A comparison of oxide thickness predictability from the perspective of codes

Energy Technology Data Exchange (ETDEWEB)

Park, Joo-Young; Shin, Hye-In; Kim, Kyung-Tae; Han, Hee-Tak; Kim, Hong-Jin; Kim, Yong-Hwan [KEPCO Nuclear Fuel Co. Ltd., Daejeon (Korea, Republic of)

2016-10-15

In Korea, OPR1000 and Westinghouse type nuclear power plant reactor fuel rods oxide thickness has been evaluated by imported code A. Because of this, there have been multiple constraints in operation and maintenance of fuel rod design system. For this reason, there has been a growing demand to establish an independent fuel rod design system. To meet this goal, KNF has recently developed its own code B for fuel rod design. The objective of this study is to compare oxide thickness prediction performance between code A and code B and to check the validity of predicting corrosion behaviors of newly developed code B. This study is based on Pool Side Examination (PSE) data for the performance confirmation. For the examination procedures, the oxide thickness measurement methods and equipment of PSE are described in detail. In this study, code B is confirmed conservatism and validity on evaluating cladding oxide thickness through the comparison with code A. Code prediction values show higher value than measured data from PSE. Throughout this study, the values by code B are evaluated and proved to be valid in a view point of the oxide thickness evaluation. However, the code B input for prediction has been made by designer's judgment with complex handwork that might be lead to excessive conservative result and ineffective design process with some possibility of errors.

Rapid optical determination of topological insulator nanoplate thickness and oxidation

Directory of Open Access Journals (Sweden)

Fan Yang

2017-01-01

Full Text Available The stability of 2D antimony telluride (Sb2Te3 nanoplates in ambient conditions is elucidated. These materials exhibit an anisotropic oxidation mode, and CVD synthesized samples oxidize at a much faster rate than exfoliated samples investigated in previous studies. Optical measurement techniques are introduced to rapidly measure the oxidation modes and thickness of 2D materials. Auger characterization were conducted to confirm that oxygen replaces tellurium as opposed to antimony under ambient conditions. No surface morphology evolution was detected in AFM before and after exposure to air. These techniques were employed to determine the origin of the thickness dependent color change effect in Sb2Te3. It is concluded that this effect is a combination of refractive index change due to oxidation and Fresnel effects.

Interfacial and electrical properties of HfAlO/GaSb metal-oxide-semiconductor capacitors with sulfur passivation

International Nuclear Information System (INIS)

Tan Zhen; Zhao Lian-Feng; Wang Jing; Xu Jun

2014-01-01

Interfacial and electrical properties of HfAlO/GaSb metal-oxide-semiconductor capacitors (MOSCAPs) with sulfur passivation were investigated and the chemical mechanisms of the sulfur passivation process were carefully studied. It was shown that the sulfur passivation treatment could reduce the interface trap density D it of the HfAlO/GaSb interface by 35% and reduce the equivalent oxide thickness (EOT) from 8 nm to 4 nm. The improved properties are due to the removal of the native oxide layer, as was proven by x-ray photoelectron spectroscopy measurements and high-resolution cross-sectional transmission electron microscopy (HRXTEM) results. It was also found that GaSb-based MOSCAPs with HfAlO gate dielectrics have interfacial properties superior to those using HfO 2 or Al 2 O 3 dielectric layers. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

Feasibility study of using thin aluminum nitride film as a buffer layer for dual metal gate process

International Nuclear Information System (INIS)

Park, Chang Seo; Cho, Byung Jin; Balasubramanian, N.; Kwong, Dim-Lee

2004-01-01

We evaluated the feasibility of using an ultra thin aluminum nitride (AlN) buffer layer for dual metal gates CMOS process. Since the buffer layer should not affect the thickness of gate dielectric, it should be removed or consumed during subsequent process. In this work, it was shown that a thin AlN dielectric layer would be reacted with initial gate metals and would be consumed during subsequent annealing, resulting in no increase of equivalent oxide thickness (EOT). The reaction of AlN layer with tantalum (Ta) and hafnium (Hf) during subsequent annealing, which was confirmed with X-ray photoelectron spectroscopy (XPS) analysis, shifted the flat-band voltage of AlN buffered MOS capacitors. No contribution to equivalent oxide thickness (EOT) was also an indication showing the full consumption of AIN, which was confirmed with TEM analysis. The work functions of gate metals were modulated through the reaction, suggesting that the consumption of AlN resulted in new thin metal alloys. Finally, it was found that the barrier heights of the new alloys were consistent with their work functions

Oxide thickness measurement for monitoring fuel performance at high burnup

International Nuclear Information System (INIS)

Jaeger, M.A.; Van Swam, L.F.P.; Brueck-Neufeld, K.

1991-01-01

For on-site monitoring of the fuel performance at high burnup, Advanced Nuclear Fuels uses the linear scan eddy current method to determine the oxide thickness of irradiated Zircaloy fuel cans. Direct digital data acquisition methods are employed to collect the data on magnetic storage media. This field-proven methodology allows oxide thickness measurements and rapid interpretation of the data during the reactor outages and makes it possible to immediately reinsert the assemblies for the next operating cycle. The accuracy of the poolside measurements and data acquisition/interpretation techniques have been verified through hot cell metallographic measurements of rods previously measured in the fuel pool. The accumulated data provide a valuable database against which oxide growth models have been benchmarked and allow for effective monitoring of fuel performance. (orig.) [de

Impact of oxide thickness on SEGR failure in vertical power MOSFETs: Development of a semi-empirical expression

International Nuclear Information System (INIS)

Titus, J.L.; Wheatley, C.F.; Burton, D.I.; Mouret, I.; Allenspach, M.; Brews, J.; Schrimpf, R.; Galloway, K.; Pease, R.L.

1995-01-01

This paper investigates the role that the gate oxide thickness (T ox ) plays on the gate and drain failure threshold voltages required to induce the onset of single-event gate rupture (SEGR). The impact of gate oxide thickness on SEGR is experimentally determined from vertical power metal-oxide semiconductor field-effect transistors (MOSFETs) having identical process and design parameters, except for the gate oxide thickness. Power MOSFETs from five variants were specially fabricated with nominal gate oxide thicknesses of 30, 50, 70, 100, and 150 nm. Devices from each variant were characterized to mono-energetic ion beams of Nickel, Bromine, Iodine, and Gold, Employing different bias conditions, failure thresholds for the onset of SEGR were determined for each oxide thickness. Applying these experimental test results, the previously published empirical expression is extended to include the effects of gate oxide thickness. In addition, observations of ion angle, temperature, cell geometry, channel conductivity, and curvature at high drain voltages are briefly discussed

Thickness measurement of a thin hetero-oxide film with an interfacial oxide layer by X-ray photoelectron spectroscopy

Science.gov (United States)

Kim, Kyung Joong; Lee, Seung Mi; Jang, Jong Shik; Moret, Mona

2012-02-01

The general equation Tove = L cos θ ln(Rexp/R0 + 1) for the thickness measurement of thin oxide films by X-ray photoelectron spectroscopy (XPS) was applied to a HfO2/SiO2/Si(1 0 0) as a thin hetero-oxide film system with an interfacial oxide layer. The contribution of the thick interfacial SiO2 layer to the thickness of the HfO2 overlayer was counterbalanced by multiplying the ratio between the intensity of Si4+ from a thick SiO2 film and that of Si0 from a Si(1 0 0) substrate to the intensity of Si4+ from the HfO2/SiO2/Si(1 0 0) film. With this approximation, the thickness levels of the HfO2 overlayers showed a small standard deviation of 0.03 nm in a series of HfO2 (2 nm)/SiO2 (2-6 nm)/Si(1 0 0) films. Mutual calibration with XPS and transmission electron microscopy (TEM) was used to verify the thickness of HfO2 overlayers in a series of HfO2 (1-4 nm)/SiO2 (3 nm)/Si(1 0 0) films. From the linear relation between the thickness values derived from XPS and TEM, the effective attenuation length of the photoelectrons and the thickness of the HfO2 overlayer could be determined.

Thickness-Dependent Bioelectrochemical and Energy Applications of Thickness-Controlled Meso-Macroporous Antimony-Doped Tin Oxide

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Daniel Mieritz

2018-04-01

Full Text Available Coatings of hierarchically meso-macroporous antimony-doped tin oxide (ATO enable interfacing adsorbed species, such as biomacromolecules, with an electronic circuit. The coating thickness is a limiting factor for the surface coverage of adsorbates, that are electrochemically addressable. To overcome this challenge, a carbon black-based templating method was developed by studying the composition of the template system, and finding the right conditions for self-standing templates, preventing the reaction mixture from flowing out of the mask. The thicknesses of as-fabricated coatings were measured using stylus profilometry to establish a relationship between the mask thickness and the coating thickness. Cyclic voltammetry was performed on coatings with adsorbed cytochrome c to check whether the entire coating thickness was electrochemically addressable. Further, bacterial photosynthetic reaction centers were incorporated into the coatings, and photocurrent with respect to coating thickness was studied. The template mixture required enough of both carbon black and polymer, roughly 7% carbon black and 6% poly(ethylene glycol. Coatings were fabricated with thicknesses approaching 30 µm, and thickness was shown to be controllable up to at least 15 µm. Under the experimental conditions, photocurrent was found to increase linearly with the coating thickness, up to around 12 µm, above which were diminished gains.

Effect of ultrathin GeOx interfacial layer formed by thermal oxidation on Al2O3 capped Ge

International Nuclear Information System (INIS)

Han Le; Zhang Xiong; Wang Sheng-Kai; Xue Bai-Qing; Liu Hong-Gang; Wu Wang-Ran; Zhao Yi

2014-01-01

We propose a modified thermal oxidation method in which an Al 2 O 3 capping layer is used as an oxygen blocking layer (OBL) to form an ultrathin GeO x interfacial layer, and obtain a superior Al 2 O 3 /GeO x /Ge gate stack. The GeO x interfacial layer is formed in oxidation reaction by oxygen passing through the Al 2 O 3 OBL, in which the Al 2 O 3 layer could restrain the oxygen diffusion and suppress the GeO desorption during thermal treatment. The thickness of the GeO x interfacial layer would dramatically decrease as the thickness of Al 2 O 3 OBL increases, which is beneficial to achieving an ultrathin GeO x interfacial layer to satisfy the demand for small equivalent oxide thickness (EOT). In addition, the thickness of the GeO x interfacial layer has little influence on the passivation effect of the Al 2 O 3 /Ge interface. Ge (100) p-channel metal–oxide–semiconductor field-effect transistors (pMOSFETs) using the Al 2 O 3 /GeO x /Ge gate stacks exhibit excellent electrical characteristics; that is, a drain current on-off (I on /I off ) ratio of above 1×10 4 , a subthreshold slope of ∼ 120 mV/dec, and a peak hole mobility of 265 cm 2 /V·s are achieved. (condensed matter: structural, mechanical, and thermal properties)

Measurement of oxide-layer thickness of internal granules in high-purity aluminium

International Nuclear Information System (INIS)

Takacs, S.; Ditroi, F.; Mahunka, I.

1989-01-01

Charged-particle activation analysis was used for the determination of bulk oxygen concentration in aluminium. High-purity aluminium samples and mixtures containing different amounts of alumina were irradiated by 13 MeV 3 He particles. The aim of the investigation was to determine the oxide-layer thickness on the surface of internal aluminium granules. The measurement was carried out by determining the bulk oxygen concentration in the samples, and calculating the oxide-layer thickness, by using model conditions about the microstructure of the aluminium samples. (author) 5 refs

Effect of Thickness on Oxidation Behavior of Cr coated Zircaloy-4 using Arc Ion Plating

Energy Technology Data Exchange (ETDEWEB)

Kim, Eui Jung; Kim, Sun Jin [Hanyang University, Seoul (Korea, Republic of); Park, Jung Hwan; Kim, Hyun Gil; Jung, Yang Il; Park, Dong Jun [KAERI, Daejeon (Korea, Republic of)

2016-05-15

Ever since the Fukushima accident, accident tolerant fuel (ATF) has been widely studied. To increase the life time and safety of nuclear claddings, there are increasing demands for protective coatings exhibiting excellent oxidation resistance. Many metal and oxide films are produced by using this method because of the high kinetic energy of the ions, ionization efficiency and deposition rate. Candidate materials for a protective layer have higher thermal neutron absorption cross sections than Zr. However, there is no systematic study of thickness effect on oxidation resistance of protective layer. In this study, Cr films with different thickness (from 1 μm to 50 μm) were deposited on the cladding surfaces by AIP. The high temperature oxidation resistance of Cr films with different thicknesses has been investigated. Uniform oxide layer with nanoporous structures have been fabricated on the surface of Zr-Nb-Sn alloy. Oxidation behavior of the pristine Zr-Nb-Sn alloy and the Zr-Nb-Sn alloy with nanostructured oxide layer evaluated by measuring weight gain (TGA).

A comparison of Zircaloy oxide thicknesses on Millstone-3 and North Anna-1 PWR fuel cladding

International Nuclear Information System (INIS)

Polley, M.V.; Evans, H.E.

1993-08-01

High concentrations of lithium in the coolant may enhance the corrosion rate of Zircaloy fuel cladding. In the present work, oxide thicknesses on fuel cladding from the Millstone 3 PWR were compared with those from the North Anna 1 PWR. The intention was to identify whether the higher lithium levels (up to 3.5 ppM) in the Millstone 3 primary coolant during cycles 2 and 3 led to significantly greater oxidation rates than in North Anna 1 which operated generally with lithium levels lower than 2.2 ppM. The comparisons were made by comparing the measurements with code predictions of Zircaloy oxidation in order to factor out the effect of operational variables on the oxide thicknesses achieved. Overall, Millstone 3 oxide thicknesses were found to be approximately 14% greater than North Anna 1 values. However, approximately 29% lower oxide thicknesses were found on reload Millstone 3 rods exposed to one cycle of elevated lithium chemistry than on Millstone 3 initial fuel exposed to one cycle of normal lithium chemistry during cycle 1. Furthermore, oxide thicknesses on Millstone 3 rods exposed to two cycles of elevated lithium chemistry were approximately 36% lower than on Millstone 3 rods exposed to one cycle of normal lithium chemistry plus one cycle of elevated lithium chemistry. Therefore, it cannot be concluded that elevated lithium operation in Millstone 3 led to enhanced Zircaloy fuel clad corrosion

Ellipsometry measurements of thickness of oxide and water layers on spherical and flat silicon surfaces

International Nuclear Information System (INIS)

Kenny, M.J.; Netterfield, R.; Wielunski, L.S.

1998-01-01

Full text: Ellipsometry has been used to measure the thickness of oxide layers on single crystal silicon surfaces, both flat and spherical and also to measure the extent of adsorption of moisture on the surface as a function of partial water vapour pressure. The measurements form part of an international collaborative project to make a precise determination of the Avogadro constant (ΔN A /N A -8 ) which will then be used to obtain an absolute definition of the kilogram, rather than one in terms of an artefact. Typically the native oxide layer on a cleaned silicon wafer is about 2 nm thick. On a polished sphere this oxide layer is typically 8 to 10 nm thick, the increased thickness being attributed to parameters related to the polishing process. Ellipsometry measurements on an 89 mm diameter polished silicon sphere at both VUW and CSIRO indicated a SiO 2 layer at 7 to 10 nm thick. It was observed that this thickness varied regularly. The crystal orientation of the sphere was determined using electron patterns generated from an electron microscope and the oxide layer was then measured through 180 arcs of great circles along (110) and (100) planes. It was observed that the thickness varied systematically with orientation. The minimum thickness was 7.4 nm at the axis (softest direction in silicon) and the greatest thickness was 9.5 nm at the axis (hardest direction in silicon). This is similar to an orientation dependent cubic pattern which has been observed to be superimposed on polished silicon spheres. At VUW, the sphere was placed in an evacuated bell jar and the ellipsometry signal was observed as the water vapour pressure was progressively increased up to saturation. The amount of water vapour adsorbed at saturation was one or two monolayers, indicating that the sphere does not wet

Studies on Gas Sensing Performance of Cr-doped Indium Oxide Thick Film Sensors

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D. N. Chavan

2011-02-01

Full Text Available A series of In1-xCrxO3 composites, with x ranging from 0.01 to 0.5wt% were prepared by mechanochemically starting from InCl3 and CrO3. Structural and micro structural characteristics of the sample were investigated by XRD, SEM with EDAX. Thick films of pure Indium Oxide and composites were prepared by standard screen printing technique. The gas sensitivity of these thick films was tested for various gases. The pure Indium Oxide thick film (x=0 shows maximum sensitivity to ethanol vapour (80 ppm at 350 oC, but composite-A (x=0.01 thick film shows maximum sensitivity to H2S gas (40 ppm at 250 oC, composite-B (x=0.1 thick film shows higher sensitivity to NH3 gas (80 ppm at 250 oC and composite-C (x=0.5 thick film shows maximum sensitivity to Cl2 gas (80 ppm at 350 oC. A systematic study of gas sensing performance of the sensors indicates the key role played by concentration variation of Cr doped species. The sensitivity, selectivity and recovery time of the sensor were measured and presented.

Oxide thickness measurement technique for duplex-layer Zircaloy-4 cladding

International Nuclear Information System (INIS)

McClelland, R.G.; O'Leary, P.M.

1992-01-01

Siemens Nuclear Power Corporation (SNP) is investigating the use of duplex-layer Zircaloy-4 tubing to improve the waterside corrosion resistance of cladding for high-burnup pressurized water reactor (PWR) fuel designs. Standard SNP PWR cladding is typically 0.762-mm (0.030-in.)-thick Zircaloy-4. The SNP duplex cladding is nominally 0.660-mm (0.026-in.)-thick Zircalloy-4 with an ∼0.102-mm (0.004-in.) outer layer of another, more corrosion-resistant, zirconium-based alloy. It is common industry practice to monitor the in-reactor corrosion behavior of Zircaloy cladding by using an eddy-current 'lift-off' technique to measure the oxide thickness on the outer surface of the fuel cladding. The test program evaluated three different cladding samples, all with the same outer diameter and wall thickness: Zircaloy-4 and duplex clad types D2 and D4

Changes in Nitric Oxide Level and Thickness Index of Synovial Fluid ...

African Journals Online (AJOL)

Changes in Nitric Oxide Level and Thickness Index of Synovial Fluid in Osteoarthritis Patients ... Tropical Journal of Pharmaceutical Research ... and moderate phase patients after intra-articular injection of sodium hyaluronate, while the effect ...

Influence of ultra-thin TiN thickness (1.4 nm and 2.4 nm) on positive bias temperature instability (PBTI) of high-k/metal gate nMOSFETs with gate-last process

International Nuclear Information System (INIS)

Qi Lu-Wei; Yang Hong; Ren Shang-Qing; Xu Ye-Feng; Luo Wei-Chun; Xu Hao; Wang Yan-Rong; Tang Bo; Wang Wen-Wu; Yan Jiang; Zhu Hui-Long; Zhao Chao; Chen Da-Peng; Ye Tian-Chun

2015-01-01

The positive bias temperature instability (PBTI) degradations of high-k/metal gate (HK/MG) nMOSFETs with thin TiN capping layers (1.4 nm and 2.4 nm) are systemically investigated. In this paper, the trap energy distribution in gate stack during PBTI stress is extracted by using ramped recovery stress, and the temperature dependences of PBTI (90 °C, 125 °C, 160 °C) are studied and activation energy (E a ) values (0.13 eV and 0.15 eV) are extracted. Although the equivalent oxide thickness (EOT) values of two TiN thickness values are almost similar (0.85 nm and 0.87 nm), the 2.4-nm TiN one (thicker TiN capping layer) shows better PBTI reliability (13.41% at 0.9 V, 90 °C, 1000 s). This is due to the better interfacial layer/high-k (IL/HK) interface, and HK bulk states exhibited through extracting activation energy and trap energy distribution in the high-k layer. (paper)

Effects of stress on the oxide layer thickness and post-oxidation creep strain of zircaloy-4

International Nuclear Information System (INIS)

Lim, Sang Ho; Yoon, Young Ku

1986-01-01

Effects of compressive stress generated in the oxide layer and its subsequent relief on oxidation rate and post-oxidation creep characteristics of zircaloy-4 were investigated by oxidation studies in steam with and without applied tensile stress and by creep testing at 700 deg C in high purity argon. The thickness of oxide layer increased with the magnitude of tensile stress applied during oxidation at 650 deg C in steam whereas similar phenomenon was not observed during oxidation at 800 deg C. Zircaloy-4 specimens oxidized at 600 deg C in steam without applied stress exhibited higher creep strain than that shown by unoxidized specimens when creep-tested in argon. Zircaloy-4 specimens oxidized at 600 deg C steam under the applied stress of 8.53MPa and oxidized at 800 deg C under the applied stress of 0 and 8.53MPa exhibited lower strain than that shown by unoxidized specimen. The above experimental results were accounted for on the basis of interactions among applied stress during oxidation, compressive stress generated in the oxide layer and elasticity of zircaloy-4 matrix. (Author)

A direct current potential drop method for evaluating oxide film thickness formed in high-temperature water

International Nuclear Information System (INIS)

Anzai, Hideya; Ishibashi, Ryo; Saka, Masumi

2016-01-01

To establish an evaluation technique for oxide film thickness in-situ, the applicability of a four-point-probe direct current potential drop method is discussed in this study. Several samples of JIS SUS316L stainless steel with different oxide film thickness were prepared after immersing them in oxygenated pure water at 288°C for different periods. The oxide film thickness was measured by cross sectional observation using a transmission electron microscope. Potential drop on the oxide surface was measured every second during an acquisition period of about 20 s while a constant current was being injected into the sample simultaneously. This kind of measurement was repeatedly carried out at several arbitrary contact positions on the surface of the same sample. The measurement results showed that the potential drop slightly changed during the acquisition period and the tendency varied at the different contact positions. Multiple measurements at different contact positions revealed that the tendency could be categorized into two general types: the decreasing potential drop and the increasing potential drop, defined by the overall trend of the potential drop during the acquisition time. It was found that the ratio of contact positions with a decreasing potential drop tendency to all the contact positions of measurement tended to increase as applied current increased. This tendency depended on the oxide film thickness. The threshold value of applied current was found to correlate well with the oxide film thickness when the occurrence rate of decreasing potential drop ranged from 70 to 90% showing the best correlation at 70%. (author)

Determination of oxide film thickness on aluminium using 14-MeV neutron activation and BET method

International Nuclear Information System (INIS)

Foerster, H.

1983-01-01

A new method is described for the determination of the mean film thickness of aluminium oxides by 14-MeV neutron activation analysis of the oxygen and by BET measurement of the surface area. The mean film thickness obtained is independent of the surface roughness. Stable oxide films consisting of only a few atomic layers of oxygen are detected on aluminium. (author)

CANDU fuel sheath integrity and oxide layer thickness determination by Eddy current technique

International Nuclear Information System (INIS)

Gheorghe, Gabriela; Man, Ion; Parvan, Marcel; Valeca, Serban

2010-01-01

This paper presents results concerning the integrity assessment of the fuel elements cladding and measurements of the oxide layer on sheaths, using the eddy current technique. Flaw detection using eddy current provides information about the integrity of fuel element sheath or presence of defects in the sheath produced by irradiation. The control equipment consists of a flaw detector with eddy currents, operable in the frequency range 10 Hz to 10 MHz, and a differential probe. The calibration of the flaw detector is done using artificial defects (longitudinal, transversal, external and internal notches, bored and unbored holes) obtained on Zircaloy-4 tubes identical to those out of which the sheath of the CANDU fuel element is manufactured (having a diameter of 13.08 mm and a wall thickness of 0.4 mm). When analyzing the behavior of the fuel elements' cladding facing the corrosion is important to know the thickness of the zirconium oxide layer. The calibration of the device measuring the thickness of the oxide layer is done using a Zircaloy-4 tube identical to that which the cladding of the CANDU fuel element is manufactured of, and calibration foils, as well. (authors)

The application of the barrier-type anodic oxidation method to thickness testing of aluminum films

Science.gov (United States)

Chen, Jianwen; Yao, Manwen; Xiao, Ruihua; Yang, Pengfei; Hu, Baofu; Yao, Xi

2014-09-01

The thickness of the active metal oxide film formed from a barrier-type anodizing process is directly proportional to its formation voltage. The thickness of the consumed portion of the metal film is also corresponding to the formation voltage. This principle can be applied to the thickness test of the metal films. If the metal film is growing on a dielectric substrate, when the metal film is exhausted in an anodizing process, because of the high electrical resistance of the formed oxide film, a sudden increase of the recorded voltage during the anodizing process would occur. Then, the thickness of the metal film can be determined from this voltage. As an example, aluminum films are tested and discussed in this work. This method is quite simple and is easy to perform with high precision.

Direct comparison of the electrical properties in metal/oxide/nitride/oxide/silicon and metal/aluminum oxide/nitride/oxide/silicon capacitors with equivalent oxide thicknesses

Energy Technology Data Exchange (ETDEWEB)

An, Ho-Myoung; Seo, Yu Jeong; Kim, Hee Dong; Kim, Kyoung Chan; Kim, Jong-Guk [School of Electrical Engineering, Korea University, Seoul 136-713 (Korea, Republic of); Cho, Won-Ju; Koh, Jung-Hyuk [Department of Electronic Materials Engineering, Kwangwoon University, Seoul 139-701 (Korea, Republic of); Sung, Yun Mo [Department of Materials and Science Engineering, Korea University, Seoul 136-713 (Korea, Republic of); Kim, Tae Geun, E-mail: tgkim1@korea.ac.k [School of Electrical Engineering, Korea University, Seoul 136-713 (Korea, Republic of)

2009-07-31

We examine the electrical properties of metal/oxide/nitride/oxide/silicon (MONOS) capacitors with two different blocking oxides, SiO{sub 2} and Al{sub 2}O{sub 3}, under the influence of the same electric field. The thickness of the Al{sub 2}O{sub 3} layer is set to 150 A, which is electrically equivalent to a thickness of the SiO{sub 2} layer of 65 A, in the MONOS structure for this purpose. The capacitor with the Al{sub 2}O{sub 3} blocking layer shows a larger capacitance-voltage memory window of 8.6 V, lower program voltage of 7 V, faster program/erase speeds of 10 ms/1 {mu}s, lower leakage current of 100 pA and longer data retention than the one with the SiO{sub 2} blocking layer does. These improvements are attributed to the suppression of the carrier transport to the gate electrode afforded by the use of an Al{sub 2}O{sub 3} blocking layer physically thicker than the SiO{sub 2} one, as well as the effective charge-trapping by Al{sub 2}O{sub 3} at the deep energy levels in the nitride layer.

CdO Doped Indium Oxide Thick Film as a Low Temperature H2S Gas Sensor

Directory of Open Access Journals (Sweden)

D. N. CHAVAN

2011-06-01

Full Text Available The thick films of AR grade In2O3 were prepared by standard screen-printing technique. The gas sensing performance of thick film was tested for various gases. It showed maximum gas response to ethanol vapor at 350 oC for 80 ppm. To improve the gas response and selectivity of the film towards a particular gas, In2O3 thick films were modified by dipping them in an aqueous solution of 0.1 M CdCl2 for different intervals of time. The surface modified (10 min In2O3 thick film showed maximum response to H2S gas (10 ppm than pure In2O3 thick film at 150 oC. Cadmium oxide on the surface of the film shifts the gas response from ethanol vapor to H2S gas. A systematic study of sensing performance of the thick films indicates the key role played by cadmium oxide on the surface of thick films. The selectivity, gas response and recovery time of the thick films were measured and presented.

Studies on Gas Sensing Performance of Pure and Surface Chrominated Indium Oxide Thick Film Resistors

Directory of Open Access Journals (Sweden)

D. N. CHAVAN

2010-12-01

Full Text Available The thick films of AR grade In2O3 were prepared by standard screen-printing technique. The gas sensing performance of thick film was tested for various gases. It showed maximum gas response to ethanol vapor at 350 oC for 80 ppm. To improve the gas response and selectivity of the film towards a particular gas, In2O3 thick films were modified by dipping them in an aqueous solution of 0.1 M CrO3 for different intervals of time. The surface chrominated (20 min In2O3 thick film showed maximum response to H2S gas (40 ppm than pure In2O3 thick film at 250 oC. Chromium oxide on the surface of the film shifts the gas response from ethanol vapor to H2S gas. A systematic study of sensing performance of the sensor indicates the key role played by chromium oxide on the surface of thick film. The selectivity, gas response and recovery time of the sensor were measured and presented.

Yttrium scandate thin film as alternative high-permittivity dielectric for germanium gate stack formation

Energy Technology Data Exchange (ETDEWEB)

Lu, Cimang, E-mail: cimang@adam.t.u-tokyo.ac.jp; Lee, Choong Hyun; Nishimura, Tomonori; Toriumi, Akira [Department of Materials Engineering, The University of Tokyo, 7-3-1 Hongo, Tokyo 113-8656 (Japan); JST, CREST, 7-3-1 Hongo, Tokyo 113-8656 (Japan)

2015-08-17

We investigated yttrium scandate (YScO{sub 3}) as an alternative high-permittivity (k) dielectric thin film for Ge gate stack formation. Significant enhancement of k-value is reported in YScO{sub 3} comparing to both of its binary compounds, Y{sub 2}O{sub 3} and Sc{sub 2}O{sub 3}, without any cost of interface properties. It suggests a feasible approach to a design of promising high-k dielectrics for Ge gate stack, namely, the formation of high-k ternary oxide out of two medium-k binary oxides. Aggressive scaling of equivalent oxide thickness (EOT) with promising interface properties is presented by using YScO{sub 3} as high-k dielectric and yttrium-doped GeO{sub 2} (Y-GeO{sub 2}) as interfacial layer, for a demonstration of high-k gate stack on Ge. In addition, we demonstrate Ge n-MOSFET performance showing the peak electron mobility over 1000 cm{sup 2}/V s in sub-nm EOT region by YScO{sub 3}/Y-GeO{sub 2}/Ge gate stack.

Usage of neural network to predict aluminium oxide layer thickness.

Science.gov (United States)

Michal, Peter; Vagaská, Alena; Gombár, Miroslav; Kmec, Ján; Spišák, Emil; Kučerka, Daniel

2015-01-01

This paper shows an influence of chemical composition of used electrolyte, such as amount of sulphuric acid in electrolyte, amount of aluminium cations in electrolyte and amount of oxalic acid in electrolyte, and operating parameters of process of anodic oxidation of aluminium such as the temperature of electrolyte, anodizing time, and voltage applied during anodizing process. The paper shows the influence of those parameters on the resulting thickness of aluminium oxide layer. The impact of these variables is shown by using central composite design of experiment for six factors (amount of sulphuric acid, amount of oxalic acid, amount of aluminium cations, electrolyte temperature, anodizing time, and applied voltage) and by usage of the cubic neural unit with Levenberg-Marquardt algorithm during the results evaluation. The paper also deals with current densities of 1 A · dm(-2) and 3 A · dm(-2) for creating aluminium oxide layer.

Usage of Neural Network to Predict Aluminium Oxide Layer Thickness

Directory of Open Access Journals (Sweden)

Peter Michal

2015-01-01

Full Text Available This paper shows an influence of chemical composition of used electrolyte, such as amount of sulphuric acid in electrolyte, amount of aluminium cations in electrolyte and amount of oxalic acid in electrolyte, and operating parameters of process of anodic oxidation of aluminium such as the temperature of electrolyte, anodizing time, and voltage applied during anodizing process. The paper shows the influence of those parameters on the resulting thickness of aluminium oxide layer. The impact of these variables is shown by using central composite design of experiment for six factors (amount of sulphuric acid, amount of oxalic acid, amount of aluminium cations, electrolyte temperature, anodizing time, and applied voltage and by usage of the cubic neural unit with Levenberg-Marquardt algorithm during the results evaluation. The paper also deals with current densities of 1 A·dm−2 and 3 A·dm−2 for creating aluminium oxide layer.

Angiotensin II stimulates superoxide production by nitric oxide synthase in thick ascending limbs.

Science.gov (United States)

Gonzalez-Vicente, Agustin; Saikumar, Jagannath H; Massey, Katherine J; Hong, Nancy J; Dominici, Fernando P; Carretero, Oscar A; Garvin, Jeffrey L

2016-02-01

Angiotensin II (Ang II) causes nitric oxide synthase (NOS) to become a source of superoxide (O2 (-)) via a protein kinase C (PKC)-dependent process in endothelial cells. Ang II stimulates both NO and O2 (-) production in thick ascending limbs. We hypothesized that Ang II causes O2 (-) production by NOS in thick ascending limbs via a PKC-dependent mechanism. NO production was measured in isolated rat thick ascending limbs using DAF-FM, whereas O2 (-) was measured in thick ascending limb suspensions using the lucigenin assay. Consistent stimulation of NO was observed with 1 nmol/L Ang II (P thick ascending limbs via a PKC- and NADPH oxidase-dependent process; and (2) the effect of Ang II is not due to limited substrate. © 2016 The Authors. Physiological Reports published by Wiley Periodicals, Inc. on behalf of the American Physiological Society and The Physiological Society.

The Effect of Thickness and Chemical Reduction of Graphene Oxide on Nanoscale Friction.

Science.gov (United States)

Kwon, Sangku; Lee, Kyung Eun; Lee, Hyunsoo; Koh, Sang Joon; Ko, Jae-Hyeon; Kim, Yong-Hyun; Kim, Sang Ouk; Park, Jeong Young

2018-01-18

The tribological properties of two-dimensional (2D) atomic layers are quite different from three-dimensional continuum materials because of the unique mechanical responses of 2D layers. It is known that friction on graphene shows a remarkable decreasing behavior as the number of layers increases, which is caused by the puckering effect. On other graphene derivatives, such as graphene oxide (GO) or reduced graphene oxide (rGO), the thickness dependence of friction is important because of the possibilities for technical applications. In this report, we demonstrate unexpected layer-dependent friction behavior on GO and rGO layers. Friction force microscopy measurements show that nanoscale friction on GO does not depend on the number of layers; however, after reduction, friction on rGO shows an inverse thickness dependence compared with pristine graphene. We show that the friction on rGO is higher than that on SiO 2 at low load, and that an interesting crossover behavior at higher load occurs because of the lower friction coefficient and higher adhesion of the rGO. We provide a relevant interpretation that explains the effect of thickness and chemical reduction on nanoscale friction.

Preparation and spectroscopic analysis of zinc oxide nanorod thin films of different thicknesses

Directory of Open Access Journals (Sweden)

Mia Nasrul Haque

2017-10-01

Full Text Available Zinc oxide thin films with different thicknesses were prepared on microscopic glass slides by sol-gel spin coating method, then hydrothermal process was applied to produce zinc oxide nanorod arrays. The nanorod thin films were characterized by various spectroscopic methods of analysis. From the images of field emission scanning electron microscope (FESEM, it was observed that for the film thickness up to 200 nm the formed nanorods with wurtzite hexagonal structure were uniformly distributed over the entire surface substrate. From X-ray diffraction analysis it was revealed that the thin films had good polycrystalline nature with highly preferred c-axis orientation along (0 0 2 plane. The optical characterization done by UV-Vis spectrometer showed that all the films had high transparency of 83 % to 96 % in the visible region and sharp cut off at ultraviolet region of electromagnetic spectrum. The band gap of the films decreased as their thickness increased. Energy dispersive X-ray spectroscopy (EDS showed the presence of zinc and oxygen elements in the films and Fourier transform infrared spectroscopy (FT-IR revealed the chemical composition of ZnO in the film.

Numerical Simulation of Tunneling Current in an Anisotropic Metal-Oxide-Semiconductor Capacitor

Directory of Open Access Journals (Sweden)

Khairurrijal khairurrijal

2012-09-01

Full Text Available In this paper, we have developed a model of the tunneling currents through a high-k dielectric stack in MOS capacitors with anisotropic masses. The transmittance was numerically calculated by employing a transfer matrix method and including longitudinal-transverse kinetic energy coupling which is represented by an electron phase velocity in the gate. The transmittance was then applied to calculate tunneling currents in TiN/HfSiOxN/SiO2/p-Si MOS capacitors. The calculated results show that as the gate electron velocity increases, the transmittance decreases and therefore the tunneling current reduces. The tunneling current becomes lower as the effective oxide thickness (EOT of HfSiOxN layer increases. When the incident electron passed through the barriers in the normal incident to the interface, the electron tunneling process becomes easier. It was also shown that the tunneling current was independent of the substrate orientation. Moreover, the model could be used in designing high speed MOS devices with low tunneling currents.

Electrical and materials properties of ZrO2 gate dielectrics grown by atomic layer chemical vapor deposition

Science.gov (United States)

Perkins, Charles M.; Triplett, Baylor B.; McIntyre, Paul C.; Saraswat, Krishna C.; Haukka, Suvi; Tuominen, Marko

2001-04-01

Structural and electrical properties of gate stack structures containing ZrO2 dielectrics were investigated. The ZrO2 films were deposited by atomic layer chemical vapor deposition (ALCVD) after different substrate preparations. The structure, composition, and interfacial characteristics of these gate stacks were examined using cross-sectional transmission electron microscopy and x-ray photoelectron spectroscopy. The ZrO2 films were polycrystalline with either a cubic or tetragonal crystal structure. An amorphous interfacial layer with a moderate dielectric constant formed between the ZrO2 layer and the substrate during ALCVD growth on chemical oxide-terminated silicon. Gate stacks with a measured equivalent oxide thickness (EOT) of 1.3 nm showed leakage values of 10-5 A/cm2 at a bias of -1 V from flatband, which is significantly less than that seen with SiO2 dielectrics of similar EOT. A hysteresis of 8-10 mV was seen for ±2 V sweeps while a midgap interface state density (Dit) of ˜3×1011 states/cm eV was determined from comparisons of measured and ideal capacitance curves.

Thickness-dependent photocatalytic performance of graphite oxide for degrading organic pollutants under visible light.

Science.gov (United States)

Oh, Junghoon; Chang, Yun Hee; Kim, Yong-Hyun; Park, Sungjin

2016-04-28

Photocatalysts use sustainable solar light energy to trigger various catalytic reactions. Metal-free nanomaterials have been suggested as cost-effective and environmentally friendly photocatalysts. In this work, we propose thickness-controlled graphite oxide (GO) as a metal-free photocatalyst, which is produced by exfoliating thick GO particles via stirring and sonication. All GO samples exhibit photocatalytic activity for degrading an organic pollutant, rhodamine B under visible light, and the thickest sample shows the best catalytic performance. UV-vis-NIR diffuse reflectance absorption spectra indicate that thicker GO samples absorb more vis-NIR light than thinner ones. Density-functional theory calculations show that GO has a much smaller band gap than that of single-layer graphene oxide, and thus suggest that the largely-reduced band gap is responsible for this trend of light absorption.

Analysis of zircaloy oxide thickness data from PWRs

International Nuclear Information System (INIS)

Sheppard, K.D.; Speyer, D.M.; Chan, Y.Y.; Frankl, I.; Strasser, A.A.

1990-02-01

Prior EPRI funded research (Project 1250-1) resulted in a set of Zircaloy waterside corrosion models. These models were based principally on KWU reactor data. The objective of this study was to evaluate the ability of the KWU corrosion models to predict available domestic USA data for all domestic PWR vendors in order to further validate the models and to provide a consistent basis to judge the corrosion data of the domestic plants. A methodology for analyzing the large amount of data was developed and implemented in a single channel model. This model includes the capability, by a method described herein, of accounting for open core related effects (crossflow) and the effect of the immediately adjacent fuel rods, guide tubes, etc., on the coolant conditions around the fuel rods that were measured for oxide thickness. Data from the Arkansas Unit number-sign 2 (ANO-2) Combustion Engineering (C-E), Oconee Units 1 and 2 built by Babcock ampersand Wilcox (B ampersand W), and the Trojan reactor built by Westinghouse (W) were used in this study. The corrosion models previously developed, and the present single channel model methodology, were able to predict the corrosion data quite well. The maximum corrosion thickness was on the order of 20 to 40 microns in all plants studied. 13 refs., 11 figs., 5 tabs

Impact of metal nano layer thickness on tunneling oxide and memory performance of core-shell iridium-oxide nanocrystals

Energy Technology Data Exchange (ETDEWEB)

Banerjee, W.; Maikap, S. [Thin Film Nano Tech. Lab., Department of Electronic Engineering, Chang Gung University, Tao-Yuan, Taiwan 333, Taiwan (China); Tien, T.-C. [Material Research Laboratories, Industrial Technology Research Institute, Hsinchu, Taiwan 310, Taiwan (China); Li, W.-C.; Yang, J.-R. [Department of Materials Science and Engineering, National Taiwan University, Taipei 106, Taiwan (China)

2011-10-01

The impact of iridium-oxide (IrO{sub x}) nano layer thickness on the tunneling oxide and memory performance of IrO{sub x} metal nanocrystals in an n-Si/SiO{sub 2}/Al{sub 2}O{sub 3}/IrO{sub x}/Al{sub 2}O{sub 3}/IrO{sub x} structure has been investigated. A thinner (1.5 nm) IrO{sub x} nano layer has shown better memory performance than that of a thicker one (2.5 nm). Core-shell IrO{sub x} nanocrystals with a small average diameter of 2.4 nm and a high density of {approx}2 x 10{sup 12}/cm{sup 2} have been observed by scanning transmission electron microscopy. The IrO{sub x} nanocrystals are confirmed by x-ray photoelectron spectroscopy. A large memory window of 3.0 V at a sweeping gate voltage of {+-}5 V and 7.2 V at a sweeping gate voltage of {+-} 8 V has been observed for the 1.5 nm-thick IrO{sub x} nano layer memory capacitors with a small equivalent oxide thickness of 8 nm. The electrons and holes are trapped in the core and annular regions of the IrO{sub x} nanocrystals, respectively, which is explained by Gibbs free energy. High electron and hole-trapping densities are found to be 1.5 x 10{sup 13}/cm{sup 2} and 2 x 10{sup 13}/cm{sup 2}, respectively, due to the small size and high-density of IrO{sub x} nanocrystals. Excellent program/erase endurance of >10{sup 6} cycles and good retention of 10{sup 4} s with a good memory window of >1.2 V under a small operation voltage of {+-} 5 V are obtained. A large memory size of >10 Tbit/sq. in. can be designed by using the IrO{sub x} nanocrystals. This study is not only important for the IrO{sub x} nanocrystal charge-trapping memory investigation but it will also help to design future metal nanocrystal flash memory.

Impact of metal nano layer thickness on tunneling oxide and memory performance of core-shell iridium-oxide nanocrystals

International Nuclear Information System (INIS)

Banerjee, W.; Maikap, S.; Tien, T.-C.; Li, W.-C.; Yang, J.-R.

2011-01-01

The impact of iridium-oxide (IrO x ) nano layer thickness on the tunneling oxide and memory performance of IrO x metal nanocrystals in an n-Si/SiO 2 /Al 2 O 3 /IrO x /Al 2 O 3 /IrO x structure has been investigated. A thinner (1.5 nm) IrO x nano layer has shown better memory performance than that of a thicker one (2.5 nm). Core-shell IrO x nanocrystals with a small average diameter of 2.4 nm and a high density of ∼2 x 10 12 /cm 2 have been observed by scanning transmission electron microscopy. The IrO x nanocrystals are confirmed by x-ray photoelectron spectroscopy. A large memory window of 3.0 V at a sweeping gate voltage of ±5 V and 7.2 V at a sweeping gate voltage of ± 8 V has been observed for the 1.5 nm-thick IrO x nano layer memory capacitors with a small equivalent oxide thickness of 8 nm. The electrons and holes are trapped in the core and annular regions of the IrO x nanocrystals, respectively, which is explained by Gibbs free energy. High electron and hole-trapping densities are found to be 1.5 x 10 13 /cm 2 and 2 x 10 13 /cm 2 , respectively, due to the small size and high-density of IrO x nanocrystals. Excellent program/erase endurance of >10 6 cycles and good retention of 10 4 s with a good memory window of >1.2 V under a small operation voltage of ± 5 V are obtained. A large memory size of >10 Tbit/sq. in. can be designed by using the IrO x nanocrystals. This study is not only important for the IrO x nanocrystal charge-trapping memory investigation but it will also help to design future metal nanocrystal flash memory.

Investigation of structural and electrical properties on substrate material for high frequency metal-oxide-semiconductor (MOS) devices

Science.gov (United States)

Kumar, M.; Yang, Sung-Hyun; Janardhan Reddy, K.; JagadeeshChandra, S. V.

2017-04-01

Hafnium oxide (HfO2) thin films were grown on cleaned P-type Ge and Si substrates by using atomic layer deposition technique (ALD) with thickness of 8 nm. The composition analysis of as-deposited and annealed HfO2 films was characterized by XPS, further electrical measurements; we fabricated the metal-oxide-semiconductor (MOS) devices with Pt electrode. Post deposition annealing in O2 ambient at 500 °C for 30 min was carried out on both Ge and Si devices. Capacitance-voltage (C-V) and conductance-voltage (G-V) curves measured at 1 MHz. The Ge MOS devices showed improved interfacial and electrical properties, high dielectric constant (~19), smaller EOT value (0.7 nm), and smaller D it value as Si MOS devices. The C-V curves shown significantly high accumulation capacitance values from Ge devices, relatively when compare with the Si MOS devices before and after annealing. It could be due to the presence of very thin interfacial layer at HfO2/Ge stacks than HfO2/Si stacks conformed by the HRTEM images. Besides, from current-voltage (I-V) curves of the Ge devices exhibited similar leakage current as Si devices. Therefore, Ge might be a reliable substrate material for structural, electrical and high frequency applications.

Reaction products between Bi-Sr-Ca-Cu-oxide thick films and alumina substrates

International Nuclear Information System (INIS)

Alarco, J.A.; Ilushechkin, A.; Yamashita, T.; Bhargava, A.; Barry, J.; Mackinnon, I.D.R.

1997-01-01

The structure and composition of reaction products between Bi-Sr-Ca-Cu-oxide (BSCCO) thick films and alumina substrates have been characterized using a combination of electron diffraction, scanning electron microscopy and energy dispersive X-ray spectrometry (EDX). Sr and Ca are found to be the most reactive cations with alumina. Sr 4 Al 6 O 12 SO 4 is formed between the alumina substrates and BSCCO thick films prepared from paste with composition close to Bi-2212 (and Bi-2212+10 wt.% Ag). For paste with composition close to Bi(Pb)-2223 +20 wt.% Ag, a new phase with f.c.c. structure, lattice parameter about a=24.5 A and approximate composition Al 3 Sr 2 CaBi 2 CuO x has been identified in the interface region. Understanding and control of these reactions is essential for growth of high quality BSCCO thick films on alumina. (orig.)

Effect of a Mediterranean diet on endothelial progenitor cells and carotid intima-media thickness in type 2 diabetes: Follow-up of a randomized trial.

Science.gov (United States)

Maiorino, Maria Ida; Bellastella, Giuseppe; Petrizzo, Michela; Gicchino, Maurizio; Caputo, Mariangela; Giugliano, Dario; Esposito, Katherine

2017-03-01

Background We assessed the long-term effects of a Mediterranean diet on circulating levels of endothelial progenitor cells (EPCs) and the carotid intima-media thickness (CIMT) in patients with type 2 diabetes. Design This was a parallel, two-arm, single-centre trial. Methods Two hundred and fifteen men and women with newly diagnosed type 2 diabetes were randomized to a Mediterranean diet ( n = 108) or a low-fat diet ( n = 107). The primary outcome measures were changes in the EPC count and the CIMT of the common carotid artery after the treatment period defined as the end of trial (EOT). Results At the EOT, both the CD34 + KDR + and CD34 + KDR + CD133 + counts had increased with the Mediterranean diet compared with the low-fat diet ( p Mediterranean diet. Compared with the low-fat diet, the rate of regression in the CIMT was higher in the Mediterranean diet group (51 vs. 26%), whereas the rate of progression was lower (25 vs. 50%) ( p = 0.032 for both). Changes in the CIMT were inversely correlated with the changes in EPC levels (CD34 + KDR + , r = -0.24, p = 0.020; CD34 + KDR + CD133 + , r = -0.28, p = 0.014). At the EOT, changes in levels of HbA1c, HOMA, total cholesterol, high-density lipoprotein cholesterol and systolic blood pressure were significantly greater with the Mediterranean diet than with the low-fat diet. Conclusion Compared with a low-fat diet, a long-term trial with Mediterranean diet was associated with an increase in circulating EPCs levels and prevention of the progression of subclinical atherosclerosis in patients with newly diagnosed type 2 diabetes.

Resveratrol increases nitric oxide production in the rat thick ascending limb via Ca2+/calmodulin.

Science.gov (United States)

Gonzalez-Vicente, Agustin; Cabral, Pablo D; Garvin, Jeffrey L

2014-01-01

The thick ascending limb of the loop of Henle reabsorbs 30% of the NaCl filtered through the glomerulus. Nitric oxide (NO) produced by NO synthase 3 (NOS3) inhibits NaCl absorption by this segment. Resveratrol, a polyphenol, has beneficial cardiovascular and renal effects, many of which are mediated by NO. Resveratrol increases intracellular Ca2+ (Cai) and AMP kinase (AMPK) and NAD-dependent deacetylase sirtuin1 (SIRT1) activities, all of which could activate NO production. We hypothesized that resveratrol stimulates NO production by thick ascending limbs via a Ca2+/calmodulin-dependent mechanism. To test this, the effect of resveratrol on NO bioavailability was measured in thick ascending limb suspensions. Cai was measured in single perfused thick ascending limbs. SIRT1 activity and expression were measured in thick ascending limb lysates. Resveratrol (100 µM) increased NO bioavailability in thick ascending limb suspensions by 1.3±0.2 AFU/mg/min (pthick ascending limbs via a Ca2+/calmodulin dependent mechanism, and SIRT1 and AMPK do not participate. Resveratrol-stimulated NO production in thick ascending limbs may account for part of its beneficial effects.

Reliability of high mobility SiGe channel MOSFETs for future CMOS applications

CERN Document Server

Franco, Jacopo; Groeseneken, Guido

2014-01-01

Due to the ever increasing electric fields in scaled CMOS devices, reliability is becoming a showstopper for further scaled technology nodes. Although several groups have already demonstrated functional Si channel devices with aggressively scaled Equivalent Oxide Thickness (EOT) down to 5Å, a 10 year reliable device operation cannot be guaranteed anymore due to severe Negative Bias Temperature Instability. This book focuses on the reliability of the novel (Si)Ge channel quantum well pMOSFET technology. This technology is being considered for possible implementation in next CMOS technology nodes, thanks to its benefit in terms of carrier mobility and device threshold voltage tuning. We observe that it also opens a degree of freedom for device reliability optimization. By properly tuning the device gate stack, sufficiently reliable ultra-thin EOT devices with a 10 years lifetime at operating conditions are demonstrated. The extensive experimental datasets collected on a variety of processed 300mm wafers and pr...

doped ZnO thick film resistors

Indian Academy of Sciences (India)

The characterization and ethanol gas sensing properties of pure and doped ZnO thick films were investigated. Thick films of pure zinc oxide were prepared by the screen printing technique. Pure zinc oxide was almost insensitive to ethanol. Thick films of Al2O3 (1 wt%) doped ZnO were observed to be highly sensitive to ...

Effects of Zinc Injection on the Cladding Oxide Thickness in the Domestic Nuclear Power Plant

International Nuclear Information System (INIS)

Yoon, Hak Kyu; Kim, Hong Jin; Shin, Jung Cheol

2013-01-01

The first commercial plant for zinc injection demonstration was Farley-2 in 1994, and the effect of zinc injection was successfully demonstrated. Since then the PWR with zinc injection has been increased, there are about 80 PWR with zinc injection in the world in 2012. Zinc injection at the high duty plant has potential risk of increasing the cladding oxide thickness. Zinc injection doesn't affect the cladding corrosion directly but it may negatively affect crud deposit in the subcooled boiling region of the fuel. So the effect of zinc injection on fuel integrity has been evaluated. For low duty plant it is confirmed that zinc injection doesn't affect the fuel integrity. For high duty plant Callaway in U. S. and Vandellos II in Spain were successfully demonstrated but the experience with zinc injection of high duty plant was still lacking. Thus EPRI recommend the fuel surveillance programs for the high duty plant to apply zinc. The High Duty Core Index (HDCI) of most domestic nuclear power plant is above 150 Btu/ft 2 -gal- .deg. F. Those plants with a HDCI of 150 Btu/ft 2 -gal- .deg. F or greater may be considered as 'high duty'. As aforementioned, the experience with zinc injection of high duty plant was lacking. Thus to apply zinc injection in domestic plant with high duty, prudent approach is needed. In this study the effect of zinc injection in Hanul unit 1 with a HDCI of around 150 Btu/ft 2 -gal- .deg. F was evaluated. And in the next study the effect of zinc injection in the plant of HDCI of around 200 Btu/ft 2 -gal- .deg. F will be evaluated. Zinc injection had not caused any increase in oxide thickness in Hanul unit 1. Most of the oxide thickness measurement data with zinc injection are well within the non-zinc injection database. And the computer code which was developed based on non-zinc injection database well predicts oxide thickness for fuel rod with zinc injection. Thus, it can be concluded that zinc injection doesn't accelerate clad corrosion. Based

Improvement of the effective work function and transmittance of thick indium tin oxide/ultrathin ruthenium doped indium oxide bilayers as transparent conductive oxide

International Nuclear Information System (INIS)

Taweesup, Kattareeya; Yamamoto, Ippei; Chikyow, Toyohiro; Lothongkum, Gobboon; Tsukagoshi, Kazutoshi; Ohishi, Tomoji; Tungasmita, Sukkaneste; Visuttipitukul, Patama; Ito, Kazuhiro; Takahashi, Makoto; Nabatame, Toshihide

2016-01-01

Ruthenium doped indium oxide (In_1_−_xRu_xO_y) films fabricated using DC magnetron co-sputtering with In_2O_3 and Ru targets were investigated for use as transparent conductive oxides. The In_1_−_xRu_xO_y films had an amorphous structure in the wide compositional range of x = 0.3–0.8 and had an extremely smooth surface. The transmittance and resistivity of the In_1_−_xRu_xO_y films increased as the Ru content increased. The transmittance of the In_0_._3_8Ru_0_._6_2O_y film improved to over 80% when the film thickness was less than 5 nm, while the specific resistivity (ρ) was kept to a low value of 1.6 × 10"−"4 Ω cm. Based on these experimental data, we demonstrated that thick indium tin oxide (In_0_._9Sn_0_._1O_y, ITO) (150 nm)/ultrathin In_0_._3_8Ru_0_._6_2O_y (3 nm) bilayers have a high effective work function of 5.3 eV, transmittance of 86%, and low ρ of 9.2 × 10"−"5 Ω cm. This ITO/In_0_._3_8Ru_0_._6_2O_y bilayer is a candidate for use as an anode for organic electroluminescent devices. - Highlights: • We investigated characteristics of thick ITO/ultrathin Ru doped In_2O_3 bilayers. • Effect of Ru addition in In_2O_3 results in smooth surface because of an amorphous structure. • The In_0_._3_8Ru_0_._6_2O_y film with less than 5 nm improves to high transmittance over 80%. • ITO/In_0_._3_8Ru_0_._6_2O_y bilayer has a high effective work function of 5.3 eV. • We conclude that ITO/ultrathin In_0_._3_8Ru_0_._6_2O_y bilayer is a candidate as an anode of OEL.

The magnetic characteristics of perpendicular magnetic tunnel junction with MgO and Al-O oxidation layers in various thickness

International Nuclear Information System (INIS)

Chen, T.-J.; Canizo-Cabrera, A.; Chang, C.-H.; Liao, K.-A.; Li, Simon C.; Hou, C.-K.; Wu Teho

2006-01-01

In this work we show the magnetic characteristics of perpendicular magnetic tunnel junction (pMTJ) with different oxidation layers. The pMTJs structures were made by RF and DC magnetron sputtering. Individual depositions of magnesium oxide layers and of aluminum oxide films were prepared by plasma oxidation. The experimental results showed that the initial switching field was decreased as the magnesium oxide thickness was increased. Further work of the aluminum oxide surface roughness and hysteresis loop influenced by different oxidation layers on pMTJs structures will be discussed as well

Effect of thermal processing on silver thin films of varying thickness deposited on zinc oxide and indium tin oxide

International Nuclear Information System (INIS)

Sivaramakrishnan, K.; Ngo, A. T.; Alford, T. L.; Iyer, S.

2009-01-01

Silver films of varying thicknesses (25, 45, and 60 nm) were deposited on indium tin oxide (ITO) on silicon and zinc oxide (ZnO) on silicon. The films were annealed in vacuum for 1 h at different temperatures (300-650 deg. C). Four-point-probe measurements were used to determine the resistivity of the films. All films showed an abrupt change in resistivity beyond an onset temperature that varied with thickness. Rutherford backscattering spectrometry measurements revealed agglomeration of the Ag films upon annealing as being responsible for the resistivity change. X-ray pole figure analysis determined that the annealed films took on a preferential texturing; however, the degree of texturing was significantly higher in Ag/ZnO/Si than in Ag/ITO/Si samples. This observation was accounted for by interface energy minimization. Atomic force microscopy (AFM) measurements revealed an increasing surface roughness of the annealed films with temperature. The resistivity behavior was explained by the counterbalancing effects of increasing crystallinity and surface roughness. Average surface roughness obtained from the AFM measurements were also used to model the agglomeration of Ag based on Ostwald ripening theory

Characterization of 10 μm thick porous silicon dioxide obtained by complex oxidation process for RF application

International Nuclear Information System (INIS)

Park, Jeong-Yong; Lee, Jong-Hyun

2003-01-01

This paper proposes a 10 μm thick oxide layer structure, which can be used as a substrate for RF circuits. The structure has been fabricated by anodic reaction and complex oxidation, which is a combined process of low temperature thermal oxidation (500 deg. C, for 1 h at H 2 O/O 2 ) and a rapid thermal oxidation (RTO) process (1050 deg. C, for 1 min). The electrical characteristics of oxidized porous silicon layer (OPSL) were almost the same as those of standard thermal silicon dioxide. The leakage current through the OPSL of 10 μm was about 100-500 pA in the range of 0-50 V. The average value of breakdown field was about 3.9 MV cm -1 . From the X-ray photo-electron spectroscopy (XPS) analysis, surface and internal oxide films of OPSL, prepared by complex process were confirmed to be completely oxidized and also the role of RTO process was important for the densification of porous silicon layer (PSL) oxidized at a lower temperature. For the RF-test of Si substrate with thick silicon dioxide layer, we have fabricated high performance passive devices such as coplanar waveguide (CPW) on OPSL substrate. The insertion loss of CPW on OPSL prepared by complex oxidation process was -0.39 dB at 4 GHz and similar to that of CPW on OPSL prepared by a temperature of 1050 deg. C (1 h at H 2 O/O 2 ). Also the return loss of CPW on OPSL prepared by complex oxidation process was -23 dB at 10 GHz, which is similar to that of CPW on OPSL prepared by high temperature

A theoretical analysis of the response of an air-cored eddy current coil for remote oxide thickness measurements on reactor components

International Nuclear Information System (INIS)

Wilson, R.

1979-10-01

It is shown how the impedance of an air-cored eddy current coil in close proximity to an oxidised steel component may be calculated. Representative values were selected for the oxide thickness, lift off, operating frequency, conductivities and permeabilities of the oxide coating and steel base. The values of these parameters in the calculations were allowed to vary between suitable limits to quantify the effect of each one on coil impedance. The results of the calculations are used to determine the most suitable conditions for the measurement of oxide thickness on steel components using an air-cored eddy current probe. (author)

Room temperature synthesis of indium tin oxide nanotubes with high precision wall thickness by electroless deposition

Directory of Open Access Journals (Sweden)

Mario Boehme

2011-02-01

Full Text Available Conductive nanotubes consisting of indium tin oxide (ITO were fabricated by electroless deposition using ion track etched polycarbonate templates. To produce nanotubes (NTs with thin walls and small surface roughness, the tubes were generated by a multi-step procedure under aqueous conditions. The approach reported below yields open end nanotubes with well defined outer diameter and wall thickness. In the past, zinc oxide films were mostly preferred and were synthesized using electroless deposition based on aqueous solutions. All these methods previously developed, are not adaptable in the case of ITO nanotubes, even with modifications. In the present work, therefore, we investigated the necessary conditions for the growth of ITO-NTs to achieve a wall thickness of around 10 nm. In addition, the effects of pH and reductive concentrations for the formation of ITO-NTs are also discussed.

Dependence of the optical constants and the performance in the SPREE gas measurement on the thickness of doped tin oxide over coatings

Science.gov (United States)

Fischer, D.; Hertwig, A.; Beck, U.; Negendank, D.; Lohse, V.; Kormunda, M.; Esser, N.

2017-11-01

In this study, thickness related changes of the optical properties of doped tin oxide were studied. Two different sets of samples were prepared. The first set was doped with iron or nickel on silicon substrate with thicknesses of 29-56 nm, the second was iron doped on gold/glass substrate with 1.6-6.3 nm. The optical constants were determined by using spectral ellipsometry (SE) followed by modelling of the dielectric function with an oscillator model using Gaussian peaks. The analysis of the optical constants shows a dependence of the refraction and the absorption on the thickness of the doped tin oxide coating. In addition to the tin oxide absorption in the UV, one additional absorption peak was found in the near-IR/red which is related to plasmonic effects due to the doping. This peak shifts from the near-IR to the red part of the visible spectrum and becomes stronger by reducing the thickness, probably due to the formation of metal nanoparticles in this layer. These results were found for two different sets of samples by using the same optical model. Afterwards the second sample set was tested in the Surface Plasmon Resonance Enhanced Ellipsometric (SPREE) gas measurement with CO gas. It was found that the thickness has significant influence on the sensitivity and thus the adsorption of the CO gas. By increasing the thickness from 1.6 nm to 5.1 nm, the sensing ability is enhanced due to a higher coverage of the surface with the over coating. This is explained by the high affinity of CO molecules to the incorporated Fe-nanoparticles in the tin oxide coating. By increasing the thickness further to 6.3 nm, the sensing ability drops because the layer disturbs the SPR sensing effect too much.

