Tunable, flexible antireflection layer of ZnO nanowires embedded in PDMS.

Science.gov (United States)

Kim, Min Kyu; Yi, Dong Kee; Paik, Ungyu

2010-05-18

In this article, we report the fabrication of ordered hybrid structures composed of ZnO nanowires and a polymeric matrix with a polymer precursor infiltrating the nanowire arrays. The antireflective properties of the resulting ZnO nanowire-embedded polydimethylsiloxane composite (ZPC) were investigated at various ZnO nanowire lengths and ZPC bending angles. Interestingly, we found that whereas the antireflective properties showed a strong dependence on the length of the embedded ZnO nanowires in PDMS, the bending of ZPC has little effect on the antireflective properties.

Enhancement of exciton radiative recombination for In-doped ZnO nanowires with aluminum cylindrical micropillars

Energy Technology Data Exchange (ETDEWEB)

Wang, Jen-Cheng; Liang, Yu-Ting; Cheng, Fang-Ching; Fang, Chia-Hui; Chen, Hung-Ing; Tsai, Chung-Yuan [Graduate Institute of Electro-Optical Engineering and Department of Electronic Engineering, Chang Gung University, 259 Wen-Hwa 1st Road, Kwei-Shan, Tao-Yuan 333, Taiwan, ROC (China); Jiang, Joe-Air [Department of Bio-Industrial Mechatronics Engineering, National Taiwan University, Taipei 106, Taiwan, ROC (China); Nee, Tzer-En, E-mail: neete@mail.cgu.edu.tw [Graduate Institute of Electro-Optical Engineering and Department of Electronic Engineering, Chang Gung University, 259 Wen-Hwa 1st Road, Kwei-Shan, Tao-Yuan 333, Taiwan, ROC (China)

2013-04-15

Zinc oxide (ZnO) has attracted intensive research effort in recent years, due to its unique properties and versatile applications. Recent work on the conservation of surface plasmon (SP) and light through period metal arrays has elucidated the propagation of SP resonance behavior. In this paper, we discuss the enhancement of exciton radiative recombination of the ZnO nanowires with Al cylindrical micropillars. Optical characterization of exciton interacted with SP resonance for indium-doped ZnO nanowires with Al cylindrical micropillars has been also investigated. From photoluminescence spectra of In-doped ZnO nanowires, it is found that the In-doped ZnO nanowires have a blue emission at 425 nm, which resulted from the ZnO band-to-band transition. Prior to the arrays of samples were annealed, a broad green emission centered at 500 nm was observed, which is attributed to ZnO native point defects. The relatively strong green band emission results from the radiative recombination that arises from the ionized oxygen vacancy and surface-defect related luminescence. Compare the In-doped ZnO on Si substrate, the enhancement of PL intensity for In-doped ZnO with deposited Al pattern film can be attributed to strong interaction with SP resonance and exciton over a broad temperature range. These experimental results indicate that Al cylindrical micropillars can significantly enhance carrier confinement and increase the quantum efficiency of In-doped ZnO/Al heterostructures due to the interaction of SP resonance between the In-doped ZnO nanowires and Al cylindrical micropillar structures, the surface-defect related luminescence, and the auxiliary test structures with variable micropillar parameters. -- Highlights: ► We examine the exciton radiative recombination of the ZnO nanowires. ► Al cylindrical micropillars affect the carrier recombination of ZnO/Al structures. ► The interaction of SP resonance between In-doped ZnO nanowire and Al pattern film. ► The carrier

Electrochemical synthesis and characterization of hierarchically branched ZnO nanostructures on ensembles of gold nanowires

International Nuclear Information System (INIS)

Ongaro, Michael; Gambirasi, Arianna; Favaro, Monica; Ugo, Paolo

2012-01-01

Highlights: ► ZnO branched nanofibres for photoelectrochemical applications. ► Branched nanostructures are obtained by electrochemical deposition of ZnO on gold template nanowires. ► Branched nanowires crystallographic phase determined by electron back scatter diffraction. ► Branched structures display improved performances for the photoelectrochemical oxidation of water. - Abstract: This study presents an electrosynthetic methodology to obtain hierarchically structured ZnO electrodes with improved surface area, by exploiting gold nanowires ensembles (3D-NEEs) as the growing substrate. By this way, semiconductor electrodes organized in the shape of fir-like branches are obtained. Branched nanofibres are characterized by electron microscopy and electron backscatter diffraction (EBSD), the latter technique allowing the determination of the crystalline habit of individual nanostructures. The hierarchical branched nanowires show enhanced performances with respect to water photooxidation in comparison with already known nanostructured materials such as 1D-ZnO nanowires.

Title: Using Alignment and 2D Network Simulations to Study Charge Transport Through Doped ZnO Nanowire Thin Film Electrodes

KAUST Repository

Phadke, Sujay

2011-09-30

Factors affecting charge transport through ZnO nanowire mat films were studied by aligning ZnO nanowires on substrates and coupling experimental measurements with 2D nanowire network simulations. Gallium doped ZnO nanowires were aligned on thermally oxidized silicon wafer by shearing a nanowire dispersion in ethanol. Sheet resistances of nanowire thin films that had current flowing parallel to nanowire alignment direction were compared to thin films that had current flowing perpendicular to nanowire alignment direction. Perpendicular devices showed ∼5 fold greater sheet resistance than parallel devices supporting the hypothesis that aligning nanowires would increase conductivity of ZnO nanowire electrodes. 2-D nanowire network simulations of thin films showed that the device sheet resistance was dominated by inter-wire contact resistance. For a given resistivity of ZnO nanowires, the thin film electrodes would have the lowest possible sheet resistance if the inter-wire contact resistance was one order of magnitude lower than the single nanowire resistance. Simulations suggest that the conductivity of such thin film devices could be further enhanced by using longer nanowires. Solution processed Gallium doped ZnO nanowires are aligned on substrates using an innovative shear coating technique. Nanowire alignment has shown improvement in ZnO nanowire transparent electrode conductivity. 2D network simulations in conjunction with electrical measurements have revealed different regimes of operation of nanowire thin films and provided a guideline for improving electrical performance of nanowire electrodes. Copyright © 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Electrical properties of fluorine-doped ZnO nanowires formed by biased plasma treatment

Science.gov (United States)

Wang, Ying; Chen, Yicong; Song, Xiaomeng; Zhang, Zhipeng; She, Juncong; Deng, Shaozhi; Xu, Ningsheng; Chen, Jun

2018-05-01

Doping is an effective method for tuning electrical properties of zinc oxide nanowires, which are used in nanoelectronic devices. Here, ZnO nanowires were prepared by a thermal oxidation method. Fluorine doping was achieved by a biased plasma treatment, with bias voltages of 100, 200, and 300 V. Transmission electron microscopy indicated that the nanowires treated at bias voltages of 100 and 200 V featured low crystallinity. When the bias voltage was 300 V, the nanowires showed single crystalline structures. Photoluminescence measurements revealed that concentrations of oxygen and surface defects decreased at high bias voltage. X-ray photoelectron spectroscopy suggested that the F content increased as the bias voltage was increased. The conductivity of the as-grown nanowires was less than 103 S/m; the conductivity of the treated nanowires ranged from 1 × 104-5 × 104, 1 × 104-1 × 105, and 1 × 103-2 × 104 S/m for bias voltage treatments at 100, 200, and 300 V, respectively. The conductivity improvements of nanowires formed at bias voltages of 100 and 200 V, were attributed to F-doping, defects and surface states. The conductivity of nanowires treated at 300 V was attributed to the presence of F ions. Thus, we provide a method of improving electrical properties of ZnO nanowires without altering their crystal structure.

Growth of high-aspect ratio horizontally-aligned ZnO nanowire arrays.

Science.gov (United States)

Soman, Pranav; Darnell, Max; Feldman, Marc D; Chen, Shaochen

2011-08-01

A method of fabricating horizontally-aligned zinc-oxide (ZnO) nanowire (NW) arrays with full control over the width and length is demonstrated. SEM images reveal the hexagonal structure typical of zinc oxide NWs. Arrays of high-aspect ratio horizontal ZnO NWs are fabricated by making use of the lateral overgrowth from dot patterns created by electron beam lithography (EBL). An array of patterned wires are lifted off and transferred to a flexible PDMS substrate with possible applications in several key nanotechnology areas.

Rapid Hydrothermal Synthesis of Zinc Oxide Nanowires by Annealing Methods on Seed Layers

Directory of Open Access Journals (Sweden)

Jang Bo Shim

2011-01-01

Full Text Available Well-aligned zinc oxide (ZnO nanowire arrays were successfully synthesized on a glass substrate using the rapid microwave heating process. The ZnO seed layers were produced by spinning the precursor solutions onto the substrate. Among coatings, the ZnO seed layers were annealed at 100°C for 5 minutes to ensure particle adhesion to the glass surface in air, nitrogen, and vacuum atmospheres. The annealing treatment of the ZnO seed layer was most important for achieving the high quality of ZnO nanowire arrays as ZnO seed nanoparticles of larger than 30 nm in diameter evolve into ZnO nanowire arrays. Transmission electron microscopy analysis revealed a single-crystalline lattice of the ZnO nanowires. Because of their low power (140 W, low operating temperatures (90°C, easy fabrication (variable microwave sintering system, and low cost (90% cost reduction compared with gas condensation methods, high quality ZnO nanowires created with the rapid microwave heating process show great promise for use in flexible solar cells and flexible display devices.

UV irradiation assisted growth of ZnO nanowires on optical fiber surface

Energy Technology Data Exchange (ETDEWEB)

Gong, Bo; Shi, Tielin; Liao, Guanglan; Li, Xiaoping; Huang, Jie; Zhou, Temgyuan; Tang, Zirong, E-mail: zirong@mail.hust.edu.cn

2017-06-01

Highlights: • A new fabrication process combined a hydrothermal process with UV irradiation from optical fiber is developed. • The growth of ZnO nanowires is efficient in the utilization of UV light. • A novel hybrid structure which integrates ZnO nanowires on optical fiber surface is synthesized. • The UV assisted growth of ZnO nanowires shows preferred orientation and better quality. • A mechanism of growing ZnO nanowires under UV irradiation is proposed. - Abstract: In this paper, a novel approach was developed for the enhanced growth of ZnO nanowires on optical fiber surface. The method combined a hydrothermal process with the efficient UV irradiation from the fiber core, and the effects of UV irradiation on the growth behavior of ZnO nanowires were investigated. The results show that UV irradiation had great effects on the preferred growth orientation and the quality of the ZnO nanowires. The crystallization velocity along the c-axis would increase rapidly with the increase of the irradiation power, while the growth process in the lateral direction was marginally affected by the irradiation. The structure of ZnO nanowires also shows less oxygen vacancy with UV irradiation of higher power. The developed approach is applicable for the efficient growth of nanowires on the fiber surface, and the ZnO nanowires/optical fiber hybrid structures have great potentials for a wide variety of applications such as optical fiber sensors and probes.

Permanent bending and alignment of ZnO nanowires

Energy Technology Data Exchange (ETDEWEB)

Borschel, Christian; Spindler, Susann; Oertel, Michael; Ronning, Carsten [Institut fuer Festkoerperphysik, Friedrich-Schiller-Universitaet Jena, Max-Wien-Platz 1, 07743 Jena (Germany); Lerose, Damiana [MPI fuer Mikrostrukturphysik, Weinberg 2, 06120 Halle/Saale (Germany); Institut fuer Photonische Technologien, Albert-Einstein-Strasse 9, 07745 Jena (Germany); Bochmann, Arne [Institut fuer Photonische Technologien, Albert-Einstein-Strasse 9, 07745 Jena (Germany); Christiansen, Silke H. [Institut fuer Photonische Technologien, Albert-Einstein-Strasse 9, 07745 Jena (Germany); MPI fuer die Physik des Lichts, Guenther-Scharowsky-Str. 1, 91058 Erlangen (Germany); Nietzsche, Sandor [Zentrum fuer Elektronenmikroskopie, Friedrich-Schiller-Universitaet Jena, Ziegelmuehlenweg 1, 07743 Jena (Germany)

2011-07-01

Ion beams can be used to bend or re-align nanowires permanently, after they have been grown. We have irradiated ZnO nanowires with ions of different species and energy, achieving bending and alignment in various directions. We study the bending of single nanowires as well as the simultaneous alignment of large ensembles of ZnO nanowires in detail. Computer simulations show that the bending is initiated by ion beam induced damage. Dislocations are identified to relax stresses and make the bending and alignment permanent and resistant against annealing procedures.

Growth of ZnO nanowires on polypropylene membrane surface—Characterization and reactivity

Energy Technology Data Exchange (ETDEWEB)

Bojarska, Marta, E-mail: m.bojarska@ichip.pw.edu.pl [Warsaw University of Technology, Faculty of Chemical and Process Engineering, Waryńskiego 1, 00-645 Warsaw (Poland); Lehrstuhl für Technische Chemie II, Universität Duisburg-Essen, Essen 45117 (Germany); Nowak, Bartosz, E-mail: novakbartosz@gmail.com [Warsaw University of Technology, Faculty of Chemical and Process Engineering, Waryńskiego 1, 00-645 Warsaw (Poland); Skowroński, Jarosław, E-mail: jaroslaw.skowronski@itee.radom.pl [Institute for Sustainable Technologies—National Research Institute, Pułaskiego 6/10, 26-600 Radom (Poland); Piątkiewicz, Wojciech, E-mail: w.piatkiewicz@polymemtech.com [Institute for Sustainable Technologies—National Research Institute, Pułaskiego 6/10, 26-600 Radom (Poland); PolymemTech Sp. z o.o., al. Niepodległości 118/90, 02-577 Warsaw (Poland); Gradoń, Leon, E-mail: l.gradon@ichip.pw.edu.pl [Warsaw University of Technology, Faculty of Chemical and Process Engineering, Waryńskiego 1, 00-645 Warsaw (Poland)

2017-01-01

Highlights: • ZnO nanowires were grown on a polypropylene microfiltration capillary membrane. • Plasma treatment was used for membrane activation and hydrophilization. • The photocatalytic/antibacterial properties were studied upon light irradiation. • PP/ZnO nanowires membrane show good photocatalytic and antibacterial activity. • We report a new method for obtaining reactive membranes with ZnO nanowires. - Abstract: Need for a new membrane is clearly visible in recent studies, mostly due to the fouling phenomenon. Authors, focused on problem of biofouling caused by microorganisms that are present in water environment. An attempt to form a new membrane with zinc oxide (ZnO) nanowires was made; where plasma treatment was used as a first step of modification followed by chemical bath deposition. Such membrane will exhibit additional reactive properties. ZnO, because of its antibacterial and photocatalytic properties, is more and more often used in commercial applications. The authors used SEM imaging, measurement of the contact angle, XRD and the FT–IR analysis for membrane characterization. Amount of ZnO deposited on membrane surface was also investigated by dithizone method. Photocatalytic properties of such membranes were examined through methylene blue and humic acid degradation in laboratory scale modules with LEDs as either: wide range white or UV light source. Antibacterial and antifouling properties of polypropylene membranes modified with ZnO nanowires were examined through a series of tests involving microorganisms: model gram-positive and −negative bacteria. The obtained results showed that it is possible to modify the membrane surface in such a way, that additional reactive properties will be given. Thus, not only did the membrane become a physical barrier, but also turned out to be a reactive one.

Fabrication of ZnO Nanowires Arrays by Anodization and High-Vacuum Die Casting Technique, and Their Piezoelectric Properties

Science.gov (United States)

Kuo, Chin-Guo; Chang, Ho; Wang, Jian-Hao

2016-01-01

In this investigation, anodic aluminum oxide (AAO) with arrayed and regularly arranged nanopores is used as a template in the high-vacuum die casting of molten zinc metal (Zn) into the nanopores. The proposed technique yields arrayed Zn nanowires with an aspect ratio of over 600. After annealing, arrayed zinc oxide (ZnO) nanowires are obtained. Varying the anodizing time yields AAO templates with thicknesses of approximately 50 μm, 60 μm, and 70 μm that can be used in the fabrication of nanowires of three lengths with high aspect ratios. Experimental results reveal that a longer nanowire generates a greater measured piezoelectric current. The ZnO nanowires that are fabricated using an alumina template are anodized for 7 h and produce higher piezoelectric current of up to 69 pA. PMID:27023546

Fabrication of ZnO Nanowires Arrays by Anodization and High-Vacuum Die Casting Technique, and Their Piezoelectric Properties.

Science.gov (United States)

Kuo, Chin-Guo; Chang, Ho; Wang, Jian-Hao

2016-03-24

In this investigation, anodic aluminum oxide (AAO) with arrayed and regularly arranged nanopores is used as a template in the high-vacuum die casting of molten zinc metal (Zn) into the nanopores. The proposed technique yields arrayed Zn nanowires with an aspect ratio of over 600. After annealing, arrayed zinc oxide (ZnO) nanowires are obtained. Varying the anodizing time yields AAO templates with thicknesses of approximately 50 μm, 60 μm, and 70 μm that can be used in the fabrication of nanowires of three lengths with high aspect ratios. Experimental results reveal that a longer nanowire generates a greater measured piezoelectric current. The ZnO nanowires that are fabricated using an alumina template are anodized for 7 h and produce higher piezoelectric current of up to 69 pA.

The fabrication of ZnO nanowire field-effect transistors by roll-transfer printing

Science.gov (United States)

Chang, Yi-Kuei; Hong, Franklin Chau-Nan

2009-05-01

A method with the potential to fabricate large-area nanowire field-effect transistors (NW-FETs) was demonstrated in this study. Using a high-speed roller (20-80 cm min-1), transfer printing was successfully employed to transfer vertically aligned zinc oxide (ZnO) nanowires grown on a donor substrate to a polydimethylsiloxane (PDMS) stamp and then print the ordered ZnO nanowire arrays on the received substrate for the fabrication of NW-FETs. ZnO NW-FETs fabricated by this method exhibit high performances with a threshold voltage of around 0.25 V, a current on/off ratio as high as 105, a subthreshold slope of 360 mV/dec, and a field-effect mobility of around 90 cm2 V-1 s-1. The excellent device characteristics suggest that the roll-transfer printing technique, which is compatible with the roll-to-roll (R2R) process and operated in atmosphere, has a good potential for the high-speed fabrication of large-area nanowire transistors for flexible devices and flat panel displays.

The fabrication of ZnO nanowire field-effect transistors by roll-transfer printing

International Nuclear Information System (INIS)

Chang, Y-K; Hong, Franklin Chau-Nan

2009-01-01

A method with the potential to fabricate large-area nanowire field-effect transistors (NW-FETs) was demonstrated in this study. Using a high-speed roller (20-80 cm min -1 ), transfer printing was successfully employed to transfer vertically aligned zinc oxide (ZnO) nanowires grown on a donor substrate to a polydimethylsiloxane (PDMS) stamp and then print the ordered ZnO nanowire arrays on the received substrate for the fabrication of NW-FETs. ZnO NW-FETs fabricated by this method exhibit high performances with a threshold voltage of around 0.25 V, a current on/off ratio as high as 10 5 , a subthreshold slope of 360 mV/dec, and a field-effect mobility of around 90 cm 2 V -1 s -1 . The excellent device characteristics suggest that the roll-transfer printing technique, which is compatible with the roll-to-roll (R2R) process and operated in atmosphere, has a good potential for the high-speed fabrication of large-area nanowire transistors for flexible devices and flat panel displays.

The fabrication of ZnO nanowire field-effect transistors by roll-transfer printing

Energy Technology Data Exchange (ETDEWEB)

Chang, Y-K; Hong, Franklin Chau-Nan [Department of Chemical Engineering, National Cheng Kung University, 1 University Road, Tainan 70101, Taiwan (China)], E-mail: hong@mail.ncku.edu.tw

2009-05-13

A method with the potential to fabricate large-area nanowire field-effect transistors (NW-FETs) was demonstrated in this study. Using a high-speed roller (20-80 cm min{sup -1}), transfer printing was successfully employed to transfer vertically aligned zinc oxide (ZnO) nanowires grown on a donor substrate to a polydimethylsiloxane (PDMS) stamp and then print the ordered ZnO nanowire arrays on the received substrate for the fabrication of NW-FETs. ZnO NW-FETs fabricated by this method exhibit high performances with a threshold voltage of around 0.25 V, a current on/off ratio as high as 10{sup 5}, a subthreshold slope of 360 mV/dec, and a field-effect mobility of around 90 cm{sup 2} V{sup -1} s{sup -1}. The excellent device characteristics suggest that the roll-transfer printing technique, which is compatible with the roll-to-roll (R2R) process and operated in atmosphere, has a good potential for the high-speed fabrication of large-area nanowire transistors for flexible devices and flat panel displays.

ZnO nanowire-based glucose biosensors with different coupling agents

Energy Technology Data Exchange (ETDEWEB)

Jung, Juneui [Department of Chemical and Biomolecular Engineering, Yonsei University, 50 Yonsei-ro, Seodaemun-gu, Seoul 120-749 (Korea, Republic of); Lim, Sangwoo, E-mail: swlim@yonsei.ac.kr [Department of Chemical and Biomolecular Engineering, Yonsei University, 50 Yonsei-ro, Seodaemun-gu, Seoul 120-749 (Korea, Republic of)

2013-01-15

Highlights: Black-Right-Pointing-Pointer Fabrication of ZnO nanowire-based glucose biosensors using different coupling agents. Black-Right-Pointing-Pointer Highest sensitivity for (3-aminopropyl)methyldiethoxysilane-treated biosensor. Black-Right-Pointing-Pointer Larger amount of glucose oxidase and lower electron transfer resistance for (3-aminopropyl)methyldiethoxysilane-treated biosensor. - Abstract: ZnO-nanowire-based glucose biosensors were fabricated by immobilizing glucose oxidase (GOx) onto a linker attached to ZnO nanowires. Different coupling agents were used, namely (3-aminopropyl)trimethoxysilane (APTMS), (3-aminopropyl)triethoxysilane (APTES), and (3-aminopropyl)methyldiethoxysilane (APS), to increase the affinity of GOx binding to ZnO nanowires. The amount of GOx immobilized on the ZnO nanowires, the performance, sensitivity, and Michaelis-Menten constant of each biosensor, and the electron transfer resistance through the biosensor were all measured in order to investigate the effect of the coupling agent on the ZnO nanowire-based biosensor. Among the different biosensors, the APS-treated biosensor had the highest sensitivity (17.72 {mu}A cm{sup -2} mM{sup -1}) and the lowest Michaelis-Menten constant (1.37 mM). Since APS-treated ZnO nanowires showed the largest number of C-N groups and the lowest electron transfer resistance through the biosensor, we concluded that these properties were the key factors in the performance of APS-treated glucose biosensors.

ZnO nanowire-based glucose biosensors with different coupling agents

International Nuclear Information System (INIS)

Jung, Juneui; Lim, Sangwoo

2013-01-01

Highlights: ► Fabrication of ZnO nanowire-based glucose biosensors using different coupling agents. ► Highest sensitivity for (3-aminopropyl)methyldiethoxysilane-treated biosensor. ► Larger amount of glucose oxidase and lower electron transfer resistance for (3-aminopropyl)methyldiethoxysilane-treated biosensor. - Abstract: ZnO-nanowire-based glucose biosensors were fabricated by immobilizing glucose oxidase (GOx) onto a linker attached to ZnO nanowires. Different coupling agents were used, namely (3-aminopropyl)trimethoxysilane (APTMS), (3-aminopropyl)triethoxysilane (APTES), and (3-aminopropyl)methyldiethoxysilane (APS), to increase the affinity of GOx binding to ZnO nanowires. The amount of GOx immobilized on the ZnO nanowires, the performance, sensitivity, and Michaelis–Menten constant of each biosensor, and the electron transfer resistance through the biosensor were all measured in order to investigate the effect of the coupling agent on the ZnO nanowire-based biosensor. Among the different biosensors, the APS-treated biosensor had the highest sensitivity (17.72 μA cm −2 mM −1 ) and the lowest Michaelis–Menten constant (1.37 mM). Since APS-treated ZnO nanowires showed the largest number of C-N groups and the lowest electron transfer resistance through the biosensor, we concluded that these properties were the key factors in the performance of APS-treated glucose biosensors.

Growth and photoluminescence of vertically aligned ZnO nanowires/nanowalls

Energy Technology Data Exchange (ETDEWEB)

Fang Fang; Zhao Dongxu; Li Binghui; Zhang Zhenzhong; Zhang Jiying; Shen Dezhen, E-mail: dxzhao2000@yahoo.com.c [Key Laboratory of Excited State Processes, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, 16 East Nan-Hu Road, Open Economic Zone Changchun 130033 (China)

2009-07-07

By controlling the incoming gas flow, vertically aligned ZnO nanowires and nanowalls have been successfully synthesized on a Si (1 0 0) substrate by the simple physical vapour deposition method. The growth process of the ZnO nanowalls was observed by adjusting the growth time. The probable growth mechanisms of the ZnO nanowires and nanowalls were discussed in detail. In contrast to the photoluminescence results of nanowires, an enhancement of the LO phonon signal was observed in ZnO nanowalls, which was attributed to an additional channel of electron-phonon coupling induced by the residual strains in the ZnO nanowalls during the coalescence growth process.

Mechanical transfer of ZnO nanowires for a flexible and conformal piezotronic strain sensor

Science.gov (United States)

Jenkins, Kory; Yang, Rusen

2017-07-01

We demonstrate a truly conformal and flexible piezotronic strain sensor using zinc oxide (ZnO) nanowires. Well-aligned, vertical ZnO nanowires are grown by chemical vapor deposition on a silicon wafer with a hydrothermally grown ZnO seed layer. The nanowires are infiltrated with polydimethylsiloxane and mechanically transferred from the silicon substrate. Plasma etching exposes the top surface of the nanowires before deposition of a gold (Au) top electrode. The bottom electrode is formed by silver paint which also adheres the sensor to the measured structure. To demonstrate the sensor’s ability to conform to complex surfaces, a stepped shaft with a shoulder fillet is used. The sensor is attached to the shoulder fillet of the stepped shaft, conforming to both the circumference of the shaft, and the radius of the fillet. A periodic bending displacement is applied to the end of the shaft. The strain induces a piezoelectric potential in the ZnO nanowires which controls the barrier height and conductivity at the gold/ZnO interface, by what is known as the piezotronic effect. The conductivity change is measured for periodically applied strains. The nonlinear current-voltage (I-V) response of the device is due to the Schottky contact between the ZnO nanowires and gold electrode. The geometry of the stepped shaft corresponds to a known stress concentration factor, and the strain experienced by the shaft is estimated with a COMSOL FEA study. The conformal nature of the strain sensor makes it suitable for structural monitoring applications involving complex geometries and stress concentrators.

Synthesis of vertical arrays of ultra long ZnO nanowires on noncrystalline substrates

International Nuclear Information System (INIS)

Kwon, Bong Jun; Lee, Kyung Moon; Shin, Hae-Young; Kim, Jinwoong; Liu, Jinzhang; Yoon, Seokhyun; Lee, Soonil; Ahn, Y.H.; Park, Ji-Yong

2012-01-01

Highlights: ► Arrays of vertical ultra-long ZnO nanowires with lengths upto 300 μm. ► Controls of lengths and diameters of vertical arrays of ZnO nanowires on SiO 2 substrates. ► Luminescent and electrical properties of ZnO nanowires prepared with different growth conditions. - Abstract: Vertically aligned arrays of ultralong ZnO nanowires were synthesized on SiO 2 substrates with carbothermal vapor phase transport method with Au seeding layer. High density of vertically aligned ZnO nanowires with lengths from a few to ∼300 μm could be grown by controlling growth conditions. Supply of high concentration of Zn vapor and control of the ratio between Zn vapor and oxygen are found to have the most significant effects on the growth of long ZnO nanowires in the vapor–solid growth mechanism. The nanowires are of high crystalline quality as confirmed by various structural, compositional, and luminescent measurements. Luminescent and electrical properties of ZnO nanowires with different growth conditions were also investigated.

Improved seedless hydrothermal synthesis of dense and ultralong ZnO nanowires

International Nuclear Information System (INIS)

Tian Jinghua; Hu Jie; Li Sisi; Zhang Fan; Liu Jun; Shi Jian; Li Xin; Chen Yong; Tian Zhongqun

2011-01-01

Seedless hydrothermal synthesis has been improved by introducing an adequate content of ammonia into the nutrient solution, allowing the fabrication of dense and ultralong ZnO nanowire arrays over large areas on a substrate. The presence of ammonia in the nutrient solution facilitates the high density nucleation of ZnO on the substrate which is critical for the nanowire growth. In order to achieve an optimal growth, the growth conditions have been studied systematically as a function of ammonia content, growth temperature and incubation time. The effect of polyethyleneimine (PEI) has also been studied but shown to be of no benefit to the nucleation of ZnO. Ultradense and ultralong ZnO nanowires could be obtained under optimal growth conditions, showing no fused structure at the foot of the nanowire arrays. Due to different reaction kinetics, four growth regimes could be attributed, including the first fast growth, equilibrium phase, second fast growth and final erosion. Combining this simple method with optical lithography, ZnO nanowires could be grown selectively on patterned areas. In addition, the as-grown ZnO nanowires could be used for the fabrication of a piezoelectric nanogenerator. Compared to the device of ZnO nanowires made by other methods, a more than twice voltage output has been obtained, thereby proving an improved performance of our growth method.

Synthesis of ZnO nanowire arrays on ZnO−TiO{sub 2} mixed oxide seed layer for dye sensitized solar cell applications

Energy Technology Data Exchange (ETDEWEB)

Marimuthu, T. [Advanced Materials and Thin Film Physics Lab, Department of Physics, Alagappa University, Karaikudi (India); Anandhan, N., E-mail: anandhan_kn@rediffmail.com [Advanced Materials and Thin Film Physics Lab, Department of Physics, Alagappa University, Karaikudi (India); Thangamuthu, R. [Electrochemical Materials Science Division, CSIR-Central Electrochemical Research Institute, Karaikudi (India); Mummoorthi, M. [Advanced Materials and Thin Film Physics Lab, Department of Physics, Alagappa University, Karaikudi (India); Ravi, G. [Photonic Crystal Lab, Department of Physics, Alagappa University, Karaikudi (India)

2016-08-25

ZnO nanowire arrays (NWAs) were synthesized on ZnO−TiO{sub 2} mixed oxide seeded FTO conducting glass plate by two-step sol-gel and hydrothermal method, respectively. X-ray diffraction patterns reveal the presence of mixed and hexagonal phases in seed layer and NWAs, respectively. Scanning electron microscope images showed that the FTO glass plate is uniformly covered with grains and a few nanorods in seed layer and dense NWAs are vertically grown on the seed layer. The hexagonal structure and high crystal quality have been confirmed by micro Raman spectra. Photoluminescence spectra also present that NWAs have high crystal quality and less atomic defects. UV spectra indicate that NWAs are absorbed more dye molecules and it has the band gap equal to bulk material. The efficiency of ZnO−TiO{sub 2} mixed oxide seed layer and ZnO NWAs is found to be 0.56 and 0.84% respectively. Electrochemical impedance spectra reveal that NWAs DSSC has high charge transfer recombination resistance than the seed layer DSSC. - Highlights: • ZnO nanowire arrays were synthesized by two-step sol-gel and hydrothermal method. • The crystal structure and crystalline quality of films are confirmed by Raman spectra. • The emission properties of films are investigated by photoluminescence spectra. • ZnO nanowire arrays (NWAs) have higher charge transfer recombination resistance. • The conversion efficiency of the seed layer and NWAs is to be 0.56 and 0.84%.

Fabrication of ZnO Nanowires Arrays by Anodization and High-Vacuum Die Casting Technique, and Their Piezoelectric Properties

Directory of Open Access Journals (Sweden)

Chin-Guo Kuo

2016-03-01

Full Text Available In this investigation, anodic aluminum oxide (AAO with arrayed and regularly arranged nanopores is used as a template in the high-vacuum die casting of molten zinc metal (Zn into the nanopores. The proposed technique yields arrayed Zn nanowires with an aspect ratio of over 600. After annealing, arrayed zinc oxide (ZnO nanowires are obtained. Varying the anodizing time yields AAO templates with thicknesses of approximately 50 μm, 60 μm, and 70 μm that can be used in the fabrication of nanowires of three lengths with high aspect ratios. Experimental results reveal that a longer nanowire generates a greater measured piezoelectric current. The ZnO nanowires that are fabricated using an alumina template are anodized for 7 h and produce higher piezoelectric current of up to 69 pA.

Young's modulus of individual ZnO nanowires

International Nuclear Information System (INIS)

Jiang, Dayong; Tian, Chunguang; Liu, Qingfei; Zhao, Man; Qin, Jieming; Hou, Jianhua; Gao, Shang; Liang, Qingcheng; Zhao, Jianxun

2014-01-01

We used a contact-mode atomic force microscopy (AFM) to study the mechanical properties of an individual ZnO nanowire in the open air. It is noteworthy that the Young's modulus can be determined by an AFM tip compressing a single nanowire on a rigid substrate, which can bring more repeatability and accuracy for the measurements. In particular, the calculated radial Young's modulus of ZnO nanowires is consistent with the data of ZnO bulks and thin films. We also present the Young's modulus with different diameters, and all these are discussed deeply

Surfactant-assisted carbon doping in ZnO nanowires using Poly Ethylene Glycol (PEG)

Energy Technology Data Exchange (ETDEWEB)

Amanullah, Malik; Javed, Qurat-ul-Ain, E-mail: Quratulain@sns.nust.edu.pk; Rizwan, Syed

2016-09-01

Zinc Oxide (ZnO) provides unique properties owing to its wide bandgap, large resistivity range and possibility to tune the physical properties. The surfactant assisted carbon doping was made possible due to the lowering of surface energy. The ZnO and carbon doped ZnO (C-ZnO) nanowires fabricated by hydrothermal process, Poly Ethylene Glycol (PEG) is used as surfactant in hydrothermal synthesis followed by post growth annealing treatment at 600 °C–700 °C. At 5%–10% of diluted PEG carbon is doped in ZnO. The crystallinity, structural morphology and elemental composition analysis for ZnO and C-ZnO nanowires were carried out using X-ray diffraction, scanning electron microscopy and energy dispersive X-ray spectroscopy techniques respectively. Carbon doping in ZnO nanowires in the presence of different percentage of surfactant is explained by calculating the change in surface energy with respect to change in PEG molecule concentration. It was found that the surface energy per molecule modulates from 3.92 × 10{sup −8} J/m{sup 2} to 8.16 × 10{sup −7} J/m{sup 2} in the PEG concentration range between 5% and 10%. Our results provides a new theoretical calculations, implemented on real system, to observe the details of PEG-assisted Carbon doping in II-VI semiconductor nanowires. - Highlights: • ZnO and C-ZnO was synthesized by PEG assisted post growth annealing process. • At 5% and 10% of PEG successful synthesis of C-ZnO was found. • XRD, SEM and EDX characterizations confirm the successful synthesis of ZnO and C-ZnO. • Change in surface energy with respect to PEG molecule concentration was calculated.

Effect of growth temperature on photoluminescence and piezoelectric characteristics of ZnO nanowires

Energy Technology Data Exchange (ETDEWEB)

Water, Walter [Institute of Electro-Optical and Materials Science, National Formosa University, Yunlin 632, Taiwan (China); Fang, T.-H. [Institute of Electro-Optical and Materials Science, National Formosa University, Yunlin 632, Taiwan (China); Institute of Mechanical and Electromechanical Engineering, National Formosa University, Yunlin 632, Taiwan (China)], E-mail: fang.tehua@msa.hinet.net; Ji, L.-W.; Lee, C.-C. [Institute of Electro-Optical and Materials Science, National Formosa University, Yunlin 632, Taiwan (China)

2009-02-25

ZnO nanowire arrays were synthesized on Au-coated silicon (1 0 0) substrates by using vapour-liquid-solid process in this work. The effect of growth temperatures on the crystal structure and the surface morphology of ZnO nanowires were investigated by X-ray diffraction and scanning electron microscope. The absorption and optical characteristics of the nanowires were examined by Ultraviolet/Visible spectroscopy, and photoluminescence, respectively. The photoluminescence results exhibited ZnO nanowires had an ultraviolet and blue emission at 383 and 492 nm. Then a nanogenerator with ZnO nanowire arrays was fabricated and demonstrated Schottky-like current-voltage characteristics.

Enhancement in the photodetection of ZnO nanowires by introducing surface-roughness-induced traps

International Nuclear Information System (INIS)

Park, Woojin; Jo, Gunho; Hong, Woong-Ki; Yoon, Jongwon; Choe, Minhyeok; Ji, Yongsung; Kim, Geunjin; Kahng, Yung Ho; Lee, Kwanghee; Lee, Takhee; Lee, Sangchul; Wang, Deli

2011-01-01

We investigated the enhanced photoresponse of ZnO nanowire transistors that was introduced with surface-roughness-induced traps by a simple chemical treatment with isopropyl alcohol (IPA). The enhanced photoresponse of IPA-treated ZnO nanowire devices is attributed to an increase in adsorbed oxygen on IPA-induced surface traps. The results of this study revealed that IPA-treated ZnO nanowire devices displayed higher photocurrent gains and faster photoswitching speed than transistors containing unmodified ZnO nanowires. Thus, chemical treatment with IPA can be a useful method for improving the photoresponse of ZnO nanowire devices.

Ultraviolet photodetection of flexible ZnO nanowire sheets in polydimethylsiloxane polymer

OpenAIRE

Jinzhang Liu; Nunzio Motta; Soonil Lee

2012-01-01

Summary ZnO nanowires are normally exposed to an oxygen atmosphere to achieve high performance in UV photodetection. In this work we present results on a UV photodetector fabricated using a flexible ZnO nanowire sheet embedded in polydimethylsiloxane (PDMS), a gas-permeable polymer, showing reproducible UV photoresponse and enhanced photoconduction. PDMS coating results in a reduced response speed compared to that of a ZnO nanowire film in air. The rising speed is slightly reduced, while the ...

Magnetic properties in (Mn,Fe)-codoped ZnO nanowire

International Nuclear Information System (INIS)

Cao, Huawei; Lu, Pengfei; Cong, Zixiang; Yu, Zhongyuan; Cai, Ningning; Zhang, Xianlong; Gao, Tao; Wang, Shumin

2013-01-01

Using the first-principles density functional theory, we have studied the electronic structures and magnetic properties of Mn/Fe codoped ZnO nanowires systematically. The calculated results of formation energy indicate that the configuration of the lowest energy where Mn and Fe atoms form nearest neighbors on the outer cylindrical surface layer along the [0001] direction, will be determined. The magnetic coupling of 8 types of Mn/Fe codoped ZnO nanowires was investigated and ferromagnetic state was found in certain configurations. The mechanism is from the fierce hybridization between 3d of Mn and Fe with O 2p near the Fermi level. The relative energy difference for configuration VIII is 0.221 eV, which indicates that room temperature ferromagnetism could be obtained in such a system and Mn/Fe codoped ZnO nanowires are a promising nanoscale spintronic material. - Highlights: • The stable structure prefers that Mn/Fe form nearest neighbors on the outer surface. • The fierce p–d hybridization is responsible for ferromagnetic (FM) coupling. • Mn/Fe codoped ZnO nanowire is a promising FM semiconductor material

Magnetic properties in (Mn,Fe)-codoped ZnO nanowire

Energy Technology Data Exchange (ETDEWEB)

Cao, Huawei [Key Laboratory of Information Photonics and Optical Communications (Beijing University of Posts and Telecommunications), Ministry of Education, Beijing 100876 (China); Lu, Pengfei, E-mail: photon.bupt@gmail.com [Key Laboratory of Information Photonics and Optical Communications (Beijing University of Posts and Telecommunications), Ministry of Education, Beijing 100876 (China); Cong, Zixiang [School of Information and Communication Engineering, Beijing University of Posts and Telecommunications, Beijing 100976 (China); Yu, Zhongyuan; Cai, Ningning; Zhang, Xianlong [Key Laboratory of Information Photonics and Optical Communications (Beijing University of Posts and Telecommunications), Ministry of Education, Beijing 100876 (China); Gao, Tao [Institute of Atomic and Molecular Physics, Sichuan University, Chengdu 610065 (China); Wang, Shumin [Photonics Laboratory, Department of Microtechnology and Nanoscience, Chalmers University of Technology, 41296 Gothenburg (Sweden); State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050 (China)

2013-12-02

Using the first-principles density functional theory, we have studied the electronic structures and magnetic properties of Mn/Fe codoped ZnO nanowires systematically. The calculated results of formation energy indicate that the configuration of the lowest energy where Mn and Fe atoms form nearest neighbors on the outer cylindrical surface layer along the [0001] direction, will be determined. The magnetic coupling of 8 types of Mn/Fe codoped ZnO nanowires was investigated and ferromagnetic state was found in certain configurations. The mechanism is from the fierce hybridization between 3d of Mn and Fe with O 2p near the Fermi level. The relative energy difference for configuration VIII is 0.221 eV, which indicates that room temperature ferromagnetism could be obtained in such a system and Mn/Fe codoped ZnO nanowires are a promising nanoscale spintronic material. - Highlights: • The stable structure prefers that Mn/Fe form nearest neighbors on the outer surface. • The fierce p–d hybridization is responsible for ferromagnetic (FM) coupling. • Mn/Fe codoped ZnO nanowire is a promising FM semiconductor material.

Synthesis of high aspect ratio ZnO nanowires with an inexpensive handcrafted electrochemical setup

Energy Technology Data Exchange (ETDEWEB)

Taheri, Ali, E-mail: at1361@aut.ac.ir, E-mail: atahery@aeoi.org.ir [Nuclear Science and Technology Institute (Iran, Islamic Republic of); Saramad, Shahyar; Setayeshi, Saeed [Amirkabir University of Technology, Faculty of Energy Engineering and Physics (Iran, Islamic Republic of)

2016-12-15

In this work, high aspect ratio zinc oxide nanowires are synthesized using templated one-step electrodeposition technique. Electrodeposition of the nanowires is done using a handcrafted electronic system. Nuclear track-etched polycarbonate membrane is used as a template to form the high aspect ratio nanowires. The result of X-ray diffraction and scanning electron microscopy shows that nanowires with a good crystallinity and an aspect ratio of more than 30 can be achieved in a suitable condition. The height of electrodeposited nanowires reaches to about 11 μm. Based on the obtained results, high aspect ratio ZnO nanowires can be formed using inexpensive electrodeposition setup with an acceptable quality.

Transport and structural characterization of solution-processable doped ZnO nanowires

KAUST Repository

Noriega, Rodrigo

2009-08-18

The use of ZnO nanowires has become a widespread topic of interest in optoelectronics. In order to correctly assess the quality, functionality, and possible applications of such nanostructures it is important to accurately understand their electrical and optical properties. Aluminum- and gallium-doped crystalline ZnO nanowires were synthesized using a low-temperature solution-based process, achieving dopant densities of the order of 1020 cm-3. A non-contact optical technique, photothermal deflection spectroscopy, is used to characterize ensembles of ZnO nanowires. By modeling the free charge carrier absorption as a Drude metal, we are able to calculate the free carrier density and mobility. Determining the location of the dopant atoms in the ZnO lattice is important to determine the doping mechanisms of the ZnO nanowires. Solid-state NMR is used to distinguish between coordination environments of the dopant atoms.

Growth of aligned ZnO nanowires via modified atmospheric pressure chemical vapor deposition

Energy Technology Data Exchange (ETDEWEB)

Zhao, Yuping; Li, Chengchen [Faculty of Science, Jiangsu University, Zhenjiang, Jiangsu, 212013 (China); Chen, Mingming, E-mail: andychain@live.cn [Faculty of Science, Jiangsu University, Zhenjiang, Jiangsu, 212013 (China); Yu, Xiao; Chang, Yunwei [Faculty of Science, Jiangsu University, Zhenjiang, Jiangsu, 212013 (China); Chen, Anqi [State Key Laboratory of Optoelectronic Materials and Technologies, School of Electronics & Information Technology, Sun Yat-Sen University, Guangzhou Higher Education Mega Center (University Town), Guangzhou, 510006 (China); Zhu, Hai, E-mail: zhuhai5@mail.sysu.edu.cn [State Key Laboratory of Optoelectronic Materials and Technologies, School of Electronics & Information Technology, Sun Yat-Sen University, Guangzhou Higher Education Mega Center (University Town), Guangzhou, 510006 (China); Tang, Zikang, E-mail: zktang@umac.mo [State Key Laboratory of Optoelectronic Materials and Technologies, School of Electronics & Information Technology, Sun Yat-Sen University, Guangzhou Higher Education Mega Center (University Town), Guangzhou, 510006 (China); The Institute of Applied Physics and Materials Engineering, University of Macau, Avenida da Universidade, Taipa, Macau (China)

2016-12-09

In this work, we report the growth of high-quality aligned ZnO nanowires via a facile atmospheric pressure chemical vapor deposition (CVD) method. The CVD reactor chamber used was more complicated than a conventional one due to the quartz boats loaded with sources (ZnO/C) and substrates being inserted into a semi-open quartz tube, and then placed inside the CVD reactor. The semi-open quartz tube played a very important role in growing the ZnO nanowires, and demonstrated that the transportation properties of Zn and O vapor differ from those in the conventional CVD reactor chamber. Aligned ZnO nanowires were successfully obtained, though they were only found at substrates located upstream. The very high crystalline quality of the obtained ZnO nanowires was demonstrated by high-resolution transmission electron microscopy and room temperature photoluminescence investigations. Such ZnO nanowires with high crystalline quality may provide opportunities for the fabrication of ZnO-based nano-devices in future. - Highlights: • High-quality aligned ZnO nanowires were obtained via modified chemical vapor deposition under atmospheric pressure. • The semi-open quartz tube plays very important roles in growing ZnO nanowires. • The transportation properties of Zn and O vapor differ from those in the conventional CVD reactor chamber.

Growth of aligned ZnO nanowires via modified atmospheric pressure chemical vapor deposition

International Nuclear Information System (INIS)

Zhao, Yuping; Li, Chengchen; Chen, Mingming; Yu, Xiao; Chang, Yunwei; Chen, Anqi; Zhu, Hai; Tang, Zikang

2016-01-01

In this work, we report the growth of high-quality aligned ZnO nanowires via a facile atmospheric pressure chemical vapor deposition (CVD) method. The CVD reactor chamber used was more complicated than a conventional one due to the quartz boats loaded with sources (ZnO/C) and substrates being inserted into a semi-open quartz tube, and then placed inside the CVD reactor. The semi-open quartz tube played a very important role in growing the ZnO nanowires, and demonstrated that the transportation properties of Zn and O vapor differ from those in the conventional CVD reactor chamber. Aligned ZnO nanowires were successfully obtained, though they were only found at substrates located upstream. The very high crystalline quality of the obtained ZnO nanowires was demonstrated by high-resolution transmission electron microscopy and room temperature photoluminescence investigations. Such ZnO nanowires with high crystalline quality may provide opportunities for the fabrication of ZnO-based nano-devices in future. - Highlights: • High-quality aligned ZnO nanowires were obtained via modified chemical vapor deposition under atmospheric pressure. • The semi-open quartz tube plays very important roles in growing ZnO nanowires. • The transportation properties of Zn and O vapor differ from those in the conventional CVD reactor chamber.

Control of the ZnO nanowires nucleation site using microfluidic channels.

Science.gov (United States)

Lee, Sang Hyun; Lee, Hyun Jung; Oh, Dongcheol; Lee, Seog Woo; Goto, Hiroki; Buckmaster, Ryan; Yasukawa, Tomoyuki; Matsue, Tomokazu; Hong, Soon-Ku; Ko, HyunChul; Cho, Meoung-Whan; Yao, Takafumi

2006-03-09

We report on the growth of uniquely shaped ZnO nanowires with high surface area and patterned over large areas by using a poly(dimethylsiloxane) (PDMS) microfluidic channel technique. The synthesis uses first a patterned seed template fabricated by zinc acetate solution flowing though a microfluidic channel and then growth of ZnO nanowire at the seed using thermal chemical vapor deposition on a silicon substrate. Variations the ZnO nanowire by seed pattern formed within the microfluidic channel were also observed for different substrates and concentrations of the zinc acetate solution. The photocurrent properties of the patterned ZnO nanowires with high surface area, due to their unique shape, were also investigated. These specialized shapes and patterning technique increase the possibility of realizing one-dimensional nanostructure devices such as sensors and optoelectric devices.

Dynamics of the deep-level emission in ZnO nanowires

Energy Technology Data Exchange (ETDEWEB)

Hou, Dongchao; Rueckmann, Ilja; Voss, Tobias [Institut fuer Festkoerperphysik, Universitaet Bremen (Germany)

2010-07-01

Due to its wide direct band gap and large exciton binding energy (60 meV), ZnO nanowires possess an efficient near band-edge emission (NBE) in UV range. Additional energy levels in the band gap of ZnO, commonly introduced by point defects such as oxygen or zinc vacancies and Cu impurities, can largely weaken the UV emission by providing extra recombination routes for the electrons in conduction band. In ZnO nanowires this deep-level emission band (DLE) is expected to be largely activated by tunneling processes of holes trapped in the surface depletion layer after optical excitation. We studied the dependence of the DLE and NBE intensities of ZnO nanowires on the excitation power at different temperatures. For the experiments, the fundamental (1064 nm) and frequency-tripled (355 nm) pulses of an Nd:YAG microchip laser were used. The additional infrared laser radiation was used to directly populate the defect levels with electrons from the valence band. Our results show that the additional infrared photons lead to a reduction of the DLE while the NBE is enhanced. We discuss the implications of our results for the models of DLE in ZnO nanowires.

Electrodeposition of ZnO nano-wires lattices with a controlled morphology

International Nuclear Information System (INIS)

Elias, J.; Tena-Zaera, R.; Katty, A.; Levy-Clement, C.

2006-01-01

In this work, it is shown that the electrodeposition is a changeable low cost method which allows, according to the synthesis conditions, to obtain not only plane thin layers of ZnO but different nano-structures too. In a first part, are presented the formation conditions of a compact thin layer of nanocrystalline ZnO electrodeposited on a conducing glass substrate. This layer plays a buffer layer role for the deposition of a lattice of ZnO nano-wires. The step of nano-wires nucleation is not only determined by the electrochemical parameters but by the properties of the buffer layer too as the grain sizes and its thickness. In this context, the use of an electrodeposition method in two steps allows to control the nano-wires length and diameter and their density. The morphology and the structural and optical properties of these nano-structures have been analyzed by different techniques as the scanning and transmission electron microscopy, the X-ray diffraction and the optical spectroscopy. These studies show that ZnO nano-structures are formed of monocrystalline ZnO nano-wires, presenting a great developed surface and a great optical transparency in the visible. These properties make ZnO a good material for the development of nano-structured photovoltaic cells as the extremely thin absorber cells (PV ETA) or those with dye (DSSC) which are generally prepared with porous polycrystalline TiO 2 . Its replacement by a lattice of monocrystalline ZnO nano-wires allows to reduce considerably the number of grain boundaries and in consequence to improve the transport of the electrons. The results are then promising for the PV ETA cells with ZnO nano-wires. (O.M.)

Single ZnO nanowire-PZT optothermal field effect transistors.

Science.gov (United States)

Hsieh, Chun-Yi; Lu, Meng-Lin; Chen, Ju-Ying; Chen, Yung-Ting; Chen, Yang-Fang; Shih, Wan Y; Shih, Wei-Heng

2012-09-07

A new type of pyroelectric field effect transistor based on a composite consisting of single zinc oxide nanowire and lead zirconate titanate (ZnO NW-PZT) has been developed. Under infrared (IR) laser illumination, the transconductance of the ZnO NW can be modulated by optothermal gating. The drain current can be increased or decreased by IR illumination depending on the polarization orientation of the Pb(Zr(0.3)Ti(0.7))O(3) (PZT) substrate. Furthermore, by combining the photocurrent behavior in the UV range and the optothermal gating effect in the IR range, the wide spectrum of response of current by light offers a variety of opportunities for nanoscale optoelectronic devices.

Biofunctionalization of zinc oxide nanowires for DNA sensory applications

Directory of Open Access Journals (Sweden)

Rudolph Bettina

2011-01-01

Full Text Available Abstract We report on the biofunctionalization of zinc oxide nanowires for the attachment of DNA target molecules on the nanowire surface. With the organosilane glycidyloxypropyltrimethoxysilane acting as a bifunctional linker, amino-modified capture molecule oligonucleotides have been immobilized on the nanowire surface. The dye-marked DNA molecules were detected via fluorescence microscopy, and our results reveal a successful attachment of DNA capture molecules onto the nanowire surface. The electrical field effect induced by the negatively charged attached DNA molecules should be able to control the electrical properties of the nanowires and gives way to a ZnO nanowire-based biosensing device.

Ultraviolet photodetection of flexible ZnO nanowire sheets in polydimethylsiloxane polymer.

Science.gov (United States)

Liu, Jinzhang; Motta, Nunzio; Lee, Soonil

2012-01-01

ZnO nanowires are normally exposed to an oxygen atmosphere to achieve high performance in UV photodetection. In this work we present results on a UV photodetector fabricated using a flexible ZnO nanowire sheet embedded in polydimethylsiloxane (PDMS), a gas-permeable polymer, showing reproducible UV photoresponse and enhanced photoconduction. PDMS coating results in a reduced response speed compared to that of a ZnO nanowire film in air. The rising speed is slightly reduced, while the decay time is prolonged by about a factor of four. We conclude that oxygen molecules diffusing in PDMS are responsible for the UV photoresponse.

Piezoelectric Nanogenerator Using p-Type ZnO Nanowire Arrays

KAUST Repository

Lu, Ming-Pei; Song, Jinhui; Lu, Ming-Yen; Chen, Min-Teng; Gao, Yifan; Chen, Lih-Juann; Wang, Zhong Lin

2009-01-01

Using phosphorus-doped ZnO nanowire (NW) arrays grown on silicon substrate, energy conversion using the p-type ZnO NWs has been demonstrated for the first time. The p-type ZnO NWs produce positive output voltage pulses when scanned by a conductive

Adsorption property of volatile molecules on ZnO nanowires ...

Indian Academy of Sciences (India)

7

Keywords: ZnO; interaction; ammonia; band structure; density of states. 1. 2. 3 .... Virtual NanoLab [18] software was utilized to construct the ZnO nanowires with 24 Zn ..... But in reality, the ZnO NWs shows a better response (80.2) towards NH3.

Gallium ion implantation greatly reduces thermal conductivity and enhances electronic one of ZnO nanowires

Directory of Open Access Journals (Sweden)

Minggang Xia

2014-05-01

Full Text Available The electrical and thermal conductivities are measured for individual zinc oxide (ZnO nanowires with and without gallium ion (Ga+ implantation at room temperature. Our results show that Ga+ implantation enhances electrical conductivity by one order of magnitude from 1.01 × 103 Ω−1m−1 to 1.46 × 104 Ω−1m−1 and reduces its thermal conductivity by one order of magnitude from 12.7 Wm−1K−1 to 1.22 Wm−1K−1 for ZnO nanowires of 100 nm in diameter. The measured thermal conductivities are in good agreement with those in theoretical simulation. The increase of electrical conductivity origins in electron donor doping by Ga+ implantation and the decrease of thermal conductivity is due to the longitudinal and transverse acoustic phonons scattering by Ga+ point scattering. For pristine ZnO nanowires, the thermal conductivity decreases only two times when its diameter reduces from 100 nm to 46 nm. Therefore, Ga+-implantation may be a more effective method than diameter reduction in improving thermoelectric performance.

