Defect production in simulated cascades: cascade quenching and short-term annealing

International Nuclear Information System (INIS)

Heinisch, H.L.

1982-01-01

Defect production in high energy displacement cascades has been modeled using the computer code MARLOWE to generate the cascades and the stochastic computer code ALSOME to simulate the cascade quenching and short-term annealing of isolated cascades. The quenching is accomplished by using ALSOME with exaggerated values for defect mobilities and critical reaction distanes for recombination and clustering, which are in effect until the number of defect pairs is equal to the value determined from resistivity experiments at 4K. Then normal mobilities and reaction distances are used during short-term annealing to a point representative of Stage III recovery. Effects of cascade interactions at low fluences are also being investigated. The quenching parameter values were empirically determined for 30 keV cascades. The results agree well with experimental information throughout the range from 1 keV to 100 keV. Even after quenching and short-term annealing the high energy cascades behave as a collection of lower energy subcascades and lobes. Cascades generated in a crystal having thermal displacements were found to be in better agreement with experiments after quenching and annealing than those generated in a non-thermal crystal

The defect chemistry of nitrogen in oxides: A review of experimental and theoretical studies

International Nuclear Information System (INIS)

Polfus, Jonathan M.; Norby, Truls; Haugsrud, Reidar

2013-01-01

Incorporation of nitrogen into oxides has in recent years received increased attention as a variable for tuning their functional properties. A vast number of reports have been devoted to improving the photocatalytic properties of TiO 2 , p-type charge carrier concentration in ZnO and the ionic transport properties of ZrO 2 by nitrogen doping. In comparison, the fundamentals of the nitrogen related defect chemistry for a wider range of oxides have been less focused upon. In the present contribution, we review experimental and computational investigations of the nitrogen related defect chemistry of insulating and semiconducting oxides. The interaction between nitrogen and protons is important and emphasized. Specifically, the stability of nitrogen defects such as N O / , NH O × and (NH 2 ) O • is evaluated under various conditions and their atomistic and electronic structure is presented. A final discussion is devoted to the role of nitrogen with respect to transport properties and photocatalytic activity of oxides. - Graphical abstract: Experimental and theoretical investigations of the nitrogen related defect chemistry of a range of wide band gap oxides is reviewed. The interaction between nitrogen dopants and protons is emphasized and described through the atomistic and electronic structure as well as defect chemical processes involving NH and NH 2 defects. Consequently, the physical properties of oxides containing such species are discussed with respect to e.g., diffusion and photocatalytic properties. Highlights: ► Experimental and theoretical investigations of the nitrogen and hydrogen related defect chemistry of wide band gap oxides is reviewed. ► The interaction between nitrogen dopants and protons is important and emphasized. ► Diffusion and photocatalytic properties of N-doped oxides are discussed.

Defective (U-14 C) palmitic acid oxidation in Duchenne muscular dystrophy

Energy Technology Data Exchange (ETDEWEB)

Carroll, J.E.; Norris, B.J.; Brooke, M.H.

1985-01-01

Compared with normal skeletal muscle, muscle from patients with Duchenne dystrophy had decreased (U-14 C) palmitic acid oxidation. (1-14 C) palmitic acid oxidation was normal. These results may indicate a defect in intramitochondrial fatty acid oxidation.

Defective [U-14 C] palmitic acid oxidation in Duchenne muscular dystrophy

International Nuclear Information System (INIS)

Carroll, J.E.; Norris, B.J.; Brooke, M.H.

1985-01-01

Compared with normal skeletal muscle, muscle from patients with Duchenne dystrophy had decreased [U-14 C] palmitic acid oxidation. [1-14 C] palmitic acid oxidation was normal. These results may indicate a defect in intramitochondrial fatty acid oxidation

Defects in oxide surfaces studied by atomic force and scanning tunneling microscopy

Directory of Open Access Journals (Sweden)

Thomas König

2011-01-01

Full Text Available Surfaces of thin oxide films were investigated by means of a dual mode NC-AFM/STM. Apart from imaging the surface termination by NC-AFM with atomic resolution, point defects in magnesium oxide on Ag(001 and line defects in aluminum oxide on NiAl(110, respectively, were thoroughly studied. The contact potential was determined by Kelvin probe force microscopy (KPFM and the electronic structure by scanning tunneling spectroscopy (STS. On magnesium oxide, different color centers, i.e., F0, F+, F2+ and divacancies, have different effects on the contact potential. These differences enabled classification and unambiguous differentiation by KPFM. True atomic resolution shows the topography at line defects in aluminum oxide. At these domain boundaries, STS and KPFM verify F2+-like centers, which have been predicted by density functional theory calculations. Thus, by determining the contact potential and the electronic structure with a spatial resolution in the nanometer range, NC-AFM and STM can be successfully applied on thin oxide films beyond imaging the topography of the surface atoms.

Mitochondrial fatty acid oxidation defects--remaining challenges

DEFF Research Database (Denmark)

Gregersen, Niels; Andresen, Brage S; Pedersen, Christina B

2008-01-01

Mitochondrial fatty acid oxidation defects have been recognized since the early 1970s. The discovery rate has been rather constant, with 3-4 'new' disorders identified every decade and with the most recent example, ACAD9 deficiency, reported in 2007. In this presentation we will focus on three...

Oxidation behavior of graphene-coated copper at intrinsic graphene defects of different origins.

Science.gov (United States)

Kwak, Jinsung; Jo, Yongsu; Park, Soon-Dong; Kim, Na Yeon; Kim, Se-Yang; Shin, Hyung-Joon; Lee, Zonghoon; Kim, Sung Youb; Kwon, Soon-Yong

2017-11-16

The development of ultrathin barrier films is vital to the advanced semiconductor industry. Graphene appears to hold promise as a protective coating; however, the polycrystalline and defective nature of engineered graphene hinders its practical applications. Here, we investigate the oxidation behavior of graphene-coated Cu foils at intrinsic graphene defects of different origins. Macro-scale information regarding the spatial distribution and oxidation resistance of various graphene defects is readily obtained using optical and electron microscopies after the hot-plate annealing. The controlled oxidation experiments reveal that the degree of structural deficiency is strongly dependent on the origins of the structural defects, the crystallographic orientations of the underlying Cu grains, the growth conditions of graphene, and the kinetics of the graphene growth. The obtained experimental and theoretical results show that oxygen radicals, decomposed from water molecules in ambient air, are effectively inverted at Stone-Wales defects into the graphene/Cu interface with the assistance of facilitators.

Defects and defect generation in oxide layer of ion implanted silicon-silicon dioxide structures

CERN Document Server

Baraban, A P

2002-01-01

One studies mechanism of generation of defects in Si-SiO sub 2 structure oxide layer as a result of implantation of argon ions with 130 keV energy and 10 sup 1 sup 3 - 3.2 x 10 sup 1 sup 7 cm sup - sup 2 doses. Si-SiO sub 2 structures are produced by thermal oxidation of silicon under 950 deg C temperature. Investigations were based on electroluminescence technique and on measuring of high-frequency volt-farad characteristics. Increase of implantation dose was determined to result in spreading of luminosity centres and in its maximum shifting closer to boundary with silicon. Ion implantation was shown, as well, to result in increase of density of surface states at Si-SiO sub 2 interface. One proposed model of defect generation resulting from Ar ion implantation into Si-SiO sub 2

Behaviour of defective CANDU fuel: fuel oxidation kinetic and thermodynamic modelling

International Nuclear Information System (INIS)

Higgs, J.

2005-01-01

The thermal performance of operating CANDU fuel under defect conditions is affected by the ingress of heavy water into the fuel element. A mechanistic model has been developed to predict the extent of fuel oxidation in defective fuel and its affect on fuel thermal performance. A thermodynamic treatment of such oxidized fuel has been performed as a basis for the boundary conditions in the kinetic model. Both the kinetic and thermodynamic models have been benchmarked against recent experimental work. (author)

Defect Engineering and Interface Phenomena in Tin Oxide

KAUST Repository

Albar, Arwa

2017-04-05

The advance in transparent electronics requires high-performance transparent conducting oxide materials. The microscopic properties of these materials are sensitive to the presence of defects and interfaces and thus fundamental understanding is required for materials engineering. In this thesis, first principles density functional theory is used to investigate the possibility of tuning the structural, electronic and magnetic properties of tin oxide by means of defects and interfaces. Our aim is to reveal unique properties and the parameters to control them as well as to explain the origin of unique phenomena in oxide materials. The stability of native defect in tin monoxide (SnO) under strain is investigated using formation energy calculations. We find that the conductivity (which is controlled by native defects) can be switched from p-type to either n-type or undoped semiconducting by means of applied pressure. We then target inducing magnetism in SnO by 3d transition metal doping. We propose that V doping is efficient to realize spin polarization at high temperature. We discuss different tin oxide interfaces. Metallic states are found to form at the SnO/SnO2 interface with electronic properties that depend on the interface terminations. The origin of these states is explained in terms of charge transfer caused by chemical bonding and band alignment. For the SnO/SnO2 heterostructure, we observe the formation of a two dimensional hole gas at the interface, which is surprising as it cannot be explained by the standard polar catastrophe model. Thus, we propose a charge density discontinuity model to explain our results. The model can be generalized to other polar-polar interfaces. Motivated by technological applications, the electronic and structural properties of the MgO (100)/SnO2 (110) interface are investigated. Depending on the interface termination, we observe the formation of a two dimensional electron gas or spin polarized hole gas. Aiming to identify further

Regularities of radiation defects build up on oxide materials surface; Zakonomernosti nakopleniya radiatsionnykh defektov na poverkhnosti oksidnykh materialov

Energy Technology Data Exchange (ETDEWEB)

Bitenbaev, M I; Polyakov, A I [Fiziko-Tekhnicheskij Inst., Almaty (Kazakhstan); Tuseev, T [Inst. Yadernoj Fiziki, Almaty (Kazakhstan)

2005-07-01

Analysis of experimental data by radiation defects study on different oxide elements (silicon, beryllium, aluminium, rare earth elements) irradiated by the photo-, gamma-, neutron-, alpha- radiation, protons and helium ions show, that gas adsorption process on the surface centers and radiation defects build up in metal oxide correlated between themselves. These processes were described by the equivalent kinetic equations for analysis of radiation defects build up in the different metal oxides. It was revealed in the result of the analysis: number of radiation defects are droningly increasing up to limit value with the treatment temperature growth. Constant of radicals death at ionizing radiation increases as well. Amount of surface defects in different oxides defining absorbing activity of these materials looks as: silicon oxide{yields}beryllium oxide{yields}aluminium oxide. So it was found, that most optimal material for absorbing system preparation is silicon oxide by it power intensity and berylium oxide by it adsorption efficiency.

A method of eliminating the surface defect in low-temperature oxidation powder added UO2 pellet

International Nuclear Information System (INIS)

Yoo, H. S.; Lee, S. J.; Kim, J. I.; Jeon, K. R.; Kim, J. W.

2002-01-01

A study on methods to eliminate surface defect shown in low-temperature oxidation powder added UO 2 pellet has been performed. Powders oxidized at 350 .deg. C for 4 hrs were prepared and mixed with UO 2 powder after crushing them. After being sintered, surfaces of the pellet were inspected both visually and optically. A large number of defects were observed on the surface of the specimens in which low-temperature oxidation powders were directly mixed or master mixed with UO 2 powder while both specimens produced from mixed powders including milled oxidation powders and powders that were milled totally after mixing had clean surfaces. However, optical examination showed considerably large defected pores in the milled oxidation powder added pellet and it was confirmed that the inner defects can be eliminated completely only when milling the entire mixture on UO 2 and low-temperature oxidation powder, but not by crushing only oxidation powder

Defects and oxidation of group-III monochalcogenide monolayers

Science.gov (United States)

Guo, Yu; Zhou, Si; Bai, Yizhen; Zhao, Jijun

2017-09-01

Among various two-dimensional (2D) materials, monolayer group-III monochalcogenides (GaS, GaSe, InS, and InSe) stand out owing to their potential applications in microelectronics and optoelectronics. Devices made of these novel 2D materials are sensitive to environmental gases, especially O2 molecules. To address this critical issue, here we systematically investigate the oxidization behaviors of perfect and defective group-III monochalcogenide monolayers by first-principles calculations. The perfect monolayers show superior oxidation resistance with large barriers of 3.02-3.20 eV for the dissociation and chemisorption of O2 molecules. In contrast, the defective monolayers with single chalcogen vacancy are vulnerable to O2, showing small barriers of only 0.26-0.36 eV for the chemisorption of an O2 molecule. Interestingly, filling an O2 molecule to the chalcogen vacancy of group-III monochalcogenide monolayers could preserve the electronic band structure of the perfect system—the bandgaps are almost intact and the carrier effective masses are only moderately disturbed. On the other hand, the defective monolayers with single vacancies of group-III atoms carry local magnetic moments of 1-2 μB. These results help experimental design and synthesis of group-III monochalcogenides based 2D devices with high performance and stability.

Ultra-thin silicon oxide layers on crystalline silicon wafers: Comparison of advanced oxidation techniques with respect to chemically abrupt SiO{sub 2}/Si interfaces with low defect densities

Energy Technology Data Exchange (ETDEWEB)

Stegemann, Bert, E-mail: bert.stegemann@htw-berlin.de [HTW Berlin - University of Applied Sciences, 12459 Berlin (Germany); Gad, Karim M. [University of Freiburg, Department of Microsystems Engineering - IMTEK, 79110 Freiburg (Germany); Balamou, Patrice [HTW Berlin - University of Applied Sciences, 12459 Berlin (Germany); Helmholtz Center Berlin for Materials and Energy (HZB), 12489 Berlin (Germany); Sixtensson, Daniel [Helmholtz Center Berlin for Materials and Energy (HZB), 12489 Berlin (Germany); Vössing, Daniel; Kasemann, Martin [University of Freiburg, Department of Microsystems Engineering - IMTEK, 79110 Freiburg (Germany); Angermann, Heike [Helmholtz Center Berlin for Materials and Energy (HZB), 12489 Berlin (Germany)

2017-02-15

Highlights: • Fabrication of ultrathin SiO{sub 2} tunnel layers on c-Si. • Correlation of electronic and chemical SiO{sub 2}/Si interface properties revealed by XPS/SPV. • Chemically abrupt SiO{sub 2}/Si interfaces generate less interface defect states considerable. - Abstract: Six advanced oxidation techniques were analyzed, evaluated and compared with respect to the preparation of high-quality ultra-thin oxide layers on crystalline silicon. The resulting electronic and chemical SiO{sub 2}/Si interface properties were determined by a combined x-ray photoemission (XPS) and surface photovoltage (SPV) investigation. Depending on the oxidation technique, chemically abrupt SiO{sub 2}/Si interfaces with low densities of interface states were fabricated on c-Si either at low temperatures, at short times, or in wet-chemical environment, resulting in each case in excellent interface passivation. Moreover, the beneficial effect of a subsequent forming gas annealing (FGA) step for the passivation of the SiO{sub 2}/Si interface of ultra-thin oxide layers has been proven. Chemically abrupt SiO{sub 2}/Si interfaces have been shown to generate less interface defect states.

First-principles study on oxidation effects in uranium oxides and high-pressure high-temperature behavior of point defects in uranium dioxide

Science.gov (United States)

Geng, Hua Y.; Song, Hong X.; Jin, K.; Xiang, S. K.; Wu, Q.

2011-11-01

Formation Gibbs free energy of point defects and oxygen clusters in uranium dioxide at high-pressure high-temperature conditions are calculated from first principles, using the LSDA+U approach for the electronic structure and the Debye model for the lattice vibrations. The phonon contribution on Frenkel pairs is found to be notable, whereas it is negligible for the Schottky defect. Hydrostatic compression changes the formation energies drastically, making defect concentrations depend more sensitively on pressure. Calculations show that, if no oxygen clusters are considered, uranium vacancy becomes predominant in overstoichiometric UO2 with the aid of the contribution from lattice vibrations, while compression favors oxygen defects and suppresses uranium vacancy greatly. At ambient pressure, however, the experimental observation of predominant oxygen defects in this regime can be reproduced only in a form of cuboctahedral clusters, underlining the importance of defect clustering in UO2+x. Making use of the point defect model, an equation of state for nonstoichiometric oxides is established, which is then applied to describe the shock Hugoniot of UO2+x. Furthermore, the oxidization and compression behavior of uranium monoxide, triuranium octoxide, uranium trioxide, and a series of defective UO2 at 0 K are investigated. The evolution of mechanical properties and electronic structures with an increase of the oxidation degree are analyzed, revealing the transition of the ground state of uranium oxides from metallic to Mott insulator and then to charge-transfer insulator due to the interplay of strongly correlated effects of 5f orbitals and the shift of electrons from uranium to oxygen atoms.

Modelling ionising radiation induced defect generation in bipolar oxides with gated diodes

International Nuclear Information System (INIS)

Barnaby, H.J.; Cirba, C.; Schrimpf, R.D.; Kosier, St.; Fouillat, P.; Montagner, X.

1999-01-01

Radiation-induced oxide defects that degrade electrical characteristics of bipolar junction transistor (BJTs) can be measured with the use of gated diodes. The buildup of defects and their effect on device radiation response are modeled with computer simulation. (authors)

Ab-initio modelling of thermodynamics and kinetics of point defects in indium oxide

International Nuclear Information System (INIS)

Agoston, Peter; Klein, Andreas; Albe, Karsten; Erhart, Paul

2008-01-01

The electrical and optical properties of indium oxide films strongly vary with the processing parameters. Especially the oxygen partial pressure and temperature determine properties like electrical conductivity, composition and transparency. Since this material owes its remarkable properties like the intrinsic n-type conductivity to its defect chemistry, it is important to understand both, the equilibrium defect thermodynamics and kinetics of the intrinsic point defects. In this contribution we present a defect model based on DFT total energy calculations using the GGA+U method. Further, the nudged elastic band method is employed in order to obtain a set of migration barriers for each defect species. Due to the complicated crystal structure of indium oxide a Kinetic Monte-Carlo algorithm was implemented, which allows to determine diffusion coefficients. The bulk tracer diffusion constant is predicted as a function of oxygen partial pressure, Fermi level and temperature for the pure material

Point defects and irradiation in oxides: simulations at the atomic scale

International Nuclear Information System (INIS)

Crocombette, J.P.

2005-12-01

The studies done by Jean-Paul Crocombette between 1996 and 2005 in the Service de Recherches de Metallurgie Physique of the Direction de l'Energie Nucleaire in Saclay are presented in this Habilitation thesis. These works were part of the material science researches on the ageing, especially under irradiation, of oxides of interest for the nuclear industry. In this context simulation studies at the atomic scale were performed on two elementary components of ageing under irradiation : point defects and displacement cascades ; using two complementary simulation techniques : ab initio electronic structure calculations and empirical potential molecular dynamics. The first part deals with point defects : self defects (vacancies or interstitials) or hetero-atomic dopants. One first recalls the energetics of such defects in oxides, the specific features of defects calculations and the expected accuracy of these calculations. Then one presents the results obtained on uranium dioxide, oxygen in silver and amorphous silica. The second part tackles the modelling of disintegration recoil nuclei in various?displacement cascades created by crystalline matrices for actinide waste disposal. Cascade calculations give access to the amorphization mechanisms under irradiation of these materials. One thus predicts that the amorphization in zircon takes place directly in the tracks whereas in lanthanum zirconate, the amorphization proceeds through the accumulation of point defects. Finally the prospects of these studies are discussed. (author)

Slow Replication Fork Velocity of Homologous Recombination-Defective Cells Results from Endogenous Oxidative Stress

Science.gov (United States)

Magdalou, Indiana; Machon, Christelle; Dardillac, Elodie; Técher, Hervé; Guitton, Jérôme; Debatisse, Michelle; Lopez, Bernard S.

2016-01-01

Replications forks are routinely hindered by different endogenous stresses. Because homologous recombination plays a pivotal role in the reactivation of arrested replication forks, defects in homologous recombination reveal the initial endogenous stress(es). Homologous recombination-defective cells consistently exhibit a spontaneously reduced replication speed, leading to mitotic extra centrosomes. Here, we identify oxidative stress as a major endogenous source of replication speed deceleration in homologous recombination-defective cells. The treatment of homologous recombination-defective cells with the antioxidant N-acetyl-cysteine or the maintenance of the cells at low O2 levels (3%) rescues both the replication fork speed, as monitored by single-molecule analysis (molecular combing), and the associated mitotic extra centrosome frequency. Reciprocally, the exposure of wild-type cells to H2O2 reduces the replication fork speed and generates mitotic extra centrosomes. Supplying deoxynucleotide precursors to H2O2-exposed cells rescued the replication speed. Remarkably, treatment with N-acetyl-cysteine strongly expanded the nucleotide pool, accounting for the replication speed rescue. Remarkably, homologous recombination-defective cells exhibit a high level of endogenous reactive oxygen species. Consistently, homologous recombination-defective cells accumulate spontaneous γH2AX or XRCC1 foci that are abolished by treatment with N-acetyl-cysteine or maintenance at 3% O2. Finally, oxidative stress stimulated homologous recombination, which is suppressed by supplying deoxynucleotide precursors. Therefore, the cellular redox status strongly impacts genome duplication and transmission. Oxidative stress should generate replication stress through different mechanisms, including DNA damage and nucleotide pool imbalance. These data highlight the intricacy of endogenous replication and oxidative stresses, which are both evoked during tumorigenesis and senescence initiation

Slow Replication Fork Velocity of Homologous Recombination-Defective Cells Results from Endogenous Oxidative Stress.

Directory of Open Access Journals (Sweden)

Therese Wilhelm

2016-05-01

Full Text Available Replications forks are routinely hindered by different endogenous stresses. Because homologous recombination plays a pivotal role in the reactivation of arrested replication forks, defects in homologous recombination reveal the initial endogenous stress(es. Homologous recombination-defective cells consistently exhibit a spontaneously reduced replication speed, leading to mitotic extra centrosomes. Here, we identify oxidative stress as a major endogenous source of replication speed deceleration in homologous recombination-defective cells. The treatment of homologous recombination-defective cells with the antioxidant N-acetyl-cysteine or the maintenance of the cells at low O2 levels (3% rescues both the replication fork speed, as monitored by single-molecule analysis (molecular combing, and the associated mitotic extra centrosome frequency. Reciprocally, the exposure of wild-type cells to H2O2 reduces the replication fork speed and generates mitotic extra centrosomes. Supplying deoxynucleotide precursors to H2O2-exposed cells rescued the replication speed. Remarkably, treatment with N-acetyl-cysteine strongly expanded the nucleotide pool, accounting for the replication speed rescue. Remarkably, homologous recombination-defective cells exhibit a high level of endogenous reactive oxygen species. Consistently, homologous recombination-defective cells accumulate spontaneous γH2AX or XRCC1 foci that are abolished by treatment with N-acetyl-cysteine or maintenance at 3% O2. Finally, oxidative stress stimulated homologous recombination, which is suppressed by supplying deoxynucleotide precursors. Therefore, the cellular redox status strongly impacts genome duplication and transmission. Oxidative stress should generate replication stress through different mechanisms, including DNA damage and nucleotide pool imbalance. These data highlight the intricacy of endogenous replication and oxidative stresses, which are both evoked during tumorigenesis and

Slow Replication Fork Velocity of Homologous Recombination-Defective Cells Results from Endogenous Oxidative Stress.

Science.gov (United States)

Wilhelm, Therese; Ragu, Sandrine; Magdalou, Indiana; Machon, Christelle; Dardillac, Elodie; Técher, Hervé; Guitton, Jérôme; Debatisse, Michelle; Lopez, Bernard S

2016-05-01

Replications forks are routinely hindered by different endogenous stresses. Because homologous recombination plays a pivotal role in the reactivation of arrested replication forks, defects in homologous recombination reveal the initial endogenous stress(es). Homologous recombination-defective cells consistently exhibit a spontaneously reduced replication speed, leading to mitotic extra centrosomes. Here, we identify oxidative stress as a major endogenous source of replication speed deceleration in homologous recombination-defective cells. The treatment of homologous recombination-defective cells with the antioxidant N-acetyl-cysteine or the maintenance of the cells at low O2 levels (3%) rescues both the replication fork speed, as monitored by single-molecule analysis (molecular combing), and the associated mitotic extra centrosome frequency. Reciprocally, the exposure of wild-type cells to H2O2 reduces the replication fork speed and generates mitotic extra centrosomes. Supplying deoxynucleotide precursors to H2O2-exposed cells rescued the replication speed. Remarkably, treatment with N-acetyl-cysteine strongly expanded the nucleotide pool, accounting for the replication speed rescue. Remarkably, homologous recombination-defective cells exhibit a high level of endogenous reactive oxygen species. Consistently, homologous recombination-defective cells accumulate spontaneous γH2AX or XRCC1 foci that are abolished by treatment with N-acetyl-cysteine or maintenance at 3% O2. Finally, oxidative stress stimulated homologous recombination, which is suppressed by supplying deoxynucleotide precursors. Therefore, the cellular redox status strongly impacts genome duplication and transmission. Oxidative stress should generate replication stress through different mechanisms, including DNA damage and nucleotide pool imbalance. These data highlight the intricacy of endogenous replication and oxidative stresses, which are both evoked during tumorigenesis and senescence initiation

Tailoring defect structure and optical absorption of porous anodic aluminum oxide membranes

International Nuclear Information System (INIS)

Yan Hongdan; Lemmens, Peter; Wulferding, Dirk; Shi, Jianmin; Becker, Klaus Dieter; Lin, Chengtian; Lak, Aidin; Schilling, Meinhard

2012-01-01

Defects influence the optical and electronic properties of nanostructured materials that may be relevant for applications. In self-organized anodic aluminum oxide (AAO) templates we have investigated the effect of annealing, doping and nanoscale metal deposition. Optical absorption spectroscopy has been used as a sensitive probe for the defect density in AAO templates. The electronic spectra are found to be dominated by bands which originate from oxygen-deficient color centers (F + , F and F 2 ). In annealing studies, the integrated absorption of the bands changes non-monotonically with annealing temperature and annealing time. This demonstrates that the concentration of defects can be optimized to tailor the optical properties of the AAO. Metallic Au wires are deposited in the template to establish a plasmonic template or array. The investigations provide an interesting insight into the interplay of reactivity and diffusivity on nanoscales. - Highlights: ► Preparation of metal wire arrays in oxide templates with tailored plasmonic properties. ► Oxygen defects are characterized using optical absorption and fluorescence. ► Optical absorption spectra are assigned to energy levels of oxygen vacancies (color centers). ► Annealing and electrodeposition of Au wires minimize defects maintaining the morphology.

Defect-mediated magnetism of transition metal doped zinc oxide thin films

Science.gov (United States)

Roberts, Bradley Kirk

Magnetism in transition metal doped wide band-gap materials is of interest to further the fundamental science of materials and future spintronics applications. Large inter-dopant separations require mediation of ferromagnetism by some method; carrier-mediated mechanisms are typically applicable to dilute magnetic semiconductors with low Curie temperatures. Dilute magnetic oxides, commonly with poor conductivity and TC above room temperature, cannot be described within this theory. Recent experiment and theory developments suggest that ferromagnetic exchange in these materials can be mediated by defects. This research includes experimental results justifying and developing this approach. Thin films of Cr doped ZnO (band gap ˜3.3 eV) were deposited with several processing variations to enhance the effects of either 0-dimensional (vacancy, hydrogen-related defect) or two-dimensional defects (surface/interface) and thereby affect magnetism and conductivity. We observe surface magnetism in dielectric thin films of oxygen-saturated ZnO:Cr with spontaneous magnetic moment and conductance dropping approximately exponentially with increasing thickness. Uniform defect concentrations would not result in such magnetic ordering behavior indicating that magnetism is mediated either by surface defects or differing concentrations of point defects near the surface. Polarized neutron reflectivity profiling confirms a magnetically active region of ˜8 nm at the film surface. Hydrogen is notoriously present as a defect and carrier dopant in ZnO, and artificial introduction of hydrogen in dielectric ZnO:Cr films results in varying electronic and magnetic behavior. Free carriers introduced with hydrogen doping are not spin-polarized requiring an alternative explanation for ferromagnetism. We find from positron annihilation spectroscopy measurements that hydrogen doping increases the concentration of an altered VZn-related defect (a preliminary interpretation) throughout the film, which

Defects and properties of cadmium oxide based transparent conductors

International Nuclear Information System (INIS)

Yu, Kin Man; Detert, D. M.; Dubon, O. D.; Chen, Guibin; Zhu, Wei; Liu, Chaoping; Grankowska, S.; Hsu, L.; Walukiewicz, Wladek

2016-01-01

Transparent conductors play an increasingly important role in a number of semiconductor technologies. This paper reports on the defects and properties of Cadmium Oxide, a transparent conducting oxide which can be potentially used for full spectrum photovoltaics. We carried out a systematic investigation on the effects of defects in CdO thin films undoped and intentionally doped with In and Ga under different deposition and annealing conditions. We found that at low growth temperatures (<200 °C), sputter deposition tends to trap both oxygen vacancies and compensating defects in the CdO film resulting in materials with high electron concentration of ∼2 × 10 20 /cm 3 and mobility in the range of 40–100 cm 2 /V s. Thermal annealing experiments in different ambients revealed that the dominating defects in sputtered CdO films are oxygen vacancies. Oxygen rich CdO films grown by sputtering with increasing O 2 partial pressure in the sputter gas mixture results in films with resistivity from ∼4 × 10 −4 to >1 Ω cm due to incorporation of excess O in the form of O-related acceptor defects, likely to be O interstitials. Intentional doping with In and Ga donors leads to an increase of both the electron concentration and the mobility. With proper doping CdO films with electron concentration of more than 10 21  cm −3 and electron mobility higher than 120 cm 2 /V s can be achieved. Thermal annealing of doped CdO films in N 2 ambient can further improve the electrical properties by removing native acceptors and improving film crystallinity. Furthermore, the unique doping behavior and electrical properties of CdO were explored via simulations based on the amphoteric defect model. A comparison of the calculations and experimental results show that the formation energy of native donors and acceptors at the Fermi stabilization energy is ∼1 eV and that the mobility of sputtered deposited CdO is limited by a background acceptor concentration of

Defects and properties of cadmium oxide based transparent conductors

Energy Technology Data Exchange (ETDEWEB)

Yu, Kin Man, E-mail: kinmanyu@cityu.edu.hk [Department of Physics and Materials Science, City University of Hong Kong, Kowloon (Hong Kong); Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720 (United States); Detert, D. M.; Dubon, O. D. [Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720 (United States); Department of Materials Science and Engineering, University of California, Berkeley, California 94720 (United States); Chen, Guibin [Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720 (United States); Physics Department and Jiangsu Key Laboratory for Chemistry of Low Dimensional Materials, Huaiyin Normal University, Jiangsu 223300 (China); Zhu, Wei [Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720 (United States); Department of Physics and The Center for Physical Experiments, University of Science and Technology of China, Hefei, Anhui 230026 (China); Liu, Chaoping [Department of Physics and Materials Science, City University of Hong Kong, Kowloon (Hong Kong); Grankowska, S. [Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720 (United States); Institute of Experimental Physics (IEP UW), Warsaw University, Warsaw (Poland); Hsu, L. [Department of Postsecondary Teaching and Learning, University of Minnesota, Minneapolis, Minnesota 55455 (United States); Walukiewicz, Wladek [Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720 (United States)

2016-05-14

Transparent conductors play an increasingly important role in a number of semiconductor technologies. This paper reports on the defects and properties of Cadmium Oxide, a transparent conducting oxide which can be potentially used for full spectrum photovoltaics. We carried out a systematic investigation on the effects of defects in CdO thin films undoped and intentionally doped with In and Ga under different deposition and annealing conditions. We found that at low growth temperatures (<200 °C), sputter deposition tends to trap both oxygen vacancies and compensating defects in the CdO film resulting in materials with high electron concentration of ∼2 × 10{sup 20}/cm{sup 3} and mobility in the range of 40–100 cm{sup 2}/V s. Thermal annealing experiments in different ambients revealed that the dominating defects in sputtered CdO films are oxygen vacancies. Oxygen rich CdO films grown by sputtering with increasing O{sub 2} partial pressure in the sputter gas mixture results in films with resistivity from ∼4 × 10{sup −4} to >1 Ω cm due to incorporation of excess O in the form of O-related acceptor defects, likely to be O interstitials. Intentional doping with In and Ga donors leads to an increase of both the electron concentration and the mobility. With proper doping CdO films with electron concentration of more than 10{sup 21 }cm{sup −3} and electron mobility higher than 120 cm{sup 2}/V s can be achieved. Thermal annealing of doped CdO films in N{sub 2} ambient can further improve the electrical properties by removing native acceptors and improving film crystallinity. Furthermore, the unique doping behavior and electrical properties of CdO were explored via simulations based on the amphoteric defect model. A comparison of the calculations and experimental results show that the formation energy of native donors and acceptors at the Fermi stabilization energy is ∼1 eV and that the mobility of sputtered deposited CdO is limited

Defects in Amorphous Semiconductors: The Case of Amorphous Indium Gallium Zinc Oxide

Science.gov (United States)

de Jamblinne de Meux, A.; Pourtois, G.; Genoe, J.; Heremans, P.

2018-05-01

Based on a rational classification of defects in amorphous materials, we propose a simplified model to describe intrinsic defects and hydrogen impurities in amorphous indium gallium zinc oxide (a -IGZO). The proposed approach consists of organizing defects into two categories: point defects, generating structural anomalies such as metal—metal or oxygen—oxygen bonds, and defects emerging from changes in the material stoichiometry, such as vacancies and interstitial atoms. Based on first-principles simulations, it is argued that the defects originating from the second group always act as perfect donors or perfect acceptors. This classification simplifies and rationalizes the nature of defects in amorphous phases. In a -IGZO, the most important point defects are metal—metal bonds (or small metal clusters) and peroxides (O - O single bonds). Electrons are captured by metal—metal bonds and released by the formation of peroxides. The presence of hydrogen can lead to two additional types of defects: metal-hydrogen defects, acting as acceptors, and oxygen-hydrogen defects, acting as donors. The impact of these defects is linked to different instabilities observed in a -IGZO. Specifically, the diffusion of hydrogen and oxygen is connected to positive- and negative-bias stresses, while negative-bias illumination stress originates from the formation of peroxides.

Are Soft Short Tests Good Indicators of Internal Li-ion Cell Defects?

Science.gov (United States)

Jeevarajan, J.; Chung, J.-S.; Jung, K.; Park, J.

2013-01-01

The self discharge test at full state of charge, may not be a good one to detect subtle defects since the li-ion chemistry has the highest self discharge at full state of charge. One should characterize self discharge versus storage time for each cell manufacturer/design to differentiate between normal self discharge and that due to a subtle manufacturing defect. The various soft short test methods indicate that if this test is carried out at full discharge (0% SOC) with all capacity removed (by lowering the current load in a stepwise manner to the same end of discharge voltage), then the cells need to be placed in storage for more than 72 hours to get a good analysis on the presence of subtle defects since it takes more than 72 hours to achieve voltage stabilization. If the cells are to be charged up even to a small percentage (ex. 1%), 72 hours are sufficient to determine issues. However, the pass/fail criteria should be based on a valid OCV decline. Less than 10 mV voltage decline is not a good method to detect subtle defects. As mentioned in the first bullet, self discharge is a competing reaction when a charge is introduced and hence a characterization of the self discharge versus storage time is required to fully correlate voltage decline to a failure due to a subtle defect. Soft short test method cannot be relied on for defect detection because cells with and without voltage decline seemed to have similar defects and characteristics. Screening methods such as internal resistance and capacity as well as a 3-sigma range for OCV, mass and dimensions should be used to screen out outliers. A very critical aspect in the understanding of subtle defects is to carry out destructive analysis of cells from every lot to confirm the quality of production and screen all cells and batteries in a stringent manner to have a high quality set of flight cells. Self Discharge Test: Fully charged cells shall be placed in Open circuit stand for 72 hours (OCV measurement twice a

Thermodynamic and kinetic modelling of fuel oxidation behaviour in operating defective fuel

International Nuclear Information System (INIS)

Lewis, B.J.; Thompson, W.T.; Akbari, F.; Thompson, D.M.; Thurgood, C.; Higgs, J.

2004-01-01

A theoretical treatment has been developed to predict the fuel oxidation behaviour in operating defective nuclear fuel elements. The equilibrium stoichiometry deviation in the hyper-stoichiometric fuel has been derived from thermodynamic considerations using a self-consistent set of thermodynamic properties for the U-O system, which emphasizes replication of solubilities and three-phase invariant conditions displayed in the U-O binary phase diagram. The kinetics model accounts for multi-phase transport including interstitial oxygen diffusion in the solid and gas-phase transport of hydrogen and steam in the fuel cracks. The fuel oxidation model is further coupled to a heat conduction model to account for the feedback effect of a reduced thermal conductivity in the hyper-stoichiometric fuel. A numerical solution has been developed using a finite-element technique with the FEMLAB software package. The model has been compared to available data from several in-reactor X-2 loop experiments with defective fuel conducted at the Chalk River Laboratories. The model has also been benchmarked against an O/U profile measurement for a spent defective fuel element discharged from a commercial reactor

Proceedings of the European Meeting on Positron Studies of Defects

International Nuclear Information System (INIS)

1987-01-01

The meeting dealt with both theoretical and experimental aspects of positron studies of defects using conventional and novel positron techniques. The subjects are indicated in the following headings: (1) theory of positrons in imperfect solids, (2) vacancies in metals and alloys, (3) dislocation and deformation effects, (4) amorphous alloys and fine-grained materials, (5) phase transitions, (6) precipitation phenomena, (7) gas impurity-defect interaction and irradiation effects, (8) defects in elemental semiconductors, (9) defects in compound semiconductors, (10) slow positron studies of defects, (11) defects in oxides and halides, (12) defects in molecular solids, and (13) advances in experimental techniques and data treatment. Althogether 141 contributions (invited plenary lectures, short lectures, and posters) are presented as titles with abstracts. Most of them are in INIS scope and are processed individually for the database

Radiation-Induced Short Channel (RISCE) and Narrow Channel (RINCE) Effects in 65 and 130 nm MOSFETs

CERN Document Server

Faccio, F; Cornale, D; Paccagnella, A; Gerardin, S

2015-01-01

The behavior of transistors in commercial-grade complementary metal-oxide semiconductor technologies in the 65 and 130 nm nodes has been explored up to a total ionizing dose of 1 Grad. The large dose tolerance of the thin gate oxide is confirmed, but defects in the spacer and STI oxides have a strong effect on the performance of the transistors. A radiation-induced short channel effect is traced to charge trapping in the spacers used for drain engineering, while a radiation-induced narrow channel effect is due to defect generation in the lateral isolation oxide (STI). These strongly degrade the electrical characteristics of short and narrow channel transistors at high doses, and their magnitude depends on the applied bias and temperature during irradiation in a complex way.

Positron trapping at defects in copper oxide superconductors

International Nuclear Information System (INIS)

McMullen, T.; Jena, P.; Khanna, S.N.; Li, Y.; Jensen, K.O.

1991-01-01

Positron states and lifetimes at defects in the copper oxide superconductors La 2-x Sr x CuO 4 , YBa 2 Cu 3 O 7-x , and Bi 2 Sr 2 CaCu 2 O 8+x are calculated with use of the superposed-atom model. In the Bi 2 Sr 2 CaCu 2 O 8+x compound, we find that the smaller metal-ion vacancies appear to only bind positrons weakly, while missing oxygens do not trap positrons. In contrast, metal-ion vacancies in La 2-x Sr x CuO 4 and YBa 2 Cu 3 O 7-x bind positrons by ∼1 eV, and oxygen-related defects appear to be the weak-binding sites in these materials. The sites that bind positrons only weakly, by energies ∼k BT , are of particular interest in view of the complex temperature dependences of the annihilation characteristics that are observed in these materials

Role of Defects and Adsorbed Water Film in Influencing the Electrical, Optical and Catalytic Properties of Transition Metal Oxides

Science.gov (United States)

Wang, Qi

Transition metal oxides (TMOs) constitute a large group of materials that exhibit a wide range of optical, electrical, electrochemical, dielectric and catalytic properties, and thus making them highly regarded as promising materials for a variety of applications in next generation electronic, optoelectronic, catalytic, photonic, energy storage and energy conversion devices. Some of the unique properties of TMOs are their strong electron-electron correlations that exists between the valence electrons of narrow d- or f-shells and their ability to exist in variety of oxidation states. This gives TMOs an enormous range of fascinating electronic and other physical properties. Many of these remarkable properties of TMOs arises from the complex surface charge transfer processes at the oxide surface/electrochemical redox species interface and non-stoichiometry due to the presence of lattice vacancies that may cause significant perturbation to the electronic structure of the material. Stoichiometry, oxidation state of the metal center and lattice vacancy defects all play important roles in affecting the physical properties, electronic structures, device behavior and other functional properties of TMOs. However, the underlying relationships between them is not clearly known. For instance, the exchange of electrons between adsorbates and defects can lead to the passivation of existing defect states or formation of new defects, both of which affect defect equilibria, and consequently, functional properties. In depth understanding of the role of lattice defects on the electrical, catalytic and optical properties of TMOs is central to further expansion of the technological applications of TMO based devices. The focus of this work is to elucidate the interactions of vacancy defects with various electrochemical adsorbates in TMOs. The ability to directly probe the interactions of vacancy defects with gas and liquid phase species under in-operando conditions is highly desirable to

Defective TiO2 with oxygen vacancies: synthesis, properties and photocatalytic applications

Science.gov (United States)

Pan, Xiaoyang; Yang, Min-Quan; Fu, Xianzhi; Zhang, Nan; Xu, Yi-Jun

2013-04-01

Titanium dioxide (TiO2), as an important semiconductor metal oxide, has been widely investigated in the field of photocatalysis. The properties of TiO2, including its light absorption, charge transport and surface adsorption, are closely related to its defect disorder, which in turn plays a significant role in the photocatalytic performance of TiO2. Among all the defects identified in TiO2, oxygen vacancy is one of the most important and is supposed to be the prevalent defect in many metal oxides, which has been widely investigated both by theoretical calculations and experimental characterizations. Here, we give a short review on the existing strategies for the synthesis of defective TiO2 with oxygen vacancies, and the defect related properties of TiO2 including structural, electronic, optical, dissociative adsorption and reductive properties, which are intimately related to the photocatalytic performance of TiO2. In particular, photocatalytic applications with regard to defective TiO2 are outlined. In addition, we offer some perspectives on the challenge and new direction for future research in this field. We hope that this tutorial minireview would provide some useful contribution to the future design and fabrication of defective semiconductor-based nanomaterials for diverse photocatalytic applications.Titanium dioxide (TiO2), as an important semiconductor metal oxide, has been widely investigated in the field of photocatalysis. The properties of TiO2, including its light absorption, charge transport and surface adsorption, are closely related to its defect disorder, which in turn plays a significant role in the photocatalytic performance of TiO2. Among all the defects identified in TiO2, oxygen vacancy is one of the most important and is supposed to be the prevalent defect in many metal oxides, which has been widely investigated both by theoretical calculations and experimental characterizations. Here, we give a short review on the existing strategies for the

Band alignment and defects of the diamond zinc oxide heterojunction; Bandstruktur und Defekte der Diamant-Zinkoxid-Heterostruktur

Energy Technology Data Exchange (ETDEWEB)

Geithner, Peter

2008-09-12

Zinc oxide films were grown on diamond single crystals by rf sputtering of zinc oxide. The valence and conduction band offset was determined by photoelectron spectroscopy. A deep defect occurring in the zinc oxide films on diamond was characterized by cathodoluminescence spectroscopy. (orig.)

The influence of initial defects on mechanical stress and deformation distribution in oxidized silicon

Directory of Open Access Journals (Sweden)

Kulinich O. A.

2008-10-01

Full Text Available The near-surface silicon layers in silicon – dioxide silicon systems with modern methods of research are investigated. It is shown that these layers have compound structure and their parameters depend on oxidation and initial silicon parameters. It is shown the influence of initial defects on mechanical stress and deformation distribution in oxidized silicon.

Positron annihilation study of defects in electron-irradiated single crystal zinc oxide

Science.gov (United States)

To, C. K.; Yang, B.; Beling, C. D.; Fung, S.; Ling, C. C.; Gong, M.

2011-01-01

Pressurized melt grown zinc oxide (ZnO) single crystals purchased from Cermet Inc. were irradiated by 2MeV electrons with fluence of 6x1017cm-2. Isochronal annealing from 100°C-800°C was performed on the crystals under argon and air ambience. Variable Energy Doppler Broadening Spectroscopy (VEDBS) was carried out on both the as-grown and the irradiated samples at each annealing step. The migration, agglomeration and annealing of grown-in and irradiated-introduced defects were studied. It was observed that the grown-in vacancy-type defects concentration decreased at 300°C and 600 °C. For the irradiated sample annealed in argon, the positron trapping vacancy-type defect concentration decreased at 300°C and 600°C. Further annealing the as-grown and irradiated samples in argon increased the S parameter further. For the irradiated sample annealed in air, the vacancy-type defect concentration decreases at 300°C and 700°C.

Positron annihilation study of defects in electron-irradiated single crystal zinc oxide

Energy Technology Data Exchange (ETDEWEB)

To, C K; Yang, B; Beling, C D; Fung, S; Ling, C C [Department of Physics, University of Hong Kong (Hong Kong); Gong, M, E-mail: sfung@hkucc.hku.h, E-mail: edwardto04@yahoo.com.h [Department of Physics, Sichuan University, Chengdu (China)

2011-01-01

Pressurized melt grown zinc oxide (ZnO) single crystals purchased from Cermet Inc. were irradiated by 2 MeV electrons with fluence of 6x10{sup 17}cm{sup -2}. Isochronal annealing from 100 deg. C - 800 deg. C was performed on the crystals under argon and air ambience. Variable Energy Doppler Broadening Spectroscopy (VEDBS) was carried out on both the as-grown and the irradiated samples at each annealing step. The migration, agglomeration and annealing of grown-in and irradiated-introduced defects were studied. It was observed that the grown-in vacancy-type defects concentration decreased at 300 deg. C and 600 deg. C. For the irradiated sample annealed in argon, the positron trapping vacancy-type defect concentration decreased at 300 deg. C and 600 deg. C. Further annealing the as-grown and irradiated samples in argon increased the S parameter further. For the irradiated sample annealed in air, the vacancy-type defect concentration decreases at 300 deg. C and 700 deg. C.

Positron annihilation study of defects in electron-irradiated single crystal zinc oxide

International Nuclear Information System (INIS)

To, C K; Yang, B; Beling, C D; Fung, S; Ling, C C; Gong, M

2011-01-01

Pressurized melt grown zinc oxide (ZnO) single crystals purchased from Cermet Inc. were irradiated by 2 MeV electrons with fluence of 6x10 17 cm -2 . Isochronal annealing from 100 deg. C - 800 deg. C was performed on the crystals under argon and air ambience. Variable Energy Doppler Broadening Spectroscopy (VEDBS) was carried out on both the as-grown and the irradiated samples at each annealing step. The migration, agglomeration and annealing of grown-in and irradiated-introduced defects were studied. It was observed that the grown-in vacancy-type defects concentration decreased at 300 deg. C and 600 deg. C. For the irradiated sample annealed in argon, the positron trapping vacancy-type defect concentration decreased at 300 deg. C and 600 deg. C. Further annealing the as-grown and irradiated samples in argon increased the S parameter further. For the irradiated sample annealed in air, the vacancy-type defect concentration decreases at 300 deg. C and 700 deg. C.

Influence of defects on the ordering degree of nanopores made from anodic aluminum oxide

International Nuclear Information System (INIS)

Yu Wenhui; Fei Guangtao; Chen Xiaomeng; Xue Fanghong; Xu Xijin

2006-01-01

Anodic aluminum oxide (AAO) templates with highly ordered nanoporous structure were fabricated by means of the electrochemical anodization under the constant anodic voltage and electrolyte temperature. The dependence of the ordering degree of nanopores on the point defects, dislocation configuration and grain boundary of aluminum is qualitatively analyzed. Experiment results show that the size of the ordered region of nanopores depends strongly on the point defects, dislocation cell configuration

Anatase titanium dioxide nanoparticles in mice: evidence for induced structural and functional sperm defects after short-, but not long-, term exposure

Directory of Open Access Journals (Sweden)

Michelle A Smith

2015-04-01

Full Text Available Titanium dioxide (TiO 2 nanoparticles (TNPs are widely used commercially and exist in a variety of products. To determine if anatase TNPs (ATNPs in doses smaller than previously used reach the scrotum after entry in the body at a distant location and induce sperm defects, 100% ATNP (2.5 or 5 mg kg−1 body weight was administered intraperitoneally to adult males for three consecutive days, followed by sacrifice 1, 2, 3, or 5 weeks later (long- or 24, 48 or 120 h (short-term exposure. Transmission electron microscopy revealed the presence of ANTP in scrotal adipose tissues collected 120 h postinjection when cytokine evaluation showed an inflammatory response in epididymal tissues and fluid. At 120 h and up to 3 weeks postinjection, testicular histology revealed enlarged interstitial spaces. Significantly increased numbers of terminal deoxyribonucleotidyl transferase-mediated dUTP nick-end labeling-positive (apoptotic germ (P = 0.002 and interstitial space cells (P = 0.04 were detected in treated males. Caudal epididymal sperm from the short-term, but not a long-term, arm showed significantly (P < 0.001 increased frequencies of flagellar abnormalities, excess residual cytoplasm (ERC, and unreacted acrosomes in treated versus controls (dose-response relationship. A novel correlation between ERC and unreacted acrosomes was uncovered. At 120 h, there were significant decreases in hyperactivated motility (P < 0.001 and mitochondrial membrane potential (P < 0.05, and increased reactive oxygen species levels (P < 0.00001 in treated versus control sperm. These results indicate that at 4-8 days postinjection, ANTP induce structural and functional sperm defects associated with infertility, and DNA damage via oxidative stress. Sperm defects were transient as they were not detected 10 days to 5 weeks postinjection.

Anatase titanium dioxide nanoparticles in mice: evidence for induced structural and functional sperm defects after short-, but not long-, term exposure

Science.gov (United States)

Smith, Michelle A; Michael, Rowan; Aravindan, Rolands G; Dash, Soma; Shah, Syed I; Galileo, Deni S; Martin-DeLeon, Patricia A

2015-01-01

Titanium dioxide (TiO2) nanoparticles (TNPs) are widely used commercially and exist in a variety of products. To determine if anatase TNPs (ATNPs) in doses smaller than previously used reach the scrotum after entry in the body at a distant location and induce sperm defects, 100% ATNP (2.5 or 5 mg kg−1 body weight) was administered intraperitoneally to adult males for three consecutive days, followed by sacrifice 1, 2, 3, or 5 weeks later (long-) or 24, 48 or 120 h (short-term exposure). Transmission electron microscopy revealed the presence of ANTP in scrotal adipose tissues collected 120 h postinjection when cytokine evaluation showed an inflammatory response in epididymal tissues and fluid. At 120 h and up to 3 weeks postinjection, testicular histology revealed enlarged interstitial spaces. Significantly increased numbers of terminal deoxyribonucleotidyl transferase-mediated dUTP nick-end labeling-positive (apoptotic) germ (P = 0.002) and interstitial space cells (P = 0.04) were detected in treated males. Caudal epididymal sperm from the short-term, but not a long-term, arm showed significantly (P < 0.001) increased frequencies of flagellar abnormalities, excess residual cytoplasm (ERC), and unreacted acrosomes in treated versus controls (dose-response relationship). A novel correlation between ERC and unreacted acrosomes was uncovered. At 120 h, there were significant decreases in hyperactivated motility (P < 0.001) and mitochondrial membrane potential (P < 0.05), and increased reactive oxygen species levels (P < 0.00001) in treated versus control sperm. These results indicate that at 4–8 days postinjection, ANTP induce structural and functional sperm defects associated with infertility, and DNA damage via oxidative stress. Sperm defects were transient as they were not detected 10 days to 5 weeks postinjection. PMID:25370207

Point defects and irradiation in oxides: simulations at the atomic scale

International Nuclear Information System (INIS)

Crocombette, J.P.

2005-11-01

The author gives an overview of his research activity since 1995. This activity concerns research in materials science, and more particularly the ageing of oxides present in the nuclear industry, or more generally, the evolution of these materials under irradiation. The first part deals with the investigation of point defects, and more particularly of the structures and energies of these defects. The author discusses results obtained on uranium dioxide, on amorphous silica, and on the solution of oxygen in silver. The second part deals with irradiation-induced damages in crystalline matrices storing radioactive actinides, and more particularly with the effect of alpha disintegration decay nuclei which are the main sources of long term irradiation in these materials

Evaluation of oxidative status in short-term exercises of adolescent athletes

Directory of Open Access Journals (Sweden)

K Karacabey

2010-09-01

Full Text Available The aim of the study was to evaluate the effects of short-term exercise on total antioxidant status (TAS, lipid hydroperoxide (LOOHs, total oxidative status (TOS and oxidative stress index (OSI in adolescent athletes. A total of 62 adolescent participated in the study. Athletes were trained regularly 3 days a week for 2 hours. All subjects followed a circuit exercise program. Blood samples were collected just before and immediately after the exercise program. Antioxidant status was evaluated by measuring the TAS level in the plasma. Oxidative status was evaluated by measuring the total peroxide level. The percentage ratio of TAS to total peroxide level was accepted as the OSI. Plasma triglyceride, total cholesterol, LDL, HDL and VLDL were measured by automated chemical analyzer using commercially available kits.There was a significant increase in TOS (p<0.05 and OSI (p<0.01 levels and a significant decrease in TAS levels (p<0.01 compared to the resting state. There were no significant changes in LOOHs levels before and after the short-term exercise. After short-term exercise, the balance between oxidative stress and antioxidant status moves towards oxidative stress as a result of increasing oxidants and decreasing antioxidants.

Radiation induced defects and thermoluminescence mechanism in aluminum oxide

Energy Technology Data Exchange (ETDEWEB)

Atobe, K.; Kobayashi, T.; Awata, T. [Naruto Univ. of Education, Tokushima (Japan); Okada, M. [Kyoto Univ., Kumatori, Osaka (Japan). Research Reactor Inst; Nakagawa, M. [Kagawa Univ., Faculty of Education, Takamatsu, Kagawa (Japan)

2001-01-01

The thermoluminescence of the irradiated aluminum oxides were measured to study the radiation induced defects and their behaviors. Neutron and {gamma}-ray irradiation were performed for a shingle crystal of the high purity aluminum oxide. The thermoluminescence glow curve and its activation energy were measured. The spectroscopy measurement on the thermoluminescence and the absorption are also carried out. The observed 430 and 340 nm peaks are discussed relating to the F{sup +} and F centers, respectively. Activation state of the F center transits to 3P state through 1P state by emitting phonons. Trapped electron on 3P state emits phonon of 2.9 eV (430 nm) during transition to the ground state. The above reaction can be written by the equation. F{sup +} + e {yields} (F){sup *} {yields} F + h{nu}(2.9 eV, 470 nm). (Katsuta, H.)

A novel method for surface defect inspection of optic cable with short-wave infrared illuminance

Science.gov (United States)

Chen, Xiaohong; Liu, Ning; You, Bo; Xiao, Bin

2016-07-01

Intelligent on-line detection of cable quality is a crucial issue in optic cable factory, and defects on the surface of optic cable can dramatically depress cable grade. Manual inspection in optic cable quality cannot catch up with the development of optic cable industry due to its low detection efficiency and huge human cost. Therefore, real-time is highly demanded by industry in order to replace the subjective and repetitive process of manual inspection. For this reason, automatic cable defect inspection has been a trend. In this paper, a novel method for surface defect inspection of optic cable with short-wave infrared illuminance is presented. The special condition of short-wave infrared cannot only provide illumination compensation for the weak illumination environment, but also can avoid the problem of exposure when using visible light illuminance, which affects the accuracy of inspection algorithm. A series of image processing algorithms are set up to analyze cable image for the verification of real-time and veracity of the detection method. Unlike some existing detection algorithms which concentrate on the characteristics of defects with an active search way, the proposed method removes the non-defective areas of the image passively at the same time of image processing, which reduces a large amount of computation. OTSU algorithm is used to convert the gray image to the binary image. Furthermore, a threshold window is designed to eliminate the fake defects, and the threshold represents the considered minimum size of defects ε . Besides, a new regional suppression method is proposed to deal with the edge burrs of the cable, which shows the superior performance compared with that of Open-Close operation of mathematical morphological in the boundary processing. Experimental results of 10,000 samples show that the rates of miss detection and false detection are 2.35% and 0.78% respectively when ε equals to 0.5 mm, and the average processing period of one frame

Synthesis and structural characterization of defect spinels in the Lithium-Manganese-Oxide system

CSIR Research Space (South Africa)

Thackeray, MM

1993-10-01

Full Text Available Lithium-manganese-oxides prepared at moderate temperatures are under investigation as insertion electrodes for rechargeable lithium batteries. The structures of two defect-spinel compounds synthesised by the reaction of MnCO3 and Li2CO3 at 400...

Synthesis and structural characterization of defect spinels in the lithium-manganese-oxide system

CSIR Research Space (South Africa)

Thackeray, MM

1993-10-01

Full Text Available Lithium-manganese-oxides prepared at moderate temperatures are under investigation as insertion electrodes for rechargeable lithium batteries. The structures of two defect-spinel compounds synthesized by the reaction of MnCO3 and Li2CO3 at 400°C...

Electron-spin-resonance study of radiation-induced paramagnetic defects in oxides grown on (100) silicon substrates

International Nuclear Information System (INIS)

Kim, Y.Y.; Lenahan, P.M.

1988-01-01

We have used electron-spin resonance to investigate radiation-induced point defects in Si/SiO 2 structures with (100) silicon substrates. We find that the radiation-induced point defects are quite similar to defects generated in Si/SiO 2 structures grown on (111) silicon substrates. In both cases, an oxygen-deficient silicon center, the E' defect, appears to be responsible for trapped positive charge. In both cases trivalent silicon (P/sub b/ centers) defects are primarily responsible for radiation-induced interface states. In earlier electron-spin-resonance studies of unirradiated (100) substrate capacitors two types of P/sub b/ centers were observed; in oxides prepared in three different ways only one of these centers, the P/sub b/ 0 defect, is generated in large numbers by ionizing radiation

Identification of vacancy defect complexes in transparent semiconducting oxides ZnO, In2O3 and SnO2

International Nuclear Information System (INIS)

Makkonen, Ilja; Korhonen, Esa; Prozheeva, Vera; Tuomisto, Filip

2016-01-01

Positron annihilation spectroscopy, when combined with supporting high-quality modeling of positron states and annihilation in matter, is a powerful tool for detailed defect identification of vacancy-type defects in semiconductors and oxides. Here we demonstrate that the Doppler broadening of the positron annihilation radiation is a very sensitive means for observing the oxygen environment around cation vacancies, the main open-volume defects trapping positrons in measurements made for transparent semiconducting oxides. Changes in the positron annihilation signal due to external manipulation such as irradiation and annealing can be correlated with the associated changes in the sizes of the detected vacancy clusters. Our examples for ZnO, In 2 O 3 and SnO 2 demonstrate that oxygen vacancies in oxides can be detected directly using positron annihilation spectroscopy when they are complexed with cation vacancies. (paper)

Identification of vacancy defect complexes in transparent semiconducting oxides ZnO, In2O3 and SnO2

Science.gov (United States)

Makkonen, Ilja; Korhonen, Esa; Prozheeva, Vera; Tuomisto, Filip

2016-06-01

Positron annihilation spectroscopy, when combined with supporting high-quality modeling of positron states and annihilation in matter, is a powerful tool for detailed defect identification of vacancy-type defects in semiconductors and oxides. Here we demonstrate that the Doppler broadening of the positron annihilation radiation is a very sensitive means for observing the oxygen environment around cation vacancies, the main open-volume defects trapping positrons in measurements made for transparent semiconducting oxides. Changes in the positron annihilation signal due to external manipulation such as irradiation and annealing can be correlated with the associated changes in the sizes of the detected vacancy clusters. Our examples for ZnO, In2O3 and SnO2 demonstrate that oxygen vacancies in oxides can be detected directly using positron annihilation spectroscopy when they are complexed with cation vacancies.

Study of defects and vacancies in structural properties of Mn, co-doped oxides: ZnO

Science.gov (United States)

Kumar, Harish; Kaushik, A.; Alvi, P. A.; Dalela, B.; Dalela, S.

2018-05-01

The paper deals with the Structural properties on Mn, Co doped oxides ZnO samples using XRD, Positron Annihilation Lifetime (PAL) Spectra and Raman Spectra. The Mn, Co doped ZnO samples crystallize in a wurtzite structure without any impurity phases in XRD Spectra. The defect state of these samples has been investigated by using positron annihilation lifetime (PAL) spectroscopy technique in which all the relevant lifetime parameters are measured for all the spectra. The results are explained in the direction of doping concentration in these samples in terms of defects structure on Zn lattice site VZn and oxygen defects Vo.

Defect modelling

International Nuclear Information System (INIS)

Norgett, M.J.

