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Sample records for oxide zno single

  1. Giant negative photoresistance of ZnO single crystals

    Energy Technology Data Exchange (ETDEWEB)

    Barzola-Quiquia, Jose; Esquinazi, Pablo [Division of Superconductivity and Magnetism, University of Leipzig (Germany); Heluani, Silvia [Laboratorio de Fisica del Solido, FCEyT, Universidad Nacional de Tucuman, 4000 S. M. de Tucuman (Argentina); Villafuerte, Manuel [Dept. de Fisica, FCEyT, Universidad Nacional de Tucuman (Argentina); CONICET, Tucuman (Argentina); Poeppl, Andreas [Division of Magnetic Resonance of Complex Quantum Solids, University of Leipzig, D-04103 Leipzig (Germany)

    2011-07-01

    ZnO is a wide band gap semiconductor exhibiting the largest charge-carrier mobility among oxides. ZnO is a material with potential applications for short-wavelength optoelectronic devices, as a blue light emitting diodes and in spintronics. In this contribution we have measured the temperature dependence (30 K < T < 300 K) of the electrical resistance of ZnO single crystals prepared by hydrothermal method in darkness and under the influence of light in the ultraviolet range. The resistance decreases several orders of magnitude at temperatures T < 200 K after illumination. Electron paramagnetic resonance studies under illumination reveal that the excitation of Li acceptor impurities is the origin for the giant negative photoresistance effect. Permanent photoresistance effect is also observed, which remains many hours after leaving the crystal in darkness.

  2. Halide-oxide carbon vapor transport of ZnO: Novel approach for unseeded growth of single crystals with controllable growth direction

    Science.gov (United States)

    Colibaba, G. V.

    2018-05-01

    The thermodynamic analysis of using HCl + CO gas mixture as a chemical vapor transport agent (TA) for ZnO single crystal growth in closed ampoules, including 11 chemical species, is carried out for wide temperature and loaded TA pressure ranges. The advantages of HCl + CO TA for faster and more stable growth are shown theoretically in comparison with HCl, HCl + H2 and CO. The influence of the growth temperature, of the TA density, of the HCl/CO ratio, and of the undercooling on the ZnO mass transport rate was investigated theoretically and experimentally. The HCl/CO ratios favorable for the growth of m planes and (0001)Zn surface were found. It was shown that HCl + CO TA provides: (i) a rather high growth rate (up to 1.5 mm per day); (ii) a decrease of wall adhesion effect and an etch pit density down to 103 cm-2; (iii) a minimization of growth nucleus quantity down to 1; (iv) stable unseeded growth of the high crystalline quality large single crystals with a controllable preferred growth direction. The characterization by the photoluminescence spectra, the transmission spectra and the electrical properties are analyzed.

  3. Single and couple doping ZnO nanocrystals characterized by positron techniques

    International Nuclear Information System (INIS)

    Pasang, Tenzin; Namratha, Keerthiraj; Byrappa, Kullaiah; Guagliardo, Paul; Ranganathaiah, Chikkakuntappa; Samarin, S; Williams, J F

    2015-01-01

    Zinc oxide (ZnO) nanocrystals have been synthesized using a mild hydrothermal process using low temperatures and pressures with the advantages of free growth catalyst, low cost and alternative technology. Positron annihilation lifetime spectroscopy and coincidence Doppler broadening (CDB) spectroscopic methods have been used to investigate the roles of single- and co-dopants and native defects of the ZnO nanocrystals controlled by the synthesis process. It is shown that single Ag 1+ and Pd 2+ dopants occupy interstitial sites of the ZnO lattice and single Ru 3+ doping replaces Zn vacancies substitutionally with a significant effect on the CDB momentum ratio curves when compared using ZnO as the reference spectrum. The co-doping of the ZnO lattice with (Sn 4+ + Co 2+ ) shows similar CDB ratios as Ru 3+ single-doping. Also co-doping with (Ag 1+ + Pd 2+ ) or (Ag 1+ + W 6+ ) shows significant decreases in the band gap energy up to about 12.6% compared to single doping. The momentum ratio curves, referenced to undoped ZnO, indicate dopants in interstitial and substitutional sites. The presence of transition metal ions interstitially will trap electrons which resist the recombination of electrons and in turn affect the conductivity of the material. (paper)

  4. Single and couple doping ZnO nanocrystals characterized by positron techniques

    Science.gov (United States)

    Pasang, Tenzin; Namratha, Keerthiraj; Guagliardo, Paul; Byrappa, Kullaiah; Ranganathaiah, Chikkakuntappa; Samarin, S.; Williams, J. F.

    2015-04-01

    Zinc oxide (ZnO) nanocrystals have been synthesized using a mild hydrothermal process using low temperatures and pressures with the advantages of free growth catalyst, low cost and alternative technology. Positron annihilation lifetime spectroscopy and coincidence Doppler broadening (CDB) spectroscopic methods have been used to investigate the roles of single- and co-dopants and native defects of the ZnO nanocrystals controlled by the synthesis process. It is shown that single Ag1+ and Pd2+ dopants occupy interstitial sites of the ZnO lattice and single Ru3+ doping replaces Zn vacancies substitutionally with a significant effect on the CDB momentum ratio curves when compared using ZnO as the reference spectrum. The co-doping of the ZnO lattice with (Sn4+ + Co2+) shows similar CDB ratios as Ru3+ single-doping. Also co-doping with (Ag1+ + Pd2+) or (Ag1+ + W6+) shows significant decreases in the band gap energy up to about 12.6% compared to single doping. The momentum ratio curves, referenced to undoped ZnO, indicate dopants in interstitial and substitutional sites. The presence of transition metal ions interstitially will trap electrons which resist the recombination of electrons and in turn affect the conductivity of the material.

  5. Photocatalytic Water Oxidation on ZnO: A Review

    Directory of Open Access Journals (Sweden)

    Sharifah Bee Abdul Hamid

    2017-03-01

    Full Text Available The investigation of the water oxidation mechanism on photocatalytic semiconductor surfaces has gained much attention for its potential to unlock the technological limitations of producing H2 from carbon-free sources, i.e., H2O. This review seeks to highlight the available scientific and fundamental understanding towards the water oxidation mechanism on ZnO surfaces, as well as present a summary on the modification strategies carried out to increase the photocatalytic response of ZnO.

  6. Polarized Raman scattering of single ZnO nanorod

    International Nuclear Information System (INIS)

    Yu, J. L.; Lai, Y. F.; Wang, Y. Z.; Cheng, S. Y.; Chen, Y. H.

    2014-01-01

    Polarized Raman scattering measurement on single wurtzite c-plane (001) ZnO nanorod grown by hydrothermal method has been performed at room temperature. The polarization dependence of the intensity of the Raman scattering for the phonon modes A 1 (TO), E 1 (TO), and E 2 high in the ZnO nanorod are obtained. The deviations of polarization-dependent Raman spectroscopy from the prediction of Raman selection rules are observed, which can be attributed to the structure defects in the ZnO nanorod as confirmed by the comparison of the transmission electron microscopy, photoluminescence spectra as well as the polarization dependent Raman signal of the annealed and unannealed ZnO nanorod. The Raman tensor elements of A 1 (TO) and E 1 (TO) phonon modes normalized to that of the E 2 high phonon mode are |a/d|=0.32±0.01, |b/d|=0.49±0.02, and |c/d|=0.23±0.01 for the unannealed ZnO nanorod, and |a/d|=0.33±0.01, |b/d|=0.45±0.01, and |c/d|=0.20±0.01 for the annealed ZnO nanorod, which shows strong anisotropy compared to that of bulk ZnO epilayer

  7. ZnO thin films on single carbon fibres fabricated by Pulsed Laser Deposition (PLD)

    Energy Technology Data Exchange (ETDEWEB)

    Krämer, André; Engel, Sebastian [Otto Schott Institute of Materials Research (OSIM), Friedrich Schiller University Jena, Löbdergraben 32, 07743 Jena (Germany); Sangiorgi, Nicola [Institute of Science and Technology for Ceramics – National Research Council of Italy (CNR-ISTEC), via Granarolo 64, 48018 Faenza, RA (Italy); Department of Chemical Science and Technologies, University of Rome Tor Vergata, via della Ricerca Scientifica, 00133 Rome (Italy); Sanson, Alessandra [Institute of Science and Technology for Ceramics – National Research Council of Italy (CNR-ISTEC), via Granarolo 64, 48018 Faenza, RA (Italy); Bartolomé, Jose F. [Instituto de Ciencia de Materiales de Madrid (ICMM), Consejo Superior de Investigaciones Científicas (CSIC), C/Sor Juana Inés de la Cruz 3, 28049 Madrid (Spain); Gräf, Stephan, E-mail: stephan.graef@uni-jena.de [Otto Schott Institute of Materials Research (OSIM), Friedrich Schiller University Jena, Löbdergraben 32, 07743 Jena (Germany); Müller, Frank A. [Otto Schott Institute of Materials Research (OSIM), Friedrich Schiller University Jena, Löbdergraben 32, 07743 Jena (Germany); Center for Energy and Environmental Chemistry Jena (CEEC Jena), Friedrich Schiller University Jena, Philosophenweg 7a, 07743 Jena (Germany)

    2017-03-31

    Highlights: • Carbon fibres were entirely coated with thin films consisting of aligned ZnO crystals. • A Q-switched CO2 laser was utilised as radiation source. • Suitability of ZnO thin films on carbon fibres as photo anodes for DSSC was studied. - Abstract: Single carbon fibres were 360° coated with zinc oxide (ZnO) thin films by pulsed laser deposition using a Q-switched CO{sub 2} laser with a pulse duration τ ≈ 300 ns, a wavelength λ = 10.59 μm, a repetition frequency f{sub rep} = 800 Hz and a peak power P{sub peak} = 15 kW in combination with a 3-step-deposition technique. In a first set of experiments, the deposition process was optimised by investigating the crystallinity of ZnO films on silicon and polished stainless steel substrates. Here, the influence of the substrate temperature and of the oxygen partial pressure of the background gas were characterised by scanning electron microscopy and X-ray diffraction analyses. ZnO coated carbon fibres and conductive glass sheets were used to prepare photo anodes for dye-sensitised solar cells in order to investigate their suitability for energy conversion devices. To obtain a deeper insight of the electronic behaviour at the interface between ZnO and substrate I–V measurements were performed.

  8. Synthesis and characterization of thermally oxidized ZnO films

    Indian Academy of Sciences (India)

    Administrator

    Synthesis and characterization of thermally oxidized ZnO films. A P RAMBU1,* and N IFTIMIE2 .... R. −. Δ. = = (1) where Ra is the sensor resistance in the air and Rg is the .... ple, Aida and coworkers (2006) reported that the total oxidation is ...

  9. Single fiber UV detector based on hydrothermally synthesized ZnO nanorods for wearable computing devices

    Science.gov (United States)

    Eom, Tae Hoon; Han, Jeong In

    2018-01-01

    There has been increasing interest in zinc oxide (ZnO) based ultraviolet (UV) sensing devices over the last several decades owing to their diverse range of applications. ZnO has extraordinary properties, such as a wide band gap and high exciton binding energy, which make it a beneficial material for UV sensing device. Herein, we show a ZnO UV sensing device fabricated on a cylindrical Polyethylene terephthalate (PET) monofilament. The ZnO active layer was synthesized by hydrothermal synthesis and the Cu electrodes were deposited by radio frequency (RF) magnetron sputtering. Cu thin film was deposited uniformly on a single PET fiber by rotating it inside the sputtering chamber. Various characteristics were investigated by changing the concentration of the seed solution and the growth solution. The growth of ZnO nanorods was confirmed by Field Emission Scanning Electron Microscopy (FESEM) to see the surface state and structure, followed by X-ray Diffraction (XRD) and X-ray photoelectron spectroscopy (XPS) analysis. Also, current-voltage (I-V) curves were obtained to measure photocurrent and conductance. Furthermore, falling response time, rising response time, and responsivity were calculated by analyzing current-time (I-t) curves.

  10. Defect spectroscopy of single ZnO microwires

    Science.gov (United States)

    Villafuerte, M.; Ferreyra, J. M.; Zapata, C.; Barzola-Quiquia, J.; Iikawa, F.; Esquinazi, P.; Heluani, S. P.; de Lima, M. M.; Cantarero, A.

    2014-04-01

    The point defects of single ZnO microwires grown by carbothermal reduction were studied by microphotoluminescence, photoresistance excitation spectra, and resistance as a function of the temperature. We found the deep level defect density profile along the microwire showing that the concentration of defects decreases from the base to the tip of the microwires and this effect correlates with a band gap narrowing. The results show a characteristic deep defect levels inside the gap at 0.88 eV from the top of the VB. The resistance as a function of the temperature shows defect levels next to the bottom of the CB at 110 meV and a mean defect concentration of 4 × 1018 cm-3. This combination of techniques allows us to study the band gap values and defects states inside the gap in single ZnO microwires and opens the possibility to be used as a defect spectroscopy method.

  11. Hydrogen-related complexes in Li-diffused ZnO single crystals

    Science.gov (United States)

    Corolewski, Caleb D.; Parmar, Narendra S.; Lynn, Kelvin G.; McCluskey, Matthew D.

    2016-07-01

    Zinc oxide (ZnO) is a wide band gap semiconductor and a potential candidate for next generation white solid state lighting applications. In this work, hydrogen-related complexes in lithium diffused ZnO single crystals were studied. In addition to the well-known Li-OH complex, several other hydrogen defects were observed. When a mixture of Li2O and ZnO is used as the dopant source, zinc vacancies are suppressed and the bulk Li concentration is very high (>1019 cm-3). In that case, the predominant hydrogen complex has a vibrational frequency of 3677 cm-1, attributed to surface O-H species. When Li2CO3 is used, a structured blue luminescence band and O-H mode at 3327 cm-1 are observed at 10 K. These observations, along with positron annihilation measurements, suggest a zinc vacancy-hydrogen complex, with an acceptor level ˜0.3 eV above the valence-band maximum. This relatively shallow acceptor could be beneficial for p-type ZnO.

  12. Hydrogen-related complexes in Li-diffused ZnO single crystals

    International Nuclear Information System (INIS)

    Corolewski, Caleb D.; Parmar, Narendra S.; Lynn, Kelvin G.; McCluskey, Matthew D.

    2016-01-01

    Zinc oxide (ZnO) is a wide band gap semiconductor and a potential candidate for next generation white solid state lighting applications. In this work, hydrogen-related complexes in lithium diffused ZnO single crystals were studied. In addition to the well-known Li-OH complex, several other hydrogen defects were observed. When a mixture of Li_2O and ZnO is used as the dopant source, zinc vacancies are suppressed and the bulk Li concentration is very high (>10"1"9" cm"−"3). In that case, the predominant hydrogen complex has a vibrational frequency of 3677 cm"−"1, attributed to surface O-H species. When Li_2CO_3 is used, a structured blue luminescence band and O-H mode at 3327 cm"−"1 are observed at 10 K. These observations, along with positron annihilation measurements, suggest a zinc vacancy–hydrogen complex, with an acceptor level ∼0.3 eV above the valence-band maximum. This relatively shallow acceptor could be beneficial for p-type ZnO.

  13. Hydrogen-related complexes in Li-diffused ZnO single crystals

    Energy Technology Data Exchange (ETDEWEB)

    Corolewski, Caleb D. [Materials Science and Engineering Program, Washington State University, Pullman, Washington 99164-2814 (United States); Parmar, Narendra S.; Lynn, Kelvin G. [Center for Materials Research, Washington State University, Pullman, Washington 99164-2814 (United States); McCluskey, Matthew D., E-mail: mattmcc@wsu.edu [Materials Science and Engineering Program, Washington State University, Pullman, Washington 99164-2814 (United States); Department of Physics and Astronomy, Washington State University, Pullman, Washington 99164-2814 (United States)

    2016-07-21

    Zinc oxide (ZnO) is a wide band gap semiconductor and a potential candidate for next generation white solid state lighting applications. In this work, hydrogen-related complexes in lithium diffused ZnO single crystals were studied. In addition to the well-known Li-OH complex, several other hydrogen defects were observed. When a mixture of Li{sub 2}O and ZnO is used as the dopant source, zinc vacancies are suppressed and the bulk Li concentration is very high (>10{sup 19 }cm{sup −3}). In that case, the predominant hydrogen complex has a vibrational frequency of 3677 cm{sup −1}, attributed to surface O-H species. When Li{sub 2}CO{sub 3} is used, a structured blue luminescence band and O-H mode at 3327 cm{sup −1} are observed at 10 K. These observations, along with positron annihilation measurements, suggest a zinc vacancy–hydrogen complex, with an acceptor level ∼0.3 eV above the valence-band maximum. This relatively shallow acceptor could be beneficial for p-type ZnO.

  14. Cathodoluminescence of single ZnO nanorod heterostructures

    Energy Technology Data Exchange (ETDEWEB)

    Piechal, Bernard; Donatini, Fabrice; Dang, Le Si [CNRS-CEA-UJF joint group ' ' Nanophysique et Semiconducteurs' ' , Universite Joseph Fourier (CNRS UMR 5588), Saint Martin d' Heres (France); Yoo, Jinkyoung; Yi, Gyu-Chul [National CRI Center for Semiconductor Nanorods and Department of Materials Science and Engineering, Pohang University of Science and Technology (POSTECH), Pohang (Korea); Elshaer, Abdelhamid; Mofor, A.C.; Bakin, Andrey; Waag, Andreas [Institute of Semiconductor Technology (IHT), TU Braunschweig (Germany)

    2007-05-15

    Optical properties of ZnO-based single nanorods are probed by cathodoluminescence (CL) measurements at T = 5 K. We observe a variation of the ZnO near band edge CL by three orders of magnitude along the nanorod axis, accompanied by a spectral blueshift of 10-30 meV. This indicates a rather poor structural quality of the nanorod bottom part, close to the substrate. ZnO/ZnMgO quantum wells grown on top of ZnO nanorods are found to exhibit much stronger confinement effects as compared to their two-dimensional counterparts, suggesting a reduced spontaneous and piezoelectric polarization effects. (copyright 2007 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  15. Single ZnO nanowire-PZT optothermal field effect transistors.

    Science.gov (United States)

    Hsieh, Chun-Yi; Lu, Meng-Lin; Chen, Ju-Ying; Chen, Yung-Ting; Chen, Yang-Fang; Shih, Wan Y; Shih, Wei-Heng

    2012-09-07

    A new type of pyroelectric field effect transistor based on a composite consisting of single zinc oxide nanowire and lead zirconate titanate (ZnO NW-PZT) has been developed. Under infrared (IR) laser illumination, the transconductance of the ZnO NW can be modulated by optothermal gating. The drain current can be increased or decreased by IR illumination depending on the polarization orientation of the Pb(Zr(0.3)Ti(0.7))O(3) (PZT) substrate. Furthermore, by combining the photocurrent behavior in the UV range and the optothermal gating effect in the IR range, the wide spectrum of response of current by light offers a variety of opportunities for nanoscale optoelectronic devices.

  16. Single-Crystal Mesoporous ZnO Thin Films Composed of Nanowalls

    KAUST Repository

    Wang, Xudong

    2009-02-05

    This paper presents a controlled, large scale fabrication of mesoporous ZnO thin films. The entire ZnO mesoporous film is one piece of a single crystal, while high porosity made of nanowalls is present. The growth mechanism was proposed in comparison with the growth of ZnO nanowires. The ZnO mesoporous film was successfully applied as a gas sensor. The fabrication and growth analysis of the mesoporous ZnO thin film gi ve general guidance for the controlled growth of nanostructures. It also pro vides a unique structure with a superhigh surface-to-volume ratio for surface-related applications. © 2009 American Chemical Society.

  17. Oxidant-Dependent Thermoelectric Properties of Undoped ZnO Films by Atomic Layer Deposition

    KAUST Repository

    Kim, Hyunho

    2017-02-27

    Extraordinary oxidant-dependent changes in the thermoelectric properties of undoped ZnO thin films deposited by atomic layer deposition (ALD) have been observed. Specifically, deionized water and ozone oxidants are used in the growth of ZnO by ALD using diethylzinc as a zinc precursor. No substitutional atoms have been added to the ZnO films. By using ozone as an oxidant instead of water, a thermoelectric power factor (σS) of 5.76 × 10 W m K is obtained at 705 K for undoped ZnO films. In contrast, the maximum power factor for the water-based ZnO film is only 2.89 × 10 W m K at 746 K. Materials analysis results indicate that the oxygen vacancy levels in the water- and ozone-grown ZnO films are essentially the same, but the difference comes from Zn-related defects present in the ZnO films. The data suggest that the strong oxidant effect on thermoelectric performance can be explained by a mechanism involving point defect-induced differences in carrier concentration between these two oxides and a self-compensation effect in water-based ZnO due to the competitive formations of both oxygen and zinc vacancies. This strong oxidant effect on the thermoelectric properties of undoped ZnO films provides a pathway to improve the thermoelectric performance of this important material.

  18. Growth of Single- and Bilayer ZnO on Au(111) and Interaction with Copper

    Energy Technology Data Exchange (ETDEWEB)

    Deng, Xingyi; Yao, Kun; Sun, Keju; Li, Wei-Xue; Lee, Junseok; Matranga, Christopher

    2013-05-02

    The stoichiometric single- and bi-layer ZnO(0001) have been prepared by reactive deposition of Zn on Au(111) and studied in detail with X-ray photoelectron spectroscopy, scanning tunneling microscopy, and density functional theory calculations. Both single- and bi-layer ZnO(0001) adopt a planar, graphite-like structure similar to freestanding ZnO(0001) due to the weak van der Waals interactions dominating their adhesion with the Au(111) substrate. At higher temperature, the single-layer ZnO(0001) converts gradually to bi-layer ZnO(0001) due to the twice stronger interaction between two ZnO layers than the interfacial adhesion of ZnO with Au substrate. It is found that Cu atoms on the surface of bi-layer ZnO(0001) are mobile with a diffusion barrier of 0.31 eV, and likely to agglomerate and form nanosized particles at low coverages; while Cu atoms tend to penetrate a single layer of ZnO(0001) with a barrier of 0.10 eV, resulting in a Cu free surface.

  19. Catalyst growth of single crystal aligned ZnO nanorods on ZnO thin films

    Energy Technology Data Exchange (ETDEWEB)

    Zhao, Dongxu; Andreazza, Caroline; Andreazza, Pascal [Centre de Recherche sur la Matiere Divisee, CNRS-Universite d' Orleans, 1b rue de la Ferollerie, 45071 Orleans cedex 2 (France)

    2005-02-01

    One dimensional ZnO nanorods were successfully fabricated on Si substrates via a simple physical vapor-phase transport method at 950 C. A ZnO shell covered Au/Zn alloy is assumed as the nucleation site, then ZnO nanorods grow following a vapor-solid (VS) process. In order to guide the nanorod growth a c-axis oriented ZnO thin film and Au catalyst were first deposited on Si (100) surface. SEM images show nanorods grown on this substrate are vertical to the substrate surface. (copyright 2005 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  20. Electrical transport properties of single ZnO nanorods

    International Nuclear Information System (INIS)

    Heo, Y.W.; Tien, L.C.; Norton, D.P.; Kang, B.S.; Ren, F.; Gila, B.P.; Pearton, S.J.

    2004-01-01

    Single ZnO nanorods with diameters of ∼130 nm were grown on Au-coated Al 2 O 3 substrates by catalyst-driven molecular beam epitaxy. Individual nanorods were removed from the substrate and placed between Ohmic contact pads and the current-voltage characteristics measured as a function of temperature and gas ambient. In the temperature range from 25 to 150 deg. C, the resistivity of nanorods treated in H 2 at 400 deg. C prior to measurement showed an activation energy of 0.089±0.02 eV and was insensitive to the ambient used (C 2 H 4 ,N 2 O,O 2 or 10% H 2 in N 2 ). By sharp contrast, the conductivity of nanorods not treated in H 2 was sensitive to trace concentrations of gases in the measurement ambient even at room temperature, demonstrating their potential as gas sensors

  1. A comparison study between ZnO nanorods coated with graphene oxide and reduced graphene oxide

    International Nuclear Information System (INIS)

    Ding, Jijun; Wang, Minqiang; Deng, Jianping; Gao, Weiyin; Yang, Zhi; Ran, Chenxin; Zhang, Xiangyu

    2014-01-01

    Highlights: • Optical properties between ZnO-GO and ZnO-RGO composites were compared. • Photoluminescence quenching was observed in ZnO-GO composites. • We obtained enhanced photoluminescence in ZnO-RGO composites. -- Abstract: ZnO nanorods (ZnO NRs) coated with graphene oxide (ZnO-GO) and reduced graphene oxide sheets (ZnO-RGO) were prepared on indium tin oxide (ITO) substrates. The crystal structures, morphology and optical properties were analyzed by using X-ray diffraction (XRD) pattern, scanning electron microscopy (SEM) images, absorption spectra and photoluminescence (PL) spectra, respectively. A comparison between PL properties from ZnO-GO and ZnO-RGO were studied. Results indicated that the peak at 442 nm and a broad band at 450–600 nm of ZnO NRs show PL quenching after coating with GO sheets. As coating with RGO sheets, the extent of PL quenching increases. It is interesting to note that as ZnO NRs coated with RGO sheets, the intensity of PL peak at 390 nm significantly increased. The enhanced PL emission research in ZnO-RGO is directed toward development of the “nextgeneration” optoelectronics devices related with graphene materials

  2. Single-Crystal Mesoporous ZnO Thin Films Composed of Nanowalls

    KAUST Repository

    Wang, Xudong; Ding, Yong; Li, Zhou; Song, Jinhui; Wang, Zhong Lin

    2009-01-01

    This paper presents a controlled, large scale fabrication of mesoporous ZnO thin films. The entire ZnO mesoporous film is one piece of a single crystal, while high porosity made of nanowalls is present. The growth mechanism was proposed

  3. Fabrication and thermal oxidation of ZnO nano fibers prepared via electro spinning technique

    International Nuclear Information System (INIS)

    Baek, Jeongha; Park, Juyun; Kim, Don; Kang, Yongcheol; Koh, Sungwi; Kang, Jisoo

    2012-01-01

    Materials on the scale of nano scale have widely been used as research topics because of their interesting characteristics and aspects they bring into the field. Out of the many metal oxides, zinc oxide (ZnO) was chosen to be fabricated as nano fibers using the electro spinning method for potential uses of solar cells and sensors. After ZnO nano fibers were obtained, calcination temperature effects on the ZnO nano fibers were studied and reported here. The results of scanning electron microscopy (SEM) revealed that the aggregation of the ZnO nano fibers progressed by calcination. X-ray diffraction (XRD) study showed the hcp ZnO structure was enhanced by calcination at 873 and 1173 K. Transmission electron microscopy (TEM) confirmed the crystallinity of the calcined ZnO nano fibers. X-ray photoelectron spectroscopy (XPS) verified the thermal oxidation of Zn species by calcination in the nano fibers. These techniques have helped US deduce the facts that the diameter of ZnO increases as the calcination temperature was raised; the process of calcination affects the crystallinity of ZnO nano fibers, and the thermal oxidation of Zn species was observed as the calcination temperature was raised

  4. Radio-frequency magnetron sputtering and wet thermal oxidation of ZnO thin film

    International Nuclear Information System (INIS)

    Liu, H. F.; Chua, S. J.; Hu, G. X.; Gong, H.; Xiang, N.

    2007-01-01

    The authors studied the growth and wet thermal oxidation (WTO) of ZnO thin films using a radio-frequency magnetron sputtering technique. X-ray diffraction reveals a preferred orientation of [1010]ZnO(0002)//[1120]Al 2 O 3 (0002) coexisted with a small amount of ZnO (1011) and ZnO (1013) crystals on the Al 2 O 3 (0001) substrate. The ZnO (1011) and ZnO (1013) crystals, as well as the in-plane preferred orientation, are absent from the growth of ZnO on the GaAs(001) substrate. WTO at 550 deg. C improves the crystalline and the photoluminescence more significantly than annealing in air, N 2 and O 2 ambient; it also tends to convert the crystal from ZnO (1011) and ZnO (1013) to ZnO (0002). The evolution of the photoluminescence upon WTO and annealing reveals that the green and orange emissions, centered at 520 and 650 nm, are likely originated from oxygen vacancies and oxygen interstitials, respectively; while the 420 nm emission, which is very sensitive to the postgrowth thermal processing regardless of the substrate and the ambient gas, is likely originated from the surface-state related defects

  5. Mechanism of oxidative stress involved in the toxicity of ZnO nanoparticles against eukaryotic cells

    Directory of Open Access Journals (Sweden)

    M. Saliani

    2016-01-01

    Full Text Available ZnO NPs (zinc oxide nanoparticles has generated significant scientific interest as a novel antibacterial and anticancer agent. Since oxidative stress is a critical determinant of ZnO NPs-induced damage, it is necessary to characterize their underlying mode of action. Different structural and physicochemical properties of ZnO NPs such as particle surface, size, shape, crystal structure, chemical position, and presence of metals can lead to changes in biological activities including ROS (reactive oxygen species production. However, there are some inconsistencies in the literature on the relation between the physicochemical features of ZnO NPs and their plausible oxidative stress mechanism. Herein, the possible oxidative stress mechanism of ZnO NPs was reviewed. This is worthy of further detailed evaluations in order to improve our understanding of vital NPs characteristics governing their toxicity. Therefore, this study focuses on the different reported oxidative stress paradigms induced by ZnO NPs including ROS generated by NPs, oxidative stress due to the NPs-cell interaction, and role of the particle dissolution in the oxidative damage. Also, this study tries to characterize and understand the multiple pathways involved in oxidative stress induced by ZnO NPs. Knowledge about different cellular signaling cascades stimulated by ZnO NPs lead to the better interpretation of the toxic influences induced by the cellular and acellular parameters. Regarding the potential benefits of toxic effects of ZnO NPs, in-depth evaluation of their toxicity mechanism and various effects of these nanoparticles would facilitate their implementation for biomedical applications.

  6. Aluminum doping tunes band gap energy level as well as oxidative stress-mediated cytotoxicity of ZnO nanoparticles in MCF-7 cells

    Science.gov (United States)

    Akhtar, Mohd Javed; Alhadlaq, Hisham A.; Alshamsan, Aws; Majeed Khan, M. A.; Ahamed, Maqusood

    2015-09-01

    We investigated whether Aluminum (Al) doping tunes band gap energy level as well as selective cytotoxicity of ZnO nanoparticles in human breast cancer cells (MCF-7). Pure and Al-doped ZnO nanoparticles were prepared by a simple sol-gel method. Characterization study confirmed the formation of single phase of AlxZn1-xO nanocrystals with the size range of 33-55 nm. Al-doping increased the band gap energy of ZnO nanoparticles (from 3.51 eV for pure to 3.87 eV for Al-doped ZnO). Al-doping also enhanced the cytotoxicity and oxidative stress response of ZnO nanoparticles in MCF-7 cells. The IC50 for undoped ZnO nanoparticles was 44 μg/ml while for the Al-doped ZnO counterparts was 31 μg/ml. Up-regulation of apoptotic genes (e.g. p53, bax/bcl2 ratio, caspase-3 & caspase-9) along with loss of mitochondrial membrane potential suggested that Al-doped ZnO nanoparticles induced apoptosis in MCF-7 cells through mitochondrial pathway. Importantly, Al-doping did not change the benign nature of ZnO nanoparticles towards normal cells suggesting that Al-doping improves the selective cytotoxicity of ZnO nanoparticles toward MCF-7 cells without affecting the normal cells. Our results indicated a novel approach through which the inherent selective cytotoxicity of ZnO nanoparticles against cancer cells can be further improved.

  7. Structural and magnetic properties of Tb implanted ZnO single crystals

    International Nuclear Information System (INIS)

    Zhou Shengqiang; Potzger, K.; Muecklich, A.; Eichhorn, F.; Helm, M.; Skorupa, W.; Fassbender, J.

    2008-01-01

    ZnO single crystals have been implanted with Tb ions. For an atomic concentration of 1.5%, annealing at 823 K leads to an increase of the saturation magnetization per implanted Tb ion up to 1.8 μ B at room temperature. Structural investigations revealed no secondary phase formation, but the out-diffusion of Tb. No significant evidence is found for Tb substituting Zn sites either in the as-implanted or annealed samples. However, indications for the existence of a small amount of Tb nanoclusters however have been found using magnetization versus temperature measurements. The ferromagnetic properties disappear completely upon annealing at 1023 K. This behavior is related to the formation of oxide complexes or nanoparticles

  8. Photoluminescence quenching, structures, and photovoltaic properties of ZnO nanostructures decorated plasma grown single walled carbon nanotubes

    Energy Technology Data Exchange (ETDEWEB)

    Aïssa, Brahim, E-mail: brahim.aissa@mpbc.ca [University of Quebec, Centre Énergie, Matériaux et Télécommunications, INRS-EMT (Canada); Nedil, Mourad [Telebec Wireless Underground Communication Laboratory, UQAT (Canada); Belaidi, Abdelhak; Isaifan, Rima J. [Hamad Bin Khalifa University, Qatar Foundation, Qatar Environment and Energy Research Institute (Qatar); Bentouaf, Ali [University Hassiba Ben Bouali, Physics Department, Faculty of Science (Algeria); Fauteux, Christian; Therriault, Daniel [École Polytechnique de Montréal, Laboratory for Multiscale Mechanics (LM2), Mechanical Engineering Department (Canada)

    2017-05-15

    Zinc oxide (ZnO) nanostructures were successfully grown directly on single walled carbon nanotubes (SWCNT) template through the CO{sub 2} laser-induced chemical liquid deposition (LCLD) process. Photoluminescence (PL) of the deposited ZnO/SWCNT hybrid composites exhibits, at room temperature, a narrow near UV band located at 390 nm with no emission bands in the visible region, indicating a high degree of crystalline quality of the ZnO nanostructures. Moreover, when the relative SWCNT loads are varied within the composites, the PL intensity and the diffused optical reflectance diminish in comparison with those of ZnO alone, owing to the transfer of photo-excited electrons from ZnO to the SWCNT, and the enhancement of the optical absorbance, respectively. Finally, these ZnO/SWCNT hybrid composites are integrated into a heterojunction photovoltaic-based device, using PEDOT:PSS on ITO/glass substrate. The devices show an evident p–n junction behavior in the dark, and a clear I–V curve shift downward when illuminated with an open-circuit voltage of 1.1 V, a short circuit current density of 14.05 μA cm{sup −2}, and a fill factor of ∼35%. These results indicate that these composites fabricated via LCLD process could be promising for optoelectronic and energy-harvesting devices.

  9. Encapsulation of nanoparticles into single-crystal ZnO nanorods and microrods

    Directory of Open Access Journals (Sweden)

    Jinzhang Liu

    2014-04-01

    Full Text Available One-dimensional single crystal incorporating functional nanoparticles of other materials could be an interesting platform for various applications. We studied the encapsulation of nanoparticles into single-crystal ZnO nanorods by exploiting the crystal growth of ZnO in aqueous solution. Two types of nanodiamonds with mean diameters of 10 nm and 40 nm, respectively, and polymer nanobeads with size of 200 nm have been used to study the encapsulation process. It was found that by regrowing these ZnO nanorods with nanoparticles attached to their surfaces, a full encapsulation of nanoparticles into nanorods can be achieved. We demonstrate that our low-temperature aqueous solution growth of ZnO nanorods do not affect or cause degradation of the nanoparticles of either inorganic or organic materials. This new growth method opens the way to a plethora of applications combining the properties of single crystal host and encapsulated nanoparticles. We perform micro-photoluminescence measurement on a single ZnO nanorod containing luminescent nanodiamonds and the spectrum has a different shape from that of naked nanodiamonds, revealing the cavity effect of ZnO nanorod.

  10. Encapsulation of nanoparticles into single-crystal ZnO nanorods and microrods.

    Science.gov (United States)

    Liu, Jinzhang; Notarianni, Marco; Rintoul, Llew; Motta, Nunzio

    2014-01-01

    One-dimensional single crystal incorporating functional nanoparticles of other materials could be an interesting platform for various applications. We studied the encapsulation of nanoparticles into single-crystal ZnO nanorods by exploiting the crystal growth of ZnO in aqueous solution. Two types of nanodiamonds with mean diameters of 10 nm and 40 nm, respectively, and polymer nanobeads with size of 200 nm have been used to study the encapsulation process. It was found that by regrowing these ZnO nanorods with nanoparticles attached to their surfaces, a full encapsulation of nanoparticles into nanorods can be achieved. We demonstrate that our low-temperature aqueous solution growth of ZnO nanorods do not affect or cause degradation of the nanoparticles of either inorganic or organic materials. This new growth method opens the way to a plethora of applications combining the properties of single crystal host and encapsulated nanoparticles. We perform micro-photoluminescence measurement on a single ZnO nanorod containing luminescent nanodiamonds and the spectrum has a different shape from that of naked nanodiamonds, revealing the cavity effect of ZnO nanorod.

  11. Group one impurities in single crystalline Zinc Oxide

    OpenAIRE

    Johansen, Klaus Magnus Håland

    2011-01-01

    Zinc Oxide (ZnO) has been used as a material in many different technologies from pharmaceuticals to electronics. This exciting material can also be utilized as a wide band gap semiconductor for application in optoelectronic devices. The availability of Zn, the possibility to grow single crystal bulk material and the exitonic binding energy of 60 meV makes this material especially interesting. Even though the material has been studied already since the late 1920s there are still some fundament...

  12. Emission characteristics of electrically- and optically-pumped single ZnO micro-spherical crystal

    Science.gov (United States)

    Nakamura, D.; Shimogaki, T.; Tetsuyama, N.; Fusazaki, K.; Mizokami, Y.; Higashihata, M.; Ikenoue, H.; Okada, T.

    2014-03-01

    Zinc oxide (ZnO) nano/microstructures have been attractive as the building blocks for the efficient opto-electronic devices in the ultraviolet (UV) region. We have succeeded in growing the ZnO micro/nanosphere by a simple laser ablation in the air, and therefore we have obtained UV lasing from the sphere under optical pumping. Recently, large size of several 10 micrometer ZnO microspheres were grown using Nd:YAG laser without Q-switching, and ZnO microsphere/p-GaN heterojunction were fabricated to obtain the electroluminescence (EL) from the microsphere by electrical pumping. Room-temperature EL in near-UV region with peak wavelength of 400 nm is observed under forward bias.

  13. Single and multi-layered core-shell structures based on ZnO nanorods obtained by aerosol assisted chemical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Sáenz-Trevizo, A.; Amézaga-Madrid, P.; Pizá-Ruiz, P.; Antúnez-Flores, W.; Ornelas-Gutiérrez, C.; Miki-Yoshida, M., E-mail: mario.miki@cimav.edu.mx

    2015-07-15

    Core–shell nanorod structures were prepared by a sequential synthesis using an aerosol assisted chemical vapor deposition technique. Several samples consisting of ZnO nanorods were initially grown over TiO{sub 2} film-coated borosilicate glass substrates, following the synthesis conditions reported elsewhere. Later on, a uniform layer consisting of individual Al, Ni, Ti or Fe oxides was grown onto ZnO nanorod samples forming the so-called single MO{sub x}/ZnO nanorod core–shell structures, where MO{sub x} was the metal oxide shell. Additionally, a three-layer core–shell sample was developed by growing Fe, Ti and Fe oxides alternately, onto the ZnO nanorods. The microstructure of the core–shell materials was characterized by grazing incidence X-ray diffraction, scanning and transmission electron microscopy. Energy dispersive X-ray spectroscopy was employed to corroborate the formation of different metal oxides. X-ray diffraction outcomes for single core–shell structures showed solely the presence of ZnO as wurtzite and TiO{sub 2} as anatase. For the multi-layered shell sample, the existence of Fe{sub 2}O{sub 3} as hematite was also detected. Morphological observations suggested the existence of an outer material grown onto the nanorods and further microstructural analysis by HR-STEM confirmed the development of core–shell structures in all cases. These studies also showed that the individual Al, Fe, Ni and Ti oxide layers are amorphous; an observation that matched with X-ray diffraction analysis where no apparent extra oxides were detected. For the multi-layered sample, the development of a shell consisting of three different oxide layers onto the nanorods was found. Overall results showed that no alteration in the primary ZnO core was produced during the growth of the shells, indicating that the deposition technique used herein was and it is suitable for the synthesis of homogeneous and complex nanomaterials high in quality and purity. In addition

  14. Enhanced photocatalytic performance of ZnO nanostructures by electrochemical hybridization with graphene oxide

    Science.gov (United States)

    Pruna, A.; Wu, Z.; Zapien, J. A.; Li, Y. Y.; Ruotolo, A.

    2018-05-01

    Synthesis of zinc oxide (ZnO) nanostructures is reported by electrochemical deposition from an aqueous electrolyte in presence of graphene oxide (GO) with varying oxidation degree. The properties of hybrids were investigated by scanning electron microscopy, X-ray diffraction, Raman, Fourier-Transform Infrared and X-ray photoelectron spectroscopy techniques and photocatalytic measurements. The results indicated the electrodeposition of ZnO in presence of GO with increased oxygen content led to marked differences in the morphology while Raman measurements indicated an increased defect level both in the ZnO and the electrochemically reduced GO (ErGO) within the hybrids. The decrease in C/O atomic ratio of GO (from 0.79 to 0.71) employed for the electrodeposition of ZnO resulted in an increase in photocatalytic efficiency for methylene blue degradation under UV irradiation from 4-folds to 10-folds with respect to non-hybridized ZnO. The observed synergetic effect of cathodic deposition potential and oxygen content in GO towards improving the photocatalytic activity of immobilized ZnO is expected to contribute to further development of more effective deposition approaches for the preparation of high performance hybrid nanostructures.

  15. Characterization of Zinc Oxide (ZnO) piezoelectric properties for Surface Acoustic Wave (SAW) device

    Science.gov (United States)

    Rosydi Zakaria, Mohd; Johari, Shazlina; Hafiz Ismail, Mohd; Hashim, Uda

    2017-11-01

    In fabricating Surface Acoustic Wave (SAW) biosensors device, the substrate is one of important factors that affected to performance device. there are many types of piezoelectric substrate in the markets and the cheapest is zinc Oxide substrate. Zinc Oxide (ZnO) with its unique properties can be used as piezoelectric substrate along with SAW devices for detection of DNA in this research. In this project, ZnO thin film is deposited onto silicon oxide substrate using electron beam evaporation (E-beam) and Sol-Gel technique. Different material structure is used to compare the roughness and best piezoelectric substrate of ZnO thin film. Two different structures of ZnO target which are pellet and granular are used for e-beam deposition and one sol-gel liquid were synthesize and compared. Parameter for thickness of ZnO e-beam deposition is fixed to a 0.1kÅ for both materials structure and sol-gel was coat using spin coat technique. After the process is done, samples are annealed at temperature of 500°C for 2 hours. The structural properties of effect of post annealing using different material structure of ZnO are studied using Atomic Force Microscopic (AFM) for surface morphology and X-ray Diffraction (XRD) for phase structure.

  16. Synthesis and characterization of single-phase Mn-doped ZnO

    Science.gov (United States)

    Chattopadhyay, S.; Dutta, S.; Banerjee, A.; Jana, D.; Bandyopadhyay, S.; Chattopadhyay, S.; Sarkar, A.

    2009-05-01

    Different samples of Zn 1-xMn xO series have been prepared using conventional solid-state sintering method. We identified up to what extent doping will enable us to synthesize single-phase polycrystalline Mn-doped ZnO sample, which is one of the prerequisites for dilute magnetic semiconductor, and we have analyzed its some other physical aspects. In synthesizing the samples, proportion of Mn varies from 1 to 5 at%. However, the milling time varied (6, 12, 24, 48 and 96 h) only for 2 at% Mn-doped samples while for other samples (1, 3, 4 and 5 at% Mn doped) the milling time has been fixed to 96 h. Room-temperature X-ray diffraction (XRD) data reveal that all of the prepared samples up to 3 at% of Mn doping exhibit wurtzite-type structure, and no segregation of Mn and/or its oxides has been found. The 4 at% Mn-doped samples show a weak peak of ZnMn 2O 4 apart from the other usual peaks of ZnO and the intensity of this impurity peak has been further increased for 5 at% of Mn doping. So beyond 3 at% doping, single-phase behavior is destroyed. Band gap for all the 2 at% Mn-doped samples has been estimated to be between 3.21 and 3.19 eV and the reason for this low band gap values has been explained through the grain boundary trapping model. The room-temperature resistivity measurement shows an increase of resistivity up to 48 h of milling and with further milling it saturates. The defect state of these samples has been investigated using the positron annihilation lifetime (PAL) spectroscopy technique. Here all the relevant lifetime parameters of positron i.e. free annihilation ( τ1) at defect site ( τ2) and average ( τav) increases with milling time.

  17. Synthesis and characterization of single-phase Mn-doped ZnO

    International Nuclear Information System (INIS)

    Chattopadhyay, S.; Dutta, S.; Banerjee, A.; Jana, D.; Bandyopadhyay, S.; Chattopadhyay, S.; Sarkar, A.

    2009-01-01

    Different samples of Zn 1-x Mn x O series have been prepared using conventional solid-state sintering method. We identified up to what extent doping will enable us to synthesize single-phase polycrystalline Mn-doped ZnO sample, which is one of the prerequisites for dilute magnetic semiconductor, and we have analyzed its some other physical aspects. In synthesizing the samples, proportion of Mn varies from 1 to 5 at%. However, the milling time varied (6, 12, 24, 48 and 96 h) only for 2 at% Mn-doped samples while for other samples (1, 3, 4 and 5 at% Mn doped) the milling time has been fixed to 96 h. Room-temperature X-ray diffraction (XRD) data reveal that all of the prepared samples up to 3 at% of Mn doping exhibit wurtzite-type structure, and no segregation of Mn and/or its oxides has been found. The 4 at% Mn-doped samples show a weak peak of ZnMn 2 O 4 apart from the other usual peaks of ZnO and the intensity of this impurity peak has been further increased for 5 at% of Mn doping. So beyond 3 at% doping, single-phase behavior is destroyed. Band gap for all the 2 at% Mn-doped samples has been estimated to be between 3.21 and 3.19 eV and the reason for this low band gap values has been explained through the grain boundary trapping model. The room-temperature resistivity measurement shows an increase of resistivity up to 48 h of milling and with further milling it saturates. The defect state of these samples has been investigated using the positron annihilation lifetime (PAL) spectroscopy technique. Here all the relevant lifetime parameters of positron i.e. free annihilation (τ 1 ) at defect site (τ 2 ) and average (τ av ) increases with milling time.

  18. A flexible UV nanosensor based on reduced graphene oxide decorated ZnO nanostructures

    Science.gov (United States)

    Wang, Zhenxing; Zhan, Xueying; Wang, Yajun; Muhammad, Safdar; Huang, Ying; He, Jun

    2012-03-01

    A low-cost, compatible with flexible electronics, high performance UV sensor has been achieved from a reduced graphene oxide (RGO) decorated hydrangea-like ZnO film on a PDMS substrate. The hydrangea-like ZnO UV sensor has the best UV sensing performance among devices made of three kinds of ZnO nanostructures synthesized by a hydrothermal method, and demonstrated a dramatic enhancement in on/off ratio and photoresponse current by introducing an appropriate weight ratio of RGO. The on/off ratio of the 0.05% RGO/ZnO sensor increases almost one order of magnitude compared to that of a pristine hydrangea-like ZnO UV sensor. While for the 5% RGO decorated ZnO sensor, the photoresponse current reaches as high as ~1 μA and exceeds 700 times that of a ZnO UV sensor. These results indicate that RGO is an appropriate material to enhance the performance of ZnO nanostructure UV sensors based on its unique features, especially the high optical transparency and excellent electronic conductivity. Our findings will make RGO/ZnO nanohybrids extraordinarily promising in optoelectronics, flexible electronics and sensor applications.

  19. Fabrication and characterization of Zinc Oxide (ZnO) nanoparticle by sol-gel method

    International Nuclear Information System (INIS)

    Siswanto; Akwalia, Putri Riski; Rochman, Nurul T.

    2017-01-01

    Currently, nanomaterial is an interestingfield of study. This is due to its chemical and physical properties that are superior to that of large-sized materials. One nanomaterial widely studied is zinc oxide (ZnO). In this study, a synthesis of ZnO nanoparticles made by Sol-Gel method was conducted. The process parameters used are variations in pH, in increasing order, of 7; 8; 9; 10; 11; and 12. There are two principal reactions to produce a compound oxide, namely hydrolysis and condensation. NaOH is an agent for the hydrolysis of (CH 3 COO) 2 Zn resultingin Zn (OH) 2 . Subsequently, condensation produces ZnO. Calcination was carried out at a temperature of 80 ° C for 1 hour. The ccharacterization of the samples showed that the condition of pH 12 produced the best sample with a size of 73.8 nm and ZnO percentage of 100%. Although pH 7 produced a particle size of 1.3 nm, the percentage of ZnO formed was only 42.9%. The calcination process was performed to remove CH 3 COONa. However, the process can lead to aggregation of ZnO particles to each other, which increases the particle size. (paper)

  20. Single sheet iron oxides

    DEFF Research Database (Denmark)

    Yin, Zhou

    profile with reversible reduction and oxidation, suggesting the formation of FeII-OH/O-FeIII clusters as that in GRs were formed on the ITO electrode (trichloroethylene (TCE), tetrachloride (CT) and 4-chlorophenol are used to test...

  1. High-performance photoresponse from single-walled carbon nanotube-zinc oxide heterojunctions

    International Nuclear Information System (INIS)

    Chang, Jingbo; Najeeb, Choolakadavil Khalid; Lee, Jae-Hyeok; Lee, Minsu; Kim, Jae-Ho

    2011-01-01

    Photoactive materials consisting of single-walled carbon nanotube (SWNT)-zinc oxide (ZnO) heterojunctions targeted for optoelectronic applications are investigated in terms of photoresponse and photovoltaic effects. The devices based on SWNT-ZnO heterojunction films are fabricated by two step processes: first, a well aligned SWNT monolayer is deposited on an oxide substrate by the Langmuir-Blodgett (LB) technique; then a ZnO film prepared by filtration of ZnO nanowire solution is transferred onto the SWNT film to form SWNT-ZnO junctions. The SWNT-ZnO heterojunction demonstrates faster photoresponse time (2.75 s) up to 18 times and photovoltaic efficiency (1.33 nA) up to 4 times higher than that of only a ZnO device. Furthermore, the mechanisms of UV sensitivity enhancement and photovoltaic effects are explained according to the high electron mobility in the SWNT-ZnO heterojunctions.

  2. Fabricating ZnO single microwire light-emitting diode with transparent conductive ITO film

    International Nuclear Information System (INIS)

    Xu, Yingtian; Dai, Jun; Shi, Zhifeng; Long, Beihong; Wu, Bin; Cai, Xupu; Chu, Xianwei; Du, Guotong; Zhang, Baolin; Yin, Jingzhi

    2014-01-01

    In this paper, n-ZnO single microwire/p + -Si heterojunction LEDs are fabricated using the transparent conductive ITO film as an electrode. A distinct UV emission resulting from free exciton recombination in a ZnO single microwire is observed in the electroluminescence. Size difference of ZnO single microwire shows significant influence on emission efficiency. The EL spectra of n-ZnO single microwire/p-Si heterostructure exhibited relatively stronger UV emission which was compared with the EL spectra of n-ZnO single nanowire/p-Si heterostructure and n-ZnO film/p-Si heterostructure, respectively. - Highlights: • The ZnO microwires were synthesized with a vapor phase transport method. • ZnO single microwire/Si LEDs were fabricated using the ITO film as an electrode. • The EL spectra had been compared with n-ZnO film/p-Si heterostructure. • The EL spectra had been compared with n-ZnO single nanowire/p-Si heterostructure

  3. Photoelectrochemical Stability and Alteration Products of n-Type Single-Crystal ZnO Photoanodes

    Directory of Open Access Journals (Sweden)

    I. E. Paulauskas

    2011-01-01

    Full Text Available The photoelectrochemical stability and surface-alteration characteristics of doped and undoped n-type ZnO single-crystal photoanode electrodes were investigated. The single-crystal ZnO photoanode properties were analyzed using current-voltage measurements plus spectral and time-dependent quantum-yield methods. These measurements revealed a distinct anodic peak and an accompanying cathodic surface degradation process at negative potentials. The features of this peak depended on time and the NaOH concentration in the electrolyte, but were independent of the presence of electrode illumination. Current measurements performed at the peak indicate that charging and discharging effects are apparently taking place at the semiconductor/electrolyte interface. This result is consistent with the significant reactive degradation that takes place on the ZnO single crystal photoanode surface and that ultimately leads to the reduction of the ZnO surface to Zn metal. The resulting Zn-metal reaction products create unusual, dendrite-like, surface alteration structural features that were analyzed using x-ray diffraction, energy-dispersive analysis, and scanning electron microscopy. ZnO doping methods were found to be effective in increasing the n-type character of the crystals. Higher doping levels result in smaller depletion widths and lower quantum yields, since the minority carrier diffusion lengths are very short in these materials.

  4. Positron annihilation lifetime and photoluminescence studies on single crystalline ZnO

    Energy Technology Data Exchange (ETDEWEB)

    Sarkar, A [Department of Physics, Bangabasi Morning College, 19 Rajkumar Chakraborty Sarani, Kolkata 700 009 (India); Chakrabarti, Mahuya [Department of Physics, University of Calcutta, 92 Acharya Prafulla Chandra Road, Kolkata 700009 (India); Ray, S K [Department of Physics and Meteorology, Indian Institute of Technology, Kharagpur (India); Bhowmick, D; Sanyal, D, E-mail: dirtha@vecc.gov.in [Variable Energy Cyclotron Centre, 1/AF, Bidhannagar, Kolkata 700064 (India)

    2011-04-20

    The room temperature positron annihilation lifetime for single crystalline ZnO has been measured as 164 {+-} 1 ps. The single component lifetime value is very close to but higher than the theoretically predicted value of {approx} 154 ps. Photoluminescence study (at 10 K) indicates the presence of hydrogen and other defects, mainly acceptor related, in the crystal. Defects related to a lower open volume than zinc vacancies, presumably a complex with two hydrogen atoms, are the major trapping sites in the sample. The bulk positron lifetime in ZnO is expected to be a little less than 164 ps.

  5. Positron annihilation lifetime and photoluminescence studies on single crystalline ZnO

    Science.gov (United States)

    Sarkar, A.; Chakrabarti, Mahuya; Ray, S. K.; Bhowmick, D.; Sanyal, D.

    2011-04-01

    The room temperature positron annihilation lifetime for single crystalline ZnO has been measured as 164 ± 1 ps. The single component lifetime value is very close to but higher than the theoretically predicted value of ~ 154 ps. Photoluminescence study (at 10 K) indicates the presence of hydrogen and other defects, mainly acceptor related, in the crystal. Defects related to a lower open volume than zinc vacancies, presumably a complex with two hydrogen atoms, are the major trapping sites in the sample. The bulk positron lifetime in ZnO is expected to be a little less than 164 ps.

  6. Positron annihilation lifetime and photoluminescence studies on single crystalline ZnO

    International Nuclear Information System (INIS)

    Sarkar, A; Chakrabarti, Mahuya; Ray, S K; Bhowmick, D; Sanyal, D

    2011-01-01

    The room temperature positron annihilation lifetime for single crystalline ZnO has been measured as 164 ± 1 ps. The single component lifetime value is very close to but higher than the theoretically predicted value of ∼ 154 ps. Photoluminescence study (at 10 K) indicates the presence of hydrogen and other defects, mainly acceptor related, in the crystal. Defects related to a lower open volume than zinc vacancies, presumably a complex with two hydrogen atoms, are the major trapping sites in the sample. The bulk positron lifetime in ZnO is expected to be a little less than 164 ps.

  7. Modulating the size of ZnO nanorods on SiO2 substrates by incorporating reduced graphene oxide into the seed layer solution

    Directory of Open Access Journals (Sweden)

    Tzu-Yi Yu

    2017-06-01

    Full Text Available In this research, reduced graphene oxide was incorporated into the ZnO seed layer to modulate the rod diameter of ZnO nanorods (NRs during solgel/hydrothermal growth. To characterize the reduced graphene oxide incorporated ZnO NRs, multiple material analysis techniques including field-emission scanning electron microscopy, surface contact angle measurements, X-ray diffraction, and photoluminescence were used to explore distinct properties of these size modulatable NRs. Results indicate ZnO NRs with smaller diameters could be observed with more reduced graphene oxide added into the ZnO seed layer. Furthermore, better crystallinity, higher hydrophobicity and lower defect concentration could be obtained with more amount of reduced graphene oxide added into the ZnO seed layer. The modulatable reduced graphene oxide-incorporated ZnO NRs growth is promising for future ZnO NRs based nanodevice applications.

  8. Room temperature strong coupling effects from single ZnO nanowire microcavity

    KAUST Repository

    Das, Ayan; Heo, Junseok; Bayraktaroglu, Adrian; Guo, Wei; Ng, Tien Khee; Phillips, Jamie; Ooi, Boon S.; Bhattacharya, Pallab

    2012-01-01

    Strong coupling effects in a dielectric microcavity with a single ZnO nanowire embedded in it have been investigated at room temperature. A large Rabi splitting of ?100 meV is obtained from the polariton dispersion and a non

  9. Constructing MnO{sub 2}/single crystalline ZnO nanorod hybrids with enhanced photocatalytic and antibacterial activity

    Energy Technology Data Exchange (ETDEWEB)

    Yu, Weiwei [College of Physics and Electronic Science, Changsha University of Science and Technology, Changsha 410114 (China); Liu, Tiangui, E-mail: tianguiliu@gmail.com [College of Physics and Microelectronics Science, Hunan University, Changsha 410082 (China); Cao, Shiyi; Wang, Chen [College of Physics and Electronic Science, Changsha University of Science and Technology, Changsha 410114 (China); Chen, Chuansheng, E-mail: 1666423158@qq.com [College of Physics and Electronic Science, Changsha University of Science and Technology, Changsha 410114 (China)

    2016-07-15

    In order to improve the photocatalytic and antibacterial activity of ZnO nanorods, ZnO nanorods decorated with MnO{sub 2} nanoparticles (MnO{sub 2}/ZnO nanorod hybrids) were prepared by using microwave assisted coprecipitation method under the influence of hydrogen peroxide, and the structure, photocatalytic activity and antibacterial property of the products were studied. Experimental results indicated that MnO{sub 2} nanoparticles are decorated on the surface of single crystalline ZnO nanorods. Moreover, the resultant MnO{sub 2}/ZnO nanorod hybrids have been proven to possess good photocatalytic and antibacterial activity, which their degradated efficiency for Rhodamin B (RhB) is twice as the pure ZnO nanorods. Enhancement for photocatalytic and antibacterial activity is mainly attributed to the low band gap energy and excellent electrochemical properties of MnO{sub 2} nanoparticles. - Graphical abstract: The MnO{sub 2}/single crystalline ZnO nanorods hybrids, which MnO{sub 2} nanoparticles are loaded on the surface of ZnO nanorods, were prepared by the step-by-step precipitation method under the assistance of ammonia and hydrogen peroxide. Display Omitted - Highlights: • MnO{sub 2}/ZnO nanorod hybrids were prepared by the step-by-step assembly method. • Single crystalline ZnO nanorods can be decorated by MnO{sub 2} nanoparticles. • MnO{sub 2}/ZnO nanorod hybrids possess good photocatalytic and antibacterial activity. • MnO{sub 2} can improve the photocatalytic activity of ZnO nanorods under visible light.

  10. Life cycle assessment of facile microwave-assisted zinc oxide (ZnO) nanostructures

    CSIR Research Space (South Africa)

    Papadaki, D

    2017-05-01

    Full Text Available The life cycle assessment of several zinc oxide (ZnO) nanostructures, fabricated by a facile microwave technique, is presented. Key synthesis parameters such as annealing temperature, varied from 90 °C to 220 °C, and microwave power, varied from 110...

  11. Zn nanoparticle formation in FIB irradiated single crystal ZnO

    Science.gov (United States)

    Pea, M.; Barucca, G.; Notargiacomo, A.; Di Gaspare, L.; Mussi, V.

    2018-03-01

    We report on the formation of Zn nanoparticles induced by Ga+ focused ion beam on single crystal ZnO. The irradiated materials have been studied as a function of the ion dose by means of atomic force microscopy, scanning electron microscopy, Raman spectroscopy and transmission electron microscopy, evidencing the presence of Zn nanoparticles with size of the order of 5-30 nm. The nanoparticles are found to be embedded in a shallow amorphous ZnO matrix few tens of nanometers thick. Results reveal that ion beam induced Zn clustering occurs producing crystalline particles with the same hexagonal lattice and orientation of the substrate, and could explain the alteration of optical and electrical properties found for FIB fabricated and processed ZnO based devices.

  12. Photovoltaic device on a single ZnO nanowire p–n homojunction

    International Nuclear Information System (INIS)

    Cho, Hak Dong; Zakirov, Anvar S; Yuldashev, Shavkat U; Kang, Tae Won; Ahn, Chi Won; Yeo, Yung Kee

    2012-01-01

    A photovoltaic device was successfully grown solely based on the single ZnO p–n homojunction nanowire. The ZnO nanowire p–n diode consists of an as-grown n-type segment and an in situ arsenic-doped p-type segment. This p–n homojunction acts as a good photovoltaic cell, producing a photocurrent almost 45 times larger than the dark current under reverse-biased conditions. Our results demonstrate that the present ZnO p–n homojunction nanowire can be used as a self-powered ultraviolet photodetector as well as a photovoltaic cell, which can also be used as an ultralow electrical power source for nanoscale electronic, optoelectronic and medical devices. (paper)

  13. Homojunction p-n photodiodes based on As-doped single ZnO nanowire

    International Nuclear Information System (INIS)

    Cho, H. D.; Zakirov, A. S.; Yuldashev, Sh. U.; Kang, T. W.; Ahn, C. W.; Yeo, Y. K.

    2013-01-01

    Photovoltaic device was successfully grown solely based on the single ZnO p-n homojunction nanowire. The ZnO nanowire p-n diode consists of an as-grown n-type segment and an in-situ arsenic doped p-type segment. This p-n homojunction acts as a good photovoltaic cell, producing a photocurrent almost 45 times larger than the dark current under reverse-biased condition. Our results demonstrate that present ZnO p-n homojunction nanowire can be used as a self-powered ultraviolet photodetector as well as a photovoltaic cell, which can also be used as an ultralow electrical power source for nano-scale electronic, optoelectronic, and medical devices

  14. Atomic layer deposition grown composite dielectric oxides and ZnO for transparent electronic applications

    International Nuclear Information System (INIS)

    Gieraltowska, S.; Wachnicki, L.; Witkowski, B.S.; Godlewski, M.; Guziewicz, E.

    2012-01-01

    In this paper, we report on transparent transistor obtained using laminar structure of two high-k dielectric oxides (hafnium dioxide, HfO 2 and aluminum oxide, Al 2 O 3 ) and zinc oxide (ZnO) layer grown at low temperature (60 °C–100 °C) using Atomic Layer Deposition (ALD) technology. Our research was focused on the optimization of technological parameters for composite layers Al 2 O 3 /HfO 2 /Al 2 O 3 for thin film transistor structures with ZnO as a channel and a gate layer. We elaborate on the ALD growth of these oxides, finding that the 100 nm thick layers of HfO 2 and Al 2 O 3 exhibit fine surface flatness and required amorphous microstructure. Growth parameters are optimized for the monolayer growth mode and maximum smoothness required for gating.

  15. Single-Step Antimicrobial And Moisture Management Finishing Of Pc Fabric Using Zno Nanoparticles

    Directory of Open Access Journals (Sweden)

    Ashraf Munir

    2017-09-01

    Full Text Available Functionalization of textile fabrics with metal oxide nanoparticles can be used to add antibacterial and moisture management properties to them. Current work focuses on the development of these properties on polyester/cotton woven fabrics by treating them with zinc oxide nanoparticles for workwear and sportswear applications. Zinc oxide nanoparticles, prepared by sol-gel method, were applied on fabric samples, which were then tested for antibacterial and moisture management properties using standard test methods AATCC 147 with Staphylococcus aureus and AATCC 195, respectively. It was found that application of ZnO nanoparticles improved both these properties with smaller particle imparting larger effects on both of them.

  16. Influence of Nanosized Silicon Oxide on the Luminescent Properties of ZnO Nanoparticles

    Directory of Open Access Journals (Sweden)

    Vitaliy Shvalagin

    2016-01-01

    Full Text Available For practical use of nanosized zinc oxide as the phosphor its luminescence quantum yields should be maximized. The aim of this work was to enhance luminescent properties of ZnO nanoparticles and obtain high-luminescent ZnO/SiO2 composites using simpler approaches to colloidal synthesis. The luminescence intensity of zinc oxide nanoparticles was increased about 3 times by addition of silica nanocrystals to the source solutions during the synthesis of ZnO nanoparticles. Then the quantum yield of luminescence of the obtained ZnO/SiO2 composites is more than 30%. Such an impact of silica is suggested to be caused by the distribution of ZnO nanocrystals on the surface of silica, which reduces the probability of separation of photogenerated charges between the zinc oxide nanoparticles of different sizes, and as a consequence, there is a significant increase of the luminescence intensity of ZnO nanoparticles. This way of increasing nano-ZnO luminescence intensity facilitates its use in a variety of devices, including optical ultraviolet and visible screens, luminescent markers, antibacterial coatings, luminescent solar concentrators, luminescent inks for security printing, and food packaging with abilities of informing consumers about the quality and safety of the packaged product.

  17. Synthesis and characterization of single-phase Mn-doped ZnO

    Energy Technology Data Exchange (ETDEWEB)

    Chattopadhyay, S.; Dutta, S.; Banerjee, A.; Jana, D. [Department of Physics, University of Calcutta, 92 Acharya Prafulla Chandra Road, Kolkata 700 009, West Bengal (India); Bandyopadhyay, S., E-mail: sbaphy@caluniv.ac.i [Department of Physics, University of Calcutta, 92 Acharya Prafulla Chandra Road, Kolkata 700 009, West Bengal (India); Chattopadhyay, S. [Department of Physics, Taki Government College, Taki 743 429, West Bengal (India); Sarkar, A. [Department of Physics, Bangabasi Morning College, 19 Rajkumar Chakraborty Sarani, Kolkata 700 009, West Bengal (India)

    2009-05-01

    Different samples of Zn{sub 1-x}Mn{sub x}O series have been prepared using conventional solid-state sintering method. We identified up to what extent doping will enable us to synthesize single-phase polycrystalline Mn-doped ZnO sample, which is one of the prerequisites for dilute magnetic semiconductor, and we have analyzed its some other physical aspects. In synthesizing the samples, proportion of Mn varies from 1 to 5 at%. However, the milling time varied (6, 12, 24, 48 and 96 h) only for 2 at% Mn-doped samples while for other samples (1, 3, 4 and 5 at% Mn doped) the milling time has been fixed to 96 h. Room-temperature X-ray diffraction (XRD) data reveal that all of the prepared samples up to 3 at% of Mn doping exhibit wurtzite-type structure, and no segregation of Mn and/or its oxides has been found. The 4 at% Mn-doped samples show a weak peak of ZnMn{sub 2}O{sub 4} apart from the other usual peaks of ZnO and the intensity of this impurity peak has been further increased for 5 at% of Mn doping. So beyond 3 at% doping, single-phase behavior is destroyed. Band gap for all the 2 at% Mn-doped samples has been estimated to be between 3.21 and 3.19 eV and the reason for this low band gap values has been explained through the grain boundary trapping model. The room-temperature resistivity measurement shows an increase of resistivity up to 48 h of milling and with further milling it saturates. The defect state of these samples has been investigated using the positron annihilation lifetime (PAL) spectroscopy technique. Here all the relevant lifetime parameters of positron i.e. free annihilation (tau{sub 1}) at defect site (tau{sub 2}) and average (tau{sub av}) increases with milling time.

  18. Origin of the defects-induced ferromagnetism in un-doped ZnO single crystals

    Science.gov (United States)

    Zhan, Peng; Xie, Zheng; Li, Zhengcao; Wang, Weipeng; Zhang, Zhengjun; Li, Zhuoxin; Cheng, Guodong; Zhang, Peng; Wang, Baoyi; Cao, Xingzhong

    2013-02-01

    We clarified, in this Letter, that in un-doped ZnO single crystals after thermal annealing in flowing argon, the defects-induced room-temperature ferromagnetism was originated from the surface defects and specifically, from singly occupied oxygen vacancies denoted as F+, by the optical and electrical properties measurements as well as positron annihilation analysis. In addition, a positive linear relationship was observed between the ferromagnetism and the F+ concentration, which is in support with the above clarification.

  19. Optical properties of Mn doped ZnO films and wires synthesized by thermal oxidation of ZnMn alloy

    Energy Technology Data Exchange (ETDEWEB)

    Sima, M., E-mail: msima@infim.ro [National Institute of Materials Physics, 105bis Atomistilor Street, 077125 Magurele (Romania); Mihut, L. [National Institute of Materials Physics, 105bis Atomistilor Street, 077125 Magurele (Romania); Vasile, E. [University “Politehnica”of Bucharest, Faculty of Applied Chemistry and Material Science, Department of Oxide Materials and Nanomaterials, No. 1-7 Gh. Polizu Street, 011061 Bucharest (Romania); Sima, Ma.; Logofatu, C. [National Institute of Materials Physics, 105bis Atomistilor Street, 077125 Magurele (Romania)

    2015-09-01

    Mn doped ZnO films and wires, having different manganese concentrations were synthesized by thermal oxidation of the corresponding ZnMn alloy films and wires electrodeposited on a gold substrate. Structural and optical properties were addressed with scanning electron microscopy, X-ray diffraction (XRD), Raman scattering and photoluminescence (PL). To estimate the manganese concentration in Mn doped ZnO films, X-ray photoelectron spectroscopy was used. XRD patterns indicate that the incorporation of Mn{sup 2+} ions into the Zn{sup 2+} site of ZnO lattice takes place. Quenching of the ZnO PL appears due to Mn{sup 2+} ions in the ZnO lattice. Moreover, a significant decrease in the green emission of ZnO is reported in the case of the Mn doped ZnO wire array with a Mn concentration of 1.45%. The wurtzite ZnO has a total of 12 phonon modes, namely, one longitudinal acoustic (LA), two transverse acoustic (TA), three longitudinal optical (LO), and six transverse optical branches. Compared to the undoped ZnO, a gradual up-shift of the Raman lines assigned to the 2LA and A{sub 1} (LO) vibrational modes, from 482 and 567 cm{sup −1} to 532 and 580 cm{sup −1}, respectively, takes place for the Mn doped ZnO films having a Mn concentration between 2 and 15%. Additionally, in the case of the Mn doped ZnO films with 7 and 15% Mn concentration, Raman spectra show the appearance and increase in the relative intensity of the ZnO Raman line assigned to the TA + LO vibrational mode in the 600–750 cm{sup −1} spectral range. For the Mn-doped ZnO wires, the presence of the Raman line peaking at 527 cm{sup −1} confirms the insertion of Mn{sup 2+} ions in ZnO lattice. - Highlights: • Mn doped ZnO films and wires grown by thermal oxidation of ZnMn alloy • Incorporation of Mn{sup 2+} ions into Zn{sup 2+} site of ZnO lattice • Appearance of a strong Raman line in the spectral range 600–800 cm{sup −1} at high Mn concentration • Compensation of the oxygen vacancy at higher

  20. Optical properties of Mn doped ZnO films and wires synthesized by thermal oxidation of ZnMn alloy

    International Nuclear Information System (INIS)

    Sima, M.; Mihut, L.; Vasile, E.; Sima, Ma.; Logofatu, C.

    2015-01-01

    Mn doped ZnO films and wires, having different manganese concentrations were synthesized by thermal oxidation of the corresponding ZnMn alloy films and wires electrodeposited on a gold substrate. Structural and optical properties were addressed with scanning electron microscopy, X-ray diffraction (XRD), Raman scattering and photoluminescence (PL). To estimate the manganese concentration in Mn doped ZnO films, X-ray photoelectron spectroscopy was used. XRD patterns indicate that the incorporation of Mn 2+ ions into the Zn 2+ site of ZnO lattice takes place. Quenching of the ZnO PL appears due to Mn 2+ ions in the ZnO lattice. Moreover, a significant decrease in the green emission of ZnO is reported in the case of the Mn doped ZnO wire array with a Mn concentration of 1.45%. The wurtzite ZnO has a total of 12 phonon modes, namely, one longitudinal acoustic (LA), two transverse acoustic (TA), three longitudinal optical (LO), and six transverse optical branches. Compared to the undoped ZnO, a gradual up-shift of the Raman lines assigned to the 2LA and A 1 (LO) vibrational modes, from 482 and 567 cm −1 to 532 and 580 cm −1 , respectively, takes place for the Mn doped ZnO films having a Mn concentration between 2 and 15%. Additionally, in the case of the Mn doped ZnO films with 7 and 15% Mn concentration, Raman spectra show the appearance and increase in the relative intensity of the ZnO Raman line assigned to the TA + LO vibrational mode in the 600–750 cm −1 spectral range. For the Mn-doped ZnO wires, the presence of the Raman line peaking at 527 cm −1 confirms the insertion of Mn 2+ ions in ZnO lattice. - Highlights: • Mn doped ZnO films and wires grown by thermal oxidation of ZnMn alloy • Incorporation of Mn 2+ ions into Zn 2+ site of ZnO lattice • Appearance of a strong Raman line in the spectral range 600–800 cm −1 at high Mn concentration • Compensation of the oxygen vacancy at higher Mn concentration in ZnO lattice

  1. Catalyst free growth of ZnO nanowires on graphene and graphene oxide and its enhanced photoluminescence and photoresponse

    International Nuclear Information System (INIS)

    Biroju, Ravi K; Giri, P K; Tilak, Nikhil; Rajender, Gone; Dhara, S

    2015-01-01

    We demonstrate the graphene assisted catalyst free growth of ZnO nanowires (NWs) on chemical vapor deposited (CVD) and chemically processed graphene buffer layers at a relatively low growth temperature (580 °C) in the presence and absence of ZnO seed layers. In the case of CVD graphene covered with rapid thermal annealed ZnO buffer layer, the growth of vertically aligned ZnO NWs takes place, while the direct growth on CVD graphene, chemically derived graphene (graphene oxide and graphene quantum dots) without ZnO seed layer resulted in randomly oriented sparse ZnO NWs. Growth mechanism was studied from high resolution transmission electron microscopy and Raman spectroscopy of the hybrid structure. Further, we demonstrate strong UV, visible photoluminescence (PL) and enhanced photoconductivity (PC) from the CVD graphene–ZnO NWs hybrids as compared to the ZnO NWs grown without the graphene buffer layer. The evolution of crystalinity in ZnO NWs grown with ZnO seed layer and graphene buffer layer is correlated with the Gaussian line shape of UV and visible PL. This is further supported by the strong Raman mode at 438 cm −1 significant for the wurtzite phase of the ZnO NWs grown on different graphene substrates. The effect of the thickness of ZnO seed layers and the role of graphene buffer layers on the aligned growth of ZnO NWs and its enhanced PC are investigated systematically. Our results demonstrate the catalyst free growth and superior performance of graphene–ZnO NW hybrid UV photodetectors as compared to the bare ZnO NW based photodetectors. (paper)

  2. Paramagnetism and antiferromagnetic interactions in single-phase Fe-implanted ZnO

    CERN Document Server

    Pereira, Lino Miguel da Costa; Correia, João Guilherme; Van Bael, M J; Temst, Kristiaan; Vantomme, André; Araújo, João Pedro

    2013-01-01

    As the intrinsic origin of the high temperature ferromagnetism often observed in wide-gap dilute magnetic semiconductors becomes increasingly debated, there is a growing need for comprehensive studies on the single-phase region of the phase diagram of these materials. Here we report on the magnetic and structural properties of Fe-doped ZnO prepared by ion implantation of ZnO single crystals. A detailed structural characterization shows that the Fe impurities substitute for Zn in ZnO in a wurtzite Zn$_{1−x}$Fe$_{x}$O phase which is coherent with the ZnO host. In addition, the density of beam-induced defects is progressively decreased by thermal annealing up to 900$^{\\circ}$C, from highly disordered after implantation to highly crystalline upon subsequent annealing. Based on a detailed analysis of the magnetometry data, we demonstrate that isolated Fe impurities occupying Zn substitutional sites behave as localized paramagnetic moments down to 2$^{\\circ}$K, irrespective of the Fe concentration and the density...

  3. High-resolution photoluminescence spectroscopy of Sn-doped ZnO single crystals

    International Nuclear Information System (INIS)

    Kumar, E. Senthil; Mohammadbeigi, F.; Boatner, L.A.; Watkins, S.P.

    2016-01-01

    Group IV donors in ZnO are poorly understood, despite evidence that they are effective n-type dopants. Here we present high-resolution photoluminescence (PL) spectroscopy studies of unintentionally doped and Sn-doped ZnO single crystals grown by the chemical vapor transport method. Doped samples showed greatly increased emission from the I 10 bound exciton transition that was recently proven to be related to the incorporation of Sn impurities based on radio-isotope studies. The PL linewidths are exceptionally sharp for these samples, enabling a clear identification of several donor species. Temperature-dependent PL measurements of the I 10 line emission energy and intensity dependence reveal a behavior that is similar to other shallow donors in ZnO. Ionized donor bound-exciton and two-electron satellite transitions of the I 10 transition are unambiguously identified and yield a donor binding energy of 71 meV. In contrast to recent reports of Ge-related donors in ZnO, the spectroscopic binding energy for the Sn-related donor bound exciton follows a linear relationship with donor binding energy (Haynes rule) similar to recently observed carbon related donors, and confirming the shallow nature of this defect center, which was recently attributed to a Sn Zn double donor compensated by an unknown single acceptor.

  4. Graphene oxide-modified ZnO particles: synthesis, characterization, and antibacterial properties

    Directory of Open Access Journals (Sweden)

    Zhong LL

    2015-08-01

    Full Text Available Linlin Zhong, Kyusik Yun Department of Bionanotechnology, Gachon University, Gyeonggi-do, Republic of Korea Abstract: Nanosized ZnO particles with diameters of 15 nm were prepared with a solution precipitation method at low cost and high yield. The synthesis of the particles was functionalized by the organic solvent dimethylformamide, and the particles were covalently bonded to the surface of graphene oxide. The morphology of the graphene oxide sheets and ZnO particles was confirmed with field emission scanning electron microscopy and biological atomic force microscopy. Fourier transform infrared spectroscopy and X-ray diffraction were used to analyze the physical and chemical properties of the ZnO/graphene oxide composites that differed from those of the individual components. Enhanced electrochemical properties were detected with cyclic voltammetry, with a redox peak of the composites at 0.025 mV. Excellent antibacterial activity of ZnO/graphene oxide composites was observed with a microdilution method in which minimum inhibitory concentrations of 6.25 µg/mL for Escherichia coli and Salmonella typhimurium, 12.5 µg/mL for Bacillus subtilis, and 25 µg/mL for Enterococcus faecalis. After further study of the antibacterial mechanism, we concluded that a vast number of reactive oxygen species formed on the surface of composites, improving antibacterial properties. Keywords: graphene oxide, ZnO, characterization, antibacterial property

  5. Effect of cerium oxide addition on electrical properties of ZnO

    Energy Technology Data Exchange (ETDEWEB)

    Ibrahim, D.M. [National Research Center, Dokki, Giza (Egypt). Dept. of Ceramics; Mounir, M. [Dept. of Physics, Cairo Univ., Giza (Egypt); Mahgoub, A.S. [Cairo Univ., Giza (Egypt). Dept. of Chemistry; Turky, G. [Dept. of Physics, National Research Center, Dokki, Giza (Egypt); El-Desouky, O.A. [Cer. Cleopatra Co., Ramadan City (Egypt)

    2002-07-01

    Mixtures of ZnO and Ce{sub 6} O{sub 11} as additive were prepared by solid state reaction from the calcined oxides with the following proportions: 0.03, 0.08, 0.1, 0.2 and 0.4 mole. Disc specimens 1.2 cm 5 cm in diameter and 0.3 cm thickness were processed under a force of 70 kN and fired at 1150 C/ 30 minutes. XRD revealed the presence of limited solid solution of cerium in ZnO, as evident from the shift in the peaks [0.03-0.04 A ] up to 0.1 mole addition and remains constant. SEM revealed the presence of inter-granular phase. EDAX showed it to be a mixture of ZnO and Ce{sub 6}O{sub 11}. Also cerium was detected in the ZnO grains confirming the XRD results. RCL circuit was used to measure the capacitance and resistance at different frequencies at room temperature. The dielectric constant and conductivity were calculated. The change in resistivity with temperature was followed up to 523 K. The change in dielectric strength with temperature at spot frequency of 10 kHz is demonstrated. The electrical conductivity was found to increase with the proportion of cerium oxide up to 0.2 mole then decreased. (orig.)