Optical and electro-catalytic properties of bundled ZnO nanowires grown on a ITO substrate

International Nuclear Information System (INIS)

Xia Cao; Wang Ning; Wang Long

2010-01-01

Bundled wurtzite zinc oxide (ZnO) nanowires were fabricated in a facile manner on an ITO-conducting substrate via a microemulsion route without using any hard template or external electric/magnetic field. Structure and properties of the as-prepared ZnO electrode were investigated using scanning electron microscopy, X-ray diffraction, photoluminescence, Raman spectroscopy, as well as electrochemical tests. The ZnO electrode shows excellent optical and electrocatalytic ability, which may find further applications such as optoelectronics or as sensors as well as other modern industrial areas.

Ultraviolet photodetection of flexible ZnO nanowire sheets in polydimethylsiloxane polymer

Directory of Open Access Journals (Sweden)

Jinzhang Liu

2012-05-01

Full Text Available ZnO nanowires are normally exposed to an oxygen atmosphere to achieve high performance in UV photodetection. In this work we present results on a UV photodetector fabricated using a flexible ZnO nanowire sheet embedded in polydimethylsiloxane (PDMS, a gas-permeable polymer, showing reproducible UV photoresponse and enhanced photoconduction. PDMS coating results in a reduced response speed compared to that of a ZnO nanowire film in air. The rising speed is slightly reduced, while the decay time is prolonged by about a factor of four. We conclude that oxygen molecules diffusing in PDMS are responsible for the UV photoresponse.

Enhanced Piezoelectric Behavior of PVDF Nanocomposite by AC Dielectrophoresis Alignment of ZnO Nanowires

Directory of Open Access Journals (Sweden)

Kyungwho Choi

2017-01-01

Full Text Available In contrast to commercial piezoelectric ceramics, lead-free materials such as ZnO and a polymer matrix are proper candidates for use in ecofriendly applications. In this article, the authors represent a technique using ZnO nanowires with a polyvinylidene fluoride (PVDF matrix in a piezoelectric polymer composite. By aligning the nanowires in the matrix in a desired direction by AC dielectrophoresis, the piezoelectric behavior was enhanced. The dielectric constant of the composite was improved by increasing the concentration of the ZnO nanowires as well. Specifically, the resulting dielectric constant shows an improvement of 400% with aligned ZnO nanowires by increasing the poling effect compared to that of a randomly oriented nanowire composite without a poling process.

Effects of mechanical strain on optical properties of ZnO nanowire

Science.gov (United States)

Vazinishayan, Ali; Lambada, Dasaradha Rao; Yang, Shuming; Zhang, Guofeng; Cheng, Biyao; Woldu, Yonas Tesfaye; Shafique, Shareen; Wang, Yiming; Anastase, Ndahimana

2018-02-01

The main objective of this study is to investigate the influences of mechanical strain on optical properties of ZnO nanowire (NW) before and after embedding ZnS nanowire into the ZnO nanowire, respectively. For this work, commercial finite element modeling (FEM) software package ABAQUS and three-dimensional (3D) finite-difference time-domain (FDTD) methods were utilized to analyze the nonlinear mechanical behavior and optical properties of the sample, respectively. Likewise, in this structure a single focused Gaussian beam with wavelength of 633 nm was used as source. The dimensions of ZnO nanowire were defined to be 12280 nm in length and 103.2 nm in diameter with hexagonal cross-section. In order to investigate mechanical properties, three-point bending technique was adopted so that both ends of the model were clamped with mid-span under loading condition and then the physical deformation model was imported into FDTD solutions to study optical properties of ZnO nanowire under mechanical strain. Moreover, it was found that increase in the strain due to the external load induced changes in reflectance, transmittance and absorptance, respectively.

Effects of mechanical strain on optical properties of ZnO nanowire

Directory of Open Access Journals (Sweden)

Ali Vazinishayan

2018-02-01

Full Text Available The main objective of this study is to investigate the influences of mechanical strain on optical properties of ZnO nanowire (NW before and after embedding ZnS nanowire into the ZnO nanowire, respectively. For this work, commercial finite element modeling (FEM software package ABAQUS and three-dimensional (3D finite-difference time-domain (FDTD methods were utilized to analyze the nonlinear mechanical behavior and optical properties of the sample, respectively. Likewise, in this structure a single focused Gaussian beam with wavelength of 633 nm was used as source. The dimensions of ZnO nanowire were defined to be 12280 nm in length and 103.2 nm in diameter with hexagonal cross-section. In order to investigate mechanical properties, three-point bending technique was adopted so that both ends of the model were clamped with mid-span under loading condition and then the physical deformation model was imported into FDTD solutions to study optical properties of ZnO nanowire under mechanical strain. Moreover, it was found that increase in the strain due to the external load induced changes in reflectance, transmittance and absorptance, respectively.

Hydrothermal Growth and Application of ZnO Nanowire Films with ZnO and TiO2Buffer Layers in Dye-Sensitized Solar Cells

Directory of Open Access Journals (Sweden)

Jiang Chunhua

2009-01-01

Full Text Available Abstract This paper reports the effects of the seed layers prepared by spin-coating and dip-coating methods on the morphology and density of ZnO nanowire arrays, thus on the performance of ZnO nanowire-based dye-sensitized solar cells (DSSCs. The nanowire films with the thick ZnO buffer layer (~0.8–1 μm thick can improve the open circuit voltage of the DSSCs through suppressing carrier recombination, however, and cause the decrease of dye loading absorbed on ZnO nanowires. In order to further investigate the effect of TiO2buffer layer on the performance of ZnO nanowire-based DSSCs, compared with the ZnO nanowire-based DSSCs without a compact TiO2buffer layer, the photovoltaic conversion efficiency and open circuit voltage of the ZnO DSSCs with the compact TiO2layer (~50 nm thick were improved by 3.9–12.5 and 2.4–41.7%, respectively. This can be attributed to the introduction of the compact TiO2layer prepared by sputtering method, which effectively suppressed carrier recombination occurring across both the film–electrolyte interface and the substrate–electrolyte interface.

The Modulation of Optical Property and its Correlation with Microstructures of ZnO Nanowires

Directory of Open Access Journals (Sweden)

Hope Greg

2009-01-01

Full Text Available Abstract ZnO nanowires with both good crystallinity and oxygen vacancies defects were synthesized by thermal oxidation of Zn substrate pretreated in concentrated sulfuric acid under the air atmosphere, Ar- and air-mixed gas stream. The photoluminescence spectra reveal that only near-band-edge (NBE emission peak was observed for the sample grown in the air atmosphere; the broad blue–green and the red-shifted NBE emission peaks were observed for the sample grown in the mixed gas stream, indicating that the sample grown in the mixed gas stream has a defective structure and its optical properties can be modulated by controlling its structure. The high-resolution transmission electron microscope and the corresponding structural simulation confirm that the oxygen vacancies exist in the crystal of the nanowires grown in the mixed gas stream. The ZnO nanowires with oxygen vacancies defects exhibit better photocatalytic activity than the nanowires with good crystallinity. The photocatalytic process obeys the rules of first-order kinetic reaction, and the rate constants were calculated.

Catalyst free growth of ZnO nanowires on graphene and graphene oxide and its enhanced photoluminescence and photoresponse

International Nuclear Information System (INIS)

Biroju, Ravi K; Giri, P K; Tilak, Nikhil; Rajender, Gone; Dhara, S

2015-01-01

We demonstrate the graphene assisted catalyst free growth of ZnO nanowires (NWs) on chemical vapor deposited (CVD) and chemically processed graphene buffer layers at a relatively low growth temperature (580 °C) in the presence and absence of ZnO seed layers. In the case of CVD graphene covered with rapid thermal annealed ZnO buffer layer, the growth of vertically aligned ZnO NWs takes place, while the direct growth on CVD graphene, chemically derived graphene (graphene oxide and graphene quantum dots) without ZnO seed layer resulted in randomly oriented sparse ZnO NWs. Growth mechanism was studied from high resolution transmission electron microscopy and Raman spectroscopy of the hybrid structure. Further, we demonstrate strong UV, visible photoluminescence (PL) and enhanced photoconductivity (PC) from the CVD graphene–ZnO NWs hybrids as compared to the ZnO NWs grown without the graphene buffer layer. The evolution of crystalinity in ZnO NWs grown with ZnO seed layer and graphene buffer layer is correlated with the Gaussian line shape of UV and visible PL. This is further supported by the strong Raman mode at 438 cm −1 significant for the wurtzite phase of the ZnO NWs grown on different graphene substrates. The effect of the thickness of ZnO seed layers and the role of graphene buffer layers on the aligned growth of ZnO NWs and its enhanced PC are investigated systematically. Our results demonstrate the catalyst free growth and superior performance of graphene–ZnO NW hybrid UV photodetectors as compared to the bare ZnO NW based photodetectors. (paper)

Photovoltaic device on a single ZnO nanowire p–n homojunction

International Nuclear Information System (INIS)

Cho, Hak Dong; Zakirov, Anvar S; Yuldashev, Shavkat U; Kang, Tae Won; Ahn, Chi Won; Yeo, Yung Kee

2012-01-01

A photovoltaic device was successfully grown solely based on the single ZnO p–n homojunction nanowire. The ZnO nanowire p–n diode consists of an as-grown n-type segment and an in situ arsenic-doped p-type segment. This p–n homojunction acts as a good photovoltaic cell, producing a photocurrent almost 45 times larger than the dark current under reverse-biased conditions. Our results demonstrate that the present ZnO p–n homojunction nanowire can be used as a self-powered ultraviolet photodetector as well as a photovoltaic cell, which can also be used as an ultralow electrical power source for nanoscale electronic, optoelectronic and medical devices. (paper)

Earth-Abundant Oxygen Evolution Catalysts Coupled onto ZnO Nanowire Arrays for Efficient Photoelectrochemical Water Cleavage

Science.gov (United States)

Jiang, Chaoran; Moniz, Savio J A; Khraisheh, Majeda; Tang, Junwang

2014-01-01

ZnO has long been considered as a model UV-driven photoanode for photoelectrochemical water splitting, but its performance has been limited by fast charge-carrier recombination, extremely poor stability in aqueous solution, and slow kinetics of water oxidation. These issues were addressed by applying a strategy of optimization and passivation of hydrothermally grown 1D ZnO nanowire arrays. The length and diameter of bare ZnO nanowires were optimized by varying the growth time and precursor concentration to achieve optimal photoelectrochemical performance. The addition of earth-abundant cobalt phosphate (Co-Pi) and nickel borate (Ni-B) oxygen evolution catalysts onto ZnO nanowires resulted in substantial cathodic shifts in onset potential to as low as about 0.3 V versus the reversible hydrogen electrode (RHE) for Ni-B/ZnO, for which a maximum photocurrent density of 1.1 mA cm−2 at 0.9 V (vs. RHE) with applied bias photon-to-current efficiency of 0.4 % and an unprecedented near-unity incident photon-to-current efficiency at 370 nm. In addition the potential required for saturated photocurrent was dramatically reduced from 1.6 to 0.9 V versus RHE. Furthermore, the stability of these ZnO nanowires was significantly enhanced by using Ni-B compared to Co-Pi due to its superior chemical robustness, and it thus has additional functionality as a stable protecting layer on the ZnO surface. These remarkable enhancements in both photocatalytic activity and stability directly address the current severe limitations in the use of ZnO-based photoelectrodes for water-splitting applications, and can be applied to other photoanodes for efficient solar-driven fuel synthesis. PMID:25156820

Influence of ZnO encapsulation on the luminescence property of GeO2 nanowires

International Nuclear Information System (INIS)

Kim, Hyunsu; Jin, Changhyun; Park, Sunghoon; Lee, Chongmu; Kwon, Youngjae; Lee, Sangmin

2012-01-01

GeO 2 -core/ZnO-shell nanowires were synthesized on (100) Si substrates by thermal evaporation of Ge powders, followed by atomic layer deposition of ZnO. X-ray diffraction, scanning electron microscopy and transmission electron microscopy analyses showed that the mean diameter and lengths of the core-shell nanowires were approximately 100 nm and from a few tens to a few hundreds of micrometers, respectively. Photoluminescence measurements showed that pure GeO 2 nanowires had a violet emission band centered at approximately 430 nm. In contrast, GeO 2 -core/ZnO-shell nanowires had both a sharp near-band edge (NBE) emission band centered at approximately 380 nm and a broad deep-level (DL) emission band centered at approximately 590 nm, which is characteristic of ZnO. GeO 2 -core/ZnO-shell nanowires showed a higher intensity ratio of NBE emission to DL emission than either GeO 2 or ZnO nanowires. In addition, the origin of the enhancement of luminescence in GeO 2 nanowires by ZnO encapsulation is discussed.

Electrodeposition of Cu-doped ZnO nanowire arrays and heterojunction formation with p-GaN for color tunable light emitting diode applications

International Nuclear Information System (INIS)

Lupan, O.; Pauporté, T.; Viana, B.; Aschehoug, P.

2011-01-01

Highlights: ► High quality copper-doped zinc oxide nanowires were electrochemically grown at low temperature. ► ZnO:Cu nanowires have been epitaxially grown on Mg-doped p-GaN single-crystalline layers. ► The (ZnO:Cu NWs)/(p-GaN:Mg) heterojunction was used to fabricate a light-emitting diode structure. ► The photo- and electroluminescence emission was red-shifted to the violet spectral region compared to pure ZnO. ► The results are of importance for band-gap engineering of ZnO and for color-tunable LED. - Abstract: Copper-doped zinc oxide (ZnO:Cu) nanowires (NWs) were electrochemically deposited at low temperature on fluor-doped tin oxide (FTO) substrates. The electrochemical behavior of the Cu–Zn system for Cu-doped ZnO electrodeposition was studied and the electrochemical reaction mechanism is discussed. The synthesized ZnO arrayed layers were investigated by using SEM, XRD, EDX, photoluminescence and Raman techniques. X-ray diffraction analysis demonstrates a decrease in the lattice parameters of Cu-doped ZnO NWs. Structural analyses show that the nanomaterial is of hexagonal structure with the Cu incorporated in ZnO NWs probably by substituting zinc in the host lattice. Photoluminescence studies on pure and Cu-doped ZnO NWs shows that the near band edge emission is red-shifted by about 5 or 12 nm depending on Cu(II) concentration in the electrolytic bath solution (3 or 6 μmol l −1 ). Cu-doped ZnO NWs have been also epitaxially grown on Mg doped p-GaN single-crystalline layers and the (ZnO:Cu NWs)/(p-GaN:Mg) heterojunction has been used to fabricate a light-emitting diode (LED) structure. The emission was red-shifted to the visible violet spectral region compared to pure ZnO. The present work demonstrates the ability of electrodeposition to produce high quality ZnO nanowires with tailored optical properties by doping. The obtained results are of great importance for further studies on bandgap engineering of ZnO, for color-tunable LED applications

Homojunction p-n photodiodes based on As-doped single ZnO nanowire

International Nuclear Information System (INIS)

Cho, H. D.; Zakirov, A. S.; Yuldashev, Sh. U.; Kang, T. W.; Ahn, C. W.; Yeo, Y. K.

2013-01-01

Photovoltaic device was successfully grown solely based on the single ZnO p-n homojunction nanowire. The ZnO nanowire p-n diode consists of an as-grown n-type segment and an in-situ arsenic doped p-type segment. This p-n homojunction acts as a good photovoltaic cell, producing a photocurrent almost 45 times larger than the dark current under reverse-biased condition. Our results demonstrate that present ZnO p-n homojunction nanowire can be used as a self-powered ultraviolet photodetector as well as a photovoltaic cell, which can also be used as an ultralow electrical power source for nano-scale electronic, optoelectronic, and medical devices

Growth Mechanism Studies of ZnO Nanowires: Experimental Observations and Short-Circuit Diffusion Analysis.

Science.gov (United States)

Shih, Po-Hsun; Wu, Sheng Yun

2017-07-21

Plenty of studies have been performed to probe the diverse properties of ZnO nanowires, but only a few have focused on the physical properties of a single nanowire since analyzing the growth mechanism along a single nanowire is difficult. In this study, a single ZnO nanowire was synthesized using a Ti-assisted chemical vapor deposition (CVD) method to avoid the appearance of catalytic contamination. Two-dimensional energy dispersive spectroscopy (EDS) mapping with a diffusion model was used to obtain the diffusion length and the activation energy ratio. The ratio value is close to 0.3, revealing that the growth of ZnO nanowires was attributed to the short-circuit diffusion.

Magnetic properties of ZnO nanowires with Li dopants and Zn vacancies

Energy Technology Data Exchange (ETDEWEB)

Guan, Xinhong; Cai, Ningning [Key Laboratory of Information Photonics and Optical Communications (Beijing University of Posts and Telecommunications), Ministry of Education, P.O. Box 72, Beijing 100876 (China); Yang, Chuanghua [School of Physics and Telecommunication Engineering, Shanxi University of Technology (SNUT), Hanzhong 723001, Shanxi (China); Chen, Jun [Beijing Applied Physics and Computational Mathematics, Beijing 100088 (China); Lu, Pengfei, E-mail: photon.bupt@gmail.com [Key Laboratory of Information Photonics and Optical Communications (Beijing University of Posts and Telecommunications), Ministry of Education, P.O. Box 72, Beijing 100876 (China)

2016-04-30

The electronic and magnetic properties of ZnO nanowire with Li dopants and vacancies have been investigated using first-principles density functional theory. It is found that the Zn vacancy can induce magnetism while increasing the formation energy of the system. However, the calculated results indicate that the introduction of Li-dopants will reduce the formation energy of system. We also have studied the magnetic couplings with vacancies as well as their corresponding configurations with Li-dopants for four configurations of ZnO nanowires. The results show that ferromagnetic properties can be improved/reversed after the introduction of Li-dopants. Ferromagnetic mechanism is originated from the fierce p–p hybridization of O near the Fermi level. We find that ferromagnetism of Li-doped ZnO nanowires with Zn vacancies can be realized at room temperature and they are promising spintronic materials. - Highlights: • Li-dopants will reduce the formation energy of ZnO nanowires with Zn vacancy. • The fierce p–p hybridization of O near Fermi level is responsible for FM properties. • Li-doped ZnO–V{sub Zn} nanowire is a promising FM semiconductor material.

Effects of ZnO nanowire synthesis parameters on the photovoltaic performance of dye-sensitized solar cells

Energy Technology Data Exchange (ETDEWEB)

Jung, Juneui; Myoung, Jihyun; Lim, Sangwoo, E-mail: swlim@yonsei.ac.kr

2012-06-30

Determination of the effects of ZnO nanowires on the efficiency of ZnO nanowire-based dye-sensitized solar cells (DSSCs) is important. In this study, we determined the effects of different OH{sup -} precursors, concentrations, the ratio of zinc nitrate to hexamethylene tetramine (HMT), and the hydrothermal synthesis temperature on the physical, crystal, and optical properties of ZnO nanowires and investigated the performance of the resulting DSSCs. We observed that ZnO nanowires synthesized using an equimolar ratio of HMT to zinc nitrate yielded a DSSC with high incident photon-to-current efficiency (IPCE), cell efficiency, short circuit current density (J{sub sc}), and fill factor (FF), and low ZnO-dye-electrolyte interface resistance due to an increased amount of dye and a decreased density of defects. Furthermore, ZnO nanowires made using optimal concentrations and ratios of zinc nitrate to HMT had a high surface area and low defect density. All the photovoltaic performance parameters of DSSCs assessed such as IPCE, cell efficiency, J{sub sc}, open circuit potential (V{sub oc}), and FF increased with synthesis temperature, which was related to a decrease in the resistance at the ZnO-dye-electrolyte interface. We attributed these results to an increased amount of dye facilitated by a large nanowire surface area and fast electron transfer because of the improved crystalline structure of the ZnO nanowires and their low defect density. By optimizing the ZnO nanowires, we increased DSSC efficiency to 0.26% using ZnO nanowires synthesized with 25 mM of both zinc nitrate and HMT at 90 Degree-Sign C, while only a 0.02% increase in efficiency was obtained when NH{sub 4}OH was used as OH{sup -} precursor. - Highlights: Black-Right-Pointing-Pointer Fabrication of ZnO nanowire-based dye-sensitized solar cells (DSSCs) Black-Right-Pointing-Pointer Correlation of synthesis parameters with ZnO nanowires' properties and DSSC performance Black

Enhanced Response Speed of ZnO Nanowire Photodetector by Coating with Photoresist

Directory of Open Access Journals (Sweden)

Xing Yang

2016-01-01

Full Text Available Spin-coating photoresist film on ZnO nanowire (NW was introduced into the fabrication procedure to improve photoresponse and recovery speed of a ZnO NW ultraviolet photoelectric detector. A ZnO NW was first assembled on prefabricated electrodes by dielectrophoresis. Then, photoresist was spin-coated on the nanowire. Finally, a metal layer was electrodeposited on the nanowire-electrode contacts. The response properties and I-V characteristics of ZnO NW photodetector were investigated by measuring the electrical current under different conditions. Measurement results demonstrated that the detector has an enhanced photoresponse and recovery speed after coating the nanowire with photoresist. The photoresponse and recovery characteristics of detectors with and without spin-coating were compared to demonstrate the effects of photoresist and the enhancement of response and recovery speed of the photodetector is ascribed to the reduced surface absorbed oxygen molecules and binding effect on the residual oxygen molecules after photoresist spin-coating. The results demonstrated that surface coating may be an effective and simple way to improve the response speed of the photoelectric device.

pH-Dependent Toxicity of High Aspect Ratio ZnO Nanowires in Macrophages Due to Intracellular Dissolution

KAUST Repository

H. Müller, Karin

2010-11-23

High-aspect ratio ZnO nanowires have become one of the most promising products in the nanosciences within the past few years with a multitude of applications at the interface of optics and electronics. The interaction of zinc with cells and organisms is complex, with both deficiency and excess causing severe effects. The emerging significance of zinc for many cellular processes makes it imperative to investigate the biological safety of ZnO nanowires in order to guarantee their safe economic exploitation. In this study, ZnO nanowires were found to be toxic to human monocyte macrophages (HMMs) at similar concentrations as ZnCl2. Confocal microscopy on live cells confirmed a rise in intracellular Zn2+ concentrations prior to cell death. In vitro, ZnO nanowires dissolved very rapidly in a simulated body fluid of lysosomal pH, whereas they were comparatively stable at extracellular pH. Bright-field transmission electron microscopy (TEM) showed a rapid macrophage uptake of ZnO nanowire aggregates by phagocytosis. Nanowire dissolution occurred within membrane-bound compartments, triggered by the acidic pH of the lysosomes. ZnO nanowire dissolution was confirmed by scanning electron microscopy/energy-dispersive X-ray spectrometry. Deposition of electron-dense material throughout the ZnO nanowire structures observed by TEM could indicate adsorption of cellular components onto the wires or localized zinc-induced protein precipitation. Our study demonstrates that ZnO nanowire toxicity in HMMs is due to pH-triggered, intracellular release of ionic Zn2+ rather than the high-aspect nature of the wires. Cell death had features of necrosis as well as apoptosis, with mitochondria displaying severe structural changes. The implications of these findings for the application of ZnO nanowires are discussed. © 2010 American Chemical Society.

Growth of Vertically Aligned ZnO Nanowire Arrays Using Bilayered Metal Catalysts

Science.gov (United States)

2012-01-01

12] J. P. Liu, C. X. Guo, C. M. Li et al., “Carbon-decorated ZnO nanowire array: a novel platform for direct electrochemistry of enzymes and...cited. Vertically aligned, high-density ZnO nanowires (NWs) were grown for the first time on c-plane sapphire using binary alloys of Ni/Au or Cu/Au as...deleterious to the ZnO NW array growth. Significant improvement of the Au adhesion on the substrate was noted, opening the potential for direct

Self-assembled ZnO agave-like nanowires and anomalous superhydrophobicity

Energy Technology Data Exchange (ETDEWEB)

Yang, Y H; Li, Z Y; Wang, B; Wang, C X; Chen, D H; Yang, G W [State Key Laboratory of Optoelectronic Materials and Technologies, School of Physics Science and Engineering, Zhongshan University, Guangzhou 510275 (China)

2005-09-07

Thin films of ZnO agave-like nanowires were prepared on amorphous carbon thin layers on silicon substrates using thermal chemical vapour transport and condensation without any metal catalysts. The unusual superhydrophobicity of the fabricated surface was measured; the water contact angle reaches 151.1 deg. On the basis of experimental and theoretical analyses, it appears likely that the biomimetic microcomposite and nanocomposite surfaces of the prepared thin films of ZnO agave-like nanowires are responsible for the excellent superhydrophobicity.

Electrospun ZnO Nanowires as Gas Sensors for Ethanol Detection

Directory of Open Access Journals (Sweden)

Huang Po-Jung

2009-01-01

Full Text Available Abstract ZnO nanowires were produced using an electrospinning method and used in gas sensors for the detection of ethanol at 220 °C. This electrospinning technique allows the direct placement of ZnO nanowires during their synthesis to bridge the sensor electrodes. An excellent sensitivity of nearly 90% was obtained at a low ethanol concentration of 10 ppm, and the rest obtained at higher ethanol concentrations, up to 600 ppm, all equal to or greater than 90%.

Ferromagnetism in Gd doped ZnO nanowires: A first principles study

KAUST Repository

Aravindh, S. Assa

2014-12-19

In several experimental studies, room temperature ferromagnetism in Gd-doped ZnO nanostructures has been achieved. However, the mechanism and the origin of the ferromagnetism remain controversial. We investigate the structural, magnetic, and electronic properties of Zn 48O48 nanowires doped with Gd, using density functional theory. Our findings indicate that substitutionally incorporated Gd atoms prefer occupying the surface Zn sites. Moreover, the formation energy increases with the distance between Gd atoms, signifying that no Gd-Gd segregation occurs in the nanowires within the concentration limit of ≤2%. Gd induces ferromagnetism in ZnO nanowires with magnetic coupling energy up to 21 meV in the neutral state, which increases with additional electron and O vacancy, revealing the role of carriers in magnetic exchange. The potential for achieving room temperature ferromagnetism and high TC in ZnO:Gd nanowires is evident from the large ferromagnetic coupling energy (200 meV) obtained with the O vacancy. Density of states shows that Fermi level overlaps with Gd f states with the introduction of O vacancy, indicating the possibility of s-f coupling. These results will assist in understanding experimental findings in Gd-doped ZnO nanowires.

Ferromagnetism in Gd doped ZnO nanowires: A first principles study

KAUST Repository

Aravindh, S. Assa; Schwingenschlö gl, Udo; Roqan, Iman S.

2014-01-01

In several experimental studies, room temperature ferromagnetism in Gd-doped ZnO nanostructures has been achieved. However, the mechanism and the origin of the ferromagnetism remain controversial. We investigate the structural, magnetic, and electronic properties of Zn 48O48 nanowires doped with Gd, using density functional theory. Our findings indicate that substitutionally incorporated Gd atoms prefer occupying the surface Zn sites. Moreover, the formation energy increases with the distance between Gd atoms, signifying that no Gd-Gd segregation occurs in the nanowires within the concentration limit of ≤2%. Gd induces ferromagnetism in ZnO nanowires with magnetic coupling energy up to 21 meV in the neutral state, which increases with additional electron and O vacancy, revealing the role of carriers in magnetic exchange. The potential for achieving room temperature ferromagnetism and high TC in ZnO:Gd nanowires is evident from the large ferromagnetic coupling energy (200 meV) obtained with the O vacancy. Density of states shows that Fermi level overlaps with Gd f states with the introduction of O vacancy, indicating the possibility of s-f coupling. These results will assist in understanding experimental findings in Gd-doped ZnO nanowires.

Highly sensitive uric acid biosensor based on individual zinc oxide micro/nanowires

International Nuclear Information System (INIS)

Zhao, Yanguang; Yan, Xiaoqin; Kang, Zhuo; Lin, Pei; Fang, Xiaofei; Lei, Yang; Ma, Siwei; Zhang, Yue

2013-01-01

We describe the use of individual zinc oxide (ZnO) micro/nanowires in an electrochemical biosensor for uric acid. The wires were synthesized by chemical vapor deposition and possess uniform morphology and high crystallinity as revealed by scanning electron microscopy, X-ray diffraction, and photoluminescence studies. The enzyme uricase was then immobilized on the surface of the ZnO micro/nanowires by physical adsorption, and this was proven by Raman spectroscopy and fluorescence microscopy. The resulting uric acid biosensor undergoes fast electron transfer between the active site of the enzyme and the surface of the electrode. It displays high sensitivity (89.74 μA cm −2 mM −1 ) and a wide linear analytical range (between 0.1 mM and 0.59 mM concentrations of uric acid). This study also demonstrates the potential of the use of individual ZnO micro/nanowires for the construction of highly sensitive nano-sized biosensors. (author)

Electrodeposition of ZnO nano-wires lattices with a controlled morphology; Electrodepot de reseaux de nanofils de ZnO a morphologie controlee

Energy Technology Data Exchange (ETDEWEB)

Elias, J.; Tena-Zaera, R.; Katty, A.; Levy-Clement, C. [Centre National de la Recherche Scientifique (CNRS), Lab. de Chimie Metallurgique des Terres Rares, UPR 209, 94 - Thiais (France)

2006-07-01

In this work, it is shown that the electrodeposition is a changeable low cost method which allows, according to the synthesis conditions, to obtain not only plane thin layers of ZnO but different nano-structures too. In a first part, are presented the formation conditions of a compact thin layer of nanocrystalline ZnO electrodeposited on a conducing glass substrate. This layer plays a buffer layer role for the deposition of a lattice of ZnO nano-wires. The step of nano-wires nucleation is not only determined by the electrochemical parameters but by the properties of the buffer layer too as the grain sizes and its thickness. In this context, the use of an electrodeposition method in two steps allows to control the nano-wires length and diameter and their density. The morphology and the structural and optical properties of these nano-structures have been analyzed by different techniques as the scanning and transmission electron microscopy, the X-ray diffraction and the optical spectroscopy. These studies show that ZnO nano-structures are formed of monocrystalline ZnO nano-wires, presenting a great developed surface and a great optical transparency in the visible. These properties make ZnO a good material for the development of nano-structured photovoltaic cells as the extremely thin absorber cells (PV ETA) or those with dye (DSSC) which are generally prepared with porous polycrystalline TiO{sub 2}. Its replacement by a lattice of monocrystalline ZnO nano-wires allows to reduce considerably the number of grain boundaries and in consequence to improve the transport of the electrons. The results are then promising for the PV ETA cells with ZnO nano-wires. (O.M.)

Quantum dots coupled ZnO nanowire-array panels and their photocatalytic activities.

Science.gov (United States)

Liao, Yulong; Que, Wenxiu; Zhang, Jin; Zhong, Peng; Yuan, Yuan; Qiu, Xinku; Shen, Fengyu

2013-02-01

Fabrication and characterization of a heterojunction structured by CdS quantum dots@ZnO nanowire-array panels were presented. Firstly, ZnO nanowire-array panels were prepared by using a chemical bath deposition approach where wurtzite ZnO nanowires with a diameter of about 100 nm and 3 microm in length grew perpendicularly to glass substrate. Secondly, CdS quantum dots were deposited onto the surface of the ZnO nanowire-arrays by using successive ion layer absorption and reaction method, and the CdS shell/ZnO core heterojunction were thus obtained. Field emission scanning electron microscopy and transmission electron microscope were employed to characterize the morphological properties of the as-obtained CdS quantum dots@ZnO nanowire-array panels. X-ray diffraction was adopted to characterize the crystalline properties of the as-obtained CdS quantum dots@ZnO nanowire-array panels. Methyl orange was taken as a model compound to confirm the photocatalytic activities of the CdS shell/ZnO core heterojunction. Results indicate that CdS with narrow band gap not only acts as a visible-light sensitizer but also is responsible for an effective charge separation.

"High Quantum Efficiency of Band-Edge Emission from ZnO Nanowires"

Energy Technology Data Exchange (ETDEWEB)

GARGAS, DANIEL; GAO, HANWEI; WANG, HUNGTA; PEIDONG, YANG

2010-12-01

External quantum efficiency (EQE) of photoluminescence as high as 20 percent from isolated ZnO nanowires were measured at room temperature. The EQE was found to be highly dependent on photoexcitation density, which underscores the importance of uniform optical excitation during the EQE measurement. An integrating sphere coupled to a microscopic imaging system was used in this work, which enabled the EQE measurement on isolated ZnO nanowires. The EQE values obtained here are significantly higher than those reported for ZnO materials in forms of bulk, thin films or powders. Additional insight on the radiative extraction factor of one-dimensional nanostructures was gained by measuring the internal quantum efficiency of individual nanowires. Such quantitative EQE measurements provide a sensitive, noninvasive method to characterize the optical properties of low-dimensional nanostructures and allow tuning of synthesis parameters for optimization of nanoscale materials.

Opto-mechano-electrical tripling in ZnO nanowires probed by photocurrent spectroscopy in a high-resolution transmission electron microscope

Energy Technology Data Exchange (ETDEWEB)

Zhang, C.; Golberg, D., E-mail: xuzhi@iphy.ac.cn, E-mail: golberg.dmitri@nims.go.jp [International Center for Materials Nanoarchitectonics (MANA), National Institute for Materials Science (NIMS), Namiki 1-1, Tsukuba, Ibaraki 3050044 (Japan); Graduate School of Pure and Applied Sciences, University of Tsukuba, Tennodai 1, Tsukuba, Ibaraki 3058577 (Japan); Xu, Z., E-mail: xuzhi@iphy.ac.cn, E-mail: golberg.dmitri@nims.go.jp [Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190 (China); Kvashnin, D. G. [National University of Science and Technology, MISIS, Leninskiy Prospect 4, Moscow 119049 (Russian Federation); Tang, D.-M.; Xue, Y. M.; Bando, Y. [International Center for Materials Nanoarchitectonics (MANA), National Institute for Materials Science (NIMS), Namiki 1-1, Tsukuba, Ibaraki 3050044 (Japan); Sorokin, P. B. [National University of Science and Technology, MISIS, Leninskiy Prospect 4, Moscow 119049 (Russian Federation); Moscow Institute of Physics and Technology, Institutsky Lane 9, Dolgoprudny 141700 (Russian Federation)

2015-08-31

Photocurrent spectroscopy of individual free-standing ZnO nanowires inside a high-resolution transmission electron microscope (TEM) is reported. By using specially designed optical in situ TEM system capable of scanning tunneling microscopy probing paired with light illumination, opto-mechano-electrical tripling phenomenon in ZnO nanowires is demonstrated. Splitting of photocurrent spectra at around 3.3 eV under in situ TEM bending of ZnO nanowires directly corresponds to nanowire deformation and appearance of expanded and compressed nanowire sides. Theoretical simulation of a bent ZnO nanowire has an excellent agreement with the experimental data. The splitting effect could be explained by a change in the valence band structure of ZnO nanowires due to a lattice strain. The strain-induced splitting provides important clues for future flexible piezo-phototronics.

Tunable field emission characteristics of ZnO nanowires coated with varied thickness of lanthanum boride thin films

International Nuclear Information System (INIS)

Zhao, C.X.; Li, Y.F.; Chen, Jun; Deng, S.Z.; Xu, N.S.

2013-01-01

Lanthanum boride (LaB x ) thin films with various thicknesses were deposited on ZnO nanowire arrays by electron beam evaporation. Field emission characteristics of ZnO nanowires show close dependence on LaB x coating thickness. The turn-on field increases with increasing LaB x coating thickness from 10 nm to 50 nm. The observed phenomena were explained by a model that the tunneling at ZnO/LaB x interface dominates the emission process. - Highlights: ► Coating thickness dependence of field emission characteristics of ZnO nanowires was observed from LaB x coated ZnO nanowires. ► More stable field emission was observed from ZnO nanowires with LaB x coating. ► A model was proposed that the tunneling at ZnO/LaB x interface dominates the emission process

Biofunctionalization of ZnO nanowires for DNA sensory applications

Energy Technology Data Exchange (ETDEWEB)

Schroeder, Ulrich Christian; Gnauck, Martin; Ronning, Carsten [Institute of Solid State Physics, University of Jena, Max-Wien-Platz 1, D-07743 Jena (Germany); Moeller, Robert; Rudolph, Bettina; Fritzsche, Wolfgang [Institut fuer Photonische Technologien e.V., Albert-Einstein-Strasse 9, D-07745 Jena (Germany)

2011-07-01

In recent years, DNA detecting systems have received a growing interest due to promising fields of application like DNA diagnostics, gene analysis, virus detection or forensic applications. Nanowire-based DNA biosensor allows both miniaturization and easy continuous monitoring of a detection signal by electrical means. The label free detection scheme based on electrochemical changes of the surface potential during immobilization of specific DNA probes was heretofore mainly studied for silicon. In this work a surface decoration process with bifunctional molecules known as silanization was applied to VLS-grown ZnO nanowires which both feature a large sensitivity for surface modification, are biocompatible and easy to synthesize as well. Successfully bound DNA was proved by fluorescence microscopy. Dielectrophoresis (DEP) was chosen and optimized for quickly contacting the ZnO nanowires. Furthermore, electrical signal characterization was performed in preparation for DNA sensory applications.

Growth of Horizonatal ZnO Nanowire Arrays on Any Substrate

KAUST Repository

Qin, Yong; Yang, Rusen; Wang, Zhong Lin

2008-01-01

A general method is presented for growing laterally aligned and patterned ZnO nanowire (NW) arrays on any substrate as long as it is flat. The orientation control is achieved using the combined effect from ZnO seed layer and the catalytically

SYNTHESIS AND PHOTOLUMINESCENCE STUDIES ON ZINC OXIDE NANOWIRES

Directory of Open Access Journals (Sweden)

Nguyen Ngoc Long

2017-11-01

Full Text Available Semiconductor single crystal ZnO nanowires have been successfully synthesized by a simple method based on thermal evaporation of ZnO powders mixed with graphite. Metallic catalysts, carrying gases, and vacuum conditions are not necessary. The x-ray diffraction (XRD analysis shows that the ZnO nanowires are highly crystallized and have a typical wurtzite hexagonal structure with lattice constants a = 0.3246 nm and c = 0.5203 nm. The scanning electron microscopy (SEM images of nanowires indicate that diameters of the ZnO nanowires normally range from 100 to 300 nm and their lengths are several tens of micrometers. Photoluminescence (PL and photoluminescence excitation (PLE spectra of the nanowires were measured in the range of temperature from 15 K to the room temperature. Photoluminescence spectra at low temperatures exhibit a group of ultraviolet (UV narrow peaks in the region 368 nm ~ 390 nm, and a blue-green very broad peak at 500 nm. Origin of the emission lines in PL spectra and the lines in PLE spectra is discussed.

Optoelectronic characterisation of an individual ZnO nanowire in contact with a micro-grid template

International Nuclear Information System (INIS)

Jiang Wei; Gao Hong; Xu Ling-Ling; Ma Jia-Ning; Zhang E; Wei Ping; Lin Jia-Qi

2011-01-01

Optoelectronic characterisation of an individual ZnO nanowire in contact with a micro-grid template has been studied. The low-cost micro-grid template made by photolithography is used to fabricate the ohmic contact metal electrodes. The current increases linearly with the bias, indicating good ohmic contacts between the nanowire and the electrodes. The resistivity of the ZnO nanowire is calculated to be 3.8 Ω·cm. We investigate the photoresponses of an individual ZnO nanowire under different light illumination using light emitting diodes (λ = 505 nm, 460 nm, 375 nm) as excitation sources in atmosphere. When individual ZnO nanowire is exposured to different light irradiation, we find that it is extremely sensitive to UV illumination; the conductance is much larger upon UV illumination than that in the dark at room temperature. This phenomenon may be related to the surface oxygen molecule adsorbtion, which indicates their potential application to the optoelectronic switching device. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

Improved efficiency in organic/inorganic hybrid solar cells by interfacial modification of ZnO nanowires with small molecules

International Nuclear Information System (INIS)

Chang, Sehoon; Park, Hyesung; Cheng, Jayce J; Rekemeyer, Paul H; Gradečak, Silvija

2014-01-01

We demonstrate improved photovoltaic performance of ZnO nanowire/poly(3-hexylthiophene) (P3HT) nanofiber hybrid devices using an interfacial modification of ZnO nanowires. Formation of cascade energy levels between the ZnO nanowire and P3HT nanofiber was achieved by interfacial modification of ZnO nanowires using small molecules tetraphenyldibenzoperiflanthene (DBP) and 3,4,9,10-perylenetetracarboxylic bisbenzimidazole (PTCBI). The successful demonstration of improved device performance owing to the cascade energy levels by small molecule modification is a promising approach toward highly efficient organic/inorganic hybrid solar cells. (paper)

Ferromagnetism in Gd doped ZnO nanowires: A first principles study

Energy Technology Data Exchange (ETDEWEB)

Aravindh, S. Assa; Schwingenschloegl, Udo, E-mail: udo.schwingenschloegl@kaust.edu.sa, E-mail: iman.roqan@kaust.edu.sa; Roqan, Iman S., E-mail: udo.schwingenschloegl@kaust.edu.sa, E-mail: iman.roqan@kaust.edu.sa [Physical Sciences and Engineering Division, King Abdullah University of Science and Technology (KAUST), Thuwal 23955-6900 (Saudi Arabia)

2014-12-21

In several experimental studies, room temperature ferromagnetism in Gd-doped ZnO nanostructures has been achieved. However, the mechanism and the origin of the ferromagnetism remain controversial. We investigate the structural, magnetic, and electronic properties of Zn{sub 48}O{sub 48} nanowires doped with Gd, using density functional theory. Our findings indicate that substitutionally incorporated Gd atoms prefer occupying the surface Zn sites. Moreover, the formation energy increases with the distance between Gd atoms, signifying that no Gd-Gd segregation occurs in the nanowires within the concentration limit of ≤2%. Gd induces ferromagnetism in ZnO nanowires with magnetic coupling energy up to 21 meV in the neutral state, which increases with additional electron and O vacancy, revealing the role of carriers in magnetic exchange. The potential for achieving room temperature ferromagnetism and high T{sub C} in ZnO:Gd nanowires is evident from the large ferromagnetic coupling energy (200 meV) obtained with the O vacancy. Density of states shows that Fermi level overlaps with Gd f states with the introduction of O vacancy, indicating the possibility of s-f coupling. These results will assist in understanding experimental findings in Gd-doped ZnO nanowires.

Fabrication of a Miniaturized ZnO Nanowire Accelerometer and Its Performance Tests

Directory of Open Access Journals (Sweden)

Hyun Chan Kim

2016-09-01

Full Text Available This paper reports a miniaturized piezoelectric accelerometer suitable for a small haptic actuator array. The accelerometer is made with zinc oxide (ZnO nanowire (NW grown on a copper wafer by a hydrothermal process. The size of the accelerometer is 1.5 × 1.5 mm2, thus fitting the 1.8 × 1.8 mm2 haptic actuator array cell. The detailed fabrication process of the miniaturized accelerometer is illustrated. Performance evaluation of the fabricated accelerometer is conducted by comparing it with a commercial piezoelectric accelerometer. The output current of the fabricated accelerometer increases linearly with the acceleration. The miniaturized ZnO NW accelerometer is feasible for acceleration measurement of small and lightweight devices.

ZnO quantum dots–decorated ZnO nanowires for the enhancement of antibacterial and photocatalytic performances

International Nuclear Information System (INIS)

Wu, Jyh Ming; Tsay, Li-Yi

2015-01-01

We demonstrate highly antibacterial activities for killing off Staphylococcus aureus and Escherichia coli using ZnO nanowires decorated with ZnO quantum dots (so-called ZnO QDs/NWs) under visible-light irradiation and dark conditions. The average size of the ZnO QDs is in the range of 3–5 nm; these were uniformly dispersed on the ZnO nanowires’ surface to form the ZnO QDs/NWs. A significant blue-shift effect was observed using photoluminescence (PL) spectra. The size of the ZnO QDs is strongly dependent on the material’s synthesis time. The ZnO QDs/NWs exhibited an excellent photocatalytic activity under visible-light irradiation. The ZnO QDs’ active sites (i.e. the O–H bond and Zn"2"+) accelerate the photogenerated-carrier migration from the QDs to the NWs. As a consequence, the electrons reacted with the dissolved oxygen to form oxygen ions and produced hydroperoxyl radicals to enhance photocatalytic activity. The antibacterial activities (as indicated by R-factor-inhibiting activity) of the ZnO QDs/NWs for killing off Staphylococcus aureus and Escherichia coli is around 4.9 and 5.5 under visible-light irradiation and dark conditions, respectively. The hydroxyl radicals served as an efficient oxidized agent for decomposing the organic dye and microorganism species. The antibacterial activities of the ZnO QDs/NWs in the dark may be attributed to the Zn"2"+ ions that were released from the ZnO QDs and infused into the microbial solution against the growth of bacteria thus disrupting the microorganism. The highly antibacterial and photocatalytic activity of the ZnO QDs/NWs can be well implanted on a screen window, thus offering a promising solution to inhibit the spread of germs under visible-light and dark conditions. (paper)

Unusual electrochemical response of ZnO nanowires-decorated multiwalled carbon nanotubes

International Nuclear Information System (INIS)

Mo Guangquan; Ye Jianshan; Zhang Weide

2009-01-01

A novel type of ZnO nanowires-modified multiwalled carbon nanotubes (MWCNTs) nanocomposite (ZnO-NWs/MWCNTs) has been prepared by a hydrothermal process. The ZnO-NWs/MWCNTs nanocomposite has a uniform surface distribution and large coverage of ZnO nanowires onto MWCNTs with 3D configuration, which was characterized by scanning electron microscopy. Cyclic voltammetry and electrochemical impedance spectroscopy methods were applied to investigate the electrochemical properties of ZnO-NWs/MWCNTs nanocomposite. Surprisingly, unlike the conventional n-type semiconducting ZnO nanowires grown on Ta substrate, the ZnO-NWs/MWCNTs nanocomposite exhibits excellent electron transfer capability and gives a pair of well-defined symmetric redox peaks towards ferricyanide probe. What's more, the ZnO-NWs/MWCNTs nanocomposite shows remarkable electrocatalytic activity (current response increased 4 folds at 0.3 V) towards H 2 O 2 by comparing with bare MWCNTs. The ZnO-NWs/MWCNTs nanocomposite could find applications in novel biosensors and other electronic devices.

Power generation from base excitation of a Kevlar composite beam with ZnO nanowires

Science.gov (United States)

Malakooti, Mohammad H.; Hwang, Hyun-Sik; Sodano, Henry A.

2015-04-01

One-dimensional nanostructures such as nanowires, nanorods, and nanotubes with piezoelectric properties have gained interest in the fabrication of small scale power harvesting systems. However, the practical applications of the nanoscale materials in structures with true mechanical strengths have not yet been demonstrated. In this paper, piezoelectric ZnO nanowires are integrated into the fiber reinforced polymer composites serving as an active phase to convert the induced strain energy from ambient vibration into electrical energy. Arrays of ZnO nanowires are grown vertically aligned on aramid fibers through a low-cost hydrothermal process. The modified fabrics with ZnO nanowires whiskers are then placed between two carbon fabrics as the top and the bottom electrodes. Finally, vacuum resin transfer molding technique is utilized to fabricate these multiscale composites. The fabricated composites are subjected to a base excitation using a shaker to generate charge due to the direct piezoelectric effect of ZnO nanowires. Measuring the generated potential difference between the two electrodes showed the energy harvesting application of these multiscale composites in addition to their superior mechanical properties. These results propose a new generation of power harvesting systems with enhanced mechanical properties.

Novel epoxy-silicone thermolytic transparent packaging adhesives chemical modified by ZnO nanowires for HB LEDs

International Nuclear Information System (INIS)

He Ying; Wang Junan; Pei Changlong; Song Jizhong; Zhu Di; Chen Jie

2010-01-01

A novel high transparent thermolytic epoxy-silicone for high-brightness light-emitting diode (HB-LED) is introduced, which was synthesized by polymerization using silicone matrix via diglycidyl ether bisphenol-A epoxy resin (DGEBA) as reinforcing agent, and filling ZnO nanowires to modify thermal conductivity and control refractive index of the hybrid material. The interactions of ZnO nanowires with polymers are mediated by the ligands attached to the nanoparticles. Thus, the ligands markedly influence the properties of ZnO nanowires/epoxy-silicone composites. The refractive indices of the prepared hybrid adhesives can be tuned by the ZnO nanowires from 1.4711 to 1.5605. Light transmittance can be increased by 20% from 80 to 95%. The thermal conductivity of the transparent packaging adhesives is 0.89-0.90 W/mK.

Mechanisms involved in the hydrothermal growth of ultra-thin and high aspect ratio ZnO nanowires

Energy Technology Data Exchange (ETDEWEB)

Demes, Thomas [Univ. Grenoble Alpes, CNRS, Grenoble-INP, LMGP, F-38000 Grenoble (France); Ternon, Céline, E-mail: celine.ternon@grenoble-inp.fr [Univ. Grenoble Alpes, CNRS, Grenoble-INP, LMGP, F-38000 Grenoble (France); Univ. Grenoble Alpes, CNRS, LTM, F-38000 Grenoble (France); Morisot, Fanny [Univ. Grenoble Alpes, CNRS, Grenoble-INP, LMGP, F-38000 Grenoble (France); Univ. Grenoble Alpes, CNRS, Grenoble-INP" 2, IMEP-LaHC, F-38000 Grenoble (France); Riassetto, David [Univ. Grenoble Alpes, CNRS, Grenoble-INP, LMGP, F-38000 Grenoble (France); Legallais, Maxime [Univ. Grenoble Alpes, CNRS, Grenoble-INP, LMGP, F-38000 Grenoble (France); Univ. Grenoble Alpes, CNRS, Grenoble-INP" 2, IMEP-LaHC, F-38000 Grenoble (France); Roussel, Hervé; Langlet, Michel [Univ. Grenoble Alpes, CNRS, Grenoble-INP, LMGP, F-38000 Grenoble (France)

2017-07-15

Highlights: • ZnO nanowires are grown on sol-gel ZnO seed layers by hydrothermal synthesis. • Ultra-thin and high aspect ratio nanowires are obtained without using additives. • Nanowire diameter is 20–25 nm regardless of growth time and seed morphology. • A nanowire growth model is developed on the basis of thermodynamic considerations. • The nanowires are intended for integration into electrically conductive nanonets. - Abstract: Hydrothermal synthesis of ZnO nanowires (NWs) with tailored dimensions, notably high aspect ratios (AR) and small diameters, is a major concern for a wide range of applications and still represents a challenging and recurring issue. In this work, an additive-free and reproducible hydrothermal procedure has been developed to grow ultra-thin and high AR ZnO NWs on sol-gel deposited ZnO seed layers. Controlling the substrate temperature and using a low reagent concentration (1 mM) has been found to be essential for obtaining such NWs. We show that the NW diameter remains constant at about 20–25 nm with growth time contrary to the NW length that can be selectively increased leading to NWs with ARs up to 400. On the basis of investigated experimental conditions along with thermodynamic and kinetic considerations, a ZnO NW growth mechanism has been developed which involves the formation and growth of nuclei followed by NW growth when the nuclei reach a critical size of about 20–25 nm. The low reagent concentration inhibits NW lateral growth leading to ultra-thin and high AR NWs. These NWs have been assembled into electrically conductive ZnO nanowire networks, which opens attractive perspectives toward the development of highly sensitive low-cost gas- or bio-sensors.

Photoelectric properties and charge dynamics in ZnO nanowires/Cu{sub 4}Bi{sub 4}S{sub 9} and ZnO nanowires/In{sub 2}O{sub 3}/Cu{sub 4}Bi{sub 4}S{sub 9} heterostructures

Energy Technology Data Exchange (ETDEWEB)

Liu, Xiangyang, E-mail: lxy081276@126.com, E-mail: yzgu@henu.edu.cn; Wang, Shun; Gu, Yuzong, E-mail: lxy081276@126.com, E-mail: yzgu@henu.edu.cn [Institue of Microsystems Physics and School of Physics and Electronics, Henan University, Kaifeng 475004 (China); Zhang, Jingwei; Zhang, Jiwei [The Key Laboratory for Special Functional Materials of MOE, Henan University, Kaifeng 475004 (China)

2014-12-28

ZnO nanowires arrays were preformed in a horizontal double-tube system. Two types of heterostructures (ZnO nanowires/Cu{sub 4}Bi{sub 4}S{sub 9} and ZnO nanowires/In{sub 2}O{sub 3}/Cu{sub 4}Bi{sub 4}S{sub 9}) and three-dimensional solar cells were fabricated with ZnO nanowires arrays as working electrode, In{sub 2}O{sub 3} as buffer layer, and Cu{sub 4}Bi{sub 4}S{sub 9} as inorganic dye and hole collector. It is suggested that two types of heterostructures have the similar absorption properties with single Cu{sub 4}Bi{sub 4}S{sub 9}. However, the results of steady state and electric field-induced surface photovoltage indicate that ZnO nanowires/In{sub 2}O{sub 3}/Cu{sub 4}Bi{sub 4}S{sub 9} exhibits the higher photovoltaic response than ZnO nanowires/Cu{sub 4}Bi{sub 4}S{sub 9}. Using the transient surface photovoltage spectroscopy, we further studied the separation and transport mechanism of photogenerated charges. Furthermore, Cu{sub 4}Bi{sub 4}S{sub 9}/In{sub 2}O{sub 3}/ZnO cells presents the better performance than Cu{sub 4}Bi{sub 4}S{sub 9}/ZnO cells and the highest efficiencies are about 6.4% and 5.2%, respectively. It is suggested that direct paths, interface barrier, built-in electric field, and double energy level matchings between conduction bands (Cu{sub 4}Bi{sub 4}S{sub 9} and In{sub 2}O{sub 3}, In{sub 2}O{sub 3} and ZnO) have obvious effect on the separation of photogenerated charges. Then we discussed the synthetic action on the charge dynamics from these factors.

Fabrication and characterization of well-aligned zinc oxide nanowire arrays and their realizations in Schottky-device applications

Energy Technology Data Exchange (ETDEWEB)

Wong, Kin Mun; Grote, Fabian; Sun, Hui; Lei, Yong [Institute of Materials Physics, Center for Nanotechnology, University of Muenster (Germany); Wen, Liaoyong; Fang, Yaoguo [Institute of Nanochemistry and Nanobiology, Shanghai University, Shanghai 201800 (China)

2011-07-01

Highly ordered arrays of vertical zinc oxide (ZnO) nanowires (NWs) or nanopores were fabricated in our group by first thermal evaporating a thin film of gold on the ultrathin alumina membrane (UTAM). The UTAM was then utilized as a substrate for the growth of the ordered arrays using a chemical vapour deposition (CVD) process. Alternatively, a modified CVD process was also used to fabricate ultra-long ZnO NWs with the length of the nanowire exceeding 100 micrometres. Subsequently, densely packed arrays of ZnO NWs Schottky diodes were synthesized by transferring the long NWs on a substrate using a dry contact printing method and the electrical contacts were made on the NWs with a photolithographic process. The interesting electrical properties of the ZnO NWs, diodes or other metal oxide NWs such as the field emission, electron transport and piezoelectric properties were characterized by current-voltage or by other appropriate measurements.

