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Sample records for oxide ito gate

  1. Process development of ITO source/drain electrode for the top-gate indium-gallium-zinc oxide transparent thin-film transistor

    International Nuclear Information System (INIS)

    Cheong, Woo-Seok; Yoon, Young-sun; Shin, Jae-Heon; Hwang, Chi-Sun; Chu, Hye Yong

    2009-01-01

    Indium-tin oxide (ITO) has been widely used as electrodes for LCDs and OLEDs. The applications are expanding to the transparent thin-film transistors (TTFT S ) for the versatile circuits or transparent displays. This paper is related with optimization of ITO source and drain electrode for TTFTs on glass substrates. For example, un-etched ITO remnants, which frequently found in the wet etching process, often originate from unsuitable ITO formation processes. In order to improve them, an ion beam deposition method is introduced, which uses for forming a seed layer before the main ITO deposition. We confirm that ITO films with seed layers are effective to obtain clean and smooth glass surfaces without un-etched ITO remnants, resulting in a good long-run electrical stability of the top-gate indium-gallium-zinc oxide-TTFT.

  2. Characteristics of indium-tin-oxide (ITO) nanoparticle ink-coated layers recycled from ITO scraps

    Science.gov (United States)

    Cha, Seung-Jae; Hong, Sung-Jei; Lee, Jae Yong

    2015-09-01

    This study investigates the characteristics of an indium-tin-oxide (ITO) ink layer that includes nanoparticles synthesized from ITO target scraps. The particle size of the ITO nanoparticle was less than 15 nm, and the crystal structure was cubic with a (222) preferred orientation. Also, the composition ratio of In to Sn was 92.7 to 7.3 in weight. The ITO nanoparticles were well dispersed in the ink solvent to formulate a 20-wt% ITO nanoparticle ink. Furthermore, the ITO nanoparticle ink was coated onto a glass substrate, followed by heat-treatment at 600 °C. The layer showed good sheet resistances below 400 Ω/□ and optical transmittances higher than 88% at 550 nm. Thus, we can conclude that the characteristics of the layer make it highly applicable to a transparent conductive electrode.

  3. Porous screen printed indium tin oxide (ITO) for NOx gas sensing

    International Nuclear Information System (INIS)

    Mbarek, H.; Saadoun, M.; Bessais, B.

    2007-01-01

    Tin-doped Indium Oxide (ITO) films were prepared by the screen printing method. Transparent and conductive ITO thin films were obtained from an organometallic based paste fired in an Infrared furnace. The Screen printed ITO films were found to be granular and porous. This specific morphology was found to be suitable for sensing different gaseous species. This work investigates the possibility of using screen printed (ITO) films as a specific material for efficient NO x gas sensing. It was found that screen printed ITO is highly sensitive and stable towards NO x , especially for gas concentration higher than 50 ppm and starting from a substrate working temperature of about 180 C. The sensitivity of the ITO films increases with increasing NO x concentration and temperature. The sensitivity and stability of the screen printed ITO based sensors were studied within time. The ITO crystallite grain size dimension was found to be a key parameter that influences the gas response characteristics. Maximum gas sensitivity and minimum response time were observed for ITO films having lower crystallite size dimensions. (copyright 2007 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  4. Inkjet-printing of indium tin oxide (ITO) films for transparent conducting electrodes

    International Nuclear Information System (INIS)

    Hwang, Myun-sung; Jeong, Bong-yong; Moon, Jooho; Chun, Sang-Ki; Kim, Jihoon

    2011-01-01

    Highlights: → Inkjet printing of ITO films. → Ag-grid was inkjet-printed in between two ITO layers in order to improve the electrical property. → Ag-grid inserted ITO films with 2 mm Ag-grid pitch showed the sheet resistance less than 3.4 Ω/sq and the transmittance higher than 82%. - Abstract: Indium-tin-oxide (ITO) films have been prepared by inkjet-printing using ITO nanoparticle inks. The electrical and optical properties of the ITO films were investigated in order to understand the effects of annealing temperatures under microwave. The decrease in the sheet resistance and resistivity of the inkjet-printed ITO films was observed as the annealing temperature increases. The film annealed at 400 deg. C showed the sheet resistance of 517 Ω/sq with the film thickness of ∼580 nm. The optical transmittance of the films remained constant regardless of their annealing temperatures. In order to further reduce the sheet resistance of the films, Ag-grid was printed in between two layers of inkjet-printed ITO. With 3 mm Ag-grid line-to-line pitch, the Ag-grid inserted ITO film has the sheet resistance of 3.4 Ω/sq and the transmittance of 84% after annealing at 200 deg. C under microwave.

  5. Screen-printed Tin-doped indium oxide (ITO) films for NH3 gas sensing

    International Nuclear Information System (INIS)

    Mbarek, Hedia; Saadoun, Moncef; Bessais, Brahim

    2006-01-01

    Gas sensors using metal oxides have several advantageous features such as simplicity in device structure and low cost fabrication. In this work, Tin-doped indium oxide (ITO) films were prepared by the screen printing technique onto glass substrates. The granular and porous structure of screen-printed ITO are suitable for its use in gas sensing devices. The resistance of the ITO films was found to be strongly dependent on working temperatures and the nature and concentration of the ambient gases. We show that screen-printed ITO films have good sensing properties toward NH 3 vapours. The observed behaviors are explained basing on the oxidizing or the reducer nature of the gaseous species that react on the surface of the heated semi-conducting oxide

  6. Fabrication of indium tin oxide (ITO) thin film with pre-treated sol coating

    International Nuclear Information System (INIS)

    Hong, Sung-Jei; Han, Jeong-In

    2004-01-01

    A new pre-treated sol-coating method to fabricate an indium tin oxide (ITO) thin film is introduced in this paper. The pre-treatment sol-coating method is to form a seed layer on the substrate before spin coating of ITO sol. The pre-treatment was carried out at room temperature in order not to damage the substrate during the pre-treatment. It is effective to enhance the formation of the ITO sol film on the substrate, owing to the seed layer. The seed layer consists of ultrafine grains, which are observed at the pre-treated substrate. For the optimal pre-treatment condition, we used pre-treatment times of 24, 48, 72, and 96 hours to observe the effect on the characteristics of ITO sol film. As a result, the lowest resistance could be achieved with a pre-treatment time of 72 hours. The optical transmittance of the ITO sol film with the pre-treatment time of 72 hours exceeded 80 % at a wavelength of 400 nm. So, an ITO sol film with good electrical and optical properties could be fabricated by using the pretreatment sol coating.

  7. Application of argon atmospheric cold plasma for indium tin oxide (ITO) based diodes

    Science.gov (United States)

    Akbari Nia, S.; Jalili, Y. Seyed; Salar Elahi, A.

    2017-09-01

    Transparent Conductive Oxide (TCO) layers due to transparency, high conductivity and hole injection capability have attracted a lot of attention. One of these layers is Indium Tin Oxide (ITO). ITO due to low resistance, transparency in the visible spectrum and its proper work function is widely used in the manufacture of organic light emitting diodes and solar cells. One way for improving the ITO surface is plasma treatment. In this paper, changes in surface morphology, by applying argon atmospheric pressure cold plasma, was studied through Atomic Force Microscopic (AFM) image analysis and Fourier Transform Infrared Spectroscopy (FTIR) analysis. FTIR analysis showed functional groups were not added or removed, but chemical bond angle and bonds strength on the surface were changed and also AFM images showed that surface roughness was increased. These factors lead to the production of diodes with enhanced Ohmic contact and injection mechanism which are more appropriate in industrial applications.

  8. Characterization of lead zirconate titanate (PZT)--indium tin oxide (ITO) thin film interface

    International Nuclear Information System (INIS)

    Sreenivas, K.; Sayer, M.; Laursen, T.; Whitton, J.L.; Pascual, R.; Johnson, D.J.; Amm, D.T.

    1990-01-01

    In this paper the interface between ultrathin sputtered lead zirconate titanate (PZT) films and a conductive electrode (indium tin oxide-ITO) is investigated. Structural and compositional changes at the PZT-ITO interface have been examined by surface analysis and depth profiling techniques of glancing angle x-ray diffraction, Rutherford backscattering (RBS), SIMS, Auger electron spectroscopy (AES), and elastic recoil detection analysis (ERDA). Studies indicate significant interdiffusion of lead into the underlying ITP layer and glass substrate with a large amount of residual stress at the interface. Influence of such compositional deviations at the interface is correlated to an observed thickness dependence in the dielectric properties of PZT films

  9. Electro-Mechanical Coupling of Indium Tin Oxide Coated Polyethylene Terephthalate ITO/PET for Flexible Solar Cells

    KAUST Repository

    Saleh, Mohamed A.

    2013-05-15

    Indium tin oxide (ITO) is the most widely used transparent electrode in flexible solar cells because of its high transparency and conductivity. But still, cracking of ITO on PET substrates due to tensile loading is not fully understood and it affects the functionality of the solar cell tremendously as ITO loses its conductivity. Here, we investigate the cracking evolution in ITO/PET exposed to two categories of tests. Monotonous tensile testing is done in order to trace the crack propagation in ITO coating as well as determining a loading range to focus on during our study. Five cycles test is also conducted to check the crack closure effect on the resistance variation of ITO. Analytical model for the damage in ITO layer is implemented using the homogenization concept as in laminated composites for transverse cracking. The homogenization technique is done twice on COMSOL to determine the mechanical and electrical degradation of ITO due to applied loading. Finally, this damage evolution is used for a simulation to predict the degradation of ITO as function in the applied load and correlate this degradation with the resistance variation. Experimental results showed that during unloading, crack closure results in recovery of conductivity and decrease in the overall resistance of the cracked ITO. Also, statistics about the crack spacing showed that the cracking pattern is not perfectly periodical however it has a positively skewed distribution. The higher the applied load, the less the discrepancy in the crack spacing data. It was found that the cracking mechanism of ITO starts with transverse cracking with local delamination at the crack tip unlike the mechanism proposed in the literature of having only cracking pattern without any local delamination. This is the actual mechanism that leads to the high increase in ITO resistance. The analytical code simulates the damage evolution in the ITO layer as function in the applied strain. This will be extended further to

  10. Heterojunction photodetector based on graphene oxide sandwiched between ITO and p-Si

    Science.gov (United States)

    Ahmad, H.; Tajdidzadeh, M.; Thandavan, T. M. K.

    2018-02-01

    The drop casting method is utilized on indium tin oxide (ITO)-coated glass in order to prepare a sandwiched ITO/graphene oxide (ITO/GO) with silicon dioxide/p-type silicon (SiO2/p-Si) heterojunction photodetector. The partially sandwiched GO layer with SiO2/p-Si substrate exhibits dual characteristics as it showed good sensitivity towards the illumination of infrared (IR) laser at wavelength of 974 nm. Excellent photoconduction is also observed for current-voltage (I-V) characteristics at various laser powers. An external quantum efficiency greater than 1 for a direct current bias voltage of 0 and 3 V reveals significant photoresponsivity of the photodetector at various laser frequency modulation at 1, 5 and 9 Hz. The rise times are found to be 75, 72 and 70 μs for 1, 5 and 9 Hz while high fall times 455, 448 and 426 are measured for the respective frequency modulation. The fabricated ITO/GO-SiO2/p-Si sandwiched heterojunction photodetector can be considered as a good candidate for applications in the IR regions that do not require a high-speed response.

  11. Mediatorless bioelectrocatalysis of dioxygen reduction at indium-doped tin oxide (ITO) and ITO nanoparticulate film electrodes

    International Nuclear Information System (INIS)

    Rozniecka, Ewa; Jonsson-Niedziolka, Martin; Sobczak, Janusz W.; Opallo, Marcin

    2011-01-01

    Highlights: → We introduced ITO nanoparticulate films for enzyme immobilization. → The material promotes mediatorless bioelectrocatalysis towards dioxygen reduction. → The electrocatalytical current increase with the thickness of nanoparticulate film. → There is no difference in electrocatalytic current in the presence or absence of mediator. → The stability of the electrode can be improved by crosslinking of the enzyme with bovine serum albumin and glutaraldehyde. - Abstract: Bilirubin oxidase was immobilised on ITO electrodes: bare or covered by ITO nanoparticulate film. The latter material was obtained by immersion and withdrawal of the substrate into ITO nanoparticles suspension. Formation of a protein deposit was confirmed by scanning electron microscopy, atomic force microscopy and X-ray photoelectron spectroscopy. The electrode surface is covered by a protein film in the form of globular aggregates and it exhibits mediatorless electrocatalytic activity towards dioxygen reduction to water at pH 4.8. Modification of the electrode with ITO particles increases its catalytic activity about ten times up to 110 μA cm -2 seen for electrodes prepared by twelve immersion and withdrawal steps into ITO nanoparticle suspension. The catalytic activity is almost unaffected by addition of mediator to solution. The stability of the electrodes is increased by cross-linking of the enzyme with bovine serum albumin and glutaraldehyde. This electrode was applied as biocathode in a zinc-dioxygen battery operating in 0.1 mol dm -3 McIlvaine buffer (pH 4.8).

  12. Mediatorless bioelectrocatalysis of dioxygen reduction at indium-doped tin oxide (ITO) and ITO nanoparticulate film electrodes

    Energy Technology Data Exchange (ETDEWEB)

    Rozniecka, Ewa; Jonsson-Niedziolka, Martin; Sobczak, Janusz W. [Institute of Physical Chemistry, Polish Academy of Sciences, ul. Kasprzaka 44/52, 01-224 Warszawa (Poland); Opallo, Marcin, E-mail: mopallo@ichf.edu.pl [Institute of Physical Chemistry, Polish Academy of Sciences, ul. Kasprzaka 44/52, 01-224 Warszawa (Poland)

    2011-10-01

    Highlights: > We introduced ITO nanoparticulate films for enzyme immobilization. > The material promotes mediatorless bioelectrocatalysis towards dioxygen reduction. > The electrocatalytical current increase with the thickness of nanoparticulate film. > There is no difference in electrocatalytic current in the presence or absence of mediator. > The stability of the electrode can be improved by crosslinking of the enzyme with bovine serum albumin and glutaraldehyde. - Abstract: Bilirubin oxidase was immobilised on ITO electrodes: bare or covered by ITO nanoparticulate film. The latter material was obtained by immersion and withdrawal of the substrate into ITO nanoparticles suspension. Formation of a protein deposit was confirmed by scanning electron microscopy, atomic force microscopy and X-ray photoelectron spectroscopy. The electrode surface is covered by a protein film in the form of globular aggregates and it exhibits mediatorless electrocatalytic activity towards dioxygen reduction to water at pH 4.8. Modification of the electrode with ITO particles increases its catalytic activity about ten times up to 110 {mu}A cm{sup -2} seen for electrodes prepared by twelve immersion and withdrawal steps into ITO nanoparticle suspension. The catalytic activity is almost unaffected by addition of mediator to solution. The stability of the electrodes is increased by cross-linking of the enzyme with bovine serum albumin and glutaraldehyde. This electrode was applied as biocathode in a zinc-dioxygen battery operating in 0.1 mol dm{sup -3} McIlvaine buffer (pH 4.8).

  13. FeNi3/indium tin oxide (ITO) composite nanoparticles with excellent microwave absorption performance and low infrared emissivity

    International Nuclear Information System (INIS)

    Fu, Li-Shun; Jiang, Jian-Tang; Zhen, Liang; Shao, Wen-Zhu

    2013-01-01

    Highlights: ► Electrical conductivity and infrared emissivity can be controlled by ITO content. ► The infrared emissivity is the lowest when the mole ratio of In:Sn in sol is 9:1. ► The permittivity in microwave band can be controlled by the electrical conductivity. ► EMA performance is significantly influenced by the content of ITO phase. ► FeNi 3 /ITO composite particles are suitable for both infrared and radar camouflage. - Abstract: FeNi 3 /indium tin oxide (ITO) composite nanoparticles were synthesized by a self-catalyzed reduction method and a sol–gel process. The dependence of the content of ITO phase with the mole ratios of In:Sn of different sols was investigated. The relation between the electrical conductivity, infrared emissivity of FeNi 3 /ITO composite nanoparticles and the content of ITO phase was discussed. Electromagnetic wave absorption (EMA) performance of products was evaluated by using transmission line theory. It was found that EMA performance including the intensity and the location of effective band is significantly dependent on the content of ITO phase. The low infrared emissivity and superior EMA performance of FeNi 3 /ITO composite nanoparticles can be both achieved when the mole ratio of In:Sn in sol is 9:1.

  14. FeNi{sub 3}/indium tin oxide (ITO) composite nanoparticles with excellent microwave absorption performance and low infrared emissivity

    Energy Technology Data Exchange (ETDEWEB)

    Fu, Li-Shun; Jiang, Jian-Tang [School of Materials Science and Engineering, Harbin Institute of Technology, Harbin 150001 (China); Zhen, Liang, E-mail: lzhen@hit.edu.cn [School of Materials Science and Engineering, Harbin Institute of Technology, Harbin 150001 (China); MOE Key Laboratory of Micro-systems and Micro-structures Manufacturing, Harbin Institute of Technology, Harbin 150080 (China); Shao, Wen-Zhu [School of Materials Science and Engineering, Harbin Institute of Technology, Harbin 150001 (China)

    2013-03-01

    Highlights: Black-Right-Pointing-Pointer Electrical conductivity and infrared emissivity can be controlled by ITO content. Black-Right-Pointing-Pointer The infrared emissivity is the lowest when the mole ratio of In:Sn in sol is 9:1. Black-Right-Pointing-Pointer The permittivity in microwave band can be controlled by the electrical conductivity. Black-Right-Pointing-Pointer EMA performance is significantly influenced by the content of ITO phase. Black-Right-Pointing-Pointer FeNi{sub 3}/ITO composite particles are suitable for both infrared and radar camouflage. - Abstract: FeNi{sub 3}/indium tin oxide (ITO) composite nanoparticles were synthesized by a self-catalyzed reduction method and a sol-gel process. The dependence of the content of ITO phase with the mole ratios of In:Sn of different sols was investigated. The relation between the electrical conductivity, infrared emissivity of FeNi{sub 3}/ITO composite nanoparticles and the content of ITO phase was discussed. Electromagnetic wave absorption (EMA) performance of products was evaluated by using transmission line theory. It was found that EMA performance including the intensity and the location of effective band is significantly dependent on the content of ITO phase. The low infrared emissivity and superior EMA performance of FeNi{sub 3}/ITO composite nanoparticles can be both achieved when the mole ratio of In:Sn in sol is 9:1.

  15. Saturable Absorption and Modulation Characteristics of Laser with Graphene Oxide Spin Coated on ITO Substrate

    OpenAIRE

    Li, Xin; Zhang, Haikun; Wang, Peiji; Li, Guiqiu; Zhao, Shengzhi; Wang, Jing; Chen, Lijuan

    2014-01-01

    The graphene oxide (GO) thin film has been obtained by mixture of GO spin coated on substrate of indium tin oxide (ITO). The experiment has shown that continuous-wave laser is modulated when the graphene oxide saturable absorber (GO-SA) is employed in the 1064 nm laser cavity. The shortest pulse width is 108 ns at the pump power of 5.04 W. Other output laser characteristics, such as the threshold pump power, the repetition rate, and the peak power, have also been measured. The results have de...

  16. Switchable Super-Hydrophilic/Hydrophobic Indium Tin Oxide (ITO) Film Surfaces on Reactive Ion Etching (RIE) Textured Si Wafer.

    Science.gov (United States)

    Kim, Hwa-Min; Litao, Yao; Kim, Bonghwan

    2015-11-01

    We have developed a surface texturing process for pyramidal surface features along with an indium tin oxide (ITO) coating process to fabricate super-hydrophilic conductive surfaces. The contact angle of a water droplet was less than 5 degrees, which means that an extremely high wettability is achievable on super-hydrophilic surfaces. We have also fabricated a super-hydrophobic conductive surface using an additional coating of polytetrafluoroethylene (PTFE) on the ITO layer coated on the textured Si surface; the ITO and PTFE films were deposited by using a conventional sputtering method. We found that a super-hydrophilic conductive surface is produced by ITO coated on the pyramidal Si surface (ITO/Si), with contact angles of approximately 0 degrees and a resistivity of 3 x 10(-4) Ω x cm. These values are highly dependent on the substrate temperature during the sputtering process. We also found that the super-hydrophobic conductive surface produced by the additional coating of PTFE on the pyramidal Si surface with an ITO layer (PTFE/ITO/Si) has a contact angle of almost 160 degrees and a resistivity of 3 x 10(-4) Ω x cm, with a reflectance lower than 9%. Therefore, these processes can be used to fabricate multifunctional features of ITO films for switchable super-hydrophilic and super-hydrophobic surfaces.

  17. F2-laser patterning of indium tin oxide (ITO) thin film on glass substrate

    International Nuclear Information System (INIS)

    Xu, M.Y.; Li, J.; Herman, P.R.; Lilge, L.D.

    2006-01-01

    This paper reports the controlled micromachining of 100 nm thick indium tin oxide (ITO) thin films on glass substrates with a vacuum-ultraviolet 157 nm F 2 laser. Partial to complete film removal was observed over a wide fluence window from 0.49 J/cm 2 to an optimized single pulse fluence of 4.5 J/cm 2 for complete film removal. Optical microscopy, atomic force microscopy, and energy dispersive X-ray analysis show little substrate or collateral damage by the laser pulse which conserved the stoichiometry, optical transparency and electrical conductivity of ITO coating adjacent to the trenches. At higher fluence, a parallel micron sized channel can be etched in the glass substrate. The high photon energy and top-hat beam homogenized optical system of the F 2 laser opens new means for direct structuring of electrodes and microchannels in biological microfluidic systems or in optoelectronics. (orig.)

  18. Combustion synthesized indium-tin-oxide (ITO) thin film for source/drain electrodes in all solution-processed oxide thin-film transistors

    International Nuclear Information System (INIS)

    Tue, Phan Trong; Inoue, Satoshi; Takamura, Yuzuru; Shimoda, Tatsuya

    2016-01-01

    We report combustion solution synthesized (SCS) indium-tin-oxide (ITO) thin film, which is a well-known transparent conductive oxide, for source/drain (S/D) electrodes in solution-processed amorphous zirconium-indium-zinc-oxide TFT. A redox-based combustion synthetic approach is applied to ITO thin film using acetylacetone as a fuel and metal nitrate as oxidizer. The structural and electrical properties of SCS-ITO precursor solution and thin films were systematically investigated with changes in tin concentration, indium metal precursors, and annealing conditions such as temperature, time, and ambient. It was found that at optimal conditions the SCS-ITO thin film exhibited high crystalline quality, atomically smooth surface (RMS ∝ 4.1 Aa), and low electrical resistivity (4.2 x 10 -4 Ω cm). The TFT using SCS-ITO film as the S/D electrodes showed excellent electrical properties with negligible hysteresis. The obtained ''on/off'' current ratio, subthreshold swing factor, subthreshold voltage, and field-effect mobility were 5 x 10 7 , 0.43 V/decade, 0.7 V, and 2.1 cm 2 /V s, respectively. The performance and stability of the SCS-ITO TFT are comparable to those of the sputtered-ITO TFT, emphasizing that the SCS-ITO film is a promising candidate for totally solution-processed oxide TFTs. (orig.)

  19. Metal-insulator transition in tin doped indium oxide (ITO) thin films: Quantum correction to the electrical conductivity

    OpenAIRE

    Deepak Kumar Kaushik; K. Uday Kumar; A. Subrahmanyam

    2017-01-01

    Tin doped indium oxide (ITO) thin films are being used extensively as transparent conductors in several applications. In the present communication, we report the electrical transport in DC magnetron sputtered ITO thin films (prepared at 300 K and subsequently annealed at 673 K in vacuum for 60 minutes) in low temperatures (25-300 K). The low temperature Hall effect and resistivity measurements reveal that the ITO thin films are moderately dis-ordered (kFl∼1; kF is the Fermi wave vector and l ...

  20. Saturable Absorption and Modulation Characteristics of Laser with Graphene Oxide Spin Coated on ITO Substrate

    Directory of Open Access Journals (Sweden)

    Xin Li

    2014-01-01

    Full Text Available The graphene oxide (GO thin film has been obtained by mixture of GO spin coated on substrate of indium tin oxide (ITO. The experiment has shown that continuous-wave laser is modulated when the graphene oxide saturable absorber (GO-SA is employed in the 1064 nm laser cavity. The shortest pulse width is 108 ns at the pump power of 5.04 W. Other output laser characteristics, such as the threshold pump power, the repetition rate, and the peak power, have also been measured. The results have demonstrated that graphene oxide is an available saturable absorber for 1064 nm passive Q-switching laser.

  1. Metal-insulator transition in tin doped indium oxide (ITO thin films: Quantum correction to the electrical conductivity

    Directory of Open Access Journals (Sweden)

    Deepak Kumar Kaushik

    2017-01-01

    Full Text Available Tin doped indium oxide (ITO thin films are being used extensively as transparent conductors in several applications. In the present communication, we report the electrical transport in DC magnetron sputtered ITO thin films (prepared at 300 K and subsequently annealed at 673 K in vacuum for 60 minutes in low temperatures (25-300 K. The low temperature Hall effect and resistivity measurements reveal that the ITO thin films are moderately dis-ordered (kFl∼1; kF is the Fermi wave vector and l is the electron mean free path and degenerate semiconductors. The transport of charge carriers (electrons in these disordered ITO thin films takes place via the de-localized states. The disorder effects lead to the well-known ‘metal-insulator transition’ (MIT which is observed at 110 K in these ITO thin films. The MIT in ITO thin films is explained by the quantum correction to the conductivity (QCC; this approach is based on the inclusion of quantum-mechanical interference effects in Boltzmann’s expression of the conductivity of the disordered systems. The insulating behaviour observed in ITO thin films below the MIT temperature is attributed to the combined effect of the weak localization and the electron-electron interactions.

  2. Metal-insulator transition in tin doped indium oxide (ITO) thin films: Quantum correction to the electrical conductivity

    Science.gov (United States)

    Kaushik, Deepak Kumar; Kumar, K. Uday; Subrahmanyam, A.

    2017-01-01

    Tin doped indium oxide (ITO) thin films are being used extensively as transparent conductors in several applications. In the present communication, we report the electrical transport in DC magnetron sputtered ITO thin films (prepared at 300 K and subsequently annealed at 673 K in vacuum for 60 minutes) in low temperatures (25-300 K). The low temperature Hall effect and resistivity measurements reveal that the ITO thin films are moderately dis-ordered (kFl˜1; kF is the Fermi wave vector and l is the electron mean free path) and degenerate semiconductors. The transport of charge carriers (electrons) in these disordered ITO thin films takes place via the de-localized states. The disorder effects lead to the well-known `metal-insulator transition' (MIT) which is observed at 110 K in these ITO thin films. The MIT in ITO thin films is explained by the quantum correction to the conductivity (QCC); this approach is based on the inclusion of quantum-mechanical interference effects in Boltzmann's expression of the conductivity of the disordered systems. The insulating behaviour observed in ITO thin films below the MIT temperature is attributed to the combined effect of the weak localization and the electron-electron interactions.

  3. Better Organic Ternary Memory Performance through Self-Assembled Alkyltrichlorosilane Monolayers on Indium Tin Oxide (ITO) Surfaces.

    Science.gov (United States)

    Hou, Xiang; Cheng, Xue-Feng; Zhou, Jin; He, Jing-Hui; Xu, Qing-Feng; Li, Hua; Li, Na-Jun; Chen, Dong-Yun; Lu, Jian-Mei

    2017-11-16

    Recently, surface engineering of the indium tin oxide (ITO) electrode of sandwich-like organic electric memory devices was found to effectively improve their memory performances. However, there are few methods to modify the ITO substrates. In this paper, we have successfully prepared alkyltrichlorosilane self-assembled monolayers (SAMs) on ITO substrates, and resistive random access memory devices are fabricated on these surfaces. Compared to the unmodified ITO substrates, organic molecules (i.e., 2-((4-butylphenyl)amino)-4-((4-butylphenyl)iminio)-3-oxocyclobut-1-en-1-olate, SA-Bu) grown on these SAM-modified ITO substrates have rougher surface morphologies but a smaller mosaicity. The organic layer on the SAM-modified ITO further aged to eliminate the crystalline phase diversity. In consequence, the ternary memory yields are effectively improved to approximately 40-47 %. Our results suggest that the insertion of alkyltrichlorosilane self-assembled monolayers could be an efficient method to improve the performance of organic memory devices. © 2017 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

  4. Characteristics of Indium Tin Oxide (ITO Nanoparticles Recovered by Lift-off Method from TFT-LCD Panel Scraps

    Directory of Open Access Journals (Sweden)

    Dongchul Choi

    2014-11-01

    Full Text Available In this study, indium-tin-oxide (ITO nanoparticles were simply recovered from the thin film transistor-liquid crystal display (TFT-LCD panel scraps by means of lift-off method. This can be done by dissolving color filter (CF layer which is located between ITO layer and glass substrate. In this way the ITO layer was easily lifted off the glass substrate of the panel scrap without panel crushing. Over 90% of the ITO on the TFT-LCD panel was recovered by using this method. After separating, the ITO was obtained as particle form and their characteristics were investigated. The recovered product appeared as aggregates of particles less than 100 nm in size. The weight ratio of In/Sn is very close to 91/9. XRD analysis showed that the ITO nanoparticles have well crystallized structures with (222 preferred orientation even after recovery. The method described in this paper could be applied to the industrial recovery business for large size LCD scraps from TV easily without crushing the glass substrate.

  5. The utilization of SiNWs/AuNPs-modified indium tin oxide (ITO) in fabrication of electrochemical DNA sensor.

    Science.gov (United States)

    Rashid, Jahwarhar Izuan Abdul; Yusof, Nor Azah; Abdullah, Jaafar; Hashim, Uda; Hajian, Reza

    2014-12-01

    This work describes the incorporation of SiNWs/AuNPs composite as a sensing material for DNA detection on indium tin-oxide (ITO) coated glass slide. The morphology of SiNWs/AuNPs composite as the modifier layer on ITO was studied by scanning electron microscopy (SEM) and energy dispersive X-ray spectroscopy (EDX). The morphological studies clearly showed that SiNWs were successfully decorated with 20 nm-AuNPs using self-assembly monolayer (SAM) technique. The effective surface area for SiNWs/AuNPs-modified ITO enhanced about 10 times compared with bare ITO electrode. SiNWs/AuNPs nanocomposite was further explored as a matrix for DNA probe immobilization in detection of dengue virus as a bio-sensing model to evaluate its performance in electrochemical sensors. The hybridization of complementary DNA was monitored by differential pulse voltammetry (DPV) using methylene blue (MB) as the redox indicator. The fabricated biosensor was able to discriminate significantly complementary, non-complementary and single-base mismatch oligonucleotides. The electrochemical biosensor was sensitive to target DNA related to dengue virus in the range of 9.0-178.0 ng/ml with detection limit of 3.5 ng/ml. In addition, SiNWs/AuNPs-modified ITO, regenerated up to 8 times and its stability was up to 10 weeks at 4°C in silica gel. Copyright © 2014 Elsevier B.V. All rights reserved.

  6. Electrophoretic deposition (EPD) of multi-walled carbon nano tubes (MWCNT) onto indium-tin-oxide (ITO) glass substrates

    International Nuclear Information System (INIS)

    Mohd Roslie Ali; Shahrul Nizam Mohd Salleh

    2009-01-01

    Full text: Multi-Walled Carbon Nano tubes (MWCNT) were deposited onto Indium-Tin-Oxide (ITO)-coated glass substrates by introducing the use of Electrophoretic Deposition (EPD) as the method. The Multi-Walled Carbon Nano tubes (MWCNT) were dispersed ultrasonically in ethanol and sodium hydroxide (NaOH) to form stable suspension. The addition of Sodium Hydroxide in ethanol can stabilize the suspension, which was very important step before the deposition take place. Two substrates of Indium-Tin-Oxide(ITO)-coated glass placed in parallel facing each other (conductive side) into the suspension. The deposition occurs at room temperature, which the distance fixed at 1 cm between both electrodes and the voltage level applied was fixed at 400 V, respectively. The deposition time also was fixed at 30 minutes. The deposited ITO-Glass with Multi-Walled Carbon Nano tubes (MWCNT) will be characterized using Scanning Electron Microscope (SEM), Atomic Force Microscope (AFM), and Raman Microscope. The images of SEM shows that the Multi -Walled Carbon Nano tubes (MWCNT) were distributed uniformly onto the surface of ITO-Glass. The deposited ITO-Glass with Multi-Walled Carbon Nano tubes (MWCNT) could be the potential material in various practical applications such as field emission devices, fuel cells, and super capacitors. Electrophoretic deposition (EPD) technique was found to be an efficient technique in forming well distribution of Multi-Walled Carbon Nano tubes (MWCNT) onto ITO-Glass substrates, as proved in characterization methods, in which the optimum conditions will play the major role. (author)

  7. Correlation between optical and structural properties of copper oxide electrodeposited on ITO glass

    Energy Technology Data Exchange (ETDEWEB)

    Messaoudi, O., E-mail: olfamassaoudi@gmail.com [Laboratoire de Photovoltaïque, Centre des Recherches et des Technologies de l’Energie, Technopole BorjCedria, B.P. 95, Hammammlif 2050 (Tunisia); Makhlouf, H.; Souissi, A.; Ben assaker, I.; Karyaoui, M. [Laboratoire de Photovoltaïque, Centre des Recherches et des Technologies de l’Energie, Technopole BorjCedria, B.P. 95, Hammammlif 2050 (Tunisia); Bardaoui, A. [Laboratoire de Photovoltaïque, Centre des Recherches et des Technologies de l’Energie, Technopole BorjCedria, B.P. 95, Hammammlif 2050 (Tunisia); Physics department, Taif University (Saudi Arabia); Oueslati, M. [Unité de nano matériaux et photoniques, Faculté des Sciences de Tunis, ElManar1, 2092 Tunis (Tunisia); Chtourou, R. [Laboratoire de Photovoltaïque, Centre des Recherches et des Technologies de l’Energie, Technopole BorjCedria, B.P. 95, Hammammlif 2050 (Tunisia)

    2014-10-25

    Highlights: • Copper oxide films were grown by electrodeposition method with different applied potential. • Forouhi and Bloomer ellipsometric model were used. • Correlation between structural and optical proprieties was done. - Abstract: In this paper we study the growth of copper oxide (Cu{sub 2}O) thin films on indium tin oxide (ITO)-coated glass substrate by electrochemical deposition. We vary the applied potential from −0.50 to −0.60 V vs. Ag/AgCl in order to have a pure Cu{sub 2}O. The copper oxide thin films properties are obtained using Spectroscopic Ellipsometry (SE) in the frame of the Forouhi and Bloomer model. This model demonstrates that depending on the applied cathodic potential pure or mixed phases of CuO and Cu{sub 2}O can be obtained. Structural, morphological and optical properties are performed in order to confirm the SE results. X-ray diffraction analysis of the films reveals a mixed phase for a potential lower than −0.60V vs. Ag/AgCl while a high purity is obtained for this last potential. The optical band gap energy (E{sub g}) is evaluated using the tauc relation. Pure Cu{sub 2}O having a band gap of E{sub g} = 2.5 eV and a thickness around 900 nm are therefore successfully obtained with an applied potential of −0.60 V. Raman measurements show the characteristic modes of Cu{sub 2}O with a contribution of CuO modes at 618 cm{sup −1}. The intensity of the CuO modes decreases as the applied cathodic potential increases, leading to pure copper oxide layers.

  8. Effect of replacement of tin doped indium oxide (ITO) by ZnO: analysis of environmental impact categories

    Science.gov (United States)

    Ziemińska-Stolarska, Aleksandra; Barecka, Magda; Zbiciński, Ireneusz

    2017-10-01

    Abundant use of natural resources is doubtlessly one of the greatest challenges of sustainable development. Process alternatives, which enable sustainable manufacturing of valuable products from more accessible resources, are consequently required. One of examples of limited resources is Indium, currently broadly used for tin doped indium oxide (ITO) for production of transparent conductive films (TCO) in electronics industry. Therefore, candidates for Indium replacement, which would offer as good performance as the industrial state-of-the-art technology based on ITO are widely studied. However, the environmental impact of new layers remains unknown. Hence, this paper studies the environmental effect of ITO replacement by zinc oxide (ZnO) by means life cycle assessment (LCA) methodology. The analysis enables to quantify the environmental impact over the entire period of life cycle of products—during manufacturing, use phase and waste generation. The analysis was based on experimental data for deposition process. Further, analysis of different impact categories was performed in order to determine specific environmental effects related to technology change. What results from the analysis, is that ZnO is a robust alternative material for ITO replacement regarding environmental load and energy efficiency of deposition process which is also crucial for sustainable TCO layer production.

  9. The utilization of SiNWs/AuNPs-modified indium tin oxide (ITO) in fabrication of electrochemical DNA sensor

    Energy Technology Data Exchange (ETDEWEB)

    Rashid, Jahwarhar Izuan Abdul [Institute of Advanced Technology, Universiti Putra Malaysia, 43400 Serdang, Selangor (Malaysia); Department of Chemistry and Biology, Centre for Defense Foundation Studies, National Defense University of Malaysia, Sungai Besi Camp, 57000 Kuala Lumpur (Malaysia); Department of Chemistry, Faculty of Science, Universiti Putra Malaysia, 43400 Serdang, Selangor (Malaysia); Yusof, Nor Azah, E-mail: azahy@upm.edu.my [Institute of Advanced Technology, Universiti Putra Malaysia, 43400 Serdang, Selangor (Malaysia); Department of Chemistry, Faculty of Science, Universiti Putra Malaysia, 43400 Serdang, Selangor (Malaysia); Abdullah, Jaafar [Institute of Advanced Technology, Universiti Putra Malaysia, 43400 Serdang, Selangor (Malaysia); Department of Chemistry, Faculty of Science, Universiti Putra Malaysia, 43400 Serdang, Selangor (Malaysia); Hashim, Uda [Institute of Nanoelectronic Engineering, Universiti Malaysia Perlis, 01000 Kangar, Perlis (Malaysia); Hajian, Reza, E-mail: rezahajian@upm.edu.my [Institute of Advanced Technology, Universiti Putra Malaysia, 43400 Serdang, Selangor (Malaysia)

    2014-12-01

    This work describes the incorporation of SiNWs/AuNPs composite as a sensing material for DNA detection on indium tin-oxide (ITO) coated glass slide. The morphology of SiNWs/AuNPs composite as the modifier layer on ITO was studied by scanning electron microscopy (SEM) and energy dispersive X-ray spectroscopy (EDX). The morphological studies clearly showed that SiNWs were successfully decorated with 20 nm-AuNPs using self-assembly monolayer (SAM) technique. The effective surface area for SiNWs/AuNPs-modified ITO enhanced about 10 times compared with bare ITO electrode. SiNWs/AuNPs nanocomposite was further explored as a matrix for DNA probe immobilization in detection of dengue virus as a bio-sensing model to evaluate its performance in electrochemical sensors. The hybridization of complementary DNA was monitored by differential pulse voltammetry (DPV) using methylene blue (MB) as the redox indicator. The fabricated biosensor was able to discriminate significantly complementary, non-complementary and single-base mismatch oligonucleotides. The electrochemical biosensor was sensitive to target DNA related to dengue virus in the range of 9.0–178.0 ng/ml with detection limit of 3.5 ng/ml. In addition, SiNWs/AuNPs-modified ITO, regenerated up to 8 times and its stability was up to 10 weeks at 4 °C in silica gel. - Highlights: • A sensitive biosensor is presented for detection of dengue virus. • SiNWs and AuNPs used as nanocomposite layers on ITO for construction of biosensor • The detection mechanism is based on the interaction of MB with DNA bonded on AuNPs. • The reduction signal of MB decreases upon complementary hybridization.

  10. The utilization of SiNWs/AuNPs-modified indium tin oxide (ITO) in fabrication of electrochemical DNA sensor

    International Nuclear Information System (INIS)

    Rashid, Jahwarhar Izuan Abdul; Yusof, Nor Azah; Abdullah, Jaafar; Hashim, Uda; Hajian, Reza

    2014-01-01

    This work describes the incorporation of SiNWs/AuNPs composite as a sensing material for DNA detection on indium tin-oxide (ITO) coated glass slide. The morphology of SiNWs/AuNPs composite as the modifier layer on ITO was studied by scanning electron microscopy (SEM) and energy dispersive X-ray spectroscopy (EDX). The morphological studies clearly showed that SiNWs were successfully decorated with 20 nm-AuNPs using self-assembly monolayer (SAM) technique. The effective surface area for SiNWs/AuNPs-modified ITO enhanced about 10 times compared with bare ITO electrode. SiNWs/AuNPs nanocomposite was further explored as a matrix for DNA probe immobilization in detection of dengue virus as a bio-sensing model to evaluate its performance in electrochemical sensors. The hybridization of complementary DNA was monitored by differential pulse voltammetry (DPV) using methylene blue (MB) as the redox indicator. The fabricated biosensor was able to discriminate significantly complementary, non-complementary and single-base mismatch oligonucleotides. The electrochemical biosensor was sensitive to target DNA related to dengue virus in the range of 9.0–178.0 ng/ml with detection limit of 3.5 ng/ml. In addition, SiNWs/AuNPs-modified ITO, regenerated up to 8 times and its stability was up to 10 weeks at 4 °C in silica gel. - Highlights: • A sensitive biosensor is presented for detection of dengue virus. • SiNWs and AuNPs used as nanocomposite layers on ITO for construction of biosensor • The detection mechanism is based on the interaction of MB with DNA bonded on AuNPs. • The reduction signal of MB decreases upon complementary hybridization

  11. The effect of oxidation time on the parameters of ITO/Si solar cell prepared by spray pyrolysis

    Energy Technology Data Exchange (ETDEWEB)

    Kandil, S. A; Afifi, H. H; El-hefnawi, S. H; Eliwa, A.Y [Electronic Research Institute, Dokki, Cairo (Egypt)

    2000-07-01

    The indium tin oxide (ITO/N-Si) solar cells have been fabricated by spray pyrolysis technique. The silicon wafers are heated at 500 Celsius degrees with different oxidation time (2-20 min). The best values obtained for ITO/Si solar cell output parameters; open circuit voltage V{sub o}c, short circuit current density J{sub s}c, fill factor FF and efficiency {eta} are 0.48 V, 15 mA/cm{sup 2}, 0.7 and 10.1% respectively. The preceding results were obtained under conditions of 5 minutes oxidation time and the surface area equal to 8 mm{sup 2} when the light intensity is 50 MW/ cm{sup 2}. The values of V{sub o}c, J{sub s}c, FF and {eta} are affected strongly by the varying the oxidation time. This paper is devoted to explain the effect of the interfacial layer SiO{sub 2} thickness on the ITO/Si solar cell parameters as deduced from the I-V and C-V measurements. [Spanish] Mediante tecnicas de pirolisis de dispersion se han fabricado celdas solares de oxido de Indio estanado ITO/N-Si. Las obleas de silicon se calientan a 500 con diferentes tiempos de oxidacion (2-20 min.) Los mejores valores obtenidos para los parametros de produccion de las celdas solares ITO-Si de voltaje en circuito abierto V{sub o}c densidad de corriente de corto circuito J{sub s}c factor de llenado FF y eficiencia {eta} son de 0.48 V, 15 mA/cm{sup 2}, 0.7% y 10.1% respectivamente los resultados precedentes se obtuvieron bajo condiciones de 5 minutos de tiempo de oxidacion y la superficie del area=8 mm{sup 2} cuando la intensidad de la luz es de 50mW/Cm{sup 2}. Los valores de V{sub o}c, J{sub s}c, FF y {eta} se afectan fuertemente por la variacion del tiempo de oxidacion. Este articulo esta dedicado a explicar el efecto del espesor de la capa interfacial de SiO{sub 2} en los parametros de la celda solar ITO-Si como se deduce de las mediciones I-V y C-V.

  12. Impact of oxide thickness on gate capacitance – Modelling and ...

    Indian Academy of Sciences (India)

    Department of Electronics and Communication Engineering, National ... conventional HEMT, Schottky barrier diode is formed at the gate electrode. .... term corresponds to the energy required for the electric field in the oxide layer and the.

  13. Flexible Proton-Gated Oxide Synaptic Transistors on Si Membrane.

    Science.gov (United States)

    Zhu, Li Qiang; Wan, Chang Jin; Gao, Ping Qi; Liu, Yang Hui; Xiao, Hui; Ye, Ji Chun; Wan, Qing

    2016-08-24

    Ion-conducting materials have received considerable attention for their applications in fuel cells, electrochemical devices, and sensors. Here, flexible indium zinc oxide (InZnO) synaptic transistors with multiple presynaptic inputs gated by proton-conducting phosphorosilicate glass-based electrolyte films are fabricated on ultrathin Si membranes. Transient characteristics of the proton gated InZnO synaptic transistors are investigated, indicating stable proton-gating behaviors. Short-term synaptic plasticities are mimicked on the proposed proton-gated synaptic transistors. Furthermore, synaptic integration regulations are mimicked on the proposed synaptic transistor networks. Spiking logic modulations are realized based on the transition between superlinear and sublinear synaptic integration. The multigates coupled flexible proton-gated oxide synaptic transistors may be interesting for neuroinspired platforms with sophisticated spatiotemporal information processing.

  14. The gate oxide integrity of CVD tungsten polycide

    International Nuclear Information System (INIS)

    Wu, N.W.; Su, W.D.; Chang, S.W.; Tseng, M.F.

    1988-01-01

    CVD tungsten polycide has been demonstrated as a good gate material in recent very large scale integration (VLSI) technology. CVD tungsten silicide offers advantages of low resistivity, high temperature stability and good step coverage. On the other hand, the polysilicon underlayer preserves most characteristics of the polysilicon gate and acts as a stress buffer layer to absorb part of the thermal stress origin from the large thermal expansion coefficient of tungsten silicide. Nevertheless, the gate oxide of CVD tungsten polycide is less stable or reliable than that of polysilicon gate. In this paper, the gate oxide integrity of CVD tungsten polycide with various thickness combinations and different thermal processes have been analyzed by several electrical measurements including breakdown yield, breakdown fluence, room temperature TDDB, I-V characteristics, electron traps and interface state density

  15. Three-dimensionally embedded indium tin oxide (ITO) films in photosensitive glass: a transparent and conductive platform for microdevices

    International Nuclear Information System (INIS)

    Beke, S.; Sugioka, K.; Midorikawa, K.; Koroesi, L.; Dekany, I.

    2011-01-01

    A new method for embedding transparent and conductive two- and three-dimensional microstructures in glass is presented. We show that the internal surface of hollow structures fabricated by femtosecond-laser direct writing inside the photosensitive glass can be coated by indium tin oxide (Sn-doped In 2 O 3 , ITO) using a sol-gel process. The idea of combining two transparent materials with different electrical properties, i.e., insulating and conductive, is very promising and hence it opens new prospects in manufacturing cutting edge microdevices, such as lab-on-a-chips (LOCs) and microelectromechanical systems (MEMS). (orig.)

  16. Electrical and optical properties of ITO and ITO/Cr-doped ITO films

    International Nuclear Information System (INIS)

    Caricato, A.P.; Cesaria, M.; Luches, A.; Martino, M.; Valerini, D.; Maruccio, G.; Catalano, M.; Cola, A.; Manera, M.G.; Lomascolo, M.; Taurino, A.; Rella, R.

    2010-01-01

    In this paper we report on the effects of the insertion of Cr atoms on the electrical and optical properties of indium tin oxide (ITO) films to be used as electrodes in spin-polarized light-emitting devices. ITO films and ITO(80 nm)/Cr-doped ITO(20 nm) bilayers and Cr-doped ITO films with a thickness of 20 nm were grown by pulsed ArF excimer laser deposition. The optical, structural, morphological and electrical properties of ITO films and ITO/Cr-doped structures were characterized by UV-Visible transmission and reflection spectroscopy, transmission electron microscopy (TEM), atomic force microscopy (AFM) and Hall-effect analysis. For the different investigations, the samples were deposited on different substrates like silica and carbon coated Cu grids. ITO films with a thickness of 100 nm, a resistivity as low as ∝4 x 10 -4 Ω cm, an energy gap of ∝4.3 eV and an atomic scale roughness were deposited at room temperature without any post-deposition process. The insertion of Cr into the ITO matrix in the upper 20 nm of the ITO matrix induced variations in the physical properties of the structure like an increase of average roughness (∝0.4-0.5 nm) and resistivity (up to ∝8 x 10 -4 Ω cm). These variations were correlated to the microstructure of the Cr-doped ITO films with particular attention to the upper 20 nm. (orig.)

  17. Electrical and optical properties of ITO and ITO/Cr-doped ITO films

    Science.gov (United States)

    Caricato, A. P.; Cesaria, M.; Luches, A.; Martino, M.; Maruccio, G.; Valerini, D.; Catalano, M.; Cola, A.; Manera, M. G.; Lomascolo, M.; Taurino, A.; Rella, R.

    2010-12-01

    In this paper we report on the effects of the insertion of Cr atoms on the electrical and optical properties of indium tin oxide (ITO) films to be used as electrodes in spin-polarized light-emitting devices. ITO films and ITO(80 nm)/Cr-doped ITO(20 nm) bilayers and Cr-doped ITO films with a thickness of 20 nm were grown by pulsed ArF excimer laser deposition. The optical, structural, morphological and electrical properties of ITO films and ITO/Cr-doped structures were characterized by UV-Visible transmission and reflection spectroscopy, transmission electron microscopy (TEM), atomic force microscopy (AFM) and Hall-effect analysis. For the different investigations, the samples were deposited on different substrates like silica and carbon coated Cu grids. ITO films with a thickness of 100 nm, a resistivity as low as ˜4×10-4 Ω cm, an energy gap of ˜4.3 eV and an atomic scale roughness were deposited at room temperature without any post-deposition process. The insertion of Cr into the ITO matrix in the upper 20 nm of the ITO matrix induced variations in the physical properties of the structure like an increase of average roughness (˜0.4-0.5 nm) and resistivity (up to ˜8×10-4 Ω cm). These variations were correlated to the microstructure of the Cr-doped ITO films with particular attention to the upper 20 nm.

  18. Characterization of surface-modified LiMn2O4 cathode materials with indium tin oxide (ITO) coatings and their electrochemical performance

    International Nuclear Information System (INIS)

    Kim, Chang-Sam; Kwon, Soon-Ho; Yoon, Jong-Won

    2014-01-01

    Graphical abstract: -- Highlights: • Indium tin oxide (ITO) is used to modify the surface of LiMn 2 O 4 by a sol–gel method. • The surface-modified layer was observed at a scale of several nanometers on LiMn 2 O 4 . • The ITO-coated LiMn 2 O 4 shows better capacity retention at 30 and 55 °C than pristine LiMn 2 O 4 . -- Abstract: Indium tin oxide (ITO) is used to modify the surface of LiMn 2 O 4 by a sol–gel method in an attempt to improve its electrochemical performance at elevated temperatures. The surface-modified LiMn 2 O 4 is characterized via XRD, FE-SEM, TEM, Auger electron spectroscopy (AES) and inductively coupled plasma-atomic emission spectroscopy (ICP-AES). The surface layer modified by substitution with indium was observed at a scale of several nanometers near the surface on LiMn 2 O 4 . The concentration of ITO for electrochemical performance was varied from 0.3 wt% to 0.8 wt%. The 0.5 wt% ITO coated LiMn 2 O 4 showed the best electrochemical performance. This enhancement in electrochemical performance is mainly attributed to the effect of the surface layer modified through ITO, which could suppress Mn dissolution and reduce the charge transfer resistance at the solid electrolyte interface

  19. Development of nanocrystalline Indium Tin Oxide (ITO) thin films using RF-magnetron sputtering

    International Nuclear Information System (INIS)

    Tamilselvan, N.; Thilakan, Periyasamy

    2013-01-01

    ITO thin films have been deposited on glass substrate using RF Magnetron puttering Technique from the pre-synthesized ITO target. The sputtering parameters such as the deposition temperature, gas composition and the RF power densities were varied. X-ray diffraction studies revealed that the crystallization of the films is mostly depending on the RF power density and substrate temperature. Crystallized films exhibited a change in the preferred orientation from (111) plane to (100) plane at specific conditions such as high RF power density and high oxygen mixing to the plasma. Change in the film microstructure and a shift in the optical bandgap were recorded from the SEM and UV-Visible measurements respectively. (author)

  20. Gate tunneling current and quantum capacitance in metal-oxide-semiconductor devices with graphene gate electrodes

    Science.gov (United States)

    An, Yanbin; Shekhawat, Aniruddh; Behnam, Ashkan; Pop, Eric; Ural, Ant

    2016-11-01

    Metal-oxide-semiconductor (MOS) devices with graphene as the metal gate electrode, silicon dioxide with thicknesses ranging from 5 to 20 nm as the dielectric, and p-type silicon as the semiconductor are fabricated and characterized. It is found that Fowler-Nordheim (F-N) tunneling dominates the gate tunneling current in these devices for oxide thicknesses of 10 nm and larger, whereas for devices with 5 nm oxide, direct tunneling starts to play a role in determining the total gate current. Furthermore, the temperature dependences of the F-N tunneling current for the 10 nm devices are characterized in the temperature range 77-300 K. The F-N coefficients and the effective tunneling barrier height are extracted as a function of temperature. It is found that the effective barrier height decreases with increasing temperature, which is in agreement with the results previously reported for conventional MOS devices with polysilicon or metal gate electrodes. In addition, high frequency capacitance-voltage measurements of these MOS devices are performed, which depict a local capacitance minimum under accumulation for thin oxides. By analyzing the data using numerical calculations based on the modified density of states of graphene in the presence of charged impurities, it is shown that this local minimum is due to the contribution of the quantum capacitance of graphene. Finally, the workfunction of the graphene gate electrode is extracted by determining the flat-band voltage as a function of oxide thickness. These results show that graphene is a promising candidate as the gate electrode in metal-oxide-semiconductor devices.

  1. Structural, optical and electrical characterization of ITO, ITO/Ag and ITO/Ni transparent conductive electrodes

    Energy Technology Data Exchange (ETDEWEB)

    Ali, Ahmad Hadi, E-mail: ahadi@uthm.edu.my [Nano-Optoelectronics Research and Technology Laboratory, School of Physics, Universiti Sains Malaysia, Penang (Malaysia); Science Department, Faculty of Science, Technology and Human Development, Universiti Tun Hussein Onn Malaysia, Johor (Malaysia); Shuhaimi, Ahmad [Low Dimensional Materials Research Centre, Department of Physics, Faculty of Science, Universiti Malaya, Kuala Lumpur (Malaysia); Hassan, Zainuriah [Nano-Optoelectronics Research and Technology Laboratory, School of Physics, Universiti Sains Malaysia, Penang (Malaysia)

    2014-01-01

    We report on the transparent conductive oxides (TCO) characteristics based on the indium tin oxides (ITO) and ITO/metal thin layer as an electrode for optoelectronics device applications. ITO, ITO/Ag and ITO/Ni were deposited on Si and glass substrate by thermal evaporator and radio frequency (RF) magnetron sputtering at room temperature. Post deposition annealing was performed on the samples in air at moderate temperature of 500 °C and 600 °C. The structural, optical and electrical properties of the ITO and ITO/metal were characterized using X-ray diffraction (XRD), UV–Vis spectrophotometer, Hall effect measurement system and atomic force microscope (AFM). The XRD spectrum reveals significant polycrystalline peaks of ITO (2 2 2) and Ag (1 1 1) after post annealing process. The post annealing also improves the visible light transmittance and electrical resistivity of the samples. Figure of merit (FOM) of the ITO, ITO/Ag and ITO/Ni were determined as 5.5 × 10{sup −3} Ω{sup −1}, 8.4 × 10{sup −3} Ω{sup −1} and 3.0 × 10{sup −5} Ω{sup −1}, respectively. The results show that the post annealed ITO with Ag intermediate layer improved the efficiency of the transparent conductive electrodes (TCE) as compared to the ITO and ITO/Ni.