  6. Photoluminescence and positron annihilation spectroscopic investigation on a H+ irradiated ZnO single crystal

    Science.gov (United States)

    Sarkar, A.; Chakrabarti, Mahuya; Sanyal, D.; Bhowmick, D.; Dechoudhury, S.; Chakrabarti, A.; Rakshit, Tamita; Ray, S. K.

    2012-08-01

    Low temperature photoluminescence and room temperature positron annihilation spectroscopy have been employed to investigate the defects incorporated by 6 MeV H+ ions in a hydrothermally grown ZnO single crystal. Prior to irradiation, the emission from donor bound excitons is at 3.378 eV (10 K). The irradiation creates an intense and narrow emission at 3.368 eV (10 K). The intensity of this peak is nearly four times that of the dominant near band edge peak of the pristine crystal. The characteristic features of the 3.368 eV emission indicate its origin as a ‘hydrogen at oxygen vacancy’ type defect. The positron annihilation lifetime measurement reveals a single component lifetime spectrum for both the unirradiated (164 ± 1 ps) and irradiated crystal (175 ± 1 ps). It reflects the fact that the positron lifetime and intensity of the new irradiation driven defect species are a little higher compared to those in the unirradiated crystal. However, the estimated defect concentration, even considering the high dynamic defect annihilation rate in ZnO, comes out to be ˜4 × 1017 cm-3 (using SRIM software). This is a very high defect concentration compared to the defect sensitivity of positron annihilation spectroscopy. A probable reason is the partial filling of the incorporated vacancies (positron traps), which in ZnO are zinc vacancies. The positron lifetime of ˜175 ps (in irradiated ZnO) is consistent with recent theoretical calculations for partially hydrogen-filled zinc vacancies in ZnO. Passivation of oxygen vacancies by hydrogen is also reflected in the photoluminescence results. A possible reason for such vacancy filling (at both Zn and O sites) due to irradiation has also been discussed.

  7. Photoluminescence and positron annihilation spectroscopic investigation on a H+ irradiated ZnO single crystal

    International Nuclear Information System (INIS)

    Sarkar, A; Chakrabarti, Mahuya; Sanyal, D; Bhowmick, D; Dechoudhury, S; Chakrabarti, A; Rakshit, Tamita; Ray, S K

    2012-01-01

    Low temperature photoluminescence and room temperature positron annihilation spectroscopy have been employed to investigate the defects incorporated by 6 MeV H + ions in a hydrothermally grown ZnO single crystal. Prior to irradiation, the emission from donor bound excitons is at 3.378 eV (10 K). The irradiation creates an intense and narrow emission at 3.368 eV (10 K). The intensity of this peak is nearly four times that of the dominant near band edge peak of the pristine crystal. The characteristic features of the 3.368 eV emission indicate its origin as a ‘hydrogen at oxygen vacancy’ type defect. The positron annihilation lifetime measurement reveals a single component lifetime spectrum for both the unirradiated (164 ± 1 ps) and irradiated crystal (175 ± 1 ps). It reflects the fact that the positron lifetime and intensity of the new irradiation driven defect species are a little higher compared to those in the unirradiated crystal. However, the estimated defect concentration, even considering the high dynamic defect annihilation rate in ZnO, comes out to be ∼4 × 10 17 cm -3 (using SRIM software). This is a very high defect concentration compared to the defect sensitivity of positron annihilation spectroscopy. A probable reason is the partial filling of the incorporated vacancies (positron traps), which in ZnO are zinc vacancies. The positron lifetime of ∼175 ps (in irradiated ZnO) is consistent with recent theoretical calculations for partially hydrogen-filled zinc vacancies in ZnO. Passivation of oxygen vacancies by hydrogen is also reflected in the photoluminescence results. A possible reason for such vacancy filling (at both Zn and O sites) due to irradiation has also been discussed. (paper)

  8. Photoluminescence and positron annihilation spectroscopic investigation on a H(+) irradiated ZnO single crystal.

    Science.gov (United States)

    Sarkar, A; Chakrabarti, Mahuya; Sanyal, D; Bhowmick, D; Dechoudhury, S; Chakrabarti, A; Rakshit, Tamita; Ray, S K

    2012-08-15

    Low temperature photoluminescence and room temperature positron annihilation spectroscopy have been employed to investigate the defects incorporated by 6 MeV H(+) ions in a hydrothermally grown ZnO single crystal. Prior to irradiation, the emission from donor bound excitons is at 3.378 eV (10 K). The irradiation creates an intense and narrow emission at 3.368 eV (10 K). The intensity of this peak is nearly four times that of the dominant near band edge peak of the pristine crystal. The characteristic features of the 3.368 eV emission indicate its origin as a 'hydrogen at oxygen vacancy' type defect. The positron annihilation lifetime measurement reveals a single component lifetime spectrum for both the unirradiated (164 ± 1 ps) and irradiated crystal (175 ± 1 ps). It reflects the fact that the positron lifetime and intensity of the new irradiation driven defect species are a little higher compared to those in the unirradiated crystal. However, the estimated defect concentration, even considering the high dynamic defect annihilation rate in ZnO, comes out to be ∼4 × 10(17) cm(-3) (using SRIM software). This is a very high defect concentration compared to the defect sensitivity of positron annihilation spectroscopy. A probable reason is the partial filling of the incorporated vacancies (positron traps), which in ZnO are zinc vacancies. The positron lifetime of ∼175 ps (in irradiated ZnO) is consistent with recent theoretical calculations for partially hydrogen-filled zinc vacancies in ZnO. Passivation of oxygen vacancies by hydrogen is also reflected in the photoluminescence results. A possible reason for such vacancy filling (at both Zn and O sites) due to irradiation has also been discussed.

  9. Neutron monochromators of BeO, MgO and ZnO single crystals

    Energy Technology Data Exchange (ETDEWEB)

    Adib, M.; Habib, N. [Reactor Physics Department, NRC, AEAE, Cairo (Egypt); Bashter, I.I. [Physics Department, Faculty of Science, Zagazig University (Egypt); Morcos, H.N.; El-Mesiry, M.S. [Reactor Physics Department, NRC, AEAE, Cairo (Egypt); Mansy, M.S., E-mail: mohamedmansy_np@yahoo.com [Physics Department, Faculty of Science, Zagazig University (Egypt)

    2014-05-21

    The monochromatic features of BeO, MgO and ZnO single crystals are discussed in terms of orientation, mosaic spread, and thickness within the wavelength band from 0.05 up to 0.5 nm. A computer program MONO, written in “FORTRAN”, has been developed to carry out the required calculations. Calculation shows that a 5 mm thick MgO single crystal cut along its (2 0 0) plane having mosaic spread of 0.5° FWHM has the optimum parameters when it is used as a neutron monochromator. Moreover, at wavelengths shorter than 0.24 nm the reflected monochromatic neutrons are almost free from the higher order ones. The same features are seen with BeO (0 0 2) with less reflectivity than that of the former. Also, ZnO cut along its (0 0 2) plane is preferred over the others only at wavelengths longer than 0.20 nm. When the selected monochromatic wavelength is longer than 0.24 nm, the neutron intensities of higher orders from a thermal reactor flux are higher than those of the first-order one. For a cold reactor flux, the first order of BeO and MgO single crystals is free from the higher orders up to 0.4 nm, and ZnO at wavelengths up to 0.5 nm. - Highlights: • Monochromatic features of BeO, MgO and ZnO single crystals. • Calculations of neutron reflectivity using a computer program MONO. • Optimum mosaic spread, thickness and cutting plane of single crystals.

  10. Origins of low resistivity in Al ion-implanted ZnO bulk single crystals

    Science.gov (United States)

    Oga, T.; Izawa, Y.; Kuriyama, K.; Kushida, K.; Kinomura, A.

    2011-06-01

    The origins of low resistivity in Al ion-implanted ZnO bulk single crystals are studied by combining Rutherford backscattering spectroscopy (RBS), nuclear reaction analysis (NRA), photoluminescence (PL), and Van der Pauw methods. The Al-ion implantation (peak concentration: 2.6 × 1020cm-3) into ZnO is performed using a multiple-step energy. The resistivity decreases from ˜104 Ω cm for un-implanted ZnO to 1.4 × 10-1 Ω cm for as-implanted, and reaches 6.0 × 10-4 Ω cm for samples annealed at 1000 °C. RBS and NRA measurements for as-implanted ZnO suggest the existence of the lattice displacement of Zn (Zni) and O (Oi), respectively. After annealing at 1000 °C, the Zni related defects remain and the Oi related defects disappear. The origin of the low resistivity in the as-implanted sample is attributed to the Zni (˜30 meV [Look et al., Phys. Rev. Lett. 82, 2552 (1999)]). In contrast, the origin of the low resistivity in the sample annealed at 1000 °C is assigned to both of the Zni related defects and the electrically activated Al donor. A new PL emission appears at around 3.32 eV after annealing at 1000 °C, suggesting electrically activated Al donors.

  11. Synthesis, structural and optical properties of ZnO spindle/reduced graphene oxide composites with enhanced photocatalytic activity under visible light irradiation

    Science.gov (United States)

    Prabhu, S.; Pudukudy, M.; Sohila, S.; Harish, S.; Navaneethan, M.; Navaneethan, D.; Ramesh, R.; Hayakawa, Y.

    2018-05-01

    In the present work, spindle-shaped ZnO and reduced graphene oxide sheets were successfully synthesized by a hydrothermal method and then ZnO/r-GO composite was prepared by a direct solution mixing method. Various characterization results confirmed the interior and surface decoration of spindle-shaped ZnO on the reduced graphene oxide sheets. The phase formation, crystalline structure, morphology, surface states and optical properties were characterized using Powder X-ray diffraction (XRD), Field emission scanning electron microscopy (FESEM), Transmission electron microscopy (TEM), X-ray photoelectron spectroscopy (XPS), Fourier Transform Infrared Spectroscopy (FTIR) and UV-Vis spectroscopy. The X-ray diffraction analysis showed the formation of the hexagonal wurtzite crystalline structure of ZnO with high crystalline quality. The band gap of the ZnO/r-GO composite was found to be low (3.03eV) compared to the band gap of spindle shaped ZnO (3.13 eV), as calculated from optical studies. The spindle-like morphology of the single crystalline ZnO was clearly shown in the electron microscopic images. The chemical bonding and surface states of the samples were studied using XPS measurement. Moreover, a possible growth mechanism for the ZnO spindle was proposed. The catalytic activity of the as-synthesized samples was evaluated for the photodegradation of methylene blue under visible light irradiation. Among the synthesized samples, the ZnO/r-GO composite showed higher degradation efficiency of 93% and successfully reused for four consecutive run without any activity loss.

  12. Aloe vera mediated hydrothermal synthesis of reduced graphene oxide decorated ZnO nanocomposite: Luminescence and antioxidant properties

    Science.gov (United States)

    Kavyashree, D.; Nagabhushana, H.; Ananda Kumari, R.; Basavaraj, R. B.; Suresh, D.; Daruka Prasad, B.; Sharma, S. C.

    2016-05-01

    A zinc oxide/reduced graphene oxide (ZnO/rGO) nanocomposite was fabricated by facile hydrothermal route using Aloe vera gel as surfactant. The PL emission spectrum of the ZnO/rGO composite consists of four peaks at around 380, 394, 449 and 465nm. The PL intensity is found to diminish in ZnO-rGO composites rather than in pure ZnO, which was attributed to electron transfer from ZnO to rGO. A single intense glow curve was recorded in rGo-ZnO for a dose range of 1-8kGy. The TL response curve of rGO-ZnO is found to be a simple glow curve structure, linear dependence over a dose range of 1-8kGy. The obtained ZnO/rGO composite could provide a facile and eco-friendly method for the development of graphene-based nanocomposites with promising applications in radiation dosimetry and antioxidant activities.

  13. Nanosecond X-ray detector based on high resistivity ZnO single crystal semiconductor

    Energy Technology Data Exchange (ETDEWEB)

    Zhao, Xiaolong; He, Yongning, E-mail: yongning@mail.xjtu.edu.cn; Peng, Wenbo; Huang, Zhiyong; Qi, Xiaomeng; Pan, Zijian; Zhang, Wenting [School of Electronic and Information Engineering, Xi' an Jiaotong University, Xi' an 710049 (China); Chen, Liang; Liu, Jinliang; Zhang, Zhongbing; Ouyang, Xiaoping [Radiation Detection Research Center, Northwest Institute of Nuclear Technology, Xi' an 710024 (China)

    2016-04-25

    The pulse radiation detectors are sorely needed in the fields of nuclear reaction monitoring, material analysis, astronomy study, spacecraft navigation, and space communication. In this work, we demonstrate a nanosecond X-ray detector based on ZnO single crystal semiconductor, which emerges as a promising compound-semiconductor radiation detection material for its high radiation tolerance and advanced large-size bulk crystal growth technique. The resistivity of the ZnO single crystal is as high as 10{sup 13} Ω cm due to the compensation of the donor defects (V{sub O}) and acceptor defects (V{sub Zn} and O{sub i}) after high temperature annealing in oxygen. The photoconductive X-ray detector was fabricated using the high resistivity ZnO single crystal. The rise time and fall time of the detector to a 10 ps pulse electron beam are 0.8 ns and 3.3 ns, respectively, indicating great potential for ultrafast X-ray detection applications.

  14. Neutron monochromators of BeO, MgO and ZnO single crystals

    Science.gov (United States)

    Adib, M.; Habib, N.; Bashter, I. I.; Morcos, H. N.; El-Mesiry, M. S.; Mansy, M. S.

    2014-05-01

    The monochromatic features of BeO, MgO and ZnO single crystals are discussed in terms of orientation, mosaic spread, and thickness within the wavelength band from 0.05 up to 0.5 nm. A computer program MONO, written in “FORTRAN”, has been developed to carry out the required calculations. Calculation shows that a 5 mm thick MgO single crystal cut along its (2 0 0) plane having mosaic spread of 0.5° FWHM has the optimum parameters when it is used as a neutron monochromator. Moreover, at wavelengths shorter than 0.24 nm the reflected monochromatic neutrons are almost free from the higher order ones. The same features are seen with BeO (0 0 2) with less reflectivity than that of the former. Also, ZnO cut along its (0 0 2) plane is preferred over the others only at wavelengths longer than 0.20 nm. When the selected monochromatic wavelength is longer than 0.24 nm, the neutron intensities of higher orders from a thermal reactor flux are higher than those of the first-order one. For a cold reactor flux, the first order of BeO and MgO single crystals is free from the higher orders up to 0.4 nm, and ZnO at wavelengths up to 0.5 nm.

  15. Optical and structural properties of ZnO nanorods grown on graphene oxide and reduced graphene oxide film by hydrothermal method

    Energy Technology Data Exchange (ETDEWEB)

    Alver, U., E-mail: alver@ksu.edu.tr [Department of Physics, Kahramanmaras Sutcu Imam University, K. Maras 46100 (Turkey); Zhou, W.; Belay, A.B. [Nanoscience and Technology Center, University of Central Florida, Orlando, FL 32816 (United States); Florida Solar Energy Center, Cocoa, FL 32922 (United States); Krueger, R. [Nanoscience and Technology Center, University of Central Florida, Orlando, FL 32816 (United States); Davis, K.O.; Hickman, N.S. [Nanoscience and Technology Center, University of Central Florida, Orlando, FL 32816 (United States); Florida Solar Energy Center, Cocoa, FL 32922 (United States)

    2012-01-15

    ZnO nanorods were grown on graphene oxide (GO) and reduced graphene oxide (RGO) films with seed layers by using simple hydrothermal method. The GO films were deposited by spray coating and then annealed at 400 Degree-Sign C in argon atmosphere to obtain RGO films. The optical and structural properties of the ZnO nanorods were systematically studied by scanning electron microscopy (SEM), X-ray diffraction (XRD) and ultraviolet-visible spectroscopy. The XRD patterns and SEM images show that without a seed layer, no ZnO nanorod deposition occurs on GO or RGO films. Transmittance of ZnO nanorods grown on RGO films was measured to be approximately 83% at 550 nm. Furthermore, while transmittance of RGO films increases with ZnO nanorod deposition, transmittance of GO decreases.

  16. Photoactivity of N-doped ZnO nanoparticles in oxidative and reductive reactions

    Science.gov (United States)

    Oliveira, Jéssica A.; Nogueira, André E.; Gonçalves, Maria C. P.; Paris, Elaine C.; Ribeiro, Caue; Poirier, Gael Y.; Giraldi, Tania R.

    2018-03-01

    N-doped ZnO is a prospective material for photocatalytic reactions. However, only oxidative paths are well investigated in the literature. This paper describes a comparative study about ZnO and ZnO:N potential for oxidative and reductive reactions, probed by rhodamine B dye photodegradation and CO2 photoreduction. The materials were prepared by the polymeric precursor method, using urea as a nitrogen source, and different heat treatments were used to observe their effects on surface decontamination, crystallinity, particle sizes and shapes, and photocatalytic performance. ZnO and ZnO:N presented a wurtzite crystalline structure and nanometric-scale particles. Samples submitted to higher temperatures showed lower specific surface areas, but higher crystallinity and lower contents of species adsorbed on their surfaces. On the other hand, the photocatalysts annealed in shorter times presented smaller crystallite sizes and lower crystallinity. These factors influenced the photoactivity in both conditions, i.e., oxidation and reduction reactions, under the ultraviolet and visible light, indicating that structural factors influenced the adequate charge separation and consequent photocatalytic activity since the as-synthesized samples were versatile photocatalysts in both redox reactions.

  17. Characterisation of irradiation-induced defects in ZnO single crystals

    International Nuclear Information System (INIS)

    Prochazka, I; Cizek, J; Lukac, F; Melikhova, O; Valenta, J; Havranek, V; Anwand, W; Skuratov, V A; Strukova, T S

    2016-01-01

    Positron annihilation spectroscopy (PAS) combined with optical methods was employed for characterisation of defects in the hydrothermally grown ZnO single crystals irradiated by 167 MeV Xe 26+ ions to fluences ranged from 3×10 12 to 1×10 14 cm -2 . The positron lifetime (LT), Doppler broadening as well as slow-positron implantation spectroscopy (SPIS) techniques were involved. The ab-initio theoretical calculations were utilised for interpretation of LT results. The optical transmission and photoluminescence measurements were conducted, too. The virgin ZnO crystal exhibited a single component LT spectrum with a lifetime of 182 ps which is attributed to saturated positron trapping in Zn vacancies associated with hydrogen atoms unintentionally introduced into the crystal during the crystal growth. The Xe ion irradiated ZnO crystals have shown an additional component with a longer lifetime of ≈ 360 ps which comes from irradiation-induced larger defects equivalent in size to clusters of ≈10 to 12 vacancies. The concentrations of these clusters were estimated on the basis of combined LT and SPIS data. The PAS data were correlated with irradiation induced changes seen in the optical spectroscopy experiments. (paper)

  18. Characterisation of irradiation-induced defects in ZnO single crystals

    Science.gov (United States)

    Prochazka, I.; Cizek, J.; Lukac, F.; Melikhova, O.; Valenta, J.; Havranek, V.; Anwand, W.; Skuratov, V. A.; Strukova, T. S.

    2016-01-01

    Positron annihilation spectroscopy (PAS) combined with optical methods was employed for characterisation of defects in the hydrothermally grown ZnO single crystals irradiated by 167 MeV Xe26+ ions to fluences ranged from 3×1012 to 1×1014 cm-2. The positron lifetime (LT), Doppler broadening as well as slow-positron implantation spectroscopy (SPIS) techniques were involved. The ab-initio theoretical calculations were utilised for interpretation of LT results. The optical transmission and photoluminescence measurements were conducted, too. The virgin ZnO crystal exhibited a single component LT spectrum with a lifetime of 182 ps which is attributed to saturated positron trapping in Zn vacancies associated with hydrogen atoms unintentionally introduced into the crystal during the crystal growth. The Xe ion irradiated ZnO crystals have shown an additional component with a longer lifetime of ≈ 360 ps which comes from irradiation-induced larger defects equivalent in size to clusters of ≈10 to 12 vacancies. The concentrations of these clusters were estimated on the basis of combined LT and SPIS data. The PAS data were correlated with irradiation induced changes seen in the optical spectroscopy experiments.

  19. Single crystalline ZnO nanorods grown by a simple hydrothermal process

    Energy Technology Data Exchange (ETDEWEB)

    Pei, L.Z., E-mail: lzpei1977@163.com [School of Materials Science and Engineering, Institute of Molecular Engineering and Applied Chemistry, Key Lab of Materials Science and Processing of Anhui Province, Anhui University of Technology, Ma' anshan, Anhui 243002 (China); Zhao, H.S. [School of Materials Science and Engineering, Institute of Molecular Engineering and Applied Chemistry, Key Lab of Materials Science and Processing of Anhui Province, Anhui University of Technology, Ma' anshan, Anhui 243002 (China); Tan, W. [Henkel Huawei Electronics Co. Ltd., Lian' yungang, Jiangsu 222006 (China); Yu, H.Y. [School of Materials Science and Engineering, Institute of Molecular Engineering and Applied Chemistry, Key Lab of Materials Science and Processing of Anhui Province, Anhui University of Technology, Ma' anshan, Anhui 243002 (China); Chen, Y.W. [Department of Materials Science, Fudan University, Shanghai 200433 (China); Zhang Qianfeng [School of Materials Science and Engineering, Institute of Molecular Engineering and Applied Chemistry, Key Lab of Materials Science and Processing of Anhui Province, Anhui University of Technology, Ma' anshan, Anhui 243002 (China)

    2009-09-15

    Single crystalline ZnO nanorods with wurtzite structure have been prepared by a simple hydrothermal process. The microstructure and composition of the products were studied by X-ray diffraction (XRD), scanning electron microscopy (SEM), transmission electron microscopy (TEM), high-resolution TEM, energy dispersive X-ray spectrum (EDS) and Raman spectrum. The nanorods have diameters ranging from 100 nm to 800 nm and length of longer than 10 {mu}m. Raman peak at 437.8 cm{sup -1} displays the characteristic peak of wurtzite ZnO. Photoluminescence (PL) spectrum shows a blue light emission at 441 nm, which is related to radiative recombination of photo-generated holes with singularly ionized oxygen vacancies.

  20. Single crystalline ZnO nanorods grown by a simple hydrothermal process

    International Nuclear Information System (INIS)

    Pei, L.Z.; Zhao, H.S.; Tan, W.; Yu, H.Y.; Chen, Y.W.; Zhang Qianfeng

    2009-01-01

    Single crystalline ZnO nanorods with wurtzite structure have been prepared by a simple hydrothermal process. The microstructure and composition of the products were studied by X-ray diffraction (XRD), scanning electron microscopy (SEM), transmission electron microscopy (TEM), high-resolution TEM, energy dispersive X-ray spectrum (EDS) and Raman spectrum. The nanorods have diameters ranging from 100 nm to 800 nm and length of longer than 10 μm. Raman peak at 437.8 cm -1 displays the characteristic peak of wurtzite ZnO. Photoluminescence (PL) spectrum shows a blue light emission at 441 nm, which is related to radiative recombination of photo-generated holes with singularly ionized oxygen vacancies.

  1. ZnO based transparent conductive oxide films with controlled type of conduction

    Energy Technology Data Exchange (ETDEWEB)

    Zaharescu, M., E-mail: mzaharescu@icf.ro [Institute of Physical Chemistry “Ilie Murgulescu”, Romanian Academy, 202 Splaiul Independentei, 060021 Bucharest (Romania); Mihaiu, S., E-mail: smihaiu@icf.ro [Institute of Physical Chemistry “Ilie Murgulescu”, Romanian Academy, 202 Splaiul Independentei, 060021 Bucharest (Romania); Toader, A. [Institute of Physical Chemistry “Ilie Murgulescu”, Romanian Academy, 202 Splaiul Independentei, 060021 Bucharest (Romania); Atkinson, I., E-mail: irinaatkinson@yahoo.com [Institute of Physical Chemistry “Ilie Murgulescu”, Romanian Academy, 202 Splaiul Independentei, 060021 Bucharest (Romania); Calderon-Moreno, J.; Anastasescu, M.; Nicolescu, M.; Duta, M.; Gartner, M. [Institute of Physical Chemistry “Ilie Murgulescu”, Romanian Academy, 202 Splaiul Independentei, 060021 Bucharest (Romania); Vojisavljevic, K.; Malic, B. [Institute Jožef Stefan, Ljubljana (Slovenia); Ivanov, V.A.; Zaretskaya, E.P. [State Scientific and Production Association “Scientific-Practical Materials Research Center of the National Academy of Science Belarus, P. Brovska str.19, 220072, Minsk (Belarus)

    2014-11-28

    The transparent conductive oxide films with controlled type of conduction are of great importance and their preparation is intensively studied. In our work, the preparation of such films based on doped ZnO was realized in order to achieve controlled type of conduction and high concentration of the charge carriers. Sol–gel method was used for films preparation and several dopants were tested (Sn, Li, Ni). Multilayer deposition was performed on several substrates: SiO{sub 2}/Si wafers, silica-soda-lime and/or silica glasses. The structural and morphological characterization of the obtained films were done by scanning electron microscopy, X-ray diffraction, X-ray fluorescence, X-ray photoelectron spectroscopy and atomic force microscopy respectively, while spectroscopic ellipsometry and transmittance measurements were done for determination of optical properties. The selected samples with the best structural, morphological and optical properties were subjected to electrical measurement (Hall and Seebeck effect). In all studied cases, samples with good adherence and homogeneous morphology as well as monophasic wurtzite type structure were obtained. The optical constants (refractive index and extinction coefficient) were calculated from spectroscopic ellipsometry data using Cauchy model. Films with n- or p-type conduction were obtained depending on the composition, number of deposition and thermal treatment temperature. - Highlights: • Transparent conductive ZnO based thin films were prepared by the sol–gel method. • Controlled type of conduction is obtained in (Sn, Li) doped and Li-Ni co-doped ZnO films. • Hall and Seebeck measurements proved the p-type conductivity for Li-Ni co-doped ZnO films. • The p-type conductivity was maintained even after 4-months of storage. • Influence of dopant- and substrate-type on the ZnO films properties was established.

  2. Thermally induced growth of ZnO nanocrystals on mixed metal oxide surfaces.

    Science.gov (United States)

    Inayat, Alexandra; Makky, Ayman; Giraldo, Jose; Kuhnt, Andreas; Busse, Corinna; Schwieger, Wilhelm

    2014-06-23

    An in situ method for the growth of ZnO nanocrystals on Zn/Al mixed metal oxide (MMO) surfaces is presented. The key to this method is the thermal treatment of Zn/Al layered double hydroxides (Zn/Al LDHs) in the presence of nitrate anions, which results in partial demixing of the LDH/MMO structure and the subsequent crystallization of ZnO crystals on the surface of the forming MMO layers. In a first experimental series, thermal treatment of Zn/Al LDHs with different fractions of nitrate and carbonate in the interlayer space was examined by thermogravimetry coupled with mass spectrometry (TG-MS) and in situ XRD. In a second experimental series, Zn/Al LDHs with only carbonate in the interlayer space were thermally treated in the presence of different amounts of an external nitrate source (NH4NO3). All obtained Zn/Al MMO samples were analysed by electron microscopy, nitrogen physisorption and powder X-ray diffraction. The gas phase formed during nitrate decomposition turned out to be responsible for the formation of crystalline ZnO nanoparticles. Accordingly, both interlayer nitrate and the presence of ammonium nitrate led to the formation of supported ZnO nanocrystals with mean diameters between 100 and 400 nm, and both methods offer the possibility to tailor the amount and size of the ZnO crystals by means of the amount of nitrate. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  3. In situ reduced graphene oxide interlayer for improving electrode performance in ZnO nanorods

    Science.gov (United States)

    Venkatesan, A.; Ramesha, C. K.; Kannan, E. S.

    2016-06-01

    The effect of reduced graphene oxide (RGO) thin film on the transport characteristics of vertically aligned zinc oxide nanorods (ZnO NRs) grown on ITO substrate was studied. GO was uniformly drop casted on ZnO NRs as a passivation layer and then converted into RGO by heating it at 60 °C prior to metal electrode deposition. This low temperature reduction is facilitated by the thermally excited electrons from ZnI interstitial sites (~30 meV). Successful reduction of GO was ascertained from the increased disorder band (D) intensity in the Raman spectra. Temperature (298 K-10 K) dependent transport measurements of RGO-ZnO NRs indicate that the RGO layer not only acts as a short circuiting inhibitor but also reduces the height of the potential barrier for electron tunneling. This is confirmed from the temperature dependent electrical characteristics which revealed a transition of carrier transport from thermionic emission at high temperature (T  >  100 K) to tunneling at low temperature (T  <  100 K) across the interface. Our technique is the most promising approach for making reliable electrical contacts on vertically aligned ZnO NRs and improving the reproducibility of device characteristics.

  4. Properties and local environment of p-type and photoluminescent rare earths implanted into ZnO single crystals

    CERN Document Server

    Rita, EMC; Wahl, U; Soares, JC

    This thesis presents an experimental study of the local environment of p-type and Rare- Earth dopants implanted in ZnO single-crystals (SCs). Various nuclear and bulk property techniques were combined in the following evaluations: Implantation damage annealing was evaluated in ZnO SCs implanted with Fe, Sr and Ca. P-type dopants Cu and Ag implanted ZnO SCs were studied revealing that the solubility of Cu in substituting Zn is considerably higher than that of Ag. These results are discussed within the scope of the ZnO p-type doping problematic with these elements. Experimental proofs of the As “anti-site” behavior in ZnO were for the first time attained, i.e., the majority of As atoms are substitutional at the Zn site (SZn), possibly surrounded by two Zn vacancies (VZn). This reinforces the theoretical prediction that As acts as an acceptor in ZnO via the AsZn-2VZn complex formation. The co-doping of ZnO SC with In (donor) and As (acceptor) was addressed. The most striking result is the possible In-As “p...

  5. Defect studies of ZnO single crystals electrochemically doped with hydrogen

    Science.gov (United States)

    Čížek, J.; Žaludová, N.; Vlach, M.; Daniš, S.; Kuriplach, J.; Procházka, I.; Brauer, G.; Anwand, W.; Grambole, D.; Skorupa, W.; Gemma, R.; Kirchheim, R.; Pundt, A.

    2008-03-01

    Various defect studies of hydrothermally grown (0001) oriented ZnO crystals electrochemically doped with hydrogen are presented. The hydrogen content in the crystals is determined by nuclear reaction analysis and it is found that already 0.3at.% H exists in chemically bound form in the virgin ZnO crystals. A single positron lifetime of 182ps is detected in the virgin crystals and attributed to saturated positron trapping at Zn vacancies surrounded by hydrogen atoms. It is demonstrated that a very high amount of hydrogen (up to ˜30at.%) can be introduced into the crystals by electrochemical doping. More than half of this amount is chemically bound, i.e., incorporated into the ZnO crystal lattice. This drastic increase of the hydrogen concentration is of marginal impact on the measured positron lifetime, whereas a contribution of positrons annihilated by electrons belonging to O-H bonds formed in the hydrogen doped crystal is found in coincidence Doppler broadening spectra. The formation of hexagonal shape pyramids on the surface of the hydrogen doped crystals by optical microscopy is observed and discussed.

  6. Spatial mapping of exciton lifetimes in single ZnO nanowires

    Directory of Open Access Journals (Sweden)

    J. S. Reparaz

    2013-07-01

    Full Text Available We investigate the spatial dependence of the exciton lifetimes in single ZnO nanowires. We have found that the free exciton and bound exciton lifetimes exhibit a maximum at the center of nanowires, while they decrease by 30% towards the tips. This dependence is explained by considering the cavity-like properties of the nanowires in combination with the Purcell effect. We show that the lifetime of the bound-excitons scales with the localization energy to the power of 3/2, which validates the model of Rashba and Gurgenishvili at the nanoscale.

  7. Trapping effects and acoustoelectric current saturation in ZnO single crystals

    DEFF Research Database (Denmark)

    Mosekilde, Erik

    1970-01-01

    Measurements of current-voltage characteristics for ZnO single crystals at temperatures between 77 and 640 °K are reported. Because of the buildup of an intense acoustic flux, a strong current saturation sets in when the trap-controlled electron drift velocity is equal to the velocity of sound....... The temperature dependence of the saturated current is discussed in terms of a trapping model which includes nonlinear trapping effects. Our results indicate the presence of a shallow-donor level with an ionization energy of 50 meV and a deep-donor level approximately 230 meV below the conduction-band edge...

  8. Morphology development and oriented growth of single crystalline ZnO nanorod

    International Nuclear Information System (INIS)

    Wu Lili; Wu Youshi; Lue Wei; Wei Huiying; Shi Yuanchang

    2005-01-01

    Single crystalline ZnO nanorods were achieved by the assembly of nanocrystallines in tens of nanometer under hydrothermal conditions with the assistance of surfactant cetyltrimethylammonium bromide (CTAB). The obtained nanorod has rough surface as a result of oriented attachment growth. Transmission electron microscope (TEM) images showed the morphology evolution of the nanorod at different reaction time. Defects were observed and porous structure was left after the assembly of hundreds of nanocrystalline building blocks. Effect of pH condition on the morphology of the nanorod was also investigated

  9. Synthesis of reduced graphene oxide intercalated ZnO quantum dots nanoballs for selective biosensing detection

    International Nuclear Information System (INIS)

    Chen, Jing; Zhao, Minggang; Li, Yingchun; Fan, Sisi; Ding, Longjiang; Liang, Jingjing; Chen, Shougang

    2016-01-01

    Highlights: • A MWCNTs/rGO/ZnO quantum dots intercalation nanoballs decorated 3D hierarchical architecture is fabricated on Ni foam. • Large numbers of ZnO quantum dots are intercalated by rGO sheets to construct hierarchical nanoballs. • Improved mechanical, kinetic and electrochemical properties are found. • The strong interfacial effect makes the material can be used for selective detection of dopamine, ascorbic acid and uric acid. - Abstract: ZnO quantum dots (QDs), reduced graphene oxide (rGO) and multi-walled carbon nanotubes (MWCNTs) are always used in sensors due to their excellent electrochemical characteristics. In this work, ZnO QDs were intercalated by rGO sheets with cross-linked MWCNTs to construct intercalation nanoballs. A MWCNTs/rGO/ZnO QDs 3D hierarchical architecture was fabricated on supporting Ni foam, which exhibited excellent mechanical, kinetic and electrochemical properties. The intercalation construction can introduce strong interfacial effects to improve the surface electronic state. The selectively determinate of uric acid, dopamine, and ascorbic acid by an electrode material using distinct applied potentials was realized.

  10. Synthesis of cadmium oxide doped ZnO nanostructures using electrochemical deposition

    International Nuclear Information System (INIS)

    Singh, Trilok; Pandya, D.K.; Singh, R.

    2011-01-01

    Research highlights: → Ternary ZnCdO alloy semiconductor nanostructures were grown using electrochemical deposition. → X-ray diffraction measurements showed that the nanostructures were of wurtzite structure and possessed a compressive stress along the c-axis direction. → The cut-off wavelength shifted from blue to red on account of the Cd incorporation in the ZnO and the average transmittance decreased by ∼31%. → The bandgap tuning for 4-16 at% Cd in the initial solution was achieved in the range of 3.08-3.32 eV (up to 0.24 eV). - Abstract: Ternary ZnCdO alloy semiconductor nanostructures were grown using electrochemical deposition. Crystalline nanostructures/nanorods with cadmium concentration ranging from 4 to 16 at% in the initial solution were electrodeposited on tin doped indium oxide (ITO) conducting glass substrates at a constant cathodic potential -0.9 V and subsequently annealed in air at 300 deg. C. X-ray diffraction measurements showed that the nanostructures were of wurtzite structure and possessed a compressive stress along the c-axis direction. The elemental composition of nanostructures was confirmed by energy dispersive spectroscopy (EDS). ZnO nanostructures were found to be highly transparent and had an average transmittance of 85% in the visible range of the spectrum. After the incorporation of Cd content into ZnO the average transmittance decreased and the bandgap tuning was also achieved.

  11. Synthesis of reduced graphene oxide intercalated ZnO quantum dots nanoballs for selective biosensing detection

    Energy Technology Data Exchange (ETDEWEB)

    Chen, Jing; Zhao, Minggang, E-mail: zhaomg@ouc.edu.cn; Li, Yingchun; Fan, Sisi; Ding, Longjiang; Liang, Jingjing; Chen, Shougang, E-mail: sgchen@ouc.edu.cn

    2016-07-15

    Highlights: • A MWCNTs/rGO/ZnO quantum dots intercalation nanoballs decorated 3D hierarchical architecture is fabricated on Ni foam. • Large numbers of ZnO quantum dots are intercalated by rGO sheets to construct hierarchical nanoballs. • Improved mechanical, kinetic and electrochemical properties are found. • The strong interfacial effect makes the material can be used for selective detection of dopamine, ascorbic acid and uric acid. - Abstract: ZnO quantum dots (QDs), reduced graphene oxide (rGO) and multi-walled carbon nanotubes (MWCNTs) are always used in sensors due to their excellent electrochemical characteristics. In this work, ZnO QDs were intercalated by rGO sheets with cross-linked MWCNTs to construct intercalation nanoballs. A MWCNTs/rGO/ZnO QDs 3D hierarchical architecture was fabricated on supporting Ni foam, which exhibited excellent mechanical, kinetic and electrochemical properties. The intercalation construction can introduce strong interfacial effects to improve the surface electronic state. The selectively determinate of uric acid, dopamine, and ascorbic acid by an electrode material using distinct applied potentials was realized.

  12. Experimental and theoretical study of CO adsorption on the surface of single phase hexagonally plate ZnO

    Energy Technology Data Exchange (ETDEWEB)

    Akbari, Amin; Firooz, Azam Anaraki [Chemistry Department, Faculty of Sciences, Shahid Rajaee Teacher Training University, PO Box 16785-163, Tehran (Iran, Islamic Republic of); Beheshtian, Javad, E-mail: j.beheshtian@srttu.edu [Chemistry Department, Faculty of Sciences, Shahid Rajaee Teacher Training University, PO Box 16785-163, Tehran (Iran, Islamic Republic of); Khodadadi, Abbas Ali [Oil and Gas Processing Center of Excellence, School of Chemical Engineering, University of Tehran, 11155-4563 Tehran (Iran, Islamic Republic of)

    2014-10-01

    Highlights: • Hexagonally plate ZnO microstructure was synthesized by a simple hydrothermal method. • HRTEM images indicated a single crystal with a [0 0 1] direction growth. • DFT calculations were performed to reveal structure and electronic properties of ZnO. • The CO sensor response was close to obtained theoretical results. - Abstract: A simple low temperature hydrothermal method has been investigated for synthesis of single phase hexagonally plate ZnO microstructure. The synthesized ZnO was characterized using scanning electron microscopy (SEM), transmission electron microscopy (TEM), X-ray diffraction (XRD) photoluminescence spectrum (PL) and ultraviolet and visible absorption spectroscopy (UV–vis) to investigate the surface morphology, crystallographic phase, optical properties and used as a sensor for detection of CO gas molecules. It was observed that the ZnO microstructures were uniform size, single phase and symmetrical, with a hexagonal shape and height of ∼250 nm. The optical band gap value of this sample was calculated to be about 3.22 eV, which show a red shift with theoretical method. High-resolution TEM images indicate that all the microstructures are single crystals with a [0 0 1] direction growth. We studied the gas response of this sample to 500 ppm CO over a temperature range of 200–400 °C and compared with theoretical results. Density functional theory (DFT) calculations were employed to investigate the structure and electronic properties of ZnO with simulating the adsorption process of CO gas on the ZnO (1 0 1) surface. The theoretical results were in good agreement with experimental results.

  13. Physical deoxygenation of graphene oxide paper surface and facile in situ synthesis of graphene based ZnO films

    International Nuclear Information System (INIS)

    Ding, Jijun; Wang, Minqiang; Zhang, Xiangyu; Ran, Chenxin; Shao, Jinyou; Ding, Yucheng

    2014-01-01

    In-situ sputtering ZnO films on graphene oxide (GO) paper are used to fabricate graphene based ZnO films. Crystal structure and surface chemical states are investigated. Results indicated that GO paper can be effectively deoxygenated by in-situ sputtering ZnO on them without adding any reducing agent. Based on the principle of radio frequency magnetron sputtering, we propose that during magnetron sputtering process, plasma streams contain large numbers of electrons. These electrons not only collide with argon atoms to produce secondary electrons but also they are accelerated to bombard the substrates (GO paper) resulting in effective deoxygenation of oxygen-containing functional groups. In-situ sputtering ZnO films on GO paper provide an approach to design graphene-semiconductor nanocomposites

  14. Boron doped ZnO embedded into reduced graphene oxide for electrochemical supercapacitors

    Energy Technology Data Exchange (ETDEWEB)

    Alver, Ü., E-mail: ualver@ktu.edu.tr [Karadeniz Technical University, Dept. of Metallurgical and Materials Engineering, 61080 Trabzon (Turkey); Tanrıverdi, A. [Kahramanmaras Sutcu Imam University, Department of Physics, 46100 Kahramanmaraş (Turkey)

    2016-08-15

    Highlights: • Boron doped ZnO particles are fabricated and embedded into reduced graphene oxide (RGO) by hydrothermal method. • RGO/ZnO:B composites are used as electrodes for supercapacitors. • Presence of boron in RGO/ZnO composites caused increasing the stability and specific capacitance of electrodes. - Abstract: In this work, reduced graphene oxide/boron doped zinc oxide (RGO/ZnO:B) composites were fabricated by a hydrothermal process and their electrochemical properties were investigated as a function of dopant concentration. First, boron doped ZnO (ZnO:B) particles was fabricated with different boron concentrations (5, 10, 15 and 20 wt%) and then ZnO:B particles were embedded into RGO sheets. The physical properties of sensitized composites were characterized by XRD and SEM. Characterization indicated that the ZnO:B particles with plate-like structure in the composite were dispersed on graphene sheets. The electrochemical properties of the RGO/ZnO:B composite were investigated through cyclic voltammetry, galvanostatic charge/discharge measurements in a 6 M KOH electrolyte. Electrochemical measurements show that the specific capacitance values of RGO/ZnO:B electrodes increase with increasing boron concentration. RGO/ZnO:B composite electrodes (20 wt% B) display the specific capacitance as high as 230.50 F/g at 5 mV/s, which is almost five times higher than that of RGO/ZnO (52.71 F/g).

  15. Boron doped ZnO embedded into reduced graphene oxide for electrochemical supercapacitors

    International Nuclear Information System (INIS)

    Alver, Ü.; Tanrıverdi, A.

    2016-01-01

    Highlights: • Boron doped ZnO particles are fabricated and embedded into reduced graphene oxide (RGO) by hydrothermal method. • RGO/ZnO:B composites are used as electrodes for supercapacitors. • Presence of boron in RGO/ZnO composites caused increasing the stability and specific capacitance of electrodes. - Abstract: In this work, reduced graphene oxide/boron doped zinc oxide (RGO/ZnO:B) composites were fabricated by a hydrothermal process and their electrochemical properties were investigated as a function of dopant concentration. First, boron doped ZnO (ZnO:B) particles was fabricated with different boron concentrations (5, 10, 15 and 20 wt%) and then ZnO:B particles were embedded into RGO sheets. The physical properties of sensitized composites were characterized by XRD and SEM. Characterization indicated that the ZnO:B particles with plate-like structure in the composite were dispersed on graphene sheets. The electrochemical properties of the RGO/ZnO:B composite were investigated through cyclic voltammetry, galvanostatic charge/discharge measurements in a 6 M KOH electrolyte. Electrochemical measurements show that the specific capacitance values of RGO/ZnO:B electrodes increase with increasing boron concentration. RGO/ZnO:B composite electrodes (20 wt% B) display the specific capacitance as high as 230.50 F/g at 5 mV/s, which is almost five times higher than that of RGO/ZnO (52.71 F/g).

  16. Giant coercivity in ferromagnetic Co doped ZnO single crystal thin film

    International Nuclear Information System (INIS)

    Loukya, B.; Negi, D.S.; Dileep, K.; Kumar, N.; Ghatak, Jay; Datta, R.

    2013-01-01

    The origin of ferromagnetism in ZnO doped with transition metal impurities has been discussed extensively and appeared to be a highly controversial and challenging topic in today's solid state physics. Magnetism observed in this system is generally weak and soft. We have grown Co:ZnO up to 30 at% Co in single crystal thin film form on c-plane sapphire. A composition dependent coercivity is observed in this system which reaches peak value at 25 at% Co, the values are 860 Oe and 1149 Oe with applied field along parallel and perpendicular to the film substrate interface respectively. This giant coercivity might pave the way to exploit this material as a magnetic semiconductor with novel logic functionalities. The findings are explained based on defect band itinerant ferromagnetism and its partial interaction with localized d electrons of Co through charge transfer. Besides large coercivity, an increase in the band gap with Co concentration has also been observed along with blue emission peak with long tail confirming the formation of extended point defect levels in the host lattice band gap. - Highlights: • Co doped ZnO ferromagnetic single crystal thin film. • Giant coercivity in Co:ZnO thin film which may help to turn this material into application. • Cathodoluminescence (CL) data showing increase in band gap with Co concentrations. • A theoretical proposal is made to explain the observed giant coercivity

  17. Effect of high temperature annealing on defects and optical properties of ZnO single crystals

    International Nuclear Information System (INIS)

    Jiang, M.; Wang, D.D.; Zou, B.; Chen, Z.Q.; Kawasuso, A.; Sekiguchi, T.

    2012-01-01

    Hydrothermal grown ZnO single crystals were annealed in N 2 or O 2 between 900 and 1300 C. Positron lifetime measurements reveal a single lifetime in all the ZnO samples before and after annealing. The positron lifetime is about 181 ps after annealing at 900 C in either N 2 or O 2 atmosphere. However, increase of the positron lifetime is observed after further annealing the sample at higher temperatures up to 1300 C, and it has a faster increase in O 2 ambient. Temperature dependence measurements show that the positron lifetime has very slight increase with temperature for the 900 C annealed sample, while it shows notable variation for the sample annealed at 1300 C. This implied that annealing at high temperature introduces additional defects. These defects are supposed to be Zn vacancy-related defects. Cathodoluminescence (CL) measurements indicates enhancement of both UV and green emission after annealing, and the enhancement of green emission is much stronger for the samples annealed in O 2 ambient. The possible origin of green emission is tentatively discussed. (Copyright copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  18. Intrinsic magnetism of a series of Co substituted ZnO single crystals

    International Nuclear Information System (INIS)

    Lv Peiwen; Huang Feng; Chu Wangsheng; Lin Zhang; Chen Dagui; Li Wei; Chen Dongliang; Wu Ziyu

    2008-01-01

    Magnetic properties of a series of well-substituted Zn 1-x Co x O (x = 0.018,0.036 and 0.05) single crystals were studied. A typical paramagnetic anisotropy property, which strengthens when x decreases, was found. A magnetization step was observed at 2 K when the magnetic field is parallel to the c axis, indicating that paramagnetic anisotropy is the origin of the strong crystal field effect on Co 2+ ions in ZnO lattices. The Co 2+ single-ion anisotropy parameter 2D is obtained as 7.5 K. The effective moment of Co 2+ takes the values 2.7 μ B , 1.82 μ B , 1.49 μ B when x = 0.018, 0.036 and 0.05, revealing that more antiferromagnetic coupling between Co 2+ ions arises in the perfect crystal when x increases

  19. Hydrogen peroxide treatment on ZnO substrates to investigate the characteristics of Pt and Pt oxide Schottky contacts

    International Nuclear Information System (INIS)

    Tsai, Chia-Hung; Hung, Chen-I; Yang, Cheng-Fu; Houng, Mau-Phon

    2010-01-01

    We utilize hydrogen peroxide (H 2 O 2 ) treatment on (0 0 0 1) ZnO substrates to investigate the characteristics of Pt and Pt oxide Schottky contacts (SCs). X-ray rocking curves show the mosaicity structure becomes larger after H 2 O 2 treatment. Photoluminescence (PL) spectra show the yellow-orange emission peaking at ∼576-580 nm with respect to deep level of oxygen interstitials introduced by H 2 O 2 treatment. The threshold formation of ZnO 2 resistive layer on H 2 O 2 -treated ZnO for 45 min is observed from grazing-incidence X-ray diffraction. The better electrical characteristic is performed by Pt oxide SC with the larger barrier height (1.09 eV) and the lower leakage current (9.52 x 10 -11 A/cm 2 at -2 V) than Pt SC on the H 2 O 2 -treated ZnO for 60 min. X-ray photoelectron spectroscopy (XPS) and secondary ion mass spectrometer (SIMS) examinations indicate the promoted interface oxide bonding and Zn outdiffusion for Pt oxide contact, different from Pt contact. Based on current-voltage, capacitance-voltage, X-ray diffraction, PL spectra, XPS, and SIMS results, the possible mechanism for effective rectifying characteristic and enhanced Schottky fbehavior is given.

  20. Room temperature strong coupling effects from single ZnO nanowire microcavity

    KAUST Repository

    Das, Ayan

    2012-05-01

    Strong coupling effects in a dielectric microcavity with a single ZnO nanowire embedded in it have been investigated at room temperature. A large Rabi splitting of ?100 meV is obtained from the polariton dispersion and a non-linearity in the polariton emission characteristics is observed at room temperature with a low threshold of 1.63 ?J/cm2, which corresponds to a polariton density an order of magnitude smaller than that for the Mott transition. The momentum distribution of the lower polaritons shows evidence of dynamic condensation and the absence of a relaxation bottleneck. The polariton relaxation dynamics were investigated by timeresolved measurements, which showed a progressive decrease in the polariton relaxation time with increase in polariton density. © 2012 Optical Society of America.

  1. Structural characterization of H plasma-doped ZnO single crystals by positron annihilation spectroscopies

    Energy Technology Data Exchange (ETDEWEB)

    Anwand, Wolfgang; Brauer, Gerhard; Cowan, Thomas E. [Institut fuer Strahlenphysik, Forschungszentrum Dresden-Rossendorf, P.O. Box 510 119, 01314 Dresden (Germany); Grambole, Dieter; Skorupa, Wolfgang [Institut fuer Ionenstrahlphysik und Materialforschung, Forschungszentrum Dresden-Rossendorf, P.O. Box 510 119, 01314 Dresden (Germany); Cizek, Jakub; Kuriplach, Jan; Prochazka, Ivan [Department of Low Temperature Physics, Charles University, V Holesovickach 2, 18000 Prague (Czech Republic); Egger, Werner; Sperr, Peter [Institut fuer Angewandte Physik und Messtechnik, Fakultaet fuer Luft- und Raumfahrttechnik, Universitaet der Bundeswehr, Heisenbergweg 39, 85579 Neubiberg (Germany)

    2010-11-15

    Nominally undoped, hydrothermally grown ZnO single crystals have been investigated before and after exposure to remote H plasma. Structural characterizations have been made by various positron annihilation spectroscopies (continuous and pulsed slow positron beams, conventional lifetime). The content of bound hydrogen (H-b) before and after the remote H plasma treatment at the polished side of the crystals was determined at depths of 100 and 600 nm, respectively, using nuclear reaction analysis. At a depth of 100 nm, H-b increased from (11.8{+-}2.5) to (48.7{+-}7.6) x 10{sup 19} cm{sup -3} after remote H plasma treatment, whereas at 600 nm no change in H-b was observed. (Copyright copyright 2010 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  2. Preparation of a Non-Polar ZnO Film on a Single-Crystal NdGaO3 Substrate by the RF Sputtering Method

    Science.gov (United States)

    Kashiwaba, Y.; Tanaka, Y.; Sakuma, M.; Abe, T.; Imai, Y.; Kawasaki, K.; Nakagawa, A.; Niikura, I.; Kashiwaba, Y.; Osada, H.

    2018-04-01

    Preparation of non-polar ZnO ( 11\\overline{2} 0 ) films on single-crystal NdGaO3 (NGO) (001) substrates was successfully achieved by the radio frequency (RF) sputtering method. Orientation, deposition rate, and surface roughness of ZnO films strongly depend on the working pressure. Characteristics of ZnO films deposited on single-crystal NGO (001) substrates were compared with those of ZnO films deposited on single-crystal sapphire ( 01\\overline{1} 2 ) substrates. An x-ray diffraction peak of the ZnO ( 11\\overline{2} 0 ) plane was observed on ZnO films deposited on single-crystal NGO (001) substrates under working pressure of less than 0.5 Pa. On the other hand, uniaxially oriented ZnO ( 11\\overline{2} 0 ) films on single-crystal sapphire ( 01\\overline{1} 2 ) substrates were observed under working pressure of 0.1 Pa. The mechanism by which the diffraction angle of the ZnO ( 11\\overline{2} 0 ) plane on single-crystal NGO (001) substrates was shifted is discussed on the basis of anisotropic stress of lattice mismatch. The deposition rate of ZnO films decreased with an increase in working pressure, and the deposition rate on single-crystal NGO (001) substrates was larger than that on single-crystal sapphire ( 01\\overline{1} 2 ) substrates. Root mean square (RMS) roughness of ZnO films increased with an increase in working pressure, and RMS roughness of ZnO films on single-crystal NGO (001) substrates was smaller than that of ZnO films on single-crystal sapphire ( 01\\overline{1} 2 ) substrates even though the film thickness on single-crystal NGO (001) substrates was greater than that on sapphire substrates. It is thought that a single-crystal NGO (001) substrate is useful for deposition of non-polar ZnO ( 11\\overline{2} 0 ) films.

  3. Shape-dependent plasma-catalytic activity of ZnO nanomaterials coated on porous ceramic membrane for oxidation of butane.

    Science.gov (United States)

    Sanjeeva Gandhi, M; Mok, Young Sun

    2014-12-01

    In order to explore the effects of the shape of ZnO nanomaterials on the plasma-catalytic decomposition of butane and the distribution of byproducts, three types of ZnO nanomaterials (nanoparticles (NPs), nanorods (NRs) and nanowires (NWs)) were prepared and coated on multi-channel porous alumina ceramic membrane. The structures and morphologies of the nanomaterials were confirmed by X-ray diffraction method and scanning electron microscopy. The observed catalytic activity of ZnO in the oxidative decomposition of butane was strongly shape-dependent. It was found that the ZnO NWs exhibited higher catalytic activity than the other nanomaterials and could completely oxidize butane into carbon oxides (COx). When using the bare or ZnO NPs-coated ceramic membrane, several unwanted partial oxidation and decomposition products like acetaldehyde, acetylene, methane and propane were identified during the decomposition of butane. When the ZnO NWs- or ZnO NRs-coated membrane was used, however, the formation of such unwanted byproducts except methane was completely avoided, and full conversion into COx was achieved. Better carbon balance and COx selectivity were obtained with the ZnO NWs and NRs than with the NPs. Copyright © 2014 Elsevier Ltd. All rights reserved.

  4. Study of defects and vacancies in structural properties of Mn, co-doped oxides: ZnO

    Science.gov (United States)

    Kumar, Harish; Kaushik, A.; Alvi, P. A.; Dalela, B.; Dalela, S.

    2018-05-01

    The paper deals with the Structural properties on Mn, Co doped oxides ZnO samples using XRD, Positron Annihilation Lifetime (PAL) Spectra and Raman Spectra. The Mn, Co doped ZnO samples crystallize in a wurtzite structure without any impurity phases in XRD Spectra. The defect state of these samples has been investigated by using positron annihilation lifetime (PAL) spectroscopy technique in which all the relevant lifetime parameters are measured for all the spectra. The results are explained in the direction of doping concentration in these samples in terms of defects structure on Zn lattice site VZn and oxygen defects Vo.

  5. ZnO transparent conductive oxide for thin film silicon solar cells

    Science.gov (United States)

    Söderström, T.; Dominé, D.; Feltrin, A.; Despeisse, M.; Meillaud, F.; Bugnon, G.; Boccard, M.; Cuony, P.; Haug, F.-J.; Faÿ, S.; Nicolay, S.; Ballif, C.

    2010-03-01

    There is general agreement that the future production of electric energy has to be renewable and sustainable in the long term. Photovoltaic (PV) is booming with more than 7GW produced in 2008 and will therefore play an important role in the future electricity supply mix. Currently, crystalline silicon (c-Si) dominates the market with a share of about 90%. Reducing the cost per watt peak and energy pay back time of PV was the major concern of the last decade and remains the main challenge today. For that, thin film silicon solar cells has a strong potential because it allies the strength of c-Si (i.e. durability, abundancy, non toxicity) together with reduced material usage, lower temperature processes and monolithic interconnection. One of the technological key points is the transparent conductive oxide (TCO) used for front contact, barrier layer or intermediate reflector. In this paper, we report on the versatility of ZnO grown by low pressure chemical vapor deposition (ZnO LP-CVD) and its application in thin film silicon solar cells. In particular, we focus on the transparency, the morphology of the textured surface and its effects on the light in-coupling for micromorph tandem cells in both the substrate (n-i-p) and superstrate (p-i-n) configurations. The stabilized efficiencies achieved in Neuchâtel are 11.2% and 9.8% for p-i-n (without ARC) and n-i-p (plastic substrate), respectively.

  6. Diffusion of single oxidation pond

    Directory of Open Access Journals (Sweden)

    Song Ruo-Yuan

    2016-01-01

    Full Text Available The hydraulic characteristic of an oxidation pond was studied by the tracer experiment, and an empirical formula of Peclet number was obtained, which can be well applied to the model of plug flow reactor with longitudinal diffusion.

  7. Structural and Optical Properties of ZnO Thin Film Prepared by Oxidation of Zn Metal Powders

    International Nuclear Information System (INIS)

    Hassan, N.K.; Hashim, M.R.

    2013-01-01

    High quality ZnO nano structures have been fabricated at room temperature by a simple vacuum thermal evaporator from metallic Zn powders (99.999 % purity) on a silicon (100) substrate. The Zn thin films were then transferred into a thermal tube furnace for oxidation at 700 degree Celsius for different time durations. Time was found to be a critical factor in the synthesis. This was followed by characterization of their morphological, structural and optical properties. The morphology of the grown ZnO nano structures exhibited several large grains, which increased gradually with increasing oxidation time. The crystallinity of the grown nano structures was investigated using X-ray diffraction, revealing that the synthesized ZnO was in hexagonal wurtzite phase. The photoluminescence (PL) spectra of the fabricated ZnO nano structures showed high intensity peak in the UV region due to near-band-edge (NBE) emission in which the structures oxidized for 30 min showing highest intensity. (author)

  8. UV Enhanced Oxygen Response Resistance Ratio of ZnO Prepared by Thermally Oxidized Zn on Sapphire Substrate

    Directory of Open Access Journals (Sweden)

    Cheng-Chang Yu

    2013-01-01

    Full Text Available ZnO thin film was fabricated by thermally oxidized Zn at 600°C for 1 h. A surface containing nanostructured dumbbell and lines was observed by scanning electron microscope (SEM. The ZnO resistor device was formed after the following Ti/Au metallization. The device resistance was characterized at different oxygen pressure environment in the dark and under ultraviolet (UV light illumination coming from the mercury lamp with a short pass filter. The resistance increases with the increase of oxygen pressure. The resistance decreases and response increases with the increase of light intensity. Models considering the barrier height variation caused by the adsorbed oxygen related species were used to explain these results. The UV light illumination technology shows an effective method to enhance the detection response for this ZnO resistor oxygen sensor.

  9. ZnO Nanowires Synthesized by Vapor Phase Transport Deposition on Transparent Oxide Substrates

    Directory of Open Access Journals (Sweden)

    Taylor Curtis

    2010-01-01

    Full Text Available Abstract Zinc oxide nanowires have been synthesized without using metal catalyst seed layers on fluorine-doped tin oxide (FTO substrates by a modified vapor phase transport deposition process using a double-tube reactor. The unique reactor configuration creates a Zn-rich vapor environment that facilitates formation and growth of zinc oxide nanoparticles and wires (20–80 nm in diameter, up to 6 μm in length, density <40 nm apart at substrate temperatures down to 300°C. Electron microscopy and other characterization techniques show nanowires with distinct morphologies when grown under different conditions. The effect of reaction parameters including reaction time, temperature, and carrier gas flow rate on the size, morphology, crystalline structure, and density of ZnO nanowires has been investigated. The nanowires grown by this method have a diameter, length, and density appropriate for use in fabricating hybrid polymer/metal oxide nanostructure solar cells. For example, it is preferable to have nanowires no more than 40 nm apart to minimize exciton recombination in polymer solar cells.

  10. Biodiesel synthesis by TiO2-ZnO mixed oxide nanocatalyst catalyzed palm oil transesterification process.

    Science.gov (United States)

    Madhuvilakku, Rajesh; Piraman, Shakkthivel

    2013-12-01

    Biodiesel is a promising alternating environmentally benign fuel to mineral diesel. For the development of easier transesterification process, stable and active heterogeneous mixed metal oxide of TiO2-ZnO and ZnO nanocatalysts were synthesized and exploited for the palm oil transesterification process. The synthesized catalysts were characterized by XRD, FT-IR, and FE-SEM studies for their structural and morphological characteristics. It was found that TiO2-ZnO nanocatalyst exhibits good catalytic activity and the catalytic performance was greatly depends on (i) catalyst concentration (ii) methanol to oil molar ratio (iii) reaction temperature and (iv) reaction time. A highest 98% of conversion was obtained at the optimum reaction parameters with 200 mg of catalyst loading and the biodiesel was analyzed by TLC and (1)H NMR techniques. The TiO2-ZnO nanocatalyst shows good catalytic performance over the ZnO catalyst, which could be a potential candidate for the large-scale biodiesel production from palm oil at the reduced temperature and time. Copyright © 2013. Published by Elsevier Ltd.

  11. Identification of Zn-vacancy-hydrogen complexes in ZnO single crystals: A challenge to positron annihilation spectroscopy

    Science.gov (United States)

    Brauer, G.; Anwand, W.; Grambole, D.; Grenzer, J.; Skorupa, W.; Čížek, J.; Kuriplach, J.; Procházka, I.; Ling, C. C.; So, C. K.; Schulz, D.; Klimm, D.

    2009-03-01

    A systematic study of various, nominally undoped ZnO single crystals, either hydrothermally grown (HTG) or melt grown (MG), has been performed. The crystal quality has been assessed by x-ray diffraction, and a comprehensive estimation of the detailed impurity and hydrogen contents by inductively coupled plasma mass spectrometry and nuclear reaction analysis, respectively, has been made also. High precision positron lifetime experiments show that a single positron lifetime is observed in all crystals investigated, which clusters at 180-182 ps and 165-167 ps for HTG and MG crystals, respectively. Furthermore, hydrogen is detected in all crystals in a bound state with a high concentration (at least 0.3at.% ), whereas the concentrations of other impurities are very small. From ab initio calculations it is suggested that the existence of Zn-vacancy-hydrogen complexes is the most natural explanation for the given experimental facts at present. Furthermore, the distribution of H at a metal/ZnO interface of a MG crystal, and the H content of a HTG crystal upon annealing and time afterward has been monitored, as this is most probably related to the properties of electrical contacts made at ZnO and the instability in p -type conductivity observed at ZnO nanorods in literature. All experimental findings and presented theoretical considerations support the conclusion that various types of Zn-vacancy-hydrogen complexes exist in ZnO and need to be taken into account in future studies, especially for HTG materials.

  12. Growth of compact arrays of optical quality single crystalline ZnO

    Indian Academy of Sciences (India)

    We report the synthesis and optical properties of compact and aligned ZnO nanorod arrays (dia, ∼ 50–200 nm) grown on a glass substrate with varying seed particle density. The suspension of ZnO nanoparticles (size, ∼ 15 nm) of various concentrations are used as seed layer for the growth of nanorod arrays via ...

  13. Synthesis, characterization and photocatalysis enhancement of Eu2O3-ZnO mixed oxide nanoparticles

    Science.gov (United States)

    Mohamed, W. S.; Abu-Dief, Ahmed M.

    2018-05-01

    Pure ZnO nanoparticles (NPs) and mixed Eu2O3 and ZnO NPs with different Eu2O3 ratios (5%, 10%, and 15%) were synthesized by a precipitation method under optimum conditions. The synthesized samples were characterized by means of X-ray diffraction, scanning electron microscopy (SEM), energy-dispersive X-ray spectroscopy, transmission electron microscopy (TEM), Fourier transform infrared (FTIR) spectroscopy, Raman spectroscopy, and UV-vis diffuse reflectance spectroscopy. The as-synthesized ZnO NPs exhibit high phase purity and a highly crystalline wurtzite ZnO structure. The mixed Eu2O3 and ZnO NPs exhibit a Eu2O3 zinc blend phase in addition to the wurtzite phase of pure ZnO, confirming the high purity and good crystallinity of the as-synthesized samples. The high-purity formation of ZnO and Eu2O3 phases was confirmed by FTIR and Raman spectra. Microstructural analysis by SEM and TEM confirmed the sphere-like morphology with different particle sizes (29-40 nm) of the as-synthesized samples. The photocatalytic activities of pure ZnO NPs and mixed Eu2O3 and ZnO NPs for the degradation of methylene blue were evaluated under ultraviolet (UV) irradiation. The results show that Eu2O3 plays an important role in the enhancement of the photocatalytic properties of ZnO NPs. We found that mixed 5% Eu2O3 and ZnO NPs exhibit the highest photocatalytic activity (degradation efficiency of 96.5% after 180 min of UV irradiation) as compared with pure ZnO NPs (degradation efficiency of 80.3% after 180 min of UV irradiation). The increased photocatalytic activity of the optimum mixed Eu2O3 and ZnO NPs is due to the high crystallinity, high surface area with small particle size, and narrow energy gap.

  14. Intrinsic magnetism of a series of Co substituted ZnO single crystals

    Energy Technology Data Exchange (ETDEWEB)

    Lv Peiwen [Laboratory of Materials Chemistry and Physics, Fujian Institute of Research on the Structure of Matter, National Engineering Research Center for Optoelectronic Crystalline Materials, Chinese Academy of Sciences, Fuzhou, Fujian 350002 (China); Huang Feng [Laboratory of Materials Chemistry and Physics, Fujian Institute of Research on the Structure of Matter, National Engineering Research Center for Optoelectronic Crystalline Materials, Chinese Academy of Sciences, Fuzhou, Fujian 350002 (China); Chu Wangsheng [Beijing Synchrotron Radiation Facility, Institute of High Energy Physics, Chinese Academy of Sciences, 100049 Beijing (China); Lin Zhang [Laboratory of Materials Chemistry and Physics, Fujian Institute of Research on the Structure of Matter, National Engineering Research Center for Optoelectronic Crystalline Materials, Chinese Academy of Sciences, Fuzhou, Fujian 350002 (China); Chen Dagui [Laboratory of Materials Chemistry and Physics, Fujian Institute of Research on the Structure of Matter, National Engineering Research Center for Optoelectronic Crystalline Materials, Chinese Academy of Sciences, Fuzhou, Fujian 350002 (China); Li Wei [Laboratory of Materials Chemistry and Physics, Fujian Institute of Research on the Structure of Matter, National Engineering Research Center for Optoelectronic Crystalline Materials, Chinese Academy of Sciences, Fuzhou, Fujian 350002 (China); Chen Dongliang [Beijing Synchrotron Radiation Facility, Institute of High Energy Physics, Chinese Academy of Sciences, 100049 Beijing (China); Wu Ziyu [Beijing Synchrotron Radiation Facility, Institute of High Energy Physics, Chinese Academy of Sciences, 100049 Beijing (China)

    2008-01-23

    Magnetic properties of a series of well-substituted Zn{sub 1-x}Co{sub x}O (x = 0.018,0.036 and 0.05) single crystals were studied. A typical paramagnetic anisotropy property, which strengthens when x decreases, was found. A magnetization step was observed at 2 K when the magnetic field is parallel to the c axis, indicating that paramagnetic anisotropy is the origin of the strong crystal field effect on Co{sup 2+} ions in ZnO lattices. The Co{sup 2+} single-ion anisotropy parameter 2D is obtained as 7.5 K. The effective moment of Co{sup 2+} takes the values 2.7 {mu}{sub B}, 1.82 {mu}{sub B}, 1.49 {mu}{sub B} when x = 0.018, 0.036 and 0.05, revealing that more antiferromagnetic coupling between Co{sup 2+} ions arises in the perfect crystal when x increases.

  15. Growing vertical ZnO nanorod arrays within graphite: efficient isolation of large size and high quality single-layer graphene.

    Science.gov (United States)

    Ding, Ling; E, Yifeng; Fan, Louzhen; Yang, Shihe

    2013-07-18

    We report a unique strategy for efficiently exfoliating large size and high quality single-layer graphene directly from graphite into DMF dispersions by growing ZnO nanorod arrays between the graphene layers in graphite.

  16. Effects of Doping Concentration on the Structural and Optical Properties of Spin-Coated In-doped ZnO Thin Films Grown on Thermally Oxidized ZnO Film/ZnO Buffer Layer/Mica Substrate

    International Nuclear Information System (INIS)

    Kim, Byunggu; Leem, Jae-Young

    2017-01-01

    ZnO buffer layers were deposited on mica substrates using a sol-gel spin coating method. Then, a thin film of metallic Zn was deposited onto the ZnO buffer layer/mica substrate using a thermal evaporator, and the deposited Zn thin films were then thermally oxidized in a furnace at 500 ℃ for 2 h in air. Finally, In-doped ZnO (IZO) thin films with different In concentrations were grown on the oxidized ZnO film/ZnO buffer layer/mica substrates using the sol-gel spin-coating method. All the IZO films showed ZnO peaks with similar intensities. The full width at half maximum values of the ZnO (002) peak for the IZO thin films decreased with an increase in the In concentration to 1 at%, because the crystallinity of the films was enhanced. However, a further increase in the In concentration caused the crystal quality to degrade. This might be attributed to the fact that the higher In doping resulted in an increase in the number of ionized impurities. The Urbach energy (EU) values of the IZO thin film decreased with an increase in the In concentration to 1 at % because of the enhanced crystal quality of the films. The EU values for the IZO thin films increased with the In concentration from 1 at%to 3 at%, reflecting the broadening of localized band tail state near the conduction band edge of the films.

  17. Effects of Doping Concentration on the Structural and Optical Properties of Spin-Coated In-doped ZnO Thin Films Grown on Thermally Oxidized ZnO Film/ZnO Buffer Layer/Mica Substrate

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Byunggu; Leem, Jae-Young [Inje University, Gimhae (Korea, Republic of)

    2017-01-15

    ZnO buffer layers were deposited on mica substrates using a sol-gel spin coating method. Then, a thin film of metallic Zn was deposited onto the ZnO buffer layer/mica substrate using a thermal evaporator, and the deposited Zn thin films were then thermally oxidized in a furnace at 500 ℃ for 2 h in air. Finally, In-doped ZnO (IZO) thin films with different In concentrations were grown on the oxidized ZnO film/ZnO buffer layer/mica substrates using the sol-gel spin-coating method. All the IZO films showed ZnO peaks with similar intensities. The full width at half maximum values of the ZnO (002) peak for the IZO thin films decreased with an increase in the In concentration to 1 at%, because the crystallinity of the films was enhanced. However, a further increase in the In concentration caused the crystal quality to degrade. This might be attributed to the fact that the higher In doping resulted in an increase in the number of ionized impurities. The Urbach energy (EU) values of the IZO thin film decreased with an increase in the In concentration to 1 at % because of the enhanced crystal quality of the films. The EU values for the IZO thin films increased with the In concentration from 1 at%to 3 at%, reflecting the broadening of localized band tail state near the conduction band edge of the films.

  18. Controllable synthesis of mesoporous multi-shelled ZnO microspheres as efficient photocatalysts for NO oxidation

    Science.gov (United States)

    Chen, Xiaolang; Zhang, Huiqiang; Zhang, Dieqing; Miao, Yingchun; Li, Guisheng

    2018-03-01

    The successful application of hierarchically porous structure in environmental treatment has provided new insights for solving environmental problems. Hierarchically structured semiconductor materials were considered as promising photocatalysts for NO oxidation in gas phase. Multi-shelled ZnO microspheres (MMSZ) were controllably shaped with hierarchically porous structures via a facile hydrothermal route using amino acid (N-Acetyl-D-Proline) as template and post-calcination treatment. Symmetric Ostwald ripening was used to explain the morphological evolution of hierarchical nanostructure. MMSZ was proved highly efficient for oxidizing NO (400 ppb) in gas phase under UV light irradiation with a much higher photocatalytic removal rate (77.3%) than that of the as-obtained ZnO crystals with other hierachically porous structures, owing to its higher photocurrent intensity. Such greatly enhanced photocatalytic activity can be assigned to the enhanced crystallinity of ZnO, mesopores and unique multi-shelled structure. Enhanced crystallinity promotes photogenerated charges under light irradiation. Mesoporous porosity can ensure enough light scattering between the shells. Multi-shelled structure endows ZnO with higher specific surface area and high frequency of multiple light reflection, resulting in more exposed active sites, higher light utilization efficiency, and fast separation efficiency of photogenerated charge carriers. The experimental results demonstrated that the photogenerated holes (h+) are the main active species. Hierarchically structured ZnO is not only contributed to directly use solar energy to solving various problems caused by atmospheric pollution, but also has potential applications in energy converse and storage including solar cells, lithium batteries, water-splitting, etc.

  19. Boron doped ZnO embedded into reduced graphene oxide for electrochemical supercapacitors

    Science.gov (United States)

    Alver, Ü.; Tanrıverdi, A.

    2016-08-01

    In this work, reduced graphene oxide/boron doped zinc oxide (RGO/ZnO:B) composites were fabricated by a hydrothermal process and their electrochemical properties were investigated as a function of dopant concentration. First, boron doped ZnO (ZnO:B) particles was fabricated with different boron concentrations (5, 10, 15 and 20 wt%) and then ZnO:B particles were embedded into RGO sheets. The physical properties of sensitized composites were characterized by XRD and SEM. Characterization indicated that the ZnO:B particles with plate-like structure in the composite were dispersed on graphene sheets. The electrochemical properties of the RGO/ZnO:B composite were investigated through cyclic voltammetry, galvanostatic charge/discharge measurements in a 6 M KOH electrolyte. Electrochemical measurements show that the specific capacitance values of RGO/ZnO:B electrodes increase with increasing boron concentration. RGO/ZnO:B composite electrodes (20 wt% B) display the specific capacitance as high as 230.50 F/g at 5 mV/s, which is almost five times higher than that of RGO/ZnO (52.71 F/g).

  20. Random laser based on Rhodamine 6G (Rh6G doped poly(methyl methacrylate (PMMA films coating on ZnO nanorods synthesized by hydrothermal oxidation

    Directory of Open Access Journals (Sweden)

    Hua Zhang

    Full Text Available Random laser based on Rh6G doped PMMA thin films coating on ZnO nanorods synthesized by a simple hydrothermal oxidation method has been demonstrated. This kind of random laser medium is based on waveguide structure consisting of ZnO nanorods, Rh6G doped PMMA film and air. By controlling the time of hydrothermal oxidation reaction, wheat-like and hexagonal prism ZnO nanorods have been successfully fabricated. The emission spectra of these gain mediums based on different ZnO nanorods are different. The one based on wheat-like ZnO nanorods mainly exhibits amplified spontaneous emission, and the other one based on hexagonal prism ZnO nanorods shows random laser emission. The threshold of the random laser medium is about 73.8 μJ/pulse, and the full width at half maximum (FWHM is around 2.1 nm. The emission spectra measured at different detecting angles reveal that the output direction is strongly confined in ±30° by the waveguide effect. Our experiments demonstrate a promising method to achieve organic random laser medium. Keywords: Random laser, ZnO nanorods, Hydrothermal oxidation, Rhodamine 6G (Rh6G, Poly(methyl methacrylate (PMMA

  1. Efficiency of Advanced H2O2/ZnO Oxidation Process in Ceftriaxone Antibiotic Removal from Aqueous Solutions

    Directory of Open Access Journals (Sweden)

    Maryam Noroozi cholcheh

    2017-11-01

    Full Text Available A major concern about pharmaceutical pollution is the presence of antibiotics in water resources through their release into sewers where they cause bacterial resistance and enhanced drug-resistance in human-borne pathogens and growing microbial populations in the environment. The objective of this study was to investigate the efficiency of  the advanced H2O2/ZnO oxidation process in removing ceftriaxone from aqueous solutions. For this purpose, an experimental study was conducted in which the SEM, XRD, and TEM techniques were employed to determine the size of Zinc oxide nano-particles. Additionally, the oxidation process parameters of pH (3-11, molar ratio of H2O2/ZnO (1.5-3, initial concentration of ceftriaxone (5–15 mg/L, and contact time (30-90 min were investigated. Teh data thus obntained were subjected top statistical analysis using the SPSS (ANOVA test. XRD results revealeda hexagonal crystal structure for the nano-ZnO. TEM images confirmed the spherical shape of the nanoparticles. Finally, SEM images revealed that the Zn nanoparticles used in this study were less than 30 nanometers in diameter. Based on the results, an optimum pH of 11, a contact time of 90 minutes, and a H2O2/ZnO molar ratio equal to 1.5 were the optimum conditions to achieve a ceftriaxone removal efficiency of 92%. The advance H2O2/ZnO oxidation process may thus be claimed to be highly capable of removing ceftriaxone from aqueous solutions.

  2. Trimethylamine Sensors Based on Au-Modified Hierarchical Porous Single-Crystalline ZnO Nanosheets

    Directory of Open Access Journals (Sweden)

    Fanli Meng

    2017-06-01

    Full Text Available It is of great significance for dynamic monitoring of foods in storage or during the transportation process through on-line detecting trimethylamine (TMA. Here, TMA were sensitively detected by Au-modified hierarchical porous single-crystalline ZnO nanosheets (HPSCZNs-based sensors. The HPSCZNs were synthesized through a one-pot wet-chemical method followed by an annealing treatment. Polyethyleneimine (PEI was used to modify the surface of the HPSCZNs, and then the PEI-modified samples were mixed with Au nanoparticles (NPs sol solution. Electrostatic interactions drive Au nanoparticles loading onto the surface of the HPSCZNs. The Au-modified HPSCZNs were characterized by X-ray diffraction (XRD, scanning electron microscopy (SEM, transmission electron microscopy (TEM and energy dispersive spectrum (EDS, respectively. The results show that Au-modified HPSCZNs-based sensors exhibit a high response to TMA. The linear range is from 10 to 300 ppb; while the detection limit is 10 ppb, which is the lowest value to our knowledge.

  3. Trimethylamine Sensors Based on Au-Modified Hierarchical Porous Single-Crystalline ZnO Nanosheets.

    Science.gov (United States)

    Meng, Fanli; Zheng, Hanxiong; Sun, Yufeng; Li, Minqiang; Liu, Jinhuai

    2017-06-22

    It is of great significance for dynamic monitoring of foods in storage or during the transportation process through on-line detecting trimethylamine (TMA). Here, TMA were sensitively detected by Au-modified hierarchical porous single-crystalline ZnO nanosheets (HPSCZNs)-based sensors. The HPSCZNs were synthesized through a one-pot wet-chemical method followed by an annealing treatment. Polyethyleneimine (PEI) was used to modify the surface of the HPSCZNs, and then the PEI-modified samples were mixed with Au nanoparticles (NPs) sol solution. Electrostatic interactions drive Au nanoparticles loading onto the surface of the HPSCZNs. The Au-modified HPSCZNs were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), transmission electron microscopy (TEM) and energy dispersive spectrum (EDS), respectively. The results show that Au-modified HPSCZNs-based sensors exhibit a high response to TMA. The linear range is from 10 to 300 ppb; while the detection limit is 10 ppb, which is the lowest value to our knowledge.

