Topotactic oxidative and reductive control of the structures and properties of layered manganese oxychalcogenides.

Science.gov (United States)

Hyett, Geoffrey; Barrier, Nicolas; Clarke, Simon J; Hadermann, Joke

2007-09-12

Topotactic modification, by both oxidation and reduction, of the composition, structures, and magnetic properties of the layered oxychalcogenides Sr4Mn3O7.5Cu2Ch2 (Ch=S, Se) is described. These Mn3+ compounds are composed of alternating perovskite-type strontium manganese oxide slabs separated by anti-fluorite-type copper chalcogenide layers and are intrinsically oxide deficient in the central layer of the perovskite slabs. The systems are unusual examples of perovskite-related compounds that may topotactically be both oxidized by fluorination and reduced by deintercalation of oxygen from the oxide-deficient part of the structure. The compounds exhibit antiferromagnetic ordering of the manganese magnetic moments in the outer layers of the perovskite slabs, while the other moments, in the central layers, exhibit spin-glass-like behavior. Fluorination has the effect of increasing the antiferromagnetic ordering temperature and the size of the ordered moment, whereas reduction destroys magnetic long-range order by introducing chemical disorder which leads to both further disorder and frustration of the magnetic interactions in the manganese oxide slab.

Transition of hydrated oxide layer for aluminum electrolytic capacitors

International Nuclear Information System (INIS)

Chi, Choong-Soo; Jeong, Yongsoo; Ahn, Hong-Joo; Lee, Jong-Ho; Kim, Jung-Gu; Lee, Jun-Hee; Jang, Kyung-Wook; Oh, Han-Jun

2007-01-01

A hydrous oxide film for the application as dielectric film is synthesized by immersion of pure aluminum in hot water. From a Rutherford backscattering analysis, the ratio of aluminum to oxygen atoms was found to be 3:2 in the anodized aluminum oxide film, and 2:1 in the hydrous oxide layer. Anodization of the hydrous oxide layer was more effective for the transition of amorphous anodic oxides to the crystalline aluminum oxides

Transmission electron microscopy characterization of Zircaloy-4 and ZIRLO™ oxide layers

International Nuclear Information System (INIS)

Gabory, Benoit de; Motta, Arthur T.; Wang, Ke

2015-01-01

Waterside corrosion of zirconium alloy nuclear fuel cladding varies markedly from one alloy to another. In addition, for a given alloy, the corrosion rate evolves during the corrosion process, most notably when the oxide loses its stability at the oxide transition. In an effort to understand the mechanism resulting in the variations of corrosion rate observed at the oxide transition, oxide layers formed on Zircaloy-4 and ZIRLO™ in high temperature water autoclave environments, and archived before and after the transition, are characterized using transmission electron microscopy. The study characterizes and compares the oxide morphology in both alloys at different times during the corrosion process, in an effort to understand the oxide growth mechanism for these alloys. Results show that the oxide is mainly composed of monoclinic ZrO 2 , with a preponderance of columnar oxide grains which extend to the oxide/metal interface. The oxide formed right after the transition has occurred, exhibits a 150 nm-wide layer of small equiaxed grains with high tetragonal oxide fraction. This layer has a similar morphology and structure as the first oxide layer formed (observed near the oxide/water interface). A study of the oxygen-rich region near the oxide/metal interface reveals a complex structure of different phases at different stages of corrosion. The interface exhibits an intermediate layer, identified as ZrO, a discontinuous layer of “blocky” Zr 3 O grains embedded in the ZrO layer, and a suboxide layer corresponding to an oxygen saturated solid solution in the metal matrix side. The thickness of this interfacial layer decreased markedly at the transition. Hydrides are also observed in that region, with a definite orientation relationship with the matrix. The observations of the oxide/metal interface are qualitatively similar for the two alloys but quantitatively different. The incorporation of intermetallic precipitates into the oxide layer is also studied, and

Considerably improved photovoltaic performance of carbon nanotube-based solar cells using metal oxide layers

Science.gov (United States)

Wang, Feijiu; Kozawa, Daichi; Miyauchi, Yuhei; Hiraoka, Kazushi; Mouri, Shinichiro; Ohno, Yutaka; Matsuda, Kazunari

2015-02-01

Carbon nanotube-based solar cells have been extensively studied from the perspective of potential application. Here we demonstrated a significant improvement of the carbon nanotube solar cells by the use of metal oxide layers for efficient carrier transport. The metal oxides also serve as an antireflection layer and an efficient carrier dopant, leading to a reduction in the loss of the incident solar light and an increase in the photocurrent, respectively. As a consequence, the photovoltaic performance of both p-single-walled carbon nanotube (SWNT)/n-Si and n-SWNT/p-Si heterojunction solar cells using MoOx and ZnO layers is improved, resulting in very high photovoltaic conversion efficiencies of 17.0 and 4.0%, respectively. These findings regarding the use of metal oxides as multifunctional layers suggest that metal oxide layers could improve the performance of various electronic devices based on carbon nanotubes.

Considerably improved photovoltaic performance of carbon nanotube-based solar cells using metal oxide layers.

Science.gov (United States)

Wang, Feijiu; Kozawa, Daichi; Miyauchi, Yuhei; Hiraoka, Kazushi; Mouri, Shinichiro; Ohno, Yutaka; Matsuda, Kazunari

2015-02-18

Carbon nanotube-based solar cells have been extensively studied from the perspective of potential application. Here we demonstrated a significant improvement of the carbon nanotube solar cells by the use of metal oxide layers for efficient carrier transport. The metal oxides also serve as an antireflection layer and an efficient carrier dopant, leading to a reduction in the loss of the incident solar light and an increase in the photocurrent, respectively. As a consequence, the photovoltaic performance of both p-single-walled carbon nanotube (SWNT)/n-Si and n-SWNT/p-Si heterojunction solar cells using MoOx and ZnO layers is improved, resulting in very high photovoltaic conversion efficiencies of 17.0 and 4.0%, respectively. These findings regarding the use of metal oxides as multifunctional layers suggest that metal oxide layers could improve the performance of various electronic devices based on carbon nanotubes.

Study on the influence of carbon monoxide to the surface oxide layer of uranium metal

International Nuclear Information System (INIS)

Wang Xiaolin; Duan Rongliang; Fu Yibei; Xie Renshou; Zuo Changming; Zhao Chunpei; Chen Hong

1997-01-01

The influence of carbon monoxide to the surface oxide layer of uranium metal has been studied by X-ray photoelectron spectroscopy (XPS) and gas chromatography (GC). Carbon monoxide adsorption on the oxide layer resulted in U4f peak shifting to the lower binding energy. The content of oxygen in the oxide is decreased and the atomic ratio (O/U) is decreased by 7.2%. The amount of carbon dioxide in the atmosphere after the surface reaction is increased by 11.0%. The investigation indicates that the surface layer can prevent the further oxidation uranium metal in the atmosphere of carbon monoxide

Cation Effects on the Layer Structure of Biogenic Mn-Oxides

Energy Technology Data Exchange (ETDEWEB)

Zhu, M.; Ginder-Vogel, M; Parikh, S; Feng, X; Sparks, D

2010-01-01

Biologically catalyzed Mn(II) oxidation produces biogenic Mn-oxides (BioMnO{sub x}) and may serve as one of the major formation pathways for layered Mn-oxides in soils and sediments. The structure of Mn octahedral layers in layered Mn-oxides controls its metal sequestration properties, photochemistry, oxidizing ability, and topotactic transformation to tunneled structures. This study investigates the impacts of cations (H{sup +}, Ni(II), Na{sup +}, and Ca{sup 2+}) during biotic Mn(II) oxidation on the structure of Mn octahedral layers of BioMnO{sub x} using solution chemistry and synchrotron X-ray techniques. Results demonstrate that Mn octahedral layer symmetry and composition are sensitive to previous cations during BioMnO{sub x} formation. Specifically, H{sup +} and Ni(II) enhance vacant site formation, whereas Na{sup +} and Ca{sup 2+} favor formation of Mn(III) and its ordered distribution in Mn octahedral layers. This study emphasizes the importance of the abiotic reaction between Mn(II) and BioMnO{sub x} and dependence of the crystal structure of BioMnO{sub x} on solution chemistry.

Flexible bactericidal graphene oxide-chitosan layers for stem cell proliferation

Science.gov (United States)

Mazaheri, M.; Akhavan, O.; Simchi, A.

2014-05-01

Graphene oxide (GO)-chitosan composite layers with stacked layer structures were synthesized using chemically exfoliated GO sheets (with lateral dimensions of ˜1 μm and thickness of ˜1 nm), and applied as antibacterial and flexible nanostructured templates for stem cell proliferation. By increasing the GO content from zero to 6 wt%, the strength and elastic modulus of the layers increased ˜80% and 45%, respectively. Similar to the chitosan layer, the GO-chitosan composite layers showed significant antibacterial activity (>77% inactivation after only 3 h) against Staphylococcus aureus bacteria. Surface density of the actin cytoskeleton fibers of human mesenchymal stem cells (hMSCs) cultured on the chitosan and GO(1.5 wt%)-chitosan composite layers was found nearly the same, while it significantly decreased by increasing the GO content to 3 and 6 wt%. Our results indicated that although a high concentration of GO in the chitosan layer (here, 6 wt%) could decelerate the proliferation of the hMSCs on the flexible layer, a low concentration of GO (i.e., 1.5 wt%) not only resulted in biocompatibility but also kept the mechanical flexibility of the self-sterilized layers for high proliferation of hMSCs.

Formation and effect of orientation domains in layered oxide cathodes of lithium-ion batteries

International Nuclear Information System (INIS)

Jarvis, Karalee A.; Wang, Chih-Chieh; Knight, James C.; Rabenberg, Lew; Manthiram, Arumugam; Ferreira, Paulo J.

2016-01-01

We show that in layered oxides that are employed as cathodes in lithium-ion batteries, the cation layers can order on different {111} NaCl planes within a single particle, which makes the lithium layer discontinuous across a particle. The findings challenge previous assertions that lithium undergoes 2-D diffusion in layered oxides and the data provide new insights into the decrease in rate capabilities for some layered oxides. Therefore, it is critically important to understand how these discontinuities form and how the loss of 2-D diffusion impacts the overall performance of the layered oxide cathode materials. Employing X-ray diffraction (XRD) and aberration-corrected scanning transmission electron microscopy (STEM), we find that as the material transitions from a disordered to an ordered state, it forms four orientation variants corresponding to the four {111} NaCl planes. This transition is not intrinsic to all layered oxides and appears to be more strongly affected by nickel. Furthermore, with energy dispersive spectroscopy (EDS), we show that there is an increase in the nickel concentration at the interface between each orientation variant. This reduces the rate of lithium diffusion, negatively affects the rate capability, and could be contributing to the overall capacity fade.

Role of atomic layer deposited aluminum oxide as oxidation barrier for silicon based materials

Energy Technology Data Exchange (ETDEWEB)

Fiorentino, Giuseppe, E-mail: g.fiorentino@tudelft.nl; Morana, Bruno [Department of Microelectronic, Delft University of Technology, Feldmannweg 17, 2628 CT Delft (Netherlands); Forte, Salvatore [Department of Electronic, University of Naples Federico II, Piazzale Tecchio, 80125 Napoli (Italy); Sarro, Pasqualina Maria [Department of Microelectronic, Delft University of Technology, Feldmannweg 17, 2628 CT, Delft (Netherlands)

2015-01-15

In this paper, the authors study the protective effect against oxidation of a thin layer of atomic layer deposited (ALD) aluminum oxide (Al{sub 2}O{sub 3}). Nitrogen doped silicon carbide (poly-SiC:N) based microheaters coated with ALD Al{sub 2}O{sub 3} are used as test structure to investigate the barrier effect of the alumina layers to oxygen and water vapor at very high temperature (up to 1000 °C). Different device sets have been fabricated changing the doping levels, to evaluate possible interaction between the dopants and the alumina layer. The as-deposited alumina layer morphology has been evaluated by means of AFM analysis and compared to an annealed sample (8 h at 1000 °C) to estimate the change in the grain structure and the film density. The coated microheaters are subjected to very long oxidation time in dry and wet environment (up to 8 h at 900 and 1000 °C). By evaluating the electrical resistance variation between uncoated reference devices and the ALD coated devices, the oxide growth on the SiC is estimated. The results show that the ALD alumina coating completely prevents the oxidation of the SiC up to 900 °C in wet environment, while an oxide thickness reduction of 50% is observed at 1000 °C compared to uncoated devices.

Electron molecular beam epitaxy: Layer-by-layer growth of complex oxides via pulsed electron-beam deposition

International Nuclear Information System (INIS)

Comes, Ryan; Liu Hongxue; Lu Jiwei; Gu, Man; Khokhlov, Mikhail; Wolf, Stuart A.

2013-01-01

Complex oxide epitaxial film growth is a rich and exciting field, owing to the wide variety of physical properties present in oxides. These properties include ferroelectricity, ferromagnetism, spin-polarization, and a variety of other correlated phenomena. Traditionally, high quality epitaxial oxide films have been grown via oxide molecular beam epitaxy or pulsed laser deposition. Here, we present the growth of high quality epitaxial films using an alternative approach, the pulsed electron-beam deposition technique. We demonstrate all three epitaxial growth modes in different oxide systems: Frank-van der Merwe (layer-by-layer); Stranski-Krastanov (layer-then-island); and Volmer-Weber (island). Analysis of film quality and morphology is presented and techniques to optimize the morphology of films are discussed.

Increasing the radiation resistance of single-crystal silicon epitaxial layers

Directory of Open Access Journals (Sweden)

Kurmashev Sh. D.

2014-12-01

Full Text Available The authors investigate the possibility of increasing the radiation resistance of silicon epitaxial layers by creating radiation defects sinks in the form of dislocation networks of the density of 109—1012 m–2. Such networks are created before the epitaxial layer is applied on the front surface of the silicon substrate by its preliminary oxidation and subsequent etching of the oxide layer. The substrates were silicon wafers KEF-4.5 and KDB-10 with a diameter of about 40 mm, grown by the Czochralski method. Irradiation of the samples was carried out using electron linear accelerator "Electronics" (ЭЛУ-4. Energy of the particles was 2,3—3,0 MeV, radiation dose 1015—1020 m–2, electron beam current 2 mA/m2. It is shown that in structures containing dislocation networks, irradiation results in reduction of the reverse currents by 5—8 times and of the density of defects by 5—10 times, while the mobility of the charge carriers is increased by 1,2 times. Wafer yield for operation under radiation exposure, when the semiconductor structures are formed in the optimal mode, is increased by 7—10% compared to the structures without dislocation networks. The results obtained can be used in manufacturing technology for radiation-resistant integrated circuits (bipolar, CMOS, BiCMOS, etc..

Tuning inner-layer oxygen functional groups of reduced graphene oxide by potentiostatic oxidation for high performance electrochemical energy storage devices

International Nuclear Information System (INIS)

Wang, Huixin; Feng, Bingmei; Ye, Yifan; Guo, Jinghua; Fang, Hai-Tao

2017-01-01

Graphical abstract: Tuning inner-layer oxygen functional groups of reduced graphene oxide by potentiostatic oxidation in carbonate-based electrolyte improves the electrochemical performance. - Abstract: The electrochemical lithiation/delithiation of oxygen-containing functional groups (OCFGs) of nanocarbon materials, particularly graphene, have attracted intensive interest in recent years. Here, we propose a controllable potentiostatic oxidation approach to tune the OCFGs of as-prepared reduced graphene oxide (rGO) in a carbonate-based electrolyte to improve the specific capacity and rate capability. By X-Ray absorption spectroscopy in total fluorescence yield mode and X-Ray diffraction, we confirm that potentiostatic oxidations generate new OCFGs in the inner-layer of rGO. The content of OCFGs increases as oxidation potential being elevated. Such increasing of OCFGs in quantity significantly enhances the capacity. For instance, the specific capacity of 170.4 mAh g −1 for pristine rGO electrode is increased to 290.5 mAh g −1 after the oxidation at 5.0 V. We demonstrate that oxidations at moderate potentials can reduce the electrochemical and ohmic polarizations of rGO electrodes without deteriorating diffusion dynamic, thereby improving rate capability. After the optimal oxidation at 4.7 V, rGO electrode exhibits an excellent rate capability, delivering 58.4 mAh g −1 at 20 A g −1 .

The magnetic characteristics of perpendicular magnetic tunnel junction with MgO and Al-O oxidation layers in various thickness

International Nuclear Information System (INIS)

Chen, T.-J.; Canizo-Cabrera, A.; Chang, C.-H.; Liao, K.-A.; Li, Simon C.; Hou, C.-K.; Wu Teho

2006-01-01

In this work we show the magnetic characteristics of perpendicular magnetic tunnel junction (pMTJ) with different oxidation layers. The pMTJs structures were made by RF and DC magnetron sputtering. Individual depositions of magnesium oxide layers and of aluminum oxide films were prepared by plasma oxidation. The experimental results showed that the initial switching field was decreased as the magnesium oxide thickness was increased. Further work of the aluminum oxide surface roughness and hysteresis loop influenced by different oxidation layers on pMTJs structures will be discussed as well

Light-emitting diodes based on solution-processed nontoxic quantum dots: oxides as carrier-transport layers and introducing molybdenum oxide nanoparticles as a hole-inject layer.

Science.gov (United States)

Bhaumik, Saikat; Pal, Amlan J

2014-07-23

We report fabrication and characterization of solution-processed quantum dot light-emitting diodes (QDLEDs) based on a layer of nontoxic and Earth-abundant zinc-diffused silver indium disulfide (AIZS) nanoparticles as an emitting material. In the QDLEDs fabricated on indium tin oxide (ITO)-coated glass substrates, we use layers of oxides, such as graphene oxide (GO) and zinc oxide (ZnO) nanoparticles as a hole- and electron-transport layer, respectively. In addition, we introduce a layer of MoO3 nanoparticles as a hole-inject one. We report a comparison of the characteristics of different device architectures. We show that an inverted device architecture, ITO/ZnO/AIZS/GO/MoO3/Al, yields a higher electroluminescence (EL) emission, compared to direct ones, for three reasons: (1) the GO/MoO3 layers introduce barriers for electrons to reach the Al electrode, and, similarly, the ZnO layers acts as a barrier for holes to travel to the ITO electrode; (2) the introduction of a layer of MoO3 nanoparticles as a hole-inject layer reduces the barrier height for holes and thereby balances charge injection in the inverted structure; and (3) the wide-bandgap zinc oxide next to the ITO electrode does not absorb the EL emission during its exit from the device. In the QDLEDs with oxides as carrier inject and transport layers, the EL spectrum resembles the photoluminescence emission of the emitting material (AIZS), implying that excitons are formed in the quaternary nanocrystals and decay radiatively.

Insulating gallium oxide layer produced by thermal oxidation of gallium-polar GaN: Insulating gallium oxide layer produced by thermal oxidation of gallium-polar GaN

Energy Technology Data Exchange (ETDEWEB)

Hossain, T. [Kansas State Univ., Manhattan, KS (United States); Wei, D. [Kansas State Univ., Manhattan, KS (United States); Nepal, N. [Naval Research Lab. (NRL), Washington, DC (United States); Garces, N. Y. [Naval Research Lab. (NRL), Washington, DC (United States); Hite, J. K. [Naval Research Lab. (NRL), Washington, DC (United States); Meyer, H. M. [Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States); Eddy, C. R. [Naval Research Lab. (NRL), Washington, DC (United States); Baker, Troy [Nitride Solutions, Wichita, KS (United States); Mayo, Ashley [Nitride Solutions, Wichita, KS (United States); Schmitt, Jason [Nitride Solutions, Wichita, KS (United States); Edgar, J. H. [Kansas State Univ., Manhattan, KS (United States)

2014-02-24

We report the benefits of dry oxidation of n -GaN for the fabrication of metal-oxide-semiconductor structures. GaN thin films grown on sapphire by MOCVD were thermally oxidized for 30, 45 and 60 minutes in a pure oxygen atmosphere at 850 °C to produce thin, smooth GaO_x layers. Moreover, the GaN sample oxidized for 30 minutes had the best properties. Its surface roughness (0.595 nm) as measured by atomic force microscopy (AFM) was the lowest. Capacitance-voltage measurements showed it had the best saturation in accumulation region and the sharpest transition from accumulation to depletion regions. Under gate voltage sweep, capacitance-voltage hysteresis was completely absent. The interface trap density was minimum (D_it = 2.75×10¹⁰ cm^–2eV^–1) for sample oxidized for 30 mins. These results demonstrate a high quality GaO_x layer is beneficial for GaN MOSFETs.

Secondary electron emission influenced by oxidation on the aluminum surface: the roles of the chemisorbed oxygen and the oxide layer

Science.gov (United States)

Li, Jiangtao; Hoekstra, Bart; Wang, Zhen-Bin; Qiu, Jie; Pu, Yi-Kang

2018-04-01

A relationship between the apparent secondary electron yield ({γ }{{se}}) and the oxygen coverage/oxide layer thickness on an aluminum cathode is obtained in an experiment under a controlled environment. The apparent secondary electron yield ({γ }{{se}}) is deduced from the breakdown voltage between two parallel plate electrodes in a 360 mTorr argon environment using a simple Townsend breakdown model with the assumption that the variation of the apparent secondary electron yield is dominated by the variation of the argon ion induced processes. The oxygen coverage/oxide layer thickness on the aluminum cathode is measured by a semi in situ x-ray photoemission spectroscopy equipment which is directly attached to the discharge chamber. It is found that three phases exist: (1) in the monomonolayer regime, as the oxygen coverage increases from 0 to 0.3, {γ }{{se}} decreases by nearly 40 % , (2) as the oxygen coverage increases from 0.3 to 1, {γ }{{se}} keeps nearly constant, (3) as the oxide layer thickness increases from about 0.3 nm to about 1.1 nm, {γ }{{se}} increases by 150 % . We propose that, in the submonolayer regime, the chemisorbed oxygen on the aluminum surface causes the decrease of {γ }{{se}} by creating a local potential barrier, which reduces the Auger neutralization rate and the energy gained by the Auger electrons. In the multilayer regime, as the oxide layer grows in thickness, there are three proposed mechanisms which cause the increase of {γ }{{se}}: (1) the work function decreases; (2) resonance neutralization and Auger de-excitation may exist. This is served as another channel for secondary electron production; (3) the kinetic energy of Auger electrons is increased on average, leading to a higher probability for electrons to overcome the surface potential barrier.

Fabrication of oxide layer on zirconium by micro-arc oxidation: Structural and antimicrobial characteristics

International Nuclear Information System (INIS)

Fidan, S.; Muhaffel, F.; Riool, M.; Cempura, G.; Boer, L. de; Zaat, S.A.J.; Filemonowicz, A. Czyrska -; Cimenoglu, H.

2017-01-01

The aim of this study was to cover the surfaces of zirconium (Zr) with an antimicrobial layer for biomedical applications. For this purpose, the micro-arc oxidation (MAO) process was employed in a sodium silicate and sodium hydroxide containing base electrolyte with and without addition of silver acetate (AgC 2 H 3 O 2 ). In general, synthesized MAO layers were composed of zirconium oxide (ZrO 2 ) and zircon (ZrSiO 4 ). Addition of AgC 2 H 3 O 2 into the base electrolyte caused homogenous precipitation of silver-containing particles in the MAO layer, which exhibited excellent antibacterial efficiency against methicillin-resistant Staphylococcus aureus (MRSA) as compared to the untreated and MAO-treated Zr. - Highlights: • Micro-arc oxidation process was applied on zirconium in an electrolyte containing silver acetate. • Silver incorporated in the oxide layer in the form of nanoparticles. • 0.45 wt.% silver incorporation provided excellent antibacterial activity.

Fabrication of oxide layer on zirconium by micro-arc oxidation: Structural and antimicrobial characteristics

Energy Technology Data Exchange (ETDEWEB)

Fidan, S.; Muhaffel, F. [Department of Metallurgical and Materials Engineering, Istanbul Technical University, Sariyer, 34469 Istanbul (Turkey); Riool, M. [Department of Medical Microbiology, Center for Infection and Immunity Amsterdam (CINIMA), Academic Medical Center, University of Amsterdam, Meibergdreef 15, 1105, AZ, Amsterdam (Netherlands); Cempura, G. [International Centre of Electron Microscopy for Materials Science, AGH University of Science and Technology, PL, 30-059 Kraków (Poland); Boer, L. de; Zaat, S.A.J. [Department of Medical Microbiology, Center for Infection and Immunity Amsterdam (CINIMA), Academic Medical Center, University of Amsterdam, Meibergdreef 15, 1105, AZ, Amsterdam (Netherlands); Filemonowicz, A. Czyrska - [International Centre of Electron Microscopy for Materials Science, AGH University of Science and Technology, PL, 30-059 Kraków (Poland); Cimenoglu, H., E-mail: cimenogluh@itu.edu.tr [Department of Metallurgical and Materials Engineering, Istanbul Technical University, Sariyer, 34469 Istanbul (Turkey)

2017-02-01

The aim of this study was to cover the surfaces of zirconium (Zr) with an antimicrobial layer for biomedical applications. For this purpose, the micro-arc oxidation (MAO) process was employed in a sodium silicate and sodium hydroxide containing base electrolyte with and without addition of silver acetate (AgC{sub 2}H{sub 3}O{sub 2}). In general, synthesized MAO layers were composed of zirconium oxide (ZrO{sub 2}) and zircon (ZrSiO{sub 4}). Addition of AgC{sub 2}H{sub 3}O{sub 2} into the base electrolyte caused homogenous precipitation of silver-containing particles in the MAO layer, which exhibited excellent antibacterial efficiency against methicillin-resistant Staphylococcus aureus (MRSA) as compared to the untreated and MAO-treated Zr. - Highlights: • Micro-arc oxidation process was applied on zirconium in an electrolyte containing silver acetate. • Silver incorporated in the oxide layer in the form of nanoparticles. • 0.45 wt.% silver incorporation provided excellent antibacterial activity.

Interfacial reactions between indium tin oxide and triphenylamine tetramer layers induced by photoirradiation

International Nuclear Information System (INIS)

Satoh, Toshikazu; Fujikawa, Hisayoshi; Yamamoto, Ichiro; Murasaki, Takanori; Kato, Yoshifumi

2008-01-01

The effects of photoirradiation on the interfacial chemical reactions between indium tin oxide (ITO) films and layers of triphenylamine tetramer (TPTE) were investigated by using in situ x-ray photoelectron spectroscopy (XPS). Thin TPTE layers deposited onto sputter-deposited ITO films were irradiated with violet light-emitting diodes (peak wavelength: 380 nm). Shifts in the peak positions of spectral components that originated in the organic layer toward the higher binding-energy side were observed in the XPS profiles during the early stages of irradiation. No further peak shifts were observed after additional irradiation. An increase in the ratio of the organic component in the O 1s spectra was also observed during the photoirradiation. The ratio of the organic component increased in proportion to the cube root of the irradiation time. These results suggest that photoirradiation induces an increase in the height of the carrier injection barrier at the interface between TPTE and ITO in the early stages of the irradiation, possibly due to the rapid diffusion controlled formation and growth of an oxidized TPTE layer, which is considered to act as a high resistance layer

Oxide layer stability in lead-bismuth at high temperature

Science.gov (United States)

Martín, F. J.; Soler, L.; Hernández, F.; Gómez-Briceño, D.

2004-11-01

Materials protection by 'in situ' oxidation has been studied in stagnant lead-bismuth, with different oxygen levels (H 2/H 2O ratios of 0.3 and 0.03), at temperatures from 535 °C to 600 °C and times from 100 to 3000 h. The materials tested were the martensitic steels F82Hmod, EM10 and T91 and the austenitic stainless steels, AISI 316L and AISI 304L. The results obtained point to the existence of an apparent threshold temperature above which corrosion occurs and the formation of a protective and stable oxide layer is not possible. This threshold temperature depends on material composition, oxygen concentration in the liquid lead-bismuth and time. The threshold temperature is higher for the austenitic steels, especially for the AISI 304L, and it increases with the oxygen concentration in the lead-bismuth. The oxide layer formed disappear with time and, after 3000 h all the materials, except AISI 304L, suffer corrosion, more severe for the martensitic steels and at the highest temperature tested.

Electrochemical Corrosion Behavior of Oxidation Layer on Fe30Mn5Al Alloy

Directory of Open Access Journals (Sweden)

ZHU Xue-mei

2017-08-01

Full Text Available The Fe30Mn5Al alloy was oxidized at 800℃ in air for 160h, the oxidation-induced layer about 15μm thick near the scale-metal interface was induced to transform to ferrite and become enriched in Fe and depletion in Mn. The effect of the oxidation-induced Mn depletion layer on the electrochemical corrosion behavior of Fe30Mn5Al alloy was evaluated. The results show that in 1mol·L-1 Na2SO4 solution, the anodic polarization curve of the Mn depletion layer exhibits self-passivation, compared with Fe30Mn5Al austenitic alloy, and the corrosion potential Evs SCE is increased to -130mV from -750mV and the passive current density ip is decreased to 29μA/cm2 from 310μA/cm2. The electrochemical impedance spectroscopy(EIS of the Mn depletion layer has the larger diameter of capacitive arc, the higher impedance modulus|Z|, and the wider phase degree range, and the fitted polarization resistant Rt is increased to 9.9kΩ·cm2 from 2.7kΩ·cm2 by using an equivalent electric circuit of Rs-(Rt//CPE. The high insulation of the Mn depletion layer leads to an improved corrosion resistance of Fe30Mn5Al austenitic alloy.

Interface Controlled Oxidation States in Layered Cobalt Oxide Nanoislands on Gold

DEFF Research Database (Denmark)

Walton, Alexander; Fester, Jakob; Bajdich, Michal

2015-01-01

Layered cobalt oxides have been shown to be highly active catalysts for the oxygen evolution reaction (OER; half of the catalytic “water splitting” reaction), particularly when promoted with gold. However, the surface chemistry of cobalt oxides and in particular the nature of the synergistic effect...

Bulk-heterojunction organic solar cells sandwiched by solution processed molybdenum oxide and titania nanosheet layers

Science.gov (United States)

Itoh, Eiji; Goto, Yoshinori; Fukuda, Katsutoshi

2014-02-01

The contributions of ultrathin titania nanosheet (TN) crystallites were studied in both an inverted bulk-heterojunction (BHJ) cell in an indium-tin oxide (ITO)/titania nanosheet (TN)/poly(3-hexylthiophene) (P3HT):phenyl-C61-butyric acid methylester (PCBM) active layer/MoOx/Ag multilayered photovoltaic device and a conventional BHJ cell in ITO/MoOx/P3HT:PCBM active layer/TN/Al multilayered photovoltaic device. The insertion of only one or two layers of poly(diallyldimethylammonium chloride) (PDDA) and TN multilayered film prepared by the layer-by-layer deposition technique effectively decreased the leakage current and increased the open circuit voltage (VOC), fill factor (FF), and power conversion efficiency (η). The conventional cell sandwiched between a solution-processed, partially crystallized molybdenum oxide hole-extracting buffer layer and a TN electron extracting buffer layer showed comparable cell performance to a device sandwiched between vacuum-deposited molybdenum oxide and TN layers, whereas the inverted cell with solution-processed molybdenum oxide showed a poorer performance probably owing to the increment in the leakage current across the film. The abnormal S-shaped curves observed in the inverted BHJ cell above VOC disappeared with the use of a polyfluorene-based cationic semiconducting polymer as a substitute for an insulating PDDA film, resulting in the improved cell performance.

Growth of micrometric oxide layers to explore laser decontamination of metallic surfaces

Directory of Open Access Journals (Sweden)

Carvalho Luisa

2017-01-01

Full Text Available The nuclear industry produces a wide range of radioactive waste in terms of hazard level, contaminants and material. For metallic equipment like steam generators, the radioactivity is mainly located in the oxide surface. In order to study and develop safe techniques for dismantling and for decontamination, it is important to have access to oxide layers with a representative distribution of non-radioactive contaminants. In this paper we propose a method for the creation of oxide layers on stainless steel 304L with europium (Eu as contaminant. This technique consists in spraying an Eu-solution on stainless steel samples. The specimens are firstly treated with a pulsed nanosecond laser after which the steel samples are placed in a 873 K furnace for various durations in order to grow an oxide layer. The oxide structure and in-depth distribution of Eu in the oxide layer were analyzed by scanning electron microscopy coupled to an energy-dispersive X-ray microanalyzer, as well as by glow discharge optical emission or mass spectrometry. The oxide layers were grown to thicknesses in the range of 200 nm–4.5 μm depending on the laser treatment parameters and the heating duration. These contaminated oxides had a ‘duplex structure’ with a mean concentration of the order of 6 × 1016 atoms/cm2 (15 μg/cm2 of europium in the volume of the oxide layer. It appears that europium implementation prevented the oxide growth in the furnace. Nevertheless, the presence of the contamination had no impact on the thickness of the oxide layers obtained by preliminary laser treatment. These oxide layers were used to study the decontamination of metallic surfaces such as stainless steel 304L using a nanosecond pulsed laser.

Controlling the interface charge density in GaN-based metal-oxide-semiconductor heterostructures by plasma oxidation of metal layers

International Nuclear Information System (INIS)

Hahn, Herwig; Kalisch, Holger; Vescan, Andrei; Pécz, Béla; Kovács, András; Heuken, Michael

2015-01-01

In recent years, investigating and engineering the oxide-semiconductor interface in GaN-based devices has come into focus. This has been driven by a large effort to increase the gate robustness and to obtain enhancement mode transistors. Since it has been shown that deep interface states act as fixed interface charge in the typical transistor operating regime, it appears desirable to intentionally incorporate negative interface charge, and thus, to allow for a positive shift in threshold voltage of transistors to realise enhancement mode behaviour. A rather new approach to obtain such negative charge is the plasma-oxidation of thin metal layers. In this study, we present transmission electron microscopy and energy dispersive X-ray spectroscopy analysis as well as electrical data for Al-, Ti-, and Zr-based thin oxide films on a GaN-based heterostructure. It is shown that the plasma-oxidised layers have a polycrystalline morphology. An interfacial amorphous oxide layer is only detectable in the case of Zr. In addition, all films exhibit net negative charge with varying densities. The Zr layer is providing a negative interface charge density of more than 1 × 10 13  cm –2 allowing to considerably shift the threshold voltage to more positive values

Investigation of anodizing parameter effect on barrier layer of anodic zirconium oxide

International Nuclear Information System (INIS)

Kharchenko, Eh.P.

1979-01-01

Effect of fluoride concentration and forming direction upon kinetics of barrier layer transformations in the process of preparation of phase anodic zirconium oxide in acid fluorine-containing solutions is considered. Suppositions are made on the mechanism of barrier layer transformation under the effect of the parameters mentioned. The thickness of the barrier layer is determined by two methods and it is shown that coefficient of the layer thickess growth at the voltage increase by 1 V is much lower than during formation of the barrier films in non-agressive electrolytes

Characterization of SCC crack tips and surface oxide layers in alloy 600

Energy Technology Data Exchange (ETDEWEB)

Fujii, Katsuhiko; Fukuya, Koji [Inst. of Nuclear Safety System Inc., Mihama, Fukui (Japan)

2002-09-01

In order to investigate the mechanism of primary water stress corrosion cracking (SCC), direct observation of microstructures of SCC crack tips and surface oxide layers in alloy 600 were carried out. A focused-ion beam (FIB) micro-processing technique was applied to prepare electron transparent foils including the crack tip and the surface oxide layer without any damage to those microstructures. Transmission electron microscopy and analysis were used to characterize the crack tips and surface oxide layers. Cr-rich oxides and a metal-Ni phase were identified in the crack tips and grain boundaries ahead of the crack tips independent of dissolved hydrogen concentrations. >From the fact that the Cr-rich oxides and metal-Ni phase were observed in the inner surface oxide layer, the same oxidation mechanism as the surface is proposed for the crack tip region and internal oxidation accompanying selective Cr oxidation is suggested as the mechanism. (author)

W-containing oxide layers obtained on aluminum and titanium by PEO as catalysts in thiophene oxidation

Science.gov (United States)

Rudnev, V. S.; Lukiyanchuk, I. V.; Vasilyeva, M. S.; Morozova, V. P.; Zelikman, V. M.; Tarkhanova, I. G.

2017-11-01

W-containing oxide layers fabricated on titanium and aluminum alloys by Plasma electrolytic oxidation (PEO) have been tested in the reaction of the peroxide oxidation of thiophene. Samples with two types of coatings have been investigated. Coatings I contained tungsten oxide in the matrix and on the surface of amorphous silica-titania or silica-alumina layers, while coatings II comprised crystalline WO3 and/or Al2(WO4)3. Aluminum-supported catalyst containing a smallest amount of transition metals in the form of tungsten oxides and manganese oxides in low oxidation levels showed high activity and stability.

Solid oxide fuel cells with bi-layered electrolyte structure

Energy Technology Data Exchange (ETDEWEB)

Zhang, Xinge; Robertson, Mark; Deces-Petit, Cyrille; Xie, Yongsong; Hui, Rob; Qu, Wei; Kesler, Olivera; Maric, Radenka; Ghosh, Dave [Institute for Fuel Cell Innovation, National Research Council Canada, 4250 Wesbrook Mall, Vancouver, B.C. V6T 1W5 (Canada)

2008-01-10

In this work, we have developed solid oxide fuel cells with a bi-layered electrolyte of 2 {mu}m SSZ and 4 {mu}m SDC using tape casting, screen printing, and co-firing processes. The cell reached power densities of 0.54 W cm{sup -2} at 650 C and 0.85 W cm{sup -2} at 700 C, with open circuit voltage (OCV) values larger than 1.02 V. The electrical leaking between anode and cathode through an SDC electrolyte has been blocked in the bi-layered electrolyte structure. However, both the electrolyte resistance (R{sub el}) and electrode polarization resistance (R{sub p,a+c}) increased in comparison to cells with single-layered SDC electrolytes. The formation of a solid solution of (Ce, Zr)O{sub 2-x} during sintering process and the flaws in the bi-layered electrolyte structure seem to be the main causes for the increase in the R{sub el} value (0.32 {omega} cm{sup 2}) at 650 C, which is almost one order of magnitude higher than the calculated value. (author)

Impedance Characterization of the Capacitive field-Effect pH-Sensor Based on a thin-Layer Hafnium Oxide Formed by Atomic Layer Deposition

Directory of Open Access Journals (Sweden)

Michael LEE

2014-05-01

Full Text Available As a sensing element, silicon dioxide (SiO2 has been applied within ion-sensitive field effect transistors (ISFET. However, a requirement of increasing pH-sensitivity and stability has observed an increased number of insulating materials that obtain high-k gate being applied as FETs. The increased high-k gate reduces the required metal oxide layer and, thus, the fabrication of thin hafnium oxide (HfO2 layers by atomic layer deposition (ALD has grown with interest in recent years. This metal oxide presents advantageous characteristics that can be beneficial for the advancements within miniaturization of complementary metal oxide semiconductor (CMOS technology. In this article, we describe a process for fabrication of HfO2 based on ALD by applying water (H2O as the oxygen precursor. As a first, electrochemical impedance spectroscopy (EIS measurements were performed with varying pH (2-10 to demonstrate the sensitivity of HfO2 as a potential pH sensing material. The Nyquist plot demonstrates a high clear shift of the polarization resistance (Rp between pH 6-10 (R2 = 0.9986, Y = 3,054X + 12,100. At acidic conditions (between pH 2-10, the Rp change was small due to the unmodified oxide gate (R2 = 0.9655, Y = 2,104X + 4,250. These preliminary results demonstrate the HfO2 substrate functioned within basic to neutral conditions and establishes a great potential for applying HfO2 as a dielectric material for future pH measuring FET sensors.

Low Temperature Processed Complementary Metal Oxide Semiconductor (CMOS) Device by Oxidation Effect from Capping Layer

KAUST Repository

Wang, Zhenwei

2015-04-20

In this report, both p- and n-type tin oxide thin-film transistors (TFTs) were simultaneously achieved using single-step deposition of the tin oxide channel layer. The tuning of charge carrier polarity in the tin oxide channel is achieved by selectively depositing a copper oxide capping layer on top of tin oxide, which serves as an oxygen source, providing additional oxygen to form an n-type tin dioxide phase. The oxidation process can be realized by annealing at temperature as low as 190°C in air, which is significantly lower than the temperature generally required to form tin dioxide. Based on this approach, CMOS inverters based entirely on tin oxide TFTs were fabricated. Our method provides a solution to lower the process temperature for tin dioxide phase, which facilitates the application of this transparent oxide semiconductor in emerging electronic devices field.

Mass transfer model for two-layer TBP oxidation reactions: Revision 1

International Nuclear Information System (INIS)

Laurinat, J.E.

1994-01-01

To prove that two-layer, TBP-nitric acid mixtures can be safely stored in the Canyon evaporators, it must be demonstrated that a runaway reaction between TBP and nitric acid will not occur. Previous bench-scale experiments showed that, at typical evaporator temperatures, this reaction is endothermic and therefore cannot run away, due to the loss of heat from evaporation of water in the organic layer. However, the reaction would be exothermic and could run away if the small amount of water in the organic layer evaporates before the nitric acid in this layer is consumed by the reaction. Provided that there is enough water in the aqueous layer, this would occur if the organic layer is sufficiently thick so that the rate of loss of water by evaporation exceeds the rate of replenishment due to mixing with the aqueous layer. Bubbles containing reaction products enhance the rate of transfer of water from the aqueous layer to the organic layer. These bubbles are generated by the oxidation of TBP and its reaction products in the organic layer and by the oxidation of butanol in the aqueous layer. Butanol is formed by the hydrolysis of TBP in the organic layer. For aqueous-layer bubbling to occur, butanol must transfer into the aqueous layer. Consequently, the rate of oxidation and bubble generation in the aqueous layer strongly depends on the rate of transfer of butanol from the organic to the aqueous layer. This report presents measurements of mass transfer rates for the mixing of water and butanol in two-layer, TBP-aqueous mixtures, where the top layer is primarily TBP and the bottom layer is comprised of water or aqueous salt solution. Mass transfer coefficients are derived for use in the modeling of two-layer TBP-nitric acid oxidation experiments

Nanoscale gadolinium oxide capping layers on compositionally variant gate dielectrics

KAUST Repository

Alshareef, Husam N.

2010-11-19

Metal gate work function enhancement using nanoscale (1.0 nm) Gd2O3 interfacial layers has been evaluated as a function of silicon oxide content in the HfxSiyOz gate dielectric and process thermal budget. It is found that the effective work function tuning by the Gd2O3 capping layer varied by nearly 400 mV as the composition of the underlying dielectric changed from 0% to 100% SiO2, and by nearly 300 mV as the maximum process temperature increased from ambient to 1000 °C. A qualitative model is proposed to explain these results, expanding the existing models for the lanthanide capping layer effect.

Nanoscale gadolinium oxide capping layers on compositionally variant gate dielectrics

KAUST Repository

Alshareef, Husam N.; Caraveo-Frescas, J. A.; Cha, D. K.

2010-01-01

Metal gate work function enhancement using nanoscale (1.0 nm) Gd2O3 interfacial layers has been evaluated as a function of silicon oxide content in the HfxSiyOz gate dielectric and process thermal budget. It is found that the effective work function tuning by the Gd2O3 capping layer varied by nearly 400 mV as the composition of the underlying dielectric changed from 0% to 100% SiO2, and by nearly 300 mV as the maximum process temperature increased from ambient to 1000 °C. A qualitative model is proposed to explain these results, expanding the existing models for the lanthanide capping layer effect.

Ultrathin Oxide Passivation Layer by Rapid Thermal Oxidation for the Silicon Heterojunction Solar Cell Applications

OpenAIRE

Lee, Youngseok; Oh, Woongkyo; Dao, Vinh Ai; Hussain, Shahzada Qamar; Yi, Junsin

2012-01-01

It is difficult to deposit extremely thin a-Si:H layer in heterojunction with intrinsic thin layer (HIT) solar cell due to thermal damage and tough process control. This study aims to understand oxide passivation mechanism of silicon surface using rapid thermal oxidation (RTO) process by examining surface effective lifetime and surface recombination velocity. The presence of thin insulating a-Si:H layer is the key to get high Voc by lowering the leakage current (I0) which improves the efficie...

Characterization of Zircaloy-4 oxide layers by impedance spectroscopy

International Nuclear Information System (INIS)

Barberis, P.

1999-01-01

Two Zircaloy-4 type alloys with different tin contents (0.5 and 1.2 wt%) have been oxidized in autoclave (400 C in steam) for several durations (1-140 days). The film has been characterized by electrochemical impedance spectroscopy (EIS). Several soaking times have been investigated (up to 40 days). The Cole-Cole representation has been used to display and study the data. A simple electrical model has been derived from the observed spectra: the electrical circuit includes two RC loops in series, whose capacitances are frequency dispersed. It is thoroughly related to the layer structure. It has been shown that even before the kinetic transition, the film is constituted of three parts: an inner layer which is compact, an outer layer subdivided in an external region immediately soaked by the electrolyte, and an internal one in which electrolyte diffusion processes can take place. The kinetic transition is interpreted in terms of an abrupt 'compacity' change, both layers degrading at this point. The alloy with high tin content exhibits higher dispersive properties of the oxide layer formed on it, in correlation with its faster oxidation kinetics. (orig.)

Partially oxidized atomic cobalt layers for carbon dioxide electroreduction to liquid fuel

Science.gov (United States)

Gao, Shan; Lin, Yue; Jiao, Xingchen; Sun, Yongfu; Luo, Qiquan; Zhang, Wenhua; Li, Dianqi; Yang, Jinlong; Xie, Yi

2016-01-01

Electroreduction of CO2 into useful fuels, especially if driven by renewable energy, represents a potentially ‘clean’ strategy for replacing fossil feedstocks and dealing with increasing CO2 emissions and their adverse effects on climate. The critical bottleneck lies in activating CO2 into the CO2•- radical anion or other intermediates that can be converted further, as the activation usually requires impractically high overpotentials. Recently, electrocatalysts based on oxide-derived metal nanostructures have been shown to enable CO2 reduction at low overpotentials. However, it remains unclear how the electrocatalytic activity of these metals is influenced by their native oxides, mainly because microstructural features such as interfaces and defects influence CO2 reduction activity yet are difficult to control. To evaluate the role of the two different catalytic sites, here we fabricate two kinds of four-atom-thick layers: pure cobalt metal, and co-existing domains of cobalt metal and cobalt oxide. Cobalt mainly produces formate (HCOO-) during CO2 electroreduction; we find that surface cobalt atoms of the atomically thin layers have higher intrinsic activity and selectivity towards formate production, at lower overpotentials, than do surface cobalt atoms on bulk samples. Partial oxidation of the atomic layers further increases their intrinsic activity, allowing us to realize stable current densities of about 10 milliamperes per square centimetre over 40 hours, with approximately 90 per cent formate selectivity at an overpotential of only 0.24 volts, which outperforms previously reported metal or metal oxide electrodes evaluated under comparable conditions. The correct morphology and oxidation state can thus transform a material from one considered nearly non-catalytic for the CO2 electroreduction reaction into an active catalyst. These findings point to new opportunities for manipulating and improving the CO2 electroreduction properties of metal systems

Effects of concentration of Ag nanoparticles on surface structure and in vitro biological responses of oxide layer on pure titanium via plasma electrolytic oxidation

Energy Technology Data Exchange (ETDEWEB)

Shin, Ki Ryong; Kim, Yeon Sung; Kim, Gye Won [Department of Materials Science and Engineering, Hanyang University, Ansan 425-791 (Korea, Republic of); Yang, Hae Woong [School of Materials Science and Engineering, Yeungnam University, Gyeongsan 712-749 (Korea, Republic of); Ko, Young Gun, E-mail: younggun@ynu.ac.kr [School of Materials Science and Engineering, Yeungnam University, Gyeongsan 712-749 (Korea, Republic of); Shin, Dong Hyuk, E-mail: dhshin@hanyang.ac.kr [Department of Materials Science and Engineering, Hanyang University, Ansan 425-791 (Korea, Republic of)

2015-08-30

Highlights: • Ag nanoparticles were embedded into the oxide surface without any compositional changes. • Oxide layer from the electrolyte with 0.1 g/l Ag nanoparticles could disinfect all bacteria. • With increasing Ag nanoparticles, bone-forming ability and cell proliferation rate decrease. - Abstract: This study was to investigate how Ag nanoparticles with various concentrations affect the surface structure and in vitro biological properties of oxide layers on the pure titanium produced by a plasma electrolytic oxidation (PEO) process. For this aim, PEO processes were carried out at an AC current density of 100 mA/cm{sup 2} for 300 s in potassium pyrophosphate (K{sub 4}P{sub 2}O{sub 7}) electrolytes containing 0, 0.1, 0.3 and 0.5 g/l Ag nanoparticles. Structural investigations using scanning electron microscopy evidenced that the oxide layers showed the successful incorporation of Ag nanoparticles, and the topographical deformation of the porous surface was found when the concentration of Ag nanoparticles was more than 0.1 g/l. Based on the anti-bacterial activity of all oxide layers, the Ag nanoparticles uniformly spread were of considerable importance in triggering the disinfection of E. coli bacteria. The bone forming abilities and cell (MC3T3-E1) proliferation rates of oxide layers produced in electrolytes containing 0 and 0.1 g/l Ag nanoparticles were higher than those containing 0.3 and 0.5 g/l Ag nanoparticles. Consequently, the oxide layer on pure titanium via PEO process in the electrolyte with 0.1 g/l Ag nanoparticles exhibited better the bioactivity accompanying the anti-bacterial activity.

High-performance a-IGZO thin-film transistor with conductive indium-tin-oxide buried layer

Science.gov (United States)

Ahn, Min-Ju; Cho, Won-Ju

2017-10-01

In this study, we fabricated top-contact top-gate (TCTG) structure of amorphous indium-gallium-zinc oxide (a-IGZO) thin-film transistors (TFTs) with a thin buried conductive indium-tin oxide (ITO) layer. The electrical performance of a-IGZO TFTs was improved by inserting an ITO buried layer under the IGZO channel. Also, the effect of the buried layer's length on the electrical characteristics of a-IGZO TFTs was investigated. The electrical performance of the transistors improved with increasing the buried layer's length: a large on/off current ratio of 1.1×107, a high field-effect mobility of 35.6 cm2/Vs, a small subthreshold slope of 116.1 mV/dec, and a low interface trap density of 4.2×1011 cm-2eV-1 were obtained. The buried layer a-IGZO TFTs exhibited enhanced transistor performance and excellent stability against the gate bias stress.

Chemical gating of epitaxial graphene through ultrathin oxide layers.

Science.gov (United States)

Larciprete, Rosanna; Lacovig, Paolo; Orlando, Fabrizio; Dalmiglio, Matteo; Omiciuolo, Luca; Baraldi, Alessandro; Lizzit, Silvano

2015-08-07

We achieved a controllable chemical gating of epitaxial graphene grown on metal substrates by exploiting the electrostatic polarization of ultrathin SiO2 layers synthesized below it. Intercalated oxygen diffusing through the SiO2 layer modifies the metal-oxide work function and hole dopes graphene. The graphene/oxide/metal heterostructure behaves as a gated plane capacitor with the in situ grown SiO2 layer acting as a homogeneous dielectric spacer, whose high capacity allows the Fermi level of graphene to be shifted by a few hundreds of meV when the oxygen coverage at the metal substrate is of the order of 0.5 monolayers. The hole doping can be finely tuned by controlling the amount of interfacial oxygen, as well as by adjusting the thickness of the oxide layer. After complete thermal desorption of oxygen the intrinsic doping of SiO2 supported graphene is evaluated in the absence of contaminants and adventitious adsorbates. The demonstration that the charge state of graphene can be changed by chemically modifying the buried oxide/metal interface hints at the possibility of tuning the level and sign of doping by the use of other intercalants capable of diffusing through the ultrathin porous dielectric and reach the interface with the metal.

Ultra thin buried oxide layers formed by low dose Simox process

Energy Technology Data Exchange (ETDEWEB)

Aspar, B.; Pudda, C.; Papon, A.M. [CEA Centre d`Etudes de Grenoble, 38 (France). Lab. d`Electronique et d`Instrumentation; Auberton Herve, A.J.; Lamure, J.M. [SOITEC, 38 - Grenoble (France)

1994-12-31

Oxygen low dose implantation is studied for two implantation energies. For 190 keV, a continuous buried oxide layer is obtained with a high dislocation density in the top silicon layer due to SiO{sub 2} precipitates. For 120 keV, this silicon layer is free of SiO{sub 2} precipitate and has a low dislocation density. Low density of pin-holes is observed in the buried oxide. The influence of silicon islands in the buried oxide on the breakdown electric fields is discussed. (authors). 6 refs., 5 figs.

Ultra thin buried oxide layers formed by low dose Simox process

International Nuclear Information System (INIS)

Aspar, B.; Pudda, C.; Papon, A.M.

1994-01-01

Oxygen low dose implantation is studied for two implantation energies. For 190 keV, a continuous buried oxide layer is obtained with a high dislocation density in the top silicon layer due to SiO 2 precipitates. For 120 keV, this silicon layer is free of SiO 2 precipitate and has a low dislocation density. Low density of pin-holes is observed in the buried oxide. The influence of silicon islands in the buried oxide on the breakdown electric fields is discussed. (authors). 6 refs., 5 figs

Layer-by-layer assembly of graphene oxide on polypropylene macroporous membranes via click chemistry to improve antibacterial and antifouling performance

Energy Technology Data Exchange (ETDEWEB)

Zhang, Zhen-Bei, E-mail: 1021453457@qq.com [The Key Laboratory of Functional Molecular Solids, Ministry of Education, Anhui Key Laboratory of Molecular-Based Materials, College of Chemistry and Materials Science, Anhui Normal University, East Beijing Rd. 1, Wuhu, Anhui 241000 (China); Wu, Jing-Jing, E-mail: 957522275@qq.com [The Key Laboratory of Functional Molecular Solids, Ministry of Education, Anhui Key Laboratory of Molecular-Based Materials, College of Chemistry and Materials Science, Anhui Normal University, East Beijing Rd. 1, Wuhu, Anhui 241000 (China); Su, Yu, E-mail: 819388710@qq.com [The Key Laboratory of Functional Molecular Solids, Ministry of Education, Anhui Key Laboratory of Molecular-Based Materials, College of Chemistry and Materials Science, Anhui Normal University, East Beijing Rd. 1, Wuhu, Anhui 241000 (China); Zhou, Jin, E-mail: zhoujin_ah@163.com [Department of Materials and Chemical Engineering, Chizhou University, Muzhi Rd. 199, Chizhou, Anhui 247000 (China); Gao, Yong, E-mail: 154682180@qq.com [School of Chemistry and Environmental Engineering, Jiangsu University of Technology, Changzhou 213001 (China); Yu, Hai-Yin, E-mail: yhy456@mail.ahnu.edu.cn [The Key Laboratory of Functional Molecular Solids, Ministry of Education, Anhui Key Laboratory of Molecular-Based Materials, College of Chemistry and Materials Science, Anhui Normal University, East Beijing Rd. 1, Wuhu, Anhui 241000 (China); Gu, Jia-Shan, E-mail: jiashanG@mail.ahnu.edu.cn [The Key Laboratory of Functional Molecular Solids, Ministry of Education, Anhui Key Laboratory of Molecular-Based Materials, College of Chemistry and Materials Science, Anhui Normal University, East Beijing Rd. 1, Wuhu, Anhui 241000 (China)

2015-03-30

Graphical abstract: - Highlights: • Clickable membrane prepared by photo bromination and S{sub N}2 nucleophilic substitution. • Azide graphene oxide prepared by ring-opening reaction. • Alkyne graphene oxide was prepared via esterification reaction. • Layer-by-layer assembly of graphene oxide on membrane by click chemistry. • Antibacterial and antifouling characteristics were enhanced greatly. - Abstract: Polypropylene is an extensively used membrane material; yet, polypropylene membranes exhibit extremely poor resistance to protein fouling. To ameliorate this issue, graphene oxide (GO) nanosheets were used to modify macroporous polypropylene membrane (MPPM) via layer-by-layer assembly technique through click reaction. First, alkyne-terminated GO was prepared through esterification between carboxyl groups in GO and amide groups in propargylamine; azide-terminated GO was synthesized by the ring-opening reaction of epoxy groups in GO with sodium azide. Second, GO was introduced to the membrane by click chemistry. Characterizations of infrared spectra and X-ray photoelectron spectroscopy confirmed the modification. The sharply decreasing of static water contact angle indicated the improvement of the surface hydrophilicity for GO modified membrane. Introducing GO to the membrane results in a dramatic increase of water flux, improvements in the antifouling characteristics and antibacterial property for the membranes. The pure water flux through the 5-layered GO modified membrane is 1.82 times that through the unmodified one. The water flux restores to 43.0% for the unmodified membrane while to 79.8% for the modified membrane. The relative flux reduction decreases by 32.1% due to GO modification. The antibacterial property was also enhanced by two-thirds. These results demonstrate that the antifouling and antibacterial characteristics can be raised by tethering GO to the membrane surface.