1980-01-01

Calculations, drawing principally on developments at AERE Harwell, of the relaxation about lattice defects are reviewed with emphasis on the techniques required for such calculations. The principles of defect modelling are outlined and various programs developed for defect simulations are discussed. Particular calculations for metals, ionic crystals and oxides, are considered. (UK)

Fuel cracking in relation to fuel oxidation in support of an out-reactor instrumented defected fuel experiment

Energy Technology Data Exchange (ETDEWEB)

Quastel, A.; Thiriet, C. [Atomic Energy of Canada Limited, Chalk River, ON (Canada); Lewis, B., E-mail: brent.lewis@uoit.ca [Univ. of Ontario Inst. of Tech., Oshawa, ON (Canada); Corcoran, E., E-mail: emily.corcoran@rmc.ca [Royal Military College of Canada, Kingston, ON (Canada)

2014-07-01

An experimental program funded by the CANDU Owners Group (COG) is studying an out-reactor instrumented defected fuel experiment in Stern Laboratories (Hamilton, Ontario) with guidance from Atomic Energy of Canada Limited (AECL). The objective of this test is to provide experimental data for validation of a mechanistic fuel oxidation model. In this experiment a defected fuel element with UO{sub 2} pellets will be internally heated with an electrical heater element, causing the fuel to crack. By defecting the sheath in-situ the fuel will be exposed to light water coolant near normal reactor operating conditions (pressure 10 MPa and temperature 265-310{sup o}C) causing fuel oxidation, especially near the hotter regions of the fuel in the cracks. The fuel thermal conductivity will change, resulting in a change in the temperature distribution of the fuel element. This paper provides 2D r-θ plane strain solid mechanics models to simulate fuel thermal expansion, where conditions for fuel crack propagation are investigated with the thermal J integral to predict fuel crack stress intensity factors. Finally since fuel crack geometry can affect fuel oxidation this paper shows that the solid mechanics model with pre-set radial cracks can be coupled to a 2D r-θ fuel oxidation model. (author)

2-ethylhydracrylic aciduria in short/branched-chain acyl-CoA dehydrogenase deficiency

DEFF Research Database (Denmark)

Korman, Stanley H; Andresen, Brage S; Zeharia, Avraham

2005-01-01

BACKGROUND: Isolated excretion of 2-methylbutyrylglycine (2-MBG) is the hallmark of short/branched-chain acyl-CoA dehydrogenase deficiency (SBCADD), a recently identified defect in the proximal pathway of L-isoleucine oxidation. SBCADD might be underdiagnosed because detection and recognition...

Study of defect generated visible photoluminescence in zinc oxide nano-particles prepared using PVA templates

Energy Technology Data Exchange (ETDEWEB)

Oudhia, A. [Department of Physics, Government V.Y.T. PG. Autonomous College, Durg, 491001 C.G. (India); Choudhary, A., E-mail: aarti.bhilai@gmail.com [Department of Physics, Government V.Y.T. PG. Autonomous College, Durg, 491001 C.G. (India); Sharma, S.; Aggrawal, S. [Department of Physics, Government V.Y.T. PG. Autonomous College, Durg, 491001 C.G. (India); Dhoble, S.J. [RTM University Nagpur, Maharashtra (India)

2014-10-15

Intrinsic defect generated photoluminescence (PL) in zinc oxide nanoparticles (NPs) obtained by a PVA template based wet-chemical process has been studied. A good controllability was achieved on the surface defects, structure and the morphology of ZnO NPs through the variation of solvents used in synthesis. The PL emission strongly depended on the defect structure and morphology. SEM, XRD, annealing and PL excitation studies were used to analyze the types of defects involved in the visible emission as well as the defect concentration. The mechanism for the blue, green and yellow emissions was proposed. The spectral content of the visible emission was controlled through generation/removal of defects through the shape transformation or annealing by focusing on defect origins and broad controls. - Highlights: • ZnO nanoparticles were synthesized using poly-vinyl alcohol template in various solvents. • The structure and morphology of ZnO nanoparticles were depended on dielectric constant and boiling point of solvents. • Photoluminescence properties of ZnO nanoparticles were studied. • Maximum optical absorbance and Photoluminescence intensity were found in ethanolic preparation. • ZnO nanoparticles were annealed at different temperatures for detection of defect emission.

Defect physics vis-à-vis electrochemical performance in layered mixed-metal oxide cathode materials

Science.gov (United States)

Hoang, Khang; Johannes, Michelle

Layered mixed-metal oxides with different compositions of (Ni,Co,Mn) [NCM] or (Ni,Co,Al) [NCA] have been used in commercial lithium-ion batteries. Yet their defect physics and chemistry is still not well understood, despite having important implications for the electrochemical performance. In this presentation, we report a hybrid density functional study of intrinsic point defects in the compositions LiNi1/3Co1/3Mn1/3O2 (NCM1/3) and LiNi1/3Co1/3Al1/3O2 (NCA1/3) which can also be regarded as model compounds for NCM and NCA. We will discuss defect landscapes in NCM1/3 and NCA1/3 under relevant synthesis conditions with a focus on the formation of metal antisite defects and its implications on the electrochemical properties and ultimately the design of NCM and NCA cathode materials.

Diagnosis of Soft Spot Short Defects in Analog Circuits Considering the Thermal Behaviour of the Chip

Directory of Open Access Journals (Sweden)

Tadeusiewicz Michał

2016-06-01

Full Text Available The paper deals with fault diagnosis of nonlinear analogue integrated circuits. Soft spot short defects are analysed taking into account variations of the circuit parameters due to physical imperfections as well as self-heating of the chip. A method enabling to detect, locate and estimate the value of a spot defect has been developed. For this purpose an appropriate objective function was minimized using an optimization procedure based on the Fibonacci method. The proposed approach exploits DC measurements in the test phase, performed at a limited number of accessible points. For illustration three numerical examples are given.

A polarity-induced defect mechanism for conductivity and magnetism at polar-nonpolar oxide interfaces.

Science.gov (United States)

Yu, Liping; Zunger, Alex

2014-10-13

The discovery of conductivity and magnetism at the polar-nonpolar interfaces of insulating nonmagnetic oxides such as LaAlO3 and SrTiO3 has raised prospects for attaining interfacial functionalities absent in the component materials. Yet, the microscopic origin of such emergent phenomena remains unclear, posing obstacles to design of improved functionalities. Here we present first principles calculations of electronic and defect properties of LaAlO3/SrTiO3 interfaces and reveal a unifying mechanism for the origins of both conductivity and magnetism. We demonstrate that the polar discontinuity across the interface triggers thermodynamically the spontaneous formation of certain defects that in turn cancel the polar field induced by the polar discontinuity. The ionization of the spontaneously formed surface oxygen vacancy defects leads to interface conductivity, whereas the unionized Ti-on-Al antisite defects lead to interface magnetism. The proposed mechanism suggests practical design principles for inducing and controlling both conductivity and magnetism at general polar-nonpolar interfaces.

Dislocations and related defects in niobium oxide structures

Energy Technology Data Exchange (ETDEWEB)

Anderson, J S; Hutchinson, J L; Lincoln, F J [Oxford Univ. (UK). Inorganic Chemistry Lab.

1977-01-07

Lattice images of the niobium oxides, structures based on the linkage of octahedral groups in continuous networks, occasionally contain features recognizable as dislocations. Since lattice imaging enables the microstructure to be resolved in greater detail, at the level of local structural organization, it is possible to determine the configuration, and also to infer the chemical composition, of dislocated areas. By treating the niobium oxide 'block' structures as superstructures of the ReO/sub 3/ (DO/sub 9/) type, the topology of dislocations can be expressed by relations between the insertion (or deletion) of one or more half-planes of cations, or of oxygen atoms only, changes in the number of crystallographic shear plane interfaces between blocks or columns, changes in (idealized) dimensions and any requisite distortion in the third dimension. Mapping the structure around a dislocation, from the lattice image, is directly equivalent to plotting the Burgers' circuit. In this way, the precise nature of a dislocating perturbation and its implications for the local chemical composition of the crystal can be directly identified. The method is exemplified by analysis of dislocations and of related extended defects of several types, associated with twinning phenomena, semicoherent intergrowth between different ReO/sub 3/-type superstructures and arrays building up a low angle boundary. The essential features of the analysis are not restricted to structures of the niobium oxide type, but can be extended to other types of polyhedron networks.

Reduced coupling of oxidative phosphorylation in vivo precedes electron transport chain defects due to mild oxidative stress in mice.

Directory of Open Access Journals (Sweden)

Michael P Siegel

Full Text Available Oxidative stress and mitochondrial function are at the core of many degenerative conditions. However, the interaction between oxidative stress and in vivo mitochondrial function is unclear. We used both pharmacological (2 week paraquat (PQ treatment of wild type mice and transgenic (mice lacking Cu, Zn-superoxide dismutase (SOD1(-/- models to test the effect of oxidative stress on in vivo mitochondrial function in skeletal muscle. Magnetic resonance and optical spectroscopy were used to measure mitochondrial ATP and oxygen fluxes and cell energetic state. In both models of oxidative stress, coupling of oxidative phosphorylation was significantly lower (lower P/O at rest in vivo in skeletal muscle and was dose-dependent in the PQ model. Despite this reduction in efficiency, in vivo mitochondrial phosphorylation capacity (ATPmax was maintained in both models, and ex vivo mitochondrial respiration in permeabilized muscle fibers was unchanged following PQ treatment. In association with the reduced P/O, PQ treatment led to a dose-dependent reduction in PCr/ATP ratio and increased phosphorylation of AMPK. These results indicate that oxidative stress uncouples oxidative phosphorylation in vivo and results in energetic stress in the absence of defects in the mitochondrial electron transport chain.

Effect of cladding defect size on the oxidation of irradiated spent LWR [light-water reactor] fuel below 3690C

International Nuclear Information System (INIS)

Einziger, R.E.; Strain, R.V.

1984-01-01

Tests on spent fuel fragments and rod segments were conducted between 250 and 360 0 C to relate temperature, defect size, and fuel oxidation rate with time-to-cladding-splitting. Defect sizes from 760 μm diameter down to 8 μm, the size of an SCC type breach, were used. Above 283 0 C, the time-to-cladding-splitting was longer for the smaller defects. The enhancement of the incubation time by smaller defects steadily decreased with temperature and was not detected at 250 0 C. 18 refs., 10 figs., 4 tabs

Evaluation of crystallographic strain, rotation and defects in functional oxides by the moiré effect in scanning transmission electron microscopy

Science.gov (United States)

Naden, A. B.; O'Shea, K. J.; MacLaren, D. A.

2018-04-01

Moiré patterns in scanning transmission electron microscopy (STEM) images of epitaxial perovskite oxides are used to assess strain and defect densities over fields of view extending over several hundred nanometers. The patterns arise from the geometric overlap of the rastered STEM electron beam and the samples’ crystal periodicities and we explore the emergence and application of these moiré fringes for rapid strain analysis. Using the epitaxial functional oxide perovskites BiFeO3 and Pr1-x Ca x MnO3, we discuss the impact of large degrees of strain on the quantification of STEM moiré patterns, identify defects in the fringe patterns and quantify strain and lattice rotation. Such a wide-area analysis of crystallographic strain and defects is crucial for developing structure-function relations of functional oxides and we find the STEM moiré technique to be an attractive means of structural assessment that can be readily applied to low dose studies of damage sensitive crystalline materials.

Defect tolerance in resistor-logic demultiplexers for nanoelectronics.

Science.gov (United States)

Kuekes, Philip J; Robinett, Warren; Williams, R Stanley

2006-05-28

Since defect rates are expected to be high in nanocircuitry, we analyse the performance of resistor-based demultiplexers in the presence of defects. The defects observed to occur in fabricated nanoscale crossbars are stuck-open, stuck-closed, stuck-short, broken-wire, and adjacent-wire-short defects. We analyse the distribution of voltages on the nanowire output lines of a resistor-logic demultiplexer, based on an arbitrary constant-weight code, when defects occur. These analyses show that resistor-logic demultiplexers can tolerate small numbers of stuck-closed, stuck-open, and broken-wire defects on individual nanowires, at the cost of some degradation in the circuit's worst-case voltage margin. For stuck-short and adjacent-wire-short defects, and for nanowires with too many defects of the other types, the demultiplexer can still achieve error-free performance, but with a smaller set of output lines. This design thus has two layers of defect tolerance: the coding layer improves the yield of usable output lines, and an avoidance layer guarantees that error-free performance is achieved.

Scan direction induced charging dynamics and the application for detection of gate to S/D shorts in logic devices

Science.gov (United States)

Lei, Ming; Tian, Qing; Wu, Kevin; Zhao, Yan

2016-03-01

Gate to source/drain (S/D) short is the most common and detrimental failure mechanism for advanced process technology development in Metal-Oxide-Semiconductor-Field-Effect-Transistor (MOSFET) device manufacturing. Especially for sub-1Xnm nodes, MOSFET device is more vulnerable to gate-S/D shorts due to the aggressive scaling. The detection of this kind of electrical short defect is always challenging for in-line electron beam inspection (EBI), especially new shorting mechanisms on atomic scale due to new material/process flow implementation. The second challenge comes from the characterization of the shorts including identification of the exact shorting location. In this paper, we demonstrate unique scan direction induced charging dynamics (SDCD) phenomenon which stems from the transistor level response from EBI scan at post metal contact chemical-mechanical planarization (CMP) layers. We found that SDCD effect is exceptionally useful for gate-S/D short induced voltage contrast (VC) defect detection, especially for identification of shorting locations. The unique SDCD effect signatures of gate-S/D shorts can be used as fingerprint for ground true shorting defect detection. Correlation with other characterization methods on the same defective location from EBI scan shows consistent results from various shorting mechanism. A practical work flow to implement the application of SDCD effect for in-line EBI monitor of critical gate-S/D short defects is also proposed, together with examples of successful application use cases which mostly focus on static random-access memory (SRAM) array regions. Although the capability of gate-S/D short detection as well as expected device response is limited to passing transistors and pull-down transistors due to the design restriction from standard 6-cell SRAM structure, SDCD effect is proven to be very effective for gate-S/D short induced VC defect detection as well as yield learning for advanced technology development.

Tuning the reactivity of Ru nanoparticles by defect engineering of the reduced graphene oxide support

KAUST Repository

Liu, Xin

2014-01-01

We systematically investigated the electronic structure of Ru nanoparticles supported on various local structures on reduced graphene oxide (rGO) by first-principles-based calculations. We showed that Ru nanoparticles prefer to nucleate at these localized defect structures on rGO, which act as strong trapping sites for Ru nanoparticles and inhibit their aggregation. The binding of Ru nanoparticles to rGO, which is dependent on these local defect structures and correlates with the interfacial charge transfer, determines the electronic structure of the composites. Further study reveals that the performance of these composites against oxygen adsorption changes proportionally with the shift of the d-band center of the nanoparticles. The correlation between the defect structures on rGO and the reactivity of the composites suggests that controlled modification of the graphenic support by defect engineering would be an efficient way to fabricate new transition metal/rGO composites with high stability and desired reactivity. This journal is © the Partner Organisations 2014.

Effect of precursor solutions stirring on deep level defects concentration and spatial distribution in low temperature aqueous chemical synthesis of zinc oxide nanorods

Energy Technology Data Exchange (ETDEWEB)

Alnoor, Hatim, E-mail: hatim.alnoor@liu.se; Chey, Chan Oeurn; Pozina, Galia; Willander, Magnus; Nur, Omer [Department of Science and Technology (ITN), Campus Norrköping, Linköping University, SE-601 74 Norrköping (Sweden); Liu, Xianjie; Khranovskyy, Volodymyr [Department of Physics, Chemistry and Biology (IFM), Linköping University, SE-583 81 Linköping (Sweden)

2015-08-15

Hexagonal c-axis oriented zinc oxide (ZnO) nanorods (NRs) with 120-300 nm diameters are synthesized via the low temperature aqueous chemical route at 80 °C on silver-coated glass substrates. The influence of varying the precursor solutions stirring durations on the concentration and spatial distributions of deep level defects in ZnO NRs is investigated. Room temperature micro-photoluminesnce (μ-PL) spectra were collected for all samples. Cathodoluminescence (CL) spectra of the as-synthesized NRs reveal a significant change in the intensity ratio of the near band edge emission (NBE) to the deep-level emission (DLE) peaks with increasing stirring durations. This is attributed to the variation in the concentration of the oxygen-deficiency with increasing stirring durations as suggested from the X-ray photoelectron spectroscopy analysis. Spatially resolved CL spectra taken along individual NRs revealed that stirring the precursor solutions for relatively short duration (1-3 h), which likely induced high super saturation under thermodynamic equilibrium during the synthesis process, is observed to favor the formation of point defects moving towards the tip of the NRs. In contrary, stirring for longer duration (5-15 h) will induce low super saturation favoring the formation of point defects located at the bottom of the NRs. These findings demonstrate that it is possible to control the concentration and spatial distribution of deep level defects in ZnO NRs by varying the stirring durations of the precursor solutions.

Effect of precursor solutions stirring on deep level defects concentration and spatial distribution in low temperature aqueous chemical synthesis of zinc oxide nanorods

Directory of Open Access Journals (Sweden)

Hatim Alnoor

2015-08-01

Full Text Available Hexagonal c-axis oriented zinc oxide (ZnO nanorods (NRs with 120-300 nm diameters are synthesized via the low temperature aqueous chemical route at 80 °C on silver-coated glass substrates. The influence of varying the precursor solutions stirring durations on the concentration and spatial distributions of deep level defects in ZnO NRs is investigated. Room temperature micro-photoluminesnce (μ-PL spectra were collected for all samples. Cathodoluminescence (CL spectra of the as-synthesized NRs reveal a significant change in the intensity ratio of the near band edge emission (NBE to the deep-level emission (DLE peaks with increasing stirring durations. This is attributed to the variation in the concentration of the oxygen-deficiency with increasing stirring durations as suggested from the X-ray photoelectron spectroscopy analysis. Spatially resolved CL spectra taken along individual NRs revealed that stirring the precursor solutions for relatively short duration (1-3 h, which likely induced high super saturation under thermodynamic equilibrium during the synthesis process, is observed to favor the formation of point defects moving towards the tip of the NRs. In contrary, stirring for longer duration (5-15 h will induce low super saturation favoring the formation of point defects located at the bottom of the NRs. These findings demonstrate that it is possible to control the concentration and spatial distribution of deep level defects in ZnO NRs by varying the stirring durations of the precursor solutions.

The comparison of gamma-radiation and electrical stress influences on oxide and interface defects in power VDMOSFET

Directory of Open Access Journals (Sweden)

Đorić-Veljković Snežana M.

2013-01-01

Full Text Available The behaviour of oxide and interface defects in n-channel power vertical double-diffused metal-oxide-semiconductor field-effect transistors, firstly degraded by the gamma-irradiation and electric field and subsequently recovered and annealed, is presented. By analyzing the transfer characteristic shifts, the changes of threshold voltage and underlying changes of gate oxide and interface trap densities during the stress (recovery, annealing of investigated devices, it is shown that these two types of stress influence differently on the gate oxide and the SiO2-Si interface. [Projekat Ministarstva nauke Republike Srbije, br. OI171026

Abnormal photothermal effect of laser radiation on highly defect oxide bronze nanoparticles under the sub-threshold excitation of absorption

Science.gov (United States)

Gulyaev, P.; Kotvanova, M.; Omelchenko, A.

2017-05-01

The mechanism of abnormal photo-thermal effect of laser radiation on nanoparticles of oxide bronzes has been proposed in this paper. The basic features of the observed effect are: a) sub-threshold absorption of laser radiation by the excitation of donor-like levels formed in the energy gap due to superficial defects of the oxide bronze nano-crystals; b) an interband radiationless transition of energy of excitation on deep triplet levels and c) consequent recombination occurring at the plasmon absorption. K or Na atoms thermally intercalated to the octahedral crystal structure of TiO2 in the wave SHS combustion generate acceptor levels in the gap. The prepared oxide bronzes of the non-stoichiometric composition NaxTiO2 and KxTiO2 were examined by high resolution TEM, and then grinded in a planetary mill with powerful dispersion energy density up to 4000 J/g. This made it possible to obtain nanoparticles about 50 nm with high surface defect density (1017-1019 cm-2 at a depth of 10 nm). High photo-thermal effect of laser radiation on the defect nanocrystals observed after its impregnation into cartilaginous tissue exceeds 7 times in comparison with the intact ones.

Intrinsic point defects in zinc oxide. Modeling of structural, electronic, thermodynamic and kinetic properties

Energy Technology Data Exchange (ETDEWEB)

Erhart, P.

2006-07-01

The present dissertation deals with the modeling of zinc oxide on the atomic scale employing both quantum mechanical as well as atomistic methods. The first part describes quantum mechanical calculations based on density functional theory of intrinsic point defects in ZnO. To begin with, the geometric and electronic structure of vacancies and oxygen interstitials is explored. In equilibrium oxygen interstitials are found to adopt dumbbell and split interstitial configurations in positive and negative charge states, respectively. Semi-empirical self-interaction corrections allow to improve the agreement between the experimental and the calculated band structure significantly; errors due to the limited size of the supercells can be corrected by employing finite-size scaling. The effect of both band structure corrections and finite-size scaling on defect formation enthalpies and transition levels is explored. Finally, transition paths and barriers for the migration of zinc as well as oxygen vacancies and interstitials are determined. The results allow to interpret diffusion experiments and provide a consistent basis for developing models for device simulation. In the second part an interatomic potential for zinc oxide is derived. To this end, the Pontifix computer code is developed which allows to fit analytic bond-order potentials. The code is subsequently employed to obtain interatomic potentials for Zn-O, Zn-Zn, and O-O interactions. To demonstrate the applicability of the potentials, simulations on defect production by ion irradiation are carried out. (orig.)

Defects in semiconductors

CERN Document Server

Romano, Lucia; Jagadish, Chennupati

2015-01-01

This volume, number 91 in the Semiconductor and Semimetals series, focuses on defects in semiconductors. Defects in semiconductors help to explain several phenomena, from diffusion to getter, and to draw theories on materials' behavior in response to electrical or mechanical fields. The volume includes chapters focusing specifically on electron and proton irradiation of silicon, point defects in zinc oxide and gallium nitride, ion implantation defects and shallow junctions in silicon and germanium, and much more. It will help support students and scientists in their experimental and theoret

Ectopic expression of Ptf1a induces spinal defects, urogenital defects, and anorectal malformations in Danforth's short tail mice.

Directory of Open Access Journals (Sweden)

Kei Semba

Full Text Available Danforth's short tail (Sd is a semidominant mutation on mouse chromosome 2, characterized by spinal defects, urogenital defects, and anorectal malformations. However, the gene responsible for the Sd phenotype was unknown. In this study, we identified the molecular basis of the Sd mutation. By positional cloning, we identified the insertion of an early transposon in the Sd candidate locus approximately 12-kb upstream of Ptf1a. We found that insertion of the transposon caused overexpression of three neighboring genes, Gm13344, Gm13336, and Ptf1a, in Sd mutant embryos and that the Sd phenotype was not caused by disruption of an as-yet-unknown gene in the candidate locus. Using multiple knockout and knock-in mouse models, we demonstrated that misexpression of Ptf1a, but not of Gm13344 or Gm13336, in the notochord, hindgut, cloaca, and mesonephros was sufficient to replicate the Sd phenotype. The ectopic expression of Ptf1a in the caudal embryo resulted in attenuated expression of Cdx2 and its downstream target genes T, Wnt3a, and Cyp26a1; we conclude that this is the molecular basis of the Sd phenotype. Analysis of Sd mutant mice will provide insight into the development of the spinal column, anus, and kidney.

SHOX gene defects and selected dysmorphic signs in patients of idiopathic short stature and Léri-Weill dyschondrosteosis.

Science.gov (United States)

Hirschfeldova, K; Solc, R; Baxova, A; Zapletalova, J; Kebrdlova, V; Gaillyova, R; Prasilova, S; Soukalova, J; Mihalova, R; Lnenicka, P; Florianova, M; Stekrova, J

2012-01-10

The aim of the study was to analyze frequency of SHOX gene defects and selected dysmorphic signs in patients of both idiopathic short stature (ISS) and Léri-Weill dyschondrosteosis (LWD), all derived from the Czech population. Overall, 98 subjects were analyzed in the study. Inclusion criteria were the presence of short stature (-2.0 SD), in combination with at least one of the selected dysmorphic signs for the ISS+ group; and the presence of Madelung deformity, without positive karyotyping for the LWD+ group. Each proband was analyzed by use of P018 MLPA kit, which covers SHOX and its regulatory sequences. Additionally, mutational analysis was done of the coding portions of the SHOX. Both extent and breakpoint localizations in the deletions/duplications found were quite variable. Some PAR1 rearrangements were detected, without obvious phenotypic association. In the ISS+ group, MLPA analysis detected four PAR1 deletions associated with a SHOX gene defect, PAR1 duplication with an ambiguous effect, and two SHOX mutations (13.7%). In the LWD+ group, MLPA analysis detected nine deletions in PAR1 region, with a deleterious effect on SHOX, first reported case of isolated SHOX enhancer duplication, and SHOX mutation (68.8%). In both ISS+ and LWD+ groups were positivity associated with a disproportionately short stature; in the ISS+ group, in combination with muscular hypertrophy. It seems that small PAR1 rearrangements might be quite frequent in the population. Our study suggests disproportionateness, especially in combination with muscular hypertrophy, as relevant indicators of ISS to be the effect of SHOX defect. Copyright © 2011 Elsevier B.V. All rights reserved.

Controlled Defects of Zinc Oxide Nanorods for Efficient Visible Light Photocatalytic Degradation of Phenol

Directory of Open Access Journals (Sweden)

Jamal Al-Sabahi

2016-03-01

Full Text Available Environmental pollution from human and industrial activities has received much attention as it adversely affects human health and bio-diversity. In this work we report efficient visible light photocatalytic degradation of phenol using supported zinc oxide (ZnO nanorods and explore the role of surface defects in ZnO on the visible light photocatalytic activity. ZnO nanorods were synthesized on glass substrates using a microwave-assisted hydrothermal process, while the surface defect states were controlled by annealing the nanorods at various temperatures and were characterized by photoluminescence and X-ray photoelectron spectroscopy. High performance liquid chromatography (HPLC was used for the evaluation of phenol photocatalytic degradation. ZnO nanorods with high surface defects exhibited maximum visible light photocatalytic activity, showing 50% degradation of 10 ppm phenol aqueous solution within 2.5 h, with a degradation rate almost four times higher than that of nanorods with lower surface defects. The mineralization process of phenol during degradation was also investigated, and it showed the evolution of different photocatalytic byproducts, such as benzoquinone, catechol, resorcinol and carboxylic acids, at different stages. The results from this study suggest that the presence of surface defects in ZnO nanorods is crucial for its efficient visible light photocatalytic activity, which is otherwise only active in the ultraviolet region.

Point defects in solids

International Nuclear Information System (INIS)

Anon.

1978-01-01

The principal properties of point defects are studied: thermodynamics, electronic structure, interactions with etended defects, production by irradiation. Some measuring methods are presented: atomic diffusion, spectroscopic methods, diffuse scattering of neutron and X rays, positron annihilation, molecular dynamics. Then points defects in various materials are investigated: ionic crystals, oxides, semiconductor materials, metals, intermetallic compounds, carbides, nitrides [fr

Effect of morphology and defect density on electron transfer of electrochemically reduced graphene oxide

Energy Technology Data Exchange (ETDEWEB)

Zhang, Yan, E-mail: yanzhang@sues.edu.cn [School of Material Engineering, Shanghai University of Engineering Science, Shanghai 201620 (China); Hao, Huilian, E-mail: huilian.hao@sues.edu.cn [School of Material Engineering, Shanghai University of Engineering Science, Shanghai 201620 (China); Wang, Linlin, E-mail: wlinlin@mail.ustc.edu.cn [College of Chemistry and Chemical Engineering, Shanghai University of Engineering Science, Shanghai 201620 (China)

2016-12-30

Highlights: • Different morphologies of ERGO on the surface of GCE were prepared via different methods. • The defect densities of ERGO were controlled by tuning the mass or concentration of GO. • A higher defect density of ERGO accelerates electron transfer rate. • ERGO with more exposed edge planes shows significantly higher electron transfer kinetics. • Both edge planes and defect density contribute to electron transfer of ERGO. - Abstract: Electrochemically reduced graphene oxide (ERGO) is widely used to construct electrochemical sensors. Understanding the electron transfer behavior of ERGO is essential for its electrode material applications. In this paper, different morphologies of ERGO were prepared via two different methods. Compared to ERGO/GCEs prepared by electrochemical reduction of pre-deposited GO, more exposed edge planes of ERGO are observed on the surface of ERGO-GCE that was constructed by electrophoretic deposition of GO. The defect densities of ERGO were controlled by tuning the mass or concentration of GO. The electron transfer kinetics (k{sup 0}) of GCE with different ERGOs was comparatively investigated. Owing to increased surface areas and decreased defect density, the k{sup 0} values of ERGO/GCE initially increase and then decrease with incrementing of GO mass. When the morphology and surface real areas of ERGO-GCE are the same, an increased defect density induces an accelerated electron transfer rate. k{sup 0} valuesof ERGO-GCEs are about 1 order of magnitude higher than those of ERGO/GCEs due to the difference in the amount of edge planes. This work demonstrates that both defect densities and edge planes of ERGO play crucial roles in electron transfer kinetics.

Effect of morphology and defect density on electron transfer of electrochemically reduced graphene oxide

International Nuclear Information System (INIS)

Zhang, Yan; Hao, Huilian; Wang, Linlin

2016-01-01

Highlights: • Different morphologies of ERGO on the surface of GCE were prepared via different methods. • The defect densities of ERGO were controlled by tuning the mass or concentration of GO. • A higher defect density of ERGO accelerates electron transfer rate. • ERGO with more exposed edge planes shows significantly higher electron transfer kinetics. • Both edge planes and defect density contribute to electron transfer of ERGO. - Abstract: Electrochemically reduced graphene oxide (ERGO) is widely used to construct electrochemical sensors. Understanding the electron transfer behavior of ERGO is essential for its electrode material applications. In this paper, different morphologies of ERGO were prepared via two different methods. Compared to ERGO/GCEs prepared by electrochemical reduction of pre-deposited GO, more exposed edge planes of ERGO are observed on the surface of ERGO-GCE that was constructed by electrophoretic deposition of GO. The defect densities of ERGO were controlled by tuning the mass or concentration of GO. The electron transfer kinetics (k"0) of GCE with different ERGOs was comparatively investigated. Owing to increased surface areas and decreased defect density, the k"0 values of ERGO/GCE initially increase and then decrease with incrementing of GO mass. When the morphology and surface real areas of ERGO-GCE are the same, an increased defect density induces an accelerated electron transfer rate. k"0 valuesof ERGO-GCEs are about 1 order of magnitude higher than those of ERGO/GCEs due to the difference in the amount of edge planes. This work demonstrates that both defect densities and edge planes of ERGO play crucial roles in electron transfer kinetics.

Thermogravimetric analysis and TEM characterization of the oxidation and defect sites of carbon nanotubes synthesized by CVD of methane

International Nuclear Information System (INIS)

Li Haipeng; Zhao Naiqin; He Chunnian; Shi Chunsheng; Du Xiwen; Li Jiajun

2008-01-01

Changes in the thermogravimetrically determined oxidation behaviors of CVD-grown multi-walled carbon nanotubes (MWNTs) over Ni/Al catalyst with different Ni content were examined. Catalyst type was found to have a measurable impact upon nanotube stability, suggesting differing levels of crystalline perfection in the resulting nanotubes. With increasing the Ni content in the Ni/Al catalyst, the CNTs obtained became less stable during heat treatment in air. Furthermore, high-resolution transmission electron microscopy was employed to investigate the defect sites of as-grown MWNTs. The results provide evidence showing that defect sites along the walls and at the ends of the raw MWNTs facilitate the thermal oxidative destruction of the nanotubes

A model for the formation of lattice defects at silicon oxide precipitates in silicon

International Nuclear Information System (INIS)

Vanhellemont, J.; Gryse, O. de; Clauws, P.

2003-01-01

The critical size of silicon oxide precipitates and the formation of lattice defects by the precipitates are discussed. An expression is derived allowing estimation of self-interstitial emission by spherical precipitates as well as strain build-up during precipitate growth. The predictions are compared with published experimental data. A model for stacking fault nucleation at oxide precipitates is developed based on strain and self-interstitial accumulation during the thermal history of the wafer. During a low-temperature treatment high levels of strain develop. During subsequent high-temperature treatment, excess strain energy in the precipitate is released by self-interstitial emission leading to favourable conditions for stacking fault nucleation

Intrinsic electronic defects and multiple-atom processes in the oxidic semiconductor Ga2O3

Science.gov (United States)

Schmeißer, Dieter; Henkel, Karsten

2018-04-01

We report on the electronic structure of gallium oxide (Ga2O3) single crystals as studied by resonant photoelectron spectroscopy (resPES). We identify intrinsic electronic defects that are formed by mixed-atomic valence states. We differentiate three coexisting defect states that differ in their electronic correlation energy and their spatial localization lengths. Their relative abundance is described by a fractional ionicity with covalent and ionic bonding contributions. For Ga2O3, our analyses of the resPES data enable us to derive two main aspects: first, experimental access is given to determine the ionicity based on the original concepts of Pauling and Phillips. Second, we report on multi-atomic energy loss processes in the Ga2p core level and X-ray absorption data. The two experimental findings can be explained consistently in the same context of mixed-atomic valence states and intrinsic electronic defects.

Type 2 diabetes mellitus induces congenital heart defects in murine embryos by increasing oxidative stress, endoplasmic reticulum stress, and apoptosis.

Science.gov (United States)

Wu, Yanqing; Reece, E Albert; Zhong, Jianxiang; Dong, Daoyin; Shen, Wei-Bin; Harman, Christopher R; Yang, Peixin

2016-09-01

Maternal type 1 and 2 diabetes mellitus are strongly associated with high rates of severe structural birth defects, including congenital heart defects. Studies in type 1 diabetic embryopathy animal models have demonstrated that cellular stress-induced apoptosis mediates the teratogenicity of maternal diabetes leading to congenital heart defect formation. However, the mechanisms underlying maternal type 2 diabetes mellitus-induced congenital heart defects remain largely unknown. We aim to determine whether oxidative stress, endoplasmic reticulum stress, and excessive apoptosis are the intracellular molecular mechanisms underlying maternal type 2 diabetes mellitus-induced congenital heart defects. A mouse model of maternal type 2 diabetes mellitus was established by feeding female mice a high-fat diet (60% fat). After 15 weeks on the high-fat diet, the mice showed characteristics of maternal type 2 diabetes mellitus. Control dams were either fed a normal diet (10% fat) or the high-fat diet during pregnancy only. Female mice from the high-fat diet group and the 2 control groups were mated with male mice that were fed a normal diet. At E12.5, embryonic hearts were harvested to determine the levels of lipid peroxides and superoxide, endoplasmic reticulum stress markers, cleaved caspase 3 and 8, and apoptosis. E17.5 embryonic hearts were harvested for the detection of congenital heart defect formation using India ink vessel patterning and histological examination. Maternal type 2 diabetes mellitus significantly induced ventricular septal defects and persistent truncus arteriosus in the developing heart, along with increasing oxidative stress markers, including superoxide and lipid peroxidation; endoplasmic reticulum stress markers, including protein levels of phosphorylated-protein kinase RNA-like endoplasmic reticulum kinase, phosphorylated-IRE1α, phosphorylated-eIF2α, C/EBP homologous protein, and binding immunoglobulin protein; endoplasmic reticulum chaperone gene

Highly visible-light luminescence properties of the carboxyl-functionalized short and ultrashort MWNTs

International Nuclear Information System (INIS)

Luo Yongsong; Xia Xiaohong; Liang Ying; Zhang Yonggang; Ren Qinfeng; Li Jialin; Jia Zhijie; Tang Yiwen

2007-01-01

Luminescence of the short multiwalled carbon nanotubes (MWNTs) conjugated with carboxylic acid groups has been studied. The results show that the carboxyl-functionalized short MWNTs could emit luminescence and the emission peak appears at 500 nm with a corresponding optimal excitation wavelength centering at 310 nm. When the short MWNTs are filtered through 0.15 μm polytetrafluoroethylene (PTFE) membrane, the ultrashort MWNTs are obtained from the filtrate. An interesting feature for the ultrashort MWNTs is that the emission intensity is strengthened and the peak is slightly blue shifted to 460 nm. This result indicates that the luminescence properties of MWNTs are strongly affected by the tube length. After chemical oxidization cutting, defects and carboxylic acid groups at the tube end and/or sidewall can be produced; the more shorten of MWNTs, the better dispersion and carboxylic passivation of the nanotubes, and the more intense luminescence emissions. The broad emissions are logically attributed to the trapping of excitation energy by defect sites in the carboxyl-functionalized nanotube structure. - Graphical abstract: Luminescence of the short and ultrashort multiwalled carbon nanotubes (MWNTs) conjugated with carboxylic acid groups, which is logically attributed to the trapping of excitation energy by defect sites, has been studied

Evaluation of oxidative status in short-term exercises of adolescent athletes

OpenAIRE

K Karacabey; A Atas; D Zeyrek; A Cakmak; R Kurkcu; F Yamaner

2010-01-01

The aim of the study was to evaluate the effects of short-term exercise on total antioxidant status (TAS), lipid hydroperoxide (LOOHs), total oxidative status (TOS) and oxidative stress index (OSI) in adolescent athletes. A total of 62 adolescent participated in the study. Athletes were trained regularly 3 days a week for 2 hours. All subjects followed a circuit exercise program. Blood samples were collected just before and immediately after the exercise program. Antioxidant status was evalu...

Role of masking oxide on silicon in processes of defect generation at formation of SIMOX structures

CERN Document Server

Askinazi, A Y; Miloglyadova, L V

2002-01-01

One investigated into Si-SiO sub 2 structures formed by implantation of oxygen ions into silicon (SIMOX-technology) by means of techniques based on measuring of high-frequency volt-farad characteristics and by means of electroluminescence. One determined existence of electrically active centres and of luminescence centres in the formed oxide layer near boundary with silicon. One clarified the role SiO sub 2 masking layer in silicon in defect generation under formation of the masked oxide layer. One established dependence of concentration of electrically active and luminescence centres on thickness of masking layer

Ab initio study of point defects in magnesium oxide

International Nuclear Information System (INIS)

Gilbert, C. A.; Kenny, S. D.; Smith, R.; Sanville, E.

2007-01-01

Energetics of a variety of point defects in MgO have been considered from an ab initio perspective using density functional theory. The considered defects are isolated Schottky and Frenkel defects and interstitial pairs, along with a number of Schottky defects and di-interstitials. Comparisons were made between the density functional theory results and results obtained from empirical potential simulations and these generally showed good agreement. Both methodologies predicted the first nearest neighbor Schottky defects to be the most energetically favorable of the considered Schottky defects and that the first, second, and fifth nearest neighbor di-interstitials were of similar energy and were favored over the other di-interstitial configurations. Relaxed structures of the defects were analyzed, which showed that empirical potential simulations were accurately predicting the displacements of atoms surrounding di-interstitials, but were overestimating O atom displacement for Schottky defects. Transition barriers were computed for the defects using the nudged elastic band method. Vacancies and Schottky defects were found to have relatively high energy barriers, the majority of which were over 2 eV, in agreement with conclusions reached using empirical potentials. The lowest barriers for di-interstitial transitions were found to be for migration into a first nearest neighbor configuration. Charges were calculated using a Bader analysis and this found negligible charge transfer during the defect transitions and only small changes in the charges on atoms surrounding defects, indicating why fixed charge models work as well as they do

Magnetic electrospun short nanofibers wrapped graphene oxide as a promising biomaterials for guiding cellular behavior.

Science.gov (United States)

Feng, Zhang-Qi; Shi, Chuanmei; Zhao, Bin; Wang, Ting

2017-12-01

Magnetic particles show extremely wide application prospects in the biomedical field, particularly in the success of cellular manipulation, drug delivery systems, magnetic hyperthermia and NRI contrast enhancement. Graphene oxide with functional groups has a promising biological effect. In this work, we develop magnetic short-fibers wrapped graphene oxide for guiding cellular behavior with the aid of high-speed shear of nanofibers fabricated through electrospinning technique. The diameter and the length of short-fibers are about 300nm and 80μm, respectively. The short-fibers exhibit superior magnetic properties (saturation magnetization value: 50.33emu/g), which has a strong response appearance to the NdFeB magnet. SEM images and laser confocal images display that there has an extremely tight adhesion between the short-fibers wrapped graphene oxide and cells. The control of cell-fibers structure behavior can be realized by applying external magnet. The results may provide an attractive perspective on the treatment of disease with magnetic field. Copyright © 2017 Elsevier B.V. All rights reserved.

Effects of phosphorylatable short peptide-conjugated chitosan-mediated IL-1Ra and igf-1 gene transfer on articular cartilage defects in rabbits.

Directory of Open Access Journals (Sweden)

Ronglan Zhao

Full Text Available Previously, we reported an improvement in the transfection efficiency of the plasmid DNA-chitosan (pDNA/CS complex by the utilization of phosphorylatable short peptide-conjugated chitosan (pSP-CS. In this study, we investigated the effects of pSP-CS-mediated gene transfection of interleukin-1 receptor antagonist protein (IL-1Ra combined with insulin-like growth factor-1 (IGF-1 in rabbit chondrocytes and in a rabbit model of cartilage defects. pBudCE4.1-IL-1Ra+igf-1, pBudCE4.1-IL-1Ra and pBudCE4.1-igf-1 were constructed and combined with pSP-CS to form pDNA/pSP-CS complexes. These complexes were transfected into rabbit primary chondrocytes or injected into the joint cavity. Seven weeks after treatment, all rabbits were sacrificed and analyzed. High levels of IL-1Ra and igf-1 expression were detected both in the cell culture supernatant and in the synovial fluid. In vitro, the transgenic complexes caused significant proliferation of chondrocytes, promotion of glycosaminoglycan (GAG and collagen II synthesis, and inhibition of chondrocyte apoptosis and nitric oxide (NO synthesis. In vivo, the exogenous genes resulted in increased collagen II synthesis and reduced NO and GAG concentrations in the synovial fluid; histological studies revealed that pDNA/pSP-CS treatment resulted in varying degrees of hyaline-like cartilage repair and Mankin score decrease. The co-expression of both genes produced greater effects than each single gene alone both in vitro and in vivo. The results suggest that pSP-CS is a good candidate for use in gene therapy for the treatment of cartilage defects and that igf-1 and IL-1Ra co-expression produces promising biologic effects on cartilage defects.

Dynamics of Defects and Dopants in Complex Systems: Si and Oxide Surfaces and Interfaces

Science.gov (United States)

Kirichenko, Taras; Yu, Decai; Banarjee, Sanjay; Hwang, Gyeong

2004-10-01

Fabrication of forthcoming nanometer scale electronic devices faces many difficulties including formation of extremely shallow and highly doped junctions. At present, ultra-low-energy ion implantation followed by high-temperature thermal annealing is most widely used to fabricate such ultra-shallow junctions. In the process, a great challenge lies in achieving precise control of redistribution and electrical activation of dopant impurities. Native defects (such as vacancies and interstitials) generated during implantation are known to be mainly responsible for the TED and also influence significantly the electrical activation/deactivation. Defect-dopant dynamics is rather well understood in crystalline Si and SiO2. However, little is known about their diffusion and annihilation (or precipitation) at the surfaces and interfaces, despite its growing importance in determining junction profiles as device dimensions get smaller. In this talk, we will present our density functional theory calculation results on the atomic and electronic structure and dynamical behavior of native defects and dopant-defect complexes in disordered/strained Si and oxide systems, such as i) clean and absorbent-modified Si(100) surface and subsurface layers, ii) amorphous-crystalline Si interfaces and iii) amorphous SiO2/Si interfaces. The fundamental understanding and data is essential in developing a comprehensive kinetic model for junction formation, which would contribute greatly in improving current process technologies.

Expeditious low-temperature sintering of copper nanoparticles with thin defective carbon shells

Science.gov (United States)

Kim, Changkyu; Lee, Gyoungja; Rhee, Changkyu; Lee, Minku

2015-04-01

The realization of air-stable nanoparticles, well-formulated nanoinks, and conductive patterns based on copper is a great challenge in low-cost and large-area flexible printed electronics. This work reports the synthesis of a conductively interconnected copper structure via thermal sintering of copper inks at a low temperature for a short period of time, with the help of thin defective carbon shells coated onto the copper nanoparticles. Air-stable copper/carbon core/shell nanoparticles (typical size ~23 nm, shell thickness ~1.0 nm) are prepared by means of an electric explosion of wires. Gaseous oxidation of the carbon shells with a defective structure occurs at 180 °C, impacting the choice of organic solvents as well as the sintering conditions to create a crucial neck formation. Isothermal oxidation and reduction treatment at 200 °C for only about 10 min yields an oxide-free copper network structure with an electrical resistivity of 25.1 μΩ cm (14.0 μΩ cm at 250 °C). Finally, conductive copper line patterns are achieved down to a 50 μm width with an excellent printing resolution (standard deviation ~4.0%) onto a polyimide substrate using screen printing of the optimized inks.The realization of air-stable nanoparticles, well-formulated nanoinks, and conductive patterns based on copper is a great challenge in low-cost and large-area flexible printed electronics. This work reports the synthesis of a conductively interconnected copper structure via thermal sintering of copper inks at a low temperature for a short period of time, with the help of thin defective carbon shells coated onto the copper nanoparticles. Air-stable copper/carbon core/shell nanoparticles (typical size ~23 nm, shell thickness ~1.0 nm) are prepared by means of an electric explosion of wires. Gaseous oxidation of the carbon shells with a defective structure occurs at 180 °C, impacting the choice of organic solvents as well as the sintering conditions to create a crucial neck formation

Layered sphere-shaped TiO₂ capped with gold nanoparticles on structural defects and their catalysis of formaldehyde oxidation.

Science.gov (United States)

Ma, Chunyan; Pang, Guanglong; He, Guangzhi; Li, Yang; He, Chi; Hao, Zhengping

2016-01-01

We describe here a one-step method for the synthesis of Au/TiO2 nanosphere materials, which were formed by layered deposition of multiple anatase TiO2 nanosheets. The Au nanoparticles were stabilized by structural defects in each TiO2 nanosheet, including crystal steps and edges, thereby fixing the Au-TiO2 perimeter interface. Reactant transfer occurred along the gaps between these TiO2 nanosheet layers and in contact with catalytically active sites at the Au-TiO2 interface. The doped Au induced the formation of oxygen vacancies in the Au-TiO2 interface. Such vacancies are essential for generating active oxygen species (*O(-)) on the TiO2 surface and Ti(3+) ions in bulk TiO2. These ions can then form Ti(3+)-O(-)-Ti(4+) species, which are known to enhance the catalytic activity of formaldehyde (HCHO) oxidation. These studies on structural and oxygen vacancy defects in Au/TiO2 samples provide a theoretical foundation for the catalytic mechanism of HCHO oxidation on oxide-supported Au materials. Copyright © 2015. Published by Elsevier B.V.

A case of osteomalacia due to deranged mineral balance caused by saccharated ferric oxide and short-bowel syndrome

Science.gov (United States)

Nomoto, Hiroshi; Miyoshi, Hideaki; Nakamura, Akinobu; Nagai, So; Kitao, Naoyuki; Shimizu, Chikara; Atsumi, Tatsuya

2017-01-01

Abstract Rationale: Saccharated ferric oxide has been shown to lead to elevation of fibroblast growth factor 23, hypophosphatemia, and, consequently, osteomalacia. Moreover, mineral imbalance is often observed in patients with short-bowel syndrome to some degree. Patient concerns: A 62-year-old woman with short-bowel syndrome related with multiple resections of small intestines due to Crohn disease received regular intravenous administration of saccharated ferric oxide. Over the course of treatment, she was diagnosed with tetany, which was attributed to hypocalcemia. Additional assessments of the patient revealed not only hypocalcemia, but also hypophosphatemia, hypomagnesemia, osteomalacia, and a high concentration of fibroblast growth factor 23 (314 pg/mL). Diagnoses: We diagnosed her with mineral imbalance-induced osteomalacia due to saccharated ferric oxide and short-bowel syndrome. Interventions: Magnesium replacement therapy and discontinuation of saccharated ferric oxide alone. Outcomes: These treatments were able to normalize her serum mineral levels and increase her bone mineral density. Lessons: This case suggests that adequate evaluation of serum minerals, including phosphate and magnesium, during saccharated ferric oxide administration may be necessary, especially in patients with short-bowel syndrome. PMID:28953654

Defect ordering in aliovalently doped cubic zirconia from first principles

International Nuclear Information System (INIS)

Bogicevic, A.; Wolverton, C.; Crosbie, G.M.; Stechel, E.B.

2001-01-01

Defect ordering in aliovalently doped cubic-stabilized zirconia is studied using gradient corrected density-functional calculations. Intra- and intersublattice ordering interactions are investigated for both cation (Zr and dopant ions) and anion (oxygen ions and vacancies) species. For yttria-stabilized zirconia, the crystal structure of the experimentally identified, ordered compound δ-Zr 3 Y 4 O 12 is established, and we predict metastable zirconia-rich ordered phases. Anion vacancies repel each other at short separations, but show an energetic tendency to align as third-nearest neighbors along directions. Calculations with divalent (Be, Mg, Ca, Sr, Ba) and trivalent (Y, Sc, B, Al, Ga, In) oxides show that anion vacancies prefer to be close to the smaller of the cations (Zr or dopant ion). When the dopant cation is close in size to Zr, the vacancies show no particular preference, and are thus less prone to be bound preferentially to any particular cation type when the vacancies traverse such oxides. This ordering tendency offers insight into the observed high conductivity of Y 2 O 3 - and Sc 2 O 3 -stabilized zirconia, as well as recent results using, e.g., lanthanide oxides. The calculations point to In 2 O 3 as a particularly promising stabilizer for high ionic conductivity. Thus we are able to directly link (thermodynamic) defect ordering to (kinetic) ionic conductivity in cubic-stabilized zirconia using first-principles atomistic calculations

New fundamental defects in a-SiO2

International Nuclear Information System (INIS)

Karna, S.P.; Kurtz, H.A.; Shedd, W.M.; Pugh, R.D.; Singaraju, B.K.

1999-01-01

Throughout the three decades of research into radiation-induced degradation of metal-oxide-semiconductor (MOS) devices, investigators understood that point defects in the Si-SiO 2 structure (localized deviations from stoichiometrically pure Si and SiO 2 ) are responsible for many observed anomalies. Basic research in this area has progressed along two tracks: (i) differentiating the anomalies based upon subtle differences in their characteristic behavior, and (ii) precise description of the defects responsible for the anomalous behavior. These two research tracks are complementary since often a discovery in one area provides insight and ultimately leads to discoveries in the other. Here, the atomic structure and spin properties of two previously undescribed amorphous silicon dioxide fundamental point defects have been characterized for the first time by ab initio quantum mechanical calculations. Both defects are electrically neutral trivalent silicon centers in the oxide. One of the defects, the X-center, is determined to have an O 2 Sitriple b ondSi ↑ atomic structure. The other defect, called the Y-center, is found to have an OSi 2 triple b ondSi ↑ structure. Calculated electronic and electrical properties of the new defect centers are consistent with the published characteristics of the oxide switching trap or border trap precursors

A short synthesis-stuttgart of (S)-pyrrolam A via domino oxidation-witting reaction

Digital Repository Service at National Institute of Oceanography (India)

Majik, M.S.; Shet, J.; Tilve, S.G.; Parameswaran, P.S.

A short synthesis of (S)-pyrrolam A starting from readily available N-(benzyloxycarbonyl)-L prolinol is described that makes use of a domino primary alcohol oxidation-Witting reaction as the key step...

Defect engineering in 1D Ti-W oxide nanotube arrays and their correlated photoelectrochemical performance.

Science.gov (United States)

Abdelhafiz, Ali A; Ganzoury, Mohamed A; Amer, Ahmad W; Faiad, Azza A; Khalifa, Ahmed M; AlQaradawi, Siham Y; El-Sayed, Mostafa A; Alamgir, Faisal M; Allam, Nageh K

2018-04-18

Understanding the nature of interfacial defects of materials is a critical undertaking for the design of high-performance hybrid electrodes for photocatalysis applications. Theoretical and computational endeavors to achieve this have touched boundaries far ahead of their experimental counterparts. However, to achieve any industrial benefit out of such studies, experimental validation needs to be systematically undertaken. In this sense, we present herein experimental insights into the synergistic relationship between the lattice position and oxidation state of tungsten ions inside a TiO2 lattice, and the respective nature of the created defect states. Consequently, a roadmap to tune the defect states in anodically-fabricated, ultrathin-walled W-doped TiO2 nanotubes is proposed. Annealing the nanotubes in different gas streams enabled the engineering of defects in such structures, as confirmed by XRD and XPS measurements. While annealing under hydrogen stream resulted in the formation of abundant Wn+ (n < 6) ions at the interstitial sites of the TiO2 lattice, oxygen- and air-annealing induced W6+ ions at substitutional sites. EIS and Mott-Schottky analyses indicated the formation of deep-natured trap states in the hydrogen-annealed samples, and predominantly shallow donating defect states in the oxygen- and air-annealed samples. Consequently, the photocatalytic performance of the latter was significantly higher than those of the hydrogen-annealed counterparts. Upon increasing the W content, photoelectrochemical performance deteriorated due to the formation of WO3 crystallites that hindered charge transfer through the photoanode, as evident from the structural and chemical characterization. To this end, this study validates the previous theoretical predictions on the detrimental effect of interstitial W ions. In addition, it sheds light on the importance of defect states and their nature for tuning the photoelectrochemical performance of the investigated materials.

Visualizing chemical states and defects induced magnetism of graphene oxide by spatially-resolved-X-ray microscopy and spectroscopy.

Science.gov (United States)

Wang, Y F; Singh, Shashi B; Limaye, Mukta V; Shao, Y C; Hsieh, S H; Chen, L Y; Hsueh, H C; Wang, H T; Chiou, J W; Yeh, Y C; Chen, C W; Chen, C H; Ray, Sekhar C; Wang, J; Pong, W F; Takagi, Y; Ohigashi, T; Yokoyama, T; Kosugi, N

2015-10-20

This investigation studies the various magnetic behaviors of graphene oxide (GO) and reduced graphene oxides (rGOs) and elucidates the relationship between the chemical states that involve defects therein and their magnetic behaviors in GO sheets. Magnetic hysteresis loop reveals that the GO is ferromagnetic whereas photo-thermal moderately reduced graphene oxide (M-rGO) and heavily reduced graphene oxide (H-rGO) gradually become paramagnetic behavior at room temperature. Scanning transmission X-ray microscopy and corresponding X-ray absorption near-edge structure spectroscopy were utilized to investigate thoroughly the variation of the C 2p(π*) states that are bound with oxygen-containing and hydroxyl groups, as well as the C 2p(σ*)-derived states in flat and wrinkle regions to clarify the relationship between the spatially-resolved chemical states and the magnetism of GO, M-rGO and H-rGO. The results of X-ray magnetic circular dichroism further support the finding that C 2p(σ*)-derived states are the main origin of the magnetism of GO. Based on experimental results and first-principles calculations, the variation in magnetic behavior from GO to M-rGO and to H-rGO is interpreted, and the origin of ferromagnetism is identified as the C 2p(σ*)-derived states that involve defects/vacancies rather than the C 2p(π*) states that are bound with oxygen-containing and hydroxyl groups on GO sheets.

Charged defects during alpha-irradiation of actinide oxides as revealed by Raman and luminescence spectroscopy

International Nuclear Information System (INIS)

Mohun, R.; Desgranges, L.; Léchelle, J.; Simon, P.; Guimbretière, G.; Canizarès, A.; Duval, F.; Jegou, C.; Magnin, M.; Clavier, N.; Dacheux, N.; Valot, C.; Vauchy, R.

2016-01-01

We have recently evidenced an original Raman signature of alpha irradiation-induced defects in UO 2 . In this study, we aim to determine whether the same signature also exists in different actinide oxides, namely ThO 2 and PuO 2 . Sintered UO 2 and ThO 2 were initially irradiated with 21 MeV He 2+ ions using a cyclotron device and were subjected to an in situ luminescence experiment followed by Raman analysis. In addition, a PuO 2 sample which had accumulated self-irradiation damage due to alpha particles was investigated only by Raman measurement. Results obtained for the initially white ThO 2 showed that a blue color appeared in the irradiated areas as well as luminescence signals during irradiation. However, Raman spectroscopic analysis showed the absence of Raman signature in ThO 2 . In contrast, the irradiated UO 2 and PuO 2 confirmed the presence of the Raman signature but no luminescence peaks were observed. The proposed mechanism involves electronic defects in ThO 2 , while a coupling between electronic defects and phonons is required to explain the Raman spectra for UO 2 and PuO 2 .

Intrinsic defect oriented visible region absorption in zinc oxide films

Science.gov (United States)

Rakhesh, V.; Shankar, Balakrishnan

2018-05-01

Zinc Oxide films were deposited on the glass substrate using vacuum arc sputtering technology. Films were prepared in oxygen ambience for 10mA and 15 mA deposition current separately. The UV-Visible spectroscopy of the samples showed that both samples possess sharp absorption near 3.5eV which is the characteristic band gap absorption energy of ZnO films. The absorption coefficient were calculated for the samples and the (αℎϑ)2 vs energy plot is drawn. The plot suggested that in addition to the sharp band edge absorption, the sample prepared at 10mA deposition current showed sharp absorption edge near 1.51eV and that at 15 mA showed absorption edge near 1.47eV. This refers to the presence of an intrinsic defect level which is likely to be deep in the band gap.

Defect pair formation in fluorine and nitrogen codoped TiO2

Science.gov (United States)

Kordatos, A.; Kelaidis, N.; Chroneos, A.

2018-04-01

Titanium oxide is extensively investigated because of its high chemical stability and its photocatalytic properties; nevertheless, the large band gap limits its activity to a small portion of the solar spectrum. Nitrogen and fluorine codoping is an efficient defect engineering strategy to increase the photocatalytic activity of titanium oxide. In the present study, we apply density functional theory to investigate the interaction of nitrogen with fluorine and the formation of defect pairs. We show that in fluorine and nitrogen codoped titanium oxide, the FiNi, FONi, and FiNTi defects can form. Their impact on the electronic structure of titanium oxide is discussed.

Point defects and irradiation in oxides: simulations at the atomic scale; Defauts ponctuels et irradiation dans les oxydes: simulation a l'echelle atomique

Energy Technology Data Exchange (ETDEWEB)

Crocombette, J.P

2005-12-15

The studies done by Jean-Paul Crocombette between 1996 and 2005 in the Service de Recherches de Metallurgie Physique of the Direction de l'Energie Nucleaire in Saclay are presented in this Habilitation thesis. These works were part of the material science researches on the ageing, especially under irradiation, of oxides of interest for the nuclear industry. In this context simulation studies at the atomic scale were performed on two elementary components of ageing under irradiation : point defects and displacement cascades ; using two complementary simulation techniques : ab initio electronic structure calculations and empirical potential molecular dynamics. The first part deals with point defects : self defects (vacancies or interstitials) or hetero-atomic dopants. One first recalls the energetics of such defects in oxides, the specific features of defects calculations and the expected accuracy of these calculations. Then one presents the results obtained on uranium dioxide, oxygen in silver and amorphous silica. The second part tackles the modelling of disintegration recoil nuclei in various?displacement cascades created by crystalline matrices for actinide waste disposal. Cascade calculations give access to the amorphization mechanisms under irradiation of these materials. One thus predicts that the amorphization in zircon takes place directly in the tracks whereas in lanthanum zirconate, the amorphization proceeds through the accumulation of point defects. Finally the prospects of these studies are discussed. (author)

Non-classical polycrystalline silicon thin-film transistor with embedded block-oxide for suppressing the short channel effect

International Nuclear Information System (INIS)

Lin, Jyi-Tsong; Huang, Kuo-Dong; Hu, Shu-Fen

2008-01-01

In this paper, a polycrystalline silicon (polysilicon) thin-film transistor with a block oxide enclosing body, BTFT, is fabricated and investigated. By utilizing the block-oxide structure of thin-film transistors, the BTFT is shown to suppress the short channel effect. This proposed structure is formed by burying self-aligned oxide spacers along the sidewalls of the source and drain junctions, which reduces the P–N junction area, thereby reducing the junction capacitance and leakage current. Measurements demonstrate that the BTFT eliminates the punch-through effect even down to gate lengths of 1.5 µm, whereas the conventional TFT suffers serious short channel effects at this gate length

Short-Term Synaptic Plasticity Regulation in Solution-Gated Indium-Gallium-Zinc-Oxide Electric-Double-Layer Transistors.

Science.gov (United States)

Wan, Chang Jin; Liu, Yang Hui; Zhu, Li Qiang; Feng, Ping; Shi, Yi; Wan, Qing

2016-04-20

In the biological nervous system, synaptic plasticity regulation is based on the modulation of ionic fluxes, and such regulation was regarded as the fundamental mechanism underlying memory and learning. Inspired by such biological strategies, indium-gallium-zinc-oxide (IGZO) electric-double-layer (EDL) transistors gated by aqueous solutions were proposed for synaptic behavior emulations. Short-term synaptic plasticity, such as paired-pulse facilitation, high-pass filtering, and orientation tuning, was experimentally emulated in these EDL transistors. Most importantly, we found that such short-term synaptic plasticity can be effectively regulated by alcohol (ethyl alcohol) and salt (potassium chloride) additives. Our results suggest that solution gated oxide-based EDL transistors could act as the platforms for short-term synaptic plasticity emulation.

Who named the quantum defect?

International Nuclear Information System (INIS)

Rau, A.R.P.; Inokuti, M.

1997-01-01

The notion of the quantum defect is important in atomic and molecular spectroscopy and also in unifying spectroscopy with collision theory. In the latter context, the quantum defect may be viewed as an ancestor of the phase shift. However, the origin of the term quantum defect does not seem to be explained in standard textbooks. It occurred in a 1921 paper by Schroedinger, preceding quantum mechanics, yet giving the correct meaning as an index of the short-range interactions with the core of an atom. The authors present the early history of the quantum-defect idea, and sketch its recent developments

Influence of surface defects on the tensile strength of carbon fibers

Science.gov (United States)

Vautard, F.; Dentzer, J.; Nardin, M.; Schultz, J.; Defoort, B.