  2. Structural, optical and electrical characterization of ITO, ITO/Ag and ITO/Ni transparent conductive electrodes

    International Nuclear Information System (INIS)

    Ali, Ahmad Hadi; Shuhaimi, Ahmad; Hassan, Zainuriah

    2014-01-01

    We report on the transparent conductive oxides (TCO) characteristics based on the indium tin oxides (ITO) and ITO/metal thin layer as an electrode for optoelectronics device applications. ITO, ITO/Ag and ITO/Ni were deposited on Si and glass substrate by thermal evaporator and radio frequency (RF) magnetron sputtering at room temperature. Post deposition annealing was performed on the samples in air at moderate temperature of 500 °C and 600 °C. The structural, optical and electrical properties of the ITO and ITO/metal were characterized using X-ray diffraction (XRD), UV–Vis spectrophotometer, Hall effect measurement system and atomic force microscope (AFM). The XRD spectrum reveals significant polycrystalline peaks of ITO (2 2 2) and Ag (1 1 1) after post annealing process. The post annealing also improves the visible light transmittance and electrical resistivity of the samples. Figure of merit (FOM) of the ITO, ITO/Ag and ITO/Ni were determined as 5.5 × 10 −3 Ω −1 , 8.4 × 10 −3 Ω −1 and 3.0 × 10 −5 Ω −1 , respectively. The results show that the post annealed ITO with Ag intermediate layer improved the efficiency of the transparent conductive electrodes (TCE) as compared to the ITO and ITO/Ni.

  3. An oxide filled extended trench gate super junction MOSFET structure

    International Nuclear Information System (INIS)

    Cai-Lin, Wang; Jun, Sun

    2009-01-01

    This paper proposes an oxide filled extended trench gate super junction (SJ) MOSFET structure to meet the need of higher frequency power switches application. Compared with the conventional trench gate SJ MOSFET, new structure has the smaller input and output capacitances, and the remarkable improvements in the breakdown voltage, on-resistance and switching speed. Furthermore, the SJ in the new structure can be realized by the existing trench etching and shallow angle implantation, which offers more freedom to SJ MOSFET device design and fabrication. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

  4. Transparently wrap-gated semiconductor nanowire arrays for studies of gate-controlled photoluminescence

    Energy Technology Data Exchange (ETDEWEB)

    Nylund, Gustav; Storm, Kristian; Torstensson, Henrik; Wallentin, Jesper; Borgström, Magnus T.; Hessman, Dan; Samuelson, Lars [Solid State Physics, Nanometer Structure Consortium, Lund University, Box 118, S-221 00 Lund (Sweden)

    2013-12-04

    We present a technique to measure gate-controlled photoluminescence (PL) on arrays of semiconductor nanowire (NW) capacitors using a transparent film of Indium-Tin-Oxide (ITO) wrapping around the nanowires as the gate electrode. By tuning the wrap-gate voltage, it is possible to increase the PL peak intensity of an array of undoped InP NWs by more than an order of magnitude. The fine structure of the PL spectrum reveals three subpeaks whose relative peak intensities change with gate voltage. We interpret this as gate-controlled state-filling of luminescing quantum dot segments formed by zincblende stacking faults in the mainly wurtzite NW crystal structure.

  5. Electrical and optical properties of ITO and ITO/Cr-doped ITO films

    Energy Technology Data Exchange (ETDEWEB)

    Caricato, A.P.; Cesaria, M.; Luches, A.; Martino, M.; Valerini, D. [University of Salento, Physics Department, Lecce (Italy); Maruccio, G. [University of Salento, Scuola Superiore Isufi, Lecce (Italy); Catalano, M.; Cola, A.; Manera, M.G.; Lomascolo, M.; Taurino, A.; Rella, R. [IMM-CNR, Institute for Microelectronics and Microsystems, Lecce (Italy)

    2010-12-15

    In this paper we report on the effects of the insertion of Cr atoms on the electrical and optical properties of indium tin oxide (ITO) films to be used as electrodes in spin-polarized light-emitting devices. ITO films and ITO(80 nm)/Cr-doped ITO(20 nm) bilayers and Cr-doped ITO films with a thickness of 20 nm were grown by pulsed ArF excimer laser deposition. The optical, structural, morphological and electrical properties of ITO films and ITO/Cr-doped structures were characterized by UV-Visible transmission and reflection spectroscopy, transmission electron microscopy (TEM), atomic force microscopy (AFM) and Hall-effect analysis. For the different investigations, the samples were deposited on different substrates like silica and carbon coated Cu grids. ITO films with a thickness of 100 nm, a resistivity as low as {proportional_to}4 x 10{sup -4} {omega} cm, an energy gap of {proportional_to}4.3 eV and an atomic scale roughness were deposited at room temperature without any post-deposition process. The insertion of Cr into the ITO matrix in the upper 20 nm of the ITO matrix induced variations in the physical properties of the structure like an increase of average roughness ({proportional_to}0.4-0.5 nm) and resistivity (up to {proportional_to}8 x 10{sup -4}{omega} cm). These variations were correlated to the microstructure of the Cr-doped ITO films with particular attention to the upper 20 nm. (orig.)

  6. Pengaruh Tekanan Parsial Oksigen Terhadap Koefisien Absorpsi Lapisan Tipis Indium Tin Oxide (ITO

    Directory of Open Access Journals (Sweden)

    Muslimin Muslimin

    2014-01-01

    Full Text Available DOWNLOAD PDFProses  absorpsi  foton  dengan  energi  tertentu  akan  mengeksitasi  elektron  darikeadaan energi yang lebih rendah ke keadaan energi yang lebih tinggi. Untuk menentukankoefisien  ini  secara  eksperimen  terutama  karena  adanya  pengaruh  interferensi  optis  daripola-pola  transmitansi  dan  reflektansi.  Tujuan  penelitian  ini  adalah  untuk  menentukanbesarnya absorpsi lapisan tipis In2O3: SnO2dengan berbagai kadar oksigen yang diberikanpada saat deposisi. Proses pelapisan dilakukan 90% berat In2O3 dan 10% berat SnO2padasubstrat kaca dengan cara sputtering. Pada saat sputtering dilakukan penambahan oksigentertentu  yaitu  2,50%,  3,70%,  5,10%,  6,15%  dan  8,90%  yang  dilakukan  deposisi  padatemperature 1750C. Hasil analisis teramati adanya pergeseran interferensi dan transmitansike arah panjang gelombang yang lebih pendek sebanding dengan kenaikan kadar oksigen.Pada  kadar  oksigen  2,50%  dan  3,70%  koefisien  absorbsi  makin  naik,  tetapi  pada  kadaroksigen  5,10%,  6,15%  dan   8,90%  koefisien  absorpsi  mulai  menurun.  Perlakuan  kadaroksigen  pada  saat  deposisi  lapisan  tipis  ITO  dapat  mempengaruhi  koefisien  absorpsilapisan tipis yang terbentuk.Kata kunci : Kadar oksigen, koefisien absorpsi

  7. Phosphorus oxide gate dielectric for black phosphorus field effect transistors

    Science.gov (United States)

    Dickerson, W.; Tayari, V.; Fakih, I.; Korinek, A.; Caporali, M.; Serrano-Ruiz, M.; Peruzzini, M.; Heun, S.; Botton, G. A.; Szkopek, T.

    2018-04-01

    The environmental stability of the layered semiconductor black phosphorus (bP) remains a challenge. Passivation of the bP surface with phosphorus oxide, POx, grown by a reactive ion etch with oxygen plasma is known to improve photoluminescence efficiency of exfoliated bP flakes. We apply phosphorus oxide passivation in the fabrication of bP field effect transistors using a gate stack consisting of a POx layer grown by reactive ion etching followed by atomic layer deposition of Al2O3. We observe room temperature top-gate mobilities of 115 cm2 V-1 s-1 in ambient conditions, which we attribute to the low defect density of the bP/POx interface.

  8. Carbon nanotube transistors with graphene oxide films as gate dielectrics

    Institute of Scientific and Technical Information of China (English)

    2010-01-01

    Carbon nanomaterials,including the one-dimensional(1-D) carbon nanotube(CNT) and two-dimensional(2-D) graphene,are heralded as ideal candidates for next generation nanoelectronics.An essential component for the development of advanced nanoelectronics devices is processing-compatible oxide.Here,in analogy to the widespread use of silicon dioxide(SiO2) in silicon microelectronic industry,we report the proof-of-principle use of graphite oxide(GO) as a gate dielectrics for CNT field-effect transistor(FET) via a fast and simple solution-based processing in the ambient condition.The exceptional transistor characteristics,including low operation voltage(2 V),high carrier mobility(950 cm2/V-1 s-1),and the negligible gate hysteresis,suggest a potential route to the future all-carbon nanoelectronics.

  9. Thermal oxidation of seeds for the hydrothermal growth of WO3 nanorods on ITO glass substrate

    International Nuclear Information System (INIS)

    Ng, Chai Yan; Abdul Razak, Khairunisak; Lockman, Zainovia

    2015-01-01

    This work reports a simple seed formation method for the hydrothermal growth of tungsten oxide (WO 3 ) nanorods. A WO 3 seed layer was prepared by thermal oxidation, where a W-sputtered substrate was heated and oxidized in a furnace. Oxidation temperatures and periods were varied at 400–550 °C and 5–60 min, respectively, to determine an appropriate seed layer for nanorod growth. Thermal oxidation at 500 °C for 15 min was found to produce a seed layer with sufficient crystallinity and good adhesion to the substrate. These properties prevented the seed from peeling off during the hydrothermal process, thereby allowing nanorod growth on the seed. The nanorod film showed better electrochromic behavior (higher current density of − 1.11 and + 0.65 mA cm −2 ) than compact film (lower current density of − 0.54 and + 0.28 mA cm −2 ). - Highlights: • A simple seed formation method (thermal oxidation) on sputtered W film is reported. • Crystalline seed with good adhesion to substrate is required for nanorod growth. • The appropriate temperature and period for seed formation were 500 °C and 15 min. • WO 3 nanorods exhibited higher electrochromic current density than WO 3 compact film.

  10. Simple and robust near-infrared spectroscopic monitoring of indium-tin-oxide (ITO) etching solution using Teflon tubing

    International Nuclear Information System (INIS)

    Nah, Sanghee; Ryu, Kyungtag; Cho, Soohwa; Chung, Hoeil; Namkung, Hankyu

    2006-01-01

    The ability to monitor etching solutions using a spectroscopy directly through existing Teflon lines in electronic industries is highly beneficial and offers many advantages. A monitoring method was developed using near-infrared (NIR) measurements with Teflon tubing as a sample container for the quantification of components in the indium-tin-oxide (ITO) etching solution composed of hydrochloric acid (HCl), acetic acid (CH 3 COOH) and water. Measurements were reproducible and it was possible to use the same calibration model for different Teflon tubings. Even though partial least squares (PLS) calibration performance was slightly degraded for Teflon cells when compared to quartz cells of the similar pathlength, the calibration data correlated well with reference data. The robustness of Teflon-based NIR measurement was evaluated by predicting the spectra of 10 independent samples that were collected using five different Teflon tubes. Although, two Teflon tubes were visually less transparent than the other three, there was no significant variation in the standard error of predictions (SEPs) among the five Teflon tubes. Calibration accuracy was successfully maintained and highly repeatable prediction results were achieved. This study verifies that a Teflon-based NIR measurement is reliable for the monitoring of etching solutions and it can be successfully integrated into on-line process monitoring

  11. Chemical gating of epitaxial graphene through ultrathin oxide layers.

    Science.gov (United States)

    Larciprete, Rosanna; Lacovig, Paolo; Orlando, Fabrizio; Dalmiglio, Matteo; Omiciuolo, Luca; Baraldi, Alessandro; Lizzit, Silvano

    2015-08-07

    We achieved a controllable chemical gating of epitaxial graphene grown on metal substrates by exploiting the electrostatic polarization of ultrathin SiO2 layers synthesized below it. Intercalated oxygen diffusing through the SiO2 layer modifies the metal-oxide work function and hole dopes graphene. The graphene/oxide/metal heterostructure behaves as a gated plane capacitor with the in situ grown SiO2 layer acting as a homogeneous dielectric spacer, whose high capacity allows the Fermi level of graphene to be shifted by a few hundreds of meV when the oxygen coverage at the metal substrate is of the order of 0.5 monolayers. The hole doping can be finely tuned by controlling the amount of interfacial oxygen, as well as by adjusting the thickness of the oxide layer. After complete thermal desorption of oxygen the intrinsic doping of SiO2 supported graphene is evaluated in the absence of contaminants and adventitious adsorbates. The demonstration that the charge state of graphene can be changed by chemically modifying the buried oxide/metal interface hints at the possibility of tuning the level and sign of doping by the use of other intercalants capable of diffusing through the ultrathin porous dielectric and reach the interface with the metal.

  12. Nanoscale gadolinium oxide capping layers on compositionally variant gate dielectrics

    KAUST Repository

    Alshareef, Husam N.

    2010-11-19

    Metal gate work function enhancement using nanoscale (1.0 nm) Gd2O3 interfacial layers has been evaluated as a function of silicon oxide content in the HfxSiyOz gate dielectric and process thermal budget. It is found that the effective work function tuning by the Gd2O3 capping layer varied by nearly 400 mV as the composition of the underlying dielectric changed from 0% to 100% SiO2, and by nearly 300 mV as the maximum process temperature increased from ambient to 1000 °C. A qualitative model is proposed to explain these results, expanding the existing models for the lanthanide capping layer effect.

  13. Nanoscale gadolinium oxide capping layers on compositionally variant gate dielectrics

    KAUST Repository

    Alshareef, Husam N.; Caraveo-Frescas, J. A.; Cha, D. K.

    2010-01-01

    Metal gate work function enhancement using nanoscale (1.0 nm) Gd2O3 interfacial layers has been evaluated as a function of silicon oxide content in the HfxSiyOz gate dielectric and process thermal budget. It is found that the effective work function tuning by the Gd2O3 capping layer varied by nearly 400 mV as the composition of the underlying dielectric changed from 0% to 100% SiO2, and by nearly 300 mV as the maximum process temperature increased from ambient to 1000 °C. A qualitative model is proposed to explain these results, expanding the existing models for the lanthanide capping layer effect.

  14. Electro-Mechanical Coupling of Indium Tin Oxide Coated Polyethylene Terephthalate ITO/PET for Flexible Solar Cells

    KAUST Repository

    Saleh, Mohamed A.

    2013-01-01

    the homogenization concept as in laminated composites for transverse cracking. The homogenization technique is done twice on COMSOL to determine the mechanical and electrical degradation of ITO due to applied loading. Finally, this damage evolution is used for a

  15. Ultra-low power thin film transistors with gate oxide formed by nitric acid oxidation method

    International Nuclear Information System (INIS)

    Kobayashi, H.; Kim, W. B.; Matsumoto, T.

    2011-01-01

    We have developed a low temperature fabrication method of SiO 2 /Si structure by use of nitric acid, i.e., nitric acid oxidation of Si (NAOS) method, and applied it to thin film transistors (TFT). A silicon dioxide (SiO 2 ) layer formed by the NAOS method at room temperature possesses 1.8 nm thickness, and its leakage current density is as low as that of thermally grown SiO 2 layer with the same thickness formed at ∼900 deg C. The fabricated TFTs possess an ultra-thin NAOS SiO 2 /CVD SiO 2 stack gate dielectric structure. The ultrathin NAOS SiO 2 layer effectively blocks a gate leakage current, and thus, the thickness of the gate oxide layer can be decreased from 80 to 20 nm. The thin gate oxide layer enables to decrease the operation voltage to 2 V (cf. the conventional operation voltage of TFTs with 80 nm gate oxide: 12 V) because of the low threshold voltages, i.e., -0.5 V for P-ch TFTs and 0.5 V for N-ch TFTs, and thus the consumed power decreases to 1/36 of that of the conventional TFTs. The drain current increases rapidly with the gate voltage, and the sub-threshold voltage is ∼80 mV/dec. The low sub-threshold swing is attributable to the thin gate oxide thickness and low interface state density of the NAOS SiO 2 layer. (authors)

  16. Fractal morphological analysis of Bacteriorhodopsin (bR) layers deposited onto Indium Tin Oxide (ITO) electrodes

    International Nuclear Information System (INIS)

    Vengadesh, P.; Muniandy, S.V.; Majid, W.H. Abd.

    2009-01-01

    Uniform Bacteriorhodopsin layers for the purpose of fabricating Bacteriorhodopsin-based biosensors were prepared by allowing drying of the layers under a constant electric field. To properly observe and understand the 'electric field effect' on the protein Bacteriorhodopsin, the electric and non-electric field influenced Bacteriorhodopsin layers prepared using a manual syringe-deposition method applied onto Indium Tin Oxide electrodes were structurally investigated using Scanning Electron Microscopy and Atomic Force Microscopy. The results yield obvious morphological differences between the electric and non-electric field assisted Bacteriorhodopsin layers and brings to attention the occurrence of the so-called 'coffee-ring' effect in the latter case. We applied stochastic fractal method based on the generalized Cauchy process to describe the morphological features surrounding the void. Fractal dimension is used to characterize the local regularity of the Bacteriorhodopsin clusters and the correlation exponent is used to describe the long-range correlation between the clusters. It is found that the Bacteriorhodopsin protein tends to exhibit with strong spatial correlation in the presence of external electric field compared to in absence of the electric field. Long-range correlation in the morphological feature may be associated to the enhancement of aggregation process of Bacteriorhodopsin protein in the presence of electric field, thereby inhibiting the formation of the so-called 'coffee-ring' effect. As such, the observations discussed in this work suggest some amount of control of surface uniformity when forming layers.

  17. Study of the tunnelling initiated leakage current through the carbon nanotube embedded gate oxide in metal oxide semiconductor structures

    International Nuclear Information System (INIS)

    Chakraborty, Gargi; Sarkar, C K; Lu, X B; Dai, J Y

    2008-01-01

    The tunnelling currents through the gate dielectric partly embedded with semiconducting single-wall carbon nanotubes in a silicon metal-oxide-semiconductor (MOS) structure have been investigated. The application of the gate voltage to such an MOS device results in the band bending at the interface of the partly embedded oxide dielectric and the surface of the silicon, initiating tunnelling through the gate oxide responsible for the gate leakage current whenever the thickness of the oxide is scaled. A model for silicon MOS structures, where carbon nanotubes are confined in a narrow layer embedded in the gate dielectric, is proposed to investigate the direct and the Fowler-Nordheim (FN) tunnelling currents of such systems. The idea of embedding such elements in the gate oxide is to assess the possibility for charge storage for memory device applications. Comparing the FN tunnelling onset voltage between the pure gate oxide and the gate oxide embedded with carbon nanotubes, it is found that the onset voltage decreases with the introduction of the nanotubes. The direct tunnelling current has also been studied at very low gate bias, for the thin oxide MOS structure which plays an important role in scaling down the MOS transistors. The FN tunnelling current has also been studied with varying nanotube diameter

  18. Flexible ITO-Free Polymer Solar Cells

    DEFF Research Database (Denmark)

    Angmo, Dechan; Krebs, Frederik C

    2013-01-01

    Indium tin oxide (ITO) is the material-of-choice for transparent conductors in any optoelectronic application. However, scarce resources of indium and high market demand of ITO have created large price fluctuations and future supply concerns. In polymer solar cells (PSCs), ITO is the single......-cost alternatives to ITO suitable for use in PSCs. These alternatives belong to four material groups: polymers; metal and polymer composites; metal nanowires and ultra-thin metal films; and carbon nanotubes and graphene. We further present the progress of employing these alternatives in PSCs and identify future...

  19. Transparent ITO/Ag-Pd-Cu/ITO multilayer cathode use in inverted organic solar cells

    International Nuclear Information System (INIS)

    Kim, Hyo-Joong; Kim, Han-Ki; Lee, Hyun Hwi; Kal, Jinha; Hahn, Jungseok

    2015-01-01

    The characteristics of transparent ITO/Ag-Pd-Cu (APC)/ITO multilayer cathodes were investigated for use in inverted organic solar cells (IOSCs). The insertion of an APC interlayer into the ITO film effectively led to crystallization of the top ITO layer, unlike that in the Ag interlayer, and resulted in a low sheet resistance of 6.55 Ohm/square and a high optical transmittance of 84.14% without post annealing. In addition, the alloying of the Pd and Cu elements into Ag prevented agglomeration and oxidization of the metal interlayer and led to more stable ITO/APC/ITO films under ambient conditions. The microstructure and interfacial structure of the transparent ITO/APC/ITO cathode in the IOSCs were examined in detail by synchrotron X-ray scattering and high resolution transmission electron microscopy. Furthermore, we suggested a possible mechanism to explain the lower PCE of the IOSCs with an ITO/APC/ITO cathode than that of a reference IOSC with a crystalline ITO cathode using the external quantum efficiency of the IOSCs

  20. Transparent ITO/Ag-Pd-Cu/ITO multilayer cathode use in inverted organic solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Hyo-Joong; Kim, Han-Ki, E-mail: imdlhkkim@khu.ac.kr [Department of Advanced Materials Engineering for Information and Electronics, Kyung Hee University, 1 Seocheon-dong, Yongin-si, Gyeonggi-do 446-701 (Korea, Republic of); Lee, Hyun Hwi [Pohang Accelerator Laboratory, POSTECH, Jigokro-127beon-gil, Nam-gu, Pohang 790-784 (Korea, Republic of); Kal, Jinha; Hahn, Jungseok [Future Technology Research Group, Kolon Central Research Park, 154 Mabukro, Giheung-ku, Yongin-si, Kyunggi-do, 16910 (Korea, Republic of)

    2015-10-15

    The characteristics of transparent ITO/Ag-Pd-Cu (APC)/ITO multilayer cathodes were investigated for use in inverted organic solar cells (IOSCs). The insertion of an APC interlayer into the ITO film effectively led to crystallization of the top ITO layer, unlike that in the Ag interlayer, and resulted in a low sheet resistance of 6.55 Ohm/square and a high optical transmittance of 84.14% without post annealing. In addition, the alloying of the Pd and Cu elements into Ag prevented agglomeration and oxidization of the metal interlayer and led to more stable ITO/APC/ITO films under ambient conditions. The microstructure and interfacial structure of the transparent ITO/APC/ITO cathode in the IOSCs were examined in detail by synchrotron X-ray scattering and high resolution transmission electron microscopy. Furthermore, we suggested a possible mechanism to explain the lower PCE of the IOSCs with an ITO/APC/ITO cathode than that of a reference IOSC with a crystalline ITO cathode using the external quantum efficiency of the IOSCs.

  1. Three-dimensional electrodes for dye-sensitized solar cells: synthesis of indium-tin-oxide nanowire arrays and ITO/TiO2 core-shell nanowire arrays by electrophoretic deposition

    International Nuclear Information System (INIS)

    Wang, H-W; Ting, C-F; Hung, M-K; Chiou, C-H; Liu, Y-L; Liu Zongwen; Ratinac, Kyle R; Ringer, Simon P

    2009-01-01

    Dye-sensitized solar cells (DSSCs) show promise as a cheaper alternative to silicon-based photovoltaics for specialized applications, provided conversion efficiency can be maximized and production costs minimized. This study demonstrates that arrays of nanowires can be formed by wet-chemical methods for use as three-dimensional (3D) electrodes in DSSCs, thereby improving photoelectric conversion efficiency. Two approaches were employed to create the arrays of ITO (indium-tin-oxide) nanowires or arrays of ITO/TiO 2 core-shell nanowires; both methods were based on electrophoretic deposition (EPD) within a polycarbonate template. The 3D electrodes for solar cells were constructed by using a doctor-blade for coating TiO 2 layers onto the ITO or ITO/TiO 2 nanowire arrays. A photoelectric conversion efficiency as high as 4.3% was achieved in the DSSCs made from ITO nanowires; this performance was better than that of ITO/TiO 2 core-shell nanowires or pristine TiO 2 films. Cyclic voltammetry confirmed that the reaction current was significantly enhanced when a 3D ITO-nanowire electrode was used. Better separation of charge carriers and improved charge transport, due to the enlarged interfacial area, are thought to be the major advantages of using 3D nanowire electrodes for the optimization of DSSCs.

  2. Surface Preparation and Deposited Gate Oxides for Gallium Nitride Based Metal Oxide Semiconductor Devices

    Directory of Open Access Journals (Sweden)

    Paul C. McIntyre

    2012-07-01

    Full Text Available The literature on polar Gallium Nitride (GaN surfaces, surface treatments and gate dielectrics relevant to metal oxide semiconductor devices is reviewed. The significance of the GaN growth technique and growth parameters on the properties of GaN epilayers, the ability to modify GaN surface properties using in situ and ex situ processes and progress on the understanding and performance of GaN metal oxide semiconductor (MOS devices are presented and discussed. Although a reasonably consistent picture is emerging from focused studies on issues covered in each of these topics, future research can achieve a better understanding of the critical oxide-semiconductor interface by probing the connections between these topics. The challenges in analyzing defect concentrations and energies in GaN MOS gate stacks are discussed. Promising gate dielectric deposition techniques such as atomic layer deposition, which is already accepted by the semiconductor industry for silicon CMOS device fabrication, coupled with more advanced physical and electrical characterization methods will likely accelerate the pace of learning required to develop future GaN-based MOS technology.

  3. Analyzing nitrogen concentration using carrier illumination (CI) technology for DPN ultra-thin gate oxide

    International Nuclear Information System (INIS)

    Li, W.S.; Wu, Bill; Fan, Aki; Kuo, C.W.; Segovia, M.; Kek, H.A.

    2005-01-01

    Nitrogen concentration in the gate oxide plays a key role for 90 nm and below ULSI technology. Techniques like secondary ionization mass spectroscopy (SIMS) and X-ray photoelectron spectroscopy (XPS) are commonly used for understanding N concentration. This paper describes the application of the carrier illuminationTM (CI) technique to measure the nitrogen concentration in ultra-thin gate oxides. A set of ultra-thin gate oxide wafers with different DPN (decoupled plasma nitridation) treatment conditions were measured using the CI technique. The CI signal has excellent correlation with the N concentration as measured by XPS

  4. Annealing effect of ITO and ITO/Cu transparent conductive films in low pressure hydrogen atmosphere

    International Nuclear Information System (INIS)

    Lin, T.-C.; Chang, S.-C.; Chiu, C.-F.

    2006-01-01

    A layer of copper was sputtered onto an indium tin oxide (ITO) glass substrates to form an ITO/Cu film, using a direct current magnetron operated at room temperature and in argon gas. The ITO and ITO/Cu films were heated in vacuum, and in hydrogen gas, to study their dependence of electronic and optical properties on annealing temperature. The resistivity of the ITO film was reduced from 6.2 x 10 -4 to 2.7 x 10 -4 Ω cm, and the average optical transmittance was improved to above 90% by the annealing process. The ITO/Cu film showed a low value of resistivity of 2.8 x 10 -4 Ω cm and the transmittance was between 58 and 72%

  5. Modelling ionising radiation induced defect generation in bipolar oxides with gated diodes

    International Nuclear Information System (INIS)

    Barnaby, H.J.; Cirba, C.; Schrimpf, R.D.; Kosier, St.; Fouillat, P.; Montagner, X.

    1999-01-01

    Radiation-induced oxide defects that degrade electrical characteristics of bipolar junction transistor (BJTs) can be measured with the use of gated diodes. The buildup of defects and their effect on device radiation response are modeled with computer simulation. (authors)

  6. Electrical circuit model of ITO/AZO/Ge photodetector.

    Science.gov (United States)

    Patel, Malkeshkumar; Kim, Joondong

    2017-10-01

    In this data article, ITO/AZO/Ge photodetector was investigated for electrical circuit model. Due to the double (ITO and AZO) transparent metal-oxide films (DOI:10.1016/j.mssp.2016.03.007) (Yun et al., 2016) [1], the Ge heterojunction device has a better interface quality due to the AZO layer with a low electrical resistance due to the ITO layer (Yun et al., 2015) [2]. The electrical and interfacial benefitted ITO/AZO/Ge heterojunction shows the quality Schottky junction. In order to investigate the device, the ITO/AZO/Ge heterojunction was analyzed by R-C circuit model using the impedance spectroscopy.

  7. High precision patterning of ITO using femtosecond laser annealing process

    International Nuclear Information System (INIS)

    Cheng, Chung-Wei; Lin, Cen-Ying

    2014-01-01

    Highlights: • We have reported a process of fabrication of crystalline indium tin oxide (c-ITO) patterns using femtosecond laser-induced crystallization with a Gaussian beam profile followed by chemical etching. • The experimental results have demonstrated that the ablation and crystallization threshold fluences of a-ITO thin film are well-defined, the line width of the c-ITO patterns is controllable. • Fast fabrication of the two parallel sub-micro (∼0.5 μm) c-ITO line patterns using a single femtosecond laser beam and a single scanning path can be achieved. • A long-length sub-micro c-ITO line pattern is fabricated, and the feasibility of fabricating c-ITO patterns is confirmed, which are expected to be used in micro-electronics devices. - Abstract: High precision patterning of crystalline indium tin oxide (c-ITO) patterns on amorphous ITO (a-ITO) thin films by femtosecond laser-induced crystallization with a Gaussian beam profile followed by chemical etching is demonstrated. In the proposed approach, the a-ITO thin film is selectively transformed into a c-ITO structure via a low heat affect zone and the well-defined thresholds (ablation and crystallization) supplied by the femtosecond laser pulse. The experimental results show that by careful control of the laser fluence above the crystallization threshold, c-ITO patterns with controllable line widths and ridge-free characteristics can be accomplished. By careful control of the laser fluence above the ablation threshold, fast fabrication of the two parallel sub-micro c-ITO line patterns using a single femtosecond laser beam and single scanning path can be achieved. Along-length sub-micro c-ITO line pattern is fabricated, and the feasibility of fabricating c-ITO patterns is confirmed, which are expected to be used in micro-electronics devices

  8. Role of Nitrogenase and Ferredoxin in the Mechanism of Bioelectrocatalytic Nitrogen Fixation by the Cyanobacteria Anabaena variabilis SA-1 Mutant Immobilized on Indium Tin Oxide (ITO) Electrodes

    International Nuclear Information System (INIS)

    Knoche, Krysti L.; Aoyama, Erika; Hasan, Kamrul; Minteer, Shelley D.

    2017-01-01

    Current ammonia production methods are costly and environmentally detrimental. Biological nitrogen fixation has implications for low cost, environmentally friendly ammonia production. It has been shown that electrochemical stimulation increases the ammonia output of the cyanobacteria SA-1 mutant of Anabaena variabilis, but the mechanism of bioelectrocatalysis has been unknown. Here, the mechanism of electrostimulated biological ammonia production is investigated by immobilization of the cyanobacteria with polyvinylamine on indium tin oxide (ITO) coated polyethylene. Cyclic voltammetry is performed in the absence and presence of various substrates and with nitrogenase repressed and nitrogenase derepressed cells to study mechanism, and cyclic voltammetry and UV–vis spectroscopy are used to identify redox moieties in the spent electrolyte. A bioelectrocatalytic signal is observed for nitrogenase derepressed A. variabilis SA-1 in the presence of N_2 and light. Results indicate that the redox protein ferredoxin mediates electron transfer between nitrogenase and the electrode to stimulate ammonia production.

  9. Infinitely high etch selectivity during CH4/H2/Ar inductively coupled plasma (ICP) etching of indium tin oxide (ITO) with photoresist mask

    International Nuclear Information System (INIS)

    Kim, D.Y.; Ko, J.H.; Park, M.S.; Lee, N.-E.

    2008-01-01

    Under certain conditions during ITO etching using CH 4 /H 2 /Ar inductively coupled plasmas, the etch rate selectivity of ITO to photoresist (PR) was infinitely high because the ITO films continued to be etched, but a net deposition of the α-C:H layer occurred on the top of the PR. Analyses of plasmas and etched ITO surfaces suggested that the continued consumption of the carbon and hydrogen in the deposited α-C:H layer by their chemical reaction with In and Sn atoms in the ITO resulting in the generation of volatile metal-organic etch products and by the ion-enhanced removal of the α-C:H layer presumably play important roles in determining the ITO etch rate and selectivity

  10. ITO-TiN-ITO Sandwiches for Near-Infrared Plasmonic Materials.

    Science.gov (United States)

    Chen, Chaonan; Wang, Zhewei; Wu, Ke; Chong, Haining; Xu, Zemin; Ye, Hui

    2018-05-02

    Indium tin oxide (ITO)-based sandwich structures with the insertion of ultrathin (ITO layers show TiN-thickness-dependent properties, which lead to moderate and tunable effective permittivities for the sandwiches. The surface plasmon polaritons (SPP) of the ITO-TiN-ITO sandwich at the telecommunication window (1480-1570 nm) are activated by prism coupling using Kretschmann configuration. Compared with pure ITO films or sandwiches with metal insertion, the reflectivity dip for sandwiches with TiN is relatively deeper and wider, indicating the enhanced coupling ability in plasmonic materials for telecommunications. The SPP spatial profile, penetration depth, and degree of confinement, as well as the quality factors, demonstrate the applicability of such sandwiches for NIR plasmonic materials in various devices.

  11. Impact of metal-ion contaminated silica particles on gate oxide integrity

    NARCIS (Netherlands)

    Rink, Ingrid; Wali, F.; Knotter, D.M.

    2009-01-01

    The impact of metal-ion contamination (present on wafer surface before oxidation) on gate oxide integrity (GOI) is well known in literature, which is not the case for clean silica particles [1, 2]. However, it is known that particles present in ultra-pure water (UPW) decrease the random yield in

  12. Fully patterned p-channel SnO TFTs using transparent Al2O3 gate insulator and ITO as source and drain contacts

    Science.gov (United States)

    Guzmán-Caballero, D. E.; Quevedo-López, M. A.; De la Cruz, W.; Ramírez-Bon, R.

    2018-03-01

    SnO p-type was used as active layer to fabricate thin film transistors (TFTs) through photolithography and dry etching processes. The SnO p-type thin films (25 nm) were deposited by DC reactive sputtering with variable oxygen (O2) flow rate to then be annealed in air at 250 ◦C. Al2O3 gate dielectric (15 nm) was deposited by atomic layer deposition. Hall measurements showed p-type carrier concentration (N h ) of around 1 × 1018 cm-3 and Hall mobilities (μ Hall) between 0.35 and 2.64 cm2 V-1 s-1, depending on the O2 flow rate during deposition. The hole transport was dominated by variable-range hopping conduction. A change in the preferred crystalline orientation in the SnO films from (101) to (110) was associated with the increase in μ Hall. In addition, Raman vibrational modes at 110 and 209 cm-1 of polycrystalline SnO films showed certain dependence with the grain orientation. The SnO-based TFTs showed p-type behavior with low threshold voltages (V T ) and low sub threshold swing (SS) in the range from 1.76 to 3.50 V and 1.63 to 3.24 V/dec., respectively. The TFTs mobilities in the saturation regime (μ sat) were in the range of 0.12 and 1.32 cm2 V-1 s-1. The current on/off ratio (I ON/I OFF) was in the order of 102, approximately. The large values of the interface trap density (D IT) contributed to the high I OFF and the low I ON/I OFF of the TFTs.

  13. Thickness-dependent surface plasmon resonance of ITO nanoparticles for ITO/In-Sn bilayer structure.

    Science.gov (United States)

    Wei, Wenzuo; Hong, Ruijin; Jing, Ming; Shao, Wen; Tao, Chunxian; Zhang, Dawei

    2018-01-05

    Tuning the localized surface plasmon resonance (LSPR) in doped semiconductor nanoparticles (NPs), which represents an important characteristic in LSPR sensor applications, still remains a challenge. Here, indium tin oxide/indium tin alloy (ITO/In-Sn) bilayer films were deposited by electron beam evaporation and the properties, such as the LSPR and surface morphology, were investigated by UV-VIS-NIR double beam spectrophotometer and atomic force microscopy (AFM), respectively. By simply engineering the thickness of ITO/In-Sn NPs without any microstructure fabrications, the LSPR wavelength of ITO NPs can be tuned by a large amount from 858 to 1758 nm. AFM images show that the strong LSPR of ITO NPs is closely related to the enhanced coupling between ITO and In-Sn NPs. Blue shifts of ITO LSPR from 1256 to 1104 nm are also observed in the as-annealed samples due to the higher free carrier concentration. Meanwhile, we also demonstrated that the ITO LSPR in ITO/In-Sn NPs structures has good sensitivity to the surrounding media and stability after 30 d exposure in air, enabling its application prospects in many biosensing devices.

  14. Direct deposition of aluminum oxide gate dielectric on graphene channel using nitrogen plasma treatment

    International Nuclear Information System (INIS)

    Lim, Taekyung; Kim, Dongchool; Ju, Sanghyun

    2013-01-01

    Deposition of high-quality dielectric on a graphene channel is an essential technology to overcome structural constraints for the development of nano-electronic devices. In this study, we investigated a method for directly depositing aluminum oxide (Al 2 O 3 ) on a graphene channel through nitrogen plasma treatment. The deposited Al 2 O 3 thin film on graphene demonstrated excellent dielectric properties with negligible charge trapping and de-trapping in the gate insulator. A top-gate-structural graphene transistor was fabricated using Al 2 O 3 as the gate dielectric with nitrogen plasma treatment on graphene channel region, and exhibited p-type transistor characteristics

  15. Bias-induced migration of ionized donors in amorphous oxide semiconductor thin-film transistors with full bottom-gate and partial top-gate structures

    Directory of Open Access Journals (Sweden)

    Mallory Mativenga

    2012-09-01

    Full Text Available Bias-induced charge migration in amorphous oxide semiconductor thin-film transistors (TFTs confirmed by overshoots of mobility after bias stressing dual gated TFTs is presented. The overshoots in mobility are reversible and only occur in TFTs with a full bottom-gate (covers the whole channel and partial top-gate (covers only a portion of the channel, indicating a bias-induced uneven distribution of ionized donors: Ionized donors migrate towards the region of the channel that is located underneath the partial top-gate and the decrease in the density of ionized donors in the uncovered portion results in the reversible increase in mobility.

  16. Evaluation of algal biofilms on indium tin oxide (ITO for use in biophotovoltaic platforms based on photosynthetic performance.

    Directory of Open Access Journals (Sweden)

    Fong-Lee Ng

    Full Text Available In photosynthesis, a very small amount of the solar energy absorbed is transformed into chemical energy, while the rest is wasted as heat and fluorescence. This excess energy can be harvested through biophotovoltaic platforms to generate electrical energy. In this study, algal biofilms formed on ITO anodes were investigated for use in the algal biophotovoltaic platforms. Sixteen algal strains, comprising local isolates and two diatoms obtained from the Culture Collection of Marine Phytoplankton (CCMP, USA, were screened and eight were selected based on the growth rate, biochemical composition and photosynthesis performance using suspension cultures. Differences in biofilm formation between the eight algal strains as well as their rapid light curve (RLC generated using a pulse amplitude modulation (PAM fluorometer, were examined. The RLC provides detailed information on the saturation characteristics of electron transport and overall photosynthetic performance of the algae. Four algal strains, belonging to the Cyanophyta (Cyanobacteria Synechococcus elongatus (UMACC 105, Spirulina platensis. (UMACC 159 and the Chlorophyta Chlorella vulgaris (UMACC 051, and Chlorella sp. (UMACC 313 were finally selected for investigation using biophotovoltaic platforms. Based on power output per Chl-a content, the algae can be ranked as follows: Synechococcus elongatus (UMACC 105 (6.38×10(-5 Wm(-2/µgChl-a>Chlorella vulgaris UMACC 051 (2.24×10(-5 Wm(-2/µgChl-a>Chlorella sp.(UMACC 313 (1.43×10(-5 Wm(-2/µgChl-a>Spirulina platensis (UMACC 159 (4.90×10(-6 Wm(-2/µgChl-a. Our study showed that local algal strains have potential for use in biophotovoltaic platforms due to their high photosynthetic performance, ability to produce biofilm and generation of electrical power.

  17. Highly sensitive and selective voltammetric detection of mercury(II) using an ITO electrode modified with 5-methyl-2-thiouracil, graphene oxide and gold nanoparticles

    International Nuclear Information System (INIS)

    Zhou, N.; Chen, H.; Li, J.; Chen, L.

    2013-01-01

    We have developed an electrochemical sensor for highly selective and sensitive determination of Hg(II). It is based on the specific binding of 5-methyl-2-thiouracil (MTU) and Hg(II) to the surface of an indium tin oxide (ITO) electrode modified with a composite made from graphene oxide (GO) and gold nanoparticles (AuNPs). This leads to a largely enhanced differential pulse voltammetric response for Hg(II). Following optimization of the method, a good linear relationship (R = 0.9920) is found between peak current and the concentration of Hg(II) in the 5.0-110.0 nM range. The limit of detection (LOD) is 0.78 nM at a signal-to-noise ratio of 3. A study on the interference by several metal ions revealed no interferences. The feasibility of this method was demonstrated by the analyses of real water samples. The LODs are 6.9, 1.0 and 1.9 nM for tap water, bottled water and lake water samples, respectively, and recoveries for the water samples spiked with 8.0, 50.0 and 100.0 nM were 83.9-96.8 %, with relative standard deviations ranging from 3.3 % to 5.2 %. (author)

  18. Effect of top gate potential on bias-stress for dual gate amorphous indium-gallium-zinc-oxide thin film transistor

    Energy Technology Data Exchange (ETDEWEB)

    Chun, Minkyu; Um, Jae Gwang; Park, Min Sang; Chowdhury, Md Delwar Hossain; Jang, Jin, E-mail: jjang@khu.ac.kr [Advanced Display Research Center and Department of Information Display, Kyung Hee University, Seoul 02447 (Korea, Republic of)

    2016-07-15

    We report the abnormal behavior of the threshold voltage (V{sub TH}) shift under positive bias Temperature stress (PBTS) and negative bias temperature stress (NBTS) at top/bottom gate in dual gate amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film transistors (TFTs). It is found that the PBTS at top gate shows negative transfer shift and NBTS shows positive transfer shift for both top and bottom gate sweep. The shift of bottom/top gate sweep is dominated by top gate bias (V{sub TG}), while bottom gate bias (V{sub BG}) is less effect than V{sub TG}. The X-ray photoelectron spectroscopy (XPS) depth profile provides the evidence of In metal diffusion to the top SiO{sub 2}/a-IGZO and also the existence of large amount of In{sup +} under positive top gate bias around top interfaces, thus negative transfer shift is observed. On the other hand, the formation of OH{sup −} at top interfaces under the stress of negative top gate bias shows negative transfer shift. The domination of V{sub TG} both on bottom/top gate sweep after PBTS/NBTS is obviously occurred due to thin active layer.

  19. High permittivity materials for oxide gate stack in Ge-based metal oxide semiconductor capacitors

    Energy Technology Data Exchange (ETDEWEB)

    Molle, Alessandro, E-mail: alessandro.molle@mdm.infm.i [Laboratorio Nazionale MDM, CNR-INFM, via C. Olivetti 2, 20041 Agrate Brianza, Milano (Italy); Baldovino, Silvia [Laboratorio Nazionale MDM, CNR-INFM, via C. Olivetti 2, 20041 Agrate Brianza, Milano (Italy); Dipartimento di Scienza dei Materiali, Universita degli Studi di Milano Bicocca, Milano (Italy); Spiga, Sabina [Laboratorio Nazionale MDM, CNR-INFM, via C. Olivetti 2, 20041 Agrate Brianza, Milano (Italy); Fanciulli, Marco [Laboratorio Nazionale MDM, CNR-INFM, via C. Olivetti 2, 20041 Agrate Brianza, Milano (Italy); Dipartimento di Scienza dei Materiali, Universita degli Studi di Milano Bicocca, Milano (Italy)

    2010-01-01

    In the effort to ultimately shrink the size of logic devices towards a post-Si era, the integration of Ge as alternative channel material for high-speed p-MOSFET devices and the concomitant coupling with high permittivity dielectrics (high-k) as gate oxides is currently a key-challenge in microelectronics. However, the Ge option still suffers from a number of unresolved drawbacks and open issues mainly related to the thermodynamic and electrical compatibility of Ge substrates with high-k gate stack. Strictly speaking, two main concerns can be emphasized. On one side is the dilemma on which chemical/physical passivation is more suitable to minimize the unavoidable presence of electrically active defects at the oxide/semiconductor interface. On the other side, overcoming the SiO{sub 2} gate stack opens the route to a number of potentially outperforming high-k oxides. Two deposition approaches were here separately adopted to investigate the high-k oxide growth on Ge substrates, the molecular beam deposition (MBD) of Gd{sub 2}O{sub 3} and the atomic layer deposition (ALD) of HfO{sub 2}. In the MBD framework epitaxial and amorphous Gd{sub 2}O{sub 3} films were grown onto GeO{sub 2}-passivated Ge substrates. In this case, Ge passivation was achieved by exploiting the Ge{sup 4+} bonding state in GeO{sub 2} ultra-thin interface layers intentionally deposited in between Ge and the high-k oxide by means of atomic oxygen exposure to Ge. The composition of the interface layer has been characterized as a function of the oxidation temperature and evidence of Ge dangling bonds at the GeO{sub 2}/Ge interface has been reported. Finally, the electrical response of MOS capacitors incorporating Gd{sub 2}O{sub 3} and GeO{sub 2}-passivated Ge substrates has been checked by capacitance-voltage measurements. On the other hand, the structural and electrical properties of HfO{sub 2} films grown by ALD on Ge by using different oxygen precursors, i.e. H{sub 2}O, Hf(O{sup t}Bu){sub 2}(mmp

  20. Thermal oxidation of seeds for the hydrothermal growth of WO{sub 3} nanorods on ITO glass substrate

    Energy Technology Data Exchange (ETDEWEB)

    Ng, Chai Yan [School of Materials and Mineral Resources Engineering, Universiti Sains Malaysia, 14300 Nibong Tebal, Penang (Malaysia); Department of Mechanical and Material Engineering, Lee Kong Chian Faculty of Engineering and Science, Universiti Tunku Abdul Rahman, Jalan Sungai Long, Bandar Sungai Long, Cheras, 43000 Kajang, Selangor (Malaysia); Abdul Razak, Khairunisak, E-mail: khairunisak@usm.my [School of Materials and Mineral Resources Engineering, Universiti Sains Malaysia, 14300 Nibong Tebal, Penang (Malaysia); NanoBiotechnology Research and Innovation (NanoBRI), Institute for Research in Molecular Medicine (INFORMM), Universiti Sains Malaysia, 11800 USM, Penang (Malaysia); Lockman, Zainovia, E-mail: zainovia@usm.my [School of Materials and Mineral Resources Engineering, Universiti Sains Malaysia, 14300 Nibong Tebal, Penang (Malaysia)

    2015-11-30

    This work reports a simple seed formation method for the hydrothermal growth of tungsten oxide (WO{sub 3}) nanorods. A WO{sub 3} seed layer was prepared by thermal oxidation, where a W-sputtered substrate was heated and oxidized in a furnace. Oxidation temperatures and periods were varied at 400–550 °C and 5–60 min, respectively, to determine an appropriate seed layer for nanorod growth. Thermal oxidation at 500 °C for 15 min was found to produce a seed layer with sufficient crystallinity and good adhesion to the substrate. These properties prevented the seed from peeling off during the hydrothermal process, thereby allowing nanorod growth on the seed. The nanorod film showed better electrochromic behavior (higher current density of − 1.11 and + 0.65 mA cm{sup −2}) than compact film (lower current density of − 0.54 and + 0.28 mA cm{sup −2}). - Highlights: • A simple seed formation method (thermal oxidation) on sputtered W film is reported. • Crystalline seed with good adhesion to substrate is required for nanorod growth. • The appropriate temperature and period for seed formation were 500 °C and 15 min. • WO{sub 3} nanorods exhibited higher electrochromic current density than WO{sub 3} compact film.

  1. Reliability study of ultra-thin gate oxides on strained-Si/SiGe MOS structures

    International Nuclear Information System (INIS)

    Varzgar, John B.; Kanoun, Mehdi; Uppal, Suresh; Chattopadhyay, Sanatan; Tsang, Yuk Lun; Escobedo-Cousins, Enrique; Olsen, Sarah H.; O'Neill, Anthony; Hellstroem, Per-Erik; Edholm, Jonas; Ostling, Mikael; Lyutovich, Klara; Oehme, Michael; Kasper, Erich

    2006-01-01

    The reliability of gate oxides on bulk Si and strained Si (s-Si) has been evaluated using constant voltage stressing (CVS) to investigate their breakdown characteristics. The s-Si architectures exhibit a shorter life time compared to that of bulk Si, which is attributed to higher bulk oxide charges (Q ox ) and increased surface roughness in the s-Si structures. The gate oxide in the s-Si structure exhibits a hard breakdown (HBD) at 1.9 x 10 4 s, whereas HBD is not observed in bulk Si up to a measurement period of 1.44 x 10 5 s. The shorter lifetime of the s-Si gate oxide is attributed to a larger injected charge (Q inj ) compared to Q inj in bulk Si. Current-voltage (I-V) measurements for bulk Si samples at different stress intervals show an increase in stress induced leakage current (SILC) of two orders in the low voltage regime from zero stress time to up to 5 x 10 4 s. In contrast, superior performance enhancements in terms of drain current, maximum transconductance and effective channel mobility are observed in s-Si MOSFET devices compared to bulk Si. The results from this study indicate that further improvement in gate oxide reliability is needed to exploit the sustained performance enhancement of s-Si devices over bulk Si

  2. Surface passivation function of indium-tin-oxide-based nanorod structural sensors

    International Nuclear Information System (INIS)

    Lin, Tzu-Shun; Lee, Ching-Ting; Lee, Hisn-Ying; Lin, Chih-Chien

    2012-01-01

    Employing self-shadowing traits of an oblique-angle electron-beam deposition system, various indium tin oxide (ITO) nanorod arrays were deposited on a silicon substrate and used as extended-gate field-effect-transistor (EGFET) pH sensors. The length and morphology of the deposited ITO nanorod arrays could be changed and controlled under different deposition conditions. The ITO nanorod structural EGFET pH sensors exhibited high sensing performances owing to the larger sensing surface area. The sensitivity of the pH sensors with 150-nm-length ITO nanorod arrays was 53.96 mV/pH. By using the photoelectrochemical treatment of the ITO nanorod arrays, the sensitivity of the pH sensors with 150-nm-length passivated ITO nanorod arrays was improved to 57.21 mV/pH.

  3. Degradation of ultra-thin gate oxide LDD NMOSFET under GIDL stress

    International Nuclear Information System (INIS)

    Hu Shigang; Hao Yue; Cao Yanrong; Ma Xiaohua; Wu Xiaofeng; Chen Chi; Zhou Qingjun

    2009-01-01

    The degradation of device under GIDL (gate-induced drain leakage current) stress has been studied using LDD NMOSFETs with 1.4 nm gate oxides. Experimental result shows that the degradation of device parameters depends more strongly on V d than on V g . The characteristics of the GIDL current are used to analyze the damage generated during the stress. It is clearly found that the change of GIDL current before and after stress can be divided into two stages. The trapping of holes in the oxide is dominant in the first stage, but that of electrons in the oxide is dominant in the second stage. It is due to the common effects of edge direct tunneling and band-to-band tunneling. SILC (stress induced leakage current) in the NMOSFET decreases with increasing stress time under GIDL stress. The degradation characteristic of SILC also shows saturating time dependence. SILC is strongly dependent on the measured gate voltage. The higher the measured gate voltage, the less serious the degradation of the gate current. A likely mechanism is presented to explain the origin of SILC during GIDL stress.

  4. Atomic-Layer-Deposited SnO2 as Gate Electrode for Indium-Free Transparent Electronics

    KAUST Repository

    Alshammari, Fwzah Hamud; Hota, Mrinal Kanti; Wang, Zhenwei; Aljawhari, Hala; Alshareef, Husam N.

    2017-01-01

    Atomic-layer-deposited SnO2 is used as a gate electrode to replace indium tin oxide (ITO) in thin-film transistors and circuits for the first time. The SnO2 films deposited at 200 °C show low electrical resistivity of ≈3.1 × 10−3 Ω cm with ≈93

  5. Pulsed laser deposition of ITO thin films and their characteristics

    International Nuclear Information System (INIS)

    Zuev, D. A.; Lotin, A. A.; Novodvorsky, O. A.; Lebedev, F. V.; Khramova, O. D.; Petuhov, I. A.; Putilin, Ph. N.; Shatohin, A. N.; Rumyanzeva, M. N.; Gaskov, A. M.

    2012-01-01

    The indium tin oxide (ITO) thin films are grown on quartz glass substrates by the pulsed laser deposition method. The structural, electrical, and optical properties of ITO films are studied as a function of the substrate temperature, the oxygen pressure in the vacuum chamber, and the Sn concentration in the target. The transmittance of grown ITO films in the visible spectral region exceeds 85%. The minimum value of resistivity 1.79 × 10 −4 Ω cm has been achieved in the ITO films with content of Sn 5 at %.

  6. Single-electron-occupation metal-oxide-semiconductor quantum dots formed from efficient poly-silicon gate layout

    Energy Technology Data Exchange (ETDEWEB)

    Carroll, Malcolm S.; rochette, sophie; Rudolph, Martin; Roy, A. -M.; Curry, Matthew Jon; Ten Eyck, Gregory A.; Manginell, Ronald P.; Wendt, Joel R.; Pluym, Tammy; Carr, Stephen M; Ward, Daniel Robert; Lilly, Michael; pioro-ladriere, michel

    2017-07-01

    We introduce a silicon metal-oxide-semiconductor quantum dot structure that achieves dot-reservoir tunnel coupling control without a dedicated barrier gate. The elementary structure consists of two accumulation gates separated spatially by a gap, one gate accumulating a reservoir and the other a quantum dot. Control of the tunnel rate between the dot and the reservoir across the gap is demonstrated in the single electron regime by varying the reservoir accumulation gate voltage while compensating with the dot accumulation gate voltage. The method is then applied to a quantum dot connected in series to source and drain reservoirs, enabling transport down to the single electron regime. Finally, tuning of the valley splitting with the dot accumulation gate voltage is observed. This split accumulation gate structure creates silicon quantum dots of similar characteristics to other realizations but with less electrodes, in a single gate stack subtractive fabrication process that is fully compatible with silicon foundry manufacturing.

  7. Electrostatically Gated Graphene-Zinc Oxide Nanowire Heterojunction.

    Science.gov (United States)

    You, Xueqiu; Pak, James Jungho

    2015-03-01

    This paper presents an electrostatically gated graphene-ZnO nanowire (NW) heterojunction for the purpose of device applications for the first time. A sub-nanometer-thick energy barrier width was formed between a monatomic graphene layer and electrochemically grown ZnO NWs. Because of the narrow energy barrier, electrons can tunnel through the barrier when a voltage is applied across the junction. A near-ohmic current-voltage (I-V) curve was obtained from the graphene-electrochemically grown ZnO NW heterojunction. This near-ohmic contact changed to asymmetric I-V Schottky contact when the samples were exposed to an oxygen environment. It is believed that the adsorbed oxygen atoms or molecules on the ZnO NW surface capture free electrons of the ZnO NWs, thereby creating a depletion region in the ZnO NWs. Consequentially, the electron concentration in the ZnO NWs is dramatically reduced, and the energy barrier width of the graphene-ZnO NW heterojunction increases greatly. This increased energy barrier width reduces the electron tunneling probability, resulting in a typical Schottky contact. By adjusting the back-gate voltage to control the graphene-ZnO NW Schottky energy barrier height, a large modulation on the junction current (on/off ratio of 10(3)) was achieved.