Effect of cobalt doping on the mechanical properties of ZnO nanowires

Energy Technology Data Exchange (ETDEWEB)

Vahtrus, Mikk; Šutka, Andris [Institute of Physics, University of Tartu, W. Ostwaldi 1, 50412 Tartu (Estonia); Polyakov, Boris [Institute of Solid State Physics, University of Latvia, Kengaraga 8, LV-1063 Riga (Latvia); Oras, Sven; Antsov, Mikk [Institute of Physics, University of Tartu, W. Ostwaldi 1, 50412 Tartu (Estonia); Doebelin, Nicola [RMS Foundation, Bischmattstrasse 12, Bettlach 2544 (Switzerland); Institute of Geological Sciences, University of Bern, Baltzerstrasse 1–3, Bern 3012 (Switzerland); Lõhmus, Rünno; Nõmmiste, Ergo [Institute of Physics, University of Tartu, W. Ostwaldi 1, 50412 Tartu (Estonia); Vlassov, Sergei, E-mail: vlassovs@ut.ee [Institute of Physics, University of Tartu, W. Ostwaldi 1, 50412 Tartu (Estonia)

2016-11-15

In this work, we investigate the influence of doping on the mechanical properties of ZnO nanowires (NWs) by comparing the mechanical properties of pure and Co-doped ZnO NWs grown in similar conditions and having the same crystallographic orientation [0001]. The mechanical characterization included three-point bending tests made with atomic force microscopy and cantilever beam bending tests performed inside scanning electron microscopy. It was found that the Young's modulus of ZnO NWs containing 5% of Co was approximately a third lower than that of the pure ZnO NWs. Bending strength values were comparable for both materials and in both cases were close to theoretical strength indicating high quality of NWs. Dependence of mechanical properties on NW diameter was found for both doped and undoped ZnO NWs. - Highlights: •Effect of Co doping on the mechanical properties of ZnO nanowires is studied. •Co substitutes Zn atoms in ZnO crystal lattice. •Co addition affects crystal lattice parameters. •Co addition results in significantly decreased Young's modulus of ZnO. •Bending strength for doped and undoped wires is close to the theoretical strength.

Photo-assisted hysteresis of electronic transport for ZnO nanowire transistors

Science.gov (United States)

Du, Qianqian; Ye, Jiandong; Xu, Zhonghua; Zhu, Shunming; Tang, Kun; Gu, Shulin; Zheng, Youdou

2018-03-01

Recently, ZnO nanowire field effect transistors (FETs) have received renewed interest due to their extraordinary low dimensionality and high sensitivity to external chemical environments and illumination conditions. These prominent properties have promising potential in nanoscale chemical and photo-sensors. In this article, we have fabricated ZnO nanowire FETs and have found hysteresis behavior in their transfer characteristics. The mechanism and dynamics of the hysteresis phenomena have been investigated in detail by varying the sweeping rate and range of the gate bias with and without light irradiation. Significantly, light irradiation is of great importance on charge trapping by regulating adsorption and desorption of oxygen at the interface of ZnO/SiO2. Carriers excited by light irradiation can dramatically promote trapping/detrapping processes. With the assistance of light illumination, we have demonstrated a photon-assisted nonvolatile memory which employs the ZnO nanowire FET. The device exhibits reliable programming/erasing operations and a large on/off ratio. The proposed proto-type memory has thus provided a possible novel path for creating a memory functionality to other low-dimensional material systems.

Low-Temperature Rapid Fabrication of ZnO Nanowire UV Sensor Array by Laser-Induced Local Hydrothermal Growth

Directory of Open Access Journals (Sweden)

Sukjoon Hong

2013-01-01

Full Text Available We demonstrate ZnO nanowire based UV sensor by laser-induced hydrothermal growth of ZnO nanowire. By inducing a localized temperature rise using focused laser, ZnO nanowire array at ~15 μm size consists of individual nanowires with ~8 μm length and 200~400 nm diameter is readily synthesized on gold electrode within 30 min at the desired position. The laser-induced growth process is consecutively applied on two different points to bridge the micron gap between the electrodes. The resultant photoconductive ZnO NW interconnections display 2~3 orders increase in the current upon the UV exposure at a fixed voltage bias. It is also confirmed that the amount of photocurrent can be easily adjusted by changing the number of ZnO NW array junctions. The device exhibits clear response to the repeated UV illumination, suggesting that this process can be usefully applied for the facile fabrication of low-cost UV sensor array.

Effect of indium on photovoltaic property of n-ZnO/p-Si heterojunction device prepared using solution-synthesized ZnO nanowire film

Science.gov (United States)

Kathalingam, Adaikalam; Kim, Hyun-Seok; Park, Hyung-Moo; Valanarasu, Santiyagu; Mahalingam, Thaiyan

2015-01-01

Preparation of n-ZnO/p-Si heterostructures using solution-synthesized ZnO nanowire films and their photovoltaic characterization is reported. The solution-grown ZnO nanowire film is characterized using scanning electron microscope, electron dispersive x-ray, and optical absorption studies. Electrical and photovoltaic properties of the fabricated heterostructures are studied using e-beam-evaporated aluminum as metal contacts. In order to use transparent contact and to simultaneously collect the photogenerated carriers, sandwich-type solar cells were fabricated using ZnO nanorod films grown on p-silicon and indium tin oxide (ITO) coated glass as ITO/n-ZnO NR/p-Si. The electrical properties of these structures are analyzed from current-voltage (I-V) characteristics. ZnO nanowire film thickness-dependent photovoltaic properties are also studied. Indium metal was also deposited over the ZnO nanowires and its effects on the photovoltaic response of the devices were studied. The results demonstrated that all the samples exhibit a strong rectifying behavior indicating the diode nature of the devices. The sandwich-type ITO/n-ZnO NR/p-Si solar cells exhibit improved photovoltaic performance over the Al-metal-coated n-ZnO/p-Si structures. The indium deposition is found to show enhancement in photovoltaic behavior with a maximum open-circuit voltage (Voc) of 0.3 V and short-circuit current (Isc) of 70×10-6 A under ultraviolet light excitation.

Diameter optimization of VLS-synthesized ZnO nanowires, using statistical design of experiment

International Nuclear Information System (INIS)

Shafiei, Sepideh; Nourbakhsh, Amirhasan; Ganjipour, Bahram; Zahedifar, Mostafa; Vakili-Nezhaad, Gholamreza

2007-01-01

The possibility of diameter optimization of ZnO nanowires by using statistical design of experiment (DoE) is investigated. In this study, nanowires were synthesized using a vapor-liquid-solid (VLS) growth method in a horizontal reactor. The effects of six synthesis parameters (synthesis time, synthesis temperature, thickness of gold layer, distance between ZnO holder and substrate, mass of ZnO and Ar flow rate) on the average diameter of a ZnO nanowire were examined using the fractional factorial design (FFD) coupled with response surface methodology (RSM). Using a 2 III 6-3 FFD, the main effects of the thickness of the gold layer, synthesis temperature and synthesis time were concluded to be the key factors influencing the diameter. Then Box-Behnken design (BBD) was exploited to create a response surface from the main factors. The total number of required runs for the DoE process is 25, 8 runs for FFD parameter screening and 17 runs for the response surface obtained by BBD. Three extra runs are done to confirm the predicted results

Analysis of surface states in ZnO nanowire field effect transistors

International Nuclear Information System (INIS)

Shao, Ye; Yoon, Jongwon; Kim, Hyeongnam; Lee, Takhee; Lu, Wu

2014-01-01

Highlights: • The electron transport in ZnO nanowire FETs is space charged limited below a trap temperature. • Metallic contacts to ZnO nanowires exhibit non-linear behavior with a Schottky barrier height of ∼0.35 eV. • The surface state density is in the range of 1.04 × 10 10 –1.24 × 10 10 /cm 2 . • The trap activation energy is ∼0.26 eV. - Abstract: Nanowires (NWs) have attracted considerable interests for scaled electronic and optoelectronic device applications. However, NW based semiconductor devices normally suffer from surface states due to the existence of dangling bonds or surface reconstruction. Because of their large surface-to-volume ratio, surface states in NWs can easily affect the metallic contacts to NWs and electron transport in NW. Here, we present ZnO NW surface analysis by performing current–voltage characterization on ZnO NW Schottky barrier field effect transistors with different metal contacts (Ti, Al, Au) at both room temperature and cryogenic temperature. Our results show that three metal contacts are all Schottky contacts to ZnO NWs due to surface states. Our further study reveals: (a) the surface states related Schottky barrier height (SBH) can be extracted from a back to back Schottky diodes model and the SBH values are in the range of 0.34–0.37 eV for three metal contacts; (b) the trap activation energy determined from the Arrhenius plots of different Schottky metal contacts is in the range of 0.23–0.29 eV, which is oxygen vacancies related; and (c) based on the space-charge-limited model, the surface state density of ZnO NW is in the range of 1.04 × 10 10 –1.24 × 10 10 /cm 2

Synthesis of ZnO Nanowires via Hotwire Thermal Evaporation of Brass (CuZn) Assisted by Vapor Phase Transport of Methanol

OpenAIRE

Tamil Many K. Thandavan; Siti Meriam Abdul Gani; Chiow San Wong; Roslan Md Nor

2014-01-01

Zinc oxide (ZnO) nanowires (NWs) were synthesized using vapor phase transport (VPT) and thermal evaporation of Zn from CuZn. Time dependence of ZnO NWs growth was investigated for 5, 10, 15, 20, 25, and 30 minutes. Significant changes were observed from the field electron scanning electron microscopy (FESEM) images as well as from the X-ray diffraction (XRD) profile. The photoluminescence (PL) profile was attributed to the contribution of oxygen vacancy, zinc interstitials, and hydrogen defec...

Spatial mapping of exciton lifetimes in single ZnO nanowires

Directory of Open Access Journals (Sweden)

J. S. Reparaz

2013-07-01

Full Text Available We investigate the spatial dependence of the exciton lifetimes in single ZnO nanowires. We have found that the free exciton and bound exciton lifetimes exhibit a maximum at the center of nanowires, while they decrease by 30% towards the tips. This dependence is explained by considering the cavity-like properties of the nanowires in combination with the Purcell effect. We show that the lifetime of the bound-excitons scales with the localization energy to the power of 3/2, which validates the model of Rashba and Gurgenishvili at the nanoscale.

Determination of the specific resistance of individual freestanding ZnO nanowires with the low energy electron point source microscope

Energy Technology Data Exchange (ETDEWEB)

Weber, Dirk Henning; Beyer, Andre; Voelkel, Berthold; Goelzhaeuser, Armin [Physik Supramolekularer Systeme, Universitaet Bielefeld (Germany); Schlenker, Eva; Bakin, Andrey; Waag, Andreas [Institut fuer Halbleitertechnik, Technische Universitaet Braunschweig (Germany)

2008-07-01

A low energy electron point source (LEEPS) microscope is used to determine the electrical conductivity of individual freestanding ZnO nanowires in UHV. The nanowires were contacted with a manipulation tip and I-V curves were taken at different wire lengths. From those, the specific resistance was calculated and separated from the contact resistance. By comparing the specific resistances of ZnO nanowires with diameters between 1100 and 48 nm, a large surface contribution for the thin nanowires was found. A geometric model for separation between surface and bulk contributions is given. The results of electrical transport measurements on vapor phase grown ZnO nanowires are discussed, as well as the size dependence of the wire resistance.

Surface saturation effect on mechanical and optical properties of ZnO nanowires

Directory of Open Access Journals (Sweden)

S Yazdani

2012-09-01

Full Text Available  In this work, on the basis of density functional theory and the generalized gradient approximation (GGA we optimized the electronic structure of the unsaturated and hydrogen saturated ZnO nanowires with [0001] orientation. Studying the effects of a uniaxial strain on the nanowires, we calculated the Young’s modulus and the effective piezoelectric coefficient of the nanowires. Furthermore, the effect of this uniaxial strain on the imaginary part of dielectric function of the nanowires was investigated.

High-performance UV detector made of ultra-long ZnO bridging nanowires

International Nuclear Information System (INIS)

Li Yanbo; Della Valle, Florent; Simonnet, Mathieu; Yamada, Ichiro; Delaunay, Jean-Jacques

2009-01-01

A nanowatt UV photoconductive detector made up of ultra-long (∼100 μm) ZnO bridging nanowires has been fabricated by a single-step chemical vapor deposition (CVD) process. The electrodes, forming comb-shaped thick ZnO layers, and the sensing elements, consisting of ZnO nanowires bridging the electrodes, were fabricated simultaneously in a single-step CVD process. The device showed drastic changes (10-10 5 times) in current under a wide range of UV irradiances (10 -8 -10 -2 W cm -2 ). Moreover, the detector exhibited fast response (rise and decay times of the order of 1 s) to UV illumination in air, but no response to visible light (hν<3.2 eV). Our approach provides a simple and cost-effective way to fabricate high-performance 'visible-blind' UV detectors.

Electrical properties of lightly Ga-doped ZnO nanowires

Science.gov (United States)

Alagha, S.; Heedt, S.; Vakulov, D.; Mohammadbeigi, F.; Senthil Kumar, E.; Schäpers, Th; Isheim, D.; Watkins, S. P.; Kavanagh, K. L.

2017-12-01

We investigated the growth, crystal structure, elemental composition and electrical transport characteristics of ZnO nanowires, a promising candidate for optoelectronic applications in the UV-range. Nominally-undoped and Ga-doped ZnO nanowires were grown by metal-organic chemical vapor deposition. Photoluminescence measurements confirmed the incorporation of Ga via donor-bound exciton emission. With atom-probe tomography we estimated an upper limit of the Ga impurity concentration ({10}18 {{cm}}-3). We studied the electrical transport characteristics of these nanowires with a W-nanoprobe technique inside a scanning electron microscope and with lithographically-defined contacts allowing back-gated measurements. An increase in apparent resistivity by two orders of magnitude with decreasing radius was measured with both techniques with a much larger distribution width for the nanoprobe method. A drop in the effective carrier concentration and mobility was found with decreasing radius which can be attributed to carrier depletion and enhanced scattering due to surface states. Little evidence of a change in resistivity was observed with Ga doping, which indicates that the concentration of native or background dopants is higher than the Ga doping concentration.

ZnO nanowires: Synthesis and charge transfer mechanism in the detection of ammonia vapour

Science.gov (United States)

Nancy Anna Anasthasiya, A.; Ramya, S.; Rai, P. K.; Jeyaprakash, B. G.

2018-01-01

ZnO nanowires with hexagonal wurtzite structure were grown on the glass substrate using Successive Ionic Layer Adsorption and Reaction (SILAR) method. Both experimental and theoretical studies demonstrated that NH3 chemisorbed and transferred the charge to the surface of the nanowire via its nitrogen site to the zinc site of ZnO nanowires, leading to the detection of NH3 vapour. The adsorbed ammonia dissociated into NH2 and H due to steric repulsion, and then into N2 and H2 gas. The formation of the N2 gas during the desorption process confirmed by observing peak at 14 and 28 m/z in the GC-MS spectrum.

Electrodeposition of CdSe coatings on ZnO nanowire arrays for extremely thin absorber solar cells

Energy Technology Data Exchange (ETDEWEB)

Majidi, Hasti [Department of Chemical and Biological Engineering, Drexel University, 3141 Chestnut St, Philadelphia, PA 19104 (United States); Baxter, Jason B., E-mail: jbaxter@drexel.ed [Department of Chemical and Biological Engineering, Drexel University, 3141 Chestnut St, Philadelphia, PA 19104 (United States)

2011-02-15

We report on electrodeposition of CdSe coatings onto ZnO nanowire arrays and determine the effect of processing conditions on material properties such as morphology and microstructure. CdSe-coated ZnO nanowire arrays have potential use in extremely thin absorber (ETA) solar cells, where CdSe absorbs visible light and injects photoexcited electrons into the ZnO nanowires. We show that room-temperature electrodeposition enables growth of CdSe coatings that are highly crystalline, uniform, and conformal with precise control over thickness and microstructure. X-ray diffraction and transmission electron microscopy show nanocrystalline CdSe in both hexagonal and cubic phases with grain size {approx}5 nm. Coating morphology depends on electrodeposition current density. Uniform and conformal coatings were achieved using moderate current densities of {approx}2 mA cm{sup -2} for nanowires with roughness factor of {approx}10, while lower current densities resulted in sparse nucleation and growth of larger, isolated islands. Electrodeposition charge density controls the thickness of the CdSe coating, which was exploited to investigate the evolution of the morphology at early stages of nucleation and growth. UV-vis transmission spectroscopy and photoelectrochemical solar cell measurements demonstrate that CdSe effectively sensitizes ZnO nanowires to visible light.

Electrodeposition of CdSe coatings on ZnO nanowire arrays for extremely thin absorber solar cells

International Nuclear Information System (INIS)

Majidi, Hasti; Baxter, Jason B.

2011-01-01

We report on electrodeposition of CdSe coatings onto ZnO nanowire arrays and determine the effect of processing conditions on material properties such as morphology and microstructure. CdSe-coated ZnO nanowire arrays have potential use in extremely thin absorber (ETA) solar cells, where CdSe absorbs visible light and injects photoexcited electrons into the ZnO nanowires. We show that room-temperature electrodeposition enables growth of CdSe coatings that are highly crystalline, uniform, and conformal with precise control over thickness and microstructure. X-ray diffraction and transmission electron microscopy show nanocrystalline CdSe in both hexagonal and cubic phases with grain size ∼5 nm. Coating morphology depends on electrodeposition current density. Uniform and conformal coatings were achieved using moderate current densities of ∼2 mA cm -2 for nanowires with roughness factor of ∼10, while lower current densities resulted in sparse nucleation and growth of larger, isolated islands. Electrodeposition charge density controls the thickness of the CdSe coating, which was exploited to investigate the evolution of the morphology at early stages of nucleation and growth. UV-vis transmission spectroscopy and photoelectrochemical solar cell measurements demonstrate that CdSe effectively sensitizes ZnO nanowires to visible light.

Blue electroluminescence nanodevice prototype based on vertical ZnO nanowire/polymer film on silicon substrate

International Nuclear Information System (INIS)

He Ying; Wang Junan; Chen Xiaoban; Zhang Wenfei; Zeng Xuyu; Gu Qiuwen

2010-01-01

We present a polymer-complexing soft template technique to construct the ZnO-nanowire/polymer light emitting device prototype that exhibits blue electrically driven emission with a relatively low-threshold voltage at room temperature in ambient atmosphere, and the ZnO-nanowire-based LED's emission wavelength is easily tuned by controlling the applied-excitation voltage. The nearly vertically aligned ZnO-nanowires with polymer film were used as emissive layers in the devices. The method uses polymer as binder in the LED device and dispersion medium in the luminescence layer, which stabilizes the quasi-arrays of ZnO nanowires embedding in a thin polymer film on silicon substrate and passivates the surface of ZnO nanocrystals, to prevent the quenching of luminescence. Additionally, the measurements of electrical properties showed that ZnO-nanowire/polymer film could significantly improve the conductivity of the film, which could be attributed to an increase in both Hall mobility and carrier concentration. The results indicated that the novel technique is a low-cost process for ZnO-based UV or blue light emission and reduces the requirement for achieving robust p-doping of ZnO film. It suggests that such ZnO-nanowire/polymer-based LEDs will be suitable for the electro-optical application.

Piezoelectric Nanogenerator Using p-Type ZnO Nanowire Arrays

KAUST Repository

Lu, Ming-Pei

2009-03-11

Using phosphorus-doped ZnO nanowire (NW) arrays grown on silicon substrate, energy conversion using the p-type ZnO NWs has been demonstrated for the first time. The p-type ZnO NWs produce positive output voltage pulses when scanned by a conductive atomic force microscope (AFM) in contact mode. The output voltage pulse is generated when the tip contacts the stretched side (positive piezoelectric potential side) of the NW. In contrast, the n-type ZnO NW produces negative output voltage when scanned by the AFM tip, and the output voltage pulse is generated when the tip contacts the compressed side (negative potential side) of the NW. In reference to theoretical simulation, these experimentally observed phenomena have been systematically explained based on the mechanism proposed for a nanogenerator. © 2009 American Chemical Society.

Simulation the spatial resolution of an X-ray imager based on zinc oxide nanowires in anodic aluminium oxide membrane by using MCNP and OPTICS Codes

Science.gov (United States)

Samarin, S. N.; Saramad, S.

2018-05-01

The spatial resolution of a detector is a very important parameter for x-ray imaging. A bulk scintillation detector because of spreading of light inside the scintillator does't have a good spatial resolution. The nanowire scintillators because of their wave guiding behavior can prevent the spreading of light and can improve the spatial resolution of traditional scintillation detectors. The zinc oxide (ZnO) scintillator nanowire, with its simple construction by electrochemical deposition in regular hexagonal structure of Aluminum oxide membrane has many advantages. The three dimensional absorption of X-ray energy in ZnO scintillator is simulated by a Monte Carlo transport code (MCNP). The transport, attenuation and scattering of the generated photons are simulated by a general-purpose scintillator light response simulation code (OPTICS). The results are compared with a previous publication which used a simulation code of the passage of particles through matter (Geant4). The results verify that this scintillator nanowire structure has a spatial resolution less than one micrometer.

Lasing in ZnO and CdS nanowires

Energy Technology Data Exchange (ETDEWEB)

Thielmann, Andreas; Geburt, Sebastian; Kozlik, Michael; Kuehnel, Julian; Borschel, Christian; Ronning, Carsten [Institut fuer Festkoerperphysik, Friedrich-Schiller-Universitaet Jena, Max-Wien-Platz 1, 07743 Jena (Germany)

2011-07-01

The development of nanoscaled semiconductor lasers could be the key resolution to the still persistent size mismatch between integrated microelectronic devices and semiconductor optoelectronic devices. Semiconductor nanowires offer an elegant path to the development of nanoscaled lasers as their geometry with two planar end facets naturally combines a fiber-like waveguide with an optical resonator. The possible stimulation of the material's emission processes enables lasing of resonant optical modes. ZnO and CdS nanowires of different aspect ratios have been synthesized via the VLS mechanism and were characterized by SEM, EDX and ensemble PL measurements. Power dependent PL measurements on single nanowires excited with pulsed laser light at 355 nm have been performed between 10 K and room temperature and were set in correlation to the nanowires' respective morphology. Sharp emission lines which show characteristics of Fabry-Perot modes could be observed above a power threshold. The measured power dependencies reveal amplified stimulated emission and lasing at high excitation densities.

The phonon-assisted tunneling mechanism of conduction in ZnO nanowires and films

International Nuclear Information System (INIS)

Pipinys, Povilas; Ohlckers, Per

2010-01-01

The phonon-assisted tunneling (PhAT) model is applied for an explanation of the conductivity dependence on temperature and temperature-dependent I-V characteristics measured by other investigators for zinc oxide (ZnO) nanowires and films. Our proposed model describes well not only conductivity dependence on temperature measured in a wide temperature range, but also temperature-dependent I-V data using the same set of parameters characterizing the material under investigation. The values of active phonons energy are estimated from a fit of the conductivity dependence to temperature data with the PhAT theory.

Simulation, optimization and testing of a novel high spatial resolution X-ray imager based on Zinc Oxide nanowires in Anodic Aluminium Oxide membrane using Geant4

Science.gov (United States)

Esfandi, F.; Saramad, S.

2015-07-01

In this work, a new generation of scintillator based X-ray imagers based on ZnO nanowires in Anodized Aluminum Oxide (AAO) nanoporous template is characterized. The optical response of ordered ZnO nanowire arrays in porous AAO template under low energy X-ray illumination is simulated by the Geant4 Monte Carlo code and compared with experimental results. The results show that for 10 keV X-ray photons, by considering the light guiding properties of zinc oxide inside the AAO template and suitable selection of detector thickness and pore diameter, the spatial resolution less than one micrometer and the detector detection efficiency of 66% are accessible. This novel nano scintillator detector can have many advantages for medical applications in the future.

Simulation, optimization and testing of a novel high spatial resolution X-ray imager based on Zinc Oxide nanowires in Anodic Aluminium Oxide membrane using Geant4

International Nuclear Information System (INIS)

Esfandi, F.; Saramad, S.

2015-01-01

In this work, a new generation of scintillator based X-ray imagers based on ZnO nanowires in Anodized Aluminum Oxide (AAO) nanoporous template is characterized. The optical response of ordered ZnO nanowire arrays in porous AAO template under low energy X-ray illumination is simulated by the Geant4 Monte Carlo code and compared with experimental results. The results show that for 10 keV X-ray photons, by considering the light guiding properties of zinc oxide inside the AAO template and suitable selection of detector thickness and pore diameter, the spatial resolution less than one micrometer and the detector detection efficiency of 66% are accessible. This novel nano scintillator detector can have many advantages for medical applications in the future

Silver nanowires network encapsulated by low temperature sol-gel ZnO for transparent flexible electrodes with ambient stability

Science.gov (United States)

Shin, Wonjung; Cho, Wonki; Baik, Seung Jae

2018-01-01

As a geometrically engineered realization of transparent electrode, Ag nanowires network is promising for its superior characteristics both on electrical conductivity and optical transmittance. However, for a potential commercialization of Ag nanowires network, further investigations on encapsulation materials are necessary to prevent degradation caused by ambient aging. In addition, the temperature range of the coating process for the encapsulation material needs to be low enough to prevent degradation of polymer substrates during the film coating processes, when considering emerging flexible device application of transparent electrodes. We present experimental results showing that low temperature sol-gel ZnO processed under 130 °C is an effective encapsulation material preventing ambient oxidation of Ag nanowires network without degrading electrical, optical, and mechanical properties.

Shape-dependent plasma-catalytic activity of ZnO nanomaterials coated on porous ceramic membrane for oxidation of butane.

Science.gov (United States)

Sanjeeva Gandhi, M; Mok, Young Sun

2014-12-01

In order to explore the effects of the shape of ZnO nanomaterials on the plasma-catalytic decomposition of butane and the distribution of byproducts, three types of ZnO nanomaterials (nanoparticles (NPs), nanorods (NRs) and nanowires (NWs)) were prepared and coated on multi-channel porous alumina ceramic membrane. The structures and morphologies of the nanomaterials were confirmed by X-ray diffraction method and scanning electron microscopy. The observed catalytic activity of ZnO in the oxidative decomposition of butane was strongly shape-dependent. It was found that the ZnO NWs exhibited higher catalytic activity than the other nanomaterials and could completely oxidize butane into carbon oxides (COx). When using the bare or ZnO NPs-coated ceramic membrane, several unwanted partial oxidation and decomposition products like acetaldehyde, acetylene, methane and propane were identified during the decomposition of butane. When the ZnO NWs- or ZnO NRs-coated membrane was used, however, the formation of such unwanted byproducts except methane was completely avoided, and full conversion into COx was achieved. Better carbon balance and COx selectivity were obtained with the ZnO NWs and NRs than with the NPs. Copyright © 2014 Elsevier Ltd. All rights reserved.

Facile preparation of branched hierarchical ZnO nanowire arrays with enhanced photocatalytic activity: A photodegradation kinetic model

Science.gov (United States)

Ebrahimi, M.; Yousefzadeh, S.; Samadi, M.; Dong, Chunyang; Zhang, Jinlong; Moshfegh, A. Z.

2018-03-01

Branched hierarchical zinc oxide nanowires (BH-ZnO NWs) were fabricated successfully by a facile and rapid synthesis using two-step growth process. Initially, ZnO NWs have been prepared by anodizing zinc foil at room temperature and followed by annealing treatment. Then, the BH- ZnO NWs were grown on the ZnO NWs by a solution based method at very low temperature (31 oC). The BH- ZnO NWs with different aspect ratio were obtained by varying reaction time (0.5, 2, 5, 10 h). Photocatalytic activity of the samples was studied under both UV and visible light. The results indicated that the optimized BH-ZnO NWs (5 h) as a photocatalyst exhibited the highest photoactivity with about 3 times higher than the ZnO NWs under UV light. In addition, it was also determined that photodegradation rate constant (k) for the BH- ZnO NWs surface obeys a linear function with the branch length (l) and their correlation was described by using a proposed kinetic model.

Investigation on the Tunable-Length Zinc Oxide Nanowire Arrays for Dye-Sensitized Solar Cells

Directory of Open Access Journals (Sweden)

Shou-Yi Kuo

2014-01-01

Full Text Available We had successfully fabricated ZnO-based nanowires by vapor transport method in the furnace tube. ZnO nanowire arrays grown in 600°C for 30 minutes, 60 minutes, 90 minutes, and 120 minutes had applied to the dye-sensitized solar cells. The dye loading is proportional to the total equivalent surface area of ZnO nanowire arrays in the cells and plays an important role in improving power conversion efficiency. The highest efficiency was observed in DSSC sample with ZnO nanowires grown for 90 minutes, which had the largest equivalent surface area and also the highest dye loading. According to our experimental results, the enhancement in power conversion efficiency is attributed to the higher light harvesting and reduction of carrier recombination. In addition, ZnO nanowires also contribute to the photocurrent in the UV region.

Failure mechanisms and electromechanical coupling in semiconducting nanowires

Directory of Open Access Journals (Sweden)

Peng B.

2010-06-01

Full Text Available One dimensional nanostructures, like nanowires and nanotubes, are increasingly being researched for the development of next generation devices like logic gates, transistors, and solar cells. In particular, semiconducting nanowires with a nonsymmetric wurtzitic crystal structure, such as zinc oxide (ZnO and gallium nitride (GaN, have drawn immense research interests due to their electromechanical coupling. The designing of the future nanowire-based devices requires component-level characterization of individual nanowires. In this paper, we present a unique experimental set-up to characterize the mechanical and electromechanical behaviour of individual nanowires. Using this set-up and complementary atomistic simulations, mechanical properties of ZnO nanowires and electromechanical properties of GaN nanowires were investigated. In ZnO nanowires, elastic modulus was found to depend on nanowire diameter decreasing from 190 GPa to 140 GPa as the wire diameter increased from 5 nm to 80 nm. Inconsistent failure mechanisms were observed in ZnO nanowires. Experiments revealed a brittle fracture, whereas simulations using a pairwise potential predicted a phase transformation prior to failure. This inconsistency is addressed in detail from an experimental as well as computational perspective. Lastly, in addition to mechanical properties, preliminary results on the electromechanical properties of gallium nitride nanowires are also reported. Initial investigations reveal that the piezoresistive and piezoelectric behaviour of nanowires is different from bulk gallium nitride.

Growth of Horizonatal ZnO Nanowire Arrays on Any Substrate

KAUST Repository

Qin, Yong

2008-12-04

A general method is presented for growing laterally aligned and patterned ZnO nanowire (NW) arrays on any substrate as long as it is flat. The orientation control is achieved using the combined effect from ZnO seed layer and the catalytically inactive Cr (or Sn) layer for NW growth. The growth temperature (< 100 °C) is so low that the method can be applied to a wide range of substrates that can be inorganic, organic, single crystal, polycrystal, or amorphous. The laterally aligned ZnO NW arrays can be employed for various applications, such as gas sensor, field effect transistor, nanogenerator, and flexible electronics. © 2008 American Chemical Society.

Dielectrophoretic alignment of metal and metal oxide nanowires and nanotubes: a universal set of parameters for bridging prepatterned microelectrodes.

Science.gov (United States)

Maijenburg, A W; Maas, M G; Rodijk, E J B; Ahmed, W; Kooij, E S; Carlen, E T; Blank, D H A; ten Elshof, J E

2011-03-15

Nanowires and nanotubes were synthesized from metals and metal oxides using templated cathodic electrodeposition. With templated electrodeposition, small structures are electrodeposited using a template that is the inverse of the final desired shape. Dielectrophoresis was used for the alignment of the as-formed nanowires and nanotubes between prepatterned electrodes. For reproducible nanowire alignment, a universal set of dielectrophoresis parameters to align any arbitrary nanowire material was determined. The parameters include peak-to-peak potential and frequency, thickness of the silicon oxide layer, grounding of the silicon substrate, and nature of the solvent medium used. It involves applying a field with a frequency >10(5) Hz, an insulating silicon oxide layer with a thickness of 2.5 μm or more, grounding of the underlying silicon substrate, and the use of a solvent medium with a low dielectric constant. In our experiments, we obtained good results by using a peak-to-peak potential of 2.1 V at a frequency of 1.2 × 10(5) Hz. Furthermore, an indirect alignment technique is proposed that prevents short circuiting of nanowires after contacting both electrodes. After alignment, a considerably lower resistivity was found for ZnO nanowires made by templated electrodeposition (2.2-3.4 × 10(-3) Ωm) compared to ZnO nanorods synthesized by electrodeposition (10 Ωm) or molecular beam epitaxy (MBE) (500 Ωm). Copyright © 2010 Elsevier Inc. All rights reserved.

Vertically aligned ZnO nanowire arrays in Rose Bengal-based dye-sensitized solar cells

Energy Technology Data Exchange (ETDEWEB)

Pradhan, Basudev; Batabyal, Sudip K.; Pal, Amlan J. [Indian Association for the Cultivation of Science, Department of Solid State Physics, Kolkata 700032 (India)

2007-05-23

We fabricate dye-sensitized solar cells (DSSC) using vertically oriented, high density, and crystalline array of ZnO nanowires, which can be a suitable alternative to titanium dioxide nanoparticle films. The vertical nanowires provide fast routes or channels for electron transport to the substrate electrode. As an alternative to conventional ruthenium complex, we introduce Rose Bengal dye, which acts as a photosensitizer in the dye-sensitized solar cells. The dye energetically matches the ZnO with usual KI-I{sub 2} redox couple for dye-sensitized solar cell applications. (author)

Synthesis of ZnO Nanowires via Hotwire Thermal Evaporation of Brass (CuZn Assisted by Vapor Phase Transport of Methanol

Directory of Open Access Journals (Sweden)

Tamil Many K. Thandavan

2014-01-01

Full Text Available Zinc oxide (ZnO nanowires (NWs were synthesized using vapor phase transport (VPT and thermal evaporation of Zn from CuZn. Time dependence of ZnO NWs growth was investigated for 5, 10, 15, 20, 25, and 30 minutes. Significant changes were observed from the field electron scanning electron microscopy (FESEM images as well as from the X-ray diffraction (XRD profile. The photoluminescence (PL profile was attributed to the contribution of oxygen vacancy, zinc interstitials, and hydrogen defects in the ZnO NWs. Raman scattering results show a significant peak at 143 cm−1 and possible functionalization on the wall of ZnO NWs. Growth of ZnO NWs in (0002 with an estimated distance between adjacent lattice planes 0.26 nm was determined from transmission electron microscopy (TEM analysis.

Efficient photocatalytic performance enhancement in Co-doped ZnO nanowires coupled with CuS nanoparticles

Science.gov (United States)

Li, Wei; Wang, Guojing; Feng, Yimeng; Li, Zhengcao

2018-01-01

In this research, a kind of highly efficient semiconductor photocatalyst was fabricated by depositing CuS nanoparticles uniformly on the surface of Co-doped ZnO nanowires. ZnO nanowires were synthesized by hydrothermal method and CuS nanoparticles were modified by successive ionic layer adsorption and reaction (SILAR). By conducting methyl orange (MO) degradation experiments under the illumination of visible light, the photocatalytic activity of Co-doped ZnO nanowires modified with CuS nanoparticles was found to be nearly three times active when compared to bare ZnO nanowires. Its superior photocatalytic performance has two main reasons. The doped Co2+ ions can inhibit the recombination of photo-generated electron-hole pairs and decrease the optical bandgap, while the p-n heterostructure can enhance the visible light absorption ability and promote the separation of photo-excited charge carriers. Furthermore, the effect of the amount of deposited CuS nanoparticles on the photocatalysis was also investigated. The photocatalytic efficiency firstly raised along with the increment of SILAR cycle times and reached a maximum at 10 cycles but then decreased as the cycle times continue to increase. This originates from that an excessive amount of CuS would not only cover the active reacting sites, but also serve as recombination centers. Overall, this new nanostructure is expected to work as an efficient photocatalyst.

Phosphorus acceptor doped ZnO nanowires prepared by pulsed-laser deposition

International Nuclear Information System (INIS)

Cao, B Q; Lorenz, M; Rahm, A; Wenckstern, H von; Czekalla, C; Lenzner, J; Benndorf, G; Grundmann, M

2007-01-01

Phosphorus-doped ZnO (ZnO:P) nanowires were successfully prepared by a novel high-pressure pulsed-laser deposition process using phosphorus pentoxide as the dopant source. Detailed cathodoluminescence studies of single ZnO:P nanowires revealed characteristic phosphorus acceptor-related peaks: neutral acceptor-bound exciton emission (A 0 , X, 3.356 eV), free-to-neutral-acceptor emission (e, A 0 , 3.314 eV), and donor-to-acceptor pair emission (DAP, ∼3.24 and ∼3.04 eV). This means that stable acceptor levels with a binding energy of about 122 meV have been induced in the nanowires by phosphorus doping. Moreover, the induced acceptors are distributed homogeneously along the doped nanowires

Quenching of the surface-state-related photoluminescence in Ni-coated ZnO nanowires

Energy Technology Data Exchange (ETDEWEB)

Tang Yang [Key Laboratory of Excited State Processes, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, 16 East Nan-Hu Road, Open Economic Zone, Changchun 130033 (China); Graduate School of the Chinese Academy of Sciences (China); Zhao Dongxu, E-mail: dxzhao2000@yahoo.com.c [Key Laboratory of Excited State Processes, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, 16 East Nan-Hu Road, Open Economic Zone, Changchun 130033 (China); Zhang Jiying; Shen Dezhen [Key Laboratory of Excited State Processes, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, 16 East Nan-Hu Road, Open Economic Zone, Changchun 130033 (China)

2010-11-01

Nickel-coated ZnO nanowires (NWs) were fabricated by electrodepositing Ni particles on ZnO NW arrays. The morphological, magnetic, and photoluminescent properties of the Ni-coated ZnO NWs were investigated. The Ni particles were deposited on the ZnO NWs' surface along its length to form a Ni/ZnO shell-core structure. The Ni-coated ZnO NWs exhibited more isotropic characteristic than the electrodeposited Ni films owing to the isotropic sphere structure of the Ni particles. A strong ultraviolet emission can be obtained from the Ni-coated ZnO NWs, while the green emission related to surface states was quenched by the passivated layer.

Quenching of the surface-state-related photoluminescence in Ni-coated ZnO nanowires

International Nuclear Information System (INIS)

Tang Yang; Zhao Dongxu; Zhang Jiying; Shen Dezhen

2010-01-01

Nickel-coated ZnO nanowires (NWs) were fabricated by electrodepositing Ni particles on ZnO NW arrays. The morphological, magnetic, and photoluminescent properties of the Ni-coated ZnO NWs were investigated. The Ni particles were deposited on the ZnO NWs' surface along its length to form a Ni/ZnO shell-core structure. The Ni-coated ZnO NWs exhibited more isotropic characteristic than the electrodeposited Ni films owing to the isotropic sphere structure of the Ni particles. A strong ultraviolet emission can be obtained from the Ni-coated ZnO NWs, while the green emission related to surface states was quenched by the passivated layer.

Insights into the Controllable Chemical Composition of Metal Oxide Nanowires and Graphene Aerogels

Science.gov (United States)

Goldstein, Anna Patrice

The design and synthesis of materials that absorb visible light and create fuel to store solar energy is a pursuit that has captivated chemists for decades. In order to take part in solar water splitting, i.e. the production of hydrogen and oxygen gas from water and sunlight, electrode materials must fit specific requirements in terms of their electronic structure. Zinc oxide (ZnO) and titanium dioxide (TiO2) are both of interest for their ability to produce oxygen from photogenerated holes, but their band gaps are too large to capture a significant portion of the solar spectrum. We address this challenge by modifying the crystal structures of ZnO and TiO 2 to make lower band gap materials. Furthermore, we use nanowires as the synthetic template for these materials because they provide a large semiconductor-liquid interfacial area. ZnO nanowires can be alloyed with In3+, Fe3+ and other trivalent metal ions to form a unique structure with the formula M2O3(ZnO)n, also known as MZO. We synthesize indium zinc oxide (IZO) and indium iron zinc oxide (IFZO) nanowires and study their crystal structure using atomically-resolved transmission electron microscopy (TEM), among other methods. We elucidate a structural model for MZO that resolves inconsistencies in the existing literature, based on the identification of the zigzag layer as an inversion domain boundary. These nanowires are shown to have a lower band gap than ZnO and produce photocurrent under visible light illumination. The solid-state diffusion reaction to form ternary titanates is also studied by TEM. TiO2 nanowires are coated with metal oxides by a variety of deposition methods, and then converted to MTiO3 at high temperatures, where M is a divalent transition metal ion such as Mn 2+, CO2+, or Ni2+. When Co3O 4 particles attached to TiO2 nanowires are annealed for a short time, we observe the formation of a CoO(111)/TiO2 (010) interface. If the nanowires are instead coated with Co(NO3)2 salt and then annealed

Pd/PdO functionalization of SnO{sub 2} nanowires and ZnO nanotetrapods

Energy Technology Data Exchange (ETDEWEB)

De Zorzi, C.; Rossetto, G. [ICIS-CNR, Padova (Italy); Calestani, D.; Zha, M.Z.; Zappettini, A.; Lazzarini, L.; Villani, M.; Zanotti, L. [IMEM-CNR, Parma (Italy); El Habra, N. [ICIS-CNR, Padova (Italy); Dipt. Scienze Chimiche, Universita di Padova (Italy)

2011-08-15

Tin oxide (SnO{sub 2}) and zinc oxide (ZnO) nanostructures are widely studied because of their peculiar physical and chemical properties and the large number of possible application fields. Surface functionalization of these materials is a very important topic because it is a powerful tool for modifying or tuning their properties, in order to better match the device requests. For example, palladium/palladium oxide (Pd/PdO) nanoparticles are often used to enhance selectivity of chemoresistive gas sensing properties of metal-oxide nanostructures. SnO{sub 2} nanowires and ZnO nanotetrapods have been grown on large areas by a combination of metal evaporation and controlled oxidation, while a MOCVD (Metal Organic Chemical Vapor Deposition) process has been chosen in order to deposit Pd/PdO nanoparticles on the surface of the obtained oxide nanostructures. Samples morphology, structure and composition have been studied by means of SEM and TEM microscopy, EDS microanalysis and X-Ray diffraction. The different results, obtained as a function of the synthesis and annealing parameters, are discussed focusing the attention to the experimental conditions that allowed the authors to obtain an optimal ''spotted'' coverage of oxide nanostructures, which is often required for gas sensing application. (copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Enhanced photoelectric performance in self-powered UV detectors based on ZnO nanowires with plasmonic Au nanoparticles scattered electrolyte

Science.gov (United States)

Zeng, Yiyu; Ye, Zhizhen; Lu, Bin; Dai, Wei; Pan, Xinhua

2016-04-01

Vertically aligned ZnO nanowires (NWs) were grown on a fluorine-doped tin-oxide-coated glass substrate by a hydrothermal method. Au nanoparticles were well dispersed in the mixed solution of ethanol and deionized water. A simple self-powered ultraviolet detector based on solid-liquid heterojunction was fabricated, utilizing ZnO NWs as active photoanode and such prepared mixed solution as electrolyte. The introduction of Au nanoparticles results in considerable improvements in the responsivity and sensitivity of the device compared with the one using deionized water as electrolyte, which is attributed to the enhanced light harvesting by Au nanoparticles.

Transport and structural characterization of solution-processable doped ZnO nanowires

KAUST Repository

Noriega, Rodrigo; Goris, Ludwig; Rivnay, Jonathan; Scholl, Jonathan; Thompson, Linda M.; Palke, Aaron C.; Stebbins, Jonathan F.; Salleo, Alberto

2009-01-01

The use of ZnO nanowires has become a widespread topic of interest in optoelectronics. In order to correctly assess the quality, functionality, and possible applications of such nanostructures it is important to accurately understand

Study of quantum confinement effects in ZnO nanostructures

Science.gov (United States)

Movlarooy, Tayebeh

2018-03-01

Motivation to fact that zinc oxide nanowires and nanotubes with successful synthesis and the mechanism of formation, stability and electronic properties have been investigated; in this study the structural, electronic properties and quantum confinement effects of zinc oxide nanotubes and nanowires with different diameters are discussed. The calculations within density functional theory and the pseudo potential approximation are done. The electronic structure and energy gap for Armchair and zigzag ZnO nanotubes with a diameter of about 4 to 55 Angstrom and ZnO nanowires with a diameter range of 4 to 23 Å is calculated. The results revealed that due to the quantum confinement effects, by reducing the diameter of nanowires and nanotubes, the energy gap increases. Zinc oxide semiconductor nanostructures since having direct band gap with size-dependent and quantum confinement effect are recommended as an appropriate candidate for making nanoscale optoelectronic devices.

Oxide p-n Heterojunction of Cu2O/ZnO Nanowires and Their Photovoltaic Performance

Directory of Open Access Journals (Sweden)

Seung Ki Baek

2013-01-01

Full Text Available Oxide p-n heterojunction devices consisting of p-Cu2O/n-ZnO nanowires were fabricated on ITO/glass substrates and their photovoltaic performances were investigated. The vertically arrayed ZnO nanowires were grown by metal organic chemical vapor deposition, which was followed by the electrodeposition of the p-type Cu2O layer. Prior to the fabrication of solar cells, the effect of bath pH on properties of the absorber layers was studied to determine the optimal condition of the Cu2O electrodeposition process. With the constant pH 11 solution, the Cu2O layer preferred the (111 orientation, which gave low electrical resistivity and high optical absorption. The Cu2O (pH 11/ZnO nanowire-based solar cell exhibited a higher conversion efficiency of 0.27% than the planar structure solar cell (0.13%, because of the effective charge collection in the long wavelength region and because of the enhanced junction area.

Quantitative and simultaneous analysis of the polarity of polycrystalline ZnO seed layers and related nanowires grown by wet chemical deposition

Science.gov (United States)

Guillemin, Sophie; Parize, Romain; Carabetta, Joseph; Cantelli, Valentina; Albertini, David; Gautier, Brice; Brémond, Georges; Fong, Dillon D.; Renevier, Hubert; Consonni, Vincent

2017-03-01

The polarity in ZnO nanowires is an important issue since it strongly affects surface configuration and reactivity, nucleation and growth, electro-optical properties, and nanoscale-engineering device performances. However, measuring statistically the polarity of ZnO nanowire arrays grown by chemical bath deposition and elucidating its correlation with the polarity of the underneath polycrystalline ZnO seed layer grown by the sol-gel process represents a major difficulty. To address that issue, we combine resonant x-ray diffraction (XRD) at Zn K-edge using synchrotron radiation with piezoelectric force microscopy and polarity-sensitive chemical etching to statistically investigate the polarity of more than 107 nano-objects both on the macroscopic and local microscopic scales, respectively. By using high temperature annealing under an argon atmosphere, it is shown that the compact, highly c-axis oriented ZnO seed layer is more than 92% Zn-polar and that only a few small O-polar ZnO grains with an amount less than 8% are formed. Correlatively, the resulting ZnO nanowires are also found to be Zn-polar, indicating that their polarity is transferred from the c-axis oriented ZnO grains acting as nucleation sites in the seed layer. These findings pave the way for the development of new strategies to form unipolar ZnO nanowire arrays as a requirement for a number of nanoscale-engineering devices like piezoelectric nanogenerators. They also highlight the great advantage of resonant XRD as a macroscopic, non-destructive method to simultaneously and statistically measure the polarity of ZnO nanowire arrays and of the underneath ZnO seed layer.

Chemical bath deposited PbS thin films on ZnO nanowires for photovoltaic applications

Energy Technology Data Exchange (ETDEWEB)

Gertman, Ronen [Dept of Chemistry, Ben Gurion University of the Negev, Be' er Sheva 84105 (Israel); Ilse Katz Institute for Nanoscale Science and Technology, Ben Gurion University of the Negev, Be' er Sheva 84105 (Israel); Osherov, Anna; Golan, Yuval [Dept of Materials Engineering, Ben Gurion University of the Negev, Be' er Sheva 84105 (Israel); Ilse Katz Institute for Nanoscale Science and Technology, Ben Gurion University of the Negev, Be' er Sheva 84105 (Israel); Visoly-Fisher, Iris, E-mail: irisvf@bgu.ac.il [Ilse Katz Institute for Nanoscale Science and Technology, Ben Gurion University of the Negev, Be' er Sheva 84105 (Israel); Department of Solar Energy and Environmental Physics, Swiss Institute for Dryland Environmental and Energy Research, Jacob Blaustein Institutes for Desert Research, Ben Gurion University of the Negev, Sede Boqer Campus 84990 (Israel)

2014-01-01

Photovoltaic devices usually exploit mid-range band-gap semiconductors which absorb in the visible range of the solar spectrum. However, much energy is lost in the IR and near-IR range. We combined the advantages of small band-gap, bulk-like PbS deposited by facile, cheap and direct chemical bath deposition (CBD), with the good electronic properties of ZnO and the large surface area of nanowires, towards low cost photovoltaic devices utilizing IR and near-IR light. Surprisingly, CBD of PbS on ZnO, and particularly on ZnO nanowires, was not studied hitherto. Therefore, the mechanism of PbS growth by chemical bath deposition on ZnO nanowires was studied in details. A visible proof is shown for a growth mechanism starting from amorphous Pb(OH){sub 2} layer, that evolved into the ‘ion-by-ion’ growth mechanism. The growth mechanism and the resulting morphology at low temperatures were controlled by the thiourea concentration. The grain size affected the magnitude of the band-gap and was controlled by the deposition temperatures. Deposition above 40 °C resulted in bulk-like PbS with an optical band-gap of 0.4 eV. Methods were demonstrated for achieving complete PbS coverage of the complex ZnO NW architecture, a crucial requirement in optoelectronic devices to prevent shorts. Measurements of photocurrents under white and near-IR (784 nm) illumination showed that despite a 200 meV barrier for electron transfer at the PbS/ZnO interface, extraction of photo-electrons from PbS to the ZnO was feasible. The ability to harvest electrons from a narrow band-gap semiconductor deposited on a large surface-area electrode can advance the field towards high efficiency, low cost IR and near-IR sensors and third generation solar cells. - Highlights: • PbS was deposited on ZnO nanowires using chemical bath deposition. • At 50 °C the growth mechanism starts from an amorphous Pb(OH){sub 2} layer. • At 5 °C the growth mechanism of PbS can be controlled by thiourea concentrations

Interfacial passivation of CdS layer to CdSe quantum dots-sensitized electrodeposited ZnO nanowire thin films

International Nuclear Information System (INIS)

Zhang, Jingbo; Sun, Chuanzhen; Bai, Shouli; Luo, Ruixian; Chen, Aifan; Sun, Lina; Lin, Yuan

2013-01-01

ZnO porous thin films with nanowire structure were deposited by the one-step electrochemical deposition method. And a CdS layer was coated on the as-deposited ZnO nanowire thin films by successive ionic layer adsorption and reaction (SILAR) method to passivate surface states. Then the films were further sensitized by CdSe quantum dots (QDs) to serve as a photoanode for fabricating quantum dots-sensitized solar cells (QDSSCs). The effect of the CdS interfacial passivation layer on the performance of the QDSSCs was systematically investigated by varying the SILAR cycle number and heating the passivation layer. The amorphous CdS layer with an optimized thickness can effectively suppress the recombination of the injected electrons with holes on QDs and the redox electrolyte. The newly formed CdS layer on the surface of the ZnO nanowire thin film obviously prolongs the electron lifetime in the passivated ZnO nanoporous thin film because of the lower surface trap density in the ZnO nanowires after CdS deposition, which is favorable to the higher short-circuit photocurrent density (J sc ). For the CdSe QDs-sensitized ZnO nanoporous thin film with the interfacial passivation layer, the J sc and conversion efficiency can reach a maximum of 8.36 mA cm −2 and 2.36%, respectively. The conversion efficiency was improved by 83.47% compared with that of the cell based on the CdSe QDs-sensitized ZnO nanoporous thin film without CdS interfacial passivation (0.39%)

Characterizing and simulation the scintillation properties of zinc oxide nanowires in AAO membrane for medical imaging applications

International Nuclear Information System (INIS)

Esfandi, F.; Saramad, S.; Shahmirzadi, M. Rezaei

2017-01-01

In this work, a new method is proposed for extracting some X-ray detection properties of ZnO nanowires electrodeposited on Anodized Aluminum Oxide (AAO) nanoporous template. The results show that the detection efficiency for 12μm thickness of zinc oxide nano scintillator at an energy of 9.8 keV, near the K-edge of ZnO (9.65 keV), is 24%. The X-rays that interact with AAO can also generate electrons that reach the nano scintillator. The scintillation events of these electrons are seen as a low energy tail in the spectrum. In addition, it is found that all the X-rays that are absorbed in 300 nm thickness of the gold layer on the top of the zinc oxide nanowires can participate in the scintillation process with an efficiency of 6%. Hence, the scintillation detection efficiency of the whole detector for 9.8 keV X-ray energy is 30%. The simulation results from Geant4 and the experimental detected photons per MeV energy deposition are also used to extract the light yield of the zinc oxide nano scintillator. The results show that the light yield of the zinc oxide nanowires deposited by the electrochemical method is approximately the same as for single crystal zinc oxide scintillator (9000). Much better spatial resolution of this nano scintillator in comparison to the bulk ones is an advantage which candidates this nano scintillator for medical imaging applications.

Room temperature strong coupling effects from single ZnO nanowire microcavity

KAUST Repository

Das, Ayan; Heo, Junseok; Bayraktaroglu, Adrian; Guo, Wei; Ng, Tien Khee; Phillips, Jamie; Ooi, Boon S.; Bhattacharya, Pallab

2012-01-01

Strong coupling effects in a dielectric microcavity with a single ZnO nanowire embedded in it have been investigated at room temperature. A large Rabi splitting of ?100 meV is obtained from the polariton dispersion and a non

CdTe deposition by successive ionic layer adsorption and reaction (SILAR) technique onto ZnO nanowires

Energy Technology Data Exchange (ETDEWEB)

Salazar, Raul; Delamoreanu, Alexandru; Saidi, Bilel; Ivanova, Valentina [CEA, LETI, MINATEC Campus, 17 Rue des Martyrs, 38054, Grenoble (France); Levy-Clement, Claude [CNRS, Institut de Chimie et des Materiaux de Paris-Est, 94320, Thiais (France)

2014-09-15

In this study is reported CdTe deposition by Successive Ionic Layer Adsorption and reaction (SILAR) at room temperature onto ZnO nanowires (NWs). The as-deposited CdTe layer exhibits poor crystalline quality and not well defined optical transition which is probably result of its amorphous nature. The implementation of an annealing step and chemical treatment by CdCl{sub 2} to the classical SILAR technique improved significantly the CdTe film quality. The XRD analysis showed that the as treated layers are crystallized in the cubic zinc blende structure. The full coverage of ZnO nanowires and thickness of the CdTe shell, composed of small crystallites, was confirmed by STEM and TEM analysis. The layer thickness could be controlled by the number of SILAR cycles. The sharper optical transitions for the annealed and CdCl{sub 2} treated heterostructures additionally proves the enhancement of the layer crystalline quality. For comparison CdTe was also deposited by close space sublimation (CSS) method onto ZnO nanowires. It is shown that the SILAR deposited CdTe exhibits equal crystalline and optical properties to that prepared by CSS. These results demonstrate that SILAR technique is more suitable for conformal thin film deposition on nanostructures. CdTe extremely thin film deposited by SILAR method onto ZnO nanowire. (copyright 2014 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

CdTe deposition by successive ionic layer adsorption and reaction (SILAR) technique onto ZnO nanowires

International Nuclear Information System (INIS)

Salazar, Raul; Delamoreanu, Alexandru; Saidi, Bilel; Ivanova, Valentina; Levy-Clement, Claude

2014-01-01

In this study is reported CdTe deposition by Successive Ionic Layer Adsorption and reaction (SILAR) at room temperature onto ZnO nanowires (NWs). The as-deposited CdTe layer exhibits poor crystalline quality and not well defined optical transition which is probably result of its amorphous nature. The implementation of an annealing step and chemical treatment by CdCl 2 to the classical SILAR technique improved significantly the CdTe film quality. The XRD analysis showed that the as treated layers are crystallized in the cubic zinc blende structure. The full coverage of ZnO nanowires and thickness of the CdTe shell, composed of small crystallites, was confirmed by STEM and TEM analysis. The layer thickness could be controlled by the number of SILAR cycles. The sharper optical transitions for the annealed and CdCl 2 treated heterostructures additionally proves the enhancement of the layer crystalline quality. For comparison CdTe was also deposited by close space sublimation (CSS) method onto ZnO nanowires. It is shown that the SILAR deposited CdTe exhibits equal crystalline and optical properties to that prepared by CSS. These results demonstrate that SILAR technique is more suitable for conformal thin film deposition on nanostructures. CdTe extremely thin film deposited by SILAR method onto ZnO nanowire. (copyright 2014 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Passivation of ZnO Nanowire Guests and 3D Inverse Opal Host Photoanodes for Dye-Sensitized Solar Cells

KAUST Repository

Labouchere, Philippe

2014-04-23

A hierarchical host-guest nanostructured photoanode is reported for dye-sensitized solar cells. It is composed of ZnO nanowires grown in situ into the macropores of a 3D ZnO inverse opal structure, which acts both as a seed layer and as a conductive backbone host. Using a combination of self-assembly, hydrothermal or electrodeposition of single crystalline ZnO nanowires and TiO2 passivation, a novel photoanode with scattering capability for optimal light harvesting is fabricated. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Methods for synthesizing metal oxide nanowires

Science.gov (United States)

Sunkara, Mahendra Kumar; Kumar, Vivekanand; Kim, Jeong H.; Clark, Ezra Lee

2016-08-09

A method of synthesizing a metal oxide nanowire includes the steps of: combining an amount of a transition metal or a transition metal oxide with an amount of an alkali metal compound to produce a mixture; activating a plasma discharge reactor to create a plasma discharge; exposing the mixture to the plasma discharge for a first predetermined time period such that transition metal oxide nanowires are formed; contacting the transition metal oxide nanowires with an acid solution such that an alkali metal ion is exchanged for a hydrogen ion on each of the transition metal oxide nanowires; and exposing the transition metal oxide nanowires to the plasma discharge for a second predetermined time period to thermally anneal the transition metal oxide nanowires. Transition metal oxide nanowires produced using the synthesis methods described herein are also provided.