2014-12-01

The mechanical properties of carbon fibers, especially their tensile properties, are affected by internal and surface defects. In order to asses in what extent the generation of surface defects can result in a loss of the mechanical properties, non-surface treated carbon fibers were oxidized with three different surface treatment processes: electro-chemical oxidation, oxidation in nitric acid, and oxidation in oxygen plasma. Different surface topographies and surface chemistries were obtained, as well as different types and densities of surface defects. The density of surface defects was measured with both a physical approach (Raman spectroscopy) and a chemical approach (Active Surface Area). The tensile properties were evaluated by determining the Weibull modulus and the scale parameter of each reference, after measuring the tensile strength for four different gauge lengths. A relationship between the tensile properties and the nature and density of surface defects was noticed, as large defects largely control the value of the tensile strength. When optimized, some oxidation surface treatment processes can generate surface functional groups as well as an increase of the mechanical properties of the fibers, because of the removal of the contamination layer of pyrolytic carbon generated during the carbonization of the polyacrylonitrile precursor. Oxidation in oxygen plasma revealed to be a promising technology for alternative surface treatment processes, as high levels of functionalization were achieved and a slight improvement of the mechanical properties was obtained too.

A retrotransposon insertion in the 5' regulatory domain of Ptf1a results in ectopic gene expression and multiple congenital defects in Danforth's short tail mouse.

Directory of Open Access Journals (Sweden)

Francesca Lugani

Full Text Available Danforth's short tail mutant (Sd mouse, first described in 1930, is a classic spontaneous mutant exhibiting defects of the axial skeleton, hindgut, and urogenital system. We used meiotic mapping in 1,497 segregants to localize the mutation to a 42.8-kb intergenic segment on chromosome 2. Resequencing of this region identified an 8.5-kb early retrotransposon (ETn insertion within the highly conserved regulatory sequences upstream of Pancreas Specific Transcription Factor, 1a (Ptf1a. This mutation resulted in up to tenfold increased expression of Ptf1a as compared to wild-type embryos at E9.5 but no detectable changes in the expression levels of other neighboring genes. At E9.5, Sd mutants exhibit ectopic Ptf1a expression in embryonic progenitors of every organ that will manifest a developmental defect: the notochord, the hindgut, and the mesonephric ducts. Moreover, at E 8.5, Sd mutant mice exhibit ectopic Ptf1a expression in the lateral plate mesoderm, tail bud mesenchyme, and in the notochord, preceding the onset of visible defects such as notochord degeneration. The Sd heterozygote phenotype was not ameliorated by Ptf1a haploinsufficiency, further suggesting that the developmental defects result from ectopic expression of Ptf1a. These data identify disruption of the spatio-temporal pattern of Ptf1a expression as the unifying mechanism underlying the multiple congenital defects in Danforth's short tail mouse. This striking example of an enhancer mutation resulting in profound developmental defects suggests that disruption of conserved regulatory elements may also contribute to human malformation syndromes.

Defects in tor regulatory complexes retard aging and carbonyl/oxidative stress development in yeast Sассharomyces cerevisiae

Directory of Open Access Journals (Sweden)

B. V. Homza

2014-02-01

Full Text Available TOR signaling pathway first described in yeast S. сerevisiae is the highly conserved regulator of eukaryotic cell growth, aging and stress resistance. The effect of nitrogen sources, in particular amino acids, on the activity of TOR signaling pathway is well studied, however its relation to carbohydrates is poor understood. The aim of the present study is expanding of our understanding of potential role of TOR regulatory complexes in development of carbonyl/oxidative stress that can result from yeast cultivation on glucose and fructose. It has been shown that the level of α-dicarbonyl compounds and protein carbonyl groups increased with time of yeast cultivation and was higher in cells grown on fructose that demonstrated their accelerated aging and carbonyl/oxidative stress development as compared with cells grown on glucose. The strains defective in TOR proteins cultivated in the presence of glucose as well as fructose demonstrated lower markers of the stress and aging than parental strain. Thus these data confirmed the previous conclusion on fructose more potent ability to cause carbonyl/oxidative stress and accelerated aging in S. cerevisiae as compared with glucose. However, defects in TOR regulatory complexes retard aging and development of the stress in yeast independent on the type of carbohydrate in the cultivation medium.

Anomalous high photoconductivity in short channel indium-zinc-oxide photo-transistors

International Nuclear Information System (INIS)

Choi, Hyun-Sik; Jeon, Sanghun

2015-01-01

Upon light exposure, an indium-zinc-oxide (IZO) thin-film transistor (TFT) presents higher photoconductivity by several orders of magnitude at the negative gate bias region. Among various device geometrical factors, scaling down the channel length of the photo-transistor results in an anomalous increase in photoconductivity. To probe the origin of this high photoconductivity in short-channel device, we measured transient current, current–voltage, and capacitance–voltage characteristics of IZO–TFTs with various channel lengths and widths before and after illumination. Under the illumination, the equilibrium potential region which lies far from front interface exists only in short-channel devices, forming the un-depleted conducting back channel. This region plays an important role in carrier transport under the illumination, leading to high photoconductivity in short-channel devices. Photon exposure coupled with gate-modulated band bending for short-channel devices leads to the accumulation of V o ++ at the front channel and screening negative gate bias, thereby generating high current flow in the un-depleted back-channel region

Visual short-term store can compensate for a defective phonological short-term store in patients with apraxia of speech.

Science.gov (United States)

Silveri, Maria Caterina; Baldonero, Eleonora

2013-11-01

The aim of the study was to investigate whether, within the phonological short-term memory (STM) system, speech articulation disorders primarily due to cortical damage are associated with deficits in the phonological recoding of visual-verbal material, and whether the visual short-term store (STS) can compensate for inefficient access to the phonological STS, as suggested in previous reports. Two patients (AE and TM) with apraxia of speech due to atrophic cerebral damage were administered a battery of tasks devised to explore the organization of the phonological STM. AE's span was normal and TM's span was markedly reduced. Phonological similarity and word-length effects: Both patients showed the effects in visual presentation; the effect was less evident in verbal presentation. This suggests a phonological STS disorder and preserved rehearsal/phonological recoding, consistently with involvement of the left parietal regions, which was documented by the MRI in both patients. Unexpectedly, TM had a longer span for similar than for dissimilar words in visually presented stimuli. Silent phonology (on written material): At variance with controls, stress assignment improved during unattended speech both in AE and TM, while in both patients and controls a detrimental effect of unattended speech was documented in the initial sound task. To account for this unusual pattern of results, we hypothesized that whenever possible, AE and TM adopt the strategy that takes advantage of the visual STM store to compensate for a defective phonological STS. PsycINFO Database Record (c) 2013 APA, all rights reserved.

Investigation of defects in In–Ga–Zn oxide thin film using electron spin resonance signals

International Nuclear Information System (INIS)

Nonaka, Yusuke; Kurosawa, Yoichi; Komatsu, Yoshihiro; Ishihara, Noritaka; Oota, Masashi; Nakashima, Motoki; Hirohashi, Takuya; Takahashi, Masahiro; Yamazaki, Shunpei; Obonai, Toshimitsu; Hosaka, Yasuharu; Koezuka, Junichi; Yamauchi, Jun

2014-01-01

In–Ga–Zn oxide (IGZO) is a next-generation semiconductor material seen as an alternative to silicon. Despite the importance of the controllability of characteristics and the reliability of devices, defects in IGZO have not been fully understood. We investigated defects in IGZO thin films using electron spin resonance (ESR) spectroscopy. In as-sputtered IGZO thin films, we observed an ESR signal which had a g-value of g = 2.010, and the signal was found to disappear under thermal treatment. Annealing in a reductive atmosphere, such as N 2 atmosphere, generated an ESR signal with g = 1.932 in IGZO thin films. The temperature dependence of the latter signal suggests that the signal is induced by delocalized unpaired electrons (i.e., conduction electrons). In fact, a comparison between the conductivity and ESR signal intensity revealed that the signal's intensity is related to the number of conduction electrons in the IGZO thin film. The signal's intensity did not increase with oxygen vacancy alone but also with increases in both oxygen vacancy and hydrogen concentration. In addition, first-principle calculation suggests that the conduction electrons in IGZO may be generated by defects that occur when hydrogen atoms are inserted into oxygen vacancies

Investigation of defects in In–Ga–Zn oxide thin film using electron spin resonance signals

Energy Technology Data Exchange (ETDEWEB)

Nonaka, Yusuke; Kurosawa, Yoichi; Komatsu, Yoshihiro; Ishihara, Noritaka; Oota, Masashi; Nakashima, Motoki; Hirohashi, Takuya; Takahashi, Masahiro; Yamazaki, Shunpei [Semiconductor Energy Laboratory Co., Ltd., 398 Hase, Atsugi, Kanagawa 243-0036 (Japan); Obonai, Toshimitsu; Hosaka, Yasuharu; Koezuka, Junichi [Advanced Film Device, Inc., 161-2 Masuzuka, Tsuga-machi, Tochigi, Tochigi 328-0114 (Japan); Yamauchi, Jun [Semiconductor Energy Laboratory Co., Ltd., 398 Hase, Atsugi, Kanagawa 243-0036 (Japan); Emeritus Professor of Kyoto University, Oiwake-cho, Kitashirakawa, Kyoto 606-8502 (Japan)

2014-04-28

In–Ga–Zn oxide (IGZO) is a next-generation semiconductor material seen as an alternative to silicon. Despite the importance of the controllability of characteristics and the reliability of devices, defects in IGZO have not been fully understood. We investigated defects in IGZO thin films using electron spin resonance (ESR) spectroscopy. In as-sputtered IGZO thin films, we observed an ESR signal which had a g-value of g = 2.010, and the signal was found to disappear under thermal treatment. Annealing in a reductive atmosphere, such as N{sub 2} atmosphere, generated an ESR signal with g = 1.932 in IGZO thin films. The temperature dependence of the latter signal suggests that the signal is induced by delocalized unpaired electrons (i.e., conduction electrons). In fact, a comparison between the conductivity and ESR signal intensity revealed that the signal's intensity is related to the number of conduction electrons in the IGZO thin film. The signal's intensity did not increase with oxygen vacancy alone but also with increases in both oxygen vacancy and hydrogen concentration. In addition, first-principle calculation suggests that the conduction electrons in IGZO may be generated by defects that occur when hydrogen atoms are inserted into oxygen vacancies.

3D imaging of intrinsic crystalline defects in zinc oxide by spectrally resolved two-photon fluorescence microscopy

Science.gov (United States)

Al-Tabich, A.; Inami, W.; Kawata, Y.; Jablonski, R.; Worasawat, S.; Mimura, H.

2017-05-01

We present a method for three-dimensional intrinsic defect imaging in zinc oxide (ZnO) by spectrally resolved two-photon fluorescence microscopy, based on the previously presented method of observing a photoluminescence distribution in wide-gap semiconductor crystals [Noor et al., Appl. Phys. Lett. 92(16), 161106 (2008)]. A tightly focused light beam radiated by a titanium-sapphire laser is used to obtain a two-photon excitation of selected area of the ZnO sample. Photoluminescence intensity of a specific spectral range is then selected by optical band pass filters and measured by a photomultiplier tube. Reconstruction of the specimen image is done by scanning the volume of interest by a piezoelectric positioning stage and measuring the spectrally resolved photoluminescence intensity at each point. The method has been proved to be effective at locating intrinsic defects of the ZnO crystalline structure in the volume of the crystal. The method was compared with other defect imaging and 3D imaging techniques like scanning tunneling microscopy and confocal microscopy. In both cases, our method shows superior penetration abilities and, as the only method, allows location of the defects of the chosen type in 3D. In this paper, we present the results of oxygen vacancies and zinc antisites imaging in ZnO nanorods.

A case of osteomalacia due to deranged mineral balance caused by saccharated ferric oxide and short-bowel syndrome: A case report.

Science.gov (United States)

Nomoto, Hiroshi; Miyoshi, Hideaki; Nakamura, Akinobu; Nagai, So; Kitao, Naoyuki; Shimizu, Chikara; Atsumi, Tatsuya

2017-09-01

Saccharated ferric oxide has been shown to lead to elevation of fibroblast growth factor 23, hypophosphatemia, and, consequently, osteomalacia. Moreover, mineral imbalance is often observed in patients with short-bowel syndrome to some degree. A 62-year-old woman with short-bowel syndrome related with multiple resections of small intestines due to Crohn disease received regular intravenous administration of saccharated ferric oxide. Over the course of treatment, she was diagnosed with tetany, which was attributed to hypocalcemia. Additional assessments of the patient revealed not only hypocalcemia, but also hypophosphatemia, hypomagnesemia, osteomalacia, and a high concentration of fibroblast growth factor 23 (314 pg/mL). We diagnosed her with mineral imbalance-induced osteomalacia due to saccharated ferric oxide and short-bowel syndrome. Magnesium replacement therapy and discontinuation of saccharated ferric oxide alone. These treatments were able to normalize her serum mineral levels and increase her bone mineral density. This case suggests that adequate evaluation of serum minerals, including phosphate and magnesium, during saccharated ferric oxide administration may be necessary, especially in patients with short-bowel syndrome.

Electrochemical behavior of thin anodic oxide films on Zircaloy-4: Role of the mobile defects

International Nuclear Information System (INIS)

Salot, R.; Lefebvre-Joud, F.; Baroux, B.

1996-01-01

The first stages of the electrochemical oxidation of Zircaloy-4 are investigated using simple electrochemical tests and modeling the passive film modifications occurring as a result of contact with the electrolyte. Variations in electrode potential (open-circuit conditions) or current density (potentiodynamic scans) can be simply explained by a high field (F ∼ 10 6 V/cm) assisted passive film growth. Under open-circuit conditions, this field does not vary with exposure time (in the 2 h to 48 h range). The minimum electric field for the onset of high-field behavior is also evaluated and found smaller than the theoretical value which can be explained by a variation in the concentration of mobile defects throughout the film. Measurements of the electrode potential decay after a potentiodynamic scan confirm this model, allowing interpretation of the film modification as a combination of two separate phenomena: film growth under a high electric field and point defect annihilation

Point defects and oxidation mechanism in cubic boron nitride

International Nuclear Information System (INIS)

Gorshin, A.P.; Shvajko-Shvajkovskij, V.E.

1994-01-01

A theoretical analysis of the defect formation in boron nitride by the Schottky mechanism within the framework of the quasi-chemical approximation method is carried out. On the base of solution of the disordering equations at different conditions of electroneutrality are obtained the dependences of defect concentrations in β-BN on the partial nitrogen pressure in equilibrium conditions. Experimental checking of the theoretical analysis proposed confirms the hypothesis on the presence of defects of nonstoichiometric origin in the β-BN anion sublattice

On an aspect of kinetics both defects accumulation and gas absorption in an irradiated metals oxides

International Nuclear Information System (INIS)

Tuseev, T.; Polyakov, A.I.; Bitenbaev, M.I.

2001-01-01

In the work an analysis of experimental data during study both gases adsorption processes and radiation defects accumulation in irradiated (ultraviolet, gamma-, neutron-, alpha-particle- and proton radiation) in the oxides (SiO 2 , Al 2 O 3 , BeO, Se 2 O 3 , Dy 2 O 3 , La 2 O 3 , Er 2 O 3 ) is carried out. It is determined, that these processes are correlating with each other and equivalent kinetic equations for its description are proposed

Defect engineering of the electronic transport through cuprous oxide interlayers

KAUST Repository

Fadlallah, Mohamed M.

2016-06-03

The electronic transport through Au–(Cu2O)n–Au junctions is investigated using first-principles calculations and the nonequilibrium Green’s function method. The effect of varying the thickness (i.e., n) is studied as well as that of point defects and anion substitution. For all Cu2O thicknesses the conductance is more enhanced by bulk-like (in contrast to near-interface) defects, with the exception of O vacancies and Cl substitutional defects. A similar transmission behavior results from Cu deficiency and N substitution, as well as from Cl substitution and N interstitials for thick Cu2O junctions. In agreement with recent experimental observations, it is found that N and Cl doping enhances the conductance. A Frenkel defect, i.e., a superposition of an O interstitial and O substitutional defect, leads to a remarkably high conductance. From the analysis of the defect formation energies, Cu vacancies are found to be particularly stable, in agreement with earlier experimental and theoretical work.

Defect Characterization of Pyroelectric Materials

National Research Council Canada - National Science Library

Keeble, David

2002-01-01

Two methods for identify point defects applicable to the study of technologically relevant pyroelectric oxide materials have been investigated, namely Positron Annihilation Lifetime Spectroscopy (PALS...

Modulation of mitochondrial morphology by bioenergetics defects in primary human fibroblasts

DEFF Research Database (Denmark)

Guillery, O.; Malka, F.; Frachon, P.

2008-01-01

induced partial but significant mitochondrial fragmentation, whereas dissipation of mitochondrial membrane potential (D Psi m) provoked complete fragmentation, and glycolysis inhibition had no effect. Oxidative phosphorylation defective fibroblasts had essentially normal filamentous mitochondria under...... basal conditions, although when challenged some of them presented with mild alteration of fission or fusion efficacy. Severely defective cells disclosed complete mitochondrial fragmentation under glycolysis inhibition. In conclusion, mitochondrial morphology is modulated by D Psi m but loosely linked...... to mitochondrial oxidative phosphorylation. Its alteration by glycolysis, inhibition points to a severe oxidative phosphorylation defect. (C) 2008 Elsevier B.V. All rights reserved Udgivelsesdato: 2008/4...

Short-term outcomes of transcatheter closure of secundum atrial septal defect in children and adolescents: An experience of two centers in Upper Egypt

Directory of Open Access Journals (Sweden)

Safaa H. Ali

2018-01-01

Conclusions: Transcatheter closure of ASDs in children and adolescents was feasible and safe in the first 4 years experience in our centers, with good short-term outcome. Balloon sizing is not necessary for transcatheter closure of secundum ASD. Multiple defects can be safety closed by a single device.

Point defects and defect clusters examined on the basis of some fundamental experiments

International Nuclear Information System (INIS)

Zuppiroli, L.

1975-01-01

On progressing from the centre of the defect to the surface the theoretical approach to a point defect passes from electronic theories to elastic theory. Experiments by which the point defect can be observed fall into two categories. Those which detect long-range effects: measurement of dimensional variations in the sample; measurement of the mean crystal parameter variation; elastic X-ray scattering near the nodes of the reciprocal lattice (Huang scattering). Those which detect more local effects: low-temperature resistivity measurement; positron capture and annihilation; local scattering far from the reciprocal lattice nodes. Experiments involving both short and long-range effects can always be found. This is the case for example with the dechanneling of α particles by defects. Certain of the experimental methods quoted above apply also to the study of point defect clusters. These methods are illustrated by some of their most striking results which over the last twenty years have refined our knowledge of point defects and defect clusters: length and crystal parameter measurements; diffuse X-ray scattering; low-temperature resistivity measurements; ion emission microscopy; electron microscopy; elastoresistivity [fr

Strained interface defects in silicon nanocrystals

Energy Technology Data Exchange (ETDEWEB)

Lee, Benjamin G.; Stradins, Paul [National Center for Photovoltaics, National Renewable Energy Laboratory, Golden, CO (United States); Hiller, Daniel; Zacharias, Margit [IMTEK - Faculty of Engineering, Albert-Ludwigs-University Freiburg (Germany); Luo, Jun-Wei; Beard, Matthew C. [Chemical and Materials Science, National Renewable Energy Laboratory, Golden, CO (United States); Semonin, Octavi E. [Chemical and Materials Science, National Renewable Energy Laboratory, Golden, CO (United States); Department of Physics, University of Colorado, Boulder, CO (United States)

2012-08-07

The surface of silicon nanocrystals embedded in an oxide matrix can contain numerous interface defects. These defects strongly affect the nanocrystals' photoluminescence efficiency and optical absorption. Dangling-bond defects are nearly eliminated by H{sub 2} passivation, thus decreasing absorption below the quantum-confined bandgap and enhancing PL efficiency by an order of magnitude. However, there remain numerous other defects seen in absorption by photothermal deflection spectroscopy; these defects cause non-radiative recombination that limits the PL efficiency to <15%. Using atomistic pseudopotential simulations, we attribute these defects to two specific types of distorted bonds: Si-Si and bridging Si-O-Si bonds between two Si atoms at the nanocrystal surface. (Copyright copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Synthesis and characterization of magnesium oxide nanocrystallites and probing the vacancy-type defects through positron annihilation studies

Science.gov (United States)

Das, Anjan; Mandal, Atis Chandra; Roy, Soma; Prashanth, Pendem; Ahamed, Sk Izaz; Kar, Subhrasmita; Prasad, Mithun S.; Nambissan, P. M. G.

2016-09-01

Magnesium oxide nanocrystallites exhibit certain abnormal characteristics when compared to those of other wide band gap oxide semiconductors in the sense they are most prone to water absorption and formation of a hydroxide layer on the surface. The problem can be rectified by heating and pure nanocrystallites can be synthesized with controllable sizes. Inevitably the defect properties are distinctly divided between two stages, the one with the hydroxide layer (region I) and the other after the removal of the layer by annealing (region II). The lattice parameters, the optical band gap and even the positron annihilation characteristics are conspicuous by their distinct behavior in the two stages of the surface configurations of nanoparticles. While region I was specific with the formation of positronium-hydrogen complexes that drastically altered the defect-specific positron lifetimes, pick-off annihilation of orthopositronium atoms marked region II. The vacancy clusters within the nanocrystallites also trapped positrons. They agglomerated due to the effect of the higher temperatures and resulted in the growth of the nanocrystallites. The coincidence Doppler broadening spectroscopic measurements supported these findings and all the more indicated the trapping of positrons additionally into the neutral divacancies and negatively charged trivacancies. This is apart from the Mg2+ monovacancies which acted as the dominant trapping centers for positrons.

Importance of doping, dopant distribution, and defects on electronic band structure alteration of metal oxide nanoparticles: Implications for reactive oxygen species

International Nuclear Information System (INIS)

Saleh, Navid B.; Milliron, Delia J.; Aich, Nirupam; Katz, Lynn E.; Liljestrand, Howard M.; Kirisits, Mary Jo

2016-01-01

Metal oxide nanoparticles (MONPs) are considered to have the potency to generate reactive oxygen species (ROS), one of the key mechanisms underlying nanotoxicity. However, the nanotoxicology literature demonstrates a lack of consensus on the dominant toxicity mechanism(s) for a particular MONP. Moreover, recent literature has studied the correlation between band structure of pristine MONPs to their ability to introduce ROS and thus has downplayed the ROS-mediated toxicological relevance of a number of such materials. On the other hand, material science can control the band structure of these materials to engineer their electronic and optical properties and thereby is constantly modulating the pristine electronic structure. Since band structure is the fundamental material property that controls ROS-producing ability, band tuning via introduction of dopants and defects needs careful consideration in toxicity assessments. This commentary critically evaluates the existing material science and nanotoxicity literature and identifies the gap in our understanding of the role of important crystal structure features (i.e., dopants and defects) on MONPs' electronic structure alteration as well as their ROS-generation capability. Furthermore, this commentary provides suggestions on characterization techniques to evaluate dopants and defects on the crystal structure and identifies research needs for advanced theoretical predictions of their electronic band structures and ROS-generation abilities. Correlation of electronic band structure and ROS will not only aid in better mechanistic assessment of nanotoxicity but will be impactful in designing and developing ROS-based applications ranging from water disinfection to next-generation antibiotics and even cancer therapeutics. - Highlights: • Metal oxide nanoparticles (MONPs) produce reactive oxygen species (ROS) • Band structure of pristine MONPs is different than those with dopants/defects • Dopants/defects modulate

Importance of doping, dopant distribution, and defects on electronic band structure alteration of metal oxide nanoparticles: Implications for reactive oxygen species

Energy Technology Data Exchange (ETDEWEB)

Saleh, Navid B., E-mail: navid.saleh@utexas.edu [Department of Civil, Architectural, and Environmental Engineering, University of Texas, Austin, TX 78712 (United States); Milliron, Delia J. [McKetta Department of Chemical Engineering, University of Texas, Austin, TX 78712 (United States); Aich, Nirupam [Department of Civil, Structural and Environmental Engineering, University at Buffalo, The State University of New York, Buffalo, NY, 14260 (United States); Katz, Lynn E.; Liljestrand, Howard M.; Kirisits, Mary Jo [Department of Civil, Architectural, and Environmental Engineering, University of Texas, Austin, TX 78712 (United States)

2016-10-15

Metal oxide nanoparticles (MONPs) are considered to have the potency to generate reactive oxygen species (ROS), one of the key mechanisms underlying nanotoxicity. However, the nanotoxicology literature demonstrates a lack of consensus on the dominant toxicity mechanism(s) for a particular MONP. Moreover, recent literature has studied the correlation between band structure of pristine MONPs to their ability to introduce ROS and thus has downplayed the ROS-mediated toxicological relevance of a number of such materials. On the other hand, material science can control the band structure of these materials to engineer their electronic and optical properties and thereby is constantly modulating the pristine electronic structure. Since band structure is the fundamental material property that controls ROS-producing ability, band tuning via introduction of dopants and defects needs careful consideration in toxicity assessments. This commentary critically evaluates the existing material science and nanotoxicity literature and identifies the gap in our understanding of the role of important crystal structure features (i.e., dopants and defects) on MONPs' electronic structure alteration as well as their ROS-generation capability. Furthermore, this commentary provides suggestions on characterization techniques to evaluate dopants and defects on the crystal structure and identifies research needs for advanced theoretical predictions of their electronic band structures and ROS-generation abilities. Correlation of electronic band structure and ROS will not only aid in better mechanistic assessment of nanotoxicity but will be impactful in designing and developing ROS-based applications ranging from water disinfection to next-generation antibiotics and even cancer therapeutics. - Highlights: • Metal oxide nanoparticles (MONPs) produce reactive oxygen species (ROS) • Band structure of pristine MONPs is different than those with dopants/defects • Dopants/defects modulate

Chitosan-Graphene Oxide 3D scaffolds as Promising Tools for Bone Regeneration in Critical-Size Mouse Calvarial Defects.

Science.gov (United States)

Hermenean, Anca; Codreanu, Ada; Herman, Hildegard; Balta, Cornel; Rosu, Marcel; Mihali, Ciprian Valentin; Ivan, Alexandra; Dinescu, Sorina; Ionita, Mariana; Costache, Marieta

2017-11-30

Limited self-regenerating capacity of human skeleton makes the reconstruction of critical size bone defect a significant challenge for clinical practice. Aimed for regenerating bone tissues, this study was designed to investigate osteogenic differentiation, along with bone repair capacity of 3D chitosan (CHT) scaffolds enriched with graphene oxide (GO) in critical-sized mouse calvarial defect. Histopathological/histomorphometry and scanning electron microscopy(SEM) analysis of the implants revealed larger amount of new bone in the CHT/GO-filled defects compared with CHT alone (p < 0.001). When combined with GO, CHT scaffolds synergistically promoted the increase of alkaline phosphatase activity both in vitro and in vivo experiments. This enhanced osteogenesis was corroborated with increased expression of bone morphogenetic protein (BMP) and Runx-2 up to week 4 post-implantation, which showed that GO facilitates the differentiation of osteoprogenitor cells. Meanwhile, osteogenesis was promoted by GO at the late stage as well, as indicated by the up-regulation of osteopontin and osteocalcin at week 8 and overexpressed at week 18, for both markers. Our data suggest that CHT/GO biomaterial could represent a promising tool for the reconstruction of large bone defects, without using exogenous living cells or growth factors.

Synthesis, structuring and characterization of rare earth oxide thin films: Modeling of the effects of stress and defects on the phase stability

International Nuclear Information System (INIS)

Gaboriaud, R.J.; Paumier, F.; Lacroix, B.

2014-01-01

This work studies the effects of the deposition parameters on the microstructure and the related residual stress in a rare earth oxide thin film. This study is focused on the yttrium sesquioxide (Y 2 O 3 ) thin films deposited on Si (100) substrates using the ion beam sputtering technique. This technique allows the control of the microstructure and the related residual stress in the thin films by monitoring the energy of the argon beam used in the deposition process. Measurements of the stresses within the oxide layer were performed by the X-ray diffraction-sin 2 Ψ method. The results show that the classic model of a pure biaxial in-plane model of stress, generally proposed in thin films, is not satisfying. A model that includes a hydrostatic stress due to the crystalline defects generated during the deposition process and a biaxial stress called a fixation stress, gives a good agreement with the experimental results. This modeling of the residual stress, based on nanometer-scale inclusions (point, extended defects) inducing a hydrostatic stress field, leads to a quantitative analysis of the nature and the concentration of the defects. This work shows results that establish a relationship between residual stress, defects and non-equilibrium phase stabilization during growth. - Highlights: • Microstructure of Y 2 O 3 thin films • Measurements of residual stresses in the thin films • Modeling of a triaxial residual stress state • Stress-induced stabilization of non-equilibrium phase

Catalytic Oxidation of CO and Soot over Ce-Zr-Pr Mixed Oxides Synthesized in a Multi-Inlet Vortex Reactor: Effect of Structural Defects on the Catalytic Activity.

Science.gov (United States)

Bensaid, Samir; Piumetti, Marco; Novara, Chiara; Giorgis, Fabrizio; Chiodoni, Angelica; Russo, Nunzio; Fino, Debora

2016-12-01

In the present work, ceria, ceria-zirconia (Ce = 80 at.%, Zr = 20 at.%), ceria praseodymia (Ce = 80 at.%, Pr = 20 at.%) and ceria-zirconia-praseodymia catalysts (Ce = 80 at.%, Zr = 10 at.% and Pr = 10 at.%) have been prepared by the multi-inlet vortex reactor (MIVR). For each set of samples, two inlet flow rates have been used during the synthesis (namely, 2 ml min -1 , and 20 ml min -1 ) in order to obtain different particle sizes. Catalytic activity of the prepared materials has been investigated for CO and soot oxidation reactions. As a result, when the catalysts exhibit similar crystallite sizes (in the 7.7-8.8 nm range), it is possible to observe a direct correlation between the O v /F 2g vibrational band intensity ratios and the catalytic performance for the CO oxidation. This means that structural (superficial) defects play a key role for this process. The incorporation of Zr and Pr species into the ceria lattice increases the population of structural defects, as measured by Raman spectroscopy, according to the order: CeO 2  oxidation activity for these catalysts, in contrast with nanostructured ones (e.g., Ce-Zr-O nanopolyhedra, Ce-Pr-O nanocubes) described elsewhere (Andana et al. Appl. Catal. B 197: 125-137, 2016; Piumetti et al., Appl Catal B 180: 271-282, 2016).

The effect of sepsis and short-term exposure to nitrous oxide on the ...

African Journals Online (AJOL)

It is recognised that prolonged anaesthesia with nitrous oxide (N20) induces megaloblastic anaemia by oxidising vitamin B12 To determine whether sepsis aggravates the effect of H20 on haemopoiesis 5 patients with severe sepsis, who required surgery and were exposed to short-term (45 - 105 minutes) N20 anaesthesia, ...

Defect states and room temperature ferromagnetism in cerium oxide nanopowders prepared by decomposition of Ce-propionate

DEFF Research Database (Denmark)

Mihalache, V.; Grivel, J. C.; Secu, M.

2018-01-01

. An improvement of ferromagnetism and intensity of defect-related PL emission was observed when annealing the products in which nanocrystalline cerium oxide coexists with Ce - oxicarbonate traces, Ce2O2CO3. The experimental results were explained based on the following considerations: room temperature......Four batches of cerium oxide powders (with nanocrystallite size of 6.9 nm–572 nm) were prepared from four precursor nanopowders by thermal decomposition of Ce-propionate and annealing in air between 250 °C–1200 °C for 10 min–240 min. Ceria formation reactions, structure, vibrational, luminescence...... and magnetic properties were investigated by differential scanning calorimetry, x-ray diffraction, electron microscopy, infrared spectroscopy, photoluminescence and SQUID. All the samples exhibit room temperature ferromagnetism, RTFM, (with coercivity, Hc, of 8 Oe - 121 Oe and saturation magnetization, Ms...

Study on the intrinsic defects in tin oxide with first-principles method

Science.gov (United States)

Sun, Yu; Liu, Tingyu; Chang, Qiuxiang; Ma, Changmin

2018-04-01

First-principles and thermodynamic methods are used to study the contribution of vibrational entropy to defect formation energy and the stability of the intrinsic point defects in SnO2 crystal. According to thermodynamic calculation results, the contribution of vibrational entropy to defect formation energy is significant and should not be neglected, especially at high temperatures. The calculated results indicate that the oxygen vacancy is the major point defect in undoped SnO2 crystal, which has a higher concentration than that of the other point defect. The property of negative-U is put forward in SnO2 crystal. In order to determine the most stable defects much clearer under different conditions, the most stable intrinsic defect as a function of Fermi level, oxygen partial pressure and temperature are described in the three-dimensional defect formation enthalpy diagrams. The diagram visually provides the most stable point defects under different conditions.

Direct observation of short-circuit diffusion during the formation of a single cupric oxide nanowire

International Nuclear Information System (INIS)

Cheng, C-L; Ma, Y-R; Chou, M H; Huang, C Y; Yeh, V; Wu, S Y

2007-01-01

Short-circuit diffusion was observed in a single CuO nanowire synthesized using a thermal oxidation method. The confocal Raman spectra of a single CuO nanowire permit direct observation of the nature of an individual CuO nanowire. The parameter order obtained from the inverse Raman B g 2 peak linewidth results in the length dependence of the linewidth and a short-circuit diffusion length of 3.3 μm. The observed structural information is also consistent with the energy dispersive x-ray spectroscopic mapping. The results confirm that the growth of CuO nanowires occurs through the short-circuit diffusion mechanism

Neutron cross sections for defect production by high energy displacement cascades in copper

International Nuclear Information System (INIS)

Heinisch, H.L.; Mann, F.M.

1984-01-01

Defect production cross sections for copper have been devised, based on computer simulations of displacement cascades. One thousand cascades ranging in energy from 200 eV to 200 keV were generated with the MARLOWE computer code. The cascades were subjected to a semi-empirical cascade quenching procedure and to short-term annealing with the ALSOME computer code. Functions were fitted to the numbers of defects produced as a function of primary knock-on atom (PKA) damage energy for the following defect types: 1) the total number of point defects after quenching and after short-term annealing, 2) the numbers of free interstitials and free vacancies after short-term annealing, and 3) the numbers and sizes of vacancy and interstitial clusters after short-term annealing. In addition, a function describing the number of distinct damage regions (lobes) per cascade was fitted to results of a graphical analysis of the cascade configurations. The defect production functions have been folded into PKA spectra using the NJOY nuclear data processing code system with ENDF/B-V nuclear data to yield neutron cross sections for defect production in copper. The free vacancy cross section displays much less variation with neutron energy than the cross sections for damage energy or total point defects. (orig.)

Issues in first-principles calculations for defects in semiconductors and oxides

International Nuclear Information System (INIS)

Nieminen, Risto M

2009-01-01

Recent advances in density-functional theory (DFT) calculations of defect electronic properties in semiconductors and insulators are discussed. In particular, two issues are addressed: the band-gap underestimation of standard density-functional methods with its harmful consequences for the positioning of defect-related levels in the band-gap region, and the slow convergence of calculated defect properties when the periodic supercell approach is used. Systematic remedies for both of these deficiencies are now available, and are being implemented in the context of popular DFT codes. This should help in improving the parameter-free accuracy and thus the predictive power of the methods to enable unambiguous explanation of defect-related experimental observations. These include not only the various fingerprint spectroscopies for defects but also their thermochemistry and dynamics, i.e. the temperature-dependent concentration and diffusivities of defects under various doping conditions and in different stoichiometries

Structural organization of the human short-chain acyl-CoA dehydrogenase gene

DEFF Research Database (Denmark)

Corydon, M J; Andresen, B S; Bross, P

1997-01-01

Short-chain acyl-CoA dehydrogenase (SCAD) is a homotetrameric mitochondrial flavoenzyme that catalyzes the initial reaction in short-chain fatty acid beta-oxidation. Defects in the SCAD enzyme are associated with failure to thrive, often with neuromuscular dysfunction and elevated urinary excretion...... shown to be associated with ethylmalonic aciduria. From analysis of 18 unrelated Danish families, we show that the four SCAD gene polymorphisms constitute five allelic variants of the SCAD gene, and that the 625A variant together with the less frequent variant form of the three other polymorphisms (321C....... The evolutionary relationship between SCAD and five other members of the acyl-CoA dehydrogenase family was investigated by two independent approaches that gave similar phylogenetic trees....

Surface Oxidation of the High-Strength Steels Electrodeposited with Cu or Fe and the Resultant Defect Formation in Their Coating during the Following Galvanizing and Galvannealing Processes

Science.gov (United States)

Choi, Yun-Il; Beom, Won-Jin; Park, Chan-Jin; Paik, Doojin; Hong, Moon-Hi

2010-12-01

This study examined the surface oxidation of high-strength steels electrodeposited with Cu or Fe and the resultant defect formation in their coating during the following galvanizing and galvannealing processes. The high-strength steels were coated with an Cu or Fe layer by the electroplating method. Then, the coated steels were annealed in a reducing atmosphere, dipped in a molten zinc, and finally transformed into galvannealed steels through the galvannealing process. The formation of Si and Mn oxides on the surface of the high-strength steel was effectively suppressed, and the density of surface defects on the galvanized steel was significantly reduced by the pre-electrodeposition of Cu and Fe. This effect was more prominent for the steels electrodeposited at higher cathodic current densities. The finer electrodeposit layer formed at higher cathodic current density on the steels enabled the suppression of partial surface oxidation by Mn or Si and better wetting of Zn on the surface of the steels in the following galvanizing process. Furthermore, the pre-electrodeposited steels exhibited a smoother surface without surface cracks after the galvannealing process compared with the untreated steel. The diffusion of Fe and Zn in the Zn coating layer in the pre-electrodeposited steels appears to occur more uniformly during the galvannealing process due to the low density of surface defects induced by oxides.

The effect of defects on the catalytic activity of single Au atom supported carbon nanotubes and reaction mechanism for CO oxidation.

Science.gov (United States)

Ali, Sajjad; Fu Liu, Tian; Lian, Zan; Li, Bo; Sheng Su, Dang

2017-08-23

The mechanism of CO oxidation by O 2 on a single Au atom supported on pristine, mono atom vacancy (m), di atom vacancy (di) and the Stone Wales defect (SW) on single walled carbon nanotube (SWCNT) surface is systematically investigated theoretically using density functional theory. We determine that single Au atoms can be trapped effectively by the defects on SWCNTs. The defects on SWCNTs can enhance both the binding strength and catalytic activity of the supported single Au atom. Fundamental aspects such as adsorption energy and charge transfer are elucidated to analyze the adsorption properties of CO and O 2 and co-adsorption of CO and O 2 molecules. It is found that CO binds stronger than O 2 on Au supported SWCNT. We clearly demonstrate that the defected SWCNT surface promotes electron transfer from the supported single Au atom to O 2 molecules. On the other hand, this effect is weaker for pristine SWCNTs. It is observed that the high density of spin-polarized states are localized in the region of the Fermi level due to the strong interactions between Au (5d orbital) and the adjacent carbon (2p orbital) atoms, which influence the catalytic performance. In addition, we elucidate both the Langmuir-Hinshelwood (LH) and Eley-Rideal (ER) mechanisms of CO oxidation by O 2 . For the LH pathway, the barriers of the rate-limiting step are calculated to be 0.02 eV and 0.05 eV for Au/m-SWCNT and Au/di-SWCNT, respectively. To regenerate the active sites, an ER-like reaction occurs to form a second CO 2 molecule. The ER pathway is observed on Au/m-SWCNT, Au/SW-SWCNT and Au/SWCNT in which the Au/m-SWCNT has a smaller barrier. The comparison with a previous study (Lu et al., J. Phys. Chem. C, 2009, 113, 20156-20160.) indicates that the curvature effect of SWCNTs is important for the catalytic property of the supported single Au. Overall, Au/m-SWCNT is identified as the most active catalyst for CO oxidation compared to pristine SWCNT, SW-SWCNT and di-SWCNT. Our findings give a

Short-term and long-term effects of transient exogenous cortisol manipulation on oxidative stress in juvenile brown trout

DEFF Research Database (Denmark)

Birnie-Gauvin, Kim; Peiman, Kathryn S.; Larsen, Martin Hage

2017-01-01

available for physiological functions like defence against oxidative stress. Using brown trout (Salmo trutta), we evaluated the short-term (2 weeks) and long-term (4 months over winter) effects of exogenous cortisol manipulations (versus relevant shams and controls) on the oxidative status of wild juveniles...

A point defect model for the general and pitting corrosion on iron-oxide-electrolyte interface deduced from current oscillations

CERN Document Server

Pagitsas, M; Sazou, D

2003-01-01

Analysis of the passive-active oscillatory region of the Fe-0.75 M H sub 2 SO sub 4 system, perturbed by adding small amounts of halide species, allow the distinction between pitting and general corrosion. Complex periodic and aperiodic current oscillations characterize pitting corrosion whereas monoperiodic oscillations of a relaxation type indicate general corrosion. A point defect model (PDM) is considered for the microscopic description of the growth and breakdown of the iron oxide film. The physicochemical processes leading to different types of corrosion can be clarified in terms of the PDM. Occupation of an anion vacancy by a halide ion results in the localized attack of the passive oxide and pitting corrosion. On the other hand, the formation of surface soluble iron complexes is related to the uniform dissolution of the passive oxide and general corrosion.

Charged Semiconductor Defects Structure, Thermodynamics and Diffusion

CERN Document Server

Seebauer, Edmund G

2009-01-01

The technologically useful properties of a solid often depend upon the types and concentrations of the defects it contains. Not surprisingly, defects in semiconductors have been studied for many years, in many cases with a view towards controlling their behavior through various forms of "defect engineering." For example, in the bulk, charging significantly affects the total concentration of defects that are available to mediate phenomena such as solid-state diffusion. Surface defects play an important role in mediating surface mass transport during high temperature processing steps such as epitaxial film deposition, diffusional smoothing in reflow, and nanostructure formation in memory device fabrication. Charged Semiconductor Defects details the current state of knowledge regarding the properties of the ionized defects that can affect the behavior of advanced transistors, photo-active devices, catalysts, and sensors. Features: Group IV, III-V, and oxide semiconductors; Intrinsic and extrinsic defects; and, P...

Characterization and evaluation of graphene oxide scaffold for periodontal wound healing of class II furcation defects in dog.

Science.gov (United States)

Kawamoto, Kohei; Miyaji, Hirofumi; Nishida, Erika; Miyata, Saori; Kato, Akihito; Tateyama, Akito; Furihata, Tomokazu; Shitomi, Kanako; Iwanaga, Toshihiko; Sugaya, Tsutomu

2018-01-01

The 3-dimensional scaffold plays a key role in volume and quality of repair tissue in periodontal tissue engineering therapy. We fabricated a novel 3D collagen scaffold containing carbon-based 2-dimensional layered material, named graphene oxide (GO). The aim of this study was to characterize and assess GO scaffold for periodontal tissue healing of class II furcation defects in dog. GO scaffolds were prepared by coating the surface of a 3D collagen sponge scaffold with GO dispersion. Scaffolds were characterized using cytotoxicity and tissue reactivity tests. In addition, GO scaffold was implanted into dog class II furcation defects and periodontal healing was investigated at 4 weeks postsurgery. GO scaffold exhibited low cytotoxicity and enhanced cellular ingrowth behavior and rat bone forming ability. In addition, GO scaffold stimulated healing of dog class II furcation defects. Periodontal attachment formation, including alveolar bone, periodontal ligament-like tissue, and cementum-like tissue, was significantly increased by GO scaffold implantation, compared with untreated scaffold. The results suggest that GO scaffold is biocompatible and possesses excellent bone and periodontal tissue formation ability. Therefore, GO scaffold would be beneficial for periodontal tissue engineering therapy.

Coffee-Ring Defined Short Channels for Inkjet-Printed Metal Oxide Thin-Film Transistors.

Science.gov (United States)

Li, Yuzhi; Lan, Linfeng; Xiao, Peng; Sun, Sheng; Lin, Zhenguo; Song, Wei; Song, Erlong; Gao, Peixiong; Wu, Weijing; Peng, Junbiao

2016-08-03

Short-channel electronic devices several micrometers in length are difficult to implement by direct inkjet printing due to the limitation of position accuracy of the common inkjet printer system and the spread of functional ink on substrates. In this report, metal oxide thin-film transistors (TFTs) with channel lengths of 3.5 ± 0.7 μm were successfully fabricated with a common inkjet printer without any photolithography steps. Hydrophobic CYTOP coffee stripes, made by inkjet-printing and plasma-treating processes, were utilized to define the channel area of TFTs with channel lengths as short as ∼3.5 μm by dewetting the inks of the source/drain (S/D) precursors. Furthermore, by introduction of an ultrathin layer of PVA to modify the S/D surfaces, the spreading of precursor ink of the InOx semiconductor layer was well-controlled. The inkjet-printed short-channel TFTs exhibited a maximum mobility of 4.9 cm(2) V(-1) s(-1) and an on/off ratio of larger than 10(9). This approach of fabricating short-channel TFTs by inkjet printing will promote the large-area fabrication of short-channel TFTs in a cost-effective manner.

Influence of Short-time Oxidation on Corrosion Properties of Directionally Solidified Superalloys with Different Orientations

Directory of Open Access Journals (Sweden)

MA Luo-ning

2016-07-01

Full Text Available In order to investigate the corrosion performance on intersecting and longitudinal surfaces of unoxidized and oxidized directionally solidified superalloys, Ni-base directionally solidified superalloy DZ125 and Co-base directionally solidified superalloy DZ40M were selected. Oxidation behavior on both alloys with different orientations was investigated at 1050℃ at different times, simulating the oxidation process of vanes or blades in service; subsequent electrochemical performance in 3.5%NaCl aqueous solution was studied on two orientations of unoxidized and oxidized alloys, simulating the corrosion process of superalloy during downtime. The results show that grain boundaries and sub-boundaries of directionally solidified superalloys are susceptible to corrosion and thus longitudinal surface with lower area fraction of grain boundaries has higher corrosion resistance. Compared to intersecting surface of alloys, the structure of grain boundaries of longitudinal surface is less conducive to diffusion and thus the oxidation rate on longitudinal surface is lower. Formation of oxide layers on alloys after short-time oxidation provides protective effect and enhances the corrosion resistance.

Application of the integral method to modelling the oxidation of defected fuel elements

International Nuclear Information System (INIS)

Kolar, M.

1995-06-01

The starting point for this report is the discrepancy reported in previous work between the reaction-diffusion calculations and the CEX-1 experiment, which involves storage of defected fuel elements in air at 150 deg C. This discrepancy is considerably diminished here by a more critical choice of theoretical parameters, and by taking into account the fact that different CEX-1 fuel elements were oxidized at very different rates and that the fuel element used previously for comparison with theoretical calculations actually underwent two limited-oxygen-supply cycles. Much better agreement is obtained here between the theory and the third, unlimited-air, storage period of the CEX-1 experiment. The approximate integral method is used extensively for the solution of the one-dimensional diffusion moving-boundary problems that may describe various storage periods of the CEX-1 experiment. In some cases it is easy to extend this method to arbitrary precision by using higher moments of the diffusion equation. Using this method, the validity of quasi-steady-state approximation is verified. Diffusion-controlled oxidation is also studied. In this case, for the unlimited oxygen supply, the integral method leads to an exact analytical solution for linear geometry, and to a good analytical approximation of the solution for the spherically symmetric geometry. These solutions may have some application in the analysis of experiments on the oxidation of small UO 2 fragments or powders when the individual UO 2 grains may be considered to be approximately spherical. (author). 23 refs., 5 tabs., 11 figs

Short exposure to acetylene to distinguish between nitrifier and denitrifier nitrous oxide production in soil and sediment samples

OpenAIRE

Kester, R.A.; Boer, W. de; Laanbroek, H.J.

1996-01-01

The contribution of nitrifiers and denitrifiers to the nitrous oxide production in slurries of calcareous silt loam and river bank sediment at different oxygen concentrations was determined using acetylene as nitrification inhibitor. The addition of 10 Pa acetylene resulted in inhibition of nitrous oxide production at oxic conditions, but strongly enhanced the nitrous oxide production at oxygen-poor and anoxic conditions. Inhibition of nitrification by short exposure (1 to 24 h) to high conce...

Defect-induced magnetism in undoped and Mn-doped wide band gapzinc oxide grown by aerosol spray pyrolysis

CSIR Research Space (South Africa)

Motaung, DE

2014-08-01

Full Text Available Surface Science Vol. 311, pp 14-26 Defect-induced magnetism in undoped and Mn-doped wide band gapzinc oxide grown by aerosol spray pyrolysis D.E. Motaunga,∗, I. Kortidise, D. Papadakie, S.S. Nkosib,∗∗, G.H. Mhlongoa,J. Wesley-Smitha, G.F. Malgasc, B....W. Mwakikungaa, E. Coetseed, H.C. Swartd,G. Kiriakidise,f, S.S. Raya aDST/CSIR Nanotechnology Innovation Centre, National Centre for Nano-Structured Materials, Council for Scientific and Industrial Research, P.O. Box 395,Pretoria 0001, South Africa b...

Point defect properties of ternary fcc Fe-Cr-Ni alloys

Energy Technology Data Exchange (ETDEWEB)

Wróbel, J.S., E-mail: jan.wrobel@inmat.pw.edu.pl [Faculty of Materials Science and Engineering, Warsaw University of Technology, Woloska 141, 02-507 Warsaw (Poland); Nguyen-Manh, D.; Dudarev, S.L. [CCFE, Culham Science Centre, Abingdon, Oxon OX14 3DB (United Kingdom); Kurzydłowski, K.J. [Faculty of Materials Science and Engineering, Warsaw University of Technology, Woloska 141, 02-507 Warsaw (Poland)

2017-02-15

Highlights: • Properties of point defects depend on the local atomic environment. • As the degree of chemical order increases, the formation energies increase, too. • Relaxation volumes are larger for the more ordered structures. - Abstract: The properties of point defects in Fe-Cr-Ni alloys are investigated, using density functional theory (DFT), for two alloy compositions, Fe{sub 50}Cr{sub 25}Ni{sub 25} and Fe{sub 55}Cr{sub 15}Ni{sub 30}, assuming various degrees of short-range order. DFT-based Monte Carlo simulations are applied to explore short-range order parameters and generate representative structures of alloys. Chemical potentials for the relevant structures are estimated from the minimum of the substitutional energy at representative atoms sites. Vacancies and 〈1 0 0〉 dumbbells are introduced in the Fe{sub 2}CrNi intermetallic phase as well as in two Fe{sub 55}Cr{sub 15}Ni{sub 30} alloy structures: the disordered and short range-ordered structures, generated using Monte Carlo simulations at 2000 K and 300 K, respectively. Formation energies and relaxation volumes of defects as well as changes of magnetic moments caused by the presence of defects are investigated as functions of the local environment of a defect.

Probing of O2 vacancy defects and correlated magnetic, electrical and photoresponse properties in indium-tin oxide nanostructures by spectroscopic techniques

Science.gov (United States)

Ghosh, Shyamsundar; Dev, Bhupendra Nath

2018-05-01

Indium-tin oxide (ITO) 1D nanostructures with tunable morphologies i.e. nanorods, nanocombs and nanowires are grown on c-axis (0 0 0 1) sapphire (Al2O3) substrate in oxygen deficient atmosphere through pulsed laser deposition (PLD) technique and the effect of oxygen vacancies on optical, electrical, magnetic and photoresponse properties is investigated using spectroscopic methods. ITO nanostructures are found to be enriched with significant oxygen vacancy defects as evident from X-ray photoelectron and Raman spectroscopic analysis. Photoluminescence spectra exhibited intense mid-band blue emission at wavelength of region of 400-450 nm due to the electronic transition from conduction band maxima (CBM) to the singly ionized oxygen-vacancy (VO+) defect level within the band-gap. Interestingly, ITO nanostructures exhibited significant room-temperature ferromagnetism (RTFM) and the magnetic moment found proportional to concentration of VO+ defects which indicates VO+ defects are mainly responsible for the observed RTFM in nanostructures. ITO nanowires being enriched with more VO+ defects exhibited strongest RTFM as compared to other morphologies. Current voltage (I-V) characteristics of ITO nanostructures showed an enhancement of current under UV light as compared to dark which indicates such 1D nanostructure can be used as photovoltaic material. Hence, the study shows that there is ample opportunity to tailor the properties of ITOs through proper defect engineering's and such photosensitive ferromagnetic semiconductors might be promising for spintronic and photovoltaic applications.

Short overview on metabolomics approach to study pathophysiology of oxidative stress in cancer

Directory of Open Access Journals (Sweden)

Luka Andrisic

2018-04-01

Full Text Available Association of oxidative stress with carcinogenesis is well known, but not understood well, as is pathophysiology of oxidative stress generated during different types of anti-cancer treatments. Moreover, recent findings indicate that cancer associated lipid peroxidation might eventually help defending adjacent nonmalignant cells from cancer invasion. Therefore, untargeted metabolomics studies designed for advanced translational and clinical studies are needed to understand the existing paradoxes in oncology, including those related to controversial usage of antioxidants aiming to prevent or treat cancer. In this short review we have tried to put emphasis on the importance of pathophysiology of oxidative stress and lipid peroxidation in cancer development in relation to metabolic adaptation of particular types of cancer allowing us to conclude that adaptation to oxidative stress is one of the main driving forces of cancer pathophysiology. With the help of metabolomics many novel findings are being achieved thus encouraging further scientific breakthroughs. Combined with targeted qualitative and quantitative methods, especially immunochemistry, further research might reveal bio-signatures of individual patients and respective malignant diseases, leading to individualized treatment approach, according to the concepts of modern integrative medicine. Keywords: Carcinogenesis, Cancer, Oxidative stress, Lipid peroxidation, 4-hydroxynonenal, Glutathione, Metabolomics, Immunochemistry, Biomarkers, Omics science

Defects in zinc oxide grown by pulsed laser deposition

Energy Technology Data Exchange (ETDEWEB)

Ling, Francis C.C., E-mail: ccling@hku.hk [Department of Physics, The University of Hong Kong, Pokfulam Road, Hong Kong (China); Wang, Zilan; Ping Ho, Lok; Younas, M. [Department of Physics, The University of Hong Kong, Pokfulam Road, Hong Kong (China); Anwand, W.; Wagner, A. [Institute of Radiation Physics, Helmholtz-Zentrum Dresden-Rossendorf, Bautzner Landstr. 400, 01328 Dresden (Germany); Su, S.C. [Institute of Optoelectronic Material and Technology, South China Normal University, Guangzhou 510631 (China); Shan, C.X. [State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033 (China)

2016-01-01

ZnO films are grown on c-plane sapphire using the pulsed laser deposition method. Systematic studies on the effects of annealing are performed to understand the thermal evolutions of the defects in the films. Particular attention is paid to the discussions of the ZnO/sapphire interface thermal stability, the Zn-vacancy related defects having different microstructures, the origins of the green luminescence (∼2.4–2.5 eV) and the near band edge (NBE) emission at 3.23 eV.

Study on defects and impurities in cast-grown polycrystalline silicon substrates for solar cells

International Nuclear Information System (INIS)

Arafune, K.; Sasaki, T.; Wakabayashi, F.; Terada, Y.; Ohshita, Y.; Yamaguchi, M.

2006-01-01

We focused on the defects and impurities in polycrystalline silicon substrates, which deteriorate solar cell efficiency. Comparison of the minority carrier lifetime with the grain size showed that the region with short minority carrier lifetimes did not correspond to the region with small grains. Conversely, the minority carrier lifetime decreased as the etch-pit density (EPD) increased, suggesting that the minority carrier lifetime is strongly affected by the EPD. Electron beam induced current measurements revealed that a combination of grain boundaries and point defects had high recombination activity. Regarding impurities, the interstitial oxygen concentration was relatively low compared with that in a Czochralski-grown silicon substrate, the total carbon concentration exceeded the solubility limit of silicon melt. X-ray microprobe fluorescence measurements revealed a large amount of iron in the regions where there were many etch-pits and grain boundaries with etch-pits. X-ray absorption near edge spectrum analysis revealed trapped iron in the form of oxidized iron

Characterisation and modelling of defect formation in direct-chill cast AZ80 alloy

Energy Technology Data Exchange (ETDEWEB)

Mackie, D.; Robson, J.D.; Withers, P.J. [School of Materials, University of Manchester, Manchester M13 9PL (United Kingdom); Turski, M. [Magnesium Elektron UK, Rake Lane, Manchester, M27 8BF (United Kingdom)

2015-06-15

Wrought magnesium alloys for demanding structural applications require high quality defect free cast feedstock. The aim of this study was to first identify and characterise typical defects in direct chill cast magnesium–aluminium–zinc (AZ) alloy billet and then use modelling to understand the origins of these defects so they can be prevented. Defects were first located using ultrasonic inspection and were then characterised using X-ray computed tomography (XCT) and serial sectioning, establishing the presence of oxide films and intermetallic particles Al{sub 8}Mn{sub 5} in all defects. A model was developed to predict the flow patterns and growth kinetics of the intermetallic phases during casting, which influence the formation of defects. Simulation of the growth of the intermetallic particles demonstrated that precipitation from the liquid occurs in the mould. The combination of the entrained oxide films and intermetallic particles recirculates in the liquid metal and continues to grow, until large enough to settle, which is predicted to occur at the centre of the mould where the flow is the slowest. Based on these predictions, strategies to reduce the susceptibility to defect formation are suggested. - Highlights: • Casting defects in magnesium direct chill casting have been imaged and characterised in 3-dimensions. • The occurrences of co-located clusters of particles and oxide films have been characterised and explained. • A coupled model has been developed to help interpret the observed trend for defects located towards the centre of billets.

Characterisation and modelling of defect formation in direct-chill cast AZ80 alloy

International Nuclear Information System (INIS)

Mackie, D.; Robson, J.D.; Withers, P.J.; Turski, M.

2015-01-01

Wrought magnesium alloys for demanding structural applications require high quality defect free cast feedstock. The aim of this study was to first identify and characterise typical defects in direct chill cast magnesium–aluminium–zinc (AZ) alloy billet and then use modelling to understand the origins of these defects so they can be prevented. Defects were first located using ultrasonic inspection and were then characterised using X-ray computed tomography (XCT) and serial sectioning, establishing the presence of oxide films and intermetallic particles Al 8 Mn 5 in all defects. A model was developed to predict the flow patterns and growth kinetics of the intermetallic phases during casting, which influence the formation of defects. Simulation of the growth of the intermetallic particles demonstrated that precipitation from the liquid occurs in the mould. The combination of the entrained oxide films and intermetallic particles recirculates in the liquid metal and continues to grow, until large enough to settle, which is predicted to occur at the centre of the mould where the flow is the slowest. Based on these predictions, strategies to reduce the susceptibility to defect formation are suggested. - Highlights: • Casting defects in magnesium direct chill casting have been imaged and characterised in 3-dimensions. • The occurrences of co-located clusters of particles and oxide films have been characterised and explained. • A coupled model has been developed to help interpret the observed trend for defects located towards the centre of billets

Selected topics in high temperature chemistry defect chemistry of solids

CERN Document Server

Johannesen, Ø

2013-01-01

The properties of materials at high temperature play a vital role in their processing and practical use. The real properties of materials at elevated temperatures are very often governed by defects in their structure. Lattice defects may consist of point defects like vacancies, interstitial atoms or substituted atoms. These classes are discussed in general and specifically for oxides, nitrides, carbides and sulfides. Defect aggregates, shear structures and adaptive structures are also described. Special attention is paid to hydrogen defects which seem to play an important role in several mater

Defect pin behaviour in the DFR

International Nuclear Information System (INIS)

Sloss, W.M.; Bagley, K.Q.; Edmonds, E.; Potter, P.E.

1979-01-01

A program of defective fuel pin irradiations has been carried out in the DFR. This program employed fuel pins which had failed during previous irradiations (natural defects) and pins in which simulated failures (artificial defects) had been induced prior to irradiation or during an intermediate examination stage at moderate or substantial burnups. The artificial defects simulated longitudinal ruptures and were normally located at positions near the top, middle and bottom of the pin where clad temperatures were 450, 540 and 630 0 C respectively. The fuel was mixed U-Pu oxide, and fuel form, stoichiometry, clad type, pin diameter, linear rating, and burnup were among the variables examined. The defect pin tests were normally carried out in single pin or trefoil type vehicles. After irradiation all the pins were subjected to the normal nondestructive examination procedures and the visual, radiographic, gamma-scanning, and dimensional change results are presented. Several pins were destructively examined and the metallographic data are discussed

The role of surface and deep-level defects on the emission of tin oxide quantum dots

International Nuclear Information System (INIS)

Kumar, Vinod; Kumar, Vijay; Som, S; Ntwaeaborwa, O M; Swart, H C; Neethling, J H; Lee, Mike

2014-01-01

This paper reports on the role of surface and deep-level defects on the blue emission of tin oxide quantum dots (SnO 2 QDs) synthesized by the solution-combustion method at different combustion temperatures. X-ray diffraction studies showed the formation of a single rutile SnO 2 phase with a tetragonal lattice structure. High resolution transmission electron microscopy studies revealed an increase in the average dot size from 2.2 to 3.6 nm with an increase of the combustion temperature from 350 to 550 °C. A decrease in the band gap value from 3.37 to 2.76 eV was observed with the increase in dot size due to the quantum confinement effect. The photoluminescence emission was measured for excitation at 325 nm and it showed a broad blue emission band for all the combustion temperatures studied. This was due to the creation of various oxygen and tin vacancies/defects as confirmed by x-ray photoelectron spectroscopy data. The origin of the blue emission in the SnO 2 QDs is discussed with the help of an energy band diagram. (paper)

Influence of damages caused by surface defects upon the oxydation mechanism of inconel 600

International Nuclear Information System (INIS)

Rousselet, J.M.; Moulin, G.; Huntz, A.M.