Layer-by-layer assembly of graphene oxide on polypropylene macroporous membranes via click chemistry to improve antibacterial and antifouling performance

International Nuclear Information System (INIS)

Zhang, Zhen-Bei; Wu, Jing-Jing; Su, Yu; Zhou, Jin; Gao, Yong; Yu, Hai-Yin; Gu, Jia-Shan

2015-01-01

Graphical abstract: - Highlights: • Clickable membrane prepared by photo bromination and S N 2 nucleophilic substitution. • Azide graphene oxide prepared by ring-opening reaction. • Alkyne graphene oxide was prepared via esterification reaction. • Layer-by-layer assembly of graphene oxide on membrane by click chemistry. • Antibacterial and antifouling characteristics were enhanced greatly. - Abstract: Polypropylene is an extensively used membrane material; yet, polypropylene membranes exhibit extremely poor resistance to protein fouling. To ameliorate this issue, graphene oxide (GO) nanosheets were used to modify macroporous polypropylene membrane (MPPM) via layer-by-layer assembly technique through click reaction. First, alkyne-terminated GO was prepared through esterification between carboxyl groups in GO and amide groups in propargylamine; azide-terminated GO was synthesized by the ring-opening reaction of epoxy groups in GO with sodium azide. Second, GO was introduced to the membrane by click chemistry. Characterizations of infrared spectra and X-ray photoelectron spectroscopy confirmed the modification. The sharply decreasing of static water contact angle indicated the improvement of the surface hydrophilicity for GO modified membrane. Introducing GO to the membrane results in a dramatic increase of water flux, improvements in the antifouling characteristics and antibacterial property for the membranes. The pure water flux through the 5-layered GO modified membrane is 1.82 times that through the unmodified one. The water flux restores to 43.0% for the unmodified membrane while to 79.8% for the modified membrane. The relative flux reduction decreases by 32.1% due to GO modification. The antibacterial property was also enhanced by two-thirds. These results demonstrate that the antifouling and antibacterial characteristics can be raised by tethering GO to the membrane surface

Increasing the solar cell power output by coating with transition metal-oxide nanorods

International Nuclear Information System (INIS)

Kuznetsov, I.A.; Greenfield, M.J.; Mehta, Y.U.; Merchan-Merchan, W.; Salkar, G.; Saveliev, A.V.

2011-01-01

Highlights: → Nanoparticles enhance solar cell efficiency. → Solar cell power increase by nanorod coating. → Metal-oxide nanorods are prepared in flames. → Molybdenum oxide nanorods effectively scatter light on solar cell surface. → Scattering efficiency depends on coating density. -- Abstract: Photovoltaic cells produce electric current through interactions among photons from an ambient light source and electrons in the semiconductor layer of the cell. However, much of the light incident on the panel is reflected or absorbed without inducing the photovoltaic effect. Transition metal-oxide nanoparticles, an inexpensive product of a process called flame synthesis, can cause scattering of light. Scattering can redirect photon flux, increasing the fraction of light absorbed in the thin active layer of silicon solar cells. This research aims to demonstrate that the application of transition metal-oxide nanorods to the surface of silicon solar panels can enhance the power output of the panels. Several solar panels were coated with a nanoparticle-methanol suspension, and the power outputs of the panels before and after the treatment were compared. The results demonstrate an increase in power output of up to 5% after the treatment. The presence of metal-oxide nanorods on the surface of the coated solar cells is confirmed by electron microscopy.

Strong and reversible modulation of carbon nanotube-silicon heterojunction solar cells by an interfacial oxide layer.

Science.gov (United States)

Jia, Yi; Cao, Anyuan; Kang, Feiyu; Li, Peixu; Gui, Xuchun; Zhang, Luhui; Shi, Enzheng; Wei, Jinquan; Wang, Kunlin; Zhu, Hongwei; Wu, Dehai

2012-06-21

Deposition of nanostructures such as carbon nanotubes on Si wafers to make heterojunction structures is a promising route toward high efficiency solar cells with reduced cost. Here, we show a significant enhancement in the cell characteristics and power conversion efficiency by growing a silicon oxide layer at the interface between the nanotube film and Si substrate. The cell efficiency increases steadily from 0.5% without interfacial oxide to 8.8% with an optimal oxide thickness of about 1 nm. This systematic study reveals that formation of an oxide layer switches charge transport from thermionic emission to a mixture of thermionic emission and tunneling and improves overall diode properties, which are critical factors for tailoring the cell behavior. By controlled formation and removal of interfacial oxide, we demonstrate oscillation of the cell parameters between two extreme states, where the cell efficiency can be reversibly altered by a factor of 500. Our results suggest that the oxide layer plays an important role in Si-based photovoltaics, and it might be utilized to tune the cell performance in various nanostructure-Si heterojunction structures.

Aluminum oxide barrier coating on polyethersulfone substrate by atomic layer deposition for barrier property enhancement

International Nuclear Information System (INIS)

Kim, Hyun Gi; Kim, Sung Soo

2011-01-01

Aluminum oxide layers were deposited on flexible polyethersulfone (PES) substrates via plasma enhanced atomic layer deposition (PEALD) process using trimethylaluminum (TMA) and oxygen as precursor and reactant materials. Several process parameters in PEALD process were investigated in terms of refractive index and layer thickness. Number of process cycle increased the thickness and refractive index of the layer to enhance the barrier properties. Non-physisorbed TMA and unreacted oxygen were purged before and after the plasma reaction, respectively. Identical purge time was applied to TMA and oxygen and it was optimized for 10 s. Thinner and denser layer was formed as substrate temperature increased. However, the PES substrate could be deformed above 120 o C. Aluminum oxide layer formed on PES at optimized conditions have 11.8 nm of thickness and reduced water vapor transmission rate and oxygen transmission rate to below 4 x 10 -3 g/m 2 day and 4 x 10 -3 cm 3 /m 2 day, respectively. Polycarbonate and polyethylene naphthalate films were also tested at optimized conditions, and they also showed quite appreciable barrier properties to be used as plastic substrates.

Two-Dimensional Layered Oxide Structures Tailored by Self-Assembled Layer Stacking via Interfacial Strain.

Science.gov (United States)

Zhang, Wenrui; Li, Mingtao; Chen, Aiping; Li, Leigang; Zhu, Yuanyuan; Xia, Zhenhai; Lu, Ping; Boullay, Philippe; Wu, Lijun; Zhu, Yimei; MacManus-Driscoll, Judith L; Jia, Quanxi; Zhou, Honghui; Narayan, Jagdish; Zhang, Xinghang; Wang, Haiyan

2016-07-06

Study of layered complex oxides emerge as one of leading topics in fundamental materials science because of the strong interplay among intrinsic charge, spin, orbital, and lattice. As a fundamental basis of heteroepitaxial thin film growth, interfacial strain can be used to design materials that exhibit new phenomena beyond their conventional forms. Here, we report a strain-driven self-assembly of bismuth-based supercell (SC) with a two-dimensional (2D) layered structure. With combined experimental analysis and first-principles calculations, we investigated the full SC structure and elucidated the fundamental growth mechanism achieved by the strain-enabled self-assembled atomic layer stacking. The unique SC structure exhibits room-temperature ferroelectricity, enhanced magnetic responses, and a distinct optical bandgap from the conventional double perovskite structure. This study reveals the important role of interfacial strain modulation and atomic rearrangement in self-assembling a layered singe-phase multiferroic thin film, which opens up a promising avenue in the search for and design of novel 2D layered complex oxides with enormous promise.

Atomic layer deposition of calcium oxide and calcium hafnium oxide films using calcium cyclopentadienyl precursor

International Nuclear Information System (INIS)

Kukli, Kaupo; Ritala, Mikko; Sajavaara, Timo; Haenninen, Timo; Leskelae, Markku

2006-01-01

Calcium oxide and calcium hafnium oxide thin films were grown by atomic layer deposition on borosilicate glass and silicon substrates in the temperature range of 205-300 o C. The calcium oxide films were grown from novel calcium cyclopentadienyl precursor and water. Calcium oxide films possessed refractive index 1.75-1.80. Calcium oxide films grown without Al 2 O 3 capping layer occurred hygroscopic and converted to Ca(OH) 2 after exposure to air. As-deposited CaO films were (200)-oriented. CaO covered with Al 2 O 3 capping layers contained relatively low amounts of hydrogen and re-oriented into (111) direction upon annealing at 900 o C. In order to examine the application of CaO in high-permittivity dielectric layers, mixtures of Ca and Hf oxides were grown by alternate CaO and HfO 2 growth cycles at 230 and 300 o C. HfCl 4 was used as a hafnium precursor. When grown at 230 o C, the films were amorphous with equal amounts of Ca and Hf constituents (15 at.%). These films crystallized upon annealing at 750 o C, showing X-ray diffraction peaks characteristic of hafnium-rich phases such as Ca 2 Hf 7 O 16 or Ca 6 Hf 19 O 44 . At 300 o C, the relative Ca content remained below 8 at.%. The crystallized phase well matched with rhombohedral Ca 2 Hf 7 O 16 . The dielectric films grown on Si(100) substrates possessed effective permittivity values in the range of 12.8-14.2

Deuterium permeation behavior of HTUPS4 steel with thermal oxidation layer

International Nuclear Information System (INIS)

Xu, Yu-Ping; Liu, Feng; Zhao, Si-Xiang; Li, Xiao-Chun; Wang, Jing; An, Zhong-Qing; Lu, Tao; Liu, Hao-Dong; Ding, Fang; Zhou, Hai-Shan; Luo, Guang-Nan

2016-01-01

The permeation behavior of creep-resistant, Al 2 O 3 -forming HTUPS austenitic stainless steels was studied using a gas driven permeation (GDP) device. The steel samples were first thermal oxidized at air condition, followed by GDP experiments. The permeability and diffusion coefficients of oxidized samples and bare 316L steels were derived and compared. In order to characterize the oxide layer, X-ray photoelectron spectroscopy was performed. An oxide layer with a thickness of 200 nm which mainly consists of Al 2 O 3 was detected.

Structures and electrochemical performances of pyrolized carbons from graphite oxides for electric double-layer capacitor

Science.gov (United States)

Kim, Ick-Jun; Yang, Sunhye; Jeon, Min-Je; Moon, Seong-In; Kim, Hyun-Soo; Lee, Yoon-Pyo; An, Kye-Hyeok; Lee, Young-Hee

The structural features and the electrochemical performances of pyrolized needle cokes from oxidized cokes are examined and compared with those of KOH-activated needle coke. The structure of needle coke is changed to a single phase of graphite oxide after oxidation treatment with an acidic solution having an NaClO 3/needle coke composition ratio of above 7.5, and the inter-layer distance of the oxidized needle coke is expanded to 6.9 Å with increasing oxygen content. After heating at 200 °C, the oxidized needle coke is reduced to a graphite structure with an inter-layer distance of 3.6 Å. By contrast, a change in the inter-layer distance in KOH-activated needle coke is not observed. An intercalation of pyrolized needle coke, observed on first charge, occurs at 1.0 V. This value is lower than that of KOH-activation needle coke. A capacitor using pyrolized needle coke exhibits a lower internal resistance of 0.57 Ω in 1 kHz, and a larger capacitance per weight and volume of 30.3 F g -1 and 26.9 F ml -1, in the two-electrode system over the potential range 0-2.5 V compared with those of a capacitor using KOH-activation of needle coke. This better electrochemical performance is attributed to a distorted graphene layer structure derived from the process of the inter-layer expansion and shrinkage.

Characterization Of Oxide Layers Produced On The AISI 321 Stainless Steel After Annealing

Directory of Open Access Journals (Sweden)

Bochnowski W.

2015-09-01

Full Text Available In this study, the structure, chemical composition and topography of oxide layers produced on the surface of the AISI 321 austenitic steel in the annealing process were analyzed. Heat treatment was done at 980°C temperature for 1 hour time in different conditions. The annealing was done in a ceramic furnace in oxidation atmosphere and in vacuum furnaces with cylindrical molybdenum and graphite chambers. The analysis was carried out using the following methods: a scanning electron microscope (SEM equipped with an energy-dispersive X-ray spectrometer (EDX, a transmission electron microscope (TEM equipped with an energy-dispersive X-ray spectrometer (EDX, an X-ray diffractometer (XRD, a secondary ion mass spectrometer with time-of-flight mass analyzer (TOF SIMS and an atomic force microscope (AFM. The oxide layer formed during annealing of the AISI 321 steel at 980°C consisted of sub-layers, diversified in the chemical composition. The thickness of the oxidized layer is depended on the annealing conditions. In a ceramic furnace in oxidation atmosphere, the thickness of the oxide layer was of 300-500 nm, in a vacuum furnace with molybdenum and graphite heating chambers, it ranged from 40 to 300 nm and from a few to 50 nm, respectively. TOF SIMS method allows to get average (for the surface of 100 μm × 100 μm depth profiles of concentration of particular elements and elements combined with oxygen. In oxide layers formed in vacuum furnaces there are no iron oxides. Titanium, apart from being bounded with carbon in carbides, is a component of the oxide layer formed on the surface of the AISI 321 steel.

Growth of micrometric oxide layers for the study of metallic surfaces decontamination by laser

Science.gov (United States)

Carvalho, Luisa; Pacquentin, Wilfried; Tabarant, Michel; Maskrot, Hicham; Semerok, Alexandre

2017-09-01

The nuclear industry produces a wide range of radioactive waste in term of level of hazard, contaminants and material. For metallic equipment like steam generators, the radioactivity is mainly located in the oxide surface. In order to study and develop techniques for dismantling and for decontamination in a safe way, it is important to have access to oxide layers with a representative distribution of non-radioactive contaminants. We propose a method of formation of oxide layer on stainless steel 304L with europium (Eu) as contaminant marker. In this method, an Eu-solution is sprayed on the stainless steel samples. The specimen are firstly treated with a pulsed nanosecond laser and secondly the steel samples are exposed to a 600°C furnace for various durations in order to grow an oxide layer. The oxide structure and in-depth distribution of Eu in the oxide layer are analysed by scanning electron microscopy coupled with energy dispersive X-ray microanalyzer, and by glow discharge optical emission or mass spectrometry. The oxide layers were grown to thicknesses in the range of 200 nm to 4.5 μm regarding to the laser treatment parameters and the heating duration. These contaminated oxides have a `duplex structure' with a mean weight percentage of 0.5% of europium in the volume of the oxide layer. It appears that europium implementation prevents the oxide growth by furnace but has no impact on laser heating. These oxide layers are used to study the decontamination of metallic surfaces such as stainless steel 304L using a nanosecond pulsed laser.

Room temperature plasma oxidation: A new process for preparation of ultrathin layers of silicon oxide, and high dielectric constant materials

International Nuclear Information System (INIS)

Tinoco, J.C.; Estrada, M.; Baez, H.; Cerdeira, A.

2006-01-01

In this paper we present basic features and oxidation law of the room temperature plasma oxidation (RTPO), as a new process for preparation of less than 2 nm thick layers of SiO 2 , and high-k layers of TiO 2 . We show that oxidation rate follows a potential law dependence on oxidation time. The proportionality constant is function of pressure, plasma power, reagent gas and plasma density, while the exponent depends only on the reactive gas. These parameters are related to the physical phenomena occurring inside the plasma, during oxidation. Metal-Oxide-Semiconductor (MOS) capacitors fabricated with these layers are characterized by capacitance-voltage, current-voltage and current-voltage-temperature measurements. Less than 2.5 nm SiO 2 layers with surface roughness similar to thermal oxide films, surface state density below 3 x 10 11 cm -2 and current density in the expected range for each corresponding thickness, were obtained by RTPO in a parallel-plate reactor, at 180 mW/cm 2 and pressure range between 9.33 and 66.5 Pa (0.07 and 0.5 Torr) using O 2 and N 2 O as reactive gases. MOS capacitors with TiO 2 layers formed by RTPO of sputtered Ti layers are also characterized. Finally, MOS capacitors with stacked layers of TiO 2 over SiO 2 , both layers obtained by RTPO, were prepared and evaluated to determine the feasibility of the use of TiO 2 as a candidate for next technology nodes

Layer Dependence of Graphene for Oxidation Resistance of Cu Surface

Institute of Scientific and Technical Information of China (English)

Yu-qing Song; Xiao-ping Wang

2017-01-01

We studied the oxidation resistance of graphene-coated Cu surface and its layer dependence by directly growing monolayer graphene with different multilayer structures coexisted,diminishing the influence induced by residue and transfer technology.It is found that the Cu surface coated with the monolayer graphene demonstrate tremendous difference in oxidation pattern and oxidation rate,compared to that coated with the bilayer graphene,which is considered to be originated from the strain-induced linear oxidation channel in monolayer graphene and the intersection of easily-oxidized directions in each layer of bilayer graphene,respectively.We reveal that the defects on the graphene basal plane but not the boundaries are the main oxidation channel for Cu surface under graphene protection.Our finding indicates that compared to putting forth efforts to improve the quality of monolayer graphene by reducing defects,depositing multilayer graphene directly on metal is a simple and effective way to enhance the oxidation resistance of graphene-coated metals.

Heterojunction PbS nanocrystal solar cells with oxide charge-transport layers.

Science.gov (United States)

Hyun, Byung-Ryool; Choi, Joshua J; Seyler, Kyle L; Hanrath, Tobias; Wise, Frank W

2013-12-23

Oxides are commonly employed as electron-transport layers in optoelectronic devices based on semiconductor nanocrystals, but are relatively rare as hole-transport layers. We report studies of NiO hole-transport layers in PbS nanocrystal photovoltaic structures. Transient fluorescence experiments are used to verify the relevant energy levels for hole transfer. On the basis of these results, planar heterojunction devices with ZnO as the photoanode and NiO as the photocathode were fabricated and characterized. Solution-processed devices were used to systematically study the dependence on nanocrystal size and achieve conversion efficiency as high as 2.5%. Optical modeling indicates that optimum performance should be obtained with thinner oxide layers than can be produced reliably by solution casting. Room-temperature sputtering allows deposition of oxide layers as thin as 10 nm, which enables optimization of device performance with respect to the thickness of the charge-transport layers. The best devices achieve an open-circuit voltage of 0.72 V and efficiency of 5.3% while eliminating most organic material from the structure and being compatible with tandem structures.

Fabrication of oxide layer on zirconium by micro-arc oxidation: Structural and antimicrobial characteristics.

Science.gov (United States)

Fidan, S; Muhaffel, F; Riool, M; Cempura, G; de Boer, L; Zaat, S A J; Filemonowicz, A Czyrska-; Cimenoglu, H

2017-02-01

The aim of this study was to cover the surfaces of zirconium (Zr) with an antimicrobial layer for biomedical applications. For this purpose, the micro-arc oxidation (MAO) process was employed in a sodium silicate and sodium hydroxide containing base electrolyte with and without addition of silver acetate (AgC 2 H 3 O 2 ). In general, synthesized MAO layers were composed of zirconium oxide (ZrO 2 ) and zircon (ZrSiO 4 ). Addition of AgC 2 H 3 O 2 into the base electrolyte caused homogenous precipitation of silver-containing particles in the MAO layer, which exhibited excellent antibacterial efficiency against methicillin-resistant Staphylococcus aureus (MRSA) as compared to the untreated and MAO-treated Zr. Copyright © 2016 Elsevier B.V. All rights reserved.

Growth and properties of epitaxial iron oxide layers

NARCIS (Netherlands)

Voogt, F.C; Fujii, T; Hibma, T; Zhang, G.L.; Smulders, P.J M

1996-01-01

Epitaxial layers of iron oxides have been grown on a MgO(001) substrate by evaporating natural Fe or Fe-57 from Knudsen cells in the presence of a NO2 flow directed to the substrate. The resulting layers have been investigated in situ with LEED, RHEED, AES and XPS and ex situ with GEMS and ion beam

Growth of micrometric oxide layers for the study of metallic surfaces decontamination by laser

Directory of Open Access Journals (Sweden)

Carvalho Luisa

2017-01-01

Full Text Available The nuclear industry produces a wide range of radioactive waste in term of level of hazard, contaminants and material. For metallic equipment like steam generators, the radioactivity is mainly located in the oxide surface. In order to study and develop techniques for dismantling and for decontamination in a safe way, it is important to have access to oxide layers with a representative distribution of non-radioactive contaminants. We propose a method of formation of oxide layer on stainless steel 304L with europium (Eu as contaminant marker. In this method, an Eu-solution is sprayed on the stainless steel samples. The specimen are firstly treated with a pulsed nanosecond laser and secondly the steel samples are exposed to a 600°C furnace for various durations in order to grow an oxide layer. The oxide structure and in-depth distribution of Eu in the oxide layer are analysed by scanning electron microscopy coupled with energy dispersive X-ray microanalyzer, and by glow discharge optical emission or mass spectrometry. The oxide layers were grown to thicknesses in the range of 200 nm to 4.5 μm regarding to the laser treatment parameters and the heating duration. These contaminated oxides have a ‘duplex structure’ with a mean weight percentage of 0.5% of europium in the volume of the oxide layer. It appears that europium implementation prevents the oxide growth by furnace but has no impact on laser heating. These oxide layers are used to study the decontamination of metallic surfaces such as stainless steel 304L using a nanosecond pulsed laser.

Effect of porous silicon layer on the performance of Si/oxide photovoltaic and photoelectrochemical cells

International Nuclear Information System (INIS)

Badawy, Waheed A.

2008-01-01

Photovoltaic and photoelectrochemical systems were prepared by the formation of a thin porous film on silicon. The porous silicon layer was formed on the top of a clean oxide free silicon wafer surface by anodic etching in HF/H 2 O/C 2 H 5 OH mixture (2:1:1). The silicon was then covered by an oxide film (tin oxide, ITO or titanium oxide). The oxide films were prepared by the spray/pyrolysis technique which enables doping of the oxide film by different atoms like In, Ru or Sb during the spray process. Doping of SnO 2 or TiO 2 films with Ru atoms improves the surface characteristics of the oxide film which improves the solar conversion efficiency. The prepared solar cells are stable against environmental attack due to the presence of the stable oxide film. It gives relatively high short circuit currents (I sc ), due to the presence of the porous silicon layer, which leads to the recorded high conversion efficiency. Although the open-circuit potential (V oc ) and fill factor (FF) were not affected by the thickness of the porous silicon film, the short circuit current was found to be sensitive to this thickness. An optimum thickness of the porous film and also the oxide layer is required to optimize the solar cell efficiency. The results represent a promising system for the application of porous silicon layers in solar energy converters. The use of porous silicon instead of silicon single crystals in solar cell fabrication and the optimization of the solar conversion efficiency will lead to the reduction of the cost as an important factor and also the increase of the solar cell efficiency making use of the large area of the porous structures

Effect of a surface oxide-dispersion-strengthened layer on mechanical strength of zircaloy-4 tubes

Directory of Open Access Journals (Sweden)

Yang-Il Jung

2018-03-01

Full Text Available An oxide-dispersion-strengthened (ODS layer was formed on Zircaloy-4 tubes by a laser beam scanning process to increase mechanical strength. Laser beam was used to scan the yttrium oxide (Y2O3–coated Zircaloy-4 tube to induce the penetration of Y2O3 particles into Zircaloy-4. Laser surface treatment resulted in the formation of an ODS layer as well as microstructural phase transformation at the surface of the tube. The mechanical strength of Zircaloy-4 increased with the formation of the ODS layer. The ring-tensile strength of Zircaloy-4 increased from 790 to 870 MPa at room temperature, from 500 to 575 MPa at 380°C, and from 385 to 470 MPa at 500°C. Strengthening became more effective as the test temperature increased. It was noted that brittle fracture occurred at room temperature, which was not observed at elevated temperatures. Resistance to dynamic high-temperature bursting improved. The burst temperature increased from 760 to 830°C at a heating rate of 5°C/s and internal pressure of 8.3 MPa. The burst opening was also smaller than those in fresh Zircaloy-4 tubes. This method is expected to enhance the safety of Zr fuel cladding tubes owing to the improvement of their mechanical properties. Keywords: Laser Surface Treatment, Microstructure, Oxide Dispersion Strengthened Alloy, Tensile Strength, Zirconium Alloy

Improved performances of organic light-emitting diodes with mixed layer and metal oxide as anode buffer

Science.gov (United States)

Xue, Qin; Liu, Shouyin; Zhang, Shiming; Chen, Ping; Zhao, Yi; Liu, Shiyong

2013-01-01

We fabricated organic light-emitting devices (OLEDs) employing 2-methyl-9,10-di(2-naphthyl)-anthracene (MADN) as hole-transport material (HTM) instead of commonly used N,N'-bis-(1-naphthyl)-N,N'-diphenyl,1,1'-biphenyl-4,4'-diamine (NPB). After inserting a 0.9 nm thick molybdenum oxide (MoOx) layer at the indium tin oxide (ITO)/MADN interface and a 5 nm thick mixed layer at the organic/organic heterojunction interface, the power conversion efficiency of the device can be increased by 4-fold.

Formation of thick stratiform Fe-Ti oxide layers in layered intrusion and frequent replenishment of fractionated mafic magma: Evidence from the Panzhihua intrusion, SW China

Science.gov (United States)

Song, Xie-Yan; Qi, Hua-Wen; Hu, Rui-Zhong; Chen, Lie-Meng; Yu, Song-Yue; Zhang, Jia-Fei

2013-03-01

Panzhihua intrusion is one of the largest layered intrusions that hosts huge stratiform Fe-Ti oxide layers in the central part of the Emeishan large igneous province, SW China. Up to 60 m thick stratiform massive Fe-Ti oxide layers containing 85 modal% of magnetite and ilmenite and overlying magnetite gabbro compose cyclic units of the Lower Zone of the intrusion. The cyclic units of the Middle Zone consist of magnetite gabbro and overlying gabbro. In these cyclic units, contents of Fe2O3(t), TiO2 and Cr and Fe3+/Ti4+ ratio of the rocks decrease upward, Cr content of magnetite and forsterite percentage of olivine decrease as well. The Upper Zone consists of apatite gabbro characterized by enrichment of incompatible elements (e.g., 12-18 ppm La, 20-28 ppm Y) and increasing of Fe3+/Ti4+ ratio (from 1.3 to 2.3) upward. These features indicate that the Panzhihua intrusion was repeatedly recharged by more primitive magma and evolved magmas had been extracted. Calculations using MELTS indicate that extensive fractionation of olivine and clinopyroxene in deep level resulted in increasing Fe and Ti contents in the magma. When these Fe-Ti-enriched magmas were emplaced along the base of the Panzhihua intrusion, Fe-Ti oxides became an early crystallization phase, leading to a residual magma of lower density. We propose that the unusually thick stratiform Fe-Ti oxide layers resulted from coupling of gravity settling and sorting of the crystallized Fe-Ti oxides from Fe-Ti-enriched magmas and frequent magma replenishment along the floor of the magma chamber.

Ellipsometry measurements of thickness of oxide and water layers on spherical and flat silicon surfaces

International Nuclear Information System (INIS)

Kenny, M.J.; Netterfield, R.; Wielunski, L.S.

1998-01-01

Full text: Ellipsometry has been used to measure the thickness of oxide layers on single crystal silicon surfaces, both flat and spherical and also to measure the extent of adsorption of moisture on the surface as a function of partial water vapour pressure. The measurements form part of an international collaborative project to make a precise determination of the Avogadro constant (ΔN A /N A -8 ) which will then be used to obtain an absolute definition of the kilogram, rather than one in terms of an artefact. Typically the native oxide layer on a cleaned silicon wafer is about 2 nm thick. On a polished sphere this oxide layer is typically 8 to 10 nm thick, the increased thickness being attributed to parameters related to the polishing process. Ellipsometry measurements on an 89 mm diameter polished silicon sphere at both VUW and CSIRO indicated a SiO 2 layer at 7 to 10 nm thick. It was observed that this thickness varied regularly. The crystal orientation of the sphere was determined using electron patterns generated from an electron microscope and the oxide layer was then measured through 180 arcs of great circles along (110) and (100) planes. It was observed that the thickness varied systematically with orientation. The minimum thickness was 7.4 nm at the axis (softest direction in silicon) and the greatest thickness was 9.5 nm at the axis (hardest direction in silicon). This is similar to an orientation dependent cubic pattern which has been observed to be superimposed on polished silicon spheres. At VUW, the sphere was placed in an evacuated bell jar and the ellipsometry signal was observed as the water vapour pressure was progressively increased up to saturation. The amount of water vapour adsorbed at saturation was one or two monolayers, indicating that the sphere does not wet

Heterojunction PbS Nanocrystal Solar Cells with Oxide Charge-Transport Layers

KAUST Repository

Hyun, Byung-Ryool

2013-12-23

Oxides are commonly employed as electron-transport layers in optoelectronic devices based on semiconductor nanocrystals, but are relatively rare as hole-transport layers. We report studies of NiO hole-transport layers in PbS nanocrystal photovoltaic structures. Transient fluorescence experiments are used to verify the relevant energy levels for hole transfer. On the basis of these results, planar heterojunction devices with ZnO as the photoanode and NiO as the photocathode were fabricated and characterized. Solution-processed devices were used to systematically study the dependence on nanocrystal size and achieve conversion efficiency as high as 2.5%. Optical modeling indicates that optimum performance should be obtained with thinner oxide layers than can be produced reliably by solution casting. Roomerature sputtering allows deposition of oxide layers as thin as 10 nm, which enables optimization of device performance with respect to the thickness of the charge-transport layers. The best devices achieve an open-circuit voltage of 0.72 V and efficiency of 5.3% while eliminating most organic material from the structure and being compatible with tandem structures. © 2013 American Chemical Society.

Natural convection of the oxide pool in a three-layer configuration of core melts

Energy Technology Data Exchange (ETDEWEB)

Kim, Su-Hyeon; Park, Hae-Kyun; Chung, Bum-Jin, E-mail: bjchung@khu.ac.kr

2017-06-15

Highlights: • Natural convection of oxide pool in 3-layer configuration during IVR was investigated. • High Ra was achieved by using mass transfer experiments based on analogy concept. • Heat ratio to light metal layer was 14% higher for 3-layer configuration than 2-layer one. • Heat transfer to heavy metal layer was poor and hence heat load to side wall increased. • Angular heat loads to side wall showed strengthened heat focusing at uppermost location. - Abstract: We investigated the natural convection of the oxide layer in a three-layer configuration of core melts in a severe accident. In order to achieve high modified Rayleigh numbers of 10{sup 12}–10{sup 13}, mass transfer experiments were performed using a copper sulfate electroplating system based upon the analogy between heat and mass transfer. Four different cooling conditions of the top and the bottom plates were tested. The upward heat ratios were 14% higher for three-layer than for two-layer due to the reduced heights and the downward heat ratios were lower the same amount. The local Nusselt numbers for the top and the bottom plates were measured and compared with the two layer configuration. To explore the heat load to the reactor vessel, the angle-dependent heat fluxes at the side wall, were measured and compared with the two-layer configuration. Heat load to the side wall and peak heat at the uppermost location were intensified for the three-layer configuration.

A Novel Oxidation-Reduction Route for Layer-by-Layer Synthesis of TiO2 Nanolayers and Investigation of Its Photocatalytical Properties

Directory of Open Access Journals (Sweden)

Konstantin Semishchenko

2014-01-01

Full Text Available Layer-by-layer (LbL synthesis of titanium dioxide was performed by an oxidation-reduction route using a Ti(OH3 colloid and NaNO2 solutions. A model of chemical reactions was proposed based on the results of an investigation of synthesized nanolayers by scanning electron microscopy, electron microprobe analysis and X-ray photoelectron spectroscopy, and studying colloidal solution of Ti(OH3 with laser Doppler microelectrophoresis. At each cycle, negatively charged colloidal particles of [Ti(OH3]HSO4- adsorbed onto the surface of substrate. During the next stage of treatment in NaNO2 solution, the particles were oxidized to Ti(OH4. Photocatalytic activity was studied by following decomposition of methylene blue (MB under UV irradiation. Sensitivity of the measurements was increased using a diffuse transmittance (DT method. The investigation revealed strong photocatalytical properties of the synthesized layers, caused by their high area per unit volume and uniform globular structure.

Air-Impregnated Nanoporous Anodic Aluminum Oxide Layers for Enhancing the Corrosion Resistance of Aluminum.

Science.gov (United States)

Jeong, Chanyoung; Lee, Junghoon; Sheppard, Keith; Choi, Chang-Hwan

2015-10-13

Nanoporous anodic aluminum oxide layers were fabricated on aluminum substrates with systematically varied pore diameters (20-80 nm) and oxide thicknesses (150-500 nm) by controlling the anodizing voltage and time and subsequent pore-widening process conditions. The porous nanostructures were then coated with a thin (only a couple of nanometers thick) Teflon film to make the surface hydrophobic and trap air in the pores. The corrosion resistance of the aluminum substrate was evaluated by a potentiodynamic polarization measurement in 3.5 wt % NaCl solution (saltwater). Results showed that the hydrophobic nanoporous anodic aluminum oxide layer significantly enhanced the corrosion resistance of the aluminum substrate compared to a hydrophilic oxide layer of the same nanostructures, to bare (nonanodized) aluminum with only a natural oxide layer on top, and to the latter coated with a thin Teflon film. The hydrophobic nanoporous anodic aluminum oxide layer with the largest pore diameter and the thickest oxide layer (i.e., the maximized air fraction) resulted in the best corrosion resistance with a corrosion inhibition efficiency of up to 99% for up to 7 days. The results demonstrate that the air impregnating the hydrophobic nanopores can effectively inhibit the penetration of corrosive media into the pores, leading to a significant improvement in corrosion resistance.

Improved adhesion of metal oxide layer

DEFF Research Database (Denmark)

2012-01-01

The present invention relates to: a method of preparing a coating ink for forming a zinc oxide layer, which method comprises the steps of: a) mixing zinc acetate and AlOH (OAc)2 in water or methanol and b) filtering out solids; a coating ink comprising zinc acetate and AlOH (OAc)2 in aqueous or m...

Adsorption of Ca2+ on single layer graphene oxide.

Science.gov (United States)

Terracciano, Amalia; Zhang, Jianfeng; Christodoulatos, Christos; Wu, Fengchang; Meng, Xiaoguang

2017-07-01

Graphene oxide (GO) holds great promise for a broad array of applications in many fields, but also poses serious potential risks to human health and the environment. In this study, the adsorptive properties of GO toward Ca 2+ and Na + were investigated using batch adsorption experiments, zeta potential measurements, and spectroscopic analysis. When pH increased from 4 to 9, Ca 2+ adsorption by GO and the zeta potential of GO increased significantly. Raman spectra suggest that Ca 2+ was strongly adsorbed on the GO via -COOCa + formation. On the other hand, Na + was adsorbed into the electrical diffuse layer as an inert counterion to increase the diffuse layer zeta potential. While the GO suspension became unstable with increasing pH from 4 to 10 in the presence of Ca 2+ , it was more stable at higher pH in the NaCl solution. The findings of this research provide insights in the adsorption of Ca 2+ on GO and fundamental basis for prediction of its effect on the colloidal stability of GO in the environment. Copyright © 2017. Published by Elsevier B.V.

Enhanced polymer light-emitting diode property using fluorescent conducting polymer-reduced graphene oxide nanocomposite as active emissive layer

Science.gov (United States)

Singh, Jyoti Prakash; Saha, Uttam; Jaiswal, Rimpa; Anand, Raghubir Singh; Srivastava, Anurag; Goswami, Thako Hari

2014-11-01

The present article reports the polymer light-emitting diode property of the nanocomposite comprising poly 9,9-dioctyl fluorene- alt-bithiophene and reduced graphene oxide used as an emissive layer. Two times repetition of Hummers oxidation and hydrazine hydrate reduction method produce reduced graphene oxide (term as rGO2) with more uniform distribution in size and thickness. In addition, this uniquely synthesized rGO2 induces favorable shift in balance of electron and hole recombination zone toward the center of emissive layer owing to increase in in-plane crystallite size and high localize aromatic confinement. Five times increase in maximum device efficiency (Cd/A) and three times increase in maximum brightness (Cd/m2) are achieved with the LED device using nanocomposite as emissive layer compared to neat polymer. Also, the fabricated device requires relatively low turn-on voltage (4 V) because of low energy barrier between PEDOT work function (-5.0 eV) and HOMO levels of bi-thiophene copolymer -5.67 eV) and nanocomposite (-5.66 eV).

Growth and thermal oxidation of Ru and ZrO2 thin films as oxidation protective layers

NARCIS (Netherlands)

Coloma Ribera, R.

2017-01-01

This thesis focuses on the study of physical and chemical processes occurring during growth and thermal oxidation of Ru and ZrO2 thin films. Acting as oxidation resistant capping materials to prevent oxidation of layers underneath, these films have several applications, i.e., in microelectronics

Mass transfer model for two-layer TBP oxidation reactions

International Nuclear Information System (INIS)

Laurinat, J.E.

1994-01-01

To prove that two-layer, TBP-nitric acid mixtures can be safely stored in the canyon evaporators, it must be demonstrated that a runaway reaction between TBP and nitric acid will not occur. Previous bench-scale experiments showed that, at typical evaporator temperatures, this reaction is endothermic and therefore cannot run away, due to the loss of heat from evaporation of water in the organic layer. However, the reaction would be exothermic and could run away if the small amount of water in the organic layer evaporates before the nitric acid in this layer is consumed by the reaction. Provided that there is enough water in the aqueous layer, this would occur if the organic layer is sufficiently thick so that the rate of loss of water by evaporation exceeds the rate of replenishment due to mixing with the aqueous layer. This report presents measurements of mass transfer rates for the mixing of water and butanol in two-layer, TBP-aqueous mixtures, where the top layer is primarily TBP and the bottom layer is comprised of water or aqueous salt solution. Mass transfer coefficients are derived for use in the modeling of two-layer TBP-nitric acid oxidation experiments. Three cases were investigated: (1) transfer of water into the TBP layer with sparging of both the aqueous and TBP layers, (2) transfer of water into the TBP layer with sparging of just the TBP layer, and (3) transfer of butanol into the aqueous layer with sparging of both layers. The TBP layer was comprised of 99% pure TBP (spiked with butanol for the butanol transfer experiments), and the aqueous layer was comprised of either water or an aluminum nitrate solution. The liquid layers were air sparged to simulate the mixing due to the evolution of gases generated by oxidation reactions. A plastic tube and a glass frit sparger were used to provide different size bubbles. Rates of mass transfer were measured using infrared spectrophotometers provided by SRTC/Analytical Development

TEM and ellipsometry studies of nanolaminate oxide films prepared using atomic layer deposition

Energy Technology Data Exchange (ETDEWEB)

Mitchell, D.R.G. [Materials and Engineering Science, ANSTO, PMB 1, Menai, NSW 2234 (Australia)]. E-mail: drm@ansto.gov.au; Attard, D.J. [Materials and Engineering Science, ANSTO, PMB 1, Menai, NSW 2234 (Australia); Finnie, K.S. [Materials and Engineering Science, ANSTO, PMB 1, Menai, NSW 2234 (Australia); Triani, G. [Materials and Engineering Science, ANSTO, PMB 1, Menai, NSW 2234 (Australia); Barbe, C.J. [Materials and Engineering Science, ANSTO, PMB 1, Menai, NSW 2234 (Australia); Depagne, C. [Materials and Engineering Science, ANSTO, PMB 1, Menai, NSW 2234 (Australia); Bartlett, J.R. [Materials and Engineering Science, ANSTO, PMB 1, Menai, NSW 2234 (Australia)

2005-04-30

Nanolaminate oxide layers consisting of TiO{sub 2} and Al{sub 2}O{sub 3} have been deposited on silicon using atomic layer deposition (ALD). Characterisation of these films has been achieved by use of a range of modern transmission electron microscopy (TEM)-based techniques, including plasmon loss imaging, energy filtered imaging and scanning TEM (STEM) X-ray line profiling. These have shown that the target thickness of the individual layers in the nanolaminate structures (20 nm) has been met with a high degree of accuracy, that the layers are extremely flat and parallel and that the interfaces between the layers are compositionally abrupt. Localised crystallisation within the stacks, and responses to electron beam irradiation point to the presence of a stress gradient within the layers. The performance of ellipsometry in characterising multilayer stacks has been benchmarked against the TEM measurements. Errors in determination of individual layer thicknesses were found to increase with growing stack size, as expected given the increasing number of interfaces incorporated in each model. The most sophisticated model gave maximum deviations of {+-}4 nm from the TEM determined values for the 5- and 10-layer stacks.

Oxide layers of Zr-1% Nb under PWR primary circuit conditions

International Nuclear Information System (INIS)

Nagy, Gabor; Kerner, Zsolt; Battistig, Gabor; Pinter-Csordas, Anna; Balogh, Janos; Pajkossy, Tamas

2001-01-01

Oxide layers were grown on Zr-1% Nb under conditions simulating those in VVER-type pressurised water reactors (PWRs), viz. in borate solutions in an autoclave at 290 deg. C. The layers were characterised by various methods: their respective thickness values were determined by weight gain measurements, Rutherford backscattering (RBS), nuclear reaction analysis (NRA) and scanning electron microscopy (SEM); the electrical properties were tested by electrochemical impedance spectroscopy. The results show that the oxide layer on Zr-1% Nb is homogeneous and somewhat thicker than that on Zircaloy-4

Effects of electrolytes variation on formation of oxide layers of 6061 Al alloys by plasma electrolytic oxidation

Institute of Scientific and Technical Information of China (English)

Kai WANG; Bon-Heun KOO; Chan-Gyu LEE; Young-Joo KIM; Sung-Hun LEE; Eungsun BYON

2009-01-01

Plasma electrolytic oxidation(PEO) processes were carried out to produce ceramic layers on 6061 aluminum substrates in four kinds of electrolytes such as silicate and aluminate solution with and without sodium fluorosilicate. The PEO processes were carried out under a hybrid voltage (260 V DC combined with 200 V, 60 Hz AC amplitude) at room temperature for 5 min. The composition, microstructure and element distribution analyses of the PEO-treated layers were carried out by XRD and SEM & EDS. The effect of the electrolyte contents on the growth mechanism, element distribution and properties of oxide layers were studied. It is obvious that the layers generated in aluminate solutions show smoother surfaces than those in silicate solutions. Moreover, an addition of fluorine ion can effectively control the layer porosity; therefore, it can enhance the properties of the layers.

Electrogeneration and study of oxide layer on AISI 316 L steel

International Nuclear Information System (INIS)

Otero, T.F.; Mateo, M.L.

1989-01-01

It has been studied by impedance technique the properties of oxide layers electrogenerated on a stainless steel by cyclic voltammetry. Also, it has been studied the behavior of these layers in chloride media applying a fast corrosion test. The results have been compared with such obtained in mild steel. UV - Vis reflectance and FTIR spectroscopies have been applied to know about the oxide composition [pt

Sputter fabricated Nb-oxide-Nb josephson junctions incorporating post-oxidation noble metal layers

International Nuclear Information System (INIS)

Bain, R.J.P.; Donaldson, G.B.

1985-01-01

We present an extension, involving other metals, of the work of Hawkins and Clarke, who found that a thin layer of copper prevented the formation of the superconductive shorts which are an inevitable consequence of sputtering niobium counter-electrodes directly on top of niobium oxide. We find gold to be the most satisfactory, and that 0.3 nm is sufficient to guarantee short-free junctions of excellent electrical and mechanical stability, though high excess conductance means they are best suited to shunted-junction applications, as in SQUIDs. We present results for critical current dependence on oxide thickness and on gold thickness. Our data shows that thermal oxide growth is described by the Cabrera-Mott mechanism. We show that the protective effect of the gold layer can be understood in terms of the electro-chemistry of the Nb-oxide-Au structure, and that the reduced quasi-particle resistance of the junctions relative to goldfree junctions with evaporated counterelectrodes can be explained in terms of barrier shape modification, and not by proximity effect mechanisms. The performance of a DC SQUID based on these junctions is described

All-oxide-based synthetic antiferromagnets exhibiting layer-resolved magnetization reversal

Science.gov (United States)

Chen, Binbin; Xu, Haoran; Ma, Chao; Mattauch, Stefan; Lan, Da; Jin, Feng; Guo, Zhuang; Wan, Siyuan; Chen, Pingfan; Gao, Guanyin; Chen, Feng; Su, Yixi; Wu, Wenbin

2017-07-01

Synthesizing antiferromagnets with correlated oxides has been challenging, owing partly to the markedly degraded ferromagnetism of the magnetic layer at nanoscale thicknesses. Here we report on the engineering of an antiferromagnetic interlayer exchange coupling (AF-IEC) between ultrathin but ferromagnetic La2/3Ca1/3MnO3 layers across an insulating CaRu1/2Ti1/2O3 spacer. The layer-resolved magnetic switching leads to sharp steplike hysteresis loops with magnetization plateaus depending on the repetition number of the stacking bilayers. The magnetization configurations can be switched at moderate fields of hundreds of oersted. Moreover, the AF-IEC can also be realized with an alternative magnetic layer of La2/3Sr1/3MnO3 that possesses a Curie temperature near room temperature. The findings will add functionalities to devices with correlated-oxide interfaces.

Deposition of thin layer (monoatomic layer) of barium on gold single crystal surfaces and studies of its oxidation employing X-ray photoelectron spectroscopy

International Nuclear Information System (INIS)

Ahmad, H.; Ahmad, R.; Khalid, M.; Alvi, R.A.

2007-01-01

Due to the high reactivity of barium with oxygen, some oxygen diffuse into the bulk to form bulk oxide and it is very difficult to differentiate the oxide over layer and the bulk oxide. To study the oxidation of barium surface layer, a thin layer (monolayer) of barium is developed over gold single crystal surface. Gold is selected as support because it is one of the least reactive metal in transition metal group and have very low probability of reaction with oxygen at room temperature (300K). Nitrous oxide (N/sub 2/O) was used as oxidant. Thin layer of barium was deposited on Au(100) surface. The barium coverage on gold surface was calculated that varied from 0.4 to 1.4 monolayer (ML). Photoelectron spectra for O(ls), N(ls), Ba (3d), and Au (4f) have been recorded on X-ray photoelectron spectrometer at different binding energy region specific for each element. The decomposition of nitrous oxide has been observed in all cases. It has found that nitrogen is evolved in the gaseous state and oxygen is adsorbed/chemisorbed on barium over layer. (author)

Improving breakdown voltage and self-heating effect for SiC LDMOS with double L-shaped buried oxide layers

Science.gov (United States)

Bao, Meng-tian; Wang, Ying

2017-02-01

In this paper, a SiC LDMOS with double L-shaped buried oxide layers (DL-SiC LDMOS) is investigated and simulated. The DL-SiC LDMOS consists of two L-shaped buried oxide layers and two SiC windows. Using 2-D numerical simulation software, Atlas, Silvaco TCAD, the breakdown voltage, and the self-heating effect are discussed. The double-L shaped buried oxide layers and SiC windows in the active area can introduce an additional electric field peak and make the electric field distribution more uniform in the drift region. In addition, the SiC windows, which connect the active area to the substrate, can facilitate heat dissipation and reduce the maximum lattice temperature of the device. Compared with the BODS structure, the DL-SiC LDMOS and BODS structures have the same device parameters, except of the buried oxide layers. The simulation results of DL-SiC LDMOS exhibits outstanding characteristics including an increase of the breakdown voltage by 32.6% to 1220 V, and a low maximum lattice temperature (535 K) at room temperature.

Growth of micrometric oxide layers to explore laser decontamination of metallic surfaces

OpenAIRE

Carvalho Luisa; Pacquentin Wilfried; Tabarant Michel; Maskrot Hicham; Semerok Alexandre

2017-01-01

The nuclear industry produces a wide range of radioactive waste in terms of hazard level, contaminants and material. For metallic equipment like steam generators, the radioactivity is mainly located in the oxide surface. In order to study and develop safe techniques for dismantling and for decontamination, it is important to have access to oxide layers with a representative distribution of non-radioactive contaminants. In this paper we propose a method for the creation of oxide layers on stai...

Atomic layer deposition grown composite dielectric oxides and ZnO for transparent electronic applications

International Nuclear Information System (INIS)

Gieraltowska, S.; Wachnicki, L.; Witkowski, B.S.; Godlewski, M.; Guziewicz, E.

2012-01-01

In this paper, we report on transparent transistor obtained using laminar structure of two high-k dielectric oxides (hafnium dioxide, HfO 2 and aluminum oxide, Al 2 O 3 ) and zinc oxide (ZnO) layer grown at low temperature (60 °C–100 °C) using Atomic Layer Deposition (ALD) technology. Our research was focused on the optimization of technological parameters for composite layers Al 2 O 3 /HfO 2 /Al 2 O 3 for thin film transistor structures with ZnO as a channel and a gate layer. We elaborate on the ALD growth of these oxides, finding that the 100 nm thick layers of HfO 2 and Al 2 O 3 exhibit fine surface flatness and required amorphous microstructure. Growth parameters are optimized for the monolayer growth mode and maximum smoothness required for gating.

Study of oxide layers in creep of Ti alloy

International Nuclear Information System (INIS)

Reis, D.A.P.; Moura Neto, C.; Machado, J.P.B.; Martins, G.V.; Barboza, M.J.R.

2009-01-01

The present study is about the effect of oxide layers in creep of Ti-6Al-4V alloy, in different atmospheres (air, nitrogen and argon). Ti-6Al-4V alloy was treated during 24 hours in a thermal treatment furnace at 600°C in different atmospheres (argon, nitrogen and air). The samples were analyzed by High Resolution X-Ray Diffraction, Scanning Electronic Microscopy (SEM), Atomic Force Microscopy (AFM) and microhardness test. The polished samples of Ti-6Al-4V alloy were treated during 24 hours at 600°C and the oxidation behavior in each case using argon, nitrogen and air atmospheres was observed. The oxidation was more aggressive in air atmosphere, forming TiO 2 film in the surface. The oxidation produced a weight gain through the oxide layer growth and hardening by oxygen dissolution. Ti-6Al-4V alloy specimens also were produced in order to test them in creep, at 250 MPa and 600 deg C, with argon, nitrogen and air atmospheres. When the Ti-6Al-4V alloy was tested under argon and nitrogen atmospheres oxidation effects are smaller and the behavior of the creep curves shows that the creep life time was better in atmospheres not so oxidant. It is observed a decreasing of steady state creep in function of the oxidation process reduction. It is shown that, for the Ti-6Al-4V alloy, their useful life is strongly affected by the atmosphere that is submitted, on account of the oxidation suffered by the material. (author)

Atomic layer deposited oxide films as protective interface layers for integrated graphene transfer

Science.gov (United States)

Cabrero-Vilatela, A.; Alexander-Webber, J. A.; Sagade, A. A.; Aria, A. I.; Braeuninger-Weimer, P.; Martin, M.-B.; Weatherup, R. S.; Hofmann, S.

2017-12-01

The transfer of chemical vapour deposited graphene from its parent growth catalyst has become a bottleneck for many of its emerging applications. The sacrificial polymer layers that are typically deposited onto graphene for mechanical support during transfer are challenging to remove completely and hence leave graphene and subsequent device interfaces contaminated. Here, we report on the use of atomic layer deposited (ALD) oxide films as protective interface and support layers during graphene transfer. The method avoids any direct contact of the graphene with polymers and through the use of thicker ALD layers (≥100 nm), polymers can be eliminated from the transfer-process altogether. The ALD film can be kept as a functional device layer, facilitating integrated device manufacturing. We demonstrate back-gated field effect devices based on single-layer graphene transferred with a protective Al2O3 film onto SiO2 that show significantly reduced charge trap and residual carrier densities. We critically discuss the advantages and challenges of processing graphene/ALD bilayer structures.

Texture and microstructure analysis of epitaxial oxide layers prepared on textured Ni-12wt%Cr tapes

Energy Technology Data Exchange (ETDEWEB)

Huehne, R; Kursumovic, A; Tomov, R I; Glowacki, B A [Department of Materials Science and IRC in Superconductivity, University of Cambridge, Pembroke Street, Cambridge, CB2 3QZ (United Kingdom); Holzapfel, B [Institut fuer Festkoerper- und Werkstoffforschung, Helmholtzstrasse 20, 01069 Dresden (Germany); Evetts, J E [Department of Materials Science and IRC in Superconductivity, University of Cambridge, Pembroke Street, Cambridge, CB2 3QZ (United Kingdom)

2003-05-07

Oxide layers for the preparation of YBa{sub 2}Cu{sub 3}O{sub 7-x} coated conductors were grown on highly textured Ni-12wt%Cr tapes in pure oxygen using surface oxidation epitaxy at temperatures between 1000 deg. C and 1300 deg. C. Microstructural investigations revealed a layered oxide structure. The upper layer consists mainly of dense cube textured NiO. This is followed by a porous layer containing NiO and NiCr{sub 2}O{sub 4} particles. A detailed texture analysis showed a cube-on-cube relationship of the NiCr{sub 2}O{sub 4} spinel to the metal substrate. Untextured Cr{sub 2}O{sub 3} particles in a nickel matrix were found in a third layer arising from internal oxidation of the alloy. A high surface roughness and mechanical instability of the oxide were observed, depending on oxidation temperature and film thickness. However, mechanically stable oxide layers have been prepared using an additional annealing step in a protective atmosphere. Additionally, mechanical polishing or a second buffer layer, which grows with a higher smoothness, may be applied to reduce the surface roughness for coated conductor applications.

Analysis on Propagation Characteristics and Experimental Verification of A1 Circumferential Waves in Nuclear Fuel Rods Coated with Oxide Layers

International Nuclear Information System (INIS)

Joo, Young Sang; Jung, Hyun Kyu; Cheong, Yong Moo; Ih, Jeong Guon

1999-01-01

The resonance scattering of acoustic waves from the cylindrical shells of nuclear fuel rods coated with oxide layers has been theoretically modeled and numerically analyzed for the propagation characteristics of the circumferential waves. The normal mode solutions of the scattering pressure of the coated shells have been obtained. The pure resonance components have been isolated using the newly proposed inherent background coefficients. The propagation characteristics of resonant circumferential waves for the shells coated with oxide layers are affected by the presence and the thickness of an oxide layer. The characteristics have been experimentally confirmed through the method of isolation and identification of resonances. The change of the phase velocity of the A 1 circumferential wave mode for the coated shell is negligible at the specified partial waves in spite of the presence of the oxide layer and the increase in coating thickness. Utilizing the invariability characteristics of the phase velocity of the A 1 mode, the oxide layer thickness of the coated shells can be estimated. A new nondestructive technique for the relative measurement of the coating thickness of coated shells has been proposed

Fabrication of heterojunction solar cells by improved tin oxide deposition on insulating layer

Science.gov (United States)

Feng, Tom; Ghosh, Amal K.

1980-01-01

Highly efficient tin oxide-silicon heterojunction solar cells are prepared by heating a silicon substrate, having an insulating layer thereon, to provide a substrate temperature in the range of about 300.degree. C. to about 400.degree. C. and thereafter spraying the so-heated substrate with a solution of tin tetrachloride in a organic ester boiling below about 250.degree. C. Preferably the insulating layer is naturally grown silicon oxide layer.

Perform Tests and Document Results and Analysis of Oxide Layer Effects and Comparisons

Energy Technology Data Exchange (ETDEWEB)

Collins, E. D. [ORNL; DelCul, G. D. [ORNL; Spencer, B. B. [ORNL; Hunt, R. D. [ORNL; Ausmus, C. [ORNL

2014-08-30

During the initial feasibility test using actual used nuclear fuel (UNF) cladding in FY 2012, an incubation period of 30–45 minutes was observed in the initial dry chlorination. The cladding hull used in the test had been previously oxidized in a dry air oxidation pretreatment prior to removal of the fuel. The cause of this incubation period was attributed to the resistance to chlorination of an oxide layer imparted by the dry oxidation pretreatment on the cladding. Subsequently in 2013, researchers at the Korea Atomic Energy Institute (KAERI) reported on their chlorination study [R1] on ~9-gram samples of unirradiated ZirloTM cladding tubes that had been previously oxidized in air at 500oC for various time periods to impart oxide layers of varying thickness. In early 2014, discussions with Indefinite Delivery, Indefinite Quantity (IDIQ) contracted technical consultants from Westinghouse described their previous development (and patents) [R2] on methods of chemical washing to remove some or all of the hydrous oxide layer imparted on UNF cladding during irradiation in light water reactors (LWRs) . Thus, the Oak Ridge National Laboratory (ORNL) study, described herein, was planned to extend the KAERI study on the effects of anhydrous oxide layers, but on larger ~100-gram samples of unirradiated zirconium alloy cladding tubes, and to investigate the effects of various methods of chemical pretreatment prior to chlorination with 100% chlorine on the average reaction rates and Cl2 usage efficiencies.

Solution processed metal oxide thin film hole transport layers for high performance organic solar cells

Science.gov (United States)

Steirer, K. Xerxes; Berry, Joseph J.; Chesin, Jordan P.; Lloyd, Matthew T.; Widjonarko, Nicodemus Edwin; Miedaner, Alexander; Curtis, Calvin J.; Ginley, David S.; Olson, Dana C.

