that is, within the range of experimental error (5 %). The total conversion of N{sub 2}O reached about 43 % after 14 h. - Highlights: • Graphitic carbon nitride (g-C{sub 3}N{sub 4}) was thermally synthetized from melamine in the range of 400–700 °C. • The optimal temperature was determined at 600–650 °C. • All synthesis products were properly characterized by physico-chemical methods. • Exfoliation of g-C{sub 3}N{sub 4} at above 600 °C was observed. • g-C{sub 3}N{sub 4} was used for the photocatalytic decomposition of N{sub 2}O.

  10. Study of reactions between uranium-plutonium mixed oxide and uranium nitride and between uranium oxide and uranium nitride; Etude des reactions entre l`oxyde mixte d`uranium-plutonium et le nitrure d`uranium et entre l`oxyde d`uranium et le nitrure d`uranium

    Energy Technology Data Exchange (ETDEWEB)

    Lecraz, C

    1993-06-11

    A new type of combustible elements which is a mixture of uranium nitride and uranium-plutonium oxide could be used for Quick Neutrons Reactors. Three different studies have been made on the one hand on the reactions between uranium nitride (UN) and uranium-plutonium mixed oxide (U,Pu)O{sub 2}, on the other hand on these between UN and uranium oxide UO{sub 2}. They show a sizeable reaction between nitride and oxide for the studied temperatures range (1573 K to 1973 K). This reaction forms a oxynitride compound, MO{sub x} N{sub y} with M=U or M=(U,Pu), whose crystalline structure is similar to oxide`s. Solubility of nitride in both oxides is studied, as the reaction kinetics. (TEC). 32 refs., 48 figs., 22 tabs.

  11. Oxidation protection and behavior of in-situ zirconium diboride–silicon carbide coating for carbon/carbon composites

    International Nuclear Information System (INIS)

    Li, Lu; Li, Hejun; Yin, Xuemin; Chu, Yanhui; Chen, Xi; Fu, Qiangang

    2015-01-01

    Highlights: • ZrB 2 –SiC coating was prepared on C/C composite by in-situ reaction. • A two-layered structure was obtained when the coating was oxidized at 1500 °C. • The formation and collapse of bubbles influenced the coating oxidation greatly. • The morphology evolution of oxide scale during oxidation was illuminated. - Abstract: To protect carbon/carbon (C/C) composites against oxidation, zirconium diboride–silicon carbide (ZrB 2 –SiC) coating was prepared by in-situ reaction using ZrC, B 4 C and Si as raw materials. The in-situ ZrB 2 –SiC coated C/C presented good oxidation resistance, whose weight loss was only 0.15% after isothermal oxidation at 1500 °C for 216 h. Microstructure evolution of coating at 1500 °C was studied, revealing a two-layered structure: (1) ZrO 2 (ZrSiO 4 ) embedded in SiO 2 -rich glass, and (2) unaffected ZrB 2 –SiC. The formation and collapse of bubbles influenced the coating oxidation greatly. A model based on the evolution of oxide scale was proposed to explain the failure mechanism of coating

  12. Surface Area, and Oxidation Effects on Nitridation Kinetics of Silicon Powder Compacts

    Science.gov (United States)

    Bhatt, R. T.; Palczer, A. R.

    1998-01-01

    Commercially available silicon powders were wet-attrition-milled from 2 to 48 hr to achieve surface areas (SA's) ranging from 1.3 to 70 sq m/g. The surface area effects on the nitridation kinetics of silicon powder compacts were determined at 1250 or 1350 C for 4 hr. In addition, the influence of nitridation environment, and preoxidation on nitridation kinetics of a silicon powder of high surface area (approximately equals 63 sq m/g) was investigated. As the surface area increased, so did the percentage nitridation after 4 hr in N2 at 1250 or 1350 C. Silicon powders of high surface area (greater than 40 sq m/g) can be nitrided to greater than 70% at 1250 C in 4 hr. The nitridation kinetics of the high-surface-area powder compacts were significantly delayed by preoxidation treatment. Conversely, the nitridation environment had no significant influence on the nitridation kinetics of the same powder. Impurities present in the starting powder, and those accumulated during attrition milling, appeared to react with the silica layer on the surface of silicon particles to form a molten silicate layer, which provided a path for rapid diffusion of nitrogen and enhanced the nitridation kinetics of high surface area silicon powder.

  13. Nitridation of one-dimensional tungsten oxide nanostructures: Changes in structure and photoactivity

    KAUST Repository

    Varga, Tamás

    2017-10-12

    In the search for stable, visible light active photoelectrodes, hydrothermally synthesized tungsten oxide nanowires were modified via nitrogen incorporation into their structure. To this end, nanowires were heat-treated in ammonia/nitrogen atmosphere at different temperatures. This procedure caused transitions in their structure that were investigated along with the photoelectrochemical properties of the samples. Results were subsequently compared to the reference samples treated in inert nitrogen atmosphere. Morphological changes and structural transitions were followed by transmission and scanning electron microscopy and X-ray diffraction. Bandgap energies were determined from the UV–vis spectra of the materials, while photoelectrochemical properties were tested by linear sweep photovoltammetry and electrochemical impedance spectroscopy. Pristine tungsten oxide nanowires were first transformed into tungsten oxynitride and then tungsten nitride during high-temperature calcination in ammonia atmosphere. Electron microscopic investigation revealed that, along with phase transition, the initial fibrous morphology gradually converted into nanosheets. Simultaneously, bandgap energies significantly decreased in the calcination process, too. Photoelectrochemical measurements demonstrated that photoactivity in the treated samples was not improved by the decrease of the bandgap. This behavior might be explained with the deterioration of charge carrier transport properties of the materials due to the increased number of structural defects (acting as trap states), and current ongoing work aims to verify this notion.

  14. High Dielectric Performance of Solution-Processed Aluminum Oxide-Boron Nitride Composite Films

    Science.gov (United States)

    Yu, Byoung-Soo; Ha, Tae-Jun

    2018-04-01

    The material compositions of oxide films have been extensively investigated in an effort to improve the electrical characteristics of dielectrics which have been utilized in various electronic devices such as field-effect transistors, and storage capacitors. Significantly, solution-based compositions have attracted considerable attention as a highly effective and practical technique to replace vacuum-based process in large-area. Here, we demonstrate solution-processed composite films consisting of aluminum oxide (Al2O3) and boron nitride (BN), which exhibit remarkable dielectric properties through the optimization process. The leakage current of the optimized Al2O3-BN thin films was decreased by a factor of 100 at 3V, compared to pristine Al2O3 thin film without a loss of the dielectric constant or degradation of the morphological roughness. The characterization by X-ray photoelectron spectroscopy measurements revealed that the incorporation of BN with an optimized concentration into the Al2O3 dielectric film reduced the density of oxygen vacancies which act as defect states, thereby improving the dielectric characteristics.

  15. Influence of the alloy composition on the oxidation and internal-nitridation behaviour of nickel-base superalloys

    International Nuclear Information System (INIS)

    Krupp, U.; Christ, H.-J.

    1999-01-01

    Internal nitridation of nickel-base superalloys takes place as a consequence of the failure of protecting oxide scales (Al 2 O 3 and Cr 2 O 3 , respectively) and leads to a deterioration of the material properties due to near-surface embrittlement caused by the nitrides precipitated (TiN and AlN, respectively) and due to near-surface dissolution of the γ' phase. By using thermogravimetric methods in a temperature range between 800 C and 1100 C supplemented by microstructural examinations, the failure potential due to internal nitridation could be documented. A quantification was carried out by extending the experimental program to thermogravimetric studies in a nearly oxygen-free nitrogen atmosphere which was also applied to various model alloys of the system Ni-Cr-Al-Ti. It could be shown that the nitrogen diffusivity and solubility in nickel-base alloys is influenced particularly by the chromium concentration. An increasing chromium content leads to an enhanced internal-nitridation attack. (orig.)

  16. Use of thermogravimetry and thermodynamic calculations for specifying chromium diffusion occurring in alloys containing chromium carbides during high temperature oxidation

    International Nuclear Information System (INIS)

    Berthod, Patrice; Conrath, Elodie

    2015-01-01

    The chromium diffusion is of great importance for the high temperature oxidation behaviour of the chromium-rich carbides-strengthened superalloys. These ones contain high chromium quantities for allowing them well resisting hot corrosion by constituting and maintaining a continuous external scale of chromia. Knowing how chromium can diffuse in such alloys is thus very useful for predicting the sustainability of their chromia-forming behaviour. Since Cr diffusion occurs through the external part of the alloy already affected by the previous steps of oxidation (decarburized subsurface) it is more judicious to specify this diffusion during the oxidation process itself. This was successfully carried out in this work in the case of a model chromia-forming nickel-based alloy containing chromium carbides, Ni(bal.)–25Cr–0.5C (in wt.%). This was done by specifying, using real-time thermogravimetry, the mass gain kinetic due to oxidation, and by combining it with the post-mortem determination of the Cr concentration profiles in subsurface. The values of D Cr thus obtained for 1000, 1050 and 1100 °C in the alloy subsurface are consistent with the values obtained in earlier works for similar alloy's chemical compositions. - Highlights: • A Ni25Cr0.50C alloy was oxidized at high temperature in a thermo-balance. • The mass gain files were analysed to specify the Cr 2 O 3 volatilization constant K v . • Concentration profiles were acquired to specify the chromium gradient. • The diffusion coefficient of chromium through the subsurface was deduced. • The obtained diffusion coefficient is consistent with values previously obtained.

  17. The Mechanical and Tribology Properties of Sputtered Titanium Aluminum Nitride Coating on the Tungsten Carbide Insert Tool in the Dry Turning of Tool Steel

    Directory of Open Access Journals (Sweden)

    Esmar Budi

    2015-02-01

    Full Text Available The effect of the sputtering parameters on the mechanical tribology properties of Titanium Aluminum Nitride coating on the tungsten cabide insert tool in the dry turning of tool steel has been investigated. The coating was deposited using a Direct Current magnetron sputtering system with various substrate biases (-79 to -221 V and nitrogen flow rates (30 to 72 sccm. The dry turning test was carried out on a Computer Numeric Code machine using an optimum cutting parameter setting. The results show that the lowest flank wear (~0.4 mm was achieved using a Titanium Aluminum Nitride-coated tool that was deposited at a high substrate bias (-200 V and a high nitrogen flow rate (70 sccm. The lowest flank wear was attributed to high coating hardness.

  18. Preparation of Pt-mesoporous tungsten carbide/carbon composites via a soft-template method for electrochemical methanol oxidation

    International Nuclear Information System (INIS)

    Ma, Chun’an; Kang, Lingzhi; Shi, Meiqin; Lang, Xiaoling; Jiang, Yekun

    2014-01-01

    Highlights: • Mesoporous composite Pt-m(WC/C) is prepared by a soft template method. • The structure of phenolic gives a space limitation effect on the growth of WC. • Analysis of the effect of F127 on controlling the structure of composites. • Pt-m(WC/C) exhibits more than three times higher than Pt/C in catalytic activity. -- Abstract: This paper introduces a simple and reproducible chemical process for synthesis of Pt-mesoporous tungsten carbide/carbon composites composites Pt-m(WC/C) by means of a soft-template method. In this process, low-molecular-weight phenolic resol acted as the precursor both for carbon support and also the carbon resource of tungsten carbide. Tungsten hexachloride was used as a tungsten precursor along with different amount of triblock copolymer Pluronic F127 as pore-forming component. The best performance of Pt-m(WC/C) towards methanol oxidation is found when the mass ratios of WCl 6 :F127 is 1:0.6. The composite presents an improved methanol oxidation performance evidenced by a negative shift in onset potential, and increase of peak current density, compared with commercial Pt/C. The difference is explained by the adding of appropriate amount of F127 which facilitates the construction of mesoporous matrix structure of WC/C

  19. Preparation of Pt-mesoporous tungsten carbide/carbon composites via a soft-template method for electrochemical methanol oxidation

    Energy Technology Data Exchange (ETDEWEB)

    Ma, Chun’an, E-mail: science@zjut.edu.cn; Kang, Lingzhi; Shi, Meiqin; Lang, Xiaoling; Jiang, Yekun

    2014-03-05

    Highlights: • Mesoporous composite Pt-m(WC/C) is prepared by a soft template method. • The structure of phenolic gives a space limitation effect on the growth of WC. • Analysis of the effect of F127 on controlling the structure of composites. • Pt-m(WC/C) exhibits more than three times higher than Pt/C in catalytic activity. -- Abstract: This paper introduces a simple and reproducible chemical process for synthesis of Pt-mesoporous tungsten carbide/carbon composites composites Pt-m(WC/C) by means of a soft-template method. In this process, low-molecular-weight phenolic resol acted as the precursor both for carbon support and also the carbon resource of tungsten carbide. Tungsten hexachloride was used as a tungsten precursor along with different amount of triblock copolymer Pluronic F127 as pore-forming component. The best performance of Pt-m(WC/C) towards methanol oxidation is found when the mass ratios of WCl{sub 6}:F127 is 1:0.6. The composite presents an improved methanol oxidation performance evidenced by a negative shift in onset potential, and increase of peak current density, compared with commercial Pt/C. The difference is explained by the adding of appropriate amount of F127 which facilitates the construction of mesoporous matrix structure of WC/C.

  20. Electron transport properties of indium oxide - indium nitride metal-oxide-semiconductor heterostructures

    International Nuclear Information System (INIS)

    Wang, C.Y.; Hauguth, S.; Polyakov, V.; Schwierz, F.; Cimalla, V.; Kups, T.; Himmerlich, M.; Schaefer, J.A.; Krischok, S.; Ambacher, O.; Morales, F.M.; Lozano, J.G.; Gonzalez, D.; Lebedev, V.

    2008-01-01

    The structural, chemical and electron transport properties of In 2 O 3 /InN heterostructures and oxidized InN epilayers are reported. It is shown that the accumulation of electrons at the InN surface can be manipulated by the formation of a thin surface oxide layer. The epitaxial In 2 O 3 /InN heterojunctions show an increase in the electron concentration due to the increasing band banding at the heterointerface. The oxidation of InN results in improved transport properties and in a reduction of the sheet carrier concentration of the InN epilayer very likely caused by a passivation of surface donors. (copyright 2008 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  1. Methanol electro-oxidation on platinum modified tungsten carbides in direct methanol fuel cells: a DFT study.

    Science.gov (United States)

    Sheng, Tian; Lin, Xiao; Chen, Zhao-Yang; Hu, P; Sun, Shi-Gang; Chu, You-Qun; Ma, Chun-An; Lin, Wen-Feng

    2015-10-14

    In exploration of low-cost electrocatalysts for direct methanol fuel cells (DMFCs), Pt modified tungsten carbide (WC) materials are found to be great potential candidates for decreasing Pt usage whilst exhibiting satisfactory reactivity. In this work, the mechanisms, onset potentials and activity for electrooxidation of methanol were studied on a series of Pt-modified WC catalysts where the bare W-terminated WC(0001) substrate was employed. In the surface energy calculations of a series of Pt-modified WC models, we found that the feasible structures are mono- and bi-layer Pt-modified WCs. The tri-layer Pt-modified WC model is not thermodynamically stable where the top layer Pt atoms tend to accumulate and form particles or clusters rather than being dispersed as a layer. We further calculated the mechanisms of methanol oxidation on the feasible models via methanol dehydrogenation to CO involving C-H and O-H bonds dissociating subsequently, and further CO oxidation with the C-O bond association. The onset potentials for the oxidation reactions over the Pt-modified WC catalysts were determined thermodynamically by water dissociation to surface OH* species. The activities of these Pt-modified WC catalysts were estimated from the calculated kinetic data. It has been found that the bi-layer Pt-modified WC catalysts may provide a good reactivity and an onset oxidation potential comparable to pure Pt and serve as promising electrocatalysts for DMFCs with a significant decrease in Pt usage.

  2. Porous silicon carbide and aluminum oxide with unidirectional open porosity as model target materials for radioisotope beam production

    Energy Technology Data Exchange (ETDEWEB)

    Czapski, M., E-mail: michal.czapski@cern.ch [CERN, Genève 23 CH-1211 (Switzerland); Stora, T. [CERN, Genève 23 CH-1211 (Switzerland); Tardivat, C.; Deville, S. [Lab. de Synthèse et Fonctionnalisation des Céramiques, CNRS/Saint-Gobain, Av. Jauffret 84306 Cavaillon (France); Santos Augusto, R. [CERN, Genève 23 CH-1211 (Switzerland); Leloup, J.; Bouville, F. [Lab. de Synthèse et Fonctionnalisation des Céramiques, CNRS/Saint-Gobain, Av. Jauffret 84306 Cavaillon (France); Fernandes Luis, R. [Univ. Técnica de Lisboa Estrada Nacional 10, 2686-953 Sacavem, Loures (Portugal)

    2013-12-15

    Highlights: • SiC and Al{sub 2}O{sub 3} of uniaxial porosity were produced with ice-templating method. • The method allows controlled pore formation within the material. • Calculation of mechanical integrity under irradiation with protons was performed. • Generated thermal stresses should not exceed material’s strength. -- Abstract: New silicon carbide (SiC) and aluminum oxide (Al{sub 2}O{sub 3}) of a tailor-made microstructure were produced using the ice-templating technique, which permits controlled pore formation conditions within the material. These prototypes will serve to verify aging of the new advanced target materials under irradiation with proton beams. Before this, the evaluation of their mechanical integrity was made based on the energy deposition spectra produced by FLUKA codes.

  3. A study on surface properties and high temperature oxidation behavior of ion nitrided FC-25 gray cast iron

    International Nuclear Information System (INIS)

    Hur, In Chang; Son, Kun Su; Yoon, Jae Hong; Cho, Tong Yul; Park, Bong Gyu; Kim, Hyun Soo; Kim, In Soo

    2005-01-01

    Surface properties and high temperature oxidation behavior were investigated for FC-25 Gray Cast Iron(GCI) and the ion intrided GCI(N-GCI). The GCI was pre-cleaned to improve hardness to the optimum pre-sputtering parameters with an Ar/H 2 ratio of 1/2, working pressure of 3 torr, working temperature of 550 .deg. C and working time of 1hour. The optimum nitriding conditions for the maximum hardness of 560∼575 Hv were an N 2 /H 2 ratio of 3/1, working pressure of 3 torr, and working temperature of 575 deg. C. The thickness of graphite in the GCI was increased by increasing the working temperature from 525 .deg. C to 595 .deg. C for the nitriding time of 6∼18hrs. XRD patterns showed FeO and Fe 2 O 3 peaks for both the oxidized N-GCI and GCI at temperature of 600 .deg. C and 800 .deg. C under atmospheric environment for both 24 and 60hours. At 800 .deg. C, above the Fe 4 N decomposition temperature of 680 .deg. C, the oxidation rate of N-GCI was greater than that of the GCI. The most abundant nitride, Fe 4 N, was decomposed and the nitrogen gas given off by the decomposition made the protective film porous by degassing through the film. But at 600 .deg. C, below the decomposition temperature, the degree of oxidation of N-GCI was lower than that of the GCI because the nitride film worked as protective barrier for oxidation. Finite element modeling of elastic contact wear problems was performed to demonstrate the feasibility of applying the finite element method to fretting wear problems. The elastic beam problem, with existing solutions, is treated as a numerical example. By introducing a control parameter s, which scaled up the wear constant and scaled down the cycle numbers, the algorithm was shown to greatly reduce the time required for the analysis. The work rate model was adopted in the wear model. In the three-dimensional finite element analysis, a quarterly symmetric model was used to simulate cross tubes contacting at right angles. The wear constant of

  4. Electrocatalysis on tungsten carbide

    International Nuclear Information System (INIS)

    Fleischmann, R.

    1975-01-01

    General concepts of electrocatalysis, the importance of the equilibrium rest potential and its standardization on polished WC-electrodes, the influence of oxygen in the catalysts upon the oxidation of hydrogen, and the attained results of the hydrogen oxidation on tungsten carbide are treated. (HK) [de

  5. Comparative tribological studies of duplex surface treated AISI 1045 steels fabricated by combinations of plasma nitriding and aluminizing

    International Nuclear Information System (INIS)

    Haftlang, Farahnaz; Habibolahzadeh, Ali; Sohi, Mahmoud Heydarzadeh

    2014-01-01

    Highlights: • AlN coating was applied on AISI 1045 steel via plasma nitriding and aluminizing. • Aluminizing of pre-nitrided specimen provides the highest surface hardness. • The lowest wear rate was obtained via aluminizing of pre-nitrided specimen. • Wear mechanism of the modified layer consists of oxidative and spallung wear. - Abstract: Duplex surface treatments via aluminizing and plasma nitriding were carried out on AISI 1045 steel. A number of work pieces were aluminized and subsequently plasma nitrided (Al–PN) and other work pieces were plasma nitrided and then aluminized (PN–Al). Aluminizing was carried out via pack process at 1123 K for 5 h and plasma nitriding was performed at 823 K for 5 h. The fabricated steels were characterized using scanning electron microscopy (SEM), energy dispersive X-ray spectroscopy (EDS), X-ray diffraction (XRD) and microhardness testing. Tribological behaviors of the duplex treated AISI 1045 steels were examined against tungsten carbide pin using a pin-on-disc apparatus at room temperature. The PN–Al specimen showed higher surface hardness, lower wear rate and coefficient of friction than the Al–PN one. It was noticed from the worn surfaces that tribo-oxidation plays an important role in wear behavior of both specimens

  6. Joining elements of silicon carbide

    International Nuclear Information System (INIS)

    Olson, B.A.

    1979-01-01

    A method of joining together at least two silicon carbide elements (e.g.in forming a heat exchanger) is described, comprising subjecting to sufficiently non-oxidizing atmosphere and sufficiently high temperature, material placed in space between the elements. The material consists of silicon carbide particles, carbon and/or a precursor of carbon, and silicon, such that it forms a joint joining together at least two silicon carbide elements. At least one of the elements may contain silicon. (author)

  7. Synthesis of microsphere silicon carbide/nanoneedle manganese oxide composites and their electrochemical properties as supercapacitors

    Science.gov (United States)

    Kim, Myeongjin; Yoo, Youngjae; Kim, Jooheon

    2014-11-01

    Synthesis of microsphere silicon carbide/nanoneedle MnO2 (SiC/N-MnO2) composites for use as high-performance materials in supercapacitors is reported herein. The synthesis procedure involves the initial treatment of silicon carbide (SiC) with hydrogen peroxide to obtain oxygen-containing functional groups to provide anchoring sites for connection of SiC and the MnO2 nanoneedles (N-MnO2). MnO2 nanoneedles are subsequently formed on the SiC surface. The morphology and microstructure of the as-prepared composites are characterized via X-ray diffractometry, field-emission scanning electron microscopy, thermogravimetric analysis, and X-ray photoelectron spectroscopy. The characterizations indicate that MnO2 nanoneedles are homogeneously formed on the SiC surface in the composite. The capacitive properties of the as-prepared SiC/N-MnO2 electrodes are evaluated using cyclic voltammetry, galvanostatic charge/discharge testing, and electrochemical impedance spectroscopy in a three-electrode experimental setup using a 1-M Na2SO4 aqueous solution as the electrolyte. The SiC/N-MnO2(5) electrode, for which the MnO2/SiC feed ratio is 5:1, displays a specific capacitance as high as 273.2 F g-1 at 10 mV s-1.

  8. Interfacial-Bonding-Regulated CO Oxidation over Pt Atoms Immobilized on Gas-Exfoliated Hexagonal Boron Nitride

    KAUST Repository

    Liu, Xin

    2017-10-12

    We compared the electronic structure and CO oxidation mechanisms over Pt atoms immobilized by both B-vacancies and N-vacancies on gas-exfoliated hexagonal boron nitride. We showed that chemical bonds are formed between the B atoms associated with dangling bonds around the vacancies and Pt atoms. These bonds not only alter the thermodynamics and kinetics for the aggregation and effectively immobilize Pt atoms, but also significantly change the composition and energetic distribution of the electronic states of the composites to circumvent CO poisoning and to favour coadsorption of CO and O2, which further regulates the reactions to proceed through a Langmuir-Hinshelwood mechanism. The CO oxidation over Pt atoms immobilized at N-vacancies involves formation of an intermediate with –C(O)-O−O- bonded to Pt, the generation of CO2 by peroxo O−O bond scission and the reduction of the remnant oxygen, and the calculated energy barriers are 0.49, 0.23 and 0.18 eV, respectively. Such small energy barriers are comparable to those over Pt atoms trapped at B-vacancies, showing the effectiveness of Pt/hexagonal boron nitride atomic composites as catalysts for CO oxidation. These findings also suggest the feasibility of regulating the reaction pathways over single atom catalysts via interfacial engineering.

  9. The Influence of Plasma-Based Nitriding and Oxidizing Treatments on the Mechanical and Corrosion Properties of CoCrMo Biomedical Alloy

    Science.gov (United States)

    Noli, Fotini; Pichon, Luc; Öztürk, Orhan

    2018-04-01

    Plasma-based nitriding and/or oxidizing treatments were applied to CoCrMo alloy to improve its surface mechanical properties and corrosion resistance for biomedical applications. Three treatments were performed. A set of CoCrMo samples has been subjected to nitriding at moderate temperatures ( 400 °C). A second set of CoCrMo samples was oxidized at 395 °C in pure O2. The last set of CoCrMo samples was nitrided and subsequently oxidized under the experimental conditions of previous sets (double treatment). The microstructure and morphology of the layers formed on the CoCrMo alloy were investigated by X-ray diffraction, Atomic Force Microscopy, and Scanning Electron Microscopy. In addition, nitrogen and oxygen profiles were determined by Glow Discharge Optical Emission Spectroscopy, Rutherford Backscattering Spectroscopy, Energy-Dispersive X-ray, and Nuclear Reaction Analysis. Significant improvement of the Vickers hardness of the CoCrMo samples after plasma nitriding was observed due to the supersaturated nitrogen solution and the formation of an expanded FCC γ N phase and CrN precipitates. In the case of the oxidized samples, Vickers hardness improvement was minimal. The corrosion behavior of the samples was investigated in simulated body fluid (0.9 pct NaCl solution at 37 °C) using electrochemical techniques (potentiodynamic polarization and cyclic voltammetry). The concentration of metal ions released from the CoCrMo surfaces was determined by Instrumental Neutron Activation Analysis. The experimental results clearly indicate that the CoCrMo surface subjected to the double surface treatment consisting in plasma nitriding and plasma oxidizing exhibited lower deterioration and better resistance to corrosion compared to the nitrided, oxidized, and untreated samples. This enhancement is believed to be due to the formation of a thicker and more stable layer.

  10. Tungsten carbide/porous carbon composite as superior support for platinum catalyst toward methanol electro-oxidation

    International Nuclear Information System (INIS)

    Jiang, Liming; Fu, Honggang; Wang, Lei; Mu, Guang; Jiang, Baojiang; Zhou, Wei; Wang, Ruihong

    2014-01-01

    Graphical abstract: The WC nanoparticles are well dispersed in the carbon matrix. The size of WC nanoparticles is about 30 nm. It can be concluded that tungsten carbide and carbon composite was successfully prepared by the present synthesis conditions. - Highlights: • The WC/PC composite with high specific surface area was prepared by a simple way. • The Pt/WC/PC catalyst has superior performance toward methanol electro-oxidation. • The current density for methanol electro-oxidation is as high as 595.93 A g −1 Pt. • The Pt/WC/PC catalyst shows better durability and stronger CO electro-oxidation. • The performance of Pt/WC/PC is superior to the commercial Pt/C (JM) catalyst. - Abstract: Tungsten carbide/porous carbon (WC/PC) composites have been successfully synthesized through a surfactant assisted evaporation-induced-assembly method, followed by a thermal treatment process. In particular, WC/PC-35-1000 composite with tungsten content of 35% synthesized at the carbonized temperature of 1000 °C, exhibited a specific surface area (S BET ) of 457.92 m 2 g −1 . After loading Pt nanoparticles (NPs), the obtained Pt/WC/PC-35-1000 catalyst exhibits the highest unit mass electroactivity (595.93 A g −1 Pt) toward methanol electro-oxidation, which is about 2.6 times as that of the commercial Pt/C (JM) catalyst. Furthermore, the Pt/WC/PC-35-1000 catalyst displays much stronger resistance to CO poisoning and better durability toward methanol electrooxidation compared with the commercial Pt/C (JM) catalyst. The high electrocatalytic activity, strong poison-resistivity and good stability of Pt/WC/PC-35-1000 catalyst are attributed to the porous structures and high specific surface area of WC/PC support could facilitate the rapid mass transportation. Moreover, synergistic effect between WC and Pt NPs is favorable to the higher catalytic performance

  11. Tungsten carbide/porous carbon composite as superior support for platinum catalyst toward methanol electro-oxidation

    Energy Technology Data Exchange (ETDEWEB)

    Jiang, Liming [School of Chemical Engineering and Technology, Harbin Institute of Technology, Harbin 150001 (China); Fu, Honggang, E-mail: fuhg@vip.sina.com [School of Chemical Engineering and Technology, Harbin Institute of Technology, Harbin 150001 (China); Key Laboratory of Functional Inorganic Material Chemistry, Heilongjiang University, Harbin 150080 (China); Wang, Lei; Mu, Guang; Jiang, Baojiang; Zhou, Wei; Wang, Ruihong [Key Laboratory of Functional Inorganic Material Chemistry, Heilongjiang University, Harbin 150080 (China)

    2014-01-01

    Graphical abstract: The WC nanoparticles are well dispersed in the carbon matrix. The size of WC nanoparticles is about 30 nm. It can be concluded that tungsten carbide and carbon composite was successfully prepared by the present synthesis conditions. - Highlights: • The WC/PC composite with high specific surface area was prepared by a simple way. • The Pt/WC/PC catalyst has superior performance toward methanol electro-oxidation. • The current density for methanol electro-oxidation is as high as 595.93 A g{sup −1} Pt. • The Pt/WC/PC catalyst shows better durability and stronger CO electro-oxidation. • The performance of Pt/WC/PC is superior to the commercial Pt/C (JM) catalyst. - Abstract: Tungsten carbide/porous carbon (WC/PC) composites have been successfully synthesized through a surfactant assisted evaporation-induced-assembly method, followed by a thermal treatment process. In particular, WC/PC-35-1000 composite with tungsten content of 35% synthesized at the carbonized temperature of 1000 °C, exhibited a specific surface area (S{sub BET}) of 457.92 m{sup 2} g{sup −1}. After loading Pt nanoparticles (NPs), the obtained Pt/WC/PC-35-1000 catalyst exhibits the highest unit mass electroactivity (595.93 A g{sup −1} Pt) toward methanol electro-oxidation, which is about 2.6 times as that of the commercial Pt/C (JM) catalyst. Furthermore, the Pt/WC/PC-35-1000 catalyst displays much stronger resistance to CO poisoning and better durability toward methanol electrooxidation compared with the commercial Pt/C (JM) catalyst. The high electrocatalytic activity, strong poison-resistivity and good stability of Pt/WC/PC-35-1000 catalyst are attributed to the porous structures and high specific surface area of WC/PC support could facilitate the rapid mass transportation. Moreover, synergistic effect between WC and Pt NPs is favorable to the higher catalytic performance.

  12. Gamma scanning of mixed carbide and oxide fuel pins irradiated in FBTR

    International Nuclear Information System (INIS)

    Jayaraj, V.V.; Padalakshmi, M.; Ulaganathan, T.; Venkiteswaran, C.N.; Divakar, R.; Joseph, Jojo; Bhaduri, A.K.

    2016-01-01

    Fission in nuclear fuels results in a number of fission products that are gamma emitters in the energy range of 100 keV to 3 MeV. The gamma emitting fission products are therefore amenable for detection by gamma detectors. Assessment of the fission product distribution and their migration behavior through gamma scanning is important for characterizing the in reactor behavior of the fuel. Gamma scanning is an important non destructive technique used to evaluate the behavior of irradiated fuels. As a part of Post Irradiation Examinations (PIE), axial gamma scanning has been carried out on selected fuel pins of the FBTR Mark I mixed carbide fuel sub-assemblies and PFBR MOX test fuel sub-assembly irradiated in FBTR. This paper covers the results of gamma scanning and correlation of gamma scanning results with other PIE techniques

  13. Research status in ultra-precision machining of silicon carbide parts by oxidation-assisted polishing

    Directory of Open Access Journals (Sweden)

    Xinmin SHEN

    2016-10-01

    Full Text Available Oxidation-assisted polishing is an important machining method for obtaining SiC parts with high precision. Through plasma oxidation, thermal oxidation, and anodic oxidation, soft oxide can be obtained on the RS-SiC substrate. With the assistance of abrasive polishing to remove the oxide rapidly, the material removal rate can be increased and the surface quality can be improved. The research results indicate that the surface roughness root-mean-square (RMS and roughness-average (Ra can reach 0.626 nm and 0.480 nm by plasma oxidation-assisted polishing; in thermal oxidation-assisted polishing, the RMS and Ra can be 0.920 nm and 0.726 nm; in anodic oxidation, the calculated oxidation rate is 5.3 nm/s based on Deal-Grove model, and the RMS and Ra are 4.428 nm and 3.453 nm respectively in anodic oxidation-assisted polishing. The oxidation-assisted polishing can be propitious to improve the process level in machining RS-SiC, which would promote the application of SiC parts in optics and ceramics fields.

  14. Catalytic activity of tungsten carbide-carbon (WC@C) core-shell structured for ethanol electro-oxidation

    Energy Technology Data Exchange (ETDEWEB)

    Singla, Gourav, E-mail: gsinghla@gmail.com; Singh, K., E-mail: kusingh@thapar.edu; Pandey, O.P., E-mail: oppandey@thapar.edu

    2017-01-15

    In this study, carbon coated WC (WC@C) was synthesized through solvothermal reactions in the presence of reducing agent magnesium (Mg) by employing tungsten oxide (WO{sub 3}) as a precursor, acetone (C{sub 3}H{sub 6}O) as a carbon source. The formation of WC@C nano particles is confirmed by X-ray diffraction and Transmission electron microscopy. The thermal stability of the synthesized powder examined in air shows its stability up to 550 °C. In this method, in-situ produced outer carbon layer increase the surface area of materials which is 52.6 m{sup 2} g{sup −1} with pore volume 0.213 cm{sup 3} g{sup −1}. The Electrocatalytic activity of ethanol oxidation on a synthesized sample with and without Pt nano particles have been investigated using cyclic voltammetry (CV). The CV results show the enhancement in oxidation stability of WC@C in acidic media as well as better CO-tolerance for ethanol oxidation after the deposition of Pt nanoparticles as compared to without Pt nano particles. - Highlights: • Tungsten carbide nano powder was synthesized using acetone as carbon source. • In-situ produced outer carbon layer increase the surface area of materials. • Mesoporous WC with surface areas 52.6 m{sup 2}/g obtained. • Pt modified WC powder showed higher electrochemical stability. • Better CO-tolerance for ethanol oxidation after the deposition of Pt nanoparticles.

  15. Electro-optic and magneto-dielectric properties of multifunctional nitride and oxide materials

    Science.gov (United States)

    Dixit, Ambesh

    Materials that simultaneously exhibit different physical properties provide a rich area of research leading to the development of new devices. For example, materials having a strong coupling between charge and spin degrees of freedom are essential to realizing a new class of devices referred to generally as spintronics. However, these multifunctional systems pose new scientific challenges in understanding the origin and mechanisms for cross-control of different functionalities. The core of this Ph.D. dissertation deals with multifunctional nitride and oxide compound semiconductors as well as multiferroic magnetic oxide systems by investigating structural, optical, electrical, magnetic, magnetodielectric and magnetoelectric properties. Thin films of InN nitride compound semiconductors and closely related alloys have been investigated to understand the effects of intrinsic defects on the materials properties while considering possible applications of highly degenerate InN thin films. As grown rf sputtered InN films on c-axis (0001) sapphire exhibit highly degenerate n-type behaviour due to oxygen defects introduced during growth. The effect of oxygen in InN matrix has been further investigated by intentionally adding oxygen into the films. These studies confirm that oxygen is one of the main sources of donor electrons in degenerate InN. Above some critical concentration of oxygen, secondary phases of In 2O3 and In-O-N complexes were formed. It was also possible to tune the carrier concentration to produce changes in the plasmon frequency, which varied from 0.45 eV to 0.8 eV. This characteristic energy scale suggests that these highly degenerate InN thin films could be used for thermophotovoltaic cells, optical filters, and other IR electro-optic applications. To probe the magnetism in transition metal doped InN system, In 0.98Cr0.02N and In0.95Cr0.05N thin films were fabricated. Our results suggest that these films develop ferromagnetic order above room temperature

  16. Microstructure and oxidative degradation behavior of silicon carbide fiber Hi-Nicalon type S

    International Nuclear Information System (INIS)

    Takeda, M.; Urano, A.; Sakamoto, J.; Imai, Y.

    1998-01-01

    Polycarbosilane-derived SiC fibers, Nicalon, Hi-Nicalon, and Hi-Nicalon type S were exposed for 1 to 100 h at 1273-1773 K in air. Oxide layer growth and tensile strength change of these fibers were examined after the oxidation test. As a result, three types of SiC fibers decreased their strength as oxide layer thickness increased. Fracture origins were determined at near the oxide layer-fiber interface. Adhered fibers arised from softening of silicon oxide at high temperature were also observed. In this study, Hi-Nicalon type S showed better oxidation resistance than other polycarbosilane-derived SiC fibers after 1673 K or higher temperature exposure in air for 10 h. This result was explained by the poreless silicon oxide layer structure of Hi-Nicalon type S. (orig.)

  17. Formation of silicon carbide by laser ablation in graphene oxide-N-methyl-2-pyrrolidone suspension on silicon surface

    Science.gov (United States)

    Jaleh, Babak; Ghasemi, Samaneh; Torkamany, Mohammad Javad; Salehzadeh, Sadegh; Maleki, Farahnaz

    2018-01-01

    Laser ablation of a silicon wafer in graphene oxide-N-methyl-2-pyrrolidone (GO-NMP) suspension was carried out with a pulsed Nd:YAG laser (pulse duration = 250 ns, wavelength = 1064 nm). The surface of silicon wafer before and after laser ablation was studied using optical microscopy, scanning electron microscopy (SEM) and energy dispersive X-ray analysis (EDX). The results showed that the ablation of silicon surface in liquid by pulsed laser was done by the process of melt expulsion under the influence of the confined plasma-induced pressure or shock wave trapped between the silicon wafer and the liquid. The X-ray diffraction‌ (XRD) pattern of Si wafer after laser ablation showed that 4H-SiC layer is formed on its surface. The formation of the above layer was also confirmed by Raman spectroscopy, and X-ray photoelectron spectroscopy‌ (XPS), as well as EDX was utilized. The reflectance of samples decreased with increasing pulse energy. Therefore, the morphological alteration and the formation of SiC layer at high energy increase absorption intensity in the UV‌-vis regions. Theoretical calculations confirm that the formation of silicon carbide from graphene oxide and silicon wafer is considerably endothermic. Development of new methods for increasing the reflectance without causing harmful effects is still an important issue for crystalline Si solar cells. By using the method described in this paper, the optical properties of solar cells can be improved.

  18. Oxidation Kinetics of Chemically Vapor-Deposited Silicon Carbide in Wet Oxygen

    Science.gov (United States)

    Opila, Elizabeth J.

    1994-01-01

    The oxidation kinetics of chemically vapor-deposited SiC in dry oxygen and wet oxygen (P(sub H2O) = 0.1 atm) at temperatures between 1200 C and 1400 C were monitored using thermogravimetric analysis. It was found that in a clean environment, 10% water vapor enhanced the oxidation kinetics of SiC only very slightly compared to rates found in dry oxygen. Oxidation kinetics were examined in terms of the Deal and Grove model for oxidation of silicon. It was found that in an environment containing even small amounts of impurities, such as high-purity Al2O3 reaction tubes containing 200 ppm Na, water vapor enhanced the transport of these impurities to the oxidation sample. Oxidation rates increased under these conditions presumably because of the formation of less protective sodium alumino-silicate scales.

  19. Ultra-high temperature oxidation behavior of chemical vapor deposited silicon carbide layers

    International Nuclear Information System (INIS)

    Goto, Takashi

    2003-01-01

    The active oxidation, passive oxidation and bubble formation of CVD SiC were studied in O 2 and CO 2 at temperatures from 1650 to 2000 K. The active oxidation rates in O 2 increased with increasing oxygen partial pressure (P o2 ); however, those in CO 2 showed the maxima at specific P o2 . The passive oxidation kinetics in O 2 were either linear-parabolic or parabolic depending on temperature and P o2 , whereas that in CO 2 was always parabolic. The activation energies for the parabolic oxidation in O 2 and CO 2 were 210 and 150 kJ/mol, respectively, suggesting different rate-determining process between these atmospheres. The bubble formation was controlled by temperature and P o2 being independent of oxidant gas species. (author)

  20. Transparent conducting oxide clad limited area epitaxy semipolar III-nitride laser diodes

    KAUST Repository

    Myzaferi, A.; Reading, A. H.; Cohen, D. A.; Farrell, R. M.; Nakamura, S.; Speck, J. S.; DenBaars, S. P.

    2016-01-01

    The bottom cladding design of semipolar III-nitride laser diodes is limited by stress relaxation via misfit dislocations that form via the glide of pre-existing threading dislocations (TDs), whereas the top cladding is limited by the growth time

  1. Fabrication of a silicon oxide stamp by edge lithography reinforced with silicon nitride for nanoimprint lithography

    NARCIS (Netherlands)

    Zhao, Yiping; Berenschot, Johan W.; de Boer, M.; de Boer, Meint J.; Jansen, Henricus V.; Tas, Niels Roelof; Huskens, Jurriaan; Elwenspoek, Michael Curt

    2008-01-01

    The fabrication of a stamp reinforced with silicon nitride is presented for its use in nanoimprint lithography. The fabrication process is based on edge lithography using conventional optical lithography and wet anisotropic etching of 110 silicon wafers. SiO2 nano-ridges of 20 nm in width were

  2. Nitride stabilized core/shell nanoparticles

    Science.gov (United States)

    Kuttiyiel, Kurian Abraham; Sasaki, Kotaro; Adzic, Radoslav R.

    2018-01-30

    Nitride stabilized metal nanoparticles and methods for their manufacture are disclosed. In one embodiment the metal nanoparticles have a continuous and nonporous noble metal shell with a nitride-stabilized non-noble metal core. The nitride-stabilized core provides a stabilizing effect under high oxidizing conditions suppressing the noble metal dissolution during potential cycling. The nitride stabilized nanoparticles may be fabricated by a process in which a core is coated with a shell layer that encapsulates the entire core. Introduction of nitrogen into the core by annealing produces metal nitride(s) that are less susceptible to dissolution during potential cycling under high oxidizing conditions.

  3. Enhancement of corrosion resistance for plasma nitrided AISI 4140 steel by plain air plasma post-oxidizing

    Energy Technology Data Exchange (ETDEWEB)

    Wu, Jiqiang; Liu, Han; Ye, Xuemei [Jiangsu Key Laboratory of Materials Surface Technology, Changzhou University, Changzhou 213164 (China); Chai, Yating [Materials Research and Education Center, Auburn University, AL 36849 (United States); Hu, Jing, E-mail: jinghoo@126.com [Jiangsu Key Laboratory of Materials Surface Technology, Changzhou University, Changzhou 213164 (China); Materials Research and Education Center, Auburn University, AL 36849 (United States)

    2015-05-25

    Highlights: • Plain air was primarily used for plasma post-oxidation for AISI 4140 steel. • A thin iron oxide layer composed of Fe{sub 3}O{sub 4} to Fe{sub 2}O{sub 3} was formed on top of the compound layer. • The ratio of Fe{sub 3}O{sub 4} to Fe{sub 2}O{sub 3} was closely related to the post-oxidizing conditions. • Post-oxidizing at 673 K for 60 min brought out highest ratio of Fe{sub 3}O{sub 4} to Fe{sub 2}O{sub 3} and optimum corrosion resistance. - Abstract: Plasma post-oxidizing was conducted immediately after plasma nitriding in the same equipment for AISI 4140 steel, and plain air was used as the oxygen bearing gas. The cross-sectional microstructures of the treated samples were observed by optical metallography and scanning electron microcopy (SEM), and the thickness of compound layer was measured accordingly. The phases were determined by X-ray diffraction (XRD), corrosion resistance was evaluated by electrochemical polarization, and the surface morphology before and after polarization test was also observed by SEM. Meanwhile, standard Gibbs free energy of the oxidation reactions existed in Fe–O system was calculated. The results show that a thin iron oxide layer composed of magnetite (Fe{sub 3}O{sub 4}) and hematite (Fe{sub 2}O{sub 3}) is formed on top of the compound layer during plasma post-oxidizing process, and the ratio of magnetite (Fe{sub 3}O{sub 4}) to hematite (Fe{sub 2}O{sub 3}) is depended on plasma post-oxidizing temperature and time. Highest ratio of Fe{sub 3}O{sub 4} to Fe{sub 2}O{sub 3} is obtained while post-oxidizing at 673 K for 60 min due to lower standard Gibbs free energy and appropriate forming rate for the formation of Fe{sub 3}O{sub 4} at this temperature. The thin oxide layer brings out significant enhancement of corrosion resistance, especially at higher ratios of Fe{sub 3}O{sub 4} to Fe{sub 2}O{sub 3}, due to the dense and adherent characteristic of Fe{sub 3}O{sub 4} oxide. Surface images of the post-oxidizing specimen

  4. Pt atoms stabilized on hexagonal boron nitride as efficient single-atom catalysts for CO oxidation: A first-principles investigation

    KAUST Repository

    Liu, Xin; Duan, Ting; Meng, Changgong; Han, Yu

    2015-01-01

    Taking CO oxidation as a probe, we investigated the electronic structure and reactivity of Pt atoms stabilized by vacancy defects on hexagonal boron nitride (h-BN) by first-principles-based calculations. As a joint effect of the high reactivity

  5. Initial stages of oxidation of near-stoichiometric titanium carbide at low oxygen pressures

    International Nuclear Information System (INIS)

    Shabalin, I.L.; Vishnyakov, V.M.; Bull, D.J.; Keens, S.G.; Yamshchikov, L.F.; Shabalin, L.I.

    2009-01-01

    A novel approach to the oxidation mechanism of near-stoichiometric TiC is presented. It is confirmed by consideration of solid-state chemical kinetics model and electron microscopy observations in parallel. At low oxygen pressures and moderate temperatures the initial step of the process is connected with the dissolution of oxygen and subsequent decomposition of oxygen-oversaturated oxycarbide, which ultimately results in the nucleation of oxide phase, in particular anatase, belike stabilised by residual carbon. An anatase-rutile transformation is concurrent with deeper carbon burn-off in the oxide scale, which sinters at higher temperatures. This mechanism shifts the process to a gas diffusion regime, governed by the scale permeability, but determined by solid-state diffusion that is reflected in the kinetics, as further temperature increase is accompanied by a decrease of the oxidation rate, so in general the process is characterised by the negative value of apparent activation energy

  6. Boron nitride coated uranium dioxide and uranium dioxide-gadolinium oxide fuels

    Energy Technology Data Exchange (ETDEWEB)

    Gunduz, G [Department of Chemical Engineering, Middle East Technical Univ., Ankara (Turkey); Uslu, I; Tore, C; Tanker, E [Turkiye Atom Enerjisi Kurumu, Ankara (Turkey)

    1997-08-01

    Pure Urania and Urania-gadolinia (5 and 10%) fuels were produced by sol-gel technique. The sintered fuel pellets were then coated with boron nitride (BN). This is achieved through chemical vapor deposition (CVD) using boron trichloride and ammonia. The coated samples were sintered at 1600 K. The analyses under scanning electron microscope (SEM) showed a variety of BN structures, mainly platelike and rodlike structures were observed. Burnup calculations by using WIMSD4 showed that BN coated and gadolinia containing fuels have larger burnups than other fuels. The calculations were repeated at different pitch distances. The change of the radius of the fuel pellet or the moderator/fuel ratio showed that BN coated fuel gives the highest burnups at the present design values of a PWR. Key words: burnable absorber, boron nitride, gadolinia, CVT, nuclear fuel. (author). 32 refs, 14 figs.