  4. Flower-like hierarchical structures consisting of porous single-crystalline ZnO nanosheets and their gas sensing properties to volatile organic compounds (VOCs)

    Energy Technology Data Exchange (ETDEWEB)

    Meng, Fanli, E-mail: flmeng@iim.ac.cn [Research Center for Biomimetic Functional Materials and Sensing Devices, Institute of Intelligent Machines, Chinese Academy of Sciences, Hefei 230031 (China); Department of Materials Science and Engineering, University of California, Los Angeles, CA 90095 (United States); Hou, Nannan [Research Center for Biomimetic Functional Materials and Sensing Devices, Institute of Intelligent Machines, Chinese Academy of Sciences, Hefei 230031 (China); Department of Chemistry, University of Science and Technology of China, Hefei 230026 (China); Ge, Sheng [Department of Mechanical and Automotive Engineering, Anhui Polytechnic University, Wuhu 241000 (China); Sun, Bai [Research Center for Biomimetic Functional Materials and Sensing Devices, Institute of Intelligent Machines, Chinese Academy of Sciences, Hefei 230031 (China); Jin, Zhen, E-mail: zjin@iim.ac.cn [Research Center for Biomimetic Functional Materials and Sensing Devices, Institute of Intelligent Machines, Chinese Academy of Sciences, Hefei 230031 (China); Shen, Wei; Kong, Lingtao; Guo, Zheng [Research Center for Biomimetic Functional Materials and Sensing Devices, Institute of Intelligent Machines, Chinese Academy of Sciences, Hefei 230031 (China); Sun, Yufeng, E-mail: sunyufeng118@126.com [Department of Mechanical and Automotive Engineering, Anhui Polytechnic University, Wuhu 241000 (China); Wu, Hao; Wang, Chen [Department of Materials Science and Engineering, University of California, Los Angeles, CA 90095 (United States); Li, Minqiang [Research Center for Biomimetic Functional Materials and Sensing Devices, Institute of Intelligent Machines, Chinese Academy of Sciences, Hefei 230031 (China)

    2015-03-25

    Highlights: • Flower-like hierarchical structures consisting of porous single-crystalline ZnO nanosheets were synthesized. • The flower-like hierarchical structured ZnO exhibited higher response and shorter response and recovery times. • The sensing mechanism of the flower-like hierarchical has been systematically analyzed. - Abstract: Flower-like hierarchical structures consisting of porous single-crystalline ZnO nanosheets (FHPSCZNs) were synthesized by a one-pot wet-chemical method followed by an annealing treatment, which combined the advantages between flower-like hierarchical structure and porous single-crystalline structure. XRD, SEM and HRTEM were used to characterize the synthesized FHPSCZN samples. The sensing properties of the FHPSCZN sensor were also investigated by comparing with ZnO powder sensor, which exhibited higher response and shorter response and recovery times. The sensing mechanism of the FHPSCZN sensor has been further analyzed from the aspects of electronic transport and gas diffusion.

  5. Flower-like hierarchical structures consisting of porous single-crystalline ZnO nanosheets and their gas sensing properties to volatile organic compounds (VOCs)

    International Nuclear Information System (INIS)

    Meng, Fanli; Hou, Nannan; Ge, Sheng; Sun, Bai; Jin, Zhen; Shen, Wei; Kong, Lingtao; Guo, Zheng; Sun, Yufeng; Wu, Hao; Wang, Chen; Li, Minqiang

    2015-01-01

    Highlights: • Flower-like hierarchical structures consisting of porous single-crystalline ZnO nanosheets were synthesized. • The flower-like hierarchical structured ZnO exhibited higher response and shorter response and recovery times. • The sensing mechanism of the flower-like hierarchical has been systematically analyzed. - Abstract: Flower-like hierarchical structures consisting of porous single-crystalline ZnO nanosheets (FHPSCZNs) were synthesized by a one-pot wet-chemical method followed by an annealing treatment, which combined the advantages between flower-like hierarchical structure and porous single-crystalline structure. XRD, SEM and HRTEM were used to characterize the synthesized FHPSCZN samples. The sensing properties of the FHPSCZN sensor were also investigated by comparing with ZnO powder sensor, which exhibited higher response and shorter response and recovery times. The sensing mechanism of the FHPSCZN sensor has been further analyzed from the aspects of electronic transport and gas diffusion

  6. Deep levels due to hydrogen in ZnO single crystals

    Science.gov (United States)

    Parmar, Narendra; Weber, Marc; Lynn, Kelvin

    2009-05-01

    Hydrogen impurities and oxygen vacancies are involved in the ˜0.7 eV shift of the optical absorption edge of ZnO. Deuterium causes a smaller shift. Titanium metal is used to bind hydrogen as it diffuses out of ZnO. Positron annihilation spectroscopy coupled with other techniques point to the presence of oxygen vacancies. Removing hydrogen followed by annealing in oxygen reduces the carrier concentration.

  7. Optimization of CVD parameters for long ZnO NWs grown on ITO

    Indian Academy of Sciences (India)

    The optimization of chemical vapour deposition (CVD) parameters for long and vertically aligned (VA) ZnO nanowires (NWs) were investigated. Typical ZnO NWs as a single crystal grown on indium tin oxide (ITO)-coated glass substrate were successfully synthesized. First, the conducted side of ITO–glass substrate was ...

  8. Oxidant-Dependent Thermoelectric Properties of Undoped ZnO Films by Atomic Layer Deposition

    KAUST Repository

    Kim, Hyunho; Wang, Zhenwei; Hedhili, Mohamed N.; Wehbe, Nimer; Alshareef, Husam N.

    2017-01-01

    , the maximum power factor for the water-based ZnO film is only 2.89 × 10 W m K at 746 K. Materials analysis results indicate that the oxygen vacancy levels in the water- and ozone-grown ZnO films are essentially the same, but the difference comes from Zn

  9. Laser induced single spot oxidation of titanium

    Energy Technology Data Exchange (ETDEWEB)

    Jwad, Tahseen, E-mail: taj355@bham.ac.uk; Deng, Sunan; Butt, Haider; Dimov, S.

    2016-11-30

    Highlights: • A new high resolution laser induced oxidation (colouring) method is proposed (single spot oxidation). • The method is applied to control oxide films thicknesses and hence colours on titanium substrates in micro-scale. • The method enable imprinting high resolution coloured image on Ti substrate. • Optical and morphological periodic surface structures are also produced by an array of oxide spots using the proposed method. • Colour coding of two colours into one field is presented. - Abstract: Titanium oxides have a wide range of applications in industry, and they can be formed on pure titanium using different methods. Laser-induced oxidation is one of the most reliable methods due to its controllability and selectivity. Colour marking is one of the main applications of the oxidation process. However, the colourizing process based on laser scanning strategies is limited by the relative large processing area in comparison to the beam size. Single spot oxidation of titanium substrates is proposed in this research in order to increase the resolution of the processed area and also to address the requirements of potential new applications. The method is applied to produce oxide films with different thicknesses and hence colours on titanium substrates. High resolution colour image is imprinted on a sheet of pure titanium by converting its pixels’ colours into laser parameter settings. Optical and morphological periodic surface structures are also produced by an array of oxide spots and then analysed. Two colours have been coded into one field and the dependencies of the reflected colours on incident and azimuthal angles of the light are discussed. The findings are of interest to a range of application areas, as they can be used to imprint optical devices such as diffusers and Fresnel lenses on metallic surfaces as well as for colour marking.

  10. Laser induced single spot oxidation of titanium

    International Nuclear Information System (INIS)

    Jwad, Tahseen; Deng, Sunan; Butt, Haider; Dimov, S.

    2016-01-01

    Highlights: • A new high resolution laser induced oxidation (colouring) method is proposed (single spot oxidation). • The method is applied to control oxide films thicknesses and hence colours on titanium substrates in micro-scale. • The method enable imprinting high resolution coloured image on Ti substrate. • Optical and morphological periodic surface structures are also produced by an array of oxide spots using the proposed method. • Colour coding of two colours into one field is presented. - Abstract: Titanium oxides have a wide range of applications in industry, and they can be formed on pure titanium using different methods. Laser-induced oxidation is one of the most reliable methods due to its controllability and selectivity. Colour marking is one of the main applications of the oxidation process. However, the colourizing process based on laser scanning strategies is limited by the relative large processing area in comparison to the beam size. Single spot oxidation of titanium substrates is proposed in this research in order to increase the resolution of the processed area and also to address the requirements of potential new applications. The method is applied to produce oxide films with different thicknesses and hence colours on titanium substrates. High resolution colour image is imprinted on a sheet of pure titanium by converting its pixels’ colours into laser parameter settings. Optical and morphological periodic surface structures are also produced by an array of oxide spots and then analysed. Two colours have been coded into one field and the dependencies of the reflected colours on incident and azimuthal angles of the light are discussed. The findings are of interest to a range of application areas, as they can be used to imprint optical devices such as diffusers and Fresnel lenses on metallic surfaces as well as for colour marking.

  11. Recovery of thermal-degraded ZnO photodetector by embedding nano silver oxide nanoparticles

    Energy Technology Data Exchange (ETDEWEB)

    Hu, Zhan-Shuo [Institute of Microelectronics, Center for Micro/Nano Science and Technology, National Cheng Kung University, Tainan 701, Taiwan (China); Hung, Fei-Yi, E-mail: fyhung@mail.ncku.edu.tw [Institute of Nanotechnology and Microsystems Engineering, Center for Micro/Nano Science and Technology, National Cheng Kung University, Tainan 701, Taiwan (China); Chen, Kuan-Jen [Institute of Nanotechnology and Microsystems Engineering, Center for Micro/Nano Science and Technology, National Cheng Kung University, Tainan 701, Taiwan (China); The Instrument Center, National Cheng Kung University, Tainan 701, Taiwan (China); Chang, Shoou-Jinn [Institute of Microelectronics, Center for Micro/Nano Science and Technology, National Cheng Kung University, Tainan 701, Taiwan (China); Institute of Microelectronics and Department of Electrical Engineering, Center for Micro/Nano Science and Technology, National Cheng Kung University, Tainan 701, Taiwan (China); Hsieh, Wei-Kang; Liao, Tsai-Yu; Chen, Tse-Pu [Institute of Microelectronics, Center for Micro/Nano Science and Technology, National Cheng Kung University, Tainan 701, Taiwan (China)

    2013-08-15

    The degraded performance of annealed ZnO-based photodetector can be recovered by embedding Ag{sub 2}O nanoparticles resulted from the transformation of as-deposited Ag layer. After thermal treatment, the electrons were attracted at the interface between ZnO and Ag{sub 2}O. The excess Ag{sup +} ions form the cluster to incorporate into the interstitial sites of ZnO lattice to create a larger amount of lattice defects for the leakage path. The photo-current of ZnO film with Ag{sub 2}O nanoparticles is less than annealed ZnO film because the photo-induced electrons would flow into Ag{sub 2}O side. ZnO photodetector with the appropriate Ag{sub 2}O nanoparticles possesses the best rejection ratio.

  12. A third kind growth model of tetrapod: Rod-based single crystal ZnO tetrapod nanostructure

    International Nuclear Information System (INIS)

    Gong, J.F.; Huang, H.B.; Wang, Z.Q.; Zhao, X.N.; Yang, S.G.; Yu Zhongzhen

    2008-01-01

    In this paper, rod-based ZnO tetrapods were successfully synthesized by burning Zn particles in air covered with two firebricks. The products show hexagonal wurtzite phase. The microstructures of the tetrapod were studied carefully by scanning electron microscope (SEM), transmission electron microscope (TEM), SAED and HRTEM. The results show that tetrapod has single crystalline phase with one broader nanorod growing along [0 0 0 1] direction, three triangular nanosheets, growing out of the three trisection planes along [101-bar0] direction, and three epitaxial nanowires, growing from each tip of the triangular nanosheets. Based on the experimental results, a rod-based growth model was proposed to interpret its growth mechanism. Room temperature photoluminescence spectrum reveals that the ZnO tetrapods have ultra violet (UV) emission band (389 nm) and a green emission band (517 nm)

  13. Single sheet metal oxides and hydroxides

    DEFF Research Database (Denmark)

    Huang, Lizhi

    The synthesis of layered double hydroxides (LDHs) provides a relatively easy and traditional way to build versatile chemical compounds with a rough control of the bulk structure. The delamination of LDHs to form their single host layers (2D nanosheets) and the capability to reassemble them offer......) Delamination of the LDHs structure (oxGRC12) with the formation of single sheet iron (hydr)oxide (SSI). (3) Assembly of the new 2D nanosheets layer by layer to achieve desired functionalities....

  14. Nitrogen grain-boundary passivation of In-doped ZnO transparent conducting oxide

    Science.gov (United States)

    Ali, D.; Butt, M. Z.; Coughlan, C.; Caffrey, D.; Shvets, I. V.; Fleischer, K.

    2018-04-01

    We have investigated the properties and conduction limitations of spray pyrolysis grown, low-cost transparent conducting oxide ZnO thin films doped with indium. We analyze the optical, electrical, and crystallographic properties as functions of In content with a specific focus on postgrowth heat treatment of these thin films at 320 ∘C in an inert, nitrogen atmosphere, which improves the films electrical properties considerably. The effect was found to be dominated by nitrogen-induced grain-boundary passivation, identified by a combined study using i n situ resistance measurement upon annealing, x-ray photoelectron spectroscopy, photoluminescence, and x-ray diffraction studies. We also highlight the chemical mechanism of morphologic and crystallographic changes found in films with high indium content. By optimizing growth conditions according to these findings, ZnO:In with a resistivity as low as 2 ×10 -3Ω cm , high optical quality (T ≈90 % ), and sheet resistance of 32 Ω /□ has been obtained without any need for postgrowth treatments.

  15. Microstructural and electrical characteristics of rare earth oxides doped ZnO varistor films

    Science.gov (United States)

    Jiao, Lei; Mei, Yunzhu; Xu, Dong; Zhong, Sujuan; Ma, Jia; Zhang, Lei; Bao, Li

    2018-02-01

    ZnO-Bi2O3 varistor films doped with two kinds of rare earth element oxides (Lu2O3 and Yb2O3) were prepared by the sol-gel method. The effects of Lu2O3/Yb2O3 doping on the microstructure and electrical characteristics of ZnO-Bi2O3 varistor films were investigated. All samples show a homogenized morphology and an improved nonlinear relationship between the electric field (E) and current density (I). Both Yb2O3 and Lu2O3 doping can decrease the grain size of ZnO-Bi2O3 varistor films and improve the electrical properties, which have a positive effect on the development of ZnO varistor ceramics. Yb2O3 doping significantly increases the dielectric constant at low frequency. 0.2 mol. % Yb2O3 doped ZnO-Bi2O3 varistor films exhibit the highest nonlinear coefficient (2.5) and the lowest leakage current (328 μA) among Lu2O3/Yb2O3 doped ZnO-Bi2O3 varistor films. Similarly, 0.1 mol. % Lu2O3 doping increases the nonlinear coefficient to 1.9 and decrease the leakage current to 462 μA.

  16. Effect of zinc oxide (ZnO) nanoparticles on physiology and steviol glycosides production in micropropagated shoots of Stevia rebaudiana Bertoni.

    Science.gov (United States)

    Javed, Rabia; Usman, Muhammad; Yücesan, Buhara; Zia, Muhammad; Gürel, Ekrem

    2017-01-01

    This study aims to address the effects of different concentrations (0, 0.1, 1.0, 10, 100 or 1000 mg L -1 ) of engineered zinc oxide (ZnO) nanoparticles (34 nm in size) on growth parameters, steviol glycosides (rebaudioside A and stevioside) production and antioxidant activities in the tissue culture grown shoots of Stevia rebaudiana Bertoni. The highest percentage of shoot formation (89.6%) at 1 mg L -1 of ZnO nanoparticles concentration suggests a positive influence of ZnO nanoparticles on S. rebaudiana growth as compared to other treatments with or without ZnO nanoparticles. Additionally, HPLC results illustrate a significant enhancement of steviol glycosides (almost doubled as compared to the control) in micropropagated shoots grown under an oxidative stress of 1 mg L -1 of ZnO nanoparticles. This finding is further affirmed by an increased 2,2-diphenyl-1-picryl hydrazyl (DPPH) scavenging activity, total anti-oxidant capacity, total reducing power, total flavonoid content and total phenolic content, with an ascending oxidative pressure and generation of reactive oxygen species (ROS). However, the antioxidant activities, formation of secondary metabolites and the physiological parameters showed a sudden decline after crossing a threshold of 1 mg L -1 concentration of ZnO nanoparticles and falls to a minimum at 1000 mg L -1 , elucidating maximum phytotoxic effect of ZnO nanoparticles at this concentration. This is the first study evaluating both the favorable and adverse effects of ZnO nanoparticles employed to a highly valuable medicinal plant, S. rebaudiana. Copyright © 2016 Elsevier Masson SAS. All rights reserved.

  17. ZnO Nanoparticles/Reduced Graphene Oxide Bilayer Thin Films for Improved NH3-Sensing Performances at Room Temperature

    Science.gov (United States)

    Tai, Huiling; Yuan, Zhen; Zheng, Weijian; Ye, Zongbiao; Liu, Chunhua; Du, Xiaosong

    2016-03-01

    ZnO nanoparticles and graphene oxide (GO) thin film were deposited on gold interdigital electrodes (IDEs) in sequence via simple spraying process, which was further restored to ZnO/reduced graphene oxide (rGO) bilayer thin film by the thermal reduction treatment and employed for ammonia (NH3) detection at room temperature. rGO was identified by UV-vis absorption spectra and X-ray photoelectron spectroscope (XPS) analyses, and the adhesion between ZnO nanoparticles and rGO nanosheets might also be formed. The NH3-sensing performances of pure rGO film and ZnO/rGO bilayer films with different sprayed GO amounts were compared. The results showed that ZnO/rGO film sensors exhibited enhanced response properties, and the optimal GO amount of 1.5 ml was achieved. Furthermore, the optimal ZnO/rGO film sensor showed an excellent reversibility and fast response/recovery rate within the detection range of 10-50 ppm. Meanwhile, the sensor also displayed good repeatability and selectivity to NH3. However, the interference of water molecules on the prepared sensor is non-ignorable; some techniques should be researched to eliminate the effect of moisture in the further work. The remarkably enhanced NH3-sensing characteristics were speculated to be attributed to both the supporting role of ZnO nanoparticles film and accumulation heterojunction at the interface between ZnO and rGO. Thus, the proposed ZnO/rGO bilayer thin film sensor might give a promise for high-performance NH3-sensing applications.

  18. Composite structure of ZnO films coated with reduced graphene oxide: structural, electrical and electrochemical properties

    Science.gov (United States)

    Shuai, Weiqiang; Hu, Yuehui; Chen, Yichuan; Hu, Keyan; Zhang, Xiaohua; Zhu, Wenjun; Tong, Fan; Lao, Zixuan

    2018-02-01

    ZnO films coated with reduced graphene oxide (RGO-ZnO) were prepared by a simple chemical approach. The graphene oxide (GO) films transferred onto ZnO films by spin coating were reduced to RGO films by two steps (exposed to hydrazine vapor for 12 h and annealed at 600 °C). The crystal structures, electrical and photoluminescence properties of RGO-ZnO films on quartz substrates were systematically studied. The SEM images illustrated that RGO layers have successfully been coated on the ZnO films very tightly. The PL properties of RGO-ZnO were studied. PL spectra show two sharp peaks at 390 nm and a broad visible emission around 490 nm. The resistivity of RGO-ZnO films was measured by a Hall measurement system, RGO as nanofiller considerably decrease the resistivity of ZnO films. An electrode was fabricated, using RGO-ZnO films deposited on Si substrate as active materials, for super capacitor application. By comparison of different results, we conclude that the RGO-ZnO composite material couples possess the properties of super capacitor. Project supported by the National Natural Science Foundation of China (Nos. 61464005, 51562015), the Natural Science Foundation of Jiangxi Province (Nos. 20143ACB21004, 20151BAB212008, 20171BAB216015), the Jiangxi Province Foreign Cooperation Projects, China (No. 20151BDH80031), the Leader Training Object Project of Major Disciplines Academic and Technical of Jiangxi Province (No. 20123BCB22002), and the Key Technology R & D Program of the Jiangxi Provine of Science and Technology (No. 20171BBE50053).

  19. Limits of ZnO Electrodeposition in Mesoporous Tin Doped Indium Oxide Films in View of Application in Dye-Sensitized Solar Cells

    Directory of Open Access Journals (Sweden)

    Christian Dunkel

    2014-04-01

    Full Text Available Well-ordered 3D mesoporous indium tin oxide (ITO films obtained by a templated sol-gel route are discussed as conductive porous current collectors. This paper explores the use of such films modified by electrochemical deposition of zinc oxide (ZnO on the pore walls to improve the electron transport in dye-sensitized solar cells (DSSCs. Mesoporous ITO film were dip-coated with pore sizes of 20–25 nm and 40–45 nm employing novel poly(isobutylene-b-poly(ethylene oxide block copolymers as structure-directors. After electrochemical deposition of ZnO and sensitization with the indoline dye D149 the films were tested as photoanodes in DSSCs. Short ZnO deposition times led to strong back reaction of photogenerated electrons from non-covered ITO to the electrolyte. ITO films with larger pores enabled longer ZnO deposition times before pore blocking occurred, resulting in higher efficiencies, which could be further increased by using thicker ITO films consisting of five layers, but were still lower compared to nanoporous ZnO films electrodeposited on flat ITO. The major factors that currently limit the application are the still low thickness of the mesoporous ITO films, too small pore sizes and non-ideal geometries that do not allow obtaining full coverage of the ITO surface with ZnO before pore blocking occurs.

  20. Limits of ZnO Electrodeposition in Mesoporous Tin Doped Indium Oxide Films in View of Application in Dye-Sensitized Solar Cells

    Science.gov (United States)

    Dunkel, Christian; von Graberg, Till; Smarsly, Bernd M.; Oekermann, Torsten; Wark, Michael

    2014-01-01

    Well-ordered 3D mesoporous indium tin oxide (ITO) films obtained by a templated sol-gel route are discussed as conductive porous current collectors. This paper explores the use of such films modified by electrochemical deposition of zinc oxide (ZnO) on the pore walls to improve the electron transport in dye-sensitized solar cells (DSSCs). Mesoporous ITO film were dip-coated with pore sizes of 20–25 nm and 40–45 nm employing novel poly(isobutylene)-b-poly(ethylene oxide) block copolymers as structure-directors. After electrochemical deposition of ZnO and sensitization with the indoline dye D149 the films were tested as photoanodes in DSSCs. Short ZnO deposition times led to strong back reaction of photogenerated electrons from non-covered ITO to the electrolyte. ITO films with larger pores enabled longer ZnO deposition times before pore blocking occurred, resulting in higher efficiencies, which could be further increased by using thicker ITO films consisting of five layers, but were still lower compared to nanoporous ZnO films electrodeposited on flat ITO. The major factors that currently limit the application are the still low thickness of the mesoporous ITO films, too small pore sizes and non-ideal geometries that do not allow obtaining full coverage of the ITO surface with ZnO before pore blocking occurs. PMID:28788618

  1. The Positron-Electron Correlation Energy In ZnO Calculated With The Modified Single Wave Function Of Positron

    International Nuclear Information System (INIS)

    Chau Van Tao; Trinh Hoa Lang; Le Hoang Chien; Nguyen Huu Loc; Nguyen Anh Tuan

    2011-01-01

    Positron-electron correlation energy of the ZnO - positron system is studied on assumption that positron binds with the outer shell electrons of Zinc and Oxygen to form the pseudo ZnO - positron molecule before it annihilates with one of these electrons. In this work, the single wave function for positron is form by LCAO approximation and is modified according to the principle of linear superposition, and by using Variational Quantum Monte Carlo method (VQMC) [7] the correlation energy of this system is estimated with the value E c e-p = - 9.3 ± 1.1 eV. In the theoretical aspect it turns out that this result is more reasonable and closer to those of other methods [3] than the one which is done without modifying the wave function of positron [1]. To confirm this legitimate approach, however, the further calculations of positron annihilation rate in ZnO have to be carried out in our next work. (author)

  2. Effect of KrF excimer laser irradiation on the surface changes and photoelectric properties of ZnO single crystal

    Energy Technology Data Exchange (ETDEWEB)

    Zeng, Yong [Institute of Laser Engineering, Beijing University of Technology, Beijing 100124 (China); Beijing Engineering Research Center of 3D Printing for Digital Medical Health, Beijing International Cooperation Base of 3D Printing for Digital MedicalHealth, Beijing University of Technology, Beijing 100124 (China); Zhao, Yan [Institute of Laser Engineering, Beijing University of Technology, Beijing 100124 (China); Jiang, Yijian, E-mail: yjjiang@bjut.edu.cn [Institute of Laser Engineering, Beijing University of Technology, Beijing 100124 (China); Beijing Engineering Research Center of 3D Printing for Digital Medical Health, Beijing International Cooperation Base of 3D Printing for Digital MedicalHealth, Beijing University of Technology, Beijing 100124 (China)

    2016-06-25

    In this paper, the effect of KrF pulsed excimer laser irradiation on the structural, surface morphology, photoluminescence and electrical properties of ZnO single crystal was investigated. Compared to the as-grown sample, at an irradiation energy density of 257 mJ/cm{sup 2}, the ZnO single crystal exhibits a series of phenomenon: XRD and Raman results show that the crystallization of ZnO quality change slightly, resistivity is decreased by two orders of magnitude, carrier concentration is increased by one order of magnitude. After laser irradiation, the surface shows some strip lines and no cracks. Formula calculation and simulation results show that the stripes are not caused by surface melting. We speculate that these stripes are caused by the precipitation of ZnO material inside to the surface. Due to the reduction of oxygen vacancies, UV emission has been enhanced and visible emission has been declined after irradiation. After the laser irradiation, the visible light of ZnO surface can be regulated. The experimental results show that KrF laser irradiation could effectively improve the optical and electrical properties of ZnO single crystal, which is important for the application of high performance of emitting optoelectronic devices. - Highlights: • After laser irradiation, the surface shows some strip lines and no cracks. • The visible light of as-irradiated ZnO surface can be regulated to four colors. • The electrical properties of as-irradiated ZnO has been improved greatly.

  3. Application of walnut shell modified with Zinc Oxide (ZnO nanoparticles in removal of natural organic matters (NOMs from aqueous solution

    Directory of Open Access Journals (Sweden)

    ali naghizadeh

    2015-10-01

    Full Text Available Background & Aims of the Study: Natural organic matters (NOMs are a mixture of chemically complex polyelectrolytes produced mainly from the decomposition of plant and animal residues that are present in all surface and groundwater resources. This paper evaluates the aqueous NOMs adsorption efficiency on walnut shell modified with Zinc Oxide (ZnO. Materials & Methods: This study examined the feasibility of removing NOMs from aqueous solutions using walnut shell modified with ZnO. The effects of NOMs concentration, modified walnut shell with ZnO dosage, and pH on adsorption of NOMs by modified walnut shell with ZnO were evaluated. Results: The adsorption capacities of modified walnut shell with ZnO in the best conditions were 37.93 mg/g. The results also demonstrated that adsorption capacity of NOMs on modified walnut shell with ZnO was higher in lower pHs due to significantly high electrostatic attraction exists between the positively charged surface of the adsorbent and negatively charged NOMs. And finally adsorption capacity decreases as adsorbent dose increase. Conclusion: Walnut shell modified with ZnO can be proposed as a natural adsorbent in the removal of NOMs from aqueous solutions

  4. Anodized ZnO nanostructures for photoelectrochemical water splitting

    Energy Technology Data Exchange (ETDEWEB)

    Huang, Mao-Chia [Institute of Materials Science and Engineering, National Central University, Taoyuan 32001, Taiwan (China); Wang, TsingHai [Department of Biomedical Engineering and Environment Sciences, National Tsing Hua University, Hsinchu 30013, Taiwan (China); Wu, Bin-Jui [Institute of Materials Science and Engineering, National Central University, Taoyuan 32001, Taiwan (China); Lin, Jing-Chie, E-mail: jclin4046@gmail.com [Institute of Materials Science and Engineering, National Central University, Taoyuan 32001, Taiwan (China); Wu, Ching-Chen [Green Energy and Environment Research Laboratories, Industrial Technology Research Institute, Hsinchu 310, Taiwan (China)

    2016-01-01

    Highlights: • ZnO nanostructures were synthesized by electrochemical anodic process. • The parameter of ZnO nanostructure was anodic potential. • The model of growth of ZnO nanostructure was investigated. - Abstract: Zinc oxide (ZnO) nanostructures were fabricated on the polished zinc foil by anodic deposition in an alkaline solution containing 1.0 M NaOH and 0.25 M Zn(NO{sub 3}){sub 2}. Potentiostatic anodization was conducted at two potentials (−0.7 V in the passive region and −1.0 V in the active region vs. SCE) which are higher than the open circuit potential (−1.03 V vs. SCE) and as-obtained ZnO nanostrcutures were investigated focusing on their structural, optical, electrical and photoelectrochemical (PEC) characteristics. All samples were confirmed ZnO by X-ray photoelectron spectroscopy and Raman spectra. Observations in the SEM images clearly showed that ZnO nanostructures prepared at −0.7 V vs. SCE were composed of nanowires at while those obtained at −1.0 V vs. SCE possessed nanosheets morphology. Result from transmission electron microscope and X-ray diffraction patterns suggested that the ZnO nanowires belonged to single crystalline with a preferred orientation of (0 0 2) whereas the ZnO nanosheets were polycrystalline. Following PEC experiments indicated that ZnO nanowires had higher photocurrent density of 0.32 mA/cm{sup 2} at 0.5 V vs. SCE under 100 mW/cm{sup 2} illumination. This value was about 1.9 times higher than that of ZnO nanosheets. Observed higher photocurrent was likely due to the single crystalline, preferred (0 0 2) orientation, higher carrier concentration and lower charge transfer resistance.

  5. Preparation of Zinc Oxide (ZnO) Thin Film as Transparent Conductive Oxide (TCO) from Zinc Complex Compound on Thin Film Solar Cells: A Study of O2 Effect on Annealing Process

    Science.gov (United States)

    Muslih, E. Y.; Kim, K. H.

    2017-07-01

    Zinc oxide (ZnO) thin film as a transparent conductive oxide (TCO) for thin film solar cell application was successfully prepared through two step preparations which consisted of deposition by spin coating at 2000 rpm for 10 second and followed by annealing at 500 °C for 2 hours under O2 and ambient atmosphere. Zinc acetate dehydrate was used as a precursor which dissolved in ethanol and acetone (1:1 mol) mixture in order to make a zinc complex compound. In this work, we reported the O2 effect, reaction mechanism, structure, morphology, optical and electrical properties. ZnO thin film in this work shows a single phase of wurtzite, with n-type semiconductor and has band gap, carrier concentration, mobility, and resistivity as 3.18 eV, 1.21 × 10-19cm3, 11 cm2/Vs, 2.35 × 10-3 Ωcm respectively which is suitable for TCO at thin film solar cell.

  6. Formation of Isolated Zn Vacancies in ZnO Single Crystals by Absorption of Ultraviolet Radiation: A Combined Study Using Positron Annihilation, Photoluminescence, and Mass Spectroscopy

    Science.gov (United States)

    Khan, Enamul H.; Weber, Marc H.; McCluskey, Matthew D.

    2013-07-01

    Positron annihilation spectra reveal isolated zinc vacancy (VZn) creation in single-crystal ZnO exposed to 193-nm radiation at 100mJ/cm2 fluence. The appearance of a photoluminescence excitation peak at 3.18 eV in irradiated ZnO is attributed to an electronic transition from the VZn acceptor level at ˜100meV to the conduction band. The observed VZn density profile and hyperthermal Zn+ ion emission support zinc vacancy-interstitial Frenkel pair creation by exciting a wide 6.34 eV Zn-O antibonding state at 193-nm photon—a novel photoelectronic process for controlled VZn creation in ZnO.

  7. A prototype Ultraviolet Light Sensor based on ZnO Nanoparticles/Graphene Oxide Nanocomposite Using Low Temperature Hydrothermal Method

    International Nuclear Information System (INIS)

    Al-Fandi, M; Oweis, R; Khwailah, H; Al-Hattami, S; Al-Shawwa, E; Albiss, B A; Al-Akhras, M-Ali; Qutaish, H; AlZoubi, T

    2015-01-01

    A new prototype UV nanosensor using ZnO nanoparticles (NPs)/graphene oxide (GO) nanocomposite (ZnO-NP/GO) on silicon substrate is reported in this paper. The hybrid nanocomposite structure has been developed by an optimized hydrothermal process at low growth temperature (∼50 °C). In this hybrid nanosensor, the ZnO nanoparticles act as UV- absorbing and charge carrier generating material, while graphene with its superior electrical conductivity has been used as a charge transporting material. Various nanostructure characterization techniques were intensively utilized including SEM, EDX, XRD, FTIR and UV-VIS. Also, the I-V measurement was employed to evaluate the prototype sensor. The morphological SEM analysis showed that the ZnO-NPs (average diameter of 20 nm) were dispersed evenly on the GO sheets. As well, the EDX spectra confirmed the exact chemical composition of the intended structure. The room temperature UV-VIS measurement revealed an enhanced optical absorption of UV-light at an absorption band centered on 375 nm. The improved optical and electrical properties were observed at an optimum relative concentration of 1:10. Under UV light illumination, the measured I-V characteristic of the prototype detector exhibited a considerable photocurrent increase of the ZnO-NP/GO nanocomposite compared to pristine ZnO nanostructure. These results can be promising for future enhanced UV- sensing applications. (paper)

  8. Functional doped metal oxide films. Zinc oxide (ZnO) as transparent conducting oxide (TCO) titanium dioxide (TiO{sub 2}) as thermographic phosphor and protective coating

    Energy Technology Data Exchange (ETDEWEB)

    Nebatti Ech-Chergui, Abdelkader

    2011-07-29

    Metalorganic chemical vapor deposition (MOCVD) was used in the present work. Un-doped and Al-doped ZnO films were developed using two reactors: Halogen Lamp Reactor (HLR) (a type of Cold Wall Reactor) and Hot Wall Reactor (HWR), and a comparison was made between them in terms of the film properties. Zinc acetylacetonate was used as precursor for ZnO films while aluminum acetylacetonate was used for doping. The amount of Al doping can be controlled by varying the gas flow rate. Well ordered films with aluminum content between 0 and 8 % were grown on borosilicate glass and silicon. The films obtained are 0.3 to 0.5 {mu}m thick, highly transparent and reproducible. The growth rate of ZnO films deposited using HLR is less than HWR. In HLR, the ZnO films are well oriented along c-axis ((002) plane). ZnO films are commonly oriented along the c-axis due to its low surface free energy. On the other hand, the HWR films are polycrystalline and with Al doping these films aligned along the a-axis ((100) plane) which is less commonly observed. The best films were obtained with the HLR method showing a minimum electrical resistivity of 2.4 m{omega}cm and transmittance of about 80 % in the visible range. The results obtained for Al-doped films using HLR are promising to be used as TCOs. The second material investigated in this work was un-doped and doped titanium dioxide (TiO{sub 2}) films- its preparation and characterization. It is well known that thermographic phosphors can be used as an optical method for the surface temperature measurement. For this application, the temperature-dependent luminescence properties of europium (III)-doped TiO{sub 2} thin films were studied. It was observed that only europium doped anatase films show the phosphorescence. Rutile phase do not show phosphorescence. The films were prepared by the sol-gel method using the dip coating technique. The structures of the films were determined by X-ray diffraction (XRD). The excitation and the emission

  9. Optical and Magnetic Resonance Studies of Na-Diffused ZnO Bulk Single Crystals

    Science.gov (United States)

    Glaser, E. R.; Garces, N. Y.; Parmar, N. S.; Lynn, K. G.

    2013-03-01

    Photoluminescence (PL) and optically-detected magnetic resonance (ODMR) at 24 GHz were performed on bulk ZnO crystals after diffusion of Na impurities that were explored as an alternate doping source for p-type conductivity. PL at 2K revealed strong bandedge excitonic recombination at 3.361 eV and a broad ``orange'' PL band at 2.17 eV with FWHM of ~0.5 eV. This ``orange'' emission is very similar to that reported previously[1] from thermoluminescence measurements of intentionally Na-doped bulk ZnO and, thus, strongly suggests the incorporation and activation of the Na-diffused impurities. ODMR performed on this ``orange'' PL revealed two signals. The first was a sharp feature with g-value of ~1.96 and is a well-known ``fingerprint'' of shallow donors in ZnO. The second signal consisted of a pair of lines with an intensity ratio of ~3:1 and with g-tensors (g∥,g⊥ ~2.008-2.029) very similar to ESR signals attributed previously[2] to holes bound to Na impurities located at the axial and non-axial Zn host lattice sites in Na-doped ZnO. Thus, the ``orange'' PL can be tentatively assigned to radiative recombination between residual shallow donors and deep Na-related hole traps.

  10. Defects in N{sup +} ion-implanted ZnO single crystals studied by positron annihilation and Hall effect

    Energy Technology Data Exchange (ETDEWEB)

    Brauer, G.; Anwand, W.; Skorupa, W. [Institut fuer Ionenstrahlphysik und Materialforschung, Forschungszentrum Rossendorf, Dresden (Germany); Kuriplach, J.; Melikhova, O.; Cizek, J.; Prochazka, I. [Department of Low Temperature Physics, Faculty of Mathematics and Physics, Charles Univ., Prague (Czech Republic); Wenckstern, H. von; Brandt, M.; Lorenz, M.; Grundmann, M. [Institut fuer Experimentelle Physik II, Universitaet Leipzig (Germany)

    2007-07-01

    High quality ZnO single crystals of dimensions 10 x 10 x 0.5 mm{sup 3}, grown by a hydrothermal approach, have been implanted by 40 keV N{sup +} ions to a fluence of 1 x 10{sup 15} cm{sup -2} at room temperature. Their properties revealed by positron annihilation and Hall effect measurements are given in the as-grown and as-irradiated states, and after post-implantation annealing in an oxygen ambient at 200 C and 500 C. (copyright 2007 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  11. TiN/Al2O3/ZnO gate stack engineering for top-gate thin film transistors by combination of post oxidation and annealing

    Science.gov (United States)

    Kato, Kimihiko; Matsui, Hiroaki; Tabata, Hitoshi; Takenaka, Mitsuru; Takagi, Shinichi

    2018-04-01

    Control of fabrication processes for a gate stack structure with a ZnO thin channel layer and an Al2O3 gate insulator has been examined for enhancing the performance of a top-gate ZnO thin film transistor (TFT). The Al2O3/ZnO interface and the ZnO layer are defective just after the Al2O3 layer formation by atomic layer deposition. Post treatments such as plasma oxidation, annealing after the Al2O3 deposition, and gate metal formation (PMA) are promising to improve the interfacial and channel layer qualities drastically. Post-plasma oxidation effectively reduces the interfacial defect density and eliminates Fermi level pinning at the Al2O3/ZnO interface, which is essential for improving the cut-off of the drain current of TFTs. A thermal effect of post-Al2O3 deposition annealing at 350 °C can improve the crystalline quality of the ZnO layer, enhancing the mobility. On the other hand, impacts of post-Al2O3 deposition annealing and PMA need to be optimized because the annealing can also accompany the increase in the shallow-level defect density and the resulting electron concentration, in addition to the reduction in the deep-level defect density. The development of the interfacial control technique has realized the excellent TFT performance with a large ON/OFF ratio, steep subthreshold characteristics, and high field-effect mobility.

  12. A novel fabrication methodology for sulfur-doped ZnO nanorods as an active photoanode for improved water oxidation in visible-light regime

    Science.gov (United States)

    Khan, A.; Ahmed, M. I.; Adam, A.; Azad, A.-M.; Qamar, M.

    2017-02-01

    Incorporation of foreign moiety in the lattice of semiconductors significantly alters their optoelectronic behavior and opens a plethora of new applications. In this paper, we report the synthesis of sulfur-doped zinc oxide (S-doped ZnO) nanorods by reacting ZnO nanorods with diammonium sulfide in vapor phase. Microscopic investigation revealed that the morphological features, such as, the length (2-4 μm) and width (100-250 nm) of the original hexagonal ZnO nanorods remained intact post-sulfidation. X-ray photoelectron spectroscopy analysis of the sulfide sample confirmed the incorporation of sulfur into ZnO lattice. The optical measurements suggested the extension of absorption threshold into visible region upon sulfidation. Photoelectrochemical (PEC) activities of pure and S-doped ZnO nanorods were compared for water oxidation in visible light (λ > 420 nm), which showed several-fold increment in the performance of S-doped ZnO sample; the observed amelioration in the PEC activity was rationalized in terms of preferred visible light absorption and low resistance of sulfide sample, as evidenced by optical and electrochemical impedance spectroscopy.

  13. Controlling the electrical properties of ZnO films by forming zinc and oxide bridges by a plasma and electron-assisted process

    Directory of Open Access Journals (Sweden)

    Norihiro Shimoi

    2012-06-01

    Full Text Available A new method to produce electrically steady ZnO films without any heating process has been developed by using plasma and electron beams to facilitate bonding between the metallic component and the oxygen on coated ZnO films. Both plasma atmosphere and electron beams can function as sources of nonequilibrium bonding energy, forming bridges between the zinc present in the zinc complex and the oxygen in the ZnO particles to construct a zinc-oxide thin film. Our results confirm that it is possible to achieve low conductive characteristics by controlling the acceleration voltage of electrons used to irradiate the ZnO coating. The electrically steady films fabricated have various potential applications, being particularly well-suited to electrical devices on a plastic medium.

  14. Controlling the electrical properties of ZnO films by forming zinc and oxide bridges by a plasma and electron-assisted process

    Energy Technology Data Exchange (ETDEWEB)

    Shimoi, Norihiro; Tanaka, Yasumitsu [Graduate School of Environmental Studies, Tohoku University, 6-6-20 Aoba, Aramaki, Aoba-ku, Sendai 980-8579 (Japan); Harada, Takamitsu [Sendai Technology Center, Consumer-Professional and Devices Group, Sony Corporation, 3-4-1 Sakuragi, Tagajo 985-0842 (Japan); Tanaka, Shun-ichiro [Institute of Multidisciplinary Research for Advanced Materials, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577 (Japan)

    2012-06-15

    A new method to produce electrically steady ZnO films without any heating process has been developed by using plasma and electron beams to facilitate bonding between the metallic component and the oxygen on coated ZnO films. Both plasma atmosphere and electron beams can function as sources of nonequilibrium bonding energy, forming bridges between the zinc present in the zinc complex and the oxygen in the ZnO particles to construct a zinc-oxide thin film. Our results confirm that it is possible to achieve low conductive characteristics by controlling the acceleration voltage of electrons used to irradiate the ZnO coating. The electrically steady films fabricated have various potential applications, being particularly well-suited to electrical devices on a plastic medium.

  15. Growth and characterization of nonpolar (10-10) ZnO transparent conductive oxide on semipolar (11–22) GaN-based light-emitting diodes

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Ki-Wook; Choi, Nak-Jung [Department of Nano-Optical Engineering, Korea Polytechnic University, Siheung, Gyeonggi-do, 429-839 (Korea, Republic of); Kim, Kyoung-Bo [Department of Metallurgical and Materials Engineering, Inha Technical College, Incheon, 402-752 (Korea, Republic of); Kim, Moojin [Department of Renewable Energy, Jungwon University, 85, Munmu-ro, Goesan-eup, Goesan-gun, Chungbuk, 367-805 (Korea, Republic of); Lee, Sung-Nam, E-mail: snlee@kpu.ac.kr [Department of Nano-Optical Engineering, Korea Polytechnic University, Siheung, Gyeonggi-do, 429-839 (Korea, Republic of)

    2016-05-05

    We have grown thin films of nonpolar m-plane (10-10) ZnO on a semipolar (11–22) GaN template by atomic layer deposition (ALD) at low growth temperatures (<200 °C). The surface morphology of the ZnO film is found to be an arrowhead-like structure, which is a typical surface structure of the semipolar (11–22) GaN films. On increasing the growth temperature of the ZnO films, the concentration and mobility of the charge carriers in the ZnO film are increased. However, the optical transmittance decreases with an increase in the growth temperature. Based on these results, we have fabricated semipolar (11–22) GaN-based light-emitting diodes (LEDs) with nonpolar m-plane ZnO film as a transparent conductive oxide (TCO) to improve the light extraction efficiency. In spite of a decrease in the optical transmittance, the operation voltage of semipolar (11–22) GaN-based LEDs is found to decrease with an increase in the growth temperature, which might be due to the improvements in the electrical properties and current spreading effect, resulting in an increase in the optical output power. - Highlights: • Polarity control of ZnO film grown in m-/c-sapphire and semipolar GaN template. • Achievement of high quality nonpolar m-plane ZnO flims on semipolar (11–22) GaN template. • The simultaneous improvements of carrier concentration and mobility in the nonpolar ZnO TCO flims. • Nonpolar ZnO TCO increases current spreading length and light output power of semipolar GaN-LED.

  16. Some clues about the interphase reaction between ZnO and MnO2 oxides

    International Nuclear Information System (INIS)

    Rubio-Marcos, F.; Quesada, A.; Garcia, M.A.; Banares, M.A.; Fierro, J.L.G.; Martin-Gonzalez, M.S.; Costa-Kraemer, J.L.; Fernandez, J.F.

    2009-01-01

    Raman spectroscopy is used to evidence both the nature of the interphase reaction between ZnO and MnO 2 particles and its kinetic evolution. Zn cations migrate from the ZnO grains during oxygen vacancies formation process and diffuse into the MnO 2 particles leading to an interphase region with an intermediate valence Mn +3 -O-Mn +4 . Large amounts of desorbed Zn cations promote the formation of ZnMn 2 O 4 structure, in addition to the intermediate valence state. The system evolves towards complete formation of the spinel phase at higher thermal treatment times. The reactivity of the ZnO plays an important role in the formation of this interphase. Low-reactivity ZnO powder, in which the oxygen vacancies are previously produced, shows a stabilization of the intermediate valence state with very limited formation of the spinel phase. A clear correlation between the amount of the intermediate state interphase and the magnetic properties has been established. - Graphical abstract: Recently new room temperature interphase magnetism has been reported to appear in ZnO-MnO 2 system. Raman spectroscopy is used to evidence both the nature of the interphase reaction and the kinetic. The interphase evolved towards complete formation of the spinel phase. The reactivity of the ZnO plays an important role in the formation of this interphase. Finally, a clear correlation between the amount of the intermediate valence state and the interphase magnetic properties has been established.

  17. Toward single-mode random lasing within a submicrometre-sized spherical ZnO particle film

    International Nuclear Information System (INIS)

    Niyuki, Ryo; Fujiwara, Hideki; Sasaki, Keiji; Ishikawa, Yoshie; Koshizaki, Naoto; Tsuji, Takeshi

    2016-01-01

    We had recently reported unique random laser action such as quasi-single-mode and low-threshold lasing from a submicrometre-sized spherical ZnO nanoparticle film with polymer particles as defects. The present study demonstrates a novel approach to realize single-mode random lasing by adjusting the sizes of the defect particles. From the dependence of random lasing properties on defect size, we find that the average number of lasing peaks can be modified by the defect size, while other lasing properties such as lasing wavelengths and thresholds remain unchanged. These results suggest that lasing wavelengths and thresholds are determined by the resonant properties of the surrounding scatterers, while the defect size stochastically determines the number of lasing peaks. Therefore, if we optimize the sizes of the defects and scatterers, we can intentionally induce single-mode lasing even in a random structure (Fujiwara et al 2013 Appl. Phys. Lett. 102 061110). (paper)

  18. The formation of tungsten doped Al{sub 2}O{sub 3}/ZnO coatings on aluminum by plasma electrolytic oxidation and their application in photocatalysis

    Energy Technology Data Exchange (ETDEWEB)

    Stojadinović, Stevan, E-mail: sstevan@ff.bg.ac.rs [University of Belgrade, Faculty of Physics, Studentski trg 12-16, 11000 Belgrade (Serbia); Vasilić, Rastko [University of Belgrade, Faculty of Physics, Studentski trg 12-16, 11000 Belgrade (Serbia); Radić, Nenad [University of Belgrade, Institute of Chemistry, Technology and Metallurgy, Department of Catalysis and Chemical Engineering, Njegoševa 12, 11000 Belgrade (Serbia); Tadić, Nenad [University of Belgrade, Faculty of Physics, Studentski trg 12-16, 11000 Belgrade (Serbia); Stefanov, Plamen [Institute of General and Inorganic Chemistry, Bulgarian Academy of Sciences, Acad. G. Bonchev Str., Block 11, 1113 Sofia (Bulgaria); Grbić, Boško [University of Belgrade, Institute of Chemistry, Technology and Metallurgy, Department of Catalysis and Chemical Engineering, Njegoševa 12, 11000 Belgrade (Serbia)

    2016-07-30

    Highlights: • Tungsten doped Al{sub 2}O{sub 3}/ZnO coatings are formed by plasma electrolytic oxidation (PEO). • Coatings are mainly composed of alpha alumina, ZnO and metallic tungsten. • Photocatalytic activity of doped Al{sub 2}O{sub 3}/ZnO coatings is higher than of undoped ones. • The increase of photoluminescence corresponds to decrease of photocatalytic activity. • Tungsten acts as a charge trap to reduce the recombination rate of electron/hole pairs. - Abstract: Tungsten doped Al{sub 2}O{sub 3}/ZnO coatings are formed by plasma electrolytic oxidation of aluminum substrate in supporting electrolyte (0.1 M boric acid + 0.05 M borax + 2 g/L ZnO) with addition of different concentrations of Na{sub 2}WO{sub 4}·2H{sub 2}O. The morphology, crystal structure, chemical composition, and light absorption characteristics of formed surface coatings are investigated. The X-ray diffraction and X-ray photoelectron spectroscopy results indicate that formed surface coatings consist of alpha and gamma phase of Al{sub 2}O{sub 3}, ZnO, metallic tungsten and WO{sub 3}. Obtained results showed that incorporated tungsten does not have any influence on the absorption spectra of Al{sub 2}O{sub 3}/ZnO coatings, which showed invariable band edge at about 385 nm. The photocatalytic activity of undoped and tungsten doped Al{sub 2}O{sub 3}/ZnO coatings is estimated by the photodegradation of methyl orange. The photocatalytic activity of tungsten doped Al{sub 2}O{sub 3}/ZnO coatings is higher thanof undoped Al{sub 2}O{sub 3}/ZnO coatings; the best photocatalytic activity is ascribed to coatings formed in supporting electrolyte with addition of 0.3 g/L Na{sub 2}WO{sub 4}·2H{sub 2}O. Tungsten in Al{sub 2}O{sub 3}/ZnO coatings acts as a charge trap, thus reducing the recombination rate of photogenerated electron-hole pairs. The results of PL measurements are in agreement with photocatalytic activity. Declining PL intensity corresponds to increasing photocatalytic activity of the

  19. The formation of tungsten doped Al_2O_3/ZnO coatings on aluminum by plasma electrolytic oxidation and their application in photocatalysis

    International Nuclear Information System (INIS)

    Stojadinović, Stevan; Vasilić, Rastko; Radić, Nenad; Tadić, Nenad; Stefanov, Plamen; Grbić, Boško

    2016-01-01

    Highlights: • Tungsten doped Al_2O_3/ZnO coatings are formed by plasma electrolytic oxidation (PEO). • Coatings are mainly composed of alpha alumina, ZnO and metallic tungsten. • Photocatalytic activity of doped Al_2O_3/ZnO coatings is higher than of undoped ones. • The increase of photoluminescence corresponds to decrease of photocatalytic activity. • Tungsten acts as a charge trap to reduce the recombination rate of electron/hole pairs. - Abstract: Tungsten doped Al_2O_3/ZnO coatings are formed by plasma electrolytic oxidation of aluminum substrate in supporting electrolyte (0.1 M boric acid + 0.05 M borax + 2 g/L ZnO) with addition of different concentrations of Na_2WO_4·2H_2O. The morphology, crystal structure, chemical composition, and light absorption characteristics of formed surface coatings are investigated. The X-ray diffraction and X-ray photoelectron spectroscopy results indicate that formed surface coatings consist of alpha and gamma phase of Al_2O_3, ZnO, metallic tungsten and WO_3. Obtained results showed that incorporated tungsten does not have any influence on the absorption spectra of Al_2O_3/ZnO coatings, which showed invariable band edge at about 385 nm. The photocatalytic activity of undoped and tungsten doped Al_2O_3/ZnO coatings is estimated by the photodegradation of methyl orange. The photocatalytic activity of tungsten doped Al_2O_3/ZnO coatings is higher thanof undoped Al_2O_3/ZnO coatings; the best photocatalytic activity is ascribed to coatings formed in supporting electrolyte with addition of 0.3 g/L Na_2WO_4·2H_2O. Tungsten in Al_2O_3/ZnO coatings acts as a charge trap, thus reducing the recombination rate of photogenerated electron-hole pairs. The results of PL measurements are in agreement with photocatalytic activity. Declining PL intensity corresponds to increasing photocatalytic activity of the coatings, indicating slower recombination of electron-hole pairs.

  20. Origin of green luminescence in hydrothermally grown ZnO single crystals

    Energy Technology Data Exchange (ETDEWEB)

    Čížek, J., E-mail: jakub.cizek@mff.cuni.cz; Hruška, P.; Melikhova, O.; Procházka, I. [Department of Low-Temperature Physics, Charles University in Prague, V Holešovičkách 2, CZ-180 00, Prague 8 (Czech Republic); Valenta, J. [Department of Chemical Physics and Optics, Charles University in Prague, Ke Karlovu 3, CZ-121 16, Prague 2 (Czech Republic); Novotný, M.; Bulíř, J. [Academy of Science of the Czech Republic, Institute of Physics, Na Slovance 2, CZ-182 21 Praha 8 (Czech Republic)

    2015-06-22

    Combining photoluminescence and positron annihilation studies of hydrothermally grown ZnO crystals with stoichiometry varied by controlled annealing enabled us to clarify the origin of green luminescence. It was found that green luminescence in ZnO has multiple origins and consists of a band at 2.3(1) eV due to recombination of electrons of the conduction band by zinc vacancy acceptors coupled with hydrogen and a band at 2.47(2) eV related to oxygen vacancies. The as-grown ZnO crystals contain zinc vacancies associated with hydrogen and exhibit a green luminescence at 2.3(1) eV. Annealing in Zn vapor removed zinc vacancies and introduced oxygen vacancies. This led to disappearance of the green luminescence band at 2.3(1) eV and appearance of a green emission at higher energy of 2.47(2) eV. Moreover, the color of the crystal was changed from colorless to dark red. In contrast, annealing of the as-grown crystal in Cd vapor did not remove zinc vacancies and did not cause any significant change of green luminescence nor change in coloration.

  1. Origin of green luminescence in hydrothermally grown ZnO single crystals

    International Nuclear Information System (INIS)

    Čížek, J.; Hruška, P.; Melikhova, O.; Procházka, I.; Valenta, J.; Novotný, M.; Bulíř, J.

    2015-01-01

    Combining photoluminescence and positron annihilation studies of hydrothermally grown ZnO crystals with stoichiometry varied by controlled annealing enabled us to clarify the origin of green luminescence. It was found that green luminescence in ZnO has multiple origins and consists of a band at 2.3(1) eV due to recombination of electrons of the conduction band by zinc vacancy acceptors coupled with hydrogen and a band at 2.47(2) eV related to oxygen vacancies. The as-grown ZnO crystals contain zinc vacancies associated with hydrogen and exhibit a green luminescence at 2.3(1) eV. Annealing in Zn vapor removed zinc vacancies and introduced oxygen vacancies. This led to disappearance of the green luminescence band at 2.3(1) eV and appearance of a green emission at higher energy of 2.47(2) eV. Moreover, the color of the crystal was changed from colorless to dark red. In contrast, annealing of the as-grown crystal in Cd vapor did not remove zinc vacancies and did not cause any significant change of green luminescence nor change in coloration

  2. Origin of green luminescence in hydrothermally grown ZnO single crystals

    Science.gov (United States)

    Čížek, J.; Valenta, J.; Hruška, P.; Melikhova, O.; Procházka, I.; Novotný, M.; Bulíř, J.

    2015-06-01

    Combining photoluminescence and positron annihilation studies of hydrothermally grown ZnO crystals with stoichiometry varied by controlled annealing enabled us to clarify the origin of green luminescence. It was found that green luminescence in ZnO has multiple origins and consists of a band at 2.3(1) eV due to recombination of electrons of the conduction band by zinc vacancy acceptors coupled with hydrogen and a band at 2.47(2) eV related to oxygen vacancies. The as-grown ZnO crystals contain zinc vacancies associated with hydrogen and exhibit a green luminescence at 2.3(1) eV. Annealing in Zn vapor removed zinc vacancies and introduced oxygen vacancies. This led to disappearance of the green luminescence band at 2.3(1) eV and appearance of a green emission at higher energy of 2.47(2) eV. Moreover, the color of the crystal was changed from colorless to dark red. In contrast, annealing of the as-grown crystal in Cd vapor did not remove zinc vacancies and did not cause any significant change of green luminescence nor change in coloration.

  3. Effect of replacement of tin doped indium oxide (ITO) by ZnO: analysis of environmental impact categories

    Science.gov (United States)

    Ziemińska-Stolarska, Aleksandra; Barecka, Magda; Zbiciński, Ireneusz

    2017-10-01

    Abundant use of natural resources is doubtlessly one of the greatest challenges of sustainable development. Process alternatives, which enable sustainable manufacturing of valuable products from more accessible resources, are consequently required. One of examples of limited resources is Indium, currently broadly used for tin doped indium oxide (ITO) for production of transparent conductive films (TCO) in electronics industry. Therefore, candidates for Indium replacement, which would offer as good performance as the industrial state-of-the-art technology based on ITO are widely studied. However, the environmental impact of new layers remains unknown. Hence, this paper studies the environmental effect of ITO replacement by zinc oxide (ZnO) by means life cycle assessment (LCA) methodology. The analysis enables to quantify the environmental impact over the entire period of life cycle of products—during manufacturing, use phase and waste generation. The analysis was based on experimental data for deposition process. Further, analysis of different impact categories was performed in order to determine specific environmental effects related to technology change. What results from the analysis, is that ZnO is a robust alternative material for ITO replacement regarding environmental load and energy efficiency of deposition process which is also crucial for sustainable TCO layer production.

  4. Photocatalytic Activity and Stability of Porous Polycrystalline ZnO Thin-Films Grown via a Two-Step Thermal Oxidation Process

    Directory of Open Access Journals (Sweden)

    James C. Moore

    2014-08-01

    Full Text Available The photocatalytic activity and stability of thin, polycrystalline ZnO films was studied. The oxidative degradation of organic compounds at the ZnO surface results from the ultraviolet (UV photo-induced creation of highly oxidizing holes and reducing electrons, which combine with surface water to form hydroxyl radicals and reactive oxygen species. Therefore, the efficiency of the electron-hole pair formation is of critical importance for self-cleaning and antimicrobial applications with these metal-oxide catalyst systems. In this study, ZnO thin films were fabricated on sapphire substrates via direct current sputter deposition of Zn-metal films followed by thermal oxidation at several annealing temperatures (300–1200 °C. Due to the ease with which they can be recovered, stabilized films are preferable to nanoparticles or colloidal suspensions for some applications. Characterization of the resulting ZnO thin films through atomic force microscopy and photoluminescence indicated that decreasing annealing temperature leads to smaller crystal grain size and increased UV excitonic emission. The photocatalytic activities were characterized by UV-visible absorption measurements of Rhodamine B dye concentrations. The films oxidized at lower annealing temperatures exhibited higher photocatalytic activity, which is attributed to the increased optical quality. Photocatalytic activity was also found to depend on film thickness, with lower activity observed for thinner films. Decreasing activity with use was found to be the result of decreasing film thickness due to surface etching.

  5. On the transparent conducting oxide Al doped ZnO: First Principles and Boltzmann equations study

    Energy Technology Data Exchange (ETDEWEB)

    Slassi, A. [Institute of Nanomaterials and Nanotechnology, MAScIR, Rabat (Morocco); LMPHE (URAC 12), Faculté des Sciences, Université Mohammed V-Agdal, Rabat (Morocco); Naji, S. [LMPHE (URAC 12), Faculté des Sciences, Université Mohammed V-Agdal, Rabat (Morocco); Department of Physics, Faculty of Science, Ibb University, Ibb (Yemen); Benyoussef, A. [Institute of Nanomaterials and Nanotechnology, MAScIR, Rabat (Morocco); LMPHE (URAC 12), Faculté des Sciences, Université Mohammed V-Agdal, Rabat (Morocco); Hamedoun, M., E-mail: hamedoun@hotmail.com [Institute of Nanomaterials and Nanotechnology, MAScIR, Rabat (Morocco); El Kenz, A. [LMPHE (URAC 12), Faculté des Sciences, Université Mohammed V-Agdal, Rabat (Morocco)

    2014-08-25

    Highlights: • The incorporation of Al in ZnO increases the optical band edge absorption. • Incorporated Al creates shallow donor states of Al-3s around Fermi level. • Transmittance decreases in the visible and IR regions, while it increases in the UV region. • Electrical conductivity increases and reaches almost the saturation for high concentration of Al. - Abstract: We report, in this work, a theoretical study on the electronic, optical and electrical properties of pure and Al doped ZnO with different concentrations. In fact, we investigate these properties using both First Principles calculations within TB-mBJ approximation and Boltzmann equations under the constant relaxation time approximation for charge carriers. It is found out that, the calculated lattice parameters and the optical band gap of pure ZnO are close to the experimental values and in a good agreement with the other theoretical studies. It is also observed that, the incorporations of Al in ZnO increase the optical band edge absorption which leads to a blue shift and no deep impurities levels are induced in the band gap as well. More precisely, these incorporations create shallow donor states around Fermi level in the conduction band minimum from mainly Al-3s orbital. Beside this, it is found that, the transmittance is decreased in the visible and IR regions, while it is significantly improved in UV region. Finally, our calculations show that the electrical conductivity is enhanced as a result of Al doping and it reaches almost the saturation for high concentration of Al. These features make Al doped ZnO a transparent conducting electrode for optoelectronic device applications.

  6. Annealing and surface conduction on Hydrogen peroxide treated bulk melt-grown, single crystal ZnO

    International Nuclear Information System (INIS)

    Mtangi, W.; Nel, J.M.; Auret, F.D.; Chawanda, A.; Diale, M.; Nyamhere, C.

    2012-01-01

    We report on the studies carried out on hydrogen peroxide treated melt-grown, bulk single crystal ZnO samples. Results show the existence of two shallow donors in the as-received ZnO samples with energy levels (37.8±0.3) meV that has been suggested as Zn i related and possibly H-complex related and (54.5±0.9) meV, which has been assigned to an Al-related donor. Annealing studies performed on the hydrogen peroxide treated samples reveal the existence of a conductive channel in the samples in which new energy levels have been observed, Zn vacancies, related to the Group I elements, X Zn . The surface donor volume concentration of the conductive channel was calculated from a theory developed by Look (2007) . Results indicate an increase in the surface volume concentration with increasing annealing temperature from 60×10 17 cm −3 at 200 °C to 4.37×10 18 cm -3 at 800 °C.

  7. Annealing and surface conduction on Hydrogen peroxide treated bulk melt-grown, single crystal ZnO

    Energy Technology Data Exchange (ETDEWEB)

    Mtangi, W., E-mail: wilbert.mtangi@up.ac.za [University of Pretoria, Physics Department, Pretoria 0002 (South Africa); Nel, J.M.; Auret, F.D.; Chawanda, A.; Diale, M. [University of Pretoria, Physics Department, Pretoria 0002 (South Africa); Nyamhere, C. [Nelson Mandela Metropolitan University, Physics Department, P.O. Box 77000, Port Elizabeth 6031 (South Africa)

    2012-05-15

    We report on the studies carried out on hydrogen peroxide treated melt-grown, bulk single crystal ZnO samples. Results show the existence of two shallow donors in the as-received ZnO samples with energy levels (37.8{+-}0.3) meV that has been suggested as Zn{sub i} related and possibly H-complex related and (54.5{+-}0.9) meV, which has been assigned to an Al-related donor. Annealing studies performed on the hydrogen peroxide treated samples reveal the existence of a conductive channel in the samples in which new energy levels have been observed, Zn vacancies, related to the Group I elements, X{sub Zn}. The surface donor volume concentration of the conductive channel was calculated from a theory developed by Look (2007) . Results indicate an increase in the surface volume concentration with increasing annealing temperature from 60 Multiplication-Sign 10{sup 17} cm{sup -3} at 200 Degree-Sign C to 4.37 Multiplication-Sign 10{sup 18} cm{sup -3} at 800 Degree-Sign C.

  8. Selective Oxidation of Styrene to Benzaldehyde by Co-Ag Codoped ZnO Catalyst and H2O2 as Oxidant

    Directory of Open Access Journals (Sweden)

    Abderrazak Aberkouks

    2018-01-01

    Full Text Available Various ratio of Co-Ag supported on ZnO have been evaluated in the selective catalytic oxidation of styrene to benzaldehyde, using H2O2 as an oxidant. The catalysts were prepared by a sol-gel process and were characterized using XRD, FT-IR, TG-DTG, BET, and SEM/EDX. The performance of the prepared catalyst was investigated under different parameters such as solvent, temperature, substrate/oxidant molar ratios, reaction time, and doping percent. The Zn1−x−yAgxCoyO catalysts exhibit a good activity and a high selectivity towards benzaldehyde (95% with the formation of only 5% of acetophenone.

  9. High-performance zno transistors processed via an aqueous carbon-free metal oxide precursor route at temperatures between 80-180 °c

    KAUST Repository

    Lin, Yenhung; Faber, Hendrik; Zhao, Kui; Wang, Qingxiao; Amassian, Aram; McLachlan, Martyn A.; Anthopoulos, Thomas D.

    2013-01-01

    An aqueous and carbon-free metal-oxide precursor route is used in combination with a UV irradiation-assisted low-temperature conversion method to fabricate low-voltage ZnO transistors with electron mobilities exceeding 10 cm2/Vs at temperatures <

  10. A single-source precursor route to anisotropic halogen-doped zinc oxide particles as a promising candidate for new transparent conducting oxide materials

    Directory of Open Access Journals (Sweden)

    Daniela Lehr

    2015-11-01

    Full Text Available Numerous applications in optoelectronics require electrically conducting materials with high optical transparency over the entire visible light range. A solid solution of indium oxide and substantial amounts of tin oxide for electronic doping (ITO is currently the most prominent example for the class of so-called TCOs (transparent conducting oxides. Due to the limited, natural occurrence of indium and its steadily increasing price, it is highly desired to identify materials alternatives containing highly abundant chemical elements. The doping of other metal oxides (e.g., zinc oxide, ZnO is a promising approach, but two problems can be identified. Phase separation might occur at the required high concentration of the doping element, and for successful electronic modification it is mandatory that the introduced heteroelement occupies a defined position in the lattice of the host material. In the case of ZnO, most attention has been attributed so far to n-doping via substitution of Zn2+ by other metals (e.g., Al3+. Here, we present first steps towards n-doped ZnO-based TCO materials via substitution in the anion lattice (O2− versus halogenides. A special approach is presented, using novel single-source precursors containing a potential excerpt of the target lattice 'HalZn·Zn3O3' preorganized on the molecular scale (Hal = I, Br, Cl. We report about the synthesis of the precursors, their transformation into halogene-containing ZnO materials, and finally structural, optical and electronic properties are investigated using a combination of techniques including FT-Raman, low-T photoluminescence, impedance and THz spectroscopies.

  11. Photoluminescence properties of ZnO films grown on InP by thermally oxidizing metallic Zn films

    CERN Document Server

    Chen, S J; Zhang, J Y; Lu, Y M; Shen, D Z; Fan, X W

    2003-01-01

    Photoluminescence (PL) properties of ZnO films grown on (001) InP substrates by thermal oxidization of metallic Zn films, in which oxygen vacancies and interstitial Zn ions are compensated by P ions diffusing from (001) InP substrates, are investigated. X-ray diffraction spectra indicate that P ions have diffused into the Zn films and chemically combined with Zn ions to form Zn sub 3 P sub 2. Intense free exciton emission dominates the PL spectra of ZnO films with very weak deep-level emission. Low-temperature PL spectra at 79 K are dominated by neutral-donor bound exciton emission at 3.299 eV (I sub 4) with a linewidth of 17.3 meV and neutral-acceptor bound exciton emission at 3.264 eV. The free exciton emission increases with increasing temperature and eventually dominates the emission spectrum for temperature higher than 170 K. Furthermore, the visible emission around 2.3 eV correlated with oxygen deficiencies and interstitial Zn defects was quenched to a remarkable degree by P diffusing from InP substrate...

  12. Photoluminescence properties of ZnO films grown on InP by thermally oxidizing metallic Zn films

    International Nuclear Information System (INIS)

    Chen, S J; Liu, Y C; Zhang, J Y; Lu, Y M; Shen, D Z; Fan, X W

    2003-01-01

    Photoluminescence (PL) properties of ZnO films grown on (001) InP substrates by thermal oxidization of metallic Zn films, in which oxygen vacancies and interstitial Zn ions are compensated by P ions diffusing from (001) InP substrates, are investigated. X-ray diffraction spectra indicate that P ions have diffused into the Zn films and chemically combined with Zn ions to form Zn 3 P 2 . Intense free exciton emission dominates the PL spectra of ZnO films with very weak deep-level emission. Low-temperature PL spectra at 79 K are dominated by neutral-donor bound exciton emission at 3.299 eV (I 4 ) with a linewidth of 17.3 meV and neutral-acceptor bound exciton emission at 3.264 eV. The free exciton emission increases with increasing temperature and eventually dominates the emission spectrum for temperature higher than 170 K. Furthermore, the visible emission around 2.3 eV correlated with oxygen deficiencies and interstitial Zn defects was quenched to a remarkable degree by P diffusing from InP substrates

  13. SiO2/ZnO Composite Hollow Sub-Micron Fibers: Fabrication from Facile Single Capillary Electrospinning and Their Photoluminescence Properties

    Directory of Open Access Journals (Sweden)

    Guanying Song

    2017-02-01

    Full Text Available In this work, SiO2/ZnO composite hollow sub-micron fibers were fabricated by a facile single capillary electrospinning technique followed by calcination, using tetraethyl orthosilicate (TEOS, polyvinylpyrrolidone (PVP and ZnO nanoparticles as raw materials. The characterization results of the scanning electron microscopy (SEM, transmission electron microscopy (TEM, X-ray diffraction (XRD and Fourier transform infrared spectroscopy (FT-IR spectra indicated that the asprepared composite hollow fibers consisted of amorphous SiO2 and hexagonal wurtzite ZnO. The products revealed uniform tubular structure with outer diameters of 400–500 nm and wall thickness of 50–60 nm. The gases generated and the directional escaped mechanism was proposed to illustrate the formation of SiO2/ZnO composite hollow sub-micron fibers. Furthermore, a broad blue emission band was observed in the photoluminescence (PL of SiO2/ZnO composite hollow sub-micron fibers, exhibiting great potential applications as blue light-emitting candidate materials.

  14. Nuclear reaction analysis of Ge ion-implanted ZnO bulk single crystals: The evaluation of the displacement in oxygen lattices

    Energy Technology Data Exchange (ETDEWEB)

    Kamioka, K.; Oga, T.; Izawa, Y. [College of Engineering and Research Center of Ion Beam Technology, Hosei University, Koganei, Tokyo 184-8584 (Japan); Kuriyama, K., E-mail: kuri@ionbeam.hosei.ac.jp [College of Engineering and Research Center of Ion Beam Technology, Hosei University, Koganei, Tokyo 184-8584 (Japan); Kushida, K. [Department of Arts and Science, Osaka Kyouiku University, Kashiwara, Osaka 582-8582 (Japan); Kinomura, A. [National Institute of Advanced Industrial Science and Technology, Tsukuba, Ibaraki 305-8568 (Japan)

    2014-08-01

    The displacement of oxygen lattices in Ge ion-implanted ZnO bulk single crystals is studied by nuclear reaction analysis (NAR), photoluminescence (PL), and Van der Pauw methods. The Ge ion-implantation (net concentration: 2.6 × 10{sup 20} cm{sup −3}) into ZnO is performed using a multiple-step energy. The high resistivity of ∼10{sup 3} Ω cm in un-implanted samples remarkably decreased to ∼10{sup −2} Ω cm after implanting Ge-ion and annealing subsequently. NRA measurements of as-implanted and annealed samples suggest the existence of the lattice displacement of O atoms acting as acceptor defects. As O related defects still remain after annealing, these defects are not attributed to the origin of the low resistivity in 800 and 1000 °C annealed ZnO.

  15. Nuclear reaction analysis of Ge ion-implanted ZnO bulk single crystals: The evaluation of the displacement in oxygen lattices

    Science.gov (United States)

    Kamioka, K.; Oga, T.; Izawa, Y.; Kuriyama, K.; Kushida, K.; Kinomura, A.

    2014-08-01

    The displacement of oxygen lattices in Ge ion-implanted ZnO bulk single crystals is studied by nuclear reaction analysis (NAR), photoluminescence (PL), and Van der Pauw methods. The Ge ion-implantation (net concentration: 2.6 × 1020 cm-3) into ZnO is performed using a multiple-step energy. The high resistivity of ∼103 Ω cm in un-implanted samples remarkably decreased to ∼10-2 Ω cm after implanting Ge-ion and annealing subsequently. NRA measurements of as-implanted and annealed samples suggest the existence of the lattice displacement of O atoms acting as acceptor defects. As O related defects still remain after annealing, these defects are not attributed to the origin of the low resistivity in 800 and 1000 °C annealed ZnO.

  16. Persistent photoconductivity and photo-responsible defect in 30 MeV-electron irradiated single crystal ZnO

    International Nuclear Information System (INIS)

    Kuriyama, K.; Matsumoto, K.; Kushida, K.; Xu, Q.

    2010-01-01

    Persistent photoconductivity (PPC) in 30-MeV electron irradiated ZnO single crystals is studied by excitation using light emitting diodes (LEDs) with various wavelengths. The decay transient of the photoconductivity shows relaxation times in the range of a few ten days for the illumination at 90 K and a few hours at room temperature. An electron paramagnetic resonance (EPR) signal with g-value = 2.005 appears after illumination of blue LED, suggesting the transfer from the artificially introduced oxygen vacancy of 2+ charge state to the metastable + charge state. Once generated, the metastable state does not immediately decay into the 2+ charge state because of energetic barriers of ∼190 meV, supporting the mechanism of PPC proposed by Van de Walle.

  17. A Comparative Study on Structural and Optical Properties of ZnO Micro-Nanorod Arrays Grown on Seed Layers Using Chemical Bath Deposition and Spin Coating Methods

    Directory of Open Access Journals (Sweden)

    Sibel MORKOÇ KARADENİZ

    2016-11-01

    Full Text Available In this study, Zinc Oxide (ZnO seed layers were prepared on Indium Tin Oxide (ITO substrates by using Chemical Bath Deposition (CBD method and Sol-gel Spin Coating (SC method. ZnO micro-nanorod arrays were grown on ZnO seed layers by using Hydrothermal Synthesis method. Seed layer effects of structural and optical properties of ZnO arrays were characterized. X-ray diffractometer (XRD, Scanning Electron Microscopy (SEM and Ultraviolet Visible (UV-Vis Spectrometer were used for analyses. ZnO micro-nanorod arrays consisted of a single crystalline wurtzite ZnO structure for each seed layer. Besides, ZnO rod arrays were grown smoothly and vertically on SC seed layer, while ZnO rod arrays were grown randomly and flower like structures on CBD seed layer. The optical absorbance peaks found at 422 nm wavelength in the visible region for both ZnO arrays. Optical bandgap values were determined by using UV-Vis measurements at 3.12 and 3.15 eV for ZnO micro-nanorod arrays on CBD seed layer and for ZnO micro-nanorod arrays on SC-seed layer respectively.DOI: http://dx.doi.org/10.5755/j01.ms.22.4.13443

  18. ZnO nanowire-based nano-floating gate memory with Pt nanocrystals embedded in Al{sub 2}O{sub 3} gate oxides

    Energy Technology Data Exchange (ETDEWEB)

    Yeom, Donghyuk; Kang, Jeongmin; Lee, Myoungwon; Jang, Jaewon; Yun, Junggwon; Jeong, Dong-Young; Yoon, Changjoon; Koo, Jamin; Kim, Sangsig [Department of Electrical Engineering and Institute for Nano Science, Korea University, Seoul 136-701 (Korea, Republic of)], E-mail: sangsig@korea.ac.kr

    2008-10-01

    The memory characteristics of ZnO nanowire-based nano-floating gate memory (NFGM) with Pt nanocrystals acting as the floating gate nodes were investigated in this work. Pt nanocrystals were embedded between Al{sub 2}O{sub 3} tunneling and control oxide layers deposited on ZnO nanowire channels. For a representative ZnO nanowire-based NFGM with embedded Pt nanocrystals, a threshold voltage shift of 3.8 V was observed in its drain current versus gate voltage (I{sub DS}-V{sub GS}) measurements for a double sweep of the gate voltage, revealing that the deep effective potential wells built into the nanocrystals provide our NFGM with a large charge storage capacity. Details of the charge storage effect observed in this memory device are discussed in this paper.

  19. ZnO nanowire-based nano-floating gate memory with Pt nanocrystals embedded in Al2O3 gate oxides

    International Nuclear Information System (INIS)

    Yeom, Donghyuk; Kang, Jeongmin; Lee, Myoungwon; Jang, Jaewon; Yun, Junggwon; Jeong, Dong-Young; Yoon, Changjoon; Koo, Jamin; Kim, Sangsig

    2008-01-01

    The memory characteristics of ZnO nanowire-based nano-floating gate memory (NFGM) with Pt nanocrystals acting as the floating gate nodes were investigated in this work. Pt nanocrystals were embedded between Al 2 O 3 tunneling and control oxide layers deposited on ZnO nanowire channels. For a representative ZnO nanowire-based NFGM with embedded Pt nanocrystals, a threshold voltage shift of 3.8 V was observed in its drain current versus gate voltage (I DS -V GS ) measurements for a double sweep of the gate voltage, revealing that the deep effective potential wells built into the nanocrystals provide our NFGM with a large charge storage capacity. Details of the charge storage effect observed in this memory device are discussed in this paper

  20. P-type single-crystalline ZnO films obtained by (N,O) dual implantation through dynamic annealing process

    Science.gov (United States)

    Zhang, Zhiyuan; Huang, Jingyun; Chen, Shanshan; Pan, Xinhua; Chen, Lingxiang; Ye, Zhizhen

    2016-12-01

    Single-crystalline ZnO films were grown on a-plane sapphire substrates by plasma-assisted molecular beam epitaxy technique. The films have been implanted with fixed fluence of 120 keV N and 130 keV O ions at 460 °C. Hall measurements show that the dually-implanted single-crystalline ZnO films exhibit p-type characteristics with hole concentration in the range of 2.1 × 1018-1.1 × 1019 cm-3, hole mobilities between 1.6 and 1.9 cm2 V-1 s-1, and resistivities in the range of 0.353-1.555 Ω cm. The ZnO films exhibit (002) (c-plane) orientation as identified by the X-ray diffraction pattern. It is confirmed that N ions were effectively implanted by SIMS results. Raman spectra, polarized Raman spectra, and X-ray photoelectron spectroscopy results reflect that the concentration of oxygen vacancies is reduced, which is attributed to O ion implantation. It is concluded that N and O implantation and dynamic annealing play a critical role in forming p-type single-crystalline ZnO films.

  1. Ternary Oxides in the TiO2-ZnO System as Efficient Electron-Transport Layers for Perovskite Solar Cells with Efficiency over 15.