  8. Solvothermal synthesis of gallium-indium-zinc-oxide nanoparticles for electrolyte-gated transistors.

    Science.gov (United States)

    Santos, Lídia; Nunes, Daniela; Calmeiro, Tomás; Branquinho, Rita; Salgueiro, Daniela; Barquinha, Pedro; Pereira, Luís; Martins, Rodrigo; Fortunato, Elvira

    2015-01-14

    Solution-processed field-effect transistors are strategic building blocks when considering low-cost sustainable flexible electronics. Nevertheless, some challenges (e.g., processing temperature, reliability, reproducibility in large areas, and cost effectiveness) are requirements that must be surpassed in order to achieve high-performance transistors. The present work reports electrolyte-gated transistors using as channel layer gallium-indium-zinc-oxide nanoparticles produced by solvothermal synthesis combined with a solid-state electrolyte based on aqueous dispersions of vinyl acetate stabilized with cellulose derivatives, acrylic acid ester in styrene and lithium perchlorate. The devices fabricated using this approach display a ION/IOFF up to 1 × 10(6), threshold voltage (VTh) of 0.3-1.9 V, and mobility up to 1 cm(2)/(V s), as a function of gallium-indium-zinc-oxide ink formulation and two different annealing temperatures. These results validates the usage of electrolyte-gated transistors as a viable and promising alternative for nanoparticle based semiconductor devices as the electrolyte improves the interface and promotes a more efficient step coverage of the channel layer, reducing the operating voltage when compared with conventional dielectrics gating. Moreover, it is shown that by controlling the applied gate potential, the operation mechanism of the electrolyte-gated transistors can be modified from electric double layer to electrochemical doping.

  9. Design of Higher-k and More Stable Rare Earth Oxides as Gate Dielectrics for Advanced CMOS Devices

    Directory of Open Access Journals (Sweden)

    Yi Zhao

    2012-08-01

    Full Text Available High permittivity (k gate dielectric films are widely studied to substitute SiO2 as gate oxides to suppress the unacceptable gate leakage current when the traditional SiO2 gate oxide becomes ultrathin. For high-k gate oxides, several material properties are dominantly important. The first one, undoubtedly, is permittivity. It has been well studied by many groups in terms of how to obtain a higher permittivity for popular high-k oxides, like HfO2 and La2O3. The second one is crystallization behavior. Although it’s still under the debate whether an amorphous film is definitely better than ploy-crystallized oxide film as a gate oxide upon considering the crystal boundaries induced leakage current, the crystallization behavior should be well understood for a high-k gate oxide because it could also, to some degree, determine the permittivity of the high-k oxide. Finally, some high-k gate oxides, especially rare earth oxides (like La2O3, are not stable in air and very hygroscopic, forming hydroxide. This topic has been well investigated in over the years and significant progresses have been achieved. In this paper, I will intensively review the most recent progresses of the experimental and theoretical studies for preparing higher-k and more stable, in terms of hygroscopic tolerance and crystallization behavior, Hf- and La-based ternary high-k gate oxides.

  10. Scaling up ITO-Free solar cells

    NARCIS (Netherlands)

    Galagan, Y.O.; Coenen, E.W.C.; Zimmermann, B.; Slooff, L.H.; Verhees, W.J.H.; Veenstra, S.C.; Kroon, J.M.; Jørgensen, M.; Krebs, F.C.; Andriessen, H.A.J.M.

    2014-01-01

    Indium-tin-oxide-free (ITO-free) polymer solar cells with composite electrodes containing current-collecting grids and a semitransparent poly(3,4-ethylenedioxythiophene):polystyrenesulfonate) (PEDOT:PSS) conductor are demonstrated. The up-scaling of the length of the solar cell from 1 to 6 cm and

  11. Hydrogen ion sensors based on indium tin oxide thin film using radio frequency sputtering system

    International Nuclear Information System (INIS)

    Chiang, Jung-Lung; Jhan, Syun-Sheng; Hsieh, Shu-Chen; Huang, An-Li

    2009-01-01

    Indium tin oxide (ITO) thin films were deposited onto Si and SiO 2 /Si substrates using a radio frequency sputtering system with a grain size of 30-50 nm and thickness of 270-280 nm. ITO/Si and ITO/SiO 2 /Si sensing structures were achieved and connected to a standard metal-oxide-semiconductor field-effect transistor (MOSFET) as an ITO pH extended-gate field-effect transistor (ITO pH-EGFET). The semiconductor parameter analysis measurement (Keithley 4200) was utilized to measure the current-voltage (I-V) characteristics curves and study the sensing properties of the ITO pH-EGFET. The linear pH voltage sensitivities were about 41.43 and 43.04 mV/pH for the ITO/Si and ITO/SiO 2 /Si sensing structures, respectively. At the same time, both pH current sensitivities were about 49.86 and 51.73 μA/pH, respectively. Consequently, both sensing structures can be applied as extended-gate sensing heads. The separative structure is suitable for application as a disposable pH sensor.

  12. Degradation of Ultra-Thin Gate Oxide NMOSFETs under CVDT and SHE Stresses

    International Nuclear Information System (INIS)

    Shi-Gang, Hu; Yan-Rong, Cao; Yue, Hao; Xiao-Hua, Ma; Chi, Chen; Xiao-Feng, Wu; Qing-Jun, Zhou

    2008-01-01

    Degradation of device under substrate hot-electron (SHE) and constant voltage direct-tunnelling (CVDT) stresses are studied using NMOSFET with 1.4-nm gate oxides. The degradation of device parameters and the degradation of the stress induced leakage current (SILC) under these two stresses are reported. The emphasis of this paper is on SILC and breakdown of ultra-thin-gate-oxide under these two stresses. SILC increases with stress time and several soft breakdown events occur during direct-tunnelling (DT) stress. During SHE stress, SILC firstly decreases with stress time and suddenly jumps to a high level, and no soft breakdown event is observed. For DT injection, the positive hole trapped in the oxide and hole direct-tunnelling play important roles in the breakdown. For SHE injection, it is because injected hot electrons accelerate the formation of defects and these defects formed by hot electrons induce breakdown. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

  13. High performance solution processed zirconium oxide gate dielectric appropriate for low temperature device application

    Energy Technology Data Exchange (ETDEWEB)

    Hasan, Musarrat; Nguyen, Manh-Cuong; Kim, Hyojin; You, Seung-Won; Jeon, Yoon-Seok; Tong, Duc-Tai; Lee, Dong-Hwi; Jeong, Jae Kyeong; Choi, Rino, E-mail: rino.choi@inha.ac.kr

    2015-08-31

    This paper reports a solution processed electrical device with zirconium oxide gate dielectric that was fabricated at a low enough temperature appropriate for flexible electronics. Both inorganic dielectric and channel materials were synthesized in the same organic solvent. The dielectric constant achieved was 13 at 250 °C with a reasonably low leakage current. The bottom gate transistor devices showed the highest mobility of 75 cm{sup 2}/V s. The device is operated at low voltage with high-k dielectric with excellent transconductance and low threshold voltage. Overall, the results highlight the potential of low temperature solution based deposition in fabricating more complicated circuits for a range of applications. - Highlights: • We develop a low temperature inorganic dielectric deposition process. • We fabricate oxide semiconductor channel devices using all-solution processes. • Same solvent is used for dielectric and oxide semiconductor deposition.

  14. Scaling Up ITO-free solar cells

    DEFF Research Database (Denmark)

    Galagan, Yulia; Coenen, Erica W. C.; Zimmermann, Birger

    2014-01-01

    Indium-tin-oxide-free (ITO-free) polymer solar cells with composite electrodes containing current-collecting grids and a semitransparent poly(3,4-ethylenedioxythiophene):polystyrenesulfonate) (PEDOT:PSS) conductor are demonstrated. The up-scaling of the length of the solar cell from 1 to 6 cm...... resistances. The performance of ITO-free organic solar cells with different dimensions and different electrode resistances are evaluated for different light intensities. The current generation and electric potential distribution are found to not be uniformly distributed in large-area devices at simulated 1...

  15. The effects of gate oxide thickness on radiation damage in MOS system

    International Nuclear Information System (INIS)

    Zhu Hui; Yan Rongliang; Wang Yu; He Jinming

    1988-01-01

    The dependences of the flatband voltage shift (ΔV FB ) and the threshold voltage shift (ΔV TH ) in MOS system on the oxide thickness (T ox ) and on total irradiated dose (D) of electron-beam and 60 Co γ-ray have been studied. It has been found that ΔV FB ∝ T ox 3 , with +10V of gate bias during irradiation for n-Si substrate MOS capacitors; ΔV TH ∝ T ox 3 D 2/3 , with 'on' gate bias during irradiation for n- and P-channel MOS transistors; ΔV TP ∝ T ox 2 D 2/3 , with 'off' gate bias during irradiation for P-channel MOS transistors. These results are explained by Viswanathan model. According to ∼T ox 3 dependence, the optimization of radiation hardening process for MOS system is also simply discussed

  16. High stability and high activity Pd/ITO-CNTs electrocatalyst for direct formic acid fuel cell

    International Nuclear Information System (INIS)

    Qu, Wei-Li; Gu, Da-Ming; Wang, Zhen-Bo; Zhang, Jing-Jia

    2014-01-01

    Graphical abstract: The addition of ITO in Pd/CNTs catalyst significantly improves the activity and stability of catalyst for formic acid electrooxidation due to excellent stability and high electrical conductivity of ITO, and metal-support interaction between Pd nanoparticles and ITO. - Highlights: • Pd catalyst with ITO and CNTs as a mixture support for DFAFC was first prepared by microwave-assisted polyol process. • The activity and stability of Pd/ITO-CNTs catalyst is significantly higher than those of Pd/CNTs. • When ITO content is 50% of ITO/CNTs support mass, Pd/ITO-CNTs exhibits the best performance. - Abstract: Indium tin oxide (ITO) and carbon nanotube hybrid has been explored as a support for Pd catalyst. Pd/ITO-CNTs catalysts with different ITO contents were prepared by the microwave-assisted polyol process. The as-prepared Pd/ITO-CNTs catalysts were characterized by X-ray diffraction (XRD), energy dispersive analysis of X-ray (EDAX), X-ray photoelectron spectroscopy (XPS), transmission electron microscopy (TEM), high resolution transmission electron microscopy (HRTEM), and electrochemical measurements in this work. The TEM results show that Pd particle size distribution in the Pd/ITO-CNTs catalyst is more uniform than that in Pd/CNTs, indicating that the ITO can promote the dispersion of Pd nanoparticles. It is found that there is metal-support interaction between Pd nanoparticles and ITO in the Pd/ITO-CNTs catalyst through XPS test. The results of electrochemical tests prove that the Pd/ITO-CNTs catalysts exhibit higher electro-catalytic activity and stability than Pd/CNTs toward formic acid electrooxidation. When the ITO content is 50% of ITO-CNTs support mass, the Pd/ITO-CNTs catalyst has the best catalytic performance for formic acid electrooxidation. The peak current density of formic acid electrooxidation on the Pd/ITO-CNTs50% electrode is 1.53 times as high as that on Pd/CNTs, 2.31 times higher than that on Pd/ITO. The results of aging

  17. ZnO nanowire-based nano-floating gate memory with Pt nanocrystals embedded in Al{sub 2}O{sub 3} gate oxides

    Energy Technology Data Exchange (ETDEWEB)

    Yeom, Donghyuk; Kang, Jeongmin; Lee, Myoungwon; Jang, Jaewon; Yun, Junggwon; Jeong, Dong-Young; Yoon, Changjoon; Koo, Jamin; Kim, Sangsig [Department of Electrical Engineering and Institute for Nano Science, Korea University, Seoul 136-701 (Korea, Republic of)], E-mail: sangsig@korea.ac.kr

    2008-10-01

    The memory characteristics of ZnO nanowire-based nano-floating gate memory (NFGM) with Pt nanocrystals acting as the floating gate nodes were investigated in this work. Pt nanocrystals were embedded between Al{sub 2}O{sub 3} tunneling and control oxide layers deposited on ZnO nanowire channels. For a representative ZnO nanowire-based NFGM with embedded Pt nanocrystals, a threshold voltage shift of 3.8 V was observed in its drain current versus gate voltage (I{sub DS}-V{sub GS}) measurements for a double sweep of the gate voltage, revealing that the deep effective potential wells built into the nanocrystals provide our NFGM with a large charge storage capacity. Details of the charge storage effect observed in this memory device are discussed in this paper.

  18. ZnO nanowire-based nano-floating gate memory with Pt nanocrystals embedded in Al2O3 gate oxides

    International Nuclear Information System (INIS)

    Yeom, Donghyuk; Kang, Jeongmin; Lee, Myoungwon; Jang, Jaewon; Yun, Junggwon; Jeong, Dong-Young; Yoon, Changjoon; Koo, Jamin; Kim, Sangsig

    2008-01-01

    The memory characteristics of ZnO nanowire-based nano-floating gate memory (NFGM) with Pt nanocrystals acting as the floating gate nodes were investigated in this work. Pt nanocrystals were embedded between Al 2 O 3 tunneling and control oxide layers deposited on ZnO nanowire channels. For a representative ZnO nanowire-based NFGM with embedded Pt nanocrystals, a threshold voltage shift of 3.8 V was observed in its drain current versus gate voltage (I DS -V GS ) measurements for a double sweep of the gate voltage, revealing that the deep effective potential wells built into the nanocrystals provide our NFGM with a large charge storage capacity. Details of the charge storage effect observed in this memory device are discussed in this paper

  19. High performance top-gated indium–zinc–oxide thin film transistors with in-situ formed HfO{sub 2} gate insulator

    Energy Technology Data Exchange (ETDEWEB)

    Song, Yang, E-mail: yang_song@brown.edu [Department of Physics, Brown University, 182 Hope Street, Providence, RI 02912 (United States); Zaslavsky, A. [Department of Physics, Brown University, 182 Hope Street, Providence, RI 02912 (United States); School of Engineering, Brown University, 184 Hope Street, Providence, RI 02912 (United States); Paine, D.C. [School of Engineering, Brown University, 184 Hope Street, Providence, RI 02912 (United States)

    2016-09-01

    We report on top-gated indium–zinc–oxide (IZO) thin film transistors (TFTs) with an in-situ formed HfO{sub 2} gate dielectric insulator. Building on our previous demonstration of high-performance IZO TFTs with Al{sub 2}O{sub 3}/HfO{sub 2} gate dielectric, we now report on a one-step process, in which Hf is evaporated onto the 20 nm thick IZO channel, forming a partially oxidized HfO{sub x} layer, without any additional insulator in-between. After annealing in air at 300 °C, the in-situ reaction between partially oxidized Hf and IZO forms a high quality HfO{sub 2} gate insulator with a low interface trapped charge density N{sub TC} ~ 2.3 × 10{sup 11} cm{sup −2} and acceptably low gate leakage < 3 × 10{sup −7} A/cm{sup 2} at gate voltage V{sub G} = 1 V. The annealed TFTs with gate length L{sub G} = 50 μm have high mobility ~ 95 cm{sup 2}/V ∙ s (determined via the Y-function technique), high on/off ratio ~ 10{sup 7}, near-zero threshold voltage V{sub T} = − 0.02 V, and a subthreshold swing of 0.062 V/decade, near the theoretical limit. The on-current of our proof-of-concept TFTs is relatively low, but can be improved by reducing L{sub G}, indicating that high-performance top-gated HfO{sub 2}-isolated IZO TFTs can be fabricated using a single-step in-situ dielectric formation approach. - Highlights: • High-performance indium–zinc–oxide (IZO) thin film transistors (TFTs). • Single-step in-situ dielectric formation approach simplifies fabrication process. • During anneal, reaction between HfO{sub x} and IZO channel forms a high quality HfO{sub 2} layer. • Gate insulator HfO{sub 2} shows low interface trapped charge and small gate leakage. • TFTs have high mobility, near-zero threshold voltage, and a low subthreshold swing.

  20. Electrical circuit model of ITO/AZO/Ge photodetector

    Directory of Open Access Journals (Sweden)

    Malkeshkumar Patel

    2017-10-01

    Full Text Available In this data article, ITO/AZO/Ge photodetector was investigated for electrical circuit model. Due to the double (ITO and AZO transparent metal-oxide films (DOI:10.1016/j.mssp.2016.03.007 (Yun et al., 2016 [1], the Ge heterojunction device has a better interface quality due to the AZO layer with a low electrical resistance due to the ITO layer (Yun et al., 2015 [2]. The electrical and interfacial benefitted ITO/AZO/Ge heterojunction shows the quality Schottky junction. In order to investigate the device, the ITO/AZO/Ge heterojunction was analyzed by R–C circuit model using the impedance spectroscopy.

  1. Comprehensive Study of Lanthanum Aluminate High-Dielectric-Constant Gate Oxides for Advanced CMOS Devices

    Directory of Open Access Journals (Sweden)

    Masamichi Suzuki

    2012-03-01

    Full Text Available A comprehensive study of the electrical and physical characteristics of Lanthanum Aluminate (LaAlO3 high-dielectric-constant gate oxides for advanced CMOS devices was performed. The most distinctive feature of LaAlO3 as compared with Hf-based high-k materials is the thermal stability at the interface with Si, which suppresses the formation of a low-permittivity Si oxide interfacial layer. Careful selection of the film deposition conditions has enabled successful deposition of an LaAlO3 gate dielectric film with an equivalent oxide thickness (EOT of 0.31 nm. Direct contact with Si has been revealed to cause significant tensile strain to the Si in the interface region. The high stability of the effective work function with respect to the annealing conditions has been demonstrated through comparison with Hf-based dielectrics. It has also been shown that the effective work function can be tuned over a wide range by controlling the La/(La + Al atomic ratio. In addition, gate-first n-MOSFETs with ultrathin EOT that use sulfur-implanted Schottky source/drain technology have been fabricated using a low-temperature process.

  2. Comparative studies of MOS-gate/oxide-passivated AlGaAs/InGaAs pHEMTs by using ozone water oxidation technique

    International Nuclear Information System (INIS)

    Lee, Ching-Sung; Hung, Chun-Tse; Chou, Bo-Yi; Hsu, Wei-Chou; Liu, Han-Yin; Ho, Chiu-Sheng; Lai, Ying-Nan

    2012-01-01

    Al 0.22 Ga 0.78 As/In 0.24 Ga 0.76 As pseudomorphic high-electron-mobility transistors (pHEMTs) with metal-oxide-semiconductor (MOS)-gate structure or oxide passivation by using ozone water oxidation treatment have been comprehensively investigated. Annihilated surface states, enhanced gate insulating property and improved device gain have been achieved by the devised MOS-gate structure and oxide passivation. The present MOS-gated or oxide-passivated pHEMTs have demonstrated superior device performances, including superior breakdown, device gain, noise figure, high-frequency characteristics and power performance. Temperature-dependent device characteristics of the present designs at 300–450 K are also studied. (paper)

  3. Electronic States of High-k Oxides in Gate Stack Structures

    Science.gov (United States)

    Zhu, Chiyu

    In this dissertation, in-situ X-ray and ultraviolet photoemission spectroscopy have been employed to study the interface chemistry and electronic structure of potential high-k gate stack materials. In these gate stack materials, HfO2 and La2O3 are selected as high-k dielectrics, VO2 and ZnO serve as potential channel layer materials. The gate stack structures have been prepared using a reactive electron beam system and a plasma enhanced atomic layer deposition system. Three interrelated issues represent the central themes of the research: 1) the interface band alignment, 2) candidate high-k materials, and 3) band bending, internal electric fields, and charge transfer. 1) The most highlighted issue is the band alignment of specific high-k structures. Band alignment relationships were deduced by analysis of XPS and UPS spectra for three different structures: a) HfO2/VO2/SiO2/Si, b) HfO 2-La2O3/ZnO/SiO2/Si, and c) HfO 2/VO2/ HfO2/SiO2/Si. The valence band offset of HfO2/VO2, ZnO/SiO2 and HfO 2/SiO2 are determined to be 3.4 +/- 0.1, 1.5 +/- 0.1, and 0.7 +/- 0.1 eV. The valence band offset between HfO2-La2O3 and ZnO was almost negligible. Two band alignment models, the electron affinity model and the charge neutrality level model, are discussed. The results show the charge neutrality model is preferred to describe these structures. 2) High-k candidate materials were studied through comparison of pure Hf oxide, pure La oxide, and alloyed Hf-La oxide films. An issue with the application of pure HfO2 is crystallization which may increase the leakage current in gate stack structures. An issue with the application of pure La2O3 is the presence of carbon contamination in the film. Our study shows that the alloyed Hf-La oxide films exhibit an amorphous structure along with reduced carbon contamination. 3) Band bending and internal electric fields in the gate stack structure were observed by XPS and UPS and indicate the charge transfer during the growth and process. The oxygen

  4. Influence of implantation energy on the electrical properties of ultrathin gate oxides grown on nitrogen implanted Si substrates

    International Nuclear Information System (INIS)

    Kapetanakis, E.; Skarlatos, D.; Tsamis, C.; Normand, P.; Tsoukalas, D.

    2003-01-01

    Metal-oxide-semiconductor tunnel diodes with gate oxides, in the range of 2.5-3.5 nm, grown either on 25 or 3 keV nitrogen-implanted Si substrates at (0.3 or 1) x10 15 cm -2 dose, respectively, are investigated. The dependence of N 2 + ion implant energy on the electrical quality of the growing oxide layers is studied through capacitance, equivalent parallel conductance, and gate current measurements. Superior electrical characteristics in terms of interface state trap density, leakage current, and breakdown fields are found for oxides obtained through 3 keV nitrogen implants. These findings together with the full absence of any extended defect in the silicon substrate make the low-energy nitrogen implantation technique an attractive option for reproducible low-cost growth of nanometer-thick gate oxides

  5. Performance of organic field effect transistors with high-k gate oxide after application of consecutive bias stress

    Energy Technology Data Exchange (ETDEWEB)

    Lee, Sunwoo; Choi, Changhwan; Lee, Kilbock [Department of Materials Science and Engineering, Hanyang University, Seoul, 133-791 (Korea, Republic of); Cho, Joong Hwee [Department of Embedded Systems Engineering,University of Incheon, Incheon 406-722 (Korea, Republic of); Ko, Ki-Young [Korea Institute of Patent Information, Seoul, 146-8 (Korea, Republic of); Ahn, Jinho, E-mail: jhahn@hanyang.ac.kr [Department of Materials Science and Engineering, Hanyang University, Seoul, 133-791 (Korea, Republic of)

    2012-10-30

    We report the effect of consecutive electrical stress on the performance of organic field effect transistors (OFETs). Sputtered aluminum oxide (Al{sub 2}O{sub 3}) and hafnium oxide (HfO{sub 2}) were used as gate oxide layers. After the electrical stress, the threshold voltage, which strongly depends on bulk defects, was remarkably shifted to the negative direction, while the other performance characteristics of OFETs such as on-current, transconductance and mobility, which are sensitive to interface defects, were slightly decreased. This result implies that the defects in the bulk layer are significantly affected compared to the defects in the interface layer. Thus, it is important to control the defects in the pentacene bulk layer in order to maintain the good reliabilities of pentacene devices. Those defects in HfO{sub 2} gate oxide devices were larger compared to those in Al{sub 2}O{sub 3} gate oxide devices.

  6. Influence of ITO patterning on reliability of organic light emitting devices

    International Nuclear Information System (INIS)

    Wang, Zhaokui; Naka, Shigeki; Okada, Hiroyuki

    2009-01-01

    Indium tin oxide (ITO) films are widely used for a transparent electrode of organic light emitting devices (OLEDs) because of its excellent conductivity and transparency. Two types of ITO substrates with different surface roughness were selected to use as anode of OLEDs. In addition, two types of etching process of ITO substrate, particularly the etching time, were also carried out. It was found that the surface roughness and/or the etching process of ITO substrate strongly influenced on an edge of ITO surface, further affected the operating characteristics and reliability of devices.

  7. Proton Conducting Graphene Oxide/Chitosan Composite Electrolytes as Gate Dielectrics for New-Concept Devices.

    Science.gov (United States)

    Feng, Ping; Du, Peifu; Wan, Changjin; Shi, Yi; Wan, Qing

    2016-09-30

    New-concept devices featuring the characteristics of ultralow operation voltages and low fabrication cost have received increasing attention recently because they can supplement traditional Si-based electronics. Also, organic/inorganic composite systems can offer an attractive strategy to combine the merits of organic and inorganic materials into promising electronic devices. In this report, solution-processed graphene oxide/chitosan composite film was found to be an excellent proton conducting electrolyte with a high specific capacitance of ~3.2 μF/cm 2 at 1.0 Hz, and it was used to fabricate multi-gate electric double layer transistors. Dual-gate AND logic operation and two-terminal diode operation were realized in a single device. A two-terminal synaptic device was proposed, and some important synaptic behaviors were emulated, which is interesting for neuromorphic systems.

  8. Anomalous positive flatband voltage shifts in metal gate stacks containing rare-earth oxide capping layers

    KAUST Repository

    Caraveo-Frescas, J. A.

    2012-03-09

    It is shown that the well-known negative flatband voltage (VFB) shift, induced by rare-earth oxide capping in metal gate stacks, can be completely reversed in the absence of the silicon overlayer. Using TaN metal gates and Gd2O3-doped dielectric, we measure a ∼350 mV negative shift with the Si overlayer present and a ∼110 mV positive shift with the Si overlayer removed. This effect is correlated to a positive change in the average electrostatic potential at the TaN/dielectric interface which originates from an interfacial dipole. The dipole is created by the replacement of interfacial oxygen atoms in the HfO2 lattice with nitrogen atoms from TaN.

  9. Bipolar resistive switching behaviors of ITO nanowire networks

    Directory of Open Access Journals (Sweden)

    Qiang Li

    2016-02-01

    Full Text Available We have fabricated indium tin oxide (ITO nanowire (NW networks on aluminum electrodes using electron beam evaporation. The Ag/ITO-NW networks/Al capacitor exhibits bipolar resistive switching behavior. The resistive switching characteristics of ITO-NW networks are related to the morphology of NWs. The x-ray photoelectron spectroscopy was used to obtain the chemical nature from the NWs surface, investigating the oxygen vacancy state. A stable switching voltages and a clear memory window were observed in needle-shaped NWs. The ITO-NW networks can be used as a new two-dimensional metal oxide material for the fabrication of high-density memory devices.

  10. ITO Modification for Efficient Inverted Organic Solar Cells.

    Science.gov (United States)

    Susarova, Diana K; Akkuratov, Alexander V; Kukharenko, Andrey I; Cholakh, Seif O; Kurmaev, Ernst Z; Troshin, Pavel A

    2017-10-03

    We demonstrate a facile approach to designing transparent electron-collecting electrodes by depositing thin layers of medium and low work function metals on top of transparent conductive metal oxides (TCOs) such as ITO and FTO. The modified electrodes were fairly stable for months under ambient conditions and maintained their electrical characteristics. XPS spectroscopy data strongly suggested integration of the deposited metal in the TCO structure resulting in additional doping of the conducting oxide at the interface. Kelvin probe microscopy measurements revealed a significant decrease in the ITO work function after modification. Organic solar cells based on three different conjugated polymers have demonstrated state of the art performances in inverted device geometry using Mg- or Yb-modified ITO as electron collecting electrode. The simplicity of the proposed approach and the excellent ambient stability of the modified ITO electrodes allows one to expect their wide utilization in research laboratories and electronic industry.

  11. Synthesis of ITO Powder by Dry Process and Lifetime Characteristics of the ITO Target Fabricated with its Powder

    Science.gov (United States)

    Takahashi, Seiichiro; Itoh, Hironori; Komatsu, Ryuichi

    Lifetime of an indium tin oxide (ITO) target is an important characteristic in the production of liquid crystal displays (LCDs). Increasing the sintering density of the ITO target is assumed to lead to an increased lifetime. So far, it has been clarified that the carbon concentration in In2O3 powder, the raw material of ITO targets, influences remarkably the target lifetime. In this study, with the aim of reducing the concentration of carbon in In2O3 powder, the synthesis of In2O3 powder containing dissolved Sn by a dry process was performed.

  12. TiN/Al2O3/ZnO gate stack engineering for top-gate thin film transistors by combination of post oxidation and annealing

    Science.gov (United States)

    Kato, Kimihiko; Matsui, Hiroaki; Tabata, Hitoshi; Takenaka, Mitsuru; Takagi, Shinichi

    2018-04-01

    Control of fabrication processes for a gate stack structure with a ZnO thin channel layer and an Al2O3 gate insulator has been examined for enhancing the performance of a top-gate ZnO thin film transistor (TFT). The Al2O3/ZnO interface and the ZnO layer are defective just after the Al2O3 layer formation by atomic layer deposition. Post treatments such as plasma oxidation, annealing after the Al2O3 deposition, and gate metal formation (PMA) are promising to improve the interfacial and channel layer qualities drastically. Post-plasma oxidation effectively reduces the interfacial defect density and eliminates Fermi level pinning at the Al2O3/ZnO interface, which is essential for improving the cut-off of the drain current of TFTs. A thermal effect of post-Al2O3 deposition annealing at 350 °C can improve the crystalline quality of the ZnO layer, enhancing the mobility. On the other hand, impacts of post-Al2O3 deposition annealing and PMA need to be optimized because the annealing can also accompany the increase in the shallow-level defect density and the resulting electron concentration, in addition to the reduction in the deep-level defect density. The development of the interfacial control technique has realized the excellent TFT performance with a large ON/OFF ratio, steep subthreshold characteristics, and high field-effect mobility.

  13. Interface Study on Amorphous Indium Gallium Zinc Oxide Thin Film Transistors Using High-k Gate Dielectric Materials

    International Nuclear Information System (INIS)

    Lin, Y. H.; Chou, J. C.

    2015-01-01

    We investigated amorphous indium gallium zinc oxide (a-IGZO) thin film transistors (TFT_s) using different high-Κ gate dielectric materials such as silicon nitride (Si_3N_4) and aluminum oxide (Al_2O_3) at low temperature process (<300 degree) and compared them with low temperature silicon dioxide (SiO_2). The IGZO device with high-Κ gate dielectric material will expect to get high gate capacitance density to induce large amount of channel carrier and generate the higher drive current. In addition, for the integrating process of integrating IGZO device, post annealing treatment is an essential process for completing the process. The chemical reaction of the high-κ/IGZO interface due to heat formation in high-Κ/IGZO materials results in reliability issue. We also used the voltage stress for testing the reliability for the device with different high-Κ gate dielectric materials and explained the interface effect by charge band diagram.

  14. Pulsed laser deposition of oxide gate dielectrics for pentacene organic field-effect transistors

    International Nuclear Information System (INIS)

    Yaginuma, S.; Yamaguchi, J.; Itaka, K.; Koinuma, H.

    2005-01-01

    We have fabricated Al 2 O 3 , LaAlO 3 (LAO), CaHfO 3 (CHO) and CaZrO 3 (CZO) thin films for the dielectric layers of field-effect transistors (FETs) by pulsed laser deposition (PLD). The films exhibited very smooth surfaces with root-mean-squares (rms) roughnesses of ∼1.3 A as evaluated by using atomic force microscopy (AFM). The breakdown electric fields of Al 2 O 3 , LAO, CHO and CZO films were 7, 6, 10 and 2 MV/cm, respectively. The magnitude of the leak current in each film was low enough to operate FET. We performed a comparative study of pentacene FET fabricated using these oxide dielectrics as gate insulators. High field-effect mobility of 1.4 cm 2 /V s and on/off current ratio of 10 7 were obtained in the pentacene FET using LAO gate insulating film. Use of the LAO films as gate dielectrics has been found to suppress the hysteresis of pentacene FET operations. The LAO films are relevant to the dielectric layer of organic FETs

  15. Electrochemical characterization of organosilane-functionalized nanostructured ITO surfaces

    Energy Technology Data Exchange (ETDEWEB)

    Pruna, R., E-mail: rpruna@el.ub.edu; Palacio, F.; López, M. [SIC, Departament d' Enginyeries: Electrònica, Universitat de Barcelona, C/ Martí i Franquès 1, E-08028 Barcelona (Spain); Pérez, J. [Nanobioengineering Group, Institute for Bioengineering of Catalonia (IBEC), Baldiri Reixac 15-21, E-08028 Barcelona (Spain); Mir, M. [Nanobioengineering Group, Institute for Bioengineering of Catalonia (IBEC), Baldiri Reixac 15-21, E-08028 Barcelona (Spain); Centro de Investigación Biomédica en Red en Bioingeniería, Biomateriales y Nanomedicina (CIBER-BBN), Monforte de Lemos 3-5 Pabellón 11, E-28029 Madrid (Spain); Blázquez, O.; Hernández, S.; Garrido, B. [MIND-IN" 2UB, Departament d' Enginyeries: Electrònica, Universitat de Barcelona, C/ Martí i Franquès 1, E-08028 Barcelona (Spain)

    2016-08-08

    The electroactivity of nanostructured indium tin oxide (ITO) has been investigated for its further use in applications such as sensing biological compounds by the analysis of redox active molecules. ITO films were fabricated by using electron beam evaporation at different substrate temperatures and subsequently annealed for promoting their crystallization. The morphology of the deposited material was monitored by scanning electron microscopy, confirming the deposition of either thin films or nanowires, depending on the substrate temperature. Electrochemical surface characterization revealed a 45 % increase in the electroactive surface area of nanostructured ITO with respect to thin films, one third lower than the geometrical surface area variation determined by atomic force microscopy. ITO surfaces were functionalized with a model organic molecule known as 6-(ferrocenyl)hexanethiol. The chemical attachment was done by means of a glycidoxy compound containing a reactive epoxy group, the so-called 3-glycidoxypropyltrimethoxy-silane. ITO functionalization was useful for determining the benefits of nanostructuration on the surface coverage of active molecules. Compared to ITO thin films, an increase in the total peak height of 140 % was observed for as-deposited nanostructured electrodes, whereas the same measurement for annealed electrodes resulted in an increase of more than 400 %. These preliminary results demonstrate the ability of nanostructured ITO to increase the surface-to-volume ratio, conductivity and surface area functionalization, features that highly benefit the performance of biosensors.

  16. Electrochemical characterization of organosilane-functionalized nanostructured ITO surfaces

    International Nuclear Information System (INIS)

    Pruna, R.; Palacio, F.; López, M.; Pérez, J.; Mir, M.; 2UB, Departament d'Enginyeries: Electrònica, Universitat de Barcelona, C/ Martí i Franquès 1, E-08028 Barcelona (Spain))" data-affiliation=" (MIND-IN2UB, Departament d'Enginyeries: Electrònica, Universitat de Barcelona, C/ Martí i Franquès 1, E-08028 Barcelona (Spain))" >Blázquez, O.; 2UB, Departament d'Enginyeries: Electrònica, Universitat de Barcelona, C/ Martí i Franquès 1, E-08028 Barcelona (Spain))" data-affiliation=" (MIND-IN2UB, Departament d'Enginyeries: Electrònica, Universitat de Barcelona, C/ Martí i Franquès 1, E-08028 Barcelona (Spain))" >Hernández, S.; 2UB, Departament d'Enginyeries: Electrònica, Universitat de Barcelona, C/ Martí i Franquès 1, E-08028 Barcelona (Spain))" data-affiliation=" (MIND-IN2UB, Departament d'Enginyeries: Electrònica, Universitat de Barcelona, C/ Martí i Franquès 1, E-08028 Barcelona (Spain))" >Garrido, B.

    2016-01-01

    The electroactivity of nanostructured indium tin oxide (ITO) has been investigated for its further use in applications such as sensing biological compounds by the analysis of redox active molecules. ITO films were fabricated by using electron beam evaporation at different substrate temperatures and subsequently annealed for promoting their crystallization. The morphology of the deposited material was monitored by scanning electron microscopy, confirming the deposition of either thin films or nanowires, depending on the substrate temperature. Electrochemical surface characterization revealed a 45 % increase in the electroactive surface area of nanostructured ITO with respect to thin films, one third lower than the geometrical surface area variation determined by atomic force microscopy. ITO surfaces were functionalized with a model organic molecule known as 6-(ferrocenyl)hexanethiol. The chemical attachment was done by means of a glycidoxy compound containing a reactive epoxy group, the so-called 3-glycidoxypropyltrimethoxy-silane. ITO functionalization was useful for determining the benefits of nanostructuration on the surface coverage of active molecules. Compared to ITO thin films, an increase in the total peak height of 140 % was observed for as-deposited nanostructured electrodes, whereas the same measurement for annealed electrodes resulted in an increase of more than 400 %. These preliminary results demonstrate the ability of nanostructured ITO to increase the surface-to-volume ratio, conductivity and surface area functionalization, features that highly benefit the performance of biosensors.

  17. SEMICONDUCTOR DEVICES: Structural and electrical characteristics of lanthanum oxide gate dielectric film on GaAs pHEMT technology

    Science.gov (United States)

    Chia-Song, Wu; Hsing-Chung, Liu

    2009-11-01

    This paper investigates the feasibility of using a lanthanum oxide thin film (La2O3) with a high dielectric constant as a gate dielectric on GaAs pHEMTs to reduce gate leakage current and improve the gate to drain breakdown voltage relative to the conventional GaAs pHEMT. An E/D mode pHEMT in a single chip was realized by selecting the appropriate La2O3 thickness. The thin La2O3 film was characterized: its chemical composition and crystalline structure were determined by X-ray photoelectron spectroscopy and X-ray diffraction, respectively. La2O3 exhibited good thermal stability after post-deposition annealing at 200, 400 and 600 °C because of its high binding-energy (835.6 eV). Experimental results clearly demonstrated that the La2O3 thin film was thermally stable. The DC and RF characteristics of Pt/La2O3/Ti/Au gate and conventional Pt/Ti/Au gate pHEMTs were examined. The measurements indicated that the transistor with the Pt/La2O3/Ti/Au gate had a higher breakdown voltage and lower gate leakage current. Accordingly, the La2O3 thin film is a potential high-k material for use as a gate dielectric to improve electrical performance and the thermal effect in high-power applications.

  18. Effect of temperature on the electrical properties of ITO in a TiO2/ITO film

    International Nuclear Information System (INIS)

    Nishimoto, Naoki; Imawaka, Naoto; Yoshino, Katsumi; Yamada, Yasuji; Ohnishi, Yosuke

    2013-01-01

    Thermal stabilities of indium tin oxide (ITO) substrates and TiO 2 /ITO structures were evaluated in relation to their electrical properties. The ITO substrates and TiO 2 /ITO structures were annealed at 350, 400, and 500 C. The ITO substrate with large grain size showed higher thermal stability than that with small grain size. The thermal stability of TiO 2 /ITO structure improved with increasing TiO 2 thickness, and a decrease in electron concentration was observed in resistance-increased samples. These changes were attributed to variations in grain-boundary potential caused by oxygen adsorption. It may be concluded that variation of the grain-boundary potential by thermal annealing has a dominant influence on resistance. Therefore, optimization of the grain size is important to improve the thermal stability of ITO. This mechanism and procedure can be applied to improve the characteristics of other TCO materials. (Copyright copyright 2013 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  19. Low-loss tunable 1D ITO-slot photonic crystal nanobeam cavity

    Science.gov (United States)

    Amin, Rubab; Tahersima, Mohammad H.; Ma, Zhizhen; Suer, Can; Liu, Ke; Dalir, Hamed; Sorger, Volker J.

    2018-05-01

    Tunable optical material properties enable novel applications in both versatile metamaterials and photonic components including optical sources and modulators. Transparent conductive oxides (TCOs) are able to highly tune their optical properties with applied bias via altering their free carrier concentration and hence plasma dispersion. The TCO material indium tin oxide (ITO) exhibits unity-strong index change and epsilon-near-zero behavior. However, with such tuning the corresponding high optical losses, originating from the fundamental Kramers–Kronig relations, result in low cavity finesse. However, achieving efficient tuning in ITO-cavities without using light–matter interaction enhancement techniques such as polaritonic modes, which are inherently lossy, is a challenge. Here we discuss a novel one-dimensional photonic crystal nanobeam cavity to deliver a cavity system offering a wide range of resonance tuning range, while preserving physical compact footprints. We show that a vertical silicon-slot waveguide incorporating an actively gated-ITO layer delivers ∼3.4 nm of tuning. By deploying distributed feedback, we are able to keep the Q-factor moderately high with tuning. Combining this with the sub-diffraction limited mode volume (0.1 (λ/2n)3) from the photonic (non-plasmonic) slot waveguide, facilitates a high Purcell factor exceeding 1000. This strong light–matter-interaction shows that reducing the mode volume of a cavity outweighs reducing the losses in diffraction limited modal cavities such as those from bulk Si3N4. These tunable cavities enable future modulators and optical sources such as tunable lasers.

  20. Fabrication of ITO particles using a combination of a homogeneous precipitation method and a seeding technique and their electrical conductivity

    Directory of Open Access Journals (Sweden)

    Yoshio Kobayashi

    2015-09-01

    Full Text Available The present work proposes a method to fabricate indium tin oxide (ITO particles using precursor particles synthesized with a combination of a homogeneous precipitation method and a seeding technique, and it also describes their electronic conductivity properties. Seed nanoparticles were produced using a co-precipitation method with aqueous solutions of indium (III chloride, tin (IV chloride aqueous solution and sodium hydroxide. Three types of ITO nanoparticles were fabricated. The first type was fabricated using the co-precipitation method (c-ITO. The second and third types were fabricated using a homogeneous precipitation method with the seed nanoparticles (s-ITO and without seeds (n-ITO. The as-prepared precursor particles were annealed in air at 500 °C, and their crystal structures were cubic ITO. The c-ITO nanoparticles formed irregular-shaped agglomerates of nanoparticles. The n-ITO nanoparticles had a rectangular-parallelepiped or quasi-cubic structure. Most s-ITO nanoparticles had a quasi-cubic structure, and their size was larger than the n-ITO particles. The volume resistivities of the c-ITO, n-ITO and s-ITO powders decreased in that order because the regular-shaped particles were made to strongly contact with each other.

  1. Enhanced optical and electrical properties of Ni inserted ITO/Ni/AZO tri-layer structure for photoelectric applications

    Energy Technology Data Exchange (ETDEWEB)

    Kumar, M. Melvin David; Kim, Hyunki [Department of Electrical Engineering, Incheon National University, Incheon 406772 (Korea, Republic of); Park, Yun Chang [Measurement and Analysis Division, National Nanofab Center (NNFC), Daejeon 305-806 (Korea, Republic of); Kim, Joondong, E-mail: joonkim@incheon.ac.kr [Department of Electrical Engineering, Incheon National University, Incheon 406772 (Korea, Republic of)

    2015-05-15

    Highlights: • Ni-embedding transparent conductor effectively reduces the resistivity. • Ni insertion improves the carrier mobility and collection efficiencies. • ITO/Ni/AZO is effective to improve photo-responses compared to ITO/AZO. - Abstract: A thin Ni layer of 5 nm thickness was deposited in between indium-tin-oxide (ITO) and aluminum-doped-zinc oxide (AZO) layers of 50 nm thickness each. The Ni inserting tri-layer structure (ITO/Ni/AZO) showed lower resistivity of 5.51 × 10{sup −4} Ωcm which is nearly 20 times lesser than 97.9 × 10{sup −4} Ωcm of bilayer structure (ITO/AZO). A thin Ni layer in between ITO and AZO enhanced the carrier concentration, mobility and photoresponse behaviors so that figure of merit (FOM) value of ITO/Ni/AZO device was greater than that of ITO/AZO device. ITO/Ni/AZO structure showed improved quantum efficiencies over a broad range of wavelengths (∼350–950 nm) compared to that of ITO/AZO bilayer structure, resulting in enhanced photoresponses. These results show that the optical, electrical and photoresponse properties of ITO/AZO structure could be enhanced by inserting Ni layer of 5 nm thickness in between ITO and AZO layers.

  2. Hydrogen-terminated diamond vertical-type metal oxide semiconductor field-effect transistors with a trench gate

    Energy Technology Data Exchange (ETDEWEB)

    Inaba, Masafumi, E-mail: inaba-ma@ruri.waseda.jp; Muta, Tsubasa; Kobayashi, Mikinori; Saito, Toshiki; Shibata, Masanobu; Matsumura, Daisuke; Kudo, Takuya; Hiraiwa, Atsushi [Graduate School of Science and Engineering, Waseda University, 3-4-1 Okubo, Shinjuku, Tokyo 169-8555 (Japan); Kawarada, Hiroshi [Graduate School of Science and Engineering, Waseda University, 3-4-1 Okubo, Shinjuku, Tokyo 169-8555 (Japan); Kagami Memorial Laboratory for Materials Science and Technology, Waseda University, 2-8-26 Nishiwaseda, Shinjuku, Tokyo 169-0051 (Japan)

    2016-07-18

    The hydrogen-terminated diamond surface (C-H diamond) has a two-dimensional hole gas (2DHG) layer independent of the crystal orientation. A 2DHG layer is ubiquitously formed on the C-H diamond surface covered by atomic-layer-deposited-Al{sub 2}O{sub 3}. Using Al{sub 2}O{sub 3} as a gate oxide, C-H diamond metal oxide semiconductor field-effect transistors (MOSFETs) operate in a trench gate structure where the diamond side-wall acts as a channel. MOSFETs with a side-wall channel exhibit equivalent performance to the lateral C-H diamond MOSFET without a side-wall channel. Here, a vertical-type MOSFET with a drain on the bottom is demonstrated in diamond with channel current modulation by the gate and pinch off.

  3. Re-crystallization of ITO films after carbon irradiation

    Energy Technology Data Exchange (ETDEWEB)

    Usman, Muhammad, E-mail: usmanm@ncp.edu.pk [Experimental Physics Laboratories, National Centre for Physics, Shahdara Valley Road, Quaid-i-Azam University, Islamabad (Pakistan); Khan, Shahid, E-mail: shahidkhan@zju.edu.cn [State Key Laboratory of Silicon Materials, School of Materials Science and Engineering, Zhejiang University, Hangzhou 310027 (China); Khan, Majid [Department of Physics, Quaid-i-Azam University, Islamabad (Pakistan); Abbas, Turab Ali [Experimental Physics Laboratories, National Centre for Physics, Shahdara Valley Road, Quaid-i-Azam University, Islamabad (Pakistan)

    2017-01-15

    Highlights: • Carbon irradiation on ITO destroys crystal structure until threshold ion fluence. • Carbon irradiation induced amorphization in ITO is recoverable at higher fluence. • Optical transmittance is reduced after carbon irradiation. • Electrical resistivity is increased after irradiation with carbon ions in ITO. • Bandgap is reduced with increasing fluence of carbon irradiation. - Abstract: 2.0 MeV carbon ion irradiation effects on Indium Tin Oxide (ITO) thin films on glass substrate are investigated. The films are irradiated with carbon ions in the fluence range of 1 × 10{sup 13} to 1 × 10{sup 15} ions/cm{sup 2}. The irradiation induced effects in ITO are compared before and after ion bombardment by systematic study of structural, optical and electrical properties of the films. The XRD results show polycrystalline nature of un-irradiated ITO films which turns to amorphous state after 1 × 10{sup 13} ions/cm{sup 2} fluence of carbon ions. Further increase in ion fluence to 1 × 10{sup 14} ions/cm{sup 2} re-crystallizes the structure and retains for even higher fluences. A gradual decrease in the electrical conductivity and transmittance of irradiated samples is observed with increasing ion fluence. The band gap of the films is observed to be decreased after carbon irradiation.

  4. Re-crystallization of ITO films after carbon irradiation

    International Nuclear Information System (INIS)

    Usman, Muhammad; Khan, Shahid; Khan, Majid; Abbas, Turab Ali

    2017-01-01

    Highlights: • Carbon irradiation on ITO destroys crystal structure until threshold ion fluence. • Carbon irradiation induced amorphization in ITO is recoverable at higher fluence. • Optical transmittance is reduced after carbon irradiation. • Electrical resistivity is increased after irradiation with carbon ions in ITO. • Bandgap is reduced with increasing fluence of carbon irradiation. - Abstract: 2.0 MeV carbon ion irradiation effects on Indium Tin Oxide (ITO) thin films on glass substrate are investigated. The films are irradiated with carbon ions in the fluence range of 1 × 10"1"3 to 1 × 10"1"5 ions/cm"2. The irradiation induced effects in ITO are compared before and after ion bombardment by systematic study of structural, optical and electrical properties of the films. The XRD results show polycrystalline nature of un-irradiated ITO films which turns to amorphous state after 1 × 10"1"3 ions/cm"2 fluence of carbon ions. Further increase in ion fluence to 1 × 10"1"4 ions/cm"2 re-crystallizes the structure and retains for even higher fluences. A gradual decrease in the electrical conductivity and transmittance of irradiated samples is observed with increasing ion fluence. The band gap of the films is observed to be decreased after carbon irradiation.

  5. Transport Properties of ZnSe- ITO Hetero Junction

    Science.gov (United States)

    Ichibakase, Tsuyoshi

    In this report, ITO(Indium Tin Oxide) was used on the glass substrates as the transparent electrode, and ZnSe layer was prepared by the vacuum deposition on this ITO. Then, the electrical characteristics of this sample were investigated by mans of the electric current transport analysis. The sample that ZnSe was prepared as 3.4 μm in case of ITO-ZnSe sample, has high density level at the junction surface. The ITO-ZnSe junction has two type of diffusion current. However, the ITO-ZnSe sample that ZnSe layer was prepared as 0.1 μm can be assumed as the ohmic contact, and ITO-ZnSe(0.1μm) -CdTe sample shows the avalanche breakdown, and it is considered that the avalanche breakdown occurs in CdTe layer. It is difficult to occur the avalanche breakdown, if ZnSe-CdTe junction has high-density level and CdTe layer has high-density defect. Hence, the ZnSe-CdTe sample that CdTe layer was prepared on ITO-ZnSe(0.1μm) substrate has not high-density level at the junction surface, and the CdTe layer with little lattice imperfection can be prepared. It found that ITO-ZnSe(0.1μm) substrate is available for the II-VI compounds semiconductor device through above analysis result.

  6. Microstructure, ferromagnetic and photoluminescence properties of ITO and Cr doped ITO nanoparticles using solid state reaction

    Energy Technology Data Exchange (ETDEWEB)

    Babu, S. Harinath [Thin Films Laboratory, Centre for Crystal Growth, VIT University, Vellore-632014, Tamilnadu, India. (India); Kaleemulla, S., E-mail: skaleemulla@gmail.com [Thin Films Laboratory, Centre for Crystal Growth, VIT University, Vellore-632014, Tamilnadu, India. (India); Rao, N. Madhusudhana [Thin Films Laboratory, Centre for Crystal Growth, VIT University, Vellore-632014, Tamilnadu, India. (India); Rao, G. Venugopal [Materials Physics Division, Indira Gandhi Centre for Atomic Research, Kalpakkam-603102, Tamilnadu (India); Krishnamoorthi, C. [Thin Films Laboratory, Centre for Crystal Growth, VIT University, Vellore-632014, Tamilnadu, India. (India)

    2016-11-01

    Indium-tin-oxide (ITO) (In{sub 0.95}Sn{sub 0.05}){sub 2}O{sub 3} and Cr doped indium-tin-oxide (In{sub 0.90}Sn{sub 0.05}Cr{sub 0.05}){sub 2}O{sub 3} nanoparticles were prepared using simple low cost solid state reaction method and characterized by different techniques to study their structural, optical and magnetic properties. Microstructures, surface morphology, crystallite size of the nanoparticles were studied using X-ray diffractometer (XRD), field emission scanning electron microscope (FE-SEM). From these methods it was found that the particles were about 45 nm. Chemical composition and valence states of the nanoparticles were studied using energy dispersive analysis of X-rays (EDAX) and X-ray photoelectron spectroscopy (XPS). From these techniques it was observed that the elements of indium, tin, chromium and oxygen were present in the system in appropriate ratios and they were in +3, +4, +3 and −2 oxidation states. Raman studies confirmed that the nanoparticle were free from unintentional impurities. Two broad emission peaks were observed at 330 nm and 460 nm when excited wavelength of 300 nm. Magnetic studies were carried out at 300 K and 100 K using vibrating sample magnetometer (VSM) and found that the ITO nanoparticles were ferromagnetic at 100 K and 300 K. Where-as the room temperature ferromagnetism completely disappeared in Cr doped ITO nanoparticles at 100 K and 300 K.

  7. Microstructure, ferromagnetic and photoluminescence properties of ITO and Cr doped ITO nanoparticles using solid state reaction

    Science.gov (United States)

    Babu, S. Harinath; Kaleemulla, S.; Rao, N. Madhusudhana; Rao, G. Venugopal; Krishnamoorthi, C.

    2016-11-01

    Indium-tin-oxide (ITO) (In0.95Sn0.05)2O3 and Cr doped indium-tin-oxide (In0.90Sn0.05Cr0.05)2O3 nanoparticles were prepared using simple low cost solid state reaction method and characterized by different techniques to study their structural, optical and magnetic properties. Microstructures, surface morphology, crystallite size of the nanoparticles were studied using X-ray diffractometer (XRD), field emission scanning electron microscope (FE-SEM). From these methods it was found that the particles were about 45 nm. Chemical composition and valence states of the nanoparticles were studied using energy dispersive analysis of X-rays (EDAX) and X-ray photoelectron spectroscopy (XPS). From these techniques it was observed that the elements of indium, tin, chromium and oxygen were present in the system in appropriate ratios and they were in +3, +4, +3 and -2 oxidation states. Raman studies confirmed that the nanoparticle were free from unintentional impurities. Two broad emission peaks were observed at 330 nm and 460 nm when excited wavelength of 300 nm. Magnetic studies were carried out at 300 K and 100 K using vibrating sample magnetometer (VSM) and found that the ITO nanoparticles were ferromagnetic at 100 K and 300 K. Where-as the room temperature ferromagnetism completely disappeared in Cr doped ITO nanoparticles at 100 K and 300 K.

  8. Preparation of ZnO nanorods on conductive PET-ITO-Ag fibers

    Science.gov (United States)

    Li, Yiwen; Ji, Shuai; Chen, Yuanyu; Zhang, Hong; Gong, Yumei; Guo, Jing

    2016-12-01

    We studied the vertical ZnO nanorods grown on conductive conventional polyethylene terephthalate (PET) fibers which are prepared by electroless silver depositing on tin-doped indium oxide (ITO) coated PET fibers through an efficient and low-cost green approach. The PET fibers were firstly functionalized with a layer of ITO gel synthesized through a sol-gel process at rather low temperature, simply by immersing the fibers into ITO sol for several minutes followed by gelation at 120 °C. Once the ITO gel layer surface was activated by SnCl2, a continuous, uniform, and compact layer of silver was carried out on the surface of the PET-ITO fibers through electroless plating operation at room temperature. The as-prepared PET-ITO-Ag fibers had good electrical conductivity, with surface resistivity as low as 0.23 mΩ cm. The overall procedure is simple, efficient, nontoxic, and controllable. The conductive PET-ITO-Ag fiber was used successfully as a flexible basal material to plant vertical ZnO nanorods through controlling the seeding and growth processes. The morphology of the PET-ITO, PET-ITO-Ag, and PET-ITO-Ag-ZnO fibers were observed by scanning electron microscopy (SEM) and transmission electron microscopy (TEM). Undergone the whole process, although the tensile strength of the fiber decreased slightly, they may still exert their applications in flexible electronic such as photovoltaic and piezoelectric devices.

  9. Convenient preparation of ITO nanoparticles inks for transparent conductive thin films

    International Nuclear Information System (INIS)

    Ito, Daisuke; Masuko, Keiichiro; Weintraub, Benjamin A.; McKenzie, Lallie C.; Hutchison, James E.

    2012-01-01

    Tin-doped indium oxide (ITO) nanoparticles are useful precursors to transparent electrodes in a variety of technologically important applications. We synthesized ITO nanoparticles from indium and tin acetylacetonates in oleyl alcohol using a novel temperature ramp profile. The monodispersed ITO nanoparticles have an average diameter of 8.6 nm and form dense, flat films by simple spin coating. The thickness of the film can be controlled by varying the number of additional depositions. The resulting ITO film is transparent and has a resistivity of 7 × 10 −3 Ω cm after sintering at 300 °C. Using a suitable solvent, it is possible to coat high-aspect-ratio structures with ITO nanoparticles. This approach to ITO coatings is greener and offers a number of advantages for transparent electrodes because it is highly versatile, easily scalable, and supports low-cost manufacturing.