Effects of Zinc Injection on the Cladding Oxide Thickness in the Domestic Nuclear Power Plant

Energy Technology Data Exchange (ETDEWEB)

Yoon, Hak Kyu; Kim, Hong Jin; Shin, Jung Cheol [KEPCO Nuclear Fuel Co. Ltd., Daejeon (Korea, Republic of)

2013-10-15

The first commercial plant for zinc injection demonstration was Farley-2 in 1994, and the effect of zinc injection was successfully demonstrated. Since then the PWR with zinc injection has been increased, there are about 80 PWR with zinc injection in the world in 2012. Zinc injection at the high duty plant has potential risk of increasing the cladding oxide thickness. Zinc injection doesn't affect the cladding corrosion directly but it may negatively affect crud deposit in the subcooled boiling region of the fuel. So the effect of zinc injection on fuel integrity has been evaluated. For low duty plant it is confirmed that zinc injection doesn't affect the fuel integrity. For high duty plant Callaway in U. S. and Vandellos II in Spain were successfully demonstrated but the experience with zinc injection of high duty plant was still lacking. Thus EPRI recommend the fuel surveillance programs for the high duty plant to apply zinc. The High Duty Core Index (HDCI) of most domestic nuclear power plant is above 150 Btu/ft{sup 2}-gal- .deg. F. Those plants with a HDCI of 150 Btu/ft{sup 2}-gal- .deg. F or greater may be considered as 'high duty'. As aforementioned, the experience with zinc injection of high duty plant was lacking. Thus to apply zinc injection in domestic plant with high duty, prudent approach is needed. In this study the effect of zinc injection in Hanul unit 1 with a HDCI of around 150 Btu/ft{sup 2}-gal- .deg. F was evaluated. And in the next study the effect of zinc injection in the plant of HDCI of around 200 Btu/ft{sup 2}-gal- .deg. F will be evaluated. Zinc injection had not caused any increase in oxide thickness in Hanul unit 1. Most of the oxide thickness measurement data with zinc injection are well within the non-zinc injection database. And the computer code which was developed based on non-zinc injection database well predicts oxide thickness for fuel rod with zinc injection. Thus, it can be concluded that zinc injection doesn

Adhesion-enhanced thick copper film deposition on aluminum oxide by an ion-beam-mixed Al seed layer

International Nuclear Information System (INIS)

Kim, Hyung-Jin; Park, Jae-Won

2012-01-01

We report a highly-adherent 30-μm Cu conductive-path coating on an aluminum-oxide layer anodized on an aluminum-alloy substrate for a metal-printed circuit-board application. A 50-nm Al layer was first coated with an e-beam evaporative deposition method on the anodized oxide, followed by ion bombardment to mix the interfacial region. Subsequently, a Cu coating was deposited onto the mixed seed layer to the designed thickness. Adhesions of the interface were tested by using tape adhesion test, and pull-off tests and showed commercially acceptable adhesions for such thick coating layers. The ion beam mixing (IBM) plays the role of fastening the thin seed coating layer to the substrate and enhancing the adhesion of the Cu conductive path on the anodized aluminum surface.

Controlling the Performance of P-type Cu2O/SnO Bilayer Thin-Film Transistors by Adjusting the Thickness of the Copper Oxide Layer

KAUST Repository

Al-Jawhari, Hala A.

2014-11-11

The effect of copper oxide layer thickness on the performance of Cu2O/SnO bilayer thin-film transistors was investigated. By using sputtered Cu2O films produced at an oxygen partial pressure, Opp, of 10% as the upper layer and 3% Opp SnO films as the lower layer we built a matrix of bottom-gate Cu2O/SnO bilayer thin-film transistors of different thickness. We found that the thickness of the Cu2O layer is of major importance in oxidation of the SnO layer underneath. The thicker the Cu2O layer, the more the underlying SnO layer is oxidized, and, hence, the more transistor mobility is enhanced at a specific temperature. Both device performance and the annealing temperature required could be adjusted by controlling the thickness of each layer of Cu2O/SnO bilayer thin-film transistors.

Estimation of residual life of boiler tubes using steamside oxide scale thickness

International Nuclear Information System (INIS)

Vikrant, K.S.N.; Ramareddy, G.V.; Pavan, A.H.V.; Singh, Kulvir

2013-01-01

In thermal power plants, remaining-life-estimation of boiler tubes is required at regular intervals for a safer and a better functionality of boilers. In this paper, a new method is proposed for the residual life estimation of service exposed boiler tubes using Non-Destructive Ultrasonic Oxide scale thickness measurements, average metal temperature and creep master curve. While steady state conduction heat transfer equations are solved to calculate the average metal temperature, creep master curve is generated from short term stress rupture data of rupture life less than 5000 h on a virgin material. In the present study, the residual life of T22 (2.25Cr-1Mo) service exposed Platen Superheater tube is estimated using two master creep curves, i.e. Larson-Miller Parametric (LMP) method of standard ASME T22 creep data and Wilshire approach of short term stress rupture data of T22. As the residual life is calculated from fundamental conduction heat transfer theory and creep rupture data, the proposed method can be applied for different grades of boiler materials. -- Highlights: ► Residual life is calculated from non-destructive oxide scale thickness, creep master curve and average metal temperature. ► A new method is proposed for calculating residual life using above parameters and from conduction heat transfer principles. ► The method can be applied to different boiler grades for estimating residual life and hence the method is generic

Thickness effects of yttria-doped ceria interlayers on solid oxide fuel cells

Science.gov (United States)

Fan, Zeng; An, Jihwan; Iancu, Andrei; Prinz, Fritz B.

2012-11-01

Determining the optimal thickness range of the interlayed yttria-doped ceria (YDC) films promises to further enhance the performance of solid oxide fuel cells (SOFCs) at low operating temperatures. The YDC interlayers are fabricated by the atomic layer deposition (ALD) method with one super cycle of the YDC deposition consisting of 6 ceria deposition cycles and one yttria deposition cycle. YDC films of various numbers of ALD super cycles, ranging from 2 to 35, are interlayered into bulk fuel cells with a 200 um thick yttria-stabilized zirconia (YSZ) electrolyte. Measurements and analysis of the linear sweep voltammetry of these fuel cells reveal that the performance of the given cells is maximized at 10 super cycles. Auger elemental mapping and X-ray photoelectron spectroscopy (XPS) techniques are employed to determine the film completeness, and they verify 10 super cycles of YDC to be the critical thickness point. This optimal YDC interlayer condition (6Ce1Y × 10 super cycles) is applied to the case of micro fuel cells as well, and the average performance enhancement factor is 1.4 at operating temperatures of 400 and 450 °C. A power density of 1.04 W cm-2 at 500 °C is also achieved with the optimal YDC recipe.

Chemical Vapor Identification by Plasma Treated Thick Film Tin Oxide Gas Sensor Array and Pattern Recognition

Directory of Open Access Journals (Sweden)

J. K. Srivastava

2011-02-01

Full Text Available Present study deals the class recognition potential of a four element plasma treated thick film tin oxide gas sensor array exposed with volatile organic compounds (VOCs. Methanol, Ethanol and Acetone are selected as target VOCs and exposed on sensor array at different concentration in range from 100-1000 ppm. Sensor array consist of four tin oxide sensors doped with 1-4 % PbO concentrations were fabricated by thick film technology and then treated with oxygen plasma for 5-10 minute durations. Sensor signal is analyzed by principal component analysis (PCA for visual classification of VOCs. Further output of PCA is used as input for classification of VOCs by four pattern classification techniques as: linear discriminant analysis (LDA, k-nearest neighbor (KNN, back propagation neural network (BPNN and support vector machine (SVM. All the four classifier results 100 % correct classification rate of VOCs by response analysis of sensor array treated with plasma for 5 minute.

Colloidal titania-silica-iron oxide nanocomposites and the effect from silica thickness on the photocatalytic and bactericidal activities

Energy Technology Data Exchange (ETDEWEB)

Chanhom, Padtaraporn [Department of Chemistry, Faculty of Science, Chulalongkorn University, Bangkok 10330 (Thailand); Charoenlap, Nisanart [Laboratory of Biotechnology, Chulabhorn Research Institute, Bangkok 10210 (Thailand); Tomapatanaget, Boosayarat [Department of Chemistry, Faculty of Science, Chulalongkorn University, Bangkok 10330 (Thailand); Insin, Numpon, E-mail: Numpon.I@chula.ac.th [Department of Chemistry, Faculty of Science, Chulalongkorn University, Bangkok 10330 (Thailand)

2017-04-01

New types of colloidal multifunctional nanocomposites that combine superparamagnetic character and high photocatalytic activity were synthesized and investigated. The superparamagnetic nanocomposites composed of anatase titania, silica, and iron oxide nanoparticles (TSI) were synthesized using thermal decomposition method followed by microemulsion method, without calcination at high temperature. Different techniques including X-ray diffraction (XRD) and transmission electron microscope (TEM) were used to characterize and confirm the structure of the nanocomposites. These nanocomposites showed high photocatalytic activity when used in the photodegradation of methylene blue under irradiation with a black light lamp. Moreover, the nanocomposites exhibited high antibacterial properties. From our study, the nanocomposites can be useful in various applications such as removal of pollutants with readily separation from the environment using an external magnetic field. These composites could effectively photo-degrade the dye at least three cycles without regeneration. The effects of silica shell thickness on the photocatalytic activity was investigated, and the thickness of 6 nm of the silica interlayer is enough for the inhibition of electron translocation between titania and iron oxide nanoparticles and maintaining the efficiency of photocatalytic activity of titania nanoparticles. - Highlights: • New colloidal nanocomposites of iron oxide-silica-titania were prepared. • The nanocomposites exhibited high photocatalytic activity with magnetic response. • The effects of silica thickness on photocatalytic activity were investigated. • Bactericidal activity of the nanocomposites was demonstrated.

Electrical characteristics of AlO sub x N sub y prepared by oxidation of sub-10-nm-thick AlN films for MOS gate dielectric applications

CERN Document Server

Jeon, S H; Kim, H S; Noh, D Y; Hwang, H S

2000-01-01

In this research, the feasibility of ultrathin AlO sub x N sub y prepared by oxidation of sub 100-A-thick AlN thin films for metal-oxide-semiconductor (MOS) gate dielectric applications was investigated. Oxidation of 51-A-and 98-A-thick as-deposited AlN at 800 .deg. C was used to form 72-A-and 130-A-thick AlO sub x N sub y , respectively. Based on the capacitance-voltage (C-V) measurements of the MOS capacitor, the dielectric constants of 72 A-thick and 130 A-thick Al-oxynitride were 5.15 and 7, respectively. The leakage current of Al-oxynitride at low field was almost the same as that of thermal SiO sub 2. based on the CV data, the interface state density of Al-oxynitride was relatively higher than that of SiO sub 2. Although process optimization is still necessary, the Al-oxynitride exhibits some possibility for future MOS gate dielectric applications.

Electrical characteristics of AlO{sub x}N{sub y} prepared by oxidation of sub-10-nm-thick AlN films for MOS gate dielectric applications

Energy Technology Data Exchange (ETDEWEB)

Jeon, Sang Hun; Jang, Hyeon Woo; Kim, Hyun Soo; Noh, Do Young; Hwang, Hyun Sang [Kwangju Institute of Science and Technology, Kwangju (Korea, Republic of)

2000-12-01

In this research, the feasibility of ultrathin AlO{sub x}N{sub y} prepared by oxidation of sub 100-A-thick AlN thin films for metal-oxide-semiconductor (MOS) gate dielectric applications was investigated. Oxidation of 51-A-and 98-A-thick as-deposited AlN at 800 .deg. C was used to form 72-A-and 130-A-thick AlO{sub x}N{sub y}, respectively. Based on the capacitance-voltage (C-V) measurements of the MOS capacitor, the dielectric constants of 72 A-thick and 130 A-thick Al-oxynitride were 5.15 and 7, respectively. The leakage current of Al-oxynitride at low field was almost the same as that of thermal SiO{sub 2}. based on the CV data, the interface state density of Al-oxynitride was relatively higher than that of SiO{sub 2}. Although process optimization is still necessary, the Al-oxynitride exhibits some possibility for future MOS gate dielectric applications.

Formation of silicon Oxide nano thickness on Si (III) with the assistance of Cs

International Nuclear Information System (INIS)

Bahari, A.; Bagheri, M.

2006-01-01

: The possibility of controlling the growth of a uniform ultra thin oxide on silicon via oxygen dosing at low temperatures, would be a great interest for the projected further development of nano electronics. One way to achieve this is to be able to control the conversion of chemically adsorbed oxygen and retained at room temperature into oxide during subsequent heating. Oxygen is chemisorbed at room temperature on Si(111) surface to saturation ( >100 L O 2 ), and the experimental chamber is then evacuated. This leaves adsorbed oxygen as atomically inserted on Si surface which sits on the back bonds. This surface is then used as a base for further processing which in one case consists of annealing to 600- 700 d eg C and subsequent exposures equivalent to the first step. This is repeated again. As the focus of this work, a series of experiments are done with adsorbed Cs, which assists in retaining oxygen and in transforming the adsorbed oxygen into oxide upon heating. It was found that the oxide formed on the surface at low coverage clusters. Without any external influence, the clusters may be made to coalesce upon further oxygen adsorption at room temperature, and annealing terminates as a continuous monolayer of amorphous oxide on top of a well-ordered silicon substrate. This configuration is inert to further uptake of oxygen. A higher oxide thickness could be obtained with Cs. Also in this case, the oxide growth saturates in an inert oxide Iayer

Effect of coating thickness of iron oxide nanoparticles on their relaxivity in the MRI

Directory of Open Access Journals (Sweden)

Farzaneh Hajesmaeelzadeh

2016-02-01

Full Text Available Objective(s:Iron oxide nanoparticles have found prevalent applications in various fields including drug delivery, cell separation and as contrast agents. Super paramagnetic iron oxide (SPIO nanoparticles allow researchers and clinicians to enhance the tissue contrast of an area of interest by increasing the relaxation rate of water. In this study, we evaluate the dependency of hydrodynamic size of iron oxide nanoparticles coated with Polyethylene  glycol (PEG on their relativities with 3 Tesla clinical MRI. Materials and Methods: We used three groups of nanoparticles with nominal sizes 20, 50 and 100 nm with a core size of 8.86 nm, 8.69 nm and 10.4 nm that they were covered with PEG 300 and 600 Da. A clinical magnetic resonance scanner determines the T1 and T2 relaxation times for various concentrations of PEG-coated nanoparticles. Results: The size measurement by photon correlation spectroscopy showed the hydrodynamic sizes of MNPs with nominal 20, 50 and 100 nm with 70, 82 and 116 nm for particles with PEG 600 coating and 74, 93 and 100 nm for  particles with PEG 300 coating, respectively. We foud that the relaxivity decreased with increasing overall particle size (via coating thickness. Magnetic resonance imaging showed that by increasing the size of the nanoparticles, r2/r1 increases linearly. Conclusion: According to the data obtained from this study it can be concluded that increments in coating thickness have more influence on relaxivities compared to the changes in core size of magnetic nanoparticles.

Influence of thickness and coatings morphology in the antimicrobial performance of zinc oxide coatings

Energy Technology Data Exchange (ETDEWEB)

Carvalho, P. [Department of Physics, University of Minho, Campus de Azurém, 4800-058 Guimaraes (Portugal); Sampaio, P. [CBMA, University of Minho, Campus de Gualtar, 4700 Braga (Portugal); Azevedo, S. [Department of Physics, University of Minho, Campus de Azurém, 4800-058 Guimaraes (Portugal); Vaz, C. [CBMA, University of Minho, Campus de Gualtar, 4700 Braga (Portugal); Espinós, J.P. [Instituto de Ciencia de Materiales de Sevilla, CSIC-University of Sevilla, Avda. Américo Vespucio 49, 41092 Sevilla (Spain); Teixeira, V., E-mail: vasco@fisica.uminho.pt [Department of Physics, University of Minho, Campus de Azurém, 4800-058 Guimaraes (Portugal); Carneiro, J.O., E-mail: carneiro@fisica.uminho.pt [Department of Physics, University of Minho, Campus de Azurém, 4800-058 Guimaraes (Portugal)

2014-07-01

In this research work, the production of undoped and silver (Ag) doped zinc oxide (ZnO) thin films for food-packaging applications were developed. The main goal was to determine the influence of coatings morphology and thickness on the antimicrobial performance of the produced samples. The ZnO based thin films were deposited on PET (Polyethylene terephthalate) substrates by means of DC reactive magnetron sputtering. The thin films were characterized by optical spectroscopy, X-Ray Diffraction (XRD), X-ray photoelectron spectroscopy (XPS) and Scanning Electron Microscopy (SEM). The antimicrobial performance of the undoped and Ag-doped ZnO thin films was also evaluated. The results attained have shown that all the deposited zinc oxide and Ag-doped ZnO coatings present columnar morphology with V-shaped columns. The increase of ZnO coatings thickness until 200 nm increases the active surface area of the columns. The thinner samples (50 and 100 nm) present a less pronounced antibacterial activity than the thickest ones (200–600 nm). Regarding Ag-doped ZnO thin films, it was verified that increasing the silver content decreases the growth rate of Escherichia coli and decreases the amount of bacteria cells present at the end of the experiment.

Preperitoneal Fat Thicknesses, Lipid Profile, and Oxidative Status in Women With Uterine Fibroids.

Science.gov (United States)

Vignini, Arianna; Sabbatinelli, Jacopo; Clemente, Nicolò; Delli Carpini, Giovanni; Tassetti, Marta; Zagaglia, Giulia; Ciavattini, Andrea

2017-10-01

There is growing evidence supporting a possible role for metabolic syndrome and its determinants, such as dyslipidemia, in uterine fibroid (UF) pathogenesis. The present study aims to investigate the association between UFs and visceral and subcutaneous fat thickness (SFT), lipid profile, and oxidative and antioxidative status. In this cross-sectional study, 35 patients diagnosed with UFs and 15 women without UFs were enrolled. Clinical history and anthropometric parameters were collected for every woman. Characteristics of UFs, preperitoneal fat thickness (PFT), and SFT were assessed ultrasonically. Lipid profile, glucose, thiobarbituric acid reactive substances (TBARs), and superoxide dismutase (SOD) activity were evaluated on plasma from participants. Women with UFs showed a significantly increased PFT (11.63 ± 3.39 vs 7.01 ± 3.10 mm; P HDL-C; 45.4 ± 8.3 vs 57.2 ± 13.4 mg/dL; P = .017), higher levels of low-density lipoprotein cholesterol (LDL-C; 92.3 ± 21.5 vs 72.0 ± 14.6 mg/dL; P = .007), and oxidized LDL (65.2 ± 20.7 vs 43.0 ± 11.3 U/L; P = .002). In patients, TBARs concentration was significantly higher (9.41 ± 6.49 vs 2.92 ± 1.65 nmol malondialdehyde/100 μg prot; P body mass index, oxidized LDL, and TBARs. At multivariate analysis, PFT and HDL-C maintained a significant correlation with the diagnosis of UFs. Chronic inflammation triggered and sustained by visceral fat could play a determinant role in cell differentiation and proliferation processes, necessary for the development of UFs. Alterations in cholesterol fractions may be explained as a consequence of the increased visceral fat deposits and can reflect an increased risk of subclinical atherosclerosis in patients with UF.

Ion Diffusion-Directed Assembly Approach to Ultrafast Coating of Graphene Oxide Thick Multilayers.

Science.gov (United States)

Zhao, Xiaoli; Gao, Weiwei; Yao, Weiquan; Jiang, Yanqiu; Xu, Zhen; Gao, Chao

2017-10-24

The layer-by-layer (LbL) assembly approach has been widely used to fabricate multilayer coatings on substrates with multiple cycles, whereas it is hard to access thick films efficiently. Here, we developed an ion diffusion-directed assembly (IDDA) strategy to rapidly make multilayer thick coatings in one step on arbitrary substrates. To achieve multifunctional coatings, graphene oxide (GO) and metallic ions were selected as the typical building blocks and diffusion director in IDDA, respectively. With diffusion of metallic ions from substrate to negatively charged GO dispersion spontaneously (i.e., from high-concentration region to low-concentration region), GO was assembled onto the substrate sheet-by-sheet via sol-gel transformation. Because metallic ions with size of subnanometers can diffuse directionally and freely in the aqueous dispersion, GO was coated on the substrate efficiently, giving rise to films with desired thickness up to 10 μm per cycle. The IDDA approach shows three main merits: (1) high efficiency with a μm-scale coating rate; (2) controllability over thickness and evenness; and (3) generality for substrates of plastics, metals and ceramics with any shapes and morphologies. With these merits, IDDA strategy was utilized in the efficient fabrication of functional graphene coatings that exhibit outstanding performance as supercapacitors, electromagnetic interference shielding textiles, and anticorrosion coatings. This IDDA approach can be extended to other building blocks including polymers and colloidal nanoparticles, promising for the scalable production and application of multifunctional coatings.

on THICKNESS OF COPPER (|) OXIDE

African Journals Online (AJOL)

2006-12-20

Dec 20, 2006 ... known materials to be used as semiconductor devices. The oxide is. Observed to be an attractive starting material for the production of solar cells for low cost terrestrial conversion of solar energy to electricity. Copper (I) oxide is one Of the earliest known photovoltaic materials and the first in which the ...

A novel locus in the oxidative stress-related gene ALOX12 moderates the association between PTSD and thickness of the prefrontal cortex.

Science.gov (United States)

Miller, Mark W; Wolf, Erika J; Sadeh, Naomi; Logue, Mark; Spielberg, Jeffrey M; Hayes, Jasmeet P; Sperbeck, Emily; Schichman, Steven A; Stone, Angie; Carter, Weleetka C; Humphries, Donald E; Milberg, William; McGlinchey, Regina

2015-12-01

Oxidative stress has been implicated in many common age-related diseases and is hypothesized to play a role in posttraumatic stress disorder (PTSD)-related neurodegeneration (Miller and Sadeh, 2014). This study examined the influence of the oxidative stress-related genes ALOX 12 and ALOX 15 on the association between PTSD and cortical thickness. Factor analyses were used to identify and compare alternative models of the structure of cortical thickness in a sample of 218 veterans. The best-fitting model was then used for a genetic association analysis in White non-Hispanic participants (n=146) that examined relationships between 33 single nucleotide polymorphisms (SNPs) spanning the two genes, 8 cortical thickness factors, and each SNP×PTSD interaction. Results identified a novel ALOX12 locus (indicated by two SNPs in perfect linkage disequilibrium: rs1042357 and rs10852889) that moderated the association between PTSD and reduced thickness of the right prefrontal cortex. A whole-cortex vertex-wise analysis showed this effect to be localized to clusters spanning the rostral middle frontal gyrus, superior frontal gyrus, rostral anterior cingulate cortex, and medial orbitofrontal cortex. These findings illustrate a novel factor-analytic approach to neuroimaging-genetic analyses and provide new evidence for the possible involvement of oxidative stress in PTSD-related neurodegeneration. Published by Elsevier Ltd.

Determining the thickness of aliphatic alcohol monolayers covalently attached to silicon oxide surfaces using angle-resolved X-ray photoelectron spectroscopy

Science.gov (United States)

Lee, Austin W. H.; Kim, Dongho; Gates, Byron D.

2018-04-01

The thickness of alcohol based monolayers on silicon oxide surfaces were investigated using angle-resolved X-ray photoelectron spectroscopy (ARXPS). Advantages of using alcohols as building blocks for the formation of monolayers include their widespread availability, ease of handling, and stability against side reactions. Recent progress in microwave assisted reactions demonstrated the ease of forming uniform monolayers with alcohol based reagents. The studies shown herein provide a detailed investigation of the thickness of monolayers prepared from a series of aliphatic alcohols of different chain lengths. Monolayers of 1-butanol, 1-hexanol, 1-octanol, 1-decanol, and 1-dodecanol were each successfully formed through microwave assisted reactions and characterized by ARXPS techniques. The thickness of these monolayers consistently increased by ∼1.0 Å for every additional methylene (CH2) within the hydrocarbon chain of the reagents. Tilt angles of the molecules covalently attached to silicon oxide surfaces were estimated to be ∼35° for each type of reagent. These results were consistent with the observations reported for thiol based or silane based monolayers on either gold or silicon oxide surfaces, respectively. The results of this study also suggest that the alcohol based monolayers are uniform at a molecular level.

Nano-thick calcium oxide armed titanium: boosts bone cells against methicillin-resistant Staphylococcus aureus.

Science.gov (United States)

Cao, Huiliang; Qin, Hui; Zhao, Yaochao; Jin, Guodong; Lu, Tao; Meng, Fanhao; Zhang, Xianlong; Liu, Xuanyong

2016-02-22

Since the use of systemic antibiotics for preventing acute biomaterial-associated infections (BAIs) may build up bacterial resistance and result in huge medical costs and unpredictable mortality, new precaution strategies are required. Here, it demonstrated that titanium armed with a nano-thick calcium oxide layer was effective on averting methicillin-resistant Staphylococcus aureus (MRSA) infections in rabbits. The calcium oxide layer was constructed by, firstly, injecting of metallic calcium into titanium via a plasma immersion ion implantation process, and then transforming the outer most surface into oxide by exposing to the atmosphere. Although the calcium oxide armed titanium had a relative low reduction rate (~74%) in growth of MRSA in vitro, it could markedly promote the osteogenic differentiation of bone marrow stem cells (BMSCs), restore local bone integration against the challenge of MRSA, and decrease the incidence of MRSA infection with a rate of 100% (compared to the titanium control). This study demonstrated for the first time that calcium, as one of the major elements in a human body, could be engineered to avert MRSA infections, which is promising as a safe precaution of disinfection for implantable biomedical devices.

Nano-thick calcium oxide armed titanium: boosts bone cells against methicillin-resistant Staphylococcus aureus

Science.gov (United States)

Cao, Huiliang; Qin, Hui; Zhao, Yaochao; Jin, Guodong; Lu, Tao; Meng, Fanhao; Zhang, Xianlong; Liu, Xuanyong

2016-02-01

Since the use of systemic antibiotics for preventing acute biomaterial-associated infections (BAIs) may build up bacterial resistance and result in huge medical costs and unpredictable mortality, new precaution strategies are required. Here, it demonstrated that titanium armed with a nano-thick calcium oxide layer was effective on averting methicillin-resistant Staphylococcus aureus (MRSA) infections in rabbits. The calcium oxide layer was constructed by, firstly, injecting of metallic calcium into titanium via a plasma immersion ion implantation process, and then transforming the outer most surface into oxide by exposing to the atmosphere. Although the calcium oxide armed titanium had a relative low reduction rate (~74%) in growth of MRSA in vitro, it could markedly promote the osteogenic differentiation of bone marrow stem cells (BMSCs), restore local bone integration against the challenge of MRSA, and decrease the incidence of MRSA infection with a rate of 100% (compared to the titanium control). This study demonstrated for the first time that calcium, as one of the major elements in a human body, could be engineered to avert MRSA infections, which is promising as a safe precaution of disinfection for implantable biomedical devices.

Effect of annealing and oxide layer thickness on doping profiles shape of ''through-oxide'' implanted P+ ions in textured silicon

International Nuclear Information System (INIS)

El-Dessouki, M.S.; Galloni, R.

1987-10-01

Phosphorous ions at energies of 60+100 KeV, and doses (4+5)x10 15 atom/cm 2 have been implanted randomly through SiO 2 layers into textured silicon crystals. The penetration profiles of the P + ions have been determined by means of differential sheet resistivity and Hall-effect, together with the anodic oxidation stripping technique. The effect of the oxide layer thickness, annealing temperature on the junction properties has been studied. The damage produced by implantation, has also been investigated using transmission electron microscope (TEM). From the mobility measurements of the free carriers as a function of depth through the junction, two minima have been observed in through oxide implanted samples. The one nearer to the Si-SiO 2 interface (at about 200A from the interface) was related to the damage produced by the recoil oxygen atoms from the oxide layer into silicon. The deeper minimum is lying at ∼ 0.2μm from the interface and was attributed to the damage produced by the implanted P + ions, which caused clusters and defect loops after annealing. This damage was observed through TEM photographs. The optimum conditions for producing shallow junction without losing much of the implanted P + ions through the oxide layer were estimated. (author). 22 refs, 7 figs, 1 tab

Enhanced dielectric properties of ZrO2 thin films prepared in nitrogen ambient by pulsed laser deposition

International Nuclear Information System (INIS)

Zhu, J; Li, T L; Pan, B; Zhou, L; Liu, Z G

2003-01-01

ZrO 2 thin films were fabricated in O 2 ambient and in N 2 ambient by pulsed laser deposition (PLD), respectively. X-ray diffraction revealed that films prepared at 400 deg. C remained amorphous. The dielectric properties of amorphous ZrO 2 films were investigated by measuring the capacitance-frequency characteristics of Pt/ZrO 2 /Pt capacitor structures. The dielectric constant of the films deposited in N 2 ambient was larger than that of the films deposited in O 2 ambient. The dielectric loss was lower for films prepared in N 2 ambient. Atom force microscopy investigation indicated that films deposited in N 2 ambient had smoother surface than films deposited in O 2 ambient. Capacitance-voltage and current-voltage characteristics were studied. The equivalent oxide thickness (EOT) of films with 6.6 nm physical thickness deposited in N 2 ambient is lower than that of films deposited in O 2 ambient. An EOT of 1.38 nm for the film deposited in N 2 ambient was obtained, while the leakage current density was 94.6 mA cm -2 . Therefore, ZrO 2 thins deposited in N 2 ambient have enhanced dielectric properties due to the incorporation of nitrogen which leads to the formation of Zr-doped nitride interfacial layer, and is suggested to be a potential material for alternative high-k (high dielectric constant) gate dielectric applications

Investigation of the fabrication parameters of thick film metal oxide-polymer pH electrodes

International Nuclear Information System (INIS)

Gac, Arnaud

2002-01-01

This thesis describes a study into the development of an optimum material and fabrication process for the production of thick film pH electrodes. These devices consist of low cost, miniature and rugged pH sensors formed by screen printing a metal oxide bearing paste onto a high temperature (∼850 deg C) fired metal back contact supported on a standard alumina substrate. The pH sensitive metal oxide layer must be fabricated at relatively low temperatures (<300 deg C) in order to maintain the pH sensitivity of the layer and hence requires the use of a suitably stable low temperature curing binder. Bespoke fabricated inks are derived from a Taguchi style factorial experimental plans in which, different binder types, curing temperatures, hydration level and percentage mixtures of different metal oxides and layer thicknesses were investigated. The pH responses of 18 printed electrodes per batch were assessed in buffer solutions with respect to a commercial reference electrode forming a complete potentiometric circuit. The evaluation criteria used in the study included the device-to-device variation in sensitivity of the pH sensors and their sensitivity variation as a function of time. The results indicated the importance of the choice of binder type in particular on the performance characteristics. Reproducible device-to-device variation in sensitivity was determined for the best inks found, whatever the ink fabrication batch. A reduction in the sensitivity variation with time has been determined using the mathematical models derived from an experimental plan. The lack of reproducibility of the sensitivity magnitude, regardless of the ink manufacturing batch, seems to be a recurrent problem with prototype inks. Experimental sub-Nernstian responses are discussed in the light of possible pH mechanisms. (author)

Alcohol vapor sensing by cadmium-doped zinc oxide thick films based chemical sensor

Science.gov (United States)

Zargar, R. A.; Arora, M.; Chackrabarti, S.; Ahmad, S.; Kumar, J.; Hafiz, A. K.

2016-04-01

Cadmium-doped zinc oxide nanoparticles were derived by simple chemical co-precipitation route using zinc acetate dihydrate and cadmium acetate dihydrate as precursor materials. The thick films were casted from chemical co-precipitation route prepared nanoparticles by economic facile screen printing method. The structural, morphological, optical and electrical properties of the film were characterized relevant to alcohol vapor sensing application by powder XRD, SEM, UV-VIS and DC conductivity techniques. The response and sensitivity of alcohol (ethanol) vapor sensor are obtained from the recovery curves at optimum working temperature range from 20∘C to 50∘C. The result shows that maximum sensitivity of the sensor is observed at 25∘C operating temperature. On varying alcohol vapor concentration, minor variation in resistance has been observed. The sensing mechanism of sensor has been described in terms of physical adsorption and chemical absorption of alcohol vapors on cadmium-doped zinc oxide film surface and inside film lattice network through weak hydrogen bonding, respectively.

Effect of Processing Parameters on Pore Structure and Thickness of Anodic Aluminum Oxide (AAO) Tubular Membranes

OpenAIRE

Belwalkar, A.; Grasing, E.; Van Geertruyden, W.; Huang, Z.; Misiolek, W.Z.

2008-01-01

Nanoporous anodic aluminum oxide (AAO) tubular membranes were fabricated from aluminum alloy tubes in sulfuric and oxalic acid electrolytes using a two-step anodization process. The membranes were investigated for characteristics such as pore size, interpore distance and thickness by varying applied voltage and electrolyte concentration. Morphology of the membranes was examined using light optical and scanning electron microscopy and characterized using ImageJ software. Results showed that me...

Role of the SiO2 buffer layer thickness in the formation of Si/SiO2/nc-Ge/SiO2 structures by dry oxidation

International Nuclear Information System (INIS)

Kling, A.; Ortiz, M.I.; Prieto, A.C.; Rodriguez, A.; Rodriguez, T.; Jimenez, J.; Ballesteros, C.; Soares, J.C.

2006-01-01

Nanomemories, containing Ge-nanoparticles in a SiO 2 matrix, can be produced by dry thermal oxidation of a SiGe layer deposited onto a Si-wafer with a barrier SiO 2 layer on its top. Rutherford backscattering spectrometry has been used to characterize the kinetics of the oxidation process, the composition profile of the growing oxide, the Ge-segregation and its diffusion into the barrier oxide in samples with thin and thick barrier oxide layers. The Ge segregated during the oxidation of the SiGe layer diffuses into the barrier oxide. In the first case the diffusion through the thin oxide is enhanced by the proximity of the substrate that acts as a sink for the Ge, resulting in the formation of a low Ge concentration SiGe layer in the surface of the Si-wafer. In the second case, the Ge-diffusion progresses as slowly as in bulk SiO 2 . Since barrier oxide layers as thin as possible are favoured for device fabrication, the structures should be oxidized at lower temperatures and the initial SiGe layer thickness reduced to minimize the Ge-diffusion

A thermally robust and thickness independent ferroelectric phase in laminated hafnium zirconium oxide

Directory of Open Access Journals (Sweden)

S. Riedel

2016-09-01

Full Text Available Ferroelectric properties in hafnium oxide based thin films have recovered the scaling potential for ferroelectric memories due to their ultra-thin-film- and CMOS-compatibility. However, the variety of physical phenomena connected to ferroelectricity allows a wider range of applications for these materials than ferroelectric memory. Especially mixed HfxZr1-xO2 thin films exhibit a broad compositional range of ferroelectric phase stability and provide the possibility to tailor material properties for multiple applications. Here it is shown that the limited thermal stability and thick-film capability of HfxZr1-xO2 can be overcome by a laminated approach using alumina interlayers.

Effect of Processing Parameters on Pore Structure and Thickness of Anodic Aluminum Oxide (AAO) Tubular Membranes

Science.gov (United States)

Belwalkar, A.; Grasing, E.; Huang, Z.; Misiolek, W.Z.

2008-01-01

Nanoporous anodic aluminum oxide (AAO) tubular membranes were fabricated from aluminum alloy tubes in sulfuric and oxalic acid electrolytes using a two-step anodization process. The membranes were investigated for characteristics such as pore size, interpore distance and thickness by varying applied voltage and electrolyte concentration. Morphology of the membranes was examined using light optical and scanning electron microscopy and characterized using ImageJ software. Results showed that membranes having narrow pore size and uniform pore distribution with parallel channel arrays were obtained. The pore sizes were ranging from 14 to 24 nm and the wall thicknesses as high as 76 µm. It was found that the pore size increased in direct proportion with the applied voltage and inversely with the electrolyte concentration while the interpore distance increased linearly with the applied voltage. It was also observed that increase in acid concentration increased tubular membrane wall thickness that improved mechanical handling. By using anodic alumina technology, robust ceramic tubes with uniformly distributed pore-structure and parallel nano-channels of lengths and sizes practical for industrial applications were reliably produced in quantity. PMID:19578471

Effect of Processing Parameters on Pore Structure and Thickness of Anodic Aluminum Oxide (AAO) Tubular Membranes.

Science.gov (United States)

Belwalkar, A; Grasing, E; Van Geertruyden, W; Huang, Z; Misiolek, W Z

2008-07-01

Nanoporous anodic aluminum oxide (AAO) tubular membranes were fabricated from aluminum alloy tubes in sulfuric and oxalic acid electrolytes using a two-step anodization process. The membranes were investigated for characteristics such as pore size, interpore distance and thickness by varying applied voltage and electrolyte concentration. Morphology of the membranes was examined using light optical and scanning electron microscopy and characterized using ImageJ software. Results showed that membranes having narrow pore size and uniform pore distribution with parallel channel arrays were obtained. The pore sizes were ranging from 14 to 24 nm and the wall thicknesses as high as 76 microm. It was found that the pore size increased in direct proportion with the applied voltage and inversely with the electrolyte concentration while the interpore distance increased linearly with the applied voltage. It was also observed that increase in acid concentration increased tubular membrane wall thickness that improved mechanical handling. By using anodic alumina technology, robust ceramic tubes with uniformly distributed pore-structure and parallel nano-channels of lengths and sizes practical for industrial applications were reliably produced in quantity.

Numerical modelling of the impedance plane for simultaneous determining, by eddy currents, the oxide thickness and conductivity in Zircaloy

International Nuclear Information System (INIS)

Lois, Alejandro E.

2001-01-01

During service at high temperature or in aggressive media, metallic structures and components may suffer different types of changes or degradation. As an example, phase transformations may occur, second phases may precipitate, and in consequence the mechanical and chemical properties of the material may change. Their behavior will therefore differ from that considered for the design of the component. The knowledge of the amount of a precipitated second phase in a component should be an important tool in the hands of the maintenance engineer. And it would be very important to obtain this knowledge nondestructively and reliably. The objective of this project is to evaluate by eddy currents the amount of the hydrogen incorporated during service in structural zirconium base materials. For this purpose, a series of Zircaloy-4 specimens with oxide layers of different thickness and different concentration of hydrogen obtained by controlled autoclave treatments were used. These specimens were tested with eddy current equipment. The information produced by an eddy current test is the superposition of many variables, e.g.: thickness of oxide layers, conductance, thickness of specimen, etc. In order to sort out this information, an analytical model of the impedance plane was programmed in a PC, with which this information was processed, permitting, in this way, to evaluate the conductivity of materials, taking into account the effect of oxide layers thickness. A linear relationship between the conductivity and the hydrogen content in the range of hydrogen concentrations of technological interest was observed. Therefore, the calculated electrical conductivity may be transformed to the amount of hydrogen content, using a suitable calibration curve. This process will allow for the nondestructive assessment of the amount of hydrogen in reactor components, such as pressure and calandria tubes, a knowledge which will enable the experts to predict the degree of fragility of those

Synchrotron X-ray irradiation effects on the device characteristics and the resistance to hot-carrier damage of MOSFETs with 4 nm thick gate oxides

International Nuclear Information System (INIS)

Tanaka, Yuusuke; Tanabe, Akira; Suzuki, Katsumi

1998-01-01

The effects of synchrotron x-ray irradiation on the device characteristics and hot-carrier resistance of n- and p-channel metal oxide semiconductor field effect transistors (MOSFETs) with 4 nm thick gate oxides are investigated. In p-channel MOSFETs, device characteristics were significantly affected by the x-ray irradiation but completely recovered after annealing, while the device characteristics in n-channel MOSFETs were not noticeably affected by the irradiation. This difference appears to be due to a difference in interface-state generation. In p-channel MOSFETs, defects caused by boron-ion penetration through the gate oxides may be sensitive to x-ray irradiation, causing the generation of many interface states. These interface states are completely eliminated after annealing in hydrogen gas. The effects of irradiation on the resistance to hot-carrier degradation in annealed 4 nm thick gate-oxide MOSFETs were negligible even at an x-ray dose of 6,000 mJ/cm 2

Prediction of overpotential and effective thickness of Ni/YSZ anode for solid oxide fuel cell by improved species territory adsorption model

Science.gov (United States)

Nagasawa, Tsuyoshi; Hanamura, Katsunori

2017-06-01

The reliability of analytical model for hydrogen oxidation at Ni/YSZ anode in solid oxide fuel cell named as species territory adsorption model has been improved by introducing referenced thermodynamic and kinetic parameters predicted by density function theory calculations. The model can explicitly predict anode overpotential using unknown values of quantities of state for oxygen migration process in YSZ near a triple phase boundary (TPB), frequency factor for hydrogen oxidation, and effective anode thickness. The former two are determined through careful fitting process between the predicted and experimental results of Ni/YSZ cermet and Ni-patterned anodes. This makes it possible to estimate effective anode thickness, which tends to increase with temperature in six kinds of Ni/YSZ anodes in references. In addition, the comparison between the proposed model and a published numerical simulation indicates that the model can predict more precise dependence of anode overpotential on steam partial pressure than that by Butler-Volmer equation with empirical exchange current density. The introduction of present model into numerical simulation instead of Butler-Volmer equation can give more accurate prediction of anode polarization.

Electrical Properties of Ultrathin Hf-Ti-O Higher k Gate Dielectric Films and Their Application in ETSOI MOSFET.

Science.gov (United States)

Xiong, Yuhua; Chen, Xiaoqiang; Wei, Feng; Du, Jun; Zhao, Hongbin; Tang, Zhaoyun; Tang, Bo; Wang, Wenwu; Yan, Jiang

2016-12-01

Ultrathin Hf-Ti-O higher k gate dielectric films (~2.55 nm) have been prepared by atomic layer deposition. Their electrical properties and application in ETSOI (fully depleted extremely thin SOI) PMOSFETs were studied. It is found that at the Ti concentration of Ti/(Ti + Hf) ~9.4%, low equivalent gate oxide thickness (EOT) of ~0.69 nm and acceptable gate leakage current density of 0.61 A/cm 2 @ (V fb  - 1)V could be obtained. The conduction mechanism through the gate dielectric is dominated by the F-N tunneling in the gate voltage range of -0.5 to -2 V. Under the same physical thickness and process flow, lower EOT and higher I on /I off ratio could be obtained while using Hf-Ti-O as gate dielectric compared with HfO 2 . With Hf-Ti-O as gate dielectric, two ETSOI PMOSFETs with gate width/gate length (W/L) of 0.5 μm/25 nm and 3 μm/40 nm show good performances such as high I on , I on /I off ratio in the magnitude of 10 5 , and peak transconductance, as well as suitable threshold voltage (-0.3~-0.2 V). Particularly, ETSOI PMOSFETs show superior short-channel control capacity with DIBL <82 mV/V and subthreshold swing <70 mV/decade.

n-VO{sub 2}/p-GaN based nitride–oxide heterostructure with various thickness of VO{sub 2} layer grown by MBE

Energy Technology Data Exchange (ETDEWEB)

Wang, Minhuan [Key Laboratory of Materials Modification by Laser, Ion and Electron Beams (Ministry of Education), School of Physics and Optoelectronic Technology, Dalian University of Technology, Dalian 116024 (China); Bian, Jiming, E-mail: jmbian@dlut.edu.cn [Key Laboratory of Materials Modification by Laser, Ion and Electron Beams (Ministry of Education), School of Physics and Optoelectronic Technology, Dalian University of Technology, Dalian 116024 (China); Key Laboratory of Inorganic Coating Materials, Chinese Academy of Sciences, Shanghai 200050, China (China); Sun, Hongjun; Liu, Weifeng [Key Laboratory of Materials Modification by Laser, Ion and Electron Beams (Ministry of Education), School of Physics and Optoelectronic Technology, Dalian University of Technology, Dalian 116024 (China); Zhang, Yuzhi [Key Laboratory of Inorganic Coating Materials, Chinese Academy of Sciences, Shanghai 200050, China (China); Luo, Yingmin [Key Laboratory of Materials Modification by Laser, Ion and Electron Beams (Ministry of Education), School of Physics and Optoelectronic Technology, Dalian University of Technology, Dalian 116024 (China)

2016-12-15

Graphical abstract: The significant influences of VO{sub 2} layer thickness on the structural, electrical and contact properties of the n-VO{sub 2}/p-GaN based nitride-oxide heterostructure were investigated systemically. - Highlights: • High quality VO{sub 2} films with precisely controlled thickness were grown on p-GaN/sapphire substrates by oxide molecular beam epitaxy (O-MBE). • A distinct reversible SMT phase transition was observed for the n-VO{sub 2}/p-GaN based nitride-oxide heterostructure. • The clear rectifying transport characteristics originated from the n-VO{sub 2}/p-GaN interface were demonstrated before and after SMT of the VO{sub 2} over layer. • The XPS analyses confirmed the valence state of V in VO{sub 2} films was principally composed of V{sup 4+} with trace amount of V{sup 5+}. • The design and modulation of the n-VO{sub 2}/p-GaN based heterostructure devices will benefit significantly from these achievements. - Abstract: High quality VO{sub 2} films with precisely controlled thickness were grown on p-GaN/sapphire substrates by oxide molecular beam epitaxy (O-MBE). Results indicated that a distinct reversible semiconductor-to-metal (SMT) phase transition was observed for all the samples in the temperature dependent electrical resistance measurement, and the influence of VO{sub 2} layer thickness on the SMT properties of the as-grown n-VO{sub 2}/p-GaN based nitride-oxide heterostructure was investigated. Meanwhile, the clear rectifying transport characteristics originated from the n-VO{sub 2}/p-GaN interface were demonstrated before and after SMT of the VO{sub 2} over layer, which were attributed to the p-n junction behavior and Schottky contact character, respectively. Moreover, the X-ray photoelectron spectroscopy (XPS) analyses confirmed the valence state of vanadium (V) in VO{sub 2} films was principally composed of V{sup 4+} with trace amount of V{sup 5+}. The design and modulation of the n-VO{sub 2}/p-GaN based heterostructure

Prediction model for oxide thickness on aluminum alloy cladding during irradiation

International Nuclear Information System (INIS)

Kim, Yeon Soo; Hofman, G.L.; Hanan, N.A.; Snelgrove, J.L.

2003-01-01

An empirical model predicting the oxide film thickness on aluminum alloy cladding during irradiation has been developed as a function of irradiation time, temperature, heat flux, pH, and coolant flow rate. The existing models in the literature are neither consistent among themselves nor fit the measured data very well. They also lack versatility for various reactor situations such as a pH other than 5, high coolant flow rates, and fuel life longer than ∼1200 hrs. Particularly, they were not intended for use in irradiation situations. The newly developed model is applicable to these in-reactor situations as well as ex-reactor tests, and has a more accurate prediction capability. The new model demonstrated with consistent predictions to the measured data of UMUS and SIMONE fuel tests performed in the HFR, Petten, tests results from the ORR, and IRIS tests from the OSIRIS and to the data from the out-of-pile tests available in the literature as well. (author)

Gamma-ray irradiation and post-irradiation at room and elevated temperature response of pMOS dosimeters with thick gate oxides

Directory of Open Access Journals (Sweden)

Pejović Momčilo M.

2011-01-01

Full Text Available Gamma-ray irradiation and post-irradiation response at room and elevated temperature have been studied for radiation sensitive pMOS transistors with gate oxide thickness of 100 and 400 nm, respectively. Their response was followed based on the changes in the threshold voltage shift which was estimated on the basis of transfer characteristics in saturation. The presence of radiation-induced fixed oxide traps and switching traps - which lead to a change in the threshold voltage - was estimated from the sub-threshold I-V curves, using the midgap technique. It was shown that fixed oxide traps have a dominant influence on the change in the threshold voltage shift during gamma-ray irradiation and annealing.

The effects of gate oxide thickness on radiation damage in MOS system

International Nuclear Information System (INIS)

Zhu Hui; Yan Rongliang; Wang Yu; He Jinming

1988-01-01

The dependences of the flatband voltage shift (ΔV FB ) and the threshold voltage shift (ΔV TH ) in MOS system on the oxide thickness (T ox ) and on total irradiated dose (D) of electron-beam and 60 Co γ-ray have been studied. It has been found that ΔV FB ∝ T ox 3 , with +10V of gate bias during irradiation for n-Si substrate MOS capacitors; ΔV TH ∝ T ox 3 D 2/3 , with 'on' gate bias during irradiation for n- and P-channel MOS transistors; ΔV TP ∝ T ox 2 D 2/3 , with 'off' gate bias during irradiation for P-channel MOS transistors. These results are explained by Viswanathan model. According to ∼T ox 3 dependence, the optimization of radiation hardening process for MOS system is also simply discussed

Oxidative and antioxidative status of children with acute bronchiolitis

Directory of Open Access Journals (Sweden)

Rusen Dundaroz

2013-07-01

órias agudas e crônicas. Nosso objetivo foi avaliar o estado oxidante/antioxidante de crianças com bronquiolite aguda por meio de mensuração da capacidade antioxidante total do plasma, estado oxidante total e índice de estresse oxidativo. Métodos: As crianças com bronquiolite aguda encaminhadas para o Departamento de Emergência Pediátrica do hospital universitário entre janeiro e abril 2012 foram comparadas a controles saudáveis de mesma idade. Os pacientes com bronquiolite aguda tiveram essa doença classificada como leve e moderada. O estado oxidante e antioxidante foi avaliado pela mensuração da capacidade antioxidante total do plasma, estado oxidante total e índice de estresse oxidativo. Resultados: Foram incluídas 31 crianças com bronquiolite aguda com idade de três meses a dois anos e 37 crianças saudáveis. O estado oxidante total (EOT foi maior em pacientes com bronquiolite aguda do que no grupo de controle (5,16 ± 1,99 μmol H2O2 em comparação a 3,78 ± 1,78 μmol H2O2 [p = 0,004]. A capacidade antioxidante total (CAT foi significativamente menor em crianças com bronquiolite que no grupo de controle (2,51 ± 0,37 μmol Trolox equivalente/L em comparação a 2,75 ± 0,39 μmol Trolox Eqv/L (p = 0,013. Os pacientes com bronquiolite moderada apresentaram níveis de EOT mais elevados que os com bronquiolite leve e os do grupo de controle (p = 0,03, p < 0,001. Os pacientes com bronquiolite moderada apresentaram níveis de IEO mais elevados que os do grupo de controle (p = 0,015. O nível de saturação de oxigênio de pacientes com bronquiolite foi inversamente correlacionado ao nível de EOT (r = -0,476, p < 0,05. Conclusão: O equilíbrio entre os sistemas oxidante e antioxidante é interrompido em crianças com bronquiolite moderada, indicando que o fator de estresse poderá ter um papel na patogênese da doença. Keywords: Bronchiolitis, Infant, Oxidative, Stress, Palavras-chave: Bronquiolite, Neonato, Oxidante, Estresse

Characterization of Series Resistance and Mobility Degradation Parameter and Optimizing Choice of Oxide Thickness in Thin Oxide N-Channel MOSFET

Directory of Open Access Journals (Sweden)

Noureddine Maouhoub

2011-01-01

Full Text Available We present two methods to extract the series resistance and the mobility degradation parameter in short-channel MOSFETs. The principle of the first method is based on the comparison between the exponential model and the classical model of effective mobility and for the second method is based on directly calculating the two parameters by solving a system of two equations obtained by using two different points in strong inversion at small drain bias from the characteristic (. The results obtained by these techniques have shown a better agreement with data measurements and allowed in the same time to determine the surface roughness amplitude and its influence on the maximum drain current and give the optimal oxide thickness.

Thickness dependent growth of low temperature atomic layer deposited zinc oxide films

International Nuclear Information System (INIS)

Montiel-González, Z.; Castelo-González, O.A.; Aguilar-Gama, M.T.; Ramírez-Morales, E.; Hu, H.

2017-01-01

Highlights: • Polycrystalline columnar ZnO thin films deposited by ALD at low temperatures. • Higher deposition temperature leads to a greater surface roughness in the ALD ZnO films. • Higher temperature originates larger refractive index values of the ALD ZnO films. • ZnO thin films were denser as the numbers of ALD deposition cycles were larger. • XPS analysis revels mayor extent of the DEZ reaction during the ALD process. - Abstract: Zinc oxide films are promising to improve the performance of electronic devices, including those based on organic materials. However, the dependence of the ZnO properties on the preparation conditions represents a challenge to obtain homogeneous thin films that satisfy specific applications. Here, we prepared ZnO films of a wide range of thicknesses by atomic layer deposition (ALD) at relatively low temperatures, 150 and 175 °C. From the results of X-ray photoelectron spectroscopy, X-ray diffraction and Spectroscopic Ellipsometry it is concluded that the polycrystalline structure of the wurtzite is the main phase of the ALD samples, with OH groups on their surface. Ellipsometry revealed that the temperature and the deposition cycles have a strong effect on the films roughness. Scanning electron micrographs evidenced such effect, through the large pyramids developed at the surface of the films. It is concluded that crystalline ZnO thin films within a broad range of thickness and roughness can be obtained for optic or optoelectronic applications.

Evolution of the thickness of the aluminum oxide film due to the pH of the cooling water and surface temperature of the fuel elements clad of a nuclear reactor

International Nuclear Information System (INIS)

Babiche, Ivan

2013-01-01

This paper describes the mechanism of growth of a film of aluminum oxide on an alloy of the same material, which serves as a protective surface being the constituent material of the RP-10 nuclear reactor fuel elements clads. The most influential parameters on the growth of this film are: the pH of the cooling water and the clad surface temperature of the fuel element. For this study, a mathematical model relating the evolution of the aluminum oxide layer thickness over the time, according to the same oxide film using a power law is used. It is concluded that the time of irradiation, the heat flux at the surface of the aluminum material, the speed of the coolant, the thermal conductivity of the oxide, the initial thickness of the oxide layer and the solubility of the protective oxide are parameters affecting in the rate and film formation. (author).

Model for thickness dependence of radiation charging in MOS structures

Science.gov (United States)

Viswanathan, C. R.; Maserjian, J.

1976-01-01

The model considers charge buildup in MOS structures due to hole trapping in the oxide and the creation of sheet charge at the silicon interface. The contribution of hole trapping causes the flatband voltage to increase with thickness in a manner in which square and cube dependences are limiting cases. Experimental measurements on samples covering a 200 - 1000 A range of oxide thickness are consistent with the model, using independently obtained values of hole-trapping parameters. An important finding of our experimental results is that a negative interface charge contribution due to surface states created during irradiation compensates most of the positive charge in the oxide at flatband. The tendency of the surface states to 'track' the positive charge buildup in the oxide, for all thicknesses, applies both in creation during irradiation and in annihilation during annealing. An explanation is proposed based on the common defect origin of hole traps and potential surface states.

Comparison of different methods for measuring the passive film thickness on metals

International Nuclear Information System (INIS)

Benoit, Marie; Bataillon, Christian; Gwinner, Benoit; Miserque, Frédéric; Orazem, Mark E.; Sánchez-Sánchez, Carlos M.; Tribollet, Bernard; Vivier, Vincent

2016-01-01

Highlights: • In situ EIS and ex situ XPS were used for the characterization of zirconium oxide films. • The film thicknesses can be obtained from the analysis of a single EIS diagram. • A convenient graphical method to extract film properties is proposed. - Abstract: In situ electrochemical impedance spectroscopy (EIS) and ex situ X-ray photoelectron spectroscopy (XPS) measurements on electrogenerated zirconium oxide films on zirconium (Zr/ZrO_2) were used to quantify the oxide film thickness and resistivity profiles through the oxide. The EIS analysis presented here takes advantage of the high-frequency domain at which the constant-phase element (CPE) behavior of the oxide film reverts to a capacitive response and the Cole-Cole representations of the complex capacitance to extract the high-frequency capacitance of the oxide film without reference to the nature of the time-constant distribution within the oxide film. The film thickness of the ZrO_2 samples measured from the high-frequency capacitance of EIS were in good agreement with the thickness obtained from XPS. Moreover, the EIS analysis presented is based on the use of the integral solution of the power law model, which allows to obtain in one single EIS experiment, both the film thickness and the resistivity profile in the ZrO_2 film. This work suggests a convenient graphical method to extract film properties and serves to validate a key assumption of the power-law model for interpretation of CPE parameters in terms of physical properties.

The nanostructure of microbially-reduced graphene oxide fosters thick and highly-performing electrochemically-active biofilms

Science.gov (United States)

Virdis, Bernardino; Dennis, Paul G.

2017-07-01

Biofilms of electrochemically-active organisms are used in microbial electrochemical technologies (METs) to catalyze bioreactions otherwise not possible at bare electrodes. At present, however, achievable current outputs are still below levels considered sufficient for economic viability of large-scale METs implementations. Here, we report three-dimensional, self-aggregating biofilm composites comprising of microbial cells embedded with microbially-reduced graphene oxide (rGO) nanoparticles to form a thick macro-porous network with superior electrochemical properties. In the presence of metabolic substrate, these hybrid biofilms are capable of producing up to five times more catalytic current than the control biofilms. Cyclic voltammetry, linear sweep voltammetry, and electrochemical impedance spectroscopy, show that in spite of the increased thickness, the biofilms amended with GO display lower polarization/charge transfer resistance compared to the controls, which we ascribe to the incorporation of rGO into the biofilms, which (1) promotes fast electron transfer, yet conserving a macroporous structure that allows free diffusion of reactants and products, and (2) enhances the interfacial dynamics by allowing a higher load of microbial cells per electrode surface area. These results suggest an easy-to-apply and cost-effective method to produce high-performing electrochemically-active biofilms in situ.

Stress-induced leakage current characteristics of PMOS fabricated by a new multi-deposition multi-annealing technique with full gate last process

International Nuclear Information System (INIS)

Wang Yanrong; Yang Hong; Xu Hao; Luo Weichun; Qi Luwei; Zhang Shuxiang; Wang Wenwu; Zhu Huilong; Zhao Chao; Chen Dapeng; Ye Tianchun; Yan Jiang

2017-01-01

In the process of high- k films fabrication, a novel multi deposition multi annealing (MDMA) technique is introduced to replace simple post deposition annealing. The leakage current decreases with the increase of the post deposition annealing (PDA) times. The equivalent oxide thickness (EOT) decreases when the annealing time(s) change from 1 to 2. Furthermore, the characteristics of SILC (stress-induced leakage current) for an ultra-thin SiO 2 /HfO 2 gate dielectric stack are studied systematically. The increase of the PDA time(s) from 1 to 2 can decrease the defect and defect generation rate in the HK layer. However, increasing the PDA times to 4 and 7 may introduce too much oxygen, therefore the type of oxygen vacancy changes. (paper)

Thin zirconium oxides

International Nuclear Information System (INIS)

Oviedo, Cristina

2000-01-01

Polycrystalline Zr and two pure Zr single-crystal samples, one oriented with the normal to the surface parallel to the c-axis of the hcp structure (Z1) and the other with the normal perpendicular to c (Z2), were oxidised at 10 -8 , 10 -7 and 10 -6 Torr and room temperature. Oxidation kinetics, composition and thicknesses of the oxide films formed in each case were analyzed using XPS (X-ray Photoelectron Spectroscopy) as the main technique. The oxidation kinetics followed logarithmic laws in all cases. The deconvolution of XPS Zr3d peaks indicated the formation of two Zr-O compounds before the formation of ZrO 2 . Varying the photoelectrons take-off angle, the compound distribution inside the oxide films could be established. Thus, it was confirmed that the most external oxide, in contact with the gas, was ZrO 2 . The thickness of the films grown at the different pressures was determined. In the polycrystalline samples, thicknesses between 15 and 19 ± 2Angstroem were obtained for pressures between 10 -8 and 10 -6 Torr, in close coincidence with the determined ones for Z2. The thicknesses measured in Z1 were smaller, reaching 13 ± 2Angstroem for the oxidations performed at 10 -6 Torr. (author)

Microstructure and thermoelectric properties of screen-printed thick-films of misfit-layered cobalt oxides with Ag addition

DEFF Research Database (Denmark)

Van Nong, Ngo; Samson, Alfred Junio; Pryds, Nini

2012-01-01

Thermoelectric properties of thick (~60 μm) films prepared by a screen-printing technique using p-type misfit-layered cobalt oxide Ca3Co4O9+δ with Ag addition have been studied. The screen-printed films were sintered in air at various temperatures ranging from 973 K to 1223 K. After each sintering...... process, crystal and microstructure analyses were carried out to determine the optimal sintering condition. The results show that the thermoelectric properties of pure Ca3Co4O9+δ thick film are comparable to those of cold isostatic pressing (CIP) samples. We found that the maximum power factor...... was improved by about 67% (to 0.3 mW/m K2) for film with proper silver (Ag) metallic inclusions as compared with 0.18 mW/m K2 for pure Ca3Co4O9+δ film under the same sintering condition of 1223 K for 2 h in air....