1985-01-01

The influence of thermochemical and mechanical treatments on the oxidation mechanism of Ni 76 Cr 16 Fe 8 alloys (Inconel 600) was studied from a kinetic and analytical point of view, in order to clarify the role of defects either due to a prestrain or related to impurities such as S, C. for example to overcome sulfur pollution of steam generator tubes of nuclear power plant. For unstrained alloys, the oxidation process is controlled by the diffusion of alloy elements in the metallic substrate. But, beyond a critical strain value, the diffusion rate in the alloy is sufficiently accelerated by the strain induced defects to involve an oxidation control by the diffusion of base-elements (Cr, Ni, Fe) in the oxide scale. Sulfides present in the alloy (due to a pre-sulphidation treatment) strongly accelerate the oxidation kinetics owing to the fact that a first oxidation step, controlled by a chemical process of sulphide decomposition, takes place simultaneously to an internal oxidation; then, a second step related to sulphur diffusion through the oxide scale appears; sulphur in the oxide scale creates defects which accelerate cationic diffusion in the oxides. The baneful influence of sulphur can be balanced by prestraining the material [fr

The potential of large critical currents in the high Tc oxides

International Nuclear Information System (INIS)

Deutcher, G.

1993-01-01

The potential for high critical current densities is examined. on a thermodynamical basis, the energy scale for vortex pinning can be derived for instance from a measurement of the width of the critical region. This energy scale is of the order of 0.2 eV in YBCO, which is sufficient for practical applications. Another important parameter is the short coherence length. The inner plane length, of the order of a few lattice spacing, is favorable for pinning by point defects. But the very short outer plane length gives rise to anomalous magnetic behavior, unfavorable for high-field applications at high temperature; this is true in particular in most anisotropic oxides, such as the Bi compounds (author)

Effects of oxide traps, interface traps, and ''border traps'' on metal-oxide-semiconductor devices

International Nuclear Information System (INIS)

Fleetwood, D.M.; Winokur, P.S.; Reber, R.A. Jr.; Meisenheimer, T.L.; Schwank, J.R.; Shaneyfelt, M.R.; Riewe, L.C.

1993-01-01

We have identified several features of the 1/f noise and radiation response of metal-oxide-semiconductor (MOS) devices that are difficult to explain with standard defect models. To address this issue, and in response to ambiguities in the literature, we have developed a revised nomenclature for defects in MOS devices that clearly distinguishes the language used to describe the physical location of defects from that used to describe their electrical response. In this nomenclature, ''oxide traps'' are simply defects in the SiO 2 layer of the MOS structure, and ''interface traps'' are defects at the Si/SiO 2 interface. Nothing is presumed about how either type of defect communicates with the underlying Si. Electrically, ''fixed states'' are defined as trap levels that do not communicate with the Si on the time scale of the measurements, but ''switching states'' can exchange charge with the Si. Fixed states presumably are oxide traps in most types of measurements, but switching states can either be interface traps or near-interfacial oxide traps that can communicate with the Si, i.e., ''border traps'' [D. M. Fleetwood, IEEE Trans. Nucl. Sci. NS-39, 269 (1992)]. The effective density of border traps depends on the time scale and bias conditions of the measurements. We show the revised nomenclature can provide focus to discussions of the buildup and annealing of radiation-induced charge in non-radiation-hardened MOS transistors, and to changes in the 1/f noise of MOS devices through irradiation and elevated-temperature annealing

Short-Term Caloric Restriction Suppresses Cardiac Oxidative Stress and Hypertrophy Caused by Chronic Pressure Overload.

Science.gov (United States)

Kobara, Miyuki; Furumori-Yukiya, Akiko; Kitamura, Miho; Matsumura, Mihoko; Ohigashi, Makoto; Toba, Hiroe; Nakata, Tetsuo

2015-08-01

Caloric restriction (CR) prevents senescent changes, in which reactive oxygen species (ROS) have a critical role. Left ventricular (LV) hypertrophy is a risk factor for cardiovascular diseases. We examined whether CR alters cardiac redox state and hypertrophy from chronic pressure overload. Male c57BL6 mice were subjected to ascending aortic constriction (AAC) with ad libitum caloric intake (AL + AAC group) or 40% restricted caloric intake (CR + AAC group). CR was initiated 2 weeks before AAC and was continued for 4 weeks. Two weeks after constriction, AAC increased LV wall thickness, impaired transmitral flow velocity, and augmented myocyte hypertrophy and fibrosis, in association with enhancement of BNP and collagen III expressions in the AL + AAC group. In the AL + AAC group, oxidative stress in cardiac tissue and mitochondria were enhanced, and NADPH oxidase activity and mitochondrial ROS production were elevated. These changes were significantly attenuated in the CR + AAC group. Additionally, in antioxidant systems, myocardial glutathione peroxidase and superoxide dismutase activities were enhanced in the CR + AAC group. Chronic pressure overload increased cardiac oxidative damage, in association with cardiac hypertrophy and fibrosis. Short-term CR suppressed oxidative stress and improved cardiac function, suggesting that short-term CR could be a useful strategy to prevent pressure overload-induced cardiac injury. Copyright © 2015 Elsevier Inc. All rights reserved.

International conference on defects in insulating crystals

International Nuclear Information System (INIS)

1977-01-01

Short summaries of conference papers are presented. Some of the conference topics included transport properties, defect levels, superionic conductors, radiation effects, John-Teller effect, electron-lattice interactions, and relaxed excited states

The role of healed N-vacancy defective BC2N sheet and nanotube by NO molecule in oxidation of NO and CO gas molecules

Science.gov (United States)

Nematollahi, Parisa; Esrafili, Mehdi D.; Neyts, Erik C.

2018-06-01

In this study, the healing of N-vacancy boron carbonitride nanosheet (NV-BC2NNS) and nanotube (NV-BC2NNT) by NO molecule is studied by means of density functional theory calculations. Two different N-vacancies are considered in each of these structures in which the vacancy site is surrounded by either three B-atoms (NB) or by two B- and one C-atom (NBC). By means of the healed BC2NNS and BC2NNT as a support, the removal of two toxic gas molecules (NO and CO) are applicable. It should be noted that the obtained energy barriers of both healing and oxidizing processes are significantly lower than those of graphene, carbon nanotubes or boron nitride nanostructures. Also, at the end of the oxidation process, the pure BC2NNS or BC2NNT is obtained without any additional defects. Therefore, by using this method, we can considerably purify the defective BC2NNS/BC2NNT. Moreover, according to the thermochemistry calculations we can further confirm that the healing process of the NV-BC2NNS and NV-BC2NNT by NO are feasible at room temperature. So, we can claim that this study could be very helpful in both purifying the defective BC2NNS/BC2NNT while in the same effort removing toxic NO and CO gases.

International conference on defects in insulating crystals

Energy Technology Data Exchange (ETDEWEB)

1977-01-01

Short summaries of conference papers are presented. Some of the conference topics included transport properties, defect levels, superionic conductors, radiation effects, John-Teller effect, electron-lattice interactions, and relaxed excited states. (SDF)

Impact of short-term dietary modification on postprandial oxidative stress

Directory of Open Access Journals (Sweden)

Bloomer Richard J

2012-03-01

Full Text Available Abstract Background We have recently reported that short-term (21-day dietary modification in accordance with a stringent vegan diet (i.e., a Daniel Fast lowers blood lipids as well as biomarkers of oxidative stress. However, this work only involved measurements obtained in a fasted state. In the present study, we determined the postprandial response to a high-fat milkshake with regards to blood triglycerides (TAG, biomarkers of oxidative stress, and hemodynamic variables before and following a 21-day Daniel Fast. Methods Twenty-two subjects (10 men and 12 women; aged 35 ± 3 years completed a 21-day Daniel Fast. To induce oxidative stress, a milkshake (fat = 0.8 g·kg-1; carbohydrate = 1.0 g·kg-1; protein = 0.25 g·kg-1 was consumed by subjects on day one and day 22 in a rested and 12-hour fasted state. Before and at 2 and 4 h after consumption of the milkshake, heart rate (HR and blood pressure were measured. Blood samples were also collected at these times and analyzed for TAG, malondialdehyde (MDA, hydrogen peroxide (H2O2, advanced oxidation protein products (AOPP, nitrate/nitrite (NOx, and Trolox Equivalent Antioxidant Capacity (TEAC. Results A time effect was noted for HR (p = 0.006, with values higher at 2 hr post intake of the milkshake as compared to pre intake (p p = 0.02, and a trend for lower systolic blood pressure was noted (p = 0.07. Time effects were noted for TAG (p = 0.001, MDA (p 2O2 (p p p p p = 0.02, which was higher post fast as compared to pre fast. No pre/post fast × time interactions were noted (p > 0.05, with the area under the curve from pre to post fast reduced only slightly for TAG (11%, MDA (11%, H2O2 (8%, and AOPP (12%, with a 37% increase noted for NOx. Conclusion Partaking in a 21-day Daniel Fast does not result in a statistically significant reduction in postprandial oxidative stress. It is possible that a longer time course of adherence to the Daniel Fast eating plan may be needed to observe significant

Ab initio study of perovskite type oxide materials for solid oxide fuel cells

Science.gov (United States)

Lee, Yueh-Lin

2011-12-01

Perovskite type oxides form a family of materials of significant interest for cathodes and electrolytes of solid oxide fuel cells (SOFCs). These perovskites not only are active catalysts for surface oxygen reduction (OR) reactions but also allow incorporating the spilt oxygen monomers into their bulk, an unusual and poorly understood catalytic mechanism that couples surface and bulk properties. The OR mechanisms can be influenced strongly by defects in perovskite oxides, composition, and surface defect structures. This thesis work initiates a first step in developing a general strategy based on first-principles calculations for detailed control of oxygen vacancy content, transport rates of surface and bulk oxygen species, and surface/interfacial reaction kinetics. Ab initio density functional theory methods are used to model properties relevant for the OR reactions on SOFC cathodes. Three main research thrusts, which focus on bulk defect chemistry, surface defect structures and surface energetics, and surface catalytic properties, are carried to investigate different level of material chemistry for improved understanding of key physics/factors that govern SOFC cathode OR activity. In the study of bulk defect chemistry, an ab initio based defect model is developed for modeling defect chemistry of LaMnO 3 under SOFC conditions. The model suggests an important role for defect interactions, which are typically excluded in previous defect models. In the study of surface defect structures and surface energetics, it is shown that defect energies change dramatically (1˜2 eV lower) from bulk values near surfaces. Based on the existing bulk defect model with the calculated ab initio surface defect energetics, we predict the (001) MnO 2 surface oxygen vacancy concentration of (La0.9Sr0.1 )MnO3 is about 5˜6 order magnitude higher than that of the bulk under typical SOFC conditions. Finally, for surface catalytic properties, we show that area specific resistance, oxygen

Short stature caused by isolated SHOX gene haploinsufficiency: update on the diagnosis and treatment.

Science.gov (United States)

Jorge, Alexander A L; Funari, Mariana Fa; Nishi, Mirian Y; Mendonca, Berenice B

2010-12-01

Heterozygous SHOX defects are observed in about 50 to 90% of patients with Leri-Weill dyschondrosteosis (LWD), a common dominant inherited skeletal dysplasia; and in 2 to 15% of children with idiopathic short stature (ISS), indicating that SHOX defects are the most important monogenetic cause of short stature. In addition, children selected by disproportionate idiopathic short stature had a higher frequency of SHOX mutations (22%). A careful clinical evaluation of family members with short stature is recommended since it usually revealed LWD patients in families first classified as having ISS or familial short stature. SHOX-molecular analysis is indicated in families with LWD and ISS children with disproportionate short stature. Treatment with recombinant human growth hormone is considered an accepted approach to treat short stature associated with isolated SHOX defect. Here we review clinical, molecular and therapeutic aspects of SHOX haploinsufficiency.

PREFACE: The International Workshop on Positron Studies of Defects 2014

Science.gov (United States)

Sugita, Kazuki; Shirai, Yasuharu

2016-01-01

The International Workshop on Positron Studies of Defects 2014 (PSD-14) was held in Kyoto, Japan from 14-19 September, 2014. The PSD Workshop brought together positron scientists interested in studying defects to an international platform for presenting and discussing recent results and achievements, including new experimental and theoretical methods in the field. The workshop topics can be characterized as follows: • Positron studies of defects in semiconductors and oxides • Positron studies of defects in metals • New experimental methods and equipment • Theoretical calculations and simulations of momentum distributions, positron lifetimes and other characteristics for defects • Positron studies of defects in combination with complementary methods • Positron beam studies of defects at surfaces, interfaces, in sub-surface regions and thin films • Nanostructures and amorphous materials

Modeling of extended defects in silicon

International Nuclear Information System (INIS)

Law, M.E.; Jones, K.S.; Earles, S.K.; Lilak, A.D.; Xu, J.W.

1997-01-01

Transient Enhanced Diffusion (TED) is one of the biggest modeling challenges present in predicting scaled technologies. Damage from implantation of dopant ions changes the diffusivities of the dopants and precipitates to form complex extended defects. Developing a quantitative model for the extended defect behavior during short time, low temperature anneals is a key to explaining TED. This paper reviews some of the modeling developments over the last several years, and discusses some of the challenges that remain to be addressed. Two examples of models compared to experimental work are presented and discussed

Study on grown-in defects in CZ-Si by positron annihilation

International Nuclear Information System (INIS)

Nakagawa, S.; Hori, F.; Oshima, R.

2004-01-01

In order to study the nature of grown-in microdefects of a silicon wafer taken from a czochralski-grown single crystal (CZ-Si) in which ring oxidation-induced stacking faults (ring-OSF) are formed after oxidation heat treatment, positron annihilation coincidence Doppler broadening experiments (CDB) have been performed. Vacancy-type defects were detected in the central region of a wafer of an as-grown crystal, and they were changed with annealing. It was confirmed that different types of defects were formed in the regions of outside and inside of the ring-OSF. (orig.)

Systematic Study of the PbWO4 Crystal Short Term Instalibity Under Irradiation

CERN Document Server

Annenkov, Alexander; Chipaux, Rémi; Drobychev, Gleb; Fedorov, Andrey; Géléoc, Marie; Golubev, Nikolai; Korzhik, Mikhail; Lecoq, Paul; Ligun, A B; Missevitch, Oleg; Pavlenko, V B; Peigneux, Jean-Pierre; Singovsky, Alexander

1997-01-01

The effect of the irradiation on the lead tungstate ( PWO) scintillator properties has been studied at different irradiation facilities. Lead tungstate crystals grown with the tuning of oxides content in the melt to the stoichiometry of pure sheelite or sheelite-like type crystals and doped with heterovalent, trivalent and pentavalent impurities have been studied in order to optimize their resistance to irradiation. A combination of a selective cleaning of raw materials, a tuning of the melt from crystallization to crystallisation, and a destruction or compensation of the point structure defects has been used to minimize the short-term instability of PWO parameters under irradiation.

Electronic Structure of the Perylene / Zinc Oxide Interface: A Computational Study of Photoinduced Electron Transfer and Impact of Surface Defects

KAUST Repository

Li, Jingrui

2015-07-29

The electronic properties of dye-sensitized semiconductor surfaces consisting of pery- lene chromophores chemisorbed on zinc oxide via different spacer-anchor groups, have been studied at the density-functional-theory level. The energy distributions of the donor states and the rates of photoinduced electron transfer from dye to surface are predicted. We evaluate in particular the impact of saturated versus unsaturated aliphatic spacer groups inserted between the perylene chromophore and the semiconductor as well as the influence of surface defects on the electron-injection rates.

Electronic Structure of the Perylene / Zinc Oxide Interface: A Computational Study of Photoinduced Electron Transfer and Impact of Surface Defects

KAUST Repository

Li, Jingrui; Li, Hong; Winget, Paul; Bredas, Jean-Luc

2015-01-01

The electronic properties of dye-sensitized semiconductor surfaces consisting of pery- lene chromophores chemisorbed on zinc oxide via different spacer-anchor groups, have been studied at the density-functional-theory level. The energy distributions of the donor states and the rates of photoinduced electron transfer from dye to surface are predicted. We evaluate in particular the impact of saturated versus unsaturated aliphatic spacer groups inserted between the perylene chromophore and the semiconductor as well as the influence of surface defects on the electron-injection rates.

SHI induced defects in chemically synthesized graphene oxide for hydrogen storage applications

Energy Technology Data Exchange (ETDEWEB)

Sharma, Preetam K., E-mail: preetam.nano@gmail.com; Sharma, Vinay; Rajaura, Rajveer Singh; Singh, M. [Department of Physics, University of Rajasthan, Jaipur-302004, India. (India); Srivastava, Subodh; Vijay, Y. K. [Department of Physics, University of Rajasthan, Jaipur-302004, India. (India); Department of Physics, Vivekananda Global University, Jaipur-303012, India. (India); Sharma, S. S. [Department of Physics, Govt. Women Engineering College, Ajmer-305002, India. (India)

2016-05-06

Graphene, due to its unique properties arising from the single carbon layer, is a potential candidate for applications in a variety of fields including sensors, photovoltaics and energy storage. The atomic structure and morphology of the carbon nanomaterials especially graphene can be tailored by energetic ionic irradiation. As graphene sheet is very stable, the surface have less reactivity as compared to the edges of the sheets. By surface modification with energetic ion-beams additional dangling bonds can be formed to enhance the surface activity of the graphene film which could be exploited in a variety of applications. In the present work, graphene oxide was synthesized by improved Hummers’ Method. The irradiation was done with Ag{sup +} ions carrying energy 100 MeV with the fluence of 3×10{sup 13}. Raman spectrum of graphene irradiated by Ag{sup +} beam shows additional disordered peaks of D´ and D+G bands. There is also a decrease in the intensity of D band. AFM images depict the increase in the surface roughness of the films. This can be attributed to the increase in the defects in the flakes and intermixing of adjacent layers by irradiation.

Dry corrosion prediction of radioactive waste containers in long term interim storage: mechanisms of low temperature oxidation of pure iron and numerical simulation of an oxide scale growth

International Nuclear Information System (INIS)

Bertrand, N.

2006-10-01

In the framework of research on long term behaviour of radioactive waste containers, this work consists on the one hand in the study of low temperature oxidation of iron and on the other hand in the development of a numerical model of oxide scale growth. Isothermal oxidation experiments are performed on pure iron at 300 and 400 C in dry and humid air at atmospheric pressure. Oxide scales formed in these conditions are characterized. They are composed of a duplex magnetite scale under a thin hematite scale. The inner layer of the duplex scale is thinner than the outer one. Both are composed of columnar grains, that are smaller in the inner part. The outer hematite layer is made of very small equiaxed grains. Markers and tracers experiments show that a part of the scale grows at metal/oxide interface thanks to short-circuits diffusion of oxygen. A model for iron oxide scale growth at low temperature is then deduced. Besides this experimental study, the numerical model EKINOX (Estimation Kinetics Oxidation) is developed. It allows to simulate the growth of an oxide scale controlled by mixed mechanisms, such as anionic and cationic vacancies diffusion through the scale, as well as metal transfer at metal/oxide interface. It is based on the calculation of concentration profiles of chemical species and also point defects in the oxide scale and in the substrate. This numerical model does not use the classical quasi-steady-state approximation and calculates the future of cationic vacancies at metal/oxide interface. Indeed, these point defects can either be eliminated by interface motion or injected in the substrate, where they can be annihilated, considering sinks as the climb of dislocations. Hence, the influence of substrate cold-work can be investigated. The EKINOX model is validated in the conditions of Wagner's theory and is confronted with experimental results by its application to the case of high temperature oxidation of nickel. (author)

Metabolic encephalopathy and lipid storage myopathy associated with a presumptive mitochondrial fatty acid oxidation defect in a dog

Directory of Open Access Journals (Sweden)

Vanessa R Biegen

2015-11-01

Full Text Available A 1-year-old spayed female Shih Tzu presented for episodic abnormalities of posture and mentation. Neurologic examination was consistent with a bilaterally symmetric multifocal encephalopathy. The dog had a waxing-and-waning hyperlactemia and hypoglycemia. Magnetic resonance imaging revealed bilaterally symmetric cavitated lesions of the caudate nuclei with less severe abnormalities in the cerebellar nuclei. Empirical therapy was unsuccessful and the patient was euthanized. Post-mortem histopathology revealed bilaterally symmetric necrotic lesions of the caudate and cerebellar nuclei and multi-organ lipid accumulation, including a lipid storage myopathy. Malonic aciduria and ketonuria were found on urinary organic acid screen. Plasma acylcarnitine analysis suggested a fatty acid oxidation defect. Fatty acid oxidation disorders are inborn errors of metabolism documented in humans, but poorly described in dogs. Although neurologic signs have been described in humans with this group of diseases, descriptions of advanced imaging and histopathology are severely lacking. This report suggests that abnormalities of fatty acid metabolism may cause severe, bilateral gray matter necrosis and lipid accumulation in multiple organs including the skeletal muscles, liver, and kidneys. Veterinarians should be aware that fatty acid oxidation disorders, although potentially fatal, may be treatable. A timely definitive diagnosis is essential in guiding therapy.

Crystalline structure and propylene oxidation in complex bismuth-molybdenum oxide catalysts

International Nuclear Information System (INIS)

Manaila, R.; Ionescu, N.I.; Caldararu, M.

1980-01-01

Complex Bi-Mo oxide catalysts supported on amorphous SiO 2 were prepared by coprecipitation and tested in the reaction of selective oxidation of propylene to acrolein. They consist of a mixture of molybdate phases and excess MoO 3 . The Fe 2 (MoO 4 ) 3 phase was found to have a high concentration of lattice defects, induced by a Mo excess. These defects could be related to the catalytic conversion and to the selectivity to total oxidation by varying the calcination temperature. Calcination above 500 0 C induced also the transition of the metastable modification β-NiMoO 4 to the stable form α, accompanied by a loss of conversion. A complex Bi molybdate with scheelitic structure was found to have a high selectivity to acrolein. (author)

The quantum defect: Early history and recent developments

International Nuclear Information System (INIS)

Rau, A.R.; Inokuti, M.

1997-01-01

The notion of the quantum defect is important in atomic and molecular spectroscopy and also in unifying spectroscopy with collision theory. In the latter context, the quantum defect may be viewed as an ancestor of the phase shift. However, the origin of the term open-quotes quantum defectclose quotes does not seem to be explained in standard textbooks. It occurred in a 1921 paper by Schroedinger, preceding quantum mechanics, yet giving the correct meaning as an index of the short-range interactions with the core of an atom. We present the early history of the quantum-defect idea, and sketch its recent developments. copyright 1997 American Association of Physics Teachers

Evaluation of endogenous nitric oxide synthesis in congenital urea cycle enzyme defects.

Science.gov (United States)

Nagasaka, Hironori; Tsukahara, Hirokazu; Yorifuji, Tohru; Miida, Takashi; Murayama, Kei; Tsuruoka, Tomoko; Takatani, Tomozumi; Kanazawa, Masaki; Kobayashi, Kunihiko; Okano, Yoshiyuki; Takayanagi, Masaki

2009-03-01

Nitric oxide (NO) is synthesized from arginine and O(2) by nitric oxide synthase (NOS). Citrulline, which is formed as a by-product of the NOS reaction, can be recycled to arginine by the 2 enzymes acting in the urea cycle: argininosuccinate synthetase (ASS) and argininosuccinate lyase (ASL). Although the complete urea cycle is expressed only in the liver, ASS and ASL are expressed in other organs including the kidney and vascular endothelium. To examine possible alterations of the NO pathway in urea cycle defects, we measured plasma concentrations of arginine and citrulline and serum concentrations of nitrite/nitrate (NOx(-), stable NO metabolites) and asymmetric dimethylarginine (ADMA, an endogenous NOS inhibitor) in patients with congenital urea cycle disorders of 3 types: ornithine transcarbamylase (OTC) deficiency, ASS deficiency, and ASL deficiency. All were receiving oral arginine replacement at the time of this study. The same parameters were also measured in healthy subjects, who participated as controls. The OTC-deficient patients had significantly high NOx(-) and nonsignificantly high ADMA concentrations. Their NOx(-) was significantly positively correlated with arginine. The ASS-deficient patients had significantly low NOx(-) and significantly high ADMA concentrations. The ASL-deficient patients had normal NOx(-) and nonsignificantly high ADMA concentrations. In ASS-deficient and ASL-deficient patients, the NOx(-) was significantly inversely correlated with citrulline. These results suggest that NO synthesis is enhanced in OTC-deficient patients while receiving arginine but that NO synthesis remains low in ASS-deficient patients despite receiving arginine. They also suggest that endogenous NO synthesis is negatively affected by citrulline and ADMA in ASS-deficient and ASL-deficient patients. Although the molecular mechanisms remain poorly understood, we infer that the NO pathway might play a role in the pathophysiology related to congenital urea cycle

Defect engineering of SrTiO3 thin films for resistive switching applications

International Nuclear Information System (INIS)

Wicklein, Sebastian

2013-01-01

As a matter of fact, the importance of (transition) metal oxides for modern applications in the field of energy and information technology (IT) for e.g. novel energy storage systems and solid state electronic devices is increasing. Previous studies discovered the importance of defects in an oxide for their functionality and emphasized the impact of stoichiometry on the oxide performance. A new field of interest of the memory technology sector is the so-called resistive switching phenomena where a voltage stimulus causes a thin oxide (≤10 nm) to change its resistance state from a high resistance state to a low resistance state and back. So called resistive RAM (ReRAM or RRAM) are deemed to be the future replacement (2015) for contemporary FLASH memory technology due to its extremely low energy consumption, its very fast read/write time (ns) and its possible node size 3 was used as an oxide model material and was deposited by pulsed laser deposition (PLD) onto doped and undoped SrTiO 3 single crystals to investigate the formation of defects as a function of the process parameters. By combining structural and chemical thin film analysis with detailed PLD plume diagnostics and modeling of the laser plume dynamics, it was possible to elucidate the different physical mechanisms determining the stoichiometry of SrTiO 3 during PLD. Deviations between thin film and target stoichiometry are basically a result of two effects, namely, incongruent ablation and preferential scattering of lighter ablated species during their motion towards the substrate in the O 2 background gas. It is shown that the SrTiO 3 system reacts to a non-stoichiometry with the systematic incorporation of titanium and strontium vacancies which could be detected by positron annihilation lifetime spectroscopy. The role of extrinsic dopands such as Fe is shown to have more complicated effects on the SrTiO 3 system than portrayed by theoretical considerations. The effect of defects on the resistive

Topological defect clustering and plastic deformation mechanisms in functionalized graphene

Science.gov (United States)

Nunes, Ricardo; Araujo, Joice; Chacham, Helio

2011-03-01

We present ab initio results suggesting that strain plays a central role in the clustering of topological defects in strained and functionalized graphene models. We apply strain onto the topological-defect graphene networks from our previous work, and obtain topological-defect clustering patterns which are in excellent agreement with recent observations in samples of reduced graphene oxide. In our models, the graphene layer, containing an initial concentration of isolated topological defects, is covered by hydrogen or hydroxyl groups. Our results also suggest a rich variety of plastic deformation mechanism in functionalized graphene systems. We acknowledge support from the Brazilian agencies: CNPq, Fapemig, and INCT-Materiais de Carbono.

Defect engineering of SrTiO{sub 3} thin films for resistive switching applications

Energy Technology Data Exchange (ETDEWEB)

Wicklein, Sebastian

2013-11-19

As a matter of fact, the importance of (transition) metal oxides for modern applications in the field of energy and information technology (IT) for e.g. novel energy storage systems and solid state electronic devices is increasing. Previous studies discovered the importance of defects in an oxide for their functionality and emphasized the impact of stoichiometry on the oxide performance. A new field of interest of the memory technology sector is the so-called resistive switching phenomena where a voltage stimulus causes a thin oxide (≤10 nm) to change its resistance state from a high resistance state to a low resistance state and back. So called resistive RAM (ReRAM or RRAM) are deemed to be the future replacement (2015) for contemporary FLASH memory technology due to its extremely low energy consumption, its very fast read/write time (ns) and its possible node size <10 nm. A key challenge for the investigation of oxides and their electronic properties is the management and controlled incorporation of defects in the thin film oxide. Within this work, SrTiO{sub 3} was used as an oxide model material and was deposited by pulsed laser deposition (PLD) onto doped and undoped SrTiO{sub 3} single crystals to investigate the formation of defects as a function of the process parameters. By combining structural and chemical thin film analysis with detailed PLD plume diagnostics and modeling of the laser plume dynamics, it was possible to elucidate the different physical mechanisms determining the stoichiometry of SrTiO{sub 3} during PLD. Deviations between thin film and target stoichiometry are basically a result of two effects, namely, incongruent ablation and preferential scattering of lighter ablated species during their motion towards the substrate in the O{sub 2} background gas. It is shown that the SrTiO{sub 3} system reacts to a non-stoichiometry with the systematic incorporation of titanium and strontium vacancies which could be detected by positron annihilation

Computer experiment studies on mechanisms for irradiation induced defect production and annealing processes. Final report

International Nuclear Information System (INIS)

Beeler, J.R. Jr.; Beeler, M.F.

1979-06-01

This research is based on pair potentials used in the Brookhaven work. It extends their use in defect production simulations to the 5 MeV range and characterizes the short term annealing of the primary defect states. Defect properties and interactions are studied. Defect interactions include carbon, helium, and misfit metallic substitutional impurity interactions with vacancy and interstitial defects as well as vacancy-vacancy, interstitial-interstitial and vacancy-interstitial interactions

Computer experiment studies on mechanisms for irradiation induced defect production and annealing processes. Final report

Energy Technology Data Exchange (ETDEWEB)

Beeler, J.R. Jr.; Beeler, M.F.

1979-06-01

This research is based on pair potentials used in the Brookhaven work. It extends their use in defect production simulations to the 5 MeV range and characterizes the short term annealing of the primary defect states. Defect properties and interactions are studied. Defect interactions include carbon, helium, and misfit metallic substitutional impurity interactions with vacancy and interstitial defects as well as vacancy-vacancy, interstitial-interstitial and vacancy-interstitial interactions. (FS)

Irradiation temperature dependence of production efficiency of lattice defects in some neutron-irradiated oxides

International Nuclear Information System (INIS)

Okada, Moritami; Atobe, Kozo; Nakagawa, Masuo

2004-01-01

Temperature dependence of production efficiency of irradiation-induced defects in neutron-irradiated oxides has been investigated. Some oxide single crystals, MgO, α-Al 2 O 3 (sapphire) and TiO 2 (rutile), were irradiated at several controlled temperatures, 10, 20, 50, 100, 150 and 200 K, using the low-temperature irradiation facility of Kyoto University Reactor (KUR-LTL), and at ambient temperature (∼370 K) in the same facility. Irradiation temperature dependence of production efficiency of a 1 μm band in TiO 2 differs greatly from that of anion vacancy (F-type centers) in MgO and α-Al 2 O 3 . Results for MgO and α-Al 2 O 3 show steep negative gradients from 10 to 370 K, whereas that for TiO 2 includes a valley between 40 and 60 K and a hump at about 130 K, and then disappear at about 200 K. In MgO and α-Al 2 O 3 , this behavior can be explained by the recombination of Frenkel pairs, which is activated at higher temperature. In TiO 2 , in addition to the recombination mechanism, a covalent bonding property is thought to be exerted strong influence, and it is suggested that a disappearance of the 1 μm band at above 200 K is due to the recombination process of Frenkel pairs which is caused by the irradiation-induced crystallization

Irradiation temperature dependence of production efficiency of lattice defects in some neutron-irradiated oxides

Energy Technology Data Exchange (ETDEWEB)

Okada, Moritami [Research Reactor Institute, Kyoto University, Kumatori-cho, Sennan-gun, Osaka 5900494 (Japan)]. E-mail: okada@rri.kyoto-u.ac.jp; Atobe, Kozo [Faculty of Science, Naruto University of Education, Naruto, Tokushima 7728502 (Japan); Nakagawa, Masuo [Faculty of Education, Kagawa University, Takamatsu, Kagawa 7608522 (Japan)

2004-11-01

Temperature dependence of production efficiency of irradiation-induced defects in neutron-irradiated oxides has been investigated. Some oxide single crystals, MgO, {alpha}-Al{sub 2}O{sub 3} (sapphire) and TiO{sub 2} (rutile), were irradiated at several controlled temperatures, 10, 20, 50, 100, 150 and 200 K, using the low-temperature irradiation facility of Kyoto University Reactor (KUR-LTL), and at ambient temperature ({approx}370 K) in the same facility. Irradiation temperature dependence of production efficiency of a 1 {mu}m band in TiO{sub 2} differs greatly from that of anion vacancy (F-type centers) in MgO and {alpha}-Al{sub 2}O{sub 3}. Results for MgO and {alpha}-Al{sub 2}O{sub 3} show steep negative gradients from 10 to 370 K, whereas that for TiO{sub 2} includes a valley between 40 and 60 K and a hump at about 130 K, and then disappear at about 200 K. In MgO and {alpha}-Al{sub 2}O{sub 3}, this behavior can be explained by the recombination of Frenkel pairs, which is activated at higher temperature. In TiO{sub 2}, in addition to the recombination mechanism, a covalent bonding property is thought to be exerted strong influence, and it is suggested that a disappearance of the 1 {mu}m band at above 200 K is due to the recombination process of Frenkel pairs which is caused by the irradiation-induced crystallization.

Unified computational model of transport in metal-insulating oxide-metal systems

Science.gov (United States)

Tierney, B. D.; Hjalmarson, H. P.; Jacobs-Gedrim, R. B.; Agarwal, Sapan; James, C. D.; Marinella, M. J.

2018-04-01

A unified physics-based model of electron transport in metal-insulator-metal (MIM) systems is presented. In this model, transport through metal-oxide interfaces occurs by electron tunneling between the metal electrodes and oxide defect states. Transport in the oxide bulk is dominated by hopping, modeled as a series of tunneling events that alter the electron occupancy of defect states. Electron transport in the oxide conduction band is treated by the drift-diffusion formalism and defect chemistry reactions link all the various transport mechanisms. It is shown that the current-limiting effect of the interface band offsets is a function of the defect vacancy concentration. These results provide insight into the underlying physical mechanisms of leakage currents in oxide-based capacitors and steady-state electron transport in resistive random access memory (ReRAM) MIM devices. Finally, an explanation of ReRAM bipolar switching behavior based on these results is proposed.

Defective pyrite (100) surface: An ab initio study

International Nuclear Information System (INIS)

Stirling, Andras; Bernasconi, Marco; Parrinello, Michele

2007-01-01

The structural and electronic properties of sulfur monomeric defects at the FeS 2 (100) surface have been studied by periodic density-functional calculations. We have shown that for a monomeric sulfur bound to an originally fivefold coordinated surface Fe site, the defect core features a triplet electronic ground state with unpaired spins localized on the exposed Fe-S unit. At this site, the iron and sulfur ions have oxidation states +4 and -2, respectively. This defect can be seen as produced via heterolytic bond breaking of the S-S sulfur dimer followed by a Fe-S redox reaction. The calculated sulfur 2p core-level shifts of the monomeric defects are in good agreement with experimental photoemission spectra, which allow a compelling assignment of the different spectroscopic features. The effect of water on the stability of the defective surface has also been studied, and it has been shown that the triplet state is stable against the wetting of the surface. The most important implications of the presence of the monomeric sulfur defect on the reactivity are also discussed

Defect Chemistry, Electrical Properties, and Evaluation of New Oxides Sr2 CoNb1-x Tix O6-δ (0≤x≤1) as Cathode Materials for Solid Oxide Fuel Cells.

Science.gov (United States)

Azcondo, María Teresa; Yuste, Mercedes; Pérez-Flores, Juan Carlos; Muñoz-Gil, Daniel; García-Martín, Susana; Muñoz-Noval, Alvaro; Orench, Inés Puente; García-Alvarado, Flaviano; Amador, Ulises

2017-07-21

The perovskite series Sr 2 CoNb 1-x Ti x O 6-δ (0≤x≤1) was investigated in the full compositional range to assess its potential as cathode material for solid oxide fuel cell (SOFC). The variation of transport properties and thus, the area specific resistances (ASR) are explained by a detailed investigation of the defect chemistry. Increasing the titanium content from x=0-1 produces both oxidation of Co 3+ to Co 4+ (from 0 up to 40 %) and oxygen vacancies (from 6.0 to 5.7 oxygen atom/formula unit), although each charge compensation mechanism predominates in different compositional ranges. Neutron diffraction reveals that samples with high Ti-contents lose a significant amount of oxygen upon heating above 600 K. Oxygen is partially recovered upon cooling as the oxygen release and uptake show noticeably different kinetics. The complex defect chemistry of these compounds, together with the compositional changes upon heating/cooling cycles and atmospheres, produce a complicated behavior of electrical conductivity. Cathodes containing Sr 2 CoTiO 6-δ display low ASR values, 0,13 Ω cm 2 at 973 K, comparable to those of the best compounds reported so far, being a very promising cathode material for SOFC. © 2017 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

Probing and Manipulating the Interfacial Defects of InGaAs Dual-Layer Metal Oxides at the Atomic Scale.

Science.gov (United States)

Wu, Xing; Luo, Chen; Hao, Peng; Sun, Tao; Wang, Runsheng; Wang, Chaolun; Hu, Zhigao; Li, Yawei; Zhang, Jian; Bersuker, Gennadi; Sun, Litao; Pey, Kinleong

2018-01-01

The interface between III-V and metal-oxide-semiconductor materials plays a central role in the operation of high-speed electronic devices, such as transistors and light-emitting diodes. The high-speed property gives the light-emitting diodes a high response speed and low dark current, and they are widely used in communications, infrared remote sensing, optical detection, and other fields. The rational design of high-performance devices requires a detailed understanding of the electronic structure at this interface; however, this understanding remains a challenge, given the complex nature of surface interactions and the dynamic relationship between the morphology evolution and electronic structures. Herein, in situ transmission electron microscopy is used to probe and manipulate the structural and electrical properties of ZrO 2 films on Al 2 O 3 and InGaAs substrate at the atomic scale. Interfacial defects resulting from the spillover of the oxygen-atom conduction-band wavefunctions are resolved. This study unearths the fundamental defect-driven interfacial electric structure of III-V semiconductor materials and paves the way to future high-speed and high-reliability devices. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Optical transitions in two-dimensional topological insulators with point defects

Science.gov (United States)

Sablikov, Vladimir A.; Sukhanov, Aleksei A.

2016-12-01

Nontrivial properties of electronic states in topological insulators are inherent not only to the surface and boundary states, but to bound states localized at structure defects as well. We clarify how the unusual properties of the defect-induced bound states are manifested in optical absorption spectra in two-dimensional topological insulators. The calculations are carried out for defects with short-range potential. We find that the defects give rise to the appearance of specific features in the absorption spectrum, which are an inherent property of topological insulators. They have the form of two or three absorption peaks that are due to intracenter transitions between electron-like and hole-like bound states.

Defect-rich Ni-Ti layered double hydroxide as a highly efficient support for Au nanoparticles in base-free and solvent-free selective oxidation of benzyl alcohol.

Science.gov (United States)

Liu, Mengran; Fan, Guoli; Yu, Jiaying; Yang, Lan; Li, Feng

2018-04-17

Tuning the surface properties of supported metal catalysts is of vital importance for governing their catalytic performances in nanocatalysis. Here, we report highly dispersed nanometric gold nanoparticles (NPs) supported on Ni-Ti layered double hydroxides (NiTi-LDHs), which were employed in solvent-free and base-free selective oxidation of benzyl alcohol. A series of characterization techniques demonstrated that defect-rich NiTi-LDHs could efficiently stabilize Au NPs and decrease surface electron density of Au NPs. The as-formed Au/NiTi-LDH catalyst with a Ni/Ti molar ratio of 3 : 1 and an Au loading of 0.71 wt% yielded the highest turnover frequency value of ∼4981 h-1 at 120 °C among tested Au/NiTi-LDH catalysts with different Ni/Ti molar ratios, along with a high benzaldehyde selectivity of 98%. High catalytic efficiency of the catalyst was mainly correlated with surface cooperation between unique defects (i.e. defective Ti3+ species and oxygen vacancies) and abundant hydroxyl groups on the brucite-like layers of the NiTi-LDH support, which could lead to the preferential adsorption and activation of an alcohol hydroxyl moiety in benzyl alcohol and oxygen molecule, as well as the formation of more electron-deficient Ni3+ and Au0 species on the catalyst surface. Furthermore, the present Au/NiTi-LDH catalyst tolerated the oxidation of a wide variety of substrate structures into the corresponding aldehydes, acids or ketones. Our primary results illustrate that defect-rich NiTi-LDHs are promising supports which can efficiently modify surface structure and electronic properties of supported metal catalysts and consequently improve their catalytic performances.

A criterion and mechanism for power ramp defects

International Nuclear Information System (INIS)

Garlick, A.; Gravenor, J.G.

1978-02-01

The problem of power ramp defects in water reactor fuel pins is discussed in relation to results recently obtained from ramp experiments in the Steam Generating Heavy Water Reactor. Cladding cracks in the defected fuel pins were similar, both macro- and micro structurally, to those in unirradiated Zircaloy exposed to iodine stress-corrosion cracking (scc) conditions. Furthermore, when the measured stress levels for scc in short-term tests were taken as a criterion for ramp defects, UK fuel modelling codes were found to give a useful indication of defect probability under reactor service conditions. The likelihood of sticking between fuel and cladding is discussed and evidence presented which suggests that even at power a degree of adhesion may be expected in some fuel pins. The ramp defect mechanism is discussed in terms of fission product scc, initiation being by intergranular penetration and propagation by cleavage when suitably orientated grains are exposed to large dilatational stresses ahead of the main crack. (author)

Polydispersity-driven topological defects as order-restoring excitations.

Science.gov (United States)

Yao, Zhenwei; Olvera de la Cruz, Monica

2014-04-08

The engineering of defects in crystalline matter has been extensively exploited to modify the mechanical and electrical properties of many materials. Recent experiments on manipulating extended defects in graphene, for example, show that defects direct the flow of electric charges. The fascinating possibilities offered by defects in two dimensions, known as topological defects, to control material properties provide great motivation to perform fundamental investigations to uncover their role in various systems. Previous studies mostly focus on topological defects in 2D crystals on curved surfaces. On flat geometries, topological defects can be introduced via density inhomogeneities. We investigate here topological defects due to size polydispersity on flat surfaces. Size polydispersity is usually an inevitable feature of a large variety of systems. In this work, simulations show well-organized induced topological defects around an impurity particle of a wrong size. These patterns are not found in systems of identical particles. Our work demonstrates that in polydispersed systems topological defects play the role of restoring order. The simulations show a perfect hexagonal lattice beyond a small defective region around the impurity particle. Elasticity theory has demonstrated an analogy between the elementary topological defects named disclinations to electric charges by associating a charge to a disclination, whose sign depends on the number of its nearest neighbors. Size polydispersity is shown numerically here to be an essential ingredient to understand short-range attractions between like-charge disclinations. Our study suggests that size polydispersity has a promising potential to engineer defects in various systems including nanoparticles and colloidal crystals.

Reactive evaporation of low-defect density hafnia

International Nuclear Information System (INIS)

Chow, R.; Falabella, S.; Loomis, G.E.; Rainer, F.; Stolz, C.J.; Kozlowski, M.R.

1993-01-01

Motivation for this work includes observations at Lawrence Livermore National Laboratory of a correlation between laser damage thresholds and both the absorption and the nodular-defect density of coatings. Activated oxygen is used to increase the metal-oxidation kinetics at the coated surface during electron-beam deposition. A series of hafnia layers are made with various conditions: two μ-wave configuations, two sources (hafnium and hafnia), and two reactive oxygen pressures. Laser damage thresholds (1064-nm, 10-ns pulses), absorption (at 511 nm), and nodular-defect densities from these coatings are reported. The damage thresholds are observed to increase as the absorption of the coatings decreases. However, no significant increase in damage thresholds are observed with the coatings made from a low nodular-defect density source material (hafnium). Hafnia coatings can be made from hafnium sources that have lower nodular-defect densities, lower absorption, and damage thresholds that are comparable with coatings made from a conventional hafnia source

Neutron cross sections for defect production by high-energy displacement cascades in copper

International Nuclear Information System (INIS)

Heinisch, H.L.; Mann, F.M.

1983-08-01

Defect production cross sections for copper have been devised, based on computer simulations of displacement cascades. One thousand cascades ranging in energy from 200 eV to 200 keV were generated with the MARLOWE computer code. The cascades were subjected to a semi-empirical cascade quenching procedure and to short-term annealing with the ALSOME computer code. Functions were fitted to the numbers of defects produced as a function of primary knock-on atom (PKA) damage energy for the following defect types: 1) the total number of point defects after quenching and after short-term annealing, 2) the numbers of free interstitials and free vacancies after shortterm annealing, and 3) the numbers and sizes of vacancy and interstitial clusters after shortterm annealing. In addition, a function describing the number of distinct damage regions (lobes) per cascade was fitted to results of a graphical analysis of the cascade configurations. The defect production functions have been folded into PKA spectra using the NJOY nuclear data processing code system with ENDF/B-V nuclear data to yield neutron cross sections for defect production in copper. The free vacancy cross section displays much less variation with neutron energy than the cross sections for damage energy or total point defects

SHORT COMMUNICATION MICROWAVE-ASSISTED OXIDATION ...

African Journals Online (AJOL)

a

2Department of Chemistry, Faculty of Science, Imam Khomeini International ... Although the oxidation of organic compounds under non-aqueous conditions ... primary alcohols to aldehydes and secondary alcohols to ketones (Scheme 1). CH3.

Oxidative stress response in SH-SY5Y cells exposed to short-term 1800 MHz radiofrequency radiation.

Science.gov (United States)

Marjanovic Cermak, Ana Marija; Pavicic, Ivan; Trosic, Ivancica

2018-01-28

The exact mechanism that could explain the effects of radiofrequency (RF) radiation exposure at non-thermal level is still unknown. Increasing evidence suggests a possible involvement of reactive oxygen species (ROS) and development of oxidative stress. To test the proposed hypothesis, human neuroblastoma cells (SH-SY5Y) were exposed to 1800 MHz short-term RF exposure for 10, 30 and 60 minutes. Electric field strength within Gigahertz Transverse Electromagnetic cell (GTEM) was 30 V m -1 and specific absorption rate (SAR) was calculated to be 1.6 W kg -1 . Cellular viability was measured by MTT assay and level of ROS was determined by fluorescent probe 2',7'-dichlorofluorescin diacetate. Concentrations of malondialdehyde and protein carbonyls were used to assess lipid and protein oxidative damage and antioxidant activity was evaluated by measuring concentrations of total glutathione (GSH). After radiation exposure, viability of irradiated cells remained within normal physiological values. Significantly higher ROS level was observed for every radiation exposure time. After 60 min of exposure, the applied radiation caused significant lipid and protein damage. The highest GSH concentration was detected after 10 minute-exposure. The results of our study showed enhanced susceptibility of SH-SY5Y cells for development of oxidative stress even after short-term RF exposure.

Electron scattering by native defects in III-V nitrides and their alloys

International Nuclear Information System (INIS)

Hsu, L.; Walukiewicz, W.

1996-03-01

We have calculated the electron mobilities in GaN and InN taking into consideration scattering by short range potentials, in addition to all standard scattering mechanisms. These potentials are produced by the native defects which are responsible for the high electron concentrations in nominally undoped nitrides. Comparison of the calculated mobilities with experimental data shows that scattering by short range potentials is the dominant mechanism limiting the electron mobilities in unintentionally doped nitrides with large electron concentrations. In the case of Al x Ga 1-x N alloys, the reduction in the electron concentration due to the upward shift of the conduction band relative to the native defect level can account for the experimentally measured mobilities. Resonant scattering is shown to be important when the defect and Fermi levels are close in energy

Reduced graphene oxide synthesis by high energy ball milling

Energy Technology Data Exchange (ETDEWEB)

Mondal, O. [Department of Physics, M.U.C Women' s College, Burdwan 713104 (India); Mitra, S. [MLS Prof' s Unit, Indian Association for the Cultivation of Science, Kolkata 700032 (India); Pal, M. [CSIR-Central Glass and Ceramic Research Institute, Kolkata 700032 (India); Datta, A. [University School of Basic and Applied Science (USBAS), Guru Gobind Singh Indraprastha University, New Delhi 110075 (India); Dhara, S. [Surface and Nanoscience Division, Indira Gandhi Centre for Atomic Research, Kalpakkam 603102 (India); Chakravorty, D., E-mail: mlsdc@iacs.res.in [MLS Prof' s Unit, Indian Association for the Cultivation of Science, Kolkata 700032 (India)

2015-07-01

Graphene oxide is transformed to reduced graphene oxide by high energy ball milling in inert atmosphere. The process of ball milling introduces defects and removes oxygen functional groups, thereby creating the possibility of fine tuning the band gap of all intermediate stages of the structural evolution. A limit of the backbone sp{sup 2} network structure has been found which should be able to accommodate defects, before amorphization sets in. The amorphization of graphene oxide is achieved rather quickly in comparison to that of graphite. From thermogravimetric and differential scanning calorimetric analysis along with Fourier transform infrared (FTIR) and Raman spectroscopic studies, it is found that the number of oxygen-containing groups decreases at a faster rate than that of aromatic double bonds with increasing ball milling time with a maximum limit of 3 h. Several characterization techniques (FTIR, Raman, UV–Visible and X-ray photoelectron spectroscopy) have confirmed that the material synthesized is, indeed, reduced graphene oxide. - Highlights: • Graphene oxide is transformed to reduced graphene oxide by high energy ball milling in inert atmosphere. • Fine tuning the band gap by introducing defects and removing oxygen functional groups. • Introduction of excess defects leads to amorphization. • Photoluminescence has been observed in the UV-blue region.

THYROID HORMONE REVERSES AGING-INDUCED MYOCARDIAL FATTY ACID OXIDATION DEFECTS AND IMPROVES THE RESPONSE TO ACUTELY INCREASED AFTERLOAD

Energy Technology Data Exchange (ETDEWEB)

Ledee, Dolena; Portman, Michael A.; Kajimoto, Masaki; Isern, Nancy G.; Olson, Aaron

2013-06-07

Background: Subclinical hypothyroidism occurs during aging in humans and mice and may contribute to development of heart failure. Aging also impairs myocardial fatty acid oxidation, causing increased reliance on flux through pyruvate dehydrogenase (PDH) to maintain function. We hypothesize that the metabolic changes in aged hearts make them less tolerant to acutely increased work and that thyroid hormone reverses these defects. Methods: Studies were performed on young (Young, 4-6 months) and aged (Old, 22-24 months) C57/BL6 mice at standard (50 mmHg) and high afterload (80 mmHg). Another aged group received thyroid hormone for 3 weeks (Old-TH, high afterload only). Function was measured in isolated working hearts along with substrate fractional contributions (Fc) to the citric acid cycle (CAC) using perfusate with 13C labeled lactate, pyruvate, glucose and unlabeled palmitate and insulin. Results: Cardiac function was similar between Young and Old mice at standard afterload. Palmitate Fc was reduced but no individual carbohydrate contributions differed. CAC and individual substrate fluxes decreased in aged. At high afterload, -dP/dT was decreased in Old versus Young. Similar to low afterload, palmitate Fc was decreased in Old. Thyroid hormone reversed aging-induced changes in palmitate Fc and flux while significantly improving cardiac function. Conclusion: The aged heart shows diminished ability to increase cardiac work due to substrate limitations, primarily impaired fatty acid oxidation. The heart accommodates slightly by increasing efficiency through oxidation of carbohydrate substrates. Thyroid hormone supplementation in aged mice significantly improves cardiac function potentially through restoration of fatty acid oxidation.

Systematic study of the short-term instability of PbWO4 scintillator parameters under irradiation

International Nuclear Information System (INIS)

Annenkov, A.N.; Ligun, A.B.; Auffray, E.; Lecoq, P.; Chipaux, R.; Geleoc, M.; Drobychev, G. Yu; Fedorov, A.A.; Korzhik, M.V.; Missevitch, O.V.; Pavlenko, V.B.; Golubev, N.A.; Lednev, A.A.; Peigneux, J.-P.; Singovski, A.V.

1998-01-01

The effect of irradiation on lead tungstate PbWO 4 (PWO) scintillator properties has been studied at different irradiation facilities. Lead tungstate crystals, grown with the oxide content in the melt tuned to the stoichiometry of pure sheelite or sheelite-like crystal types and doped with heterovalent, trivalent and pentavalent impurities, have been studied in order to optimize their resistance to irradiation. A combination of a selective cleaning of raw materials, a tuning of the melt from crystallization to crystallization and a destruction or compensation of the point-structure defects has to be used to minimize the short-term instability of PWO parameters under irradiation

Inspecting the microstructure of electrically active defects at the Ge/GeOx interface

Science.gov (United States)

Fanciulli, Marco; Baldovino, Silvia; Molle, Alessandro

2012-02-01

High mobility substrates are important key elements in the development of advanced devices targeting a vast range of functionalities. Among them, Ge showed promising properties promoting it as valid candidate to replace Si in CMOS technology. However, the electrical quality of the Ge/oxide interface is still a problematic issue, in particular for the observed inversion of the n-type Ge surface, attributed to the presence of dangling bonds inducing a severe band bending [1]. In this scenario, the identification of electrically active defects present at the Ge/oxide interface and the capability to passivate or anneal them becomes a mandatory issue aiming at an electrically optimized interface. We report on the application of highly sensitive electrically detected magnetic resonance (EDMR) techniques in the investigation of defects at the interface between Ge and GeO2 (or GeOx), including Ge dangling bonds and defects in the oxide [2]. In particular we will investigate how different surface orientations, e.g. the (001) against the (111) Ge surface, impacts the microstructure of the interface defects. [1] P. Tsipas and A. Dimoulas, Appl. Phys. Lett. 94, 012114 (2009) [2] S. Baldovino, A. Molle, and M. Fanciulli, Appl. Phys. Lett. 96, 222110 (2010)

Copper Oxidation through Nucleation Sites of Chemical Vapor Deposited Graphene

DEFF Research Database (Denmark)

Luo, Birong; Whelan, Patrick Rebsdorf; Shivayogimath, Abhay

2016-01-01

We investigate the nucleation defect-triggered oxidation of Cu covered by CVD graphene during postannealing in air. The results reveal that different growth conditions may induce imperfect nucleation of graphene, and cause creation of defects near the nucleation point such as pin holes...... and amorphous carbon. These defects would serve as a pathway for the diffusion of 02 during thermal annealing, allowing oxidation of Cu to progress gradually from the nucleation center toward the growth edge. The oxidation process follows the graphene morphology closely; the shape of the oxidized area of Cu has...... a striking resemblance to that of the graphene flakes. Our work demonstrates that inferior graphene nucleation in CVD processes can compromise the oxidation resistance of a graphene-coated Cu substrate, and indirectly reveal the structure and integrity of graphene, which is of fundamental importance...

On the Defect Chemistry, Electrical Properties and Electrochemical Performances As Solid Oxide Fuel Cell Cathode Materials of New La-(Sr/Vac)-Co-Ti-O Perovskites

DEFF Research Database (Denmark)

García-Alvarado, Flaviano; Gómez-Pérez, Alejandro; Pérez-Flores, Juan Carlos

2015-01-01

Perovskite-type oxides are well known materials that have been proposed as electrodes and electrolytes for solid oxide fuel cells (SOFCs). The structure, which is referred to the ABO3 stoichiometry, can accommodate many different transition metal ions in the B-site; its electronic conductivity...... materials with valuable properties for SOFCs. We have analysed the effect of La3+ by Sr2+ substitution and vacancies creation in several double perovskites, La2MTiO6 (M = Co, Ni, Cu). Defect chemistry and electrical behavior have been investigated in order to unveil the nature of charge carriers....... Electrochemical performances have been assessed through polarization resistance measurements. In this communication we present the results regarding La2SrTiO6 perovskites. La/Sr substitution in La2-xSrxCoTiO6-δ produces Co2+ to Co3+ oxidation while vacancies in La2-xCoTiO6-δ yield Co2+ oxidation for low A...

Electric field dependent paramagnetic defect creation in single step implanted Simox films

International Nuclear Information System (INIS)

Leray, J.L.; Margail, J.

1991-01-01

X irradiation induced oxygen-vacancy defect creation has been studied in SIMOX produced by single step implantation and annealing. It is shown that SIMOX is substantially more radiation sensitive (for these defects) than thermal or bulk oxide. Irradiation in the presence of an electric field 0.5 -1 MV cm -1 is found to enhance the rate of defect creation by ≥ 2 times. Further enhanced defect creation is observed in SIMOX samples whose substrate has been chemically thinned prior to irradiation. This enhancement is attributed to modification of the network induced by hydrogen introduced during the thinning process

Trap state passivation improved hot-carrier instability by zirconium-doping in hafnium oxide in a nanoscale n-metal-oxide semiconductor-field effect transistors with high-k/metal gate

International Nuclear Information System (INIS)

Liu, Hsi-Wen; Tsai, Jyun-Yu; Liu, Kuan-Ju; Lu, Ying-Hsin; Chang, Ting-Chang; Chen, Ching-En; Tseng, Tseung-Yuen; Lin, Chien-Yu; Cheng, Osbert; Huang, Cheng-Tung; Ye, Yi-Han

2016-01-01

This work investigates the effect on hot carrier degradation (HCD) of doping zirconium into the hafnium oxide high-k layer in the nanoscale high-k/metal gate n-channel metal-oxide-semiconductor field-effect-transistors. Previous n-metal-oxide semiconductor-field effect transistor studies demonstrated that zirconium-doped hafnium oxide reduces charge trapping and improves positive bias temperature instability. In this work, a clear reduction in HCD is observed with zirconium-doped hafnium oxide because channel hot electron (CHE) trapping in pre-existing high-k bulk defects is the main degradation mechanism. However, this reduced HCD became ineffective at ultra-low temperature, since CHE traps in the deeper bulk defects at ultra-low temperature, while zirconium-doping only passivates shallow bulk defects.

Amphoteric oxide semiconductors for energy conversion devices: a tutorial review.

Science.gov (United States)

Singh, Kalpana; Nowotny, Janusz; Thangadurai, Venkataraman

2013-03-07

In this tutorial review, we discuss the defect chemistry of selected amphoteric oxide semiconductors in conjunction with their significant impact on the development of renewable and sustainable solid state energy conversion devices. The effect of electronic defect disorders in semiconductors appears to control the overall performance of several solid-state ionic devices that include oxide ion conducting solid oxide fuel cells (O-SOFCs), proton conducting solid oxide fuel cells (H-SOFCs), batteries, solar cells, and chemical (gas) sensors. Thus, the present study aims to assess the advances made in typical n- and p-type metal oxide semiconductors with respect to their use in ionic devices. The present paper briefly outlines the key challenges in the development of n- and p-type materials for various applications and also tries to present the state-of-the-art of defect disorders in technologically related semiconductors such as TiO(2), and perovskite-like and fluorite-type structure metal oxides.

Performance of organic field effect transistors with high-k gate oxide after application of consecutive bias stress

Energy Technology Data Exchange (ETDEWEB)

Lee, Sunwoo; Choi, Changhwan; Lee, Kilbock [Department of Materials Science and Engineering, Hanyang University, Seoul, 133-791 (Korea, Republic of); Cho, Joong Hwee [Department of Embedded Systems Engineering,University of Incheon, Incheon 406-722 (Korea, Republic of); Ko, Ki-Young [Korea Institute of Patent Information, Seoul, 146-8 (Korea, Republic of); Ahn, Jinho, E-mail: jhahn@hanyang.ac.kr [Department of Materials Science and Engineering, Hanyang University, Seoul, 133-791 (Korea, Republic of)

2012-10-30

We report the effect of consecutive electrical stress on the performance of organic field effect transistors (OFETs). Sputtered aluminum oxide (Al{sub 2}O{sub 3}) and hafnium oxide (HfO{sub 2}) were used as gate oxide layers. After the electrical stress, the threshold voltage, which strongly depends on bulk defects, was remarkably shifted to the negative direction, while the other performance characteristics of OFETs such as on-current, transconductance and mobility, which are sensitive to interface defects, were slightly decreased. This result implies that the defects in the bulk layer are significantly affected compared to the defects in the interface layer. Thus, it is important to control the defects in the pentacene bulk layer in order to maintain the good reliabilities of pentacene devices. Those defects in HfO{sub 2} gate oxide devices were larger compared to those in Al{sub 2}O{sub 3} gate oxide devices.

Structural and optical investigations of oxygen defects in zinc oxide nanoparticles

International Nuclear Information System (INIS)

Sahai, Anshuman; Goswami, Navendu

2015-01-01

ZnO nanoparticles (NPs) were prepared implementing chemical precipitation method. Structural and optical characterizations of synthesized ZnO NPs were thoroughly probed applying X-ray diffraction (XRD), transmission electron microscope (TEM), energy dispersive X-ray (EDX) analysis, X-ray photoelectron spectroscopy (XPS), UV- Visible absorption and fluorescence (FL) spectroscopy. The XRD and TEM analyses revealed hexagonal wurtzite phase with 25-30 nm size. EDX analysis indicated oxygen (O) rich composition of nanoparticles. In accordance with EDX, XPS analysis verifies O i rich stoichiometry of prepared NPs. Furthermore, concurrence of lattice oxygen (O L ), interstitial oxygen (O i ) and oxygen vacancy (V O ) in ZnO NPs was demonstrated through XPS analysis. Size quantization of nanoparticles is evident by blue shift of UV-Visible absorption energy. The FL spectroscopic investigations ascertain the existence of several discrete and defect states and radiative transitions occurring therein. Display of visible emission from oxygen defect states and most importantly, excess of O i defects in prepared ZnO nanoparticles, was well established through FL study

Defect-induced conductance oscillations in short atomic chains

International Nuclear Information System (INIS)

Wawrzyniak-Adamczewska, M; Kostyrko, T

2012-01-01

Electronic transport through a junction made of two gold electrodes connected with a gold chain containing a silver impurity is analyzed with a tight binding model and the density-functional theory. It is shown that the conductance depends in a simple way on the position of the impurity in the chain and the parity of the total number of atoms of the chain. For an odd chain the conductance takes on a higher value when the Ag impurity substitutes an even Au atom in the chain, and a lower one for an odd position of the Ag atom. In the case of an even chain the conductance hardly depends on the position of the Ag atom. This new kind of a defect-induced parity oscillation of the conductance is significantly more prominent than the well-known even-odd effect related to the dependence of the conductance on the parity of number of atoms in perfect chains. (paper)

Performance of artificially defected LWR fuel rods in an unlimited air dry storage atmosphere

International Nuclear Information System (INIS)

Einziger, R.E.; Knecht, R.L.; Cantley, D.A.; Cook, J.A.