  10. Preparation of ZnO nanorods on conductive PET-ITO-Ag fibers

    Energy Technology Data Exchange (ETDEWEB)

    Li, Yiwen; Ji, Shuai; Chen, Yuanyu; Zhang, Hong; Gong, Yumei, E-mail: ymgong@dlpu.edu.cn; Guo, Jing, E-mail: guojing8161@163.com

    2016-12-01

    Highlights: • Polymeric PET fibers were conductive modified by ITO and the subsequent Ag coating. The conductive PET-ITO-Ag fiber has the surface resistivity as low as 0.23 mΩ cm. The PET-ITO-Ag fiber was used as a basal material to plant vertical ZnO nanorods. - Abstract: We studied the vertical ZnO nanorods grown on conductive conventional polyethylene terephthalate (PET) fibers which are prepared by electroless silver depositing on tin-doped indium oxide (ITO) coated PET fibers through an efficient and low-cost green approach. The PET fibers were firstly functionalized with a layer of ITO gel synthesized through a sol–gel process at rather low temperature, simply by immersing the fibers into ITO sol for several minutes followed by gelation at 120 °C. Once the ITO gel layer surface was activated by SnCl{sub 2}, a continuous, uniform, and compact layer of silver was carried out on the surface of the PET-ITO fibers through electroless plating operation at room temperature. The as-prepared PET-ITO-Ag fibers had good electrical conductivity, with surface resistivity as low as 0.23 mΩ cm. The overall procedure is simple, efficient, nontoxic, and controllable. The conductive PET-ITO-Ag fiber was used successfully as a flexible basal material to plant vertical ZnO nanorods through controlling the seeding and growth processes. The morphology of the PET-ITO, PET-ITO-Ag, and PET-ITO-Ag-ZnO fibers were observed by scanning electron microscopy (SEM) and transmission electron microscopy (TEM). Undergone the whole process, although the tensile strength of the fiber decreased slightly, they may still exert their applications in flexible electronic such as photovoltaic and piezoelectric devices.

  11. Preparation of ZnO nanorods on conductive PET-ITO-Ag fibers

    International Nuclear Information System (INIS)

    Li, Yiwen; Ji, Shuai; Chen, Yuanyu; Zhang, Hong; Gong, Yumei; Guo, Jing

    2016-01-01

    Highlights: • Polymeric PET fibers were conductive modified by ITO and the subsequent Ag coating. The conductive PET-ITO-Ag fiber has the surface resistivity as low as 0.23 mΩ cm. The PET-ITO-Ag fiber was used as a basal material to plant vertical ZnO nanorods. - Abstract: We studied the vertical ZnO nanorods grown on conductive conventional polyethylene terephthalate (PET) fibers which are prepared by electroless silver depositing on tin-doped indium oxide (ITO) coated PET fibers through an efficient and low-cost green approach. The PET fibers were firstly functionalized with a layer of ITO gel synthesized through a sol–gel process at rather low temperature, simply by immersing the fibers into ITO sol for several minutes followed by gelation at 120 °C. Once the ITO gel layer surface was activated by SnCl 2 , a continuous, uniform, and compact layer of silver was carried out on the surface of the PET-ITO fibers through electroless plating operation at room temperature. The as-prepared PET-ITO-Ag fibers had good electrical conductivity, with surface resistivity as low as 0.23 mΩ cm. The overall procedure is simple, efficient, nontoxic, and controllable. The conductive PET-ITO-Ag fiber was used successfully as a flexible basal material to plant vertical ZnO nanorods through controlling the seeding and growth processes. The morphology of the PET-ITO, PET-ITO-Ag, and PET-ITO-Ag-ZnO fibers were observed by scanning electron microscopy (SEM) and transmission electron microscopy (TEM). Undergone the whole process, although the tensile strength of the fiber decreased slightly, they may still exert their applications in flexible electronic such as photovoltaic and piezoelectric devices.

  12. ITO-free flexible organic solar cells with printed current collecting grids

    NARCIS (Netherlands)

    Galagan, Y.O.; Rubingh, J.E.J.M.; Andriessen, H.A.J.M.; Fan, C.C.; Blom, P.W.M.; Veenstra, S.C.; Kroon, J.M.

    2011-01-01

    The presence of a transparent conductive electrode such as indium tin oxide (ITO) limits the reliability and cost price of organic photovoltaic devices as it is brittle and expensive. Moreover, the relative high sheet resistance of an ITO electrode on flexible substrates limits the maximum width of

  13. Transparent conductive ITO/Cu/ITO films prepared on flexible substrates at room temperature

    International Nuclear Information System (INIS)

    Ding Xingwei; Yan Jinliang; Li Ting; Zhang Liying

    2012-01-01

    Transparent conductive ITO/Cu/ITO films were deposited on PET substrates by magnetron sputtering using three cathodes at room temperature. Effects of the SiO 2 buffer layer and thickness of Cu interlayer on the structural, electrical and optical properties of ITO/Cu/ITO films were investigated. The optical transmittance was affected slightly by SiO 2 buffer layer, but the electrical properties of ITO/Cu/ITO films were improved. The transmittance and resistivity of the SiO 2 /ITO/Cu/ITO films decrease as the Cu layer thickness increases. The ITO/Cu/ITO film with 5 nm Cu interlayer deposited on the 40 nm thick SiO 2 buffer layer exhibits the sheet resistance of 143 Ω/sq and transmittance of 65% at 550 nm wavelength. The optical and electrical properties of the ITO/Cu/ITO films were mainly dependent on the Cu layer.

  14. Transparent conductive ITO/Cu/ITO films prepared on flexible substrates at room temperature

    Science.gov (United States)

    Ding, Xingwei; Yan, Jinliang; Li, Ting; Zhang, Liying

    2012-01-01

    Transparent conductive ITO/Cu/ITO films were deposited on PET substrates by magnetron sputtering using three cathodes at room temperature. Effects of the SiO2 buffer layer and thickness of Cu interlayer on the structural, electrical and optical properties of ITO/Cu/ITO films were investigated. The optical transmittance was affected slightly by SiO2 buffer layer, but the electrical properties of ITO/Cu/ITO films were improved. The transmittance and resistivity of the SiO2/ITO/Cu/ITO films decrease as the Cu layer thickness increases. The ITO/Cu/ITO film with 5 nm Cu interlayer deposited on the 40 nm thick SiO2 buffer layer exhibits the sheet resistance of 143 Ω/sq and transmittance of 65% at 550 nm wavelength. The optical and electrical properties of the ITO/Cu/ITO films were mainly dependent on the Cu layer.

  15. Preparation and characterization of nanocrystalline ITO thin films on glass and clay substrates by ion-beam sputter deposition method

    International Nuclear Information System (INIS)

    Venkatachalam, S.; Nanjo, H.; Kawasaki, K.; Wakui, Y.; Hayashi, H.; Ebina, T.

    2011-01-01

    Nanocrystalline indium tin oxide (ITO) thin films were prepared on clay-1 (Clay-TPP-LP-SA), clay-2 (Clay-TPP-SA) and glass substrates using ion-beam sputter deposition method. X-ray diffraction (XRD) patterns showed that the as-deposited ITO films on both clay-1 and clay-2 substrates were a mixture of amorphous and polycrystalline. But the as-deposited ITO films on glass substrates were polycrystalline. The surface morphologies of as-deposited ITO/glass has smooth surface; in contrast, ITO/clay-1 has rough surface. The surface roughnesses of ITO thin films on glass and clay-1 substrate were calculated as 4.3 and 83 nm, respectively. From the AFM and SEM analyses, the particle sizes of nanocrystalline ITO for a film thickness of 712 nm were calculated as 19.5 and 20 nm, respectively. Optical study showed that the optical transmittance of ITO/clay-2 was higher than that of ITO/clay-1. The sheet resistances of as-deposited ITO/clay-1 and ITO/clay-2 were calculated as 76.0 and 63.0 Ω/□, respectively. The figure of merit value for as-deposited ITO/clay-2 (12.70 x 10 -3 /Ω) was also higher than that of ITO/clay-1 (9.6 x 10 -3 /Ω), respectively. The flexibilities of ITO/clay-1 and ITO/clay-2 were evaluated as 13 and 12 mm, respectively. However, the ITO-coated clay-2 substrate showed much better optical and electrical properties as well as flexibility as compared to clay-1.

  16. Plasma-Induced Damage on the Reliability of Hf-Based High-k/Dual Metal-Gates Complementary Metal Oxide Semiconductor Technology

    International Nuclear Information System (INIS)

    Weng, W.T.; Lin, H.C.; Huang, T.Y.; Lee, Y.J.; Lin, H.C.

    2009-01-01

    This study examines the effects of plasma-induced damage (PID) on Hf-based high-k/dual metal-gates transistors processed with advanced complementary metal-oxide-semiconductor (CMOS) technology. In addition to the gate dielectric degradations, this study demonstrates that thinning the gate dielectric reduces the impact of damage on transistor reliability including the positive bias temperature instability (PBTI) of n-channel metal-oxide-semiconductor field-effect transistors (NMOSFETs) and the negative bias temperature instability (NBTI) of p-channel MOSFETs. This study shows that high-k/metal-gate transistors are more robust against PID than conventional SiO 2 /poly-gate transistors with similar physical thickness. Finally this study proposes a model that successfully explains the observed experimental trends in the presence of PID for high-k/metal-gate CMOS technology.

  17. Study of narrow and intense UV electroluminescence from ITO/SRO/Si-p and ITO/SRN/SRO/Si-p based light emitting capacitors

    Energy Technology Data Exchange (ETDEWEB)

    Cabañas-Tay, S.A., E-mail: scabanastay@hotmail.com [Centro de Investigación en Materiales Avanzados S.C., Unidad Monterrey-PIIT, 66600, Apodaca, Nuevo León (Mexico); Palacios-Huerta, L.; Aceves-Mijares, M. [INAOE, Electronics Department, Apartado 51, Puebla 72000 (Mexico); Coyopol, A. [CIDS-BUAP, Apdo. 1651, Puebla Pue 72000 (Mexico); Morales-Morales, F.; Pérez-García, S.A.; Licea-Jiménez, L. [Centro de Investigación en Materiales Avanzados S.C., Unidad Monterrey-PIIT, 66600, Apodaca, Nuevo León (Mexico); Domínguez-Horna, C. [Instituto de Microelectrónica de Barcelona (IMB-CNM, CSIC), Bellaterra, 08103, Barcelona (Spain); Monfil-Leyva, K. [CIDS-BUAP, Apdo. 1651, Puebla Pue 72000 (Mexico); Morales-Sánchez, A., E-mail: alfredo.morales@cimav.edu.mx [Centro de Investigación en Materiales Avanzados S.C., Unidad Monterrey-PIIT, 66600, Apodaca, Nuevo León (Mexico)

    2017-03-15

    In this work, multiple narrow and highly intense ultraviolet (UV) electroluminescent (EL) bands were observed in light emitting capacitors (LECs) using silicon rich oxide (SRO) films as active layer. Besides, the effect of a thin silicon rich nitride (SRN) film on top of the SRO (as SRN/SRO bilayer) layer was also studied. LECs were fabricated using simple metal–insulator–semiconductor (MIS) structures with indium tin oxide (ITO) and aluminum as gate and substrate electrodes, respectively. SRO and SRN films contain 41.85±1.1 and 46.96±1.1 at% of silicon, respectively. Both structures exhibited a resistance switching (RS) behavior from a high conduction state (HCS) to a low conduction state (LCS), enhancing an intense UV EL. This RS behavior produces structural changes in the active layer and probably in the ITO contact. Seven narrow bands with half-peak width of 7±0.6 nm at ~250, 270, 285, 305, 325, 415 and 450 nm were clearly observed once the LCS was reached. These bands could be related to a combination of emissions through defects inside SRO (252, 288.2 and 415 nm), and characteristic radiation of neutral tin (252.39 and 286.33 nm), neutral indium (271.02, 303.93 and 325.85 nm), single (444.82 nm) and doubly ionized indium (403.07 nm). Furthermore, red EL was observed at the HCS and it was similar to the PL spectra indicating the same radiative process involved. The charge transport is improved when the SRN/SRO bilayer is used as active layer in the LEC. An EL band at ~590 nm is observed when the SRN/SRO bilayer is formed at both conduction states. This band has been observed before and attributed to transitions from the minimum conduction band to K° centers in SRN films. The conduction mechanism responsible of the EL at both conduction states was also studied.

  18. Study of narrow and intense UV electroluminescence from ITO/SRO/Si-p and ITO/SRN/SRO/Si-p based light emitting capacitors

    International Nuclear Information System (INIS)

    Cabañas-Tay, S.A.; Palacios-Huerta, L.; Aceves-Mijares, M.; Coyopol, A.; Morales-Morales, F.; Pérez-García, S.A.; Licea-Jiménez, L.; Domínguez-Horna, C.; Monfil-Leyva, K.; Morales-Sánchez, A.

    2017-01-01

    In this work, multiple narrow and highly intense ultraviolet (UV) electroluminescent (EL) bands were observed in light emitting capacitors (LECs) using silicon rich oxide (SRO) films as active layer. Besides, the effect of a thin silicon rich nitride (SRN) film on top of the SRO (as SRN/SRO bilayer) layer was also studied. LECs were fabricated using simple metal–insulator–semiconductor (MIS) structures with indium tin oxide (ITO) and aluminum as gate and substrate electrodes, respectively. SRO and SRN films contain 41.85±1.1 and 46.96±1.1 at% of silicon, respectively. Both structures exhibited a resistance switching (RS) behavior from a high conduction state (HCS) to a low conduction state (LCS), enhancing an intense UV EL. This RS behavior produces structural changes in the active layer and probably in the ITO contact. Seven narrow bands with half-peak width of 7±0.6 nm at ~250, 270, 285, 305, 325, 415 and 450 nm were clearly observed once the LCS was reached. These bands could be related to a combination of emissions through defects inside SRO (252, 288.2 and 415 nm), and characteristic radiation of neutral tin (252.39 and 286.33 nm), neutral indium (271.02, 303.93 and 325.85 nm), single (444.82 nm) and doubly ionized indium (403.07 nm). Furthermore, red EL was observed at the HCS and it was similar to the PL spectra indicating the same radiative process involved. The charge transport is improved when the SRN/SRO bilayer is used as active layer in the LEC. An EL band at ~590 nm is observed when the SRN/SRO bilayer is formed at both conduction states. This band has been observed before and attributed to transitions from the minimum conduction band to K° centers in SRN films. The conduction mechanism responsible of the EL at both conduction states was also studied.

  19. Indium-gallium-zinc-oxide thin-film transistor with a planar split dual-gate structure

    Science.gov (United States)

    Liu, Yu-Rong; Liu, Jie; Song, Jia-Qi; Lai, Pui-To; Yao, Ruo-He

    2017-12-01

    An amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film transistor (TFT) with a planar split dual gate (PSDG) structure has been proposed, fabricated and characterized. Experimental results indicate that the two independent gates can provide dynamical control of device characteristics such as threshold voltage, sub-threshold swing, off-state current and saturation current. The transconductance extracted from the output characteristics of the device increases from 4.0 × 10-6S to 1.6 × 10-5S for a change of control gate voltage from -2 V to 2 V, and thus the device could be used in a variable-gain amplifier. A significant advantage of the PSDG structure is its flexibility in controlling the device performance according to the need of practical applications.

  20. A Review of Nanoscale Channel and Gate Engineered FINFETs for VLSI Mixed Signal Applications Using Zirconium-di-Oxide Dielectrics

    Directory of Open Access Journals (Sweden)

    D.Nirmal

    2014-07-01

    Full Text Available In the past, most of the research and development efforts in the area of CMOS and IC’s are oriented towards reducing the power and increasing the gain of the circuits. While focusing the attention on low power and high gain in the device, the materials of the device also been taken into consideration. In the present technology, Computationally intensive devices with low power dissipation and high gain are becoming a critical application domain. Several factors have contributed to this paradigm shift. The primary driving factor being the increase in scale of integration, the chip has to accommodate smaller and faster transistors than their predecessors. During the last decade semiconductor technology has been led by conventional scaling. Scaling, has been aimed towards higher speed, lower power and higher density of the semiconductor devices. However, as scaling approached its physical limits, it has become more difficult and challenging for fabrication industry. Therefore, tremendous research has been carried out to investigate the alternatives, and this led to the introduction of new Nano materials and concepts to overcome the difficulties in the device fabrications. In order to reduce the leakage current and parasitic capacitance in devices, gate oxide high-k dielectric materials are explored. Among the different high-k materials available the nano size Zirconium dioxide material is suggested as an alternate gate oxide material for devices due to its thermal stability and small grain size of material. To meet the requirements of ITRS roadmap 2012, the Multi gate devices are considered to be one of the most promising technologies for the future microelectronics industry due to its excellent immunity to short channel effects and high value of On current. The double gate or multi gate devices provide a better scalability option due to its excellent immunity to short-channel effects. Here the different high-k materials are replaced in different

  1. Fabrication of PEDOT-OTS-patterned ITO substrates

    NARCIS (Netherlands)

    Herzer, N.; Wienk, M.M.; Schmit, P.; Spoelstra, A.B.; Hendriks, C.E.; Oosterhout, S.D.; Höppener, S.; Schubert, U.S.

    2010-01-01

    The fabrication of a poly(3,4-ethylenedioxythiophene) (PEDOT) pattern is demonstrated. As template, an n-octadecyltrichlorosilane (OTS) monolayer self-assembled on indium tin oxide (ITO) was structured by UV–ozone photolithography, resulting in an ITO–OTS patterned surface. The conducting properties

  2. Current Collecting Grids for ITO-Free Solar Cells

    DEFF Research Database (Denmark)

    Galagan, Yulia; Zimmermann, Birger; Coenen, Erica W. C.

    2012-01-01

    Indium-tin-oxide (ITO) free polymer solar cells prepared by ink jet printing a composite front electrode comprising silver grid lines and a semitransparent PEDOT:PSS conductor are demonstrated. The effect of grid line density is explored for a large series of devices and a careful modeling study...

  3. Semiconductor to metallic transition in bulk accumulated amorphous indium-gallium-zinc-oxide dual gate thin-film transistor

    Directory of Open Access Journals (Sweden)

    Minkyu Chun

    2015-05-01

    Full Text Available We investigated the effects of top gate voltage (VTG and temperature (in the range of 25 to 70 oC on dual-gate (DG back-channel-etched (BCE amorphous-indium-gallium-zinc-oxide (a-IGZO thin film transistors (TFTs characteristics. The increment of VTG from -20V to +20V, decreases the threshold voltage (VTH from 19.6V to 3.8V and increases the electron density to 8.8 x 1018cm−3. Temperature dependent field-effect mobility in saturation regime, extracted from bottom gate sweep, show a critical dependency on VTG. At VTG of 20V, the mobility decreases from 19.1 to 15.4 cm2/V ⋅ s with increasing temperature, showing a metallic conduction. On the other hand, at VTG of - 20V, the mobility increases from 6.4 to 7.5cm2/V ⋅ s with increasing temperature. Since the top gate bias controls the position of Fermi level, the temperature dependent mobility shows metallic conduction when the Fermi level is above the conduction band edge, by applying high positive bias to the top gate.

  4. Semiconductor to metallic transition in bulk accumulated amorphous indium-gallium-zinc-oxide dual gate thin-film transistor

    Energy Technology Data Exchange (ETDEWEB)

    Chun, Minkyu; Chowdhury, Md Delwar Hossain; Jang, Jin, E-mail: jjang@khu.ac.kr [Advanced Display Research Center and Department of Information Display, Kyung Hee University, Seoul 130-701 (Korea, Republic of)

    2015-05-15

    We investigated the effects of top gate voltage (V{sub TG}) and temperature (in the range of 25 to 70 {sup o}C) on dual-gate (DG) back-channel-etched (BCE) amorphous-indium-gallium-zinc-oxide (a-IGZO) thin film transistors (TFTs) characteristics. The increment of V{sub TG} from -20V to +20V, decreases the threshold voltage (V{sub TH}) from 19.6V to 3.8V and increases the electron density to 8.8 x 10{sup 18}cm{sup −3}. Temperature dependent field-effect mobility in saturation regime, extracted from bottom gate sweep, show a critical dependency on V{sub TG}. At V{sub TG} of 20V, the mobility decreases from 19.1 to 15.4 cm{sup 2}/V ⋅ s with increasing temperature, showing a metallic conduction. On the other hand, at V{sub TG} of - 20V, the mobility increases from 6.4 to 7.5cm{sup 2}/V ⋅ s with increasing temperature. Since the top gate bias controls the position of Fermi level, the temperature dependent mobility shows metallic conduction when the Fermi level is above the conduction band edge, by applying high positive bias to the top gate.

  5. Role of Oxygen in Ionic Liquid Gating on Two-Dimensional Cr2Ge2Te6: A Non-oxide Material.

    Science.gov (United States)

    Chen, Yangyang; Xing, Wenyu; Wang, Xirui; Shen, Bowen; Yuan, Wei; Su, Tang; Ma, Yang; Yao, Yunyan; Zhong, Jiangnan; Yun, Yu; Xie, X C; Jia, Shuang; Han, Wei

    2018-01-10

    Ionic liquid gating can markedly modulate a material's carrier density so as to induce metallization, superconductivity, and quantum phase transitions. One of the main issues is whether the mechanism of ionic liquid gating is an electrostatic field effect or an electrochemical effect, especially for oxide materials. Recent observation of the suppression of the ionic liquid gate-induced metallization in the presence of oxygen for oxide materials suggests the electrochemical effect. However, in more general scenarios, the role of oxygen in the ionic liquid gating effect is still unclear. Here, we perform ionic liquid gating experiments on a non-oxide material: two-dimensional ferromagnetic Cr 2 Ge 2 Te 6 . Our results demonstrate that despite the large increase of the gate leakage current in the presence of oxygen, the oxygen does not affect the ionic liquid gating effect on  the channel resistance of Cr 2 Ge 2 Te 6 devices (ionic liquid gating is more effective on the modulation of the channel resistances compared to the back gating across the 300 nm thick SiO 2 .

  6. Interface Study on Amorphous Indium Gallium Zinc Oxide Thin Film Transistors Using High-k Gate Dielectric Materials

    Directory of Open Access Journals (Sweden)

    Yu-Hsien Lin

    2015-01-01

    Full Text Available We investigated amorphous indium gallium zinc oxide (a-IGZO thin film transistors (TFTs using different high-k gate dielectric materials such as silicon nitride (Si3N4 and aluminum oxide (Al2O3 at low temperature process (<300°C and compared them with low temperature silicon dioxide (SiO2. The IGZO device with high-k gate dielectric material will expect to get high gate capacitance density to induce large amount of channel carrier and generate the higher drive current. In addition, for the integrating process of integrating IGZO device, postannealing treatment is an essential process for completing the process. The chemical reaction of the high-k/IGZO interface due to heat formation in high-k/IGZO materials results in reliability issue. We also used the voltage stress for testing the reliability for the device with different high-k gate dielectric materials and explained the interface effect by charge band diagram.

  7. Effect of top gate bias on photocurrent and negative bias illumination stress instability in dual gate amorphous indium-gallium-zinc oxide thin-film transistor

    Energy Technology Data Exchange (ETDEWEB)

    Lee, Eunji; Chowdhury, Md Delwar Hossain; Park, Min Sang; Jang, Jin, E-mail: jjang@khu.ac.kr [Advanced Display Research Center and Department of Information Display, Kyung Hee University, Seoul 130-701 (Korea, Republic of)

    2015-12-07

    We have studied the effect of top gate bias (V{sub TG}) on the generation of photocurrent and the decay of photocurrent for back channel etched inverted staggered dual gate structure amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film-transistors. Upon 5 min of exposure of 365 nm wavelength and 0.7 mW/cm{sup 2} intensity light with negative bottom gate bias, the maximum photocurrent increases from 3.29 to 322 pA with increasing the V{sub TG} from −15 to +15 V. By changing V{sub TG} from negative to positive, the Fermi level (E{sub F}) shifts toward conduction band edge (E{sub C}), which substantially controls the conversion of neutral vacancy to charged one (V{sub O} → V{sub O}{sup +}/V{sub O}{sup 2+} + e{sup −}/2e{sup −}), peroxide (O{sub 2}{sup 2−}) formation or conversion of ionized interstitial (O{sub i}{sup 2−}) to neutral interstitial (O{sub i}), thus electron concentration at conduction band. With increasing the exposure time, more carriers are generated, and thus, maximum photocurrent increases until being saturated. After negative bias illumination stress, the transfer curve shows −2.7 V shift at V{sub TG} = −15 V, which gradually decreases to −0.42 V shift at V{sub TG} = +15 V. It clearly reveals that the position of electron quasi-Fermi level controls the formation of donor defects (V{sub O}{sup +}/V{sub O}{sup 2+}/O{sub 2}{sup 2−}/O{sub i}) and/or hole trapping in the a-IGZO /interfaces.

  8. Diffusion and crystal growth in plasma deposed thin ITO films

    International Nuclear Information System (INIS)

    Steffen, H.; Wulff, H.; Quaas, M.; Tun, Tin Maung.; Hipple, R.

    2000-01-01

    Tin-doped indium oxide (ITO) films were deposited by means of DC-planar magnetron sputtering. A metallic In/Sn (90/10) target an Ar/O 2 gas mixture were used. The oxygen flow was varied between 0 and 2 sccm. Substrate voltages between 0 and -100 V were used. With increasing oxygen flow film structure and composition change from crystalline metallic In/Sn to amorphous ITO. Simultaneously the deposition rate decreases and the film density increases. The diffusion of oxygen into metallic In/Sn films and the amorphous-to-crystalline transformation of ITO were studied using in situ grazing incidence X-ray diffractometry (GIXRD), grazing incidence reflectometry (GIXR), and AFM. From the X-ray integral intensities diffusion constants, activation energies of the diffusion, reaction order and activation energy of the crystal growth were extracted. (authors)

  9. Photoinduced absorption of Ag nanoparticles deposited on ITO substrate

    International Nuclear Information System (INIS)

    Ozga, K.; Oyama, M.; Szota, M.; Nabialek, M.; Kityk, I.V.; Slezak, A.; Umar, A.A.; Nouneh, K.

    2011-01-01

    Research highlights: → We study photoinduced absorption for two Ag NP deposited on the ITO. → The higher resistance eof the NP favors larger photoinduced changes. → Principal role is played by nanointerfaces. - Abstract: Substantial changes of absorption after illumination by 300 mW continuous wave green laser at 532 nm were observed. The effect of indium tin oxide (ITO) substrate was explored versus Ag nanoparticles (AgNPs) size, their regularity and surface plasmon resonance. The ITO substrate features play a crucial role for the formation of homogenous AgNPs. The attachments of AgNPs on ITO surface as well as their homogeneity are significantly changed under the influence of the laser treatment. We study the Ag NP deposited on the two different substrates which play a crucial role in the photoinduced absorption. The dependence of the photoinduced absorption versus the time of optical treatment is explained within a framework of the photopolarization of the particular trapping levels on the borders between the ITO substrate and the Ag NP.

  10. Photoinduced absorption of Ag nanoparticles deposited on ITO substrate

    Energy Technology Data Exchange (ETDEWEB)

    Ozga, K., E-mail: cate.ozga@wp.pl [Chair of Public Health, Czestochowa University of Technology, Al. Armii Krajowej 36B, 42-200 Czestochowa (Poland); Oyama, M. [Department of Material Chemisrty, Graduate School of Engineering, Kyoto University, Nishikyo-ku, Kyoto 615-8520 (Japan); Szota, M. [Institute of Materials Science and Engineering, Technical University of Czestochowa, al. Armii Krajowej 19, 42-200 Czestochowa (Poland); Nabialek, M. [Institute of Physics, Czestochowa University of Technology, Al. Armii Krajowej 19, 42-200 Czestochowa (Poland); Kityk, I.V. [Electrical Engineering Department, Czestochowa University of Technology, Al. Armii Krajowej 17/19, 42-200 Czestochowa (Poland); Slezak, A. [Chair of Public Health, Czestochowa University of Technology, Al. Armii Krajowej 36B, 42-200 Czestochowa (Poland); Umar, A.A. [Institute of Micronegineering and Nanoelectronics Universiti Kebangsaan Malaysia 43600 UKM bangi, Selangor D.E. (Malaysia); Nouneh, K. [INANOTECH, Institute of Nanomaterials and Nanotechnology, MAScIR (Moroccan Advanced Science, Innovation and Research Foundation), ENSET, Av. Armee Royale, 10100, Rabat (Morocco)

    2011-06-15

    Research highlights: > We study photoinduced absorption for two Ag NP deposited on the ITO. > The higher resistance eof the NP favors larger photoinduced changes. > Principal role is played by nanointerfaces. - Abstract: Substantial changes of absorption after illumination by 300 mW continuous wave green laser at 532 nm were observed. The effect of indium tin oxide (ITO) substrate was explored versus Ag nanoparticles (AgNPs) size, their regularity and surface plasmon resonance. The ITO substrate features play a crucial role for the formation of homogenous AgNPs. The attachments of AgNPs on ITO surface as well as their homogeneity are significantly changed under the influence of the laser treatment. We study the Ag NP deposited on the two different substrates which play a crucial role in the photoinduced absorption. The dependence of the photoinduced absorption versus the time of optical treatment is explained within a framework of the photopolarization of the particular trapping levels on the borders between the ITO substrate and the Ag NP.

  11. Band offsets in ITO/Ga2O3 heterostructures

    Science.gov (United States)

    Carey, Patrick H.; Ren, F.; Hays, David C.; Gila, B. P.; Pearton, S. J.; Jang, Soohwan; Kuramata, Akito

    2017-11-01

    The valence band offsets in rf-sputtered Indium Tin Oxide (ITO)/single crystal β-Ga2O3 (ITO/Ga2O3) heterostructures were measured with X-Ray Photoelectron Spectroscopy using the Kraut method. The bandgaps of the component materials in the heterostructure were determined by Reflection Electron Energy Loss Spectroscopy as 4.6 eV for Ga2O3 and 3.5 eV for ITO. The valence band offset was determined to be -0.78 ± 0.30 eV, while the conduction band offset was determined to be -0.32 ± 0.13 eV. The ITO/Ga2O3 system has a nested gap (type I) alignment. The use of a thin layer of ITO between a metal and the Ga2O3 is an attractive approach for reducing contact resistance on Ga2O3-based power electronic devices and solar-blind photodetectors.

  12. High-density carrier-accumulated and electrically stable oxide thin-film transistors from ion-gel gate dielectric.

    Science.gov (United States)

    Fujii, Mami N; Ishikawa, Yasuaki; Miwa, Kazumoto; Okada, Hiromi; Uraoka, Yukiharu; Ono, Shimpei

    2015-12-18

    The use of indium-gallium-zinc oxide (IGZO) has paved the way for high-resolution uniform displays or integrated circuits with transparent and flexible devices. However, achieving highly reliable devices that use IGZO for low-temperature processes remains a technological challenge. We propose the use of IGZO thin-film transistors (TFTs) with an ionic-liquid gate dielectric in order to achieve high-density carrier-accumulated IGZO TFTs with high reliability, and we discuss a distinctive mechanism for the degradation of this organic-inorganic hybrid device under long-term electrical stress. Our results demonstrated that an ionic liquid or gel gate dielectric provides highly reliable and low-voltage operation with IGZO TFTs. Furthermore, high-density carrier accumulation helps improve the TFT characteristics and reliability, and it is highly relevant to the electronic phase control of oxide materials and the degradation mechanism for organic-inorganic hybrid devices.

  13. Short-Term Synaptic Plasticity Regulation in Solution-Gated Indium-Gallium-Zinc-Oxide Electric-Double-Layer Transistors.

    Science.gov (United States)

    Wan, Chang Jin; Liu, Yang Hui; Zhu, Li Qiang; Feng, Ping; Shi, Yi; Wan, Qing

    2016-04-20

    In the biological nervous system, synaptic plasticity regulation is based on the modulation of ionic fluxes, and such regulation was regarded as the fundamental mechanism underlying memory and learning. Inspired by such biological strategies, indium-gallium-zinc-oxide (IGZO) electric-double-layer (EDL) transistors gated by aqueous solutions were proposed for synaptic behavior emulations. Short-term synaptic plasticity, such as paired-pulse facilitation, high-pass filtering, and orientation tuning, was experimentally emulated in these EDL transistors. Most importantly, we found that such short-term synaptic plasticity can be effectively regulated by alcohol (ethyl alcohol) and salt (potassium chloride) additives. Our results suggest that solution gated oxide-based EDL transistors could act as the platforms for short-term synaptic plasticity emulation.

  14. The influence of fibril composition and dimension on the performance of paper gated oxide transistors

    International Nuclear Information System (INIS)

    Pereira, L; Gaspar, D; Fortunato, E; Martins, R; Guerin, D; Delattre, A

    2014-01-01

    Paper electronics is a topic of great interest due the possibility of having low-cost, disposable and recyclable electronic devices. The final goal is to make paper itself an active part of such devices. In this work we present new approaches in the selection of tailored paper, aiming to use it simultaneously as substrate and dielectric in oxide based paper field effect transistors (FETs). From the work performed, it was observed that the gate leakage current in paper FETs can be reduced using a dense microfiber/nanofiber cellulose paper as the dielectric. Also, the stability of these devices against changes in relative humidity is improved. On other hand, if the pH of the microfiber/nanofiber cellulose pulp is modified by the addition of HCl, the saturation mobility of the devices increases up to 16 cm 2  V −1  s −1 , with an I ON /I OFF ratio close to 10 5 . (paper)

  15. High performance high-κ/metal gate complementary metal oxide semiconductor circuit element on flexible silicon

    KAUST Repository

    Sevilla, Galo T.

    2016-02-29

    Thinned silicon based complementary metal oxide semiconductor(CMOS)electronics can be physically flexible. To overcome challenges of limited thinning and damaging of devices originated from back grinding process, we show sequential reactive ion etching of silicon with the assistance from soft polymeric materials to efficiently achieve thinned (40 μm) and flexible (1.5 cm bending radius) silicon based functional CMOSinverters with high-κ/metal gate transistors. Notable advances through this study shows large area of silicon thinning with pre-fabricated high performance elements with ultra-large-scale-integration density (using 90 nm node technology) and then dicing of such large and thinned (seemingly fragile) pieces into smaller pieces using excimer laser. The impact of various mechanical bending and bending cycles show undeterred high performance of flexible siliconCMOSinverters. Future work will include transfer of diced silicon chips to destination site, interconnects, and packaging to obtain fully flexible electronic systems in CMOS compatible way.

  16. Comparative study of ITO and FTO thin films grown by spray pyrolysis

    International Nuclear Information System (INIS)

    Ait Aouaj, M.; Diaz, R.; Belayachi, A.; Rueda, F.; Abd-Lefdil, M.

    2009-01-01

    Tin doped indium oxide (ITO) and fluorine doped tin oxide (FTO) thin films have been prepared by one step spray pyrolysis. Both film types grown at 400 deg. C present a single phase, ITO has cubic structure and preferred orientation (4 0 0) while FTO exhibits a tetragonal structure. Scanning electron micrographs showed homogeneous surfaces with average grain size around 257 and 190 nm for ITO and FTO respectively. The optical properties have been studied in several ITO and FTO samples by transmittance and reflectance measurements. The transmittance in the visible zone is higher in ITO than in FTO layers with a comparable thickness, while the reflectance in the infrared zone is higher in FTO in comparison with ITO. The best electrical resistivity values, deduced from optical measurements, were 8 x 10 -4 and 6 x 10 -4 Ω cm for ITO (6% of Sn) and FTO (2.5% of F) respectively. The figure of merit reached a maximum value of 2.15 x 10 -3 Ω -1 for ITO higher than 0.55 x 10 -3 Ω -1 for FTO.

  17. Tuning the ITO work function by capacitively coupled plasma and its application in inverted organic solar cells

    International Nuclear Information System (INIS)

    Fang, Ming; Zhang, Chunmei; Chen, Qiang

    2016-01-01

    Highlights: • The work function of ITO was reduced by plasma treatment. • The reduction of the work function was attributed to the variation in chemical component of ITO surface. • The inverted solar cell without electron transport layer was fabricated using plasma-treated ITO. • Optimal power conversion efficiency of 3.22% was achieved. - Abstract: In this paper, we investigated the performance of inverted organic solar cells (OSCs) with plasma-treated indium tin oxide (ITO) as the cathode for omitting an electron transport layer. The Ar plasma was produced by capcitively coupled plasma setup under 20 Pa chamber pressure. For the device with the structure of plasma-treated ITO/P3HT:PCBM/MoO_3/Ag, a power conversion efficiency (PCE) of 3.22% was achieved, whereas PCE of 1.13% was recorded from the device fabricated with the pristine ITO. The photovoltaic performance was found to be dependent on the applied power of plasma. After analyzing by atomic force microscopy (AFM) and X-ray photoelectron spectroscopy (XPS), we concluded that the chemical component variation of ITOs surface resulted in the decrease of ITO work function, which meant that the ITO Fermi level became shallow relative to the vacuum level. The low work function of ITO should be responsible for the improvement of inverted OSCs because of the better energy level alignment between ITO and the photoactive layer.

  18. Tuning the ITO work function by capacitively coupled plasma and its application in inverted organic solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Fang, Ming [Laboratory of Plasma Physics and Materials, Beijing Institute of Graphic Communication, Beijing (China); Zhang, Chunmei, E-mail: zhangchunmei@bigc.edu.cn [Laboratory of Plasma Physics and Materials, Beijing Institute of Graphic Communication, Beijing (China); Chen, Qiang [Laboratory of Plasma Physics and Materials, Beijing Institute of Graphic Communication, Beijing (China); State Key Laboratory of Electrical Insulation and Power Equipment, Xi’an Jiaotong University, Xi’an (China)

    2016-11-01

    Highlights: • The work function of ITO was reduced by plasma treatment. • The reduction of the work function was attributed to the variation in chemical component of ITO surface. • The inverted solar cell without electron transport layer was fabricated using plasma-treated ITO. • Optimal power conversion efficiency of 3.22% was achieved. - Abstract: In this paper, we investigated the performance of inverted organic solar cells (OSCs) with plasma-treated indium tin oxide (ITO) as the cathode for omitting an electron transport layer. The Ar plasma was produced by capcitively coupled plasma setup under 20 Pa chamber pressure. For the device with the structure of plasma-treated ITO/P3HT:PCBM/MoO{sub 3}/Ag, a power conversion efficiency (PCE) of 3.22% was achieved, whereas PCE of 1.13% was recorded from the device fabricated with the pristine ITO. The photovoltaic performance was found to be dependent on the applied power of plasma. After analyzing by atomic force microscopy (AFM) and X-ray photoelectron spectroscopy (XPS), we concluded that the chemical component variation of ITOs surface resulted in the decrease of ITO work function, which meant that the ITO Fermi level became shallow relative to the vacuum level. The low work function of ITO should be responsible for the improvement of inverted OSCs because of the better energy level alignment between ITO and the photoactive layer.

  19. ITO/InP solar cells: A comparison of devices fabricated by ion beam and RF sputtering of the ITO

    Science.gov (United States)

    Coutts, T. J.

    1987-01-01

    This work was performed with the view of elucidating the behavior of indium tin oxide/indium phosphide (ITO/InP) solar cells prepared by RF and ion beam sputtering. It was found that using RF sputter deposition of the ITO always leads to more efficient devices than ion beam sputter deposition. An important aspect of the former technique is the exposure of the single crystal p-InP substrates to a very low plasma power prior to deposition. Substrates treated in this manner have also been used for ion beam deposition of ITO. In this case the cells behave very similarly to the RF deposited cells, thus suggesting that the lower power plasma exposure (LPPE) is the crucial process step.

  20. Research on total-dose hardening for H-gate PD NMOSFET/SIMOX by ion implanting into buried oxide

    International Nuclear Information System (INIS)

    Qian Cong; Zhang Zhengxuan; Zhang Feng; Lin Chenglu

    2008-01-01

    In this work, we investigate the back-gate I-V characteristics for two kinds of NMOSFET/SIMOX transistors with H gate structure fabricated on two different SOI wafers. A transistors are made on the wafer implanted with Si + and then annealed in N 2 , and B transistors are made on the wafer without implantation and annealing. It is demonstrated experimentally that A transistors have much less back-gate threshold voltage shift ΔV th than B transistors under X-ray total close irradiation. Subthreshold charge separation technique is employed to estimate the build-up of oxide charge and interface traps during irradiation, showing that the reduced ΔV th for A transistors is mainly due to its less build-up of oxide charge than B transistors. Photo-luminescence (PL) research indicates that Si implantation results in the formation of silicon nanocrystalline (nanocluster) whose size increases with the implant dose. This structure can trap electrons to compensate the positive charge build-up in the buried oxide during irradiation, and thus reduce the threshold voltage negative shift. (authors)

  1. Bannai-Ito polynomials and dressing chains

    OpenAIRE

    Derevyagin, Maxim; Tsujimoto, Satoshi; Vinet, Luc; Zhedanov, Alexei

    2012-01-01

    Schur-Delsarte-Genin (SDG) maps and Bannai-Ito polynomials are studied. SDG maps are related to dressing chains determined by quadratic algebras. The Bannai-Ito polynomials and their kernel polynomials -- the complementary Bannai-Ito polynomials -- are shown to arise in the framework of the SDG maps.

  2. Development of low temperature RF magnetron sputtered ITO films on flexible substrate

    Energy Technology Data Exchange (ETDEWEB)

    Muneshwar, T.P.; Varma, V.; Meshram, N; Soni, S.; Dusane, R.O. [Department of Metallurgical Engineering and Materials Science, Indian Institute of Technology Bombay, Powai, Mumbai 400076 (India)

    2010-09-15

    Indium tin oxide (ITO) is one of the important materials used as transparent conducting oxide (TCO) layer in thin film solar cells, digital displays and other similar applications. For applications involving flexible polymeric substrates, it is important that deposition of ITO is carried out at near room temperature. This requirement puts constraint on stoichiometry leading to undesired electrical and optical properties. Effect of oxygen partial pressure on ITO films deposited on flexible Kapton {sup registered} by the RF magnetron sputtering is reported in this paper. (author)

  3. Controllably annealed CuO-nanoparticle modified ITO electrodes: Characterisation and electrochemical studies

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Tong; Su, Wen; Fu, Yingyi [College of Chemistry, Beijing Normal University, Beijing 100875 (China); Hu, Jingbo, E-mail: hujingbo@bnu.edu.cn [College of Chemistry, Beijing Normal University, Beijing 100875 (China); Key Laboratory of Beam Technology and Material Modification of Ministry of Education, Beijing Normal University, Beijing 100875 (China)

    2016-12-30

    Graphical abstract: We report a simple and controllable synthesis of CuO-nanoparticle-modified ITO by employing a combination of ion-implantation and annealing methods for the first time. The optimum CuO/ITO electrode shows uniform morphology, highly accessible surface area, long-term stability and excellent electrochemical performance towards biomolecules such as glucose in alkaline solution. - Highlights: • Controllably annealed CuO/ITO electrode was synthesized for the first time. • The generation mechanism of CuO nanoparticles is revealed. • The optimum CuO/ITO electrode shows excellent electrochemical performance. • A reference for the controllable preparation of other metal oxide nanoparticles. - Abstract: In this paper, we report a facile and controllable two-step approach to produce indium tin oxide electrodes modified by copper(II) oxide nanoparticles (CuO/ITO) through ion implantation and annealing methods. After annealing treatment, the surface morphology of the CuO/ITO substrate changed remarkably and exhibited highly electroactive sites and a high specific surface area. The effects of annealing treatment on the synthesis of CuO/ITO were discussed based on various instruments’ characterisations, and the possible mechanism by which CuO nanoparticles were generated was also proposed in this work. Cyclic voltammetric results indicated that CuO/ITO electrodes exhibited effective catalytic responses toward glucose in alkaline solution. Under optimal experimental conditions, the proposed CuO/ITO electrode showed sensitivity of 450.2 μA cm{sup −2} mM{sup −1} with a linear range of up to ∼4.4 mM and a detection limit of 0.7 μM (S/N = 3). Moreover, CuO/ITO exhibited good poison resistance, reproducibility, and stability properties.

  4. Low-temperature formation of high-quality gate oxide by ultraviolet irradiation on spin-on-glass

    International Nuclear Information System (INIS)

    Usuda, R.; Uchida, K.; Nozaki, S.

    2015-01-01

    Although a UV cure was found to effectively convert a perhydropolysilazane (PHPS) spin-on-glass film into a dense SiO x film at low temperature, the electrical characteristics were never reported in order to recommend the use of PHPS as a gate-oxide material that can be formed at low temperature. We have formed a high-quality gate oxide by UV irradiation on the PHPS film, and obtained an interface midgap trap density of 3.4 × 10 11  cm −2 eV −1 by the UV wet oxidation and UV post-metallization annealing (PMA), at a temperature as low as 160 °C. In contrast to the UV irradiation using short-wavelength UV light, which is well known to enhance oxidation by the production of the excited states of oxygen, the UV irradiation was carried out using longer-wavelength UV light from a metal halide lamp. The UV irradiation during the wet oxidation of the PHPS film generates electron-hole pairs. The electrons ionize the H 2 O molecules and facilitate dissociation of the molecules into H and OH − . The OH − ions are highly reactive with Si and improve the stoichiometry of the oxide. The UV irradiation during the PMA excites the electrons from the accumulation layer, and the built-in electric field makes the electron injection into the oxide much easier. The electrons injected into the oxide recombine with the trapped holes, which have caused a large negative flat band voltage shift after the UV wet oxidation, and also ionize the H 2 O molecules. The ionization results in the electron stimulated dissociation of H 2 O molecules and the decreased interface trap density

  5. Low-temperature formation of high-quality gate oxide by ultraviolet irradiation on spin-on-glass

    Energy Technology Data Exchange (ETDEWEB)

    Usuda, R.; Uchida, K.; Nozaki, S., E-mail: nozaki@ee.uec.ac.jp [Graduate School of Informatics and Engineering, The University of Electro-Communications, 1-5-1 Chofugaoka, Chofu-shi, Tokyo 182-1515 (Japan)

    2015-11-02

    Although a UV cure was found to effectively convert a perhydropolysilazane (PHPS) spin-on-glass film into a dense SiO{sub x} film at low temperature, the electrical characteristics were never reported in order to recommend the use of PHPS as a gate-oxide material that can be formed at low temperature. We have formed a high-quality gate oxide by UV irradiation on the PHPS film, and obtained an interface midgap trap density of 3.4 × 10{sup 11 }cm{sup −2} eV{sup −1} by the UV wet oxidation and UV post-metallization annealing (PMA), at a temperature as low as 160 °C. In contrast to the UV irradiation using short-wavelength UV light, which is well known to enhance oxidation by the production of the excited states of oxygen, the UV irradiation was carried out using longer-wavelength UV light from a metal halide lamp. The UV irradiation during the wet oxidation of the PHPS film generates electron-hole pairs. The electrons ionize the H{sub 2}O molecules and facilitate dissociation of the molecules into H and OH{sup −}. The OH{sup −} ions are highly reactive with Si and improve the stoichiometry of the oxide. The UV irradiation during the PMA excites the electrons from the accumulation layer, and the built-in electric field makes the electron injection into the oxide much easier. The electrons injected into the oxide recombine with the trapped holes, which have caused a large negative flat band voltage shift after the UV wet oxidation, and also ionize the H{sub 2}O molecules. The ionization results in the electron stimulated dissociation of H{sub 2}O molecules and the decreased interface trap density.

  6. Investigation on surface, electrical and optical properties of ITO-Ag-ITO coated glass

    International Nuclear Information System (INIS)

    Aslan Necdet; Sen, Tuba; Coruhlu Turgay; Senturk Kenan; Keskin Sinan; Seker Sedat; Dobrovolskiy Andrey

    2015-01-01

    The aim of this work was to study the optical and electrical properties of thick ITO-Ag-ITO multilayer coating onto glass. ITO-Ag-ITO coatings with thickness of ITO layers 110 nm, 185 nm and intermediate Ag layer thickness 40 nm were prepared by magnetron sputtering. The optical, electrical and atomic properties of the coating were examined by scanning electron microscope, atomic force microscope, X-ray diffraction analysis and ultraviolet-visible spectroscopy

  7. Effect of N,C-ITO on Composite N,C-Ti/N,C-ITO/ITO Electrode Used for Photoelectrochemical Degradation of Aqueous Pollutant with Simultaneous Hydrogen Production

    Directory of Open Access Journals (Sweden)

    Kee-Rong Wu

    2012-01-01

    Full Text Available This study reports the effect of N,C-ITO (indium tin oxide layer on composite N,C-TiO2/N,C-ITO/ITO (Ti/TO electrode used for efficient photoelectrocatalytic (PEC degradation of aqueous pollutant with simultaneous hydrogen production. The structural properties of the composite Ti/TO electrode that determined by X-ray diffraction and Raman scattering, show primarily the crystallized anatase TiO2 phase and distinct diffraction patterns of polycrystalline In2O3 phase. Under solar light illumination, the composite Ti/TO electrode yields simultaneously a hydrogen production rate of 12.0 μmol cm−2 h−1 and degradation rate constant of  cm−2 h−1 in organic pollutant. It implies that the overlaid N,C-TiO2 layer enhances not only the photocurrent response of the composite Ti/TO electrode at entire applied potentials, but also the flat band potential; a shift of about 0.1 V toward cathode, which is desperately beneficial in the PEC process. In light of the X-ray photoelectron spectroscopy findings, these results are attributable partly to the synergetic effect of N,C-codoping into the TiO2 and ITO lattices on their band gap narrowing and photosensitizing as well. Thus, the Ti/TO electrode can potentially serve an efficient PEC electrode for simultaneous pollutant degradation and hydrogen production.

  8. INFLUENCE OF SUBSTRATE TEMPERATURE ON STRUCTURAL, ELECTRICAL AND OPTICAL PROPERTIES OF ITO THIN FILMS PREPARED BY RF MAGNETRON SPUTTERING

    OpenAIRE

    BO HE; LEI ZHAO; JING XU; HUAIZHONG XING; SHAOLIN XUE; MENG JIANG

    2013-01-01

    In this paper, we investigated indium-tin-oxide (ITO) thin films on glass substrates deposited by RF magnetron sputtering using ceramic target to find the optimal condition for fabricating optoelectronic devices. The structural, electrical and optical properties of the ITO films prepared at various substrate temperatures were investigated. The results indicate the grain size increases with substrate temperature increases. As the substrate temperature grew up, the resistivity of ITO films grea...

  9. Improved ITO thin films for photovoltaic applications with a thin ZnO layer by sputtering

    International Nuclear Information System (INIS)

    Herrero, J.; Guillen, C.

    2004-01-01

    The improvement of the optical and electrical characteristics of indium tin oxide (ITO) layers is pursued to achieve a higher efficiency in its application as frontal electrical contacts in thin film photovoltaic devices. In order to take advantage of the polycrystalline structure of ZnO films as growth support, the properties of ITO layers prepared at room temperature by sputtering onto bare and ZnO-coated substrates have been analyzed using X-ray diffraction, optical and electrical measurements. It has been found that by inserting a thin ZnO layer, the ITO film resistivity can be reduced as compared to that of a single ITO film with similar optical transmittance. The electrical quality improvement is related to ITO grain growth enhancement onto the polycrystalline ZnO underlayer

  10. ITO films with enhanced electrical properties deposited on unheated ZnO-coated polymer substrates

    International Nuclear Information System (INIS)

    Nunes de Carvalho, C.; Lavareda, G.; Fortunato, E.; Alves, H.; Goncalves, A.; Varela, J.; Nascimento, R.; Amaral, A.

    2005-01-01

    Indium tin oxide (ITO) films were deposited by radio frequency (rf)-plasma enhanced reactive thermal evaporation (rf-PERTE) at room temperature on intrinsic ZnO/polymer substrates to enhance their electrical and structural properties. The polymer substrate used is polyethylene terephthalate (PET). The thickness of the ZnO films varied in the range 50-150 nm. The average thickness of the ITO films is of about 170 nm. Results show that ITO deposited on bare PET substrates exhibit: an average visible transmittance of about 85% and an electrical resistivity of 5.6 x 10 -2 Ω cm. ITO on ZnO/PET substrates show the optical quality practically preserved and the resistivity decreased to a minimum value of 1.9x10 -3 Ω cm for ZnO layers 125 nm thick. The electrical properties of ITO on ZnO/PET are largely improved by the increase in carrier mobility

  11. Molecular-beam-deposited yttrium-oxide dielectrics in aluminum-gated metal - oxide - semiconductor field-effect transistors: Effective electron mobility

    International Nuclear Information System (INIS)

    Ragnarsson, L.-A degree.; Guha, S.; Copel, M.; Cartier, E.; Bojarczuk, N. A.; Karasinski, J.

    2001-01-01

    We report on high effective mobilities in yttrium-oxide-based n-channel metal - oxide - semiconductor field-effect transistors (MOSFETs) with aluminum gates. The yttrium oxide was grown in ultrahigh vacuum using a reactive atomic-beam-deposition system. Medium-energy ion-scattering studies indicate an oxide with an approximate composition of Y 2 O 3 on top of a thin layer of interfacial SiO 2 . The thickness of this interfacial oxide as well as the effective mobility are found to be dependent on the postgrowth anneal conditions. Optimum conditions result in mobilities approaching that of SiO 2 -based MOSFETs at higher fields with peak mobilities at approximately 210 cm 2 /Vs. [copyright] 2001 American Institute of Physics

  12. Ultrabroadband terahertz characterization of highly doped ZnO and ITO

    DEFF Research Database (Denmark)

    Wang, Tianwu; Zalkovskij, Maksim; Iwaszczuk, Krzysztof

    2015-01-01

    The broadband complex conductivities of transparent conducting oxides (TCO), namely, aluminum-doped zinc oxide (AZO), gallium-doped zinc oxide (GZO) and tin-doped indium oxide (ITO), were investigated by using THz-TDS from 0.5 to 18 THz. The complex conductivities were accurately calculated using...

  13. The TDDB Characteristics of Ultra-Thin Gate Oxide MOS Capacitors under Constant Voltage Stress and Substrate Hot-Carrier Injection

    Directory of Open Access Journals (Sweden)

    Jingyu Shen

    2018-01-01

    Full Text Available The breakdown characteristics of ultra-thin gate oxide MOS capacitors fabricated in 65 nm CMOS technology under constant voltage stress and substrate hot-carrier injection are investigated. Compared to normal thick gate oxide, the degradation mechanism of time-dependent dielectric breakdown (TDDB of ultra-thin gate oxide is found to be different. It is found that the gate current (Ig of ultra-thin gate oxide MOS capacitor is more likely to be induced not only by Fowler-Nordheim (F-N tunneling electrons, but also by electrons surmounting barrier and penetrating electrons in the condition of constant voltage stress. Moreover it is shown that the time to breakdown (tbd under substrate hot-carrier injection is far less than that under constant voltage stress when the failure criterion is defined as a hard breakdown according to the experimental results. The TDDB mechanism of ultra-thin gate oxide will be detailed. The differences in TDDB characteristics of MOS capacitors induced by constant voltage stress and substrate hot-carrier injection will be also discussed.

  14. Off-line wafer level reliability control: unique measurement method to monitor the lifetime indicator of gate oxide validated within bipolar/CMOS/DMOS technology

    Science.gov (United States)

    Gagnard, Xavier; Bonnaud, Olivier

    2000-08-01

    We have recently published a paper on a new rapid method for the determination of the lifetime of the gate oxide involved in a Bipolar/CMOS/DMOS technology (BCD). Because this previous method was based on a current measurement with gate voltage as a parameter needing several stress voltages, it was applied only by lot sampling. Thus, we tried to find an indicator in order to monitor the gate oxide lifetime during the wafer level parametric test and involving only one measurement of the device on each wafer test cell. Using the Weibull law and Crook model, combined with our recent model, we have developed a new test method needing only one electrical measurement of MOS capacitor to monitor the quality of the gate oxide. Based also on a current measurement, the parameter is the lifetime indicator of the gate oxide. From the analysis of several wafers, we gave evidence of the possibility to detect a low performance wafer, which corresponds to the infantile failure on the Weibull plot. In order to insert this new method in the BCD parametric program, a parametric flowchart was established. This type of measurement is an important challenges, because the actual measurements, breakdown charge, Qbd, and breakdown electric field, Ebd, at parametric level and Ebd and interface states density, Dit during the process cannot guarantee the gate oxide lifetime all along fabrication process. This indicator measurement is the only one, which predicts the lifetime decrease.