Rhodamine B triggers ovarian toxicity through oxidative stress, decreases in the number of follicles, 17B-estradiol level, and thickness of endometrium

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Syiska Atik Maryanti

2014-06-01

Full Text Available Objective: The purpose of this study was to analyze the effects of exposure to rhodamine B on ovarian oxidative stress, ovarian follicles, hormone 17beta-estradiol and thickness of endometrium. Methods: A total of 28 female rats were divided into four groups consisting of control; groups treated with rhodamine B at doses of 4.5; 9, and 18 milligram/200 gram body weight. Rhodamine B was administered orally for 36 days with the probe. Analysis of MDA level was done spectrophotometrically. Analysis of the number of ovarian follicles and thickness of endometrium was done histopathologically by hematoxylin eosin staining. Analysis of 17-estradiol level was done by ELISA. Results: Rhodamine B administered in different doses in female rats can increase ovarian MDA levels significantly than the control (P 0.05. Administration of rhodamine B of the second and third doses in female rats can reduce the number of primary, secondary, and De Graaf follicles significantly compared to the control (P 0.05. Administration of rhodamine B of the second and third doses in female rats can reduce 17-estradiol level significantly compared to the control (P 0.05. The administration of rhodamine B could reduce thickness of endometrium significantly compared to the control (P 0.05. Conclusion: It was concluded that administration of rhodamine B triggered ovarian toxicity through oxidative stress, a decrease in the number of follicles, and decreased level of 17-estradiol which ultimately lowered the thickness of endometrium. [Cukurova Med J 2014; 39(3.000: 451-457

Effect of Al2O3 insulator thickness on the structural integrity of amorphous indium-gallium-zinc-oxide based thin film transistors.

Science.gov (United States)

Kim, Hak-Jun; Hwang, In-Ju; Kim, Youn-Jea

2014-12-01

The current transparent oxide semiconductors (TOSs) technology provides flexibility and high performance. In this study, multi-stack nano-layers of TOSs were designed for three-dimensional analysis of amorphous indium-gallium-zinc-oxide (a-IGZO) based thin film transistors (TFTs). In particular, the effects of torsional and compressive stresses on the nano-sized active layers such as the a-IGZO layer were investigated. Numerical simulations were carried out to investigate the structural integrity of a-IGZO based TFTs with three different thicknesses of the aluminum oxide (Al2O3) insulator (δ = 10, 20, and 30 nm), respectively, using a commercial code, COMSOL Multiphysics. The results are graphically depicted for operating conditions.

Study of thickness and uniformity of oxide passivation with DI-O3 on silicon substrate for electronic and photonic applications

Science.gov (United States)

Sharma, Mamta; Hazra, Purnima; Singh, Satyendra Kumar

2018-05-01

Since the beginning of semiconductor fabrication technology evolution, clean and passivated substrate surface is one of the prime requirements for fabrication of Electronic and optoelectronic device fabrication. However, as the scale of silicon circuits and device architectures are continuously decreased from micrometer to nanometer (from VLSI to ULSI technology), the cleaning methods to achieve better wafer surface qualities has raised research interests. The development of controlled and uniform silicon dioxide is the most effective and reliable way to achieve better wafer surface quality for fabrication of electronic devices. On the other hand, in order to meet the requirement of high environment safety/regulatory standards, the innovation of cleaning technology is also in demand. The controlled silicon dioxide layer formed by oxidant de-ionized ozonated water has better uniformity. As the uniformity of the controlled silicon dioxide layer is improved on the substrate, it enhances the performance of the devices. We can increase the thickness of oxide layer, by increasing the ozone time treatment. We reported first time to measurement of thickness of controlled silicon dioxide layer and obtained the uniform layer for same ozone time.

Analysis of switching characteristics for negative capacitance ultra-thin-body germanium-on-insulator MOSFETs

Science.gov (United States)

Pi-Ho Hu, Vita; Chiu, Pin-Chieh

2018-04-01

The impact of device parameters on the switching characteristics of negative capacitance ultra-thin-body (UTB) germanium-on-insulator (NC-GeOI) MOSFETs is analyzed. NC-GeOI MOSFETs with smaller gate length (L g), EOT, and buried oxide thickness (T box) and thicker ferroelectric layer thickness (T FE) exhibit larger subthreshold swing improvements over GeOI MOSFETs due to better capacitance matching. Compared with GeOI MOSFETs, NC-GeOI MOSFETs exhibit better switching time due to improvements in effective drive current (I eff) and subthreshold swing. NC-GeOI MOSFET exhibits larger ST improvements at V dd = 0.3 V (-82.9%) than at V dd = 0.86 V (-9.7%), because NC-GeOI MOSFET shows 18.2 times higher I eff than the GeOI MOSFET at V dd = 0.3 V, while 2.5 times higher I eff at V dd = 0.86 V. This work provides the device design guideline of NC-GeOI MOSFETs for ultra-low power applications.

Silicon surface passivation using thin HfO2 films by atomic layer deposition

International Nuclear Information System (INIS)

Gope, Jhuma; Vandana; Batra, Neha; Panigrahi, Jagannath; Singh, Rajbir; Maurya, K.K.; Srivastava, Ritu; Singh, P.K.

2015-01-01

Graphical abstract: - Highlights: • HfO 2 films using thermal ALD are studied for silicon surface passivation. • As-deposited thin film (∼8 nm) shows better passivation with surface recombination velocity (SRV) <100 cm/s. • Annealing improves passivation quality with SRV ∼20 cm/s for ∼8 nm film. - Abstract: Hafnium oxide (HfO 2 ) is a potential material for equivalent oxide thickness (EOT) scaling in microelectronics; however, its surface passivation properties particularly on silicon are not well explored. This paper reports investigation on passivation properties of thermally deposited thin HfO 2 films by atomic layer deposition system (ALD) on silicon surface. As-deposited pristine film (∼8 nm) shows better passivation with <100 cm/s surface recombination velocity (SRV) vis-à-vis thicker films. Further improvement in passivation quality is achieved with annealing at 400 °C for 10 min where the SRV reduces to ∼20 cm/s. Conductance measurements show that the interface defect density (D it ) increases with film thickness whereas its value decreases after annealing. XRR data corroborate with the observations made by FTIR and SRV data.

Densification of ∼5 nm-thick SiO_2 layers by nitric acid oxidation

International Nuclear Information System (INIS)

Choi, Jaeyoung; Joo, Soyeong; Park, Tae Joo; Kim, Woo-Byoung

2017-01-01

Highlights: • Leakage current density of the commercial PECVD grown ∼5 nm SiO_2 layer has been decreased about three orders of magnitude by densification. • The densification of SiO_2 layer is achieved by high oxidation ability of O·. • Densities of suboxide, fixed charge (N_f) and defect state (N_d) in SiO_2/Si interface are decreased by NAOS and PMA. • Tunneling barrier height (Φ_t) is increased because of the increase of atomic density in SiO_2 layer. - Abstract: Low-temperature nitric acid (HNO_3) oxidation of Si (NAOS) has been used to improve the interface and electrical properties of ∼5 nm-thick SiO_2/Si layers produced by plasma-enhanced chemical vapor deposition (PECVD). Investigations of the physical properties and electrical characteristics of these thin films revealed that although their thickness is not changed by NAOS, the leakage current density at a gate bias voltage of −1 V decreases by about two orders of magnitude from 1.868 × 10"−"5 A/cm"2. This leakage current density was further reduced by post-metallization annealing (PMA) at 250 °C for 10 min in a 5 vol.% hydrogen atmosphere, eventually reaching a level (5.2 × 10"−"8 A/cm"2) approximately three orders of magnitude less than the as-grown SiO_2 layer. This improvement is attributed to a decrease in the concentration of suboxide species (Si"1"+, Si"2"+ and Si"3"+) in the SiO_2/Si interface, as well as a decrease in the equilibrium density of defect sites (N_d) and fixed charge density (N_f). The barrier height (Φ_t) generated by a Poole-Frenkel mechanism also increased from 0.205 to 0.371 eV after NAOS and PMA. The decrease in leakage current density is therefore attributed to a densification of the SiO_2 layer in combination with the removal of OH species and increase in interfacial properties at the SiO_2/Si interface.

Monitoring the oxidation of nuclear fuel cladding using Raman spectroscopy

International Nuclear Information System (INIS)

Mi, Hongyi; Mikael, Solomon; Allen, Todd; Sridharan, Kumar; Butt, Darryl; Blanchard, James P.; Ma, Zhenqiang

2014-01-01

In order to observe Zircaloy-4 (Zr-4) cladding oxidation within a spent fuel canister, cladding oxidized in air at 500 °C was investigated by micro-Raman spectroscopy to measure the oxide layer thickness. Systematic Raman scans were performed to study the relationship between typical Raman spectra and various oxide layer thicknesses. The thicknesses of the oxide layers developed for various exposure times were measured by cross-sectional Scanning Electron Microscopy (SEM). The results of this work reveal that each oxide layer thickness has a corresponding typical Raman spectrum. Detailed analysis suggests that the Raman scattering peaks around wave numbers of 180 cm −1 and 630 cm −1 are the best choices for accurately determining the oxide layer thickness. After Gaussian–Lorentzian deconvolution, these two peaks can be quantitatively represented by four peaks. The intensities of the deconvoluted peaks increase consistently as the oxide layer becomes thicker and sufficiently strong signals are produced, allowing one to distinguish the bare and oxidized cladding samples, as well as samples with different oxide layer thicknesses. Hence, a process that converts sample oxide layer thickness to optical signals can be achieved

Evaluation of flow accelerated corrosion by coupled analysis of corrosion and flow dynamics (3), relationship of oxide film thickness, hematite/magnetite ratio, ECP and wall thinning rate

International Nuclear Information System (INIS)

Uchida, Shunsuke; Naitoh, Masanori; Okada, Hidetoshi; Uehara, Yasushi; Koshizuka, Seiichi

2009-01-01

Systematic approaches for evaluating flow accelerated corrosion (FAC) are desired before discussing application of countermeasures for FAC. Firstly, future FAC occurrence should be evaluated to identify locations where a higher possibility of FAC occurrence exists, and then, wall thinning rate at the identified FAC occurrence zone is evaluated to obtain the preparation time for applying countermeasures. Wall thinning rates were calculated with the coupled models of static electrochemical analysis and dynamic double oxide layer analysis. Anodic current density and electrochemical corrosion potential (ECP) were calculated with the static electrochemistry model based on an Evans diagram and ferrous ion release rate determined by the anodic current density was applied as input for the dynamic double oxide layer model. Some of the dissolved ferrous ion was removed to the bulk water and others precipitated on the surface as magnetite particles. The thickness of oxide layer was calculated with the dynamic double oxide layer model and then was applied as input for the electrochemistry model. It was confirmed that the calculated results based on the coupled models resulted good agreement with the measured ones. Higher ECP was essential for preventing FAC rate. Moderated conditions due to lower mass transfer coefficients resulted in thicker oxide layer thickness and then higher ECP, while moderated corrosion conditions due to higher oxidant concentrations resulted in larger hematite/magnetite rate and then higher ECP. (author)

Electrochemical impedance spectroscopy of oxidized porous silicon

Energy Technology Data Exchange (ETDEWEB)

Mula, Guido, E-mail: guido.mula@unica.it [Dipartimento di Fisica, Università degli Studi di Cagliari, Cittadella Universitaria di Monserrato, S.P. 8 km 0.700, 09042 Cagliari (Italy); Tiddia, Maria V. [Dipartimento di Fisica, Università degli Studi di Cagliari, Cittadella Universitaria di Monserrato, S.P. 8 km 0.700, 09042 Cagliari (Italy); Ruffilli, Roberta [Nanochemistry, Istituto Italiano di Tecnologia, Via Morego 30, 16163 Genova (Italy); Falqui, Andrea [Nanochemistry, Istituto Italiano di Tecnologia, Via Morego 30, 16163 Genova (Italy); Dipartimento di Scienze Chimiche e Geologiche, Università degli Studi di Cagliari, Cittadella Universitaria di Monserrato, S.P. 8 km 0.700, 09042 Cagliari (Italy); Palmas, Simonetta; Mascia, Michele [Dipartimento di Ingegneria Meccanica Chimica e dei Materiali, Università degli Studi di Cagliari, Piazza d' Armi, 09126 Cagliari (Italy)

2014-04-01

We present a study of the electrochemical oxidation process of porous silicon. We analyze the effect of the layer thickness (1.25–22 μm) and of the applied current density (1.1–11.1 mA/cm{sup 2}, values calculated with reference to the external samples surface) on the oxidation process by comparing the galvanostatic electrochemical impedance spectroscopy (EIS) measurements and the optical specular reflectivity of the samples. The results of EIS were interpreted using an equivalent circuit to separate the contribution of different sample parts. A different behavior of the electrochemical oxidation process has been found for thin and thick samples: whereas for thin samples the oxidation process is univocally related to current density and thickness, for thicker samples this is no more true. Measurements by Energy Dispersive Spectroscopy using a Scanning Electron Microscopy confirmed that the inhomogeneity of the electrochemical oxidation process is increased by higher thicknesses and higher currents. A possible explanation is proposed to justify the different behavior of thin and thick samples during the electrochemical process. - Highlights: • A multidisciplinary approach on porous Si electrochemical oxidation is proposed. • Electrochemical, optical, and structural characterizations are used. • Layer thickness and oxidation current effects are shown. • An explanation of the observed behavior is proposed.

Structure and corrosion behavior of sputter deposited cerium oxide based coatings with various thickness on Al 2024-T3 alloy substrates

Energy Technology Data Exchange (ETDEWEB)

Liu, Yuanyuan [College of Materials Science and Engineering, Chongqing University, Chongqing 400045 (China); Materials Research Center, Department of Materials Science and Engineering, Missouri University of Science and Technology, Rolla, MO 65409 (United States); Huang, Jiamu, E-mail: huangjiamu@cqu.edu.cn [College of Materials Science and Engineering, Chongqing University, Chongqing 400045 (China); Claypool, James B.; Castano, Carlos E. [Materials Research Center, Department of Materials Science and Engineering, Missouri University of Science and Technology, Rolla, MO 65409 (United States); O’Keefe, Matthew J., E-mail: mjokeefe@mst.edu [Materials Research Center, Department of Materials Science and Engineering, Missouri University of Science and Technology, Rolla, MO 65409 (United States)

2015-11-15

Highlights: • Crystalline CeO{sub 2} coatings are deposited on Al 2024-T3 alloys by magnetron sputtering. • The crystal size and internal stress both increased with the thickness of CeO{sub 2} coating. • The ∼210 nm thick coating has the highest adhesion strength to the Al alloy substrate. • The ∼900 nm thick coating increased the corrosion resistance two orders of magnitude. • CeO{sub 2} coatings provide good cathodic inhibition for Al alloys by acting as physical barriers. - Abstract: Cerium oxide based coatings from ∼100 to ∼1400 nm in thickness were deposited onto Al 2024-T3 alloy substrates by magnetron sputtering of a 99.99% pure CeO{sub 2} target. The crystallite size of CeO{sub 2} coatings increased from 15 nm to 46 nm as the coating thickness increased from ∼100 nm to ∼1400 nm. The inhomogeneous lattice strain increased from 0.36% to 0.91% for the ∼100 nm to ∼900 nm thick coatings and slightly decreased to 0.89% for the ∼1400 nm thick coating. The highest adhesion strength to Al alloy substrates was for the ∼210 nm thick coating, due to a continuous film coverage and low internal stress. Electrochemical measurements indicated that sputter deposited crystalline CeO{sub 2} coatings acted as physical barriers that provide good cathodic inhibition for Al alloys in saline solution. The ∼900 nm thick CeO{sub 2} coated sample had the best corrosion performance that increased the corrosion resistance by two orders magnitude and lowered the cathodic current density 30 times compared to bare Al 2024-T3 substrates. The reduced defects and exposed surface, along with suppressed charge mobility, likely accounts for the improved corrosion performance as coating thickness increased from ∼100 nm to ∼900 nm. The corrosion performance decreased for ∼1400 nm thick coatings due in part to an increase in coating defects and porosity along with a decrease in adhesion strength.

Evaluation of flow accelerated corrosion by coupled analysis of corrosion and flow dynamics. Relationship of oxide film thickness, hematite/magnetite ratio, ECP and wall thinning rate

International Nuclear Information System (INIS)

Uchida, Shunsuke; Naitoh, Masanori; Okada, Hidetoshi; Uehara, Yasushi; Koshizuka, Seiichi

2011-01-01

Systematic approaches to evaluate flow accelerated corrosion (FAC) are desired before discussing application of countermeasures for FAC. First, future FAC occurrence should be evaluated to identify locations where a higher possibility of FAC occurrence exists, and then, wall thinning rate at the identified FAC occurrence zone is evaluated to obtain the preparation time for applying countermeasures. Wall thinning rates were calculated with two coupled models: 1.static electrochemical analysis and 2.dynamic oxide layer growth analysis. The anodic current density and the electrochemical corrosion potential (ECP) were calculated with the static electrochemistry model based on an Evans diagram. The ferrous ion release rate, determined by the anodic current density, was applied as input for the dynamic double oxide layer model. Some of the dissolved ferrous ion was removed to the bulk water and others precipitated on the surface as magnetite particles. The thickness of oxide layer was calculated with the dynamic oxide layer growth model and then its value was used as input in the electrochemistry model. It was confirmed that the calculated results (corrosion rate and ECP) based on the coupled models were in good agreement with the measured ones. Higher ECP was essential for preventing FAC rate. Moderated conditions due to lower mass transfer coefficients resulted in thicker oxide layer thickness and then higher ECP, while moderated corrosion conditions due to higher oxidant concentrations resulted in larger hematite/magnetite rate and then higher ECP.

Thickness-self-controlled synthesis of porous transparent polyaniline-reduced graphene oxide composites towards advanced bifacial dye-sensitized solar cells

Science.gov (United States)

Wang, Yu-Sheng; Li, Shin-Ming; Hsiao, Sheng-Tsung; Liao, Wei-Hao; Yang, Shin-Yi; Tien, Hsi-Wen; Ma, Chen-Chi M.; Hu, Chi-Chang

2014-08-01

A powerful synthesis strategy is proposed for fabricating porous polyaniline-reduced graphene oxide (PANI-RGO) composites with transparency up to 80% and thickness from 300 to 1000 nm for the counter electrode (CE) of bifacial dye-sensitizing solar cells (DSSCs). The first step is to combine the in-situ positive charge transformation of graphene oxide (GO) through aniline (ANI) prepolymerization and the electrostatic adsorption of ANI oligomer-GO to effectively control the thickness of ultrathin PANI-GO films by adjusting pH of the polymerization media. In the second step, PANI-GO films are reduced with hydroiodic acid to simultaneously enhance the apparent redox activity for the I3-/I- couple and their electronic conductivity. Incorporating the RGO increases the transparency of PANI and facilitates the light-harvesting from the rear side. A DSSC assembled with such a transparent PANI-RGO CE exhibits an excellent efficiency of 7.84%, comparable to 8.19% for a semi-transparent Pt-based DSSC. The high light-harvesting ability of PANI-RGO enhances the efficiency retention between rear- and front-illumination modes to 76.7%, compared with 69.1% for a PANI-based DSSC. The higher retention reduces the power-to-weight ratio and the total cost of bifacial DSSCs, which is also promising in other applications, such as windows, power generators, and panel screens.

Control of Alq3 wetting layer thickness via substrate surface functionalization.

Science.gov (United States)

Tsoi, Shufen; Szeto, Bryan; Fleischauer, Michael D; Veinot, Jonathan G C; Brett, Michael J

2007-06-05

The effects of substrate surface energy and vapor deposition rate on the initial growth of porous columnar tris(8-hydroxyquinoline)aluminum (Alq3) nanostructures were investigated. Alq3 nanostructures thermally evaporated onto as-supplied Si substrates bearing an oxide were observed to form a solid wetting layer, likely caused by an interfacial energy mismatch between the substrate and Alq3. Wetting layer thickness control is important for potential optoelectronic applications. A dramatic decrease in wetting layer thickness was achieved by depositing Alq3 onto alkyltrichlorosilane-derivatized Si/oxide substrates. Similar effects were noted with increasing deposition rates. These two effects enable tailoring of the wetting layer thickness.

Thickness independent reduced forming voltage in oxygen engineered HfO{sub 2} based resistive switching memories

Energy Technology Data Exchange (ETDEWEB)

Sharath, S. U., E-mail: sharath@oxide.tu-darmstadt.de; Kurian, J.; Komissinskiy, P.; Hildebrandt, E.; Alff, L. [Institute of Materials Science, Technische Universität Darmstadt, 64287 Darmstadt (Germany); Bertaud, T.; Walczyk, C.; Calka, P. [IHP, Im Technologiepark 25, 15236 Frankfurt Oder (Germany); Schroeder, T. [IHP, Im Technologiepark 25, 15236 Frankfurt Oder (Germany); Brandenburgische Technische Universität, Konrad-Zuse-Strasse 1, 03046 Cottbus (Germany)

2014-08-18

The conducting filament forming voltage of stoichiometric hafnium oxide based resistive switching layers increases linearly with layer thickness. Using strongly reduced oxygen deficient hafnium oxide thin films grown on polycrystalline TiN/Si(001) substrates, the thickness dependence of the forming voltage is strongly suppressed. Instead, an almost constant forming voltage of about 3 V is observed up to 200 nm layer thickness. This effect suggests that filament formation and switching occurs for all samples in an oxidized HfO{sub 2} surface layer of a few nanometer thickness while the highly oxygen deficient thin film itself merely serves as a oxygen vacancy reservoir.

Development of a novel gas sensor based on oxide thick films

International Nuclear Information System (INIS)

Arshak, K.; Gaidan, I.

2005-01-01

Zinc and iron oxide thick film gas sensors were fabricated using screen-printing technology on glass substrates that had silver interdigitated electrodes. The sensor was used to detect methanol, ethanol and propanol with a concentration range of 0-8000 ppm. Using the formula to calculate a change in resistance, ΔR = R gas - R air, resistance was seen to increase linearly alongside increasing concentrations of the gas vapours. The sensor showed the highest sensitivity to propanol followed by ethanol and methanol when the operating temperature was 25 deg. C. The sensitivities (slope of graphs) of methanol, ethanol and propanol changed from 0.07, 0.5, and 3.54 to 0.075, 0.115, and 0.5 Ω/ppm when the operating temperature was increased from 25 to 50 deg. C. The response/recovery times of the sensor for 4000 ppm at room temperature were, 10/10, 15/20 and 40/70 s for methanol, ethanol and propanol, respectively. X-ray diffraction (XRD) was used to examine the final composition of the film, while scanning electron microscopy (SEM) was used to examine the final composition of grain size. The final composition has two phases: ZnO and ZnFe 2 O 4

Effect of thickness on optoelectrical properties of Nb-doped indium tin oxide thin films deposited by RF magnetron sputtering

Science.gov (United States)

Li, Shi-na; Ma, Rui-xin; Ma, Chun-hong; Li, Dong-ran; Xiao, Yu-qin; He, Liang-wei; Zhu, Hong-min

2013-05-01

Niobium-doped indium tin oxide (ITO:Nb) thin films are prepared on glass substrates with various film thicknesses by radio frequency (RF) magnetron sputtering from one piece of ceramic target material. The effects of thickness (60-360 nm) on the structural, electrical and optical properties of ITO: Nb films are investigated by means of X-ray diffraction (XRD), ultraviolet (UV)-visible spectroscopy, and electrical measurements. XRD patterns show the highly oriented (400) direction. The lowest resistivity of the films without any heat treatment is 3.1×10-4Ω·cm-1, and the resistivity decreases with the increase of substrate temperature. The highest Hall mobility and carrier concentration are 17.6 N·S and 1.36×1021 cm-3, respectively. Band gap energy of the films depends on substrate temperature, which varies from 3.48 eV to 3.62 eV.

Inverted process for graphene integrated circuits fabrication.

Science.gov (United States)

Lv, Hongming; Wu, Huaqiang; Liu, Jinbiao; Huang, Can; Li, Junfeng; Yu, Jiahan; Niu, Jiebin; Xu, Qiuxia; Yu, Zhiping; Qian, He

2014-06-07

CMOS compatible 200 mm two-layer-routing technology is employed to fabricate graphene field-effect transistors (GFETs) and monolithic graphene ICs. The process is inverse to traditional Si technology. Passive elements are fabricated in the first metal layer and GFETs are formed with buried gate/source/drain in the second metal layer. Gate dielectric of 3.1 nm in equivalent oxide thickness (EOT) is employed. 500 nm-gate-length GFETs feature a yield of 80% and fT/fmax = 17 GHz/15.2 GHz RF performance. A high-performance monolithic graphene frequency multiplier is demonstrated using the proposed process. Functionality was demonstrated up to 8 GHz input and 16 GHz output. The frequency multiplier features a 3 dB bandwidth of 4 GHz and conversion gain of -26 dB.

The effect of oxide shell thickness on the structural, electronic, and optical properties of Si-SiO{sub 2} core-shell nano-crystals: A (time dependent)density functional theory study

Energy Technology Data Exchange (ETDEWEB)

Nazemi, Sanaz, E-mail: s.nazemi@ut.ac.ir, E-mail: pourfath@ut.ac.ir; Soleimani, Ebrahim Asl [School of Electrical and Computer Engineering, University of Tehran, Tehran 14395-515 (Iran, Islamic Republic of); Pourfath, Mahdi, E-mail: s.nazemi@ut.ac.ir, E-mail: pourfath@ut.ac.ir [School of Electrical and Computer Engineering, University of Tehran, Tehran 14395-515 (Iran, Islamic Republic of); Institute for Microelectronics, Technische Universität Wien, Wien A-1040 (Austria); Kosina, Hans [Institute for Microelectronics, Technische Universität Wien, Wien A-1040 (Austria)

2016-04-14

Due to their tunable properties, silicon nano-crystals (NC) are currently being investigated. Quantum confinement can generally be employed for size-dependent band-gap tuning at dimensions smaller than the Bohr radius (∼5 nm for silicon). At the nano-meter scale, however, increased surface-to-volume ratio makes the surface effects dominant. Specifically, in Si-SiO{sub 2} core-shell semiconductor NCs the interfacial transition layer causes peculiar electronic and optical properties, because of the co-existence of intermediate oxidation states of silicon (Si{sup n+}, n = 0–4). Due to the presence of the many factors involved, a comprehensive understanding of the optical properties of these NCs has not yet been achieved. In this work, Si-SiO{sub 2} NCs with a diameter of 1.1 nm and covered by amorphous oxide shells with thicknesses between 2.5 and 4.75 Å are comprehensively studied, employing density functional theory calculations. It is shown that with increased oxide shell thickness, the low-energy part of the optical transition spectrum of the NC is red shifted and attenuated. Moreover, the absorption coefficient is increased in the high-energy part of the spectrum which corresponds to SiO{sub 2} transitions. Structural examinations indicate a larger compressive stress on the central silicon cluster with a thicker oxide shell. Examination of the local density of states reveals the migration of frontier molecular orbitals from the oxide shell into the silicon core with the increase of silica shell thickness. The optical and electrical properties are explained through the analysis of the density of states and the spatial distribution of silicon sub-oxide species.

Controlling the Performance of P-type Cu2O/SnO Bilayer Thin-Film Transistors by Adjusting the Thickness of the Copper Oxide Layer

KAUST Repository

Al-Jawhari, Hala A.; Caraveo-Frescas, Jesus Alfonso; Hedhili, Mohamed N.

2014-01-01

The effect of copper oxide layer thickness on the performance of Cu2O/SnO bilayer thin-film transistors was investigated. By using sputtered Cu2O films produced at an oxygen partial pressure, Opp, of 10% as the upper layer and 3% Opp SnO films

THE THICKNESS DEPENDENCE OF OXYGEN PERMEABILITY IN SOL-GEL DERIVED CGO-COFE2O4 THIN FILMS ON POROUS CERAMIC SUBSTRATES: A SPUTTERED BLOCKING LAYER FOR THICKNESS CONTROL

Energy Technology Data Exchange (ETDEWEB)

Brinkman, K

2009-01-08

Mixed conductive oxides are a topic of interest for applications in oxygen separation membranes as well as use in producing hydrogen fuel through the partial oxidation of methane. The oxygen flux through the membrane is governed both by the oxygen ionic conductivity as well as the material's electronic conductivity; composite membranes like Ce{sub 0.8}Gd{sub 0.2}O{sub 2-{delta}} (CGO)-CoFe{sub 2}O{sub 4} (CFO) use gadolinium doped ceria oxides as the ionic conducting material combined with cobalt iron spinel which serves as the electronic conductor. In this study we employ {approx} 50 nm sputtered CeO{sub 2} layers on the surface of porous CGO ceramic substrates which serve as solution 'blocking' layers during the thin film fabrication process facilitating the control of film thickness. Films with thickness of {approx} 2 and 4 microns were prepared by depositing 40 and 95 separate sol-gel layers respectively. Oxygen flux measurements indicated that the permeation increased with decreasing membrane thickness; thin film membrane with thickness on the micron level showed flux values an order of magnitude greater (0.03 {micro}mol/cm{sup 2} s) at 800 C as compared to 1mm thick bulk ceramic membranes (0.003 {micro}mol/cm{sup 2}).

STRUCTURAL, PHOTO-FUNCTIONAL AND SEMICONDUCTOR PROPERTIES OF COPPER OXIDE THIN FILMS PREPARED BY DC REACTIVE METHOD UNDER VARIOUS THICKNESSES Anmar H. Shukur

Directory of Open Access Journals (Sweden)

Anmar H. Shukur

2018-01-01

Full Text Available Cuprous oxide (Cu2O has been formed on glass substrates by dc reactive magnetron sputtering method, whereas pure target of the solid copper was sputtered with a mixture of plasma for argon gas and oxygen gas was used to form these films. Under vacuum chamber pressure of 1.2×10-5 Pa, thin film thickness was changed from 100 nm to 300 nm while other deposition parameters were fixed. The influence of changing the thickness of thin films on the electrical and the optical properties was investigated in this study. X-ray photoelectron spectroscopy (XPS, X-ray Diffractions system XRD, Atomic Force Microscopy (AFM, hall effect measurement system, UV–VIS spectrophotometer were employed to determine the characteristic of the deposited thin films. Thin film of 200 nm has observed low resistivity of 60.63 Ω cm and direct band gap of 2.5eV. This study has demonstrated that the thickness has direct influence on electrical and optical properties.

Thickness optimization of the ZnO based TCO layer in a CZTSSe solar cell. Evolution of its performance with thickness when external temperature changes.

Science.gov (United States)

Chadel, Meriem; Moustafa Bouzaki, Mohammed; Chadel, Asma; Aillerie, Michel; Benyoucef, Boumediene

2017-07-01

The influence of the thickness of a Zinc Oxide (ZnO) transparent conductive oxide (TCO) layer on the performance of the CZTSSe solar cell is shown in detail. In a photovoltaic cell, the thickness of each layer largely influence the performance of the solar cell and optimization of each layer constitutes a complete work. Here, using the Solar Cell Capacitance Simulation (SCAPS) software, we present simulation results obtained in the analyze of the influence of the TCO layer thickness on the performance of a CZTSSe solar cell, starting from performance of a CZTSSe solar cell commercialized in 2014 with an initial efficiency equal to 12.6%. In simulation, the temperature was considered as a functioning parameter and the evolution of tthe performance of the cell for various thickness of the TCO layer when the external temperature changes is simulated and discussed. The best efficiency of the solar cell based in CZTSSe is obtained with a ZnO thickness equal to 50 nm and low temperature. Based on the considered marketed cell, we show a technological possible increase of the global efficiency achieving 13% by optimization of ZnO based TCO layer.

Indium-Nitrogen Codoped Zinc Oxide Thin Film Deposited by Ultrasonic Spray Pyrolysis on n-(111 Si Substrate: The Effect of Film Thickness

Directory of Open Access Journals (Sweden)

Cheng-Chang Yu

2014-01-01

Full Text Available Indium-nitrogen codoped zinc oxide (INZO thin films were fabricated by spray pyrolysis deposition technique on n-(111 Si substrate with different film thicknesses at 450°C using a precursor containing zinc acetate, ammonium acetate, and indium nitrate with 1 : 3 : 0.05 at.% concentration. The morphology and structure studies were carried out by scanning electron microscopy (SEM and X-ray diffraction (XRD. The grain size of the films increased when increasing the film thickness. From XRD spectra, polycrystalline ZnO structure can be observed and the preferred orientation behavior varied from (002 to (101 as the film thickness increased. The concentration and mobility were investigated by Hall effect measurement. the p-type films with a hole mobility around 3 cm2V−1s−1 and hole concentration around 3×1019 cm−3 can be achieved with film thickness less than 385 nm. The n-type conduction with concentration 1×1020 cm−3 is observed for film with thickness 1089 nm. The defect states were characterized by photoluminescence. With temperature-dependent conductivity analysis, acceptor state with activation energy 0.139 eV dominate the p type conduction for thin INZO film. And the Zn-related shallow donors with activation energy 0.029 eV dominate the n-type conduction for the thick INZO film.

Determination of the thickness of Al2O3 barriers in magnetic tunnel junctions

International Nuclear Information System (INIS)

Buchanan, J.D.R.; Hase, T.P.A.; Tanner, B.K.; Hughes, N.D.; Hicken, R.J.

2002-01-01

The barrier thickness in magnetic spin-dependent tunnel junctions with Al 2 O 3 barriers has been measured using grazing incidence x-ray reflectivity and by fitting the tunneling current to the Simmons model. We have studied the effect of glow discharge oxidation time on the barrier structure, revealing a substantial increase in Al 2 O 3 thickness with oxidation. The greater thickness of barrier measured using grazing incidence x-ray reflectivity compared with that obtained by fitting current density-voltage to the Simmons electron tunneling model suggests that electron tunneling is localized to specific regions across the barrier, where the thickness is reduced by fluctuations due to nonconformal roughness

Limits to the adherence of oxide scales

International Nuclear Information System (INIS)

Robertson, J.; Manning, M.I.

1989-10-01

Fracture mechanics is used to identify criteria under which uniform oxide scales may be expected to fail due to rapidly applied strains. The most common failure mode occurs when the strain, ε, builds up in the scale until the strain energy density per unit area exceeds the fracture surface energy, γ, of the oxide. This produces spalling when ε > (2γ/hE) 1/2 , where h is the scale thickness and E is the oxide Youngs modulus. In thin scales, as the external strain is applied to the oxide via the metal substrate, it is clear that no further strain can be applied to the oxide if the substrate has itself been strained beyond yield. This gives rise to extended oxide adherence in which the oxide cracks and forms a series of islands but remains attached to the deformed metal. When the oxide thickness is less than its comminution limit, the flaw size necessary for brittle fracture exceeds the oxide thickness and the oxide yields in a ductile manner without cracking. The results are presented as maps of failure strain versus oxide thickness for various oxide systems such as Fe 3 O 4 , Cr 2 O 3 , Al 2 O 3 , SiO 2 and NiO. The observed cases of spalling are found to lie within the predicted regions. (author)

Extraordinary optical transmission through nonlocal holey metal films

DEFF Research Database (Denmark)

David, Christin; Christensen, Johan

2017-01-01

We investigate nonlocal electrodynamics based on the generalized hydrodynamic approach including electron diffusion in holey gold films, showing extraordinary optical transmission (EOT). Dramatic changes with respect to the local approximation for rather large film thicknesses t less than...... or similar to 100 nm impact both reflectance and absorbance at normal incidence. Beyond the familiar resonance blueshift with the decreasing film thickness, the interference of longitudinal pressure waves in the holey structure generates an unexpected oscillatory response with geometrical parameters...

Aluminum cladding oxidation of prefilmed in-pile fueled experiments

Energy Technology Data Exchange (ETDEWEB)

Marcum, W.R., E-mail: marcumw@engr.orst.edu [Oregon State University, School of Nuclear Science and Engineering, 116 Radiation Center, Corvallis, OR 97331 (United States); Wachs, D.M.; Robinson, A.B.; Lillo, M.A. [Idaho National Laboratory, Nuclear Fuels & Materials Department, 2525 Fremont Ave., Idaho Falls, ID 83415 (United States)

2016-04-01

A series of fueled irradiation experiments were recently completed within the Advanced Test Reactor Full size plate In center flux trap Position (AFIP) and Gas Test Loop (GTL) campaigns. The conduct of the AFIP experiments supports ongoing efforts within the global threat reduction initiative (GTRI) to qualify a new ultra-high loading density low enriched uranium-molybdenum fuel. This study details the characterization of oxide growth on the fueled AFIP experiments and cross-correlates the empirically measured oxide thickness values to existing oxide growth correlations and convective heat transfer correlations that have traditionally been utilized for such an application. This study adds new and valuable empirical data to the scientific community with respect to oxide growth measurements of highly irradiated experiments, of which there is presently very limited data. Additionally, the predicted oxide thickness values are reconstructed to produce an oxide thickness distribution across the length of each fueled experiment (a new application and presentation of information that has not previously been obtainable in open literature); the predicted distributions are compared against experimental data and in general agree well with the exception of select outliers. - Highlights: • New experimental data is presented on oxide layer thickness of irradiated aluminum fuel. • Five oxide growth correlations and four convective heat transfer correlations are used to compute the oxide layer thickness. • The oxide layer thickness distribution is predicted via correlation for each respective experiment. • The measured experiment and predicted distributions correlate well, with few outliers.

Magnetic properties and microstructure investigation of electrodeposited FeNi/ITO films with different thickness

International Nuclear Information System (INIS)

Cao, Derang; Wang, Zhenkun; Feng, Erxi; Wei, Jinwu; Wang, Jianbo; Liu, Qingfang

2013-01-01

Highlights: •FeNi alloy thin films with different thickness deposited on Indium Tin Oxides (ITOs) conductive glass substrates by electrodeposition method. •A columnar crystalline microstructure and domain structure were obtained in FeNi thin films. •Particular FMR spectra of FeNi alloy with different thickness were studied. -- Abstract: FeNi alloy thin films with different thickness deposited on Indium Tin Oxides (ITOs) conductive glass substrates from the electrolytes by electrodeposition method have been studied by magnetic force microscopy (MFM), scanning electron microscopy (SEM) and ferromagnetic resonance (FMR) technique. For these films possessing an in-plane isotropy, the remanence decreases with the increasing of film thickness and the critical thickness that a stripe domain structure emerges is about 116 nm. Characteristic differences of the FMR spectra of different thickness are also observed. The results show that the resonance field at high measured angle increases firstly then decreases with increasing thickness, which may be related to the striped domain structure

Solid-state dewetting of single- and bilayer Au-W thin films: Unraveling the role of individual layer thickness, stacking sequence and oxidation on morphology evolution

Directory of Open Access Journals (Sweden)

A. Herz

2016-03-01

Full Text Available Self-assembly of ultrathin Au, W, and Au-W bilayer thin films is investigated using a rapid thermal annealing technique in an inert ambient. The solid-state dewetting of Au films is briefly revisited in order to emphasize the role of initial film thickness. W films deposited onto SiO2 evolve into needle-like nanocrystals rather than forming particle-like agglomerates upon annealing at elevated temperatures. Transmission electron microscopy reveals that such nanocrystals actually consist of tungsten (VI oxide (WO3 which is related to an anisotropic oxide crystal growth out of the thin film. The evolution of W films is highly sensitive to the presence of any residual oxygen. Combination of both the dewetting of Au and the oxide crystal growth of WO3 is realized by using various bilayer film configurations of the immiscible Au and W. At low temperature, Au dewetting is initiated while oxide crystal growth is still suppressed. Depending on the stacking sequence of the Au-W bilayer thin film, W acts either as a substrate or as a passivation layer for the dewetting of Au. Being the ground layer, W changes the wettability of Au which clearly modifies its initial state for the dewetting. Being the top layer, W prevents Au from dewetting regardless of Au film thickness. Moreover, regular pattern formation of Au-WO3 nanoparticles is observed at high temperature demonstrating how bilayer thin film dewetting can create unique nanostructure arrangements.

Solid-state dewetting of single- and bilayer Au-W thin films: Unraveling the role of individual layer thickness, stacking sequence and oxidation on morphology evolution

Energy Technology Data Exchange (ETDEWEB)

Herz, A., E-mail: andreas.herz@tu-ilmenau.de, E-mail: dong.wang@tu-ilmenau.de; Franz, A.; Theska, F.; Hentschel, M.; Kups, Th.; Wang, D., E-mail: andreas.herz@tu-ilmenau.de, E-mail: dong.wang@tu-ilmenau.de; Schaaf, P. [Department of Materials for Electronics and Electrical Engineering, Institute of Materials Science and Engineering and Institute of Micro- and Nanotechnologies MacroNano, TU Ilmenau, D-98693 Ilmenau (Germany)

2016-03-15

Self-assembly of ultrathin Au, W, and Au-W bilayer thin films is investigated using a rapid thermal annealing technique in an inert ambient. The solid-state dewetting of Au films is briefly revisited in order to emphasize the role of initial film thickness. W films deposited onto SiO{sub 2} evolve into needle-like nanocrystals rather than forming particle-like agglomerates upon annealing at elevated temperatures. Transmission electron microscopy reveals that such nanocrystals actually consist of tungsten (VI) oxide (WO{sub 3}) which is related to an anisotropic oxide crystal growth out of the thin film. The evolution of W films is highly sensitive to the presence of any residual oxygen. Combination of both the dewetting of Au and the oxide crystal growth of WO{sub 3} is realized by using various bilayer film configurations of the immiscible Au and W. At low temperature, Au dewetting is initiated while oxide crystal growth is still suppressed. Depending on the stacking sequence of the Au-W bilayer thin film, W acts either as a substrate or as a passivation layer for the dewetting of Au. Being the ground layer, W changes the wettability of Au which clearly modifies its initial state for the dewetting. Being the top layer, W prevents Au from dewetting regardless of Au film thickness. Moreover, regular pattern formation of Au-WO{sub 3} nanoparticles is observed at high temperature demonstrating how bilayer thin film dewetting can create unique nanostructure arrangements.

Formation of thick stratiform Fe-Ti oxide layers in layered intrusion and frequent replenishment of fractionated mafic magma: Evidence from the Panzhihua intrusion, SW China

Science.gov (United States)

Song, Xie-Yan; Qi, Hua-Wen; Hu, Rui-Zhong; Chen, Lie-Meng; Yu, Song-Yue; Zhang, Jia-Fei

2013-03-01

Panzhihua intrusion is one of the largest layered intrusions that hosts huge stratiform Fe-Ti oxide layers in the central part of the Emeishan large igneous province, SW China. Up to 60 m thick stratiform massive Fe-Ti oxide layers containing 85 modal% of magnetite and ilmenite and overlying magnetite gabbro compose cyclic units of the Lower Zone of the intrusion. The cyclic units of the Middle Zone consist of magnetite gabbro and overlying gabbro. In these cyclic units, contents of Fe2O3(t), TiO2 and Cr and Fe3+/Ti4+ ratio of the rocks decrease upward, Cr content of magnetite and forsterite percentage of olivine decrease as well. The Upper Zone consists of apatite gabbro characterized by enrichment of incompatible elements (e.g., 12-18 ppm La, 20-28 ppm Y) and increasing of Fe3+/Ti4+ ratio (from 1.3 to 2.3) upward. These features indicate that the Panzhihua intrusion was repeatedly recharged by more primitive magma and evolved magmas had been extracted. Calculations using MELTS indicate that extensive fractionation of olivine and clinopyroxene in deep level resulted in increasing Fe and Ti contents in the magma. When these Fe-Ti-enriched magmas were emplaced along the base of the Panzhihua intrusion, Fe-Ti oxides became an early crystallization phase, leading to a residual magma of lower density. We propose that the unusually thick stratiform Fe-Ti oxide layers resulted from coupling of gravity settling and sorting of the crystallized Fe-Ti oxides from Fe-Ti-enriched magmas and frequent magma replenishment along the floor of the magma chamber.

Densification of ∼5 nm-thick SiO{sub 2} layers by nitric acid oxidation

Energy Technology Data Exchange (ETDEWEB)

Choi, Jaeyoung [Department of Energy Engineering, Dankook University, Cheonan 311-16 (Korea, Republic of); Joo, Soyeong [Institute for Advanced Engineering (IAE), Advanced Materials & Processing Center, Youngin 449-863 (Korea, Republic of); Park, Tae Joo [Department of Materials Science and Chemical Engineering, Hanyang University, Ansan 15588 (Korea, Republic of); Kim, Woo-Byoung, E-mail: woo7838@dankook.ac.kr [Department of Energy Engineering, Dankook University, Cheonan 311-16 (Korea, Republic of)

2017-08-15

Highlights: • Leakage current density of the commercial PECVD grown ∼5 nm SiO{sub 2} layer has been decreased about three orders of magnitude by densification. • The densification of SiO{sub 2} layer is achieved by high oxidation ability of O·. • Densities of suboxide, fixed charge (N{sub f}) and defect state (N{sub d}) in SiO{sub 2}/Si interface are decreased by NAOS and PMA. • Tunneling barrier height (Φ{sub t}) is increased because of the increase of atomic density in SiO{sub 2} layer. - Abstract: Low-temperature nitric acid (HNO{sub 3}) oxidation of Si (NAOS) has been used to improve the interface and electrical properties of ∼5 nm-thick SiO{sub 2}/Si layers produced by plasma-enhanced chemical vapor deposition (PECVD). Investigations of the physical properties and electrical characteristics of these thin films revealed that although their thickness is not changed by NAOS, the leakage current density at a gate bias voltage of −1 V decreases by about two orders of magnitude from 1.868 × 10{sup −5} A/cm{sup 2}. This leakage current density was further reduced by post-metallization annealing (PMA) at 250 °C for 10 min in a 5 vol.% hydrogen atmosphere, eventually reaching a level (5.2 × 10{sup −8} A/cm{sup 2}) approximately three orders of magnitude less than the as-grown SiO{sub 2} layer. This improvement is attributed to a decrease in the concentration of suboxide species (Si{sup 1+}, Si{sup 2+} and Si{sup 3+}) in the SiO{sub 2}/Si interface, as well as a decrease in the equilibrium density of defect sites (N{sub d}) and fixed charge density (N{sub f}). The barrier height (Φ{sub t}) generated by a Poole-Frenkel mechanism also increased from 0.205 to 0.371 eV after NAOS and PMA. The decrease in leakage current density is therefore attributed to a densification of the SiO{sub 2} layer in combination with the removal of OH species and increase in interfacial properties at the SiO{sub 2}/Si interface.

Thermal Oxidation of Structured Silicon Dioxide

DEFF Research Database (Denmark)

Christiansen, Thomas Lehrmann; Hansen, Ole; Jensen, Jørgen Arendt

2014-01-01

The topography of thermally oxidized, structured silicon dioxide is investigated through simulations, atomic force microscopy, and a proposed analytical model. A 357 nm thick oxide is structured by removing regions of the oxide in a masked etch with either reactive ion etching or hydrofluoric acid....... Subsequent thermal oxidation is performed in both dry and wet ambients in the temperature range 950◦C to 1100◦C growing a 205 ± 12 nm thick oxide in the etched mask windows. Lifting of the original oxide near the edge of the mask in the range 6 nm to 37 nm is seen with increased lifting for increasing...

Effect of interfacial oxide thickness on the photocatalytic activity of magnetron-sputtered TiO2coatings on aluminum substrate

DEFF Research Database (Denmark)

Daviðsdóttir, Svava; Petit, Jean-Pierre; Shabadi, Rajashekhara

2015-01-01

The influence of the coating/substrate interface on the photocatalytic behavior of Al-TiO2 coatings was investigated. The TiO2 coatings were prepared by magnetron sputtering. The nanoscale structure of the coating was analyzed using X-ray diffraction; atomic force microscopy; scanning electron...... transport between the coating and the metallic substrate. The highest photocurrents were indeed obtained when the thickness of interfacial aluminum oxide could be reduced by sputtering a thin Ti layer prior to TiO2 coating. Photocurrent plotted for different photon energy for a TiO2 coating on a Ti...

Improvement in the Sensitivity of PbO Doped Tin Oxide Thick Film Gas Sensor by RF and Microwave Oxygen Plasma Treatment

Directory of Open Access Journals (Sweden)

J. K. SRIVASTAVA

2010-07-01

Full Text Available In the present work efforts have been made to analyze the effect of oxygen plasma and PbO doping on the sensitivity of SnO2-based thick film gas sensor for methanol, propanol and acetone. The effect of substrate temperature on the response of dual frequency (RF and microwave plasma treated thick film sensor array has also been studied. To achieve this, three sensor arrays (each with four tin oxide sensors doped with different (1 %, 2 %, 3 % and 4 % PbO concentrations were fabricated by thick film technology and then treated with oxygen plasma for various durations (5 min, 10 min. and 15 min.. The plasma treated sensors were found to possess appreciably high sensitivity at room temperature in comparison to untreated sensor. The sensitivity showed the increasing trend with plasma exposure time and 15 minutes exposure time was found to be most suitable as the sensitivity of the plasma treated sensors for this duration were high towards all the chosen vapors with maximum (97 % value for propanol. The sensitivity of the sensors were found to be increasing gradually as PbO concentration was varied from 1- 4%.

The Thickness Dependence of Optical Constants of Ultrathin Iron Films

International Nuclear Information System (INIS)

Gao Shang; Lian Jie; Wang Xiao; Li Ping; Sun Xiao-Fen; Li Qing-Hao

2013-01-01

Ultrathin iron films with different thicknesses from 7.1 to 51.7 nm are deposited by magnetron sputtering and covered by tantalum layers protecting them from being oxidized. These ultrathin iron films are studied by spectroscopic ellipsometry and transmittance measurement. An extra tantalum film is deposited under the same sputtering conditions and its optical constants and film thickness are obtained by a combination of ellipsometry and transmission measurement. After introducing these obtained optical constants and film thickness into the tantalum-iron film, the optical constants and film thicknesses of ultrathin iron films with different thicknesses are obtained. The results show that combining ellipsometry and transmission measurement improves the uniqueness of the obtained film thickness. The optical constants of ultrathin iron films depend strongly on film thicknesses. There is a broad absorption peak at about 370 nm and it shifts to 410 nm with film thickness decreasing

CMOS integration of high-k/metal gate transistors in diffusion and gate replacement (D&GR) scheme for dynamic random access memory peripheral circuits

Science.gov (United States)

Dentoni Litta, Eugenio; Ritzenthaler, Romain; Schram, Tom; Spessot, Alessio; O’Sullivan, Barry; Machkaoutsan, Vladimir; Fazan, Pierre; Ji, Yunhyuck; Mannaert, Geert; Lorant, Christophe; Sebaai, Farid; Thiam, Arame; Ercken, Monique; Demuynck, Steven; Horiguchi, Naoto

2018-04-01

Integration of high-k/metal gate stacks in peripheral transistors is a major candidate to ensure continued scaling of dynamic random access memory (DRAM) technology. In this paper, the CMOS integration of diffusion and gate replacement (D&GR) high-k/metal gate stacks is investigated, evaluating four different approaches for the critical patterning step of removing the N-type field effect transistor (NFET) effective work function (eWF) shifter stack from the P-type field effect transistor (PFET) area. The effect of plasma exposure during the patterning step is investigated in detail and found to have a strong impact on threshold voltage tunability. A CMOS integration scheme based on an experimental wet-compatible photoresist is developed and the fulfillment of the main device metrics [equivalent oxide thickness (EOT), eWF, gate leakage current density, on/off currents, short channel control] is demonstrated.

Magnetron sputtered zinc oxide nanorods as thickness-insensitive cathode interlayer for perovskite planar-heterojunction solar cells.

Science.gov (United States)

Liang, Lusheng; Huang, Zhifeng; Cai, Longhua; Chen, Weizhong; Wang, Baozeng; Chen, Kaiwu; Bai, Hua; Tian, Qingyong; Fan, Bin

2014-12-10

Suitable electrode interfacial layers are essential to the high performance of perovskite planar heterojunction solar cells. In this letter, we report magnetron sputtered zinc oxide (ZnO) film as the cathode interlayer for methylammonium lead iodide (CH3NH3PbI3) perovskite solar cell. Scanning electron microscopy and X-ray diffraction analysis demonstrate that the sputtered ZnO films consist of c-axis aligned nanorods. The solar cells based on this ZnO cathode interlayer showed high short circuit current and power conversion efficiency. Besides, the performance of the device is insensitive to the thickness of ZnO cathode interlayer. Considering the high reliability and maturity of sputtering technique both in lab and industry, we believe that the sputtered ZnO films are promising cathode interlayers for perovskite solar cells, especially in large-scale production.

Thickness-dependent resistance switching in Cr-doped SrTiO3

Science.gov (United States)

Kim, TaeKwang; Du, Hyewon; Kim, Minchang; Seo, Sunae; Hwang, Inrok; Kim, Yeonsoo; Jeon, Jihoon; Lee, Sangik; Park, Baeho

2012-09-01

The thickness-dependent bipolar resistance-switching behavior was investigated for epitaxiallygrown Cr-doped SrTiO3 (Cr-STO). All the pristine devices of different thickness showed polarity-independent symmetric current-voltage characteristic and the same space-charge-limited conduction mechanism. However, after a forming process, the resultant conduction and switching phenomena were significantly different depending on the thickness of Cr-STO. The forming process itself was highly influenced by resistance value of each pristine device. Based on our results, we suggest that the resistance-switching mechanism in Cr-STO depends not only on the insulating material's composition or the contact metal as previously reported but also on the initial resistance level determined by the geometry and the quality of the insulating material. The bipolar resistance-switching behaviors in oxide materials of different thicknesses exhibit mixed bulk and interface switching. This indicates that efforts in resistance-based memory research should be focused on scalability or process method to control a given oxide material in addition to material type and device structure.

Influence of Thickness on Ethanol Sensing Characteristics of Doctor-bladed Thick Film from Flame-made ZnO Nanoparticles

Directory of Open Access Journals (Sweden)

Sukon Phanichphant

2007-02-01

Full Text Available ZnO nanoparticles were produced by flame spray pyrolysis (FSP using zincnaphthenate as a precursor dissolved in toluene/acetonitrile (80/20 vol%. The particleproperties were analyzed by XRD, BET, and HR-TEM. The sensing films were produced bymixing the particles into an organic paste composed of terpineol and ethyl cellulose as avehicle binder and were fabricated by doctor-blade technique with various thicknesses (5,10, 15 μm. The morphology of the sensing films was analyzed by SEM and EDS analyses.The gas sensing characteristics to ethanol (25-250 ppm were evaluated as a function of filmthickness at 400°C in dry air. The relationship between thickness and ethanol sensingcharacteristics of ZnO thick film on Al2O3 substrate interdigitated with Au electrodes wereinvestigated. The effects of film thickness, as well as the cracking phenomenon, though,many cracks were observed for thicker sensing films. Crack widths increased withincreasing film thickness. The film thickness, cracking and ethanol concentration havesignificant effect on the sensing characteristics. The sensing characteristics with variousthicknesses were compared, showing the tendency of the sensitivity to ethanol decreasedwith increasing film thickness and response time. The relationship between gas sensingproperties and film thickness was discussed on the basis of diffusively and reactivity of thegases inside the oxide films. The thinnest sensing film (5 μm showed the highest sensitivityand the fastest response time (within seconds.

Development and characterization of ultrathin hafnium titanates as high permittivity gate insulators

Science.gov (United States)

Li, Min

High permittivity or high-kappa materials are being developed for use as gate insulators for future ultrascaled metal oxide semiconductor field effect transistors (MOSFETs). Hafnium containing compounds are the leading candidates. Due to its moderate permittivity, however, it is difficult to achieve HfO2 gate structures with an EOT well below 1.0 nm. One approach to increase HfO2 permittivity is combining it with a very high-kappa material, such as TiO2. In this thesis, we systematically studied the electrical and physical characteristics of high-kappa hafnium titanates films as gate insulators. A series of HfxTi1-xO2 films with well-controlled composition were deposited using an MOCVD system. The physical properties of the films were analyzed using a variety of characterization techniques. X-ray micro diffraction indicates that the Ti-rich thin film is more immune to crystallization. TEM analysis showed that the thick stoichiometric HfTiO 4 film has an orthorhombic structure and large anisotropic grains. The C-V curves from the devices with the hafnium titanates films displayed relatively low hysteresis. In a certain composition range, the interfacial layer (IL) EOT and permittivity of HfxTi1-x O2 increases linearly with increasing Ti. The charge is negative for HfxTi1-xO2/IL and positive for Si/IL interface, and the magnitude increases as Hf increases. For ultra-thin films (less than 2 nm EOT), the leakage current increases with increasing HE Moreover, the Hf-rich sample has weaker temperature dependence of the current. In the MOSFET devices with the hafnium titanates films, normal transistor characteristics were observed, also electron mobility degradation. Next, we investigated the effects that different pre-deposition surface treatments, including HF dipping, NH3 surface nitridation, and HfO2 deposition, have on the electrical properties of hafnium titanates. Surface nitridation shows stronger effect than the thin HfO2 layer. The nitrided samples displayed a

The initial oxidation of magnesium

Energy Technology Data Exchange (ETDEWEB)

Kurth, M.

2004-07-01

Pure Magnesium samples have been oxidised in an UHV chamber under controlled conditions. Pressure range was 10{sup -10} Torr to 10{sup -7} Torr, temperature range was 273 K to 435 K. The samples have then been investigated with XPS, Ellipsometry and HERDA. Additionally, furnace oxidations at 750 Torr and 673 K have been carried out and investigated with XPS. From the XPS measurements data concerning layer thickness, composition, oxidation state and binding state have been gained. The ellipsometrie measurements yielded additional data concerning layer thickness as well as the size of the band gap of the developing oxide. With the HERDA measurements, the oxygen content within the oxide layer has been determined yielding additional information about composition and layer thickness. The layer thickness as a function of time have then been modelled with a kinetic growth model of Fromhold and Cook. For the refinement of the XPS data concerning layer thickness and composition, the pronounced plasmon excitations that occur in magnesium have been determined with two different procedures which have been developed in the methodical part of this work. The layer thickness and composition values have thus been corrected. Results: Two oxidation stages could be identified: a strong increase for the first few Langmuirs (1L = 1s x 10{sup -6} Torr), followed by a saturation'' region which was about 1.2 nm to 1.5 nm in magnitude. XPS and ellipsometry results have thereby been in very good agreement. The composition of the developing oxide showed a clear deviation from stoichiometric MgO, mainly caused by an oxygen deficiency; this deficiency has also been confirmed with the HERDA measurements. The Mg/O ratio as a function of layer thickness showed a continous decay starting from very high values for the thinnest layers (>{proportional_to}2.5) down to a saturation value of about 1.4, even for larger layer thicknesses gained with the furnace oxidations. The determination of

Effect of the thickness and hydrogen treatment on the properties of Ga-doped ZnO transparent conductive films

International Nuclear Information System (INIS)

Lee, Min-Jung; Lim, Jinhyong; Bang, Jungsik; Lee, Woong; Myoung, Jae-Min

2008-01-01

Combined effects of the thickness and hydrogen post-annealing treatment on the structural, electrical, and optical properties of Ga-doped ZnO (GZO) films were investigated as a potential substitute for indium tin oxide transparent conductive oxide. In the as-deposited films, microstructural evolution initially improved the crystallinity up to the thickness of 160 nm accompanying enhanced electrical and optical properties, but further thickness increase resulted in the deterioration of these properties attributable to the development of ZnGa 2 O 4 and Ga 2 O 3 phases originating from the excessive amount of the Ga dopant. Post-annealing treatment of the GZO films in a hydrogen atmosphere improved the electrical and optical properties substantially through possible reduction of the oxide phases and passivation of the surfaces and grain boundaries. In this case, electrical and optical properties remained almost similar for the thickness above 160 nm indicating that there exists a certain optimal film thickness.

Enhanced energy storage and suppressed dielectric loss in oxide core-shell-polyolefin nanocomposites by moderating internal surface area and increasing shell thickness

Energy Technology Data Exchange (ETDEWEB)

Fredin, Lisa A.; Li, Zhong; Ratner, Mark A.; Marks, Tobin J. [Department of Chemistry Northwestern University, 2145 Sheridan Road, Evanston, IL 60208 (United States); Lanagan, Michael T. [Center for Dielectric Studies, Materials Research Institute, The Pennsylvania State University, University Park, PA 16802-4800 (United States)

2012-11-20

Dielectric loss in metal oxide core/Al{sub 2}O{sub 3} shell polypropylene nanocomposites scales with the particle surface area. By moderating the interfacial surface area between the phases and using increasing shell thicknesses, dielectric loss is significantly reduced, and thus the energy stored within, and recoverable from, capacitors fabricated from these materials is significantly increased, to as high as 2.05 J/cm{sup 3}. (Copyright copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Effects of thickness and geometric variations in the oxide gate stack on the nonvolatile memory behaviors of charge-trap memory thin-film transistors

Science.gov (United States)

Bak, Jun Yong; Kim, So-Jung; Byun, Chun-Won; Pi, Jae-Eun; Ryu, Min-Ki; Hwang, Chi Sun; Yoon, Sung-Min

2015-09-01

Device designs of charge-trap oxide memory thin-film transistors (CTM-TFTs) were investigated to enhance their nonvolatile memory performances. The first strategy was to optimize the film thicknesses of the tunneling and charge-trap (CT) layers in order to meet requirements of both higher operation speed and longer retention time. While the program speed and memory window were improved for the device with a thinner tunneling layer, a long retention time was obtained only for the device with a tunneling layer thicker than 5 nm. The carrier concentration and charge-trap densities were optimized in the 30-nm-thick CT layer. It was observed that 10-nm-thick tunneling, 30-nm-thick CT, and 50-nm-thick blocking layers were the best configuration for our proposed CTM-TFTs, where a memory on/off margin higher than 107 was obtained, and a memory margin of 6.6 × 103 was retained even after the lapse of 105 s. The second strategy was to examine the effects of the geometrical relations between the CT and active layers for the applications of memory elements embedded in circuitries. The CTM-TFTs fabricated without an overlap between the CT layer and the drain electrode showed an enhanced program speed by the reduced parasitic capacitance. The drain-bias disturbance for the memory off-state was effectively suppressed even when a higher read-out drain voltage was applied. Appropriate device design parameters, such as the film thicknesses of each component layer and the geometrical relations between them, can improve the memory performances and expand the application fields of the proposed CTM-TFTs.