2017-01-10

A method for the application of solution processed metal oxide hole transport layers in organic photovoltaic devices and related organic electronics devices is disclosed. The metal oxide may be derived from a metal-organic precursor enabling solution processing of an amorphous, p-type metal oxide. An organic photovoltaic device having solution processed, metal oxide, thin-film hole transport layer.

Influence of substrate preparation on the shaping of the topography of the surface of nanoceramic oxide layers

Science.gov (United States)

Bara, Marek; Kubica, Marek

2014-02-01

The paper discusses the shaping mechanism and changes occurring in the structure and topography of the surface of nanoceramic oxide layers during their formation. The paper presents the influence of substrate preparation on the surface topography of oxide layers. The layers were produced via hard anodizing on the EN AW-5251 aluminum alloy. The layers obtained were subjected to microscope examinations, image and chemical composition analyses, and stereometric examinations. Heredity of substrate properties in the topography of the surface of nanoceramic oxide layers formed as a result of electrochemical oxidation has been shown.

Layered Cu-based electrode for high-dielectric constant oxide thin film-based devices

International Nuclear Information System (INIS)

Fan, W.; Saha, S.; Carlisle, J.A.; Auciello, O.; Chang, R.P.H.; Ramesh, R.

2003-01-01

Ti-Al/Cu/Ta multilayered electrodes were fabricated on SiO 2 /Si substrates by ion beam sputtering deposition, to overcome the problems of Cu diffusion and oxidation encountered during the high dielectric constant (κ) materials integration. The Cu and Ta layers remained intact through the annealing in oxygen environment up to 600 deg. C. The thin oxide layer, formed on the Ti-Al surface, effectively prevented the oxygen penetration toward underneath layers. Complex oxide (Ba x Sr 1-x )TiO 3 (BST) thin films were grown on the layered Ti-Al/Cu/Ta electrodes using rf magnetron sputtering. The deposited BST films exhibited relatively high permittivity (150), low dielectric loss (0.007) at zero bias, and low leakage current -8 A/cm 2 at 100 kV/cm

Effect of oxide insertion layer on resistance switching properties of copper phthalocyanine

Science.gov (United States)

Joshi, Nikhil G.; Pandya, Nirav C.; Joshi, U. S.

2013-02-01

Organic memory device showing resistance switching properties is a next-generation of the electrical memory unit. We have investigated the bistable resistance switching in current-voltage (I-V) characteristics of organic diode based on copper phthalocyanine (CuPc) film sandwiched between aluminum (Al) electrodes. Pronounced hysteresis in the I-V curves revealed a resistance switching with on-off ratio of the order of 85%. In order to control the charge injection in the CuPc, nanoscale indium oxide buffer layer was inserted to form Al/CuPc/In2O3/Al device. Analysis of I-V measurements revealed space charge limited switching conduction at the Al/CuPc interface. The traps in the organic layer and charge blocking by oxide insertion layer have been used to explain the absence of resistance switching in the oxide buffer layered memory device cell. Present study offer potential applications for CuPc organic semiconductor in low power non volatile resistive switching memory and logic circuits.

An RBS study of thin PLD and MOCVD strontium copper oxide layers

Energy Technology Data Exchange (ETDEWEB)

Kantor, Z. [Institute of Physics, University of Pannonia, H-8200 Veszprem (Hungary); Papadopoulou, E.L.; Aperathitis, E. [Inst. Electronic Struture and Laser, Foundation for Research and Technology - Hellas, P.O. Box 1527, Heraklion 71110 (Greece); Deschanvres, J.-L. [LMPG INP Grenoble-Minatec, BP 257, 38016 Grenoble Cedex 1 (France); Somogyi, K. [MicroVacuum Ltd., Kerekgyarto u.: 10, H-1147 Budapest (Hungary)], E-mail: karoly.somogyi@microvacuum.com; Szendro, I. [MicroVacuum Ltd., Kerekgyarto u.: 10, H-1147 Budapest (Hungary)

2008-09-30

Strontium copper oxide (SCO) has been studied as p-type transparent (VIS) conductive oxide material. Also theoretical studies suggested p-type conductivity of the SrCu{sub 2}O{sub 2} composition. SCO thin layers, with thicknesses of 30-2000 nm, were deposited on glass and silicon substrates both by pulsed laser deposition (PLD) and by MOCVD method. The as-grown layers showed high electrical resistance. Due to an annealing process, the resistivity significantly decreased and the layers showed p-type conductivity. Optical transparency measured on samples grown on glass substrates was found about or above 80%, including also thickness dependence. RBS measurements were applied for the determination of the chemical composition profile of the layers. A comparison revealed some specific differences between as-grown and annealed PLD samples. Due to the annealing, the ratio of oxide phases was changed and a vertical inhomogeneity in chemical composition was observed. Our measurements revealed also the influence of the deposition technique and of the substrate.

On the mechanical stress of Zr, Zry, and other materials due to the formation of oxide layers

International Nuclear Information System (INIS)

Hofmann, P.

1977-06-01

Several mechanisms are indicated which during oxidation of sheets, tubes, and cylinders of pure metals and alloys might lead to plastic deformation of the remaining uncorroded cross section. Some experimental methods are described which allow evaluation of stresses occurring in oxide layers. The main reason for the creep deformation of flat and tubular specimens made of Zr and Zr alloys lies in the stresses that arise from volume increase due to the growth of oxide layers. Plastic deformations of the sheet metal specimens can be up to 100% and are anisotropic. In tubular specimens the changes in geometry (axial, radial) are much smaller in the course of oxidation and attain 2% at the maximum for Zr- or Zry-tubes and go up to 10% for Ta-tubes when no differential pressure is applied simultaneously. (orig.) [de

Synchrotron X-ray diffraction investigations on strains in the oxide layer of an irradiated Zircaloy fuel cladding

Energy Technology Data Exchange (ETDEWEB)

Chollet, Mélanie, E-mail: melanie.chollet@psi.ch [Paul Scherrer Institute, NES, 5232 Villigen (Switzerland); Valance, Stéphane; Abolhassani, Sousan; Stein, Gene [Paul Scherrer Institute, NES, 5232 Villigen (Switzerland); Grolimund, Daniel [Paul Scherrer Institute, SLS, 5232 Villigen (Switzerland); Martin, Matthias; Bertsch, Johannes [Paul Scherrer Institute, NES, 5232 Villigen (Switzerland)

2017-05-15

For the first time the microstructure of the oxide layer of a Zircaloy-2 cladding after 9 cycles of irradiation in a boiling water reactor has been analyzed with synchrotron micro-X-ray diffraction. Crystallographic strains of the monoclinic and to some extent of the tetragonal ZrO{sub 2} are depicted through the thick oxide layer. Thin layers of sub-oxide at the oxide-metal interface as found for autoclave-tested samples and described in the literature, have not been observed in this material maybe resulting from irradiation damage. Shifts of selected diffraction peaks of the monoclinic oxide show that the uniform strain produced during oxidation is orientated in the lattice and displays variations along the oxide layer. Diffraction peaks and their shifts from families of diffracting planes could be translated into a virtual tensor. This virtual tensor exhibits changes through the oxide layer passing by tensile or compressive components. - Highlights: •A Zircaloy-2 cladding irradiated 9 cycles was investigated thanks to synchrotron X-ray diffraction. •Microstructure and uniform strain through the oxide layer is revealed. •The m-ZrO{sub 2} uniform strain is oriented presenting compression along the (−111) plane. •Virtual tensor is built based on reflecting planes of families of grains. •Tensor components vary from tensile to compressive along the oxide layer.

Synchrotron X-ray diffraction investigations on strains in the oxide layer of an irradiated Zircaloy fuel cladding

International Nuclear Information System (INIS)

Chollet, Mélanie; Valance, Stéphane; Abolhassani, Sousan; Stein, Gene; Grolimund, Daniel; Martin, Matthias; Bertsch, Johannes

2017-01-01

For the first time the microstructure of the oxide layer of a Zircaloy-2 cladding after 9 cycles of irradiation in a boiling water reactor has been analyzed with synchrotron micro-X-ray diffraction. Crystallographic strains of the monoclinic and to some extent of the tetragonal ZrO 2 are depicted through the thick oxide layer. Thin layers of sub-oxide at the oxide-metal interface as found for autoclave-tested samples and described in the literature, have not been observed in this material maybe resulting from irradiation damage. Shifts of selected diffraction peaks of the monoclinic oxide show that the uniform strain produced during oxidation is orientated in the lattice and displays variations along the oxide layer. Diffraction peaks and their shifts from families of diffracting planes could be translated into a virtual tensor. This virtual tensor exhibits changes through the oxide layer passing by tensile or compressive components. - Highlights: •A Zircaloy-2 cladding irradiated 9 cycles was investigated thanks to synchrotron X-ray diffraction. •Microstructure and uniform strain through the oxide layer is revealed. •The m-ZrO 2 uniform strain is oriented presenting compression along the (−111) plane. •Virtual tensor is built based on reflecting planes of families of grains. •Tensor components vary from tensile to compressive along the oxide layer.

Densification of ∼5 nm-thick SiO_2 layers by nitric acid oxidation

International Nuclear Information System (INIS)

Choi, Jaeyoung; Joo, Soyeong; Park, Tae Joo; Kim, Woo-Byoung

2017-01-01

Highlights: • Leakage current density of the commercial PECVD grown ∼5 nm SiO_2 layer has been decreased about three orders of magnitude by densification. • The densification of SiO_2 layer is achieved by high oxidation ability of O·. • Densities of suboxide, fixed charge (N_f) and defect state (N_d) in SiO_2/Si interface are decreased by NAOS and PMA. • Tunneling barrier height (Φ_t) is increased because of the increase of atomic density in SiO_2 layer. - Abstract: Low-temperature nitric acid (HNO_3) oxidation of Si (NAOS) has been used to improve the interface and electrical properties of ∼5 nm-thick SiO_2/Si layers produced by plasma-enhanced chemical vapor deposition (PECVD). Investigations of the physical properties and electrical characteristics of these thin films revealed that although their thickness is not changed by NAOS, the leakage current density at a gate bias voltage of −1 V decreases by about two orders of magnitude from 1.868 × 10"−"5 A/cm"2. This leakage current density was further reduced by post-metallization annealing (PMA) at 250 °C for 10 min in a 5 vol.% hydrogen atmosphere, eventually reaching a level (5.2 × 10"−"8 A/cm"2) approximately three orders of magnitude less than the as-grown SiO_2 layer. This improvement is attributed to a decrease in the concentration of suboxide species (Si"1"+, Si"2"+ and Si"3"+) in the SiO_2/Si interface, as well as a decrease in the equilibrium density of defect sites (N_d) and fixed charge density (N_f). The barrier height (Φ_t) generated by a Poole-Frenkel mechanism also increased from 0.205 to 0.371 eV after NAOS and PMA. The decrease in leakage current density is therefore attributed to a densification of the SiO_2 layer in combination with the removal of OH species and increase in interfacial properties at the SiO_2/Si interface.

Aging promotes todorokite formation from layered manganese oxide at near-surface conditions

Energy Technology Data Exchange (ETDEWEB)

Cui, Haojie [Chinese Academy of Sciences, Xiamen (China). Key Lab. of Urban Environment and Health; Huazhong Agricultural Univ., Ministry of Agriculture, Wuhan (China). Key Lab. of Subtropical Agricultural Resources and Environment; Liu, Fan; Feng, Xionghan; Tan, Wenfeng [Huazhong Agricultural Univ., Ministry of Agriculture, Wuhan (China). Key Lab. of Subtropical Agricultural Resources and Environment; Wang, Ming Kuang [National Taiwan Univ., Taipei (China). Dept. of Agricultural Chemistry

2010-12-15

Todorokite is one common manganese oxide in soils and sediments and is commonly formed from layered Na-buserite. Aging processes can alter the physicochemical properties of freshly formed Na-buserite in natural environments. However, it is not clear whether and how aging affects the formation of todorokites. In the present paper, Na-buserite with aging treatment was employed to prepare todorokite at atmospheric pressure to investigate the effects of aging treatment of Na-buserite on the formation of todorokite. Four aged Na-buserite samples, which are produced through oxidation of Mn{sup 2+} in concentrated NaOH medium by O{sub 2} with aging for 3, 6, 9, and 12 months, were employed to investigate the effects of aging processes on the transformation from Na-buserite to todorokite by Mg{sup 2+}-templating reaction at atmospheric pressure. The manganese oxides were examined using X-ray diffraction (XRD), elemental analysis, determinations of the average manganese oxidation number, infrared spectroscopy (IR), and transmission electron microscopy (TEM). The XRD, IR, and elemental analyses indicate that aging treatment can alter the substructure of the freshly synthesized Na-buserite. During the aging process, some of the Mn(III) may migrate into the interlayer region or disproportionate to form Mn{sup 2+} and Mn{sup 4+} from the layer of Na-buserite and the concomitant formation of layer vacancies. The interlayer Mn{sup 3+} or Mn{sup 2+} occupied above or below the layer vacancy sites and become corner-sharing octahedral. XRD analyses and TEM clearly show that the transformation from Na-buserite to todorokite was promoted by aging treatments. The alterations of substructure of aged Na-buserites can promote the rearrangement of manganese to construct a tunnel structure during the transformation from layered manganese oxides to tunnel-structure todorokite at atmospheric pressure. The transformation from Na-buserite to todorokite was promoted by aging treatments at

Effect of aging treatment on the in vitro nickel release from porous oxide layers on NiTi

Energy Technology Data Exchange (ETDEWEB)

Huan, Z.; Fratila-Apachitei, L.E., E-mail: e.l.fratila-apachitei@tudelft.nl; Apachitei, I.; Duszczyk, J.

2013-06-01

Despite the ability of creating porous oxide layers on nickel–titanium alloy (NiTi) surface for biofunctionalization, the use of plasma electrolytic oxidation (PEO) has raised concerns over the possible increased levels of Ni release. Therefore, the primary aim of this study was to investigate the effect of aging in boiling water on Ni release from porous NiTi surfaces that have been formed by the PEO process. Based on different oxidation conditions, e.g. electrolyte composition and electrical parameters, three kinds of oxide layers with various characteristics were prepared on NiTi substrate. The process was followed by aging in boiling water for different durations. The Ni release was assessed by immersion tests in phosphate buffer saline and the Ni concentration was measured using the flame atomic absorption spectrometry. The results showed that aging in boiling water can significantly reduce the Ni release from oxidized porous samples, given that the duration of the treatment is finely adjusted according to the parameters of the as-formed oxide layer. Surface examination of the samples before and after aging in boiling water suggested that such a treatment is non-destructive while improving the corrosion resistance of oxidized samples, as evidenced by potentiodynamic polarization tests. The results of this study indicate that water boiling may be a suitable post-treatment required to minimize Ni release from porous oxides produced on NiTi by PEO for biomedical applications.

A novel and efficient oxidative functionalization of lignin by layer-by-layer immobilised Horseradish peroxidase.

Science.gov (United States)

Perazzini, Raffaella; Saladino, Raffaele; Guazzaroni, Melissa; Crestini, Claudia

2011-01-01

Horseradish peroxidase (HRP) was chemically immobilised onto alumina particles and coated by polyelectrolytes layers, using the layer-by-layer technique. The reactivity of the immobilised enzyme was studied in the oxidative functionalisation of softwood milled wood and residual kraft lignins and found higher than the free enzyme. In order to investigate the chemical modifications in the lignin structure, quantitative (31)P NMR was used. The immobilised HRP showed a higher reactivity with respect to the native enzyme yielding extensive depolymerisation of lignin. Copyright © 2010 Elsevier Ltd. All rights reserved.

Energetic basis of catalytic activity of layered nanophase calcium manganese oxides for water oxidation.

Science.gov (United States)

Birkner, Nancy; Nayeri, Sara; Pashaei, Babak; Najafpour, Mohammad Mahdi; Casey, William H; Navrotsky, Alexandra

2013-05-28

Previous measurements show that calcium manganese oxide nanoparticles are better water oxidation catalysts than binary manganese oxides (Mn3O4, Mn2O3, and MnO2). The probable reasons for such enhancement involve a combination of factors: The calcium manganese oxide materials have a layered structure with considerable thermodynamic stability and a high surface area, their low surface energy suggests relatively loose binding of H2O on the internal and external surfaces, and they possess mixed-valent manganese with internal oxidation enthalpy independent of the Mn(3+)/Mn(4+) ratio and much smaller in magnitude than the Mn2O3-MnO2 couple. These factors enhance catalytic ability by providing easy access for solutes and water to active sites and facile electron transfer between manganese in different oxidation states.

Designing high performance precursors for atomic layer deposition of silicon oxide

Energy Technology Data Exchange (ETDEWEB)

Mallikarjunan, Anupama, E-mail: mallika@airproducts.com; Chandra, Haripin; Xiao, Manchao; Lei, Xinjian; Pearlstein, Ronald M.; Bowen, Heather R.; O' Neill, Mark L. [Air Products and Chemicals, Inc., 1969 Palomar Oaks Way, Carlsbad, California 92011 (United States); Derecskei-Kovacs, Agnes [Air Products and Chemicals, Inc., 7201 Hamilton Blvd., Allentown, Pennsylvania 18195 (United States); Han, Bing [Air Products and Chemicals, Inc., 2 Dongsanhuan North Road, Chaoyang District, Beijing 100027 (China)

2015-01-15

Conformal and continuous silicon oxide films produced by atomic layer deposition (ALD) are enabling novel processing schemes and integrated device structures. The increasing drive toward lower temperature processing requires new precursors with even higher reactivity. The aminosilane family of precursors has advantages due to their reactive nature and relative ease of use. In this paper, the authors present the experimental results that reveal the uniqueness of the monoaminosilane structure [(R{sub 2}N)SiH{sub 3}] in providing ultralow temperature silicon oxide depositions. Disubstituted aminosilanes with primary amines such as in bis(t-butylamino)silane and with secondary amines such as in bis(diethylamino)silane were compared with a representative monoaminosilane: di-sec-butylaminosilane (DSBAS). DSBAS showed the highest growth per cycle in both thermal and plasma enhanced ALD. These findings show the importance of the arrangement of the precursor's organic groups in an ALD silicon oxide process.

Analysis of chemical bond states and electrical properties of stacked AlON/HfO{sub 2} gate oxides formed by using a layer-by-layer technique

Energy Technology Data Exchange (ETDEWEB)

Choi, Wonjoon; Lee, Jonghyun; Yang, Jungyup; Kim, Chaeok; Hong, Jinpyo; Nahm, Tschanguh; Byun, Byungsub; Kim, Moseok [Hanyang University, Seoul (Korea, Republic of)

2006-06-15

Stacked AlON/HfO{sub 2} thin films for gate oxides in metal-oxide-semiconductor devices are successfully prepared on Si substrates by utilizing a layer-by-layer technique integrated with an off-axis RF remote plasma sputtering process at room temperature. This off-axis structure is designed to improve the uniformity and the quality of gate oxide films. Also, a layer-by-layer technique is used to control the interface layer between the gate oxide and the Si substrate. The electrical properties of our stacked films are characterized by using capacitance versus voltage and leakage current versus voltage measurements. The stacked AlON/HfO{sub 2} gate oxide exhibits a low leakage current of about 10{sup -6} A/cm{sup 2} and a high dielectric constant value of 14.26 by effectively suppressing the interface layer between gate oxide and Si substrate. In addition, the chemical bond states and the optimum thickness of each AlON and HfO{sub 2} thin film are analyzed using X-ray photoemission spectroscopy and transmission electron microscopy measurement.

Effect of the number of iron oxide nanoparticle layers on the magnetic properties of nanocomposite LbL assemblies

International Nuclear Information System (INIS)

Dincer, Ilker; Tozkoparan, Onur; German, Sergey V.; Markin, Alexey V.; Yildirim, Oguz; Khomutov, Gennady B.; Gorin, Dmitry A.; Venig, Sergey B.; Elerman, Yalcin

2012-01-01

Aqueous colloidal suspension of iron oxide nanoparticles has been synthesized. Z-potential of iron oxide nanoparticles stabilized by citric acid was −35±3 mV. Iron oxide nanoparticles have been characterized by the light scattering method and transmission electron microscopy. The polyelectrolyte/iron oxide nanoparticle thin films with different numbers of iron oxide nanoparticle layers have been prepared on the surface of silicon substrates via the layer-by-layer assembly technique. The physical properties and chemical composition of nanocomposite thin films have been studied by atomic force microscopy, magnetic force microscopy, magnetization measurements, Raman spectroscopy. Using the analysis of experimental data it was established, that the magnetic properties of nanocomposite films depended on the number of iron oxide nanoparticle layers, the size of iron oxide nanoparticle aggregates, the distance between aggregates, and the chemical composition of iron oxide nanoparticles embedded into the nanocomposite films. The magnetic permeability of nanocomposite coatings has been calculated. The magnetic permeability values depend on the number of iron oxide nanoparticle layers in nanocomposite film. - Highlights: ► The magnetic properties of nanocomposite films depended on the number of iron oxide nanoparticle layers. ► The iron oxide nanoparticle phase in nanocomposite coatings is a mixture of magnetite and maghemite phases. ► The magnetite and maghemite phases depend on a number of iron oxide nanoparticle layers because the iron oxide nanoparticles are oxidized from magnetite to maghemite.

Investigation of Thin Layered Cobalt Oxide Nano-Islands on Gold

Science.gov (United States)

Bajdich, Michal; Walton, Alex S.; Fester, Jakob; Arman, Mohammad A.; Osiecki, Jacek; Knudsen, Jan; Vojvodic, Aleksandra; Lauritsen, Jeppe V.

2015-03-01

Layered cobalt oxides have been shown to be highly active catalysts for the oxygen evolution reaction (OER), but the synergistic effect of contact with gold is yet to be fully understood. The synthesis of three distinct types of thin-layered cobalt oxide nano-islands supported on a single crystal gold (111) substrate is confirmed by combination of STM and XAS methods. In this work, we present DFT+U theoretical investigation of above nano-islands using several previously known structural models. Our calculations confirm stability of two low-oxygen pressure phases: (a) rock-salt Co-O bilayer and (b) wurtzite Co-O quadlayer and single high-oxygen pressure phase: (c) O-Co-O trilayer. The optimized geometries agree with STM structures and calculated oxidation states confirm the conversion from Co2+ to Co3+ found experimentally in XAS. The O-Co-O trilayer islands have the structure of a single layer of CoOOH proposed to be the true active phase for OER catalyst. For that reason, the effect of water on the Pourbaix stabilities of basal planes and edge sites is fully investigated. Lastly, we also present the corresponding OER theoretical overpotentials.

Ni And Co Segregations On Selective Surface Facets And Rational Design Of Layered Lithium Transition-metal Oxide Cathodes

Energy Technology Data Exchange (ETDEWEB)

Yan, Pengfei; Zheng, Jianming; Zheng, Jiaxin; Wang, Zhiguo; Teng, Gaofeng; Kuppan, Saravanan; Xiao, Jie; Chen, Guoying; Zhang, Jiguang; Wang, Chong M.; Pan, Feng

2016-05-05

The chemical processes occurring on the surface of cathode materials during battery cycling play a crucial role in determining battery’s performance. However, our understanding on such surface chemistry is far from clear due to the complexity of redox chemistry during battery charge/discharge. In this work, through intensive aberration corrected STEM investigation on eight layered oxide cathode materials, we report two important findings on the pristine oxides. First, Ni and Co show strong plane selectivity when building up their respective surface segregation layers (SSL). Specifically, Ni-SSL is exclusively developed on (200)m facet in Li-Mn-rich oxides (monoclinic C2/m symmetry) and (012)h facet in Mn-Ni equally rich oxides (hexagonal R-3m symmetry), while Co-SSL has a strong preference to (20-2)m plane with minimal Co-SSL also developed on some other planes in LMR cathodes. Structurally, Ni-SSLs tend to form spinel-like lattice while Co-SSLs are in a rock-salt-like structure. Secondly, by increasing Ni concentration in these layered oxides, Ni and Co SSLs can be suppressed and even eliminated. Our findings indicate that Ni and Co SSLs are tunable through controlling particle morphology and oxide composition, which opens up a new way for future rational design and synthesis of cathode materials.

Solid oxide fuel cell cathode with oxygen-reducing layer

Science.gov (United States)

Surdoval, Wayne A.; Berry, David A.; Shultz, Travis

2018-04-03

The disclosure provides a SOFC comprised of an electrolyte, anode, and cathode, where the cathode comprises an MIEC and an oxygen-reducing layer. The oxygen-reducing layer is in contact with the MIEC, and the MIEC is generally between and separating the oxygen-reducing layer and the electrolyte. The oxygen-reducing layer is comprised of single element oxides, single element carbonates, or mixtures thereof, and has a thickness of less than about 30 nm. In a particular embodiment, the thickness is less than 5 nm. In another embodiment, the thickness is about 3 monolayers or less. The oxygen-reducing layer may be a continuous film or a discontinuous film with various coverage ratios. The oxygen-reducing layer at the thicknesses described may be generated on the MIEC surface using means known in the art such as, for example, ALD processes.

Titanium modified with layer-by-layer sol-gel tantalum oxide and an organodiphosphonic acid: a coating for hydroxyapatite growth.

Science.gov (United States)

Arnould, C; Volcke, C; Lamarque, C; Thiry, P A; Delhalle, J; Mekhalif, Z

2009-08-15

Titanium and its alloys are widely used in surgical implants due to their appropriate properties like corrosion resistance, biocompatibility, and load bearing. Unfortunately when metals are used for orthopedic and dental implants there is the possibility of loosening over a long period of time. Surface modification is a good way to counter this problem. A thin tantalum oxide layer obtained by layer-by-layer (LBL) sol-gel deposition on top of a titanium surface is expected to improve biocorrosion resistance in the body fluid, biocompatibility, and radio-opacity. This elaboration step is followed by a modification of the tantalum oxide surface with an organodiphosphonic acid self-assembled monolayer, capable of chemically binding to the oxide surface, and also improving hydroxyapatite growth. The different steps of this proposed process are characterized by surfaces techniques like contact angle, X-ray photoelectron spectroscopy (XPS), and atomic force microscopy (AFM).

Plasmonically sensitized metal-oxide electron extraction layers for organic solar cells.

Science.gov (United States)

Trost, S; Becker, T; Zilberberg, K; Behrendt, A; Polywka, A; Heiderhoff, R; Görrn, P; Riedl, T

2015-01-16

ZnO and TiOx are commonly used as electron extraction layers (EELs) in organic solar cells (OSCs). A general phenomenon of OSCs incorporating these metal-oxides is the requirement to illuminate the devices with UV light in order to improve device characteristics. This may cause severe problems if UV to VIS down-conversion is applied or if the UV spectral range (λ work, silver nanoparticles (AgNP) are used to plasmonically sensitize metal-oxide based EELs in the vicinity (1-20 nm) of the metal-oxide/organic interface. We evidence that plasmonically sensitized metal-oxide layers facilitate electron extraction and afford well-behaved highly efficient OSCs, even without the typical requirement of UV exposure. It is shown that in the plasmonically sensitized metal-oxides the illumination with visible light lowers the WF due to desorption of previously ionosorbed oxygen, in analogy to the process found in neat metal oxides upon UV exposure, only. As underlying mechanism the transfer of hot holes from the metal to the oxide upon illumination with hν < Eg is verified. The general applicability of this concept to most common metal-oxides (e.g. TiOx and ZnO) in combination with different photoactive organic materials is demonstrated.

Effect of native oxide layers on copper thin-film tensile properties: A reactive molecular dynamics study

Energy Technology Data Exchange (ETDEWEB)

Skarlinski, Michael D., E-mail: michael.skarlinski@rochester.edu [Materials Science Program, University of Rochester, Rochester, New York 14627 (United States); Quesnel, David J. [Materials Science Program, University of Rochester, Rochester, New York 14627 (United States); Department of Mechanical Engineering, University of Rochester, Rochester, New York 14627 (United States)

2015-12-21

Metal-oxide layers are likely to be present on metallic nano-structures due to either environmental exposure during use, or high temperature processing techniques such as annealing. It is well known that nano-structured metals have vastly different mechanical properties from bulk metals; however, difficulties in modeling the transition between metallic and ionic bonding have prevented the computational investigation of the effects of oxide surface layers. Newly developed charge-optimized many body [Liang et al., Mater. Sci. Eng., R 74, 255 (2013)] potentials are used to perform fully reactive molecular dynamics simulations which elucidate the effects that metal-oxide layers have on the mechanical properties of a copper thin-film. Simulated tensile tests are performed on thin-films while using different strain-rates, temperatures, and oxide thicknesses to evaluate changes in yield stress, modulus, and failure mechanisms. Findings indicate that copper-thin film mechanical properties are strongly affected by native oxide layers. The formed oxide layers have an amorphous structure with lower Cu-O bond-densities than bulk CuO, and a mixture of Cu{sub 2}O and CuO charge character. It is found that oxidation will cause modifications to the strain response of the elastic modulii, producing a stiffened modulii at low temperatures (<75 K) and low strain values (<5%), and a softened modulii at higher temperatures. While under strain, structural reorganization within the oxide layers facilitates brittle yielding through nucleation of defects across the oxide/metal interface. The oxide-free copper thin-film yielding mechanism is found to be a tensile-axis reorientation and grain creation. The oxide layers change the observed yielding mechanism, allowing for the inner copper thin-film to sustain an FCC-to-BCC transition during yielding. The mechanical properties are fit to a thermodynamic model based on classical nucleation theory. The fit implies that the oxidation of the

Layered assembly of graphene oxide and Co-Al layered double hydroxide nanosheets as electrode materials for supercapacitors.

Science.gov (United States)

Wang, Lei; Wang, Dong; Dong, Xin Yi; Zhang, Zhi Jun; Pei, Xian Feng; Chen, Xin Jiang; Chen, Biao; Jin, Jian

2011-03-28

An innovative strategy of fabricating electrode material by layered assembling two kinds of one-atom-thick sheets, carboxylated graphene oxide (GO) and Co-Al layered double hydroxide nanosheet (Co-Al LDH-NS) for the application as a pseudocapacitor is reported. The Co-Al LDH-NS/GO composite exhibits good energy storage properties.

Glow discharge mass spectrometry study of chemical impurities diffusion in zirconium oxide layers

International Nuclear Information System (INIS)

Actis-Dato, L.O.

2000-02-01

In the Pressurised Water Reactors (PWR) the primary cooling system is water at 350 deg C and 16 Mpa. In these extreme conditions the corrosion of the out-of-pile components of the reactor and in particular of the Zircaloy cladding containing the nuclear fuel pellets is accelerated. The formation of a growing oxide layer is observed on the elements of the nuclear reactor core. When the thickness of the oxide layer reaches a critical value, problems like structural malfunction and material failure can occur. At this stage the danger of the release of radioactivity in the coolant becomes effective. In this work a glow discharge mass spectrometer is used to study the diffusion of impurities like lithium, zinc and boron in oxide layers growing on Zircaloy samples. After a brief description of the different technique used the preparation and analysis of Zircaloy samples on which oxide layers of different thickness have been produced will be described. The analysis of these samples will allow the determination and evaluation the depth profiles of the impurities absorbed by the oxide. The analysis of the shape of the crater produced during the mass spectrometric analysis will give additional informations on the quality of the results obtained. The technique developed will finally be applied to the study of samples produced during reactor operation under real irradiation conditions. The results obtained show a lithium intake in the oxide layer and confirm the beneficial effect on the corrosion produced by boron. The influence of zinc on the corrosion behaviour of Zircaloy has not been established. The technique developed has also shown interesting capabilities concerning the analysis of irradiated samples. (author)

Usage of neural network to predict aluminium oxide layer thickness.

Science.gov (United States)

Michal, Peter; Vagaská, Alena; Gombár, Miroslav; Kmec, Ján; Spišák, Emil; Kučerka, Daniel

2015-01-01

This paper shows an influence of chemical composition of used electrolyte, such as amount of sulphuric acid in electrolyte, amount of aluminium cations in electrolyte and amount of oxalic acid in electrolyte, and operating parameters of process of anodic oxidation of aluminium such as the temperature of electrolyte, anodizing time, and voltage applied during anodizing process. The paper shows the influence of those parameters on the resulting thickness of aluminium oxide layer. The impact of these variables is shown by using central composite design of experiment for six factors (amount of sulphuric acid, amount of oxalic acid, amount of aluminium cations, electrolyte temperature, anodizing time, and applied voltage) and by usage of the cubic neural unit with Levenberg-Marquardt algorithm during the results evaluation. The paper also deals with current densities of 1 A · dm(-2) and 3 A · dm(-2) for creating aluminium oxide layer.

Usage of Neural Network to Predict Aluminium Oxide Layer Thickness

Directory of Open Access Journals (Sweden)

Peter Michal

2015-01-01

Full Text Available This paper shows an influence of chemical composition of used electrolyte, such as amount of sulphuric acid in electrolyte, amount of aluminium cations in electrolyte and amount of oxalic acid in electrolyte, and operating parameters of process of anodic oxidation of aluminium such as the temperature of electrolyte, anodizing time, and voltage applied during anodizing process. The paper shows the influence of those parameters on the resulting thickness of aluminium oxide layer. The impact of these variables is shown by using central composite design of experiment for six factors (amount of sulphuric acid, amount of oxalic acid, amount of aluminium cations, electrolyte temperature, anodizing time, and applied voltage and by usage of the cubic neural unit with Levenberg-Marquardt algorithm during the results evaluation. The paper also deals with current densities of 1 A·dm−2 and 3 A·dm−2 for creating aluminium oxide layer.

Effect of ultrathin GeOx interfacial layer formed by thermal oxidation on Al2O3 capped Ge

International Nuclear Information System (INIS)

Han Le; Zhang Xiong; Wang Sheng-Kai; Xue Bai-Qing; Liu Hong-Gang; Wu Wang-Ran; Zhao Yi

2014-01-01

We propose a modified thermal oxidation method in which an Al 2 O 3 capping layer is used as an oxygen blocking layer (OBL) to form an ultrathin GeO x interfacial layer, and obtain a superior Al 2 O 3 /GeO x /Ge gate stack. The GeO x interfacial layer is formed in oxidation reaction by oxygen passing through the Al 2 O 3 OBL, in which the Al 2 O 3 layer could restrain the oxygen diffusion and suppress the GeO desorption during thermal treatment. The thickness of the GeO x interfacial layer would dramatically decrease as the thickness of Al 2 O 3 OBL increases, which is beneficial to achieving an ultrathin GeO x interfacial layer to satisfy the demand for small equivalent oxide thickness (EOT). In addition, the thickness of the GeO x interfacial layer has little influence on the passivation effect of the Al 2 O 3 /Ge interface. Ge (100) p-channel metal–oxide–semiconductor field-effect transistors (pMOSFETs) using the Al 2 O 3 /GeO x /Ge gate stacks exhibit excellent electrical characteristics; that is, a drain current on-off (I on /I off ) ratio of above 1×10 4 , a subthreshold slope of ∼ 120 mV/dec, and a peak hole mobility of 265 cm 2 /V·s are achieved. (condensed matter: structural, mechanical, and thermal properties)

Electrostatic layer-by-layer a of platinum-loaded multiwall carbon nanotube multilayer: A tunable catalyst film for anodic methanol oxidation

International Nuclear Information System (INIS)

Yuan Junhua; Wang Zhijuan; Zhang Yuanjian; Shen Yanfei; Han Dongxue; Zhang Qixian; Xu Xiaoyu; Niu Li

2008-01-01

A simple layer-by-layer (LBL) electrostatic adsorption technique was developed for deposition of films composed of alternating layers of positively charged poly(diallyldimethylammonium chloride) (PDDA) and negatively charged multiwall carbon nanotubes bearing platinum nanoparticles (Pt-CNTs). PDDA/Pt-CNT film structure and morphology up to six layers were characterized by scanning electron microscopy and ultraviolet-visible spectroscopy, showing the Pt-CNT layers to be porous and uniformly deposited within the multilayer films. Electrochemical properties of the PDDA/Pt-CNT films, as well as electrocatalytic activity toward methanol oxidation, were investigated with cyclic voltammetry. Significant activity toward anodic methanol oxidation was observed and is readily tunable through changing film thickness and/or platinum-nanoparticle loading. Overall, the observed properties of these PDDA/Pt-CNT multilayer films indicated unique potential for application in direct methanol fuel cell

Highly Sensitive and Selective Sensor Chips with Graphene-Oxide Linking Layer

DEFF Research Database (Denmark)

Stebunov, Yury V.; Aftenieva, Olga A.; Arsenin, Aleksey V.

2015-01-01

sensor chip for SPR biosensors based on graphene-oxide linking layers. The biosensing assay model was based on a graphene oxide film containing streptavidin. The proposed sensor chip has three times higher sensitivity than the carboxymethylated dextran surface of a commercial sensor chip. Moreover...

Improvement of corrosion resistance of transparent conductive multilayer coating consisting of silver layers and transparent metal oxide layers

International Nuclear Information System (INIS)

Koike, Katsuhiko; Yamazaki, Fumiharu; Okamura, Tomoyuki; Fukuda, Shin

2007-01-01

An optical filter for plasma display panel (PDP) requires an electromagnetic shield with very high ability. The authors investigated a transparent conductive multilayer coating consisting of silver (Ag) layers and transparent metal oxide layers. The durability of the multilayer sputter coating, including the silver layer, is very sensitive to the surrounding atmosphere. For example, after an exposure test they found discolored points on the multilayer sputter coatings, possibly caused by migration of silver atoms in the silver layers. In their investigation, they modified the top surface of the multilayer sputter coatings with transition metals to improve the corrosion resistance of the multilayer coating. Specifically, they deposited transition metals 0.5-2 nm thick on the top surface of the multilayer coatings by sputtering. They chose indium tin oxide (ITO) as the transparent metal oxide. They applied the multilayer sputter coatings of seven layers to a polyethylene terephthalate (PET) film substrate. A cross-sectional structure of the film with the multilayer coatings is PET film/ITO/Ag/ITO/Ag/ITO/Ag/ITO. They evaluated the corrosion resistance of the films by a salt-water immersion test. In the test, they immersed the film with multilayer coatings into salt water, and then evaluated the appearance, transmittance, and electrical resistance of the multilayer coatings. They investigated several transition metals as the modifying material, and found that titanium and tantalum drastically improved the resistance of the multilayer coatings to the salt-water exposure without a significant decline in transmittance. They also investigated the relation between elapsed time after deposition of the modifying materials and resistance to the salt water. Furthermore, they investigated the effects of a heat treatment and an oxide plasma treatment on resistance to the salt water

An unusual temperature dependence in the oxidation of oxycarbide layers on uranium

Science.gov (United States)

Ellis, Walton P.

1981-09-01

An anomalous temperature dependence has been observed for the oxidation kinetics of outermost oxycarbide layers on polycrystalline uranium metal. Normally, oxidation or corrosion reactions are expected to proceed more rapidly as the temperature is elevated. Thus, it came as a surprise when we observed that the removal of the outermost atomic layers of carbon from uranium oxycarbide by O 2 reproducibly proceeds at a much faster rate at 25°C than at 280°C.

Multi-layer thin-film electrolytes for metal supported solid oxide fuel cells

Science.gov (United States)

Haydn, Markus; Ortner, Kai; Franco, Thomas; Uhlenbruck, Sven; Menzler, Norbert H.; Stöver, Detlev; Bräuer, Günter; Venskutonis, Andreas; Sigl, Lorenz S.; Buchkremer, Hans-Peter; Vaßen, Robert

2014-06-01

A key to the development of metal-supported solid oxide fuel cells (MSCs) is the manufacturing of gas-tight thin-film electrolytes, which separate the cathode from the anode. This paper focuses the electrolyte manufacturing on the basis of 8YSZ (8 mol.-% Y2O3 stabilized ZrO2). The electrolyte layers are applied by a physical vapor deposition (PVD) gas flow sputtering (GFS) process. The gas-tightness of the electrolyte is significantly improved when sequential oxidic and metallic thin-film multi-layers are deposited, which interrupt the columnar grain structure of single-layer electrolytes. Such electrolytes with two or eight oxide/metal layers and a total thickness of about 4 μm obtain leakage rates of less than 3 × 10-4 hPa dm3 s-1 cm-2 (Δp: 100 hPa) at room temperature and therefore fulfill the gas tightness requirements. They are also highly tolerant with respect to surface flaws and particulate impurities which can be present on the graded anode underground. MSC cell tests with double-layer and multilayer electrolytes feature high power densities more than 1.4 W cm-2 at 850 °C and underline the high potential of MSC cells.

ZIF-67-derived hollow nanocages with layered double oxides shell as high-Efficiency catalysts for CO oxidation

Science.gov (United States)

Kong, Wenpeng; Li, Jing; Chen, Yao; Ren, Yuqing; Guo, Yonghua; Niu, Shengli; Yang, Yanzhao

2018-04-01

Constructing non-precious hybrid metal oxides with specific morphology as cost-effective and highly efficient catalysts is a promising way for the automotive exhaust purification. In this work, we report a facile strategy for the fabrication of a unique hollow Co-Ni layered double oxides (HLDO) nanocages by using zeolitic imidazole frameworks (ZIFs) as template. The synthesis of intermediate core-shell and hollow Co-Ni layered double hydroxides (HLDH) nanoflakes as well as the corresponding Co-Ni oxides products were successfully controlled, and the formation process was also explained. Among ZIF-67-derived oxides, HLDO exhibits excellent catalytic activities (complete conversion of CO into CO2 at 118 °C) and long-term stability for CO oxidation. The remarkable catalytic activities of HLDO can be attributed to high surface area (258 m2 g-1) inherited from the HLDH, which could provide more active sites for CO oxidation. In addition, active oxygen species indicated by the O 1 s XPS spectrum and improved synergistic effect between NiO and Co3O4 reflected by H2-TPR, further explain the enhanced performance of the HLDO catalysts. The presented strategy for controlled design and synthesis of hollow multicomponent metal oxides will provide prospects in developing highly effective catalysts.

Influence of annealing conditions on anodic tungsten oxide layers and their photoelectrochemical activity

International Nuclear Information System (INIS)

Syrek, Karolina; Zych, Marta; Zaraska, Leszek; Sulka, Grzegorz D.

2017-01-01

Highlights: • Effect of annealing temperature on the morphology and crystalline structure of anodic WO 3 was investigated. • Photoelectrochemical properties of WO 3 layers annealed at different temperatures were studied. • Edges of conduction and valence bands were estimated for tungsten oxide layers annealed at different temperatures. • Influence of annealing time on crystalline structure, morphology and photoelectrochemical performance was studied. - Abstract: The nanoporous tungsten oxide films having an amorphous structure were prepared in an electrolyte containing fluoride ions via an anodization process. The as-synthesized anodic oxide layers can be easily converted to the monoclinic WO 3 phase upon annealing in air. The as-synthesized and annealed WO 3 layers were investigated by using X-ray diffraction, scanning electron microscopy, and photocurrent spectroscopy. The effect of annealing temperature and annealing time on the oxide morphology, crystal structure and electrochemical properties were studied. The samples were annealed in air at the temperatures ranging from 400 to 600 °C, and it was found that the original porous morphology of oxide is completely lost after annealing at 600 °C. The changes in the average crystallite sizes upon annealing were confirmed by XRD measurements. The photoelectrochemical performance of the annealed WO 3 layers were studied under pulsed UV illumination, and the highest photocurrents were observed at the incident light wavelength of 350 nm for the sample annealed at 500 °C for 2 h. The band gap energy and the positions of conduction and valence band edges were determined for all studied samples.

Constructing oxide interfaces and heterostructures by atomic layer-by-layer laser molecular beam epitaxy

OpenAIRE

Lei, Qingyu; Golalikhani, Maryam; Davidson, Bruce A.; Liu, Guozhen; Schlom, D. G.; Qiao, Qiao; Zhu, Yimei; Chandrasena, Ravini U.; Yang, Weibing; Gray, Alexander X.; Arenholz, Elke; Farrar, Andrew K.; Tenne, Dmitri A.; Hu, Minhui; Guo, Jiandong

2016-01-01

Advancements in nanoscale engineering of oxide interfaces and heterostructures have led to discoveries of emergent phenomena and new artificial materials. Combining the strengths of reactive molecular-beam epitaxy and pulsed-laser deposition, we show here, with examples of Sr1+xTi1-xO3+delta, Ruddlesden-Popper phase Lan+1NinO3n+1 (n = 4), and LaAl1+yO3(1+0.5y)/SrTiO3 interfaces, that atomic layer-by-layer laser molecular-beam epitaxy (ALL-Laser MBE) significantly advances the state of the art...

Impact of future nitrous oxide and carbon dioxide emissions on the stratospheric ozone layer

International Nuclear Information System (INIS)

Stolarski, Richard S; Waugh, Darryn W; Douglass, Anne R; Oman, Luke D

2015-01-01

The atmospheric levels of human-produced chlorocarbons and bromocarbons are projected to make only small contributions to ozone depletion by 2100. Increases in carbon dioxide (CO 2 ) and nitrous oxide (N 2 O) will become increasingly important in determining the future of the ozone layer. N 2 O increases lead to increased production of nitrogen oxides (NO x ), contributing to ozone depletion. CO 2 increases cool the stratosphere and affect ozone levels in several ways. Cooling decreases the rate of many photochemical reactions, thus slowing ozone loss rates. Cooling also increases the chemical destruction of nitrogen oxides, thereby moderating the effect of increased N 2 O on ozone depletion. The stratospheric ozone level projected for the end of this century therefore depends on future emissions of both CO 2 and N 2 O. We use a two-dimensional chemical transport model to explore a wide range of values for the boundary conditions for CO 2 and N 2 O, and find that all of the current scenarios for growth of greenhouse gases project the global average ozone to be larger in 2100 than in 1960. (letter)

Aspirin increases mitochondrial fatty acid oxidation

International Nuclear Information System (INIS)

Uppala, Radha; Dudiak, Brianne; Beck, Megan E.; Bharathi, Sivakama S.; Zhang, Yuxun; Stolz, Donna B.; Goetzman, Eric S.

2017-01-01

The metabolic effects of salicylates are poorly understood. This study investigated the effects of aspirin on fatty acid oxidation. Aspirin increased mitochondrial long-chain fatty acid oxidation, but inhibited peroxisomal fatty acid oxidation, in two different cell lines. Aspirin increased mitochondrial protein acetylation and was found to be a stronger acetylating agent in vitro than acetyl-CoA. However, aspirin-induced acetylation did not alter the activity of fatty acid oxidation proteins, and knocking out the mitochondrial deacetylase SIRT3 did not affect the induction of long-chain fatty acid oxidation by aspirin. Aspirin did not change oxidation of medium-chain fatty acids, which can freely traverse the mitochondrial membrane. Together, these data indicate that aspirin does not directly alter mitochondrial matrix fatty acid oxidation enzymes, but most likely exerts its effects at the level of long-chain fatty acid transport into mitochondria. The drive on mitochondrial fatty acid oxidation may be a compensatory response to altered mitochondrial morphology and inhibited electron transport chain function, both of which were observed after 24 h incubation of cells with aspirin. These studies provide insight into the pathophysiology of Reye Syndrome, which is known to be triggered by aspirin ingestion in patients with fatty acid oxidation disorders. - Highlights: • Aspirin increases mitochondrial—but inhibits peroxisomal—fatty acid oxidation. • Aspirin acetylates mitochondrial proteins including fatty acid oxidation enzymes. • SIRT3 does not influence the effect of aspirin on fatty acid oxidation. • Increased fatty acid oxidation is likely due to altered mitochondrial morphology and respiration.

Growth of micrometric oxide layers for the study of metallic surfaces decontamination by laser

OpenAIRE

Carvalho Luisa; Pacquentin Wilfried; Tabarant Michel; Maskrot Hicham; Semerok Alexandre

2017-01-01

The nuclear industry produces a wide range of radioactive waste in term of level of hazard, contaminants and material. For metallic equipment like steam generators, the radioactivity is mainly located in the oxide surface. In order to study and develop techniques for dismantling and for decontamination in a safe way, it is important to have access to oxide layers with a representative distribution of non-radioactive contaminants. We propose a method of formation of oxide layer on stainless st...

Improvement of Self-Heating of Indium Gallium Zinc Aluminum Oxide Thin-Film Transistors Using Al2O3 Barrier Layer

Science.gov (United States)

Jian, Li-Yi; Lee, Hsin-Ying; Lin, Yung-Hao; Lee, Ching-Ting

2018-02-01

To study the self-heating effect, aluminum oxide (Al2O3) barrier layers of various thicknesses have been inserted between the channel layer and insulator layer in bottom-gate-type indium gallium zinc aluminum oxide (IGZAO) thin-film transistors (TFTs). Each IGZAO channel layer was deposited on indium tin oxide (ITO)-coated glass substrate by using a magnetron radiofrequency cosputtering system with dual targets composed of indium gallium zinc oxide (IGZO) and Al. The 3 s orbital of Al cation provided an extra transport pathway and widened the conduction-band bottom, thus increasing the electron mobility of the IGZAO films. The Al-O bonds were able to sustain the oxygen stability of the IGZAO films. The self-heating behavior of the resulting IGZAO TFTs was studied by Hall measurements on the IGZAO films as well as the electrical performance of the IGZAO TFTs with Al2O3 barrier layers of various thicknesses at different temperatures. IGZAO TFTs with 50-nm-thick Al2O3 barrier layer were stressed by positive gate bias stress (PGBS, at gate-source voltage V GS = 5 V and drain-source voltage V DS = 0 V); at V GS = 5 V and V DS = 10 V, the threshold voltage shifts were 0.04 V and 0.2 V, respectively, much smaller than for the other IGZAO TFTs without Al2O3 barrier layer, which shifted by 0.2 V and 1.0 V when stressed under the same conditions.

Effect of annealing and oxide layer thickness on doping profiles shape of ''through-oxide'' implanted P+ ions in textured silicon

International Nuclear Information System (INIS)

El-Dessouki, M.S.; Galloni, R.

1987-10-01

Phosphorous ions at energies of 60+100 KeV, and doses (4+5)x10 15 atom/cm 2 have been implanted randomly through SiO 2 layers into textured silicon crystals. The penetration profiles of the P + ions have been determined by means of differential sheet resistivity and Hall-effect, together with the anodic oxidation stripping technique. The effect of the oxide layer thickness, annealing temperature on the junction properties has been studied. The damage produced by implantation, has also been investigated using transmission electron microscope (TEM). From the mobility measurements of the free carriers as a function of depth through the junction, two minima have been observed in through oxide implanted samples. The one nearer to the Si-SiO 2 interface (at about 200A from the interface) was related to the damage produced by the recoil oxygen atoms from the oxide layer into silicon. The deeper minimum is lying at ∼ 0.2μm from the interface and was attributed to the damage produced by the implanted P + ions, which caused clusters and defect loops after annealing. This damage was observed through TEM photographs. The optimum conditions for producing shallow junction without losing much of the implanted P + ions through the oxide layer were estimated. (author). 22 refs, 7 figs, 1 tab

Formation and electrical characteristics of silicon dioxide layers by use of nitric acid oxidation method

International Nuclear Information System (INIS)

Imal, S.; Takahashi, M.; Matsuba, K.; Asuha; Ishikawa, Y.; Kobayashi, Hikaru

2005-01-01

SiO 2 /Si structure can be formed at low temperatures by use of nitric acid (HNO 3 ) oxidation of Si (NAOS) method. When Si wafers are immersed in ∼ 40 wt% HNO 3 solutions at 108 deg C, ∼ 1 nm SiO 2 layers are formed. The subsequent immersion in 68 wt% HNO 3 (i.e., azeotropic mixture of HNO 3 with water) at 121 deg C increases the SiO 2 thickness. The 3,5 nm-thick SiO 2 layers produced by this two-step NAOS method possess a considerably low leakage current density (e.g. 1 x 10 2 A/cmi 2 at the forward gate bias, V G , of 1.5 V), in spite of the low temperature oxidation, and further decreased (e.g., 8 x 10 4 A/cm 2 at V G = 1.5 V) by post-metallization annealing at 250 deg C in hydrogen atmosphere. In order to increase the SiO 2 thickness, a bias voltage is applied during the NAOS method. When 10 V is applied to Si with respect to a Pt counter electrode both immersed in 1 M HNO 3 solutions at 25 deg C, SiO 2 layers with 8 nm thickness can be formed for 1 h(Authors)

Effects of Complex Structured Anodic Oxide Dielectric Layer Grown in Pore Matrix for Aluminum Capacitor.

Science.gov (United States)

Shin, Jin-Ha; Yun, Sook Young; Lee, Chang Hyoung; Park, Hwa-Sun; Suh, Su-Jeong

2015-11-01

Anodization of aluminum is generally divided up into two types of anodic aluminum oxide structures depending on electrolyte type. In this study, an anodization process was carried out in two steps to obtain high dielectric strength and break down voltage. In the first step, evaporated high purity Al on Si wafer was anodized in oxalic acidic aqueous solution at various times at a constant temperature of 5 degrees C. In the second step, citric acidic aqueous solution was used to obtain a thickly grown sub-barrier layer. During the second anodization process, the anodizing potential of various ranges was applied at room temperature. An increased thickness of the sub-barrier layer in the porous matrix was obtained according to the increment of the applied anodizing potential. The microstructures and the growth of the sub-barrier layer were then observed with an increasing anodizing potential of 40 to 300 V by using a scanning electron microscope (SEM). An impedance analyzer was used to observe the change of electrical properties, including the capacitance, dissipation factor, impedance, and equivalent series resistance (ESR) depending on the thickness increase of the sub-barrier layer. In addition, the breakdown voltage was measured. The results revealed that dielectric strength was improved with the increase of sub-barrier layer thickness.

Effect of biomolecules adsorption on oxide layers developed on metallic materials used in cooling water systems

International Nuclear Information System (INIS)

Torres-Bautista, Blanca-Estela

2014-01-01

This thesis was carried out in the frame of the BIOCOR ITN European project, in collaboration with the industrial partner RSE S.p.A. (Italy). Metallic materials commonly used in cooling systems of power plants may be affected by bio-corrosion induced by biofilm formation. The objective of this work was to study the influence of biomolecules adsorption, which is the initial stage of biofilm formation, on the electrochemical behaviour and the surface chemical composition of three metallic materials (70Cu-30Ni alloy, 304L stainless steel and titanium) in seawater environments. In a first step, the interactions between a model protein, the bovine serum albumin (BSA), and the surface of these materials were investigated. Secondly, tightly bound (TB) and loosely bound (LB) extracellular polymeric substances (EPS), that play a fundamental role in the different stages of biofilm formation, maturation and maintenance, were extracted from Pseudomonas NCIMB 2021 marine strain, and their effects on oxide layers were also evaluated. For that purpose, electrochemical measurements (corrosion potential E(corr) vs time, polarization curves and electrochemical impedance spectroscopy (EIS)) performed during the very first steps of oxide layers formation (1 h immersion time) were combined to surface analysis by X-ray photoelectron spectroscopy (XPS) and time-of-flight secondary ions mass spectrometry (ToF-SIMS). Compared to 70Cu-30Ni alloy in static artificial seawater (ASW) without biomolecules, for which a thick duplex oxide layer (outer redeposited Cu 2 O layer and inner oxidized nickel layer) is shown, the presence of BSA, TB EPS and LB EPS leads to a mixed oxide layer (oxidized copper and nickel) with a lower thickness. In the biomolecules-containing solutions, this oxide layer is covered by an adsorbed organic layer, mainly composed of proteins. A model is proposed to analyse impedance data obtained at E(corr). The results show a slow-down of the anodic reaction in the presence

Change of the work function and potential barrier transparency of W(100) and GaAs(110) single crystals during removing the inherent surface oxide layer

International Nuclear Information System (INIS)

Asalkhanov, Yu.I.; Saneev, Eh.L.

2002-01-01

Changes of current voltage characteristics of slow monoenergetic electron beam through the surfaces of W(100) and GaAs(100) single crystals have been measured in the process of surface oxide layers elimination. It is shown that work function is decreased and transparency coefficient of surface potential barrier is increased under increasing the temperature of vacuum annealing. Peculiarities of surface potential change under oxide layer elimination in metals and semiconductors are discussed [ru

Tunable band structures in digital oxides with layered crystal habits

Science.gov (United States)

Shin, Yongjin; Rondinelli, James M.

2017-11-01

We use density functional calculations to show that heterovalent cation-order sequences enable control over band-gap variations up to several eV and band-gap closure in the bulk band insulator LaSrAlO4. The band-gap control originates from the internal electric fields induced by the digital chemical order, which induces picoscale band bending; the electric-field magnitude is mainly governed by the inequivalent charged monoxide layers afforded by the layered crystal habit. Charge transfer and ionic relaxations across these layers play secondary roles. This understanding is used to construct and validate a descriptor that captures the layer-charge variation and to predict changes in the electronic gap in layered oxides exhibiting antisite defects and in other chemistries.