1983-09-01

Thus far the tests are inconclusive as to whether breached LWR fuel can be stored at 230 0 C for long periods of time in air without fuel oxidation and dispersion. There is every indication, as expected, that there is no oxidation problem in an inert atmosphere. Only one of four defects exposed to unlimited air gave any indication of fuel oxidation. It has been suggested that this might be an incubation effect and continued operation would result in oxidation occurring at all four defects. As yet the destructive examination of the BWR rod has not been completed, so it is not possible to determine if cladding splitting was due to an anomoly in this test rod or something that can be expected in LWR rods in general. Thus far there is no indication of respirable particle dispersal even if fuel oxidation does occur

Transport Physics Mechanisms in Thin-Film Oxides.

Science.gov (United States)

Tierney, Brian D.; Hjalmarson, Harold P.; Jacobs-Gedrim, Robin B.; James, Conrad D.; Marinella, Matthew M.

A physics-based model of electron transport mechanisms in metal-insulating oxide-metal (M-I-M) systems is presented focusing on transport through the metal-oxide interfaces and in the bulk of the oxide. Interface tunneling, such as electron tunneling between the metal and the conduction band, or to oxide defect states, is accounted for via a WKB model. The effects of thermionic emission are also included. In the bulk of the oxide, defect-site hopping is dominant. Corresponding continuum calculations are performed for Ta2O5 M-I-M systems utilizing two different metal electrodes, e.g., platinum and tantalum. Such an asymmetrical M-I-M structure, applicable to resistive memory applications or oxide-based capacitors, reveals that the current can be either bulk or interface limited depending on the bias polarity and concentration of oxygen vacancy defects. Also, the dominance of some transport mechanisms over others is shown to be due to a complex interdependence between the vacancy concentration and bias polarity. Sandia National Laboratories is a multi-mission laboratory managed and operated by Sandia Corporation, a wholly owned subsidiary of Lockheed Martin Corporation, for the U.S. Department of Energy's National Nuclear Security Administration under contract DE-AC04-94AL85000.

A short-term supranutritional vitamin E supplementation alleviated respiratory alkalosis but did not reduce oxidative stress in heat stressed pigs

Directory of Open Access Journals (Sweden)

Fan Liu

2018-02-01

Full Text Available Objective Heat stress (HS triggers oxidative stress and respiratory alkalosis in pigs. The objective of this experiment was to study whether a short-term supranutritional amount of dietary vitamin E (VE can mitigate oxidative stress and respiratory alkalosis in heat-stressed pigs. Methods A total of 24 pigs were given either a control diet (17 IU/kg VE or a high VE (200 IU/kg VE; HiVE diet for 14 d, then exposed to thermoneutral (TN; 20°C, 45% humidity or HS (35°C, 35% to 45% humidity, 8 h daily conditions for 7 d. Respiration rate and rectal temperature were measured three times daily during the thermal exposure. Blood gas variables and oxidative stress markers were studied in blood samples collected on d 7. Results Although HiVE diet did not affect the elevated rectal temperature or respiration rate observed during HS, it alleviated (all p<0.05 for diet×temperature the loss of blood CO2 partial pressure and bicarbonate, as well as the increase in blood pH in the heat-stressed pigs. The HS reduced (p = 0.003 plasma biological antioxidant potential (BAP and tended to increase (p = 0.067 advanced oxidized protein products (AOPP in the heat-stressed pigs, suggesting HS triggers oxidative stress. The HiVE diet did not affect plasma BAP or AOPP. Only under TN conditions the HiVE diet reduced the plasma reactive oxygen metabolites (p<0.05 for diet× temperature. Conclusion A short-term supplementation with 200 IU/kg VE partially alleviated respiratory alkalosis but did not reduce oxidative stress in heat-stressed pigs.

Effects of short term and long term Extremely Low Frequency Magnetic Field on depressive disorder in mice: Involvement of nitric oxide pathway.

Science.gov (United States)

Madjid Ansari, Alireza; Farzampour, Shahrokh; Sadr, Ali; Shekarchi, Babak; Majidzadeh-A, Keivan

2016-02-01

Previous reports on the possible effects of Extremely Low Frequency Magnetic Fields (ELF MF) on mood have been paradoxical in different settings while no study has yet been conducted on animal behavior. In addition, it was shown that ELF MF exposure makes an increase in brain nitric oxide level. Therefore, in the current study, we aimed to assess the possible effect(s) of ELF MF exposure on mice Forced Swimming Test (FST) and evaluate the probable role of the increased level of nitric oxide in the observed behavior. Male adult mice NMRI were recruited to investigate the short term and long term ELF MF exposure (0.5 mT and 50 Hz, single 2h and 2 weeks 2h a day). Locomotor behavior was assessed by using open-field test (OFT) followed by FST to evaluate the immobility time. Accordingly, NΩ-nitro-l-arginine methyl ester 30 mg/kg was used to exert anti-depressant like effect. According to the results, short term exposure did not alter the immobility time, whereas long term exposure significantly reduces immobility time (pmice, whereas short term exposure has no significant effect. Also, reversing the anti-depressant activity of L-NAME indicates a probable increase in the brain nitric oxide. Copyright © 2016 Elsevier Inc. All rights reserved.

Effects of short-term Western diet on cerebral oxidative stress and diabetes related factors in APP x PS1 knock-in mice.

Science.gov (United States)

Studzinski, Christa M; Li, Feng; Bruce-Keller, Annadora J; Fernandez-Kim, Sun Ok; Zhang, Le; Weidner, Adam M; Markesbery, William R; Murphy, M Paul; Keller, Jeffrey N

2009-02-01

A chronic high fat Western diet (WD) promotes a variety of morbidity factors although experimental evidence for short-term WD mediating brain dysfunction remains to be elucidated. The amyloid precursor protein and presenilin-1 (APP x PS1) knock-in mouse model has been demonstrated to recapitulate some key features of Alzheimer's disease pathology, including amyloid-beta (Abeta) pathogenesis. In this study, we placed 1-month-old APP x PS1 mice and non-transgenic littermates on a WD for 4 weeks. The WD resulted in a significant elevation in protein oxidation and lipid peroxidation in the brain of APP x PS1 mice relative to non-transgenic littermates, which occurred in the absence of increased Abeta levels. Altered adipokine levels were also observed in APP x PS1 mice placed on a short-term WD, relative to non-transgenic littermates. Taken together, these data indicate that short-term WD is sufficient to selectively promote cerebral oxidative stress and metabolic disturbances in APP x PS1 knock-in mice, with increased oxidative stress preceding alterations in Abeta. These data have important implications for understanding how WD may potentially contribute to brain dysfunction and the development of neurodegenerative disorders such as Alzheimer's disease.

Melatonin protects against maternal obesity-associated oxidative stress and meiotic defects in oocytes via the SIRT3-SOD2-dependent pathway.

Science.gov (United States)

Han, Longsen; Wang, Haichao; Li, Ling; Li, Xiaoyan; Ge, Juan; Reiter, Russel J; Wang, Qiang

2017-10-01

Maternal obesity in humans is associated with poor outcomes across the reproductive spectrum. Emerging evidence indicates that these defects are likely attributed to factors within the oocyte. Although various molecules and pathways may contribute to impaired oocyte quality, prevention of fertility issues associated with maternal obesity is a challenge. Using mice fed a high-fat diet (HFD) as an obesity model, we document spindle disorganization, chromosome misalignment, and elevated reactive oxygen species (ROS) levels in oocytes from obese mice. Oral administration of melatonin to HFD mice not only reduces ROS generation, but also prevents spindle/chromosome anomalies in oocytes, consequently promoting the developmental potential of early embryos. Consistent with this finding, we find that melatonin supplement during in vitro maturation also markedly attenuates oxidative stress and meiotic defects in HFD oocytes. Finally, by performing morpholino knockdown and acetylation-mimetic mutant overexpression assays, we reveal that melatonin ameliorates maternal obesity-induced defective phenotypes in oocytes through the SIRT3-SOD2-dependent mechanism. In sum, our data uncover the marked beneficial effects of melatonin on oocyte quality from obese females; this opens a new area for optimizing culture system as well as fertility management. © 2017 John Wiley & Sons A/S. Published by John Wiley & Sons Ltd.

Investigation of the growth defects in strontium titanate single crystals

Energy Technology Data Exchange (ETDEWEB)

Kulagin, N A; Landar, S V; Podus, L P [Khar' kovskij Gosudarstvennyj Univ. (Ukrainian SSR)

1981-02-01

Investigation results of characteristics and reasons for formation of macroscopic growth defects in SrTiO/sub 3/ monocrystals grown up by Wernail method are presented. It is shown that blue colour occurring in the specimen volume is caused by shortage of oxygen during growing which results in transition of some ions from tetravalent to trivalent state. The defect of another type is characterized by increased content of Fe and Ni oxides.

Transport physics and device modeling of zinc oxide thin-film transistors. Pt. II: Contact Resistance in Short Channel Devices

NARCIS (Netherlands)

Torricelli, F.; Meijboom, J.R.; Smits, E.; Tripathi, A.K.; Gelinck, G.H.; Colalongo, L.; Kovacs-Vajna, Z.M.; Leeuw, D. de; Cantatore, E.

2011-01-01

Abstract—Short-channel zinc oxide (ZnO) thin-film transistors (TFTs) are investigated in a wide range of temperatures and bias conditions. Scaling down the channel length, the TFT performance is seriously affected by contact resistances, which depend on gate voltage and temperature. To account for

Transport physics and device modeling of zinc oxide thin film transistors - part II : contact resistance in short channel devices

NARCIS (Netherlands)

Torricelli, F.; Smits, E.C.P.; Meijboom, J.R.; Tripathi, A.K.; Gelinck, G.H.; Colalongo, L.; Kovacs-Vajna, Z.M.; Cantatore, E.

2011-01-01

Short-channel zinc oxide (ZnO) thin-film transistors (TFTs) are investigated in a wide range of temperatures and bias conditions. Scaling down the channel length, the TFT performance is seriously affected by contact resistances, which depend on gate voltage and temperature. To account for the

Thermal evolution of defects in undoped zinc oxide grown by pulsed laser deposition

Energy Technology Data Exchange (ETDEWEB)

Wang, Zilan; Su, Shichen; Ling, Francis Chi-Chung, E-mail: ccling@hku.hk [Department of Physics, The University of Hong Kong, Pokfulam Road, Hong Kong (China); Anwand, W.; Wagner, A. [Institute of Radiation Physics, Helmholtz-Zentrum Dresden-Rossendorf, Bautzner Landstr. 400, 01328 Dresden (Germany)

2014-07-21

Undoped ZnO films are grown by pulsed laser deposition on c-plane sapphire with different oxygen pressures. Thermal evolutions of defects in the ZnO films are studied by secondary ion mass spectroscopy (SIMS), Raman spectroscopy, and positron annihilation spectroscopy (PAS), and with the electrical properties characterized by the room temperature Hall measurement. Oxygen deficient defect related Raman lines 560 cm{sup −1} and 584 cm{sup −1} are identified and their origins are discussed. Thermal annealing induces extensive Zn out-diffusion at the ZnO/sapphire interface and leaves out Zn-vacancy in the ZnO film. Two types of Zn-vacancy related defects with different microstructures are identified in the films. One of them dominates in the samples grown without oxygen. Annealing the sample grown without oxygen or growing the samples in oxygen would favor the Zn-vacancy with another microstructure, and this Zn-vacancy defect persists after 1100 °C annealing.

Thermal evolution of defects in undoped zinc oxide grown by pulsed laser deposition

Science.gov (United States)

Wang, Zilan; Su, Shichen; Ling, Francis Chi-Chung; Anwand, W.; Wagner, A.

2014-07-01

Undoped ZnO films are grown by pulsed laser deposition on c-plane sapphire with different oxygen pressures. Thermal evolutions of defects in the ZnO films are studied by secondary ion mass spectroscopy (SIMS), Raman spectroscopy, and positron annihilation spectroscopy (PAS), and with the electrical properties characterized by the room temperature Hall measurement. Oxygen deficient defect related Raman lines 560 cm-1 and 584 cm-1 are identified and their origins are discussed. Thermal annealing induces extensive Zn out-diffusion at the ZnO/sapphire interface and leaves out Zn-vacancy in the ZnO film. Two types of Zn-vacancy related defects with different microstructures are identified in the films. One of them dominates in the samples grown without oxygen. Annealing the sample grown without oxygen or growing the samples in oxygen would favor the Zn-vacancy with another microstructure, and this Zn-vacancy defect persists after 1100 °C annealing.

Thermal evolution of defects in undoped zinc oxide grown by pulsed laser deposition

International Nuclear Information System (INIS)

Wang, Zilan; Su, Shichen; Ling, Francis Chi-Chung; Anwand, W.; Wagner, A.

2014-01-01

Undoped ZnO films are grown by pulsed laser deposition on c-plane sapphire with different oxygen pressures. Thermal evolutions of defects in the ZnO films are studied by secondary ion mass spectroscopy (SIMS), Raman spectroscopy, and positron annihilation spectroscopy (PAS), and with the electrical properties characterized by the room temperature Hall measurement. Oxygen deficient defect related Raman lines 560 cm −1 and 584 cm −1 are identified and their origins are discussed. Thermal annealing induces extensive Zn out-diffusion at the ZnO/sapphire interface and leaves out Zn-vacancy in the ZnO film. Two types of Zn-vacancy related defects with different microstructures are identified in the films. One of them dominates in the samples grown without oxygen. Annealing the sample grown without oxygen or growing the samples in oxygen would favor the Zn-vacancy with another microstructure, and this Zn-vacancy defect persists after 1100 °C annealing.

Evolution of Defect Structures and Deep Subgap States during Annealing of Amorphous In-Ga-Zn Oxide for Thin-Film Transistors

Science.gov (United States)

Jia, Junjun; Suko, Ayaka; Shigesato, Yuzo; Okajima, Toshihiro; Inoue, Keiko; Hosomi, Hiroyuki

2018-01-01

We investigate the evolution behavior of defect structures and the subgap states in In-Ga-Zn oxide (IGZO) films with increasing postannealing temperature by means of extended x-ray absorption fine-structure (EXAFS) measurements, positron annihilation lifetime spectroscopy (PALS), and cathodoluminescence (CL) spectroscopy, aiming to understand the relationship between defect structures and subgap states. EXAFS measurements reveal the varied oxygen coordination numbers around cations during postannealing and confirm two types of point defects, namely, excess oxygen around Ga atoms and oxygen deficiency around In and/or Zn atoms. PALS suggests the existence of cation-vacancy (VM )-related clusters with neutral or negative charge in both amorphous and polycrystalline IGZO films. CL spectra show a main emission band at approximately 1.85 eV for IGZO films, and a distinct shoulder located at about 2.15 eV for IGZO films postannealed above 600 °C . These two emission bands are assigned to a recombination between the electrons in the conduction band and/or in the shallow donor levels near the conduction band and the acceptors trapped above the valence-band maximum. The shallow donors are attributed to the oxygen deficiency, and the acceptors are thought to possibly arise from the excess oxygen or the VM-related clusters. These results open up an alternative route for understanding the device instability of amorphous IGZO-based thin-film transistors, especially the presence of the neutral or negatively charged VM-related clusters in amorphous IGZO films.

Hypotrophy of conduit artery walls of the offspring of nitric oxide-defective rats

Directory of Open Access Journals (Sweden)

Kristek F.

2004-01-01

Full Text Available The objective of the present study was to investigate the structure of the arterial walls of the offspring stemming from nitric oxide (NO-defective hypertensive parents. The parents were treated with N G-nitro-L-arginine methyl ester (40 mg kg-1 day-1 for 5 weeks. Blood pressure was measured noninvasively in six 30-day-old rats and nine age-matched controls. The cardiovascular system was perfused with glutaraldehyde at 120 mmHg. The thoracic aorta and carotid artery were processed for electron microscopy, and geometry was determined by light microscopy. Endothelial cells, smooth muscle cells (SMC and extracellular matrix (ECM were determined by the point counting method in electron micrographs of the carotid artery. The blood pressure of experimental offspring was 150.0 ± 2.3 vs 104.6 ± 2.1 mmHg (P < 0.01 for the controls and their heart/body weight ratio of 3.9 ± 0.1 vs 4.4 ± 0.2 (P < 0.05 for the controls indicated cardiac hypotrophy. The wall thickness (tunica intima and media of the thoracic aorta and carotid artery of experimental offspring was decreased to 78.9% (P < 0.01 and 83.8% (P < 0.01, respectively, compared to controls, as confirmed by a respective cross-sectional area of 85.3% (P < 0.01 and 84.1% (P < 0.01. The wall thickness/inner diameter ratio was reduced to 75% (P < 0.01 in the thoracic artery and to 81.5% (P < 0.01 in the carotid artery. No change in endothelial cell volume density or ECM was observed in the tunica intima of the carotid artery, and SMC volume density was lower in the tunica media (37.6 ± 0.9 vs 44.7 ± 1.1% for controls, P < 0.01, indicating compromised SMC development. Interference with arginine metabolism, a decrease in NO, and other factors are possible mechanisms underlying the structural alterations of the cardiovascular system of offspring from NO-defective hypertensive rats.

Importance of elastic finite-size effects: Neutral defects in ionic compounds

Science.gov (United States)

Burr, P. A.; Cooper, M. W. D.

2017-09-01

Small system sizes are a well-known source of error in density functional theory (DFT) calculations, yet computational constraints frequently dictate the use of small supercells, often as small as 96 atoms in oxides and compound semiconductors. In ionic compounds, electrostatic finite-size effects have been well characterized, but self-interaction of charge-neutral defects is often discounted or assumed to follow an asymptotic behavior and thus easily corrected with linear elastic theory. Here we show that elastic effects are also important in the description of defects in ionic compounds and can lead to qualitatively incorrect conclusions if inadequately small supercells are used; moreover, the spurious self-interaction does not follow the behavior predicted by linear elastic theory. Considering the exemplar cases of metal oxides with fluorite structure, we show that numerous previous studies, employing 96-atom supercells, misidentify the ground-state structure of (charge-neutral) Schottky defects. We show that the error is eliminated by employing larger cells (324, 768, and 1500 atoms), and careful analysis determines that elastic, not electrostatic, effects are responsible. The spurious self-interaction was also observed in nonoxide ionic compounds irrespective of the computational method used, thereby resolving long-standing discrepancies between DFT and force-field methods, previously attributed to the level of theory. The surprising magnitude of the elastic effects is a cautionary tale for defect calculations in ionic materials, particularly when employing computationally expensive methods (e.g., hybrid functionals) or when modeling large defect clusters. We propose two computationally practicable methods to test the magnitude of the elastic self-interaction in any ionic system. In commonly studied oxides, where electrostatic effects would be expected to be dominant, it is the elastic effects that dictate the need for larger supercells: greater than 96 atoms.

Oxidative stress and myocardial dysfunction in young rabbits after short term anabolic steroids administration.

Science.gov (United States)

Germanakis, Ioannis; Tsarouhas, Konstantinos; Fragkiadaki, Persefoni; Tsitsimpikou, Christina; Goutzourelas, Nikolaos; Champsas, Maria Christakis; Stagos, Demetrios; Rentoukas, Elias; Tsatsakis, Aristidis M

2013-11-01

The present study focuses on the short term effects of repeated low level administration of turinabol and methanabol on cardiac function in young rabbits (4 months-old). The experimental scheme consisted of two oral administration periods, lasting 1 month each, interrupted by 1-month wash-out period. Serial echocardiographic evaluation at the end of all three experimental periods was performed in all animals. Oxidative stress markers have also been monitored at the end of each administration period. Treated animals originally showed significantly increased myocardial mass and systolic cardiac output, which normalized at the end of the wash out period. Re-administration led to increased cardiac output, at the cost though of a progressive myocardial mass reduction. A dose-dependent trend towards impaired longitudinal systolic, diastolic and global myocardial function was also observed. The adverse effects were more pronounced in the methanabol group. For both anabolic steroids studied, the low dose had no significant effects on oxidative stress markers monitored, while the high dose created a hostile oxidative environment. In conclusion, anabolic administration has been found to create a possible deleterious long term effect on the growth of the immature heart and should be strongly discouraged especially in young human subjects. Copyright © 2013 Elsevier Ltd. All rights reserved.

Electrically Rotatable Polarizer Using One-Dimensional Photonic Crystal with a Nematic Liquid Crystal Defect Layer

Directory of Open Access Journals (Sweden)

Ryotaro Ozaki

2015-09-01

Full Text Available Polarization characteristics of defect mode peaks in a one-dimensional (1D photonic crystal (PC with a nematic liquid crystal (NLC defect layer have been investigated. Two different polarized defect modes are observed in a stop band. One group of defect modes is polarized along the long molecular axis of the NLC, whereas another group is polarized along its short axis. Polarizations of the defect modes can be tuned by field-induced in-plane reorientation of the NLC in the defect layer. The polarization properties of the 1D PC with the NLC defect layer is also investigated by the finite difference time domain (FDTD simulation.

Investigation of defects in ultra-thin Al{sub 2}O{sub 3} films deposited on pure copper by the atomic layer deposition technique

Energy Technology Data Exchange (ETDEWEB)

Chang, M.L.; Wang, L.C. [Department of Materials Science and Engineering, National Taiwan University, No. 1, Sec. 4, Roosevelt Road, Taipei 10617, Taiwan (China); Lin, H.C., E-mail: hclinntu@ntu.edu.tw [Department of Materials Science and Engineering, National Taiwan University, No. 1, Sec. 4, Roosevelt Road, Taipei 10617, Taiwan (China); Chen, M.J., E-mail: mjchen@ntu.edu.tw [Department of Materials Science and Engineering, National Taiwan University, No. 1, Sec. 4, Roosevelt Road, Taipei 10617, Taiwan (China); Lin, K.M. [Department of Materials Science and Engineering, Feng Chia University, No. 100, Wenhwa Road, Seatwen, Taichung 40724, Taiwan (China)

2015-12-30

Graphical abstract: Some residual OH ligands originating from incomplete reaction between TMA and surface species of OH* during ALD process induce the defects in deposited Al{sub 2}O{sub 3} films. Three possible types of defects are suggested. The analytic results indicate the defects are Type-I and/or Type-II but do not directly expose the substrate, like pinholes (Type-III). - Highlights: • Oxidation trials were conducted to investigate the defects in ultra-thin Al{sub 2}O{sub 3} films deposited ALD technique on pure copper. • The residual OH ligands in the deposited Al{sub 2}O{sub 3} films induce looser micro-structure which has worse oxidation resistance. • Superficial contamination particles on substrate surface are confirmed to be one of nucleation sites of the defects. - Abstract: Al{sub 2}O{sub 3} films with various thicknesses were deposited by the atomic layer deposition (ALD) technique on pure copper at temperatures of 100–200 °C. Oxidation trials were conducted in air at 200 °C to investigate the defects in these films. The analytic results show that the defects have a looser micro-structure compared to their surroundings, but do not directly expose the substrate, like pinholes. The film's crystallinity, mechanical properties and oxidation resistance could also be affected by these defects. Superficial contamination particles on the substrate surface are confirmed to be nucleation sites of the defects. A model for the mechanism of defect formation is proposed in this study.

Detecting a Defective Casing Seal at the Top of a Bedrock Aquifer.

Science.gov (United States)

Richard, Sandra K; Chesnaux, Romain; Rouleau, Alain

2016-03-01

An improperly sealed casing can produce a direct hydraulic connection between two or more originally isolated aquifers with important consequences regarding groundwater quantity and quality. A recent study by Richard et al. (2014) investigated a monitoring well installed in a fractured rock aquifer with a defective casing seal at the soil-bedrock interface. A hydraulic short circuit was detected that produced some leakage between the rock and the overlying deposits. A falling-head permeability test performed in this well showed that the usual method of data interpretation is not valid in this particular case due to the presence of a piezometric error. This error is the direct result of the preferential flow originating from the hydraulic short circuit and the subsequent re-equilibration of the piezometric levels of both aquifers in the vicinity of the inlet and the outlet of the defective seal. Numerical simulations of groundwater circulation around the well support the observed impact of the hydraulic short circuit on the results of the falling-head permeability test. These observations demonstrate that a properly designed falling-head permeability test may be useful in the detection of defective casing seals. © 2015, National Ground Water Association.

Finite volume form factors in the presence of integrable defects

International Nuclear Information System (INIS)

Bajnok, Z.; Buccheri, F.; Hollo, L.; Konczer, J.; Takacs, G.

2014-01-01

We developed the theory of finite volume form factors in the presence of integrable defects. These finite volume form factors are expressed in terms of the infinite volume form factors and the finite volume density of states and incorporate all polynomial corrections in the inverse of the volume. We tested our results, in the defect Lee–Yang model, against numerical data obtained by truncated conformal space approach (TCSA), which we improved by renormalization group methods adopted to the defect case. To perform these checks we determined the infinite volume defect form factors in the Lee–Yang model exactly, including their vacuum expectation values. We used these data to calculate the two point functions, which we compared, at short distance, to defect CFT. We also derived explicit expressions for the exact finite volume one point functions, which we checked numerically. In all of these comparisons excellent agreement was found

Formation, structure and magnetism of the metastable defect fluorite phases AVO3.5+x (A=In, Sc)

International Nuclear Information System (INIS)

Shafi, Shahid P.; Lundgren, Rylan J.; Cranswick, Lachlan M.D.; Bieringer, Mario

2007-01-01

We report the preparation and stability of ScVO 3.5+x and the novel phase InVO 3.5+x . AVO 3.5+x (A=Sc, In) defect fluorite structures are formed as metastable intermediates during the topotactic oxidation of AVO 3 bixbyites. The oxidation pathway has been studied in detail by means of thermogravimetric/differential thermal analysis and in-situ powder X-ray diffraction. The oxidation of the bixbyite phase follows a topotactic pathway at temperatures between 300 and 400 deg. C in air/carbon dioxide. The range of accessible oxygen stoichiometries for the AVO 3.5+x structures following this pathway are 0.00≤x≤0.22. Rietveld refinements against powder X-ray and neutron data revealed that InVO 3.54 and ScVO 3.70 crystallize in the defect fluorite structure in space group Fm-3 m (227) with a=4.9863(5) and 4.9697(3)A, respectively with A 3+ /V 4+ disorder on the (4a) cation site. Powder neutron diffraction experiments indicate clustering of oxide defects in all samples. Bulk magnetic measurements showed the presence of V 4+ and the absence of magnetic ordering at low temperatures. Powder neutron diffraction experiments confirmed the absence of a long range ordered magnetic ground state. - Graphical abstract: Topotactic oxidation of AVO 3 bixbyite to AVO 3.5 defect fluorite structure followed by in-situ powder X-ray diffraction. The upper structural diagram shows a six coordinated (A/V)-O 6 fragment in bixbyite, the lower structure illustrates the same seven-fold coordinated (A/V)-O 7 cubic environment in the defect fluorite structure

Oxide properties of autoclaved zircaloy cladding tubes investigated by the photoelectric polarization method

International Nuclear Information System (INIS)

Nystrand, A.C.

2000-06-01

Corrosion of zirconium alloys is an important lifetime limiting factor for the nuclear reactor fuel. The corrosion resistance of a metal is highly dependent on the ability of the surface metal oxide to transport electrons and ions, which is related to the stoichiometry of the oxide and the oxide defect concentration. The Photoelectric Polarization Method (PEP) is a structure sensitive method which earlier has been investigated as a possible method to study the defect structure in zirconium oxides. The purpose of the following work is, by using more optimized experimental equipment, to verify if the PEP method is a suitable method to study the defect structure in zirconium oxides and to predict the corrosion resistance for different zirconium alloys. The conclusions from the experiments are as follows: - The modifications of the experimental setup by means of a new source of light (deuterium lamp) and a new oscilloscope with an amplifier gave distinct Vpep signals. - The photoresponse is negative for all types of cladding and under all kind of oxidation regimes and hence the oxide is a n-type semiconductor with deficiency of oxygen. - The method needs to be verified by testing semiconductors with a known defect concentration

2012 Gordon Research Conference on Defects in Semiconductors - Formal Schedule and Speaker/Poster Program

Energy Technology Data Exchange (ETDEWEB)

Glaser, Evan [Naval Research Lab. (NRL), Washington, DC (United States)

2012-08-17

The meeting shall strive to develop and further the fundamental understanding of defects and their roles in the structural, electronic, optical, and magnetic properties of bulk, thin film, and nanoscale semiconductors and device structures. Point and extended defects will be addressed in a broad range of electronic materials of particular current interest, including wide bandgap semiconductors, metal-oxides, carbon-based semiconductors (e.g., diamond, graphene, etc.), organic semiconductors, photovoltaic/solar cell materials, and others of similar interest. This interest includes novel defect detection/imaging techniques and advanced defect computational methods.

Behavior of high Tc-superconductors and irradiated defects under reactor irradiation

International Nuclear Information System (INIS)

Atobe, Kozo; Honda, Makoto; Fukuoka, Noboru; Yoshida, Hiroyuki.

1991-01-01

It has been well known that the lattice defects of various types are introduced in ceramics without exception, and exert large effect to the function of these materials. Among oxides, the electronic materials positively using oxygen defect control have been already put in practical use. Also in the oxide high temperature superconductors which are Perovskite type composite oxides, the superconductive characteristics are affected largely by the concentration of the oxygen composing them. This is regarded as an important factor for causing superconductivity, related with the oxygen cavities arising at this time and the carriers bearing superconductivity. In this study, the irradiation effect with relatively low dose, the measurement under irradiation, the effect of irradiation temperature, and the effect of radiation quality were evaluated by the irradiation of YBCO, EBCO and LBCO. The experimental method, and the irradiation effect at low temperature and normal temperature, the effect of Co-60 gamma ray irradiation instead of reactor irradiation are reported. (K.I.)

Defect engineering of the electronic transport through cuprous oxide interlayers

KAUST Repository

Fadlallah, Mohamed M.; Eckern, Ulrich; Schwingenschlö gl, Udo

2016-01-01

The electronic transport through Au–(Cu2O)n–Au junctions is investigated using first-principles calculations and the nonequilibrium Green’s function method. The effect of varying the thickness (i.e., n) is studied as well as that of point defects

Pathophysiology of Corneal Scarring in Persistent Epithelial Defects After PRK and Other Corneal Injuries.

Science.gov (United States)

Wilson, Steven E; Medeiros, Carla S; Santhiago, Marcony R

2018-01-01

To analyze corneal persistent epithelial defects that occurred at 3 to 4 weeks after -4.50 diopter (D) photorefractive keratectomy (PRK) in rabbits and apply this pathophysiology to the treatment of persistent epithelial defects that occur after any corneal manipulations or diseases. Two of 168 corneas that had -4.50 D PRK to study epithelial basement membrane regeneration developed spontaneous persistent epithelial defects that did not heal at 3 weeks after PRK. These were studied with slit-lamp photographs, immunohistochemistry for the myofibroblast marker alpha-smooth muscle actin (α-SMA), and transmission electron microscopy. Myofibroblasts developed at the stromal surface within the persistent epithelial defect and for a short distance peripheral to the leading edge of the epithelium. No normal epithelial basement membrane was detectable within the persistent epithelial defect or for up to 0.3 mm behind the leading edge of the epithelium, although epithelial basement membrane had normally regenerated in other areas of the zone ablated by an excimer laser where the epithelium healed promptly. A persistent epithelial defect in the cornea results in the development of myofibroblasts and disordered extracellular matrix produced by these cells that together cause opacity within, and a short distance beyond, the persistent epithelial defect. Clinicians should treat persistent epithelial defects within 10 days of non-closure of the epithelium to facilitate epithelial healing to prevent long-term stromal scarring (fibrosis). [J Refract Surg. 2018;34(1):59-64.]. Copyright 2018, SLACK Incorporated.

New type of lethal short-limbed dwarfism

Energy Technology Data Exchange (ETDEWEB)

Nairn, E.R.; Chapman, S.

1989-05-01

Details are presented of a most unusual osteo-chondrodysplasia which presents with lethal neonatal short-limbed dwarfism, defective ossification and nodular calcification with cartilage. The features resemble one case previously described in the literature.

Analysis of the oxidation of short chain alkynes by flavocytochrome P450 BM3.

Science.gov (United States)

Waltham, Timothy N; Girvan, Hazel M; Butler, Christopher F; Rigby, Stuart R; Dunford, Adrian J; Holt, Robert A; Munro, Andrew W

2011-04-01

Bacillus megaterium flavocytochrome P450 BM3 (BM3) is a high activity fatty acid hydroxylase, formed by the fusion of soluble cytochrome P450 and cytochrome P450 reductase modules. Short chain (C6, C8) alkynes were shown to be substrates for BM3, with productive outcomes (i.e. alkyne hydroxylation) dependent on position of the carbon-carbon triple bond in the molecule. Wild-type P450 BM3 catalyses ω-3 hydroxylation of both 1-hexyne and 1-octyne, but is suicidally inactivated in NADPH-dependent turnover with non-terminal alkynes. A F87G mutant of P450 BM3 also undergoes turnover-dependent heme destruction with the terminal alkynes, pointing to a key role for Phe87 in controlling regioselectivity of alkyne oxidation. The terminal alkynes access the BM3 heme active site led by the acetylene functional group, since hydroxylated products are not observed near the opposite end of the molecules. For both 1-hexyne and 1-octyne, the predominant enantiomeric product formed (up to ∼90%) is the (S)-(-)-1-alkyn-3-ol form. Wild-type P450 BM3 is shown to be an effective oxidase catalyst of terminal alkynes, with strict regioselectivity of oxidation and potential biotechnological applications. The absence of measurable octanoic or hexanoic acid products from oxidation of the relevant 1-alkynes is also consistent with previous studies suggesting that removal of the phenyl group in the F87G mutant does not lead to significant levels of ω-oxidation of alkyl chain substrates.

Modeling charged defects inside density functional theory band gaps

International Nuclear Information System (INIS)

Schultz, Peter A.; Edwards, Arthur H.

2014-01-01

Density functional theory (DFT) has emerged as an important tool to probe microscopic behavior in materials. The fundamental band gap defines the energy scale for charge transition energy levels of point defects in ionic and covalent materials. The eigenvalue gap between occupied and unoccupied states in conventional DFT, the Kohn–Sham gap, is often half or less of the experimental band gap, seemingly precluding quantitative studies of charged defects. Applying explicit and rigorous control of charge boundary conditions in supercells, we find that calculations of defect energy levels derived from total energy differences give accurate predictions of charge transition energy levels in Si and GaAs, unhampered by a band gap problem. The GaAs system provides a good theoretical laboratory for investigating band gap effects in defect level calculations: depending on the functional and pseudopotential, the Kohn–Sham gap can be as large as 1.1 eV or as small as 0.1 eV. We find that the effective defect band gap, the computed range in defect levels, is mostly insensitive to the Kohn–Sham gap, demonstrating it is often possible to use conventional DFT for quantitative studies of defect chemistry governing interesting materials behavior in semiconductors and oxides despite a band gap problem

Structural evolution and optical properties of oxidized ZnS microrods

Energy Technology Data Exchange (ETDEWEB)

Trung, D.Q. [Advanced Institute for Science and Technology (AIST), Hanoi University of Science and Technology (HUST), Hanoi 10000 (Viet Nam); Quang Ninh University of Industry, Yen Tho-Dong Trieu District, Quang Ninh Province (Viet Nam); Thang, P.T.; Hung, N.D. [Advanced Institute for Science and Technology (AIST), Hanoi University of Science and Technology (HUST), Hanoi 10000 (Viet Nam); Huy, P.T., E-mail: huy.phamthanh@hust.edu.vn [Advanced Institute for Science and Technology (AIST), Hanoi University of Science and Technology (HUST), Hanoi 10000 (Viet Nam)

2016-08-15

In this study, we present a simple and versatile way to growth and modify photoemission of high quality ZnS microrods by thermal evaporation method in combination with post oxidation in oxygen environment. The as-grown ZnS microrods show strong near edge luminescence doublets at room temperature indicating the high crystalline quality. Using ultrahigh-resolution scanning electron microscope integrated with energy microanalysis and cathodoluminescence capacity we elucidate the effect of oxidation temperature on microstructure surface, chemical composition and emission spectra of ZnS microrods. Under appropriate oxidation condition, the initial high quality ZnS microrods can be converted into ZnS/ZnO microrod heterostructures or optically active porous ZnO microrods. More particularly, we demonstrate that the emission wavelength of an oxygen-related defect could be tuned in between optical band-gap of ZnS and ZnO upon increasing the oxidation temperature. This research introduces a simple approach to synthesize and tune optical property of high quality ZnS crystals. - Highlights: • High quality optically defect free ZnS microrods were synthesized in large scale. • The structural evolution and changes in optical emission upon oxidation were disclosed. • Luminescence of oxygen-related defect can be tuned using oxidation temperature. • The initial ZnS microrods can be converted into ZnS/ZnO heterostructure. • Porous ZnO microrods with negligible defect emissions were achieved.

SHORT COMMUNICATION

African Journals Online (AJOL)

a

______. *Corresponding author. E-mail: vani_chem@yahoo.com. SHORT COMMUNICATION. OXIDATION OF L-CYSTINE BY CHROMIUM(VI) - A KINETIC STUDY. Kalyan Kumar Adari, Annapurna Nowduri and Vani Parvataneni*. Department of Inorganic and Analytical Chemistry, School of Chemistry, Andhra University,.

Oxidative stress in duckweed (Lemna minor L.) caused by short-term cadmium exposure

Energy Technology Data Exchange (ETDEWEB)

Razinger, Jaka [Department for Environmental Technologies and Biomonitoring, Institute of Physical Biology, Veliko Mlacevo 59, SI-1290 Grosuplje (Slovenia)], E-mail: jaka@ifb.si; Dermastia, Marina [National Institute of Biology, Vecna pot 111, p.p. 141, SI-1001 Ljubljana (Slovenia); Biotechnical Faculty, Department of Biology, University of Ljubljana, Vecna pot 111, SI-1000 Ljubljana (Slovenia); Koce, Jasna Dolenc [Biotechnical Faculty, Department of Biology, University of Ljubljana, Vecna pot 111, SI-1000 Ljubljana (Slovenia); Zrimec, Alexis [Department for Environmental Technologies and Biomonitoring, Institute of Physical Biology, Veliko Mlacevo 59, SI-1290 Grosuplje (Slovenia)

2008-06-15

The mechanisms of plant defence against cadmium toxicity have been studied by short-term exposure of Lemna minor L. (common duckweed) to concentrations of CdCl{sub 2} ranging from 0 to 500 {mu}M. High accumulation of cadmium was observed (12,320 {+-} 2155 {mu}g g{sup -1} at 500 {mu}M CdCl{sub 2}), which caused a gradual decrease of plant growth, increased lipid peroxidation, and weakened the entire antioxidative defence. Total glutathione concentration decreased significantly; however, the concentration of oxidized glutathione remained stable. The responses of four antioxidant enzymes showed that catalase was the most inhibited after CdCl{sub 2} exposure, ascorbate peroxidase and guaiacol peroxidase moderately, and glutathione reductase least. The total antioxidative potential revealed an induced antioxidative network at 0.1 {mu}M CdCl{sub 2} (137 {+-} 13.2% of the control) and its reduction to only 47.4 {+-} 4.0% of the control at higher cadmium concentrations. The possible application of the examined biomarkers in ecotoxicological research is discussed. - The increase of total antioxidative potential at low cadmium concentration is one of the mechanisms that helps duckweed to cope with cadmium-induced oxidative stress.

Oxidative stress in duckweed (Lemna minor L.) caused by short-term cadmium exposure

International Nuclear Information System (INIS)

Razinger, Jaka; Dermastia, Marina; Koce, Jasna Dolenc; Zrimec, Alexis

2008-01-01

The mechanisms of plant defence against cadmium toxicity have been studied by short-term exposure of Lemna minor L. (common duckweed) to concentrations of CdCl 2 ranging from 0 to 500 μM. High accumulation of cadmium was observed (12,320 ± 2155 μg g -1 at 500 μM CdCl 2 ), which caused a gradual decrease of plant growth, increased lipid peroxidation, and weakened the entire antioxidative defence. Total glutathione concentration decreased significantly; however, the concentration of oxidized glutathione remained stable. The responses of four antioxidant enzymes showed that catalase was the most inhibited after CdCl 2 exposure, ascorbate peroxidase and guaiacol peroxidase moderately, and glutathione reductase least. The total antioxidative potential revealed an induced antioxidative network at 0.1 μM CdCl 2 (137 ± 13.2% of the control) and its reduction to only 47.4 ± 4.0% of the control at higher cadmium concentrations. The possible application of the examined biomarkers in ecotoxicological research is discussed. - The increase of total antioxidative potential at low cadmium concentration is one of the mechanisms that helps duckweed to cope with cadmium-induced oxidative stress

First-principles thermodynamics and defect kinetics guidelines for engineering a tailored RRAM device

International Nuclear Information System (INIS)

Clima, Sergiu; Chen, Yang Yin; Goux, Ludovic; Govoreanu, Bogdan; Degraeve, Robin; Fantini, Andrea; Jurczak, Malgorzata; Chen, Chao Yang; Pourtois, Geoffrey

2016-01-01

Resistive Random Access Memories are among the most promising candidates for the next generation of non-volatile memory. Transition metal oxides such as HfOx and TaOx attracted a lot of attention due to their CMOS compatibility. Furthermore, these materials do not require the inclusion of extrinsic conducting defects since their operation is based on intrinsic ones (oxygen vacancies). Using Density Functional Theory, we evaluated the thermodynamics of the defects formation and the kinetics of diffusion of the conducting species active in transition metal oxide RRAM materials. The gained insights based on the thermodynamics in the Top Electrode, Insulating Matrix and Bottom Electrode and at the interfaces are used to design a proper defect reservoir, which is needed for a low-energy reliable switching device. The defect reservoir has also a direct impact on the retention of the Low Resistance State due to the resulting thermodynamic driving forces. The kinetics of the diffusing conducting defects in the Insulating Matrix determine the switching dynamics and resistance retention. The interface at the Bottom Electrode has a significant impact on the low-current operation and long endurance of the memory cell. Our first-principles findings are confirmed by experimental measurements on fabricated RRAM devices.

First-principles thermodynamics and defect kinetics guidelines for engineering a tailored RRAM device

Energy Technology Data Exchange (ETDEWEB)

Clima, Sergiu, E-mail: clima@imec.be; Chen, Yang Yin; Goux, Ludovic; Govoreanu, Bogdan; Degraeve, Robin; Fantini, Andrea; Jurczak, Malgorzata [imec, Kapeldreef 75, 3001 Leuven (Belgium); Chen, Chao Yang [imec, Kapeldreef 75, 3001 Leuven (Belgium); Katholieke Universiteit Leuven, 3001 Leuven (Belgium); Pourtois, Geoffrey [imec, Kapeldreef 75, 3001 Leuven (Belgium); PLASMANT, University of Antwerp, 2610 Antwerpen (Belgium)

2016-06-14

Resistive Random Access Memories are among the most promising candidates for the next generation of non-volatile memory. Transition metal oxides such as HfOx and TaOx attracted a lot of attention due to their CMOS compatibility. Furthermore, these materials do not require the inclusion of extrinsic conducting defects since their operation is based on intrinsic ones (oxygen vacancies). Using Density Functional Theory, we evaluated the thermodynamics of the defects formation and the kinetics of diffusion of the conducting species active in transition metal oxide RRAM materials. The gained insights based on the thermodynamics in the Top Electrode, Insulating Matrix and Bottom Electrode and at the interfaces are used to design a proper defect reservoir, which is needed for a low-energy reliable switching device. The defect reservoir has also a direct impact on the retention of the Low Resistance State due to the resulting thermodynamic driving forces. The kinetics of the diffusing conducting defects in the Insulating Matrix determine the switching dynamics and resistance retention. The interface at the Bottom Electrode has a significant impact on the low-current operation and long endurance of the memory cell. Our first-principles findings are confirmed by experimental measurements on fabricated RRAM devices.

Chemotherapeutic-Induced Cardiovascular Dysfunction: Physiological Effects, Early Detection—The Role of Telomerase to Counteract Mitochondrial Defects and Oxidative Stress

Science.gov (United States)

Quryshi, Nabeel; Norwood Toro, Laura E.; Ait-Aissa, Karima; Kong, Amanda; Beyer, Andreas M.

2018-01-01

Although chemotherapeutics can be highly effective at targeting malignancies, their ability to trigger cardiovascular morbidity is clinically significant. Chemotherapy can adversely affect cardiovascular physiology, resulting in the development of cardiomyopathy, heart failure and microvascular defects. Specifically, anthracyclines are known to cause an excessive buildup of free radical species and mitochondrial DNA damage (mtDNA) that can lead to oxidative stress-induced cardiovascular apoptosis. Therefore, oncologists and cardiologists maintain a network of communication when dealing with patients during treatment in order to treat and prevent chemotherapy-induced cardiovascular damage; however, there is a need to discover more accurate biomarkers and therapeutics to combat and predict the onset of cardiovascular side effects. Telomerase, originally discovered to promote cellular proliferation, has recently emerged as a potential mechanism to counteract mitochondrial defects and restore healthy mitochondrial vascular phenotypes. This review details mechanisms currently used to assess cardiovascular damage, such as C-reactive protein (CRP) and troponin levels, while also unearthing recently researched biomarkers, including circulating mtDNA, telomere length and telomerase activity. Further, we explore a potential role of telomerase in the mitigation of mitochondrial reactive oxygen species and maintenance of mtDNA integrity. Telomerase activity presents a promising indicator for the early detection and treatment of chemotherapy-derived cardiac damage. PMID:29534446

The pinning property of Bi-2212 single crystals with columnar defects

International Nuclear Information System (INIS)

Okamura, Kazunori; Kiuchi, Masaru; Otabe, Edmund Soji; Yasuda, Takashi; Matsushita, Teruo; Okayasu, Satoru

2004-01-01

It is qualitatively understood that the condensation energy density in oxide superconductors, which is one of the essential parameters for determining their pinning strength, becomes large with increasing dimensionality of the superconductor. However, the condensation energy density has not yet been evaluated quantitatively. Its value can be estimated from the elementary pinning force of a known defect. Columnar defects created by heavy ion irradiation are candidates for being such defects. That is, the size and number density of columnar defects can be given. In addition, it is known that two-dimensional vortices like those in Bi-2212 are forced into three-dimensional states by these defects in a magnetic field parallel to the defects. Thus, the condensation energy density can be estimated from the pinning property of the columnar defects even for two-dimensional superconductors. A similar analysis was performed also for three-dimensional Y-123. A discussion is given of the relationship between the condensation energy density and the anisotropy parameter estimated from measurements of anisotropic resistivity and peak field

Indium–gallium–zinc oxide thin film transistors with a hybrid-channel structure for defect suppression and mobility improvement

International Nuclear Information System (INIS)

Lin, Huang-Kai; Su, Liang-Yu; Hung, Chia-Chin; Huang, JianJang

2013-01-01

In this work, we explore an indium gallium zinc oxide (IGZO) thin film transistor structure with a vacuum annealed IGZO thin film inserted between the dielectric and typical channel layers. The device demonstrates a better subthreshold swing and field-effect mobility due to the suppression of defects in the channel and the channel/dielectric interface. The hybrid channel structure also exhibits the flexibility of adjusting the threshold voltage. The superior carrier mobility was then verified from the transient response of the inverter circuit constructed by the devices. - Highlights: • Additional in-situ annealed In–Ga–ZnO film was inserted in thin film transistor (TFT). • Traps are suppressed and field effect mobility is improved in the TFT. • An inverter with the device structure has a better transient response

Indium–gallium–zinc oxide thin film transistors with a hybrid-channel structure for defect suppression and mobility improvement

Energy Technology Data Exchange (ETDEWEB)

Lin, Huang-Kai; Su, Liang-Yu; Hung, Chia-Chin [Graduate Institute of Photonics and Optoelectronics, National Taiwan University, 1, Roosevelt Road, Sec. 4, Taipei 106, Taiwan (China); Huang, JianJang, E-mail: jjhuang@cc.ee.ntu.edu.tw [Graduate Institute of Photonics and Optoelectronics, National Taiwan University, 1, Roosevelt Road, Sec. 4, Taipei 106, Taiwan (China); Department of Electrical Engineering, National Taiwan University, 1, Roosevelt Road, Sec. 4, Taipei 106, Taiwan (China)

2013-07-01

In this work, we explore an indium gallium zinc oxide (IGZO) thin film transistor structure with a vacuum annealed IGZO thin film inserted between the dielectric and typical channel layers. The device demonstrates a better subthreshold swing and field-effect mobility due to the suppression of defects in the channel and the channel/dielectric interface. The hybrid channel structure also exhibits the flexibility of adjusting the threshold voltage. The superior carrier mobility was then verified from the transient response of the inverter circuit constructed by the devices. - Highlights: • Additional in-situ annealed In–Ga–ZnO film was inserted in thin film transistor (TFT). • Traps are suppressed and field effect mobility is improved in the TFT. • An inverter with the device structure has a better transient response.

Short review of high-pressure crystal growth and magnetic and electrical properties of solid-state osmium oxides

Energy Technology Data Exchange (ETDEWEB)

Yamaura, Kazunari, E-mail: YAMAURA.Kazunari@nims.go.jp [Superconducting Properties Unit, National Institute for Materials Science, 1-1 Namiki, Tsukuba, Ibaraki 305-0044 (Japan); Graduate School of Chemical Sciences and Engineering, Hokkaido University, North 10 West 8, Kita-ku, Sapporo, Hokkaido 060-0810 (Japan)

2016-04-15

High-pressure crystal growth and synthesis of selected solid-state osmium oxides, many of which are perovskite-related types, are briefly reviewed, and their magnetic and electrical properties are introduced. Crystals of the osmium oxides, including NaOsO{sub 3}, LiOsO{sub 3}, and Na{sub 2}OsO{sub 4}, were successfully grown under high-pressure and high-temperature conditions at 6 GPa in the presence of an appropriate amount of flux in a belt-type apparatus. The unexpected discovery of a magnetic metal–insulator transition in NaOsO{sub 3}, a ferroelectric-like transition in LiOsO{sub 3}, and high-temperature ferrimagnetism driven by a local structural distortion in Ca{sub 2}FeOsO{sub 6} may represent unique features of the osmium oxides. The high-pressure and high-temperature synthesis and crystal growth has played a central role in the development of solid-state osmium oxides and the elucidation of their magnetic and electronic properties toward possible use in multifunctional devices. - Graphical Abstract: Flux-grown crystals of NaOsO{sub 3} under high-pressure and high-temperature conditions in a belt-type apparatus. The crystal shows a magnetically driven metal–insulator transition at a temperature of 410 K. - Highlights: • Short review of high-pressure crystal growth of solid-state osmium oxides. • Wide variety of magnetic properties of solid-state osmium oxides. • Perovskite and related dense structures stabilized at 3–17 GPa.

Single ventricle cardiac defect

International Nuclear Information System (INIS)

Eren, B.; Turkmen, N.; Fedakar, R.; Cetin, V.

2010-01-01

Single ventricle heart is defined as a rare cardiac abnormality with a single ventricle chamber involving diverse functional and physiological defects. Our case is of a ten month-old baby boy who died shortly after admission to the hospital due to vomiting and diarrhoea. Autopsy findings revealed cyanosis of finger nails and ears. Internal examination revealed; large heart, weighing 60 grams, single ventricle, without a septum and upper membranous part. Single ventricle is a rare pathology, hence, this paper aims to discuss this case from a medico-legal point of view. (author)

Acrolein coupling on reduced TiO 2(1 1 0): The effect of surface oxidation and the role of subsurface defects

Science.gov (United States)

Benz, Lauren; Haubrich, Jan; Quiller, Ryan G.; Friend, Cynthia M.

2009-04-01

Reactions of acrolein, water, and oxygen with the vacuum-reduced surface of TiO 2(1 1 0) are reported in a temperature programmed reaction study of the interaction of an aldehydic pollutant with a reducible metal oxide. A total of 25% of the acrolein that binds to the surface is converted to products. Notably, carbon-carbon coupling occurs with 86% selectivity for formation of C 6 products: C 6H 8, identified as 1,3-cyclohexadiene, in a peak at 500 K and benzene immediately thereafter at 530 K. Acrolein is evolved from the surface in three peaks: a peak independent of coverage at 495 K, attributed to decomposition of an intermediate that is partly converted to C 6H 8; a coverage-dependent peak that shifts from 370 K (low coverage) to 260 K (high coverage), which is attributed to adsorption at 5-fold coordinated Ti sites; and a multilayer state at 160 K. Water and acrolein compete for 5-fold coordinated titanium sites when dosed sequentially. The addition of water also opens a new reaction pathway, leading to the hydrogenation of acrolein to form propanal. Water has no effect on the yield of 1,3-cyclohexadiene. Exposure of the surface to oxygen prior to acrolein dosing quenches the evolution of acrolein at 495 K and concurrently eliminates the coupling. From these results, we propose that reduced subsurface defects such as titanium ion interstitials play a role in the reactions observed here. The notion that subsurface defects may contribute to the reactivity of organic molecules over reducible oxide substrates may prove to be general.

Defects and defect processes in nonmetallic solids

CERN Document Server

Hayes, W

2004-01-01

This extensive survey covers defects in nonmetals, emphasizing point defects and point-defect processes. It encompasses electronic, vibrational, and optical properties of defective solids, plus dislocations and grain boundaries. 1985 edition.

Homogeneity and internal defects detect of infrared Se-based chalcogenide glass

Science.gov (United States)

Li, Zupana; Wu, Ligang; Lin, Changgui; Song, Bao'an; Wang, Xunsi; Shen, Xiang; Dai, Shixunb

2011-10-01

Ge-Sb-Se chalcogenide glasses is a kind of excellent infrared optical material, which has been enviromental friendly and widely used in infrared thermal imaging systems. However, due to the opaque feature of Se-based glasses in visible spectral region, it's difficult to measure their homogeneity and internal defect as the common oxide ones. In this study, a measurement was proposed to observe the homogeneity and internal defect of these glasses based on near-IR imaging technique and an effective measurement system was also constructed. The testing result indicated the method can gives the information of homogeneity and internal defect of infrared Se-based chalcogenide glass clearly and intuitionally.

Strip defect recognition in electrical tests of silicon microstrip sensors

Energy Technology Data Exchange (ETDEWEB)

Valentan, Manfred, E-mail: valentan@mpp.mpg.de

2017-02-11

This contribution describes the measurement procedure and data analysis of AC-coupled double-sided silicon microstrip sensors with polysilicon resistor biasing. The most thorough test of a strip sensor is an electrical measurement of all strips of the sensor; the measured observables include e.g. the strip's current and the coupling capacitance. These measurements are performed to find defective strips, e.g. broken capacitors (pinholes) or implant shorts between two adjacent strips. When a strip has a defect, its observables will show a deviation from the “typical value”. To recognize and quantify certain defects, it is necessary to determine these typical values, i.e. the values the observables would have without the defect. As a novel approach, local least-median-of-squares linear fits are applied to determine these “would-be” values of the observables. A least-median-of-squares fit is robust against outliers, i.e. it ignores the observable values of defective strips. Knowing the typical values allows to recognize, distinguish and quantify a whole range of strip defects. This contribution explains how the various defects appear in the data and in which order the defects can be recognized. The method has been used to find strip defects on 30 double-sided trapezoidal microstrip sensors for the Belle II Silicon Vertex Detector, which have been measured at the Institute of High Energy Physics, Vienna (Austria).

Magnetic resonance and the diagnosis of short stature of hypothalamic-hypophyseal origin

International Nuclear Information System (INIS)

Vannelli, S.; Avataneo, T.; Benso, L.; Potenzoni, F.; Cirillo, S.; Mostert, M.; Bona, G.

1993-01-01

Magnetic resonance imaging was performed in 23 patients with short stature (7 had multiple pituitary hormone defect, 11 had isolated growth hormone deficiency and 5 had normal variant short stature) to investigate if there is a relation between magnetic resonance findings and results of endocrine tests. Magnetic resonance imaging of patients with multiple pituitary hormone deficiency or with serious isolated growth hormone deficiency (growth hormone 3μg/l) or with normal variant short stature, the technique revealed a normal or hypoplastic hypophysis. Magnetic resonance appears to be a useful second-level diagnostic tool in defining the type of alteration in growth defects of endocrine origin. 26 refs., 5 figs., 2 tabs

Electronic properties of hafnium oxide: A contribution from defects and traps

Energy Technology Data Exchange (ETDEWEB)

Gritsenko, Vladimir A., E-mail: grits@isp.nsc.ru; Perevalov, Timofey V.; Islamov, Damir R., E-mail: damir@isp.nsc.ru

2016-02-15

In the present article, we give a review of modern data and latest achievements pertaining to the study of electronic properties of oxygen vacancies in hafnium oxide. Hafnium oxide is a key dielectric for use in many advanced silicon devices. Oxygen vacancies in hafnium oxide largely determine the electronic properties of the material. We show that the electronic transitions between the states due to oxygen vacancies largely determine the optical absorption and luminescent properties of hafnium oxide. We discuss the role of oxygen vacancies as traps that facilitate charge transport in hafnium oxide films. Also, we demonstrate the fact that the electrical conductivity in hafnium oxide is controlled by the phonon-assisted tunnelling of charge carriers between traps that were identified as oxygen vacancies.

Detection and defect correction of operating process

International Nuclear Information System (INIS)

Vasendina, Elena; Plotnikova, Inna; Levitskaya, Anastasiya; Kvesko, Svetlana

2016-01-01

The article is devoted to the current problem of enterprise competitiveness rise in hard and competitive terms of business environment. The importance of modern equipment for detection of defects and their correction is explained. Production of chipboard is used as an object of research. Short description and main results of estimation efficiency of innovative solutions of enterprises are considered. (paper)

Defect identification in semiconductors with positron annihilation: experiment and theory

Science.gov (United States)

Tuomisto, Filip

2015-03-01

Positron annihilation spectroscopy is a very powerful technique for the detection, identification and quantification of vacancy-type defects in semiconductors. In the past decades, it has been used to reveal the relationship between opto-electronic properties and specific defects in a wide variety of materials - examples include parasitic yellow luminescence in GaN, dominant acceptor defects in ZnO and broad-band absorption causing brown coloration in natural diamond. In typical binary compound semiconductors, the selective sensitivity of the technique is rather strongly limited to cation vacancies that possess significant open volume and suitable charge (negative of neutral). On the other hand, oxygen vacancies in oxide semiconductors are a widely debated topic. The properties attributed to oxygen vacancies include the inherent n-type conduction, poor p-type dopability, coloration (absorption), deep level luminescence and non-radiative recombination, while the only direct experimental evidence of their existence has been obtained on the crystal surface. We will present recent advances in combining state-of-the-art positron annihilation experiments and ab initio computational approaches. The latter can be used to model both the positron lifetime and the electron-positron momentum distribution - quantities that can be directly compared with experimental results. We have applied these methods to study vacancy-type defects in III-nitride semiconductors (GaN, AlN, InN) and oxides such as ZnO, SnO2, In2O3andGa2O3. We will show that cation-vacancy-related defects are important compensating centers in all these materials when they are n-type. In addition, we will show that anion (N, O) vacancies can be detected when they appear as complexes with cation vacancies.

SrFe1‑xMoxO2+δ : parasitic ferromagnetism in an infinite-layer iron oxide with defect structures induced by interlayer oxygen

Science.gov (United States)

Guo, Jianhui; Shi, Lei; Zhao, Jiyin; Wang, Yang; Yuan, Xueyou; Li, Yang; Wu, Liang

2018-04-01

The recent discovered compound SrFeO2 is an infinite-layer-structure iron oxide with unusual square-planar coordination of Fe2+ ions. In this study, SrFe1‑xMoxO2+δ (x parasitic ferromagnetism of the compound and its relationship to the defect structures are investigated. It is found that substitution of high-valent Mo6+ for Fe2+ results in excess oxygen anions O2‑ inserted at the interlayer sites for charge compensation, which further causes large atomic displacements along the c-axis. Due to the robust but flexible Fe-O-Fe framework, the samples are well crystallized within the ab-plane, but are significantly poorer crystallized along the c-axis. Defect structures including local lattice distortions and edge dislocations responsible for the lowered crystallinity are observed by high resolution transmission electron microscopy. Both the magnetic measurements and electron spin resonance spectra provide the evidence of a parasitic ferromagnetism (FM). The week FM interaction originated from the imperfect antiferromagnetic (AFM) ordering could be ascribed to the introduction of uncompensated magnetic moments due to substitution of Mo6+ (S = 0) for Fe2+ (S = 2) and the canted/frustrated spins resulted from defect structures.

Complex defects in the oxidation of uranium

International Nuclear Information System (INIS)

MacCrone, R.K.; Sankaran, S.; Shatynski, S.R.; Colmenares, C.A.