Gold Nanohole Array with Sub-1 nm Roughness by Annealing for Sensitivity Enhancement of Extraordinary Optical Transmission Biosensor

Science.gov (United States)

Zhang, Jian; Irannejad, Mehrdad; Yavuz, Mustafa; Cui, Bo

2015-05-01

Nanofabrication technology plays an important role in the performance of surface plasmonic devices such as extraordinary optical transmission (EOT) sensor. In this work, a double liftoff process was developed to fabricate a series of nanohole arrays of a hole diameter between 150 and 235 nm and a period of 500 nm in a 100-nm-thick gold film on a silica substrate. To improve the surface quality of the gold film, thermal annealing was conducted, by which an ultra-smooth gold film with root-mean-square (RMS) roughness of sub-1 nm was achieved, accompanied with a hole diameter shrinkage. The surface sensitivity of the nanohole arrays was measured using a monolayer of 16-mercaptohexadecanoic acid (16-MHA) molecule, and the surface sensitivity was increased by 2.5 to 3 times upon annealing the extraordinary optical transmission (EOT) sensor.

Influence of Nitinol wire surface treatment on oxide thickness and composition and its subsequent effect on corrosion resistance and nickel ion release.

Science.gov (United States)

Clarke, B; Carroll, W; Rochev, Y; Hynes, M; Bradley, D; Plumley, D

2006-10-01

Medical implants and devices are now used successfully in surgical procedures on a daily basis. Alloys of nickel and titanium, and in particular Nitinol are of special interest in the medical device industry, because of their shape memory and superelastic properties. The corrosion behavior of nitinol in the body is also of critical importance because of the known toxicological effects of nickel. The stability of a NiTi alloy in the physiological environment is dependant primarily on the properties of the mostly TiO(2) oxide layer that is present on the surface. For the present study, a range of nitinol wires have been prepared using different drawing processes and a range of surface preparation procedures. It is clear from the results obtained that the wire samples with very thick oxides also contain a high nickel content in the oxide layer. The untreated samples with the thicker oxides show the lowest pitting potential values and greater nickel release in both long and short-term experiments. It was also found that after long-term immersion tests breakdown potentials increased for samples that exhibited lower values initially. From these results it would appear that surface treatment is essential for the optimum bioperformance of nitinol. (c) 2006 Wiley Periodicals, Inc

Ultra-low power thin film transistors with gate oxide formed by nitric acid oxidation method

International Nuclear Information System (INIS)

Kobayashi, H.; Kim, W. B.; Matsumoto, T.

2011-01-01

We have developed a low temperature fabrication method of SiO 2 /Si structure by use of nitric acid, i.e., nitric acid oxidation of Si (NAOS) method, and applied it to thin film transistors (TFT). A silicon dioxide (SiO 2 ) layer formed by the NAOS method at room temperature possesses 1.8 nm thickness, and its leakage current density is as low as that of thermally grown SiO 2 layer with the same thickness formed at ∼900 deg C. The fabricated TFTs possess an ultra-thin NAOS SiO 2 /CVD SiO 2 stack gate dielectric structure. The ultrathin NAOS SiO 2 layer effectively blocks a gate leakage current, and thus, the thickness of the gate oxide layer can be decreased from 80 to 20 nm. The thin gate oxide layer enables to decrease the operation voltage to 2 V (cf. the conventional operation voltage of TFTs with 80 nm gate oxide: 12 V) because of the low threshold voltages, i.e., -0.5 V for P-ch TFTs and 0.5 V for N-ch TFTs, and thus the consumed power decreases to 1/36 of that of the conventional TFTs. The drain current increases rapidly with the gate voltage, and the sub-threshold voltage is ∼80 mV/dec. The low sub-threshold swing is attributable to the thin gate oxide thickness and low interface state density of the NAOS SiO 2 layer. (authors)

Thickness-dependence of optical constants for Ta2O5 ultrathin films

International Nuclear Information System (INIS)

Zhang, Dong-Xu; Zheng, Yu-Xiang; Cai, Qing-Yuan; Lin, Wei; Wu, Kang-Ning; Mao, Peng-Hui; Zhang, Rong-Jun; Zhao, Hai-bin; Chen, Liang-Yao

2012-01-01

An effective method for determining the optical constants of Ta 2 O 5 thin films deposited on crystal silicon (c-Si) using spectroscopic ellipsometry (SE) measurement with a two-film model (ambient-oxide-interlayer-substrate) was presented. Ta 2 O 5 thin films with thickness range of 1-400 nm have been prepared by the electron beam evaporation (EBE) method. We find that the refractive indices of Ta 2 O 5 ultrathin films less than 40 nm drop with the decreasing thickness, while the other ones are close to those of bulk Ta 2 O 5 . This phenomenon was due to the existence of an interfacial oxide region and the surface roughness of the film, which was confirmed by the measurement of atomic force microscopy (AFM). Optical properties of ultrathin film varying with the thickness are useful for the design and manufacture of nano-scaled thin-film devices. (orig.)

Thickness-dependence of optical constants for Ta2O5 ultrathin films

Science.gov (United States)

Zhang, Dong-Xu; Zheng, Yu-Xiang; Cai, Qing-Yuan; Lin, Wei; Wu, Kang-Ning; Mao, Peng-Hui; Zhang, Rong-Jun; Zhao, Hai-bin; Chen, Liang-Yao

2012-09-01

An effective method for determining the optical constants of Ta2O5 thin films deposited on crystal silicon (c-Si) using spectroscopic ellipsometry (SE) measurement with a two-film model (ambient-oxide-interlayer-substrate) was presented. Ta2O5 thin films with thickness range of 1-400 nm have been prepared by the electron beam evaporation (EBE) method. We find that the refractive indices of Ta2O5 ultrathin films less than 40 nm drop with the decreasing thickness, while the other ones are close to those of bulk Ta2O5. This phenomenon was due to the existence of an interfacial oxide region and the surface roughness of the film, which was confirmed by the measurement of atomic force microscopy (AFM). Optical properties of ultrathin film varying with the thickness are useful for the design and manufacture of nano-scaled thin-film devices.

24 h stability of thick multilayer silicene in air

International Nuclear Information System (INIS)

De Padova, Paola; Ottaviani, Carlo; Quaresima, Claudio; Generosi, Amanda; Paci, Barbara; Le Lay, Guy; Olivieri, Bruno; Imperatori, Patrizia; Salomon, Eric; Angot, Thierry; Quagliano, Lucia; Romano, Claudia; Vona, Alessandro; Muniz-Miranda, Maurizio

2014-01-01

Thick epitaxial multilayer silicene films with a √3 × √3R(30°) surface structure show only mild surface oxidation after 24 h in air, as measured by Auger electron spectroscopy. X-ray diffraction and Raman spectroscopy measurements performed in air without any protective capping, as well as, for comparison, with a thin Al 2 O 3 cap, showed the (002) reflection and the G, D and 2D Raman structures, which are unique fingerprints of thick multilayer silicene. (letter)

Are children participating in a quasi-experimental education outside the classroom intervention more physically active?

Directory of Open Access Journals (Sweden)

Mikkel Bo Schneller

2017-05-01

Full Text Available Abstract Background Education outside the classroom (EOtC is a curriculum-based approach to teaching that has shown positive associations with children’s physical activity and academic learning in small-scale case studies. The purpose of this large-scale quasi-experimental study was to determine if children who participate regularly in EOtC spend more time being physically active than children who do not. Methods In the 2014/2015 study TEACHOUT, classes were recruited in pairs such that each EOtC class had a non-EOtC comparison class at the same school and grade level. Participants in 17 EOtC classes and 16 comparison parallel classes across Denmark wore an Axivity AX3 accelerometer taped to the lower back for seven consecutive days. Data from 201 EOtC participants (63.3% girls, age 10.82 ± 1.05, and 160 comparison participants (59.3% girls, age 10.95 ± 1.01 were analysed using an ‘intention to treat’ (ITT approach. The amount of EOtC the participants were exposed to was monitored. Associations between time spent in different physical activity intensities and EOtC group and sex were assessed using generalised linear models adjusted for age. In a second analysis, we modified the sample using a ‘per protocol’ (PP approach, only including EOtC and comparison class pairs where the EOtC class had >150 min and the comparison had <150 min of EOtC during the measured week. Results On average, EOtC participants spent 8.4 (ITT and 9.2 (PP minutes more in moderate-to-vigorous physical activity (MVPA per day than comparison participants (p < 0.05. However, EOtC boys spent 18.7 (ITT and 20.8 (PP minutes more in MVPA per day than comparison boys (p < 0.01, while there were no significant between-group differences for girls. Conclusions For boys, EOtC was associated with more daily time being spent moderately and vigorously physically active. No differences were observed for girls. Implementing EOtC into schools’ weekly practice can be

Are children participating in a quasi-experimental education outside the classroom intervention more physically active?

Science.gov (United States)

Schneller, Mikkel Bo; Duncan, Scott; Schipperijn, Jasper; Nielsen, Glen; Mygind, Erik; Bentsen, Peter

2017-05-26

Education outside the classroom (EOtC) is a curriculum-based approach to teaching that has shown positive associations with children's physical activity and academic learning in small-scale case studies. The purpose of this large-scale quasi-experimental study was to determine if children who participate regularly in EOtC spend more time being physically active than children who do not. In the 2014/2015 study TEACHOUT, classes were recruited in pairs such that each EOtC class had a non-EOtC comparison class at the same school and grade level. Participants in 17 EOtC classes and 16 comparison parallel classes across Denmark wore an Axivity AX3 accelerometer taped to the lower back for seven consecutive days. Data from 201 EOtC participants (63.3% girls, age 10.82 ± 1.05,) and 160 comparison participants (59.3% girls, age 10.95 ± 1.01) were analysed using an 'intention to treat' (ITT) approach. The amount of EOtC the participants were exposed to was monitored. Associations between time spent in different physical activity intensities and EOtC group and sex were assessed using generalised linear models adjusted for age. In a second analysis, we modified the sample using a 'per protocol' (PP) approach, only including EOtC and comparison class pairs where the EOtC class had >150 min and the comparison had <150 min of EOtC during the measured week. On average, EOtC participants spent 8.4 (ITT) and 9.2 (PP) minutes more in moderate-to-vigorous physical activity (MVPA) per day than comparison participants (p < 0.05). However, EOtC boys spent 18.7 (ITT) and 20.8 (PP) minutes more in MVPA per day than comparison boys (p < 0.01), while there were no significant between-group differences for girls. For boys, EOtC was associated with more daily time being spent moderately and vigorously physically active. No differences were observed for girls. Implementing EOtC into schools' weekly practice can be a time- and cost-neutral, supplementary way to increase time spent

Weekly physical activity of children in an education outside the classroom intervention segmented into day types and domains

DEFF Research Database (Denmark)

Schneller, Mikkel Bo; Schipperijn, Jasper; Nielsen, Glen

Background: Implementation of education outside the classroom (EOtC) practice in a single or a few school classes has resulted in increased physical activity (PA) during school huors. As such, EOtC is a potential movement integration (MI) strategy within the traditional classroom school setting......-specific analysis. Mixed-effects regressions were used to test for associations between proportion of PA during different activities or day types. Results: The proportion of moderate-to-vigorous physical activity (MVPA) did not differ between school days with EOtC activities and school days without EOtC and PE....... Proportion of time spent in light physical activity (LPA) was higher school days with EOtC activities compares to on school days with no EOtC and PE activites (girls 2.4%, boys 2.1%). Boys spent 8.0% more of their time in MVPA during EOtC activities compared to classroom activities (no difference observed...

Effects of education outside the classroom on objectively measured physical activity

DEFF Research Database (Denmark)

Schneller, Mikkel Bo

days without EOtC and physical education (PE), but lower than on PE days. EOtC days were associated with more light physical activity (LPA) than school days without EOtC and PE, and PE days. Boys spent a higher proportion of time in MVPA and girls in LPA in the EOtC domain compared to the classroom...... the potential to transform part of children’s time from inactive to active. Curriculum-based classroom activities constitute a large proportion of school time, in which more teaching and learning activities involving PA could be implemented. Education outside the classroom (EOtC) is an example of an educational...... approach that could increase PA, as case studies have shown positive effects of EOtC on PA, academic learning motivation, well-being and social relations. National surveys in Denmark have shown substantial and increasing proportions of schools and teachers regularly practicing EOtC. When evaluating...

Are children participating in a quasi-experimental education outside the classroom intervention more physically active?

DEFF Research Database (Denmark)

Schneller, Mikkel Bo; Duncan, Scott; Schipperijn, Jasper

2017-01-01

to treat' (ITT) approach. The amount of EOtC the participants were exposed to was monitored. Associations between time spent in different physical activity intensities and EOtC group and sex were assessed using generalised linear models adjusted for age. In a second analysis, we modified the sample using......BACKGROUND: Education outside the classroom (EOtC) is a curriculum-based approach to teaching that has shown positive associations with children's physical activity and academic learning in small-scale case studies. The purpose of this large-scale quasi-experimental study was to determine...... if children who participate regularly in EOtC spend more time being physically active than children who do not. METHODS: In the 2014/2015 study TEACHOUT, classes were recruited in pairs such that each EOtC class had a non-EOtC comparison class at the same school and grade level. Participants in 17 EOt...

Thermal stability of BaSrO thin films and the influence of Al intermediate layers to the electrical properties of high-k Si(001)/BaSrO/Au MOS diodes

Energy Technology Data Exchange (ETDEWEB)

Islam, Shariful; Mueller-Sajak, Dirk; Pfnuer, Herbert [Leibniz-Universitaet Hannover, Inst. f. Festkoerperphysik (Germany); Cosceev, Alexander; Hofmann, Karl R. [Leibniz-Universitaet Hannover, Bauelemente der Mikro- und Nanoelektronik (Germany)

2011-07-01

MOS diodes with crystalline Ba{sub 0.7}Sr{sub 0.3}O gate oxide and Au gate metal on n- and p-Si(001) were produced, which have a dielectric constant of {epsilon}{sub r}{approx}28. The oxides were grown on structured Si(001) in a UHV chamber by MBE in oxygen ambient conditions and capped with 100nm Au for ex-situ electrical measurements. I-V measurements show low leakage currents compared to SiO{sub 2} with the same EOT. From C-V measurements we extracted with the Terman method a density of interface states, D{sub it}, of only {approx}10{sup 10}eV{sup -1}cm{sup -2}. We tested the thermal stability of these oxides and investigated them with X-Ray Photoelectron Spectroscopy (XPS). They are fully stable up to 450 C but convert to other chemical species, most likely silicates, at higher temperatures. But even at 700 C no formation of SiO{sub 2} at the interface to Si was detectable. To improve the adhesion between the Au gate metal and the oxide we evaporated a thin layer of Al at the Au/oxide interface. This causes a thickness dependent shift of the flatband voltage. We present our XPS measurements of the chemical origin of this shift.

Optimum thickness evaluation of ZrO2 coating on type 304L stainless steel for corrosion protection

International Nuclear Information System (INIS)

Garg, Nidhi; Bera, Santanu; Velmurugan, S.; Tripathi, V.S.; Karki, Vijay

2015-01-01

Nano-crystalline ZrO 2 coatings of different thickness have been grown on pre-oxidized stainless steel (SS) surface by hydrothermal method in an autoclave. Thickness of the coating has been enhanced by repeating the deposition process several times using same precursor concentration. Several cycles of the deposition process lead to the increase of the coating thickness from 200 nm to ∼1 μm after the fourth round of deposition. The samples after different rounds of the coating have been extensively characterized by SEM-EDS technique to find the surface topography, coating thickness and composition. Corrosion resistance properties of the plain SS, pre-oxidized SS and all the ZrO 2 coated samples were studied by potentiodynamic polarization technique and electrochemical impedance spectroscopy (EIS). Corrosion current densities (I corr /cm 2 ) of the coated samples are found to reduce significantly with the increase in thickness. After a certain critical thickness, the corrosion resistance properties found to deteriorate due to the formation of coating defects caused by lattice strain. The coating was found to be continuous but porous after the first cycle but porosity of zirconia coating have been reduced drastically after the second cycle itself. EIS analysis confirms that the zirconia coated samples show insulating, barrier like characteristics in terms of high charge transfer resistance after the second cycle of zirconia deposition. The role of pre-oxidized surface composition and the interface between the pre-oxidized surface and the coating has been discussed in details by showing the depth distribution of Zr in the coating. (author)

Excimer laser sintering of indium tin oxide nanoparticles for fabricating thin films of variable thickness on flexible substrates

International Nuclear Information System (INIS)

Park, Taesoon; Kim, Dongsik

2015-01-01

Technology to fabricate electrically-conducting, transparent thin-film patterns on flexible substrates has possible applications in flexible electronics. In this work, a pulsed-laser sintering process applicable to indium tin oxide (ITO) thin-film fabrication on a substrate without thermal damage to the substrate was developed. A nanosecond pulsed laser was used to minimize thermal penetration into the substrate and to control the thickness of the sintered layer. ITO nanoparticles (NPs) of ~ 20 nm diameter were used to lower the process temperature by exploiting their low melting point. ITO thin film patterns were fabricated by first spin coating the NPs onto a surface, then sintering them using a KrF excimer laser. The sintered films were characterized using field emission scanning electron microscopy. The electrical resistivity and transparency of the film were measured by varying the process parameters. A single laser pulse could generate the polycrystalline structure (average grain size ~ 200 nm), reducing the electrical resistivity of the film by a factor of ~ 1000. The sintering process led to a minimum resistivity of 1.1 × 10 −4 Ω·m without losing the transparency of the film. The thickness of the sintered layer could be varied up to 150 nm by adjusting the laser fluence. Because the estimated thermal penetration depth in the ITO film was less than 200 nm, no thermal damage was observed in the substrate. This work suggests that the proposed process, combined with various particle deposition methods, can be an effective tool to form thin-film ITO patterns on flexible substrates. - Highlights: • Excimer laser sintering can fabricate ITO thin films on flexible substrates. • The laser pulse can form a polycrystalline structure without thermal damage. • The laser sintering process can reduce the electrical resistivity substantially. • The thickness of the sintered layer can be varied effectively

Excimer laser sintering of indium tin oxide nanoparticles for fabricating thin films of variable thickness on flexible substrates

Energy Technology Data Exchange (ETDEWEB)

Park, Taesoon; Kim, Dongsik, E-mail: dskim87@postech.ac.kr

2015-03-02

Technology to fabricate electrically-conducting, transparent thin-film patterns on flexible substrates has possible applications in flexible electronics. In this work, a pulsed-laser sintering process applicable to indium tin oxide (ITO) thin-film fabrication on a substrate without thermal damage to the substrate was developed. A nanosecond pulsed laser was used to minimize thermal penetration into the substrate and to control the thickness of the sintered layer. ITO nanoparticles (NPs) of ~ 20 nm diameter were used to lower the process temperature by exploiting their low melting point. ITO thin film patterns were fabricated by first spin coating the NPs onto a surface, then sintering them using a KrF excimer laser. The sintered films were characterized using field emission scanning electron microscopy. The electrical resistivity and transparency of the film were measured by varying the process parameters. A single laser pulse could generate the polycrystalline structure (average grain size ~ 200 nm), reducing the electrical resistivity of the film by a factor of ~ 1000. The sintering process led to a minimum resistivity of 1.1 × 10{sup −4} Ω·m without losing the transparency of the film. The thickness of the sintered layer could be varied up to 150 nm by adjusting the laser fluence. Because the estimated thermal penetration depth in the ITO film was less than 200 nm, no thermal damage was observed in the substrate. This work suggests that the proposed process, combined with various particle deposition methods, can be an effective tool to form thin-film ITO patterns on flexible substrates. - Highlights: • Excimer laser sintering can fabricate ITO thin films on flexible substrates. • The laser pulse can form a polycrystalline structure without thermal damage. • The laser sintering process can reduce the electrical resistivity substantially. • The thickness of the sintered layer can be varied effectively.

Field Investigation of Steamside Oxidation for TP347H

DEFF Research Database (Denmark)

Montgomery, Melanie; Larsen, Ole Hede; Jensen, Søren Aakjær

2004-01-01

The steamside oxide formed on two TP347H superheater tubes was compared. The two specimens investigated were exposed in situ in power plants in Denmark, one specimen was coarse-grained and the other was fine-grained. Parts of both the coarse-grained and the fine-grained specimens were turned...... (machined on the inner side) to give a constant metal thickness so more precise wall thickness measurements could be undertaken. Machined and non-machined areas were investigated using light optical microscopy, and scanning electron microscopy with EDS analysis. The oxide on the fine-grained specimen...... was also investigated with grazing incidence X-ray diffraction. Results from coarse-grained and fine-grained specimens (machined and non-machined) show that grain size influenced oxide thickness and morphology. The oxides from non-machined specimens has an outer iron rich oxide and an inner iron chromium...

Ferroelectricity in undoped hafnium oxide

International Nuclear Information System (INIS)

Polakowski, Patrick; Müller, Johannes

2015-01-01

We report the observation of ferroelectric characteristics in undoped hafnium oxide thin films in a thickness range of 4–20 nm. The undoped films were fabricated using atomic layer deposition (ALD) and embedded into titanium nitride based metal-insulator-metal (MIM) capacitors for electrical evaluation. Structural as well as electrical evidence for the appearance of a ferroelectric phase in pure hafnium oxide was collected with respect to film thickness and thermal budget applied during titanium nitride electrode formation. Using grazing incidence X-Ray diffraction (GIXRD) analysis, we observed an enhanced suppression of the monoclinic phase fraction in favor of an orthorhombic, potentially, ferroelectric phase with decreasing thickness/grain size and for a titanium nitride electrode formation below crystallization temperature. The electrical presence of ferroelectricity was confirmed using polarization measurements. A remanent polarization P r of up to 10 μC cm −2 as well as a read/write endurance of 1.6 × 10 5 cycles was measured for the pure oxide. The experimental results reported here strongly support the intrinsic nature of the ferroelectric phase in hafnium oxide and expand its applicability beyond the doped systems

XPS studies of the oxide formed on pure Ti

International Nuclear Information System (INIS)

Cremery, P.; David, D.; Beranger, G.; Oviedo, C.; Garcia, E.A.

1980-01-01

The XPS technique was used to study titanium samples oxidized at 200 ton of pure oxigen at different times and temperatures with the aim of producing variable oxide thicknesses. The thicknesses of different oxigen layers were determined by the nuclear reaction O 16 (d,p) O 17 *. (author) [pt

Probing anodic oxidation kinetics and nanoscale heterogeneity within TiO2 films by Conductive Atomic Force Microscopy and combined techniques

International Nuclear Information System (INIS)

Diamanti, M.V.; Souier, T.; Stefancich, M.; Chiesa, M.; Pedeferri, M.P.

2014-01-01

Graphical abstract: - Highlights: • Nanoscale anodic titanium oxides were investigated with multidisciplinary approach. • Oxide thickness was estimated via spectrophotometry and coulometry. • C-AFM identified nanometric conductivity heterogeneities, ascribed to oxide structure. • High conductivity areas exhibited local memristive behavior. - Abstract: Anodic oxidation of titanium in acid electrolytes allows to obtain a thin, compact oxide layer with thickness, structure, color, and electrical properties that vary with process parameters imposed, among which cell voltage has a key effect. Although oxidation kinetics have been investigated in several research works, a broader vision of oxide properties–including thickness and structure–still has to be achieved, especially in the case of very thin oxide films, few tens of nanometers thick. This is vital for engineered applications of nanostructured TiO 2 films, as in the field of memristive devices, where a precise control of oxide thickness, composition and structure is required to tune its electrical response. In this work, oxide films were produced on titanium with thickness ranging from few nanometers to 200 nm. Oxide thickness was estimated by coulometry and spectrophotometry. These techniques were then combined with C-AFM, which provided a deeper understanding of oxide thickness and uniformity of the metal surface and probed the presence of crystalline nano-domains within the amorphous oxide phase affecting the overall film electrical and optical properties

Evolution of optical constants of silicon dioxide on silicon from ultrathin films to thick films

Energy Technology Data Exchange (ETDEWEB)

Cai Qingyuan; Zheng Yuxiang; Mao Penghui; Zhang Rongjun; Zhang Dongxu; Liu Minghui; Chen Liangyao, E-mail: yxzheng@fudan.edu.c [Key Laboratory of Micro and Nano Photonic Structures, Ministry of Education, Department of Optical Science and Engineering, Fudan University, Shanghai 200433 (China)

2010-11-10

A series of SiO{sub 2} films with thickness range 1-600 nm have been deposited on crystal silicon (c-Si) substrates by electron beam evaporation (EBE) method. Variable-angle spectroscopic ellipsometry (VASE) in combination with a two-film model (ambient-oxide-interlayer substrate) was used to determine the optical constants and thicknesses of the investigated films. The refractive indices of SiO{sub 2} films thicker than 60 nm are close to those of bulk SiO{sub 2}. For the thin films deposited at the rate of {approx}1.0 nm s{sup -1}, the refractive indices increase with decreasing thickness from {approx}60 to {approx}10 nm and then drop sharply with decreasing thickness below {approx}10 nm. However, for thin films deposited at the rates of {approx}0.4 and {approx}0.2 nm s{sup -1}, the refractive indices monotonically increase with decreasing thickness below 60 nm. The optical constants of the ultrathin film depend on the morphology of the film, the stress exerted on the film, as well as the stoichiometry of the oxide film.

Evolution of optical constants of silicon dioxide on silicon from ultrathin films to thick films

International Nuclear Information System (INIS)

Cai Qingyuan; Zheng Yuxiang; Mao Penghui; Zhang Rongjun; Zhang Dongxu; Liu Minghui; Chen Liangyao

2010-01-01

A series of SiO 2 films with thickness range 1-600 nm have been deposited on crystal silicon (c-Si) substrates by electron beam evaporation (EBE) method. Variable-angle spectroscopic ellipsometry (VASE) in combination with a two-film model (ambient-oxide-interlayer substrate) was used to determine the optical constants and thicknesses of the investigated films. The refractive indices of SiO 2 films thicker than 60 nm are close to those of bulk SiO 2 . For the thin films deposited at the rate of ∼1.0 nm s -1 , the refractive indices increase with decreasing thickness from ∼60 to ∼10 nm and then drop sharply with decreasing thickness below ∼10 nm. However, for thin films deposited at the rates of ∼0.4 and ∼0.2 nm s -1 , the refractive indices monotonically increase with decreasing thickness below 60 nm. The optical constants of the ultrathin film depend on the morphology of the film, the stress exerted on the film, as well as the stoichiometry of the oxide film.

Plasma electrolytic oxidation of Titanium Aluminides

International Nuclear Information System (INIS)

Morgenstern, R; Sieber, M; Lampke, T; Grund, T; Wielage, B

2016-01-01

Due to their outstanding specific mechanical and high-temperature properties, titanium aluminides exhibit a high potential for lightweight components exposed to high temperatures. However, their application is limited through their low wear resistance and the increasing high-temperature oxidation starting from about 750 °C. By the use of oxide ceramic coatings, these constraints can be set aside and the possible applications of titanium aluminides can be extended. The plasma electrolytic oxidation (PEO) represents a process for the generation of oxide ceramic conversion coatings with high thickness. The current work aims at the clarification of different electrolyte components’ influences on the oxide layer evolution on alloy TNM-B1 (Ti43.5Al4Nb1Mo0.1B) and the creation of compact and wear resistant coatings. Model experiments were applied using a ramp-wise increase of the anodic potential in order to show the influence of electrolyte components on the discharge initiation and the early stage of the oxide layer growth. The production of PEO layers with technically relevant thicknesses close to 100 μm was conducted in alkaline electrolytes with varying amounts of Na 2 SiO 3 ·5H 2 O and K 4 P 2 O 7 under symmetrically pulsed current conditions. Coating properties were evaluated with regard to morphology, chemical composition, hardness and wear resistance. The addition of phosphates and silicates leads to an increasing substrate passivation and the growth of compact oxide layers with higher thicknesses. Optimal electrolyte compositions for maximum coating hardness and thickness were identified by statistical analysis. Under these conditions, a homogeneous inner layer with low porosity can be achieved. The frictional wear behavior of the compact coating layer is superior to a hard anodized layer on aluminum. (paper)

Correlation between active layer thickness and ambient gas stability in IGZO thin-film transistors

International Nuclear Information System (INIS)

Gao, Xu; Mao, Bao-Hua; Wang, Sui-Dong; Lin, Meng-Fang; Shimizu, Maki; Mitoma, Nobuhiko; Kizu, Takio; Ou-Yang, Wei; Tsukagoshi, Kazuhito; Nabatame, Toshihide; Liu, Zhi

2017-01-01

Decreasing the active layer thickness has been recently reported as an alternative way to achieve fully depleted oxide thin-film transistors for the realization of low-voltage operations. However, the correlation between the active layer thickness and device resistivity to environmental changes is still unclear, which is important for the optimized design of oxide thin-film transistors. In this work, the ambient gas stability of IGZO thin-film transistors is found to be strongly correlated to the IGZO thickness. The TFT with the thinnest IGZO layer shows the highest intrinsic electron mobility in a vacuum, which is greatly reduced after exposure to O 2 /air. The device with a thick IGZO layer shows similar electron mobility in O 2 /air, whereas the mobility variation measured in the vacuum is absent. The thickness dependent ambient gas stability is attributed to a high-mobility region in the IGZO surface vicinity with less sputtering-induced damage, which will become electron depleted in O 2 /air due to the electron transfer to adsorbed gas molecules. The O 2 adsorption and deduced IGZO surface band bending is demonstrated by the ambient-pressure x-ray photoemission spectroscopy results. (paper)

Ultrathin Oxide Passivation Layer by Rapid Thermal Oxidation for the Silicon Heterojunction Solar Cell Applications

Directory of Open Access Journals (Sweden)

Youngseok Lee

2012-01-01

Full Text Available It is difficult to deposit extremely thin a-Si:H layer in heterojunction with intrinsic thin layer (HIT solar cell due to thermal damage and tough process control. This study aims to understand oxide passivation mechanism of silicon surface using rapid thermal oxidation (RTO process by examining surface effective lifetime and surface recombination velocity. The presence of thin insulating a-Si:H layer is the key to get high Voc by lowering the leakage current (I0 which improves the efficiency of HIT solar cell. The ultrathin thermal passivation silicon oxide (SiO2 layer was deposited by RTO system in the temperature range 500–950°C for 2 to 6 minutes. The thickness of the silicon oxide layer was affected by RTO annealing temperature and treatment time. The best value of surface recombination velocity was recorded for the sample treated at a temperature of 850°C for 6 minutes at O2 flow rate of 3 Lpm. A surface recombination velocity below 25 cm/s was obtained for the silicon oxide layer of 4 nm thickness. This ultrathin SiO2 layer was employed for the fabrication of HIT solar cell structure instead of a-Si:H, (i layer and the passivation and tunneling effects of the silicon oxide layer were exploited. The photocurrent was decreased with the increase of illumination intensity and SiO2 thickness.

Influence of colorant and film thickness on thermal aging characteristics of oxo-biodegradable plastic bags

Science.gov (United States)

Leuterio, Giselle Lou D.; Pajarito, Bryan B.; Domingo, Carla Marie C.; Lim, Anna Patricia G.

2016-05-01

Functional, lightweight, strong and cheap plastic bags incorporated with pro-oxidants undergo accelerated degradation under exposure to heat and oxygen. This work investigated the effect of colorant and film thickness on thermal aging characteristics of commercial oxo-biodegradable plastic bag films at 70 °C. Degradation is monitored through changes in infrared absorption, weight, and tensile properties of thermally aged films. The presence of carbonyl band in infrared spectrum after 672 h of thermal aging supports the degradation behavior of exposed films. Results show that incorporation of colorant and increasing thickness exhibit low maximum weight uptake. Titanium dioxide as white colorant in films lowers the susceptibility of films to oxygen uptake but enhances physical degradation. Higher amount of pro-oxidant loading also contributes to faster degradation. Opaque films are characterized by low tensile strength and high elastic modulus. Decreasing the thickness contributes to lower tensile strength of films. Thermally aged films with colorant and low thickness promote enhanced degradation.

Early Identification of the Patient with Endotheliopathy of Trauma by Arrival Serum Albumin

DEFF Research Database (Denmark)

Rodriguez, Erika Gonzalez; Cardenas, Jessica C; Lopez, Ernesto

2017-01-01

OBJECTIVE: Traumatic endotheliopathy (EoT) is associated with glycocalyx breakdown and capillary leak resulting in the extravasation of proteins. We hypothesized that lower serum albumin levels are associated with EoT, poor outcomes, and can be used for early EoT screening in trauma patients. MET...... with leakage of albumin from the intravascular compartment, which reemphasizes that arrival albumin may be a novel and timely approach to the identification of patients needing endothelial rescue therapy.......OBJECTIVE: Traumatic endotheliopathy (EoT) is associated with glycocalyx breakdown and capillary leak resulting in the extravasation of proteins. We hypothesized that lower serum albumin levels are associated with EoT, poor outcomes, and can be used for early EoT screening in trauma patients....... METHODS: We enrolled severely injured trauma patients with serum albumin levels available on admission. Syndecan-1 and soluble thrombomodulin were quantified from plasma by ELISA. Demographic and clinical data were obtained. We evaluated the association of serum albumin and EoT+ (syndecan-1 level ≥40 ng...

Modelling of oxidation and hydriding behaviour of Zircaloy-2 pressure tubes in PHWR

International Nuclear Information System (INIS)

Sah, D.N.; Sunil Kumar; Khan, K.B.

2002-01-01

A computer model named DOCTOR (Deuteriding of Coolant Tubes during Operation of Reactor) has been developed for predicting the axial profile of oxide thickness and hydrogen (Deuterium) concentration in PHWR pressure tubes. This model is applicable to single channel or full core analysis. The main source of hydrogen is considered to be oxidation of pressure tube on the i.d. surface by high temperature coolant water. Three stages of oxidation is considered namely, pre- transition, post transition and accelerated. Oxidation rate is considered to be dependent on channel power, axial power/flux distribution, coolant temperature and pre-existing oxide thickness at the location. The kinetics parameters for oxidation model are derived from the actual measurement of oxide thickness on a number of pressure tubes examined in PIE Division. The input data required for the model are: channel power, channel power factor, axial flux distribution, coolant inlet temperature, critical oxide thickness, hydrogen pick up fraction, initial hydrogen in the material and time of operation (efpy). The model calculates the oxide layer thickness on the inside surface of the pressure tube along the length. The amount of hydrogen picked up by the pressure tube is calculated from the oxide thickness using hydrogen pick up fraction determined from the PIE data. The pressure tube length is divided into a number of axial segments for calculation. The temperature and fast neutron flux assumed to be constant in a given segment. The axial temperature profile calculated from the axial power profile in the channel is used for calculating the oxidation rate at various locations in the pressure tube. The model has been validated with PIE data of hydrogen equivalent measurement on a number of irradiated Zircaloy-2 pressure tubes of various PHWRs. The performance of the model in predicting the axial profile of hydrogen in the pressure tubes has been found to be good. (author)

Non-contact Measurement of Remaining Thickness of Corroding Superheater Tubes. Phase 1

Energy Technology Data Exchange (ETDEWEB)

Borggreen, Kjeld; Storesund, Jan

2006-10-15

Corrosion of superheaters has become a severe problem in many biomass boilers and incineration plants. This new situation calls for frequent tube wall thickness testing of the superheaters during very short shut-downs. To meet this demand Electro Magnetic Acoustic Transducer (EMAT) candidates as substitute for conventional manually operated contact UT-transducers. The EMAT can contactlessly generate an ultrasonic wave in the interphase between the external oxide and the metal. This means that measurements can be undertaken much quicker and with a much higher coverage simultaneously, without preceding blast operations. It is the aim of the project to demonstrate the usefulness of two simple EMAT systems, Panametrics and Sonatest, for fast and reliable tube thickness inspections in difficult-to-access superheater sections. The present Phase 1 of the project involves testing of the performance of the two systems in laboratory with the following results: 1. Both instruments work well on plate, tube, and pipe samples assuming the presence of an external oxide layer formed at a temperature above approximately 400 deg C. 2. Both instruments work well on all types of ferritic and martensitic steels but not on austenitic steels. 3. Both instruments work well independent of the thickness of the active oxide layer. 4. Both instruments work well independent of tube diameter, wall thickness, and sample width. 5. Both instruments work well over a very large range of wall thicknesses. Minimum tube wall thickness is less than 1.8 mm. 6. The tolerable lift-off (free distance between transducer and tube surface) is 2.4 - 3.0 mm for Panametrics system and 3.6 - 4.8 mm for Sonatest's system. The tolerable lift-off is a measure of the thickness of ash deposits, which can be tolerated on the tube surface as well as the misplacement, which can be tolerated in case of remote tube testing. 7. The tolerable off-set between tube axis and probe axis is very large for both instruments (10

Children's physical activity during a segmented school week

DEFF Research Database (Denmark)

Schneller, Mikkel Bo; Schipperijn, Jasper; Nielsen, Glen

2017-01-01

BACKGROUND: Movement integration (MI) into traditional classroom teaching is a promising opportunity for children to increase physical activity (PA). Education outside the classroom (EOtC) can be regarded as MI, and has increased children's PA in case studies. The aim of this study....... Differences in proportion of time spent in PA intensities were tested using mixed-effects regression models. RESULTS: More moderate-to-vigorous physical activity (MVPA) occurred on days with physical education (PE) than days with EOtC (girls 0.79%, p = .001, CI = .26% to 1.31%; boys 1.35%, p = .003, CI = .32......% to 2.38%), while no difference was found between EOtC days and school days without EOtC and PE. Light physical activity (LPA) was higher on EOtC days than school days without EOtC and PE (girls 2.43% p

Differential reflectometry of thin film metal oxides on copper, tungsten, molybdenum and chromium

International Nuclear Information System (INIS)

Urban, F.K. III; Hummel, R.E.; Verink, E.D. Jr.

1982-01-01

A differential reflectometry study was undertaken to investigate the characteristics of thin oxide films on metal substrates. The oxides were produced by heating pure metals of copper, tungsten, molybdenum and chromium in dry oxygen. A new 'halfpolishing' technique was applied to obtain specimens with a step in oxide thickness in order to make them suitable for differential reflectometry. It was found that oxides formed this way yielded the same differential reflectograms as by electrochemical oxidation. A mathematical model involving the interaction of light with a thin corrosion product on metal substrates was applied to generate computer calculated differential reflectograms utilizing various optical constants and thicknesses of the assumed film. Three different thickness ranges have been identified. (a) For large film thicknesses, the differential reflectograms are distinguished by a sequence of interference peaks. (b) If the product of thickness and refraction index of the films is smaller than about 40 nm, no interference peaks are present. Any experimentally observed peaks in differential reflectograms of these films are caused entirely by electron interband transitions. (c) In an intermediate thickness range, superposition of interference and interband peaks are observed. (author)

Growth and characterization of thick cBN coatings on silicon and tool substrates

International Nuclear Information System (INIS)

Bewilogua, K.; Keunecke, M.; Weigel, K.; Wiemann, E.

2004-01-01

Recently some research groups have achieved progress in the deposition of cubic boron nitride (cBN) coatings with a thickness of 2 μm and more, which is necessary for cutting tool applications. In our laboratory, thick cBN coatings were sputter deposited on silicon substrates using a boron carbide target. Following a boron carbide interlayer (few 100 nm thick), a gradient layer with continuously increasing nitrogen content was prepared. After the cBN nucleation, the process parameters were modified for the cBN film growth to a thickness of more than 2 μm. However, the transfer of this technology to technically relevant substrates, like cemented carbide cutting inserts, required some further process modifications. At first, a titanium interlayer had to be deposited followed by a more than 1-μm-thick boron carbide layer. The next steps were identical to those on silicon substrates. The total coating thickness was in the range of 3 μm with a 0.5- to nearly 1-μm-thick cBN top layer. In spite of the enormous intrinsic stress, both the coatings on silicon and on cemented carbide exhibited a good adhesion and a prolonged stability in humid air. Oxidation experiments revealed a stability of the coating system on cemented carbide up to 700 deg. C and higher. Coated cutting inserts were tested in turning operations with different metallic workpiece materials. The test results will be compared to those of well-established cutting materials, like polycrystalline cubic boron nitride (PCBN) and oxide ceramics, considering the wear of coated tools

Contact Selectivity Engineering in a 2 μm Thick Ultrathin c-Si Solar Cell Using Transition-Metal Oxides Achieving an Efficiency of 10.8.

Science.gov (United States)

Xue, Muyu; Islam, Raisul; Meng, Andrew C; Lyu, Zheng; Lu, Ching-Ying; Tae, Christian; Braun, Michael R; Zang, Kai; McIntyre, Paul C; Kamins, Theodore I; Saraswat, Krishna C; Harris, James S

2017-12-06

In this paper, the integration of metal oxides as carrier-selective contacts for ultrathin crystalline silicon (c-Si) solar cells is demonstrated which results in an ∼13% relative improvement in efficiency. The improvement in efficiency originates from the suppression of the contact recombination current due to the band offset asymmetry of these oxides with Si. First, an ultrathin c-Si solar cell having a total thickness of 2 μm is shown to have >10% efficiency without any light-trapping scheme. This is achieved by the integration of nickel oxide (NiO x ) as a hole-selective contact interlayer material, which has a low valence band offset and high conduction band offset with Si. Second, we show a champion cell efficiency of 10.8% with the additional integration of titanium oxide (TiO x ), a well-known material for an electron-selective contact interlayer. Key parameters including V oc and J sc also show different degrees of enhancement if single (NiO x only) or double (both NiO x and TiO x ) carrier-selective contacts are integrated. The fabrication process for TiO x and NiO x layer integration is scalable and shows good compatibility with the device.

Cation incorporation into zirconium oxide in LiOH, NaOH, and KOH solutions

International Nuclear Information System (INIS)

Jeong, Y.H.; Kim, K.H.; Baek, J.H.

1999-01-01

To investigate the cation incorporation into zirconium oxide, SIMS analysis was performed on the specimens prepared to have an equal oxide thickness in LiOH, NaOH, and KOH solutions. Even though they have an equal oxide thickness in LiOH, NaOH, and KOH solutions, the penetration depth of cation into the oxide decreased with an increase in the ionic radius of cation. The cation is considered to control the corrosion in alkali hydroxide solutions and its effect is dependent on the concentration of alkali and the oxide thickness. The slight enhancement of the corrosion rate at a low concentration is thought to be caused by cation incorporation into oxide, while the significant acceleration at a high concentration is due to the transformation of oxide microstructures that would be also induced by cation incorporation into oxide. (orig.)

The effect of crystal textures on the anodic oxidization of zirconium in a boiling nitric acid solution

International Nuclear Information System (INIS)

Kato, Chiaki; Ishijima, Yasuhiro; Ueno, Fumiyoshi; Yamamoto, Masahiro

2016-01-01

The effects of crystal textures and the potentials in the anodic oxidation of zirconium in a boiling nitric acid solution were investigated to study the stress corrosion cracking of zirconium in nitric acid solutions. The test specimen was machined such that the specimen surface was parallel to the rolling surface, arranged with a (0002) crystal texture. The potentials applied for the anodic oxidation of zirconium were set at 1.2, 1.4, and 1.5 V against a saturated KCl–Ag/AgCl electrode (SSE) in boiling 6 M HNO_3. The growth of the zirconium oxide film dramatically changed depending on the applied potential at a closed depassivation potential (1.47 V vs. SSE in this study). At 1.5 V, the zirconium oxide film rapidly grows, and its growth exhibits cyclic oxidation kinetics in accordance with a nearly cubic rate law. The zirconium oxide film grows according to the quantity of electric charge and the growth rate does not depend on the crystal texture in the pretransition region before the cyclic oxidation kinetics. However, the growth and cracking under the thick oxide film depend on the crystal texture in the transition region. On the normal direction side, the oxide film thickness decreases on average since some areas of the thick oxide film are separated from the specimen surface owing to the cracks in the thick oxide. On the rolling direction (RD) side, no cracks in the thick oxide film are observed, but cracks are found under the thick oxide film, which deeply propagate in metal matrix along the RD without an external stress. The cracks under the thick oxide film propagate to the center of the oxide layer. The crystal orientation relationship between the oxide layer and the zirconium matrix is (0002)_Z_r//(111)_Z_r_O_2, and the cracks in the oxide layer propagate in the (0002)_Z_r plane in the zirconium matrix. The oxide layer consists of string-like zirconium oxide and zirconium hydride. The string-like zirconium oxide contains orthorhombic ZrO_2 in addition

Simulation of planar single-gate Si tunnel FET with average subthreshold swing of less than 60 mV/decade for 0.3 V operation

Science.gov (United States)

Kukita, Kentaro; Uechi, Tadayoshi; Shimokawa, Junji; Goto, Masakazu; Yokota, Yoshinori; Kawanaka, Shigeru; Tanamoto, Tetsufumi; Tanimoto, Hiroyoshi; Takagi, Shinichi

2018-04-01

Planar single-gate (SG) silicon (Si) tunnel field effect transistors (TFETs) are attracting interest for ultra-low voltage operation and CMOS applications. For the achievement of subthreshold swing (S.S.) less than thermal limit of Si MOSFETs (S.S. = 60 mV/decade at 300 K), previous studies have proposed the formation of a pocket region, which needs very difficult implantation process. In this work, a planar SG Si TFET without pocket was proposed by using the technology computer-aided design (TCAD) simulations. An average S.S. of less than 60 mV/decade for 0.3 V (= V gs = V ds) operation was obtained. It is found that both low average S.S. (= 27.8 mV/decade) and high on-current I on (= 3.8 µA/µm) are achieved without pocket doping by scaling the equivalent oxide thickness (EOT) and increasing the gate-to-source overlap length L ov.

Oxidative damage markers are significantly associated with the carotid artery intima-media thickness after controlling for conventional risk factors of atherosclerosis in men.

Directory of Open Access Journals (Sweden)

Jin-Ha Yoon

Full Text Available This study aimed to assess the association between oxidative damage markers and carotid artery intima-media thickness (CIMT after controlling for conventional risk factors of atherosclerosis in multiple logistic regression models.Fifty-one case male participants (CIMT ≥ 0.9 mm were enrolled during their visits to Korean Genomic Rural Cohort Study of Wonju centers between May 1 and August 31, 2011, along with 51 control participants (CIMT < 0.9 mm selected using frequency matching by age group. The levels of oxidative damage markers, 8-hydroxy-2'-deoxyquuanosine (8-OHdG, malondialdehyde (MDA, and 8-iso-prostaglandin F2α (Isoprostane, were measured. Conditional logistic regression models were used to evaluate relative relationships between the oxidative damage markers and the risk of high CIMT.The markers of oxidative lipid (Isoprostane and MDA and DNA (8-OHdG damage were associated with CIMT after controlling for the conventional risk factors, including age, low density lipoprotein, body mass index, smoking history, alcohol consumption, and metabolic syndrome (ORs [95% CI] for Isoprostane: 3rd tertile, 8.47 [2.59-27.67]; for MDA: 3rd tertile, 8.47 [2.59-27.67]; for 8-OHdG: 3rd tertile, 5.58 [1.79-17.33]. When all the oxidative damage markers were incorporated in the same logistic regression model, only Isoprostane was significantly related to CIMT (OR [95% CI]: 4.22 [1.31-13.53] in 2nd tertile and 14.21 [3.34-60.56] in 3rd tertile.In this nested case-control study, the oxidative damage markers of lipid and DNA were associated with CIMT even after controlling for the conventional risk factors of cardiovascular diseases.

Planar Zeolite Film-Based Potentiometric Gas Sensors Manufactured by a Combined Thick-Film and Electroplating Technique

Science.gov (United States)

Marr, Isabella; Reiß, Sebastian; Hagen, Gunter; Moos, Ralf

2011-01-01

Zeolites are promising materials in the field of gas sensors. In this technology-oriented paper, a planar setup for potentiometric hydrocarbon and hydrogen gas sensors using zeolites as ionic sodium conductors is presented, in which the Pt-loaded Na-ZSM-5 zeolite is applied using a thick-film technique between two interdigitated gold electrodes and one of them is selectively covered for the first time by an electroplated chromium oxide film. The influence of the sensor temperature, the type of hydrocarbons, the zeolite film thickness, and the chromium oxide film thickness is investigated. The influence of the zeolite on the sensor response is briefly discussed in the light of studies dealing with zeolites as selectivity-enhancing cover layers. PMID:22164042

Planar Zeolite Film-Based Potentiometric Gas Sensors Manufactured by a Combined Thick-Film and Electroplating Technique

Directory of Open Access Journals (Sweden)

Gunter Hagen

2011-08-01

Full Text Available Zeolites are promising materials in the field of gas sensors. In this technology-oriented paper, a planar setup for potentiometric hydrocarbon and hydrogen gas sensors using zeolites as ionic sodium conductors is presented, in which the Pt-loaded Na-ZSM-5 zeolite is applied using a thick-film technique between two interdigitated gold electrodes and one of them is selectively covered for the first time by an electroplated chromium oxide film. The influence of the sensor temperature, the type of hydrocarbons, the zeolite film thickness, and the chromium oxide film thickness is investigated. The influence of the zeolite on the sensor response is briefly discussed in the light of studies dealing with zeolites as selectivity-enhancing cover layers.

Soft Sensor for Oxide Scales on the Steam Side of Superheater Tubes under Uneven Circumferential Load

Directory of Open Access Journals (Sweden)

Qing Wei Li

2015-01-01

Full Text Available A soft sensor for oxide scales on the steam side of superheater tubes of utility boiler under uneven circumferential loading is proposed for the first time. First finite volume method is employed to simulate oxide scales growth temperature on the steam side of superheater tube. Then appropriate time and spatial intervals are selected to calculate oxide scales thickness along the circumferential direction. On the basis of the oxide scale thickness, the stress of oxide scales is calculated by the finite element method. At last, the oxide scale thickness and stress sensors are established on support vector machine (SMV optimized by particle swarm optimization (PSO with time and circumferential angles as inputs and oxide scale thickness and stress as outputs. Temperature and stress calculation methods are validated by the operation data and experimental data, respectively. The soft sensor is applied to the superheater tubes of some power plant. Results show that the soft sensor can give enough accurate results for oxide scale thickness and stress in reasonable time. The forecasting model provides a convenient way for the research of the oxide scale failure.

Effect of diffusion on percolation threshold in thick-film resistors

International Nuclear Information System (INIS)

Abdurakhmanov, G.

2009-01-01

Resistivity ρ(C) of thick-film resistors doped by metal oxides is simulated as a function of volume content C of the ligature, firing temperature T f and firing time τ. It is proved that the doping of a glass during firing of the thick film resistor is rather uniform. It is shown also, that conductance takes place in the whole volume of the sample, but not through the sole infinite cluster only, even the content of a conductive phase is below than the theoretical percolation threshold value.

Influence of multi-deposition multi-annealing on time-dependent dielectric breakdown characteristics of PMOS with high-k/metal gate last process

International Nuclear Information System (INIS)

Wang Yan-Rong; Yang Hong; Xu Hao; Wang Xiao-Lei; Luo Wei-Chun; Qi Lu-Wei; Zhang Shu-Xiang; Wang Wen-Wu; Yan Jiang; Zhu Hui-Long; Zhao Chao; Chen Da-Peng; Ye Tian-Chun

2015-01-01

A multi-deposition multi-annealing technique (MDMA) is introduced into the process of high-k/metal gate MOSFET for the gate last process to effectively reduce the gate leakage and improve the device’s performance. In this paper, we systematically investigate the electrical parameters and the time-dependent dielectric breakdown (TDDB) characteristics of positive channel metal oxide semiconductor (PMOS) under different MDMA process conditions, including the deposition/annealing (D and A) cycles, the D and A time, and the total annealing time. The results show that the increases of the number of D and A cycles (from 1 to 2) and D and A time (from 15 s to 30 s) can contribute to the results that the gate leakage current decreases by about one order of magnitude and that the time to fail (TTF) at 63.2% increases by about several times. However, too many D and A cycles (such as 4 cycles) make the equivalent oxide thickness (EOT) increase by about 1 Å and the TTF of PMOS worsen. Moreover, different D and A times and numbers of D and A cycles induce different breakdown mechanisms. (paper)

Are children participating in a quasi-experimental education outside the classroom intervention more physically active?

DEFF Research Database (Denmark)

Schneller, Mikkel Bo; Duncan, Scott; Schipperijn, Jasper

2017-01-01

Background: Education outside the classroom (EOtC) is a curriculum-based approach to teaching that has shown positive associations with children's physical activity and academic learning in small-scale case studies. The purpose of this large-scale quasi-experimental study was to determine...... being spent moderately and vigorously physically active. No differences were observed for girls. Implementing EOtC into schools' weekly practice can be a time- and cost-neutral, supplementary way to increase time spent in PA for boys through grades three to six. Trial registration: The Scientific...... if children who participate regularly in EOtC spend more time being physically active than children who do not. Methods: In the 2014/2015 study TEACHOUT, classes were recruited in pairs such that each EOtC class had a non-EOtC comparison class at the same school and grade level. Participants in 17 EOt...

Stabilized chromium oxide film

Science.gov (United States)

Garwin, Edward L.; Nyaiesh, Ali R.

1988-01-01

Stabilized air-oxidized chromium films deposited on high-power klystron ceramic windows and sleeves having a thickness between 20 and 150.ANG. are useful in lowering secondary electron emission yield and in avoiding multipactoring and window failure due to overheating. The ceramic substrate for the film is chosen from alumina, sapphire or beryllium oxide.

The effectiveness of Microsoft Project in assessing extension of time under PAM 2006 standard form of contract

Science.gov (United States)

Suhaida, S. K.; Wong, Z. D.

2017-11-01

Time is equal to money; and it is applies in the construction industry where time is very important. Most of the standard form of contracts provide contractual clauses to ascertain time and money related to the scenarios while Extension of Time (EOT) is one of them. Under circumstance and delays, contractor is allow to apply EOT in order to complete the works on a later completion date without Liquidated Damages (LD) imposed to the claimant. However, both claimants and assessors encountered problems in assessing the EOT. The aim of this research is to recommend the usage of Microsoft Project as a tool in assessing EOT associated with the standard form of contract, PAM 2006. A quantitative method is applied towards the respondents that consisted of architects and quantity surveyors (QS) in order to collect data on challenges in assessing EOT claims and the effectiveness of Microsoft Project as a tool. The finding of this research highlighted that Microsoft Project can serve as a basis to perform EOT tasks as this software can be used as a data bank to store handy information which crucial for preparing and evaluating EOT.

Magnetic property zonation in a thick lava flow

Science.gov (United States)

Audunsson, Haraldur; Levi, Shaul; Hodges, Floyd

1992-04-01

Intraflow structures and magmatic evolution in an extensive and thick (30-60 m) basaltic lava flow are examined on the basis of grain size and composition-dependent magnetic properties of titanomagnetite materials. Microprobe data indicate that the intraflow oxidation state Fe(3+)/Fe(2+) of the initially precipitated primary titanomagnetites increases with falling equilibrium temperature from the flow margins to a maximum near the center, the position of lowest equilibrium temperature. In contrast, Curie temperature measurements indicate that titanomagnetite oxidation increases with height in the flow. Modification of the initially symmetric equilibrium titanomagnetite compositions was caused by subsolidus high-temperature oxidation possibly due to hydrogen loss produced by dissociation of magmatic water, as well as unknown contributions of circulating air and percolating water from above. The titanomagnetites of the basal layer of the flow remain essentially unaltered.

Multiproxy record of abrupt sea-surface cooling across the Eocene-Oligocene transition in the Gulf of Mexico

NARCIS (Netherlands)

Wade, B.S.; Houben, A.J.P.; Quaijtaal, W.; Schouten, S.; Rosenthal, Y.; Miller, K.G.; Katz, M.E.; Wright, J.D.; Brinkhuis, H.

2012-01-01

The Eocene-Oligocene transition (EOT; ca. 33–34 Ma) was a time of pronounced climatic change, marked by the establishment of continental-scale Antarctic ice sheets. The timing and extent of temperature change associated with the EOT is controversial. Here we present multiproxy EOT climate records

Thermal behavior variations in coating thickness using pulse phase thermography

Energy Technology Data Exchange (ETDEWEB)

Ranjit, Shrestha; Chung, Yoonjae; Kim, Won Tae [Kongju National University, Cheonan (Korea, Republic of)

2016-08-15

This paper presents a study on the use of pulsed phase thermography in the measurement of thermal barrier coating thickness with a numerical simulation. A multilayer heat transfer model was used to analyze the surface temperature response acquired from one-sided pulsed thermal imaging. The test sample comprised four layers: the metal substrate, bond coat, thermally grown oxide and the top coat. The finite element software, ANSYS, was used to model and predict the temperature distribution in the test sample under an imposed heat flux on the exterior of the TBC. The phase image was computed with the use of the software MATLAB and Thermofit Pro using a Fourier transform. The relationship between the coating thickness and the corresponding phase angle was then established with the coating thickness being expressed as a function of the phase angle. The method is successfully applied to measure the coating thickness that varied from 0.25 mm to 1.5 mm.

Micro-length anodic porous niobium oxide for lithium-ion thin film battery applications

International Nuclear Information System (INIS)

Yoo, Jeong Eun; Park, Jiyoung; Cha, Gihoon; Choi, Jinsub

2013-01-01

The anodization of niobium in an aqueous mixture of H 3 PO 4 and HF in the potential range from 2.5 to 30 V for 2 h at 5 °C was performed, demonstrating that anodic porous niobium oxide film with a thickness of up to 2000 nm, including a surface dissolution layer, can be obtained by controlling the applied potential and composition of the electrolytes. Specifically, surface dissolution-free porous niobium oxide film with a thickness of 800 nm can be prepared in a low electrolyte concentration. The surface dissolution is observed when the concentration ratio of HF (wt.%):H 3 PO 4 (M) was more than 2:1. The discontinuous layers in the niobium oxide film were observed when the thickness was higher than 500 nm, which was ascribed to the large volume expansion of the niobium oxide grown from the niobium metal. The anodic porous niobium oxide film was used as the cathode for lithium-ion batteries in the potential range from 1.2 to 3.0 V at a current density of 7.28 × 10 − 6 A cm −2 . The first discharge capacity of ca. 53 μA h cm − 2 was obtained in 800 nm thick niobium oxide without a surface dissolution layer. - Highlights: ► Anodic porous niobium oxide film with a thickness of 2000 nm was obtained. ► Surface dissolution-free porous niobium oxide film was prepared. ► The niobium oxide film was used as the cathode for lithium-ion batteries

Structural evolution of tunneling oxide passivating contact upon thermal annealing.

Science.gov (United States)

Choi, Sungjin; Min, Kwan Hong; Jeong, Myeong Sang; Lee, Jeong In; Kang, Min Gu; Song, Hee-Eun; Kang, Yoonmook; Lee, Hae-Seok; Kim, Donghwan; Kim, Ka-Hyun

2017-10-16

We report on the structural evolution of tunneling oxide passivating contact (TOPCon) for high efficient solar cells upon thermal annealing. The evolution of doped hydrogenated amorphous silicon (a-Si:H) into polycrystalline-silicon (poly-Si) by thermal annealing was accompanied with significant structural changes. Annealing at 600 °C for one minute introduced an increase in the implied open circuit voltage (V oc ) due to the hydrogen motion, but the implied V oc decreased again at 600 °C for five minutes. At annealing temperature above 800 °C, a-Si:H crystallized and formed poly-Si and thickness of tunneling oxide slightly decreased. The thickness of the interface tunneling oxide gradually decreased and the pinholes are formed through the tunneling oxide at a higher annealing temperature up to 1000 °C, which introduced the deteriorated carrier selectivity of the TOPCon structure. Our results indicate a correlation between the structural evolution of the TOPCon passivating contact and its passivation property at different stages of structural transition from the a-Si:H to the poly-Si as well as changes in the thickness profile of the tunneling oxide upon thermal annealing. Our result suggests that there is an optimum thickness of the tunneling oxide for passivating electron contact, in a range between 1.2 to 1.5 nm.

Structural, electrical, and electrochemical characterization of Ni--Pr oxide thick films

Energy Technology Data Exchange (ETDEWEB)

Mari, C; Scolari, V; Fiori, G; Pizzini, S

1977-03-01

Oxides with metallic conductivity could and have been used instead of noble metals as insert electrodes in aqueous solutions as well as electrodes for high temperature fuel cells and electrolyzers and as catalysts for the conversion of exhaust gases from internal combustion engines. The aim of this paper is to report the results of a physico-chemical characterization (structure, morphology, electrochemical behavior) of Ni--Pr oxides which have been proposed as electrode materials for high temperature fuel cells. The electrochemical characterization was carried out in aqueous solutions at room temperature and with solid electrolytes at high temperature. Evidence has been found in the former case for an oxide electrode type of behavior. In the high temperature case, very low overvoltage values have been observed during cathodic oxygen reduction, while the electrode undergoes a reaction with oxygen during anodic oxygen evolution.