  15. First-principles simulations of the leakage current in metal-oxide-semiconductor structures caused by oxygen vacancies in HfO2 high-K gate dielectric

    International Nuclear Information System (INIS)

    Mao, L.F.; Wang, Z.O.

    2008-01-01

    HfO 2 high-K gate dielectric has been used as a new gate dielectric in metal-oxide-semiconductor structures. First-principles simulations are used to study the effects of oxygen vacancies on the tunneling current through the oxide. A level which is nearly 1.25 eV from the bottom of the conduction band is introduced into the bandgap due to the oxygen vacancies. The tunneling current calculations show that the tunneling currents through the gate oxide with different defect density possess the typical characteristic of stress-induced leakage current. Further analysis shows that the location of oxygen vacancies will have a marked effect on the tunneling current. The largest increase in the tunneling current caused by oxygen vacancies comes about at the middle oxide field when defects are located at the middle of the oxide. (copyright 2008 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  16. Understanding the Structure of High-K Gate Oxides - Oral Presentation

    Energy Technology Data Exchange (ETDEWEB)

    Miranda, Andre [SLAC National Accelerator Lab., Menlo Park, CA (United States)

    2015-08-25

    Hafnium Oxide (HfO2) amorphous thin films are being used as gate oxides in transistors because of their high dielectric constant (κ) over Silicon Dioxide. The present study looks to find the atomic structure of HfO2 thin films which hasn’t been done with the technique of this study. In this study, two HfO2 samples were studied. One sample was made with thermal atomic layer deposition (ALD) on top of a Chromium and Gold layer on a silicon wafer. The second sample was made with plasma ALD on top of a Chromium and Gold layer on a Silicon wafer. Both films were deposited at a thickness of 50nm. To obtain atomic structure information, Grazing Incidence X-ray diffraction (GIXRD) was carried out on the HfO2 samples. Because of this, absorption, footprint, polarization, and dead time corrections were applied to the scattering intensity data collected. The scattering curves displayed a difference in structure between the ALD processes. The plasma ALD sample showed the broad peak characteristic of an amorphous structure whereas the thermal ALD sample showed an amorphous structure with characteristics of crystalline materials. This appears to suggest that the thermal process results in a mostly amorphous material with crystallites within. Further, the scattering intensity data was used to calculate a pair distribution function (PDF) to show more atomic structure. The PDF showed atom distances in the plasma ALD sample had structure up to 10 Å, while the thermal ALD sample showed the same structure below 10 Å. This structure that shows up below 10 Å matches the bond distances of HfO2 published in literature. The PDF for the thermal ALD sample also showed peaks up to 20 Å, suggesting repeating atomic spacing outside the HfO2 molecule in the sample. This appears to suggest that there is some crystalline structure within the thermal ALD sample.

  17. Epitaxial ZnO gate dielectrics deposited by RF sputter for AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistors

    Science.gov (United States)

    Yoon, Seonno; Lee, Seungmin; Kim, Hyun-Seop; Cha, Ho-Young; Lee, Hi-Deok; Oh, Jungwoo

    2018-01-01

    Radio frequency (RF)-sputtered ZnO gate dielectrics for AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistors (MOS-HEMTs) were investigated with varying O2/Ar ratios. The ZnO deposited with a low oxygen content of 4.5% showed a high dielectric constant and low interface trap density due to the compensation of oxygen vacancies during the sputtering process. The good capacitance-voltage characteristics of ZnO-on-AlGaN/GaN capacitors resulted from the high crystallinity of oxide at the interface, as investigated by x-ray diffraction and high-resolution transmission electron microscopy. The MOS-HEMTs demonstrated comparable output electrical characteristics with conventional Ni/Au HEMTs but a lower gate leakage current. At a gate voltage of -20 V, the typical gate leakage current for a MOS-HEMT with a gate length of 6 μm and width of 100 μm was found to be as low as 8.2 × 10-7 mA mm-1, which was three orders lower than that of the Ni/Au Schottky gate HEMT. The reduction of the gate leakage current improved the on/off current ratio by three orders of magnitude. These results indicate that RF-sputtered ZnO with a low O2/Ar ratio is a good gate dielectric for high-performance AlGaN/GaN MOS-HEMTs.

  18. A simple two-step method to fabricate highly transparent ITO/polymer nanocomposite films

    International Nuclear Information System (INIS)

    Liu, Haitao; Zeng, Xiaofei; Kong, Xiangrong; Bian, Shuguang; Chen, Jianfeng

    2012-01-01

    Highlights: ► A simple two-step method without further surface modification step was employed. ► ITO nanoparticles were easily to be uniformly dispersed in polymer matrix. ► ITO/polymer nanocomposite film had high transparency and UV/IR blocking properties. - Abstract: Transparent functional indium tin oxide (ITO)/polymer nanocomposite films were fabricated via a simple approach with two steps. Firstly, the functional monodisperse ITO nanoparticles were synthesized via a facile nonaqueous solvothermal method using bifunctional chemical agent (N-methyl-pyrrolidone, NMP) as the reaction solvent and surface modifier. Secondly, the ITO/acrylics polyurethane (PUA) nanocomposite films were fabricated by a simple sol-solution mixing method without any further surface modification step as often employed traditionally. Flower-like ITO nanoclusters with about 45 nm in diameter were mono-dispersed in ethyl acetate and each nanocluster was assembled by nearly spherical nanoparticles with primary size of 7–9 nm in diameter. The ITO nanoclusters exhibited an excellent dispersibility in polymer matrix of PUA, remaining their original size without any further agglomeration. When the loading content of ITO nanoclusters reached to 5 wt%, the transparent functional nanocomposite film featured a high transparency more than 85% in the visible light region (at 550 nm), meanwhile cutting off near-infrared radiation about 50% at 1500 nm and blocking UV ray about 45% at 350 nm. It could be potential for transparent functional coating materials applications.

  19. Properties of Ce-doped ITO films deposited on polymer substrate by DC magnetron sputtering

    International Nuclear Information System (INIS)

    Kang, Y.M.; Kwon, S.H.; Choi, J.H.; Cho, Y.J.; Song, P.K.

    2010-01-01

    Ce-doped indium tin oxide (ITO:Ce) films were deposited on flexible polyimide substrates by DC magnetron sputtering using ITO targets containing various CeO 2 contents (CeO 2 : 0, 0.5, 3.0, 4.0, 6.0 wt.%) at room temperature and post-annealed at 200 o C. The crystallinity of the ITO films decreased with increasing Ce content, and it led to a decrease in surface roughness. In addition, a relatively small change in resistance in dynamic stress mode was obtained for ITO:Ce films even after the annealing at high temperature (200 o C). The minimum resistivity of the amorphous ITO:Ce films was 3.96 x 10 -4 Ωcm, which was deposited using a 3.0 wt.% CeO 2 doped ITO target. The amorphous ITO:Ce films not only have comparable electrical properties to the polycrystalline films but also have a crystallization temperature > 200 o C. In addition, the amorphous ITO:Ce film showed stable mechanical properties in the bended state.

  20. Memory and learning behaviors mimicked in nanogranular SiO2-based proton conductor gated oxide-based synaptic transistors.

    Science.gov (United States)

    Wan, Chang Jin; Zhu, Li Qiang; Zhou, Ju Mei; Shi, Yi; Wan, Qing

    2013-11-07

    In neuroscience, signal processing, memory and learning function are established in the brain by modifying ionic fluxes in neurons and synapses. Emulation of memory and learning behaviors of biological systems by nanoscale ionic/electronic devices is highly desirable for building neuromorphic systems or even artificial neural networks. Here, novel artificial synapses based on junctionless oxide-based protonic/electronic hybrid transistors gated by nanogranular phosphorus-doped SiO2-based proton-conducting films are fabricated on glass substrates by a room-temperature process. Short-term memory (STM) and long-term memory (LTM) are mimicked by tuning the pulse gate voltage amplitude. The LTM process in such an artificial synapse is due to the proton-related interfacial electrochemical reaction. Our results are highly desirable for building future neuromorphic systems or even artificial networks via electronic elements.

  1. Improvement in gate bias stress instability of amorphous indium-gallium-zinc oxide thin-film transistors using microwave irradiation

    International Nuclear Information System (INIS)

    Jo, Kwang-Won; Cho, Won-Ju

    2014-01-01

    In this study, we evaluated the effects of microwave irradiation (MWI) post-deposition-annealing (PDA) treatment on the gate bias stress instability of amorphous indium-gallium-zinc oxide thin-film transistors (a-IGZO TFTs) and compared the results with a conventional thermal annealing PDA treatment. The MWI-PDA-treated a-IGZO TFTs exhibited enhanced electrical performance as well as improved long-term stability with increasing microwave power. The positive turn-on voltage shift (ΔV ON ) as a function of stress time with positive bias and varying temperature was precisely modeled on a stretched-exponential equation, suggesting that charge trapping is a dominant mechanism in the instability of MWI-PDA-treated a-IGZO TFTs. The characteristic trapping time and average effective barrier height for electron transport indicate that the MWI-PDA treatment effectively reduces the defects in a-IGZO TFTs, resulting in a superior resistance against gate bias stress

  2. Long-Term Synaptic Plasticity Emulated in Modified Graphene Oxide Electrolyte Gated IZO-Based Thin-Film Transistors.

    Science.gov (United States)

    Yang, Yi; Wen, Juan; Guo, Liqiang; Wan, Xiang; Du, Peifu; Feng, Ping; Shi, Yi; Wan, Qing

    2016-11-09

    Emulating neural behaviors at the synaptic level is of great significance for building neuromorphic computational systems and realizing artificial intelligence. Here, oxide-based electric double-layer (EDL) thin-film transistors were fabricated using 3-triethoxysilylpropylamine modified graphene oxide (KH550-GO) electrolyte as the gate dielectrics. Resulting from the EDL effect and electrochemical doping between mobile protons and the indium-zinc-oxide channel layer, long-term synaptic plasticity was emulated in our devices. Synaptic functions including long-term memory, synaptic temporal integration, and dynamic filters were successfully reproduced. In particular, spike rate-dependent plasticity (SRDP), one of the basic learning rules of long-term plasticity in the neural network where the synaptic weight changes according to the rate of presynaptic spikes, was emulated in our devices. Our results may facilitate the development of neuromorphic computational systems.

  3. Analysis of chemical bond states and electrical properties of stacked AlON/HfO{sub 2} gate oxides formed by using a layer-by-layer technique

    Energy Technology Data Exchange (ETDEWEB)

    Choi, Wonjoon; Lee, Jonghyun; Yang, Jungyup; Kim, Chaeok; Hong, Jinpyo; Nahm, Tschanguh; Byun, Byungsub; Kim, Moseok [Hanyang University, Seoul (Korea, Republic of)

    2006-06-15

    Stacked AlON/HfO{sub 2} thin films for gate oxides in metal-oxide-semiconductor devices are successfully prepared on Si substrates by utilizing a layer-by-layer technique integrated with an off-axis RF remote plasma sputtering process at room temperature. This off-axis structure is designed to improve the uniformity and the quality of gate oxide films. Also, a layer-by-layer technique is used to control the interface layer between the gate oxide and the Si substrate. The electrical properties of our stacked films are characterized by using capacitance versus voltage and leakage current versus voltage measurements. The stacked AlON/HfO{sub 2} gate oxide exhibits a low leakage current of about 10{sup -6} A/cm{sup 2} and a high dielectric constant value of 14.26 by effectively suppressing the interface layer between gate oxide and Si substrate. In addition, the chemical bond states and the optimum thickness of each AlON and HfO{sub 2} thin film are analyzed using X-ray photoemission spectroscopy and transmission electron microscopy measurement.

  4. Atomic-Layer-Deposited SnO2 as Gate Electrode for Indium-Free Transparent Electronics

    KAUST Repository

    Alshammari, Fwzah Hamud

    2017-08-04

    Atomic-layer-deposited SnO2 is used as a gate electrode to replace indium tin oxide (ITO) in thin-film transistors and circuits for the first time. The SnO2 films deposited at 200 °C show low electrical resistivity of ≈3.1 × 10−3 Ω cm with ≈93% transparency in most of the visible range of the electromagnetic spectrum. Thin-film transistors fabricated with SnO2 gates show excellent transistor properties including saturation mobility of 15.3 cm2 V−1 s−1, a low subthreshold swing of ≈130 mV dec−1, a high on/off ratio of ≈109, and an excellent electrical stability under constant-voltage stressing conditions to the gate terminal. Moreover, the SnO2-gated thin-film transistors show excellent electrical characteristics when used in electronic circuits such as negative channel metal oxide semiconductor (NMOS) inverters and ring oscillators. The NMOS inverters exhibit a low propagation stage delay of ≈150 ns with high DC voltage gain of ≈382. A high oscillation frequency of ≈303 kHz is obtained from the output sinusoidal signal of the 11-stage NMOS inverter-based ring oscillators. These results show that SnO2 can effectively replace ITO in transparent electronics and sensor applications.

  5. Comparison study of ITO thin films deposited by sputtering at room temperature onto polymer and glass substrates

    International Nuclear Information System (INIS)

    Guillen, C.; Herrero, J.

    2005-01-01

    Indium tin oxide (ITO) thin films have been grown simultaneously onto glass and polymer substrates at room temperature by sputtering from ceramic target. The structure, morphology and electro-optical characteristics of the ITO/glass and ITO/polymer samples have been analyzed by X-ray diffraction, atomic force microscopy, four-point electrical measurements and spectrophotometry. In the selected experimental conditions, the polycrystalline ITO coating shows higher average grain size and higher conductivity, with similar visible transmittance, onto the polymer than onto the glass substrate

  6. Improvement in the luminous efficiency of MEH-PPV based light emitting diodes using zinc oxide nanorods grown by the electrochemical deposition technique on ITO substrates

    Energy Technology Data Exchange (ETDEWEB)

    Gupta, Rohini B; Kumar, Jitender; Madhwal, Devinder; Singh, Inderpreet; Nagpal, S; Bhatnagar, P K; Mathur, P C [Material Science Laboratory, Department of Electronic Science, University of Delhi South Campus, New Delhi (India); Kaur, I; Bhardwaj, L M, E-mail: email_rohini@rediffmail.com [Central Scientific Instruments Organization, Sector-30, Chandigarh (India)

    2011-07-01

    Zinc oxide (ZnO) nanorods grown by the electrochemical technique have been used to enhance the luminance of poly[2-methoxy-5-(2'-ethylhexoxy)-1,4-phenylenevinylene] (MEH-PPV)-based polymer light-emitting diodes. The luminance of the device with ZnO nanorods is found to increase by more than two times as compared with the device without ZnO nanorods. The diameter of the nanorods used in device fabrication was {approx}145 nm. The size of the nanorods was estimated from field emission scanning electron microscope images. Optical and structural characterizations of the nanorods were also performed by using absorption, photoluminescence and x-ray diffraction, confirming the formation of ZnO nanorods.

  7. Atomic Layer Deposition of Gallium Oxide Films as Gate Dielectrics in AlGaN/GaN Metal-Oxide-Semiconductor High-Electron-Mobility Transistors.

    Science.gov (United States)

    Shih, Huan-Yu; Chu, Fu-Chuan; Das, Atanu; Lee, Chia-Yu; Chen, Ming-Jang; Lin, Ray-Ming

    2016-12-01

    In this study, films of gallium oxide (Ga2O3) were prepared through remote plasma atomic layer deposition (RP-ALD) using triethylgallium and oxygen plasma. The chemical composition and optical properties of the Ga2O3 thin films were investigated; the saturation growth displayed a linear dependence with respect to the number of ALD cycles. These uniform ALD films exhibited excellent uniformity and smooth Ga2O3-GaN interfaces. An ALD Ga2O3 film was then used as the gate dielectric and surface passivation layer in a metal-oxide-semiconductor high-electron-mobility transistor (MOS-HEMT), which exhibited device performance superior to that of a corresponding conventional Schottky gate HEMT. Under similar bias conditions, the gate leakage currents of the MOS-HEMT were two orders of magnitude lower than those of the conventional HEMT, with the power-added efficiency enhanced by up to 9 %. The subthreshold swing and effective interfacial state density of the MOS-HEMT were 78 mV decade(-1) and 3.62 × 10(11) eV(-1) cm(-2), respectively. The direct-current and radio-frequency performances of the MOS-HEMT device were greater than those of the conventional HEMT. In addition, the flicker noise of the MOS-HEMT was lower than that of the conventional HEMT.

  8. Rat Aquaporin-5 Is pH-Gated Induced by Phosphorylation and Is Implicated in Oxidative Stress

    Directory of Open Access Journals (Sweden)

    Claudia Rodrigues

    2016-12-01

    Full Text Available Aquaporin-5 (AQP5 is a membrane water channel widely distributed in human tissues that was found up-regulated in different tumors and considered implicated in carcinogenesis in different organs and systems. Despite its wide distribution pattern and physiological importance, AQP5 short-term regulation was not reported and mechanisms underlying its involvement in cancer are not well defined. In this work, we expressed rat AQP5 in yeast and investigated mechanisms of gating, as well as AQP5’s ability to facilitate H2O2 plasma membrane diffusion. We found that AQP5 can be gated by extracellular pH in a phosphorylation-dependent manner, with higher activity at physiological pH 7.4. Moreover, similar to other mammalian AQPs, AQP5 is able to increase extracellular H2O2 influx and to affect oxidative cell response with dual effects: whereas in acute oxidative stress conditions AQP5 induces an initial higher sensitivity, in chronic stress AQP5 expressing cells show improved cell survival and resistance. Our findings support the involvement of AQP5 in oxidative stress and suggest AQP5 modulation by phosphorylation as a novel tool for therapeutics.

  9. High resolution laser patterning of ITO on PET substrate

    Science.gov (United States)

    Zhang, Tao; Liu, Di; Park, Hee K.; Yu, Dong X.; Hwang, David J.

    2013-03-01

    Cost-effective laser patterning of indium tin oxide (ITO) thin film coated on flexible polyethylene terephthalate (PET) film substrate for touch panel was studied. The target scribing width was set to the order of 10 μm in order to examine issues involved with higher feature resolution. Picosecond-pulsed laser and Q-switched nanosecond-pulsed laser at the wavelength of 532nm were applied for the comparison of laser patterning in picosecond and nanosecond regimes. While relatively superior scribing quality was achieved by picosecond laser, 532 nm wavelength showed a limitation due to weaker absorption in ITO film. In order to seek for cost-effective solution for high resolution ITO scribing, nanosecond laser pulses were applied and performance of 532nm and 1064nm wavelengths were compared. 1064nm wavelength shows relatively better scribing quality due to the higher absorption ratio in ITO film, yet at noticeable substrate damage. Through single pulse based scribing experiments, we inspected that reduced pulse overlapping is preferred in order to minimize the substrate damage during line patterning.

  10. Fast printing of thin, large area, ITO free electrochromics on flexible barrier foil

    DEFF Research Database (Denmark)

    Søndergaard, Roar R.; Hösel, Markus; Jørgensen, Mikkel

    2013-01-01

    Processing of large area, indium tin oxide (ITO) free electrochromic (EC) devices has been carried out using roll-toroll (R2R) processing. By use of very fine high-conductive silver grids with a hexagonal structure, it is possible to achieve good transparency of the electrode covered substrates...... and when used in EC devices switching times are similar to corresponding ITO devices. This is obtained without the uneven switching of larger areas, which is generally observed when using ITO because of its high-sheet resistance. The silver electrode structures for 18 ×18 cm2 devices can be processed...

  11. Effects of bias voltage on the properties of ITO films prepared on polymer substrates

    International Nuclear Information System (INIS)

    Lee, Jaehyeong; Jung, Hakkee; Lim, Donggun; Yang, Keajoon; Song, Woochang; Yi, Junsin

    2005-01-01

    The ITO (indium tin oxide) thin films were deposited on acryl, glass, PET, and poly-carbonate substrates by DC reactive magnetron sputtering. The bias voltage was changed from -20 to -80 V. As the bias voltage increased, the deposition rate of ITO films decreased regardless of substrate types. The roughness of the films on PET increased with the bias voltage. The study demonstrated that the bias improved the electrical and optical properties of ITO films regardless of substrate types. The lowest electrical resistivity of 5.5x10 -4 no. OMEGAno. -cm and visible transmittance of about 80% were achieved by applying a negative bias of -60 V

  12. Protonic/electronic hybrid oxide transistor gated by chitosan and its full-swing low voltage inverter applications

    Energy Technology Data Exchange (ETDEWEB)

    Chao, Jin Yu [Shanxi Province Key Laboratory High Gravity Chemical Engineering, North University of China, Taiyuan 030051 (China); Ningbo Institute of Material Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201 (China); Zhu, Li Qiang, E-mail: lqzhu@nimte.ac.cn; Xiao, Hui [Ningbo Institute of Material Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201 (China); Yuan, Zhi Guo, E-mail: ncityzg@163.com [Shanxi Province Key Laboratory High Gravity Chemical Engineering, North University of China, Taiyuan 030051 (China)

    2015-12-21

    Modulation of charge carrier density in condensed materials based on ionic/electronic interaction has attracted much attention. Here, protonic/electronic hybrid indium-zinc-oxide (IZO) transistors gated by chitosan based electrolyte were obtained. The chitosan-based electrolyte illustrates a high proton conductivity and an extremely strong proton gating behavior. The transistor illustrates good electrical performances at a low operating voltage of ∼1.0 V such as on/off ratio of ∼3 × 10{sup 7}, subthreshold swing of ∼65 mV/dec, threshold voltage of ∼0.3 V, and mobility of ∼7 cm{sup 2}/V s. Good positive gate bias stress stabilities are obtained. Furthermore, a low voltage driven resistor-loaded inverter was built by using an IZO transistor in series with a load resistor, exhibiting a linear relationship between the voltage gain and the supplied voltage. The inverter is also used for decreasing noises of input signals. The protonic/electronic hybrid IZO transistors have potential applications in biochemical sensors and portable electronics.

  13. Transparent conducting AZO and ITO films produced by pulsed laser ablation at 355 nm

    DEFF Research Database (Denmark)

    Thestrup, B.; Schou, Jørgen

    1999-01-01

    Thin films of aluminium-doped zinc oxide (AZO) and indium tin oxide (ITO) were deposited on glass substrates by laser ablation in an oxygen environment. The electrical and optical properties of films grown at various oxygen pressures were compared. With no substrate heating, highly transparent...... and conducting films were obtained with oxygen pressures between 15 and 23 mTorr for both materials. We obtained a specific resistivity of 1.8 x 10(-3) Omega cm for AZO and 1.1 x 10(-3) Omega cm for ITO. By heating the substrate to 160 degrees C or 200 degrees C, the resistivity was further reduced to 1.1 x 10......(-3) Omega cm for AZO and 3.9 x 10(-4) Omega cm for ITO. The average transmission of visible light (450-750 MI) was between 82% and 98% in most cases. The results suggest that AZO is a promising alternative to ITO....

  14. Spectroellipsometric study of the sol-gel nanocrystalline ITO multilayer films

    Energy Technology Data Exchange (ETDEWEB)

    Stoica, T.F.; Gartner, M.; Losurdo, M.; Teodorescu, V.; Blanchin, M.; Stoica, T.; Zaharescu, M

    2004-05-01

    Tin-doped indium oxide (ITO) thin films have been deposited by sol-gel process using 'sols' of indium and tin isopropoxides. The thickness of one deposited ITO layer is approximately 50 nm. The desired thickness was obtained by 1-5 successive depositions. The XTEM cross-sectional view of an ITO sample with five depositions showed a clear delimitation of the layers with an alternating structure dense/porous ITO layers. The void fraction in porous regions varies between 20 and 25%. Cubic bixbyite In{sub 2}O{sub 3} nanocrystals with size of 10-20 nm and no phases separation of tin oxide were observed. The optical properties of the films have been investigated by optical transmission and spectroscopic ellipsometry. Reliable optical constants and porosity are obtained only with the model of internal structure based on XTEM results.

  15. Ultrabroadband terahertz conductivity of highly doped ZnO and ITO

    DEFF Research Database (Denmark)

    Wang, Tianwu; Zalkovskij, Maksim; Iwaszczuk, Krzysztof

    2015-01-01

    The broadband complex conductivities of transparent conducting oxides (TCO), namely aluminum-doped zinc oxide (AZO), gallium-doped zinc oxide (GZO) and tin-doped indium oxide (ITO), were investigated by terahertz time domain spectroscopy (THz-TDS) in the frequency range from 0.5 to 18 THz using air...... to be more thickness dependent than GZO and ITO, indicating high importance of the surface states for electron dynamics in AZO. Finally, we measure the transmittance of the TCO films from 10 to 200 THz with Fourier transform infrared spectroscopy (FTIR) measurements, thus closing the gap between THz...

  16. 7 CFR 254.3 - Administration by an ITO.

    Science.gov (United States)

    2010-01-01

    ... 7 Agriculture 4 2010-01-01 2010-01-01 false Administration by an ITO. 254.3 Section 254.3... FOR INDIAN HOUSEHOLDS IN OKLAHOMA § 254.3 Administration by an ITO. (a) Applicability of part 253. All... any claim and to settle and adjust any claim against an ITO. (d) ITO administration. The ITO, acting...

  17. Morphology, structure and optical properties of sol-gel ITO thin films

    Energy Technology Data Exchange (ETDEWEB)

    Stoica, T.F.; Teodorescu, V.S.; Blanchin, M.G.; Stoica, T.A.; Gartner, M.; Losurdo, M.; Zaharescu, M

    2003-08-15

    The alkoxidic route and the spinning deposition were used to prepare monolayer sol-gel indium tin oxide (ITO) films. The morphology and crystalline structure were investigated by cross-section transmission electron microscopy (XTEM) and atomic force microscopy (AFM). The ITO sol-gel mono-layer contains three regions of different porosities. The basic crystalline structure is that of the In{sub 2}O{sub 3} lattice. The optical properties have been studied by optical transmission and spectroscopic ellipsometry.

  18. Sputtered gold-coated ITO nanowires by alternating depositions from Indium and ITO targets for application in surface-enhanced Raman scattering

    Science.gov (United States)

    Setti, Grazielle O.; Mamián-López, Mónica B.; Pessoa, Priscila R.; Poppi, Ronei J.; Joanni, Ednan; Jesus, Dosil P.

    2015-08-01

    Indium Tin oxide (ITO) nanowires were deposited by RF sputtering over oxidized silicon using ITO and Indium targets. The nanowires grew on the substrate with a catalyst layer of Indium by the vapor-liquid-solid (VLS) mechanism. Modifications in the deposition conditions affected the morphology and dimensions of the nanowires. The samples, after being covered with gold, were evaluated as surface-enhanced Raman scattering (SERS) substrates for detection of dye solutions and very good intensifications of the Raman signal were obtained. The SERS performance of the samples was also compared to that of a commercial SERS substrate and the results achieved were similar. To the best of our knowledge, this is the first time ITO nanowires were grown by the sputtering technique using oxide and metal targets.

  19. Metal-oxide assisted surface treatment of polyimide gate insulators for high-performance organic thin-film transistors.

    Science.gov (United States)

    Kim, Sohee; Ha, Taewook; Yoo, Sungmi; Ka, Jae-Won; Kim, Jinsoo; Won, Jong Chan; Choi, Dong Hoon; Jang, Kwang-Suk; Kim, Yun Ho

    2017-06-14

    We developed a facile method for treating polyimide-based organic gate insulator (OGI) surfaces with self-assembled monolayers (SAMs) by introducing metal-oxide interlayers, called the metal-oxide assisted SAM treatment (MAST). To create sites for surface modification with SAM materials on polyimide-based OGI (KPI) surfaces, the metal-oxide interlayer, here amorphous alumina (α-Al 2 O 3 ), was deposited on the KPI gate insulator using spin-coating via a rapid sol-gel reaction, providing an excellent template for the formation of a high-quality SAM with phosphonic acid anchor groups. The SAM of octadecylphosphonic acid (ODPA) was successfully treated by spin-coating onto the α-Al 2 O 3 -deposited KPI film. After the surface treatment by ODPA/α-Al 2 O 3 , the surface energy of the KPI thin film was remarkably decreased and the molecular compatibility of the film with an organic semiconductor (OSC), 2-decyl-7-phenyl-[1]benzothieno[3,2-b][1]benzothiophene (Ph-BTBT-C 10 ), was increased. Ph-BTBT-C 10 molecules were uniformly deposited on the treated gate insulator surface and grown with high crystallinity, as confirmed by atomic force microscopy (AFM) and X-ray diffraction (XRD) analysis. The mobility of Ph-BTBT-C 10 thin-film transistors (TFTs) was approximately doubled, from 0.56 ± 0.05 cm 2 V -1 s -1 to 1.26 ± 0.06 cm 2 V -1 s -1 , after the surface treatment. The surface treatment of α-Al 2 O 3 and ODPA significantly decreased the threshold voltage from -21.2 V to -8.3 V by reducing the trap sites in the OGI and improving the interfacial properties with the OSC. We suggest that the MAST method for OGIs can be applied to various OGI materials lacking reactive sites using SAMs. It may provide a new platform for the surface treatment of OGIs, similar to that of conventional SiO 2 gate insulators.

  20. Comprehensive study and design of scaled metal/high-k/Ge gate stacks with ultrathin aluminum oxide interlayers

    Energy Technology Data Exchange (ETDEWEB)

    Asahara, Ryohei; Hideshima, Iori; Oka, Hiroshi; Minoura, Yuya; Hosoi, Takuji, E-mail: hosoi@mls.eng.osaka-u.ac.jp; Shimura, Takayoshi; Watanabe, Heiji [Graduate School of Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871 (Japan); Ogawa, Shingo [Graduate School of Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871 (Japan); Toray Research Center Inc., 3-3-7 Sonoyama, Otsu, Shiga 520-8567 (Japan); Yoshigoe, Akitaka; Teraoka, Yuden [Japan Atomic Energy Agency, 1-1-1 Kouto, Sayo-cho, Sayo-gun, Hyogo 679-5148 (Japan)

    2015-06-08

    Advanced metal/high-k/Ge gate stacks with a sub-nm equivalent oxide thickness (EOT) and improved interface properties were demonstrated by controlling interface reactions using ultrathin aluminum oxide (AlO{sub x}) interlayers. A step-by-step in situ procedure by deposition of AlO{sub x} and hafnium oxide (HfO{sub x}) layers on Ge and subsequent plasma oxidation was conducted to fabricate Pt/HfO{sub 2}/AlO{sub x}/GeO{sub x}/Ge stacked structures. Comprehensive study by means of physical and electrical characterizations revealed distinct impacts of AlO{sub x} interlayers, plasma oxidation, and metal electrodes serving as capping layers on EOT scaling, improved interface quality, and thermal stability of the stacks. Aggressive EOT scaling down to 0.56 nm and very low interface state density of 2.4 × 10{sup 11 }cm{sup −2}eV{sup −1} with a sub-nm EOT and sufficient thermal stability were achieved by systematic process optimization.

  1. ICP dry etching ITO to improve the performance of GaN-based LEDs

    International Nuclear Information System (INIS)

    Meng Lili; Chen Yixin; Ma Li; Liu Zike; Shen Guangdi

    2011-01-01

    In order to improve the light efficiency of the conventional GaN-based light-emitting diodes (LEDs), the indium tin oxide (ITO) film is introduced as the current spreading layer and the light anti-reflecting layer on the p-GaN surface. There is a big problem with the ITO thin film's corrosion during the electrode preparation. In this paper, at least, the edge of the ITO film was lateral corroded 3.5 μm width, i.e. 6.43%-1/3 of ITO film's area. An optimized simple process, i.e. inductively couple plasma (ICP), was introduced to solve this problem. The ICP process not only prevented the ITO film from lateral corrosion, but also improved the LED's light intensity and device performance. The edge of the ITO film by ICP dry etching is steep, and the areas of ITO film are whole. Compared with the chip by wet etching, the areas of light emission increase by 6.43% at least and the chip's lop values increase by 45.9% at most. (semiconductor devices)

  2. Effects O2 plasma surface treatment on the electrical properties of the ITO substrate

    International Nuclear Information System (INIS)

    Hong, Jin-Woong; Oh, Dong-Hoon; Shim, Sang-Min; Lee, Young-Sang; Kang, Yong-Gil; Shin, Jong-Yeol

    2012-01-01

    The indium-tin-oxide (ITO) substrate is used as a transparent electrode in organic light-emitting diodes (OLEDs) and organic photovoltaic cells. The effect of an O 2 plasma surface treatment on the electrical properties of the ITO substrate was examined. The four-point probe method, an atomic force microscope (AFM), a LCR meter, a Cole-Cole plot, and a conductive mechanism analysis were used to assess the properties of the treated ITO substrates. The four-point probe method and the AFM study revealed a lower ITO surface resistance of 17.6 Ω/sq and an average roughness of 2 nm, respectively, for a substrate treated by a plasma at 250 W for 40 s. The lower surface resistance of the ITO substrate treated at 250 W for 40 s was confirmed by using a LCR meter. An amorphous fluoropolymer (AF) was deposited on an ITO substrate treated under the optimal conditions and on a non-plasma treated ITO substrate as well. The potential barriers for charge injection in these devices were 0.25 eV and 0.15 eV, respectively, indicating a 0.1-eV decrease due to the plasma treatment.

  3. Improving Performance of CIGS Solar Cells by Annealing ITO Thin Films Electrodes

    Directory of Open Access Journals (Sweden)

    Chuan Lung Chuang

    2015-01-01

    Full Text Available Indium tin oxide (ITO thin films were grown on glass substrates by direct current (DC reactive magnetron sputtering at room temperature. Annealing at the optimal temperature can considerably improve the composition, structure, optical properties, and electrical properties of the ITO film. An ITO sample with a favorable crystalline structure was obtained by annealing in fixed oxygen/argon ratio of 0.03 at 400°C for 30 min. The carrier concentration, mobility, resistivity, band gap, transmission in the visible-light region, and transmission in the near-IR regions of the ITO sample were -1.6E+20 cm−3, 2.7E+01 cm2/Vs, 1.4E-03 Ohm-cm, 3.2 eV, 89.1%, and 94.7%, respectively. Thus, annealing improved the average transmissions (400–1200 nm of the ITO film by 16.36%. Moreover, annealing a copper-indium-gallium-diselenide (CIGS solar cell at 400°C for 30 min in air improved its efficiency by 18.75%. The characteristics of annealing ITO films importantly affect the structural, morphological, electrical, and optical properties of ITO films that are used in solar cells.

  4. Influence of Continuous and Discontinuous Depositions on Properties of Ito Films Prepared by DC Magnetron Sputtering

    Science.gov (United States)

    Aiempanakit, K.; Rakkwamsuk, P.; Dumrongrattana, S.

    Indium tin oxide (ITO) films were deposited on glass substrate without external heating by DC magnetron sputtering with continuous deposition of 800 s (S1) and discontinuous depositions of 400 s × 2 times (S2), 200 s × 4 times (S3) and 100 s × 8 times (S4). The structural, surface morphology, optical transmittance and electrical resistivity of ITO films were measured by X-ray diffraction, atomic force microscope, spectrophotometer and four-point probe, respectively. The deposition process of the S1 condition shows the highest target voltage due to more target poisoning occurrence. The substrate temperature of the S1 condition increases with the saturation curve of the RC charging circuit while other conditions increase and decrease due to deposition steps as DC power turns on and off. Target voltage and substrate temperature of ITO films decrease when changing the deposition conditions from S1 to S2, S3 and S4, respectively. The preferential orientation of ITO films were changed from dominate (222) plane to (400) plane with the increasing number of deposition steps. The ITO film for the S4 condition shows the lowest electrical resistivity of 1.44 × 10-3 Ω·cm with the highest energy gap of 4.09 eV and the highest surface roughness of 3.43 nm. These results were discussed from the point of different oxygen occurring on the surface ITO target between the sputtering processes which affected the properties of ITO films.

  5. Characteristics of ITO films with oxygen plasma treatment for thin film solar cell applications

    Energy Technology Data Exchange (ETDEWEB)

    Park, Yong Seob [Department of Photoelectronics Information, Chosun College of Science and Technology, Gwangju (Korea, Republic of); Kim, Eungkwon [Digital Broadcasting Examination, Korean Intellectual Property Office, Daejeon, Suwon 440-746 (Korea, Republic of); Hong, Byungyou [School of Electronic and Electrical Engineering, Sungkyunkwan University, Cheoncheon-dong, 300, Jangan-gu, Suwon 440-746 (Korea, Republic of); Lee, Jaehyoeng, E-mail: jaehyeong@skku.edu [School of Electronic and Electrical Engineering, Sungkyunkwan University, Cheoncheon-dong, 300, Jangan-gu, Suwon 440-746 (Korea, Republic of)

    2013-12-15

    Graphical abstract: The effect of O{sub 2} plasma treatment on the surface and the work function of ITO films. - Highlights: • ITO films were prepared on the glass substrate by RF magnetron sputtering method. • Effects of O{sub 2} plasma treatment on the properties of ITO films were investigated. • The work function of ITO film was changed from 4.67 to 5.66 eV by plasma treatment. - Abstract: The influence of oxygen plasma treatment on the electro-optical and structural properties of indium-tin-oxide films deposited by radio frequency magnetron sputtering method were investigated. The films were exposed at different O{sub 2} plasma powers and for various durations by using the plasma enhanced chemical vapor deposition (PECVD) system. The resistivity of the ITO films was almost constant, regardless of the plasma treatment conditions. Although the optical transmittance of ITO films was little changed by the plasma power, the prolonged treatment slightly increased the transmittance. The work function of ITO film was changed from 4.67 eV to 5.66 eV at the plasma treatment conditions of 300 W and 60 min.

  6. Characterization of dip-coated ITO films derived from nanoparticles synthesized by low-pressure spray pyrolysis

    International Nuclear Information System (INIS)

    Ogi, Takashi; Iskandar, Ferry; Itoh, Yoshifumi; Okuyama, Kikuo

    2006-01-01

    In 2 O 3 :Sn (Indium Tin Oxide; ITO) films were prepared from a sol solution with highly crystalline ITO nanoparticles (less than 20 nm in size with 10 at.% Sn) which had been prepared by low-pressure spray pyrolysis (LPSP) in a single step. The ITO sol solution was prepared by dispersing LPSP-prepared ITO nanoparticles into ultra pure water. The nanoparticle ITO film was deposited on a glass substrate using a dip-coating method and then annealed in air at various temperatures. The optical transmittances of the ITO films were measured by UV-Vis spectrometry, and the films were found to have a high transparency to visible light (in the case of a film thickness of 250 nm annealed at 400 deg. C, the transparency was in excess of 95% over the range λ=450-800 nm, with a maximum value near 100% at wavelengths above λ=700 nm). The optical transmittances of the films were influenced by the size of the ITO particle used, the film thickness and the annealing temperature. The ITO films showed a minimum resistivity of 9.5x10 -2 Ω cm, and their resistivity was affected by both the ITO particle size and the annealing temperature used

  7. Synaptic behaviors of thin-film transistor with a Pt/HfO x /n-type indium–gallium–zinc oxide gate stack

    Science.gov (United States)

    Yang, Paul; Park, Daehoon; Beom, Keonwon; Kim, Hyung Jun; Kang, Chi Jung; Yoon, Tae-Sik

    2018-07-01

    We report a variety of synaptic behaviors in a thin-film transistor (TFT) with a metal-oxide-semiconductor gate stack that has a Pt/HfO x /n-type indium–gallium–zinc oxide (n-IGZO) structure. The three-terminal synaptic TFT exhibits a tunable synaptic weight with a drain current modulation upon repeated application of gate and drain voltages. The synaptic weight modulation is analog, voltage-polarity dependent reversible, and strong with a dynamic range of multiple orders of magnitude (>104). This modulation process emulates biological synaptic potentiation, depression, excitatory-postsynaptic current, paired-pulse facilitation, and short-term to long-term memory transition behaviors as a result of repeated pulsing with respect to the pulse amplitude, width, repetition number, and the interval between pulses. These synaptic behaviors are interpreted based on the changes in the capacitance of the Pt/HfO x /n-IGZO gate stack, the channel mobility, and the threshold voltage that result from the redistribution of oxygen ions by the applied gate voltage. These results demonstrate the potential of this structure for three-terminal synaptic transistor using the gate stack composed of the HfO x gate insulator and the IGZO channel layer.

  8. Synaptic behaviors of thin-film transistor with a Pt/HfO x /n-type indium-gallium-zinc oxide gate stack.

    Science.gov (United States)

    Yang, Paul; Park, Daehoon; Beom, Keonwon; Kim, Hyung Jun; Kang, Chi Jung; Yoon, Tae-Sik

    2018-07-20

    We report a variety of synaptic behaviors in a thin-film transistor (TFT) with a metal-oxide-semiconductor gate stack that has a Pt/HfO x /n-type indium-gallium-zinc oxide (n-IGZO) structure. The three-terminal synaptic TFT exhibits a tunable synaptic weight with a drain current modulation upon repeated application of gate and drain voltages. The synaptic weight modulation is analog, voltage-polarity dependent reversible, and strong with a dynamic range of multiple orders of magnitude (>10 4 ). This modulation process emulates biological synaptic potentiation, depression, excitatory-postsynaptic current, paired-pulse facilitation, and short-term to long-term memory transition behaviors as a result of repeated pulsing with respect to the pulse amplitude, width, repetition number, and the interval between pulses. These synaptic behaviors are interpreted based on the changes in the capacitance of the Pt/HfO x /n-IGZO gate stack, the channel mobility, and the threshold voltage that result from the redistribution of oxygen ions by the applied gate voltage. These results demonstrate the potential of this structure for three-terminal synaptic transistor using the gate stack composed of the HfO x gate insulator and the IGZO channel layer.

  9. Field Emission of ITO-Coated Vertically Aligned Nanowire Array.

    KAUST Repository

    Lee, Changhwa

    2010-04-29

    An indium tin oxide (ITO)-coated vertically aligned nanowire array is fabricated, and the field emission characteristics of the nanowire array are investigated. An array of vertically aligned nanowires is considered an ideal structure for a field emitter because of its parallel orientation to the applied electric field. In this letter, a vertically aligned nanowire array is fabricated by modified conventional UV lithography and coated with 0.1-μm-thick ITO. The turn-on electric field intensity is about 2.0 V/μm, and the field enhancement factor, β, is approximately 3,078 when the gap for field emission is 0.6 μm, as measured with a nanomanipulator in a scanning electron microscope.

  10. Field Emission of ITO-Coated Vertically Aligned Nanowire Array.

    KAUST Repository

    Lee, Changhwa; Lee, Seokwoo; Lee, Seung S

    2010-01-01

    An indium tin oxide (ITO)-coated vertically aligned nanowire array is fabricated, and the field emission characteristics of the nanowire array are investigated. An array of vertically aligned nanowires is considered an ideal structure for a field emitter because of its parallel orientation to the applied electric field. In this letter, a vertically aligned nanowire array is fabricated by modified conventional UV lithography and coated with 0.1-μm-thick ITO. The turn-on electric field intensity is about 2.0 V/μm, and the field enhancement factor, β, is approximately 3,078 when the gap for field emission is 0.6 μm, as measured with a nanomanipulator in a scanning electron microscope.

  11. ITO thin films prepared by a microwave heating

    International Nuclear Information System (INIS)

    Okuya, Masayuki; Ito, Nobuyuki; Shiozaki, Katsuyuki

    2007-01-01

    ITO thin films were prepared by irradiating 2.45 GHz of microwave with an output power of 700 W using a commercial kitchen microwave oven. A substrate temperature went up and down rapidly between 100 and 650 deg. C in a minute by a dielectric loss of SnO 2 layer pre-deposited on a glass substrate. We found that the electrical and optical properties of films were affected by the atmosphere in a microwave irradiation, while the sintering was completed within a few minutes. Although the electrical resistivity was not reduced below 5.0 x 10 -4 Ω.cm in this study, the results lead to the possibility of a practical rapid synthesis of ITO transparent conducting oxide films

  12. Technique for forming ITO films with a controlled refractive index

    Energy Technology Data Exchange (ETDEWEB)

    Markov, L. K., E-mail: l.markov@mail.ioffe.ru; Smirnova, I. P.; Pavluchenko, A. S.; Kukushkin, M. V.; Zakheim, D. A.; Pavlov, S. I. [Russian Academy of Sciences, Ioffe Physical–Technical Institute (Russian Federation)

    2016-07-15

    A new method for fabricating transparent conducting coatings based on indium-tin oxide (ITO) with a controlled refractive index is proposed. This method implies the successive deposition of material by electron-beam evaporation and magnetron sputtering. Sputtered coatings with different densities (and, correspondingly, different refractive indices) can be obtained by varying the ratio of the mass fractions of material deposited by different methods. As an example, films with effective refractive indices of 1.2, 1.4, and 1.7 in the wavelength range of 440–460 nm are fabricated. Two-layer ITO coatings with controlled refractive indices of the layers are also formed by the proposed method. Thus, multilayer transparent conducting coatings with desired optical parameters can be produced.

  13. Preparation and Thermoelectric Characteristics of ITO/PtRh:PtRh Thin Film Thermocouple.

    Science.gov (United States)

    Zhao, Xiaohui; Wang, Hongmin; Zhao, Zixiang; Zhang, Wanli; Jiang, Hongchuan

    2017-12-15

    Thin film thermocouples (TFTCs) can provide more precise in situ temperature measurement for aerospace propulsion systems without disturbance of gas flow and surface temperature distribution of the hot components. ITO/PtRh:PtRh TFTC with multilayer structure was deposited on alumina ceramic substrate by magnetron sputtering. After annealing, the TFTC was statically calibrated for multiple cycles with temperature up to 1000 °C. The TFTC with excellent stability and repeatability was realized for the negligible variation of EMF in different calibration cycles. It is believed that owing to oxygen diffusion barriers by the oxidation of top PtRh layer and Schottky barriers formed at the grain boundaries of ITO, the variation of the carrier concentration of ITO film is minimized. Meanwhile, the life time of TFTC is more than 30 h in harsh environment. This makes ITO/PtRh:PtRh TFTC a promising candidate for precise surface temperature measurement of hot components of aeroengines.

  14. Structural, optical and electrical characteristics of ITO thin films deposited by sputtering on different polyester substrates

    International Nuclear Information System (INIS)

    Guillen, C.; Herrero, J.

    2008-01-01

    Indium tin oxide (ITO) thin films were deposited by sputtering at room temperature on glass and different polyester substrates; namely polyarylate (PA), polycarbonate (PC) and polyethylene terephtalate (PET). The influence of the substrate on the structural, optical and electrical characteristics of the ITO layers was investigated. The sputtered films exhibited crystallization in the (2 2 2) orientation, with higher mean crystallite size and lower structural distortion onto PET than onto PA, PC or glass substrates. ITO films deposited onto PET showed also higher band gap energy, higher carrier concentration and lower resistivity than the ITO layers onto the other tested substrates. These optical and electrical characteristics have been related to the structural distortion that was found dependent on the specific polyester substrate

  15. Electrical properties of transparent CNT and ITO coatings on PET substrate including nano-structural aspects

    Science.gov (United States)

    Park, Joung-Man; Wang, Zuo-Jia; Kwon, Dong-Jun; Gu, Ga-Young; Lawrence DeVries, K.

    2013-01-01

    Ultraviolet (UV)-visible spectra and surface resistance measurement were used to investigate optical transmittance and conductive properties of carbon nanotube (CNT) and indium tin oxide (ITO) coated polyethylene terephthalate (PET) substrates. Conductive CNT and ITO coatings were successfully fabricated on PET by a spray-coating method. Thin coatings of both materials exhibited good conductivity and transparency. Changes in electrical and optical properties of the coatings were studied as a function of the coating suspension concentration. Interfacial durability of the coatings on PET substrates was also investigated under fatigue and bending loads. CNT coated substrates, with high aspect ratios, exhibited no detectable change in surface resistance up to 2000 cyclic loadings, whereas the ITO coated substrates exhibited a substantial increase in surface resistance at 1000 loading cycles. This change in resistance is attributed to a reduction in the number and effectiveness of the electrical contact points due to the inherent brittle nature of ITO.

  16. Patterning of nanoparticulate transparent conductive ITO films using UV light irradiation and UV laser beam writing

    International Nuclear Information System (INIS)

    Solieman, A.; Moharram, A.H.; Aegerter, M.A.

    2010-01-01

    Indium tin oxide (ITO) thin film is one of the most widely used as transparent conductive electrodes in all forms of flat panel display (FPD) and microelectronic devices. Suspension of already crystalline conductive ITO nanoparticles fully dispersed in alcohol was spun, after modifying with coupling agent, on glass substrates. The low cost, simple and versatile traditional photolithography process without complication of the photoresist layer was used for patterning ITO films. Using of UV light irradiation through mask and direct UV laser beam writing resulted in an accurate linear, sharp edge and very smooth patterns. Irradiated ITO film showed a high transparency (∼85%) in the visible region. The electrical sheet resistance decrease with increasing time of exposure to UV light and UV laser. Only 5 min UV light irradiation is enough to decrease the electrical sheet resistance down to 5 kΩ□.

  17. Understanding the mechanisms that change the conductivity of damaged ITO-coated polymeric films: A micro-mechanical investigation

    KAUST Repository

    Nasr Saleh, Mohamed; Lubineau, Gilles

    2014-01-01

    Degradation from mechanical loading of transparent electrodes made of indium tin oxide (ITO) endangers the integrity of any material based on these electrodes, including flexible organic solar cells. However, how different schemes of degradation

  18. Investigation of Rapid Low-Power Microwave-Induction Heating Scheme on the Cross-Linking Process of the Poly(4-vinylphenol) for the Gate Insulator of Pentacene-Based Thin-Film Transistors

    Science.gov (United States)

    Fan, Ching-Lin; Shang, Ming-Chi; Wang, Shea-Jue; Hsia, Mao-Yuan; Lee, Win-Der; Huang, Bohr-Ran

    2017-01-01

    In this study, a proposed Microwave-Induction Heating (MIH) scheme has been systematically studied to acquire suitable MIH parameters including chamber pressure, microwave power and heating time. The proposed MIH means that the thin indium tin oxide (ITO) metal below the Poly(4-vinylphenol) (PVP) film is heated rapidly by microwave irradiation and the heated ITO metal gate can heat the PVP gate insulator, resulting in PVP cross-linking. It is found that the attenuation of the microwave energy decreases with the decreasing chamber pressure. The optimal conditions are a power of 50 W, a heating time of 5 min, and a chamber pressure of 20 mTorr. When suitable MIH parameters were used, the effect of PVP cross-linking and the device performance were similar to those obtained using traditional oven heating, even though the cross-linking time was significantly decreased from 1 h to 5 min. Besides the gate leakage current, the interface trap state density (Nit) was also calculated to describe the interface status between the gate insulator and the active layer. The lowest interface trap state density can be found in the device with the PVP gate insulator cross-linked by using the optimal MIH condition. Therefore, it is believed that the MIH scheme is a good candidate to cross-link the PVP gate insulator for organic thin-film transistor applications as a result of its features of rapid heating (5 min) and low-power microwave-irradiation (50 W). PMID:28773101

  19. Investigation of Rapid Low-Power Microwave-Induction Heating Scheme on the Cross-Linking Process of the Poly(4-vinylphenol for the Gate Insulator of Pentacene-Based Thin-Film Transistors

    Directory of Open Access Journals (Sweden)

    Ching-Lin Fan

    2017-07-01

    Full Text Available In this study, a proposed Microwave-Induction Heating (MIH scheme has been systematically studied to acquire suitable MIH parameters including chamber pressure, microwave power and heating time. The proposed MIH means that the thin indium tin oxide (ITO metal below the Poly(4-vinylphenol (PVP film is heated rapidly by microwave irradiation and the heated ITO metal gate can heat the PVP gate insulator, resulting in PVP cross-linking. It is found that the attenuation of the microwave energy decreases with the decreasing chamber pressure. The optimal conditions are a power of 50 W, a heating time of 5 min, and a chamber pressure of 20 mTorr. When suitable MIH parameters were used, the effect of PVP cross-linking and the device performance were similar to those obtained using traditional oven heating, even though the cross-linking time was significantly decreased from 1 h to 5 min. Besides the gate leakage current, the interface trap state density (Nit was also calculated to describe the interface status between the gate insulator and the active layer. The lowest interface trap state density can be found in the device with the PVP gate insulator cross-linked by using the optimal MIH condition. Therefore, it is believed that the MIH scheme is a good candidate to cross-link the PVP gate insulator for organic thin-film transistor applications as a result of its features of rapid heating (5 min and low-power microwave-irradiation (50 W.

  20. Improvement in gate bias stress instability of amorphous indium-gallium-zinc oxide thin-film transistors using microwave irradiation

    Energy Technology Data Exchange (ETDEWEB)

    Jo, Kwang-Won; Cho, Won-Ju, E-mail: chowj@kw.ac.kr [Department of Electronic Materials Engineering, Kwangwoon University, 447-1, Wolgye-dong, Nowon-gu, Seoul 139-701 (Korea, Republic of)

    2014-11-24

    In this study, we evaluated the effects of microwave irradiation (MWI) post-deposition-annealing (PDA) treatment on the gate bias stress instability of amorphous indium-gallium-zinc oxide thin-film transistors (a-IGZO TFTs) and compared the results with a conventional thermal annealing PDA treatment. The MWI-PDA-treated a-IGZO TFTs exhibited enhanced electrical performance as well as improved long-term stability with increasing microwave power. The positive turn-on voltage shift (ΔV{sub ON}) as a function of stress time with positive bias and varying temperature was precisely modeled on a stretched-exponential equation, suggesting that charge trapping is a dominant mechanism in the instability of MWI-PDA-treated a-IGZO TFTs. The characteristic trapping time and average effective barrier height for electron transport indicate that the MWI-PDA treatment effectively reduces the defects in a-IGZO TFTs, resulting in a superior resistance against gate bias stress.

  1. pH sensing characteristics and biosensing application of solution-gated reduced graphene oxide field-effect transistors.

    Science.gov (United States)

    Sohn, Il-Yung; Kim, Duck-Jin; Jung, Jin-Heak; Yoon, Ok Ja; Thanh, Tien Nguyen; Quang, Trung Tran; Lee, Nae-Eung

    2013-07-15

    Solution-gated reduced graphene oxide field-effect transistors (R-GO FETs) were investigated for pH sensing and biochemical sensing applications. A channel of a networked R-GO film formed by self-assembly was incorporated as a sensing layer into a solution-gated FET structure for pH sensing and the detection of acetylcholine (Ach), which is a neurotransmitter in the nerve system, through enzymatic reactions. The fabricated R-GO FET was sensitive to protons (H(+)) with a pH sensitivity of 29 mV/pH in terms of the shift of the charge neutrality point (CNP), which is attributed to changes in the surface potential caused by the interaction of protons with OH surface functional groups present on the R-GO surface. The R-GO FET immobilized with acetylcholinesterase (AchE) was used to detect Ach in the concentration range of 0.1-10mM by sensing protons generated during the enzymatic reactions. The results indicate that R-GO FETs provide the capability to detect protons, demonstrating their applicability as a biosensing device for enzymatic reactions. Copyright © 2013 Elsevier B.V. All rights reserved.

  2. Pseudo 2-transistor active pixel sensor using an n-well/gate-tied p-channel metal oxide semiconductor field eeffect transistor-type photodetector with built-in transfer gate

    Science.gov (United States)

    Seo, Sang-Ho; Seo, Min-Woong; Kong, Jae-Sung; Shin, Jang-Kyoo; Choi, Pyung

    2008-11-01

    In this paper, a pseudo 2-transistor active pixel sensor (APS) has been designed and fabricated by using an n-well/gate-tied p-channel metal oxide semiconductor field effect transistor (PMOSFET)-type photodetector with built-in transfer gate. The proposed sensor has been fabricated using a 0.35 μm 2-poly 4-metal standard complementary metal oxide semiconductor (CMOS) logic process. The pseudo 2-transistor APS consists of two NMOSFETs and one photodetector which can amplify the generated photocurrent. The area of the pseudo 2-transistor APS is 7.1 × 6.2 μm2. The sensitivity of the proposed pixel is 49 lux/(V·s). By using this pixel, a smaller pixel area and a higher level of sensitivity can be realized when compared with a conventional 3-transistor APS which uses a pn junction photodiode.