1986-01-01

We are reporting EPR results obtained with uranium powder samples fully oxidized in dry air, water vapor, and air/water vapor mixtures. The results reported previously are confirmed and additional paramagnetic centers, associated with chemisorbed species, have been identified. The temperature dependence of the g-value for these centers from room temperature to 10K is also reported

Piezoelectricity induced defect modes for shear waves in a periodically stratified supperlattice

Science.gov (United States)

Piliposyan, Davit

2018-01-01

Properties of shear waves in a piezoelectric stratified periodic structure with a defect layer are studied for a superlattice with identical piezoelectric materials in a unit cell. Due to the electro-mechanical coupling in piezoelectric materials the structure exhibits defect modes in the superlattice with full transmission peaks both for full contact and electrically shorted interfaces. The results show an existence of one or two transmission peaks depending on the interfacial conditions. In the long wavelength region where coupling between electro-magnetic and elastic waves creates frequency band gaps the defect layer introduces one or two defect modes transmitting both electro-magnetic and elastic energies. Other parameters affecting the defect modes are the thickness of the defect layer, differences in refractive indexes and the magnitude of the angle of the incident wave. The results of the paper may be useful in the design of narrow band filters or multi-channel piezoelectric filters.

A new type of lethal short-limbed dwarfism

International Nuclear Information System (INIS)

Nairn, E.R.; Chapman, S.

1989-01-01

Details are presented of a most unusual osteo-chondrodysplasia which presents with lethal neonatal short-limbed dwarfism, defective ossification and nodular calcification with cartilage. The features resemble one case previously described in the literature. (orig.)

Positron Annihilation Study of Radiation Defects in Zinc Oxide

OpenAIRE

Tomiyama, Noriyuki; Takenaka, Minoru; Kuramoto, Eiichi

1992-01-01

Positron annihilation studies have been carried out to clarify the radiation induced defects in ZnO single crystals. Vapor-grown ZnO crystals were irradiated at 77 K with 28 MeV electrons. Before irradiation as-grown specimens showed the mean positron lifetime in the range of 160-195 ps. Electron irradiation increased the mean positron lifetime up to 205-210 ps.This long-lifetime disappeared until 473 K during successive isochronal annealing steps. The radiation-induced coloration was anneale...

A short-term supranutritional vitamin E supplementation alleviated respiratory alkalosis but did not reduce oxidative stress in heat stressed pigs.

Science.gov (United States)

Liu, Fan; Celi, Pietro; Chauhan, Surinder Singh; Cottrell, Jeremy James; Leury, Brian Joseph; Dunshea, Frank Rowland

2018-02-01

Heat stress (HS) triggers oxidative stress and respiratory alkalosis in pigs. The objective of this experiment was to study whether a short-term supranutritional amount of dietary vitamin E (VE) can mitigate oxidative stress and respiratory alkalosis in heat-stressed pigs. A total of 24 pigs were given either a control diet (17 IU/kg VE) or a high VE (200 IU/kg VE; HiVE) diet for 14 d, then exposed to thermoneutral (TN; 20°C, 45% humidity) or HS (35°C, 35% to 45% humidity, 8 h daily) conditions for 7 d. Respiration rate and rectal temperature were measured three times daily during the thermal exposure. Blood gas variables and oxidative stress markers were studied in blood samples collected on d 7. Although HiVE diet did not affect the elevated rectal temperature or respiration rate observed during HS, it alleviated (all prespiratory alkalosis but did not reduce oxidative stress in heat-stressed pigs.

Defect properties of CuCrO2: A density functional theory calculation

International Nuclear Information System (INIS)

Fang Zhi-Jie; Zhu Ji-Zhen; Zhou Jiang; Mo Man

2012-01-01

Using the first-principles methods, we study the formation energetics properties of intrinsic defects, and the charge doping properties of extrinsic defects in transparent conducting oxides CuCrO 2 . Intrinsic defects, some typical acceptor-type, and donor-type extrinsic defects in their relevant charge state are considered. By systematically calculating the formation energies and transition energy, the results of calculation show that, V Cu , O i , and O Cu are the relevant intrinsic defects in CuCrO 2 ; among these intrinsic defects, V Cu is the most efficient acceptor in CuCrO 2 . It is found that all the donor-type extrinsic defects have difficulty in inducing n-conductivity in CuCrO 2 because of their deep transition energy level. For all the acceptor-type extrinsic defects, substituting Mg for Cr is the most prominent doping acceptor with relative shallow transition energy levels in CuCrO 2 . Our calculation results are expected to be a guide for preparing promising n-type and p-type materials in CuCrO 2 . (condensed matter: electronic structure, electrical, magnetic, and optical properties)

An improved potential drop method for measuring and monitoring defects in structures

International Nuclear Information System (INIS)

Oppermann, W.; Keller, H.P.

1991-01-01

In its advanced form, the direct-current potential probe measuring technique is a reliable and relatively exact procedure for measuring and monitoring surface defects. In addition, there is the possibility - important for practical purposes - of measuring cracks at the inaccessible side of a component part. The improved accuracy, in particular with regard to short defects, is based on advanced measuring techniques and calibration curves determined at the electrolytical tank. (orig./DG) [de

Thymidine kinase 2 deficiency-induced mtDNA depletion in mouse liver leads to defect β-oxidation.

Directory of Open Access Journals (Sweden)

Xiaoshan Zhou

Full Text Available Thymidine kinase 2 (TK2 deficiency in humans causes mitochondrial DNA (mtDNA depletion syndrome. To study the molecular mechanisms underlying the disease and search for treatment options, we previously generated and described a TK2 deficient mouse strain (TK2(-/- that progressively loses its mtDNA. The TK2(-/- mouse model displays symptoms similar to humans harboring TK2 deficient infantile fatal encephalomyopathy. Here, we have studied the TK2(-/- mouse model to clarify the pathological role of progressive mtDNA depletion in liver for the severe outcome of TK2 deficiency. We observed that a gradual depletion of mtDNA in the liver of the TK2(-/- mice was accompanied by increasingly hypertrophic mitochondria and accumulation of fat vesicles in the liver cells. The levels of cholesterol and nonesterified fatty acids were elevated and there was accumulation of long chain acylcarnitines in plasma of the TK2(-/- mice. In mice with hepatic mtDNA levels below 20%, the blood sugar and the ketone levels dropped. These mice also exhibited reduced mitochondrial β-oxidation due to decreased transport of long chain acylcarnitines into the mitochondria. The gradual loss of mtDNA in the liver of the TK2(-/- mice causes impaired mitochondrial function that leads to defect β-oxidation and, as a result, insufficient production of ketone bodies and glucose. This study provides insight into the mechanism of encephalomyopathy caused by TK2 deficiency-induced mtDNA depletion that may be used to explore novel therapeutic strategies.

Thymidine kinase 2 deficiency-induced mtDNA depletion in mouse liver leads to defect β-oxidation.

Science.gov (United States)

Zhou, Xiaoshan; Kannisto, Kristina; Curbo, Sophie; von Döbeln, Ulrika; Hultenby, Kjell; Isetun, Sindra; Gåfvels, Mats; Karlsson, Anna

2013-01-01

Thymidine kinase 2 (TK2) deficiency in humans causes mitochondrial DNA (mtDNA) depletion syndrome. To study the molecular mechanisms underlying the disease and search for treatment options, we previously generated and described a TK2 deficient mouse strain (TK2(-/-)) that progressively loses its mtDNA. The TK2(-/-) mouse model displays symptoms similar to humans harboring TK2 deficient infantile fatal encephalomyopathy. Here, we have studied the TK2(-/-) mouse model to clarify the pathological role of progressive mtDNA depletion in liver for the severe outcome of TK2 deficiency. We observed that a gradual depletion of mtDNA in the liver of the TK2(-/-) mice was accompanied by increasingly hypertrophic mitochondria and accumulation of fat vesicles in the liver cells. The levels of cholesterol and nonesterified fatty acids were elevated and there was accumulation of long chain acylcarnitines in plasma of the TK2(-/-) mice. In mice with hepatic mtDNA levels below 20%, the blood sugar and the ketone levels dropped. These mice also exhibited reduced mitochondrial β-oxidation due to decreased transport of long chain acylcarnitines into the mitochondria. The gradual loss of mtDNA in the liver of the TK2(-/-) mice causes impaired mitochondrial function that leads to defect β-oxidation and, as a result, insufficient production of ketone bodies and glucose. This study provides insight into the mechanism of encephalomyopathy caused by TK2 deficiency-induced mtDNA depletion that may be used to explore novel therapeutic strategies.

Emission channeling with short-lived isotopes lattice location of impurities in semiconductors and oxides

CERN Multimedia

We propose to perform emission channeling lattice location experiments in a number of semiconductor and oxide systems of technological relevance: \\\\- The lattice location of the transition metal probes $^{56}$Mn ($\\textit{t}_{1/2}$=2.6 h), $^{59}$Fe (45 d), $^{61}$Co (1.6 h) and $^{65}$Ni (2.5 h) is to be investigated in materials of interest as dilute magnetic semiconductors, such as GaMnAs, GaMnN, GaFeN, AlGaN, SiC, and in a number of oxides that are candidates for “single ion ferromagnetism”, in particular SrTiO$_3$ and LiNbO$_3$.\\\\- The topic of $\\textit{p}$-type doping of nitride semiconductors shall be addressed by studying the lattice sites of the acceptor dopants Mg and Be in GaN and AlN using the short-lived probes $^{27}$Mg (9.5 min) and $^{11}$Be (13.8 s). The aim is to reach a lattice location precision around 0.05 Å in order to provide critical tests for recent theoretical models which e.g. have predicted displacements of the Mg atom from the ideal substitutional Ga and Al sites of the order...

Fractional release of short-lived noble gases and iodine from HTGR fuel compact containing a fraction of coated fuel particles with through-coating defects

International Nuclear Information System (INIS)

Ogawa, Toru; Fukuda, Kosaku; Kobayashi, Fumiaki; Kikuchi, Teruo; Tobita, Tsutomu; Kashimura, Satoru; Kikuchi, Hironobu; Yamamoto, Katsumune.

1986-10-01

Fractional release (R/B) data of short-lived noble gases and iodine from sweep-gas irradiated HTGR fuel compacts were analyzed. Empirical formulas to predict R/B of 88 Kr as a function of temperature and fraction through-coating defects, and to calculate ratios of R/B's of other shortlived gases to that of 88 Kr were proposed. A method to predict R/B of iodine was also proposed. As for 131 I, a fission product of major safety concern, (R/B) I 131 ≅ (R/B) Xe 133 was predicted. Applying those methods, R/B from OGL-1 fuel element (5th and 6th) was predicted to show a good agreement with observation. (author)

O{sup -} bound small polarons in oxide materials

Energy Technology Data Exchange (ETDEWEB)

Schirmer, O F [Department of Physics, University of Osnabrueck, D-49076 Osnabrueck (Germany)

2006-11-01

Holes bound to acceptor defects in oxide crystals are often localized by lattice distortion at just one of the equivalent oxygen ligands of the defect. Such holes thus form small polarons in symmetric clusters of a few oxygen ions. An overview on mainly the optical manifestations of those clusters is given. The article is essentially divided into two parts: the first one covers the basic features of the phenomena and their explanations, exemplified by several paradigmatic defects; in the second part numerous oxide materials are presented which exhibit bound small polaron optical properties. The first part starts with summaries on the production of bound hole polarons and the identification of their structure. It is demonstrated why they show strong, wide absorption bands, usually visible, based on polaron stabilization energies of typically 1 eV. The basic absorption process is detailed with a fictitious two-well system. Clusters with four, six and twelve equivalent ions are realized in various oxide compounds. In these cases several degenerate optically excited polaron states occur, leading to characteristic final state resonance splittings. The peak energies of the absorption bands as well as the sign of the transfer energy depend on the topology of the clusters. A special section is devoted to the distinction between interpolaron and intrapolaron optical transitions. The latter are usually comparatively weak. The oxide compounds exhibiting bound hole small polaron absorptions include the alkaline earth oxides (e.g. MgO), BeO and ZnO, the perovskites BaTiO{sub 3} and KTaO{sub 3}, quartz, the sillenites (e.g. Bi{sub 12}TiO{sub 20}), Al{sub 2}O{sub 3}, LiNbO{sub 3}, topaz and various other materials. There are indications that the magnetic crystals NiO, doped with Li, and LaMnO{sub 3}, doped with Sr, also show optical features caused by bound hole polarons. Beyond being elementary paradigms for the properties of small polarons in general, the defect species treated

Phosphorus doped and defects engineered graphene for improved electrochemical sensing: synergistic effect of dopants and defects

International Nuclear Information System (INIS)

Chu, Ke; Wang, Fan; Tian, Ye; Wei, Zhen

2017-01-01

Heteroatom-doped graphene materials emerged as promising metal-free catalysts have recently attracted a growing interest in electrochemical sensing applications. However, their catalytic activity and sensing performances still need to be further improved. Herein, we reported the development of unique phosphorus (P)-doped and plasma-etched graphene (denoted as PG-E) as an efficient metal-free electrocatalyst for dopamine (DA) sensing. It was demonstrated that introducing both P-dopants and plasma-engineered defects in graphene could synergistically improve the activity toward electrocatalytic oxidation of DA by increasing the accessible active sites and promoting the electron transport capability. The resulting PG-E modified electrode showed exceptional DA sensing performances with low detection limit, high selectivity and good stability. These results suggested that the synergistic effect of dopants and defects might be an important factor for developing the advanced graphene-based metal-free catalysts for electrochemical sensing.

Control of room-temperature defect-mediated ferromagnetism in VO{sub 2} films

Energy Technology Data Exchange (ETDEWEB)

Yang, Tsung-Han, E-mail: tyang3@ncsu.edu [NSF Center for Advanced Materials and Smart Structures, Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC 27695-7907 (United States); Nori, Sudhakar; Mal, Siddhartha; Narayan, Jagdish [NSF Center for Advanced Materials and Smart Structures, Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC 27695-7907 (United States)

2011-09-15

We report interesting ferromagnetic properties and their control in a vanadium-based oxide system driven by stoichiometric defects. Vanadium oxide (VO{sub 2}) thin films were grown on c-plane sapphire substrates by a pulsed laser deposition technique under different ambient conditions. The ferromagnetism of the epitaxial VO{sub 2} films can be switched on and off by altering the cooling ambient parameters. In addition, the saturated magnetic moments and coercivity of the VO{sub 2} films were found to be a function of the oxygen partial pressure during the growth process. The room-temperature ferromagnetic properties of VO{sub 2} films were correlated with the nature of the microstructure and the growth parameters. The origin of the induced magnetic properties are qualitatively understood to stem from intrinsic structural and stoichiometric defects.

Short-term and long-term effects of transient exogenous cortisol manipulation on oxidative stress in juvenile brown trout.

Science.gov (United States)

Birnie-Gauvin, Kim; Peiman, Kathryn S; Larsen, Martin H; Aarestrup, Kim; Willmore, William G; Cooke, Steven J

2017-05-01

In the wild, animals are exposed to a growing number of stressors with increasing frequency and intensity, as a result of human activities and human-induced environmental change. To fully understand how wild organisms are affected by stressors, it is crucial to understand the physiology that underlies an organism's response to a stressor. Prolonged levels of elevated glucocorticoids are associated with a state of chronic stress and decreased fitness. Exogenous glucocorticoid manipulation reduces an individual's ability to forage, avoid predators and grow, thereby limiting the resources available for physiological functions like defence against oxidative stress. Using brown trout ( Salmo trutta ), we evaluated the short-term (2 weeks) and long-term (4 months over winter) effects of exogenous cortisol manipulations (versus relevant shams and controls) on the oxidative status of wild juveniles. Cortisol caused an increase in glutathione over a 2 week period and appeared to reduce glutathione over winter. Cortisol treatment did not affect oxidative stress levels or low molecular weight antioxidants. Cortisol caused a significant decrease in growth rates but did not affect predation risk. Over-winter survival in the stream was associated with low levels of oxidative stress and glutathione. Thus, oxidative stress may be a mechanism by which elevated cortisol causes negative physiological effects. © 2017. Published by The Company of Biologists Ltd.

Confirmation of the Dominant Defect Mechanism in Amorphous In-Zn-O Through the Application of In Situ Brouwer Analysis

Energy Technology Data Exchange (ETDEWEB)

Moffitt, Stephanie L. [Materials Science and Engineering Department, Northwestern University, Evanston Illinois 60208; Adler, Alexander U. [Materials Science and Engineering Department, Northwestern University, Evanston Illinois 60208; Gennett, Thomas [National Renewable Energy Laboratory, Golden Colorado 80401; Ginley, David S. [National Renewable Energy Laboratory, Golden Colorado 80401; Perkins, John D. [National Renewable Energy Laboratory, Golden Colorado 80401; Mason, Thomas O. [Materials Science and Engineering Department, Northwestern University, Evanston Illinois 60208; Zhou, X. -D.

2015-04-08

The dominant point defect mechanism of amorphous (a-) indium zinc oxide (IZO) was probed through in situ electrical characterization of sputtered a-IZO thin films in response to changes in oxygen partial pressure (pO2) at 300 degrees C. The results yielded a power law dependence of conductivity (s) versus pOinline image of ~-1/6. This experimental method, known as Brouwer analysis, confirms doubly-charged oxygen vacancies as the dominant defect species in a-IZO. The success of this study suggests that Brouwer analysis is a viable method for studying the defect mechanisms of amorphous oxides.

Layer-by-Layer Epitaxial Growth of Defect-Engineered Strontium Cobaltites

Energy Technology Data Exchange (ETDEWEB)

Andersen, Tassie K. [Materials Science; Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208, United States; Cook, Seyoung [Materials Science; Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208, United States; Wan, Gang [Materials Science; Hong, Hawoong [Advanced Photon Source, Argonne National Laboratory, Argonne, Illinois 60439, United States; Marks, Laurence D. [Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208, United States; Fong, Dillon D. [Materials Science

2018-01-31

Control over structure and composition of (ABO(3)) perovskite oxides offers exciting opportunities since these materials possess unique, tunable properties. Perovskite oxides with cobalt B-site cations are particularly promising, as the range of the cations stable oxidation states leads to many possible structural frameworks. Here, we report growth of strontium cobalt oxide thin films by molecular beam epitaxy, and conditions necessary to stabilize different defect concentration phases. In situ X-ray scattering is used to monitor structural evolution during growth, while in situ X-ray absorption near-edge spectroscopy is used to probe oxidation state and measure changes to oxygen vacancy concentration as a function of film thickness. Experimental results are compared to kinetically limited thermodynamic predictions, in particular, solute trapping, with semiquantitative agreement. Agreement between observations of dependence of cobaltite phase on oxidation activity and deposition rate, and predictions indicates that a combined experimental/theoretical approach is key to understanding phase behavior in the strontium cobalt oxide system.

On short cracks that depart from elastoplastic notch tips

Directory of Open Access Journals (Sweden)

Verônica Miquelin Machado

2017-07-01

Full Text Available The behavior of short cracks that depart from elastoplastic notch tips is modeled to estimate the stresses required to initiate and to propagate cracks in notched structural components, and to evaluate the size of tolerable crack-like defects under general loading conditions. This analysis can model both fatigue and environmentally assisted cracking problems; can evaluate notch sensitivity in both cases; and can as well be used to establish design or acceptance criteria for tolerable non-propagating crack-like defects in such cases. The growth of short cracks is assumed driven by the applied stresses and by the stress gradient ahead the notch tip, and supported by the material resistances to crack initiation and to long crack propagation by fatigue or EAC. In the elastoplastic case, the stress gradient ahead of the notch tip is quantified by a J-field to consider the short crack behavior. The tolerable short crack predictions made by this model are evaluated by suitable fatigue and EAC tests of notched specimens specially designed to start nonpropagating cracks from the notch tips, both under elastic and elastoplastic conditions.

Influence of coating defects on the corrosion behavior of cold sprayed refractory metals

International Nuclear Information System (INIS)

Kumar, S.; Rao, A. Arjuna

2017-01-01

Highlights: • Long duration immersion tests reveal inhomogeneous weight losses. • The weight loss for different coatings are well corroborated with the coating defects. • Chemical and micro structural analysis elucidates the reason behind the in homogeneous performance of different type of cold sprayed coatings. • In cold sprayed titanium, formation of oxide along the inter-splat boundary hinders the aggressive attack of the medium. - Abstract: The defects in the cold sprayed coatings are critical in the case of corrosion performances of the coatings in aggressive conditions. To understand the influence of coating defects on corrosion, immersion tests have been carried out in HF solution for the cold sprayed and heat treated Titanium, Tantalum and Niobium coatings. Long duration immersion tests reveal inhomogeneous weight losses of the samples prepared at different heat treatment conditions. The weight loss for different coatings has been well corroborated with the coating defects and microstructures. Chemical and micro structural analysis elucidates the reason behind the inhomogeneous performance of different type of cold sprayed coatings in corrosion medium. In the case of cold sprayed titanium, formation of stable oxide along the inter-splat boundary hinders the aggressive attack of the corrosion medium which is not so in other cases.

The Effects of Oxidation Layer, Temperature, and Stress on Tin Whisker Growth: A Short Review

Science.gov (United States)

Mahim, Z.; Salleh, M. A. A.; Khor, C. Y.

2018-03-01

In order to reduce the Tin (Sn) whisker growth phenomenon in solder alloys, the researcher all the world has studied the factor of this behaviour. However, this phenomenon still hunted the electronic devices and industries. The whiskers growth were able to cause the electrical short, which would lead to the catastrophic such as plane crush, the failure of heart pacemaker, and the lost satellite connection. This article focuses on the three factors that influence the whiskers growth in solder alloys which is stress, oxidation layer and temperature. This findings were allowed the researchers to develop various method on how to reduce the growth of the Sn whiskers.

Mechanical tearing of graphene on an oxidizing metal surface

International Nuclear Information System (INIS)

George, Lijin; Gupta, Aparna; Shaina, P R; Jaiswal, Manu; Gupta, Nandita Das

2015-01-01

Graphene, the thinnest possible anticorrosion and gas-permeation barrier, is poised to transform the protective coatings industry for a variety of surface applications. In this work, we have studied the structural changes of graphene when the underlying copper surface undergoes oxidation upon heating. Single-layer graphene directly grown on a copper surface by chemical vapour deposition was annealed under ambient atmosphere conditions up to 400 °C. The onset temperature of the surface oxidation of copper is found to be higher for graphene-coated foils. Parallel arrays of graphene nanoripples are a ubiquitous feature of pristine graphene on copper, and we demonstrate that these form crucial sites for the onset of the oxidation of copper, particularly for ∼0.3–0.4 μm ripple widths. In these regions, the oxidation proceeds along the length of the nanoripples, resulting in the formation of parallel stripes of oxidized copper regions. We demonstrate from temperature-dependent Raman spectroscopy that the primary defect formation process in graphene involves boundary-type defects rather than vacancy or sp"3-type defects. This observation is consistent with a mechanical tearing process that splits graphene into small polycrystalline domains. The size of these is estimated to be sub-50 nm. (paper)

Mechanical tearing of graphene on an oxidizing metal surface.

Science.gov (United States)

George, Lijin; Gupta, Aparna; Shaina, P R; Das Gupta, Nandita; Jaiswal, Manu

2015-12-11

Graphene, the thinnest possible anticorrosion and gas-permeation barrier, is poised to transform the protective coatings industry for a variety of surface applications. In this work, we have studied the structural changes of graphene when the underlying copper surface undergoes oxidation upon heating. Single-layer graphene directly grown on a copper surface by chemical vapour deposition was annealed under ambient atmosphere conditions up to 400 °C. The onset temperature of the surface oxidation of copper is found to be higher for graphene-coated foils. Parallel arrays of graphene nanoripples are a ubiquitous feature of pristine graphene on copper, and we demonstrate that these form crucial sites for the onset of the oxidation of copper, particularly for ∼0.3-0.4 μm ripple widths. In these regions, the oxidation proceeds along the length of the nanoripples, resulting in the formation of parallel stripes of oxidized copper regions. We demonstrate from temperature-dependent Raman spectroscopy that the primary defect formation process in graphene involves boundary-type defects rather than vacancy or sp(3)-type defects. This observation is consistent with a mechanical tearing process that splits graphene into small polycrystalline domains. The size of these is estimated to be sub-50 nm.

Physical exercise prevents short and long-term deficits on aversive and recognition memory and attenuates brain oxidative damage induced by maternal deprivation.

Science.gov (United States)

Neves, Ben-Hur; Menezes, Jefferson; Souza, Mauren Assis; Mello-Carpes, Pâmela B

2015-12-01

It is known from previous research that physical exercise prevents long-term memory deficits induced by maternal deprivation in rats. But we could not assume similar effects of physical exercise on short-term memory, as short- and long-term memories are known to result from some different memory consolidation processes. Here we demonstrated that, in addition to long-term memory deficit, the short-term memory deficit resultant from maternal deprivation in object recognition and aversive memory tasks is also prevented by physical exercise. Additionally, one of the mechanisms by which the physical exercise influences the memory processes involves its effects attenuating the oxidative damage in the maternal deprived rats' hippocampus and prefrontal cortex.

A study of process-related electrical defects in SOI lateral bipolar transistors fabricated by ion implantation

Science.gov (United States)

Yau, J.-B.; Cai, J.; Hashemi, P.; Balakrishnan, K.; D'Emic, C.; Ning, T. H.

2018-04-01

We report a systematic study of process-related electrical defects in symmetric lateral NPN transistors on silicon-on-insulator (SOI) fabricated using ion implantation for all the doped regions. A primary objective of this study is to see if pipe defects (emitter-collector shorts caused by locally enhanced dopant diffusion) are a show stopper for such bipolar technology. Measurements of IC-VCE and Gummel currents in parallel-connected transistor chains as a function of post-fabrication rapid thermal anneal cycles allow several process-related electrical defects to be identified. They include defective emitter-base and collector-base diodes, pipe defects, and defects associated with a dopant-deficient region in an extrinsic base adjacent its intrinsic base. There is no evidence of pipe defects being a major concern in SOI lateral bipolar transistors.

Intrinsic and defect related luminescence in double oxide films of Al–Hf–O system under soft X-ray and VUV excitation

Energy Technology Data Exchange (ETDEWEB)

Pustovarov, V.A., E-mail: vpustovarov@bk.ru [Ural Federal University, 19 Mira Street, 620002 Yekaterinburg (Russian Federation); Smirnova, T.P.; Lebedev, M.S. [Nikolaev Institute of Inorganic Chemistry, Siberian Branch of Russian Academy of Science, Novosibirsk 630090 (Russian Federation); Gritsenko, V.A. [Institute of Semiconductor Physics, Siberian Branch of Russian Academy of Sciences, Novosibirsk 630090 (Russian Federation); Novosibirsk National Research University, 2 Pirogova Street, 630090 Novosibirsk (Russian Federation); Kirm, M. [Institute of Physics, University of Tartu, 14c Ravila, 50411 Tartu (Estonia)

2016-02-15

Low temperature time-resolved luminescence spectra in the region of 2.5–9.5 eV under soft X-ray excitation as well as time-resolved luminescence excitation spectra in the UV–VUV region (3.7–12 eV) of solid solutions Al{sub x}Hf{sub y}O{sub 1−x−y} thin films were investigated. The values of x and Al/Hf ratio were determined from X-ray photoelectron srectroscopy data. Hafnia films and films mixed with alumina were grown in a flow-type chemical vapor deposition reactor with argon as a carrier gas. In addition, pure alumina films were prepared by the atomic layer deposition method. A strong emission band with the peak position at 4.4 eV and with the decay time in the μs-range was revealed for pure hafnia films. The emission peak at 7.74 eV with short nanosecond decay kinetics was observed in the luminescence spectra for pure alumina films. These emission bands were ascribed to the radiative decay of self-trapped excitons (an intrinsic luminescence) in pure HfO{sub 2} and Al{sub 2}O{sub 3} films, respectively. Along with intrinsic host emission, defect related luminescence bands with a larger Stokes shift were observed. In the emission spectra of the solid solution films (x=4; 17; 20 at%) the intrinsic emission bands are quenched and only the luminescence of defects (an anion vacancies) was observed. Based on transformation of the luminescence spectra and ns-luminescence decay kinetics, as well as changes in the time-resolved luminescence and luminescence excitation spectra, the relaxation processes in the films of solid solution are discussed. - Highlights: • Low temperature time−resolved PL spectra were studied in a broad range (1.5−9.5 eV). • We carried out a luminescent control of point defects (anion vacancies) and self−trapped excitons. • We observed photoluminescence of excitons bound on defects. • We observed changes of photoluminescence properties with varying ratio components.

Changes in oxidative stress parameters in relation to age, growth and reproduction in the short-lived catarina scallop Argopecten ventricosus reared in its natural environment.

Science.gov (United States)

Guerra, C; Zenteno-Savín, T; Maeda-Martínez, A N; Philipp, E E R; Abele, D

2012-08-01

Increase in oxidative damage and decrease in cellular maintenance is often associated with aging, but, in marine ectotherms, both processes are also strongly influenced by somatic growth, maturation and reproduction. In this study, we used a single cohort of the short-lived catarina scallop Argopecten ventricosus, to investigate the effects of somatic growth, reproduction and aging on oxidative damage parameters (protein carbonyls, TBARS and lipofuscin) and cellular maintenance mechanisms (antioxidant activity and apoptosis) in scallops, caged in their natural environment. The concentrations of protein carbonyls and TBARS increased steeply during the early period of fast growth and during reproduction in one-year-old scallops. However, oxidative damage was transient, and apoptotic cell death played a pivotal role in eliminating damage in gill, mantle and muscle tissues of young scallops. Animals were able to reproduce again in the second year, but the reduced intensity of apoptosis impaired subsequent removal of damaged cells. In late survivors low antioxidant capacity and apoptotic activity together with a fast accumulation of the age pigment lipofuscin was observed. Rates of oxygen consumption and oxidative stress markers were strongly dependent on somatic growth and reproductive state but not on temperature. Compared to longer-lived bivalves, A. ventricosus seems more susceptible to oxidative stress with higher tissue-specific protein carbonyl levels and fast accumulation of lipofuscin in animals surviving the second spawning. Superoxide dismutase activity and apoptotic cell death intensity were however higher in this short-lived scallop than in longer-lived bivalves. The life strategy of this short-lived and intensely predated scallop supports rapid somatic growth and fitness as well as early maturation at young age at the cost of fast cellular degradation in second year scallops. Copyright © 2012 Elsevier Inc. All rights reserved.

Implications of electronic short circuiting in plasma sprayed solid oxide fuel cells on electrode performance evaluation by electrochemical impedance spectroscopy

Energy Technology Data Exchange (ETDEWEB)

White, B.D. [Department of Mechanical Engineering, The University of British Columbia, 2054-6250 Applied Sciences Lane, Vancouver, British Columbia (Canada); Kesler, O. [Department of Mechanical and Industrial Engineering, University of Toronto, 5 King' s College Road, Toronto, Ontario (Canada)

2008-02-15

Electronic short circuiting of the electrolyte in a solid oxide fuel cell (SOFC) arising from flaws in the plasma spray fabrication process has been found to have a significant effect on the perceived performance of the electrodes, as evaluated by electrochemical impedance spectroscopy (EIS). The presence of a short circuit has been found to lead to the underestimation of the electrode polarization resistance (R{sub p}) and hence an overestimation of electrode performance. The effect is particularly noticeable when electrolyte resistance is relatively high, for example during low to intermediate temperature operation, leading to an obvious deviation from the expected Arrhenius-type temperature dependence of R{sub p}. A method is developed for determining the real electrode performance from measurements of various cell properties, and strategies for eliminating the occurrence of short circuiting in plasma sprayed cells are identified. (author)

Implications of electronic short circuiting in plasma sprayed solid oxide fuel cells on electrode performance evaluation by electrochemical impedance spectroscopy

Science.gov (United States)

White, B. D.; Kesler, O.

Electronic short circuiting of the electrolyte in a solid oxide fuel cell (SOFC) arising from flaws in the plasma spray fabrication process has been found to have a significant effect on the perceived performance of the electrodes, as evaluated by electrochemical impedance spectroscopy (EIS). The presence of a short circuit has been found to lead to the underestimation of the electrode polarization resistance (R p) and hence an overestimation of electrode performance. The effect is particularly noticeable when electrolyte resistance is relatively high, for example during low to intermediate temperature operation, leading to an obvious deviation from the expected Arrhenius-type temperature dependence of R p. A method is developed for determining the real electrode performance from measurements of various cell properties, and strategies for eliminating the occurrence of short circuiting in plasma sprayed cells are identified.

Blocked muscle fat oxidation during exercise in neutral lipid storage disease

DEFF Research Database (Denmark)

Laforêt, Pascal; Ørngreen, Mette; Preisler, Nicolai

2012-01-01

To determine whether impaired exercise capacity in neutral lipid storage disease with myopathy is solely caused by muscle weakness or whether a defect in energy metabolism (blocked fat oxidation) may also play a role.......To determine whether impaired exercise capacity in neutral lipid storage disease with myopathy is solely caused by muscle weakness or whether a defect in energy metabolism (blocked fat oxidation) may also play a role....

Layer Dependence of Graphene for Oxidation Resistance of Cu Surface

Institute of Scientific and Technical Information of China (English)

Yu-qing Song; Xiao-ping Wang

2017-01-01

We studied the oxidation resistance of graphene-coated Cu surface and its layer dependence by directly growing monolayer graphene with different multilayer structures coexisted,diminishing the influence induced by residue and transfer technology.It is found that the Cu surface coated with the monolayer graphene demonstrate tremendous difference in oxidation pattern and oxidation rate,compared to that coated with the bilayer graphene,which is considered to be originated from the strain-induced linear oxidation channel in monolayer graphene and the intersection of easily-oxidized directions in each layer of bilayer graphene,respectively.We reveal that the defects on the graphene basal plane but not the boundaries are the main oxidation channel for Cu surface under graphene protection.Our finding indicates that compared to putting forth efforts to improve the quality of monolayer graphene by reducing defects,depositing multilayer graphene directly on metal is a simple and effective way to enhance the oxidation resistance of graphene-coated metals.

Radiation induced leakage current and stress induced leakage current in ultra-thin gate oxides

International Nuclear Information System (INIS)

Ceschia, M.; Paccagnella, A.; Cester, A.; Scarpa, A.

1998-01-01

Low-field leakage current has been measured in thin oxides after exposure to ionizing radiation. This Radiation Induced Leakage Current (RILC) can be described as an inelastic tunneling process mediated by neutral traps in the oxide, with an energy loss of about 1 eV. The neutral trap distribution is influenced by the oxide field applied during irradiation, thus indicating that the precursors of the neutral defects are charged, likely being defects associated to trapped holes. The maximum leakage current is found under zero-field condition during irradiation, and it rapidly decreases as the field is enhanced, due to a displacement of the defect distribution across the oxide towards the cathodic interface. The RILC kinetics are linear with the cumulative dose, in contrast with the power law found on electrically stressed devices

Defect-induced ferromagnetism in semiconductors: A controllable approach by particle irradiation

International Nuclear Information System (INIS)

Zhou, Shengqiang

2014-01-01

Making semiconductors ferromagnetic has been a long dream. One approach is to dope semiconductors with transition metals (TM). TM ions act as local moments and they couple with free carriers to develop collective magnetism. However, there are no fundamental reasons against the possibility of local moment formation from localized sp states. Recently, ferromagnetism was observed in nonmagnetically doped, but defective semiconductors or insulators including ZnO and TiO 2 . This kind of observation challenges the conventional understanding of ferromagnetism. Often the defect-induced ferromagnetism has been observed in samples prepared under non-optimized condition, i.e. by accident or by mistake. Therefore, in this field theory goes much ahead of experimental investigation. To understand the mechanism of the defect-induced ferromagnetism, one needs a better controlled method to create defects in the crystalline materials. As a nonequilibrium and reproducible approach of inducing defects, ion irradiation provides such a possibility. Energetic ions displace atoms from their equilibrium lattice sites, thus creating mainly vacancies, interstitials or antisites. The amount and the distribution of defects can be controlled by the ion fluence and energy. By ion irradiation, we have generated defect-induced ferromagnetism in ZnO, TiO 2 and SiC. In this short review, we also summarize some results by other groups using energetic ions to introduce defects, and thereby magnetism in various materials. Ion irradiation combined with proper characterizations of defects could allow us to clarify the local magnetic moments and the coupling mechanism in defective semiconductors. Otherwise we may have to build a new paradigm to understand the defect-induced ferromagnetism

Diminished stress resistance and defective adaptive homeostasis in age-related diseases.

Science.gov (United States)

Lomeli, Naomi; Bota, Daniela A; Davies, Kelvin J A

2017-11-01

Adaptive homeostasis is defined as the transient expansion or contraction of the homeostatic range following exposure to subtoxic, non-damaging, signaling molecules or events, or the removal or cessation of such molecules or events ( Mol. Aspects Med. (2016) 49, 1-7 ). Adaptive homeostasis allows us to transiently adapt (and then de-adapt) to fluctuating levels of internal and external stressors. The ability to cope with transient changes in internal and external environmental stress, however, diminishes with age. Declining adaptive homeostasis may make older people more susceptible to many diseases. Chronic oxidative stress and defective protein homeostasis (proteostasis) are two major factors associated with the etiology of age-related disorders. In the present paper, we review the contribution of impaired responses to oxidative stress and defective adaptive homeostasis in the development of age-associated diseases. © 2017 The Author(s). Published by Portland Press Limited on behalf of the Biochemical Society.

The Behaviour of Bifilm Defects in Cast Al-7Si-Mg Alloy.

Science.gov (United States)

El-Sayed, Mahmoud Ahmed

2016-01-01

Double oxide films (bifilms) are significant defects in the casting of light alloys, and have been shown to decrease tensile and fatigue properties, and also to increase their scatter, making casting properties unreproducible and unreliable. A bifilm consists of doubled-over oxide films containing a gas-filled crevice and is formed due to surface turbulence of the liquid metal during handling and/or pouring. Previous studies has shown that the nature of oxide film defects may change with time, as the atmosphere inside the bifilm could be consumed by reaction with the surrounding melt, which may enhance the mechanical properties of Al alloy castings. As a proxy for a bifilm, an air bubble was trapped within an Al-7wt.%Si-0.3wt.%Mg (2L99) alloy melt, subjected to stirring. The effect of different parameters such as the holding time, stirring velocity and melt temperature on the change in gas composition of the bubble was investigated, using a design of experiments (DoE) approach. Also, the solid species inside the bubbles solidified in the melt were examined using SEM. The results suggested that both oxygen and nitrogen inside the bifilm would be consumed by reaction with the surrounding melt producing MgAl2O4 and AlN, respectively. Also, hydrogen was suggested to consistently diffuse into the defect. The reaction rates and the rate of H diffusion were shown to increase upon increasing the holding time and temperature, and stirring velocity. Such significant effect of the process parameters studied on the gaseous content of the bubble suggesting that a careful control of such parameters might lead to the deactivation of bifilm defects, or at least elimination of their deteriorous effect in light alloy castings.

Simulation of synaptic short-term plasticity using Ba(CF3SO3)2-doped polyethylene oxide electrolyte film.

Science.gov (United States)

Chang, C T; Zeng, F; Li, X J; Dong, W S; Lu, S H; Gao, S; Pan, F

2016-01-07

The simulation of synaptic plasticity using new materials is critical in the study of brain-inspired computing. Devices composed of Ba(CF3SO3)2-doped polyethylene oxide (PEO) electrolyte film were fabricated and with pulse responses found to resemble the synaptic short-term plasticity (STP) of both short-term depression (STD) and short-term facilitation (STF) synapses. The values of the charge and discharge peaks of the pulse responses did not vary with input number when the pulse frequency was sufficiently low(~1 Hz). However, when the frequency was increased, the charge and discharge peaks decreased and increased, respectively, in gradual trends and approached stable values with respect to the input number. These stable values varied with the input frequency, which resulted in the depressed and potentiated weight modifications of the charge and discharge peaks, respectively. These electrical properties simulated the high and low band-pass filtering effects of STD and STF, respectively. The simulations were consistent with biological results and the corresponding biological parameters were successfully extracted. The study verified the feasibility of using organic electrolytes to mimic STP.

Defect mediated reversible ferromagnetism in Co and Mn doped zinc oxide epitaxial films

Energy Technology Data Exchange (ETDEWEB)

Mal, Siddhartha; Nori, Sudhakar; Narayan, J. [Department of Material Science and Engineering, North Carolina State University, Raleigh, North Carolina 27695 (United States); Mula, Suhrit [Department of Material Science and Engineering, North Carolina State University, Raleigh, North Carolina 27695 (United States); Department of Metallurgical and Materials Engineering, National Institute of Technology, Rourkela 769008 (India); Prater, J. T. [Materials Science Division, Army Research Office, Research Triangle Park, North Carolina 27709 (United States)

2012-12-01

We have introduced defects in ZnO (undoped and doped with Co and Mn) epitaxial thin films using laser irradiation from nanosecond laser pulses and thermal annealing in oxygen ambient. In contrast to the as grown samples, the laser irradiated films show a significant increase in conductivity, enhancement in UV emission, while maintaining the same wurtzite crystal structure. Room-temperature ferromagnetism (RTFM) is observed in laser-irradiated samples, which increased with the number of laser pulses up to a certain value where magnetic moment saturates. The induced ferromagnetism as well as the enhanced electrical conductivity can be reversed with thermal annealing in oxygen ambient. The magnetization in Co and Mn doped films was found to be strong function of growth conditions and defect concentration. X-ray diffraction and optical absorption experiments suggested a 2+ valance state and tetrahedral coordination for both Co and Mn ions. There is a simultaneous increase in n-type electrical conductivity with the number of laser pulses and continue to exhibit semiconducting behavior in both undoped and doped films. The saturation magnetization was found to be 0.08 {mu}{sub B}/Co and 0.05 {mu}{sub B}/Mn, much lower than 3.0 {mu}{sub B}/Co and 5.0 {mu}{sub B}/Mn, indicating the prominent role of intrinsic defects in RTFM with some contribution from Co{sup 2+}-oxygen vacancy complexes. We propose a unified mechanism based upon introduction of intrinsic defects to explain RTFM and n-type conductivity enhancements during pulsed laser and thermal annealing.

Molecular dynamics simulation on the formation and annihilation behaviors of radiation defects in Li2O

International Nuclear Information System (INIS)

Takuji Oda; Satoru Tanaka; Yasuhisa Oya

2006-01-01

The influence of radiation defects is one of the main factors that determine tritium release behavior from blanket breeding materials in fusion reactors. Classical molecular dynamics simulation (MD) is a powerful technique to investigate the radiation damage processes, because it can provide atomic-scale information on the defects. In this study, we conducted radiation simulation for Li 2 O using MD and analyzed formation and annihilation behaviors of radiation defects, as a fundamental research for radiation response of Li-containing oxides. Buckingham type two-body potential model was used. In order to remove the unphysical impulsive force at short inter-ionic distances in Buckingham model, each potential function was connected to that of the ZBL potential models at around 0.8 A. NEV ensemble was employed with the initial simulation temperature of 0 K. 10 x 10 x 10 supercell consisting of 4000 Li 2 O was used as a unit cell under 3D periodic boundary conditions. Radiation simulation was initiated by introducing an energy of a certain direction to an ion, as a displacement energy. The lowest displacement energy by which a defect was created and survived beyond 5 ps was regarded as the threshold energy. 42 and 21 displacement directions were surveyed for Li and O, respectively, based on the symmetry of the Li 2 O crystal. In both Li and O defect formations, [100] displacement shows significantly lower threshold energy than [111] displacement. Li defects were easily created than O defects almost in all directions. In fact, the average threshold energy except [111] displacement, which possesses extremely high threshold energy, was 21 eV for Li and 49 eV for O. In some cases, no defect could survive beyond 5 ps even by higher displacement energies than the threshold energy, due to the self-annealing effect. The self-annealing completed basically within 1 ps after introduction of displacement energy. At around this time, velocity distribution of all ions in the system

Influence of Cast Iron Structure on the Glassmold Equipment Operational Defects

Directory of Open Access Journals (Sweden)

I. O. Leushin

2015-01-01

Full Text Available The growing demand for glass packaging contributes to the increase in production capacity of glass-container plants. Their equipment (cast iron glass-forming sets operates in continuous mode under complex cyclic thermal loads, which lead to the formation of operational defects on the working surfaces of details: graphite falling, cracks, oxidation, etc. Particular influence on the formation of these defects renders the microstructure of the material at the time of installation of details on the line.The article identifies the causes for formation of operational defects, formulates the ways to remedy them and prevent their occurrence.The authors studied details made from grey cast iron with flake and spherical forms of graphite. It is found that in the process of exploitation of the material is greatly reducing its hardness, strength, resistance to oxidation through of graphitization processes, chemical interaction of glass and iron, shock loads working edges. It is proved that the choice of initial microstructure of cast iron (the metal base, the graphite form, the presence of structural-free cementite exercises a determining influence on the durability of the mold tooling. The article proposes differential (layered arrangement of the graphite phase of cast iron in the alloy matrix (ferrite. This arrangement of high-carbon phase can simultaneously increase the thermal and oxidation resistance of the material. The formation of a layered structure of iron is produced by the intensification of the processes of alloying, modifying and directional freezing the melt.These data can be used to select the material of details by manufacturers glass-molds tooling.

Idiopathic short stature

Directory of Open Access Journals (Sweden)

Vlaški Jovan

2013-01-01

Full Text Available Growth is a complex process and the basic characteristic of child- hood growth monitoring provides insight into the physiological and pathological events in the body. Statistically, the short stature means departure from the values of height for age and sex (in a particular environment, which is below -2 standard deviation score, or less than -2 standard deviation, i.e. below the third percentile. Advances in molecular genetics have contributed to the improvement of diagnostics in endocrinology. Analysis of patients’ genotypes should not be performed before taking a classical history, detailed clinical examination and appropriate tests. In patients with idiopathic short stature specific causes are excluded, such as growth hormone deficiency, Turner syndrome, short stature due to low birth weight, intrauterine growth retardation, small for gestational age, dysmorphology syndromes and chronic childhood diseases. The exclusion of abovementioned conditions leaves a large number of children with short stature whose etiology includes patients with genetic short stature or familial short stature and those who are low in relation to genetic potential, and who could also have some unrecognized endocrine defect. Idiopathic short stature represents a short stature of unknown cause of heterogeneous etiology, and is characterized by a normal response of growth hormone during stimulation tests (>10 ng/ml or 20 mJ/l, without other disorders, of normal body mass and length at birth. In idiopathic short stature standard deviation score rates <-2.25 (-2 to -3 or <1.2 percentile. These are also criteria for the initiation of growth hormone therapy. In children with short stature there is also the presence of psychological and social suffering. Goals of treatment with growth hormone involve achieving normal height and normal growth rate during childhood.

Genetic defects in the oxidative phosphorylation (OXPHOS) system.

NARCIS (Netherlands)

Janssen, R.J.R.J.; Heuvel, L.P.W.J. van den; Smeitink, J.A.M.

2004-01-01

The oxidative phosphorylation (OXPHOS) system consists of five multiprotein complexes and two mobile electron carriers embedded in the lipid bilayer of the mitochondrial inner membrane. With the exception of complex II and the mobile carriers, the other parts of the OXPHOS system are under dual

Study of the defect structure of ''pure'' and doped nonstoichiometric CeO2. Final report, January 1, 1965--May 31, 1977

International Nuclear Information System (INIS)

Blumenthal, R.N.

1977-11-01

The defect structure and transport properties of defects in nonstoichiometric oxides was studied based on their electrical and thermodynamic behavior. Similar studies were also made on doped-nonstoichiometric oxides to determine the effect of the ionic radii, valence and concentration of the dopant cation on the nonstoichiometric defect structure and the transport properties of these defects. The thermodynamic and electrical property study on ''pure'' and doped-nonstoichiometric CeO 2 /sub -x/ is reviewed. The combined study of the electrical conductivity, ionic transference, and thermodynamic measurements initiated on CaO-doped CeO 2 as a function of temperature, oxygen pressure and CaO content is discussed. The results of similar measurements on CeO 2 doped with other oxides (e.g., ThO 2 , Ta 2 O 5 , etc.) which have cations with different valences and ionic radii are also discussed. The primary objective of these studies was to determine the effect of ionic radii, valence and concentration of the dopant cation on (1) the nonstoichiometric behavior, (2) the thermodynamic quantities ΔantiH/sub O 2 / and ΔantiS/sub O 2 /, (3) the nonstoichiometric defect structure, (4) the electronic and ionic conductivities, and (5) the mobility of electrons and oxygen vacancies in doped CeO 2 /sub -x/

Anodic luminescence, structural, photoluminescent, and photocatalytic properties of anodic oxide films grown on niobium in phosphoric acid

Energy Technology Data Exchange (ETDEWEB)

Stojadinović, Stevan, E-mail: sstevan@ff.bg.ac.rs [University of Belgrade, Faculty of Physics, Studentski trg 12-16, 11000 Belgrade (Serbia); Tadić, Nenad [University of Belgrade, Faculty of Physics, Studentski trg 12-16, 11000 Belgrade (Serbia); Radić, Nenad [University of Belgrade, Institute of Chemistry, Technology and Metallurgy, Department of Catalysis and Chemical Engineering, Njegoševa 12, 11000 Belgrade (Serbia); Stefanov, Plamen [Institute of General and Inorganic Chemistry, Bulgarian Academy of Sciences, Acad. G. Bonchev Str., Block 11, 1113 Sofia (Bulgaria); Grbić, Boško [University of Belgrade, Institute of Chemistry, Technology and Metallurgy, Department of Catalysis and Chemical Engineering, Njegoševa 12, 11000 Belgrade (Serbia); Vasilić, Rastko [University of Belgrade, Faculty of Physics, Studentski trg 12-16, 11000 Belgrade (Serbia)

2015-11-15

Graphical abstract: - Highlights: • Anodic luminescence is correlated to the existence of morphological defects in the oxide. • Spectrum under spark discharging reveals only oxygen and hydrogen lines. • Oxide films formed under spark discharging are crystallized and composed of Nb{sub 2}O{sub 5}. • Photocatalytic activity and photoluminescence of Nb{sub 2}O{sub 5} films increase with time. - Abstract: This article reports on properties of oxide films obtained by anodization of niobium in phosphoric acid before and after the dielectric breakdown. Weak anodic luminescence of barrier oxide films formed during the anodization of niobium is correlated to the existence of morphological defects in the oxide layer. Small sized sparks generated by dielectric breakdown of formed oxide film cause rapid increase of luminescence intensity. The luminescence spectrum of obtained films on niobium under spark discharging is composed of continuum radiation and spectral lines caused by electronic spark discharging transitions in oxygen and hydrogen atoms. Oxide films formed before the breakdown are amorphous, while after the breakdown oxide films are partly crystalline and mainly composed of Nb{sub 2}O{sub 5} hexagonal phase. The photocatalytic activity of obtained oxide films after the breakdown was investigated by monitoring the degradation of methyl orange. Increase of the photocatalytic activity with time is related to an increase of oxygen vacancy defects in oxide films formed during the process. Also, higher concentration of oxygen vacancy defects in oxide films results in higher photoluminescence intensity.

Defects and Interfaces on PtPb Nanoplates Boost Fuel Cell Electrocatalysis.

Science.gov (United States)

Sun, Yingjun; Liang, Yanxia; Luo, Mingchuan; Lv, Fan; Qin, Yingnan; Wang, Lei; Xu, Chuan; Fu, Engang; Guo, Shaojun

2018-01-01

Nanostructured Pt is the most efficient single-metal catalyst for fuel cell technology. Great efforts have been devoted to optimizing the Pt-based alloy nanocrystals with desired structure, composition, and shape for boosting the electrocatalytic activity. However, these well-known controls still show the limited ability in maximizing the Pt utilization efficiency for achieving more efficient fuel cell catalysis. Herein, a new strategy for maximizing the fuel cell catalysis by controlling/tuning the defects and interfaces of PtPb nanoplates using ion irradiation technique is reported. The defects and interfaces on PtPb nanoplates, controlled by the fluence of incident C + ions, make them exhibit the volcano-like electrocatalytic activity for methanol oxidation reaction (MOR), ethanol oxidation reaction (EOR), and oxygen reduction reaction (ORR) as a function of ion irradiation fluence. The optimized PtPb nanoplates with the mixed structure of dislocations, subgrain boundaries, and small amorphous domains are the most active for MOR, EOR, and ORR. They can also maintain high catalytic stability in acid solution. This work highlights the impact and significance of inducing/controlling the defects and interfaces on Pt-based nanocrystals toward maximizing the catalytic performance by advanced ion irradiation strategy. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Vertebral defect, anal atresia, cardiac defect, tracheoesophageal fistula/esophageal atresia, renal defect, and limb defect association with Mayer-Rokitansky-Küster-Hauser syndrome in co-occurrence

DEFF Research Database (Denmark)

Bjørsum-Meyer, Thomas; Herlin, Morten; Qvist, Niels

2016-01-01

Background: The vertebral defect, anal atresia, cardiac defect, tracheoesophageal fistula/esophageal atresia, renal defect, and limb defect association and Mayer-Rokitansky-Küster-Hauser syndrome are rare conditions. We aimed to present two cases with the vertebral defect, anal atresia, cardiac...... defect, tracheoesophageal fistula/esophageal atresia, renal defect, and limb defect association and Mayer-Rokitansky-Küster-Hauser co-occurrence from our local surgical center and through a systematic literature search detect published cases. Furthermore, we aimed to collect existing knowledge...... in the embryopathogenesis and genetics in order to discuss a possible link between the vertebral defect, anal atresia, cardiac defect, tracheoesophageal fistula/esophageal atresia, renal defect, and limb defect association and Mayer-Rokitansky-Küster-Hauser syndrome. Case presentation: Our first case was a white girl...

Investigation of the crystal lattice defects by means of the positrons annihilations

International Nuclear Information System (INIS)

Dryzek, J.

1994-01-01

In this report the positrons annihilation methods as a tool for the crystal defects studies is presented. The short description of the positron - crystal interactions and different positron capture models are discussed. 192 refs, 67 figs, 6 tabs

Modelling water vapour permeability through atomic layer deposition coated photovoltaic barrier defects

Energy Technology Data Exchange (ETDEWEB)

Elrawemi, Mohamed, E-mail: Mohamed.elrawemi@hud.ac.uk [EPSRC Centre for Innovative Manufacturing in Advanced Metrology, School of Computing and Engineering, University of Huddersfield, Huddersfield (United Kingdom); Blunt, Liam; Fleming, Leigh [EPSRC Centre for Innovative Manufacturing in Advanced Metrology, School of Computing and Engineering, University of Huddersfield, Huddersfield (United Kingdom); Bird, David, E-mail: David.Bird@uk-cpi.com [Centre for Process Innovation Limited, Sedgefield, County Durham (United Kingdom); Robbins, David [Centre for Process Innovation Limited, Sedgefield, County Durham (United Kingdom); Sweeney, Francis [EPSRC Centre for Innovative Manufacturing in Advanced Metrology, School of Computing and Engineering, University of Huddersfield, Huddersfield (United Kingdom)

2014-11-03

Transparent barrier films such as Al{sub 2}O{sub 3} used for prevention of oxygen and/or water vapour permeation are the subject of increasing research interest when used for the encapsulation of flexible photovoltaic modules. However, the existence of micro-scale defects in the barrier surface topography has been shown to have the potential to facilitate water vapour ingress, thereby reducing cell efficiency and causing internal electrical shorts. Previous work has shown that small defects (≤ 3 μm lateral dimension) were less significant in determining water vapour ingress. In contrast, larger defects (≥ 3 μm lateral dimension) seem to be more detrimental to the barrier functionality. Experimental results based on surface topography segmentation analysis and a model presented in this paper will be used to test the hypothesis that the major contributing defects to water vapour transmission rate are small numbers of large defects. The model highlighted in this study has the potential to be used for gaining a better understanding of photovoltaic module efficiency and performance. - Highlights: • A model of water vapour permeation through barrier defects is presented. • The effect of the defects on the water vapour permeability is investigated. • Defect density correlates with water vapour permeability. • Large defects may dominate the permeation properties of the barrier film.

Stabilization of primary mobile radiation defects in MgF{sub 2} crystals

Energy Technology Data Exchange (ETDEWEB)

Lisitsyn, V.M. [National Research Tomsk Polytechnic University, pr. Lenina 30, Tomsk 634050 (Russian Federation); Lisitsyna, L.A. [State University of Architecture and Building, pl. Solyanaya 2, Tomsk 634003 (Russian Federation); Popov, A.I., E-mail: popov@ill.fr [Institute of Solid State Physics, University of Latvia, 8 Kengaraga Str., LV-1063 Riga (Latvia); Kotomin, E.A. [Institute of Solid State Physics, University of Latvia, 8 Kengaraga Str., LV-1063 Riga (Latvia); Max Planck Institute for Solid State Research, Heisenbergstr. 1, 70569 Stuttgart (Germany); Abuova, F.U.; Akilbekov, A. [L.N. Gumilyov Eurasian National University, 3 Munaitpasova Str., Astana (Kazakhstan); Maier, J. [Max Planck Institute for Solid State Research, Heisenbergstr. 1, 70569 Stuttgart (Germany)

2016-05-01

Non-radiative decay of the electronic excitations (excitons) into point defects (F–H pairs of Frenkel defects) is main radiation damage mechanism in many ionic (halide) solids. Typical time scale of the relaxation of the electronic excitation into a primary, short-lived defect pair is about 1–50 ps with the quantum yield up to 0.2–0.8. However, only a small fraction of these primary defects are spatially separated and survive after transformation into stable, long-lived defects. The survival probability (or stable defect accumulation efficiency) can differ by orders of magnitude, dependent on the material type; e.g. ∼10% in alkali halides with f.c.c. or b.c.c. structure, 0.1% in rutile MgF{sub 2} and <0.001% in fluorides MeF{sub 2} (Me: Ca, Sr, Ba). The key factor determining accumulation of stable radiation defects is stabilization of primary defects, first of all, highly mobile hole H centers, through their transformation into more complex immobile defects. In this talk, we present the results of theoretical calculations of the migration energies of the F and H centers in poorely studied MgF{sub 2} crystals with a focus on the H center stabilization in the form of the interstitial F{sub 2} molecules which is supported by presented experimental data.

Short-Run Contexts and Imperfect Testing for Continuous Sampling Plans

Directory of Open Access Journals (Sweden)

Mirella Rodriguez

2018-04-01

Full Text Available Continuous sampling plans are used to ensure a high level of quality for items produced in long-run contexts. The basic idea of these plans is to alternate between 100% inspection and a reduced rate of inspection frequency. Any inspected item that is found to be defective is replaced with a non-defective item. Because not all items are inspected, some defective items will escape to the customer. Analytical formulas have been developed that measure both the customer perceived quality and also the level of inspection effort. The analysis of continuous sampling plans does not apply to short-run contexts, where only a finite-size batch of items is to be produced. In this paper, a simulation algorithm is designed and implemented to analyze the customer perceived quality and the level of inspection effort for short-run contexts. A parameter representing the effectiveness of the test used during inspection is introduced to the analysis, and an analytical approximation is discussed. An application of the simulation algorithm that helped answer questions for the U.S. Navy is discussed.

Mitochondrial oxidative stress contributes differently to rat pancreatic islet cell apoptosis and insulin secretory defects after prolonged culture in a low non-stimulating glucose concentration.

Science.gov (United States)

Roma, L P; Pascal, S M; Duprez, J; Jonas, J-C

2012-08-01

Pancreatic beta cells chronically exposed to low glucose concentrations show signs of oxidative stress, loss of glucose-stimulated insulin secretion (GSIS) and increased apoptosis. Our aim was to confirm the role of mitochondrial oxidative stress in rat islet cell apoptosis under these culture conditions and to evaluate whether its reduction similarly improves survival and GSIS. Apoptosis, oxidative stress-response gene mRNA expression and glucose-induced stimulation of mitochondrial metabolism, intracellular Ca(2+) concentration and insulin secretion were measured in male Wistar rat islets cultured for 1 week in RPMI medium containing 5-10 mmol/l glucose with or without manganese(III)tetrakis(4-benzoic acid)porphyrin (MnTBAP) or N-acetyl-L-: cysteine (NAC). Oxidative stress was measured in islet cell clusters cultured under similar conditions using cytosolic and mitochondrial redox-sensitive green fluorescent protein (roGFP1/mt-roGFP1). Prolonged culture in 5 vs 10 mmol/l glucose increased mt-roGFP1 (but not roGFP1) oxidation followed by beta cell apoptosis and loss of GSIS resulting from reduced insulin content, mitochondrial metabolism, Ca(2+) influx and Ca(2+)-induced secretion. Tolbutamide-induced, but not high K(+)-induced, Ca(2+) influx was also suppressed. Under these conditions, MnTBAP, but not NAC, triggered parallel ~50-70% reductions in mt-roGFP1 oxidation and beta cell apoptosis, but failed to protect against the loss of GSIS despite significant improvement in glucose-induced and tolbutamide-induced Ca(2+) influx. Mitochondrial oxidative stress contributes differently to rat pancreatic islet cell apoptosis and insulin secretory defects during culture in a low glucose concentration. Thus, targeting beta cell survival may not be sufficient to restore insulin secretion when beta cells suffer from prolonged mitochondrial oxidative stress, e.g. in the context of reduced glucose metabolism.

Short-Term Exposure to Air Pollution and Biomarkers of Oxidative Stress: The Framingham Heart Study.