ZnO nanowires coated stainless steel meshes as hierarchical photocatalysts for catalytic photodegradation of four kinds of organic pollutants

Energy Technology Data Exchange (ETDEWEB)

Ko, Fu-Hsiang; Lo, Wei-Ju [Department of Materials Science and Engineering, National Chiao Tung University, Hsinchu, 30010, Taiwan (China); Chang, Yu-Cheng, E-mail: ychang0127@gmail.com [Department of Materials Science and Engineering, Feng Chia University, Taichung, 40724, Taiwan (China); Guo, Jin-You; Chen, Chien-Ming [Department of Materials Science and Engineering, Feng Chia University, Taichung, 40724, Taiwan (China)

2016-09-05

ZnO nanostructures were grown on the stainless steel mesh substrates using an aqueous chemical growth method. The different additives (such as 1,3-diaminopropane and polyethyleneimine) can be used to control the morphology of ZnO nanostructures. ZnO nanowires exhibit very prominent green emission and week UV emission from defect and band gap in the cathodoluminescence spectrum, respectively. The different morphology of ZnO nanostructures on the stainless steel mesh substrates can be used to irradiate UV light for the photocatalytic degradation of four kinds of organic pollutants, such as methylene blue, rhodamine 6G, methyl orange, and 4-nitrophenol. The ZnO nanowires can provide a higher surface-to-volume ratio and stronger defect emission, resulting in their highest photocatalytic performance in 10 W UV light irradiation. The ZnO nanowire arrays on the stainless steel mesh substrates provide a large-scale, facile, low-cost, high surface area, and high photocatalytic efficiency, which shall be of significant value for practical applications of the decomposition of environment pollutants and reusing of wastewater treatment. - Highlights: • ZnO NWs were grown on the stainless steel mesh by aqueous chemical growth method. • Longer ZnO NW arrays have been grown at short reaction time (2 h). • ZnO NWs revealed green emission from surface defect in the CL spectrum. • The different morphologies of ZnO were evaluated organic pollutant degradation. • ZnO NWs were also exhibited great photocatalytic activity and reusability.

On the difficulties in characterizing ZnO nanowires

Energy Technology Data Exchange (ETDEWEB)

Schlenker, E; Bakin, A; Wehmann, H-H; Waag, A [Institute of Semiconductor Technology, Technical University Braunschweig, Hans-Sommer-Strasse 66, D-38106 Braunschweig (Germany); Weimann, T; Hinze, P; Weber, D H [Physikalisch-Technische Bundesanstalt (PTB), Bundesallee 100, D-38116 Braunschweig (Germany); Goelzhaeuser, A [Physics of Supramolecular Systems, University of Bielefeld, Universitaetsstrasse 25, D-33615 Bielefeld (Germany)], E-mail: e.schlenker@tu-bs.de

2008-09-10

The electrical properties of single ZnO nanowires grown by vapor phase transport were investigated. While some samples were contacted by Ti/Au electrodes, another set of samples was investigated using a manipulator tip in a low energy electron point-source microscope. The deduced resistivities range from 1 to 10{sup 3} {omega}cm. Additionally, the resistivities of nanowires from multiple publications were brought together and compared to the values obtained from our measurements. The overview of all data shows enormous differences (10{sup -3}-10{sup 5} {omega}cm) in the measured resistivities. In order to reveal the origin of the discrepancies, the influence of growth parameters, measuring methods, contact resistances, crystal structures and ambient conditions are investigated and discussed in detail.

On the difficulties in characterizing ZnO nanowires.

Science.gov (United States)

Schlenker, E; Bakin, A; Weimann, T; Hinze, P; Weber, D H; Gölzhäuser, A; Wehmann, H-H; Waag, A

2008-09-10

The electrical properties of single ZnO nanowires grown by vapor phase transport were investigated. While some samples were contacted by Ti/Au electrodes, another set of samples was investigated using a manipulator tip in a low energy electron point-source microscope. The deduced resistivities range from 1 to 10(3) Ωcm. Additionally, the resistivities of nanowires from multiple publications were brought together and compared to the values obtained from our measurements. The overview of all data shows enormous differences (10(-3)-10(5) Ωcm) in the measured resistivities. In order to reveal the origin of the discrepancies, the influence of growth parameters, measuring methods, contact resistances, crystal structures and ambient conditions are investigated and discussed in detail.

Template-Assisted Hydrothermal Growth of Aligned Zinc Oxide Nanowires for Piezoelectric Energy Harvesting Applications.

Science.gov (United States)

Ou, Canlin; Sanchez-Jimenez, Pedro E; Datta, Anuja; Boughey, Francesca L; Whiter, Richard A; Sahonta, Suman-Lata; Kar-Narayan, Sohini

2016-06-08

A flexible and robust piezoelectric nanogenerator (NG) based on a polymer-ceramic nanocomposite structure has been successfully fabricated via a cost-effective and scalable template-assisted hydrothermal synthesis method. Vertically aligned arrays of dense and uniform zinc oxide (ZnO) nanowires (NWs) with high aspect ratio (diameter ∼250 nm, length ∼12 μm) were grown within nanoporous polycarbonate (PC) templates. The energy conversion efficiency was found to be ∼4.2%, which is comparable to previously reported values for ZnO NWs. The resulting NG is found to have excellent fatigue performance, being relatively immune to detrimental environmental factors and mechanical failure, as the constituent ZnO NWs remain embedded and protected inside the polymer matrix.

Morphology engineering of ZnO nanostructures for high performance supercapacitors: enhanced electrochemistry of ZnO nanocones compared to ZnO nanowires

Science.gov (United States)

He, Xiaoli; Yoo, Joung Eun; Lee, Min Ho; Bae, Joonho

2017-06-01

In this work, the morphology of ZnO nanostructures is engineered to demonstrate enhanced supercapacitor characteristics of ZnO nanocones (NCs) compared to ZnO nanowires (NWs). ZnO NCs are obtained by chemically etching ZnO NWs. Electrochemical characteristics of ZnO NCs and NWs are extensively investigated to demonstrate morphology dependent capacitive performance of one dimensional ZnO nanostructures. Cyclic voltammetry measurements on these two kinds of electrodes in a three-electrode cell confirms that ZnO NCs exhibit a high specific capacitance of 378.5 F g-1 at a scan rate of 20 mV s-1, which is almost twice that of ZnO NWs (191.5 F g-1). The charge-discharge and electrochemical impedance spectroscopy measurements also clearly result in enhanced capacitive performance of NCs as evidenced by higher specific capacitances and lower internal resistance. Asymmetric supercapacitors are fabricated using activated carbon (AC) as the negative electrode and ZnO NWs and NCs as positive electrodes. The ZnO NC⫽AC can deliver a maximum specific capacitance of 126 F g-1 at a current density of 1.33 A g-1 with an energy density of 25.2 W h kg-1 at the power density of 896.44 W kg-1. In contrast, ZnO NW⫽AC displays 63% of the capacitance obtained from the ZnO NC⫽AC supercapacitor. The enhanced performance of NCs is attributed to the higher surface area of ZnO nanostructures after the morphology is altered from NWs to NCs.

Non-classical logic inverter coupling a ZnO nanowire-based Schottky barrier transistor and adjacent Schottky diode.

Science.gov (United States)

Hosseini Shokouh, Seyed Hossein; Raza, Syed Raza Ali; Lee, Hee Sung; Im, Seongil

2014-08-21

On a single ZnO nanowire (NW), we fabricated an inverter-type device comprising a Schottky diode (SD) and field-effect transistor (FET), aiming at 1-dimensional (1D) electronic circuits with low power consumption. The SD and adjacent FET worked respectively as the load and driver, so that voltage signals could be easily extracted as the output. In addition, NW FET with a transparent conducting oxide as top gate turned out to be very photosensitive, although ZnO NW SD was blind to visible light. Based on this, we could achieve an array of photo-inverter cells on one NW. Our non-classical inverter is regarded as quite practical for both logic and photo-sensing due to its performance as well as simple device configuration.

Synthetic and effect of annealing on the luminescent properties of ZnO nanowire

Energy Technology Data Exchange (ETDEWEB)

Mo, Zhao-Jun, E-mail: mzjmzj163@163.com [Institute of Material Physics, Key Laboratory of Display Materials and Photoelectric Devices of Ministry of Education of Ministry of Education, Tianjin University of Technology, Tianjin 300191 (China); Hao, Zhi-Hong [Tianjin Vocational Institute, Tianjin (China); Wu, Hai-Zhen; Yang, Qing; Zhuo, Ping; Yang, Hui; Xu, Jian-Ping; Zhang, Xiao-Song [Institute of Material Physics, Key Laboratory of Display Materials and Photoelectric Devices of Ministry of Education of Ministry of Education, Tianjin University of Technology, Tianjin 300191 (China); Li, Lan, E-mail: lilan2000us@126.com [Institute of Material Physics, Key Laboratory of Display Materials and Photoelectric Devices of Ministry of Education of Ministry of Education, Tianjin University of Technology, Tianjin 300191 (China)

2016-07-15

ZnO nanowires were successfully fabricated by using the hydrothermal method in the existence of the poly ethylene glycol (PEG) with the molecular weight of 200. The experimental results exhibit that the ZnO nanowires with the diameter of ~30 nm and the length of ten micrometers. PL spectra show a weak ultraviolet emission and an intense broad visible emission band for as-grown and annealed samples. These visible emission bands exhibit red-shifts from green (545 nm) to yellow (580 nm) and blue-shifts from yellow (580 nm) to green (520 nm) by annealing at aerobic or anaerobic environment, it indicates that the defect types are changed by annealed at different environment. Additionally, the red-shifts (520 nm) and blue-shifts (580) can match up the bimodal lorentzian fitting (520 nm and 583 nm) of as-growth, which suggest that the visible emission band (545 nm) is closely related to oxygen defects. The oxygen atomic can enter into the crystal lattice of ZnO and decrease the oxygen vacancy in air or oxygen, whereas, more oxygen vacancy defects is gave rise in vacuum annealed. We guess the energy levels of the intrinsic defects in ZnO nanowire maybe like that: the electrons of Zn{sub i} defects compound with holes of V{sub Zn}, O{sub i} and O{sub Zn} levels and conform to the yellow emission, and the green emission corresponds to the electron transition from the association defects deep donor level to the valence band.

Fabrication of a Combustion-Reacted High-Performance ZnO Electron Transport Layer with Silver Nanowire Electrodes for Organic Solar Cells.

Science.gov (United States)

Park, Minkyu; Lee, Sang-Hoon; Kim, Donghyuk; Kang, Juhoon; Lee, Jung-Yong; Han, Seung Min

2018-02-28

Herein, a new methodology for solution-processed ZnO fabrication on Ag nanowire network electrode via combustion reaction is reported, where the amount of heat emitted during combustion was minimized by controlling the reaction temperature to avoid damaging the underlying Ag nanowires. The degree of participation of acetylacetones, which are volatile fuels in the combustion reaction, was found to vary with the reaction temperature, as revealed by thermogravimetric and compositional analyses. An optimized processing temperature of 180 °C was chosen to successfully fabricate a combustion-reacted ZnO and Ag nanowire hybrid electrode with a sheet resistance of 30 Ω/sq and transmittance of 87%. A combustion-reacted ZnO on Ag nanowire hybrid structure was demonstrated as an efficient transparent electrode and electron transport layer for the PTB7-Th-based polymer solar cells. The superior electrical conductivity of combustion-reacted ZnO, compared to that of conventional sol-gel ZnO, increased the external quantum efficiency over the entire absorption range, whereas a unique light scattering effect due to the presence of nanopores in the combustion-derived ZnO further enhanced the external quantum efficiency in the 450-550 nm wavelength range. A power conversion efficiency of 8.48% was demonstrated for the PTB7-Th-based polymer solar cell with the use of a combustion-reacted ZnO/Ag NW hybrid transparent electrode.

Photoelectrochemical performance of N-doped ZnO branched nanowire photoanodes

Directory of Open Access Journals (Sweden)

Shrok Allami

2017-10-01

Full Text Available A ZnO branched-nanowire (BNW photoanode was doped with N for use in a photoelectrochemical cell (PEC to generate H2 from water splitting. First, ZnO BNWs were synthesized by chemical bath deposition method. Two experimental methods were used for N-doping: the time-controlled direct-current glow discharge plasma (DCGDP and the DC magnetron plasma (DCMP methods, to optimize N-doping of the NW structure. X-ray photoelectron spectroscopy (XPS provided the N distribution and atomic percentage in the BNWs. The XPS results confirmed that N distribution into ZnO BNWs occurred by N substitution of O sites in the ZnO structure and through well-screened molecular N2. The morphologies and structures of the fabricated nanostructures were investigated by field-emission scanning electron microscopy and X-ray diffraction respectively. The photoanode performance was demonstrated in photoelectrochemical studies at various power densities under both dark and illuminated conditions. Increasing the N amount in the ZnO BNWs increased the photocurrent in the PEC. Keywords: Engineering, Condensed matter physics, Nanotechnology, Materials science

Growth of antimony doped P-type zinc oxide nanowires for optoelectronics

Energy Technology Data Exchange (ETDEWEB)

Wang, Zhong Lin; Pradel, Ken

2016-09-27

In a method of growing p-type nanowires, a nanowire growth solution of zinc nitrate (Zn(NO.sub.3).sub.2), hexamethylenetetramine (HMTA) and polyethylenemine (800 M.sub.w PEI) is prepared. A dopant solution to the growth solution, the dopant solution including an equal molar ration of sodium hydroxide (NaOH), glycolic acid (C.sub.2H.sub.4O.sub.3) and antimony acetate (Sb(CH.sub.3COO).sub.3) in water is prepared. The dopant solution and the growth solution combine to generate a resulting solution that includes antimony to zinc in a ratio of between 0.2% molar to 2.0% molar, the resulting solution having a top surface. An ammonia solution is added to the resulting solution. A ZnO seed layer is applied to a substrate and the substrate is placed into the top surface of the resulting solution with the ZnO seed layer facing downwardly for a predetermined time until Sb-doped ZnO nanowires having a length of at least 5 .mu.m have grown from the ZnO seed layer.

Engineering of the photoluminescence of ZnO nanowires by different growth and annealing environments

DEFF Research Database (Denmark)

Fernandes Cauduro, André Luis; Sombrio, C I L; Franzen, P L

2015-01-01

Optical properties of ZnO nanowires were investigated through photoluminescence (PL) at room and low temperatures. An excitonic structure was observed in the UV band emission and we are able to distinguish between free excitons, bound excitons and donor acceptor pairs. The PL spectra shows deep...... level emissions ranging from 1.4 eV up to 2.8 eV, strongly depending on surface defects whereas the red emission (1.7 eV) is activated at cryogenic temperatures. We attribute the green luminescence (2.4 eV) emission to the presence of zinc vacancies into ZnO nanowires. Further evidences that confirm...... the mechanism are observed in the PL emission spectra after annealing in O2 or Ar environments....

Effect of atomic layer deposition temperature on the performance of top-down ZnO nanowire transistors

Science.gov (United States)

2014-01-01

This paper studies the effect of atomic layer deposition (ALD) temperature on the performance of top-down ZnO nanowire transistors. Electrical characteristics are presented for 10-μm ZnO nanowire field-effect transistors (FETs) and for deposition temperatures in the range 120°C to 210°C. Well-behaved transistor output characteristics are obtained for all deposition temperatures. It is shown that the maximum field-effect mobility occurs for an ALD temperature of 190°C. This maximum field-effect mobility corresponds with a maximum Hall effect bulk mobility and with a ZnO film that is stoichiometric. The optimized transistors have a field-effect mobility of 10 cm2/V.s, which is approximately ten times higher than can typically be achieved in thin-film amorphous silicon transistors. Furthermore, simulations indicate that the drain current and field-effect mobility extraction are limited by the contact resistance. When the effects of contact resistance are de-embedded, a field-effect mobility of 129 cm2/V.s is obtained. This excellent result demonstrates the promise of top-down ZnO nanowire technology for a wide variety of applications such as high-performance thin-film electronics, flexible electronics, and biosensing. PMID:25276107

Impedance analysis of PbS colloidal quantum dot solar cells with different ZnO nanowire lengths

Science.gov (United States)

Fukuda, Takeshi; Takahashi, Akihiro; Wang, Haibin; Takahira, Kazuya; Kubo, Takaya; Segawa, Hiroshi

2018-03-01

The photoconversion efficiency of colloidal quantum dot (QD) solar cells has been markedly improved by optimizing the surface passivation and device structure, and details of device physics are now under investigation. In this study, we investigated the resistance and capacitance components at the ZnO/PbS-QD interface and inside a PbS-QD layer by measuring the impedance spectrum while the interface area was controlled by changing the ZnO nanowire length. By evaluating the dependence of optical intensity and DC bias voltage on the ZnO nanowire length, only the capacitance was observed to be influenced by the interface area, and this indicates that photoinduced carriers are generated at the surface of PbS-QD. In addition, since the capacitance is proportional to the surface area of the QD, the interface area can be evaluated from the capacitance. Finally, photovoltaic performance was observed to increase with increasing ZnO nanowire length owing to the large interface area, and this result is in good agreement with the capacitance measurement.

Electronic Transport Properties of One Dimensional Zno Nanowires Studied Using Maximally-Localized Wannier Functions

Science.gov (United States)

Sun, Xu; Gu, Yousong; Wang, Xueqiang

2012-08-01

One dimensional ZnO NWs with different diameters and lengths have been investigated using density functional theory (DFT) and Maximally Localized Wannier Functions (MLWFs). It is found that ZnO NWs are direct band gap semiconductors and there exist a turn on voltage for observable current. ZnO nanowires with different diameters and lengths show distinctive turn-on voltage thresholds in I-V characteristics curves. The diameters of ZnO NWs are greatly influent the transport properties of ZnO NWs. For the ZnO NW with large diameter that has more states and higher transmission coefficients leads to narrow band gap and low turn on voltage. In the case of thinner diameters, the length of ZnO NW can effects the electron tunneling and longer supercell lead to higher turn on voltage.

Title: Using Alignment and 2D Network Simulations to Study Charge Transport Through Doped ZnO Nanowire Thin Film Electrodes

KAUST Repository

Phadke, Sujay; Lee, Jung-Yong; West, Jack; Peumans, Peter; Salleo, Alberto

2011-01-01

of magnitude lower than the single nanowire resistance. Simulations suggest that the conductivity of such thin film devices could be further enhanced by using longer nanowires. Solution processed Gallium doped ZnO nanowires are aligned on substrates using

Surface state modulation through wet chemical treatment as a route to controlling the electrical properties of ZnO nanowire arrays investigated with XPS

International Nuclear Information System (INIS)

Lord, Alex M.; Maffeis, Thierry G.; Allen, Martin W.; Morgan, David; Davies, Philip R.; Jones, Daniel R.; Evans, Jonathan E.; Smith, Nathan A.; Wilks, Steve P.

2014-01-01

Highlights: • Direct measurement of the surface band bending exhibited by ZnO nanowires using monochromatic XPS. • Modulation of the surface depletion region using wet chemical treatment (EtOH, H 2 O 2 ). • The measured surface potential barrier agrees with electrical measurements of individual nanowires. • H 2 O 2 depletes the nanowire of charge carriers while EtOH donates electrons at the surface. • EtOH has the effect of restoring the surface potential barrier of oxidised nanowires. - Abstract: ZnO is a wide bandgap semiconductor that has many potential applications including solar cell electrodes, transparent thin film transistors and gas/biological sensors. Since the surfaces of ZnO materials have no amorphous or oxidised layers, they are very environmentally sensitive, making control of their semiconductor properties challenging. In particular, the electronic properties of ZnO nanostructures are dominated by surface effects while surface conduction layers have been observed in thin films and bulk crystals. Therefore, the ability to use the ZnO materials in a controlled way depends on the development of simple techniques to modulate their surface electronic properties. Here, we use monochromatic x-ray photoelectron spectroscopy (XPS) to investigate the use of different wet chemical treatments (EtOH, H 2 O 2 ) to control the electronic properties of ZnO nanowires by modulating the surface depletion region. The valence band and core level XPS spectra are used to explore the relationship between the surface chemistry of the nanowires and the surface band bending

Electron transport properties in ZnO nanowires/poly(3-hexylthiophene) hybrid nanostructure

International Nuclear Information System (INIS)

Cheng Ke; Cheng Gang; Wang Shujie; Fu Dongwei; Zou Bingsuo; Du Zuliang

2010-01-01

The ZnO nanowires (NWs) array/poly(3-hexylthiophene) (P3HT) hybrid prototype device was fabricated. An ultraviolet (UV) light of λ = 350 nm is used to investigate the photo-electric properties of the ZnO NWs array and hybrid structure. In this way, we can avoid the excitation of P3HT, which can give us a real electron transport ability of ZnO NWs itself. Our results demonstrated a higher and faster photo-electric response of 3 s for the hybrid structure while 9 s for the ZnO NWs array. The surface states related slow photo-electric response was also observed for them. The charge transfer mechanism and the influence of surface states were discussed. The current work provides us profound understandings on the electron transport ability of ZnO NWs array in a working hybrid polymer solar cell, which is crucial for optimizing the device performance.

Heteroepitaxial Patterned Growth of Vertically Aligned and Periodically Distributed ZnO Nanowires on GaN Using Laser Interference Ablation

KAUST Repository

Yuan, Dajun

2010-08-23

A simple two-step method of fabricating vertically aligned and periodically distributed ZnO nanowires on gallium nitride (GaN) substrates is described. The method combines laser interference ablation (LIA) and low temperature hydrothermal decomposition. The ZnO nanowires grow heteroepitaxially on unablated regions of GaN over areas spanning 1 cm2, with a high degree of control over size, orientation, uniformity, and periodicity. High resolution transmission electron microscopy and scanning electron microscopy are utilized to study the structural characteristics of the LIA-patterned GaN substrate in detail. These studies reveal the possible mechanism for the preferential, site-selective growth of the ZnO nanowires. The method demonstrates high application potential for wafer-scale integration into sensor arrays, piezoelectric devices, and optoelectronic devices. © 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Atomic Layer Deposition of Nickel on ZnO Nanowire Arrays for High-Performance Supercapacitors.

Science.gov (United States)

Ren, Qing-Hua; Zhang, Yan; Lu, Hong-Liang; Wang, Yong-Ping; Liu, Wen-Jun; Ji, Xin-Ming; Devi, Anjana; Jiang, An-Quan; Zhang, David Wei

2018-01-10

A novel hybrid core-shell structure of ZnO nanowires (NWs)/Ni as a pseudocapacitor electrode was successfully fabricated by atomic layer deposition of a nickel shell, and its capacitive performance was systemically investigated. Transmission electron microscopy and X-ray photoelectron spectroscopy results indicated that the NiO was formed at the interface between ZnO and Ni where the Ni was oxidized by ZnO during the ALD of the Ni layer. Electrochemical measurement results revealed that the Ti/ZnO NWs/Ni (1500 cycles) electrode with a 30 nm thick Ni-NiO shell layer had the best supercapacitor properties including ultrahigh specific capacitance (∼2440 F g -1 ), good rate capability (80.5%) under high current charge-discharge conditions, and a relatively better cycling stability (86.7% of the initial value remained after 750 cycles at 10 A g -1 ). These attractive capacitive behaviors are mainly attributed to the unique core-shell structure and the combined effect of ZnO NW arrays as short charge transfer pathways for ion diffusion and electron transfer as well as conductive Ni serving as channel for the fast electron transport to Ti substrate. This high-performance Ti/ZnO NWs/Ni hybrid structure is expected to be one of a promising electrodes for high-performance supercapacitor applications.

Thermo-enhanced field emission from ZnO nanowires: Role of defects and application in a diode flat panel X-ray source

Energy Technology Data Exchange (ETDEWEB)

Zhang, Zhipeng; Chen, Daokun; Chen, Wenqing; Chen, Yicong; Song, Xiaomeng; Zhan, Runze; Deng, Shaozhi; Xu, Ningsheng; Chen, Jun, E-mail: stscjun@mail.sysu.edu.cn

2017-03-31

Highlights: • A thermo-enhanced field emission phenomenon was observed from dendritic ZnO nanowires under the temperature of 323–723 K. • Defect-assisted field emission mechanism was proposed and quantitative calculation fits well with the experiment results. • The mechanism was verified by the field emission from ZnO nanowires with different defect concentrations. • A diode X-ray source making use of thermo-enhanced field emission phenomenon was proposed for separate tuning of dose and energy. - Abstract: A thermo-enhanced field emission phenomenon was observed from ZnO nanowires. The field emission current increased by almost two orders of magnitude under a constant applied electric field, and the turn-on field decreased from 6.04 MV/m to 5.0 MV/m when the temperature increased from 323 to 723 K. The Poole–Frenkel electron excitation from the defect-induced trapping centers to the conduction band under high electric fields is believed to be the primary cause of the observed phenomenon. The experimental results fit well with the proposed physical model. The field emission from ZnO nanowires with different defect concentrations further confirmed the role of defects. Using the thermo-enhanced field emission phenomenon, a diode flat panel X-ray source was demonstrated, for which the energy and dose can be separately tuned. The thermo-enhanced field emission phenomenon observed from ZnO nanowires could be an effective way to realize a large area flat panel multi-energy X-ray source.

ZnO based nanowires grown by chemical vapour deposition for selective hydrogenation of acetylene alcohols

NARCIS (Netherlands)

Protasova, L.N.; Rebrov, E.; Choy, K.L.; Pung, S.Y.; Engels, V.; Cabaj, M.; Wheatley, A.E.H.; Schouten, J.C.

2011-01-01

Vertically aligned ZnO nanowires (NWs) with a length of 1.5–10 µm and a mean diameter of ca. 150 nm were grown by chemical vapour deposition onto a c-oriented ZnO seed layer which was deposited by atomic layer deposition on Si substrates. The substrates were then spin-coated with an ethanol solution

Influence of the Hydrothermal Method Growth Parameters on the Zinc Oxide Nanowires Deposited on Several Substrates

Directory of Open Access Journals (Sweden)

Concepción Mejía-García

2014-01-01

Full Text Available We report the synthesis of ZnO nanowires grown on several substrates (PET, glass, and Si using a two-step process: (a preparation of the seed layer on the substrate by spin coating, from solutions of zinc acetate dihydrate and 1-propanol, and (b growth of the ZnO nanostructures by dipping the substrate in an equimolar solution of zinc nitrate hexahydrate and hexamethylenetetramine. Subsequently, films were thermally treated with a commercial microwave oven (350 and 700 W for 5, 20, and 35 min. The ZnO nanowires obtained were characterized structurally, morphologically, and optically using XRD, SEM, and UV-VIS transmission, respectively. XRD patterns spectra revealed the presence of Zn(OH2 on the films grown on glass and Si substrates. A preferential orientation along c-axis directions for films grown on PET substrate was observed. An analysis by SEM revealed that the growth of the ZnO nanowires on PET and glass is better than the growth on Si when the same growth parameters are used. On glass substrates, ZnO nanowires less than 50 nm in diameter and between 200 nm and 1200 nm in length were obtained. The ZnO nanowires band gap energy for the films grown on PET and glass was obtained from optical transmission spectra.

Solution processed zinc oxide nanopyramid/silver nanowire transparent network films with highly tunable light scattering properties

KAUST Repository

Mehra, Saahil

2013-01-01

Metal nanowire transparent networks are promising replacements to indium tin oxide (ITO) transparent electrodes for optoelectronic devices. While the transparency and sheet resistance are key metrics for transparent electrode performance, independent control of the film light scattering properties is important to developing multifunctional electrodes for improved photovoltaic absorption. Here we show that controlled incorporation of ZnO nanopyramids into a metal nanowire network film affords independent, highly tunable control of the scattering properties (haze) with minimal effects on the transparency and sheet resistance. Varying the zinc oxide/silver nanostructure ratios prior to spray deposition results in sheet resistances, transmission (600 nm), and haze (600 nm) of 6-30 Ω □^-1, 68-86%, and 34-66%, respectively. Incorporation of zinc oxide nanopyramid scattering agents into the conducting nanowire mesh has a negligible effect on mesh connectivity, providing a straightforward method of controlling electrode scattering properties. The decoupling of the film scattering power and electrical characteristics makes these films promising candidates for highly scattering transparent electrodes in optoelectronic devices and can be generalized to other metal nanowire films as well as carbon nanotube transparent electrodes. © 2013 The Royal Society of Chemistry.

Growth of ZnO nanowire arrays directly onto Si via substrate topographical adjustments using both wet chemical and dry etching methods

Energy Technology Data Exchange (ETDEWEB)

Smith, Nathan A., E-mail: 523615@swansea.ac.uk [Centre for Nanohealth, Department of Physics, College of Science, University of Swansea, Singleton Park SA2 8PP United Kingdom (United Kingdom); Evans, Jon E.; Jones, Daniel R. [Multidisciplinary Nanotechnology Centre, College of Engineering, University of Swansea, Singleton Park, SA2 8PP United Kingdom (United Kingdom); Lord, Alex M. [Centre for Nanohealth, College of Engineering, University of Swansea, Singleton Park, SA2 8PP United Kingdom (United Kingdom); Wilks, S.P. [Centre for Nanohealth, Department of Physics, College of Science, University of Swansea, Singleton Park SA2 8PP United Kingdom (United Kingdom)

2015-03-15

Highlights: • Arrays of catalyst-free ZnO NWs have been grown by CVD without seed layers on Si. • Si surface topography was altered by substrate etching, resulting in NW growth. • XPS analysis shows growth is related to topography and not surface contamination. • Using e-beam lithography with etching, selective nanowire growth is demonstrated. • Electrical measurements on the arrays show improved conduction through the Si. - Abstract: Arrays of CVD catalyst-free ZnO nanowires have been successfully grown without the use of seed layers, using both wet chemical and dry plasma etching methods to alter surface topography. XPS analysis indicates that the NW growth cannot be attributed to a substrate surface chemistry and is therefore directly related to the substrate topography. These nanowires demonstrate structural and optical properties typical of CVD ZnO nanowires. Moreover, the NW arrays exhibit a degree of vertical alignment of less than 20° from the substrate normal. Electrical measurements suggest an improved conduction path through the substrate over seed layer grown nanowires. Furthermore, the etching technique was combined with e-beam lithography to produce high resolution selective area nanowire growth. The ability to pattern uniform nanowires using mature dry etch technology coupled with the increased charge transport through the substrate demonstrates the potential of this technique in the vertical integration of nanowire arrays.

First principles investigations on the electronic structure of anchor groups on ZnO nanowires and surfaces

International Nuclear Information System (INIS)

Dominguez, A.; Lorke, M.; Rosa, A. L.; Frauenheim, Th.; Schoenhalz, A. L.; Dalpian, G. M.; Rocha, A. R.

2014-01-01

We report on density functional theory investigations of the electronic properties of monofunctional ligands adsorbed on ZnO-(1010) surfaces and ZnO nanowires using semi-local and hybrid exchange-correlation functionals. We consider three anchor groups, namely thiol, amino, and carboxyl groups. Our results indicate that neither the carboxyl nor the amino group modify the transport and conductivity properties of ZnO. In contrast, the modification of the ZnO surface and nanostructure with thiol leads to insertion of molecular states in the band gap, thus suggesting that functionalization with this moiety may customize the optical properties of ZnO nanomaterials.

Increased short circuit current in organic photovoltaic using high-surface area electrode based on ZnO nanowires decorated with CdTe quantum dots.

Science.gov (United States)

Aga, R S; Gunther, D; Ueda, A; Pan, Z; Collins, W E; Mu, R; Singer, K D

2009-11-18

A photosensitized high-surface area transparent electrode has been employed to increase the short circuit current of a photovoltaic device with a blend of poly(3-hexylthiophene) (P3HT) and (6,6)-phenyl C61 butyric acid methyl ester (PCBM) as the active layer. This is achieved by directly growing ZnO nanowires on indium tin oxide (ITO) film via a physical vapor method. The nanowire surface is then decorated with CdTe quantum dots by pulsed electron-beam deposition (PED). The nanowires alone provided a 20-fold increase in the short circuit current under visible light illumination. This was further increased by a factor of approximately 1.5 by the photosensitization effect of CdTe, which has an optical absorption of up to 820 nm.

Direct-write fabrication of a nanoscale digital logic element on a single nanowire

International Nuclear Information System (INIS)

Roy, Somenath; Gao Zhiqiang

2010-01-01

In this paper we report on the 'direct-write' fabrication and electrical characteristics of a nanoscale logic inverter, integrating enhancement-mode (E-mode) and depletion-mode (D-mode) field-effect transistors (FETs) on a single zinc oxide (ZnO) nanowire. 'Direct-writing' of platinum metal electrodes and a dielectric layer is executed on individual single-crystalline ZnO nanowires using either a focused electron beam (FEB) or a focused ion beam (FIB). We fabricate a top-gate FET structure, in which the gate electrode wraps around the ZnO nanowire, resulting in a more efficient gate response than the conventional back-gate nanowire transistors. For E-mode device operation, the gate electrode (platinum) is deposited directly onto the ZnO nanowire by a FEB, which creates a Schottky barrier and in turn a fully depleted channel. Conversely, sandwiching an insulating layer between the FIB-deposited gate electrode and the nanowire channel makes D-mode operation possible. Integrated E- and D-mode FETs on a single nanowire exhibit the characteristics of a direct-coupled FET logic (DCFL) inverter with a high gain and noise margin.

A ZnO nanowire-based photo-inverter with pulse-induced fast recovery.

Science.gov (United States)

Raza, Syed Raza Ali; Lee, Young Tack; Hosseini Shokouh, Seyed Hossein; Ha, Ryong; Choi, Heon-Jin; Im, Seongil

2013-11-21

We demonstrate a fast response photo-inverter comprised of one transparent gated ZnO nanowire field-effect transistor (FET) and one opaque FET respectively as the driver and load. Under ultraviolet (UV) light the transfer curve of the transparent gate FET shifts to the negative side and so does the voltage transfer curve (VTC) of the inverter. After termination of UV exposure the recovery of photo-induced current takes a long time in general. This persistent photoconductivity (PPC) is due to hole trapping on the surface of ZnO NWs. Here, we used a positive voltage short pulse after UV exposure, for the first time resolving the PPC issue in nanowire-based photo-detectors by accumulating electrons at the ZnO/dielectric interface. We found that a pulse duration as small as 200 ns was sufficient to reach a full recovery to the dark state from the UV induced state, realizing a fast UV detector with a voltage output.

Low-Cost and High-Productivity Three-Dimensional Nanocapacitors Based on Stand-Up ZnO Nanowires for Energy Storage.

Science.gov (United States)

Wei, Lei; Liu, Qi-Xuan; Zhu, Bao; Liu, Wen-Jun; Ding, Shi-Jin; Lu, Hong-Liang; Jiang, Anquan; Zhang, David Wei

2016-12-01

Highly powered electrostatic capacitors based on nanostructures with a high aspect ratio are becoming critical for advanced energy storage technology because of their high burst power and energy storage capability. We report the fabrication process and the electrical characteristics of high capacitance density capacitors with three-dimensional solid-state nanocapacitors based on a ZnO nanowire template. Stand-up ZnO nanowires are grown face down on p-type Si substrates coated with a ZnO seed layer using a hydrothermal method. Stacks of AlZnO/Al2O3/AlZnO are then deposited sequentially on the ZnO nanowires using atomic layer deposition. The fabricated capacitor has a high capacitance density up to 92 fF/μm(2) at 1 kHz (around ten times that of the planar capacitor without nanowires) and an extremely low leakage current density of 3.4 × 10(-8) A/cm(2) at 2 V for a 5-nm Al2O3 dielectric. Additionally, the charge-discharge characteristics of the capacitor were investigated, indicating that the resistance-capacitance time constants were 550 ns for both the charging and discharging processes and the time constant was not dependent on the voltage. This reflects good power characteristics of the fabricated capacitors. Therefore, the current work provides an exciting strategy to fabricate low-cost and easily processable, high capacitance density capacitors for energy storage.

Size-controlled growth of ZnO nanowires by catalyst-free high-pressure pulsed laser deposition and their optical properties

Directory of Open Access Journals (Sweden)

W. Z. Liu

2011-06-01

Full Text Available Single crystalline ZnO nanowires were fabricated on Si (100 substrates by catalyst-free high-pressure pulsed laser deposition. It is found that the nanowires start to form when the substrate temperature and growth pressure exceed the critical values of 700 oC and 700 Pa, and their size strongly depends on these growth conditions. That is, the aspect ratio of the nanowires decreases with increasing temperature or decreasing pressure. Such a size dependence on growth conditions was discussed in terms of surface migration and scattering of ablated atoms. Room-temperature photoluminescence spectrum of ZnO nanowires shows a dominant near-band-edge emission peak at 3.28 eV and a visible emission band centered at 2.39 eV. Temperature-dependent photoluminescence studies reveal that the former consists of the acceptor-bound exciton and free exciton emissions; while the latter varies in intensity with the aspect ratio of the nanowires and is attributed to the surface-mediated deep level emission.

The effects of electron-hole separation on the photoconductivity of individual metal oxide nanowires

International Nuclear Information System (INIS)

Prades, J D; Hernandez-Ramirez, F; Jimenez-Diaz, R; Manzanares, M; Andreu, T; Cirera, A; Romano-Rodriguez, A; Morante, J R

2008-01-01

The responses of individual ZnO nanowires to UV light demonstrate that the persistent photoconductivity (PPC) state is directly related to the electron-hole separation near the surface. Our results demonstrate that the electrical transport in these nanomaterials is influenced by the surface in two different ways. On the one hand, the effective mobility and the density of free carriers are determined by recombination mechanisms assisted by the oxidizing molecules in air. This phenomenon can also be blocked by surface passivation. On the other hand, the surface built-in potential separates the photogenerated electron-hole pairs and accumulates holes at the surface. After illumination, the charge separation makes the electron-hole recombination difficult and originates PPC. This effect is quickly reverted after increasing either the probing current (self-heating by Joule dissipation) or the oxygen content in air (favouring the surface recombination mechanisms). The model for PPC in individual nanowires presented here illustrates the intrinsic potential of metal oxide nanowires to develop optoelectronic devices or optochemical sensors with better and new performances.

Low temperature preparation of Ag-doped ZnO nanowire arrays for sensor and light-emitting diode applications

Science.gov (United States)

Lupan, O.; Viana, B.; Cretu, V.; Postica, V.; Adelung, R.; Pauporté, T.

2016-02-01

Transition metal doped-oxide semiconductor nanostructures are important to achieve enhanced and new properties for advanced applications. We describe the low temperature preparation of ZnO:Ag nanowire/nanorod (NW/NR) arrays by electrodeposition at 90 °C. The NWs have been characterized by SEM, EDX, transmittance and photoluminescence (PL) measurements. The integration of Ag in the crystal is shown. Single nanowire/nanorod of ZnO:Ag was integrated in a nanosensor structure leading to new and enhanced properties. The ultraviolet (UV) response of the nanosensor was investigated at room temperature. Experimental results indicate that ZnO:Ag (0.75 μM) nanosensor possesses faster response/recovery time and better response to UV light than those reported in literature. The sensor structure has been also shown to give a fast response for the hydrogen detection with improved performances compared to pristine ZnO NWs. ZnO:Ag nanowire/nanorod arrays electrochemically grown on p-type GaN single crystal layer is also shown to act as light emitter in LED structures. The emission wavelength is red-shifted compared to pristine ZnO NW array. At low Ag concentration a single UV-blue emission is found whereas at higher concentration of dopant the emission is broadened and extends up to the red wavelength range. Our study indicates that high quality ZnO:Ag NW/NR prepared at low temperature by electrodeposition can serve as building nanomaterials for new sensors and light emitting diodes (LEDs) structures with low-power consumption.

Sponge-Templated Macroporous Graphene Network for Piezoelectric ZnO Nanogenerator.

Science.gov (United States)

Li, Xinda; Chen, Yi; Kumar, Amit; Mahmoud, Ahmed; Nychka, John A; Chung, Hyun-Joong

2015-09-23

We report a simple approach to fabricate zinc oxide (ZnO) nanowire based electricity generators on three-dimensional (3D) graphene networks by utilizing a commercial polyurethane (PU) sponge as a structural template. Here, a 3D network of graphene oxide is deposited from solution on the template and then is chemically reduced. Following steps of ZnO nanowire growth, polydimethylsiloxane (PDMS) backfilling and electrode lamination completes the fabrication processes. When compared to conventional generators with 2D planar geometry, the sponge template provides a 3D structure that has a potential to increase power density per unit area. The modified one-pot ZnO synthesis method allows the whole process to be inexpensive and environmentally benign. The nanogenerator yields an open circuit voltage of ∼0.5 V and short circuit current density of ∼2 μA/cm(2), while the output was found to be consistent after ∼3000 cycles. Finite element analysis of stress distribution showed that external stress is concentrated to deform ZnO nanowires by orders of magnitude compared to surrounding PU and PDMS, in agreement with our experiment. It is shown that the backfilled PDMS plays a crucial role for the stress concentration, which leads to an efficient electricity generation.

Hierarchical ZnO Nanowires-loaded Sb-doped SnO2-ZnO Micrograting Pattern via Direct Imprinting-assisted Hydrothermal Growth and Its Selective Detection of Acetone Molecules

Science.gov (United States)

Choi, Hak-Jong; Choi, Seon-Jin; Choo, Soyoung; Kim, Il-Doo; Lee, Heon

2016-01-01

We propose a novel synthetic route by combining imprinting transfer of a Sb-doped SnO2 (ATO)-ZnO composite micrograting pattern (MP), i.e., microstrip lines, on a sensor substrate and subsequent hydrothermal growth of ZnO nanowires (NWs) for producing a hierarchical ZnO NW-loaded ATO-ZnO MP as an improved chemo-resistive sensing layer. Here, ATO-ZnO MP structure with 3-μm line width, 9-μm pitch, and 6-μm height was fabricated by direct transfer of mixed ATO and ZnO nanoparticle (NP)-dispersed resists, which are pre-patterned on a polydimethylsiloxane (PDMS) mold. ZnO NWs with an average diameter of less than 50 nm and a height of 250 nm were quasi-vertically grown on the ATO-ZnO MP, leading to markedly enhanced surface area and heterojunction composites between each ATO NP, ZnO NP, and ZnO NW. A ZnO NW-loaded MP sensor with a relative ratio of 1:9 between ATO and ZnO (1:9 ATO-ZnO), exhibited highly sensitive and selective acetone sensing performance with 2.84-fold higher response (Rair/Rgas = 12.8) compared to that (Rair/Rgas = 4.5) of pristine 1:9 ATO-ZnO MP sensor at 5 ppm. Our results demonstrate the processing advantages of direct imprinting-assisted hydrothermal growth for large-scale homogeneous coating of hierarchical oxide layers, particularly for applications in highly sensitive and selective chemical sensors.

Synthesis of Oxidation-Resistant Cupronickel Nanowires for Transparent Conducting Nanowire Networks

Energy Technology Data Exchange (ETDEWEB)

Rathmall, Aaron [Duke University; Nguyen, Minh [Duke University; Wiley, Benjamin J [Duke University

2012-01-01

Nanowires of copper can be coated from liquids to create flexible, transparent conducting films that can potentially replace the dominant transparent conductor, indium tin oxide, in displays, solar cells, organic light-emitting diodes, and electrochromic windows. One issue with these nanowire films is that copper is prone to oxidation. It was hypothesized that the resistance to oxidation could be improved by coating copper nanowires with nickel. This work demonstrates a method for synthesizing copper nanowires with nickel shells as well as the properties of cupronickel nanowires in transparent conducting films. Time- and temperature-dependent sheet resistance measurements indicate that the sheet resistance of copper and silver nanowire films will double after 3 and 36 months at room temperature, respectively. In contrast, the sheet resistance of cupronickel nanowires containing 20 mol % nickel will double in about 400 years. Coating copper nanowires to a ratio of 2:1 Cu:Ni gave them a neutral gray color, making them more suitable for use in displays and electrochromic windows. These properties, and the fact that copper and nickel are 1000 times more abundant than indium or silver, make cupronickel nanowires a promising alternative for the sustainable, efficient production of transparent conductors.

Magnetoresistance manipulation and sign reversal in Mn-doped ZnO nanowires.

Science.gov (United States)

Sapkota, Keshab R; Chen, Weimin; Maloney, F Scott; Poudyal, Uma; Wang, Wenyong

2016-10-14

We report magnetoresistance (MR) manipulation and sign reversal induced by carrier concentration modulation in Mn-doped ZnO nanowires. At low temperatures positive magnetoresistance was initially observed. When the carrier concentration was increased through the application of a gate voltage, the magnetoresistance also increased and reached a maximum value. However, further increasing the carrier concentration caused the MR to decrease, and eventually an MR sign reversal from positive to negative was observed. An MR change from a maximum positive value of 25% to a minimum negative value of 7% was observed at 5 K and 50 KOe. The observed MR behavior was modeled by considering combined effects of quantum correction to carrier conductivity and bound magnetic polarons. This work could provide important insights into the mechanisms that govern magnetotransport in dilute magnetic oxides, and it also demonstrated an effective approach to manipulating magnetoresistance in these materials that have important spintronic applications.

Mechanisms involved in the hydrothermal growth of ultra-thin and high aspect ratio ZnO nanowires

Science.gov (United States)

Demes, Thomas; Ternon, Céline; Morisot, Fanny; Riassetto, David; Legallais, Maxime; Roussel, Hervé; Langlet, Michel

2017-07-01

Hydrothermal synthesis of ZnO nanowires (NWs) with tailored dimensions, notably high aspect ratios (AR) and small diameters, is a major concern for a wide range of applications and still represents a challenging and recurring issue. In this work, an additive-free and reproducible hydrothermal procedure has been developed to grow ultra-thin and high AR ZnO NWs on sol-gel deposited ZnO seed layers. Controlling the substrate temperature and using a low reagent concentration (1 mM) has been found to be essential for obtaining such NWs. We show that the NW diameter remains constant at about 20-25 nm with growth time contrary to the NW length that can be selectively increased leading to NWs with ARs up to 400. On the basis of investigated experimental conditions along with thermodynamic and kinetic considerations, a ZnO NW growth mechanism has been developed which involves the formation and growth of nuclei followed by NW growth when the nuclei reach a critical size of about 20-25 nm. The low reagent concentration inhibits NW lateral growth leading to ultra-thin and high AR NWs. These NWs have been assembled into electrically conductive ZnO nanowire networks, which opens attractive perspectives toward the development of highly sensitive low-cost gas- or bio-sensors.

Growth and Transfer of Monolithic Horizontal ZnO Nanowire Superstructures onto Flexible Substrates

KAUST Repository

Xu, Sheng

2010-04-28

A method of fabricating horizontally aligned ZnO nanowire (NW) arrays with full control over the width and length is demonstrated. A cross-sectional view of the NWs by transmission electron microscopy shows a "mushroom-like" structure. Novel monolithic multisegment superstructures are fabricated by making use of the lateral overgrowth. Ultralong horizontal ZnO NWs of an aspect ratio on the order often thousand are also demonstrated. These horizontal NWs are lifted off and transferred onto a flexible polymer substrate, which may have many great applications in horizontal ZnO NW-based nanosensor arrays, light-emitting diodes, optical gratings, integrated circuit interconnects, and high-output-power alternating-current nanogenerators. © 2010 WILEY-VCH Verlag GmbH & Co. KGaA.

Passivation of ZnO Nanowire Guests and 3D Inverse Opal Host Photoanodes for Dye-Sensitized Solar Cells

KAUST Repository

Labouchere, Philippe; Chandiran, Aravind Kumar; Moehl, Thomas; Harms, Hauke; Chavhan, Sudam; Tena-Zaera, Ramon; Nazeeruddin, Mohammad Khaja; Graetzel, Michael; Tetreault, Nicolas

2014-01-01

A hierarchical host-guest nanostructured photoanode is reported for dye-sensitized solar cells. It is composed of ZnO nanowires grown in situ into the macropores of a 3D ZnO inverse opal structure, which acts both as a seed layer and as a conductive

Design Concepts, Fabrication and Advanced Characterization Methods of Innovative Piezoelectric Sensors Based on ZnO Nanowires

Directory of Open Access Journals (Sweden)

Rodolfo Araneo

2014-12-01

Full Text Available Micro- and nano-scale materials and systems based on zinc oxide are expected to explode in their applications in the electronics and photonics, including nano-arrays of addressable optoelectronic devices and sensors, due to their outstanding properties, including semiconductivity and the presence of a direct bandgap, piezoelectricity, pyroelectricity and biocompatibility. Most applications are based on the cooperative and average response of a large number of ZnO micro/nanostructures. However, in order to assess the quality of the materials and their performance, it is fundamental to characterize and then accurately model the specific electrical and piezoelectric properties of single ZnO structures. In this paper, we report on focused ion beam machined high aspect ratio nanowires and their mechanical and electrical (by means of conductive atomic force microscopy characterization. Then, we investigate the suitability of new power-law design concepts to accurately model the relevant electrical and mechanical size-effects, whose existence has been emphasized in recent reviews.

Doping of ZnO nanowires using phosphorus diffusion from a spin-on doped glass source

International Nuclear Information System (INIS)

Bocheux, A.; Robin, I. C.; Bonaimé, J.; Hyot, B.; Feuillet, G.; Kolobov, A. V.; Fons, P.; Mitrofanov, K. V.; Tominaga, J.; Tamenori, Y.

2014-01-01

In this article, we report on ZnO nanowires that were phosphorus doped using a spin on dopant glass deposition and diffusion method. Photoluminescence measurements suggest that this process yields p-doped ZnO. The spatial location of P atoms was studied using x-ray near-edge absorption structure spectroscopy and it is concluded that the doping is amphoteric with P atoms located on both Zn and O sites

Wafer-Scale High-Throughput Ordered Growth of Vertically Aligned ZnO Nanowire Arrays

KAUST Repository

Wei, Yaguang

2010-09-08

This article presents an effective approach for patterned growth of vertically aligned ZnO nanowire (NW) arrays with high throughput and low cost at wafer scale without using cleanroom technology. Periodic hole patterns are generated using laser interference lithography on substrates coated with the photoresist SU-8. ZnO NWs are selectively grown through the holes via a low-temperature hydrothermal method without using a catalyst and with a superior control over orientation, location/density, and as-synthesized morphology. The development of textured ZnO seed layers for replacing single crystalline GaN and ZnO substrates extends the large-scale fabrication of vertically aligned ZnO NW arrays on substrates of other materials, such as polymers, Si, and glass. This combined approach demonstrates a novel method of manufacturing large-scale patterned one-dimensional nanostructures on various substrates for applications in energy harvesting, sensing, optoelectronics, and electronic devices. © 2010 American Chemical Society.

Temperature-dependent photoluminescence analysis of ZnO nanowire array annealed in air

Science.gov (United States)

Sun, Yanan; Gu, Xiuquan; Zhao, Yulong; Wang, Linmeng; Qiang, Yinghuai

2018-05-01

ZnO nanowire arrays (NWAs) were prepared on transparent conducting fluorine doped tin oxide (FTO) substrates through a facile hydrothermal method, followed by a 500 °C annealing to improve their crystalline qualities and photoelectrochemical (PEC) activities. It was found that the annealing didn't change the morphology, but resulted in a significant reduction of the donor concentration. Temperature-dependent photoluminescence (PL) was carried out for a comprehensive analysis of the effect from annealing. Noteworthy, four dominant peaks were identified from the 10 K spectrum of a 500 °C annealed sample, and they were assigned to FX, D0X, (e, D0) and (e, D0) -1LO, respectively. Of them, the FX emission was only existed below 130 K, while the room-temperature (RT) PL spectrum was dominated by the D0X emission.

Penetration length-dependent hot electrons in the field emission from ZnO nanowires

Science.gov (United States)

Chen, Yicong; Song, Xiaomeng; Li, Zhibing; She, Juncong; Deng, Shaozhi; Xu, Ningsheng; Chen, Jun

2018-01-01

In the framework of field emission, whether or not hot electrons can form in the semiconductor emitters under a surface penetration field is of great concern, which will provide not only a comprehensive physical picture of field emission from semiconductor but also guidance on how to improve device performance. However, apart from some theoretical work, its experimental evidence has not been reported yet. In this article, the field penetration length-dependent hot electrons were observed in the field emission of ZnO nanowires through the in-situ study of its electrical and field emission characteristic before and after NH3 plasma treatment in an ultrahigh vacuum system. After the treatment, most of the nanowires have an increased carrier density but reduced field emission current. The raised carrier density was caused by the increased content of oxygen vacancies, while the degraded field emission current was attributed to the lower kinetic energy of hot electrons caused by the shorter penetration length. All of these results suggest that the field emission properties of ZnO nanowires can be optimized by modifying their carrier density to balance both the kinetic energy of field induced hot electrons and the limitation of saturated current under a given field.

Luminescence property and large-scale production of ZnO nanowires by current heating deposition

International Nuclear Information System (INIS)

Singjai, P.; Jintakosol, T.; Singkarat, S.; Choopun, S.