  7. Boron nitride coated uranium dioxide and uranium dioxide-gadolinium oxide fuels

    International Nuclear Information System (INIS)

    Gunduz, G.; Uslu, I.; Tore, C.; Tanker, E.

    1997-01-01

    Pure Urania and Urania-gadolinia (5 and 10%) fuels were produced by sol-gel technique. The sintered fuel pellets were then coated with boron nitride (BN). This is achieved through chemical vapor deposition (CVD) using boron trichloride and ammonia. The coated samples were sintered at 1600 K. The analyses under scanning electron microscope (SEM) showed a variety of BN structures, mainly platelike and rodlike structures were observed. Burnup calculations by using WIMSD4 showed that BN coated and gadolinia containing fuels have larger burnups than other fuels. The calculations were repeated at different pitch distances. The change of the radius of the fuel pellet or the moderator/fuel ratio showed that BN coated fuel gives the highest burnups at the present design values of a PWR. Key words: burnable absorber, boron nitride, gadolinia, CVT, nuclear fuel. (author). 32 refs, 14 figs

  8. Robust non-carbon titanium nitride nanotubes supported Pt catalyst with enhanced catalytic activity and durability for methanol oxidation reaction

    International Nuclear Information System (INIS)

    Xiao, Yonghao; Zhan, Guohe; Fu, Zhenggao; Pan, Zhanchang; Xiao, Chumin; Wu, Shoukun; Chen, Chun; Hu, Guanghui; Wei, Zhigang

    2014-01-01

    By the combination of solvothermal alcoholysis and post-nitriding method, titanium nitride nanotubes (TiN NTs), with high surface area, hollow and interior porous structure are prepared successfully and used at a support for Pt nanoparticles. The TiN NTs supported Pt (Pt/TiN NTs) catalyst displays enhanced activity and durability towards methanol oxidation reaction (MOR) compared with the commercial Pt/C (E-TEK) catalyst. X ray diffraction (XRD), nitrogen adsorption/desorption, transmission electron microscopy (TEM) and X-ray photoelectron spectroscopy (XPS) measurements are performed to investigate the physicochemical properties of the synthesized catalyst. SEM and TEM images reveal that the wall of the TiN NTs is porous and Pt nanoparticles supported on the dendritic TiN nanocrystals exhibit small size and good dispersion. Effects of inherent corrosion-resistant, tubular and porous nanostructures and electron transfer due to the strong metal–support interactions of TiN NTs contribute to the enhanced catalytic activity and stability of Pt/TiN NTs towards the MOR

  9. Porous silicon carbide (SIC) semiconductor device

    Science.gov (United States)

    Shor, Joseph S. (Inventor); Kurtz, Anthony D. (Inventor)

    1996-01-01

    Porous silicon carbide is fabricated according to techniques which result in a significant portion of nanocrystallites within the material in a sub 10 nanometer regime. There is described techniques for passivating porous silicon carbide which result in the fabrication of optoelectronic devices which exhibit brighter blue luminescence and exhibit improved qualities. Based on certain of the techniques described porous silicon carbide is used as a sacrificial layer for the patterning of silicon carbide. Porous silicon carbide is then removed from the bulk substrate by oxidation and other methods. The techniques described employ a two-step process which is used to pattern bulk silicon carbide where selected areas of the wafer are then made porous and then the porous layer is subsequently removed. The process to form porous silicon carbide exhibits dopant selectivity and a two-step etching procedure is implemented for silicon carbide multilayers.

  10. Development of Plasma-Sprayed Molybdenum Carbide-Based Anode Layers with Various Metal Oxides for SOFC

    Science.gov (United States)

    Faisal, N. H.; Ahmed, R.; Katikaneni, S. P.; Souentie, S.; Goosen, M. F. A.

    2015-12-01

    Air plasma-sprayed (APS) coatings provide an ability to deposit a range of novel fuel cell materials at competitive costs. This work develops three separate types of composite anodes (Mo-Mo2C/Al2O3, Mo-Mo2C/ZrO2, Mo-Mo2C/TiO2) using a combination of APS process parameters on Hastelloy®X for application in intermediate temperature proton-conducting solid oxide fuel cells. Commercially available carbide of molybdenum powder catalyst (Mo-Mo2C) and three metal oxides (Al2O3, ZrO2, TiO2) was used to prepare three separate composite feedstock powders to fabricate three different anodes. Each of the modified composition anode feedstock powders included a stoichiometric weight ratio of 0.8:0.2. The coatings were characterized by scanning electron microscopy, energy dispersive spectroscopy, x-ray diffraction, nanoindentation, and conductivity. We report herein that three optimized anode layers of thicknesses between 200 and 300 µm and porosity as high as 20% for Mo-Mo2C/Al2O3 (250-µm thick) and Mo-Mo2C/TiO2 (300 µm thick) and 17% for Mo-Mo2C/ZrO2 (220-µm thick), controllable by a selection of the APS process parameters with no addition of sacrificial pore-forming material. The nanohardness results indicate the upper layers of the coatings have higher values than the subsurface layers in coatings with some effect of the deposition on the substrate. Mo-Mo2C/ZrO2 shows high electrical conductivity.

  11. Mechanisms of hydrogen retention in metallic beryllium and beryllium oxide and properties of ion-induced beryllium nitride

    International Nuclear Information System (INIS)

    Oberkofler, Martin

    2011-01-01

    In the framework of this thesis laboratory experiments on atomically clean beryllium surfaces were performed. They aim at a basic understanding of the mechanisms occurring upon interaction of a fusion plasma with a beryllium first wall. The retention and the temperature dependent release of implanted deuterium ions are investigated. An atomistic description is developed through simulations and through the comparison with calculations based on density functional theory. The results of these investigations are compared to the behaviour of hydrogen upon implantation into thermally grown beryllium oxide layers. Furthermore, beryllium nitride is produced by implantation of nitrogen into metallic beryllium and its properties are investigated. The results are interpreted with regard to the use of beryllium in a fusion reactor. (orig.)

  12. Influence of post-annealing on the electrical properties of metal/oxide/silicon nitride/oxide/silicon capacitors for flash memories

    International Nuclear Information System (INIS)

    Kim, Hee Dong; An, Ho-Myoung; Kim, Kyoung Chan; Seo, Yu Jeong; Kim, Tae Geun

    2008-01-01

    We report the effect of post-annealing on the electrical properties of metal/oxide/silicon nitride/oxide/silicon (MONOS) capacitors. Four samples, namely as-deposited and annealed at 750, 850 and 950 °C for 30 s in nitrogen ambient by a rapid thermal process, were prepared and characterized for comparison. The best performance with the largest memory window of 4.4 V and the fastest program speed of 10 ms was observed for the sample annealed at 850 °C. In addition, the highest traps density of 6.84 × 10 18 cm −3 was observed with ideal trap distributions for the same sample by capacitance–voltage (C–V) measurement. These results indicate that the memory traps in the ONO structure can be engineered by post-annealing to improve the electrical properties of the MONOS device

  13. Standard test methods for chemical, mass spectrometric, and spectrochemical analysis of nuclear-grade aluminum oxide and aluminum oxide-boron carbide composite pellets

    CERN Document Server

    American Society for Testing and Materials. Philadelphia

    1994-01-01

    1.1 These test methods cover procedures for the chemical, mass spectrometric, and spectrochemical analysis of nuclear-grade aluminum oxide and aluminum oxide-boron carbide composite pellets to determine compliance with specifications. 1.2 The analytical procedures appear in the following order: Sections Boron by Titrimetry 7 to 13 Separation of Boron for Mass Spectrometry 14 to 19 Isotopic Composition by Mass Spectrometry 20 to 23 Separation of Halides by Pyrohydrolysis 24 to 27 Fluoride by Ion-Selective Electrode 28 to 30 Chloride, Bromide, and Iodide by Amperometric Microtitrimetry 31 to 33 Trace Elements by Emission Spectroscopy 34 to 46 1.3 The values stated in SI units are to be regarded as the standard. 1.4 This standard does not purport to address all of the safety concerns, if any, associated with its use. It is the responsibility of the user of this standard to establish appropriate safety and health practices and determine the applicability of regulatory limitations prior to use. (F...

  14. Plasma-spray synthesis and characterization of ti-based nitride and oxide nanogranules

    Energy Technology Data Exchange (ETDEWEB)

    Antipas, Georgios S.E., E-mail: gantipas@metal.ntua.gr [School of Mining Engineering and Metallurgy, National Technical University of Athens, Athens (Greece)

    2014-09-15

    The synthesis of nanosized Ti-based nanogranules via plasma spraying is reported. The synthesis route involved use of both nitrogen and oxygen gases with varying results. In the case of nitrogen, a mixture of titanium nitrides were produced, yielding both the Ti2N and the sub-stoichiometric TiN0.61 compounds. In the case of oxygen, both the stoichiometric rutile and TiO ceramic phases were indexed. Based on EDS analysis, even fractional oxygen concentrations caused tungsten impurities which originated from the cathode electrode. The method yielded particle mass median sizes of the order of 15nm and the smallest particles detected were 5nm. (author)

  15. The oxidative corrosion of carbide inclusions at the surface of uranium metal during exposure to water vapour

    International Nuclear Information System (INIS)

    Scott, T.B.; Petherbridge, J.R.; Harker, N.J.; Ball, R.J.; Heard, P.J.; Glascott, J.; Allen, G.C.

    2011-01-01

    Highlights: → High resolution imagery (FIB, SEM and SIMS) of carbide inclusions in uranium metal. → Real time images following the reaction of the carbide inclusions with water vapour. → Shown preferential consumption of carbide over that of the bulk metal. → Quantity of impurities in the metal therefore seriously influence reaction rate. → Metal purity must be considered when storing uranium in air or moist conditions. - Abstract: The reaction between uranium and water vapour has been well investigated, however discrepancies exist between the described kinetic laws, pressure dependence of the reaction rate constant and activation energies. Here this problem is looked at by examining the influence of impurities in the form of carbide inclusions on the reaction. Samples of uranium containing 600 ppm carbon were analysed during and after exposure to water vapour at 19 mbar pressure, in an environmental scanning electron microscope (ESEM) system. After water exposure, samples were analysed using secondary ion mass spectrometry (SIMS), focused ion beam (FIB) imaging and sectioning and transmission electron microscopy (TEM) with X-ray diffraction (micro-XRD). The results of the current study indicate that carbide particles on the surface of uranium readily react with water vapour to form voluminous UO 3 .xH 2 O growths at rates significantly faster than that of the metal. The observation may also have implications for previous experimental studies of uranium-water interactions, where the presence of differing levels of undetected carbide may partly account for the discrepancies observed between datasets.

  16. Copper atoms embedded in hexagonal boron nitride as potential catalysts for CO oxidation: A first-principles investigation

    KAUST Repository

    Liu, Xin

    2014-01-01

    We addressed the electronic structure of Cu atoms embedded in hexagonal boron nitride (h-BN) and their catalytic role in CO oxidation by first-principles-based calculations. We showed that Cu atoms prefer to bind directly with the localized defects on h-BN, which act as strong trapping sites for Cu atoms and inhibit their clustering. The strong binding of Cu atoms at boron vacancy also up-shifts the energy level of Cu-d states to the Fermi level and promotes the formation of peroxide-like intermediate. CO oxidation over Cu atoms embedded in h-BN would proceed through the Langmuir-Hinshelwood mechanism with the formation of a peroxide-like complex by reaction of coadsorbed CO and O2, with the dissociation of which the a CO2 molecule and an adsorbed O atom are formed. Then, the embedded Cu atom is regenerated by the reaction of another gaseous CO with the remnant O atom. The calculated energy barriers for the formation and dissociation of peroxide complex and regeneration of embedded Cu atoms are as low as 0.26, 0.11 and 0.03 eV, respectively, indicating the potential high catalytic performance of Cu atoms embedded in h-BN for low temperature CO oxidation. © the Partner Organisations 2014.

  17. Growth of aluminum oxide on silicon carbide with an atomically sharp interface

    DEFF Research Database (Denmark)

    Silva, Ana Gomes; Pedersen, Kjeld; Li, Zheshen

    2017-01-01

    this system up to around 600 °C (all in ultrahigh vacuum). This converts all the SiO2 into a uniform layer of Al2O3 with an atomically sharp interface between the Al2O3 and the Si surface. In the present work, the same procedures are applied to form Al2O3 on a SiC film grown on top of Si (111). The results...... indicate that a similar process, resulting in a uniform layer of 1-2 nm of Al2O3 with an atomically sharp Al2O3/SiC interface, also works in this case.......The development of SiC wafers with properties suitable for electronic device fabrication is now well established commercially. A critical issue for developing metal-oxide-semiconductor field effect transistor devices of SiC is the choice of dielectric materials for surface passivation...

  18. Synthesis of full-density nanocrystalline tungsten carbide by reduction of tungstic oxide at room temperature

    International Nuclear Information System (INIS)

    El-Eskandarany, M.S.; Omori, M.; Ishikuro, M.; Konno, T.J.; Takada, K.; Sumiyama, K.; Hirai, T.; Suzuki, K.

    1996-01-01

    Among the hard alloys, WC alloys find wide industrial applications as tips for cutting tools and wear-resistant parts. Their intrinsic resistance to oxidation and corrosion at high temperatures also makes them desirable as a protective coating for devices at elevated temperatures. In the industrial scale of production, WC is prepared by a direct union of the elements at a temperature of 3,273 to 3,473 K. Accordingly, the high cost of preparation is a disadvantage of this process. Here, the authors report a novel technique for preparing a large amount of WC powder using a simple method. This process is based on mechanical solid-state reduction (MSSR) followed y solid-state reaction (SSR) during room-temperature ball milling (a high energy ball mill, Fritsch P6, was used at a rotation speed of 4.2 s -1 ) of a mixture of WO 3 , Mg, and C powders

  19. Stressing effects on the charge trapping of silicon oxynitride prepared by thermal oxidation of LPCVD Si-rich silicon nitride

    International Nuclear Information System (INIS)

    Choi, H.Y.; Wong, H.; Filip, V.; Sen, B.; Kok, C.W.; Chan, M.; Poon, M.C.

    2006-01-01

    It was recently found that the silicon oxynitride prepared by oxidation of silicon-rich silicon nitride (SRN) has several important features. The high nitrogen and extremely low hydrogen content of this material allows it to have a high dielectric constant and a low trap density. The present work investigates in further detail the electrical reliability of this kind of gate dielectric films by studying the charge trapping and interface state generation induced by constant current stressing. Capacitance-voltage (C-V) measurements indicate that for oxidation temperatures of 850 and 950 deg. C, the interface trap generation is minimal because of the high nitrogen content at the interface. At a higher oxidation temperature of 1050 deg. C, a large flatband shift is found for constant current stressing. This observation can be explained by the significant reduction of the nitrogen content and the phase separation effect at this temperature as found by X-ray photoelectron spectroscopy study. In addition to the high nitrogen content, the Si atoms at the interface exist in the form of random bonding to oxygen and nitrogen atoms for samples oxidized at 850 and 950 deg. C. This structure reduces the interface bonding constraint and results in the low interface trap density. For heavily oxidized samples the trace amount of interface nitrogen atoms exist in the form of a highly constraint SiN 4 phase and the interface oxynitride layer is a random mixture of SiO 4 and SiN 4 phases, which consequently reduces the reliability against high energy electron stressing

  20. Ion nitriding post-oxidation as an alternative technique to electrolytic chromium; Nitruracion post-oxidacion ionica como tecnica alternativa al cromado electrolitico

    Energy Technology Data Exchange (ETDEWEB)

    Diaz-Guillen, J. C.; Granda-Gutierrez, E.E.; Campa-Castilla, A.; Perez-Aguilar, S.I.; Garza-Gomez, A.; Candelas-Ramirez, J.; Mendez-Mendez, R. [COMIMSA. Corporacion Mexicana de Investigacion en Materiales S.A. de C.V., Saltillo, Coahuila (Mexico)]. E-mail: jcarlos@comimsa.com

    2010-11-15

    The effect of temperature and processing time during post-oxidation on hardness and corrosion resistance of AISI 1045 samples treated through nitriding and post-oxidation in a pulsed plasma discharge is evaluated in this paper. Also, a comparative analysis of the mechanical properties obtained with the dual nitriding - post oxidation process versus those properties of typical hard chrome coatings was performed with an aim to propose an alternative technique to the processes of galvanic coatings. The latter revealed that the process of ion nitriding and post-oxidation provides similar properties in hardness and improves the corrosion resistance compared to the hard chrome case. It is conclude that the technique of ion nitriding and post-oxidation is a non environmental harmful technology with strong potential to replace highly polluting electroplating techniques for application of hard chrome coatings. [Spanish] En el presente trabajo se evalua el efecto del tiempo y la temperatura de post-oxidacion sobre las propiedades de dureza y resistencia a la corrosion de muestras de acero AISI 1045 sometido al proceso de nitruracion post-oxidacion ionica en plasmas pulsados. Asi mismo, con el objetivo de fundamentar la propuesta de utilizacion de la nitruracion post-oxidacion ionica como una tecnica alternativa a los procesos galvanicos para aplicacion de recubrimientos de cromo duro, se realizo un analisis comparativo de propiedades, evidenciando que, mediante el proceso nitruracion postoxidacion ionica, es posible obtener caracteristicas similares en dureza y mejores en resistencia a la corrosion que las tipicas obtenidas para el cromo duro. Los resultados obtenidos permiten postular una tecnica que no dana al medio ambiente, como lo es la nitruracion post-oxidacion ionica, como candidata potencial para sustituir las tecnicas galvanicas altamente contaminantes para aplicacion de cromo duro.

  1. Physical and Chemical Properties of TiOxNy Prepared by Low-Temperature Oxidation of Ultrathin Metal Nitride Directly Deposited on SiO2

    Institute of Scientific and Technical Information of China (English)

    HAN Yue-Ping; HAN Yan

    2009-01-01

    Physical and chemical properties of titanium oxynitride (TiOxNy) formed by low-temperature oxidation of titanium nitride (TIN) layer are investigated for advanced metal-oxide--semiconductor (MOS) gate dielectric application.TiOx Ny exhibits polycrystalline properties after the standard thermal process for MOS device fabrication,showing the preferred orientation at [200].Superior electrical properties of TiOxNy can be maintained before and after the annealing,probably due to the nitrogen incorporation in the oxide bulk and at the interface.Naturally formed transition layer between TiOxNy and SiO2 is also confirmed.

  2. Variation of crystallinity and stoichiometry in films of gallium oxide, gallium nitride and barium zirconate prepared by means of PLD

    International Nuclear Information System (INIS)

    Brendt, Jochen

    2011-01-01

    Pulsed Laser Deposition (PLD) is an ablation technique for thin film preparation of many materials. The film properties can be well controlled by the process parameters. Therefore, in many cases a given material can be deposited with different properties by changing one or more process parameters. In this thesis thin films of gallium oxide, gallium nitride and barium zirconate were deposited with a large variation in structure and stoichiometry by means of Pulsed Laser Deposition. The characterization of the film crystallinity, phase purity and short range structural order was completed by means of X-ray diffraction and X-ray absorption spectroscopy. The stoichiometry was investigated using electron probe microanalysis. For analyzing the correlation between the structure and stoichiometry with the optical and electrical properties, optical absorption and electrical conductivity measurements were carried out. The investigation of all three material systems showed that very unique properties can be realized when combining an amorphous structure and a non-stoichiometric composition. For example, in amorphous and oxygen deficient gallium oxide an insulator-metal-transition can be induced by partial crystallization of the as prepared phase accomplished by annealing at about 400 C in argon atmosphere (as shown in literature). Furthermore, amorphous and highly non-stoichiometric barium zirconate has the ability to split water molecules to hydrogen and oxygen at room temperature. A detailed analysis of both phenomena has been performed by means of photoemission and transmission electron microscopy in the case of gallium oxide and via X-ray absorption spectroscopy and gas chromatography in the case of barium zirconate.

  3. Properties of thermally oxidized and nitrided Zr-oxynitride thin film on 4H–SiC in diluted N2O ambient

    International Nuclear Information System (INIS)

    Wong, Yew Hoong; Cheong, Kuan Yew

    2012-01-01

    A systematic investigation on the structural, chemical, and electrical properties of thermally oxidized and nitrided sputtered Zr thin film in various N 2 O ambient (10–100%) at 500 °C for 15 min to form Zr-oxynitride on 4H–SiC substrate has been carried out. The chemical composition, depth profile analysis, and energy band alignment have been evaluated by X-ray photoelectron spectrometer. Zr-oxynitride layer and its interfacial layer comprised of compounds related to Zr–O, Zr–N, Zr–O–N, Si–N, and/or C–N were identified. A model related to the oxidation and nitridation mechanism has been suggested. Supportive results related to the model were obtained by energy filtered transmission electron microscopy, X-ray diffraction, and Raman analyses. A proposed crystal structure was employed to elucidate the surface roughness and topographies of the samples, which were characterized by atomic force microscopy. The electrical results revealed that 10% N 2 O sample has possessed the highest breakdown field and reliability. This was owing to the confinement of nitrogen-related compounds of Zr–O–N and/or Zr–N at or near interfacial layer region, smaller grain with finer structure on the surface, the lowest interface trap density, total interface trap density, and effective oxide charge, and highest barrier height between conduction band edge of oxide and semiconductor. -- Highlights: ► Zr-oxynitride as the gate oxide deposited on 4H–SiC substrate. ► Simultaneous oxidation and nitridation of sputtered Zr thin film on 4H–SiC using various concentrations of N 2 O gas. ► Presence of interfacial layer comprised of mixed compounds related to Zr–O, Zr–N, Zr–O–N, Si–N, and/or C–N. ► The highest electrical breakdown and highest reliability at diluted N 2 O of 10%.

  4. Visible light induced electron transfer process over nitrogen doped TiO2 nanocrystals prepared by oxidation of titanium nitride

    International Nuclear Information System (INIS)

    Wu Zhongbiao; Dong Fan; Zhao Weirong; Guo Sen

    2008-01-01

    Nitrogen doped TiO 2 nanocrystals with anatase and rutile mixed phases were prepared by incomplete oxidation of titanium nitride at different temperatures. The as-prepared samples were characterized by X-ray diffraction (XRD), transmission electron microscopy (TEM), high resolution transmission electron microscopy (HRTEM), core level X-ray photoelectron spectroscopy (CL XPS), valence band X-ray photoelectron spectroscopy (VB XPS), UV-vis diffuse reflectance spectra (UV-vis DRS), and visible light excited photoluminescence (PL). The photocatalytic activity was evaluated for photocatalytic degradation of toluene in gas phase under visible light irradiation. The visible light absorption and photoactivities of these nitrogen doped TiO 2 nanocrystals can be clearly attributed to the change of the additional electronic (N - ) states above the valence band of TiO 2 modified by N dopant as revealed by the VB XPS and visible light induced PL. A band gap structure model was established to explain the electron transfer process over nitrogen doped TiO 2 nanocrystals under visible light irradiation, which was consistent with the previous theoretical and experimental results. This model can also be applied to understand visible light induced photocatalysis over other nonmetal doped TiO 2

  5. Oxidation effects on the mechanical properties of SiC fiber-reinforced reaction-bonded silicon nitride matrix composites

    Science.gov (United States)

    Bhatt, Ramakrishna T.

    1989-01-01

    The room temperature mechanical properties of SiC fiber reinforced reaction bonded silicon nitride composites were measured after 100 hrs exposure at temperatures to 1400 C in nitrogen and oxygen environments. The composites consisted of approx. 30 vol percent uniaxially aligned 142 micron diameter SiC fibers in a reaction bonded Si3N4 matrix. The results indicate that composites heat treated in a nitrogen environment at temperatures to 1400 C showed deformation and fracture behavior equivalent to that of the as-fabricated composites. Also, the composites heat treated in an oxidizing environment beyond 400 C yielded significantly lower tensile strength values. Specifically in the temperature range from 600 to 1000 C, composites retained approx. 40 percent of their as-fabricated strength, and those heat treated in the temperatures from 1200 to 1400 C retained 70 percent. Nonetheless, for all oxygen heat treatment conditions, composite specimens displayed strain capability beyond the matrix fracture stress; a typical behavior of a tough composite.

  6. High resolution medium energy ion scattering study of silicon oxidation and oxy nitridation

    International Nuclear Information System (INIS)

    Gusev, E.P.; Lu, H.C.; Garfunkel, E.; Gustafsson, T.

    1998-01-01

    Full text: Silicon oxide is likely to remain the material of choice for gate oxides in microelectronics for the foreseeable future. As device become ever smaller and faster, the thickness of these layers in commercial products is predicted to be less than 50 Angstroms in just a few years. An understanding of such devices will therefore likely to be based on microscopic concepts and should now be investigated by atomistic techniques. With medium energy ion scattering (MEIS) using an electrostatic energy analyzer, depth profiling of thin (<60 Angstroms) silicon oxide films on Si(100) with 3 - 5 Angstroms depth resolution in the near region has been done. The growth mechanism of thin oxide films on Si(100) has been studied, using sequential oxygen isotope exposures. It is found that the oxide films are stoichiometric to within approx. 10 Angstroms of the interface. It is also found that the oxidation reactions occur at the surface, in the transition region and at interface, with only the third region being included in the conventional (Deal-Grove) model for oxide formation. Nitrogen is sometimes added to gate oxides, as it has been found empirically that his improves some of the electrical properties. The role, location and even the amount of nitrogen that exists in such films are poorly understood, and represent interesting analytical challenges. MEIS data will be presented that address these questions, measured for a number of different processing conditions. We have recently demonstrated how to perform nitrogen nano-engineering in such ultrathin gate dielectrics, and these results will also be discussed

  7. Topotactic synthesis of vanadium nitride solid foams

    International Nuclear Information System (INIS)

    Oyama, S.T.; Kapoor, R.; Oyama, H.T.; Hofmann, D.J.; Matijevic, E.

    1993-01-01

    Vanadium nitride has been synthesized with a surface area of 120 m 2 g -1 by temperature programmed nitridation of a foam-like vanadium oxide (35 m 2 g -1 ), precipitated from vanadate solutions. The nitridation reaction was established to be topotactic and pseudomorphous by x-ray powder diffraction and scanning electron microscopy. The crystallographic relationship between the nitride and oxide was {200}//{001}. The effect of precursor geometry on the product size and shape was investigated by employing vanadium oxide solids of different morphologies

  8. Zircaloy-4 and M5 high temperature oxidation and nitriding in air

    Energy Technology Data Exchange (ETDEWEB)

    Duriez, C. [Institut de Radioprotection et Surete Nucleaire, Direction de Prevention des Accidents Majeurs, Centre de Cadarache, 13115 St Paul Lez Durance (France)], E-mail: christian.duriez@irsn.fr; Dupont, T.; Schmet, B.; Enoch, F. [Universite Technologique de Troyes, BP 2060, 10010 Troyes (France)

    2008-10-15

    For the purpose of nuclear power plant severe accident analysis, degradation of Zircaloy-4 and M5 cladding tubes in air at high temperature was investigated by thermo-gravimetric analysis, in isothermal conditions, in a 600-1200 deg. C temperature range. Alloys were investigated either in a 'as received' bare state, or after steam pre-oxidation at 500 {sup o}C to simulate in-reactor corrosion. At the beginning of air exposure, the oxidation rate obeys a parabolic law, characteristic of solid-state diffusion limited regime. Parabolic rate constants compare, for Zircaloy-4 as well as for M5, with recently assessed correlations for high temperature Zircaloy-4 steam-oxidation. A thick layer of dense protective zirconia having a columnar structure forms during this diffusion-limited regime. Then, a kinetic transition (breakaway type) occurs, due to radial cracking along the columnar grain boundaries of this protective dense oxide scale. The breakaway is observed for a scale thickness that strongly increases with temperature. At the lowest temperatures, the M5 alloy appears to be breakaway-resistant, showing a delayed transition compared to Zircaloy-4. However, for both alloys, a pre-existing corrosion scale favours the transition, which occurs much earlier. The post transition kinetic regime is linear only for the lowest temperatures investigated. From 800 deg. C, a continuously accelerated regime is observed and is associated with formation of a strongly porous non-protective oxide. A mechanism of nitrogen-assisted oxide growth, involving formation and re-oxidation of ZrN particles, as well as nitrogen associated zirconia phase transformations, is proposed to be responsible for this accelerated degradation.

  9. The oxidative corrosion of carbide inclusions at the surface of uranium metal during exposure to water vapour.

    Science.gov (United States)

    Scott, T B; Petherbridge, J R; Harker, N J; Ball, R J; Heard, P J; Glascott, J; Allen, G C

    2011-11-15

    The reaction between uranium and water vapour has been well investigated, however discrepancies exist between the described kinetic laws, pressure dependence of the reaction rate constant and activation energies. Here this problem is looked at by examining the influence of impurities in the form of carbide inclusions on the reaction. Samples of uranium containing 600 ppm carbon were analysed during and after exposure to water vapour at 19 mbar pressure, in an environmental scanning electron microscope (ESEM) system. After water exposure, samples were analysed using secondary ion mass spectrometry (SIMS), focused ion beam (FIB) imaging and sectioning and transmission electron microscopy (TEM) with X-ray diffraction (micro-XRD). The results of the current study indicate that carbide particles on the surface of uranium readily react with water vapour to form voluminous UO(3) · xH(2)O growths at rates significantly faster than that of the metal. The observation may also have implications for previous experimental studies of uranium-water interactions, where the presence of differing levels of undetected carbide may partly account for the discrepancies observed between datasets. Crown Copyright © 2011. Published by Elsevier B.V. All rights reserved.

  10. Oxidation and creep behaviour of dense silicon nitride materials with different compositions

    International Nuclear Information System (INIS)

    Ernstberger, U.

    1985-09-01

    The study was intended to yield information on the oxidation and creep behaviour of Si 3 N 4 materials of different composition and microstructure, and produced by different processes. The experiments carried out in a vast temperature and load range showed that the chemical grain boundary composition is the key parameter affecting the materials' high-temperature properties. Significant correlations could be established between oxidation and creep behaviour on the one hand, and between microstructure and the behaviour on the other. (orig./IHOE) [de

  11. Hydrogen in oxides and nitrides: unexpected physics and impact on devices

    International Nuclear Information System (INIS)

    Van De Walle, Chris G; Janotti, Anderson

    2010-01-01

    Controlling the conductivity of wide-band-gap semiconductors is key to enabling applications in electronics and optoelectronics. Many oxides exhibit unintentional n-type conductivity, and oxygen vacancies have been widely discussed as the source of this conductivity. Based on first-principles investigations we have shown that this cannot be true in ZnO and SnO 2 . We suggest that the conductivity is due to unintentional incorporation of donor impurities, with hydrogen being a likely candidate. Both interstitial and substitutional hydrogen act as shallow donors in a number of oxides. The atomic and electronic structures of these centers is discussed.

  12. On the kinetics of the initial oxidation of iron and iron nitride

    DEFF Research Database (Denmark)

    Graat, P.C.J.; Somers, Marcel A.J.; Mittemeijer, E.J.

    2002-01-01

    concentration in the surface region; subsequent annealing at 573 K led to restoration of the N concentration. Oxidation in pure O2 (generally pO2 1•10 4 Pa) was performed at temperatures ranging from 300 K to 600 K. The oxidised samples were investigated with X-ray photoelectron spectroscopy (XPS...

  13. Atomic platinum layer coated titanium copper nitride supported on carbon nanotubes for the methanol oxidation reaction

    CSIR Research Space (South Africa)

    Zheng, Y

    2017-09-01

    Full Text Available measurements. The results confirm the core-shell structure of the prepared TiN@Pt/CNTs catalyst. More importantly, the catalyst exhibits superb mass activity and durability for the methanol oxidation reaction (MOR) than that of the commercial JM Pt/C catalyst...

  14. Method of preparation of uranium nitride

    Science.gov (United States)

    Kiplinger, Jaqueline Loetsch; Thomson, Robert Kenneth James

    2013-07-09

    Method for producing terminal uranium nitride complexes comprising providing a suitable starting material comprising uranium; oxidizing the starting material with a suitable oxidant to produce one or more uranium(IV)-azide complexes; and, sufficiently irradiating the uranium(IV)-azide complexes to produce the terminal uranium nitride complexes.

  15. Comparative study on nitridation and oxidation plasma interface treatment for AlGaN/GaN MIS-HEMTs with AlN gate dielectric

    Science.gov (United States)

    Zhu, Jie-Jie; Ma, Xiao-Hua; Hou, Bin; Chen, Li-Xiang; Zhu, Qing; Hao, Yue

    2017-02-01

    This paper demonstrated the comparative study on interface engineering of AlN/AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistors (MIS-HEMTs) by using plasma interface pre-treatment in various ambient gases. The 15 nm AlN gate dielectric grown by plasma-enhanced atomic layer deposition significantly suppressed the gate leakage current by about two orders of magnitude and increased the peak field-effect mobility by more than 50%. NH3/N2 nitridation plasma treatment (NPT) was used to remove the 3 nm poor-quality interfacial oxide layer and N2O/N2 oxidation plasma treatment (OPT) to improve the quality of interfacial layer, both resulting in improved dielectric/barrier interface quality, positive threshold voltage (V th) shift larger than 0.9 V, and negligible dispersion. In comparison, however, NPT led to further decrease in interface charges by 3.38 × 1012 cm-2 and an extra positive V th shift of 1.3 V. Analysis with fat field-effect transistors showed that NPT resulted in better sub-threshold characteristics and transconductance linearity for MIS-HEMTs compared with OPT. The comparative study suggested that direct removing the poor interfacial oxide layer by nitridation plasma was superior to improving the quality of interfacial layer by oxidation plasma for the interface engineering of GaN-based MIS-HEMTs.

  16. Hot-pressed silicon nitride with various lanthanide oxides as sintering additives

    Science.gov (United States)

    Ueno, K.; Toibana, Y.

    1984-01-01

    The effects of addition of various lanthanide oxides and their mixture with Y2O3 on the sintering of Si3N4 were investigated. The addition of simple and mixed lanthanide oxides promoted the densification of Si3N4 in hot-pressing at 1800 C under 300-400kg/ centimeters squared for 60 min. The crystallization of yttrium and lanthanide-silicon oxynitrides which was observed inn the sintered body containing yttrium-lanthanide mixed oxides as additives led to the formation of a highly refractory Si3N4 ceramic having a bending strength of 82 and 84 kg/millimeters squared at room temperature and 1300 C respectively. In a Y2O3+La2O3 system, a higher molar ratio of La2O3 to Y2O3 gave a higher hardness and strength at high temperatures. It was found that 90 min was an optimum sintering time for the highest strength.

  17. Thermal Conductivity of Wurtzite Zinc-Oxide from First-Principles Lattice Dynamics – a Comparative Study with Gallium Nitride

    Science.gov (United States)

    Wu, Xufei; Lee, Jonghoon; Varshney, Vikas; Wohlwend, Jennifer L.; Roy, Ajit K.; Luo, Tengfei

    2016-01-01

    Wurtzite Zinc-Oxide (w-ZnO) is a wide bandgap semiconductor that holds promise in power electronics applications, where heat dissipation is of critical importance. However, large discrepancies exist in the literature on the thermal conductivity of w-ZnO. In this paper, we determine the thermal conductivity of w-ZnO using first-principles lattice dynamics and compare it to that of wurtzite Gallium-Nitride (w-GaN) – another important wide bandgap semiconductor with the same crystal structure and similar atomic masses as w-ZnO. However, the thermal conductivity values show large differences (400 W/mK of w-GaN vs. 50 W/mK of w-ZnO at room temperature). It is found that the much lower thermal conductivity of ZnO originates from the smaller phonon group velocities, larger three-phonon scattering phase space and larger anharmonicity. Compared to w-GaN, w-ZnO has a smaller frequency gap in phonon dispersion, which is responsible for the stronger anharmonic phonon scattering, and the weaker interatomic bonds in w-ZnO leads to smaller phonon group velocities. The thermal conductivity of w-ZnO also shows strong size effect with nano-sized grains or structures. The results from this work help identify the cause of large discrepancies in w-ZnO thermal conductivity and will provide in-depth understanding of phonon dynamics for the design of w-ZnO-based electronics. PMID:26928396

  18. Plasma nitriding of AISI 52100 ball bearing steel and effect of heat ...

    Indian Academy of Sciences (India)

    ††National Engineering Industries Pvt. Ltd., Jaipur 302 006, India. MS received 26 April ... hardened and tempered with spheroidized carbides is the most commonly used mate- ... because they are polluting the environment. Plasma nitrid-.

  19. Precipitation of metal nitrides from chloride melts

    International Nuclear Information System (INIS)

    Slater, S.A.; Miller, W.E.; Willit, J.L.

    1996-01-01

    Precipitation of actinides, lanthanides, and fission products as nitrides from molten chloride melts is being investigated for use as a final cleanup step in treating radioactive salt wastes generated by electrometallurgical processing of spent nuclear fuel. The radioactive components (eg, fission products) need to be removed to reduce the volume of high-level waste that requires disposal. To extract the fission products from the salt, a nitride precipitation process is being developed. The salt waste is first contacted with a molten metal; after equilibrium is reached, a nitride is added to the metal phase. The insoluble nitrides can be recovered and converted to a borosilicate glass after air oxidation. For a bench-scale experimental setup, a crucible was designed to contact the salt and metal phases. Solubility tests were performed with candidate nitrides and metal nitrides for which there are no solubility data. Experiments were performed to assess feasibility of precipitation of metal nitrides from chloride melts

  20. Study of the electronic structure of pure aluminium, aluminium oxide and nitride by spectroscopy of electrons excited under electronic and photonic bombardment (X and UV)

    International Nuclear Information System (INIS)

    Gautier-Soyer, Martine

    1985-01-01

    This research thesis reports the use of electron spectroscopy with electrons excited under electronic or photonic (X or UV) bombardment for the study of electronic state density of aluminium, aluminium oxide (Al 2 O 3 ) and aluminium nitride (AlN). The objective is to get an insight into phenomena related to technological problems of adherence, wear, lubrication, corrosion or breakdown met in metals, insulators and semiconductors. The author highlighted the presence of occupied surface states on Al(111) and Al(100), and electronic levels localised in the forbidden band of Al 2 O 3 and AlN, induced by structural defects which promote surface reactivity [fr

  1. GEN IV: Carbide Fuel Elaboration for the 'Futurix Concepts' experiment

    International Nuclear Information System (INIS)

    Vaudez, Stephane; Riglet-Martial, Chantal; Paret, Laurent; Abonneau, Eric

    2008-01-01

    In order to collect information on the behaviour of the future GFR (Gas Fast Reactor) fuel under fast neutron irradiation, an experimental irradiation program, called 'Futurix-concepts' has been launched at the CEA. The considered concept is a composite material made of a fissile fuel embedded in an inert ceramic matrix. Fissile fuel pellets are made of UPuN or UPuC while ceramics are SiC for the carbide fuel and TiN for the nitride fuel. This paper focuses on the description of the carbide composite fabrication. The UPuC pellets are manufactured using a metallurgical powder process. Fabrication and handling of the fuels are carried out in glove boxes under a nitrogen atmosphere. Carbide fuel is synthesized by carbo-thermic reduction under vacuum of a mixture of actinide oxide and graphitic carbon up to 1550 deg. C. After ball milling, the UPuC powder is pressed to create hexagonal or spherical compacts. They are then sintered up to 1750 deg. C in order to obtain a density of 85 % of the theoretical one. The sintered pellets are inserted into an inert and tight capsule of SiC. In order to control the gap between the fuel and the matrix precisely, the pellets are abraded. The inert matrix is then filled with the pellets and the whole system is sealed by a BRASiC R process at high temperature under a helium atmosphere. Fabrication of the sample to be irradiated was done in 2006 and the irradiation began in May 2007 in the Phenix reactor. This presentation will detail and discuss the results obtained during this fabrication phase. (authors)

  2. Aqueously Dispersed Silver Nanoparticle-Decorated Boron Nitride Nanosheets for Reusable, Thermal Oxidation-Resistant Surface Enhanced Raman Spectroscopy (SERS) Devices

    Science.gov (United States)

    Lin, Yi; Bunker, Christopher E.; Fernandos, K. A. Shiral; Connell, John W.

    2012-01-01

    The impurity-free aqueous dispersions of boron nitride nanosheets (BNNS) allowed the facile preparation of silver (Ag) nanoparticle-decorated BNNS by chemical reduction of an Ag salt with hydrazine in the presence of BNNS. The resultant Ag-BNNS nanohybrids remained dispersed in water, allowing convenient subsequent solution processing. By using substrate transfer techniques, Ag-BNNS nanohybrid thin film coatings on quartz substrates were prepared and evaluated as reusable surface enhanced Raman spectroscopy (SERS) sensors that were robust against repeated solvent washing. In addition, because of the unique thermal oxidation-resistant properties of the BNNS, the sensor devices may be readily recycled by short-duration high temperature air oxidation to remove residual analyte molecules in repeated runs. The limiting factor associated with the thermal oxidation recycling process was the Ostwald ripening effect of Ag nanostructures.

  3. Pt atoms stabilized on hexagonal boron nitride as efficient single-atom catalysts for CO oxidation: A first-principles investigation

    KAUST Repository

    Liu, Xin

    2015-01-01

    Taking CO oxidation as a probe, we investigated the electronic structure and reactivity of Pt atoms stabilized by vacancy defects on hexagonal boron nitride (h-BN) by first-principles-based calculations. As a joint effect of the high reactivity of both a single Pt atom and a boron vacancy defect (PtBV), the Pt-N interaction is -4.40 eV and is already strong enough to prohibit the diffusion and aggregation of the stabilized Pt atom. Facilitated by the upshifted Pt-d states originated from the Pt-N interaction, the barriers for CO oxidation through the Langmuir-Hinshelwood mechanism for formation and dissociation of peroxide-like intermediate and the regeneration are as low as 0.38, 0.10 and 0.04 eV, respectively, suggesting the superiority of PtBV as a catalyst for low temperature CO oxidation.

  4. Suppression of interfacial voids formation during silane (SiH4)-based silicon oxide bonding with a thin silicon nitride capping layer

    Science.gov (United States)

    Lee, Kwang Hong; Bao, Shuyu; Wang, Yue; Fitzgerald, Eugene A.; Seng Tan, Chuan

    2018-01-01

    The material properties and bonding behavior of silane-based silicon oxide layers deposited by plasma-enhanced chemical vapor deposition were investigated. Fourier transform infrared spectroscopy was employed to determine the chemical composition of the silicon oxide films. The incorporation of hydroxyl (-OH) groups and moisture absorption demonstrates a strong correlation with the storage duration for both as-deposited and annealed silicon oxide films. It is observed that moisture absorption is prevalent in the silane-based silicon oxide film due to its porous nature. The incorporation of -OH groups and moisture absorption in the silicon oxide films increase with the storage time (even in clean-room environments) for both as-deposited and annealed silicon oxide films. Due to silanol condensation and silicon oxidation reactions that take place at the bonding interface and in the bulk silicon, hydrogen (a byproduct of these reactions) is released and diffused towards the bonding interface. The trapped hydrogen forms voids over time. Additionally, the absorbed moisture could evaporate during the post-bond annealing of the bonded wafer pair. As a consequence, defects, such as voids, form at the bonding interface. To address the problem, a thin silicon nitride capping film was deposited on the silicon oxide layer before bonding to serve as a diffusion barrier to prevent moisture absorption and incorporation of -OH groups from the ambient. This process results in defect-free bonded wafers.

  5. Sintering of nano crystalline o silicon carbide doping with

    Indian Academy of Sciences (India)

    Sinterable silicon carbide powders were prepared by attrition milling and chemical processing of an acheson type -SiC. Pressureless sintering of these powders was achieved by addition of aluminium nitride together with carbon. Nearly 99% sintered density was obtained. The mechanism of sintering was studied by ...

  6. New deposition processes for the growth of oxide and nitride thin films

    International Nuclear Information System (INIS)

    Apen, E.A.; Atagi, L.M.; Barbero, R.S.; Espinoza, B.F.; Hubbard, K.M.; Salazar, K.V.; Samuels, J.A.; Smith, D.C.; Hoffman, D.M.

    1998-01-01

    This is the final report of a three-year, Laboratory Directed Research and Development (LDRD) project at Los Alamos National Laboratory (LANL). The goal of this effort is to study the use of homoleptic metal amido compounds as precursors for chemical vapor deposition (CVD). The amides offer potential for the deposition of a variety of important materials at low temperatures. The establishment of these precursor compounds will enhance the ability to exploit the properties of advanced materials in numerous coatings applications. Experiments were performed to study the reactivity of Sn[NMe 2 ] 4 with oxygen. The data demonstrated that gas-phase insertion of oxygen into the Sn-N bond, leading to a reactive intermediate, plays an important role in tin oxide deposition. Several CVD processes for technologically important materials were developed using the amido precursor complexes. These included the plasma enhanced CVD of TiN and Zr 3 N 4 , and the thermal CVD of GaN and AlN. Quality films were obtained in each case, demonstrating the potential of the amido compounds as CVD precursors

  7. Covalently coupled hybrid of graphitic carbon nitride with reduced graphene oxide as a superior performance lithium-ion battery anode

    Science.gov (United States)

    Fu, Yongsheng; Zhu, Junwu; Hu, Chong; Wu, Xiaodong; Wang, Xin

    2014-10-01

    An in situ chemical synthetic approach has been designed for the fabrication of a covalently coupled hybrid consisting of graphitic carbon nitride (g-C3N4) with reduced graphene oxide (rGO) with differing g-C3N4/rGO ratio. The epoxy groups of graphene oxide (GO) undergo a nucleophilic substitution reaction with dicyandiamide (C2H4N4) to form the C2H4N4-GO composite via a covalent C-N bond, and then both the in situ polymerization of C2H4N4 and the thermal reduction of GO can be achieved at higher temperatures, forming the covalently coupled g-C3N4-rGO. FT-IR, CP-MAS NMR and XPS analyses, clearly revealed a covalent interaction between the g-C3N4 and rGO sheets. The g-C3N4-rGO exhibits an unprecedented high, stable and reversible capacity of 1525 mA h g-1 at a current density of 100 mA g-1 after 50 cycles. Even at a large current density of 1000 mA g-1, a reversible capacity of 943 mA h g-1 can still be retained. The superior electrochemical performance of g-C3N4-rGO is attributed to the specific characteristics of the unique nanostructure of g-C3N4-rGO and the concerted effects of g-C3N4 and rGO, including covalent interactions between the two moieties, the good conductivity and high special surface area of the nanocomposite, as well as the template effect of the planar amino group of g-C3N4 for the dispersed decoration of Li+ ions.An in situ chemical synthetic approach has been designed for the fabrication of a covalently coupled hybrid consisting of graphitic carbon nitride (g-C3N4) with reduced graphene oxide (rGO) with differing g-C3N4/rGO ratio. The epoxy groups of graphene oxide (GO) undergo a nucleophilic substitution reaction with dicyandiamide (C2H4N4) to form the C2H4N4-GO composite via a covalent C-N bond, and then both the in situ polymerization of C2H4N4 and the thermal reduction of GO can be achieved at higher temperatures, forming the covalently coupled g-C3N4-rGO. FT-IR, CP-MAS NMR and XPS analyses, clearly revealed a covalent interaction between

  8. Fabrication and oxidation resistance of titanium carbide-coated carbon fibres by reacting titanium hydride with carbon fibres in molten salts

    International Nuclear Information System (INIS)

    Dong, Z.J.; Li, X.K.; Yuan, G.M.; Cong, Y.; Li, N.; Jiang, Z.Y.; Hu, Z.J.