Science.gov (United States)

Li, Wenyuan; Wilker, Elissa H; Dorans, Kirsten S; Rice, Mary B; Schwartz, Joel; Coull, Brent A; Koutrakis, Petros; Gold, Diane R; Keaney, John F; Lin, Honghuang; Vasan, Ramachandran S; Benjamin, Emelia J; Mittleman, Murray A

2016-04-28

Short-term exposure to elevated air pollution has been associated with higher risk of acute cardiovascular diseases, with systemic oxidative stress induced by air pollution hypothesized as an important underlying mechanism. However, few community-based studies have assessed this association. Two thousand thirty-five Framingham Offspring Cohort participants living within 50 km of the Harvard Boston Supersite who were not current smokers were included. We assessed circulating biomarkers of oxidative stress including blood myeloperoxidase at the seventh examination (1998-2001) and urinary creatinine-indexed 8-epi-prostaglandin F2α (8-epi-PGF2α) at the seventh and eighth (2005-2008) examinations. We measured fine particulate matter (PM2.5), black carbon, sulfate, nitrogen oxides, and ozone at the Supersite and calculated 1-, 2-, 3-, 5-, and 7-day moving averages of each pollutant. Measured myeloperoxidase and 8-epi-PGF2α were loge transformed. We used linear regression models and linear mixed-effects models with random intercepts for myeloperoxidase and indexed 8-epi-PGF2α, respectively. Models were adjusted for demographic variables, individual- and area-level measures of socioeconomic position, clinical and lifestyle factors, weather, and temporal trend. We found positive associations of PM2.5 and black carbon with myeloperoxidase across multiple moving averages. Additionally, 2- to 7-day moving averages of PM2.5 and sulfate were consistently positively associated with 8-epi-PGF2α. Stronger positive associations of black carbon and sulfate with myeloperoxidase were observed among participants with diabetes than in those without. Our community-based investigation supports an association of select markers of ambient air pollution with circulating biomarkers of oxidative stress. © 2016 The Authors. Published on behalf of the American Heart Association, Inc., by Wiley Blackwell.

Pressure tests to assess the significance of defects in boiler and superheater tubing

International Nuclear Information System (INIS)

Guest, J.C.; Hutchings, J.A.

1975-01-01

Internal pressure tests on 9 per cent Cr-1 per cent Mo steel tubing containing artificial defects demonstrated that the resultant loss of strength was less than a simple calculation based on the reduced tube thickness would suggest. Bursting tests on tubes containing longitudinal defects of varying length, depth and acuity showed notch strengthening at ambient temperature and at 550 0 C. A flow stress concept developed for simple bursting tests was shown to apply to creep conditions at 550 0 C. Results of creep and short-term bursting tests show that the length as well as the depth of the defect is an important factor affecting the life of bursting strength of the tubes. Defects less than 10 per cent of the tube thickness were found to have an insignificant effect. (author)

Structure, Raman spectra and defect chemistry modelling of conductive pyrochlore oxides

DEFF Research Database (Denmark)

Poulsen, F.W.; Glerup, M.; Holtappels, P.

2000-01-01

-O(x) and V-O on the O site, interstitial oxygens O-i", and delocalised electrons and electron holes. Four mass action law expressions govern such a model. The defect model can rationalise why home-valent doping, i.e. substitution of Zr(4+) by Ce(4+), can lead to an increase in ionic conductivity...

Oxidation of InP nanowires: a first principles molecular dynamics study.

Science.gov (United States)

Berwanger, Mailing; Schoenhalz, Aline L; Dos Santos, Cláudia L; Piquini, Paulo

2016-11-16

InP nanowires are candidates for optoelectronic applications, and as protective capping layers of III-V core-shell nanowires. Their surfaces are oxidized under ambient conditions which affects the nanowire physical properties. The majority of theoretical studies of InP nanowires, however, do not take into account the oxide layer at their surfaces. In this work we use first principles molecular dynamics electronic structure calculations to study the first steps in the oxidation process of a non-saturated InP nanowire surface as well as the properties of an already oxidized surface of an InP nanowire. Our calculations show that the O 2 molecules dissociate through several mechanisms, resulting in incorporation of O atoms into the surface layers. The results confirm the experimental observation that the oxidized layers become amorphous but the non-oxidized core layers remain crystalline. Oxygen related bonds at the oxidized layers introduce defective levels at the band gap region, with greater contributions from defects involving In-O and P-O bonds.

Proteomic approach to characterize biochemistry of meat quality defects.

Science.gov (United States)

Schilling, M W; Suman, S P; Zhang, X; Nair, M N; Desai, M A; Cai, K; Ciaramella, M A; Allen, P J

2017-10-01

Proteomics can be used to characterize quality defects including pale, soft, and exudative (PSE) meat (pork and poultry), woody broiler breast meat, reddish catfish fillets, meat toughness, and beef myoglobin oxidation. PSE broiler meat was characterized by 15 proteins that differed in abundance in comparison to normal broiler breast meat, and eight proteins were differentially expressed in woody breast meat in comparison to normal breast meat. Hemoglobin was the only protein that was differentially expressed between red and normal catfish fillets. However, inducing low oxygen and/or heat stress conditions to catfish fillets did not lead to the production of red fillets. Proteomic data provided information pertaining to the protein differences that exist in meat quality defects. However, these data need to be evaluated in conjunction with information pertaining to genetics, nutrition, environment of the live animal, muscle to meat conversion, meat quality analyses and sensory attributes to understand causality, protein biomarkers, and ultimately how to prevent quality defects. Copyright © 2017 Elsevier Ltd. All rights reserved.

Fiber optic hydrogen gas sensor utilizing surface plasmon resonance and native defects of zinc oxide by palladium

International Nuclear Information System (INIS)

Tabassum, Rana; Gupta, Banshi D

2016-01-01

We present an experimental study on a surface plasmon resonance (SPR) based fiber optic hydrogen gas sensor employing a palladium doped zinc oxide nanocomposite (ZnO (1−x) Pd x , 0 ≤ x ≤ 0.85) layer over the silver coated unclad core of the fiber. Palladium doped zinc oxide nanocomposites (ZnO (1−x) Pd x )  are prepared by a chemical route for different composition ratios and their structural, morphological and hydrogen sensing properties are investigated experimentally. The sensing principle involves the absorption of hydrogen gas by ZnO (1−x) Pd x , altering its dielectric function. The change in the dielectric constant is analyzed in terms of the red shift of the resonance wavelength in the visible region of the electromagnetic spectrum. To check the sensing capability of sensing probes fabricated with varying composition ratio (x) of nanocomposite, the SPR curves are recorded typically for 0% H 2 and 4% H 2 in N 2 atmosphere for each fabricated probe. On changing the concentration of hydrogen gas from 0% to 4%, the red shift in the SPR spectrum confirms the change in dielectric constant of ZnO (1−x) Pd x on exposure to hydrogen gas. It is noted that the shift in the SPR spectrum increases monotonically up to a certain fraction of Pd in zinc oxide, beyond which it starts decreasing. SEM images and the photoluminescence (PL) spectra reveal that Pd dopant atoms substitutionally incorporated into the ZnO lattice profoundly affect its defect levels; this is responsible for the optimal composition of ZnO (1−x) Pd x to sense the hydrogen gas. The sensor is highly selective to hydrogen gas and possesses high sensitivity. Since optical fiber sensing technology is employed along with the SPR technique, the present sensor is capable of remote sensing and online monitoring of hydrogen gas. (paper)

Birth Defects

Science.gov (United States)

A birth defect is a problem that happens while a baby is developing in the mother's body. Most birth defects happen during the first 3 months of ... in the United States is born with a birth defect. A birth defect may affect how the ...

Ionizing radiation-induced metabolic oxidative stress and prolonged cell injury

Science.gov (United States)

Azzam, Edouard I.; Jay-Gerin, Jean-Paul; Pain, Debkumar

2013-01-01

Cellular exposure to ionizing radiation leads to oxidizing events that alter atomic structure through direct interactions of radiation with target macromolecules or via products of water radiolysis. Further, the oxidative damage may spread from the targeted to neighboring, non-targeted bystander cells through redox-modulated intercellular communication mechanisms. To cope with the induced stress and the changes in the redox environment, organisms elicit transient responses at the molecular, cellular and tissue levels to counteract toxic effects of radiation. Metabolic pathways are induced during and shortly after the exposure. Depending on radiation dose, dose-rate and quality, these protective mechanisms may or may not be sufficient to cope with the stress. When the harmful effects exceed those of homeostatic biochemical processes, induced biological changes persist and may be propagated to progeny cells. Physiological levels of reactive oxygen and nitrogen species play critical roles in many cellular functions. In irradiated cells, levels of these reactive species may be increased due to perturbations in oxidative metabolism and chronic inflammatory responses, thereby contributing to the long-term effects of exposure to ionizing radiation on genomic stability. Here, in addition to immediate biological effects of water radiolysis on DNA damage, we also discuss the role of mitochondria in the delayed outcomes of ionization radiation. Defects in mitochondrial functions lead to accelerated aging and numerous pathological conditions. Different types of radiation vary in their linear energy transfer (LET) properties, and we discuss their effects on various aspects of mitochondrial physiology. These include short and long-term in vitro and in vivo effects on mitochondrial DNA, mitochondrial protein import and metabolic and antioxidant enzymes. PMID:22182453

Temporal patterning of the potential induced by localized corrosion of iron passivity in acid media. Growth and breakdown of the oxide film described in terms of a point defect model.

Science.gov (United States)

Sazou, Dimitra; Pavlidou, Maria; Pagitsas, Michael

2009-10-21

This work analyses the nature of temporal patterning of the anodic potential induced by chlorides during polarization of iron under current-controlled conditions in acid solutions. It is shown that potential oscillations emerged as a result of the local chloride attack of a thin oxide layer, which covers the iron surface in its passive state. The mechanism by which both the local oxide breakdown and the subsequent localized active dissolution (pitting) occur is explained by considering a point defect model (PDM) developed to describe the oxide growth and breakdown. According to the PDM, chlorides occupy oxygen vacancies resulting in the inhibition of oxide growth and autocatalytic generation of cation vacancies that destabilize the oxide layer. Simultaneous transformation of the outer surface of the inner oxide layer to non-adherent ferrous chloride or oxo-chloride species leads to a further thinning of the oxide layer and its lifting-on from the iron surface. The process repeats again yielding sustained oscillations of the anodic potential. Analysis of the oscillatory response obtained under current-controlled conditions as a function of either the current or the time allows the suggestion of a set of alternate diagnostic criteria, which might be used to characterize localized corrosion of iron in acid solutions.

Point defects and diffusion in alloys: correlation effects

International Nuclear Information System (INIS)

Barbe, Vincent

2006-01-01

Kinetic models in alloys aim at predicting the transport properties of a system starting from the microscopic jump frequencies of defects. Such properties are of prior importance in systems which stay out of equilibrium for a long time, as for example irradiated alloys in nuclear reactors. We hereby propose several developments of the recent self-consistent mean field (SCMF) kinetic theory, which deals particularly with the correlation effects due to the coupling of atomic and defect fluxes. They are taken into account through a non-equilibrium distribution function of the system, which is derived from the time evolution of small clusters (of two or more atoms or defects). We therefore introduce a set of 'dynamic' interactions called effective Hamiltonian. The SCMF theory is extended to treat high jump frequency ratios for the vacancy mechanism, as well as the transport through interstitial defects. We use in both cases an atomic model which accounts for the thermodynamic properties of the alloy, as e.g. the short-range order. Those models are eventually applied to predict the diffusion properties in two model alloys of nuclear interest: the concentrated Fe-Ni-Cr solid solution and the dilute Fe(P) alloy. We present adapted atomic models and compare our predictions to experimental data. (author)

Influence of surface defects in ZnO thin films on its biosensing response characteristic

Energy Technology Data Exchange (ETDEWEB)

Saha, Shibu; Gupta, Vinay [Department of Physics and Astrophysics, University of Delhi, Delhi-110007 (India)

2011-09-15

Highly c-axis oriented zinc oxide (ZnO) thin films deposited by rf magnetron sputtering under varying processing pressure (20-50 mT) in a reactive gas mixture of argon and oxygen were studied for biosensing application. The as-deposited ZnO thin films were in a state of compressive stress having defects related to interstitial Zn and antisite oxygen. Glucose oxidase has been chosen as the model enzyme in the present study and was immobilized on the surface of ZnO thin films deposited on indium tin oxide coated Corning Glass substrate. The studies reveal a correlation between the biosensing characteristic and the presence of defects in the ZnO films. The ZnO films deposited under high pressure (50 mT) are found to be more sensitive for biosensing application due to availability of more surface area for effective immobilization of biomolecules and exhibits a suitable microenvironment with good electron transfer characteristic. The obtained results highlight the importance of desired microstate besides availability of suitable native defects in the ZnO thin film for exhibiting enhanced biosensing response.

Influence of surface defects in ZnO thin films on its biosensing response characteristic

International Nuclear Information System (INIS)

Saha, Shibu; Gupta, Vinay

2011-01-01

Highly c-axis oriented zinc oxide (ZnO) thin films deposited by rf magnetron sputtering under varying processing pressure (20-50 mT) in a reactive gas mixture of argon and oxygen were studied for biosensing application. The as-deposited ZnO thin films were in a state of compressive stress having defects related to interstitial Zn and antisite oxygen. Glucose oxidase has been chosen as the model enzyme in the present study and was immobilized on the surface of ZnO thin films deposited on indium tin oxide coated Corning Glass substrate. The studies reveal a correlation between the biosensing characteristic and the presence of defects in the ZnO films. The ZnO films deposited under high pressure (50 mT) are found to be more sensitive for biosensing application due to availability of more surface area for effective immobilization of biomolecules and exhibits a suitable microenvironment with good electron transfer characteristic. The obtained results highlight the importance of desired microstate besides availability of suitable native defects in the ZnO thin film for exhibiting enhanced biosensing response.

Genome-enabled studies of anaerobic, nitrate-dependent iron oxidation in the chemolithoautotrophic bacterium Thiobacillus denitrificans

Directory of Open Access Journals (Sweden)

Harry R Beller

2013-08-01

Full Text Available Thiobacillus denitrificans is a chemolithoautotrophic bacterium capable of anaerobic, nitrate-dependent U(IV and Fe(II oxidation, both of which can strongly influence the long-term efficacy of in situ reductive immobilization of uranium in contaminated aquifers. We previously identified two c-type cytochromes involved in nitrate-dependent U(IV oxidation in T. denitrificans and hypothesized that c-type cytochromes would also catalyze Fe(II oxidation, as they have been found to play this role in anaerobic phototrophic Fe(II-oxidizing bacteria. Here we report on efforts to identify genes associated with nitrate-dependent Fe(II oxidation, namely (a whole-genome transcriptional studies [using FeCO3, Fe2+, and U(IV oxides as electron donors under denitrifying conditions], (b Fe(II oxidation assays performed with knockout mutants targeting primarily highly expressed or upregulated c-type cytochromes, and (c random transposon-mutagenesis studies with screening for Fe(II oxidation. Assays of mutants for 26 target genes, most of which were c-type cytochromes, indicated that none of the mutants tested were significantly defective in nitrate-dependent Fe(II oxidation. The non-defective mutants included the c1-cytochrome subunit of the cytochrome bc1 complex (complex III, which has relevance to a previously proposed role for this complex in nitrate-dependent Fe(II oxidation and to current concepts of reverse electron transfer. A transposon mutant with a disrupted gene associated with NADH:ubiquinone oxidoreductase (complex I was ~35% defective relative to the wild-type strain; this strain was similarly defective in nitrate reduction with thiosulfate as the electron donor. Overall, our results indicate that nitrate-dependent Fe(II oxidation in T. denitrificans is not catalyzed by the same c-type cytochromes involved in U(IV oxidation, nor have other c-type cytochromes yet been implicated in the process.

A Brazing Defect Detection Using an Ultrasonic Infrared Imaging Inspection

Energy Technology Data Exchange (ETDEWEB)

Cho, Jai Wan; Choi, Young Soo; Jung, Seung Ho; Jung, Hyun Kyu [Korea Atomic Energy Research Institute, Daejeon (Korea, Republic of)

2007-10-15

When a high-energy ultrasound propagates through a solid body that contains a crack or a delamination, the two faces of the defect do not ordinarily vibrate in unison, and dissipative phenomena such as friction, rubbing and clapping between the faces will convert some of the vibrational energy to heat. By combining this heating effect with infrared imaging, one can detect a subsurface defect in material in real time. In this paper a realtime detection of the brazing defect of thin Inconel plates using the UIR (ultrasonic infrared imaging) technology is described. A low frequency (23 kHz) ultrasonic transducer was used to infuse the welded Inconel plates with a short pulse of sound for 280 ms. The ultrasonic source has a maximum power of 2 kW. The surface temperature of the area under inspection is imaged by an infrared camera that is coupled to a fast frame grabber in a computer. The hot spots, which are a small area around the bound between the two faces of the Inconel plates near the defective brazing point and heated up highly, are observed. And the weak thermal signal is observed at the defect position of brazed plate also. Using the image processing technology such as background subtraction average and image enhancement using histogram equalization, the position of defective brazing regions in the thin Inconel plates can be located certainly

Uncemented three-dimensional-printed prosthetic reconstruction for massive bone defects of the proximal tibia.

Science.gov (United States)

Lu, Minxun; Li, Yongjiang; Luo, Yi; Zhang, Wenli; Zhou, Yong; Tu, Chongqi

2018-03-06

Currently, it is challenging to treat massive bone defects of proximal tibia. Although numerous methods are available for reconstruction with epiphysis preservation, limitations in knee function and complications are noted with these methods. Our paper describes our attempt to reconstruct a marked defect in the proximal tibia with an uncemented three-dimensional (3D)-printed prosthesis and to evaluate the prosthesis design and short-term outcomes. A 15-year-old boy with metaphyseal osteosarcoma of the tibia underwent intercalary allograft reconstruction following wide tumour resection with epiphysis preservation. However, chronic allograft rejection and/or infection occurred after the surgery and a sinus tract was formed. The rejection and/or infection process was successfully stopped by the removal of the graft and implantation of an antibiotic-loaded cement spacer; however, the limb function was poor. Because of the irregular shape of the defect and the excessively short length of the residual proximal tibia, we used the 3D printing technology to design and fabricate a personalised prosthesis to reconstruct the defect, with the preservation of the knee joint. At the last follow-up at 26 months, the patient had satisfactory limb function. The 3D-printed prosthesis may be a feasible option in the reconstruction of tibial metaphyseal defects with the preservation of the knee joint. Moreover, it can result in good postoperative function and low complication rates. However, a long-term follow-up is required to clarify its long-term outcomes.

Reconstruction of palatal defect using mucoperiosteal hinge flap and pushback palatoplasty.

Science.gov (United States)

Lee, S I; Lee, H S; Hwang, K

2001-11-01

This article describes a simple, new surgical technique to provide a complete two-layer closure of palatal defect resulting from a surgical complication of trans palatal resection of skull base chordoma. The nasal layer was reconstructed with triangular shape oral mucoperiosteal turn over hinge flap based on anterior margin of palatal defect and rectangular shaped lateral nasal mucosal hinge flaps. The oral layer was reconstructed with conventional pushback V-Y advancement 2-flaps palatoplasty. Each layer of the flaps were secured with two key mattress suture for flap coaptation. This technique has some advantages: simple, short operation time, one-stage procedure, no need of osteotomy. It can close small- to medium-sized palatal defect of palate or wide cleft palate and can prevent common complication of oronasal fistula, which could be caused by tension.

Evaluation of Bending Strength of Carburized Gears Based on Inferential Identification of Principal Surface Layer Defects

Science.gov (United States)

Masuyama, Tomoya; Inoue, Katsumi; Yamanaka, Masashi; Kitamura, Kenichi; Saito, Tomoyuki

High load capacity of carburized gears originates mainly from the hardened layer and induced residual stress. On the other hand, surface decarburization, which causes a nonmartensitic layer, and inclusions such as oxides and segregation act as latent defects which considerably reduce fatigue strength. In this connection, the authors have proposed a formula of strength evaluation by separately quantifying defect influence. However, the principal defect which limits strength of gears with several different defects remains unclarified. This study presents a method of inferential identification of principal defects based on test results of carburized gears made of SCM420 clean steel, gears with both an artificial notch and nonmartensitic layer at the tooth fillet, and so forth. It clarifies practical uses of presented methods, and strength of carburized gears can be evaluated by focusing on principal defect size.

High glucose-induced oxidative stress represses sirtuin deacetylase expression and increases histone acetylation leading to neural tube defects.

Science.gov (United States)

Yu, Jingwen; Wu, Yanqing; Yang, Peixin

2016-05-01

Aberrant epigenetic modifications are implicated in maternal diabetes-induced neural tube defects (NTDs). Because cellular stress plays a causal role in diabetic embryopathy, we investigated the possible role of the stress-resistant sirtuin (SIRT) family histone deacetylases. Among the seven sirtuins (SIRT1-7), pre-gestational maternal diabetes in vivo or high glucose in vitro significantly reduced the expression of SIRT 2 and SIRT6 in the embryo or neural stem cells, respectively. The down-regulation of SIRT2 and SIRT6 was reversed by superoxide dismutase 1 (SOD1) over-expression in the in vivo mouse model of diabetic embryopathy and the SOD mimetic, tempol and cell permeable SOD, PEGSOD in neural stem cell cultures. 2,3-dimethoxy-1,4-naphthoquinone (DMNQ), a superoxide generating agent, mimicked high glucose-suppressed SIRT2 and SIRT6 expression. The acetylation of histone 3 at lysine residues 56 (H3K56), H3K14, H3K9, and H3K27, putative substrates of SIRT2 and SIRT6, was increased by maternal diabetes in vivo or high glucose in vitro, and these increases were blocked by SOD1 over-expression or tempol treatment. SIRT2 or SIRT6 over-expression abrogated high glucose-suppressed SIRT2 or SIRT6 expression, and prevented the increase in acetylation of their histone substrates. The potent sirtuin activator (SRT1720) blocked high glucose-increased histone acetylation and NTD formation, whereas the combination of a pharmacological SIRT2 inhibitor and a pan SIRT inhibitor mimicked the effect of high glucose on increased histone acetylation and NTD induction. Thus, diabetes in vivo or high glucose in vitro suppresses SIRT2 and SIRT6 expression through oxidative stress, and sirtuin down-regulation-induced histone acetylation may be involved in diabetes-induced NTDs. The mechanism underlying pre-gestational diabetes-induced neural tube defects (NTDs) is still elusive. Our study unravels a new epigenetic mechanism in which maternal diabetes-induced oxidative stress represses

Defect engineering of mesoporous nickel ferrite and its application for highly enhanced water oxidation catalysis

Energy Technology Data Exchange (ETDEWEB)

Yue, Qiudi; Liu, Cunming; Wan, Yangyang; Wu, Xiaojun; Zhang, Xiaoyi; Du, Pingwu

2018-02-01

Spinel nickel ferrite (NiFe2O4) emerges as a promising low-cost catalyst for water splitting but it usually shows low catalytic activity because of its limited number of active sites and poor conductivity. For the first time, herein we have successfully overcome its weaknesses using defect engineering approach by creating oxygen vacancies in NiFe2O4. The existence of oxygen vacancy not only shifts up the d-band center, strengthens the adsorption of H2O, and thus provides more active catalytic sites, but also tunes the electron configuration and creates massive number of defective donor states in the band gap to facilitate charge transfer processes. The optimal defective catalyst showed significantly enhanced catalytic OER performance with an OER overpotential as low as 0.35 V at 10 mA cm-2 and a Tafel slope of only ~40 mV dec-1. Moreover, the impressive specific mass and area current density of 17.5 A g-1 and 0.106 A m-2 at 1.58 V vs. RHE have been achieved, which are ~23 and ~36 times higher than that of defect-free counterpart, respectively.

Tuning thermal conductivity in homoepitaxial SrTiO{sub 3} films via defects

Energy Technology Data Exchange (ETDEWEB)

Brooks, Charles M. [Department of Materials Science and Engineering, Cornell University, Ithaca, New York 14853-1501 (United States); Department of Materials Science and Engineering, Pennsylvania State University, University Park, Pennsylvania 16802 (United States); Wilson, Richard B.; Cahill, David G. [Department of Materials Science and Engineering and Materials Research Laboratory, University of Illinois, Urbana, Illinois 61801 (United States); Schäfer, Anna; Schubert, Jürgen [Peter Grünberg Institute (PGI9-IT), JARA-Fundamentals of Future Information Technology, Research Centre Jülich, D-52425 Jülich (Germany); Mundy, Julia A.; Holtz, Megan E. [School of Applied and Engineering Physics, Cornell University, Ithaca, New York 14853 (United States); Muller, David A. [School of Applied and Engineering Physics, Cornell University, Ithaca, New York 14853 (United States); Kavli Institute at Cornell for Nanoscale Science, Ithaca, New York 14853 (United States); Schlom, Darrell G. [Department of Materials Science and Engineering, Cornell University, Ithaca, New York 14853-1501 (United States); Kavli Institute at Cornell for Nanoscale Science, Ithaca, New York 14853 (United States)

2015-08-03

We demonstrate the ability to tune the thermal conductivity of homoepitaxial SrTiO{sub 3} films deposited by reactive molecular-beam epitaxy by varying growth temperature, oxidation environment, and cation stoichiometry. Both point defects and planar defects decrease the longitudinal thermal conductivity (k{sub 33}), with the greatest decrease in films of the same composition observed for films containing planar defects oriented perpendicular to the direction of heat flow. The longitudinal thermal conductivity can be modified by as much as 80%—from 11.5 W m{sup −1}K{sup −1} for stoichiometric homoepitaxial SrTiO{sub 3} to 2 W m{sup −1}K{sup −1} for strontium-rich homoepitaxial Sr{sub 1+δ}TiO{sub x} films—by incorporating (SrO){sub 2} Ruddlesden-Popper planar defects.

Defects in ZnO nanorods prepared by a hydrothermal method.

Science.gov (United States)

Tam, K H; Cheung, C K; Leung, Y H; Djurisić, A B; Ling, C C; Beling, C D; Fung, S; Kwok, W M; Chan, W K; Phillips, D L; Ding, L; Ge, W K

2006-10-26

ZnO nanorod arrays were fabricated using a hydrothermal method. The nanorods were studied by scanning electron microscopy, photoluminescence (PL), time-resolved PL, X-ray photoelectron spectroscopy, and positron annihilation spectroscopy before and after annealing in different environments and at different temperatures. Annealing atmosphere and temperature had significant effects on the PL spectrum, while in all cases the positron diffusion length and PL decay times were increased. We found that, while the defect emission can be significantly reduced by annealing at 200 degrees C, the rods still have large defect concentrations as confirmed by their low positron diffusion length and short PL decay time constants.

Synthesis of Graphite Oxide with Different Surface Oxygen Contents Assisted Microwave Radiation

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Adriana Ibarra-Hernández

2018-02-01

Full Text Available Graphite oxide is synthesized via oxidation reaction using oxidant compounds that have lattice defects by the incorporation of unlike functional groups. Herein, we report the synthesis of the graphite oxide with diverse surface oxygen content through three (B, C, D different modified versions of the Hummers method assisted microwave radiation compared with the conventional graphite oxide sample obtained by Hummers method (A. These methods allow not only the production of graphite oxide but also reduced graphene oxide, without undergoing chemical, thermal, or mechanical reduction steps. The values obtained of C/O ratio were ~2, 3.4, and ~8.5 for methodologies C, B, and D, respectively, indicating the presence of graphite oxide and reduced graphene oxide, according to X-ray photoelectron spectroscopy. Raman spectroscopy of method D shows the fewest structural defects compared to the other methodologies. The results obtained suggest that the permanganate ion produces reducing species during graphite oxidation. The generation of these species is attributed to a reversible reaction between the permanganate ion with π electrons, ions, and radicals produced after treatment with microwave radiation.

Defect-tolerance analysis of fundamental quantum-dot cellular automata devices

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Yongqiang Zhang

2015-04-01

Full Text Available Quantum-dot cellular automata (QCA is a burgeoning technology at the nano-scale range, with the potential for lower power consumption, smaller size and faster speed than conventional complementary metal–oxide semiconductor-based technology. Because of its ultra-density integration and its inherent physical properties, fault-tolerance is an important property to consider in the research and manufacture of QCA. In this paper, one type of defect, in which displacement and misalignment occur coinstantaneously, is investigated in detail on rudimentary QCA devices (majority voter (MV, inverter, wire with QCADesigner. Another MV with rotated cells is also proposed, and it is more robust than the original one. Simulation results present the defect-tolerance of these devices, that is, the maximum precise region the defective cell can be moved moreover, with correct logical function. These conclusions have a meaningful guiding significance for QCA physical implementation and fault-tolerance research.

Defects characterization of arsenic implanted silicon by AC Hall effect measurements

International Nuclear Information System (INIS)

Jaouen, H.; Ghibaudo, G.; Christofides, C.

1986-01-01

AC and DC Hall effects measurements as a function of temperature (77 - 300K) and frequency (1Hz - 100KHz) have been performed to characterize implanted Silicon films. This technique enables the determination of the annihilation processes of defects in such layers as a function of temperature of isochronal annealings (300/sup 0/C to 1100/sup 0/C during 1 hour). The experimental results are discussed with respect to proper transport models based on short and long range disorder considerations in order to find out the features of defects and inhomogeneities arising from implantation and their thermal annihilation after isochronal annealing

Characterization of defects and microstructures by neutrons and synchrotron radiations topography

International Nuclear Information System (INIS)

Baruchel, J.

1993-01-01

Neutrons and synchrotron radiation topography are complementary for defects study, for domains or phases coexistence in magnetic or high absorbing crystals, or crystals not supporting intense X irradiation. Applications to CuGe, NiAl, CuAl, FeSi binary alloys are shortly presented. (A.B.). 8 refs, 1 fig

Severe Short Stature in an Adolescent Male with Prader-Willi Syndrome and Congenital Adrenal Hyperplasia: A Therapeutic Conundrum

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Meredith Wasserman

2017-01-01

Full Text Available Congenital adrenal hyperplasia (CAH due to 21-hydroxylase deficiency results in excess androgen production which can lead to early epiphyseal fusion and short stature. Prader-Willi syndrome (PWS is a genetic disorder resulting from a defect on chromosome 15 due to paternal deletion, maternal uniparental disomy, or imprinting defect. Ninety percent of patients with PWS have short stature. In this article we report a patient with simple-virilizing CAH and PWS who was overtreated with glucocorticoids for CAH and not supplemented with growth hormone for PWS, resulting in a significantly short adult height.

Observation of defects evolution in electronic materials

Science.gov (United States)

Jang, Jung Hun

annealing, ion-implantation, and thermal oxidation. Advanced characterization techniques have been used to obtain information about strain, relaxation, layer thickness, elemental composition, defects, surface/interface morphology changes and so on. Based on the understanding of defects behavior during the strain relaxation after post thermal processes, a new manufacturing process to obtain highly-relaxed and thin Si1-xGex layers, which could be used as virtual substrates for strained-Si applications, was found.

Oxide, interface, and border traps in thermal, N2O, and N2O-nitrided oxides

International Nuclear Information System (INIS)

Fleetwood, D.M.; Saks, N.S.

1996-01-01

We have combined thermally stimulated-current (TSC) and capacitance endash voltage (C endash V) measurements to estimate oxide, interface, and effective border trap densities in 6 endash 23 nm thermal, N 2 O, and N 2 O-nitrided oxides exposed to ionizing radiation or high-field electron injection. Defect densities depend strongly on oxide processing, but radiation exposure and moderate high-field stress lead to similar trapped hole peak thermal energy distributions (between ∼1.7 and ∼2.0 eV) for all processes. This suggests that similar defects dominate the oxide charge trapping properties in these devices. Radiation-induced hole and interface trap generation efficiencies (0.1%endash 1%) in the best N 2 O and N 2 O-nitrided oxides are comparable to the best radiation hardened oxides in the literature. After ∼10 Mrad(SiO 2 ) x-ray irradiation or ∼10 mC/cm 2 constant current Fowler endash Nordheim injection, effective border trap densities as high as ∼5x10 11 cm -2 are inferred from C endash V hysteresis. These measurements suggest irradiation and high-field stress cause similar border trap energy distributions. In each case, even higher densities of compensating trapped electrons in the oxides (up to 2x10 12 cm -2 ) are inferred from combined TSC and C endash V measurements. These trapped electrons prevent conventional C endash V methods from providing accurate estimates of the total oxide trap charge density in many irradiation or high-field stress studies. Fewer compensating electrons per trapped hole (∼26%±5%) are found for irradiation of N 2 O and N 2 O-nitrided oxides than for thermal oxides (∼46%±7%). (Abstract Truncated)

Effect of heating and deformation conditions on the depth of surface defects in alloyed steel rolling

International Nuclear Information System (INIS)

Malygin, R.Z.; Karyakin, B.P.; Grosman, A.B.; Simovskikh, V.N.; Storozhev, V.I.

1978-01-01

The effect of heating and deformation conditions on the depth change of artificial defects in the 50 KhFA alloyed steel rolling on the 850 blooming and 450 section mill was studied. Quite a definite regularity in the arrangement of defects (cracks and hairlines) along the circumference of the round steel bar and obvious relation with the defect distribution on the bloom faces are established. Oxidation is shown to diminish defect depth while ingot and billet heating especially on the faces under direct firing. Blooms should be placed in the furnace with 90 deg canting in relation to the faces position while ingot heating. Round rolling must be performed with one or several 45 deg strip cantings. The defect depth for the ingots to be rolled without chipping is set up

Energetics of intrinsic point defects in uranium dioxide from electronic-structure calculations

International Nuclear Information System (INIS)

Nerikar, Pankaj; Watanabe, Taku; Tulenko, James S.; Phillpot, Simon R.; Sinnott, Susan B.

2009-01-01

The stability range of intrinsic point defects in uranium dioxide is determined as a function of temperature, oxygen partial pressure, and non-stoichiometry. The computational approach integrates high accuracy ab initio electronic-structure calculations and thermodynamic analysis supported by experimental data. In particular, the density functional theory calculations are performed at the level of the spin polarized, generalized gradient approximation and includes the Hubbard U term; as a result they predict the correct anti-ferromagnetic insulating ground state of uranium oxide. The thermodynamic calculations enable the effects of system temperature and partial pressure of oxygen on defect formation energy to be determined. The predicted equilibrium properties and defect formation energies for neutral defect complexes match trends in the experimental literature quite well. In contrast, the predicted values for charged complexes are lower than the measured values. The calculations predict that the formation of oxygen interstitials becomes increasingly difficult as higher temperatures and reducing conditions are approached

The electrical properties of indium oxide thin films. In-situ Hall effect measurements to investigate the influence of point defects and grain boundaries; Die elektrischen Eigenschaften von Indiumoxid-Duennschichten. In-situ Hall-Effekt-Messungen zur Aufklaerung des Einflusses von Punktdefekten und Korngrenzen

Energy Technology Data Exchange (ETDEWEB)

Frischbier, Mareike

2015-08-15

Despite the wide application of indium oxide as transparent conducting material, basic mechanisms of its high conductivity are not understood yet. However, indium is scarce and the development of alternative materials for indium oxide is necessary. This requires a detailed understanding of the conductivity mechanisms. The electrical conductivity of undoped and doped indium oxide is given by defects. Thus, the influence of point defects and grain boundaries in sputtered indium oxide thin films is investigated here. This dissertation contributes to a more profound understanding of the conductivity mechanisms of indium oxide: grain boundary scattering is identified as the most important limiting scattering mechanism and the influence of doping elements on this property is shown. Dominant point defects in oxide materials are commonly investigated in literature by conductivity relaxation measurements depending on oxygen partial pressure. Usually, carrier mobility is assumed to be constant when analysing the results. However, this assumption is incorrect and can lead to a misinterpretation of data. Therefore, relaxation measurements are conducted as part of this dissertation to directly measure charge carrier concentration and mobility for the first time. For this purpose, a new experimental setup has been developed which enables measuring the Hall effect in-situ depending on oxygen partial pressure, temperature and total pressure. Relaxation measurements are conducted as part of this dissertation to show that charge carrier mobility is not constant, but strongly depends on carrier concentration. Further measurements verify that the scattering of charge carriers at grain boundaries is one main reason. In addition, the influence of deposition parameters of the sputter deposition process and doping (dopant element and concentration) on carrier concentration and mobility at room temperature is studied. The experimental results show that the doping elements influence both

Isolated Asymptomatic Short Sternum in a Healthy Young Girl

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Francesco Turturro

2014-01-01

Full Text Available Congenital sternal defects are rare deformities frequently associated with other anomalies of the chest wall and other organ systems. Although pectus excavatum, pectus carinatum, and cleft sternum can present as isolated deformity, in most cases they are associated with heart and inner organs anomalies and described as symptoms of syndromes like Marfan syndrome, Noonan syndrome, Poland anomaly, and Cantrell pentalogy. In contrast, the etiology of an isolated defect is not well understood. We observed a short sternum (dysmorphic manubrium, hypoplastic body, and complete absence of the xiphoid process in a completely asymptomatic 13-year-old woman. A comprehensive instrumental exams panel was performed to exclude associated anomalies of the heart and of the other organ systems. The patient was completely asymptomatic and she did not need any medical or surgical treatment. To our knowledge, this is the first case of isolated short sternum reported in literature.

Transmission electron microscopy and Raman characterization of copper (I) oxide microspheres composed of nanoparticles

International Nuclear Information System (INIS)

Wang Wenzhong; Tu Ya; Wang Lijuan; Liang Yujie; Shi Honglong

2013-01-01

Highlights: ► Raman spectroscopy of copper (I) oxide microspheres were investigated. ► Infrared active mode is greatly activated in Raman scattering spectrum. ► Infrared active mode shows up in Raman spectrum of copper (I) oxide microspheres. ► The defects existed in spheres could be responsible for the observed Raman property. - Abstract: The high-resolution transmission electron microscope and Raman spectroscopy were used to investigate the microstructures and Raman scattering property of copper (I) oxide microspheres composed of nanoparticles. High-resolution transmission electron microscope images indicate that the copper (I) oxide microspheres are composed of nanoparticles with random growth direction, indicating that there are many defects in microspheres. The Raman spectrum shows that infrared active mode, which must be odd parity and is Raman forbidden for bulk crystal due to its inversion symmetry, is activated and shows up in Raman scattering spectrum. On the basis of investigations of the microstructure features of copper (I) oxide microspheres, we attribute the appearance of IR active mode in Raman scattering spectrum to the breakdown of the symmetry of the lattice due to the presence of defects in the prepared copper (I) oxide microspheres as observed in HRTEM images.

DFM for maskmaking: design-aware flexible mask-defect analysis

Science.gov (United States)

Driessen, Frank A. J. M.; Westra, J.; Scheffer, M.; Kawakami, K.; Tsujimoto, E.; Yamaji, M.; Kawashima, T.; Hayashi, N.

2007-10-01

We present a novel software system that combines design intent as known by EDA designers with defect inspection results from the maskshop to analyze the severity of defects on photomasks. The software -named Takumi Design- Driven Defect Analyzer (TK-D3A)- analyzes defects by combining actions in the image domain with actions in the design domain and outputs amongst others flexible mask-repair decisions in production formats used by the maskshop. Furthermore, TK-D3A outputs clips of layout (GDS/OASIS) that can be viewed with its graphical user interface for easy review of the defects and associated repair decisions. As inputs the system uses reticle defect-inspection data (text and images) and the respective multi-layer design layouts with the definitions of criticalities. The system does not require confidential design data from IDM, Fabless Design House, or Foundry to be sent to the maskshop and it also has minimal impact on the maskshop's mode of operation. The output of TK-D3A is designed to realize value to the maskshop and its customers in the forms of: 1) improved yield, 2) reduction of delivery times of masks to customers, and 3) enhanced utilization of the maskshop's installed tool base. The system was qualified together with a major IDM on a large set of production reticles in the 90 and beyond-65 nm technology nodes of which results will be presented that show the benefits for maskmaking. The accuracy in detecting defects is extremely high. We show the system's capability to analyze defects well below the pixel resolution of all inspection tools used, as well as the capability to extract multiple types of transmission defects. All of these defects are analyzed design-criticality-aware by TK-D3A, resulting in a large fraction of defects that do not need to be repaired because they are located in non-critical or less-critical parts of the layout, or, more importantly, turn out to be repairable or negligible despite of originally being classified as

Defects in quasi-one dimensional oxide conductors: K0.3MoO3

International Nuclear Information System (INIS)

Smith, K.E.; Breuer, K.; Goldberg, D.; Greenblatt, M.; McCarroll, W.; Hulbert, S.L.

1995-01-01

The electronic structure of the prototypical quasi-one dimensional (ID) conductor K 0.3 MoO 3 has been studied using high resolution photoemission spectroscopy. In particular, the electronic structure of defects was investigated in order to understand the mechanism for charge density wave pinning and destruction of the Peierls transition. Defects were found to radically alter the electronic structure close to the Fermi level (E F ), thus strongly modifying the structure of the Fermi surface. While a low emission intensity at E F has been interpreted as evidence for a Luttinger liquid ground state in a 1D metal, the authors show that non-stoichiometric surfaces lead to similar effects. The nature of the ground state is discussed in the context of these results

Reliability implications of defects in high temperature annealed Si/SiO2/Si structures

International Nuclear Information System (INIS)

Warren, W.L.; Fleetwood, D.M.; Shaneyfelt, M.R.; Winokur, P.S.; Devine, R.A.B.; Mathiot, D.; Wilson, I.H.; Xu, J.B.

1994-01-01

High-temperature post-oxidation annealing of poly-Si/SiO 2 /Si structures such as metal-oxide-semiconductor capacitors and metal-oxide-semiconductor field effect transistors is known to result in enhanced radiation sensitivity, increased 1/f noise, and low field breakdown. The authors have studied the origins of these effects from a spectroscopic standpoint using electron paramagnetic resonance (EPR) and atomic force microscopy. One result of high temperature annealing is the generation of three types of paramagnetic defect centers, two of which are associated with the oxide close to the Si/SiO 2 interface (oxygen-vacancy centers) and the third with the bulk Si substrate (oxygen-related donors). In all three cases, the origin of the defects may be attributed to out-diffusion of O from the SiO 2 network into the Si substrate with associated reduction of the oxide. The authors present a straightforward model for the interfacial region which assumes the driving force for O out-diffusion is the chemical potential difference of the O in the two phases (SiO 2 and the Si substrate). Experimental evidence is provided to show that enhanced hole trapping and interface-trap and border-trap generation in irradiated high-temperature annealed Si/SiO 2 /Si systems are all related either directly, or indirectly, to the presence of oxygen vacancies

Positron annihilation spectroscopic characterization of defects in wide band gap oxide semiconductors

Science.gov (United States)

Sarkar, A.; Luitel, Homnath; Gogurla, N.; Sanyal, D.

2017-03-01

Annealing effect of granular ZnO has been studied by Doppler broadened electron positron annihilated γ-ray (0.511 MeV) line shape measurement. Ratio curve analysis shows that granular ZnO samples contain both Zn and O vacancies. Such defects exist as agglomerates of several vacancies and start to recover above 400 °C annealing. It has also been observed that due to annealing temperature difference of 125 °C (from 325 °C to 450 °C), huge change occurs in low temperature photoluminescence (PL) of ZnO. Significant reduction of free to bound (FB) transition ~3.315 eV is observed for increasing the annealing temperature. It has been conjectured that ~3.315 eV PL in ZnO is related to particular decoration (unknown) of both Zn and O vacancies. The methodology of revealing defect-property correlation as employed here can also be applied to other types of semiconductors.

Oxidation Behavior of Carbon Steel: Effect of Formation Temperature and pH of the Environment

Science.gov (United States)

Dubey, Vivekanand; Kain, Vivekanand

2017-11-01

The nature of surface oxide formed on carbon steel piping used in nuclear power plants affects flow-accelerated corrosion. In this investigation, carbon steel specimens were oxidized in an autoclave using demineralized water at various temperatures (150-300 °C) and at pH levels (neutral, 9.5). At low temperatures ( 240 °C) as confirmed by scanning electron microscopy. Electrochemical impedance measurement followed by Mott-Schottky analysis indicated an increase in defect density with exposure duration at 150 °C at neutral pH but a low and stable defect density in alkaline environment. The defect density of the oxide formed at neutral pH at 150-300 °C was always higher than that formed in alkaline environment as reported in the literature.

Function of TiO2 Lattice Defects toward Photocatalytic Processes: View of Electronic Driven Force

Directory of Open Access Journals (Sweden)

Huanan Cui

2013-01-01

Full Text Available Oxygen vacancies and Ti-related defects (OTDs are the main lattice defects of TiO2, which have great influence on its photocatalytic activity. To understand the relationship between the defects and photocatalytic activities, detailed discussions based on the electronic driven force provided by these defects are carried out during the three commonly accepted processes in photocatalytic reactions. It is found that these defects inevitably (i influence the energy structure of the pristine TiO2 as the isolate acceptor/donor level or hybrid with the original orbital, (ii provide a disordered short-range force that confuses the charge carriers transferring to surface active sites, (iii act not only as the surface active sites for trapping the charge carriers but also as the main chemisorption sites for O2, H2O, and organic species. These effects of the defects make them one of the key factors that determine the efficiency of heterogeneous photocatalysis. Clarifying the role of the defects will further facilitate the exploration and the construction of high-performance photocatalysts for practical applications.

Stress Concentration in the Bulk Cr2O3: Effects of Temperature and Point Defects

Directory of Open Access Journals (Sweden)

Mazharul M. Islam

2017-01-01

Full Text Available Modeling the growth and failure of passive oxide films formed on stainless steels is of general interest for the use of stainless steel as structural material and of special interest in the context of life time extension of light water reactors in nuclear power plants. Using the DFT+U approach, a theoretical investigation on the resistance to failure of the chromium-rich inner oxide layer formed at the surface of chromium-containing austenitic alloys (stainless steel and nickel based alloys has been performed. The investigations were done for periodic bulk models. The data at the atomic scale were extrapolated by using the Universal Binding Energy Relationships (UBERs model in order to estimate the mechanical behavior of a 10 μm thick oxide scale. The calculated stress values are in good agreement with experiments. Tensile stress for the bulk chromia was observed. The effects of temperature and structural defects on cracking were investigated. The possibility of cracking intensifies at high temperature compared to 0 K investigations. Higher susceptibility to cracking was observed in presence of defects compared to nondefective oxide, in agreement with experimental observation.

Influence of sample oxidation on the nature of optical luminescence from porous silicon

International Nuclear Information System (INIS)

Coulthard, I.; Antel, W. J. Jr.; Freeland, J. W.; Sham, T. K.; Naftel, S. J.; Zhang, P.

2000-01-01

Site-selective luminescence experiments were performed upon porous-silicon samples exposed to varying degrees of oxidation. The source of different luminescence bands was determined to be due to either quantum confinement in nanocrystalline silicon or defective silicon oxide. Of particular interest is the defective silicon-oxide luminescence band found at 2.1 eV, which was found to frequently overlap with a luminescence band from nanocrystalline silicon. Some of the historical confusion and debate with regards to the source of luminescence from porous silicon can be attributed to this overlap. (c) 2000 American Institute of Physics

The investigation of typical welding defects for 5456 aluminum alloy friction stir welds

International Nuclear Information System (INIS)

Chen Huabin; Yan Keng; Lin Tao; Chen Shanben; Jiang Chengyu; Zhao Yong

2006-01-01

The external factors on the friction stir welding defects are so abundant that the experiments of friction stir welding were conducted for 5456 aluminum alloy. With the changes of the tool tilt angle and material condition, defects can be generated. These defects can be conventional ones (lack of penetration or voids), or lazy S, which are unique to friction stir welding. However, the origin of the defects remains an area of uncertainty. In this study, an attempt has been made to investigate the formation of these defects. The typical welding defects of friction stir welding joint for 5456 aluminum alloy were analyzed and discussed, respectively, by using optical microscopy (OM), energy-dispersive X-ray spectroscopy (EDS) and scanning electron microscope (SEM). The microscopic examination of the nugget zone and fracture location of the weld confirms that the tilt angle can change the plastic material flow patterns in the stir zone and accordingly control the weld properties. In addition, the oxide layer from the initial butt surface during FSW is dispersed at the grain boundary. These A1 2 O 3 particles are actually the major cause of failure of the joint

Internal shorting and fuel loss of a low temperature solid oxide fuel cell with SDC electrolyte

Energy Technology Data Exchange (ETDEWEB)

Zhang, Xinge; Robertson, Mark; Deces-Petit, Cyrille; Qu, Wei; Kesler, Olivera; Maric, Radenka; Ghosh, Dave [Institute for Fuel Cell Innovation, National Research Council Canada, 4250 Wesbrook Mall, Vancouver, BC V6T 1W5 (Canada)

2007-02-10

A solid oxide fuel cell with Sm{sub 0.2}Ce{sub 0.8}O{sub 1.9} (SDC) electrolyte of 10 {mu}m in thickness and Ni-SDC anode of 15 {mu}m in thickness on a 0.8 mm thick Ni-YSZ cermet substrate was fabricated by tape casting, screen printing and co-firing. A composite cathode, 75 wt.% Sm{sub 0.5}Sr{sub 0.5}CoO{sub 3} (SSCo) + 25 wt.% SDC, approximately 50 {mu}m in thickness, was printed on the co-fired half-cell, and sintered at 950 C. The cell showed a high electrochemical performance at temperatures ranging from 500 to 650 C. Peak power density of 545 mW cm{sup -2} at 600 C was obtained. However, the cell exhibited severe internal shorting due to the mixed conductivity of the SDC electrolyte. Both the amount of water collected from the anode outlet and the open circuit voltage (OCV) indicated that the internal shorting current could reach 0.85 A cm{sup -2} or more at 600 C. Zr content inclusions were found at the surface and in the cross-section of the SDC electrolyte, which could be one of the reasons for reduced OCV and oxygen ionic conductivity. Fuel loss due to internal shorting of the thin SDC electrolyte cell becomes a significant concern when it is used in applications requiring high fuel utilization and electrical efficiency. (author)

Structural phase transitions in niobium oxide nanocrystals

Science.gov (United States)

Yuvakkumar, R.; Hong, Sun Ig

2015-09-01

Niobium oxide nanocrystals were successfully synthesized employing the green synthesis method. Phase formation, microstructure and compositional properties of 1, 4 and 7 days incubation treated samples after calcinations at 450 °C were examined using X-ray diffraction, Raman, photoluminescence (PL), infrared, X-ray photoelectron spectra and transmission electron microscopic characterizations. It was observed that phase formation of Nb2O5 nanocrystals was dependent upon the incubation period required to form stable metal oxides. The characteristic results clearly revealed that with increasing incubation and aging, the transformation of cubic, orthorhombic and monoclinic phases were observed. The uniform heating at room temperature (32 °C) and the ligation of niobium atoms due to higher phenolic constituents of utilized rambutan during aging processing plays a vital role in structural phase transitions in niobium oxide nanocrystals. The defects over a period of incubation and the intensities of the PL spectra changing over a period of aging were related to the amount of the defects induced by the phase transition.

Dissolution behavior of irradiated mixed oxide fuel with short stroke shearing for fast reactor reprocessing

International Nuclear Information System (INIS)

Ikeuchi, Hirotomo; Sano, Yuichi; Shibata, Atsuhiro; Koizumi, Tsutomu; Washiya, Tadahiro

2013-01-01

An efficient dissolution process was established for future reprocessing in which mixed-oxide (MOX) fuels with high plutonium contents and dissolver solution with high heavy-metal (HM) concentrations (more than 500 g dm -3 ) will be treated. This dissolution process involves short stroke shearing of fuels (∼10 mm in length). The dissolution kinetics of irradiated MOX fuels and the effects of the Pu content, HM concentration, and fuel form on the dissolution rate were investigated. Irradiated fuel was found to dissolve as 10 2 -10 3 times fast as non-irradiated fuel, but the rate decreased with increasing Pu content. Kinetic analysis based on the fragmentation model, which considers the penetration and diffusion of nitric acid through fuel matrices prior to chemical reaction, indicated that the dissolution rate of irradiated fuel was affected not only by the volume ratio of liquid to solid (L/S ratio) but also by the exposed surface area per unit mole of nitric acid (A/m ratio). The penetration rate of nitric acid is expected to be decreased at high HM concentrations by a reduction in the L/S ratio, but enhanced by shearing the fuel pieces with short strokes and thus enlarging the A/m ratio. (author)

When do oxide precipitates form during consolidation of oxide dispersion strengthened steels?

Energy Technology Data Exchange (ETDEWEB)

Deschamps, A., E-mail: alexis.deschamps@grenoble-inp.fr [Univ. Grenoble Alpes, SIMAP, F-38000 Grenoble (France); CNRS, SIMAP, F-38000 Grenoble (France); De Geuser, F. [Univ. Grenoble Alpes, SIMAP, F-38000 Grenoble (France); CNRS, SIMAP, F-38000 Grenoble (France); Malaplate, J.; Sornin, D. [DEN, DANS, DMN, Service de Recherches Métallurgiques Appliquées, CEA, Université Paris-Saclay, 91191 Gif-Sur-Yvette (France)

2016-12-15

The processing of oxide dispersion strengthened (ODS) steels involves ball milling, where the oxide forming species are driven in solid solution. Precipitation of the nanometre-scale oxides occurs during subsequent annealing and consolidation. This paper reports in-situ Small-Angle X-ray Scattering measurements of the formation of these precipitates during heating of cold-compressed as-milled powders. Clusters are already initially present, and precipitation starts at 300 °C. The maximum precipitate density is achieved at 600 °C, followed by very slow coarsening at higher temperature. These results open the way to understand the coupled evolution of precipitation and crystalline defects during heating and consolidation of ODS steels.

Short-Term Nose-Only Water-Pipe (Shisha Smoking Exposure Accelerates Coagulation and Causes Cardiac Inflammation and Oxidative Stress in Mice

Directory of Open Access Journals (Sweden)

Abderrahim Nemmar

2015-01-01

Full Text Available Background/Aim: Water-pipe smoking (WPS has acquired worldwide popularity, and is disseminating particularly rapidly in Europe and North America. However, little is known about the short-term cardiovascular effects of WPS. Methods: Presently, we assessed the short-term cardiovascular effects of nose-only exposure to mainstream WPS in BALB/c mice for 30 min/day for 5 consecutive days. Control mice were exposed to air. At the end of the exposure period, several cardiovascular endpoints were measured. Results: WPS did not affect the number of leukocytes and the plasma concentrations of C-reactive protein, tumor necrosis factor α (TNFα and interleukin-6 (IL-6. Likewise, plasma levels of lipid peroxidation (LPO, reduced glutathione (GSH and catalase were not affected by WPS. By contrast, WPS aggravated in vivo thrombosis by shortening the thrombotic occlusion time in pial arterioles and venules. The number of circulating platelets was reduced by WPS suggesting the occurrence of platelet aggregation in vivo. Elevated concentrations of fibrinogen and plasminogen activator inhibitor-1 were seen after the exposure to WPS. Blood samples taken from mice exposed to WPS and exposed to adenosine diphosphate showed more platelet aggregation. The heart concentrations of IL-6 and TNFα were augmented by WPS. Likewise, heart levels of LPO, reactive oxygen species and the antioxidants catalase and GSH were increased by WPS. However, the systolic blood pressure and heart rate were not affected by WPS. Conclusion: It can be concluded that short-term exposure to WPS exerts procoagulatory effects and induce cardiac inflammation and oxidative stress. At the time point investigated, there was no evidence for blood inflammation or oxidative stress.

Vacancy-type defects in electron and proton irradiated II-VI compounds

International Nuclear Information System (INIS)

Brunner, S.; Puff, W.; Balogh, A.G.; Baumann, H.

1997-01-01

In this contribution, the authors present a study aimed at investigating the basic properties of radiation induced defects in ZnS and ZnO and the influence of the atmosphere on the annealing characteristics of the defects. Positron annihilation experiments (both lifetime and Doppler-broadening measurements) were performed on both single- and polycrystalline samples, irradiated with 3 MeV protons or 1 MeV electrons. For ZnS it was found that both electron and proton irradiation caused significant changes in the positron annihilation characteristics. The annealing of proton irradiated ZnS in air leads to significant oxidation and eventual transformation into ZnO

Dynamic Wheel/Rail Rolling Contact at Singular Defects with Application to Squats

NARCIS (Netherlands)

Zhao, X.

2012-01-01

Squats, as a kind of short wavelength rail surface defects, have become one of the main rolling contact fatigue problems in railways worldwide. The purpose of this work is to better understand the squatting phenomenon, contribute to reduction and even prevention of squat occurrence, and thereby

Buried oxide layer in silicon

Science.gov (United States)

Sadana, Devendra Kumar; Holland, Orin Wayne

2001-01-01

A process for forming Silicon-On-Insulator is described incorporating the steps of ion implantation of oxygen into a silicon substrate at elevated temperature, ion implanting oxygen at a temperature below 200.degree. C. at a lower dose to form an amorphous silicon layer, and annealing steps to form a mixture of defective single crystal silicon and polycrystalline silicon or polycrystalline silicon alone and then silicon oxide from the amorphous silicon layer to form a continuous silicon oxide layer below the surface of the silicon substrate to provide an isolated superficial layer of silicon. The invention overcomes the problem of buried isolated islands of silicon oxide forming a discontinuous buried oxide layer.

Epididymis response partly compensates for spermatozoa oxidative defects in snGPx4 and GPx5 double mutant mice.

Directory of Open Access Journals (Sweden)

Anaïs Noblanc

Full Text Available We report here that spermatozoa of mice lacking both the sperm nucleus glutathione peroxidase 4 (snGPx4 and the epididymal glutathione peroxidase 5 (GPx5 activities display sperm nucleus structural abnormalities including delayed and defective nuclear compaction, nuclear instability and DNA damage. We show that to counteract the GPx activity losses, the epididymis of the double KO animals mounted an antioxydant response resulting in a strong increase in the global H(2O(2-scavenger activity especially in the cauda epididymis. Quantitative RT-PCR data show that together with the up-regulation of epididymal scavengers (of the thioredoxin/peroxiredoxin system as well as glutathione-S-transferases the epididymis of double mutant animals increased the expression of several disulfide isomerases in an attempt to recover normal disulfide-bridging activity. Despite these compensatory mechanisms cauda-stored spermatozoa of double mutant animals show high levels of DNA oxidation, increased fragmentation and greater susceptibility to nuclear decondensation. Nevertheless, the enzymatic epididymal salvage response is sufficient to maintain full fertility of double KO males whatever their age, crossed with young WT female mice.

Radiation annealing in cuprous oxide

DEFF Research Database (Denmark)

Vajda, P.

1966-01-01

Experimental results from high-intensity gamma-irradiation of cuprous oxide are used to investigate the annealing of defects with increasing radiation dose. The results are analysed on the basis of the Balarin and Hauser (1965) statistical model of radiation annealing, giving a square...

Radiation-enhanced short channel effects due to multi-dimensional influence from charge at trench isolation oxides

International Nuclear Information System (INIS)

Youk, G.U.; Khare, P.S.; Schrimpf, R.D.; Massengill, L.W.; Galloway, K.F.

1999-01-01

Radiation enhanced drain induced barrier lowering (DIBL) was experimentally observed and verified by 3-D simulations for submicron devices with trench isolation oxides. Submicron MOSFETs with shallow trench isolation were exposed to total-ionizing-dose radiation. Prior to irradiation, the devices exhibited near-ideal current-voltage characteristics, with no significant short-channel effects for as-drawn gate lengths of 0.4 microm. Following irradiation, the off-state leakage current increased significantly for total doses above about 650 krad(SiO 2 ). In addition, the irradiated devices exhibited DIBL that increased the drain current by 5--10x for a gate length of 0.4 microm (the nominal minimum gate length for this process) and much more for slightly shorter devices (0.35 microm). The increase in the off-state leakage current and the accompanying DIBL are shown to be associated with a parasitic field-effect transistor that is present at the edge of the shallow trench. Three-dimensional simulations are used to illustrate the effect. Simulations show that trapped charge at the trench sidewalls enhance the DIBL by depleting the edges of the channel. Radiation-induced charge may decrease the effectiveness of short-channel engineering

Thermal annealing of carbon nanotubes reveals a toxicological impact of the structural defects

Energy Technology Data Exchange (ETDEWEB)

Figarol, Agathe, E-mail: figarol@emse.fr [Ecole Nationale Supérieure des Mines, SPIN-EMSE, CNRS: UMR 5307, LGF (France); Pourchez, Jérémie, E-mail: pourchez@emse.fr [Ecole Nationale Supérieure des Mines, CIS-EMSE, EA 4624, SFR IFRESIS, LINA (France); Boudard, Delphine [Université Jean Monnet Saint-Etienne, EA 4624, SFR IFRESIS, LINA (France); Forest, Valérie [Ecole Nationale Supérieure des Mines, CIS-EMSE, EA 4624, SFR IFRESIS, LINA (France); Berhanu, Sarah [Armines - Mines ParisTech, Centre des Matériaux, CNRS UMR 7633 (France); Tulliani, Jean-Marc [Politecnico di Torino, Department of Applied Science and Technology (Italy); Lecompte, Jean-Pierre [Centre Européen de la céramique CNRS: UMR 7315, SPCTS (France); Cottier, Michèle [Université Jean Monnet Saint-Etienne, EA 4624, SFR IFRESIS, LINA (France); Bernache-Assollant, Didier [Ecole Nationale Supérieure des Mines, CIS-EMSE, EA 4624, SFR IFRESIS, LINA (France); Grosseau, Philippe [Ecole Nationale Supérieure des Mines, SPIN-EMSE, CNRS: UMR 5307, LGF (France)

2015-04-15

The biological response to pristine and annealed multi-walled carbon nanotubes (MWCNT) was assessed on murine macrophages (RAW 264.7). First, the physicochemical features of the as-produced MWCNT and annealed at 2125 °C for 1 h were fully characterized. A decrease in structural defects, hydrophobicity and catalytic impurities was detected after annealing. Thereafter, their impact on cytotoxicity, oxidative stress, and pro-inflammatory response was investigated at concentrations ranging from 15 to 120 µg mL{sup −1}. No effect of the 2125 °C treatment was detected on the cytotoxicity. In contrast, the annealed carbon nanotubes showed a significant increase of the pro-inflammatory response. We assumed that this behavior was due to the reduction in structural defects that may modify the layer of adsorbed biomolecules. Surprisingly, the purification of metallic catalysts did not have any significant impact on the oxidative stress. We suggested that the structural improvements from the 2125 °C treatment can decrease the carbon nanotube scavenging capacity and thus allow a higher free radical release which may counterbalance the decrease of oxidative stress due to a lower content of metallic impurities.