2007-01-01

Large-scale production for ZnO nanowires has been demonstrated by current heating deposition. Based on the use of a solid-vapor phase carbothermal sublimation technique, a ZnO-graphite mixed rod was placed between two copper bars and gradually heated by passing current through it under constant flowing of argon gas at atmospheric pressure. The product seen as white films deposited on the rod surface was separated for further characterizations. The results have shown mainly comb-like structures of ZnO nanowires in diameter ranging from 50 to 200 nm and length up to several tens micrometers. From optical testing, ionoluminescence spectra of as-grown and annealed samples have shown high green emission intensities centered at 510 nm. In contrast, the small UV peak centered at 390 nm was observed clearly in the as-grown sample which almost disappeared after the annealing treatment

ZnO Nanostructures for Tissue Engineering Applications

Directory of Open Access Journals (Sweden)

Marco Laurenti

2017-11-01

Full Text Available This review focuses on the most recent applications of zinc oxide (ZnO nanostructures for tissue engineering. ZnO is one of the most investigated metal oxides, thanks to its multifunctional properties coupled with the ease of preparing various morphologies, such as nanowires, nanorods, and nanoparticles. Most ZnO applications are based on its semiconducting, catalytic and piezoelectric properties. However, several works have highlighted that ZnO nanostructures may successfully promote the growth, proliferation and differentiation of several cell lines, in combination with the rise of promising antibacterial activities. In particular, osteogenesis and angiogenesis have been effectively demonstrated in numerous cases. Such peculiarities have been observed both for pure nanostructured ZnO scaffolds as well as for three-dimensional ZnO-based hybrid composite scaffolds, fabricated by additive manufacturing technologies. Therefore, all these findings suggest that ZnO nanostructures represent a powerful tool in promoting the acceleration of diverse biological processes, finally leading to the formation of new living tissue useful for organ repair.

A generic approach for vertical integration of nanowires

International Nuclear Information System (INIS)

Latu-Romain, E; Gilet, P; Noel, P; Garcia, J; Ferret, P; Rosina, M; Feuillet, G; Levy, F; Chelnokov, A

2008-01-01

We report on the collective integration technology of vertically aligned nanowires (NWs). Si and ZnO NWs have been used in order to develop a generic technological process. Both mineral and organic planarizations of the as-grown nanowires have been achieved. Chemical vapour deposition (CVD) oxides, spin on glass (SOG), and polymer have been investigated as filling materials. Polishing and/or etching of the composite structures have been set up so as to obtain a suitable morphology for the top and bottom electrical contacts. Electrical and optical characterizations of the integrated NWs have been performed. Contacts ohmicity has been demonstrated and specific contact resistances have been reported. The photoconducting properties of polymer-integrated ZnO NWs have also been investigated in the UV-visible range through collective electrical contacts. A small increase of the resistivity in the ZnO NWs under sub-bandgap illumination has been observed and discussed. A comparison of the photoluminescence (PL) spectra at 300 K of the as-grown and SOG-integrated ZnO nanowires has shown no significant impact of the integration process on the crystal quality of the NWs

A generic approach for vertical integration of nanowires

Energy Technology Data Exchange (ETDEWEB)

Latu-Romain, E; Gilet, P; Noel, P; Garcia, J; Ferret, P; Rosina, M; Feuillet, G; Levy, F; Chelnokov, A [CEA-LETI, MINATEC, 17 rue des Martyrs, Grenoble (France)

2008-08-27

We report on the collective integration technology of vertically aligned nanowires (NWs). Si and ZnO NWs have been used in order to develop a generic technological process. Both mineral and organic planarizations of the as-grown nanowires have been achieved. Chemical vapour deposition (CVD) oxides, spin on glass (SOG), and polymer have been investigated as filling materials. Polishing and/or etching of the composite structures have been set up so as to obtain a suitable morphology for the top and bottom electrical contacts. Electrical and optical characterizations of the integrated NWs have been performed. Contacts ohmicity has been demonstrated and specific contact resistances have been reported. The photoconducting properties of polymer-integrated ZnO NWs have also been investigated in the UV-visible range through collective electrical contacts. A small increase of the resistivity in the ZnO NWs under sub-bandgap illumination has been observed and discussed. A comparison of the photoluminescence (PL) spectra at 300 K of the as-grown and SOG-integrated ZnO nanowires has shown no significant impact of the integration process on the crystal quality of the NWs.

A generic approach for vertical integration of nanowires.

Science.gov (United States)

Latu-Romain, E; Gilet, P; Noel, P; Garcia, J; Ferret, P; Rosina, M; Feuillet, G; Lévy, F; Chelnokov, A

2008-08-27

We report on the collective integration technology of vertically aligned nanowires (NWs). Si and ZnO NWs have been used in order to develop a generic technological process. Both mineral and organic planarizations of the as-grown nanowires have been achieved. Chemical vapour deposition (CVD) oxides, spin on glass (SOG), and polymer have been investigated as filling materials. Polishing and/or etching of the composite structures have been set up so as to obtain a suitable morphology for the top and bottom electrical contacts. Electrical and optical characterizations of the integrated NWs have been performed. Contacts ohmicity has been demonstrated and specific contact resistances have been reported. The photoconducting properties of polymer-integrated ZnO NWs have also been investigated in the UV-visible range through collective electrical contacts. A small increase of the resistivity in the ZnO NWs under sub-bandgap illumination has been observed and discussed. A comparison of the photoluminescence (PL) spectra at 300 K of the as-grown and SOG-integrated ZnO nanowires has shown no significant impact of the integration process on the crystal quality of the NWs.

Anodized ZnO nanostructures for photoelectrochemical water splitting

Energy Technology Data Exchange (ETDEWEB)

Huang, Mao-Chia [Institute of Materials Science and Engineering, National Central University, Taoyuan 32001, Taiwan (China); Wang, TsingHai [Department of Biomedical Engineering and Environment Sciences, National Tsing Hua University, Hsinchu 30013, Taiwan (China); Wu, Bin-Jui [Institute of Materials Science and Engineering, National Central University, Taoyuan 32001, Taiwan (China); Lin, Jing-Chie, E-mail: jclin4046@gmail.com [Institute of Materials Science and Engineering, National Central University, Taoyuan 32001, Taiwan (China); Wu, Ching-Chen [Green Energy and Environment Research Laboratories, Industrial Technology Research Institute, Hsinchu 310, Taiwan (China)

2016-01-01

Highlights: • ZnO nanostructures were synthesized by electrochemical anodic process. • The parameter of ZnO nanostructure was anodic potential. • The model of growth of ZnO nanostructure was investigated. - Abstract: Zinc oxide (ZnO) nanostructures were fabricated on the polished zinc foil by anodic deposition in an alkaline solution containing 1.0 M NaOH and 0.25 M Zn(NO{sub 3}){sub 2}. Potentiostatic anodization was conducted at two potentials (−0.7 V in the passive region and −1.0 V in the active region vs. SCE) which are higher than the open circuit potential (−1.03 V vs. SCE) and as-obtained ZnO nanostrcutures were investigated focusing on their structural, optical, electrical and photoelectrochemical (PEC) characteristics. All samples were confirmed ZnO by X-ray photoelectron spectroscopy and Raman spectra. Observations in the SEM images clearly showed that ZnO nanostructures prepared at −0.7 V vs. SCE were composed of nanowires at while those obtained at −1.0 V vs. SCE possessed nanosheets morphology. Result from transmission electron microscope and X-ray diffraction patterns suggested that the ZnO nanowires belonged to single crystalline with a preferred orientation of (0 0 2) whereas the ZnO nanosheets were polycrystalline. Following PEC experiments indicated that ZnO nanowires had higher photocurrent density of 0.32 mA/cm{sup 2} at 0.5 V vs. SCE under 100 mW/cm{sup 2} illumination. This value was about 1.9 times higher than that of ZnO nanosheets. Observed higher photocurrent was likely due to the single crystalline, preferred (0 0 2) orientation, higher carrier concentration and lower charge transfer resistance.

Optimization of CVD parameters for long ZnO NWs grown on ITO

Indian Academy of Sciences (India)

The optimization of chemical vapour deposition (CVD) parameters for long and vertically aligned (VA) ZnO nanowires (NWs) were investigated. Typical ZnO NWs as a single crystal grown on indium tin oxide (ITO)-coated glass substrate were successfully synthesized. First, the conducted side of ITO–glass substrate was ...

Growth and characterization of ZnO nanowires for optical applications

International Nuclear Information System (INIS)

AlSalhi, M S; Atif, M; Ansari, A A; Khun, K; Ibupoto, Z H; Willander, M

2013-01-01

In the present work, cerium oxide CeO 2 nanoparticles were synthesized by the sol–gel method and used for the growth of ZnO nanorods. The synthesized nanoparticles were studied by x-ray diffraction (XRD) and Raman spectroscopic techniques. Furthermore, these nanoparticles were used as the seed layer for the growth of ZnO nanorods by following the hydrothermal growth method. The structural study of ZnO nanorods was carried out by means of field emission scanning electron microscopy (FESEM), high-resolution transmission electron microscopy (HRTEM) and XRD techniques. This study demonstrated that the grown ZnO nanorods are well aligned, uniform, of good crystal quality and have diameters of less than 200 nm. Energy dispersive x-ray (EDX) analysis revealed that the ZnO nanorods are composed only of zinc, cerium as the seed atom, and oxygen atoms, with no other impurities in the grown nanorods. Moreover, a photoluminescence (PL) approach was applied for the optical characterization, and it was observed that the near-band-edge (NBE) emission was the same as that of the zinc acetate seed layer, however the green and orange/red emission peaks were slightly raised due to possibly higher levels of defects in the cerium oxide seeded ZnO nanorods. This study provides an alternative approach for the controlled synthesis of ZnO nanorods using cerium oxide nanoparticles as the seed nucleation layer, improving both the morphology of the nanorods and the performance of devices based upon them. (paper)

Synthesis and electrical characterization of tungsten oxide nanowires

Institute of Scientific and Technical Information of China (English)

Huang Rui; Zhu Jing; Yu Rong

2009-01-01

Tungsten oxide nanowires of diameters ranging from 7 to 200 nm are prepared on a tungsten rod substrate by using the chemical vapour deposition (CVD) method with vapour-solid (VS) mechanism. Tin powders are used to control oxygen concentration in the furnace, thereby assisting the growth of the tungsten oxide nanowires. The grown tungsten oxide nanowires are determined to be of crystalline W18O49. Ⅰ-Ⅴ curves are measured by an in situ transmission electron microscope (TEM) to investigate the electrical properties of the nanowires. All of the Ⅰ-Ⅴ curves observed are symmetric, which reveals that the tungsten oxide nanowires are semiconducting. Quantitative analyses of the experimental I V curves by using a metal-semiconductor-metal (MSM) model give some intrinsic parameters of the tungsten oxide nanowires, such as the carrier concentration, the carrier mobility and the conductivity.

Zinc Oxide Nanowire Interphase for Enhanced Lightweight Polymer Fiber Composites

Science.gov (United States)

Sodano, Henry A.; Brett, Robert

2011-01-01

The objective of this work was to increase the interfacial strength between aramid fiber and epoxy matrix. This was achieved by functionalizing the aramid fiber followed by growth of a layer of ZnO nanowires on the fiber surface such that when embedded into the polymer, the load transfer and bonding area could be substantially enhanced. The functionalization procedure developed here created functional carboxylic acid surface groups that chemically interact with the ZnO and thus greatly enhance the strength of the interface between the fiber and the ZnO.

Sonochemical synthesis and optical properties of amorphous ZnO nanowires

International Nuclear Information System (INIS)

Zhou Shaomin; Yuan Ruijian; Lou Shiyun; Wang Yongqiang; Yuan Honglei; Zhu Gongyu; Liu Lisheng; Hao Yaoming; Li Ning

2011-01-01

Large-scale amorphous wire-like ZnO nanostructures were prepared by ultrasonic spray pyrolysis Zn(CO) 5 without involvement of any template or patterned catalyst. The as-obtained amorphous ZnO nanowires were characterized using scanning/transmission electron microscopy, X-ray diffraction/photoelectron spectroscopy, energy-dispersed X-ray spectrometry, selected area electronic diffraction, and high-resolution transmission electron microscopy. The results reveal the as-made noncrystalline samples are about 30–60 nm in diameter and several tens of microns in length and the growth mechanism is tentatively proposed as the self-assembly soft template mechanism. The photoluminescence spectra in all of the as-studied specimens exhibit one wide visible emission peak in about 508 nm. The corresponding PL intensity greatly increased with an annealing temperature, which has an application for a high efficiency vacuum fluorescent displays and a low-voltage phosphor.

Dimensional effects in semiconductor nanowires; Dimensionseffekte in Halbleiternanodraehten

Energy Technology Data Exchange (ETDEWEB)

Stichtenoth, Daniel

2008-06-23

Nanomaterials show new physical properties, which are determined by their size and morphology. These new properties can be ascribed to the higher surface to volume ratio, to quantum size effects or to a form anisotropy. They may enable new technologies. The nanowires studied in this work have a diameter of 4 to 400 nm and a length up to 100 {mu}m. The semiconductor material used is mainly zinc oxide (ZnO), zinc sulfide (ZnS) and gallium arsenide (GaAs). All nanowires were synthesized according to the vapor liquid solid mechanism, which was originally postulated for the growth of silicon whiskers. Respective modifications for the growth of compound semiconductor nanowires are discussed. Detailed luminescence studies on ZnO nanowires with different diameters show pronounced size effects which can be attributed to the origins given above. Similar to bulk material, a tuning of the material properties is often essential for a further functionalization of the nanowires. This is typical realized by doping the source material. It becomes apparent, that a controlled doping of nanowires during the growth process is not successful. Here an alternative method is chosen: the doping after the growth by ion implantation. However, the doping by ion implantation goes always along with the creation of crystal defects. The defects have to be annihilated in order to reach an activation of th introduced dopants. At high ion fluences and ion masses the sputtering of surface atoms becomes more important. This results in a characteristic change in the morphology of the nanowires. In detail, the doping of ZnO and ZnS nanowires with color centers (manganese and rare earth elements) is demonstrated. Especially, the intra 3d luminescence of manganese implanted ZnS nanostructures shows a strong dependence of the nanowire diameter and morphology. This dependence can be described by expanding Foersters model (which describes an energy transfer to the color centers) by a dimensional parameter

Fe2 PO5 -Encapsulated Reverse Energetic ZnO/Fe2 O3 Heterojunction Nanowire for Enhanced Photoelectrochemical Oxidation of Water.

Science.gov (United States)

Qin, Dong-Dong; He, Cai-Hua; Li, Yang; Trammel, Antonio C; Gu, Jing; Chen, Jing; Yan, Yong; Shan, Duo-Liang; Wang, Qiu-Hong; Quan, Jing-Jing; Tao, Chun-Lan; Lu, Xiao-Quan

2017-07-10

Zinc oxide is regarded as a promising candidate for application in photoelectrochemical water oxidation due to its higher electron mobility. However, its instability under alkaline conditions limits its application in a practical setting. Herein, we demonstrate an easily achieved wet-chemical route to chemically stabilize ZnO nanowires (NWs) by protecting them with a thin layer Fe 2 O 3 shell. This shell, in which the thickness can be tuned by varying reaction times, forms an intact interface with ZnO NWs, thus protecting ZnO from corrosion in a basic solution. The reverse energetic heterojunction nanowires are subsequently activated by introducing an amorphous iron phosphate, which substantially suppressed surface recombination as a passivation layer and improved photoelectrochemical performance as a potential catalyst. Compared with pure ZnO NWs (0.4 mA cm -2 ), a maximal photocurrent of 1.0 mA cm -2 is achieved with ZnO/Fe 2 O 3 core-shell NWs and 2.3 mA cm -2 was achieved for the PH 3 -treated NWs at 1.23 V versus RHE. The PH 3 low-temperature treatment creates a dual function, passivation and catalyst layer (Fe 2 PO 5 ), examined by X-ray photoelectron spectroscopy, TEM, photoelectrochemical characterization, and impedance measurements. Such a nano-composition design offers great promise to improve the overall performance of the photoanode material. © 2017 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

Fabrication and characterization of ZnO nanowires array electrodes with high photocurrent densities: Effects of the seed layer calcination time

Energy Technology Data Exchange (ETDEWEB)

Lu, Yi-Jing; Liu, Ching-Fang; Hu, Chi-Chang, E-mail: cchu@che.nthu.edu.tw; Kuo, Jen-Hou; Boddula, Rajender

2017-03-01

In this work, we demonstrate that vertically grown ZnO nanowire (NW) arrays of the wurzite phase were successfully fabricated on fluorine doped tin oxide (FTO) substrates via a hydrothermal method. The coating of a seed layer onto the FTO substrates was found to favor the growth of a uniform ZnO NWs array which shows saturation in the photocurrent density with a relatively low potential bias. Furthermore, prolonging the calcination time of the seed layer makes the ZnO NWs behave the better charge separation and improve the photo-electrochemical performance. Under the irradiation at a 75 mW cm{sup −2} from a simulated sunlight source, the ZnO NWs array electrode prepared from the seed layer with calcination at 350 °C for 5 h shows a saturated photocurrent density of 514 μA cm{sup −2} and a maximum half-cell solar-to-hydrogen (HC-STH) efficiency of 0.26% was obtained at 0.6 V versus reversible hydrogen electrode (RHE) in neutral electrolyte. - Highlights: • The seed layer annealing time strongly influences the textural and photo-activity of ZnO NWs. • The average diameter and density of ZnO NWs were controlled to 47–70 nm and 46–70 NWs μm{sup −2}, respectively. • ZnO NWs show promising application potential in solar-electrocatalytic water splitting under potential bias. • The ZnO NWs with SL annealing time = 5 h achieve the highest HC-STH efficiency of 0.26% at 0.6 V.

Interfacial engineering of CuO nanorod/ZnO nanowire hybrid nanostructure photoanode in dye-sensitized solar cell

Science.gov (United States)

Kilic, Bayram; Turkdogan, Sunay; Astam, Aykut; Baran, Sümeyra Seniha; Asgin, Mansur; Gur, Emre; Kocak, Yusuf

2018-01-01

Developing efficient and cost-effective photoanode plays a vital role determining the photocurrent and photovoltage in dye-sensitized solar cells (DSSCs). Here, we demonstrate DSSCs that achieve relatively high power conversion efficiencies (PCEs) by using one-dimensional (1D) zinc oxide (ZnO) nanowires and copper (II) oxide (CuO) nanorods hybrid nanostructures. CuO nanorod-based thin films were prepared by hydrothermal method and used as a blocking layer on top of the ZnO nanowires' layer. The use of 1D ZnO nanowire/CuO nanorod hybrid nanostructures led to an exceptionally high photovoltaic performance of DSSCs with a remarkably high open-circuit voltage (0.764 V), short current density (14.76 mA/cm2 under AM1.5G conditions), and relatively high solar to power conversion efficiency (6.18%) . The enhancement of the solar to power conversion efficiency can be explained in terms of the lag effect of the interfacial recombination dynamics of CuO nanorod-blocking layer on ZnO nanowires. This work shows more economically feasible method to bring down the cost of the nano-hybrid cells and promises for the growth of other important materials to further enhance the solar to power conversion efficiency.

Hierarchical ZnO Nanowires-loaded Sb-doped SnO2-ZnO Micrograting Pattern via Direct Imprinting-assisted Hydrothermal Growth and Its Selective Detection of Acetone Molecules

OpenAIRE

Choi, Hak-Jong; Choi, Seon-Jin; Choo, Soyoung; Kim, Il-Doo; Lee, Heon

2016-01-01

We propose a novel synthetic route by combining imprinting transfer of a Sb-doped SnO2 (ATO)-ZnO composite micrograting pattern (MP), i.e., microstrip lines, on a sensor substrate and subsequent hydrothermal growth of ZnO nanowires (NWs) for producing a hierarchical ZnO NW-loaded ATO-ZnO MP as an improved chemo-resistive sensing layer. Here, ATO-ZnO MP structure with 3-?m line width, 9-?m pitch, and 6-?m height was fabricated by direct transfer of mixed ATO and ZnO nanoparticle (NP)-dispersed...

Electrostatically Gated Graphene-Zinc Oxide Nanowire Heterojunction.

Science.gov (United States)

You, Xueqiu; Pak, James Jungho

2015-03-01

This paper presents an electrostatically gated graphene-ZnO nanowire (NW) heterojunction for the purpose of device applications for the first time. A sub-nanometer-thick energy barrier width was formed between a monatomic graphene layer and electrochemically grown ZnO NWs. Because of the narrow energy barrier, electrons can tunnel through the barrier when a voltage is applied across the junction. A near-ohmic current-voltage (I-V) curve was obtained from the graphene-electrochemically grown ZnO NW heterojunction. This near-ohmic contact changed to asymmetric I-V Schottky contact when the samples were exposed to an oxygen environment. It is believed that the adsorbed oxygen atoms or molecules on the ZnO NW surface capture free electrons of the ZnO NWs, thereby creating a depletion region in the ZnO NWs. Consequentially, the electron concentration in the ZnO NWs is dramatically reduced, and the energy barrier width of the graphene-ZnO NW heterojunction increases greatly. This increased energy barrier width reduces the electron tunneling probability, resulting in a typical Schottky contact. By adjusting the back-gate voltage to control the graphene-ZnO NW Schottky energy barrier height, a large modulation on the junction current (on/off ratio of 10(3)) was achieved.

Thermal growth and cathodoluminescence of Bi doped ZnO nanowires and rods

International Nuclear Information System (INIS)

Aleman, B; Hidalgo, P; Fernandez, P; Piqueras, J

2009-01-01

Bi doped ZnO nanowires and rods have been grown by a catalyst free evaporation-deposition method with precursors containing either ZnO and Bi 2 O 3 or ZnS and Bi 2 O 3 powders. The use of ZnS as a precursor was found to lead to a higher density of nano- and microstructures at lower temperatures than by using ZnO. Energy dispersive x-ray spectroscopy (EDS) shows that the Bi content in the wires and rods is in the range 0.15-0.35 at%. Bi incorporation was found to induce a red shift of the near band gap luminescence but no quantitative correlation between the shift and the amount of Bi, as measured by EDS, was observed. The I-V curves of single Bi doped wires had linear behaviour at low current and non-linear behaviour for high currents, qualitatively similar to that of undoped wires.

Thermal growth and cathodoluminescence of Bi doped ZnO nanowires and rods

Energy Technology Data Exchange (ETDEWEB)

Aleman, B; Hidalgo, P; Fernandez, P; Piqueras, J, E-mail: balemanl@fis.ucm.e [Departamento de Fisica de Materiales, Facultad de Ciencias FIsicas, Universidad Complutense de Madrid, 28040 Madrid (Spain)

2009-11-21

Bi doped ZnO nanowires and rods have been grown by a catalyst free evaporation-deposition method with precursors containing either ZnO and Bi{sub 2}O{sub 3} or ZnS and Bi{sub 2}O{sub 3} powders. The use of ZnS as a precursor was found to lead to a higher density of nano- and microstructures at lower temperatures than by using ZnO. Energy dispersive x-ray spectroscopy (EDS) shows that the Bi content in the wires and rods is in the range 0.15-0.35 at%. Bi incorporation was found to induce a red shift of the near band gap luminescence but no quantitative correlation between the shift and the amount of Bi, as measured by EDS, was observed. The I-V curves of single Bi doped wires had linear behaviour at low current and non-linear behaviour for high currents, qualitatively similar to that of undoped wires.

Microwave-assisted aqueous synthesis of ultralong ZnO nanowires: photoluminescence and photovoltaic performance for dye-sensitized solar cell

Energy Technology Data Exchange (ETDEWEB)

Min, C.; Shen, X.; Sheng, W. [Jiangsu University, School of Materials Science and Engineering, Zhenjiang (China)

2009-09-15

Ultralong ZnO nanowires were successfully prepared on a large scale by a microwave-assisted aqueous route without using any surfactant or template at relatively low temperature of 120 C. The obtained nanowires were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), transmission electron microscopy (TEM), high resolution transmission electron microscopy (HRTEM), and energy-dispersive X-ray spectrum (EDX). The growth mechanism and photoluminescence of the one-dimensional nanostructure, and photovoltaic performances for dye-sensitized solar cell (DSSC) of the nanowires were discussed in detail. (orig.)

ZnO nanowires for the modification of evanescence-field sensors and the development of novel solar cells; ZnO-Nanodraehte zur Modifizierung von Evaneszenzfeldsensoren und der Entwicklung neuartiger Solarzellen

Energy Technology Data Exchange (ETDEWEB)

Boerner, Susanne

2008-10-02

The photoluminescence of single structures and the nanowire ensemble were analyzed and compared. This pursued in dependence on the excitation density and the sample temperature. The excitonic emission contributes essentially to the near-band-edge photoluminescence. The ZnO nanowire ensemble exhibits a laser threshold of 500 kW/cm{sup 2} at room temperature. To the photoluminescence spectra the single exciton processes were assigned. The wave-guiding properties were practically detected by means of optical microscopy and micromanipulation. While the main topic of this thesis lied in the analysis of the optical properties of the ZnO nanowires in the last part the implementation of nanostructures in hybrid solar cells was discussed and first results of the characterization of the material complex of p-conducting polymer (Clevios P) and ZnO nanowires presented.

Emergent ferromagnetism in ZnO/Al2O3 core-shell nanowires: Towards oxide spinterfaces

KAUST Repository

Xing, G. Z.; Wang, D. D.; Cheng, C.-J.; He, M.; Li, S.; Wu, Tao

2013-01-01

We report that room-temperature ferromagnetism emerges at the interface formed between ZnO nanowire core and Al2O3 shell although both constituents show mainly diamagnetism. The interface-based ferromagnetism can be further enhanced by annealing the ZnO/Al2O3 core-shell nanowires and activating the formation of ZnAl2O4 phase as a result of interfacial solid-state reaction. High-temperature measurements indicate that the magnetic order is thermally stable up to 750 K. Transmission electron microscopy studies reveal the annealing-induced jagged interfaces, and the extensive structural defects appear to be relevant to the emergent magnetism. Our study suggests that tailoring the spinterfaces in nanostructure-harnessed wide-band-gap oxides is an effective route towards engineered nanoscale architecture with enhanced magnetic properties.

Emergent ferromagnetism in ZnO/Al2O3 core-shell nanowires: Towards oxide spinterfaces

KAUST Repository

Xing, G. Z.

2013-07-08

We report that room-temperature ferromagnetism emerges at the interface formed between ZnO nanowire core and Al2O3 shell although both constituents show mainly diamagnetism. The interface-based ferromagnetism can be further enhanced by annealing the ZnO/Al2O3 core-shell nanowires and activating the formation of ZnAl2O4 phase as a result of interfacial solid-state reaction. High-temperature measurements indicate that the magnetic order is thermally stable up to 750 K. Transmission electron microscopy studies reveal the annealing-induced jagged interfaces, and the extensive structural defects appear to be relevant to the emergent magnetism. Our study suggests that tailoring the spinterfaces in nanostructure-harnessed wide-band-gap oxides is an effective route towards engineered nanoscale architecture with enhanced magnetic properties.

High optical and switching performance electrochromic devices based on a zinc oxide nanowire with poly(methyl methacrylate) gel electrolytes

Energy Technology Data Exchange (ETDEWEB)

Chun, Young Tea; Chu, Daping, E-mail: dpc31@cam.ac.uk [Electrical Engineering Division, Department of Engineering, University of Cambridge, 9 JJ Thomson Avenue, Cambridge CB3 0FA (United Kingdom); Neeves, Matthew; Placido, Frank [Thin Film Centre, University of the West of Scotland, Paisley PA1 2BE (United Kingdom); Smithwick, Quinn [Disney Research, 521 Circle Seven Drive, Glendale, Los Angeles, California 91201 (United States)

2014-11-10

High performance electrochromic devices have been fabricated and demonstrated utilizing a solid polymer electrolyte and zinc oxide (ZnO) nanowire (NW) array counter electrode. The poly(methyl methacrylate) based polymer electrolyte was spin coated upon hydrothermally grown ZnO NW array counter electrodes, while electron beam evaporated NiO{sub x} thin films formed the working electrodes. Excellent optical contrast and switching speeds were observed in the fabricated devices with active areas of 2 cm{sup 2}, exhibiting an optical contrast of 73.11% at the wavelength of 470 nm, combined with a fast switching time of 0.2 s and 0.4 s for bleaching and coloration, respectively.

High optical and switching performance electrochromic devices based on a zinc oxide nanowire with poly(methyl methacrylate) gel electrolytes

International Nuclear Information System (INIS)

Chun, Young Tea; Chu, Daping; Neeves, Matthew; Placido, Frank; Smithwick, Quinn

2014-01-01

High performance electrochromic devices have been fabricated and demonstrated utilizing a solid polymer electrolyte and zinc oxide (ZnO) nanowire (NW) array counter electrode. The poly(methyl methacrylate) based polymer electrolyte was spin coated upon hydrothermally grown ZnO NW array counter electrodes, while electron beam evaporated NiO x thin films formed the working electrodes. Excellent optical contrast and switching speeds were observed in the fabricated devices with active areas of 2 cm 2 , exhibiting an optical contrast of 73.11% at the wavelength of 470 nm, combined with a fast switching time of 0.2 s and 0.4 s for bleaching and coloration, respectively

Temperature dependent current transport of Pd/ZnO nanowire Schottky diodes

Science.gov (United States)

Gayen, R. N.; Bhattacharyya, S. R.; Jana, P.

2014-09-01

Zinc oxide (ZnO) nanowire based Schottky barrier diodes are fabricated by depositing Pd metal contact on top of vertically well-aligned ZnO nanowire arrays. A vertical array of ZnO nanowires on indium tin oxide (ITO) coated glass substrates is synthesized by hybrid wet chemical route. Scanning electron microscopy (SEM), x-ray diffraction (XRD) and x-ray photoelectron spectroscopy (XPS) measurement confirm the formation of stoichiometric well-aligned hexagonal (h-ZnO) nanowire arrays with wurtzite structure. Temperature dependent current-voltage (I-V) measurements on palladium-ZnO (Pd/ZnO) nanowire Schottky junctions in the temperature range 303-383 K exhibit excellent rectifying character. From these nonlinear I-V plots, different electrical parameters of diode-like reverse saturation current, barrier height and ideality factor are determined as a function of temperature assuming pure thermionic emission model. The ideality factor is found to decrease while the barrier height increases with the increase in temperature. The series resistance values calculated from Cheung’s functions also show temperature dependency. Such behavior can be attributed to the presence of defects that traps carriers, and barrier height inhomogeneity at the interface of the barrier junction. After barrier height inhomogeneity correction, considering a Gaussian distributed barrier height fluctuation across the Pd/ZnO interface, the estimated values of mean barrier height and modified Richardson constant are more closely matched to the theoretically predicted value for Pd/ZnO Schottky barrier diodes. The variation of density of interface states as a function of interface state energy is also calculated.

Tungsten oxide nanowires grown on graphene oxide sheets as high-performance electrochromic material

International Nuclear Information System (INIS)

Chang, Xueting; Sun, Shibin; Dong, Lihua; Hu, Xiong; Yin, Yansheng

2014-01-01

Graphical abstract: Electrochromic mechanism of tungsten oxide nanowires-reduced graphene oxide composite. - Highlights: • A novel inorganic-nano-carbon hybrid composite was prepared. • The hybrid composite has sandwich-like structure. • The hybrid composite exhibited high-quality electrohcromic performance. - Abstract: In this work, we report the synthesis of a novel hybrid electrochromic composite through nucleation and growth of ultrathin tungsten oxide nanowires on graphene oxide sheets using a facile solvothermal route. The competition between the growth of tungsten oxide nanowires and the reduction of graphene oxide sheets leads to the formation of sandwich-structured tungsten oxide-reduced graphene oxide composite. Due to the strongly coupled effect between the ultrathin tungsten oxide nanowires and the reduced graphene oxide nanosheets, the novel electrochromic composite exhibited high-quality electrochromic performance with fast color-switching speed, good cyclic stability, and high coloration efficiency. The present tungsten oxide-reduced graphene oxide composite represents a new approach to prepare other inorganic-reduced graphene oxide hybrid materials for electrochemical applications

Immobilization of horseradish peroxidase on ZnO nanowires/macroporous SiO2 composites for the complete decolorization of anthraquinone dyes.

Science.gov (United States)

Sun, Huaiyan; Jin, Xinyu; Jiang, Feng; Zhang, Ruifeng

2018-03-01

A zinc oxide (ZnO) nanowires/macroporous silicon dioxide composite was used as support to immobilize horseradish peroxidase (HRP) simply by in situ cross-linking method. As cross-linker was adsorbed on the surface of ZnO nanowires, the cross-linked HRP was quite different from the traditional cross-linking enzyme aggregates on both structure and catalytic performance. Among three epoxy compounds, diethylene glycol diglycidyl ether (DDE) was the best cross-linker, with which the loading amount of HRP with pI of 5.3 reached as high as 118.1 mg/g and specific activity was up to 14.9 U/mg-support. The mass loss of HRP cross-linked with DDE was negligible during 50-H leaching at 4 °C, and the thermal stability of the immobilized HRP was also quite good. The catalytic performance of immobilized HRP to decolorize anthraquinone dye was explored by using Reactive Blue 19 (RB 19) and Acid Violet 109 (AV 109) as model substrates. The results indicated that the immobilized HRP exhibited high decolorization efficiency and good reusability. The decolorization efficiency reached 94.3% and 95.9% for AV 109 and RB 19 within the first 30 Min, respectively. A complete decolorization of these two dyes has been realized within 2-3 H by using this new biocatalysis system. © 2017 International Union of Biochemistry and Molecular Biology, Inc.

An Enhanced UV-Vis-NIR an d Flexible Photodetector Based on Electrospun ZnO Nanowire Array/PbS Quantum Dots Film Heterostructure.

Science.gov (United States)

Zheng, Zhi; Gan, Lin; Zhang, Jianbing; Zhuge, Fuwei; Zhai, Tianyou

2017-03-01

ZnO nanostructure-based photodetectors have a wide applications in many aspects, however, the response range of which are mainly restricted in the UV region dictated by its bandgap. Herein, UV-vis-NIR sensitive ZnO photodetectors consisting of ZnO nanowires (NW) array/PbS quantum dots (QDs) heterostructures are fabricated through modified electrospining method and an exchanging process. Besides wider response region compared to pure ZnO NWs based photodetectors, the heterostructures based photodetectors have faster response and recovery speed in UV range. Moreover, such photodetectors demonstrate good flexibility as well, which maintain almost constant performances under extreme (up to 180°) and repeat (up to 200 cycles) bending conditions in UV-vis-NIR range. Finally, this strategy is further verified on other kinds of 1D nanowires and 0D QDs, and similar enhancement on the performance of corresponding photodetecetors can be acquired, evidencing the universality of this strategy.

Fabrication of ZnO Nanowire Based Piezoelectric Generators and Related Structures

Science.gov (United States)

Opoku, Charles; Dahiya, Abhishek Singh; Oshman, Christopher; Cayrel, Frederic; Poulin-Vittrant, Guylaine; Alquier, Daniel; Camara, Nicolas

Using vertically grown hydrothermal ZnO nanowires, we demonstrate the assembly of fully functional piezoelectric energy harvesters on plastics substrates. A seedless hydrothermal process is employed for the growth of single crystalline vertically orientated ZnO NWs at around 100oC. Flexible NG are assembled using ∼7 μm thick PDMS polymer matrix on a 3x3cm substrate. A representative device with an active area of 4cm2 is characterised revealing average output voltage generation of ∼22mV (±1.2) and -32mV (±0.16) in the positive and negative cycles after 3-4mm periodic deflection at 20Hz. A power density of ∼288nW/cm3 is estimated for the device. It is envisaged that such energy scavengers may find potential applications targeting self-powered systems, sensors and on-body charging of electronics.

Superhydrophobic Ag decorated ZnO nanostructured thin film as effective surface enhanced Raman scattering substrates

Science.gov (United States)

Jayram, Naidu Dhanpal; Sonia, S.; Poongodi, S.; Kumar, P. Suresh; Masuda, Yoshitake; Mangalaraj, D.; Ponpandian, N.; Viswanathan, C.

2015-11-01

The present work is an attempt to overcome the challenges in the fabrication of super hydrophobic silver decorated zinc oxide (ZnO) nanostructure thin films via thermal evaporation process. The ZnO nanowire thin films are prepared without any surface modification and show super hydrophobic nature with a contact angle of 163°. Silver is further deposited onto the ZnO nanowire to obtain nanoworm morphology. Silver decorated ZnO (Ag@ZnO) thin films are used as substrates for surface enhanced Raman spectroscopy (SERS) studies. The formation of randomly arranged nanowire and silver decorated nanoworm structure is confirmed using FESEM, HR-TEM and AFM analysis. Crystallinity and existence of Ag on ZnO are confirmed using XRD and XPS studies. A detailed growth mechanism is discussed for the formation of the nanowires from nanobeads based on various deposition times. The prepared SERS substrate reveals a reproducible enhancement of 3.082 × 107 M for Rhodamine 6G dye (R6G) for 10-10 molar concentration per liter. A higher order of SERS spectra is obtained for a contact angle of 155°. Thus the obtained thin films show the superhydrophobic nature with a highly enhanced Raman spectrum and act as SERS substrates. The present nanoworm morphology shows a new pathway for the construction of semiconductor thin films for plasmonic studies and challenges the orderly arranged ZnO nanorods, wires and other nano structure substrates used in SERS studies.

Digital selective growth of a ZnO nanowire array by large scale laser decomposition of zinc acetate.

Science.gov (United States)

Hong, Sukjoon; Yeo, Junyeob; Manorotkul, Wanit; Kang, Hyun Wook; Lee, Jinhwan; Han, Seungyong; Rho, Yoonsoo; Suh, Young Duk; Sung, Hyung Jin; Ko, Seung Hwan

2013-05-07

We develop a digital direct writing method for ZnO NW micro-patterned growth on a large scale by selective laser decomposition of zinc acetate. For ZnO NW growth, by replacing the bulk heating with the scanning focused laser as a fully digital local heat source, zinc acetate crystallites can be selectively activated as a ZnO seed pattern to grow ZnO nanowires locally on a larger area. Together with the selective laser sintering process of metal nanoparticles, more than 10,000 UV sensors have been demonstrated on a 4 cm × 4 cm glass substrate to develop all-solution processible, all-laser mask-less digital fabrication of electronic devices including active layer and metal electrodes without any conventional vacuum deposition, photolithographic process, premade mask, high temperature and vacuum environment.

Transformation of bulk alloys to oxide nanowires

Science.gov (United States)

Lei, Danni; Benson, Jim; Magasinski, Alexandre; Berdichevsky, Gene; Yushin, Gleb

2017-01-01

One dimensional (1D) nanostructures offer prospects for enhancing the electrical, thermal, and mechanical properties of a broad range of functional materials and composites, but their synthesis methods are typically elaborate and expensive. We demonstrate a direct transformation of bulk materials into nanowires under ambient conditions without the use of catalysts or any external stimuli. The nanowires form via minimization of strain energy at the boundary of a chemical reaction front. We show the transformation of multimicrometer-sized particles of aluminum or magnesium alloys into alkoxide nanowires of tunable dimensions, which are converted into oxide nanowires upon heating in air. Fabricated separators based on aluminum oxide nanowires enhanced the safety and rate capabilities of lithium-ion batteries. The reported approach allows ultralow-cost scalable synthesis of 1D materials and membranes.

Effects of ZnS layer on the performance improvement of the photosensitive ZnO nanowire arrays solar cells

Energy Technology Data Exchange (ETDEWEB)

Javed, Hafiz Muhammad Asif [Electronic Materials Research Laboratory, International Center for Dielectric Research, Key Laboratory of the Ministry of Education, Xi' an Jiaotong University, Xi' an, 710049 (China); Que, Wenxiu, E-mail: wxque@mail.xjtu.edu.cn [Electronic Materials Research Laboratory, International Center for Dielectric Research, Key Laboratory of the Ministry of Education, Xi' an Jiaotong University, Xi' an, 710049 (China); Gao, Yanping; Xing, Yonglei [Electronic Materials Research Laboratory, International Center for Dielectric Research, Key Laboratory of the Ministry of Education, Xi' an Jiaotong University, Xi' an, 710049 (China); Kong, Ling Bing, E-mail: ELBKong@ntu.edu.sg [School of Materials Science and Engineering, Nanyang Technological University, Nanyang Avenue, 639798 (Singapore)

2016-08-01

The impact of ZnS layer as an interface modification on the photosensitive ZnO nanowire arrays solar cells was studied. CdS, CdSe and ZnS were deposited on ZnO nanowire arrays by SILAR method. When a ZnS layer was deposited, the quantum dot barrier was indirectly become in contact with the electrolyte, which thus restrained the flow of electrons. The CdS sensitized solar cells has an efficiency of 0.55% with the deposition of the ZnS(3) layer, that is, with a deposition of three times, whereas the CdS/CdSe co-sensitized solar cells has an efficiency of 2.03% with the deposition of the ZnS(1) layer. It was also noted that as the thickness of the of ZnS layer was increased, V{sub oc}, I{sub sc} and efficiencies of both the solar cells were first increased and then decreased. In addition, the CdS/N719 solar cells has an efficiency of 0.75% with the deposition of the ZnS(2) layer. - Highlights: • The impact of ZnS layer on the photosensitive ZnO nanowire solar cells was studied. • ZnS layer restrained the flow of electrons to the electrolyte. • CdS/CdSe co-sensitized solar cells have higher efficiency than CdS solar cells. • When ZnS layer was increased, V{sub oc} and I{sub sc} firstly increased and then decreased.

pH-Dependent Toxicity of High Aspect Ratio ZnO Nanowires in Macrophages Due to Intracellular Dissolution

KAUST Repository

H. Müller, Karin; Kulkarni, Jaideep; Motskin, Michael; Goode, Angela; Winship, Peter; Skepper, Jeremy N.; Ryan, Mary P.; Porter, Alexandra E.

2010-01-01

exploitation. In this study, ZnO nanowires were found to be toxic to human monocyte macrophages (HMMs) at similar concentrations as ZnCl2. Confocal microscopy on live cells confirmed a rise in intracellular Zn2+ concentrations prior to cell death. In vitro, Zn

Preparation and gas-sensing property of parallel-aligned ZnO ...

Indian Academy of Sciences (India)

binding energy (60 meV) and a large bandgap (3·37 eV) energy, has many ... Con- siderable efforts have been made to fabricate ZnO nanowires, nanobelts .... In such a case, the data could be fitted to a straight line .... The re-oxidation pro-.

Electrodeposited highly-ordered manganese oxide nanowire arrays for supercapacitors

Science.gov (United States)

Liu, Haifeng; Lu, Bingqiang; Wei, Shuiqiang; Bao, Mi; Wen, Yanxuan; Wang, Fan

2012-07-01

Large arrays of well-aligned Mn oxide nanowires were prepared by electrodeposition using anodic aluminum oxide templates. The sizes of nanowires were tuned by varying the electrotype solution involved and the MnO2 nanowires with 10 μm in length were obtained in a neutral KMnO4 bath for 1 h. MnO2 nanowire arrays grown on conductor substance save the tedious electrode-making process, and electrochemical characterization demonstrates that the MnO2 nanowire arrays electrode has good capacitive behavior. Due to the limited mass transportation in narrow spacing, the spacing effects between the neighbor nanowires have show great influence to the electrochemical performance.

Identifying individual n- and p-type ZnO nanowires by the output voltage sign of piezoelectric nanogenerator

KAUST Repository

Lin, S S

2009-08-18

Based on a comparative study between the piezoelectric outputs of n-type nanowires (NWs) and n-core/p-shell NWs along with the previous study (Lu et al 2009 Nano. Lett. 9 1223), we demonstrate a one-step technique for identifying the conductivity type of individual ZnO nanowires (NWs) based on the output of a piezoelectric nanogenerator without destroying the sample. A negative piezoelectric output voltage indicates an NW is n-type and it appears after the tip scans across the center of the NW, while a positive output voltage reveals p-type conductivity and it appears before the tip scans across the central line of the NW. This atomic force microscopy based technique is reliable for statistically mapping the majority carrier type in ZnO NWs arrays. The technique may also be applied to other wurtzite semiconductors, such as GaN, CdS and ZnS. © 2009 IOP Publishing Ltd.

Plasmonic engineering of metal-oxide nanowire heterojunctions in integrated nanowire rectification units

Energy Technology Data Exchange (ETDEWEB)

Lin, Luchan; Zhou, Y. Norman, E-mail: liulei@tsinghua.edu.cn, E-mail: nzhou@uwaterloo.ca [Department of Mechanical Engineering, State Key Laboratory of Tribology, Tsinghua University, Beijing 100084 (China); Centre for Advanced Materials Joining, University of Waterloo, Waterloo, Ontario N2L 3G1 (Canada); Zou, Guisheng; Liu, Lei, E-mail: liulei@tsinghua.edu.cn, E-mail: nzhou@uwaterloo.ca [Department of Mechanical Engineering, State Key Laboratory of Tribology, Tsinghua University, Beijing 100084 (China); Duley, Walt W. [Centre for Advanced Materials Joining, University of Waterloo, Waterloo, Ontario N2L 3G1 (Canada); Department of Physics and Astronomy, University of Waterloo, Waterloo, Ontario N2L 3G1 (Canada)

2016-05-16

We show that irradiation with femtosecond laser pulses can produce robust nanowire heterojunctions in coupled non-wetting metal-oxide Ag-TiO{sub 2} structures. Simulations indicate that joining arises from the effect of strong plasmonic localization in the region of the junction. Strong electric field effects occur in both Ag and TiO{sub 2} resulting in the modification of both surfaces and an increase in wettability of TiO{sub 2}, facilitating the interconnection of Ag and TiO{sub 2} nanowires. Irradiation leads to the creation of a thin layer of highly defected TiO{sub 2} in the contact region between the Ag and TiO{sub 2} nanowires. The presence of this layer allows the formation of a heterojunction and offers the possibility of engineering the electronic characteristics of interfacial structures. Rectifying junctions with single and bipolar properties have been generated in Ag-TiO{sub 2} nanowire circuits incorporating asymmetrical and symmetrical interfacial structures, respectively. This fabrication technique should be applicable for the interconnection of other heterogeneous metal-oxide nanowire components and demonstrates that femtosecond laser irradiation enables interfacial engineering for electronic applications of integrated nanowire structures.

Plasmonic engineering of metal-oxide nanowire heterojunctions in integrated nanowire rectification units

Science.gov (United States)

Lin, Luchan; Zou, Guisheng; Liu, Lei; Duley, Walt W.; Zhou, Y. Norman

2016-05-01

We show that irradiation with femtosecond laser pulses can produce robust nanowire heterojunctions in coupled non-wetting metal-oxide Ag-TiO2 structures. Simulations indicate that joining arises from the effect of strong plasmonic localization in the region of the junction. Strong electric field effects occur in both Ag and TiO2 resulting in the modification of both surfaces and an increase in wettability of TiO2, facilitating the interconnection of Ag and TiO2 nanowires. Irradiation leads to the creation of a thin layer of highly defected TiO2 in the contact region between the Ag and TiO2 nanowires. The presence of this layer allows the formation of a heterojunction and offers the possibility of engineering the electronic characteristics of interfacial structures. Rectifying junctions with single and bipolar properties have been generated in Ag-TiO2 nanowire circuits incorporating asymmetrical and symmetrical interfacial structures, respectively. This fabrication technique should be applicable for the interconnection of other heterogeneous metal-oxide nanowire components and demonstrates that femtosecond laser irradiation enables interfacial engineering for electronic applications of integrated nanowire structures.

Oxidation of InP nanowires: a first principles molecular dynamics study.

Science.gov (United States)

Berwanger, Mailing; Schoenhalz, Aline L; Dos Santos, Cláudia L; Piquini, Paulo

2016-11-16

InP nanowires are candidates for optoelectronic applications, and as protective capping layers of III-V core-shell nanowires. Their surfaces are oxidized under ambient conditions which affects the nanowire physical properties. The majority of theoretical studies of InP nanowires, however, do not take into account the oxide layer at their surfaces. In this work we use first principles molecular dynamics electronic structure calculations to study the first steps in the oxidation process of a non-saturated InP nanowire surface as well as the properties of an already oxidized surface of an InP nanowire. Our calculations show that the O 2 molecules dissociate through several mechanisms, resulting in incorporation of O atoms into the surface layers. The results confirm the experimental observation that the oxidized layers become amorphous but the non-oxidized core layers remain crystalline. Oxygen related bonds at the oxidized layers introduce defective levels at the band gap region, with greater contributions from defects involving In-O and P-O bonds.

Vertically integrated nanogenerator based on ZnO nanowire arrays

Energy Technology Data Exchange (ETDEWEB)

Yu, Aifang; Li, Hongyu; Tang, Haoying; Liu, Tengjiao; Jiang, Peng [National Center for Nanoscience and Technology, No.11, Beiyitiao Zhongguancun, Beijing 100190 (China); Wang, Zhong Lin [National Center for Nanoscience and Technology, No.11, Beiyitiao Zhongguancun, Beijing 100190 (China); School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, GA 30332-0245 (United States)

2011-04-15

We report a technique to construct a vertically integrated nanogenerator (VI-NG) based on ZnO nanowire (NW) arrays. The VI-NG consists of nine single NGs connected mixed parallel and serial by a layer-by-layer stacking. For the single layer NG, the peak output voltage and current are 0.045 V and 2.5 nA, respectively. The VI-NG produces an output power density of 2.8 nW/cm{sup 2} with a peak output voltage of 0.15 V and output current of 7.2 nA. The vertical integration of the multi-NG provides a feasible technique for effectively converting mechanical energies to electricity from environment. (copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Ordered ZnO/AZO/PAM nanowire arrays prepared by seed-layer-assisted electrochemical deposition

International Nuclear Information System (INIS)

Shen, Yu-Min; Pan, Chih-Huang; Wang, Sheng-Chang; Huang, Jow-Lay

2011-01-01

An Al-doped ZnO (AZO) seed layer is prepared on the back side of a porous alumina membrane (PAM) substrate by spin coating followed by annealing in a vacuum at 400 °C. Zinc oxide in ordered arrays mediated by a high aspect ratio and an ordered pore array of AZO/PAM is synthesized. The ZnO nanowire array is prepared via a 3-electrode electrochemical deposition process using ZnSO 4 and H 2 O 2 solutions at a potential of − 1 V (versus saturated calomel electrode) and temperatures of 65 and 80 °C. The microstructure and chemical composition of the AZO seed layer and ZnO/AZO/PAM nanowire arrays are characterized by field emission scanning electron microscopy (FE-SEM), high-resolution transmission electron microscopy (HR-TEM), and energy-dispersive X-ray spectroscopy (EDS). Results indicate that the ZnO/AZO/PAM nanowire arrays were assembled in the nanochannel of the porous alumina template with diameters of 110–140 nm. The crystallinity of the ZnO nanowires depends on the AZO seed layer during the annealing process. The nucleation and growth process of ZnO/AZO/PAM nanowires are interpreted by the seed-layer-assisted growth mechanism.

Preparation and electrochemical characterization of MnOOH nanowire-graphene oxide

International Nuclear Information System (INIS)

Wang Lin; Wang Dianlong

2011-01-01

Highlights: → MnOOH nanowire-graphene oxide composites are prepared by hydrothermal reaction in distilled water or 5% ammonia aqueous solution at 130 deg. C, with MnO 2 -graphene oxide composites which are synthesized by a redox reaction between KMnO 4 and graphene oxide. → MnO 2 is deoxidized to MnOOH on graphene oxide through hydrothermal reaction without any extra reductants. → It is found that the electrochemical resistance of MnOOH nanowire-graphene oxide composites decreases and the capacitance increases to 76 F g -1 when hydrothermal reaction is conducted in ammonia aqueous solution. → MnOOH nanowire-graphene oxide composites prepared by hydrothermal reaction in 5% ammonia aqueous solution have excellent capacitance retention ratio at scan rate from 5 mV s -1 to 40 mV s -1 . - Abstract: MnOOH nanowire-graphene oxide composites are prepared by hydrothermal reaction in distilled water or 5% ammonia aqueous solution at 130 deg. C with MnO 2 -graphene oxide composites which are synthesized by a redox reaction between KMnO 4 and graphene oxide. Powder X-ray diffraction (XRD) analyses and energy dispersive X-ray analyses (EDAX) show MnO 2 is deoxidized to MnOOH on graphene oxide through hydrothermal reaction without any extra reductants. The electrochemical capacitance of MnOOH nanowire-graphene oxide composites prepared in 5% ammonia aqueous solution is 76 F g -1 at current density of 0.1 A g -1 . Moreover, electrochemical impedance spectroscopy (EIS) suggests the electrochemical resistance of MnOOH nanowire-graphene oxide composites is reduced when hydrothermal reaction is conducted in ammonia aqueous solution. The relationship between the electrochemical capacitance and the structure of MnOOH nanowire-graphene oxide composites is characterized by cyclic voltammetry (CV) and field emission scanning electron microscopy (FESEM). The results indicate the electrochemical performance of MnOOH nanowire-graphene oxide composites strongly depends on their

Application of Chemical Doping and Architectural Design Principles To Fabricate Nanowire Co2Ni3ZnO8 Arrays for Aqueous Asymmetric Supercapacitors.

Science.gov (United States)

Liu, Qi; Yang, Bin; Liu, Jingyuan; Yuan, Yi; Zhang, Hongsen; Liu, Lianhe; Wang, Jun; Li, Rumin

2016-08-10

Electrode materials derived from transition metal oxides have a serious problem of low electron transfer rate, which restricts their practical application. However, chemically doped graphene transforms the chemical bonding configuration to enhance electron transfer rate and, therefore, facilitates the successful fabrication of Co2Ni3ZnO8 nanowire arrays. In addition, the Co2Ni3ZnO8 electrode materials, considered as Ni and Zn ions doped into Co3O4, have a high electron transfer rate and electrochemical response capability, because the doping increases the degree of crystal defect and reaction of Co/Ni ions with the electrolyte. Hence, the Co2Ni3ZnO8 electrode exhibits a high rate property and excellent electrochemical cycle stability, as determined by electrochemical analysis of the relationship between specific capacitance, IR drop, Coulomb efficiency, and different current densities. From the results of a three-electrode system of electrochemical measurement, the Co2Ni3ZnO8 electrode demonstrates a specific capacitance of 1115 F g(-1) and retains 89.9% capacitance after 2000 cycles at a current density of 4 A g(-1). The energy density of the asymmetric supercapacitor (AC//Co2Ni3ZnO8) is 54.04 W h kg(-1) at the power density of 3200 W kg(-1).

High electro-catalytic activities of glucose oxidase embedded one-dimensional ZnO nanostructures

International Nuclear Information System (INIS)

Sarkar, Nirmal K; Bhattacharyya, Swapan K

2013-01-01

One-dimensional ZnO nanorods and nanowires are separately synthesized on Zn substrate by simple hydrothermal processes at low temperatures. Electro-catalytic responses of glucose oxidase/ZnO/Zn electrodes using these two synthesized nanostructures of ZnO are reported and compared with others available in literature. It is apparent the Michaelis–Menten constant, K M app , for the present ZnO nanowire, having a greater aspect ratio, is found to be the lowest when compared with others. This sensor shows lower oxidation peak potential with a long detection range of 6.6 μM–380 mM and the highest sensitivity of ∼35.1 μA cm −2 mM −1 , among the reported values in the literature. Enzyme catalytic efficiency and turnover numbers are also found to be remarkably high. (paper)

Exciton diffusion coefficient measurement in ZnO nanowires under electron beam irradiation

Science.gov (United States)

Donatini, Fabrice; Pernot, Julien

2018-03-01

In semiconductor nanowires (NWs) the exciton diffusion coefficient can be determined using a scanning electron microscope fitted with a cathodoluminescence system. High spatial and temporal resolution cathodoluminescence experiments are needed to measure independently the exciton diffusion length and lifetime in single NWs. However, both diffusion length and lifetime can be affected by the electron beam bombardment during observation and measurement. Thus, in this work the exciton lifetime in a ZnO NW is measured versus the electron beam dose (EBD) via a time-resolved cathodoluminescence experiment with a temporal resolution of 50 ps. The behavior of the measured exciton lifetime is consistent with our recent work on the EBD dependence of the exciton diffusion length in similar NWs investigated under comparable SEM conditions. Combining the two results, the exciton diffusion coefficient in ZnO is determined at room temperature and is found constant over the full span of EBD.