Fabrication of birnessite-type layered manganese oxide films for super capacitors

Energy Technology Data Exchange (ETDEWEB)

Zhou, Y.K.; Dorval-Douville, G.; Favier, F. [Montpellier-2 Univ., LAMMI, UMR CNRS 5072, 34 (France)

2004-07-01

Birnessite-type layered manganese oxide films were anodically deposited at the surface of an inexpensive stainless steel. MnSO{sub 4} plating solutions were used at various potentials and for various durations. X-ray diffraction and scanning electron microscopy were used to examine the material structure and surface morphologies of obtained manganese oxide films. The capacitive characteristics and stability of these oxides were systematically investigated by means of cyclic voltammetry method in aqueous electrolytes. Deposition conditions affected the oxides structure and morphologies, and consequently greatly affected their electrochemical capacitance performance. (authors)

Multi-layered zinc oxide-graphene composite thin films for selective nitrogen dioxide sensing

Science.gov (United States)

Ghosh, A.; Bhowmick, T.; Majumder, S. B.

2018-02-01

In the present work, selective nitrogen dioxide (NO2) sensing characteristics of multi-layered graphene-zinc oxide (G-ZnO) thin films have been demonstrated at 150 °C. The response% of 5 ppm NO2 was measured to be 894% with response and recovery times estimated to be 150 s and 315 s, respectively. In these composite films, the interaction between graphene and zinc oxide is established through X-ray photoelectron spectroscopy in conjunction with the analyses of photoluminescence spectra. Superior NO2 sensing of these films is due to simultaneous chemiadsorption of molecular oxygen and NO2 gases onto graphene and ZnO surfaces, resulting in an appreciable increase in the depletion layer width and thereby the sensor resistance. The sensor responses for other reducing gases (viz., CO, H2, and i-C4H10) are postulated to be due to their catalytic oxidation on the sensor surface, resulting in a decrease in the sensor resistance upon gas exposure. At lower operating temperature, due to the molecular nature of the chemiadsorbed oxygen, poor catalytic oxidation leads to a far lower sensor response for reducing gases as compared to NO2. For mixed NO2 and reducing gas sensing, we have reported that fast Fourier transformation of the resistance transients of all these gases in conjunction with principal component analyses forms a reasonably distinct cluster and, therefore, could easily be differentiated.

Application of high-pressure techniques: stabilization and oxidation-state control of novel superconductive and related multi-layered copper oxides

International Nuclear Information System (INIS)

Yamauchi, H.; Karppinen, M.

2000-01-01

Copper oxide superconductors possess multi-layered structures with a layer sequence of -CuO 2 -(Q-CuO 2 ) n-1 -AO-(MO 1±δ ) m -AO- or -CuO 2 -B-(O 2 -B) s-1 -CuO 2 -AO-(MO 1±δ ) m -AO- along the elongated c axis. Based on this layer sequence, the known copper oxide structures are categorized as members of the homologous series, M m A r Q n-1 Cu n O m+r+2 +n ±δ (M-mr(n-1)n ; category A) or M m A 2k B s Cu 1+k O m +4k +2s±δ (M-m(2k)s (1+k ); category B). Stabilization of such structures especially in the case of high values of the n /s parameter, i.e. the higher members of the homologous series, has been demonstrated to be apparently promoted under high pressures and/or strongly oxidizing conditions. Consequently, techniques for applying both high oxygen gas pressures (10-2000 atm) and ultra-high solid-medium pressures (2-8 GPa) have been advantageously utilized in synthesizing various superconductive copper oxide phases. Especially the ultra-high solid-medium pressure synthesis carried out in the so-called cubic-anvil/belt-type apparatus has proven to be extremely successful in synthesizing novel superconductive phases. In order to achieve high partial pressures of oxygen in the solid-medium environment, 'external' oxygen-generating oxides such as KClO 4 , KClO 3 and Ag 2 O 2 are commonly added to the precursor mixtures. It is emphasized that in some cases it is possible to utilize 'internal' oxidizing agents alone, i.e. highly oxidized precursors such as BaCuO 2+δ and Ba 2 Cu 3 O 5+δ containing metal constituents common with the desired copper oxide phase only. In the present paper, the potential and applications of high-pressure techniques in synthesizing multi-layered copper oxides and related structures are reviewed and discussed with emphasis on the important 'historical' discoveries of novel phases and the present status of controlled production of high-quality samples of such phases. (author)

Measurement of oxide-layer thickness of internal granules in high-purity aluminium

International Nuclear Information System (INIS)

Takacs, S.; Ditroi, F.; Mahunka, I.

1989-01-01

Charged-particle activation analysis was used for the determination of bulk oxygen concentration in aluminium. High-purity aluminium samples and mixtures containing different amounts of alumina were irradiated by 13 MeV 3 He particles. The aim of the investigation was to determine the oxide-layer thickness on the surface of internal aluminium granules. The measurement was carried out by determining the bulk oxygen concentration in the samples, and calculating the oxide-layer thickness, by using model conditions about the microstructure of the aluminium samples. (author) 5 refs

WO3 and W Thermal Atomic Layer Etching Using "Conversion-Fluorination" and "Oxidation-Conversion-Fluorination" Mechanisms.

Science.gov (United States)

Johnson, Nicholas R; George, Steven M

2017-10-04

The thermal atomic layer etching (ALE) of WO 3 and W was demonstrated with new "conversion-fluorination" and "oxidation-conversion-fluorination" etching mechanisms. Both of these mechanisms are based on sequential, self-limiting reactions. WO 3 ALE was achieved by a "conversion-fluorination" mechanism using an AB exposure sequence with boron trichloride (BCl 3 ) and hydrogen fluoride (HF). BCl 3 converts the WO 3 surface to a B 2 O 3 layer while forming volatile WO x Cl y products. Subsequently, HF spontaneously etches the B 2 O 3 layer producing volatile BF 3 and H 2 O products. In situ spectroscopic ellipsometry (SE) studies determined that the BCl 3 and HF reactions were self-limiting versus exposure. The WO 3 ALE etch rates increased with temperature from 0.55 Å/cycle at 128 °C to 4.19 Å/cycle at 207 °C. W served as an etch stop because BCl 3 and HF could not etch the underlying W film. W ALE was performed using a three-step "oxidation-conversion-fluorination" mechanism. In this ABC exposure sequence, the W surface is first oxidized to a WO 3 layer using O 2 /O 3 . Subsequently, the WO 3 layer is etched with BCl 3 and HF. SE could simultaneously monitor the W and WO 3 thicknesses and conversion of W to WO 3 . SE measurements showed that the W film thickness decreased linearly with number of ABC reaction cycles. W ALE was shown to be self-limiting with respect to each reaction in the ABC process. The etch rate for W ALE was ∼2.5 Å/cycle at 207 °C. An oxide thickness of ∼20 Å remained after W ALE, but could be removed by sequential BCl 3 and HF exposures without affecting the W layer. These new etching mechanisms will enable the thermal ALE of a variety of additional metal materials including those that have volatile metal fluorides.

Tungsten oxides as interfacial layers for improved performance in hybrid optoelectronic devices

International Nuclear Information System (INIS)

Vasilopoulou, M.; Palilis, L.C.; Georgiadou, D.G.; Argitis, P.; Kennou, S.; Kostis, I.; Papadimitropoulos, G.; Stathopoulos, N.A.; Iliadis, A.A.; Konofaos, N.; Davazoglou, D.; Sygellou, L.

2011-01-01

Tungsten oxide (WO 3 ) films with thicknesses ranging from 30 to 100 nm were grown by Hot Filament Vapor Deposition (HFVD). Films were studied by X-Ray Photoemission Spectroscopy (XPS) and were found to be stoichiometric. The surface morphology of the films was characterized by Atomic Force Microscopy (AFM). Samples had a granular form with grains in the order of 100 nm. The surface roughness was found to increase with film thickness. HFVD WO 3 films were used as conducting interfacial layers in advanced hybrid organic-inorganic optoelectronic devices. Hybrid-Organic Light Emitting Diodes (Hy-OLEDs) and Organic Photovoltaics (Hy-OPVs) were fabricated with these films as anode and/or as cathode interfacial conducting layers. The Hy-OLEDs showed significantly higher current density and a lower turn-on voltage when a thin WO 3 layer was inserted at the anode/polymer interface, while when inserted at the cathode/polymer interface the device performance was found to deteriorate. The improvement was attributed to a more efficient hole injection and transport from the Fermi level of the anode to the Highest Occupied Molecular Orbital (HOMO) of a yellow emitting copolymer (YEP). On the other hand, the insertion of a thin WO 3 layer at the cathode/polymer interface of Hy-OPV devices based on a polythiophene-fullerene bulk-heterojunction blend photoactive layer resulted in an increase of the produced photogenerated current, more likely due to improved electron extraction at the Al cathode.

Preparation and Investigation of the Microtribological Properties of Graphene Oxide and Graphene Films via Electrostatic Layer-by-Layer Self-Assembly

Directory of Open Access Journals (Sweden)

Yongshou Hu

2015-01-01

Full Text Available Graphene oxide (GO films with controlled layers, deposited on single-crystal silicon substrates, were prepared by electrostatic self-assembly of negatively charged GO sheets. Afterward, graphene films were prepared by liquid-phase reduction of as-prepared GO films using hydrazine hydrate. The microstructures and microtribological properties of the samples were studied using X-ray photoelectron spectroscopy, Raman spectroscopy, X-ray diffraction, UV-vis absorption spectroscopy, water contact angle measurement, and atomic force microscopy. It is found that, whether GO films or graphene films, the adhesion force and the coefficients of friction both show strong dependence on the number of self-assembled layers, which both allow a downward trend as the number of self-assembled layers increases due to the interlayer sliding and the puckering effect when the tip slipped across the top surface of the films. Moreover, in comparison with the GO films with the same self-assembled layers, the graphene films possess lower adhesion force and coefficient of friction attributed to the difference of surface functional groups.

Polymer thin film as coating layer to prevent corrosion of metal/metal oxide film

Science.gov (United States)

Sarkar, Suman; Kundu, Sarathi

2018-04-01

Thin film of polymer is used as coating layer and the corrosion of metal/metal oxide layer is studied with the variation of the thickness of the coating layer. The thin layer of polystyrene is fabricated using spin coating method on copper oxide (CuO) film which is deposited on glass substrate using DC magnetron sputtering technique. Thickness of the polystyrene and the CuO layers are determined using X-ray reflectivity (XRR) technique. CuO thin films coated with the polystyrene layer are exposed to acetic acid (2.5 v/v% aqueous CH3COOH solution) environments and are subsequently analyzed using UV-Vis spectroscopy and atomic force microscopy (AFM). Surface morphology of the film before and after interaction with the acidic environment is determined using AFM. Results obtained from the XRR and UV-Vis spectroscopy confirm that the thin film of polystyrene acts as an anticorrosion coating layer and the strength of the coating depends upon the polymer layer thickness at a constant acid concentration.

Natively textured surface hydrogenated gallium-doped zinc oxide transparent conductive thin films with buffer layers for solar cells

Energy Technology Data Exchange (ETDEWEB)

Chen, Xin-liang, E-mail: cxlruzhou@163.com; Wang, Fei; Geng, Xin-hua; Huang, Qian; Zhao, Ying; Zhang, Xiao-dan

2013-09-02

Natively textured surface hydrogenated gallium-doped zinc oxide (HGZO) thin films have been deposited via magnetron sputtering on glass substrates. These natively textured HGZO thin films exhibit rough pyramid-like textured surface, high optical transmittances in the visible and near infrared region and excellent electrical properties. The experiment results indicate that tungsten-doped indium oxide (In{sub 2}O{sub 3}:W, IWO) buffer layers can effectively improve the surface roughness and enhance the light scattering ability of HGZO thin films. The root-mean-square roughness of HGZO, IWO (10 nm)/HGZO and IWO (30 nm)/HGZO thin films are 28, 44 and 47 nm, respectively. The haze values at the wavelength of 550 nm increase from 7.0% of HGZO thin film without buffer layer to 18.37% of IWO (10 nm)/HGZO thin film. The optimized IWO (10 nm)/HGZO exhibits a high optical transmittance of 82.18% in the visible and near infrared region (λ ∼ 400–1100 nm) and excellent electrical properties with a relatively low sheet resistance of 3.6 Ω/□ and the resistivity of 6.21 × 10{sup −4} Ωcm. - Highlights: • Textured hydrogenated gallium-doped zinc oxide (HGZO) films were developed. • Tungsten-doped indium oxide (IWO) buffer layers were applied for the HGZO films. • Light-scattering ability of the HGZO films can be improved through buffer layers. • Low sheet resistance and high haze were obtained for the IWO(10 nm)/HGZO film. • The IWO/HGZO films are promising transparent conductive layers for solar cells.

Medium-Index Mixed-Oxide Layers for Use in AR-Coatings

Science.gov (United States)

Ganner, Peter

1986-10-01

Ttedesign philosophy of MC-AR-Coatings can be divided into two categories: a) Restriction to two film materials, namely one high-index and one low-index material and b) Use of medium-index layers in addition to high- and low-index layers. Both philosophies have advan-tages and drawbacks. In case a) the total number of layers necessary to obtain a required reflectance curve has to be higher. Thus in case of production errors it can be a problem to find out which layer was responsible for a deviation of the measured reflectance from the nominal one. In case b) using more than two materials reduces the total number of layers and consequently, pinpointing the cause of even small production errors is made simpler. Unfortunately there are not many materials commercially available which can be used to make hard, durable and robust films in the medium-index range namely between n=1.65 and n=2.00. In this paper the results of homogeneous mixtures of Alumina (Al203) and Tantala (Ta205) used for EB-gun evaporated medium-index films in AR-coatings is presented. It is shown that by proper adjustment of the weight percentages of the oxide mixture one can get homogeneous films in this index range. A number of design examples show the favourable application of such layers in AR-coatings. Among the most important ones is the well known QHQ-design for BBAR-coatings as well as AR-designs of the multiple half wave type with extended bandwidth. Further applications of the mixed-oxide layers are AR-coatings for cemented optical elements and beam splitters.

Total Oxidation of Ethanol over Layered Double Hydroxide-Related Mixed Oxide Catalysts: Effect of Cation Composition.

Czech Academy of Sciences Publication Activity Database

Jirátová, Květa; Kovanda, F.; Ludvíková, Jana; Balabánová, Jana; Klempa, Jan

2016-01-01

Roč. 277, NOV 15 (2016), s. 61-67 ISSN 0920-5861. [Czech-Italian-Spanish Conference on Molecular Sieves and Catalysis /16./. Amantea, 14.06.2015-17.06.2015] R&D Projects: GA ČR GA14-13750S Institutional support: RVO:67985858 Keywords : layered double hydroxides * transition metal oxides * vox oxidation Subject RIV: CI - Industrial Chemistry, Chemical Engineering Impact factor: 4.636, year: 2016

Advantages of using amorphous indium zinc oxide films for window layer in Cu(In,Ga)Se{sub 2} solar cells

Energy Technology Data Exchange (ETDEWEB)

Warasawa, Moe [Department of Electrical Engineering, Faculty of Science and Technology, Tokyo University of Science, 2641 Yamazaki, Noda 278-8510 (Japan); Kaijo, Akira [Idemitsu Kosan Co., Ltd., 1280 Kami-izumi, Sodegaura, 229-0293 (Japan); Sugiyama, Mutsumi, E-mail: mutsumi@rs.noda.tus.ac.jp [Department of Electrical Engineering, Faculty of Science and Technology, Tokyo University of Science, 2641 Yamazaki, Noda 278-8510 (Japan)

2012-01-01

The advantages of using indium zinc oxide (IZO) films instead of conventional Ga-doped zinc oxide (ZnO:Ga) films for Cu(In,Ga)Se{sub 2} (CIGS) solar cells are described. The electrical properties of IZO are independent of film thickness. IZO films have higher mobility (30-40 cm{sup 2}/Vs) and lower resistivity (4-5 Multiplication-Sign 10{sup -4} {Omega} cm) compared to ZnO:Ga films deposited without intentional heating, because the number of grain boundaries in amorphous IZO films is small. The properties of a CIGS solar cell using IZO at the window layer were better than those obtained using a conventional ZnO:Ga at the window layer; moreover, the properties tended to be independent of thickness. These results indicate that use of IZO as a transparent conducting oxide layer is expected to increase the efficiency of CIGS solar cells.

Influence of carbon monoxide to the surface layer of uranium metal and its oxides

International Nuclear Information System (INIS)

Wang Xiaoling; Fu Yibei; Xie Renshou; Huang Ruiliang

1996-09-01

The surface structures of uranium metal and triuranium octaoxide (U 3 O 8 ) and the influence of carbon monoxide to the surface layers have been studied by X-ray photoelectron spectroscopy (XPS). After exposure to carbon monoxide, contents of oxygen in the surface oxides of uranium metal and U 3 O 8 are decreased and O/U ratios decrease 7.2%, 8.0% respectively. The investigation indicated the surface layers of uranium metal and its oxides were forbidden to further oxidation in the atmosphere of carbon monoxide. (11 refs., 9 figs., 2 tabs.)

Studies of oxide-based thin-layered heterostructures by X-ray scattering methods

Energy Technology Data Exchange (ETDEWEB)

Durand, O. [Thales Research and Technology France, Route Departementale 128, F-91767 Palaiseau Cedex (France)]. E-mail: olivier.durand@thalesgroup.com; Rogers, D. [Nanovation SARL, 103 bis rue de Versailles 91400 Orsay (France); Universite de Technologie de Troyes, 10-12 rue Marie Curie, 10010 (France); Teherani, F. Hosseini [Nanovation SARL, 103 bis rue de Versailles 91400 Orsay (France); Andrieux, M. [LEMHE, ICMMOCNRS-UMR 8182, Universite d' Orsay, Batiment 410, 91410 Orsay (France); Modreanu, M. [Tyndall National Institute, Lee Maltings, Prospect Row, Cork (Ireland)

2007-06-04

Some X-ray scattering methods (X-ray reflectometry and Diffractometry) dedicated to the study of thin-layered heterostructures are presented with a particular focus, for practical purposes, on the description of fast, accurate and robust techniques. The use of X-ray scattering metrology as a routinely working non-destructive testing method, particularly by using procedures simplifying the data-evaluation, is emphasized. The model-independent Fourier-inversion method applied to a reflectivity curve allows a fast determination of the individual layer thicknesses. We demonstrate the capability of this method by reporting X-ray reflectometry study on multilayered oxide structures, even when the number of the layers constitutive of the stack is not known a-priori. Fast Fourier transform-based procedure has also been employed successfully on high resolution X-ray diffraction profiles. A study of the reliability of the integral-breadth methods in diffraction line-broadening analysis applied to thin layers, in order to determine coherent domain sizes, is also reported. Examples from studies of oxides-based thin-layers heterostructures will illustrate these methods. In particular, X-ray scattering studies performed on high-k HfO{sub 2} and SrZrO{sub 3} thin-layers, a (GaAs/AlOx) waveguide, and a ZnO thin-layer are reported.

Analysis of chemical dissolution of the barrier layer of porous oxide on aluminum thin films using a re-anodizing technique

Energy Technology Data Exchange (ETDEWEB)

Vrublevsky, I. [Department of Microelectronics, Belarusian State University of Informatics and Radioelectronics, 6 Brovka street, Minsk 220013 (Belarus)]. E-mail: nil-4-2@bsuir.edu.by; Parkoun, V. [Department of Microelectronics, Belarusian State University of Informatics and Radioelectronics, 6 Brovka street, Minsk 220013 (Belarus); Sokol, V. [Department of Microelectronics, Belarusian State University of Informatics and Radioelectronics, 6 Brovka street, Minsk 220013 (Belarus); Schreckenbach, J. [Institut fuer Chemie, Technische Universitaet Chemnitz, Chemnitz D-09107 (Germany)

2005-09-30

Chemical dissolution of the barrier layer of porous oxide formed on thin aluminum films (99.9% purity) in the 4% oxalic acid after immersion in 2 mol dm{sup -3} sulphuric acid at 50 deg. C has been studied. The barrier layer thickness before and after dissolution was calculated using a re-anodizing technique. It has been shown that above 57 V the change in the growth mechanism of porous alumina films takes place. As a result, the change in the amount of regions in the barrier oxide with different dissolution rates is observed. The barrier oxide contains two layers at 50 V: the outer layer with the highest dissolution rate and the inner layer with a low dissolution rate. Above 60 V the barrier oxide contains three layers: the outer layer with a high dissolution rate, the middle layer with the highest dissolution rate and the inner layer with a low dissolution rate. We suggest that the formation of the outer layer of barrier oxide with a high dissolution rate is linked with the injection of protons or H{sub 3}O{sup +} ions from the electrolyte into the oxide film at the anodizing voltages above 57 V.

Study of diffusion processes in the oxide layer of zirconium alloys

Directory of Open Access Journals (Sweden)

Sialini P.

2016-03-01

Full Text Available In the active zone of a nuclear reactor where zirconium alloys are used as a coating material, this material is subject to various harmful impacts. During water decomposition reactions, hydrogen and oxygen are evolved that may diffuse through the oxidic layer either through zirconium dioxide (ZrO2 crystals or along ZrO2 grains. The diffusion mechanism can be studied using the Ion Beam Analysis (IBA method where nuclear reaction 18O(p,α15N is used. A tube made of zirconium alloy E110 (with 1 wt. % of Nb was used for making samples that were pre-exposed in UJP PRAHA a.s. and subsequently exposed to isotopically cleansed environment of H2 18O medium in an autoclave. The samples were analysed with gravimetric methods and IBA methods performed at the electrostatic particle accelerator Tandetron 4130 MC in the Nucler Physics Institute of the CAS, Řež. With IBA methods, the overall thicknesses of corrosion layers on the samples, element composition of the alloy and distribution of oxygen isotope 18O in the corrosion layer and its penetration in the alloy were identified. The retrieved data shows at the oxygen diffusion along ZrO2 grains because there are two peaks of 18O isotope concentrations in the corrosion layer. These peaks occur at the environment-oxide and oxide-metal interface. The element analysis identified the presence of undesirable hafnium.

Ultrathin SiO{sub 2} layer formed by the nitric acid oxidation of Si (NAOS) method to improve the thermal-SiO{sub 2}/Si interface for crystalline Si solar cells

Energy Technology Data Exchange (ETDEWEB)

Matsumoto, Taketoshi; Nakajima, Hiroki; Irishika, Daichi; Nonaka, Takaaki; Imamura, Kentaro; Kobayashi, Hikaru, E-mail: h.kobayashi@sanken.osaka-u.ac.jp

2017-02-15

Highlights: • The density of interface states at the SiO{sub 2}/Si interface is decreased by NAOS. • The minority carrier lifetime is increased by the NAOS treatment. • Great interfacial properties of the NAOS layer are kept after thermal oxidation. - Abstract: A combination of the nitric acid oxidation of Si (NAOS) method and post-thermal oxidation is found to efficiently passivate the SiO{sub 2}/n-Si(100) interface. Thermal oxidation at 925 °C and annealing at 450 °C in pure hydrogen atmosphere increases the minority carrier lifetime by three orders of magnitude, and it is attributed to elimination of Si dangling bond interface states. Fabrication of an ultrathin, i.e., 1.1 nm, NAOS SiO{sub 2} layer before thermal oxidation and H{sub 2} annealing further increases the minority carrier lifetime by 30% from 8.6 to 11.1 ms, and decreased the interface state density by 10% from 6.9 × 10{sup 9} to 6.3 × 10{sup 9}eV{sup −1} cm{sup −2}. After thermal oxidation at 800 °C, the SiO{sub 2} layer on the NAOS-SiO{sub 2}/Si(100) structure is 2.26 nm thick, i.e., 0.24 nm thicker than that on the Si(100) surface, while after thermal oxidation at 925 °C, it is 4.2 nm thick, i.e., 0.4 nm thinner than that on Si(100). The chemical stability results from the higher atomic density of a NAOS SiO{sub 2} layer than that of a thermal oxide layer as reported in Ref. [28] (Asuha et al., 2002). Higher minority carrier lifetime in the presence of the NAOS layer indicates that the NAOS-SiO{sub 2}/Si interface with a low interface state density is preserved after thermal oxidation, which supports out-diffusion oxidation mechanism, by which a thermal oxide layer is formed on the NAOS SiO{sub 2} layer.

Influence of the charge double layer on solid oxide fuel cell stack behavior

Science.gov (United States)

Whiston, Michael M.; Bilec, Melissa M.; Schaefer, Laura A.

2015-10-01

While the charge double layer effect has traditionally been characterized as a millisecond phenomenon, longer timescales may be possible under certain operating conditions. This study simulates the dynamic response of a previously developed solid oxide fuel cell (SOFC) stack model that incorporates the charge double layer via an equivalent circuit. The model is simulated under step load changes. Baseline conditions are first defined, followed by consideration of minor and major deviations from the baseline case. This study also investigates the behavior of the SOFC stack with a relatively large double layer capacitance value, as well as operation of the SOFC stack under proportional-integral (PI) control. Results indicate that the presence of the charge double layer influences the SOFC stack's settling time significantly under the following conditions: (i) activation and concentration polarizations are significantly increased, or (ii) a large value of the double layer capacitance is assumed. Under normal (baseline) operation, on the other hand, the charge double layer effect diminishes within milliseconds, as expected. It seems reasonable, then, to neglect the charge double layer under normal operation. However, careful consideration should be given to potential variations in operation or material properties that may give rise to longer electrochemical settling times.

Densification of ∼5 nm-thick SiO{sub 2} layers by nitric acid oxidation

Energy Technology Data Exchange (ETDEWEB)

Choi, Jaeyoung [Department of Energy Engineering, Dankook University, Cheonan 311-16 (Korea, Republic of); Joo, Soyeong [Institute for Advanced Engineering (IAE), Advanced Materials & Processing Center, Youngin 449-863 (Korea, Republic of); Park, Tae Joo [Department of Materials Science and Chemical Engineering, Hanyang University, Ansan 15588 (Korea, Republic of); Kim, Woo-Byoung, E-mail: woo7838@dankook.ac.kr [Department of Energy Engineering, Dankook University, Cheonan 311-16 (Korea, Republic of)

2017-08-15

Highlights: • Leakage current density of the commercial PECVD grown ∼5 nm SiO{sub 2} layer has been decreased about three orders of magnitude by densification. • The densification of SiO{sub 2} layer is achieved by high oxidation ability of O·. • Densities of suboxide, fixed charge (N{sub f}) and defect state (N{sub d}) in SiO{sub 2}/Si interface are decreased by NAOS and PMA. • Tunneling barrier height (Φ{sub t}) is increased because of the increase of atomic density in SiO{sub 2} layer. - Abstract: Low-temperature nitric acid (HNO{sub 3}) oxidation of Si (NAOS) has been used to improve the interface and electrical properties of ∼5 nm-thick SiO{sub 2}/Si layers produced by plasma-enhanced chemical vapor deposition (PECVD). Investigations of the physical properties and electrical characteristics of these thin films revealed that although their thickness is not changed by NAOS, the leakage current density at a gate bias voltage of −1 V decreases by about two orders of magnitude from 1.868 × 10{sup −5} A/cm{sup 2}. This leakage current density was further reduced by post-metallization annealing (PMA) at 250 °C for 10 min in a 5 vol.% hydrogen atmosphere, eventually reaching a level (5.2 × 10{sup −8} A/cm{sup 2}) approximately three orders of magnitude less than the as-grown SiO{sub 2} layer. This improvement is attributed to a decrease in the concentration of suboxide species (Si{sup 1+}, Si{sup 2+} and Si{sup 3+}) in the SiO{sub 2}/Si interface, as well as a decrease in the equilibrium density of defect sites (N{sub d}) and fixed charge density (N{sub f}). The barrier height (Φ{sub t}) generated by a Poole-Frenkel mechanism also increased from 0.205 to 0.371 eV after NAOS and PMA. The decrease in leakage current density is therefore attributed to a densification of the SiO{sub 2} layer in combination with the removal of OH species and increase in interfacial properties at the SiO{sub 2}/Si interface.

Lg = 100 nm In0.7Ga0.3As quantum well metal-oxide semiconductor field-effect transistors with atomic layer deposited beryllium oxide as interfacial layer

International Nuclear Information System (INIS)

Koh, D.; Kwon, H. M.; Kim, T.-W.; Veksler, D.; Gilmer, D.; Kirsch, P. D.; Kim, D.-H.; Hudnall, Todd W.; Bielawski, Christopher W.; Maszara, W.; Banerjee, S. K.

2014-01-01

In this study, we have fabricated nanometer-scale channel length quantum-well (QW) metal-oxide-semiconductor field effect transistors (MOSFETs) incorporating beryllium oxide (BeO) as an interfacial layer. BeO has high thermal stability, excellent electrical insulating characteristics, and a large band-gap, which make it an attractive candidate for use as a gate dielectric in making MOSFETs. BeO can also act as a good diffusion barrier to oxygen owing to its small atomic bonding length. In this work, we have fabricated In 0.53 Ga 0.47 As MOS capacitors with BeO and Al 2 O 3 and compared their electrical characteristics. As interface passivation layer, BeO/HfO 2 bilayer gate stack presented effective oxide thickness less 1 nm. Furthermore, we have demonstrated In 0.7 Ga 0.3 As QW MOSFETs with a BeO/HfO 2 dielectric, showing a sub-threshold slope of 100 mV/dec, and a transconductance (g m,max ) of 1.1 mS/μm, while displaying low values of gate leakage current. These results highlight the potential of atomic layer deposited BeO for use as a gate dielectric or interface passivation layer for III–V MOSFETs at the 7 nm technology node and/or beyond

Electrochemical synthesis of birnessite-type layered manganese oxides for rechargeable lithium batteries

Science.gov (United States)

Nakayama, Masaharu; Kanaya, Taku; Lee, Jong-Won; Popov, Branko N.

Layered manganese dioxide (MnO 2) films intercalated with Li +, Na + or Mg 2+ ions were synthesized by a one-step electrochemical method. The electrodeposition was potentiostatically performed by applying an anodic potential of 1.0 V vs. Ag/AgCl in an aqueous MnSO 4 solution containing a perchlorate salt of the cation. The electrodeposited oxide films have a birnessite-type layered structure with alkali cations and water molecules between manganese oxide layers. The galvanostatic charge-discharge experiments performed in 1 M LiPF 6-DME/PC solution indicated that the Mg 2+-intercalated MnO 2 electrode exhibits an initial discharge capacity as large as 140 mAh g -1 and it shows a better capacity retention during cycling as compared with the Li +- or Na +-intercalated MnO 2 electrode.

Increasing the stability of DNA nanostructure templates by atomic layer deposition of Al2O3 and its application in imprinting lithography

Directory of Open Access Journals (Sweden)

Hyojeong Kim

2017-11-01

Full Text Available We present a method to increase the stability of DNA nanostructure templates through conformal coating with a nanometer-thin protective inorganic oxide layer created using atomic layer deposition (ALD. DNA nanotubes and origami triangles were coated with ca. 2 nm to ca. 20 nm of Al2O3. Nanoscale features of the DNA nanostructures were preserved after the ALD coating and the patterns are resistive to UV/O3 oxidation. The ALD-coated DNA templates were used for a direct pattern transfer to poly(L-lactic acid films.

The effect of a zinc–tin-oxide layer used as an etch-stopper layer on the bias stress stability of solution-processed indium–gallium–zinc-oxide thin-film transistors

International Nuclear Information System (INIS)

Kim, Chul Ho; Rim, You Seung; Kim, Hyun Jae

2014-01-01

We investigated the bias stress stability of solution-processed indium–gallium–zinc-oxide thin-film transistors (IGZO TFTs) using zinc–tin-oxide (ZTO) as the etch-stopper layer, the so-called dual-active-layered ZTO/IGZO TFT (DALZI TFT). The DALZI TFT can use a low-cost back-channel-etch structure because of the high chemical stability of the upper ZTO layer. The DALZI TFT exhibited only a threshold voltage shift of −1.86 V under negative bias illumination stress (NBIS) conditions (stress time = 1000 s), while the unpassivated IGZO TFT suffered from a threshold voltage shift of −19.59 V under NBIS conditions (stress time = 1000 s). The superior bias stress stability of the DALZI TFT is attributed not only to the densification effect by the multi-stacking process but also to the lower sensitivity to ambient gases (e.g., oxygen and water vapour) due to the low oxygen vacancy in the upper ZTO layer. (paper)

Effect of calcination temperature on microstructure and electrochemical performance of lithium-rich layered oxide cathode materials

International Nuclear Information System (INIS)

Ma, Quanxin; Peng, Fangwei; Li, Ruhong; Yin, Shibo; Dai, Changsong

2016-01-01

Highlights: • A series of Li-rich layered oxide cathode materials (Li_1_._2Mn_0_._5_6Ni_0_._1_6Co_0_._0_8O_2) were successfully synthesized via a two-step synthesis method. • The effects of calcination temperature on the cathode materials were researched in detail. • A well-crystallized layered structure was obtained as the calcination temperature increased. • The samples calcined in a range of 850–900 °C exhibited excellent electrochemical performance. - Abstract: Lithium-rich layered oxide cathode materials (Li_1_._2Mn_0_._5_6Ni_0_._1_6Co_0_._0_8O_2 (LLMO)) were synthesized via a two-step synthesis method involving co-precipitation and high-temperature calcination. The effects of calcination temperature on the cathode materials were studied in detail. Structural and morphological characterizations revealed that a well-crystallized layered structure was obtained at a higher calcination temperature. Electrochemical performance evaluation revealed that a cathode material obtained at a calcination temperature of 850 °C delivered a high initial discharge capacity of 266.8 mAh g"−"1 at a 0.1 C rate and a capacity retention rate of 95.8% after 100 cycles as well as excellent rate capability. Another sample calcinated at 900 °C exhibited good cycling stability. It is concluded that the structural stability and electrochemical performance of Li-rich layered oxide cathode materials were strongly dependent on calcination temperatures. The results suggest that a calcination temperature in a range of 850–900 °C could promote electrochemical performance of this type of cathode materials.

Effect of calcination temperature on microstructure and electrochemical performance of lithium-rich layered oxide cathode materials

Energy Technology Data Exchange (ETDEWEB)

Ma, Quanxin; Peng, Fangwei; Li, Ruhong; Yin, Shibo; Dai, Changsong, E-mail: changsd@hit.edu.cn

2016-11-15

Highlights: • A series of Li-rich layered oxide cathode materials (Li{sub 1.2}Mn{sub 0.56}Ni{sub 0.16}Co{sub 0.08}O{sub 2}) were successfully synthesized via a two-step synthesis method. • The effects of calcination temperature on the cathode materials were researched in detail. • A well-crystallized layered structure was obtained as the calcination temperature increased. • The samples calcined in a range of 850–900 °C exhibited excellent electrochemical performance. - Abstract: Lithium-rich layered oxide cathode materials (Li{sub 1.2}Mn{sub 0.56}Ni{sub 0.16}Co{sub 0.08}O{sub 2} (LLMO)) were synthesized via a two-step synthesis method involving co-precipitation and high-temperature calcination. The effects of calcination temperature on the cathode materials were studied in detail. Structural and morphological characterizations revealed that a well-crystallized layered structure was obtained at a higher calcination temperature. Electrochemical performance evaluation revealed that a cathode material obtained at a calcination temperature of 850 °C delivered a high initial discharge capacity of 266.8 mAh g{sup −1} at a 0.1 C rate and a capacity retention rate of 95.8% after 100 cycles as well as excellent rate capability. Another sample calcinated at 900 °C exhibited good cycling stability. It is concluded that the structural stability and electrochemical performance of Li-rich layered oxide cathode materials were strongly dependent on calcination temperatures. The results suggest that a calcination temperature in a range of 850–900 °C could promote electrochemical performance of this type of cathode materials.

Mechanisms of damage to the oxide layer of cladding of fuel rods under accident conditions like RI

International Nuclear Information System (INIS)

Busser, Vincent

2009-01-01

During reactivity initiated accident, the importance of cladding tube oxidation on its thermomechanical behavior has been investigated. After RIA tests in experimental reactors oxide damage including radial cracking and spallation of the outer oxide layer has been evidenced. This work aims at better understanding the key mechanisms controlling these phenomena. Laboratory air-oxidation of Zircaloy-4 cladding tubes has been performed at 470 C. SEM micrographs show that radial cracks are initiated from the outer surface of the oxide layer and propagated radially towards the oxide-metal interface. A model predicting the stress evolution within the oxide and the depth of crack has been developed and validated on literature tests and tests of this study. Ring compression tests were used for the experimental study of the oxide degradation under mechanical loading. Experimental data revealed three mechanisms: densification of the radial crack network, propagation of these radial cracks, branching and spallation of oxide fragments. The influence of the circumferential cracks, periodically distributed in the oxide layer, on the stress distribution in oxide fragments has been analysed using finite element modelling. The determining influence of these cracks on the maximum stress oxide fragments has been demonstrated. (author)

Conduction and stability of holmium titanium oxide thin films grown by atomic layer deposition

Energy Technology Data Exchange (ETDEWEB)

Castán, H., E-mail: helena@ele.uva.es [Department of Electronic, University of Valladolid, 47011 Valladolid (Spain); García, H.; Dueñas, S.; Bailón, L. [Department of Electronic, University of Valladolid, 47011 Valladolid (Spain); Miranda, E. [Departament d' Enginyería Electrònica, Universitat Autónoma de Barcelona, 08193 Bellaterra (Spain); Kukli, K. [Department of Chemistry, University of Helsinki, FI-00014 Helsinki (Finland); Institute of Physics, University of Tartu, EE-50411,Tartu (Estonia); Kemell, M.; Ritala, M.; Leskelä, M. [Department of Chemistry, University of Helsinki, FI-00014 Helsinki (Finland)

2015-09-30

Holmium titanium oxide (HoTiO{sub x}) thin films of variable chemical composition grown by atomic layer deposition are studied in order to assess their suitability as dielectric materials in metal–insulator–metal electronic devices. The correlation between thermal and electrical stabilities as well as the potential usefulness of HoTiO{sub x} as a resistive switching oxide are also explored. It is shown that the layer thickness and the relative holmium content play important roles in the switching behavior of the devices. Cycled current–voltage measurements showed that the resistive switching is bipolar with a resistance window of up to five orders of magnitude. In addition, it is demonstrated that the post-breakdown current–voltage characteristics in HoTiO{sub x} are well described by a power-law model in a wide voltage and current range which extends from the soft to the hard breakdown regimes. - Highlights: • Gate and memory suitabilities of atomic layer deposited holmium titanium oxide. • Holmium titanium oxide exhibits resistive switching. • Layer thickness and holmium content influence the resistive switching. • Low and high resistance regimes follow a power-law model. • The power-law model can be extended to the hard breakdown regime.

Effect of nickel oxide seed layers on annealed-amorphous titanium oxide thin films prepared using plasma-enhanced chemical vapor deposition

International Nuclear Information System (INIS)

Wu, Cheng-Yang; Hong, Shao-Chyang; Hwang, Fu-Tsai; Lai, Li-Wen; Lin, Tan-Wei; Liu, Day-Shan

2011-01-01

The effect of a nickel oxide (NiO x ) seed layer on the crystallization and photocatalytic activity of the sequentially plasma-enhanced chemical vapor deposited amorphous titanium oxide (TiO x ) thin film processed by a post-annealing process was investigated. The evolution of the crystalline structures, chemical bond configurations, and surface/cross-sectional morphologies of the annealed TiO x films, with and without a NiO x seed layer, was examined using X-ray diffractometer, Fourier transform infrared spectrometry, X-ray photoelectron spectroscopy, atomic force microscopy, and field emission scanning electron microscope measurements. Thermo- and photo-induced hydrophilicity was determined by measuring the contact angle of water droplet. Photocatalytic activity after UV light irradiation was evaluated from the decolorization of a methylene blue solution. The crystallization temperature of the TiO x film, deposited on a NiO x seed layer, was found to be lower than that of a pure TiO x film, further improving the thermo- and photo-induced surface super-hydrophilicity. The TiO x film deposited onto the NiO x seed layer, resulting in significant cluster boundaries, showed a rough surface morphology and proved to alleviate the anatase crystal growth by increasing the post-annealing temperature, which yielded a more active surface area and prohibited the recombination of photogenerated electrons and holes. The photocatalytic activity of the NiO x /TiO x system with such a textured surface therefore was enhanced and optimized through an adequate post-annealing process.

Effect of nickel oxide seed layers on annealed-amorphous titanium oxide thin films prepared using plasma-enhanced chemical vapor deposition

Energy Technology Data Exchange (ETDEWEB)

Wu, Cheng-Yang; Hong, Shao-Chyang [Institute of Electro-Optical and Materials Science, National Formosa University, Huwei, Yunlin, 63201, Taiwan (China); Hwang, Fu-Tsai [Department of Electro-Optical Engineering, National United University, Miao-Li, 36003, Taiwan (China); Lai, Li-Wen [ITRI South, Industrial Technology Research Institute, Liujia, Tainan, 73445, Taiwan (China); Lin, Tan-Wei [Institute of Electro-Optical and Materials Science, National Formosa University, Huwei, Yunlin, 63201, Taiwan (China); Liu, Day-Shan, E-mail: dsliu@sunws.nfu.edu.tw [Institute of Electro-Optical and Materials Science, National Formosa University, Huwei, Yunlin, 63201, Taiwan (China)

2011-10-31

The effect of a nickel oxide (NiO{sub x}) seed layer on the crystallization and photocatalytic activity of the sequentially plasma-enhanced chemical vapor deposited amorphous titanium oxide (TiO{sub x}) thin film processed by a post-annealing process was investigated. The evolution of the crystalline structures, chemical bond configurations, and surface/cross-sectional morphologies of the annealed TiO{sub x} films, with and without a NiO{sub x} seed layer, was examined using X-ray diffractometer, Fourier transform infrared spectrometry, X-ray photoelectron spectroscopy, atomic force microscopy, and field emission scanning electron microscope measurements. Thermo- and photo-induced hydrophilicity was determined by measuring the contact angle of water droplet. Photocatalytic activity after UV light irradiation was evaluated from the decolorization of a methylene blue solution. The crystallization temperature of the TiO{sub x} film, deposited on a NiO{sub x} seed layer, was found to be lower than that of a pure TiO{sub x} film, further improving the thermo- and photo-induced surface super-hydrophilicity. The TiO{sub x} film deposited onto the NiO{sub x} seed layer, resulting in significant cluster boundaries, showed a rough surface morphology and proved to alleviate the anatase crystal growth by increasing the post-annealing temperature, which yielded a more active surface area and prohibited the recombination of photogenerated electrons and holes. The photocatalytic activity of the NiO{sub x}/TiO{sub x} system with such a textured surface therefore was enhanced and optimized through an adequate post-annealing process.

Growth behavior of surface oxide layer on SUS316L stainless steel at the early stage of exposure to 288degC water

International Nuclear Information System (INIS)

Soma, Yasutaka; Kato, Chiaki; Yamamoto, Masahiro

2012-01-01

Surface oxide layer on SUS316L stainless steels exposed to 288degC pure water with 2 ppm dissolved oxygen (DO) for 1-100 h were analyzed using Focused Ion Beam (FIB) and Scanning Transmission Electron Microscope (STEM) technique to understand the early stage of surface oxide layer formation. In order to analyze the multi layered surface oxide, the interfaces between the outer and the inner oxide layers and that between the inner oxide layer and SUS316L substrate were determined from Energy Dispersive X-ray Spectroscopy (EDX) line profiles. At 1 h exposure, double oxide layer which is composed of compact inner oxide layer and outer oxide layer with Fe-rich and Ni-rich oxide particles was formed. At the outermost region of the SUS316L substrate, Ni and Cr were enriched. At 100 h exposure, growth of the inner oxide layer was suppressed and the Ni and Cr enriched region at the alloy substrate was preserved underneath the Ni-rich outer oxide particles. At 1 h exposure, most of the outer oxide particles were composed of Fe-rich ones, at 10 h exposure, another Ni-rich outer oxide particles were nucleated and grew faster than Fe-rich ones. Consequently, a part of pre-formed Fe-rich outer oxide particles were covered with Ni-rich ones. (author)

Increased cathode performance using a thin film LSM layer on a structured 8YSZ electrolyte surface

Energy Technology Data Exchange (ETDEWEB)

Herbstritt, D.; Weber, A.; Ivers-Tiffee, E. [Karlsruhe Univ. (T.H.) (DE). Inst. fuer Werkstoffkunde der Elektrotechnik (IWE); Guntow, U.; Mueller, G. [Fraunhofer-Institut fuer Silicatforschung (ISC), Wuerzburg (Germany)

2000-07-01

A considerable part of the power losses in a SOFC single cell occurs due to the polarization resistance of the cathode/electrolyte interface. The resulting high cathodic overvoltage corresponds to an enhanced degradation of the cell. In case of a screen printed LSM cathode layer (LSM: La{sub 1-x}Sr{sub x}MnO{sub 3}) on a YSZ electrolyte substrate (YSZ: Y{sub 2}O{sub 3} stabilised ZrO{sub 2}) the cathodic reaction is generally assumed to be restricted to the three phase boundary (tpb) between cathode, oxidant and the electrolyte surface. The electrochemical active area was increased by a modification of the cathode/electrolyte interface. Single cells with a thin film LSM layer on a structured 8YSZ electrolyte showed a power output of about 0.95 W/cm{sup 2} at 0.7 V cell voltage (950 C; oxidant: air, 0.7 1/min; fuel: hydrogen, 0.5 1/min, 15% fuel utilization). (orig.)

Study on the CMP characteristics of a copper passivity layer formed by dipping in an oxidizer

International Nuclear Information System (INIS)

Choi, Youn-Ok; Lee, Woo-Sun; Choi, Gwon-Woo; Lee, Kang-Yeon; Kim, Nam-Oh

2011-01-01

Copper has been the material for ultra-large-scale integrated circuits owing to its excellent electromigration resistance and low electrical resistance. The polishing mechanism of metal chemical mechanical polishing (CMP) has been reported to be a repeated process of passive oxide layer formation through the use of on oxidizer and then the abrasion action of the slurry. However, because copper is softer and more sensitive to corrosion than tungsten, the slurry composition and the polishing mechanism during the copper CMP process may be more complicated. In a general Cu-CMP process, a mixture of an alumina-based slurry and an oxidizer in proper proportion is used in order to form a passive oxide layer such as CuO and CuO 2 . However, a conventional CMP process consumes an unnecessary amount of slurry to formed the passive layer. Therefore, in this paper, we propose a new method. The copper samples were oxidized by dipping in an oxidizer for an appropriate time to minimize the consumption of slurry before the CMP process. Then, we performed the CMP process. In order to compare the polishing characteristics of the copper thin film, we discuss the CMP removal rate and non-uniformity, as well as the microstructure of the surface and a layer cross-section based on a scanning.

Fabrication of hybrid graphene oxide/polyelectrolyte capsules by means of layer-by-layer assembly on erythrocyte cell templates

Directory of Open Access Journals (Sweden)

Joseba Irigoyen

2015-12-01

Full Text Available A novel and facile method was developed to produce hybrid graphene oxide (GO–polyelectrolyte (PE capsules using erythrocyte cells as templates. The capsules are easily produced through the layer-by-layer technique using alternating polyelectrolyte layers and GO sheets. The amount of GO and therefore its coverage in the resulting capsules can be tuned by adjusting the concentration of the GO dispersion during the assembly. The capsules retain the approximate shape and size of the erythrocyte template after the latter is totally removed by oxidation with NaOCl in water. The PE/GO capsules maintain their integrity and can be placed or located on other surfaces such as in a device. When the capsules are dried in air, they collapse to form a film that is approximately twice the thickness of the capsule membrane. AFM images in the present study suggest a film thickness of approx. 30 nm for the capsules in the collapsed state implying a thickness of approx. 15 nm for the layers in the collapsed capsule membrane. The polyelectrolytes used in the present study were polyallylamine hydrochloride (PAH and polystyrenesulfonate sodium salt (PSS. Capsules where characterized by transmission electron microscopy (TEM, atomic force microscopy (AFM, dynamic light scattering (DLS and Raman microscopy, the constituent layers by zeta potential and GO by TEM, XRD, and Raman and FTIR spectroscopies.

Structure and conductive properties of poly(ethylene oxide)/layered double hydroxide nanocomposite polymer electrolytes

International Nuclear Information System (INIS)

Liao, C.-S.; Ye, W.-B.

2004-01-01

The oligo(ethylene oxide) modified layered double hydroxide (LDH) prepared by template method was added as a nanoscale nucleating agent into poly(ethylene oxide) (PEO) to form PEO/OLDH nanocomposite electrolytes. The effects of OLDH addition on morphology and conductivities of nanocomposite electrolytes were studied using wide-angle X-ray diffractometer, polarized optical microscopy, differential scanning calorimetry and ionic conductivity measurement. The results show that the exfoliated morphology of nanocomposites is formed due to the surface modification of LDH layers with PEO matrix compatible oligo(ethylene oxide)s. The nanoscale dispersed OLDH layers inhibit the crystal growth of PEO crystallites and result in a plenty amount of intercrystalline grain boundary within PEO/OLDH nanocomposites. The ionic conductivities of nanocomposite electrolytes are enhanced by three orders of magnitude compared to the pure PEO polymer electrolytes at ambient temperature. It can be attributed to the ease transport of Li + along intercrystalline amorphous phase. This novel nanocomposite electrolytes system with high conductivities will be benefited to fabricate the thin-film type of Li-polymer secondary battery

Memory Effect of Metal-Oxide-Silicon Capacitors with Self-Assembly Double-Layer Au Nanocrystals Embedded in Atomic-Layer-Deposited HfO2 Dielectric

International Nuclear Information System (INIS)

Yue, Huang; Hong-Yan, Gou; Qing-Qing, Sun; Shi-Jin, Ding; Wei, Zhang; Shi-Li, Zhang

2009-01-01

We report the chemical self-assembly growth of Au nanocrystals on atomic-layer-deposited HfO 2 films aminosilanized by (3-Aminopropyl)-trimethoxysilane aforehand for memory applications. The resulting Au nanocrystals show a density of about 4 × 10 11 cm −2 and a diameter range of 5–8nm. The metal-oxide-silicon capacitor with double-layer Au nanocrystals embedded in HfO 2 dielectric exhibits a large C – V hysteresis window of 11.9V for ±11 V gate voltage sweeps at 1 MHz, a flat-band voltage shift of 1.5 V after the electrical stress under 7 V for 1 ms, a leakage current density of 2.9 × 10 −8 A/cm −2 at 9 V and room temperature. Compared to single-layer Au nanocrystals, the double-layer Au nanocrystals increase the hysteresis window significantly, and the underlying mechanism is thus discussed

Single-layered graphene oxide nanosheet/polyaniline hybrids fabricated through direct molecular exfoliation.

Science.gov (United States)

Chen, Guan-Liang; Shau, Shi-Min; Juang, Tzong-Yuan; Lee, Rong-Ho; Chen, Chih-Ping; Suen, Shing-Yi; Jeng, Ru-Jong

2011-12-06

In this study, we used direct molecular exfoliation for the rapid, facile, large-scale fabrication of single-layered graphene oxide nanosheets (GOSs). Using macromolecular polyaniline (PANI) as a layered space enlarger, we readily and rapidly synthesized individual GOSs at room temperature through the in situ polymerization of aniline on the 2D GOS platform. The chemically modified GOS platelets formed unique 2D-layered GOS/PANI hybrids, with the PANI nanorods embedded between the GO interlayers and extended over the GO surface. X-ray diffraction revealed that intergallery expansion occurred in the GO basal spacing after the PANI nanorods had anchored and grown onto the surface of the GO layer. Transparent folding GOSs were, therefore, observed in transmission electron microscopy images. GOS/PANI nanohybrids possessing high conductivities and large work functions have the potential for application as electrode materials in optoelectronic devices. Our dispersion/exfoliation methodology is a facile means of preparing individual GOS platelets with high throughput, potentially expanding the applicability of nanographene oxide materials. © 2011 American Chemical Society

Anti-fouling and high water permeable forward osmosis membrane fabricated via layer by layer assembly of chitosan/graphene oxide

Science.gov (United States)

Salehi, Hasan; Rastgar, Masoud; Shakeri, Alireza

2017-08-01

To date, forward osmosis (FO) has received considerable attention due to its potential application in seawater desalination. FO does not require external hydraulic pressure and consequently is believed to have a low fouling propensity. Despite the numerous privileges of FO process, a major challenge ahead for its development is the lack of high performance membranes. In this study, we fabricated a novel highly-efficient FO membrane using layer-by-layer (LbL) assembly of positive chitosan (CS) and negative graphene oxide (GO) nanosheets via electrostatic interaction on a porous support layer. The support layer was prepared by blending hydrophilic sulfonated polyethersulfone (SPES) into polyethersulfone (PES) matrix using wet phase inversion process. Various characterization techniques were used to confirm successful fabrication of LbL membrane. The number of layers formed on the SPES-PES support layer was easily adjusted by repeating the CS and GO deposition cycles. Thin film composite (TFC) membrane was also prepared by the same SPES-PES support layer and polyamide (PA) active layer to compare membranes performances. The water permeability and salt rejection of the fabricated membranes were obtained by two kinds of draw solutions (including Na2SO4 and sucrose) under two different membrane orientations. The results showed that membrane coated by a CS/GO bilayers had water flux of 2-4 orders of magnitude higher than the TFC one. By increasing the number of CS/GO bilayers, the selectivity of the LbL membrane was improved. The novel fabricated LbL membrane showed better fouling resistance than the TFC one in the feed solution containing 200 ppm of sodium alginate as a foulant model.

The effect of substrate temperature on atomic layer deposited zinc tin oxide

Energy Technology Data Exchange (ETDEWEB)

Lindahl, Johan, E-mail: johan.lindahl@angstrom.uu.se; Hägglund, Carl, E-mail: carl.hagglund@angstrom.uu.se; Wätjen, J. Timo, E-mail: timo.watjen@angstrom.uu.se; Edoff, Marika, E-mail: marika.edoff@angstrom.uu.se; Törndahl, Tobias, E-mail: tobias.torndahl@angstrom.uu.se

2015-07-01

Zinc tin oxide (ZTO) thin films were deposited on glass substrates by atomic layer deposition (ALD), and the film properties were investigated for varying deposition temperatures in the range of 90 to 180 °C. It was found that the [Sn]/([Sn] + [Zn]) composition is only slightly temperature dependent, while properties such as growth rate, film density, material structure and band gap are more strongly affected. The growth rate dependence on deposition temperature varies with the relative number of zinc or tin containing precursor pulses and it correlates with the growth rate behavior of pure ZnO and SnO{sub x} ALD. In contrast to the pure ZnO phase, the density of the mixed ZTO films is found to depend on the deposition temperature and it increases linearly with about 1 g/cm{sup 3} in total over the investigated range. Characterization by transmission electron microscopy suggests that zinc rich ZTO films contain small (~ 10 nm) ZnO or ZnO(Sn) crystallites embedded in an amorphous matrix, and that these crystallites increase in size with increasing zinc content and deposition temperature. These crystallites are small enough for quantum confinement effects to reduce the optical band gap of the ZTO films as they grow in size with increasing deposition temperature. - Highlights: • Zinc tin oxide thin films were deposited by atomic layer deposition. • The structure and optical properties were studied at different growth temperatures. • The growth temperature had only a small effect on the composition of the films. • Small ZnO or ZnO(Sn) crystallites were observed by TEM in zinc rich ZTO films. • The growth temperature affects the crystallite size, which influences the band gap.