Enhanced low-temperature oxidation of zirconium alloys under irradiation

International Nuclear Information System (INIS)

Cox, B.; Fidleris, V.

1989-01-01

The linear growth of relatively thick (>300 nm) interference-colored oxide films on zirconium alloy specimens exposed in the Advanced Test Reactor (ATR) coolant at ≤55 o C was unexpected. Initial ideas were that this was a photoconduction effect. Experiments to study photoconduction in thin anodic zirconium oxide (ZrO 2 ) films in the laboratory were initiated to provide background data. It was found that, in the laboratory, provided a high electric field was maintained across the oxide during ultraviolet (UV) irradiation, enhanced growth of oxide occurred in the irradiated area. Similarly enhanced growth could be obtained on thin thermally formed oxide films that were immersed in an electrolyte with a high electric field superimposed. This enhanced growth was found to be caused by the development of porosity in the barrier oxide layer by an enhanced local dissolution and reprecipitation process during UV irradiation. Similar porosity was observed in the oxide films on the ATR specimens. Since it is not thought that a high electric field could have been present in this instance, localized dissolution of fast-neutron primary recoil tracks may be the operative mechanism. In all instances, the specimens attempt to maintain the normal barrier-layer oxide thickness, which causes the additional oxide growth. Similar mechanisms may have operated during the formation of thick loosely adherent, porous oxides in homogeneous reactor solutions under irradiation, and may be the cause of enhanced oxidation of zirconium alloys in high-temperature water-cooled reactors in some water chemistries. (author)

Review Of Plutonium Oxidation Literature

International Nuclear Information System (INIS)

Korinko, P.

2009-01-01

A brief review of plutonium oxidation literature was conducted. The purpose of the review was to ascertain the effect of oxidation conditions on oxide morphology to support the design and operation of the PDCF direct metal oxidation (DMO) furnace. The interest in the review was due to a new furnace design that resulted in oxide characteristics that are different than those of the original furnace. Very little of the published literature is directly relevant to the DMO furnace operation, which makes assimilation of the literature data with operating conditions and data a convoluted task. The oxidation behavior can be distilled into three regimes, a low temperature regime (RT to 350 C) with a relatively slow oxidation rate that is influenced by moisture, a moderate temperature regime (350-450 C) that is temperature dependent and relies on more or less conventional oxidation growth of a partially protective oxide scale, and high temperature oxidation (> 500 C) where the metal autocatalytically combusts and oxidizes. The particle sizes obtained from these three regimes vary with the finest being from the lowest temperature. It is surmised that the slow growth rate permits significant stress levels to be achieved that help break up the oxides. The intermediate temperatures result in a fairly compact scale that is partially protective and that grows to critical thickness prior to fracturing. The growth rate in this regime may be parabolic or paralinear, depending on the oxidation time and consequently the oxide thickness. The high temperature oxidation is invariant in quiescent or nearly quiescent conditions due to gas blanketing while it accelerates with temperature under flowing conditions. The oxide morphology will generally consist of fine particles ( 250 (micro)m). The particle size ratio is expected to be < 5%, 25%, and 70% for fine, medium and large particles, respectively, for metal temperatures in the 500-600 C range.

Microstructural Study on Oxidation Resistance of Nonmodified and Platinum Modified Aluminide Coating

Science.gov (United States)

Zagula-Yavorska, Maryana; Sieniawski, Jan

2014-03-01

Platinum electroplating layers (3 and 7 μm thick) were deposited on the surface of the Inconel 713 LC, CMSX 4, and Inconel 625 Ni-base superalloys. Diffusion treatment at 1050°C for 2 h under argon atmosphere was performed after electroplating. Diffusion treated samples were aluminized according to the low activity CVD process at 1050°C for 8 h. The nonmodified aluminide coatings consist of NiAl phase. Platinum modification let to obtain the (Ni,Pt)Al phase in coatings. The coated samples were subjected to cyclic oxidation testing at 1100°C. It was discovered that increase of the platinum electroplating thickness from 3 to 7 μm provides the improvement of oxidation resistance of aluminide coatings. Increase of the platinum thickness causes decreases in weight change and decreases in parabolic constant during oxidation. The platinum provides the pure Al2O3 oxide formation, slow growth oxide layer, and delay the oxide spalling during heating-cooling thermal cycles.

Diffusion of hydrogen in iron oxides

International Nuclear Information System (INIS)

Bruzzoni, P.

1993-01-01

The diffusion of hydrogen in transitions metals oxides has been recently studied at room temperature through the permeability electrochemical technique. This work studies thin oxide layers grown in air or in presence of oxidizing atmospheres at temperatures up to 200 deg C. The substrate was pure iron with different superficial treatments. It was observed that these oxides reduce up to three magnitudes orders, the hydrogen stationary flux through membranes of usual thickness in comparison with iron membranes free of oxide. (Author)

Full reflector thickness and isolation thickness on neutron transport

International Nuclear Information System (INIS)

Sakai, Tomohiro; Naito, Yoshitaka; Komuro, Yuichi.

1988-08-01

A method to determine ''full reflector thickness'' and ''isolation thickness'', which is utilized for criticality safety evaluation on nuclear fuel facilities, was proposed in this paper. Firstly, a calculation was tryed to obtain the two kinds of thicknesses from the result of criticality calculations for a specific case. Then, two simple equations which calculates the two kinds of thicknesses were made from the relation between reflector (or isolator) thickness and k eff , and one-group diffusion theory. Finally, we proposed a new method to determine the thicknesses. From the method we proposed, ''full reflector thickness'' and ''isolation thickness'' can be obtain using the equations and migration length of the reflector (or isolator) and infinite and effective multiplication factor of the fuel. (author)

Characterization of anisotropic UF-membranes: top layer thickness and pore structure

NARCIS (Netherlands)

Cuperus, F.P.; Cuperus, F.P.; Bargeman, D.; Bargeman, D.; Smolders, C.A.; Smolders, C.A.

1991-01-01

Anisotropic poly(2,6-dimethyl-, 1,4-phenylene oxide) (PPO) ultrafiltration membranes are characterized by means of two techniques. A new method for the determination of skin thicknesses, the gold sol method, is introduced and applied to these membranes. The membranes appeared to have a well-defined

Steam assisted oxide growth on aluminium alloys using oxidative chemistries: Part I Microstructural investigation

DEFF Research Database (Denmark)

Din, Rameez Ud; Piotrowska, Kamila; Gudla, Visweswara Chakravarthy

2015-01-01

The surface treatment of aluminium alloys under steam containing KMnO4 and HNO3resulted in the formation of an oxide layer having a thickness of up to 825 nm. The use of KMnO4 and HNO3 in the steam resulted in incorporation of the respective chemical species into the oxide layer. Steam treatment ...

Effects of rework on adhesion of Pb-In soldered gold thick films

International Nuclear Information System (INIS)

Gehman, R.W.; Becka, G.A.; Losure, J.A.

1982-02-01

The feasibility of repeatedly reworking Pb-In soldered joints on gold thick films was evaluated. Nailhead adhesion tests on soldered thick films typically resulted in failure within the bulk solder (50 In-50 Pb). Average strengths increased with each rework, and the failure mode changed. An increase in metalization lift-off occurred with successive reworks. An investigation was initiated to determine why these changes occurred. Based on this work, the thick film adhesion to the substrate appeared to be lowered by indium reduction of cadmium oxide and by formation of a weak, brittle intermetallic compound, Au 9 In 4 . It was concluded that two solder reworks could be conducted without significant amounts of metallization lift-off during nailhead testing

Study of niobium oxidation by photoelectron spectroscopy

International Nuclear Information System (INIS)

Durand, C.

1985-01-01

The chemical composition of thin oxide layers, grown on clean niobium, in low oxygen pressure, was studied by a surface analysis method: X-ray Photoelectron Spectroscopy. The purpose of this study was to find the best conditions for the building of Nb/Nb oxide/Pb Josephson junctions, and particularly to minimise the interface thickness during the formation of the insulator film (Nb 2 O 5 ) on the metal (Nb). This interface is essentially formed by the monoxide (NbO) and dioxide (NbO 2 ). Nb 3d XPS core level peak positions and area ratios (obtained by the signal decomposition) of the components of the total peak, were used to determine the presence of the different oxidation states II, IV and V, their relative abundance, oxide thicknesses and their depth distribution. All this information was extracted by a special numerical procedure [fr

Bismuth iron oxide thin films using atomic layer deposition of alternating bismuth oxide and iron oxide layers

Energy Technology Data Exchange (ETDEWEB)

Puttaswamy, Manjunath; Vehkamäki, Marko [University of Helsinki, Department of Chemistry, P.O. Box 55, FI-00014 Helsinki (Finland); Kukli, Kaupo, E-mail: kaupo.kukli@helsinki.fi [University of Helsinki, Department of Chemistry, P.O. Box 55, FI-00014 Helsinki (Finland); University of Tartu, Institute of Physics, W. Ostwald 1, EE-50411 Tartu (Estonia); Dimri, Mukesh Chandra [National Institute of Chemical Physics and Biophysics, Akadeemia tee 23, EE-12618 Tallinn (Estonia); Kemell, Marianna; Hatanpää, Timo; Heikkilä, Mikko J. [University of Helsinki, Department of Chemistry, P.O. Box 55, FI-00014 Helsinki (Finland); Mizohata, Kenichiro [University of Helsinki, Department of Physics, P.O. Box 64, FI-00014 Helsinki (Finland); Stern, Raivo [National Institute of Chemical Physics and Biophysics, Akadeemia tee 23, EE-12618 Tallinn (Estonia); Ritala, Mikko; Leskelä, Markku [University of Helsinki, Department of Chemistry, P.O. Box 55, FI-00014 Helsinki (Finland)

2016-07-29

Bismuth iron oxide films with varying contributions from Fe{sub 2}O{sub 3} or Bi{sub 2}O{sub 3} were prepared using atomic layer deposition. Bismuth (III) 2,3-dimethyl-2-butoxide, was used as the bismuth source, iron(III) tert-butoxide as the iron source and water vapor as the oxygen source. The films were deposited as stacks of alternate Bi{sub 2}O{sub 3} and Fe{sub 2}O{sub 3} layers. Films grown at 140 °C to the thickness of 200–220 nm were amorphous, but crystallized upon post-deposition annealing at 500 °C in nitrogen. Annealing of films with intermittent bismuth and iron oxide layers grown to different thicknesses influenced their surface morphology, crystal structure, composition, electrical and magnetic properties. Implications of multiferroic performance were recognized in the films with the remanent charge polarization varying from 1 to 5 μC/cm{sup 2} and magnetic coercivity varying from a few up to 8000 A/m. - Highlights: • Bismuth iron oxide thin films were grown by atomic layer deposition at 140 °C. • The major phase formed in the films upon annealing at 500 °C was BiFeO{sub 3}. • BiFeO{sub 3} films and films containing excess Bi favored electrical charge polarization. • Slight excess of iron oxide enhanced saturative magnetization behavior.

Quasi-cylindrical wave contribution in experiments on extraordinary optical transmission.

Science.gov (United States)

van Beijnum, Frerik; Rétif, Chris; Smiet, Chris B; Liu, Haitao; Lalanne, Philippe; van Exter, Martin P

2012-12-20

A metal film perforated by a regular array of subwavelength holes shows unexpectedly large transmission at particular wavelengths, a phenomenon known as the extraordinary optical transmission (EOT) of metal hole arrays. EOT was first attributed to surface plasmon polaritons, stimulating a renewed interest in plasmonics and metallic surfaces with subwavelength features. Experiments soon revealed that the field diffracted at a hole or slit is not a surface plasmon polariton mode alone. Further theoretical analysis predicted that the extra contribution, from quasi-cylindrical waves, also affects EOT. Here we report the experimental demonstration of the relative importance of surface plasmon polaritons and quasi-cylindrical waves in EOT by considering hole arrays of different hole densities. From the measured transmission spectra, we determine microscopic scattering parameters which allow us to show that quasi-cylindrical waves affect EOT only for high densities, when the hole spacing is roughly one wavelength. Apart from providing a deeper understanding of EOT, the determination of microscopic scattering parameters from the measurement of macroscopic optical properties paves the way to novel design strategies.

Oxidation of Ni(Pt)Si by molecular vs. atomic oxygen

International Nuclear Information System (INIS)

Manandhar, Sudha; Copp, Brian; Kelber, J.A.

2008-01-01

X-ray photoelectron spectroscopy (XPS) has been used to characterize the oxidation of a clean Ni(Pt)Si surface under two distinct conditions: exposure to a mixed flux of atomic and molecular oxygen (O + O 2 ; P O+O 2 = 5 x 10 -6 Torr) and pure molecular oxygen (O 2 ; P O 2 = 10 -5 Torr) at ambient temperatures. Formation of the clean, stoichiometric (nickel monosilicide) phase under vacuum conditions results in the formation of a surface layer enriched in PtSi. Oxidation of this surface in the presence of atomic oxygen initially results in formation of a silicon oxide overlayer. At higher exposures, kinetically limited oxidation of Pt results in Pt silicate formation. No passivation of oxygen uptake of the sample is observed for total O + O 2 exposure 4 L, at which point the average oxide/silicate overlayer thickness is 23 (3) A (uncertainty in the last digit in parentheses). In contrast, exposure of the clean Ni(Pt)Si surface to molecular oxygen only (maximum exposure: 5 x 10 5 L) results in slow growth of a silicon oxide overlayer, without silicate formation, and eventual passivation at a total average oxide thickness of 8(1) A, compared to a oxide average thickness of 17(2) A (no silicate formation) for the as-received sample (i.e., exposed to ambient.) The aggressive silicon oxidation by atomic oxygen, results in Ni-rich silicide formation in the substrate and the kinetically limited oxidation of the Pt

Impact of oxide thickness on gate capacitance – Modelling and ...

Indian Academy of Sciences (India)

Department of Electronics and Communication Engineering, National ... conventional HEMT, Schottky barrier diode is formed at the gate electrode. .... term corresponds to the energy required for the electric field in the oxide layer and the.

Corrosion mechanisms of zirconium alloys - study of the initial oxidation kinetics and of the mechanical behaviour of the metal/oxide system

International Nuclear Information System (INIS)

Parise, M.

1996-12-01

Nuclear fuel claddings are made of zirconium alloys. The conditions of use lead the cladding oxidize outside. The so-formed layers behaves like a thermal barrier and prevents from using oxidized claddings with an oxide thickness larger than 100 μm. The oxidation kinetic is approximately cubic for oxide thicknesses smaller than about 2μm, linear beyond. A kinetic model has been proposed which estimates the post-transition growth rate from the kinetic parameters of the pre-transition state and morphological features of post-transition layers. This work aims at providing the necessary elements to validate this model and studying the layers around the kinetic transition, in order to determine whether the oxidation mechanisms before and after the transition are similar. Thicknesses of the 50 - 500 nm range of the oxide layers are measured by an optical method; pre-transition kinetics are thus precisely determined. The effect of the composition, the thermal treatment and the presence of oxygen in solid solution is studied. The morphological and crystallographic study of the layers show that they exhibit a lot of similarities before and after the kinetic transition. The results concerning the kinetic aspects and the morphology of the post-transition layers point out that the proposed model leads to realistic post-transition growth rates. Furthermore, the kinetic transition corresponds to the appearance of cracks in the oxide layer. The mechanical behaviour of the metal/oxide system has been modelled at different scales. When the specific behaviours of the metal and the oxide are taken into account together with the interface geometry, radial stresses appear, which are high enough to locally open cracks. The appearance and localization of cracks depend on both the interface geometry and the stress distribution in the metal/oxide system. (author)

Sputter fabricated Nb-oxide-Nb josephson junctions incorporating post-oxidation noble metal layers

International Nuclear Information System (INIS)

Bain, R.J.P.; Donaldson, G.B.

1985-01-01

We present an extension, involving other metals, of the work of Hawkins and Clarke, who found that a thin layer of copper prevented the formation of the superconductive shorts which are an inevitable consequence of sputtering niobium counter-electrodes directly on top of niobium oxide. We find gold to be the most satisfactory, and that 0.3 nm is sufficient to guarantee short-free junctions of excellent electrical and mechanical stability, though high excess conductance means they are best suited to shunted-junction applications, as in SQUIDs. We present results for critical current dependence on oxide thickness and on gold thickness. Our data shows that thermal oxide growth is described by the Cabrera-Mott mechanism. We show that the protective effect of the gold layer can be understood in terms of the electro-chemistry of the Nb-oxide-Au structure, and that the reduced quasi-particle resistance of the junctions relative to goldfree junctions with evaporated counterelectrodes can be explained in terms of barrier shape modification, and not by proximity effect mechanisms. The performance of a DC SQUID based on these junctions is described

Tunneling in BP-MoS2 heterostructure

Science.gov (United States)

Liu, Xiaochi; Qu, Deshun; Kim, Changsik; Ahmed, Faisal; Yoo, Won Jong

Tunnel field effect transistor (TFET) is considered to be a leading option for achieving SS mV/dec. In this work, black phosphorus (BP) and molybdenum disulfide (MoS2) heterojunction devices are fabricated. We find that thin BP flake and MoS2 form normal p-n junctions, tunneling phenomena can be observed when BP thickness increases to certain level. PEO:CsClO4 is applied on the surface of the device together with a side gate electrode patterned together with source and drain electrodes. The Fermi level of MoS2 on top of BP layer can be modulated by the side gating, and this enables to vary the MoS2-BP tunnel diode property from off-state to on-state. Since tunneling is the working mechanism of MoS2-BP junction, and PEO:CsClO4\\ possesses ultra high dielectric constant and small equivalent oxide thickness (EOT), a low SS of 55 mV/dec is obtained from MoS2-BP TFET. This work was supported by the Global Research Laboratory and Global Frontier R&D Programs at the Center for Hybrid Interface Materials, both funded by the Ministry of Science, ICT & Future Planning via the National Research Foundation of Korea (NRF).

Enhancement in sensitivity of graphene-based zinc oxide assisted bimetallic surface plasmon resonance (SPR) biosensor

Science.gov (United States)

Kumar, Rajeev; Kushwaha, Angad S.; Srivastava, Monika; Mishra, H.; Srivastava, S. K.

2018-03-01

In the present communication, a highly sensitive surface plasmon resonance (SPR) biosensor with Kretschmann configuration having alternate layers, prism/zinc oxide/silver/gold/graphene/biomolecules (ss-DNA) is presented. The optimization of the proposed configuration has been accomplished by keeping the constant thickness of zinc oxide (32 nm), silver (32 nm), graphene (0.34 nm) layer and biomolecules (100 nm) for different values of gold layer thickness (1, 3 and 5 nm). The sensitivity of the proposed SPR biosensor has been demonstrated for a number of design parameters such as gold layer thickness, number of graphene layer, refractive index of biomolecules and the thickness of biomolecules layer. SPR biosensor with optimized geometry has greater sensitivity (66 deg/RIU) than the conventional (52 deg/RIU) as well as other graphene-based (53.2 deg/RIU) SPR biosensor. The effect of zinc oxide layer thickness on the sensitivity of SPR biosensor has also been analysed. From the analysis, it is found that the sensitivity increases significantly by increasing the thickness of zinc oxide layer. It means zinc oxide intermediate layer plays an important role to improve the sensitivity of the biosensor. The sensitivity of SPR biosensor also increases by increasing the number of graphene layer (upto nine layer).

Metal oxide targets produced by the polymer-assisted deposition method

Energy Technology Data Exchange (ETDEWEB)

Garcia, Mitch A., E-mail: mitch@berkeley.ed [Department of Chemistry, Room 446 Latimer Hall, University of California Berkeley, Berkeley, CA 94720-1460 (United States); Lawrence Berkeley National Laboratory, Berkeley, CA 94720 (United States); Ali, Mazhar N.; Chang, Noel N.; Parsons-Moss, T. [Department of Chemistry, Room 446 Latimer Hall, University of California Berkeley, Berkeley, CA 94720-1460 (United States); Lawrence Berkeley National Laboratory, Berkeley, CA 94720 (United States); Ashby, Paul D. [Lawrence Berkeley National Laboratory, Berkeley, CA 94720 (United States); Gates, Jacklyn M. [Department of Chemistry, Room 446 Latimer Hall, University of California Berkeley, Berkeley, CA 94720-1460 (United States); Lawrence Berkeley National Laboratory, Berkeley, CA 94720 (United States); Stavsetra, Liv [Lawrence Berkeley National Laboratory, Berkeley, CA 94720 (United States); Gregorich, Kenneth E.; Nitsche, Heino [Department of Chemistry, Room 446 Latimer Hall, University of California Berkeley, Berkeley, CA 94720-1460 (United States); Lawrence Berkeley National Laboratory, Berkeley, CA 94720 (United States)

2010-02-11

The polymer-assisted deposition (PAD) method was used to create crack-free homogenous metal oxide films for use as targets in nuclear science applications. Metal oxide films of europium, thulium, and hafnium were prepared as models for actinide oxides. Films produced by a single application of PAD were homogenous and uniform and ranged in thickness from 30 to 320 nm. Reapplication of the PAD method (six times) with a 10% by weight hafnium(IV) solution resulted in an equally homogeneous and uniform film with a total thickness of 600 nm.

Metal oxide targets produced by the polymer-assisted deposition method

International Nuclear Information System (INIS)

Garcia, Mitch A.; Ali, Mazhar N.; Chang, Noel N.; Parsons-Moss, T.; Ashby, Paul D.; Gates, Jacklyn M.; Stavsetra, Liv; Gregorich, Kenneth E.; Nitsche, Heino

2010-01-01

The polymer-assisted deposition (PAD) method was used to create crack-free homogenous metal oxide films for use as targets in nuclear science applications. Metal oxide films of europium, thulium, and hafnium were prepared as models for actinide oxides. Films produced by a single application of PAD were homogenous and uniform and ranged in thickness from 30 to 320 nm. Reapplication of the PAD method (six times) with a 10% by weight hafnium(IV) solution resulted in an equally homogeneous and uniform film with a total thickness of 600 nm.

High-performance micro-solid oxide fuel cells fabricated on nanoporous anodic aluminum oxide templates

Energy Technology Data Exchange (ETDEWEB)

Kwon, Chang-Woo; Kim, Hyun-Mi; Kim, Ki-Bum [WCUHybrid Materials Program, Department of Materials Science and Engineering, Seoul National University, 599 Gwanak-ro, Gwanak-gu, Seoul, 151-742 (Korea, Republic of); Son, Ji-Won; Lee, Jong-Ho; Lee, Hae-Weon [High Temperature Energy Materials Center, Korea Institute of Science and Technology, 39-1, Hawolgok-dong, Seongbuk-gu, Seoul, 136-791 (Korea, Republic of)

2011-03-22

Micro-solid oxide fuel cells ({mu}-SOFCs) are fabricated on nanoporous anodic aluminum oxide (AAO) templates with a cell structure composed of a 600-nm-thick AAO free-standing membrane embedded on a Si substrate, sputter-deposited Pt electrodes (cathode and anode) and an yttria-stabilized zirconia (YSZ) electrolyte deposited by pulsed laser deposition (PLD). Initially, the open circuit voltages (OCVs) of the AAO-supported {mu}-SOFCs are in the range of 0.05 V to 0.78 V, which is much lower than the ideal value, depending on the average pore size of the AAO template and the thickness of the YSZ electrolyte. Transmission electron microscopy (TEM) analysis reveals the formation of pinholes in the electrolyte layer that originate from the porous nature of the underlying AAO membrane. In order to clog these pinholes, a 20-nm thick Al{sub 2}O{sub 3} layer is deposited by atomic layer deposition (ALD) on top of the 300-nm thick YSZ layer and another 600-nm thick YSZ layer is deposited after removing the top intermittent Al{sub 2}O{sub 3} layer. Fuel cell devices fabricated in this way manifest OCVs of 1.02 V, and a maximum power density of 350 mW cm{sup -2} at 500 C. (Copyright copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Reagent-Free Electrophoretic Synthesis of Few-Atom-Thick Metal Oxide Nanosheets

DEFF Research Database (Denmark)

Hou, Chengyi; Zhang, Minwei; Zhang, Lili

2017-01-01

Engineering traditional materials into the new form of atomic and free-standing two-dimensional structures is of both fundamental interest and practical significance, but it is in general facing challenges especially for metal oxide semiconductors. We herein report an ultragreen method for the cost......-effective and fast preparation of atomic metal oxide nanosheets that can be further transformed into nanofilms. The method combines top-down building block synthesis and bottom-up electrophoretic assembly in water under ambient conditions, using only bulk metal and Milli-Q water without involving any additional...

Improvement of liver stiffness in patients with hepatitis C virus infection who received direct-acting antiviral therapy and achieved sustained virological response.

Science.gov (United States)

Tada, Toshifumi; Kumada, Takashi; Toyoda, Hidenori; Mizuno, Kazuyuki; Sone, Yasuhiro; Kataoka, Saki; Hashinokuchi, Shinichi

2017-12-01

There is insufficient research on whether direct-acting antiviral (DAA) therapy can improve liver fibrosis in patients with chronic hepatitis C virus (HCV). We evaluated sequential changes in liver stiffness using shear wave elastography in patients with HCV who received DAA therapy. A total of 210 patients with HCV who received daclatasvir and asunaprevir therapy and achieved sustained virological response (SVR) were analyzed. Liver stiffness, as evaluated by shear wave elastography, and laboratory data were assessed before treatment (baseline), at end of treatment (EOT), and at 24 weeks after EOT (SVR24). Alanine aminotransferase levels (ALT) decreased over time, and there were significant differences between baseline and EOT and between EOT and SVR24. Although platelet counts did not significantly differ between baseline and EOT, they increased significantly from EOT to SVR24. The median (interquartile range) liver stiffness values at baseline, EOT, and SVR24 were 10.2 (7.7-14.7), 8.8 (7.1-12.1), and 7.6 (6.3-10.3) kPa, respectively (P liver) and Fibrosis-4 index > 2.0 (n = 75), the liver stiffness values at baseline, EOT, and SVR24 were 9.6 (7.7-15.2), 9.2 (7.3-12.1), and 7.7 (6.3-10.1) kPa, respectively (P liver stiffness starts during the administration of DAAs in patients who achieve SVR, and this effect is particularly pronounced in patients with progressive liver fibrosis. © 2017 Journal of Gastroenterology and Hepatology Foundation and John Wiley & Sons Australia, Ltd.

Process-structure-property relationships of micron thick gadolinium oxide films deposited by reactive electron beam-physical vapor deposition (EB-PVD)

Science.gov (United States)

Grave, Daniel A.

Gadolinium oxide (Gd2O3) is an attractive material for solid state neutron detection due to gadolinium's high thermal neutron capture cross section. Development of neutron detectors based on Gd2 O3 requires sufficiently thick films to ensure neutron absorption. In this dissertation work, the process-structure-property relationships of micron thick Gd2O3 films deposited by reactive electron-beam physical vapor deposition (EB-PVD) were studied. Through a systematic design of experiments, fundamental studies were conducted to determine the effects of processing conditions such as deposition temperature, oxygen flow rate, deposition rate, and substrate material on Gd2O3 film crystallographic phase, texture, morphology, grain size, density, and surface roughness. Films deposited at high rates (> 5 A/s) were examined via x-ray diffraction (XRD) and Raman spectroscopy. Quantitative phase volume calculations were performed via a Rietveld refinement technique. All films deposited at high rates were found to be fully monoclinic or mixed cubic/monoclinic phase. Generally, increased deposition temperature and increased oxygen flow resulted in increased cubic phase volume. As film thickness increased, monoclinic phase volume increased. Grazing incidence x-ray diffraction (GIXRD) depth profiling analysis showed that cubic phase was only present under large incidence angle (large penetration depth) measurements, and after a certain point, only monoclinic phase was grown. This was confirmed by transmission electron microscopy (TEM) analysis with selected area diffraction (SAD). Based on this information, a large compressive stress was hypothesized to cause the formation of the monoclinic phase and this hypothesis was confirmed by demonstrating the existence of a stress induced phase transition. An experiment was designed to introduce compressive stress into the Gd2O 3 films via ion beam assisted deposition (IBAD). This allowed for systematic increase in compressive stress while

Oxidation of nano-reinforced polyolefins

International Nuclear Information System (INIS)

Gutierrez Castro, G.G.

2010-11-01

Nano-composite materials attract search due to their improvements on barrier properties by incorporating low level of nano-filler of 5%w. Nowadays, organically modified montmorillonite (MMT-O) is the most used filler due to its high aspect ratio which permits stronger clay/polymer interactions. If nano-reinforced materials are highly performing, the ways in which clay presence affects polyolefin durability have not being subject of a rigorous study, thus they are not yet clear. Our goal was to examine unstabilized clay polypropylene and unstabilized clay polyethylene nano composites to get a better comprehension of the clay effects on their thermo-oxidation process under low temperatures. The effects induced by a dual physic-chemical nature of the clay were explored. The problem was tackled from both experimental and theoretical point of views for degradation process not controlled and controlled by oxygen diffusion (homogenous and heterogeneous respectively). It seems that MMT-O speeds up oxidation. This phenomenon was modeled by adding a catalytic reaction between metallic particles initially present in the MMT-O and hydroperoxide groups (main responsible of oxidation). Regarding the oxygen permeability two situations were confronted: for the clay polypropylene system a decrease of 45% of oxygen permeability was measured. On the other hand, no variation was found for the polyethylene case. This effect was attributed to the fact that polyethylene nano-composite reached a blend morphology less developed than those of the polypropylene nano-composite. Kinetics and oxidation products profiles across the sample thickness were simulated for both systems by coupling oxidation reactions with oxygen diffusion equations. For the polyethylene case, the effects induced by oxidation on molar mass and crystalline morphology were also simulated. Finally, based on a structure-property relationship, simulations of mechanic modulus profiles were performed for the heterogeneous

Oxidation kinetics of zircaloy-4 in the temperature range correspondent to alpha phase

International Nuclear Information System (INIS)

Medeiros, L.F.

1975-12-01

Oxidation kinetics of Zry-4 in the alpha phase is isothermally studied in the temperature range from 600 0 C to 800 0 C, by continuous and discontinuous gravimetric methods. The total mass gain during the oxidation takes place by two distinct ways: oxide formation and solid solution formation. The first one has been studied by microscopy: the latter by microhardness. The oxygen diffusion coefficients in the zirconium are experimentally determined by microhardness measurements and are compared with those obtained by the oxide layer thickness and by oxygen mass in the oxide. The oxygen diffusion coefficients in the oxide are obtained too by oxide layer thickness and by oxygen diffusivities in the alpha phase and compared with literature. (author)

Evaluation of the nanomechanical properties of vanadium and native oxide vanadium thin films prepared by RF magnetron sputtering

International Nuclear Information System (INIS)

Mamun, M.A.; Zhang, K.; Baumgart, H.; Elmustafa, A.A.

2015-01-01

Graphical abstract: - Highlights: • V films of 50, 75, 100 nm thickness were deposited on Si by RF magnetron sputtering. • We studied structural/mechanical properties by XRD, FE-SEM, AFM, and nanoindentation. • The hardness increased from 9.0 to 14.0 GPa for 100 to 50 nm. • The modulus showed no correlation with thickness or native oxide formation. • Native oxide formation resulted in grain enlargement and roughness reduction. - Abstract: Polycrystalline vanadium thin films of 50, 75, and 100 nm thickness were deposited by magnetron sputtering of a vanadium metal target of 2 inch diameter with 99.9% purity on native oxide covered Si substrates. One set of the fabricated samples were kept in moisture free environment and the other set was exposed to ambient air at room temperature for a long period of time that resulted in formation of native oxide prior to testing. The crystal structure and phase purity of the vanadium and the oxidized vanadium thin films were characterized by X-ray diffraction (XRD). The XRD results yield a preferential (1 1 0), and (2 0 0) orientation of the polycrystalline V films and (0 0 4) vanadium oxide (V 3 O 7 ). The vanadium films thickness were verified using field emission scanning electron microscopy and the films surface morphologies were inspected using atomic force microscopy (AFM). AFM images reveal surface roughness was observed to increase with increasing film thickness and also subsequent to oxidation at room temperature. The nanomechanical properties were measured by nanoindentation to evaluate the modulus and hardness of the vanadium and the oxidized vanadium thin films. The elastic modulus of the vanadium and the oxidized vanadium films was estimated as 150 GPa at 30% film thickness and the elastic modulus of the bulk vanadium target is estimated as 135 GPa. The measured hardness of the vanadium films at 30% film thickness varies between 9 and 14 GPa for the 100 and 50 nm films, respectively, exhibiting size effects

Titanium Oxide/Platinum Catalysis: Charge Transfer from a Titanium Oxide Support Controls Activity and Selectivity in Methanol Oxidation on Platinum

KAUST Repository

Hervier, Antoine

2011-11-24

Platinum films of 1 nm thickness were deposited by electron beam evaporation onto 100 nm thick titanium oxide films (TiOx) with variable oxygen vacancy concentrations and fluorine (F) doping. Methanol oxidation on the platinum films produced formaldehyde, methyl formate, and carbon dioxide. F-doped samples demonstrated significantly higher activity for methanol oxidation when the TiOx was stoichiometric (TiO 2), but lower activity when it was nonstoichiometric (TiO 1.7 and TiO1.9). These results correlate with the chemical behavior of the same types of catalysts in CO oxidation. Fluorine doping of stoichiometric TiO2 also increased selectivity toward partial oxidation of methanol to formaldehyde and methyl formate, but had an opposite effect in the case of nonstoichiometric TiOx. Introduction of oxygen vacancies and fluorine doping both increased the conductivity of the TiO x film. For oxygen vacancies, this occurred by the formation of a conduction channel in the band gap, whereas in the case of fluorine doping, F acted as an n-type donor, forming a conduction channel at the bottom of the conduction band, about 0.5-1.0 eV higher in energy. The higher energy electrons in F-doped stoichiometric TiOx led to higher turnover rates and increased selectivity toward partial oxidation of methanol. This correlation between electronic structure and turnover rate and selectivity indicates that the ability of the support to transfer charges to surface species controls in part the activity and selectivity of the reaction. © 2011 American Chemical Society.

Determination of surface oxide compositions on Alloy 600 using Rutherford backscattering

International Nuclear Information System (INIS)

Hanson, A.L.; Kraner, H.W.

1984-01-01

The surface composition of oxides formed on Alloy 600 under conditions similar to those in the primary side of PWR heat exchangers has been studied as a function of potential using Rutherford backscattering and proton inelastic scattering. Electropolished samples of Alloy 600 were exposed at several potentials to a solution of 0.18M H 3 BO 3 (2000ppm B) with 0.21mM LiOH (1.5ppm Li) at 300 0 C for 450 hours. The potentials relative to an internal hydrogen electrode ranged from -.09 to 750 mV. RBS analysis showed little or no oxide formation on samples exposed at 0 mV. Above 0 mV oxide layers formed whose thicknesses increased with potential. In addition the RBS showed a significantly enhanced concentration of aluminum and silicon in oxide. Both the oxygen and the sum of the aluminum and silicon content appeared to maintain a fixed surface concentration independent of the oxide thickness. Boron and lithium concentrations were analyzed with proton inelastic scattering. No lithium was detected in any sample. The boron concentration was found to follow the thickness of the oxide

Determination of surface oxide compositions on Alloy 600 using Rutherford backscattering

International Nuclear Information System (INIS)

Hanson, A.L.; Isaacs, H.S.; Kraner, H.W.

1984-01-01

The surface composition of oxides formed on Alloy 600 under conditions similar to those in the primary side of PWR heat exchangers has been studied as a function of potential using Rutherford backscattering and proton inelastic scattering. Electropolished samples of Alloy 600 were exposed at several potentials to a solution of 0.18M H 3 BO 3 (2000 ppM B) with 0.28M LiOH (1.4 ppM Li) at 300 0 C for 450 hours. The potentials relative to an internal hydrogen electrode ranged from -.09 to 750 mV. RBS analysis showed little or no oxide formation on samples exposed at 0 mV. Above 0 mV oxide layers formed whose thicknesses increased with potential. In addition the RBS showed a significantly enhanced concentration of aluminum and silicon in oxide. Both the oxygen and the sum of the aluminum and silicon content appeared to maintain a fixed surface concentration independent of the oxide thickness. Boron and lithium concentration were analyzed with proton inelastic scattering. No lithium was found in any sample. The boron concentration was found to follow the thickness of the oxide

Structural and interfacial characteristics of thin (2 films grown by electron cyclotron resonance plasma oxidation on [100] Si substrates

International Nuclear Information System (INIS)

Nguyen, T.D.; Carl, D.A.; Hess, D.W.; Lieberman, M.A.; Gronsky, R.

1991-04-01

The feasibility of fabricating ultra-thin SiO 2 films on the order of a few nanometer thickness has been demonstrated. SiO 2 thin films of approximately 7 nm thickness have been produced by ion flux-controlled Electron Cyclotron Resonance plasma oxidation at low temperature on [100] Si substrates, in reproducible fashion. Electrical measurements of these films indicate that they have characteristics comparable to those of thermally grown oxides. The thickness of the films was determined by ellipsometry, and further confirmed by cross-sectional High-Resolution Transmission Electron Microscopy. Comparison between the ECR and the thermal oxide films shows that the ECR films are uniform and continuous over at least a few microns in lateral direction, similar to the thermal oxide films grown at comparable thickness. In addition, HRTEM images reveal a thin (1--1.5 nm) crystalline interfacial layer between the ECR film and the [100] substrate. Thinner oxide films of approximately 5 nm thickness have also been attempted, but so far have resulted in nonuniform coverage. Reproducibility at this thickness is difficult to achieve

Functionalization of 2D macroporous silicon under the high-pressure oxidation

Science.gov (United States)

Karachevtseva, L.; Kartel, M.; Kladko, V.; Gudymenko, O.; Bo, Wang; Bratus, V.; Lytvynenko, O.; Onyshchenko, V.; Stronska, O.

2018-03-01

Addition functionalization after high-pressure oxidation of 2D macroporous silicon structures is evaluated. X-ray diffractometry indicates formation of orthorhombic SiO2 phase on macroporous silicon at oxide thickness of 800-1200 nm due to cylindrical symmetry of macropores and high thermal expansion coefficient of SiO2. Pb center concentration grows with the splitting energy of LO- and TO-phonons and SiO2 thickness in oxidized macroporous silicon structures. This increase EPR signal amplitude and GHz radiation absorption and is promising for development of high-frequency devices and electronically controlled elements.

Vacuum-arc chromium coatings for Zr-1%Nb alloy protection against high-temperature oxidation in air

International Nuclear Information System (INIS)

Kuprin, A.S.; Belous, V.A.; Bryk, V.V.; Vasilenko, R.L.; Voevodin, V.N.; Ovcharenko, V.D.; Tolmacheva, G.N.; Kolodij, I.V.; Lunev, V.M.; Klimenko, I.O.

2015-01-01

The effect of vacuum-arc Cr coatings on the alloy E110 resistance to the oxidation in air at temperatures 1020 and 1100 deg C for 3600 s has been investigated. The methods of scanning electron microscope, X-ray analysis and nanoindentation were used to determine the thickness, phase, mechanical properties of coatings and oxide layers. The results show that the chromium coating can effectively protect fuel tubes against high-temperature oxidation in air for one hour. In the coating during oxidation at T = 1100 deg C a Cr 2 O 3 oxide layer of 5 μm thickness is formed preventing further oxygen penetration into the coating, and thus the tube shape is conserved. Under similar test conditions the oxidation of uncoated tubes with formation of a porous monocline oxide of ZrO 2 of a thickness more than ≥ 250 μm is observed, then the deformation and cracking of samples occur and the oxide layer breaks away

Native oxide formation on pentagonal copper nanowires: A TEM study

Science.gov (United States)

Hajimammadov, Rashad; Mohl, Melinda; Kordas, Krisztian

2018-06-01

Hydrothermally synthesized copper nanowires were allowed to oxidize in air at room temperature and 30% constant humidity for the period of 22 days. The growth of native oxide layer was followed up by high-resolution transmission electron microscopy and diffraction to reveal and understand the kinetics of the oxidation process. Copper oxides appear in the form of differently oriented crystalline phases around the metallic core as a shell-like layer (Cu2O) and as nanoscopic islands (CuO) on the top of that. Time dependent oxide thickness data suggests that oxidation follows the field-assisted growth model at the beginning of the process, as practically immediately an oxide layer of ∼2.8 nm thickness develops on the surface. However, after this initial rapid growth, the local field attenuates and the classical parabolic diffusion limited growth plays the main role in the oxidation. Because of the single crystal facets on the side surface of penta-twinned Cu nanowires, the oxidation rate in the diffusion limited regime is lower than in polycrystalline films.

Numerical predictions of dry oxidation of iron and low-carbon steel at moderately elevated temperatures

International Nuclear Information System (INIS)

Henshall, G.A.

1996-11-01

Wrought and cast low-carbon steel are candidate materials for the thick (e.g. 10 cm) outer barrier of nuclear waste packages being considered for use in the potential geological repository at Yucca Mountain. Dry oxidation is possible at the moderately elevated temperatures expected at the container surface (323-533 K or 50-260 C). Numerical predictions of dry oxidation damage were made based on experimental data for iron and low-carbon steel and parabolic oxidation theory. The Forward Euler method was implemented to integrate the parabolic rate law for arbitrary, complex temperature histories. Assuming growth of a defect-free, adherent oxide, the surface penetration of a low-carbon steel barrier following 5000 years of exposure to a severe, but repository-relevant, temperature history is predicted to be only about 0.127 mm, less than 0.13% of the expected container thickness of 10 cm. Allowing the oxide to spall upon reaching a critical thickness increases the predicted metal penetration values, but degradation is still computed to be negligible. Thus, dry oxidation is not expected to significantly degrade the performance of thick, corrosion allowance barriers constructed of low-carbon steel

Oxidation of nano-sized aluminum powders

International Nuclear Information System (INIS)

Vorozhtsov, A.B.; Lerner, M.; Rodkevich, N.; Nie, H.; Abraham, A.; Schoenitz, M.; Dreizin, E.L.

2016-01-01

Highlights: • Weight gain measured in TG oxidation experiments was split between particles of different sizes. • Reaction kinetics obtained by isoconversion explicitly accounting for the effect of size distribution. • Activation energy is obtained as a function of oxide thickness for growth of amorphous alumina. • Oxidation mechanism for nanopowders remains the same as for coarser aluminum powders. - Abstract: Oxidation of aluminum nanopowders obtained by electro-exploded wires is studied. Particle size distributions are obtained from transmission electron microscopy (TEM) images. Thermo-gravimetric (TG) experiments are complemented by TEM and XRD studies of partially oxidized particles. Qualitatively, oxidation follows the mechanism developed for coarser aluminum powder and resulting in formation of hollow oxide shells. Sintering of particles is also observed. The TG results are processed to account explicitly for the particle size distribution and spherical shapes, so that oxidation of particles of different sizes is characterized. The apparent activation energy is obtained as a function of the reaction progress using model-free isoconversion processing of experimental data. A complete phenomenological oxidation model is then proposed assuming a spherically symmetric geometry. The oxidation kinetics of aluminum powder is shown to be unaffected by particle sizes reduced down to tens of nm. The apparent activation energy describing growth of amorphous alumina is increasing at the very early stages of oxidation. The higher activation energy is likely associated with an increasing homogeneity in the growing amorphous oxide layer, initially containing multiple defects and imperfections. The trends describing changes in both activation energy and pre-exponent of the growing amorphous oxide are useful for predicting ignition delays of aluminum particles. The kinetic trends describing activation energies and pre-exponents in a broader range of the oxide

Bandgap Engineering of InP QDs Through Shell Thickness and Composition

Energy Technology Data Exchange (ETDEWEB)

Dennis, Allison M. [Los Alamos National Laboratory; Mangum, Benjamin D. [Los Alamos National Laboratory; Piryatinski, Andrei [Los Alamos National Laboratory; Park, Young-Shin [Los Alamos National Laboratory; Htoon, Han [Los Alamos National Laboratory; Hollingsworth, Jennifer A. [Los Alamos National Laboratory

2012-06-21

Fields as diverse as biological imaging and telecommunications utilize the unique photophysical and electronic properties of nanocrystal quantum dots (NQDs). The development of new NQD compositions promises material properties optimized for specific applications, while addressing material toxicity. Indium phosphide (InP) offers a 'green' alternative to the traditional cadmium-based NQDs, but suffers from extreme susceptibility to oxidation. Coating InP cores with more stable shell materials significantly improves nanocrystal resistance to oxidation and photostability. We have investigated several new InP-based core-shell compositions, correlating our results with theoretical predictions of their optical and electronic properties. Specifically, we can tailor the InP core-shell QDs to a type-I, quasi-type-II, or type-II bandgap structure with emission wavelengths ranging from 500-1300 nm depending on the shell material used (ZnS, ZnSe, CdS, or CdSe) and the thickness of the shell. Single molecule microscopy assessments of photobleaching and blinking are used to correlate NQD properties with shell thickness.

Study of buffer layer thickness on bulk heterojunction solar cell.

Science.gov (United States)

Noh, Seunguk; Suman, C K; Lee, Donggu; Kim, Seohee; Lee, Changhee

2010-10-01

We studied the effect of the buffer layer (molybdenum-oxide (MoO3)) thickness on the performance of organic solar cell based on blends of poly(3-hexylthiophene) (P3HT) and [6,6]-phenyl-C61 butyric acid methyl ester fullerene derivative (PCBM). The thickness of MoO3 was varied from 1 nm to 30 nm for optimization of device performance. The photocurrent-voltage and impedance spectroscopy were measured under dark and AM1.5G solar simulated illumination of 100 mW/cm2 for exploring the role of the buffer layer thickness on carrier collection at an anode. The MoO3 thickness of the optimized device (efficiency approximately 3.7%) was found to be in the range of 5 approximately 10 nm. The short-circuit current and the shunt resistance decrease gradually for thicker MoO3 layer over 5 nm. The device can be modeled as the combination of three RC parallel circuits (each one for the active layer, buffer layer and interface between the buffer layer and the active layer) in series with contact resistance (Rs approximately 60 ohm).

Design of Thermal Barrier Coatings Thickness for Gas Turbine Blade Based on Finite Element Analysis

OpenAIRE

Li, Biao; Fan, Xueling; Li, Dingjun; Jiang, Peng

2017-01-01

Thermal barrier coatings (TBCs) are deposited on the turbine blade to reduce the temperature of underlying substrate, as well as providing protection against the oxidation and hot corrosion from high temperature gas. Optimal ceramic top-coat thickness distribution on the blade can improve the performance and efficiency of the coatings. Design of the coatings thickness is a multiobjective optimization problem due to the conflicts among objectives of high thermal insulation performance, long op...

Wire winding increases lifetime of oxide coated cathodes

Science.gov (United States)

Kerslake, W.; Vargo, D.

1965-01-01

Refractory-metal heater base wound with a thin refractory metal wire increases the longevity of oxide-coated cathodes. The wire-wound unit is impregnated with the required thickness of metal oxide. This cathode is useful in magnetohydrodynamic systems and in electron tubes.

Characterization of low-temperature microwave loss of thin aluminum oxide formed by plasma oxidation

Energy Technology Data Exchange (ETDEWEB)

Deng, Chunqing, E-mail: cdeng@uwaterloo.ca; Otto, M.; Lupascu, A., E-mail: alupascu@uwaterloo.ca [Institute for Quantum Computing, Department of Physics and Astronomy, and Waterloo Institute for Nanotechnology, University of Waterloo, Waterloo, Ontario N2L 3G1 (Canada)

2014-01-27

We report on the characterization of microwave loss of thin aluminum oxide films at low temperatures using superconducting lumped resonators. The oxide films are fabricated using plasma oxidation of aluminum and have a thickness of 5 nm. We measure the dielectric loss versus microwave power for resonators with frequencies in the GHz range at temperatures from 54 to 303 mK. The power and temperature dependence of the loss are consistent with the tunneling two-level system theory. These results are relevant to understanding decoherence in superconducting quantum devices. The obtained oxide films are thin and robust, making them suitable for capacitors in compact microwave resonators.

Non-contact Measurement of Remaining Thickness of Corroding Superheater Tubes. Phase 2

Energy Technology Data Exchange (ETDEWEB)

Borggreen, Kjeld; Storesund, Jan

2007-12-15

The Electro Magnetic Acoustic Transducer (EMAT) is a contactless thickness gauge for detection of corrosion on superheater tubes; it candidates as substitute for conventional manually operated contact UT transducers. It is the aim of the project to demonstrate the usefulness of two simple EMAT systems, Panametrics and Sonatest, for fast and reliable tube thickness inspections in difficult-to-access superheater sections. The present Phase 2 of the project involves testing of the systems on real compact superheaters in remote operation with the help of a mechanical manipulator designed and built for the purpose. The results are the following: - Both EMAT systems work well when tested in the field during handheld operation on tubes with a moderate thick layer of corrosion products and ash. The practical obtainable speed of cross-panel inspection of easily accessible panels is approximately 6 tubes per minute (6 thickness readings per minute). - The Sonatest system works well when tested in the field during remote operation on heavily corroded superheater tubes with thick ash layer. The Panametrics system was not found suitable for this type of field work. - The mechanical manipulator works well for cross-panel inspection of difficult-to-access superheater sections independent of the tube dimensions and the free space between the panels. In its present design it needs few improvements. - The practical obtainable speed of cross-panel inspection is 3 tubes per minute (3 thickness readings per minute). This speed is limited by the detection rate of the EMAT system and not by the travelling speed of the probe. - Scanning of tubes along their axis was never attempted, because the EMAT instruments were not capable of collecting data coming as a continuous stream. - It cannot be judged from visual alone and hardly from the service data, if a tube or a panel can be inspected by the magnetostrictive EMAT method or not. - The main contribution to failure of the EMAT inspection

Corium Oxidation at Temperatures Above 2000 K

International Nuclear Information System (INIS)

Hagrman, Donald L.; Rempe, Joy L.

2001-01-01

A mechanistic model, based on a quasi-equilibrium analysis of oxidation reactions, is proposed for predicting high-temperature corium oxidation. The analysis suggests that oxide forming on the surface of corium containing uranium, zirconium, and iron is similar to the oxides formed on zirconium and uranium as long as there is a small percentage of unoxidized zirconium or uranium in the metallic phase. This is because of the higher affinity of zirconium and uranium for oxygen. Hence, oxidation rates and heat production rates are similar to (U,Zr) compounds until nearly all the uranium and zirconium in the corium oxidizes. Oxidation rates after this point are predicted to be similar to those implied by the oxide thickness present when the forming oxide ceases to be protective, and heat generation rates should be similar to those implied by iron oxidation, i.e., ∼4% of the zirconium oxidation heating rate.The maximum atomic ratio of unoxidized iron to unoxidized liquid zirconium plus uranium for the formation of a solid protective oxide below 2800 K is estimated for a temperature, T (in Kelvin), as follows:(unoxidized iron)/(unoxidized zirconium + turanium) = (1/28){5.7/exp[-(147 061 + 12.08T log(T) - 61.03T - 0.000555T 2 /1.986T)]} 1/2 .As long as this limit is not exceeded, either zirconium or uranium metal oxidation rates and heating describe the corium oxidation rate. If this limit is exceeded, diffusion of steam to the corium surface will limit the oxidation rate, and linear time-dependent growth of a nonprotective, mostly FeO, layer will occur below the protective (Zr,U) O 2 scale. When this happens, the oxidation should be at the constant rate given by the thickness of the protective layer. Heat generation should be similar to that of iron oxidation

Corium Oxidation at Temperatures Above 2000 K

Energy Technology Data Exchange (ETDEWEB)

Hagrman, Donald Lee; Rempe, Joy Lynn

2001-02-01

A mechanistic model, based on a quasi-equilibrium analysis of oxidation reactions, is proposed for predicting high-temperature corium oxidation. The analysis suggests that oxide forming on the surface of corium containing uranium, zirconium, and iron is similar to the oxides formed on zirconium and uranium as long as there is a small percentage of unoxidized zirconium or uranium in the metallic phase. This is because of the higher affinity of zirconium and uranium for oxygen. Hence, oxidation rates and heat production rates are similar to (U,Zr) compounds until nearly all the uranium and zirconium in the corium oxidizes. Oxidation rates after this point are predicted to be similar to those implied by the oxide thickness present when the forming oxide ceases to be protective, and heat generation rates should be similar to those implied by iron oxidation, i.e., ~4% of the zirconium oxidation heating rate. The maximum atomic ratio of unoxidized iron to unoxidized liquid zirconium plus uranium for the formation of a solid protective oxide below 2800 K is estimated for a temperature, T (in Kelvin), as follows: (unoxidized iron)/(unoxidized zirconium + turanium) = (1/28){5.7/exp[-(147 061 + 12.08T log(T) - 61.03T - 0.000555T2/1.986T)]}1/2. As long as this limit is not exceeded, either zirconium or uranium metal oxidation rates and heating describe the corium oxidation rate. If this limit is exceeded, diffusion of steam to the corium surface will limit the oxidation rate, and linear time-dependent growth of a nonprotective, mostly FeO, layer will occur below the protective (Zr,U) O2 scale. When this happens, the oxidation should be at the constant rate given by the thickness of the protective layer. Heat generation should be similar to that of iron oxidation.

A critical view into pupils’ experience of education outside the classroom and well-being

DEFF Research Database (Denmark)

Jensen, Anne Holm; Bølling, Mads; Nielsen, Glen

2016-01-01

Education outside of classroom (EOtC) is characterized as compulsory school activities taking place outside the school buildings as a supplement to classroom teaching to provide engaging and varied teaching. Previous research indicates that EOtC can have a positive impact on pupils’ social and ac...... to reduced well-being, which could also count for academically strong pupils seeing EOtC as a distraction or waste of time....

Effect of thickness on structural and electrical properties of Al-doped ZnO films

Energy Technology Data Exchange (ETDEWEB)

Garcés, F.A., E-mail: felipe.garces@santafe-conicet.gov.ar [Instituto de Física del Litoral (CONICET-UNL), Güemes 3450, Santa Fe S3000GLN (Argentina); Budini, N. [Instituto de Física del Litoral (CONICET-UNL), Güemes 3450, Santa Fe S3000GLN (Argentina); Arce, R.D.; Schmidt, J.A. [Instituto de Física del Litoral (CONICET-UNL), Güemes 3450, Santa Fe S3000GLN (Argentina); Facultad de Ingeniería Química, Universidad Nacional del Litoral, Santiago del Estero 2829, Santa Fe S3000AOM (Argentina)

2015-01-01

In this work, we have investigated the influence of thickness on structural and electrical properties of Al-doped ZnO films. Transparent conducting oxide films were grown by the spray pyrolysis technique from precursors prepared via the sol–gel method. We determined the structural properties of the films by performing X-ray diffraction and mosaicity measurements, which evidenced an increase of disorder and inhomogeneity between crystalline domains as the films thickened. This behavior was contrasted with results obtained from electrical measurements and was attributed to plastic deformation of the films as their thickness increased. As a result, the carrier mobility, the optical gap and the activation energy are affected due to emerging grain boundaries and a higher degree of disorder. - Highlights: • Al-doped ZnO thin films on glass with different thicknesses • Film thickness affects the morphological and electrical properties. • Increasing time deposition allows modification of resistivity and Hall mobility. • Mosaicity between crystalline domains increases with film thickness.

Effect of thickness on structural and electrical properties of Al-doped ZnO films

International Nuclear Information System (INIS)

Garcés, F.A.; Budini, N.; Arce, R.D.; Schmidt, J.A.

2015-01-01

In this work, we have investigated the influence of thickness on structural and electrical properties of Al-doped ZnO films. Transparent conducting oxide films were grown by the spray pyrolysis technique from precursors prepared via the sol–gel method. We determined the structural properties of the films by performing X-ray diffraction and mosaicity measurements, which evidenced an increase of disorder and inhomogeneity between crystalline domains as the films thickened. This behavior was contrasted with results obtained from electrical measurements and was attributed to plastic deformation of the films as their thickness increased. As a result, the carrier mobility, the optical gap and the activation energy are affected due to emerging grain boundaries and a higher degree of disorder. - Highlights: • Al-doped ZnO thin films on glass with different thicknesses • Film thickness affects the morphological and electrical properties. • Increasing time deposition allows modification of resistivity and Hall mobility. • Mosaicity between crystalline domains increases with film thickness

Effect of layer thickness on the properties of nickel thermal sprayed steel

Energy Technology Data Exchange (ETDEWEB)

Nurisna, Zuhri, E-mail: zuhri-nurisna@yahoo.co.id; Triyono,, E-mail: triyonomesin@uns.ac.id; Muhayat, Nurul, E-mail: nurulmuhayat@staff.uns.ac.id; Wijayanta, Agung Tri, E-mail: agungtw@uns.ac.id [Department of Mechanical Engineering, Sebelas Maret University, Jl. Jr. Sutami 36 A, Surakarta (Indonesia)

2016-03-29

Thermal arc spray nickel coating is widely used for decorative and functional applications, by improving corrosion resistance, wear resistance, heat resistence or by modifying other properties of the coated materials. There are several properties have been studied. Layer thickness of nickel thermal sprayed steel may be make harder the substrate surface. In this study, the effect of layer thickness of nickel thermal sprayed steel has been investigated. The rectangular substrate specimens were coated by Ni–5 wt.% Al using wire arc spray method. The thickness of coating layers were in range from 0.4 to 1.0 mm. Different thickness of coating layers were conducted to investigate their effect on hardness and morphology. The coating layer was examined by using microvickers and scanning electron microscope with EDX attachment. Generally, the hardness at the interface increased with increasing thickness of coating layers for all specimens due to higher heat input during spraying process. Morphology analysis result that during spraying process aluminum would react with surrounding oxygen and form aluminum oxide at outer surface of splat. Moreover, porosity was formed in coating layers. However, presence porosity is not related to thickness of coating material. The thicker coating layer resulted highesr of hardness and bond strength.

High-temperature oxidation kinetics of sponge-based E110 cladding alloy

Science.gov (United States)

Yan, Yong; Garrison, Benton E.; Howell, Mike; Bell, Gary L.

2018-02-01

Two-sided oxidation experiments were recently conducted at 900°C-1200 °C in flowing steam with samples of sponge-based Zr-1Nb alloy E110. Although the old electrolytic E110 tubing exhibited a high degree of susceptibility to nodular corrosion and experienced breakaway oxidation rates in a relatively short time, the new sponge-based E110 demonstrated steam oxidation behavior comparable to Zircaloy-4. Sample weight gain and oxide layer thickness measurements were performed on oxidized E110 specimens and compared to oxygen pickup and oxide layer thickness calculations using the Cathcart-Pawel correlation. Our study shows that the sponge-based E110 follows the parabolic law at temperatures above 1015 °C. At or below 1015 °C, the oxidation rate was very low when compared to Zircaloy-4 and can be represented by a cubic expression. No breakaway oxidation was observed at 1000 °C for oxidation times up to 10,000 s. Arrhenius expressions are given to describe the parabolic rate constants at temperatures above 1015 °C and cubic rate constants are provided for temperatures below 1015 °C. The weight gains calculated by our equations are in excellent agreement with the measured sample weight gains at all test temperatures. In addition to the as-fabricated E110 cladding sample, prehydrided E110 cladding with hydrogen concentrations in the 100-150 wppm range was also investigated. The effect of hydrogen content on sponge-based E110 oxidation kinetics was minimal. No significant difference was found between as-fabricated and hydrided samples with regard to oxygen pickup and oxide layer thickness for hydrogen contents below 150 wppm.

Electrochemical behavior for a reduction of uranium oxide in a LiCl-Li2O molten salt with an integrated cathode assembly

International Nuclear Information System (INIS)

Park, Sung Bin; Park, Byung Heung; Seo, Chung Seok; Jung, Ki Jung; Park, Seong Won

2005-01-01

Electrolytic reduction of uranium oxide to uranium metal was studied in a LiCl-Li 2 O molten salt system. The reduction mechanism of the uranium oxide to a uranium metal has been studied by means of a cyclic voltammetry. Effects of the layer thickness of the uranium oxide and the thickness of the MgO on the overpotential of the cathode and the anode were investigated by means of a chronopotentiometry. From the cyclic voltamograms, the decomposition potentials of the metal oxides are the determining factors for the mechanism of the reduction of the uranium oxide in a Li Cl-3 wt% Li 2 O molten salt and the two mechanisms of the electrolytic reduction were considered with regards to the applied cathode potential. In the chronopotentiograms, the exchange current and the transfer coefficient based on the Tafel behavior were obtained with regard to the layer thickness of the uranium oxide which is loaded into the porous MgO membrane and the thickness of the porous MgO membrane. The maximum allowable currents for the changes of the layer thickness of the uranium oxide and the thickness of the MgO membrane were also obtained from the limiting potential which is the decomposition potential of LiCl

Rheology and microstructure of dilute graphene oxide suspension

International Nuclear Information System (INIS)

Tesfai, Waka; Singh, Pawan; Shatilla, Youssef; Iqbal, Muhammad Z.; Abdala, Ahmed A.