    2009-01-01

    Using carbon fibres and titanium hydride as a reactive carbon source and a metal source, respectively, a protective titanium carbide (TiC) coating was formed on carbon fibres in molten salts, composed of LiCl-KCl-KF, at 750-950 o C. The structure and morphology of the TiC coatings were characterised by X-ray diffraction and scanning electron microscopy, respectively. The oxidation resistance of the TiC-coated carbon fibres was measured by thermogravimetric analysis. The results reveal that control of the coating thickness is very important for improvement of the oxidation resistance of TiC-coated carbon fibres. The oxidative weight loss initiation temperature for the TiC-coated carbon fibres increases significantly when an appropriate coating thickness is used. However, thicker coatings lead to a decrease of the carbon fibres' weight loss initiation temperature due to the formation of cracks in the coating. The TiC coating thickness on carbon fibres can be controlled by adjusting the reaction temperature and time of the molten salt synthesis.

  9. Method of fabricating porous silicon carbide (SiC)

    Science.gov (United States)

    Shor, Joseph S. (Inventor); Kurtz, Anthony D. (Inventor)

    1995-01-01

    Porous silicon carbide is fabricated according to techniques which result in a significant portion of nanocrystallites within the material in a sub 10 nanometer regime. There is described techniques for passivating porous silicon carbide which result in the fabrication of optoelectronic devices which exhibit brighter blue luminescence and exhibit improved qualities. Based on certain of the techniques described porous silicon carbide is used as a sacrificial layer for the patterning of silicon carbide. Porous silicon carbide is then removed from the bulk substrate by oxidation and other methods. The techniques described employ a two-step process which is used to pattern bulk silicon carbide where selected areas of the wafer are then made porous and then the porous layer is subsequently removed. The process to form porous silicon carbide exhibits dopant selectivity and a two-step etching procedure is implemented for silicon carbide multilayers.

  10. Properties of thermally oxidized and nitrided Zr-oxynitride thin film on 4H-SiC in diluted N{sub 2}O ambient

    Energy Technology Data Exchange (ETDEWEB)

    Wong, Yew Hoong [Energy Efficient and Sustainable Semiconductor Research Group, School of Materials and Mineral Resources Engineering, Engineering Campus, Universiti Sains Malaysia, 14300, Nibong Tebal, Seberang Perai Selatan, Penang (Malaysia); Cheong, Kuan Yew, E-mail: cheong@eng.usm.my [Energy Efficient and Sustainable Semiconductor Research Group, School of Materials and Mineral Resources Engineering, Engineering Campus, Universiti Sains Malaysia, 14300, Nibong Tebal, Seberang Perai Selatan, Penang (Malaysia)

    2012-10-15

    A systematic investigation on the structural, chemical, and electrical properties of thermally oxidized and nitrided sputtered Zr thin film in various N{sub 2}O ambient (10-100%) at 500 Degree-Sign C for 15 min to form Zr-oxynitride on 4H-SiC substrate has been carried out. The chemical composition, depth profile analysis, and energy band alignment have been evaluated by X-ray photoelectron spectrometer. Zr-oxynitride layer and its interfacial layer comprised of compounds related to Zr-O, Zr-N, Zr-O-N, Si-N, and/or C-N were identified. A model related to the oxidation and nitridation mechanism has been suggested. Supportive results related to the model were obtained by energy filtered transmission electron microscopy, X-ray diffraction, and Raman analyses. A proposed crystal structure was employed to elucidate the surface roughness and topographies of the samples, which were characterized by atomic force microscopy. The electrical results revealed that 10% N{sub 2}O sample has possessed the highest breakdown field and reliability. This was owing to the confinement of nitrogen-related compounds of Zr-O-N and/or Zr-N at or near interfacial layer region, smaller grain with finer structure on the surface, the lowest interface trap density, total interface trap density, and effective oxide charge, and highest barrier height between conduction band edge of oxide and semiconductor. -- Highlights: Black-Right-Pointing-Pointer Zr-oxynitride as the gate oxide deposited on 4H-SiC substrate. Black-Right-Pointing-Pointer Simultaneous oxidation and nitridation of sputtered Zr thin film on 4H-SiC using various concentrations of N{sub 2}O gas. Black-Right-Pointing-Pointer Presence of interfacial layer comprised of mixed compounds related to Zr-O, Zr-N, Zr-O-N, Si-N, and/or C-N. Black-Right-Pointing-Pointer The highest electrical breakdown and highest reliability at diluted N{sub 2}O of 10%.

  11. Reaction-bonded silicon nitride

    International Nuclear Information System (INIS)

    Porz, F.

    1982-10-01

    Reaction-bonded silicon nitride (RBSN) has been characterized. The oxidation behaviour in air up to 1500 0 C and 3000 h and the effects of static and cyclic oxidation on room-temperature strength have been studied. (orig./IHOE) [de

  12. Effect of additive gases and injection methods on chemical dry etching of silicon nitride, silicon oxynitride, and silicon oxide layers in F2 remote plasmas

    International Nuclear Information System (INIS)

    Yun, Y. B.; Park, S. M.; Kim, D. J.; Lee, N.-E.; Kim, K. S.; Bae, G. H.

    2007-01-01

    The authors investigated the effects of various additive gases and different injection methods on the chemical dry etching of silicon nitride, silicon oxynitride, and silicon oxide layers in F 2 remote plasmas. N 2 and N 2 +O 2 gases in the F 2 /Ar/N 2 and F 2 /Ar/N 2 /O 2 remote plasmas effectively increased the etch rate of the layers. The addition of direct-injected NO gas increased the etch rates most significantly. NO radicals generated by the addition of N 2 and N 2 +O 2 or direct-injected NO molecules contributed to the effective removal of nitrogen and oxygen in the silicon nitride and oxide layers, by forming N 2 O and NO 2 by-products, respectively, and thereby enhancing SiF 4 formation. As a result of the effective removal of the oxygen, nitrogen, and silicon atoms in the layers, the chemical dry etch rates were enhanced significantly. The process regime for the etch rate enhancement of the layers was extended at elevated temperature

  13. Solar-Driven Reduction of Aqueous Protons Coupled to Selective Alcohol Oxidation with a Carbon Nitride-Molecular Ni Catalyst System.

    Science.gov (United States)

    Kasap, Hatice; Caputo, Christine A; Martindale, Benjamin C M; Godin, Robert; Lau, Vincent Wing-Hei; Lotsch, Bettina V; Durrant, James R; Reisner, Erwin

    2016-07-27

    Solar water-splitting represents an important strategy toward production of the storable and renewable fuel hydrogen. The water oxidation half-reaction typically proceeds with poor efficiency and produces the unprofitable and often damaging product, O2. Herein, we demonstrate an alternative approach and couple solar H2 generation with value-added organic substrate oxidation. Solar irradiation of a cyanamide surface-functionalized melon-type carbon nitride ((NCN)CNx) and a molecular nickel(II) bis(diphosphine) H2-evolution catalyst (NiP) enabled the production of H2 with concomitant selective oxidation of benzylic alcohols to aldehydes in high yield under purely aqueous conditions, at room temperature and ambient pressure. This one-pot system maintained its activity over 24 h, generating products in 1:1 stoichiometry, separated in the gas and solution phases. The (NCN)CNx-NiP system showed an activity of 763 μmol (g CNx)(-1) h(-1) toward H2 and aldehyde production, a Ni-based turnover frequency of 76 h(-1), and an external quantum efficiency of 15% (λ = 360 ± 10 nm). This precious metal-free and nontoxic photocatalytic system displays better performance than an analogous system containing platinum instead of NiP. Transient absorption spectroscopy revealed that the photoactivity of (NCN)CNx is due to efficient substrate oxidation of the material, which outweighs possible charge recombination compared to the nonfunctionalized melon-type carbon nitride. Photoexcited (NCN)CNx in the presence of an organic substrate can accumulate ultralong-lived "trapped electrons", which allow for fuel generation in the dark. The artificial photosynthetic system thereby catalyzes a closed redox cycle showing 100% atom economy and generates two value-added products, a solar chemical, and solar fuel.

  14. Low temperature anodic bonding to silicon nitride

    DEFF Research Database (Denmark)

    Weichel, Steen; Reus, Roger De; Bouaidat, Salim

    2000-01-01

    Low-temperature anodic bonding to stoichiometric silicon nitride surfaces has been performed in the temperature range from 3508C to 4008C. It is shown that the bonding is improved considerably if the nitride surfaces are either oxidized or exposed to an oxygen plasma prior to the bonding. Both bu...

  15. Tungsten carbide and tungsten-molybdenum carbides as automobile exhaust catalysts

    International Nuclear Information System (INIS)

    Leclercq, L.; Daubrege, F.; Gengembre, L.; Leclercq, G.; Prigent, M.

    1987-01-01

    Several catalyst samples of tungsten carbide and W, Mo mixed carbides with different Mo/W atom ratios, have been prepared to test their ability to remove carbon monoxide, nitric oxide and propane from a synthetic exhaust gas simulating automobile emissions. Surface characterization of the catalysts has been performed by X-ray photoelectron spectroscopy (XPS) and selective chemisorption of hydrogen and carbon monoxide. Tungsten carbide exhibits good activity for CO and NO conversion, compared to a standard three-way catalyst based on Pt and Rh. However, this W carbide is ineffective in the oxidation of propane. The Mo,W mixed carbides are markedly different having only a very low activity. 9 refs.; 10 figs.; 5 tabs

  16. Epitaxially-grown Gallium Nitride on Gallium Oxide substrate for photon pair generation in visible and telecomm wavelengths

    KAUST Repository

    Awan, Kashif M.; Dolgaleva, Ksenia; Mumthaz Muhammed, Mufasila; Roqan, Iman S.

    2016-01-01

    Gallium Nitride (GaN), along with other III-Nitrides, is attractive for optoelectronic and electronic applications due to its wide direct energy bandgap, as well as high thermal stability. GaN is transparent over a wide wavelength range from infra-red to the visible band, which makes it suitable for lasers and LEDs. It is also expected to be a suitable candidate for integrated nonlinear photonic circuits for a wide range of applications from all-optical signal processing to quantum computing and on-chip wavelength conversion. Despite its abundant use in commercial devices, there is still need for suitable substrate materials to reduce high densities of threading dislocations (TDs) and other structural defects like stacking faults, and grain boundaries. All these defects degrade the optical quality of the epi-grown GaN layer as they act as non-radiative recombination centers.

  17. Epitaxially-grown Gallium Nitride on Gallium Oxide substrate for photon pair generation in visible and telecomm wavelengths

    KAUST Repository

    Awan, Kashif M.

    2016-08-11

    Gallium Nitride (GaN), along with other III-Nitrides, is attractive for optoelectronic and electronic applications due to its wide direct energy bandgap, as well as high thermal stability. GaN is transparent over a wide wavelength range from infra-red to the visible band, which makes it suitable for lasers and LEDs. It is also expected to be a suitable candidate for integrated nonlinear photonic circuits for a wide range of applications from all-optical signal processing to quantum computing and on-chip wavelength conversion. Despite its abundant use in commercial devices, there is still need for suitable substrate materials to reduce high densities of threading dislocations (TDs) and other structural defects like stacking faults, and grain boundaries. All these defects degrade the optical quality of the epi-grown GaN layer as they act as non-radiative recombination centers.

  18. Visible light photoreactivity from hybridization states between carbon nitride bandgap states and valence states in Nb and Ti oxides

    Energy Technology Data Exchange (ETDEWEB)

    Lee, Hosik, E-mail: hosiklee@gmail.com [School of Mechanical and Advanced Materials Engineering, Ulsan National Institute of Science and Technology (UNIST), Unist-gil 100 Eonyang-eup, Ulsan 689-798 (Korea, Republic of); Ohno, Takahisa, E-mail: OHNO.Takahisa@nims.go.jp [Global Research Center for Environment and Energy based on Nanomaterials Science (GREEN), National Institute for Material Science, 1-2-1 Sengen, Tsukuba (Japan); Computational Materials Science Unit (CMSU), National Institute for Materials Science (NIMS), Tsukuba, Ibaraki 305-0047 (Japan)

    2013-03-29

    Highlights: ► Origin of bandgap reduction for visible photoreactivity is suggested. ► Carbon nitride adsorption in interlayer space can induce the bandgap reduction. ► The electronic structures are studied by density functional theory calculations. - Abstract: For better efficiency as photocatalysts, N-doping for visible light reactivity has been intensively studied in Lamellar niobic and titanic solid acids (HNb{sub 3}O{sub 8}, H{sub 2}Ti{sub 4}O{sub 9}), and its microscopic structures have been debated in this decade. We calculate the layered solid acids’ structures and bandgaps. Bandgap reduction by carbon nitride adsorption in interlayer space is observed computationally. It originates from localized nitrogen states which form delocalized top-valence states by hybridizing with the host oxygen states and can contribute to photo-current.

  19. Fabrication of TiC-TiO{sub 2} composite powders by thermal plasma oxidation of titanium carbide powder; Tanka chitan funmatsu no plasma sanka hanno ni yori seiseishita TiC-TiO{sub 2} fukugo funmatsu

    Energy Technology Data Exchange (ETDEWEB)

    Ishigaki, T.; Li, Y.; Haneda, H. [National institute for Research Inorganic materials, Tsukuba (Japan); Kataoka, E. [Showa Cabot Supermetals K.K., Tokyo (Japan)

    2000-09-15

    TiC-TiO{sub 2} composite powders were prepared by in-flight oxidation of titanium carbide powder in RF induction thermal plasmas. Original titanium carbide powder of 20 - 38 {mu}m in particle size was axially injected into the center of argon-oxygen plasma. The powders were partially spheroidized and evaporated through the plasma treatment. X-ray diffraction of plasma-treated powders showed the formation of titanium dioxides, both rutile and anatase phases. The phase content of the plasma-prepared powders strongly depended on the plasma conditions, such as the plasma generating pressure and the oxygen flow rate in plasma generating gas. Especially, the increase of oxygen flow rate in plasma gas gave rise to the increase of heat transfer from plasma to powder particles, exothermic heat of oxidation reaction and cooling rate of plasma, giving the increase of spheroidization ratio, formation ratio of titanium dioxides, and content of anatase phases. (author)

  20. Effects of oxidation-nitridation in the presence of water vapor on ASTM A335 P92 steel using SEM-EDS and XPS characterization techniques

    Science.gov (United States)

    Orozco, J. C.; Kafarov, V.; Y Peña, D.; Alviz, A.

    2017-12-01

    This research studies the physical and chemical changes in steel ASTM A335 P92, produced from a typical refinery corrosion environment. The environment evaluated was oxidation-nitridation with the presence of water vapor. In this study five (5) exposure times were selected: 1, 20, 50, 100 and 200 hours; As well as two (2) analysis temperatures: 450 and 550°C. The working pressure used was one (1) atmosphere. Bearing in mind the kinetic study, the behaviour shown in ASTM A335 P92 steel describes an accelerated growth until 50 hours, after this time growth is less. For the tests carried out at 450°C, the kinetic constant was 2x10-8g2mm-4h-1, as well as for 550°C the calculated kinetic constant was 3.1×10-7g2mm-4h-1 through the SEM-EDS characterization techniques, it was possible to appreciate a good adhesion and homogeneity of the layers formed on the metal matrix until a time of exposure of 100 hours at 450 and 550°C, different from that evidenced to 200 hours of exposure where the layer formed near to the substrate showed detachment, this is attributed to the formation of hydroxides product of water vapor. Among the results obtained are the elemental composition, the presence of nitrides such as Si3N4, also NSiO2 and NSi2O, molybdenum oxides: MoO2 and MoO3 and iron oxides: FeO and Fe2O3 can be evidenced.

  1. Selective ablation of a titanium nitride film on tungsten carbide substrate using ultrashort laser pulses; Ablação seletiva de um filme de nitreto de titânio em substrato de carboneto de tungstênio utilizando laser de pulsos ultracurtos

    Energy Technology Data Exchange (ETDEWEB)

    Oliveira, Eduardo Spinelli

    2017-07-01

    Surface coatings are applied to many cutting tools in the metallurgical industry in order to improve cutting efficiency and extend its useful life. In this work, tests were performed to remove the coating of titanium aluminum nitride (TiAlN) on tungsten carbide (WC-Co) pellets, using an ultrashort laser pulses beam. After determination of the damage thresholds of the film and the substrate, were ablated on the surface of the coating lines using two ablation conditions, it was initially operated on the low fluence regime for the film, and later on the low fluence regime of the substrate, far below the threshold of the film, applying high overlapping pulses. A laser induced breakdown spectroscopy (LIBS) system was set up to monitor the materials present in the plasma generated by the laser, but the system did not present sufficient sensitivity to read the low intensity of the plasma generated in the process and was not used. After the analysis of the traces by electron microscopy, optical profilometer and X-ray fluorescence spectroscopy, it was not possible to determine a safe process to carry out the selective removal of the film in question, however, due to the data obtained and observations of the results in some traces, new possibilities were raised, opening the discussion for future work. (author)

  2. Non-carbon titanium cobalt nitride nanotubes supported platinum catalyst with high activity and durability for methanol oxidation reaction

    Science.gov (United States)

    Chen, Xiaoxiang; Li, Wuyi; Pan, Zhanchang; Xu, Yanbin; Liu, Gen; Hu, Guanghui; Wu, Shoukun; Li, Jinghong; Chen, Chun; Lin, Yingsheng

    2018-05-01

    Titanium cobalt nitride nanotubes (Ti0.95Co0.05N NTs) hybrid support, a novel robust non-carbon support material prepared by solvothermal and post-nitriding processes, is further decorated with Pt nanoparticles for the electrooxidation of methanol. The catalyst is characterized by X-ray diffraction (XRD), nitrogen adsorption/desorption, transmission electron microscopy (TEM), X-ray photoelectron spectroscopy (XPS) and electrochemical measurements. The morphology, structure and composition of the synthesized Ti0.95Co0.05N NTs suggest that the nanotube wall is porous and consists of homogeneous cohesively attached nitrides nanocube particles. Notable, Ti0.95Co0.05N NTs supported Pt catalyst exhibits significantly improved catalytic activity and durability for methanol electrooxidation compared with the conventional JM Pt/C catalyst. The experimental data indicate that enhanced catalytic activity and stability of Pt/Ti0.95Co0.05N NTs towards methanol electrooxidation might be mainly attributed to the tubular nanostructures and synergistic effect introduced by the Co doping. Both of them are playing an important role in improving the activity and durability of the Ti0.95Co0.05N NTs catalyst.

  3. Magnesium carbide synthesis from methane and magnesium oxide - a potential methodology for natural gas conversion to premium fuels and chemicals

    Energy Technology Data Exchange (ETDEWEB)

    Diaz, A.F.; Modestino, A.J.; Howard, J.B. [Massachusetts Institute of Technology, Cambridge, MA (United States)] [and others

    1995-12-31

    Diversification of the raw materials base for manufacturing premium fuels and chemicals offers U.S. and international consumers economic and strategic benefits. Extensive reserves of natural gas in the world provide a valuable source of clean gaseous fuel and chemical feedstock. Assuming the availability of suitable conversion processes, natural gas offers the prospect of improving flexibility in liquid fuels and chemicals manufacture, and thus, the opportunity to complement, supplement, or displace petroleum-based production as economic and strategic considerations require. The composition of natural gas varies from reservoir to reservoir but the principal hydrocarbon constituent is always methane (CH{sub 4}). With its high hydrogen-to-carbon ratio, methane has the potential to produce hydrogen or hydrogen-rich products. However, methane is a very chemically stable molecule and, thus, is not readily transformed to other molecules or easily reformed to its elements (H{sub 2} and carbon). In many cases, further research is needed to augment selectivity to desired product(s), increase single-pass conversions, or improve economics (e.g. there have been estimates of $50/bbl or more for liquid products) before the full potential of these methodologies can be realized on a commercial scale. With the trade-off between gas conversion and product selectivity, a major challenge common to many of these technologies is to simultaneously achieve high methane single-pass conversions and high selectivity to desired products. Based on the results of the scoping runs, there appears to be strong indications that a breakthrough has finally been achieved in that synthesis of magnesium carbides from MgO and methane in the arc discharge reactor has been demonstrated.

  4. Relative SHG measurements of metal thin films: Gold, silver, aluminum, cobalt, chromium, germanium, nickel, antimony, titanium, titanium nitride, tungsten, zinc, silicon and indium tin oxide

    Directory of Open Access Journals (Sweden)

    Franklin Che

    Full Text Available We have experimentally measured the surface second-harmonic generation (SHG of sputtered gold, silver, aluminum, zinc, tungsten, copper, titanium, cobalt, nickel, chromium, germanium, antimony, titanium nitride, silicon and indium tin oxide thin films. The second-harmonic response was measured in reflection using a 150 fs p-polarized laser pulse at 1561 nm. We present a clear comparison of the SHG intensity of these films relative to each other. Our measured relative intensities compare favorably with the relative intensities of metals with published data. We also report for the first time to our knowledge the surface SHG intensity of tungsten and antimony relative to that of well known metallic thin films such as gold and silver. Keywords: Surface second-harmonic generation, Nonlinear optics, Metal thin films

  5. Effect of microstructure on the high temperature strength of nitride

    Indian Academy of Sciences (India)

    Effect of microstructure on the high temperature strength of nitride bonded silicon carbide composite. J Rakshit P K Das. Composites Volume ... The effect of these parameters on room temperature and high temperature strength of the composite up to 1300°C in ambient condition were studied. The high temperature flexural ...

  6. boron nitride coating of uranium dioxide and uranium dioxide-gadolinium oxide fuels by chemical precipitation method

    International Nuclear Information System (INIS)

    Uslu, I.; Tanker, E.; Guenduez, G.

    1997-01-01

    In this research pure urania and urania-gadolinia (5 and 10 %) fuels were coated with boron nitride (BN). This is achieved through chemical vapor deposition (CVD) using boron tricloride BCl 3 ) and ammonia (NH 3 ) at 600 C.Boron tricloride and ammonia are carried to tubular furnace using hydrogen as carrier gas. The coated samples were sintered at 1600 K. The properties of the coated samples were observed using BET surface area analysis, infrared spectra (IR), X-Ray Diffraction and Scanning Electron Microscope (SEM) techniques

  7. Ablation-resistant carbide Zr0.8Ti0.2C0.74B0.26 for oxidizing environments up to 3,000 °C

    Science.gov (United States)

    Zeng, Yi; Wang, Dini; Xiong, Xiang; Zhang, Xun; Withers, Philip J.; Sun, Wei; Smith, Matthew; Bai, Mingwen; Xiao, Ping

    2017-06-01

    Ultra-high temperature ceramics are desirable for applications in the hypersonic vehicle, rockets, re-entry spacecraft and defence sectors, but few materials can currently satisfy the associated high temperature ablation requirements. Here we design and fabricate a carbide (Zr0.8Ti0.2C0.74B0.26) coating by reactive melt infiltration and pack cementation onto a C/C composite. It displays superior ablation resistance at temperatures from 2,000-3,000 °C, compared to existing ultra-high temperature ceramics (for example, a rate of material loss over 12 times better than conventional zirconium carbide at 2,500 °C). The carbide is a substitutional solid solution of Zr-Ti containing carbon vacancies that are randomly occupied by boron atoms. The sealing ability of the ceramic's oxides, slow oxygen diffusion and a dense and gradient distribution of ceramic result in much slower loss of protective oxide layers formed during ablation than other ceramic systems, leading to the superior ablation resistance.

  8. Electronic Effects on Room-Temperature, Gas-Phase C-H Bond Activations by Cluster Oxides and Metal Carbides: The Methane Challenge.

    Science.gov (United States)

    Schwarz, Helmut; Shaik, Sason; Li, Jilai

    2017-12-06

    This Perspective discusses a story of one molecule (methane), a few metal-oxide cationic clusters (MOCCs), dopants, metal-carbide cations, oriented-electric fields (OEFs), and a dizzying mechanistic landscape of methane activation! One mechanism is hydrogen atom transfer (HAT), which occurs whenever the MOCC possesses a localized oxyl radical (M-O • ). Whenever the radical is delocalized, e.g., in [MgO] n •+ the HAT barrier increases due to the penalty of radical localization. Adding a dopant (Ga 2 O 3 ) to [MgO] 2 •+ localizes the radical and HAT transpires. Whenever the radical is located on the metal centers as in [Al 2 O 2 ] •+ the mechanism crosses over to proton-coupled electron transfer (PCET), wherein the positive Al center acts as a Lewis acid that coordinates the methane molecule, while one of the bridging oxygen atoms abstracts a proton, and the negatively charged CH 3 moiety relocates to the metal fragment. We provide a diagnostic plot of barriers vs reactants' distortion energies, which allows the chemist to distinguish HAT from PCET. Thus, doping of [MgO] 2 •+ by Al 2 O 3 enables HAT and PCET to compete. Similarly, [ZnO] •+ activates methane by PCET generating many products. Adding a CH 3 CN ligand to form [(CH 3 CN)ZnO] •+ leads to a single HAT product. The CH 3 CN dipole acts as an OEF that switches off PCET. [MC] + cations (M = Au, Cu) act by different mechanisms, dictated by the M + -C bond covalence. For example, Cu + , which bonds the carbon atom mostly electrostatically, performs coupling of C to methane to yield ethylene, in a single almost barrier-free step, with an unprecedented atomic choreography catalyzed by the OEF of Cu + .

  9. Osseointegration is improved by coating titanium implants with a nanostructured thin film with titanium carbide and titanium oxides clustered around graphitic carbon

    Energy Technology Data Exchange (ETDEWEB)

    Veronesi, Francesca [Laboratory of Preclinical and Surgical Studies, Rizzoli Orthopedic Institute, Via Di Barbiano 1/10, Bologna 40136 (Italy); Giavaresi, Gianluca; Fini, Milena [Laboratory of Preclinical and Surgical Studies, Rizzoli Orthopedic Institute, Via Di Barbiano 1/10, Bologna 40136 (Italy); Laboratory of Biocompatibility, Innovative Technologies and Advanced Therapies, Department Rizzoli RIT, Via Di Barbiano 1/10, Bologna 40136 (Italy); Longo, Giovanni [CNR Istituto di Struttura della Materia, CNR, Via del Fosso del Cavaliere 100, 00133 Roma (Italy); Ioannidu, Caterina Alexandra; Scotto d' Abusco, Anna [Dept. of Biochemical Sciences, Sapienza University of Roma, Ple A. Moro 5, 00185 Roma (Italy); Superti, Fabiana; Panzini, Gianluca [Dept. of Technologies and Health, Istituto Superiore di Sanità, Viale Regina Elena, 299 Roma (Italy); Misiano, Carlo [Romana Film Sottili, Anzio, Roma (Italy); Palattella, Alberto [Dept. of Clinical Sciences and Translational Medicine, Tor Vergata University, Via Montpellier 1, 00133 Roma (Italy); Selleri, Paolo; Di Girolamo, Nicola [Exotic Animals Clinic, Via S. Giovannini 53, 00137 Roma (Italy); Garbarino, Viola [Dept. of Radiology, S.M. Goretti Hospital, Via G. Reni 2, 04100 Latina (Italy); Politi, Laura [Dept. of Biochemical Sciences, Sapienza University of Roma, Ple A. Moro 5, 00185 Roma (Italy); Scandurra, Roberto, E-mail: roberto.scandurra@uniroma1.it [Dept. of Biochemical Sciences, Sapienza University of Roma, Ple A. Moro 5, 00185 Roma (Italy)

    2017-01-01

    Titanium implants coated with a 500 nm nanostructured layer, deposited by the Ion Plating Plasma Assisted (IPPA) technology, composed of 60% graphitic carbon, 25% titanium oxides and 15% titanium carbide were implanted into rabbit femurs whilst into the controlateral femurs uncoated titanium implants were inserted as control. At four time points the animals were injected with calcein green, xylenol orange, oxytetracycline and alizarin. After 2, 4 and 8 weeks femurs were removed and processed for histology and static and dynamic histomorphometry for undecalcified bone processing into methylmethacrylate, sectioned, thinned, polished and stained with Toluidine blue and Fast green. The overall bone-implant contacts rate (percentage of bone-implant contacts/weeks) of the TiC coated implant was 1.6 fold than that of the uncoated titanium implant. The histomorphometric analyses confirmed the histological evaluations. More precisely, higher Mineral Apposition Rate (MAR, μm/day) (p < 0.005) and Bone Formation Rate (BFR, μm{sup 2}/μm/day) (p < 0.0005) as well as Bone Implant Contact (Bic) and Bone Ingrowth values (p < 0.0005) were observed for the TiC coated implants compared to uncoated implants. In conclusion the hard nanostructured TiC layer protects the bulk titanium implant against the harsh conditions of biological tissues and in the same time, stimulating adhesion, proliferation and activity of osteoblasts, induces a better bone-implant contacts of the implant compared to the uncoated titanium implant. - Highlights: • Ti implants were coated with a nanostructured film composed of C{sub gr}, TiC and TiO{sub x}. • The TiC layer stimulates adhesion, proliferation and activity of osteoblasts. • Uncoated and TiC coated titanium implants were implanted in rabbit femurs. • Bone-implant contacts of TiC coated implants were higher than that of uncoated. • Mineral Apposition Rate of TiC coated implants were higher than that of uncoated.

  10. Osseointegration is improved by coating titanium implants with a nanostructured thin film with titanium carbide and titanium oxides clustered around graphitic carbon

    International Nuclear Information System (INIS)

    Veronesi, Francesca; Giavaresi, Gianluca; Fini, Milena; Longo, Giovanni; Ioannidu, Caterina Alexandra; Scotto d'Abusco, Anna; Superti, Fabiana; Panzini, Gianluca; Misiano, Carlo; Palattella, Alberto; Selleri, Paolo; Di Girolamo, Nicola; Garbarino, Viola; Politi, Laura; Scandurra, Roberto

    2017-01-01

    Titanium implants coated with a 500 nm nanostructured layer, deposited by the Ion Plating Plasma Assisted (IPPA) technology, composed of 60% graphitic carbon, 25% titanium oxides and 15% titanium carbide were implanted into rabbit femurs whilst into the controlateral femurs uncoated titanium implants were inserted as control. At four time points the animals were injected with calcein green, xylenol orange, oxytetracycline and alizarin. After 2, 4 and 8 weeks femurs were removed and processed for histology and static and dynamic histomorphometry for undecalcified bone processing into methylmethacrylate, sectioned, thinned, polished and stained with Toluidine blue and Fast green. The overall bone-implant contacts rate (percentage of bone-implant contacts/weeks) of the TiC coated implant was 1.6 fold than that of the uncoated titanium implant. The histomorphometric analyses confirmed the histological evaluations. More precisely, higher Mineral Apposition Rate (MAR, μm/day) (p < 0.005) and Bone Formation Rate (BFR, μm 2 /μm/day) (p < 0.0005) as well as Bone Implant Contact (Bic) and Bone Ingrowth values (p < 0.0005) were observed for the TiC coated implants compared to uncoated implants. In conclusion the hard nanostructured TiC layer protects the bulk titanium implant against the harsh conditions of biological tissues and in the same time, stimulating adhesion, proliferation and activity of osteoblasts, induces a better bone-implant contacts of the implant compared to the uncoated titanium implant. - Highlights: • Ti implants were coated with a nanostructured film composed of C gr , TiC and TiO x . • The TiC layer stimulates adhesion, proliferation and activity of osteoblasts. • Uncoated and TiC coated titanium implants were implanted in rabbit femurs. • Bone-implant contacts of TiC coated implants were higher than that of uncoated. • Mineral Apposition Rate of TiC coated implants were higher than that of uncoated.

  11. Wear characteristics of TiO[sub 2] coating and silicon carbide alloyed layer on Ti-6Al-4V material

    Energy Technology Data Exchange (ETDEWEB)

    Karamis, M.B. (Dept. of Mechanical Engineering, Erciyes Univ., Kayseri (Turkey))

    1992-08-14

    Wear properties of Ti-6Al-4V material (IMI-318) TiO[sub 2] coated and electron beam alloyed with silicon carbide were tested. Thickness of oxide coating, alloying conditions and properties of the alloyed layer such as hardness, layer thickness and microstructure are described. Wear tests were carried out on a general-purpose wear machine by using a disc-disc sample configuration under lubricated conditions. Counterface materials to oxide-coated and to surface-alloyed specimens were plasma-nitrided AISI 51100 and hardened AISI 4140 respectively. The resulting weight loss and wear resistance were monitored as a function of sliding distance and applied load. Although the electron beam alloying improved the wear resistance of Ti-6Al-4V material, the oxide coatings on the material were not resistant to wear. (orig.).

  12. The Effect of Mesoporous Carbon Nitride Modification by Titanium Oxide Nanoparticles on Photocatalytic Degradation of 1,3-Dinitrobenzene

    Directory of Open Access Journals (Sweden)

    Seyyed Ershad Moradi

    2015-11-01

    Full Text Available In the present work, well ordered, mesoporous carbon nitride (MCN sorbent with uniform mesoporous wall, high surface area and pore volume has been fabricated using the simple polymerization reaction between ethylene diamine and carbon tetrachloride in mesoporous silica media, and then modified by TiO2 nanoparticles (Ti-MCN. The structural order and textural properties of the nanoporous materials were studied by XRD, elemental analysis, and nitrogen adsorption–desorption experiments. Photodegradation experiments for 1,3-dinitrobenzene were conducted in batch mode, the Ti-MCN catalysts were found to be more active compared to the free TiO2 nanoparticles for 1,3-dinitrobenzene degradation.

  13. Theoretical assessment of the electro-optical features of the group III nitrides (B{sub 12}N{sub 12}, Al{sub 12}N{sub 12} and Ga{sub 12}N{sub 12}) and group IV carbides (C{sub 24}, Si{sub 12}C{sub 12} and Ge{sub 12}C{sub 12}) nanoclusters encapsulated with alkali metals (Li, Na and K)

    Energy Technology Data Exchange (ETDEWEB)

    Tahmasebi, Elham [Chemistry Department, Faculty of Science, Lorestan University, Khorram Abad, Lorestan (Iran, Islamic Republic of); Shakerzadeh, Ehsan, E-mail: e.shakerzadeh@scu.ac.ir [Chemistry Department, Faculty of Science, Shahid Chamran University, Ahvaz (Iran, Islamic Republic of); Biglari, Zeinab [Chemistry Department, Faculty of Science, Lorestan University, Khorram Abad, Lorestan (Iran, Islamic Republic of)

    2016-02-15

    Graphical abstract: - Highlights: • Encapsulation of Li, Na and K narrow the HOMO–LUMO gaps of the clusters. • The group III nitrides nanoclusters strongly interacted with the alkali metals. • First hyperpolarizabilities remarkably enhance for B{sub 12}N{sub 12} encapsulated with Na/K. - Abstract: Density functional theory (DFT) calculations have been carried out to study the influence of alkali metals (Li, Na and K) encapsulation within the group III nitrides (B{sub 12}N{sub 12}, Al{sub 12}N{sub 12} and Ga{sub 12}N{sub 12}) and the group IV carbides (C{sub 24}, Si{sub 12}C{sub 12}and Ge{sub 12}C{sub 12}) nanoclusters. The encapsulation of Li, Na and K atoms is found to narrow the HOMO–LUMO gaps of the considered clusters. The electronic properties of these clusters, especially the group III nitrides nanoclusters, are strongly sensitive to interaction with the alkali metals. Moreover it is observed that the encapsulation of alkali metals enhances the first hyperpolarizabilities of B{sub 12}N{sub 12} nanocluster. Surprisingly, due to the alkali metals encapsulation within B{sub 12}N{sub 12} nanocluster, the first hyperpolarizability values are remarkably increased to 8505.49 and 122,503.76 a.u. for Na@B{sub 12}N{sub 12} and K@B{sub 12}N{sub 12}, respectively. Also the TD-DFT calculations at both CAM-B3LYP/6-311+G(d) and PBE0/6-311+G(d) levels of theory are also performed to investigate the origin of first hyperpolarizabilities.

  14. Process for the preparation of fine grain metal carbide powders

    International Nuclear Information System (INIS)

    Gortsema, F.P.

    1976-01-01

    Fine grain metal carbide powders are conveniently prepared from the corresponding metal oxide by heating in an atmosphere of methane in hydrogen. Sintered articles having a density approaching the theoretical density of the metal carbide itself can be fabricated from the powders by cold pressing, hot pressing or other techniques. 8 claims, no drawings

  15. Demonstration of AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistors with silicon-oxy-nitride as the gate insulator

    International Nuclear Information System (INIS)

    Balachander, K.; Arulkumaran, S.; Egawa, T.; Sano, Y.; Baskar, K.

    2005-01-01

    AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistors (MOSHEMTs) were fabricated with plasma enhanced chemical vapor deposited silicon oxy-nitride (SiON) as an insulating layer. The compositions of SiON thin films were confirmed using X-ray photoelectron spectroscopy. The fabricated MOSHEMTs exhibited a very high saturation current density of 1.1 A/mm coupled with high positive operational gate voltage up to +7 V. The MOSHEMTs also exhibited four orders of low gate leakage current and high forward-on voltage when compared with the conventional HEMTs. The drain current collapse using gate pulse measurements showed only a negligible difference in the saturation current density revealing the drastic improvement in passivation of the surface states due to the high quality of dielectric thin films deposited. Thus, based on the improved direct-current operation, SiON can be considered to be a potential gate oxide comparable with other dielectric insulators

  16. Toward High Performance 2D/2D Hybrid Photocatalyst by Electrostatic Assembly of Rationally Modified Carbon Nitride on Reduced Graphene Oxide

    Science.gov (United States)

    Chen, Jian; Xu, Xiaochan; Li, Tao; Pandiselvi, Kannusamy; Wang, Jingyu

    2016-11-01

    Efficient metal-free visible photocatalysts with high stability are highly desired for sufficient utilization of solar energy. In this work, the popular carbon nitride (CN) photocatalyst is rationally modified by acid exfoliation of molecular grafted CN, achieving improved visible-light utilization and charge carriers mobility. Moreover, the modification process tuned the surface electrical property of CN, which enabled it to be readily coupled with the oppositely charged graphene oxide during the following photo-assisted electrostatic assembly. Detailed characterizations indicate the formation of well-contacted 2D/2D heterostructure with strong interfacial interaction between the modified CN nanosheets (CNX-NSs) and reduced graphene oxide (RGO). The optimized hybrid (with a RGO ratio of 20%) exhibits the best photocatalytic performance toward MB degradation, which is almost 12.5 and 7.0 times of CN under full spectrum and visible-light irradiation, respectively. In addition, the hybrid exhibits high stability after five successive cycles with no obvious change in efficiency. Unlike pure CNX-NSs, the dye decomposition mostly depends on the H2O2 generation by a two-electron process due to the electron reservoir property of RGO. Thus the enhancement in photocatalytic activity could be ascribed to the improved light utilization and increased charge transfer ability across the interface of CNX-NSs/RGO heterostructure.

  17. An ultrasensitive electrochemiluminescent immunosensor based on graphene oxide coupled graphite-like carbon nitride and multiwalled carbon nanotubes-gold for the detection of diclofenac.

    Science.gov (United States)

    Hu, Liuyi; Zheng, Jing; Zhao, Kang; Deng, Anping; Li, Jianguo

    2018-03-15

    In this study, a novel competition-type electrochemiluminescent (ECL) immunosensor for detecting diclofenac (DCF) was fabricated with graphene oxide coupled graphite-like carbon nitride (GO-g-C 3 N 4 ) as signal probe for the first time. The ECL intensity of carboxylated g-C 3 N 4 was significantly enhanced after being combined with graphene oxide (GO) which exhibited excellent charge-transport property. The sensing platform was constructed by multiwalled carbon nanotubes and gold nanoparticles (MWCNTs-AuNPs), which not only provided an effective matrix for immobilizing a large amount of coating antigen but also facilitated the electronic transmission rate to enhance the ECL intensity. Based on the synergistic effect of GO-g-C 3 N 4 and MWCNTs-AuNPs composite, the proposed sensor showed high sensitivity, good stability, and wide linearity for the detection of DCF in the range of 0.005-1000ngmL -1 with a detection limit of 1.7pgmL -1 . Furthermore, the developed immunoassay has been applied to real samples with satisfactory results. Therefore, this work provided a promising method for the detection of DCF and other small molecular compounds in the future. Copyright © 2017 Elsevier B.V. All rights reserved.

  18. Corrosion resistant cemented carbide

    International Nuclear Information System (INIS)

    Hong, J.

    1990-01-01

    This paper describes a corrosion resistant cemented carbide composite. It comprises: a granular tungsten carbide phase, a semi-continuous solid solution carbide phase extending closely adjacent at least a portion of the grains of tungsten carbide for enhancing corrosion resistance, and a substantially continuous metal binder phase. The cemented carbide composite consisting essentially of an effective amount of an anti-corrosion additive, from about 4 to about 16 percent by weight metal binder phase, and with the remaining portion being from about 84 to about 96 percent by weight metal carbide wherein the metal carbide consists essentially of from about 4 to about 30 percent by weight of a transition metal carbide or mixtures thereof selected from Group IVB and of the Periodic Table of Elements and from about 70 to about 96 percent tungsten carbide. The metal binder phase consists essentially of nickel and from about 10 to about 25 percent by weight chromium, the effective amount of an anti-corrosion additive being selected from the group consisting essentially of copper, silver, tine and combinations thereof

  19. Plasma nitriding of steels

    CERN Document Server

    Aghajani, Hossein

    2017-01-01

    This book focuses on the effect of plasma nitriding on the properties of steels. Parameters of different grades of steels are considered, such as structural and constructional steels, stainless steels and tools steels. The reader will find within the text an introduction to nitriding treatment, the basis of plasma and its roll in nitriding. The authors also address the advantages and disadvantages of plasma nitriding in comparison with other nitriding methods. .

  20. Effect of ion beam bombardment on the carbide in M2 steel modified by ion-beam-assisted deposition

    Energy Technology Data Exchange (ETDEWEB)

    Li, X.Y.; Wang, F.J.; Wang, Y.K. (Dept. of Materials Engineering, Dalian Univ. of Technology (China)); Ma, T.C. (National Lab. of Materials Modification by Beam Three, Dalian (China))

    1991-10-30

    Transmission electron microscopy was used to study the effect of nitrogen ion bombardment with different doses on the carbides in M2 high speed steel as the nitrogen ions penetrated into the nitride films during ion-beam-assisted deposition. With different doses of nitrogen, alterations in the morphological characteristics of the carbide M6C at the interface were observed. With lower doses, knitting-like contrast within the carbide showed subboundary structure defects in M6C. With increasing dose, the substructure defects were broken up into small fragments owing to heavy bombardment. The microstructures of carbides at the interface damaged by nitrogen ions are discussed in detail. (orig.).

  1. Molybdenum carbide-carbon nanocomposites synthesized from a reactive template for electrochemical hydrogen evolution

    KAUST Repository

    Alhajri, Nawal Saad

    2014-01-01

    Molybdenum carbide nanocrystals (Mo2C) with sizes ranging from 3 to 20 nm were synthesized within a carbon matrix starting from a mesoporous graphitic carbon nitride (mpg-C3N4) template with confined pores. A molybdenum carbide phase (Mo2C) with a hexagonal structure was formed using a novel synthetic method involving the reaction of a molybdenum precursor with the carbon residue originating from C3N4 under nitrogen at various temperatures. The synthesized nanocomposites were characterized using powder X-ray diffraction (XRD), temperature-programmed reaction with mass spectroscopy (MS), CHN elemental analyses, thermogravimetric analyses (TGA), nitrogen sorption, X-ray photoelectron spectroscopy (XPS), and transmission electron microscopy (TEM). The results indicated that the synthesized samples have different surface structures and compositions, which are accordingly expected to exhibit different electrocatalytic activities toward the hydrogen evolution reaction (HER). Electrochemical measurements demonstrated that the sample synthesized at 1323 K exhibited the highest and most stable HER current in acidic media, with an onset potential of -100 mV vs. RHE, among the samples prepared in this study. This result is attributed to the sufficiently small particle size (∼8 nm on average) and accordingly high surface area (308 m2 g-1), with less oxidized surface entrapped within the graphitized carbon matrix. © 2014 the Partner Organisations.

  2. Characterization of Nanometric-Sized Carbides Formed During Tempering of Carbide-Steel Cermets

    Directory of Open Access Journals (Sweden)

    Matus K.

    2016-06-01

    Full Text Available The aim of this article of this paper is to present issues related to characterization of nanometric-sized carbides, nitrides and/or carbonitrides formed during tempering of carbide-steel cermets. Closer examination of those materials is important because of hardness growth of carbide-steel cermet after tempering. The results obtained during research show that the upswing of hardness is significantly higher than for high-speed steels. Another interesting fact is the displacement of secondary hardness effect observed for this material to a higher tempering temperature range. Determined influence of the atmosphere in the sintering process on precipitations formed during tempering of carbide-steel cermets. So far examination of carbidesteel cermet produced by powder injection moulding was carried out mainly in the scanning electron microscope. A proper description of nanosized particles is both important and difficult as achievements of nanoscience and nanotechnology confirm the significant influence of nanocrystalline particles on material properties even if its mass fraction is undetectable by standard methods. The following research studies have been carried out using transmission electron microscopy, mainly selected area electron diffraction and energy dispersive spectroscopy. The obtained results and computer simulations comparison were made.

  3. Space-confined preparation of high surface area tungsten oxide and tungsten nitride inside the pores of mesoporous silica SBA-15

    DEFF Research Database (Denmark)

    Meyer, Simon; Beyer, Hans; Köhler, Klaus

    2015-01-01

    For the direct preparation of high surface area nitride materials, a lack of suitable precursors exists. Indirect preparation by gas phase nitridation (e.g. by ammonia) requires high temperatures and often results in sintering. The present work demonstrates that the space-confined preparation of ...

  4. Flexible polyimide films hybrid with functionalized boron nitride and graphene oxide simultaneously to improve thermal conduction and dimensional stability.