    Science.gov (United States)

    Yin, Xiong; Xu, Zhongzhong; Guo, Yanjun; Xu, Peng; He, Meng

    2016-11-02

    Perovskite solar cells, which utilize organometal-halide perovskites as light-harvesting materials, have attracted great attention due to their high power conversion efficiency (PCE) and potentially low cost in fabrication. A compact layer of TiO 2 or ZnO is generally applied as electron-transport layer (ETL) in a typical perovskite solar cell. In this study, we explored ternary oxides in the TiO 2 -ZnO system to find new materials for the ETL. Compact layers of titanium zinc oxides were readily prepared on the conducting substrate via spray pyrolysis method. The optical band gap, valence band maximum and conduction band minimum of the ternary oxides varied significantly with the ratio of Ti to Zn, surprisingly, in a nonmonotonic way. When a zinc-rich ternary oxide was applied as ETL for the device, a PCE of 15.10% was achieved, comparable to that of the device using conventional TiO 2 ETL. Interestingly, the perovskite layer deposited on the zinc-rich ternary oxide is stable, in sharp contrast with that fabricated on a ZnO layer, which will turn into PbI 2 readily when heated. These results indicate that potentially new materials with better performance can be found for ETL of perovskite solar cells in ternary oxides, which deserve more exploration.

  2. ZnO nanodisk based UV detectors with printed electrodes.

    Science.gov (United States)

    Alenezi, Mohammad R; Alshammari, Abdullah S; Alzanki, Talal H; Jarowski, Peter; Henley, Simon John; Silva, S Ravi P

    2014-04-08

    The fabrication of highly functional materials for practical devices requires a deep understanding of the association between morphological and structural properties and applications. A controlled hydrothermal method to produce single crystal ZnO hexagonal nanodisks, nanorings, and nanoroses using a mixed solution of zinc sulfate (ZnSO4) and hexamethylenetetramine (HMTA) without the need of catalysts, substrates, or templates at low temperature (75 °C) is introduced. Metal-semiconductor-metal (MSM) ultraviolet (UV) detectors were fabricated based on individual and multiple single-crystal zinc oxide (ZnO) hexagonal nanodisks. High quality single crystal individual nanodisk devices were fabricated with inkjet-printed silver electrodes. The detectors fabricated show record photoresponsivity (3300 A/W) and external quantum efficiency (1.2 × 10(4)), which we attribute to the absence of grain boundaries in the single crystal ZnO nanodisk and the polarity of its exposed surface.

  3. Hybrid nanostructure heterojunction solar cells fabricated using vertically aligned ZnO nanotubes grown on reduced graphene oxide.

    Science.gov (United States)

    Yang, Kaikun; Xu, Congkang; Huang, Liwei; Zou, Lianfeng; Wang, Howard

    2011-10-07

    Using reduced graphene oxide (rGO) films as the transparent conductive coating, inorganic/organic hybrid nanostructure heterojunction photovoltaic devices have been fabricated through hydrothermal synthesis of vertically aligned ZnO nanorods (ZnO-NRs) and nanotubes (ZnO-NTs) on rGO films followed by the spin casting of a poly(3-hexylthiophene) (P3HT) film. The data show that larger interfacial area in ZnO-NT/P3HT composites improves the exciton dissociation and the higher electrode conductance of rGO films helps the power output. This study offers an alternative to manufacturing nanostructure heterojunction solar cells at low temperatures using potentially low cost materials.

  4. Optical study of gamma irradiated sodium metaphosphate glasses containing divalent metal oxide MO (ZnO or CdO

    Directory of Open Access Journals (Sweden)

    E. Nabhan

    Full Text Available Sodium metaphosphate glasses containing divalent metal oxide, ZnO or CdO with composition 50 P2O5 – (50 − x Na2O – x MO (ZnO, or CdO where x = 0, 10, 20 (mol% were prepared by conventional melt method. UV/visible spectroscopy and FTIR spectroscopy are measured before and after exposing to successive gamma irradiation doses (5–80 kGy. The optical absorption spectra results of the samples before irradiation reveal a strong UV absorption band at (∼230 nm which is related to unavoided iron impurities. The effects of gamma irradiation on the optical spectral properties of the various glasses have been compared. From the optical absorption spectral data, the optical band gap is evaluated. The main structural groups and the influence of both divalent metal oxide and gamma irradiation effect on the structural vibrational groups are realized through IR spectroscopy. The FTIR spectra of γ-irradiated samples are characterized by the stability of the number and position for the main characteristic band of phosphate groups. To better understood the structural changes during γ-irradiation, a deconvolution of FTIR spectra in the range 650–1450 cm−1 is made. The FTIR deconvolution results found evidence that, the changes occurring after gamma irradiation have been related to irradiation induced structural defects and compositional changes. Keywords: Sodium metaphosphate glass, UV–visible spectra, IR spectra, Deconvolution, Optical band gap, Gamma ray

  5. Oxidative Stress and Nano-Toxicity Induced by TiO2 and ZnO on WAG Cell Line.

    Directory of Open Access Journals (Sweden)

    Akhilesh Dubey

    Full Text Available Metallic nanoparticles are widely used in cosmetics, food products and textile industry. These particles are known to cause respiratory toxicity and epithelial inflammation. They are eventually released to aquatic environment necessitating toxicity studies in cells from respiratory organs of aquatic organisms. Hence, we have developed and characterized a new cell line, WAG, from gill tissue of Wallago attu for toxicity assessment of TiO2 and ZnO nanoparticles. The efficacy of the cell line as an in vitro system for nanoparticles toxicity studies was established using electron microscopy, cytotoxicity assays, genotoxicity assays and oxidative stress biomarkers. Results obtained with MTT assay, neutral red uptake assay and lactate dehydrogenase assay showed acute toxicity to WAG cells with IC50 values of 25.29 ± 0.12, 34.99 ± 0.09 and 35.06 ± 0.09 mg/l for TiO2 and 5.716 ± 0.1, 3.160 ± 0.1 and 5.57 ± 0.12 mg/l for ZnO treatment respectively. The physicochemical properties and size distribution of nanoparticles were characterized using electron microscopy with integrated energy dispersive X-ray spectroscopy and Zetasizer. Dose dependent increase in DNA damage, lipid peroxidation and protein carbonylation along with a significant decrease in activity of Superoxide Dismutase, Catalase, total Glutathione levels and total antioxidant capacity with increasing concentration of exposed nanoparticles indicated that the cells were under oxidative stress. The study established WAG cell line as an in vitro system to study toxicity mechanisms of nanoparticles on aquatic organisms.

  6. Synthesis and characterization of ZnO and Ni doped ZnO nanorods by thermal decomposition method for spintronics application

    International Nuclear Information System (INIS)

    Saravanan, R.; Santhi, Kalavathy; Sivakumar, N.; Narayanan, V.; Stephen, A.

    2012-01-01

    Zinc oxide nanorods and diluted magnetic semiconducting Ni doped ZnO nanorods were prepared by thermal decomposition method. This method is simple and cost effective. The decomposition temperature of acetate and formation of oxide were determined by TGA before the actual synthesis process. The X-ray diffraction result indicates the single phase hexagonal structure of zinc oxide. The transmission electron microscopy and scanning electron microscopy images show rod like structure of ZnO and Ni doped ZnO samples with the diameter ∼ 35 nm and the length in few micrometers. The surface analysis was performed using X-ray photoelectron spectroscopic studies. The Ni doped ZnO exhibits room temperature ferromagnetism. This diluted magnetic semiconducting Ni doped ZnO nanorods finds its application in spintronics. - Highlights: ► The method used is very simple and cost effective compared to all other methods for the preparation DMS materials. ► ZnO and Ni doped ZnO nanorods ► Ferromagnetism at room temperature

  7. On single doping and co-doping of spray pyrolysed ZnO films: Structural, electrical and optical characterisation

    International Nuclear Information System (INIS)

    Vimalkumar, T.V.; Poornima, N.; Jinesh, K.B.; Kartha, C. Sudha; Vijayakumar, K.P.

    2011-01-01

    In this paper we present studies on ZnO thin films (prepared using Chemical Spray pyrolysis (CSP) technique) doped in two different ways; in one set, 'single doping' using indium was done while in the second set, 'co-doping' using indium and fluorine was adopted. In the former case, effect of in-situ as well as ex-situ doping using In was analyzed. Structural (XRD studies), electrical (I-V measurements) and optical characterizations (through absorption, transmission and photoluminescence studies) of the films were done. XRD analysis showed that, for spray-deposited ZnO films, ex-situ doping using Indium resulted in preferred (0 0 2) plane orientation, while in-situ doping caused preferred orientation along (1 0 0), (0 0 2), (1 0 1) planes; however for higher percentage of in-situ doping, orientation of grains changed from (0 0 2) plane to (1 0 1) plane. The co-doped films had (0 0 2) and (1 0 1) planes. Lowest resistivity (2 x 10 -3 Ω cm) was achieved for the films, doped with 1% Indium through in-situ method. Photoluminescence (PL) emissions of ex-situ doped and co-doped samples had two peaks; one was the 'near band edge' emission (NBE) and the other was the 'blue-green' emission. But interestingly the PL emission of in-situ doped samples exhibited only the 'near band edge' emission. Optical band gap of the films increased with doping percentage, in all cases of doping.

  8. Cytotoxicity of zinc oxide (ZnO) nanoparticles is influenced by cell density and culture format.

    Science.gov (United States)

    Heng, Boon Chin; Zhao, Xinxin; Xiong, Sijing; Ng, Kee Woei; Boey, Freddy Yin-Chiang; Loo, Joachim Say-Chye

    2011-06-01

    A parameter that has often been overlooked in cytotoxicity assays is the density and confluency of mammalian cell monolayers utilized for toxicology screening. Hence, this study investigated how different cell seeding densities influenced their response to cytotoxic challenge with ZnO nanoparticles. Utilizing the same volume (1 ml per well) and concentration range (5-40 μg/ml) of ZnO nanoparticles, contradictory results were observed with higher-density cell monolayers (BEAS-2B cells) obtained either by increasing the number of seeded cells per well (50,000 vs. 200,000 cells per well of 12-well plate) or by seeding the same numbers of cells (50,000) within a smaller surface area (12-well vs. 48-well plate, 4.8 vs. 1.2 cm(2), respectively). Further experiments demonstrated that the data may be skewed by inconsistency in the mass/number of nanoparticles per unit area of culture surface, as well as by inconsistent nanoparticle to cell ratio. To keep these parameters constant, the same number of cells (50,000 per well) were seeded on 12-well plates, but with the cells being seeded at the edge of the well for the experimental group (by tilting the plate) to form a dense confluent monolayer, as opposed to a sparse monolayer for the control group seeded in the conventional manner. Utilizing such an experimental set-up for the comparative evaluation of four different cell lines (BEAS-2B, L-929, CRL-2922 and C2C12), it was observed that the high cell density monolayer was consistently more resistant to the cytotoxic effects of ZnO nanoparticles compared to the sparse monolayer for all four different cell types, with the greatest differences being observed above a ZnO concentration of 10 μg/ml. Hence, the results of this study demonstrate the need for the standardization of cell culture protocols utilized for toxicology screening of nanoparticles, with respect to cell density and mass/number of nanoparticles per unit area of culture surface.

  9. In2Ga2ZnO7 oxide semiconductor based charge trap device for NAND flash memory

    Science.gov (United States)

    Hwang, Eun Suk; Kim, Jun Shik; Jeon, Seok Min; Lee, Seung Jun; Jang, Younjin; Cho, Deok-Yong; Hwang, Cheol Seong

    2018-04-01

    The programming characteristics of charge trap flash memory device adopting amorphous In2Ga2ZnO7 (a-IGZO) oxide semiconductors as channel layer were evaluated. Metal-organic chemical vapor deposition (MOCVD) and RF-sputtering processes were used to grow a 45 nm thick a-IGZO layer on a 20 nm thick SiO2 (blocking oxide)/p++-Si (control gate) substrate, where 3 nm thick atomic layer deposited Al2O3 (tunneling oxide) and 5 nm thick low-pressure CVD Si3N4 (charge trap) layers were intervened between the a-IGZO and substrate. Despite the identical stoichiometry and other physicochemical properties of the MOCVD and sputtered a-IGZO, a much faster programming speed of MOCVD a-IGZO was observed. A comparable amount of oxygen vacancies was found in both MOCVD and sputtered a-IGZO, confirmed by x-ray photoelectron spectroscopy and bias-illumination-instability test measurements. Ultraviolet photoelectron spectroscopy analysis revealed a higher Fermi level (E F) of the MOCVD a-IGZO (∼0.3 eV) film than that of the sputtered a-IGZO, which could be ascribed to the higher hydrogen concentration in the MOCVD a-IGZO film. Since the programming in a flash memory device is governed by the tunneling of electrons from the channel to charge trapping layer, the faster programming performance could be the result of a higher E F of MOCVD a-IGZO.

  10. Room temperature inorganic polycondensation of oxide (Cu2O and ZnO) nanoparticles and thin films preparation by the dip-coating technique

    International Nuclear Information System (INIS)

    Salek, G.; Tenailleau, C.; Dufour, P.; Guillemet-Fritsch, S.

    2015-01-01

    Oxide thin solid films were prepared by dip-coating into colloidal dispersions of oxide nanoparticles stabilized at room temperature without the use of chelating or complex organic dispersing agents. Crystalline oxide nanoparticles were obtained by inorganic polycondensation and characterized by X-ray diffraction and field emission gun scanning electron microscopy. Water and ethanol synthesis and solution stabilization of oxide nanoparticle method was optimized to prepare two different structural and compositional materials, namely Cu 2 O and ZnO. The influence of hydrodynamic parameters over the particle shape and size is discussed. Spherical and rod shape nanoparticles were formed for Cu 2 O and ZnO, respectively. Isoelectric point values of 7.5 and 8.2 were determined for cuprous and zinc oxides, respectively, after zeta potential measurements. A shear thinning and thixotropic behavior was observed in both colloidal sols after peptization at pH ~ 6 with dilute nitric acid. Every colloidal dispersion stabilized in a low cost and environmentally friendly azeotrope solution composed of 96 vol.% of ethanol with water was used for the thin film preparation by the dip-coating technique. Optical properties of the light absorber cuprous oxide and transparent zinc oxide thin solid films were characterized by means of transmittance and reflectance measurements (300–1100 nm). - Highlights: • Room temperature inorganic polycondensation of crystalline oxides • Water and ethanol synthesis and solution stabilization of oxide nanoparticles • Low cost method for thin solid film preparation

  11. Room temperature inorganic polycondensation of oxide (Cu{sub 2}O and ZnO) nanoparticles and thin films preparation by the dip-coating technique

    Energy Technology Data Exchange (ETDEWEB)

    Salek, G.; Tenailleau, C., E-mail: tenailleau@chimie.ups-tlse.fr; Dufour, P.; Guillemet-Fritsch, S.

    2015-08-31

    Oxide thin solid films were prepared by dip-coating into colloidal dispersions of oxide nanoparticles stabilized at room temperature without the use of chelating or complex organic dispersing agents. Crystalline oxide nanoparticles were obtained by inorganic polycondensation and characterized by X-ray diffraction and field emission gun scanning electron microscopy. Water and ethanol synthesis and solution stabilization of oxide nanoparticle method was optimized to prepare two different structural and compositional materials, namely Cu{sub 2}O and ZnO. The influence of hydrodynamic parameters over the particle shape and size is discussed. Spherical and rod shape nanoparticles were formed for Cu{sub 2}O and ZnO, respectively. Isoelectric point values of 7.5 and 8.2 were determined for cuprous and zinc oxides, respectively, after zeta potential measurements. A shear thinning and thixotropic behavior was observed in both colloidal sols after peptization at pH ~ 6 with dilute nitric acid. Every colloidal dispersion stabilized in a low cost and environmentally friendly azeotrope solution composed of 96 vol.% of ethanol with water was used for the thin film preparation by the dip-coating technique. Optical properties of the light absorber cuprous oxide and transparent zinc oxide thin solid films were characterized by means of transmittance and reflectance measurements (300–1100 nm). - Highlights: • Room temperature inorganic polycondensation of crystalline oxides • Water and ethanol synthesis and solution stabilization of oxide nanoparticles • Low cost method for thin solid film preparation.

  12. Influence of Mg doping on ZnO nanoparticles decorated on graphene oxide (GO) crumpled paper like sheet and its high photo catalytic performance under sunlight

    Science.gov (United States)

    Labhane, P. K.; Sonawane, S. H.; Sonawane, G. H.; Patil, S. P.; Huse, V. R.

    2018-03-01

    Mg doped ZnO nanoparticles decorated on graphene oxide (GO) sheets were synthesized by a wet impregnation method. The effect of Mg doping on ZnO and ZnO-GO composite has been evaluated by using x-ray diffraction (XRD), Williamson-Hall Plot (Wsbnd H Plot), field emission scanning electron microscope (FESEM), transmission electron microscopy (TEM) and energy dispersive x-ray spectroscopy (EDX). The physical parameters of as-prepared samples were estimated by XRD data. FESEM and HR-TEM images showed the uniform distribution of nanoparticles on GO crumpled paper like sheet. Solar light photocatalytic activities of samples were evaluated spectrophotometrically by the degradation of p-nitrophenol (PNP) and indigo carmine (IC) solution. Mgsbnd ZnO decorated on GO sheets exhibit excellent catalytic efficiency compared to all other prepared samples under identical conditions, degrading PNP and IC nearly 99% within 60 min under sunlight. The effective degradation by Mgsbnd ZnO decorated on GO sheet would be due to extended solar light absorption, enhanced adsorptivity on the composite catalyst surface and efficient charge separation of photo-induced electrons. Finally, plausible mechanism was suggested with the help of scavengers study.

  13. P-type single-crystalline ZnO films obtained by (Na,N) dual implantation through dynamic annealing process

    Science.gov (United States)

    Zhang, Zhiyuan; Huang, Jingyun; Chen, Shanshan; Pan, Xinhua; Chen, Lingxiang; Ye, Zhizhen

    2018-02-01

    Single-crystalline ZnO films were grown by plasma-assisted molecular beam epitaxy technique on c-plane sapphire substrates. The films have been implanted with fixed fluence of 130 keV Na and 90 keV N ions at 460 °C. It is observed that dually-implanted single crystalline ZnO films exhibit p-type characteristics with hole concentration in the range of 1.24 × 1016-1.34 × 1017 cm-3, hole mobilities between 0.65 and 8.37 cm2 V-1 s-1, and resistivities in the range of 53.3-80.7 Ω cm by Hall-effect measurements. There are no other secondary phase appearing, with (0 0 2) (c-plane) orientation after ion implantation as identified by the X-ray diffraction pattern. It is obtained that Na and N ions were successfully implanted and activated as acceptors measured by XPS and SIMS results. Also compared to other similar studies, lower amount of Na and N ions make p-type characteristics excellent as others deposited by traditional techniques. It is concluded that Na and N ion implantation and dynamic annealing are essential in forming p-type single-crystalline ZnO films.

  14. Phonon Confinement Induced Non-Concomitant Near-Infrared Emission along a Single ZnO Nanowire: Spatial Evolution Study of Phononic and Photonic Properties

    Directory of Open Access Journals (Sweden)

    Po-Hsun Shih

    2017-10-01

    Full Text Available The impact of mixed defects on ZnO phononic and photonic properties at the nanoscale is only now being investigated. Here we report an effective strategy to study the distribution of defects along the growth direction of a single ZnO nanowire (NW, performed qualitatively as well as quantitatively using energy dispersive spectroscopy (EDS, confocal Raman-, and photoluminescence (PL-mapping technique. A non-concomitant near-infrared (NIR emission of 1.53 ± 0.01 eV was observed near the bottom region of 2.05 ± 0.05 μm along a single ZnO NW and could be successfully explained by the radiative recombination of shallowly trapped electrons V_O^(** with deeply trapped holes at V_Zn^''. A linear chain model modified from a phonon confinement model was used to describe the growth of short-range correlations between the mean distance of defects and its evolution with spatial position along the axial growth direction by fitting the E2H mode. Our results are expected to provide new insights into improving the study of the photonic and photonic properties of a single nanowire.

  15. Bulk ZnO: Current Status, Challenges, and Prospects

    Science.gov (United States)

    2009-04-01

    von Wenckstern, H. Schmidt, M. Lorenz, and M. Grundmann, “Defects in virgin and N+-implanted ZnO single crystals studied by positron annihilation...characterization, and device applications of semiconductor and complex oxide thin films. He is a co-author of more than 50 papers in referred...REPLACE THIS LINE WITH YOUR PAPER IDENTIFICATION NUMBER (DOUBLE-CLICK HERE TO EDIT) < 1 Abstract— Rediscovered in the last decade, zinc oxide

  16. Human eosinophils are direct targets to nanoparticles: Zinc oxide nanoparticles (ZnO) delay apoptosis and increase the production of the pro-inflammatory cytokines IL-1β and IL-8.

    Science.gov (United States)

    Silva, Luis Rafael; Girard, Denis

    2016-09-30

    Zinc oxide NPs (ZnO) have been recently proposed as novel candidates for the treatment of allergic inflammatory diseases. Paradoxically, recent data suggested that ZnO could cause eosinophilic airway inflammation in rodents. Despite the above observations, there are currently no studies reporting direct interaction between a given NP and human eosinophils themselves. In this study, freshly isolated human eosinophils were incubated with ZnO and several cellular functions were studied. We found that ZnO delay human eosinophil apoptosis, partially by inhibiting caspases and by preventing caspase-4 and Bcl-xL degradation. ZnO do not induce production of reactive oxygen species but increase de novo protein synthesis. In addition, ZnO were found to increase the production of the proinflammatory IL-1β and IL-8 cytokines. Using a pharmacological approach, we demonstrated that inhibition of caspase-1 reversed the ability of ZnO to induce IL-1β and IL-8 production, whereas inhibition of caspase-4 only reversed that of IL-8. Our results indicate the necessity of conducting studies to determine the potential of using NP as nanotherapies, particularly in diseases in which eosinophils may be involved. We conclude that, indeed, human eosinophils represent potential new direct targets to NPs, ZnO in the present case. Copyright © 2016 Elsevier Ireland Ltd. All rights reserved.

  17. Atomic absorption photometry of excess Zn in ZnO

    Energy Technology Data Exchange (ETDEWEB)

    Lott, K.; Shinkarenko, S.; Tuern, L. [Department of Materials Science, Tallinn University of Technology, Ehitajate tee 5, 19086 Tallinn (Estonia); Kirsanova, T.; Grebennik, A.; Vishnjakov, A. [Department of Physical Chemistry, D. Mendelejev University of Chemical Technology of Russia, Miusskaya Sq. 9, 125047 Moscow (Russian Federation)

    2005-02-01

    Zn excess in ZnO is built up automatically at high temperatures. Excess Zn in hydrothermally grown ZnO single crystals were investigated by the atomic absorption photometry (AAP) method. To determine the excess zinc in ZnO samples, the AAP of zinc vapour was used in the conditions of solid-vapour equilibrium. Zn AAP allowed to eliminate excess Zn connected differentially in ZnO samples. To fix Zn non-stoichiometry, all the ZnO samples tested were previously heat treated at temperature interval from 850 to 900 C and at fixed Zn vapour pressures from 0.1 to 0.9 of saturated zinc vapour pressure at given treatment temperature. The analysis of temperature dependence of zinc vapour pressure indicated that the impurity metals take active role in the determination of non-stoichiometric zinc. The impurities Mn, Fe, Co, Ni and Cu form oxides which will reduce during annealing in Zn vapor up to metals form. During AAP measurement in optical cuvette, these metals react with ZnO and give additional Zn vapor pressure. (copyright 2005 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  18. Physical model construction for electrical anisotropy of single crystal zinc oxide micro/nanobelt using finite element method

    International Nuclear Information System (INIS)

    Yu, Guangbin; Tang, Chaolong; Song, Jinhui; Lu, Wenqiang

    2014-01-01

    Based on conductivity characterization of single crystal zinc oxide (ZnO) micro/nanobelt (MB/NB), we further investigate the physical mechanism of nonlinear intrinsic resistance-length characteristic using finite element method. By taking the same parameters used in experiment, a model of nonlinear anisotropic resistance change with single crystal MB/NB has been deduced, which matched the experiment characterization well. The nonlinear resistance-length comes from the different electron moving speed in various crystal planes. As the direct outcome, crystallography of the anisotropic semiconducting MB/NB has been identified, which could serve as a simple but effective method to identify crystal growth direction of single crystal semiconducting or conductive nanomaterial

  19. Gate-Tunable Spin Exchange Interactions and Inversion of Magnetoresistance in Single Ferromagnetic ZnO Nanowires.

    Science.gov (United States)

    Modepalli, Vijayakumar; Jin, Mi-Jin; Park, Jungmin; Jo, Junhyeon; Kim, Ji-Hyun; Baik, Jeong Min; Seo, Changwon; Kim, Jeongyong; Yoo, Jung-Woo

    2016-04-26

    Electrical control of ferromagnetism in semiconductor nanostructures offers the promise of nonvolatile functionality in future semiconductor spintronics. Here, we demonstrate a dramatic gate-induced change of ferromagnetism in ZnO nanowire (NW) field-effect transistors (FETs). Ferromagnetism in our ZnO NWs arose from oxygen vacancies, which constitute deep levels hosting unpaired electron spins. The magnetic transition temperature of the studied ZnO NWs was estimated to be well above room temperature. The in situ UV confocal photoluminescence (PL) study confirmed oxygen vacancy mediated ferromagnetism in the studied ZnO NW FET devices. Both the estimated carrier concentration and temperature-dependent conductivity reveal the studied ZnO NWs are at the crossover of the metal-insulator transition. In particular, gate-induced modulation of the carrier concentration in the ZnO NW FET significantly alters carrier-mediated exchange interactions, which causes even inversion of magnetoresistance (MR) from negative to positive values. Upon sweeping the gate bias from -40 to +50 V, the MRs estimated at 2 K and 2 T were changed from -11.3% to +4.1%. Detailed analysis on the gate-dependent MR behavior clearly showed enhanced spin splitting energy with increasing carrier concentration. Gate-voltage-dependent PL spectra of an individual NW device confirmed the localization of oxygen vacancy-induced spins, indicating that gate-tunable indirect exchange coupling between localized magnetic moments played an important role in the remarkable change of the MR.

  20. Photoelectrocatalytic activity of a hydrothermally grown branched Zno nanorod-array electrode for paracetamol degradation.

    Science.gov (United States)

    Lin, Chin Jung; Liao, Shu-Jun; Kao, Li-Cheng; Liou, Sofia Ya Hsuan

    2015-06-30

    Hierarchical branched ZnO nanorod (B-ZnR) arrays as an electrode for efficient photoelectrocatalytic degradation of paracetamol were grown on fluorine-doped tin oxide substrates using a solution route. The morphologic and structural studies show the ZnO trunks are single-crystalline hexagonal wurtzite ZnO with a [0001] growth direction and are densely covered by c-axis-oriented ZnO branches. The obvious enhancement in photocurrent response of the B-ZnR electrode was obtained than that in the ZnO nanoparticle (ZnO NP) electrode. For the photoelectrocatalytic degradation of paracetamol in 20 h, the conversion fraction of the drug increased from 32% over ZnO NP electrode to 62% over B-ZnR arrays with about 3-fold increase in initial reaction rate. The light intensity-dependent photoelectrocatalytic experiment indicated that the superior performance over the B-ZnR electrode was mainly ascribed to the increased specific surface area without significantly sacrificing the charge transport and pollutant diffusion efficiencies. Two aromatic intermediate compounds were observed and eventually converted into harmless carboxylic acids and ammonia. Hierarchical tree-like ZnO arrays can be considered effective alternatives to improve photoelectro degradation rates without the need for expensive additives. Copyright © 2015 Elsevier B.V. All rights reserved.

  1. Highly stable field emission from ZnO nanowire field emitters controlled by an amorphous indium–gallium–zinc-oxide thin film transistor

    Science.gov (United States)

    Li, Xiaojie; Wang, Ying; Zhang, Zhipeng; Ou, Hai; She, Juncong; Deng, Shaozhi; Xu, Ningsheng; Chen, Jun

    2018-04-01

    Lowering the driving voltage and improving the stability of nanowire field emitters are essential for them to be applied in devices. In this study the characteristics of zinc oxide (ZnO) nanowire field emitter arrays (FEAs) controlled by an amorphous indium–gallium–zinc-oxide thin film transistor (a-IGZO TFT) were studied. A low driving voltage along with stabilization of the field emission current were achieved. Modulation of field emission currents up to three orders of magnitude was achieved at a gate voltage of 0–32 V for a constant anode voltage. Additionally, a-IGZO TFT control can dramatically reduce the emission current fluctuation (i.e., from 46.11 to 1.79% at an emission current of ∼3.7 µA). Both the a-IGZO TFT and ZnO nanowire FEAs were prepared on glass substrates in our research, demonstrating the feasibility of realizing large area a-IGZO TFT-controlled ZnO nanowire FEAs.

  2. Epitaxial ZnO gate dielectrics deposited by RF sputter for AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistors

    Science.gov (United States)

    Yoon, Seonno; Lee, Seungmin; Kim, Hyun-Seop; Cha, Ho-Young; Lee, Hi-Deok; Oh, Jungwoo

    2018-01-01

    Radio frequency (RF)-sputtered ZnO gate dielectrics for AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistors (MOS-HEMTs) were investigated with varying O2/Ar ratios. The ZnO deposited with a low oxygen content of 4.5% showed a high dielectric constant and low interface trap density due to the compensation of oxygen vacancies during the sputtering process. The good capacitance-voltage characteristics of ZnO-on-AlGaN/GaN capacitors resulted from the high crystallinity of oxide at the interface, as investigated by x-ray diffraction and high-resolution transmission electron microscopy. The MOS-HEMTs demonstrated comparable output electrical characteristics with conventional Ni/Au HEMTs but a lower gate leakage current. At a gate voltage of -20 V, the typical gate leakage current for a MOS-HEMT with a gate length of 6 μm and width of 100 μm was found to be as low as 8.2 × 10-7 mA mm-1, which was three orders lower than that of the Ni/Au Schottky gate HEMT. The reduction of the gate leakage current improved the on/off current ratio by three orders of magnitude. These results indicate that RF-sputtered ZnO with a low O2/Ar ratio is a good gate dielectric for high-performance AlGaN/GaN MOS-HEMTs.

  3. Structural, optical and magnetic characterization of Ru doped ZnO nanorods

    International Nuclear Information System (INIS)

    Kumar, Sanjeev; Kaur, Palvinder; Chen, C.L.; Thangavel, R.; Dong, C.L.; Ho, Y.K.; Lee, J.F.; Chan, T.S.; Chen, T.K.; Mok, B.H.; Rao, S.M.; Wu, M.K.

    2014-01-01

    Graphical abstract: Ruthenium (Ru = 0%, 1% and 2%) doped nano-crystalline zinc oxide (ZnO) nanorods were synthesized by using well-known sol–gel technique. X-ray diffraction (XRD) results show that Ru (0%, 1% and 2%) doped ZnO nanorods crystallized in the wurtzite structure having space group C 3v (P6 3 mc). Williamson and Hall plot reveal that in the nanoscale dimensions, incorporation of Ru induced the tensile strain in ZnO host matrix. Photoluminescence (PL) and Raman studies of Ru doped ZnO nanorods show the formation of singly ionized oxygen vacancies which may account for the observed room temperature ferromagnetism (RTFM) in 2% Ru doped ZnO. X-ray absorption spectroscopy (XAS) reveals that Ru replace the Zn atoms in the host lattice and maintain the crystal symmetry with slightly lattice distortion. Highlights: • Ru doped ZnO nanorods crystallized in the wurtzite structure having space group C 3v (P6 3 mc). • PL and Raman studies show the formation of singly ionized oxygen vacancies in 2% Ru doped ZnO. • XAS reveals that Ru replace the Zn atoms in the host lattice with slightly lattice distortion. • Doping of Ru in ZnO nanostructures gives rise to RTFM ordering. -- Abstract: Ruthenium (Ru = 0%, 1% and 2%) doped nano-crystalline zinc oxide (ZnO) nanorods were synthesized by using well-known sol–gel technique. X-ray diffraction (XRD) results show that Ru (0%, 1% and 2%) doped ZnO nanorods crystallized in the wurtzite structure having space group C 3v (P6 3 mc). Williamson and Hall plot reveal that in the nanoscale dimensions, incorporation of Ru induced the tensile strain in ZnO host matrix. Photoluminescence (PL) and Raman studies of Ru doped ZnO nanorods show the formation of singly ionized oxygen vacancies which may account for the observed room temperature ferromagnetism (RTFM) in 2% Ru doped ZnO. X-ray absorption spectroscopy (XAS) reveals that Ru replace the Zn atoms in the host lattice and maintain the crystal symmetry with slightly lattice

  4. Single Molecule Scanning of DNA Radiation Oxidative Damage, Phase I

    Data.gov (United States)

    National Aeronautics and Space Administration — This proposal will develop an assay to map genomic DNA, at the single molecule level and in a nanodevice, for oxidative DNA damage arising from radiation exposure;...

  5. Photocatalytic and electrochemical performance of three-Dimensional reduced graphene Oxide/WS{sub 2}/Mg-doped ZnO composites

    Energy Technology Data Exchange (ETDEWEB)

    Yu, Weiwei [College of Materials Science and Engineering, Changsha University of Science and Technology, Changsha, 410114 (China); Chen, Xi’an [Zhejiang Key Laboratory of Carbon Materials, College of Chemistry and Materials Engineering, Wenzhou University, Wenzhou, 325027 (China); Mei, Wei [College of Materials Science and Engineering, Changsha University of Science and Technology, Changsha, 410114 (China); Chen, Chuansheng, E-mail: 1666423158@qq.com [College of Materials Science and Engineering, Changsha University of Science and Technology, Changsha, 410114 (China); Tsang, Yuenhong [Department of Applied Physics, The Hong Kong Polytechnic University, Hong Kong, 999077 (China)

    2017-04-01

    Highlights: • 3D graphene oxide/WS{sub 2}/Mg-doped ZnO composites were prepared by electrostatic self-assembly and coprecipitation methods. • A significant photocatalytic activity enhancement of rGWMZ was observed. • The enhancement for photocatalytic activity is ascribed to the synergistic effect of rGO and WS{sub 2} nanosheets. - Abstract: To improve the dispersion of reduced graphene oxide and enhance the photocatalytic property of reduced graphene oxide/Mg-doped ZnO composites (rGMZ), the reduced graphene oxide/WS{sub 2}/Mg-doped ZnO composites (rGWMZ) were prepared by electrostatic self-assembly and coprecipitation methods. The effects of mass ratio of WS{sub 2} nanosheets to reduced graphene oxide (WS{sub 2}/rGO wt.%) and calcination temperature on the photocatalytic and electrochemical property of rGWMZ composites were investigated. Experimental results showed that the photocatalytic efficiency of rGWMZ composites is three-fold compared with that of rGMZ composites when the WS{sub 2}/rGO wt.% is 20.8% and calcination temperature is 500 °C, in which the degradation ratio Rhodamin B (RhB) can reach 95% within 15 min under the UV light and 90% within 90 min under simulated solar light. In addition, the rGWMZ show larger capacitance and smaller resistance than rGMZ. The enhancement for photocatalytic activity and electrochemical performance of rGWMZ is ascribed to improving the specific surface area, electrical conductivity and electronic storage capability because of the synergistic effect of rGO and WS{sub 2} nanosheets.

  6. Performance of Dye-Sensitized Solar Cells (DSSCs) Fabricated with Zinc Oxide (ZnO) Nanpowders and Nanorods

    Science.gov (United States)

    Chatterjee, Suman

    2018-03-01

    Due to their high efficiencies, along with lower production costs, many researchers are working on dye-sensitized solar cells (DSSCs) over last few decades as a substitute technology for nonconventional energy. Nanostructured ZnO has got many interesting properties such as wide band gap, large exciton binding energy, good exciton stability, and high breakdown strength, which are applicable as DSSC electrodes. This present work compares the device properties of DSSC fabricated using ZnO nanorods on a ZnO film and ZnO nanopowders. Different types of ZnO photoanode and dye combinations are used to study the stability and photovoltaic properties of the DSSC cell. The photovoltaic properties of the ZnO-based DSSC samples were systematically investigated. The photovoltaic properties of fabricated cell obtained are discussed in the light of band structure and density of states of different types of ZnO nanolayers. The ZnO nanorods fabricated through the sol-gel route have more uniform thickness resulting in enhanced photovoltaic properties of the fabricated device.

  7. Synthesis of ZnO nanowire arrays on ZnO−TiO{sub 2} mixed oxide seed layer for dye sensitized solar cell applications

    Energy Technology Data Exchange (ETDEWEB)

    Marimuthu, T. [Advanced Materials and Thin Film Physics Lab, Department of Physics, Alagappa University, Karaikudi (India); Anandhan, N., E-mail: anandhan_kn@rediffmail.com [Advanced Materials and Thin Film Physics Lab, Department of Physics, Alagappa University, Karaikudi (India); Thangamuthu, R. [Electrochemical Materials Science Division, CSIR-Central Electrochemical Research Institute, Karaikudi (India); Mummoorthi, M. [Advanced Materials and Thin Film Physics Lab, Department of Physics, Alagappa University, Karaikudi (India); Ravi, G. [Photonic Crystal Lab, Department of Physics, Alagappa University, Karaikudi (India)

    2016-08-25

    ZnO nanowire arrays (NWAs) were synthesized on ZnO−TiO{sub 2} mixed oxide seeded FTO conducting glass plate by two-step sol-gel and hydrothermal method, respectively. X-ray diffraction patterns reveal the presence of mixed and hexagonal phases in seed layer and NWAs, respectively. Scanning electron microscope images showed that the FTO glass plate is uniformly covered with grains and a few nanorods in seed layer and dense NWAs are vertically grown on the seed layer. The hexagonal structure and high crystal quality have been confirmed by micro Raman spectra. Photoluminescence spectra also present that NWAs have high crystal quality and less atomic defects. UV spectra indicate that NWAs are absorbed more dye molecules and it has the band gap equal to bulk material. The efficiency of ZnO−TiO{sub 2} mixed oxide seed layer and ZnO NWAs is found to be 0.56 and 0.84% respectively. Electrochemical impedance spectra reveal that NWAs DSSC has high charge transfer recombination resistance than the seed layer DSSC. - Highlights: • ZnO nanowire arrays were synthesized by two-step sol-gel and hydrothermal method. • The crystal structure and crystalline quality of films are confirmed by Raman spectra. • The emission properties of films are investigated by photoluminescence spectra. • ZnO nanowire arrays (NWAs) have higher charge transfer recombination resistance. • The conversion efficiency of the seed layer and NWAs is to be 0.56 and 0.84%.

  8. A comparative study of ultraviolet photoconductivity relaxation in zinc oxide (ZnO) thin films deposited by different techniques

    International Nuclear Information System (INIS)

    Yadav, Harish Kumar; Gupta, Vinay

    2012-01-01

    Photoresponse characteristics of ZnO thin films deposited by three different techniques namely rf diode sputtering, rf magnetron sputtering, and electrophoretic deposition has been investigated in the metal-semiconductor-metal (MSM) configuration. A significant variation in the crystallinity, surface morphology, and photoresponse characteristics of ZnO thin film with change in growth kinetics suggest that the presence of defect centers and their density govern the photodetector relaxation properties. A relatively low density of traps compared to the true quantum yield is found very crucial for the realization of practical ZnO thin film based ultraviolet (UV) photodetector.

  9. A comparative study of ultraviolet photoconductivity relaxation in zinc oxide (ZnO) thin films deposited by different techniques

    Energy Technology Data Exchange (ETDEWEB)

    Yadav, Harish Kumar; Gupta, Vinay [Department of Physics and Astrophysics, University of Delhi, Delhi 110 007 (India)

    2012-05-15

    Photoresponse characteristics of ZnO thin films deposited by three different techniques namely rf diode sputtering, rf magnetron sputtering, and electrophoretic deposition has been investigated in the metal-semiconductor-metal (MSM) configuration. A significant variation in the crystallinity, surface morphology, and photoresponse characteristics of ZnO thin film with change in growth kinetics suggest that the presence of defect centers and their density govern the photodetector relaxation properties. A relatively low density of traps compared to the true quantum yield is found very crucial for the realization of practical ZnO thin film based ultraviolet (UV) photodetector.

  10. Piezoelectric and semiconducting coupled power generating process of a single ZnO belt/wire. A technology for harvesting electricity from the environment.

    Science.gov (United States)

    Song, Jinhui; Zhou, Jun; Wang, Zhong Lin

    2006-08-01

    This paper presents the experimental observation of piezoelectric generation from a single ZnO wire/belt for illustrating a fundamental process of converting mechanical energy into electricity at nanoscale. By deflecting a wire/belt using a conductive atomic force microscope tip in contact mode, the energy is first created by the deflection force and stored by piezoelectric potential, and later converts into piezoelectric energy. The mechanism of the generator is a result of coupled semiconducting and piezoelectric properties of ZnO. A piezoelectric effect is required to create electric potential of ionic charges from elastic deformation; semiconducting property is necessary to separate and maintain the charges and then release the potential via the rectifying behavior of the Schottky barrier at the metal-ZnO interface, which serves as a switch in the entire process. The good conductivity of ZnO is rather unique because it makes the current flow possible. This paper demonstrates a principle for harvesting energy from the environment. The technology has the potential of converting mechanical movement energy (such as body movement, muscle stretching, blood pressure), vibration energy (such as acoustic/ultrasonic wave), and hydraulic energy (such as flow of body fluid, blood flow, contraction of blood vessels) into electric energy that may be sufficient for self-powering nanodevices and nanosystems in applications such as in situ, real-time, and implantable biosensing, biomedical monitoring, and biodetection.

  11. doped ZnO thick film resistors

    Indian Academy of Sciences (India)

    The characterization and ethanol gas sensing properties of pure and doped ZnO thick films were investigated. Thick films of pure zinc oxide were prepared by the screen printing technique. Pure zinc oxide was almost insensitive to ethanol. Thick films of Al2O3 (1 wt%) doped ZnO were observed to be highly sensitive to ...

  12. Antibacterial activity against Escherichia coli and characterization of ZnO and ZnO–Al2O3 mixed oxide nanoparticles

    Directory of Open Access Journals (Sweden)

    Ertan Şahin

    2017-02-01

    Full Text Available In order to achieve better antibacterial water insoluble nanoparticles (Nanoparticles of ZnO and ZnO–Al2O3 were studied. ZnO–Al2O3 mixed oxide nanoparticles were produced from a solution containing Zn(AC2⋅2H2O and AlCl3 by Solvothermal method. The calcination process of the ZnO–Al2O3 composite nanoparticles brought forth polycrystalline one phase ZnO–Al2O3 nanoparticles of 30–50 nm in diameters. ZnO and ZnO–Al2O3 were crystallized into würtzite and rock salt structures, respectively. The structural properties of this sample were analyzed by XRD and compared with bulk case of these samples. Antibacterial effectiveness of the ZnO and ZnO–Al2O3 nanoparticles were tested against general Escherichia coli (E. coli ATCC 25922 and E. coli O157:H7 by measuring the growth through optical density and digital counting of live–dead cells. Minimum inhibitory concentration values against four representative bacteria along with E. coli O157:H7 were also obtained.

  13. Self-limiting growth of ZnO films on (0 0 0 1) sapphire substrates by atomic layer deposition at low temperatures using diethyl-zinc and nitrous oxide

    International Nuclear Information System (INIS)

    Lin, Yen-Ting; Chung, Ping-Han; Lai, Hung-Wei; Su, Hsin-Lun; Lyu, Dong-Yuan; Yen, Kuo-Yi; Lin, Tai-Yuan; Kung, Chung-Yuan; Gong, Jyh-Rong

    2009-01-01

    Atomic layer deposition (ALD) of zinc oxide (ZnO) films on (0 0 0 1) sapphire substrates was conducted at low temperatures by using diethyl-zinc (DEZn) and nitrous oxide (N 2 O) as precursors. It was found that a monolayer-by-monolayer growth regime occurred at 300 deg. C in a range of DEZn flow rates from 5.7 to 8.7 μmol/min. Furthermore, the temperature self-limiting process window for the ALD-grown ZnO films was also observed ranging from 290 to 310 deg. C. A deposition mechanism is proposed to explain how saturated growth of ZnO is achieved by using DEZn and N 2 O. Transmission spectroscopic studies of the ZnO films prepared in the self-limiting regime show that the transmittances of ZnO films are as high as 80% in visible and near infrared spectra. Experimental results indicate that ZnO films with high optical quality can be achieved by ALD at low temperatures using DEZn and N 2 O precursors.

  14. CuO and ZnO nanoparticles: phytotoxicity, metal speciation, and induction of oxidative stress in sand-grown wheat

    Energy Technology Data Exchange (ETDEWEB)

    Dimkpa, Christian O., E-mail: cdimkpa@usu.edu [Utah State University, Department of Biological Engineering (United States); McLean, Joan E. [Utah State University, Utah Water Research Laboratory (United States); Latta, Drew E. [Argonne National Laboratory, Biosciences Division (United States); Manangon, Eliana [University of Utah, Department of Geology and Geophysics (United States); Britt, David W. [Utah State University, Department of Biological Engineering (United States); Johnson, William P. [University of Utah, Department of Geology and Geophysics (United States); Boyanov, Maxim I. [Argonne National Laboratory, Biosciences Division (United States); Anderson, Anne J. [Utah State University, Department of Biological Engineering (United States)

    2012-09-15

    Metal oxide nanoparticles (NPs) are reported to impact plant growth in hydroponic systems. This study describes the impact of commercial CuO (<50 nm) and ZnO (<100 nm) NPs on wheat (Triticum aestivum) grown in a solid matrix, sand. The NPs contained both metallic and non-metallic impurities to different extents. Dynamic light scattering and atomic force microscopy (AFM) assessments confirmed aggregation of the NPs to submicron sizes. AFM showed transformation of ZnO NPs from initial rhomboid shapes in water to elongated rods in the aqueous phase of the sand matrix. Solubilization of metals occurred in the sand at similar rates from CuO or ZnO NPs as their bulk equivalents. Amendment of the sand with 500 mg Cu and Zn/kg sand from the NPs significantly (p = 0.05) reduced root growth, but only CuO NPs impaired shoot growth; growth reductions were less with the bulk amendments. Dissolved Cu from CuO NPs contributed to their phytotoxicity but Zn release did not account for the changes in plant growth. Bioaccumulation of Cu, mainly as CuO and Cu(I)-sulfur complexes, and Zn as Zn-phosphate was detected in the shoots of NP-challenged plants. Total Cu and Zn levels in shoot were similar whether NP or bulk materials were used. Oxidative stress in the NP-treated plants was evidenced by increased lipid peroxidation and oxidized glutathione in roots and decreased chlorophyll content in shoots; higher peroxidase and catalase activities were present in roots. These findings correlate with the NPs causing increased production of reactive oxygen species. The accumulation of Cu and Zn from NPs into edible plants has relevance to the food chain.

  15. High-performance zno transistors processed via an aqueous carbon-free metal oxide precursor route at temperatures between 80-180 °c

    KAUST Repository

    Lin, Yenhung

    2013-06-25

    An aqueous and carbon-free metal-oxide precursor route is used in combination with a UV irradiation-assisted low-temperature conversion method to fabricate low-voltage ZnO transistors with electron mobilities exceeding 10 cm2/Vs at temperatures <180°C. Because of its low temperature requirements the method allows processing of high-performance transistors onto temperature sensitive substrates such as plastic. Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  16. Coherent acoustic phonon oscillation accompanied with backward acoustic pulse below exciton resonance in a ZnO epifilm on oxide-buffered Si(1 1 1)

    International Nuclear Information System (INIS)

    Lin, Ja-Hon; Shen, Yu-Kai; Lu, Chia-Hui; Chen, Yao-Hui; Chang, Chun-peng; Liu, Wei-Rein; Hsu, Chia-Hung; Lee, Wei-Chin; Hong, Minghwei; Kwo, Jueinai-Raynien; Hsieh, Wen-Feng

    2016-01-01

    Unlike coherent acoustic phonons (CAPs) generated from heat induced thermal stress by the coated Au film, we demonstrated the oscillation from c-ZnO epitaxial film on oxide buffered Si through a degenerate pump–probe technique. As the excited photon energy was set below the exciton resonance, the electronic stress that resulted from defect resonance was used to induce acoustic wave. The damped oscillation revealed a superposition of a high frequency and long decay CAP signal with a backward propagating acoustic pulse which was generated by the absorption of the penetrated pump beam at the Si surface and selected by the ZnO layer as the acoustic resonator. (paper)

  17. Identification of vacancy defect complexes in transparent semiconducting oxides ZnO, In2O3 and SnO2

    International Nuclear Information System (INIS)

    Makkonen, Ilja; Korhonen, Esa; Prozheeva, Vera; Tuomisto, Filip

    2016-01-01

    Positron annihilation spectroscopy, when combined with supporting high-quality modeling of positron states and annihilation in matter, is a powerful tool for detailed defect identification of vacancy-type defects in semiconductors and oxides. Here we demonstrate that the Doppler broadening of the positron annihilation radiation is a very sensitive means for observing the oxygen environment around cation vacancies, the main open-volume defects trapping positrons in measurements made for transparent semiconducting oxides. Changes in the positron annihilation signal due to external manipulation such as irradiation and annealing can be correlated with the associated changes in the sizes of the detected vacancy clusters. Our examples for ZnO, In 2 O 3 and SnO 2 demonstrate that oxygen vacancies in oxides can be detected directly using positron annihilation spectroscopy when they are complexed with cation vacancies. (paper)

  18. Identification of vacancy defect complexes in transparent semiconducting oxides ZnO, In2O3 and SnO2

    Science.gov (United States)

    Makkonen, Ilja; Korhonen, Esa; Prozheeva, Vera; Tuomisto, Filip

    2016-06-01

    Positron annihilation spectroscopy, when combined with supporting high-quality modeling of positron states and annihilation in matter, is a powerful tool for detailed defect identification of vacancy-type defects in semiconductors and oxides. Here we demonstrate that the Doppler broadening of the positron annihilation radiation is a very sensitive means for observing the oxygen environment around cation vacancies, the main open-volume defects trapping positrons in measurements made for transparent semiconducting oxides. Changes in the positron annihilation signal due to external manipulation such as irradiation and annealing can be correlated with the associated changes in the sizes of the detected vacancy clusters. Our examples for ZnO, In2O3 and SnO2 demonstrate that oxygen vacancies in oxides can be detected directly using positron annihilation spectroscopy when they are complexed with cation vacancies.

  19. Platinum single crystal electrodes for the electrocatalysis of methane oxidation

    Directory of Open Access Journals (Sweden)

    Mayara Munaretto

    2011-03-01

    Full Text Available The main objective of this paper is to characterize the voltammetric profiles of platinum single crystals of low Miller indexes Pt(100 and Pt(110 and study their catalytic activities on the oxidation of methane. In this way, it was developed a metallic surface modified by presence of other metal oxide, which presents catalytic activity for this reaction. It is well known that the electrooxidation of methane (CH4 leads mainly to the formation of CO2 and H2O, however, the oxidation can also lead to the formation of CO, a reaction intermediate that has strong interaction with metal surfaces, such as platinum. This molecule tends to accumulate on the platinum surface and to passive it, due to the self-poisoning, decreasing its catalytic activity. Therefore, the main aim of this work was the development of a platinum electrode modified by deposition of titanium oxide, which presented electrocatalytic properties for the oxidation of methane.

  20. Solution precursor plasma deposition of nanostructured ZnO coatings

    International Nuclear Information System (INIS)

    Tummala, Raghavender; Guduru, Ramesh K.; Mohanty, Pravansu S.

    2011-01-01

    Highlights: → The solution precursor route employed is an inexpensive process with capability to produce large scale coatings at fast rates on mass scale production. → It is highly capable of developing tailorable nanostructures. → This technique can be employed to spray the coatings on any kind of substrates including polymers. → The ZnO coatings developed via solution precursor plasma spray process have good electrical conductivity and reflectivity properties in spite of possessing large amount of particulate boundaries, porosity and nanostructured grains. -- Abstract: Zinc oxide (ZnO) is a wide band gap semiconducting material that has various applications including optical, electronic, biomedical and corrosion protection. It is usually synthesized via processing routes, such as vapor deposition techniques, sol-gel, spray pyrolysis and thermal spray of pre-synthesized ZnO powders. Cheaper and faster synthesis techniques are of technological importance due to increased demand in alternative energy applications. Here, we report synthesis of nanostructured ZnO coatings directly from a solution precursor in a single step using plasma spray technique. Nanostructured ZnO coatings were deposited from the solution precursor prepared using zinc acetate and water/isopropanol. An axial liquid atomizer was employed in a DC plasma spray torch to create fine droplets of precursor for faster thermal treatment in the plasma plume to form ZnO. Microstructures of coatings revealed ultrafine particulate agglomerates. X-ray diffraction confirmed polycrystalline nature and hexagonal Wurtzite crystal structure of the coatings. Transmission electron microscopy studies showed fine grains in the range of 10-40 nm. Observed optical transmittance (∼65-80%) and reflectivity (∼65-70%) in the visible spectrum, and electrical resistivity (48.5-50.1 mΩ cm) of ZnO coatings are attributed to ultrafine particulate morphology of the coatings.

  1. Solution precursor plasma deposition of nanostructured ZnO coatings

    Energy Technology Data Exchange (ETDEWEB)

    Tummala, Raghavender [Department of Mechanical Engineering, University of Michigan - Dearborn, MI 48128 (United States); Guduru, Ramesh K., E-mail: rkguduru@umich.edu [Department of Mechanical Engineering, University of Michigan - Dearborn, MI 48128 (United States); Mohanty, Pravansu S. [Department of Mechanical Engineering, University of Michigan - Dearborn, MI 48128 (United States)

    2011-08-15

    Highlights: {yields} The solution precursor route employed is an inexpensive process with capability to produce large scale coatings at fast rates on mass scale production. {yields} It is highly capable of developing tailorable nanostructures. {yields} This technique can be employed to spray the coatings on any kind of substrates including polymers. {yields} The ZnO coatings developed via solution precursor plasma spray process have good electrical conductivity and reflectivity properties in spite of possessing large amount of particulate boundaries, porosity and nanostructured grains. -- Abstract: Zinc oxide (ZnO) is a wide band gap semiconducting material that has various applications including optical, electronic, biomedical and corrosion protection. It is usually synthesized via processing routes, such as vapor deposition techniques, sol-gel, spray pyrolysis and thermal spray of pre-synthesized ZnO powders. Cheaper and faster synthesis techniques are of technological importance due to increased demand in alternative energy applications. Here, we report synthesis of nanostructured ZnO coatings directly from a solution precursor in a single step using plasma spray technique. Nanostructured ZnO coatings were deposited from the solution precursor prepared using zinc acetate and water/isopropanol. An axial liquid atomizer was employed in a DC plasma spray torch to create fine droplets of precursor for faster thermal treatment in the plasma plume to form ZnO. Microstructures of coatings revealed ultrafine particulate agglomerates. X-ray diffraction confirmed polycrystalline nature and hexagonal Wurtzite crystal structure of the coatings. Transmission electron microscopy studies showed fine grains in the range of 10-40 nm. Observed optical transmittance ({approx}65-80%) and reflectivity ({approx}65-70%) in the visible spectrum, and electrical resistivity (48.5-50.1 m{Omega} cm) of ZnO coatings are attributed to ultrafine particulate morphology of the coatings.

  2. Comparison of modification strategies towards enhanced charge carrier separation and photocatalytic degradation activity of metal oxide semiconductors (TiO2, WO3 and ZnO)

    Science.gov (United States)

    Kumar, S. Girish; Rao, K. S. R. Koteswara

    2017-01-01

    Metal oxide semiconductors (TiO2, WO3 and ZnO) finds unparalleled opportunity in wastewater purification under UV/visible light, largely encouraged by their divergent admirable features like stability, non-toxicity, ease of preparation, suitable band edge positions and facile generation of active oxygen species in the aqueous medium. However, the perennial failings of these photocatalysts emanates from the stumbling blocks like rapid charge carrier recombination and meager visible light response. In this review, tailoring the surface-bulk electronic structure through the calibrated and veritable approaches such as impurity doping, deposition with noble metals, sensitizing with other compounds (dyes, polymers, inorganic complexes and simple chelating ligands), hydrogenation process (annealing under hydrogen atmosphere), electronic integration with other semiconductors, modifying with carbon nanostructures, designing with exposed facets and tailoring with hierarchical morphologies to overcome their critical drawbacks are summarized. Taking into account the materials intrinsic properties, the pros and cons together with similarities and striking differences for each strategy in specific to TiO2, WO3 & ZnO are highlighted. These subtlety enunciates the primacy for improving the structure-electronic properties of metal oxides and credence to its fore in the practical applications. Future research must focus on comparing the performances of ZnO, TiO2 and WO3 in parallel to get insight into their photocatalytic behaviors. Such comparisons not only reveal the changed surface-electronic structure upon various modifications, but also shed light on charge carrier dynamics, free radical generation, structural stability and compatibility for photocatalytic reactions. It is envisioned that these cardinal tactics have profound implications and can be replicated to other semiconductor photocatalysts like CeO2, In2O3, Bi2O3, Fe2O3, BiVO4, AgX, BiOX (X = Cl, Br & I), Bi2WO6, Bi2MoO6

  3. Effect of ZnO on phase emergence, microstructure and surface modifications of calcium phosphosilicate glass/glass-ceramics having iron oxide

    Energy Technology Data Exchange (ETDEWEB)

    Sharma, K.; Dixit, A.; Bhattacharya, S.; Jagannath [Technical Physics and Prototype Engineering Division, Bhabha Atomic Research Centre, Mumbai 400 085 (India); Deo, M.N. [High Pressure Physics Division, Bhabha Atomic Research Centre, Mumbai 400 085 (India); Kothiyal, G.P., E-mail: gpkoth@barc.gov.in [Technical Physics and Prototype Engineering Division, Bhabha Atomic Research Centre, Mumbai 400 085 (India)

    2010-03-01

    The effect of ZnO on phase emergence and microstructure properties of glass and glass-ceramics with composition 25SiO{sub 2}-50CaO-15P{sub 2}O{sub 5}-(10 - x)Fe{sub 2}O{sub 3}-xZnO (where x = 0, 2, 5, 7 mol%) has been studied. They have been characterized using X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), and scanning electron microscopy (SEM). Surface modifications of these glass-ceramics in simulated body fluid have been studied using Fourier transform infrared reflection spectroscopy (FTIR), XPS and SEM. Results have shown a decrease in the fraction of non-bridging oxygen with increase in zinc oxide content. Emergence of crystalline phases in glass-ceramics at different heat treatment temperatures was studied using XRD. When glass is heat treated at 800 deg. C calcium phosphate, hematite and magnetite are developed as major phases in the glass-ceramics samples with ZnO up to 5 mol%. In addition to these, calcium silicate (Ca{sub 3}Si{sub 2}O{sub 7}) phase is also observed when glass is heat treated at 1000 deg. C. The microstructure of the glass-ceramics heat treated at 800 deg. C exhibits the formation of nano-size (40-50 nm) grains. On heat treatment at 1000 deg. C crystallites grow to above 50 nm size and more than one phase are observed in the microstructure. The formation of thin flake-like structure with coarse particles is observed at high zinc oxide concentration (x = 7 mol%). In vitro studies have shown the surface modifications and formation of Ca-P-rich layer on the glass-ceramics when immersed in simulated body fluids (SBF) for different durations. The bioactive response was found to depend on ZnO content.

  4. Effect of ZnO on phase emergence, microstructure and surface modifications of calcium phosphosilicate glass/glass-ceramics having iron oxide

    International Nuclear Information System (INIS)

    Sharma, K.; Dixit, A.; Bhattacharya, S.; Jagannath; Deo, M.N.; Kothiyal, G.P.

    2010-01-01

    The effect of ZnO on phase emergence and microstructure properties of glass and glass-ceramics with composition 25SiO 2 -50CaO-15P 2 O 5 -(10 - x)Fe 2 O 3 -xZnO (where x = 0, 2, 5, 7 mol%) has been studied. They have been characterized using X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), and scanning electron microscopy (SEM). Surface modifications of these glass-ceramics in simulated body fluid have been studied using Fourier transform infrared reflection spectroscopy (FTIR), XPS and SEM. Results have shown a decrease in the fraction of non-bridging oxygen with increase in zinc oxide content. Emergence of crystalline phases in glass-ceramics at different heat treatment temperatures was studied using XRD. When glass is heat treated at 800 deg. C calcium phosphate, hematite and magnetite are developed as major phases in the glass-ceramics samples with ZnO up to 5 mol%. In addition to these, calcium silicate (Ca 3 Si 2 O 7 ) phase is also observed when glass is heat treated at 1000 deg. C. The microstructure of the glass-ceramics heat treated at 800 deg. C exhibits the formation of nano-size (40-50 nm) grains. On heat treatment at 1000 deg. C crystallites grow to above 50 nm size and more than one phase are observed in the microstructure. The formation of thin flake-like structure with coarse particles is observed at high zinc oxide concentration (x = 7 mol%). In vitro studies have shown the surface modifications and formation of Ca-P-rich layer on the glass-ceramics when immersed in simulated body fluids (SBF) for different durations. The bioactive response was found to depend on ZnO content.

  5. Heterojunction oxide thin-film transistors with unprecedented electron mobility grown from solution

    KAUST Repository

    Faber, Hendrik; Das, Satyajit; Lin, Yen-Hung; Pliatsikas, Nikos; Zhao, Kui; Kehagias, Thomas; Dimitrakopulos, George; Amassian, Aram; Patsalas, Panos A.; Anthopoulos, Thomas D.

    2017-01-01

    with the extrinsic electron transport properties of the often defect-prone oxides. We overcome this limitation by replacing the single-layer semiconductor channel with a low-dimensional, solution-grown In2O3/ZnO heterojunction. We find that In2O3/ZnO transistors

  6. Defect free C-axis oriented zinc oxide (ZnO) films grown at room temperature using RF magnetron sputtering

    International Nuclear Information System (INIS)

    Kunj, Saurabh; Sreenivas, K.

    2016-01-01

    Radio frequency Magnetron sputtering technique was employed to fabricate ZnO thin films on quartz substrate at room temperature. The effect of varying oxygen to argon (O_2/Ar) gas ratio on the structural and photoluminescence properties of the film is analyzed.X-ray diffraction (XRD) spectra reveals the formation of hexagonal wurtzite structured ZnO thin films with preferred orientation along (002) plane. Photoluminescence (PL) characterization reveals the preparation of highly crystalline films exhibiting intense Ultraviolet (UV) emission with negligible amount of defects as indicated by the absence of Deep Level Emission (DLE) in the PL spectra.

  7. Defect free C-axis oriented zinc oxide (ZnO) films grown at room temperature using RF magnetron sputtering

    Science.gov (United States)

    Kunj, Saurabh; Sreenivas, K.

    2016-05-01

    Radio frequency Magnetron sputtering technique was employed to fabricate ZnO thin films on quartz substrate at room temperature. The effect of varying oxygen to argon (O2/Ar) gas ratio on the structural and photoluminescence properties of the film is analyzed.X-ray diffraction (XRD) spectra reveals the formation of hexagonal wurtzite structured ZnO thin films with preferred orientation along (002) plane. Photoluminescence (PL) characterization reveals the preparation of highly crystalline films exhibiting intense Ultraviolet (UV) emission with negligible amount of defects as indicated by the absence of Deep Level Emission (DLE) in the PL spectra.

  8. Defect free C-axis oriented zinc oxide (ZnO) films grown at room temperature using RF magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Kunj, Saurabh, E-mail: saurabhkunj22@gmail.com; Sreenivas, K. [Department of Physics & Astrophysics, University of Delhi, Delhi-110007 (India)

    2016-05-23

    Radio frequency Magnetron sputtering technique was employed to fabricate ZnO thin films on quartz substrate at room temperature. The effect of varying oxygen to argon (O{sub 2}/Ar) gas ratio on the structural and photoluminescence properties of the film is analyzed.X-ray diffraction (XRD) spectra reveals the formation of hexagonal wurtzite structured ZnO thin films with preferred orientation along (002) plane. Photoluminescence (PL) characterization reveals the preparation of highly crystalline films exhibiting intense Ultraviolet (UV) emission with negligible amount of defects as indicated by the absence of Deep Level Emission (DLE) in the PL spectra.

  9. CBE growth of high-quality ZnO epitaxial layers

    Energy Technology Data Exchange (ETDEWEB)

    El-Shaer, A.; Bakin, A.; Mofor, A.C.; Kreye, M.; Waag, A. [Institute of Semiconductor Technology, Technical University Braunschweig, Hans-Sommer-Strasse 66, 38106 Braunschweig (Germany); Blaesing, J.; Krost, A. [Institute of Experimental Physics, Otto-von-Guericke-University Magdeburg (Germany); Stoimenos, J. [Physics Department, Aristotele University, Univ. Campus, 54006 Thessaloniki (Greece); Pecz, B. [Research Institute for Technical Physics and Materials Science, Hungarian Academy of Sciences, P.O. Box 49, 1525 Budapest (Hungary); Heuken, M. [Aixtron AG, Kackertstr. 15-17, 52072 Aachen (Germany)

    2006-03-15

    Further improvements on the recently reported novel approach to zinc oxide Chemical Beam Epitaxy (CBE) are presented. Hydrogen peroxide is employed as a very efficient novel oxidant. ZnO layers with a thickness from 100 nm to 600 nm were grown on c-sapphire using a MgO buffer. PL-mapping as well as conductivity mapping shows a good uniformity across the 2 inch ZnO-on-sapphire epiwafers. The measured surface roughness for the best layers is as low as 0.26 nm. HRXRD measurements of the obtained ZnO layers show excellent quality of the single crystalline ZnO. The FWHM of the HRXRD (0002) rocking curves measured for the 2 inch ZnO-on-sapphire wafers is as low as 27 arcsec with a very high lateral homogeneity across the whole wafer. Plane view HRTEM observations reveal the very good quality of the ZnO films. The results indicate that CBE is a suitable technique to fabricate ZnO of very high structural quality, which can eventually be used as an alternative to bulk ZnO substrates. (copyright 2006 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  10. Fast response of carbon monoxide gas sensors using a highly porous network of ZnO nanoparticles decorated on 3D reduced graphene oxide

    Science.gov (United States)

    Ha, Nguyen Hai; Thinh, Dao Duc; Huong, Nguyen Thanh; Phuong, Nguyen Huy; Thach, Phan Duy; Hong, Hoang Si

    2018-03-01

    Zinc oxide (ZnO) nanoparticles loaded onto 3D reduced graphene oxide (3D-RGO) for carbon monoxide (CO) sensing were synthesized using hydrothermal method. The highly porous ZnO/3D-RGO configuration was stable without collapsing and was deposited on the micro-heater of the CO gas sensor. The resulting CO gas sensor displayed high sensitivity, fast response/recovery, and good linearity. The sensor achieved a response value of 85.2% for 1000 ppm CO at a working temperature of 200 °C. The response and recovery times of the sensor were 7 and 9 s for 1000 ppm CO at 200 °C. Similarly, the response value, response time, and recovery time of the sensor at room temperature were 27.5%, 14 s, and 15 s, respectively. The sensor demonstrated a distinct response to various CO concentrations in the range of 1-1000 ppm and good selectivity toward CO gas. In addition, the sensor exhibited good repeatability in multi-cycle and long-term stability.

  11. Formation of polar surfaces in microstructured ZnO by doping with Cu and applications in photocatalysis using visible light

    International Nuclear Information System (INIS)

    Pawar, Rajendra C.; Choi, Da-Hyun; Lee, Jai-Sung; Lee, Caroline S.

    2015-01-01

    We report the synthesis of copper-doped zinc oxide microstructures with a large amount of polar surfaces using a single-step facile chemical method by collecting powders of zinc oxide (ZnO) microstructures. It was found that rod-like morphology of ZnO transformed into disk and sphere-like structure with nanosheets. Hollow disk-like structures were formed due to the surface etching properties of Cl − ions in the copper chloride precursor. The photocatalytic degradation of methylene blue (MB) and rhodamine B (RhB) dyes was measured under irradiation with visible light using the structures as catalysts. The Cu-doped ZnO exhibited better photodegradation properties than did undoped ZnO. The enhanced performance is attributed to the existence of (001) polar surfaces, oxygen vacancies, and increased optical absorbance at visible wavelengths, which is consistent with the field emission scanning electron microscopy (FESEM), transmission electron microscopy (TEM), room temperature photoluminescence (PL), and optical absorbance measurements. These favorable photocatalytic properties of the doped microstructures demonstrate their potential for use in wastewater treatment. - Graphical abstract: Graphical abstract shows the electron transfer mechanism under visible light for Cu-doped ZnO microstructures and the photocatalytic degradation of dye. - Highlights: • Cu induced microstructures of ZnO with polar surfaces. • Methylene blue degradation under visible light irradiation. • Room temperature ferromagnetism due to oxygen vacancies in ZnO. • 7% Cu–ZnO has highest photocatalytic activity

  12. Positron annihilation study of defects in electron-irradiated single crystal zinc oxide

    Science.gov (United States)

    To, C. K.; Yang, B.; Beling, C. D.; Fung, S.; Ling, C. C.; Gong, M.

    2011-01-01

    Pressurized melt grown zinc oxide (ZnO) single crystals purchased from Cermet Inc. were irradiated by 2MeV electrons with fluence of 6x1017cm-2. Isochronal annealing from 100°C-800°C was performed on the crystals under argon and air ambience. Variable Energy Doppler Broadening Spectroscopy (VEDBS) was carried out on both the as-grown and the irradiated samples at each annealing step. The migration, agglomeration and annealing of grown-in and irradiated-introduced defects were studied. It was observed that the grown-in vacancy-type defects concentration decreased at 300°C and 600 °C. For the irradiated sample annealed in argon, the positron trapping vacancy-type defect concentration decreased at 300°C and 600°C. Further annealing the as-grown and irradiated samples in argon increased the S parameter further. For the irradiated sample annealed in air, the vacancy-type defect concentration decreases at 300°C and 700°C.

  13. Positron annihilation study of defects in electron-irradiated single crystal zinc oxide

    Energy Technology Data Exchange (ETDEWEB)

    To, C K; Yang, B; Beling, C D; Fung, S; Ling, C C [Department of Physics, University of Hong Kong (Hong Kong); Gong, M, E-mail: sfung@hkucc.hku.h, E-mail: edwardto04@yahoo.com.h [Department of Physics, Sichuan University, Chengdu (China)

    2011-01-01

    Pressurized melt grown zinc oxide (ZnO) single crystals purchased from Cermet Inc. were irradiated by 2 MeV electrons with fluence of 6x10{sup 17}cm{sup -2}. Isochronal annealing from 100 deg. C - 800 deg. C was performed on the crystals under argon and air ambience. Variable Energy Doppler Broadening Spectroscopy (VEDBS) was carried out on both the as-grown and the irradiated samples at each annealing step. The migration, agglomeration and annealing of grown-in and irradiated-introduced defects were studied. It was observed that the grown-in vacancy-type defects concentration decreased at 300 deg. C and 600 deg. C. For the irradiated sample annealed in argon, the positron trapping vacancy-type defect concentration decreased at 300 deg. C and 600 deg. C. Further annealing the as-grown and irradiated samples in argon increased the S parameter further. For the irradiated sample annealed in air, the vacancy-type defect concentration decreases at 300 deg. C and 700 deg. C.

  14. Positron annihilation study of defects in electron-irradiated single crystal zinc oxide

    International Nuclear Information System (INIS)

    To, C K; Yang, B; Beling, C D; Fung, S; Ling, C C; Gong, M

    2011-01-01

    Pressurized melt grown zinc oxide (ZnO) single crystals purchased from Cermet Inc. were irradiated by 2 MeV electrons with fluence of 6x10 17 cm -2 . Isochronal annealing from 100 deg. C - 800 deg. C was performed on the crystals under argon and air ambience. Variable Energy Doppler Broadening Spectroscopy (VEDBS) was carried out on both the as-grown and the irradiated samples at each annealing step. The migration, agglomeration and annealing of grown-in and irradiated-introduced defects were studied. It was observed that the grown-in vacancy-type defects concentration decreased at 300 deg. C and 600 deg. C. For the irradiated sample annealed in argon, the positron trapping vacancy-type defect concentration decreased at 300 deg. C and 600 deg. C. Further annealing the as-grown and irradiated samples in argon increased the S parameter further. For the irradiated sample annealed in air, the vacancy-type defect concentration decreases at 300 deg. C and 700 deg. C.

  15. Hydrogen interstitial in H-ion implanted ZnO bulk single crystals: Evaluation by elastic recoil detection analysis and electron paramagnetic resonance

    Energy Technology Data Exchange (ETDEWEB)

    Kaida, T.; Kamioka, K.; Nishimura, T. [College of Engineering and Research Center of Ion Beam Technology, Hosei University, Koganei, Tokyo 184-8584 (Japan); Kuriyama, K., E-mail: kuri@ionbeam.hosei.ac.jp [College of Engineering and Research Center of Ion Beam Technology, Hosei University, Koganei, Tokyo 184-8584 (Japan); Kushida, K. [Department of Arts and Sciences, Osaka Kyoiku University, Kashiwara, Osaka 582-8582 (Japan); Kinomura, A. [National Institute of Advanced Industrial Science and Technology, Tsukuba, Ibaraki 305-8568 (Japan)

    2015-12-15

    The origins of low resistivity in H ion-implanted ZnO bulk single crystals are evaluated by elastic recoil detection analysis (ERDA), electron paramagnetic resonance (EPR), and Van der Pauw methods. The H-ion implantation (peak concentration: 5.0 × 10{sup 15} cm{sup −2}) into ZnO is performed using a 500 keV implanter. The maximum of the concentration of the implanted H estimated by a TRIM simulation is at 3600 nm in depth. The resistivity decreases from ∼10{sup 3} Ω cm for un implanted ZnO to 6.5 Ω cm for as-implanted, 2.3 × 10{sup −1} Ω cm for 200 °C annealed, and 3.2 × 10{sup −1} Ω cm for 400 °C annealed samples. The ERDA measurements can evaluate the concentration of hydrogens which move to the vicinity of the surface (surface to 300 nm or 100 nm) because of the diffusion by the annealing at 200 °C and 400 °C. The hydrogen concentration near the surface estimated using the 2.0 MeV helium beam is ∼3.8 × 10{sup 13} cm{sup −2} for annealed samples. From EPR measurements, the oxygen vacancy of +charge state (V{sub o}{sup +}) is observed in as-implanted samples. The V{sub o}{sup +} related signal (g = 1.96) observed under no illumination disappears after successive illumination with a red LED and appears again with a blue light illumination. The activation energy of as-implanted, 200 °C annealed, and 400 °C annealed samples estimated from the temperature dependence of carrier concentration lies between 29 meV and 23 meV, suggesting the existence of H interstitial as a shallow donor level.

  16. Ultraviolet photosensors fabricated with Ag nanowires coated with ZnO nanoparticles

    Energy Technology Data Exchange (ETDEWEB)

    Shen, Guan-Hung [Department of Chemical Engineering, National Cheng Kung University, Tainan 70101, Taiwan (China); Hong, Franklin Chau-Nan, E-mail: hong@mail.ncku.edu.tw [Department of Chemical Engineering, National Cheng Kung University, Tainan 70101, Taiwan (China); Advanced Optoelectronic Technology Center, National Cheng Kung University, Tainan 70101, Taiwan (China); Center for Micro/Nano Science and Technology, National Cheng Kung University, Tainan 70101, Taiwan (China); NCKU Research Center for Energy Technology and Strategy, National Cheng Kung University, Tainan 70101, Taiwan (China)

    2014-11-03

    We have developed a simple low temperature process to coat zinc oxide (ZnO) nanoparticles (NPs) on Ag nanowires (NWs) with well-controlled morphology. Triethanolamine (TEA) was employed to react with zinc acetate (Zn(CH{sub 3}COO){sub 2}) forming ZnO NPs. TEA was also found to enhance the nucleation and binding of ZnO NPs on the Ag nanowire surfaces facilitating a complete coverage of Ag nanowire surfaces with ZnO NPs. The effects of the process parameters including reaction time and reaction temperature were studied. The surfaces of 60 nm diameter Ag NWs could be completely covered with ZnO NPs with the final diameters of Ag-NWs@ZnO (core–shell NWs) turning into the range from 100 nm to 450 nm. The Ag-NWs@ZnO was characterized by scanning electron microscopy, transmission electron microscopy, energy-dispersive X-ray mapping analysis, X-ray diffraction, and photoluminescence spectra. Finally, ultraviolet (UV) photosensors were fabricated using Ag-NWs@ZnO. They were found to improve photosensitivity with greatly enhanced fast response by reducing the recovery time by 2 orders, in comparison with the UV-sensors using single-crystalline ZnO NWs. - Highlights: • Solution process to coat ZnO nanoparticles on Ag nanowires has been developed. • Ultraviolet photosensing of ZnO nanoparticles coated on the Ag nanowires was found. • High defect concentration of ZnO nanoparticles enhanced the photosensing properties.

  17. Enhanced photoluminescence and Raman properties of Al-Doped ZnO nanostructures prepared using thermal chemical vapor deposition of methanol assisted with heated brass.

    Directory of Open Access Journals (Sweden)

    Tamil Many K Thandavan

    Full Text Available Vapor phase transport (VPT assisted by mixture of methanol and acetone via thermal evaporation of brass (CuZn was used to prepare un-doped and Al-doped zinc oxide (ZnO nanostructures (NSs. The structure and morphology were characterized by field emission scanning electron microscopy (FESEM and x-ray diffraction (XRD. Photoluminescence (PL properties of un-doped and Al-doped ZnO showed significant changes in the optical properties providing evidence for several types of defects such as zinc interstitials (Zni, oxygen interstitials (Oi, zinc vacancy (Vzn, singly charged zinc vacancy (VZn-, oxygen vacancy (Vo, singly charged oxygen vacancy (Vo+ and oxygen anti-site defects (OZn in the grown NSs. The Al-doped ZnO NSs have exhibited shifted PL peaks at near band edge (NBE and red luminescence compared to the un-doped ZnO. The Raman scattering results provided evidence of Al doping into the ZnO NSs due to peak shift from 145 cm-1 to an anomalous peak at 138 cm-1. Presence of enhanced Raman signal at around 274 and 743 cm-1 further confirmed Al in ZnO NSs. The enhanced D and G band in all Al-doped ZnO NSs shows possible functionalization and doping process in ZnO NSs.

  18. Enhanced photoluminescence and Raman properties of Al-Doped ZnO nanostructures prepared using thermal chemical vapor deposition of methanol assisted with heated brass.

    Science.gov (United States)

    Thandavan, Tamil Many K; Gani, Siti Meriam Abdul; San Wong, Chiow; Md Nor, Roslan

    2015-01-01

    Vapor phase transport (VPT) assisted by mixture of methanol and acetone via thermal evaporation of brass (CuZn) was used to prepare un-doped and Al-doped zinc oxide (ZnO) nanostructures (NSs). The structure and morphology were characterized by field emission scanning electron microscopy (FESEM) and x-ray diffraction (XRD). Photoluminescence (PL) properties of un-doped and Al-doped ZnO showed significant changes in the optical properties providing evidence for several types of defects such as zinc interstitials (Zni), oxygen interstitials (Oi), zinc vacancy (Vzn), singly charged zinc vacancy (VZn-), oxygen vacancy (Vo), singly charged oxygen vacancy (Vo+) and oxygen anti-site defects (OZn) in the grown NSs. The Al-doped ZnO NSs have exhibited shifted PL peaks at near band edge (NBE) and red luminescence compared to the un-doped ZnO. The Raman scattering results provided evidence of Al doping into the ZnO NSs due to peak shift from 145 cm-1 to an anomalous peak at 138 cm-1. Presence of enhanced Raman signal at around 274 and 743 cm-1 further confirmed Al in ZnO NSs. The enhanced D and G band in all Al-doped ZnO NSs shows possible functionalization and doping process in ZnO NSs.

  19. The early stages of oxidation of magnesium single crystal surfaces

    International Nuclear Information System (INIS)

    Hayden, B.E.; Schweizer, E.; Koetz, R.; Bradshaw, A.M.

    1981-01-01

    The early stages of oxidation of Mg(001) and Mg(100) single crystal surfaces at 300 K have been investigated by LEED, ELS, work function and ellipsometric measurements. A sharp decrease in work function on both surfaces during the first 12 L exposure indicates the incorporation of oxygen in the earliest stages of the interaction. The incorporated oxygen on Mg(001) gives rise to a broadening of the integral order LEED spots for an exposure 3 L. (orig.)