Near-Field Imaging of Free Carriers in ZnO Nanowires with a Scanning Probe Tip Made of Heavily Doped Germanium

Science.gov (United States)

Sakat, Emilie; Giliberti, Valeria; Bollani, Monica; Notargiacomo, Andrea; Pea, Marialilia; Finazzi, Marco; Pellegrini, Giovanni; Hugonin, Jean-Paul; Weber-Bargioni, Alexander; Melli, Mauro; Sassolini, Simone; Cabrini, Stefano; Biagioni, Paolo; Ortolani, Michele; Baldassarre, Leonetta

2017-11-01

A novel scanning probe tip made of heavily doped semiconductor is fabricated and used instead of standard gold-coated tips in infrared scattering-type near-field microscopy. Midinfrared near-field microscopy experiments are conducted on ZnO nanowires with a lateral resolution better than 100 nm, using tips made of heavily electron-doped germanium with a plasma frequency in the midinfrared (plasma wavelength of 9.5 μ m ). Nanowires embedded in a dielectric matrix are imaged at two wavelengths, 11.3 and 8.0 μ m , above and below the plasma wavelength of the tips. An opposite sign of the imaging contrasts between the nanowire and the dielectric matrix is observed at the two infrared wavelengths, indicating a clear role of the free-electron plasma in the heavily doped germanium tip in building the imaging contrast. Electromagnetic simulations with a multispherical dipole model accounting for the finite size of the tip are well consistent with the experiments. By comparison of the simulated and measured imaging contrasts, an estimate for the local free-carrier density in the investigated ZnO nanowires in the low 1019 cm-3 range is retrieved. The results are benchmarked against the scattering intensity and phase maps obtained on the same sample with a gold-coated probe tip in pseudoheterodyne detection mode.

Synthesis, characterization and photoluminescence of tin oxide nanoribbons and nanowires

Energy Technology Data Exchange (ETDEWEB)

Duraia, El-Shazly M.A., E-mail: duraia_physics@yahoo.co [Suez Canal University, Faculty of Science, Physics Department, Ismailia (Egypt); Al-Farabi Kazakh National University, Almaty (Kazakhstan); Institute of Physics and Technology, 11 Ibragimov Street, 050032 Almaty (Kazakhstan); Mansorov, Z.A. [Al-Farabi Kazakh National University, Almaty (Kazakhstan); Tokmolden, S. [Institute of Physics and Technology, 11 Ibragimov Street, 050032 Almaty (Kazakhstan)

2009-11-15

In this work we report the successful formation of tin oxide nanowires and tin oxide nanoribbons with high yield and by using simple cheap method. We also report the formation of curved nanoribbon, wedge-like tin oxide nanowires and star-like nanowires. The growth mechanism of these structures has been studied. Scanning electron microscope was used in the analysis and the EDX analysis showed that our samples is purely Sn and O with ratio 1:2. X-ray analysis was also used in the characterization of the tin oxide nanowire and showed the high crystallinity of our nanowires. The mechanism of the growth of our1D nanostructures is closely related to the vapor-liquid-solid (VLS) process. The photoluminescence PL measurements for the tin oxide nanowires indicated that there are three stable emission peaks centered at wavelengths 630, 565 and 395 nm. The nature of the transition may be attributed to nanocrystals inside the nanobelts or to Sn or O vacancies occurring during the growth which can induce trapped states in the band gap.

Zinc oxide nanostructures: new properties for advances applications

International Nuclear Information System (INIS)

Lupan, Oleg; Chow, Lee; Pauporte, Thierry

2011-01-01

Zinc oxide is a material which exhibits a variety of new properties at nanometer dimensions. Various synthesis techniques have been carried out to provide growth of nanowires, nanorods, nanorings, nanosprings, and nanobelts of ZnO under various conditions. These nanostructures show that ZnO possesses probably the richest family of nanoarchitectures among all materials, including their structures and properties. Such nanoarchitectures are potential building blocks for novel applications in optoelectronics, sensors, photovoltaic and nano-biomedical sciences. This work presents a review of various nano architectures of ZnO grown by the electrochemical, hydrothermal and solid-vapor phase techniques and their properties. The possible applications of ZnO nanowires as sensors, nano-DSSC, photodetectors and nano-LEDs will be presented.

Piezoelectric properties of zinc oxide nanowires: an ab initio study.

Science.gov (United States)

Korir, K K; Cicero, G; Catellani, A

2013-11-29

Nanowires made of materials with non-centrosymmetric crystal structures are expected to be ideal building blocks for self-powered nanodevices due to their piezoelectric properties, yet a controversial explanation of the effective operational mechanisms and size effects still delays their real exploitation. To solve this controversy, we propose a methodology based on DFT calculations of the response of nanostructures to external deformations that allows us to distinguish between the different (bulk and surface) contributions: we apply this scheme to evaluate the piezoelectric properties of ZnO [0001] nanowires, with a diameter up to 2.3 nm. Our results reveal that, while surface and confinement effects are negligible, effective strain energies, and thus the nanowire mechanical response, are dependent on size. Our unified approach allows for a proper definition of piezoelectric coefficients for nanostructures, and explains in a rigorous way the reason why nanowires are found to be more sensitive to mechanical deformation than the corresponding bulk material.

Piezoelectric properties of zinc oxide nanowires: an ab initio study

International Nuclear Information System (INIS)

Korir, K K; Cicero, G; Catellani, A

2013-01-01

Nanowires made of materials with non-centrosymmetric crystal structures are expected to be ideal building blocks for self-powered nanodevices due to their piezoelectric properties, yet a controversial explanation of the effective operational mechanisms and size effects still delays their real exploitation. To solve this controversy, we propose a methodology based on DFT calculations of the response of nanostructures to external deformations that allows us to distinguish between the different (bulk and surface) contributions: we apply this scheme to evaluate the piezoelectric properties of ZnO [0001] nanowires, with a diameter up to 2.3 nm. Our results reveal that, while surface and confinement effects are negligible, effective strain energies, and thus the nanowire mechanical response, are dependent on size. Our unified approach allows for a proper definition of piezoelectric coefficients for nanostructures, and explains in a rigorous way the reason why nanowires are found to be more sensitive to mechanical deformation than the corresponding bulk material. (paper)

CL from ZnO nanowires and microneedles Co-doped with N and Mn

International Nuclear Information System (INIS)

Herrera, M; Morales, A; Díaz, J A

2014-01-01

Cathodoluminescence (CL) was used to study the luminescence emission of ZnO : N, Mn nanowires and microneedles grown by thermal evaporation. CL spectra acquired at room temperature showed the presence of near band edge and defect-related emissions. The defect related emission comprised two bands centered at 2.28 and 2.5 eV. The first component was attributed to the formation of spinel ZnMn 2 O 4  and the second to the well-known ZnO green emission. CL spectra acquired at 100 K showed two emissions centered at 3.22 and 3.25 eV that were attributed to donor–acceptor pair (DAP) and FA transitions, respectively. It was proposed that substitutional nitrogen (N O ) and zinc interstitial (Zn i ) were acceptor and shallow-donor centers in the DAP transition. (paper)

Light-induced antifungal activity of TiO2 nanoparticles/ZnO nanowires

International Nuclear Information System (INIS)

Haghighi, N.; Abdi, Y.; Haghighi, F.

2011-01-01

Antifungal activity of TiO 2 /ZnO nanostructures under visible light irradiation was investigated. A simple chemical method was used to synthesize ZnO nanowires. Zinc acetate dihydrate, Polyvinyl Pyrrolidone and deionized water were used as precursor, capping and solvent, respectively. TiO 2 nanoparticles were deposited on ZnO nanowires using an atmospheric pressure chemical vapor deposition system. X-ray diffraction pattern of TiO 2 /ZnO nano-composite has represented the diffraction peaks relating to the crystal planes of the TiO 2 (anatase and rutile) and ZnO. TiO 2 /ZnO nanostructure antifungal effect on Candida albicans biofilms was studied and compared with the activity of TiO 2 nanoparticles and ZnO nanowires. The high efficiency photocatalytic activity of TiO 2 nanoparticles leads to increased antifungal activity of ZnO nanowires. Scanning electron microscope was utilized to study the morphology of the as prepared nanostructures and the degradation of the yeast.

Chemically synthesized metal-oxide-metal segmented nanowires with high ferroelectric response

International Nuclear Information System (INIS)

Herderick, Edward D; Padture, Nitin P; Polomoff, Nicholas A; Huey, Bryan D

2010-01-01

A chemical synthesis method is presented for the fabrication of high-definition segmented metal-oxide-metal (MOM) nanowires in two different ferroelectric oxide systems: Au-BaTiO 3 -Au and Au-PbTiO 3 -Au. This method entails electrodeposition of segmented nanowires of Au-TiO 2 -Au inside anodic aluminum oxide (AAO) templates, followed by topotactic hydrothermal conversion of the TiO 2 segments into BaTiO 3 or PbTiO 3 segments. Two-terminal devices from individual MOM nanowires are fabricated, and their ferroelectric properties are measured directly, without the aid of scanning probe microscopy (SPM) methods. The MOM nanowire architecture provides high-quality end-on electrical contacts to the oxide segments, and allows direct measurement of properties of nanoscale volume, strain-free oxide segments. Unusually high ferroelectric responses, for chemically synthesized oxides, in these MOM nanowires are reported, and are attributed to the lack of residual strain in the oxides. The ability to measure directly the active properties of nanoscale volume, strain-free oxides afforded by the MOM nanowire architecture has important implications for fundamental studies of not only ferroelectric nanostructures but also nanostructures in the emerging field of multiferroics.

ZnO nanowire/TiO2 nanoparticle photoanodes prepared by the ultrasonic irradiation assisted dip-coating method

International Nuclear Information System (INIS)

Gan Xiaoyan; Li Xiaomin; Gao Xiangdong; Zhuge Fuwei; Yu Weidong

2010-01-01

Hybrid ZnO/TiO 2 photoanodes for dye-sensitized solar cells were prepared by combining ZnO nanowire (NW) arrays and TiO 2 nanoparticles (NPs) with the assistance of the ultrasonic irradiation assisted dip-coating method. Results show that the ultrasonic irradiation was an efficient way to promote the gap filling of TiO 2 NPs in the interstices of ZnO NWs. Hybrid ZnO NW/TiO 2 NP electrodes prepared with ultrasonic treatment exhibited better gap filling efficiency and higher visible absorptance. The overall conversion efficiency of the hybrid electrode was 0.79%, representing 35% improvement compared with that of the traditional one (0.58%). The enlarged surface area and improved attachments of TiO 2 NPs onto the walls of ZnO NWs induced by the application of ultrasonic irradiation may be the underlying reason. Electrochemical impedance spectroscopy measurements indicated that hybrid electrodes combined the advantages of improved electron transport along the ZnO NWs and increased surface area provided by infiltrated TiO 2 NPs, both of which are responsible for the improved cell efficiency.

Magnetic nanoparticles as a seed layer for growing ZnO nanowires for optical applications

International Nuclear Information System (INIS)

AlSalhi, M S; Atif, M; Ansari, Anees A; Khun, K; Ibupoto, Z H; Willander, M

2013-01-01

In the present work, cerium oxide CeO 2 nanoparticles were synthesised by sol-gel method and used for the growth of ZnO nanorods. The synthesised nanoparticles were studied by x-ray diffraction technique [XRD]. Furthermore, these nanoparticles were used as seed layer for the growth of ZnO nanorods by following the hydrothermal growth method. The structural study of ZnO nanorods was carried out by using field emission scanning electron microscopy [FESEM], and x-ray diffraction [XRD] techniques. This study demonstrated that the grown ZnO nanorods are well align, uniform, good in crystal quality and possess diameter of less than 200 nm. Energy dispersive x-rays [EDX] revealed that the ZnO nanorods are only composed of zinc, cerium as seed atom and oxygen atoms and no any other impurity in the grown nanorods. Moreover, photoluminescence [PL] approach was applied for the optical characterisation and it was observed that the near-band-edge emission [NBE] was same to that of zinc acetate seed layer, however the green emission and orange/red emission peaks were slightly raised due to possible higher level of defects in the cerium oxide seeded ZnO nanorods. This study provides an alternative approach for the synthesis of controlled ZnO nanorods using cerium oxide nanoparticles as seed nucleation layer which in reverse describe the application of these nanoparticles as well as due to controlled morphology of ZnO nanorods the performance of nanodevices based on ZnO can be increased using these particles as seed.

Oxidative fabrication of patterned, large, non-flaking CuO nanowire arrays

International Nuclear Information System (INIS)

Mumm, F; Sikorski, P

2011-01-01

We report a simple and fast approach to fabricate large, non-flaking arrays of CuO nanowires by oxidizing thin copper substrates in air. Oxidative CuO nanowire growth is commonly accompanied by oxide layer flaking due to stress at the copper-copper oxide interface. Using thin substrates is shown to prevent this flaking by introducing favourable material thickness ratios in the samples after oxidation. Additionally, thin foils allow larger scale topographic patterns to be transferred from an underlying mould to realize non-flat, nanowire-decorated surfaces. Further patterning is possible by electrodeposition of a nickel layer, which restricts nanowire growth to specific areas of the sample.

Directed self-assembly of hybrid oxide/polymer core/shell nanowires with transport optimized morphology for photovoltaics

Energy Technology Data Exchange (ETDEWEB)

Zhang, Shanju; Pelligra, Candice I.; Keskar, Gayatri; Majewski, Pawel W.; Taylor, Andre D.; Pfefferle, Lisa D.; Osuji, Chinedum O. [Department of Chemical and Environmental Engineering, Yale University, New Haven, CT (United States); Jiang, Jie; Ismail-Beigi, Sohrab [Department of Applied Physics, Yale University, New Haven, CT (United States)

2012-01-03

An entirely bottom-up approach for the preparation of liquid crystalline suspensions of core-shell nanowires for ordered bulk heterojunction photovoltaics is demonstrated. Side-on attachment of polythiophene derivatives to ZnO nanowires promotes a co-axial polymer backbone-nanowire arrangement which favors high hole mobility. This strategy offers structural control over multiple length scales and a viable means of fabricating ordered films over large areas. (Copyright copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Low temperature synthesis of Zn nanowires by physical vapor deposition

Energy Technology Data Exchange (ETDEWEB)

Schroeder, Philipp; Kast, Michael; Brueckl, Hubert [Austrian Research Centers GmbH ARC, Nano- Systemtechnologies, Donau-City-Strasse 1, A-1220 Wien (Austria)

2007-07-01

We demonstrate catalytic growth of zinc nanowires by physical vapor deposition at modest temperatures of 125-175 C on various substrates. In contrast to conventional approaches using tube furnaces our home-built growth system allows to control the vapor sources and the substrate temperature separately. The silicon substrates were sputter coated with a thin gold layer as metal catalyst. The samples were heated to the growth temperature and subsequently exposed to the zinc vapor at high vacuum conditions. The work pressure was adjusted by the partial pressure of oxygen or argon flow gas. Scanning electron microscopy and atomic force microscopy characterizations revealed that the nanowires exhibit straight, uniform morphology and have diameters in the range of 50-350 nm and lengths up to 70 {mu}m. The Zn nanowires grow independently of the substrates crystal orientation via a catalytic vapor-solid growth mechanism. Since no nanowire formation was observed without gold coating, we expect that the onedimensional growth is initiated by a surface reactive Au seed. ZnO nanowires can be produced in the same preparation chamber by oxidation at 500 C in 1atm (80% Ar, 20% O{sub 2}) for 1 hour. ZnO is highly attractive for sensor applications.

Performance enhancement of metal nanowire-based transparent electrodes by electrically driven nanoscale nucleation of metal oxides

Science.gov (United States)

Shiau, Yu-Jeng; Chiang, Kai-Ming; Lin, Hao-Wu

2015-07-01

Solution-processed silver nanowire (AgNW) electrodes have been considered to be promising materials for next-generation flexible transparent conductive electrodes. Despite the fact that a single AgNW has extremely high conductivities, the high junction resistance between nanowires limits the performance of the AgNW matrix. Therefore, post-treatments are usually required to approach better NW-NW contact. Herein, we report a novel linking method that uses joule heating to accumulate sol-gel ZnO near nanowire junctions. The nanoscale ZnO nucleation successfully restrained the thermal instability of the AgNW under current injection and acted as an efficient tightening medium to realize good NW-NW contacts. A low process temperature (PET and PEN, feasible. The optimized AgNW transparent conductive electrodes (TCE) fabricated using this promising linking method exhibited a low sheet resistance (13 Ω sq-1), a high transmission (92% at 550 nm), a high figure of merit (FOM; up to σDC/σOp = 340) and can be applied to wide range of next-generation flexible optoelectronic devices.Solution-processed silver nanowire (AgNW) electrodes have been considered to be promising materials for next-generation flexible transparent conductive electrodes. Despite the fact that a single AgNW has extremely high conductivities, the high junction resistance between nanowires limits the performance of the AgNW matrix. Therefore, post-treatments are usually required to approach better NW-NW contact. Herein, we report a novel linking method that uses joule heating to accumulate sol-gel ZnO near nanowire junctions. The nanoscale ZnO nucleation successfully restrained the thermal instability of the AgNW under current injection and acted as an efficient tightening medium to realize good NW-NW contacts. A low process temperature (PET and PEN, feasible. The optimized AgNW transparent conductive electrodes (TCE) fabricated using this promising linking method exhibited a low sheet resistance (13 Ω sq

Chemically synthesized metal-oxide-metal segmented nanowires with high ferroelectric response

Energy Technology Data Exchange (ETDEWEB)

Herderick, Edward D; Padture, Nitin P [Department of Materials Science and Engineering, Center for Emergent Materials, Ohio State University, Columbus, OH 43210 (United States); Polomoff, Nicholas A; Huey, Bryan D, E-mail: padture.1@osu.edu [Department of Chemical, Materials, and Biomolecular Engineering, Institute of Materials Science, University of Connecticut, Storrs, CT 06269 (United States)

2010-08-20

A chemical synthesis method is presented for the fabrication of high-definition segmented metal-oxide-metal (MOM) nanowires in two different ferroelectric oxide systems: Au-BaTiO{sub 3}-Au and Au-PbTiO{sub 3}-Au. This method entails electrodeposition of segmented nanowires of Au-TiO{sub 2}-Au inside anodic aluminum oxide (AAO) templates, followed by topotactic hydrothermal conversion of the TiO{sub 2} segments into BaTiO{sub 3} or PbTiO{sub 3} segments. Two-terminal devices from individual MOM nanowires are fabricated, and their ferroelectric properties are measured directly, without the aid of scanning probe microscopy (SPM) methods. The MOM nanowire architecture provides high-quality end-on electrical contacts to the oxide segments, and allows direct measurement of properties of nanoscale volume, strain-free oxide segments. Unusually high ferroelectric responses, for chemically synthesized oxides, in these MOM nanowires are reported, and are attributed to the lack of residual strain in the oxides. The ability to measure directly the active properties of nanoscale volume, strain-free oxides afforded by the MOM nanowire architecture has important implications for fundamental studies of not only ferroelectric nanostructures but also nanostructures in the emerging field of multiferroics.

Light-induced antifungal activity of TiO{sub 2} nanoparticles/ZnO nanowires

Energy Technology Data Exchange (ETDEWEB)

Haghighi, N. [Nano-Physics Research Lab., Department of Physics, University of Tehran, Tehran (Iran, Islamic Republic of); Abdi, Y., E-mail: y.abdi@ut.ac.ir [Nano-Physics Research Lab., Department of Physics, University of Tehran, Tehran (Iran, Islamic Republic of); Haghighi, F. [Department of Medical Mycology, School of Medical sciences, Tarbiat Modares University, Tehran (Iran, Islamic Republic of)

2011-09-15

Antifungal activity of TiO{sub 2}/ZnO nanostructures under visible light irradiation was investigated. A simple chemical method was used to synthesize ZnO nanowires. Zinc acetate dihydrate, Polyvinyl Pyrrolidone and deionized water were used as precursor, capping and solvent, respectively. TiO{sub 2} nanoparticles were deposited on ZnO nanowires using an atmospheric pressure chemical vapor deposition system. X-ray diffraction pattern of TiO{sub 2}/ZnO nano-composite has represented the diffraction peaks relating to the crystal planes of the TiO{sub 2} (anatase and rutile) and ZnO. TiO{sub 2}/ZnO nanostructure antifungal effect on Candida albicans biofilms was studied and compared with the activity of TiO{sub 2} nanoparticles and ZnO nanowires. The high efficiency photocatalytic activity of TiO{sub 2} nanoparticles leads to increased antifungal activity of ZnO nanowires. Scanning electron microscope was utilized to study the morphology of the as prepared nanostructures and the degradation of the yeast.

Tuning electronic properties of In2O3 nanowires by doping control

International Nuclear Information System (INIS)

Lei, B.; Li, C.; Zhang, D.; Tang, D.; Zhou, C.

2004-01-01

We present two effective routes to tune the electronic properties of single-crystalline In 2 O 3 nanowires by controlling the doping. The first method involves using different O 2 concentrations during the synthesis. Lightly (heavily) doped nanowires were produced by using high (low) O 2 concentrations, respectively, as revealed by the conductances and threshold voltages of nanowire-based field-effect transistors. Our second method exploits post-synthesis baking, as baking heavily doped nanowires in ambient air led to suppressed conduction and a positive shift of the threshold voltage, whereas baking lightly doped nanowires in vacuum displayed the opposite behavior. Our approaches offer viable ways to tune the electronic properties of many nonstoichiometric metal oxide systems such as In 2 O 3 , SnO 2 , and ZnO nanowires for various applications

Synthesis and characterization of single-crystalline zinc tin oxide nanowires

Science.gov (United States)

Shi, Jen-Bin; Wu, Po-Feng; Lin, Hsien-Sheng; Lin, Ya-Ting; Lee, Hsuan-Wei; Kao, Chia-Tze; Liao, Wei-Hsiang; Young, San-Lin

2014-05-01

Crystalline zinc tin oxide (ZTO; zinc oxide with heavy tin doping of 33 at.%) nanowires were first synthesized using the electrodeposition and heat treatment method based on an anodic aluminum oxide (AAO) membrane, which has an average diameter of about 60 nm. According to the field emission scanning electron microscopy (FE-SEM) results, the synthesized ZTO nanowires are highly ordered and have high wire packing densities. The length of ZTO nanowires is about 4 μm, and the aspect ratio is around 67. ZTO nanowires with a Zn/(Zn + Sn) atomic ratio of 0.67 (approximately 2/3) were observed from an energy dispersive spectrometer (EDS). X-ray diffraction (XRD) and corresponding selected area electron diffraction (SAED) patterns demonstrated that the ZTO nanowire is hexagonal single-crystalline. The study of ultraviolet/visible/near-infrared (UV/Vis/NIR) absorption showed that the ZTO nanowire is a wide-band semiconductor with a band gap energy of 3.7 eV.

A general melt-injection-decomposition route to oriented metal oxide nanowire arrays

International Nuclear Information System (INIS)

Han, Dongqiang; Zhang, Xinwei; Hua, Zhenghe; Yang, Shaoguang

2016-01-01

Highlights: • A general melt-injection-decomposition (MID) route is proposed for the fabrication of oriented metal oxide nanowire arrays. • Four kinds of metal oxide (CuO, Mn_2O_3, Co_3O_4 and Cr_2O_3) nanowire arrays have been realized as examples through the developed MID route. • The mechanism of the developed MID route is discussed using Thermogravimetry and Differential Thermal Analysis technique. • The MID route is a versatile, simple, facile and effective way to prepare different kinds of oriented metal oxide nanowire arrays in the future. - Abstract: In this manuscript, a general melt-injection-decomposition (MID) route has been proposed and realized for the fabrication of oriented metal oxide nanowire arrays. Nitrate was used as the starting materials, which was injected into the nanopores of the anodic aluminum oxide (AAO) membrane through the capillarity action in its liquid state. At higher temperature, the nitrate decomposed into corresponding metal oxide within the nanopores of the AAO membrane. Oriented metal oxide nanowire arrays were formed within the AAO membrane as a result of the confinement of the nanopores. Four kinds of metal oxide (CuO, Mn_2O_3, Co_3O_4 and Cr_2O_3) nanowire arrays are presented here as examples fabricated by this newly developed process. X-ray diffraction, scanning electron microscopy and transmission electron microscopy studies showed clear evidence of the formations of the oriented metal oxide nanowire arrays. Formation mechanism of the metal oxide nanowire arrays is discussed based on the Thermogravimetry and Differential Thermal Analysis measurement results.

On quantum efficiency of photoluminescence in ZnO layers and nanostructures

Energy Technology Data Exchange (ETDEWEB)

Reshchikov, M.A., E-mail: mreshchi@vcu.ed [Physics Department, Virginia Commonwealth University, 701 W. Grace St., Richmond, VA 23284 (United States); El-Shaer, A.; Behrends, A.; Bakin, A.; Waag, A. [Institute of Semiconductor Technology, Technical University of Braunschweig, Braunschweig D-38106 (Germany)

2009-12-15

In this work we studied PL in ZnO layers and nanostructures, including ZnO homoepitaxial layers on ZnO substrate and ZnO-Zn{sub 1-x}Mg{sub x}O single quantum well (SQW) structures grown on sapphire substrates by MBE, and ZnO nanowires grown on sapphire by MOCVD. The external quantum efficiency (QE) of PL in O-face ZnO layers exceeded that in Zn-face ZnO layers by two orders of magnitude at low temperatures. In a sample with SQW the combined external QE from the 4.6-nm-wide SQW and 50-nm-thick Zn{sub 1-x}Mg{sub x}O barriers achieved 28% at 15 K. The highest external QE was observed in one of the samples with ZnO nanowires-52% at 15 K and 2% at 300 K. Contribution of defect-related PL bands in ZnO nanowires samples was extremely low.

Gate-Tunable Spin Exchange Interactions and Inversion of Magnetoresistance in Single Ferromagnetic ZnO Nanowires.

Science.gov (United States)

Modepalli, Vijayakumar; Jin, Mi-Jin; Park, Jungmin; Jo, Junhyeon; Kim, Ji-Hyun; Baik, Jeong Min; Seo, Changwon; Kim, Jeongyong; Yoo, Jung-Woo

2016-04-26

Electrical control of ferromagnetism in semiconductor nanostructures offers the promise of nonvolatile functionality in future semiconductor spintronics. Here, we demonstrate a dramatic gate-induced change of ferromagnetism in ZnO nanowire (NW) field-effect transistors (FETs). Ferromagnetism in our ZnO NWs arose from oxygen vacancies, which constitute deep levels hosting unpaired electron spins. The magnetic transition temperature of the studied ZnO NWs was estimated to be well above room temperature. The in situ UV confocal photoluminescence (PL) study confirmed oxygen vacancy mediated ferromagnetism in the studied ZnO NW FET devices. Both the estimated carrier concentration and temperature-dependent conductivity reveal the studied ZnO NWs are at the crossover of the metal-insulator transition. In particular, gate-induced modulation of the carrier concentration in the ZnO NW FET significantly alters carrier-mediated exchange interactions, which causes even inversion of magnetoresistance (MR) from negative to positive values. Upon sweeping the gate bias from -40 to +50 V, the MRs estimated at 2 K and 2 T were changed from -11.3% to +4.1%. Detailed analysis on the gate-dependent MR behavior clearly showed enhanced spin splitting energy with increasing carrier concentration. Gate-voltage-dependent PL spectra of an individual NW device confirmed the localization of oxygen vacancy-induced spins, indicating that gate-tunable indirect exchange coupling between localized magnetic moments played an important role in the remarkable change of the MR.

Long-Term Stability of Oxide Nanowire Sensors via Heavily Doped Oxide Contact.

Science.gov (United States)

Zeng, Hao; Takahashi, Tsunaki; Kanai, Masaki; Zhang, Guozhu; He, Yong; Nagashima, Kazuki; Yanagida, Takeshi

2017-12-22

Long-term stability of a chemical sensor is an essential quality for long-term collection of data related to exhaled breath, environmental air, and other sources in the Internet of things (IoT) era. Although an oxide nanowire sensor has shown great potential as a chemical sensor, the long-term stability of sensitivity has not been realized yet due to electrical degradation under harsh sensing conditions. Here, we report a rational concept to accomplish long-term electrical stability of metal oxide nanowire sensors via introduction of a heavily doped metal oxide contact layer. Antimony-doped SnO 2 (ATO) contacts on SnO 2 nanowires show much more stable and lower electrical contact resistance than conventional Ti contacts for high temperature (200 °C) conditions, which are required to operate chemical sensors. The stable and low contact resistance of ATO was confirmed for at least 1960 h under 200 °C in open air. This heavily doped oxide contact enables us to realize the long-term stability of SnO 2 nanowire sensors while maintaining the sensitivity for both NO 2 gas and light (photo) detections. The applicability of our method is confirmed for sensors on a flexible polyethylene naphthalate (PEN) substrate. Since the proposed fundamental concept can be applied to various oxide nanostructures, it will give a foundation for designing long-term stable oxide nanomaterial-based IoT sensors.

Synthesis of ZnO-TiO{sub 2} core-shell long nanowire arrays and their application on dye-sensitized solar cells

Energy Technology Data Exchange (ETDEWEB)

Feng Yamin [Department of Physics, Institute of Nanoscience and Nanotechnology, Central China Normal University, Wuhan 430079 (China); Ji Xiaoxu [School of Physics and Electronic Engineering, Nanyang Normal University, Nanyang 473003 (China); Duan Jinxia; Zhu Jianhui; Jiang Jian; Ding Hao; Meng Gaoxiang; Ding Ruimin; Liu Jinping [Department of Physics, Institute of Nanoscience and Nanotechnology, Central China Normal University, Wuhan 430079 (China); Hu Anzheng [School of Physics and Electronic Engineering, College of Xiangfan, Xiangfan 441813 (China); Huang Xintang, E-mail: xthuang@phy.ccnu.edu.cn [Department of Physics, Institute of Nanoscience and Nanotechnology, Central China Normal University, Wuhan 430079 (China)

2012-06-15

Long ZnO nanowire arrays (NAs) grown on fluorine-doped tin oxide (FTO) glasses have been synthesized via a facile hydrothermal method without refreshing the reaction solution and applied as the precursor. By adjusting growth conditions, ZnO NAs with tunable lengths can be achieved. A nanocomposite made of ZnO nanowire core and TiO{sub 2} shell was further realized by a novel 'fast-dip-coating' method conducted in a Ti(OC{sub 4}H{sub 9}){sub 4}-dissolved ethanol solution. The formed ZnO-TiO{sub 2} core-shell NAs on FTO substrates were applied as electrodes for dye sensitized solar cells (DSSCs). It is found that both the TiO{sub 2} coating and NAs length play important roles in the enhancement of photoelectric conversion efficiency (PCE) of DSSCs. When the length of ZnO-TiO{sub 2} NAs reaches up to 14 {mu}m, the electrode can exhibit a maximum PCE as high as 3.80%, which is 2.6 times higher than that of pure ZnO NAs. - Graphical abstract: ZnO nanowire arrays in the length of 14 {mu}m have been successfully synthesized on the FTO substrate and coated with a thin shell of TiO{sub 2}; the ZnO-TiO{sub 2} electrodes applied in DSSCs exhibit great photoelectric conversion efficiency as high as 3.80%. Highlights: Black-Right-Pointing-Pointer Long ZnO nanowire arrays have been synthesized by using hydrothermal method. Black-Right-Pointing-Pointer A TiO{sub 2} shell outside of ZnO nanowire is introduced by a fast dip-coating method. Black-Right-Pointing-Pointer ZnO and ZnO-TiO{sub 2} core-shell nanowires are applied as the electrodes for DSSCs. Black-Right-Pointing-Pointer The maximum conversion efficiency of ZnO-TiO{sub 2} electrode reaches to 3.80%.

Tungsten oxide nanowires grown on amorphous-like tungsten films

International Nuclear Information System (INIS)

Dellasega, D; Pezzoli, A; Russo, V; Passoni, M; Pietralunga, S M; Nasi, L; Conti, C; Vahid, M J; Tagliaferri, A

2015-01-01

Tungsten oxide nanowires have been synthesized by vacuum annealing in the range 500–710 °C from amorphous-like tungsten films, deposited on a Si(100) substrate by pulsed laser deposition (PLD) in the presence of a He background pressure. The oxygen required for the nanowires formation is already adsorbed in the W matrix before annealing, its amount depending on deposition parameters. Nanowire crystalline phase and stoichiometry depend on annealing temperature, ranging from W_1_8O_4_9-Magneli phase to monoclinic WO_3. Sufficiently long annealing induces the formation of micrometer-long nanowires, up to 3.6 μm with an aspect ratio up to 90. Oxide nanowire growth appears to be triggered by the crystallization of the underlying amorphous W film, promoting their synthesis at low temperatures. (paper)

A general melt-injection-decomposition route to oriented metal oxide nanowire arrays

Energy Technology Data Exchange (ETDEWEB)

Han, Dongqiang; Zhang, Xinwei; Hua, Zhenghe; Yang, Shaoguang, E-mail: sgyang@nju.edu.cn

2016-12-30

Highlights: • A general melt-injection-decomposition (MID) route is proposed for the fabrication of oriented metal oxide nanowire arrays. • Four kinds of metal oxide (CuO, Mn{sub 2}O{sub 3}, Co{sub 3}O{sub 4} and Cr{sub 2}O{sub 3}) nanowire arrays have been realized as examples through the developed MID route. • The mechanism of the developed MID route is discussed using Thermogravimetry and Differential Thermal Analysis technique. • The MID route is a versatile, simple, facile and effective way to prepare different kinds of oriented metal oxide nanowire arrays in the future. - Abstract: In this manuscript, a general melt-injection-decomposition (MID) route has been proposed and realized for the fabrication of oriented metal oxide nanowire arrays. Nitrate was used as the starting materials, which was injected into the nanopores of the anodic aluminum oxide (AAO) membrane through the capillarity action in its liquid state. At higher temperature, the nitrate decomposed into corresponding metal oxide within the nanopores of the AAO membrane. Oriented metal oxide nanowire arrays were formed within the AAO membrane as a result of the confinement of the nanopores. Four kinds of metal oxide (CuO, Mn{sub 2}O{sub 3}, Co{sub 3}O{sub 4} and Cr{sub 2}O{sub 3}) nanowire arrays are presented here as examples fabricated by this newly developed process. X-ray diffraction, scanning electron microscopy and transmission electron microscopy studies showed clear evidence of the formations of the oriented metal oxide nanowire arrays. Formation mechanism of the metal oxide nanowire arrays is discussed based on the Thermogravimetry and Differential Thermal Analysis measurement results.

A general melt-injection-decomposition route to oriented metal oxide nanowire arrays

Science.gov (United States)

Han, Dongqiang; Zhang, Xinwei; Hua, Zhenghe; Yang, Shaoguang

2016-12-01

In this manuscript, a general melt-injection-decomposition (MID) route has been proposed and realized for the fabrication of oriented metal oxide nanowire arrays. Nitrate was used as the starting materials, which was injected into the nanopores of the anodic aluminum oxide (AAO) membrane through the capillarity action in its liquid state. At higher temperature, the nitrate decomposed into corresponding metal oxide within the nanopores of the AAO membrane. Oriented metal oxide nanowire arrays were formed within the AAO membrane as a result of the confinement of the nanopores. Four kinds of metal oxide (CuO, Mn2O3, Co3O4 and Cr2O3) nanowire arrays are presented here as examples fabricated by this newly developed process. X-ray diffraction, scanning electron microscopy and transmission electron microscopy studies showed clear evidence of the formations of the oriented metal oxide nanowire arrays. Formation mechanism of the metal oxide nanowire arrays is discussed based on the Thermogravimetry and Differential Thermal Analysis measurement results.

Enhanced Performance of Nanowire-Based All-TiO2 Solar Cells using Subnanometer-Thick Atomic Layer Deposited ZnO Embedded Layer

International Nuclear Information System (INIS)

Ghobadi, Amir; Yavuz, Halil I.; Ulusoy, T. Gamze; Icli, K. Cagatay; Ozenbas, Macit; Okyay, Ali K.

2015-01-01

In this paper, the effect of angstrom-thick atomic layer deposited (ALD) ZnO embedded layer on photovoltaic (PV) performance of Nanowire-Based All-TiO 2 solar cells has been systematically investigated. Our results indicate that by varying the thickness of ZnO layer the efficiency of the solar cell can be significantly changed. It is shown that the efficiency has its maximum for optimal thickness of 1 ALD cycle in which this ultrathin ZnO layer improves device performance through passivation of surface traps without hampering injection efficiency of photogenerated electrons. The mechanisms contributing to this unprecedented change in PV performance of the cell have been scrutinized and discussed

ZnO nanowire co-growth on SiO2 and C by carbothermal reduction and vapour advection

International Nuclear Information System (INIS)

Vega, N C; Caram, J; Grinblat, G; Comedi, D; Wallar, R; LaPierre, R R; Tirado, M

2012-01-01

Vertically aligned ZnO nanowires (NWs) were grown on Au-nanocluster-seeded amorphous SiO 2 films by the advective transport and deposition of Zn vapours obtained from the carbothermal reaction of graphite and ZnO powders. Both the NW volume and visible-to-UV photoluminescence ratio were found to be strong functions of, and hence could be tailored by, the (ZnO+C) source–SiO 2 substrate distance. We observe C flakes on the ZnO NWs/SiO 2 substrates which exhibit short NWs that developed on both sides. The SiO 2 and C substrates/NW interfaces were studied in detail to determine growth mechanisms. NWs on Au-seeded SiO 2 were promoted by a rough ZnO seed layer whose formation was catalysed by the Au clusters. In contrast, NWs grew without any seed on C. A correlation comprising three orders of magnitude between the visible-to-UV photoluminescence intensity ratio and the NW volume is found, which results from a characteristic Zn partial pressure profile that fixes both O deficiency defect concentration and growth rate. (paper)

Access to residual carrier concentration in ZnO nanowires by calibrated scanning spreading resistance microscopy

Energy Technology Data Exchange (ETDEWEB)

Wang, L., E-mail: lin.wang@insa-lyon.fr; Brémond, G. [Institut des Nanotechnologies de Lyon (INL), Université de Lyon, CNRS UMR 5270, INSA Lyon, Bat. Blaise Pascal, 7 Avenue Jean Capelle, 69621 Villeurbanne (France); Chauveau, J. M. [Centre de Recherche sur l' Hétéro-Epitaxie et ses Applications (CRHEA), CNRS UPR10, rue Bernard Grégory 06560 Valbonne Sophia Antipolis (France); Physics Department, University of Nice Sophia Antipolis (UNS), Parc Valrose, 06103 Nice (France); Brenier, R. [Institut Lumière Matière (ILM), Université de Lyon, CNRS UMR 5306, Université Claude Bernard Lyon 1, 43 Boulevard du 11 Novembre 1918, 69622 Villeurbanne (France); Sallet, V.; Jomard, F.; Sartel, C. [Groupe d' Étude de la Matière Condensée (GEMaC), CNRS-Université de Versailles St Quentin en Yvelines, Université Paris-Saclay, 45 Avenue des Etats-Unis, 78035 Versailles (France)

2016-03-28

Scanning spreading resistance microscopy (SSRM) was performed on non-intentionally doped (nid) ZnO nanowires (NWs) grown by metal-organic chemical vapor deposition in order to measure their residual carrier concentration. For this purpose, an SSRM calibration profile has been developed on homoepitaxial ZnO:Ga multilayer staircase structures grown by molecular beam epitaxy. The Ga density measured by SIMS varies in the 1.7 × 10{sup 17 }cm{sup −3} to 3 × 10{sup 20 }cm{sup −3} range. From measurements on such Ga doped multi-layers, a monotonic decrease in SSRM resistance with increasing Ga density was established, indicating SSRM being a well-adapted technique for two dimensional dopant/carrier profiling on ZnO at nanoscale. Finally, relevant SSRM signal contrasts were detected on nid ZnO NWs, and the residual carrier concentration is estimated in the 1–3 × 10{sup 18 }cm{sup −3} range, in agreement with the result from four-probe measurements.

EDITORIAL: Nanowires for energy Nanowires for energy

Science.gov (United States)

LaPierre, Ray; Sunkara, Mahendra

2012-05-01

This special issue of Nanotechnology focuses on studies illustrating the application of nanowires for energy including solar cells, efficient lighting and water splitting. Over the next three decades, nanotechnology will make significant contributions towards meeting the increased energy needs of the planet, now known as the TeraWatt challenge. Nanowires in particular are poised to contribute significantly in this development as presented in the review by Hiralal et al [1]. Nanowires exhibit light trapping properties that can act as a broadband anti-reflection coating to enhance the efficiency of solar cells. In this issue, Li et al [2] and Wang et al [3] present the optical properties of silicon nanowire and nanocone arrays. In addition to enhanced optical properties, core-shell nanowires also have the potential for efficient charge carrier collection across the nanowire diameter as presented in the contribution by Yu et al [4] for radial junction a-Si solar cells. Hybrid approaches that combine organic and inorganic materials also have potential for high efficiency photovoltaics. A Si-based hybrid solar cell is presented by Zhang et al [5] with a photoconversion efficiency of over 7%. The quintessential example of hybrid solar cells is the dye-sensitized solar cell (DSSC) where an organic absorber (dye) coats an inorganic material (typically a ZnO nanostructure). Herman et al [6] present a method of enhancing the efficiency of a DSSC by increasing the hetero-interfacial area with a unique hierarchical weeping willow ZnO structure. The increased surface area allows for higher dye loading, light harvesting, and reduced charge recombination through direct conduction along the ZnO branches. Another unique ZnO growth method is presented by Calestani et al [7] using a solution-free and catalyst-free approach by pulsed electron deposition (PED). Nanowires can also make more efficient use of electrical power. Light emitting diodes, for example, will eventually become the

The fabrication of ZnO nanowire field-effect transistors combining dielectrophoresis and hot-pressing

International Nuclear Information System (INIS)

Chang, Y-K; Chau-N H, Franklin

2009-01-01

Zinc oxide nanowire field-effect transistors (NW-FETs) were fabricated combining the dielectrophoresis (DEP) and the hot-pressing methods. DEP was used to position both ends of the nanowires on top of the source and the drain electrodes, respectively. Hot-pressing of nanowires on the electrodes was then employed to ensure good contacts between the nanowires and the electrodes. The good device performance achieved with our method of fabrication indicates that DEP combined with hot-pressing has the potential to be applied to the fabrication of flexible electronics on a roll-to-roll basis.

Oxidant-Dependent Thermoelectric Properties of Undoped ZnO Films by Atomic Layer Deposition

KAUST Repository

Kim, Hyunho

2017-02-27

Extraordinary oxidant-dependent changes in the thermoelectric properties of undoped ZnO thin films deposited by atomic layer deposition (ALD) have been observed. Specifically, deionized water and ozone oxidants are used in the growth of ZnO by ALD using diethylzinc as a zinc precursor. No substitutional atoms have been added to the ZnO films. By using ozone as an oxidant instead of water, a thermoelectric power factor (σS) of 5.76 × 10 W m K is obtained at 705 K for undoped ZnO films. In contrast, the maximum power factor for the water-based ZnO film is only 2.89 × 10 W m K at 746 K. Materials analysis results indicate that the oxygen vacancy levels in the water- and ozone-grown ZnO films are essentially the same, but the difference comes from Zn-related defects present in the ZnO films. The data suggest that the strong oxidant effect on thermoelectric performance can be explained by a mechanism involving point defect-induced differences in carrier concentration between these two oxides and a self-compensation effect in water-based ZnO due to the competitive formations of both oxygen and zinc vacancies. This strong oxidant effect on the thermoelectric properties of undoped ZnO films provides a pathway to improve the thermoelectric performance of this important material.

Guiding modes of semi-infinite nanowire and their dispersion character

International Nuclear Information System (INIS)

Sun, Yuming; Su, Yuehua; Dai, Zhenhong; Wang, Weitian

2014-01-01

Conventionally, the optical properties of finite semiconductor nanowires have been understood and explained in terms of an infinite nanowire. This work describes completely different photonic modes for a semi-finite nanowire based on a rigorous theoretical method, and the implications for the finite one. First, the special eigenvalue problem charactered by the end results in a distinctive mode spectrum for the semi-infinite dielectric nanowire. Meanwhile, the results show hybrid degenerate modes away from cutoff frequency, and transverse electric–transverse magnetic (TE–TM) degeneracy. Second, accompanying a different mode spectrum, a semi-finite nanowire also shows a distinctive dispersion relation compared to an infinite nanowire. Taking a semi-infinite, ZnO nanowire as an example, we find that the ℏω−k z space is not continuous in the interested photon energy window, implying that there is no uniform polariton dispersion relation for semi-infinite nanowire. Our method is shown correct through a field-reconstruction for a thin ZnO nanowire (55 nm in radius) and position determination of FP modes for a ZnO nanowire (200 nm in diameter). The results are of great significance to correctly understand the guiding and lasing mechanisms of semiconductor nanowires. (paper)

Integrated ZnO nanotube arrays as efficient dye-sensitized solar cells

Energy Technology Data Exchange (ETDEWEB)

Xi, Y., E-mail: yxi6@cqu.edu.cn [Department of Applied Physics, Chongqing University, Chongqing 400044 (China); School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, GA 30332-0245 (United States); Wu, W.Z.; Fang, H. [School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, GA 30332-0245 (United States); Hu, C.G. [Department of Applied Physics, Chongqing University, Chongqing 400044 (China)

2012-07-15

Highlights: Black-Right-Pointing-Pointer Tuning the reaction parameters, we got the best reaction conditions on ITO glass. Black-Right-Pointing-Pointer Introduce ZnO NTs design of photoanode featuring high aspect ratio structure. Black-Right-Pointing-Pointer The design strategy integrates the optical fibers or ITO with ZnO NTs grown. - Abstract: Zinc oxide (ZnO) is a wide band gap semiconducting material and has been considered as an alternative material in dye-sensitized solar cell (DSSC) applications. A high-performance nanotube (NT) photoanode must have a large surface area for dye adsorption in order to enhance conversion efficiency. In this work, the way of hydrothermally grown ZnO NT arrays on the indium tin oxide (ITO) substrate is presented by utilizing a systematic study. By adjusting the hydrothermal reaction parameters, we attained the optimizing reaction conditions on the ITO substrate. Moreover, ZnO NT arrays are introduced as a photoanode on various substrates, such as optical fiber and ITO glass, for DSSCs applications. We took the contrast test with conversion efficiency of the DSSC based on ZnO NT arrays versus ZnO nanowire arrays on the ITO substrate, which the DSSC based on ZnO NT arrays shows significantly enhanced power conversion efficiency. Furthermore, the conversion efficiency of DSSC based on the ZnO NT arrays grown on an optical fiber substrate is enhanced up to 1.44%.

Manganese oxide nanowires, films, and membranes and methods of making

Science.gov (United States)

Suib, Steven Lawrence [Storrs, CT; Yuan, Jikang [Storrs, CT

2008-10-21

Nanowires, films, and membranes comprising ordered porous manganese oxide-based octahedral molecular sieves, and methods of making, are disclosed. A single crystal ultra-long nanowire includes an ordered porous manganese oxide-based octahedral molecular sieve, and has an average length greater than about 10 micrometers and an average diameter of about 5 nanometers to about 100 nanometers. A film comprises a microporous network comprising a plurality of single crystal nanowires in the form of a layer, wherein a plurality of layers is stacked on a surface of a substrate, wherein the nanowires of each layer are substantially axially aligned. A free standing membrane comprises a microporous network comprising a plurality of single crystal nanowires in the form of a layer, wherein a plurality of layers is aggregately stacked, and wherein the nanowires of each layer are substantially axially aligned.

Preparation and Use of Photocatalytically Active Segmented Ag|ZnO and Coaxial TiO2-Ag Nanowires Made by Templated Electrodeposition

Science.gov (United States)

Maijenburg, A. Wouter; Rodijk, Eddy J.B.; Maas, Michiel G.; ten Elshof, Johan E.

2014-01-01

Photocatalytically active nanostructures require a large specific surface area with the presence of many catalytically active sites for the oxidation and reduction half reactions, and fast electron (hole) diffusion and charge separation. Nanowires present suitable architectures to meet these requirements. Axially segmented Ag|ZnO and radially segmented (coaxial) TiO2-Ag nanowires with a diameter of 200 nm and a length of 6-20 µm were made by templated electrodeposition within the pores of polycarbonate track-etched (PCTE) or anodized aluminum oxide (AAO) membranes, respectively. In the photocatalytic experiments, the ZnO and TiO2 phases acted as photoanodes, and Ag as cathode. No external circuit is needed to connect both electrodes, which is a key advantage over conventional photo-electrochemical cells. For making segmented Ag|ZnO nanowires, the Ag salt electrolyte was replaced after formation of the Ag segment to form a ZnO segment attached to the Ag segment. For making coaxial TiO2-Ag nanowires, a TiO2 gel was first formed by the electrochemically induced sol-gel method. Drying and thermal annealing of the as-formed TiO2 gel resulted in the formation of crystalline TiO2 nanotubes. A subsequent Ag electrodeposition step inside the TiO2 nanotubes resulted in formation of coaxial TiO2-Ag nanowires. Due to the combination of an n-type semiconductor (ZnO or TiO2) and a metal (Ag) within the same nanowire, a Schottky barrier was created at the interface between the phases. To demonstrate the photocatalytic activity of these nanowires, the Ag|ZnO nanowires were used in a photocatalytic experiment in which H2 gas was detected upon UV illumination of the nanowires dispersed in a methanol/water mixture. After 17 min of illumination, approximately 0.2 vol% H2 gas was detected from a suspension of ~0.1 g of Ag|ZnO nanowires in a 50 ml 80 vol% aqueous methanol solution. PMID:24837535

Photocatalytic Water Oxidation on ZnO: A Review

Directory of Open Access Journals (Sweden)

Sharifah Bee Abdul Hamid

2017-03-01

Full Text Available The investigation of the water oxidation mechanism on photocatalytic semiconductor surfaces has gained much attention for its potential to unlock the technological limitations of producing H2 from carbon-free sources, i.e., H2O. This review seeks to highlight the available scientific and fundamental understanding towards the water oxidation mechanism on ZnO surfaces, as well as present a summary on the modification strategies carried out to increase the photocatalytic response of ZnO.

Catalyst-free growth of ZnO nanowires on ITO seed/glass by thermal evaporation method: Effects of ITO seed layer thickness

Energy Technology Data Exchange (ETDEWEB)

Alsultany, Forat H., E-mail: foratusm@gmail.com; Ahmed, Naser M. [School of Physics, Universiti Sains Malaysia, 11800 USM, Penang (Malaysia); Hassan, Z. [Institute of Nano-Optoelectronics Research and Technology Laboratory (INOR), Universiti Sains Malaysia, 11800 USM, Penang (Malaysia)

2016-07-19

A seed/catalyst-free growth of ZnO nanowires (ZnO-NWs) on a glass substrate were successfully fabricated using thermal evaporation technique. These nanowires were grown on ITO seed layers of different thicknesses of 25 and 75 nm, which were deposited on glass substrates by radio frequency (RF) magnetron sputtering. Prior to synthesized ITO nanowires, the sputtered ITO seeds were annealed using the continuous wave (CW) CO2 laser at 450 °C in air for 15 min. The effect of seed layer thickness on the morphological, structural, and optical properties of ZnO-NWs were systematically investigated by X-ray diffraction (XRD), field emission scanning electron microscopy (FESEM), and UV-Vis spectrophotometer.

Copper and Zinc Oxide Composite Nanostructures for Solar Energy Harvesting

Science.gov (United States)

Wu, Fei

Solar energy is a clean and sustainable energy source to counter global environmental issues of rising atmospheric CO2 levels and depletion of natural resources. To extract useful work from solar energy, silicon-based photovoltaic devices are extensively used. The technological maturity and the high quality of silicon (Si) make it a material of choice. However limitations in Si exist, ranging from its indirect band gap to low light absorption coefficient and energy and capital intensive crystal growth schemes. Therefore, alternate materials that are earth-abundant, benign and simpler to process are needed for developing new platforms for solar energy harvesting applications. In this study, we explore oxides of copper (CuO and Cu2O) in a nanowire morphology as alternate energy harvesting materials. CuO has a bandgap of 1.2 eV whereas Cu2O has a bandgap of 2.1 eV making them ideally suited for absorbing solar radiation. First, we develop a method to synthesize vertical, single crystalline CuO and Cu2O nanowires of ~50 microm length and aspect ratios of ~200. CuO nanowire arrays are synthesized by thermal oxidation of Cu foils. Cu2O nanowire arrays are synthesized by thermal reduction of CuO nanowires. Next, surface engineering of these nanowires is achieved using atomic layer deposition (ALD) of ZnO. By depositing 1.4 nm of ZnO, a highly defective surface is produced on the CuO nanowires. These defects are capable of trapping charge as is evident through persistent photoconductivity measurements of ZnO coated CuO nanowires. The same nanowires serve as efficient photocatalysts reducing CO2 to CO with a yield of 1.98 mmol/g-cat/hr. Finally, to develop a robust platform for flexible solar cells, a protocol to transfer vertical CuO nanowires inside flexible polydimethylsiloxane (PDMS) is demonstrated. Embedded CuO nanowires-ZnO pn junctions show a VOC of 0.4 V and a JSC of 10.4 microA/cm2 under white light illumination of 5.7 mW/cm2. Thus, this research provides broad

Thermal-treatment effect on the photoluminescence and gas-sensing properties of tungsten oxide nanowires

International Nuclear Information System (INIS)

Sun, Shibin; Chang, Xueting; Li, Zhenjiang

2010-01-01

Single-crystalline non-stoichiometric tungsten oxide nanowires were initially prepared using a simple solvothermal method. High resolution transmission electron microscopy (HRTEM) investigations indicate that the tungsten oxide nanowires exhibit various crystal defects, including stacking faults, dislocations, and vacancies. A possible defect-induced mechanism was proposed to account for the temperature-dependent morphological evolution of the tungsten oxide nanowires under thermal processing. Due to the high specific surface areas and non-stoichiometric crystal structure, the original tungsten oxide nanowires were highly sensitive to ppm level ethanol at room temperature. Thermal treatment under dry air condition was found to deteriorate the selectivity of room-temperature tungsten oxide sensors, and 400 o C may be considered as the top temperature limit in sensor applications for the solvothermally-prepared nanowires. The photoluminescence (PL) characteristics of tungsten oxide nanowires were also strongly influenced by thermal treatment.

Thermal-treatment effect on the photoluminescence and gas-sensing properties of tungsten oxide nanowires

Energy Technology Data Exchange (ETDEWEB)

Sun, Shibin [College of Electromechanical Engineering, Qingdao University of Science and Technology, Qingdao 266061, Shandong (China); Chang, Xueting [Institute of Materials Science and Engineering, Ocean University of China, Qingdao 266100, Shandong (China); Li, Zhenjiang, E-mail: zjli126@126.com [College of Electromechanical Engineering, Qingdao University of Science and Technology, Qingdao 266061, Shandong (China)

2010-09-15

Single-crystalline non-stoichiometric tungsten oxide nanowires were initially prepared using a simple solvothermal method. High resolution transmission electron microscopy (HRTEM) investigations indicate that the tungsten oxide nanowires exhibit various crystal defects, including stacking faults, dislocations, and vacancies. A possible defect-induced mechanism was proposed to account for the temperature-dependent morphological evolution of the tungsten oxide nanowires under thermal processing. Due to the high specific surface areas and non-stoichiometric crystal structure, the original tungsten oxide nanowires were highly sensitive to ppm level ethanol at room temperature. Thermal treatment under dry air condition was found to deteriorate the selectivity of room-temperature tungsten oxide sensors, and 400 {sup o}C may be considered as the top temperature limit in sensor applications for the solvothermally-prepared nanowires. The photoluminescence (PL) characteristics of tungsten oxide nanowires were also strongly influenced by thermal treatment.