2013-01-01

Graphene and graphene oxide are potential candidates as nanofluids for thermal management applications. Here, we investigate the rheological properties and intrinsic viscosity of aqueous suspension of graphene and use the measured intrinsic viscosity to determine the aspect ratio of graphene oxide. Dilute suspension of graphene oxide (0.05 to 0.5 mg/mL) exhibits a shear thinning behavior at low shear rates followed by a shear-independent region that starts at shear rate between 5 and 100/s depending on the concentration. This shear thinning behavior becomes more pronounced with the increase of particle loading. Moreover, AFM imaging of the dried graphene oxide indicates the evolution of irregular and thin low fractal aggregates of 0.3–1.8 nm thickness at lower concentrations to oblate compact structures of 1–18 nm thickness of nanosheets at higher concentration. These observations elucidate the microstructure growth mechanisms of graphene oxide in multiphase systems, which are important for nanofluids applications and for dispersing graphene and graphene oxide in composite materials. The suspension has a very high intrinsic viscosity of 1661 due to the high graphene oxide aspect ratio. Based on this intrinsic viscosity, we predict graphene oxide aspect ratio of 2445. While the classical Einstein and Batchelor models underestimate the relative viscosity of graphene oxide suspension, Krieger–Dougherty prediction is in a good agreement with the experimental measurement

Oxidation kinetics of Si and SiGe by dry rapid thermal oxidation, in-situ steam generation oxidation and dry furnace oxidation

Science.gov (United States)

Rozé, Fabien; Gourhant, Olivier; Blanquet, Elisabeth; Bertin, François; Juhel, Marc; Abbate, Francesco; Pribat, Clément; Duru, Romain

2017-06-01

The fabrication of ultrathin compressively strained SiGe-On-Insulator layers by the condensation technique is likely a key milestone towards low-power and high performances FD-SOI logic devices. However, the SiGe condensation technique still requires challenges to be solved for an optimized use in an industrial environment. SiGe oxidation kinetics, upon which the condensation technique is founded, has still not reached a consensus in spite of various studies which gave insights into the matter. This paper aims to bridge the gaps between these studies by covering various oxidation processes relevant to today's technological needs with a new and quantitative analysis methodology. We thus address oxidation kinetics of SiGe with three Ge concentrations (0%, 10%, and 30%) by means of dry rapid thermal oxidation, in-situ steam generation oxidation, and dry furnace oxidation. Oxide thicknesses in the 50 Å to 150 Å range grown with oxidation temperatures between 850 and 1100 °C were targeted. The present work shows first that for all investigated processes, oxidation follows a parabolic regime even for thin oxides, which indicates a diffusion-limited oxidation regime. We also observe that, for all investigated processes, the SiGe oxidation rate is systematically higher than that of Si. The amplitude of the variation of oxidation kinetics of SiGe with respect to Si is found to be strongly dependent on the process type. Second, a new quantitative analysis methodology of oxidation kinetics is introduced. This methodology allows us to highlight the dependence of oxidation kinetics on the Ge concentration at the oxidation interface, which is modulated by the pile-up mechanism. Our results show that the oxidation rate increases with the Ge concentration at the oxidation interface.

Thin Solid Oxide Cell

DEFF Research Database (Denmark)

2010-01-01

The present invention relates to a thin and in principle unsupported solid oxide cell, comprising at least a porous anode layer, an electrolyte layer and a porous cathode layer, wherein the anode layer and the cathode layer comprise an electrolyte material, at least one metal and a catalyst...... material, and wherein the overall thickness of the thin reversible cell is about 150 [mu]m or less, and to a method for producing same. The present invention also relates to a thin and in principle unsupported solid oxide cell, comprising at least a porous anode layer, an electrolyte layer and a porous...... cathode layer, wherein the anode layer and the cathode layer comprise an electrolyte material and a catalyst material, wherein the electrolyte material is doper zirconia, and wherein the overall thickness of the thin reversible cell is about 150 [mu]m or less, and to a method for producing same...

Changes in Nitric Oxide Level and Thickness Index of Synovial Fluid ...

African Journals Online (AJOL)

patients after intra-articular injection of sodium hyaluronate, while the effect is insignificant in severe patients. Thus, sodium hyaluronate can effectively improve nitric oxide levels in synovial fluid, reduce ..... Modern Med Health, 2014; 1:.

Realistic reflectance spectrum of thin films covering a transparent optically thick substrate

Energy Technology Data Exchange (ETDEWEB)

Cesaria, M., E-mail: maura.cesaria@le.infn.it; Caricato, A. P.; Martino, M. [Department of Mathematics and Physics “Ennio De Giorgi,” University of Salento, Via Arnesano, I-73100 Lecce (Italy)

2014-07-21

A spectrophotometric strategy is presented and discussed for calculating realistically the reflectance spectrum of an absorbing film deposited over a thick transparent or semi-transparent substrate. The developed route exploits simple mathematics, has wide range of applicability (high-to-weak absorption regions and thick-to-ultrathin films), rules out numerical and curve-fitting procedures as well as model-functions, inherently accounts for the non-measurable contribution of the film-substrate interface as well as substrate backside, and describes the film reflectance spectrum as determined by the experimental situation (deposition approach and parameters). The reliability of the method is tested on films of a well-known material (indium tin oxide) by deliberately changing film thickness and structural quality through doping. Results are found consistent with usual information yielded by reflectance, its inherent relationship with scattering processes and contributions to the measured total reflectance.

Deployment of attention to emotional pictures varies as a function of externally-oriented thinking: An eye tracking investigation.

Science.gov (United States)

Wiebe, Alex; Kersting, Anette; Suslow, Thomas

2017-06-01

Alexithymia is a multidimensional personality construct including the components difficulties identifying feelings (DIF), difficulties describing feelings (DDF), and externally oriented thinking (EOT). Different features of alexithymia are thought to reflect specific deficits in the cognitive processing and regulation of emotions. The aim of the present study was to examine for the first time patterns of deployment of attention as a function of alexithymia components in healthy persons by using eye-tracking technology. It was assumed that EOT is linked to avoidance of negative images. 99 healthy adults viewed freely pictures consisting of anxiety-related, depression-related, positive, and neutral images while gaze behavior was registered. Alexithymia was assessed by the 20-Item Toronto Alexithymia Scale. Measures of anxiety, depression, and (visual-perceptual) intelligence were also administered. A main effect of emotion condition on dwell times was observed. Viewing time was lowest for neutral images, longer for depression-related and happy images, and longest for anxiety-related images. Gender and EOT had significant effects on dwell times. EOT correlated negatively with dwell time on depression-related (but not anxiety-related) images. There were no correlations of dwell times with depression, trait anxiety, intelligence, DIF, or DDF. Alexithymia was assessed exclusively by self-report. Our results show that EOT but not DIF or DDF influences attention deployment to simultaneously presented emotional pictures. EOT may reduce attention allocation to dysphoric information. This attentional characteristic of EOT individuals might have mood protecting effects but also detrimental impacts on social relationships and coping competencies. Copyright © 2016 Elsevier Ltd. All rights reserved.

Characterization of the inside and outside oxide surfaces of irradiated pressure tubes of Embalse nuclear power plant

International Nuclear Information System (INIS)

Bordoni, Roberto A.; Olmedo, Ana M.

2004-01-01

The inside and outside surfaces of two pressure tubes (PT) removed from Embalse nuclear power plant (CNE) after 10 of effective full power years (EFPY) were characterized. The oxide thickness of both faces, in different zones, was also measured. The inside surfaces of both PTs, B-102 (A-14) and B-298 (L-12), were covered with a black oxide that replicates the original PT surface. A network of microcracks perpendicular to the inside surface in contact with the coolant was found. In some cases, near the outlet of the PT, some spalling of the oxide was also found. These small microcracks and spalling do not affect the protective character of the oxide since a thickness about 5 or 6 μm of an undamaged oxide is found at the metal/oxide interface side. The oxide thickness changes between approximately 6 to 12 μm for B-102 tube and around 7 to 15 μm for B-298 tube. The average corrosion rate is 1.16 μm/10 4 HH for B-102 tube and 1.35 μm/10 4 HH for B-298 tube at 5.8 m position for both PTs. These corrosion rates show good corrosion behaviour of CNE PTs. The average corrosion rate of the inside surface of the PTs depends on the coolant temperature but not on fast neutron flux. The outside oxide film is black, shiny, compact and protective, replicating also the original surface. The oxide thickness changes between 2 to 6.5 μm in B-102 tube and between 1.8 to 3.7 μm B-298 tube. These oxide thicknesses are within the values reported for PTs in CANDU Stations. (author) [es

Kinetics and mechanism of the oxidation of cerium in air at ambient temperature

International Nuclear Information System (INIS)

Wheeler, D.W.

2016-01-01

Highlights: • XRD and transverse sections suggest Ce_2O_3 forms on Ce before being overlaid by CeO_2. • XRD and oxide thickness measurements both indicate linear oxidation. • Extensive cracking on oxide surface which sustains continuing oxidation. • Electron microscopy has shown features indicative of nodular oxidation. • Oxide growth rate determined to be 0.1 μm day"−"1 under the conditions in this study. - Abstract: This paper describes a study of the oxidation of cerium in air at ambient temperature. Specimens were exposed for up to 60 days, during which they were analysed by X-ray diffraction (XRD) at regular intervals. Both XRD and oxide thickness measurements indicate linear oxidation over the duration of this study. Under the conditions employed in this study, the rate of oxide growth has been determined to be 0.1 μm day"−"1. The oxidation process appears to be assisted by extensive cracking in the oxide layer which acts as a non-protective film for the underlying metal.

Optical contrast for identifying the thickness of two-dimensional materials

Science.gov (United States)

Bing, Dan; Wang, Yingying; Bai, Jing; Du, Ruxia; Wu, Guoqing; Liu, Liyan

2018-01-01

One of the most intriguing properties of two-dimensional (2D) materials is their thickness dependent properties. A quick and precise technique to identify the layer number of 2D materials is therefore highly desirable. In this review, we will introduce the basic principle of using optical contrast to determine the thickness of 2D material and also its advantage as compared to other modern techniques. Different 2D materials, including graphene, graphene oxide, transitional metal dichalcogenides, black phosphorus, boron nitride, have been used as examples to demonstrate the capability of optical contrast methods. A simple and more efficient optical contrast image technique is also emphasized, which is suitable for quick and large-scale thickness identification. We have also discussed the factors that could affect the experimental results of optical contrast, including incident light angle, anisotropic nature of materials, and also the twisted angle between 2D layers. Finally, we give perspectives on future development of optical contrast methods for the study and application of 2D materials.

Lead Thickness Measurements

International Nuclear Information System (INIS)

Rucinski, R.

1998-01-01

The preshower lead thickness applied to the outside of D-Zero's superconducting solenoid vacuum shell was measured at the time of application. This engineering documents those thickness measurements. The lead was ordered in sheets 0.09375-inch and 0.0625-inch thick. The tolerance on thickness was specified to be +/- 0.003-inch. The sheets all were within that thickness tolerance. The nomenclature for each sheet was designated 1T, 1B, 2T, 2B where the numeral designates it's location in the wrap and 'T' or 'B' is short for 'top' or 'bottom' half of the solenoid. Micrometer measurements were taken at six locations around the perimeter of each sheet. The width,length, and weight of each piece was then measured. Using an assumed pure lead density of 0.40974 lb/in 3 , an average sheet thickness was calculated and compared to the perimeter thickness measurements. In every case, the calculated average thickness was a few mils thinner than the perimeter measurements. The ratio was constant, 0.98. This discrepancy is likely due to the assumed pure lead density. It is not felt that the perimeter is thicker than the center regions. The data suggests that the physical thickness of the sheets is uniform to +/- 0.0015-inch.

Optical characterisation of thin film cadmium oxide prepared by a ...

African Journals Online (AJOL)

The optical transmission spectra of transparent conducting cadmium oxide (CdO) thin films deposited by a modified reactive evaporation process onto glass substrates have been measured. The interference fringes were used to calculate the refractive index, thickness variation, average thickness and absorption coefficient ...

Tubular solid oxide fuel cells with porous metal supports and ceramic interconnections

Science.gov (United States)

Huang, Kevin [Export, PA; Ruka, Roswell J [Pittsburgh, PA

2012-05-08

An intermediate temperature solid oxide fuel cell structure capable of operating at from 600.degree. C. to 800.degree. C. having a very thin porous hollow elongated metallic support tube having a thickness from 0.10 mm to 1.0 mm, preferably 0.10 mm to 0.35 mm, a porosity of from 25 vol. % to 50 vol. % and a tensile strength from 700 GPa to 900 GPa, which metallic tube supports a reduced thickness air electrode having a thickness from 0.010 mm to 0.2 mm, a solid oxide electrolyte, a cermet fuel electrode, a ceramic interconnection and an electrically conductive cell to cell contact layer.

Design of Thermal Barrier Coatings Thickness for Gas Turbine Blade Based on Finite Element Analysis

Directory of Open Access Journals (Sweden)

Biao Li

2017-01-01

Full Text Available Thermal barrier coatings (TBCs are deposited on the turbine blade to reduce the temperature of underlying substrate, as well as providing protection against the oxidation and hot corrosion from high temperature gas. Optimal ceramic top-coat thickness distribution on the blade can improve the performance and efficiency of the coatings. Design of the coatings thickness is a multiobjective optimization problem due to the conflicts among objectives of high thermal insulation performance, long operation durability, and low fabrication cost. This work developed a procedure for designing the TBCs thickness distribution for the gas turbine blade. Three-dimensional finite element models were built and analyzed, and weighted-sum approach was employed to solve the multiobjective optimization problem herein. Suitable multiregion top-coat thickness distribution scheme was designed with the considerations of manufacturing accuracy, productivity, and fabrication cost.

Enhanced selectivity of boron doped diamond electrodes for the detection of dopamine and ascorbic acid by increasing the film thickness

Energy Technology Data Exchange (ETDEWEB)

Qi, Yao; Long, Hangyu [School of Material Science and Engineering, Central South University, Changsha 410083 (China); Ma, Li, E-mail: marycsupm@csu.edu.cn [State Key Laboratory of Powder Metallurgy, Central South University, Changsha 410083 (China); Wei, Quiping, E-mail: qiupwei@csu.edu.cn [School of Material Science and Engineering, Central South University, Changsha 410083 (China); State Key Laboratory of Powder Metallurgy, Central South University, Changsha 410083 (China); Li, Site [School of Material Science and Engineering, Central South University, Changsha 410083 (China); Yu, Zhiming [School of Material Science and Engineering, Central South University, Changsha 410083 (China); State Key Laboratory of Powder Metallurgy, Central South University, Changsha 410083 (China); Hu, Jingyuan [School of Material Science and Engineering, Central South University, Changsha 410083 (China); Liu, Peizhi [Key laboratory of interface science and engineering in advanced materials, Ministry of Education, Taiyuan University of Technology, Taiyuan 030024,PR China (China); Wang, Yijia [School of Material Science and Engineering, Central South University, Changsha 410083 (China); Meng, Lingcong [Department of Chemistry, University of Warwick, Coventry, West Midlands CV4 7AL (United Kingdom)

2016-12-30

Highlights: • BDD electrodes with different thickness have been fabricated. • BDD electrodes are used for simultaneous detection of DA and AA. • Anodic pretreatment enhance the separation of DA and AA oxidation peak potential. • Thicker BDD electrode show better performance for DA detection coexisting with AA. - Abstract: In this paper, boron doped diamond (BDD) with different thickness were prepared by hot filament chemical vapor deposition. The performance of BDD electrodes for detecting dopamine (DA) and ascorbic acid (AA) were investigated. Scanning electron microscopy and Raman spectra reveal the grain size increases and the film quality improves with the increase of film thickness. Electrochemical test show that the transfer coefficient in [Fe{sub 3} (CN) {sub 6}]{sup 3−/4−} redox system increases with the increase of the film thickness. The results of selectivity and sensitivity for DA mixed with AA detection show that 8h-BDD and 12h-BDD electrodes possess well selective separated oxidation peaks of DA and AA, and the 12h-BDD electrode exhibits optimal sensitivity until the DA concentration drops to 1 μ M.

Modes of oxidation in SiC-reinforced mullite/ZrO2 composites: Oxidation vs depth behavior

International Nuclear Information System (INIS)

Lin, C.C.; Ruh, R.

1999-01-01

Two basic oxidation modes of composites with oxidizing particles in a non-oxidizing matrix have been observed. Mode I is defined as the complete oxidation of all the particles within an outer layer of the composite, while mode II exhibits partial oxidation of the particles, deep into the composite. Using microscopic observations to plot the silica layer thickness on particles (whiskers) vs the depth of the particles (whiskers) below the composite surface is proposed as a powerful means of categorizing and quantifying actual oxidation modes. Thus, mullite/SiC-whisker composites were found to have mode I oxidation behavior, while certain (mullite + ZrO 2 )/SiC-whisker composites were found to exhibit mode II behavior, followed by a mixed mode after severe exposures. It is proposed that mode II behavior appears when oxygen diffusivity in the matrix is much higher than that in the product oxide layer

Electronic properties of thermally formed thin iron oxide films

International Nuclear Information System (INIS)

Wielant, J.; Goossens, V.; Hausbrand, R.; Terryn, H.

2007-01-01

The oxide layer, present between an organic coating and the substrate, guarantees adhesion of the coating and plays a determinating role in the delamination rate of the organic coating. The purpose of this study is to compare the resistive and semiconducting properties of thermal oxides formed on steel in two different atmospheres at 250 deg. C: an oxygen rich atmosphere, air, and an oxygen deficient atmosphere, N 2 . In N 2 , a magnetite layer grows while in air a duplex oxide film forms composed by an inner magnetite layer and a thin outer hematite scale. The heat treatment for different amounts of time at high temperature was used as method to sample the thickness variation and change in electronic and semiconducting properties of the thermal oxide layers. Firstly, linear voltammetric measurements were performed to have a first insight in the electrochemical behavior of the thermal oxides in a borate buffer solution. Electrochemical impedance spectroscopy in the same buffer combined with the Mott-Schottky analysis were used to determine the semiconducting properties of the thermal oxides. By spectroscopic ellipsometry (SE) and atomic force microscopy (AFM), respectively, the thickness and roughness of the oxide layers were determined supporting the physical interpretation of the voltammetric and EIS data. These measurements clearly showed that oxide layers with different constitution, oxide resistance, flatband potential and doping concentration can be grown by changing the atmosphere

Synthesis of graphene oxide through different oxidation degrees for solar cells

Science.gov (United States)

Zhang, Xiaoshan; Wang, Huan; Huang, Tianjiao; Wen, Lingling; Zhou, Liya

2018-03-01

Graphene is known as an electro-chemical material and widely used in electro-chemical devices, especially in solar cell. Decreasing the thickness of the layer is a critical way to improve the electrochemical property of solar cells as far as possible. Among the various oxidation approaches, presented herein is a facile approach, which is easier, less cost and more effective, environmental benign with the greener processing and without any requirement for post purification, towards the synthesis of graphene oxide (GO) with different oxidation degrees by potassium ferrate (K2FeO4). A modified method using less amount of oxidizing agent is reported herein. It is the pretreatment of the synthesis of graphite, which maintains the thermal cycle of the system. This novel reports to compound GO with controlled oxidation degrees can not only increase the quantity of oxygen-containing functional groups on GO surface, increase space between graphene oxide layer and facilitate the dispersion of graphene in aqueous solution. Thus, the modified method shows prospect for large-scale production of graphene oxide and its novel application, in addition to its derivative and market potential for solar cells.

Secondary electron emission influenced by oxidation on the aluminum surface: the roles of the chemisorbed oxygen and the oxide layer

Science.gov (United States)

Li, Jiangtao; Hoekstra, Bart; Wang, Zhen-Bin; Qiu, Jie; Pu, Yi-Kang

2018-04-01

A relationship between the apparent secondary electron yield ({γ }{{se}}) and the oxygen coverage/oxide layer thickness on an aluminum cathode is obtained in an experiment under a controlled environment. The apparent secondary electron yield ({γ }{{se}}) is deduced from the breakdown voltage between two parallel plate electrodes in a 360 mTorr argon environment using a simple Townsend breakdown model with the assumption that the variation of the apparent secondary electron yield is dominated by the variation of the argon ion induced processes. The oxygen coverage/oxide layer thickness on the aluminum cathode is measured by a semi in situ x-ray photoemission spectroscopy equipment which is directly attached to the discharge chamber. It is found that three phases exist: (1) in the monomonolayer regime, as the oxygen coverage increases from 0 to 0.3, {γ }{{se}} decreases by nearly 40 % , (2) as the oxygen coverage increases from 0.3 to 1, {γ }{{se}} keeps nearly constant, (3) as the oxide layer thickness increases from about 0.3 nm to about 1.1 nm, {γ }{{se}} increases by 150 % . We propose that, in the submonolayer regime, the chemisorbed oxygen on the aluminum surface causes the decrease of {γ }{{se}} by creating a local potential barrier, which reduces the Auger neutralization rate and the energy gained by the Auger electrons. In the multilayer regime, as the oxide layer grows in thickness, there are three proposed mechanisms which cause the increase of {γ }{{se}}: (1) the work function decreases; (2) resonance neutralization and Auger de-excitation may exist. This is served as another channel for secondary electron production; (3) the kinetic energy of Auger electrons is increased on average, leading to a higher probability for electrons to overcome the surface potential barrier.

SIMS and TEM study on oxide characteristics of Zircaloy

International Nuclear Information System (INIS)

Jung, Y. H.; Baek, J. H.; Kim, S. J.; Kim, K. H.; Choi, B. K.; Jung, Y. H.

1998-01-01

Long-term corrosion test, SIMS analysis, and TEM study were carried out to investigate the corrosion characteristics and corrosion mechanism of Zircaloy-4 in LiOH solution. The corrosion tests were performed in alkali solutions at 350 deg C for 500days. SIMS analysis was performed for the specimens prepared to have an equal oxide thickness to measure the cation content. TEM studies on the samples formed in various alkali solutions were also conducted. Based on the corrosion test, SIMS analysis, and TEM study, the cation is considered to control the corrosion in LiOH solution and its effect is dependent on the concentration of alkali and the oxide thickness. The slight acceleration of corrosion rate at a low concentration is thought to be caused by the cation incorporation into oxide while the significant acceleration at a high concentration is due to the transformation of oxide microstructure that would be induced by the cation incorporation

Are children participating in a quasi-experimental education outside the classroom intervention more physically active?

OpenAIRE

Schneller, Mikkel Bo; Duncan, Scott; Schipperijn, Jasper; Nielsen, Glen; Mygind, Erik; Bentsen, Peter

2017-01-01

BACKGROUND: Education outside the classroom (EOtC) is a curriculum-based approach to teaching that has shown positive associations with children's physical activity and academic learning in small-scale case studies. The purpose of this large-scale quasi-experimental study was to determine if children who participate regularly in EOtC spend more time being physically active than children who do not.METHODS: In the 2014/2015 study TEACHOUT, classes were recruited in pairs such that each EOtC cl...

Non-equilibrium oxidation states of zirconium during early stages of metal oxidation

International Nuclear Information System (INIS)

Ma, Wen; Yildiz, Bilge; Herbert, F. William; Senanayake, Sanjaya D.

2015-01-01

The chemical state of Zr during the initial, self-limiting stage of oxidation on single crystal zirconium (0001), with oxide thickness on the order of 1 nm, was probed by synchrotron x-ray photoelectron spectroscopy. Quantitative analysis of the Zr 3d spectrum by the spectrum reconstruction method demonstrated the formation of Zr 1+ , Zr 2+ , and Zr 3+ as non-equilibrium oxidation states, in addition to Zr 4+ in the stoichiometric ZrO 2 . This finding resolves the long-debated question of whether it is possible to form any valence states between Zr 0 and Zr 4+ at the metal-oxide interface. The presence of local strong electric fields and the minimization of interfacial energy are assessed and demonstrated as mechanisms that can drive the formation of these non-equilibrium valence states of Zr

Fabrication and Characterization of PZT Thick Films for Sensing and Actuation

Directory of Open Access Journals (Sweden)

Kuo-Ching Kuo

2007-04-01

Full Text Available Lead Zirconate Titanate oxide (PZT thick films with thicknesses of up to 10 μmwere developed using a modified sol-gel technique. Usually, the film thickness is less than1 μm by conventional sol-gel processing, while the electrical charge accumulation whichreveals the direct effect of piezoelectricity is proportional to the film thickness and thereforerestricted. Two approaches were adopted to conventional sol-gel processing – precursorconcentration modulation and rapid thermal annealing. A 10 μm thick film was successfullyfabricated by coating 16 times via this technique. The thickness of each coating layer wasabout 0.6 μm and the morphology of the film was dense with a crack-free area as large as 16mm2. In addition, the structure, surface morphology and physical properties werecharacterized by X-ray diffraction (XRD, scanning electron microscopy (SEM and atomicforce microscopy (AFM and electrical performance. The dielectric constant and hysteresisloops were measured as electric characteristics. This study investigates the actuation andsensing performance of the vibrating structures with the piezoelectric thick film. Theactuation tests demonstrated that a 4 mm x 4 mm x 6.5 μm PZT film drove a 40 mm x 7 mmx 0.5 mm silicon beam as an actuator. Additionally, it generated an electrical signal of 60mVpp as a sensor, while vibration was input by a shaker. The frequencies of the first twomodes of the beam were compared with the theoretical values obtained by Euler-Bernoullibeam theory. The linearity of the actuation and sensing tests were also examined.

In situ Oxidation of Ultrathin Silver Films on Ni(111)

International Nuclear Information System (INIS)

Meyer, A.; Flege, I.; Senanayake, S.; Kaemena, B.; Rettew, R.; Alamgir, F.; Falta, J.

2011-01-01

Oxidation of silver films of one- and two-monolayer thicknesses on the Ni(111) surface was investigated by low-energy electron microscopy at temperatures of 500 and 600 K. Additionally, intensity-voltage curves were measured in situ during oxidation to reveal the local film structure on a nanometer scale. At both temperatures, we find that exposure to molecular oxygen leads to the destabilization of the Ag film with subsequent relocation of the silver atoms to small few-layer-thick silver patches and concurrent evolution of NiO(111) regions. Subsequent exposure of the oxidized surface to ethylene initiates the transformation of bilayer islands back into monolayer islands, demonstrating at least partial reversibility of the silver relocation process at 600 K.

Synthesis of dye-sensitized solar cells. Efficiency cells as a thickness of titanium dioxide

Directory of Open Access Journals (Sweden)

Szura Dominika

2017-01-01

Full Text Available Defying the influence of the thickness of TiO2 efficiency of dye-sensitized solar cell. It was confirmed that the compatibility of printed layers with the parameters closely related with the DSSC. It was found that the increase in thickness of the titanium dioxide layer, increases the distance between the electrodes, determined by the thickness of the Surlyn foil. With the rise of thickness of dyed layer of TiO2 established decrease in the value of its transmittance. Greatest transparency and aesthetic value obtained for photovoltaic modules with a single layer of titanium dioxide. The improved performance efficiency and preferred yields maximum power were noticed and exhibited by the cells covered with three layers of TiO2. It was established that the behaviour of economic efficiency in the production process, provides a range of cells with two layers of oxide, showing a similar performance and greater transparency.

Spark counting technique of alpha tracks on an aluminium oxide film

International Nuclear Information System (INIS)

Morishima, Hiroshige; Koga, Taeko; Niwa, Takeo; Kawai, Hiroshi

1984-01-01

We have tried to use aluminium oxide film as a neutron detector film with a spark counter for neutron monitoring in the mixed field of neutron and gamma-rays near a reactor. The merits of this method are that (1) aluminium oxide is good electric insulator, (2) any desired thickness of the film can be prepared, (3) chemical etching of the thin film can be dispensed with. The relation between spark counts and numbers of alpha-particles which entered the aluminium oxide film 1 μm thick was linear in the range of 10 5 -10 7 alpha-particles. The sensitivity(ratio of the spark counts to irradiated numbers of alpha-particles) was approximately 10 -3 . (author)

A parametric study of laser induced ablation-oxidation on porous silicon surfaces

International Nuclear Information System (INIS)

De Stefano, Luca; Rea, Ilaria; Nigro, M Arcangela; Della Corte, Francesco G; Rendina, Ivo

2008-01-01

We have investigated the laser induced ablation-oxidation process on porous silicon layers having different porosities and thicknesses by non-destructive optical techniques. In particular, the interaction between a low power blue light laser and the porous silicon surfaces has been characterized by variable angle spectroscopic ellipsometry and Fourier transform infrared spectroscopy. The oxidation profiles etched on the porous samples can be tuned as functions of the layer porosity and laser fluence. Oxide stripes of width less than 2 μm and with thicknesses between 100 nm and 5 μm have been produced, depending on the porosity of the porous silicon, by using a 40 x focusing objective

Oxidation of scandium thin films on tungsten surface

International Nuclear Information System (INIS)

Gorodetskij, D.A.; Martynyuk, A.V.

1988-01-01

Presence of Sc on the surface of W in amounts larger than a monolayer coverage leads to a decrease of the work function at the initial oxidation stage, which is attributed to oxygen implantation into the surface layer of the metal. A subsequent oxidation is followed by the formation on the surface of a thin oxide layer and an increase of the work function. An increase of the amount of Sc deposited on the surface before the oxidation decreases the work function of the obtained oxide from 5.8 (clean W surface) down to 3.3 eV (thick Sc layer on W)

Characterization of zirconium alloy oxidation films by alternating current impedance

International Nuclear Information System (INIS)

Rosecrans, P.M.

1984-01-01

Kinetics of zirconium alloy oxidation are highly nonlinear. The results of electrochemical measurements and electron microscopy support the existence of porosity in oxide films formed on zirconium alloys in high temperature aqueous environments. Analytical treatment is presented relating oxidation kinetics to the thickness and distribution of nonporous elements within the oxide. This analysis illustrates that both the level and distribution of porosity within the oxide factor into oxidation kinetics. The barrier layer model can provide a basis for predicting the effect of environmental changes on oxidation rate. In addition, it demonstrates the need for further research into porosity generation mechanisms in oxide films

Characterization of zirconium alloy oxidation films by alternating current impedance

International Nuclear Information System (INIS)

Rosecrans, P.M.

1983-11-01

Kinetics of zirocnium alloy oxidation are highly nonlinear. The results of electrochemical measurements and electron microscopy support the existence of porosity in oxide films formed on zirconium alloys in high temperature aqueous environments. Analytical treatment is presented relating oxidation kinetics to the thickness and distribution of nonporous elements within the oxide. This analysis illustrates that both the level and distribution of porosity within the oxide factor into oxidation kinetics. The barrier layer model can provide a basis for predicting the effect of environmental changes on oxidation rate. In addition, it demonstrates the need for further research into porosity generation mechanisms in oxide films

Formation of corrosion-resistant oxide film on uranium

International Nuclear Information System (INIS)

Petit, G.S.

1976-01-01

A vacuum heat-treatment method was developed for coating metallic uranium with an adherent protective film of uranium oxide. The film is prepared by vacuum heat-treating the metallic uranium at 625 0 C for 1 h while controlling the amount of oxygen being metered into the furnace. Uranium coupons with the protective film were exposed for several hundred hours in a corrosion test bath at 95 0 C and 100 percent RH without corroding. Film thicknesses ranging from 5 to 25 μm (0.0002 to 0.001 in.) were prepared and corrosion tested; the film thickness can be controlled to less than +-2.5 μm (+-0.0001 in.). The oxide film is hard, nonwetting, and very adherent. The resulting surface finish of the metal is equivalent to that of the original finish. The advantages of the oxide films over other protective coatings are given. 12 fig

Molecular-beam-deposited yttrium-oxide dielectrics in aluminum-gated metal - oxide - semiconductor field-effect transistors: Effective electron mobility

International Nuclear Information System (INIS)

Ragnarsson, L.-A degree.; Guha, S.; Copel, M.; Cartier, E.; Bojarczuk, N. A.; Karasinski, J.

2001-01-01

We report on high effective mobilities in yttrium-oxide-based n-channel metal - oxide - semiconductor field-effect transistors (MOSFETs) with aluminum gates. The yttrium oxide was grown in ultrahigh vacuum using a reactive atomic-beam-deposition system. Medium-energy ion-scattering studies indicate an oxide with an approximate composition of Y 2 O 3 on top of a thin layer of interfacial SiO 2 . The thickness of this interfacial oxide as well as the effective mobility are found to be dependent on the postgrowth anneal conditions. Optimum conditions result in mobilities approaching that of SiO 2 -based MOSFETs at higher fields with peak mobilities at approximately 210 cm 2 /Vs. [copyright] 2001 American Institute of Physics

Tunnel Oxides Formed by Field-Induced Anodisation for Passivated Contacts of Silicon Solar Cells

Directory of Open Access Journals (Sweden)

Jingnan Tong

2018-02-01

Full Text Available Tunnel silicon oxides form a critical component for passivated contacts for silicon solar cells. They need to be sufficiently thin to allow carriers to tunnel through and to be uniform both in thickness and stoichiometry across the silicon wafer surface, to ensure uniform and low recombination velocities if high conversion efficiencies are to be achieved. This paper reports on the formation of ultra-thin silicon oxide layers by field-induced anodisation (FIA, a process that ensures uniform oxide thickness by passing the anodisation current perpendicularly through the wafer to the silicon surface that is anodised. Spectroscopical analyses show that the FIA oxides contain a lower fraction of Si-rich sub-oxides compared to wet-chemical oxides, resulting in lower recombination velocities at the silicon and oxide interface. This property along with its low temperature formation highlights the potential for FIA to be used to form low-cost tunnel oxide layers for passivated contacts of silicon solar cells.

Neutron energy spectra produced by α-bombardment of light elements in thick targets

International Nuclear Information System (INIS)

Jacobs, G.J.H.

1982-01-01

The aim of the work, presented in this thesis, is to determine energy spectra of neutrons produced by α-particle bombardment of thick targets containing light elements. These spectra are required for nuclear waste management. The set-up of the neutron spectrometer is described, and its calibration discussed. Absolute efficiencies were determined at various neutron energies, using monoenergetic neutrons produced with the Van de Graaff accelerator in pulsed mode. The additional calibration of the neutron spectrometer as proton-recoil spectrometer was carried out primarily for future applications in measurements where no pulsed neutron source is available or the neutron flux density is too low. The basis for an accurate uncertainty analysis is made by the determination of the covariance matrix for the uncertainties in the efficiencies. The determination of the neutron energy spectra from time-of-flight and from proton-recoil measurements is described. A comparison of the results obtained from the two different types of measurements is made. The experimentally determined spectra were compared with spectra calculated from stopping powers and theoretically determined cross sections. These cross sections were calculated from optical model parameters and level parameters using the Hauser-Feshbach formalism. Measurements were carried out on thick targets of silicon, aluminium, magnesium, carbon, boron nitride, calcium fluoride, aluminium oxide, silicon oxide and uranium oxide at four different α-particle energies. (Auth.)

Choroidal thickness in Malaysian eyes with full-thickness macular holes

Directory of Open Access Journals (Sweden)

Chew Y Tan

2018-02-01

Full Text Available AIM: To compare choroidal thickness at the macula in eyes with unilateral idiopathic full-thickness macular holes(FTMHwith that of unaffected fellow eyes, and eyes of normal control patients.METHODS: Cross-sectional study. Thirty patients with unilateral idiopathic FTMH and thirty age, sex, and race-matched controls were recruited. Axial lengths were measured using laser interferometry. Enhanced depth imaging optical coherence tomography images were obtained using Heidelberg spectral-domain optical coherence tomography. Choroidal thickness was measured at the fovea, and at 1 mm and 2 mm nasally, temporally, superiorly and inferiorly from the center of the fovea. Statistical analysis was performed using independent and paired t-tests, chi-square tests, and Pearson correlation tests(PRESULTS: The mean subfoveal choroidal thickness was 201.0±44.0 μm in the FTMH group, 225.3±51.4 μm in the fellow eye group and 262.3±70.3 μm in the control group. The choroid was thinner in FTMH eyes at all locations when compared to control eyes(PPP>0.05. Choroidal thickness was generally highest subfoveally and lowest nasally. Subfoveal choroidal thickness was negatively correlated with age(r=-0.278, P=0.032, and axial length(r=-0.328, P=0.011.CONCLUSION: Choroidal thickness is lower in both eyes of patients with unilateral FTMH compared to healthy control eyes.

Resonating Terahertz Response of Periodic Arrays of Subwavelength Apertures

KAUST Repository

D’ Apuzzo, Fausto; Candeloro, Patrizio; Domenici, Fabio; Autore, M.; Di Pietro, Paola; Perucchi, Andrea; Roy, P.; Sennato, Simona; Bordi, Federico; Di Fabrizio, Enzo M.; Lupi, Stefano

2014-01-01

Extraordinary optical transmission (EOT) peaks mediated by plasmonic excitations can be observed in a variety of subwavelength patterned metallic surfaces. In this paper, we have fabricated and spectroscopically characterized plasmon devices exhibiting EOT peaks at terahertz (THz) frequencies. These devices, which resonate with intermediate and collective modes of macromolecules, can be used for detection of materials of biological interest and their performances have been experimentally determined by measuring the variation of the EOT frequencies for thin sub-micrometric organic layers deposited onto the device surface.

Resonating Terahertz Response of Periodic Arrays of Subwavelength Apertures

KAUST Repository

D’Apuzzo, Fausto

2014-10-11

Extraordinary optical transmission (EOT) peaks mediated by plasmonic excitations can be observed in a variety of subwavelength patterned metallic surfaces. In this paper, we have fabricated and spectroscopically characterized plasmon devices exhibiting EOT peaks at terahertz (THz) frequencies. These devices, which resonate with intermediate and collective modes of macromolecules, can be used for detection of materials of biological interest and their performances have been experimentally determined by measuring the variation of the EOT frequencies for thin sub-micrometric organic layers deposited onto the device surface.

Monitoring the in-situ oxide growth on uranium by ultraviolet-visible reflectance spectroscopy

Science.gov (United States)

Schweke, Danielle; Maimon, Chen; Chernia, Zelig; Livneh, Tsachi

2012-11-01

We demonstrate the in-situ monitoring of oxide growth on U-0.1 wt. % Cr by means of UV-visible reflectance spectroscopy in the thickness range of ˜20-150 nm. Two different approaches are presented: In the "modeling approach," we employ a model for a metallic substrate covered by a dielectric layer, while taking into account the buildup of oxygen gradient and surface roughness. Then, we fit the simulated spectra to the experimental one. In the "extrema analysis," we derive an approximated analytical expression, which relates the oxide thickness to the position of the extrema in the reflectance spectra based on the condition for optical interference of the reflected light. Good agreement is found between the values extracted by the two procedures. Activation energy of ˜21 kcal/mole was obtained by monitoring the oxide growth in the temperature range of 22-90 °C. The upper bound for the thickness determination is argued to be mostly dictated by cracking and detachment processes in the formed oxide.

Laser induced single spot oxidation of titanium

Energy Technology Data Exchange (ETDEWEB)

Jwad, Tahseen, E-mail: taj355@bham.ac.uk; Deng, Sunan; Butt, Haider; Dimov, S.

2016-11-30

Highlights: • A new high resolution laser induced oxidation (colouring) method is proposed (single spot oxidation). • The method is applied to control oxide films thicknesses and hence colours on titanium substrates in micro-scale. • The method enable imprinting high resolution coloured image on Ti substrate. • Optical and morphological periodic surface structures are also produced by an array of oxide spots using the proposed method. • Colour coding of two colours into one field is presented. - Abstract: Titanium oxides have a wide range of applications in industry, and they can be formed on pure titanium using different methods. Laser-induced oxidation is one of the most reliable methods due to its controllability and selectivity. Colour marking is one of the main applications of the oxidation process. However, the colourizing process based on laser scanning strategies is limited by the relative large processing area in comparison to the beam size. Single spot oxidation of titanium substrates is proposed in this research in order to increase the resolution of the processed area and also to address the requirements of potential new applications. The method is applied to produce oxide films with different thicknesses and hence colours on titanium substrates. High resolution colour image is imprinted on a sheet of pure titanium by converting its pixels’ colours into laser parameter settings. Optical and morphological periodic surface structures are also produced by an array of oxide spots and then analysed. Two colours have been coded into one field and the dependencies of the reflected colours on incident and azimuthal angles of the light are discussed. The findings are of interest to a range of application areas, as they can be used to imprint optical devices such as diffusers and Fresnel lenses on metallic surfaces as well as for colour marking.

Laser induced single spot oxidation of titanium

International Nuclear Information System (INIS)

Jwad, Tahseen; Deng, Sunan; Butt, Haider; Dimov, S.

2016-01-01

Highlights: • A new high resolution laser induced oxidation (colouring) method is proposed (single spot oxidation). • The method is applied to control oxide films thicknesses and hence colours on titanium substrates in micro-scale. • The method enable imprinting high resolution coloured image on Ti substrate. • Optical and morphological periodic surface structures are also produced by an array of oxide spots using the proposed method. • Colour coding of two colours into one field is presented. - Abstract: Titanium oxides have a wide range of applications in industry, and they can be formed on pure titanium using different methods. Laser-induced oxidation is one of the most reliable methods due to its controllability and selectivity. Colour marking is one of the main applications of the oxidation process. However, the colourizing process based on laser scanning strategies is limited by the relative large processing area in comparison to the beam size. Single spot oxidation of titanium substrates is proposed in this research in order to increase the resolution of the processed area and also to address the requirements of potential new applications. The method is applied to produce oxide films with different thicknesses and hence colours on titanium substrates. High resolution colour image is imprinted on a sheet of pure titanium by converting its pixels’ colours into laser parameter settings. Optical and morphological periodic surface structures are also produced by an array of oxide spots and then analysed. Two colours have been coded into one field and the dependencies of the reflected colours on incident and azimuthal angles of the light are discussed. The findings are of interest to a range of application areas, as they can be used to imprint optical devices such as diffusers and Fresnel lenses on metallic surfaces as well as for colour marking.

Ion beam analysis of PECVD silicon oxide thin films

International Nuclear Information System (INIS)

Fernandez-Lima, F.; Rodriguez, J.A.; Pedrero, E.; Fonseca Filho, H.D.; Llovera, A.; Riera, M.; Dominguez, C.; Behar, M.; Zawislak, F.C.

2006-01-01

A study of ion beam analysis techniques of plasma enhanced chemical vapor deposited (PECVD) silicon oxide thin films (1 μm thick) obtained from silane (SiH 4 ) and nitrous oxide (N 2 O) is reported. The film, elemental composition and surface morphology were determined as function of the reactant gas flow ratio, R = [N 2 O]/[SiH 4 ] in the 22-110 range using the Rutherford backscattering spectrometry, nuclear reaction analysis and atomic force microscopy techniques. The density of the films was determined by combining the RBS and thickness measurements. All the experiments were done at a deposition temperature of 300 deg. C. In all the cases almost stoichiometric oxides were obtained being the impurity content function of R. It was also observed that physical properties such as density, surface roughness and shape factor increase with R in the studied interval

MoO3 Thickness, Thermal Annealing and Solvent Annealing Effects on Inverted and Direct Polymer Photovoltaic Solar Cells

Directory of Open Access Journals (Sweden)

Guillaume Wantz

2012-11-01

Full Text Available Several parameters of the fabrication process of inverted polymer bulk heterojunction solar cells based on titanium oxide as an electron selective layer and molybdenum oxide as a hole selective layer were tested in order to achieve efficient organic photovoltaic solar cells. Thermal annealing treatment is a common process to achieve optimum morphology, but it proved to be damageable for the performance of this kind of inverted solar cells. We demonstrate using Auger analysis combined with argon etching that diffusion of species occurs from the MoO3/Ag top layers into the active layer upon thermal annealing. In order to achieve efficient devices, the morphology of the bulk heterojunction was then manipulated using the solvent annealing technique as an alternative to thermal annealing. The influence of the MoO3 thickness was studied on inverted, as well as direct, structure. It appeared that only 1 nm-thick MoO3 is enough to exhibit highly efficient devices (PCE = 3.8% and that increasing the thickness up to 15 nm does not change the device performance. 

Effect of oxygen partial pressure on oxidation of Mo-metal

Science.gov (United States)

Sharma, Rabindar Kumar; Kumar, Prabhat; Singh, Megha; Gopal, Pawar; Reddy, G. B.

2018-05-01

This report explains the effect of oxygen partial pressure (PO2 ) on oxidation of Mo-metal in oxygen plasma. XRD results indulge that oxide layers formed on Mo-surfaces at different oxygen partial pressures have two different oxide phases (i.e. orthorhombic MoO3 and monoclinic Mo8O23). Intense XRD peaks at high pressure (i.e. 2.0×10-1 Torr) points out the formation of thick oxide layer on Mo-surface due to presence of large oxygen species in chamber and less oxide volatilization. Whereas, at low PO2 (6.5×10-2 and 7.5×10-2 Torr.) the reduced peak strength is owing to high oxide volatilization rate. SEM micrographs and thickness measurements also support XRD results and confirm that the optimum -2value of PO2 to deposited thicker and uniform oxide film on glass substrate is 7.5×10-2 Torr through plasma assistedoxidation process. Further to study the compositional properties, EDX of the sample M2 (the best sample) is carried out, which confirms that the stoichiometric ratio is less than 3 (i.e. 2.88). Less stoichiometric ratio again confirms the presence of sub oxides in oxide layers on Mo metal as evidenced by XRD results. All the observed results are well in consonance with each other.

Comparative study of the luminescence of structures with Ge nanocrystals formed by dry and wet oxidation of SiGe films

International Nuclear Information System (INIS)

RodrIguez, A; Ortiz, M I; Sangrador, J; RodrIguez, T; Avella, M; Prieto, A C; Torres, A; Jimenez, J; Kling, A; Ballesteros, C

2007-01-01

The luminescence emission of structures containing Ge nanocrystals embedded in a dielectric matrix obtained by dry and wet oxidation of polycrystalline SiGe layers has been studied as a function of the oxidation time and initial SiGe layer thickness. A clear relationship between the intensity of the luminescence, the structure of the sample, the formation of Ge nanocrystals and the oxidation process parameters that allows us to select the appropriate process conditions to get the most efficient emission has been established. The evolution of the composition and thickness of the growing oxides and the remaining SiGe layer during the oxidation processes has been characterized using Raman spectroscopy, x-ray diffraction, Fourier-transform infrared spectroscopy, Rutherford backscattering spectrometry and transmission electron microscopy. For dry oxidation, the luminescence appears suddenly, regardless of the initial SiGe layer thickness, when all the Si of the SiGe has been oxidized and the remaining layer of the segregated Ge starts to be oxidized forming Ge nanocrystals. Luminescence is observed as long as Ge nanocrystals are present. For wet oxidation, the luminescence appears from the first stages of the oxidation, and is related to the formation of Ge-rich nanoclusters trapped in the mixed (Si and Ge) growing oxide. A sharp increase of the luminescence intensity for long oxidation times is also observed, due to the formation of Ge nanocrystals by the oxidation of the layer of segregated Ge. For both processes the luminescence is quenched when the oxidation time is long enough to cause the full oxidation of the Ge nanocrystals. The intensity of the luminescence in the dry oxidized samples is about ten times higher than in the wet oxidized ones for equal initial thickness of the SiGe layer

Thickness dependent ferromagnetism in thermally decomposed NiO thin films

Energy Technology Data Exchange (ETDEWEB)

Ravikumar, Patta; Kisan, Bhagaban; Perumal, Alagarsamy, E-mail: perumal@iitg.ernet.in

2016-11-15

We report the effects of film thickness, annealing temperature and annealing environments on thermal decomposition behavior and resulting magnetic properties of NiO (t=50–300 nm) thin films. All the NiO films were prepared directly on thermally oxidized Si at ambient temperature using magnetron sputtering technique and post annealed at different temperatures (T{sub A}) under vacuum and oxygen atmospheres. As-deposited films exhibit face centered cubic structure with large lattice constant due to strain induced during sputtering process. With increasing T{sub A}, the lattice constant decreases due to the release of strain and thickness dependent thermal decomposition reaction of NiO into Ni has been observed for the NiO films annealed at 500 °C under vacuum condition. As a result, the antiferromagnetic nature of the as-deposited NiO films transforms into ferromagnetic one with dominant thickness dependent ferromagnetic behavior at room temperature. In addition, the existence of both Ni and NiO phases in the annealed NiO films shows noticeable exchange bias under field cooling condition. The behavior of thermal decomposition was not observed for the NiO films annealed under oxygen condition which results in no detectable change in the magnetic properties. The observed results are discussed on the basis of thickness dependent thermal decomposition in NiO films with increasing T{sub A} and changing annealing conditions. - Highlights: • Preparation of highly strained single layer NiO films with different thicknesses. • Study the effects of annealing under different environments on crystal structure. • Understanding the origin of thickness dependent thermal decomposition reaction. • Investigate the role of thermal decomposition reaction on the magnetic properties. • Study the interaction between NiO and Ni phases on the exchange bias mechanism.

Stages of polymer transformation during remote plasma oxidation (RPO) at atmospheric pressure

Science.gov (United States)

Luan, P.; Oehrlein, G. S.

2018-04-01

The interaction of cold temperature plasma sources with materials can be separated into two types: ‘direct’ and ‘remote’ treatments. Compared to the ‘direct’ treatment which involves energetic charged species along with short-lived, strongly oxidative neutral species, ‘remote’ treatment by the long-lived weakly oxidative species is less invasive and better for producing uniformly treated surfaces. In this paper, we examine the prototypical case of remote plasma oxidation (RPO) of polymer materials by employing a surface micro-discharge (in a N2/O2 mixture environment) treatment on polystyrene. Using material characterization techniques including real-time ellipsometry, x-ray photoelectron spectroscopy, and Fourier-transform infrared spectroscopy, the time evolution of polymer film thickness, refractive index, surface, and bulk chemical composition were evaluated. These measurements revealed three consecutive stages of polymer transformation, i.e. surface adsorption and oxidation, bulk film permeation and thickness expansion followed by the material removal as a result of RPO. By correlating the observed film thickness changes with simultaneously obtained chemical information, we found that the three stages were due to the three effects of weakly oxidative species on polymers: (1) surface oxidation and nitrate (R-ONO2) chemisorption, (2) bulk oxidation, and (3) etching. Our results demonstrate that surface adsorption and oxidation, bulk oxidation, and etching can all happen during one continuous plasma treatment. We show that surface nitrate is only adsorbed on the top few nanometers of the polymer surface. The polymer film expansion also provided evidence for the diffusion and reaction of long-lived plasma species in the polymer bulk. Besides, we found that the remote plasma etched surface was relatively rich in O-C=O (ester or carboxylic acid). These findings clarify the roles of long-lived weakly oxidative plasma species on polymers and advance

Heterogeneity in global vegetation and terrestrial climate change during the late Eocene to early Oligocene transition.

Science.gov (United States)

Pound, Matthew J; Salzmann, Ulrich

2017-02-24

Rapid global cooling at the Eocene - Oligocene Transition (EOT), ~33.9-33.5 Ma, is widely considered to mark the onset of the modern icehouse world. A large and rapid drop in atmospheric pCO 2 has been proposed as the driving force behind extinctions in the marine realm and glaciation on Antarctica. However, the global terrestrial response to this cooling is uncertain. Here we present the first global vegetation and terrestrial temperature reconstructions for the EOT. Using an extensive palynological dataset, that has been statistically grouped into palaeo-biomes, we show a more transitional nature of terrestrial climate change by indicating a spatial and temporal heterogeneity of vegetation change at the EOT in both hemispheres. The reconstructed terrestrial temperatures show for many regions a cooling that started well before the EOT and continued into the Early Oligocene. We conclude that the heterogeneous pattern of global vegetation change has been controlled by a combination of multiple forcings, such as tectonics, sea-level fall and long-term decline in greenhouse gas concentrations during the late Eocene to early Oligocene, and does not represent a single response to a rapid decline in atmospheric pCO 2 at the EOT.

Enhancing Performance of Large-Area Organic Solar Cells with Thick Film via Ternary Strategy.

Science.gov (United States)

Zhang, Jianqi; Zhao, Yifan; Fang, Jin; Yuan, Liu; Xia, Benzheng; Wang, Guodong; Wang, Zaiyu; Zhang, Yajie; Ma, Wei; Yan, Wei; Su, Wenming; Wei, Zhixiang

2017-06-01

Large-scale fabrication of organic solar cells requires an active layer with high thickness tolerability and the use of environment-friendly solvents. Thick films with high-performance can be achieved via a ternary strategy studied herein. The ternary system consists of one polymer donor, one small molecule donor, and one fullerene acceptor. The small molecule enhances the crystallinity and face-on orientation of the active layer, leading to improved thickness tolerability compared with that of a polymer-fullerene binary system. An active layer with 270 nm thickness exhibits an average power conversion efficiency (PCE) of 10.78%, while the PCE is less than 8% with such thick film for binary system. Furthermore, large-area devices are successfully fabricated using polyethylene terephthalate (PET)/Silver gride or indium tin oxide (ITO)-based transparent flexible substrates. The product shows a high PCE of 8.28% with an area of 1.25 cm 2 for a single cell and 5.18% for a 20 cm 2 module. This study demonstrates that ternary organic solar cells exhibit great potential for large-scale fabrication and future applications. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

A redox-assisted molecular assembly of molybdenum oxide amine composite nanobelts

International Nuclear Information System (INIS)

Luo Haiyan; Wei Mingdeng; Wei Kemei

2011-01-01

Research highlights: → Nanobelts of molybdenum oxide amine were first synthesized via a redox-assisted molecular assembly route. → These nanobelts are highly crystalline with a several tens of micrometers in length and 20-30 nm in thickness. - Abstract: In this paper, the nanobelts of molybdenum oxide amine composite were successfully synthesized via a redox-assisted molecular assembly route under the hydrothermal conditions. The synthesized nanobelts were characterized by XRD, SEM, TEM, TG and FT-IR measurements. The thickness of nanobelts is found to be ca. 20-30 nm and their lengths are up to several tens of micrometers. Based on a series of the experimental results, a possible model, redox-intercalation-exfoliation, was suggested for the formation of nanobelts of molybdenum oxide amine composite.

Film thickness dependence of phase separation and dewetting behaviors in PMMA/SAN blend films.

Science.gov (United States)

You, Jichun; Liao, Yonggui; Men, Yongfeng; Shi, Tongfei; An, Lijia

2010-09-21

Film thickness dependence of complex behaviors coupled by phase separation and dewetting in blend [poly(methyl methacrylate) (PMMA) and poly(styrene-ran-acrylonitrile) (SAN)] films on silicon oxide substrate at 175 °C was investigated by grazing incidence ultrasmall-angle X-ray scattering (GIUSAX) and in situ atomic force microscopy (AFM). It was found that the dewetting pathway was under the control of the parameter U(q0)/E, which described the initial amplitude of the surface undulation and original thickness of film, respectively. Furthermore, our results showed that interplay between phase separation and dewetting depended crucially on film thickness. Three mechanisms including dewetting-phase separation/wetting, dewetting/wetting-phase separation, and phase separation/wetting-pseudodewetting were discussed in detail. In conclusion, it is relative rates of phase separation and dewetting that dominate the interplay between them.

Pärast kõike / intervjueerinud Veiko Märka

Index Scriptorium Estoniae

1998-01-01

Vestlusring: Ain Mäeots, Merle Jääger, Helena Merzin, Margus Jaanovits, Riho Kütsar. Madis Kõivu võrukeelse näidendi 'Omavahelisi jutuajamisi tädi Elliga' lavastamisest Vanemuise teatris, lavastaja Ain Mäeots. Ka Kauksi Ülle kommentaar

Wetting of water on graphene nanopowders of different thicknesses

Science.gov (United States)

Bera, Bijoyendra; Shahidzadeh, Noushine; Mishra, Himanshu; Belyaeva, Liubov A.; Schneider, Grégory F.; Bonn, Daniel

2018-04-01

We study the wetting of graphene nanopowders by measuring the water adsorption in nanopowder flakes of different flake thicknesses. Chemical analysis shows that the graphene flakes, especially the thin ones, might exist in the partially oxidized state. We observe that the thinnest graphene nanopowder flakes do not adsorb water at all, independent of the relative humidity. Thicker flakes, on the other hand, do adsorb an increasing amount of water with increasing humidity. This allows us to assess their wetting behavior which is actually the result of the competition between the adhesive interactions of water and graphene and the cohesive interactions of water. Explicit calculation of these contributions from the van der Waals interactions confirms that the adhesive interactions between very thin flakes of graphene oxide and water are extremely weak, which makes the flakes superhydrophobic. "Liquid marble" tests with graphene nanopowder flakes confirm the superhydrophobicity. This shows that the origin of the much debated "wetting transparency" of graphene is due to the fact that a single graphene or graphene oxide layer does not contribute significantly to the adhesion between a wetting phase and the substrate.

Wetting of water on graphene nanopowders of different thicknesses

KAUST Repository

Bera, Bijoyendra; Shahidzadeh, Noushine; Mishra, Himanshu; Belyaeva, Liubov A.; Schneider, Gré gory F.; Bonn, Daniel

2018-01-01

We study the wetting of graphene nanopowders by measuring the water adsorption in nanopowder flakes of different flake thicknesses. Chemical analysis shows that the graphene flakes, especially the thin ones, might exist in the partially oxidized state. We observe that the thinnest graphene nanopowder flakes do not adsorb water at all, independent of the relative humidity. Thicker flakes, on the other hand, do adsorb an increasing amount of water with increasing humidity. This allows us to assess their wetting behavior which is actually the result of the competition between the adhesive interactions of water and graphene and the cohesive interactions of water. Explicit calculation of these contributions from the van der Waals interactions confirms that the adhesive interactions between very thin flakes of graphene oxide and water are extremely weak, which makes the flakes superhydrophobic. “Liquid marble” tests with graphene nanopowder flakes confirm the superhydrophobicity. This shows that the origin of the much debated “wetting transparency” of graphene is due to the fact that a single graphene or graphene oxide layer does not contribute significantly to the adhesion between a wetting phase and the substrate.

Wetting of water on graphene nanopowders of different thicknesses

KAUST Repository

Bera, Bijoyendra

2018-04-12

We study the wetting of graphene nanopowders by measuring the water adsorption in nanopowder flakes of different flake thicknesses. Chemical analysis shows that the graphene flakes, especially the thin ones, might exist in the partially oxidized state. We observe that the thinnest graphene nanopowder flakes do not adsorb water at all, independent of the relative humidity. Thicker flakes, on the other hand, do adsorb an increasing amount of water with increasing humidity. This allows us to assess their wetting behavior which is actually the result of the competition between the adhesive interactions of water and graphene and the cohesive interactions of water. Explicit calculation of these contributions from the van der Waals interactions confirms that the adhesive interactions between very thin flakes of graphene oxide and water are extremely weak, which makes the flakes superhydrophobic. “Liquid marble” tests with graphene nanopowder flakes confirm the superhydrophobicity. This shows that the origin of the much debated “wetting transparency” of graphene is due to the fact that a single graphene or graphene oxide layer does not contribute significantly to the adhesion between a wetting phase and the substrate.

Thickness and composition of ultrathin SiO2 layers on Si

International Nuclear Information System (INIS)

Marel, C. van der; Verheijen, M.A.; Tamminga, Y.; Pijnenburg, R.H.W.; Tombros, N.; Cubaynes, F.

2004-01-01

Ultrathin SiO 2 layers are of importance for the semiconductor industry. One of the techniques that can be used to determine the chemical composition and thickness of this type of layers is x-ray photoelectron spectroscopy (XPS). As shown by Seah and Spencer [Surf. Interface Anal. 33, 640 (2002)], it is not trivial to characterize this type of layer by means of XPS in a reliable way. We have investigated a series of ultrathin layers of SiO 2 on Si (in the range from 0.3 to 3 nm) using XPS. The samples were also analyzed by means of transmission electron microscopy (TEM), Rutherford backscattering (RBS), and ellipsometry. The thickness of the SiO 2 layers (d) was determined from the XPS results using three different approaches: the 'standard' equation (Seah and Spencer) for d, an overlayer-substrate model calculation, and the QUASES-Tougaard [Surf. Interface Anal. 26, 249 (1998), QUASES-Tougaard: Software package for Quantitative Analysis of Surfaces by Electron Spectroscopy, version 4.4 (2000); http://www.quases.com] method. Good agreement was obtained between the results of XPS analyses using the 'standard' equation, the overlayer-substrate model calculation, and RBS results. The QUASES-Tougaard results were approximately 62% above the other XPS results. The optical values for the thickness were always slightly higher than the thickness according to XPS or RBS. Using the model calculation, these (relatively small) deviations from the optical results could be explained as being a consequence of surface contaminations with hydrocarbons. For a thickness above 2.5 nm, the TEM results were in good agreement with the results obtained from the other techniques (apart from QUASES-Tougaard). Below 2.5 nm, significant deviations were found between RBS, XPS, and optical data on the one hand and TEM results on the other hand; the deviations became larger as the thickness of the SiO 2 decreased. This effect may be related to interface states of oxygen, which have been

Study of the bismuth oxide concentration required to provide Portland cement with adequate radiopacity for endodontic use.