  20. A boron and gallium co-doped ZnO intermediate layer for ZnO/Si heterojunction diodes

    Science.gov (United States)

    Lu, Yuanxi; Huang, Jian; Li, Bing; Tang, Ke; Ma, Yuncheng; Cao, Meng; Wang, Lin; Wang, Linjun

    2018-01-01

    ZnO (Zinc oxide)/Si (Silicon) heterojunctions were prepared by depositing n-type ZnO films on p-type single crystal Si substrates using magnetron sputtering. A boron and gallium co-doped ZnO (BGZO) high conductivity intermediate layer was deposited between aurum (Au) electrodes and ZnO films. The influence of the BGZO layer on the properties of Au/ZnO contacts and the performance of ZnO/Si heterojunctions was investigated. The results show an improvement in contact resistance by introducing the BGZO layer. Compared with the ZnO/Si heterojunction, the BGZO/ZnO/Si heterojunction exhibits a larger forward current, a smaller turn-on voltage and higher ratio of ultraviolet (UV) photo current/dark current.

  1. Defect characterization and magnetic properties in un-doped ZnO thin film annealed in a strong magnetic field

    Science.gov (United States)

    Ning, Shuai; Zhan, Peng; Wang, Wei-Peng; Li, Zheng-Cao; Zhang, Zheng-Jun

    2014-12-01

    Highly c-axis oriented un-doped zinc oxide (ZnO) thin films, each with a thickness of ~ 100 nm, are deposited on Si (001) substrates by pulsed electron beam deposition at a temperature of ~ 320 °C, followed by annealing at 650 °C in argon in a strong magnetic field. X-ray photoelectron spectroscopy (XPS), positron annihilation analysis (PAS), and electron paramagnetic resonance (EPR) characterizations suggest that the major defects generated in these ZnO films are oxygen vacancies. Photoluminescence (PL) and magnetic property measurements indicate that the room-temperature ferromagnetism in the un-doped ZnO film originates from the singly ionized oxygen vacancies whose number depends on the strength of the magnetic field applied in the thermal annealing process. The effects of the magnetic field on the defect generation in the ZnO films are also discussed.

  2. Defect characterization and magnetic properties in un-doped ZnO thin film annealed in a strong magnetic field

    International Nuclear Information System (INIS)

    Ning Shuai; Zhan Peng; Wang Wei-Peng; Li Zheng-Cao; Zhang Zheng-Jun

    2014-01-01

    Highly c-axis oriented un-doped zinc oxide (ZnO) thin films, each with a thickness of ∼ 100 nm, are deposited on Si (001) substrates by pulsed electron beam deposition at a temperature of ∼ 320 °C, followed by annealing at 650 °C in argon in a strong magnetic field. X-ray photoelectron spectroscopy (XPS), positron annihilation analysis (PAS), and electron paramagnetic resonance (EPR) characterizations suggest that the major defects generated in these ZnO films are oxygen vacancies. Photoluminescence (PL) and magnetic property measurements indicate that the room-temperature ferromagnetism in the un-doped ZnO film originates from the singly ionized oxygen vacancies whose number depends on the strength of the magnetic field applied in the thermal annealing process. The effects of the magnetic field on the defect generation in the ZnO films are also discussed. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

  3. Preparation and Photoluminescence of ZnO Comb-Like Structure and Nanorod Arrays

    Science.gov (United States)

    Yin, Song; Chen, Yi-qing; Su, Yong; Zhou, Qing-tao

    2007-06-01

    A large quantity of Zinc oxide (ZnO) comb-like structure and high-density well-aligned ZnO nanorod arrays were prepared on silicon substrate via thermal evaporation process without any catalyst. The morphology, growth mechanism, and optical properties of the both structures were investigated using XRD, SEM, TEM and PL. The resulting comb-teeth, with a diameter about 20 nm, growing along the [0001] direction have a well-defined epitaxial relationship with the comb ribbon. The ZnO nanorod arrays have a diameter about 200 nm and length up to several micrometers growing approximately vertical to the Si substrate. A ZnO film was obtained before the nanorods growth. A growth model is proposed for interpreting the growth mechanism of comb-like zigzag-notch nanostructure. Room temperature photoluminescence measurements under excitation wavelength of 325 nm showed that the ZnO comb-like nanostructure has a weak UV emission at around 384 nm and a strong green emission around 491 nm, which correspond to a near band-edge transition and the singly ionized oxygen vacancy, respectively. In contrast, a strong and sharp UV peak and a weak green peak was obtained from the ZnO nanorod arrays.

  4. Characterizations of multilayer ZnO thin films deposited by sol-gel spin coating technique

    Directory of Open Access Journals (Sweden)

    M.I. Khan

    Full Text Available In this work, zinc oxide (ZnO multilayer thin films are deposited on glass substrate using sol-gel spin coating technique and the effect of these multilayer films on optical, electrical and structural properties are investigated. It is observed that these multilayer films have great impact on the properties of ZnO. X-ray Diffraction (XRD confirms that ZnO has hexagonal wurtzite structure. Scanning Electron Microscopy (SEM showed the crack-free films which have uniformly distributed grains structures. Both micro and nano particles of ZnO are present on thin films. Four point probe measured the electrical properties showed the decreasing trend between the average resistivity and the number of layers. The optical absorption spectra measured using UV–Vis. showed the average transmittance in the visible region of all films is 80% which is good for solar spectra. The performance of the multilayer as transparent conducting material is better than the single layer of ZnO. This work provides a low cost, environment friendly and well abandoned material for solar cells applications. Keywords: Multilayer films, Semiconductor, ZnO, XRD, SEM, Optoelectronic properties

  5. Bias-polarity-dependent UV/visible transferable electroluminescence from ZnO nanorod array LED with graphene oxide electrode supporting layer

    Science.gov (United States)

    Liu, Weizhen; Wang, Wei; Xu, Haiyang; Li, Xinghua; Yang, Liu; Ma, Jiangang; Liu, Yichun

    2015-09-01

    A simple top electrode preparation process, employing continuous graphene oxide films as electrode supporting layers, was adopted to fabricate a ZnO nanorod array/p-GaN heterojunction LED. The achieved LED demonstrated different electroluminescence behaviors under forward and reverse biases: a yellow-red emission band was observed under forward bias, whereas a blue-UV emission peak was obtained under reverse bias. Electroluminescence spectra under different currents and temperatures, as well as heterojunction energy-band alignments, reveal that the yellow-red emission under forward bias originates from recombinations related to heterointerface defects, whereas the blue-UV electroluminescence under reverse bias is ascribed to transitions from near-band-edge and Mg-acceptor levels in p-GaN.

  6. Solvothermal synthesis, characterization and optical properties of ZnO, ZnO-MgO and ZnO-NiO, mixed oxide nanoparticles

    International Nuclear Information System (INIS)

    Aslani, Alireza; Arefi, Mohammad Reza; Babapoor, Aziz; Amiri, Asghar; Beyki-Shuraki, Khalil

    2011-01-01

    ZnO-MgO and ZnO-NiO mixed oxides nanoparticles were produced from a solution containing Zinc acetate, Mg and Ni nitrate by Solvothermal method. The calcination process of the ZnO-MgO and ZnO-NiO composites nanoparticles brought forth polycrystalline two-phase ZnO-MgO and ZnO-NiO nanoparticles of 40-80 nm in diameters. ZnO, MgO and NiO were crystallized into wuertzite and rock salt structures, respectively. The optical properties of ZnO-MgO and ZnO-NiO nanoparticles were obtained by solid state UV and solid state florescent. The XRD, SEM and Raman spectroscopies of these nanoparticles were analyzed.

  7. Solvothermal synthesis, characterization and optical properties of ZnO, ZnO-MgO and ZnO-NiO, mixed oxide nanoparticles

    Science.gov (United States)

    Aslani, Alireza; Arefi, Mohammad Reza; Babapoor, Aziz; Amiri, Asghar; Beyki-Shuraki, Khalil

    2011-03-01

    ZnO-MgO and ZnO-NiO mixed oxides nanoparticles were produced from a solution containing Zinc acetate, Mg and Ni nitrate by Solvothermal method. The calcination process of the ZnO-MgO and ZnO-NiO composites nanoparticles brought forth polycrystalline two-phase ZnO-MgO and ZnO-NiO nanoparticles of 40-80 nm in diameters. ZnO, MgO and NiO were crystallized into würtzite and rock salt structures, respectively. The optical properties of ZnO-MgO and ZnO-NiO nanoparticles were obtained by solid state UV and solid state florescent. The XRD, SEM and Raman spectroscopies of these nanoparticles were analyzed.

  8. Solvothermal synthesis, characterization and optical properties of ZnO, ZnO-MgO and ZnO-NiO, mixed oxide nanoparticles

    Energy Technology Data Exchange (ETDEWEB)

    Aslani, Alireza, E-mail: a.aslani@vru.ac.ir [Department of Chemistry, Faculty of Science, Vali-E-Asr University of Rafsanjan, Rafsanjan, PO Box: 77176 (Iran, Islamic Republic of); Arefi, Mohammad Reza [Islamic Azad University, Yazd Brunch, Young researchers Club, Yazd (Iran, Islamic Republic of); Babapoor, Aziz [Department of Chemical Engineering, Ahar Branch, Islamic Azad University, Ahar, PO Box: 54516 (Iran, Islamic Republic of); Amiri, Asghar; Beyki-Shuraki, Khalil [Department of Chemistry, Faculty of Science, Vali-E-Asr University of Rafsanjan, Rafsanjan, PO Box: 77176 (Iran, Islamic Republic of)

    2011-03-15

    ZnO-MgO and ZnO-NiO mixed oxides nanoparticles were produced from a solution containing Zinc acetate, Mg and Ni nitrate by Solvothermal method. The calcination process of the ZnO-MgO and ZnO-NiO composites nanoparticles brought forth polycrystalline two-phase ZnO-MgO and ZnO-NiO nanoparticles of 40-80 nm in diameters. ZnO, MgO and NiO were crystallized into wuertzite and rock salt structures, respectively. The optical properties of ZnO-MgO and ZnO-NiO nanoparticles were obtained by solid state UV and solid state florescent. The XRD, SEM and Raman spectroscopies of these nanoparticles were analyzed.

  9. Controlled Al3+ Incorporation in the ZnO Lattice at 188 °C by Soft Reactive Co-Sputtering for Transparent Conductive Oxides

    Directory of Open Access Journals (Sweden)

    Salvatore Sanzaro

    2016-06-01

    Full Text Available Transparent conductive oxide (TCO layers, to be implemented in photo-anodes for dye-sensitized solar cells (DSCs, were prepared by co-deposition of ZnO and Al using pulsed-direct current (DC-magnetron reactive sputtering processes. The films were deposited at low deposition temperatures (RT-188 °C and at fixed working pressure (1.4 Pa using soft power loading conditions to avoid intrinsic extra-heating. To compensate the layer stoichiometry, O2 was selectively injected close to the sample in a small percentage (Ar:O2 = 69 sccm:2 sccm. We expressly applied the deposition temperature as a controlling parameter to tune the incorporation of the Al3+ species in the targeted position inside the ZnO lattice. With this method, Aluminum-doped Zinc Oxide films (ZnO:Al were grown following the typical wurtzite structure, as demonstrated by X-ray Diffraction analyses. A combination of micro-Raman, X-ray photoelectron spectroscopy (XPS and spectroscopic ellipsometry (SE analyses has shown that the incorporated host-atoms are Al3+ species in Zn2+ substitutional position; their amount increases following a direct monotonic trend with the deposition temperature. Correspondently, the c-axis strain into the layer decreases due to the progressive ordering of the lattice structure and reducing clustering phenomena. The maximum average Al content inside the film was ~2%, as measured by energy dispersive X-ray (EDX spectroscopy, with a uniform distribution of the dopant species along the layer thickness traced by depth-profile XPS analyses. The optimised ZnO:Al layer, deposited at a rate of ~7 nm/min, exhibits high transmittance in the visible range (~85% and low resistivity values (~13 mΩ × cm. The material therefore fulfils all the requirements to be candidate as TCO for low-cost DSCs on flexible substrates for large area technologies.

  10. Efficiency of Nb-Doped ZnO Nanoparticles Electrode for Dye-Sensitized Solar Cells Application

    Science.gov (United States)

    Anuntahirunrat, Jirapat; Sung, Youl-Moon; Pooyodying, Pattarapon

    2017-09-01

    The technological of Dye-sensitized solar cells (DSSCs) had been improved for several years. Due to its simplicity and low cost materials with belonging to the part of thin films solar cells. DSSCs have numerous advantages and benefits among the other types of solar cells. Many of the DSSC devices had use organic chemical that produce by specific method to use as thin film electrodes. The organic chemical that widely use to establish thin film electrodes are Zinc Oxide (ZnO), Titanium Dioxide (TiO2) and many other chemical substances. Zinc oxide (ZnO) nanoparticles had been used in DSSCs applications as thin film electrodes. Nanoparticles are a part of nanomaterials that are defined as a single particles 1-100 nm in diameter. From a few year ZnO widely used in DSSC applications because of its optical, electrical and many others properties. In particular, the unique properties and utility of ZnO structure. However the efficiency of ZnO nanoparticles based solar cells can be improved by doped various foreign impurity to change the structures and properties. Niobium (Nb) had been use as a dopant of metal oxide thin films. Using specification method to doped the ZnO nanoparticles thin film can improved the efficiencies of DSSCs. The efficiencies of Nb-doped ZnO can be compared by doping 0 at wt% to 5 at wt% in ZnO nanoparticles thin films that prepared by the spin coating method. The thin film electrodes doped with 3 at wt% represent a maximum efficiencies with the lowest resistivity of 8.95×10-4 Ω·cm.

  11. Three-dimensional hole transport in nickel oxide by alloying with MgO or ZnO

    Science.gov (United States)

    Alidoust, Nima; Carter, Emily A.

    2015-11-01

    It has been shown previously that the movement of a hole in nickel oxide is confined to two dimensions, along a single ferromagnetic plane. Such confinement may hamper hole transport when NiO is used as a p-type transparent conductor in various solar energy conversion technologies. Here, we use the small polaron model, along with unrestricted Hartree-Fock and complete active space self-consistent field calculations to show that forming substitutional MxNi1-xO alloys with M = Mg or Zn reduces the barrier for movement of a hole away from the ferromagnetic plane to which it is confined. Such reduction occurs for hole transfer alongside one or two M ions that have been substituted for Ni ions. Furthermore, the Mg and Zn ions do not trap holes on O sites in their vicinity, and NiO's transparency is preserved upon forming the alloys. Thus, forming MxNi1-xO alloys with M = Mg or Zn may enhance NiO's potential as a p-type transparent conducting oxide, by disrupting the two-dimensional confinement of holes in pure NiO.

  12. Single-cell nanotoxicity assays of superparamagnetic iron oxide nanoparticles.

    Science.gov (United States)

    Eustaquio, Trisha; Leary, James F

    2012-01-01

    Properly evaluating the nanotoxicity of nanoparticles involves much more than bulk-cell assays of cell death by necrosis. Cells exposed to nanoparticles may undergo repairable oxidative stress and DNA damage or be induced into apoptosis. Exposure to nanoparticles may cause the cells to alter their proliferation or differentiation or their cell-cell signaling with neighboring cells in a tissue. Nanoparticles are usually more toxic to some cell subpopulations than others, and toxicity often varies with cell cycle. All of these facts dictate that any nanotoxicity assay must be at the single-cell level and must try whenever feasible and reasonable to include many of these other factors. Focusing on one type of quantitative measure of nanotoxicity, we describe flow and scanning image cytometry approaches to measuring nanotoxicity at the single-cell level by using a commonly used assay for distinguishing between necrotic and apoptotic causes of cell death by one type of nanoparticle. Flow cytometry is fast and quantitative, provided that the cells can be prepared into a single-cell suspension for analysis. But when cells cannot be put into suspension without altering nanotoxicity results, or if morphology, attachment, and stain location are important, a scanning image cytometry approach must be used. Both methods are described with application to a particular type of nanoparticle, a superparamagnetic iron oxide nanoparticle (SPION), as an example of how these assays may be applied to the more general problem of determining the effects of nanomaterial exposure to living cells.

  13. Single step radiolytic synthesis of iridium nanoparticles onto graphene oxide

    International Nuclear Information System (INIS)

    Rojas, J.V.; Molina Higgins, M.C.; Toro Gonzalez, M.; Castano, C.E.

    2015-01-01

    Graphical abstract: - Highlights: • Ir nanoparticles were synthesized through a single step gamma irradiation process. • Homogeneously distributed Ir nanoparticles on graphene oxide are ∼2.3 nm in size. • Ir−O bonds evidenced the interaction of the nanoparticles with the support. - Abstract: In this work a new approach to synthesize iridium nanoparticles on reduced graphene oxide is presented. The nanoparticles were directly deposited and grown on the surface of the carbon-based support using a single step reduction method through gamma irradiation. In this process, an aqueous isopropanol solution containing the iridium precursor, graphene oxide, and sodium dodecyl sulfate was initially prepared and sonicated thoroughly to obtain a homogeneous dispersion. The samples were irradiated with gamma rays with energies of 1.17 and 1.33 MeV emitted from the spontaneous decay of the 60 Co irradiator. The interaction of gamma rays with water in the presence of isopropanol generates highly reducing species homogeneously distributed in the solution that can reduce the Ir precursor down to a zero valence state. An absorbed dose of 60 kGy was used, which according to the yield of reducing species is sufficient to reduce the total amount of precursor present in the solution. This novel approach leads to the formation of 2.3 ± 0.5 nm Ir nanoparticles distributed along the surface of the support. The oxygenated functionalities of graphene oxide served as nucleation sites for the formation of Ir nuclei and their subsequent growth. XPS results revealed that the interaction of Ir with the support occurs through Ir−O bonds.

  14. Spatial atomic layer deposition on flexible porous substrates: ZnO on anodic aluminum oxide films and Al2O3 on Li ion battery electrodes

    International Nuclear Information System (INIS)

    Sharma, Kashish; Routkevitch, Dmitri; Varaksa, Natalia; George, Steven M.

    2016-01-01

    Spatial atomic layer deposition (S-ALD) was examined on flexible porous substrates utilizing a rotating cylinder reactor to perform the S-ALD. S-ALD was first explored on flexible polyethylene terephthalate polymer substrates to obtain S-ALD growth rates on flat surfaces. ZnO ALD with diethylzinc and ozone as the reactants at 50 °C was the model S-ALD system. ZnO S-ALD was then performed on nanoporous flexible anodic aluminum oxide (AAO) films. ZnO S-ALD in porous substrates depends on the pore diameter, pore aspect ratio, and reactant exposure time that define the gas transport. To evaluate these parameters, the Zn coverage profiles in the pores of the AAO films were measured using energy dispersive spectroscopy (EDS). EDS measurements were conducted for different reaction conditions and AAO pore geometries. Substrate speeds and reactant pulse durations were defined by rotating cylinder rates of 10, 100, and 200 revolutions per minute (RPM). AAO pore diameters of 10, 25, 50, and 100 nm were utilized with a pore length of 25 μm. Uniform Zn coverage profiles were obtained at 10 RPM and pore diameters of 100 nm. The Zn coverage was less uniform at higher RPM values and smaller pore diameters. These results indicate that S-ALD into porous substrates is feasible under certain reaction conditions. S-ALD was then performed on porous Li ion battery electrodes to test S-ALD on a technologically important porous substrate. Li 0.20 Mn 0.54 Ni 0.13 Co 0.13 O 2 electrodes on flexible metal foil were coated with Al 2 O 3 using 2–5 Al 2 O 3 ALD cycles. The Al 2 O 3 ALD was performed in the S-ALD reactor at a rotating cylinder rate of 10 RPM using trimethylaluminum and ozone as the reactants at 50 °C. The capacity of the electrodes was then tested versus number of charge–discharge cycles. These measurements revealed that the Al 2 O 3 S-ALD coating on the electrodes enhanced the capacity stability. This S-ALD process could be extended to roll-to-roll operation for

  15. Improved ITO thin films for photovoltaic applications with a thin ZnO layer by sputtering

    International Nuclear Information System (INIS)

    Herrero, J.; Guillen, C.

    2004-01-01

    The improvement of the optical and electrical characteristics of indium tin oxide (ITO) layers is pursued to achieve a higher efficiency in its application as frontal electrical contacts in thin film photovoltaic devices. In order to take advantage of the polycrystalline structure of ZnO films as growth support, the properties of ITO layers prepared at room temperature by sputtering onto bare and ZnO-coated substrates have been analyzed using X-ray diffraction, optical and electrical measurements. It has been found that by inserting a thin ZnO layer, the ITO film resistivity can be reduced as compared to that of a single ITO film with similar optical transmittance. The electrical quality improvement is related to ITO grain growth enhancement onto the polycrystalline ZnO underlayer

  16. Double-layered ZnO nanostructures for efficient perovskite solar cells

    KAUST Repository

    Mahmood, Khalid; S. Swain, Bhabani; Amassian, Aram

    2014-01-01

    To date, a single layer of TiO2 or ZnO has been the most successful implementations of any electron transport layer (ETL) in solution-processed perovskite solar cells. In a quest to improve the ETL, we explore a new nanostructured double-layer ZnO film for mesoscopic perovskite-based thin film photovoltaics. This approach yields a maximum power conversion efficiency of 10.35%, which we attribute to the morphology of oxide layer and to faster electron transport. The successful implementation of the low-temperature hydrothermally processed double-layer ZnO film as ETL in perovskite solar cells highlights the opportunities to further improve the efficiencies by focusing on the ETL in this rapidly developing field. This journal is

  17. Study on Optoelectronic Characteristics of Sn-Doped ZnO Thin Films on Poly(ethylene terephthalate) and Indium Tin Oxide/Poly(ethylene terephthalate) Flexible Substrates

    Science.gov (United States)

    Cheng, Chi-Hwa; Chen, Mi; Chiou, Chin-Lung; Liu, Xing-Yang; Weng, Lin-Song; Koo, Horng-Show

    2013-05-01

    Transparent conductive oxides of Sn-doped ZnO (SZO) films with doping weight ratios of 2.0, 3.0, 4.0, and 5.0 wt % have been deposited on indium tin oxide (ITO)/poly(ethylene terephthalate) (PET) and PET flexible substrates at room temperature by pulsed laser deposition (PLD). Resultant films of SZO on ITO/PET and PET flexible substrates are amorphous in phase. It is found that undoped and SZO films on ITO/PET is anomalously better than films on PET in optical transmittance in the range of longer wavelength, possibly due to the refraction index difference between SZO, ITO films, and PET substrates, Burstein-Moss effect and optical interference of SZO/ITO bilayer films and substrate materials, and furthermore resulting in the decrement of reflection. The lowest electrical resistivity (ρ) of 4.0 wt % SZO films on flexible substrates of PET and ITO/PET are 3.8×10-2 and ρ= 1.2×10-2 Ω.cm, respectively. It is found that electrical and optical properties of the resultant films are greatly dependent on various amount of Sn element doping effect and substrate material characteristics.

  18. Morphological transition of ZnO nanostructures influenced by magnesium doping

    International Nuclear Information System (INIS)

    Premkumar, T.; Zhou, Y.S.; Gao, Y.; Baskar, K.; Jiang, L.; Lu, Y.F.

    2012-01-01

    Wurtzite zinc oxide (ZnO) nanochains have been synthesized through high-pressure pulsed laser deposition. The chain-like ZnO nanostructures were obtained from magnesium (Mg) doped ZnO targets, whereas vertically aligned nanorods were obtained from primitive ZnO targets. The Mg doping has influenced the morphological transition of ZnO nanostructures from nanorods to nanochains. The field emission scanning electron microscope images revealed the growth of beaded ZnO nanochains. The ZnO nanochains of different diameters 40 and 120 nm were obtained. The corresponding micro-Raman spectra showed strong E 2H mode of ZnO, which confirmed the good crystallinity of the nanochains. In addition to near band edge emission at 3.28 eV, ZnO nanochains show broad deep level emission at 2.42 eV than that of ZnO nanorods.

  19. Hydrogen absorption in thin ZnO films prepared by pulsed laser deposition

    International Nuclear Information System (INIS)

    Melikhova, O.; Čížek, J.; Lukáč, F.; Vlček, M.; Novotný, M.; Bulíř, J.; Lančok, J.; Anwand, W.; Brauer, G.; Connolly, J.; McCarthy, E.; Krishnamurthy, S.; Mosnier, J.-P.

    2013-01-01

    Highlights: ► Thin ZnO films and high quality ZnO crystal were electrochemically doped with hydrogen. ► Hydrogen absorbed in ZnO causes plastic deformation both in ZnO crystal and thin films. ► In ZnO crystal a sub-surface region with very high density of defects was formed. ► Moreover, plastic deformation causes specific surface modification of ZnO crystal. ► In ZnO films hydrogen-induced plastic deformation introduced defects in the whole film. -- Abstract: ZnO films with thickness of ∼80 nm were grown by pulsed laser deposition (PLD) on MgO (1 0 0) single crystal and amorphous fused silica (FS) substrates. Structural studies of ZnO films and a high quality reference ZnO single crystal were performed by slow positron implantation spectroscopy (SPIS). It was found that ZnO films exhibit significantly higher density of defects than the reference ZnO crystal. Moreover, the ZnO film deposited on MgO substrate exhibits higher concentration of defects than the film deposited on amorphous FS substrate most probably due to a dense network of misfit dislocations. The ZnO films and the reference ZnO crystal were subsequently loaded with hydrogen by electrochemical cathodic charging. SPIS characterizations revealed that absorbed hydrogen introduces new defects into ZnO

  20. Hydrogen absorption in thin ZnO films prepared by pulsed laser deposition

    Energy Technology Data Exchange (ETDEWEB)

    Melikhova, O., E-mail: oksivmel@yahoo.com [Charles University in Prague, Faculty of Mathematics and Physics, V Holesovickach 2, CZ-180 00 Praha 8 (Czech Republic); Čížek, J.; Lukáč, F.; Vlček, M. [Charles University in Prague, Faculty of Mathematics and Physics, V Holesovickach 2, CZ-180 00 Praha 8 (Czech Republic); Novotný, M.; Bulíř, J.; Lančok, J. [Institute of Physics, Academy of Sciences of the Czech Republic, Na Slovance 2, 182 21 Prague (Czech Republic); Anwand, W.; Brauer, G. [Institut für Strahlenphysik, Helmholtz-Zentrum Dresden-Rossendorf, PO Box 510 119, D-01314 Dresden (Germany); Connolly, J.; McCarthy, E.; Krishnamurthy, S.; Mosnier, J.-P. [National Centre for Plasma Science and Technology, School of Physical Sciences, Glasnevin, Dublin 9 (Ireland)

    2013-12-15

    Highlights: ► Thin ZnO films and high quality ZnO crystal were electrochemically doped with hydrogen. ► Hydrogen absorbed in ZnO causes plastic deformation both in ZnO crystal and thin films. ► In ZnO crystal a sub-surface region with very high density of defects was formed. ► Moreover, plastic deformation causes specific surface modification of ZnO crystal. ► In ZnO films hydrogen-induced plastic deformation introduced defects in the whole film. -- Abstract: ZnO films with thickness of ∼80 nm were grown by pulsed laser deposition (PLD) on MgO (1 0 0) single crystal and amorphous fused silica (FS) substrates. Structural studies of ZnO films and a high quality reference ZnO single crystal were performed by slow positron implantation spectroscopy (SPIS). It was found that ZnO films exhibit significantly higher density of defects than the reference ZnO crystal. Moreover, the ZnO film deposited on MgO substrate exhibits higher concentration of defects than the film deposited on amorphous FS substrate most probably due to a dense network of misfit dislocations. The ZnO films and the reference ZnO crystal were subsequently loaded with hydrogen by electrochemical cathodic charging. SPIS characterizations revealed that absorbed hydrogen introduces new defects into ZnO.

  1. Spatially Correlated, Single Nanomaterial-Level Structural and Optical Profiling of Cu-Doped ZnO Nanorods Synthesized via Multifunctional Silicides

    Directory of Open Access Journals (Sweden)

    Johnson Truong

    2018-04-01

    Full Text Available We demonstrate a straightforward and effective method to synthesize vertically oriented, Cu-doped ZnO nanorods (NRs using a novel multipurpose platform of copper silicide nanoblocks (Cu3Si NBs preformed laterally in well-defined directions on Si. The use of the surface-organized Cu3Si NBs for ZnO NR growth successfully results in densely assembled Cu-doped ZnO NRs on each NB platform, whose overall structures resemble thick bristles on a brush head. We show that Cu3Si NBs can uniquely serve as a catalyst for ZnO NRs, a local dopant source of Cu, and a prepatterned guide to aid the local assembly of the NRs on the growth substrate. We also ascertain the crystalline structures, optical properties, and spectroscopic signatures of the Cu-doped ZnO NRs produced on the NBs, both at each module of NRs/NB and at their ensemble level. Subsequently, we determine their augmented properties relative to the pristine form of undoped ZnO NRs and the source material of Cu3Si NBs. We provide spatially correlated structural and optical data for individual modules of Cu-doped ZnO NRs assembled on a Cu3Si NB by resolving them along the different positions on the NB. Ensemble-averaged versus individual behaviors of Cu-doped ZnO NRs on Cu3Si NBs are then compared. We further discuss the potential impact of such ZnO-derived NRs on their relatively unexplored biological and biomedical applications. Our efforts will be particularly useful when exploiting each integrated module of self-aligned, Cu-doped ZnO NRs on a NB as a discretely addressable, active element in solid-state sensors and miniaturized luminescent bioprobes.

  2. Non-vacuum, single-step conductive transparent ZnO patterning by ultra-short pulsed laser annealing of solution-deposited nanoparticles

    Energy Technology Data Exchange (ETDEWEB)

    Lee, Daeho; Pan, Heng; Kim, Eunpa; Grigoropoulos, Costas P. [University of California, Department of Mechanical Engineering, Berkeley, CA (United States); Ko, Seung Hwan [Korea Advanced Institute of Science and Technology (KAIST), Department of Mechanical Engineering, Daejeon (Korea, Republic of); Park, Hee K. [AppliFlex LLC, Sunnyvale, CA (United States)

    2012-04-15

    A solution-processable, high-concentration transparent ZnO nanoparticle (NP) solution was successfully synthesized in a new process. A highly transparent ZnO thin film was fabricated by spin coating without vacuum deposition. Subsequent ultra-short-pulsed laser annealing at room temperature was performed to change the film properties without using a blanket high temperature heating process. Although the as-deposited NP thin film was not electrically conductive, laser annealing imparted a large conductivity increase and furthermore enabled selective annealing to write conductive patterns directly on the NP thin film without a photolithographic process. Conductivity enhancement could be obtained by altering the laser annealing parameters. Parametric studies including the sheet resistance and optical transmittance of the annealed ZnO NP thin film were conducted for various laser powers, scanning speeds and background gas conditions. The lowest resistivity from laser-annealed ZnO thin film was about 4.75 x 10{sup -2} {omega} cm, exhibiting a factor of 10{sup 5} higher conductivity than the previously reported furnace-annealed ZnO NP film and is even comparable to that of vacuum-deposited, impurity-doped ZnO films within a factor of 10. The process developed in this work was applied to the fabrication of a thin film transistor (TFT) device that showed enhanced performance compared with furnace-annealed devices. A ZnO TFT performance test revealed that by just changing the laser parameters, the solution-deposited ZnO thin film can also perform as a semiconductor, demonstrating that laser annealing offers tunability of ZnO thin film properties for both transparent conductors and semiconductors. (orig.)

  3. Single-ion and single-chain magnetism in triangular spin-chain oxides

    Science.gov (United States)

    Seikh, Md. Motin; Caignaert, Vincent; Perez, Olivier; Raveau, Bernard; Hardy, Vincent

    2017-05-01

    S r4 -xC axM n2Co O9 oxides (x =0 and x =2 ) are found to exhibit magnetic responses typical of single-chain magnets (SCMs) and single-ion magnets (SIMs), two features generally investigated in coordination polymers or complexes. The compound x =0 appears to be a genuine SCM, in that blocking effects associated with slow spin dynamics yield remanence and coercivity in the absence of long-range ordering (LRO). In addition, SIM signatures of nearly identical nature are detected in both compounds, coexisting with SCM in x =0 and with LRO in x =2 . It is also observed that a SCM response can be recovered in x =2 after application of magnetic field. These results suggest that purely inorganic systems could play a valuable role in the topical issue of the interplay among SIM, SCM, and LRO phenomena in low-dimensional magnetism.

  4. Effects of growth duration on the structural and optical properties of ZnO nanorods grown on seed-layer ZnO/polyethylene terephthalate substrates

    Energy Technology Data Exchange (ETDEWEB)

    Jeong, Y.I.; Shin, C.M.; Heo, J.H. [Department of Nano Systems Engineering, Center for Nano Manufacturing Inje University, Gimhae, Gyeongnam 621-749 (Korea, Republic of); Ryu, H., E-mail: hhryu@inje.ac.kr [Department of Nano Systems Engineering, Center for Nano Manufacturing Inje University, Gimhae, Gyeongnam 621-749 (Korea, Republic of); Lee, W.J. [Department of Nano Engineering, Dong-Eui University, Busan 614-714 (Korea, Republic of); Chang, J.H. [Major of Nano Semiconductor, Korea Maritime University, Busan 606-791 (Korea, Republic of); Son, C.S. [Department of Electronic Materials Engineering, Silla University, Busan 617-736 (Korea, Republic of); Yun, J. [Department of Nano Science and Engineering, Institute of Advanced Materials Kyungnam University, Changwon, Gyeongnam 631-701 (Korea, Republic of)

    2011-10-01

    Well-aligned single crystalline zinc oxide (ZnO) nanorods were successfully grown, by hydrothermal synthesis at a low temperature, on flexible polyethylene terephthalate (PET) substrates with a seed layer. Photoluminescence (PL), field-emission scanning electron microscopy (FE-SEM), X-ray diffraction (XRD) and high-resolution transmission electron microscopy (HRTEM) measurements were used to analyze the optical and structural properties of ZnO nanorods grown for various durations from 0.5 h to 10 h. Regular and well-aligned ZnO nanorods with diameters ranging from 62 nm to 127 nm and lengths from 0.3 {mu}m to 1.65 {mu}m were formed after almost 5 h of growth. The growth rate of ZnO grown on PET substrates is lower than that grown on Si (1 0 0) substrates. Enlarged TEM images show that the tips of the ZnO nanorods grown for 6 h have a round shape, whereas the tips grown for 10 h are sharpened. The crystal properties of ZnO nanorods can be tuned by using the growth duration as a growth condition. The XRD and PL results indicate that the structural and optical properties of the ZnO nanorods are most improved after 5 h and 6 h of growth, respectively.

  5. Photo and radiation induced synthesis of (Ni, Zn)O or mixed NiO–ZnO oxides

    Czech Academy of Sciences Publication Activity Database

    Pavelková, T.; Procházková, L.; Čuba, V.; Múčka, V.; Pospíšil, M.; Jakubec, Ivo

    2015-01-01

    Roč. 304, č. 1 (2015), s. 245-250 ISSN 0236-5731 Institutional support: RVO:61388980 Keywords : Nickel oxide * Solid solution * Zinc oxide * Ionizing radiation * UV radiation * Chemical synthesis Subject RIV: CA - Inorganic Chemistry Impact factor: 0.983, year: 2015

  6. Acceptors in ZnO

    Energy Technology Data Exchange (ETDEWEB)

    McCluskey, Matthew D., E-mail: mattmcc@wsu.edu; Corolewski, Caleb D.; Lv, Jinpeng; Tarun, Marianne C.; Teklemichael, Samuel T. [Department of Physics and Astronomy, Washington State University, Pullman, Washington 99164-2814 (United States); Walter, Eric D. [Environmental Molecular Sciences Laboratory, Pacific Northwest National Laboratory, Richland, Washington 99352 (United States); Norton, M. Grant; Harrison, Kale W. [School of Mechanical and Materials Engineering, Washington State University, Pullman, Washington 99164-2920 (United States); Ha, Su [Voiland School of Chemical Engineering and Bioengineering, Washington State University, Pullman, Washington 99164-6515 (United States)

    2015-03-21

    Zinc oxide (ZnO) has potential for a range of applications in the area of optoelectronics. The quest for p-type ZnO has focused much attention on acceptors. In this paper, Cu, N, and Li acceptor impurities are discussed. Experimental evidence indicates these point defects have acceptor levels 3.2, 1.4, and 0.8 eV above the valence-band maximum, respectively. The levels are deep because the ZnO valence band is quite low compared to conventional, non-oxide semiconductors. Using MoO{sub 2} contacts, the electrical resistivity of ZnO:Li was measured and showed behavior consistent with bulk hole conduction for temperatures above 400 K. A photoluminescence peak in ZnO nanocrystals is attributed to an acceptor, which may involve a Zn vacancy. High field (W-band) electron paramagnetic resonance measurements on the nanocrystals revealed an axial center with g{sub ⊥} = 2.0015 and g{sub //} = 2.0056, along with an isotropic center at g = 2.0035.

  7. Three-Dimensional ZnO Hierarchical Nanostructures: Solution Phase Synthesis and Applications

    Directory of Open Access Journals (Sweden)

    Xiaoliang Wang

    2017-11-01

    Full Text Available Zinc oxide (ZnO nanostructures have been studied extensively in the past 20 years due to their novel electronic, photonic, mechanical and electrochemical properties. Recently, more attention has been paid to assemble nanoscale building blocks into three-dimensional (3D complex hierarchical structures, which not only inherit the excellent properties of the single building blocks but also provide potential applications in the bottom-up fabrication of functional devices. This review article focuses on 3D ZnO hierarchical nanostructures, and summarizes major advances in the solution phase synthesis, applications in environment, and electrical/electrochemical devices. We present the principles and growth mechanisms of ZnO nanostructures via different solution methods, with an emphasis on rational control of the morphology and assembly. We then discuss the applications of 3D ZnO hierarchical nanostructures in photocatalysis, field emission, electrochemical sensor, and lithium ion batteries. Throughout the discussion, the relationship between the device performance and the microstructures of 3D ZnO hierarchical nanostructures will be highlighted. This review concludes with a personal perspective on the current challenges and future research.

  8. Enhanced Raman scattering and nonlinear conductivity in Ag-doped hollow ZnO microspheres

    Energy Technology Data Exchange (ETDEWEB)

    Tringe, Joseph W.; Levie, Harold W.; McCall, Scott K.; Teslich, Nick E.; Wall, Mark A.; Orme, Christine A.; Matthews, Manyalibo J. [Lawrence Livermore National Laboratory, Livermore, CA (United States)

    2012-10-15

    Hollow spherical ZnO particles doped with Ag were synthesized with a two-step oxidation and sublimation furnace annealing process. Ag nanoparticle precipitates, as observed by transmission electron microscopy, were present in the polycrystalline ZnO matrix at Ag concentrations below 0.02 mol%, significantly below the 0.8 mol% solubility limit for Ag in ZnO. Enhanced Raman scattering of ZnO phonon modes is observed, increasing with Ag nanoparticle concentration. A further enhancement in Raman scattering due to resonance effects was observed for LO phonons excited by 2.33-eV photons as compared with Raman scattering under 1.96-eV excitation. Room-temperature photoluminescence spectra showed both a near-band-edge emission due to free exciton transitions and a mid-gap transition due to the presence of singly ionized oxygen vacancies. ZnO:Ag particles were measured electrically in a packed column and in monolithic form, and in both cases displayed nonlinear current-voltage characteristics similar to those previously observed in sintered ZnO:Ag monoliths where Ag-enhanced disorder at grain boundaries is thought to control current transport. We demonstrate therefore that Ag simultaneously modifies the electrical and optical properties of ZnO particles through the introduction of vacancies and other defects. (orig.)

  9. Synthesis, effect of capping agents, structural, optical and photoluminescence properties of ZnO nanoparticles

    International Nuclear Information System (INIS)

    Singh, A.K.; Viswanath, V.; Janu, V.C.

    2009-01-01

    Zinc oxide nanoparticles were synthesized using chemical method in alcohol base. During synthesis three capping agents, i.e. triethanolamine (TEA), oleic acid and thioglycerol, were used and the effect of concentrations was analyzed for their effectiveness in limiting the particle growth. Thermal stability of ZnO nanoparticles prepared using TEA, oleic acid and thioglycerol capping agents, was studied using thermogravimetric analyzer (TGA). ZnO nanoparticles capped with TEA showed maximum weight loss. X-ray diffraction (XRD) and scanning electron microscopy (SEM) were used for structural and morphological characterization of ZnO nanoparticles. Particle size was evaluated using effective mass approximation method from UV-vis spectroscopy and Scherrer's formula from XRD patterns. XRD analysis revealed single crystal ZnO nanoparticles of size 12-20 nm in case of TEA capping. TEA, oleic acid and thioglycerol capped synthesized ZnO nanoparticles were investigated at room temperature photoluminescence for three excitation wavelengths i.e. 304, 322 and 325 nm, showing strong peaks at about 471 nm when excited at 322 and 325 nm whereas strong peak was observed at 411 for 304 nm excitation.

  10. Twinning in ZnO ceramics with Sb sub 2 O sub 3 additions

    Energy Technology Data Exchange (ETDEWEB)

    Senda, T. (Ministry of Transportation, Tokyo (Japan). Ship Research Inst.); Bradt, R.C. (Univ. of Nevada-Reno, Nevada (U.S.A.). Mackay School of Mines)

    1991-09-01

    A mechanism is proposed for the nucleation of ZnO growth twins which is based on the crystallography of the wurtzite and spinel structures. In this paper, possible twin origins from either phase transformation or a result of deformation are both rejected. It is concluded that the ZnO twins are growth twins which nucleate in the early stages of sintering and grain growth of the ceramic powder compacts. Consideration of the oxygen anion stacking layer sequences in the hexagonal ZnO wurtzite structure and the cubic Zn {sub 7} Sb {sub 2} O {sub 12} spinel structure suggests that the nuclei for the twins may form as embryos consisting of a faulted region of the spinel-oxygen anion layer stacking sequence. And then, the faulted layer sequence is created by the presence of the antimony oxide and its reaction with the ZnO. Further, the fact that the wurtzite structure is polar and the ZnO twins are inversion twins explains why there is only a single twin per grain, as multiple twins would result in the unfavorable structural configuration. 24 refs., 2 figs.

  11. Dispersive solid-phase extraction for the determination of trace organochlorine pesticides in apple juices using reduced graphene oxide coated with ZnO nanocomposites as sorbent.

    Science.gov (United States)

    Sun, Ting; Sun, Hefeng; Zhao, Feng

    2017-09-01

    In this work, reduced graphene oxide coated with ZnO nanocomposites was used as an efficient sorbent of dispersive solid-phase extraction and successfully applied for the extraction of organochlorine pesticides from apple juice followed by gas chromatography with mass spectrometry. Several experimental parameters affecting the extraction efficiencies, including the amount of adsorbent, extraction time, and the pH of the sample solution, as well as the type and volume of eluent solvent, were investigated and optimized. Under the optimal experimental conditions, good linearity existed in the range of 1.0-200.0 ng/mL for all the analytes with the correlation coefficients (R 2 ) ranging from 0.9964 to 0.9994. The limits of detection of the method for the compounds were 0.011-0.053 ng/mL. Good reproducibilities were acquired with relative standard deviations below 8.7% for both intraday and interday precision. The recoveries of the method were in the range of 78.1-105.8% with relative standard deviations of 3.3-6.9%. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  12. The effect of the solution flow rate on the properties of zinc oxide (ZnO) thin films deposited by ultrasonic spray

    International Nuclear Information System (INIS)

    Attaf, A.; Benkhetta, Y.; Saidi, H.; Bouhdjar, A.; Bendjedidi, H.; Nouadji, M.; Lehraki, N.

    2015-01-01

    In this work, we used a system based on ultrasonic spray pyrolysis technique. By witch, we have deposited thin films of zinc oxide (ZnO) with the variation of solution flow rate from 50 ml / h to 150 ml / h, and set other parameters such as the concentration of the solution, the deposition time, substrate temperature and the nozzel -substrate distance. In order to study the influence of the solution flow rate on the properties of the films produced, we have several characterization techniques such as X-ray diffraction to determine the films structure, the scanning electron microscopy SEM for the morphology of the surfaces, EDS spectroscopy for the chemical composition, UV-Visible-Nir spectroscopy for determination the optical proprieties of thin films.The experimental results show that: the films have hexagonal structure at the type (wurtzite), the average size of grains varies from 20.11 to 32.45 nm, the transmittance of the films equals 80% in visible rang and the band gap is varied between 3.274 and 3.282 eV, when the solution flow rate increases from 50 to 150 ml/h

  13. The effect of the solution flow rate on the properties of zinc oxide (ZnO) thin films deposited by ultrasonic spray

    Science.gov (United States)

    Attaf, A.; Benkhetta, Y.; Saidi, H.; Bouhdjar, A.; Bendjedidi, H.; Nouadji, M.; Lehraki, N.

    2015-03-01

    In this work, we used a system based on ultrasonic spray pyrolysis technique. By witch, we have deposited thin films of zinc oxide (ZnO) with the variation of solution flow rate from 50 ml / h to 150 ml / h, and set other parameters such as the concentration of the solution, the deposition time, substrate temperature and the nozzel -substrate distance. In order to study the influence of the solution flow rate on the properties of the films produced, we have several characterization techniques such as X-ray diffraction to determine the films structure, the scanning electron microscopy SEM for the morphology of the surfaces, EDS spectroscopy for the chemical composition, UV-Visible-Nir spectroscopy for determination the optical proprieties of thin films.The experimental results show that: the films have hexagonal structure at the type (wurtzite), the average size of grains varies from 20.11 to 32.45 nm, the transmittance of the films equals 80% in visible rang and the band gap is varied between 3.274 and 3.282 eV, when the solution flow rate increases from 50 to 150 ml/h.

  14. Formation of ZnO at zinc oxidation by near- and supercritical water under the constant electric field

    Science.gov (United States)

    Shishkin, A. V.; Sokol, M. Ya.; Shatrova, A. V.; Fedyaeva, O. N.; Vostrikov, A. A.

    2014-12-01

    The work has detected an influence of a constant electric field (up to E = 300 kV/m) on the structure of a nanocrystalline layer of zinc oxide, formed on the surface of a planar zinc anode in water under supercritical (673 K and 23 MPa) and near-critical (673 K and 17. 5 MPa) conditions. The effect of an increase of zinc oxidation rate with an increase in E is observed under supercritical conditions and is absent at near-critical ones. Increase in the field strength leads to the formation of a looser structure in the inner part of the zinc oxide layer.

  15. Electrodeposition of Cu-doped ZnO nanowire arrays and heterojunction formation with p-GaN for color tunable light emitting diode applications

    International Nuclear Information System (INIS)

    Lupan, O.; Pauporté, T.; Viana, B.; Aschehoug, P.

    2011-01-01

    Highlights: ► High quality copper-doped zinc oxide nanowires were electrochemically grown at low temperature. ► ZnO:Cu nanowires have been epitaxially grown on Mg-doped p-GaN single-crystalline layers. ► The (ZnO:Cu NWs)/(p-GaN:Mg) heterojunction was used to fabricate a light-emitting diode structure. ► The photo- and electroluminescence emission was red-shifted to the violet spectral region compared to pure ZnO. ► The results are of importance for band-gap engineering of ZnO and for color-tunable LED. - Abstract: Copper-doped zinc oxide (ZnO:Cu) nanowires (NWs) were electrochemically deposited at low temperature on fluor-doped tin oxide (FTO) substrates. The electrochemical behavior of the Cu–Zn system for Cu-doped ZnO electrodeposition was studied and the electrochemical reaction mechanism is discussed. The synthesized ZnO arrayed layers were investigated by using SEM, XRD, EDX, photoluminescence and Raman techniques. X-ray diffraction analysis demonstrates a decrease in the lattice parameters of Cu-doped ZnO NWs. Structural analyses show that the nanomaterial is of hexagonal structure with the Cu incorporated in ZnO NWs probably by substituting zinc in the host lattice. Photoluminescence studies on pure and Cu-doped ZnO NWs shows that the near band edge emission is red-shifted by about 5 or 12 nm depending on Cu(II) concentration in the electrolytic bath solution (3 or 6 μmol l −1 ). Cu-doped ZnO NWs have been also epitaxially grown on Mg doped p-GaN single-crystalline layers and the (ZnO:Cu NWs)/(p-GaN:Mg) heterojunction has been used to fabricate a light-emitting diode (LED) structure. The emission was red-shifted to the visible violet spectral region compared to pure ZnO. The present work demonstrates the ability of electrodeposition to produce high quality ZnO nanowires with tailored optical properties by doping. The obtained results are of great importance for further studies on bandgap engineering of ZnO, for color-tunable LED applications

  16. Room temperature ferromagnetism in Cu doped ZnO

    Science.gov (United States)

    Ali, Nasir; Singh, Budhi; Khan, Zaheer Ahmed; Ghosh, Subhasis

    2018-05-01

    We report the room temperature ferromagnetism in 2% Cu doped ZnO films grown by RF magnetron sputtering in different argon and oxygen partial pressure. X-ray photoelectron spectroscopy was used to ascertain the oxidation states of Cu in ZnO. The presence of defects within Cu-doped ZnO films can be revealed by electron paramagnetic resonance. It has been observed that saturated magnetic moment increase as we increase the zinc vacancies during deposition.

  17. Hydrogen absorption in thin ZnO films prepared by pulsed laser deposition

    OpenAIRE

    Meilkhova, O.; Čížek, J.; Lukáč,, F.; Vlček, M.; Novotný, M.; Bulíř, J.; Lančok, J.; Anwand, W.; Brauer, G.; Connolly, J.; McCarthy, E.; Krishnamurthy, S.; Mosnier, J.-P.

    2013-01-01

    ZnO films with thickness of ~80 nm were grown by pulsed laser deposition (PLD) on MgO (1 0 0) single crystal and amorphous fused silica (FS) substrates. Structural studies of ZnO films and a high quality reference ZnO single crystal were performed by slow positron implantation spectroscopy (SPIS). It was found that ZnO films exhibit significantly higher density of defects than the reference ZnO crystal. Moreover, the ZnO film deposited on MgO substrate exhibits higher concentration of defects...

  18. Thin films of metal oxides on metal single crystals: Structure and growth by scanning tunneling microscopy

    International Nuclear Information System (INIS)

    Galloway, H.C.

    1995-12-01

    Detailed studies of the growth and structure of thin films of metal oxides grown on metal single crystal surfaces using Scanning Tunneling Microscopy (STM) are presented. The oxide overlayer systems studied are iron oxide and titanium oxide on the Pt(III) surface. The complexity of the metal oxides and large lattice mismatches often lead to surface structures with large unit cells. These are particularly suited to a local real space technique such as scanning tunneling microscopy. In particular, the symmetry that is directly observed with the STM elucidates the relationship of the oxide overlayers to the substrate as well as distinguishing, the structures of different oxides

  19. Rapid Hydrothermal Synthesis of Zinc Oxide Nanowires by Annealing Methods on Seed Layers

    Directory of Open Access Journals (Sweden)

    Jang Bo Shim

    2011-01-01

    Full Text Available Well-aligned zinc oxide (ZnO nanowire arrays were successfully synthesized on a glass substrate using the rapid microwave heating process. The ZnO seed layers were produced by spinning the precursor solutions onto the substrate. Among coatings, the ZnO seed layers were annealed at 100°C for 5 minutes to ensure particle adhesion to the glass surface in air, nitrogen, and vacuum atmospheres. The annealing treatment of the ZnO seed layer was most important for achieving the high quality of ZnO nanowire arrays as ZnO seed nanoparticles of larger than 30 nm in diameter evolve into ZnO nanowire arrays. Transmission electron microscopy analysis revealed a single-crystalline lattice of the ZnO nanowires. Because of their low power (140 W, low operating temperatures (90°C, easy fabrication (variable microwave sintering system, and low cost (90% cost reduction compared with gas condensation methods, high quality ZnO nanowires created with the rapid microwave heating process show great promise for use in flexible solar cells and flexible display devices.

  20. Synthesis of highly conductive thin-walled Al-doped ZnO single-crystal microtubes by a solid state method

    Science.gov (United States)

    Hu, Shuopeng; Wang, Yue; Wang, Qiang; Xing, Cheng; Yan, Yinzhou; Jiang, Yijian

    2018-06-01

    ZnO has attracted considerable attention in fundamental studies and practical applications for the past decade due to its outstanding performance in gas sensing, photocatalytic degradation, light harvesting, UV-light emitting/lasing, etc. The large-sized thin-walled ZnO (TW-ZnO) microtube with stable and rich VZn-related acceptors grown by optical vapor supersaturated precipitation (OVSP) is a novel multifunctional optoelectronic material. Unfortunately, the OVSP cannot achieve doping due to the vapor growth process. To obtain doped TW-ZnO microtubes, a solid state method is introduced in this work to achieve thin-walled Al-doping ZnO (TW-ZnO:Al) microtubes with high electrical conductivity. The morphology and microstructures of ZnO:Al microtubes are similar to undoped ones. The Al3+ ions are confirmed to substitute Zn2+ sites and Zn(0/-1) vacancies in the lattice of ZnO by EDS, XRD, Raman and temperature-dependent photoluminescence analyses. The Al dopant acting as a donor level offers massive free electrons to increase the carrier concentrations. The resistivity of the ZnO:Al microtube is reduced down to ∼10-3 Ω·cm, which is one order of magnitude lower than that of the undoped microtube. The present work provides a simple way to achieve doped ZnO tubular components for potential device applications in optoelectronics.

  1. Ultrasonic-assisted fabrication of superhydrophobic ZnO nanowall ...

    Indian Academy of Sciences (India)

    The results suggested that the synergistic effect of the aluminium oxide seed layer and sonochemical process can enable the formation of ZnO nanowall structures favourable for superhydrophobic property. A possible growth mechanism of ZnO nanowalls formation during sonication process has been discussed in detail.

  2. The influence of defect drift in external electric field on green luminescence of ZnO single crystals

    International Nuclear Information System (INIS)

    Korsunska, N.O.; Borkovska, L.V.; Bulakh, B.M.; Khomenkova, L.Yu.; Kushnirenko, V.I.; Markevich, I.V.

    2003-01-01

    In nominally undoped Zn O single crystals, the influence of electric field on photoluminescence in visible wavelength range was investigated. A well-known broad unstructured band consisting of green and orange ones was observed. It was found that the action of direct electric field of about 100 V/cm at 600-700 deg. C resulted in the increase of green band intensity near the cathode and its decrease near the anode, while orange band intensity was not influenced by this treatment. The redistribution of green band intensity along the sample under electric field is accounted for by drift of zinc interstitials from the anode to the cathode. It is supposed that emitting centres responsible for green luminescence are complex defects including zinc interstitials

  3. Unique temporal and spatial biomolecular emission profile on individual zinc oxide nanorods

    Science.gov (United States)

    Singh, Manpreet; Song, Sheng; Hahm, Jong-In

    2013-12-01

    Zinc oxide nanorods (ZnO NRs) have emerged in recent years as extremely useful, optical signal-enhancing platforms in DNA and protein detection. Although the use of ZnO NRs in biodetection has been demonstrated so far in systems involving many ZnO NRs per detection element, their future applications will likely take place in a miniaturized setting while exploiting single ZnO NRs in a low-volume, high-throughput bioanalysis. In this paper, we investigate temporal and spatial characteristics of the biomolecular fluorescence on individual ZnO NR systems. Quantitative and qualitative examinations of the biomolecular intensity and photostability are carried out as a function of two important criteria, the time and position along the long axis (length) of NRs. Photostability profiles are also measured with respect to the position on NRs and compared to those characteristics of biomolecules on polymeric control platforms. Unlike the uniformly distributed signal observed on the control platforms, both the fluorescence intensity and photostability are position-dependent on individual ZnO NRs. We have identified a unique phenomenon of highly localized, fluorescence intensification on the nanorod ends (FINE) of well-characterized, individual ZnO nanostructures. When compared to the polymeric controls, the biomolecular fluorescence intensity and photostability are determined to be higher on individual ZnO NRs regardless of the position on NRs. We have also carried out finite-difference time-domain simulations the results of which are in good agreement with the observed FINE. The outcomes of our investigation will offer a much needed basis for signal interpretation for biodetection devices and platforms consisting of single ZnO NRs and, at the same time, contribute significantly to provide insight in understanding the biomolecular fluorescence observed from ZnO NR ensemble-based systems.Zinc oxide nanorods (ZnO NRs) have emerged in recent years as extremely useful, optical

  4. Microstructure and optical properties of nanocrystalline ZnO and ZnO:(Li or Al) thin films

    Energy Technology Data Exchange (ETDEWEB)

    Oral, A. Yavuz [Department of Materials Science and Engineering, Gebze Institute of Technology, Gebze 41400 (Turkey)]. E-mail: aoral@gyte.edu.tr; Bahsi, Z. Banu [Department of Materials Science and Engineering, Gebze Institute of Technology, Gebze 41400 (Turkey); Aslan, M. Hasan [Department of Physics, Gebze Institute of Technology, Gebze 41400 (Turkey)

    2007-03-15

    Zinc oxide thin films (ZnO, ZnO:Li, ZnO:Al) were deposited on glass substrates by a sol-gel technique. Zinc acetate, lithium acetate, and aluminum chloride were used as metal ion sources in the precursor solutions. XRD analysis revealed that Li doped and undoped ZnO films formed single phase zincite structure in contrast to Al:ZnO films which did not fully crystallize at the annealing temperature of 550 deg. C. Crystallized films had a grain size under 50 nm and showed c-axis grain orientation. All films had a very smooth surface with RMS surface roughness values between 0.23 and 0.35 nm. Surface roughness and optical band tail values increased by Al doping. Compared to undoped ZnO films, Li doping slightly increased the optical band gap of the films.

  5. Admittance spectroscopy of spray-pyrolyzed ZnO film

    International Nuclear Information System (INIS)

    Kavasoglu, Nese; Kavasoglu, A. Sertap

    2008-01-01

    A ZnO film was deposited using the spray pyrolysis method. The admittance spectroscopy method was used to establish the contributions to electrical behavior from grains, grain boundaries, and electrodes of film. Proper equivalent electrical circuit of a ZnO film composed of a single parallel resistor, capacitor, and inductor network connected with a series resistance was proposed. Moreover, we displayed metal-semiconductor transition (MST) in the ZnO film via admittance spectroscopy

  6. Strain-free GaN thick films grown on single crystalline ZnO buffer layer with in situ lift-off technique

    International Nuclear Information System (INIS)

    Lee, S. W.; Minegishi, T.; Lee, W. H.; Goto, H.; Lee, H. J.; Lee, S. H.; Lee, Hyo-Jong; Ha, J. S.; Goto, T.; Hanada, T.; Cho, M. W.; Yao, T.

    2007-01-01

    Strain-free freestanding GaN layers were prepared by in situ lift-off process using a ZnO buffer as a sacrificing layer. Thin Zn-polar ZnO layers were deposited on c-plane sapphire substrates, which was followed by the growth of Ga-polar GaN layers both by molecular beam epitaxy (MBE). The MBE-grown GaN layer acted as a protecting layer against decomposition of the ZnO layer and as a seeding layer for GaN growth. The ZnO layer was completely in situ etched off during growth of thick GaN layers at low temperature by hydride vapor phase epitaxy. Hence freestanding GaN layers were obtained for the consecutive growth of high-temperature GaN thick layers. The lattice constants of freestanding GaN agree with those of strain-free GaN bulk. Extensive microphotoluminescence study indicates that strain-free states extend throughout the high-temperature grown GaN layers

  7. ZnO quantum dots–decorated ZnO nanowires for the enhancement of antibacterial and photocatalytic performances

    International Nuclear Information System (INIS)

    Wu, Jyh Ming; Tsay, Li-Yi

    2015-01-01

    We demonstrate highly antibacterial activities for killing off Staphylococcus aureus and Escherichia coli using ZnO nanowires decorated with ZnO quantum dots (so-called ZnO QDs/NWs) under visible-light irradiation and dark conditions. The average size of the ZnO QDs is in the range of 3–5 nm; these were uniformly dispersed on the ZnO nanowires’ surface to form the ZnO QDs/NWs. A significant blue-shift effect was observed using photoluminescence (PL) spectra. The size of the ZnO QDs is strongly dependent on the material’s synthesis time. The ZnO QDs/NWs exhibited an excellent photocatalytic activity under visible-light irradiation. The ZnO QDs’ active sites (i.e. the O–H bond and Zn"2"+) accelerate the photogenerated-carrier migration from the QDs to the NWs. As a consequence, the electrons reacted with the dissolved oxygen to form oxygen ions and produced hydroperoxyl radicals to enhance photocatalytic activity. The antibacterial activities (as indicated by R-factor-inhibiting activity) of the ZnO QDs/NWs for killing off Staphylococcus aureus and Escherichia coli is around 4.9 and 5.5 under visible-light irradiation and dark conditions, respectively. The hydroxyl radicals served as an efficient oxidized agent for decomposing the organic dye and microorganism species. The antibacterial activities of the ZnO QDs/NWs in the dark may be attributed to the Zn"2"+ ions that were released from the ZnO QDs and infused into the microbial solution against the growth of bacteria thus disrupting the microorganism. The highly antibacterial and photocatalytic activity of the ZnO QDs/NWs can be well implanted on a screen window, thus offering a promising solution to inhibit the spread of germs under visible-light and dark conditions. (paper)

  8. Structural, Optical and Electrical Properties of Transparent Conducting Oxide Based on Al Doped ZnO Prepared by Spray Pyrolysis

    Directory of Open Access Journals (Sweden)

    Abdeslam DOUAYAR

    2014-05-01

    Full Text Available Aluminum doped zinc oxide (AZO thin films were deposited on glass substrates at 350 °C by spray pyrolysis technique. X-ray diffraction patterns show that the undoped and AZO films exhibit the hexagonal wűrtzite crystal structure with a preferential orientation along 2 direction. AFM images showed that AZO film with 3 % of Al has a uniform grain sizes with a surface roughness of about 24 nm. All films present a high transmittance in the visible range. Both undoped and AZO films were n-type degenerate semiconductor and the best electrical resistivity value was around 8.0 ´ 10- 2 W.cm obtained for 3 % Al content.

  9. Carbon dioxide adsorption on a ZnO(101[combining macron]0) substrate studied by infrared reflection absorption spectroscopy.

    Science.gov (United States)

    Buchholz, Maria; Weidler, Peter G; Bebensee, Fabian; Nefedov, Alexei; Wöll, Christof

    2014-01-28

    The adsorption of carbon dioxide on the mixed-terminated ZnO(101[combining macron]0) surface of a bulk single crystal was studied by UHV Infrared Reflection Absorption Spectroscopy (IRRAS). In contrast to metals, the classic surface selection rule for IRRAS does not apply to bulk oxide crystals, and hence vibrational bands can also be observed for s-polarized light. Although this fact substantially complicates data interpretation, a careful analysis allows for a direct determination of the adsorbate geometry. Here, we demonstrate the huge potential of IR-spectroscopy for investigations on oxide single crystal surfaces by considering all three components of the incident polarized light separately. We find that the tridentate (surface) carbonate is aligned along the [0001] direction. A comparison to data reported previously for CO2 adsorbed on the surfaces of ZnO nanoparticles provides important insight into the role of defects in the surface chemistry of powder particles.

  10. Wafer-Scale High-Throughput Ordered Growth of Vertically Aligned ZnO Nanowire Arrays

    KAUST Repository

    Wei, Yaguang; Wu, Wenzhuo; Guo, Rui; Yuan, Dajun; Das, Suman; Wang, Zhong Lin

    2010-01-01

    -synthesized morphology. The development of textured ZnO seed layers for replacing single crystalline GaN and ZnO substrates extends the large-scale fabrication of vertically aligned ZnO NW arrays on substrates of other materials, such as polymers, Si, and glass

  11. Comparison of modification strategies towards enhanced charge carrier separation and photocatalytic degradation activity of metal oxide semiconductors (TiO{sub 2}, WO{sub 3} and ZnO)

    Energy Technology Data Exchange (ETDEWEB)

    Kumar, S. Girish [Department of Physics, Indian Institute of Science, Bengaluru, 560012 Karnataka (India); Department of Chemistry, School of Engineering and Technology, CMR University, Bengaluru, 562149, Karnataka (India); Rao, K.S.R. Koteswara, E-mail: raoksrk@gmail.com [Department of Physics, Indian Institute of Science, Bengaluru, 560012 Karnataka (India)

    2017-01-01

    Graphical abstract: Semiconductor metal oxides: Modifications, charge carrier dynamics and photocatalysis. - Highlights: • TiO{sub 2}, WO{sub 3} and ZnO based photocatalysis is reviewed. • Advances to improve the efficiency are emphasized. • Differences and similarities in the modifications are highlighted. • Charge carrier dynamics for each strategy are discussed. - Abstract: Metal oxide semiconductors (TiO{sub 2}, WO{sub 3} and ZnO) finds unparalleled opportunity in wastewater purification under UV/visible light, largely encouraged by their divergent admirable features like stability, non-toxicity, ease of preparation, suitable band edge positions and facile generation of active oxygen species in the aqueous medium. However, the perennial failings of these photocatalysts emanates from the stumbling blocks like rapid charge carrier recombination and meager visible light response. In this review, tailoring the surface-bulk electronic structure through the calibrated and veritable approaches such as impurity doping, deposition with noble metals, sensitizing with other compounds (dyes, polymers, inorganic complexes and simple chelating ligands), hydrogenation process (annealing under hydrogen atmosphere), electronic integration with other semiconductors, modifying with carbon nanostructures, designing with exposed facets and tailoring with hierarchical morphologies to overcome their critical drawbacks are summarized. Taking into account the materials intrinsic properties, the pros and cons together with similarities and striking differences for each strategy in specific to TiO{sub 2}, WO{sub 3} & ZnO are highlighted. These subtlety enunciates the primacy for improving the structure-electronic properties of metal oxides and credence to its fore in the practical applications. Future research must focus on comparing the performances of ZnO, TiO{sub 2} and WO{sub 3} in parallel to get insight into their photocatalytic behaviors. Such comparisons not only reveal

  12. Hydro- and solvothermally-prepared ZnO and its catalytic effect on photodegradation of reactive orange 16 dye

    Directory of Open Access Journals (Sweden)

    Simović Bojana

    2014-01-01

    Full Text Available In this work, zinc oxide powders were obtained by two different techniques: hydro- and solvothermal synthesis starting from Zn(NO32 and Zn(CH3COO2, respectively. The influence of synthetic procedure on the structural, microstructural, thermal and photocatalytic properties of the prepared ZnO powders was investigated. Both ZnO samples were further annealed at moderate conditions (300°C to avoid grain growth and to remove traces of impurities. In all four cases a single-phase hexagonal ZnO was confirmed by X-ray powder diffraction. The morphology of prepared ZnO powders was different and it varied from rounded nanograins to microrods. All prepared samples showed higher photocatalytic efficiency in degradation of textile azo-dye Reactive Orange 16(RO16 than the commercial ZnO. In addition, the non-annealed samples had better photocatalytic properties than the commercial Degussa P25 TiO2 powder. [Projekat Ministarstva nauke Republike Srbije, br. III45007, br. ON171032 i br. ON172013

  13. Green Synthesized Zinc Oxide (ZnO Nanoparticles Induce Oxidative Stress and DNA Damage in Lathyrus sativus L. Root Bioassay System

    Directory of Open Access Journals (Sweden)

    Kamal K. Panda

    2017-05-01

    Full Text Available Zinc oxide nanoparticles (ZnONP-GS were synthesised from the precursor zinc acetate (Zn(CH3COO2 through the green route using the milky latex from milk weed (Calotropis gigantea L. R. Br by alkaline precipitation. Formation of the ZnONP-GS was monitored by UV-visible spectroscopy followed by characterization and confirmation by energy-dispersive X-ray spectroscopy (EDX, transmission electron microscopy (TEM, and X-ray diffraction (XRD. Both the ZnONP-GS and the commercially available ZnONP-S (Sigma-Aldrich and cationic Zn2+ from Zn(CH3COO2 were tested in a dose range of 0–100 mg·L−1 for their potency (i to induce oxidative stress as measured by the generation reactive oxygen species (ROS: O2•−, H2O2 and •OH, cell death, and lipid peroxidation; (ii to modulate the activities of antioxidant enzymes: catalase (CAT, superoxide dismutase (SOD, guaiacol peroxidase (GPX, and ascorbate peroxidase (APX; and (iii to cause DNA damage as determined by Comet assay in Lathyrus sativus L. root bioassay system. Antioxidants such as Tiron and dimethylthiourea significantly attenuated the ZnONP-induced oxidative and DNA damage, suggesting the involvement of ROS therein. Our study demonstrated that both ZnONP-GS and ZnONP-S induced oxidative stress and DNA damage to a similar extent but were significantly less potent than Zn2+ alone.

  14. Green Synthesized Zinc Oxide (ZnO) Nanoparticles Induce Oxidative Stress and DNA Damage in Lathyrus sativus L. Root Bioassay System.

    Science.gov (United States)

    Panda, Kamal K; Golari, Dambaru; Venugopal, A; Achary, V Mohan M; Phaomei, Ganngam; Parinandi, Narasimham L; Sahu, Hrushi K; Panda, Brahma B

    2017-05-18

    Zinc oxide nanoparticles (ZnONP-GS) were synthesised from the precursor zinc acetate (Zn(CH₃COO)₂) through the green route using the milky latex from milk weed ( Calotropis gigantea L. R. Br) by alkaline precipitation. Formation of the ZnONP-GS was monitored by UV-visible spectroscopy followed by characterization and confirmation by energy-dispersive X-ray spectroscopy (EDX), transmission electron microscopy (TEM), and X-ray diffraction (XRD). Both the ZnONP-GS and the commercially available ZnONP-S (Sigma-Aldrich) and cationic Zn 2+ from Zn(CH₃COO)₂ were tested in a dose range of 0-100 mg·L -1 for their potency (i) to induce oxidative stress as measured by the generation reactive oxygen species (ROS: O₂ •- , H₂O₂ and • OH), cell death, and lipid peroxidation; (ii) to modulate the activities of antioxidant enzymes: catalase (CAT), superoxide dismutase (SOD), guaiacol peroxidase (GPX), and ascorbate peroxidase (APX); and (iii) to cause DNA damage as determined by Comet assay in Lathyrus sativus L. root bioassay system. Antioxidants such as Tiron and dimethylthiourea significantly attenuated the ZnONP-induced oxidative and DNA damage, suggesting the involvement of ROS therein. Our study demonstrated that both ZnONP-GS and ZnONP-S induced oxidative stress and DNA damage to a similar extent but were significantly less potent than Zn 2+ alone.

  15. Reaction kinetics of oxygen on single-phase alloys, oxidation of nickel and niobium alloys

    International Nuclear Information System (INIS)

    Lalauze, Rene

    1973-01-01

    This research thesis first addresses the reaction kinetics of oxygen on alloys. It presents some generalities on heterogeneous reactions (conventional theory, theory of jumps), discusses the core reaction (with the influence of pressure), discusses the influence of metal self-diffusion on metal oxidation kinetics (equilibrium conditions at the interface, hybrid diffusion regime), reports the application of the hybrid diffusion model to the study of selective oxidation of alloys (Wagner model, hybrid diffusion model) and the study of the oxidation kinetics of an alloy forming a solid solution of two oxides. The second part reports the investigation of the oxidation of single phase nickel and niobium alloys (phase α, β and γ)

  16. Power-dependent photocatalytic activity of ZnO

    Energy Technology Data Exchange (ETDEWEB)

    Chun, So Yeon; Han, Noh Soo; Jeong, Seong Hyun; Park, Seung Min; Song, Jae Kyu [Dept. of Chemistry, Kyung Hee University, Seoul (Korea, Republic of); Moon, Cheol Joo; Choi, Myong Yong [Dept. of Chemistry (BK21) and Research Institute of Natural Science, Gyeongsang NationalUniversity, Jinju (Korea, Republic of)

    2017-03-15

    the power-dependent photocatalytic activity of ZnO was examined for the photoreduction processes of Rh101 and AN in the presence of hole scavengers, where the fluorescence spectra were measured as a function of irradiation time and excitation intensity. The concentration of the reactants decreased, while the concentration of the products increased accordingly, which indicated the single-electron reduction process by electrons supplied from the conduction band of ZnO. Despite the single-electron process, the efficiency of the photoreaction depended nonlinearly on the excitation intensity, which was explained by the saturation of defect states in ZnO. The enhanced ratio of available electrons in ZnO led to a superlinear increase in the photoreduction efficiency, while the single-electron process linearly reflected the electrons available in ZnO.

  17. Determination of chemical state of Al doping element in ZnO layer

    International Nuclear Information System (INIS)

    Csik, A.; Toth, J.; Lovics, R.; Takats, V.; Hakl, J.; Vad, K.

    2011-01-01

    Complete text of publication follows. Transparent and conducting oxides (TCO) thin films are very important from the scientific and technological point of view. The coexistence of electrical conductivity and optical transparency in these materials makes it possible to use them in modern technologies: transparent electrodes for flat panel displays and photovoltaic cells, low emissivity windows, transparent thin films transistors, light emitting diodes. One of the important TCO semiconductors is the impurity-doped zinc-oxide (ZnO) layer, for example aluminium doped zinc-oxide layer (AZO), due to its unique physical and chemical properties. It has wide band gap (3.44 eV) and large exciton binding energy (60 meV). ZnO thin layers have a great interest for potential applications in optical and optoelectronic devices. Furthermore, high quality single crystal ZnO wafers has already been available as a result of new developments in ZnO growth technologies with the capability to scale up wafer size, which is an important factor for increasing efficiency of solar cells. Nonetheless, in order to enable the use of ZnO layers with enhanced electrical properties, higher conductivities can be obtained by doping with donor elements such as aluminium, gallium, indium, boron or fluorine. Investigation of p-type doping possibilities, diffusion processes and thermal stability of these layers are in the focus of interest in the interpretation of their optical and electrical properties, and the prediction of their lifetime. In our SNMS/SIMS-XPS laboratory, experiments on TCO layered structures were carried on. Depth profile and chemical state analyses of ZnO/AlO/ZnO layered structures were performed by Secondary Neutral Mass Spectrometry (SNMS) and X-ray photoelectron spectroscopy (XPS). The samples were produced by atomic layer deposition technique with the following layered structure: between a few hundred atomic layers of ZnO was an AlO atomic layer. The SNMS was used for depth

  18. Influence of electron irradiation on hydrothermally grown zinc oxide single crystals

    International Nuclear Information System (INIS)

    Lu, L W; So, C K; Zhu, C Y; Gu, Q L; Fung, S; Ling, C C; Li, C J; Brauer, G; Anwand, W; Skorupa, W

    2008-01-01

    The resistivity of hydrothermally grown ZnO single crystals increased from ∼10 3 Ω cm to ∼10 6 Ω cm after 1.8 MeV electron irradiation with a fluence of ∼10 16 cm −2 , and to ∼10 9 Ω cm as the fluence increased to ∼10 18 cm −2 . Defects in samples were studied by thermally stimulated current (TSC) spectroscopy and positron lifetime spectroscopy (PLS). After the electron irradiation with a fluence of 10 18 cm −2 , the normalized TSC signal increased by a factor of ∼100. A Zn vacancy was also introduced by the electron irradiation, though with a concentration lower than expected. After annealing in air at 400 °C, the resistivity and the deep traps concentrations recovered to the levels of the as-grown sample, and the Zn vacancy was removed

  19. Influence of electron irradiation on hydrothermally grown zinc oxide single crystals

    Science.gov (United States)

    Lu, L. W.; So, C. K.; Zhu, C. Y.; Gu, Q. L.; Li, C. J.; Fung, S.; Brauer, G.; Anwand, W.; Skorupa, W.; Ling, C. C.

    2008-09-01

    The resistivity of hydrothermally grown ZnO single crystals increased from ~103 Ω cm to ~106 Ω cm after 1.8 MeV electron irradiation with a fluence of ~1016 cm-2, and to ~109 Ω cm as the fluence increased to ~1018 cm-2. Defects in samples were studied by thermally stimulated current (TSC) spectroscopy and positron lifetime spectroscopy (PLS). After the electron irradiation with a fluence of 1018 cm-2, the normalized TSC signal increased by a factor of ~100. A Zn vacancy was also introduced by the electron irradiation, though with a concentration lower than expected. After annealing in air at 400 °C, the resistivity and the deep traps concentrations recovered to the levels of the as-grown sample, and the Zn vacancy was removed.

  20. High-Performance Schottky Diode Gas Sensor Based on the Heterojunction of Three-Dimensional Nanohybrids of Reduced Graphene Oxide-Vertical ZnO Nanorods on an AlGaN/GaN Layer.

    Science.gov (United States)

    Minh Triet, Nguyen; Thai Duy, Le; Hwang, Byeong-Ung; Hanif, Adeela; Siddiqui, Saqib; Park, Kyung-Ho; Cho, Chu-Young; Lee, Nae-Eung

    2017-09-13

    A Schottky diode based on a heterojunction of three-dimensional (3D) nanohybrid materials, formed by hybridizing reduced graphene oxide (RGO) with epitaxial vertical zinc oxide nanorods (ZnO NRs) and Al 0.27 GaN 0.73 (∼25 nm)/GaN is presented as a new class of high-performance chemical sensors. The RGO nanosheet layer coated on the ZnO NRs enables the formation of a direct Schottky contact with the AlGaN layer. The sensing results of the Schottky diode with respect to NO 2 , SO 2 , and HCHO gases exhibit high sensitivity (0.88-1.88 ppm -1 ), fast response (∼2 min), and good reproducibility down to 120 ppb concentration levels at room temperature. The sensing mechanism of the Schottky diode can be explained by the effective modulation of the reverse saturation current due to the change in thermionic emission carrier transport caused by ultrasensitive changes in the Schottky barrier of a van der Waals heterostructure between RGO and AlGaN layers upon interaction with gas molecules. Advances in the design of a Schottky diode gas sensor based on the heterojunction of high-mobility two-dimensional electron gas channel and highly responsive 3D-engineered sensing nanomaterials have potential not only for the enhancement of sensitivity and selectivity but also for improving operation capability at room temperature.

  1. Excimer laser processing of ZnO thin films prepared by the sol-gel process

    International Nuclear Information System (INIS)

    Winfield, R.J.; Koh, L.H.K.; O'Brien, Shane; Crean, Gabriel M.

    2007-01-01

    ZnO thin films were prepared on soda-lime glass from a single spin-coating deposition of a sol-gel prepared with anhydrous zinc acetate [Zn(C 2 H 3 O 2 ) 2 ], monoethanolamine [H 2 NC 2 H 4 OH] and isopropanol. The deposited films were dried at 50 and 300 deg. C. X-ray analysis showed that the films were amorphous. Laser annealing was performed using an excimer laser. The laser pulse repetition rate was 25 Hz with a pulse energy of 5.9 mJ, giving a fluence of 225 mJ cm -2 on the ZnO film. Typically, five laser pulses per unit area of the film were used. After laser processing, the hexagonal wurtzite phase of zinc oxide was observed from X-ray diffraction pattern analysis. The thin films had a transparency of greater than 70% in the visible region. The optical band-gap energy was 3.454 eV. Scanning electron microscopy and profilometry analysis highlighted the change in morphology that occurred as a result of laser processing. This comparative study shows that our sol-gel processing route differs significantly from ZnO sol-gel films prepared by conventional furnace annealing which requires temperatures above 450 deg. C for the formation of crystalline ZnO

  2. Single Event Effects (SEE) for Power Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs)

    Science.gov (United States)

    Lauenstein, Jean-Marie

    2011-01-01

    Single-event gate rupture (SEGR) continues to be a key failure mode in power MOSFETs. (1) SEGR is complex, making rate prediction difficult SEGR mechanism has two main components: (1) Oxide damage-- Reduces field required for rupture (2) Epilayer response -- Creates transient high field across the oxide.