The effect of substrate temperature on atomic layer deposited zinc tin oxide

International Nuclear Information System (INIS)

Lindahl, Johan; Hägglund, Carl; Wätjen, J. Timo; Edoff, Marika; Törndahl, Tobias

2015-01-01

Zinc tin oxide (ZTO) thin films were deposited on glass substrates by atomic layer deposition (ALD), and the film properties were investigated for varying deposition temperatures in the range of 90 to 180 °C. It was found that the [Sn]/([Sn] + [Zn]) composition is only slightly temperature dependent, while properties such as growth rate, film density, material structure and band gap are more strongly affected. The growth rate dependence on deposition temperature varies with the relative number of zinc or tin containing precursor pulses and it correlates with the growth rate behavior of pure ZnO and SnO x ALD. In contrast to the pure ZnO phase, the density of the mixed ZTO films is found to depend on the deposition temperature and it increases linearly with about 1 g/cm 3 in total over the investigated range. Characterization by transmission electron microscopy suggests that zinc rich ZTO films contain small (~ 10 nm) ZnO or ZnO(Sn) crystallites embedded in an amorphous matrix, and that these crystallites increase in size with increasing zinc content and deposition temperature. These crystallites are small enough for quantum confinement effects to reduce the optical band gap of the ZTO films as they grow in size with increasing deposition temperature. - Highlights: • Zinc tin oxide thin films were deposited by atomic layer deposition. • The structure and optical properties were studied at different growth temperatures. • The growth temperature had only a small effect on the composition of the films. • Small ZnO or ZnO(Sn) crystallites were observed by TEM in zinc rich ZTO films. • The growth temperature affects the crystallite size, which influences the band gap

Defects and defect generation in oxide layer of ion implanted silicon-silicon dioxide structures

CERN Document Server

Baraban, A P

2002-01-01

One studies mechanism of generation of defects in Si-SiO sub 2 structure oxide layer as a result of implantation of argon ions with 130 keV energy and 10 sup 1 sup 3 - 3.2 x 10 sup 1 sup 7 cm sup - sup 2 doses. Si-SiO sub 2 structures are produced by thermal oxidation of silicon under 950 deg C temperature. Investigations were based on electroluminescence technique and on measuring of high-frequency volt-farad characteristics. Increase of implantation dose was determined to result in spreading of luminosity centres and in its maximum shifting closer to boundary with silicon. Ion implantation was shown, as well, to result in increase of density of surface states at Si-SiO sub 2 interface. One proposed model of defect generation resulting from Ar ion implantation into Si-SiO sub 2

Atomic layer deposition of Al{sub 2}O{sub 3} for single electron transistors utilizing Pt oxidation and reduction

Energy Technology Data Exchange (ETDEWEB)

McConnell, Michael S., E-mail: mmcconn5@nd.edu; Schneider, Louisa C.; Karbasian, Golnaz; Rouvimov, Sergei; Orlov, Alexei O.; Snider, Gregory L. [Department of Electrical Engineering, University of Notre Dame, 275 Fitzpatrick Hall, Notre Dame, Indiana 46556 (United States)

2016-01-15

This work describes the fabrication of single electron transistors using electron beam lithography and atomic layer deposition to form nanoscale tunnel transparent junctions of alumina (Al{sub 2}O{sub 3}) on platinum nanowires using either water or ozone as the oxygen precursor and trimethylaluminum as the aluminum precursor. Using room temperature, low frequency conductance measurements between the source and drain, it was found that devices fabricated using water had higher conductance than devices fabricated with ozone. Subsequent annealing caused both water- and ozone-based devices to increase in conductance by more than 2 orders of magnitude. Furthermore, comparison of devices at low temperatures (∼4 K) showed that annealed devices displayed much closer to the ideal behavior (i.e., constant differential conductance) outside of the Coulomb blockade region and that untreated devices showed nonlinear behavior outside of the Coulomb blockade region (i.e., an increase in differential conductance with source-drain voltage bias). Transmission electron microscopy cross-sectional images showed that annealing did not significantly change device geometry, but energy dispersive x-ray spectroscopy showed an unusually large amount of oxygen in the bottom platinum layer. This suggests that the atomic layer deposition process results in the formation of a thin platinum surface oxide, which either decomposes or is reduced during the anneal step, resulting in a tunnel barrier without the in-series native oxide contribution. Furthermore, the difference between ozone- and water-based devices suggests that ozone promotes atomic layer deposition nucleation by oxidizing the surface but that water relies on physisorption of the precursors. To test this theory, devices were exposed to forming gas at room temperature, which also reduces platinum oxide, and a decrease in resistance was observed, as expected.

Signatures of Quantized Energy States in Solution-Processed Ultrathin Layers of Metal-Oxide Semiconductors and Their Devices

KAUST Repository

Labram, John G.

2015-02-13

Physical phenomena such as energy quantization have to-date been overlooked in solution-processed inorganic semiconducting layers, owing to heterogeneity in layer thickness uniformity unlike some of their vacuum-deposited counterparts. Recent reports of the growth of uniform, ultrathin (<5 nm) metal-oxide semiconductors from solution, however, have potentially opened the door to such phenomena manifesting themselves. Here, a theoretical framework is developed for energy quantization in inorganic semiconductor layers with appreciable surface roughness, as compared to the mean layer thickness, and present experimental evidence of the existence of quantized energy states in spin-cast layers of zinc oxide (ZnO). As-grown ZnO layers are found to be remarkably continuous and uniform with controllable thicknesses in the range 2-24 nm and exhibit a characteristic widening of the energy bandgap with reducing thickness in agreement with theoretical predictions. Using sequentially spin-cast layers of ZnO as the bulk semiconductor and quantum well materials, and gallium oxide or organic self-assembled monolayers as the barrier materials, two terminal electronic devices are demonstrated, the current-voltage characteristics of which resemble closely those of double-barrier resonant-tunneling diodes. As-fabricated all-oxide/hybrid devices exhibit a characteristic negative-differential conductance region with peak-to-valley ratios in the range 2-7.

Effect of layer-by-layer coatings and localization of antioxidant on oxidative stability of a model encapsulated bioactive compound in oil-in-water emulsions.

Science.gov (United States)

Pan, Yuanjie; Nitin, N

2015-11-01

Oxidation of encapsulated bioactives in emulsions is one of the key challenges that limit shelf-life of many emulsion containing products. This study seeks to quantify the role of layer-by-layer coatings and localization of antioxidant molecules at the emulsion interface in influencing oxidation of the encapsulated bioactives. Oxidative barrier properties of the emulsions were simulated by measuring the rate of reaction of peroxyl radicals generated in the aqueous phase with the encapsulated radical sensitive dye in the lipid core of the emulsions. The results of peroxyl radical permeation were compared to the stability of encapsulated retinol (model bioactive) in emulsions. To evaluate the role of layer-by-layer coatings in influencing oxidative barrier properties, radical permeation rates and retinol stability were evaluated in emulsion formulations of SDS emulsion and SDS emulsion with one or two layers of polymers (ϵ-polylysine and dextran sulfate) coated at the interface. To localize antioxidant molecules to the interface, gallic acid (GA) was chemically conjugated with ϵ-polylysine and subsequently deposited on SDS emulsion based on electrostatic interactions. Emulsion formulations with localized GA molecules at the interface were compared with SDS emulsion with GA molecules in the bulk aqueous phase. The results of this study demonstrate the advantage of localization of antioxidant at the interface and the limited impact of short chain polymer coatings at the interface of emulsions in reducing permeation of radicals and oxidation of a model encapsulated bioactive in oil-in-water emulsions. Copyright © 2015 Elsevier B.V. All rights reserved.

Layer-by-layer assembly of functionalized reduced graphene oxide for direct electrochemistry and glucose detection

Energy Technology Data Exchange (ETDEWEB)

Mascagni, Daniela Branco Tavares [São Paulo State University - UNESP, Sorocaba, São Paulo (Brazil); Miyazaki, Celina Massumi [Federal University of São Carlos, UFSCar, Campus Sorocaba, SP (Brazil); Cruz, Nilson Cristino da [São Paulo State University - UNESP, Sorocaba, São Paulo (Brazil); Leite de Moraes, Marli [Federal University of São Paulo, Unifesp, Campus São José dos Campos, SP (Brazil); Riul, Antonio [University of Campinas - Unicamp, Campinas, São Paulo (Brazil); Ferreira, Marystela, E-mail: marystela@ufscar.br [Federal University of São Carlos, UFSCar, Campus Sorocaba, SP (Brazil)

2016-11-01

We report an electrochemical glucose biosensor made with layer-by-layer (LbL) films of functionalized reduced graphene oxide (rGO) and glucose oxidase (GOx). The LbL assembly using positively and negatively charged rGO multilayers represents a simple approach to develop enzymatic biosensors. The electron transport properties of graphene were combined with the specificity provided by the enzyme. rGO was obtained and functionalized using chemical methods, being positively charged with poly(diallyldimethylammonium chloride) to form GPDDA, and negatively charged with poly(styrene sulfonate) to form GPSS. Stable aqueous dispersions of GPDDA and GPSS are easily obtained, enabling the growth of LbL films on various solid supports. The use of graphene in the immobilization of GOx promoted Direct Electron Transfer, which was evaluated by Cyclic Voltammetry. Amperometric measurements indicated a detection limit of 13.4 μmol·L{sup ‐1} and sensitivity of 2.47 μA·cm{sup −2}·mmol{sup −1}·L for glucose with the (GPDDA/GPSS){sub 1}/(GPDDA/GOx){sub 2} architecture, whose thickness was 19.80 ± 0.28 nm, as determined by Surface Plasmon Resonance (SPR). The sensor may be useful for clinical analysis since glucose could be detected even in the presence of typical interfering agents and in real samples of a lactose-free milk and an electrolyte solution to prevent dehydration. - Highlights: • Direct electrochemistry of glucose oxidase at functionalized reduced graphene oxide. • Thickness (layer-by-layer) LbL film determined by Surface Plasmon Resonance (SPR). • Selective determination of glucose in the presence of several interferents. • Real sample test: commercial oral electrolyte solution and lactose-free milk.

Layer-by-layer assembly of functionalized reduced graphene oxide for direct electrochemistry and glucose detection

International Nuclear Information System (INIS)

Mascagni, Daniela Branco Tavares; Miyazaki, Celina Massumi; Cruz, Nilson Cristino da; Leite de Moraes, Marli; Riul, Antonio; Ferreira, Marystela

2016-01-01

We report an electrochemical glucose biosensor made with layer-by-layer (LbL) films of functionalized reduced graphene oxide (rGO) and glucose oxidase (GOx). The LbL assembly using positively and negatively charged rGO multilayers represents a simple approach to develop enzymatic biosensors. The electron transport properties of graphene were combined with the specificity provided by the enzyme. rGO was obtained and functionalized using chemical methods, being positively charged with poly(diallyldimethylammonium chloride) to form GPDDA, and negatively charged with poly(styrene sulfonate) to form GPSS. Stable aqueous dispersions of GPDDA and GPSS are easily obtained, enabling the growth of LbL films on various solid supports. The use of graphene in the immobilization of GOx promoted Direct Electron Transfer, which was evaluated by Cyclic Voltammetry. Amperometric measurements indicated a detection limit of 13.4 μmol·L ‐1 and sensitivity of 2.47 μA·cm −2 ·mmol −1 ·L for glucose with the (GPDDA/GPSS) 1 /(GPDDA/GOx) 2 architecture, whose thickness was 19.80 ± 0.28 nm, as determined by Surface Plasmon Resonance (SPR). The sensor may be useful for clinical analysis since glucose could be detected even in the presence of typical interfering agents and in real samples of a lactose-free milk and an electrolyte solution to prevent dehydration. - Highlights: • Direct electrochemistry of glucose oxidase at functionalized reduced graphene oxide. • Thickness (layer-by-layer) LbL film determined by Surface Plasmon Resonance (SPR). • Selective determination of glucose in the presence of several interferents. • Real sample test: commercial oral electrolyte solution and lactose-free milk.

Layer-by-Layer Hybrids of MoS2 and Reduced Graphene Oxide for Lithium Ion Batteries

International Nuclear Information System (INIS)

Jing, Yu; Ortiz-Quiles, Edwin O.; Cabrera, Carlos R.; Chen, Zhongfang; Zhou, Zhen

2014-01-01

Highlights: • Layer-by-layer MoS 2 /rGO hybrids were prepared by rGO involved lithiation-exfoliation method. • This hybrid exhibited enhanced electrochemical performances due to the existence of rGO. • The roles of rGO in different charging/discharging processes were interpreted by computations. - Abstract: Two-dimensional MoS 2 shows great potential for effective Li storage due to its good thermal and chemical stability, high theoretical capacity, and experimental accessibility. However, the poor electrical conductivity and the restacking tendency significantly restrict its applications to lithium ion batteries (LIBs). To overcome these problems, we introduced reduced graphene oxides (rGO) to the intercalation-exfoliation preparation process of few-layered MoS 2 and obtained layer-by-layer MoS 2 /rGO hybrids. With the addition of rGO, the restacking of MoS 2 layers was apparently inhibited, and MoS 2 with 1 ∼ 3 layers was obtained in the composite. Due to the positive role of rGO, MoS 2 /rGO hybrids exhibited highly enhanced cyclic stability and high-rate performances as LIB anodes in comparison with bare MoS 2 layers or bulk MoS 2 . Moreover, the experimental results were well interpreted through density functional theory computations

High-temperature oxidation of tungsten covered by layer of glass-enamel melt

International Nuclear Information System (INIS)

Vasnetsova, V.B.; Shardakov, N.T.; Kudyakov, V.Ya.; Deryabin, V.A.

1997-01-01

Corrosion losses of tungsten covered by the layer of glass-enamel melt were determined at 800, 850, 900, 950 deg C. It is shown that the rate of high-temperature oxidation of tungsten decreases after application of glass-enamel melt on its surface. This is probably conditioned by reduction of area of metal interaction with oxidizing atmosphere

Monitoring the layer-by-layer self-assembly of graphene and graphene oxide by spectroscopic ellipsometry.

Science.gov (United States)

Zhou, Kai-Ge; Chang, Meng-Jie; Wang, Hang-Xing; Xie, Yu-Long; Zhang, Hao-Li

2012-01-01

Thin films of graphene oxide, graphene and copper (II) phthalocyanine dye have been successfully fabricated by electrostatic layer-by-layer (LbL) assembly approach. We present the first variable angle spectroscopic ellipsometry (VASE) investigation on these graphene-dye hybrid thin films. The thickness evaluation suggested that our LbL assembly process produces highly uniform and reproducible thin films. We demonstrate that the refractive indices of the graphene-dye thin films undergo dramatic variation in the range close to the absorption of the dyes. This investigation provides new insight to the optical properties of graphene containing thin films and shall help to establish an appropriate optical model for graphene-based hybrid materials.

Zinc oxide nanowire-poly(methyl methacrylate) dielectric layers for polymer capacitive pressure sensors.

Science.gov (United States)

Chen, Yan-Sheng; Hsieh, Gen-Wen; Chen, Shih-Ping; Tseng, Pin-Yen; Wang, Cheng-Wei

2015-01-14

Polymer capacitive pressure sensors based on a dielectric composite layer of zinc oxide nanowire and poly(methyl methacrylate) show pressure sensitivity in the range of 2.63 × 10(-3) to 9.95 × 10(-3) cm(2) gf(-1). This represents an increase of capacitance change by as much as a factor of 23 over pristine polymer devices. An ultralight load of only 10 mg (corresponding to an applied pressure of ∼0.01 gf cm(-2)) can be clearly recognized, demonstrating remarkable characteristics of these nanowire-polymer capacitive pressure sensors. In addition, optical transmittance of the dielectric composite layer is approximately 90% in the visible wavelength region. Their low processing temperature, transparency, and flexible dielectric film makes them a highly promising means for flexible touching and pressure-sensing applications.

Sol-gel processed thin-layer ruthenium oxide/carbon black supercapacitors: A revelation of the energy storage issues

Energy Technology Data Exchange (ETDEWEB)

Panic, V.V.; Dekanski, A.B.; Stevanovic, R.M. [Institute of Chemistry, Technology and Metallurgy, Department of Electrochemistry, University of Belgrade, Njegoseva 12, Belgrade 125213 (RS)

2010-07-01

Hydrous ruthenium oxide/carbon black nanocomposites were prepared by impregnation of the carbon blacks by differently aged inorganic RuO{sub 2} sols, i.e. of different particle size. Commercial Black Pearls 2000 {sup registered} (BP) and Vulcan {sup registered} XC-72 R (XC) carbon blacks were used. Capacitive properties of BP/RuO{sub 2} and XC/RuO{sub 2} composites were investigated by cyclic voltammetry (CV) and electrochemical impedance spectroscopy (EIS) in H{sub 2}SO{sub 4} solution. Capacitance values and capacitance distribution through the composite porous layer were found different if high- (BP) and low- (XC) surface-area carbons are used as supports. The aging time (particle size) of Ru oxide sol as well as the concentration of the oxide solid phase in the impregnating medium influenced the capacitive performance of prepared composites. While the capacitance of BP-supported oxide decreases with the aging time, the capacitive ability of XC-supported oxide is promoted with increasing oxide particle size. The increase in concentration of the oxide solid phase in the impregnating medium caused an improvement of charging/discharging characteristics due to pronounced pseudocapacitance contribution of the increasing amount of inserted oxide. The effects of these variables in the impregnation process on the energy storage capabilities of prepared nanocomposites are envisaged as a result of intrinsic way of population of the pores of carbon material by hydrous Ru oxide particle. (author)

Selective UV–O3 treatment for indium zinc oxide thin film transistors with solution-based multiple active layer

Science.gov (United States)

Kim, Yu-Jung; Jeong, Jun-Kyo; Park, Jung-Hyun; Jeong, Byung-Jun; Lee, Hi-Deok; Lee, Ga-Won

2018-06-01

In this study, a method to control the electrical performance of solution-based indium zinc oxide (IZO) thin film transistors (TFTs) is proposed by ultraviolet–ozone (UV–O3) treatment on the selective layer during multiple IZO active layer depositions. The IZO film is composed of triple layers formed by spin coating and UV–O3 treatment only on the first layer or last layer. The IZO films are compared by X-ray photoelectron spectroscopy, and the results show that the atomic ratio of oxygen vacancy (VO) increases in the UV–O3 treatment on the first layer, while it decreases on last layer. The device characteristics of the bottom gated structure are also improved in the UV–O3 treatment on the first layer. This indicates that the selective UV–O3 treatment in a multi-stacking active layer is an effective method to optimize TFT properties by controlling the amount of VO in the IZO interface and surface independently.

Layer-by-layer self-assembling copper tetrasulfonated phthalocyanine on carbon nanotube modified glassy carbon electrode for electro-oxidation of 2-mercaptoethanol

International Nuclear Information System (INIS)

Shaik, Mahabul; Rao, V.K.; Gupta, Manish; Pandey, P.

2012-01-01

This paper describes the electrocatalytic activity of layer-by-layer self-assembled copper tetrasulfonated phthalocyanine (CuPcTS) on carbon nanotube (CNT)-modified glassy carbon (GC) electrode. CuPcTS is immobilized on the negatively charged CNT surface by alternatively assembling a cationic poly(diallyldimethylammonium chloride) (PDDA) layer and a CuPcTS layer. UV–vis absorption spectra and electrochemical measurements suggested the successive linear depositions of the bilayers of CuPcTs and PDDA on CNT. The surface morphology was observed using scanning electron microscopy. The viability of this CuPcTS/PDDA/CNT modified GC electrode as a redox mediator for the anodic oxidation and sensitive amperometric determination of 2-mercaptoethanol (2-ME) in alkaline conditions is described. The effect of number of bilayers of CuPcTS/PDDA and pH on electrochemical oxidation of 2-ME was studied. The proposed electrochemical sensor displayed excellent characteristics towards the determination of 2-ME in 0.1 M NaOH; such as low overpotentials (− 0.15 V vs Ag/AgCl), linear concentration range of 3 × 10 −5 M to 6 × 10 −3 M, and with a detection limit of 2.5 × 10 −5 M using simple amperometry. - Highlights: ► Carbon nanotubes (CNT) were drop-dried on glassy carbon electrode (GCE). ► Copper tetrasulfonated phthalocyanine (CuPcTS) was deposited on CNT/GCE. ► Layer-by-layer self-assembling method is used for depositing CuPcTS. ► Electrocatalytic oxidation of 2-mercaptoethanol (ME) was studied at this electrode ► The detection limit of ME at modified electrode was 25 μM by amperometry.

Microstructure and microtexture evolutions of deformed oxide layers on a hot-rolled microalloyed steel

International Nuclear Information System (INIS)

Yu, Xianglong; Jiang, Zhengyi; Zhao, Jingwei; Wei, Dongbin; Zhou, Cunlong; Huang, Qingxue

2015-01-01

Highlights: • Microtexture development of deformed oxide layers is investigated. • Magnetite shares the {0 0 1} fibre texture with wustite. • Hematite develops the {0 0 0 1} basal fibre parallel to the oxide growth. • Stress relief and ion vacancy diffusion mechanism for magnetite seam. - Abstract: Electron backscatter diffraction (EBSD) analysis has been presented to investigate the microstructure and microtexture evolutions of deformed oxide scale formed on a microalloyed steel during hot rolling and accelerated cooling. Magnetite and wustite in oxide layers share a strong {0 0 1} and a weak {1 1 0} fibres texture parallel to the oxide growth. Trigonal hematite develops the {0 0 0 1} basal fibre parallel to the crystallographic plane {1 1 1} in magnetite. Taylor factor estimates have been conducted to elucidate the microtexture evolution. The fine-grained magnetite seam adjacent to the substrate is governed by stress relief and ions vacancy diffusion mechanism

Quantification of Discrete Oxide and Sulfur Layers on Sulfur-Passivated InAs by XPS

National Research Council Canada - National Science Library

Petrovykh, D. Y; Sullivan, J. M; Whitman, L. J

2005-01-01

.... The S-passivated InAs(001) surface can be modeled as a sulfur-indium-arsenic layer-cake structure, such that characterization requires quantification of both arsenic oxide and sulfur layers that are at most a few monolayers thick...

Interfacial bonding stabilizes rhodium and rhodium oxide nanoparticles on layered Nb oxide and Ta oxide supports.

Science.gov (United States)

Strayer, Megan E; Binz, Jason M; Tanase, Mihaela; Shahri, Seyed Mehdi Kamali; Sharma, Renu; Rioux, Robert M; Mallouk, Thomas E

2014-04-16

Metal nanoparticles are commonly supported on metal oxides, but their utility as catalysts is limited by coarsening at high temperatures. Rhodium oxide and rhodium metal nanoparticles on niobate and tantalate supports are anomalously stable. To understand this, the nanoparticle-support interaction was studied by isothermal titration calorimetry (ITC), environmental transmission electron microscopy (ETEM), and synchrotron X-ray absorption and scattering techniques. Nanosheets derived from the layered oxides KCa2Nb3O10, K4Nb6O17, and RbTaO3 were compared as supports to nanosheets of Na-TSM, a synthetic fluoromica (Na0.66Mg2.68(Si3.98Al0.02)O10.02F1.96), and α-Zr(HPO4)2·H2O. High surface area SiO2 and γ-Al2O3 supports were also used for comparison in the ITC experiments. A Born-Haber cycle analysis of ITC data revealed an exothermic interaction between Rh(OH)3 nanoparticles and the layered niobate and tantalate supports, with ΔH values in the range -32 kJ·mol(-1) Rh to -37 kJ·mol(-1) Rh. In contrast, the interaction enthalpy was positive with SiO2 and γ-Al2O3 supports. The strong interfacial bonding in the former case led to "reverse" ripening of micrometer-size Rh(OH)3, which dispersed as 0.5 to 2 nm particles on the niobate and tantalate supports. In contrast, particles grown on Na-TSM and α-Zr(HPO4)2·H2O nanosheets were larger and had a broad size distribution. ETEM, X-ray absorption spectroscopy, and pair distribution function analyses were used to study the growth of supported nanoparticles under oxidizing and reducing conditions, as well as the transformation from Rh(OH)3 to Rh nanoparticles. Interfacial covalent bonding, possibly strengthened by d-electron acid/base interactions, appear to stabilize Rh(OH)3, Rh2O3, and Rh nanoparticles on niobate and tantalate supports.

The electrochemical transfer reactions and the structure of the iron|oxide layer|electrolyte interface

International Nuclear Information System (INIS)

Petrović, Željka; Metikoš-Huković, Mirjana; Babić, Ranko

2012-01-01

The thickness, barrier (protecting) and semiconducting properties of the potentiostatically formed oxide films on the pure iron electrode in an aqueous borate buffer solution were investigated by electrochemical quartz crystal nanobalance (EQCN), electrochemical impedance spectroscopy (EIS), and Mott–Schottky (MS) analysis. The thicknesses of the prepassive Fe(II)hydroxide layer (up to monolayer) nucleated on the bare iron surface and the passive Fe(II)/Fe(III) layer (up to 2 nm), deposited on the top of the first one, were determined using in situ gravimetry. Electronic properties of iron prepassive and passive films as well as ionic and electronic transfer reactions at the film|solution interface were discussed on the basis of a band structure model of the surface oxide film and the potential distribution at the interface. The anodic oxide film formation and cathodic decomposition are coupled processes and their reversible inter-conversion is mediated by the availability of free charge carriers on the electrode|solution interface. The structure of the reversible double layer at the iron oxide|solution interface was discussed based on the concept of the specific adsorption of the imidazolium cation on the negatively charged electrode surface at pH > pH pzc .

Fabrication of SGOI material by oxidation of an epitaxial SiGe layer on an SOI wafer with H ions implantation

International Nuclear Information System (INIS)

Cheng Xinli; Chen Zhijun; Wang Yongjin; Jin Bo; Zhang Feng; Zou Shichang

2005-01-01

SGOI materials were fabricated by thermal dry oxidation of epitaxial H-ion implanted SiGe layers on SOI wafers. The hydrogen implantation was found to delay the oxidation rate of SiGe layer and to decrease the loss of Ge atoms during oxidation. Further, the H implantation did not degrade the crystallinity of SiGe layer during fabrication of the SGOI

Heterojunction PbS Nanocrystal Solar Cells with Oxide Charge-Transport Layers

KAUST Repository

Hyun, Byung-Ryool; Choi, Joshua J.; Seyler, Kyle L.; Hanrath, Tobias; Wise, Frank W.

2013-01-01

and characterized. Solution-processed devices were used to systematically study the dependence on nanocrystal size and achieve conversion efficiency as high as 2.5%. Optical modeling indicates that optimum performance should be obtained with thinner oxide layers

Electrical instability of InGaZnO thin-film transistors with and without titanium sub-oxide layer under light illumination

Science.gov (United States)

Chiu, Y. C.; Zheng, Z. W.; Cheng, C. H.; Chen, P. C.; Yen, S. S.; Fan, C. C.; Hsu, H. H.; Kao, H. L.; Chang, C. Y.

2017-03-01

The electrical instability behaviors of amorphous indium-gallium-zinc oxide thin-film transistors with and without titanium sub-oxide passivation layer were investigated under light illumination in this study. For the unpassivated IGZO TFT device, in contrast with the dark case, a noticeable increase of the sub-threshold swing was observed when under the illumination environment, which can be attributed to the generation of ionized oxygen vacancies within the α-IGZO active layer by high energy photons. For the passivated TFT device, the much smaller SS of 70 mV/dec and high device mobility of >100 cm2/Vs at a drive voltage of 3 V with negligible degradation under light illumination are achieved due to the passivation effect of n-type titanium sub-oxide semiconductor, which may create potential application for high-performance display.

Inverted bulk-heterojunction organic solar cell using chemical bath deposited titanium oxide as electron collection layer

OpenAIRE

Kuwabara, Takayuki; Sugiyama, Hirokazu; Kuzuba, Mitsuhiro　　; Yamaguchi, Takahiro; Takahashi, Kohshin

2010-01-01

Chemical bath deposited titanium oxide (TiOx ) as an electron collection layer is introduced between the organic layer and the indium tin oxide (ITO) electrode for improving the performance of inverted bulk-heterojunction organic thin film solar cells with 1 cm2 active area, where regioregular poly(3-hexylthiophene) (P3HT) and [6,6]-phenyl C61 butyric acid methyl ester (PCBM) were mainly used as the photo-active layer. The uniform and thin TiOx film was easily prepared onto the ITO electrode ...

Preliminary results on the chemical characterisation of the cathode nickel--emissive layer interface in oxide cathodes

International Nuclear Information System (INIS)

Jenkins, S.N.; Barber, D.K.; Whiting, M.J.; Baker, M.A.

2003-01-01

In cathode ray tube (CRT) thermionic oxide cathodes, the nickel-oxide interface properties are key to understanding the mechanisms of operation. At the elevated operational temperatures, free barium is formed at the interface by the reaction of reducing activators, from the nickel alloy, with barium oxide. The free barium diffuses to the outer surface of the oxide providing a low work function electron-emitting surface. However, during cathode life an interface layer grows between the nickel alloy and oxide, comprised of reaction products. The interfacial layer sets limits on the cathode performance and useful operational lifetime by inhibiting the barium reducing reaction. This paper discusses sample preparation procedures for exposure of the interface and the use of several surface and bulk analytical techniques to study interface layer formation. SEM, AES and SIMS data are presented, which provide preliminary insight into the mechanisms operating during the cathode's lifetime. There is evidence that the activator elements in the nickel alloy base, Al and Mg, are able to diffuse to the surface of the oxide during activation and ageing and that these elements are enriched at the interface after accelerated life

Thermally oxidized aluminum as catalyst-support layer for vertically aligned single-walled carbon nanotube growth using ethanol

Energy Technology Data Exchange (ETDEWEB)

Azam, Mohd Asyadi, E-mail: asyadi@jaist.ac.jp [School of Materials Science, Japan Advanced Institute of Science and Technology (JAIST), 1-1 Asahidai, Nomi, Ishikawa 923-1292 (Japan); Fujiwara, Akihiko [Research and Utilization Division, Japan Synchrotron Radiation Research Institute (JASRI), 1-1-1, Kouto, Sayo-cho, Sayo, Hyogo 679-5198 (Japan); Shimoda, Tatsuya [School of Materials Science, Japan Advanced Institute of Science and Technology (JAIST), 1-1 Asahidai, Nomi, Ishikawa 923-1292 (Japan)

2011-11-01

Characteristics and role of Al oxide (Al-O) films used as catalyst-support layer for vertical growth of single-walled carbon nanotubes (SWCNTs) were studied. EB-deposited Al films (20 nm) were thermally oxidized at 400 deg. C (10 min, static air) to produce the most appropriate surface structure of Al-O. Al-O catalyst-support layers were characterized using various analytical measurements, i.e., atomic force microscopy (AFM), X-ray photoelectron spectroscopy (XPS), and spectroscopy ellipsometry (SE). The thermally oxidized Al-O has a highly roughened surface, and also has the most suitable surface chemical states compared to other type of Al-O support layers. We suggest that the surface of thermally oxidized Al-O characterized in this work enhanced Co catalyst activity to promote the vertically aligned SWCNT growth.

Spinel-structured surface layers for facile Li ion transport and improved chemical stability of lithium manganese oxide spinel

Energy Technology Data Exchange (ETDEWEB)

Lee, Hae Ri [Center for Energy Convergence Research, Korea Institute of Science Technology, Hwarang-ro 14-gil 5, Seongbuk-gu, Seoul 136-791 (Korea, Republic of); Department of Chemical and Biological Engineering, Korea University, 145, Anam-ro, Seongbuk-gu, Seoul 136-701 (Korea, Republic of); Seo, Hyo Ree; Lee, Boeun; Cho, Byung Won [Center for Energy Convergence Research, Korea Institute of Science Technology, Hwarang-ro 14-gil 5, Seongbuk-gu, Seoul 136-791 (Korea, Republic of); Lee, Kwan-Young [Department of Chemical and Biological Engineering, Korea University, 145, Anam-ro, Seongbuk-gu, Seoul 136-701 (Korea, Republic of); Oh, Si Hyoung, E-mail: sho74@kist.re.kr [Center for Energy Convergence Research, Korea Institute of Science Technology, Hwarang-ro 14-gil 5, Seongbuk-gu, Seoul 136-791 (Korea, Republic of)

2017-01-15

Graphical abstract: Strategically-designed spinel-structured nano-scale surface layer, LiM{sub x}Mn{sup IV}{sub 1−x}O{sub 4}, featuring a high Li{sup +} ion conductivity and a good chemical stability was applied on Al-doped LiMn{sub 2}O{sub 4} spinel for the drastic improvement of the electrochemical performance at the elevated temperature as a promising cathode material for lithium rechargeable batteries. - Highlights: • Spinel-structured surface layer with a high Li-ion conductivity and a good chemical stability was prepared. • Simple wet process was developed to apply nano-scale surface layer on aluminum doped lithium manganese oxide spinel. • The properties of nano-scale surface layer were characterized by analytical tools including GITT, HR-TEM and XAS. • Materials with surface coating layer exhibit an excellent electrochemical performance at the elevated temperature. - Abstract: Li-ion conducting spinel-structured oxide layer with a manganese oxidation state close to being tetravalent was prepared on aluminum-doped lithium manganese oxide spinel for improving the electrochemical performances at the elevated temperatures. This nanoscale surface layer provides a good ionic conduction path for lithium ion transport to the core and also serves as an excellent chemical barrier for protecting the high-capacity core material from manganese dissolution into the electrolyte. In this work, a simple wet process was employed to prepare thin LiAlMnO{sub 4} and LiMg{sub 0.5}Mn{sub 1.5}O{sub 4} layers on the surface of LiAl{sub 0.1}Mn{sub 1.9}O{sub 4}. X-ray absorption studies revealed an oxidation state close to tetravalent manganese on the surface layer of coated materials. Materials with these surface coating layers exhibited excellent capacity retentions superior to the bare material, without undermining the lithium ion transport characteristics and the high rate performances.

Dual-Layer Oxidation-Protective Plasma-Sprayed SiC-ZrB2/Al2O3-Carbon Nanotube Coating on Graphite

Science.gov (United States)

Ariharan, S.; Sengupta, Pradyut; Nisar, Ambreen; Agnihotri, Ankur; Balaji, N.; Aruna, S. T.; Balani, Kantesh

2017-02-01

Graphite is used in high-temperature gas-cooled reactors because of its outstanding irradiation performance and corrosion resistance. To restrict its high-temperature (>873 K) oxidation, atmospheric-plasma-sprayed SiC-ZrB2-Al2O3-carbon nanotube (CNT) dual-layer coating was deposited on graphite substrate in this work. The effect of each layer was isolated by processing each component of the coating via spark plasma sintering followed by isothermal kinetic studies. Based on isothermal analysis and the presence of high residual thermal stress in the oxide scale, degradation appeared to be more severe in composites reinforced with CNTs. To avoid the complexity of analysis of composites, the high-temperature activation energy for oxidation was calculated for the single-phase materials only, yielding values of 11.8, 20.5, 43.5, and 4.5 kJ/mol for graphite, SiC, ZrB2, and CNT, respectively, with increased thermal stability for ZrB2 and SiC. These results were then used to evaluate the oxidation rate for the composites analytically. This study has broad implications for wider use of dual-layer (SiC-ZrB2/Al2O3) coatings for protecting graphite crucibles even at temperatures above 1073 K.

Characterization Of Oxide Layers Formed On 13CrMo4-5 Steel Operated For A Long Time At An Elevated Temperature

Directory of Open Access Journals (Sweden)

Gwoździk M.

2015-09-01

Full Text Available The paper contains results of studies into the formation of oxide layers on 13CrMo4-5 (15HM steel long-term operated at an elevated temperature. The oxide layer was studied on a surface and a cross-section at the inner and outer surface of the tube wall. The 13CrMo4-5 steel operated at the temperature of 470°C during 190,000 hours was investigated. X-ray structural examinations (XRD were carried out, microscope observation s using an optical, scanning microscope were performed. The native material chemical composition was analysed by means of emission spark spectroscopy, while that of oxide layers on a scanning microscope (EDS. The studies on the topography of the oxide layers comprised studies on the roughness plane, which were carried out using a AFM microscope designed for 2D and 3D studies on the surface. Mechanical properties of the oxide layer – steel (substrate were characterised on the basis of scratch test. The adhesion of oxide layers, friction force, friction coefficient, scratching depth were determined as well as the force at which the layer was delaminated.

Functional Layer-by-Layer Thin Films of Inducible Nitric Oxide (NO) Synthase Oxygenase and Polyethylenimine: Modulation of Enzyme Loading and NO-Release Activity.

Science.gov (United States)

Gunasekera, Bhagya; Abou Diwan, Charbel; Altawallbeh, Ghaith; Kalil, Haitham; Maher, Shaimaa; Xu, Song; Bayachou, Mekki

2018-03-07

Nitric oxide (NO) release counteracts platelet aggregation and prevents the thrombosis cascade in the inner walls of blood vessels. NO-release coatings also prevent thrombus formation on the surface of blood-contacting medical devices. Our previous work has shown that inducible nitric oxide synthase (iNOS) films release NO fluxes upon enzymatic conversion of the substrate l-arginine. In this work, we report on the modulation of enzyme loading in layer-by-layer (LbL) thin films of inducible nitric oxide synthase oxygenase (iNOSoxy) on polyethylenimine (PEI). The layer of iNOSoxy is electrostatically adsorbed onto the PEI layer. The pH of the iNOSoxy solution affects the amount of enzyme adsorbed. The overall negative surface charge of iNOSoxy in solution depends on the pH and hence determines the density of adsorbed protein on the positively charged PEI layer. We used buffered iNOSoxy solutions adjusted to pHs 8.6 and 7.0, while saline PEI solution was used at pH 7.0. Atomic force microscopy imaging of the outermost layer shows higher protein adsorption with iNOSoxy at pH 8.6 than with a solution of iNOSoxy at pH 7.0. Graphite electrodes with PEI/iNOSoxy films show higher catalytic currents for nitric oxide reduction mediated by iNOSoxy. The higher enzyme loading translates into higher NO flux when the enzyme-modified surface is exposed to a solution containing the substrate and a source of electrons. Spectrophotometric assays showed higher NO fluxes with iNOSoxy/PEI films built at pH 8.6 than with films built at pH 7.0. Fourier transform infrared analysis of iNOSoxy adsorbed on PEI at pH 8.6 and 7.0 shows structural differences of iNOSoxy in films, which explains the observed changes in enzymatic activity. Our findings show that pH provides a strategy to optimize the NOS loading and enzyme activity in NOS-based LbL thin films, which enables improved NO release with minimum layers of PEI/NOS.

CANDU fuel sheath integrity and oxide layer thickness determination by Eddy current technique

International Nuclear Information System (INIS)

Gheorghe, Gabriela; Man, Ion; Parvan, Marcel; Valeca, Serban

2010-01-01

This paper presents results concerning the integrity assessment of the fuel elements cladding and measurements of the oxide layer on sheaths, using the eddy current technique. Flaw detection using eddy current provides information about the integrity of fuel element sheath or presence of defects in the sheath produced by irradiation. The control equipment consists of a flaw detector with eddy currents, operable in the frequency range 10 Hz to 10 MHz, and a differential probe. The calibration of the flaw detector is done using artificial defects (longitudinal, transversal, external and internal notches, bored and unbored holes) obtained on Zircaloy-4 tubes identical to those out of which the sheath of the CANDU fuel element is manufactured (having a diameter of 13.08 mm and a wall thickness of 0.4 mm). When analyzing the behavior of the fuel elements' cladding facing the corrosion is important to know the thickness of the zirconium oxide layer. The calibration of the device measuring the thickness of the oxide layer is done using a Zircaloy-4 tube identical to that which the cladding of the CANDU fuel element is manufactured of, and calibration foils, as well. (authors)

Self-assembly surface modified indium-tin oxide anodes for single-layer light-emitting diodes

CERN Document Server

Morgado, J; Charas, A; Matos, M; Alcacer, L; Cacialli, F

2003-01-01

We study the effect of indium-tin oxide surface modification by self assembling of highly polar molecules on the performance of single-layer light-emitting diodes (LEDs) fabricated with polyfluorene blends and aluminium cathodes. We find that the efficiency and light-output of such LEDs is comparable to, and sometimes better than, the values obtained for LEDs incorporating a hole injection layer of poly(3,4-ethylene dioxythiophene) doped with polystyrene sulphonic acid. This effect is attributed to the dipole-induced work function modification of indium-tin oxide.

Self-assembly surface modified indium-tin oxide anodes for single-layer light-emitting diodes

International Nuclear Information System (INIS)

Morgado, Jorge; Barbagallo, Nunzio; Charas, Ana; Matos, Manuel; Alcacer, Luis; Cacialli, Franco

2003-01-01

We study the effect of indium-tin oxide surface modification by self assembling of highly polar molecules on the performance of single-layer light-emitting diodes (LEDs) fabricated with polyfluorene blends and aluminium cathodes. We find that the efficiency and light-output of such LEDs is comparable to, and sometimes better than, the values obtained for LEDs incorporating a hole injection layer of poly(3,4-ethylene dioxythiophene) doped with polystyrene sulphonic acid. This effect is attributed to the dipole-induced work function modification of indium-tin oxide

Direct synthesis of few-layer graphene supported platinum nanocatalyst for methanol oxidation

Science.gov (United States)

Tan, Hong; Ma, Xiaohui; Sheng, Leimei; An, Kang; Yu, Liming; Zhao, Hongbin; Xu, Jiaqiang; Ren, Wei; Zhao, Xinluo

2014-11-01

High-crystalline few-layer graphene supported Pt nanoparticles have been synthesized by arc discharge evaporation of carbon electrodes containing Pt element. A high-temperature treatment under hydrogen atmosphere has been carried out to obtain a new type of Pt/graphene catalyst for methanol oxidation in direct methanol fuel cell. The morphology and structure characterizations of as-grown few-layer graphene supported Pt nanoparticles and Pt/graphene catalysts have been studied by Raman spectroscopy, scanning electron microscopy with energy-dispersive spectroscopy, and high-resolution transmission electron microscopy. Cyclic voltammograms and chronoamperometric curves show that our present Pt/graphene catalysts have larger current density for methanol oxidation, higher tolerance to carbon monoxide poisoning, and better stability during the operating procedure, compared to commercial Pt/C catalysts.

Self-aligned periodic Ni nano dots embedded in nano-oxide layer

International Nuclear Information System (INIS)

Doi, M.; Izumi, M.; Kawasaki, S.; Miyake, K.; Sahashi, M.

2007-01-01

The Ni nano constriction dots embedded in the Ta-nano-oxide layer (NOL) was prepared by the ion beam sputtering (IBS) method. After the various conditions of the oxidations, the structural analyses of the NOL were performed by RHEED, AES and in situ STM/AFM observations. From the current image of the conductive AFM for NOL, the periodically aligned metallic dots with the size around 5-10 nm were successfully observed. The mechanism of the formation of the self-organized aligned Ni nano constriction dots is discussed from the standpoint of the grain size, the crystal orientation, the preferred oxidation of Ta at the diffused interface

Smooth Interfacial Scavenging for Resistive Switching Oxide via the Formation of Highly Uniform Layers of Amorphous TaOx.

Science.gov (United States)

Tsurumaki-Fukuchi, Atsushi; Nakagawa, Ryosuke; Arita, Masashi; Takahashi, Yasuo

2018-02-14

We demonstrate that the inclusion of a Ta interfacial layer is a remarkably effective strategy for forming interfacial oxygen defects at metal/oxide junctions. The insertion of an interfacial layer of a reactive metal, that is, a "scavenging" layer, has been recently proposed as a way to create a high concentration of oxygen defects at an interface in redox-based resistive switching devices, and growing interest has been given to the underlying mechanism. Through structural and chemical analyses of Pt/metal/SrTiO 3 /Pt structures, we reveal that the rate and amount of oxygen scavenging are not directly determined by the formation free energies in the oxidation reactions of the scavenging metal and unveil the important roles of oxygen diffusibility. Active oxygen scavenging and highly uniform oxidation via scavenging are revealed for a Ta interfacial layer with high oxygen diffusibility. In addition, the Ta scavenging layer is shown to exhibit a highly uniform structure and to form a very flat interface with SrTiO 3 , which are advantageous for the fabrication of a steep metal/oxide contact.

Determination of the composition of surface optical layers prepared with the use of rare earth and zirconium oxides

International Nuclear Information System (INIS)

Mishchenko, V.T.; Shilova, L.P.; Shkol'nikova, T.M.

1991-01-01

Simple titrimetric and gravimetric methods for determination of optical oxide layers (rare earth and zirconium oxides), sputtered on glass or quartz sublayer, have been developed. The minimal determined oxide mass in surface layers is equal to 0.01 mg in titrimetric determination and 0.1 mg - in gravimetric one. It is shown that composition of films and pellets, used for film sputtering, is identical

All-inorganic inverse perovskite solar cells using zinc oxide nanocolloids on spin coated perovskite layer

Science.gov (United States)

Shibayama, Naoyuki; Kanda, Hiroyuki; Yusa, Shin-ichi; Fukumoto, Shota; Baranwal, Ajay K.; Segawa, Hiroshi; Miyasaka, Tsutomu; Ito, Seigo

2017-07-01

We confirmed the influence of ZnO nanoparticle size and residual water on performance of all inorganic perovskite solar cells. By decreasing the size of the ZnO nanoparticles, the short-circuit current density ( Jsc) and open circuit photovoltage ( Voc) values are increased and the conversion efficiency is improved. Although the Voc value is not affected by the influence of residual water in the solution for preparing the ZnO layer, the Jsc value drops greatly. As a result, it was found that it is important to use the oxide nanoparticles with a small particle diameter and to reduce the water content in the oxide forming material in order to manufacture a highly efficient all inorganic perovskite solar cells.

Periodontitis and increase in circulating oxidative stress

Directory of Open Access Journals (Sweden)

Takaaki Tomofuji

2009-05-01

Full Text Available Reactive oxygen species (ROS are products of normal cellular metabolism. However, excessive production of ROS oxidizes DNA, lipids and proteins, inducing tissue damage. Studies have shown that periodontitis induces excessive ROS production in periodontal tissue. When periodontitis develops, ROS produced in the periodontal lesion diffuse into the blood stream, resulting in the oxidation of blood molecules (circulating oxidative stress. Such oxidation may be detrimental to systemic health. For instance, previous animal studies suggested that experimental periodontitis induces oxidative damage of the liver and descending aorta by increasing circulating oxidative stress. In addition, it has been revealed that clinical parameters in chronic periodontitis patients showed a significant improvement 2 months after periodontal treatment, which was accompanied by a significant reduction of reactive oxygen metabolites in plasma. Improvement of periodontitis by periodontal treatment could reduce the occurrence of circulating oxidative stress. Furthermore, recent studies indicate that the increase in circulating oxidative stress following diabetes mellitus and inappropriate nutrition damages periodontal tissues. In such cases, therapeutic approaches to systemic oxidative stress might be necessary to improve periodontal health.

Atomic layer deposition of high-mobility hydrogen-doped zinc oxide

NARCIS (Netherlands)

Macco, B.; Knoops, H.C.M.; Verheijen, M.A.; Beyer, W.; Creatore, M.; Kessels, W.M.M.

2017-01-01

In this work, atomic layer deposition (ALD) has been employed to prepare high-mobility H-doped zinc oxide (ZnO:H) films. Hydrogen doping was achieved by interleaving the ZnO ALD cycles with H2 plasma treatments. It has been shown that doping with H2 plasma offers key advantages over traditional

Fabrication of Inverted Bulk-Heterojunction Organic Solar Cell with Ultrathin Titanium Oxide Nanosheet as an Electron-Extracting Buffer Layer

Science.gov (United States)

Itoh, Eiji; Maruyama, Yasutake; Fukuda, Katsutoshi

2012-02-01

The contributions and deposition conditions of ultrathin titania nanosheet (TN) crystallites were studied in an inverted bulk-heterojunction (BHJ) cell in indium tin oxide (ITO)/titania nanosheet/poly(3-hexylthiophene) (P3HT):phenyl-C61-butyric acid methylester (PCBM) active layer/MoOx/Ag multilayered photovoltaic devices. Only one or two layers of poly(diallyldimethylammonium chloride) (PDDA) and TN multilayered film deposited by the layer-by-layer deposition technique effectively decreased the leakage current and increased both open circuit voltage (VOC) and fill factor (FF), and power conversion efficiency (η) was increased nearly twofold by the insertion of two TN layers. The deposition of additional TN layers caused the reduction in FF, and the abnormal S-shaped curves above VOC for the devices with three and four TN layers were ascribed to the interfacial potential barrier at the ITO/TN interface and the series resistance across the multilayers of TN and PDDA. The performance of the BHJ cell with TN was markedly improved, and the S-shaped curves were eliminated following the the insertion of anatase-phase titanium dioxide between the ITO and TN layers owing to the decrease in the interfacial potential barrier.

A versatile single molecular precursor for the synthesis of layered oxide cathode materials for Li-ion batteries.

Science.gov (United States)

Li, Maofan; Liu, Jiajie; Liu, Tongchao; Zhang, Mingjian; Pan, Feng

2018-02-01

A carbonyl-bridged single molecular precursor LiTM(acac) 3 [transition metal (TM) = cobalt/manganese/nickel (Co/Mn/Ni), acac = acetylacetone], featuring a one-dimensional chain structure, was designed and applied to achieve the layered oxide cathode materials: LiTMO 2 (TM = Ni/Mn/Co, NMC). As examples, layered oxides, primary LiCoO 2 , binary LiNi 0.8 Co 0.2 O 2 and ternary LiNi 0.5 Mn 0.3 Co 0.2 O 2 were successfully prepared to be used as cathode materials. When they are applied to lithium-ion batteries (LIBs), all exhibit good electrochemical performance because of their unique morphology and great uniformity of element distribution. This versatile precursor is predicted to accommodate many other metal cations, such as aluminum (Al 3+ ), iron (Fe 2+ ), and sodium (Na + ), because of the flexibility of organic ligand, which not only facilitates the doping-modification of the NMC system, but also enables synthesis of Na-ion layered oxides. This opens a new direction of research for the synthesis of high-performance layered oxide cathode materials for LIBs.

Nanostructured antistatic and antireflective thin films made of indium tin oxide and silica over-coat layer

Science.gov (United States)

Cho, Young-Sang; Hong, Jeong-Jin; Yang, Seung-Man; Choi, Chul-Jin

2010-08-01

Stable dispersion of colloidal indium tin oxide nanoparticles was prepared by using indium tin oxide nanopowder, organic solvent, and suitable dispersants through attrition process. Various comminution parameters during the attrition step were studied to optimize the process for the stable dispersion of indium tin oxide sol. The transparent and conductive films were fabricated on glass substrate using the indium tin oxide sol by spin coating process. To obtain antireflective function, partially hydrolyzed alkyl silicate was deposited as over-coat layer on the pre-fabricated indium tin oxide film by spin coating technique. This double-layered structure of the nanostructured film was characterized by measuring the surface resistance and reflectance spectrum in the visible wavelength region. The final film structure was enough to satisfy the TCO regulations for EMI shielding purposes.

Interface modification of organic photovoltaics by combining molybdenum oxide (MoO{sub x}) and molecular template layer

Energy Technology Data Exchange (ETDEWEB)

Duan, Haichao [Institute of Super-microstructure and Ultrafast Process in Advanced Materials, School of Physics and Electronics, Central South University, Changsha, Hunan 410083 (China); Hunan Key Laboratory for Super-microstructure and Ultrafast Process, School of Physics and Electronics, Central South University, Changsha, Hunan 410083 (China); Yang, Junliang, E-mail: junliang.yang@csu.edu.cn [Institute of Super-microstructure and Ultrafast Process in Advanced Materials, School of Physics and Electronics, Central South University, Changsha, Hunan 410083 (China); Hunan Key Laboratory for Super-microstructure and Ultrafast Process, School of Physics and Electronics, Central South University, Changsha, Hunan 410083 (China); Fu, Lin; Xiong, Jian; Yang, Bingchu; Ouyang, Jun; Zhou, Conghua; Huang, Han [Institute of Super-microstructure and Ultrafast Process in Advanced Materials, School of Physics and Electronics, Central South University, Changsha, Hunan 410083 (China); Hunan Key Laboratory for Super-microstructure and Ultrafast Process, School of Physics and Electronics, Central South University, Changsha, Hunan 410083 (China); Gao, Yongli [Institute of Super-microstructure and Ultrafast Process in Advanced Materials, School of Physics and Electronics, Central South University, Changsha, Hunan 410083 (China); Hunan Key Laboratory for Super-microstructure and Ultrafast Process, School of Physics and Electronics, Central South University, Changsha, Hunan 410083 (China); Department of Physics and Astronomy, University of Rochester, Rochester, NY 14627 (United States)

2015-01-01

We report discrete heterojunction small molecular organic photovoltaics (OPVs) with enhanced performance by modifying the interface using molybdenum oxide (MoO{sub x}) and molecular template layer perylene-3,4,9,10-tetracarboxylic-3,4,9,10-dianhydride (PTCDA). A large increase in open-circuit voltage was obtained in copper phthalocyanine/fullerene, i.e., CuPc/C{sub 60} and CuPc/PCBM, discrete planar heterojunction photovoltaics with an insertion of 5 nm MoO{sub x} hole transport layer at the interface between the anode electrode and the CuPc donor layer. It results from the band bending at the interface and the pinning of the highest occupied molecular orbital level of CuPc to the Fermi level of MoO{sub x} due to the defect states (oxygen vacancies) in MoO{sub x} thin films. Moreover, the short-circuit current showed an efficient improvement by inserting a 1 nm PTCDA layer at the interface between the MoO{sub x} layer and the CuPc layer. The PTCDA layer induces the growth of CuPc thin film with lying-down molecular arrangement, supporting the charge transports along the vertical direction. The power conversion efficiencies of CuPc/C{sub 60} and CuPc/PCBM discrete planar heterojunction photovoltaic devices were improved from about 0.80% to 1.50% with inserting both MoO{sub x} and PTCDA layers. The results suggest that the performance of organic discrete planar heterojunction photovoltaics could be optimized by interface modification with combining hole transport layer and molecular template layer, which are potentially suitable for other highly efficient OPVs, such as small molecular tandem OPVs. - Highlights: • Organic small molecule photovoltaics were fabricated by interface modification. • An inserted molybdenum oxide layer largely enhances open-circuit voltage. • An inserted molecular template layer dramatically improves short-circuit current. • The power conversion efficiencies are almost doubled with interface modification.

High temperature steam oxidation of Al3Ti-based alloys for the oxidation-resistant surface layer on Zr fuel claddings

International Nuclear Information System (INIS)

Park, Jeong-Yong; Kim, Il-Hyun; Jung, Yang-Il; Kim, Hyun-Gil; Park, Dong-Jun; Choi, Byung-Kwon

2013-01-01

We investigated the feasibility to apply Al 3 Ti-based alloys as the surface layer for improving the oxidation resistance of Zr fuel claddings under accident conditions. Two types of Al 3 Ti-based alloys with the compositions of Al–25Ti–10Cr and Al–21Ti–23Cr in atomic percent were prepared by arc-melting followed by homogenization annealing at 1423 K for 48 h. Al–25Ti–10Cr alloy showed an L1 2 quasi-single phase microstructure with a lot of needle-shaped minor phase and pores. Al–21Ti–23Cr alloy consisted of an L1 2 matrix and Cr 2 Al as the second phase. Al 3 Ti-based alloys showed an extremely low oxidation rate in a 1473 K steam for up to 7200 s when compared to Zircaloy-4. Both alloys exhibited almost the same oxidation rate in the early stage of oxidation, but Al–25Ti–10Cr showed a little lower oxidation rate after 4000 s than Al–21Ti–23Cr. The difference in the oxidation rate between two types of Al 3 Ti-based alloys was too marginal to distinguish the oxidation behavior of each alloy. The resultant oxide exhibited almost the same characteristics in both alloys even though the microstructure was explicitly distinguished from each other. The crystal structure of the oxide formed up to 2000 s was identified as Al 2 O 3 in both alloys. The oxide morphology consisted of columnar grains whose length was almost identical to the average oxide thickness. On the basis of the results obtained, it is considered that Al 3 Ti-based alloy is one of the promising candidates for the oxidation-resistant surface layer on Zr fuel claddings

Vanadium oxide thin films deposited on silicon dioxide buffer layers by magnetron sputtering

International Nuclear Information System (INIS)

Chen Sihai; Ma Hong; Wang Shuangbao; Shen Nan; Xiao Jing; Zhou Hao; Zhao Xiaomei; Li Yi; Yi Xinjian

2006-01-01

Thin films made by vanadium oxide have been obtained by direct current magnetron sputtering method on SiO 2 buffer layers. A detailed electrical and structural characterization has been performed on the deposited films by four-point probe method and scanning electron microscopy (SEM). At room temperature, the four-point probe measurement result presents the resistance of the film to be 25 kU/sheet. The temperature coefficient of resistance is - 2.0%/K. SEM image indicates that the vanadium oxide exhibits a submicrostructure with lamella size ranging from 60 nm to 300 nm. A 32 x 32-element test microbolometer was fabricated based on the deposited thin film. The infrared response testing showed that the response was 200 mV. The obtained results allow us to conclude that the vanadium oxide thin films on SiO 2 buffer layers is suitable for uncooled focal plane arrays applications

Atomic layer deposition of titanium oxide films on As-synthesized magnetic Ni particles: Magnetic and safety properties

International Nuclear Information System (INIS)

Uudeküll, Peep; Kozlova, Jekaterina; Mändar, Hugo; Link, Joosep; Sihtmäe, Mariliis; Käosaar, Sandra; Blinova, Irina; Kasemets, Kaja; Kahru, Anne; Stern, Raivo; Tätte, Tanel; Kukli, Kaupo; Tamm, Aile

2017-01-01

Spherical nickel particles with size in the range of 100–400 nm were synthesized by non-aqueous liquid phase benzyl alcohol method. Being developed for magnetically guided biomedical applications, the particles were coated by conformal and antimicrobial thin titanium oxide films by atomic layer deposition. The particles retained their size and crystal structure after the deposition of oxide films. The sensitivity of the coated particles to external magnetic fields was increased compared to that of the uncoated powder. Preliminary toxicological investigations on microbial cells and small aquatic crustaceans revealed non-toxic nature of the synthesized particles.