    Science.gov (United States)

    Tsai, Mei-Hui; Tseng, I-Hsiang; Chiang, Jen-Chi; Li, Jheng-Jia

    2014-06-11

    Coupling agent-functionalized boron nitride (f-BN) and glycidyl methacrylate-grafted graphene (g-TrG) are simultaneously blended with polyimide (PI) to fabricate a flexible, electrically insulating and thermally conductive PI composite film. The silk-like g-TrG successfully fills in the gap between PI and f-BN to complete the thermal conduction network. In addition, the strong interaction between surface functional groups on f-BN and g-TrG contributes to the effective phonon transfer in the PI matrix. The thermal conductivity (TC) of the PI/f-BN composite films containing additional 1 wt % of g-TrG is at least doubled to the value of PI/f-BN and as high as 16 times to that of the pure PI. The hybrid film PI/f-BN-50/g-TrG-1 exhibits excellent flexibility, sufficient insulating property, the highest TC of 2.11 W/mK, and ultralow coefficient of thermal expansion of 11 ppm/K, which are perfect conditions for future flexible substrate materials requiring efficient heat dissipation.

  5. GEN IV: Carbide Fuel Elaboration for the 'Futurix Concepts' experiment

    Energy Technology Data Exchange (ETDEWEB)

    Vaudez, Stephane; Riglet-Martial, Chantal; Paret, Laurent; Abonneau, Eric [Commissariat a l' Energie Atomique (C.E.A.), Direction de l' Energie Nucleaire, Centre d' Etudes de Cadarache, 13108 Saint Paul lez Durance Cedex (France)

    2008-07-01

    In order to collect information on the behaviour of the future GFR (Gas Fast Reactor) fuel under fast neutron irradiation, an experimental irradiation program, called 'Futurix-concepts' has been launched at the CEA. The considered concept is a composite material made of a fissile fuel embedded in an inert ceramic matrix. Fissile fuel pellets are made of UPuN or UPuC while ceramics are SiC for the carbide fuel and TiN for the nitride fuel. This paper focuses on the description of the carbide composite fabrication. The UPuC pellets are manufactured using a metallurgical powder process. Fabrication and handling of the fuels are carried out in glove boxes under a nitrogen atmosphere. Carbide fuel is synthesized by carbo-thermic reduction under vacuum of a mixture of actinide oxide and graphitic carbon up to 1550 deg. C. After ball milling, the UPuC powder is pressed to create hexagonal or spherical compacts. They are then sintered up to 1750 deg. C in order to obtain a density of 85 % of the theoretical one. The sintered pellets are inserted into an inert and tight capsule of SiC. In order to control the gap between the fuel and the matrix precisely, the pellets are abraded. The inert matrix is then filled with the pellets and the whole system is sealed by a BRASiC{sup R} process at high temperature under a helium atmosphere. Fabrication of the sample to be irradiated was done in 2006 and the irradiation began in May 2007 in the Phenix reactor. This presentation will detail and discuss the results obtained during this fabrication phase. (authors)

  6. Enhanced performance of dye-sensitized solar cells with layered structure graphitic carbon nitride and reduced graphene oxide modified TiO2 photoanodes

    Science.gov (United States)

    Lv, Huiru; Hu, Haihua; Cui, Can; Lin, Ping; Wang, Peng; Wang, Hao; Xu, Lingbo; Pan, Jiaqi; Li, Chaorong

    2017-11-01

    TiO2/reduced graphene oxide (TiO2/rGO) composite has been widely exploited as the photoanode material for high efficient dye-sensitized solar cells (DSSCs). However, the power conversion efficiency (PCE) is limited due to the charge recombination between the rGO and electrolyte. In this paper, we incorporate 5.5 wt% layered structure graphitic carbon nitride (g-C3N4) and 0.25 wt% rGO into TiO2 nanoparticle (NP) film to form a triple-component TiO2/rGO/g-C3N4 (TGC) photoanode for DSSCs. The TGC photoanode significantly increased the dye absorption and thus to improve the light harvesting efficiency. Furthermore, the electrochemical impedance spectroscopy (EIS) analysis of the DSSCs based on TGC photoanode demonstrates that the incorporation of the rGO and g-C3N4 into TiO2 effectively accelerates the electron transfer and reduces the charge recombination. As a result, the DSSCs based on TGC film show PCE of 5.83%, enhanced by 50.1% compared with that of pure TiO2 photoanodes. This result strongly suggests a facile strategy to improve the photovoltaic performance of DSSCs.

  7. Effect of nitrogen doping on the structural, optical and electrical properties of indium tin oxide films prepared by magnetron sputtering for gallium nitride light emitting diodes

    Science.gov (United States)

    Tian, Lifei; Cheng, Guoan; Wang, Hougong; Wu, Yulong; Zheng, Ruiting; Ding, Peijun

    2017-01-01

    The indium tin oxide (ITO) films are prepared by the direct current magnetron sputtering technology with an ITO target in a mixture of argon and nitrogen gas at room temperature. The blue transmittance at 455 nm rises from 63% to 83% after nitrogen doping. The resistivity of the ITO film reduces from 4.6 × 10-3 (undoped film) to 5.7 × 10-4 Ω cm (N-doped film). The X-ray photoelectron spectroscopy data imply that the binding energy of the In3d5/2 peak is declined 0.05 eV after nitrogen doping. The high resolution transmission electron microscope images show that the nitrogen loss density of the GaN/ITO interface with N-doped ITO film is smaller than that of the GaN/ITO interface with undoped ITO film. The forward turn-on voltage of gallium nitride light emitting diode reduces by 0.5 V after nitrogen doping. The fabrication of the N-doped ITO film is conducive to modify the N component of the interface between GaN and ITO layer.

  8. 2D Layered Graphitic Carbon Nitride Sandwiched with Reduced Graphene Oxide as Nanoarchitectured Anode for Highly Stable Lithium-ion Battery

    International Nuclear Information System (INIS)

    M Subramaniyam, Chandrasekar; Deshmukh, Kavita A.; Tai, Zhixin; Mahmood, Nasir; Deshmukh, Abhay D.; Goodenough, John B.; Dou, Shi Xue; Liu, Hua Kun

    2017-01-01

    Two dimensional (2D) nanomaterials with high gravimetric capacity and rate capability are a key strategy for the anode of a Li-ion battery, but they still pose a challenge for Li-ion storage due to limited conductivity and an inability to alleviate the volume change upon lithiation and delithiation. In this paper, we report the construction of a 3D architecture anode consisting of exfoliated 2D layered graphitic carbon nitride (g-C_3N_4) and reduced graphene oxide (rGO) nanosheets (CN-rGO) by hydrothermal synthesis. First, bulk g-C_3N_4 is converted to nanosheets to increase the edge density of the inert basal planes since the edges act as active Li-storage sites. This unique 3D architecture, which consists of ultrathin g-C_3N_4 nanosheets sandwiched between conductive rGO networks, exhibits a capacity of 970 mA h g"−"1 after 300 cycles, which is 15 fold higher than the bulk g-C_3N_4. The tuning of the intrinsic structural properties of bulk g-C_3N_4 by this simple bottom-up synthesis has rendered a 3D architectured material (CN-rGO) as an effective negative electrode for high energy storage applications.

  9. Mechanical characteristics of microwave sintered silicon carbide

    Indian Academy of Sciences (India)

    In firing of products by conventionally sintered process, SiC grain gets oxidized producing SiO2 (∼ 32 wt%) and deteriorates the quality of the product substantially. Partially sintered silicon carbide by such a method is a useful material for a varieties of applications ranging from kiln furniture to membrane material.

  10. Characterization of Transition Metal Carbide Layers Synthesized by Thermo-reactive Diffusion Processes

    DEFF Research Database (Denmark)

    Laursen, Mads Brink; Fernandes, Frederico Augusto Pires; Christiansen, Thomas Lundin

    2015-01-01

    . In this study halide-activated pack cementation techniques were used on tool steel Vanadis 6 and martensitic stainless steel AISI 420 in order to produce hard layers of titanium carbide (TiC), vanadium carbide (V8C7) and chromium carbides (Cr23C6 and Cr7C3). Surface layers were characterized by scanning......Hard wear resistant surface layers of transition metal carbides can be produced by thermo-reactive diffusion processes where interstitial elements from a steel substrate together with external sources of transition metals (Ti, V, Cr etc.) form hard carbide and/or nitride layers at the steel surface...... electron microscopy, X-ray diffraction and Vickers hardness testing. The study shows that porosityfree, homogenous and very hard surface layers can be produced by thermo-reactive diffusion processes. The carbon availability of the substrate influences thickness of obtained layers, as Vanadis 6 tool steel...

  11. A series of inorganic solid nitrogen sources for the synthesis of metal nitride clusterfullerenes: the dependence of production yield on the oxidation state of nitrogen and counter ion.

    Science.gov (United States)

    Liu, Fupin; Guan, Jian; Wei, Tao; Wang, Song; Jiao, Mingzhi; Yang, Shangfeng

    2013-04-01

    A series of nitrogen-containing inorganic solid compounds with variable oxidation states of nitrogen and counter ions have been successfully applied as new inorganic solid nitrogen sources toward the synthesis of Sc-based metal nitride clusterfullerenes (Sc-NCFs), including ammonium salts [(NH4)xH(3-x)PO4 (x = 0-2), (NH4)2SO4, (NH4)2CO3, NH4X (X = F, Cl), NH4SCN], thiocyanate (KSCN), nitrates (Cu(NO3)2, NaNO3), and nitrite (NaNO2). Among them, ammonium phosphates ((NH4)xH(3-x)PO4, x = 1-3) and ammonium thiocyanate (NH4SCN) are revealed to behave as better nitrogen sources than others, and the highest yield of Sc-NCFs is achieved when NH4SCN was used as a nitrogen source. The optimum molar ratio of Sc2O3:(NH4)3PO4·3H2O:C and Sc2O3:NH4SCN:C has been determined to be 1:2:15 and 1:3:15, respectively. The thermal decomposition products of these 12 inorganic compounds have been discussed in order to understand their different performances toward the synthesis of Sc-NCFs, and accordingly the dependence of the production yield of Sc-NCFs on the oxidation state of nitrogen and counter ion is interpreted. The yield of Sc3N@C80 (I(h) + D(5h)) per gram Sc2O3 by using the N2-based group of nitrogen sources (thiocyanate, nitrates, and nitrite) is overall much lower than those by using gaseous N2 and NH4SCN, indicating the strong dependence of the yield of Sc-NCFs on the oxidation state of nitrogen, which is attributed to the "in-situ" redox reaction taking place for the N2-based group of nitrogen sources during discharging. For NH3-based group of nitrogen sources (ammonium salts) which exhibits a (-3) oxidation states of nitrogen, their performance as nitrogen sources is found to be sensitively dependent on the anion, and this is understood by considering their difference on the thermal stability and/or decomposition rate. Contrarily, for the N2-based group of nitrogen sources, the formation of Sc-NCFs is independent to both the oxidation state of nitrogen (+3 or +5) and the

  12. Oxidation resistance in air of 1-D SiC (Hi-nicalon) fibre reinforced silicon nitride ceramic matrix composite

    International Nuclear Information System (INIS)

    Dupel, P.; Veyret, J.B.

    1997-01-01

    The oxidation behaviour of a Si 3 N 4 matrix reinforced with SiC fibres (Hi-nicalon) pre-coated with a 400 nm thick pyrolytic carbon layer has been investigated in dry air in the temperature range 800-1500 C. The same study was performed for individual constituents of the composite (fibre and matrix). Two phenomena are observed in the oxidation behaviour of the composite. At low temperature (T<1200 C), the matrix oxidation is negligible, only the carbon interphase was oxidised creating an annular space between the fibres and the matrix throughout the sample. At high temperature (T≥1300 C) the rate of formation of the oxidation products of the matrix is rapid and a sealing effect is observed. While at these temperatures the interphase is protected in the bulk of the material, the time needed to seal the gap between the fibre and the matrix is too long to prevent its oxidation to a significant depth from the surface. Finally, preliminary results are presented where the consumption of the interphase is completely prevented by applying an external coating which gives oxidation protection from low to high temperature. (orig.)

  13. Duplex surface treatment of AISI 1045 steel via plasma nitriding of chromized layer

    International Nuclear Information System (INIS)

    Hakami, F.; Sohi, M. Heydarzadeh; Ghani, J. Rasizadeh

    2011-01-01

    In this work AISI 1045 steel were duplex treated via plasma nitriding of chromized layer. Samples were pack chromized by using a powder mixture consisting of ferrochromium, ammonium chloride and alumina at 1273 K for 5 h. The samples were then plasma-nitrided for 5 h at 803 K and 823 K, in a gas mixture of 75%N 2 + 25%H 2 . The treated specimens were characterized by scanning electron microscopy (SEM), X-ray diffraction (XRD) analysis and Vickers micro-hardness test. The thickness of chromized layer before nitriding was about 8 μm and it was increased after plasma nitriding. According to XRD analysis, the chromized layer was composed of chromium and iron carbides. Plasma nitriding of chromized layer resulted in the formation of chromium and iron nitrides and carbides. The hardness of the duplex layers was significantly higher than the hardness of the base material or chromized layer. The main cause of the large improvement in surface hardness was due to the formation of Cr x N and Fe x N phases in the duplex treated layers. Increasing of nitriding temperature from 803 to 823 K enhanced the formation of CrN in the duplex treated layer and increased the thickness of the nitrided layer.

  14. Tuning Material Properties of Oxides and Nitrides by Substrate Biasing during Plasma-Enhanced Atomic Layer Deposition on Planar and 3D Substrate Topographies.

    Science.gov (United States)

    Faraz, Tahsin; Knoops, Harm C M; Verheijen, Marcel A; van Helvoirt, Cristian A A; Karwal, Saurabh; Sharma, Akhil; Beladiya, Vivek; Szeghalmi, Adriana; Hausmann, Dennis M; Henri, Jon; Creatore, Mariadriana; Kessels, Wilhelmus M M

    2018-04-18

    Oxide and nitride thin-films of Ti, Hf, and Si serve numerous applications owing to the diverse range of their material properties. It is therefore imperative to have proper control over these properties during materials processing. Ion-surface interactions during plasma processing techniques can influence the properties of a growing film. In this work, we investigated the effects of controlling ion characteristics (energy, dose) on the properties of the aforementioned materials during plasma-enhanced atomic layer deposition (PEALD) on planar and 3D substrate topographies. We used a 200 mm remote PEALD system equipped with substrate biasing to control the energy and dose of ions by varying the magnitude and duration of the applied bias, respectively, during plasma exposure. Implementing substrate biasing in these forms enhanced PEALD process capability by providing two additional parameters for tuning a wide range of material properties. Below the regimes of ion-induced degradation, enhancing ion energies with substrate biasing during PEALD increased the refractive index and mass density of TiO x and HfO x and enabled control over their crystalline properties. PEALD of these oxides with substrate biasing at 150 °C led to the formation of crystalline material at the low temperature, which would otherwise yield amorphous films for deposition without biasing. Enhanced ion energies drastically reduced the resistivity of conductive TiN x and HfN x films. Furthermore, biasing during PEALD enabled the residual stress of these materials to be altered from tensile to compressive. The properties of SiO x were slightly improved whereas those of SiN x were degraded as a function of substrate biasing. PEALD on 3D trench nanostructures with biasing induced differing film properties at different regions of the 3D substrate. On the basis of the results presented herein, prospects afforded by the implementation of this technique during PEALD, such as enabling new routes for

  15. New Routes to Lanthanide and Actinide Nitrides

    Energy Technology Data Exchange (ETDEWEB)

    Butt, D.P.; Jaques, B.J.; Osterberg, D.D. [Boise State University, 1910 University Dr., Boise, Idaho 83725-2075 (United States); Marx, B.M. [Concurrent Technologies Corporation, Johnstown, PA (United States); Callahan, P.G. [Carnegie Mellon University, Pittsburgh, PA (United States); Hamdy, A.S. [Central Metallurgical R and D Institute, Helwan, Cairo (Egypt)

    2009-06-15

    The future of nuclear energy in the U.S. and its expansion worldwide depends greatly on our ability to reduce the levels of high level waste to minimal levels, while maintaining proliferation resistance. Implicit in the so-called advanced fuel cycle is the need for higher levels of fuel burn-up and consequential use of complex nuclear fuels comprised of fissile materials such as Pu, Am, Np, and Cm. Advanced nitride fuels comprised ternary and quaternary mixtures of uranium and these actinides have been considered for applications in advanced power plants, but there remain many processing challenges as well as necessary qualification testing. In this presentation, the advantages and disadvantages of nitride fuels are discussed. Methods of synthesizing the raw materials and sintering of fuels are described including a discussion of novel, low cost routes to nitrides that have the potential for reducing the cost and footprint of a fuel processing plant. Phase pure nitrides were synthesized via four primary methods; reactive milling metal flakes in nitrogen at room temperature, directly nitriding metal flakes in a pure nitrogen atmosphere, hydriding metal flakes prior to nitridation, and carbo-thermically reducing the metal oxide and carbon mixture prior to nitridation. In the present study, the sintering of UN, DyN, and their solid solutions (U{sub x}, Dy{sub 1-x}) (x = 1 to 0.7) were also studied. (authors)

  16. The failure of aluminium nitride under shock

    International Nuclear Information System (INIS)

    Pickup, I.M.; Bourne, N.K.

    2002-01-01

    The shear strength of aluminium nitride has been measured over a range of impact stresses by measuring lateral stresses in plate impact experiments. The range of impact stress spanned several key shock thresholds for the material, pre and post Hugoniot elastic limit and up to values where the hexagonal to cubic phase transition starts. The shear strength measurements indicate significant inelastic damage at stress levels in excess of the HEL, but a significant recovery of strength at the highest impact stress was observed. This stress equates to the phase transition stress. The shear strength behaviour is compared to that of silicon carbide, which does not exhibit a phase change at these impact velocities

  17. Development of pseudocapacitive molybdenum oxide–nitride for electrochemical capacitors

    Energy Technology Data Exchange (ETDEWEB)

    Ting, Yen-Jui Bernie [Department of Electrical and Computer Engineering, University of Toronto, Toronto, Ontario M5S 3E4 (Canada); Wu, Haoran [Department of Materials Science and Engineering, University of Toronto, Toronto, Ontario M5S 3E4 (Canada); Kherani, Nazir P. [Department of Electrical and Computer Engineering, University of Toronto, Toronto, Ontario M5S 3E4 (Canada); Department of Materials Science and Engineering, University of Toronto, Toronto, Ontario M5S 3E4 (Canada); Lian, Keryn, E-mail: keryn.lian@utoronto.ca [Department of Materials Science and Engineering, University of Toronto, Toronto, Ontario M5S 3E4 (Canada)

    2015-03-15

    A thin film Mo oxide–nitride pseudocapacitive electrode was synthesized by electrodeposition of Mo oxide on Ti and a subsequent low-temperature (400 °C) thermal nitridation. Two nitridation environments, N{sub 2} and NH{sub 3}, were used and the results were compared. Surface analyses of these nitrided films showed partial conversion of Mo oxide to nitrides, with a lower conversion percentage being the film produced in N{sub 2}. However, the electrochemical analyses showed that the surface of the N{sub 2}-treated film had better pseudocapacitive behaviors and outperformed that nitrided in NH{sub 3}. Cycle life of the resultant N{sub 2}-treated Mo oxide–nitride was also much improved over Mo oxide. A two-electrode cell using Mo oxide–nitride electrodes was demonstrated and showed high rate performance. - Highlights: • Mo(O,N){sub x} was developed by electrodeposition and nitridation in N{sub 2} or NH{sub 3}. • N{sub 2} treated Mo(O,N){sub x} showed a capacitive performance superior to that treated by NH{sub 3}. • The promising electrochemical performance was due to the formation of γ-Mo{sub 2}N.

  18. Preparation of uranium nitride

    International Nuclear Information System (INIS)

    Potter, R.A.; Tennery, V.J.

    1976-01-01

    A process is described for preparing actinide-nitrides from massive actinide metal which is suitable for sintering into low density fuel shapes by partially hydriding the massive metal and simultaneously dehydriding and nitriding the dehydrided portion. The process is repeated until all of the massive metal is converted to a nitride

  19. Fission product phases in irradiated carbide fuels

    International Nuclear Information System (INIS)

    Ewart, F.T.; Sharpe, B.M.; Taylor, R.G.

    1975-09-01

    Oxide fuels have been widely adopted as 'first charge' fuels for demonstration fast reactors. However, because of the improved breeding characteristics, carbides are being investigated in a number of laboratories as possible advanced fuels. Irradiation experiments on uranium and mixed uranium-plutonium carbides have been widely reported but the instances where segregate phases have been found and subjected to electron probe analysis are relatively few. Several observations of such segregate phases have now been made over a period of time and these are collected together in this document. Some seven fuel pins have been examined. Two of the irradiations were in thermal materials testing reactors (MTR); the remainder were experimental assemblies of carbide gas bonded oxycarbide and sodium bonded oxycarbide in the Dounreay Fast Reactor (DFR). All fuel pins completed their irradiation without failure. (author)

  20. Simple process to fabricate nitride alloy powders

    International Nuclear Information System (INIS)

    Yang, Jae Ho; Kim, Dong-Joo; Kim, Keon Sik; Rhee, Young Woo; Oh, Jang-Soo; Kim, Jong Hun; Koo, Yang Hyun

    2013-01-01

    Uranium mono-nitride (UN) is considered as a fuel material [1] for accident-tolerant fuel to compensate for the loss of fissile fuel material caused by adopting a thickened cladding such as SiC composites. Uranium nitride powders can be fabricated by a carbothermic reduction of the oxide powders, or the nitriding of metal uranium. Among them, a direct nitriding process of metal is more attractive because it has advantages in the mass production of high-purity powders and the reusing of expensive 15 N 2 gas. However, since metal uranium is usually fabricated in the form of bulk ingots, it has a drawback in the fabrication of fine powders. The Korea Atomic Energy Research Institute (KAERI) has a centrifugal atomisation technique to fabricate uranium and uranium alloy powders. In this study, a simple reaction method was tested to fabricate nitride fuel powders directly from uranium metal alloy powders. Spherical powder and flake of uranium metal alloys were fabricated using a centrifugal atomisation method. The nitride powders were obtained by thermal treating the metal particles under nitrogen containing gas. The phase and morphology evolutions of powders were investigated during the nitriding process. A phase analysis of nitride powders was also part of the present work. KAERI has developed the centrifugal rotating disk atomisation process to fabricate spherical uranium metal alloy powders which are used as advanced fuel materials for research reactors. The rotating disk atomisation system involves the tasks of melting, atomising, and collecting. A nozzle in the bottom of melting crucible introduces melt at the center of a spinning disk. The centrifugal force carries the melt to the edge of the disk and throws the melt off the edge. Size and shape of droplets can be controlled by changing the nozzle size, the disk diameter and disk speed independently or simultaneously. By adjusting the processing parameters of the centrifugal atomiser, a spherical and flake shape

  1. Conceptual design study of LMFBR core with carbide fuel

    International Nuclear Information System (INIS)

    Tezuka, H.; Hojuyama, T.; Osada, H.; Ishii, T.; Hattori, S.; Nishimura, T.

    1987-01-01

    Carbide fuel is a hopeful candidate for demonstration FBR(DFBR) fuel from the plant cost reduction point of view. High thermal conductivity and high heavy metal content of carbide fuel lead to high linear heat rate and high breeding ratio. We have analyzed carbide fuel core characteristics and have clarified the concept of carbide fuel core. By survey calculation, we have obtained a correlation map between core parameters and core characteristics. From the map, we have selected a high efficiency core whose features are better than those of an oxide core, and have obtained reactivity coefficients. The core volume and the reactor fuel inventory are approximately 20% smaller, and the burn-up reactivity loss is 50% smaller compared with the oxide fuel core. These results will reduce the capital cost. The core reactivity coefficients are similar to the conventional oxide DFBR's. Therefore the carbide fuel core is regarded as safe as the oxide core. Except neutron fluence, the carbide fuel core has better nuclear features than the oxide core

  2. Separation of zirconium--hafnium by nitride precipitation

    International Nuclear Information System (INIS)

    Anderson, R.N.; Parlee, N.A.

    1977-01-01

    A method is described for the separation of a light reactive metal (e.g., zirconium) from a heavy reactive metal (e.g., hafnium) by forming insoluble nitrides of the metals in a molten metal solvent (e.g., copper) inert to nitrogen and having a suitable density for the light metal nitride to form a separate phase in the upper portion of the solvent and for the heavy metal nitride to form a separate phase in the lower portion of the solvent. Nitriding is performed by maintaining a nitrogen-containing atmosphere over the bath. The light and heavy metals may be an oxide mixture and carbothermically reduced to metal form in the same bath used for nitriding. The nitrides are then separately removed and decomposed to form the desired separate metals. 16 claims, 1 figure

  3. Tribology of carbide derived carbon films synthesized on tungsten carbide

    Science.gov (United States)

    Tlustochowicz, Marcin

    Tribologically advantageous films of carbide derived carbon (CDC) have been successfully synthesized on binderless tungsten carbide manufactured using the plasma pressure compaction (P2CRTM) technology. In order to produce the CDC films, tungsten carbide samples were reacted with chlorine containing gas mixtures at temperatures ranging from 800°C to 1000°C in a sealed tube furnace. Some of the treated samples were later dechlorinated by an 800°C hydrogenation treatment. Detailed mechanical and structural characterizations of the CDC films and sliding contact surfaces were done using a series of analytical techniques and their results were correlated with the friction and wear behavior of the CDC films in various tribosystems, including CDC-steel, CDC-WC, CDC-Si3N4 and CDC-CDC. Optimum synthesis and treatment conditions were determined for use in two specific environments: moderately humid air and dry nitrogen. It was found that CDC films first synthesized at 1000°C and then hydrogen post-treated at 800°C performed best in air with friction coefficient values as low as 0.11. However, for dry nitrogen applications, no dechlorination was necessary and both hydrogenated and as-synthesized CDC films exhibited friction coefficients of approximately 0.03. A model of tribological behavior of CDC has been proposed that takes into consideration the tribo-oxidation of counterface material, the capillary forces from adsorbed water vapor, the carbon-based tribofilm formation, and the lubrication effect of both chlorine and hydrogen.

  4. Synthesis of Uranium nitride powders using metal uranium powders

    International Nuclear Information System (INIS)

    Yang, Jae Ho; Kim, Dong Joo; Oh, Jang Soo; Rhee, Young Woo; Kim, Jong Hun; Kim, Keon Sik

    2012-01-01

    Uranium nitride (UN) is a potential fuel material for advanced nuclear reactors because of their high fuel density, high thermal conductivity, high melting temperature, and considerable breeding capability in LWRs. Uranium nitride powders can be fabricated by a carbothermic reduction of the oxide powders, or the nitriding of metal uranium. The carbothermic reduction has an advantage in the production of fine powders. However it has many drawbacks such as an inevitable engagement of impurities, process burden, and difficulties in reusing of expensive N 15 gas. Manufacturing concerns issued in the carbothermic reduction process can be solved by changing the starting materials from oxide powder to metals. However, in nitriding process of metal, it is difficult to obtain fine nitride powders because metal uranium is usually fabricated in the form of bulk ingots. In this study, a simple reaction method was tested to fabricate uranium nitride powders directly from uranium metal powders. We fabricated uranium metal spherical powder and flake using a centrifugal atomization method. The nitride powders were obtained by thermal treating those metal particles under nitrogen containing gas. We investigated the phase and morphology evolutions of powders during the nitriding process. A phase analysis of nitride powders was also a part of the present work

  5. Effect of boron nitride coating on fiber-matrix interactions

    International Nuclear Information System (INIS)

    Singh, R.N.; Brun, M.K.

    1987-01-01

    Coatings can modify fiber-matrix reactions and consequently interfacial bond strengths. Commercially available mullite, silicon carbide, and carbon fibers were coated with boron nitride via low pressure chemical vapor deposition and incorporated into a mullite matrix by hot-pressing. The influence of fiber-matrix interactions for uncoated fibers on fracture morphologies was studied. These observations are related to the measured values of interfacial shear strengths

  6. Efficient visible-light photocatalytic oxidation of gaseous NO with graphitic carbon nitride (g–C_3N_4) activated by the alkaline hydrothermal treatment and mechanism analysis

    International Nuclear Information System (INIS)

    Nie, Haoyu; Ou, Man; Zhong, Qin; Zhang, Shule; Yu, Lemeng

    2015-01-01

    Highlights: • Various porous g–C_3N_4 samples were obtained by the alkaline hydrothermal treatment. • 0.12CN possesses the largest BET specific surface area and pore volume. • The NO conversion in the presence of 0.12CN reaches 40.4%. • Reasons for the enhanced PCO performance with treated g–C_3N_4 was analyzed. • Further mechanism of the PCO of NO relevant with active species was investigated. - Abstract: In this paper, an enhanced visible-light photocatalytic oxidation (PCO) of NO (∼400 ppm) in the presence of the graphitic carbon nitride (g–C_3N_4) treated by the alkaline hydrothermal treatment is evaluated. Various g–C_3N_4 samples were treated in different concentrations of NaOH solutions and the sample treated in 0.12 mol L"−"1 of NaOH solution possesses the largest BET specific surface area as well as the optimal ability of the PCO of NO. UV–vis diffuse reflection spectra (DRS) and photoluminescence (PL) spectra were also conducted, and the highly improved photocatalytic performance is ascribed to the large specific surface area and high pore volume, which provides more adsorption and active sites, the wide visible-light adsorption edge and the narrow band gap, which is favorable for visible-light activation, as well as the decreased recombination rate of photo-generated electrons and holes, which could contribute to the production of active species. Fluorescence spectra and a trapping experiment were conducted to further the mechanism analysis of the PCO of NO, illustrating that superoxide radicals (·O_2"−) play the dominant role among active species in the PCO of NO.

  7. Reaction of Oxygen with Chromium and Chromium Carbide at Low O2 Pressures and High Temperatures

    International Nuclear Information System (INIS)

    Hur, Dong O.; Kang, Sung G.; Paik, Young N.

    1984-01-01

    The oxidation rate of chromium carbide has been measured continuously using thermogravimetric analysis at different oxygen pressures ranging from 1.33x10 -2 to 2.67x10 -1 Pa O 2 at 1000-1300 .deg. C. The oxidation of pure chromium has also been studied between 1000-1300 .deg. C under 6.67x10 -2 Pa O 2 and compared with that of chromium carbide. The oxidation of chromium carbide showed a linear behavior which was different from that of chromium. The oxidation rate of chromium carbide increased with increasing temperature and oxygen pressure was lower than of pure chromium. Above 1200 .deg. C, the volatile oxide was formed and evaporated causing a weight loss. The compositions and morphology of the oxide were studied with X-ray diffractometer and scanning electron microscope, respectively. The morphology of oxide changed with varying temperature and pressure. The oxide scale was consisted of mainly two different layers of Cr 2 O 3 and CrO, and the properties of oxide scale were correlated with oxidation behavior. The oxide film formed in the above test condition has been detached from the carbide surface. The crack and pore were thought to be from CO gas evolving at the interface of chromium carbide and its oxide and the major factor of the linear behavior of chromium carbide

  8. Shock Response of Boron Carbide

    National Research Council Canada - National Science Library

    Dandekar, D. P. (Dattatraya Purushottam)

    2001-01-01

    .... The present work was undertaken to determine tensile/spall strength of boron carbide under plane shock wave loading and to analyze all available shock compression data on boron carbide materials...

  9. Conversion of MX nitrides to Z-phase in a martensitic 12% Cr steel

    DEFF Research Database (Denmark)

    Cipolla, L.; Danielsen, Hilmar Kjartansson; Venditti, D.

    2010-01-01

    A 12% Cr model steel was designed with the purpose of studying the nucleation and growth of modified Z-phase, Cr(V,Nb)N. The model alloy develops Z-phase after relatively short ageing times and contains only nitrides of Cr, V and Nb. Interferences from the presence of carbides and the development...

  10. [Nitrid oxide, levosimendan and sildenafile in a patient with right ventricle dysfunction and severe pulmonary hypertension after cardiac surgery].

    Science.gov (United States)

    Aleixandre, L; Cortell, J; Vicente, R; Herrera, P; Loro, J M; Valera, F

    2014-11-01

    Pulmonary hypertension (PHT) and the resulting right ventricle dysfunction are important risk factors in patients who undergo cardiac surgery. The treatment of PHT and right ventricle dysfunction should be focused on maintaining the correct right ventricle after load, improving right ventricle function and reducing the right ventricle pre-load and therefore reducing pulmonary vascular resistance by means of vasodilators. A combined therapy of vasodilators and medicines which have different mechanisms of action, is becoming an option for the treatment of PHT. We present a 65 year old woman that suffered from mitral regurgitation, aortic valve disease, tricuspid and ascending aortic dilation with 115mmHg of pulmonary artery pressure (by ultrasound evaluation). The patient was operated on of mitral, aortic valve and tricuspid plastia and proximal aortic artery plastia as well. Previosly to surgery the patient suffered right ventricle dysfunction and PHT and was treated with nitric oxide, intravenous sildenafil and levosimendan. Subsequent evolution was satisfactory, PHT being controlled, without arterial hypotension nor respiratory alterations. Copyright © 2013 Sociedad Española de Anestesiología, Reanimación y Terapéutica del Dolor. Publicado por Elsevier España, S.L.U. All rights reserved.

  11. Radiation-induced interface state generation in MOS devices with reoxidised nitrided SiO2 gate dielectrics

    International Nuclear Information System (INIS)

    Lo, G.Q.; Shih, D.K.; Ting, W.; Kwong, D.L.

    1989-01-01

    In this letter, the radiation-induced interface state generation ΔD it in MOS devices with reoxidised nitrided gate oxides has been studied. The reoxidised nitrided oxides were fabricated by rapid thermal reoxidation (RTO) of rapidly thermal nitrided (RTN) SiO 2 . The devices were irradiated by exposure to X-rays at doses of 0.5-5.0 Mrad (Si). It is found that the RTO process improves the radiation hardness of RTN oxides in terms of interface state generation. The enhanced interface ''hardness'' of reoxidised nitrided oxides is attributed to the strainless interfacial oxide regrowth or reduction of hydrogen concentration during RTO of RTN oxides. (author)

  12. NMR studies of actinide carbide and nitride electronic properties

    International Nuclear Information System (INIS)

    Boutard, Jean-Louis

    1976-12-01

    N.M.R. studies applied to 13 C and 15 N in the solid solutions ThCsub(1-x)Nsub(x), UCsub(1-x)Nsub(x) and in the compounds ThCsub(1-x) and U 2 C 3 , were undertaken to study carbon and nitrogen contribution to chemical bonds and magnetism. For THORIUM MONOCARBIDE AND CARBONITRIDE: ThCsub(1-x) and ThCsub(1-x)Nsub(x), the very strong orbital contribution to the frequency shift reveals an important covalent character of the valence band 6d metal and 2p metalloid states. The ThCsub(1-x) band structure stoichiometry variation is due to 6dγ metal states appearing at the Fermi level and is in-opposition to a rigid band model. A non-saturated bond mechanism is suggested. For URANIUM CARBONITRIDE: UCsub(1-x)Nsub(x), in the concentration range in which no magnetic order appears at low temperature (x<0.90), the results are in opposition to a localized 5f 2 configuration model, and show that the uranium fundamental state is non-magnetic. Nevertheless two qualitatively different behaviors exist: nitrogen concentration lower than 40%: and nitrogen concentration higher than 40%. A model is proposed to account for those domains: it relies on the 5f-2p hybridization parameter which is maximum on 2p band edge (UC) and almost nul for UN. For URANIUM SESQUICARBIDE: U 2 C 3 : the N.M.R. line observation at 4.2 K indicates a non-magnetic fundamental state although the magnetic susceptibility presents a maximum at 60 K. Spin fluctuations in 5f bands are proposed to describe the electronic properties of this compound. [fr

  13. Formation mechanism of spheroidal carbide in ultra-low carbon ductile cast iron

    Directory of Open Access Journals (Sweden)

    Bin-guo Fu

    2016-09-01

    Full Text Available The formation mechanism of the spheroidal carbide in the ultra-low carbon ductile cast iron fabricated by the metal mold casting technique was systematically investigated. The results demonstrated that the spheroidal carbide belonged to eutectic carbide and crystallized in the isolated eutectic liquid phase area. The formation process of the spheroidal carbide was related to the contact and the intersection between the primary dendrite and the secondary dendrite of austenite. The oxides of magnesium, rare earths and other elements can act as heterogeneous nucleation sites for the spheroidal carbide. It was also found that the amount of the spheroidal carbide would increase with an increase in carbon content. The cooling rate has an important influence on the spheroidal carbide under the same chemical composition condition.

  14. The valve effect of the carbide interlayer of an electric resistance plug

    International Nuclear Information System (INIS)

    Lakomskii, V.

    1998-01-01

    The welded electric resistance plug (ERP) usually contains a carbide interlayer at the plug-carbon material interface. The interlayer forms during welding the contact metallic alloy with the carbon material when the oxide films of the alloy are reduced on the interface surface by carbon to the formation of carbides and the surface layer of the plug material dissolves carbon to saturation. Subsequently, during solidification of the plug material it forms carbides with the alloy components. The structural composition of the carbide interlayer is determined by the chemical composition of the contact alloy. In alloys developed by the author and his colleagues the carbide forming elements are represented in most cases by silicon and titanium and, less frequently, by chromium and manganese. Therefore, the carbide interlayers in the ERP consisted mainly of silicon and titanium carbides

  15. Modeling the Gas Nitriding Process of Low Alloy Steels

    Science.gov (United States)

    Yang, M.; Zimmerman, C.; Donahue, D.; Sisson, R. D.

    2013-07-01

    The effort to simulate the nitriding process has been ongoing for the last 20 years. Most of the work has been done to simulate the nitriding process of pure iron. In the present work a series of experiments have been done to understand the effects of the nitriding process parameters such as the nitriding potential, temperature, and time as well as surface condition on the gas nitriding process for the steels. The compound layer growth model has been developed to simulate the nitriding process of AISI 4140 steel. In this paper the fundamentals of the model are presented and discussed including the kinetics of compound layer growth and the determination of the nitrogen diffusivity in the diffusion zone. The excellent agreements have been achieved for both as-washed and pre-oxided nitrided AISI 4140 between the experimental data and simulation results. The nitrogen diffusivity in the diffusion zone is determined to be constant and only depends on the nitriding temperature, which is ~5 × 10-9 cm2/s at 548 °C. It proves the concept of utilizing the compound layer growth model in other steels. The nitriding process of various steels can thus be modeled and predicted in the future.

  16. Nitrogen transport during plasma-enhanced case nitriding of stainless steels - the effects of the passivating oxide layer; Stickstofftransport waehrend der plasmagestuetzten Randaufstickung nichtrostender Staehle - der Einfluss der passivierenden Oxidschicht

    Energy Technology Data Exchange (ETDEWEB)

    Parascandola, S.; Kruse, O.; Richter, E. [Forschungszentrum Rossendorf e.V. (FZR), Dresden (Germany). Inst. fuer Ionenstrahlphysik und Materialforschung; Moeller, W.

    1998-12-31

    Plasma-enhanced case nitriding at moderate temperatures is a promising technique for surface treatment of components made of stainless steels. In-situ ERD permits time-resolved and depth-dependent elemental analysis during the case nitriding process. This offers possibilities for process characterisation which are only briefly discussed in the paper. The oxide layer at the surface of the steel is a barrier to nitrogen input. In order to achieve fast nitrogen diffusion into the material, the oxide layer has to be largely removed in the low-energy ion implantation process. The observed equilibrium between diffusion and re-absorption is in good agreement with calculated as well as empirical results. (orig./CB) [Deutsch] Die plasmagestuetzte Randaufstickung bei moderaten Temperaturen ist eine erfolgversprechende Technologie zur Oberflaechenveredelung von Bauteilen aus nichtrostendem Stahl. Die Analytik mit in-situ ERD erlaubt zeit- und tiefenaufgeloeste Elementanalyse waehrend des Aufstickungsprozesses. Dadurch ergeben sich Moeglichkeiten der Prozesscharakterisierung, die hier nur angedeutet werden konnten. Die Oxidschicht an der Oberflaeche der nichtrostenden Staehle stellt eine Barriere fuer den Stickstoffeintrag dar. Fuer schnelle Stickstoffdiffusion muss die Oxidschicht bei der Niederenergie-Ionenimplantation weitgehend abgebaut werden. Das beobachtete Gleichgewicht zwischen Zerstaeubung und Wiederbelegung stimmt gut mit Simulationsrechnungen bzw. empirischen Werten ueberein. (orig.)

  17. Efficient and Stable CsPbBr3 Quantum-Dot Powders Passivated and Encapsulated with a Mixed Silicon Nitride and Silicon Oxide Inorganic Polymer Matrix.

    Science.gov (United States)

    Yoon, Hee Chang; Lee, Soyoung; Song, Jae Kyu; Yang, Heesun; Do, Young Rag

    2018-04-11

    Despite the excellent optical features of fully inorganic cesium lead halide (CsPbX 3 ) perovskite quantum dots (PeQDs), their unstable nature has limited their use in various optoelectronic devices. To mitigate the instability issues of PeQDs, we demonstrate the roles of dual-silicon nitride and silicon oxide ligands of the polysilazane (PSZ) inorganic polymer to passivate the surface defects and form a barrier layer coated onto green CsPbBr 3 QDs to maintain the high photoluminescence quantum yield (PLQY) and improve the environmental stability. The mixed SiN x /SiN x O y /SiO y passivated and encapsulated CsPbBr 3 /PSZ core/shell composite can be prepared by a simple hydrolysis reaction involving the addition of adding PSZ as a precursor and a slight amount of water into a colloidal CsPbBr 3 QD solution. The degree of the moisture-induced hydrolysis reaction of PSZ can affect the compositional ratio of SiN x , SiN x O y , and SiO y liganded to the surfaces of the CsPbBr 3 QDs to optimize the PLQY and the stability of CsPbBr 3 /PSZ core/shell composite, which shows a high PLQY (∼81.7%) with improved thermal, photo, air, and humidity stability as well under coarse conditions where the performance of CsPbBr 3 QDs typically deteriorate. To evaluate the suitability of the application of the CsPbBr 3 /PSZ powder to down-converted white-light-emitting diodes (DC-WLEDs) as the backlight of a liquid crystal display (LCD), we fabricated an on-package type of tricolor-WLED by mixing the as-synthesized green CsPbBr 3 /PSZ composite powder with red K 2 SiF 6 :Mn 4+ phosphor powder and a poly(methyl methacrylate)-encapsulating binder and coating this mixed paste onto a cup-type blue LED. The fabricated WLED show high luminous efficacy of 138.6 lm/W (EQE = 51.4%) and a wide color gamut of 128% and 111% without and with color filters, respectively, at a correlated color temperature of 6762 K.

  18. Growth and structure of carbide nanorods

    International Nuclear Information System (INIS)

    Lieber, C.M.; Wong, E.W.; Dai, H.; Maynor, B.W.; Burns, L.D.

    1996-01-01

    Recent research on the growth and structure of carbide nanorods is reviewed. Carbide nanorods have been prepared by reacting carbon nanotubes with volatile transition metal and main group oxides and halides. Using this approach it has been possible to obtain solid carbide nanorods of TiC, SiC, NbC, Fe 3 C, and BC x having diameters between 2 and 30 nm and lengths up to 20 microm. Structural studies of single crystal TiC nanorods obtained through reactions of TiO with carbon nanotubes show that the nanorods grow along both [110] and [111] directions, and that the rods can exhibit either smooth or saw-tooth morphologies. Crystalline SiC nanorods have been produced from reactions of carbon nanotubes with SiO and Si-iodine reactants. The preferred growth direction of these nanorods is [111], although at low reaction temperatures rods with [100] growth axes are also observed. The growth mechanisms leading to these novel nanomaterials have also been addressed. Temperature dependent growth studies of TiC nanorods produced using a Ti-iodine reactant have provided definitive proof for a template or topotactic growth mechanism, and furthermore, have yielded new TiC nanotube materials. Investigations of the growth of SiC nanorods show that in some cases a catalytic mechanism may also be operable. Future research directions and applications of these new carbide nanorod materials are discussed

  19. Graphite and boron carbide composites made by hot-pressing

    International Nuclear Information System (INIS)

    Miyazaki, K.; Hagio, T.; Kobayashi, K.

    1981-01-01

    Composites consisting of graphite and boron carbide were made by hot-pressing mixed powders of coke carbon and boron carbide. The change of relative density, mechanical strength and electrical resistivity of the composites and the X-ray parameters of coke carbon were investigated with increase of boron carbide content and hot-pressing temperature. From these experiments, it was found that boron carbide powder has a remarkable effect on sintering and graphitization of coke carbon powder above the hot-pressing temperature of 2000 0 C. At 2200 0 C, electrical resistivity of the composite and d(002) spacing of coke carbon once showed minimum values at about 5 to 10 wt% boron carbide and then increased. The strength of the composite increased with increase of boron carbide content. It was considered that some boron from boron carbide began to diffuse substitutionally into the graphite structure above 2000 0 C and densification and graphitization were promoted with the diffusion of boron. Improvements could be made to the mechanical strength, density, oxidation resistance and manufacturing methods by comparing with the properties and processes of conventional graphites. (author)

  20. Ion beam induces nitridation of silicon

    International Nuclear Information System (INIS)

    Petravic, M.; Williams, J.S.; Conway, M.

    1998-01-01

    High dose ion bombardment of silicon with reactive species, such as oxygen and nitrogen, has attracted considerable interest due to possible applications of beam-induced chemical compounds with silicon. For example, high energy oxygen bombardment of Si is now routinely used to form buried oxide layers for device purposes, the so called SIMOX structures. On the other hand, Si nitrides, formed by low energy ( 100 keV) nitrogen beam bombardment of Si, are attractive as oxidation barriers or gate insulators, primarily due to the low diffusivity of many species in Si nitrides. However, little data exists on silicon nitride formation during bombardment and its angle dependence, in particular for N 2 + bombardment in the 10 keV range, which is of interest for analytical techniques such as SIMS. In SIMS, low energy oxygen ions are more commonly used as bombarding species, as oxygen provides stable ion yields and enhances the positive secondary ion yield. Therefore, a large body of data can be found in the literature on oxide formation during low energy oxygen bombardment. Nitrogen bombardment of Si may cause similar effects to oxygen bombardment, as nitrogen and oxygen have similar masses and ranges in Si, show similar sputtering effects and both have the ability to form chemical compounds with Si. In this work we explore this possibility in some detail. We compare oxide and nitride formation during oxygen and nitrogen ion bombardment of Si under similar conditions. Despite the expected similar behaviour, some large differences in compound formation were found. These differences are explained in terms of different atomic diffusivities in oxides and nitrides, film structural differences and thermodynamic properties. (author)

  1. Electrochemical properties of lanthanum nitride with calcium nitride additions

    International Nuclear Information System (INIS)

    Lesunova, R.P.; Fishman, L.S.

    1986-01-01

    This paper reports on the electrochemical properties of lanthanum nitride with calcium nitride added. The lanthanum nitride was obtained by nitriding metallic lanthanum at 870 K in an ammonia stream. The product contained Cl, Pr, Nd, Sm, Fe, Ca, Cu, Mo, Mg, Al, Si, and Be. The calcium nitride was obtained by nitriding metallic calcium in a nitrogen stream. The conductivity on the LaN/C 3 N 2 system components are shown as a function of temperature. A table shows the solid solutions to be virtually electronic conductors and the lanthanum nitride a mixed conductor

  2. Superconducting structure with layers of niobium nitride and aluminum nitride

    International Nuclear Information System (INIS)

    Murduck, J.M.; Lepetre, Y.J.; Schuller, I.K.; Ketterson, J.B.