Science.gov (United States)

Bueno, Carlos Eduardo da Silveira; Zeferino, Eduardo Gregatto; Manhães, Luiz Roberto Coutinho; Rocha, Daniel Guimarães Pedro; Cunha, Rodrigo Sanches; De Martin, Alexandre Sigrist

2009-01-01

The purpose of this study was to determine the ideal concentration of bismuth oxide in white Portland cement to provide it with sufficient radiopacity for use as an endodontic material (ADA specification #57). 2-mm thick standardized test specimens of white MTA and of white Portland cement, as controls, and of white Portland cement with the experimental addition of 5%, 10%, 15%, 20%, 25% or 30% of bismuth oxide were radiographed and compared with various thicknesses of pure aluminum, using optic density to determine the observed grayscale levels of radiopacity in a scale ranging from 0 to 255. The data was submitted to ANOVA (pcement with 0%, 5%, 10%, 15%, 20%, 25% and 30% of bismuth oxide presented mean readings of 63.3, 95.7, 110.7, 142.7, 151.3, 161.0 and 180.0 respectively. MTA presented a mean reading of 157.3. The readings of MTA and white Portland cement with 15% bismuth oxide did not differ significantly from the reading observed for a thickness of 4 mm of aluminum (145.3), which is considered ideal for a test specimen by ADA specification #57 (2 mm above the thickness of the test specimen). White MTA and white Portland cement with 15% bismuth oxide presented the radiopacity required for an endodontic cement.

Oxidation of vanadium metal in oxygen plasma and their characterizations

Science.gov (United States)

Sharma, Rabindar Kumar; Singh, Megha; Kumar, Prabhat; Reddy, G. B.

2015-09-01

In this report, the role of oxygen plasma on oxidation of vanadium (V) metal and the volatilization of its oxides has been studied as a function of source (V metal strip) temperature (Tss) and oxygen partial pressure (PO2). The presence of O2-plasma not only enhances the oxidation rate but also ficilitates in transport of oxide molecules from metal to substrate, as confirmed by the simultanous deposition of oxide film onto substrate. Both the oxidized metal strips and oxide films deposited on substrates are characterized separately. The structural and vibrational results evidence the presence of two different oxide phases (i.e. orthorhombic V2O5 and monocilinic V O2) in oxide layers formed on V metal strips, whereas the oxide films deposited on substrates exhibit only orthorhombic phase (i.e. V2O5). The decrease in peak intensities recorded from heated V metal strips on increasing Tss points out the increment in the rate of oxide volatilization, which also confirms by the oxide layer thickness measurements. The SEM results show the noticeable surface changes on V-strips as the function of Tss and PO2 and their optimum values are recorded to be 500 ˚ C and 7.5 × 10-2 Torr, respectively to deposit maximum thick oxide film on substrate. The formation of microcracks on oxidized V-strips, those responsible to countinue oxidation is also confirmed by SEM results. The compositional study of oxide layers formed on V-strips, corroborates their pureness and further assures about the existence of mixed oxide phases. The effect of oxygen partial pressure on oxidation of V-metal has also been discussed in the present report. All the results are well in agreement to each other.

Thickness characteristics of YBaCuO system thin films prepared by RF magnetron sputtering

International Nuclear Information System (INIS)

Furuhashi, Hideo; Jinno, Makoto; Takashima, Osamu; Uchida, Yoshiyuki; Maeda, Akinori; Kojima, Kenzo; Ochiai, Shizuyasu; Ohashi, Asao

1994-01-01

The practical use of oxide high temperature superconductors for electronics field has been advanced. The oxide high temperature superconductor thin films is very sensitive to the production conditions, and their making with good reproducibility is difficult. In this study, the method of producing the thin films having good quality with good reproducibility by RF magnetron sputtering, and the relation of the film thickness with the superconductivity characteristics of YBaCuO system thin films in the different methods of substrate washing were examined. The sputtering conditions are shown. For the purpose of preventing the worsening of the film quality due to the reverse sputtering of oxygen negative ions to the thin film surface, sputtering gas pressure was set up high at 30 Pa. The film thickness and the temperature-resistance characteristics were measured. The experimental method and the experimental results are reported. By keeping the temperature on substrate surfaces constant, the reproducibility in the production of the thin films was improved remarkably. The effect of substrate washing was large. (K.I.)

Effect of Firing Temperature on Humidity Sensing Properties of SnO2 Thick Film Resistor

Directory of Open Access Journals (Sweden)

R. Y. Borse

2009-12-01

Full Text Available Thick films of SnO2 were prepared using standard screen printing technique. The films were dried and fired at different temperatures. Tin-oxide is an n-type wide band gap semiconductor, whose resistance is described as a function of relative humidity. An increasing firing temperature on SnO2 film increases the sensitivity to humidity. The parameters such as sensitivity, response times and hysteresis of the SnO2 film sensors have been evaluated. The thick films were characterized by XRD, SEM and EDAX and grain size, composition of elements, relative phases are obtained.

Materials science, integration, and performance characterization of high-dielectric constant thin film based devices

Science.gov (United States)

Fan, Wei

, compared with pure TiO2. A modified 3-element model was adopted to extract the true C-V behavior of the TiAlOx-based MOS capacitor. Extremely small equivalent oxide thickness (EOT) less than 0.5 nm with dielectric leakage 4˜5 magnitude lower than that for SiO2 has been achieved on TiAlOx layer as a result of its excellent dielectric properties.

Indium--tin oxide films radio frequency sputtered from specially formulated high density indium--tin oxide targets

International Nuclear Information System (INIS)

Kulkarni, S.; Bayard, M.

1991-01-01

High density ITO (indium--tin oxide) targets doped with Al 2 O 3 and SiO 2 manufactured in the Tektronix Ceramics Division have been used to rf sputter ITO films of various thicknesses on borosilicate glass substrates. Sputtering in an oxygen--argon gas mixture and annealing in forming gas, resulted in ITO films exhibiting 90% transmission at 550 nm and a sheet resistance of 15 Ω/sq for a thickness of 1100 A. Sputtering in an oxygen--argon gas mixture and annealing in air increased sheet resistance without a large effect on the transmission. Films sputtered in argon gas alone were transparent in the visible and the sheet resistance was found to be 100--180 Ω/sq for the same thickness, without annealing

Room temperature plasma oxidation: A new process for preparation of ultrathin layers of silicon oxide, and high dielectric constant materials

International Nuclear Information System (INIS)

Tinoco, J.C.; Estrada, M.; Baez, H.; Cerdeira, A.

2006-01-01

In this paper we present basic features and oxidation law of the room temperature plasma oxidation (RTPO), as a new process for preparation of less than 2 nm thick layers of SiO 2 , and high-k layers of TiO 2 . We show that oxidation rate follows a potential law dependence on oxidation time. The proportionality constant is function of pressure, plasma power, reagent gas and plasma density, while the exponent depends only on the reactive gas. These parameters are related to the physical phenomena occurring inside the plasma, during oxidation. Metal-Oxide-Semiconductor (MOS) capacitors fabricated with these layers are characterized by capacitance-voltage, current-voltage and current-voltage-temperature measurements. Less than 2.5 nm SiO 2 layers with surface roughness similar to thermal oxide films, surface state density below 3 x 10 11 cm -2 and current density in the expected range for each corresponding thickness, were obtained by RTPO in a parallel-plate reactor, at 180 mW/cm 2 and pressure range between 9.33 and 66.5 Pa (0.07 and 0.5 Torr) using O 2 and N 2 O as reactive gases. MOS capacitors with TiO 2 layers formed by RTPO of sputtered Ti layers are also characterized. Finally, MOS capacitors with stacked layers of TiO 2 over SiO 2 , both layers obtained by RTPO, were prepared and evaluated to determine the feasibility of the use of TiO 2 as a candidate for next technology nodes

Tuning the conductivity threshold and carrier density of two-dimensional electron gas at oxide interfaces through interface engineering

Directory of Open Access Journals (Sweden)

H. J. Harsan Ma

2015-08-01

Full Text Available The two-dimensional electron gas (2DEG formed at the perovskite oxides heterostructures is of great interest because of its potential applications in oxides electronics and nanoscale multifunctional devices. A canonical example is the 2DEG at the interface between a polar oxide LaAlO3 (LAO and non-polar SrTiO3 (STO. Here, the LAO polar oxide can be regarded as the modulating or doping layer and is expected to define the electronic properties of 2DEG at the LAO/STO interface. However, to practically implement the 2DEG in electronics and device design, desired properties such as tunable 2D carrier density are necessary. Here, we report the tuning of conductivity threshold, carrier density and electronic properties of 2DEG in LAO/STO heterostructures by insertion of a La0.5Sr0.5TiO3 (LSTO layer of varying thicknesses, and thus modulating the amount of polarization of the oxide over layers. Our experimental result shows an enhancement of carrier density up to a value of about five times higher than that observed at the LAO/STO interface. A complete thickness dependent metal-insulator phase diagram is obtained by varying the thickness of LAO and LSTO providing an estimate for the critical thickness needed for the metallic phase. The observations are discussed in terms of electronic reconstruction induced by polar oxides.

Oxidation and creep failure of alloy 617 foils at high temperature

Energy Technology Data Exchange (ETDEWEB)

Sharma, S.K.; Ko, G.D.; Li, F.X. [Department of Mechanical Engineering, Chonnam National University, Gwangju 500 757 (Korea, Republic of); Kang, K.J. [Department of Mechanical Engineering, Chonnam National University, Gwangju 500 757 (Korea, Republic of)], E-mail: kjkang@chonnam.ac.kr

2008-08-31

The microstructure of thermally grown oxides (TGO) and the creep properties of alloy 617 were investigated. Oxidation and creep tests were performed on 100 {mu}m thick foils at 800-1000 deg. C in air environment, while the thickness of TGO was monitored in situ. According to energy dispersive X-ray (EDX) mapping micrographs observation, superficial dense oxides, chromia (Cr{sub 2}O{sub 3}), which was thermodynamically unstable at 1000 deg. C, and discrete internal oxides, alumina ({alpha}-Al{sub 2}O{sub 3}), were found. Consequently, the weight of the foil specimen decreased due to the spalling and volatilization of the Cr{sub 2}O{sub 3} oxide layer after an initial weight-gaining. Secondary and tertiary creeps were observed at 800 deg. C, while the primary, secondary and tertiary creeps were observed at 1000 deg. C. Dynamic recrystallization occurred at 800 deg. C and 900 deg. C, while partial dynamic recrystallization at 1000 deg. C. The apparent activation energy, Q{sub app}, for the creep deformation was 271 kJ/mol, which was independent of the applied stress.

Electrodeposited porous and amorphous copper oxide film for application in supercapacitor

Energy Technology Data Exchange (ETDEWEB)

Patake, V.D. [Thin Film Physics Laboratory, Department of Physics, Shivaji University, Kolhapur 416004, (M.S.) (India); Joshi, S.S. [Clean Energy Research Center, Korea Institute of Science and Technology, Cheongryang, Seoul 130-650 (Korea, Republic of); Lokhande, C.D. [Thin Film Physics Laboratory, Department of Physics, Shivaji University, Kolhapur 416004, (M.S.) (India); Clean Energy Research Center, Korea Institute of Science and Technology, Cheongryang, Seoul 130-650 (Korea, Republic of)], E-mail: l_chandrakant@yahoo.com; Joo, Oh-Shim [Clean Energy Research Center, Korea Institute of Science and Technology, Cheongryang, Seoul 130-650 (Korea, Republic of)], E-mail: joocat@kist.rre.kr

2009-03-15

In present study, the porous amorphous copper oxide thin films have been deposited from alkaline sulphate bath. The cathodic electrodeposition method was employed to deposit copper oxide film at room temperature on stainless steel substrate. Their structural and surface morphological properties were investigated by means of X-ray diffraction (XRD) and scanning electron micrograph (SEM), respectively. To propose this as a new material for possible application in the supercapacitor, its electrochemical properties have been studied in aqueous 1 M Na{sub 2}SO{sub 4} electrolyte using cyclic voltammetry. The structural analysis from XRD pattern showed the formation of amorphous copper oxide film on the substrate. The surface morphological studies from scanning electron micrographs revealed the formation of porous cauliflower-like copper oxide film. The cyclic voltammetric curves showed symmetric nature and increase in capacitance with increase in film thickness. The maximum specific capacitance of 36 F g{sup -1} was exhibited for the 0.6959 mg cm{sup -2} film thickness. This shows that low-cost copper oxide electrode will be a potential application in supercapacitor.

iNOS-dependent increase in colonic mucus thickness in DSS-colitic rats.

Directory of Open Access Journals (Sweden)

Olof Schreiber

Full Text Available AIM: To investigate colonic mucus thickness in vivo in health and during experimental inflammatory bowel disease. METHODS: Colitis was induced with 5% DSS in drinking water for 8 days prior to experiment, when the descending colonic mucosa of anesthetized rats was studied using intravital microscopy. Mucus thickness was measured with micropipettes attached to a micromanipulator. To assess the contributions of NOS and prostaglandins in the regulation of colonic mucus thickness, the non-selective NOS-inhibitor L-NNA (10 mg/kg bolus followed by 3 mg/kg/h, the selective iNOS-inhibitor L-NIL (10 mg/kg bolus followed by 3 mg/kg/h and the non-selective COX-inhibitor diclofenac (5 mg/kg were administered intravenously prior to experiment. To further investigate the role of iNOS in the regulation of colonic mucus thickness, iNOS -/- mice were used. RESULTS: Colitic rats had a thicker firmly adherent mucus layer following 8 days of DSS treatment than untreated rats (88±2 µm vs 76±1 µm. During induction of colitis, the thickness of the colonic mucus layer initially decreased but was from day 3 significantly thicker than in untreated rats. Diclofenac reduced the mucus thickness similarly in colitic and untreated rats (-16±5 µm vs -14±2 µm. While L-NNA had no effect on colonic mucus thickness in DSS or untreated controls (+3±2 µm vs +3±1 µm, L-NIL reduced the mucus thickness significantly more in colitic rats than in controls (-33±4 µm vs -10±3 µm. The importance of iNOS in regulating the colonic mucus thickness was confirmed in iNOS-/- mice, which had thinner colonic mucus than wild-type mice (35±3 µm vs 50±2 µm, respectively. Furthermore, immunohistochemistry revealed increased levels of iNOS in the colonic surface epithelium following DSS treatment. CONCLUSION: Both prostaglandins and nitric oxide regulate basal colonic mucus thickness. During onset of colitis, the thickness of the mucus layer is initially reduced followed by an i

Effect of LiOH, NaOH and KOH on corrosion and oxide microstructure of Zr-based alloys

International Nuclear Information System (INIS)

Jeong, Y.H.; Kim, H.G.; Jung, Y.H.; Ruhmann, H.

1999-01-01

Long-term corrosion test, SIMS analysis, and TEM microstructural study were carried out to investigate the corrosion characteristics and mechanism of Zr alloys in alkali hydroxides. The corrosion tests were performed in solutions of LiOH, NaOH, KOH, RbOH, and CsOH at 350 deg. C for 500 days. SIMS analysis was performed for the specimens prepared to have an equal oxide thickness. TEM studies on the specimens with an equal oxide thickness in various solutions in both pre- and post-transition regimes were also conducted. The corrosion rate in alkali hydroxide solutions was observed to decrease as the ionic radius of alkali cation was increased. The penetration depth of cation into the oxide decreases with increasing the ionic radius of cation. Even though the oxide thickness was equal, the different oxide morphologies were observed in specimens. Namely, in LiOH solution the oxide morphology was transformed early from columnar to equiaxed structure. However, in KOH solution the columnar structure was maintained up to post-transition regime. Based on the corrosion test, SIMS analysis, and microstructural study, the cation is considered to control the corrosion in a alkali hydroxide solution and its effect is dependent on the concentration of alkali and the oxide thickness. The slight acceleration of the corrosion rate at a low concentration is thought to be caused by cation incorporation into oxide while the significant acceleration at a high concentration is due to the transformation of oxide microstructure that would be induced by cation incorporation. KOH was shown not to affect significantly the corrosion and the hydrogen pickup of Zircaloy. Therefore, it has a potential for PWR application only from the point of view of Zircaloy corrosion. (author)

The role of extra-atomic relaxation in determining Si2p binding energy shifts at silicon/silicon oxide interfaces

International Nuclear Information System (INIS)

Zhang, K.Z.; Greeley, J.N.; Banaszak Holl, M.M.; McFeely, F.R.

1997-01-01

The observed binding energy shift for silicon oxide films grown on crystalline silicon varies as a function of film thickness. The physical basis of this shift has previously been ascribed to a variety of initial state effects (Si endash O ring size, strain, stoichiometry, and crystallinity), final state effects (a variety of screening mechanisms), and extrinsic effects (charging). By constructing a structurally homogeneous silicon oxide film on silicon, initial state effects have been minimized and the magnitude of final state stabilization as a function of film thickness has been directly measured. In addition, questions regarding the charging of thin silicon oxide films on silicon have been addressed. From these studies, it is concluded that initial state effects play a negligible role in the thickness-dependent binding energy shift. For the first ∼30 Angstrom of oxide film, the thickness-dependent binding energy shift can be attributed to final state effects in the form of image charge induced stabilization. Beyond about 30 Angstrom, charging of the film occurs. copyright 1997 American Institute of Physics

Electrical transport through single-wall carbon nanotube-anodic aluminum oxide-aluminum heterostructures

International Nuclear Information System (INIS)

Kukkola, Jarmo; Rautio, Aatto; Sala, Giovanni; Pino, Flavio; Toth, Geza; Leino, Anne-Riikka; Maeklin, Jani; Jantunen, Heli; Uusimaeki, Antti; Kordas, Krisztian; Gracia, Eduardo; Terrones, Mauricio; Shchukarev, Andrey; Mikkola, Jyri-Pekka

2010-01-01

Aluminum foils were anodized in sulfuric acid solution to form thick porous anodic aluminum oxide (AAO) films of thickness ∼6 μm. Electrodes of carboxyl-functionalized single-wall carbon nanotube (SWCNT) thin films were inkjet printed on the anodic oxide layer and the electrical characteristics of the as-obtained SWCNT-AAO-Al structures were studied. Nonlinear current-voltage transport and strong temperature dependence of conduction through the structure was measured. The microstructure and chemical composition of the anodic oxide layer was analyzed using transmission and scanning electron microscopy as well as x-ray photoelectron spectroscopy. Schottky emission at the SWCNT-AAO and AAO-Al interfaces allowed by impurity states in the anodic aluminum oxide film together with ionic surface conduction on the pore walls of AAO gives a reasonable explanation for the measured electrical conduction. Calcined AAO is proposed as a dielectric material for SWCNT-field effect transistors.

Cyclic oxidation behaviour of different treated CoNiCrAlY coatings

Energy Technology Data Exchange (ETDEWEB)

Marginean, G. [University of Applied Sciences Gelsenkirchen, Neidenburger Str. 43, 45877 Gelsenkirchen (Germany); Utu, D., E-mail: dutu@eng.upt.ro [University ' Politehnica' Timisoara, Faculty of Mechanical Engineering, Blv. Mihai Viteazu 1, 300222 Timisoara (Romania)

2012-08-01

High velocity oxygen fuel (HVOF) spraying method was used in order to obtain very dense and good adhesive CoNiCrAlY-coatings deposited onto nickel-based alloy. The coatings were differently treated (preoxidized, vacuum treated or electron beam irradiated) before their exposure to cyclic oxidation tests in air at 1000 Degree-Sign C for periods up to 5 h. Changes of the coatings morphology and structure were analysed by scanning electron microscopy (SEM) and X-ray diffraction technique (XRD). The surface temperature of the samples was measured during cooling, between the oxidation cycles, and finally was associated with the thickness of the grown protective oxide scale on the CoNiCrAlY-surface. The experimental results demonstrated that depending on the thickness respectively on the different structures of the grown oxide scale, the cooling rate of the sample surface will be different as well.

Analysis on Propagation Characteristics and Experimental Verification of A1 Circumferential Waves in Nuclear Fuel Rods Coated with Oxide Layers

International Nuclear Information System (INIS)

Joo, Young Sang; Jung, Hyun Kyu; Cheong, Yong Moo; Ih, Jeong Guon

1999-01-01

The resonance scattering of acoustic waves from the cylindrical shells of nuclear fuel rods coated with oxide layers has been theoretically modeled and numerically analyzed for the propagation characteristics of the circumferential waves. The normal mode solutions of the scattering pressure of the coated shells have been obtained. The pure resonance components have been isolated using the newly proposed inherent background coefficients. The propagation characteristics of resonant circumferential waves for the shells coated with oxide layers are affected by the presence and the thickness of an oxide layer. The characteristics have been experimentally confirmed through the method of isolation and identification of resonances. The change of the phase velocity of the A 1 circumferential wave mode for the coated shell is negligible at the specified partial waves in spite of the presence of the oxide layer and the increase in coating thickness. Utilizing the invariability characteristics of the phase velocity of the A 1 mode, the oxide layer thickness of the coated shells can be estimated. A new nondestructive technique for the relative measurement of the coating thickness of coated shells has been proposed

Plasma electrolytic oxidation of AMCs

Science.gov (United States)

Morgenstern, R.; Sieber, M.; Lampke, T.

2016-03-01

Aluminum Matrix Composites (AMCs) consisting of high-strength alloys and ceramic reinforcement phases exhibit a high potential for security relevant lightweight components due to their high specific mechanical properties. However, their application as tribologically stressed components is limited because of their susceptibility against fatigue wear and delamination wear. Oxide ceramic protective coatings produced by plasma electrolytic oxidation (PEO) can solve these problems and extend the possible applications of AMCs. The substrate material was powder metallurgically processed using alloy EN AW 2017 and SiC or Al2O3 particles. The influence of material properties like particle type, size and volume fraction on coating characteristics is clarified within this work. An alkaline silicate electrolyte was used to produce PEO coatings with technically relevant thicknesses under bipolar-pulsed current conditions. Coating properties were evaluated with regard to morphology, chemical composition, hardness and wear resistance. The particle type proved to have the most significant effect on the coating properties. Whereas compactness and thickness are not deteriorated by the incorporation of thermodynamically stable alumina particles, the decomposition of silica particles during the PEO processes causes an increase of the porosity. The higher silica particle content decreases also the coating thickness and hardness, which leads in particular to reduction of the wear resistance of the PEO coatings. Finally, different approaches for the reduction of the coating porosity of silica reinforced AMCs are discussed.

Thickness-modulated anisotropic ferromagnetism in Fe-doped epitaxial HfO2 thin films

Science.gov (United States)

Liu, Wenlong; Liu, Ming; Zhang, Ruyi; Ma, Rong; Wang, Hong

2017-10-01

Epitaxial tetragonal Fe-doped Hf0.95Fe0.05O2 (FHO) thin films with various thicknesses were deposited on (001)-oriented NdCaAlO4 (NCAO) substrates by using a pulsed laser deposition (PLD) system. The crystal structure and epitaxial nature of the FHO thin films were confirmed by typical x-ray diffraction (XRD) θ-2θ scan and reciprocal space mapping (RSM). The results indicate that two sets of lattice sites exist with two different crystal orientations [(001) and (100)] in the thicker FHO thin films. Further, the intensity of the (100) direction increases with the increase in thicknesses, which should have a significant effect on the anisotropic magnetization of the FHO thin films. Meanwhile, all the FHO thin films possess a tetragonal phase structure. An anisotropy behavior in magnetization has been observed in the FHO thin films. The anisotropic magnetization of the FHO thin films is slowly weakened as the thickness increases. Meanwhile, the saturation magnetization (Ms) of both in-plane and out-of-plane decreases with the increase in the thickness. The change in the anisotropic magnetization and Ms is attributed to the crystal lattice and the variation in the valence of Fe ions. These results indicate that the thickness-modulated anisotropic ferromagnetism of the tetragonal FHO epitaxial thin films is of potential use for the integration of metal-oxide semiconductors with spintronics.

Hard X-ray photoemission spectroscopy of transition-metal oxide thin films and interfaces

International Nuclear Information System (INIS)

Wadati, H.; Fujimori, A.

2013-01-01

Highlights: •Photoemission spectroscopy is a powerful technique to study the electronic structures of transition-metal oxides. •Hard X-ray photoemission spectroscopy (HXPES) is a new type of photoemission spectroscopy which can probe bulk states. •HXPES is very suitable for studying oxide thin films such as the composition dependence and the film thickness dependence. -- Abstract: Photoemission spectroscopy is a powerful experimental technique to study the electronic structures of solids, especially of transition-metal oxides. Recently, hard X-ray photoemission spectroscopy (HXPES) has emerged as a more relevant experimental technique to obtain clear information about bulk states. Here, we describe how HXPES can be conveniently applied to study the interesting subjects on oxide thin films such as the composition dependence and the film thickness dependence of the electronic structures and the interfacial electronic structure of multilayers

Local electrical properties of thermally grown oxide films formed on duplex stainless steel surfaces

Science.gov (United States)

Guo, L. Q.; Yang, B. J.; He, J. Y.; Qiao, L. J.

2018-06-01

The local electrical properties of thermally grown oxide films formed on ferrite and austenite surfaces of duplex stainless steel at different temperatures were investigated by Current sensing atomic force microscopy, X-ray Photoelectron Spectroscopy (XPS) and Auger Electron Spectroscopy (AES). The current maps and XPS/AES analyses show that the oxide films covering austenite and ferrite surfaces formed at different temperatures exhibit different local electrical characteristics, thickness and composition. The dependence of electrical conductivity of oxide films covering austenite and ferrite surface on the formation temperature is attributed to the film thickness and semiconducting structures, which is intrinsically related to thermodynamics and kinetics process of film grown at different temperature. This is well elucidated by corresponding semiconductor band structures of oxide films formed on austenite and ferrite phases at different temperature.

Effect of oxidation and annealing temperature on optical and ...

Indian Academy of Sciences (India)

Administrator

Tin oxide thin films were deposited on glass substrate with 100 nm thickness of Sn, which was coated by magnetron sputtering followed by thermal oxidation at different temperatures. ... Annealing of the samples at 500–650 °C caused the transmittance and optical ..... (αhν)1/2 and (αhν)1/3 to determine the Eg. (b) They used.

Characterization of ultrasonic spray pyrolysed ruthenium oxide thin films

Energy Technology Data Exchange (ETDEWEB)

Patil, P.S.; Ennaoui, E.A.; Lokhande, C.D.; Mueller, M.; Giersig, M.; Diesner, K.; Tributsch, H. [Hahn-Meitner-Institut Berlin GmbH (Germany). Bereich Physikalische Chemie

1997-11-21

The ultrasonic spray pyrolysis (USP) technique was employed to deposit ruthenium oxide thin films. The films were prepared at 190 C substrate temperature and further annealed at 350 C for 30 min in air. The films were 0.22 {mu} thick and black grey in color. The structural, compositional and optical properties of ruthenium oxide thin films are reported. Contactless transient photoconductivity measurement was carried out to calculate the decay time of excess charge carriers in ruthenium oxide thin films. (orig.) 28 refs.

Study of the oxidation kinetics of the MA 956 superalloy

International Nuclear Information System (INIS)

Garcia-Alonso, M.C.; Gonzalez-Carrasco, J.L.; Escudero, M.L.

1998-01-01

This work deals with the oxidation kinetics of the MA 956 superalloy in the temperature range of 800-1,200 degree centigree for up to 200 h exposure. During oxidation the alloy develops a fine, compact and very well adhered α-alumina layer, the thickness of which increases with increasing time and temperature. The oxidation kinetics obeys a sub parabolic type behaviour. The scale growth seems to occur by two different oxidation mechanisms; above 1,050 degree centigree, the oxidation process would be controlled by α-alumina, and below 900 degree centigree by γ-alumina. (Author) 17 refs

Highly flexible sub-1 nm tungsten oxide nanobelts as efficient desulfurization catalysts.

Science.gov (United States)

He, Jie; Liu, Huiling; Xu, Biao; Wang, Xun

2015-03-01

Ultrathin tungsten oxide nanobelts are successfully synthesized via a facile solvothermal method. Sub-1 nm thickness and hydrophobic surface property endow the nanobelts with flexibility, viscosity, gelation, and good catalytic performance in oxidative desulfurization. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Production and characterization of aluminium oxide nanoshells on spray dried lactose.

Science.gov (United States)

Hellrup, Joel; Rooth, Mårten; Johansson, Anders; Mahlin, Denny

2017-08-30

Atomic layer deposition (ALD) enables deposition of dense nanometer thick metal oxide nanoshells on powder particles with precise thickness control. This leads to products with low weight fraction coating, also when depositing on nano- or micron sized powder particles. This study aimed at investigating the aluminium oxide nanoshell thickness required to prevent moisture sorption. The nanoshells were produced with ALD on spray-dried lactose, which is amorphous and extremely hygroscopic. The particles were studied with dynamic vapor sorption between 0 and 50% RH, light scattering, scanning electron microscopy, X-ray diffraction, differential scanning calorimetry, and polarized light microscopy. The ALD did not induce any recrystallization of the amorphous lactose. The dynamic vapor sorption indicated that the moisture sorption was almost completely inhibited by the nanoshell. Neat amorphous lactose rapidly recrystallized upon moisture exposure. However, only ca. 15% of the amorphous lactose particles recrystallized of a sample with 9% (by weight) aluminium oxide nanoshell at storage for six months upon 75% RH/40°C, which indicate that the moisture sorption was completely inhibited in the majority of the particles. In conclusion, the aluminium oxide nanoshells prevented moisture sorption and dramatically improved the long term physical stability of amorphous lactose. This shows the potential of the ALD-technique to protect drug microparticles. Copyright © 2017 Elsevier B.V. All rights reserved.

Unidirectional oxide hetero-interface thin-film diode

International Nuclear Information System (INIS)

Park, Youngmin; Lee, Eungkyu; Lee, Jinwon; Lim, Keon-Hee; Kim, Youn Sang

2015-01-01

The unidirectional thin-film diode based on oxide hetero-interface, which is well compatible with conventional thin-film fabrication process, is presented. With the metal anode/electron-transporting oxide (ETO)/electron-injecting oxide (EIO)/metal cathode structure, it exhibits that electrical currents ohmically flow at the ETO/EIO hetero-interfaces for only positive voltages showing current density (J)-rectifying ratio of ∼10 5 at 5 V. The electrical properties (ex, current levels, and working device yields) of the thin-film diode (TFD) are systematically controlled by changing oxide layer thickness. Moreover, we show that the oxide hetero-interface TFD clearly rectifies an AC input within frequency (f) range of 10 2  Hz < f < 10 6  Hz, providing a high feasibility for practical applications

Unidirectional oxide hetero-interface thin-film diode

Energy Technology Data Exchange (ETDEWEB)

Park, Youngmin; Lee, Eungkyu; Lee, Jinwon; Lim, Keon-Hee [Program in Nano Science and Technology, Graduate School of Convergence Science and Technology, Seoul National University, Seoul 151-742 (Korea, Republic of); Kim, Youn Sang, E-mail: younskim@snu.ac.kr [Program in Nano Science and Technology, Graduate School of Convergence Science and Technology, Seoul National University, Seoul 151-742 (Korea, Republic of); Advanced Institute of Convergence Technology, Gyeonggi-do 443-270 (Korea, Republic of)

2015-10-05

The unidirectional thin-film diode based on oxide hetero-interface, which is well compatible with conventional thin-film fabrication process, is presented. With the metal anode/electron-transporting oxide (ETO)/electron-injecting oxide (EIO)/metal cathode structure, it exhibits that electrical currents ohmically flow at the ETO/EIO hetero-interfaces for only positive voltages showing current density (J)-rectifying ratio of ∼10{sup 5} at 5 V. The electrical properties (ex, current levels, and working device yields) of the thin-film diode (TFD) are systematically controlled by changing oxide layer thickness. Moreover, we show that the oxide hetero-interface TFD clearly rectifies an AC input within frequency (f) range of 10{sup 2} Hz < f < 10{sup 6} Hz, providing a high feasibility for practical applications.

Photon energy response of an aluminum oxide TLD environmental dosimeter

International Nuclear Information System (INIS)

Olsher, R.H.

1992-01-01

Because of aluminum oxide's significant advantage in sensitivity (about a factor of 30) over LiF, minimal fading characteristics and ease of processing, aluminum oxide thermoluminescent dosimeters (TLDS) are being phased in at Los alamos for environmental monitoring of photon radiation. The new environmental dosimeter design consists of a polyethylene holder, about 0. 5 cm thick, loaded with a stack of four aluminum oxide TLD chips, each 1 mm thick and 5 mm in diameter. As part of the initial evaluation of the new design, the photon energy response of the dosimeter was calculated over the range from 10 keV to 1 MeV. Specific goals of the analysis included the determination of individual chip response in the stack, assessment of the response variation due to TLD material (i.e., LiF versus A1 2 O 3 ), and the effect of copper filtration in flattening the response

Factorial Validity of the Toronto Alexithymia Scale (TAS-20) in Clinical Samples: A Critical Examination of the Literature and a Psychometric Study in Anorexia Nervosa.

Science.gov (United States)

Torres, Sandra; Guerra, Marina P; Miller, Kylee; Costa, Patrício; Cruz, Inês; Vieira, Filipa M; Brandão, Isabel; Roma-Torres, António; Rocha, Magda

2018-03-30

There is extensive use of the 20-item Toronto Alexithymia Scale (TAS-20) in research and clinical practice in anorexia nervosa (AN), though it is not empirically established in this population. This study aims to examine the factorial validity of the TAS-20 in a Portuguese AN sample (N = 125), testing four different models (ranging from 1 to 4 factors) that were identified in critical examination of existing factor analytic studies. Results of confirmatory factor analysis (CFA) suggested that the three-factor solution, measuring difficulty identifying (DIF) and describing feelings (DDF), and externally oriented thinking (EOT), was the best fitting model. The quality of measurement improves if two EOT items (16 and 18) are eliminated. Internal consistency of EOT was low and decreased with age. The results provide support for the factorial validity of the TAS-20 in AN. Nevertheless, the measurement of EOT requires some caution and may be problematic in AN adolescents.

Formation of Lamellar Structured Oxide Dispersion Strengthening Layers in Zircaloy-4

Energy Technology Data Exchange (ETDEWEB)

Jung, Yang-Il; Park, Jung-Hwan; Park, Dong-Jun; Kim, Hyun-Gil; Yang, Jae-Ho; Koo, Yang-Hyun [Korea Atomic Energy Research Institute, Daejeon (Korea, Republic of); Lim, Yoon-Soo [Hanbat National University, Daejeon (Korea, Republic of)

2016-10-15

Korea Atomic Energy Research Institute (KAERI) is one of the leading organizations for developing ATF claddings. One concept is to form an oxidation-resistant layer on Zr cladding surface. The other is to increase high-temperature mechanical strength of Zr tube. The oxide dispersion strengthened (ODS) zirconium was proposed to increase the strength of the Zr-based alloy up to high temperatures. According to our previous investigations, the tensile strength of Zircaloy-4 was increased by up to 20% with the formation of a thin dispersed oxide layer with a thickness less than 10% of that of the Zircaloy-4 substrate. However, the tensile elongation of the samples decreased drastically. The brittle fracture was a major concern in development of the ODS Zircaloy-4. In this study, a lamellar structure of ODS layer was formed to increase ductility of the ODS Zircaloy-4. The mechanical properties were varied depending on the structure of ODS layer. For example, the partial formation of ODS layer with the thickness of 10% to the substrate thickness induced the increase in tensile strength up to about 20% than fresh Zircaloy-4.

Surface Plasmon Resonance (SPR Phenomenon of the Oxidizing and Reducing Polypyrrole

Directory of Open Access Journals (Sweden)

Nurlaila Rajabiah

2016-12-01

Full Text Available Surface Plasmon Resonance (SPR phenomenon of the oxidizing and reducing polypyrrole (PPy have been observed using a modified Au/PPy Kretschmann configuration. The observation was carried out through simulation Winspall 3.02 software and compared with some experimental data refractive index (n, absorbance index (, and thickness (τ reported in other literatures with spectroscopy ellipsometry. This simulation assumed that the SPR system use BK-7 halfcylinder prism (n= 1,515 and the laser beam was generated by HeNe (λ= 632,8 nm. The result showed that the optimum layer thickness of polypyrrole with neutral electrolyte solution in the reduction state is of about 20 nm. The polypyrrole with an acid solution in the oxidation state showed that the reflectivity curve is sharper and the width of the curve is smaller than the neutral electrolyte solution in the reduction state with the SPR angle of about 46,810 and the reflectivity value of about 0,217. Polypyrrole in a state of oxidation and reduction, related to the absorption, film thickness, and dielectric constant of materials, affected to the SPR angle shift and dip curve

Static and dynamic through thickness lamina properties of thick laminates

NARCIS (Netherlands)

Lahuerta, F.; Nijssen, R.P.L.; Van der Meer, F.P.; Sluys, L.J.

2015-01-01

Thick laminates are increasingly present in large composites structures such as wind turbine blades. Different factors are suspected to be involved in the decreased static and dynamic performance of thick laminates. These include the effect of self-heating, the scaling effect, and the manufacturing

Photoluminescence blue shift of indium phosphide nanowire networks with aluminum oxide coating

International Nuclear Information System (INIS)

Fryauf, David M.; Zhang, Junce; Norris, Kate J.; Diaz Leon, Juan J.; Oye, Michael M.; Kobayashi, Nobuhiko P.; Wei, Min

2014-01-01

This paper describes our finding that optical properties of semiconductor nanowires were modified by depositing a thin layer of metal oxide. Indium phosphide nanowires were grown by metal organic chemical vapor deposition on silicon substrates with gold catalyst resulting in three-dimensional nanowire networks, and optical properties were obtained from the collective nanowire networks. The networks were coated with an aluminum oxide thin film deposited by plasma-enhanced atomic layer deposition. We studied the dependence of the peak wavelength of photoluminescence spectra on the thickness of the oxide coatings. A continuous blue shift in photoluminescence spectra was observed when the thickness of the oxide coating was increased. The observed blue shift is attributed to the Burstein-Moss effect due to increased carrier concentration in the nanowire cores caused by repulsion from intrinsic negative fixed charges located at the inner oxide surface. Samples were further characterized by scanning electron microscopy, Raman spectroscopy, transmission electron microscopy, and selective area diffractometry to better understand the physical mechanisms for the blue shift. (copyright 2014 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Photoluminescence blue shift of indium phosphide nanowire networks with aluminum oxide coating

Energy Technology Data Exchange (ETDEWEB)

Fryauf, David M.; Zhang, Junce; Norris, Kate J.; Diaz Leon, Juan J.; Oye, Michael M.; Kobayashi, Nobuhiko P. [Nanostructured Energy Conversion Technology and Research (NECTAR), Advanced Studies Laboratories, University of California, Santa Cruz, CA (United States); Baskin School of Engineering, University of California Santa Cruz, Santa Cruz, CA (United States); NASA Ames Research Center, Moffett Field, CA (United States); Wei, Min [Baskin School of Engineering, University of California Santa Cruz, Santa Cruz, CA (United States); School of Micro-Electronics and Solid-Electronics, University of Electronic Science and Technology of China, Chengdu (China)

2014-07-15

This paper describes our finding that optical properties of semiconductor nanowires were modified by depositing a thin layer of metal oxide. Indium phosphide nanowires were grown by metal organic chemical vapor deposition on silicon substrates with gold catalyst resulting in three-dimensional nanowire networks, and optical properties were obtained from the collective nanowire networks. The networks were coated with an aluminum oxide thin film deposited by plasma-enhanced atomic layer deposition. We studied the dependence of the peak wavelength of photoluminescence spectra on the thickness of the oxide coatings. A continuous blue shift in photoluminescence spectra was observed when the thickness of the oxide coating was increased. The observed blue shift is attributed to the Burstein-Moss effect due to increased carrier concentration in the nanowire cores caused by repulsion from intrinsic negative fixed charges located at the inner oxide surface. Samples were further characterized by scanning electron microscopy, Raman spectroscopy, transmission electron microscopy, and selective area diffractometry to better understand the physical mechanisms for the blue shift. (copyright 2014 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Effect of Ni Doping on Gas Sensing Performance of ZnO Thick Film Resistor

Directory of Open Access Journals (Sweden)

M. K. DEORE

2010-11-01

Full Text Available This work investigates the use of ZnO-NiO as a H2S metal oxide thick film gas sensor. To find the optimum ratio of NiO to ZnO, two compositions were prepared using different molecular percentages and prepared as a thick film paste. These pastes were then screen-printed onto glass substrates with suitable binder. The final composition of each film was determined using SEM analysis. The films were used to detect CO, CL2, ethanol, Amonia and H2S. For each composition tested, the highest responses where displayed for H2S gas. The Thick film having composition of equal molar ZnO and NiO shows the highest response at operating temp. 350 0C for 100 ppm level. The gas response, selectivity, response and recovery time of the sensor were measured and presented. The role played by NiO species is to improve the gas sensing performance is discussed.

Educational Online Technologies in Blended Tertiary Environments: A Review of Literature

Science.gov (United States)

Tuapawa, Kimberley N.

2013-01-01

This is a review of the literature surrounding five popular media-rich educational online technologies (EOTs) currently being used by educationalists to support blended learning within tertiary environments. This review considers the following EOTs: 1) connective media, 2) interactive gaming, 3) virtual worlds, 4) web conferencing and 5) learning…

Catalytic oxidation of silicon by cesium ion bombardment

International Nuclear Information System (INIS)

Souzis, A.E.; Huang, H.; Carr, W.E.; Seidl, M.

1991-01-01

Results for room-temperature oxidation of silicon using cesium ion bombardment and low oxygen exposure are presented. Bombardment with cesium ions is shown to allow oxidation at O 2 pressures orders of magnitude smaller than with noble gas ion bombardment. Oxide layers of up to 30 A in thickness are grown with beam energies ranging from 20--2000 eV, O 2 pressures from 10 -9 to 10 -6 Torr, and total O 2 exposures of 10 0 to 10 4 L. Results are shown to be consistent with models indicating that initial oxidation of silicon is via dissociative chemisorption of O 2 , and that the low work function of the cesium- and oxygen-coated silicon plays the primary role in promoting the oxidation process

Photoinduced Cross-Linking of Dynamic Poly(disulfide) Films via Thiol Oxidative Coupling.

Science.gov (United States)

Feillée, Noémi; Chemtob, Abraham; Ley, Christian; Croutxé-Barghorn, Céline; Allonas, Xavier; Ponche, Arnaud; Le Nouen, Didier; Majjad, Hicham; Jacomine, Léandro

2016-01-01

Initially developed as an elastomer with an excellent record of barrier and chemical resistance properties, poly(disulfide) has experienced a revival linked to the dynamic nature of the S-S covalent bond. A novel photobase-catalyzed oxidative polymerization of multifunctional thiols to poly(disulfide) network is reported. Based solely on air oxidation, the single-step process is triggered by the photodecarboxylation of a xanthone acetic acid liberating a strong bicyclic guanidine base. Starting with a 1 μm thick film based on trithiol poly(ethylene oxide) oligomer, the UV-mediated oxidation of thiols to disulfides occurs in a matter of minutes both selectively, i.e., without overoxidation, and quantitatively as assessed by a range of spectroscopic techniques. Thiolate formation and film thickness determine the reaction rates and yield. Spatial control of the photopolymerization serves to generate robust micropatterns, while the reductive cleavage of S-S bridges allows the recycling of 40% of the initial thiol groups. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Evolution of insoluble eutectic Si particles in anodic oxidation films during adipic-sulfuric acid anodizing processes of ZL114A aluminum alloys

Science.gov (United States)

Hua, Lei; Liu, Jian-hua; Li, Song-mei; Yu, Mei; Wang, Lei; Cui, Yong-xin

2015-03-01

The effects of insoluble eutectic Si particles on the growth of anodic oxide films on ZL114A aluminum alloy substrates were investigated by optical microscopy (OM) and scanning electron microscopy (SEM). The anodic oxidation was performed at 25°C and a constant voltage of 15 V in a solution containing 50 g/L sulfuric acid and 10 g/L adipic acid. The thickness of the formed anodic oxidation film was approximately 7.13 μm. The interpore distance and the diameters of the major pores in the porous layer of the film were within the approximate ranges of 10-20 nm and 5-10 nm, respectively. Insoluble eutectic Si particles strongly influenced the morphology of the anodic oxidation films. The anodic oxidation films exhibited minimal defects and a uniform thickness on the ZL114A substrates; in contrast, when the front of the oxide oxidation films encountered eutectic Si particles, defects such as pits and non-uniform thickness were observed, and pits were observed in the films.

Effects of adding a weekly eccentric-overload training session on strength and athletic performance in team-handball players.

Science.gov (United States)

Sabido, Rafael; Hernández-Davó, Jose Luis; Botella, Javier; Navarro, Angel; Tous-Fajardo, Julio

2017-06-01

To investigate the influence of adding a weekly eccentric-overload training (EOT) session in several athletic performance's tests, 18 team-handball players were assigned either to an EOT (n = 11) or a Control (n = 7) group. Both groups continued to perform the same habitual strength training, but the EOT group added one session/week during a 7-week training programme consisting of four sets of eight repetitions for the bilateral half-squat and unilateral lunge exercises. The test battery included handball throwing velocity, maximum dynamic strength (1RM), countermovement jump (CMJ), 20 m sprint, triple hop for distance, and eccentric/concentric power in both the half-squat and lunge exercises. Data were analysed using magnitude-based inferences. Both groups improved their 1RM in the half squat, 20 m sprint time, and CMJ performance to a similar extent, but the EOT group showed a beneficial effect for both right [(42/58/0), possibly positive] and left [(99/1/0), very likely positive] triple hop for distance performance. In addition, the EOT group showed greater power output improvements in both eccentric and concentric phases of the half-squat (difference in percent of change ranging from 6.5% to 22.0%) and lunge exercises (difference in per cent of change ranging from 13.1% to 24.9%). Nevertheless, no group showed changes in handball throwing velocity. Selected variables related to team-handball performance (i.e. functional jumping performance, power output) can be improved by adding a single EOT session per week, highlighting the usefulness of this low-volume/high-intensity training when aiming at optimizing dynamic athletic performance.

Modelling how reversal of immune exhaustion elicits cure of chronic hepatitis C after the end of treatment with direct-acting antiviral agents.

Science.gov (United States)

Baral, Subhasish; Roy, Rahul; Dixit, Narendra M

2018-05-09

A fraction of chronic hepatitis C patients treated with direct-acting antivirals (DAAs) achieved sustained virological responses (SVR), or cure, despite having detectable viremia at the end of treatment (EOT). This observation, termed EOT + /SVR, remains puzzling and precludes rational optimization of treatment durations. One hypothesis to explain EOT + /SVR, the immunologic hypothesis, argues that the viral decline induced by DAAs during treatment reverses the exhaustion of cytotoxic T lymphocytes (CTLs), which then clear the infection after treatment. Whether the hypothesis is consistent with data of viral load changes in patients who experienced EOT + /SVR is unknown. Here, we constructed a mathematical model of viral kinetics incorporating the immunologic hypothesis and compared its predictions with patient data. We found the predictions to be in quantitative agreement with patient data. Using the model, we unraveled an underlying bistability that gives rise to EOT + /SVR and presents a new avenue to optimize treatment durations. Infected cells trigger both activation and exhaustion of CTLs. CTLs in turn kill infected cells. Due to these competing interactions, two stable steady states, chronic infection and viral clearance, emerge, separated by an unstable steady state with intermediate viremia. When treatment during chronic infection drives viremia sufficiently below the unstable state, spontaneous viral clearance results post-treatment, marking EOT + /SVR. The duration to achieve this desired reduction in viremia defines the minimum treatment duration required for ensuring SVR, which our model can quantify. Estimating parameters defining the CTL response of individuals to HCV infection would enable the application of our model to personalize treatment durations. This article is protected by copyright. All rights reserved. This article is protected by copyright. All rights reserved.

Effect of shell thickness on the exchange bias blocking temperature and coercivity in Co-CoO core-shell nanoparticles

Science.gov (United States)

Thomas, S.; Reethu, K.; Thanveer, T.; Myint, M. T. Z.; Al-Harthi, S. H.

2017-08-01

The exchange bias blocking temperature distribution of naturally oxidized Co-CoO core-shell nanoparticles exhibits two distinct signatures. These are associated with the existence of two magnetic entities which are responsible for the temperature dependence of an exchange bias field. One is from the CoO grains which undergo thermally activated magnetization reversal. The other is from the disordered spins at the Co-CoO interface which exhibits spin-glass-like behavior. We investigated the oxide shell thickness dependence of the exchange bias effect. For particles with a 3 nm thick CoO shell, the predominant contribution to the temperature dependence of exchange bias is the interfacial spin-glass layer. On increasing the shell thickness to 4 nm, the contribution from the spin-glass layer decreases, while upholding the antiferromagnetic grain contribution. For samples with a 4 nm CoO shell, the exchange bias training was minimal. On the other hand, 3 nm samples exhibited both the training effect and a peak in coercivity at an intermediate set temperature Ta. This is explained using a magnetic core-shell model including disordered spins at the interface.

Does the conductivity of interconnect coatings matter for solid oxide fuel cell applications?

Science.gov (United States)

Goebel, Claudia; Fefekos, Alexander G.; Svensson, Jan-Erik; Froitzheim, Jan

2018-04-01

The present work aims to quantify the influence of typical interconnect coatings used for solid oxide fuel cells (SOFC) on area specific resistance (ASR). To quantify the effect of the coating, the dependency of coating thickness on the ASR is examined on Crofer 22 APU at 600 °C. Three different Co coating thicknesses are investigated, 600 nm, 1500 nm, and 3000 nm. Except for the reference samples, the material is pre-oxidized prior to coating to mitigate the outward diffusion of iron and consequent formation of poorly conducting (Co,Fe)3O4 spinel. Exposures are carried out at 600 °C in stagnant laboratory air for 500 h and subsequent ASR measurements are performed. Additionally the microstructure is investigated with scanning electron microscopy (SEM). On all pre-oxidized samples, a homogenous dense Co3O4 top layer is observed beneath which a thin layer of Cr2O3 is present. As the ASR values range between 7 and 12 mΩcm2 for all pre-oxidized samples, even though different Co3O4 thicknesses are observed, the results strongly suggest that for most applicable cases the impact of the coating on ASR is negligible and the main contributor is Cr2O3.

Signatures of Quantized Energy States in Solution-Processed Ultrathin Layers of Metal-Oxide Semiconductors and Their Devices

KAUST Repository

Labram, John G.

2015-02-13

Physical phenomena such as energy quantization have to-date been overlooked in solution-processed inorganic semiconducting layers, owing to heterogeneity in layer thickness uniformity unlike some of their vacuum-deposited counterparts. Recent reports of the growth of uniform, ultrathin (<5 nm) metal-oxide semiconductors from solution, however, have potentially opened the door to such phenomena manifesting themselves. Here, a theoretical framework is developed for energy quantization in inorganic semiconductor layers with appreciable surface roughness, as compared to the mean layer thickness, and present experimental evidence of the existence of quantized energy states in spin-cast layers of zinc oxide (ZnO). As-grown ZnO layers are found to be remarkably continuous and uniform with controllable thicknesses in the range 2-24 nm and exhibit a characteristic widening of the energy bandgap with reducing thickness in agreement with theoretical predictions. Using sequentially spin-cast layers of ZnO as the bulk semiconductor and quantum well materials, and gallium oxide or organic self-assembled monolayers as the barrier materials, two terminal electronic devices are demonstrated, the current-voltage characteristics of which resemble closely those of double-barrier resonant-tunneling diodes. As-fabricated all-oxide/hybrid devices exhibit a characteristic negative-differential conductance region with peak-to-valley ratios in the range 2-7.

Through thickness property variations in a thick plate AA7050 friction stir welded joint

International Nuclear Information System (INIS)

Canaday, Clinton T.; Moore, Matthew A.; Tang, Wei; Reynolds, A.P.

2013-01-01

In this study, moderately thick (32 mm) AA7050 plates were joined by friction stir welding (FSW). Various methods were used to characterize the welded joints, including nugget grain size measurements at different locations through the thickness, micro-hardness indentation through nugget, thermo-mechanically affected zone (TMAZ), and heat affected zone (HAZ) at different cross section heights, and residual stress measurement using the cut compliance method with full thickness and partial thickness specimens. All testing results are consistent with the presence of a strong gradient in peak temperature through the plate thickness during FSW.

Deuterium permeation behavior of HTUPS4 steel with thermal oxidation layer

International Nuclear Information System (INIS)

Xu, Yu-Ping; Liu, Feng; Zhao, Si-Xiang; Li, Xiao-Chun; Wang, Jing; An, Zhong-Qing; Lu, Tao; Liu, Hao-Dong; Ding, Fang; Zhou, Hai-Shan; Luo, Guang-Nan

2016-01-01

The permeation behavior of creep-resistant, Al 2 O 3 -forming HTUPS austenitic stainless steels was studied using a gas driven permeation (GDP) device. The steel samples were first thermal oxidized at air condition, followed by GDP experiments. The permeability and diffusion coefficients of oxidized samples and bare 316L steels were derived and compared. In order to characterize the oxide layer, X-ray photoelectron spectroscopy was performed. An oxide layer with a thickness of 200 nm which mainly consists of Al 2 O 3 was detected.

The influence of thickness on memory characteristic based on nonvolatile tuning behavior in poly(N-vinylcarbazole) films

International Nuclear Information System (INIS)

Sun, Yanmei; Ai, Chunpeng; Lu, Junguo; Li, Lei; Wen, Dianzhong; Bai, Xuduo

2016-01-01

The memory characteristic based on nonvolatile tuning behavior in indium tin oxide/poly(N-vinylcarbazole)/aluminum (ITO/PVK/Al) was investigated, the different memory behaviors were first observed in PVK film as the film thickness changing. By control of PVK film thickness with different spinning speeds, the nonvolatile behavior of ITO/PVK/Al sandwich structure can be tuned in a controlled manner. Obviously different nonvolatile behaviors, such as (i) flash memory behavior and (ii) write-once-read-many times (WORM) memory behavior are from the current–voltage (I–V) characteristics of the PVK films. The results suggest that the film thickness plays a key part in determining the memory type of the PVK. - Highlights: • The different memory behaviors were observed in PVK film. • The nonvolatile behavior of ITO/PVK/Al sandwich structure can be tuned. • The film thickness plays a key part in determining the memory type of the PVK.

Mn-implanted, polycrystalline indium tin oxide and indium oxide films

International Nuclear Information System (INIS)

Scarlat, Camelia; Vinnichenko, Mykola; Xu Qingyu; Buerger, Danilo; Zhou Shengqiang; Kolitsch, Andreas; Grenzer, Joerg; Helm, Manfred; Schmidt, Heidemarie

2009-01-01

Polycrystalline conducting, ca. 250 nm thick indium tin oxide (ITO) and indium oxide (IO) films grown on SiO 2 /Si substrates using reactive magnetron sputtering, have been implanted with 1 and 5 at.% of Mn, followed by annealing in nitrogen or in vacuum. The effect of the post-growth treatment on the structural, electrical, magnetic, and optical properties has been studied. The roughness of implanted films ranges between 3 and 15 nm and XRD measurements revealed a polycrystalline structure. A positive MR has been observed for Mn-implanted and post-annealed ITO and IO films. It has been interpreted by considering s-d exchange. Spectroscopic ellipsometry has been used to prove the existence of midgap electronic states in the Mn-implanted ITO and IO films reducing the transmittance below 80%.

Experimental investigation on oxidation kinetics of germanium by ozone

Energy Technology Data Exchange (ETDEWEB)

Wang, Xiaolei, E-mail: wangxiaolei@ime.ac.cn [Key Laboratory of Microelectronics Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029 (China); Zhao, Zhiqian; Xiang, Jinjuan [Key Laboratory of Microelectronics Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029 (China); Wang, Wenwu, E-mail: wangwenwu@ime.ac.cn [Key Laboratory of Microelectronics Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029 (China); Zhang, Jing, E-mail: zhangj@ncut.edu.cn [Key Laboratory of Microelectronics Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029 (China); Microelectronics Department, North China University of Technology, Beijing 100041 (China); Zhao, Chao; Ye, Tianchun [Key Laboratory of Microelectronics Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029 (China)

2016-12-30

Highlights: • Kinetics mechanism of Ge surface oxidation by ozone at low temperature is experimentally investigated. • The growth process contains initially linear growth region and following parabolic growth region. • The GeO{sub x} thickness vs. oxidation time plot obeys the well-known Deal-Grove or linear parabolic model. • The linear growth region includes the oxidation of two topmost Ge layers, and the oxidation of third layer and following layers of Ge is diffusion limited. • The activation energies for linear and parabolic regions are 0.04 and 0.55 eV, respectively. - Abstract: Oxidation kinetics of germanium surface by ozone at low temperature (≤400 °C) is experimentally investigated. The growth process contains two regions: initial linear growth region and following parabolic growth region. The GeO{sub x} thickness vs. oxidation time plot obeys the well-known Deal-Grove or linear parabolic model. The linear growth region contains reaction of oxygen atoms with surface bond and back bonds of outmost Ge layer. And the activation energy is experimentally estimated to be 0.06 eV. Such small activation energy indicates that the linear growth region is nearly barrier-less. The parabolic growth region starts when the oxygen atoms diffuse into back bonds of second outmost Ge layers. And the activation energy for this process is found to be 0.54 eV. Furthermore, in the ozone oxidation it is not O{sub 3} molecules but O radicals that go through the GeO{sub x} film.

Non-contact radiation thickness gauge

International Nuclear Information System (INIS)

Tsujii, T.; Okino, T.

1983-01-01

A noncontact thickness gauge system for measuring the thickness of a material comprising a source of radiation, a detector for detecting the amount of radiation transmitted through the material which is a function of the absorptance and thickness of the material, a memory for storing the output signals of the detector and curve-defining parameters for a plurality of quadratic calibration curves which correspond to respective thickness ranges, and a processor for processing the signals and curve defining parameters to determine the thickness of the material. Measurements are made after precalibration to obtain calibration curves and these are stored in the memory, providing signals representative of a nominal thickness and an alloy compensation coefficient for the material. The calibration curve corresponding to a particular thickness range is selected and the curve compensated for drift; the material is inserted into the radiation path and the detector output signal processed with the compensated calibration curve to determine the thickness of the material. (author)

Enhanced photocurrent density in graphene/Si based solar cell (GSSC) by optimizing active layer thickness

International Nuclear Information System (INIS)

Rosikhin, Ahmad; Hidayat, Aulia Fikri; Syuhada, Ibnu; Winata, Toto

2015-01-01

Thickness dependent photocurrent density in active layer of graphene/Si based solar cell has been investigated via analytical – simulation study. This report is a preliminary comparison of experimental and analytical investigation of graphene/Si based solar cell. Graphene sheet was interfaced with Si thin film forming heterojunction solar cell that was treated as a device model for photocurrent generator. Such current can be enhanced by optimizing active layer thickness and involving metal oxide as supporting layer to shift photons absorption. In this case there are two type of devices model with and without TiO 2 in which the silicon thickness varied at 20 – 100 nm. All of them have examined and also compared with each other to obtain an optimum value. From this calculation it found that generated currents almost linear with thickness but there are saturated conditions that no more enhancements will be achieved. Furthermore TiO 2 layer is effectively increases photon absorption but reducing device stability, maximum current is fluctuates enough. This may caused by the disturbance of excitons diffusion and resistivity inside each layer. Finally by controlling active layer thickness, it is quite useful to estimate optimization in order to develop the next solar cell devices

Enhanced photocurrent density in graphene/Si based solar cell (GSSC) by optimizing active layer thickness

Energy Technology Data Exchange (ETDEWEB)

Rosikhin, Ahmad, E-mail: a.rosikhin86@yahoo.co.id; Hidayat, Aulia Fikri; Syuhada, Ibnu; Winata, Toto, E-mail: toto@fi.itb.ac.id [Department of physics, physics of electronic materials research division Faculty of Mathematics and Natural Sciences, Institut Teknologi Bandung Jl. Ganesha 10, Bandung 40132, Jawa Barat – Indonesia (Indonesia)

2015-12-29

Thickness dependent photocurrent density in active layer of graphene/Si based solar cell has been investigated via analytical – simulation study. This report is a preliminary comparison of experimental and analytical investigation of graphene/Si based solar cell. Graphene sheet was interfaced with Si thin film forming heterojunction solar cell that was treated as a device model for photocurrent generator. Such current can be enhanced by optimizing active layer thickness and involving metal oxide as supporting layer to shift photons absorption. In this case there are two type of devices model with and without TiO{sub 2} in which the silicon thickness varied at 20 – 100 nm. All of them have examined and also compared with each other to obtain an optimum value. From this calculation it found that generated currents almost linear with thickness but there are saturated conditions that no more enhancements will be achieved. Furthermore TiO{sub 2} layer is effectively increases photon absorption but reducing device stability, maximum current is fluctuates enough. This may caused by the disturbance of excitons diffusion and resistivity inside each layer. Finally by controlling active layer thickness, it is quite useful to estimate optimization in order to develop the next solar cell devices.

Screen-printed calcium-birnessite electrodes for water oxidation at neutral pH and an "electrochemical harriman series".