Atomic layer deposition of titanium oxide films on As-synthesized magnetic Ni particles: Magnetic and safety properties

Energy Technology Data Exchange (ETDEWEB)

Uudeküll, Peep, E-mail: peep.uudekull@ut.ee [Institute of Physics, University of Tartu, W. Ostwaldi Str.1, 50411 Tartu (Estonia); Kozlova, Jekaterina; Mändar, Hugo [Institute of Physics, University of Tartu, W. Ostwaldi Str.1, 50411 Tartu (Estonia); Link, Joosep [Laboratory of Chemical Physics, National Institute of Chemical Physics and Biophysics, Akadeemia tee 23, 12618 Tallinn (Estonia); Sihtmäe, Mariliis [Laboratory of Environmental Toxicology, National Institute of Chemical Physics and Biophysics, Akadeemia tee 23, 12618 Tallinn (Estonia); Käosaar, Sandra [Laboratory of Environmental Toxicology, National Institute of Chemical Physics and Biophysics, Akadeemia tee 23, 12618 Tallinn (Estonia); Faculty of Chemical and Materials Technology, Tallinn University of Technology, Ehitajate tee 5, 19086 Tallinn (Estonia); Blinova, Irina; Kasemets, Kaja; Kahru, Anne [Laboratory of Environmental Toxicology, National Institute of Chemical Physics and Biophysics, Akadeemia tee 23, 12618 Tallinn (Estonia); Stern, Raivo [Laboratory of Chemical Physics, National Institute of Chemical Physics and Biophysics, Akadeemia tee 23, 12618 Tallinn (Estonia); Tätte, Tanel [Institute of Physics, University of Tartu, W. Ostwaldi Str.1, 50411 Tartu (Estonia); Kukli, Kaupo [Institute of Physics, University of Tartu, W. Ostwaldi Str.1, 50411 Tartu (Estonia); University of Helsinki, Department of Chemistry, P.O. Box 55, FI-00014 Helsinki (Finland); Tamm, Aile [Institute of Physics, University of Tartu, W. Ostwaldi Str.1, 50411 Tartu (Estonia)

2017-05-01

Spherical nickel particles with size in the range of 100–400 nm were synthesized by non-aqueous liquid phase benzyl alcohol method. Being developed for magnetically guided biomedical applications, the particles were coated by conformal and antimicrobial thin titanium oxide films by atomic layer deposition. The particles retained their size and crystal structure after the deposition of oxide films. The sensitivity of the coated particles to external magnetic fields was increased compared to that of the uncoated powder. Preliminary toxicological investigations on microbial cells and small aquatic crustaceans revealed non-toxic nature of the synthesized particles.

Surface texture of single-crystal silicon oxidized under a thin V{sub 2}O{sub 5} layer

Energy Technology Data Exchange (ETDEWEB)

Nikitin, S. E., E-mail: nikitin@mail.ioffe.ru; Verbitskiy, V. N.; Nashchekin, A. V.; Trapeznikova, I. N.; Bobyl, A. V.; Terukova, E. E. [Russian Academy of Sciences, Ioffe Physical–Technical Institute (Russian Federation)

2017-01-15

The process of surface texturing of single-crystal silicon oxidized under a V{sub 2}O{sub 5} layer is studied. Intense silicon oxidation at the Si–V{sub 2}O{sub 5} interface begins at a temperature of 903 K which is 200 K below than upon silicon thermal oxidation in an oxygen atmosphere. A silicon dioxide layer 30–50 nm thick with SiO{sub 2} inclusions in silicon depth up to 400 nm is formed at the V{sub 2}O{sub 5}–Si interface. The diffusion coefficient of atomic oxygen through the silicon-dioxide layer at 903 K is determined (D ≥ 2 × 10{sup –15} cm{sup 2} s{sup –1}). A model of low-temperature silicon oxidation, based on atomic oxygen diffusion from V{sub 2}O{sub 5} through the SiO{sub 2} layer to silicon, and SiO{sub x} precipitate formation in silicon is proposed. After removing the V{sub 2}O{sub 5} and silicon-dioxide layers, texture is formed on the silicon surface, which intensely scatters light in the wavelength range of 300–550 nm and is important in the texturing of the front and rear surfaces of solar cells.

Acid leaching of oxide-sulphide copper ore prior the flotation: A way for an increased metal recovery

Directory of Open Access Journals (Sweden)

Sokić Miroslav D.

2015-01-01

Full Text Available Copper mine "Cerovo"- East Serbia as well as the other ore bodies in its vicinity contain a significant amount of oxide copper minerals in their uper layers (>40%. Processing of such mixed ores by the existing concentration technologies leads to a substantial copper losses (<60%. Reduction of "oxide copper", by acid leaching prior the flotation concentration, can increase the overall copper efficiency up to more than 70% in the single-stage leaching, achieving an efficiency in the flotation concentration stage higher than 75%. Based on the performed experimental results the flow sheet for processing of the mixed oxide-sulphide copper ore is proposed.

Single-Step Electrophoretic Deposition of Non-noble Metal Catalyst Layer with Low Onset Voltage for Ethanol Electro-oxidation.

Science.gov (United States)

Ahmadi Daryakenari, Ahmad; Hosseini, Davood; Ho, Ya-Lun; Saito, Takumi; Apostoluk, Aleksandra; Müller, Christoph R; Delaunay, Jean-Jacques

2016-06-29

A single-step electrophoretic deposition (EPD) process is used to fabricate catalyst layers which consist of nickel oxide nanoparticles attached on the surface of nanographitic flakes. Magnesium ions present in the colloid charge positively the flake's surface as they attach on it and are also used to bind nanographitic flakes together. The fabricated catalyst layers showed a very low onset voltage (-0.2 V vs Ag/AgCl) in the electro-oxidation of ethanol. To clarify the occurring catalytic mechanism, we performed annealing treatment to produce samples having a different electrochemical behavior with a large onset voltage. Temperature dependence measurements of the layer conductivity pointed toward a charge transport mechanism based on hopping for the nonannealed layers, while the drift transport is observed in the annealed layers. The hopping charge transport is responsible for the appearance of the low onset voltage in ethanol electro-oxidation.

Effect of additive gases and injection methods on chemical dry etching of silicon nitride, silicon oxynitride, and silicon oxide layers in F2 remote plasmas

International Nuclear Information System (INIS)

Yun, Y. B.; Park, S. M.; Kim, D. J.; Lee, N.-E.; Kim, K. S.; Bae, G. H.

2007-01-01

The authors investigated the effects of various additive gases and different injection methods on the chemical dry etching of silicon nitride, silicon oxynitride, and silicon oxide layers in F 2 remote plasmas. N 2 and N 2 +O 2 gases in the F 2 /Ar/N 2 and F 2 /Ar/N 2 /O 2 remote plasmas effectively increased the etch rate of the layers. The addition of direct-injected NO gas increased the etch rates most significantly. NO radicals generated by the addition of N 2 and N 2 +O 2 or direct-injected NO molecules contributed to the effective removal of nitrogen and oxygen in the silicon nitride and oxide layers, by forming N 2 O and NO 2 by-products, respectively, and thereby enhancing SiF 4 formation. As a result of the effective removal of the oxygen, nitrogen, and silicon atoms in the layers, the chemical dry etch rates were enhanced significantly. The process regime for the etch rate enhancement of the layers was extended at elevated temperature

Barrier layer arrangement for conductive layers on silicon substrates

International Nuclear Information System (INIS)

Hung, L.S.; Agostinelli, J.A.

1990-01-01

This patent describes a circuit element comprised of a silicon substrate and a conductive layer located on the substrate. It is characterized in that the conductive layer consists essentially of a rare earth alkaline earth copper oxide and a barrier layer triad is interposed between the silicon substrate and the conductive layer comprised of a first triad layer located adjacent the silicon substrate consisting essentially of silica, a third triad layer remote from the silicon substrate consisting essentially of a least one Group 4 heavy metal oxide, and a second triad layer interposed between the first and third triad layers consisting essentially of a mixture of silica and at lease one Group 4 heavy metal oxide

Synthetic Control of Kinetic Reaction Pathway and Cationic Ordering in High-Ni Layered Oxide Cathodes

Energy Technology Data Exchange (ETDEWEB)

Wang, Dawei [Sustainable Energy Technologies Department, Brookhaven National Laboratory, Upton NY 11973 USA; Collaborative Innovation Center of Chemistry for Energy Materials, State Key Laboratory Physical Chemistry Solid Surfaces, Department of Chemistry, Xiamen University, Xiamen Fujian 361005 China; Kou, Ronghui [X-Ray Science Division, Advanced Photon Source, Argonne National Laboratory, Argonne IL 60439 USA; Ren, Yang [X-Ray Science Division, Advanced Photon Source, Argonne National Laboratory, Argonne IL 60439 USA; Sun, Cheng-Jun [X-Ray Science Division, Advanced Photon Source, Argonne National Laboratory, Argonne IL 60439 USA; Zhao, Hu [Sustainable Energy Technologies Department, Brookhaven National Laboratory, Upton NY 11973 USA; Zhang, Ming-Jian [Sustainable Energy Technologies Department, Brookhaven National Laboratory, Upton NY 11973 USA; School of Advanced Materials, Peking University Shenzhen Graduate School, Shenzhen Guangdong 518055 P. R. China; Li, Yan [Chemical Sciences and Engineering Division, Argonne National Laboratory, Argonne IL 60439 USA; Huq, Ashifia [Chemical and Engineering Materials Division, Oak Ridge National Laboratory, Oak Ridge TN 37831 USA; Ko, J. Y. Peter [The Cornell High Energy Synchrotron Source, Cornell University, Ithaca NY 14853 USA; Pan, Feng [School of Advanced Materials, Peking University Shenzhen Graduate School, Shenzhen Guangdong 518055 P. R. China; Sun, Yang-Kook [Department of Energy Engineering, Hanyang University, Seoul 133-791 South Korea; Yang, Yong [Collaborative Innovation Center of Chemistry for Energy Materials, State Key Laboratory Physical Chemistry Solid Surfaces, Department of Chemistry, Xiamen University, Xiamen Fujian 361005 China; Amine, Khalil [Chemical Sciences and Engineering Division, Argonne National Laboratory, Argonne IL 60439 USA; Bai, Jianming [National Synchrotron Light Source II, Brookhaven National Laboratory, Upton NY 11973 USA; Chen, Zonghai [Chemical Sciences and Engineering Division, Argonne National Laboratory, Argonne IL 60439 USA; Wang, Feng [Sustainable Energy Technologies Department, Brookhaven National Laboratory, Upton NY 11973 USA

2017-08-25

Nickel-rich layered transition metal oxides, LiNi1-x(MnCo)(x)O-2 (1-x >= 0.5), are appealing candidates for cathodes in next-generation lithium-ion batteries (LIBs) for electric vehicles and other large-scale applications, due to their high capacity and low cost. However, synthetic control of the structural ordering in such a complex quaternary system has been a great challenge, especially in the presence of high Ni content. Herein, synthesis reactions for preparing layered LiNi0.7Mn0.15Co0.15O2 (NMC71515) by solid-state methods are investigated through a combination of time-resolved in situ high-energy X-ray diffraction and absorption spectroscopy measurements. The real-time observation reveals a strong temperature dependence of the kinetics of cationic ordering in NMC71515 as a result of thermal-driven oxidation of transition metals and lithium/oxygen loss that concomitantly occur during heat treatment. Through synthetic control of the kinetic reaction pathway, a layered NMC71515 with low cationic disordering and a high reversible capacity is prepared in air. The findings may help to pave the way for designing high-Ni layered oxide cathodes for LIBs.

Cyclic etching of tin-doped indium oxide using hydrogen-induced modified layer

Science.gov (United States)

Hirata, Akiko; Fukasawa, Masanaga; Nagahata, Kazunori; Li, Hu; Karahashi, Kazuhiro; Hamaguchi, Satoshi; Tatsumi, Tetsuya

2018-06-01

The rate of etching of tin-doped indium oxide (ITO) and the effects of a hydrogen-induced modified layer on cyclic, multistep thin-layer etching were investigated. It was found that ITO cyclic etching is possible by precisely controlling the hydrogen-induced modified layer. Highly selective etching of ITO/SiO2 was also investigated, and it was suggested that cyclic etching by selective surface adsorption of Si can precisely control the etch rates of ITO and SiO2, resulting in an almost infinite selectivity for ITO over SiO2 and in improved profile controllability.

Optoelectronic devices, low temperature preparation methods, and improved electron transport layers

KAUST Repository

Eita, Mohamed S.

2016-08-04

An optoelectronic device such as a photovoltaic device which has at least one layer, such as an electron transport layer, which comprises a plurality of alternating, oppositely charged layers including metal oxide layers. The metal oxide can be zinc oxide. The plurality of layers can be prepared by layer-by-layer processing in which alternating layers are built up step-by-step due to electrostatic attraction. The efficiency of the device can be increased by this processing method compared to a comparable method like sputtering. The number of layers can be controlled to improve device efficiency. Aqueous solutions can be used which is environmentally friendly. Annealing can be avoided. A quantum dot layer can be used next to the metal oxide layer to form a quantum dot heterojunction solar device.

Investigation of the Dissolution-Reformation Cycle of the Passive Oxide Layer on NiTi Orthodontic Archwires

Science.gov (United States)

Uzer, B.; Birer, O.; Canadinc, D.

2017-09-01

Dissolution-reformation cycle of the passive oxide layer on the nickel-titanium (NiTi) orthodontic archwires was investigated, which has recently been recognized as one of the key parameters dictating the biocompatibility of archwires. Specifically, commercially available NiTi orthodontic archwires were immersed in artificial saliva solutions of different pH values (2.3, 3.3, and 4.3) for four different immersion periods: 1, 7, 14, and 30 days. Characterization of the virgin and tested samples revealed that the titanium oxide layer on the NiTi archwire surfaces exhibit a dissolution-reformation cycle within the first 14 days of the immersion period: the largest amount of Ni ion release occurred within the first week of immersion, while it significantly decreased during the reformation period from day 7 to day 14. Furthermore, the oxide layer reformation was catalyzed on the grooves within the peaks and valleys due to relatively larger surface energy of these regions, which eventually decreased the surface roughness significantly within the reformation period. Overall, the current results clearly demonstrate that the analyses of dissolution-reformation cycle of the oxide layer in orthodontic archwires, surface roughness, and ion release behavior constitute utmost importance in order to ensure both the highest degree of biocompatibility and an efficient medical treatment.

Synthesis of Three-Dimensional Nanoporous Li-Rich Layered Cathode Oxides for High Volumetric and Power Energy Density Lithium-Ion Batteries.

Science.gov (United States)

Qiu, Bao; Yin, Chong; Xia, Yonggao; Liu, Zhaoping

2017-02-01

As rechargeable Li-ion batteries have expanded their applications into on-board energy storage for electric vehicles, the energy and power must be increased to meet the new demands. Li-rich layered oxides are one of the most promising candidate materials; however, it is very difficult to make them compatible with high volumetric energy density and power density. Here, we develop an innovative approach to synthesize three-dimensional (3D) nanoporous Li-rich layered oxides Li[Li 0.144 Ni 0.136 Co 0.136 Mn 0.544 ]O 2 , directly occurring at deep chemical delithiation with carbon dioxide. It is found that the as-prepared material presents a micrometer-sized spherical structure that is typically composed of interconnected nanosized subunits with narrow distributed pores at 3.6 nm. As a result, this unique 3D micro-/nanostructure not only has a high tap density over 2.20 g cm -3 but also exhibits excellent rate capability (197.6 mA h g -1 at 1250 mA g -1 ) as an electrode. The excellent electrochemical performance is ascribed to the unique nanoporous micro-nanostructures, which facilitates the Li + diffusion and enhances the structural stability of the Li-rich layered cathode materials. Our work offers a comprehensive designing strategy to construct 3D nanoporous Li-rich layered oxides for both high volumetric energy density and power density in Li-ion batteries.

Graphene oxide and reduced graphene oxide studied by the XRD, TEM and electron spectroscopy methods

International Nuclear Information System (INIS)

Stobinski, L.; Lesiak, B.; Malolepszy, A.; Mazurkiewicz, M.; Mierzwa, B.; Zemek, J.; Jiricek, P.; Bieloshapka, I.

2014-01-01

Highlights: • Graphene oxide (FL-GOc) and reduced graphene oxide (FL-RGOc): XRD, TEM, XPS, REELS. • FL-GOc: stacking nanostructure—22 × 6 nm (DxH), 0.9 nm layers separation (XRD). • FL-RGOc: stacking nanostructure—8 × 1 nm (DxH), 0.4 nm layers separation (XRD). • Reduction: oxygen group degradation, decreasing distance between graphene layers. • Number of graphene layers in stacking nanostructure: 6–7 (FL-GOc), 2–3 (FL-RGOc). - Abstract: The commercial and synthesised few-layer graphene oxide, prepared using oxidation reactions, and few-layer reduced graphene oxide samples were structurally and chemically investigated by the X-ray diffraction (XRD), transmission electron microscopy (TEM) and electron spectroscopy methods, i.e. X-ray photoelectron spectroscopy (XPS) and reflection electron energy loss spectroscopy (REELS). The commercial graphene oxide (FL-GOc) shows a stacking nanostructure of about 22 × 6 nm average diameter by height with the distance of 0.9 nm between 6-7 graphene layers, whereas the respective reduced graphene oxide (FL-RGOc)—about 8 × 1 nm average diameter by height stacking nanostructure with the distance of 0.4 nm between 2-3 graphene layers (XRD). The REELS results are consistent with those by the XRD indicating 8 (FL-GOc) and 4 layers (FL-RGOc). In graphene oxide and reduced graphene oxide prepared from the graphite the REELS indicates 8–11 and 7–10 layers. All graphene oxide samples show the C/O ratio of 2.1–2.3, 26.5–32.1 at% of C sp 3 bonds and high content of functional oxygen groups (hydroxyl—C-OH, epoxy—C-O-C, carbonyl—C=O, carboxyl—C-OOH, water) (XPS). Reduction increases the C/O ratio to 2.8–10.3, decreases C sp 3 content to 11.4–20.3 at% and also the content of C-O-C and C=O groups, accompanied by increasing content of C-OH and C-OOH groups. Formation of additional amount of water due to functional oxygen group reduction leads to layer delamination. Removing of functional oxygen groups

Improvement of oxidation resistance of copper by atomic layer deposition

Energy Technology Data Exchange (ETDEWEB)

Chang, M.L.; Cheng, T.C. [Department of Materials Science and Engineering, National Taiwan University, No. 1, Sec. 4, Roosevelt Road, Taipei 106, Taiwan (China); Lin, M.C. [Research Center for Biomedical Devices and Prototyping Production, Taipei Medical University, No. 250, Wu-Hsing Street, Taipei 110, Taiwan (China); Lin, H.C., E-mail: hclinntu@ntu.edu.tw [Department of Materials Science and Engineering, National Taiwan University, No. 1, Sec. 4, Roosevelt Road, Taipei 106, Taiwan (China); Chen, M.J., E-mail: mjchen@ntu.edu.tw [Department of Materials Science and Engineering, National Taiwan University, No. 1, Sec. 4, Roosevelt Road, Taipei 106, Taiwan (China)

2012-10-01

Graphical abstract: Results of glancing incident angle diffraction (GIXD) show the bare-Cu specimen was attacked by oxidation, whereas the coated-Cu specimens prevented from this problem. Highlights: Black-Right-Pointing-Pointer Deposition of Al{sub 2}O{sub 3} films on pure copper by an atomic layer deposition (ALD) technique. Black-Right-Pointing-Pointer Analysis of properties of the films coated at various substrate temperatures using the ALD technique. Black-Right-Pointing-Pointer Identification of the improvement of oxidation resistance of pure copper by the ALD-Al{sub 2}O{sub 3} films. Black-Right-Pointing-Pointer Assessment of the durability of the ALD-Al{sub 2}O{sub 3} films by adhesion strength. - Abstract: Al{sub 2}O{sub 3} films were deposited by the atomic layer deposition (ALD) technique onto pure copper at temperatures in the range 100-200 Degree-Sign C. The chemical composition, microstructure, and mechanic properties of the ALD-deposited Al{sub 2}O{sub 3} films were systematically analyzed. The variations in the film characteristics with substrate temperature were observed. Oxidation trials revealed that 20-nm-thick Al{sub 2}O{sub 3} films deposited at a substrate temperature as low as 100 Degree-Sign C suppress oxidative attack on pure copper. The Al{sub 2}O{sub 3} films also showed excellent durability of adhesion strength, according to predictions using the Coffin-Manson model based on the results of accelerated temperature cycling tests. These features indicate that ALD-deposited Al{sub 2}O{sub 3} film is a very promising candidate to be a protective coating for pure copper.

Synthesis of Zn–Fe layered double hydroxides via an oxidation process and structural analysis of products

Energy Technology Data Exchange (ETDEWEB)

Morimoto, Kazuya, E-mail: kazuya.morimoto@aist.go.jp [Institute for Geo-Resources and Environment, National Institute of Advanced Industrial Science and Technology (AIST), 1-1-1 Higashi, Tsukuba, Ibaraki 305-8567 (Japan); Tamura, Kenji [Environmental Remediation Materials Unit, National Institute for Materials Science (NIMS), 1-1 Namiki, Tsukuba, Ibaraki 305-0044 (Japan); Anraku, Sohtaro [Graduate School of Engineering, Hokkaido University, Kita 13 Nishi 8, Kita-ku, Sapporo 060-8628 (Japan); Sato, Tsutomu [Faculty of Engineering, Hokkaido University, Kita 13 Nishi 8, Kita-ku, Sapporo 060-8628 (Japan); Suzuki, Masaya [Institute for Geo-Resources and Environment, National Institute of Advanced Industrial Science and Technology (AIST), 1-1-1 Higashi, Tsukuba, Ibaraki 305-8567 (Japan); Yamada, Hirohisa [Environmental Remediation Materials Unit, National Institute for Materials Science (NIMS), 1-1 Namiki, Tsukuba, Ibaraki 305-0044 (Japan)

2015-08-15

The synthesis of Zn–Fe(III) layered double hydroxides was attempted, employing different pathways using either Fe(II) or Fe(III) species together with Zn as the initial reagents. The product derived from the synthesis employing Fe(II) was found to transition to a Zn–Fe(III) layered double hydroxides phase following oxidation process. In contrast, the product obtained with Fe(III) did not contain a layered double hydroxides phase, but rather consisted of simonkolleite and hydrous ferric oxide. It was determined that the valency of the Fe reagent used in the initial synthesis affected the generation of the layered double hydroxides phase. Fe(II) species have ionic radii and electronegativities similar to those of Zn, and therefore are more likely to form trioctahedral hydroxide layers with Zn species. - Graphical abstract: The synthesis of Zn–Fe(III) layered double hydroxides was attempted, employing different pathways using either Fe(II) or Fe(III) species together with Zn as the initial reagents. - Highlights: • Iron valency affected the generation of Zn–Fe layered double hydroxides. • Zn–Fe layered double hydroxides were successfully synthesized using Fe(II). • Fe(II) species were likely to form trioctahedral hydroxide layers with Zn species.

Stabilizing nanostructured solid oxide fuel cell cathode with atomic layer deposition.

Science.gov (United States)

Gong, Yunhui; Palacio, Diego; Song, Xueyan; Patel, Rajankumar L; Liang, Xinhua; Zhao, Xuan; Goodenough, John B; Huang, Kevin

2013-09-11

We demonstrate that the highly active but unstable nanostructured intermediate-temperature solid oxide fuel cell cathode, La0.6Sr0.4CoO3-δ (LSCo), can retain its high oxygen reduction reaction (ORR) activity with exceptional stability for 4000 h at 700 °C by overcoating its surfaces with a conformal layer of nanoscale ZrO2 films through atomic layer deposition (ALD). The benefits from the presence of the nanoscale ALD-ZrO2 overcoats are remarkable: a factor of 19 and 18 reduction in polarization area-specific resistance and degradation rate over the pristine sample, respectively. The unique multifunctionality of the ALD-derived nanoscaled ZrO2 overcoats, that is, possessing porosity for O2 access to LSCo, conducting both electrons and oxide-ions, confining thermal growth of LSCo nanoparticles, and suppressing surface Sr-segregation is deemed the key enabler for the observed stable and active nanostructured cathode.

Characterization of Li-rich layered oxides by using transmission electron microscope

Directory of Open Access Journals (Sweden)

Hu Zhao

2017-07-01

Full Text Available Lithium-rich layered oxides (LrLOs deliver extremely high specific capacities and are considered to be promising candidates for electric vehicle and smart grid applications. However, the application of LrLOs needs further understanding of the structural complexity and dynamic evolution of monoclinic and rhombohedral phases, in order to overcome the issues including voltage decay, poor rate capability, initial irreversible capacity loss and etc. The development of aberration correction for the transmission electron microscope and concurrent progress in electron spectroscopy, have fueled rapid progress in the understanding of the mechanism of such issues. New techniques based on the transmission electron microscope are first surveyed, and the applications of these techniques for the study of the structure, migration of transition metal, and the activation of oxygen of LrLOs are then explored in detail, with a particular focus on the mechanism of voltage decay. Keywords: Lithium-ion battery, Transmission electron microscope, Lithium-rich layered oxide, Cathode material

Ultrathin silicon dioxide layers with a low leakage current density formed by chemical oxidation of Si

Science.gov (United States)

Asuha,; Kobayashi, Takuya; Maida, Osamu; Inoue, Morio; Takahashi, Masao; Todokoro, Yoshihiro; Kobayashi, Hikaru

2002-10-01

Chemical oxidation of Si by use of azeotrope of nitric acid and water can form 1.4-nm-thick silicon dioxide layers with a leakage current density as low as those of thermally grown SiO2 layers. The capacitance-voltage (C-V) curves for these ultrathin chemical SiO2 layers have been measured due to the low leakage current density. The leakage current density is further decreased to approx1/5 (cf. 0.4 A/cm2 at the forward gate bias of 1 V) by post-metallization annealing at 200 degC in hydrogen. Photoelectron spectroscopy and C-V measurements show that this decrease results from (i) increase in the energy discontinuity at the Si/SiO2 interface, and (ii) elimination of Si/SiO2 interface states and SiO2 gap states.

Thermoelectric misfit-layered cobalt oxides with interlayers of hydroxide and peroxide species

International Nuclear Information System (INIS)

Chou, Ta-Lei; Lybeck, Jenni; Chan, Ting-Shan; Hsu, Ying-Ya; Tewari, Girish C.; Rautama, Eeva-Leena; Yamauchi, Hisao; Karppinen, Maarit

2013-01-01

Among the thermoelectric misfit-layered cobalt oxides, [M m A 2 O m+2 ] q CoO 2 , the parent m=0 phases exhibit divergent chemical features but are less understood than the more common m>0 members of the series. Here we synthesize Sr-for-Ca substituted [(Ca 1−x Sr x ) z (O,OH) 2 ] q CoO 2 zero phases up to x=0.2 through low-temperature hydrothermal conversion of precursor powders of the m=1 misfit system, [Co(Ca 1−x Sr x ) 2 O 3 ] q CoO 2 . In the zero-phase [(Ca 1−x Sr x ) z (O,OH) 2 ] q CoO 2 system, as the Sr content x increases the lattice expands anisotropically along the c axis such that the ab-plane dimension and the misfit parameter q remain essentially constant. X-ray absorption spectroscopy data suggest the presence of peroxide-type oxygen species in the (Ca 1−x Sr x ) z (O,OH) 2 rock-salt block and together with infrared spectroscopy, thermogravimetric and low-temperature resistivity and thermopower measurements evidence that the isovalent Sr-for-Ca substitution controls the balance between the peroxide and hydroxide species in the (Ca 1−x Sr x ) z (O,OH) 2 block but leaves the valence of Co essentially intact in the CoO 2 block. The higher electrical conductivity of the Sr-substituted phases is explained as a consequence of increased carrier mobility. - Graphical abstract: Among the thermoelectric misfit-layered cobalt oxides, [M m A 2 O m+2 ] q CoO 2 , the parent zero (m=0) phases exhibit divergent chemical features. For [(Ca 1−x Sr x ) z (O,OH) 2 ] q CoO 2 , X-ray absorption spectroscopy data suggest the presence of peroxide-type oxygen species in the (Ca 1−x Sr x ) z (O,OH) 2 rock-salt block and together with thermogravimetric and low-temperature transport-property measurements evidence that the isovalent Sr-for-Ca substitution controls the balance between the peroxide and hydroxide species in the (Ca 1−x Sr x ) z (O,OH) 2 block but leaves the valence of Co essentially intact in the CoO 2 block. - Highlights: • Parent m=0 [M m A 2 O

Oxidation of scandium thin films on tungsten surface

International Nuclear Information System (INIS)

Gorodetskij, D.A.; Martynyuk, A.V.

1988-01-01

Presence of Sc on the surface of W in amounts larger than a monolayer coverage leads to a decrease of the work function at the initial oxidation stage, which is attributed to oxygen implantation into the surface layer of the metal. A subsequent oxidation is followed by the formation on the surface of a thin oxide layer and an increase of the work function. An increase of the amount of Sc deposited on the surface before the oxidation decreases the work function of the obtained oxide from 5.8 (clean W surface) down to 3.3 eV (thick Sc layer on W)

Photochemical preparation of aluminium oxide layers via vacuum ultraviolet irradiation of a polymeric hexanoato aluminium complex

International Nuclear Information System (INIS)

Wennrich, L.; Khalil, H.; Bundesmann, C.; Decker, U.; Gerlach, J.W.; Helmstedt, U.; Manova, D.; Naumov, S.; Prager, L.

2013-01-01

By means of photochemical conversion of thin layers of a polymeric hexanoato aluminium complex as the precursor, thin aluminium oxide layers were prepared onto silicon wafers. The precursor compound was synthesized and characterized by several analytical techniques like NMR, FTIR, XPS, ICP, and found to be a polymeric aluminium-containing coordination compound which has been proposed to be a hydroxo-bridged aluminium chain with pendant hexanoyl side-chains ascertained as catena-poly[{di(κ-O,O-hexanoato)aluminium}(μ-hydroxo)] (PHAH). Thin layers deposited from a solution of PHAH in toluene onto silicon wafers were irradiated using VUV radiation from a xenon excimer lamp. The layers were characterized by XPS, XRD, XRR, and spectroscopic ellipsometry. VUV radiation with a radiant exposure of E = 36 J cm −2 led to almost carbon-free amorphous layers with a composition close to that of alumina having a density of about 2.1 g cm −3 . Thus, using the example of a polymeric aluminium complex, the potential of the photochemical conversion of metal complexes into oxides could be shown as an alternative method, in addition to sol–gel techniques, for the generation of thin plane metal-oxide layers at normal temperature and pressure. Highlights: ► A polymeric aluminium complex was synthesized and characterized by NMR, FTIR, XPS and ICP. ► Thin layers of the compound were irradiated using vacuum-UV radiation and converted to AlO x . ► Quantum-chemical calculations explain the conversion mechanism.

Ion beam-based characterization of multicomponent oxide thin films and thin film layered structures

International Nuclear Information System (INIS)

Krauss, A.R.; Rangaswamy, M.; Lin, Yuping; Gruen, D.M.; Schultz, J.A.; Schmidt, H.K.; Chang, R.P.H.

1992-01-01

Fabrication of thin film layered structures of multi-component materials such as high temperature superconductors, ferroelectric and electro-optic materials, and alloy semiconductors, and the development of hybrid materials requires understanding of film growth and interface properties. For High Temperature Superconductors, the superconducting coherence length is extremely short (5--15 Angstrom), and fabrication of reliable devices will require control of film properties at extremely sharp interfaces; it will be necessary to verify the integrity of thin layers and layered structure devices over thicknesses comparable to the atomic layer spacing. Analytical techniques which probe the first 1--2 atomic layers are therefore necessary for in-situ characterization of relevant thin film growth processes. However, most surface-analytical techniques are sensitive to a region within 10--40 Angstrom of the surface and are physically incompatible with thin film deposition and are typically restricted to ultra high vacuum conditions. A review of ion beam-based analytical methods for the characterization of thin film and multi-layered thin film structures incorporating layers of multicomponent oxides is presented. Particular attention will be paid to the use of time-of-flight techniques based on the use of 1- 15 key ion beams which show potential for use as nondestructive, real-time, in-situ surface diagnostics for the growth of multicomponent metal and metal oxide thin films

Towards printed perovskite solar cells with cuprous oxide hole transporting layers

DEFF Research Database (Denmark)

Wang, Yan; Xia, Zhonggao; Liang, Jun

2015-01-01

Solution-processed p-type metal oxide materials have shown great promise in improving the stability of perovskite-based solar cells and offering the feasibility for a low cost printing fabrication process. Herein, we performed a device modeling study on planar perovskite solar cells with cuprous...... oxide (Cu2O) hole transporting layers (HTLs) by using a solar cell simulation program, wxAMPS. The performance of a Cu2O/perovskite solar cell was correlated to the material properties of the Cu2O HTL, such as thickness, carrier mobility, mid-gap defect, and doping...

All-inorganic quantum-dot light-emitting-diodes with vertical nickel oxide nanosheets as hole transport layer

Directory of Open Access Journals (Sweden)

Jiahui Li

2016-10-01

Full Text Available All-inorganic quantum dot light emitting diodes (QLEDs have gained great attention as a result of their high stability under oxygen-rich, humid and high current working conditions. In this work, we have fabricated an all-inorganic QLED device (FTO/NiO/QDs/AZO/Ag with sandwich-structure, wherein the inorganic metal oxides thin films of NiO and AZO were employed as hole and electron transport layers, respectively. The porous NiO layer with vertical lamellar nanosheets interconnected microstructure have been directly synthesized on the substrate of conductive FTO glass and increased the wettability of CdSe@ZnS QDs, which result in an enhancement of current transport performance of the QLED.

A method for the densification of ceramic layers, especially ceramic layers within solid oxide cell (SOC) technology, and products obtained by the method

DEFF Research Database (Denmark)

2013-01-01

A ceramic layer, especially for use in solid oxide cell (SOC) technology, is densified in a method comprising (a) providing a multilayer system by depositing the porous ceramic layer, which is to be densified, onto the selected system of ceramic layers on a support, (b) pre-sintering the resulting......(s) in the porous layer surface and (e) performing a thermal treatment at a temperature T2, where T2 > ?1, to obtain densification of and grain growth in the porous layer formed in step (b). The method makes it possible to obtain dense ceramic layers at temperatures, which are compatible with the other materials...... present in a ceramic multilayer system....

Suppression of interfacial voids formation during silane (SiH4)-based silicon oxide bonding with a thin silicon nitride capping layer

Science.gov (United States)

Lee, Kwang Hong; Bao, Shuyu; Wang, Yue; Fitzgerald, Eugene A.; Seng Tan, Chuan

2018-01-01

The material properties and bonding behavior of silane-based silicon oxide layers deposited by plasma-enhanced chemical vapor deposition were investigated. Fourier transform infrared spectroscopy was employed to determine the chemical composition of the silicon oxide films. The incorporation of hydroxyl (-OH) groups and moisture absorption demonstrates a strong correlation with the storage duration for both as-deposited and annealed silicon oxide films. It is observed that moisture absorption is prevalent in the silane-based silicon oxide film due to its porous nature. The incorporation of -OH groups and moisture absorption in the silicon oxide films increase with the storage time (even in clean-room environments) for both as-deposited and annealed silicon oxide films. Due to silanol condensation and silicon oxidation reactions that take place at the bonding interface and in the bulk silicon, hydrogen (a byproduct of these reactions) is released and diffused towards the bonding interface. The trapped hydrogen forms voids over time. Additionally, the absorbed moisture could evaporate during the post-bond annealing of the bonded wafer pair. As a consequence, defects, such as voids, form at the bonding interface. To address the problem, a thin silicon nitride capping film was deposited on the silicon oxide layer before bonding to serve as a diffusion barrier to prevent moisture absorption and incorporation of -OH groups from the ambient. This process results in defect-free bonded wafers.

Mixed oxides obtained from Co and Mn containing layered double hydroxides: Preparation, characterization, and catalytic properties

International Nuclear Information System (INIS)

Kovanda, Frantisek; Rojka, Tomas; Dobesova, Jana; Machovic, Vladimir; Bezdicka, Petr; Obalova, Lucie; Jiratova, Kveta; Grygar, Tomas

2006-01-01

Co-Mn-Al layered double hydroxides (LDHs) with various Co:Mn:Al molar ratios (4:2:0, 4:1.5:0.5, 4:1:1, 4:0.5:1.5, and 4:0:2) were prepared and characterized. Magnesium containing LDHs Co-Mg-Mn (2:2:2), Co-Mg-Mn-Al (2:2:1:1), and Co-Mg-Al (2:2:2) were also studied. Thermal decomposition of prepared LDHs and formation of related mixed oxides were studied using high-temperature X-ray powder diffraction and thermal analysis. The thermal decomposition of Mg-free LDHs starts by their partial dehydration accompanied by shrinkage of the lattice parameter c from ca. 0.76 to 0.66 nm. The dehydration temperature of the Co-Mn-Al LDHs decreases with increasing Mn content from 180 deg. C in Co-Al sample to 120 deg. C in sample with Co:Mn:Al molar ratio of 4:1.5:0.5. A subsequent step is a complete decomposition of the layered structure to nanocrystalline spinel, the complete dehydration, and finally decarbonation of the mixed oxide phase. Spinel-type oxides were the primary crystallization products. Mg-containing primary spinels had practically empty tetrahedral cationic sites. A dramatic increase of the spinel cell size upon heating and analysis by Raman spectroscopy revealed a segregation of Co-rich spinel in Co-Mn and Co-Mn-Al specimens. In calcination products obtained at 500 deg. C, the spinel mean coherence length was 5-10 nm, and the total content of the X-ray diffraction crystalline portion was 50-90%. These calcination products were tested as catalysts in the total oxidation of ethanol and decomposition of N 2 O. The catalytic activity in ethanol combustion was enhanced by increasing (Co+Mn) content while an optimum content of reducible components was necessary for high activity in N 2 O decomposition, where the highest conversions were found for calcined Co-Mn-Al sample with Co:Mn:Al molar ratio of 4:1:1

Methane oxidation and methane fluxes in the ocean surface layer and deep anoxic waters

Science.gov (United States)

Ward, B. B.; Kilpatrick, K. A.; Novelli, P. C.; Scranton, M. I.

1987-01-01

Measured biological oxidation rates of methane in near-surface waters of the Cariaco Basin are compared with the diffusional fluxes computed from concentration gradients of methane in the surface layer. Methane fluxes and oxidation rates were investigated in surface waters, at the oxic/anoxic interface, and in deep anoxic waters. It is shown that the surface-waters oxidation of methane is a mechanism which modulates the flux of methane from marine waters to the atmosphere.

Growth of light-emitting SiGe heterostructures on strained silicon-on-insulator substrates with a thin oxide layer

Energy Technology Data Exchange (ETDEWEB)

Baidakova, N. A., E-mail: banatale@ipmras.ru [Russian Academy of Sciences, Institute for Physics of Microstructures (Russian Federation); Bobrov, A. I. [University of Nizhny Novgorod (Russian Federation); Drozdov, M. N.; Novikov, A. V. [Russian Academy of Sciences, Institute for Physics of Microstructures (Russian Federation); Pavlov, D. A. [University of Nizhny Novgorod (Russian Federation); Shaleev, M. V.; Yunin, P. A.; Yurasov, D. V.; Krasilnik, Z. F. [Russian Academy of Sciences, Institute for Physics of Microstructures (Russian Federation)

2015-08-15

The possibility of using substrates based on “strained silicon on insulator” structures with a thin (25 nm) buried oxide layer for the growth of light-emitting SiGe structures is studied. It is shown that, in contrast to “strained silicon on insulator” substrates with a thick (hundreds of nanometers) oxide layer, the temperature stability of substrates with a thin oxide is much lower. Methods for the chemical and thermal cleaning of the surface of such substrates, which make it possible to both retain the elastic stresses in the thin Si layer on the oxide and provide cleaning of the surface from contaminating impurities, are perfecte. It is demonstrated that it is possible to use the method of molecular-beam epitaxy to grow light-emitting SiGe structures of high crystalline quality on such substrates.

Adhesion-enhanced thick copper film deposition on aluminum oxide by an ion-beam-mixed Al seed layer

International Nuclear Information System (INIS)

Kim, Hyung-Jin; Park, Jae-Won

2012-01-01

We report a highly-adherent 30-μm Cu conductive-path coating on an aluminum-oxide layer anodized on an aluminum-alloy substrate for a metal-printed circuit-board application. A 50-nm Al layer was first coated with an e-beam evaporative deposition method on the anodized oxide, followed by ion bombardment to mix the interfacial region. Subsequently, a Cu coating was deposited onto the mixed seed layer to the designed thickness. Adhesions of the interface were tested by using tape adhesion test, and pull-off tests and showed commercially acceptable adhesions for such thick coating layers. The ion beam mixing (IBM) plays the role of fastening the thin seed coating layer to the substrate and enhancing the adhesion of the Cu conductive path on the anodized aluminum surface.

Alkali-resistant low-temperature atomic-layer-deposited oxides for optical fiber sensor overlays

Science.gov (United States)

Kosiel, K.; Dominik, M.; Ściślewska, I.; Kalisz, M.; Guziewicz, M.; Gołaszewska, K.; Niedziółka-Jonsson, J.; Bock, W. J.; Śmietana, M.

2018-04-01

This paper presents an investigation of properties of selected metallic oxides deposited at a low temperature (100 °C) by atomic layer deposition (ALD) technique, relating to their applicability as thin overlays for optical fiber sensors resistant in alkaline environments. Hafnium oxide (Hf x O y with y/x approx. 2.70), tantalum oxide (Ta x O y with y/x approx. 2.75) and zirconium oxide (Zr x O y with y/x approx. 2.07), which deposition was based, respectively, on tetrakis(ethylmethyl)hafnium, tantalum pentachloride and tetrakis(ethylmethyl)zirconium with deionized water, were tested as thin layers on planar Si (100) and glass substrates. Growth per cycle (GPC) in the ALD processes was 0.133-0.150 nm/cycle. Run-to-run GPC reproducibility of the ALD processes was best for Hf x O y (0.145 ± 0.001 nm/cycle) and the poorest for Ta x O y (0.133 ± 0.003 nm/cycle). Refractive indices n of the layers were 2.00-2.10 (at the wavelength λ = 632 nm), with negligible k value (at λ for 240-930 nm). The oxides examined by x-ray diffractometry proved to be amorphous, with only small addition of crystalline phases for the Zr x O y . The surfaces of the oxides had grainy but smooth topographies with root-mean square roughness ˜0.5 nm (at 10 × 10 μm2 area) according to atomic force microscopy. Ellipsometric measurements, by contrast, suggest rougher surfaces for the Zr x O y layers. The surfaces were also slightly rougher on the glass-based samples than on the Si-based ones. Nanohardness and Young modules were 4.90-8.64 GPa and 83.7-104.4 GPa, respectively. The tests of scratch resistance revealed better tribological properties for the Hf x O y and the Ta x O y than for the Zr x O y . The surfaces were hydrophilic, with wetting angles of 52.5°-62.9°. The planar oxides on Si, being resistive even to concentrated alkali (pH 14), proved to be significantly more alkali-resistive than Al2O3. The Ta x O y overlay was deposited on long-period grating sensor induced in optical

Iridium/Iridium Silicide as an Oxidation Resistant Capping Layer for Soft X-ray Mirrors

International Nuclear Information System (INIS)

Prisbrey, S; Vernon, S

2004-01-01

Rust on a sword, tarnish on the silverware, and a loss in reflectivity for soft x-ray mirrors are all caused by oxidation that changes the desired characteristics of a material. Methods to prevent the oxidation have varied over the centuries with the default method of a protective coating being the most common. The protective coating for x-ray mirrors is usually a self-limiting oxidized layer on the surface of the material that stops further oxidation of the material by limiting the diffusion of oxygen to the material underneath

Partial oxidation of methane over Ni/Mg/Al/La mixed oxides prepared from layered double hydrotalcites

Energy Technology Data Exchange (ETDEWEB)

Zhang, Jun [Low Carbon Energy Conversion Center, Shanghai Advanced Research Institute, Chinese Academy of Sciences, Shanghai 201203 (China); State Key Laboratory of Coal Conversion, Institute of Coal Chemistry, Chinese Academy of Sciences, Taiyuan 030001, Shanxi (China); Graduate University of Chinese Academy of Sciences, Beijing 100049 (China); Zhao, Ning; Wei, Wei [State Key Laboratory of Coal Conversion, Institute of Coal Chemistry, Chinese Academy of Sciences, Taiyuan 030001, Shanxi (China); Sun, Yuhan [Low Carbon Energy Conversion Center, Shanghai Advanced Research Institute, Chinese Academy of Sciences, Shanghai 201203 (China); State Key Laboratory of Coal Conversion, Institute of Coal Chemistry, Chinese Academy of Sciences, Taiyuan 030001, Shanxi (China)

2010-11-15

A series of Ni/Mg/Al/La mixed oxides prepared by thermal decomposition of layered double hydrotalcites (HT) were characterized by XRD, ICP, EXAFS, TGA, TPR-H{sub 2}, SEM, and N{sub 2} adsorption/desorption technique. The results revealed the formation of periclase-type catalysts with mesoporous structure, and the addition of La{sup 3+} lowered the phase crystallization with the formation of small oxide particles. Such catalysts had both high activities and stabilities toward partial oxidation of methane (POM). The catalyst containing 6.5 mol.% La{sup 3+} showed the highest performance at 1053 K with CH{sub 4} conversion of 99%, CO selectivity of 93% and H{sub 2} selectivity of 96%, which could be attributed to the presence of highly dispersed nickel and then the resistance to coke formation due to the promotion effect of lanthanum. (author)

Synthesizing new types of ultrathin 2D metal oxide nanosheets via half-successive ion layer adsorption and reaction

Science.gov (United States)

Gao, Linjie; Li, Yaguang; Xiao, Mu; Wang, Shufang; Fu, Guangsheng; Wang, Lianzhou

2017-06-01

Two-dimensional (2D) metal oxide nanosheets have demonstrated their great potential in a broad range of applications. The existing synthesis strategies are mainly preparing 2D nanosheets from layered and specific transition metal oxides. How to prepare the other types of metal oxides as ultrathin 2D nanosheets remains unsolved, especially for metal oxides containing alkali, alkaline earth metal, and multiple metal elements. Herein, we developed a half-successive ion layer adsorption and reaction (SILAR) method, which could synthesize those types of metal oxides as ultrathin 2D nanosheets. The synthesized 2D metal oxides nanosheets are within 1 nm level thickness and 500 m2 · g-1 level surface area. This method allows us to develop many new types of ultrathin 2D metal oxides nanosheets that have never been prepared before.

Role of the SiO2 buffer layer thickness in the formation of Si/SiO2/nc-Ge/SiO2 structures by dry oxidation

International Nuclear Information System (INIS)

Kling, A.; Ortiz, M.I.; Prieto, A.C.; Rodriguez, A.; Rodriguez, T.; Jimenez, J.; Ballesteros, C.; Soares, J.C.

2006-01-01

Nanomemories, containing Ge-nanoparticles in a SiO 2 matrix, can be produced by dry thermal oxidation of a SiGe layer deposited onto a Si-wafer with a barrier SiO 2 layer on its top. Rutherford backscattering spectrometry has been used to characterize the kinetics of the oxidation process, the composition profile of the growing oxide, the Ge-segregation and its diffusion into the barrier oxide in samples with thin and thick barrier oxide layers. The Ge segregated during the oxidation of the SiGe layer diffuses into the barrier oxide. In the first case the diffusion through the thin oxide is enhanced by the proximity of the substrate that acts as a sink for the Ge, resulting in the formation of a low Ge concentration SiGe layer in the surface of the Si-wafer. In the second case, the Ge-diffusion progresses as slowly as in bulk SiO 2 . Since barrier oxide layers as thin as possible are favoured for device fabrication, the structures should be oxidized at lower temperatures and the initial SiGe layer thickness reduced to minimize the Ge-diffusion

Increased electrochemical properties of ruthenium oxide and graphene/ruthenium oxide hybrid dispersed by polyvinylpyrrolidone

International Nuclear Information System (INIS)

Chen, Yao; Zhang, Xiong; Zhang, Dacheng; Ma, Yanwei

2012-01-01

Highlights: ► A good dispersion of RuO 2 and graphene/RuO 2 is obtained by polyvinylpyrrolidone. ► PVP as a dispersant also can prevent the formation of metal Ru in graphene/RuO 2 . ► The max capacitances of the hybrid and RuO 2 reach 435 and 597 F g −1 at 0.2 A g −1 . ► The hybrid shows the best rate capability of 39% at 50 A g −1 . - Abstract: Ruthenium oxide has been prepared by a sol–gel method. Polyvinylpyrrolidone (PVP) as an excellent polymeric dispersant is adopted to prevent aggregation of ruthenium oxide. In order to enhance the rate capability of ruthenium oxide, graphene with residual oxygen functional groups as a 2D support has been merged into ruthenium oxide. These oxygen functional groups not only favor to form stable few layers of graphene colloids, but also offer the sites to anchor ruthenium oxide nanoparticles. X-ray diffraction infers that PVP can also hinder the partial formation of Ru by blocking the direct contact between the Ru 3+ and the graphene in the sol–gel synthesis of the hybrids. The ruthenium oxide and the graphene/ruthenium oxide hybrids dispersed by PVP have superior electrochemical properties due to good dispersing and protecting ability of PVP. Especially, the hybrids using PVP exhibit the best rate capability, indicating that the composites possess an advanced structure of combining sheets and particles in nano-scale.

Carbon-layer-protected cuprous oxide nanowire arrays for efficient water reduction

KAUST Repository

Zhang, Zhonghai

2013-02-26

In this work, we propose a solution-based carbon precursor coating and subsequent carbonization strategy to form a thin protective carbon layer on unstable semiconductor nanostructures as a solution to the commonly occurring photocorrosion problem of many semiconductors. A proof-of-concept is provided by using glucose as the carbon precursor to form a protective carbon coating onto cuprous oxide (Cu2O) nanowire arrays which were synthesized from copper mesh. The carbon-layer-protected Cu2O nanowire arrays exhibited remarkably improved photostability as well as considerably enhanced photocurrent density. The Cu2O nanowire arrays coated with a carbon layer of 20 nm thickness were found to give an optimal water splitting performance, producing a photocurrent density of -3.95 mA cm-2 and an optimal photocathode efficiency of 0.56% under illumination of AM 1.5G (100 mW cm-2). This is the highest value ever reported for a Cu 2O-based electrode coated with a metal/co-catalyst-free protective layer. The photostability, measured as the percentage of the photocurrent density at the end of 20 min measurement period relative to that at the beginning of the measurement, improved from 12.6% on the bare, nonprotected Cu2O nanowire arrays to 80.7% on the continuous carbon coating protected ones, more than a 6-fold increase. We believe that the facile strategy presented in this work is a general approach that can address the stability issue of many nonstable photoelectrodes and thus has the potential to make a meaningful contribution in the general field of energy conversion. © 2013 American Chemical Society.

HREM investigation of the constitution and the crystallography of thin thermal oxide layers on iron

DEFF Research Database (Denmark)

Graat, P.C.J.; Brongers, M.P.H.; Zandbergen, H.W.

1997-01-01

Oxide layers formed at 573 K in O2 at atmospheric pressure, both on a clean iron surface and on an iron surface covered with an etching induced (hydro)oxide film, were investigated with high-resolution transmission electron microscopy (HREM). Cross-sections of oxidised samples were prepared by a ...

Effect of nitrogen doping on wetting and photoactive properties of laser processed zinc oxide-graphene oxide nanocomposite layers

Energy Technology Data Exchange (ETDEWEB)

György, E., E-mail: egyorgy@icmab.es [Consejo Superior de Investigaciones Cientificas, Instituto de Ciencia de Materiales de Barcelona (CSIC-ICMAB), Campus UAB, 08193 Bellaterra (Spain); National Institute for Lasers, Plasma and Radiation Physics, P. O. Box MG 36, 76900 Bucharest V (Romania); Pérez del Pino, A. [Consejo Superior de Investigaciones Cientificas, Instituto de Ciencia de Materiales de Barcelona (CSIC-ICMAB), Campus UAB, 08193 Bellaterra (Spain); Logofatu, C. [National Institute for Materials Physics, P. O. Box MG. 7, 77125 Bucharest (Romania); Duta, A.; Isac, L. [Transilvania University of Brasov, Research Centre for Renewable Energy Systems and Recycling, Eroilor 29, 500036, Brasov (Romania)

2014-07-14

Zinc oxide-graphene oxide nanocomposite layers were submitted to laser irradiation in air or controlled nitrogen atmosphere using a frequency quadrupled Nd:YAG (λ = 266 nm, τ{sub FWHM} ≅ 3 ns, ν = 10 Hz) laser source. The experiments were performed in air at atmospheric pressure or in nitrogen at a pressure of 2 × 10{sup 4} Pa. The effect of the irradiation conditions, incident laser fluence value, and number of subsequent laser pulses on the surface morphology of the composite material was systematically investigated. The obtained results reveal that nitrogen incorporation improves significantly the wetting and photoactive properties of the laser processed layers. The kinetics of water contact angle variation when the samples are submitted to laser irradiation in nitrogen are faster than that of the samples irradiated in air, the surfaces becoming super-hydrophilic under UV light irradiation.

Preparation of Layered-Spinel Microsphere/Reduced Graphene Oxide Cathode Materials for Ultrafast Charge-Discharge Lithium-Ion Batteries.

Science.gov (United States)

Luo, Dong; Fang, Shaohua; Yang, Li; Hirano, Shin-Ichi

2017-12-22

Although Li-rich layered oxides (LLOs) have the highest capacity of any cathodes used, the rate capability of LLOs falls short of meeting the requirements of electric vehicles and smart grids. Herein, a layered-spinel microsphere/reduced graphene oxide heterostructured cathode (LS@rGO) is prepared in situ. This cathode is composed of a spinel phase, two layered structures, and a small amount of reduced graphene oxide (1.08 wt % of carbon). The assembly delivers a considerable charge capacity (145 mA h g -1 ) at an ultrahigh charge- discharge rate of 60 C (12 A g -1 ). The rate capability of LS@rGO is influenced by the introduced spinel phase and rGO. X-ray absorption and X-ray photoelectron spectroscopy data indicate that Cr ions move from octahedral lattice sites to tetrahedral lattice sites, and that Mn ions do not participate in the oxidation reaction during the initial charge process. © 2017 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

Influences of Indium Tin Oxide Layer on the Properties of RF Magnetron-Sputtered (BaSr)TiO3 Thin Films on Indium Tin Oxide-Coated Glass Substrate

Science.gov (United States)

Kim, Tae Song; Oh, Myung Hwan; Kim, Chong Hee

1993-06-01

Nearly stoichiometric ((Ba+Sr)/Ti=1.08-1.09) and optically transparent (BaSr)TiO3 thin films were deposited on an indium tin oxide (ITO)-coated glass substrate by means of rf magnetron sputtering for their application to the insulating layer of an electroluminescent flat panel display. The influence of the ITO layer on the properties of (BaSr)TiO3 thin films deposited on the ITO-coated substrate was investigated. The ITO layer did not affect the crystallographic orientation of (BaSr)TiO3 thin film, but enhanced the grain growth. Another effect of the ITO layer on (BaSr)TiO3 thin films was the interdiffusion phenomenon, which was studied by means of secondary ion mass spectrometry (SIMS). As the substrate temperature increased, interdiffusion intensified at the interface not only between the grown film and ITO layer but also between the ITO layer and base glass substrate. The refractive index (nf) of (BaSr)TiO3 thin film deposited on a bare glass substrate was 2.138-2.286, as a function of substrate temperature.

Method of making dielectric capacitors with increased dielectric breakdown strength

Science.gov (United States)

Ma, Beihai; Balachandran, Uthamalingam; Liu, Shanshan

2017-05-09

The invention is directed to a process for making a dielectric ceramic film capacitor and the ceramic dielectric laminated capacitor formed therefrom, the dielectric ceramic film capacitors having increased dielectric breakdown strength. The invention increases breakdown strength by embedding a conductive oxide layer between electrode layers within the dielectric layer of the capacitors. The conductive oxide layer redistributes and dissipates charge, thus mitigating charge concentration and micro fractures formed within the dielectric by electric fields.