  3. Potential of ITO nanoparticles formed by hydrogen treatment in PECVD for improved performance of back grid contact crystalline silicon solar cell

    Energy Technology Data Exchange (ETDEWEB)

    Mandal, Sourav; Mitra, Suchismita; Dhar, Sukanta; Ghosh, Hemanta; Banerjee, Chandan, E-mail: chandanbanerjee74@gmail.com; Datta, Swapan K.; Saha, Hiranmoy

    2015-09-15

    Highlights: • Indium tin oxide (ITO) nanoparticles as back scatterers in c-Si solar cells. • ITO NP have comparatively low dissipative losses and tunable optical properties. • ITO NP formed by hydrogen plasma treatment on sputtered ITO film. • Enhanced absorption and carrier collection at longer wavelengths due to enhanced light trapping. - Abstract: This paper discusses the prospect of using indium tin oxide (ITO) nanoparticles as back scatterers in crystalline silicon solar cells instead of commonly used metal nanoparticles as ITO nanoparticles have comparatively low dissipative losses and tunable optical properties. ITO nanoparticles of ∼5–10 nm size is developed on the rear side of the solar cell by deposition of ∼5–10 nm thick ITO layer by DC magnetron sputtering followed by hydrogen treatment in PECVD. The silicon solar cell is fabricated in the laboratory using conventional method with grid metal contact at the back surface. Various characterizations like FESEM, TEM, AFM, XRD, EQE and IV characteristics are performed to analyze the morphology, chemical composition, optical characteristics and electrical performance of the device. ITO nanoparticles at the back surface of the solar cell significantly enhances the short circuit current, open circuit voltage and efficiency of the solar cell. These enhancements may be attributed to the increased absorption and carrier collection at longer wavelengths of solar spectrum due to enhanced light trapping by the ITO nanoparticles and surface passivation by the hydrogen treatment of the back surface.

  4. Electro-synthesis, characterization and photoconducting performance of ITO/polybithiophene–MnO{sub 2} composite

    Energy Technology Data Exchange (ETDEWEB)

    Zouaoui, H.; Abdi, D. [Laboratoire d’Energétique et d’Electrochimie du Solide, Université Ferhat Abbas Sétif-1, Sétif 19000 (Algeria); Bahloul, A.; Nessark, B. [Laboratoire d’Electrochimie et Matériaux, Université Ferhat Abbas Sétif-1, Sétif 19000 (Algeria); Briot, E.; Groult, H. [Sorbonne Universités, Université Paris 6 (UPMC), Physicochimie des Electrolytes et Nanosystèmes Interfaciaux (PHENIX), 4 place Jussieu, 75252 Paris Cedex 05 (France); Mauger, A. [Sorbonne Universités, Université Paris 6 (UPMC), Institut de Minéralogie et de Physique des Milieux Condensés (IMPMC), 4 place Jussieu, 75252 Paris Cedex 05 (France); Julien, C.M., E-mail: christian.julien@upmc.fr [Sorbonne Universités, Université Paris 6 (UPMC), Physicochimie des Electrolytes et Nanosystèmes Interfaciaux (PHENIX), 4 place Jussieu, 75252 Paris Cedex 05 (France)

    2016-06-15

    Highlights: • PBTh–MnO{sub 2} composites are prepared by electro-polymerization of bithiophene on ITO. • Photocurrent of ITO/PBTh–MnO{sub 2} films is three times higher than that of ITO/PBTh substrate. • Electrochemical gap, HOMO and LUMO potentials are determined. • ITO/PBTh–MnO{sub 2} films can be used as a new active material in solar cells. - Abstract: Manganese dioxide is synthesized by reduction reaction of potassium permanganate with hydrogen peroxide. The as-synthesized α-MnO{sub 2} is characterized by powder X-ray diffraction and infrared spectroscopy. The MnO{sub 2} particles are used to prepare composite films containing polybithophene (PBTh) on indium tin oxide (ITO) glass substrates. The composite films ITO/PBTh–MnO{sub 2} are obtained by electro-polymerization of bithiophene in the presence the α-MnO{sub 2} particles dispersed in the electrolytic solution. The XRD and SEM analyses show that the α-MnO{sub 2} particles of size in the range 100–300 nm are incorporated in the polymer. The films are characterized by cyclic voltammetry impedance spectroscopy, UV–vis spectroscopy and scanning electron microscopy. As a result, the electrochemical gap and the optical gap are shifted by the incorporation of MnO{sub 2} from 2.15 eV for ITO/PBTh to 1.88 eV for ITO/PBTh–MnO{sub 2}, while the electrical conductivity decreases from 195.35 S/cm for ITO/PBTh down to 0.047 S/cm for ITO/PBTh–MnO{sub 2} at the highest MnO{sub 2} investigated. The photo-electrochemical measurements also indicate that the ITO/PBTh–MnO{sub 2} films show a photocurrent that is three times higher than that of ITO/PBTh substrate to reach 20.6 μA cm{sup −2}, so that such a composite can be used as a new active material in solar cells.

  5. Lateral protonic/electronic hybrid oxide thin-film transistor gated by SiO2 nanogranular films

    International Nuclear Information System (INIS)

    Zhu, Li Qiang; Chao, Jin Yu; Xiao, Hui

    2014-01-01

    Ionic/electronic interaction offers an additional dimension in the recent advancements of condensed materials. Here, lateral gate control of conductivities of indium-zinc-oxide (IZO) films is reported. An electric-double-layer (EDL) transistor configuration was utilized with a phosphorous-doped SiO 2 nanogranular film to provide a strong lateral electric field. Due to the strong lateral protonic/electronic interfacial coupling effect, the IZO EDL transistor could operate at a low-voltage of 1 V. A resistor-loaded inverter is built, showing a high voltage gain of ∼8 at a low supply voltage of 1 V. The lateral ionic/electronic coupling effects are interesting for bioelectronics and portable electronics

  6. Lateral protonic/electronic hybrid oxide thin-film transistor gated by SiO{sub 2} nanogranular films

    Energy Technology Data Exchange (ETDEWEB)

    Zhu, Li Qiang, E-mail: lqzhu@nimte.ac.cn; Chao, Jin Yu; Xiao, Hui [Ningbo Institute of Material Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201 (China)

    2014-12-15

    Ionic/electronic interaction offers an additional dimension in the recent advancements of condensed materials. Here, lateral gate control of conductivities of indium-zinc-oxide (IZO) films is reported. An electric-double-layer (EDL) transistor configuration was utilized with a phosphorous-doped SiO{sub 2} nanogranular film to provide a strong lateral electric field. Due to the strong lateral protonic/electronic interfacial coupling effect, the IZO EDL transistor could operate at a low-voltage of 1 V. A resistor-loaded inverter is built, showing a high voltage gain of ∼8 at a low supply voltage of 1 V. The lateral ionic/electronic coupling effects are interesting for bioelectronics and portable electronics.

  7. Electrical analysis of high dielectric constant insulator and metal gate metal oxide semiconductor capacitors on flexible bulk mono-crystalline silicon

    KAUST Repository

    Ghoneim, Mohamed T.; Rojas, Jhonathan Prieto; Young, Chadwin D.; Bersuker, Gennadi; Hussain, Muhammad Mustafa

    2015-01-01

    We report on the electrical study of high dielectric constant insulator and metal gate metal oxide semiconductor capacitors (MOSCAPs) on a flexible ultra-thin (25 μm) silicon fabric which is peeled off using a CMOS compatible process from a standard

  8. Life cycle assessment of ITO-free flexible polymer solar cells prepared by roll-to-roll coating and printing

    DEFF Research Database (Denmark)

    Espinosa Martinez, Nieves; García-Valverde, Rafael; Urbina, Antonio

    2012-01-01

    Indium is a scarce and expensive material that has been identified as a bottleneck for future organic electronics deployment in large scale. Indium is the main constituent of Indium Tin Oxide (ITO), which is the most successful transparent electrode in organic photovoltaics (OPV) so far. A new...... process, termed Hiflex, allows for manufacture of flexible OPV modules where the ITO electrode has been replaced by a sputtered Al/Cr electrode in an inverted device architecture with front illumination. This work presents a life cycle assessment of the Hiflex process, in order to compare...... the environmental impact of avoiding ITO as electrode. The new ITO-free process reduces some of the processing steps, leading to important reductions of the energy input during OPV module manufacturing in comparison to ITO-based modules. The environmental analysis reveals an Energy Pay-Back time (EPBT) of 10 years...

  9. Investigation of the influence of growth parameters on self-catalyzed ITO nanowires by high RF-power sputtering

    Science.gov (United States)

    Li, Qiang; Zhang, Yuantao; Feng, Lungang; Wang, Zuming; Wang, Tao; Yun, Feng

    2018-04-01

    Tin-doped indium oxide (ITO) nanowires are successfully fabricated using a radio frequency (RF) sputtering technique with a high RF power of 250 W. The fabrication of the ITO nanowires is optimized through the study of oxygen flow rates, temperatures and RF power. The difference in the morphology of the ITO nanowires prepared by using a new target and a used target is observed and the mechanism for the difference is discussed in detail. A hollow structure and air voids within the nanowires are formed during the process of the nanowire growth. The ITO nanowires fabricated by this method demonstrated good conductivity (15 Ω sq-1) and a transmittance of more than 64% at a wavelength longer than 550 nm after annealing. Furthermore, detailed microstructure studies show that the ITO nanowires exhibit a large number of oxygen vacancies. As a result, it is expected that they can be useful for the fabrication of gas sensor devices.

  10. KChIP2 genotype dependence of transient outward current (Ito) properties in cardiomyocytes isolated from male and female mice.

    Science.gov (United States)

    Waldschmidt, Lara; Junkereit, Vera; Bähring, Robert

    2017-01-01

    The transient outward current (Ito) in cardiomyocytes is largely mediated by Kv4 channels associated with Kv Channel Interacting Protein 2 (KChIP2). A knockout model has documented the critical role of KChIP2 in Ito expression. The present study was conducted to characterize in both sexes the dependence of Ito properties, including current magnitude, inactivation kinetics, recovery from inactivation and voltage dependence of inactivation, on the number of functional KChIP2 alleles. For this purpose we performed whole-cell patch-clamp experiments on isolated left ventricular cardiomyocytes from male and female mice which had different KChIP2 genotypes; i.e., wild-type (KChIP2+/+), heterozygous knockout (KChIP2+/-) or complete knockout of KChIP2 (KChIP2-/-). We found in both sexes a KChIP2 gene dosage effect (i.e., a proportionality between number of alleles and phenotype) on Ito magnitude, however, concerning other Ito properties, KChIP2+/- resembled KChIP2+/+. Only in the total absence of KChIP2 (KChIP2-/-) we observed a slowing of Ito kinetics, a slowing of recovery from inactivation and a negative shift of a portion of the voltage dependence of inactivation. In a minor fraction of KChIP2-/- myocytes Ito was completely lost. The distinct KChIP2 genotype dependences of Ito magnitude and inactivation kinetics, respectively, seen in cardiomyocytes were reproduced with two-electrode voltage-clamp experiments on Xenopus oocytes expressing Kv4.2 and different amounts of KChIP2. Our results corroborate the critical role of KChIP2 in controlling Ito properties. They demonstrate that the Kv4.2/KChIP2 interaction in cardiomyocytes is highly dynamic, with a clear KChIP2 gene dosage effect on Kv4 channel surface expression but not on inactivation gating.

  11. Organic light emitting diodes on ITO-free polymer anodes

    Energy Technology Data Exchange (ETDEWEB)

    Fehse, Karsten; Schwartz, Gregor; Walzer, Karsten; Leo, Karl [Institut fuer Angewandte Photophysik, TU Dresden, D-01062 Dresden (Germany)

    2007-07-01

    The high material cost of indium, being the main component of the commonly used indium-tin-oxide anodes (ITO) in organic light emitting diodes (OLEDs), is an obstacle for the production of efficient low-cost OLEDs. Therefore, new anode materials are needed for large scale OLED production. Recently, we demonstrated that the polymer PEDOT:PSS can substitute ITO as anode. Another highly conductive polymer is polyaniline (PANI) that provides 200 S/cm with a work function of 4.8 eV. In this study, we use PANI as anode for OLEDs (without ITO layer underneath the polymer) with electrically doped hole- and electron transport layers and intrinsic materials in between. Fluorescent blue (Spiro-DPVBi) as well as phosphorescent green (Ir(ppy){sub 3}) and red emitters (Ir(MDQ){sub 2}(acac)) were used for single colour and white OLEDs. Green single and double emission OLEDs achieve device efficiencies of 34 lm/W and 40.7 lm/W, respectively. The white OLED shows a power efficiency of 8.9 lm/W at 1000 cd/m{sup 2} with CIE coordinates of (0.42/0.39).

  12. Structural and optical properties of ITO and Cu doped ITO thin films

    Science.gov (United States)

    Chakraborty, Deepannita; Kaleemulla, S.; Rao, N. Madhusudhana; Subbaravamma, K.; Rao, G. Venugopal

    2018-04-01

    (In0.95Sn0.05)2O3 and (In0.90Cu0.05Sn0.05)2O3 thin films were coated onto glass substrate by electron beam evaporation technique. The structural and optical properties of ITO and Cu doped ITO thin films have been studied by X-ray diffractometer (XRD) and UV-Vis-NIR spectrophotometer. The crystallite size obtained for ITO and Cu doped ITO thin films was in the range of 24 nm to 22 nm. The optical band gap of 4 eV for ITO thin film sample has been observed. The optical band gap decreases to 3.85 eV by doping Cu in ITO.

  13. Chemical mechanical polishing characteristics of ITO thin film prepared by RF magnetron sputtering

    International Nuclear Information System (INIS)

    Lee, Kang-Yeon; Choi, Gwon-Woo; Kim, Yong-Jae; Choi, Youn-Ok; Kim, Nam-Oh

    2012-01-01

    Indium-tin-oxide (ITO) thin films have attracted intensive interest because of their unique properties of good conductivity, high optical transmittance over the visible region and easy patterning ability. ITO thin films have found many applications in anti-static coatings, thermal heaters, solar cells, flat panel displays (FPDs), liquid crystal displays (LCDs), electroluminescent devices, sensors and organic light-emitting diodes (OLEDs). ITO thin films are generally fabricated by using various methods, such as spraying, chemical vapor deposition (CVD), evaporation, electron gun deposition, direct current electroplating, high frequency sputtering, and reactive sputtering. In this research, ITO films were grown on glass substrates by using a radio-frequency (RF) magnetron sputtering method. In order to achieve a high transmittance and a low resistivity, we examined the various film deposition conditions, such as substrate temperature, working pressure, annealing temperature, and deposition time. Next, in order to improve the surface quality of the ITO thin films, we performed a chemical mechanical polishing (CMP) with different process parameters and compared the electrical and the optical properties of the polished ITO thin films. The best CMP conditions with a high removal rate, low nonuniformity, low resistivity and high transmittance were as follows: platen speed, head speed, polishing time, and slurry flow rate of 30 rpm, 30 rpm, 60 sec, and 60 ml/min, respectively.

  14. Optical and electrical characterization of r.f. sputtered ITO films developed as art protection coatings

    International Nuclear Information System (INIS)

    Boycheva, Sylvia; Sytchkova, Anna Krasilnikova; Piegari, Angela

    2007-01-01

    Transparent and conductive tin-doped indium oxide (ITO) films have been prepared by r.f. plasma sputtering technique in Ar and Ar + O 2 gas mixture. The influence of the deposition conditions, film thickness, and substrate heating, as well as the post-annealing treatment on the optical and electrical properties of the ITO films has been investigated. The present study has extended the optical behaviour characterization of the ITO films in a wide UV-VIS-IR spectral region in addition to the comprehensive optical studies of this material at shorter wavelengths. The optical constants: refractive index (n), extinction (k) and absorption (α) coefficient, and the optical band gap (E go ) have been calculated for the ITO films in the spectral range between 350 and 2500 nm. A combination of several well-known theoretical models has been applied to describe precisely the complex optical behaviour of ITO films in separate spectral parts. In this approach, a good overlapping between the experimental and the simulated spectra in the whole investigated spectral region has been achieved. The deposition conditions and the optical and electrical properties of the ITO films have been optimized with respect to the requirements for their applications in art protection coatings

  15. Effect of modified ITO substrate on electrochromic properties of polyaniline films

    Energy Technology Data Exchange (ETDEWEB)

    Leon-Silva, U.; Nicho, M.E.; Cruz-Silva, Rodolfo [Centro de Investigacion en Ingenieria y Ciencias Aplicadas, UAEMor, Av. Universidad 1001, Col. Chamilpa, 62209, Cuernavaca, Morelos (Mexico); Hu, Hailin [Departamento de Materiales Solares, Centro de Investigacion en Energia, UNAM, Av. Xochicalco S/N, Temixco, 62580, Morelos (Mexico)

    2007-09-22

    In this work, we report the morphological and electrochromic properties of electrochemically synthesized polyaniline (PANI) thin films on bare and modified indium-tin oxide (ITO) glass substrates. In the last case, the surface of ITO glass was covered by a self-assembled monolayer of N-phenyl-{gamma}-aminopropyl-trimethoxysilane (PAPTS). Atomic force microscopy images and perfilometry show that smoother and thinner PANI films were grown on PAPTS-modified ITO substrates. PANI-based electrochromic devices (ECDs) were assembled by using a viscous polymeric electrolyte (PE) of LiClO{sub 4} and polymethyl methacrylate (PMMA) co-dissolved in a mixture of propylene and ethylene carbonate. The architectural design of the devices was glass/ITO/PANI/PE/ITO/glass. A dual ECD was also prepared by collocating a poly(3-methylthiophene) (P3MT) thin film as a complementary electrochromic element. The effect of the PAPTS-modified ITO substrate is reflected in a higher optical transmittance at bleach state and a little less color change at 550 nm of PANI-based ECDs. (author)

  16. Nanoparticle and nanosphere mask for etching of ITO nanostructures and their reflection properties

    International Nuclear Information System (INIS)

    Xu, Cigang; Deng, Ligang; Holder, Adam; Bailey, Louise R.; Proudfoot, Gary; Thomas, Owain; Gunn, Robert; Cooke, Mike; Leendertz, Caspar; Bergmann, Joachim

    2015-01-01

    Au nanoparticles and polystyrene nanospheres were used as mask for plasma etching of indium tin oxide (ITO) layer. By reactive ion etching (RIE) processes, the morphology of polystyrene nanospheres can be tuned through chemical or physical etching, and Au nanoparticle mask can result in ITO nanostructures with larger aspect ratio than nanosphere mask. During inductively coupled plasma (ICP) processes, Au nanoparticle mask was not affected by the thermal effect of plasma, whereas temperature of the substrate was essential to protect nanospheres from the damaging effect of plasma. Physical bombardment in the plasma can also modify the nanospheres. It was observed that under the same process conditions, the ratio of CH 4 and H 2 in the process gas can affect the etching rate of ITO without completely etching the nanospheres. The morphology of ITO nanostructures also depends on process conditions. The resulting ITO nanostructures show lower reflection in a spectral range of 400-1000 nm than c-Si and conventional antireflection layer of SiN x film. ITO nanostructures obtained after etching (scale bar = 200 nm). (copyright 2015 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  17. Synthesis and Characterization of Graphene/ITO Nanoparticle Hybrid Transparent Conducting Electrode

    Institute of Scientific and Technical Information of China (English)

    Jae-Kwan Kim; Ji-Myon Lee

    2018-01-01

    The combination of graphene with conductive nanoparticles, forming graphene–nanoparticle hybrid materials, offers a number of excellent properties for advanced engineering applications. A novel and simple method was developed to deposit 10 wt% tin-doped indium tin oxide (ITO) nanoparticles on graphene. The method involved a combination of a solution-based environmen-tally friendly electroless deposition approach and subse-quent vacuum annealing.A stable organic-free solution of ITO was prepared from economical salts of In(NO3)3?H2O and SnCl4. The obtained ITO nanostructure exhibited a unique architecture, with uniformly dispersed 25–35 nm size ITO nanoparticles, containing only the crystallized In2O3phase.The synthesized ITO nanoparticles–graphene hybrid exhibited very good and reproducible optical transparency in the visible range (more than 85%) and a 28.2% improvement in electrical conductivity relative to graphene synthesized by chemical vapor deposition.It was observed that the ITO nanoparticles affect the position of the Raman signal of graphene,in which the D,G,and 2D peaks were redshifted by 5.65, 5.69, and 9.74 cm-1,respectively, and the annealing conditions had no signifi-cant effect on the Raman signatures of graphene.

  18. Synthesis and Characterization of Graphene/ITO Nanoparticle Hybrid Transparent Conducting Electrode

    Science.gov (United States)

    Hemasiri, Bastian Waduge Naveen Harindu; Kim, Jae-Kwan; Lee, Ji-Myon

    2018-03-01

    The combination of graphene with conductive nanoparticles, forming graphene-nanoparticle hybrid materials, offers a number of excellent properties for advanced engineering applications. A novel and simple method was developed to deposit 10 wt% tin-doped indium tin oxide (ITO) nanoparticles on graphene. The method involved a combination of a solution-based environmentally friendly electroless deposition approach and subsequent vacuum annealing. A stable organic-free solution of ITO was prepared from economical salts of In(NO3) 3 · H2O and SnCl4. The obtained ITO nanostructure exhibited a unique architecture, with uniformly dispersed 25-35 nm size ITO nanoparticles, containing only the crystallized In2O3 phase. The synthesized ITO nanoparticles-graphene hybrid exhibited very good and reproducible optical transparency in the visible range (more than 85%) and a 28.2% improvement in electrical conductivity relative to graphene synthesized by chemical vapor deposition. It was observed that the ITO nanoparticles affect the position of the Raman signal of graphene, in which the D, G, and 2D peaks were redshifted by 5.65, 5.69, and 9.74 cm-1, respectively, and the annealing conditions had no significant effect on the Raman signatures of graphene. [Figure not available: see fulltext.

  19. Radiation induced leakage current and stress induced leakage current in ultra-thin gate oxides

    International Nuclear Information System (INIS)

    Ceschia, M.; Paccagnella, A.; Cester, A.; Scarpa, A.

    1998-01-01

    Low-field leakage current has been measured in thin oxides after exposure to ionizing radiation. This Radiation Induced Leakage Current (RILC) can be described as an inelastic tunneling process mediated by neutral traps in the oxide, with an energy loss of about 1 eV. The neutral trap distribution is influenced by the oxide field applied during irradiation, thus indicating that the precursors of the neutral defects are charged, likely being defects associated to trapped holes. The maximum leakage current is found under zero-field condition during irradiation, and it rapidly decreases as the field is enhanced, due to a displacement of the defect distribution across the oxide towards the cathodic interface. The RILC kinetics are linear with the cumulative dose, in contrast with the power law found on electrically stressed devices

  20. On the Mechanism of In Nanoparticle Formation by Exposing ITO Thin Films to Hydrogen Plasmas.

    Science.gov (United States)

    Fan, Zheng; Maurice, Jean-Luc; Chen, Wanghua; Guilet, Stéphane; Cambril, Edmond; Lafosse, Xavier; Couraud, Laurent; Merghem, Kamel; Yu, Linwei; Bouchoule, Sophie; Roca I Cabarrocas, Pere

    2017-10-31

    We present our systematic work on the in situ generation of In nanoparticles (NPs) from the reduction of ITO thin films by hydrogen (H 2 ) plasma exposure. In contrast to NP deposition from the vapor phase (i.e., evaporation), the ITO surface can be considered to be a solid reservoir of In atoms thanks to H 2 plasma reduction. On one hand, below the In melting temperature, solid In NP formation is governed by the island-growth mode, which is a self-limiting process because the H 2 plasma/ITO interaction will be gradually eliminated by the growing In NPs that cover the ITO surface. On the other hand, we show that above the melting temperature In droplets prefer to grow along the grain boundaries on the ITO surface and dramatic coalescence occurs when the growing NPs connect with each other. This growth-connection-coalescence behavior is even strengthened on In/ITO bilayers, where In particles larger than 10 μm can be formed, which are made of evaporated In atoms and in situ released ones. Thanks to this understanding, we manage to disperse dense evaporated In NPs under H 2 plasma exposure when inserting an ITO layer between them and substrate like c-Si wafer or glass by modifying the substrate surface chemistry. Further studies are needed for more precise control of this self-assembling method. We expect that our findings are not limited to ITO thin films but could be applicable to various metal NPs generation from the corresponding metal oxide thin films.

  1. High-performance all-printed amorphous oxide FETs and logics with electronically compatible electrode/ channel interface.

    Science.gov (United States)

    Sharma, Bhupendra Kumar; Stoesser, Anna; Mondal, Sandeep Kumar; Garlapati, Suresh K; Fawey, Mohammed H; Chakravadhanula, Venkata Sai Kiran; Kruk, Robert; Hahn, Horst; Dasgupta, Subho

    2018-06-12

    Oxide semiconductors typically show superior device performance compared to amorphous silicon or organic counterparts, especially, when they are physical vapor deposited. However, it is not easy to reproduce identical device characteristics when the oxide field-effect transistors (FETs) are solution-processed/ printed; the level of complexity further intensifies with the need to print the passive elements as well. Here, we developed a protocol for designing the most electronically compatible electrode/ channel interface based on the judicious material selection. Exploiting this newly developed fabrication schemes, we are now able to demonstrate high-performance all-printed FETs and logic circuits using amorphous indium-gallium-zinc oxide (a-IGZO) semiconductor, indium tin oxide (ITO) as electrodes and composite solid polymer electrolyte as the gate insulator. Interestingly, all-printed FETs demonstrate an optimal electrical performance in terms of threshold voltages and device mobility and may very well be compared with devices fabricated using sputtered ITO electrodes. This observation originates from the selection of electrode/ channel materials from the same transparent semiconductor oxide family, resulting in the formation of In-Sn-Zn-O (ITZO) based diffused a-IGZO/ ITO interface that controls doping density while ensuring high electrical performance. Compressive spectroscopic studies reveal that Sn doping mediated excellent band alignment of IGZO with ITO electrodes is responsible for the excellent device performance observed. All-printed n-MOS based logic circuits have also been demonstrated towards new-generation portable electronics.

  2. Digital power and performance analysis of inkjet printed ring oscillators based on electrolyte-gated oxide electronics

    Science.gov (United States)

    Cadilha Marques, Gabriel; Garlapati, Suresh Kumar; Dehm, Simone; Dasgupta, Subho; Hahn, Horst; Tahoori, Mehdi; Aghassi-Hagmann, Jasmin

    2017-09-01

    Printed electronic components offer certain technological advantages over their silicon based counterparts, like mechanical flexibility, low process temperatures, maskless and additive manufacturing possibilities. However, to be compatible to the fields of smart sensors, Internet of Things, and wearables, it is essential that devices operate at small supply voltages. In printed electronics, mostly silicon dioxide or organic dielectrics with low dielectric constants have been used as gate isolators, which in turn have resulted in high power transistors operable only at tens of volts. Here, we present inkjet printed circuits which are able to operate at supply voltages as low as ≤2 V. Our transistor technology is based on lithographically patterned drive electrodes, the dimensions of which are carefully kept well within the printing resolutions; the oxide semiconductor, the electrolytic insulator and the top-gate electrodes have been inkjet printed. Our inverters show a gain of ˜4 and 2.3 ms propagation delay time at 1 V supply voltage. Subsequently built 3-stage ring oscillators start to oscillate at a supply voltage of only 0.6 V with a frequency of ˜255 Hz and can reach frequencies up to ˜350 Hz at 2 V supply voltage. Furthermore, we have introduced a systematic methodology for characterizing ring oscillators in the printed electronics domain, which has been largely missing. Benefiting from this procedure, we are now able to predict the switching capacitance and driver capability at each stage, as well as the power consumption of our inkjet printed ring oscillators. These achievements will be essential for analyzing the performance and power characteristics of future inkjet printed digital circuits.

  3. Sputtered gold-coated ITO nanowires by alternating depositions from Indium and ITO targets for application in surface-enhanced Raman scattering

    International Nuclear Information System (INIS)

    Setti, Grazielle O.; Mamián-López, Mónica B.; Pessoa, Priscila R.; Poppi, Ronei J.; Joanni, Ednan; Jesus, Dosil P.

    2015-01-01

    Graphical abstract: - Highlights: • ITO nanowires were grown by the sputtering method using a new synthesis procedure. • By changing the deposition parameters the morphology and dimensions of the nanostructures were modified. • Seed layer thickness was an important factor for obtaining branched nanowires. • SERS substrates having good performance and a high application potential were produced. • The first Raman results for our substrates are already comparable to commercial substrates. - Abstract: Indium Tin oxide (ITO) nanowires were deposited by RF sputtering over oxidized silicon using ITO and Indium targets. The nanowires grew on the substrate with a catalyst layer of Indium by the vapor–liquid–solid (VLS) mechanism. Modifications in the deposition conditions affected the morphology and dimensions of the nanowires. The samples, after being covered with gold, were evaluated as surface-enhanced Raman scattering (SERS) substrates for detection of dye solutions and very good intensifications of the Raman signal were obtained. The SERS performance of the samples was also compared to that of a commercial SERS substrate and the results achieved were similar. To the best of our knowledge, this is the first time ITO nanowires were grown by the sputtering technique using oxide and metal targets

  4. Sputtered gold-coated ITO nanowires by alternating depositions from Indium and ITO targets for application in surface-enhanced Raman scattering

    Energy Technology Data Exchange (ETDEWEB)

    Setti, Grazielle O. [Institute of Chemistry, University of Campinas, Campinas, P.O. Box 6154, 13083-970 Campinas, SP (Brazil); Renato Archer Information Technology Center, Rodovia Dom Pedro I (SP-65), Km 143,6 – Amarais, 13069-901 Campinas, SP (Brazil); Mamián-López, Mónica B.; Pessoa, Priscila R.; Poppi, Ronei J. [Institute of Chemistry, University of Campinas, Campinas, P.O. Box 6154, 13083-970 Campinas, SP (Brazil); Joanni, Ednan, E-mail: ednan.joanni@cti.gov.br [Renato Archer Information Technology Center, Rodovia Dom Pedro I (SP-65), Km 143,6 – Amarais, 13069-901 Campinas, SP (Brazil); Jesus, Dosil P. [Institute of Chemistry, University of Campinas, Campinas, P.O. Box 6154, 13083-970 Campinas, SP (Brazil)

    2015-08-30

    Graphical abstract: - Highlights: • ITO nanowires were grown by the sputtering method using a new synthesis procedure. • By changing the deposition parameters the morphology and dimensions of the nanostructures were modified. • Seed layer thickness was an important factor for obtaining branched nanowires. • SERS substrates having good performance and a high application potential were produced. • The first Raman results for our substrates are already comparable to commercial substrates. - Abstract: Indium Tin oxide (ITO) nanowires were deposited by RF sputtering over oxidized silicon using ITO and Indium targets. The nanowires grew on the substrate with a catalyst layer of Indium by the vapor–liquid–solid (VLS) mechanism. Modifications in the deposition conditions affected the morphology and dimensions of the nanowires. The samples, after being covered with gold, were evaluated as surface-enhanced Raman scattering (SERS) substrates for detection of dye solutions and very good intensifications of the Raman signal were obtained. The SERS performance of the samples was also compared to that of a commercial SERS substrate and the results achieved were similar. To the best of our knowledge, this is the first time ITO nanowires were grown by the sputtering technique using oxide and metal targets.

  5. Modelling of Leakage Current Through Double Dielectric Gate Stack in Metal Oxide Semiconductor Capacitor

    International Nuclear Information System (INIS)

    Fatimah A Noor; Mikrajuddin Abdullah; Sukirno; Khairurrijal

    2008-01-01

    In this paper, we have derived analytical expression of leakage current through double barriers in Metal Oxide Semiconductor (MOS) capacitor. Initially, electron transmittance through the MOS capacitor was derived by including the coupling between the transverse and longitudinal energies. The transmittance was then employed to obtain leakage current through the double barrier. In this model, we observed the effect of electron velocity due to the coupling effect and the oxide thickness to the leakage current. The calculated results showed that the leakage current decreases as the electron velocity increases. (author)

  6. Fast anodization fabrication of AAO and barrier perforation process on ITO glass

    Science.gov (United States)

    Liu, Sida; Xiong, Zuzhou; Zhu, Changqing; Li, Ma; Zheng, Maojun; Shen, Wenzhong

    2014-04-01

    Thin films of porous anodic aluminum oxide (AAO) on tin-doped indium oxide (ITO) substrates were fabricated through evaporation of a 1,000- to 2,000-nm-thick Al, followed by anodization with different durations, electrolytes, and pore widening. A faster method to obtain AAO on ITO substrates has been developed, which with 2.5 vol.% phosphoric acid at a voltage of 195 V at 269 K. It was found that the height of AAO films increased initially and then decreased with the increase of the anodizing time. Especially, the barrier layers can be removed by extending the anodizing duration, which is very useful for obtaining perforation AAO and will broaden the application of AAO on ITO substrates.

  7. Effects of high dose gamma irradiation on ITO thin film properties

    Energy Technology Data Exchange (ETDEWEB)

    Alyamani, A. [National Nanotechnology Center, King Abdul-Aziz City for Science and Technology (KACST), Riyadh (Saudi Arabia); Mustapha, N., E-mail: nazirmustapha@hotmail.com [Dept. of Physics, College of Sciences, Al Imam Mohammad Ibn Saud Islamic University, P.O. Box 90950, Riyadh 11623 (Saudi Arabia)

    2016-07-29

    Transparent thin-film Indium Tin Oxides (ITO) were prepared on 0.7 mm thick glass substrates using a pulsed laser deposition (PLD) process with average thickness of 150 nm. The samples were then exposed to high gamma γ radiation doses by {sup 60}Co radioisotope. The films have been irradiated by performing exposure cycles up to 250 kGy total doses at room temperature. The surface structures before and after irradiation were analysed by x-ray diffraction. Atomic Force Microscopy (AFM) was performed on all samples before and after irradiation to investigate any change in the grain sizes, and also in the roughness of the ITO surface. We investigated the influence of γ irradiation on the spectra of transmittance T, in the ultraviolet-visible-near infrared spectrum using spectrophotometer measurements. Energy band gap E{sub g} was then calculated from the optical spectra for all ITO films. It was found that the optical band gap values decreased as the radiation dose was increased. To compare the effect of the irradiation on refractive index n and extinction coefficient k properties, additional measurements were done on the ITO samples before and after gamma irradiation using an ellipsometer. The optical constants n and k increased by increasing the irradiation doses. Electrical properties such as resistivity and sheet resistance were measured using the four-point probe method. The good optical, electrical and morphological properties maintained by the ITO films even after being exposed to high gamma irradiation doses, made them very favourable to be used as anodes for solar cells and as protective coatings in space windows. - Highlights: • Indium Tin Oxide (ITO) thin films were deposited by pulsed laser deposition. • Effects of Gamma irradiation were investigated. • Changes of optical transmission and electrical properties of ITO films were studied. • Intensity of the diffraction peaks and the film's structure changed with increasing irradiation doses.

  8. Oxidation of Phe454 in the Gating Segment Inactivates Trametes multicolor Pyranose Oxidase during Substrate Turnover

    Czech Academy of Sciences Publication Activity Database

    Halada, Petr; Brugger, D.; Volc, Jindřich; Peterbauer, C.K.; Leitner, C.; Haltrich, D.

    2016-01-01

    Roč. 11, č. 2 (2016), e0148108 E-ISSN 1932-6203 R&D Projects: GA MŠk(CZ) LO1509; GA MŠk MEB060910 Institutional support: RVO:61388971 Keywords : AMINO -ACID-RESIDUES * PROTEIN PHARMACEUTICALS * ENZYMATIC OXIDATION Subject RIV: EE - Microbiology, Virology Impact factor: 2.806, year: 2016

  9. Nanostructured Polyaniline Coating on ITO Glass Promotes the Neurite Outgrowth of PC 12 Cells by Electrical Stimulation.

    Science.gov (United States)

    Wang, Liping; Huang, Qianwei; Wang, Jin-Ye

    2015-11-10

    A conducting polymer polyaniline (PANI) with nanostructure was synthesized on indium tin oxide (ITO) glass. The effect of electrical stimulation on the proliferation and the length of neurites of PC 12 cells was investigated. The dynamic protein adsorption on PANI and ITO surfaces in a cell culture medium was also compared with and without electrical stimulation. The adsorbed proteins were characterized using SDS-PAGE. A PANI coating on ITO surface was shown with 30-50 nm spherical nanostructure. The number of PC 12 cells was significantly greater on the PANI/ITO surface than on ITO and plate surfaces after cell seeding for 24 and 36 h. This result confirmed that the PANI coating is nontoxic to PC 12 cells. The electrical stimulation for 1, 2, and 4 h significantly enhanced the cell numbers for both PANI and ITO conducting surfaces. Moreover, the application of electrical stimulation also improved the neurite outgrowth of PC 12 cells, and the number of PC 12 cells with longer neurite lengths increased obviously under electrical stimulation for the PANI surface. From the mechanism, the adsorption of DMEM proteins was found to be enhanced by electrical stimulation for both PANI/ITO and ITO surfaces. A new band 2 (around 37 kDa) was observed from the collected adsorbed proteins when PC 12 cells were cultured on these surfaces, and culturing PC 12 cells also seemed to increase the amount of band 1 (around 90 kDa). When immersing PANI/ITO and ITO surfaces in a DMEM medium without a cell culture, the number of band 3 (around 70 kDa) and band 4 (around 45 kDa) proteins decreased compared to that of PC 12 cell cultured surfaces. These results are valuable for the design and improvement of the material performance for neural regeneration.

  10. Investigation of interface property in Al/SiO2/ n-SiC structure with thin gate oxide by illumination

    Science.gov (United States)

    Chang, P. K.; Hwu, J. G.

    2017-04-01

    The reverse tunneling current of Al/SiO2/ n-SiC structure employing thin gate oxide is introduced to examine the interface property by illumination. The gate current at negative bias decreases under blue LED illumination, yet increases under UV lamp illumination. Light-induced electrons captured by interface states may be emitted after the light sources are off, leading to the recovery of gate currents. Based on transient characteristics of gate current, the extracted trap level is close to the light energy for blue LED, indicating that electron capture induced by lighting may result in the reduction of gate current. Furthermore, bidirectional C- V measurements exhibit a positive voltage shift caused by electron trapping under blue LED illumination, while a negative voltage shift is observed under UV lamp illumination. Distinct trapping and detrapping behaviors can be observed from variations in I- V and C- V curves utilizing different light sources for 4H-SiC MOS capacitors with thin insulators.

  11. ITO/Au/ITO sandwich structure for near-infrared plasmonics.

    Science.gov (United States)

    Fang, Xu; Mak, Chee Leung; Dai, Jiyan; Li, Kan; Ye, Hui; Leung, Chi Wah

    2014-09-24

    ITO/Au/ITO trilayers with varying gold spacer layer thicknesses were deposited on glass substrates by pulsed laser deposition. Transmission electron microscopy measurements demonstrated the continuous nature of the Au layer down to 2.4 nm. XRD patterns clearly showed an enhanced crystallinity of the ITO films promoted by the insertion of the gold layer. Compared with a single layer of ITO with a carrier concentration of 7.12 × 10(20) cm(-3), the ITO/Au/ITO structure achieved an effective carrier concentration as high as 3.26 × 10(22) cm(-3). Transmittance and ellipsometry measurements showed that the optical properties of ITO/Au/ITO films were greatly influenced by the thickness of the inserted gold layer. The cross-point wavelength of the trilayer samples was reduced with increasing gold layer thickness. Importantly, the trilayer structure exhibited a reduced loss (compared with plain Au) in the near-infrared region, suggesting its potential for plasmonic applications in the near-infrared range.

  12. Characterization of ITO/CdO/glass thin films evaporated by electron beam technique

    Directory of Open Access Journals (Sweden)

    Hussein Abdel-Hafez Mohamed and Hazem Mahmoud Ali

    2008-01-01

    Full Text Available A thin buffer layer of cadmium oxide (CdO was used to enhance the optical and electrical properties of indium tin oxide (ITO films prepared by an electron-beam evaporation technique. The effects of the thickness and heat treatment of the CdO layer on the structural, optical and electrical properties of ITO films were carried out. It was found that the CdO layer with a thickness of 25 nm results in an optimum transmittance of 70% in the visible region and an optimum resistivity of 5.1×10−3 Ω cm at room temperature. The effect of heat treatment on the CdO buffer layer with a thickness of 25 nm was considered to improve the optoelectronic properties of the formed ITO films. With increasing annealing temperature, the crystallinity of ITO films seemed to improve, enhancing some physical properties, such as film transmittance and conductivity. ITO films deposited onto a CdO buffer layer heated at 450 °C showed a maximum transmittance of 91% in the visible and near-infrared regions of the spectrum associated with the highest optical energy gap of 3.61 eV and electrical resistivity of 4.45×10−4 Ω cm at room temperature. Other optical parameters, such as refractive index, extinction coefficient, dielectric constant, dispersion energy, single effective oscillator energy, packing density and free carrier concentration, were also studied.

  13. Involvement of flocculin in negative potential-applied ITO electrode adhesion of yeast cells

    Science.gov (United States)

    Koyama, Sumihiro; Tsubouchi, Taishi; Usui, Keiko; Uematsu, Katsuyuki; Tame, Akihiro; Nogi, Yuichi; Ohta, Yukari; Hatada, Yuji; Kato, Chiaki; Miwa, Tetsuya; Toyofuku, Takashi; Nagahama, Takehiko; Konishi, Masaaki; Nagano, Yuriko; Abe, Fumiyoshi

    2015-01-01

    The purpose of this study was to develop novel methods for attachment and cultivation of specifically positioned single yeast cells on a microelectrode surface with the application of a weak electrical potential. Saccharomyces cerevisiae diploid strains attached to an indium tin oxide/glass (ITO) electrode to which a negative potential between −0.2 and −0.4 V vs. Ag/AgCl was applied, while they did not adhere to a gallium-doped zinc oxide/glass electrode surface. The yeast cells attached to the negative potential-applied ITO electrodes showed normal cell proliferation. We found that the flocculin FLO10 gene-disrupted diploid BY4743 mutant strain (flo10Δ /flo10Δ) almost completely lost the ability to adhere to the negative potential-applied ITO electrode. Our results indicate that the mechanisms of diploid BY4743 S. cerevisiae adhesion involve interaction between the negative potential-applied ITO electrode and the Flo10 protein on the cell wall surface. A combination of micropatterning techniques of living single yeast cell on the ITO electrode and omics technologies holds potential of novel, highly parallelized, microchip-based single-cell analysis that will contribute to new screening concepts and applications. PMID:26187908

  14. Synchrotron X-ray irradiation effects on the device characteristics and the resistance to hot-carrier damage of MOSFETs with 4 nm thick gate oxides

    International Nuclear Information System (INIS)

    Tanaka, Yuusuke; Tanabe, Akira; Suzuki, Katsumi

    1998-01-01

    The effects of synchrotron x-ray irradiation on the device characteristics and hot-carrier resistance of n- and p-channel metal oxide semiconductor field effect transistors (MOSFETs) with 4 nm thick gate oxides are investigated. In p-channel MOSFETs, device characteristics were significantly affected by the x-ray irradiation but completely recovered after annealing, while the device characteristics in n-channel MOSFETs were not noticeably affected by the irradiation. This difference appears to be due to a difference in interface-state generation. In p-channel MOSFETs, defects caused by boron-ion penetration through the gate oxides may be sensitive to x-ray irradiation, causing the generation of many interface states. These interface states are completely eliminated after annealing in hydrogen gas. The effects of irradiation on the resistance to hot-carrier degradation in annealed 4 nm thick gate-oxide MOSFETs were negligible even at an x-ray dose of 6,000 mJ/cm 2

  15. Demonstration of AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistors with silicon-oxy-nitride as the gate insulator

    International Nuclear Information System (INIS)

    Balachander, K.; Arulkumaran, S.; Egawa, T.; Sano, Y.; Baskar, K.

    2005-01-01

    AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistors (MOSHEMTs) were fabricated with plasma enhanced chemical vapor deposited silicon oxy-nitride (SiON) as an insulating layer. The compositions of SiON thin films were confirmed using X-ray photoelectron spectroscopy. The fabricated MOSHEMTs exhibited a very high saturation current density of 1.1 A/mm coupled with high positive operational gate voltage up to +7 V. The MOSHEMTs also exhibited four orders of low gate leakage current and high forward-on voltage when compared with the conventional HEMTs. The drain current collapse using gate pulse measurements showed only a negligible difference in the saturation current density revealing the drastic improvement in passivation of the surface states due to the high quality of dielectric thin films deposited. Thus, based on the improved direct-current operation, SiON can be considered to be a potential gate oxide comparable with other dielectric insulators

  16. Tungsten trioxide as high-{kappa} gate dielectric for highly transparent and temperature-stable zinc-oxide-based thin-film transistors

    Energy Technology Data Exchange (ETDEWEB)

    Lorenz, Michael; Wenckstern, Holger von; Grundmann, Marius [Universitaet Leipzig, Fakultaet fuer Physik und Geowissenschaften, Institut fuer Experimentelle Physik II, Linnestr. 5, 04103 Leipzig (Germany)

    2012-07-01

    We demonstrate metal-insulator-semiconductor field-effect transistors with high-{kappa}, room-temperature deposited, highly transparent tungsten trioxide (WO{sub 3}) as gate dielectric. The channel material consists of a zinc oxide (ZnO) thin-film. The transmittance and resistivity of WO{sub 3} films was tuned in order to obtain a highly transparent and insulating WO{sub 3} dielectric. The devices were processed by standard photolithography using lift-off technique. On top of the WO{sub 3} dielectric a highly transparent and conductive oxide consisting of ZnO: Al 3% wt. was deposited. The gate structure of the devices exhibits an average transmittance in the visible spectral range of 86%. The on/off-current ratio is larger than 10{sup 8} with off- and gate leakage-currents below 3 x 10{sup -8} A/cm{sup 2}. Due to the high relative permittivity of {epsilon}{sub r} {approx} 70, a gate voltage sweep of only 2 V is necessary to turn the transistor on and off with a minimum subthreshold swing of 80 mV/decade. The channel mobility of the transistors equals the Hall-effect mobility with a value of 5 cm{sup 2}/Vs. It is furthermore shown, that the devices are stable up to operating temperatures of at least 150 C.

  17. Very High Output Thermoelectric Devices Based on ITO Nanocomposites

    Science.gov (United States)

    Fralick, Gustave; Gregory, Otto J.

    2009-01-01

    A material having useful thermoelectric properties was synthesized by combining indium-tin-oxide (ITO) with a NiCoCrAlY alloy/alumina cermet. This material had a very large Seebeck coefficient with electromotive-force-versustemperature behavior that is considered to be excellent with respect to utility in thermocouples and other thermoelectric devices. When deposited in thin-film form, ceramic thermocouples offer advantages over precious-metal (based, variously, on platinum or rhodium) thermocouples that are typically used in gas turbines. Ceramic thermocouples exhibit high melting temperatures, chemical stability at high temperatures, and little or no electromigration. Oxide ceramics also resist oxidation better than metal thermocouples, cost substantially less than precious-metal thermocouples, and, unlike precious-metal thermocouples, do not exert catalytic effects.

  18. Comparison study of transparent RF-sputtered ITO/AZO and ITO/ZnO bilayers for near UV-OLED applications

    Science.gov (United States)

    Rezaie, Mahdiyar Nouri; Manavizadeh, Negin; Abadi, Ehsan Mohammadi Nasr; Nadimi, Ebrahim; Boroumand, Farhad Akbari

    2017-01-01

    Hybrid inorganic/organic light-emitting diodes have attracted much attention in the field of luminescent electronics due to the desired incorporation of high optoelectronic features of inorganic materials with the processability and variety of organic polymers. To generate and emit a near ultraviolet (N-UV) ray, wide band gap semiconductors can be applied in the organic light-emitting diodes (OLEDs). In this paper, zinc oxide (ZnO) and aluminum-doped ZnO (AZO) thin films are deposited by radio frequency (RF) sputtering above the ITO electrode and poly [2-methoxy-5-(2-ethyl-hexyloxy)-1,4-phenylene-vinylene] (MEH-PPV) conjugated polymer is utilized as a complementary p-type semiconductor in OLED structure. The impact of ZnO and AZO thickness on the structural, electrical, optical and morphological properties of ITO/AZO and ITO/ZnO bilayers are scrutinized and compared. Results show that with the enlargement of both ZnO and AZO film thickness, the physical properties are gradually improved resulting in the better quality of transparent conducting thin film. The average electrical resistivity of 8.4 × 10-4 and 1.1 × 10-3 Ω-cm, average sheet resistance of 32.9 and 42.3 Ω/sq, average transmittance of 88.3 and 87.3% and average FOM of 1.0 × 104 and 7.4 × 103 (Ω-cm)-1 are obtained for ITO/AZO and ITO/ZnO bilayers, respectively. Moreover, comparing the results indicates that the strain and the stress within the ITO/AZO bilayer are decreased nearly 19% with respect to ITO/ZnO bilayer which yield higher quality of crystal. Consequently, the physical properties of ITO/AZO bilayer is found to be superior regarding ITO/ZnO bilayer. For fabricated UV-OLEDs, the turn-on voltages, the characteristic energy (Et) and the total concentration of traps (Nt) for the devices with the structures of ITO/ZnO/MEH-PPV/Al and ITO/AZO/MEH-PPV/Al are obtained 12 and 14 V, 0.108 and 0.191 eV, 9.33 × 1016 and 5.22 × 1016 cm-3, respectively. Furthermore, according to the electroluminescence

  19. In-Ga-Zn-oxide thin-film transistors with Sb2TeOx gate insulators fabricated by reactive sputtering using a metallic Sb2Te target

    International Nuclear Information System (INIS)

    Cheong, Woo-Seok

    2011-01-01

    Using reactive sputtering, we made transparent amorphous Sb 2 TeO x thin films from a metallic Sb 2 Te target in an oxidizing atmosphere. In-Ga-Zn-oxide thin-film transistors (IGZO TFTs) with Sb 2 TeO x gate insulators deposited at room temperature showed a large hysteresis with a counter clockwise direction, which was caused by mobile charges in the gate insulators. The problems of the mobile charges was solved by using Sb 2 TeO x films formed at 250 .deg. C. After the IGZO TFT had been annealed at 200 .deg. C for 1 hour in an O 2 ambient, the mobility of the IGZO TFT was 22.41 cm 2 /Vs, and the drain current on-off ratio was ∼10 8 .

  20. Deposition and characterization of ITO films produced by laser ablation at 355 nm

    DEFF Research Database (Denmark)

    Holmelund, E.; Thestrup Nielsen, Birgitte; Schou, Jørgen

    2002-01-01

    Indium tin oxide (ITO) films have been deposited by pulsed laser deposition (PLD) at 355 nm. Even though the absorption of laser light at the wavelength 355 nm is much smaller than that of the standard excimer lasers for PLD at 248 nm and 193 nm, high-quality films can be produced. At high fluence...

  1. Optimization of CVD parameters for long ZnO NWs grown on ITO

    Indian Academy of Sciences (India)

    The optimization of chemical vapour deposition (CVD) parameters for long and vertically aligned (VA) ZnO nanowires (NWs) were investigated. Typical ZnO NWs as a single crystal grown on indium tin oxide (ITO)-coated glass substrate were successfully synthesized. First, the conducted side of ITO–glass substrate was ...

  2. From Pauli Matrices to Quantum Ito Formula

    International Nuclear Information System (INIS)

    Pautrat, Yan

    2005-01-01

    This paper answers important questions raised by the recent description, by Attal, of a robust and explicit method to approximate basic objects of quantum stochastic calculus on bosonic Fock space by analogues on the state space of quantum spin chains. The existence of that method justifies a detailed investigation of discrete-time quantum stochastic calculus. Here we fully define and study that theory and obtain in particular a discrete-time quantum Ito formula, which one can see as summarizing the commutation relations of Pauli matrices.An apparent flaw in that approximation method is the difference in the quantum Ito formulas, discrete and continuous, which suggests that the discrete quantum stochastic calculus differs fundamentally from the continuous one and is therefore not a suitable object to approximate subtle phenomena. We show that flaw is only apparent by proving that the continuous-time quantum Ito formula is actually a consequence of its discrete-time counterpart

  3. Improvement of organic solar cells by flexible substrate and ITO surface treatments

    International Nuclear Information System (INIS)

    Cheng, Yuang-Tung; Ho, Jyh-Jier; Wang, Chien-Kun; Lee, William; Lu, Chih-Chiang; Yau, Bao-Shun; Nain, Jhen-Liang; Chang, Shun-Hsyung; Chang, Chiu-Cheng; Wang, Kang L.

    2010-01-01

    In this paper, surface treatments on polyethylene terephthalate with polymeric hard coating (PET-HC) substrates are described. The effect of the contact angle on the treatment is first investigated. It has been observed that detergent is quite effective in removing organic contamination on the flexible PET-HC substrates. Next, using a DC-reactive magnetron sputter, indium tin oxide (ITO) thin films of 90 nm are grown on a substrate treated by detergent. Then, various ITO surface treatments are made for improving the performance of the finally developed organic solar cells with structure Al/P3HT:PCBM/PEDOT:PSS/ITO/PET. It is found that the parameters of the ITO including resistivity, carrier concentration, transmittance, surface morphology, and work function depended on the surface treatments and significantly influence the solar cell performance. With the optimal conditions for detergent treatment on flexible PET substrates, the ITO film with a resistivity of 5.6 x 10 -4 Ω cm and average optical transmittance of 84.1% in the visible region are obtained. The optimal ITO surface treated by detergent for 5 min and then by UV ozone for 20 min exhibits the best WF value of 5.22 eV. This improves about 8.30% in the WF compared with that of the untreated ITO film. In the case of optimal treatment with the organic photovoltaic device, meanwhile, 36.6% enhancement in short circuit current density (J sc ) and 92.7% enhancement in conversion efficiency (η) over the untreated solar cell are obtained.

  4. Corundum nanostructure ITO film fabrication: An approach for physical properties assessment

    International Nuclear Information System (INIS)

    Solieman, A.; Zayed, M.K.; Alamri, S.N.; Al-Dahoudi, N.; Aegerter, M.A.

    2012-01-01

    Highlights: ► Transparent conductive nanostructured ITO films. ► Synthesis of ITO nanoparticles with corundum structure phase by the hydrothermal process. ► Deposition of nanoparticulate ITO films by spin coating technique. ► Curing of ITO films using UV irradiation at low temperatures. - Abstract: Corundum (hexagonal) structure indium tin oxide (h-ITO) nanocrystals have been synthesized by subjecting an aqueous solution of In and Sn chlorides (Sn/In 8 wt.%) to a hydrothermal process followed by annealing at 450 °C in forming gas for 1 h. The annealing temperature was selected based on thermo-gravimetric analysis (TGA) and differential thermal analysis (DTA) of the dried precipitated powder, which showed a stable weight and phase at temperatures above 420 °C. X-ray diffraction (XRD) patterns showed the formation of orthorhombic InOOH precipitates that is transformed, after annealing, into h-ITO nanocrystals with 32 nm average crystal size. For nanostructure film deposition, dispersed sols of the prepared nanocrystals were spun coated on glass substrates. The films were densified by UV irradiation, whilst four-probe method was used to measure its sheet resistance. A sheet resistance as low as 10.6 kΩ □ have been reached. Scanning electron microscope (SEM) and high resolution transmission electron microscope (HRTEM) showed that the films have high surface roughness and nanopores. The transmittance spectra of the nanostructure films were measured in the UV–vis–NIR wavelength range. In addition to its low resistivity, nanostructure h-ITO films showed a wide range of transparency.

  5. Flexible diode of polyaniline/ITO heterojunction on PET substrate

    Science.gov (United States)

    Bera, A.; Deb, K.; Kathirvel, V.; Bera, T.; Thapa, R.; Saha, B.