    1989-01-01

    A superconducting structure is formed by depositing alternate layers of aluminum nitride and niobium nitride on a substrate. Deposition methods include dc magnetron reactive sputtering, rf magnetron reactive sputtering, thin-film diffusion, chemical vapor deposition, and ion-beam deposition. Structures have been built with layers of niobium nitride and aluminum nitride having thicknesses in a range of 20 to 350 Angstroms. Best results have been achieved with films of niobium nitride deposited to a thickness of approximately 70 Angstroms and aluminum nitride deposited to a thickness of approximately 20 Angstroms. Such films of niobium nitride separated by a single layer of aluminum nitride are useful in forming Josephson junctions. Structures of 30 or more alternating layers of niobium nitride and aluminum nitride are useful when deposited on fixed substrates or flexible strips to form bulk superconductors for carrying electric current. They are also adaptable as voltage-controlled microwave energy sources. 8 figs

  3. Compressive creep of silicon nitride

    International Nuclear Information System (INIS)

    Silva, C.R.M. da; Melo, F.C.L. de; Cairo, C.A.; Piorino Neto, F.

    1990-01-01

    Silicon nitride samples were formed by pressureless sintering process, using neodymium oxide and a mixture of neodymium oxide and yttrio oxide as sintering aids. The short term compressive creep behaviour was evaluated over a stress range of 50-300 MPa and temperature range 1200 - 1350 0 C. Post-sintering heat treatments in nitrogen with a stepwise decremental variation of temperature were performed in some samples and microstructural analysis by X-ray diffraction and transmission electron microscopy showed that the secondary crystalline phase which form from the remnant glass are dependent upon composition and percentage of aditives. Stress exponent values near to unity were obtained for materials with low glass content suggesting grain boundary diffusion accommodation processes. Cavitation will thereby become prevalent with increase in stress, temperature and decrease in the degree of crystallization of the grain boundary phase. (author) [pt

  4. Problems and possibilities of development of boron nitride ceramics

    International Nuclear Information System (INIS)

    Rusanova, L.N.; Romashin, A.G.; Kulikova, G.I.; Golubeva, O.P.

    1988-01-01

    The modern state of developments in the field of technology of ceramics produced from boron nitride is analyzed. Substantial difficulties in production of pure ceramics from hexagonal and wurtzite-like boron nitride are stated as related to the structure peculiarities and inhomogeneity of chemical bonds in elementary crystal cells of various modifications. Advantages and disadvantages of familiar technological procedures in production of boron nitride ceramics are compared. A new technology is suggested, which is based on the use of electroorganic compounds for hardening and protection of porous high-purity boron-nitride die from oxidation, and as high-efficient sintered elements for treatment of powders of various structures and further pyrolisis. The method is called thermal molecular lacing (TML). Properties of ceramics produced by the TML method are compared with characteristics of well-known brands of boron nitride ceramics

  5. Strengthening of metallic alloys with nanometer-size oxide dispersions

    Science.gov (United States)

    Flinn, John E.; Kelly, Thomas F.

    1999-01-01

    Austenitic stainless steels and nickel-base alloys containing, by wt. %, 0.1 to 3.0% V, 0.01 to 0.08% C, 0.01 to 0.5% N, 0.05% max. each of Al and Ti, and 0.005 to 0.10% O, are strengthened and ductility retained by atomization of a metal melt under cover of an inert gas with added oxygen to form approximately 8 nanometer-size hollow oxides within the alloy grains and, when the alloy is aged, strengthened by precipitation of carbides and nitrides nucleated by the hollow oxides. Added strengthening is achieved by nitrogen solid solution strengthening and by the effect of solid oxides precipitated along and pinning grain boundaries to provide temperature-stabilization and refinement of the alloy grains.

  6. Strengthening of metallic alloys with nanometer-size oxide dispersions

    Science.gov (United States)

    Flinn, J.E.; Kelly, T.F.

    1999-06-01

    Austenitic stainless steels and nickel-base alloys containing, by wt. %, 0.1 to 3.0% V, 0.01 to 0.08% C, 0.01 to 0.5% N, 0.05% max. each of Al and Ti, and 0.005 to 0.10% O, are strengthened and ductility retained by atomization of a metal melt under cover of an inert gas with added oxygen to form approximately 8 nanometer-size hollow oxides within the alloy grains and, when the alloy is aged, strengthened by precipitation of carbides and nitrides nucleated by the hollow oxides. Added strengthening is achieved by nitrogen solid solution strengthening and by the effect of solid oxides precipitated along and pinning grain boundaries to provide temperature-stabilization and refinement of the alloy grains. 20 figs.

  7. UN{sub 2−x} layer formed on uranium metal by glow plasma nitriding

    Energy Technology Data Exchange (ETDEWEB)

    Long, Zhong [China Academy of Engineering Physics, P.O. Box 919-71, Mianyang 621907 (China); Hu, Yin [Science and Technology on Surface Physics and Chemistry Laboratory, P.O. Box 718-35, Mianyang 621907 (China); Chen, Lin [China Academy of Engineering Physics, P.O. Box 919-71, Mianyang 621907 (China); Luo, Lizhu [Science and Technology on Surface Physics and Chemistry Laboratory, P.O. Box 718-35, Mianyang 621907 (China); Liu, Kezhao, E-mail: liukz@hotmail.com [Science and Technology on Surface Physics and Chemistry Laboratory, P.O. Box 718-35, Mianyang 621907 (China); Lai, Xinchun, E-mail: lai319@yahoo.com [Science and Technology on Surface Physics and Chemistry Laboratory, P.O. Box 718-35, Mianyang 621907 (China)

    2015-01-25

    Highlights: • We used a very simple method to prepare nitride layer on uranium metal surface. • This modified layer is nitrogen-rich nitride, which should be written as UN{sub 2−x}. • TEM images show the nitride layer is composed of nano-sized grains. • XPS analysis indicates there is uranium with abnormal low valence in the nitride. - Abstract: Glow plasma nitriding is a simple and economical surface treatment method, and this technology was used to prepare nitride layer on the surface of uranium metal with thickness of several microns. The composition and structure of the nitride layer were analyzed by AES and XRD, indicating that this modified layer is nitrogen-rich uranium nitride, which should be written as UN{sub 2−x}. TEM images show the nitride layer is composed of nano-sized grains, with compact structure. And XPS analysis indicates there is uranium with abnormal low valence existing in the nitride. After the treated uranium storage in air for a long time, oxygen just entered the surface several nanometers, showing the nitride layer has excellent oxidation resistance. The mechanism of nitride layer formation and low valence uranium appearance is discussed.

  8. UN2−x layer formed on uranium metal by glow plasma nitriding

    International Nuclear Information System (INIS)

    Long, Zhong; Hu, Yin; Chen, Lin; Luo, Lizhu; Liu, Kezhao; Lai, Xinchun

    2015-01-01

    Highlights: • We used a very simple method to prepare nitride layer on uranium metal surface. • This modified layer is nitrogen-rich nitride, which should be written as UN 2−x . • TEM images show the nitride layer is composed of nano-sized grains. • XPS analysis indicates there is uranium with abnormal low valence in the nitride. - Abstract: Glow plasma nitriding is a simple and economical surface treatment method, and this technology was used to prepare nitride layer on the surface of uranium metal with thickness of several microns. The composition and structure of the nitride layer were analyzed by AES and XRD, indicating that this modified layer is nitrogen-rich uranium nitride, which should be written as UN 2−x . TEM images show the nitride layer is composed of nano-sized grains, with compact structure. And XPS analysis indicates there is uranium with abnormal low valence existing in the nitride. After the treated uranium storage in air for a long time, oxygen just entered the surface several nanometers, showing the nitride layer has excellent oxidation resistance. The mechanism of nitride layer formation and low valence uranium appearance is discussed

  9. Ion nitriding of aluminium

    International Nuclear Information System (INIS)

    Fitz, T.

    2002-09-01

    The present study is devoted to the investigation of the mechanism of aluminium nitriding by a technique that employs implantation of low-energy nitrogen ions and diffusional transport of atoms. The nitriding of aluminium is investigated, because this is a method for surface modification of aluminium and has a potential for application in a broad spectrum of fields such as automobile, marine, aviation, space technologies, etc. However, at present nitriding of aluminium does not find any large scale industrial application, due to problems in the formation of stoichiometric aluminium nitride layers with a sufficient thickness and good quality. For the purposes of this study, ion nitriding is chosen, as an ion beam method with the advantage of good and independent control over the process parameters, which thus can be related uniquely to the physical properties of the resulting layers. Moreover, ion nitriding has a close similarity to plasma nitriding and plasma immersion ion implantation, which are methods with a potential for industrial application. (orig.)

  10. METHOD FOR PRODUCING CEMENTED CARBIDE ARTICLES

    Science.gov (United States)

    Onstott, E.I.; Cremer, G.D.

    1959-07-14

    A method is described for making molded materials of intricate shape where the materials consist of mixtures of one or more hard metal carbides or oxides and matrix metals or binder metals thereof. In one embodiment of the invention 90% of finely comminuted tungsten carbide powder together with finely comminuted cobalt bonding agent is incorporated at 60 deg C into a slurry with methyl alcohol containing 1.5% paraffin, 3% camphor, 3.5% naphthalene, and 1.8% toluene. The compact is formed by the steps of placing the slurry in a mold at least one surface of which is porous to the fluid organic system, compacting the slurry, removing a portion of the mold from contact with the formed object and heating the formed object to remove the remaining organic matter and to sinter the compact.

  11. Oxide or carbide nanoparticles synthesized by laser ablation of a bulk Hf target in liquids and their structural, optical, and dielectric properties

    Energy Technology Data Exchange (ETDEWEB)

    Semaltianos, N. G., E-mail: nsemaltianos@yahoo.com [Department of Physics, Aristotle University of Thessaloniki, Thessaloniki 54124 (Greece); Friedt, J.-M.; Blondeau-Patissier, V.; Combe, G. [Dépt. Temps-Fréquence, Femto-st, UMR CNRS 6174, Université de Franche-Comté, Besançon 25030 (France); Chassagnon, R. [Laboratoire Interdisciplinaire Carnot De Bourgogne, ICB UMR CNRS 6303, Université de Bourgogne Franche-Comté, Dijon 21078 (France); Moutarlier, V. [UTINAM, UMR CNRS 6213, Université de Franche-Comté, Besançon 25030 (France); Assoul, M.; Monteil, G. [Dépt. Mécanique Appliquée, Femto-st, UMR CNRS 6174, Université de Franche-Comté, Besançon 25030 (France)

    2016-05-28

    Laser ablation of a bulk Hf target in deionized (DI) water, ethanol, or toluene was carried out for the production of nanoparticles' colloidal solutions. Due to the interaction of the ablation plasma plume species with the species which are produced by the liquid decomposition at the plume-liquid interface, hafnia (HfO{sub 2}) nanoparticles are synthesized in DI water, hafnium carbide (HfC) nanoparticles in toluene, and a mixture of these in ethanol. The hafnia nanoparticles are in the monoclinic low temperature phase and in the tetragonal and fcc high temperature phases. Their size distribution follows log-normal function with a median diameter in the range of 4.3–5.3 nm. Nanoparticles synthesized in DI water have band gaps of 5.6 and 5.4 eV, in ethanol 5.72 and 5.65 eV (using low and high pulse energy), and in toluene 3 eV. The values for the relative permittivity in the range of 7.74–8.90 were measured for hafnia nanoparticles' thin films deposited on substrates by drop-casting (self-assembled layers) in parallel plate capacitor structures.

  12. Molybdenum Nitride Films: Crystal Structures, Synthesis, Mechanical, Electrical and Some Other Properties

    Directory of Open Access Journals (Sweden)

    Isabelle Jauberteau

    2015-10-01

    Full Text Available Among transition metal nitrides, molybdenum nitrides have been much less studied even though their mechanical properties as well as their electrical and catalytic properties make them very attractive for many applications. The δ-MoN phase of hexagonal structure is a potential candidate for an ultra-incompressible and hard material and can be compared with c-BN and diamond. The predicted superconducting temperature of the metastable MoN phase of NaCl-B1-type cubic structure is the highest of all refractory carbides and nitrides. The composition of molybdenum nitride films as well as the structures and properties depend on the parameters of the process used to deposit the films. They are also strongly correlated to the electronic structure and chemical bonding. An unusual mixture of metallic, covalent and ionic bonding is found in the stoichiometric compounds.

  13. Conductive and robust nitride buffer layers on biaxially textured substrates

    Science.gov (United States)

    Sankar, Sambasivan [Chicago, IL; Goyal, Amit [Knoxville, TN; Barnett, Scott A [Evanston, IL; Kim, Ilwon [Skokie, IL; Kroeger, Donald M [Knoxville, TN

    2009-03-31

    The present invention relates to epitaxial, electrically conducting and mechanically robust, cubic nitride buffer layers deposited epitaxially on biaxially textured substrates such as metals and alloys. The invention comprises of a biaxially textured substrate with epitaxial layers of nitrides. The invention also discloses a method to form such epitaxial layers using a high rate deposition method as well as without the use of forming gases. The invention further comprises epitaxial layers of oxides on the biaxially textured nitride layer. In some embodiments the article further comprises electromagnetic devices which may have superconducting properties.

  14. Mechanisms of hydrogen retention in metallic beryllium and beryllium oxide and properties of ion-induced beryllium nitride; Rueckhaltemechanismen fuer Wasserstoff in metallischem Beryllium und Berylliumoxid sowie Eigenschaften von ioneninduziertem Berylliumnitrid

    Energy Technology Data Exchange (ETDEWEB)

    Oberkofler, Martin

    2011-09-22

    In the framework of this thesis laboratory experiments on atomically clean beryllium surfaces were performed. They aim at a basic understanding of the mechanisms occurring upon interaction of a fusion plasma with a beryllium first wall. The retention and the temperature dependent release of implanted deuterium ions are investigated. An atomistic description is developed through simulations and through the comparison with calculations based on density functional theory. The results of these investigations are compared to the behaviour of hydrogen upon implantation into thermally grown beryllium oxide layers. Furthermore, beryllium nitride is produced by implantation of nitrogen into metallic beryllium and its properties are investigated. The results are interpreted with regard to the use of beryllium in a fusion reactor. (orig.)

  15. Optimization of time–temperature schedule for nitridation of silicon ...

    Indian Academy of Sciences (India)

    pact was optimized by kinetic study of the reaction, 3Si + 2N2 = Si3N4 at four different temperatures (1250°C,. 1300°C, 1350°C and 1400°C). ... Reaction sintered silicon nitride; nitridation; reaction kinetics. 1. Introduction. Formation of ..... cation of silica layer resulted in active oxidation of silicon at high temperature to ...

  16. Chemical-vapor-infiltrated silicon nitride, boron nitride, and silicon carbide matrix composites

    International Nuclear Information System (INIS)

    Ventri, R.D.; Galasso, F.S.

    1990-01-01

    This paper reports composites of carbon/chemical-vapor-deposited (CVD) Si 3 N 4 , carbon/CVD BN, mullite/CVD SiC, and SiC yarn/CVD SiC prepared to determine if there were inherent toughness in these systems. The matrices were deposited at high enough temperatures to ensure that they were crystalline, which should make them more stable at high temperatures. The fiber-matrix bonding in the C/Si 3 N 4 composite appeared to be too strong; the layers of BN in the matrix of the C/BN were too weakly bonded; and the mullite/SiC composite was not as tough as the SiC/SiC composites. Only the SiC yarn/CVD SiC composite exhibited both strength and toughness

  17. Molecular coatings of nitride semiconductors for optoelectronics, electronics, and solar energy harvesting

    KAUST Repository

    Ng, Tien Khee; Zhao, Chao; Priante, Davide; Ooi, Boon S.; Hussein, Mohamed Ebaid Abdrabou

    2018-01-01

    Gallium nitride based semiconductors are provided having one or more passivated surfaces. The surfaces can have a plurality of thiol compounds attached thereto for enhancement of optoelectronic properties and/or solar water splitting properties. The surfaces can also include wherein the surface has been treated with chemical solution for native oxide removal and / or wherein the surface has attached thereto a plurality of nitrides, oxides, insulating compounds, thiol compounds, or a combination thereof to create a treated surface for enhancement of optoelectronic properties and / or solar water splitting properties. Methods of making the gallium nitride based semiconductors are also provided. Methods can include cleaning a native surface of a gallium nitride semiconductor to produce a cleaned surface, etching the cleaned surface to remove oxide layers on the surface, and applying single or multiple coatings of nitrides, oxides, insulating compounds, thiol compounds, or a combination thereof attached to the surface.

  18. Molecular coatings of nitride semiconductors for optoelectronics, electronics, and solar energy harvesting

    KAUST Repository

    Ng, Tien Khee

    2018-02-01

    Gallium nitride based semiconductors are provided having one or more passivated surfaces. The surfaces can have a plurality of thiol compounds attached thereto for enhancement of optoelectronic properties and/or solar water splitting properties. The surfaces can also include wherein the surface has been treated with chemical solution for native oxide removal and / or wherein the surface has attached thereto a plurality of nitrides, oxides, insulating compounds, thiol compounds, or a combination thereof to create a treated surface for enhancement of optoelectronic properties and / or solar water splitting properties. Methods of making the gallium nitride based semiconductors are also provided. Methods can include cleaning a native surface of a gallium nitride semiconductor to produce a cleaned surface, etching the cleaned surface to remove oxide layers on the surface, and applying single or multiple coatings of nitrides, oxides, insulating compounds, thiol compounds, or a combination thereof attached to the surface.

  19. Fabrication of aluminum nitride crucibles for molten salt and plutonium compatibility studies

    International Nuclear Information System (INIS)

    Phillips, J.A.

    1991-01-01

    The overall objective of this research was to fabricate a calcium oxide sinter-aided aluminum nitride crucible and determine the compatibility of this crucible with molten chloride salts and plutonium metal in the DOR process. Calcium oxide sinter-aided aluminum nitride was preferred over yttrium oxide sinter-aided aluminum nitride because of (1) the presence of calcium chloride, calcium oxide, and calcium metal in the molten salts utilized in the DOR process, and (2) the higher volatility of the secondary phases formed compared with phases resulting from the addition of yttrium oxide during the aluminum nitride sintering process. The calcium oxide system may yield a higher purity crystal structure with fewer secondary phases present than in the yttrium oxide system. The secondary phases that are present in the grain boundaries may be unreactive with the calcium chloride salt due to the presence of calcium in the secondary phases

  20. Two-Dimensional Titanium Carbide (MXene) as Surface-Enhanced Raman Scattering Substrate

    Energy Technology Data Exchange (ETDEWEB)

    Sarycheva, Asia [Drexel Univ., Philadelphia, PA (United States); Makaryan, Taron [Drexel Univ., Philadelphia, PA (United States); Maleski, Kathleen [Drexel Univ., Philadelphia, PA (United States); Satheeshkumar, Elumalai [National Cheng Kung Univ., Tainan (Taiwan); National Institute of Technology-Trichy, Tamil Nadu (India); Melikyan, Armen [Russian-Armenian (Slavonic) State Univ., Yerevan (Armenia); Minassian, Hayk [A. Alikhanian National Science Lab., Yerevan (Armenia); Yoshimura, Masahiro [National Cheng Kung Univ., Tainan (Taiwan); Gogotsi, Yury G. [Drexel Univ., Philadelphia, PA (United States)

    2017-08-22

    Here, noble metal (gold or silver) nanoparticles or patterned films are typically used as substrates for surface-enhanced Raman spectroscopy (SERS). Two-dimensional (2D) carbides and nitrides (MXenes) exhibit unique electronic and optical properties, including metallic conductivity and plasmon resonance in the visible or near-infrared range, making them promising candidates for a wide variety of applications. Herein, we show that 2D titanium carbide, Ti3C2Tx, enhances Raman signal from organic dyes on a substrate and in solution. As a proof of concept, MXene SERS substrates were manufactured by spray-coating and used to detect several common dyes, with calculated enhancement factors reaching ~106. Titanium carbide MXene demonstrates SERS effect in aqueous colloidal solutions, suggesting the potential for biomedical or environmental applications, where MXene can selectively enhance positively charged molecules.

  1. Metal Carbides for Biomass Valorization

    Directory of Open Access Journals (Sweden)

    Carine E. Chan-Thaw

    2018-02-01

    Full Text Available Transition metal carbides have been utilized as an alternative catalyst to expensive noble metals for the conversion of biomass. Tungsten and molybdenum carbides have been shown to be effective catalysts for hydrogenation, hydrodeoxygenation and isomerization reactions. The satisfactory activities of these metal carbides and their low costs, compared with noble metals, make them appealing alternatives and worthy of further investigation. In this review, we succinctly describe common synthesis techniques, including temperature-programmed reaction and carbothermal hydrogen reduction, utilized to prepare metal carbides used for biomass transformation. Attention will be focused, successively, on the application of transition metal carbide catalysts in the transformation of first-generation (oils and second-generation (lignocellulose biomass to biofuels and fine chemicals.

  2. Point defects in thorium nitride: A first-principles study

    Energy Technology Data Exchange (ETDEWEB)

    Pérez Daroca, D., E-mail: pdaroca@tandar.cnea.gov.ar [Gerencia de Investigación y Aplicaciones, Comisión Nacional de Energía Atómica (Argentina); Consejo Nacional de Investigaciones Científicas y Técnicas (Argentina); Llois, A.M. [Gerencia de Investigación y Aplicaciones, Comisión Nacional de Energía Atómica (Argentina); Consejo Nacional de Investigaciones Científicas y Técnicas (Argentina); Mosca, H.O. [Gerencia de Investigación y Aplicaciones, Comisión Nacional de Energía Atómica (Argentina); Instituto de Tecnología Jorge A. Sabato, UNSAM-CNEA (Argentina)

    2016-11-15

    Thorium and its compounds (carbides and nitrides) are being investigated as possible materials to be used as nuclear fuels for Generation-IV reactors. As a first step in the research of these materials under irradiation, we study the formation energies and stability of point defects in thorium nitride by means of first-principles calculations within the framework of density functional theory. We focus on vacancies, interstitials, Frenkel pairs and Schottky defects. We found that N and Th vacancies have almost the same formation energy and that the most energetically favorable defects of all studied in this work are N interstitials. These kind of results for ThN, to the best authors' knowledge, have not been obtained previously, neither experimentally, nor theoretically.

  3. Point defects in thorium nitride: A first-principles study

    International Nuclear Information System (INIS)

    Pérez Daroca, D.; Llois, A.M.; Mosca, H.O.

    2016-01-01

    Thorium and its compounds (carbides and nitrides) are being investigated as possible materials to be used as nuclear fuels for Generation-IV reactors. As a first step in the research of these materials under irradiation, we study the formation energies and stability of point defects in thorium nitride by means of first-principles calculations within the framework of density functional theory. We focus on vacancies, interstitials, Frenkel pairs and Schottky defects. We found that N and Th vacancies have almost the same formation energy and that the most energetically favorable defects of all studied in this work are N interstitials. These kind of results for ThN, to the best authors' knowledge, have not been obtained previously, neither experimentally, nor theoretically.

  4. A p-nitroaniline redox-active solid-state electrolyte for battery-like electrochemical capacitive energy storage combined with an asymmetric supercapacitor based on metal oxide functionalized β-polytype porous silicon carbide electrodes.

    Science.gov (United States)

    Kim, Myeongjin; Yoo, Jeeyoung; Kim, Jooheon

    2017-05-23

    A unique redox active flexible solid-state asymmetric supercapacitor with ultra-high capacitance and energy density was fabricated using a composite comprising MgCo 2 O 4 nanoneedles and micro and mesoporous silicon carbide flakes (SiCF) (SiCF/MgCo 2 O 4 ) as the positive electrode material. Due to the synergistic effect of the two materials, this hybrid electrode has a high specific capacitance of 516.7 F g -1 at a scan rate of 5 mV s -1 in a 1 M KOH aqueous electrolyte. To obtain a reasonable matching of positive and negative electrode pairs, a composite of Fe 3 O 4 nanoparticles and SiCF (SiCF/Fe 3 O 4 ) was synthesized for use as a negative electrode material, which shows a high capacitance of 423.2 F g -1 at a scan rate of 5 mV s -1 . Therefore, by pairing the SiCF/MgCo 2 O 4 positive electrode and the SiCF/Fe 3 O 4 negative electrode with a redox active quasi-solid-state PVA-KOH-p-nitroaniline (PVA-KOH-PNA) gel electrolyte, a novel solid-state asymmetric supercapacitor device was assembled. Because of the synergistic effect between the highly porous SiCF and the vigorous redox-reaction of metal oxides, the hybrid nanostructure electrodes exhibited outstanding charge storage and transport. In addition, the redox active PVA-KOH-PNA electrolyte adds additional pseudocapacitance, which arises from the nitro-reduction and oxidation and reduction process of the reduction product of p-phenylenediamine, resulting in an enhancement of the capacitance (a specific capacitance of 161.77 F g -1 at a scan rate of 5 mV s -1 ) and energy density (maximum energy density of 72.79 Wh kg -1 at a power density of 727.96 W kg -1 ).

  5. Environmental Effects on Non-oxide Ceramics

    Science.gov (United States)

    Jacobson, Nathan S.; Opila, Elizabeth J.

    1997-01-01

    Non-oxide ceramics such as silicon carbide (SiC) and silicon nitride (Si3N4) are promising materials for a wide range of high temperature applications. These include such diverse applications as components for heat engines, high temperature electronics, and re-entry shields for space vehicles. Table I lists a number of selected applications. Most of the emphasis here will be on SiC and Si3N4. Where appropriate, other non-oxide materials such as aluminum nitride (AlN) and boron nitride (BN) will be discussed. Proposed materials include both monolithic ceramics and composites. Composites are treated in more detail elsewhere in this volume, however, many of the oxidation/corrosion reactions discussed here can be extended to composites. In application these materials will be exposed to a wide variety of environments. Table I also lists reactive components of these environments.It is well-known that SiC and Si3N4 retain their strength to high temperatures. Thus these materials have been proposed for a variety of hot-gas-path components in combustion applications. These include heat exchanger tubes, combustor liners, and porous filters for coal combustion products. All combustion gases contain CO2, CO, H2, H2O, O2, and N2. The exact gas composition is dependent on the fuel to air ratio or equivalence ratio. (Equivalence ratio (EQ) is a fuel-to-air ratio, with total hydrocarbon content normalized to the amount of O2 and defined by EQ=1 for complete combustion to CO2 and H2O). Figure 1 is a plot of equilibrium gas composition vs. equivalence ratio. Note that as a general rule, all combustion atmospheres are about 10% water vapor and 10% CO2. The amounts of CO, H2, and O2 are highly dependent on equivalence ratio.

  6. The effect of water on the stability of iron oxide and iron carbide nanoparticles in hydrogen and syngas followed by in situ X-ray absorption spectroscopy

    NARCIS (Netherlands)

    Thuene, P.C.; Moodley - Gengan, P.; Scheijen, F.J.E.; Fredriksson, H.O.A.; Lancee, R.J.; Kropf, J.; Miller, J.T.; Niemantsverdriet, J.W.

    2012-01-01

    The effect of water on iron-based nanoparticles under hydrogen and syngas was investigated by in situ X-ray absorption spectroscopy. The iron oxide (¿-Fe2O3) nanoparticles, dispersed as a monolayer on flat silica surfaces, were readily converted into metallic iron in dry hydrogen at 350 °C and into

  7. ENTIRELY AQUEOUS SOLUTION-GEL ROUTE FOR THE PREPARATION OF ZIRCONIUM CARBIDE, HAFNIUM CARBIDE AND THEIR TERNARY CARBIDE POWDERS

    Directory of Open Access Journals (Sweden)

    Zhang Changrui

    2016-07-01

    Full Text Available An entirely aqueous solution-gel route has been developed for the synthesis of zirconium carbide, hafnium carbide and their ternary carbide powders. Zirconium oxychloride (ZrOCl₂.8H₂O, malic acid (MA and ethylene glycol (EG were dissolved in water to form the aqueous zirconium carbide precursor. Afterwards, this aqueous precursor was gelled and transformed into zirconium carbide at a relatively low temperature (1200 °C for achieving an intimate mixing of the intermediate products. Hafnium and the ternary carbide powders were also synthesized via the same aqueous route. All the zirconium, hafnium and ternary carbide powders exhibited a particle size of ∼100 nm.

  8. Nanopillar arrays of amorphous carbon nitride

    Science.gov (United States)

    Sai Krishna, Katla; Pavan Kumar, B. V. V. S.; Eswaramoorthy, Muthusamy

    2011-07-01

    Nanopillar arrays of amorphous carbon nitride have been prepared using anodic aluminum oxide (AAO) membrane as a template. The amine groups present on the surface of these nanopillars were exploited for functionalization with oleic acid in order to stabilize the nanostructure at the aqueous-organic interface and also for the immobilization of metal nanoparticles and protein. These immobilised nanoparticles were found to have good catalytic activity.

  9. Metal Nitrides for Plasmonic Applications

    DEFF Research Database (Denmark)

    Naik, Gururaj V.; Schroeder, Jeremy; Guler, Urcan

    2012-01-01

    Metal nitrides as alternatives to metals such as gold could offer many advantages when used as plasmonic material. We show that transition metal nitrides can replace metals providing equally good optical performance for many plasmonic applications.......Metal nitrides as alternatives to metals such as gold could offer many advantages when used as plasmonic material. We show that transition metal nitrides can replace metals providing equally good optical performance for many plasmonic applications....

  10. Properties of minor actinide nitrides

    International Nuclear Information System (INIS)

    Takano, Masahide; Itoh, Akinori; Akabori, Mitsuo; Arai, Yasuo; Minato, Kazuo

    2004-01-01

    The present status of the research on properties of minor actinide nitrides for the development of an advanced nuclear fuel cycle based on nitride fuel and pyrochemical reprocessing is described. Some thermal stabilities of Am-based nitrides such as AmN and (Am, Zr)N were mainly investigated. Stabilization effect of ZrN was cleary confirmed for the vaporization and hydrolytic behaviors. New experimental equipments for measuring thermal properties of minor actinide nitrides were also introduced. (author)

  11. Characteristics of Au/PZT/TiO2/Nitride/Si structure capacitors with ICP nitride treatments

    International Nuclear Information System (INIS)

    Min, Hyung Seob; Kim, Tae Ho; Jeon, Chang Bae; Lee, Jae Gab; Kim, Ji Young

    2002-01-01

    In this study, the characteristics of PZT/TiO 2 ferroelectric gate stack capacitors with Inductively Coupled Plasma (ICP) nitridation were investigated for field effect transistor (FET)-type Ferroelectric Random Access Memory (FeRAM) applications. If a high accumulation capacitance is to be had, the ICP nitridation time needs to be optimized. While a short ICP treatment time results in thermal oxide growth due to lack of nitrogen, a long nitridation time causes a nitride layer which is too thick. Au/PZT(200 nm)/TiO 2 (40 nm)/Nitride/Si (MeFINS) structure capacitors show a memory window (ΔV) of 1.6 V under ±3-V operation while Au/PZT(200 nm)/TiO 2 (40 nm)/Si (MeFIS) capacitors without nitride treatment exhibit a small memory window of 0.6 V. At the same time, the capacitance of the MeFINS device is almost twice that of the MeFIS capacitor. This result implies that the ICP nitride treatment suppresses the formation of a low dielectric constant interfacial SiO x layer and alleviates the series capacitance problem

  12. Mechanism of the electrochemical hydrogen reaction on smooth tungsten carbide and tungsten electrodes

    International Nuclear Information System (INIS)

    Wiesener, K.; Winkler, E.; Schneider, W.

    1985-01-01

    The course of the electrochemical hydrogen reaction on smooth tungsten-carbide electrodes in hydrogen saturated 2.25 M H 2 SO 4 follows a electrochemical sorption-desorption mechanism in the potential range of -0.4 to +0.1 V. At potentials greater than +0.1 V the hydrogen oxidation is controlled by a preliminary chemical sorption step. Concluding from the similar behaviour of tungsten-carbide and tungsten electrodes after cathodic pretreatment, different tungsten oxides should be involved in the course of the hydrogen reaction on tungsten carbide electrodes. (author)

  13. Application of metal oxide refractories for melting and casting reactive metals

    International Nuclear Information System (INIS)

    Jessen, N.C. Jr.; Holcombe, C.E. Jr.; Townsend, A.B.

    1979-01-01

    Extensive investigations have been conducted to develop metal oxide refractories for containment of molten uranium and uranium alloys. Since uranium and uranium alloys are readily susceptable to the formation of complex oxides, carbides, nitrides, intermetallic compounds, and suboxide reactions, severe problems exist for the production of quality castings. These contamination reactions are dependent on temperature, pressure, and molten metal interfacial reactions. The need for high purity metals to meet specification repeatedly has resulted in the development of improved metal oxide refractories and sophisticated furnace controls. Applications of Y 2 O 3 for use as a crucible and mold coating, precision molds and cores, and high temperature castable ceramics are discussed. Experimental results on melt impurity levels, thermal controls during melting, surface interactions and casting quality are presented

  14. Enhanced optical performance of electrochemically etched porous silicon carbide

    International Nuclear Information System (INIS)

    Naderi, N; Hashim, M R; Saron, K M A; Rouhi, J

    2013-01-01

    Porous silicon carbide (PSC) was successfully synthesized via electrochemical etching of an n-type hexagonal silicon carbide (6H-SiC) substrate using various current densities. The cyclic voltammograms of SiC dissolution show that illumination is required for the accumulation of carriers at the surface, followed by surface oxidation and dissolution of the solid. The morphological and optical characterizations of PSC were reported. Scanning electron microscopy results demonstrated that the current density can be considered an important etching parameter that controls the porosity and uniformity of PSC; hence, it can be used to optimize the optical properties of the porous samples. (paper)

  15. Thermo-Optic Characterization of Silicon Nitride Resonators for Cryogenic Photonic Circuits

    NARCIS (Netherlands)

    Elshaari, A.W.A.; Esmaeil Zadeh, I.; Jöns, K.D.; Zwiller, Val

    2016-01-01

    In this paper, we characterize the Thermo-optic properties of silicon nitride ring resonators between 18 and 300 K. The Thermo-optic coefficients of the silicon nitride core and the oxide cladding are measured by studying the temperature dependence of the resonance wavelengths. The resonant modes

  16. Preparation of uranium-plutonium mixed nitride pellets with high purity

    International Nuclear Information System (INIS)

    Arai, Yasuo; Shiozawa, Ken-ichi; Ohmichi, Toshihiko

    1992-01-01

    Uranium-plutonium mixed nitride pellets have been prepared in the gloveboxes with high purity Ar gas atmosphere. Carbothermic reduction of the oxides in N 2 -H 2 mixed gas stream was adopted for synthesizing mixed nitride. Sintering was carried out in various conditions and the effect on the pellet characteristics was investigated. (author)

  17. Waveguide silicon nitride grating coupler

    Science.gov (United States)

    Litvik, Jan; Dolnak, Ivan; Dado, Milan

    2016-12-01

    Grating couplers are one of the most used elements for coupling of light between optical fibers and photonic integrated components. Silicon-on-insulator platform provides strong confinement of light and allows high integration. In this work, using simulations we have designed a broadband silicon nitride surface grating coupler. The Fourier-eigenmode expansion and finite difference time domain methods are utilized in design optimization of grating coupler structure. The fully, single etch step grating coupler is based on a standard silicon-on-insulator wafer with 0.55 μm waveguide Si3N4 layer. The optimized structure at 1550 nm wavelength yields a peak coupling efficiency -2.6635 dB (54.16%) with a 1-dB bandwidth up to 80 nm. It is promising way for low-cost fabrication using complementary metal-oxide- semiconductor fabrication process.

  18. Microstructural Study of Titanium Carbide Coating on Cemented Carbide

    DEFF Research Database (Denmark)

    Vuorinen, S.; Horsewell, Andy

    1982-01-01

    Titanium carbide coating layers on cemented carbide substrates have been investigated by transmission electron microscopy. Microstructural variations within the typically 5µm thick chemical vapour deposited TiC coatings were found to vary with deposit thickness such that a layer structure could...... be delineated. Close to the interface further microstructural inhomogeneities were obsered, there being a clear dependence of TiC deposition mechanism on the chemical and crystallographic nature of the upper layers of the multiphase substrate....

  19. Thermodynamic analysis of thermal plasma process of composite zirconium carbide and silicon carbide production from zircon concentrates

    International Nuclear Information System (INIS)

    Kostic, Z.G.; Stefanovic, P.Lj.; Pavlovic; Pavlovic, Z.N.; Zivkovic, N.V.

    2000-01-01

    Improved zirconium ceramics and composites have been invented in an effort to obtain better resistance to ablation at high temperature. These ceramics are suitable for use as thermal protection materials on the exterior surfaces of spacecraft, and in laboratory and industrial environments that include flows of hot oxidizing gases. Results of thermodynamic consideration of the process for composite zirconium carbide and silicon carbide ultrafine powder production from ZrSiO 4 in argon thermal plasma and propane-butane gas as reactive quenching reagents are presented in the paper. (author)

  20. Synthesis of carbides of refractory metals in salt melts

    International Nuclear Information System (INIS)

    Ilyushchenko, N.G.; Anfinogenov, A.I.; Chebykin, V.V.; Chernov, Ya.B.; Shurov, N.I.; Ryaposov, Yu.A.; Dobrynin, A.I.; Gorshkov, A.V.; Chub, A.V.

    2003-01-01

    The ion-electron melts, obtained through dissolving the alkali and alkali-earth metals in the molten chlorides above the chloride melting temperature, were used for manufacturing the high-melting metal carbides as the transport melt. The lithium, calcium and magnesium chlorides and the mixture of the lithium chloride with the potassium or calcium chloride were used from the alkali or alkali-earth metals. The metallic lithium, calcium, magnesium or the calcium-magnesium mixtures were used as the alkali or alkali-earth metals. The carbon black or sugar was used as carbon. It is shown, that lithium, magnesium or calcium in the molten salts transfer the carbon on the niobium, tantalum, titanium, forming the carbides of the above metals. The high-melting metal carbides are obtained both from the metal pure powders and from the oxides and chlorides [ru

  1. Tungsten--carbide critical assembly

    International Nuclear Information System (INIS)

    Hansen, G.E.; Paxton, H.C.

    1975-06-01

    The tungsten--carbide critical assembly mainly consists of three close-fitting spherical shells: a highly enriched uranium shell on the inside, a tungsten--carbide shell surrounding it, and a steel shell on the outside. Ideal critical specifications indicate a rather low computed value of k/sub eff/. Observed and calculated fission-rate distributions for 235 U, 238 U, and 237 Np are compared, and calculated leakage neutrons per fission in various energy groups are given. (U.S.)

  2. Colloidal Plasmonic Titanium Nitride Nanoparticles: Properties and Applications

    Directory of Open Access Journals (Sweden)

    Guler Urcan

    2015-01-01

    Full Text Available Optical properties of colloidal plasmonic titanium nitride nanoparticles are examined with an eye on their photothermal and photocatalytic applications via transmission electron microscopy and optical transmittance measurements. Single crystal titanium nitride cubic nanoparticles with an average size of 50 nm, which was found to be the optimum size for cellular uptake with gold nanoparticles [1], exhibit plasmon resonance in the biological transparency window and demonstrate a high absorption efficiency. A self-passivating native oxide at the surface of the nanoparticles provides an additional degree of freedom for surface functionalization. The titanium oxide shell surrounding the plasmonic core can create new opportunities for photocatalytic applications.

  3. Strengthening of oxidation resistant materials for gas turbine applications. [treatment of silicon ceramics for increased flexural strength and impact resistance

    Science.gov (United States)

    Kirchner, H. P.

    1974-01-01

    Silicon nitride and silicon carbide ceramics were treated to form compressive surface layers. On the silicon carbide, quenching and thermal exposure treatments were used, and on the silicon nitride, quenching, carburizing, and a combination of quenching and carburizing were used. In some cases substantial improvements in impact resistance and/or flexural strength were observed. The presence of compressive surface stresses was demonstrated by slotted rod tests.

  4. Joining of cemented carbides to steel by laser beam welding

    Energy Technology Data Exchange (ETDEWEB)

    Barbatti, C.; Garcia, J.; Pyzalla, A. [Max-Planck-Institut fuer Eisenforschung GmbH, 40237 Duesseldorf (Germany); Liedl, G. [TU Wien, Institut fuer Umform- und Hochleistungslasertechnik (IFLT), 1040 Vienna (Austria)

    2007-11-15

    Welding of dissimilar materials such as steel and cemented carbides (hardmetals, cermets) is particularly challenging e.g. because mismatches in their thermal expansion coefficients and thermal conductivities result in residual stress formation and because of the formation of brittle intermetallic phases. Laser beam welding of cemented carbides to steel appears as an attractive complementary technique to conventional brazing processes due to its high precision, high process speed, low heat input and the option of welding without filler. Here a laser welding process including pre-heat treatment and post-heat treatment was applied successfully to joining as-sintered and nitrided hardmetals and cermets to low alloyed steel. The microstructure and mechanical properties of the welds are investigated by microscopy, X-ray diffraction, microhardness measurements, and bending tests. The results reveal that the three-step laser beam welding process produced crack-free and non-porous joints. Nitridation of the cemented carbides results in a significant reduction of the amount of brittle intermetallic phases. The mechanical properties of the joints are competitive to those of the conventional brazed steel-cemented carbide joints. (Abstract Copyright [2007], Wiley Periodicals, Inc.) [German] Das Schweissen von ungleichartigen Werkstoffen wie z. B. Staehlen mit Hartmetallen und Cermets stellt eine erhebliche Herausforderung dar, u. a. infolge der unterschiedlichen thermischen Ausdehnungskoeffizienten und Waermeleitfaehigkeiten, welche die Bildung von Eigenspannungen zur Folge haben, sowie aufgrund der Bildung sproeder intermetallischer Phasen. Das Laserstrahlschweissen von Hartmetallen/Cermets mit Stahl erscheint als attraktives komplementaeres Verfahren zum ueblicherweise verwendeten Loeten, da es die Herstellung von Verbindungen mit hoeherer Praezision, hoeherer Geschwindigkeit sowie geringerem Waermeeintrag erlaubt und die Verwendung eines Zusatzwerkstoffs nicht notwendig ist

  5. Ion-nitriding of austenitic stainless steels

    International Nuclear Information System (INIS)

    Pacheco, O.; Hertz, D.; Lebrun, J.P.; Michel, H.

    1995-01-01

    Although ion-nitriding is an extensively industrialized process enabling steel surfaces to be hardened by nitrogen diffusion, with a resulting increase in wear, seizure and fatigue resistance, its direct application to stainless steels, while enhancing their mechanical properties, also causes a marked degradation in their oxidation resistance. However, by adaption of the nitriding process, it is possible to maintain the improved wear resistant properties while retaining the oxidation resistance of the stainless steel. The controlled diffusion permits the growth of a nitrogen supersaturated austenite layer on parts made of stainless steel (AISI 304L and 316L) without chromium nitride precipitation. The diffusion layer remains stable during post heat treatments up to 650 F for 5,000 hrs and maintains a hardness of 900 HV. A very low and stable friction coefficient is achieved which provides good wear resistance against stainless steels under diverse conditions. Electrochemical and chemical tests in various media confirm the preservation of the stainless steel characteristics. An example of the application of this process is the treatment of Reactor Control Rod Cluster Assemblies (RCCAs) for Pressurized Water Nuclear Reactors

  6. Silicon nitride nanosieve membrane

    NARCIS (Netherlands)

    Tong, D.H.; Jansen, Henricus V.; Gadgil, V.J.; Bostan, C.G.; Berenschot, Johan W.; van Rijn, C.J.M.; Elwenspoek, Michael Curt

    2004-01-01

    An array of very uniform cylindrical nanopores with a pore diameter as small as 25 nm has been fabricated in an ultrathin micromachined silicon nitride membrane using focused ion beam (FIB) etching. The pore size of this nanosieve membrane was further reduced to below 10 nm by coating it with

  7. Gallium nitride-based micro-opto-electro-mechanical systems

    Science.gov (United States)

    Stonas, Andreas Robert

    Gallium Nitride and its associated alloys InGaN and AlGaN have many material properties that are highly desirable for micro-electro-mechanical systems (MEMS), and more specifically micro-opto-electro-mechanical systems (MOEMS). The group III-nitrides are tough, stiff, optically transparent, direct bandgap, chemically inert, highly piezoelectric, and capable of functioning at high temperatures. There is currently no other semiconductor system that possesses all of these properties. Taken together, these attributes make the nitrides prime candidates not only for creating new versions of existing device structures, but also for creating entirely unique devices which combine these properties in novel ways. Unfortunately, their chemical resiliency also makes the group III-nitrides extraordinarily difficult to shape into devices. In particular, until this research, no undercut etch technology existed that could controllably separate a selected part of a MEMS device from its sapphire or silicon carbide substrate. This has effectively prevented GaN-based MEMS from being developed. This dissertation describes how this fabrication obstacle was overcome by a novel etching geometry (bandgap-selective backside-illuminated photoelectochemical (BS-BIPEC) etching) and its resulting morphologies. Several gallium-nitride based MEMS devices were created, actuated, and modelled, including cantilevers and membranes. We describe in particular our pursuit of one of the many novel device elements that is possible only in this material system: a transducer that uses an externally applied strain to dynamically change the optical transition energy of a quantum well. While the device objective of a dynamically tunable quantum well was not achieved, we have demonstrated sufficient progress to believe that such a device will be possible soon. We have observed a shift (5.5meV) of quantum well transition energies in released structures, and we have created structures that can apply large biaxial

  8. Study of the main parameters involved in carbothermal reduction reaction of silica aiming to obtain silicon nitride powder

    International Nuclear Information System (INIS)

    Rocha, J.C. da; Greca, M.C.

    1989-01-01

    The influence of main parameters involved in the method of silicon nitride attainment by carbothermal reduction of silica followed by nitridation were studied in isothermal experiments of fine powder mixtures of silica and graphite in a nitrogen gas flow. The time, temperature, rate C/SiO 2 and flow of nitrogen were varied since they are the main parameters involved in this kind of reaction. The products of reaction were analysed by X-ray diffraction to identify the crystalline phases and as a result was obtained the nucleation of silicon nitride phase. Meanwhile, corroborating prior results, we verified to be difficult the progress of the reaction and the inhibition of formation of silicon carbide phase, the last one being associated to the formation of silicon nitride phase due to thermodynamic matters [pt

  9. Variation of crystallinity and stoichiometry in films of gallium oxide, gallium nitride and barium zirconate prepared by means of PLD; Variation von Kristallinitaet und Stoechiometrie in mittels PLD hergestellten Schichten aus Galliumoxid, Galliumnitrid und Bariumzirkonat

    Energy Technology Data Exchange (ETDEWEB)

    Brendt, Jochen

    2011-08-05

    Pulsed Laser Deposition (PLD) is an ablation technique for thin film preparation of many materials. The film properties can be well controlled by the process parameters. Therefore, in many cases a given material can be deposited with different properties by changing one or more process parameters. In this thesis thin films of gallium oxide, gallium nitride and barium zirconate were deposited with a large variation in structure and stoichiometry by means of Pulsed Laser Deposition. The characterization of the film crystallinity, phase purity and short range structural order was completed by means of X-ray diffraction and X-ray absorption spectroscopy. The stoichiometry was investigated using electron probe microanalysis. For analyzing the correlation between the structure and stoichiometry with the optical and electrical properties, optical absorption and electrical conductivity measurements were carried out. The investigation of all three material systems showed that very unique properties can be realized when combining an amorphous structure and a non-stoichiometric composition. For example, in amorphous and oxygen deficient gallium oxide an insulator-metal-transition can be induced by partial crystallization of the as prepared phase accomplished by annealing at about 400 C in argon atmosphere (as shown in literature). Furthermore, amorphous and highly non-stoichiometric barium zirconate has the ability to split water molecules to hydrogen and oxygen at room temperature. A detailed analysis of both phenomena has been performed by means of photoemission and transmission electron microscopy in the case of gallium oxide and via X-ray absorption spectroscopy and gas chromatography in the case of barium zirconate.