Growth of epitaxially oriented Ag nanoislands on air-oxidized Si(1 1 1)-(7 × 7) surfaces: Influence of short-range order on the substrate

International Nuclear Information System (INIS)

Roy, Anupam; Bhattacharjee, K.; Ghatak, J.; Dev, B.N.

2012-01-01

Clean Si(1 1 1)-(7 × 7) surfaces, followed by air-exposure, have been investigated by reflection high-energy electron diffraction (RHEED) and scanning tunneling microscopy (STM). Fourier transforms (FTs) of STM images show the presence of short-range (7 × 7) order on the air-oxidized surface. Comparison with FTs of STM images from a clean Si(1 1 1)-(7 × 7) surface shows that only the 1/7th order spots are present on the air-oxidized surface. The oxide layer is ∼2-3 nm thick, as revealed by cross-sectional transmission electron microscopy (XTEM). Growth of Ag islands on these air-oxidized Si(1 1 1)-(7 × 7) surfaces has been investigated by in situ RHEED and STM and ex situ XTEM and scanning electron microscopy. Ag deposition at room temperature leads to the growth of randomly oriented Ag islands while preferred orientation evolves when Ag is deposited at higher substrate temperatures. For deposition at 550 °C face centered cubic Ag nanoislands grow with a predominant epitaxial orientation [11 ¯ 0] Ag ||[11 ¯ 0] Si , (1 1 1) Ag || (1 1 1) Si along with its twin [1 ¯ 10] Ag ||[11 ¯ 0] Si , (1 1 1) Ag || (1 1 1) Si , as observed for epitaxial growth of Ag on Si(1 1 1) surfaces. The twins are thus rotated by a 180° rotation of the Ag unit cell about the Si[1 1 1] axis. It is intriguing that Ag nanoislands follow an epitaxial relationship with the Si(1 1 1) substrate in spite of the presence of a 2-3 nm thick oxide layer between Ag and Si. Apparently the short-range order on the oxide surface influences the crystallographic orientation of the Ag nanoislands.

Immobile defects in ferroelastic walls: Wall nucleation at defect sites

Science.gov (United States)

He, X.; Salje, E. K. H.; Ding, X.; Sun, J.

2018-02-01

Randomly distributed, static defects are enriched in ferroelastic domain walls. The relative concentration of defects in walls, Nd, follows a power law distribution as a function of the total defect concentration C: N d ˜ C α with α = 0.4 . The enrichment Nd/C ranges from ˜50 times when C = 10 ppm to ˜3 times when C = 1000 ppm. The resulting enrichment is due to nucleation at defect sites as observed in large scale MD simulations. The dynamics of domain nucleation and switching is dependent on the defect concentration. Their energy distribution follows the power law with exponents during yield between ɛ ˜ 1.82 and 2.0 when the defect concentration increases. The power law exponent is ɛ ≈ 2.7 in the plastic regime, independent of the defect concentration.

Photoluminescence as a tool for characterizing point defects in semiconductors

Science.gov (United States)

Reshchikov, Michael

2012-02-01

Photoluminescence is one of the most powerful tools used to study optically-active point defects in semiconductors, especially in wide-bandgap materials. Gallium nitride (GaN) and zinc oxide (ZnO) have attracted considerable attention in the last two decades due to their prospects in optoelectronics applications, including blue and ultraviolet light-emitting devices. However, in spite of many years of extensive studies and a great number of publications on photoluminescence from GaN and ZnO, only a few defect-related luminescence bands are reliably identified. Among them are the Zn-related blue band in GaN, Cu-related green band and Li-related orange band in ZnO. Numerous suggestions for the identification of other luminescence bands, such as the yellow band in GaN, or green and yellow bands in ZnO, do not stand up under scrutiny. In these conditions, it is important to classify the defect-related luminescence bands and find their unique characteristics. In this presentation, we will review the origin of the major luminescence bands in GaN and ZnO. Through simulations of the temperature and excitation intensity dependences of photoluminescence and by employing phenomenological models we are able to obtain important characteristics of point defects such as carrier capture cross-sections for defects, concentrations of defects, and their charge states. These models are also used to find the absolute internal quantum efficiency of photoluminescence and obtain information about nonradiative defects. Results from photoluminescence measurements will be compared with results of the first-principle calculations, as well as with the experimental data obtained by other techniques such as positron annihilation spectroscopy, deep-level transient spectroscopy, and secondary ion mass spectrometry.

Compact Models for Defect Diffusivity in Semiconductor Alloys.

Energy Technology Data Exchange (ETDEWEB)

Wright, Alan F. [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States). Nanostructure Physics Department; Modine, Normand A. [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States). Nanostructure Physics Department; Lee, Stephen R. [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States). Advanced Materials Sciences Department; Foiles, Stephen M. [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States). Computational Materials and Data Science Department

2017-09-01

Predicting transient effects caused by short - pulse neutron irradiation of electronic devices is an important part of Sandia's mission. For example , predicting the diffusion of radiation - induced point defects is needed with in Sandia's Qualification Alternative to the Sandia Pulsed Reactor (QASPR) pro gram since defect diffusion mediates transient gain recovery in QASPR electronic devices. Recently, the semiconductors used to fabricate radiation - hard electronic devices have begun to shift from silicon to III - V compounds such as GaAs, InAs , GaP and InP . An advantage of this shift is that it allows engineers to optimize the radiation hardness of electronic devices by using alloy s such as InGaAs and InGaP . However, the computer codes currently being used to simulate transient radiation effects in QASP R devices will need to be modified since they presume that defect properties (charge states, energy levels, and diffusivities) in these alloys do not change with time. This is not realistic since the energy and properties of a defect depend on the types of atoms near it and , therefore, on its location in the alloy. In particular, radiation - induced defects are created at nearly random locations in an alloy and the distribution of their local environments - and thus their energies and properties - evolves with time as the defects diffuse through the alloy . To incorporate these consequential effects into computer codes used to simulate transient radiation effects, we have developed procedures to accurately compute the time dependence of defect energies and properties and then formulate them within compact models that can be employed in these computer codes. In this document, we demonstrate these procedures for the case of the highly mobile P interstitial (I P ) in an InGaP alloy. Further dissemination only as authorized to U.S. Government agencies and their contractors; other requests shall be approved by the originating facility or higher DOE

Current Status and Future Prospects of Copper Oxide Heterojunction Solar Cells

OpenAIRE

Terence K. S. Wong; Siarhei Zhuk; Saeid Masudy-Panah; Goutam K. Dalapati

2016-01-01

The current state of thin film heterojunction solar cells based on cuprous oxide (Cu2O), cupric oxide (CuO) and copper (III) oxide (Cu4O3) is reviewed. These p-type semiconducting oxides prepared by Cu oxidation, sputtering or electrochemical deposition are non-toxic, sustainable photovoltaic materials with application potential for solar electricity. However, defects at the copper oxide heterojunction and film quality are still major constraining factors for achieving high power conversion e...

Thermal-treatment effect on the photoluminescence and gas-sensing properties of tungsten oxide nanowires

International Nuclear Information System (INIS)

Sun, Shibin; Chang, Xueting; Li, Zhenjiang

2010-01-01

Single-crystalline non-stoichiometric tungsten oxide nanowires were initially prepared using a simple solvothermal method. High resolution transmission electron microscopy (HRTEM) investigations indicate that the tungsten oxide nanowires exhibit various crystal defects, including stacking faults, dislocations, and vacancies. A possible defect-induced mechanism was proposed to account for the temperature-dependent morphological evolution of the tungsten oxide nanowires under thermal processing. Due to the high specific surface areas and non-stoichiometric crystal structure, the original tungsten oxide nanowires were highly sensitive to ppm level ethanol at room temperature. Thermal treatment under dry air condition was found to deteriorate the selectivity of room-temperature tungsten oxide sensors, and 400 o C may be considered as the top temperature limit in sensor applications for the solvothermally-prepared nanowires. The photoluminescence (PL) characteristics of tungsten oxide nanowires were also strongly influenced by thermal treatment.

Thermal-treatment effect on the photoluminescence and gas-sensing properties of tungsten oxide nanowires

Energy Technology Data Exchange (ETDEWEB)

Sun, Shibin [College of Electromechanical Engineering, Qingdao University of Science and Technology, Qingdao 266061, Shandong (China); Chang, Xueting [Institute of Materials Science and Engineering, Ocean University of China, Qingdao 266100, Shandong (China); Li, Zhenjiang, E-mail: zjli126@126.com [College of Electromechanical Engineering, Qingdao University of Science and Technology, Qingdao 266061, Shandong (China)

2010-09-15

Single-crystalline non-stoichiometric tungsten oxide nanowires were initially prepared using a simple solvothermal method. High resolution transmission electron microscopy (HRTEM) investigations indicate that the tungsten oxide nanowires exhibit various crystal defects, including stacking faults, dislocations, and vacancies. A possible defect-induced mechanism was proposed to account for the temperature-dependent morphological evolution of the tungsten oxide nanowires under thermal processing. Due to the high specific surface areas and non-stoichiometric crystal structure, the original tungsten oxide nanowires were highly sensitive to ppm level ethanol at room temperature. Thermal treatment under dry air condition was found to deteriorate the selectivity of room-temperature tungsten oxide sensors, and 400 {sup o}C may be considered as the top temperature limit in sensor applications for the solvothermally-prepared nanowires. The photoluminescence (PL) characteristics of tungsten oxide nanowires were also strongly influenced by thermal treatment.

A new criterion for defective used nuclear fuel in dry storage condition

Energy Technology Data Exchange (ETDEWEB)

Desgranges, Lionel [CEA Cadarache Bat 316 13108Saint-Paul lez Durance (France); Poulesquen, Arnaud; Ferry, Cecile [CEA Saclay Bat. 450 point courrier no 40 - 91191 Gif-sur-Yvette cedex (France)

2008-07-01

In the frame of the PRECCI program, the mechanisms associated to the oxidation of used nuclear fuel were studied. Experiments on un-irradiated UO{sub 2}, evidenced that the oxidation proceeded in three stages (namely UO{sub 2} {yields} U{sub 4}O{sub 9}, U{sub 4}O{sub 9} {yields} U{sub 3}O{sub 7} and U{sub 3}O{sub 7} {yields} U{sub 3}O{sub 8}) instead of 2 as previously proposed in literature. Experiments on irradiated fuel fragments evidenced the existence of an oxidation front inside the fuel fragment associated to some fission gas release. The degradation of a fuel rod slice was simulated in situ with CROCODILE experiment, and shown to be due to the fuel swelling. Finally a new criterion was proposed defining a safe duration for defective used fuel in a dry air facility in the case of an accident scenario where a breach in a container would put a defective fuel rod in contact with atmosphere. The criterion is related to the time needed to form a given thickness of U{sub 4}O{sub 9{gamma}}{sub +{psi}} with a higher stoichiometry than a given value, in irradiated grains. This U{sub 4}O{sub 9{gamma}}{sub +{psi}} layer thickness is assumed to simulate the onset of the ceramic fragmentation. This safety duration was calculated thanks to a new modeling of fuel fragment oxidation.

Application of Volta potential mapping to determine metal surface defects

International Nuclear Information System (INIS)

Nazarov, A.; Thierry, D.

2007-01-01

As a rule, stress or fatigue cracks originate from various surface imperfections, such as pits, inclusions or locations showing a residual stress. It would be very helpful for material selection to be able to predict the likelihood of environment-assisted cracking or pitting corrosion. By using Scanning Kelvin Probe (the vibrating capacitor with a spatial resolution of 80 μm) the profiling of metal electron work function (Volta potential) in air is applied to the metal surfaces showing residual stress, MnS inclusions and wearing. The Volta potential is influenced by the energy of electrons at the Fermi level and drops generally across the metal/oxide/air interfaces. Inclusions (e.g. MnS) impair continuity of the passive film that locally decreases Volta potential. The stress applied gives rise to dislocations, microcracks and vacancies in the metal and the surface oxide. The defects decrease Volta and corrosion potentials; reduce the overvoltage for processes of passivity breakdown and anodic metal dissolution. These 'anodic' defects can be visualized in potential mapping that can help us to predict locations with higher risk of pitting corrosion or cracking

Formation of Oxides in the Interior of Friction Stir Welds

Science.gov (United States)

Schneider, Judy; Chen, Po; Nunes, Arthur C., Jr.

2016-01-01

In friction stir welding (FSWing) the actual solid state joining takes place between the faying surfaces which form the weld seam. Thus the seam trace is often investigated for clues when the strength of the weld is reduced. Aluminum and its alloys are known to form a native, protective oxide on the surface. If these native surface oxides are not sufficiently broken up during the FSW process, they are reported to remain in the FSW interior and weaken the bond strength. This type of weld defect has been referred to as a lazy "S", lazy "Z", joint line defect, kissing bond, or residual oxide defect. Usually these defects are mitigated by modification of the process parameters, such as increased tool rotation rate, which causes a finer breakup of the native oxide particles. This study proposes that there may be an alternative mechanism for formation of oxides found within the weld nugget. As the oxidation rate increases at elevated temperatures above 400ºC, it may be possible for enhanced oxidation to occur on the interior surfaces during the FSW process from entrained air entering the seam gap. Normally, FSWs of aluminum alloys are made without a purge gas and it is unknown how process parameters and initial fit up could affect a potential air path into the interior during the processing. In addition, variations in FSW parameters, such as the tool rotation, are known to have a strong influence on the FSW temperature which may affect the oxidation rate if internal surfaces are exposed to entrained air. A series of FSWs were made in 3 different thickness panels of AA2219 (0.95, 1.27 and 1.56 cm) at 2 different weld pitches. As the thickness of the panels increased, there was an increased tendency for a gap to form in advance of the weld tool. If sufficient air is able to enter the workpiece gap prior to consolidation, the weld temperature can increase the oxidation rate on the interior surfaces. These oxidation rates would also be accelerated in areas of localized

Formation of oxygen-related defects enhanced by fluorine in BF{sub 2}{sup +}-implanted Si studied by a monoenergetic positron beam

Energy Technology Data Exchange (ETDEWEB)

Uedono, Akira; Moriya, Tsuyoshi; Tanigawa, Shoichiro [Tsukuba Univ., Ibaraki (Japan). Inst. of Materials Science; Kawano, Takao; Nagai, Ryo; Umeda, Kazunori

1995-12-01

Defects in 25-keV BF{sub 2}{sup +}- or As{sup +}-implanted Si specimens were probed by a monoenergetic positron beam. For the As{sup +}-implanted specimen, the depth profile of defects was obtained from measurements of Doppler broadening profiles as a function of incident positron energy. The major species of the defects was identified as divacancies. For ion-implanted specimens after annealing treatment, oxygen-related defects were found to be formed. For the BF{sub 2}{sup +}-implanted specimen before annealing treatment, such defects were formed in the subsurface region, where oxygen atoms were implanted by recoil from oxide films. This was attributed to enhanced formation of oxygen-related defects by the presence of F atoms. (author)

Densification of Highly Defective Ceria by High Temperature Controlled Re-Oxidation

DEFF Research Database (Denmark)

Ni, De Wei; Glasscock, Julie; Pons, Aénor

2014-01-01

Highly enhanced densification and grain growth of Ce0.9Gd0.1O1.95-δ (CGO, gadolinium-doped ceria, with 10 mol% Gd) is achieved in low oxygen activity atmospheres. However, the material can suffer mechanical failures during cooling when the re-oxidation process is not controlled due to the large...... volume changes. In this work, the redox process of CGO is investigated using dilatometry, microscopy, electrochemical impedance spectroscopy and thermodynamic analysis. In addition, the conditions allowing controlled re-oxidation and cooling in order to preserve the mechanical integrity of the CGO...... component are defined: this can be achieved over a wide temperature range (800−1200◦C) by gradually increasing the oxygen content of the atmosphere. It is found that the electrical conductivity of the CGO, particularly at low temperature (oxidation...

Parkinson's disease associated with impaired oxidative phosphorylation

International Nuclear Information System (INIS)

Finsterer, J.; Jarius, C.; Baumgartner, M.

2001-01-01

Parkinson's disease may be due to primary or secondary oxidative phosphorylation (OXPHOS) defects. In a 76-year-old man with Parkinson's disease since 1992, slightly but recurrently elevated creatine phosphokinase, recurrently elevated blood glucose, thickening of the left ventricular myocardium, bifascicular block and hypacusis were found. Cerebral MRI showed atrophy, periventricular demyelination, multiple, disseminated, supra- and infratentorial lacunas, and haemosiderin deposits in both posterior horns. Muscle biopsy showed typical features of an OXPHOS defect. Whether the association of Parkinson's disease and impaired OXPHOS was causative or coincidental remains unknown. Possibly, the mitochondrial defect acted as an additional risk factor for Parkinson's disease or the OXPHOS defect worsened the preexisting neurological impairments by a cumulative or synergistic mechanism. In conclusion, this case shows that Parkinson's disease may be associated with a mitochondrially or nuclearly encoded OXPHOS defect, manifesting as hypacusis, myopathy, axonal polyneuropathy, cardiomyopathy and recurrent subclinical ischaemic strokes and haemorrhages. (orig.)

Electrochemical characterization of oxide film formed at high temperature on Alloy 690

Energy Technology Data Exchange (ETDEWEB)

Abraham, Geogy J., E-mail: gja@barc.gov.in [Materials Science Division, BARC, Mumbai 400 085 (India); Bhambroo, Rajan [Deptt. of Metallurgical Engg. and Mat. Sci., IIT Bombay, Mumbai 400 076 (India); Kain, V. [Materials Science Division, BARC, Mumbai 400 085 (India); Shekhar, R. [CCCM, BARC, Hyderabad 500 062 (India); Dey, G.K. [Materials Science Division, BARC, Mumbai 400 085 (India); Raja, V.S. [Deptt. of Metallurgical Engg. and Mat. Sci., IIT Bombay, Mumbai 400 076 (India)

2012-02-15

Highlights: Black-Right-Pointing-Pointer GD-QMS studies of high temperature oxide film formed on Alloy 690. Black-Right-Pointing-Pointer Defect density reduced with increase in temperature. Black-Right-Pointing-Pointer Electrochemical behaviour of oxide film correlated to the Cr-content in oxide. - Abstract: High temperature passivation studies on Alloy 690 were carried out in lithiated water at 250 Degree-Sign C, 275 Degree-Sign C and 300 Degree-Sign C for 72 h. The passive films were characterized by glow discharge-quadrupole mass spectroscopy (GD-QMS) for compositional variation across the depth and micro laser Raman spectroscopy for oxide composition on the surface. The defect density in the oxide films was established from the Mott-Schottky analysis using electrochemical impedance spectroscopy. Electrochemical experiments at room temperature in chloride medium revealed best passivity behaviour by the oxide film formed at 300 Degree-Sign C for 72 h. The electrochemical studies were correlated to the chromium (and oxygen) content of the oxide films. Autoclaving at 300 Degree-Sign C resulted in the best passive film formation on Alloy 690 in lithiated water.

Effects of oxide distributed in grain boundaries on microstructure stability of nanocrystalline metals

Science.gov (United States)

Zhou, Kai; Li, Hui; Biao Pang, Jin; Wang, Zhu

2013-06-01

Nanocrystalline copper and zinc prepared by high-pressure compaction method have been studied by positron lifetime spectroscopy associated with X-ray diffraction. For nanocrystalline Cu, mean grain sizes of the samples decrease after being annealed at 900 °C and increase during aging at 180 °C, revealing that the atoms exchange between the two regions. The positron lifetime results indicate that the vacancy clusters formed in the annealing process are unstable and decomposed at the aging time below 6 hours. In addition, the partially oxidized surfaces of the nanoparticles hinder the grain growth during the ageing at 180 °C, and the vacancy clusters inside the disorder regions which are related to Cu2O need longer aging time to decompose. In the case of nanocrystalline Zn, the open volume defect (not larger than divacancy) is dominant according to the high relative intensity for the short positron lifetime (τ1). The oxide (ZnO) inside the grain boundaries has been found having an effect to hinder the decrease of average positron lifetime (τav) during the annealing, which probably indicates that the oxide stabilizes the microstructure of the grain boundaries. For both nanocrystalline copper and zinc, the oxides in grain boundaries enhance the thermal stability of the microstucture, in spite of their different crystal structures. This effect is very important for the nanocrystalline materials using as radiation resistant materials.

Effects of oxide distributed in grain boundaries on microstructure stability of nanocrystalline metals

International Nuclear Information System (INIS)

Zhou Kai; Li Hui; Pang Jinbiao; Wang Zhu

2013-01-01

Nanocrystalline copper and zinc prepared by high-pressure compaction method have been studied by positron lifetime spectroscopy associated with X-ray diffraction. For nanocrystalline Cu, mean grain sizes of the samples decrease after being annealed at 900 °C and increase during aging at 180 °C, revealing that the atoms exchange between the two regions. The positron lifetime results indicate that the vacancy clusters formed in the annealing process are unstable and decomposed at the aging time below 6 hours. In addition, the partially oxidized surfaces of the nanoparticles hinder the grain growth during the ageing at 180 °C, and the vacancy clusters inside the disorder regions which are related to Cu 2 O need longer aging time to decompose. In the case of nanocrystalline Zn, the open volume defect (not larger than divacancy) is dominant according to the high relative intensity for the short positron lifetime (τ 1 ). The oxide (ZnO) inside the grain boundaries has been found having an effect to hinder the decrease of average positron lifetime (τ av ) during the annealing, which probably indicates that the oxide stabilizes the microstructure of the grain boundaries. For both nanocrystalline copper and zinc, the oxides in grain boundaries enhance the thermal stability of the microstucture, in spite of their different crystal structures. This effect is very important for the nanocrystalline materials using as radiation resistant materials.

Observation of nanometer-sized electro-active defects in insulating layers by fluorescence microscopy and electrochemistry.

Science.gov (United States)

Renault, Christophe; Marchuk, Kyle; Ahn, Hyun S; Titus, Eric J; Kim, Jiyeon; Willets, Katherine A; Bard, Allen J

2015-06-02

We report a method to study electro-active defects in passivated electrodes. This method couples fluorescence microscopy and electrochemistry to localize and size electro-active defects. The method was validated by comparison with a scanning probe technique, scanning electrochemical microscopy. We used our method for studying electro-active defects in thin TiO2 layers electrodeposited on 25 μm diameter Pt ultramicroelectrodes (UMEs). The permeability of the TiO2 layer was estimated by measuring the oxidation of ferrocenemethanol at the UME. Blocking of current ranging from 91.4 to 99.8% was achieved. Electro-active defects with an average radius ranging between 9 and 90 nm were observed in these TiO2 blocking layers. The distribution of electro-active defects over the TiO2 layer is highly inhomogeneous and the number of electro-active defect increases for lower degree of current blocking. The interest of the proposed technique is the possibility to quickly (less than 15 min) image samples as large as several hundreds of μm(2) while being able to detect electro-active defects of only a few tens of nm in radius.

Structure of short-range-ordered iron(III)-precipitates formed by iron(II) oxidation in water containing phosphate, silicate, and calcium

Science.gov (United States)

Voegelin, A.; Frommer, J.; Vantelon, D.; Kaegi, R.; Hug, S. J.

2009-04-01

The oxidation of Fe(II) in water leads to the formation of Fe(III)-precipitates that strongly affect the fate of nutrients and contaminants in natural and engineered systems. Examples include the cycling of As in rice fields irrigated with As-rich groundwater or the treatment of drinking water for As removal. Knowledge of the types of Fe(III)-precipitates forming in such systems is essential for the quantitative modeling of nutrient and contaminant dynamics and for the optimization of water purification techniques on the basis of a mechanistic understanding of the relevant biogeochemical processes. In this study, we investigated the local coordination of Fe, P, and Ca in Fe(III)-precipitates formed by aeration of synthetic Fe(II)-containing groundwater with variable composition (pH 7, 2-30 mg/L Fe(II), 2-20 mg/L phosphate-P, 2-20 mg/L silicate-Si, 8 mM Na-bicarbonate or 2.5 mM Ca-&1.5 mM Mg-bicarbonate). After 4 hours of oxidation, Fe(III)-precipitates were collected on 0.2 µm nylon filters and dried. The precipitates were analyzed by Fe K-edge EXAFS (XAS beamline, ANKA, Germany) and by P and Ca K-edge XANES spectroscopy (LUCIA beamline, SLS, Switzerland). The Fe K-edge EXAFS spectra indicated that local Fe coordination in the precipitates systematically shifted with water composition. As long as water contained P, mainly short-range-ordered Fe(III)-phosphate formed (with molar P/Fe ~0.5). In the absence of P, Fe(III) precipitated as hydrous ferric oxide at high Si/Fe>0.5, as ferrihydrite at intermediate Si/Fe, and mainly as lepidocrocite at Si/Fe<0.2. Analysis of the EXAFS by shell-fitting indicated that Fe(III)-phosphates mainly contained mono- or oligomeric (edge- or corner-sharing) Fe and that the linkage between neighboring Fe(III)-octahedra changed from predominantly edge-sharing in Si-rich hydrous ferric oxide to edge- and corner-sharing in ferrihydrite. Electron microscopic data showed that changes in local precipitate structure were systematically

TCAD analysis of short-circuit oscillations in IGBTs

DEFF Research Database (Denmark)

Reigosa, Paula Diaz; Iannuzzo, Francesco; Rahimo, Munaf

2017-01-01

Insulated-Gate Bipolar Transistors (IGBTs) exhibit a gate-voltage oscillation phenomenon during short-circuit, which can result in a gate-oxide breakdown. The oscillations have been investigated through device simulations and experimental investigations of a 3.3-kV IGBT. It has been found...... during short circuit....

A study of the electrical properties of defects in silicon

International Nuclear Information System (INIS)

Blood, A.M.

1998-01-01

This work contains the most comprehensive qualitative and quantitative electron beam induced current (EBIC) study of recombination at contaminated defects in silicon. It is also a rigorous quantitative investigation of the effect of hydrogen on individual transition metal contaminated defects. In addition, the recombination behaviour exhibited by point and extended defects has been investigated using EBIC and deep level transient spectroscopy (DLTS). As a result of these measurements, techniques for the preparation of transition metal contaminated specimens have been refined. Successful hydrogen passivation of copper, nickel and iron contaminated silicon specimens containing oxidation-induced stacking faults has been achieved in two experimental systems. It is found that hydrogen passivates those states that are deepest in the semiconductor band gap in preference to those that are shallow. Furthermore, it has been concluded that during hydrogen passivation treatment, even at low temperatures, unwanted metallic impurities can be introduced. Three types of recombination behaviour have been identified from the defects-studied in this work and they are discussed with relevance to present recombination models. An investigation of the recombination behaviour of defects that lie in the depletion region and in the specimen bulk has concluded that the recombination type observed is independent of the depth of the defect. Evidence for the presence of compound defects showing mixed recombination behaviour type is presented. In conclusion, it is postulated that the transition metal impurities introduce a 'band of states' with a range of energies rather than a single energy state. This proposal is provided as an explanation for the recombination types found in this work and the effect of the hydrogen passivation. This work is placed in context of previous investigations into the behaviour of dislocations in silicon in the presence of transition metals, and the ability of

O vacancy formation in (Pr/Gd)BaCo2O5.5 and the role of antisite defects

KAUST Repository

Omotayo Akande, Salawu

2017-04-20

In search for materials for intermediate temperature solid oxide fuel cells, (Pr/Gd)BaCo2O5.5 is investigated by first principles calculations. Antisite defects are considered as they may modify the electronic and O diffusion properties but are rarely studied in double perovskite oxides. Octahedrally coordinated Co atoms are shown to realize intermediate and high spin states for PrBaCo2O5.5 and GdBaCo2O5.5, respectively, while pyramidally coordinated Co atoms always have high spin. It turns out that O vacancy formation is significantly easier in PrBaCo2O5.5 than in GdBaCo2O5.5, the difference in formation energy being hardly modified by antisite defects. While pyramidally coordinated Co atoms are not affected, we show that the presence of antisite defects causes parts of the octahedrally coordinated Co atoms to switch from intermediate to high spin.

Studies of defects and defect agglomerates by positron annihilation spectroscopy

DEFF Research Database (Denmark)

Eldrup, Morten Mostgaard; Singh, B.N.

1997-01-01

A brief introduction to positron annihilation spectroscopy (PAS), and in particular lo its use for defect studies in metals is given. Positrons injected into a metal may become trapped in defects such as vacancies, vacancy clusters, voids, bubbles and dislocations and subsequently annihilate from...... the trapped state iri the defect. The annihilation characteristics (e.g., the lifetime of the positron) can be measured and provide information about the nature of the defect (e.g., size, density, morphology). The technique is sensitive to both defect size (in the range from monovacancies up to cavities...

Detection of defects in electron-irradiated synthetic silica quartz probed by positron annihilation

International Nuclear Information System (INIS)

Watauchi, Satoshi; Uedono, Akira; Ujihira, Yusuke; Yoda, Osamu.

1994-01-01

Defects in amorphous SiO 2 films, formed on MOS(metal/oxide/semiconductor) devices as gates, perturb its operation. The positron annihilation techniques, were applied to the study of the annealing behavior of the defects, introduced in the high purity synthetic quartz glass by the irradiation of 3-MeV electrons up to the 1x10 18 e - /cm 2 dosage. It was proved that the positron annihilation techniques were sufficiently sensitive to detect the defects in the electron-irradiated silica glasses. Three types of open-space defects were detected by the positron lifetime measurements. These can be attributed to monovacancy or divacancy type defects, vacancy clusters, and open-volume defects. A high formation probability (∼90%) of positroniums(Ps) was found in unirradiated specimens. These Ps were considered to be formed in open-volume defects. The formation probability of Ps was drastically decreased by the electron irradiation. But the size of open-volume defects was kept unchanged by the irradiation. These facts suggest that vacancy-type defects were introduced by the electron irradiation and that positrons were trapped in these defects. By the isochronal annealing in nitrogen atmosphere, the lifetime component (τ 2 ) and its relative intensity (I 2 ), attributed to positrons trapped in monovacancy or divacancy type defects and annihilated there, changed remarkably. τ 2 was constant in the temperature range up to 300degC, getting slightly shorter between 300degC and 700degC, and constant above 700degC. I 2 decreased gradually up to 300degC, constant between 300degC and 550degC, decreased above 550degC, and constant above 700degC. This revealed that the behavior of the defects, in which positrons were trapped, change by the elevation of the annealing temperature. (author)

Vulnerability to oxidative stress in vitro in pathophysiology of mitochondrial short-chain acyl-CoA dehydrogenase deficiency: response to antioxidants.

Directory of Open Access Journals (Sweden)

Zarazuela Zolkipli

Full Text Available OBJECTIVE: To elucidate the pathophysiology of SCAD deficient patients who have a unique neurological phenotype, among fatty acid oxidation disorders, with early developmental delay, CNS malformations, intractable seizures, myopathy and clinical signs suggesting oxidative stress. METHODS: We studied skin fibroblast cultures from patients homozygous for ACADS common variant c.625G>A (n = 10, compound heterozygous for c.625G>A/c.319C>T (n = 3 or homozygous for pathogenic c.319C>T (n = 2 and c.1138C>T (n = 2 mutations compared to fibroblasts from patients with carnitine palmitoyltransferase 2 (CPT2 (n = 5, mitochondrial trifunctional protein (MTP/long-chain L-3-hydroxyacyl-CoA dehydrogenase (LCHAD (n = 7, and medium-chain acyl-CoA dehydrogenase (MCAD deficiencies (n = 4 and normal controls (n = 9. All were exposed to 50 µM menadione at 37°C. Additional conditions included exposure to 39°C and/or hypoglycemia. Time to 100% cell death was confirmed with trypan blue dye exclusion. Experiments were repeated with antioxidants (Vitamins C and E or N-acetylcysteine, Bezafibrate or glucose and temperature rescue. RESULTS: The most significant risk factor for vulnerability to menadione-induced oxidative stress was the presence of a FAO defect. SCADD fibroblasts were the most vulnerable compared to other FAO disorders and controls, and were similarly affected, independent of genotype. Cell death was exacerbated by hyperthermia and/or hypoglycemia. Hyperthermia was a more significant independent risk factor than hypoglycemia. Rescue significantly prolonged survival. Incubation with antioxidants and Bezafibrate significantly increased viability of SCADD fibroblasts. INTERPRETATION: Vulnerability to oxidative stress likely contributes to neurotoxicity of SCADD regardless of ACADS genotype and is significantly exacerbated by hyperthermia. We recommend rigorous temperature control in SCADD patients during acute illness

Photoluminescence decay dynamics in γ-Ga2O3 nanocrystals: The role of exclusion distance at short time scales

Science.gov (United States)

Fernandes, Brian; Hegde, Manu; Stanish, Paul C.; Mišković, Zoran L.; Radovanovic, Pavle V.

2017-09-01

We developed a comprehensive theoretical model describing the photoluminescence decay dynamics at short and long time scales based on the donor-acceptor defect interactions in γ-Ga2O3 nanocrystals, and quantitatively determined the importance of exclusion distance and spatial distribution of defects. We allowed for donors and acceptors to be adjacent to each other or separated by different exclusion distances. The optimal exclusion distance was found to be comparable to the donor Bohr radius and have a strong effect on the photoluminescence decay curve at short times. The importance of the exclusion distance at short time scales was confirmed by Monte Carlo simulations.

Defect controlled room temperature ferromagnetism in Co-doped barium titanate nanocrystals

International Nuclear Information System (INIS)

Ray, Sugata; Kolen'ko, Yury V; Watanabe, Tomoaki; Yoshimura, Masahiro; Itoh, Mitsuru; Kovnir, Kirill A; Lebedev, Oleg I; Turner, Stuart; Erni, Rolf; Tendeloo, Gustaaf Van; Chakraborty, Tanushree

2012-01-01

Defect mediated high temperature ferromagnetism in oxide nanocrystallites is the central feature of this work. Here, we report the development of room temperature ferromagnetism in nanosized Co-doped barium titanate particles with a size of around 14 nm, synthesized by a solvothermal drying method. A combination of x-ray diffraction with state-of-the-art electron microscopy techniques confirms the intrinsic doping of Co into BaTiO 3 . The development of the room temperature ferromagnetism was tracked down to the different donor defects, namely hydroxyl groups at the oxygen site and oxygen vacancies and their relative concentrations at the surface and the core of the nanocrystal, which could be controlled by post-synthesis drying and thermal treatments.

High-resolution Kendrick Mass Defect Analysis of Poly(ethylene oxide)-based Non-ionic Surfactants and Their Degradation Products.

Science.gov (United States)

Fouquet, Thierry; Shimada, Haruo; Maeno, Katsuyuki; Ito, Kanako; Ozeki, Yuka; Kitagawa, Shinya; Ohtani, Hajime; Sato, Hiroaki

2017-09-01

Matrix assisted laser desorption ionization (MALDI) high-resolution mass spectrometry (HRMS) and the recently introduced high-resolution Kendrick mass defect (HRKMD) analysis are combined to thoroughly characterize non-ionic surfactants made of a poly(ethylene oxide) (PEO) core capped by esters of fatty acids. A PEO monostearate surfactant is first analyzed as a proof of principle of the HRKMD analysis conducted with a fraction of EO as the base unit (EO/X with X being an integer) in lieu of EO for a regular KMD analysis. Data visualization is greatly enhanced and the distributions detected in the MALDI mass spectrum are assigned to a pristine (H, OH)-PEO as well as mono- and di-esterified PEO chains with palmitate and stearate end-groups in HRKMD plots computed with EO/45. The MALDI-HRMS/HRKMD analysis is then successfully applied to the more complex case of ethoxylated hydrogenated castor oil (EHCO) found to contain a large number of hydrogenated ricinoleate moieties (up to 14) in its HRKMD plot computed with EO/43, departing from the expected triglyceride structure. The exhaustiveness of the MALDI-HRMS/HRKMD strategy is validated by comparing the so-obtained fingerprints with results from alternative techniques (electrospray ionization MS, size exclusion and liquid adsorption chromatography, ion mobility spectrometry). Finally, aged non-ionic surfactants formed upon hydrolytic degradation are analyzed by MALDI-HRMS/HRKMD to easily assign the degradation products and infer the associated degradation routes. In addition to the hydrolysis of the ester groups observed for EHCO, chain scissions and new polar end-groups are observed in the HRKMD plot of PEO monostearate arising from a competitive oxidative ageing.

Microstructure and protection characteristics of the naturally formed oxide films on Mg–xZn alloys

International Nuclear Information System (INIS)

Song, Yingwei; Han, En-Hou; Dong, Kaihui; Shan, Dayong; Yim, Chang Dong; You, Bong Sun

2013-01-01

Highlights: •The oxide films on Mg–xZn alloys consist of similar chemical composition. •The higher Zn content results in the thicker but higher defect of the oxide films. •The oxide films exhibit different protection performance under various potentials. -- Abstract: The naturally formed oxide films on Mg–2Zn and Mg–5Zn alloys were investigated by atomic force microscopy (AFM), X-ray photoelectron spectroscopy (XPS) and electrochemical measurements. The oxide films on the both alloys present a similar chemical composition, consisting of surface layer of basic magnesium carbonate and MgO following with MgO and ZnO, but the oxide film on Mg–5Zn is thicker and contains more defects. The protection performance of the oxide film on Mg–5Zn is worse under open circuit potential but better in a suitable anodic potential scope compared with that on Mg–2Zn alloy

Sperm quality and oxidative status as affected by homogenization of liquid-stored boar semen diluted in short- and long-term extenders.

Science.gov (United States)

Menegat, Mariana B; Mellagi, Ana Paula G; Bortolin, Rafael C; Menezes, Tila A; Vargas, Amanda R; Bernardi, Mari Lourdes; Wentz, Ivo; Gelain, Daniel P; Moreira, José Cláudio F; Bortolozzo, Fernando P

2017-04-01

Homogenization of diluted boar semen during storage has for a long time been regarded as beneficial. Recent studies indicated an adverse effect of homogenization on sperm quality for yet unknown reasons. This study aimed to verify the effect of homogenization on sperm parameters and to elucidate the impact of oxidative stress. Twenty-one normospermic ejaculates (21 boars) were diluted with Androstar ® Plus (AND) and Beltsville Thawing Solution (BTS). Semen doses were submitted to no-homogenization (NoHom) or twice-a-day manual homogenization (2xHom) during storage at 17°C for 168h. NoHom and 2xHom were similar (P>0.05) for both short- and long-term extenders with respect to motility and kinematics parameters (CASA system), membrane viability (SYBR-14/PI), acrosome integrity, lipid peroxidation, protein oxidation, intracellular reactive oxygen species, sulfhydryl content, and total radical-trapping antioxidant potential. 2xHom reduced sperm motility and motion kinematics (VCL, VSL, VAP, BCF, and ALH) following the thermoresistance test and presented with a slight increase in pH along the storage (P=0.05) as compared to NoHom. Furthermore, 2xHom semen doses presented with a constant SOD and GSH-Px activity during storage whereas enzymatic activity increased for NoHom at the end of the storage. These findings confirm that homogenization of semen doses is detrimental to sperm quality. Moreover, it is shown that the effect of homogenization is unlikely to be primarily related to oxidative stress. Homogenization is not recommended for storage of liquid boar semen for up to 168h in both short- and long-term extenders. Copyright © 2017 Elsevier B.V. All rights reserved.

Strategies for Managing Massive Defects of the Foot in High-Energy Combat Injuries of the Lower Extremity

Science.gov (United States)

2010-01-01

distraction osteogenesis, bone segment short- ening/rotationplasty, and fusion all have a role to play in salvaging massive bone defects in the foot...internal fixation (Fig. 3B). As a long bone, the metatarsals are also well suited for distraction lengthening. This strategy has been successfully...cuboid bone loss. (C) Oblique foot radiograph demonstrating healed cuboid bone defect. Keeling et al144 Extra- articular bone loss in the calcaneus can

Presentation of a novel model of chitosan- polyethylene oxide-nanohydroxyapatite nanofibers together with bone marrow stromal cells to repair and improve minor bone defects

Directory of Open Access Journals (Sweden)

Asgar Emamgholi

2015-09-01

Full Text Available Objective(s:Various methods for repairing bone defects are presented. Cell therapy is one of these methods. Bone marrow stromal cells (BMSCs seem to be suitable for this purpose. On the other hand, lots of biomaterials are used to improve and repair the defect in the body, so in this study we tried to produce a similar structure to the bone by the chitosan and hydroxyapatite. Materials and Methods: In this study, the solution of chitosan-nanohydroxyapatite-polyethylene oxide (PEO Nanofibers was produced by electrospinning method, and then the BMSCs were cultured on this solution. A piece of chitosan-nanohydroxyapatite Nanofibers with BMSCs was placed in a hole with the diameter of 1 mm at the distal epiphysis of the rat femur. Then the biomechanical and radiographic studies were performed. Results: Biomechanical testing results showed that bone strength was significantly higher in the Nanofiber/BMSCs group in comparison with control group. Also the bone strength in nanofiber/BMSCs group was significant, but in nanofiber group was nearly significant. Radiographic studies also showed that the average amount of callus formation (radio opacity in nanofiber and control group was not significantly different. The callus formation in nanofiber/BMSCs group was increased compared to the control group, and it was not significant in the nanofiber group. Conclusion: Since chitosan-nanohydroxyapatite nanofibers with BMSCs increases the rate of bone repair, the obtained cell-nanoscaffold shell can be used in tissue engineering and cell therapy, especially for bone defects.

Microstructural characteristics of high-temperature oxidation in nickel-base superalloy

International Nuclear Information System (INIS)

Khalid, F.A.

1997-01-01

Superalloys are used for aerospace and nuclear applications where they can withstand high-temperature and severe oxidizing conditions. High-temperature oxidation behavior of a nickel-base superalloy is examined using optical and scanning electron microscopical techniques. The morphology of the oxide layers developed is examined, and EDX microanalysis reveals diffusion of the elements across the oxide-metal interface. Evidence of internal oxidation is presented, and the role of structural defects is considered. The morphology of the oxide-metal interface formed in the specimens exposed in steam and air is examined to elucidate the mechanism of high-temperature oxidation

Dislocation-defect interactions and mechanical properties of crystals

International Nuclear Information System (INIS)

Granato, A.V.

1975-01-01

The influence of dislocation-defect interactions on mechanical properties of crystals is reviewed. Interactions are separated into those producing pinning and those producing viscous drag. Deformation behavior is classified according to the strength of the drag. For small drag, inertial effects become important. For intermediate drag, traditional theories resting on rate theory treatments become applicable. For large drag, viscoelastic behavior is obtained. Measurements are examined for information concerning the basic nature of different sources of short and long range pinning and of drag

Investigation of intrinsic defect magnetic properties in wurtzite ZnO materials

Science.gov (United States)

Fedorov, A. S.; Visotin, M. A.; Kholtobina, A. S.; Kuzubov, A. A.; Mikhaleva, N. S.; Hsu, Hua Shu

2017-10-01

Theoretical and experimental investigations of the ferromagnetism induced by intrinsic defects inside wurtzite zinc oxide structures are performed using magnetic field-dependent circular dichroism (MCD-H), direct magnetization measurement (M-H) by superconducting quantum interference device (SQUID) as well as by generalized gradient density functional theory (GGA-DFT). To investigate localized magnetic moments of bulk material intrinsic defects - vacancies, interstitial atoms and Frenkel defects, various-size periodic supercells are calculated. It is shown that oxygen interstitial atoms (Oi) or zinc vacancies (Znv) generate magnetic moments of 1,98 и 1,26 μB respectively, however, the magnitudes are significantly reduced when the distance between defects increases. At the same time, the magnetic moments of oxygen Frenkel defects are large ( 1.5-1.8 μB) and do not depend on the distance between the defects. It is shown that the origin of the induced ferromagnetism in bulk ZnO is the extra spin density on the oxygen atoms nearest to the defect. Also dependence of the magnetization of ZnO (10 1 ̅ 0) and (0001) thin films on the positions of Oi and Znv in subsurface layers were investigated and it is shown that the magnetic moments of both defects are significantly different from the values inside bulk material. In order to check theoretical results regarding the defect induced ferromagnetism in ZnO, two thin films doped by carbon (C) and having Zn interstitials and oxygen vacancies were prepared and annealed in vacuum and air, respectively. According to the MCD-H and M-H measurements, the film, which was annealed in air, exhibits a ferromagnetic behavior, while the other does not. One can assume annealing of ZnO in vacuum should create oxygen vacancies or Zn interstitial atoms. At that annealing of the second C:ZnO film in air leads to essential magnetization, probably by annihilation of oxygen vacancies, formation of interstitial oxygen atoms or zinc vacancies

Effect of friction on oxidative graphite intercalation and high-quality graphene formation.

Science.gov (United States)

Seiler, Steffen; Halbig, Christian E; Grote, Fabian; Rietsch, Philipp; Börrnert, Felix; Kaiser, Ute; Meyer, Bernd; Eigler, Siegfried

2018-02-26

Oxidative wet-chemical delamination of graphene from graphite is expected to become a scalable production method. However, the formation process of the intermediate stage-1 graphite sulfate by sulfuric acid intercalation and its subsequent oxidation are poorly understood and lattice defect formation must be avoided. Here, we demonstrate film formation of micrometer-sized graphene flakes with lattice defects down to 0.02% and visualize the carbon lattice by transmission electron microscopy at atomic resolution. Interestingly, we find that only well-ordered, highly crystalline graphite delaminates into oxo-functionalized graphene, whereas other graphite grades do not form a proper stage-1 intercalate and revert back to graphite upon hydrolysis. Ab initio molecular dynamics simulations show that ideal stacking and electronic oxidation of the graphite layers significantly reduce the friction of the moving sulfuric acid molecules, thereby facilitating intercalation. Furthermore, the evaluation of the stability of oxo-species in graphite sulfate supports an oxidation mechanism that obviates intercalation of the oxidant.

Effects of in-cascade defect clustering on near-term defect evolution

Energy Technology Data Exchange (ETDEWEB)

Heinisch, H.L. [Pacific Northwest National Lab., Richland, WA (United States)

1997-08-01

The effects of in-cascade defect clustering on the nature of the subsequent defect population are being studied using stochastic annealing simulations applied to cascades generated in molecular dynamics (MD) simulations. The results of the simulations illustrates the strong influence of the defect configuration existing in the primary damage state on subsequent defect evolution. The large differences in mobility and stability of vacancy and interstitial defects and the rapid one-dimensional diffusion of small, glissile interstitial loops produced directly in cascades have been shown to be significant factors affecting the evolution of the defect distribution. In recent work, the effects of initial cluster sizes appear to be extremely important.

Nature and strength of defect interactions in cubic stabilized zirconia

International Nuclear Information System (INIS)

Bogicevic, A.; Wolverton, C.

2003-01-01

The intrinsic ordering tendencies that limit ionic conduction in doped zirconia electrolytes are fully elucidated using first-principles calculations. A detailed analysis of nearly 300 yttria- and scandia-stabilized cubic-zirconia-ordered vacancy compounds reveals a delicate balance between competing elastic and electrostatic interactions. These results explain several outstanding experimental observations and provide substantial insight needed for improving ionic conduction and enabling low-temperature operation of zirconia-based electrolytes. We show that the surprising vacancy ordering in dilute solid solutions is a consequence of repulsive electrostatic and attractive elastic interactions that balance at third-neighbor vacancy separations. In contrast, repulsive elastic vacancy-dopant interactions prevail over electrostatic attraction at all probed defect separations in YSZ and lead to very weak ordering preferences in ScSZ. The total electronic contribution to the defect interactions is shown to be strongly dominated by simple point-charge electrostatics, leaving speciation of defect ordering for a given class of aliovalent dopants to the elastic term. Thus, ion size becomes a critical parameter in controlling the ionic conductivity of doped oxide electrolytes

Method for calculating ionic and electronic defect concentrations in y-stabilised zirconia

Energy Technology Data Exchange (ETDEWEB)

Poulsen, F W [Risoe National Lab., Materials Research Dept., Roskilde (Denmark)

1997-10-01

A numerical (trial and error) method for calculation of concentration of ions, vacancies and ionic and electronic defects in solids (Brouwer-type diagrams) is presented. No approximations or truncations of the set of equations describing the chemistry for the various defect regions are used. Doped zirconia and doped thoria with simultaneous presence of protonic and electronic defects are taken as examples: 7 concentrations as function of oxygen partial pressure and/or water vapour partial pressure are determined. Realistic values for the equilibrium constants for equilibration with oxygen gas and water vapour, as well as for the internal equilibrium between holes and electrons were taken from the literature. The present mathematical method is versatile - it has also been employed by the author to treat more complex systems, such as perovskite structure oxides with over- and under-stoichiometry in oxygen, cation vacancies and simultaneous presence of protons. (au) 6 refs.

Lattice defects of ZnO and hybrids with GO: Characterization, EPR and optoelectronic properties

Science.gov (United States)

Ahmed, Gulzar; Hanif, Muddasir; Mahmood, Khalid; Yao, Rihui; Ning, Honglong; jiao, Dongling; Wu, Mingmei; Khan, Javid; Liu, Zhongwu

2018-02-01

We have prepared and combined ZnO nanoparticles (ZnO-NPs) with different graphene oxide (GO) contents (10%, 20% and 30%) via microwave processing. The procedure provided well-dispersed ZnO-NPs between and onto the rGO layers (GZCs). The annealing temperature and graphene oxide contents affected the UV-Vis absorption, PL emission, defect-states of the ZnO, EPR signals, photo-electrochemical response and charge transfer properties. The HRTEM microscopy images of the GZCs showed interpenetrating structures and clearly visible vacancy defects. The results indicated that the defect sites (Zn interstitials, oxygen vacancy, ionized zinc vacancy and oxygen interstitials) significantly decreased after hybridization with GO. The photo-conversion efficiency of the GZC-10% (η = 13.1 x 10-3%), is 13 times higher than the ZnO-NPs (η = 1.02 x 10-3%) illustrating higher exciton production and separation efficiency of the GZCs under photo-excitation. The GZC-10% has lower (8-15 Ω) charge transfer resistance (Rct) compared to all the GZCs under same experimental conditions, therefore an important reason of better performance of the GZC 10%. The EPR spectra showed presence of radicals in all the samples with GZC 10% most intense signal among the different GZCs.

Lattice defects of ZnO and hybrids with GO: Characterization, EPR and optoelectronic properties

Directory of Open Access Journals (Sweden)

Gulzar Ahmed

2018-02-01

Full Text Available We have prepared and combined ZnO nanoparticles (ZnO-NPs with different graphene oxide (GO contents (10%, 20% and 30% via microwave processing. The procedure provided well-dispersed ZnO-NPs between and onto the rGO layers (GZCs. The annealing temperature and graphene oxide contents affected the UV-Vis absorption, PL emission, defect-states of the ZnO, EPR signals, photo-electrochemical response and charge transfer properties. The HRTEM microscopy images of the GZCs showed interpenetrating structures and clearly visible vacancy defects. The results indicated that the defect sites (Zn interstitials, oxygen vacancy, ionized zinc vacancy and oxygen interstitials significantly decreased after hybridization with GO. The photo-conversion efficiency of the GZC-10% (η = 13.1 x 10-3%, is 13 times higher than the ZnO-NPs (η = 1.02 x 10-3% illustrating higher exciton production and separation efficiency of the GZCs under photo-excitation. The GZC-10% has lower (8-15 Ω charge transfer resistance (Rct compared to all the GZCs under same experimental conditions, therefore an important reason of better performance of the GZC 10%. The EPR spectra showed presence of radicals in all the samples with GZC 10% most intense signal among the different GZCs.

Defects Identification and Effects of Annealing on Lu2(1-xY2xSiO5 (LYSO Single Crystals for Scintillation Application

Directory of Open Access Journals (Sweden)

Samuel Blahuta

2011-07-01

Full Text Available The nature, properties and relative concentrations of electronic defects were investigated by Thermoluminescence (TL in Lu2(1-xY2xSiO5 (LYSO single crystals. Ce and Tb-doped single crystals, grown by the Czochralski technique (CZ, revealed similar traps in TL. LYSO:Ce single crystals were grown by the Floating-Zone technique (FZ with increasing oxygen concentration in the growth atmosphere. TL intensity is strongly dependent on the oxygen content of the material, and oxygen vacancies are proven to be the main electronic defects in LYSO. The effects of oxidizing and reducing annealing post-treatment on these defects were investigated. While oxidizing treatments efficiently reduce the amount of electronic defects, reducing treatments increase the amount of existing traps. In a thermally assisted tunneling mechanism, the localization of oxygen vacancies around the dopant is discussed. They are shown to be in the close vicinity of the dopant, though not in first neighbor positions.

Prevention of burn-on defect on surface of hydroturbine blade casting of ultra-low-carbon refining stainless steel

Directory of Open Access Journals (Sweden)

Li Ling

2008-08-01

Full Text Available The burn-on sand is common surface defect encountered in CO2-cured silicate-bonded sand casting of hydroturbine blade of ultra-low-carbon martensitic stainless steel, its feature, causes and prevention measures are presented in this paper. Experiments showed that the burn-on defect is caused by oxidization of chromium in the molten steel at high temperature and can be effectively eliminated by using chromium-corundum coating.

Dirichlet topological defects

International Nuclear Information System (INIS)

Carroll, S.M.; Trodden, M.

1998-01-01

We propose a class of field theories featuring solitonic solutions in which topological defects can end when they intersect other defects of equal or higher dimensionality. Such configurations may be termed open-quotes Dirichlet topological defects,close quotes in analogy with the D-branes of string theory. Our discussion focuses on defects in scalar field theories with either gauge or global symmetries, in 3+1 dimensions; the types of defects considered include walls ending on walls, strings on walls, and strings on strings. copyright 1998 The American Physical Society

On an aspect of kinetics both defects accumulation and gas absorption in an irradiated metals oxides; K voprosu o kinetike nakopleniya defektov i adsorbtsii gazov v obluchennykh oksidakh metallov

Energy Technology Data Exchange (ETDEWEB)

Tuseev, T [Mekhdunarodnyj Kazakhsko-Turetskij Univ. im. Kh.A. Yasavi, Turkestan (Kazakhstan); Polyakov, A I; Bitenbaev, M I [Fiziko-Tekhnicheskij Inst., Almaty (Kazakhstan)

2001-07-01

In the work an analysis of experimental data during study both gases adsorption processes and radiation defects accumulation in irradiated (ultraviolet, gamma-, neutron-, alpha-particle- and proton radiation) in the oxides (SiO{sub 2}, Al{sub 2}O{sub 3}, BeO, Se{sub 2}O{sub 3}, Dy{sub 2}O{sub 3}, La{sub 2}O{sub 3}, Er{sub 2}O{sub 3}) is carried out. It is determined, that these processes are correlating with each other and equivalent kinetic equations for its description are proposed.

Grain boundary defects initiation at the outer surface of dissimilar welds: corrosion mechanism studies

International Nuclear Information System (INIS)

De Bouvier, O.; Yrieix, B.

1995-11-01

Dissimilar welds located on the primary coolant system of the French PWR I plants exhibit grain boundary defects in the true austenitic zones of the first buttering layer. If grain boundaries reach the interface, they can extend to the martensitic band. Those defects are filled with compact oxides. In addition, the ferritic base metal presents some pits along the interface. Nowadays, three mechanisms are proposed to explain the initiation of those defects: stress corrosion cracking, intergranular corrosion and high temperature intergranular oxidation. This paper is dealing with the study of the mechanisms involved in the corrosion phenomenon. Intergranular corrosion tests performed on different materials show that only the first buttering layer, even with some δ ferrite, is sensitized. The results of stress corrosion cracking tests in water solutions show that intergranular cracking is possible on a bulk material representative of the first buttering layer. It is unlikely on actual dissimilar welds where the ferritic base metal protects the first austenitic layer by galvanic coupling. Therefore, the stress corrosion cracking assumption cannot explain the initiation of the defects in aqueous environment. The results of the investigations and of the corrosion studies led to the conclusion that the atmosphere could be the only possible aggressive environment. This conclusion is based on natural atmospheric exposure and accelerated corrosion tests carried out with SO 2 additions in controlled atmosphere. They both induce a severe intergranular corrosion on true sensitized austenitic materials. This corrosion studies cannot conclude definitively on the causes of the defect initiation on field, but they show that the atmospheric corrosion could produce intergranular attacks in the pure austenitic zones of the first buttering layer of the dissimilar welds and that this corrosion is stress assisted. (author). 1 ref., 6 figs., 4 tabs

Structured medium and long chain triglycerides show short-term increases in fat oxidation, but no changes in adiposity in men.

Science.gov (United States)

Roynette, Catherine E; Rudkowska, Iwona; Nakhasi, Dilip K; Jones, Peter J H

2008-05-01

Medium chain triglycerides (MCT) have been suggested as modulators of human energy expenditure (EE) and thus may influence total and regional body fat distribution. To investigate in overweight men the effects of structured medium and long chain triglycerides on EE, substrate oxidation and body adiposity, compared to extra virgin olive oil (OO). In a 6 week single-blind crossover study, 23 overweight men were randomly assigned to consume a standard high-fat diet of which 75% total fat was provided as either structured medium and long chain triglycerides referred to as structured oil (StO), or OO. EE and body composition were measured using indirect calorimetry and magnetic resonance imaging, respectively, at weeks 1 and 6 of each phase. Body weight decreased (pstructured medium and long chain triglyceride oil increases short-term fat oxidation but fails to modulate body weight or adiposity through a change in EE.

Muscle Aging and Oxidative Stress in Wild-Caught Shrews

Science.gov (United States)

Hindle, Allyson G.; Lawler, John M.; Campbell, Kevin L.; Horning, Markus

2010-01-01

Red-toothed shrews (Soricidae, subfamily Soricinae) are an intriguing model system to examine the free radical theory of aging in wild mammals, given their short (<18 month) lifespan and high mass-specific metabolic rates. As muscle performance underlies both foraging ability and predator avoidance, any age-related decline should be detrimental to fitness and survival. Muscle samples of water shrews (Sorex palustris) and sympatrically distributed short-tailed shrews (Blarina brevicauda) were therefore assessed for oxidative stress markers, protective antioxidant enzymes and apoptosis. Activity levels of catalase and glutathione peroxidase increased with age in both species. Similarly, Cu,Zn-superoxide dismutase isoform content was elevated significantly in older animals of both species (increases of 60% in the water shrew, 25% in the short-tailed shrew). Only one oxidative stress marker (lipid peroxidation) was age-elevated; the others were stable or declined (4-hydroxynonenal adducts and dihydroethidium oxidation). Glutathione peroxidase activity was significantly higher in the short-tailed shrew, while catalase activity was 2× higher in water shrews. Oxidative stress indicators were on average higher in short-tailed shrews. Apoptosis occurred in <1% of myocytes examined, and did not increase with age. Within the constraints of the sample size we found evidence of protection against elevated oxidative stress in wild-caught shrews. PMID:20109576

Study of electrical fatigue by defect engineering in organic light-emitting diodes

International Nuclear Information System (INIS)

Gassmann, Andrea; Yampolskii, Sergey V.; Klein, Andreas; Albe, Karsten; Vilbrandt, Nicole; Pekkola, Oili; Genenko, Yuri A.; Rehahn, Matthias; Seggern, Heinz von

2015-01-01

Graphical abstract: - Highlights: • Electrical fatigue is investigated in PPV-based polymer light-emitting diodes. • Bromide defects remaining from Gilch synthesis limit PLED lifetime. • Electrical stress yields lower hole mobility and transition to dispersive transport. • Triplet excitons reduce lifetime and EL-emission-induced degradation observed. • Self-consistent drift-diffusion model for charge carrier injection and transport. - Abstract: In this work the current knowledge on the electrical degradation of polymer-based light-emitting diodes is reviewed focusing especially on derivatives of poly(p-phenylene-vinylene) (PPV). The electrical degradation will be referred to as electrical fatigue and is understood as mechanisms, phenomena and material properties that change during continuous operation of the device at constant current. The focus of this review lies especially on the effect of chemical synthesis on the transport properties of the organic semiconductor and the device lifetimes. In addition, the prominent transparent conductive oxide indium tin oxide as well as In 2 O 3 will be reviewed and how their properties can be altered by the processing conditions. The experiments are accompanied by theoretical modeling shining light on how the change of injection barriers, charge carrier mobility or trap density influence the current–voltage characteristics of the diodes and on how and which defects form in transparent conductive oxides used as anode

Electronic excitation induced defect dynamics in HfO2 based MOS devices investigated by in-situ electrical measurements

Science.gov (United States)

Manikanthababu, N.; Vajandar, S.; Arun, N.; Pathak, A. P.; Asokan, K.; Osipowicz, T.; Basu, T.; Nageswara Rao, S. V. S.

2018-03-01

In-situ I-V and C-V characterization studies were carried out to determine the device quality of atomic layer deposited HfO2 (2.7 nm)/SiO2 (0.6 nm)/Si-based metal oxide semiconductor devices during 120 MeV Ag ion irradiation. The influence of various tunneling mechanisms has been investigated by analyzing the I-V characteristics as a function of ion fluence. The nature of the defects created is tentatively identified by the determination of the significant tunneling processes. While the ion induced annealing of defects is observed at lower fluences, ion induced intermixing and radiation damage is found to be significant at higher fluences. The C-V characteristics also reveal significant changes at the interface and oxide trap densities: an increase in the oxide layer thickness occurs through the formation of an HfSiO interlayer. The interlayer is due to the swift heavy ion induced intermixing, which has been confirmed by X-TEM and X-ray photoelectron spectroscopy measurements.

Infrared characterization of some oxygen-related defects in Czochralski silicon

International Nuclear Information System (INIS)

Hallberg, T.

1993-01-01

This thesis is based on the work made at Linkoeping University at the Department of Physics and Measurement Technology. It is divided into two parts. The first part is a short introduction to defects in silicon, Fourier transform infrared spectroscopy as well as some physics involved in semiconductor crystals. The second part consists of two papers: Enhanced oxygen precipitation in electron irradiated silicon. Annealing of electron irradiated antimony-doped Czochralski silicon