  3. Laser induced densification of cerium gadolinium oxide: Application to single-chamber solid oxide fuel cells

    Energy Technology Data Exchange (ETDEWEB)

    Mariño, Mariana [École Nationale Supérieure des Mines, SPIN-EMSE, CNRS: UMR 5307, LGF, F-42023 Saint-Étienne (France); Rieu, Mathilde, E-mail: rieu@emse.fr [École Nationale Supérieure des Mines, SPIN-EMSE, CNRS: UMR 5307, LGF, F-42023 Saint-Étienne (France); Viricelle, Jean-Paul [École Nationale Supérieure des Mines, SPIN-EMSE, CNRS: UMR 5307, LGF, F-42023 Saint-Étienne (France); Garrelie, Florence [Université Jean Monnet, Laboratoire Hubert Curien, CNRS: UMR 5516, 42000 Saint-Etienne (France)

    2016-06-30

    Graphical abstract: - Highlights: • CGO surface densifications were induced by UV and IR laser irradiations. • Grain growth or densified cracked surfaces were observed by SEM. • UV laser treatments allow a decrease of gas permeation through electrolyte layer. • Electrical conductivity of the electrolyte was modified by laser treatments. • Grain growth of electrolyte induced by UV laser improved cell performances. - Abstract: In single-chamber solid oxide fuel cells (SC-SOFC), anode and cathode are placed in a gas chamber where they are exposed to a fuel/air mixture. Similarly to conventional dual-chamber SOFC, the anode and the cathode are separated by an electrolyte. However, as in the SC-SOFC configuration the electrolyte does not play tightness role between compartments, this one can be a porous layer. Nevertheless, it is necessary to have a diffusion barrier to prevent the transportation of hydrogen produced locally at the anode to the cathode that reduces fuel cell performances. This study aims to obtain directly a diffusion barrier through the surface densification of the electrolyte Ce{sub 0.9}Gd{sub 0.1}O{sub 1.95} (CGO) by a laser treatment. KrF excimer laser and Yb fiber laser irradiations were used at different fluences and number of pulses to modify the density of the electrolyte coating. Microstructural characterizations confirmed the modifications on the surface of the electrolyte for appropriate experimental conditions showing either grain growth or densified but cracked surfaces. Gas permeation and electrical conductivities of the modified electrolyte were evaluated. Finally SC-SOFC performances were improved for the cells presenting grain growth at the electrolyte surface.

  4. Correlation among electronegativity, cation polarizability, optical basicity and single bond strength of simple oxides

    Energy Technology Data Exchange (ETDEWEB)

    Dimitrov, Vesselin, E-mail: vesselin@uctm.edu [Department of Silicate Technology, University of Chemical Technology and Metallurgy, 8, Kl. Ohridski Blvd., Sofia 1756 (Bulgaria); Komatsu, Takayuki, E-mail: komatsu@mst.nagaokaut.ac.jp [Department of Materials Science and Technology, Nagaoka University of Technology, 1603-1 Kamitomioka-cho, Nagaoka 940-2188 (Japan)

    2012-12-15

    A suitable relationship between free-cation polarizability and electronegativity of elements in different valence states and with the most common coordination numbers has been searched on the basis of the similarity in physical nature of both quantities. In general, the cation polarizability increases with decreasing element electronegativity. A systematic periodic change in the polarizability against the electronegativity has been observed in the isoelectronic series. It has been found that generally the optical basicity increases and the single bond strength of simple oxides decreases with decreasing the electronegativity. The observed trends have been discussed on the basis of electron donation ability of the oxide ions and type of chemical bonding in simple oxides. - Graphical abstract: This figure shows the single bond strength of simple oxides as a function of element electronegativity. A remarkable correlation exists between these independently obtained quantities. High values of electronegativity correspond to high values of single bond strength and vice versa. It is obvious that the observed trend in this figure is closely related to the type of chemical bonding in corresponding oxide. Highlights: Black-Right-Pointing-Pointer A suitable relationship between free-cation polarizability and electronegativity of elements was searched. Black-Right-Pointing-Pointer The cation polarizability increases with decreasing element electronegativity. Black-Right-Pointing-Pointer The single bond strength of simple oxides decreases with decreasing the electronegativity. Black-Right-Pointing-Pointer The observed trends were discussed on the basis of type of chemical bonding in simple oxides.

  5. Cycling behaviour of sponge-like nanostructured ZnO as thin-film Li-ion battery anodes

    International Nuclear Information System (INIS)

    Garino, Nadia; Lamberti, Andrea; Gazia, Rossana; Chiodoni, Angelica; Gerbaldi, Claudio

    2014-01-01

    Highlights: • Zn is thermally oxidized in ambient air to obtain sponge-like ZnO film. • Polycrystalline, transparent, porous thin film is obtained. • Film exhibits stabile specific capacity (∼300 mAh g −1 ) after prolonged cycling. • Sponge-like ZnO film shows promising prospects as Li-ion battery anode. - Abstract: Single phase wurtzitic porous ZnO thin films are obtained by a simple two-step method, involving the sputtering deposition of a sponge-like metallic Zn layer, followed by a moderately low temperature treatment for the complete zinc oxidation. Thanks to its 3D nanostructuration, the superimposition of small branches able to grow in length almost isotropically and forming a complex topography, sponge-like ZnO can combine the fast transport properties of one dimensional material and the high surface area usually provided by nanocrystalline electrodes. When galvanostatically tested in lithium cell, after the initial decay, it can provide an almost stable specific capacity higher than 50 μAh cm −2 after prolonged cycling at estimated 0.7 C, with very high Coulombic efficiency

  6. Cycling behaviour of sponge-like nanostructured ZnO as thin-film Li-ion battery anodes

    Energy Technology Data Exchange (ETDEWEB)

    Garino, Nadia, E-mail: nadia.garino@iit.it [Center for Space Human Robotics @Polito, Istituto Italiano di Tecnologia, Corso Trento, 21, 10129 Turin (Italy); Lamberti, Andrea; Gazia, Rossana; Chiodoni, Angelica [Center for Space Human Robotics @Polito, Istituto Italiano di Tecnologia, Corso Trento, 21, 10129 Turin (Italy); Gerbaldi, Claudio, E-mail: claudio.gerbaldi@polito.it [Center for Space Human Robotics @Polito, Istituto Italiano di Tecnologia, Corso Trento, 21, 10129 Turin (Italy); GAME Lab, Department of Applied Science and Technology – DISAT, Politecnico di Torino, C.so Duca degli Abruzzi 24, 10129 Turin (Italy)

    2014-12-05

    Highlights: • Zn is thermally oxidized in ambient air to obtain sponge-like ZnO film. • Polycrystalline, transparent, porous thin film is obtained. • Film exhibits stabile specific capacity (∼300 mAh g{sup −1}) after prolonged cycling. • Sponge-like ZnO film shows promising prospects as Li-ion battery anode. - Abstract: Single phase wurtzitic porous ZnO thin films are obtained by a simple two-step method, involving the sputtering deposition of a sponge-like metallic Zn layer, followed by a moderately low temperature treatment for the complete zinc oxidation. Thanks to its 3D nanostructuration, the superimposition of small branches able to grow in length almost isotropically and forming a complex topography, sponge-like ZnO can combine the fast transport properties of one dimensional material and the high surface area usually provided by nanocrystalline electrodes. When galvanostatically tested in lithium cell, after the initial decay, it can provide an almost stable specific capacity higher than 50 μAh cm{sup −2} after prolonged cycling at estimated 0.7 C, with very high Coulombic efficiency.

  7. Photocatalysis and Bandgap Engineering Using ZnO Nanocomposites

    Directory of Open Access Journals (Sweden)

    Muhammad Ali Johar

    2015-01-01

    Full Text Available Nanocomposites have a great potential to work as efficient, multifunctional materials for energy conversion and photoelectrochemical reactions. Nanocomposites may reveal more improved photocatalysis by implying the improvements of their electronic and structural properties than pure photocatalyst. This paper presents the recent work carried out on photoelectrochemical reactions using the composite materials of ZnO with CdS, ZnO with SnO2, ZnO with TiO2, ZnO with Ag2S, and ZnO with graphene and graphene oxide. The photocatalytic efficiency mainly depends upon the light harvesting span of a material, lifetime of photogenerated electron-hole pair, and reactive sites available in the photocatalyst. We reviewed the UV-Vis absorption spectrum of nanocomposite and photodegradation reported by the same material and how photodegradation depends upon the factors described above. Finally the improvement in the absorption band edge of nanocomposite material is discussed.

  8. Single-molecule study of oxidative enzymatic deconstruction of cellulose.

    Science.gov (United States)

    Eibinger, Manuel; Sattelkow, Jürgen; Ganner, Thomas; Plank, Harald; Nidetzky, Bernd

    2017-10-12

    LPMO (lytic polysaccharide monooxygenase) represents a unique paradigm of cellulosic biomass degradation by an oxidative mechanism. Understanding the role of LPMO in deconstructing crystalline cellulose is fundamental to the enzyme's biological function and will help to specify the use of LPMO in biorefinery applications. Here we show with real-time atomic force microscopy that C1 and C4 oxidizing types of LPMO from Neurospora crassa (NcLPMO9F, NcLPMO9C) bind to nanocrystalline cellulose with high preference for the very same substrate surfaces that are also used by a processive cellulase (Trichoderma reesei CBH I) to move along during hydrolytic cellulose degradation. The bound LPMOs, however, are immobile during their adsorbed residence time ( ~ 1.0 min for NcLPMO9F) on cellulose. Treatment with LPMO resulted in fibrillation of crystalline cellulose and strongly ( ≥ 2-fold) enhanced the cellulase adsorption. It also increased enzyme turnover on the cellulose surface, thus boosting the hydrolytic conversion.Understanding the role of enzymes in biomass depolymerization is essential for the development of more efficient biorefineries. Here, the authors show by atomic force microscopy the real-time mechanism of cellulose deconstruction by lytic polysaccharide monooxygenases.

  9. Trioctylphosphine-assisted morphology control of ZnO nanoparticles

    Science.gov (United States)

    Hong, Yun-Kun; Cho, GeonHee; Park, YoonSu; Oh, Soong Ju; Ha, Don-Hyung

    2018-06-01

    This study investigates the morphological change in colloidal ZnO nanoparticles (NPs) synthesized with trioctylphosphine (TOP). The addition of TOP to the synthesis causes an evolution in the shape of ZnO NPs to tadpole-like particles from quasi-spherical particles at 300 °C. The total length of the tadpole-like ZnO NPs can be modified by controlling the molar ratio of TOP to oleylamine (OLAM). The tadpole-like particles are elongated as the concentration of TOP increased but decreased when the addition of TOP is excessive. These tadpole-like ZnO NPs transform to quasi-spherical NPs regardless of the amount of TOP at a reaction time of 3 h at 300 °C. At 200 °C, the effect of TOP on the ZnO NP synthesis differs from that at 300 °C. The ZnO NPs synthesized by controlling the molar ratios of surfactant ligands (TOP:OLAM = 2:100 and 70:100) at 200 °C share similar amorphous structures, while a crystalline ZnO phase is formed when the reaction time is 3 h. X-ray photoelectron spectroscopy analysis shows that TOP influences the oxidation of ZnO and suggests that a combination of OLAM and TOP plays a role in controlling the shape of ZnO NPs. These results provide critical insights to the utilization of TOP for a shape controlling ligand in ZnO NPs and suggest a new route to design oxide NPs.

  10. Electrical characterization of ZnO nanorods

    Energy Technology Data Exchange (ETDEWEB)

    Schlenker, E.; Bakin, A.; Postels, B.; Mofor, A.C.; Wehmann, H.H.; Waag, A. [Institute of Semiconductor Technology, Technical University Braunschweig, Hans-Sommer-Strasse 66, 38106 Braunschweig (Germany); Weimann, T.; Hinze, P. [Physikalisch-Technische Bundesanstalt (PTB), Bundesallee 100, 38116 Braunschweig (Germany)

    2007-05-15

    Zinc oxide (ZnO) nanorods were grown by a wet chemical approach and by vapor phase transport. To explore the electrical properties of individual nanostructures current-voltage (I-V) characteristics were obtained by using an atomic force microscope (AFM) with a conductive tip or by detaching the nanorods from the growth substrate, transferring them to an isolating substrate and contacting them with evaporated Ti/Au electrodes patterned by electron-beam lithography. The AFM-approach only yields a Schottky diode behavior, while the Ti/Au forms ohmic contacts to the ZnO. For the latter method the obtained I-V curves reveal a resistivity of the nanorods in the order of 10{sup -5} {omega} cm which is unusually low for undoped ZnO. We therefore assume the existence of a highly conductive surface channel. (copyright 2007 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  11. The method of local increments for the calculation of adsorption energies of atoms and small molecules on solid surfaces. Part I. A single Cu atom on the polar surfaces of ZnO.

    Science.gov (United States)

    Schmitt, Ilka; Fink, Karin; Staemmler, Volker

    2009-12-21

    The method of local increments is used in connection with the supermolecule approach and an embedded cluster model to calculate the adsorption energy of single Cu atoms at different adsorption sites at the polar surfaces of ZnO. Hartree-Fock calculations for the full system, adsorbed atom and solid surface, and for the fragments are the first step in this approach. In the present study, restricted open-shell Hartree-Fock (ROHF) calculations are performed since the Cu atom possesses a singly-occupied 4s orbital. The occupied Hartree-Fock orbitals are then localized by means of the Foster-Boys localization procedure. The correlation energies are expanded into a series of many-body increments which are evaluated separately and independently. In this way, the very time-consuming treatment of large systems is replaced with a series of much faster calculations for small subunits. In the present application, these subunits consist of the orbitals localized at the different atoms. Three adsorption situations with rather different bonding characteristics have been studied: a Cu atom atop a threefold-coordinated O atom of an embedded Zn(4)O(4) cluster, a Cu atom in an O vacancy site at the O-terminated ZnO(000-1) surface, and a Cu atom in a Zn vacancy site at the Zn-terminated ZnO(0001) surface. The following properties are analyzed in detail: convergence of the many-body expansion, contributions of the different n-body increments to the adsorption energy, treatment of the singly-occupied orbital as "localized" or "delocalized". Big savings in computer time can be achieved by this approach, particularly if only the localized orbitals in the individual increment under consideration are described by a large correlation adapted basis set, while all other orbitals are treated by a medium-size Hartree-Fock-type basis set. In this way, the method of local increments is a powerful alternative to the widely used methods like DFT or RI-MP2.

  12. Simple Response Surface Methodology: Investigation on Advance Photocatalytic Oxidation of 4-Chlorophenoxyacetic Acid Using UV-Active ZnO Photocatalyst.

    Science.gov (United States)

    Lee, Kian Mun; Hamid, Sharifah Bee Abd

    2015-01-19

    The performance of advance photocatalytic degradation of 4-chlorophenoxyacetic acid (4-CPA) strongly depends on photocatalyst dosage, initial concentration and initial pH. In the present study, a simple response surface methodology (RSM) was applied to investigate the interaction between these three independent factors. Thus, the photocatalytic degradation of 4-CPA in aqueous medium assisted by ultraviolet-active ZnO photocatalyst was systematically investigated. This study aims to determine the optimum processing parameters to maximize 4-CPA degradation. Based on the results obtained, it was found that a maximum of 91% of 4-CPA was successfully degraded under optimal conditions (0.02 g ZnO dosage, 20.00 mg/L of 4-CPA and pH 7.71). All the experimental data showed good agreement with the predicted results obtained from statistical analysis.

  13. Photoluminescent ZnO Nanoparticles and Their Biological Applications

    Directory of Open Access Journals (Sweden)

    Zheng-Yong Zhang

    2015-05-01

    Full Text Available During the past decades, numerous achievements concerning luminescent zinc oxide nanoparticles (ZnO NPs have been reported due to their improved luminescence and good biocompatibility. The photoluminescence of ZnO NPs usually contains two parts, the exciton-related ultraviolet (UV emission and the defect-related visible emission. With respect to the visible emission, many routes have been developed to synthesize and functionalize ZnO NPs for the applications in detecting metal ions and biomolecules, biological fluorescence imaging, nonlinear multiphoton imaging, and fluorescence lifetime imaging. As the biological applications of ZnO NPs develop rapidly, the toxicity of ZnO NPs has attracted more and more attention because ZnO can produce the reactive oxygen species (ROS and release Zn2+ ions. Just as a coin has two sides, both the drug delivery and the antibacterial effects of ZnO NPs become attractive at the same time. Hence, in this review, we will focus on the progress in the synthetic methods, luminescent properties, and biological applications of ZnO NPs.

  14. Structural, electrical, and dielectric properties of Cr doped ZnO thin films: Role of Cr concentration

    Energy Technology Data Exchange (ETDEWEB)

    Gürbüz, Osman, E-mail: osgurbuz@yildiz.edu.tr; Okutan, Mustafa

    2016-11-30

    Highlights: • Magnetic material of Cr and semiconductor material of ZnO were grown by the magnetron sputtering co-sputter technique. • Perfect single crystalline structures were grown. • DC and AC conductivity with dielectric properties as a function of frequency (f = 5Hz–13 MHz) at room temperature were measured and compared. • Cr doped ZnO can be used in microwave, sensor and optoelectronic devices as the electrical conductivity increases while dielectric constant decreases with the Cr content. - Abstract: An undoped zinc oxide (ZnO) and different concentrations of chromium (Cr) doped ZnO Cr{sub x}ZnO{sub 1−x} (x = 3.74, 5.67, 8.10, 11.88, and 15.96) thin films were prepared using a magnetron sputtering technique at room temperature. These films were characterized by X-ray diffraction (XRD), High resolution scanning electron microscope (HR-SEM), and Energy dispersive X-ray spectrometry (EDS). XRD patterns of all the films showed that the films possess crystalline structure with preferred orientation along the (100) crystal plane. The average crystallite size obtained was found to be between 95 and 83 nm which was beneficial in high intensity recording peak. Both crystal quality and crystallite sizes decrease with increasing Cr concentration. The crystal and grain sizes of the all film were investigated using SEM analysis. The surface morphology that is grain size changes with increase Cr concentration and small grains coalesce together to form larger grains for the Cr{sub 11.88}ZnO and Cr{sub 15.96}ZnO samples. Impedance spectroscopy studies were carried out in the frequencies ranging from 5 Hz to 13 MHz at room temperature. The undoped ZnO film had the highest dielectric value, while dielectric values of other films decreased as doping concentrations increased. Besides, the dielectric constants decreased whereas the loss tangents increased with increasing Cr content. This was considered to be related to the reduction of grain size as Cr content in ZnO

  15. Oxidation kinetics of a Pb-64 at.% In single-phase alloy

    International Nuclear Information System (INIS)

    Zhang, M.X.; Chang, Y.A.; Marcotte, V.C.

    1991-01-01

    The solid-state oxidation kinetics of a Pb-64 at.% IN(50 wt.%) single-phase alloy were studied from room temperature to 150C using AES (Auger Electron Spectroscopy) depth profiling technique. The general oxidation behavior of this alloy is different from that of a Pb-3 at.% In alloy but similar to that of a Pb-30 at.% In alloy. The oxide formed on this alloy is almost pure In oxide (In 2 O 3 ) with the possible existence of some In suboxide near the oxide/alloy interface. At room temperature, oxidation of the alloy follows a direct logarithmic law, and the results can be described by the model proposed previously by Zhang, Chang, and Marcotte. At temperatures higher than 75C, rapid oxidation occurred initially followed by a slower parabolic oxidation at longer time. These data were described quantitatively by the model which assumes the existence of short-circuit diffusion in addition to lattice diffusion in the oxide as proposed by Smeltzer, Haering, and Kirkaldy. The effects of alloy composition in the oxidation kinetics of (pb, In) alloy are also examined by comparing the data for Pb-3, 30, and 64 at.% In alloys

  16. The thickness of native oxides on aluminum alloys and single crystals

    Energy Technology Data Exchange (ETDEWEB)

    Evertsson, J., E-mail: jonas.evertsson@sljus.lu.se [Division of Synchrotron Radiation Research, Lund University, Box 118, 221 00 Lund (Sweden); Bertram, F. [Division of Synchrotron Radiation Research, Lund University, Box 118, 221 00 Lund (Sweden); Zhang, F. [KTH Royal Institute of Technology, Department of Chemistry, Division of Surface and Corrosion Science, Drottning Kristinas Vg 51, 100 44 Stockholm (Sweden); Rullik, L.; Merte, L.R.; Shipilin, M. [Division of Synchrotron Radiation Research, Lund University, Box 118, 221 00 Lund (Sweden); Soldemo, M.; Ahmadi, S. [KTH Royal Institute of Technology, ICT, Material Physics, 16440 Kista (Sweden); Vinogradov, N.; Carlà, F. [ESRF, B.P. 220, 38043 Grenoble (France); Weissenrieder, J.; Göthelid, M. [KTH Royal Institute of Technology, ICT, Material Physics, 16440 Kista (Sweden); Pan, J. [KTH Royal Institute of Technology, Department of Chemistry, Division of Surface and Corrosion Science, Drottning Kristinas Vg 51, 100 44 Stockholm (Sweden); Mikkelsen, A. [Division of Synchrotron Radiation Research, Lund University, Box 118, 221 00 Lund (Sweden); Nilsson, J.-O. [Sapa Technology, Kanalgatan 1, 612 31 Finspång (Sweden); Lundgren, E. [Division of Synchrotron Radiation Research, Lund University, Box 118, 221 00 Lund (Sweden)

    2015-09-15

    Highlights: • We have determined the native oxide film thickness on several Al samples. • The results obtained from XRR and XPS show excellent agreement. • The results obtained from EIS show consistently thinner oxide films. • The oxides on the alloys are thicker than the oxides on the single crystals. - Abstract: We present results from measurements of the native oxide film thickness on four different industrial aluminum alloys and three different aluminum single crystals. The thicknesses were determined using X-ray reflectivity, X-ray photoelectron spectroscopy, and electrochemical impedance spectroscopy. In addition, atomic force microscopy was used for micro-structural studies of the oxide surfaces. The reflectivity measurements were performed in ultra-high vacuum, vacuum, ambient, nitrogen and liquid water conditions. The results obtained using X-ray reflectivity and X-ray photoelectron spectroscopy demonstrate good agreement. However, the oxide thicknesses determined from the electrochemical impedance spectroscopy show a larger discrepancy from the above two methods. In the present contribution the reasons for this discrepancy are discussed. We also address the effect of the substrate type and the presence of water on the resultant oxide thickness.

  17. Toxicokinetics of zinc oxide nanoparticles in rats

    International Nuclear Information System (INIS)

    Chung, H E; Yu, J; Baek, M; Lee, J A; Choi, S J; Kim, M S; Kim, S H; Maeng, E H; Lee, J K; Jeong, J

    2013-01-01

    Zinc oxide (ZnO) nanoparticle have been extensively applied to diverse industrial fields because they possess UV light absorption, catalytic, semi-conducting, and magnetic characteristics as well as antimicrobial property. However, up to date, toxicological effects of ZnO nanoparticles in animal models have not been completely determined. Moreover, little information is available about kinetic behaviors of ZnO nanoparticles in vivo, which will be crucial to predict their potential chronic toxicity after long-term exposure. The aim of this study was, therefore, to evaluate the pharmacokinetics and toxicokinetics of ZnO nanoparticles after single-dose and repeated dose 90-day oral administration in male and female rats, respectively. The blood samples were collected following administration of three different doses (125, 250, and 500 mg/kg) and ZnO concentration was assessed by measuring zinc level with inductively coupled plasma-atomic emission spectroscopy (ICP-AES). The result showed that the plasma ZnO concentration significantly increased in a dose-dependent manner, but decreased within 24 h after single-dose oral administration up to 500 mg/kg, without any significant difference between gender. However, when repeated dose 90-day oral toxicity study was performed, the elevated plasma concentrations did not return to normal control levels in all the cases, indicating their toxicity potential. These findings suggest that repeated oral exposure to ZnO nanoparticles up to the dose of 125 mg/kg could accumulate in the systemic circulation, thereby implying that the NOAEL values could be less than 125 mg/kg via oral intake.

  18. Positron annihilation spectroscopic study of hydrothermal grown n-type zinc oxide single crystal

    Energy Technology Data Exchange (ETDEWEB)

    Hui, C.W.; Zhang, Z.D.; Zhou, T.J.; Ling, C.C.; Beling, C.D.; Fung, S. [Department of Physics, The University of Hong Kong, Pokfulam Road, Hong Kong (China); Brauer, G.; Anwand, W.; Skorupa, W. [Institut fuer Ionenstrahlphysik und Materialforschung, Forschungszentrum Rossendorf, Postfach 510119, 01314 Dresden (Germany)

    2007-07-01

    Positron lifetime and coincidence Doppler broadening spectroscopic (CDBS) measurements were carried out to study the defects in two hydrothermal (HT) grown ZnO single crystal samples (HT1 and HT2) obtained from two companies. Single component model could offer good fittings to the room temperature spectra of HT1 and HT2, with the positron lifetimes equal to 199 ps and 181 ps respectively. These two lifetime components were associated with saturated positron trapping into two V{sub Zn}-related defects with different microstructures. The positron lifetimes of HT1 was found to be temperature independent. For the HT2 sample, the positron lifetime remained unchanged with T>200 K and decreased with decreasing temperature as T<200 K. This could be explained by the presence of an additional positron trap having similar electronic environment to that of the delocalized state and competing in trapping positrons with the 181 ps component at low temperatures. Positron-electron autocorrelation function, which was the fingerprint of the annihilation site, was extracted from the CDBS spectrum. The obtained autocorrelation functions of HT1 and HT2 at room temperature, and HT2 at 50 K had features consistent with the above postulates that the 181 ps and the 199 ps components had distinct microstructures and the low temperature positron trap existed in HT2. (copyright 2007 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  19. Adsorption of Ca2+ on single layer graphene oxide.

    Science.gov (United States)

    Terracciano, Amalia; Zhang, Jianfeng; Christodoulatos, Christos; Wu, Fengchang; Meng, Xiaoguang

    2017-07-01

    Graphene oxide (GO) holds great promise for a broad array of applications in many fields, but also poses serious potential risks to human health and the environment. In this study, the adsorptive properties of GO toward Ca 2+ and Na + were investigated using batch adsorption experiments, zeta potential measurements, and spectroscopic analysis. When pH increased from 4 to 9, Ca 2+ adsorption by GO and the zeta potential of GO increased significantly. Raman spectra suggest that Ca 2+ was strongly adsorbed on the GO via -COOCa + formation. On the other hand, Na + was adsorbed into the electrical diffuse layer as an inert counterion to increase the diffuse layer zeta potential. While the GO suspension became unstable with increasing pH from 4 to 10 in the presence of Ca 2+ , it was more stable at higher pH in the NaCl solution. The findings of this research provide insights in the adsorption of Ca 2+ on GO and fundamental basis for prediction of its effect on the colloidal stability of GO in the environment. Copyright © 2017. Published by Elsevier B.V.

  20. Application of zinc oxide quantum dots in food safety

    Science.gov (United States)

    Zinc oxide quantum dots (ZnO QDs) are nanoparticles of purified powdered ZnO. The ZnO QDs were directly added into liquid foods or coated on the surface of glass jars using polylactic acid (PLA) as a carrier. The antimicrobial activities of ZnO QDs against Listeria monocytogenes, Salmonella Enteriti...

  1. Photovoltaic Properties of Co-doped ZnO Thin Film on Glass Substrate

    International Nuclear Information System (INIS)

    Sabia Aye; Zin Ma Ma; May Nwe Oo; Than Than Win; Yin Maung Maung; Ko Ko Kyaw Soe

    2011-12-01

    Cobalt (Co) 0.4 mol doped zinc oxide (ZnO) fine powder was prepared by solid state mixed oxide route. Phase formation and crystal structure of Co-doped ZnO (CZO) powder were examined by X-ray diffraction (XRD). Scanning Electron Microscopy (SEM) was used to observe the micro structure of Co doped ZnO powder. Energy Dispersive X-ray Fluorescent (EDXRF) technique gave the elemental content of cobalt and zinc. Co-doped ZnO film was formed on glass substrate by spin coating technique. Photovoltaic properties of CZO/glass cell were measured.

  2. Performance of Cr-doped ZnO for acetone sensing

    Energy Technology Data Exchange (ETDEWEB)

    Al-Hardan, N.H., E-mail: naif_imen@ukm.my [Institute of Microengineering and Nanoelectronics (IMEN), Universiti Kebangsaan Malaysia, 43600 Bangi, Selangor (Malaysia); Abdullah, M.J.; Aziz, A. Abdul [School of Physics, Universiti Sains Malaysia, 11800 USM, Penang (Malaysia)

    2013-04-01

    Zinc oxide (ZnO) doped with chromium (Cr) was synthesized by reactive co-sputtering for gas sensing applications. The effect of varying the contents of Cr (from 1 to 4 at%) on the ZnO gas sensor response was studied. X-ray diffraction analysis reveals the high orientation of c-axis of the prepared films. The optimum operating temperature of the undoped ZnO was 400 °C and shifted to 300 °C for the Cr-doped ZnO under the acetone vapour. The 1% Cr doping ZnO gas sensor was most sensitive for the acetone vapour. The ability of the 1% Cr-doped ZnO to produce repeatable results under different acetone vapour concentrations was tested. The timing properties of the doped Cr ZnO gas sensor were 70 and 95 s for the rise and recovery time respectively.

  3. Controllable synthesis of periodic flower-like ZnO nanostructures on Si subwavelength grating structures

    International Nuclear Information System (INIS)

    Ko, Yeong Hwan; Leem, Jung Woo; Yu, Jae Su

    2011-01-01

    We report on the periodic well-defined flower-like zinc oxide (ZnO) nanostructures (NSs) self-assembled through a simple hydrothermal method using silicon (Si) subwavelength grating (SWG) structures. The Si SWGs serve as building blocks for constructing a two-dimensional (2D) periodic architecture to integrate the one-dimensional (1D) ZnO NSs. Various controlled morphologies of ZnO NSs with high crystallinity are obtained by changing the growth conditions. For 1D ZnO NSs integrated on periodic hexagonal Si SWG structures, the reflection characteristics are investigated in comparison with the conventional ZnO nanorod (NR) arrays. For a three-dimensional (3D) flower-like ZnO NS on Si SWGs, a relatively low total reflectance of < 8% at wavelengths of 300-1050 nm is achieved compared to the ZnO NRs on Si substrate.

  4. Detection of Defect-Induced Magnetism in Low-Dimensional ZnO Structures by Magnetophotocurrent.

    Science.gov (United States)

    Lorite, Israel; Kumar, Yogesh; Esquinazi, Pablo; Zandalazini, Carlos; de Heluani, Silvia Perez

    2015-09-09

    The detection of defect-induced magnetic order in single low-dimensional oxide structures is in general difficult because of the relatively small yield of magnetically ordered regions. In this work, the effect of an external magnetic field on the transient photocurrent measured after light irradiation on different ZnO samples at room temperature is studied. It has been found that a magnetic field produces a change in the relaxation rate of the transient photocurrent only in magnetically ordered ZnO samples. This rate can decrease or increase with field, depending on whether the magnetically ordered region is in the bulk or only at the surface of the ZnO sample. The phenomenon reported here is of importance for the development of magneto-optical low-dimensional oxides devices and provides a new guideline for the detection of magnetic order in low-dimensional magnetic semiconductors. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  5. Impact of acid and oxidative modifications, single or dual, of sorghum starch on biodegradable films.

    Science.gov (United States)

    Biduski, Bárbara; Silva, Francine Tavares da; Silva, Wyller Max da; Halal, Shanise Lisie de Mello El; Pinto, Vania Zanella; Dias, Alvaro Renato Guerra; Zavareze, Elessandra da Rosa

    2017-01-01

    The objective of this study was to evaluate the effects of acid and oxidation modifications on sorghum starch, as well as the effect of dual modification of starch on the physical, morphological, mechanical, and barrier properties of biodegradable films. The acid modification was performed with 3% lactic acid and the oxidation was performed with 1.5% active chlorine. For dual modification, the acid modification was performed first, followed by oxidation under the same conditions as above. Both films of the oxidized starches, single and dual, had increased stiffness, providing a higher tensile strength and lower elongation when compared to films based on native and single acid modified starches. However, the dual modification increased the water vapor permeability of the films without changing their solubility. The increase in sorghum starch concentration in the filmogenic solution increased the thickness, water vapor permeability, and elongation of the films. Copyright © 2016. Published by Elsevier Ltd.

  6. Role of oxygen on the optical properties of borate glass doped with ZnO

    International Nuclear Information System (INIS)

    Abdel-Baki, Manal; El-Diasty, Fouad

    2011-01-01

    Lithium tungsten borate glass (0.56-x)B 2 O 3 -0.4Li 2 O-xZnO-0.04WO 3 (0≤x≤0.1 mol%) is prepared by the melt quenching technique for photonic applications. Small relative values of ZnO are used to improve the glass optical dispersion and to probe as well the role of oxygen electronic polarizability on its optical characteristics. The spectroscopic properties of the glass are determined in a wide spectrum range (200-2500 nm) using a Fresnel-based spectrophotometric technique. Based on the Lorentz-Lorenz theory, as ZnO content increases on the expense of B 2 O 3 the glass molar polarizability increased due to an enhanced unshared oxide ion 2p electron density, which increases ionicity of the chemical bonds of glass. The role of oxide ion polarizability is explained in accordance with advanced measures and theories such as optical basicity, O 1s binding energy, the outer most cation binding energy in Yamashita-Kurosawa's interionic interaction parameter and Sun's average single bond strength. FT-IR measurements confirm an increase in bridging oxygen bonds, as a result of replacement of ZnO by B 2 O 3 , which increase the UV glass transmission window and transmittance. - Graphical abstract: O1s, Yamashita-Kurosawa's parameter and average single bond strength of charge overlapping between electronic shells are used to explain enhanced oxide ion 2p electron density, which increases refractive index of glasses. Highlights: → New borate glass for photonic application is prepared. → The dispersion property of the glass is effectively controlled using small amounts of ZnO. → ZnO is used to probe the glass structure and investigate the role of oxygen on the obtained optical properties of the glasses. → Modern theories are used to explain enhanced unshared oxide ion 2p electron density, which increases ionicity of chemical bonds of the glass.

  7. Effects of Chromium Dopant on Ultraviolet Photoresponsivity of ZnO Nanorods

    Science.gov (United States)

    Mokhtari, S.; Safa, S.; Khayatian, A.; Azimirad, R.

    2017-07-01

    Structural and optical properties of bare ZnO nanorods, ZnO-encapsulated ZnO nanorods, and Cr-doped ZnO-encapsulated ZnO nanorods have been investigated. Encapsulated ZnO nanorods were grown using a simple two-stage method in which ZnO nanorods were first grown on a glass substrate directly from a hydrothermal bath, then encapsulated with a thin layer of Cr-doped ZnO by dip coating. Comparative study of x-ray diffraction patterns showed that Cr was successfully incorporated into the shell layer of ZnO nanorods. Moreover, energy-dispersive x-ray spectroscopy confirmed presence of Cr in this sample. It was observed that the thickness of the shell layer around the core of the ZnO nanorods was at least about 20 nm. Transmission electron microscopy of bare ZnO nanorods revealed single-crystalline structure. Based on optical results, both the encapsulation process and addition of Cr dopant decreased the optical bandgap of the samples. Indeed, the optical bandgap values of Cr-doped ZnO-encapsulated ZnO nanorods, ZnO-encapsulated ZnO nanorods, and bare ZnO nanorods were 2.89 eV, 3.15 eV, and 3.34 eV, respectively. The ultraviolet (UV) parameters demonstrated that incorporation of Cr dopant into the shell layer of ZnO nanorods considerably facilitated formation and transportation of photogenerated carriers, optimizing their performance as a practical UV detector. As a result, the photocurrent of the Cr-doped ZnO-encapsulated ZnO nanorods was the highest (0.6 mA), compared with ZnO-encapsulated ZnO nanorods and bare ZnO nanorods (0.21 mA and 0.06 mA, respectively).

  8. Evidence for Single Metal Two Electron Oxidative Addition and Reductive Elimination at Uranium

    OpenAIRE

    Gardner, Benedict M; Kefalidis, Christos E; Lu, Erli; Patel, Dipti; Mcinnes, Eric; Tuna, Floriana; Wooles, Ashley; Maron, Laurent; Liddle, Stephen

    2017-01-01

    Reversible single-metal two-electron oxidative addition and reductive elimination are common fundamental reactions for transition metals that underpin major catalytic transformations. However, these reactions have never been observed together in the f-block because these metals exhibit irreversible one- or multi-electron oxidation or reduction reactions. Here, we report that azobenzene oxidises sterically and electronically unsaturated uranium(III) complexes to afford a uranium(V)-imido compl...

  9. Hierarchical structures of ZnO spherical particles synthesized solvothermally

    Science.gov (United States)

    Saito, Noriko; Haneda, Hajime

    2011-12-01

    We review the solvothermal synthesis, using a mixture of ethylene glycol (EG) and water as the solvent, of zinc oxide (ZnO) particles having spherical and flower-like shapes and hierarchical nanostructures. The preparation conditions of the ZnO particles and the microscopic characterization of the morphology are summarized. We found the following three effects of the ratio of EG to water on the formation of hierarchical structures: (i) EG restricts the growth of ZnO microcrystals, (ii) EG promotes the self-assembly of small crystallites into spheroidal particles and (iii) the high water content of EG results in hollow spheres.

  10. Enhanced antimicrobial activity in biosynthesized ZnO nanoparticles

    Science.gov (United States)

    Kumari, Niraj; Kumari, Priti; Jha, Anal K.; Prasad, K.

    2018-05-01

    Biological synthesis of different metallic and/or oxide nanoparticles and their applications especially in agriculture and biomedical sciences are gaining prominence nowadays due to their handy and reproducible synthetic protocols which are cost-effective and eco-friendly. In this work, green synthesis of zinc oxide nanoparticles (ZnO NPs) using the alcoholic extract of Azadirachta indica as a reducing and stabilizing agent has been presented. Formation of ZnO NPs was confirmed by X-ray diffraction, scanning and transmission electron microscopy techniques. The phytochemicals responsible for nano-transformation were principally alkaloids, flavanoids, terpenoids, tannins and organic acids present in the Azadirachta indica leaves. The synthesized ZnO NPs were used for antimicrobial assays by disc diffusion method against Staphylococcus aureus and Candida albicans. Results showed that ZnO NPs may act as antimicrobial agent especially against skin infections.

  11. Subattoampere current induced by single ions in silicon oxide layers of nonvolatile memory cells

    International Nuclear Information System (INIS)

    Cellere, G.; Paccagnella, A.; Larcher, L.; Visconti, A.; Bonanomi, M.

    2006-01-01

    A single ion impinging on a thin silicon dioxide layer generates a number of electron/hole pairs proportional to its linear energy transfer coefficient. Defects generated by recombination can act as a conductive path for electrons that cross the oxide barrier, thanks to a multitrap-assisted mechanism. We present data on the dependence of this phenomenon on the oxide thickness by using floating gate memory arrays. The tiny number of excess electrons stored in these devices allows for extremely high sensitivity, impossible with any direct measurement of oxide leakage current. Results are of particular interest for next generation devices

  12. Structure and photoluminescence properties of Ag-coated ZnO nano-needles

    Energy Technology Data Exchange (ETDEWEB)

    Li Xiaozhu, E-mail: Lixiaozhu1019@21cn.com [Department of Physics, Shaoguan University, Shaoguan, Guangdong 512005 (China) and Department of Physics and Key Laboratory of Acoustic and Photonic Materials and Devices of Ministry of Education, Wuhan University, Wuhan, Hubei 430072 (China); Wang Yongqian [Engineering Research Center of Nano-Geomaterials of Ministry of Education (China University of Geosciences), Wuhan, Hubei 430074 (China)

    2011-05-12

    Highlights: > ZnO nano-needles were synthesized by thermal oxidation. > Their surfaces were coated with Ag by pulse electro-deposition technique. > The uncoated and coated ZnO nano-needles were characterized. > The results showed that the prepared ZnO nano-needles have been coated with Ag successfully. > The photoluminescence spectrums of ZnO nano-needles with Ag-coated and uncoated were analyzed, finding that the Ag-coated ZnO nano-needles can increase the absorption of UV light. - Abstract: A large number of zinc oxide (ZnO) nano-needles were synthesized by thermal oxidation of pure zinc. The surfaces of ZnO nano-needles were coated with a layer of Ag by pulse electro-deposition technique. The uncoated and coated ZnO nano-needles were characterized by using the X-ray diffraction and the scanning electron microscope (SEM). The results showed that the uncoated samples were close-packed hexagonal structure, which showed needle-like morphology. Their average diameter is about 40 nm, lengths up to 5 {mu}m. At the same time we observed that the prepared ZnO nano-needles have been coated with Ag successfully. The photoluminescence spectrums of ZnO nano-needles with Ag-coated and uncoated were analyzed, finding that the uncoated ZnO nano-needles have two fluorescence peaks at 388 nm and 470.8 nm, respectively, the relative intensity of 143.4 and 93.61; and the Ag-coated ZnO nano-needles showed a pair of strong peaks at 387.4 nm and 405.2 nm, the relative intensity of 1366 and 1305, respectively, indicating that the Ag-coated ZnO nano-needles can increase the absorption of UV light.

  13. Structure and photoluminescence properties of Ag-coated ZnO nano-needles

    International Nuclear Information System (INIS)

    Li Xiaozhu; Wang Yongqian

    2011-01-01

    Highlights: → ZnO nano-needles were synthesized by thermal oxidation. → Their surfaces were coated with Ag by pulse electro-deposition technique. → The uncoated and coated ZnO nano-needles were characterized. → The results showed that the prepared ZnO nano-needles have been coated with Ag successfully. → The photoluminescence spectrums of ZnO nano-needles with Ag-coated and uncoated were analyzed, finding that the Ag-coated ZnO nano-needles can increase the absorption of UV light. - Abstract: A large number of zinc oxide (ZnO) nano-needles were synthesized by thermal oxidation of pure zinc. The surfaces of ZnO nano-needles were coated with a layer of Ag by pulse electro-deposition technique. The uncoated and coated ZnO nano-needles were characterized by using the X-ray diffraction and the scanning electron microscope (SEM). The results showed that the uncoated samples were close-packed hexagonal structure, which showed needle-like morphology. Their average diameter is about 40 nm, lengths up to 5 μm. At the same time we observed that the prepared ZnO nano-needles have been coated with Ag successfully. The photoluminescence spectrums of ZnO nano-needles with Ag-coated and uncoated were analyzed, finding that the uncoated ZnO nano-needles have two fluorescence peaks at 388 nm and 470.8 nm, respectively, the relative intensity of 143.4 and 93.61; and the Ag-coated ZnO nano-needles showed a pair of strong peaks at 387.4 nm and 405.2 nm, the relative intensity of 1366 and 1305, respectively, indicating that the Ag-coated ZnO nano-needles can increase the absorption of UV light.

  14. Photoluminescence measurements of ZnO heterostructures

    International Nuclear Information System (INIS)

    Adachi, Yutaka; Sakaguchi, Isao; Ohashi, Naoki; Haneda, Hajime; Ryoken, Haruki; Takenaka, Tadashi

    2003-01-01

    ZnO thin films were grown on TbAlO 3 single crystal substrates by pulsed laser deposition. In photoluminescence (PL) measurements, strong emissions from TbAlO 3 were observed with the emission from ZnO when the film thickness was less than 100 nm. The relationship between the ZnO film thickness and the emission intensity from TbAlO 3 was investigated in order to determine the penetration depth of excitation light. Information on the heterostructures ranging from the surface to a depth of 300 nm was obtained by PL measurements in this study, and the absorption coefficient for a wavelength of 325 nm was estimated to be 1.31x10 5 cm -1 . (author)

  15. Title: Using Alignment and 2D Network Simulations to Study Charge Transport Through Doped ZnO Nanowire Thin Film Electrodes

    KAUST Repository

    Phadke, Sujay

    2011-09-30

    Factors affecting charge transport through ZnO nanowire mat films were studied by aligning ZnO nanowires on substrates and coupling experimental measurements with 2D nanowire network simulations. Gallium doped ZnO nanowires were aligned on thermally oxidized silicon wafer by shearing a nanowire dispersion in ethanol. Sheet resistances of nanowire thin films that had current flowing parallel to nanowire alignment direction were compared to thin films that had current flowing perpendicular to nanowire alignment direction. Perpendicular devices showed ∼5 fold greater sheet resistance than parallel devices supporting the hypothesis that aligning nanowires would increase conductivity of ZnO nanowire electrodes. 2-D nanowire network simulations of thin films showed that the device sheet resistance was dominated by inter-wire contact resistance. For a given resistivity of ZnO nanowires, the thin film electrodes would have the lowest possible sheet resistance if the inter-wire contact resistance was one order of magnitude lower than the single nanowire resistance. Simulations suggest that the conductivity of such thin film devices could be further enhanced by using longer nanowires. Solution processed Gallium doped ZnO nanowires are aligned on substrates using an innovative shear coating technique. Nanowire alignment has shown improvement in ZnO nanowire transparent electrode conductivity. 2D network simulations in conjunction with electrical measurements have revealed different regimes of operation of nanowire thin films and provided a guideline for improving electrical performance of nanowire electrodes. Copyright © 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  16. Blue-emitting photoluminescence of rod-like and needle-like ZnO nanostructures formed by hot-water treatment of sol–gel derived coatings

    Energy Technology Data Exchange (ETDEWEB)

    Tan, Wai Kian, E-mail: tanwaikian@cie.ignite.tut.ac.jp [Center for International Education, Toyohashi University of Technology, Aichi, Toyohashi 441-8580 (Japan); Kawamura, Go; Muto, Hiroyuki [Department of Electrical and Electronic Information Engineering, Toyohashi University of Technology, Aichi, Toyohashi 441-8580 (Japan); Abdul Razak, Khairunisak; Lockman, Zainovia [School of Materials and Mineral Resources, Universiti Sains Malaysia, Engineering Campus, Nibong Tebal, Pulau Pinang 14300 Malaysia (Malaysia); Matsuda, Atsunori, E-mail: matsuda@tut.ee.ac.jp [Center for International Education, Toyohashi University of Technology, Aichi, Toyohashi 441-8580 (Japan); Department of Electrical and Electronic Information Engineering, Toyohashi University of Technology, Aichi, Toyohashi 441-8580 (Japan)

    2015-02-15

    The morphological evolution of the zinc oxide (ZnO) nanostructures generated by hot-water treatment (HWT) of sol–gel derived coatings as a function of temperature from 30 to 90 °C was investigated. With increasing HWT temperature, the ZnO crystals evolved from nanoparticles to rod-like and needle-like nanostructures. High-resolution transmission electron microscope observations of rod-like and needle-like nanostructures generated at 60 and 90 °C indicated single crystal ZnO wurtzite structure was obtained. All the hot-water treated samples exhibited blue emission at approximately 440 nm in room temperature. The intensity of blue emission increased with higher HWT temperatures. The unique photoluminescence emission characteristic remained even after heat-treatment at 400 °C for 1 h. As the emission peak obtained in our work is approximately 440 nm (2.82 eV), the emission peak is corresponding to the electron transition from the interstitial Zn to the top of valence band. This facile formation of blue-emitting ZnO nanostructures at low-temperature can be utilized on substrate with low thermal stability for optoelectronic applications such as light emitting devices and biological fluorescence labeling. - Highlights: • Facile and novel formation of ZnO nanostructures by low temperature hot-water treatment. • No catalyst or inhibitor is used. • Evolution of ZnO nanostructures formation as a function of temperature is reported. • Dominant blue emissions are observed from the as-formed and annealed ZnO films. • Ultraviolet and visible emissions are observed for hot-water treated films.

  17. Atomic layer deposition of B-doped ZnO using triisopropyl borate as the boron precursor and comparison with Al-doped ZnO

    NARCIS (Netherlands)

    Garcia - Alonso, D.; Potts, S.E.; Helvoirt, van C.A.A.; Verheijen, M.A.; Kessels, W.M.M.

    2015-01-01

    Doped ZnO films are an important class of transparent conductive oxides, with many applications demanding increased growth control and low deposition temperatures. Therefore, the preparation of B-doped ZnO films by atomic layer deposition (ALD) at 150 °C was studied. The B source was triisopropyl

  18. Transient behaviors of ZnO thin films on a transparent, flexible polyethylene terephthalate substrate

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Yong Jun [Department of Nano-Physics, Gachon University, 1342 Seongnamdaero, Sujeong-gu, Seongnam-si, Gyeonggi-do 461-701 (Korea, Republic of); Lee, Ho Seok [Department of Materials Science and Engineering, Korea University, 5-1 Anam-dong, Seongbuk-gu, Seoul 136-713 (Korea, Republic of); Noh, Jin-Seo, E-mail: jinseonoh@gachon.ac.kr [Department of Nano-Physics, Gachon University, 1342 Seongnamdaero, Sujeong-gu, Seongnam-si, Gyeonggi-do 461-701 (Korea, Republic of)

    2016-03-31

    Thickness-dependent electrical, structural, and optical properties of zinc oxide (ZnO) thin films on polyethylene terephthalate (PET) substrates have been investigated in the very thin thickness range of 20 to 120 nm. In this thickness range, the electrical resistance of ZnO film increased with an increase in film thickness. This unusual transition behavior was explained in terms of structural evolution from Zn-phase-incorporating non-crystalline ZnO to hexagonal-structured ZnO. A critical thickness for the full development of hexagonal ZnO crystal was estimated at approximately 80 nm in this study. ZnO thin films on PET substrates exhibit a high optical transmittance of > 70% and good endurance to bending cycles over the measured thickness range. The results of this study indicate that a trade-off should be sought between structural, electrical, optical, and mechanical properties for practical applications of very thin ZnO films on organic substrates. - Highlights: • Very thin ZnO films were sputter-deposited on the PET substrate. • The ZnO film resistance increases with an increase in film thickness until saturation. • Hexagonal crystal structures gradually develop with increasing film thickness. • A Zn phase appears in a 20-nm-thick ZnO film. • ZnO films show high optical transmittance of > 80% and good endurance to bending.

  19. Transient behaviors of ZnO thin films on a transparent, flexible polyethylene terephthalate substrate

    International Nuclear Information System (INIS)

    Kim, Yong Jun; Lee, Ho Seok; Noh, Jin-Seo

    2016-01-01

    Thickness-dependent electrical, structural, and optical properties of zinc oxide (ZnO) thin films on polyethylene terephthalate (PET) substrates have been investigated in the very thin thickness range of 20 to 120 nm. In this thickness range, the electrical resistance of ZnO film increased with an increase in film thickness. This unusual transition behavior was explained in terms of structural evolution from Zn-phase-incorporating non-crystalline ZnO to hexagonal-structured ZnO. A critical thickness for the full development of hexagonal ZnO crystal was estimated at approximately 80 nm in this study. ZnO thin films on PET substrates exhibit a high optical transmittance of > 70% and good endurance to bending cycles over the measured thickness range. The results of this study indicate that a trade-off should be sought between structural, electrical, optical, and mechanical properties for practical applications of very thin ZnO films on organic substrates. - Highlights: • Very thin ZnO films were sputter-deposited on the PET substrate. • The ZnO film resistance increases with an increase in film thickness until saturation. • Hexagonal crystal structures gradually develop with increasing film thickness. • A Zn phase appears in a 20-nm-thick ZnO film. • ZnO films show high optical transmittance of > 80% and good endurance to bending.

  20. Growth and luminescence characterization of large-scale zinc oxide nanowires

    CERN Document Server

    Dai, L; Wang, W J; Zhou, T; Hu, B Q

    2003-01-01

    Large-scale zinc oxide (ZnO) nanowires were grown via a simple chemical reaction involving water vapour. Electron microscopy observations reveal that the ZnO nanowires are single crystalline and grow along the c-axis ([001]) direction. Room temperature photoluminescence measurements show a striking blue emission at 466 nm along with two other emissions in the ultraviolet and yellow regions. Annealing treatment of the as-grown ZnO nanowires results in an apparent reduction of the intensity of the blue emission, which indicates that the blue emission might be originating from the oxygen or zinc defects generated in the process of growth of the ZnO nanowires.

  1. Editorial: dose-dependent ZnO particle-induced acute phase response in humans warrants re-evaluation of occupational exposure limits for metal oxides

    DEFF Research Database (Denmark)

    Vogel, Ulla Birgitte; Cassee, Flemming R.

    2018-01-01

    in autonomic imbalance and particle-induced pulmonary inflammation and acute phase response.The acute phase response is the systemic response to acute and chronic inflammatory states caused by for example bacterial infection, virus infection, trauma and infarction. It is characterized by differential...... studies and SAA has been causally related to the formation of plaques in the aorta in animal studies.In a recent paper in Particle and Fibre Toxicology, Christian Monse et al. provide evidence that inhalation of ZnO nanoparticles induces dose-dependent acute phase response in humans at dose levels well...

  2. Optical properties of oxide magnetic ZnO, Zn{sub 0.95}Mn{sub 0.05}O and Cu{sub 2}O nanopowders

    Energy Technology Data Exchange (ETDEWEB)

    Sokolov, V.I., E-mail: visokolov@imp.uran.r [Institute of Metal Physics UD RAS, S.Kovalevskaya Str. 18, 620041 Yekaterinburg (Russian Federation); Yermakov, A.Ye.; Uimin, M.A.; Mysik, A.A. [Institute of Metal Physics UD RAS, S.Kovalevskaya Str. 18, 620041 Yekaterinburg (Russian Federation); Pustovarov, V.A. [Ural State Technical University, Mira Street 19, 620002 Yekaterinburg (Russian Federation); Chukichev, M.V. [M.V. Lomonosov Moscow State University, Physics Faculty, 119991 Moscow (Russian Federation); Gruzdev, N.B. [Institute of Metal Physics UD RAS, S.Kovalevskaya Str. 18, 620041 Yekaterinburg (Russian Federation)

    2009-12-15

    ZnO, Zn{sub 0.95}Mn{sub 0.05}O and Cu{sub 2}O nanocrystals are synthesized. Excitonic lines in absorption spectra of these materials are detected. In photoluminescence and photoluminescence excitation spectra of Zn{sub 0.95}Mn{sub 0.05}O the dangling bond hybrid (DBH) state is found. It has splitted out from the top of the valence band due to the hybridization between d-states of the Mn impurity and the p-states of oxygen.

  3. Growth Stresses in Thermally Grown Oxides on Nickel-Based Single-Crystal Alloys

    Science.gov (United States)

    Rettberg, Luke H.; Laux, Britta; He, Ming Y.; Hovis, David; Heuer, Arthur H.; Pollock, Tresa M.

    2016-03-01

    Growth stresses that develop in α-Al2O3 scale that form during isothermal oxidation of three Ni-based single crystal alloys have been studied to elucidate their role in coating and substrate degradation at elevated temperatures. Piezospectroscopy measurements at room temperature indicate large room temperature compressive stresses in the oxides formed at 1255 K or 1366 K (982 °C or 1093 °C) on the alloys, ranging from a high of 4.8 GPa for René N4 at 1366 K (1093 °C) to a low of 3.8 GPa for René N5 at 1255 K (982 °C). Finite element modeling of each of these systems to account for differences in coefficients of thermal expansion of the oxide and substrate indicates growth strains in the range from 0.21 to 0.44 pct at the oxidation temperature, which is an order of magnitude higher than the growth strains measured in the oxides on intermetallic coatings that are typically applied to these superalloys. The magnitudes of the growth strains do not scale with the parabolic oxidation rate constants measured for the alloys. Significant spatial inhomogeneities in the growth stresses were observed, due to (i) the presence of dendritic segregation and (ii) large carbides in the material that locally disrupts the structure of the oxide scale. The implications of these observations for failure during cyclic oxidation, fatigue cycling, and alloy design are considered.

  4. Single Whole-Body Cryostimulation Procedure versus Single Dry Sauna Bath: Comparison of Oxidative Impact on Healthy Male Volunteers

    Directory of Open Access Journals (Sweden)

    Paweł Sutkowy

    2015-01-01

    Full Text Available Exposure to extreme heat and cold is one of the environmental factors whose action is precisely based on the mechanisms involving free radicals. Fluctuations in ambient temperature are among the agents that toughen the human organism. The goal of the study was to evaluate the impact of extremely high (dry sauna, DS and low (whole-body cryostimulation, WBC environmental temperatures on the oxidant-antioxidant equilibrium in the blood of healthy male subjects. The subjects performed a single DS bath (n=10; 26.2 ± 4.6 years and a single WBC procedure (n=15; 27.5 ± 3.1 years. In the subjects’ blood taken immediately before and 20 min after the interventions, the activity of superoxide dismutase (SOD, catalase (CAT, and glutathione peroxidase (GPx and the concentration of thiobarbituric acid reactive substances in erythrocytes (TBARSer and blood plasma (TBARSpl were determined. Single WBC and DS procedures induced an increase in the activity of SOD and GPx, as well as SOD and CAT, respectively. The SOD activity was higher after WBC than after DS. Extremely high and low temperatures probably induce the formation of reactive oxygen species in the organisms of healthy men and, therefore, disturb the oxidant-antioxidant balance.

  5. Effects of seed layers on controlling of the morphology of ZnO nanostructures and superhydrophobicity of ZnO nanostructure/stearic acid composite films

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, Jing; Liu, Zhihua, E-mail: sdwfliu@163.com; Liu, Junqi; E, Lei; Liu, Zhifeng, E-mail: tjulzf@163.com

    2016-11-01

    Hydrophobic ZnO self-cleaning thin films with the nanobundles and nanocarpets structures fabricated on indium tin oxides (ITO) glass substrate are reported. The water contact angle of ZnO nanobundles and nanocarpets structures (79° and 67° respectively) is higher than that of unmodified ZnO nanorods. A subsequent chemical treatment with stearic acid (SA) contributed to a superhydrophobic surface with a water contact angle of 159°. Its superhydrophobic property is originated from the nanobundles or nanocarpets structures and surface energy of SA/ZnO nanobundles and SA/ZnO nanocarpets composite nanostructures. Moreover, this promising ZnO nanostructured materials show an important application in self-cleaning smart coatings. - Highlights: • PEG and CTAB are firstly introduced to modify the morphology of ZnO seed layers. • ZnO nanobundles and nanocarpets obtained from different seed layers. • Superhydrophobic surfaces obtained by chemcial treatment using SA.

  6. Photoelectrocatrocatalytic hydrolysis of starch by using sprayed ZnO thin films

    Science.gov (United States)

    Sapkal, R. T.; Shinde, S. S.; Rajpure, K. Y.; Bhosale, C. H.

    2013-05-01

    Thin films of zinc oxide have been deposited onto glass/FTO substrates at optimized 400 °C by using a chemical spray pyrolysis technique. Deposited films are character photocatalytic activity by using XRD, an SEM, a UV-vis spectrophotometer, and a PEC single-cell reactor. Films are polycrystalline and have a hexagonal (wurtzite) crystal structure with c-axis (002) orientation growth perpendicular to the substrate surface. The observed direct band gap is about 3.22 eV for typical films prepared at 400 °C. The photocatalytic activity of starch with a ZnO photocatalyst has been studied by using a novel photoelectrocatalytic process.

  7. Uniform distribution of ZnO nanoparticles on the surface of grpahene and its enhanced photocatalytic performance

    Science.gov (United States)

    Xue, Bing; Zou, Yingquan

    2018-05-01

    Herein, a ZnO-graphene nanocomposite photocatalyst was obtained by a facile one-step photochemical method. Both the reduction of graphene oxide (GO) and uniform loading of ZnO nanoparticles (NPs) on the surface of graphene were achieved during the photochemical reaction process using GO as the precursor of graphene and zinc chloride (ZnCl2) as the single source of ZnO. The products were characterized by X-ray diffraction, Fourier transform infrared spectroscopy, Raman spectroscopy, X-ray photoelectron spectroscopy, scanning electron microscopy, transmission electron microscopy, and ultraviolet-visible spectroscopy. The photocatalytic activity of ZnO/rGO composites was studied by the photodegradation of methylene blue (MB) dye. The as-prepared ZnO/rGO photocatalyst possesses great adsorptivity of dyes (e.g., MB) and high charge separation properties. After receiving the photoelectrons from ZnO, graphene plane can effectively transfer the photoelectrons, thereby showing highly efficient photocatalytic degradation towards pollutants. The effective introduction of rGO significantly improved the photocatalysis and sensing properties of ZnO, and we believe that the as-prepared ZnO/rGO nanocomposite would be promising for practical applications in future nanotechnology.

  8. Facile fabrication of core-shell Pr6O11-ZnO modified silane coatings for anti-corrosion applications

    Science.gov (United States)

    Jeeva Jothi, K.; Palanivelu, K.

    2014-01-01

    In this work, we have developed a facile and inexpensive method to fabricate anti-corrosive and hydrophobic surface with hierarchical micro and nano structures. We demonstrate for the first time the use of praseodymium oxide doped zinc oxide (Pr6O11-ZnO) nanocomposites loaded in a hybrid sol-gel (SiOx/ZrOx) layer, to effectively protect the underlying steel substrate from corrosion attack. The influence of Pr6O11-ZnO gives the surprising aspects based on active anti-corrosion and hydrophobic coatings. The spherical SiO2 particles have been successfully coated with Pr6O11-ZnO layer through sol-gel process. The resulted SiO2@Pr6O11-ZnO core-shell was characterized by Transmission Electron Microscopy (TEM), X-ray diffraction (XRD), Fourier Transform Infrared Spectroscopy (FTIR), Scanning Electron Microscopy (SEM), and X-ray Photoelectron Spectroscopy (XPS). The barrier properties of the intact coatings were assessed by Electrochemical Impedance Spectroscopy (EIS). The fabrication of SiO2@Pr6O11-ZnO shows dual properties of hydrophobic and anti-corrosion micro/nanostructured sol-gel coatings follows a single/simple step coating procedure. This study has led to a better understanding factor influencing the anti-corrosion performance with embedded nanocomposites. These developments are particularly for silane network@ Pr6O11-ZnO for self-healing and self-cleaning behavior which can be designed for new protective coating system.

  9. Large-Scale Synthesis of Single-Crystalline Iron Oxide Magnetic Nanorings

    DEFF Research Database (Denmark)

    Jia, Chun-Jiang; Sun, Ling-Dong; Luo, Feng

    2008-01-01

    We present an innovative approach to the production of single-crystal iron oxide nanorings employing a solution-based route. Single-crystal hematite (alpha-Fe2O3) nanorings were synthesized using a double anion-assisted hydrothermal method (involving phosphate and sulfate ions), which can...... an intriguing three-dimensional magnetic configuration. This work provides an easily scaled-up method for preparing tailor-made iron oxide nanorings that could meet the demands of a variety of applications ranging from medicine to magnetoelectronics....... able to control the size, morphology, and surface architecture to produce a variety of three-dimensional hollow nanostructures. These can then be converted to magnetite (Fe3O4) and maghemite (gamma-Fe2O3) by a reduction or reduction-oxidation process while preserving the same morphology. The structures...

  10. Photoreactivity of ZnO nanoparticles in visible light: Effect of surface states on electron transfer reaction

    International Nuclear Information System (INIS)

    Baruah, Sunandan; Dutta, Joydeep; Sinha, Sudarson Sekhar; Ghosh, Barnali; Pal, Samir Kumar; Raychaudhuri, A. K.

    2009-01-01

    Wide band gap metal oxide semiconductors such as zinc oxide (ZnO) show visible band photolysis that has been employed, among others, to degrade harmful organic contaminants into harmless mineral acids. Metal oxides show enhanced photocatalytic activity with the increase in electronic defects in the crystallites. By introducing defects into the crystal lattice of ZnO nanoparticles, we observe a redshift in the optical absorption shifting from the ultraviolet region to the visible region (400-700 nm), which is due to the creation of intermediate defect states that inhibit the electron hole recombination process. The defects were introduced by fast nucleation and growth of the nanoparticles by rapid heating using microwave irradiation and subsequent quenching during the precipitation reaction. To elucidate the nature of the photodegradation process, picosecond resolved time correlated single photon count (TCSPC) spectroscopy was carried out to record the electronic transitions resulting from the de-excitation of the electrons to their stable states. Photodegradation and TCSPC studies showed that defect engineered ZnO nanoparticles obtained through fast crystallization during growth lead to a faster initial degradation rate of methylene blue as compared to the conventionally synthesized nanoparticles

  11. Single Crystal Growth of Pure Co3+ Oxidation State Material LaSrCoO4

    Directory of Open Access Journals (Sweden)

    Hanjie Guo

    2016-08-01

    Full Text Available We report on the single crystal growth of the single-layer perovskite cobaltate LaSrCoO4 that was grown by the optical floating zone method using high oxygen pressures. Phase purity and single crystallinity were confirmed by X-ray diffraction techniques. The pure Co3+ oxidation state was confirmed by X-ray absorbtion spectroscopy measurements. A transition to a spin glass state is observed at ∼7 K in magnetic susceptibility and specific heat measurements.

  12. Electrical transport through single-wall carbon nanotube-anodic aluminum oxide-aluminum heterostructures

    International Nuclear Information System (INIS)

    Kukkola, Jarmo; Rautio, Aatto; Sala, Giovanni; Pino, Flavio; Toth, Geza; Leino, Anne-Riikka; Maeklin, Jani; Jantunen, Heli; Uusimaeki, Antti; Kordas, Krisztian; Gracia, Eduardo; Terrones, Mauricio; Shchukarev, Andrey; Mikkola, Jyri-Pekka

    2010-01-01

    Aluminum foils were anodized in sulfuric acid solution to form thick porous anodic aluminum oxide (AAO) films of thickness ∼6 μm. Electrodes of carboxyl-functionalized single-wall carbon nanotube (SWCNT) thin films were inkjet printed on the anodic oxide layer and the electrical characteristics of the as-obtained SWCNT-AAO-Al structures were studied. Nonlinear current-voltage transport and strong temperature dependence of conduction through the structure was measured. The microstructure and chemical composition of the anodic oxide layer was analyzed using transmission and scanning electron microscopy as well as x-ray photoelectron spectroscopy. Schottky emission at the SWCNT-AAO and AAO-Al interfaces allowed by impurity states in the anodic aluminum oxide film together with ionic surface conduction on the pore walls of AAO gives a reasonable explanation for the measured electrical conduction. Calcined AAO is proposed as a dielectric material for SWCNT-field effect transistors.

  13. Curvature dependence of single-walled carbon nanotubes for SO2 adsorption and oxidation

    Science.gov (United States)

    Chen, Yanqiu; Yin, Shi; Li, Yueli; Cen, Wanglai; Li, Jianjun; Yin, Huaqiang

    2017-05-01

    Porous carbon-based catalysts showing high catalytic activity for SO2 oxidation to SO3 is often used in flue gas desulfurization. Their catalytic activity has been ascribed in many publications to the microporous structure and the effect of its spatial confinement. First principles method was used to investigate the adsorption and oxidation of SO2 on the inner and outer surface of single-walled carbon nanotubes (SWCNTs) with different diameters. It is interesting to found that there is a direct correlation: the barrier for the oxidation O_SWCNT + SO2 → SO3 + SWCNT monotonically decreases with the increase of SWCNTs' curvature. The oxygen functional located at the inner wall of SWCNTs with small radius is of higher activity for SO2 oxidation, which is extra enhanced by the spatial confinement effects of SWCNTs. These findings can be useful for the development of carbon-based catalysts and provide clues for the optimization and design of porous carbon catalysts.

  14. Cooperative properties of single phases of complex oxide catalyst for oxidation of propylene to acrolein

    International Nuclear Information System (INIS)

    Orel, L.I.; Udalova, O.V.; Korchak, V.N.; Isaev, O.V.; Krylov, O.V.; Gershenzon, Yu.M.; Aptekar', E.L.

    1992-01-01

    Synergetic effect of increase of acrolein yield during propylene oxidation on mechanical mixture of (α + β)CoMoO 4 and MoO 3 , as well as CO and CO 2 yield on mixture of CoMoO 4 and Bi 2 O 3 ·2MoO 3 was revealed. It is shown that CoMoO 4 generates allyl radicals, desorption of these radicals to gaseous phase is not practically observed with MoO 3 , bismuth molybdates and Fe 2 O 3 · Fe 2 O 3 ·3MoO 3

  15. Synthesis of High Crystalline Al-Doped ZnO Nanopowders from Al2O3 and ZnO by Radio-Frequency Thermal Plasma

    Directory of Open Access Journals (Sweden)

    Min-Kyeong Song

    2015-01-01

    Full Text Available High crystalline Al-doped ZnO (AZO nanopowders were prepared by in-flight treatment of ZnO and Al2O3 in Radio-Frequency (RF thermal plasma. Micron-sized (~1 μm ZnO and Al2O3 powders were mixed at Al/Zn ratios of 3.3 and 6.7 at.% and then injected into the RF thermal plasma torch along the centerline at a feeding rate of 6.6 g/min. The RF thermal plasma torch system was operated at the plate power level of ~140 kVA to evaporate the mixture oxides and the resultant vapor species were condensed into solid particles by the high flow rate of quenching gas (~7000 slpm. The FE-SEM images of the as-treated powders showed that the multipod shaped and the whisker type nanoparticles were mainly synthesized. In addition, these nanocrystalline structures were confirmed as the single phase AZO nanopowders with the hexagonal wurtzite ZnO structure by the XRD patterns and FE-TEM results with the SAED image. However, the composition changes of 0.3 and 1.0 at.% were checked for the as-synthesized AZO nanopowders at Al/Zn ratios of 3.3 and 6.7 at.%, respectively, by the XRF data, which can require the adjustment of Al/Zn in the mixture precursors for the applications of high Al doping concentrations.

  16. Tuning the optical bandgap in multi-cation compound transparent conducting-oxides: The examples of In2ZnO4 and In4Sn3O12

    Science.gov (United States)

    Sabino, Fernando P.; Oliveira, Luiz N.; Wei, Su-Huai; Da Silva, Juarez L. F.

    2018-02-01

    Transparent conducting oxides such as the bixbyite In2O3 and rutile SnO2 systems have large disparities between the optical and fundamental bandgaps, ΔEgO F , because selection rules forbid dipolar transitions from the top of the valence band to the conduction-band minimum; however, the optical gaps of multi-cation compounds with the same chemical species often coincide with their fundamental gaps. To explain this conundrum, we have employed density-functional theory to compute the optical properties of multi-cation compounds, In2ZnO4 and In4Sn3O12, in several crystal structures. We show that a recently proposed mechanism to explain the disparity between the optical and fundamental gaps of M2O3 (M = Al, Ga, and In) applies also to other binary systems and to multi-compounds. Namely, a gap disparity will arise if the following three conditions are satisfied: (i) the crystal structure has inversion symmetry; (ii) the conduction-band minimum is formed by the cation and O s-orbitals; and (iii) there is strong p-d coupling and weak p-p in the vicinity of the valence-band maximum. The third property depends critically on the cationic chemical species. In the structures with inversion symmetry, Zn (Sn) strengthens (weakens) the p-d coupling in In2ZnO4 (In4Sn3O12), enhancing (reducing) the gap disparity. Furthermore, we have also identified a In4Sn3O12 structure that is 31.80 meV per formula unit more stable than a recently proposed alternative model.

  17. Electrocatalytic oxidation of alcohols on single gold particles in highly ordered SiO2 cavities

    International Nuclear Information System (INIS)

    Li, Na; Zhou, Qun; Tian, Shu; Zhao, Hong; Li, Xiaowei; Adkins, Jason; Gu, Zhuomin; Zhao, Lili; Zheng, Junwei

    2013-01-01

    In the present work, we report a new and simple approach for preparing a highly ordered Au (1 1 1) nanoparticle (NP) array in SiO 2 cavities on indium-doped tin oxide (ITO) electrodes. We fabricated a SiO 2 cavity array on the surface of an ITO electrode using highly ordered self-assembly of polystyrene spheres as a template. Gold NPs were electrodeposited at the bottom of the SiO 2 cavities, and single gold NPs dominated with (1 1 1) facets were generated in each cavity by annealing the electrode at a high temperature. Such (1 1 1) facets were the predominate trait of the single gold particle which exhibited considerable electrocatalytic activity toward oxidation of methanol, ethanol, and glycerol. This has been attributed to the formation of incipient hydrous oxides at unusually low potential on the specific (1 1 1) facet of the gold particles. Moreover, each cavity of the SiO 2 possibly behaves as an independent electrochemical cell in which the methanol molecules are trapped; this produces an environment advantageous to catalyzing electrooxidation. The oxidation of methanol on the electrodes is a mixed control mechanism (both by diffusion and electrode kinetics). This strategy both provided an approach to study electrochemical reactions on a single particle in a microenvironment and may supply a way to construct alcohols sensors

  18. Clustered atom-replaced structure in single-crystal-like metal oxide

    Science.gov (United States)

    Araki, Takeshi; Hayashi, Mariko; Ishii, Hirotaka; Yokoe, Daisaku; Yoshida, Ryuji; Kato, Takeharu; Nishijima, Gen; Matsumoto, Akiyoshi

    2018-06-01

    By means of metal organic deposition using trifluoroacetates (TFA-MOD), we replaced and localized two or more atoms in a single-crystalline structure having almost perfect orientation. Thus, we created a new functional structure, namely, clustered atom-replaced structure (CARS), having single-crystal-like metal oxide. We replaced metals in the oxide with Sm and Lu and localized them. Energy dispersive x-ray spectroscopy results, where the Sm signal increases with the Lu signal in the single-crystalline structure, confirm evidence of CARS. We also form other CARS with three additional metals, including Pr. The valence number of Pr might change from 3+ to approximately 4+, thereby reducing the Pr–Ba distance. We directly observed the structure by a high-angle annular dark-field image, which provided further evidence of CARS. The key to establishing CARS is an equilibrium chemical reaction and a combination of additional larger and smaller unit cells to matrix cells. We made a new functional metal oxide with CARS and expect to realize CARS in other metal oxide structures in the future by using the above-mentioned process.

  19. ZnO based potentiometric and amperometric nanosensors.

    Science.gov (United States)

    Willander, Magnus; Khun, Kimleang; Ibupoto, Zafar Hussain

    2014-09-01

    The existence of nanomaterials provides the solid platform for sensing applications due to owing of high sensitivity and a low concentration limit of detection. More likely used nanomaterials for sensing applications includes gold nanoparticles, carbon nanotubes, magnetic nanoparticles such as Fe3O4, quantum dots and metal oxides etc. Recently nanomaterial and biological detection becomes an interdisciplinary field and is very much focussed by the researchers. Among metal oxides ZnO is largely considered due to its less toxic nature, biocompatible, cheap and easy to synthesis. ZnO nanomaterial is highly used for the chemical sensing, especially electrochemical sensing due to its fascinating properties such as high surface to volume ratio, atoxic, biosafe and biocompatible. Moreover, ZnO nanostructures exhibit unique features which could expose a suitable nanoenviroment for the immobilization of proteineous material such as enzymes, DNA, antibodies, etc. and in doing so it retains the biological efficiency of the immobilized bio sensitive material. The following review describes the two different coatings (i.e., ionophore and enzyme) on the surface of ZnO nanorods for the chemical sensing of zinc ion detection, thallium (I) ion detection, and L-lactic acid and the measurement of galactose molecules. ZnO nanorods provide the excellent transducing properties in the generation of strong electrical signals. Moreover, this review is very much focused on the applications of ZnO nanostructures in the sensing field.

  20. ZnO Nanostructures for Tissue Engineering Applications

    Directory of Open Access Journals (Sweden)

    Marco Laurenti

    2017-11-01

    Full Text Available This review focuses on the most recent applications of zinc oxide (ZnO nanostructures for tissue engineering. ZnO is one of the most investigated metal oxides, thanks to its multifunctional properties coupled with the ease of preparing various morphologies, such as nanowires, nanorods, and nanoparticles. Most ZnO applications are based on its semiconducting, catalytic and piezoelectric properties. However, several works have highlighted that ZnO nanostructures may successfully promote the growth, proliferation and differentiation of several cell lines, in combination with the rise of promising antibacterial activities. In particular, osteogenesis and angiogenesis have been effectively demonstrated in numerous cases. Such peculiarities have been observed both for pure nanostructured ZnO scaffolds as well as for three-dimensional ZnO-based hybrid composite scaffolds, fabricated by additive manufacturing technologies. Therefore, all these findings suggest that ZnO nanostructures represent a powerful tool in promoting the acceleration of diverse biological processes, finally leading to the formation of new living tissue useful for organ repair.

  1. Hydrodynamic fabrication of structurally gradient ZnO nanorods.

    Science.gov (United States)

    Kim, Hyung Min; Youn, Jae Ryoun; Song, Young Seok

    2016-02-26

    We studied a new approach where structurally gradient nanostructures were fabricated by means of hydrodynamics. Zinc oxide (ZnO) nanorods were synthesized in a drag-driven rotational flow in a controlled manner. The structural characteristics of nanorods such as orientation and diameter were determined by momentum and mass transfer at the substrate surface. The nucleation of ZnO was induced by shear stress which plays a key role in determining the orientation of ZnO nanorods. The nucleation and growth of such nanostructures were modeled theoretically and analyzed numerically to understand the underlying physics of the fabrication of nanostructures controlled by hydrodynamics. The findings demonstrated that the precise control of momentum and mass transfer enabled the formation of ZnO nanorods with a structural gradient in diameter and orientation.

  2. Reducing ZnO nanoparticle cytotoxicity by surface modification.

    Science.gov (United States)

    Luo, Mingdeng; Shen, Cenchao; Feltis, Bryce N; Martin, Lisandra L; Hughes, Anthony E; Wright, Paul F A; Turney, Terence W

    2014-06-07

    Nanoparticulate zinc oxide (ZnO) is one of the most widely used engineered nanomaterials and its toxicology has gained considerable recent attention. A key aspect for controlling biological interactions at the nanoscale is understanding the relevant nanoparticle surface chemistry. In this study, we have determined the disposition of ZnO nanoparticles within human immune cells by measurement of total Zn, as well as the proportions of extra- and intracellular dissolved Zn as a function of dose and surface coating. From this mass balance, the intracellular soluble Zn levels showed little difference in regard to dose above a certain minimal level or to different surface coatings. PEGylation of ZnO NPs reduced their cytotoxicity as a result of decreased cellular uptake arising from a minimal protein corona. We conclude that the key role of the surface properties of ZnO NPs in controlling cytotoxicity is to regulate cellular nanoparticle uptake rather than altering either intracellular or extracellular Zn dissolution.

  3. Investigation of the pulsed electrochemical deposition of ZnO

    International Nuclear Information System (INIS)

    Dunkel, Christian; Lüttich, Franziska; Graaf, Harald; Oekermann, Torsten; Wark, Michael

    2012-01-01

    The influence of pulse parameters on the morphology of ZnO prepared by pulsed cathodic electrodeposition from oxygen-saturated aqueous ZnCl 2 solution on ITO (indium tin oxide)/glass substrates was investigated. It was found that the ratio between the pulse and the pause duration has a crucial influence on the crystal growth, reaching the highest density of the films with pause/pulse-ratios between 0.25 and 1. Longer pauses cause an Ostwald-like ripening of the ZnO crystals and therewith a strong change in the crystal morphology from roundly shaped to hexagonal. Also the hydrophilicity of the substrate resulting from pre-treatment has a crucial influence on the deposited films, leading to films only consisting of few large and separately grown ZnO crystals for highly hydrophilic substrates and an increasing fraction of small densely grown ZnO crystals with increasing hydrophobicity.

  4. Optimization of CVD parameters for long ZnO NWs grown on ITO ...

    Indian Academy of Sciences (India)

    Zinc oxide (ZnO) is a II–VI compound semiconductor with a wide direct energy .... observed by scanning electron microscope (SEM/JEOL–. JSM 5140) ... SEM images of ZnO NWs growth on ITO–glass at argon to oxygen flow rate = 200/20 ...

  5. ZnO nanoparticle as catalyst for efficient green one-pot synthesis of ...

    Indian Academy of Sciences (India)

    The zinc oxide (ZnO) nanoparticles functions as highly effective catalyst for the reactions of various o-hydroxy ... the synthesis of relatively large and complex molecules .... of ethylene diamine in hydrothermal ZnO nanorod syn- thesis. Di- and ...

  6. Micrometer-sized Isolated Patterns of Conductive ZnO derived by Micromoulding

    NARCIS (Netherlands)

    Göbel, Ole F.; ten Elshof, Johan E.; Blank, David A.H.