A scalable route to prepare core–shell structured ZnO@PEDOT nanowires and PEDOT nanotubes and their properties as electrode materials

Energy Technology Data Exchange (ETDEWEB)

Wang, Fang, E-mail: 270220943@qq.com [Key Laboratory of Carbon Fiber and Functional Polymers, Ministry of Education, Beijing University of Chemical Technology, Beijing 100029 (China); Zhang, Xianhong, E-mail: zxh_0507@126.com [Key Laboratory of Carbon Fiber and Functional Polymers, Ministry of Education, Beijing University of Chemical Technology, Beijing 100029 (China); Yang, Le, E-mail: 13613513412@126.com [Key Laboratory of Carbon Fiber and Functional Polymers, Ministry of Education, Beijing University of Chemical Technology, Beijing 100029 (China); Xu, Dehong, E-mail: dedehenry@qq.com [Key Laboratory of Carbon Fiber and Functional Polymers, Ministry of Education, Beijing University of Chemical Technology, Beijing 100029 (China); Ma, Yuhong, E-mail: mayh@mail.buct.edu.cn [Key Laboratory of Carbon Fiber and Functional Polymers, Ministry of Education, Beijing University of Chemical Technology, Beijing 100029 (China); Chen, Dong, E-mail: chendong@mail.buct.edu.cn [Key Laboratory of Carbon Fiber and Functional Polymers, Ministry of Education, Beijing University of Chemical Technology, Beijing 100029 (China); Wang, Li, E-mail: lwang@mail.buct.edu.cn [Key Laboratory of Carbon Fiber and Functional Polymers, Ministry of Education, Beijing University of Chemical Technology, Beijing 100029 (China); Zhao, Changwen, E-mail: zhaocw@mail.buct.edu.cn [Key Laboratory of Carbon Fiber and Functional Polymers, Ministry of Education, Beijing University of Chemical Technology, Beijing 100029 (China); State Key Laboratory of Chemical Resource Engineering, Beijing University of Chemical Technology, Beijing 100029 (China); Yang, Wantai, E-mail: yangwt@mail.buct.edu.cn [Key Laboratory of Carbon Fiber and Functional Polymers, Ministry of Education, Beijing University of Chemical Technology, Beijing 100029 (China); State Key Laboratory of Chemical Resource Engineering, Beijing University of Chemical Technology, Beijing 100029 (China)

2016-05-01

Highlights: • ZnO@PEDOT nanowires and PEDOT nanotubes synthesized by chemical oxidation polymerization. • By controlling the ratio of ZnO/EDOT, ZnO@PEDOT formed different structures. • The maximum specific capacitance of PEDOT can reach 101.34 F/g. - Abstract: A composite of a core–shell structured nanowires with ZnO as a core and conductive poly(3,4-ethylenedioxythiophene) (PEDOT) as a shell was prepared. At first, the hexagonal ZnO nanowires, with diameter of about 80–100 nm and length 4–5 μm, were fabricated by hydrothermal synthesis process. Then a thick layer of poly(trifluoroethyl methacrylate)-block-poly(sodium styrene sulfonate) (PTFEMA-b-PSSNa) was grafted from the surface of ZnO nanowires via atom transfer free radical polymerization. At last, with the ZnO@PTFEMA-b-PSSNa as a template and the PSSNa chain as the counterion dopant, PEDOT was precipitated onto the surface of the template to form the composite of ZnO@PEDOT/PSSNa. With the evaluation of the EDOT polymerization, the thickness of the PEDOT layer increased steadily. However, as the ratio of EDOT/ZnO was greater than 1:2, the ZnO nanowires templates were dissolved at last and then PEDOT particles were produced due to increasing of the acidity during the oxidation polymerization of EDOT. In this case, the product was the mixture of the nanotubes and particles of PEDOT/PPSNa. The electrochemical capacitances of the composites with different structures were investigated with cyclic voltammetry, galvanostatic charge–discharge and electrochemical impedance spectroscopy techniques with three-electrode cell configuration. The maximum specific capacitance of ZnO@PEDOT electrode can reach 101.34 F/g at 20 mV/s.

TiO2 nanowire-templated hierarchical nanowire network as water-repelling coating

Science.gov (United States)

Hang, Tian; Chen, Hui-Jiuan; Xiao, Shuai; Yang, Chengduan; Chen, Meiwan; Tao, Jun; Shieh, Han-ping; Yang, Bo-ru; Liu, Chuan; Xie, Xi

2017-12-01

Extraordinary water-repelling properties of superhydrophobic surfaces make them novel candidates for a great variety of potential applications. A general approach to achieve superhydrophobicity requires low-energy coating on the surface and roughness on nano- and micrometre scale. However, typical construction of superhydrophobic surfaces with micro-nano structure through top-down fabrication is restricted by sophisticated fabrication techniques and limited choices of substrate materials. Micro-nanoscale topographies templated by conventional microparticles through surface coating may produce large variations in roughness and uncontrollable defects, resulting in poorly controlled surface morphology and wettability. In this work, micro-nanoscale hierarchical nanowire network was fabricated to construct self-cleaning coating using one-dimensional TiO2 nanowires as microscale templates. Hierarchical structure with homogeneous morphology was achieved by branching ZnO nanowires on the TiO2 nanowire backbones through hydrothermal reaction. The hierarchical nanowire network displayed homogeneous micro/nano-topography, in contrast to hierarchical structure templated by traditional microparticles. This hierarchical nanowire network film exhibited high repellency to both water and cell culture medium after functionalization with fluorinated organic molecules. The hierarchical structure templated by TiO2 nanowire coating significantly increased the surface superhydrophobicity compared to vertical ZnO nanowires with nanotopography alone. Our results demonstrated a promising strategy of using nanowires as microscale templates for the rational design of hierarchical coatings with desired superhydrophobicity that can also be applied to various substrate materials.

Growth of vertically aligned ZnO nanorods using textured ZnO films

Directory of Open Access Journals (Sweden)

Meléndrez Manuel

2011-01-01

Full Text Available Abstract A hydrothermal method to grow vertical-aligned ZnO nanorod arrays on ZnO films obtained by atomic layer deposition (ALD is presented. The growth of ZnO nanorods is studied as function of the crystallographic orientation of the ZnO films deposited on silicon (100 substrates. Different thicknesses of ZnO films around 40 to 180 nm were obtained and characterized before carrying out the growth process by hydrothermal methods. A textured ZnO layer with preferential direction in the normal c-axes is formed on substrates by the decomposition of diethylzinc to provide nucleation sites for vertical nanorod growth. Crystallographic orientation of the ZnO nanorods and ZnO-ALD films was determined by X-ray diffraction analysis. Composition, morphologies, length, size, and diameter of the nanorods were studied using a scanning electron microscope and energy dispersed x-ray spectroscopy analyses. In this work, it is demonstrated that crystallinity of the ZnO-ALD films plays an important role in the vertical-aligned ZnO nanorod growth. The nanorod arrays synthesized in solution had a diameter, length, density, and orientation desirable for a potential application as photosensitive materials in the manufacture of semiconductor-polymer solar cells. PACS 61.46.Hk, Nanocrystals; 61.46.Km, Structure of nanowires and nanorods; 81.07.Gf, Nanowires; 81.15.Gh, Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.

Room temperature strong coupling effects from single ZnO nanowire microcavity

KAUST Repository

Das, Ayan

2012-05-01

Strong coupling effects in a dielectric microcavity with a single ZnO nanowire embedded in it have been investigated at room temperature. A large Rabi splitting of ?100 meV is obtained from the polariton dispersion and a non-linearity in the polariton emission characteristics is observed at room temperature with a low threshold of 1.63 ?J/cm2, which corresponds to a polariton density an order of magnitude smaller than that for the Mott transition. The momentum distribution of the lower polaritons shows evidence of dynamic condensation and the absence of a relaxation bottleneck. The polariton relaxation dynamics were investigated by timeresolved measurements, which showed a progressive decrease in the polariton relaxation time with increase in polariton density. © 2012 Optical Society of America.

Phonon Confinement Induced Non-Concomitant Near-Infrared Emission along a Single ZnO Nanowire: Spatial Evolution Study of Phononic and Photonic Properties

Directory of Open Access Journals (Sweden)

Po-Hsun Shih

2017-10-01

Full Text Available The impact of mixed defects on ZnO phononic and photonic properties at the nanoscale is only now being investigated. Here we report an effective strategy to study the distribution of defects along the growth direction of a single ZnO nanowire (NW, performed qualitatively as well as quantitatively using energy dispersive spectroscopy (EDS, confocal Raman-, and photoluminescence (PL-mapping technique. A non-concomitant near-infrared (NIR emission of 1.53 ± 0.01 eV was observed near the bottom region of 2.05 ± 0.05 μm along a single ZnO NW and could be successfully explained by the radiative recombination of shallowly trapped electrons V_O^(** with deeply trapped holes at V_Zn^''. A linear chain model modified from a phonon confinement model was used to describe the growth of short-range correlations between the mean distance of defects and its evolution with spatial position along the axial growth direction by fitting the E2H mode. Our results are expected to provide new insights into improving the study of the photonic and photonic properties of a single nanowire.

Enhancement in red emission at room temperature from europium doped ZnO nanowires by 1,10 phenanthroline-europium interface induced resonant excitations

Directory of Open Access Journals (Sweden)

Soumen Dhara

2017-02-01

Full Text Available We show that europium doped ZnO nanowires after surface modification with organic ligand, 1,10 phenanthroline (phen leads to strong red emission at 613 nm which is a characteristic emission from the atomic levels of Eu3+. Surface modification with phen leads to formation of phenanthroline-europium interface on the surface of the nanowires due to attachment of Eu3+ ions. After an optimized surface modification with phen, intensity of both the UV emission (band edge and red emission improved by two orders of magnitude at room temperature. We observed multiple energy transfer pathways to the energy levels of Eu3+ ions through the phenanthroline-europium interface, which found to be very effective to the significant enhancement of emission from the dopant Eu3+. This study shows a new insight in to the energy transfer process from phen to the europium doped ZnO system.

Structural and optical properties of ZnMgO nanostructures formed by Mg in-diffused ZnO nanowires

International Nuclear Information System (INIS)

Pan, C.-J.; Hsu, H.-C.; Cheng, H.-M.; Wu, C.-Y.; Hsieh, W.-F.

2007-01-01

ZnMgO nanostructures with wurtzite phase were prepared by thermal diffusion of Mg into the ZnO nanowires. As ZnO light-emitting devices have been operated by using ZnMgO layers as energy barrier layers to confine the carriers, it is essential to realize the characterization of ZnMgO particularly. In this work, the Mg content in Zn 1 -x Mg x O alloy determined by X-ray diffraction (XRD) and photoluminescence (PL) shows a good coincidence. The variation of lattice constant and the blueshift of near-band-edge emission indicate that Zn 2+ ions are successfully substituted by Mg 2+ ions in the ZnO lattice. In Raman-scattering studies, the change of E 2 (high) phonon line shape in ZnO:Mg nanostructures reveals the microscopic substitutional disorder. In addition to the host phonons of ZnO, two additional bands around 383 and 510 cm -1 are presumably attributed to the Mg-related vibrational modes. - Graphical abstract: We reported the synthesis of the ZnMgO nanostructures prepared by a simple vapor transport method. Magnesium-related anomalous modes are observed by Raman spectra for the first time in ZnMgO system

Conducting properties of nearly depleted ZnO nanowire UV sensors fabricated by dielectrophoresis

International Nuclear Information System (INIS)

García Núñez, C; García Marín, A; Piqueras, J; Pau, J L; Nanterne, P; Kung, P

2013-01-01

ZnO nanowires (NWs) with different radii (r NW ) have been aligned between pre-patterned electrodes using dielectrophoresis (DEP) for the fabrication of high gain UV sensors. The DEP conditions (voltage amplitude and frequency) and electrode material, geometry and size were optimized to enhance the efficiency during the DEP process. To understand the alignment mechanism of the ZnO NWs, the dielectrophoretic force (F DEP ) was analyzed as a function of the DEP conditions and NW dimensions. These studies showed that the DEP alignment process tends to trap NWs with a smaller radius. The effects of NW size on device performance were analyzed by means of I–V measurements in darkness and under illumination (200 nm NW decreases due to the reduction of the conduction volume, until saturation is reached for r NW 8 A W −1 (measured at 5 V and λ NW , presenting a clear blue-shift for NWs with a lower radius (r NW 2 reduces the dynamic range of the photoresponse due to a strong increase of the dark current. (paper)

Photoluminescence blue shift of indium phosphide nanowire networks with aluminum oxide coating

International Nuclear Information System (INIS)

Fryauf, David M.; Zhang, Junce; Norris, Kate J.; Diaz Leon, Juan J.; Oye, Michael M.; Kobayashi, Nobuhiko P.; Wei, Min

2014-01-01

This paper describes our finding that optical properties of semiconductor nanowires were modified by depositing a thin layer of metal oxide. Indium phosphide nanowires were grown by metal organic chemical vapor deposition on silicon substrates with gold catalyst resulting in three-dimensional nanowire networks, and optical properties were obtained from the collective nanowire networks. The networks were coated with an aluminum oxide thin film deposited by plasma-enhanced atomic layer deposition. We studied the dependence of the peak wavelength of photoluminescence spectra on the thickness of the oxide coatings. A continuous blue shift in photoluminescence spectra was observed when the thickness of the oxide coating was increased. The observed blue shift is attributed to the Burstein-Moss effect due to increased carrier concentration in the nanowire cores caused by repulsion from intrinsic negative fixed charges located at the inner oxide surface. Samples were further characterized by scanning electron microscopy, Raman spectroscopy, transmission electron microscopy, and selective area diffractometry to better understand the physical mechanisms for the blue shift. (copyright 2014 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Photoluminescence blue shift of indium phosphide nanowire networks with aluminum oxide coating

Energy Technology Data Exchange (ETDEWEB)

Fryauf, David M.; Zhang, Junce; Norris, Kate J.; Diaz Leon, Juan J.; Oye, Michael M.; Kobayashi, Nobuhiko P. [Nanostructured Energy Conversion Technology and Research (NECTAR), Advanced Studies Laboratories, University of California, Santa Cruz, CA (United States); Baskin School of Engineering, University of California Santa Cruz, Santa Cruz, CA (United States); NASA Ames Research Center, Moffett Field, CA (United States); Wei, Min [Baskin School of Engineering, University of California Santa Cruz, Santa Cruz, CA (United States); School of Micro-Electronics and Solid-Electronics, University of Electronic Science and Technology of China, Chengdu (China)

2014-07-15

This paper describes our finding that optical properties of semiconductor nanowires were modified by depositing a thin layer of metal oxide. Indium phosphide nanowires were grown by metal organic chemical vapor deposition on silicon substrates with gold catalyst resulting in three-dimensional nanowire networks, and optical properties were obtained from the collective nanowire networks. The networks were coated with an aluminum oxide thin film deposited by plasma-enhanced atomic layer deposition. We studied the dependence of the peak wavelength of photoluminescence spectra on the thickness of the oxide coatings. A continuous blue shift in photoluminescence spectra was observed when the thickness of the oxide coating was increased. The observed blue shift is attributed to the Burstein-Moss effect due to increased carrier concentration in the nanowire cores caused by repulsion from intrinsic negative fixed charges located at the inner oxide surface. Samples were further characterized by scanning electron microscopy, Raman spectroscopy, transmission electron microscopy, and selective area diffractometry to better understand the physical mechanisms for the blue shift. (copyright 2014 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Chemical bath deposition of ZnO nanowire-nanoparticle composite electrodes for use in dye-sensitized solar cells

Energy Technology Data Exchange (ETDEWEB)

Ku, C-H; Wu, J-J [Department of Chemical Engineering, National Cheng Kung University, Tainan 701, Taiwan (China)

2007-12-19

ZnO nanowire (NW)-layered basic zinc acetate (LBZA)/ZnO nanoparticle (NP) composite electrodes with different NP occupying extents have been synthesized using a simple wet-chemical route for use in dye-sensitized solar cells (DSSCs). By employing mercurochrome as the sensitizer, superior efficiencies ({eta}) of 1.27-2.37% are obtained using the ZnO NW-LBZA/ZnO NP composite electrodes composed of a 5.5 {mu}m thick NW array with different NP occupying extents in comparison with the ZnO NW DSSC ({eta} = 0.45%). It suggests that the ZnO NW-LBZA/ZnO NP composite films which possess a considerable enlarged surface area by NPs growth, without sacrificing electron transport efficiency of single-crystalline ZnO NWs at the same time, are promising photoanodes for use in DSSCs. In addition to the extent of NP occupation, the overall efficiency of the ZnO NW-LBZA/ZnO NP composite DSSC is also influenced by the thickness of the composite film as well as the LBZA fraction and the cracks within the composite. The fraction of LBZA affected by the NP growth period and post-annealing conditions is found to play a crucial role in electron transport through the composite anode. Up to now, a high efficiency DSSC of 3.2% is achieved using a mercurochrome-sensitized and 6.2 {mu}m thick NW-NP composite film.

Dramatically enhanced ultraviolet photosensing mechanism in a n-ZnO nanowires/i-MgO/n-Si structure with highly dense nanowires and ultrathin MgO layers

International Nuclear Information System (INIS)

Kim, Dong Chan; Jung, Byung Oh; Cho, Hyung Koun; Lee, Ju Ho; Lee, Jeong Yong; Lee, Jun Hee

2011-01-01

This study reports that the visible-blind ultraviolet (UV) photodetecting properties of ZnO nanowire based photodetectors were remarkably improved by introducing ultrathin insulating MgO layers between the ZnO nanowires and Si substrates. All layers were grown without pause by metal organic chemical vapor deposition and the density and vertical arrangement of the ZnO nanowires were strongly dependent on the thickness of the MgO layers. The sample in which an MgO layer with a thickness of 8 nm was inserted had high density nanowires with a vertical alignment and showed dramatically improved UV photosensing performance (photo-to-dark current ratio = 1344.5 and recovery time = 350 ms). The photoresponse spectrum revealed good visible-blind UV detectivity with a sharp cut off at 378 nm and a high UV/visible rejection ratio. A detailed discussion regarding the developed UV photosensing mechanism from the introduction of the i-MgO layers and highly dense nanowires in the n-ZnO nanowires/i-MgO/n-Si substrates structure is presented in this work.

A theoretical study on the effect of piezoelectric charges on the surface potential and surface depletion region of ZnO nanowires

International Nuclear Information System (INIS)

Purahmad, Mohsen; Stroscio, Michael A; Dutta, Mitra

2013-01-01

The electrostatic potential and depletion width in piezoelectric semiconductor nanowires are derived by considering a non-depleted region and a surface depleted region and solving the Poisson equation. By determining the piezoelectric-induced charge density, in terms of equivalent density of charges, the effect of piezoelectric charges on the surface depletion region and the distributed electric potential in nanowire have been investigated. The numerical results demonstrate that the ZnO NWs with a smaller radius have a larger surface depletion region which results in a stronger surface potential and depletion region perturbation by induced piezoelectric charges. (paper)

Template synthesis of indium nanowires using anodic aluminum oxide membranes.

Science.gov (United States)

Chen, Feng; Kitai, Adrian H

2008-09-01

Indium nanowires with diameters approximately 300 nm have been synthesized by a hydraulic pressure technique using anodic aluminum oxide (AAO) templates. The indium melt is injected into the AAO template and solidified to form nanostructures. The nanowires are dense, continuous and uniformly run through the entire approximately 60 microm thickness of the AAO template. X-ray diffraction (XRD) reveals that the nanowires are polycrystalline with a preferred orientation. SEM is performed to characterize the morphology of the nanowires.

Parameters Influencing the Growth of ZnO Nanowires as Efficient Low Temperature Flexible Perovskite-Based Solar Cells

Directory of Open Access Journals (Sweden)

Alex Dymshits

2016-01-01

Full Text Available Hybrid organic-inorganic perovskite has proved to be a superior material for photovoltaic solar cells. In this work we investigate the parameters influencing the growth of ZnO nanowires (NWs for use as an efficient low temperature photoanode in perovskite-based solar cells. The structure of the solar cell is FTO (SnO2:F-glass (or PET-ITO (In2O3·(SnO2 (ITO on, polyethylene terephthalate (PET/ZnAc seed layer/ZnO NWs/CH3NH3PbI3/Spiro-OMeTAD/Au. The influence of the growth rate and the diameter of the ZnO NWs on the photovoltaic performance were carefully studied. The ZnO NWs perovskite-based solar cell demonstrates impressive power conversion efficiency of 9.06% on a rigid substrate with current density over 21 mA/cm2. In addition, we successfully fabricated flexible perovskite solar cells while maintaining all fabrication processes at low temperature, achieving power conversion efficiency of 6.4% with excellent stability for over 75 bending cycles.

Efficiency enhancement of dye-sensitized solar cells by optimization of electrospun ZnO nanowire/nanoparticle hybrid photoanode and combined modification

International Nuclear Information System (INIS)

Song, Lixin; Du, Pingfan; Xiong, Jie; Ko, Frank; Cui, Can

2015-01-01

ZnO nanoparticles (ZNPs) and ZnO nanowires (ZNWs) were fabricated via electrospinning and calcination. The ZNPs and ZNWs were blended with different mass ratio by varying ZNWs from 0% to 100% and serviced as photoanodic film of dye-sensitized solar cells (DSSCs) via spin coating. The efficiency of these DSSCs reached a maximum of 2.6% at 20 wt% ZNWs. In order to improve the photovoltaic properties of ZNWs/ZNPs hybrid photoanodic film, the ZNWs/ZNPs hybrid film was modified by the incorporation of multi-walled carbon nanotubes (MWCNTs) into ZnO matrix including both ZNPs and ZNWs combined with TiCl 4 post-treatment. As a result, the efficiency of DSSCs increased from 2.6% to 3.8%, which is mainly attributed to the increased dye loading, faster electron transport, and less electron loss

Mechanism of oxidative stress involved in the toxicity of ZnO nanoparticles against eukaryotic cells

Directory of Open Access Journals (Sweden)

M. Saliani

2016-01-01

Full Text Available ZnO NPs (zinc oxide nanoparticles has generated significant scientific interest as a novel antibacterial and anticancer agent. Since oxidative stress is a critical determinant of ZnO NPs-induced damage, it is necessary to characterize their underlying mode of action. Different structural and physicochemical properties of ZnO NPs such as particle surface, size, shape, crystal structure, chemical position, and presence of metals can lead to changes in biological activities including ROS (reactive oxygen species production. However, there are some inconsistencies in the literature on the relation between the physicochemical features of ZnO NPs and their plausible oxidative stress mechanism. Herein, the possible oxidative stress mechanism of ZnO NPs was reviewed. This is worthy of further detailed evaluations in order to improve our understanding of vital NPs characteristics governing their toxicity. Therefore, this study focuses on the different reported oxidative stress paradigms induced by ZnO NPs including ROS generated by NPs, oxidative stress due to the NPs-cell interaction, and role of the particle dissolution in the oxidative damage. Also, this study tries to characterize and understand the multiple pathways involved in oxidative stress induced by ZnO NPs. Knowledge about different cellular signaling cascades stimulated by ZnO NPs lead to the better interpretation of the toxic influences induced by the cellular and acellular parameters. Regarding the potential benefits of toxic effects of ZnO NPs, in-depth evaluation of their toxicity mechanism and various effects of these nanoparticles would facilitate their implementation for biomedical applications.

Performance of ethanol electro-oxidation on Ni-Cu alloy nanowires through composition modulation.

Science.gov (United States)

Tian, Xi-Ke; Zhao, Xiao-Yu; Zhang, Li-de; Yang, Chao; Pi, Zhen-Bang; Zhang, Su-Xin

2008-05-28

To reduce the cost of the catalyst for direct ethanol fuel cells and improve its catalytic activity, highly ordered Ni-Cu alloy nanowire arrays have been fabricated successfully by differential pulse current electro-deposition into the pores of a porous anodic alumina membrane (AAMs). The energy dispersion spectrum, scanning and transmission electron microscopy were utilized to characterize the composition and morphology of the Ni-Cu alloy nanowire arrays. The results reveal that the nanowires in the array are uniform, well isolated and parallel to each other. The catalytic activity of the nanowire electrode arrays for ethanol oxidation was tested and the binary alloy nanowire array possesses good catalytic activity for the electro-oxidation of ethanol. The performance of ethanol electro-oxidation was controlled by varying the Cu content in the Ni-Cu alloy and the Ni-Cu alloy nanowire electrode shows much better stability than the pure Ni one.

Performance of ethanol electro-oxidation on Ni-Cu alloy nanowires through composition modulation

International Nuclear Information System (INIS)

Tian Xike; Zhao Xiaoyu; Yang Chao; Pi Zhenbang; Zhang Lide; Zhang Suxin

2008-01-01

To reduce the cost of the catalyst for direct ethanol fuel cells and improve its catalytic activity, highly ordered Ni-Cu alloy nanowire arrays have been fabricated successfully by differential pulse current electro-deposition into the pores of a porous anodic alumina membrane (AAMs). The energy dispersion spectrum, scanning and transmission electron microscopy were utilized to characterize the composition and morphology of the Ni-Cu alloy nanowire arrays. The results reveal that the nanowires in the array are uniform, well isolated and parallel to each other. The catalytic activity of the nanowire electrode arrays for ethanol oxidation was tested and the binary alloy nanowire array possesses good catalytic activity for the electro-oxidation of ethanol. The performance of ethanol electro-oxidation was controlled by varying the Cu content in the Ni-Cu alloy and the Ni-Cu alloy nanowire electrode shows much better stability than the pure Ni one

Fabrication and thermal oxidation of ZnO nano fibers prepared via electro spinning technique

International Nuclear Information System (INIS)

Baek, Jeongha; Park, Juyun; Kim, Don; Kang, Yongcheol; Koh, Sungwi; Kang, Jisoo

2012-01-01

Materials on the scale of nano scale have widely been used as research topics because of their interesting characteristics and aspects they bring into the field. Out of the many metal oxides, zinc oxide (ZnO) was chosen to be fabricated as nano fibers using the electro spinning method for potential uses of solar cells and sensors. After ZnO nano fibers were obtained, calcination temperature effects on the ZnO nano fibers were studied and reported here. The results of scanning electron microscopy (SEM) revealed that the aggregation of the ZnO nano fibers progressed by calcination. X-ray diffraction (XRD) study showed the hcp ZnO structure was enhanced by calcination at 873 and 1173 K. Transmission electron microscopy (TEM) confirmed the crystallinity of the calcined ZnO nano fibers. X-ray photoelectron spectroscopy (XPS) verified the thermal oxidation of Zn species by calcination in the nano fibers. These techniques have helped US deduce the facts that the diameter of ZnO increases as the calcination temperature was raised; the process of calcination affects the crystallinity of ZnO nano fibers, and the thermal oxidation of Zn species was observed as the calcination temperature was raised

Fast Response and High Sensitivity of ZnO Nanowires-Cobalt Phthalocyanine Heterojunction Based H2S Sensor.

Science.gov (United States)

Kumar, Ashwini; Samanta, Soumen; Singh, Ajay; Roy, Mainak; Singh, Surendra; Basu, Saibal; Chehimi, Mohmad M; Roy, Kallol; Ramgir, Niranjan; Navaneethan, M; Hayakawa, Y; Debnath, Anil K; Aswal, Dinesh K; Gupta, Shiv K

2015-08-19

The room temperature chemiresistive response of n-type ZnO nanowire (ZnO NWs) films modified with different thicknesses of p-type cobalt phthalocyanine (CoPc) has been studied. With increasing thickness of CoPc (>15 nm), heterojunction films exhibit a transition from n- to p-type conduction due to uniform coating of CoPc on ZnO. The heterojunction films prepared with a 25 nm thick CoPc layer exhibit the highest response (268% at 10 ppm of H2S) and the fastest response (26 s) among all samples. The X-ray photoelectron spectroscopy and work function measurements reveal that electron transfer takes place from ZnO to CoPc, resulting in formation of a p-n junction with a barrier height of 0.4 eV and a depletion layer width of ∼8.9 nm. The detailed XPS analysis suggests that these heterojunction films with 25 nm thick CoPc exhibit the least content of chemisorbed oxygen, enabling the direct interaction of H2S with the CoPc molecule, and therefore exhibit the fastest response. The improved response is attributed to the high susceptibility of the p-n junctions to the H2S gas, which manipulates the depletion layer width and controls the charge transport.

Facile Hydrothermal Preparation of ZNO/CO3O4 Heterogeneous Nanostructures and its Photovoltaic Effect

Science.gov (United States)

Wei, Fanan; Jiang, Minlin; Liu, Lianqing

2015-07-01

Photovoltaic technology offers great potential in the replacement of fossil fuel resources, but still suffers from high device fabrication cost. Herein, we attempted to provide a solution to these issues with heterogeneous nanostructures. Firstly, Zinc oxide (ZnO)/cobalt oxide (Co3O4) heterojunction nanowires are prepared through facile fabrication methods. By assembling Co(OH)2 nanoplates on ZnO nanowire arrays, the ZnO/Co3O4 heterogeneous nanostructures are uniformly synthesized on ITO coated glass and wafer. Current (I)-voltage (V) measurement through conductive atomic force microscope shows excellent photovoltaic effect. And, the heterojunction nanostructures shows unprecedented high open circuit voltage. Therefore, the potential application of the heterogeneous nanostructures in solar cells is demonstrated.

EDTA-assisted synthesis of rose-like ZnO architectures

Energy Technology Data Exchange (ETDEWEB)

Li, Zhen [Institute of Nanochemistry and Nanobiology, Shanghai University, Shanghai 201800 (China); Shanghai Applied Radiation Institute, Shanghai University, Shanghai 201800 (China); Fang, Yaoguo [Institute of Nanochemistry and Nanobiology, Shanghai University, Shanghai 201800 (China); Peng, Liwei; Wu, Minghong [Shanghai Applied Radiation Institute, Shanghai University, Shanghai 201800 (China); Pan, Dengyu

2010-10-15

Rose-like ZnO nanostructures were prepared by a low-temperature solution route with assistance of ethylenediaminetetraacetic acid disodium (EDTA-2Na). The morphology of ZnO nanostructures was found to change from nanowire arrays to rose- and tower-like architectures with increasing the molar ratio of EDTA-2Na/Zn{sup 2+}. Also, the shape evolution of ZnO nanostructures with time was observed from flat nanosheets to wrinkled nanosheets and to rose-like nanostructures. EDTA-2Na as a strong complexing agent was found to play a key role in the shape evolution. Photoluminescence spectra show that the rose-like ZnO architectures have more defects than the nanowire arrays. (copyright 2010 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

A supercritical carbon dioxide plasma process for preparing tungsten oxide nanowires

International Nuclear Information System (INIS)

Kawashima, Ayato; Nomura, Shinfuku; Toyota, Hiromichi; Takemori, Toshihiko; Mukasa, Shinobu; Maehara, Tsunehiro

2007-01-01

A supercritical carbon dioxide (CO 2 ) plasma process for fabricating one-dimensional tungsten oxide nanowires coated with amorphous carbon is presented. High-frequency plasma was generated in supercritical carbon dioxide at 20 MPa by using tungsten electrodes mounted in a supercritical cell, and subsequently an organic solvent was introduced with supercritical carbon dioxide into the plasma. Electron microscopy and Raman spectroscopy investigations of the deposited materials showed the production of tungsten oxide nanowires with or without an outer layer. The nanowires with an outer layer exhibited a coaxial structure with an outer concentric layer of amorphous carbon and an inner layer of tungsten oxide with a thickness and diameter of 20-30 and 10-20 nm, respectively

Heterogeneous metal-oxide nanowire micro-sensor array for gas sensing

International Nuclear Information System (INIS)

DeMeo, Dante; E Vandervelde, Thomas; MacNaughton, Sam; Sonkusale, Sameer; Wang, Zhilong; Zhang, Xinjie

2014-01-01

Vanadium oxide, manganese oxide, tungsten oxide, and nickel oxide nanowires were investigated for their applicability as chemiresistive gas sensors. Nanowires have excellent surface-to-volume ratios which yield higher sensitivities than bulk materials. Sensing elements consisting of these materials were assembled in an array to create an electronic nose platform. Dielectrophoresis was used to position the nanomaterials onto a microfabricated array of electrodes, which was subsequently mounted onto a leadless chip carrier and printed circuit board for rapid testing. Samples were tested in an enclosed chamber with vapors of acetone, isopropanol, methanol, and aqueous ammonia. The change in resistance of each assembly was measured. Responses varied between nanowire compositions, each demonstrating unique and repeatable responses to different gases; this enabled direct detection of the gases from the ensemble response. Sensitivities were calculated based on the fractional resistance change in a saturated environment and ranged from 6 × 10 −4 to 2 × 10 −5 %change ppm −1 . (papers)

Microstructure development in zinc oxide nanowires and iron oxohydroxide nanotubes by cathodic electrodeposition in nanopores

NARCIS (Netherlands)

Maas, M.G.; Rodijk, E.J.B.; Maijenburg, A.W.; Blank, David H.A.; ten Elshof, Johan E.

2011-01-01

The cathodic electrodeposition of crystalline ZnO nanowires and amorphous FeO(OH) nanotubes in polycarbonate track-etched membranes with pore diameters of 50–200 nm is reported. Nitrate was used as a sacrificial precursor for the electrochemical generation of hydroxyl ions that raised the pH of the

Electrical and structural properties of ZnO synthesized via infiltration of lithographically defined polymer templates

International Nuclear Information System (INIS)

Nam, Chang-Yong; Stein, Aaron; Kisslinger, Kim; Black, Charles T.

2015-01-01

We investigate the electrical and structural properties of infiltration-synthesized ZnO. In-plane ZnO nanowire arrays with prescribed positional registrations are generated by infiltrating diethlyzinc and water vapor into lithographically defined SU-8 polymer templates and removing organic matrix by oxygen plasma ashing. Transmission electron microscopy reveals that homogeneously amorphous as-infiltrated polymer templates transform into highly nanocrystalline ZnO upon removal of organic matrix. Field-effect transistor device measurements show that the synthesized ZnO after thermal annealing displays a typical n-type behavior, ∼10 19  cm −3 carrier density, and ∼0.1 cm 2 V −1 s −1 electron mobility, reflecting highly nanocrystalline internal structure. The results demonstrate the potential application of infiltration synthesis in fabricating metal oxide electronic devices

High performance non-volatile ferroelectric copolymer memory based on a ZnO nanowire transistor fabricated on a transparent substrate

International Nuclear Information System (INIS)

Nedic, Stanko; Welland, Mark; Tea Chun, Young; Chu, Daping; Hong, Woong-Ki

2014-01-01

A high performance ferroelectric non-volatile memory device based on a top-gate ZnO nanowire (NW) transistor fabricated on a glass substrate is demonstrated. The ZnO NW channel was spin-coated with a poly (vinylidenefluoride-co-trifluoroethylene) (P(VDF-TrFE)) layer acting as a top-gate dielectric without buffer layer. Electrical conductance modulation and memory hysteresis are achieved by a gate electric field induced reversible electrical polarization switching of the P(VDF-TrFE) thin film. Furthermore, the fabricated device exhibits a memory window of ∼16.5 V, a high drain current on/off ratio of ∼10 5 , a gate leakage current below ∼300 pA, and excellent retention characteristics for over 10 4 s

Exogenous Gene Integration for Microalgal Cell Transformation Using a Nanowire-Incorporated Microdevice.

Science.gov (United States)

Bae, Sunwoong; Park, Seunghye; Kim, Jung; Choi, Jong Seob; Kim, Kyung Hoon; Kwon, Donguk; Jin, EonSeon; Park, Inkyu; Kim, Do Hyun; Seo, Tae Seok

2015-12-16

Superior green algal cells showing high lipid production and rapid growth rate are considered as an alternative for the next generation green energy resources. To achieve the biomass based energy generation, transformed microalgae with superlative properties should be developed through genetic engineering. Contrary to the normal cells, microalgae have rigid cell walls, so that target gene delivery into cells is challengeable. In this study, we report a ZnO nanowire-incorporated microdevice for a high throughput microalgal transformation. The proposed microdevice was equipped with not only a ZnO nanowire in the microchannel for gene delivery into cells but also a pneumatic polydimethylsiloxane (PDMS) microvalve to modulate the cellular attachment and detachment from the nanowire. As a model, hygromycin B resistance gene cassette (Hyg3) was functionalized on the hydrothermally grown ZnO nanowires through a disulfide bond and released into green algal cells, Chlamydomonas reinhardtii, by reductive cleavage. During Hyg3 gene delivery, a monolithic PDMS membrane was bent down, so that algal cells were pushed down toward ZnO nanowires. The supply of vacuum in the pneumatic line made the PDMS membrane bend up, enabling the gene delivered algal cells to be recovered from the outlet of the microchannel. We successfully confirmed Hyg3 gene integrated in microalgae by amplifying the inserted gene through polymerase chain reaction (PCR) and DNA sequencing. The efficiency of the gene delivery to algal cells using the ZnO nanowire-incorporated microdevice was 6.52 × 10(4)- and 9.66 × 10(4)-fold higher than that of a traditional glass bead beating and electroporation.

High-gain subnanowatt power consumption hybrid complementary logic inverter with WSe2 nanosheet and ZnO nanowire transistors on glass.

Science.gov (United States)

Shokouh, Seyed Hossein Hosseini; Pezeshki, Atiye; Ali Raza, Syed Raza; Lee, Hee Sung; Min, Sung-Wook; Jeon, Pyo Jin; Shin, Jae Min; Im, Seongil

2015-01-07

A 1D-2D hybrid complementary logic inverter comprising of ZnO nanowire and WSe2 nanosheet field-effect transistors (FETs) is fabricated on glass, which shows excellent static and dynamic electrical performances with a voltage gain of ≈60, sub-nanowatt power consumption, and at least 1 kHz inverting speed. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Fabrication of a P3HT-ZnO Nanowires Gas Sensor Detecting Ammonia Gas

Directory of Open Access Journals (Sweden)

Chin-Guo Kuo

2017-12-01

Full Text Available In this study, an organic-inorganic semiconductor gas sensor was fabricated to detect ammonia gas. An inorganic semiconductor was a zinc oxide (ZnO nanowire array produced by atomic layer deposition (ALD while an organic material was a p-type semiconductor, poly(3-hexylthiophene (P3HT. P3HT was suitable for the gas sensing application due to its high hole mobility, good stability, and good electrical conductivity. In this work, P3HT was coated on the zinc oxide nanowires by the spin coating to form an organic-inorganic heterogeneous interface of the gas sensor for detecting ammonia gas. The thicknesses of the P3HT were around 462 nm, 397 nm, and 277 nm when the speeds of the spin coating were 4000 rpm, 5000 rpm, and 6000 rpm, respectively. The electrical properties and sensing characteristics of the gas sensing device at room temperature were evaluated by Hall effect measurement and the sensitivity of detecting ammonia gas. The results of Hall effect measurement for the P3HT-ZnO nanowires semiconductor with 462 nm P3HT film showed that the carrier concentration and the mobility were 2.7 × 1019 cm−3 and 24.7 cm2∙V−1∙s−1 respectively. The gas sensing device prepared by the P3HT-ZnO nanowires semiconductor had better sensitivity than the device composed of the ZnO film and P3HT film. Additionally, this gas sensing device could reach a maximum sensitivity around 11.58 per ppm.

Electrochemical fabrication of CdS/Co nanowire arrays in porous aluminum oxide templates

CERN Document Server

Yoon, C H

2002-01-01

A procedure for preparing semiconductor/metal nanowire arrays is described, based on a template method which entails electrochemical deposition into nanometer-wide parallel pores of anodic aluminum oxide films on aluminum. Aligned CdS/Co heterostructured nanowires have been prepared by ac electrodeposition in the anodic aluminum oxide templates. By varying the preparation conditions, a variety of CdS/Co nanowire arrays were fabricated, whose dimensional properties could be adjusted.

Three-dimensional mesoscale heterostructures of ZnO nanowire arrays epitaxially grown on CuGaO2 nanoplates as individual diodes.

Science.gov (United States)

Forticaux, Audrey; Hacialioglu, Salih; DeGrave, John P; Dziedzic, Rafal; Jin, Song

2013-09-24

We report a three-dimensional (3D) mesoscale heterostructure composed of one-dimensional (1D) nanowire (NW) arrays epitaxially grown on two-dimensional (2D) nanoplates. Specifically, three facile syntheses are developed to assemble vertical ZnO NWs on CuGaO2 (CGO) nanoplates in mild aqueous solution conditions. The key to the successful 3D mesoscale integration is the preferential nucleation and heteroepitaxial growth of ZnO NWs on the CGO nanoplates. Using transmission electron microscopy, heteroepitaxy was found between the basal planes of CGO nanoplates and ZnO NWs, which are their respective (001) crystallographic planes, by the observation of a hexagonal Moiré fringes pattern resulting from the slight mismatch between the c planes of ZnO and CGO. Careful analysis shows that this pattern can be described by a hexagonal supercell with a lattice parameter of almost exactly 11 and 12 times the a lattice constants for ZnO and CGO, respectively. The electrical properties of the individual CGO-ZnO mesoscale heterostructures were measured using a current-sensing atomic force microscopy setup to confirm the rectifying p-n diode behavior expected from the band alignment of p-type CGO and n-type ZnO wide band gap semiconductors. These 3D mesoscale heterostructures represent a new motif in nanoassembly for the integration of nanomaterials into functional devices with potential applications in electronics, photonics, and energy.

Solvothermal Synthesis of One-Dimensional Transition Metal Doped ZnO Nanocrystals and Their Applications in Smart Window Devices

OpenAIRE

Šutka, A; Timusk, M; Kisand, V; Saal, K; Joost, U; Lõhmus, R

2015-01-01

Oxide semiconductor nanowire (NW) suspension based devices have been attracted growing interest in smart window applications due to their great controllability of light transmittance, simplicity and long term stability. Recently, we demonstrated smart window device using the suspension of electrospun TiO2 or solvothermally synthesized ZnO NWs in viscous polydimethylsiloxane (PDMS) matrix. The operating principle of the oxide semiconductor NW and PDMS device is based on the alterable orientati...

A comparison study between ZnO nanorods coated with graphene oxide and reduced graphene oxide

International Nuclear Information System (INIS)

Ding, Jijun; Wang, Minqiang; Deng, Jianping; Gao, Weiyin; Yang, Zhi; Ran, Chenxin; Zhang, Xiangyu

2014-01-01

Highlights: • Optical properties between ZnO-GO and ZnO-RGO composites were compared. • Photoluminescence quenching was observed in ZnO-GO composites. • We obtained enhanced photoluminescence in ZnO-RGO composites. -- Abstract: ZnO nanorods (ZnO NRs) coated with graphene oxide (ZnO-GO) and reduced graphene oxide sheets (ZnO-RGO) were prepared on indium tin oxide (ITO) substrates. The crystal structures, morphology and optical properties were analyzed by using X-ray diffraction (XRD) pattern, scanning electron microscopy (SEM) images, absorption spectra and photoluminescence (PL) spectra, respectively. A comparison between PL properties from ZnO-GO and ZnO-RGO were studied. Results indicated that the peak at 442 nm and a broad band at 450–600 nm of ZnO NRs show PL quenching after coating with GO sheets. As coating with RGO sheets, the extent of PL quenching increases. It is interesting to note that as ZnO NRs coated with RGO sheets, the intensity of PL peak at 390 nm significantly increased. The enhanced PL emission research in ZnO-RGO is directed toward development of the “nextgeneration” optoelectronics devices related with graphene materials

Fabrication and Characterization of ZnO Nanowire-based Piezoelectric Nanogenerators for Low Frequency Mechanical Energy Harvesting

Science.gov (United States)

Poulin-Vittrant, G.; Oshman, C.; Opoku, C.; Dahiya, A. S.; Camara, N.; Alquier, D.; Hue, L.-P. Tran Huu; Lethiecq, M.

The present work investigates the possibility to charge a Lithium micro-battery (LiB) via direct conversion of ambient mechanical energy into electricity using piezoelectric ZnO nanowire (NW) based microgenerators (PGs). An estimate is provided for the power levels at the different stages of mechanical-to-electrical energy conversion chain, in the following areas: (1) PG output, (2) power management block and (3) LiB storage unit. Also covered in this work is the synthesis, which is a prerequisite for realising such PGs. ZnO NWs of 2 μm in length and 200 nm in diameter have been grown using a low temperature (PET substrates (25 × 25 mm2). Substrates containing bi-layer metal layers with dissimilar electro-negativities functioned as a galvanic cell in the growth nutrients, which acted as an electrolyte medium. This necessitated ZnO NWs growth on conductive surfaces, even in the absence of seed layers and/or substrate with specific lattice parameters. Finally, the assembly steps undertaken to realise the fully functional PGs are discussed, and the performances of the final PG are described thereafter. Subjecting such devices to a 10 Hz sinusoidal bending force resulted in a measured PG output of ∼56 mV peak to peak, on 1 MΩ resistive load.

In situ ZnO nanowire growth to promote the PVDF piezo phase and the ZnO-PVDF hybrid self-rectified nanogenerator as a touch sensor.

Science.gov (United States)

Li, Zetang; Zhang, Xu; Li, Guanghe

2014-03-28

A PVDF-ZnO nanowires (NWs) hybrid generator (PZHG) was designed. A simple, cost effective method to produce the PVDF β phase by nano force is introduced. With the ZnO NWs growing, the in situ nano extension force promotes the phase change. A theoretical analysis of the ZnO NWs acting as a self-rectifier of the nano generator is established. The ZnO NWs acted as a self-adjustment diode to control the current output of the PZHG by piezo-electric and semi-conductive effects. Based on the self-controllability of the piezoelectric output, three kinds of finger touching are distinguished by the output performances of the PZHG, which is applicable to an LCD touch pad.

On-chip microplasma reactors using carbon nanofibres and tungsten oxide nanowires as electrodes

NARCIS (Netherlands)

Agiral, A.; Groenland, A.W.; Chinthaginjala, J.K.; Kumar Chinthaginjala, J.; Seshan, Kulathuiyer; Lefferts, Leonardus; Gardeniers, Johannes G.E.

2008-01-01

Carbon nanofibres (CNFs) and tungsten oxide (W18O49) nanowires have been incorporated into a continuous flow type microplasma reactor to increase the reactivity and efficiency of the barrier discharge at atmospheric pressure. CNFs and tungsten oxide nanowires were characterized by high-resolution

Photoconductivity of Germanium Nanowire Arrays Incorporated in Anodic Aluminum Oxide

International Nuclear Information System (INIS)

Polyakov, B; Prikulis, J; Grigorjeva, L; Millers, D; Daly, B; Holmes, J D; Erts, D

2007-01-01

Photoconductivity of germanium nanowire arrays of 50 and 100 nm diameter incorporated into Anodic Aluminum Oxide (AAO) membranes illuminated with visible light is investigated. Photocurrent response to excitation radiation with time constants faster than 10 -4 s were governed by absorption of incident light by nanowires, while photokinetics with time constants of the order of 10 -3 s originates from the photoluminescence of the AAO matrix. Possible applications of nanowire arrays inside AAO as photoresistors are discussed

Effects of external surface charges on the enhanced piezoelectric potential of ZnO and AlN nanowires and nanotubes

Directory of Open Access Journals (Sweden)

Seong Min Kim

2012-12-01

Full Text Available We theoretically investigate external surface charge effects on piezoelectric potential of ZnO and AlN nanowires (NWs and nanotubes (NTs under uniform compression. The free carrier depletion caused by negative surface charges via surface functionalization on vertically compressed ZnO and AlN NWs/NTs is simulated using finite element calculation; this indicates the enhancement of piezoelectric potential is due to the free carriers (electrons being fully depleted at the critical surface charge density. Numerical simulations reveal that full coverage of surface charges surrounding the NTs increases the piezoelectric output potential exponentially within a relatively smaller range of charge density compared to the case of NWs for a typical donor concentration (∼1017 cm−3. The model can be used to design functional high-power semiconducting piezoelectric nanogenerators.

Enhanced photocatalytic performance of ZnO nanostructures by electrochemical hybridization with graphene oxide

Science.gov (United States)

Pruna, A.; Wu, Z.; Zapien, J. A.; Li, Y. Y.; Ruotolo, A.

2018-05-01

Synthesis of zinc oxide (ZnO) nanostructures is reported by electrochemical deposition from an aqueous electrolyte in presence of graphene oxide (GO) with varying oxidation degree. The properties of hybrids were investigated by scanning electron microscopy, X-ray diffraction, Raman, Fourier-Transform Infrared and X-ray photoelectron spectroscopy techniques and photocatalytic measurements. The results indicated the electrodeposition of ZnO in presence of GO with increased oxygen content led to marked differences in the morphology while Raman measurements indicated an increased defect level both in the ZnO and the electrochemically reduced GO (ErGO) within the hybrids. The decrease in C/O atomic ratio of GO (from 0.79 to 0.71) employed for the electrodeposition of ZnO resulted in an increase in photocatalytic efficiency for methylene blue degradation under UV irradiation from 4-folds to 10-folds with respect to non-hybridized ZnO. The observed synergetic effect of cathodic deposition potential and oxygen content in GO towards improving the photocatalytic activity of immobilized ZnO is expected to contribute to further development of more effective deposition approaches for the preparation of high performance hybrid nanostructures.

Catalyst-free fabrication of novel ZnO/CuO core-Shell nanowires heterojunction: Controlled growth, structural and optoelectronic properties

Science.gov (United States)

Khan, Muhammad Arif; Wahab, Yussof; Muhammad, Rosnita; Tahir, Muhammad; Sakrani, Samsudi

2018-03-01

Development of controlled growth and vertically aligned ZnO/CuO core-shell heterojunction nanowires (NWs) with large area by a catalyst free vapor deposition and oxidation approach has been investigated. Structural characterization reveals successful fabrication of a core ZnO nanowire having single crystalline hexagonal wurtzite structure along [002] direction and CuO nanostructure shell with thickness (8-10 nm) having polycrystalline monoclinic structure. The optical property analysis suggests that the reflectance spectrum of ZnO/CuO heterostructure nanowires is decreased by 18% in the visible range, which correspondingly shows high absorption in this region as compared to pristine ZnO nanowires. The current-voltage (I-V) characteristics of core-shell heterojunction nanowires measured by conductive atomic force microscopy (C-AFM) shows excellent rectifying behavior, which indicates the characteristics of a good p-n junction. The high-resolution transmission electron microscopy (HRTEM) has confirmed the sharp junction interface between the core-shell heterojunction nanowire arrays. The valence band offset and conduction band offset at ZnO/CuO heterointerfaces are measured to be 2.4 ± 0.05 and 0.23 ± 0.005 eV respectively, using X-ray photoelectron spectroscopy (XPS) and a type-II band alignment structure is found. The results of this study contribute to the development of new advanced device heterostructures for solar energy conversion and optoelectronics applications.

Preparation of highly aligned silicon oxide nanowires with stable intensive photoluminescence

International Nuclear Information System (INIS)

Duraia, El-Shazly M.; Mansurov, Z.A.; Tokmolden, S.; Beall, Gary W.

2010-01-01

In this work we report the successful formation of highly aligned vertical silicon oxide nanowires. The source of silicon was from the substrate itself without any additional source of silicon. X-ray measurement demonstrated that our nanowires are amorphous. Photoluminescence measurements were conducted through 18 months and indicated that there is a very good intensive emission peaks near the violet regions. The FTIR measurements indicated the existence of peaks at 463, 604, 795 and a wide peak at 1111 cm -1 and this can be attributed to Si-O-Si and Si-O stretching vibrations. We also report the formation of the octopus-like silicon oxide nanowires and the growth mechanism of these structures was discussed.

Preparation of highly aligned silicon oxide nanowires with stable intensive photoluminescence

Energy Technology Data Exchange (ETDEWEB)

Duraia, El-Shazly M., E-mail: duraia_physics@yahoo.co [Suez Canal University, Faculty of Science, Physics Department, Ismailia (Egypt); Al-Farabi Kazakh National University, Almaty (Kazakhstan); Institute of Physics and Technology, 11 Ibragimov Street, 050032 Almaty (Kazakhstan); Mansurov, Z.A. [Al-Farabi Kazakh National University, Almaty (Kazakhstan); Tokmolden, S. [Institute of Physics and Technology, 11 Ibragimov Street, 050032 Almaty (Kazakhstan); Beall, Gary W. [Texas State University-San Marcos, Department of Chemistry and Biochemistry, 601 University Dr., San Marcos, TX 78666 (United States)

2010-02-15

In this work we report the successful formation of highly aligned vertical silicon oxide nanowires. The source of silicon was from the substrate itself without any additional source of silicon. X-ray measurement demonstrated that our nanowires are amorphous. Photoluminescence measurements were conducted through 18 months and indicated that there is a very good intensive emission peaks near the violet regions. The FTIR measurements indicated the existence of peaks at 463, 604, 795 and a wide peak at 1111 cm{sup -1} and this can be attributed to Si-O-Si and Si-O stretching vibrations. We also report the formation of the octopus-like silicon oxide nanowires and the growth mechanism of these structures was discussed.

Facile Conversion Synthesis of Densely-Formed Branched ZnO-Nanowire Arrays for Quantum-Dot-Sensitized Solar Cells

International Nuclear Information System (INIS)

Lee, Woojin; Kang, Suji; Hwang, Taehyun; Kim, Kunsu; Woo, Hyungsub; Lee, Byungho; Kim, Jaewon; Kim, Jinhyun; Park, Byungwoo

2015-01-01

Highlights: •3-D hierarchically branched ZnO nanowires by a facile synthesis with seed nucleation. •Nanobranching enhances the efficiency by a factor of two compared with the bare QDSC. •Attributed to the increased sensitizer by ∼80% and decreased transmittance by ∼17%. •Optimized nanostructures correlate with the light-harvesting and carrier-collection efficiencies. -- Abstract: An effective way of synthesizing densely-formed branched ZnO-nanowire arrays was developed by a straightforward conversion reaction of ZnS into ZnO. Hierarchically structured ZnO nanowires are utilized for quantum-dot-sensitized solar cells (QDSCs), having resulted in the conversion-efficiency enhancement by a factor of two compared to the bare ZnO nanowires. This is attributed to the increased CdS-quantum-dot sensitizer by ∼80% and decreased diffused transmittance by ∼17%, induced by the densely-formed branched nanowires. The correlations between the branched nanostructures and photovoltaic performances are systematically investigated in terms of light absorption, charge-transfer resistance, and carrier lifetime. This facile and controllable branched nanowire synthesis is anticipated to be applicable to other semiconductor photoanodes for efficient light harvesting and charge collecting properties

Materials and Devices Research of PPV-ZnO Nanowires for Heterojunction Solar Cells

Directory of Open Access Journals (Sweden)

Zhang Xiao-Zhou

2012-01-01

Full Text Available Bulk heterojunction photovoltaic devices, which use the conjugated polymer poly(2-methoxyl-5-(2′-ethylhexyloxy-1,4-phenylenevinylene (MEH-PPV as the electron donor and crystalline ZnO nanowires as the electron acceptor, have been studied in this work. The ZnO nanowires were prepared through a chemical vapor deposition mechanism. The dissolved MEH-PPV polymer was spin-coated onto the nanowires. The scanning electron microscope images showed that the ZnO nanowires were covered with a single layer of the polymer, and these materials were used to design a heterojunction solar cell. This solar cell displayed improved performance compared with the devices that were made from only the MEH-PPV polymer. This observed improvement is correlated with the improved electron transport that is perpendicular to the plane of the film. A solar power conversion efficiency of 1.37% was achieved under an AM1.5 illumination.