Plasma electrolytic oxidation of Titanium Aluminides

International Nuclear Information System (INIS)

Morgenstern, R; Sieber, M; Lampke, T; Grund, T; Wielage, B

2016-01-01

Due to their outstanding specific mechanical and high-temperature properties, titanium aluminides exhibit a high potential for lightweight components exposed to high temperatures. However, their application is limited through their low wear resistance and the increasing high-temperature oxidation starting from about 750 °C. By the use of oxide ceramic coatings, these constraints can be set aside and the possible applications of titanium aluminides can be extended. The plasma electrolytic oxidation (PEO) represents a process for the generation of oxide ceramic conversion coatings with high thickness. The current work aims at the clarification of different electrolyte components’ influences on the oxide layer evolution on alloy TNM-B1 (Ti43.5Al4Nb1Mo0.1B) and the creation of compact and wear resistant coatings. Model experiments were applied using a ramp-wise increase of the anodic potential in order to show the influence of electrolyte components on the discharge initiation and the early stage of the oxide layer growth. The production of PEO layers with technically relevant thicknesses close to 100 μm was conducted in alkaline electrolytes with varying amounts of Na 2 SiO 3 ·5H 2 O and K 4 P 2 O 7 under symmetrically pulsed current conditions. Coating properties were evaluated with regard to morphology, chemical composition, hardness and wear resistance. The addition of phosphates and silicates leads to an increasing substrate passivation and the growth of compact oxide layers with higher thicknesses. Optimal electrolyte compositions for maximum coating hardness and thickness were identified by statistical analysis. Under these conditions, a homogeneous inner layer with low porosity can be achieved. The frictional wear behavior of the compact coating layer is superior to a hard anodized layer on aluminum. (paper)

Charge transport along luminescent oxide layers containing Si and SiC nanoparticles

Energy Technology Data Exchange (ETDEWEB)

Jambois, O. [EME, Departament d' Electronica, Universitat de Barcelona, Marti i Franques 1, 08028 Barcelona (Spain)]. E-mail: ojambois@el.ub.es; Vila, A. [EME, Departament d' Electronica, Universitat de Barcelona, Marti i Franques 1, 08028 Barcelona (Spain); Pellegrino, P. [EME, Departament d' Electronica, Universitat de Barcelona, Marti i Franques 1, 08028 Barcelona (Spain); Carreras, J. [EME, Departament d' Electronica, Universitat de Barcelona, Marti i Franques 1, 08028 Barcelona (Spain); Perez-Rodriguez, A. [EME, Departament d' Electronica, Universitat de Barcelona, Marti i Franques 1, 08028 Barcelona (Spain); Garrido, B. [EME, Departament d' Electronica, Universitat de Barcelona, Marti i Franques 1, 08028 Barcelona (Spain); Bonafos, C. [Nanomaterials Group, CEMES-CNRS, 29 rue J. Marvig 31055, Toulouse (France); BenAssayag, G. [Nanomaterials Group, CEMES-CNRS, 29 rue J. Marvig 31055, Toulouse (France)

2006-12-15

The electrical conductivity of silicon oxides containing silicon and silicon-carbon nanoparticles has been investigated. By use of sequential Si{sup +} and C{sup +} ion implantations in silicon oxide followed by an annealing at 1100 deg. C, luminescent Si nanocrystals and SiC nanoparticles were precipitated. The characterization of the electrical transport has been carried out on two kinds of structures, allowing parallel or perpendicular transport, with respect to the substrate. The first type of samples were elaborated by means of a focus-ion-beam technique: electrical contacts to embedded nanoparticles were made by milling two nanotrenches on the sample surface until reaching the buried layer, then filling them with tungsten. The distance between the electrodes is about 100 nm. The second type of samples correspond to 40 nm thick typical MOS capacitors. The electron transport along the buried layer has shown a dramatic lowering of the electrical current, up to five orders of magnitude, when applying a sequence of voltages. It has been related to a progressive charge retention inside the nanoparticles, which, on its turn, suppresses the electrical conduction along the layer. On the other hand, the MOS capacitors show a reversible carrier charge and discharge effect that limits the current at low voltage, mostly due to the presence of C in the layers. A typical Fowler-Nordheim injection takes place at higher applied voltages, with a threshold voltage equal to 23 V.

Improvement of in-plane alignment for surface oxidized NiO layer on textured Ni substrate by two-step heat-treatment

International Nuclear Information System (INIS)

Hasegawa, Katsuya; Izumi, Toru; Izumi, Teruo; Shiohara, Yuh; Maeda, Toshihiko

2004-01-01

Epitaxial growth of NiO on a textured Ni substrate as a template for an REBa 2 Cu 3 O y coated conductor was investigated. Highly in-plane aligned NiO layers were successfully fabricated using a new process of a two-step heat-treatment for oxidation. In the first-step, a highly in-plane aligned thin NiO layer was formed on a textured Ni substrate under a low driving force of oxidation. Then, in the second-step, a thick NiO layer was grown at a higher rate with maintaining its high in-plane grain alignment, as if the first NiO layer acts as a seed crystal layer. Further, growth rates and microstructures of the NiO layers were studied comparatively in the cases with and without the first layer. It was found that the oxidation rate in the case with the first layer was lower than that without the first layer. The microstructure observation revealed that the NiO without the first layer was poly-crystalline with many grain-boundaries. On the other hand, in the case with the first layer, grain-boundaries of the NiO were hardly observed. Hence, the reason for this difference of the growth rate and the microstructure of the NiO layers were discussed in view of a diffusivity path

Sub-second photonic processing of solution-deposited single layer and heterojunction metal oxide thin-film transistors using a high-power xenon flash lamp

KAUST Repository

Tetzner, Kornelius

2017-11-01

We report the fabrication of solution-processed In2O3 and In2O3/ZnO heterojunction thin-film transistors (TFTs) where the precursor materials were converted to their semiconducting state using high power light pulses generated by a xenon flash lamp. In2O3 TFTs prepared on glass substrates exhibited low-voltage operation (≤2 V) and a high electron mobility of ∼6 cm2 V−1 s−1. By replacing the In2O3 layer with a photonically processed In2O3/ZnO heterojunction, we were able to increase the electron mobility to 36 cm2 V−1 s−1, while maintaining the low-voltage operation. Although the level of performance achieved in these devices is comparable to control TFTs fabricated via thermal annealing at 250 °C for 1 h, the photonic treatment approach adopted here is extremely rapid with a processing time of less than 18 s per layer. With the aid of a numerical model we were able to analyse the temperature profile within the metal oxide layer(s) upon flashing revealing a remarkable increase of the layer\\'s surface temperature to ∼1000 °C within ∼1 ms. Despite this, the backside of the glass substrate remains unchanged and close to room temperature. Our results highlight the applicability of the method for the facile manufacturing of high performance metal oxide transistors on inexpensive large-area substrates.

Multiphase layered oxide growth on pure metals. I. General formulation

International Nuclear Information System (INIS)

Fromhold, A.T. Jr.

1982-01-01

A general formulation for the simultaneous growth of any number of layered planar oxide phases on a pure metal under diffusion-controlled conditions has been developed. Four individual situations have been developed in detail, namely, situations in which the predominant mode of ion transport is by cation interstitials, cation vacancies, anion interstitials, or anion vacancies. The generalized formulation enables the determination of quasi-steady-state growth kinetics following step function changes in the experimental conditions such as ambient oxygen pressure or temperature. Numerical evaluation of the coupled growth equations for the individual phases is required to deduce the general predictions of the theory. In the limit of two-layer growth by cation interstitial diffusion, the present formulation reproduces the earlier results of Fromhold and Sato

Covalent modification and exfoliation of graphene oxide using ferrocene

Science.gov (United States)

Avinash, M. B.; Subrahmanyam, K. S.; Sundarayya, Y.; Govindaraju, T.

2010-09-01

Large scale preparation of single-layer graphene and graphene oxide is of great importance due to their potential applications. We report a simple room temperature method for the exfoliation of graphene oxide using covalent modification of graphene oxide with ferrocene to obtain single-layer graphene oxide sheets. The samples were characterized by FESEM, HRTEM, AFM, EDAX, FT-IR, Raman and Mössbauer spectroscopic studies. HRTEM micrograph of the covalently modified graphene oxide showed increased interlayer spacing of ~2.4 nm due to ferrocene intercalation. The presence of single-layer graphene oxide sheets were confirmed by AFM studies. The covalently modified ferrocene-graphene oxide composite showed interesting magnetic behavior.Large scale preparation of single-layer graphene and graphene oxide is of great importance due to their potential applications. We report a simple room temperature method for the exfoliation of graphene oxide using covalent modification of graphene oxide with ferrocene to obtain single-layer graphene oxide sheets. The samples were characterized by FESEM, HRTEM, AFM, EDAX, FT-IR, Raman and Mössbauer spectroscopic studies. HRTEM micrograph of the covalently modified graphene oxide showed increased interlayer spacing of ~2.4 nm due to ferrocene intercalation. The presence of single-layer graphene oxide sheets were confirmed by AFM studies. The covalently modified ferrocene-graphene oxide composite showed interesting magnetic behavior. Electronic supplementary information (ESI) available: Magnetic data; AFM images; TEM micrographs; and Mössbauer spectroscopic data. See DOI: 10.1039/c0nr00024h

Passivation mechanism in silicon heterojunction solar cells with intrinsic hydrogenated amorphous silicon oxide layers

Science.gov (United States)

Deligiannis, Dimitrios; van Vliet, Jeroen; Vasudevan, Ravi; van Swaaij, René A. C. M. M.; Zeman, Miro

2017-02-01

In this work, we use intrinsic hydrogenated amorphous silicon oxide layers (a-SiOx:H) with varying oxygen content (cO) but similar hydrogen content to passivate the crystalline silicon wafers. Using our deposition conditions, we obtain an effective lifetime (τeff) above 5 ms for cO ≤ 6 at. % for passivation layers with a thickness of 36 ± 2 nm. We subsequently reduce the thickness of the layers using an accurate wet etching method to ˜7 nm and deposit p- and n-type doped layers fabricating a device structure. After the deposition of the doped layers, τeff appears to be predominantly determined by the doped layers themselves and is less dependent on the cO of the a-SiOx:H layers. The results suggest that τeff is determined by the field-effect rather than by chemical passivation.

Review of recent progresses on flexible oxide semiconductor thin film transistors based on atomic layer deposition processes

Science.gov (United States)

Sheng, Jiazhen; Han, Ki-Lim; Hong, TaeHyun; Choi, Wan-Ho; Park, Jin-Seong

2018-01-01

The current article is a review of recent progress and major trends in the field of flexible oxide thin film transistors (TFTs), fabricating with atomic layer deposition (ALD) processes. The ALD process offers accurate controlling of film thickness and composition as well as ability of achieving excellent uniformity over large areas at relatively low temperatures. First, an introduction is provided on what is the definition of ALD, the difference among other vacuum deposition techniques, and the brief key factors of ALD on flexible devices. Second, considering functional layers in flexible oxide TFT, the ALD process on polymer substrates may improve device performances such as mobility and stability, adopting as buffer layers over the polymer substrate, gate insulators, and active layers. Third, this review consists of the evaluation methods of flexible oxide TFTs under various mechanical stress conditions. The bending radius and repetition cycles are mostly considering for conventional flexible devices. It summarizes how the device has been degraded/changed under various stress types (directions). The last part of this review suggests a potential of each ALD film, including the releasing stress, the optimization of TFT structure, and the enhancement of device performance. Thus, the functional ALD layers in flexible oxide TFTs offer great possibilities regarding anti-mechanical stress films, along with flexible display and information storage application fields. Project supported by the National Research Foundation of Korea (NRF) (No. NRF-2017R1D1A1B03034035), the Ministry of Trade, Industry & Energy (No. #10051403), and the Korea Semiconductor Research Consortium.

Structural Properties of Zinc Oxide Nanorods Grown on Al-Doped Zinc Oxide Seed Layer and Their Applications in Dye-Sensitized Solar Cells

Directory of Open Access Journals (Sweden)

Kyung Ho Kim

2014-03-01

Full Text Available We fabricated zinc oxide (ZnO nanorods (NRs with Al-doped ZnO (AZO seed layers and dye-sensitized solar cells (DSSCs employed the ZnO NRs between a TiO2 photoelectrode and a fluorine-doped SnO2 (FTO electrode. The growth rate of the NRs was strongly dependent on the seed layer conditions, i.e., thickness, Al dopant and annealing temperature. Attaining a large particle size with a high crystallinity of the seed layer was vital to the well-aligned growth of the NRs. However, the growth was less related to the substrate material (glass and FTO coated glass. With optimized ZnO NRs, the DSSCs exhibited remarkably enhanced photovoltaic performance, because of the increase of dye absorption and fast carrier transfer, which, in turn, led to improved efficiency. The cell with the ZnO NRs grown on an AZO seed layer annealed at 350 °C showed a short-circuit current density (JSC of 12.56 mA/cm2, an open-circuit voltage (VOC of 0.70 V, a fill factor (FF of 0.59 and a power conversion efficiency (PCE, η of 5.20% under air mass 1.5 global (AM 1.5G illumination of 100 mW/cm2.

Homogeneous double-layer amorphous Si-doped indium oxide thin-film transistors for control of turn-on voltage

International Nuclear Information System (INIS)

Kizu, Takio; Tsukagoshi, Kazuhito; Aikawa, Shinya; Nabatame, Toshihide; Fujiwara, Akihiko; Ito, Kazuhiro; Takahashi, Makoto

2016-01-01

We fabricated homogeneous double-layer amorphous Si-doped indium oxide (ISO) thin-film transistors (TFTs) with an insulating ISO cap layer on top of a semiconducting ISO bottom channel layer. The homogeneously stacked ISO TFT exhibited high mobility (19.6 cm"2/V s) and normally-off characteristics after annealing in air. It exhibited normally-off characteristics because the ISO insulator suppressed oxygen desorption, which suppressed the formation of oxygen vacancies (V_O) in the semiconducting ISO. Furthermore, we investigated the recovery of the double-layer ISO TFT, after a large negative shift in turn-on voltage caused by hydrogen annealing, by treating it with annealing in ozone. The recovery in turn-on voltage indicates that the dense V_O in the semiconducting ISO can be partially filled through the insulator ISO. Controlling molecule penetration in the homogeneous double layer is useful for adjusting the properties of TFTs in advanced oxide electronics.

Preparation and characterization of self-assembled layer by layer NiCo2O4–reduced graphene oxide nanocomposite with improved electrocatalytic properties

International Nuclear Information System (INIS)

Srivastava, Manish; Elias Uddin, Md.; Singh, Jay; Kim, Nam Hoon; Lee, Joong Hee

2014-01-01

Graphical abstract: NiCo 2 O 4 were grown on RGO by in situ synthesis process. FE-SEM investigation revealed self assembled layer by layer growth of NiCo 2 O 4 –RGO nanocomposite. NiCo 2 O 4 –RGO nanocomposite exhibited synergetic effect of NiCo 2 O 4 nanoparticles and RGO on its electrochemical performance. -- Highlights: • NiCo 2 O 4 were grown on RGO by in-situ synthesis process. • FE-SEM image revealed self-assembled layer by layer growth of NiCo 2 O 4 -RGO nanocomposite. • NiCo 2 O 4 -RGO nanocomposite exhibited synergetic effects on its electrochemical performance. -- Abstract: NiCo 2 O 4 nanoparticles dispersed on reduced graphene oxide (RGO) are prepared by simultaneously reducing graphene oxide (GO), nickel and cobalt nitrate via a hydrothermal method assisted by post annealing at low temperature. The method involves formation of hydroxides on GO using ammonia under hydrothermal conditions. Subsequent thermal treatment at 300 °C led to the conversion of hydroxides into single-phase NiCo 2 O 4 atop the RGO. The synthesized products are characterized through several techniques including X-ray diffraction (XRD), ultraviolet–visible spectroscopy (UV–Vis), Fourier transform infrared spectroscopy (FT-IR), Raman spectroscopy (RS), field emission scanning electron microscopy (FE-SEM), transmission electron microscopy (TEM) and X-ray photoelectron spectroscopy (XPS). The FE-SEM investigations reveal the growth of a layer by layer assembly of NiCo 2 O 4 –RGO (2:1) nanocomposite, where the NiCo 2 O 4 nanoparticles are tightly packed between the layers of RGO. Further, the catalytic properties of the NiCo 2 O 4 –RGO nanocomposite are investigated for the oxygen evolution reaction (OER) through cyclic voltammetry (CV) measurements. It is observed that the special structural features of the NiCo 2 O 4 –RGO (2:1) nanocomposite, including layer by layer assembly, integrity and excellent dispersion of the NiCo 2 O 4 nanoparticles atop the RGO, produced

Emissivity model of steel 430 during the growth of oxide layer at 800-1100 K and 1.5 μm

Science.gov (United States)

Xing, Wei; Shi, Deheng; Sun, Jinfeng; Zhu, Zunlue

2018-01-01

This work studied the variation in spectral emissivity with growth of oxide layer at the different temperatures. For this reason, we measured the normal spectral emissivity during the growth of oxide layer on the sample surface at a wavelength of 1.5 μm over a temperature range 800-1100 K. In the experiment, the temperature was measured by the two thermocouples, which were symmetrically welded onto the front surface of specimens. The average of their readings was regarded as the true temperature. The detector should be perpendicular to the specimen surface as accurately as possible. The variation in spectral emissivity with growth of oxide layer was evaluated at a certain temperature. Altogether 11 emissivity models were evaluated. The conclusion was gained that the more the number of parameters used in the models was, the better the fitting accuracy became. On the whole, all the PEE models, the four-parameter LEE model and the five-parameter PFE, PLE and LEE models could be employed to well fit this kind of variation. The variation in spectral emissivity with temperature was determined at a certain thickness of oxide film. Almost all the models studied in this paper could be used to accurately evaluate this variation. The approximate models of spectral emissivity as a function of temperature and oxide-layer thickness were proposed. The strong oscillations of spectral emissivity were observed, which were affirmed to arise from the interference effect between the two radiations stemming from the oxide layer and from the substrate. The uncertainties in the temperature of steel 430 generated only by the surface oxidization were approximately 4.1-10.7 K in this experiment.

Characterization of oxide layers on amorphous Mg-based alloys by Auger electron spectroscopy with sputter depth profiling

Energy Technology Data Exchange (ETDEWEB)

Baunack, S.; Wolff, U. [Leibniz-Institut fuer Festkoerper- und Werkstoffforschung Dresden, Postfach 270016, 01171, Dresden (Germany); Subba Rao, R.V. [Indira Ghandi Centre for Atomic Research, 603 102, Kalpakkam, Tamil Nadu (India)

2003-04-01

Amorphous ribbons of Mg-Y-TM-[Ag](TM: Cu, Ni), prepared by melt spinning, were subjected to electrochemical investigations. Oxide layers formed anodically under potentiostatic control in different electrolytes were investigated by AES and sputter depth profiling. Problems and specific features of characterization of the composition of oxide layers and amorphous ternary or quaternary Mg-based alloys have been investigated. In the alloys the Mg(KL{sub 23}L{sub 23}) peak exhibits a different shape compared to that in the pure element. Analysis of the peak of elastically scattered electrons proved the absence of plasmon loss features, characteristic of pure Mg, in the alloy. A different loss feature emerges in Mg(KL{sub 23}L{sub 23}) and Cu(L{sub 23}VV). The system Mg-Y-TM-[Ag] suffers preferential sputtering. Depletion of Mg and enrichment of TM and Y are found. This is attributed mainly to the preferential sputtering of Mg. Thickness and composition of the formed oxide layer depend on the electrochemical treatment. After removing the oxide by sputtering the concentration of the underlying alloy was found to be affected by the treatment. (orig.)

Effect of Layer-Graded Bond Coats on Edge Stress Concentration and Oxidation Behavior of Thermal Barrier Coatings

Science.gov (United States)

Zhu, Dongming; Ghosn, Louis J.; Miller, Robert A.

1998-01-01

Thermal barrier coating (TBC) durability is closely related to design, processing and microstructure of the coating Z, tn systems. Two important issues that must be considered during the design of a thermal barrier coating are thermal expansion and modulus mismatch between the substrate and the ceramic layer, and substrate oxidation. In many cases, both of these issues may be best addressed through the selection of an appropriate bond coat system. In this study, a low thermal expansion and layer-graded bond coat system, that consists of plasma-sprayed FeCoNiCrAl and FeCrAlY coatings, and a high velocity oxyfuel (HVOF) sprayed FeCrAlY coating, is developed to minimize the thermal stresses and provide oxidation resistance. The thermal expansion and oxidation behavior of the coating system are also characterized, and the strain isolation effect of the bond coat system is analyzed using the finite element method (FEM). Experiments and finite element results show that the layer-graded bond coat system possesses lower interfacial stresses. better strain isolation and excellent oxidation resistance. thus significantly improving the coating performance and durability.

Photoelectrolysis at the oxide-electrolyte interface as interpreted through the 'transition' layer model

Science.gov (United States)

Kalia, R. K.; Weber, Michael F.; Schumacher, L.; Dignam, M. J.

1980-12-01

A transition layer model of the oxide-electrolyte interface, proposed earlier by one of us, is outlined and then examined in the light of experimental data relating primarily to photoelectrolysis of water at semiconducting oxide electrodes. The model provides useful insight into the behaviour of the system and allows a calculation of thc minimum bias potential needed for photoelectrolysis, thus illuminating the origin of the requirement for such an external bias. In order to electrolyse water without a bias, the model requires an n-type oxide to be sufficiently reduced so that it is thermodynamically capable of chemically reducing water to produce hydrogen at 1 atm pressure. Similarly, for bias-free operation, a p-type metal oxide must be thermodynamically unstable with respect to the release of oxygen at 1 atm pressure. In the face of these requirements it is apparent that oxide stability is bound to be in general a serious problem for nonstoichiometric single metal oxides.

Flexible bactericidal graphene oxide–chitosan layers for stem cell proliferation

International Nuclear Information System (INIS)

Mazaheri, M.; Akhavan, O.; Simchi, A.

2014-01-01

Highlights: • Fabrication of flexible graphene oxide–chitosan nanocomposite layers was reported. • The flexibility of the chitosan layers were improved by adding graphene oxide sheets. • The nanocomposite layers with 1.5 wt% graphene oxide content showed yielded flexible and antibacterial surfaces for stem cell proliferation. - Abstract: Graphene oxide (GO)–chitosan composite layers with stacked layer structures were synthesized using chemically exfoliated GO sheets (with lateral dimensions of ∼1 μm and thickness of ∼1 nm), and applied as antibacterial and flexible nanostructured templates for stem cell proliferation. By increasing the GO content from zero to 6 wt%, the strength and elastic modulus of the layers increased ∼80% and 45%, respectively. Similar to the chitosan layer, the GO–chitosan composite layers showed significant antibacterial activity (>77% inactivation after only 3 h) against Staphylococcus aureus bacteria. Surface density of the actin cytoskeleton fibers of human mesenchymal stem cells (hMSCs) cultured on the chitosan and GO(1.5 wt%)–chitosan composite layers was found nearly the same, while it significantly decreased by increasing the GO content to 3 and 6 wt%. Our results indicated that although a high concentration of GO in the chitosan layer (here, 6 wt%) could decelerate the proliferation of the hMSCs on the flexible layer, a low concentration of GO (i.e., 1.5 wt%) not only resulted in biocompatibility but also kept the mechanical flexibility of the self-sterilized layers for high proliferation of hMSCs

Flexible bactericidal graphene oxide–chitosan layers for stem cell proliferation

Energy Technology Data Exchange (ETDEWEB)

Mazaheri, M. [Department of Materials Science and Engineering, Sharif University of Technology, PO Box 11365-9466, Tehran (Iran, Islamic Republic of); Akhavan, O., E-mail: oakhavan@sharif.edu [Department of Physics, Sharif University of Technology, PO Box 11155-9161, Tehran (Iran, Islamic Republic of); Institute for Nanoscience and Nanotechnology, Sharif University of Technology, PO Box 14588-89694, Tehran (Iran, Islamic Republic of); Simchi, A. [Department of Materials Science and Engineering, Sharif University of Technology, PO Box 11365-9466, Tehran (Iran, Islamic Republic of); Institute for Nanoscience and Nanotechnology, Sharif University of Technology, PO Box 14588-89694, Tehran (Iran, Islamic Republic of)

2014-05-01

Highlights: • Fabrication of flexible graphene oxide–chitosan nanocomposite layers was reported. • The flexibility of the chitosan layers were improved by adding graphene oxide sheets. • The nanocomposite layers with 1.5 wt% graphene oxide content showed yielded flexible and antibacterial surfaces for stem cell proliferation. - Abstract: Graphene oxide (GO)–chitosan composite layers with stacked layer structures were synthesized using chemically exfoliated GO sheets (with lateral dimensions of ∼1 μm and thickness of ∼1 nm), and applied as antibacterial and flexible nanostructured templates for stem cell proliferation. By increasing the GO content from zero to 6 wt%, the strength and elastic modulus of the layers increased ∼80% and 45%, respectively. Similar to the chitosan layer, the GO–chitosan composite layers showed significant antibacterial activity (>77% inactivation after only 3 h) against Staphylococcus aureus bacteria. Surface density of the actin cytoskeleton fibers of human mesenchymal stem cells (hMSCs) cultured on the chitosan and GO(1.5 wt%)–chitosan composite layers was found nearly the same, while it significantly decreased by increasing the GO content to 3 and 6 wt%. Our results indicated that although a high concentration of GO in the chitosan layer (here, 6 wt%) could decelerate the proliferation of the hMSCs on the flexible layer, a low concentration of GO (i.e., 1.5 wt%) not only resulted in biocompatibility but also kept the mechanical flexibility of the self-sterilized layers for high proliferation of hMSCs.

The silicon-silicon oxide multilayers utilization as intrinsic layer on pin solar cells

International Nuclear Information System (INIS)

Colder, H.; Marie, P.; Gourbilleau, F.

2008-01-01

Silicon nanostructures are promising candidate for the intrinsic layer on pin solar cells. In this work we report on new material: silicon-rich silicon oxide (SRSO) deposited by reactive magnetron sputtering of a pure silica target and an interesting structure: multilayers consisting of a stack of SRSO and pure silicon oxide layers. Two thicknesses of the SRSO sublayer, t SRSO , are studied 3 nm and 5 nm whereas the thickness of silica sublayer is maintaining at 3 nm. The presence of nanocrystallites of silicon, evidenced by X-Ray diffraction (XRD), leads to photoluminescence (PL) emission at room temperature due to the quantum confinement of the carriers. The PL peak shifts from 1.3 eV to 1.5 eV is correlated to the decreasing of t SRSO from 5 nm down to 3 nm. In the purpose of their potential utilization for i-layer, the optical properties are studied by absorption spectroscopy. The achievement a such structures at promising absorption properties. Moreover by favouring the carriers injection by the tunnel effect between silicon nanograins and silica sublayers, the multilayers seem to be interesting for solar cells

Multifunctional Organic-Semiconductor Interfacial Layers for Solution-Processed Oxide-Semiconductor Thin-Film Transistor.

Science.gov (United States)

Kwon, Guhyun; Kim, Keetae; Choi, Byung Doo; Roh, Jeongkyun; Lee, Changhee; Noh, Yong-Young; Seo, SungYong; Kim, Myung-Gil; Kim, Choongik

2017-06-01

The stabilization and control of the electrical properties in solution-processed amorphous-oxide semiconductors (AOSs) is crucial for the realization of cost-effective, high-performance, large-area electronics. In particular, impurity diffusion, electrical instability, and the lack of a general substitutional doping strategy for the active layer hinder the industrial implementation of copper electrodes and the fine tuning of the electrical parameters of AOS-based thin-film transistors (TFTs). In this study, the authors employ a multifunctional organic-semiconductor (OSC) interlayer as a solution-processed thin-film passivation layer and a charge-transfer dopant. As an electrically active impurity blocking layer, the OSC interlayer enhances the electrical stability of AOS TFTs by suppressing the adsorption of environmental gas species and copper-ion diffusion. Moreover, charge transfer between the organic interlayer and the AOS allows the fine tuning of the electrical properties and the passivation of the electrical defects in the AOS TFTs. The development of a multifunctional solution-processed organic interlayer enables the production of low-cost, high-performance oxide semiconductor-based circuits. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

p-Type semiconducting nickel oxide as an efficiency-enhancing anode interfacial layer in polymer bulk-heterojunction solar cells

Science.gov (United States)

Irwin, Michael D.; Buchholz, D. Bruce; Hains, Alexander W.; Chang, Robert P. H.; Marks, Tobin J.

2008-01-01

To minimize interfacial power losses, thin (5–80 nm) layers of NiO, a p-type oxide semiconductor, are inserted between the active organic layer, poly(3-hexylthiophene) (P3HT) + [6,6]-phenyl-C61 butyric acid methyl ester (PCBM), and the ITO (tin-doped indium oxide) anode of bulk-heterojunction ITO/P3HT:PCBM/LiF/Al solar cells. The interfacial NiO layer is deposited by pulsed laser deposition directly onto cleaned ITO, and the active layer is subsequently deposited by spin-coating. Insertion of the NiO layer affords cell power conversion efficiencies as high as 5.2% and enhances the fill factor to 69% and the open-circuit voltage (Voc) to 638 mV versus an ITO/P3HT:PCBM/LiF/Al control device. The value of such hole-transporting/electron-blocking interfacial layers is clearly demonstrated and should be applicable to other organic photovoltaics.

OXIDATION OF CYCLOHEXANOL ON PHOSPHOTUNGSTIC ACID ANION INTERCALATED LAYERED DOUBLE HYDROXIDES WITH AQUEOUS H2O2 AS OXIDANT

Directory of Open Access Journals (Sweden)

Xueli Bai

Full Text Available The layered double hydroxides (LDH of Mg2AlNi and Mg3Al pillared by Keggin-type phosphotungstic acid anion (POM, i.e. Mg2AlNi-POM LDH and Mg3Al-POM LDH were synthesized by an ion-exchange method. The synthesized POM intercalated LDH compounds were characterized using various techniques such as FTIR, XRD, TGA and BET. The observed results show that the obtained catalysts retain the layer structure of LDH. Compared with the binary Mg3Al-POM LDH, the ternary Mg2AlNi-POM LDH catalyst indicated a higher thermal and chemical stability. The catalytic activity of the resulting LDH-POM was also assessed in the green oxidation of cyclohexanol with aqueous H2O2 as an oxidant. The Mg2AlNi-POM LDH showed a much higher conversion and selectivity for cyclohexanone than the corresponding Mg3Al-POM LDH catalyst.

Binary Oxide p-n Heterojunction Piezoelectric Nanogenerators with an Electrochemically Deposited High p-Type Cu2O Layer.

Science.gov (United States)

Baek, Seung Ki; Kwak, Sung Soo; Kim, Joo Sung; Kim, Sang Woo; Cho, Hyung Koun

2016-08-31

The high performance of ZnO-based piezoelectric nanogenerators (NGs) has been limited due to the potential screening from intrinsic electron carriers in ZnO. We have demonstrated a novel approach to greatly improve piezoelectric power generation by electrodepositing a high-quality p-type Cu2O layer between the piezoelectric semiconducting film and the metal electrode. The p-n heterojunction using only oxides suppresses the screening effect by forming an intrinsic depletion region, and thus sufficiently enhances the piezoelectric potential, compared to the pristine ZnO piezoelectric NG. Interestingly, a Sb-doped Cu2O layer has high mobility and low surface trap states. Thus, this doped layer is an attractive p-type material to significantly improve piezoelectric performance. Our results revealed that p-n junction NGs consisting of Au/ZnO/Cu2O/indium tin oxide with a Cu2O:Sb (cuprous oxide with a small amount of antimony) layer of sufficient thickness (3 μm) exhibit an extraordinarily high piezoelectric potential of 0.9 V and a maximum output current density of 3.1 μA/cm(2).

Investigation of thin oxide layer removal from Si substrates using an SiO2 atomic layer etching approach: the importance of the reactivity of the substrate

International Nuclear Information System (INIS)

Metzler, Dominik; Oehrlein, Gottlieb S; Li, Chen; Lai, C Steven; Hudson, Eric A

2017-01-01

The evaluation of a plasma-based atomic layer etching (ALE) approach for native oxide surface removal from Si substrates is described. Objectives include removal of the native oxide while minimizing substrate damage, surface residues and substrate loss. Oxide thicknesses were measured using in situ ellipsometry and surface chemistry was analyzed by x-ray photoelectron spectroscopy. The cyclic ALE approach when used for removal of native oxide SiO 2 from a Si substrate did not remove native oxide to the extent required. This is due to the high reactivity of the silicon substrate during the low-energy (<40 eV) ion bombardment phase of the cyclic ALE approach which leads to reoxidation of the silicon surface. A modified process, which used continuously biased Ar plasma with periodic CF 4 injection, achieved significant oxygen removal from the Si surface, with some residual carbon and fluorine. A subsequent H 2 /Ar plasma exposure successfully removed residual carbon and fluorine while passivating the silicon surface. The combined treatment reduced oxygen and carbon levels to about half compared to as received silicon surfaces. The downside of this process sequence is a net loss of about 40 Å of Si. A generic insight of this work is the importance of the substrate and final surface chemistry in addition to precise etch control of the target film for ALE processes. By a fluorocarbon-based ALE technique, thin SiO 2 layer removal at the Ångstrom level can be precisely performed from an inert substrate, e.g. a thick SiO 2 layer. However, from a reactive substrate, like Si, complete removal of the thin SiO 2 layer is prevented by the high reactivity of low energy Ar + ion bombarded Si. The Si surfaces are reoxidized during the ALE ion bombardment etch step, even for very clean and ultra-low O 2 process conditions. (paper)

Study of an Amorphous Silicon Oxide Buffer Layer for p-Type Microcrystalline Silicon Oxide/n-Type Crystalline Silicon Heterojunction Solar Cells and Their Temperature Dependence

Directory of Open Access Journals (Sweden)

Taweewat Krajangsang

2014-01-01

Full Text Available Intrinsic hydrogenated amorphous silicon oxide (i-a-SiO:H films were used as front and rear buffer layers in crystalline silicon heterojunction (c-Si-HJ solar cells. The surface passivity and effective lifetime of these i-a-SiO:H films on an n-type silicon wafer were improved by increasing the CO2/SiH4 ratios in the films. Using i-a-SiO:H as the front and rear buffer layers in c-Si-HJ solar cells was investigated. The front i-a-SiO:H buffer layer thickness and the CO2/SiH4 ratio influenced the open-circuit voltage (Voc, fill factor (FF, and temperature coefficient (TC of the c-Si-HJ solar cells. The highest total area efficiency obtained was 18.5% (Voc=700 mV, Jsc=33.5 mA/cm2, and FF=0.79. The TC normalized for this c-Si-HJ solar cell efficiency was −0.301%/°C.

Oxidation behavior of austenitic iron-base ODS alloy in supercritical water

Energy Technology Data Exchange (ETDEWEB)

Behnamian, Y.; Dong, Z.; Zahiri, R.; Kohandehghan, A.; Mitlin, D., E-mail: behnamia@ualberta.ca, E-mail: zdong@ualberta.ca, E-mail: kohandeh@ualberta.ca, E-mail: rzahiris@ualberta.ca, E-mail: dave.mitlin@ualberta.ca [Univ. of Alberta, Edmondon, AB (Canada); Zhou, Z., E-mail: zhouzhj@mater.ustb.edu.cn [Univ. of Science and Tech. Beijing, Beijing (China); Chen, W.; Luo, J., E-mail: weixing.chen@ualberta.ca, E-mail: Jingli.luo@ualberta.ca [Univ. of Alberta, Edmonton, AB (Canada); Zheng, W., E-mail: wenyue@nrcan.gc.ca [Natural Resources Canada, Canmet MATERIALS, Hamilton, ON (Canada); Guzonas, D. [Atomic Energy of Canada Limited, Chalk River, ON (Canada)

2014-07-01

In this study, the effect of exposure time on the corrosion of the 304 stainless steel based oxide dispersion strengthened alloy, SS304ODS, in supercritical water was investigated at 650 {sup o}C with constant dissolved oxygen concentration. The results show that the oxidation of SS304ODS in supercritical water followed a parabolic law at 650 {sup o}C. Discontinuous oxide scale with two distinct layers has formed after 550 hours. The inner layer was chromium-rich while the outer layer was iron-rich (Magnetite). The oxide islands grow with increasing the exposure time. With increasing exposure time, the quantity of oxide islands increased in which major preferential growth along oxide-substrate interface was observed. The possible mechanism of SS304ODS oxidation in supercritical water was also discussed. (author)

Achieving high field-effect mobility in amorphous indium-gallium-zinc oxide by capping a strong reduction layer.

Science.gov (United States)

Zan, Hsiao-Wen; Yeh, Chun-Cheng; Meng, Hsin-Fei; Tsai, Chuang-Chuang; Chen, Liang-Hao

2012-07-10

An effective approach to reduce defects and increase electron mobility in a-IGZO thin-film transistors (a-IGZO TFTs) is introduced. A strong reduction layer, calcium, is capped onto the back interface of a-IGZO TFT. After calcium capping, the effective electron mobility of a-IGZO TFT increases from 12 cm(2) V(-1) s(-1) to 160 cm(2) V(-1) s(-1). This high mobility is a new record, which implies that the proposed defect reduction effect is key to improve electron transport in oxide semiconductor materials. Copyright © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Investigation of optical and magneto-optical constants and their surface-oxide-layer effects of single-crystalline GdCo2

International Nuclear Information System (INIS)

Lee, S.J.; Kim, K.J.; Canfield, P.C.; Lynch, D.W.

2000-01-01

We investigated the optical and magneto-optical properties of single-crystalline GdCo 2 by spectroscopic ellipsometry (SE) and magneto-optical Kerr spectrometry (MOKS). The diagonal component of the optical conductivity tensor of the compound was obtained by SE in the 1.5-5.5 eV region and the off-diagonal component by using the measured magneto-optical parameters (Kerr rotation and ellipticity) by MOKS and the SE data. The measured spectra were corrected for the surface oxide layer by employing a three-phase model treating the oxide layer as nonmagnetic with constant refractive index. The magnitude of the diagonal component becomes enhanced and the optical transition structures of the off-diagonal component become more pronounced by the oxide correction. The overall optical and magneto-optical data are discussed in terms of the calculated spin-polarized band structure and optical absorption of the compound and the effect of the surface oxide layer

Platinum-induced structural collapse in layered oxide polycrystalline films

International Nuclear Information System (INIS)

Wang, Jianlin; Liu, Changhui; Huang, Haoliang; Fu, Zhengping; Peng, Ranran; Zhai, Xiaofang; Lu, Yalin

2015-01-01

Effect of a platinum bottom electrode on the SrBi 5 Fe 1−x Co x Ti 4 O 18 layered oxide polycrystalline films was systematically studied. The doped cobalt ions react with the platinum to form a secondary phase of PtCoO 2 , which has a typical Delafossite structure with a weak antiferromagnetism and an exceptionally high in-plane electrical conductivity. Formation of PtCoO 2 at the interface partially consumes the cobalt dopant and leads to the structural collapsing from 5 to 4 layers, which was confirmed by X-ray diffraction and high resolution transmission electron microscopy measurements. Considering the weak magnetic contribution from PtCoO 2 , the observed ferromagnetism should be intrinsic of the Aurivillius compounds. Ferroelectric properties were also indicated by the piezoresponse force microscopy. In this work, the platinum induced secondary phase at the interface was observed, which has a strong impact on Aurivillius structural configuration and thus the ferromagnetic and ferroelectric properties

Monitoring the oxidation of nuclear fuel cladding using Raman spectroscopy

International Nuclear Information System (INIS)

Mi, Hongyi; Mikael, Solomon; Allen, Todd; Sridharan, Kumar; Butt, Darryl; Blanchard, James P.; Ma, Zhenqiang

2014-01-01

In order to observe Zircaloy-4 (Zr-4) cladding oxidation within a spent fuel canister, cladding oxidized in air at 500 °C was investigated by micro-Raman spectroscopy to measure the oxide layer thickness. Systematic Raman scans were performed to study the relationship between typical Raman spectra and various oxide layer thicknesses. The thicknesses of the oxide layers developed for various exposure times were measured by cross-sectional Scanning Electron Microscopy (SEM). The results of this work reveal that each oxide layer thickness has a corresponding typical Raman spectrum. Detailed analysis suggests that the Raman scattering peaks around wave numbers of 180 cm −1 and 630 cm −1 are the best choices for accurately determining the oxide layer thickness. After Gaussian–Lorentzian deconvolution, these two peaks can be quantitatively represented by four peaks. The intensities of the deconvoluted peaks increase consistently as the oxide layer becomes thicker and sufficiently strong signals are produced, allowing one to distinguish the bare and oxidized cladding samples, as well as samples with different oxide layer thicknesses. Hence, a process that converts sample oxide layer thickness to optical signals can be achieved

Toward Increasing Micropore Volume between Hybrid Layered Perovskites with Silsesquioxane Interlayers.

Science.gov (United States)

Kataoka, Sho; Kamimura, Yoshihiro; Endo, Akira

2018-04-10

Hybrid organic-inorganic layered perovskites are typically nonporous solids. However, the incorporation of silsesquioxanes with a cubic cage structure as interlayer materials creates micropores between the perovskite layers. In this study, we increase in the micropore volume in layered perovskites by replacing a portion of the silsesquioxane interlayers with organic amines. In the proposed method, approximately 20% of the silsesquioxane interlayers can be replaced without changing the layer distance owing to the size of the silsesquioxane. When small amines (e.g., ethylamine) are used in this manner, the micropore volume of the obtained hybrid layered perovskites increases by as much as 44%; when large amines (e.g., phenethylamine) are used, their micropore volume decreases by as much as 43%. Through the variation of amine fraction, the micropore volume can be adjusted in the range. Finally, the magnetic moment measurements reveal that the layered perovskites with mixed interlayers exhibit ferromagnetic ordering at temperature below 20 K, thus indicating that the obtained perovskites maintain their functions as layered perovskites.

Presence of Fe-Al binary oxide adsorbent cake layer in ceramic membrane filtration and their impact for removal of HA and BSA.

Science.gov (United States)

Kim, Kyung-Jo; Jang, Am

2018-04-01

To enhance the removal of natural organic matter (NOM) in ceramic (Ce) membrane filtration, an iron-aluminum binary oxide (FAO) was applied to the ceramic membrane surface as the adsorbent cake layer, and it was compared with heated aluminum oxide (HAO) for the evaluation of the control of NOM. Both the HAO and FAO adsorbent cake layers efficiently removed the NOM regardless of NOM's hydrophobic/hydrophilic characteristics, and the dissolved organic carbon (DOC) removal in NOM for FAO was 1-1.12 times greater than that for HAO, which means FAO was more efficient in the removal of DOC in NOM. FAO (0.03 μm), which is smaller in size than HAO (0.4 μm), had greater flux reduction than HAO. The flux reduction increased as the filtration proceeded because most of the organic foulants (colloid/particles and soluble NOM) were captured by the adsorbent cake layer, which caused fouling between the membrane surface and the adsorbent cake layer. However, no chemically irreversible fouling was observed on the Ce membrane at the end of the FAO adsorbent cake layer filtration. This means that a stable adsorbent cake layer by FAO formed on the Ce membrane, and that the reduced pure water flux of the Ce membrane, resulting from the NOM fouling, can easily be recovered through physicochemical cleaning. Copyright © 2018 Elsevier Ltd. All rights reserved.

Exposure to automotive pollution increases plasma susceptibility to oxidation.

Science.gov (United States)

Sharman, James E; Coombes, Jeff S; Geraghty, Dominic P; Fraser, David I

2002-01-01

Low-density lipoprotein oxidation is implicated in the development of atherosclerosis. Plasma susceptibility to oxidation may be used as a marker of low-density lipoprotein oxidation and thus predict atherosclerotic risk. In this study the authors investigated the relationship between plasma susceptibility to oxidation and exposure to automotive pollution in a group of automobile mechanics (n = 16) exposed to high levels of automotive pollution, vs. matched controls (n = 13). The authors induced plasma oxidation by a free radical initiator and they determined susceptibility to oxidation by (1) change in absorbance at 234 nm, (2) lag time to conjugated diene formation, and (3) linear slope of the oxidation curve. Mechanics had significantly higher values (mean +/- standard error) for change in absorbance (1.60 +/- 0.05 vs. 1.36 +/- 0.05; p automotive pollutants increases plasma susceptibility to oxidation and may, in the long-term, increase the risk of developing atherosclerosis.

Atomic layer epitaxy of hematite on indium tin oxide for application in solar energy conversion

Science.gov (United States)

Martinson, Alex B.; Riha, Shannon; Guo, Peijun; Emery, Jonathan D.

2016-07-12

A method to provide an article of manufacture of iron oxide on indium tin oxide for solar energy conversion. An atomic layer epitaxy method is used to deposit an uncommon bixbytite-phase iron (III) oxide (.beta.-Fe.sub.2O.sub.3) which is deposited at low temperatures to provide 99% phase pure .beta.-Fe.sub.2O.sub.3 thin films on indium tin oxide. Subsequent annealing produces pure .alpha.-Fe.sub.2O.sub.3 with well-defined epitaxy via a topotactic transition. These highly crystalline films in the ultra thin film limit enable high efficiency photoelectrochemical chemical water splitting.

Ozone variability and halogen oxidation within the Arctic and sub-Arctic springtime boundary layer

Directory of Open Access Journals (Sweden)

J. B. Gilman

2010-11-01

Full Text Available The influence of halogen oxidation on the variabilities of ozone (O₃ and volatile organic compounds (VOCs within the Arctic and sub-Arctic atmospheric boundary layer was investigated using field measurements from multiple campaigns conducted in March and April 2008 as part of the POLARCAT project. For the ship-based measurements, a high degree of correlation (r = 0.98 for 544 data points collected north of 68° N was observed between the acetylene to benzene ratio, used as a marker for chlorine and bromine oxidation, and O₃ signifying the vast influence of halogen oxidation throughout the ice-free regions of the North Atlantic. Concurrent airborne and ground-based measurements in the Alaskan Arctic substantiated this correlation and were used to demonstrate that halogen oxidation influenced O₃ variability throughout the Arctic boundary layer during these springtime studies. Measurements aboard the R/V Knorr in the North Atlantic and Arctic Oceans provided a unique view of the transport of O₃-poor air masses from the Arctic Basin to latitudes as far south as 52° N. FLEXPART, a Lagrangian transport model, was used to quantitatively determine the exposure of air masses encountered by the ship to first-year ice (FYI, multi-year ice (MYI, and total ICE (FYI+MYI. O₃ anti-correlated with the modeled total ICE tracer (r = −0.86 indicating that up to 73% of the O₃ variability measured in the Arctic marine boundary layer could be related to sea ice exposure.

Supported Layered Double Hydroxide-Related Mixed Oxides and Their Application in the Total Oxidation of Volatile Organic Compounds

Czech Academy of Sciences Publication Activity Database

Kovanda, F.; Jirátová, Květa

2011-01-01

Roč. 53, č. 2 (2011), s. 305-316 ISSN 0169-1317 R&D Projects: GA ČR GAP106/10/1762; GA ČR GA106/09/1664 Institutional research plan: CEZ:AV0Z40720504 Keywords : layered double hydroxides * hydrothermal reaction * mixed oxides Subject RIV: CI - Industrial Chemistry, Chemical Engineering Impact factor: 2.474, year: 2011

The constitution and crystallography of thin thermal oxide layers on epsilon-Fesub2Nsub1-x

DEFF Research Database (Denmark)

Graat, Peter C.J.; Zandbergen, Henny W.; Somers, Marcel A. J.

2000-01-01

Oxide layers formed on epsilon-Fe2N1-x were investigated with X-ray photoelectron spectroscopy, X-ray diffraction, and in particular with high-resolution transmission electron microscopy. Prior to oxidation, the epsilon-Fe2N1-x substrates were either exposed to air at room temperature, or subject...

Reusable urine glucose sensor based on functionalized graphene oxide conjugated Au electrode with protective layers

Directory of Open Access Journals (Sweden)

Hye Youn Kim

2014-09-01

Full Text Available An electrochemical based system with multiple layers coated on a functionalized graphene oxide Au electrode was developed to measure glucose concentration in urine in a more stable way. Two types of gold printed circuit boards were fabricated and graphene oxide was immobilized on their surface by chemical adsorption. Multiple layers, composed of a couple of polymers, were uniformly coated on the surface electrode. This device exhibited higher electrochemical responses against glucose, a greater resistivity in the presence of interferential substances in urine, and durable stabilities for longer periods of time than conventional units. The efficiency in current level according to the order and ratio of solution was evaluated during the immobilization of the layer. The fabricated electrodes were then also evaluated using hyperglycemic clinical samples and compared with the patterns of blood glucose measured with commercially available glucose meters. Our findings show that not only was their pattern similar but this similarity is well correlated.

Advanced oxidation of rhodamine B with hydrogen peroxide over ZnCr layered double hydroxide catalysts

Directory of Open Access Journals (Sweden)

Nguyen Tien Thao

2017-09-01

Full Text Available Zn/Cr layered zinc hydroxide materials with different molar ratios of Cr/Zn have been synthesized through the coprecipitation method at pH of 9.0–9.5. At high Cr/Zn molar ratios of 0.5/1–1/3, the materials possess some layered structure with carbonate anions between the interlayer galleries. The catalysts present uniform particle sizes and quite high surface area. An isomorphous substitution of Zn2+ by Cr3+ in the brucite-like sheets makes the layered Cr-doped zinc hydroxides potential catalysts for efficient oxidation of rhodamine B with H2O2 solution. The experimental results indicated that the intra-lattice Cr3+ ions are more active than Cr2O3 components in the oxidative removal of rhodamine B. The degradation efficiency is dependent on the intra lattice Cr3+ contents and reaction variables. The Cr/Zn LDH gave a high decolorization (99% of rhodamine B at near neutral pH and room temperature.

Subattoampere current induced by single ions in silicon oxide layers of nonvolatile memory cells

International Nuclear Information System (INIS)

Cellere, G.; Paccagnella, A.; Larcher, L.; Visconti, A.; Bonanomi, M.

2006-01-01

A single ion impinging on a thin silicon dioxide layer generates a number of electron/hole pairs proportional to its linear energy transfer coefficient. Defects generated by recombination can act as a conductive path for electrons that cross the oxide barrier, thanks to a multitrap-assisted mechanism. We present data on the dependence of this phenomenon on the oxide thickness by using floating gate memory arrays. The tiny number of excess electrons stored in these devices allows for extremely high sensitivity, impossible with any direct measurement of oxide leakage current. Results are of particular interest for next generation devices

Sputtered indium oxide films

International Nuclear Information System (INIS)

Gillery, F.H.

1986-01-01

A method is described for depositing on a substrate multiple layer films comprising at least one primary layer of a metal oxide and at least one primary layer of a metal other than the metal of the oxide layer. The improvement described here comprises improving the adhesion between the metal oxide and metal layers by depositing between the layers an intermediate metal-containing layer having an affinity for both the metal and metal oxide layers. An article of manufacture is described comprising a nonmetallic substrate, and deposited thereon in any order: a. at least one coating layer of metal; b. at least one coating layer of an oxide of a metal other than the metal of the metal layer; and c. deposited between the metal and metal oxide layers an intermediate metal-containing layer having an affinity for both the metal and metal oxide layers

Influence of Surface Properties of Filtration-Layer Metal Oxide on Ceramic Membrane Fouling during Ultrafiltration of Oil/Water Emulsion.

Science.gov (United States)

Lu, Dongwei; Zhang, Tao; Gutierrez, Leo; Ma, Jun; Croué, Jean-Philippe

2016-05-03

In this work, ceramic ultrafiltration membranes deposited with different metal oxides (i.e., TiO2, Fe2O3, MnO2, CuO, and CeO2) of around 10 nm in thickness and similar roughness were tested for O/W emulsion treatment. A distinct membrane fouling tendency was observed, which closely correlated to the properties of the filtration-layer metal oxides (i.e., surface hydroxyl groups, hydrophilicity, surface charge, and adhesion energy for oil droplets). Consistent with the distinct bond strength of the surface hydroxyl groups, hydrophilicity of these common metal oxides is quite different. The differences in hydrophilicity consequently lead to different adhesion of these metal oxides toward oil droplets, consistent with the irreversible membrane fouling tendency. In addition, the surface charge of the metal oxide opposite to that of emulsion can help to alleviate irreversible membrane fouling in ultrafiltration. Highly hydrophilic Fe2O3 with the lowest fouling tendency could be a potential filtration-layer material for the fabrication/modification of ceramic membranes for O/W emulsion treatment. To the best of our knowledge, this is the first study clearly showing the correlations between surface properties of filtration-layer metal oxides and ceramic membrane fouling tendency by O/W emulsion.

Influence of surface properties of filtration-layer metal oxide on ceramic membrane fouling during ultrafiltration of oil/water emulsion

KAUST Repository

Lu, Dongwei; Zhang, Tao; Gutierrez, Leo; Ma, Jun; Croue, Jean-Philippe

2016-01-01

In this work, ceramic ultrafiltration membranes deposited with different metal oxides (i.e., TiO2, Fe2O3, MnO2, CuO, and CeO2) of around 10 nm in thickness and similar roughness were tested for O/W emulsion treatment. Distinct membrane fouling tendency was observed, which closely correlated to the properties of the filtration-layer metal oxides (i.e. surface hydroxyl groups, hydrophilicity, surface charge, and adhesion energy for oil droplets). In consistent with the distinct bond strength of the surface hydroxyl groups, hydrophilicity of these common metal oxides are quite different. The differences in hydrophilicity consequently lead to different adhesion of these metal oxides towards oil droplets which consists very well with irreversible membrane fouling tendency. In addition, the surface charge of the metal oxide opposite to that of emulsion can help to alleviate irreversible membrane fouling in ultrafiltration. Highly hydrophilic Fe2O3 with lowest fouling tendency could be a potential filtration-layer material for the fabrication/modification of ceramic membranes for O/W emulsion treatment. To the best of our knowledge, this is the first study clearly showing the correlations between surface properties of filtration-layer metal oxides and ceramic membrane fouling tendency by O/W emulsion.

Influence of surface properties of filtration-layer metal oxide on ceramic membrane fouling during ultrafiltration of oil/water emulsion

KAUST Repository

Lu, Dongwei

2016-04-01

In this work, ceramic ultrafiltration membranes deposited with different metal oxides (i.e., TiO2, Fe2O3, MnO2, CuO, and CeO2) of around 10 nm in thickness and similar roughness were tested for O/W emulsion treatment. Distinct membrane fouling tendency was observed, which closely correlated to the properties of the filtration-layer metal oxides (i.e. surface hydroxyl groups, hydrophilicity, surface charge, and adhesion energy for oil droplets). In consistent with the distinct bond strength of the surface hydroxyl groups, hydrophilicity of these common metal oxides are quite different. The differences in hydrophilicity consequently lead to different adhesion of these metal oxides towards oil droplets which consists very well with irreversible membrane fouling tendency. In addition, the surface charge of the metal oxide opposite to that of emulsion can help to alleviate irreversible membrane fouling in ultrafiltration. Highly hydrophilic Fe2O3 with lowest fouling tendency could be a potential filtration-layer material for the fabrication/modification of ceramic membranes for O/W emulsion treatment. To the best of our knowledge, this is the first study clearly showing the correlations between surface properties of filtration-layer metal oxides and ceramic membrane fouling tendency by O/W emulsion.

Two-Dimensional Electron Gas at SrTiO3-Based Oxide Heterostructures via Atomic Layer Deposition

Directory of Open Access Journals (Sweden)

Sang Woon Lee

2016-01-01

Full Text Available Two-dimensional electron gas (2DEG at an oxide interface has been attracting considerable attention for physics research and nanoelectronic applications. Early studies reported the formation of 2DEG at semiconductor interfaces (e.g., AlGaAs/GaAs heterostructures with interesting electrical properties such as high electron mobility. Besides 2DEG formation at semiconductor junctions, 2DEG was realized at the interface of an oxide heterostructure such as the LaAlO3/SrTiO3 (LAO/STO heterojunction. The origin of 2DEG was attributed to the well-known “polar catastrophe” mechanism in oxide heterostructures, which consist of an epitaxial LAO layer on a single crystalline STO substrate among proposed mechanisms. Recently, it was reported that the creation of 2DEG was achieved using the atomic layer deposition (ALD technique, which opens new functionality of ALD in emerging nanoelectronics. This review is focused on the origin of 2DEG at oxide heterostructures using the ALD process. In particular, it addresses the origin of 2DEG at oxide interfaces based on an alternative mechanism (i.e., oxygen vacancies.

Increased oxidative DNA damage in mononuclear leukocytes in vitiligo

Energy Technology Data Exchange (ETDEWEB)

Giovannelli, Lisa [Department of Preclinical and Clinical Pharmacology, University of Florence, Viale Pieraccini 6, 50139 Florence (Italy)]. E-mail: lisag@pharm.unifi.it; Bellandi, Serena [Department of Dermatological Sciences, University of Florence, Viale Pieraccini 6, 50139 Florence (Italy); Pitozzi, Vanessa [Department of Preclinical and Clinical Pharmacology, University of Florence, Viale Pieraccini 6, 50139 Florence (Italy); Fabbri, Paolo [Department of Dermatological Sciences, University of Florence, Viale Pieraccini 6, 50139 Florence (Italy); Dolara, Piero [Department of Preclinical and Clinical Pharmacology, University of Florence, Viale Pieraccini 6, 50139 Florence (Italy); Moretti, Silvia [Department of Dermatological Sciences, University of Florence, Viale Pieraccini 6, 50139 Florence (Italy)

2004-11-22

Vitiligo is an acquired pigmentary disorder of the skin of unknown aetiology. The autocytotoxic hypothesis suggests that melanocyte impairment could be related to increased oxidative stress. Evidences have been reported that in vitiligo oxidative stress might also be present systemically. We used the comet assay (single cell alkaline gel electrophoresis) to evaluate DNA strand breaks and DNA base oxidation, measured as formamidopyrimidine DNA glycosylase (FPG)-sensitive sites, in peripheral blood cells from patients with active vitiligo and healthy controls. The basal level of oxidative DNA damage in mononuclear leukocytes was increased in vitiligo compared to normal subjects, whereas DNA strand breaks (SBs) were not changed. This alteration was not accompanied by a different capability to respond to in vitro oxidative challenge. No differences in the basal levels of DNA damage in polymorphonuclear leukocytes were found between patients and healthy subjects. Thus, this study supports the hypothesis that in vitiligo a systemic oxidative stress exists, and demonstrates for the first time the presence of oxidative alterations at the nuclear level. The increase in oxidative DNA damage shown in the mononuclear component of peripheral blood leukocytes from vitiligo patients was not particularly severe. However, these findings support an adjuvant role of antioxidant treatment in vitiligo.