  10. PREPARATION OF TANTALUM CARBIDE FROM AN ORGANOMETALLIC PRECURSOR

    Directory of Open Access Journals (Sweden)

    C. P. SOUZA

    1999-03-01

    Full Text Available In this work we have synthesized an organometallic oxalic precursor from tantalum oxide. This oxide was solubilized by heating with potassium hydrogen sulfate. In order to precipitate Ta2O5.nH2O, the fused mass obtained was dissolved in a sulfuric acid solution and neutralized with ammonia. The hydrated tantalum oxide precipitated was dissolved in an equimolar solution of oxalic acid/ammonium oxalate. The synthesis and the characterization of the tantalum oxalic precursor are described. Pyrolysis of the complex in a mixture of hydrogen and methane at atmospheric pressure was studied. The gas-solid reaction made it possible to obtain tantalum carbide, TaC, in the powder form at 1000oC. The natural sintering of TaC powder in an inert atmosphere at 1400°C during 10 hours, under inert atmosphere made it possible to densify the carbide to 96% of the theoretical value.

  11. Non-covalent doping of graphitic carbon nitride with ultrathin graphene oxide and molybdenum disulfide nanosheets: an effective binary heterojunction photocatalyst under visible light irradiation.

    Science.gov (United States)

    Hu, S W; Yang, L W; Tian, Y; Wei, X L; Ding, J W; Zhong, J X; Chu, Paul K

    2014-10-01

    A proof of concept integrating binary p-n heterojunctions into a semiconductor hybrid photocatalyst is demonstrated by non-covalent doping of graphite-like carbon nitride (g-C3N4) with ultrathin GO and MoS2 nanosheets using a facile sonochemical method. In this unique ternary hybrid, the layered MoS2 and GO nanosheets with a large surface area enhance light absorption to generate more photoelectrons. On account of the coupling between MoS2 and GO with g-C3N4, the ternary hybrid possesses binary p-n heterojunctions at the g-C3N4/MoS2 and g-C3N4/GO interfaces. The space charge layers created by the p-n heterojunctions not only enhance photogeneration, but also promote charge separation and transfer of electron-hole pairs. In addition, the ultrathin MoS2 and GO with high mobility act as electron mediators to facilitate separation of photogenerated electron-hole pairs at each p-n heterojunction. As a result, the ternary hybrid photocatalyst exhibits improved photoelectrochemical and photocatalytic activity under visible light irradiation compared to other reference materials. The results provide new insights into the large-scale production of semiconductor photocatalysts. Copyright © 2014 Elsevier Inc. All rights reserved.

  12. Construction of fiber-shaped silver oxide/tantalum nitride p-n heterojunctions as highly efficient visible-light-driven photocatalysts.

    Science.gov (United States)

    Li, Shijie; Hu, Shiwei; Xu, Kaibing; Jiang, Wei; Liu, Yu; Leng, Zhe; Liu, Jianshe

    2017-10-15

    Constructing novel and efficient p-n heterojunction photocatalysts has stimulated great interest. Herein, we report the design and synthesis of fiber-shaped Ag 2 O/Ta 3 N 5 p-n heterojunctions as a kind of efficient photocatalysts. Ta 3 N 5 nanofibers were prepared by an electrospinning-calcination-nitridation method, and then the in-situ anchoring of Ag 2 O on their surfaces was realized by a facile deposition method. The resulting Ag 2 O/Ta 3 N 5 heterojunctions were comprised of porous Ta 3 N 5 nanofibers (diameter: ∼150nm) and Ag 2 O nanoparticles (size: ∼12nm). The photocatalytic activity of these heterojunctions were studied by decomposing rhodamine B (RhB) dye and tetracycline (TC) antibiotic under visible light (λ>400nm). In all the samples, the heterojunction with Ag 2 O/Ta 3 N 5 molar ratio of 0.2/1 displays the best activity. It is found that a synergistic effect contributes to the effective suppression of charges recombination between Ta 3 N 5 and Ag 2 O, leading to an enhanced photocatalytic activity with good stability. The photogenerated holes (h + ) and superoxide radicals (O 2 - ) play dominant roles in the photocatalytic process. These p-n heterojunctions will have great potential for environmental remediation because of the facile preparation process and exceptional photocatalytic activity. Copyright © 2017 Elsevier Inc. All rights reserved.

  13. Iron-based alloy and nitridation treatment for PEM fuel cell bipolar plates

    Science.gov (United States)

    Brady, Michael P [Oak Ridge, TN; Yang, Bing [Oak Ridge, TN; Maziasz, Philip J [Oak Ridge, TN

    2010-11-09

    A corrosion resistant electrically conductive component that can be used as a bipolar plate in a PEM fuel cell application is composed of an alloy substrate which has 10-30 wt. % Cr, 0.5 to 7 wt. % V, and base metal being Fe, and a continuous surface layer of chromium nitride and vanadium nitride essentially free of base metal. A oxide layer of chromium vanadium oxide can be disposed between the alloy substrate and the continuous surface nitride layer. A method to prepare the corrosion resistant electrically conductive component involves a two-step nitridization sequence by exposing the alloy to a oxygen containing gas at an elevated temperature, and subsequently exposing the alloy to an oxygen free nitrogen containing gas at an elevated temperature to yield a component where a continuous chromium nitride layer free of iron has formed at the surface.

  14. Effect of carbides on the creep properties of a Ni-base superalloy M963

    International Nuclear Information System (INIS)

    He, L.Z.; Zheng, Q.; Sun, X.F.; Guan, H.R.; Hu, Z.Q.; Tieu, A.K.; Lu, C.; Zhu, H.T.

    2005-01-01

    Effect of carbides on the creep properties of a cast Ni-base superalloy M963 tested at 800 and 900 deg. C over a broad stress range has been investigated. Correlation between the carbides and creep properties of the alloy is enabled through scanning electron microscopy (SEM) and transmission electron microscopy (TEM). During high temperature creep tests, the primary MC carbide decomposes sluggishly and a large amount of secondary carbides precipitate. The cubic and acicular M 6 C carbide precipitates at the dendritic core region. Extremely fine chromium-rich M 23 C 6 carbide precipitates preferentially at grain boundaries. The M 6 C and M 23 C 6 carbides are found to be beneficial to the creep properties of the alloy. At lower temperature (800 deg. C), the interface of MC carbide with matrix is one of the principal sites for crack initiation. At higher temperature (900 deg. C), the oxidation and the precipitation of μ phase are the main factors for significant loss in creep strength of the alloy

  15. Present status of uranium-plutonium mixed carbide fuel development for LMFBRs

    International Nuclear Information System (INIS)

    Handa, Muneo; Suzuki, Yasufumi

    1984-01-01

    The feature of carbide fuel is that it has the doubling time as short as about 13 years, that is, close to one half as compared with oxide fuel. The development of the carbide fuel in the past 10 years has been started in amazement. Especially in the program of new fuel development in USA started in 1974, He and Na bond fuel attained the burnup of 16 a/o without causing the breaking of cladding tubes. In 1984, the irradiation of the assembly composed of 91 fuel pins in the FFTF is expected. On the other hand in Japan, the fuel research laboratory was constructed in 1974 in the Oarai Laboratory, Japan Atomic Energy Research Institute, to carry out the studies on carbide fuel. In the autumn of 1982, two carbide fuel pins with different chemical composition have been successfully made. Accordingly, the recent status of the development is explained. The uranium-plutonium mixed carbide fuel is suitable to liquid metal-cooled fast breeder reactors because of large heat conductivity and the high density of nuclear fission substances. The thermal and nuclear characteristics of carbide fuel, the features of the reactor core using carbide fuel, the chemical and mechanical interaction of fuel and cladding tubes, the selection of bond materials, the manufacturing techniques for the fuel, the development of the analysis code for fuel behavior, and the research and development of carbide fuel in Japan are described. (Kako, I.)

  16. Synthesis of nitrided MoO{sub 2} and its application as anode materials for lithium-ion batteries

    Energy Technology Data Exchange (ETDEWEB)

    Yoon, Sukeun, E-mail: skyoon@kier.re.kr [New and Renewable Energy Research Division, Korea Institute of Energy Research, Daejeon 305-343 (Korea, Republic of); Jung, Kyu-Nam; Jin, Chang Soo; Shin, Kyung-Hee [New and Renewable Energy Research Division, Korea Institute of Energy Research, Daejeon 305-343 (Korea, Republic of)

    2012-09-25

    Highlights: Black-Right-Pointing-Pointer Synthesis of nitrided molybdenum oxide by nitridation. Black-Right-Pointing-Pointer Superior cyclability for nitrided molybdenum oxide anodes. Black-Right-Pointing-Pointer Electrochemical reaction behavior of nitrided molybdenum oxide with lithium. - Abstract: Nitrided MoO{sub 2} has been synthesized by hydrothermal processing followed by post-nitridation with NH{sub 3} and investigated as alternative anode materials for rechargeable lithium batteries. Characterization data reveal the presence of molybdenum nitride ({gamma}-Mo{sub 2}N and {delta}-MoN) and molybdenum oxynitride (MoO{sub x}N{sub y}). The nitrided MoO{sub 2} exhibits a capacity of >420 mAh/g after 100 cycles and good rate capability. The improved electrochemical performance of the nitrided MoO{sub 2} compared to that of molybdenum oxide (MoO{sub 2}) is attributed to high electrical conductivity provided by nitrogen doping/or substitution in the oxygen octahedral site of MoO{sub 2} structure.

  17. TIDES-ACS Trial: comparison of titanium-nitride-oxide coated bio-active-stent to the drug (everolimus)-eluting stent in acute coronary syndrome. Study design and objectives.

    Science.gov (United States)

    Colkesen, E B; Eefting, F D; Rensing, B J; Suttorp, M J; Ten Berg, J M; Karjalainen, P P; Van Der Heyden, J A

    2015-02-01

    Drug-eluting stents (DES), delivering antiproliferative drugs from a durable polymer, have shown to reduce in-stent restenosis after percutaneous coronary intervention (PCI) compared to bare-metal stents (BMS). However, they have been associated with a hypersensitivity reaction, delayed healing, and incomplete endothelialization, which may contribute to an increased risk of late stent thrombosis. Consequently, a prolonged duration of dual antiplatelet therapy (DAPT) is needed, with an increased risk of bleeding complication. A number of stent technologies are being developed in an attempt to modify late thrombotic events and DAPT duration. The Optimax™ stent is such a novel, next generation bioactive stent (BAS), in which a thicker layer of titanium-nitride-oxide coating is inserted over the stent struts. The rationale of this is to obtain more efficient and rapid vascular healing at the site of the stent implantation. The aim of TIDES-ACS Trial is to compare clinical outcome in patients presenting with ACS, treated with PCI using Optimax-BAS versus Synergy™-EES. Second objective is to explore whether the Optimax™-BAS use is superior compared with Synergy™-EES use with respect of hard end points (cardiac death, myocardial infarction [MI] and major bleeding). A prospective, randomized, multicenter trial (ClinicalTrials.gov Identifier: NCT02049229), will be conducted in interventional centres in Finland (six centres), France (five centres) and Holland (two centres), including a total of 1800 patients.

  18. Influences of residual oxygen impurities, cubic indium oxide grains and indium oxy-nitride alloy grains in hexagonal InN crystalline films grown on Si(111) substrates by electron cyclotron resonance plasma-assisted molecular beam epitaxy

    International Nuclear Information System (INIS)

    Yodo, T.; Nakamura, T.; Kouyama, T.; Harada, Y.

    2005-01-01

    We investigated the influences of residual oxygen (O) impurities, cubic indium oxide (β-In 2 O 3 ) grains and indium oxy-nitride (InON) alloy grains in 200 nm-thick hexagonal (α)-InN crystalline films grown on Si(111) substrates by electron cyclotron resonance plasma-assisted molecular beam epitaxy. Although β-In 2 O 3 grains with wide band-gap energy were formed in In film by N 2 annealing, they were not easily formed in N 2 -annealed InN films. Even if they were not detected in N 2 -annealed InN films, the as-grown films still contained residual O impurities with concentrations of less than 0.5% ([O]≤0.5%). Although [O]∝1% could be estimated by investigating In 2 O 3 grains formed in N 2 -annealed InN films, [O]≤0.5% could not be measured by it. However, we found that they can be qualitatively measured by investigating In 2 O 3 grains formed by H 2 annealing with higher reactivity with InN and O 2 , using X-ray diffraction and PL spectroscopy. In this paper, we discuss the formation mechanism of InON alloy grains in InN films. (copyright 2005 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  19. Device performance of in situ steam generated gate dielectric nitrided by remote plasma nitridation

    International Nuclear Information System (INIS)

    Al-Shareef, H. N.; Karamcheti, A.; Luo, T. Y.; Bersuker, G.; Brown, G. A.; Murto, R. W.; Jackson, M. D.; Huff, H. R.; Kraus, P.; Lopes, D.

    2001-01-01

    In situ steam generated (ISSG) oxides have recently attracted interest for use as gate dielectrics because of their demonstrated reliability improvement over oxides formed by dry oxidation. [G. Minor, G. Xing, H. S. Joo, E. Sanchez, Y. Yokota, C. Chen, D. Lopes, and A. Balakrishna, Electrochem. Soc. Symp. Proc. 99-10, 3 (1999); T. Y. Luo, H. N. Al-Shareef, G. A. Brown, M. Laughery, V. Watt, A. Karamcheti, M. D. Jackson, and H. R. Huff, Proc. SPIE 4181, 220 (2000).] We show in this letter that nitridation of ISSG oxide using a remote plasma decreases the gate leakage current of ISSG oxide by an order of magnitude without significantly degrading transistor performance. In particular, it is shown that the peak normalized transconductance of n-channel devices with an ISSG oxide gate dielectric decreases by only 4% and the normalized drive current by only 3% after remote plasma nitridation (RPN). In addition, it is shown that the reliability of the ISSG oxide exhibits only a small degradation after RPN. These observations suggest that the ISSG/RPN process holds promise for gate dielectric applications. [copyright] 2001 American Institute of Physics

  20. Oxidation and corrosion of silicon-based ceramics and composites

    International Nuclear Information System (INIS)

    Jacobson, N.S.; Fox, D.S.; Smialek, J.L.

    1997-01-01

    Silica scales exhibit slow growth rates and a low activation energy. Thus silica-protected materials are attractive high temperature structural materials for their potentially excellent oxidation resistance and well-documented high temperature strength. This review focuses on silicon carbide, silicon nitride, and composites of these materials. It is divided into four parts: (i) Fundamental oxidation mechanisms, (ii) Special properties of silica scales, (iii) Protective coatings, and (iv) Internal oxidation behavior of composites. While the fundamental oxidation mechanism of SiC is understood, there are still many questions regarding the oxidation mechanism of Si 3 N 4 . Silica scales exhibit many unique properties as compared to chromia and alumina. These include slower growth rates, SiO(g) formation, sensitivity to water vapor and impurities, and dissolution by basic molten salts. Protective coatings can limit the deleterious effects. The fourth area-internal oxidation of fibers and fiber coatings in composites-has limited the application of these novel materials. Strategies for understanding and limiting this internal oxidation are discussed. (orig.)

  1. Silicon-Carbide Power MOSFET Performance in High Efficiency Boost Power Processing Unit for Extreme Environments

    Science.gov (United States)

    Ikpe, Stanley A.; Lauenstein, Jean-Marie; Carr, Gregory A.; Hunter, Don; Ludwig, Lawrence L.; Wood, William; Del Castillo, Linda Y.; Fitzpatrick, Fred; Chen, Yuan

    2016-01-01

    Silicon-Carbide device technology has generated much interest in recent years. With superior thermal performance, power ratings and potential switching frequencies over its Silicon counterpart, Silicon-Carbide offers a greater possibility for high powered switching applications in extreme environment. In particular, Silicon-Carbide Metal-Oxide- Semiconductor Field-Effect Transistors' (MOSFETs) maturing process technology has produced a plethora of commercially available power dense, low on-state resistance devices capable of switching at high frequencies. A novel hard-switched power processing unit (PPU) is implemented utilizing Silicon-Carbide power devices. Accelerated life data is captured and assessed in conjunction with a damage accumulation model of gate oxide and drain-source junction lifetime to evaluate potential system performance at high temperature environments.

  2. Nitriding of high speed steel

    International Nuclear Information System (INIS)

    Doyle, E.D.; Pagon, A.M.; Hubbard, P.; Dowey, S.J.; Pilkington, A.; McCulloch, D.G.; Latham, K.; DuPlessis, J.

    2010-01-01

    Current practice when nitriding HSS cutting tools is to avoid embrittlement of the cutting edge by limiting the depth of the diffusion zone. This is accomplished by reducing the nitriding time and temperature and eliminating any compound layer formation. However, in many applications there is an argument for generating a compound layer with beneficial tribological properties. In this investigation results are presented of a metallographic, XRD and XPS analysis of nitrided surface layers generated using active screen plasma nitriding and reactive vapour deposition using cathodic arc. These results are discussed in the context of built up edge formation observed while machining inside a scanning electron microscope. (author)

  3. Defects in dilute nitrides

    International Nuclear Information System (INIS)

    Chen, W.M.; Buyanova, I.A.; Tu, C.W.; Yonezu, H.

    2005-01-01

    We provide a brief review our recent results from optically detected magnetic resonance studies of grown-in non-radiative defects in dilute nitrides, i.e. Ga(In)NAs and Ga(Al,In)NP. Defect complexes involving intrinsic defects such as As Ga antisites and Ga i self interstitials were positively identified.Effects of growth conditions, chemical compositions and post-growth treatments on formation of the defects are closely examined. These grown-in defects are shown to play an important role in non-radiative carrier recombination and thus in degrading optical quality of the alloys, harmful to performance of potential optoelectronic and photonic devices based on these dilute nitrides. (author)

  4. UK irradiation experience relevant to advanced carbide fuel concepts for LMFBR's

    International Nuclear Information System (INIS)

    Bagley, K.Q.; Batey, W.; Paris, R.; Sloss, W.M.; Snape, G.P.

    1977-01-01

    Despite discouraging prognoses of fabrication and reprocessing problems, it is recognized that the quest for a carbide fuel pin design which fully exploits the favourable density and thermal conductivity of (U,Pu) monocarbide must be maintained. Studies in aid of carbide fuel development have, therefore, continued in the UK in parallel with those on oxide, albeit at a substantially lower level of effort, and a sufficient body of irradiation experience has been accumulated to allow discrimination of realistic fuel pin designs

  5. Examination of the Combustion Morphology of Ziconium Carbide Using Scanning Electron Microscopy

    OpenAIRE

    Newbold, Brian R.

    1997-01-01

    Calculation of viscous particle damping of acoustic combustion instability in solid propellant motors requires an understanding of the combustion behavior of added particles and oxides. A simple hydrogen/oxygen flame was used to ignite carefully sieved zirconium carbide particles which were impacted on slides at different levels below the burner. Scanning electron microscopy revealed that zirconium carbide has a complex heterogeneous combustion morphology. Initially, particles are partly v...

  6. Thermodynamics of silicon nitridation - Effect of hydrogen

    Science.gov (United States)

    Shaw, N. J.; Zeleznik, F. J.

    1982-01-01

    Equilibrium compositions for the nitridization of Si were calculated to detect the effectiveness of H2 in removal of the oxide film and in increasing the concentration of SiO and reducing the proportions of O2. Gibbs free energy for the formation of SiN2O was computed above 1685 K, and at lower temperatures. The thermodynamic properties of SiN2O2 were then considered from 1000-3000 K, taking into account the known thermodynamic data for 39 molecular combinations of the Si, Ni, and O. The gases formed were assumed ideal mixtures with pure phase condensed species. The mole fractions were obtained for a system of SiO2 with each Si particle covered with a thin layer of SiO2 before nitridation, and a system in which the nitriding atmosphere had access to the Si. The presence of H2 was determined to enhance the removal of NiO2 in the first system, decrease the partial pressure of O2, increase the partial pressures of SiO, Si, H2O, NH3, and SiH4, while its effects were negligible in the Si system.

  7. New Icosahedral Boron Carbide Semiconductors

    Science.gov (United States)

    Echeverria Mora, Elena Maria

    Novel semiconductor boron carbide films and boron carbide films doped with aromatic compounds have been investigated and characterized. Most of these semiconductors were formed by plasma enhanced chemical vapor deposition. The aromatic compound additives used, in this thesis, were pyridine (Py), aniline, and diaminobenzene (DAB). As one of the key parameters for semiconducting device functionality is the metal contact and, therefore, the chemical interactions or band bending that may occur at the metal/semiconductor interface, X-ray photoemission spectroscopy has been used to investigate the interaction of gold (Au) with these novel boron carbide-based semiconductors. Both n- and p-type films have been tested and pure boron carbide devices are compared to those containing aromatic compounds. The results show that boron carbide seems to behave differently from other semiconductors, opening a way for new analysis and approaches in device's functionality. By studying the electrical and optical properties of these films, it has been found that samples containing the aromatic compound exhibit an improvement in the electron-hole separation and charge extraction, as well as a decrease in the band gap. The hole carrier lifetimes for each sample were extracted from the capacitance-voltage, C(V), and current-voltage, I(V), curves. Additionally, devices, with boron carbide with the addition of pyridine, exhibited better collection of neutron capture generated pulses at ZERO applied bias, compared to the pure boron carbide samples. This is consistent with the longer carrier lifetimes estimated for these films. The I-V curves, as a function of external magnetic field, of the pure boron carbide films and films containing DAB demonstrate that significant room temperature negative magneto-resistance (> 100% for pure samples, and > 50% for samples containing DAB) is possible in the resulting dielectric thin films. Inclusion of DAB is not essential for significant negative magneto

  8. Production of silicon carbide bodies

    International Nuclear Information System (INIS)

    Parkinson, K.

    1981-01-01

    A body consisting essentially of a coherent mixture of silicon carbide and carbon for subsequent siliconising is produced by casting a slip comprising silicon carbide and carbon powders in a porous mould. Part of the surface of the body, particularly internal features, is formed by providing within the mould a core of a material which retains its shape while casting is in progress but is compressed by shrinkage of the cast body as it dries and is thereafter removable from the cast body. Materials which are suitable for the core are expanded polystyrene and gelatinous products of selected low elastic modulus. (author)

  9. High yield silicon carbide prepolymers

    International Nuclear Information System (INIS)

    Baney, R.H.

    1982-01-01

    Prepolymers which exhibit good handling properties, and are useful for preparing ceramics, silicon carbide ceramic materials and articles containing silicon carbide, are polysilanes consisting of 0 to 60 mole% (CH 3 ) 2 Si units and 40 to 100 mole% CH 3 Si units, all Si valences being satisfied by CH 3 groups, other Si atoms, or by H atoms, the latter amounting to 0.3 to 2.1 weight% of the polysilane. They are prepared by reducing the corresponding chloro- or bromo-polysilanes with at least the stoichiometric amount of a reducing agent, e.g. LiAlH 4 . (author)

  10. Ceramic material suitable for repair of a space vehicle component in a microgravity and vacuum environment, method of making same, and method of repairing a space vehicle component

    Science.gov (United States)

    Riedell, James A. (Inventor); Easler, Timothy E. (Inventor)

    2009-01-01

    A precursor of a ceramic adhesive suitable for use in a vacuum, thermal, and microgravity environment. The precursor of the ceramic adhesive includes a silicon-based, preceramic polymer and at least one ceramic powder selected from the group consisting of aluminum oxide, aluminum nitride, boron carbide, boron oxide, boron nitride, hafnium boride, hafnium carbide, hafnium oxide, lithium aluminate, molybdenum silicide, niobium carbide, niobium nitride, silicon boride, silicon carbide, silicon oxide, silicon nitride, tin oxide, tantalum boride, tantalum carbide, tantalum oxide, tantalum nitride, titanium boride, titanium carbide, titanium oxide, titanium nitride, yttrium oxide, zirconium diboride, zirconium carbide, zirconium oxide, and zirconium silicate. Methods of forming the ceramic adhesive and of repairing a substrate in a vacuum and microgravity environment are also disclosed, as is a substrate repaired with the ceramic adhesive.

  11. Transition metal carbide and boride abrasive particles

    International Nuclear Information System (INIS)

    Valdsaar, H.

    1978-01-01

    Abrasive particles and their preparation are discussed. The particles consist essentially of a matrix of titanium carbide and zirconium carbide, at least partially in solid solution form, and grains of crystalline titanium diboride dispersed throughout the carbide matrix. These abrasive particles are particularly useful as components of grinding wheels for abrading steel. 1 figure, 6 tables

  12. Plasmonic Titanium Nitride Nanostructures via Nitridation of Nanopatterned Titanium Dioxide

    DEFF Research Database (Denmark)

    Guler, Urcan; Zemlyanov, Dmitry; Kim, Jongbum

    2017-01-01

    Plasmonic titanium nitride nanostructures are obtained via nitridation of titanium dioxide. Nanoparticles acquired a cubic shape with sharper edges following the rock-salt crystalline structure of TiN. Lattice constant of the resulting TiN nanoparticles matched well with the tabulated data. Energy...

  13. Advances in carbide fuel element development for fast reactor application

    International Nuclear Information System (INIS)

    Dienst, W.; Kleykamp, H.; Muehling, G.; Reiser, H.; Steiner, H.; Thuemmler, F.; Wedermeyer, H.; Weimar, P.

    1977-01-01

    The features of the carbide fuel development programme are reviewed and evaluated. Single pin and bundle irradiations are carried out under thermal, epithermal and fast flux conditions, the latter in the DFR and KNK-II reactors. Several fuel concepts in the region of representative SNR clad temperatures are compared by parameter and performance tests. A conservative concept is based on He-bonded 8 mm pins with (U,Pu)C pellets and a smear density of 75% TD, operating at 800 W/cm rod power and burnup to 70 MWd/kg. The preparation of mixed carbide fuels is carried out by carbothermic reduction of the oxides in different methods supported by equivalent carbon content, grain size and phase distribution analysis. The fuel for subassembly performance tests is produced in a pilot plant of 0,5 t/year capacity. Compatibility studies reveal that cladding carburization is the only chemical interaction with carbide fuels. This effect leads to a reduction in ductility of the stainless steel. Fission products apparently play no role in the compatibility behaviour. Comprehensive studies lead to reliable information on the chemical and thermodynamic state of the fuel under irradiation. The swelling of carbide fuels and the fission gas release are examined and analysed. Cladding plastic strain by fuel swelling occurs during steady-state operation because the irradiation creep is rather slow compared to oxide fuels. The cladding strain observed depends on the fuel porosity and the cladding strength. The development of carbide fuel pins is complemented by the application of comprehensive computer models. In addition to the steady-state tests power cycling and safety tests are under performance. Up to 1980 the results are summarized for the final design and specification. The development target of the present program is to fabricate several subassemblies for test operation in the SNR 300 by 1981

  14. Gas cooled fast breeder reactors using mixed carbide fuel

    International Nuclear Information System (INIS)

    Kypreos, S.

    1976-09-01

    The fast reactors being developed at the present time use mixed oxide fuel, stainless-steel cladding and liquid sodium as coolant (LMFBR). Theoretical and experimental designing work has also been done in the field of gas-cooled fast breeder reactors. The more advanced carbide fuel offers greater potential for developing fuel systems with doubling times in the range of ten years. The thermohydraulic and physics performance of a GCFR utilising this fuel is assessed. One question to be answered is whether helium is an efficient coolant to be coupled with the carbide fuel while preserving its superior neutronic performance. Also, an assessment of the fuel cycle cost in comparison to oxide fuel is presented. (Auth.)

  15. An electrochemical process for the recycling of tungsten carbide scrap

    International Nuclear Information System (INIS)

    Johns, M.W.

    1984-01-01

    An account is given of the development of a number of designs for electrochemical cells, and the subsequent construction and operation of a vibrating-plate cell capable of oxidizing 15 kilograms of tungsten carbide a day to a crude tungstic acid precipitate, with similtaneous recovery of cobalt metal on the cathode. The effects on the process of the reagent concentration, temperature, current density, and cathode material are discussed

  16. Optical characterization of gallium nitride

    NARCIS (Netherlands)

    Kirilyuk, Victoria

    2002-01-01

    Group III-nitrides have been considered a promising system for semiconductor devices since a few decades, first for blue- and UV-light emitting diodes, later also for high-frequency/high-power applications. Due to the lack of native substrates, heteroepitaxially grown III-nitride layers are usually

  17. Fundamentals of Passive Oxidation In SiC and Si3N4

    Science.gov (United States)

    Thomas-Ogbuji, Linus U.

    1998-01-01

    The very slow oxidation kinetics of silicon carbide and silicon nitride, which derive from their adherent and passivating oxide films, has been explored at length in a broad series of studies utilizing thermogravimetric analysis, electron and optical micrography, energy dispersive spectrometry, x-ray diffractometry, micro-analytical depth profiling, etc. Some interesting microstructural phenomena accompanying the process of oxidation in the two materials will be presented. In Si3N4 the oxide is stratified, with an SiO2 topscale (which is relatively impervious to O2)underlain by a coherent subscale of silicon oxynitride which is even less permeable to O2- Such "defence in depth" endows Si3N4 with what is perhaps the highest oxidation resistance of any material, and results in a unique set of oxidation processes. In SiC the oxidation reactions are much simpler, yet new issues still emerge; for instance, studies involving controlled devitrification of the amorphous silica scale confirmed that the oxidation rate of SiC drops by more than an order of magnitude when the oxide scale fully crystallizes.

  18. Boron Carbide: Stabilization of Highly-Loaded Aqueous Suspensions, Pressureless Sintering, and Room Temperature Injection Molding

    Science.gov (United States)

    Diaz-Cano, Andres

    Boron carbide (B4C) is the third hardest material after diamond and cubic boron nitride. It's unique combination of properties makes B4C a highly valuable material. With hardness values around 35 MPa, a high melting point, 2450°C, density of 2.52 g/cm3, and high chemical inertness, boron carbide is used in severe wear components, like cutting tools and sandblasting nozzles, nuclear reactors' control rots, and finally and most common application, armor. Production of complex-shaped ceramic component is complex and represents many challenges. Present research presents a new and novel approach to produce complex-shaped B4C components. Proposed approach allows forming to be done at room temperatures and under very low forming pressures. Additives and binder concentrations are kept as low as possible, around 5Vol%, while ceramics loadings are maximized above 50Vol%. Given that proposed approach uses water as the main solvent, pieces drying is simple and environmentally safe. Optimized formulation allows rheological properties to be tailored and adjust to multiple processing approaches, including, injection molding, casting, and additive manufacturing. Boron carbide samples then were pressureless sintered. Due to the high covalent character of boron carbide, multiples sintering aids and techniques have been proposed in order to achieve high levels of densification. However, is not possible to define a clear sintering methodology based on literature. Thus, present research developed a comprehensive study on the effect of multiple sintering aids on the densification of boron carbide when pressureless sintered. Relative densities above 90% were achieved with values above 30MPa in hardness. Current research allows extending the uses and application of boron carbide, and other ceramic systems, by providing a new approach to produce complex-shaped components with competitive properties.

  19. Suspended HfO2 photonic crystal slab on III-nitride/Si platform

    International Nuclear Information System (INIS)

    Wang, Yongjin; Feng, Jiao; Cao, Ziping; Zhu, Hongbo

    2014-01-01

    We present here the fabrication of suspended hafnium oxide (HfO 2 ) photonic crystal slab on a III-nitride/Si platform. The calculations are performed to model the suspended HfO 2 photonic crystal slab. Aluminum nitride (AlN) film is employed as the sacrificial layer to form air gap. Photonic crystal patterns are defined by electron beam lithography and transferred into HfO 2 film, and suspended HfO 2 photonic crystal slab is achieved on a III-nitride/Si platform through wet-etching of AlN layer in the alkaline solution. The method is promising for the fabrication of suspended HfO 2 nanostructures incorporating into a III-nitride/Si platform, or acting as the template for epitaxial growth of III-nitride materials. (orig.)

  20. SONOS memories with embedded silicon nanocrystals in nitride

    International Nuclear Information System (INIS)

    Liu, Mei-Chun; Chiang, Tsung-Yu; Chao, Tien-Sheng; Kuo, Po-Yi; Lei, Tan-Fu; Chou, Ming-Hong; Wu, Yi-Hong; Cheng, Ching-Hwa; Liu, Sheng-Hsien; Yang, Wen-Luh; You, Hsin-Chiang

    2008-01-01

    We have successfully demonstrated SONOS memories with embedded Si-NCs in silicon nitride. This new structure exhibits excellent characteristics in terms of larger memory windows and longer retention time compared to control devices. Using the same thickness 2.5 nm of the bottom tunneling oxide, we found that N 2 O is better than O 2 oxide. Retention property is improved when the thickness of N 2 O is increased to 3.0 nm

  1. Fluorescent Silicon Carbide and its Applications in White Light-Emitting Diodes

    DEFF Research Database (Denmark)

    Ou, Yiyu

    light extraction efficiency are presented. White LEDs are the most promising techniques to replace the conventional lighting sources. A typical white LED consists of a Gallium Nitride (GaN) blue or Ultraviolet (UV) LED stack and a wavelengthconversion material. Silicon Carbide (SiC) has a wide optical...... rendering performance and a much longer material lifetime compared with the commonly used wavelength-conversion material like Phosphors. In this thesis, f-SiC with different doping concentrations are analyzed and optimized in order to enhance the quantum efficiency. On the other hand, semiconductor...

  2. Crystallo-chemistry of actinide nitrides (U1-yPuy)N and effect of impurities

    International Nuclear Information System (INIS)

    Beauvy, M.; Coulon-Picard, E.; Pelletier, M.

    2004-01-01

    Investigations on actinide nitrides has been done in our Laboratories for Fast Breeder Reactors since the seventies and some properties are reported to show the interest for these fuels. Today, the actinide nitrides are reconsidered as possible fuels for the future fission reactors (GFR and LMFR selected by the international forum Generation IV). The results of new investigations on crystal structure of mixed mono-nitrides (U,Pu)N, and the effects of oxygen and carbon contaminations on this structure are presented. The cubic 'NaCl-fcc' type structure of actinide nitrides AnN with space group O5/h-Fm3m does not respect the 'Vegard law' model for the mixed nitrides (U 1-y Pu y )N. These nitrides are usually considered with strong metallic character associated with partial ionic bonding, but the ionic contribution in the An-N bonding determined in this work is very important and near 41.6% for UN and PuN. From results published on resistivity of mixed nitrides, the data on bonding must be also modified for partial covalence. This is in good agreement with the experimental lattice parameters which are not compatible with dominant metallic bonding. The numbers of bonding electrons in the nitrides (U 1-y Pu y )N are reevaluated and the low values proposed comparatively with those previously published confirm the strong ionic character with high concentration of An 3+ ions. The solubility of oxygen and carbon in actinide nitrides (U 1-y Pu y )N are discussed from measurements on volume concentration of actinide oxide phase, total oxygen and carbon contents, and lattice parameter of nitrides. The oxygen solubility limit in UN is near 1000 ppm, with a lightly higher value of 1200 ppm for the mixed nitride (U 0.8 Pu 0.2 )N. The effects of oxygen or carbon atoms in the lattice of (U 1-y Pu y )N are analysed

  3. Mesoporous coaxial titanium nitride-vanadium nitride fibers of core-shell structures for high-performance supercapacitors.

    Science.gov (United States)

    Zhou, Xinhong; Shang, Chaoqun; Gu, Lin; Dong, Shanmu; Chen, Xiao; Han, Pengxian; Li, Lanfeng; Yao, Jianhua; Liu, Zhihong; Xu, Hongxia; Zhu, Yuwei; Cui, Guanglei

    2011-08-01

    In this study, titanium nitride-vanadium nitride fibers of core-shell structures were prepared by the coaxial electrospinning, and subsequently annealed in the ammonia for supercapacitor applications. These core-shell (TiN-VN) fibers incorporated mesoporous structure into high electronic conducting transition nitride hybrids, which combined higher specific capacitance of VN and better rate capability of TiN. These hybrids exhibited higher specific capacitance (2 mV s(-1), 247.5 F g(-1)) and better rate capability (50 mV s(-1), 160.8 F g(-1)), which promise a good candidate for high-performance supercapacitors. It was also revealed by electrochemical impedance spectroscopy (EIS) and X-ray photoelectron spectroscopy (XPS) characterization that the minor capacitance fade originated from the surface oxidation of VN and TiN.

  4. Hot pressing of uranium nitride and mixed uranium plutonium nitride

    International Nuclear Information System (INIS)

    Chang, J.Y.

    1975-01-01

    The hot pressing characteristics of uranium nitride and mixed uranium plutonium nitride were studied. The utilization of computer programs together with the experimental technique developed in the present study may serve as a useful purpose of prediction and fabrication of advanced reactor fuel and other high temperature ceramic materials for the future. The densification of nitrides follow closely with a plastic flow theory expressed as: d rho/ dt = A/T(t) (1-rho) [1/1-(1-rho)/sup 2/3/ + B1n (1-rho)] The coefficients, A and B, were obtained from experiment and computer curve fitting. (8 figures) (U.S.)

  5. High Current Oxide Cathodes

    National Research Council Canada - National Science Library

    Luhmann, N

    2000-01-01

    .... The vacuum are plasma deposition gun developed at Lawrence Berkeley National Laboratory (LBNL) has been used to deposit oxides and nitrides with very precise control over deposition rate and composition.

  6. Present status of uranium-plutonium mixed carbide fuel development for LMFBR

    International Nuclear Information System (INIS)

    Handa, Muneo; Suzuki, Yasufumi.

    One Oarai characteristic of a carbide fuel is that its doubling time is about 13 years which is only about half as long as that of an oxide fuel. The development of carbide fuels in the past ten years has been truly remarkable. Especially, through the new fuel development program initiated in 1974 in the United States, success has been achieved with respect to He- and Na-bond fuels in obtaining a 16 a/o burning rate without damage to cladding tubes. In 1984 at FFTF, a radiation of a fuel assembly consisting 91 fuel pins is contemplated. On the other hand, in Japan, in 1974, a Fuel Research Wing specializing in the study of carbide fuels was constructed in the Oarai Laboratory of the Atomic Energy Research Institute and in the fall of 1982, was successful in fabricating two carbide fuel pins having different chemical compositions

  7. A study on the formation of uranium carbide in an induction furnace

    International Nuclear Information System (INIS)

    Song, In Young; Lee, Yoon Sang; Kim, Eung Soo; Lee, Don Bae; Kim, Chang Kyu

    2005-01-01

    Uranium is a typical carbide-forming element. Three carbides, UC, U 2 C 3 and UC 2 , are formed in the uranium-carbon system. The most important of these as fuel is uranium monocarbide UC. It is well known that Uranium carbides can be obtained by three basic methods: 1) by reaction of uranium metal with carbon; 2) by reaction of uranium metal powder with gaseous hydrocarbons; 3) by reaction of uranium oxides with carbon. The use of uranium monocarbide, or materials based on it, has great prospects as fuel for nuclear reactors. It is quite possible that uranium dicarbide UC 2 may also acquire great importance as a fuel, particularly in dispersion fuel elements with graphite matrix. In the present study, uranium carbides are obtained by direct reaction of uranium metal with graphite in a high frequency induction furnace

  8. Electrospun Gallium Nitride Nanofibers

    International Nuclear Information System (INIS)

    Melendez, Anamaris; Morales, Kristle; Ramos, Idalia; Campo, Eva; Santiago, Jorge J.

    2009-01-01

    The high thermal conductivity and wide bandgap of gallium nitride (GaN) are desirable characteristics in optoelectronics and sensing applications. In comparison to thin films and powders, in the nanofiber morphology the sensitivity of GaN is expected to increase as the exposed area (proportional to the length) increases. In this work we present electrospinning as a novel technique in the fabrication of GaN nanofibers. Electrospinning, invented in the 1930s, is a simple, inexpensive, and rapid technique to produce microscopically long ultrafine fibers. GaN nanofibers are produced using gallium nitrate and dimethyl-acetamide as precursors. After electrospinning, thermal decomposition under an inert atmosphere is used to pyrolyze the polymer. To complete the preparation, the nanofibers are sintered in a tube furnace under a NH 3 flow. Both scanning electron microscopy and profilometry show that the process produces continuous and uniform fibers with diameters ranging from 20 to a few hundred nanometers, and lengths of up to a few centimeters. X-ray diffraction (XRD) analysis shows the development of GaN nanofibers with hexagonal wurtzite structure. Future work includes additional characterization using transmission electron microscopy and XRD to understand the role of precursors and nitridation in nanofiber synthesis, and the use of single nanofibers for the construction of optical and gas sensing devices.

  9. Uranium sesqui nitride synthesis and its use as catalyst for the thermo decomposition of ammonia

    International Nuclear Information System (INIS)

    Rocha, Soraya Maria Rizzo da

    1996-01-01

    The preoccupation to have a secure destination for metallic uranium scraps and wastes and to search new non-nuclear uses for the huge amount of depleted metal uranium accumulated at the nuclear industry encouraged the study of the uranium sesqui nitride synthesis and its use. The use of uranium sesqui nitride as a catalyst for the thermo decomposition of ammonia for the hydrogen production has enormous significance. One of the most important nuclear cycle step is the reduction of the higher uranium oxides for the production of uranium dioxide and its conversion to uranium tetrafluoride. The reduction of the UO 3 and U 3 O 8 oxides is accomplished by the gas-solid reaction with elementary hydrogen. For economical purposes and for the safety concern the nuclear industry prefers to manufacture the hydrogen gas at the local and at the moment of use, exploring the catalytic decomposition of ammonia vapor. Using metallic uranium scraps as the raw material the obtention of its nitride was achieved by the reaction with ammonia. The results of the chemical and physical characterization of the prepared uranium sesqui nitride and its behavior as a catalyst for the cracking of ammonia are commented. A lower ammonia cracking temperature (550 deg C) using the uranium sesqui nitride compared with recommended industrial catalysts iron nitride (650 deg C) and manganese nitride (700 deg C) sounds reliable and economically advantageous. (author)

  10. Gravimetric determination of carbon in uranium-plutonium carbide materials

    International Nuclear Information System (INIS)

    Kavanaugh, H.J.; Dahlby, J.W.; Lovell, A.P.

    1979-12-01

    A gravimetric method for determining carbon in uranium-plutonium carbide materials was developed to analyze six samples simultaneously. The samples are burned slowly in an oxygen atmosphere at approximately 900 0 C, and the gases generated are passed through Schuetze's oxidizing reagent (iodine pentoxide on silica gel) to assure quantitative oxidation of the CO to CO 2 . The CO 2 is collected on Ascarite and weighed. This method was tested using a tungsten carbide reference material (NBS-SRM-276) and a (U,Pu)C sample. For 42 analyses of the tungsten carbide, which has a certified carbon content of 6.09%, an average value of 6.09% was obtained with a standard deviation of 0.01 7 % or a relative standard deviation of 0.28%. For 17 analyses of the (U,Pu)C sample, an average carbon content of 4.97% was found with a standard deviation of 0.01 2 % or a relative standard deviation of 0.24%

  11. Superconductivity in borides and carbides

    International Nuclear Information System (INIS)

    Muranaka, Takahiro

    2007-01-01

    It was thought that intermetallic superconductors do not exhibit superconductivity at temperatures over 30 K because of the Bardeen-Cooper-Schrieffer (BCS) limit; therefore, researchers have been interested in high-T c cuprates. Our group discovered high-T c superconductivity in MgB 2 at 39 K in 2001. This discovery has initiated a substantial interest in the potential of high-T c superconductivity in intermetallic compounds that include 'light' elements (borides, carbides, etc.). (author)

  12. Mechanical-thermal synthesis of chromium carbides

    International Nuclear Information System (INIS)

    Cintho, Osvaldo Mitsuyuki; Favilla, Eliane Aparecida Peixoto; Capocchi, Jose Deodoro Trani

    2007-01-01

    The present investigation deals with the synthesis of chromium carbides (Cr 3 C 2 and Cr 7 C 3 ), starting from metallic chromium (obtained from the reduction of Cr 2 O 3 with Al) and carbon (graphite). The synthesis was carried out via high energy milling, followed by heat-treating of pellets made of different milled mixtures at 800 o C, for 2 h, under an atmosphere of argon. A SPEX CertPrep 8000 Mixer/Mill was used for milling under argon atmosphere. A tool steel vat and two 12.7 mm diameter chromium steel balls were used. The raw materials used and the products were characterized by differential thermal analysis, thermo gravimetric analysis, X-ray diffraction, electronic microscopy and X-ray fluorescence chemical analysis. The following variables were investigated: the quantity of carbon in the mixture, the milling time and the milling power. Mechanical activation of the reactant mixture depends upon the milling power ratio used for processing. The energy liberated by the reduction of the chromium oxide with aluminium exhibits a maximum for milling power ratio between 5:1 and 7.5:1. Self-propagating reaction occurred for all heat-treated samples whatever the carbon content of the sample and the milling power ratio used. Bearing carbon samples exhibited hollow shell structures after the reaction. The level of iron contamination of the milled samples was kept below 0.3% Fe. The self-propagated reaction caused high temperatures inside the samples as it may be seen by the occurrence of spherules, dendrites and whiskers. The carbon content determines the type of chromium carbide formed

  13. Localized surface phonon polariton resonances in polar gallium nitride

    Energy Technology Data Exchange (ETDEWEB)

    Feng, Kaijun, E-mail: kfeng@nd.edu; Islam, S. M.; Verma, Jai; Hoffman, Anthony J. [Department of Electrical Engineering, University of Notre Dame, Notre Dame, Indiana 46556 (United States); Streyer, William; Wasserman, Daniel [Department of Electrical and Computer Engineering, University of Illinois Urbana-Champaign, Urbana, Illinois 61801 (United States); Jena, Debdeep [Department of Electrical Engineering, University of Notre Dame, Notre Dame, Indiana 46556 (United States); School of Electrical and Computer Engineering, Cornell University, Ithaca, New York 14850 (United States)

    2015-08-24

    We demonstrate the excitation of localized surface phonon polaritons in an array of sub-diffraction pucks fabricated in an epitaxial layer of gallium nitride (GaN) on a silicon carbide (SiC) substrate. The array is characterized via polarization- and angle-dependent reflection spectroscopy in the mid-infrared, and coupling to several localized modes is observed in the GaN Reststrahlen band (13.4–18.0 μm). The same structure is simulated using finite element methods and the charge density of the modes are studied; transverse dipole modes are identified for the transverse electric and magnetic polarizations and a quadrupole mode is identified for the transverse magnetic polarization. The measured mid-infrared spectrum agrees well with numerically simulated spectra. This work could enable optoelectronic structures and devices that support surface modes at mid- and far-infrared wavelengths.