    2017-10-01

    Hybrid organic-inorganic heterojunction between polyaniline and ITO film coated on flexible polyethylene terephthalate (PET) substrate has been prepared through vapor phase polymerization process. Polaron and bipolaron like defect states induced hole transport and exceptional mobility makes polyaniline a noble hole transport layer. Thus a p-n junction has been obtained between the hole transport layer of polyaniline and highly conductive n-type layer of ITO film. The synthesis process was carried out using FeCl3 as polymerizing agent in the oxidative chemical polymerization process. The prepared polyaniline has been found to be crystalline on characterization through X-ray diffraction measurement. X-ray photoelectron spectroscopic measurements were done for compositional analysis of the prepared film. The UV-vis-NIR absorbance spectra obtained for polyaniline shows the characteristics absorbance as observed for highly conductive polyaniline and confirms the occurrence of partially oxidized emeraldine form of polyaniline. The energy band gap of the polyaniline has been obtained as 2.52 eV, by analyzing the optical transmittance spectra. A rectifying behavior has been observed in the electrical J-V plot, which is of great significance in designing polymer based flexible electronic devices.

  6. Low-Cost Upscaling Compatibility of Five Different ITO-Free Architectures for Polymer Solar Cells

    DEFF Research Database (Denmark)

    Angmo, Dechan; Gonzalez-Valls, Irene; Veenstra, Sjoerd

    2013-01-01

    Five different indium-tin-oxide free (ITO-free) polymer solar cell architectures provided by four participating research institutions that all presented a laboratory cell performance sufficient for use in mobile and information and communication technology (ICT) were evaluated based on photovoltaic...... performance and lifetime tests according to the ISOS protocols. The comparison of the different device architectures was performed using the same active material (P3HT: PCBM) and tested against an ITO-based reference device. The active area was 1 cm2 and rigid glass or flexible polyester substrates were...

  7. Wavelet-fractal approach to surface characterization of nanocrystalline ITO thin films

    International Nuclear Information System (INIS)

    Raoufi, Davood; Kalali, Zahra

    2012-01-01

    In this study, indium tin oxide (ITO) thin films were prepared by electron beam deposition method on glass substrates at room temperature (RT). Surface morphology characterization of ITO thin films, before and after annealing at 500 °C, were investigated by analyzing the surface profile of atomic force microscopy (AFM) images using wavelet transform formalism. The wavelet coefficients related to the thin film surface profiles have been calculated, and then roughness exponent (α) of the films has been estimated using the scalegram method. The results reveal that the surface profiles of the films before and after annealing process have self-affine nature.

  8. The Effect of Deposition Rate on Electrical, Optical and Structural Properties of ITO Thin Films

    Directory of Open Access Journals (Sweden)

    P. S. Raghupathi

    2005-01-01

    Full Text Available Indium tin oxide (ITO thin films have been prepared using the reactive evaporation technique on glass substrates in an oxygen atmosphere. It is found that the deposition rate plays prominent role in controlling the electrical and optical properties of the ITO thin films. Resistivity, electrical conductivity, activation energy, optical transmission and band gap energy were investigated. A transmittance value of more than 90% in the visible region of the spectrum and an electrical conductivity of 3x10–6 Ωm has been obtained with a deposition rate of 2 nm/min. XRD studies showed that the films are polycrystalline.

  9. Electrical characterization of the ITO/NiPc/PEDOT : PSS junction diode

    Energy Technology Data Exchange (ETDEWEB)

    Shah, Mutabar; Sayyad, M H; Karimov, Kh S; Wahab, Fazal, E-mail: mutabar_shah@hotmail.co, E-mail: mutabarshah@gmail.co [Ghulam Ishaq Khan Institute of Engineering Sciences and Technology, Topi, District Swabi, Khyber Pakhtunkhwa 23640 (Pakistan)

    2010-10-13

    This paper reports on the fabrication and characterization of an ITO/NiPc/PEDOT : PSS junction diode. A thin film of nickel phthalocyanine (NiPc) was deposited by the thermal vacuum deposition method on indium tin oxide (ITO) used as a substrate. The current-voltage characteristics of the diode were measured at room temperature under dark condition and showed rectifying behaviour. The values of several electrical parameters such as ideality factor, barrier height, conductivity, and series and shunt resistances were calculated.

  10. Electrodeposition of lead on ITO electrode: influence of copper as an additive

    International Nuclear Information System (INIS)

    Avellaneda, Cesar O.; Napolitano, Marcos A.; Kaibara, Evandro K.; Bulhoes, Luis O.S.

    2005-01-01

    The reversible electrodeposition of metallic lead onto indium-tin oxide coated glass (ITO) was investigated and the influence of Cu(NO 3 ) 2 ·3H 2 O as additive was evaluated. The presence of Cu 2+ in the electrolytic solution produces a higher variation in the optical transmissivity. The optical response of the system changes from 85 to 10% relative to the ITO coated substrate. The kinetics of the electroreduction process of the Pb 2+ and Cu 2+ from the electrolytes has been determined by electrochemical impedance spectroscopy (EIS) at different electrodeposition potentials. This system may be a promising candidate for electrochromic materials

  11. Pilot production of 4 sq cm ITO/InP photovoltaic solar cells

    Science.gov (United States)

    Gessert, T. A.; Li, X.; Coutts, T. J.; Tzafaras, N.

    1991-01-01

    Experimental results of a pilot production of 32 4-sq cm indium tin oxide (ITO)InP space solar cells are presented. The discussion includes analysis of the device performance of the best cells produced as well as the performance range of all production cells. The experience gained from the production is discussed, indicating other issues that may be encountered when large-scale productions are initiated. Available data on a 4-sq cm ITO/InP cell that was flown on the UoSAT-5 satellite is reported.

  12. Quantum Ito's formula and stochastic evolutions

    International Nuclear Information System (INIS)

    Hudson, R.L.; Parthasarathy, K.R.

    1984-01-01

    Using only the Boson canonical commutation relations and the Riemann-Lebesgue integral we construct a simple theory of stochastic integrals and differentials with respect to the basic field operator processes. This leads to a noncommutative Ito product formula, a realisation of the classical Poisson process in Fock space which gives a noncommutative central limit theorem, the construction of solutions of certain noncommutative stochastic differential equations, and finally to the integration of certain irreversible equations of motion governed by semigroups of completely positive maps. The classical Ito product formula for stochastic differentials with respect to Brownian motion and the Poisson process is a special case. (orig.)

  13. Chromosome mosaicism in hypomelanosis of Ito.

    Science.gov (United States)

    Ritter, C L; Steele, M W; Wenger, S L; Cohen, B A

    1990-01-01

    Our finding of chromosome mosaicism with a ring 22 in a retarded black boy with hypomelanosis of Ito prompted a review of this "syndrome." Most patients have a variety of non-dermal defects, particularly those affecting CNS function. Among karyotyped patients, most are chromosome mosaics of one sort or another. Hypomelanosis of Ito turns out to be a causable non-specific phenotype, i.e., a clinical marker for chromosome mosaicism of all different types in individuals with a dark enough skin to show lighter patches. Consequently, cytogenetic evaluation is indicated in all patients with this skin finding.

  14. ITO nanoparticles reused from ITO scraps and their applications to sputtering target for transparent conductive electrode layer

    OpenAIRE

    Hong, Sung-Jei; Song, Sang-Hyun; Kim, Byeong Jun; Lee, Jae-Yong; Kim, Young-Sung

    2017-01-01

    In this study, ITO nanoparticles (ITO-NPs) were reused from ITO target scraps to synthesize low cost ITO-NPs and to apply to make sputtering target for transparent conductive electrodes (TCEs). By controlling heat-treatment temperature as 980??C, we achieved reused ITO-NPs having Brunauer, Emmett and Teller specific surface area (BET SSA) and average particle size 8.05?m2/g and 103.8?nm, respectively. The BET SSA decreases along with increasing heat-treatment temperature. The ITO-NPs were gro...

  15. Electrical properties of ZnO-based bottom-gate thin film transistors fabricated by using radio frequency magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Navamathavan, R. [Nano Thin Film Materials Laboratory, Department of Physics, Cheju National University, Jeju 690-756 (Korea, Republic of)], E-mail: n_mathavan@yahoo.com; Choi, Chi Kyu [Nano Thin Film Materials Laboratory, Department of Physics, Cheju National University, Jeju 690-756 (Korea, Republic of); Park, Seong-Ju [Nanophotonic Semiconductors Laboratory, Department of Materials Science and Engineering, Gwangju Institute of Science and Technology, Gwangju 500-712 (Korea, Republic of)

    2009-05-05

    We report on enhancement-mode thin film transistors (TFTs) using ZnO as an active channel layer deposited by radio frequency (rf) magnetron sputtering at 300 deg. C. The TFT structure consisted of ZnO as a channel, SiN{sub x} as a gate insulator and indium tin oxide (ITO) as a gate which were deposited onto a Corning glass substrate. X-ray diffraction pattern revealed that dense columnar structure of closely packed ZnO nano grains along the c-axis. The transfer characteristics of a typical ZnO TFT exhibited a field effect mobility of 31 cm{sup 2}/V s, a drain current on/off ratio of 10{sup 4}, the low off-current value in the order of 10{sup -10} A, and a threshold voltage of 1.7 V. The transparent ZnO TFT exhibited n-channel enhancement mode behavior.

  16. Influence of sintering necks on the spectral behaviour of ITO clusters using the Discrete Dipole Approximation

    International Nuclear Information System (INIS)

    Skorupski, Krzysztof; Hellmers, Jens; Feng, Wen; Mroczka, Janusz; Wriedt, Thomas; Mädler, Lutz

    2015-01-01

    In this paper we study the spectral behaviour of indium tin oxide (ITO) nanoparticle clusters using different sinter neck models for the connections between the primary particles. The investigations include light scattering calculations based on the Discrete Dipole Approximation (DDA). The corresponding clusters are generated using the Cluster–Cluster algorithm proposed by Filippov et al. Different sintering neck models led to significantly different spectral features. A spectral neck factor that reveals the thickness of the necks connecting the primary particles with a simple measurement method is introduced. - Highlights: • We investigate the necking phenomenon in ITO fractal-like aggregates. • Extinction diagrams are sensitive to changes of the neck size. • We propose a simple procedure for measuring the neck size in ITO aggregates

  17. Ridge Minimization of Ablated Morphologies on ITO Thin Films Using Squared Quasi-Flat Top Beam

    Directory of Open Access Journals (Sweden)

    Hoon-Young Kim

    2018-03-01

    Full Text Available In this study, we explore the improvements in pattern quality that was obtained with a femtosecond laser with quasi-flat top beam profiles at the ablated edge of indium tin oxide (ITO thin films for the patterning of optoelectronic devices. To ablate the ITO thin films, a femtosecond laser is used that has a wavelength and pulse duration of 1030 nm and 190 fs, respectively. The squared quasi-flat top beam is obtained from a circular Gaussian beam using slits with varying x-y axes. Then, the patterned ITO thin films are measured using both scanning electron and atomic force microscopes. In the case of the Gaussian beam, the ridge height and width are approximately 39 nm and 1.1 μm, respectively, whereas, when the quasi-flat top beam is used, the ridge height and width are approximately 7 nm and 0.25 μm, respectively.

  18. Optical properties of ITO films obtained by high-frequency magnetron sputtering with accompanying ion treatment

    Energy Technology Data Exchange (ETDEWEB)

    Krylov, P. N., E-mail: ftt@uni.udm.ru; Zakirova, R. M.; Fedotova, I. V. [Udmurt State University (Russian Federation)

    2013-10-15

    A variation in the properties of indium-tin-oxide (ITO) films obtained by the method of reactive magnetron sputtering with simultaneous ion treatment is reported. The ITO films feature the following parameters in the optical range of 450-1100 nm: a transmission coefficient of 80%, band gap of 3.50-3.60 eV, and a refractive index of 1.97-2.06. All characteristics of the films depend on the ion-treatment current. The latter, during the course of deposition, reduces the resistivity of the ITO films with the smallest value of the resistivity being equal to 2 Multiplication-Sign 10{sup -3} {Omega} cm. The degradation of films with a high resistivity when kept in air is observed.

  19. Conduction noise absorption by ITO thin films attached to microstrip line utilizing Ohmic loss

    International Nuclear Information System (INIS)

    Kim, Sun-Hong; Kim, Sung-Soo

    2010-01-01

    For the aim of wide-band noise absorbers with a special design for low frequency performance, this study proposes conductive indium-tin oxide (ITO) thin films as the absorbent materials in microstrip line. ITO thin films were deposited on the polyimide film substrates by rf magnetron cosputtering of In 2 O 3 and Sn targets. The deposited ITO films show a typical value of electrical resistivity (∼10 -4 Ω m) and sheet resistance can be controlled in the range of 20-230 Ω by variation in film thickness. Microstrip line with characteristic impedance of 50 Ω was used for determining their noise absorbing properties. It is found that there is an optimum sheet resistance of ITO films for the maximum power absorption. Reflection parameter (S 11 ) is increased with decrease in sheet resistance due to impedance mismatch. On the while, transmission parameter (S 21 ) is decreased with decrease in sheet resistance due to larger Ohmic loss of the ITO films. Experimental results and computational prediction show that the optimum sheet resistance is about 100 Ω. For this film, greater power absorption is predicted in the lower frequency region than ferrite thin films of high magnetic loss, which indicates that Ohmic loss is the predominant loss parameter for power absorption in the low frequency range.

  20. Transparent conductive Ta2O5-codoped ITO thin films prepared by different heating process

    International Nuclear Information System (INIS)

    Zhang, B.; Dong, X.P.; Wu, J.S.; Xu, X.F.

    2008-01-01

    Tantalum-doped indium tin oxide thin films were deposited by a cosputtering technique with an ITO target and a Ta 2 O 5 target. The variations of microstructure, electrical and optical properties with substrate temperature and annealing temperature were investigated in some detail. Ta-doped ITO thin films showed better crystalline structure with different prominent plane orientation by different heating process. ITO:Ta thin films deposited at room temperature showed better optical and electrical properties. Increasing substrate temperature and reasonable annealing temperature could remarkably improve the optical and electrical properties of the films. The variation of carrier concentration had an important influence on near-IR reflection, near-UV absorption and optical bandgap. ITO:Ta thin films showed wider optical bandgap. ITO:Ta thin films under the optimum parameters had a sheet resistance of 10-20 and ohm;/sq and a transmittance of 85% with an optical bandgap of above 4.0 eV. (copyright 2008 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  1. Study on the electrical properties of ITO films deposited by facing target sputter deposition

    International Nuclear Information System (INIS)

    Kim, Youn J; Jin, Su B; Kim, Sung I; Choi, Yoon S; Choi, In S; Han, Jeon G

    2009-01-01

    This study examined the mechanism for the change in the electrical properties (carrier concentration (n) and mobility (μ)) of tin-doped indium oxide (ITO) films deposited by magnetron sputtering in a confined facing magnetic field. The relationship between the carrier concentration and the mobility was significantly different from the results reported for ITO films deposited by other magnetron sputtering processes. The lowest resistivity obtained for ITO films deposited in a confined facing magnetic field at low substrate temperatures (approximately 120 0 C) was 4.26 x 10 -4 Ω cm at a power density of 3 W cm -2 . Crystalline ITO films were obtained at a low power density range from 3 to 5 W cm -2 due to the increase in the substrate temperature from 120 to 162 0 C. This contributed to the increased carrier concentration and decreased electrical resistivity. X-ray photoelectron spectroscopy revealed an increase in the concentration of the Sn 4+ states. This was attributed to the formation of a crystalline ITO film, which effectively enhanced the carrier concentration and reduced the carrier mobility.

  2. A transparent flexible z-axis sensitive multi-touch panel based on colloidal ITO nanocrystals.

    Science.gov (United States)

    Sangeetha, N M; Gauvin, M; Decorde, N; Delpech, F; Fazzini, P F; Viallet, B; Viau, G; Grisolia, J; Ressier, L

    2015-08-07

    Bottom-up fabrication of a flexible multi-touch panel prototype based on transparent colloidal indium tin oxide (ITO) nanocrystal (NC) films is presented. A series of 7% Sn(4+) doped ITO NCs protected by oleate, octanoate and butanoate ligands are synthesized and characterized by a battery of techniques including, high resolution transmission electron microscopy, X-ray diffraction, (1)H, (13)C and (119)Sn nuclear magnetic resonance spectroscopy, and the related diffusion ordered spectroscopy. Electrical resistivities of transparent films of these NCs assembled on flexible polyethylene terephthalate substrates by convective self-assembly from their suspension in toluene decrease with the ligand length, from 220 × 10(3) for oleate ITO to 13 × 10(3)Ω cm for butanoate ITO NC films. A highly transparent, flexible touch panel based on a matrix of strain gauges derived from the least resistive film of 17 nm butanoate ITO NCs sensitively detects the lateral position (x, y) of the touch as well as its intensity over the z-axis. Being compatible with a stylus or bare/gloved finger, a larger version of this module may be readily implemented in upcoming flexible screens, enabling navigation capabilities over all three axes, a feature highly desired by the display industry.

  3. Electrode patterning of ITO thin films by high repetition rate fiber laser

    Energy Technology Data Exchange (ETDEWEB)

    Lin, H.K., E-mail: HKLin@mail.npust.edu.tw; Hsu, W.C.

    2014-07-01

    Indium tin oxide (ITO) thin films are deposited on glass substrates using a radio frequency magnetron sputtering system. As-deposited ITO thin film was 100 nm in thickness and a transmittance of ITO film on glass substrate was 79% at 550 nm. Conductive electrodes are then patterned on the ITO films using a high repetition rate fiber laser system followed by a wet chemical etching process. The electrical, optical and structural properties of the patterned samples are evaluated by means of a four-point probe technique, spectrophotometer, X-ray diffraction (XRD), scanning electron microscopy (SEM) and atomic force microscopy (AFM). The results show that the samples annealed with a pulse repetition rate of 150 kHz or 400 kHz have a low sheet resistivity of 21 Ω/□ and a high optical transmittance of 90%. In addition, it is shown that a higher pulse repetition rate reduces both the residual stress and the surface roughness of the patterned specimens. Therefore, the present results suggest that a pulse repetition rate of 400 kHz represents the optimal processing condition for the patterning of crack-free ITO-coated glass substrates with good electrical and optical properties.

  4. Electrode patterning of ITO thin films by high repetition rate fiber laser

    International Nuclear Information System (INIS)

    Lin, H.K.; Hsu, W.C.

    2014-01-01

    Indium tin oxide (ITO) thin films are deposited on glass substrates using a radio frequency magnetron sputtering system. As-deposited ITO thin film was 100 nm in thickness and a transmittance of ITO film on glass substrate was 79% at 550 nm. Conductive electrodes are then patterned on the ITO films using a high repetition rate fiber laser system followed by a wet chemical etching process. The electrical, optical and structural properties of the patterned samples are evaluated by means of a four-point probe technique, spectrophotometer, X-ray diffraction (XRD), scanning electron microscopy (SEM) and atomic force microscopy (AFM). The results show that the samples annealed with a pulse repetition rate of 150 kHz or 400 kHz have a low sheet resistivity of 21 Ω/□ and a high optical transmittance of 90%. In addition, it is shown that a higher pulse repetition rate reduces both the residual stress and the surface roughness of the patterned specimens. Therefore, the present results suggest that a pulse repetition rate of 400 kHz represents the optimal processing condition for the patterning of crack-free ITO-coated glass substrates with good electrical and optical properties.

  5. General observation of the memory effect in metal-insulator-ITO structures due to indium diffusion

    International Nuclear Information System (INIS)

    Wu, Xiaojing; Xu, Huihua; Zhao, Ni; Wang, Yu; Rogach, Andrey L; Shen, Yingzhong

    2015-01-01

    Resistive random access memory (RRAM) devices based on metal oxides, organic molecules and inorganic nanocrystals (NCs) have been studied extensively in recent years. Different memory switching mechanisms have been proposed and shown to be closely related to the device architectures. In this work, we demonstrate that the use of an ITO/active layer/InGa structure can yield nonvolatile resistive memory behavior in a variety of active materials, including polymers, organic small molecules, and colloidal NCs. Through the electrode material and thickness-dependent study, we show that the ON state of the devices is associated with filamentary conduction induced by indium diffusion from the ITO electrode, occurring mostly within around 40–50 nm from the ITO/active layer interface. A negative differential resistance (NDR) regime is observed during transition from the ON to OFF state, and is explained by the space charge limited current (SCLC) effect due to hole injection at the ITO/active layer interface. Our study reveals the impact of indium diffusion at the ITO/active layer interface, an important factor that should be taken into consideration when designing thin printed RRAM devices. (paper)

  6. Physical and electrical characterizations of AlGaN/GaN MOS gate stacks with AlGaN surface oxidation treatment

    Science.gov (United States)

    Yamada, Takahiro; Watanabe, Kenta; Nozaki, Mikito; Shih, Hong-An; Nakazawa, Satoshi; Anda, Yoshiharu; Ueda, Tetsuzo; Yoshigoe, Akitaka; Hosoi, Takuji; Shimura, Takayoshi; Watanabe, Heiji

    2018-06-01

    The impacts of inserting ultrathin oxides into insulator/AlGaN interfaces on their electrical properties were investigated to develop advanced AlGaN/GaN metal–oxide–semiconductor (MOS) gate stacks. For this purpose, the initial thermal oxidation of AlGaN surfaces in oxygen ambient was systematically studied by synchrotron radiation X-ray photoelectron spectroscopy (SR-XPS) and atomic force microscopy (AFM). Our physical characterizations revealed that, when compared with GaN surfaces, aluminum addition promotes the initial oxidation of AlGaN surfaces at temperatures of around 400 °C, followed by smaller grain growth above 850 °C. Electrical measurements of AlGaN/GaN MOS capacitors also showed that, although excessive oxidation treatment of AlGaN surfaces over around 700 °C has an adverse effect, interface passivation with the initial oxidation of the AlGaN surfaces at temperatures ranging from 400 to 500 °C was proven to be beneficial for fabricating high-quality AlGaN/GaN MOS gate stacks.

  7. Electrical Performance and Reliability Improvement of Amorphous-Indium-Gallium-Zinc-Oxide Thin-Film Transistors with HfO2 Gate Dielectrics by CF4 Plasma Treatment

    Science.gov (United States)

    Fan, Ching-Lin; Tseng, Fan-Ping; Tseng, Chiao-Yuan

    2018-01-01

    In this work, amorphous indium-gallium-zinc oxide thin-film transistors (a-IGZO TFTs) with a HfO2 gate insulator and CF4 plasma treatment was demonstrated for the first time. Through the plasma treatment, both the electrical performance and reliability of the a-IGZO TFT with HfO2 gate dielectric were improved. The carrier mobility significantly increased by 80.8%, from 30.2 cm2/V∙s (without treatment) to 54.6 cm2/V∙s (with CF4 plasma treatment), which is due to the incorporated fluorine not only providing an extra electron to the IGZO, but also passivating the interface trap density. In addition, the reliability of the a-IGZO TFT with HfO2 gate dielectric has also been improved by the CF4 plasma treatment. By applying the CF4 plasma treatment to the a-IGZO TFT, the hysteresis effect of the device has been improved and the device’s immunity against moisture from the ambient atmosphere has been enhanced. It is believed that the CF4 plasma treatment not only significantly improves the electrical performance of a-IGZO TFT with HfO2 gate dielectric, but also enhances the device’s reliability. PMID:29772767

  8. Electrical Performance and Reliability Improvement of Amorphous-Indium-Gallium-Zinc-Oxide Thin-Film Transistors with HfO2 Gate Dielectrics by CF4 Plasma Treatment

    Directory of Open Access Journals (Sweden)

    Ching-Lin Fan

    2018-05-01

    Full Text Available In this work, amorphous indium-gallium-zinc oxide thin-film transistors (a-IGZO TFTs with a HfO2 gate insulator and CF4 plasma treatment was demonstrated for the first time. Through the plasma treatment, both the electrical performance and reliability of the a-IGZO TFT with HfO2 gate dielectric were improved. The carrier mobility significantly increased by 80.8%, from 30.2 cm2/V∙s (without treatment to 54.6 cm2/V∙s (with CF4 plasma treatment, which is due to the incorporated fluorine not only providing an extra electron to the IGZO, but also passivating the interface trap density. In addition, the reliability of the a-IGZO TFT with HfO2 gate dielectric has also been improved by the CF4 plasma treatment. By applying the CF4 plasma treatment to the a-IGZO TFT, the hysteresis effect of the device has been improved and the device’s immunity against moisture from the ambient atmosphere has been enhanced. It is believed that the CF4 plasma treatment not only significantly improves the electrical performance of a-IGZO TFT with HfO2 gate dielectric, but also enhances the device’s reliability.

  9. Electrical Performance and Reliability Improvement of Amorphous-Indium-Gallium-Zinc-Oxide Thin-Film Transistors with HfO₂ Gate Dielectrics by CF₄ Plasma Treatment.

    Science.gov (United States)

    Fan, Ching-Lin; Tseng, Fan-Ping; Tseng, Chiao-Yuan

    2018-05-17

    In this work, amorphous indium-gallium-zinc oxide thin-film transistors (a-IGZO TFTs) with a HfO₂ gate insulator and CF₄ plasma treatment was demonstrated for the first time. Through the plasma treatment, both the electrical performance and reliability of the a-IGZO TFT with HfO₂ gate dielectric were improved. The carrier mobility significantly increased by 80.8%, from 30.2 cm²/V∙s (without treatment) to 54.6 cm²/V∙s (with CF₄ plasma treatment), which is due to the incorporated fluorine not only providing an extra electron to the IGZO, but also passivating the interface trap density. In addition, the reliability of the a-IGZO TFT with HfO₂ gate dielectric has also been improved by the CF₄ plasma treatment. By applying the CF₄ plasma treatment to the a-IGZO TFT, the hysteresis effect of the device has been improved and the device's immunity against moisture from the ambient atmosphere has been enhanced. It is believed that the CF₄ plasma treatment not only significantly improves the electrical performance of a-IGZO TFT with HfO₂ gate dielectric, but also enhances the device's reliability.

  10. A novel ITO/AZO/SiO2/p-Si frame SIS heterojunction fabricated by magnetron sputtering

    International Nuclear Information System (INIS)

    He, Bo; Wang, HongZhi; Li, YaoGang; Ma, ZhongQuan; Xu, Jing; Zhang, QingHong; Wang, ChunRui; Xing, HuaiZhong; Zhao, Lei; Rui, YiChuan

    2013-01-01

    Highlights: •Because the ITO/AZO double films lead to a great decrease of the lateral resistance. •The photon current can easily flow through top film entering the Cu front contact. •High photocurrent is obtained under a reverse bias. -- Abstract: The novel ITO/AZO/SiO 2 /p-Si SIS heterojunction has been fabricated by low temperature thermal oxidation an ultrathin silicon dioxide and RF sputtering deposition ITO/AZO double films on p-Si (1 0 0) polished substrate. The microstructural, optical and electrical properties of the ITO/AZO antireflection films were characterized by XRD, SEM, UV–VIS spectrophotometer, four point probe and Hall effect measurement, respectively. The results show that ITO/AZO films are of good quality. And XPS was carried out on the ultrathin SiO 2 film. The heterojunction shows strong rectifying behavior under a dark condition, which reveals that formation of a diode between AZO and p-Si. The ideality factor and the saturation current of this diode is 2.7 and 8.68 × 10 −5 A, respectively. High photocurrent is obtained under a reverse bias when the crystalline quality of ITO/AZO double films is good enough to transmit the light into p-Si. We can see that under reverse bias conditions the photocurrent of ITO/AZO/SiO 2 /p-Si SIS heterojunction is much higher than the photocurrent of AZO/SiO 2 /p-Si SIS heterojunction. Because the high quality crystallite and the good conductivity of ITO film which prepared by magnetron-sputtering on AZO film lead to a great decrease of the lateral resistance. The photon induced current can easily flow through ITO layer entering the Cu front contact. Thus, high photocurrent is obtained under a reverse bias

  11. Plasma treatment of ITO films for the formation of nanoparticles toward scalable production of novel nanostructure-based solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Xu, Cigang; Bailey, Louise R.; Proudfoot, Gary; Cooke, Mike [Oxford Instruments Plasma Technology, Bristol (United Kingdom); Eisenhawer, Bjoern; Jia, Guobin; Bergmann, Joachim; Falk, Fritz [Leibniz Institute of Photonic Technology, Jena (Germany); Ulyashin, Alexander [Department of Industrial Processes, SINTEF, Oslo (Norway)

    2015-01-01

    Plasma treatment of indium tin oxide (ITO) has been studied to form metallic nanoparticles (NPs) for nanostructure-based solar cells. It is demonstrated that NPs can be formed at temperatures as low as 100 C, and the size of NPs increases with temperature. An ITO layer treated at 100 C has higher transmission than that treated at 200 C for the same time. It is suggested that such NPs can be used for the conversion efficiency enhancement of ITO/Si heterojunction solar cells. It is also shown that NPs can be produced on different substrates covered by an ITO layer, such as ITO/Al foil, ITO/glass, ITO/stainless steel, and ITO/Si, where the resulting NPs were used for catalytic growth of Si nanowires (NWs). The morphology and density of Si NWs depend on a substrate. It is established that p-doped Si NWs show larger diameters, and n-doped Si NWs do not show obvious change of diameters compared to undoped Si NWs. New types of solar cell structures with combined radial and axial junctions have been proposed. As an example, p-n junction-based 3D structures using the NPs obtained from treatment of ITO film are presented. Finally, a potentially scalable process flow for fabrication of nanostructure-based solar cells is discussed. Schematic illustration of fabrication steps to produce the proposed novel solar cell with combined radial and axial junctions. (copyright 2015 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  12. Improved patterning of ITO coated with gold masking layer on glass substrate using nanosecond fiber laser and etching

    International Nuclear Information System (INIS)

    Tan, Nguyen Ngoc; Hung, Duong Thanh; Anh, Vo Tran; BongChul, Kang; HyunChul, Kim

    2015-01-01

    Highlights: • A new patterning method for ITO thin film is introduced. • Gold thin film is important in decrease spikes formed in ITO patterning process. • The laser pulse width occupies a significant effect the patterning surface quality. • Etching process is the effective method to remove the spikes at rims of pattern. • A considerable improvement over patterning quality is obtained by proposed method. - Abstract: In this paper, an indium–tin oxide (ITO) thin-film patterning method for higher pattern quality and productivity compared to the short-pulsed laser direct writing method is presented. We sputtered a thin ITO layer on a glass substrate, and then, plated a thin gold layer onto the ITO layer. The combined structure of the three layers (glass–ITO–gold) was patterned using laser-induced plasma generated by an ytterbium pulsed fiber laser (λ = 1064 nm). The results showed that the process parameters of 50 mm/s in scanning speed, 14 ns pulse duration, and a repetition rate of 7.5 kHz represented optimum conditions for the fabrication of ITO channels. Under these conditions, a channel 23.4 μm wide and 20 nm deep was obtained. However, built-up spikes (∼15 nm in height) resulted in a decrease in channel quality, and consequently, short circuit occurred at some patterned positions. These built-up spikes were completely removed by dipping the ITO layer into an etchant (18 wt.% HCl). A gold masking layer on the ITO surface was found to increase the channel surface quality without any decrease in ITO thickness. Moreover, the effects of repetition rate, scanning speed, and etching characteristics on surface quality were investigated

  13. Improved patterning of ITO coated with gold masking layer on glass substrate using nanosecond fiber laser and etching

    Energy Technology Data Exchange (ETDEWEB)

    Tan, Nguyen Ngoc; Hung, Duong Thanh; Anh, Vo Tran [High Safety Vehicle Core Technology Research Center, Department of Mechanical & Automotive Engineering, Inje University, Gimhae (Korea, Republic of); BongChul, Kang, E-mail: kbc@kumoh.ac.kr [Department of Inteligent Mechanical Engineering, Kumoh National Institute of Technology, Gumi (Korea, Republic of); HyunChul, Kim, E-mail: mechkhc@inje.ac.kr [High Safety Vehicle Core Technology Research Center, Department of Mechanical & Automotive Engineering, Inje University, Gimhae (Korea, Republic of)

    2015-05-01

    Highlights: • A new patterning method for ITO thin film is introduced. • Gold thin film is important in decrease spikes formed in ITO patterning process. • The laser pulse width occupies a significant effect the patterning surface quality. • Etching process is the effective method to remove the spikes at rims of pattern. • A considerable improvement over patterning quality is obtained by proposed method. - Abstract: In this paper, an indium–tin oxide (ITO) thin-film patterning method for higher pattern quality and productivity compared to the short-pulsed laser direct writing method is presented. We sputtered a thin ITO layer on a glass substrate, and then, plated a thin gold layer onto the ITO layer. The combined structure of the three layers (glass–ITO–gold) was patterned using laser-induced plasma generated by an ytterbium pulsed fiber laser (λ = 1064 nm). The results showed that the process parameters of 50 mm/s in scanning speed, 14 ns pulse duration, and a repetition rate of 7.5 kHz represented optimum conditions for the fabrication of ITO channels. Under these conditions, a channel 23.4 μm wide and 20 nm deep was obtained. However, built-up spikes (∼15 nm in height) resulted in a decrease in channel quality, and consequently, short circuit occurred at some patterned positions. These built-up spikes were completely removed by dipping the ITO layer into an etchant (18 wt.% HCl). A gold masking layer on the ITO surface was found to increase the channel surface quality without any decrease in ITO thickness. Moreover, the effects of repetition rate, scanning speed, and etching characteristics on surface quality were investigated.

  14. Optical and Electrical Performance of MOS-Structure Silicon Solar Cells with Antireflective Transparent ITO and Plasmonic Indium Nanoparticles under Applied Bias Voltage.

    Science.gov (United States)

    Ho, Wen-Jeng; Sue, Ruei-Siang; Lin, Jian-Cheng; Syu, Hong-Jang; Lin, Ching-Fuh

    2016-08-10

    This paper reports impressive improvements in the optical and electrical performance of metal-oxide-semiconductor (MOS)-structure silicon solar cells through the incorporation of plasmonic indium nanoparticles (In-NPs) and an indium-tin-oxide (ITO) electrode with periodic holes (perforations) under applied bias voltage. Samples were prepared using a plain ITO electrode or perforated ITO electrode with and without In-NPs. The samples were characterized according to optical reflectance, dark current voltage, induced capacitance voltage, external quantum efficiency, and photovoltaic current voltage. Our results indicate that induced capacitance voltage and photovoltaic current voltage both depend on bias voltage, regardless of the type of ITO electrode. Under a bias voltage of 4.0 V, MOS cells with perforated ITO and plain ITO, respectively, presented conversion efficiencies of 17.53% and 15.80%. Under a bias voltage of 4.0 V, the inclusion of In-NPs increased the efficiency of cells with perforated ITO and plain ITO to 17.80% and 16.87%, respectively.

  15. Interfacial Energy Alignment at the ITO/Ultra-Thin Electron Selective Dielectric Layer Interface and Its Effect on the Efficiency of Bulk-Heterojunction Organic Solar Cells.

    Science.gov (United States)

    Itoh, Eiji; Goto, Yoshinori; Saka, Yusuke; Fukuda, Katsutoshi

    2016-04-01

    We have investigated the photovoltaic properties of an inverted bulk heterojunction (BHJ) cell in a device with an indium-tin-oxide (ITO)/electron selective layer (ESL)/P3HT:PCBM active layer/MoOx/Ag multilayered structure. The insertion of only single layer of poly(diallyl-dimethyl-ammonium chloride) (PDDA) cationic polymer film (or poly(ethyleneimine) (PEI) polymeric interfacial dipole layer) and titanium oxide nanosheet (TN) films as an ESL effectively improved cell performance. Abnormal S-shaped curves were observed in the inverted BHJ cells owing to the contact resistance across the ITO/active layer interface and the ITO/PDDA/TN/active layer interface. The series resistance across the ITO/ESL interface in the inverted BHJ cell was successfully reduced using an interfacial layer with a positively charged surface potential with respect to ITO base electrode. The positive dipole in PEI and the electronic charge phenomena at the electrophoretic deposited TN (ED-TN) films on ITO contributed to the reduction of the contact resistance at the electrode interface. The surface potential measurement revealed that the energy alignment by the transfer of electronic charges from the ED-TN to the base electrodes. The insertion of the ESL with a large positive surface potential reduced the potential barrier for the electron injection at ITO/TN interface and it improved the photovoltaic properties of the inverted cell with an ITO/TN/active layer/MoOx/Ag structure.

  16. Optical and Electrical Performance of MOS-Structure Silicon Solar Cells with Antireflective Transparent ITO and Plasmonic Indium Nanoparticles under Applied Bias Voltage

    Directory of Open Access Journals (Sweden)

    Wen-Jeng Ho

    2016-08-01

    Full Text Available This paper reports impressive improvements in the optical and electrical performance of metal-oxide-semiconductor (MOS-structure silicon solar cells through the incorporation of plasmonic indium nanoparticles (In-NPs and an indium-tin-oxide (ITO electrode with periodic holes (perforations under applied bias voltage. Samples were prepared using a plain ITO electrode or perforated ITO electrode with and without In-NPs. The samples were characterized according to optical reflectance, dark current voltage, induced capacitance voltage, external quantum efficiency, and photovoltaic current voltage. Our results indicate that induced capacitance voltage and photovoltaic current voltage both depend on bias voltage, regardless of the type of ITO electrode. Under a bias voltage of 4.0 V, MOS cells with perforated ITO and plain ITO, respectively, presented conversion efficiencies of 17.53% and 15.80%. Under a bias voltage of 4.0 V, the inclusion of In-NPs increased the efficiency of cells with perforated ITO and plain ITO to 17.80% and 16.87%, respectively.

  17. Characteristics of ITO electrode grown by linear facing target sputtering with ladder type magnetic arrangement for organic light emitting diodes

    International Nuclear Information System (INIS)

    Jeong, Jin-A; Kim, Han-Ki; Lee, Jae-Young; Lee, Jung-Hwan; Bae, Hyo-Dae; Tak, Yoon-Heung

    2009-01-01

    The preparation and characteristics of indium tin oxide (ITO) electrodes grown using a specially designed linear facing target sputtering (LFTS) system with a ladder type magnet arrangement for organic light emitting diodes (OLED) are described. It was found that the electrical and optical properties of the ITO electrode were critically dependent on the Ar/O 2 flow ratio, while its structural and surface properties remained fairly constant regardless of the Ar/O 2 flow ratio, due to the low substrate temperature during the plasma damage-free sputtering. Under the optimized conditions, we obtained an ITO electrode with the lowest sheet resistance of 39.4 Ω/sq and high transmittance of 90.1% (550 nm wavelength) at room temperature. This suggests that LFTS is a promising low temperature and plasma damage free sputtering technology for preparing high-quality ITO electrodes for OLEDs and flexible OLEDs at room temperature.

  18. Understanding the mechanisms that change the conductivity of damaged ITO-coated polymeric films: A micro-mechanical investigation

    KAUST Repository

    Nasr Saleh, Mohamed

    2014-11-01

    Degradation from mechanical loading of transparent electrodes made of indium tin oxide (ITO) endangers the integrity of any material based on these electrodes, including flexible organic solar cells. However, how different schemes of degradation change the conductivity of ITO devices remains unclear. We propose a systematic micro-mechanics-based approach to clarify the relationship between degradation and changes in electrical resistance. By comparing experimentally measured channel crack densities to changes in electrical resistance returned by the different micro-mechanical schemes, we highlight the key role played by the residual conductivity in the interface between the ITO electrode and its substrate after delamination. We demonstrate that channel cracking alone does not explain the experimental observations. Our results indicate that delamination has to take place between the ITO electrode and the substrate layers and that the residual conductivity of this delaminated interface plays a major role in changes in electrical resistance of the degraded device. © 2014 Elsevier B.V.

  19. 7 CFR 254.4 - Application by an ITO.

    Science.gov (United States)

    2010-01-01

    ... 7 Agriculture 4 2010-01-01 2010-01-01 false Application by an ITO. 254.4 Section 254.4 Agriculture... INDIAN HOUSEHOLDS IN OKLAHOMA § 254.4 Application by an ITO. (a) Application to FNS Regional Office. An ITO which desires to participate in the Food Distribution Program shall file an application with the...

  20. Non-volatile nano-floating gate memory with Pt-Fe{sub 2}O{sub 3} composite nanoparticles and indium gallium zinc oxide channel

    Energy Technology Data Exchange (ETDEWEB)

    Hu, Quanli [Myongji University, Department of Nano Science and Engineering (Korea, Republic of); Lee, Seung Chang; Baek, Yoon-Jae [Myongji University, Department of Materials Science and Engineering (Korea, Republic of); Lee, Hyun Ho [Myongji University, Department of Chemical Engineering (Korea, Republic of); Kang, Chi Jung [Myongji University, Department of Nano Science and Engineering (Korea, Republic of); Kim, Hyun-Mi; Kim, Ki-Bum [Seoul National University, Department of Materials Science and Engineering (Korea, Republic of); Yoon, Tae-Sik, E-mail: tsyoon@mju.ac.kr [Myongji University, Department of Nano Science and Engineering (Korea, Republic of)

    2013-02-15

    Non-volatile nano-floating gate memory characteristics with colloidal Pt-Fe{sub 2}O{sub 3} composite nanoparticles with a mostly core-shell structure and indium gallium zinc oxide channel layer were investigated. The Pt-Fe{sub 2}O{sub 3} nanoparticles were chemically synthesized through the preferential oxidation of Fe and subsequent pileup of Pt into the core in the colloidal solution. The uniformly assembled nanoparticles' layer could be formed with a density of {approx}3 Multiplication-Sign 10{sup 11} cm{sup -2} by a solution-based dip-coating process. The Pt core ({approx}3 nm in diameter) and Fe{sub 2}O{sub 3}-shell ({approx}6 nm in thickness) played the roles of the charge storage node and tunneling barrier, respectively. The device exhibited the hysteresis in current-voltage measurement with a threshold voltage shift of {approx}4.76 V by gate voltage sweeping to +30 V. It also showed the threshold shift of {approx}0.66 V after pulse programming at +20 V for 1 s with retention > {approx}65 % after 10{sup 4} s. These results demonstrate the feasibility of using colloidal nanoparticles with core-shell structure as gate stacks of the charge storage node and tunneling dielectric for low-temperature and solution-based processed non-volatile memory devices.

  1. Effects of Y incorporation in TaON gate dielectric on electrical performance of GaAs metal-oxide-semiconductor capacitor

    Energy Technology Data Exchange (ETDEWEB)

    Liu, Li Ning; Choi, Hoi Wai; Lai, Pui To [Department of Electrical and Electronic Engineering, The University of Hong Kong (China); Xu, Jing Ping [School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan (China)

    2016-09-15

    In this study, GaAs metal-oxide-semiconductor (MOS) capacitors using Y-incorporated TaON as gate dielectric have been investigated. Experimental results show that the sample with a Y/(Y + Ta) atomic ratio of 27.6% exhibits the best device characteristics: high k value (22.9), low interfacestate density (9.0 x 10{sup 11} cm{sup -2} eV{sup -1}), small flatband voltage (1.05 V), small frequency dispersion and low gate leakage current (1.3 x 10{sup -5}A/cm{sup 2} at V{sub fb} + 1 V). These merits should be attributed to the complementary properties of Y{sub 2}O{sub 3} and Ta{sub 2}O{sub 5}:Y can effectively passivate the large amount of oxygen vacancies in Ta{sub 2}O{sub 5}, while the positively-charged oxygen vacancies in Ta{sub 2}O{sub 5} are capable of neutralizing the effects of the negative oxide charges in Y{sub 2}O{sub 3}. This work demonstrates that an appropriate doping of Y content in TaON gate dielectric can effectively improve the electrical performance for GaAs MOS devices. (copyright 2016 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  2. Comparative study on nitridation and oxidation plasma interface treatment for AlGaN/GaN MIS-HEMTs with AlN gate dielectric

    Science.gov (United States)

    Zhu, Jie-Jie; Ma, Xiao-Hua; Hou, Bin; Chen, Li-Xiang; Zhu, Qing; Hao, Yue

    2017-02-01

    This paper demonstrated the comparative study on interface engineering of AlN/AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistors (MIS-HEMTs) by using plasma interface pre-treatment in various ambient gases. The 15 nm AlN gate dielectric grown by plasma-enhanced atomic layer deposition significantly suppressed the gate leakage current by about two orders of magnitude and increased the peak field-effect mobility by more than 50%. NH3/N2 nitridation plasma treatment (NPT) was used to remove the 3 nm poor-quality interfacial oxide layer and N2O/N2 oxidation plasma treatment (OPT) to improve the quality of interfacial layer, both resulting in improved dielectric/barrier interface quality, positive threshold voltage (V th) shift larger than 0.9 V, and negligible dispersion. In comparison, however, NPT led to further decrease in interface charges by 3.38 × 1012 cm-2 and an extra positive V th shift of 1.3 V. Analysis with fat field-effect transistors showed that NPT resulted in better sub-threshold characteristics and transconductance linearity for MIS-HEMTs compared with OPT. The comparative study suggested that direct removing the poor interfacial oxide layer by nitridation plasma was superior to improving the quality of interfacial layer by oxidation plasma for the interface engineering of GaN-based MIS-HEMTs.

  3. High-Performance Flexible Single-Crystalline Silicon Nanomembrane Thin-Film Transistors with High- k Nb2O5-Bi2O3-MgO Ceramics as Gate Dielectric on a Plastic Substrate.

    Science.gov (United States)

    Qin, Guoxuan; Zhang, Yibo; Lan, Kuibo; Li, Lingxia; Ma, Jianguo; Yu, Shihui

    2018-04-18

    A novel method of fabricating flexible thin-film transistor based on single-crystalline Si nanomembrane (SiNM) with high- k Nb 2 O 5 -Bi 2 O 3 -MgO (BMN) ceramic gate dielectric on a plastic substrate is demonstrated in this paper. SiNMs are successfully transferred to a flexible polyethylene terephthalate substrate, which has been plated with indium-tin-oxide (ITO) conductive layer and high- k BMN ceramic gate dielectric layer by room-temperature magnetron sputtering. The BMN ceramic gate dielectric layer demonstrates as high as ∼109 dielectric constant, with only dozens of pA current leakage. The Si-BMN-ITO heterostructure has only ∼nA leakage current at the applied voltage of 3 V. The transistor is shown to work at a high current on/off ratio of above 10 4 , and the threshold voltage is ∼1.3 V, with over 200 cm 2 /(V s) effective channel electron mobility. Bending tests have been conducted and show that the flexible transistors have good tolerance on mechanical bending strains. These characteristics indicate that the flexible single-crystalline SiNM transistors with BMN ceramics as gate dielectric have great potential for applications in high-performance integrated flexible circuit.

  4. Electrocolorimetry of electrochromic materials on flexible ITO electrodes

    Energy Technology Data Exchange (ETDEWEB)

    Pinheiro, Carlos [Requimte, Dep. Quimica, FCT, Universidade Nova de Lisboa, 2829-516 Caparica (Portugal); YDreams, Madan Parque, Quinta da Torre, 2829-516 Caparica (Portugal); Parola, A.J.; Pina, F. [Requimte, Dep. Quimica, FCT, Universidade Nova de Lisboa, 2829-516 Caparica (Portugal); Fonseca, J.; Freire, C. [Requimte, Dep. Quimica, Faculdade de Ciencias, Universidade do Porto, Rua do Campo Alegre, 4169-007 Porto (Portugal)

    2008-08-15

    Electrochromic materials are characterized by their colour changes upon applied voltage. Colour can mean many things: a certain kind of light, its effect on the human eye, or the result of this effect in the mind of the viewer. Since the electrochromic materials are developed towards real life applications it is relevant to characterize them with the usual commercial colour standards. A colorimetric study of electrogenerated Prussian blue and electrogenerated polymers based on salen-type complexes of Cu(II), Ni(II) and Pd(II) deposited over transparent flexible electrodes of polyethylene terephthalate coated with indium tin oxide (PET/ITO electrodes) was carried out using the CIELAB coordinates. A cuvette with a designed adapter to allow potentiostatic control was placed on an integrating sphere installed in the sample compartment of a spectrophotometer to run the colorimetric measurements. The colour evolution in situ was measured through the transmittance of the films by potentiostatic control. Chronocoulometry/chronoabsorptometry was used to evaluate maximum coloration efficiencies for the coloration step: 184 (Pd), 161 (Cu) and 83 cm{sup 2}/C (Ni) and for bleaching: 199 (Pd), 212 (Cu) and 173 cm{sup 2}/C (Ni) of the Pd, Cu and Ni polymer films, respectively. The Prussian Blue/Prussian White states over the PET/ITO films were relatively reversible while the reversibility and stability of the polymers based on the metals salen-type complexes depends on the metal, Pd being the most stable. (author)

  5. Vacancy-fluorine complexes and their impact on the properties of metal-oxide transistors with high-k gate dielectrics studied using monoenergetic positron beams

    Science.gov (United States)

    Uedono, A.; Inumiya, S.; Matsuki, T.; Aoyama, T.; Nara, Y.; Ishibashi, S.; Ohdaira, T.; Suzuki, R.; Miyazaki, S.; Yamada, K.

    2007-09-01

    Vacancy-fluorine complexes in metal-oxide semiconductors (MOS) with high-k gate dielectrics were studied using a positron annihilation technique. F+ ions were implanted into Si substrates before the deposition of gate dielectrics (HfSiON). The shift of threshold voltage (Vth) in MOS capacitors and an increase in Fermi level position below the HfSiON/Si interface were observed after F+ implantation. Doppler broadening spectra of the annihilation radiation and positron lifetimes were measured before and after HfSiON fabrication processes. From a comparison between Doppler broadening spectra and those obtained by first-principles calculation, the major defect species in Si substrates after annealing treatment (1050 °C, 5 s) was identified as vacancy-fluorine complexes (V3F2). The origin of the Vth shift in the MOS capacitors was attributed to V3F2 located in channel regions.

  6. Paraffin wax passivation layer improvements in electrical characteristics of bottom gate amorphous indium–gallium–zinc oxide thin-film transistors

    International Nuclear Information System (INIS)

    Chang, Geng-Wei; Chang, Ting-Chang; Syu, Yong-En; Tsai, Tsung-Ming; Chang, Kuan-Chang; Tu, Chun-Hao; Jian, Fu-Yen; Hung, Ya-Chi; Tai, Ya-Hsiang

    2011-01-01

    In this research, paraffin wax is employed as the passivation layer of the bottom gate amorphous indium–gallium–zinc oxide thin-film transistors (a-IGZO TFTs), and it is formed by sol–gel process in the atmosphere. The high yield and low cost passivation layer of sol–gel process technology has attracted much attention for current flat-panel-display manufacturing. Comparing with passivation-free a-IGZO TFTs, passivated devices exhibit a superior stability against positive gate bias stress in different ambient gas, demonstrating that paraffin wax shows gas-resisting characteristics for a-IGZO TFTs application. Furthermore, light-induced stretch-out phenomenon for paraffin wax passivated device is suppressed. This superior stability of the passivated device was attributed to the reduced total density of states (DOS) including the interfacial and semiconductor bulk trap densities.

  7. A thermalization energy analysis of the threshold voltage shift in amorphous indium gallium zinc oxide thin film transistors under positive gate bias stress

    Energy Technology Data Exchange (ETDEWEB)

    Niang, K. M.; Flewitt, A. J., E-mail: ajf@eng.cam.ac.uk [Electrical Engineering Division, Cambridge University, J J Thomson Avenue, Cambridge CB3 0FA (United Kingdom); Barquinha, P. M. C.; Martins, R. F. P. [i3N/CENIMAT, Department of Materials Science, Faculty of Science and Technology, Universidade NOVA de Lisboa and CEMOP/UNINOVA, Campus de Caparica, 2829-516 Caparica (Portugal); Cobb, B. [Holst Centre/TNO, High Tech Campus 31, 5656AE Eindhoven (Netherlands); Powell, M. J. [252, Valley Drive, Kendal LA9 7SL (United Kingdom)

    2016-02-29

    Thin film transistors (TFTs) employing an amorphous indium gallium zinc oxide (a-IGZO) channel layer exhibit a positive shift in the threshold voltage under the application of positive gate bias stress (PBS). The time and temperature dependence of the threshold voltage shift was measured and analysed using the thermalization energy concept. The peak energy barrier to defect conversion is extracted to be 0.75 eV and the attempt-to-escape frequency is extracted to be 10{sup 7} s{sup −1}. These values are in remarkable agreement with measurements in a-IGZO TFTs under negative gate bias illumination stress (NBIS) reported recently (Flewitt and Powell, J. Appl. Phys. 115, 134501 (2014)). This suggests that the same physical process is responsible for both PBS and NBIS, and supports the oxygen vacancy defect migration model that the authors have previously proposed.

  8. Bimodal gate-dielectric deposition for improved performance of AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistors

    International Nuclear Information System (INIS)

    Pang Liang; Kim, Kyekyoon

    2012-01-01

    A bimodal deposition scheme combining radiofrequency magnetron sputtering and plasma enhanced chemical vapour deposition (PECVD) is proposed as a means for improving the performance of GaN-based metal-oxide-semiconductor high-electron-mobility transistors (MOSHEMTs). High-density sputtered-SiO 2 is utilized to reduce the gate leakage current and enhance the breakdown voltage while low-density PECVD-SiO 2 is employed to buffer the sputtering damage and further increase the drain current by engineering the stress-induced-polarization. Thus-fabricated MOSHEMT exhibited a low leakage current of 4.21 × 10 -9 A mm -1 and high breakdown voltage of 634 V for a gate-drain distance of 6 µm, demonstrating the promise of bimodal-SiO 2 deposition scheme for the development of GaN-based MOSHEMTs for high-power application. (paper)

  9. Enhancement mode GaN-based multiple-submicron channel array gate-recessed fin metal-oxide-semiconductor high-electron mobility transistors

    Science.gov (United States)

    Lee, Ching-Ting; Wang, Chun-Chi

    2018-04-01

    To study the function of channel width in multiple-submicron channel array, we fabricated the enhancement mode GaN-based gate-recessed fin metal-oxide-semiconductor high-electron mobility transistors (MOS-HEMTs) with a channel width of 450 nm and 195 nm, respectively. In view of the enhanced gate controllability in a narrower fin-channel structure, the transconductance was improved from 115 mS/mm to 151 mS/mm, the unit gain cutoff frequency was improved from 6.2 GHz to 6.8 GHz, and the maximum oscillation frequency was improved from 12.1 GHz to 13.1 GHz of the devices with a channel width of 195 nm, compared with the devices with a channel width of 450 nm.

  10. Effect of gate dielectrics on the performance of p-type Cu2O TFTs processed at room temperature

    KAUST Repository

    Al-Jawhari, Hala A.

    2013-12-01

    Single-phase Cu2O films with p-type semiconducting properties were successfully deposited by reactive DC magnetron sputtering at room temperature followed by post annealing process at 200°C. Subsequently, such films were used to fabricate bottom gate p-channel Cu2O thin film transistors (TFTs). The effect of using high-κ SrTiO3 (STO) as a gate dielectric on the Cu2O TFT performance was investigated. The results were then compared to our baseline process which uses a 220 nm aluminum titanium oxide (ATO) dielectric deposited on a glass substrate coated with a 200 nm indium tin oxide (ITO) gate electrode. We found that with a 150 nm thick STO, the Cu2O TFTs exhibited a p-type behavior with a field-effect mobility of 0.54 cm2.V-1.s-1, an on/off ratio of around 44, threshold voltage equaling -0.62 V and a sub threshold swing of 1.64 V/dec. These values were obtained at a low operating voltage of -2V. The advantages of using STO as a gate dielectric relative to ATO are discussed. © (2014) Trans Tech Publications, Switzerland.

  11. Characterization of a new transparent-conducting material of ZnO doped ITO thin films

    Science.gov (United States)

    Ali, H. M.