Increased oxidative DNA damage in mononuclear leukocytes in vitiligo

International Nuclear Information System (INIS)

Giovannelli, Lisa; Bellandi, Serena; Pitozzi, Vanessa; Fabbri, Paolo; Dolara, Piero; Moretti, Silvia

2004-01-01

Vitiligo is an acquired pigmentary disorder of the skin of unknown aetiology. The autocytotoxic hypothesis suggests that melanocyte impairment could be related to increased oxidative stress. Evidences have been reported that in vitiligo oxidative stress might also be present systemically. We used the comet assay (single cell alkaline gel electrophoresis) to evaluate DNA strand breaks and DNA base oxidation, measured as formamidopyrimidine DNA glycosylase (FPG)-sensitive sites, in peripheral blood cells from patients with active vitiligo and healthy controls. The basal level of oxidative DNA damage in mononuclear leukocytes was increased in vitiligo compared to normal subjects, whereas DNA strand breaks (SBs) were not changed. This alteration was not accompanied by a different capability to respond to in vitro oxidative challenge. No differences in the basal levels of DNA damage in polymorphonuclear leukocytes were found between patients and healthy subjects. Thus, this study supports the hypothesis that in vitiligo a systemic oxidative stress exists, and demonstrates for the first time the presence of oxidative alterations at the nuclear level. The increase in oxidative DNA damage shown in the mononuclear component of peripheral blood leukocytes from vitiligo patients was not particularly severe. However, these findings support an adjuvant role of antioxidant treatment in vitiligo

Synthesis of graphene oxide through different oxidation degrees for solar cells

Science.gov (United States)

Zhang, Xiaoshan; Wang, Huan; Huang, Tianjiao; Wen, Lingling; Zhou, Liya

2018-03-01

Graphene is known as an electro-chemical material and widely used in electro-chemical devices, especially in solar cell. Decreasing the thickness of the layer is a critical way to improve the electrochemical property of solar cells as far as possible. Among the various oxidation approaches, presented herein is a facile approach, which is easier, less cost and more effective, environmental benign with the greener processing and without any requirement for post purification, towards the synthesis of graphene oxide (GO) with different oxidation degrees by potassium ferrate (K2FeO4). A modified method using less amount of oxidizing agent is reported herein. It is the pretreatment of the synthesis of graphite, which maintains the thermal cycle of the system. This novel reports to compound GO with controlled oxidation degrees can not only increase the quantity of oxygen-containing functional groups on GO surface, increase space between graphene oxide layer and facilitate the dispersion of graphene in aqueous solution. Thus, the modified method shows prospect for large-scale production of graphene oxide and its novel application, in addition to its derivative and market potential for solar cells.

New Layered Oxide-Fluoride Perovskites: KNaNbOF5 and KNaMO2F4 (M = Mo6+, W6+

Directory of Open Access Journals (Sweden)

Rachelle Ann F. Pinlac

2011-03-01

Full Text Available KNaNbOF5 and KNaMO2F4 (M = Mo6+, W6+, three new layered oxide-fluoride perovskites with the general formula ABB’X6, form from the combination of a second-order Jahn-Teller d0 transition metal and an alkali metal (Na+ on the B-site. Alternating layers of cation vacancies and K+ cations on the A-site complete the structure. The K+ cations are found in the A-site layer where the fluoride ions are located. The A-site is vacant in the adjacent A-site layer where the axial oxides are located. This unusual layered arrangement of unoccupied A-sites and under bonded oxygen has not been observed previously although many perovskite-related structures are known.

Ternary Oxides in the TiO2-ZnO System as Efficient Electron-Transport Layers for Perovskite Solar Cells with Efficiency over 15.

Science.gov (United States)

Yin, Xiong; Xu, Zhongzhong; Guo, Yanjun; Xu, Peng; He, Meng

2016-11-02

Perovskite solar cells, which utilize organometal-halide perovskites as light-harvesting materials, have attracted great attention due to their high power conversion efficiency (PCE) and potentially low cost in fabrication. A compact layer of TiO 2 or ZnO is generally applied as electron-transport layer (ETL) in a typical perovskite solar cell. In this study, we explored ternary oxides in the TiO 2 -ZnO system to find new materials for the ETL. Compact layers of titanium zinc oxides were readily prepared on the conducting substrate via spray pyrolysis method. The optical band gap, valence band maximum and conduction band minimum of the ternary oxides varied significantly with the ratio of Ti to Zn, surprisingly, in a nonmonotonic way. When a zinc-rich ternary oxide was applied as ETL for the device, a PCE of 15.10% was achieved, comparable to that of the device using conventional TiO 2 ETL. Interestingly, the perovskite layer deposited on the zinc-rich ternary oxide is stable, in sharp contrast with that fabricated on a ZnO layer, which will turn into PbI 2 readily when heated. These results indicate that potentially new materials with better performance can be found for ETL of perovskite solar cells in ternary oxides, which deserve more exploration.

Modulating the size of ZnO nanorods on SiO2 substrates by incorporating reduced graphene oxide into the seed layer solution

Directory of Open Access Journals (Sweden)

Tzu-Yi Yu

2017-06-01

Full Text Available In this research, reduced graphene oxide was incorporated into the ZnO seed layer to modulate the rod diameter of ZnO nanorods (NRs during solgel/hydrothermal growth. To characterize the reduced graphene oxide incorporated ZnO NRs, multiple material analysis techniques including field-emission scanning electron microscopy, surface contact angle measurements, X-ray diffraction, and photoluminescence were used to explore distinct properties of these size modulatable NRs. Results indicate ZnO NRs with smaller diameters could be observed with more reduced graphene oxide added into the ZnO seed layer. Furthermore, better crystallinity, higher hydrophobicity and lower defect concentration could be obtained with more amount of reduced graphene oxide added into the ZnO seed layer. The modulatable reduced graphene oxide-incorporated ZnO NRs growth is promising for future ZnO NRs based nanodevice applications.

Molecular beam epitaxy of InN layers on Sapphire, GaN and indium tin oxide

Energy Technology Data Exchange (ETDEWEB)

Denker, Christian; Landgraf, Boris; Schuhmann, Henning; Malindretos, Joerg; Seibt, Michael; Rizzi, Angela [IV. Physikalisches Institut, Georg-August-Universitaet Goettingen (Germany); Segura-Ruiz, Jaime; Gomez-Gomez, Maribel; Cantarero, Andres [Materials Science Institute, University of Valencia, Paterna (Spain)

2009-07-01

Among the group-III nitrides semiconductors, InN is the one with the narrowest gap (0.67 eV), lowest effective electron mass and highest peak drift velocity. It is therefore a very interesting material for several applications, in particular semiconductor solar cells. Furthermore, the high electron affinity makes it suitable also as electrode material for organic solar cells. InN layers were grown by molecular beam epitaxy on MOCVD GaN templates, on bare c-plane sapphire and on polycrystalline indium tin oxide. On all substrates the III-V ratio as well as the substrate temperature was varied. A RHEED analysis of InN growth on GaN showed a relatively sharp transition from N-rich and columnar growth to In-rich growth with droplet formation by increasing the In flux impinging on the surface. The InN layers on single crystalline substrates were characterized by SEM, AFM, XRD, PL and Raman. The InN layers on ITO were mainly analyzed with respect to the surface morphology with SEM. HRTEM in cross section gives insight into the structure of the interface to the ITO substrate.

Thickness measurement of a thin hetero-oxide film with an interfacial oxide layer by X-ray photoelectron spectroscopy

Science.gov (United States)

Kim, Kyung Joong; Lee, Seung Mi; Jang, Jong Shik; Moret, Mona

2012-02-01

The general equation Tove = L cos θ ln(Rexp/R0 + 1) for the thickness measurement of thin oxide films by X-ray photoelectron spectroscopy (XPS) was applied to a HfO2/SiO2/Si(1 0 0) as a thin hetero-oxide film system with an interfacial oxide layer. The contribution of the thick interfacial SiO2 layer to the thickness of the HfO2 overlayer was counterbalanced by multiplying the ratio between the intensity of Si4+ from a thick SiO2 film and that of Si0 from a Si(1 0 0) substrate to the intensity of Si4+ from the HfO2/SiO2/Si(1 0 0) film. With this approximation, the thickness levels of the HfO2 overlayers showed a small standard deviation of 0.03 nm in a series of HfO2 (2 nm)/SiO2 (2-6 nm)/Si(1 0 0) films. Mutual calibration with XPS and transmission electron microscopy (TEM) was used to verify the thickness of HfO2 overlayers in a series of HfO2 (1-4 nm)/SiO2 (3 nm)/Si(1 0 0) films. From the linear relation between the thickness values derived from XPS and TEM, the effective attenuation length of the photoelectrons and the thickness of the HfO2 overlayer could be determined.

Controlling the Performance of P-type Cu2O/SnO Bilayer Thin-Film Transistors by Adjusting the Thickness of the Copper Oxide Layer

KAUST Repository

Al-Jawhari, Hala A.

2014-11-11

The effect of copper oxide layer thickness on the performance of Cu2O/SnO bilayer thin-film transistors was investigated. By using sputtered Cu2O films produced at an oxygen partial pressure, Opp, of 10% as the upper layer and 3% Opp SnO films as the lower layer we built a matrix of bottom-gate Cu2O/SnO bilayer thin-film transistors of different thickness. We found that the thickness of the Cu2O layer is of major importance in oxidation of the SnO layer underneath. The thicker the Cu2O layer, the more the underlying SnO layer is oxidized, and, hence, the more transistor mobility is enhanced at a specific temperature. Both device performance and the annealing temperature required could be adjusted by controlling the thickness of each layer of Cu2O/SnO bilayer thin-film transistors.

Decolorization of methylene blue in layered manganese oxide suspension with H2O2

International Nuclear Information System (INIS)

Zhang Lili; Nie Yulun; Hu Chun; Hu Xuexiang

2011-01-01

Highlights: → Layered birnessite-type manganese oxides exhibited a well-crystallized octahedral layer (OL) structure with β-MnOOH, α-MnOOH and γ-Mn 3 O 4 . → The catalyst was highly effective for the decolorization and degradation of methylene blue in the presence of H 2 O 2 at neutral pH. → The 1 O 2 and O 2 · - were the main reactive oxygen species in the reaction. - Abstract: Layered birnessite-type manganese oxides (Na-OL-1) were prepared via a redox reaction involving MnO 4 - and Mn 2+ under markedly alkaline conditions. According to the XRD analysis, the resulting material exhibited a well-crystallized octahedral layer (OL) structure with several different phases, including β-MnOOH, α-MnOOH and γ-Mn 3 O 4 . The catalyst was highly effective for the decolorization and degradation of methylene blue (MB) in the presence of H 2 O 2 at neutral pH. The tested MB was completely decolorized in Na-OL-1 suspension by the fraction dosing of H 2 O 2 (556.5 mM at the beginning and then 183.8 mM at 40 min). Based on the studies of electron spin resonance and the effect of radical scavengers, the 1 O 2 and O 2 · - were the main reactive oxygen species (ROS) in the reaction. It was found that both oxygen and ROS were generated from the decomposition of H 2 O 2 in Na-OL-1 suspension, wherein the decomposition pathways were proposed. The generation of H 2 O 2 in Na-OL-1 suspension at air atmosphere indicated that the existence of multivalent manganese oxides greatly enhanced the interfacial electron transfer, leading to the high activity of Na-OL-1.

Dry air effects on the copper oxides sensitive layers formation for ethanol vapor detection

International Nuclear Information System (INIS)

Labidi, A.; Bejaoui, A.; Ouali, H.; Akkari, F. Chaffar; Hajjaji, A.; Gaidi, M.; Kanzari, M.; Bessais, B.; Maaref, M.

2011-01-01

The copper oxide films have been deposited by thermal evaporation and annealed under ambient air and dry air respectively, at different temperatures. The structural characteristics of the films were investigated by X-ray diffraction. They showed the presences of two hydroxy-carbonate minerals of copper for annealing temperatures below 250 deg. C. Above this temperature the conductivity measurements during the annealing process, show a transition phase from metallic copper to copper oxides. The copper oxides sensitivity toward ethanol were performed using conductivity measurements at the working temperature of 200 deg. C. A decrease of conductivity was observed under ethanol vapor, showing the p-type semi-conducting characters of obtained copper oxide films. It was found that the sensing properties of copper oxide toward ethanol depend mainly on the annealing conditions. The best responses were obtained with copper layers annealed under dry air.

Dry air effects on the copper oxides sensitive layers formation for ethanol vapor detection

Energy Technology Data Exchange (ETDEWEB)

Labidi, A., E-mail: Ahmed_laabidi@yahoo.fr [URPSC (UR 99/13-18) Unite de Recherche de Physique des Semiconducteurs et Capteurs, IPEST, Universite de Carthage, BP 51, La Marsa 2070, Tunis (Tunisia); Bejaoui, A.; Ouali, H. [URPSC (UR 99/13-18) Unite de Recherche de Physique des Semiconducteurs et Capteurs, IPEST, Universite de Carthage, BP 51, La Marsa 2070, Tunis (Tunisia); Akkari, F. Chaffar [Laboratoire de Photovoltaique et Materiaux Semi-conducteurs, ENIT, Universite de Tunis el Manar, BP 37, Le belvedere 1002, Tunis (Tunisia); Hajjaji, A.; Gaidi, M. [Laboratoire de Photovoltaique, Centre de Recherches et de technologies de l' energie, Technopole de Borj-Cedria, BP 95, 2050 Hammam-Lif (Tunisia); Kanzari, M. [Laboratoire de Photovoltaique et Materiaux Semi-conducteurs, ENIT, Universite de Tunis el Manar, BP 37, Le belvedere 1002, Tunis (Tunisia); Bessais, B. [Laboratoire de Photovoltaique, Centre de Recherches et de technologies de l' energie, Technopole de Borj-Cedria, BP 95, 2050 Hammam-Lif (Tunisia); Maaref, M. [URPSC (UR 99/13-18) Unite de Recherche de Physique des Semiconducteurs et Capteurs, IPEST, Universite de Carthage, BP 51, La Marsa 2070, Tunis (Tunisia)

2011-09-15

The copper oxide films have been deposited by thermal evaporation and annealed under ambient air and dry air respectively, at different temperatures. The structural characteristics of the films were investigated by X-ray diffraction. They showed the presences of two hydroxy-carbonate minerals of copper for annealing temperatures below 250 deg. C. Above this temperature the conductivity measurements during the annealing process, show a transition phase from metallic copper to copper oxides. The copper oxides sensitivity toward ethanol were performed using conductivity measurements at the working temperature of 200 deg. C. A decrease of conductivity was observed under ethanol vapor, showing the p-type semi-conducting characters of obtained copper oxide films. It was found that the sensing properties of copper oxide toward ethanol depend mainly on the annealing conditions. The best responses were obtained with copper layers annealed under dry air.

Oxidation Characteristics and Electrical Properties of Doped Mn-Co Spinel Reaction Layer for Solid Oxide Fuel Cell Metal Interconnects

Directory of Open Access Journals (Sweden)

Pingyi Guo

2018-01-01

Full Text Available To prevent Cr poisoning of the cathode and to retain high conductivity during solid oxide fuel cell (SOFC operation, Cu or La doped Co-Mn coatings on a metallic interconnect is deposited and followed by oxidation at 750 °C. Microstructure and composition of coatings after preparation and oxidation is analyzed by X-ray diffraction (XRD and scanning electron microscopy (SEM. High energy micro arc alloying process, a low cost technique, is used to prepare Cu or La doped Co-Mn coatings with the metallurgical bond. When coatings oxidized at 750 °C in air for 20 h and 100 h, Co3O4 is the main oxide on the surface of Co-38Mn-2La and Co-40Mn coatings, and (Co,Mn3O4 spinel continues to grow with extended oxidation time. The outmost scales of Co-33Mn-17Cu are mainly composed of cubic MnCo2O4 spinel with Mn2O3 after oxidation for 20 h and 100 h. The average thickness of oxide coatings is about 60–70 μm after oxidation for 100 h, except that Co-40Mn oxide coatings are a little thicker. Area-specific resistance of Cu/La doped Co-Mn coatings are lower than that of Co-40Mn coating. (Mn,Co3O4/MnCo2O4 spinel layer is efficient at blocking the outward diffusion of chromium and iron.

Structural Investigation of Sodium Layered Oxides Via in Situ Synchrotron X-Ray Diffraction

DEFF Research Database (Denmark)

Jung, Young Hwa; Christiansen, Ane Sælland; Johnsen, Rune

2015-01-01

electrochemical reaction is generally considered to be a pivotal feature for understanding the relationship between layered structures and electrochemical properties. Here the structure, phase stability, and electrochemical properties of two kinds of layered oxides, P2 and O3, are investigated through in......-situ synchrotron XRD experiments. A capillary Na-based cell is designed to minimize interference in other substances such as a separator or external battery parts. This approach could give us to obtain clear diffraction patterns with high intensity during electrochemical reaction in a short period of time without...... further relaxation step. We carefully scrutinized reversible structural phase transformations during electrochemical reaction of P2 and O3-layered compounds based on in situ analysis, and detailed results will be discussed....

Thin film complementary metal oxide semiconductor (CMOS) device using a single-step deposition of the channel layer

KAUST Repository

Nayak, Pradipta K.

2014-04-14

We report, for the first time, the use of a single step deposition of semiconductor channel layer to simultaneously achieve both n-and p-type transport in transparent oxide thin film transistors (TFTs). This effect is achieved by controlling the concentration of hydroxyl groups (OH-groups) in the underlying gate dielectrics. The semiconducting tin oxide layer was deposited at room temperature, and the maximum device fabrication temperature was 350C. Both n and p-type TFTs showed fairly comparable performance. A functional CMOS inverter was fabricated using this novel scheme, indicating the potential use of our approach for various practical applications.

Actinide oxide photodiode and nuclear battery

Energy Technology Data Exchange (ETDEWEB)

Sykora, Milan; Usov, Igor

2017-12-05

Photodiodes and nuclear batteries may utilize actinide oxides, such a uranium oxide. An actinide oxide photodiode may include a first actinide oxide layer and a second actinide oxide layer deposited on the first actinide oxide layer. The first actinide oxide layer may be n-doped or p-doped. The second actinide oxide layer may be p-doped when the first actinide oxide layer is n-doped, and the second actinide oxide layer may be n-doped when the first actinide oxide layer is p-doped. The first actinide oxide layer and the second actinide oxide layer may form a p/n junction therebetween. Photodiodes including actinide oxides are better light absorbers, can be used in thinner films, and are more thermally stable than silicon, germanium, and gallium arsenide.

Enhancement in sensitivity of graphene-based zinc oxide assisted bimetallic surface plasmon resonance (SPR) biosensor

Science.gov (United States)

Kumar, Rajeev; Kushwaha, Angad S.; Srivastava, Monika; Mishra, H.; Srivastava, S. K.

2018-03-01

In the present communication, a highly sensitive surface plasmon resonance (SPR) biosensor with Kretschmann configuration having alternate layers, prism/zinc oxide/silver/gold/graphene/biomolecules (ss-DNA) is presented. The optimization of the proposed configuration has been accomplished by keeping the constant thickness of zinc oxide (32 nm), silver (32 nm), graphene (0.34 nm) layer and biomolecules (100 nm) for different values of gold layer thickness (1, 3 and 5 nm). The sensitivity of the proposed SPR biosensor has been demonstrated for a number of design parameters such as gold layer thickness, number of graphene layer, refractive index of biomolecules and the thickness of biomolecules layer. SPR biosensor with optimized geometry has greater sensitivity (66 deg/RIU) than the conventional (52 deg/RIU) as well as other graphene-based (53.2 deg/RIU) SPR biosensor. The effect of zinc oxide layer thickness on the sensitivity of SPR biosensor has also been analysed. From the analysis, it is found that the sensitivity increases significantly by increasing the thickness of zinc oxide layer. It means zinc oxide intermediate layer plays an important role to improve the sensitivity of the biosensor. The sensitivity of SPR biosensor also increases by increasing the number of graphene layer (upto nine layer).

Correction: One-step coelectrodeposition-assisted layer-by-layer assembly of gold nanoparticles and reduced graphene oxide and its self-healing three-dimensional nanohybrid for an ultrasensitive DNA sensor.

Science.gov (United States)

Jayakumar, Kumarasamy; Camarada, María Belén; Dharuman, Venkataraman; Ju, Huangxian; Dey, Ramendra Sundar; Wen, Yangping

2018-02-01

Correction for 'One-step coelectrodeposition-assisted layer-by-layer assembly of gold nanoparticles and reduced graphene oxide and its self-healing three-dimensional nanohybrid for an ultrasensitive DNA sensor' by Jayakumar Kumarasamy, et al., Nanoscale, 2018, DOI: 10.1039/c7nr06952a.

Oxide thickness measurement technique for duplex-layer Zircaloy-4 cladding

International Nuclear Information System (INIS)

McClelland, R.G.; O'Leary, P.M.

1992-01-01

Siemens Nuclear Power Corporation (SNP) is investigating the use of duplex-layer Zircaloy-4 tubing to improve the waterside corrosion resistance of cladding for high-burnup pressurized water reactor (PWR) fuel designs. Standard SNP PWR cladding is typically 0.762-mm (0.030-in.)-thick Zircaloy-4. The SNP duplex cladding is nominally 0.660-mm (0.026-in.)-thick Zircalloy-4 with an ∼0.102-mm (0.004-in.) outer layer of another, more corrosion-resistant, zirconium-based alloy. It is common industry practice to monitor the in-reactor corrosion behavior of Zircaloy cladding by using an eddy-current 'lift-off' technique to measure the oxide thickness on the outer surface of the fuel cladding. The test program evaluated three different cladding samples, all with the same outer diameter and wall thickness: Zircaloy-4 and duplex clad types D2 and D4

Heavy-ion induced current through an oxide layer

International Nuclear Information System (INIS)

Takahashi, Yoshihiro; Ohki, Takahiro; Nagasawa, Takaharu; Nakajima, Yasuhito; Kawanabe, Ryu; Ohnishi, Kazunori; Hirao, Toshio; Onoda, Shinobu; Mishima, Kenta; Kawano, Katsuyasu; Itoh, Hisayoshi

2007-01-01

In this paper, the heavy-ion induced current in MOS structure is investigated. We have measured the transient gate current in a MOS capacitor and a MOSFET induced by single heavy-ions, and found that a transient current can be observed when the semiconductor surface is under depletion condition. In the case of MOSFET, a transient gate current with both positive and negative peaks is observed if the ion hits the gate area, and that the total integrated charge is almost zero within 100-200 ns after irradiation. From these results, we conclude that the radiation-induced gate current is dominated by a displacement current. We also discuss the generation mechanism of the radiation-induced current through the oxide layer by device simulation

Efficient indium-tin-oxide free inverted organic solar cells based on aluminum-doped zinc oxide cathode and low-temperature aqueous solution processed zinc oxide electron extraction layer

International Nuclear Information System (INIS)

Chen, Dazheng; Zhang, Chunfu; Wang, Zhizhe; Zhang, Jincheng; Tang, Shi; Wei, Wei; Sun, Li; Hao, Yue

2014-01-01

Indium-tin-oxide (ITO) free inverted organic solar cells (IOSCs) based on aluminum-doped zinc oxide (AZO) cathode, low-temperature aqueous solution processed zinc oxide (ZnO) electron extraction layer, and poly(3-hexylthiophene-2, 5-diyl):[6, 6]-phenyl C 61 butyric acid methyl ester blend were realized in this work. The resulted IOSC with ZnO annealed at 150 °C shows the superior power conversion efficiency (PCE) of 3.01%, if decreasing the ZnO annealing temperature to 100 °C, the obtained IOSC also shows a PCE of 2.76%, and no light soaking issue is observed. It is found that this ZnO film not only acts as an effective buffer layer but also slightly improves the optical transmittance of AZO substrates. Further, despite the relatively inferior air-stability, these un-encapsulated AZO/ZnO IOSCs show comparable PCEs to the referenced ITO/ZnO IOSCs, which demonstrates that the AZO cathode is a potential alternative to ITO in IOSCs. Meanwhile, this simple ZnO process is compatible with large area deposition and plastic substrates, and is promising to be widely used in IOSCs and other relative fields.

Stability study of cermet-supported solid oxide fuel cells with bi-layered electrolyte

Energy Technology Data Exchange (ETDEWEB)

Zhang, Xinge; Gazzarri, Javier; Robertson, Mark; Deces-Petit, Cyrille [National Research Council, Institute for Fuel Cell Innovation, 4250 Wesbrook Mall, Vancouver, BC (Canada); Kesler, Olivera [Department of Mechanical and Industrial Engineering, University of Toronto, 5 King' s College Road, Toronto, ON (Canada)

2008-12-01

Performance and stability of five cermet-supported button-type solid oxide fuel cells featuring a bi-layered electrolyte (SSZ/SDC), an SSC cathode, and a Ni-SSZ anode, were analyzed using polarization curves, impedance spectroscopy, and post-mortem SEM observation. The cell performance degradation at 650 C in H{sub 2}/air both with and without DC bias conditions was manifested primarily as an increase in polarization resistance, approximately at a rate of 2.3 m{omega} cm{sup 2} h{sup -1} at OCV, suggesting a decrease in electrochemical kinetics as the main phenomenon responsible for the performance decay. In addition, the initial series resistance was about ten times higher than the calculated resistance corresponding to the electrolyte, reflecting a possible inter-reaction between the electrolyte layers that occurred during the sintering stage. In situ and ex situ sintered cathodes showed no obvious difference in cell performance or decay rate. The stability of the cells with and without electrical load was also investigated and no significant influence of DC bias was recorded. Based on the experimental results presented, we preliminarily attribute the performance degradation to electrochemical and microstructural degradation of the cathode. (author)

Stability study of cermet-supported solid oxide fuel cells with bi-layered electrolyte

Science.gov (United States)

Zhang, Xinge; Gazzarri, Javier; Robertson, Mark; Decès-Petit, Cyrille; Kesler, Olivera

Performance and stability of five cermet-supported button-type solid oxide fuel cells featuring a bi-layered electrolyte (SSZ/SDC), an SSC cathode, and a Ni-SSZ anode, were analyzed using polarization curves, impedance spectroscopy, and post-mortem SEM observation. The cell performance degradation at 650 °C in H 2/air both with and without DC bias conditions was manifested primarily as an increase in polarization resistance, approximately at a rate of 2.3 mΩ cm 2 h -1 at OCV, suggesting a decrease in electrochemical kinetics as the main phenomenon responsible for the performance decay. In addition, the initial series resistance was about ten times higher than the calculated resistance corresponding to the electrolyte, reflecting a possible inter-reaction between the electrolyte layers that occurred during the sintering stage. In situ and ex situ sintered cathodes showed no obvious difference in cell performance or decay rate. The stability of the cells with and without electrical load was also investigated and no significant influence of DC bias was recorded. Based on the experimental results presented, we preliminarily attribute the performance degradation to electrochemical and microstructural degradation of the cathode.

Impact of metal nano layer thickness on tunneling oxide and memory performance of core-shell iridium-oxide nanocrystals

Energy Technology Data Exchange (ETDEWEB)

Banerjee, W.; Maikap, S. [Thin Film Nano Tech. Lab., Department of Electronic Engineering, Chang Gung University, Tao-Yuan, Taiwan 333, Taiwan (China); Tien, T.-C. [Material Research Laboratories, Industrial Technology Research Institute, Hsinchu, Taiwan 310, Taiwan (China); Li, W.-C.; Yang, J.-R. [Department of Materials Science and Engineering, National Taiwan University, Taipei 106, Taiwan (China)

2011-10-01

The impact of iridium-oxide (IrO{sub x}) nano layer thickness on the tunneling oxide and memory performance of IrO{sub x} metal nanocrystals in an n-Si/SiO{sub 2}/Al{sub 2}O{sub 3}/IrO{sub x}/Al{sub 2}O{sub 3}/IrO{sub x} structure has been investigated. A thinner (1.5 nm) IrO{sub x} nano layer has shown better memory performance than that of a thicker one (2.5 nm). Core-shell IrO{sub x} nanocrystals with a small average diameter of 2.4 nm and a high density of {approx}2 x 10{sup 12}/cm{sup 2} have been observed by scanning transmission electron microscopy. The IrO{sub x} nanocrystals are confirmed by x-ray photoelectron spectroscopy. A large memory window of 3.0 V at a sweeping gate voltage of {+-}5 V and 7.2 V at a sweeping gate voltage of {+-} 8 V has been observed for the 1.5 nm-thick IrO{sub x} nano layer memory capacitors with a small equivalent oxide thickness of 8 nm. The electrons and holes are trapped in the core and annular regions of the IrO{sub x} nanocrystals, respectively, which is explained by Gibbs free energy. High electron and hole-trapping densities are found to be 1.5 x 10{sup 13}/cm{sup 2} and 2 x 10{sup 13}/cm{sup 2}, respectively, due to the small size and high-density of IrO{sub x} nanocrystals. Excellent program/erase endurance of >10{sup 6} cycles and good retention of 10{sup 4} s with a good memory window of >1.2 V under a small operation voltage of {+-} 5 V are obtained. A large memory size of >10 Tbit/sq. in. can be designed by using the IrO{sub x} nanocrystals. This study is not only important for the IrO{sub x} nanocrystal charge-trapping memory investigation but it will also help to design future metal nanocrystal flash memory.

Impact of metal nano layer thickness on tunneling oxide and memory performance of core-shell iridium-oxide nanocrystals

International Nuclear Information System (INIS)

Banerjee, W.; Maikap, S.; Tien, T.-C.; Li, W.-C.; Yang, J.-R.

2011-01-01

The impact of iridium-oxide (IrO x ) nano layer thickness on the tunneling oxide and memory performance of IrO x metal nanocrystals in an n-Si/SiO 2 /Al 2 O 3 /IrO x /Al 2 O 3 /IrO x structure has been investigated. A thinner (1.5 nm) IrO x nano layer has shown better memory performance than that of a thicker one (2.5 nm). Core-shell IrO x nanocrystals with a small average diameter of 2.4 nm and a high density of ∼2 x 10 12 /cm 2 have been observed by scanning transmission electron microscopy. The IrO x nanocrystals are confirmed by x-ray photoelectron spectroscopy. A large memory window of 3.0 V at a sweeping gate voltage of ±5 V and 7.2 V at a sweeping gate voltage of ± 8 V has been observed for the 1.5 nm-thick IrO x nano layer memory capacitors with a small equivalent oxide thickness of 8 nm. The electrons and holes are trapped in the core and annular regions of the IrO x nanocrystals, respectively, which is explained by Gibbs free energy. High electron and hole-trapping densities are found to be 1.5 x 10 13 /cm 2 and 2 x 10 13 /cm 2 , respectively, due to the small size and high-density of IrO x nanocrystals. Excellent program/erase endurance of >10 6 cycles and good retention of 10 4 s with a good memory window of >1.2 V under a small operation voltage of ± 5 V are obtained. A large memory size of >10 Tbit/sq. in. can be designed by using the IrO x nanocrystals. This study is not only important for the IrO x nanocrystal charge-trapping memory investigation but it will also help to design future metal nanocrystal flash memory.

Direct Probing of the Dielectric Scavenging-Layer Interface in Oxide Filamentary-Based Valence Change Memory.

Science.gov (United States)

Celano, Umberto; Op de Beeck, Jonathan; Clima, Sergiu; Luebben, Michael; Koenraad, Paul M; Goux, Ludovic; Valov, Ilia; Vandervorst, Wilfried

2017-03-29

A great improvement in valence change memory performance has been recently achieved by adding another metallic layer to the simple metal-insulator-metal (MIM) structure. This metal layer is often referred to as oxygen exchange layer (OEL) and is introduced between one of the electrodes and the oxide. The OEL is believed to induce a distributed reservoir of defects at the metal-insulator interface thus providing an unlimited availability of building blocks for the conductive filament (CF). However, its role remains elusive and controversial owing to the difficulties to probe the interface between the OEL and the CF. Here, using Scalpel SPM we probe multiple functions of the OEL which have not yet been directly measured, for two popular VCMs material systems: Hf/HfO 2 and Ta/Ta 2 O 5 . We locate and characterize in three-dimensions the volume containing the oxygen exchange layer and the CF with nanometer lateral resolution. We demonstrate that the OEL induces a thermodynamic barrier for the CF and estimate the minimum thickness of the OEL/oxide interface to guarantee the proper switching operations is ca. 3 nm. Our experimental observations are combined to first-principles thermodynamics and defect kinetics to elucidate the role of the OEL for device optimization.

The simulation of the temperature effects on the microhardness of anodic alumina oxide layers

Directory of Open Access Journals (Sweden)

M. Gombár

2014-01-01

Full Text Available In order to improve the mechanical properties of the layer deposited by anodic oxidation of aluminum on the material EN AW-1050 H24, in the contribution was investigated the microhardness of the deposited layer as a function of the physic-chemical factors affecting in the process of anodic oxidation at the constant anodic current density J = 3 A.dm-2 in electrolyte formed by sulfuric acid and oxalic acid, with the emphasis on the influence of electrolyte temperature in the range – 1,78 °C to 45,78 °C. The model of the studied dependence was compiled based on mathematical and statistical analysis of matrix from experimental obtained data from composite rotation plan of experiment with five independent variable factors (amount of sulfuric acid in the electrolyte, the amount of oxalic acid in the electrolyte, electrolyte, anodizing time and applied voltage.

Wire winding increases lifetime of oxide coated cathodes

Science.gov (United States)

Kerslake, W.; Vargo, D.

1965-01-01

Refractory-metal heater base wound with a thin refractory metal wire increases the longevity of oxide-coated cathodes. The wire-wound unit is impregnated with the required thickness of metal oxide. This cathode is useful in magnetohydrodynamic systems and in electron tubes.

Immobilization of bacterial S-layer proteins from Caulobacter crescentus on iron oxide-based nanocomposite: synthesis and spectroscopic characterization of zincite-coated Fe₂O₃ nanoparticles.

Science.gov (United States)

Habibi, Neda

2014-05-05

Zinc oxide was coated on Fe2O3 nanoparticles using sol-gel spin-coating. Caulobacter crescentus have a crystalline surface layer (S-layer), which consist of one protein or glycoprotein species. The immobilization of bacterial S-layers obtained from C. crescentus on zincite-coated nanoparticles of iron oxide was investigated. The SDS PAGE results of S-layers isolated from C. crescentus showed the weight of 50 KDa. Nanoparticles of the Fe2O3 and zinc oxide were synthesized by a sol-gel technique. Fe2O3 nanoparticles with an average size of 50 nm were successfully prepared by the proper deposition of zinc oxide onto iron oxide nanoparticles surface annealed at 450 °C. The samples were characterized by field-emission scanning electron microscope (FESEM), atomic force microscopy (AFM), powder X-ray diffraction (XRD) and Fourier-transform infrared spectroscopy (FT-IR). Copyright © 2014 Elsevier B.V. All rights reserved.

Structure and physical properties for a new layered pnictide-oxide: BaTi2As2O

International Nuclear Information System (INIS)

Wang, X F; Yan, Y J; Ying, J J; Li, Q J; Zhang, M; Xu, N; Chen, X H

2010-01-01

We have successfully synthesized a new layered pnictide-oxide: BaTi 2 As 2 O. It shares similar characteristics with Na 2 Ti 2 Sb 2 O. The crystal has a layered structure with a tetragonal P4/nmm group (a = 4.047(3) A, c = 7.275(4) A). The resistivity shows an anomaly at 200 K, which should be ascribed to an SDW or structural transition. The SDW or structural transition is confirmed by magnetic susceptibility and heat capacity measurements. These behaviors are very similar to those observed in parent compounds of high-T c iron-based pnictide superconductors, in which the superconductivity shows up when the anomaly due to the SDW or structural transition is suppressed. Therefore, the new layered pnictide-oxide, BaTi 2 As 2 O, could be a potential parent compound for superconductivity. It is found that Li + doping significantly suppresses the anomaly, but no superconductivity emerges so far.

Inductive crystal field control in layered metal oxides with correlated electrons

International Nuclear Information System (INIS)

Balachandran, P. V.; Cammarata, A.; Rondinelli, J. M.; Nelson-Cheeseman, B. B.; Bhattacharya, A.

2014-01-01

We show that the NiO 6 crystal field energies can be tailored indirectly via heterovalent A cation ordering in layered (La,A)NiO 4 Ruddlesden–Popper (RP) oxides, where A = Sr, Ca, or Ba, using density functional calculations. We leverage as a driving force the electrostatic interactions between charged [LaO] 1+ and neutral [AO] 0 planes to inductively tune the Ni–O bond distortions, without intentional doping or epitaxial strain, altering the correlated d-orbital energies. We use this strategy to design cation ordered LaCaNiO 4 and LaBaNiO 4 with distortions favoring enhanced Ni e g orbital polarization, and find local electronic structure signatures analogous to those in RP La-cuprates, i.e., parent phases of the high-temperature superconducting oxides

Atomic scale imaging of competing polar states in a Ruddlesden–Popper layered oxide

Science.gov (United States)

Stone, Greg; Ophus, Colin; Birol, Turan; Ciston, Jim; Lee, Che-Hui; Wang, Ke; Fennie, Craig J.; Schlom, Darrell G.; Alem, Nasim; Gopalan, Venkatraman

2016-01-01

Layered complex oxides offer an unusually rich materials platform for emergent phenomena through many built-in design knobs such as varied topologies, chemical ordering schemes and geometric tuning of the structure. A multitude of polar phases are predicted to compete in Ruddlesden–Popper (RP), An+1BnO3n+1, thin films by tuning layer dimension (n) and strain; however, direct atomic-scale evidence for such competing states is currently absent. Using aberration-corrected scanning transmission electron microscopy with sub-Ångstrom resolution in Srn+1TinO3n+1 thin films, we demonstrate the coexistence of antiferroelectric, ferroelectric and new ordered and low-symmetry phases. We also directly image the atomic rumpling of the rock salt layer, a critical feature in RP structures that is responsible for the competing phases; exceptional quantitative agreement between electron microscopy and density functional theory is demonstrated. The study shows that layered topologies can enable multifunctionality through highly competitive phases exhibiting diverse phenomena in a single structure. PMID:27578622

Atomic scale imaging of competing polar states in a Ruddlesden-Popper layered oxide.

Science.gov (United States)

Stone, Greg; Ophus, Colin; Birol, Turan; Ciston, Jim; Lee, Che-Hui; Wang, Ke; Fennie, Craig J; Schlom, Darrell G; Alem, Nasim; Gopalan, Venkatraman

2016-08-31

Layered complex oxides offer an unusually rich materials platform for emergent phenomena through many built-in design knobs such as varied topologies, chemical ordering schemes and geometric tuning of the structure. A multitude of polar phases are predicted to compete in Ruddlesden-Popper (RP), An+1BnO3n+1, thin films by tuning layer dimension (n) and strain; however, direct atomic-scale evidence for such competing states is currently absent. Using aberration-corrected scanning transmission electron microscopy with sub-Ångstrom resolution in Srn+1TinO3n+1 thin films, we demonstrate the coexistence of antiferroelectric, ferroelectric and new ordered and low-symmetry phases. We also directly image the atomic rumpling of the rock salt layer, a critical feature in RP structures that is responsible for the competing phases; exceptional quantitative agreement between electron microscopy and density functional theory is demonstrated. The study shows that layered topologies can enable multifunctionality through highly competitive phases exhibiting diverse phenomena in a single structure.

Phase inversion and frequency doubling of reflection high-energy electron diffraction intensity oscillations in the layer-by-layer growth of complex oxides

Science.gov (United States)

Mao, Zhangwen; Guo, Wei; Ji, Dianxiang; Zhang, Tianwei; Gu, Chenyi; Tang, Chao; Gu, Zhengbin; Nie*, Yuefeng; Pan, Xiaoqing

In situ reflection high-energy electron diffraction (RHEED) and its intensity oscillations are extremely important for the growth of epitaxial thin films with atomic precision. The RHEED intensity oscillations of complex oxides are, however, rather complicated and a general model is still lacking. Here, we report the unusual phase inversion and frequency doubling of RHEED intensity oscillations observed in the layer-by-layer growth of SrTiO3 using oxide molecular beam epitaxy. In contacts to the common understanding that the maximum(minimum) intensity occurs at SrO(TiO2) termination, respectively, we found that both maximum or minimum intensities can occur at SrO, TiO2, or even incomplete terminations depending on the incident angle of the electron beam, which raises a fundamental question if one can rely on the RHEED intensity oscillations to precisely control the growth of thin films. A general model including surface roughness and termination dependent mean inner potential qualitatively explains the observed phenomena, and provides the answer to the question how to prepare atomically and chemically precise surface/interfaces using RHEED oscillations for complex oxides. We thank National Basic Research Program of China (No. 11574135, 2015CB654901) and the National Thousand-Young-Talents Program.

Solid oxide fuel cell bi-layer anode with gadolinia-doped ceria for utilization of solid carbon fuel

Energy Technology Data Exchange (ETDEWEB)

Kellogg, Isaiah D. [Department of Mechanical and Aerospace Engineering, Missouri University of Science and Technology, 290A Toomey Hall, 400 West 13th Street, Rolla, MO 65409 (United States); Department of Materials Science and Engineering, Missouri University of Science and Technology, 223 McNutt Hall, 1400 N. Bishop, Rolla, MO 65409 (United States); Koylu, Umit O. [Department of Mechanical and Aerospace Engineering, Missouri University of Science and Technology, 290A Toomey Hall, 400 West 13th Street, Rolla, MO 65409 (United States); Dogan, Fatih [Department of Materials Science and Engineering, Missouri University of Science and Technology, 223 McNutt Hall, 1400 N. Bishop, Rolla, MO 65409 (United States)

2010-11-01

Pyrolytic carbon was used as fuel in a solid oxide fuel cell (SOFC) with a yttria-stabilized zirconia (YSZ) electrolyte and a bi-layer anode composed of nickel oxide gadolinia-doped ceria (NiO-GDC) and NiO-YSZ. The common problems of bulk shrinkage and emergent porosity in the YSZ layer adjacent to the GDC/YSZ interface were avoided by using an interlayer of porous NiO-YSZ as a buffer anode layer between the electrolyte and the NiO-GDC primary anode. Cells were fabricated from commercially available component powders so that unconventional production methods suggested in the literature were avoided, that is, the necessity of glycine-nitrate combustion synthesis, specialty multicomponent oxide powders, sputtering, or chemical vapor deposition. The easily-fabricated cell was successfully utilized with hydrogen and propane fuels as well as carbon deposited on the anode during the cyclic operation with the propane. A cell of similar construction could be used in the exhaust stream of a diesel engine to capture and utilize soot for secondary power generation and decreased particulate pollution without the need for filter regeneration. (author)

Novel Dry-Type Glucose Sensor Based on a Metal-Oxide-Semiconductor Capacitor Structure with Horseradish Peroxidase + Glucose Oxidase Catalyzing Layer

Science.gov (United States)

Lin, Jing-Jenn; Wu, You-Lin; Hsu, Po-Yen

2007-10-01

In this paper, we present a novel dry-type glucose sensor based on a metal-oxide-semiconductor capacitor (MOSC) structure using SiO2 as a gate dielectric in conjunction with a horseradish peroxidase (HRP) + glucose oxidase (GOD) catalyzing layer. The tested glucose solution was dropped directly onto the window opened on the SiO2 layer, with a coating of HRP + GOD catalyzing layer on top of the gate dielectric. From the capacitance-voltage (C-V) characteristics of the sensor, we found that the glucose solution can induce an inversion layer on the silicon surface causing a gate leakage current flowing along the SiO2 surface. The gate current changes Δ I before and after the drop of glucose solution exhibits a near-linear relationship with increasing glucose concentration. The Δ I sensitivity is about 1.76 nA cm-2 M-1, and the current is quite stable 20 min after the drop of the glucose solution is tested.

Ni/Ni-YSZ current collector/anode dual layer hollow fibers for micro-tubular solid oxide fuel cells

Energy Technology Data Exchange (ETDEWEB)

Kanawka, K.; Othman, M.H.D.; Droushiotis, N.; Wu, Z.; Kelsall, G.; Li, K. [Department of Chemical Engineering and Chemical Technology, Imperial College London, London SW7 2AZ (United Kingdom)

2011-10-15

A co-extrusion technique was employed to fabricate a novel dual layer NiO/NiO-YSZ hollow fiber (HF) precursor which was then co-sintered at 1,400 C and reduced at 700 C to form, respectively, a meshed porous inner Ni current collector and outer Ni-YSZ anode layers for SOFC applications. The inner thin and highly porous ''mesh-like'' pure Ni layer of approximately 50 {mu}m in thickness functions as a current collector in micro-tubular solid oxide fuel cell (SOFC), aiming at highly efficient current collection with low fuel diffusion resistance, while the thicker outer Ni-YSZ layer of 260 {mu}m acts as an anode, providing also major mechanical strength to the dual-layer HF. Achieved morphology consisted of short finger-like voids originating from the inner lumen of the HF, and a sponge-like structure filling most of the Ni-YSZ anode layer, which is considered to be suitable macrostructure for anode SOFC system. The electrical conductivity of the meshed porous inner Ni layer is measured to be 77.5 x 10{sup 5} S m{sup -1}. This result is significantly higher than previous reported results on single layer Ni-YSZ HFs, which performs not only as a catalyst for the oxidation reaction, but also as a current collector. These results highlight the advantages of this novel dual-layer HF design as a new and highly efficient way of collecting current from the lumen of micro-tubular SOFC. (Copyright copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

The effect of oxidation on physical properties of porous silicon layers for optical applications

Energy Technology Data Exchange (ETDEWEB)

Pirasteh, Parasteh [Laboratoire d' Optronique, CNRS-UMR FOTON 6082, Universite de Rennes 1, ENSSAT Tecnhopole Anticipa, 6 rue de Kerampont, BP 447, 22305 Lannion Cedex (France); Charrier, Joel [Laboratoire d' Optronique, CNRS-UMR FOTON 6082, Universite de Rennes 1, ENSSAT Tecnhopole Anticipa, 6 rue de Kerampont, BP 447, 22305 Lannion Cedex (France)]. E-mail: joel.charrier@univ-rennes1.fr; Soltani, Ali [Institut d' Electronique, de Microemectronique et de Nanotechnologie, CNRS-UMR 8520, Cite Scientifique Avenue Poincare, BP 69, 59652 Villeneuve d' Ascq Cedex (France); Haesaert, Severine [Laboratoire d' Optronique, CNRS-UMR FOTON 6082, Universite de Rennes 1, ENSSAT Tecnhopole Anticipa, 6 rue de Kerampont, BP 447, 22305 Lannion Cedex (France); Haji, Lazhar [Laboratoire d' Optronique, CNRS-UMR FOTON 6082, Universite de Rennes 1, ENSSAT Tecnhopole Anticipa, 6 rue de Kerampont, BP 447, 22305 Lannion Cedex (France); Godon, Christine [Laboratoire de Physique Crystalline, Institut des Materiaux Jean Rouxel, 44322 Nantes Cedex 3 (France); Errien, Nicolas [Laboratoire de Physique Crystalline, Institut des Materiaux Jean Rouxel, 44322 Nantes Cedex 3 (France)

2006-12-15

In order to understand the optical loss mechanisms in porous silicon based waveguides, structural and optical studies have been performed. Scanning and transmission electron microscopic observations of porous silicon layers are obtained before and after an oxidation process at high temperature in wet O{sub 2}. Pore size and shape of heavily p-type doped Si wafers are estimated and correlated to the optical properties of the material before and after oxidation. The refractive index was measured and compared to that determined by the Bruggeman model.

Structural analysis and characterization of layer perovskite oxynitrides made from Dion-Jacobson oxide precursors

International Nuclear Information System (INIS)

Schottenfeld, Joshua A.; Benesi, Alan J.; Stephens, Peter W.; Chen, Gugang; Eklund, Peter C.; Mallouk, Thomas E.

2005-01-01

A three-layer oxynitride Ruddlesden-Popper phase Rb 1+x Ca 2 Nb 3 O 10-x N x .yH 2 O (x=0.7-0.8, y=0.4-0.6) was synthesized by ammonialysis at 800 o C from the Dion-Jacobson phase RbCa 2 Nb 3 O 10 in the presence of Rb 2 CO 3 . Incorporation of nitrogen into the layer perovskite structure was confirmed by XPS, combustion analysis, and MAS NMR. The water content was determined by thermal gravimetric analysis and the rubidium content by ICP-MS. A similar layered perovskite interconversion occurred in the two-layer Dion-Jacobson oxide RbLaNb 2 O 7 to yield Rb 1+x LaNb 2 O 7-x N x .yH 2 O (x=0.7-0.8, y=0.5-1.0). Both compounds were air- and moisture-sensitive, with rapid loss of nitrogen by oxidation and hydrolysis reactions. The structure of the three-layer oxynitride Rb 1.7 Ca 2 Nb 3 O 9.3 N 0.7 .0.5H 2 O was solved in space group P4/mmm with a=3.887(3) and c=18.65(1)A, by Rietveld refinement of X-ray powder diffraction data. The two-layer oxynitride structure Rb 1.8 LaNb 2 O 6.3 N 0.7 .1.0H 2 O was also determined in space group P4/mmm with a=3.934(2) and c=14.697(2)A. GSAS refinement of synchrotron X-ray powder diffraction data showed that the water molecules were intercalated between a double layer of Rb+ ions in both the two- and three-layer Ruddlesden-Popper structures. Optical band gaps were measured by diffuse reflectance UV-vis for both materials. An indirect band gap of 2.51eV and a direct band gap of 2.99eV were found for the three-layer compound, while an indirect band gap of 2.29eV and a direct band gap of 2.84eV were measured for the two-layer compound. Photocatalytic activity tests of the three-layer compound under 380nm pass filtered light with AgNO 3 as a sacrificial electron acceptor gave a quantum yield of 0.025% for oxygen evolution

Effect of nano-oxide layers on giant magnetoresistance in pseudo-spin-valves using Co2FeAl electrodes

International Nuclear Information System (INIS)

Zhang, D.L.; Xu, X.G.; Wu, Y.; Miao, J.; Jiang, Y.

2011-01-01

We studied the pseudo-spin-valves (PSVs) with a structure of Ta/Co 2 FeAl/NOL 1 /Co 2 FeAl/Cu/Co 2 FeAl/NOL 2 /Ta, where NOL represents the nano-oxide layer. Compared with the normal Co 2 FeAl (CFA) PSV with a structure of Ta/Co 2 FeAl/Cu/Co 2 FeAl/Ta, which shows only a current-in-plane (CIP) giant magnetoresistance (GMR) of 0.03%, the CFA PSV with NOLs shows a large CIP-GMR of 5.84%. The enhanced GMR by the NOLs inserted in the CFA PSV is due to the large specular reflection caused by [(CoO)(Fe 2 O 3 )(Al 2 O 3 )] in NOL 1 and [(Fe 2 O 3 )(Al 2 O 3 )(Ta 2 O 5 )] in NOL 2 . Another reason is that the roughness of the interface between Ta and CFA is improved by the oxidation procedure. - Research highlights: → Nano-oxide layers are applied in the pseudo-spin-valves with the Heusler alloy. → The CIP-GMR of pseudo-spin-valves is improved from 0.03% to 5.84%. → The GMR ratio is decided by the position of nano-oxide layers.

Oxidation of cyclohexanol on phosphotungstic acid anion intercalated layered double hydroxides with aqueous H{sub 2}O{sub 2} as oxidant

Energy Technology Data Exchange (ETDEWEB)

Bai, Xueli; Xue, Dandan; Sun, Huiyan; Huang, Xin; Zhao, Yongxiang; Zhang, Yue, E-mail: zyue@sxu.edu.cn [School of Chemical Engineering, Shanxi University, Shanxi (China); Bai, Zhaoyang [Shanxi Agricultural University, Shanxi (China)

2018-01-15

The layered double hydroxides (LDH) of Mg{sub 2}AlNi and Mg{sub 3}Al pillared by Keggin-type phosphotungstic acid anion (POM), i.e. Mg{sub 2}AlNi-POM LDH and Mg{sub 3}Al-POM LDH were synthesized by an ion-exchange method. The synthesized POM intercalated LDH compounds were characterized using various techniques such as FTIR, XRD, TGA and BET. The observed results show that the obtained catalysts retain the layer structure of LDH. Compared with the binary Mg{sub 3}Al-POM LDH, the ternary Mg{sub 2}AlNi-POM LDH catalyst indicated a higher thermal and chemical stability. The catalytic activity of the resulting LDH-POM was also assessed in the green oxidation of cyclohexanol with aqueous H{sub 2}O{sub 2} as an oxidant. The Mg{sub 2}AlNi-POM LDH showed a much higher conversion and selectivity for cyclohexanone than the corresponding Mg{sub 3}Al-POM LDH catalyst. (author)

Characterization of hafnium oxide resistive memory layers deposited on copper by atomic layer deposition

Energy Technology Data Exchange (ETDEWEB)

Briggs, B.D.; Bishop, S.M. [SUNY College of Nanoscale Science and Engineering, 255 Fuller Road, Albany, NY 12203 (United States); Leedy, K.D. [Air Force Research Laboratory, 2241 Avionics Circle, Wright Patterson Air Force Base, Dayton, OH 45433 (United States); Cady, N.C., E-mail: ncady@albany.edu [SUNY College of Nanoscale Science and Engineering, 255 Fuller Road, Albany, NY 12203 (United States)

2014-07-01

Hafnium oxide-based resistive memory devices have been fabricated on copper bottom electrodes. The HfO{sub x} active layers in these devices were deposited by atomic layer deposition (ALD) at 250 °C with tetrakis(dimethylamido)hafnium(IV) as the metal precursor and an O{sub 2} plasma as the reactant. Depth profiles of the HfO{sub x} by X-ray photoelectron spectroscopy and secondary ion mass spectroscopy revealed a copper concentration on the order of five atomic percent throughout the HfO{sub x} film. In addition to the Cu doped HfO{sub x}, a thin layer (20 nm) of Cu{sub x}O is present at the surface. This surface layer is believed to have formed during the ALD process, and greatly complicates the analysis of the switching mechanism. The resistive memory structures fabricated from the ALD HfO{sub x} exhibited non-polar resistive switching, independent of the top metal electrode (Ni, Pt, Al, Au). Resistive switching current voltage (I–V) curves were analyzed using Schottky emission and ionic hopping models to gain insight into the physical mechanisms underpinning the device behavior. During the forming process it was determined that, at voltages in excess of 2.5 V, an ionic hopping model is in good agreement with the I–V data. The extracted ion hopping distance ∼ 4 Å was within the range of interatomic spacing of HfO{sub 2} during the forming process consistent with ionic motion of Cu{sup 2+} ions. Lastly the on state I–V data was dominated at larger voltages by Schottky emission with an estimated barrier height of ∼ 0.5 eV and a refractive index of 2.59. The consequence of the Schottky emission analysis indicates the on state resistance to be a product of a Pt/Cu{sub 2}O/Cu filament(s)/Cu{sub 2}O/Cu structure. - Highlights: • HfO{sub 2} was grown via atomic layer deposition at 250 and 100 °C on Cu substrates. • A Cu{sub 2}O surface layer and Cu doping were observed in post-deposition of HfO{sub 2}. • Resistive memory devices were fabricated and

QSAR analysis for nano-sized layered manganese-calcium oxide in water oxidation: An application of chemometric methods in artificial photosynthesis.

Science.gov (United States)

Shahbazy, Mohammad; Kompany-Zareh, Mohsen; Najafpour, Mohammad Mahdi

2015-11-01

Water oxidation is among the most important reactions in artificial photosynthesis, and nano-sized layered manganese-calcium oxides are efficient catalysts toward this reaction. Herein, a quantitative structure-activity relationship (QSAR) model was constructed to predict the catalytic activities of twenty manganese-calcium oxides toward water oxidation using multiple linear regression (MLR) and genetic algorithm (GA) for multivariate calibration and feature selection, respectively. Although there are eight controlled parameters during synthesizing of the desired catalysts including ripening time, temperature, manganese content, calcium content, potassium content, the ratio of calcium:manganese, the average manganese oxidation state and the surface of catalyst, by using GA only three of them (potassium content, the ratio of calcium:manganese and the average manganese oxidation state) were selected as the most effective parameters on catalytic activities of these compounds. The model's accuracy criteria such as R(2)test and Q(2)test in order to predict catalytic rate for external test set experiments; were equal to 0.941 and 0.906, respectively. Therefore, model reveals acceptable capability to anticipate the catalytic activity. Copyright © 2015 Elsevier B.V. All rights reserved.