  14. The initial growth stage in PVT growth of aluminum nitride

    Energy Technology Data Exchange (ETDEWEB)

    Heimann, P.; Epelbaum, B.M.; Bickermann, M.; Winnacker, A. [Department of Materials Science 6, University of Erlangen-Nuernberg, Martensstr. 7, 91058 Erlangen (Germany); Nagata, S. [Functional Materials Development Center, Research Laboratories, JFE Mineral Company, Ltd., 1, Niihama-cho, Chuou-ku, Chiba-shi, Chiba 260-0826 (Japan)

    2006-06-15

    The main issue in homoepitaxial growth of aluminum nitride (AlN) on native seed substrates is the formation of an aluminum oxynitride (AlON) layer at temperatures between 1850-1950 C leading to polycrystalline growth. On the contrary, heteroepitaxial growth of AlN on silicon carbide (SiC) is relatively easy to achieve due to natural formation of a thin molten layer of (Al{sub 2}OC{sub x}) on the seed surface and consequent growth of AlN via the molten buffer layer. Optimization of the seeding process can be achieved by use of ultra-pure starting material. Another critical issue of AlN growth on SiC is cracking of the grown layer upon cooling as a result of different thermal expansion coefficients. (copyright 2006 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  15. Method for producing polycrystalline boron nitride

    International Nuclear Information System (INIS)

    Alexeevskii, V.P.; Bochko, A.V.; Dzhamarov, S.S.; Karpinos, D.M.; Karyuk, G.G.; Kolomiets, I.P.; Kurdyumov, A.V.; Pivovarov, M.S.; Frantsevich, I.N.; Yarosh, V.V.

    1975-01-01

    A mixture containing less than 50 percent of graphite-like boron nitride treated by a shock wave and highly defective wurtzite-like boron nitride obtained by a shock-wave method is compressed and heated at pressure and temperature values corresponding to the region of the phase diagram for boron nitride defined by the graphite-like compact modifications of boron nitride equilibrium line and the cubic wurtzite-like boron nitride equilibrium line. The resulting crystals of boron nitride exhibit a structure of wurtzite-like boron nitride or of both wurtzite-like and cubic boron nitride. The resulting material exhibits higher plasticity as compared with polycrystalline cubic boron nitride. Tools made of this compact polycrystalline material have a longer service life under impact loads in machining hardened steel and chilled iron. (U.S.)

  16. Helium diffusion in irradiated boron carbide

    International Nuclear Information System (INIS)

    Hollenberg, G.W.

    1981-03-01

    Boron carbide has been internationally adopted as the neutron absorber material in the control and safety rods of large fast breeder reactors. Its relatively large neutron capture cross section at high neutron energies provides sufficient reactivity worth with a minimum of core space. In addition, the commercial availability of boron carbide makes it attractive from a fabrication standpoint. Instrumented irradiation experiments in EBR-II have provided continuous helium release data on boron carbide at a variety of operating temperatures. Although some microstructural and compositional variations were examined in these experiments most of the boron carbide was prototypic of that used in the Fast Flux Test Facility. The density of the boron carbide pellets was approximately 92% of theoretical. The boron carbide pellets were approximately 1.0 cm in diameter and possessed average grain sizes that varied from 8 to 30 μm. Pellet centerline temperatures were continually measured during the irradiation experiments

  17. Humidity-dependent stability of amorphous germanium nitrides fabricated by plasma nitridation

    International Nuclear Information System (INIS)

    Kutsuki, Katsuhiro; Okamoto, Gaku; Hosoi, Takuji; Shimura, Takayoshi; Watanabe, Heiji

    2007-01-01

    We have investigated the stability of amorphous germanium nitride (Ge 3 N 4 ) layers formed by plasma nitridation of Ge(100) surfaces using x-ray photoelectron spectroscopy and atomic force microscopy. We have found that humidity in the air accelerates the degradation of Ge 3 N 4 layers and that under 80% humidity condition, most of the Ge-N bonds convert to Ge-O bonds, producing a uniform GeO 2 layer, within 12 h even at room temperature. After this conversion of nitrides to oxides, the surface roughness drastically increased by forming GeO 2 islands on the surfaces. These findings indicate that although Ge 3 N 4 layers have superior thermal stability compared to the GeO 2 layers, Ge 3 N 4 reacts readily with hydroxyl groups and it is therefore essential to take the best care of the moisture in the fabrication of Ge-based devices with Ge 3 N 4 insulator or passivation layers

  18. A self-assembled 2D/2D-type protonated carbon nitride-modified graphene oxide nanocomposite with improved photocatalytic activity

    Science.gov (United States)

    Xie, Linfang; Ni, Jie; Tang, Bo; He, Guangyu; Chen, Haiqun

    2018-03-01

    A surface charge modified g-C3N4 was successfully prepared by protonation of nitric acid. Combination of the protonated g-C3N4 (pCN) and graphene oxide (GO) layers created a 2D/2D-type composite (pCN/GO) under the synergistic effect of sonication-exfoliation and self-assembly. The obtained 2D nanostructure of pCN/GO was explored by electron microscopy analysis. The photocatalytic degradation of rhodamine B (RhB) and ciprofloxacin (CIP) showed a distinctly high efficiency of pCN/GO-5% with excellent stability, which is superior not only to that of g-C3N4, pCN and g-C3N4/GO-5% nanocomposites we prepared, but also to what was reported previously. The optimized combination of GO and pCN afforded the pCN/GO composite intimate interfacial contact within the heterojunction, which promoted the separation of photogenerated electron-hole pairs as evidenced by zeta potential, photoluminescence and photocurrent measurements. A visible-light photocatalytic degradation mechanism associated with pCN/GO nanocomposites was also proposed.

  19. Crystallization of nodular cast iron with carbides

    Directory of Open Access Journals (Sweden)

    S. Pietrowski

    2008-12-01

    Full Text Available In this paper a crystallization process of nodular cast iron with carbides having a different chemical composition have been presented. It have been found, that an increase of molybdenum above 0,30% causes the ledeburutic carbides crystallization after (γ+ graphite eutectic phase crystallization. When Mo content is lower, these carbides crystallize as a pre-eutectic phase. In this article causes of this effect have been given.

  20. Zirconium nitride hard coatings

    International Nuclear Information System (INIS)

    Roman, Daiane; Amorim, Cintia Lugnani Gomes de; Soares, Gabriel Vieira; Figueroa, Carlos Alejandro; Baumvol, Israel Jacob Rabin; Basso, Rodrigo Leonardo de Oliveira

    2010-01-01

    Zirconium nitride (ZrN) nanometric films were deposited onto different substrates, in order to study the surface crystalline microstructure and also to investigate the electrochemical behavior to obtain a better composition that minimizes corrosion reactions. The coatings were produced by physical vapor deposition (PVD). The influence of the nitrogen partial pressure, deposition time and temperature over the surface properties was studied. Rutherford backscattering spectrometry (RBS), X-ray photoelectron spectroscopy (XPS), X-ray diffraction (XRD), scanning electron microscopy (SEM) and corrosion experiments were performed to characterize the ZrN hard coatings. The ZrN films properties and microstructure changes according to the deposition parameters. The corrosion resistance increases with temperature used in the films deposition. Corrosion tests show that ZrN coating deposited by PVD onto titanium substrate can improve the corrosion resistance. (author)

  1. Pyrochemical reprocessing of nitride fuel

    International Nuclear Information System (INIS)

    Nakazono, Yoshihisa; Iwai, Takashi; Arai, Yasuo

    2004-01-01

    Electrochemical behavior of actinide nitrides in LiCl-KCl eutectic melt was investigated in order to apply pyrochemical process to nitride fuel cycle. The electrode reaction of UN and (U, Nd)N was examined by cyclic voltammetry. The observed rest potential of (U, Nd)N depended on the equilibrium of U 3+ /UN and was not affected by the addition of NdN of 8 wt.%. (author)

  2. Superplastic forging nitride ceramics

    Science.gov (United States)

    Panda, P.C.; Seydel, E.R.; Raj, R.

    1988-03-22

    A process is disclosed for preparing silicon nitride ceramic parts which are relatively flaw free and which need little or no machining, said process comprising the steps of: (a) preparing a starting powder by wet or dry mixing ingredients comprising by weight from about 70% to about 99% silicon nitride, from about 1% to about 30% of liquid phase forming additive and from 1% to about 7% free silicon; (b) cold pressing to obtain a preform of green density ranging from about 30% to about 75% of theoretical density; (c) sintering at atmospheric pressure in a nitrogen atmosphere at a temperature ranging from about 1,400 C to about 2,200 C to obtain a density which ranges from about 50% to about 100% of theoretical density and which is higher than said preform green density, and (d) press forging workpiece resulting from step (c) by isothermally uniaxially pressing said workpiece in an open die without initial contact between said workpiece and die wall perpendicular to the direction of pressing and so that pressed workpiece does not contact die wall perpendicular to the direction of pressing, to substantially final shape in a nitrogen atmosphere utilizing a temperature within the range of from about 1,400 C to essentially 1,750 C and strain rate within the range of about 10[sup [minus]7] to about 10[sup [minus]1] seconds[sup [minus]1], the temperature and strain rate being such that surface cracks do not occur, said pressing being carried out to obtain a shear deformation greater than 30% whereby superplastic forging is effected.

  3. Diffusion mechanism in molten salt baths during the production of carbide coatings via thermal reactive diffusion

    Institute of Scientific and Technical Information of China (English)

    Aliakbar Ghadi; Hassan Saghafian; Mansour Soltanieh; Zhi-gang Yang

    2017-01-01

    The diffusion mechanism of carbide-forming elements from a molten salt bath to a substrate surface was studied in this research, with particular focus on the processes occurring in the molten bath at the time of coating. Metal, oxide, and metal-oxide baths were investi-gated, and the coating process was performed on H13 steel substrates. Scanning electron microscopy and electron-probe microanalysis were used to study the coated samples and the quenched salt bath. The thickness of the carbide coating layer was 6.5 ± 0.5, 5.2 ± 0.5, or 5.7 ± 0.5μm depending on whether it was deposited in a metal, oxide, or metal-oxide bath, respectively. The phase distribution of vanadium-rich regions was 63%, 57%, and 74% of the total coating deposited in metal, oxide, and metal-oxide baths, respectively. The results obtained using the metal bath indicated that undissolved suspended metal particles deposited onto the substrate surface. Then, carbon subsequently diffused to the sub-strate surface and reacted with the metal particles to form the carbides. In the oxide bath, oxide powders dissolved in the bath with or without binding to the oxidative structure (Na2O) of borax; they were then reduced by aluminum and converted into metal particles. We concluded that, in the metal and oxide baths, the deposition of metal particles onto the sample surface is an important step in the formation of the coating.

  4. The etching behaviour of silicon carbide compacts

    International Nuclear Information System (INIS)

    Jepps, N.W.; Page, T.F.

    1981-01-01

    A series of microstructural investigations has been undertaken in order to explore the reliability of particular etches in revealing microstructural detail in silicon carbide compacts. A series of specimens has been etched and examined following complete prior microstructural characterization by transmission electron microscopy (TEM), scanning electron microscopy (SEM) and X-ray diffractometry techniques. In particular, the sensitivity of both a molten salt (KOH/KNO 3 ) etch and a commonly-used oxidizing electrolytic 'colour' etch to crystal purity, crystallographic orientation and polytypic structure has been established. The molten salt etch was found to be sensitive to grain boundaries and stacking disorder while the electrolytic etch was found to be primarily sensitive to local purity and crystallographic orientation. Neither etch appeared intrinsically polytype sensitive. Specifically, for the 'colour' etch, the p- or n-type character of impure regions appears critical in controlling etching behaviour; p-type impurities inhibiting, and n-type impurities enhancing, oxidation. The need to interpret etching behaviour in a manner consistent with the results obtained by a variety of other microstructural techniques will be emphasized. (author)

  5. Preliminary Investigation of the Effect of Surface Treatment on the Strength of a Titanium Carbide - 30 Percent Nickel Base Cermet

    Science.gov (United States)

    Robins, Leonard; Grala, Edward M

    1957-01-01

    Specimens of a nickel-bonded titanium carbide cermet were given the following surface treatments: (1) grinding, (2) lapping, (3) blast cleaning, (4) acid roughening, (5) oxidizing, and (6) oxidizing and refinishing. Room-temperature modulus-of-rupture and impact strength varied with the different surface treatments. Considerable strength losses resulted from the following treatments: (1) oxidation at 1600 F for 100 hours, (2) acid roughening, and (3) severe grinding with 60-grit silicon carbide abrasive. The strength loss after oxidation was partially recovered by grit blasting or diamond grinding.

  6. Dissolution performance of plutonium nitride based fuel materials

    Energy Technology Data Exchange (ETDEWEB)

    Aneheim, E.; Hedberg, M. [Nuclear Chemistry, Chemistry and Chemical Engineering, Chalmers University of Technology, Kemivaegen 4, Gothenburg, SE41296 (Sweden)

    2016-07-01

    Nitride fuels have been regarded as one viable fuel option for Generation IV reactors due to their positive features compared to oxides. To be able to close the fuel cycle and follow the Generation IV concept, nitrides must, however, demonstrate their ability to be reprocessed. This means that the dissolution performance of actinide based nitrides has to be thoroughly investigated and assessed. As the zirconium stabilized nitrides show even better potential as fuel material than does the pure actinide containing nitrides, investigations on the dissolution behavior of both PuN and (Pu,Zr)N has been undertaken. If possible it is desirable to perform the fuel dissolutions using nitric acid. This, as most reprocessing strategies using solvent-solvent extraction are based on a nitride containing aqueous matrix. (Pu,Zr)N/C microspheres were produced using internal gelation. The spheres dissolution performance was investigated using nitric acid with and without additions of HF and Ag(II). In addition PuN fuel pellets were produced from powder and their dissolution performance were also assessed in a nitric acid based setting. It appears that both PuN and (Pu,Zr)N/C fuel material can be completely dissolved in nitric acid of high concentration with the use of catalytic amounts of HF. The amount of HF added strongly affects dissolution kinetics of (Pu, Zr)N and the presence of HF affects the 2 solutes differently, possibly due to inhomogeneity o the initial material. Large additions of Ag(II) can also be used to facilitate the dissolution of (Pu,Zr)N in nitric acid. PuN can be dissolved by pure nitric acid of high concentration at room temperature while (Pu, Zr)N is unaffected under similar conditions. At elevated temperature (reflux), (Pu,Zr)N can, however, also be dissolved by concentrated pure nitric acid.

  7. Memory characteristics of silicon nitride with silicon nanocrystals as a charge trapping layer of nonvolatile memory devices

    International Nuclear Information System (INIS)

    Choi, Sangmoo; Yang, Hyundeok; Chang, Man; Baek, Sungkweon; Hwang, Hyunsang; Jeon, Sanghun; Kim, Juhyung; Kim, Chungwoo

    2005-01-01

    Silicon nitride with silicon nanocrystals formed by low-energy silicon plasma immersion ion implantation has been investigated as a charge trapping layer of a polycrystalline silicon-oxide-nitride-oxide-silicon-type nonvolatile memory device. Compared with the control sample without silicon nanocrystals, silicon nitride with silicon nanocrystals provides excellent memory characteristics, such as larger width of capacitance-voltage hysteresis, higher program/erase speed, and lower charge loss rate at elevated temperature. These improved memory characteristics are derived by incorporation of silicon nanocrystals into the charge trapping layer as additional accessible charge traps with a deeper effective trap energy level

  8. Boron nitride nanotubes for spintronics.

    Science.gov (United States)

    Dhungana, Kamal B; Pati, Ranjit

    2014-09-22

    With the end of Moore's law in sight, researchers are in search of an alternative approach to manipulate information. Spintronics or spin-based electronics, which uses the spin state of electrons to store, process and communicate information, offers exciting opportunities to sustain the current growth in the information industry. For example, the discovery of the giant magneto resistance (GMR) effect, which provides the foundation behind modern high density data storage devices, is an important success story of spintronics; GMR-based sensors have wide applications, ranging from automotive industry to biology. In recent years, with the tremendous progress in nanotechnology, spintronics has crossed the boundary of conventional, all metallic, solid state multi-layered structures to reach a new frontier, where nanostructures provide a pathway for the spin-carriers. Different materials such as organic and inorganic nanostructures are explored for possible applications in spintronics. In this short review, we focus on the boron nitride nanotube (BNNT), which has recently been explored for possible applications in spintronics. Unlike many organic materials, BNNTs offer higher thermal stability and higher resistance to oxidation. It has been reported that the metal-free fluorinated BNNT exhibits long range ferromagnetic spin ordering, which is stable at a temperature much higher than room temperature. Due to their large band gap, BNNTs are also explored as a tunnel magneto resistance device. In addition, the F-BNNT has recently been predicted as an ideal spin-filter. The purpose of this review is to highlight these recent progresses so that a concerted effort by both experimentalists and theorists can be carried out in the future to realize the true potential of BNNT-based spintronics.

  9. Boron Nitride Nanotubes for Spintronics

    Directory of Open Access Journals (Sweden)

    Kamal B. Dhungana

    2014-09-01

    Full Text Available With the end of Moore’s law in sight, researchers are in search of an alternative approach to manipulate information. Spintronics or spin-based electronics, which uses the spin state of electrons to store, process and communicate information, offers exciting opportunities to sustain the current growth in the information industry. For example, the discovery of the giant magneto resistance (GMR effect, which provides the foundation behind modern high density data storage devices, is an important success story of spintronics; GMR-based sensors have wide applications, ranging from automotive industry to biology. In recent years, with the tremendous progress in nanotechnology, spintronics has crossed the boundary of conventional, all metallic, solid state multi-layered structures to reach a new frontier, where nanostructures provide a pathway for the spin-carriers. Different materials such as organic and inorganic nanostructures are explored for possible applications in spintronics. In this short review, we focus on the boron nitride nanotube (BNNT, which has recently been explored for possible applications in spintronics. Unlike many organic materials, BNNTs offer higher thermal stability and higher resistance to oxidation. It has been reported that the metal-free fluorinated BNNT exhibits long range ferromagnetic spin ordering, which is stable at a temperature much higher than room temperature. Due to their large band gap, BNNTs are also explored as a tunnel magneto resistance device. In addition, the F-BNNT has recently been predicted as an ideal spin-filter. The purpose of this review is to highlight these recent progresses so that a concerted effort by both experimentalists and theorists can be carried out in the future to realize the true potential of BNNT-based spintronics.

  10. Study and optimization of the carbothermic reduction process for obtaining boron carbide

    International Nuclear Information System (INIS)

    Castro, A.R.M. de.

    1989-01-01

    Boron carbide - B sub(4)C - is a ceramic material of technological importance due to its hardness and high chemical and thermal stabilities. Moreover, its high neutron capture cross section makes it suitable for application as neutron absorber in nuclear technology. The process for obtaining carbothermally derived boron carbide has been studied in two steps: firstly, the parameters of the boric acid → boron oxide dehydration reaction have been defined; secondly, the optimization of the carbothermal reduction reaction using boron oxide has been undertaken looking for boron carbide having low level of free carbon. The starting materials as well as the main products have been studied by chemical and spectrographic analyses, X-ray diffractometry, granulometric classification and scanning electron microscopy. The optimization of the carbothermic reduction process allowed for the development and set up of a fabrication procedure yielding high quality B sub(4) C powders, starting from low cost and easily available (in the Brazilian market) raw materials. (author)

  11. Novel fabrication of silicon carbide based ceramics for nuclear applications

    Science.gov (United States)

    Singh, Abhishek Kumar

    Advances in nuclear reactor technology and the use of gas-cooled fast reactors require the development of new materials that can operate at the higher temperatures expected in these systems. These materials include refractory alloys based on Nb, Zr, Ta, Mo, W, and Re; ceramics and composites such as SiC--SiCf; carbon--carbon composites; and advanced coatings. Besides the ability to handle higher expected temperatures, effective heat transfer between reactor components is necessary for improved efficiency. Improving thermal conductivity of the fuel can lower the center-line temperature and, thereby, enhance power production capabilities and reduce the risk of premature fuel pellet failure. Crystalline silicon carbide has superior characteristics as a structural material from the viewpoint of its thermal and mechanical properties, thermal shock resistance, chemical stability, and low radioactivation. Therefore, there have been many efforts to develop SiC based composites in various forms for use in advanced energy systems. In recent years, with the development of high yield preceramic precursors, the polymer infiltration and pyrolysis (PIP) method has aroused interest for the fabrication of ceramic based materials, for various applications ranging from disc brakes to nuclear reactor fuels. The pyrolysis of preceramic polymers allow new types of ceramic materials to be processed at relatively low temperatures. The raw materials are element-organic polymers whose composition and architecture can be tailored and varied. The primary focus of this study is to use a pyrolysis based process to fabricate a host of novel silicon carbide-metal carbide or oxide composites, and to synthesize new materials based on mixed-metal silicocarbides that cannot be processed using conventional techniques. Allylhydridopolycarbosilane (AHPCS), which is an organometal polymer, was used as the precursor for silicon carbide. Inert gas pyrolysis of AHPCS produces near-stoichiometric amorphous

  12. Nitrogen ion induced nitridation of Si(111) surface: Energy and fluence dependence

    Energy Technology Data Exchange (ETDEWEB)

    Kumar, Praveen [Jawaharlal Nehru Centre for Advanced Scientific Research, Bangalore 560064 (India); ISOM, Universidad Politecnia de Madrid, 28040 (Spain); Kumar, Mahesh [Physics and Energy Harvesting Group, National Physical Laboratory, New Delhi 110012 (India); Nötzel, R. [ISOM, Universidad Politecnia de Madrid, 28040 (Spain); Shivaprasad, S.M., E-mail: smsprasad@jncasr.ac.in [Jawaharlal Nehru Centre for Advanced Scientific Research, Bangalore 560064 (India)

    2014-06-01

    We present the surface modification of Si(111) into silicon nitride by exposure to energetic N{sub 2}{sup +} ions. In-situ UHV experiments have been performed to optimize the energy and fluence of the N{sub 2}{sup +} ions to form silicon nitride at room temperature (RT) and characterized in-situ by X-ray photoelectron spectroscopy. We have used N{sub 2}{sup +} ion beams in the energy range of 0.2–5.0 keV of different fluence to induce surface reactions, which lead to the formation of Si{sub x}N{sub y} on the Si(111) surface. The XPS core level spectra of Si(2p) and N(1s) have been deconvoluted into different oxidation states to extract qualitative information, while survey scans have been used for quantifying of the silicon nitride formation, valence band spectra show that as the N{sub 2}{sup +} ion fluence increases, there is an increase in the band gap. The secondary electron emission spectra region of photoemission is used to evaluate the change in the work function during the nitridation process. The results show that surface nitridation initially increases rapidly with ion fluence and then saturates. - Highlights: • A systematic study for the formation of silicon nitride on Si(111). • Investigation of optimal energy and fluence for energetic N{sub 2}{sup +} ions. • Silicon nitride formation at room temperature on Si(111)

  13. Low-temperature direct synthesis of mesoporous vanadium nitrides for electrochemical capacitors

    Energy Technology Data Exchange (ETDEWEB)

    Lee, Hae-Min [Institute of NT-IT Fusion Technology, Ajou University, 206 Worldcup-ro, Yeongtong-gu, Suwon 16499 (Korea, Republic of); Jeong, Gyoung Hwa [Department of Chemistry, Ulsan National Institute of Science and Technology (UNIST), Banyeon 100, Ulsan 44919 (Korea, Republic of); Kim, Sang-Wook [Department of Molecular Science and Technology, Ajou University, 206 Worldcup-ro, Yeongtong-gu, Suwon 16499 (Korea, Republic of); Kim, Chang-Koo, E-mail: changkoo@ajou.ac.kr [Department of Chemical Engineering and Department of Energy Systems Research, Ajou University, 206 Worldcup-ro, Yeongtong-gu, Suwon 16499 (Korea, Republic of)

    2017-04-01

    Highlights: • Vanadium nitrides were directly synthesized by a one-step chemical precipitation method. • This method was carried out at a low temperature of 70 °C. • Vanadium nitrides had a specific capacitance of 598 F/g. • The equivalent series resistance of the vanadium nitride electrode was 1.42 Ω after 5000 cycles. - Abstract: Mesoporous vanadium nitrides are directly synthesized by a one-step chemical precipitation method at a low temperature (70 °C). Structural and morphological analyses reveal that vanadium nitride consist of long and slender nanowhiskers, and mesopores with diameters of 2–5 nm. Compositional analysis confirms the presence of vanadium in the VN structure, along with oxidized vanadium. The cyclic voltammetry and charge-discharge tests indicate that the obtained material stores charges via a combination of electric double-layer capacitance and pseudocapacitance mechanisms. The vanadium nitride electrode exhibits a specific capacitance of 598 F/g at a current density of 4 A/g. After 5000 charge-discharge cycles, the electrode has an equivalent series resistance of 1.42 Ω and retains 83% of its initial specific capacitance. This direct low-temperature synthesis of mesoporous vanadium nitrides is a simple and promising method to achieve high specific capacitance and low equivalent series resistance for electrochemical capacitor applications.

  14. Leachability of nitrided ilmenite in hydrochloric acid

    CSIR Research Space (South Africa)

    Swanepoel, JJ

    2010-10-01

    Full Text Available Titanium nitride in upgraded nitrided ilmenite (bulk of iron removed) can selectively be chlorinated to produce titanium tetrachloride. Except for iron, most other components present during this low temperature (ca. 200 °C) chlorination reaction...

  15. Aluminum nitride insulating films for MOSFET devices

    Science.gov (United States)

    Lewicki, G. W.; Maserjian, J.

    1972-01-01

    Application of aluminum nitrides as electrical insulator for electric capacitors is discussed. Electrical properties of aluminum nitrides are analyzed and specific use with field effect transistors is defined. Operational limits of field effect transistors are developed.

  16. Muonium states in silicon carbide

    International Nuclear Information System (INIS)

    Patterson, B.D.; Baumeler, H.; Keller, H.; Kiefl, R.F.; Kuendig, W.; Odermatt, W.; Schneider, J.W.; Estle, T.L.; Spencer, D.P.; Savic, I.M.

    1986-01-01

    Implanted muons in samples of silicon carbide have been observed to form paramagnetic muonium centers (μ + e - ). Muonium precession signals in low applied magnetic fields have been observed at 22 K in a granular sample of cubic β-SiC, however it was not possible to determine the hyperfine frequency. In a signal crystal sample of hexagonal 6H-SiC, three apparently isotropic muonium states were observed at 20 K and two at 300 K, all with hyperfine frequencies intermediate between those of the isotropic muonium centers in diamond and silicon. No evidence was seen of an anisotropic muonium state analogous to the Mu * state in diamond and silicon. (orig.)

  17. Low temperature study of nonstoichiometric titanium carbide

    International Nuclear Information System (INIS)

    Tashmetov, M.Yu.

    2005-05-01

    By low temperature neutron diffraction method was studied structure in nonstoichiometric titanium carbide from room temperature up to 12K. It is found of low temperature phase in titanium carbide- TiC 0.71 . It is established region and borders of this phase. It is determined change of unit cell parameter. (author)

  18. Elastic modulus and fracture of boron carbide

    International Nuclear Information System (INIS)

    Hollenberg, G.W.; Walther, G.

    1978-12-01

    The elastic modulus of hot-pressed boron carbide with 1 to 15% porosity was measured at room temperature. K/sub IC/ values were determined for the same porosity range at 500 0 C by the double torsion technique. The critical stress intensity factor of boron carbide with 8% porosity was evaluated from 25 to 1200 0 C

  19. Optical characterisation of cubic silicon carbide

    International Nuclear Information System (INIS)

    Jackson, S.M.

    1998-09-01

    The varied properties of Silicon Carbide (SiC) are helping to launch the material into many new applications, particularly in the field of novel semiconductor devices. In this work, the cubic form of SiC is of interest as a basis for developing integrated optical components. Here, the formation of a suitable SiO 2 buried cladding layer has been achieved by high dose oxygen ion implantation. This layer is necessary for the optical confinement of propagating light, and hence optical waveguide fabrication. Results have shown that optical propagation losses of the order of 20 dB/cm are obtainable. Much of this loss can be attributed to mode leakage and volume scattering. Mode leakage is a function of the effective oxide thickness, and volume scattering related to the surface layer damage. These parameters have been shown to be controllable and so suggests that further reduction in the waveguide loss is feasible. Analysis of the layer growth mechanism by RBS, XTEM and XPS proves that SiO 2 is formed, and that the extent, of formation depends on implant dose and temperature. The excess carbon generated is believed to exit the oxide layer by a number of varying mechanisms. The result of this appears to be a number of stable Si-C-O intermediaries that, form regions to either depth extreme of the SiO 2 layer. Early furnace tests suggest a need to anneal at, temperatures approaching the melting point of the silicon substrate, and that the quality of the virgin material is crucial in controlling the resulting oxide growth. (author)

  20. Leachability of nitrided ilmenite in hydrochloric acid

    OpenAIRE

    Swanepoel, J.J.; van Vuuren, D.S.; Heydenrych, M.

    2011-01-01

    Titanium nitride in upgraded nitrided ilmenite (bulk of iron removed) can selectively be chlorinated to produce titanium tetrachloride. Except for iron, most other components present during this low temperature (ca. 200°C) chlorination reaction will not react with chlorine. It is therefore necessary to remove as much iron as possible from the nitrided ilmenite. Hydrochloric acid leaching is a possible process route to remove metallic iron from nitrided ilmenite without excessive dissolution o...

  1. "UCx fission targets oxidation test stand"

    CERN Document Server

    Lacroix, Rachel

    2014-01-01

    "Set up a rig dedicated to the oxidation of UCx and define a procedure for repeatable, reliable and safe method for converting UC2 fission targets into an acceptable uranium carbide oxide waste for subsequent disposal by the Swiss Authorities."

  2. Ligand sphere conversions in terminal carbide complexes

    DEFF Research Database (Denmark)

    Morsing, Thorbjørn Juul; Reinholdt, Anders; Sauer, Stephan P. A.

    2016-01-01

    Metathesis is introduced as a preparative route to terminal carbide complexes. The chloride ligands of the terminal carbide complex [RuC(Cl)2(PCy3)2] (RuC) can be exchanged, paving the way for a systematic variation of the ligand sphere. A series of substituted complexes, including the first...... example of a cationic terminal carbide complex, [RuC(Cl)(CH3CN)(PCy3)2]+, is described and characterized by NMR, MS, X-ray crystallography, and computational studies. The experimentally observed irregular variation of the carbide 13C chemical shift is shown to be accurately reproduced by DFT, which also...... demonstrates that details of the coordination geometry affect the carbide chemical shift equally as much as variations in the nature of the auxiliary ligands. Furthermore, the kinetics of formation of the sqaure pyramidal dicyano complex, trans-[RuC(CN)2(PCy3)2], from RuC has been examined and the reaction...

  3. Microsegregation in Nodular Cast Iron with Carbides

    Directory of Open Access Journals (Sweden)

    S. Pietrowski

    2012-12-01

    Full Text Available In this paper results of microsegregation in the newly developed nodular cast iron with carbides are presented. To investigate the pearlitic and bainitic cast iron with carbides obtained by Inmold method were chosen. The distribution of linear elements on the eutectic cell radius was examined. To investigate the microsegregation pearlitic and bainitic cast iron with carbides obtained by Inmold method were chosen.The linear distribution of elements on the eutectic cell radius was examined. Testing of the chemical composition of cast iron metal matrix components, including carbides were carried out. The change of graphitizing and anti-graphitizing element concentrations within eutectic cell was determined. It was found, that in cast iron containing Mo carbides crystallizing after austenite + graphite eutectic are Si enriched.

  4. Microsegregation in Nodular Cast Iron with Carbides

    Directory of Open Access Journals (Sweden)

    Pietrowski S.

    2012-12-01

    Full Text Available In this paper results of microsegregation in the newly developed nodular cast iron with carbides are presented. To investigate the pearlitic and bainitic cast iron with carbides obtained by Inmold method were chosen. The distribution of linear elements on the eutectic cell radius was examined. To investigate the microsegregation pearlitic and bainitic cast iron with carbides obtained by Inmold method were chosen. The linear distribution of elements on the eutectic cell radius was examined. Testing of the chemical composition of cast iron metal matrix components, including carbides were carried out. The change of graphitizing and anti-graphitizing element concentrations within eutectic cell was determined. It was found, that in cast iron containing Mo carbides crystallizing after austenite + graphite eutectic are Si enriched.

  5. Fabrication of vanadium nitride by carbothermal nitridation reaction

    International Nuclear Information System (INIS)

    Wang Xitang; Wang Zhuofu; Zhang Baoguo; Deng Chengji

    2005-01-01

    Vanadium nitride is produced from V 2 O 5 by carbon-thermal reduction and nitridation. When the sintered temperature is above 1273 K, VN can be formed, and the nitrogen content of the products increased with the firing temperature raised, and then is the largest when the sintered temperature is 1573 K. The C/V 2 O 5 mass ratio of the green samples is the other key factor affecting on the nitrogen contents of the products. The nitrogen content of the products reaches the most when the C/V 2 O 5 mass ratio is 0.33, which is the theoretical ratio of the carbothermal nitridation of V 2 O 5 . (orig.)

  6. Toxicity evaluation of boron nitride nanospheres and water-soluble boron nitride in Caenorhabditis elegans

    Directory of Open Access Journals (Sweden)

    Wang N

    2017-08-01

    Full Text Available Ning Wang,1 Hui Wang,2 Chengchun Tang,3 Shijun Lei,1 Wanqing Shen,1 Cong Wang,1 Guobin Wang,4 Zheng Wang,1,4 Lin Wang1,5 1Research Center for Tissue Engineering and Regenerative Medicine, Union Hospital, 2Department of Medical Genetics, Tongji Medical College, Huazhong University of Science and Technology, Wuhan, 3Boron Nitride Research Center, School of Materials Science and Engineering, Hebei University of Technology, Tianjin, 4Department of Gastrointestinal Surgery, 5Department of Clinical Laboratory, Union Hospital, Tongji Medical College, Huazhong University of Science and Technology, Wuhan, China Abstract: Boron nitride (BN nanomaterials have been increasingly explored for potential biological applications. However, their toxicity remains poorly understood. Using Caenorhabditis elegans as a whole-animal model for toxicity analysis of two representative types of BN nanomaterials – BN nanospheres (BNNSs and highly water-soluble BN nanomaterial (named BN-800-2 – we found that BNNSs overall toxicity was less than soluble BN-800-2 with irregular shapes. The concentration thresholds for BNNSs and BN-800-2 were 100 µg·mL-1 and 10 µg·mL-1, respectively. Above this concentration, both delayed growth, decreased life span, reduced progeny, retarded locomotion behavior, and changed the expression of phenotype-related genes to various extents. BNNSs and BN-800-2 increased oxidative stress levels in C. elegans by promoting reactive oxygen species production. Our results further showed that oxidative stress response and MAPK signaling-related genes, such as GAS1, SOD2, SOD3, MEK1, and PMK1, might be key factors for reactive oxygen species production and toxic responses to BNNSs and BN-800-2 exposure. Together, our results suggest that when concentrations are lower than 10 µg·mL-1, BNNSs are more biocompatible than BN-800-2 and are potentially biocompatible material. Keywords: boron nitride nanomaterials, Caenorhabditis elegans, nanotoxicology

  7. Microstructural evolution during nitriding, finite element simulation and experimental assessment

    Energy Technology Data Exchange (ETDEWEB)

    Hassani-Gangaraj, S.M. [Politecnico di Milano, Dipartimento di Meccanica, Via La Masa, 1, 20156 Milano (Italy); Guagliano, M., E-mail: mario.guagliano@polimi.it [Politecnico di Milano, Dipartimento di Meccanica, Via La Masa, 1, 20156 Milano (Italy)

    2013-04-15

    A finite element simulation of nitriding is proposed in this paper, using the analogy between diffusion and heat conduction, to overcome the shortcomings of the classical internal oxidation model in predicting the kinetics of layer growth and nitrogen distribution during nitriding. To verify the model, a typical gas nitriding has been carried out on an axisymmetric specimen. Treated specimen has been characterized using optical microscopy (OM), scanning electron microscopy (SEM), micro-hardness and X-Ray diffraction (XRD) measurements. It was found that the so-called diffusion zone can be divided into two parts with different influence on the mechanical characteristics including residual stress and hardening. First layer which is a two phase region of ferritic matrix and γ′ (Fe{sub 4}N) makes further improvement with respect to the second layer which is a solid solution of nitrogen in ferrite. The formation of that two phase region, which is not predicted by classical model, can be efficiently recognized by the proposed model. It is also proved that the model has the ability to consider the geometry dependency of layer growth and formation in nitriding.

  8. Formation of zirconium nitride via mechanochemical decomposition of zircon

    International Nuclear Information System (INIS)

    Puclin, T.; Kaczmarek, W.A.

    1996-01-01

    In this paper we report some results of the mechanochemical reduction of zircon, and for the first time subsequent reaction with nitrogen to form zirconium nitride (ZrN). This process can be described by the equation: 3ZrSiO 4 + 8Al + 1.5N 2 = 4Al 2 O 3 + 3ZrN + 3Si. Milling was carried out in three steps: 1) low speed grinding of Al+ZrSiO 4 in vacuum, 2) high speed milling to effect the reduction, and 3) continued milling after the addition of nitrogen. Powders produced were examined by X-ray diffraction. The first step showed no reaction occurred during low speed grinding. The second step proved to be a slow reaction without the 'ignition' often seen in other mechanochemical reduction works. The final step was also gradual, and did not always go to full nitridation over the duration of the experiment, giving a product of composition ZrN 0.6 to ZrN l.0 . This is quite acceptable as transition metal nitrides are often non-stoichiometric. These results show that the formation of a useful hard material such as ZrN can be formed from a raw mineral by two stage mechanochemical processing. Further investigations are currently being undertaken to eliminate Fe contamination and produce pure ceramic oxide-nitride composites

  9. Effects of silicon carbide on the phase developments in mullite-carbon ceramic composite

    Directory of Open Access Journals (Sweden)

    Fatai Olufemi ARAMIDE

    2017-12-01

    Full Text Available The effects of the addition of silicon carbide and sintering temperatures on the phases developed, in sintered ceramic composite produced from kaolin and graphite was investigated. The kaolin and graphite of known mineralogical composition were thoroughly blended with 4 and 8 vol % silicon carbide. From the homogeneous mixture of kaolin, graphite and silicon carbide, standard samples were prepared via uniaxial compaction. The test samples produced were subjected to firing (sintering at 1300°C, 1400°C and 1500°C. The sintered samples were characterized for the developed phases using x‐ray diffractometry analysis, microstructural morphology using ultra‐high resolution field emission scanning electron microscope (UHRFEGSEM. It was observed that microstructural morphology of the samples revealed the evolution of mullite, cristobalite and microcline. The kaolinite content of the raw kaolin undergoes transformation into mullite and excess silica, the mullite and the silica phases contents increased with increased sintering temperature. It is also generally observed that the graphite content progressively reduced linearly with increased sintering temperature. It is concluded that silicon carbide acts as anti-oxidant for the graphite, this anti-oxidant effect was more effective at 4 vol % silicon carbide.

  10. Nitride passivation of the interface between high-k dielectrics and SiGe

    Energy Technology Data Exchange (ETDEWEB)

    Sardashti, Kasra [Department of Chemistry and Biochemistry, University of California, San Diego, La Jolla, California 92093-0358 (United States); Materials Science and Engineering Program, University of California, San Diego, La Jolla, California 92093-0411 (United States); Hu, Kai-Ting [Department of Chemistry and Biochemistry, University of California, San Diego, La Jolla, California 92093-0358 (United States); Department of Mechanical and Aerospace Engineering, University of California, San Diego, La Jolla, California 92093-0411 (United States); Tang, Kechao; McIntyre, Paul [Department of Materials Science and Engineering, Stanford University, Stanford, California 94305 (United States); Madisetti, Shailesh; Oktyabrsky, Serge [Colleges of Nanoscale Science and Engineering, SUNY Polytechnic Institute, Albany, New York 12222 (United States); Siddiqui, Shariq; Sahu, Bhagawan [TD Research, GLOBALFOUNDRIES US, Inc., Albany, New York 12203 (United States); Yoshida, Naomi; Kachian, Jessica; Dong, Lin [Applied Materials, Inc., Santa Clara, California 95054 (United States); Fruhberger, Bernd [California Institute for Telecommunications and Information Technology, University of California San Diego, La Jolla, California 92093-0436 (United States); Kummel, Andrew C., E-mail: akummel@ucsd.edu [Department of Chemistry and Biochemistry, University of California, San Diego, La Jolla, California 92093-0358 (United States)

    2016-01-04

    In-situ direct ammonia (NH{sub 3}) plasma nitridation has been used to passivate the Al{sub 2}O{sub 3}/SiGe interfaces with Si nitride and oxynitride. X-ray photoelectron spectroscopy of the buried Al{sub 2}O{sub 3}/SiGe interface shows that NH{sub 3} plasma pre-treatment should be performed at high temperatures (300 °C) to fully prevent Ge nitride and oxynitride formation at the interface and Ge out-diffusion into the oxide. C-V and I-V spectroscopy results show a lower density of interface traps and smaller gate leakage for samples with plasma nitridation at 300 °C.

  11. The effect of coverplates on the dwell characteristics of silican carbide subject to KE impact

    NARCIS (Netherlands)

    Pickup, I.M.; Barker, A.K.; Elgy, I.D.; Peskes, G.J.J.M.; Voorde, M.J. van der

    2004-01-01

    The high ballistic efficiency of non-oxide ceramics such as silicon carbide against kinetic energy (KE) threats is largely due to penetrator dwell (the erosion of the tip of the rod prior to ceramic target penetration). This paper considers the effect of target surface conditions on the dwell

  12. Effect of post-deposition implantation and annealing on the properties of PECVD deposited silicon nitride films

    International Nuclear Information System (INIS)

    Shams, Q.A.

    1988-01-01

    Recently it has been shown that memory-quality silicon nitride can be deposited using plasma enhanced chemical vapor deposition (PECVD). Nitrogen implantation and post-deposition annealing resulted in improved memory properties of MNOS devices. The primary objective of the work described here is the continuation of the above work. Silicon nitride films were deposited using argon as the carrier gas and evaluated in terms of memory performance as the charge-trapping layer in the metal-nitride-oxide-silicon (MNOS) capacitor structure. The bonding structure of PECVD silicon nitride was modified by annealing in different ambients at temperatures higher than the deposition temperature. Post-deposition ion implantation was used to introduce argon into the films in an attempt to influence the transfer, trapping, and emission of charge during write/erase exercising of the MNOS devices. Results show that the memory performance of PECVD silicon nitride is sensitive to the deposition parameters and post-deposition processing

  13. Failure analysis of carbide fuels under transient overpower (TOP) conditions

    International Nuclear Information System (INIS)

    Nguyen, D.H.

    1980-06-01

    The failure of carbide fuels in the Fast Test Reactor (FTR) under Transient Overpower (TOP) conditions has been examined. The Beginning-of-Cycle Four (BOC-4) all-oxide base case, at $.50/sec ramp rate was selected as the reference case. A coupling between the advanced fuel performance code UNCLE-T and HCDA Code MELT-IIIA was necessary for the analysis. UNCLE-T was used to determine cladding failure and fuel preconditioning which served as initial conditions for MELT-III calculations. MELT-IIIA determined the time of molten fuel ejection from fuel pin

  14. EDITORIAL: Non-polar and semipolar nitride semiconductors Non-polar and semipolar nitride semiconductors

    Science.gov (United States)

    Han, Jung; Kneissl, Michael

    2012-02-01

    topics including growth and heteroepitaxy, bulk GaN substrates, theory and modelling, optical properties, laser diodes and LEDs as well as transport properties and electronics. Farrell et al review materials and growth issues for high-performance non- and semipolar light-emitting devices, and Scholz provides an overview of heteroepitaxial growth of semipolar GaN. Okada et al review growth mechanisms of non- and semipolar GaN layers on patterned sapphire substrates, and Vennéguès discusses defect reduction methods for heteroepitaxially grown non- and semipolar III-nitride films. Leung et al explain how kinetic Wulff plots can be used to design and control non-polar and semipolar GaN heteroepitaxy, and a contribution by Sawaki et al explores the impurity incorporation in (1-101) GaN grown on Si substrates. In the area of bulk crystal growth Kucharski et al review non- and semipolar GaN substrates by ammonothermal growth, and Chichibu et al discuss the challenges for epitaxial growth of InGaN on free-standing m-plane GaN substrates. Calculation of semipolar orientations for wurtzitic semiconductor heterostructures and their application to nitrides and oxides are reviewed by Bigenwald et al, and Ito et al present an ab initio approach to reconstruction, adsorption, and incorporation on GaN surfaces. Finally, the theoretical description of non-polar and semipolar nitride semiconductor quantum-well structures is presented by Ahn et al. In a discussion of the optical properties, Kisin et al discuss the effect of the quantum well population on the optical characteristics of polar, semipolar and non-polar III-nitride light emitters, and Jönen et al investigate the indium incorporation and optical properties of non- and semipolar GaInN QW structures. Wernicke et al explore the emission wavelength of polar, non-polar, and semipolar InGaN quantum wells and the incorporation of indium. In a contribution by Melo et al, the gain in polar and non-polar/semipolar gallium-nitride

  15. Simulation of the Nitriding Process

    Science.gov (United States)

    Krukovich, M. G.

    2004-01-01

    Simulation of the nitriding process makes it possible to solve many practical problems of process control, prediction of results, and development of new treatment modes and treated materials. The presented classification systematizes nitriding processes and processes based on nitriding, enables consideration of the theory and practice of an individual process in interrelation with other phenomena, outlines ways for intensification of various process variants, and gives grounds for development of recommendations for controlling the structure and properties of the obtained layers. The general rules for conducting the process and formation of phases in the layer and properties of the treated surfaces are used to create a prediction computational model based on analytical, numerical, and empirical approaches.

  16. Boron Nitride Nanotube: Synthesis and Applications

    Science.gov (United States)

    Tiano, Amanda L.; Park, Cheol; Lee, Joseph W.; Luong, Hoa H.; Gibbons, Luke J.; Chu, Sang-Hyon; Applin, Samantha I.; Gnoffo, Peter; Lowther, Sharon; Kim, Hyun Jung; hide

    2014-01-01

    Scientists have predicted that carbon's immediate neighbors on the periodic chart, boron and nitrogen, may also form perfect nanotubes, since the advent of carbon nanotubes (CNTs) in 1991. First proposed then synthesized by researchers at UC Berkeley in the mid 1990's, the boron nitride nanotube (BNNT) has proven very difficult to make until now. Herein we provide an update on a catalyst-free method for synthesizing highly crystalline, small diameter BNNTs with a high aspect ratio using a high power laser under a high pressure and high temperature environment first discovered jointly by NASA/NIA JSA. Progress in purification methods, dispersion studies, BNNT mat and composite formation, and modeling and diagnostics will also be presented. The white BNNTs offer extraordinary properties including neutron radiation shielding, piezoelectricity, thermal oxidative stability (> 800 C in air), mechanical strength, and toughness. The characteristics of the novel BNNTs and BNNT polymer composites and their potential applications are discussed.