    2009-01-01

    We succeeded in the fabrication of large-area patterns with micrometer-sized, isolated features of a simple oxide by a technically simple patterning method. By micromoulding a polymeric precursor solution for ZnO with an elastomeric (PDMS) mould, and a subsequent heat treatment, patterned ZnO films

  7. Electrochemical reduction of nitroaromatic compounds by single sheet iron oxide coated electrodes

    Energy Technology Data Exchange (ETDEWEB)

    Huang, Li-Zhi, E-mail: lizhi@plen.ku.dk [Department of Plant and Environmental Sciences, University of Copenhagen, Thorvaldsensvej 40, DK–1871 Frederiksberg C (Denmark); Hansen, Hans Christian B. [Department of Plant and Environmental Sciences, University of Copenhagen, Thorvaldsensvej 40, DK–1871 Frederiksberg C (Denmark); Bjerrum, Morten Jannik [Department of Chemistry, University of Copenhagen, Universitetsparken 5, DK–2100 København Ø (Denmark)

    2016-04-05

    Highlights: • Composite layers of single sheet iron oxides were coated on indium tin oxide electrodes. • Single sheet iron oxide is an electro-catalyst for reduction of nitroaromatic compounds in aqueous solution. • The reduction is well explained by a diffusion layer model. • The charge properties of the nitrophenols have an important influence on reduction. • Low-cost iron oxide based materials are promising electro-catalyst for water treatment. - Abstract: Nitroaromatic compounds are substantial hazard to the environment and to the supply of clean drinking water. We report here the successful reduction of nitroaromatic compounds by use of iron oxide coated electrodes, and demonstrate that single sheet iron oxides formed from layered iron(II)-iron(III) hydroxides have unusual electrocatalytic reactivity. Electrodes were produced by coating of single sheet iron oxides on indium tin oxide electrodes. A reduction current density of 10 to 30 μA cm{sup −2} was observed in stirred aqueous solution at pH 7 with concentrations of 25 to 400 μM of the nitroaromatic compound at a potential of −0.7 V vs. SHE. Fast mass transfer favors the initial reduction of the nitroaromatic compound which is well explained by a diffusion layer model. Reduction was found to comprise two consecutive reactions: a fast four-electron first-order reduction of the nitro-group to the hydroxylamine-intermediate (rate constant = 0.28 h{sup −1}) followed by a slower two-electron zero-order reduction resulting in the final amino product (rate constant = 6.9 μM h{sup −1}). The zero-order of the latter reduction was attributed to saturation of the electrode surface with hydroxylamine-intermediates which have a more negative half-wave potential than the parent compound. For reduction of nitroaromatic compounds, the SSI electrode is found superior to metal electrodes due to low cost and high stability, and superior to carbon-based electrodes in terms of high coulombic efficiency and

  8. Interaction and photodegradation characteristics of fluorescein dye in presence of ZnO nanoparticles.

    Science.gov (United States)

    Bardhan, Munmun; Mandal, Gopa; Ganguly, Tapan

    2011-04-01

    The interaction between xanthene dye Fluorescein (Fl) and zinc oxide (ZnO) nanoparticles is investigated under physiological conditions. From the analysis of the steady state and time resolved spectroscopic studies in aqueous solution static mode is found to be responsible in the mechanism of fluorescence quenching of the dye Fl in presence of ZnO. ZnO nanoparticles are used as photocatalyst in order to degrade Fl dye. At pH 7, a maximum degradation efficiency of 44.4% of the dye has been achieved in presence of ZnO as a nanophotocatalyst and the photodegradation follows second-order kinetics.

  9. Room temperature inorganic polycondensation of oxide (Cu2O and ZnO) nanoparticles and thin films preparation by the dip-coating technique

    OpenAIRE

    Salek, Guillaume; Tenailleau, Christophe; Dufour, Pascal; Guillemet-Fritsch, Sophie

    2015-01-01

    International audience; Oxide thin solid filmswere prepared by dip-coating into colloidal dispersions of oxide nanoparticles stabilized at room temperaturewithout the use of chelating or complex organic dispersing agents. Crystalline oxide nanoparticles were obtained by inorganic polycondensation and characterized by X-ray diffraction and field emission gun scanning electron microscopy. Water and ethanol synthesis and solution stabilization of oxide nanoparticle method was optimized to prepar...

  10. Investigation on structural and electrical properties of Fe doped ZnO nanoparticles synthesized by solution combustion method

    International Nuclear Information System (INIS)

    Ram, Mast; Bala, Kanchan; Sharma, Hakikat; Kumar, Arun; Negi, N. S.

    2016-01-01

    In the present study, nanoparticles of Fe doped zinc oxide (ZnO) [Zn_1_-_xFe_xO where x=0.0, 0.01, 0.02, 0.03 and 0.05] were prepared by cost effective solution combustion method. The powder X-ray diffractometry confirms the formation of single phase wurtzite structure. Scanning electron microscopy (SEM) and transmission electron microscopy (TEM) were used to investigate the micrsostructure of Fe-doped ZnO nanoparticles. The DC electrical conductivity was found to increase with temperature and measurement was carried out in the temperature range of 300-473K. DC electrical conductivity increases with temperature and decreases with Fe doping concentration.

  11. Non-classical logic inverter coupling a ZnO nanowire-based Schottky barrier transistor and adjacent Schottky diode.

    Science.gov (United States)

    Hosseini Shokouh, Seyed Hossein; Raza, Syed Raza Ali; Lee, Hee Sung; Im, Seongil

    2014-08-21

    On a single ZnO nanowire (NW), we fabricated an inverter-type device comprising a Schottky diode (SD) and field-effect transistor (FET), aiming at 1-dimensional (1D) electronic circuits with low power consumption. The SD and adjacent FET worked respectively as the load and driver, so that voltage signals could be easily extracted as the output. In addition, NW FET with a transparent conducting oxide as top gate turned out to be very photosensitive, although ZnO NW SD was blind to visible light. Based on this, we could achieve an array of photo-inverter cells on one NW. Our non-classical inverter is regarded as quite practical for both logic and photo-sensing due to its performance as well as simple device configuration.

  12. Room temperature photoluminescence properties of ZnO nanorods grown by hydrothermal reaction

    Energy Technology Data Exchange (ETDEWEB)

    Iwan, S., E-mail: iwan-sugihartono@unj.ac.id [Jurusan Fisika, FMIPA-UNJ, Rawamangun, Jakarta (Indonesia); Prodi Ilmu Material, Departemen Fisika, FMIPA, Universitas Indonesia, Kampus UI Depok (Indonesia); Fauzia, Vivi [Prodi Ilmu Material, Departemen Fisika, FMIPA, Universitas Indonesia, Kampus UI Depok (Indonesia); Umar, A. A. [Institute of Microengineering and Nanoelectronics, Universiti Kebangsaan Malaysia, UKM Bangi, Selangor (Malaysia); Sun, X. W. [School of Electrical & Electronic Engineering, Nanyang Technological University, Nanyang Avenue (Singapore)

    2016-04-19

    Zinc oxide (ZnO) nanorods were fabricated by a hydrothermal reaction on silicon (Si) substrate at 95 °C for 6 hours. The ZnO seed layer was fabricated by depositing ZnO thin films on Si substrates by ultrasonic spray pyrolisis (USP). The annealing effects on crystal structure and optical properties of ZnO nanorods were investigated. The post-annealing treatment was performed at 800 °C with different environments. The annealed of ZnO nanorods were characterized by X-ray diffraction (XRD) and photoluminescence (PL) in order to analyze crystal structure and optical properties, respectively. The results show the orientations of [002], [101], [102], and [103] diffraction peaks were observed and hexagonal wurtzite structure of ZnO nanorods were vertically grown on Si substrates. The room temperature PL spectra show ultra-violet (UV) and visible emissions. The annealed of ZnO nanorods in vacuum condition (3.8 × 10{sup −3} Torr) has dominant UV emission. Meanwhile, non-annealed of ZnO nanorods has dominant visible emission. It was expected that the annealed of ZnO in vacuum condition suppresses the existence of native defects in ZnO nanorods.

  13. Low-temperature growth of well-aligned zinc oxide nanorod arrays on silicon substrate and their photocatalytic application

    Directory of Open Access Journals (Sweden)

    Azam A

    2014-04-01

    Full Text Available Ameer Azam,1 Saeed Salem Babkair21Center of Nanotechnology, King Abdulaziz University, Jeddah, Saudi Arabia; 2Center of Nanotechnology, Department of Physics, Faculty of Science, King Abdulaziz University, Jeddah, Saudi ArabiaAbstract: Well-aligned and single-crystalline zinc oxide (ZnO nanorod arrays were grown on silicon (Si substrate using a wet chemical route for the photodegradation of organic dyes. Structural analysis using X-ray diffraction, high-resolution transmission electron microscopy, and selected area electron diffraction confirmed the formation of ZnO nanorods grown preferentially oriented in the (001 direction and with a single phase nature with a wurtzite structure. Field emission scanning electron microscopy and transmission electron microscopy micrographs showed that the length and diameter of the well-aligned rods were about ~350–400 nm and ~80–90 nm, respectively. Raman scattering spectra of ZnO nanorod arrays revealed the characteristic E2 (high mode that is related to the vibration of oxygen atoms in the wurtzite ZnO. The photodegradation of methylene blue (MB using ZnO nanorod arrays was performed under ultraviolet light irradiation. The results of photodegradation showed that ZnO nanorod arrays were capable of degrading ~80% of MB within 60 minutes of irradiation, whereas ~92% of degradation was achieved in 120 minutes. Complete degradation of MB was observed after 270 minutes of irradiation time. Owing to enhanced photocatalytic degradation efficiency and low-temperature growth method, prepared ZnO nanorod arrays may open up the possibility for the successful utilization of ZnO nanorod arrays as a future photocatalyst for environmental remediation.Keywords: ZnO, nanorods, XRD, photodegradation

  14. UV-Enhanced Ethanol Sensing Properties of RF Magnetron-Sputtered ZnO Film.

    Science.gov (United States)

    Huang, Jinyu; Du, Yu; Wang, Quan; Zhang, Hao; Geng, Youfu; Li, Xuejin; Tian, Xiaoqing

    2017-12-26

    ZnO film was deposited by the magnetron sputtering method. The thickness of ZnO film is approximately 2 μm. The influence of UV light illumination on C₂H₅OH sensing properties of ZnO film was investigated. Gas sensing results revealed that the UV-illuminated ZnO film displays excellent C₂H₅OH characteristics in terms of high sensitivity, excellent selectivity, rapid response/recovery, and low detection limit down to 0.1 ppm. The excellent sensing performance of the sensor with UV activation could be attributed to the photocatalytic oxidation of ethanol on the surface of the ZnO film, the planar film structure with high utilizing efficiency of UV light, high electron mobility, and a good surface/volume ratio of of ZnO film with a relatively rough and porous surface.

  15. Theoretical prediction of low-density hexagonal ZnO hollow structures

    Energy Technology Data Exchange (ETDEWEB)

    Tuoc, Vu Ngoc, E-mail: tuoc.vungoc@hust.edu.vn [Institute of Engineering Physics, Hanoi University of Science and Technology, 1 Dai Co Viet Road, Hanoi (Viet Nam); Huan, Tran Doan [Institute of Materials Science, University of Connecticut, Storrs, Connecticut 06269-3136 (United States); Thao, Nguyen Thi [Institute of Engineering Physics, Hanoi University of Science and Technology, 1 Dai Co Viet Road, Hanoi (Viet Nam); Hong Duc University, 307 Le Lai, Thanh Hoa City (Viet Nam); Tuan, Le Manh [Hong Duc University, 307 Le Lai, Thanh Hoa City (Viet Nam)

    2016-10-14

    Along with wurtzite and zinc blende, zinc oxide (ZnO) has been found in a large number of polymorphs with substantially different properties and, hence, applications. Therefore, predicting and synthesizing new classes of ZnO polymorphs are of great significance and have been gaining considerable interest. Herein, we perform a density functional theory based tight-binding study, predicting several new series of ZnO hollow structures using the bottom-up approach. The geometry of the building blocks allows for obtaining a variety of hexagonal, low-density nanoporous, and flexible ZnO hollow structures. Their stability is discussed by means of the free energy computed within the lattice-dynamics approach. Our calculations also indicate that all the reported hollow structures are wide band gap semiconductors in the same fashion with bulk ZnO. The electronic band structures of the ZnO hollow structures are finally examined in detail.

  16. Integrated ZnO nanotube arrays as efficient dye-sensitized solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Xi, Y., E-mail: yxi6@cqu.edu.cn [Department of Applied Physics, Chongqing University, Chongqing 400044 (China); School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, GA 30332-0245 (United States); Wu, W.Z.; Fang, H. [School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, GA 30332-0245 (United States); Hu, C.G. [Department of Applied Physics, Chongqing University, Chongqing 400044 (China)

    2012-07-15

    Highlights: Black-Right-Pointing-Pointer Tuning the reaction parameters, we got the best reaction conditions on ITO glass. Black-Right-Pointing-Pointer Introduce ZnO NTs design of photoanode featuring high aspect ratio structure. Black-Right-Pointing-Pointer The design strategy integrates the optical fibers or ITO with ZnO NTs grown. - Abstract: Zinc oxide (ZnO) is a wide band gap semiconducting material and has been considered as an alternative material in dye-sensitized solar cell (DSSC) applications. A high-performance nanotube (NT) photoanode must have a large surface area for dye adsorption in order to enhance conversion efficiency. In this work, the way of hydrothermally grown ZnO NT arrays on the indium tin oxide (ITO) substrate is presented by utilizing a systematic study. By adjusting the hydrothermal reaction parameters, we attained the optimizing reaction conditions on the ITO substrate. Moreover, ZnO NT arrays are introduced as a photoanode on various substrates, such as optical fiber and ITO glass, for DSSCs applications. We took the contrast test with conversion efficiency of the DSSC based on ZnO NT arrays versus ZnO nanowire arrays on the ITO substrate, which the DSSC based on ZnO NT arrays shows significantly enhanced power conversion efficiency. Furthermore, the conversion efficiency of DSSC based on the ZnO NT arrays grown on an optical fiber substrate is enhanced up to 1.44%.

  17. The surface defect-related electroluminescence from the ZnO microwire

    Energy Technology Data Exchange (ETDEWEB)

    Ding Meng; Zhao Dongxu; Yao Bin; Li Binghui; Zhang Zhenzhong; Shan Chongxin; Shen Dezhen, E-mail: dxzhao2000@yahoo.com.cn [Key Laboratory of Excited State Processes, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130021 (China)

    2011-02-23

    Surface defect-related electroluminescence (EL) was realized from a single ZnO microwire-based metal-semiconductor-metal structure on a glass substrate. ZnO microwires were successfully fabricated using a simple chemical vapour deposition approach. Schottky contacts were detected between Au electrodes and the ZnO microwire. The EL spectrum showed a broad emission band covering the visible range from 400 to 700 nm. The possible EL emission mechanism is discussed in detail in this paper.

  18. Oxygen vacancy-induced ferromagnetism in un-doped ZnO thin films

    Science.gov (United States)

    Zhan, Peng; Wang, Weipeng; Liu, Can; Hu, Yang; Li, Zhengcao; Zhang, Zhengjun; Zhang, Peng; Wang, Baoyi; Cao, Xingzhong

    2012-02-01

    ZnO films became ferromagnetic when defects were introduced by thermal-annealing in flowing argon. This ferromagnetism, as shown by the photoluminescence measurement and positron annihilation analysis, was induced by the singly occupied oxygen vacancy with a saturated magnetization dependent positively on the amount of this vacancy. This study clarified the origin of the ferromagnetism of un-doped ZnO thin films and provides possibly an alternative way to prepare ferromagnetic ZnO films.

  19. Mechanical and tribological property of single layer graphene oxide reinforced titanium matrix composite coating

    Science.gov (United States)

    Hu, Zengrong; Li, Yue; Fan, Xueliang; Chen, Feng; Xu, Jiale

    2018-04-01

    Single layer grapheme oxide Nano sheets and Nano titanium powder were dispersed in deionized water by ultrasonic dispersion. Then the mixed solution was pre-coating on AISI4140 substrate. Using laser sintering process to fabricated grapheme oxide and Ti composite coating. Microstructures and composition of the composite coating was studied by Scanning Electron Microscopy (SEM), x-ray diffract meter (XRD) and Raman spectroscopy. Raman spectrum, XRD pattern and SEM results proved that grapheme oxide sheets were dispersed in the composite coating. The composite coating had much higher average Vickers hardness values than that of pure Ti coating. The tribological performance of the composite coatings became better while the suitable GO content was selected. For the 2.5wt. % GO content coating, the friction coefficient was reduced to near 0.1.

  20. Hydrothermal growth and characterizations of dandelion-like ZnO nanostructures

    Energy Technology Data Exchange (ETDEWEB)

    Kale, Rohidas B., E-mail: rb_kale@yahoo.co.in [Department of Physics, The Institute of Science, Madam Cama Road, Mumbai 400 032, (M.S.) (India); Lu, Shih-Yuan, E-mail: sylu@nthu.edu.tw [Department of Chemical Engineering, National Tsing-Hua University, Hsinchu 30013, Taiwan, ROC (China)

    2013-12-05

    Highlights: •The simple, low cost, environmental benign hydrothermal method has been used to synthesize ZnO nanostructure. •The SEM images reveal the interesting 3D dandelion-like morphology of synthesized ZnO nanostructure. The SAED pattern and HRTEM study confirms that the ZnO nanorods are single crystalline. •Change in experimental conditions dramatically changes the morphologies of the synthesized ZnO. •The room temperature PL study reveals strong band edge emission along with much weaker defect related blue emission. •The reaction and growth mechanism of ZnO nanostructure is also discussed. -- Abstract: Three dimensional (3D) ZnO nanostructures have been synthesized by using a facile low-cost hydrothermal method under mild conditions. Aqueous alkaline ammonia solution of Zn(CH{sub 3}COO){sub 2} is used to grow 3D ZnO nanostructures. The X-ray diffraction (XRD) study reveals the well crystallized hexagonal structure of ZnO. SEM observations depict that the ZnO product grows in the form of nanorods united together to form 3D dandelion-like nanostructures. The elemental analysis using EDAX technique confirms the stoichiometry of the ZnO nanorods. The product exhibits special optical properties with red-shifts in optical absorption peak (376 nm) as compared with those of conventional ZnO nanorods. PL spectra show emission peak (396 nm) at the near band-edge and peak (464 nm) originated from defects states that are produced during the hydrothermal growth. TEM and SAED results reveal single crystalline structure of the synthesized product. The reaction and growth mechanisms on the morphological evolution of the ZnO nanostructures are discussed. The morphology of ZnO product is investigated by varying the reaction time, temperature, and type of complexing reagent.

  1. Oxalic acid induced hydrothermal synthesis of single crystalline tungsten oxide nanorods

    International Nuclear Information System (INIS)

    Patil, V.B.; Adhyapak, P.V.; Suryavanshi, S.S.; Mulla, I.S.

    2014-01-01

    Highlights: • We report synthesis of 1D tungsten oxide using a hydrothermal route at 170 °C. • Oxalic acid plays an important role in the formation of 1D nanostructure. • Monoclinic transforms to hexagonal phase with increment in reaction duration. -- Abstract: One-dimensional single-crystalline tungsten oxide nanorods have been synthesized by the hydrothermal technique. The controlled morphology of tungsten oxide was obtained by using sodium tungstate and oxalic acid as an organic inducer. The reaction was carried out at 170 °C for 24, 48 and 72 h. The obtained tungsten oxides were investigated by using XRD, SEM and HRTEM techniques. In order to understand the role of organic inducer on the shape, size and phase formation of WO 3 was prepared with and without organic inducer. On heating of sodium tungstate without organic inducer for 72 h at 170 °C in the hydrothermal unit we obtain nanoparticles of monoclinic WO 3 , however, on addition of oxalic acid a single phase hexagonal WO 3 with distinct nanorods was formed. On addition of oxalic acid a systematic emergence of nanorod-like morphology was obtained with incrementing reaction times from 24 h to 48 h. The 72 h reaction generates self-assembled 20–30 nm diameter and 4–5 μm long h-WO 3 bundles of nanorods. The XRD studies show hexagonal structure of tungsten oxide, while SAED reveals its single crystalline nature. The photoluminescence (PL) emission spectrum shows a characteristic blue emission peak at 3 eV (410 nm). Raman spectra provide the evidence of hexagonal structure with stretching vibrations (830 cm −1 ) for 72 h of heating at 170 °C

  2. Oxalic acid induced hydrothermal synthesis of single crystalline tungsten oxide nanorods

    Energy Technology Data Exchange (ETDEWEB)

    Patil, V.B. [School of Physical Sciences, Solapur University, Solapur 413255 (India); Adhyapak, P.V. [Centre for Materials for Electronic Technology (C-MET), Pune 411008 (India); Suryavanshi, S.S., E-mail: sssuryavanshi@rediffmail.com [School of Physical Sciences, Solapur University, Solapur 413255 (India); Mulla, I.S., E-mail: ismulla2001@gmail.com [Emeritus Scientist (CSIR), Centre for Materials for Electronic Technology (C-MET), Pune 411008 (India)

    2014-03-25

    Highlights: • We report synthesis of 1D tungsten oxide using a hydrothermal route at 170 °C. • Oxalic acid plays an important role in the formation of 1D nanostructure. • Monoclinic transforms to hexagonal phase with increment in reaction duration. -- Abstract: One-dimensional single-crystalline tungsten oxide nanorods have been synthesized by the hydrothermal technique. The controlled morphology of tungsten oxide was obtained by using sodium tungstate and oxalic acid as an organic inducer. The reaction was carried out at 170 °C for 24, 48 and 72 h. The obtained tungsten oxides were investigated by using XRD, SEM and HRTEM techniques. In order to understand the role of organic inducer on the shape, size and phase formation of WO{sub 3} was prepared with and without organic inducer. On heating of sodium tungstate without organic inducer for 72 h at 170 °C in the hydrothermal unit we obtain nanoparticles of monoclinic WO{sub 3}, however, on addition of oxalic acid a single phase hexagonal WO{sub 3} with distinct nanorods was formed. On addition of oxalic acid a systematic emergence of nanorod-like morphology was obtained with incrementing reaction times from 24 h to 48 h. The 72 h reaction generates self-assembled 20–30 nm diameter and 4–5 μm long h-WO{sub 3} bundles of nanorods. The XRD studies show hexagonal structure of tungsten oxide, while SAED reveals its single crystalline nature. The photoluminescence (PL) emission spectrum shows a characteristic blue emission peak at 3 eV (410 nm). Raman spectra provide the evidence of hexagonal structure with stretching vibrations (830 cm{sup −1}) for 72 h of heating at 170 °C.

  3. Direct observation of short-circuit diffusion during the formation of a single cupric oxide nanowire

    International Nuclear Information System (INIS)

    Cheng, C-L; Ma, Y-R; Chou, M H; Huang, C Y; Yeh, V; Wu, S Y

    2007-01-01

    Short-circuit diffusion was observed in a single CuO nanowire synthesized using a thermal oxidation method. The confocal Raman spectra of a single CuO nanowire permit direct observation of the nature of an individual CuO nanowire. The parameter order obtained from the inverse Raman B g 2 peak linewidth results in the length dependence of the linewidth and a short-circuit diffusion length of 3.3 μm. The observed structural information is also consistent with the energy dispersive x-ray spectroscopic mapping. The results confirm that the growth of CuO nanowires occurs through the short-circuit diffusion mechanism

  4. Surface conductivity of the single crystal aluminum oxide in vacuum and caesium vapors

    International Nuclear Information System (INIS)

    Vasilchenko, A.V.; Izhvanov, O.L.

    1996-01-01

    Results of measurements of surface conductivity of single-crystal aluminum oxide samples in vacuum and cesium vapors at T=620 endash 830 K and P Cs =0.13 endash 2 Pa are shown in the paper. Analysis of caesium vapor influence is carried out and ultimate characteristics of samples conductivity under operation conditions in thermionic nuclear power system (NPP) TFE are estimated. copyright 1996 American Institute of Physics

  5. Toxicology Study of Single-walled Carbon Nanotubes and Reduced Graphene Oxide in Human Sperm

    Science.gov (United States)

    Asghar, Waseem; Shafiee, Hadi; Velasco, Vanessa; Sah, Vasu R.; Guo, Shirui; El Assal, Rami; Inci, Fatih; Rajagopalan, Adhithi; Jahangir, Muntasir; Anchan, Raymond M.; Mutter, George L.; Ozkan, Mihrimah; Ozkan, Cengiz S.; Demirci, Utkan

    2016-08-01

    Carbon-based nanomaterials such as single-walled carbon nanotubes and reduced graphene oxide are currently being evaluated for biomedical applications including in vivo drug delivery and tumor imaging. Several reports have studied the toxicity of carbon nanomaterials, but their effects on human male reproduction have not been fully examined. Additionally, it is not clear whether the nanomaterial exposure has any effect on sperm sorting procedures used in clinical settings. Here, we show that the presence of functionalized single walled carbon nanotubes (SWCNT-COOH) and reduced graphene oxide at concentrations of 1-25 μg/mL do not affect sperm viability. However, SWCNT-COOH generate significant reactive superoxide species at a higher concentration (25 μg/mL), while reduced graphene oxide does not initiate reactive species in human sperm. Further, we demonstrate that exposure to these nanomaterials does not hinder the sperm sorting process, and microfluidic sorting systems can select the sperm that show low oxidative stress post-exposure.

  6. Toxicology Study of Single-walled Carbon Nanotubes and Reduced Graphene Oxide in Human Sperm.

    Science.gov (United States)

    Asghar, Waseem; Shafiee, Hadi; Velasco, Vanessa; Sah, Vasu R; Guo, Shirui; El Assal, Rami; Inci, Fatih; Rajagopalan, Adhithi; Jahangir, Muntasir; Anchan, Raymond M; Mutter, George L; Ozkan, Mihrimah; Ozkan, Cengiz S; Demirci, Utkan

    2016-08-19

    Carbon-based nanomaterials such as single-walled carbon nanotubes and reduced graphene oxide are currently being evaluated for biomedical applications including in vivo drug delivery and tumor imaging. Several reports have studied the toxicity of carbon nanomaterials, but their effects on human male reproduction have not been fully examined. Additionally, it is not clear whether the nanomaterial exposure has any effect on sperm sorting procedures used in clinical settings. Here, we show that the presence of functionalized single walled carbon nanotubes (SWCNT-COOH) and reduced graphene oxide at concentrations of 1-25 μg/mL do not affect sperm viability. However, SWCNT-COOH generate significant reactive superoxide species at a higher concentration (25 μg/mL), while reduced graphene oxide does not initiate reactive species in human sperm. Further, we demonstrate that exposure to these nanomaterials does not hinder the sperm sorting process, and microfluidic sorting systems can select the sperm that show low oxidative stress post-exposure.

  7. Pressure effect on ionic conductivity in yttrium-oxide-doped single-crystal zirconium oxide

    International Nuclear Information System (INIS)

    Park, E.T.; Park, J.H.

    1998-06-01

    In this study, the authors investigated the effect of pressure on the ionic conductivity of a 9.5 mol% yttria-stabilized zirconia (YSZ) single crystal. The experiment was conducted in the elastic region, and the oxygen ion transport number was unity (t ion > 0.99999). A conventional four-probe DC method was used to measure the ionic conductivity of the rectangular-shaped sample under uniaxial pressures up to 600 atm at 750 C in air. Measured ionic conductivity decreased as applied pressure increased. Based on henry Eyring's absolute reaction rate theory, which states that the calculated activation volume has a positive value (ΔV 2 = 2.08 cm 3 /mol of O -2 ) for oxygen ion transport in the fluoride cubic lattice, they concluded that the results they obtained could be explained by an oxygen ion transport mechanism. This mechanism can explain the fact that the interionic distance increases during oxygen ion transport from one unit cell to neighboring unit cells

  8. Optical and luminescence properties of zinc oxide (Review)

    Science.gov (United States)

    Rodnyi, P. A.; Khodyuk, I. V.

    2011-11-01

    We generalize and systematize basic experimental data on optical and luminescence properties of ZnO single crystals, thin films, powders, ceramics, and nanocrystals. We consider and study mechanisms by which two main emission bands occur, a short-wavelength band near the fundamental absorption edge and a broad long-wavelength band, the maximum of which usually lies in the green spectral range. We determine a relationship between the two luminescence bands and study in detail the possibility of controlling the characteristics of ZnO by varying the maximum position of the short-wavelength band. We show that the optical and luminescence characteristics of ZnO largely depend on the choice of the corresponding impurity and the parameters of the synthesis and subsequent treatment of the sample. Prospects for using zinc oxide as a scintillator material are discussed. Additionally, we consider experimental results that are of principal interest for practice.

  9. Ni-doped zinc oxide nanocombs and phonon spectra properties

    International Nuclear Information System (INIS)

    Zhang Bin; Zhang Xingtang; Gong Hechun; Wu Zhishen; Zhou Shaomin; Du Zuliang

    2008-01-01

    Ni-doped comb-like zinc oxide (ZnO) semiconductor nanostructures have been synthesized by a simple chemical vapor-deposition method (CVD) at relatively low temperature. The as-synthesized ZnO nanocombs consist of an array of very uniform, perfectly aligned, evenly spaced and long single-crystalline nanobelts (nanowires) with periods of about several tens of nanometers. X-ray diffraction and Raman spectra results provide the evidence that Ni is incorporated into the ZnO lattice at Zn site. Photoluminescence spectra of the as-obtained samples have been detected, in which the incorporation of donor Ni leads to the increases of the ultraviolet emission intensity and a blueshift of emission peak. This technique can be used to prepare other semiconductors and morphology-controlled doping nanocombs

  10. Electrocatalytic Water Oxidation by a Homogeneous Copper Catalyst Disfavors Single-Site Mechanisms.

    Science.gov (United States)

    Koepke, Sara J; Light, Kenneth M; VanNatta, Peter E; Wiley, Keaton M; Kieber-Emmons, Matthew T

    2017-06-28

    Deployment of solar fuels derived from water requires robust oxygen-evolving catalysts made from earth abundant materials. Copper has recently received much attention in this regard. Mechanistic parallels between Cu and single-site Ru/Ir/Mn water oxidation catalysts, including intermediacy of terminal Cu oxo/oxyl species, are prevalent in the literature; however, intermediacy of late transition metal oxo species would be remarkable given the high d-electron count would fill antibonding orbitals, making these species high in energy. This may suggest alternate pathways are at work in copper-based water oxidation. This report characterizes a dinuclear copper water oxidation catalyst, {[(L)Cu(II)] 2 -(μ-OH) 2 }(OTf) 2 (L = Me 2 TMPA = bis((6-methyl-2-pyridyl)methyl)(2-pyridylmethyl)amine) in which water oxidation proceeds with high Faradaic efficiency (>90%) and moderate rates (33 s -1 at ∼1 V overpotential, pH 12.5). A large kinetic isotope effect (k H /k D = 20) suggests proton coupled electron transfer in the initial oxidation as the rate-determining step. This species partially dissociates in aqueous solution at pH 12.5 to generate a mononuclear {[(L)Cu(II)(OH)]} + adduct (K eq = 0.0041). Calculations that reproduce the experimental findings reveal that oxidation of either the mononuclear or dinuclear species results in a common dinuclear intermediate, {[LCu(III)] 2 -(μ-O) 2 } 2+ , which avoids formation of terminal Cu(IV)═O/Cu(III)-O • intermediates. Calculations further reveal that both intermolecular water nucleophilic attack and redox isomerization of {[LCu(III)] 2 -(μ-O) 2 } 2+ are energetically accessible pathways for O-O bond formation. The consequences of these findings are discussed in relation to differences in water oxidation pathways between Cu catalysts and catalysts based on Ru, Ir, and Mn.

  11. Influence of transparent conductive oxides on passivation of a-Si:H/c-Si heterojunctions as studied by atomic layer deposited Al-doped ZnO

    NARCIS (Netherlands)

    Macco, B.; Deligiannis, D.; Smit, S.; Swaaij, van R.A.C.M.M.; Zeman, M.; Kessels, W.M.M.

    2014-01-01

    In silicon heterojunction solar cells, the main opportunities for efficiency gain lie in improvements of the front-contact layers. Therefore, the effect of transparent conductive oxides (TCOs) on the a-Si:H passivation performance has been investigated for Al-doped zinc oxide (ZnO:Al) layers made by

  12. Doping effect on SILAR synthesized crystalline nanostructured Cu-doped ZnO thin films grown on indium tin oxide (ITO) coated glass substrates and its characterization

    Science.gov (United States)

    Dhaygude, H. D.; Shinde, S. K.; Velhal, Ninad B.; Takale, M. V.; Fulari, V. J.

    2016-08-01

    In the present study, a novel chemical route is used to synthesize the undoped and Cu-doped ZnO thin films in aqueous solution by successive ionic layer adsorption and reaction (SILAR) method. The synthesized thin films are characterized by x-ray diffractometer (XRD), field emission scanning electron microscopy (FE-SEM), energy dispersive x-ray analysis (EDAX), contact angle goniometer and UV-Vis spectroscopic techniques. XRD study shows that the prepared films are polycrystalline in nature with hexagonal crystal structure. The change in morphology for different doping is observed in the studies of FE-SEM. EDAX spectrum shows that the thin films consist of zinc, copper and oxygen elements. Contact angle goniometer is used to measure the contact angle between a liquid and a solid interface and after detection, the nature of the films is initiated from hydrophobic to hydrophilic. The optical band gap energy for direct allowed transition ranging between 1.60-2.91 eV is observed.

  13. Electrocatalytic oxidative determination of reserpine at electrochemically functionalized single walled carbon nanotube with polyaniline

    International Nuclear Information System (INIS)

    Dar, Riyaz Ahmad; Naikoo, Gowhar Ahmad; Pitre, Krishna Sadashive

    2013-01-01

    Graphical abstract: Electrode oxidation mechanism of reserpine at PANI modified-SWCNT/CPE. -- Highlights: • Electropolymerization of polyaniline at SWCNT/CPE. • CV, EIS, CC SEM techniques were used for characterization of electrode. • Electrode showed electrocatalytic activity towards anodic oxidation of reserpine. • Oxidation process as irreversible and adsorption-controlled. • Reserpine in bark of Rauwolfia serpentina and in its pharmaceutical formulations. -- Abstract: In the present work a polyaniline film was successfully deposited by electropolymerization on single walled carbon nanotube paste electrode. The electrode was characterized using cyclic voltammetry, electrochemical impedance spectroscopy, chronocoulometry and scanning electron microscopy. The modified electrode showed electrocatalytic behaviour towards the anodic oxidation of reserpine. The adsorptive stripping voltammetric behaviour of reserpine at polyaniline film modified single walled carbon nanotube paste electrode (modified-SWCNTPE) was investigated and validated in pharmaceuticals and biological fluids by cyclic voltammetry (CV) and adsorptive stripping differential pulse voltammetry (AdSDPV) in 0.02 M phosphate buffer in the pH range of 2.5–8.5. Cyclic voltammetry has shown that the oxidation process is irreversible over the pH range studied and exhibited an adsorption-controlled behaviour. Further, the overall electrode process is mainly diffusion controlled with adsorption effects. The proposed more sensitive AdSDPV method allow quantitation over the range 0.085 μg mL −1 to 0.87 μg mL −1 with the detection limit of 0.407 ng mL −1 and has been successfully used to determine reserpine in bark of Rauwolfia serpentina and in its pharmaceutical formulations

  14. Single-Site Palladium(II) Catalyst for Oxidative Heck Reaction: Catalytic Performance and Kinetic Investigations

    Energy Technology Data Exchange (ETDEWEB)

    Duan, Hui; Li, Mengyang; Zhang, Guanghui; Gallagher, James R.; Huang, Zhiliang; Sun, Yu; Luo, Zhong; Chen, Hongzhong; Miller, Jeffrey T.; Zou, Ruqiang; Lei, Aiwen; Zhao, Yanli

    2015-01-01

    ABSTRACT: The development of organometallic single-site catalysts (SSCs) has inspired the designs of new heterogeneous catalysts with high efficiency. Nevertheless, the application of SSCs in certain modern organic reactions, such as C-C bond formation reactions, has still been less investigated. In this study, a single-site Pd(II) catalyst was developed, where 2,2'-bipyridine-grafted periodic mesoporous organosilica (PMO) was employed as the support of a Pd(II) complex. The overall performance of the single-site Pd(II) catalyst in the oxidative Heck reaction was then investigated. The investigation results show that the catalyst displays over 99% selectivity for the product formation with high reaction yield. Kinetic profiles further confirm its high catalytic efficiency, showing that the rate constant is nearly 40 times higher than that for the free Pd(II) salt. X-ray absorption spectroscopy reveals that the catalyst has remarkable lifetime and recyclability.

  15. Synthesis, characteristics and antimicrobial activity of ZnO nanoparticles

    Science.gov (United States)

    Janaki, A. Chinnammal; Sailatha, E.; Gunasekaran, S.

    2015-06-01

    The utilization of various plant resources for the bio synthesis of metallic nano particles is called green technology and it does not utilize any harmful protocols. Present study focuses on the green synthesis of ZnO nano particles by Zinc Carbonate and utilizing the bio-components of powder extract of dry ginger rhizome (Zingiber officinale). The ZnO nano crystallites of average size range of 23-26 nm have been synthesized by rapid, simple and eco friendly method. Zinc oxide nano particles were characterized by using X-ray diffraction (XRD), Scanning Electron Microscope (SEM), Energy Dispersive X-ray spectroscopy (EDX). FTIR spectra confirmed the adsorption of surfactant molecules at the surface of ZnO nanoparticles and the presence of ZnO bonding. Antimicrobial activity of ZnO nano particles was done by well diffusion method against pathogenic organisms like Klebsiella pneumonia, Staphylococcus aureus and Candida albicans and Penicillium notatum. It is observed that the ZnO synthesized in the process has the efficient antimicrobial activity.

  16. The effects of addition of citric acid on the morphologies of ZnO nanorods

    International Nuclear Information System (INIS)

    Yang Zao; Liu Quanhui; Yang Lei

    2007-01-01

    ZnO nanorods of 25-100 nm in diameter and 0.2-1 μm in length were fabricated through citric acid assisted annealing process. The microstructure of ZnO nanorods was characterized by X-ray diffraction, transmission electron microscopy, high-resolution transmission electron microscopy and field-emission scanning electron microscopy, respectively. As a result, it was found that ZnO nanorods were single crystalline and pure. The effects of the growth conditions such as addition of citric acid, annealing temperature on the morphologies of ZnO nanostructures have also been investigated. At the given temperature the length decreased but the diameter increased with addition of the mass of citric acid. With the rising of the calcining heat, the shape of ZnO changed from rod to granule for a given amount of citric acid. Finally, the mechanism for citric acid assisted annealing synthesis of the ZnO nanostructure is discussed

  17. III-nitrides on oxygen- and zinc-face ZnO substrates

    International Nuclear Information System (INIS)

    Namkoong, Gon; Burnham, Shawn; Lee, Kyoung-Keun; Trybus, Elaissa; Doolittle, W. Alan; Losurdo, Maria; Capezzuto, Pio; Bruno, Giovanni; Nemeth, Bill; Nause, Jeff

    2005-01-01

    The characteristics of III-nitrides grown on zinc- and oxygen-face ZnO by plasma-assisted molecular beam epitaxy were investigated. The reflection high-energy electron diffraction pattern indicates formation of a cubic phase at the interface between III-nitride and both Zn- and O-face ZnO. The polarity indicates that Zn-face ZnO leads to a single polarity, while O-face ZnO forms mixed polarity of III-nitrides. Furthermore, by using a vicinal ZnO substrate, the terrace-step growth of GaN was realized with a reduction by two orders of magnitude in the dislocation-related etch pit density to ∼10 8 cm -2 , while a dislocation density of ∼10 10 cm -2 was obtained on the on-axis ZnO substrates

  18. Room temperature synthesis and optical properties of small diameter (5 nm) ZnO nanorod arrays.

    Science.gov (United States)

    Cho, Seungho; Jang, Ji-Wook; Lee, Jae Sung; Lee, Kun-Hong

    2010-10-01

    We report a simple wet-chemical synthesis of ∼5 nm diameter ZnO nanorod arrays at room temperature (20 °C) and normal atmospheric pressure (1 atm) and their optical properties. They were single crystalline in nature, and grew in the [001] direction. These small diameter ZnO nanorod arrays can also be synthesized at 0 °C. Control experiments were also conducted. On the basis of the results, we propose a mechanism for the spontaneous growth of the small diameter ZnO structures. The optical properties of the 5 nm diameter ZnO nanorod arrays synthesized using this method were probed by UV-Visible diffuse reflectance spectroscopy. A clear blue-shift, relative to the absorption band from 50 nm diameter ZnO nanorod arrays, was attributed to the quantum confinement effects caused by the small nanocrystal size in the 5 nm diameter ZnO nanorods.

  19. Effect of Water on Ethanol Conversion over ZnO

    Energy Technology Data Exchange (ETDEWEB)

    Rahman, Muhammad Mahfuzur; Davidson, Stephen D.; Sun, Junming; Wang, Yong

    2015-10-01

    This work focuses on understanding the role of water on ethanol conversion over zinc oxide (ZnO). It was found that a competitive adsorption between ethanol and water occurs on ZnO, which leads to the blockage of the strong Lewis acid site by water on ZnO. As a result, both dehydration and dehydrogenation reactions are inhibited. However, the extent of inhibition for dehydration is orders of magnitude higher than that for dehydrogenation, leading to the shift of reaction pathway from ethanol dehydration to dehydrogenation. In the secondary reactions for acetaldehyde conversion, water inhibits the acetaldehyde aldol-condensation to crotonaldehyde, favoring the oxidation of acetaldehyde to acetic acid, and then to acetone via ketonization at high temperature (i.e., 400 °C).

  20. High mobility ZnO nanowires for terahertz detection applications

    International Nuclear Information System (INIS)

    Liu, Huiqiang; Peng, Rufang; Chu, Shijin; Chu, Sheng

    2014-01-01

    An oxide nanowire material was utilized for terahertz detection purpose. High quality ZnO nanowires were synthesized and field-effect transistors were fabricated. Electrical transport measurements demonstrated the nanowire with good transfer characteristics and fairly high electron mobility. It is shown that ZnO nanowires can be used as building blocks for the realization of terahertz detectors based on a one-dimensional plasmon detection configuration. Clear terahertz wave (∼0.3 THz) induced photovoltages were obtained at room temperature with varying incidence intensities. Further analysis showed that the terahertz photoresponse is closely related to the high electron mobility of the ZnO nanowire sample, which suggests that oxide nanoelectronics may find useful terahertz applications.

  1. Effects of the annealing duration of the ZnO buffer layer on structural and optical properties of ZnO rods grown by a hydrothermal process

    Energy Technology Data Exchange (ETDEWEB)

    Shin, C.M.; Lee, J.Y.; Heo, J.H.; Park, J.H.; Kim, C.R. [Department of Nano Systems Engineering, Center for Nano Manufacturing, Inje University, Obang-dong, Gimhae, Gyeongnam 621-749 (Korea, Republic of); Ryu, H., E-mail: hhryu@inje.ac.kr [Department of Nano Systems Engineering, Center for Nano Manufacturing, Inje University, Obang-dong, Gimhae, Gyeongnam 621-749 (Korea, Republic of); Chang, J.H. [Major of Nano Semiconductor, Korea Maritime University, 1 Dongsam-dong, Yeongdo-Ku, Busan 606-791 (Korea, Republic of); Son, C.S. [Department of Electronic Materials Engineering, Silla University, Gwaebeop-dong, Sasang-gu, Busan 617-736 (Korea, Republic of); Lee, W.J. [Department of Nano Engineering, Dong-Eui University, 995 Eomgwangno, Busanjin-gu, Busan 614-714 (Korea, Republic of); Tan, S.T. [Institute of Microelectronics, 11 Science Park Road, Science Park II, Singapore 117685 (Singapore); Zhao, J.L. [School of Electrical and Electronic Engineering, Nanyang Technological University, Nanyang Avenue, Singapore 639798 (Singapore); Sun, X.W. [Institute of Microelectronics, 11 Science Park Road, Science Park II, Singapore 117685 (Singapore); School of Electrical and Electronic Engineering, Nanyang Technological University, Nanyang Avenue, Singapore 639798 (Singapore)

    2009-07-30

    In this study, the effects of the annealing duration of a zinc oxide (ZnO) buffer layer on structural and optical properties of ZnO rods grown by a hydrothermal process are discussed. A ZnO buffer layer was deposited on p-type Si (1 1 1) substrates by the metal organic chemical vapor deposition (MOCVD) method. After that, ZnO rods were grown on the ZnO-buffer/Si (1 1 1) substrate by a hydrothermal process. In order to determine the optimum annealing duration of the buffer layer for the growth of ZnO rods, durations ranging from 0.5 to 30 min were tried. The morphology and crystal structure of the ZnO/ZnO-buffer/Si (1 1 1) were measured by field emission scanning electron microscopy (FE-SEM) and x-ray diffraction (XRD). The optical properties were investigated by photoluminescence (PL) measurement.

  2. Analysis of electrical and microstructural characteristics of a ZnO-based varistor doped with rare earth oxide; Analise das caracteristicas microestruturais e eletricas de um varistor a base de ZnO dopado com oxidos de terras raras

    Energy Technology Data Exchange (ETDEWEB)

    Andrade, J.M. de; Dias, R.; Furtado, J.G. de M. [Centro de Pesquisas de Energia Eletrica (CEPEL), Rio de Janeiro, RJ (Brazil); Assuncao, F.C.R. [Pontificia Univ. Catolica do Rio de Janeiro (PUC/Rio), RJ (Brazil)

    2010-07-01

    Varistor is a semiconductor device, used in the protection of electrical systems, characterized to have a high no-linear electric resistance. Its properties are directly dependents of its chemical composition and microstructural characteristics. In this work were analyzed microstructural and electrical characteristics of a ZnO-based varistor doped with rare earth oxide, with chemical composition (mol%) 98,5.ZnO - 0,3.Pr{sub 6}O{sub 11} - 0,2.Dy{sub 2}O{sub 3} - 0,9.Co{sub 2}O{sub 3} - 0,1.Cr{sub 2}O{sub 3}. X-ray diffraction for phase characterization, scanning electron microscopy and energy dispersive X-ray spectroscopy were used for microstructural analysis. Measurement of average grain size and electrical and dielectric characteristics complete the characterization. The results show the formation of biphasic microstructure and with high densification, presenting relevant varistors characteristics but that would need improvements.(author)

  3. Evidence for single metal two electron oxidative addition and reductive elimination at uranium.

    Science.gov (United States)

    Gardner, Benedict M; Kefalidis, Christos E; Lu, Erli; Patel, Dipti; McInnes, Eric J L; Tuna, Floriana; Wooles, Ashley J; Maron, Laurent; Liddle, Stephen T

    2017-12-01

    Reversible single-metal two-electron oxidative addition and reductive elimination are common fundamental reactions for transition metals that underpin major catalytic transformations. However, these reactions have never been observed together in the f-block because these metals exhibit irreversible one- or multi-electron oxidation or reduction reactions. Here we report that azobenzene oxidises sterically and electronically unsaturated uranium(III) complexes to afford a uranium(V)-imido complex in a reaction that satisfies all criteria of a single-metal two-electron oxidative addition. Thermolysis of this complex promotes extrusion of azobenzene, where H-/D-isotopic labelling finds no isotopomer cross-over and the non-reactivity of a nitrene-trap suggests that nitrenes are not generated and thus a reductive elimination has occurred. Though not optimally balanced in this case, this work presents evidence that classical d-block redox chemistry can be performed reversibly by f-block metals, and that uranium can thus mimic elementary transition metal reactivity, which may lead to the discovery of new f-block catalysis.

  4. First-principles calculation on electronic properties of zinc oxide by zinc–air system

    Directory of Open Access Journals (Sweden)

    Ahmad Azmin Mohamad

    2017-07-01

    Full Text Available First-principles calculations are performed to study the electronic properties of zinc oxide (ZnO formed on an anode after discharging a Zn–air system. Prior to calculation, the ZnO is characterised by X-ray diffraction using Rietveld refinement. Diffracted patterns proved the formation of single phase ZnO, while Rietveld analysis shows that the ZnO has a hexagonal wurtzite structure with lattice parameters, a = 3.244 and c = 5.199 Å. Geometry optimisation of the hexagonal wurtzite structure of the ZnO is performed using various exchange–correlation energy functionals. The local density approximation functional method is used to explain the structure, electronic band structure and density of state properties of hexagonal ZnO. The calculated energy band gap was 0.75 eV while the density of states reveals that the O 2p (the top valence band and Zn 4s (the bottom conduction band states domination.

  5. Chronic toxicity of ZnO nanoparticles, non-nano ZnO and ZnCl2 to Folsomia candida (Collembola) in relation to bioavailability in soil

    International Nuclear Information System (INIS)

    Kool, Pauline L.; Diez Ortiz, Maria; Gestel, Cornelis A.M. van

    2011-01-01

    The chronic toxicity of zinc oxide nanoparticles (ZnO-NP) to Folsomia candida was determined in natural soil. To unravel the contribution of particle size and free zinc to NP toxicity, non-nano ZnO and ZnCl 2 were also tested. Zinc concentrations in pore water increased with increasing soil concentrations, with Freundlich sorption constants K f of 61.7, 106 and 96.4 l/kg (n = 1.50, 1.34 and 0.42) for ZnO-NP, non-nano ZnO and ZnCl 2 respectively. Survival of F. candida was not affected by ZnO-NP and non-nano ZnO at concentrations up to 6400 mg Zn/kg d.w. Reproduction was dose-dependently reduced with 28-d EC50s of 1964, 1591 and 298 mg Zn/kg d.w. for ZnO-NP, non-nano ZnO and ZnCl 2 , respectively. The difference in EC50s based on measured pore water concentrations was small (7.94-16.8 mg Zn/l). We conclude that zinc ions released from NP determine the observed toxic effects rather than ZnO particle size. - Highlights: → ZnO nanoparticles and non-nano ZnO were equally toxic to Folsomia candida in soil. → Pore water from soil spiked with ZnO nanoparticles showed saturation with zinc suggesting aggregation. → Pore water based EC50 values for ZnO nanoparticles and ZnCl 2 were similar. → ZnO nanoparticle toxicity in soil was most probably due to Zn dissolution from the nanoparticles. - ZnO nanoparticle toxicity to springtails in soil can be explained from Zn dissolution but not from particle size.

  6. High Quality Zinc Oxide Thin films and Nanostructures Prepared by Pulsed Laser Deposition for Photodetectors

    KAUST Repository

    Flemban, Tahani H.

    2017-12-11

    Zinc oxide (ZnO) semiconductors have been utilized by many researchers, due to its unique properties beneficial for functional devices. In particular, gadolinium (Gd)–doped ZnO exhibits high ferromagnetic and electrical properties, which is attributed to defect/impurity bands mediated by Gd dopants. In this dissertation, I study the effects of Gd concentration, oxygen pressure using pulsed laser deposition (PLD), and thermal annealing on the optical and structural properties of undoped and Gd-doped ZnO films and nanostructures. Moreover, as the growth of practical ZnO nanostructures-based devices without catalyst, while presently challenging, is highly important for many applications. Thus, for the first time, a novel method is developed for growing well aligned ZnO nanorods (NRs) by optimizing PLD conditions using Gd-doped ZnO target without any catalyst in a single step. This study shows that, both the lattice orientation of the substrate and the Gd characteristics are significant in enhancing the NR growth. Our findings reveal that precise control of the NR density can be achieved by changing the oxygen partial pressure. Furthermore, due to the Gd incorporation, these NRs possess favorable electrical properties with a significant mobility of 177 cm2 (V.s)-1 compared to that reported in literature. Nonetheless significant challenges need to be overcome to achieve reproducible and stable p-type ZnO for commercial applications. Hence, several attempts based on n-type ZnO grown on foreign p-type substrates were made to achieve high-performance devices and overcome the issues arising when p-type doped ZnO is employed. Moreover, Growth of ZnO nanostructures on a foreign p-type substrates does not require a lattice-matched p-type substrate. Thus, for the first time, PLD conditions are improved to grow high quality ZnO nanotubes (NTs) with high optical, structural and electrical properties on a p-type Si (100) substrate without catalyst for high-performance devices. A

  7. Effect of Mg doping in ZnO buffer layer on ZnO thin film devices for electronic applications

    Science.gov (United States)

    Giri, Pushpa; Chakrabarti, P.

    2016-05-01

    Zinc Oxide (ZnO) thin films have been grown on p-silicon (Si) substrate using magnesium doped ZnO (Mg: ZnO) buffer layer by radio-frequency (RF) sputtering method. In this paper, we have optimized the concentration of Mg (0-5 atomic percent (at. %)) ZnO buffer layer to examine its effect on ZnO thin film based devices for electronic and optoelectronic applications. The crystalline nature, morphology and topography of the surface of the thin film have been characterized. The optical as well as electrical properties of the active ZnO film can be tailored by varying the concentration of Mg in the buffer layer. The crystallite size in the active ZnO thin film was found to increase with the Mg concentration in the buffer layer in the range of 0-3 at. % and subsequently decrease with increasing Mg atom concentration in the ZnO. The same was verified by the surface morphology and topography studies carried out with scanning electron microscope (SEM) and atomic electron microscopy (AFM) respectively. The reflectance in the visible region was measured to be less than 80% and found to decrease with increase in Mg concentration from 0 to 3 at. % in the buffer region. The optical bandgap was initially found to increase from 3.02 eV to 3.74 eV by increasing the Mg content from 0 to 3 at. % but subsequently decreases and drops down to 3.43 eV for a concentration of 5 at. %. The study of an Au:Pd/ZnO Schottky diode reveals that for optimum doping of the buffer layer the device exhibits superior rectifying behavior. The barrier height, ideality factor, rectification ratio, reverse saturation current and series resistance of the Schottky diode were extracted from the measured current voltage (I-V) characteristics.

  8. Sintesis de ceramicos de ZnO dopados con praseodimio y cobalto

    Directory of Open Access Journals (Sweden)

    Ana Milena Cruz

    2003-06-01

    Full Text Available Zinc oxide, ZnO, is a very interesting compound in science and electronic ceramics technology. ZnO ceramics containing some additives were reported to show varistor action with excellent nonlinearity in current - voltage characteristics. However, investigations were restricted to the ZnO - Bi2O3 ceramic system. Other type of varistor, which contains praseodymium oxide, also present nonlinear behaviour. In this work, results obtained in the synthesis Zn-Pr-Co powder are shown. In order to determine and control the several stages of the chemical method, potentiometric titration was used. The solid phase obtained was pressed and sintered.

  9. Aeration Strategies To Mitigate Nitrous Oxide Emissions from Single-Stage Nitritation/Anammox Reactors

    DEFF Research Database (Denmark)

    Domingo Felez, Carlos; Mutlu, A. Gizem; Jensen, Marlene Mark

    2014-01-01

    Autotrophic nitrogen removal is regarded as a resource efficient process to manage nitrogen-rich residual streams. However, nitrous oxide emissions of these processes are poorly documented and strategies to mitigate emissions unknown. In this study, two sequencing batch reactors performing single...... was noted when the duration of aeration was increased while decreasing air flow rate (10.9 +/- 3.2% Delta N2O/Delta TN). The extant ammonium oxidation activity (mgNH(4)(+)-N/gVSS.min) positively correlated with the specific N2O production rate (mgN(2)O-N/gVSS.min) of the systems. Operating under conditions......-stage nitritation/anammox were operated under different aeration strategies, gradually adjusted over six months. At constant but limiting oxygen loading, synthetic reject water was fed (0.75g-N/L.d) and high nitrogen removal efficiencies (83 +/- 5 and 88 +/- 2%) obtained. Dynamics of liquid phase nitrous (N2O...

  10. Enhancement of Inverted Polymer Solar Cells Performances Using Cetyltrimethylammonium-Bromide Modified ZnO

    Directory of Open Access Journals (Sweden)

    Chung-Kai Wu

    2018-03-01

    Full Text Available In this study, the performance and stability of inverted bulk heterojunction (BHJ polymer solar cells (PSCs is enhanced by doping zinc oxide (ZnO with 0–6 wt % cetyltrimethylammonium bromide (CTAB in the sol-gel ZnO precursor solution. The power conversion efficiency (PCE of the optimized 3 wt % CTAB-doped ZnO PSCs was increased by 9.07%, compared to a PCE of 7.31% for the pristine ZnO device. The 0–6 wt % CTAB-doped ZnO surface roughness was reduced from 2.6 to 1 nm and the number of surface defects decreased. The X-ray photoelectron spectroscopy binding energies of Zn 2p3/2 (1021.92 eV and 2p1/2 (1044.99 eV shifted to 1022.83 and 1045.88 eV, respectively, which is related to strong chemical bonding via bromide ions (Br− that occupy oxygen vacancies in the ZnO lattice, improving the PCE of PSCs. The concentration of CTAB in ZnO significantly affected the work function of PSC devices; however, excessive CTAB increased the work function of the ZnO layer, resulting from the aggregation of CTAB molecules. In addition, after a 120-hour stability test in the atmosphere with 40% relative humidity, the inverted device based on CTAB-doped ZnO retained 92% of its original PCE and that based on pristine ZnO retained 68% of its original PCE. The obtained results demonstrate that the addition of CTAB into ZnO can dramatically influence the optical, electrical, and morphological properties of ZnO, enhancing the performance and stability of BHJ PSCs.

  11. Recent progress on doped ZnO nanostructures for visible-light photocatalysis

    International Nuclear Information System (INIS)

    Samadi, Morasae; Zirak, Mohammad; Naseri, Amene; Khorashadizade, Elham; Moshfegh, Alireza Z.

    2016-01-01

    Global environmental pollution and energy supply demand have been regarded as important concerns in recent years. Metal oxide semiconductor photocatalysts is a promising approach to apply environmental remediation as well as fuel generation from water splitting and carbon dioxide reduction. ZnO nanostructures have been shown promising photocatalytic activities due to their non-toxic, inexpensive, and highly efficient nature. However, its wide band gap hinders photo-excitation for practical photocatalytic applications under solar light as an abundant, clean and safe energy source. To overcome this barrier, many strategies have been developed in the last decade to apply ZnO nanostructured photocatalysts under visible light. In this review, we have classified different approaches to activate ZnO as a photocatalyst in visible-light spectrum. Utilization of various nonmetals, transition metals and rare-earth metals for doping in ZnO crystal lattice to create visible-light-responsive doped ZnO photocatalysts is discussed. Generation of localized energy levels within the gap in doped ZnO nanostructures has played an important role in effective photocatalytic reaction under visible-light irradiation. The effect of dopant type, ionic size and its concentration on the crystal structure, electronic property and morphology of doped ZnO with a narrower band gap is reviewed systematically. Finally, a comparative study is performed to evaluate two classes of metals and nonmetals as useful dopants for ZnO nanostructured photocatalysts under visible light. - Highlights: • Metals and nonmetals used as a dopant to shift ZnO band gap toward visible-light. • Modification of electronic structure played a crucial role in doped ZnO activity. • Correlation between dopant's characteristics and ZnO visible activity was reviewed. • Photo-degradation of doped ZnO was studied and compared for different dopants.

  12. Recent progress on doped ZnO nanostructures for visible-light photocatalysis

    Energy Technology Data Exchange (ETDEWEB)

    Samadi, Morasae; Zirak, Mohammad [Department of Physics, Sharif University of Technology, P.O. Box 11555-9161, Tehran (Iran, Islamic Republic of); Naseri, Amene [Institute for Nanoscience and Nanotechnology, Sharif University of Technology, P.O. Box 11365-8639, Tehran (Iran, Islamic Republic of); Khorashadizade, Elham [Department of Physics, Sharif University of Technology, P.O. Box 11555-9161, Tehran (Iran, Islamic Republic of); Moshfegh, Alireza Z., E-mail: moshfegh@sharif.edu [Department of Physics, Sharif University of Technology, P.O. Box 11555-9161, Tehran (Iran, Islamic Republic of); Institute for Nanoscience and Nanotechnology, Sharif University of Technology, P.O. Box 11365-8639, Tehran (Iran, Islamic Republic of)

    2016-04-30

    Global environmental pollution and energy supply demand have been regarded as important concerns in recent years. Metal oxide semiconductor photocatalysts is a promising approach to apply environmental remediation as well as fuel generation from water splitting and carbon dioxide reduction. ZnO nanostructures have been shown promising photocatalytic activities due to their non-toxic, inexpensive, and highly efficient nature. However, its wide band gap hinders photo-excitation for practical photocatalytic applications under solar light as an abundant, clean and safe energy source. To overcome this barrier, many strategies have been developed in the last decade to apply ZnO nanostructured photocatalysts under visible light. In this review, we have classified different approaches to activate ZnO as a photocatalyst in visible-light spectrum. Utilization of various nonmetals, transition metals and rare-earth metals for doping in ZnO crystal lattice to create visible-light-responsive doped ZnO photocatalysts is discussed. Generation of localized energy levels within the gap in doped ZnO nanostructures has played an important role in effective photocatalytic reaction under visible-light irradiation. The effect of dopant type, ionic size and its concentration on the crystal structure, electronic property and morphology of doped ZnO with a narrower band gap is reviewed systematically. Finally, a comparative study is performed to evaluate two classes of metals and nonmetals as useful dopants for ZnO nanostructured photocatalysts under visible light. - Highlights: • Metals and nonmetals used as a dopant to shift ZnO band gap toward visible-light. • Modification of electronic structure played a crucial role in doped ZnO activity. • Correlation between dopant's characteristics and ZnO visible activity was reviewed. • Photo-degradation of doped ZnO was studied and compared for different dopants.

  13. ZNO and AG-ZNO crystals: synthesis, characterization, and application in heterogeneous photocatalysis

    Directory of Open Access Journals (Sweden)

    Adriana Campano Lucilha

    2016-05-01

    Full Text Available ZnO and Ag-ZnO were synthesized in a simple and efficient manner by thermal decomposition of zinc oxalate and silver/zinc mixed oxalate. The influence of the addition of metallic silver on ZnO particles and the effect of temperature in the thermal treatment were investigated. The samples were characterized by thermogravimetric analysis, Raman, X-ray diffraction, scanning electron microscopy, energy dispersive X-ray spectroscopy, specific surface area (Brunauer-Emmett-Teller and diffuse reflectance spectroscopy. The photocatalytic activity of these materials in the decolorization of direct red 23 diazo dye was studied. The complete conversion into oxides from oxalates at lower temperatures was determinant in the photocatalytic efficiency of both the oxides. The presence of silver in zinc oxide, treated at 400 °C, more than doubled the rate constant of diazo dye decolorization (6.87×10-3 min-1 with respect to ZnO, treated at 600 °C, resulting in 3.07×10-3 min-1 under UV irradiation at 30 °C.

  14. Performance of planar single cell lanthanum gallate based solid oxide fuel cells

    Energy Technology Data Exchange (ETDEWEB)

    Maffei, N.; Kuriakose, A.K. [Materials Technology Labs., CANMET, Natural Resources Canada, Ottawa, ON (Canada)

    1998-09-01

    A novel synthesis of high purity, single phase strontium-magnesium doped lanthanum gallate through a nitrate route is described. The prepared powder is formed into planar monolithic elements by uniaxial pressing followed by isostatic pressing and sintering. XRD analysis of the sintered elements reveal no detectable secondary phases. The performance of the electrolyte in solid oxide fuel cells (SOFC) with three different anode/cathode combinations tested at 700 C with respect to the J-V and power density is reported. The data show that the characteristics of this SOFC are strongly dependent on the particular anode/cathode system chosen. (orig.)

  15. Performance of planar single cell lanthanum gallate based solid oxide fuel cells

    Science.gov (United States)

    Maffei, N.; Kuriakose, A. K.

    A novel synthesis of high purity, single phase strontium-magnesium doped lanthanum gallate through a nitrate route is described. The prepared powder is formed into planar monolithic elements by uniaxial pressing followed by isostatic pressing and sintering. XRD analysis of the sintered elements reveal no detectable secondary phases. The performance of the electrolyte in solid oxide fuel cells (SOFC) with three different anode/cathode combinations tested at 700°C with respect to the J- V and power density is reported. The data show that the characteristics of this SOFC are strongly dependent on the particular anode/cathode system chosen.

  16. Transparent and conductive polyethylene oxide film by the introduction of individualized single-walled carbon nanotubes.

    Science.gov (United States)

    Jung, Yong Chae; Muramatsu, Hiroyuki; Park, Ki Chul; Shimamoto, Daisuke; Kim, Jin Hee; Hayashi, Takuya; Song, Sung Moo; Kim, Yoong Ahm; Endo, Morinobu; Dresselhaus, Mildred S

    2009-12-16

    It is demonstrated that an optically transparent and electrically conductive polyethylene oxide (PEO) film is fabricated by the introduction of individualized single-walled carbon nanotubes (SWNTs). The incorporated SWNTs in the PEO film sustain their intrinsic electronic and optical properties and, in addition, the intrinsic properties of the polymer matrix are retained. The individualized SWNTs with smaller diameter provide high transmittance as well as good electrical conductivity in PEO films. Copyright © 2009 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  17. Non-oxidic nanoscale composites: single-crystalline titanium carbide nanocubes in hierarchical porous carbon monoliths.

    Science.gov (United States)

    Sonnenburg, Kirstin; Smarsly, Bernd M; Brezesinski, Torsten

    2009-05-07

    We report the preparation of nanoscale carbon-titanium carbide composites with carbide contents of up to 80 wt%. The synthesis yields single-crystalline TiC nanocubes 20-30 nm in diameter embedded in a hierarchical porous carbon matrix. These composites were generated in the form of cylindrical monoliths but can be produced in various shapes using modern sol-gel and nanocasting methods in conjunction with carbothermal reduction. The monolithic material is characterized by a combination of microscopy, diffraction and physisorption. Overall, the results presented in this work represent a concrete design template for the synthesis of non-oxidic nanoscale composites with high surface areas.

  18. ZnO processing for integrated optic sensors

    NARCIS (Netherlands)

    Horsthuis, Winfried H.G.

    1986-01-01

    ZnO thin films were sputter deposited onto oxidized silicon wafers. The film quality increased with increasing applied r.f. power. Characterization of the films was performed by measurements of the attenuation of the transverse electric TE0 optical guided mode. For an applied r.f. power of 2000 W,

  19. Recent advances in ZnO nanostructures and thin films for biosensor applications: Review

    International Nuclear Information System (INIS)

    Arya, Sunil K.; Saha, Shibu; Ramirez-Vick, Jaime E.; Gupta, Vinay; Bhansali, Shekhar; Singh, Surinder P.

    2012-01-01

    Graphical abstract: ZnO nanostructures have shown binding of biomolecules in desired orientation with improved conformation and high biological activity, resulting in enhanced sensing characteristics. Furthermore, their compatibility with complementary metal oxide semiconductor technology for constructing integrated circuits makes them suitable candidate for future small integrated biosensor devices. This review highlights various approaches to synthesize ZnO nanostructures and thin films, and their applications in biosensor technology. Highlights: ► This review highlights various approaches to synthesize ZnO nanostructures and thin films. ► Article highlights the importance of ZnO nanostructures as biosensor matrix. ► Article highlights the advances in various biosensors based on ZnO nanostructures. ► Article describes the potential of ZnO based biosensor for new generation healthcare devices. - Abstract: Biosensors have shown great potential for health care and environmental monitoring. The performance of biosensors depends on their components, among which the matrix material, i.e., the layer between the recognition layer of biomolecule and transducer, plays a crucial role in defining the stability, sensitivity and shelf-life of a biosensor. Recently, zinc oxide (ZnO) nanostructures and thin films have attracted much interest as materials for biosensors due to their biocompatibility, chemical stability, high isoelectric point, electrochemical activity, high electron mobility, ease of synthesis by diverse methods and high surface-to-volume ratio. ZnO nanostructures have shown the binding of biomolecules in desired orientations with improved conformation and high biological activity, resulting in enhanced sensing characteristics. Furthermore, compatibility with complementary metal oxide semiconductor technology for constructing integrated circuits makes ZnO nanostructures suitable candidate for future small integrated biosensor devices. This review

  20. Recent advances in ZnO nanostructures and thin films for biosensor applications: Review

    Energy Technology Data Exchange (ETDEWEB)

    Arya, Sunil K., E-mail: sunilarya333@gmail.com [Bioelectronics Program, Institute of Microelectronics, A-Star 11 Science Park Road, Singapore Science Park II, Singapore 117685 (Singapore); Saha, Shibu [Department of Physics and Astrophysics, University of Delhi, Delhi 110007 (India); Ramirez-Vick, Jaime E. [Engineering Science and Materials Department, University of Puerto Rico, Mayaguez, PR 00681 (United States); Gupta, Vinay [Department of Physics and Astrophysics, University of Delhi, Delhi 110007 (India); Bhansali, Shekhar [Department of Electrical and Computer Engineering, Florida International University, Miami, FL (United States); Singh, Surinder P., E-mail: singh.uprm@gmail.com [National Physical Laboratory, Dr K.S. Krishnan Marg, New Delhi 110012 (India)

    2012-08-06

    Graphical abstract: ZnO nanostructures have shown binding of biomolecules in desired orientation with improved conformation and high biological activity, resulting in enhanced sensing characteristics. Furthermore, their compatibility with complementary metal oxide semiconductor technology for constructing integrated circuits makes them suitable candidate for future small integrated biosensor devices. This review highlights various approaches to synthesize ZnO nanostructures and thin films, and their applications in biosensor technology. Highlights: Black-Right-Pointing-Pointer This review highlights various approaches to synthesize ZnO nanostructures and thin films. Black-Right-Pointing-Pointer Article highlights the importance of ZnO nanostructures as biosensor matrix. Black-Right-Pointing-Pointer Article highlights the advances in various biosensors based on ZnO nanostructures. Black-Right-Pointing-Pointer Article describes the potential of ZnO based biosensor for new generation healthcare devices. - Abstract: Biosensors have shown great potential for health care and environmental monitoring. The performance of biosensors depends on their components, among which the matrix material, i.e., the layer between the recognition layer of biomolecule and transducer, plays a crucial role in defining the stability, sensitivity and shelf-life of a biosensor. Recently, zinc oxide (ZnO) nanostructures and thin films have attracted much interest as materials for biosensors due to their biocompatibility, chemical stability, high isoelectric point, electrochemical activity, high electron mobility, ease of synthesis by diverse methods and high surface-to-volume ratio. ZnO nanostructures have shown the binding of biomolecules in desired orientations with improved conformation and high biological activity, resulting in enhanced sensing characteristics. Furthermore, compatibility with complementary metal oxide semiconductor technology for constructing integrated circuits makes ZnO

  1. Dielectric breakdown and healing of anodic oxide films on aluminium under single pulse anodizing

    International Nuclear Information System (INIS)

    Sah, Santosh Prasad; Tatsuno, Yasuhiro; Aoki, Yoshitaka; Habazaki, Hiroki

    2011-01-01

    Research highlights: → We examined dielectric breakdown of anodic alumina by single pulse anodizing. → Current transients and morphology of discharge channels are dependent upon electrolyte and voltage. → There is a good correlation between current transient and morphology of discharge channel. → Healing of open discharge pores occurs in alkaline silicate, but not in pentaborate electrolyte. - Abstract: Single pulse anodizing of aluminium micro-electrode has been employed to study the behaviour of dielectric breakdown and subsequent oxide formation on aluminium in alkaline silicate and pentaborate electrolytes. Current transients during applying pulse voltage have been measured, and surface has been observed by scanning electron microscopy. Two types of current transients are observed, depending on the electrolyte and applied voltage. There is a good correlation between the current transient behaviour and the shape of discharge channels. In alkaline silicate electrolyte, circular open pores are healed by increasing the pulse width, but such healing is not obvious in pentaborate electrolyte.

  2. High temperature oxidation behavior of aluminide on a Ni-based single crystal superalloy in different surface orientations

    Institute of Scientific and Technical Information of China (English)

    Fahamsyah H.Latief; Koji Kakehi; El-Sayed M.Sherif

    2014-01-01

    An investigation on oxidation behavior of coated Ni-based single crystal superalloy in different surface orientations has been carried out at 1100 1C. It has been found that the {100} surface shows a better oxidation resistance than the {110} one, which is attributed that the {110}surface had a slightly higher oxidation rate when compared to the {100} surface. The experimental results also indicated that the anisotropic oxidation behavior took place even with a very small difference in the oxidation rates that was found between the two surfaces. The differences of the topologically close packed phase amount and its penetration depth between the two surfaces, including the ratio of α-Al2O3 after 500 h oxidation, were responsible for the oxidation anisotropy.

  3. CuO and ZnO nanoparticles: phytotoxicity, metal speciation, and induction of oxidative stress in sand-grown wheat

    Science.gov (United States)

    Dimkpa, Christian O.; McLean, Joan E.; Latta, Drew E.; Manangón, Eliana; Britt, David W.; Johnson, William P.; Boyanov, Maxim I.; Anderson, Anne J.

    2012-09-01

    Metal oxide nanoparticles (NPs) are reported to impact plant growth in hydroponic systems. This study describes the impact of commercial CuO (release did not account for the changes in plant growth. Bioaccumulation of Cu, mainly as CuO and Cu(I)-sulfur complexes, and Zn as Zn-phosphate was detected in the shoots of NP-challenged plants. Total Cu and Zn levels in shoot were similar whether NP or bulk materials were used. Oxidative stress in the NP-treated plants was evidenced by increased lipid peroxidation and oxidized glutathione in roots and decreased chlorophyll content in shoots; higher peroxidase and catalase activities were present in roots. These findings correlate with the NPs causing increased production of reactive oxygen species. The accumulation of Cu and Zn from NPs into edible plants has relevance to the food chain.

  4. Sodium doping in ZnO crystals

    Science.gov (United States)

    Parmar, N. S.; Lynn, K. G.

    2015-01-01

    ZnO bulk single crystals were doped with sodium by thermal diffusion. Positron annihilations spectroscopy confirms the filling of zinc vacancies, to >6 μm deep in the bulk. Secondary-ion mass spectrometry measurement shows the diffusion of sodium up to 8 μm with concentration (1-3.5) × 1017 cm-3. Broad photoluminescence excitation peak at 3.1 eV, with onset appearance at 3.15 eV in Na:ZnO, is attributed to an electronic transition from a NaZn level at ˜(220-270) meV to the conduction band. Resistivity in Na doped ZnO crystals increases up to (4-5) orders of magnitude at room temperature.

  5. Sodium doping in ZnO crystals

    International Nuclear Information System (INIS)

    Parmar, N. S.; Lynn, K. G.

    2015-01-01

    ZnO bulk single crystals were doped with sodium by thermal diffusion. Positron annihilations spectroscopy confirms the filling of zinc vacancies, to >6 μm deep in the bulk. Secondary-ion mass spectrometry measurement shows the diffusion of sodium up to 8 μm with concentration (1–3.5) × 10 17  cm −3 . Broad photoluminescence excitation peak at 3.1 eV, with onset appearance at 3.15 eV in Na:ZnO, is attributed to an electronic transition from a Na Zn level at ∼(220–270) meV to the conduction band. Resistivity in Na doped ZnO crystals increases up to (4–5) orders of magnitude at room temperature

  6. Sodium doping in ZnO crystals

    Energy Technology Data Exchange (ETDEWEB)

    Parmar, N. S., E-mail: nparmar@wsu.edu; Lynn, K. G. [Center for Materials Research, Washington State University, Pullman, Washington 99164-2711 (United States)

    2015-01-12

    ZnO bulk single crystals were doped with sodium by thermal diffusion. Positron annihilations spectroscopy confirms the filling of zinc vacancies, to >6 μm deep in the bulk. Secondary-ion mass spectrometry measurement shows the diffusion of sodium up to 8 μm with concentration (1–3.5) × 10{sup 17 }cm{sup −3}. Broad photoluminescence excitation peak at 3.1 eV, with onset appearance at 3.15 eV in Na:ZnO, is attributed to an electronic transition from a Na{sub Zn} level at ∼(220–270) meV to the conduction band. Resistivity in Na doped ZnO crystals increases up to (4–5) orders of magnitude at room temperature.

  7. Low temperature fabrication of ZnO compact layer for high performance plastic dye-sensitized ZnO solar cells

    International Nuclear Information System (INIS)

    Hu Fangyi; Xia Yujing; Guan Zisheng; Yin Xiong; He Tao

    2012-01-01

    Highlights: ► ZnO compact layer is prepared via simple electrochemical method at low temperature. ► Compact layer can effectively block electron transfer from TCO to electrolyte. ► DSC PCE is improved by 17% when ZnO compact layer is introduced. ► Plastic DSCs with ZnO compact layer show a PCE of 3.29% under AM1.5 100 mW cm −2 . ► The above efficiency is comparable to that with high temperature sintering step. - Abstract: ZnO compact layer has been fabricated on transparent conducting oxide glass and plastic polymer substrates at low temperature via electrodeposition. The results of dark current and cyclic voltammetric measurements demonstrate that the compact layer can effectively reduce the short circuit from transparent conducting oxide to electrolyte in dye-sensitized ZnO solar cells, leading to an increase of open-circuit photovoltage and fill factor of the devices and, thereby, the power conversion efficiency. The resultant plastic dye-sensitized ZnO solar cell presents an efficiency of 3.29% under illumination of 100 mW cm −2 , AM 1.5G. This indicates that electrodeposition is a viable method to fabricate ZnO compact layer for high performance flexible devices.

  8. Stable and easily sintered BaCe0.5Zr0.3Y0.2O3−δ electrolytes using ZnO and Na2CO3 additives for protonic oxide fuel cells

    International Nuclear Information System (INIS)

    Li, Yong; Guo, Ruisong; Wang, Chao; Liu, Yu; Shao, Zongping; An, Jing; Liu, Chongwei

    2013-01-01

    Highlights: ► Sintering temperature of BCZY-Z pellets was reduced by adding ZnO and Na 2 CO 3 . ► Chemical stability of BCZY-Z towards CO 2 was improved with Na 2 CO 3 addition. ► Good chemical stability against boiling water was observed for BCZY-Z-C2 sample. ► The electrical conductivity is 7.68 × 10 −3 S cm −1 for BCZY-Z-C2 sample at 700 °C. ► An anode-supported POFC delivered a peak output 302 mW cm 2 at 700 °C. -- Abstract: BaCe 0.5 Zr 0.3 Y 0.2 O 3−δ (BCZY) based composite electrolyte materials were fabricated with ZnO sintering aid (BCZY-Z). The effects of Na 2 CO 3 modification on sintering behavior, chemical stability and electrochemical performance were systematically investigated. The X-ray diffraction patterns indicate that the specimens with Na 2 CO 3 addition possessed a single perovskite structure after sintering at 1320 °C for 2 h. The linear shrinkage of 0.5 mol% Na 2 CO 3 -modified BCZY-Z sample (BCZY-Z-C2) was about 17.5%, higher than that without Na 2 CO 3 addition (14.9%). Energy dispersive spectrometer shows that Na and C elements still existed and mainly distributed along the grain boundaries. Reactivities with carbon dioxide and boiling water of BCZY-Z and Na 2 CO 3 -modified BCZY-Z samples were also evaluated and good chemical stability was observed for Na 2 CO 3 -modified BCZY-Z samples. A conductivity of 7.68 × 10 −3 S cm −1 for BCZY-Z-C2 was obtained at 700 °C in 3% wet hydrogen atmosphere. An anode-supported fuel cell with thin-film BCZY-Z-C2 as electrolyte was fabricated. The fuel cell delivered a peak power density of 302 mW cm 2 and interface resistance value of 0.08 Ω cm 2 at 700 °C

  9. Electrical properties of fluorine-doped ZnO nanowires formed by biased plasma treatment

    Science.gov (United States)

    Wang, Ying; Chen, Yicong; Song, Xiaomeng; Zhang, Zhipeng; She, Juncong; Deng, Shaozhi; Xu, Ningsheng; Chen, Jun

    2018-05-01

    Doping is an effective method for tuning electrical properties of zinc oxide nanowires, which are used in nanoelectronic devices. Here, ZnO nanowires were prepared by a thermal oxidation method. Fluorine doping was achieved by a biased plasma treatment, with bias voltages of 100, 200, and 300 V. Transmission electron microscopy indicated that the nanowires treated at bias voltages of 100 and 200 V featured low crystallinity. When the bias voltage was 300 V, the nanowires showed single crystalline structures. Photoluminescence measurements revealed that concentrations of oxygen and surface defects decreased at high bias voltage. X-ray photoelectron spectroscopy suggested that the F content increased as the bias voltage was increased. The conductivity of the as-grown nanowires was less than 103 S/m; the conductivity of the treated nanowires ranged from 1 × 104-5 × 104, 1 × 104-1 × 105, and 1 × 103-2 × 104 S/m for bias voltage treatments at 100, 200, and 300 V, respectively. The conductivity improvements of nanowires formed at bias voltages of 100 and 200 V, were attributed to F-doping, defects and surface states. The conductivity of nanowires treated at 300 V was attributed to the presence of F ions. Thus, we provide a method of improving electrical properties of ZnO nanowires without altering their crystal structure.