Improved Long-Term Stability of Transparent Conducting Electrodes Based on Double-Laminated Electrosprayed Antimony Tin Oxides and Ag Nanowires

Directory of Open Access Journals (Sweden)

Koo B.-R.

2017-06-01

Full Text Available We fabricated double-laminated antimony tin oxide/Ag nanowire electrodes by spin-coating and electrospraying. Compared to pure Ag nanowire electrodes and single-laminated antimony tin oxide/Ag nanowire electrodes, the double-laminated antimony tin oxide/Ag nanowire electrodes had superior transparent conducting electrode performances with sheet resistance ~19.8 Ω/□ and optical transmittance ~81.9%; this was due to uniform distribution of the connected Ag nanowires because of double lamination of the metallic Ag nanowires without Ag aggregation despite subsequent microwave heating at 250°C. They also exhibited excellent and superior long-term chemical and thermal stabilities and adhesion to substrate because double-laminated antimony tin oxide thin films act as the protective layers between Ag nanowires, blocking Ag atoms penetration.

Synthesis and characterization of thermally oxidized ZnO films

Indian Academy of Sciences (India)

Administrator

Synthesis and characterization of thermally oxidized ZnO films. A P RAMBU1,* and N IFTIMIE2 .... R. −. Δ. = = (1) where Ra is the sensor resistance in the air and Rg is the .... ple, Aida and coworkers (2006) reported that the total oxidation is ...

Design of Highly Selective Gas Sensors via Physicochemical Modification of Oxide Nanowires: Overview

Directory of Open Access Journals (Sweden)

Hyung-Sik Woo

2016-09-01

Full Text Available Strategies for the enhancement of gas sensing properties, and specifically the improvement of gas selectivity of metal oxide semiconductor nanowire (NW networks grown by chemical vapor deposition and thermal evaporation, are reviewed. Highly crystalline NWs grown by vapor-phase routes have various advantages, and thus have been applied in the field of gas sensors over the years. In particular, n-type NWs such as SnO2, ZnO, and In2O3 are widely studied because of their simple synthetic preparation and high gas response. However, due to their usually high responses to C2H5OH and NO2, the selective detection of other harmful and toxic gases using oxide NWs remains a challenging issue. Various strategies—such as doping/loading of noble metals, decorating/doping of catalytic metal oxides, and the formation of core–shell structures—have been explored to enhance gas selectivity and sensitivity, and are discussed herein. Additional methods such as the transformation of n-type into p-type NWs and the formation of catalyst-doped hierarchical structures by branch growth have also proven to be promising for the enhancement of gas selectivity. Accordingly, the physicochemical modification of oxide NWs via various methods provides new strategies to achieve the selective detection of a specific gas, and after further investigations, this approach could pave a new way in the field of NW-based semiconductor-type gas sensors.

Photo-driven autonomous hydrogen generation system based on hierarchically shelled ZnO nanostructures

International Nuclear Information System (INIS)

Kim, Heejin; Yong, Kijung

2013-01-01

A quantum dot semiconductor sensitized hierarchically shelled one-dimensional ZnO nanostructure has been applied as a quasi-artificial leaf for hydrogen generation. The optimized ZnO nanostructure consists of one dimensional nanowire as a core and two-dimensional nanosheet on the nanowire surface. Furthermore, the quantum dot semiconductors deposited on the ZnO nanostructures provide visible light harvesting properties. To realize the artificial leaf, we applied the ZnO based nanostructure as a photoelectrode with non-wired Z-scheme system. The demonstrated un-assisted photoelectrochemical system showed the hydrogen generation properties under 1 sun condition irradiation. In addition, the quantum dot modified photoelectrode showed 2 mA/cm 2 current density at the un-assisted condition

Semiconductor Nanowires and Nanotubes for Energy Conversion

Science.gov (United States)

Fardy, Melissa Anne

Se nanowires allowed their thermoelectric properties to be controllably tuned by increasing their carrier concentration or hole mobility. After optimal annealing, single PbSe nanowires exhibited a thermoelectric figure of merit (ZT) of 0.12 at 300 K. In addition, using a field-effect gated device, the Seebeck coefficient of single PbSe nanowires could be tuned from 64 to 193 muV˙K-1. This direct electrical field control of the electrical conductivity and Seebeck coefficient suggests a powerful strategy for optimizing ZT in thermoelectric devices and these results represent the first demonstration of field-effect modulation of the thermoelectric figure of merit in a single semiconductor nanowire. This novel strategy for thermoelectric property modulation could prove especially important in optimizing the thermoelectric properties of semiconductors where reproducible doping is difficult to achieve. Recent theoretical work has shown large enhancements in ZT for single-crystal nanowires containing nanoscale interfaces along their lengths. M2O3(ZnO) n ( M = In, Ga, Fe) superlattice nanowires were synthesized via a novel solid-state diffusion approach to investigate this possible enhancement. Using atomic resolution Z-contrast STEM imaging a detailed structural analysis was performed on In2-xGaxO3(ZnO) n nanowires, leading to the discovery that octahedral inclusions within the superlattice structure are likely generated through a defect-assisted process. Single-nanowire thermal and electrical measurements on In2-x GaxO3(ZnO)n reveal a simultaneous improvement in all contributing factors to the thermoelectric figure of merit, giving an order of magnitude enhancement over similar bulk materials at room temperature. This is the first report of enhancement of all three thermoelectric parameters (Seebeck coefficient, electrical conductivity, and thermal resistivity) for a nanowire system. Photoelectrochemical water splitting is another exciting renewable energy application that can

Enhanced field emission of ZnO nanoneedle arrays via solution etching at room temperature

DEFF Research Database (Denmark)

Ma, Huanming; Qin, Zhiwei; Wang, Zaide

2017-01-01

ZnO nanoneedle arrays (ZnO nns) were synthesized by a facile two-step solution-phase method based on the etching of pre-synthesized ZnO nanowire arrays (ZnO nws) with flat ends at room temperature. Field emission measurement results showed that the turn-on electronic fields of ZnO nns and nws wer...

Native oxide formation on pentagonal copper nanowires: A TEM study

Science.gov (United States)

Hajimammadov, Rashad; Mohl, Melinda; Kordas, Krisztian

2018-06-01

Hydrothermally synthesized copper nanowires were allowed to oxidize in air at room temperature and 30% constant humidity for the period of 22 days. The growth of native oxide layer was followed up by high-resolution transmission electron microscopy and diffraction to reveal and understand the kinetics of the oxidation process. Copper oxides appear in the form of differently oriented crystalline phases around the metallic core as a shell-like layer (Cu2O) and as nanoscopic islands (CuO) on the top of that. Time dependent oxide thickness data suggests that oxidation follows the field-assisted growth model at the beginning of the process, as practically immediately an oxide layer of ∼2.8 nm thickness develops on the surface. However, after this initial rapid growth, the local field attenuates and the classical parabolic diffusion limited growth plays the main role in the oxidation. Because of the single crystal facets on the side surface of penta-twinned Cu nanowires, the oxidation rate in the diffusion limited regime is lower than in polycrystalline films.

High sensitivity, fast speed and self-powered ultraviolet photodetectors based on ZnO micro/nanowire networks

Directory of Open Access Journals (Sweden)

Zhiming Bai

2014-02-01

Full Text Available Ultraviolet (UV photodetectors (PDs based on ZnO micro/nanowire (MNW networks with Pt contacts have been fabricated on glass substrates. The PDs exhibited a high photosensitivity (5×103 for 365 nm UV light with a fast recovery time (0.2 s at a reverse bias voltage of 2 V. The light induced modulation of Schottky barrier and MNW–MNW junction barrier was employed to account for the results. It was also observed that the PD had a high on–off ratio of 800 without external bias. The photovoltaic effect was proposed to explain the self-powered phenomenon.

Electrical, photoelectrical and morphological properties of ZnO nanofiber networks grown on SiO{sub 2} and on Si nanowires

Energy Technology Data Exchange (ETDEWEB)

Vega, Nadia Celeste; Comedi, David [Universidad Nacional de Tucuman (FACET/UNT), (Argentina). Facultad de Ciencias Exactas y Tecnologia. Dept. de Fisica. Lab. de Fisica del Solido; Audebert, Fernando [Consejo Nacional de Investigaciones Cientificas y Tecnicas (CONICET) (Argentina); Tirado, Monica, E-mail: mtirado@herrera.unt.edu.ar [Universidad Nacional de Tucuman (FACET/UNT), (Argentina). Facultad de Ciencias Exactas y Tecnologia. Dept. de Fisica. Lab. de Nanomateriales y de Propiedades Dielectricas; Rodriguez, Andres; Rodriguez, Tomas [Universidad Politecnica de Madrid (ETSIT/UPM), Madrid (Spain). Escuela Tecnica Superior de Ingenieros de Telecomucacion. Tecnologia Electronica; Hughes, Gareth M.; Grovenor, Chris R.M. [University of Oxford, Parks Road, OX (United Kingdom). Dept. of Materials

2013-11-01

ZnO nanofibre networks (NFNs) were grown by vapour transport method on Si-based substrates. One type of substrate was SiO{sub 2} thermally grown on Si and another consisted of a Si wafer onto which Si nanowires (NWs) had been grown having Au nanoparticles catalysts. The ZnO-NFN morphology was observed by scanning electron microscopy on samples grown at 600 Degree-Sign C and 720 Degree-Sign C substrate temperature, while an focused ion beam was used to study the ZnO NFN/Si NWs/Si and ZnO NFN/SiO{sub 2} interfaces. Photoluminescence, electrical conductance and photo conductance of ZnO-NFN was studied for the sample grown on SiO{sub 2}. The photoluminescence spectra show strong peaks due to exciton recombination and lattice defects. The ZnO-NFN presents quasi-persistent photoconductivity effects and ohmic I-V characteristics which become nonlinear and hysteretic as the applied voltage is increased. The electrical conductance as a function of temperature can be described by a modified three dimensional variable hopping model with nanometer-ranged typical hopping distances. (author)

UV-assisted room temperature gas sensing of GaN-core/ZnO-shell nanowires

International Nuclear Information System (INIS)

Park, Sunghoon; Ko, Hyunsung; Kim, Soohyun; Lee, Chongmu

2014-01-01

GaN is highly sensitive to low concentrations of H 2 in ambient air and is almost insensitive to most other common gases. However, enhancing the sensing performance and the detection limit of GaN is a challenge. This study examined the H 2 -gas-sensing properties of GaN nanowires encapsulated with ZnO. GaN-core/ZnO-shell nanowires were fabricated by using a two-step process comprising the thermal evaporation of GaN powders and the atomic layer deposition of ZnO. The core-shell nanowires ranged from 80 to 120 nm in diameter and from a few tens to a few hundreds of micrometers in length, with a mean shell layer thickness of ∼8 nm. Multiple-networked pristine GaN nanowire and ZnO-encapsulated GaN (or GaN-core/ZnO-shell) nanowire sensors showed responses of 120 - 147% and 179 - 389%, respectively, to 500 - 2,500 ppm of H 2 at room temperature under UV (254 nm) illumination. The underlying mechanism of the enhanced response of the GaN nanowire to H 2 gas when using ZnO encapsulation and UV irradiation is discussed.

Metal oxide nanostructures: preparation, characterization and functional applications as chemical sensors.

Science.gov (United States)

Zappa, Dario; Bertuna, Angela; Comini, Elisabetta; Kaur, Navpreet; Poli, Nicola; Sberveglieri, Veronica; Sberveglieri, Giorgio

2017-01-01

Preparation and characterization of different metal oxide (NiO, WO 3 , ZnO, SnO 2 and Nb 2 O 5 ) nanostructures for chemical sensing are presented. p-Type (NiO) and n-type (WO 3 , SnO 2 , ZnO and Nb 2 O 5 ) metal oxide nanostructures were grown on alumina substrates using evaporation-condensation, thermal oxidation and hydrothermal techniques. Surface morphologies and crystal structures were investigated through scanning electron microscopy and Raman spectroscopy. Furthermore, different batches of sensors have been prepared, and their sensing performances towards carbon monoxide and nitrogen dioxide have been explored. Moreover, metal oxide nanowires have been integrated into an electronic nose and successfully applied to discriminate between drinking and contaminated water.

Optical and structural properties of ZnO nanorods grown on graphene oxide and reduced graphene oxide film by hydrothermal method

Energy Technology Data Exchange (ETDEWEB)

Alver, U., E-mail: alver@ksu.edu.tr [Department of Physics, Kahramanmaras Sutcu Imam University, K. Maras 46100 (Turkey); Zhou, W.; Belay, A.B. [Nanoscience and Technology Center, University of Central Florida, Orlando, FL 32816 (United States); Florida Solar Energy Center, Cocoa, FL 32922 (United States); Krueger, R. [Nanoscience and Technology Center, University of Central Florida, Orlando, FL 32816 (United States); Davis, K.O.; Hickman, N.S. [Nanoscience and Technology Center, University of Central Florida, Orlando, FL 32816 (United States); Florida Solar Energy Center, Cocoa, FL 32922 (United States)

2012-01-15

ZnO nanorods were grown on graphene oxide (GO) and reduced graphene oxide (RGO) films with seed layers by using simple hydrothermal method. The GO films were deposited by spray coating and then annealed at 400 Degree-Sign C in argon atmosphere to obtain RGO films. The optical and structural properties of the ZnO nanorods were systematically studied by scanning electron microscopy (SEM), X-ray diffraction (XRD) and ultraviolet-visible spectroscopy. The XRD patterns and SEM images show that without a seed layer, no ZnO nanorod deposition occurs on GO or RGO films. Transmittance of ZnO nanorods grown on RGO films was measured to be approximately 83% at 550 nm. Furthermore, while transmittance of RGO films increases with ZnO nanorod deposition, transmittance of GO decreases.

Photocatalytic segmented nanowires and single-step iron oxide nanotube synthesis: Templated electrodeposition as all-round tool

NARCIS (Netherlands)

Maas, M.G.; Rodijk, E.J.B.; Maijenburg, A.W.; ten Elshof, Johan E.; Blank, David H.A.; Nielsch, K.; Fontcuberta i Morral, A.; Holt, J.K.; Thomson, C.V.

2010-01-01

Templated electrodeposition was used to synthesize silver-zinc oxide nanowires and iron oxide (Fe2O3) nanotubes in polycarbonate track etched (PCTE) membranes. Metal/oxide segmented nanowires were made to produce hydrogen gas from a water/methanol mixture under ultraviolet irradiation. It was

Fabrication and evaluation of series-triple quantum dots by thermal oxidation of silicon nanowire

International Nuclear Information System (INIS)

Uchida, Takafumi; Jo, Mingyu; Tsurumaki-Fukuchi, Atsushi; Arita, Masashi; Takahashi, Yasuo; Fujiwara, Akira

2015-01-01

Series-connected triple quantum dots were fabricated by a simple two-step oxidation technique using the pattern-dependent oxidation of a silicon nanowire and an additional oxidation of the nanowire through the gap of the fine gates attached to the nanowire. The characteristics of multi-dot single-electron devices are obtained. The formation of each quantum dot beneath an attached gate is confirmed by analyzing the electrical characteristics and by evaluating the gate capacitances between all pairings of gates and quantum dots. Because the gate electrode is automatically attached to each dot, the device structure benefits from scalability. This technique promises integrability of multiple quantum dots with individual control gates

On-chip surface modified nanostructured ZnO as functional pH sensors

International Nuclear Information System (INIS)

Zhang, Qing; Liu, Wenpeng; Sun, Chongling; Zhang, Hao; Pang, Wei; Zhang, Daihua; Duan, Xuexin

2015-01-01

Zinc oxide (ZnO) nanostructures are promising candidates as electronic components for biological and chemical applications. In this study, ZnO ultra-fine nanowire (NW) and nanoflake (NF) hybrid structures have been prepared by Au-assisted chemical vapor deposition (CVD) under ambient pressure. Their surface morphology, lattice structures, and crystal orientation were investigated by scanning electron microscopy (SEM), x-ray diffraction (XRD), and transmission electron microscopy (TEM). Two types of ZnO nanostructures were successfully integrated as gate electrodes in extended-gate field-effect transistors (EGFETs). Due to the amphoteric properties of ZnO, such devices function as pH sensors. We found that the ultra-fine NWs, which were more than 50 μm in length and less than 100 nm in diameter, performed better in the pH sensing process than NW–NF hybrid structures because of their higher surface-to-volume ratio, considering the Nernst equation and the Gouy–Chapman–Stern model. Furthermore, the surface coating of (3-Aminopropyl)triethoxysilane (APTES) protects ZnO nanostructures in both acidic and alkaline environments, thus enhancing the device stability and extending its pH sensing dynamic range. (paper)

Characterization of Zinc Oxide (ZnO) piezoelectric properties for Surface Acoustic Wave (SAW) device

Science.gov (United States)

Rosydi Zakaria, Mohd; Johari, Shazlina; Hafiz Ismail, Mohd; Hashim, Uda

2017-11-01

In fabricating Surface Acoustic Wave (SAW) biosensors device, the substrate is one of important factors that affected to performance device. there are many types of piezoelectric substrate in the markets and the cheapest is zinc Oxide substrate. Zinc Oxide (ZnO) with its unique properties can be used as piezoelectric substrate along with SAW devices for detection of DNA in this research. In this project, ZnO thin film is deposited onto silicon oxide substrate using electron beam evaporation (E-beam) and Sol-Gel technique. Different material structure is used to compare the roughness and best piezoelectric substrate of ZnO thin film. Two different structures of ZnO target which are pellet and granular are used for e-beam deposition and one sol-gel liquid were synthesize and compared. Parameter for thickness of ZnO e-beam deposition is fixed to a 0.1kÅ for both materials structure and sol-gel was coat using spin coat technique. After the process is done, samples are annealed at temperature of 500°C for 2 hours. The structural properties of effect of post annealing using different material structure of ZnO are studied using Atomic Force Microscopic (AFM) for surface morphology and X-ray Diffraction (XRD) for phase structure.

Novel bilayer structure ZnO based photoanode for enhancing conversion efficiency in dye-sensitized solar cells

Energy Technology Data Exchange (ETDEWEB)

Zhang Jin [Electronic Materials Research Laboratory, School of Electronic and Information Engineering, Xi' an, Jiaotong University, Xi' an 710049, Shaanxi (China); Que Wenxiu, E-mail: wxque@mail.xjtu.edu.cn [Electronic Materials Research Laboratory, School of Electronic and Information Engineering, Xi' an, Jiaotong University, Xi' an 710049, Shaanxi (China); Jia Qiaoying; Zhong Peng; Liao Yulong [Electronic Materials Research Laboratory, School of Electronic and Information Engineering, Xi' an, Jiaotong University, Xi' an 710049, Shaanxi (China); Ye Xiangdong; Ding Yucheng [State Key Laboratory of Manufacturing Systems Engineering, Xi' an, Jiaotong University, Xi' an 710049, Shaanxi (China)

2011-07-07

Highlights: > The ZnO nanocrystallite aggregates on the ZnO nanowire arrays (ZnO-(NCAs/NWs)) photoanode are successfully fabricated. > Results indicate that such a configuration of the ZnO-(NCAs/NWs) photoanode can significantly improve the efficiency of the DSSC. > The electron transport properties of the DSSC based on the ZnO-(NCAs/NWs) photoanode is discussed deeply. - Abstract: ZnO film with a novel bilayer structure, which consists of ZnO nanowire (ZnO NW) arrays as underlayer and polydisperse ZnO nanocrystallite aggregates (ZnO NCAs) as overlayer, is fabricated and studied as dye-sensitized solar-cell (DSSC) photoanode. Results indicate that such a configuration of the ZnO nanocrystallite aggregates on the ZnO nanowire arrays (ZnO-(NCAs/NWs)) can significantly improve the efficiency of the DSSC due to its fast electron transport, relatively high surface area and enhanced light-scattering capability. The short-circuit current density (J{sub sc}) and the energy-conversion efficiency ({eta}) of the DSSC based on the ZnO-(NCAs/NWs) photoanode are estimated and the values are 9.19 mA cm{sup -2} and 3.02%, respectively, which are much better than those of the cells formed only by the ZnO NWs (J{sub sc} = 4.02 mA cm{sup -2}, {eta} = 1.04%) or the ZnO NCAs (J{sub sc} = 7.14 mA cm{sup -2}, {eta} = 2.56%) photoanode. Moreover, the electron transport properties of the DSSC based on the ZnO-(NCAs/NWs) photoanode are also discussed.

An effective surface-enhanced Raman scattering template based on a Ag nanocluster-ZnO nanowire array

International Nuclear Information System (INIS)

Deng, S; Zhang, X; Loh, K P; Fan, H M; Sow, C H; Cheng, C-L; Foo, Y L

2009-01-01

An effective surface-enhanced Raman scattering (SERS) template based on a 3D hybrid Ag nanocluster (NC)-decorated ZnO nanowire array was fabricated through a simple process of depositing Ag NCs on ZnO nanowire arrays. The effects of particle size and excitation energy on the Raman scattering in these hybrid systems have been investigated using rhodamine 6G as a standard analyte. The results indicate that the hybrid nanosystem with 150 nm Ag NCs produces a larger SERS enhancement factor of 3.2 x 10 8 , which is much higher than that of 10 nm Ag NCs (6.0 x 10 6 ) under 532 nm excitation energy. The hybrid nanowire arrays were further applied to obtain SERS spectra of the two-photon absorption (TPA) chromophore T7. Finite-difference time-domain simulations reveal the presence of an enhanced field associated with inter-wire plasmon coupling of the 150 nm Ag NCs on adjacent ZnO nanowires; such a field was absent in the case of the 10 nm Ag NC-coated ZnO nanowire. Such hybrid nanosystems could be used as SERS substrates more effectively than assembled Ag NC film due to the enhanced light-scattering local field and the inter-wire plasmon-enhanced electromagnetic field.

Large-area fabrication of patterned ZnO-nanowire arrays using light stamping lithography.

Science.gov (United States)

Hwang, Jae K; Cho, Sangho; Seo, Eun K; Myoung, Jae M; Sung, Myung M

2009-12-01

We demonstrate selective adsorption and alignment of ZnO nanowires on patterned poly(dimethylsiloxane) (PDMS) thin layers with (aminopropyl)siloxane self-assembled monolayers (SAMs). Light stamping lithography (LSL) was used to prepare patterned PDMS thin layers as neutral passivation regions on Si substrates. (3-Aminopropyl)triethoxysilane-based SAMs were selectively formed only on regions exposing the silanol groups of the Si substrates. The patterned positively charged amino groups define and direct the selective adsorption of ZnO nanowires with negative surface charges in the protic solvent. This procedure can be adopted in automated printing machines that generate patterned ZnO-nanowire arrays on large-area substrates. To demonstrate its usefulness, the LSL method was applied to prepare ZnO-nanowire transistor arrays on 4-in. Si wafers.

Absorptive lasing mode suppression in ZnO nano- and microcavities

Energy Technology Data Exchange (ETDEWEB)

Wille, M.; Michalsky, T.; Krüger, E.; Grundmann, M.; Schmidt-Grund, R. [Universität Leipzig, Institut für Experimentelle Physik II, Linnéstraße 5, 04103 Leipzig (Germany)

2016-08-08

We conclusively explain the different lasing mode energies in ZnO nano- and microcavities observed by us and reported in literature. The limited penetration depth of usually used excitation lasers results in an inhomogeneous spatial gain region depending on the structure size and geometry. Hence, weakly or even nonexcited areas remain present after excitation, where modes are instantaneously suppressed by excitonic absorption. We compare the effects for ZnO microwires, nanowires, and tetrapod-like structures at room temperature and demonstrate that the corresponding mode selective effect is most pronounced for whispering-gallery modes in microwires with a hexagonal cross section. Furthermore, the absorptive lasing mode suppression will be demonstrated by correlating the spot size of the excitation laser and the lasing mode characteristic of a single ZnO nanowire.

Effect for hydrogen, nitrogen, phosphorous, and argon ions irradiation on ZnO NWs

International Nuclear Information System (INIS)

Ishaq, A.; Usman, M.; Dee, C. F.; Khurram, A. A.; Yan, L.; Zhou, X. T.; Nadeem, A.; Naseem, S.; Rafique, H. M.; Majlis, B. Y.

2013-01-01

Zinc oxide (ZnO) nanowires (NWs) are exposed to energetic proton (H + ), nitrogen (N + ), phosphorus (P + ), and argon (Ar + ) ions to understand the radiation hardness and structural changes induced by these irradiations. High-resolution transmission electron microscopy is utilized to see the irradiation effects in NWs. Multiple doses and energies of radiation at different temperatures are used for different set of samples. The study reveals that wurtzite (crystalline)-structured ZnO NWs experience amorphization, degradation, and morphological changes after the irradiation. At room temperature, deterioration of the crystalline structure is observed under high fluence of H + , N + , and P + ions. While for ZnO NWs, bombarded by Ar + and P + ions, nano-holes are produced. The ZnO NWs surfaces also show corrugated morphology full of nano-humps when irradiated by Ar + ions at 400 °C. The corrugated surface could serve as tight-holding interface when interconnecting it with other NWs/nanotubes. These nano-humps may have the function of increasing the surface for surface-oriented sensing applications in the future.

Effect for hydrogen, nitrogen, phosphorous, and argon ions irradiation on ZnO NWs

Energy Technology Data Exchange (ETDEWEB)

Ishaq, A., E-mail: ishaq_ah@yahoo.com; Usman, M. [National Centre for Physics, Quaid-i-Azam University, Experimental Physics Labs (Pakistan); Dee, C. F. [Universiti Kebangsaan Malaysia (UKM), Institute of Microengineering and Nanoelectronics (IMEN) (Malaysia); Khurram, A. A. [National Centre for Physics, Quaid-i-Azam University, Experimental Physics Labs (Pakistan); Yan, L., E-mail: yanlong@sinap.ac.cn; Zhou, X. T. [Chinese Academy of Sciences, Shanghai Institute of Applied Physics (China); Nadeem, A.; Naseem, S. [University of the Punjab, Centre of Excellence in Solid State Physics (Pakistan); Rafique, H. M. [University of the Punjab, Department of Physics (Pakistan); Majlis, B. Y. [Universiti Kebangsaan Malaysia (UKM), Institute of Microengineering and Nanoelectronics (IMEN) (Malaysia)

2013-04-15

Zinc oxide (ZnO) nanowires (NWs) are exposed to energetic proton (H{sup +}), nitrogen (N{sup +}), phosphorus (P{sup +}), and argon (Ar{sup +}) ions to understand the radiation hardness and structural changes induced by these irradiations. High-resolution transmission electron microscopy is utilized to see the irradiation effects in NWs. Multiple doses and energies of radiation at different temperatures are used for different set of samples. The study reveals that wurtzite (crystalline)-structured ZnO NWs experience amorphization, degradation, and morphological changes after the irradiation. At room temperature, deterioration of the crystalline structure is observed under high fluence of H{sup +}, N{sup +}, and P{sup +} ions. While for ZnO NWs, bombarded by Ar{sup +} and P{sup +} ions, nano-holes are produced. The ZnO NWs surfaces also show corrugated morphology full of nano-humps when irradiated by Ar{sup +} ions at 400 Degree-Sign C. The corrugated surface could serve as tight-holding interface when interconnecting it with other NWs/nanotubes. These nano-humps may have the function of increasing the surface for surface-oriented sensing applications in the future.

Novel Size and Surface Oxide Effects in Silicon Nanowires as Lithium Battery Anodes

KAUST Repository

McDowell, Matthew T.

2011-09-14

With its high specific capacity, silicon is a promising anode material for high-energy lithium-ion batteries, but volume expansion and fracture during lithium reaction have prevented implementation. Si nanostructures have shown resistance to fracture during cycling, but the critical effects of nanostructure size and native surface oxide on volume expansion and cycling performance are not understood. Here, we use an ex situ transmission electron microscopy technique to observe the same Si nanowires before and after lithiation and have discovered the impacts of size and surface oxide on volume expansion. For nanowires with native SiO2, the surface oxide can suppress the volume expansion during lithiation for nanowires with diameters <∼50 nm. Finite element modeling shows that the oxide layer can induce compressive hydrostatic stress that could act to limit the extent of lithiation. The understanding developed herein of how volume expansion and extent of lithiation can depend on nanomaterial structure is important for the improvement of Si-based anodes. © 2011 American Chemical Society.

Switching behavior of resistive change memory using oxide nanowires

Science.gov (United States)

Aono, Takashige; Sugawa, Kosuke; Shimizu, Tomohiro; Shingubara, Shoso; Takase, Kouichi

2018-06-01

Resistive change random access memory (ReRAM), which is expected to be the next-generation nonvolatile memory, often has wide switching voltage distributions due to many kinds of conductive filaments. In this study, we have tried to suppress the distribution through the structural restriction of the filament-forming area using NiO nanowires. The capacitor with Ni metal nanowires whose surface is oxidized showed good switching behaviors with narrow distributions. The knowledge gained from our study will be very helpful in producing practical ReRAM devices.

Graphene oxide-modified ZnO particles: synthesis, characterization, and antibacterial properties

Directory of Open Access Journals (Sweden)

Zhong LL

2015-08-01

Full Text Available Linlin Zhong, Kyusik Yun Department of Bionanotechnology, Gachon University, Gyeonggi-do, Republic of Korea Abstract: Nanosized ZnO particles with diameters of 15 nm were prepared with a solution precipitation method at low cost and high yield. The synthesis of the particles was functionalized by the organic solvent dimethylformamide, and the particles were covalently bonded to the surface of graphene oxide. The morphology of the graphene oxide sheets and ZnO particles was confirmed with field emission scanning electron microscopy and biological atomic force microscopy. Fourier transform infrared spectroscopy and X-ray diffraction were used to analyze the physical and chemical properties of the ZnO/graphene oxide composites that differed from those of the individual components. Enhanced electrochemical properties were detected with cyclic voltammetry, with a redox peak of the composites at 0.025 mV. Excellent antibacterial activity of ZnO/graphene oxide composites was observed with a microdilution method in which minimum inhibitory concentrations of 6.25 µg/mL for Escherichia coli and Salmonella typhimurium, 12.5 µg/mL for Bacillus subtilis, and 25 µg/mL for Enterococcus faecalis. After further study of the antibacterial mechanism, we concluded that a vast number of reactive oxygen species formed on the surface of composites, improving antibacterial properties. Keywords: graphene oxide, ZnO, characterization, antibacterial property

Modulating the size of ZnO nanorods on SiO2 substrates by incorporating reduced graphene oxide into the seed layer solution

Directory of Open Access Journals (Sweden)

Tzu-Yi Yu

2017-06-01

Full Text Available In this research, reduced graphene oxide was incorporated into the ZnO seed layer to modulate the rod diameter of ZnO nanorods (NRs during solgel/hydrothermal growth. To characterize the reduced graphene oxide incorporated ZnO NRs, multiple material analysis techniques including field-emission scanning electron microscopy, surface contact angle measurements, X-ray diffraction, and photoluminescence were used to explore distinct properties of these size modulatable NRs. Results indicate ZnO NRs with smaller diameters could be observed with more reduced graphene oxide added into the ZnO seed layer. Furthermore, better crystallinity, higher hydrophobicity and lower defect concentration could be obtained with more amount of reduced graphene oxide added into the ZnO seed layer. The modulatable reduced graphene oxide-incorporated ZnO NRs growth is promising for future ZnO NRs based nanodevice applications.

Large-scale fabrication of vertically aligned ZnO nanowire arrays

Science.gov (United States)

Wang, Zhong L; Das, Suman; Xu, Sheng; Yuan, Dajun; Guo, Rui; Wei, Yaguang; Wu, Wenzhuo

2013-02-05

In a method for growing a nanowire array, a photoresist layer is placed onto a nanowire growth layer configured for growing nanowires therefrom. The photoresist layer is exposed to a coherent light interference pattern that includes periodically alternately spaced dark bands and light bands along a first orientation. The photoresist layer exposed to the coherent light interference pattern along a second orientation, transverse to the first orientation. The photoresist layer developed so as to remove photoresist from areas corresponding to areas of intersection of the dark bands of the interference pattern along the first orientation and the dark bands of the interference pattern along the second orientation, thereby leaving an ordered array of holes passing through the photoresist layer. The photoresist layer and the nanowire growth layer are placed into a nanowire growth environment, thereby growing nanowires from the nanowire growth layer through the array of holes.

Observation of intact desorption ionization of peptide molecules from arrays of tungsten oxide nanowires by laser irradiation

Energy Technology Data Exchange (ETDEWEB)

Han, Sang Yun [Dept. of Nanochemistry, Gachon University, Seongnam (Korea, Republic of)

2015-08-15

Length-controlled WO{sub 3} surface nanowires with a 50 nm diameter were prepared by utilizing anodic Al{sub 2}O{sub 3} templates. Careful control of the fabrication process yielded a set of length-controlled nanowire arrays (Figure 1). The lengths of the nanowires covered a range of 60–250 nm. Typically, a 0.5-μL drop of a sample solution in 10% MeOH that contained 2 pmol of sample was pipetted directly onto the nanowire chips, which were dried under ambient conditions. We report the observation of intact LDI of thermally labile peptides from WO{sub 3} nanowire arrays, which have never been reported for any other metal oxide nanowire arrays. As metal oxides are thermally stable and useful in many applications, and fabrication of various nanostructures are well established, we suggest that the nanostructured surfaces of metal oxides are promising for LDI and thus worthy of further investigations.

A p-silicon nanowire/n-ZnO thin film heterojunction diode prepared by thermal evaporation

International Nuclear Information System (INIS)

Hazra, Purnima; Jit, S.

2014-01-01

This paper represents the electrical and optical characteristics of a SiNW/ZnO heterojunction diode and subsequent studies on the photodetection properties of the diode in the ultraviolet (UV) wavelength region. In this work, silicon nanowire arrays were prepared on p-type (100)-oriented Si substrate by an electroless metal deposition and etching method with the help of ultrasonication. After that, catalyst-free deposition of zinc oxide (ZnO) nanowires on a silicon nanowire (SiNW) array substrate was done by utilizing a simple and cost-effective thermal evaporation technique without using a buffer layer. The SEM and XRD techniques are used to show the quality of the as-grown ZnO nanowire film. The junction properties of the diode are evaluated by measuring current—voltage and capacitance—voltage characteristics. The diode has a well-defined rectifying behavior with a rectification ratio of 190 at ±2 V, turn-on voltage of 0.5 V, and barrier height is 0.727 eV at room temperature under dark conditions. The photodetection parameters of the diode are investigated in the bias voltage range of ±2 V. The diode shows responsivity of 0.8 A/W at a bias voltage of 2 V under UV illumination (wavelength = 365 nm). The characteristics of the device indicate that it can be used for UV detection applications in nano-optoelectronic and photonic devices. (semiconductor devices)

In Situ Study of Thermal Stability of Copper Oxide Nanowires at Anaerobic Environment

Directory of Open Access Journals (Sweden)

Lihui Zhang

2014-01-01

Full Text Available Many metal oxides with promising electrochemical properties were developed recently. Before those metal oxides realize the use as an anode in lithium ion batteries, their thermal stability at anaerobic environment inside batteries should be clearly understood for safety. In this study, copper oxide nanowires were investigated as an example. Several kinds of in situ experiment methods including in situ optical microscopy, in situ Raman spectrum, and in situ transmission electron microscopy were adopted to fully investigate their thermal stability at anaerobic environment. Copper oxide nanowires begin to transform as copper(I oxide at about 250°C and finish at about 400°C. The phase transformation proceeds with a homogeneous nucleation.

High-performance photoresponse from single-walled carbon nanotube-zinc oxide heterojunctions

International Nuclear Information System (INIS)

Chang, Jingbo; Najeeb, Choolakadavil Khalid; Lee, Jae-Hyeok; Lee, Minsu; Kim, Jae-Ho

2011-01-01

Photoactive materials consisting of single-walled carbon nanotube (SWNT)-zinc oxide (ZnO) heterojunctions targeted for optoelectronic applications are investigated in terms of photoresponse and photovoltaic effects. The devices based on SWNT-ZnO heterojunction films are fabricated by two step processes: first, a well aligned SWNT monolayer is deposited on an oxide substrate by the Langmuir-Blodgett (LB) technique; then a ZnO film prepared by filtration of ZnO nanowire solution is transferred onto the SWNT film to form SWNT-ZnO junctions. The SWNT-ZnO heterojunction demonstrates faster photoresponse time (2.75 s) up to 18 times and photovoltaic efficiency (1.33 nA) up to 4 times higher than that of only a ZnO device. Furthermore, the mechanisms of UV sensitivity enhancement and photovoltaic effects are explained according to the high electron mobility in the SWNT-ZnO heterojunctions.

Effects of piezoelectric potential on the transport characteristics of metal-ZnO nanowire-metal field effect transistor

KAUST Repository

Gao, Zhiyuan

2009-01-01

We have investigated the effects of piezoelectric potential in a ZnO nanowire on the transport characteristics of the nanowire based field effect transistor through numerical calculations and experimental observations. Under different straining conditions including stretching, compressing, twisting, and their combination, a piezoelectric potential is created throughout the nanowire to modulatealternate the transport property of the metal-ZnO nanowire contacts, resulting in a switch between symmetric and asymmetric contacts at the two ends, or even turning an Ohmic contact type into a diode. The commonly observed natural rectifying behavior of the as-fabricated ZnO nanowire can be attributed to the strain that was unpurposely created in the nanowire during device fabrication and material handling. This work provides further evidence on piezopotential governed electronic transport and devices, e.g., piezotronics.

Formation of tungsten oxide nanowires by ion irradiation and vacuum annealing

Science.gov (United States)

Zheng, Xu-Dong; Ren, Feng; Wu, Heng-Yi; Qin, Wen-Jing; Jiang, Chang-Zhong

2018-04-01

Here we reported the fabrication of tungsten oxide (WO3-x ) nanowires by Ar+ ion irradiation of WO3 thin films followed by annealing in vacuum. The nanowire length increases with increasing irradiation fluence and with decreasing ion energy. We propose that the stress-driven diffusion of the irradiation-induced W interstitial atoms is responsible for the formation of the nanowires. Comparing to the pristine film, the fabricated nanowire film shows a 106-fold enhancement in electrical conductivity, resulting from the high-density irradiation-induced vacancies on the oxygen sublattice. The nanostructure exhibits largely enhanced surface-enhanced Raman scattering effect due to the oxygen vacancy. Thus, ion irradiation provides a powerful approach for fabricating and tailoring the surface nanostructures of semiconductors.

Taheri-Saramad x-ray detector (TSXD): a novel high spatial resolution x-ray imager based on ZnO nano scintillator wires in polycarbonate membrane.

Science.gov (United States)

Taheri, A; Saramad, S; Ghalenoei, S; Setayeshi, S

2014-01-01

A novel x-ray imager based on ZnO nanowires is designed and fabricated. The proposed architecture is based on scintillation properties of ZnO nanostructures in a polycarbonate track-etched membrane. Because of higher refractive index of ZnO nanowire compared to the membrane, the nanowire acts as an optical fiber that prevents the generated optical photons to spread inside the detector. This effect improves the spatial resolution of the imager. The detection quantum efficiency and spatial resolution of the fabricated imager are 11% and <6.8 μm, respectively.

Taheri-Saramad x-ray detector (TSXD): A novel high spatial resolution x-ray imager based on ZnO nano scintillator wires in polycarbonate membrane

Energy Technology Data Exchange (ETDEWEB)

Taheri, A., E-mail: at1361@aut.ac.ir; Saramad, S.; Ghalenoei, S.; Setayeshi, S. [Department of Energy Engineering and Physics, Amirkabir University of Technology, Tehran 15875-4413 (Iran, Islamic Republic of)

2014-01-15

A novel x-ray imager based on ZnO nanowires is designed and fabricated. The proposed architecture is based on scintillation properties of ZnO nanostructures in a polycarbonate track-etched membrane. Because of higher refractive index of ZnO nanowire compared to the membrane, the nanowire acts as an optical fiber that prevents the generated optical photons to spread inside the detector. This effect improves the spatial resolution of the imager. The detection quantum efficiency and spatial resolution of the fabricated imager are 11% and <6.8 μm, respectively.

Fabrication and characterization of Zinc Oxide (ZnO) nanoparticle by sol-gel method

International Nuclear Information System (INIS)

Siswanto; Akwalia, Putri Riski; Rochman, Nurul T.

2017-01-01

Currently, nanomaterial is an interestingfield of study. This is due to its chemical and physical properties that are superior to that of large-sized materials. One nanomaterial widely studied is zinc oxide (ZnO). In this study, a synthesis of ZnO nanoparticles made by Sol-Gel method was conducted. The process parameters used are variations in pH, in increasing order, of 7; 8; 9; 10; 11; and 12. There are two principal reactions to produce a compound oxide, namely hydrolysis and condensation. NaOH is an agent for the hydrolysis of (CH 3 COO) 2 Zn resultingin Zn (OH) 2 . Subsequently, condensation produces ZnO. Calcination was carried out at a temperature of 80 ° C for 1 hour. The ccharacterization of the samples showed that the condition of pH 12 produced the best sample with a size of 73.8 nm and ZnO percentage of 100%. Although pH 7 produced a particle size of 1.3 nm, the percentage of ZnO formed was only 42.9%. The calcination process was performed to remove CH 3 COONa. However, the process can lead to aggregation of ZnO particles to each other, which increases the particle size. (paper)

Luminescence of one dimensional ZnO, GeO{sub 2}–Zn{sub 2}GeO{sub 4} nanostructure through thermal evaporation of Zn and Ge powder mixture

Energy Technology Data Exchange (ETDEWEB)

Pham, Vuong-Hung, E-mail: vuong.phamhung@hust.edu.vn; Kien, Vu Trung; Tam, Phuong Dinh; Huy, Pham Thanh

2016-07-15

Graphical abstract: - Highlights: • ZnO and GeO{sub 2}–ZnGeO{sub 4} nanowires were fabricated by thermal evaporation of Zn and Ge powder mixture. • Morphology of specimens were observed to have a nanowire structure to rod-like morphology. • Strong NBE emission band with suppressed visible green emission band were observed on the dominant ZnO nanowires. • Strong emission of ∼530 nm were observed on the GeO{sub 2}–Zn{sub 2}GeO{sub 4} nanowires. - Abstract: This paper reports the first attempt for fabrication of thermal evaporated Zn–Ge powder mixture to achieve near-band-edge (NBE) emission of ZnO and visible emission of GeO{sub 2}–Zn{sub 2}GeO{sub 4} nanowires with controllable intensities. The nanowires were fabricated by thermal evaporation of Zn and Ge powder mixture, particularly, by using different Zn:Ge ratio, temperature and evaporated times. The morphology of nanowires was depended on the Zn and Ge ratio that was observed to have a nanowire structure to rod-like morphology. The thermal evaporation of Zn:Ge powder mixture resulted in formation of dominant ZnO or GeO{sub 2}–Zn{sub 2}GeO{sub 4} nanowires as a function of evaporated parameters. These results suggest that the application of thermal evaporation of Zn and Ge mixture for potential application in synthesis of ZnO or GeO{sub 2}–Zn{sub 2}GeO{sub 4} nanowires for optoelectronic field.

In situ measurement of the kinetic friction of ZnO nanowires inside a scanning electron microscope

Energy Technology Data Exchange (ETDEWEB)

Polyakov, Boris, E-mail: boriss.polakovs@ut.ee [Institute of Physics, University of Tartu, Riia st. 142, Tartu (Estonia); Institute of Solid State Physics, University of Latvia, Kengaraga st. 8, Riga (Latvia); Dorogin, Leonid M; Lohmus, Ants [Institute of Physics, University of Tartu, Riia st. 142, Tartu (Estonia); Romanov, Alexey E [Institute of Physics, University of Tartu, Riia st. 142, Tartu (Estonia); Ioffe Physical Technical Institute, RAS, Politehnicheskaja st. 26, St. Petersburg (Russian Federation); Lohmus, Rynno [Institute of Physics, University of Tartu, Riia st. 142, Tartu (Estonia)

2012-01-15

A novel method for measuring the kinetic friction force in situ was developed for zinc oxide nanowires on highly oriented pyrolytic graphite and oxidised silicon wafers. The experiments were performed inside a scanning electron microscope and used a nanomanipulation device as an actuator, which also had an atomic force microscope tip attached to it as a probe. A simple model based on the Timoshenko elastic beam theory was applied to interpret the elastic deformation of a sliding nanowire (NW) and to determine the distributed kinetic friction force.

Characteristics of CVD graphene nanoribbon formed by a ZnO nanowire hardmask

Energy Technology Data Exchange (ETDEWEB)

Kang, Chang Goo; Kang, Jang Won; Lee, Seung Yong; Hwang, Hyeon Jun; Lee, Young Gon; Park, Seong-Ju; Lee, Byoung Hun [School of Material Science and Engineering, Gwangju Institute of Science and Technology, Oryong-dong 1, Buk-gu, Gwangju, 500-712 (Korea, Republic of); Lee, Sang Kyung; Cho, Chun Hum [Department of Nanobio Materials and Electronics, Gwangju Institute of Science and Technology, Oryong-dong 1, Buk-gu, Gwangju, 500-712 (Korea, Republic of); Heo, Jinseong; Chung, Hyun-Jong; Yang, Heejun [Semiconductor Devices Lab, Samsung Advanced Institute of Technology, Yongin (Korea, Republic of); Seo, Sunae [Department of Physics, Sejong University, Gunja-Dong, Kwanggin-gu, Seoul (Korea, Republic of); Ko, Ki Young; Ahn, Jinho, E-mail: bhl@gist.ac.kr [Division of Materials Science and Engineering, Hanyang University, 17 Haengdang-dong, Seongdong-gu, Seoul, 133-791 (Korea, Republic of)

2011-07-22

A graphene nanoribbon (GNR) is an important basic structure to open a bandgap in graphene. The GNR processes reported in the literature are complex, time-consuming, and expensive; moreover, the device yield is relatively low. In this paper, a simple new process to fabricate a long and straight graphene nanoribbon with a high yield has been proposed. This process utilizes CVD graphene substrate and a ZnO nanowire as the hardmask for patterning. 8 {mu}m long and 50-100 nm wide GNRs were successfully demonstrated in high density without any trimming, and {approx} 10% device yield was realized with a top-down patterning process. After passivating the surfaces of the GNRs using a low temperature atomic layer deposition (ALD) of Al{sub 2}O{sub 3}, high performance GNR MOSFETs with symmetric drain-current-gate-voltage (I{sub d}-V{sub g}) curves were demonstrated and a field effect mobility up to {approx} 1200 cm{sup 2} V{sup -1} s{sup -1} was achieved at V{sub d} = 10 mV.

Manufacturing process, characterization and optical investigation of amorphous 1D zinc oxide nanostructures

Science.gov (United States)

Matysiak, Wiktor; Tański, Tomasz; Zaborowska, Marta

2018-06-01

The purpose of this article was to produce amorphous ZnO nanowires via the electrospinning process from a polyvinylpyrrolidone (PVP)/zinc acetate dihydrate (Zn(COOH)2)/dimethylformamide (DMF) and ethanol (EtOH) solution. The as obtained nanofibers were calcined at temperatures ranging from 400 to 600 °C to remove the organic phase. The one-dimensional zinc oxide nanostructures were studied using a scanning electron microscope (SEM) and a transmission electron microscope (TEM) to analyse the influence of the used temperature on the morphology and structures of the obtained ceramic nanomaterials. In order to examine the chemical structure of nanowires, the energy dispersive spectrometry (EDX) was used. Besides, a thermogravimetric analysis (TGA) was performed to show the polymer concentration loss in a function of temperature in order to obtain pure zinc oxide nanowires. The optical property analysis was performed on the basis of UV-vis spectra of absorbance as a function of the wavelength. Using the modified Swanepoel method, which the authors proposed, and the recorded absorbance spectra determined the banded refractive index n, real n‧ and imaginary k part of the refractive index as a function of the wavelength, complex dielectric permeability ɛ, real and imaginary part εr and εi of the dielectric permeability as a function of the radiation energy of the produced ZnO nanowires.

Controlled Synthesis of Pt Nanowires with Ordered Large Mesopores for Methanol Oxidation Reaction

Science.gov (United States)

Zhang, Chengwei; Xu, Lianbin; Yan, Yushan; Chen, Jianfeng

2016-08-01

Catalysts for methanol oxidation reaction (MOR) are at the heart of key green-energy fuel cell technology. Nanostructured Pt materials are the most popular and effective catalysts for MOR. Controlling the morphology and structure of Pt nanomaterials can provide opportunities to greatly increase their activity and stability. Ordered nanoporous Pt nanowires with controlled large mesopores (15, 30 and 45 nm) are facilely fabricated by chemical reduction deposition from dual templates using porous anodic aluminum oxide (AAO) membranes with silica nanospheres self-assembled in the channels. The prepared mesoporous Pt nanowires are highly active and stable electrocatalysts for MOR. The mesoporous Pt nanowires with 15 nm mesopores exhibit a large electrochemically active surface area (ECSA, 40.5 m2 g-1), a high mass activity (398 mA mg-1) and specific activity (0.98 mA cm-2), and a good If/Ib ratio (1.15), better than the other mesoporous Pt nanowires and the commercial Pt black catalyst.

Ultra-thin graphene edges at the nanowire tips: a cascade cold cathode with two-stage field amplification

International Nuclear Information System (INIS)

Maiti, Uday N; Majumder, Tapas Pal; Maiti, Soumen; Chattopadhyay, Kalyan K

2011-01-01

A multistage field emitter based on graphene-linked ZnO nanowire array is realized by means of spin-coating a graphene dispersion (reduced graphene oxide) over a nanostructured platform followed by plasma modification. Spin-coating leads to interlinking of graphene sheets between the neighboring nanowires whereas plasma etching in the subsequent step generates numerous ultra-sharp graphene edges at the nanowire tips. The inherent tendency of graphene to lay flat over a plane substrate can easily be bypassed through the currently presented nanostructure platform based technique. The turn-on and threshold field significantly downshifted compared to the individual components in the cascade emitter. Through the facile electron transfer from nanowires to graphene due to band bending at the ZnO–graphene interface together with multistage geometrical field enhancement at both the nanowire and graphene edges remain behind this enriched field emission from the composite cold cathode. This strategy will open up a new direction to integrate the functionalities of both the graphene array and several other inorganic nanostructure array for practical electronic devices.

The influence of thermal annealing on structure and oxidation of iron nanowires

Directory of Open Access Journals (Sweden)

Krajewski Marcin

2015-03-01

Full Text Available Raman spectroscopy as well as Mössbauer spectroscopy were applied in order to study the phase composition of iron nanowires and its changes, caused by annealing in a neutral atmosphere at several temperatures ranging from 200°C to 800°C. As-prepared nanowires were manufactured via a simple chemical reduction in an external magnetic field. Both experimental techniques proved formation of the surface layer covered by crystalline iron oxides, with phase composition dependent on the annealing temperature (Ta. At higher Ta, hematite was the dominant phase in the nanowires.

Effect of cerium oxide addition on electrical properties of ZnO

Energy Technology Data Exchange (ETDEWEB)

Ibrahim, D.M. [National Research Center, Dokki, Giza (Egypt). Dept. of Ceramics; Mounir, M. [Dept. of Physics, Cairo Univ., Giza (Egypt); Mahgoub, A.S. [Cairo Univ., Giza (Egypt). Dept. of Chemistry; Turky, G. [Dept. of Physics, National Research Center, Dokki, Giza (Egypt); El-Desouky, O.A. [Cer. Cleopatra Co., Ramadan City (Egypt)

2002-07-01

Mixtures of ZnO and Ce{sub 6} O{sub 11} as additive were prepared by solid state reaction from the calcined oxides with the following proportions: 0.03, 0.08, 0.1, 0.2 and 0.4 mole. Disc specimens 1.2 cm 5 cm in diameter and 0.3 cm thickness were processed under a force of 70 kN and fired at 1150 C/ 30 minutes. XRD revealed the presence of limited solid solution of cerium in ZnO, as evident from the shift in the peaks [0.03-0.04 A ] up to 0.1 mole addition and remains constant. SEM revealed the presence of inter-granular phase. EDAX showed it to be a mixture of ZnO and Ce{sub 6}O{sub 11}. Also cerium was detected in the ZnO grains confirming the XRD results. RCL circuit was used to measure the capacitance and resistance at different frequencies at room temperature. The dielectric constant and conductivity were calculated. The change in resistivity with temperature was followed up to 523 K. The change in dielectric strength with temperature at spot frequency of 10 kHz is demonstrated. The electrical conductivity was found to increase with the proportion of cerium oxide up to 0.2 mole then decreased. (orig.)

Radio-frequency magnetron sputtering and wet thermal oxidation of ZnO thin film

International Nuclear Information System (INIS)

Liu, H. F.; Chua, S. J.; Hu, G. X.; Gong, H.; Xiang, N.

2007-01-01

The authors studied the growth and wet thermal oxidation (WTO) of ZnO thin films using a radio-frequency magnetron sputtering technique. X-ray diffraction reveals a preferred orientation of [1010]ZnO(0002)//[1120]Al 2 O 3 (0002) coexisted with a small amount of ZnO (1011) and ZnO (1013) crystals on the Al 2 O 3 (0001) substrate. The ZnO (1011) and ZnO (1013) crystals, as well as the in-plane preferred orientation, are absent from the growth of ZnO on the GaAs(001) substrate. WTO at 550 deg. C improves the crystalline and the photoluminescence more significantly than annealing in air, N 2 and O 2 ambient; it also tends to convert the crystal from ZnO (1011) and ZnO (1013) to ZnO (0002). The evolution of the photoluminescence upon WTO and annealing reveals that the green and orange emissions, centered at 520 and 650 nm, are likely originated from oxygen vacancies and oxygen interstitials, respectively; while the 420 nm emission, which is very sensitive to the postgrowth thermal processing regardless of the substrate and the ambient gas, is likely originated from the surface-state related defects

Morphology-dependent activity of Pt nanocatalysts for ethanol oxidation in acidic media: Nanowires versus nanoparticles

International Nuclear Information System (INIS)

Zhou Weiping; Li Meng; Koenigsmann, Christopher; Ma Chao; Wong, Stanislaus S.; Adzic, Radoslav R.

2011-01-01

Highlights: → We demonstrate the morphology effect of Pt catalysts in electrooxidation of ethanol and CO in an acidic solution. → Pt nanowires and nanoparticles were used as catalysts. → Pt nanowires display a higher catalytic activity by a factor of at least two relative to those nanoparticles for ethanol oxidation. → The rate for CO monolayer oxidation exhibits similar morphology-dependent behavior with a markedly enhanced rate on the Pt nanowires. - Abstract: The morphology of nanostructured Pt catalysts is known to affect significantly the kinetics of various reactions. Herein, we report on a pronounced morphology effect in the electrooxidation of ethanol and carbon monoxide (CO) on Pt nanowires and nanoparticles in an acidic solution. The high resolution transmission electron microscopy analysis showed the inherent morphology difference between these two nanostructured catalysts. Voltammetric and chronoamperometric studies of the ethanol electrooxidation revealed that these nanowires had a higher catalytic activity by a factor of two relative to these nanoparticles. The rate for CO monolayer oxidation exhibits similar morphology-dependent behavior with a markedly enhanced rate on the Pt nanowires. In situ infrared reflection-absorption spectroscopy measurements revealed a different trend for chemisorbed CO formation and CO 2 -to-acetic acid reaction product ratios on these two nanostructures. The morphology-induced change in catalytic activity and selectivity in ethanol electrocatalysis is discussed in detail.