  17. Effective optimization of surface passivation on porous silicon carbide using atomic layer deposited Al2O3

    DEFF Research Database (Denmark)

    Lu, Weifang; Iwasa, Yoshimi; Ou, Yiyu

    2017-01-01

    Porous silicon carbide (B–N co-doped SiC) produced by anodic oxidation showed strong photoluminescence (PL) at around 520 nm excited by a 375 nm laser. The porous SiC samples were passivated by atomic layer deposited (ALD) aluminum oxide (Al2O3) films, resulting in a significant enhancement...

  18. Plasma metallization of refractory carbide powders

    International Nuclear Information System (INIS)

    Koroleva, E.B.; Klinskaya, N.A.; Rybalko, O.F.; Ugol'nikova, T.A.

    1986-01-01

    The effect of treatment conditions in plasma on properties of produced metallized powders of titanium, tungsten and chromium carbides with the main particle size of 40-80 μm is considered. It is shown that plasma treatment permits to produce metallized powders of carbide materials with the 40-80 μm particle size. The degree of metallization, spheroidization, chemical and phase composition of metallized carbide powders are controlled by dispersivity of the treated material, concentration of a metal component in the treated mixtures, rate of plasma flow and preliminary spheroidization procedure

  19. Fabrication of mesoporous and high specific surface area lanthanum carbide-carbon nanotube composites

    International Nuclear Information System (INIS)

    Biasetto, L.; Carturan, S.; Maggioni, G.; Zanonato, P.; Bernardo, P. Di; Colombo, P.; Andrighetto, A.; Prete, G.

    2009-01-01

    Mesoporous lanthanum carbide-carbon nanotube composites were produced by means of carbothermal reaction of lanthanum oxide, graphite and multi-walled carbon nanotube mixtures under high vacuum. Residual gas analysis revealed the higher reactivity of lanthanum oxide towards carbon nanotubes compared to graphite. After sintering, the composites revealed a specific surface area increasing with the amount of carbon nanotubes introduced. The meso-porosity of carbon nanotubes was maintained after thermal treatment.

  20. Development of new ferritic alloys reinforced by nano titanium nitrides

    International Nuclear Information System (INIS)

    Mathon, M.H.; Perrut, M.; Poirier, L.; Ratti, M.; Hervé, N.; Carlan, Y. de

    2015-01-01

    Nano-reinforced steels are considered for future nuclear reactors or for application at high temperature like the heat exchangers tubes or plates. Oxide Dispersion Strengthened (ODS) alloys are the most known of the nano-reinforced alloys. They exhibit high creep strength as well as high resistance to radiation damage. This article deals with the development of new nano reinforced alloys called Nitride Dispersed Strengthened (NDS). Those are also considered for nuclear applications and could exhibit higher ductility with a simplest fabrication way. Two main fabrication routes were studied: the co-milling of Fe–18Cr1W0.008N and TiH 2 powders and the plasma nitration at low temperature of a Fe–18Cr1W0.8Ti powder. The materials were studied mainly by Small Angle Neutron Scattering. The feasibility of the reinforcement by nano-nitride particles is demonstrated. The final size of the nitrides can be similar (few nanometers) to the nano-oxides observed in ODS alloys. The mechanical properties of the new NDS show an amazing ductility at high temperature for a nano-reinforced alloy

  1. Development of new ferritic alloys reinforced by nano titanium nitrides

    Energy Technology Data Exchange (ETDEWEB)

    Mathon, M.H., E-mail: marie-helene.mathon@cea.fr [Laboratoire Léon Brillouin, CEA-CNRS, CEA/Saclay, 91191 Gif-sur-Yvette (France); Perrut, M., E-mail: mikael.perrut@onera.fr [Laboratoire Léon Brillouin, CEA-CNRS, CEA/Saclay, 91191 Gif-sur-Yvette (France); Poirier, L., E-mail: poirier@nitruvid.com [Bodycote France and Belgium, 9 r Jean Poulmarch, 95100 Argenteuil (France); Ratti, M., E-mail: mathieu.ratti@snecma.fr [CEA, DEN, Service de Recherches Métallurgiques Appliquées, F91191 Gif-sur-Yvette (France); Hervé, N., E-mail: nicolas.herve@cea.fr [CEA, DRT, LITEN, F38054 Grenoble (France); Carlan, Y. de, E-mail: yann.decarlan@cea.fr [CEA, DEN, Service de Recherches Métallurgiques Appliquées, F91191 Gif-sur-Yvette (France)

    2015-01-15

    Nano-reinforced steels are considered for future nuclear reactors or for application at high temperature like the heat exchangers tubes or plates. Oxide Dispersion Strengthened (ODS) alloys are the most known of the nano-reinforced alloys. They exhibit high creep strength as well as high resistance to radiation damage. This article deals with the development of new nano reinforced alloys called Nitride Dispersed Strengthened (NDS). Those are also considered for nuclear applications and could exhibit higher ductility with a simplest fabrication way. Two main fabrication routes were studied: the co-milling of Fe–18Cr1W0.008N and TiH{sub 2} powders and the plasma nitration at low temperature of a Fe–18Cr1W0.8Ti powder. The materials were studied mainly by Small Angle Neutron Scattering. The feasibility of the reinforcement by nano-nitride particles is demonstrated. The final size of the nitrides can be similar (few nanometers) to the nano-oxides observed in ODS alloys. The mechanical properties of the new NDS show an amazing ductility at high temperature for a nano-reinforced alloy.

  2. The determination of boron and carbon in reactor grade boron carbide

    International Nuclear Information System (INIS)

    Crossley, D.; Wood, A.J.; McInnes, C.A.J.; Jones, I.G.

    1978-09-01

    The sealed tube method of dissolution at high temperature and pressure has been successfully applied in the analysis of reactor grade boron carbide for the determination of boron. A 50 mg sample of boron carbide is completely dissolved by heating with concentrated nitric acid in a sealed tube at 300 0 C. The boron content of the resultant sample solution is determined by the mannitol potentiometric titration method. The precision of the method for the determination of 2.5 mg of boron using the Harwell automatic potentiometric titrator is 0.2% (coefficient of variation). The carbon content of a boron carbide sample is determined by combustion of the sample at 1050 0 C in a stream of oxygen using vanadium pentoxide to ensure the complete oxidation of the sample. The carbon dioxide produced from the sample is measured manometrically and the precision of the method for the determination of 4 mg of carbon is 0.4% (coefficient of variation). (author)

  3. Some Thermodynamic Features of Uranium-Plutonium Nitride Fuel in the Course of Burnup

    Science.gov (United States)

    Rusinkevich, A. A.; Ivanov, A. S.; Belov, G. V.; Skupov, M. V.

    2017-12-01

    Calculation studies on the effect of carbon and oxygen impurities on the chemical and phase compositions of nitride uranium-plutonium fuel in the course of burnup are performed using the IVTANTHERMO code. It is shown that the number of moles of UN decreases with increasing burnup level, whereas UN1.466, UN1.54, and UN1.73 exhibit a considerable increase. The presence of oxygen and carbon impurities causes an increase in the content of the UN1.466, UN1.54 and UN1.73 phases in the initial fuel by several orders of magnitude, in particular, at a relatively low temperature. At the same time, the presence of impurities abruptly reduces the content of free uranium in unburned fuel. Plutonium in the considered system is contained in form of Pu, PuC, PuC2, Pu2C3, and PuN. Plutonium carbides, as well as uranium carbides, are formed in small amounts. Most of the plutonium remains in the form of nitride PuN, whereas unbound Pu is present only in the areas with a low burnup level and high temperatures.

  4. Vanadium carbide coatings: deposition process and properties

    International Nuclear Information System (INIS)

    Borisova, A.; Borisov, Y.; Shavlovsky, E.; Mits, I.; Castermans, L.; Jongbloed, R.

    2001-01-01

    Vanadium carbide coatings on carbon and alloyed steels were produced by the method of diffusion saturation from the borax melt. Thickness of the vanadium carbide layer was 5-15 μm, depending upon the steel grade and diffusion saturation parameters. Microhardness was 20000-28000 MPa and wear resistance of the coatings under conditions of end face friction without lubrication against a mating body of WC-2Co was 15-20 times as high as that of boride coatings. Vanadium carbide coatings can operate in air at a temperature of up to 400 o C. They improve fatigue strength of carbon steels and decrease the rate of corrosion in sea and fresh water and in acid solutions. The use of vanadium carbide coatings for hardening of various types of tools, including cutting tools, allows their service life to be extended by a factor of 3 to 30. (author)

  5. Morphologic and crystallographic studies on electrochemically formed chromium nitride films

    Energy Technology Data Exchange (ETDEWEB)

    Amezawa, Koji [Graduate School of Environmental Studies, Tohoku University, 6-6-01 Aramaki-Aoba, Aoba-ku, Sendai 980-8579 (Japan); Goto, Takuya; Tsujimura, Hiroyuki; Hagiwara, Rika; Tomii, Yoichi [Graduate School of Energy Science, Kyoto University, Sakyo-ku, Kyoto 606-8501 (Japan); Uchimoto, Yoshiharu [Graduate School of Human and Environmental Studies, Kyoto University, Sakyo-ku, Kyoto 606-8501 (Japan); Ito, Yasuhiko [Department of Environmental Systems Science, Faculty of Engineering, Doshisya University, Kyotanabe-shi, Kyoto 610-0321 (Japan)

    2007-11-20

    Chromium nitride films were prepared by anodically oxidizing nitride ions at 0.4-1.5 V versus Li{sup +}/Li on chromium substrates in molten LiCl-KCl-Li{sub 3}N systems at 723 K. A crystalline Cr{sub 2}N film was successfully prepared at 0.4-1.4 V, and was thicker at more positive electrolytic potential. At 1.5 V, a Cr-N film could be also obtained, but its growth rate was relatively low. The film prepared at 1.5 V consisted of two distinctive layers. The surface layer was amorphous Cr-N containing crystalline CrN particles, and the inner layer was crystalline CrN. It was considered the existence of the amorphous phase suppressed the film growth. (author)

  6. Stable carbides in transition metal alloys

    International Nuclear Information System (INIS)

    Piotrkowski, R.

    1991-01-01

    In the present work different techniques were employed for the identification of stable carbides in two sets of transition metal alloys of wide technological application: a set of three high alloy M2 type steels in which W and/or Mo were total or partially replaced by Nb, and a Zr-2.5 Nb alloy. The M2 steel is a high speed steel worldwide used and the Zr-2.5 Nb alloy is the base material for the pressure tubes in the CANDU type nuclear reactors. The stability of carbide was studied in the frame of Goldschmidt's theory of interstitial alloys. The identification of stable carbides in steels was performed by determining their metallic composition with an energy analyzer attached to the scanning electron microscope (SEM). By these means typical carbides of the M2 steel, MC and M 6 C, were found. Moreover, the spatial and size distribution of carbide particles were determined after different heat treatments, and both microstructure and microhardness were correlated with the appearance of the secondary hardening phenomenon. In the Zr-Nb alloy a study of the α and β phases present after different heat treatments was performed with optical and SEM metallographic techniques, with the guide of Abriata and Bolcich phase diagram. The α-β interphase boundaries were characterized as short circuits for diffusion with radiotracer techniques and applying Fisher-Bondy-Martin model. The precipitation of carbides was promoted by heat treatments that produced first the C diffusion into the samples at high temperatures (β phase), and then the precipitation of carbide particles at lower temperature (α phase or (α+β)) two phase field. The precipitated carbides were identified as (Zr, Nb)C 1-x with SEM, electron microprobe and X-ray diffraction techniques. (Author) [es

  7. Tungsten carbide nanoparticles as efficient cocatalysts for photocatalytic overall water splitting

    KAUST Repository

    Garcia Esparza, Angel T.

    2012-12-17

    Tungsten carbide exhibits platinum-like behavior, which makes it an interesting potential substitute for noble metals in catalytic applications. Tungsten carbide nanocrystals (≈5 nm) are directly synthesized through the reaction of tungsten precursors with mesoporous graphitic C3N 4 (mpg-C3N4) as the reactive template in a flow of inert gas at high temperatures. Systematic experiments that vary the precursor compositions and temperatures used in the synthesis selectively generate different compositions and structures for the final nanocarbide (W 2C or WC) products. Electrochemical measurements demonstrate that the WC phase with a high surface area exhibits both high activity and stability in hydrogen evolution over a wide pH range. The WC sample also shows excellent hydrogen oxidation activity, whereas its activity in oxygen reduction is poor. These tungsten carbides are successful cocatalysts for overall water splitting and give H2 and O2 in a stoichiometric ratio from H 2O decomposition when supported on a Na-doped SrTiO3 photocatalyst. Herein, we present tungsten carbide (on a small scale) as a promising and durable catalyst substitute for platinum and other scarce noble-metal catalysts in catalytic reaction systems used for renewable energy generation. Platinum replacement: The phase-controlled synthesis of tungsten carbide nanoparticles from the nanoconfinement of a mesoporous graphite C 3N4 (mpg-C3N4) reactive template is shown. The nanomaterials catalyze hydrogen evolution/oxidation reactions, but are inactive in the oxygen reduction reaction. Tungsten carbide is an effective cocatalyst for photocatalytic overall water splitting (see picture). Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  8. Tungsten carbide nanoparticles as efficient cocatalysts for photocatalytic overall water splitting

    KAUST Repository

    Garcia Esparza, Angel T.; Cha, Dong Kyu; Ou, Yiwei; Kubota, Jun; Domen, Kazunari; Takanabe, Kazuhiro

    2012-01-01

    Tungsten carbide exhibits platinum-like behavior, which makes it an interesting potential substitute for noble metals in catalytic applications. Tungsten carbide nanocrystals (≈5 nm) are directly synthesized through the reaction of tungsten precursors with mesoporous graphitic C3N 4 (mpg-C3N4) as the reactive template in a flow of inert gas at high temperatures. Systematic experiments that vary the precursor compositions and temperatures used in the synthesis selectively generate different compositions and structures for the final nanocarbide (W 2C or WC) products. Electrochemical measurements demonstrate that the WC phase with a high surface area exhibits both high activity and stability in hydrogen evolution over a wide pH range. The WC sample also shows excellent hydrogen oxidation activity, whereas its activity in oxygen reduction is poor. These tungsten carbides are successful cocatalysts for overall water splitting and give H2 and O2 in a stoichiometric ratio from H 2O decomposition when supported on a Na-doped SrTiO3 photocatalyst. Herein, we present tungsten carbide (on a small scale) as a promising and durable catalyst substitute for platinum and other scarce noble-metal catalysts in catalytic reaction systems used for renewable energy generation. Platinum replacement: The phase-controlled synthesis of tungsten carbide nanoparticles from the nanoconfinement of a mesoporous graphite C 3N4 (mpg-C3N4) reactive template is shown. The nanomaterials catalyze hydrogen evolution/oxidation reactions, but are inactive in the oxygen reduction reaction. Tungsten carbide is an effective cocatalyst for photocatalytic overall water splitting (see picture). Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  9. Wear behaviour of nitrogen-implanted and nitrided Ti-6Al-4V alloy

    International Nuclear Information System (INIS)

    Martinella, R.; Giovanardi, S.; Chevallard, G.; Villani, M.; Molinari, A.; Tosello, C.

    1985-01-01

    The comparison between the wear behaviour of nitrogen-implanted Ti-6Al-4V alloy and that of nitrided Ti-6Al-4V alloy is reported. Both treatments were carried out at temperatures from 573 to 973 K on lapped surfaces; in order to compare roughness effects, nitriding was also carried out on rougher samples. An improvement in wear resistance for lapped surfaces was noted after implantation at 573 K or higher temperatures and after nitriding at temperatures over 773 K only; however, at 873 K, nitriding was more effective than implantation. Rough nitrided surfaces showed better wear resistance than lapped nitrided surfaces or lapped implanted surfaces. Most probably the improvement in wear resistance on implanted samples is due to a reduction in friction induced by chemical modification of the surface as a result of oxide and TiN. Scanning electron microscopy observations which show subsurface voids and coalescence are in good agreement with a wear model previously reported. As implantation preserves the surface finish, a possible application is suggested. (Auth.)

  10. Point defects and transport properties in carbides

    International Nuclear Information System (INIS)

    Matzke, Hj.

    1984-01-01

    Carbides of transition metals and of actinides are interesting and technologically important. The transition-metal carbides (or carbonitrides) are extensively being used as hard materials and some of them are of great interest because of the high transition temperature for superconductivity, e.g. 17 K for Nb(C,N). Actinide carbides and carbonitrides, (U,Pu)C and (U,Pu)(C,N) are being considered as promising advanced fuels for liquid metal cooled fast breeder nuclear reactors. Basic interest exists in all these materials because of their high melting points (e.g. 4250 K for TaC) and the unusually broad range of homogeneity of nonstoichiometric compositions (e.g. from UCsub(0.9) to UCsub(1.9) at 2500 K). Interaction of point defects to clusters and short-range ordering have recently been studied with elastic neutron diffraction and diffuse scattering techniques, and calculations of energies of formation and interaction of point defects became available for selected carbides. Diffusion measurements also exist for a number of carbides, in particular for the actinide carbides. The existing knowledge is discussed and summarized with emphasis on informative examples of particular technological relevance. (Auth.)

  11. Neutronic analysis concerning the utilization of mixed U N-Pu N nitride fuel for fast reactors

    International Nuclear Information System (INIS)

    Renke, C.A.C.; Batista, J.L.; Waintraub, M.; Santos Bastos, W. dos; Brito Aghina, L.O. de.

    1991-08-01

    Neutronic behavior of mixed UN-PuN nitride fuel in substitution of the mixed oxide U O 2 - Pu O 2 for fast reactors is discussed with focus on Super Phenix I. Characteristics parameters of both cores are calculated and compared and the results presented show a great advantage for the nitride fuel, pointing out a larger performance of fuel elements in the core and an effective reduction of reactivity loss during the cycle. (author)

  12. Capacitive performance of molybdenum nitride/titanium nitride nanotube array for supercapacitor

    Energy Technology Data Exchange (ETDEWEB)

    Xie, Yibing, E-mail: ybxie@seu.edu.cn; Tian, Fang

    2017-01-15

    Highlights: • MoN{sub x}/TiN NTA is fully converted from MoO{sub 2}/TiO{sub 2} NTA by one-step nitridation process. • MoN{sub x}/TiN NTA is used as feasible electrode material of high-performance supercapacitor. • MoN{sub x}/TiN NTA shows high capacitance, rate capability and cycling stability. - Abstract: Molybdenum nitride (MoN{sub x}) depositing on titanium nitride nanotube array (TiN NTA) was designed as MoN{sub x}/TiN NTA for supercapacitor electrode material. MoN{sub x}/TiN NTA was fabricated by electrodepositing molybdenum oxide onto titanium dioxide NTA and one-step nitridation treatment in ammonia. MoN{sub x}/TiN NTA involved top-surface layer of MoN{sub x} nanoparticles and underlying layer of TiN NTA, which contributed to electric double layer capacitance in aqueous lithium-ion electrolyte solution. The specific capacitance was increased from 69.05 mF cm{sup −2} for TiN NTA to 121.50 mF cm{sup −2} for MoN{sub x}/TiN NTA at 0.3 mA cm{sup −2}, presenting the improved capacitance performance. MoN{sub x} exhibited the capacitance of 174.83 F g{sup −1} at 1.5 A g{sup −1} and slightly declined to 109.13 F g{sup −1} at 30 A g{sup −1}, presenting high rate capability. MoN{sub x}/TiN NTA exhibited the capacitance retention ratio of 93.8% at 3.0 mA cm{sup −2} after 1000 cycles, presenting high cycling stability. MoN{sub x}/TiN NTA could act as a promising electrode material of supercapacitor.

  13. Theoretical study of nitride short period superlattices

    Science.gov (United States)

    Gorczyca, I.; Suski, T.; Christensen, N. E.; Svane, A.

    2018-02-01

    Discussion of band gap behavior based on first principles calculations of electronic band structures for various short period nitride superlattices is presented. Binary superlattices, as InN/GaN and GaN/AlN as well as superlattices containing alloys, as InGaN/GaN, GaN/AlGaN, and GaN/InAlN are considered. Taking into account different crystallographic directions of growth (polar, semipolar and nonpolar) and different strain conditions (free-standing and pseudomorphic) all the factors influencing the band gap engineering are analyzed. Dependence on internal strain and lattice geometry is considered, but the main attention is devoted to the influence of the internal electric field and the hybridization of well and barrier wave functions. The contributions of these two important factors to band gap behavior are illustrated and estimated quantitatively. It appears that there are two interesting ranges of layer thicknesses; in one (few atomic monolayers in barriers and wells) the influence of the wave function hybridization is dominant, whereas in the other (layers thicker than roughly five to six monolayers) dependence of electric field on the band gaps is more important. The band gap behavior in superlattices is compared with the band gap dependence on composition in the corresponding ternary and quaternary alloys. It is shown that for superlattices it is possible to exceed by far the range of band gap values, which can be realized in ternary alloys. The calculated values of the band gaps are compared with the photoluminescence emission energies, when the corresponding data are available. Finally, similarities and differences between nitride and oxide polar superlattices are pointed out by comparison of wurtzite GaN/AlN and ZnO/MgO.

  14. Plasma spraying of zirconium carbide – hafnium carbide – tungsten cermets

    Czech Academy of Sciences Publication Activity Database

    Brožek, Vlastimil; Ctibor, Pavel; Cheong, D.-I.; Yang, S.-H.

    2009-01-01

    Roč. 9, č. 1 (2009), s. 49-64 ISSN 1335-8987 Institutional research plan: CEZ:AV0Z20430508 Keywords : Plasma spraying * cermet coatings * microhardness * zirconium carbide * hafnium carbide * tungsten * water stabilized plasma Subject RIV: JH - Ceramics, Fire-Resistant Materials and Glass

  15. Solid state alloying by plasma nitriding and diffusion annealing treatment for austenitic stainless steel

    International Nuclear Information System (INIS)

    Pinedo, C.E.; Vatavuk, J.; Oliveira, S.D. de; Tschiptschin, A.P.

    1999-01-01

    Nitrogen has been added to stainless steels to improve mechanical strength and corrosion resistance. High nitrogen steel production is limited by high gas pressure requirements and low nitrogen solubility in the melt. One way to overcome this limitation is the addition of nitrogen in solid state because of its higher solubility in austenite. However, gas and salt bath nitriding have been done at temperatures around 550 C, where nitrogen solubility in the steel is still very low. High temperature nitriding has been, thus proposed to increase nitrogen contents in the steel but the presence of oxide layers on top of the steel is a barrier to nitrogen intake. In this paper a modified plasma nitriding process is proposed. The first step of this process is a hydrogen plasma sputtering for oxide removal, exposing active steel surface improving nitrogen pickup. This is followed by a nitriding step where high nitrogen contents are introduced in the outermost layer of the steel. Diffusion annealing is then performed in order to allow nitrogen diffusion into the core. AISI 316 austenitic stainless steel was plasma nitrided and diffusion annealed at 1423K, for 6 hours, with 0.2 MPa nitrogen pressure. The nitrided steel presented ∝60 μm outermost compact layer of (Fe,Cr) 3 N and (Fe,Cr) 4 N with 11 wt.% N measured by surface depth profiling chemical analysis - GDS system. During the annealing treatment the nitride layer was dissolved and nitrogen diffused to the core of the sample leaving more even nitrogen distribution into the steel. Using this technique one-millimetre thick sample were obtained having high nitrogen content and uniform distribution through the thickness. (orig.)

  16. Ion nitridation - physical and technological aspects

    International Nuclear Information System (INIS)

    Elbern, A.W.

    1980-01-01

    Ion nitridation, is a technique which allows the formation of a controlled thickness of nitrides in the surface of the material, using this material as the cathode in a low pressure glow discharge, which presents many advantages over the conventional method. A brief review of the ion nitriding technique, the physical fenomena involved, and we discuss technological aspects of this method, are presented. (Author) [pt

  17. Silicon nitride-fabrication, forming and properties

    International Nuclear Information System (INIS)

    Yehezkel, O.

    1983-01-01

    This article, which is a literature survey of the recent years, includes description of several methods for the formation of silicone nitride, and five methods of forming: Reaction-bonded silicon nitride, sintering, hot pressing, hot isostatic pressing and chemical vapour deposition. Herein are also included data about mechanical and physical properties of silicon nitride and the relationship between the forming method and the properties. (author)

  18. High temperature evaporation of titanium, zirconium and hafnium carbides

    International Nuclear Information System (INIS)

    Gusev, A.I.; Rempel', A.A.

    1991-01-01

    Evaporation of cubic nonstoichiometric carbides of titanium, zirconium and hafnium in a comparatively low-temperature interval (1800-2700) with detailed crystallochemical sample certification is studied. Titanium carbide is characterized by the maximum evaporation rate: at T>2300 K it loses 3% of sample mass during an hour and at T>2400 K titanium carbide evaporation becomes extremely rapid. Zirconium and hafnium carbide evaporation rates are several times lower than titanium carbide evaporation rates at similar temperatures. Partial pressures of metals and carbon over the carbides studied are calculated on the base of evaporation rates

  19. Isolation and characterization of a uranium(VI)-nitride triple bond

    Science.gov (United States)

    King, David M.; Tuna, Floriana; McInnes, Eric J. L.; McMaster, Jonathan; Lewis, William; Blake, Alexander J.; Liddle, Stephen T.

    2013-06-01

    The nature and extent of covalency in uranium bonding is still unclear compared with that of transition metals, and there is great interest in studying uranium-ligand multiple bonds. Although U=O and U=NR double bonds (where R is an alkyl group) are well-known analogues to transition-metal oxo and imido complexes, the uranium(VI)-nitride triple bond has long remained a synthetic target in actinide chemistry. Here, we report the preparation of a uranium(VI)-nitride triple bond. We highlight the importance of (1) ancillary ligand design, (2) employing mild redox reactions instead of harsh photochemical methods that decompose transiently formed uranium(VI) nitrides, (3) an electrostatically stabilizing sodium ion during nitride installation, (4) selecting the right sodium sequestering reagent, (5) inner versus outer sphere oxidation and (6) stability with respect to the uranium oxidation state. Computational analyses suggest covalent contributions to U≡N triple bonds that are surprisingly comparable to those of their group 6 transition-metal nitride counterparts.

  20. Preparation of mesoporous carbon nitride structure by the dealloying of Ni/a-CN nanocomposite films

    Science.gov (United States)

    Zhou, Han; Shen, Yongqing; Huang, Jie; Liao, Bin; Wu, Xianying; Zhang, Xu

    2018-05-01

    The preparation of mesoporous carbon nitride (p-CN) structure by the selective dealloying process of Ni/a-CN nanocomposite films is investigated. The composition and structure of the Ni/a-CN nanocomposite films and porous carbon nitride (p-CN) films are determined by scan electron microscopy (SEM), transmission electron microscopy (TEM), X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS) and Raman spectroscopy. Phase separated structure including nickel carbide phase and the surrounding amorphous carbon nitride (a-CN) matrix are detected for the as-deposited films. Though the bulk diffusion is introduced in the film during the annealing process, the grain sizes for the post-annealed films are around 10 nm and change little comparing with the ones of the as-deposited films, which is associated with the thermostability of the CN surrounding in the film. The p-CN skeleton with its pore size around 12.5 nm is formed by etching the post-annealed films, indicative of the stability of the phase separated structure during the annealing process.

  1. Stress testing on silicon carbide electronic devices for prognostics and health management.

    Energy Technology Data Exchange (ETDEWEB)

    Kaplar, Robert James; Brock, Reinhard C.; Marinella, Matthew; King, Michael Patrick; Smith, Mark A.; Atcitty, Stanley

    2011-01-01

    Power conversion systems for energy storage and other distributed energy resource applications are among the drivers of the important role that power electronics plays in providing reliable electricity. Wide band gap semiconductors such as silicon carbide (SiC) and gallium nitride (GaN) will help increase the performance and efficiency of power electronic equipment while condition monitoring (CM) and prognostics and health management (PHM) will increase the operational availability of the equipment and thereby make it more cost effective. Voltage and/or temperature stress testing were performed on a number of SiC devices in order to accelerate failure modes and to identify measureable shifts in electrical characteristics which may provide early indication of those failures. Those shifts can be interpreted and modeled to provide prognostic signatures for use in CM and/or PHM. Such experiments will also lead to a deeper understanding of basic device physics and the degradation mechanisms behind failure.

  2. Microhardness and microplasticity of zirconium nitride

    International Nuclear Information System (INIS)

    Neshpor, V.S.; Eron'yan, M.A.; Petrov, A.N.; Kravchik, A.E.

    1978-01-01

    To experimentally check the concentration dependence of microhardness of 4 group nitrides, microhardness of zirconium nitride compact samples was measured. The samples were obtained either by bulk saturation of zirconium iodide plates or by chemical precipitation from gas. As nitrogen content decreased within the limits of homogeneity of zirconium nitride samples where the concentration of admixed oxygen was low, the microhardness grew from 1500+-100 kg/mm 2 for ZrNsub(1.0) to 27000+-100 kg/mm 2 for ZrNsub(0.78). Microplasticity of zirconium nitride (resistance to fracture) decreased, as the concentration of nitrogen vacancies was growing

  3. Sintered tantalum carbide coatings on graphite substrates: Highly reliable protective coatings for bulk and epitaxial growth

    International Nuclear Information System (INIS)

    Nakamura, Daisuke; Suzumura, Akitoshi; Shigetoh, Keisuke

    2015-01-01

    Highly reliable low-cost protective coatings have been sought after for use in crucibles and susceptors for bulk and epitaxial film growth processes involving wide bandgap materials. Here, we propose a production technique for ultra-thick (50–200 μmt) tantalum carbide (TaC) protective coatings on graphite substrates, which consists of TaC slurry application and subsequent sintering processes, i.e., a wet ceramic process. Structural analysis of the sintered TaC layers indicated that they have a dense granular structure containing coarse grain with sizes of 10–50 μm. Furthermore, no cracks or pinholes penetrated through the layers, i.e., the TaC layers are highly reliable protective coatings. The analysis also indicated that no plastic deformation occurred during the production process, and the non-textured crystalline orientation of the TaC layers is the origin of their high reliability and durability. The TaC-coated graphite crucibles were tested in an aluminum nitride (AlN) sublimation growth process, which involves extremely corrosive conditions, and demonstrated their practical reliability and durability in the AlN growth process as a TaC-coated graphite. The application of the TaC-coated graphite materials to crucibles and susceptors for use in bulk AlN single crystal growth, bulk silicon carbide (SiC) single crystal growth, chemical vapor deposition of epitaxial SiC films, and metal-organic vapor phase epitaxy of group-III nitrides will lead to further improvements in crystal quality and reduced processing costs

  4. Sintered tantalum carbide coatings on graphite substrates: Highly reliable protective coatings for bulk and epitaxial growth

    Energy Technology Data Exchange (ETDEWEB)

    Nakamura, Daisuke; Suzumura, Akitoshi; Shigetoh, Keisuke [Toyota Central R and D Labs., Inc., Nagakute, Aichi 480-1192 (Japan)

    2015-02-23

    Highly reliable low-cost protective coatings have been sought after for use in crucibles and susceptors for bulk and epitaxial film growth processes involving wide bandgap materials. Here, we propose a production technique for ultra-thick (50–200 μmt) tantalum carbide (TaC) protective coatings on graphite substrates, which consists of TaC slurry application and subsequent sintering processes, i.e., a wet ceramic process. Structural analysis of the sintered TaC layers indicated that they have a dense granular structure containing coarse grain with sizes of 10–50 μm. Furthermore, no cracks or pinholes penetrated through the layers, i.e., the TaC layers are highly reliable protective coatings. The analysis also indicated that no plastic deformation occurred during the production process, and the non-textured crystalline orientation of the TaC layers is the origin of their high reliability and durability. The TaC-coated graphite crucibles were tested in an aluminum nitride (AlN) sublimation growth process, which involves extremely corrosive conditions, and demonstrated their practical reliability and durability in the AlN growth process as a TaC-coated graphite. The application of the TaC-coated graphite materials to crucibles and susceptors for use in bulk AlN single crystal growth, bulk silicon carbide (SiC) single crystal growth, chemical vapor deposition of epitaxial SiC films, and metal-organic vapor phase epitaxy of group-III nitrides will lead to further improvements in crystal quality and reduced processing costs.

  5. Use of cermet thin film resistors with nitride passivated metal insulator field effect transistor

    Science.gov (United States)

    Brown, G. A.; Harrap, V.

    1971-01-01

    Film deposition of cermet resistors on same chip with metal nitride oxide silicon field effect transistors permits protection of contamination sensitive active devices from contaminants produced in cermet deposition and definition processes. Additional advantages include lower cost, greater reliability, and space savings.

  6. Optimization of nitridation conditions for high quality inter-polysilicon dielectric layers

    NARCIS (Netherlands)

    Klootwijk, J.H.; Bergveld, H.J.; van Kranenburg, H.; Woerlee, P.H.; Wallinga, Hans

    1996-01-01

    Nitridation of deposited high temperature oxides (HTO) was studied to form high quality inter-polysilicon dielectric layers for embedded non volatile memories. Good quality dielectric layers were obtained earlier by using an optimized deposition of polysilicon and by performing a post-dielectric

  7. Polarity Control in Group-III Nitrides beyond Pragmatism

    Science.gov (United States)

    Mohn, Stefan; Stolyarchuk, Natalia; Markurt, Toni; Kirste, Ronny; Hoffmann, Marc P.; Collazo, Ramón; Courville, Aimeric; Di Felice, Rosa; Sitar, Zlatko; Vennéguès, Philippe; Albrecht, Martin

    2016-05-01

    Controlling the polarity of polar semiconductors on nonpolar substrates offers a wealth of device concepts in the form of heteropolar junctions. A key to realize such structures is an appropriate buffer-layer design that, in the past, has been developed by empiricism. GaN or ZnO on sapphire are prominent examples for that. Understanding the basic processes that mediate polarity, however, is still an unsolved problem. In this work, we study the structure of buffer layers for group-III nitrides on sapphire by transmission electron microscopy as an example. We show that it is the conversion of the sapphire surface into a rhombohedral aluminum-oxynitride layer that converts the initial N-polar surface to Al polarity. With the various AlxOyNz phases of the pseudobinary Al2O3 -AlN system and their tolerance against intrinsic defects, typical for oxides, a smooth transition between the octahedrally coordinated Al in the sapphire and the tetrahedrally coordinated Al in AlN becomes feasible. Based on these results, we discuss the consequences for achieving either polarity and shed light on widely applied concepts in the field of group-III nitrides like nitridation and low-temperature buffer layers.

  8. Joining of boron carbide using nickel interlayer

    International Nuclear Information System (INIS)

    Vosughi, A.; Hadian, A. M.

    2008-01-01

    Carbide ceramics such as boron carbide due to their unique properties such as low density, high refractoriness, and high strength to weight ratio have many applications in different industries. This study focuses on direct bonding of boron carbide for high temperature applications using nickel interlayer. The process variables such as bonding time, temperature, and pressure have been investigated. The microstructure of the joint area was studied using electron scanning microscope technique. At all the bonding temperatures ranging from 1150 to 1300 d eg C a reaction layer formed across the ceramic/metal interface. The thickness of the reaction layer increased by increasing temperature. The strength of the bonded samples was measured using shear testing method. The highest strength value obtained was about 100 MPa and belonged to the samples bonded at 1250 for 75 min bonding time. The strength of the joints decreased by increasing the bonding temperature above 1250 d eg C . The results of this study showed that direct bonding technique along with nickel interlayer can be successfully utilized for bonding boron carbide ceramic to itself. This method may be used for bonding boron carbide to metals as well.

  9. XPS study of the ultrathin a-C:H films deposited onto ion beam nitrided AISI 316 steel

    International Nuclear Information System (INIS)

    Meskinis, S.; Andrulevicius, M.; Kopustinskas, V.; Tamulevicius, S.

    2005-01-01

    Effects of the steel surface treatment by nitrogen ion beam and subsequent deposition of the diamond-like carbon (hydrogenated amorphous carbon (a-C:H) and nitrogen doped hydrogenated amorphous carbon (a-CN x :H)) films were investigated by means of the X-ray photoelectron spectroscopy (XPS). Experimental results show that nitrogen ion beam treatment of the AISI 316 steel surface even at room temperature results in the formation of the Cr and Fe nitrides. Replacement of the respective metal oxides by the nitrides takes place. Formation of the C-N bonds was observed for both ultrathin a-C:H and ultrathin a-CN x :H layers deposited onto the nitrided steel. Some Fe and/or Cr nitrides still were presented at the interface after the film deposition, too. Increased adhesion between the steel substrate and hydrogenated amorphous carbon layer after the ion beam nitridation was explained by three main factors. The first two is steel surface deoxidisation/passivation by nitrogen as a result of the ion beam treatment. The third one is carbon nitride formation at the nitrided steel-hydrogenated amorphous carbon (or a-CN x :H) film interface

  10. Properties of carbides, nitrides and carbonitrides based on Ti and Mo multicomponent layers

    Energy Technology Data Exchange (ETDEWEB)

    Kozlowski, J.; Markowski, J.; Prajzner, A.; Zdanowski, J. [Politechnika Wroclawska (Poland). Inst. Technologii Elektronowej

    1998-01-01

    Coating have been produced by bias activated reactive evaporation method (BARE) [1] on polished HSS steel and Corning glass substrates. Titanium and molybdenum were co-evaporated using a special two-hearth electron gun with separate Ti and Mo evaporation sources. Various chemical compositions were obtained by means of heating time control of respective materials. The working gases were nitrogen, acetylene and a 1:1 mixture of both. The investigation of properties of layers with various chemical compositions covered samples: TiC, TiCN, TiN, (Ti,Mo)C, (Ti,Mo)CN, (Ti,Mo)N, MoC, MoCN, MoN. The chemical film compositions were determined using the energy-dispersive X-ray analysis (EDAX) method. Vickers hardness measurements were made. The structures of the deposited layers were examined by means of X-ray diffraction. The electrical measurements of the deposited layers covered resistivity ({rho}) and temperature coefficient of resistivity (TCR). It has been found that the measurements of electrical properties may be very sensitive indicators of the layer composition and structure. (orig.) 5 refs.

  11. Low threading dislocation density aluminum nitride on silicon carbide through the use of reduced temperature interlayers

    KAUST Repository

    Foronda, Humberto M.; Wu, Feng; Zollner, Christian; Alif, Muhammad Esmed; Saifaddin, Burhan; Almogbel, Abdullah; Iza, Michael; Nakamura, Shuji; DenBaars, Steven P.; Speck, James S.

    2017-01-01

    temperature on the AlN crystal quality, defect density, and surface morphology. The crystal quality was characterized using omega rocking curve scans and the threading dislocation density was determined by plan view transmission electron microscopy. The growth

  12. Handbook of refractory carbides and nitrides: properties, characteristics, processing, and applications

    National Research Council Canada - National Science Library

    Pierson, Hugh O

    1996-01-01

    ... the need for a systematic and objective review ofthese remarkable materials, one which would cover the scientific, engineering and applications viewpoints, coordinate the various trends, and promote interaction among researchers and users alike. This book should be useful to scientists, engineers, technicians, as well as production and marketing mana...

  13. Nitride and carbide thin films as hydrogen permeation barrier on Manet steel

    International Nuclear Information System (INIS)

    Benamati, G.; Checchetto, R.; Bonelli, M.; Gratton, L.M.; Guzman, L.; Miotello, A.; Terlain, A.

    1995-01-01

    TiC / TiN bilayers, ∼ 1.2 μm thick, were deposited on Manet II steel by the ion beam assisted deposition technique to investigate the possible use of this ceramic coating as hydrogen barrier. Hydrogen permeation experiments in the temperature range 470-570 K showed indeed that this coating is a very efficient barrier to the hydrogen permeation being able to reduce the hydrogen flux up to two order of magnitude with respect to the uncoated steel. Preliminary compatibility tests between coated Manet II and Pb-17Li showed no attack of Pb-17Li to the steel. (orig.)

  14. Nitride and carbide thin films as hydrogen permeation barrier on MANET steel

    International Nuclear Information System (INIS)

    Benamati, G.

    1994-01-01

    TiC/TiN bilayers, - 1.2 μm thick, were deposited on Manet II steel by the ion beam assisted deposition technique to investigate the possible use of this ceramic coating as hydrogen barrier. Hydrogen permeation experiments in the temperature range 470-570 K showed indeed that this coating is a very efficient barrier to the hydrogen permeation being able to reduce the hydrogen flux up to two order of magnitude with respect to the uncoated steel. Preliminary compatibility tests between coated Manet II and Pb-17Li showed no attack of Pb-17Li to the steel. (author) 8 refs.; 2 figs.; 1 tab

  15. Low threading dislocation density aluminum nitride on silicon carbide through the use of reduced temperature interlayers

    KAUST Repository

    Foronda, Humberto M.

    2017-11-23

    In this work, reduced threading dislocation density AlN on (0 0 0 1) 6H-SiC was realized through the use of reduced temperature AlN interlayers in the metalorganic chemical vapor deposition growth. We explored the dependence of the interlayer growth temperature on the AlN crystal quality, defect density, and surface morphology. The crystal quality was characterized using omega rocking curve scans and the threading dislocation density was determined by plan view transmission electron microscopy. The growth resulted in a threading dislocation density of 7 × 108 cm−2 indicating a significant reduction in the defect density of AlN in comparison to direct growth of AlN on SiC (∼1010 cm−2). Atomic force microscopy images demonstrated a clear step-terrace morphology that is consistent with step flow growth at high temperature. Reducing the interlayer growth temperature increased the TD inclination and thus enhanced TD-TD interactions. The TDD was decreased via fusion and annihilation reactions.

  16. The Physics and Chemistry of carbides, Nitrides and Borides. Volume 185

    Science.gov (United States)

    1990-01-01

    Mater. Sci. Engng., 27, 83. [5) Grathwohl, G., Reets, T.H. and Thummler, F. (1981) Sci. Ceram., 11, 425. [6) Djemel, A., Cadoz , J. and Philibert, J...Monatsh 3, 49-55. 28. Jepps, N. W. (1979), Ph.D. Dissertation, Univ. Cambridge, UK. 29. Gauther, J.P. (1978), Ph.D. Thesis, Univ. Claude Bernard

  17. Nitride alloy layer formation of duplex stainless steel using nitriding process

    Science.gov (United States)

    Maleque, M. A.; Lailatul, P. H.; Fathaen, A. A.; Norinsan, K.; Haider, J.

    2018-01-01

    Duplex stainless steel (DSS) shows a good corrosion resistance as well as the mechanical properties. However, DSS performance decrease as it works under aggressive environment and at high temperature. At the mentioned environment, the DSS become susceptible to wear failure. Surface modification is the favourable technique to widen the application of duplex stainless steel and improve the wear resistance and its hardness properties. Therefore, the main aim of this work is to nitride alloy layer on the surface of duplex stainless steel by the nitriding process temperature of 400°C and 450°C at different time and ammonia composition using a horizontal tube furnace. The scanning electron microscopy and x-ray diffraction analyzer are used to analyse the morphology, composition and the nitrided alloy layer for treated DSS. The micro hardnesss Vickers tester was used to measure hardness on cross-sectional area of nitrided DSS. After nitriding, it was observed that the hardness performance increased until 1100 Hv0.5kgf compared to substrate material of 250 Hv0.5kgf. The thickness layer of nitride alloy also increased from 5μm until 100μm due to diffusion of nitrogen on the surface of DSS. The x-ray diffraction results showed that the nitride layer consists of iron nitride, expanded austenite and chromium nitride. It can be concluded that nitride alloy layer can be produced via nitriding process using tube furnace with significant improvement of microstructural and hardness properties.

  18. Frequency effects and properties of plasma deposited fluorinated silicon nitride

    International Nuclear Information System (INIS)

    Chang, C.; Flamm, D.L.; Ibbotson, D.E.; Mucha, J.A.

    1988-01-01

    The properties of low-hydrogen, fluorinated plasma-enhanced chemical vapor deposition (PECVD) silicon nitride films grown using NF 3 /SiH 4 /N 2 feed mixtures in 200 kHz and 14 MHz discharges were compared. High-energy ion bombardment at 200 kHz is expected to enhance surface diffusion and chemical reconstruction. Compared to fluorinated silicon nitride deposited at 14 MHz under otherwise comparable conditions, the 200 kHz films had a lower Si--H bond concentration (approx. 21 cm -3 ), lower total hydrogen content (5--8 x 10 21 cm -3 ), better resistance to oxidation, lower compressive stress (-0.7 to -1.5 Gdyne/cm), and higher density (3.1 g/cm 3 ). The dielectric constant of better low-frequency Class I films was constant to 500 MHz, while that of high-frequency films fell up to 15% between 100 Hz and 10 MHz. The absorption edges of low-frequency PECVD fluorinated silicon nitride films were between 5.0 and 6.1 eV, which compare with 4.4 to 5.6 eV for the high-excitation frequency fluorinated material and 3 to 4 eV for conventional PECVD nitride. However high-frequency films may have fewer trap centers and a lower dielectric constant. 14 MHz p-SiN:F films grown with NH 3 as an auxiliary nitrogen source showed absorption edges similar to low-frequency material grown from NF 3 /SiH 4 /N 2 , but they have substantially more N--H bonding. The dielectric constant and absorption edge of these films were comparable to those of low-frequency p-SiN:F from NF 3 /SiH 4 /N 2

  19. Processing and properties of solid state nitrided stainless steels

    International Nuclear Information System (INIS)

    Rennhard, C.A.P.

    1993-02-01

    The properties of austenitic steels and duplex-steels are significantly improved by nitrogen (N) addition. In the present investigation, new alloys were produced and characterized using the high solid N-solubility and diffusion alloying from the gas phase. Most suitable base materials are powder, wire or sheet because of the short diffusion distance. PM-materials were in-can nitrided or treated in a fluidized bed and compacted by Hot Isostatic Pressing (HIP) or hot extrusion. The impact toughness level of PM alloys at room temperature is about 120 to 200 J, compared to 250 to 300 J for steels with equal strength that are produced by ingot metallurgy (IM). The toughness can be improved by high temperature deformation such as forging, hot rolling or hot extrusion or by removing the oxide layer on the particle surface by hydrogen gas reduction. A duplex steel with 22 Cr, 5.6 Ni and 2.7 Mo was transformed to a fully austenitic steel with over 500 MPa yield strength by increasing the N content from 0.2 to 0.65 weight-percent. The expensive Ni can successfully be replaced by N. Nitrided wire material is the base material for cold deformed high-strength wire. The improved strain hardening rate of nitrogen alloyed steels helps to achieve ductile and corrosion resistant materials with strength up to 2200 MPa. Sheet materials were diffusion bonded in the HIP or compacted in a 5000 kN press immediately after in-can nitriding to form solid blocks. Nitrided powder, wire and sheet materials lead to near net shape products that cannot be produced by conventional ingot metallurgy or would require the expensive high-pressure metallurgy. (author) 67 figs., tabs., 70 refs

  20. stabilization of ikpayongo laterite with cement and calcium carbide

    African Journals Online (AJOL)

    PROF EKWUEME

    Laterite obtained from Ikpayongo was stabilized with 2-10 % cement and 2-10 % Calcium Carbide waste, for use .... or open dumping which have effect on surface and ... Table 1: Chemical Composition of Calcium Carbide Waste and Cement.