Science.gov (United States)

Lee, Seung Y; González-Flores, Diego; Ohms, Jonas; Trost, Tim; Dau, Holger; Zaharieva, Ivelina; Kurz, Philipp

2014-12-01

A mild screen-printing method was developed to coat conductive oxide surfaces (here: fluorine-doped tin oxide) with micrometer-thick layers of presynthesized calcium manganese oxide (Ca-birnessite) particles. After optimization steps concerning the printing process and layer thickness, electrodes were obtained that could be used as corrosion-stable water-oxidizing anodes at pH 7 to yield current densities of 1 mA cm(-2) at an overpotential of less than 500 mV. Analyses of the electrode coatings of optimal thickness (≈10 μm) indicated that composition, oxide phase, and morphology of the synthetic Ca-birnessite particles were hardly affected by the screen-printing procedure. However, a more detailed analysis by X-ray absorption spectroscopy revealed small modifications of both the Mn redox state and the structure at the atomic level, which could affect functional properties such as proton conductivity. Furthermore, the versatile new screen-printing method was used for a comparative study of various transition-metal oxides concerning electrochemical water oxidation under "artificial leaf conditions" (neutral pH, fairly low overpotential and current density), for which a general activity ranking of RuO2 >Co3 O4 ≈(Ca)MnOx ≈NiO was observed. Within the group of screened manganese oxides, Ca-birnessite performed better than "Mn-only materials" such as Mn2 O3 and MnO2 . © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Formation of nano iridium oxide: material properties and neural cell culture

International Nuclear Information System (INIS)

Lee, In-Seop; Whang, Chung-Nam; Lee, Young-Hee; Hwan Lee, Gun; Park, Bong-Joo; Park, Jong-Chul; Seo, Won-Seon; Cui Fuzhai

2005-01-01

Iridium film with the thickness of 30 and 60 nm were formed on both Si wafer and commercially pure (CP) Ti by electron beam evaporation. The thin iridium film showed the identical charge injection capability with the bulk Ir. However, the charge injection value of iridium film was decreased with continuous potential cycling when the deposited iridium became depleted due to the formation of oxide. The number of cycles at which the charge injection value decreased was 800 and 1600 cycles for the 30- and 60-nm-thick Ir film, respectively. FE-SEM observations on the cross section of Ir film clearly showed the thicker iridium oxide was formed with the more potential cycling. Ar ion beam etching to substrates before deposition certainly improved the adhesion strength of Ir film enough to resist to the strain induced by the larger volume occupation of iridium oxide. Swiss 3T3 fibroblasts culture on Ir and Ir oxide showed no cytotoxicity. Also, embryonic cortical neural cell culture on electrode indicated neurons adhered and survived by the formation of neurofilament

Synthesis of bimetallic Pt-Pd core-shell nanocrystals and their high electrocatalytic activity modulated by Pd shell thickness

Science.gov (United States)

Li, Yujing; Wang, Zhi Wei; Chiu, Chin-Yi; Ruan, Lingyan; Yang, Wenbing; Yang, Yang; Palmer, Richard E.; Huang, Yu

2012-01-01

Bimetallic Pt-Pd core-shell nanocrystals (NCs) are synthesized through a two-step process with controlled Pd thickness from sub-monolayer to multiple atomic layers. The oxygen reduction reaction (ORR) catalytic activity and methanol oxidation reactivity of the core-shell NCs for fuel cell applications in alkaline solution are systematically studied and compared based on different Pd thickness. It is found that the Pd shell helps to reduce the over-potential of ORR by up to 50mV when compared to commercial Pd black, while generating up to 3-fold higher kinetic current density. The carbon monoxide poisoning test shows that the bimetallic NCs are more resistant to the CO poisoning than Pt NCs and Pt black. It is also demonstrated that the bimetallic Pt-Pd core-shell NCs can enhance the current density of the methanol oxidation reaction, lowering the over-potential by 35 mV with respect to the Pt core NCs. Further investigation reveals that the Pd/Pt ratio of 1/3, which corresponds to nearly monolayer Pd deposition on Pt core NCs, gives the highest oxidation current density and lowest over-potential. This study shows for the first time the systematic investigation of effects of Pd atomic shells on Pt-Pd bimetallic nanocatalysts, providing valuable guidelines for designing high-performance catalysts for fuel cell applications.Bimetallic Pt-Pd core-shell nanocrystals (NCs) are synthesized through a two-step process with controlled Pd thickness from sub-monolayer to multiple atomic layers. The oxygen reduction reaction (ORR) catalytic activity and methanol oxidation reactivity of the core-shell NCs for fuel cell applications in alkaline solution are systematically studied and compared based on different Pd thickness. It is found that the Pd shell helps to reduce the over-potential of ORR by up to 50mV when compared to commercial Pd black, while generating up to 3-fold higher kinetic current density. The carbon monoxide poisoning test shows that the bimetallic NCs are more

Thickness filters for gradient based multi-material and thickness optimization of laminated composite structures

DEFF Research Database (Denmark)

Sørensen, Rene; Lund, Erik

2015-01-01

This paper presents a new gradient based method for performing discrete material and thickness optimization of laminated composite structures. The novelty in the new method lies in the application of so-called casting constraints, or thickness filters in this context, to control the thickness...... variation throughout the laminate. The filters replace the layerwise density variables with a single continuous through-the-thickness design variable. Consequently, the filters eliminate the need for having explicit constraints for preventing intermediate void through the thickness of the laminate....... Therefore, the filters reduce both the number of constraints and design variables in the optimization problem. Based upon a continuous approximation of a unit step function, the thickness filters are capable of projecting discrete 0/1 values to the underlying layerwise or ”physical” density variables which...

Oxidation of zirconium-aluminum alloys

International Nuclear Information System (INIS)

Cox, B.

1967-10-01

Examination of the processes occurring during the oxidation of Zr-1% A1, Zr-3% A1, and Zr-1.5% A1-0.5% Mo alloys has shown that in steam rapid oxidation occurs predominantly around the Zr 3 A1 particles, which at low temperatures appear to be relatively unattacked. The unoxidised particles become incorporated in the oxide, and become fully oxidised as the film thickens. This rapid localised oxidation is preceded by a short period of uniform film growth, during which the oxide film thickness does not exceed ∼200A-o. Thus the high oxidation rates can probably be ascribed to aluminum in solution in the zirconium matrix, although its precise mode of operation has not been determined. Once the solubility limit of aluminum is exceeded, the size, distribution and number of intermetallic particles affects the oxidation rate merely by altering the distribution of regions of metal giving high oxidation rates. The controlling process during the early stages of oxidation is electron transport and not ionic transport. Thus, the aluminum in the oxide film is presumably increasing the ionic conductivity more than the electronic. The oxidation rates in atmospheric pressure steam are very high and their irregular temperature dependence suggests that the oxidation rate will be pressure dependent. This was confirmed, in part, by a comparison with oxidation in moist air. It was found that the rate of development of white oxide around intermetallic particles was considerably reduced by the decrease in the partial pressure of H 2 O; the incubation period was not much different, however. (author)

TRPV4 activation mediates flow-induced nitric oxide production in the rat thick ascending limb

Science.gov (United States)

Garvin, Jeffrey L.

2014-01-01

Nitric oxide (NO) regulates renal function. Luminal flow stimulates NO production in the thick ascending limb (TAL). Transient receptor potential vanilloid 4 (TRPV4) is a mechano-sensitive channel activated by luminal flow in different types of cells. We hypothesized that TRPV4 mediates flow-induced NO production in the rat TAL. We measured NO production in isolated, perfused rat TALs using the fluorescent dye DAF FM. Increasing luminal flow from 0 to 20 nl/min stimulated NO from 8 ± 3 to 45 ± 12 arbitrary units (AU)/min (n = 5; P < 0.05). The TRPV4 antagonists, ruthenium red (15 μmol/l) and RN 1734 (10 μmol/l), blocked flow-induced NO production. Also, luminal flow did not increase NO production in the absence of extracellular calcium. We also studied the effect of luminal flow on NO production in TALs transduced with a TRPV4shRNA. In nontransduced TALs luminal flow increased NO production by 47 ± 17 AU/min (P < 0.05; n = 5). Similar to nontransduced TALs, luminal flow increased NO production by 39 ± 11 AU/min (P < 0.03; n = 5) in TALs transduced with a control negative sequence-shRNA while in TRPV4shRNA-transduced TALs, luminal flow did not increase NO production (Δ10 ± 15 AU/min; n = 5). We then tested the effect of two different TRPV4 agonists on NO production in the absence of luminal flow. 4α-Phorbol 12,13-didecanoate (1 μmol/l) enhanced NO production by 60 ± 11 AU/min (P < 0.002; n = 7) and GSK1016790A (10 ηmol/l) increased NO production by 52 ± 15 AU/min (P < 0.03; n = 5). GSK1016790A (10 ηmol/l) did not stimulate NO production in TRPV4shRNA-transduced TALs. We conclude that activation of TRPV4 channels mediates flow-induced NO production in the rat TAL. PMID:24966090

High-rate reduction of copper oxide using atmospheric-pressure inductively coupled plasma microjets

International Nuclear Information System (INIS)

Tajima, Satomi; Tsuchiya, Shouichi; Matsumori, Masashi; Nakatsuka, Shigeki; Ichiki, Takanori

2011-01-01

Reduction of copper oxide was performed using an atmospheric-pressure inductively coupled plasma (AP-ICP) microjet while varying the input power P between 15 and 50 W. Cuprous oxide (Cu 2 O) and cupric oxide (CuO) were formed on the sputtered Cu surface by thermal annealing. Dynamic behavior of the microplasma jet, optical emission from H atoms, the substrate temperature, chemical bonding states of the treated surface, and the thickness of the reduced Cu layer were measured to study the fundamental reduction process. Surface composition and the thickness of the reduced Cu layer changed significantly with P. Rapid reduction of CuO and Cu 2 O was achieved at a rate of 493 nm/min at P = 50 W since high-density H atoms were produced by the AP-ICP microjet.

High-rate reduction of copper oxide using atmospheric-pressure inductively coupled plasma microjets

Energy Technology Data Exchange (ETDEWEB)

Tajima, Satomi; Tsuchiya, Shouichi [Department of Bioengineering, Graduate School of Engineering, University of Tokyo, 2-11-16 Yayoi, Bunkyo-ku, 113-8656 (Japan); Matsumori, Masashi; Nakatsuka, Shigeki [Panasonic Factory Solutions Co., Ltd., 2-7 Matsuba-cho, Kadoma-city, Osaka, 571-8502 (Japan); Ichiki, Takanori, E-mail: ichiki@sogo.t.u-tokyo.ac.jp [Department of Bioengineering, Graduate School of Engineering, University of Tokyo, 2-11-16 Yayoi, Bunkyo-ku, 113-8656 (Japan); Institute of Engineering Innovation, Graduate School of Engineering, University of Tokyo, 2-11-16 Yayoi, Bunkyo-ku, Tokyo, 113-8656 (Japan)

2011-08-01

Reduction of copper oxide was performed using an atmospheric-pressure inductively coupled plasma (AP-ICP) microjet while varying the input power P between 15 and 50 W. Cuprous oxide (Cu{sub 2}O) and cupric oxide (CuO) were formed on the sputtered Cu surface by thermal annealing. Dynamic behavior of the microplasma jet, optical emission from H atoms, the substrate temperature, chemical bonding states of the treated surface, and the thickness of the reduced Cu layer were measured to study the fundamental reduction process. Surface composition and the thickness of the reduced Cu layer changed significantly with P. Rapid reduction of CuO and Cu{sub 2}O was achieved at a rate of 493 nm/min at P = 50 W since high-density H atoms were produced by the AP-ICP microjet.

High-density oxidized porous silicon

International Nuclear Information System (INIS)

Gharbi, Ahmed; Souifi, Abdelkader; Remaki, Boudjemaa; Halimaoui, Aomar; Bensahel, Daniel

2012-01-01

We have studied oxidized porous silicon (OPS) properties using Fourier transform infraRed (FTIR) spectroscopy and capacitance–voltage C–V measurements. We report the first experimental determination of the optimum porosity allowing the elaboration of high-density OPS insulators. This is an important contribution to the research of thick integrated electrical insulators on porous silicon based on an optimized process ensuring dielectric quality (complete oxidation) and mechanical and chemical reliability (no residual pores or silicon crystallites). Through the measurement of the refractive indexes of the porous silicon (PS) layer before and after oxidation, one can determine the structural composition of the OPS material in silicon, air and silica. We have experimentally demonstrated that a porosity approaching 56% of the as-prepared PS layer is required to ensure a complete oxidation of PS without residual silicon crystallites and with minimum porosity. The effective dielectric constant values of OPS materials determined from capacitance–voltage C–V measurements are discussed and compared to FTIR results predictions. (paper)

Comparison of 120- and 140-μm SMILE Cap Thickness Results in Eyes With Thick Corneas.

Science.gov (United States)

Liu, Manli; Zhou, Yugui; Wu, Xianghua; Ye, Tiantian; Liu, Quan

2016-10-01

To evaluate clinical outcomes after small incision lenticule extraction (SMILE) with different cap thicknesses in thick corneas. Forty patients with central corneal thickness of more than 560 μm were recruited in this prospective, randomized, masked, paired-eye study. Patients were randomized to receive SMILE with a 120-μm cap thickness in 1 eye and 140-μm cap thickness in the other. Uncorrected and corrected distance visual acuity (CDVA), contrast sensitivity (CS), higher-order aberrations (HOAs), and morphologic modifications of corneal architecture were measured during the 3-month follow-up period. Postoperative refractive outcomes, visual outcomes, CS, and the changes in HOAs were similar between both groups. The persistence of brightly reflective particles in the corneal interface layer was 1388.6 ± 219.5/mm in eyes with 120-μm cap thickness and 54.7 ± 8.6/mm in eyes with 140-μm cap thickness (P line at the interface layer almost disappeared in all eyes with 140-μm cap thickness, and it still persisted in 43% of the fellow eyes at 3 months postoperatively. The anterior surfaces of lenticules in the 140-μm cap thickness group exhibited more smoothness than in the 120-μm cap thickness group. There was a lower level corneal wound-healing response after SMILE with a 140-μm cap thickness than with a 120-μm cap thickness, although the thickness of cap creation did not affect visual outcomes by 3 months postoperatively.

Porous Aluminum Oxide and Magnesium Oxide Films Using Organic Hydrogels as Structure Matrices

Directory of Open Access Journals (Sweden)

Zimei Chen

2018-03-01

Full Text Available We describe the synthesis of mesoporous Al2O3 and MgO layers on silicon wafer substrates by using poly(dimethylacrylamide hydrogels as porogenic matrices. Hydrogel films are prepared by spreading the polymer through spin-coating, followed by photo-cross-linking and anchoring to the substrate surface. The metal oxides are obtained by swelling the hydrogels in the respective metal nitrate solutions and subsequent thermal conversion. Combustion of the hydrogel results in mesoporous metal oxide layers with thicknesses in the μm range and high specific surface areas up to 558 m2∙g−1. Materials are characterized by SEM, FIB ablation, EDX, and Kr physisorption porosimetry.

Characteristics of an integrated cathode assembly for the electrolytic reduction of uranium oxide in a LiCl-Li2O molten salt

International Nuclear Information System (INIS)

Sung Bin Park; Byung Heung Park; Sang Mun Jeong; Jin Mok Hur; Chung Seok Seo; Seong Won Park; Seung-Hoon Choi

2006-01-01

Electrochemical behavior of the reduction of uranium oxide was studied in a LiCl-Li 2 O molten salt system with an integrated cathode assembly. The mechanism for the electrolytic reduction of uranium oxide was studied through cyclic voltammetry. By means of a chronopotentiometry, the effects of the thickness of the uranium oxide, the thickness of the MgO membrane and the material of the conductor of an integrated cathode assembly on the overpotential of the cathode were investigated. From the voltamograms, the reduction potential of the uranium oxide and Li 2 O was obtained and the two mechanisms of the electrolytic reduction were considered with regard to the applied cathode potential. From the chronopotentiograms, the exchange current, the transfer coefficient and the maximum allowable current based on the Tafel behavior were obtained with regard to the thickness of the uranium oxide, and of the MgO membrane and the material of the conductor of an integrated cathode assembly. (author)

Plasma Post Oxidation of Plasma Nitrocarburized SKD 61 Steel

Institute of Scientific and Technical Information of China (English)

无

2008-01-01

Plasma nitrocarburizing and plasma oxidizing treatments were performed to improve the wear and corrosion resistance of SKD 61 steel. Plasma nitrocarburizing was conducted for 12 h at 540℃ in the nitrogen,hydrogen and methane atmosphere to produce the ε-Fe,2-3(N,C) phase. The compound layer produced by plasma nitrocarburising was predominantly composed of ε-phase, with a small proportion of γ′-Fe4(N,C) phase.The thickness of the compound layer and the diffusion layer are about 10 μm and about 200μm, respectively.Plasma post oxidation was performed on the nitrocarburized samples with various oxygen/hydrogen ratio at constant temperature of 500℃ for 1 h. The very thin magnetite (Fe3O4) layer of 1-2μm in thickness on top of the compound layer was obtained. Anodic polarization test revealed that plasma nitrocarburizing process contributed a significant improvement of corrosion resistance of SKD 61 steel. However, the corrosion characteristics of the nitrocarburized compound layer was deteriorated by oxidation treatment.

Effect of dew point on the formation of surface oxides of twinning-induced plasticity steel

International Nuclear Information System (INIS)

Kim, Yunkyum; Lee, Joonho; Shin, Kwang-Soo; Jeon, Sun-Ho; Chin, Kwang-Geun

2014-01-01

The surface oxides of twinning-induced plasticity (TWIP) steel annealed at 800 °C for 43 s were investigated using transmission electron microscopy. During the annealing process, the oxygen potential was controlled by adjusting the dew point in a 15%H 2 –N 2 gas atmosphere. It was found that the type of surface oxides formed and the thickness of the oxide layer were determined by the dew point. In a gas mixture with a dew point of − 20 °C, a MnO layer with a thickness of ∼ 100 nm was formed uniformly on the steel surface. Under the MnO layer, a MnAl 2 O 4 layer with a thickness of ∼ 15 nm was formed with small Mn 2 SiO 4 particles that measured ∼ 70 nm in diameter. Approximately 500 nm below the MnAl 2 O 4 layer, Al 2 O 3 was formed at the grain boundaries. On the other hand, in a gas mixture with a dew point of − 40 °C, a MnAl 2 O 4 layer with a thickness of ∼ 5 nm was formed on most parts of the surface. On some parts of the surface, Mn 2 SiO 4 particles were formed irregularly up to a thickness of ∼ 50 nm. Approximately 200 nm below the MnAl 2 O 4 layer, Al 2 O 3 was found at the grain boundaries. Thermodynamic calculations were performed to explain the experimental results. The calculations showed that when a O2 > ∼ 1.26 × 10 −28 , MnO, MnAl 2 O 4 , and Mn 2 SiO 4 can be formed together, and the major oxide is MnO. When a O2 is in the range of 1.26 × 10 −28 –2.51 × 10 −31 , MnO is not stable but MnAl 2 O 4 is the major oxide. When a O2 < ∼ 2.51 × 10 −31 , only Al 2 O 3 is stable. Consequently, the effective activity of oxygen is considered the dominant factor in determining the type and shape of surface oxides of TWIP steel. - Highlights: • The surface oxides of TWIP steel annealed at 800 °C were investigated using TEM. • The surface oxides were determined by the dew point during the annealing process. • The activity of oxygen is the major factor determining the oxides of TWIP steel

Effect of porous silicon layer on the performance of Si/oxide photovoltaic and photoelectrochemical cells

International Nuclear Information System (INIS)

Badawy, Waheed A.

2008-01-01

Photovoltaic and photoelectrochemical systems were prepared by the formation of a thin porous film on silicon. The porous silicon layer was formed on the top of a clean oxide free silicon wafer surface by anodic etching in HF/H 2 O/C 2 H 5 OH mixture (2:1:1). The silicon was then covered by an oxide film (tin oxide, ITO or titanium oxide). The oxide films were prepared by the spray/pyrolysis technique which enables doping of the oxide film by different atoms like In, Ru or Sb during the spray process. Doping of SnO 2 or TiO 2 films with Ru atoms improves the surface characteristics of the oxide film which improves the solar conversion efficiency. The prepared solar cells are stable against environmental attack due to the presence of the stable oxide film. It gives relatively high short circuit currents (I sc ), due to the presence of the porous silicon layer, which leads to the recorded high conversion efficiency. Although the open-circuit potential (V oc ) and fill factor (FF) were not affected by the thickness of the porous silicon film, the short circuit current was found to be sensitive to this thickness. An optimum thickness of the porous film and also the oxide layer is required to optimize the solar cell efficiency. The results represent a promising system for the application of porous silicon layers in solar energy converters. The use of porous silicon instead of silicon single crystals in solar cell fabrication and the optimization of the solar conversion efficiency will lead to the reduction of the cost as an important factor and also the increase of the solar cell efficiency making use of the large area of the porous structures

Resistivity and thickness effects in dendritic web silicon solar cells

Science.gov (United States)

Meier, D. L.; Hwang, J. M.; Greggi, J.; Campbell, R. B.

1987-01-01

The decrease of minority carrier lifetime as resistivity decreases in dendritic-web silicon solar cells is addressed. This variation is shown to be consistent with the presence of defect levels in the bandgap which arise from extended defects in the web material. The extended defects are oxide precipitates (SiOx) and the dislocation cores they decorate. Sensitivity to this background distribution of defect levels increases with doping because the Fermi level moves closer to the majority carrier band edge. For high-resistivity dendritic-web silicon, which has a low concentration of these extended defects, cell efficiencies as high as 16.6 percent (4 sq cm, 40 ohm-cm boron-doped base, AM1.5 global, 100 mW/sq cm, 25 C JPL LAPSS1 measurement) and a corresponding electron lifetime of 38 microsec have been obtained. Thickness effects occur in bifacial cell designs and in designs which use light trapping. In some cases, the dislocation/precipitate defect can be passivated through the full thickness of web cells by hydrogen ion implantation.

End-of-Treatment Positron Emission Tomography After Uniform First-Line Therapy of B-Cell Posttransplant Lymphoproliferative Disorder Identifies Patients at Low Risk of Relapse in the Prospective German PTLD Registry.

Science.gov (United States)

Zimmermann, Heiner; Denecke, Timm; Dreyling, Martin H; Franzius, Christiane; Reinke, Petra; Subklewe, Marion; Amthauer, Holger; Kneba, Michael; Riess, Hanno; Trappe, Ralf U

2018-05-01

Fluorine-18 fluorodeoxyglucose (18F-FDG)-positron emission tomography (PET) is a recommended standard in the staging and response assessment of 18F-FDG-avid lymphoma. Posttransplant lymphoproliferative disorder (PTLD) can be detected by 18F-FDG-PET at diagnosis with high sensitivity and specificity. However, the role of response assessment by end-of-treatment (EOT) PET has only been addressed in small case series. We performed a retrospective, multicenter study of 37 patients with CD20-positive PTLD after solid organ transplantation treated with uniform, up-to-date, first-line protocols in the prospective German PTLD registry who had received EOT 18F-FDG-PET between 2006 and 2014. Median follow-up was 5.0 years. Any nonphysiological 18F-FDG uptake (Deauville score greater 2) was interpreted as PET-positive. By computed tomography (CT) final staging, 18 of 37 patients had a complete response, 18 had a partial response and 1 patient had stable disease. EOT PET was negative in 24 of 37 patients and positive in 13 of 37 patients. The positive predictive value of EOT PET for PTLD relapse was 38%, and the negative predictive value was 92%. Time to progression (TTP) and progression-free-survival were significantly longer in the PET negative group (P = 0.019 and P = 0.013). In the 18 patients in a partial response by CT staging, we noted highly significant differences in overall survival (P = 0.001), time to progression (P = 0.007), and progression-free survival (P < 0.001) by EOT PET. Even without baseline imaging, EOT PET in PTLD identifies patients at low risk of relapse and offers clinically relevant information, particularly in patients in a partial remission by CT staging.

Electrical properties and conduction mechanisms of Ru-based thick-film (cermet) resistors

International Nuclear Information System (INIS)

Pike, G.E.; Seager, C.H.

1977-01-01

This paper presents an experimental study of the electrical conduction mechanisms in thick-film (cermet) resistor. The resistors were made from one custom and three commercially formulated inks with sheet resistivities ranging from 10 2 to 10 6 Ω/D 7 Alembertian in decade increments. Their microstructure and composition have been examined using optical and scanning electron microscopy, electron microprobe analysis, x-ray diffraction, and various chemical analyses. This portion of our study shows that the resistors are heterogeneous mixtures of metallic metal oxide particles (approx.4 x 10 -5 cm in diameter) and a lead silicate glass. The metal oxide particles are ruthenium containing pyrochlores, and are joined to form a continuous three-dimensional network of chain segments. The principal experimental work reported here is an extensive study of the electrical transport properties of the resistors. The temperature dependence of conductance has been measured from 1.2 to 400 K, and two features common to all resistors are found. There is a pronounced decrease in conductance at low temperatures and a shallow maximum at several hundred Kelvin. Within the same range of temperatures the reversible conductance as a function of electric field from 0 to 28 kV/cm has been studied. The resistors are non-Ohmic at all temperatures, but particularly at cryogenic temperatures for low fields. At higher fields the conductance shows a linear variation with electric field. The thick-film resistors are found to have a small dielectric constant and a (nearly) frequency-independent conductance from dc to 50 MHz. The magnetoresistance to 100 kG, the Hall mobility, and the Seebeck coefficient of most of the resistors have been measured and discovered to be quite small. Many of the electrical transport properties have also been determined for the metal oxide particles which were extracted from the fired resistors

Characteristics of electroplated Ni thick film on the PN junction semiconductor for beta-voltaic battery

Energy Technology Data Exchange (ETDEWEB)

Kim, Jin Joo; Uhm, Young Rang; Park, Keun Young; Son, Kwang Jae [Radioisotope Research Division, Korea Atomic Energy Research Institute, Daejeon (Korea, Republic of)

2014-12-15

Nickel (Ni) electroplating was implemented by using a metal Ni powder in order to establish a {sup 63}Ni plating condition on the PN junction semiconductor needed for production of betavoltaic battery. PN junction semiconductors with a Ni seed layer of 500 and 1000 Å were coated with Ni at current density from 10 to 50 mA cm{sup -2}. The surface roughness and average grain size of Ni deposits were investigated by XRD and SEM techniques. The roughness of Ni deposit was increased as the current density was increased, and decreased as the thickness of Ni seed layer was increased. The results showed that the optimum surface shape was obtained at a current density of 10 mA cm{sup -2} in seed layer with thickness of 500 Å, 20 mA cm{sup -2} of 1000 Å. Also, pure Ni deposit was well coated on a PN junction semiconductor without any oxide forms. Using the line width of (111) in XRD peak, the average grain size of the Ni thick firm was measured. The results showed that the average grain size was increased as the thickness of seed layer was increased.

Characteristics of electroplated Ni thick film on the PN junction semiconductor for beta-voltaic battery

International Nuclear Information System (INIS)

Kim, Jin Joo; Uhm, Young Rang; Park, Keun Young; Son, Kwang Jae

2014-01-01

Nickel (Ni) electroplating was implemented by using a metal Ni powder in order to establish a 63 Ni plating condition on the PN junction semiconductor needed for production of betavoltaic battery. PN junction semiconductors with a Ni seed layer of 500 and 1000 Å were coated with Ni at current density from 10 to 50 mA cm -2 . The surface roughness and average grain size of Ni deposits were investigated by XRD and SEM techniques. The roughness of Ni deposit was increased as the current density was increased, and decreased as the thickness of Ni seed layer was increased. The results showed that the optimum surface shape was obtained at a current density of 10 mA cm -2 in seed layer with thickness of 500 Å, 20 mA cm -2 of 1000 Å. Also, pure Ni deposit was well coated on a PN junction semiconductor without any oxide forms. Using the line width of (111) in XRD peak, the average grain size of the Ni thick firm was measured. The results showed that the average grain size was increased as the thickness of seed layer was increased

Structural characterization of terrestrial microbial Mn oxides from Pinal Creek, AZ

Science.gov (United States)

Bargar, J.R.; Fuller, C.C.; Marcus, M.A.; Brearley, A.J.; Perez De la Rosa, M.; Webb, S.M.; Caldwell, W.A.

2009-01-01

The microbial catalysis of Mn(II) oxidation is believed to be a dominant source of abundant sorption- and redox-active Mn oxides in marine, freshwater, and subsurface aquatic environments. In spite of their importance, environmental oxides of known biogenic origin have generally not been characterized in detail from a structural perspective. Hyporheic zone Mn oxide grain coatings at Pinal Creek, Arizona, a metals-contaminated stream, have been identified as being dominantly microbial in origin and are well studied from bulk chemistry and contaminant hydrology perspectives. This site thus presents an excellent opportunity to study the structures of terrestrial microbial Mn oxides in detail. XRD and EXAFS measurements performed in this study indicate that the hydrated Pinal Creek Mn oxide grain coatings are layer-type Mn oxides with dominantly hexagonal or pseudo-hexagonal layer symmetry. XRD and TEM measurements suggest the oxides to be nanoparticulate plates with average dimensions on the order of 11 nm thick ?? 35 nm diameter, but with individual particles exhibiting thickness as small as a single layer and sheets as wide as 500 nm. The hydrated oxides exhibit a 10-?? basal-plane spacing and turbostratic disorder. EXAFS analyses suggest the oxides contain layer Mn(IV) site vacancy defects, and layer Mn(III) is inferred to be present, as deduced from Jahn-Teller distortion of the local structure. The physical geometry and structural details of the coatings suggest formation within microbial biofilms. The biogenic Mn oxides are stable with respect to transformation into thermodynamically more stable phases over a time scale of at least 5 months. The nanoparticulate layered structural motif, also observed in pure culture laboratory studies, appears to be characteristic of biogenic Mn oxides and may explain the common occurrence of this mineral habit in soils and sediments. ?? 2008 Elsevier Ltd.

Formation of Oxides in the Interior of Friction Stir Welds

Science.gov (United States)

Schneider, Judy; Chen, Po; Nunes, Arthur C., Jr.

2016-01-01

In friction stir welding (FSWing) the actual solid state joining takes place between the faying surfaces which form the weld seam. Thus the seam trace is often investigated for clues when the strength of the weld is reduced. Aluminum and its alloys are known to form a native, protective oxide on the surface. If these native surface oxides are not sufficiently broken up during the FSW process, they are reported to remain in the FSW interior and weaken the bond strength. This type of weld defect has been referred to as a lazy "S", lazy "Z", joint line defect, kissing bond, or residual oxide defect. Usually these defects are mitigated by modification of the process parameters, such as increased tool rotation rate, which causes a finer breakup of the native oxide particles. This study proposes that there may be an alternative mechanism for formation of oxides found within the weld nugget. As the oxidation rate increases at elevated temperatures above 400ºC, it may be possible for enhanced oxidation to occur on the interior surfaces during the FSW process from entrained air entering the seam gap. Normally, FSWs of aluminum alloys are made without a purge gas and it is unknown how process parameters and initial fit up could affect a potential air path into the interior during the processing. In addition, variations in FSW parameters, such as the tool rotation, are known to have a strong influence on the FSW temperature which may affect the oxidation rate if internal surfaces are exposed to entrained air. A series of FSWs were made in 3 different thickness panels of AA2219 (0.95, 1.27 and 1.56 cm) at 2 different weld pitches. As the thickness of the panels increased, there was an increased tendency for a gap to form in advance of the weld tool. If sufficient air is able to enter the workpiece gap prior to consolidation, the weld temperature can increase the oxidation rate on the interior surfaces. These oxidation rates would also be accelerated in areas of localized

Oxide superconducting ribbon and its fabrication process

International Nuclear Information System (INIS)

Belouet, C.

1990-01-01

A film without cavities, of perovskite type superconducting oxide is deposited by melting on a metal or composite flexible substrate with a rectangular cross section. The film thickness is comprised between 1 and 100 micrometers and orientation of C axis of superconducting crystals is perpendicular to the subtrate [fr

Solid oxide fuel cell having a monolithic core

International Nuclear Information System (INIS)

Ackerman, J.P.; Young, J.E.

1984-01-01

A solid oxide fuel cell for electrochemically combining fuel and oxidant for generating galvanic output, wherein the cell core has an array of electrolyte and interconnect walls that are substantially devoid of any composite inert materials for support. Instead, the core is monolithic, where each electrolyte wall consists of thin layers of cathode and anode materials sandwiching a thin layer of electrolyte material therebetween, and each interconnect wall consists of thin layers of the cathode and anode materials sandwiching a thin layer of interconnect material therebetween. The electrolyte walls are arranged and backfolded between adjacent interconnect walls operable to define a plurality of core passageways alternately arranged where the inside faces thereof have only the anode material or only the cathode material exposed. Means direct the fuel to the anode-exposed core passageways and means direct the oxidant to the cathode-exposed core passageway; and means also direct the galvanic output to an exterior circuit. Each layer of the electrolyte and interconnect materials is of the order of 0.002-0.01 cm thick; and each layer of the cathode and anode materials is of the order of 0.002-0.05 cm thick

Enhanced optical transmission through a star-shaped bull's eye at dual resonant-bands in UV and the visible spectral range.

Science.gov (United States)

Nazari, Tavakol; Khazaeinezhad, Reza; Jung, Woohyun; Joo, Boram; Kong, Byung-Joo; Oh, Kyunghwan

2015-07-13

Dual resonant bands in UV and the visible range were simultaneously observed in the enhanced optical transmission (EOT) through star-shaped plasmonic structures. EOTs through four types of polygonal bull's eyes with a star aperture surrounded by the concentric star grooves were analyzed and compared for 3, 4, 5, and 6 corners, using finite difference time domain (FDTD) method. In contrast to plasmonic resonances in the visible range, the UV-band resonance intensity was found to scale with the number of corners, which is related with higher order multipole interactions. Spectral positions and relative intensities of the dual resonances were analyzed parametrically to find optimal conditions to maximize EOT in UV-visible dual bands.

Absences of Endothelial Microvesicle Changes in the Presence of the Endotheliopathy of Trauma

DEFF Research Database (Denmark)

Wade, Charles E; Matijevic, Nena; Wang, Yao-Wei W

2018-01-01

thrombomodulin levels. Based on thrombelastography, EOT had reductions in clot initiation, amplification, propagation and strength, and a greater frequency of transfusion, 92% vs 33%. There were no differences in EMVs irrespective of the antibody used. Plasma norepinephrine, sE-selectin, sVE-cadherin and histone....... Endothelial microvesicles (EMVs) represent cellular damage. We hypothesized that EOT is associated with endothelial damage and apoptosis resulting in an increase in circulating EMVs. METHODS: Prospective, observational study enrolling severely injured patients. Twelve patients with EOT, based on elevated...... by flow cytometry using varied monoclonal antibodies associated with endothelial cells. Significance was set at p Syndecan-1, 230 (158, 293) vs. 19 (14, 25) ng/ml, epinephrine and soluble...

HIGHLY MICROBIAL RESISTANT GRAPHEME OXIDE NANOPARTICLES: SYNTHESIS, CHARACTERIZATION AND ITS ANTIBACTERIAL ACTIVITY

OpenAIRE

Vijaylaxmee Mishra; Richa Sharma

2014-01-01

The present work deigned to prepare graphene oxide nanoparticles and their antimicrobial activity has been evaluated. Graphene oxide is a singal layer of carbon arranged in a hexagonal pattern the basal planes and the edges of graphene oxide nanoparticles contain functional exogenous groups such as hydroxyl, carbonyl and epoxy group, which not only expand the interlayer distance but also make the atomic thick layer hydrophilic. Most important application in area related to transparent conduct...

Physicochemical and mechanical properties of zirconium oxide and niobium oxide modified Portland cement-based experimental endodontic sealers.

Science.gov (United States)

Viapiana, R; Flumignan, D L; Guerreiro-Tanomaru, J M; Camilleri, J; Tanomaru-Filho, M

2014-05-01

To evaluate the physicochemical and mechanical properties of Portland cement-based experimental sealers (ES) with different radiopacifying agents (zirconium oxide and niobium oxide micro- and nanoparticles) in comparison with the following conventional sealers: AH Plus, MTA Fillapex and Sealapex. The materials were tested for setting time, compressive strength, flow, film thickness, radiopacity, solubility, dimensional stability and formaldehyde release. Data were subjected to anova and Tukey tests (P 0.05) and lower solubility when compared with MTA Fillapex and Sealapex (P Portland cement-based experimental endodontic sealers presented physicochemical properties according to the specifications no 57 ANSI/ADA (ADA Professional Product Review, 2008) and ISO 6876 (Dentistry - Root Canal Sealing Materials, 2012, British Standards Institution, London, UK). The sealers had setting times and flow ability that was adequate for clinical use, satisfactory compressive strength and low solubility. Additional studies should be carried out with the purpose of decreasing the film thickness and to determine the ideal ratio of radiopacifying agents in Portland cement-based root canal sealers. © 2013 International Endodontic Journal. Published by John Wiley & Sons Ltd.

Improved performances of organic light-emitting diodes with mixed layer and metal oxide as anode buffer

Science.gov (United States)

Xue, Qin; Liu, Shouyin; Zhang, Shiming; Chen, Ping; Zhao, Yi; Liu, Shiyong

2013-01-01

We fabricated organic light-emitting devices (OLEDs) employing 2-methyl-9,10-di(2-naphthyl)-anthracene (MADN) as hole-transport material (HTM) instead of commonly used N,N'-bis-(1-naphthyl)-N,N'-diphenyl,1,1'-biphenyl-4,4'-diamine (NPB). After inserting a 0.9 nm thick molybdenum oxide (MoOx) layer at the indium tin oxide (ITO)/MADN interface and a 5 nm thick mixed layer at the organic/organic heterojunction interface, the power conversion efficiency of the device can be increased by 4-fold.

Study of Room Temperature H2S Gas Sensing Behavior of CuO-modified BSST Thick Film Resistors

Directory of Open Access Journals (Sweden)

H. M. Baviskar

2008-05-01

Full Text Available Thick films of (Ba0.1Sr0.9(Sn0.5Ti0.5O3 referred as BSST, were prepared by screen-printing technique. The preparation, characterization and gas sensing properties of pure and CuO-BSST mixed oxide semiconductors have been investigated. The mixed oxides were obtained by dipping the pure BSST thick films into 0.01 M aqueous solution of CuCl2, for different intervals of time. Pure BSST was observed to be less sensitive to H2S gas. However, mixed oxides of CuO and BSST were observed to be highly sensitive to H2S gas. Upon exposure to H2S gas, the barrier height of CuO-BSST intergranular regions decreases markedly due to the chemical transformation of CuO into well conducting CuS leading to a drastic decrease in resistance. The crucial gas response was found to H2S gas at room temperature and no cross sensitivity was observed to other hazardous and polluting gases. The effects of microstructure and doping concentration on the gas response, selectivity, response and recovery of the sensor in the presence of H2S gas were studied and discussed.

Photoconduction in silicon rich oxide films

Energy Technology Data Exchange (ETDEWEB)

Luna-Lopez, J A; Carrillo-Lopez, J; Flores-Gracia, F J; Garcia-Salgado, G [CIDS-ICUAP, Benemerita Universidad Autonoma de Puebla. Ed. 103 D and C, col. San Manuel, Puebla, Pue. Mexico 72570 (Mexico); Aceves-Mijares, M; Morales-Sanchez, A, E-mail: jluna@buap.siu.m, E-mail: jluna@inaoep.m [INAOE, Luis Enrique Erro No. 1, Apdo. 51, Tonantzintla, Puebla, Mexico 72000 (Mexico)

2009-05-01

Photoconduction of silicon rich oxide (SRO) thin films were studied by current-voltage (I-V) measurements, where ultraviolet (UV) and white (Vis) light illumination were applied. SRO thin films were deposited by low pressure chemical vapour deposition (LPCVD) technique, using SiH{sub 4} (silane) and N{sub 2}O (nitrous oxide) as reactive gases at 700 {sup 0}. The gas flow ratio, Ro = [N{sub 2}O]/[SiH{sub 4}] was used to control the silicon excess. The thickness and refractive index of the SRO films were 72.0 nm, 75.5 nm, 59.1 nm, 73.4 nm and 1.7, 1.5, 1.46, 1.45, corresponding to R{sub o} = 10, 20, 30 and 50, respectively. These results were obtained by null ellipsometry. Si nanoparticles (Si-nps) and defects within SRO films permit to obtain interesting photoelectric properties as a high photocurrent and photoconduction. These effects strongly depend on the silicon excess, thickness and structure type. Two different structures (Al/SRO/Si and Al/SRO/SRO/Si metal-oxide-semiconductor (MOS)-like structures) were fabricated and used as devices. The photocurrent in these structures is dominated by the generation of carriers due to the incident photon energies ({approx}3.0-1.6 eV and 5 eV). These structures showed large photoconductive response at room temperature. Therefore, these structures have potential applications in optoelectronics devices.

Oxidative fabrication of patterned, large, non-flaking CuO nanowire arrays

International Nuclear Information System (INIS)

Mumm, F; Sikorski, P

2011-01-01

We report a simple and fast approach to fabricate large, non-flaking arrays of CuO nanowires by oxidizing thin copper substrates in air. Oxidative CuO nanowire growth is commonly accompanied by oxide layer flaking due to stress at the copper-copper oxide interface. Using thin substrates is shown to prevent this flaking by introducing favourable material thickness ratios in the samples after oxidation. Additionally, thin foils allow larger scale topographic patterns to be transferred from an underlying mould to realize non-flat, nanowire-decorated surfaces. Further patterning is possible by electrodeposition of a nickel layer, which restricts nanowire growth to specific areas of the sample.

Influence of steam generator surface state on corrosion and oxide formation

International Nuclear Information System (INIS)

Mazenc, Arnaud; Leclercq, Stephanie; Seyeux, Antoine; Galtayries, Anouk; Marcus, Philippe

2012-09-01

The corrosion and release of nickel-based alloy Steam Generator tubes are partly due to their surface state. Among the most important parameters influencing the corrosion, the effect of grain size and the effect of grain crystallographic orientation have been chosen to be studied. The aim of this study is to determine how these parameters have an impact on the corrosion of Steam Generator tubes. Thermal treatments (700 deg. C and 1050 deg. C) have been performed on several samples in Alloy 690 to obtain homogeneous grain sizes, varying from 25 μm to 110 μm. Two samples have been oxidised for four days in a recirculating autoclave, reproducing primary conditions. The changes of oxide composition and thickness were examined by ToF-SIMS on samples exposed to primary water conditions. The intensity profiles versus thicknesses of characteristic oxide anions, such as CrO - , NiO - or FeO - enable us to evaluate the effect of grain size and crystallographic orientation on the formation of an enriched inner chromium layer. As regards to the grain size, there was no effect on the growth, but smaller grains led to a chromium-rich oxide layer. The effect of crystallographic orientation was observed on the oxidation kinetics and the composition of oxide scales. (authors)

Electrochemical behavior of uranium oxide in a LiCl-Li2O molten salt with the integrated cathode assembly

International Nuclear Information System (INIS)

Park, Sung Bin; Park, Byung Heung; Kang, Dae Seoung; Kwon, Seon Gil; Seo, Chung Seok; Park, Seong Won

2005-01-01

Electrochemical reduction of uranium oxide to uranium metal was studied in a LiCl-Li 2 O molten salt system. By means of a cyclic voltammetry and a chronopotentiometry, the electrolytic reduction of uranium oxide has been studied to establish the reduction mechanisms and the effects of the thickness of the uranium oxide on the overpotential of the cathode and anode were investigated. From the voltamograms, the reduction potentials of the uranium oxide and Li 2 O were obtained and the two mechanisms of the electrolytic reduction were considered with regards to the applied cathode potential. In the chronopotentiograms, the exchange current, the transfer coefficient and the maximum allowable current based on the Tafel behavior were obtained according to the thickness of the uranium oxide which is loaded into the porous MgO membrane. (author)

Accelerated evaporation of water on graphene oxide.

Science.gov (United States)

Wan, Rongzheng; Shi, Guosheng

2017-03-29

Using molecular dynamics simulations, we show that the evaporation of nanoscale volumes of water on patterned graphene oxide is faster than that on homogeneous graphene oxide. The evaporation rate of water is insensitive to variation in the oxidation degree of the oxidized regions, so long as the water film is only distributed on the oxidized regions. The evaporation rate drops when the water film spreads onto the unoxidized regions. Further analysis showed that varying the oxidation degree observably changed the interaction between the outmost water molecules and the solid surface, but the total interaction for the outmost water molecules only changed a very limited amount due to the correspondingly regulated water-water interaction when the water film is only distributed on the oxidized regions. When the oxidation degree is too low and some unoxidized regions are also covered by the water film, the thickness of the water film decreases, which extends the lifetime of the hydrogen bonds for the outmost water molecules and lowers the evaporation rate of the water. The insensitivity of water evaporation to the oxidation degree indicates that we only need to control the scale of the unoxidized and oxidized regions for graphene oxide to regulate the evaporation of nanoscale volumes of water.

Cholesterol Protects the Oxidized Lipid Bilayer from Water Injury

DEFF Research Database (Denmark)

Owen, Michael C; Kulig, Waldemar; Rog, Tomasz

2018-01-01

In an effort to delineate how cholesterol protects membrane structure under oxidative stress conditions, we monitored the changes to the structure of lipid bilayers comprising 30 mol% cholesterol and an increasing concentration of Class B oxidized 1-palmitoyl-2-oleoylphosphatidylcholine (POPC...... in a characteristic reduction in bilayer thickness and increase in area per lipid, thereby increasing the exposure of the membrane hydrophobic region to water. However, cholesterol was observed to help reduce water injury by moving into the bilayer core and forming more hydrogen bonds with the oxPLs. Cholesterol also...... resists altering its tilt angle, helping to maintain membrane integrity. Water that enters the 1-nm-thick core region remains part of the bulk water on either side of the bilayer, with relatively few water molecules able to traverse through the bilayer. In cholesterol-rich membranes, the bilayer does...

Aluminium oxide barrier films on polymeric web and their conversion for packaging applications

OpenAIRE

Struller, CF; Kelly, PJ; Copeland, NJ; Tobin, V; Assender, HE; Holliday, CW; Read, SJ

2013-01-01

In recent years, inorganic transparent barrier layers such as aluminium oxide or silicon oxide deposited onto polymer films have emerged as an attractive alternative to polymer based transparent barrier layers for flexible food packaging materials. For this application, barrier properties against water vapour and oxygen are critical. Aluminium oxide coatings can provide good barrier levels at thicknesses in the nanometre range, compared to several micrometres for polymer-based barrier layers....

A Prediction Study of Aluminum Alloy Oxidation of the Fuel Cladding in Jordan Research and Training Reactor

Energy Technology Data Exchange (ETDEWEB)

Tahk, Y. W.; Oh, J. Y.; Lee, B. H.; Seo, C. G.; Chae, H. T.; Yim, J. S. [Korea Atomic Energy Research Institute, Daejeon (Korea, Republic of)

2010-10-15

U{sub 3}Si{sub 2}-Al dispersion fuel with Al cladding will be used for Jordan Research and Training Reactor (JRTR). Aluminum alloy cladding experiences the oxidation layer growth on the surface during the reactor operation. The formation of oxides on the cladding affects fuel performance by increasing fuel temperature. According to the current JRTR fuel management scheme and operation strategy for 5 MW power, a fresh fuel is discharged after 900 effective full power days (EFPD) with 18 cycles of 50 days loading. For the proper prediction of the aluminum oxide thickness of fuel cladding during the long residence time, a reliable model is needed. In this work, several oxide thickness prediction models are compared with the measured data from in-pile test by RERTR program. Moreover, specific parametric studies and a preliminary prediction of the aluminum alloy oxidation using the latest model are performed for JRTR fuel

Process for growing a film epitaxially upon an oxide surface and structures formed with the process

Science.gov (United States)

McKee, Rodney A.; Walker, Frederick J.

1995-01-01

A process and structure wherein a film comprised of a perovskite or a spinel is built epitaxially upon a surface, such as an alkaline earth oxide surface, involves the epitaxial build up of alternating constituent metal oxide planes of the perovskite or spinel. The first layer of metal oxide built upon the surface includes a metal element which provides a small cation in the crystalline structure of the perovskite or spinel, and the second layer of metal oxide built upon the surface includes a metal element which provides a large cation in the crystalline structure of the perovskite or spinel. The layering sequence involved in the film build up reduces problems which would otherwise result from the interfacial electrostatics at the first atomic layers, and these oxides can be stabilized as commensurate thin films at a unit cell thickness or grown with high crystal quality to thicknesses of 0.5-0.7 .mu.m for optical device applications.

Autonomous Sea-Ice Thickness Survey

Science.gov (United States)

2016-06-01

the conductivity of an infinitely thick slab of sea ice. Ice thickness, Hice, is then obtained by subtracting the height of the ...Thickness Survey of Sea Ice Runway” ERDC/CRREL SR-16-4 ii Abstract We conducted an autonomous survey of sea -ice thickness using the Polar rover Yeti...efficiency relative to manual surveys routinely con- ducted to assess the safety of roads and runways constructed on the sea ice. Yeti executed the

Investigation of a new methodology in high temperature oxidation application to commercial austenitic steels

Energy Technology Data Exchange (ETDEWEB)

Vangeli, P.; Ivarsson, B. [Avesta Sheffield, R and D (Sweden)

2001-07-01

Avesta Sheffield R and D has evaluated a scaling temperature for heat resistant steels from laboratory gravimetric measurements of cyclic exposures. In this paper, this old method is described. A new methodology, based on the results of isothermal and cyclic tests, is proposed and discussed. It includes isothermal and cyclic oxidation kinetics of different commercial austenitic steels. Oxidation of Avesta Sheffield 153MA, 253MA and 353MA and standard commercial heat resistant steels 309S, 310S and A800 have been investigated under isothermal and cyclic conditions, in air, in the temperature range 800-1200 C. For all alloys, oxidation rates obey a parabolic law below a critical temperature. The activation energies have been calculated. Kinetics of the cyclic tests show that a critical mass change corresponding to a critical thickness of the oxide scale is responsible for the spallation start. This thickness depends on the composition of the alloys, and is very much increased by alloying minor elements like Ce. (orig.)

Thickness evaluation using a new relationship between film density and penetrated thickness in radiography

International Nuclear Information System (INIS)

Lee, Sung Sik; Kim, Young H.

2005-01-01

In order to improve the accuracies in the thickness evaluation using radiography, a new relationship between film density and penetrated thickness has been proposed, and experimental verification of the proposed relationship was carried out by using the X- and γ-ray radiographs of two carbon steel step wedges. A new parameter, the logarithmic gradient of film density, was defined in order to express the characteristics of the radiographic film for wider range of film density. A new relationship between the film density and the penetrated thickness were formulated using the logarithmic gradient of the film density. In experiment, the logarithmic gradient of the film density was independent on both the exposure and the film density and measured for the radiographic film used in the present work from the slope of the fitting lines for the same penetrated thickness. Experimental results verifies the accuracy of the proposed relationship between film density and the penetrated thickness for the range of film density from 1.0 to 3.5. The thickness can be more accurately determined by using the proposed relationship and the parameters determined by experiment. It is also found that the γ-ray having simple energy spectrum is more appropriate radiation source for the evaluation of the thickness from the film density of the radiograph

Electrical and Gas Sensing Properties of SnO2 Thick Film Resistors Prepared by Screen-printing Method

Directory of Open Access Journals (Sweden)

R. Y. BORSE

2008-10-01

Full Text Available Thick films of tin-oxide (SnO2 were deposited on alumina substrates employing screen-printing technique. The films were dried and fired at 680 0C for 30 minutes. The variation of D.C. resistance of thick films was measured in air as well as in H2S gas atmosphere as a function of temperature. The SnO2 films exhibit semiconducting behaviour. The SnO2 thick films studied were also showing decrease in resistance with increase of concentration of H2S gas. The film resistors showed the highest sensitivity to H2S gas at 350 0C. The XRD studies of the thick film indicate the presence of different phases of SnO2. The elemental analysis was confirmed by EDX spectra. The surface morphological study of the films was analyzed by SEM. The microstructure of the films was porous resulting from loosely interconnected small crystallites. The parameters such as grain size, activation energy, sensitivity and response time were described.

Ultraviolet-visible spectroscopy of graphene oxides

Directory of Open Access Journals (Sweden)

Qi Lai

2012-09-01

Full Text Available Dispersions of few-layer (1-3 layers, multi-layer (4-10 layers and thick-layer (>10 layers graphene oxide (GO were prepared by a modified Hummers method with different mass ratios of KMnO4 to graphite. Ultraviolet-visible (UV-vis spectroscopic data show that few-layer GO dispersions can be distinguished from multi- and thick-layer dispersions by a more intense peak at 230 nm. Atomic force microscopy (AFM images of few-layer GO contain a single peak, those of multi-layer GO exhibit a shoulder and those of thick-layer GO do not contain a peak or shoulder. These findings allow qualitative analysis of GO dispersions. X-ray photoelectron spectra (XPS show that the change of UV-vis absorption intensity of GO is caused by a conjugative effect related to chromophore aggregation that influences the π-π* plasmon peak.

Air-Impregnated Nanoporous Anodic Aluminum Oxide Layers for Enhancing the Corrosion Resistance of Aluminum.

Science.gov (United States)

Jeong, Chanyoung; Lee, Junghoon; Sheppard, Keith; Choi, Chang-Hwan

2015-10-13

Nanoporous anodic aluminum oxide layers were fabricated on aluminum substrates with systematically varied pore diameters (20-80 nm) and oxide thicknesses (150-500 nm) by controlling the anodizing voltage and time and subsequent pore-widening process conditions. The porous nanostructures were then coated with a thin (only a couple of nanometers thick) Teflon film to make the surface hydrophobic and trap air in the pores. The corrosion resistance of the aluminum substrate was evaluated by a potentiodynamic polarization measurement in 3.5 wt % NaCl solution (saltwater). Results showed that the hydrophobic nanoporous anodic aluminum oxide layer significantly enhanced the corrosion resistance of the aluminum substrate compared to a hydrophilic oxide layer of the same nanostructures, to bare (nonanodized) aluminum with only a natural oxide layer on top, and to the latter coated with a thin Teflon film. The hydrophobic nanoporous anodic aluminum oxide layer with the largest pore diameter and the thickest oxide layer (i.e., the maximized air fraction) resulted in the best corrosion resistance with a corrosion inhibition efficiency of up to 99% for up to 7 days. The results demonstrate that the air impregnating the hydrophobic nanopores can effectively inhibit the penetration of corrosive media into the pores, leading to a significant improvement in corrosion resistance.

Ion beam analysis of the dry thermal oxidation of thin polycrystalline SiGe films

International Nuclear Information System (INIS)

Kling, A.; Soares, J.C.; Prieto, A.C.; Jimenez, J.; Rodriguez, A.; Sangrador, J.; Rodriguez, T.

2005-01-01

Nanoparticles of Ge embedded in a formed dielectric matrix appear as very promising systems for electronic and photonic applications. We present here an exhaustive characterization of the oxidation process of polycrystalline SiGe layers from the starting of its oxidation process to the total oxidation of it. We have characterized the process by RBS, FTIR and Raman spectroscopy, showing the necessity to use different techniques in order to get a full view of the process. First the Si-Si and Si-Ge bonds are oxidized growing SiO 2 , and Ge segregates from the SiO 2 . As soon as all Si is oxidized GeO 2 is growing gradually. RBS has demonstrated to be very useful to characterize the SiO 2 and the remaining non-oxidized poly-SiGe layer thickness, as well as for the determination of the Ge fraction, where the high sensitivity of this technique allows to explore its whole range. On the other hand, for the reliable determination of the GeO 2 thickness, information on the amount of Ge-O bonding had to be obtained from FTIR spectra. Raman spectroscopy yields detailed information about the oxidation processes for different bonds (Si-Si, Si-Ge, Ge-Ge)

Titanium oxidation-reduction at low oxygen pressure under electron bombardment

International Nuclear Information System (INIS)

Brasca, R.; Passeggi, M.C.G.; Ferron, J.

2006-01-01

The effect of the electron bombardment on the first stages of the titanium oxidation process has been studied by means of Auger Electron Spectroscopy. Using Factor Analysis and the valence electron dependence behaviour of the titanium LMV Auger transition, we found that the process is strongly dependent on the oxygen pressure and electron current density. Depending on the irradiation conditions, films of different thickness and Ti oxidized states are obtained

Gate tunneling current and quantum capacitance in metal-oxide-semiconductor devices with graphene gate electrodes

Science.gov (United States)

An, Yanbin; Shekhawat, Aniruddh; Behnam, Ashkan; Pop, Eric; Ural, Ant

2016-11-01

Metal-oxide-semiconductor (MOS) devices with graphene as the metal gate electrode, silicon dioxide with thicknesses ranging from 5 to 20 nm as the dielectric, and p-type silicon as the semiconductor are fabricated and characterized. It is found that Fowler-Nordheim (F-N) tunneling dominates the gate tunneling current in these devices for oxide thicknesses of 10 nm and larger, whereas for devices with 5 nm oxide, direct tunneling starts to play a role in determining the total gate current. Furthermore, the temperature dependences of the F-N tunneling current for the 10 nm devices are characterized in the temperature range 77-300 K. The F-N coefficients and the effective tunneling barrier height are extracted as a function of temperature. It is found that the effective barrier height decreases with increasing temperature, which is in agreement with the results previously reported for conventional MOS devices with polysilicon or metal gate electrodes. In addition, high frequency capacitance-voltage measurements of these MOS devices are performed, which depict a local capacitance minimum under accumulation for thin oxides. By analyzing the data using numerical calculations based on the modified density of states of graphene in the presence of charged impurities, it is shown that this local minimum is due to the contribution of the quantum capacitance of graphene. Finally, the workfunction of the graphene gate electrode is extracted by determining the flat-band voltage as a function of oxide thickness. These results show that graphene is a promising candidate as the gate electrode in metal-oxide-semiconductor devices.

Effect of decontamination on oxidation of austenitic stainless steel in reactor conditions

International Nuclear Information System (INIS)

Starkman, T.

1984-07-01

Austenitic stainless steels were oxidized in static autoclaves in light water reactor conditions. After the autoclave treatments the specimens were decontaminated with the aid of alkaline potassium permanganate (AP) and oxalic and citric acid (CITROX) as well as electrochemically in H 3 PO 4 . Alternating oxidation and decontamination tests were performed. An elemental analysis of the surfaces of the specimens was carried out by electron spectroscopy. Changes in structures and thicknesses of the oxide layers were observed. (author)

Effects of micro arc oxidation on fatigue limits and fracture morphologies of 7475 high strength aluminum alloy

Energy Technology Data Exchange (ETDEWEB)

Dejun, Kong, E-mail: kong-dejun@163.com [College of Mechanical Engineering, Changzhou University, Changzhou, 213164 (China); Jiangsu Key Laboratory of Materials Surface Science and Technology, Changzhou University, Changzhou, 213164 (China); Hao, Liu; Jinchun, Wang [College of Mechanical Engineering, Changzhou University, Changzhou, 213164 (China)

2015-11-25

The oxide coatings with thicknesses of 8 μm, 10 μm, and 15 μm were prepared on 7475 aluminum alloy with micro arc oxidation (MAO) by controlling MAO time, the fatigue limits of original and MAO samples were contrastively measured by the Roccati method. The surface-interface morphologies, fracture morphologies, surface phases, and residual stresses of MAO coating were analyzed with a scanning electron microscopy (SEM), X-ray diffractometer (XRD) and XRD stress tester, respectively. The results show that fatigue limits of the MAO samples decreases as the coating thickness increasing. The fatigue limit of MAO sample with thickness of 8 μm, 10 μm, and 15 μm decreases by 6.48%, 8.33%, and 11.11%, respectively, compared with the original sample. The residual stress and defects introduced by MAO were the main factors of decreasing fatigue limits. - Graphical abstract: The fatigue limit of original sample was 216 MPa (a), while that of MAO samples with thickness of 8 μm, 10 μm and 15 μm was 202 MPa, 198 MPa and 192 MPa (b). The fatigue limit of MAO samples with thickness of 8 μm, 10 μm and 15 μm decreased by 6.48%, 8.33% and 11.11% compared with that of the original sample, as a result, the fatigue limit decreased with the MAO film thickness increasing. - Highlights: • The fatigue limits of MAO samples decrease with the oxide thickness increasing. • The overgrowth regions cause the crack source expanding. • The overgrowth of MAO film and tensile residual stress decrease fatigue limit.

Solid oxide fuel cell cathode with oxygen-reducing layer

Science.gov (United States)

Surdoval, Wayne A.; Berry, David A.; Shultz, Travis

2018-04-03

The disclosure provides a SOFC comprised of an electrolyte, anode, and cathode, where the cathode comprises an MIEC and an oxygen-reducing layer. The oxygen-reducing layer is in contact with the MIEC, and the MIEC is generally between and separating the oxygen-reducing layer and the electrolyte. The oxygen-reducing layer is comprised of single element oxides, single element carbonates, or mixtures thereof, and has a thickness of less than about 30 nm. In a particular embodiment, the thickness is less than 5 nm. In another embodiment, the thickness is about 3 monolayers or less. The oxygen-reducing layer may be a continuous film or a discontinuous film with various coverage ratios. The oxygen-reducing layer at the thicknesses described may be generated on the MIEC surface using means known in the art such as, for example, ALD processes.

Simulation of the selective oxidation process of semiconductors

International Nuclear Information System (INIS)

Chahoud, M.

2012-01-01

A new approach to simulate the selective oxidation of semiconductors is presented. This approach is based on the so-called b lack box simulation method . This method is usually used to simulate complex processes. The chemical and physical details within the process are not considered. Only the input and output data of the process are relevant for the simulation. A virtual function linking the input and output data has to be found. In the case of selective oxidation the input data are the mask geometry and the oxidation duration whereas the output data are the oxidation thickness distribution. The virtual function is determined as four virtual diffusion processes between the masked und non-masked areas. Each process delivers one part of the oxidation profile. The method is applied successfully on the oxidation system silicon-silicon nitride (Si-Si 3 N 4 ). The fitting parameters are determined through comparison of experimental and simulation results two-dimensionally.(author)

Growth of micrometric oxide layers to explore laser decontamination of metallic surfaces