  10. Theoretical study on the photocatalytic properties of graphene oxide with single Au atom adsorption

    Science.gov (United States)

    Ju, Lin; Dai, Ying; Wei, Wei; Li, Mengmeng; Jin, Cui; Huang, Baibiao

    2018-03-01

    The photocatalytic properties of graphene oxide (GO) with single Au atom adsorption are studied via the first-principles calculations based on the density functional theory. The present study addresses the origin of enhancement in photocatalytic efficiency of GO derived from single Au atom depositing. Compared with the clean one, the work function of the single Au atom adsorbed GO is lowered due to the charge transfer from Au to GO, indicating enhanced surface activity. The Au atom plays as an electron trapping center and a mediating role in charge transfer from photon excited GO to target species. The photogenerated electron-hole pairs can be separated effectively. For the GO configuration with atomic Au dispersion, there are some states introduced in the band gap, which are predominantly composed of Au 6s states. Through the in-gap state, the photo-generated electron transfer from the valence band of clean GO to the conductive band more easily. In addition, the reduction of the gap in the system is also presented in the current work, which indicates that the single Au atom adsorption improves light absorption for the GO based photocatalyst. These theoretical results are valuable for the future applications of GO materials as photocatalyst for water splitting.

  11. Dynamic recovery and optical properties changes in He-implanted ZnO nanoparticles

    International Nuclear Information System (INIS)

    Lee, J.-K.; Harriman, T.A.; Lucca, D.A.; Jung, H.S.; Ryan, D.B.; Nastasi, M.

    2007-01-01

    A study of the effects of ion-implanted He + on the photoluminescence (PL) of ZnO nanoparticles is presented. This investigation is motivated by the need to further understand the effects of damage resulting from the implantation process on the luminescence response of the nanoparticles. ZnO nanoparticles were synthesized by reacting zinc acetate with lithium hydroxide. The nanoparticle suspension was then dip coated on SiO 2 substrates producing thin films of ZnO nanoparticles, which were then implanted with He + ions at either room temperature or 400 deg. C. Following implantation, the PL spectrum of the ZnO nanoparticles was investigated and compared to that obtained from He-implanted bulk ZnO. Change in the overall luminescence efficiency was found to depend on both the size of the nanoparticles and the implantation temperature, and is attributed to the dynamic recovery of collision cascades in the ZnO nanoparticles. In addition, a comparison of He + -implanted ZnO nanoparticles with He + -implanted ZnO single crystals indicates that the origin of the green luminescence occurring from the ZnO nanoparticles is near-surface complex defects

  12. Direct exchange between silicon nanocrystals and tunnel oxide traps under illumination on single electron photodetector

    Energy Technology Data Exchange (ETDEWEB)

    Chatbouri, S., E-mail: Samir.chatbouri@yahoo.com; Troudi, M.; Sghaier, N.; Kalboussi, A. [Avenue de I’environnement, Université de Monastir, Laboratoire de Micro électronique et Instrumentation (LR13ES12), Faculté des Sciences de Monastir (Tunisia); Aimez, V. [Université de Sherbrooke, Laboratoire Nanotechnologies et Nanosystémes (UMI-LN2 3463), Université de Sherbrooke—CNRS—INSA de Lyon-ECL-UJF-CPE Lyon, Institut Interdisciplinaire d’Innovation Technologique (Canada); Drouin, D. [Avenue de I’environnement, Université de Monastir, Laboratoire de Micro électronique et Instrumentation (LR13ES12), Faculté des Sciences de Monastir (Tunisia); Souifi, A. [Institut des Nanotechnologies de Lyon—site INSA de Lyon, UMR CNRS 5270 (France)

    2016-09-15

    In this paper we present the trapping of photogenerated charge carriers for 300 s resulted by their direct exchange under illumination between a few silicon nanocrystals (ncs-Si) embedded in an oxide tunnel layer (SiO{sub x} = 1.5) and the tunnel oxide traps levels for a single electron photodetector (photo-SET or nanopixel). At first place, the presence of a photocurrent limited in the inversion zone under illumination in the I–V curves confirms the creation of a pair electron/hole (e–h) at high energy. This photogenerated charge carriers can be trapped in the oxide. Using the capacitance-voltage under illumination (the photo-CV measurements) we show a hysteresis chargement limited in the inversion area, indicating that the photo-generated charge carriers are stored at traps levels at the interface and within ncs-Si. The direct exchange of the photogenerated charge carriers between the interface traps levels and the ncs-Si contributed on the photomemory effect for 300 s for our nanopixel at room temperature.

  13. Synthesis and characterization of single-crystalline zinc tin oxide nanowires

    Science.gov (United States)

    Shi, Jen-Bin; Wu, Po-Feng; Lin, Hsien-Sheng; Lin, Ya-Ting; Lee, Hsuan-Wei; Kao, Chia-Tze; Liao, Wei-Hsiang; Young, San-Lin

    2014-05-01

    Crystalline zinc tin oxide (ZTO; zinc oxide with heavy tin doping of 33 at.%) nanowires were first synthesized using the electrodeposition and heat treatment method based on an anodic aluminum oxide (AAO) membrane, which has an average diameter of about 60 nm. According to the field emission scanning electron microscopy (FE-SEM) results, the synthesized ZTO nanowires are highly ordered and have high wire packing densities. The length of ZTO nanowires is about 4 μm, and the aspect ratio is around 67. ZTO nanowires with a Zn/(Zn + Sn) atomic ratio of 0.67 (approximately 2/3) were observed from an energy dispersive spectrometer (EDS). X-ray diffraction (XRD) and corresponding selected area electron diffraction (SAED) patterns demonstrated that the ZTO nanowire is hexagonal single-crystalline. The study of ultraviolet/visible/near-infrared (UV/Vis/NIR) absorption showed that the ZTO nanowire is a wide-band semiconductor with a band gap energy of 3.7 eV.

  14. Synthesis and characterization of flowerlike ZnO nanostructures via an ethylenediamine-meditated solution route

    International Nuclear Information System (INIS)

    Gao Xiangdong; Li Xiaomin; Yu Weidong

    2005-01-01

    Flowerlike ZnO nanostructures were deposited on Si substrate by choosing hexamethylenetetramine as the nucleation control reagent and ethylenediamine as the chelating and capping reagent. Structural and optical measurements reveal that obtained ZnO exhibits well-defined flowerlike morphology, hexagonal wurtzite structure, uniform distribution on substrate, and strong photoluminescence in ultraviolet band. The well-arrayed pedals of each ZnO flower possess the typical tapering feature, and are built up by many well-aligned ZnO nanorods. Moreover, each single nanorod building up the pedal exhibits the single crystal nature and the growth direction along c-axis. Effects of the precursor composition on the morphology of ZnO were discussed

  15. The oxidative toxicity of Ag and ZnO nanoparticles towards the aquatic plant Spirodela punctuta and the role of testing media parameters: Conference paper

    CSIR Research Space (South Africa)

    Thwala, Melusi

    2013-08-01

    Full Text Available was observed for nZnO, only falling below analytical quantification at 0.1 mg/L and lower. The quantification of free radicals namely, reactive oxygen and nitrogen species (ROS/RNS) and hydrogen peroxide (H2O2), indicated the induction of oxidative stress...

  16. Growth of cadmium oxide whiskers on cadmium sulphide single crystals with copper as growth activator

    Energy Technology Data Exchange (ETDEWEB)

    Koparanova, N.; Simov, S. (Bylgarska Akademiya na Naukite, Sofia. Inst. po Fizika na Tvyrdoto Tyalo); Genchev, D. (Bylgarska Akademiya na Naukite, Sofia. Inst. za Yadrena Izsledvaniya i Yadrena Energetika); Metchenov, G. (Research Inst. of Criminalistics and Criminology, Sofia (Bulgaria))

    1985-02-01

    Some results on the growth and morphology of cadmium oxide whiskers, obtained on cadmium sulphide single crystals with copper as a growth activator, are presented in this work. Cadmium oxide whiskers have been obtained on brace 112-bar0 brace faces of cadmium sulphide plates with a copper layer deposited in advance. The whiskers grew during the annealing of the plates in a weak stream of technically pure argon at temperatures 670 to 730 deg C for 15 min to 3.5 h. Details about the procedure have been given elsewhere. The composition and morphology of the whiskers have been studied by an X-ray microanalyser JEOL 35 DDS and a scanning electron microscope JEOL, JSM 35. The optical microscopic observations have shown that after annealing, a gray-black granular layer is formed on the cadmium sulphide single crystals and this layer can easily be separated from the crystal substrate. Under the granular layer the crystal is heavily damaged. The whiskers grow on the granular layer and they are coloured yellow-brown or red-brown. The maximum whisker length attains several hundreds of micrometres and in some cases up to 1 mm or more.

  17. Growth of cadmium oxide whiskers on cadmium sulphide single crystals with copper as growth activator

    International Nuclear Information System (INIS)

    Koparanova, N.; Simov, S.

    1985-01-01

    Some results on the growth and morphology of cadmium oxide whiskers, obtained on cadmium sulphide single crystals with copper as a growth activator, are presented in this work. Cadmium oxide whiskers have been obtained on brace 112-bar0 brace faces of cadmium sulphide plates with a copper layer deposited in advance. The whiskers grew during the annealing of the plates in a weak stream of technically pure argon at temperatures 670 to 730 deg C for 15 min to 3.5 h. Details about the procedure have been given elsewhere. The composition and morphology of the whiskers have been studied by an X-ray microanalyser JEOL 35 DDS and a scanning electron microscope JEOL, JSM 35. The optical microscopic observations have shown that after annealing, a gray-black granular layer is formed on the cadmium sulphide single crystals and this layer can easily be separated from the crystal substrate. Under the granular layer the crystal is heavily damaged. The whiskers grow on the granular layer and they are coloured yellow-brown or red-brown. The maximum whisker length attains several hundreds of micrometres and in some cases up to 1 mm or more. (author)

  18. A comparison of buried oxide characteristics of single and multiple implant SIMOX and bond and etch back wafers

    International Nuclear Information System (INIS)

    Annamalai, N.K.; Bockman, J.F.; McGruer, N.E.; Chapski, J.

    1990-01-01

    The current through the buried oxides of single and multiple implant SIMOX and bond and etch back silicon-on-insulator (BESOI) wafers were measured as a function of radiation dose. From these measurements, conductivity and static capacitances were derived. High frequency capacitances were also measured. Leakage current through the buried oxide of multiple implant SIMOX is considerably less than that of single implant SIMOX (more than an order of magnitude). High frequency and static capacitances, as a function of total dose, were used to study the buried oxide---top silicon interface and the buried oxide---bottom silicon interface. Multiple implant had fewer interface traps than single implant at pre-rad and after irradiation

  19. Optical function of bionic nanostructure of ZnO

    Energy Technology Data Exchange (ETDEWEB)

    Xu, C X [Advanced Photonics Center, School of Electronic Science and Engineering, Southeast University, Nanjing 210096 (China); Zhu, G P [Advanced Photonics Center, School of Electronic Science and Engineering, Southeast University, Nanjing 210096 (China); Liu, Y J [School of Electrical and Electronic Engineering, Nanyang Technological University, Nanyang Avenue, 639798 (Singapore); Sun, X W [Advanced Photonics Center, School of Electronic Science and Engineering, Southeast University, Nanjing 210096 (China); Li, X [Advanced Photonics Center, School of Electronic Science and Engineering, Southeast University, Nanjing 210096 (China); Liu, J P [Advanced Photonics Center, School of Electronic Science and Engineering, Southeast University, Nanjing 210096 (China); Cui, Y P [Advanced Photonics Center, School of Electronic Science and Engineering, Southeast University, Nanjing 210096 (China)

    2007-10-15

    A novel bionic network nanostructure of zinc oxide (ZnO), which is similar to the microstructure of a butterfly wing, was first fabricated by a vapor-phase transport method using zinc powder as a source. These bionic nanostructures are composed of three ordered multi-aperture gratings. Similar to the optical effect of butterfly wings, the diffraction patterns of the bionic network of ZnO were observed. The mechanism of the optical function was discussed based on the physical model of multi-aperture diffraction.

  20. Optical function of bionic nanostructure of ZnO

    International Nuclear Information System (INIS)

    Xu, C X; Zhu, G P; Liu, Y J; Sun, X W; Li, X; Liu, J P; Cui, Y P

    2007-01-01

    A novel bionic network nanostructure of zinc oxide (ZnO), which is similar to the microstructure of a butterfly wing, was first fabricated by a vapor-phase transport method using zinc powder as a source. These bionic nanostructures are composed of three ordered multi-aperture gratings. Similar to the optical effect of butterfly wings, the diffraction patterns of the bionic network of ZnO were observed. The mechanism of the optical function was discussed based on the physical model of multi-aperture diffraction

  1. Heterojunction oxide thin-film transistors with unprecedented electron mobility grown from solution.

    Science.gov (United States)

    Faber, Hendrik; Das, Satyajit; Lin, Yen-Hung; Pliatsikas, Nikos; Zhao, Kui; Kehagias, Thomas; Dimitrakopulos, George; Amassian, Aram; Patsalas, Panos A; Anthopoulos, Thomas D

    2017-03-01

    Thin-film transistors made of solution-processed metal oxide semiconductors hold great promise for application in the emerging sector of large-area electronics. However, further advancement of the technology is hindered by limitations associated with the extrinsic electron transport properties of the often defect-prone oxides. We overcome this limitation by replacing the single-layer semiconductor channel with a low-dimensional, solution-grown In 2 O 3 /ZnO heterojunction. We find that In 2 O 3 /ZnO transistors exhibit band-like electron transport, with mobility values significantly higher than single-layer In 2 O 3 and ZnO devices by a factor of 2 to 100. This marked improvement is shown to originate from the presence of free electrons confined on the plane of the atomically sharp heterointerface induced by the large conduction band offset between In 2 O 3 and ZnO. Our finding underscores engineering of solution-grown metal oxide heterointerfaces as an alternative strategy to thin-film transistor development and has the potential for widespread technological applications.

  2. Heterojunction oxide thin-film transistors with unprecedented electron mobility grown from solution

    KAUST Repository

    Faber, Hendrik

    2017-04-28

    Thin-film transistors made of solution-processed metal oxide semiconductors hold great promise for application in the emerging sector of large-area electronics. However, further advancement of the technology is hindered by limitations associated with the extrinsic electron transport properties of the often defect-prone oxides. We overcome this limitation by replacing the single-layer semiconductor channel with a low-dimensional, solution-grown In2O3/ZnO heterojunction. We find that In2O3/ZnO transistors exhibit band-like electron transport, with mobility values significantly higher than single-layer In2O3 and ZnO devices by a factor of 2 to 100. This marked improvement is shown to originate from the presence of free electrons confined on the plane of the atomically sharp heterointerface induced by the large conduction band offset between In2O3 and ZnO. Our finding underscores engineering of solution-grown metal oxide heterointerfaces as an alternative strategy to thin-film transistor development and has the potential for widespread technological applications.

  3. Surfactant controlled low-temperature thermal decomposition route to zinc oxide nanorods from zinc(II) acetylacetonate monohydrate

    Energy Technology Data Exchange (ETDEWEB)

    Purkayastha, Debraj Dhar; Sarma, Bedabrat; Bhattacharjee, Chira R., E-mail: crbhattacharjee@rediffmail.com

    2014-10-15

    Zinc oxide (ZnO) nanorods were synthesized via a low-temperature thermal decomposition of zinc(II) acetylacetonate monohydrate, [Zn(C{sub 5}H{sub 7}O{sub 2}){sub 2}].H{sub 2}O. A relatively inexpensive surfactant, octadecylamine (C{sub 18}H{sub 37}NH{sub 2}) served both as a reaction solvent and a capping agent during the synthesis of ZnO nanorods. The synthesized nanorods were characterized by powder X-ray diffraction (XRD), transmission electron microscopy (TEM), FT-IR, UV–visible, and photoluminescence (PL) studies. The XRD spectrum furnished evidence for the hexagonal wurtzite structure of ZnO. TEM images revealed the material to be rod shaped having diameter 30 nm and length 200 nm. The HRTEM image showed that the lattice fringes between the two adjacent planes are 0.244 nm apart, which corresponds to the interplanar separation of the (1 0 1) plane of hexagonal ZnO. The electron diffraction (ED) pattern confirmed the single crystalline nature of the nanorods. The PL spectrum showed two UV emissions at 356 nm (∼3.48 eV) and 382 nm (∼3.25 eV). ZnO nanorods also showed very weak blue bands at 445, 453 and 470 nm. - Highlights: Low temperature thermal decomposition of zinc(II) acetylacetonate monohydrate gave zinc oxide nanorods. Powder XRD showed hexagonal wurtzite structure of ZnO having average diameter about 24 nm. TEM images revealed the material to be of rod shape having diameter 30 nm and length 200 nm. ZnO showed band gap luminescence at 356 nm, excitonic emission at 382 nm and defect related blue bands. The synthesis is simple and can act as a paradigm for obtaining various metal oxide nanomaterials.

  4. Tuning magnetism by biaxial strain in native ZnO.

    Science.gov (United States)

    Peng, Chengxiao; Wang, Yuanxu; Cheng, Zhenxiang; Zhang, Guangbiao; Wang, Chao; Yang, Gui

    2015-07-07

    Magnetic ZnO, one of the most important diluted magnetic semiconductors (DMS), has attracted great scientific interest because of its possible technological applications in optomagnetic devices. Magnetism in this material is usually delicately tuned by the doping level, dislocations, and local structures. The rational control of magnetism in ZnO is a highly attractive approach for practical applications. Here, the tuning effect of biaxial strain on the d(0) magnetism of native imperfect ZnO is demonstrated through first-principles calculations. Our calculation results show that strain conditions have little effect on the defect formation energy of Zn and O vacancies in ZnO, but they do affect the magnetism significantly. For a cation vacancy, increasing the compressive strain will obviously decrease its magnetic moment, while tensile strain cannot change the moment, which remains constant at 2 μB. For a singly charged anion vacancy, however, the dependence of the magnetic moment on strain is opposite to that of the Zn vacancy. Furthermore, the ferromagnetic state is always present, irrespective of the strain type, for ZnO with two zinc vacancies, 2VZns. A large tensile strain is favorable for improving the Curie temperature and realizing room temperature ferromagnetism for ZnO-based native semiconductors. For ZnO with two singly charged oxygen vacancies, 2Vs, no ferromagnetic ordering can be observed. Our work points the way to the rational design of materials beyond ZnO with novel non-intrinsic functionality by simply tuning the strain in a thin film form.

  5. Potato extract as reducing agent and stabiliser in a facile green one-step synthesis of ZnO nanoparticles

    DEFF Research Database (Denmark)

    Buazar, Foad; Bavi, M.; Kroushawi, Feisal

    2016-01-01

    A facile green recipe was developed to synthesise highly pure, safe and durable zinc oxide nanoparticles (ZnO Nps) using homemade starch-rich potato extract. The ZnO Nps were synthesised using zinc nitrate and potato extract, and the whole reaction is carried out for 30 min at 80 °C...

  6. Neutron scintillator using Ga-doped ZnO phosphor with high detection efficiency

    International Nuclear Information System (INIS)

    Koyama, Shin; Kinoshita, Atsushi; Fujiwara, Akihiko; Kobayashi, Haruki; Takei, Yoshinori; Nanto, Hidehito; Katagiri, Masaki

    2009-01-01

    Zinc Oxide (ZnO) family phosphors as phosphor for neutron detector have prepared using Spark Plasma Sintering (SPS) method. The optical properties of ZnO phosphor prepared are investigated. The following results were obtained. Two dominant photoluminescence (PL) emission peaks at 395 nm and 495 nm were observed. The lifetime of the PL emission peak at 395 nm (UV emission band) is about 20 ns, which is suitable for neutron detection. The Ga (30 mol%)-doped ZnO phosphor exhibited an intense UV emission band without the visible emission band. The Ga-doped ZnO phosphor can be prepared at the atmospheric pressure of about 8 Pa using SPS method. It was found that the PL intensity of UV emission band is increased with improving the crystallinity of the ZnO phosphor. (author)

  7. ZnO film for application in surface acoustic wave device

    International Nuclear Information System (INIS)

    Du, X Y; Fu, Y Q; Tan, S C; Luo, J K; Flewitt, A J; Maeng, S; Kim, S H; Choi, Y J; Lee, D S; Park, N M; Park, J; Milne, W I

    2007-01-01

    High quality, c-axis oriented zinc oxide (ZnO) thin films were grown on silicon substrate using RF magnetron sputtering. Surface acoustic wave (SAW) devices were fabricated with different thickness of ZnO ranging from 1.2 to 5.5 μmUm and the frequency responses were characterized using a network analyzer. Thick ZnO films produce the strongest transmission and reflection signals from the SAW devices. The SAW propagation velocity is also strongly dependent on ZnO film thickness. The performance of the ZnO SAW devices could be improved with addition of a SiO 2 layer, in name of reflection signal amplitude and phase velocity of Rayleigh wave

  8. Investigation of thin ZnO layers in view of laser desorption-ionization

    Energy Technology Data Exchange (ETDEWEB)

    Grechnikov, A A; Borodkov, A S [Vernadsky Institute of Geochemistry and Analytical Chemistry, Russian Academy of Sciences, 19 Kosygin Str., 119991 Moscow (Russian Federation); Georgieva, V B [Georgi Nadjakov Institute of Solid State Physics, Bulgarian Academy of Sciences, 72 Tzarigradsko Chaussee, 1784 Sofia (Bulgaria); Alimpiev, S S; Nikiforov, S M; Simanovsky, Ya O [General Physics Institute, Russian Academy of Sciences, 38 Vavilov Str., 119991 Moscow (Russian Federation); Dimova-Malinovska, D; Angelov, O I, E-mail: lazarova@issp.bas.b [Laboratory for Solar Energy and New Energy Sources, Bulgarian Academy of Sciences, 72 Tzarigradsko Chaussee, 1784 Sofia (Bulgaria)

    2010-04-01

    Thin zinc oxide films (ZnO) were developed as a matrix-free platform for surface assisted laser desorption-ionization (SALDI) time-of-flight mass spectrometry. The ZnO films were deposited by RF magnetron sputtering of ZnO ceramic targets in Ar atmospheres on monocrystalline silicon. The generation under UV (355 nm) laser irradiation of positive ions of atenolol, reserpine and gramicidin S from the ZnO layers deposited was studied. All analytes tested were detected as protonated molecules with no or very structure-specific fragmentation. The mass spectra obtained showed low levels of chemical background noise. All ZnO films studied exhibited high stability and good reproducibility. The detection limits for test analytes are in the 10 femtomol range.

  9. Direct current magnetron sputter-deposited ZnO thin films

    International Nuclear Information System (INIS)

    Hoon, Jian-Wei; Chan, Kah-Yoong; Krishnasamy, Jegenathan; Tou, Teck-Yong; Knipp, Dietmar

    2011-01-01

    Zinc oxide (ZnO) is a very promising electronic material for emerging transparent large-area electronic applications including thin-film sensors, transistors and solar cells. We fabricated ZnO thin films by employing direct current (DC) magnetron sputtering deposition technique. ZnO films with different thicknesses ranging from 150 nm to 750 nm were deposited on glass substrates. The deposition pressure and the substrate temperature were varied from 12 mTorr to 25 mTorr, and from room temperature to 450 deg. C, respectively. The influence of the film thickness, deposition pressure and the substrate temperature on structural and optical properties of the ZnO films was investigated using atomic force microscopy (AFM) and ultraviolet-visible (UV-Vis) spectrometer. The experimental results reveal that the film thickness, deposition pressure and the substrate temperature play significant role in the structural formation and the optical properties of the deposited ZnO thin films.

  10. The structural properties of flower-like ZnO nanostructures on porous silicon

    Science.gov (United States)

    Eswar, Kevin Alvin; Suhaimi, Mohd Husairi Fadzillah; Guliling, Muliyadi; Mohamad, Maryam; Khusaimi, Zuraida; Rusop, M.; Abdullah, Saifollah

    2018-05-01

    The flower-like zinc oxide (ZnO) were successfully synthesized on porous silicon (PSi) via hydrothermal method. The characteristic of ZnO nanostructures was investigated using field emission scanning microscopy (FESEM) and X-ray diffraction (X-Ray). The FESEM images show the flower-like ZnO nanostructures composed ZnO nanoparticles. The X-ray diffraction shows that strong intensity of (100), (002) and (101) peaks. The structural analysis revealed that the peaks angles were shifted due to the stress or imperfection of the crystalline of ZnO nanostructures. The crystalline sizes in range of 42.60 to 54.09 nm were produced.

  11. Powerful greenhouse gas nitrous oxide adsorption onto intrinsic and Pd doped Single walled carbon nanotube

    International Nuclear Information System (INIS)

    Yoosefian, Mehdi

    2017-01-01

    Highlights: • Investigation of the adsorption of Nitrous oxide on SWCNT and Pd/SWCNT. • Nitrous oxide adsorbed on Pd/SWCNT system demonstrates a strong adsorption. • The Pd/SWCNT is potential sensor for the Nitrous oxide gaseous molecule detection. - Abstract: Density functional studies on the adsorption behavior of nitrous oxide (N_2O) onto intrinsic carbon nanotube (CNT) and Pd-doped (5,5) single-walled carbon nanotube (Pd-CNT) have been reported. Introduction of Pd dopant facilitates in adsorption of N_2O on the otherwise inert nanotube as observed from the adsorption energies and global reactivity descriptor values. Among three adsorption features of N_2O onto CNT, the horizontal adsorption with E_a_d_s = −0.16 eV exhibits higher adsorption energy. On the other hand the Pd-CNT exhibit strong affinity toward gas molecule and would cause a huge increase in N_2O adsorption energies. Chemical and electronic properties of CNT and Pd-CNT in the absence and presence of N_2O were investigated. Adsorption of N_2O gas molecule would affect the electronic conductance of Pd-CNT that can serve as a signal of gas sensors and the increased energy gaps demonstrate the formation of more stable systems. The atoms in molecules (AIM) theory and the natural bond orbital (NBO) calculations were performed to get more details about the nature and charge transfers in intermolecular interactions within adsorption process. As a final point, the density of states (DOSs) calculations was achieved to confirm previous results. According to our results, intrinsic CNT cannot act as a suitable adsorbent while Pd-CNT can be introduced as novel detectable complex for designing high sensitive, fast response and high efficient carbon nanotube based gas sensor to detect N_2O gas as an air pollutant. Our results could provide helpful information for the design and fabrication of the N_2O sensors.

  12. ZnO Thin Film Electronics for More than Displays

    Science.gov (United States)

    Ramirez, Jose Israel

    Zinc oxide thin film transistors (TFTs) are investigated in this work for large-area electronic applications outside of display technology. A constant pressure, constant flow, showerhead, plasma-enhanced atomic layer deposition (PEALD) process has been developed to fabricate high mobility TFTs and circuits on rigid and flexible substrates at 200 °C. ZnO films and resulting devices prepared by PEALD and pulsed laser deposition (PLD) have been compared. Both PEALD and PLD ZnO films result in densely packed, polycrystalline ZnO thin films that were used to make high performance devices. PEALD ZnO TFTs deposited at 300 °C have a field-effect mobility of ˜ 40 cm2/V-s (and > 20 cm2/V-S deposited at 200 °C). PLD ZnO TFTs, annealed at 400 °C, have a field-effect mobility of > 60 cm2/V-s (and up to 100 cm2/V-s). Devices, prepared by either technique, show high gamma-ray radiation tolerance of up to 100 Mrad(SiO2) with only a small radiation-induced threshold voltage shift (VT ˜ -1.5 V). Electrical biasing during irradiation showed no enhanced radiation-induced effects. The study of the radiation effects as a function of material stack thicknesses revealed the majority of the radiation-induced charge collection happens at the semiconductor-passivation interface. A simple sheet-charge model at that interface can describe the radiation-induced charge in ZnO TFTs. By taking advantage of the substrate-agnostic process provided by PEALD, due to its low-temperature and excellent conformal coatings, ZnO electronics were monolithically integrated with thin-film complex oxides. Application-based examples where ZnO electronics provide added functionality to complex oxide-based devices are presented. In particular, the integration of arrayed lead zirconate titanate (Pb(Zr, Ti)O3 or PZT) thin films with ZnO electronics for microelectromechanical systems (MEMs) and deformable mirrors is demonstrated. ZnO switches can provide voltage to PZT capacitors with fast charging and slow

  13. Experimental and numerical optical characterization of plasmonic copper nanoparticles embedded in ZnO fabricated by ion implantation and annealing

    Energy Technology Data Exchange (ETDEWEB)

    Le, Khai Q. [Faculty of Science and Technology, Hoa Sen University, Ho Chi Minh City (Viet Nam); Department of Physics, Faculty of Science, Jazan University, P.O. Box 114, 45142 Jazan (Saudi Arabia); Nguyen, Hieu P.T. [Department of Electrical and Computer Engineering, New Jersey Institute of Technology, NJ 07102 (United States); Ngo, Quang Minh [Institute of Material Sciences, Vietnam Academy of Science and Technology, 18 Hoang Quoc Viet Road, Cau Giay, Hanoi (Viet Nam); Canimoglu, Adil [Nigde University, Faculty of Arts and Sciences, Physics Department, Nigde (Turkey); Can, Nurdogan, E-mail: cannurdogan@yahoo.com [Celal Bayar University, Faculty of Arts and Sciences, Department of Physics, Muradiye, Manisa (Turkey); Department of Physics, Faculty of Science, Jazan University, P.O. Box 114, 45142 Jazan (Saudi Arabia)

    2016-06-05

    Here we describe the successfully fabrication of metal nanoparticle crystals by implanting copper (Cu) ions into single zinc oxide (ZnO) crystals with ion energy of 400 keV at ion doses of 1 × 10{sup 16} to 1 × 10{sup 17} ions/cm{sup 2}. After implantation and post-annealing treatment, the Cu implanted ZnO produces a broad range of luminescence emissions, ranging from green to yellow. A green luminescence peak at 550 nm could be ascribed to the isolated Cu ions. The changes in luminescence emission bands between the initial implant and annealed suggest that the implants give rise to clustering Cu nanoparticles in the host matrix but that the annealing process dissociates these. Numerical modelling of the Cu nanoparticles was employed to simulate their optical properties including the extinction cross section, electron energy loss spectroscopy and cathodoluminescence. We demonstrate that the clustering of nanoparticles generates Fano resonances corresponding to the generation of multiple resonances, while the isolation of nanoparticles results in intensity amplification. - Highlights: • We present the fabrication of metal nanoparticle crystals by implanting Cu into ZnO. • The luminescence properties were studied at different annealing temperature. • Numerical modelling of the Cu nanoparticles was employed. • We demonstrate that the clustering of nanoparticles generates Fano resonances.

  14. Influence of the ZnO nanoarchitecture on the electrochemical performances of binder-free anodes for Li storage

    Energy Technology Data Exchange (ETDEWEB)

    Dall' Asta, V.; Tealdi, C.; Resmini, A.; Anselmi Tamburini, U.; Mustarelli, P., E-mail: piercarlo.mustarelli@unipv.it; Quartarone, E.

    2017-03-15

    Zinc oxide nanoarchitectures may be employed as binder-free, high specific capacity anodes for lithium batteries. By means of simple and low-impact wet chemistry approaches, we synthesized 1D (nanorods), 2D (single- and multi-layered nanosheets), and 3D (nanobrushes) ZnO arrays. These nanoarchitectures were compared as far as concerns their electrochemical properties and the structural modifications upon lithiation/delithiation. The best results were offered by 2D nanosheets, which showed reversible capacity of the order of 400 mAhg{sup −1} after 100 cycles at 1 Ag{sup −1}. This was due to: i) small nanoparticles, with average diameter of about 10 nm, which maximize the array specific surface area and favor the formation of the LiZn alloy; ii) the presence of a mesoporous texture, which allows larger space for accommodating the volume changes upon lithiation/delithiation. However, also these 2D structures showed large irreversible capacity losses. Our work highlights the need for more efficient buffering solutions in ZnO binder-free nanostructured anodes. - Graphical abstract: ZnO nanosheets as anode materials for lithium batteries.

  15. Enhanced photovoltaic performance of ZnO nanorod-based dye-sensitized solar cells by using Ga doped ZnO seed layer

    Energy Technology Data Exchange (ETDEWEB)

    Dou, Yuanyao [State Key Laboratory of Mechanical Transmission, Chongqing University, Chongqing 400044 (China); Department of Applied Physics, College of Physics, Chongqing University, Chongqing 401331 (China); Wu, Fang, E-mail: fang01234@163.com [State Key Laboratory of Mechanical Transmission, Chongqing University, Chongqing 400044 (China); Department of Applied Physics, College of Physics, Chongqing University, Chongqing 401331 (China); Mao, Caiying [Department of Applied Physics, College of Physics, Chongqing University, Chongqing 401331 (China); Fang, Liang, E-mail: lfang@cqu.edu.cn [State Key Laboratory of Mechanical Transmission, Chongqing University, Chongqing 400044 (China); Department of Applied Physics, College of Physics, Chongqing University, Chongqing 401331 (China); Guo, Shengchun [Department of Applied Physics, College of Physics, Chongqing University, Chongqing 401331 (China); Zhou, Miao [State Key Laboratory of Mechanical Transmission, Chongqing University, Chongqing 400044 (China)

    2015-06-05

    Highlights: • ZnO nanorods were grown on Ga-doped ZnO seed layers using hydrothermal method. • Using the ZnO nanorods as photoanodes for fabricated dye-sensitized solar cells. • The highest η of 1.23% can be achieved in a DSSC with 3 at.% Ga-doped in seeds. • The effects of ZnO seed layers on electron transport properties were investigated. • The enhancement performance of DSSCs contributed to higher dye loading and η{sub cc}. - Abstract: Zinc oxide (ZnO) nanorod arrays were grown on FTO substrates with a Ga-doped ZnO (GZO) seed layer by a hydrothermal method. GZO seed layers were obtained via sol–gel technology with Ga concentration in the range of 0–4 at.%. The dye sensitized solar cells (DSSCs) using ZnO nanorod arrays as the photoanode layers were prepared. The effect of Ga dopant concentrations in ZnO seed layer on the morphology features of ZnO nanorod arrays and the performance of DSSCs were systematically investigated. Results indicate that the average diameter and density of ZnO nanorod arrays decrease with increasing Ga concentration, but their length shows an opposite trend. The photocurrent density–voltage (J–V) characteristics reveal that the DSSCs with GZO seed layer exhibit significantly improved photovoltaic performance. In particular, the highest energy conversion efficiency (η) of 1.23% can be achieved in a DSSC with 3 at.% Ga doping, which is increased by 86.36% compared with that of the undoped DSSC. The external quantum efficiency (EQE) spectra and electrochemical impedance spectroscopy (EIS) were employed to explore the photon-to-electron conversion process in DSSCs. It is demonstrated that the performance enhancement of DSSCs based on GZO seed layer can be attributed to higher amount of dye loading, more efficient electron transportation and better electrons collection efficiency.

  16. Preparation of Tradescantia pallida-mediated zinc oxide ...

    African Journals Online (AJOL)

    (Commelinaceae) and determine their fluorescent and cytotoxic properties. Methods: ZnO ... Results: The agglomerated ZnO NPs were rod-shaped and had a mean particle size of 25 ± 2 nm. Further ... the leaf material was ground to a powder. Then, .... Figure 1: Zinc oxide nanoparticles (ZnO NPs) X-ray diffraction spectrum.

  17. Fabrication of Semiconductor ZnO Nanostructures for Versatile SERS Application

    Directory of Open Access Journals (Sweden)

    Lili Yang

    2017-11-01

    Full Text Available Since the initial discovery of surface-enhanced Raman scattering (SERS in the 1970s, it has exhibited a huge potential application in many fields due to its outstanding advantages. Since the ultra-sensitive noble metallic nanostructures have increasingly exposed themselves as having some problems during application, semiconductors have been gradually exploited as one of the critical SERS substrate materials due to their distinctive advantages when compared with noble metals. ZnO is one of the most representative metallic oxide semiconductors with an abundant reserve, various and cost-effective fabrication techniques, as well as special physical and chemical properties. Thanks to the varied morphologies, size-dependent exciton, good chemical stability, a tunable band gap, carrier concentration, and stoichiometry, ZnO nanostructures have the potential to be exploited as SERS substrates. Moreover, other distinctive properties possessed by ZnO such as biocompatibility, photocatcalysis and self-cleaning, and gas- and chemo-sensitivity can be synergistically integrated and exerted with SERS activity to realize the multifunctional potential of ZnO substrates. In this review, we discuss the inevitable development trend of exploiting the potential semiconductor ZnO as a SERS substrate. After clarifying the root cause of the great disparity between the enhancement factor (EF of noble metals and that of ZnO nanostructures, two specific methods are put forward to improve the SERS activity of ZnO, namely: elemental doping and combination of ZnO with noble metals. Then, we introduce a distinctive advantage of ZnO as SERS substrate and illustrate the necessity of reporting a meaningful average EF. We also summarize some fabrication methods for ZnO nanostructures with varied dimensions (0–3 dimensions. Finally, we present an overview of ZnO nanostructures for the versatile SERS application.

  18. Phytotoxic and genotoxic effects of ZnO nanoparticles on garlic (Allium sativum L.): a morphological study.

    Science.gov (United States)

    Shaymurat, Talgar; Gu, Jianxiu; Xu, Changshan; Yang, Zhikun; Zhao, Qing; Liu, Yuxue; Liu, Yichun

    2012-05-01

    The effects of zinc oxide nanoparticles (ZnO NPs) on the root growth, root apical meristem mitosis and mitotic aberrations of garlic (Allium sativum L.) were investigated. ZnO NPs caused a concentration-dependent inhibition of root length. When treated with 50 mg/L ZnO NPs for 24 h, the root growth of garlic was completely blocked. The 50% inhibitory concentration (IC(50)) was estimated to be 15 mg/L. The mitosis index was also decreased in a concentration- and time-dependent manner. ZnO NPs also induced several kinds of mitotic aberrations, mainly consisted of chromosome stickiness, bridges, breakages and laggings. The total percentage of abnormal cells increased with the increase of ZnO NPs concentration and the prolongation of treatment time. The investigation provided new information for the possible genotoxic effects of ZnO NPs on plants.

  19. Photoelectrochemical properties of hierarchical ZnO micro-nanostructure sensitized with Sb2S3 nanoparticles

    Directory of Open Access Journals (Sweden)

    Zhimin GUO

    2016-02-01

    Full Text Available By using electrochemical deposition method, and assisted with additions of PEG-400 and EDA, well-aligned ZnO nanorods and hierarchical ZnO micro-nanostructure are fabricated directly on indium doped tin oxide coated conducting glass (ITO substrate. The shell-core Sb2S3/ZnO nanorod structure and the shell-core hierarchical Sb2S3/ZnO micro-nanostructure are prepared by chemical bath deposition method. SEM, XRD, UV-Vis and photocurrent test are used to characterize the morphology, nanostructures and their photoelectrochemical properties. The studies show that the photocurrent on the array membranes with shell-core hierarchical Sb2S3/ZnO micro-nanostructure is apparently higher than that with shell-core Sb2S3/ZnO nanorods array.

  20. Improving the conductance of ZnO thin film doping with Ti by using a cathodic vacuum arc deposition process

    International Nuclear Information System (INIS)

    Wu, Chun-Sen; Lin, Bor-Tsuen; Jean, Ming-Der

    2011-01-01

    The Ti-doped ZnO films compared to un-doped ZnO films were deposited onto Corning XG glass substrates by using a cathodic vacuum arc deposition process in a mixture of oxygen and argon gases. The structural, electrical and optical properties of un-doped and Ti-doped ZnO films have been investigated. When the Ti target power is about 750 W, the incorporation of titanium atoms into zinc oxide films is obviously effective. Additionally, the resistivity of un-doped ZnO films is high and reduces to a value of 3.48 x 10 -3 Ω-cm when Ti is incorporated. The Ti doped in the ZnO films gave rise to the improvement of the conductivity of the films obviously. The Ti-doped ZnO films have > 85% transmittance in a range of 400-700 nm.

  1. Rapid synthesis of Co, Ni co-doped ZnO nanoparticles: Optical and electrochemical properties

    Energy Technology Data Exchange (ETDEWEB)

    Romeiro, Fernanda C.; Marinho, Juliane Z.; Lemos, Samantha C.S. [Instituto de Química, Universidade Federal de Uberlândia, 38400-902 Uberlândia, MG (Brazil); Moura, Ana P. de [LIEC, Instituto de Química, Universidade Estadual Paulista, 14800-900 Araraquara, SP (Brazil); Freire, Poliana G. [Instituto de Química, Universidade Federal de Uberlândia, 38400-902 Uberlândia, MG (Brazil); Silva, Luis F. da; Longo, Elson [LIEC, Instituto de Química, Universidade Estadual Paulista, 14800-900 Araraquara, SP (Brazil); Munoz, Rodrigo A.A. [Instituto de Química, Universidade Federal de Uberlândia, 38400-902 Uberlândia, MG (Brazil); Lima, Renata C., E-mail: rclima@iqufu.ufu.br [Instituto de Química, Universidade Federal de Uberlândia, 38400-902 Uberlândia, MG (Brazil)

    2015-10-15

    We report for the first time a rapid preparation of Zn{sub 1−2x}Co{sub x}Ni{sub x}O nanoparticles via a versatile and environmentally friendly route, microwave-assisted hydrothermal (MAH) method. The Co, Ni co-doped ZnO nanoparticles present an effect on photoluminescence and electrochemical properties, exhibiting excellent electrocatalytic performance compared to undoped ZnO sample. Photoluminescence spectroscopy measurements indicated the reduction of the green–orange–red visible emission region after adding Co and Ni ions, revealing the formation of alternative pathways for the generated recombination. The presence of these metallic ions into ZnO creates different defects, contributing to a local structural disorder, as revealed by Raman spectra. Electrochemical experiments revealed that the electrocatalytic oxidation of dopamine on ZnO attached to multi-walled carbon nanotubes improved significantly in the Co, Ni co-doped ZnO samples when compared to pure ZnO. - Graphical abstract: Rapid synthesis of Co, Ni co-doped ZnO nanoparticles: optical and electrochemical properties. Co, Ni co-doped ZnO hexagonal nanoparticles with optical and electrocatalytic properties were successfully prepared for the first time using a microwave hydrothermal method at mild conditions. - Highlights: • Co{sup 2+} and Ni{sup 2+} into ZnO lattice obtained a mild and environmentally friendly process. • The heating method strongly influences in the growth and shape of the particles. • Short-range defects generated by the ions insertion affects the photoluminescence. • Doped ZnO nanoparticles improve the electrocatalytic properties of pure oxide.

  2. Activities towards p-type doping of ZnO

    International Nuclear Information System (INIS)

    Brauer, G; Kuriplach, J; Ling, C C; Djurisic, A B

    2011-01-01

    Zinc oxide (ZnO) is an interesting and promising semiconductor material for many potential applications, e.g. in opto-electronics and for sensor devices. However, its p-type doping represents a challenging problem, and the physical reasons of its mostly n-type conductivity are not perfectly clear at present. Efforts to achieve p-type conductivity by ion implantation are reviewed, and ways to achieve p-type ZnO nanorods and thin films through various growth conditions are summarized. Then, issues associated with the preparation of Schottky contacts is discussed in some detail as this is a requirement of the device formation process. Finally, the possible incorporation of hydrogen and nitrogen into structural defects, which can act as trapping sites for positrons, is discussed in the context of experimental and theoretical positron results and the estimated H and N content in a variety of ZnO materials.

  3. Activities towards p-type doping of ZnO

    Energy Technology Data Exchange (ETDEWEB)

    Brauer, G [Institut fuer Ionenstrahlphysik und Materialforschung, Forschungszentrum Dresden-Rossendorf, Postfach 510119, D-01314 Dresden (Germany); Kuriplach, J [Department of Low Temperature Physics, Charles University, V Holetovickach 2, CZ-18000 Prague (Czech Republic); Ling, C C; Djurisic, A B, E-mail: g.brauer@fzd.de [Department of Physics, University of Hong Kong, Pokfulam Road (Hong Kong)

    2011-01-10

    Zinc oxide (ZnO) is an interesting and promising semiconductor material for many potential applications, e.g. in opto-electronics and for sensor devices. However, its p-type doping represents a challenging problem, and the physical reasons of its mostly n-type conductivity are not perfectly clear at present. Efforts to achieve p-type conductivity by ion implantation are reviewed, and ways to achieve p-type ZnO nanorods and thin films through various growth conditions are summarized. Then, issues associated with the preparation of Schottky contacts is discussed in some detail as this is a requirement of the device formation process. Finally, the possible incorporation of hydrogen and nitrogen into structural defects, which can act as trapping sites for positrons, is discussed in the context of experimental and theoretical positron results and the estimated H and N content in a variety of ZnO materials.

  4. Ultraviolet lasing behavior in ZnO optical microcavities

    Directory of Open Access Journals (Sweden)

    Hongxing Dong

    2017-12-01

    Full Text Available Zinc oxide (ZnO optical microcavity modulated UV lasers have been attracting a wide range of research interests. As one of the most important materials in developing high quality microcavity and efficient UV–visible optoelectronic devices due to its wide band gap (3.37 eV and large exciton binding energy (∼60 meV. In this review, we summarized the latest development of ZnO optical cavity based microlasers, mainly including Fabry-Perot mode lasers and whispering gallery mode lasers. The synthesis and optical studies of ZnO optical microcavities with different morphologies were discussed in detail. Finally, we also consider that the research focus in the near future would include new nanotechnology and physical effects, such as nano/micro fabrication, surface plasmon enhancement, and quantum dot coupling, which may result in new and interesting physical phenomena.

  5. Stability and band offsets between c-plane ZnO semiconductor and LaAlO3 gate dielectric

    Science.gov (United States)

    Wang, Jianli; Chen, Xinfeng; Wu, Shuyin; Tang, Gang; Zhang, Junting; Stampfl, C.

    2018-03-01

    Wurtzite-perovskite heterostructures composed of a high dielectric constant oxide and a wide bandgap semiconductor envision promising applications in field-effect transistors. In the present paper, the structural and electronic properties of LaAlO3/ZnO heterojunctions are investigated by first-principles calculations. We study the initial adsorption of La, Al, and oxygen atoms on ZnO (0001) and (000 1 ¯ ) surfaces and find that La atoms may occupy interstitial sites during the growth of stoichiometric ZnO (0001). The band gap of the stoichiometric ZnO (0001) surface is smaller than that of the stoichiometric ZnO (000 1 ¯ ) surface. The surface formation energy indicates that La or Al atoms may substitute Zn atoms at the nonstoichiometric ZnO (0001) surface. The atomic charges, electronic density of states, and band offsets are analyzed for the optimized LaAlO3/ZnO heterojunctions. There is a band gap for the LaAlO3/ZnO (000 1 ¯ ) heterostructures, and the largest variation in charge occurs at the surface or interface. Our results suggest that the Al-terminated LaAlO3/ZnO (000 1 ¯ ) interfaces are suitable for the design of metal oxide semiconductor devices because the valence and conduction band offsets are both larger than 1 eV and the interface does not produce any in-gap states.

  6. Preparation and oxidation resistance of single crystalline β-Zn{sub 4}Sb{sub 3}

    Energy Technology Data Exchange (ETDEWEB)

    Liu, Hong-xia; Deng, Shu-ping [Education Ministry Key Laboratory of Renewable Energy Advanced Materials and Manufacturing Technology, Yunnan Normal University, Kunming 650500 (China); Li, De-cong [Photoelectric Engineering College, Yunnan Open University, Kunming 650500 (China); Shen, Lan-xian; Cheng, Feng; Wang, Jin-song [Education Ministry Key Laboratory of Renewable Energy Advanced Materials and Manufacturing Technology, Yunnan Normal University, Kunming 650500 (China); Deng, Shu-kang, E-mail: skdeng@126.com [Education Ministry Key Laboratory of Renewable Energy Advanced Materials and Manufacturing Technology, Yunnan Normal University, Kunming 650500 (China)

    2016-11-01

    This study prepared a Zn-rich single crystal β-Zn{sub 4}Sb{sub 3} using a Sn flux method based on the stoichiometric ratios of Zn{sub 4.4}Sb{sub 3}Sn{sub 3}. The oxidation resistance of the sample was determined by exploring the effects of heat treatment in air on electrical transport properties and thermal stability, which is of practical importance in the application of the material at high temperatures. Results showed that the prepared sample possessed high electrical transport properties, with a high power factor of 1.67×10{sup −3} W m{sup −1} K{sup −2} at 563 K. The heat treatment in air weakened the electrical conductivity of the single crystalline β-Zn{sub 4}Sb{sub 3}, whereas the Seebeck coefficients were rarely independent of the annealing condition. Eventually, the power factor obtained after the first heating at 523 K for 4 h became comparable to that of the as-prepared sample, although it decreased after the second heating at 573 K for 5 h. Nevertheless, the single crystalline β-Zn{sub 4}Sb{sub 3} still possessed a good thermal stability after the heat treatment process.

  7. Single step synthesis, characterization and applications of curcumin functionalized iron oxide magnetic nanoparticles

    Energy Technology Data Exchange (ETDEWEB)

    Bhandari, Rohit; Gupta, Prachi; Dziubla, Thomas; Hilt, J. Zach, E-mail: zach.hilt@uky.edu

    2016-10-01

    Magnetic iron oxide nanoparticles have been well known for their applications in magnetic resonance imaging (MRI), hyperthermia, targeted drug delivery, etc. The surface modification of these magnetic nanoparticles has been explored extensively to achieve functionalized materials with potential application in biomedical, environmental and catalysis field. Herein, we report a novel and versatile single step methodology for developing curcumin functionalized magnetic Fe{sub 3}O{sub 4} nanoparticles without any additional linkers, using a simple coprecipitation technique. The magnetic nanoparticles (MNPs) were characterized using transmission electron microscopy, X-ray diffraction, fourier transform infrared spectroscopy and thermogravimetric analysis. The developed MNPs were employed in a cellular application for protection against an inflammatory agent, a polychlorinated biphenyl (PCB) molecule. - Graphical abstract: Novel single step curcumin coated magnetic Fe{sub 3}O{sub 4} nanoparticles without any additional linkers for medical, environmental, and other applications. Display Omitted - Highlights: • A novel and versatile single step methodology for developing curcumin functionalized magnetic Fe{sub 3}O{sub 4} nanoparticles is reported. • The magnetic nanoparticles (MNPs) were characterized using TEM, XRD, FTIR and TGA. • The developed MNPs were employed in a cellular application for protection against an inflammatory agent, a polychlorinated biphenyl (PCB).

  8. Nanofluid of zinc oxide nanoparticles in ionic liquid for single drop liquid microextraction of fungicides in environmental waters prior to high performance liquid chromatographic analysis.

    Science.gov (United States)

    Amde, Meseret; Tan, Zhi-Qiang; Liu, Rui; Liu, Jing-Fu

    2015-05-22

    Using a nanofluid obtained by dispersing ZnO nanoparticles (ZnO NPs) in 1-hexyl-3-methylimidazolium hexafluorophosphate, new single drop microextraction method was developed for simultaneous extraction of three fungicides (chlorothalonil, kresoxim-methyl and famoxadone) in water samples prior to their analysis by high performance liquid chromatography (HPLC-VWD). The parameters affecting the extraction efficiency such as amount of ZnO NPs in the nanofluid, solvent volume, extraction time, stirring rate, pH and ionic strength of the sample solution were optimized. Under the optimized conditions, the limits of detection were in the range of 0.13-0.19ng/mL, the precision of the method assessed with intra-day and inter-day relative standard deviations were water samples including lake water, river water, as well as effluent and influent of wastewater treatment plant, with recoveries in the range of 74.94-96.11% at 5ng/mL spiking level. Besides to being environmental friendly, the high enrichment factor and the data quality obtained with the proposed method demonstrated its potential for application in multi residue analysis of fungicides in actual water samples. Copyright © 2015 Elsevier B.V. All rights reserved.

  9. Chemical Sensing Applications of ZnO Nanomaterials

    Science.gov (United States)

    Chaudhary, Savita; Umar, Ahmad; Bhasin, K. K.

    2018-01-01

    Recent advancement in nanoscience and nanotechnology has witnessed numerous triumphs of zinc oxide (ZnO) nanomaterials due to their various exotic and multifunctional properties and wide applications. As a remarkable and functional material, ZnO has attracted extensive scientific and technological attention, as it combines different properties such as high specific surface area, biocompatibility, electrochemical activities, chemical and photochemical stability, high-electron communicating features, non-toxicity, ease of syntheses, and so on. Because of its various interesting properties, ZnO nanomaterials have been used for various applications ranging from electronics to optoelectronics, sensing to biomedical and environmental applications. Further, due to the high electrochemical activities and electron communication features, ZnO nanomaterials are considered as excellent candidates for electrochemical sensors. The present review meticulously introduces the current advancements of ZnO nanomaterial-based chemical sensors. Various operational factors such as the effect of size, morphologies, compositions and their respective working mechanisms along with the selectivity, sensitivity, detection limit, stability, etc., are discussed in this article. PMID:29439528

  10. The thermodynamic activity of ZnO in silicate melts

    Science.gov (United States)

    Reyes, R. A.; Gaskell, D. R.

    1983-12-01

    The activity of ZnO in ZnO-SiO2 and CaO-ZnO-SiO2 melts has been measured at 1560 °C using a transpiration technique with CO-CO2 mixtures as the carrier gas. The activities of ZnO in dilute solution in 42 wt pct SiO2-38 wt pct CaO-20 wt pct A12O3 in the range 1400° to 1550 °C and in 62 wt pct SiO2-23.3 wt pct CaO-14.7 wt pct A12O3 at 1550 °C have also been measured. The measured free energies of formation of ZnO-SiO2 melts are significantly more negative than published estimated values and this, together with the behavior observed in the system CaO-Al2O3-SiO2, indicate that ZnO is a relatively basic oxide. The results are discussed in terms of the polymerization model of binary silicate melts and ideal silicate mixing in ternary silicate melts. The behavior of ZnO in dilute solution in CaO-Al2O3-SiO2 melts is discussed in terms of the possibility of the fluxing of ZnO by iron blast furnace slags.

  11. Annealing effects of ZnO nanorods on dye-sensitized solar cell efficiency

    Energy Technology Data Exchange (ETDEWEB)

    Chung, Jooyoung; Lee, Juneyoung [Department of Chemical and Biomolecular Engineering, Yonsei University, 134 Shinchon-dong, Seodaemoon-gu, Seoul 120-749 (Korea, Republic of); Lim, Sangwoo, E-mail: swlim@yonsei.ac.k [Department of Chemical and Biomolecular Engineering, Yonsei University, 134 Shinchon-dong, Seodaemoon-gu, Seoul 120-749 (Korea, Republic of)

    2010-06-01

    Dye-sensitized solar cells (DSSCs) were fabricated using ZnO nanorod arrays vertically grown on fluorine-doped tin oxide (FTO) glass using a low-temperature hydrothermal method. When the ZnO seed layer was annealed, greater DSSC efficiency was obtained. This may be attributed to the improvement of adhesion between the FTO and the seed layer and the corresponding effective growth of the ZnO nanorods. The DSSCs fabricated using ZnO nanorods which underwent annealing were more efficient than those that did not undergo annealing. The ZnO nanorods which were annealed in N{sub 2}/H{sub 2} or O{sub 2} had increased dye loadings due to higher OH concentrations on the hydrophilic surface, which contributed to the improved DSSC efficiency. The fill factor increased after the annealing of the ZnO nanorods, potentially due to the improved crystallinity of the ZnO nanorods. In this study, annealing of both the seed layer and the ZnO nanorods resulted in the greatest DSSC efficiency.

  12. ZnO nanorods/polyaniline heterojunctions for low-power flexible light sensors

    Energy Technology Data Exchange (ETDEWEB)

    Talib, Rawnaq A.; Abdullah, M.J. [Nano-Optoelectronics Research and Technology (NOR) Laboratory, School of Physics, Universiti Sains Malaysia, 11800, Penang (Malaysia); Al-Salman, Husam S. [Department of Physics, College of Science, University of Basrah, Basrah (Iraq); Mohammad, Sabah M. [Nano-Optoelectronics Research and Technology (NOR) Laboratory, School of Physics, Universiti Sains Malaysia, 11800, Penang (Malaysia); Allam, Nageh K., E-mail: nageh.allam@aucegypt.edu [Energy Materials Laboratory (EML), School of Sciences and Engineering, The American University in Cairo, New Cairo, 11835 (Egypt)

    2016-09-15

    Zinc oxide nanorods (ZnO NRs) were directly grown on p-type polyaniline (PAni)/polyethylene terephthalate (PET) using chemical bath deposition method at low temperature. Field emission scanning electron microscopy and X-ray diffraction techniques were used to study the morphology and structure of the fabricated films. The resulted ZnO NRs are hexagonal and grew vertically on the PAni surface in the (002) direction along the c-axis. The compressive strain, Raman and photoluminescence measurements confirmed the high-quality crystal structure of the formed ZnO NRs with no damage of the PAni surface. The photodetector made using ZnO NRs/PAni junction showed a sensitivity of 85% and a quantum efficiency of 12.3% at 5 V. - Highlights: • ZnO NRs/polyaniline p-n junction photodetectors were fabricated on flexible substrates. • The fabricated ZnO NRs grew along the (002) direction. • The fabricated ZnO NRs have low compressive strain. • The ZnO NRs/PAni junction showed a high sensitivity of 85%. • The photodetectors showed quantum efficiency as high as 12%.

  13. Photoluminescence quenching and enhanced spin relaxation in Fe doped ZnO nanoparticles

    Energy Technology Data Exchange (ETDEWEB)

    Ovhal, Manoj M.; Santhosh Kumar, A. [Department of Materials Engineering, Defence Institute of Advanced Technology, Girinagar, Pune 411025 (India); Khullar, Prerna [School of Materials Science and Technology, Indian Institute of Technology (Banaras Hindu University), Varanasi 221005 (India); Kumar, Manjeet [Department of Materials Engineering, Defence Institute of Advanced Technology, Girinagar, Pune 411025 (India); Abhyankar, A.C., E-mail: ashutoshabhyankar@gmail.com [Department of Materials Engineering, Defence Institute of Advanced Technology, Girinagar, Pune 411025 (India)

    2017-07-01

    Cost-effective ultrasonically assisted precipitation method is utilized to synthesize Zinc oxide (ZnO) nanoparticles (NPs) at room temperature and the effect of Iron (Fe) doping on structural, optical and spin relaxation properties also presented. As-synthesized pure and Fe doped ZnO NPs possess a perfect hexagonal growth habit of wurtzite zinc oxide, along the (101) direction of preference. With Fe doping, ‘c/a’ ratio and compressive lattice strain in ZnO NPs are found to reduce and increase, respectively. Raman studies demonstrate that the E{sub 1} longitudinal optical (LO) vibrational mode is very weak in pure which remarkably enhanced with Fe doping into ZnO NPs. The direct band gap energy (E{sub g}) of the ZnO NPs has been increased from 3.02 eV to 3.11 eV with Fe doping. A slight red-shift observed with strong green emission band, in photoluminescence spectra, is strongly quenched in 6 wt.% Fe doped ZnO NPs. The field emission scanning electron microscopy (FESEM) and transmission electron microscopy (TEM) reveals spherical shape of ZnO NPs with 60–70 nm, which reduces substantially on Fe doping. The energy dispersive X-ray spectrum and elemental mapping confirms the homogeneous distribution of Fe in ZnO NPs. Moreover, the specific relaxation rate (R{sub 2sp} = 1/T{sub 2}) has been measured using Carr-Purcell-Meiboom-Gill (CPMG) method and found to be maximum in 6 wt.% Fe doped ZnO NPs. Further, the correlation of structural, optical and dynamic properties is proposed. - Highlights: • Pure ZnO and Fe doped ZnO NPs were successfully prepared by cost effective ultrasonically assisted precipitation method. • The optical band gap of ZnO has been enhanced form 3.02–3.11 eV with Fe doping. • PL quenching behaviour has been observed with Fe{sup 3+} ions substitution in ZnO lattice. • Specific relaxation rate (R{sub 2sp} = 1/T{sub 2}) has been varied with Fe doping and found to be maximum in 6 wt.% Fe doped ZnO NPs.

  14. Photoluminescence of Sequential Infiltration Synthesized ZnO nanostructures

    Science.gov (United States)

    Ocola, Leonidas; Gosztola, David; Yanguas-Gil, Angel; Connolly, Aine

    We have investigated a variation of atomic layer deposition (ALD), called sequential infiltration synthesis (SiS), as an alternate method to incorporate ZnO and other oxides inside polymethylmethacrylate (PMMA) and other polymers. Energy dispersive spectroscopy (EDS) results show that we synthesize ZnO up to 300 nm inside a PMMA film. Photoluminescence data on a PMMA film shows that we achieve a factor of 400X increase in photoluminescence (PL) intensity when comparing a blank Si sample and a 270 nm thick PMMA film, where both were treated with the same 12 alternating cycles of H2O and diethyl zinc (DEZ). PMMA is a well-known ebeam resist. We can expose and develop patterns useful for photonics or sensing applications first, and then convert them afterwards into a hybrid polymer-oxide material. We show that patterning does indeed affect the photoluminescence signature of native ZnO. We demonstrate we can track the growth of the ZnO inside the PMMA polymer using both photoluminescence and Raman spectroscopy and determine the point in the process where ZnO is first photoluminescent and also at which point ZnO first exhibits long range order in the polymer. This work was supported by the Department of Energy under Contract No. DE-AC02-06CH11357. Use of the Center for Nanoscale Materials was supported by the U. S. Department of Energy, Office of Basic Energy Sciences, under Contract No. DE-AC02-06CH11357.

  15. Coherent diffractive imaging of solid state reactions in zinc oxide crystals

    Science.gov (United States)

    Leake, Steven J.; Harder, Ross; Robinson, Ian K.

    2011-11-01

    We investigated the doping of zinc oxide (ZnO) microcrystals with iron and nickel via in situ coherent x-ray diffractive imaging (CXDI) in vacuum. Evaporated thin metal films were deposited onto the ZnO microcrystals. A single crystal was selected and tracked through annealing cycles. A solid state reaction was observed in both iron and nickel experiments using CXDI. A combination of the shrink wrap and guided hybrid-input-output phasing methods were applied to retrieve the electron density. The resolution was 33 nm (half order) determined via the phase retrieval transfer function. The resulting images are nevertheless sensitive to sub-angstrom displacements. The exterior of the microcrystal was found to degrade dramatically. The annealing of ZnO microcrystals coated with metal thin films proved an unsuitable doping method. In addition the observed defect structure of one crystal was attributed to the presence of an array of defects and was found to change upon annealing.

  16. Magnetic nanoparticles as a seed layer for growing ZnO nanowires for optical applications

    International Nuclear Information System (INIS)

    AlSalhi, M S; Atif, M; Ansari, Anees A; Khun, K; Ibupoto, Z H; Willander, M

    2013-01-01

    In the present work, cerium oxide CeO 2 nanoparticles were synthesised by sol-gel method and used for the growth of ZnO nanorods. The synthesised nanoparticles were studied by x-ray diffraction technique [XRD]. Furthermore, these nanoparticles were used as seed layer for the growth of ZnO nanorods by following the hydrothermal growth method. The structural study of ZnO nanorods was carried out by using field emission scanning electron microscopy [FESEM], and x-ray diffraction [XRD] techniques. This study demonstrated that the grown ZnO nanorods are well align, uniform, good in crystal quality and possess diameter of less than 200 nm. Energy dispersive x-rays [EDX] revealed that the ZnO nanorods are only composed of zinc, cerium as seed atom and oxygen atoms and no any other impurity in the grown nanorods. Moreover, photoluminescence [PL] approach was applied for the optical characterisation and it was observed that the near-band-edge emission [NBE] was same to that of zinc acetate seed layer, however the green emission and orange/red emission peaks were slightly raised due to possible higher level of defects in the cerium oxide seeded ZnO nanorods. This study provides an alternative approach for the synthesis of controlled ZnO nanorods using cerium oxide nanoparticles as seed nucleation layer which in reverse describe the application of these nanoparticles as well as due to controlled morphology of ZnO nanorods the performance of nanodevices based on ZnO can be increased using these particles as seed.

  17. The effect of binary oxide materials on a single droplet vapor explosion triggering

    International Nuclear Information System (INIS)

    Hansson, R.C.; Manickam, L.T.; Dinh, T.N.

    2011-01-01

    In order to explore the fundamental mechanism dictated by the material influence on triggering, fine fragmentation and subsequent vapor explosion energetics, a series of experiments using a mixture of eutectic and non-eutectic binary oxide were initiated. Dynamics of the hot liquid (WO 3 -CaO) droplet and the volatile liquid (water) were investigated in the MISTEE (Micro-Interactions in Steam Explosion Experiments) facility by performing well-controlled, externally triggered, single-droplet experiments, using a high-speed visualization system with synchronized digital cinematography and continuous X-ray radiography, called SHARP (Simultaneous High-speed Acquisition of X-ray Radiography and Photography). The acquired images followed by further analysis showed a milder interaction for the non-eutectic melt composition for the tests with low melt superheat, whether no evident differences between eutectic and non-eutectic melt compositions regarding bubble dynamics, energetics and melt preconditioning was perceived for the high melt superheat tests. (author)

  18. The adsorption of L-phenylalanine on oxidized single-walled carbon nanotubes.

    Science.gov (United States)

    Piao, Lingyu; Liu, Quanrun; Li, Yongdan; Wang, Chen

    2009-02-01

    A simple and green approach was proceeded to obtain a stable single-walled carbon nanotubes (SWNTs)/L-phenylalanine (Phe) solution. The oxidized SWNTs (OSWNT) were used in this work. The scanning electron microscopy (SEM), High-resolution transmission electron microscopy (HRTEM), Raman spectrometer, Fourier transform-infrared resonance (FT-IR), Ultraviolet-visible (UV-vis) spectroscopy, Thermogravimetric analysis (TGA) and High performance liquid chromatography (HPLC) were joined together to investigate the interaction between OSWNT and Phe. The OSWNT became soluble in the water and formed a stable solution since the Phe was adsorbed. The absorbed amount of Phe on the OSWNT is around 33 wt%. Adsorption of the Phe was mainly carried out on the OSWNT with smaller diameters. The Phe molecules were absorbed on the OSWNT by conjunct interaction of the pi-pi stacking, hydrogen bond and part of covalent bond.

  19. Preparation of thin hexagonal highly-ordered anodic aluminum oxide (AAO) template onto silicon substrate and growth ZnO nanorod arrays by electrodeposition

    Science.gov (United States)

    Chahrour, Khaled M.; Ahmed, Naser M.; Hashim, M. R.; Elfadill, Nezar G.; Qaeed, M. A.; Bououdina, M.

    2014-12-01

    In this study, anodic aluminum oxide (AAO) templates of Aluminum thin films onto Ti-coated silicon substrates were prepared for growth of nanostructure materials. Hexagonally highly ordered thin AAO templates were fabricated under controllable conditions by using a two-step anodization. The obtained thin AAO templates were approximately 70 nm in pore diameter and 250 nm in length with 110 nm interpore distances within an area of 3 cm2. The difference between first and second anodization was investigated in details by in situ monitoring of current-time curve. A bottom barrier layer of the AAO templates was removed during dropping the voltage in the last period of the anodization process followed by a wet etching using phosphoric acid (5 wt%) for several minutes at ambient temperature. As an application, Zn nanorod arrays embedded in anodic alumina (AAO) template were fabricated by electrodeposition. Oxygen was used to oxidize the electrodeposited Zn nanorods in the AAO template at 700 °C. The morphology, structure and photoluminescence properties of ZnO/AAO assembly were analyzed using Field-emission scanning electron microscope (FESEM), Energy dispersive X-ray spectroscopy (EDX), Atomic force microscope (AFM), X-ray diffraction (XRD) and photoluminescence (PL).

  20. Effects of annealing atmosphere on ZnO{sup -} ions-implanted silica glass: synthesis of Zn and ZnO nanoparticles

    Energy Technology Data Exchange (ETDEWEB)

    Kuiri, P K [Department of Physics, Achhruram Memorial College, P.O. Jhalda, Purulia 723202 (India); Mahapatra, D P, E-mail: kuiripk@gmail.co [Institute of Physics, Sachivalaya Marg, Bhubaneswar 751005 (India)

    2010-10-06

    The effects of annealing atmosphere (argon or oxygen) on Zn nanoparticles (NPs), embedded in silica glass, synthesized by implanting 50 keV ZnO{sup -} ions to a fluence of 7 x 10{sup 16} cm{sup -2} have been studied. Optical absorption (OA) measurements carried out on the as-implanted samples have been found to result in a surface plasmon resonance (SPR) band centred at {approx}255 nm due to the presence of Zn NPs in the silica glass. An increase in SPR peak intensity with a corresponding reduction of its full width at half maximum have been seen in the OA spectrum taken from the as-implanted sample following annealing in Ar ambient at 700 {sup 0}C for 2 h, indicating a growth in the size of Zn NPs. However, annealing the as-implanted sample in O{sub 2} gas at 700 {sup 0}C for 2 h has been found to result in a steep absorption edge at {approx}364 nm in the OA spectrum which indicates the formation of ZnO NPs. These ZnO NPs show quantum confinement effects due to their small sizes. No observable photoluminescence (PL) emission has been seen from Zn NPs, whereas an excitonic band at {approx}368 nm and three deep-level PL emission bands at {approx}453 nm, {approx}521 nm and {approx}650 nm, respectively, have been seen from ZnO NPs. It was argued that the deep-level PLs were due to the singly ionized oxygen vacancies located at ZnO NPs' surfaces. These observations suggest that ZnO NPs were formed due to oxidation of Zn NPs via interaction with the indiffusing O{sub 2} molecules during annealing in O{sub 2} ambient, but not with the interaction of the implanted oxygen in silica glass.

  1. A Facile Route to Metal Oxides/Single-Walled Carbon Nanotube Macrofilm Nanocomposites for Energy Storage

    Science.gov (United States)

    Cao, Zeyuan; Wei, Bingqing

    2015-05-01

    Nanocomposites consisting of transition-metal oxides and carbon nanomaterials with a desired size and structure are highly demanded for high performance energy storage devices. Here, a facile two-step and cost-efficient approach relying on directly thermal treatment of chemical-vapor-deposition products is developed as a general synthetic method to prepare a family of metal oxides (MxOy (M=Fe, Co, Ni))/single-walled carbon nanotube (SWNT) macrofilm nanocomposites. The MxOy nanoparticles obtained are of 3-17 nm in diameter and homogeneously anchor on the free-standing SWNT macrofilms. NiO/SWNT also exhibits a high specific capacitance of 400 F g-1 and fast charge-transfer Faradaic redox reactions to achieve asymmetric supercapacitors with a high power and energy density. All MxOy/SWNT nanocomposites could deliver a high capacity beyond 1000 mAh g-1 and show excellent cycling stability for lithium-ion batteries. The impressive results demonstrate the promise for energy storage devices and the general approach may pave the way to synthesize other functional nanocomposites.

  2. A Facile Route to Metal Oxides/Single-Walled Carbon Nanotube Macrofilm Nanocomposites for Energy Storage

    Directory of Open Access Journals (Sweden)

    Zeyuan eCao

    2015-05-01

    Full Text Available Nanocomposites consisting of transition-metal oxides and carbon nanomaterials with a desired size and structure are highly demanded for high performance energy storage devices. Here, a facile two-step and cost-efficient approach relying on directly thermal treatment of chemical-vapor-deposition products is developed as a general synthetic method to prepare a family of metal oxides (MxOy (M=Fe, Co, Ni/single-walled carbon nanotube (SWNT macrofilm nanocomposites. The MxOy nanoparticles obtained are of 3-17 nm in diameter and homogeneously anchor on the free-standing SWNT macrofilms. NiO/SWNT also exhibits a high specific capacitance of 400 F g-1 and fast charge-transfer Faradaic redox reactions to achieve asymmetric supercapacitors with a high power and energy density. All MxOy/SWNT nanocomposites could deliver a high capacity beyond 1000 mAh g-1 and show excellent cycling stability for lithium-ion batteries. The impressive results demonstrate the promise for energy storage devices and the general approach may pave the way to synthesize other functional nanocomposites.

  3. Single-layered graphene oxide nanosheet/polyaniline hybrids fabricated through direct molecular exfoliation.

    Science.gov (United States)

    Chen, Guan-Liang; Shau, Shi-Min; Juang, Tzong-Yuan; Lee, Rong-Ho; Chen, Chih-Ping; Suen, Shing-Yi; Jeng, Ru-Jong

    2011-12-06

    In this study, we used direct molecular exfoliation for the rapid, facile, large-scale fabrication of single-layered graphene oxide nanosheets (GOSs). Using macromolecular polyaniline (PANI) as a layered space enlarger, we readily and rapidly synthesized individual GOSs at room temperature through the in situ polymerization of aniline on the 2D GOS platform. The chemically modified GOS platelets formed unique 2D-layered GOS/PANI hybrids, with the PANI nanorods embedded between the GO interlayers and extended over the GO surface. X-ray diffraction revealed that intergallery expansion occurred in the GO basal spacing after the PANI nanorods had anchored and grown onto the surface of the GO layer. Transparent folding GOSs were, therefore, observed in transmission electron microscopy images. GOS/PANI nanohybrids possessing high conductivities and large work functions have the potential for application as electrode materials in optoelectronic devices. Our dispersion/exfoliation methodology is a facile means of preparing individual GOS platelets with high throughput, potentially expanding the applicability of nanographene oxide materials. © 2011 American Chemical Society

  4. Single Pd Atoms on θ-Al2O3 (010) Surface do not Catalyze NO Oxidation.

    Science.gov (United States)

    Narula, Chaitanya K; Allard, Lawrence F; Moses-DeBusk, Melanie; Stocks, G Malcom; Wu, Zili

    2017-04-03

    New convenient wet-chemistry synthetic routes have made it possible to explore catalytic activities of a variety of single supported atoms, however, the single supported atoms on inert substrates (e.g. alumina) are limited to adatoms and cations of Pt, Pd, and Ru. Previously, we have found that single supported Pt atoms are remarkable NO oxidation catalysts. In contrast, we report that Pd single atoms are completely inactive for NO oxidation. The diffuse reflectance infra-red spectroscopy (DRIFTS) results show the absence of nitrate formation on catalyst. To explain these results, we explored modified Langmuir-Hinshelwood type pathways that have been proposed for oxidation reactions on single supported atom. In the first pathway, we find that there is energy barrier for the release of NO 2 which prevent NO oxidation. In the second pathway, our results show that there is no driving force for the formation of O=N-O-O intermediate or nitrate on single supported Pd atoms. The decomposition of nitrate, if formed, is an endothermic event.

  5. ZnO nanostructure fabrication in different solvents transforms physio-chemical, biological and photodegradable properties

    Energy Technology Data Exchange (ETDEWEB)

    Ali, Attarad; Ambreen, Sidra; Javed, Rabia; Tabassum, Saira [Department of Biotechnology, Quaid-i-Azam University, Islamabad 45320 (Pakistan); Ul Haq, Ihsan [Department of Pharmacy, Quaid-i-Azam University, Islamabad 45320 (Pakistan); Zia, Muhammad, E-mail: ziachaudhary@gmail.com [Department of Biotechnology, Quaid-i-Azam University, Islamabad 45320 (Pakistan)

    2017-05-01

    Zinc oxide (ZnO) nanostructures are synthesized in various organic solvents (acetone, chloroform, ethyl acetate, ethanol and methanol) and water via coprecipitation process using zinc acetate as precursor. The resultant ZnO nanoparticles, nano rods and nano sheets are characterized by UV–vis spectrophotometric analysis, scanning electron microscopy (SEM), X-ray diffraction (XRD), Fourier transmission infrared spectroscopy (FTIR), and energy dispersive X-ray spectroscopy (EDX). The variable size and geometry of nanoparticles depend upon medium used for synthesis. The synthesized ZnO nanostructures exhibit minor to moderate antioxidative (DPPH based free radical scavenging activity, total antioxidative potential and total reducing power) response. Mild to moderate antibacterial and antifungal activities, excellent antileishmanial potential (IC50 up to 3.76), and good cytotoxic perspective (LD50 up to 49.4) is also observed by the synthesized ZnO NPs. The nanoparticles also exhibit moderate α-amylase inhibition response. Furthermore the nanostructures are evaluated for methylene blue photodegradation response within 60 min time period. It is found that organic solvent alters shape, size and other physio-chemical properties of ZnO that ultimately modulate the biological, chemical, and environmental properties. - Highlights: • Zinc oxide nanoparticles are fabricated in different solvents using co-precipitation method • SEM, XRD and FTIR analysis confirms variation in physical and chemical characteristics of synthesized ZnO NPs • The synthesized ZnO demonstrates variation in biological, phytochemical and photodegradable properties.

  6. ZnO nanostructure fabrication in different solvents transforms physio-chemical, biological and photodegradable properties

    International Nuclear Information System (INIS)

    Ali, Attarad; Ambreen, Sidra; Javed, Rabia; Tabassum, Saira; Ul Haq, Ihsan; Zia, Muhammad

    2017-01-01

    Zinc oxide (ZnO) nanostructures are synthesized in various organic solvents (acetone, chloroform, ethyl acetate, ethanol and methanol) and water via coprecipitation process using zinc acetate as precursor. The resultant ZnO nanoparticles, nano rods and nano sheets are characterized by UV–vis spectrophotometric analysis, scanning electron microscopy (SEM), X-ray diffraction (XRD), Fourier transmission infrared spectroscopy (FTIR), and energy dispersive X-ray spectroscopy (EDX). The variable size and geometry of nanoparticles depend upon medium used for synthesis. The synthesized ZnO nanostructures exhibit minor to moderate antioxidative (DPPH based free radical scavenging activity, total antioxidative potential and total reducing power) response. Mild to moderate antibacterial and antifungal activities, excellent antileishmanial potential (IC50 up to 3.76), and good cytotoxic perspective (LD50 up to 49.4) is also observed by the synthesized ZnO NPs. The nanoparticles also exhibit moderate α-amylase inhibition response. Furthermore the nanostructures are evaluated for methylene blue photodegradation response within 60 min time period. It is found that organic solvent alters shape, size and other physio-chemical properties of ZnO that ultimately modulate the biological, chemical, and environmental properties. - Highlights: • Zinc oxide nanoparticles are fabricated in different solvents using co-precipitation method • SEM, XRD and FTIR analysis confirms variation in physical and chemical characteristics of synthesized ZnO NPs • The synthesized ZnO demonstrates variation in biological, phytochemical and photodegradable properties.

  7. Inhibition of growth of S. epidermidis by hydrothermally synthesized ZnO nanoplates

    Science.gov (United States)

    Abinaya, C.; Mayandi, J.; Osborne, J.; Frost, M.; Ekstrum, C.; Pearce, J. M.

    2017-07-01

    The antibacterial effect of zinc oxide (ZnO#1) as prepared and annealed (ZnO#2) at 400 °C, Cu doped ZnO (CuZnO), and Ag doped ZnO (AgZnO) nanoplates on Staphylococcus epidermidis was investigated for the inhibition and inactivation of cell growth. The results shows that pure ZnO and doped ZnO samples exhibited antibacterial activity against Staphylococcus epidermidis (S. epidermidis) as compared to tryptic soy broth (TSB). Also it is observed that S.