    2005-11-01

    Thin films of indium tin oxide (ITO) doped with zinc oxide have the remarkable properties of being conductive yet still highly transparent in the visible and near-IR spectral ranges. The Electron beam deposi- tion technique is one of the simplest and least expensive ways of preparing. High-quality ITO thin films have been deposited on glass substrates by Electron beam evaporation technique. The effect of doping and substrate deposition temperature was found to have a significant effect on the structure, electrical and optical properties of ZnO doped ITO films. The average optical transmittance has been increased with in- creasing the substrate temperature. The maximum value of transmittance is greater than 84% in the visible region and 85% in the NIR region obtained for film with Zn/ITO = 0.13 at substrate temperature 200 °C. The dielectric constant, average excitation energy for electronic transitions (E o), the dispersion energy (E d), the long wavelength refractive index (n ), average oscillator wave length ( o) and oscillator strength S o for the thin films were determined and presented in this work.

  12. Influence of illumination and decay of electrical resistance of ITO nanoscale layers

    Energy Technology Data Exchange (ETDEWEB)

    Somogyi, K. [MicroVacuum Ltd., Kerekgyarto u.: 10, H-1147 Budapest (Hungary)], E-mail: karoly.somogyi@microvacuum.com; Erdelyi, K.; Szendro, I. [MicroVacuum Ltd., Kerekgyarto u.: 10, H-1147 Budapest (Hungary)

    2008-09-30

    Indium tin oxide (ITO) is known as a transparent oxide with n-type electrical conductivity. However, the as grown ITO layers have high resistivity and the transparency is also limited. In this work, thin ITO layers were deposited by evaporation and then underwent a post-growth annealing. Annealing leads to a low electrical resistivity and to an enhanced transparency. Annealed samples show n-type conductivity. In this work, ITO layers of typically 10 nm thicknesses were deposited onto Si{sub 1-x}Ti{sub x}O{sub 2} covered glass substrates and then annealed. First the conductivity was evaluated after the annealing. The rough, quick estimation was performed by simple two point direct resistance measurement, and then van der Pauw configuration and collinear four-point probe method were applied. The light sensitivity and storage time dependent stability were studied. It is demonstrated that the resistance decreases due to illumination, though only in a small extent. The measure and speed of the decrease depend on the wavelength of the light and the process is very slow (up to hours). The recovery of the starting resistance is also a slow process.

  13. Gamma-ray irradiation and post-irradiation at room and elevated temperature response of pMOS dosimeters with thick gate oxides

    Directory of Open Access Journals (Sweden)

    Pejović Momčilo M.

    2011-01-01

    Full Text Available Gamma-ray irradiation and post-irradiation response at room and elevated temperature have been studied for radiation sensitive pMOS transistors with gate oxide thickness of 100 and 400 nm, respectively. Their response was followed based on the changes in the threshold voltage shift which was estimated on the basis of transfer characteristics in saturation. The presence of radiation-induced fixed oxide traps and switching traps - which lead to a change in the threshold voltage - was estimated from the sub-threshold I-V curves, using the midgap technique. It was shown that fixed oxide traps have a dominant influence on the change in the threshold voltage shift during gamma-ray irradiation and annealing.

  14. Investigation of ITO layers for application as transparent contacts in flexible photovoltaic cell structures

    Science.gov (United States)

    Znajdek, Katarzyna; Sibiński, Maciej

    2013-07-01

    In this paper authors present the mechanical, optical and electrical parameters of Indium Tin Oxide (ITO) Transparent Conductive Layers (TCL) deposited on flexible substrate. Layers' properties are analyzed and verified. Investigated Transparent Conductive Oxide (TCO) was deposited, using magnetron sputtering method. Flexible polymer PET (polyethylene terephthalate) foil was used as a substrate, in order to photovoltaic (PV) cell's emitter contact application of investigated material. ITO-coated PET foils have been dynamically bent on numerous cylinders of various diameters according to the standard requirements. Resistance changes for each measured sample were measured and recorded during bending cycle. Thermal durability, as well as temperature influence on resistance and optical transmission are verified. Presented results were conducted to verify practical suitability and to evaluate possible applications of Indium Tin Oxide as a front contact in flexible photovoltaic cell structures.

  15. Trap state passivation improved hot-carrier instability by zirconium-doping in hafnium oxide in a nanoscale n-metal-oxide semiconductor-field effect transistors with high-k/metal gate

    International Nuclear Information System (INIS)

    Liu, Hsi-Wen; Tsai, Jyun-Yu; Liu, Kuan-Ju; Lu, Ying-Hsin; Chang, Ting-Chang; Chen, Ching-En; Tseng, Tseung-Yuen; Lin, Chien-Yu; Cheng, Osbert; Huang, Cheng-Tung; Ye, Yi-Han

    2016-01-01

    This work investigates the effect on hot carrier degradation (HCD) of doping zirconium into the hafnium oxide high-k layer in the nanoscale high-k/metal gate n-channel metal-oxide-semiconductor field-effect-transistors. Previous n-metal-oxide semiconductor-field effect transistor studies demonstrated that zirconium-doped hafnium oxide reduces charge trapping and improves positive bias temperature instability. In this work, a clear reduction in HCD is observed with zirconium-doped hafnium oxide because channel hot electron (CHE) trapping in pre-existing high-k bulk defects is the main degradation mechanism. However, this reduced HCD became ineffective at ultra-low temperature, since CHE traps in the deeper bulk defects at ultra-low temperature, while zirconium-doping only passivates shallow bulk defects.

  16. Physical and electrical properties of thermal oxidized Sm{sub 2}O{sub 3} gate oxide thin film on Si substrate: Influence of oxidation durations

    Energy Technology Data Exchange (ETDEWEB)

    Goh, Kian Heng; Haseeb, A.S.M.A.; Wong, Yew Hoong, E-mail: yhwong@um.edu.my

    2016-05-01

    Growth of 150 nm Sm{sub 2}O{sub 3} films by sputtered pure samarium metal film on silicon substrates and followed by thermal oxidation process in oxygen ambient at 700 °C through various oxidation durations (5 min, 10 min, 15 min and 20 min) has been carried out. The crystallinity of Sm{sub 2}O{sub 3} film and existence of interfacial layer have been evaluated by X-ray diffraction, Fourier transform infrared and Raman analysis. Crystallite size and microstrain of Sm{sub 2}O{sub 3} were estimated by Williamson–Hall plot analysis. Calculated crystallite size of Sm{sub 2}O{sub 3} from Scherrer equation has similar trend with the value from Williamson–Hall plot. The presence of interfacial layer is supported by composition line scan by energy dispersive X-ray spectroscopy analysis. The surface roughness and surface topography of Sm{sub 2}O{sub 3} film were examined by atomic force microscopy analysis. The electrical characterization revealed that 15 min of oxidation durations with smoothest surface has highest breakdown voltage, lowest leakage current density and highest barrier height value. - Highlights: • Thermal oxidation of sputtered pure metallic Sm in oxygen ambient • Formation of polycrystalline Sm{sub 2}O{sub 3} and semi-polycrystalline interfacial layers • Optimization of oxidation duration of pure metallic Sm in oxygen ambient • Enhanced electrical performance with smooth surface and increased barrier height.

  17. Low temperature and self catalytic growth of ultrafine ITO nanowires by electron beam evaporation method and their optical and electrical properties

    International Nuclear Information System (INIS)

    Kumar, R. Rakesh; Rao, K. Narasimha; Rajanna, K.; Phani, A.R.

    2014-01-01

    Highlights: • ITO nanowires were grown by e-beam evaporation method. • ITO nanowires growth done at low substrate temperature of 350 °C. • Nanowires growth was carried out without use of catalyst and reactive oxygen gas. • Nanowires growth proceeds via self catalytic VLS growth. • Grown nanowires have diameter 10–20 nm and length 1–4 μm long. • ITO nanowire films have shown good antireflection property. - Abstract: We report the self catalytic growth of Sn-doped indium oxide (ITO) nanowires (NWs) over a large area glass and silicon substrates by electron beam evaporation method at low substrate temperatures of 250–400 °C. The ITO NWs growth was carried out without using an additional reactive oxygen gas and a metal catalyst particle. Ultrafine diameter (∼10–15 nm) and micron long ITO NWs growth was observed in a temperature window of 300–400 °C. Transmission electron microscope studies confirmed single crystalline nature of the NWs and energy dispersive spectroscopy studies on the NWs confirmed that the NWs growth proceeds via self catalytic vapor-liquid-solid (VLS) growth mechanism. ITO nanowire films grown on glass substrates at a substrate temperature of 300–400 °C have shown ∼2–6% reflection and ∼70–85% transmission in the visible region. Effect of deposition parameters was systematically investigated. The large area growth of ITO nanowire films would find potential applications in the optoelectronic devices

  18. Fabrication of highly conductive graphene/ITO transparent bi-film through CVD and organic additives-free sol-gel techniques.

    Science.gov (United States)

    Hemasiri, Bastian Waduge Naveen Harindu; Kim, Jae-Kwan; Lee, Ji-Myon

    2017-12-19

    Indium tin oxide (ITO) still remains as the main candidate for high-performance optoelectronic devices, but there is a vital requirement in the development of sol-gel based synthesizing techniques with regards to green environment and higher conductivity. Graphene/ITO transparent bi-film was synthesized by a two-step process: 10 wt. % tin-doped ITO thin films were produced by an environmentally friendly aqueous sol-gel spin coating technique with economical salts of In(NO 3 ) 3 .H 2 O and SnCl 4 , without using organic additives, on surface free energy enhanced (from 53.826 to 97.698 mJm -2 ) glass substrate by oxygen plasma treatment, which facilitated void-free continuous ITO film due to high surface wetting. The chemical vapor deposited monolayer graphene was transferred onto the synthesized ITO to enhance its electrical properties and it was capable of reducing sheet resistance over 12% while preserving the bi-film surface smoother. The ITO films contain the In 2 O 3 phase only and exhibit the polycrystalline nature of cubic structure with 14.35 ± 0.5 nm crystallite size. The graphene/ITO bi-film exhibits reproducible optical transparency with 88.66% transmittance at 550 nm wavelength, and electrical conductivity with sheet resistance of 117 Ω/sq which is much lower than that of individual sol-gel derived ITO film.

  19. Optical second harmonic generation phase measurement at interfaces of some organic layers with indium tin oxide

    Science.gov (United States)

    Ngah Demon, Siti Zulaikha; Miyauchi, Yoshihiro; Mizutani, Goro; Matsushima, Toshinori; Murata, Hideyuki

    2014-08-01

    We observed phase shift in optical second harmonic generation (SHG) from interfaces of indium tin oxide (ITO)/copper phthalocyanine (CuPc) and ITO/pentacene. Phase correction due to Fresnel factors of the sample was taken into account. The phase of SHG electric field at the ITO/pentacene interface, ϕinterface with respect to the phase of SHG of bare substrate ITO was 160°, while the interface of ITO/CuPc had a phase of 140°.

  20. Optical second harmonic generation phase measurement at interfaces of some organic layers with indium tin oxide

    OpenAIRE

    Ngah Demon, Siti Zulaikha; Miyauchi, Yoshihiro; Mizutani, Goro; Matsushima, Toshinori; Murata, Hideyuki

    2014-01-01

    We observed phase shift in optical second harmonic generation (SHG) from interfaces of indium tin oxide (ITO)/copper phthalocyanine (CuPc) and ITO/pentacene. Phase correction due to Fresnel factors of the sample was taken into account. The phase of SHG electric field at the ITO/pentacene interface, ϕ_ with respect to the phase of SHG of bare substrate ITO was 160°, while the interface of ITO/CuPc had a phase of 140°.

  1. Optical and electrical properties of transparent conductive ITO thin films under proton radiation with 100 keV

    International Nuclear Information System (INIS)

    Wei, Q.; He, S.Y.; Yang, D.Z.; Liu, J.C.

    2005-01-01

    Under the simulation environment for the vacuum and heat sink in space, the changes in optical and electrical properties of transparent conductive indium tin oxide (ITO) thin films induced by radiation of protons with 100 keV were studied. The ITO thin films were deposited on JGS1 quartz substrate by a sol-gel method. The sheet resistance and transmittance spectra of the ITO thin films were measured using the four-point probe method and a spectrophotometer, respectively. The surface morphology was analyzed by AFM. The experimental results showed that the electrical and optical performances of the ITO thin films were closely related to the irradiation fluence. When the fluence exceeded a given value 2 x 10 16 cm -2 , the sheet resistance increased obviously and the optical transmittance decreased. The AFM analysis indicated that the grain size of the ITO thin films diminished. The studies about the radiation effect on ITO thin films will help to predict performance evolution of the second surface mirrors on satellites under space radiation environment. (orig.)

  2. Broadband perfect infrared absorption by tuning epsilon-near-zero and epsilon-near-pole resonances of multilayer ITO nanowires.

    Science.gov (United States)

    Zhou, Kun; Cheng, Qiang; Song, Jinlin; Lu, Lu; Jia, Zhihao; Li, Junwei

    2018-01-01

    We numerically investigate the broadband perfect infrared absorption by tuning epsilon-near-zero (ENZ) and epsilon-near-pole (ENP) resonances of multilayer indium tin oxide nanowires (ITO NWs). The monolayer ITO NWs array shows intensive absorption at ENZ and ENP wavelengths for p polarization, while only at the ENP wavelength for s polarization. Moreover, the ENP resonances are almost omnidirectional and the ENZ resonances are angularly dependent. Therefore, the absorption bandwidth is broader for p polarization than that for s polarization when polarized waves are incident obliquely. The ENZ resonances can be tuned by altering the doping concentration and volume filling factor of ITO NWs. However, the ENP resonances only can be tuned by changing the doping concentration of ITO NWs, and volume filling factor impacts little on the ENP resonances. Based on the strong absorption properties of each layer at their own ENP and ENZ resonances, the tuned absorption of the bilayer ITO NWs with the different doping concentrations can be broader and stronger. Furthermore, multilayer ITO NWs can achieve broadband perfect absorption by controlling the doping concentration, volume filling factor, and length of the NWs in each layer. This study has the potential to apply to applications requiring efficient absorption and energy conversion.

  3. Mechanical Properties of ZTO, ITO, and a-Si:H Multilayer Films for Flexible Thin Film Solar Cells.

    Science.gov (United States)

    Hengst, Claudia; Menzel, Siegfried B; Rane, Gayatri K; Smirnov, Vladimir; Wilken, Karen; Leszczynska, Barbara; Fischer, Dustin; Prager, Nicole

    2017-03-01

    The behavior of bi- and trilayer coating systems for flexible a-Si:H based solar cells consisting of a barrier, an electrode, and an absorption layer is studied under mechanical load. First, the film morphology, stress, Young's modulus, and crack onset strain (COS) were analyzed for single film coatings of various thickness on polyethylene terephthalate (PET) substrates. In order to demonstrate the role of the microstructure of a single film on the mechanical behavior of the whole multilayer coating, two sets of InSnOx (indium tin oxide, ITO) conductive coatings were prepared. Whereas a characteristic grain-subgrain structure was observed in ITO-1 films, grain growth was suppressed in ITO-2 films. ITO-1 bilayer coatings showed two-step failure under tensile load with cracks propagating along the ITO-1/a-Si:H-interface, whereas channeling cracks in comparable bi- and trilayers based on amorphous ITO-2 run through all constituent layers. A two-step failure is preferable from an application point of view, as it may lead to only a degradation of the performance instead of the ultimate failure of the device. Hence, the results demonstrate the importance of a fine-tuning of film microstructure not only for excellent electrical properties, but also for a high mechanical performance of flexible devices (e.g., a-Si:H based solar cells) during fabrication in a roll-to-roll process or under service.

  4. ZnS nanoparticles electrodeposited onto ITO electrode as a platform for fabrication of enzyme-based biosensors of glucose

    International Nuclear Information System (INIS)

    Du, Jian; Yu, Xiuping; Wu, Ying; Di, Junwei

    2013-01-01

    The electrochemical and photoelectrochemical biosensors based on glucose oxidase (GOD) and ZnS nanoparticles modified indium tin oxide (ITO) electrode were investigated. The ZnS nanoparticles were electrodeposited directly on the surface of ITO electrode. The enzyme was immobilized on ZnS/ITO electrode surface by sol–gel method to fabricate glucose biosensor. GOD could electrocatalyze the reduction of dissolved oxygen, which resulted in a great increase of the reduction peak current. The reduction peak current decreased linearly with the addition of glucose, which could be used for glucose detection. Moreover, ZnS nanoparticles deposited on ITO electrode surface showed good photocurrent response under illumination. A photoelectrochemical biosensor for the detection of glucose was also developed by monitoring the decreases in the cathodic peak photocurrent. The results indicated that ZnS nanoparticles deposited on ITO substrate were a good candidate material for the immobilization of enzyme in glucose biosensor construction. - Highlights: ► ZnS nanoparticles were electrodeposited directly on ITO surface. ► The direct electron transfer of GOD immobilized on ZnS surface was obtained. ► The enzyme electrode was used to the determination of glucose in the presence of oxygen. ► The response of photoelectrochemical biosensor towards glucose was more sensitive

  5. ZnS nanoparticles electrodeposited onto ITO electrode as a platform for fabrication of enzyme-based biosensors of glucose

    Energy Technology Data Exchange (ETDEWEB)

    Du, Jian; Yu, Xiuping; Wu, Ying; Di, Junwei, E-mail: djw@suda.edu.cn

    2013-05-01

    The electrochemical and photoelectrochemical biosensors based on glucose oxidase (GOD) and ZnS nanoparticles modified indium tin oxide (ITO) electrode were investigated. The ZnS nanoparticles were electrodeposited directly on the surface of ITO electrode. The enzyme was immobilized on ZnS/ITO electrode surface by sol–gel method to fabricate glucose biosensor. GOD could electrocatalyze the reduction of dissolved oxygen, which resulted in a great increase of the reduction peak current. The reduction peak current decreased linearly with the addition of glucose, which could be used for glucose detection. Moreover, ZnS nanoparticles deposited on ITO electrode surface showed good photocurrent response under illumination. A photoelectrochemical biosensor for the detection of glucose was also developed by monitoring the decreases in the cathodic peak photocurrent. The results indicated that ZnS nanoparticles deposited on ITO substrate were a good candidate material for the immobilization of enzyme in glucose biosensor construction. - Highlights: ► ZnS nanoparticles were electrodeposited directly on ITO surface. ► The direct electron transfer of GOD immobilized on ZnS surface was obtained. ► The enzyme electrode was used to the determination of glucose in the presence of oxygen. ► The response of photoelectrochemical biosensor towards glucose was more sensitive.

  6. Mechanical Properties of ZTO, ITO, and a-Si:H Multilayer Films for Flexible Thin Film Solar Cells

    Directory of Open Access Journals (Sweden)

    Claudia Hengst

    2017-03-01

    Full Text Available The behavior of bi- and trilayer coating systems for flexible a-Si:H based solar cells consisting of a barrier, an electrode, and an absorption layer is studied under mechanical load. First, the film morphology, stress, Young’s modulus, and crack onset strain (COS were analyzed for single film coatings of various thickness on polyethylene terephthalate (PET substrates. In order to demonstrate the role of the microstructure of a single film on the mechanical behavior of the whole multilayer coating, two sets of InSnOx (indium tin oxide, ITO conductive coatings were prepared. Whereas a characteristic grain–subgrain structure was observed in ITO-1 films, grain growth was suppressed in ITO-2 films. ITO-1 bilayer coatings showed two-step failure under tensile load with cracks propagating along the ITO-1/a-Si:H-interface, whereas channeling cracks in comparable bi- and trilayers based on amorphous ITO-2 run through all constituent layers. A two-step failure is preferable from an application point of view, as it may lead to only a degradation of the performance instead of the ultimate failure of the device. Hence, the results demonstrate the importance of a fine-tuning of film microstructure not only for excellent electrical properties, but also for a high mechanical performance of flexible devices (e.g., a-Si:H based solar cells during fabrication in a roll-to-roll process or under service.

  7. Highly transparent ITO thin films on photosensitive glass: sol-gel synthesis, structure, morphology and optical properties

    Energy Technology Data Exchange (ETDEWEB)

    Koroesi, Laszlo; Papp, Szilvia; Dekany, Imre [University of Szeged, Supramolecular and Nanostructured Materials Research Group of the Hungarian Academy of Sciences, Szeged (Hungary); Beke, Szabolcs [Italian Institute of Technology, Department of Nanophysics, Genova (Italy); Pecz, Bela; Horvath, Robert; Petrik, Peter; Agocs, Emil [Research Institute for Technical Physics and Materials Science, Budapest (Hungary)

    2012-05-15

    Conductive and highly transparent indium tin oxide (ITO) thin films were prepared on photosensitive glass substrates by the combination of sol-gel and spin-coating techniques. First, the substrates were coated with amorphous Sn-doped indium hydroxide, and these amorphous films were then calcined at 550 {sup circle} C to produce crystalline and electrically conductive ITO layers. The resulting thin films were characterized by means of scanning electron microscopy, UV-Vis spectroscopy, X-ray photoelectron spectroscopy and spectroscopic ellipsometry. The measurements revealed that the ITO films were composed of spherical crystallites around 20 nm in size with mainly cubic crystal structure. The ITO films acted as antireflection coatings increasing the transparency of the coated substrates compared to that of the bare supports. The developed ITO films with a thickness of {proportional_to}170-330 nm were highly transparent in the visible spectrum with sheet resistances of 4.0-13.7 k{omega}/sq. By coating photosensitive glass with ITO films, our results open up new perspectives in micro- and nano-technology, for example in fabricating conductive and highly transparent 3D microreactors. (orig.)

  8. HYPOMELANOSIS OF ITO: A CASE REPORT

    Science.gov (United States)

    Gupta, Monisha; Gupta, Vinay

    2002-01-01

    A twelve year old female child presented with learning disability. Detailed physical examination revealed anomalies involving the nervous and musculoskeletal system. In addition she had linear and whorled. hypopigmented lesions along the lines of Blaschko distributed over the upper limb, trunk and face on the left side of the body. She fulfilled the diagnostic criteria for Hypomelanosis of Ito, even in the absence of chromosomal studies and advanced histopathological studies. PMID:21206591

  9. Electrical analysis of high dielectric constant insulator and metal gate metal oxide semiconductor capacitors on flexible bulk mono-crystalline silicon

    KAUST Repository

    Ghoneim, Mohamed T.

    2015-06-01

    We report on the electrical study of high dielectric constant insulator and metal gate metal oxide semiconductor capacitors (MOSCAPs) on a flexible ultra-thin (25 μm) silicon fabric which is peeled off using a CMOS compatible process from a standard bulk mono-crystalline silicon substrate. A lifetime projection is extracted using statistical analysis of the ramping voltage (Vramp) breakdown and time dependent dielectric breakdown data. The obtained flexible MOSCAPs operational voltages satisfying the 10 years lifetime benchmark are compared to those of the control MOSCAPs, which are not peeled off from the silicon wafer. © 2014 IEEE.

  10. Femtosecond all-optical parallel logic gates based on tunable saturable to reverse saturable absorption in graphene-oxide thin films

    International Nuclear Information System (INIS)

    Roy, Sukhdev; Yadav, Chandresh

    2013-01-01

    A detailed theoretical analysis of ultrafast transition from saturable absorption (SA) to reverse saturable absorption (RSA) has been presented in graphene-oxide thin films with femtosecond laser pulses at 800 nm. Increase in pulse intensity leads to switching from SA to RSA with increased contrast due to two-photon absorption induced excited-state absorption. Theoretical results are in good agreement with reported experimental results. Interestingly, it is also shown that increase in concentration results in RSA to SA transition. The switching has been optimized to design parallel all-optical femtosecond NOT, AND, OR, XOR, and the universal NAND and NOR logic gates

  11. ITO thin films deposited by advanced pulsed laser deposition

    International Nuclear Information System (INIS)

    Viespe, Cristian; Nicolae, Ionut; Sima, Cornelia; Grigoriu, Constantin; Medianu, Rares

    2007-01-01

    Indium tin oxide thin films were deposited by computer assisted advanced PLD method in order to obtain transparent, conductive and homogeneous films on a large area. The films were deposited on glass substrates. We studied the influence of the temperature (room temperature (RT)-180 deg. C), pressure (1-6 x 10 -2 Torr), laser fluence (1-4 J/cm 2 ) and wavelength (266-355 nm) on the film properties. The deposition rate, roughness, film structure, optical transmission, electrical conductivity measurements were done. We deposited uniform ITO thin films (thickness 100-600 nm, roughness 5-10 nm) between RT and 180 deg. C on a large area (5 x 5 cm 2 ). The films have electrical resistivity of 8 x 10 -4 Ω cm at RT, 5 x 10 -4 Ω cm at 180 deg. C and an optical transmission in the visible range, around 89%

  12. Decrease in effective electron mobility in the channel of a metal-oxide-semiconductor transistor as the gate length is decreased

    International Nuclear Information System (INIS)

    Frantsuzov, A. A.; Boyarkina, N. I.; Popov, V. P.

    2008-01-01

    Effective electron mobility μ eff in channels of metal-oxide-semiconductor transistors with a gate length L in the range of 3.8 to 0.34 μm was measured; the transistors were formed on wafers of the silicon-oninsulator type. It was found that μ eff decreases as L is decreased. It is shown that this decrease can be accounted for by the effect of series resistances of the source and drain only if it is assumed that there is a rapid increase in these resistances as the gate voltage is decreased. This assumption is difficult to substantiate. A more realistic model is suggested; this model accounts for the observed decrease in μ eff as L is decreased. The model implies that zones with a mobility lower than that in the middle part of the channel originate at the edges of the gate. An analysis shows that, in this case, the plot of the dependence of 1/μ eff on 1/L should be linear, which is exactly what is observed experimentally. The use of this plot makes it possible to determine both the electron mobility μ 0 in the middle part of the channel and the quantity A that characterizes the zones with lowered mobility at the gate’s edges.

  13. Comparison of gated and non-gated detectors for double-pulse laser induced plasma analysis of trace elements in iron oxide

    International Nuclear Information System (INIS)

    Heilbrunner, H.; Huber, N.; Wolfmeir, H.; Arenholz, E.; Pedarnig, J.D.; Heitz, J.

    2012-01-01

    Double-pulse laser-induced breakdown spectroscopy (LIBS) is an emerging technique for accurate compositional analysis of many different materials. We present results of collinear double-pulse LIBS for analysis of the trace elements aluminum, phosphorus and boron in sintered iron oxide targets. The samples were ablated in air by double-pulse Nd:YAG laser radiation (6 ns pulse duration, laser wavelength of 532 nm) and spectra were recorded with an Echelle spectrometer equipped either with a CCD (charge coupled device) or an ICCD (intensified charge coupled device) camera. For the trace elements aluminum and phosphorus, the use of the CCD detector system resulted in considerable higher signal-to-noise ratios and/or better limits of detection compared to the results achieved with the ICCD detector. The use of CCD double-pulse LIBS enables to detect low concentrations of phosphorus with a limit of detection of 10 ppm by evaluating the UV line at 214.91 nm, which overlaps with a Fe I line. Compared to the ICCD system, the CCD system requires the accumulation of a higher number of laser double-pulses to achieve acceptable signal quality. This can be disadvantageous for elements showing pronounced depletion effects as for the trace element boron in sintered iron oxide targets. - Highlights: ► Direct comparison of double-pulse LIBS analysis using CCD and ICCD detectors ► Double-pulse LIBS technique for monitoring of trace elements in iron oxide ► CCD detector can result in better signal-to-noise ratios and limits of detection. ► Low P concentrations detectable by CCD double-pulse LIBS of the line at 214.91 nm ► CCD system disadvantageous for elements showing pronounced depletion effects

  14. Interface Trap Profiles in 4H- and 6H-SiC MOS Capacitors with Nitrogen- and Phosphorus-Doped Gate Oxides

    Science.gov (United States)

    Jiao, C.; Ahyi, A. C.; Dhar, S.; Morisette, D.; Myers-Ward, R.

    2017-04-01

    We report results on the interface trap density ( D it) of 4H- and 6H-SiC metal-oxide-semiconductor (MOS) capacitors with different interface chemistries. In addition to pure dry oxidation, we studied interfaces formed by annealing thermal oxides in NO or POCl3. The D it profiles, determined by the C- ψ s method, show that, although the as-oxidized 4H-SiC/SiO2 interface has a much higher D it profile than 6H-SiC/SiO2, after postoxidation annealing (POA), both polytypes maintain comparable D it near the conduction band edge for the gate oxides incorporated with nitrogen or phosphorus. Unlike most conventional C- V- or G- ω-based methods, the C- ψ s method is not limited by the maximum probe frequency, therefore taking into account the "fast traps" detected in previous work on 4H-SiC. The results indicate that such fast traps exist near the band edge of 6H-SiC also. For both polytypes, we show that the total interface trap density ( N it) integrated from the C- ψ s method is several times that obtained from the high-low method. The results suggest that the detected fast traps have a detrimental effect on electron transport in metal-oxide-semiconductor field-effect transistor (MOSFET) channels.

  15. Highly transparent conductive ITO/Ag/ITO trilayer films deposited by RF sputtering at room temperature

    Directory of Open Access Journals (Sweden)

    Ningyu Ren

    2017-05-01

    Full Text Available ITO/Ag/ITO (IAI trilayer films were deposited on glass substrate by radio frequency magnetron sputtering at room temperature. A high optical transmittance over 94.25% at the wavelength of 550 nm and an average transmittance over the visual region of 88.04% were achieved. The calculated value of figure of merit (FOM reaches 80.9 10-3 Ω-1 for IAI films with 15-nm-thick Ag interlayer. From the morphology and structural characterization, IAI films could show an excellent correlated electric and optical performance if Ag grains interconnect with each other on the bottom ITO layer. These results indicate that IAI trilayer films, which also exhibit low surface roughness, will be well used in optoelectronic devices.

  16. ITO-MgF2 Film Development for PowerSphere Polymer Surface Protection

    Science.gov (United States)

    Hambourger, Paul D.; Kerslake, Thomas W.; Waters, Deborah L.

    2004-01-01

    Multi-kilogram class microsatellites with a PowerSphere electric power system are attractive for fulfilling a variety of potential NASA missions. However, PowerSphere polymer surfaces must be coated with a film that has suitable electrical sheet resistivity for electrostatic discharge control, be resistant to atomic oxygen attack, be transparent to ultraviolet light for composite structure curing and resist ultraviolet light induced darkening for efficient photovoltaic cell operation. In addition, the film must be tolerant of polymer layer folding associated with launch stowage of PowerSphere inflatable structures. An excellent film material candidate to meet these requirements is co-sputtered, indium oxide (In2O3) - tin oxide (SnO2), known as 'ITO', and magnesium fluoride (MgF2). While basic ITO-MgF2 film properties have been the subject of research over the last decade, further research is required in the areas of film durability for space-inflatable applications and precise film property control for large scale commercial production. In this paper, the authors present film durability results for a folded polymer substrate and film resistance to vacuum UV darkening. The authors discuss methods and results in the area of film sheet resistivity measurement and active control, particularly dual-channel, plasma emission line measurement of ITO and MgF2 plasma sources. ITO-MgF2 film polymer coupon preparation is described as well as film deposition equipment, procedures and film characterization. Durability testing methods are also described. The pre- and post-test condition of the films is assessed microscopically and electrically. Results show that an approx. 500A ITO-18vol% MgF2 film is a promising candidate to protect PowerSphere polymer surfaces for Earth orbit missions. Preliminary data also indicate that in situ film measurement methods are promising for active film resistivity control in future large scale production. Future film research plans are also

  17. Linear gate

    International Nuclear Information System (INIS)

    Suwono.

    1978-01-01

    A linear gate providing a variable gate duration from 0,40μsec to 4μsec was developed. The electronic circuity consists of a linear circuit and an enable circuit. The input signal can be either unipolar or bipolar. If the input signal is bipolar, the negative portion will be filtered. The operation of the linear gate is controlled by the application of a positive enable pulse. (author)

  18. Effect of sputtering parameters on optical and electrical properties of ITO films on PET substrates

    International Nuclear Information System (INIS)

    Tseng, Kun-San; Lo, Yu-Lung

    2013-01-01

    The optical and electrical properties of indium tin oxide (ITO) thin films deposited on flexible polyethylene terephthalate (PET) substrates using a DC magnetron sputtering technique are investigated as a function of the deposition time, the argon flow rate and the target–substrate distance. It is found that all of the ITO films contain a high fraction of amorphous phase. The volume fraction of crystallite precipitates in the amorphous host increases with an increasing deposition time or a reducing argon flow rate. The deposition time and argon flow rate have higher effects on the optical transparency of the ITO films than the target–substrate distance has. Increasing film thickness is not the only reason for the transmittance reduced. It is found that an increase of the extinction coefficient by increasing deposition time or an increase of the refractive index by decreasing argon flow rate also reduces the transmittance of thin film. For a constant deposition time, the resistivity of the ITO films reduces with a reducing argon flow rate or a reducing target–substrate distance. For a constant argon flow rate, a critical value of the deposition time exists at which both the resistivity and the effect of the target–substrate distance are minimized. Finally, it is concluded that the film resistivity has low sensitivity to the target–substrate distance if the best deposition conditions which mostly attain the lowest resistivity are matched.

  19. Effect of sputtering parameters on optical and electrical properties of ITO films on PET substrates

    Science.gov (United States)

    Tseng, Kun-San; Lo, Yu-Lung

    2013-11-01

    The optical and electrical properties of indium tin oxide (ITO) thin films deposited on flexible polyethylene terephthalate (PET) substrates using a DC magnetron sputtering technique are investigated as a function of the deposition time, the argon flow rate and the target-substrate distance. It is found that all of the ITO films contain a high fraction of amorphous phase. The volume fraction of crystallite precipitates in the amorphous host increases with an increasing deposition time or a reducing argon flow rate. The deposition time and argon flow rate have higher effects on the optical transparency of the ITO films than the target-substrate distance has. Increasing film thickness is not the only reason for the transmittance reduced. It is found that an increase of the extinction coefficient by increasing deposition time or an increase of the refractive index by decreasing argon flow rate also reduces the transmittance of thin film. For a constant deposition time, the resistivity of the ITO films reduces with a reducing argon flow rate or a reducing target-substrate distance. For a constant argon flow rate, a critical value of the deposition time exists at which both the resistivity and the effect of the target-substrate distance are minimized. Finally, it is concluded that the film resistivity has low sensitivity to the target-substrate distance if the best deposition conditions which mostly attain the lowest resistivity are matched.

  20. Effect of sputtering parameters on optical and electrical properties of ITO films on PET substrates

    Energy Technology Data Exchange (ETDEWEB)

    Tseng, Kun-San [Department of Mechanical Engineering, National Cheng Kung University, Tainan, Taiwan (China); Lo, Yu-Lung, E-mail: loyl@mail.ncku.edu.tw [Department of Mechanical Engineering, National Cheng Kung University, Tainan, Taiwan (China); Advanced Optoelectronic Technology Center, National Cheng Kung University, Tainan, Taiwan (China)

    2013-11-15

    The optical and electrical properties of indium tin oxide (ITO) thin films deposited on flexible polyethylene terephthalate (PET) substrates using a DC magnetron sputtering technique are investigated as a function of the deposition time, the argon flow rate and the target–substrate distance. It is found that all of the ITO films contain a high fraction of amorphous phase. The volume fraction of crystallite precipitates in the amorphous host increases with an increasing deposition time or a reducing argon flow rate. The deposition time and argon flow rate have higher effects on the optical transparency of the ITO films than the target–substrate distance has. Increasing film thickness is not the only reason for the transmittance reduced. It is found that an increase of the extinction coefficient by increasing deposition time or an increase of the refractive index by decreasing argon flow rate also reduces the transmittance of thin film. For a constant deposition time, the resistivity of the ITO films reduces with a reducing argon flow rate or a reducing target–substrate distance. For a constant argon flow rate, a critical value of the deposition time exists at which both the resistivity and the effect of the target–substrate distance are minimized. Finally, it is concluded that the film resistivity has low sensitivity to the target–substrate distance if the best deposition conditions which mostly attain the lowest resistivity are matched.

  1. Optimization of ITO layers for applications in a-Si/c-Si heterojunction solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Pla, J.; Tamasi, M.; Rizzoli, R.; Losurdo, M.; Centurioni, E.; Summonte, C.; Rubinelli, F

    2003-02-03

    A detailed study of the properties of indium tin oxide (ITO) thin films used as antireflecting front electrodes in a-Si/c-Si heterojunction solar cells is presented. The deposition conditions of ITO layers by radiofrequency magnetron sputtering were optimized for heterojunction solar cells applications. The X-ray photoelectron spectroscopy analysis of the deposited films allowed for a correlation between the film composition and the experimental parameters used in the sputtering process. The ITO thickness was optimized considering the thickness of the a-Si emitter layer, its optical characteristics and the heterojunction solar cell spectral response. In our devices, the optimal thickness calculated for the ITO film was in the range 80-95 nm, depending on the solar cell spectral response, and a thickness tolerance of {+-}10 nm was found to be suitable to limit the degradation of the device performance. Finally, device simulation results obtained by the 'Analysis of Microelectronic and Photonic Structures' code are reported.

  2. ITO nanoparticles reused from ITO scraps and their applications to sputtering target for transparent conductive electrode layer.

    Science.gov (United States)

    Hong, Sung-Jei; Song, Sang-Hyun; Kim, Byeong Jun; Lee, Jae-Yong; Kim, Young-Sung

    2017-01-01

    In this study, ITO nanoparticles (ITO-NPs) were reused from ITO target scraps to synthesize low cost ITO-NPs and to apply to make sputtering target for transparent conductive electrodes (TCEs). By controlling heat-treatment temperature as 980 °C, we achieved reused ITO-NPs having Brunauer, Emmett and Teller specific surface area (BET SSA) and average particle size 8.05 m 2 /g and 103.8 nm, respectively. The BET SSA decreases along with increasing heat-treatment temperature. The ITO-NPs were grown as round mound shape, and highly crystallized to (222) preferred orientations. Also, applying the reused ITO-NPs, we achieved an ITO target of which density was 99.6%. Using the ITO target, we achieved high quality TCE layer of which sheet resistance and optical transmittance at 550 nm were 29.5 Ω/sq. and 82.3%. Thus, it was confirmed that the reused ITO-NPs was feasible to sputtering target for TCEs layer.

  3. ITO nanoparticles reused from ITO scraps and their applications to sputtering target for transparent conductive electrode layer

    Science.gov (United States)

    Hong, Sung-Jei; Song, Sang-Hyun; Kim, Byeong Jun; Lee, Jae-Yong; Kim, Young-Sung

    2017-09-01

    In this study, ITO nanoparticles (ITO-NPs) were reused from ITO target scraps to synthesize low cost ITO-NPs and to apply to make sputtering target for transparent conductive electrodes (TCEs). By controlling heat-treatment temperature as 980 °C, we achieved reused ITO-NPs having Brunauer, Emmett and Teller specific surface area (BET SSA) and average particle size 8.05 m2/g and 103.8 nm, respectively. The BET SSA decreases along with increasing heat-treatment temperature. The ITO-NPs were grown as round mound shape, and highly crystallized to (222) preferred orientations. Also, applying the reused ITO-NPs, we achieved an ITO target of which density was 99.6%. Using the ITO target, we achieved high quality TCE layer of which sheet resistance and optical transmittance at 550 nm were 29.5 Ω/sq. and 82.3%. Thus, it was confirmed that the reused ITO-NPs was feasible to sputtering target for TCEs layer.

  4. Structural and electrical characteristics of high-k/metal gate metal oxide semiconductor capacitors fabricated on flexible, semi-transparent silicon (100) fabric

    KAUST Repository

    Rojas, Jhonathan Prieto

    2013-02-12

    In pursuit of flexible computers with high performance devices, we demonstrate a generic process to fabricate 10 000 metal-oxide-semiconductor capacitors (MOSCAPs) with semiconductor industry\\'s most advanced high-k/metal gate stacks on widely used, inexpensive bulk silicon (100) wafers and then using a combination of iso-/anisotropic etching to release the top portion of the silicon with the already fabricated devices as a mechanically flexible (bending curvature of 133 m−1), optically semi-transparent silicon fabric (1.5 cm × 3 cm × 25 μm). The electrical characteristics show 3.7 nm effective oxide thickness, −0.2 V flat band voltage, and no hysteresis from the fabricated MOSCAPs.

  5. Structural and electrical characteristics of high-k/metal gate metal oxide semiconductor capacitors fabricated on flexible, semi-transparent silicon (100) fabric

    KAUST Repository

    Rojas, Jhonathan Prieto; Hussain, Muhammad Mustafa; Sevilla, Galo T.

    2013-01-01

    In pursuit of flexible computers with high performance devices, we demonstrate a generic process to fabricate 10 000 metal-oxide-semiconductor capacitors (MOSCAPs) with semiconductor industry's most advanced high-k/metal gate stacks on widely used, inexpensive bulk silicon (100) wafers and then using a combination of iso-/anisotropic etching to release the top portion of the silicon with the already fabricated devices as a mechanically flexible (bending curvature of 133 m−1), optically semi-transparent silicon fabric (1.5 cm × 3 cm × 25 μm). The electrical characteristics show 3.7 nm effective oxide thickness, −0.2 V flat band voltage, and no hysteresis from the fabricated MOSCAPs.

  6. Spontaneous cholangiohepatitis in broiler chickens: immunohistochemical study of Ito cells

    Directory of Open Access Journals (Sweden)

    E Handharyani

    2001-12-01

    Full Text Available The function of Ito cells is expanding from a fat-storing site to a center of extracellular matrix metabolism and mediator production in the liver. Immunohistochemical reactivities of Ito cells were examined in eight livers of broiler chickens affected with spontaneous cholangiohepatitis and six chicken livers with malformation of extrahepatic biliary tracts. The livers in both groups revealed severe diffuse fibrosis. Ito cells expressing HHF35 muscle actin and desmin actively proliferated in the fibrotic foci of the all livers. The immunoreactivities of Ito cells to antibodies were enhanced compared with those in normal livers. There were no immunohistochemical differences between the Ito cells of two groups. From these findings, it was suggested that Ito cells actively proliferate and show enhanced immunoreactivities in the livers affected with cholangiohepatitis andmalformation of extrahepatic biliary tracts.

  7. Enhancement of optical transmittance and electrical resistivity of post-annealed ITO thin films RF sputtered on Si

    Science.gov (United States)

    Ali, Ahmad Hadi; Hassan, Zainuriah; Shuhaimi, Ahmad

    2018-06-01

    This paper reports on the enhancement of optical transmittance and electrical resistivity of indium tin oxide (ITO) transparent conductive oxides (TCO) deposited by radio frequency (RF) sputtering on Si substrate. Post-annealing was conducted on the samples at temperature ranges of 500-700 °C. From X-ray diffraction analysis (XRD), ITO (2 2 2) peak was observed after post-annealing indicating crystallization phase of the films. From UV-vis measurements, the ITO thin film shows highest transmittance of more than 90% at post-annealing temperature of 700 °C as compared to the as-deposited thin films. From atomic force microscope (AFM), the surface roughness becomes smoother after post-annealing as compared to the as-deposited. The lowest electrical resistivity for ITO sample is 6.68 × 10-4 Ω cm after post-annealed at 700 °C that are contributed by high carrier concentration and mobility. The improved structural and surface morphological characteristics helps in increasing the optical transmittance and reducing the electrical resistivity of the ITO thin films.

  8. Optical second harmonic generation phase measurement at interfaces of some organic layers with indium tin oxide

    International Nuclear Information System (INIS)

    Ngah Demon, Siti Zulaikha; Miyauchi, Yoshihiro; Mizutani, Goro; Matsushima, Toshinori; Murata, Hideyuki

    2014-01-01

    Highlights: • SHG phase from the interfaces of ITO/CuPc and ITO/pentacene was observed. • Optical dispersion of the organic thin film was taken into account. • Phase shift from bare ITO was 140° for ITO/CuPc and 160° for ITO/pentacene. - Abstract: We observed phase shift in optical second harmonic generation (SHG) from interfaces of indium tin oxide (ITO)/copper phthalocyanine (CuPc) and ITO/pentacene. Phase correction due to Fresnel factors of the sample was taken into account. The phase of SHG electric field at the ITO/pentacene interface, ϕ interface with respect to the phase of SHG of bare substrate ITO was 160°, while the interface of ITO/CuPc had a phase of 140°

  9. Optical second harmonic generation phase measurement at interfaces of some organic layers with indium tin oxide

    Energy Technology Data Exchange (ETDEWEB)

    Ngah Demon, Siti Zulaikha [School of Materials Science, Japan Advanced Institute of Science and Technology, 923-1292 Ishikawa (Japan); Department of Physics, Centre of Defence Foundation Studies, National Defence University of Malaysia, 53 000 Kuala Lumpur (Malaysia); Miyauchi, Yoshihiro [Department of Applied Physics, School of Applied Sciences, National Defense Academy of Japan, 239-8686 Kanagawa (Japan); Mizutani, Goro, E-mail: mizutani@jaist.ac.jp [School of Materials Science, Japan Advanced Institute of Science and Technology, 923-1292 Ishikawa (Japan); Matsushima, Toshinori; Murata, Hideyuki [School of Materials Science, Japan Advanced Institute of Science and Technology, 923-1292 Ishikawa (Japan)

    2014-08-30

    Highlights: • SHG phase from the interfaces of ITO/CuPc and ITO/pentacene was observed. • Optical dispersion of the organic thin film was taken into account. • Phase shift from bare ITO was 140° for ITO/CuPc and 160° for ITO/pentacene. - Abstract: We observed phase shift in optical second harmonic generation (SHG) from interfaces of indium tin oxide (ITO)/copper phthalocyanine (CuPc) and ITO/pentacene. Phase correction due to Fresnel factors of the sample was taken into account. The phase of SHG electric field at the ITO/pentacene interface, ϕ{sub interface} with respect to the phase of SHG of bare substrate ITO was 160°, while the interface of ITO/CuPc had a phase of 140°.

  10. Touch sensors based on planar liquid crystal-gated-organic field-effect transistors

    International Nuclear Information System (INIS)

    Seo, Jooyeok; Lee, Chulyeon; Han, Hyemi; Lee, Sooyong; Nam, Sungho; Kim, Youngkyoo; Kim, Hwajeong; Lee, Joon-Hyung; Park, Soo-Young; Kang, Inn-Kyu

    2014-01-01

    We report a tactile touch sensor based on a planar liquid crystal-gated-organic field-effect transistor (LC-g-OFET) structure. The LC-g-OFET touch sensors were fabricated by forming the 10 μm thick LC layer (4-cyano-4 ′ -pentylbiphenyl - 5CB) on top of the 50 nm thick channel layer (poly(3-hexylthiophene) - P3HT) that is coated on the in-plane aligned drain/source/gate electrodes (indium-tin oxide - ITO). As an external physical stimulation to examine the tactile touch performance, a weak nitrogen flow (83.3 μl/s) was employed to stimulate the LC layer of the touch device. The LC-g-OFET device exhibited p-type transistor characteristics with a hole mobility of 1.5 cm 2 /Vs, but no sensing current by the nitrogen flow touch was measured at sufficiently high drain (V D ) and gate (V G ) voltages. However, a clear sensing current signal was detected at lower voltages, which was quite sensitive to the combination of V D and V G . The best voltage combination was V D = −0.2 V and V G = −1 V for the highest ratio of signal currents to base currents (i.e., signal-to-noise ratio). The change in the LC alignment upon the nitrogen flow touch was assigned as the mechanism for the present LC-g-OFET touch sensors

  11. ITO/metal/ITO anode for efficient transparent white organic light-emitting diodes

    Science.gov (United States)

    Joo, Chul Woong; Lee, Jonghee; Sung, Woo Jin; Moon, Jaehyun; Cho, Nam Sung; Chu, Hye Yong; Lee, Jeong-Ik

    2015-02-01

    We report on the characteristics of enhanced and balanced white-light emission of transparent organic light emitting diodes (TOLEDs) by introducing anode that has a stack structure of ITO/metal/ITO (IMI). We have investigated an anode that has a stack structure of IMI. IMI anodes are typically composed of a thin Ag layer (˜15 nm) sandwiched between two ITO layers (˜50 nm). By inserting an Ag layer it was possible to achieve sheet resistance lower than 3 Ω/sq. and transmittance of 86% at a wavelength of 550 nm. The Ag insert can act as a reflective component. With its counterpart, a transparent cathode made of a thin Ag layer (˜15 nm), micro-cavities (MC) can be effectively induced in the OLED, leading to improved performance. Using an IMI anode, it was possible to significantly increase the current efficiencies. The current efficiencies of the top and the bottom of the IMI TOLED increased to 23.0 and 15.6 cd/A, respectively, while those of the white TOLED with the ITO anode were 20.7 and 5.1 cd/A, respectively. A 30% enhancement in the overall current efficiency was achieved by taking advantage of the MC effect and the low sheet resistance.

  12. Fabrication of nickel oxide and Ni-doped indium tin oxide thin films using pyrosol process

    International Nuclear Information System (INIS)

    Nakasa, Akihiko; Adachi, Mami; Usami, Hisanao; Suzuki, Eiji; Taniguchi, Yoshio

    2006-01-01

    Organic light emitting diodes (OLEDs) need indium tin oxide (ITO) anodes with highly smooth surface. The work function of ITO, about 4.8 eV, is generally rather lower than the optimum level for application to OLEDs. In this work, NiO was deposited by pyrosol process on pyrosol ITO film to increase the work function of the ITO for improving the performance of OLEDs. It was confirmed that NiO was successfully deposited on pyrosol ITO film and the NiO deposition increased the work function of pyrosol ITO, using X-ray diffraction (XRD), field emission scanning electron microscopy (FE-SEM), atomic force microscopy (AFM) and atmospheric photoelectron spectroscopy. Furthermore, doping ITO with Ni succeeded in producing the Ni-doped ITO film with high work function and lower sheet resistance

  13. Atomic-Layer-Deposited AZO Outperforms ITO in High-Efficiency Polymer Solar Cells

    KAUST Repository

    Kan, Zhipeng

    2018-05-11

    Tin-doped indium oxide (ITO) transparent conducting electrodes are widely used across the display industry, and are currently the cornerstone of photovoltaic device developments, taking a substantial share in the manufacturing cost of large-area modules. However, cost and supply considerations are set to limit the extensive use of indium for optoelectronic device applications and, in turn, alternative transparent conducting oxide (TCO) materials are required. In this report, we show that aluminum-doped zinc oxide (AZO) thin films grown by atomic layer deposition (ALD) are sufficiently conductive and transparent to outperform ITO as the cathode in inverted polymer solar cells. Reference polymer solar cells made with atomic-layer-deposited AZO cathodes, PCE10 as the polymer donor and PC71BM as the fullerene acceptor (model systems), reach power conversion efficiencies of ca. 10% (compared to ca. 9% with ITO-coated glass), without compromising other figures of merit. These ALD-grown AZO electrodes are promising for a wide range of optoelectronic device applications relying on TCOs.

  14. Atomic-Layer-Deposited AZO Outperforms ITO in High-Efficiency Polymer Solar Cells

    KAUST Repository

    Kan, Zhipeng; Wang, Zhenwei; Firdaus, Yuliar; Babics, Maxime; Alshareef, Husam N.; Beaujuge, Pierre

    2018-01-01

    Tin-doped indium oxide (ITO) transparent conducting electrodes are widely used across the display industry, and are currently the cornerstone of photovoltaic device developments, taking a substantial share in the manufacturing cost of large-area modules. However, cost and supply considerations are set to limit the extensive use of indium for optoelectronic device applications and, in turn, alternative transparent conducting oxide (TCO) materials are required. In this report, we show that aluminum-doped zinc oxide (AZO) thin films grown by atomic layer deposition (ALD) are sufficiently conductive and transparent to outperform ITO as the cathode in inverted polymer solar cells. Reference polymer solar cells made with atomic-layer-deposited AZO cathodes, PCE10 as the polymer donor and PC71BM as the fullerene acceptor (model systems), reach power conversion efficiencies of ca. 10% (compared to ca. 9% with ITO-coated glass), without compromising other figures of merit. These ALD-grown AZO electrodes are promising for a wide range of optoelectronic device applications relying on TCOs.

  15. Interface passivation and trap reduction via hydrogen fluoride for molybdenum disulfide on silicon oxide back-gate transistors

    Science.gov (United States)

    Hu, Yaoqiao; San Yip, Pak; Tang, Chak Wah; Lau, Kei May; Li, Qiang

    2018-04-01

    Layered semiconductor molybdenum disulfide (MoS2) has recently emerged as a promising material for flexible electronic and optoelectronic devices because of its finite bandgap and high degree of gate control. Here, we report a hydrogen fluoride (HF) passivation technique for improving the carrier mobility and interface quality of chemical vapor deposited monolayer MoS2 on a SiO2/Si substrate. After passivation, the fabricated MoS2 back-gate transistors demonstrate a more than double improvement in average electron mobility, a reduced gate hysteresis gap of 3 V, and a low interface trapped charge density of ˜5.8 × 1011 cm-2. The improvements are attributed to the satisfied interface dangling bonds, thus a reduction of interface trap states and trapped charges. Surface x-ray photoelectron spectroscopy analysis and first-principles simulation were performed to verify the HF passivation effect. The results here highlight the necessity of a MoS2/dielectric passivation strategy and provides a viable route for enhancing the performance of MoS2 nano-electronic devices.

  16. Roll-to-roll printed silver nanowires for increased stability of flexible ITO-free organic solar cell modules

    DEFF Research Database (Denmark)

    Benatto, Gisele Alves dos Reis; Roth, Bérenger; Corazza, Michael

    2016-01-01

    We report the use of roll-to-roll printed silver nanowire networks as front electrodes for fully roll-to-roll processed flexible indium-tin-oxide (ITO) free OPV modules. We prepared devices with two types of back electrodes, a simple PEDOT:PSS back electrode and a PEDOT:PSS back electrode...

  17. ITO-free inverted polymer/fullerene solar cells: Interface effects and comparison of different semi-transparent front contacts

    NARCIS (Netherlands)

    Wilken, Sebastian; Hoffmann, Thomas; von Hauff, Elizabeth; Borchert, Holger; Parisi, Juergen

    Polymer/fullerene solar cells with an inverted layer sequence and free from indium tin oxide (ITO) are presented in this study. We concentrate on critical interface effects in inverted devices and compare different semi-transparent front contacts, such as ultra-thin Au films and Au grid structures.

  18. Influence of O2 Flux on Compositions and Properties of ITO Films Deposited at Room Temperature by Direct-Current Pulse Magnetron Sputtering

    International Nuclear Information System (INIS)

    Wang Hua-Lin; Ding Wan-Yu; Liu Chao-Qian; Chai Wei-Ping

    2010-01-01

    Indium tin oxide (ITO) films were deposited on glass substrates at room temperature by dc pulse magnetron sputtering. Varying O 2 flux, ITO films with different properties are obtained. Both x-ray diffractometer and x-ray photoelectron spectrometer are used to study the change of crystalline structures and bonding structures of ITO films, respectively. Electrical properties are measured by four-point probe measurements. The results indicate that the chemical structures and compositions of ITO films strongly depend on the O 2 flux. With increasing O 2 flux, ITO films display better crystallization, which could decrease the resistivity of films. On the contrary, ITO films contain less O vacancies with increasing O 2 flux, which could worsen the conductive properties of films. Without any heat treatment onto the samples, the resistivity of the ITO film could reach 6.0 × 10 −4 Ω ·cm, with the optimal deposition parameter of 0.2 sccm O 2 flux. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

  19. Ratiometric Time-Gated Luminescence Probe for Nitric Oxide Based on an Apoferritin-Assembled Lanthanide Complex-Rhodamine Luminescence Resonance Energy Transfer System.

    Science.gov (United States)

    Tian, Lu; Dai, Zhichao; Liu, Xiangli; Song, Bo; Ye, Zhiqiang; Yuan, Jingli

    2015-11-03

    Using apoferritin (AFt) as a carrier, a novel ratiometric luminescence probe based on luminescence resonance energy transfer (LRET) between a Tb(3+) complex (PTTA-Tb(3+)) and a rhodamine derivative (Rh-NO), PTTA-Tb(3+)@AFt-Rh-NO, has been designed and prepared for the specific recognition and time-gated luminescence detection of nitric oxide (NO) in living samples. In this LRET probe, PTTA-Tb(3+) encapsulated in the core of AFt is the energy donor, and Rh-NO, a NO-responsive rhodamine derivative, bound on the surface of AFt is the energy acceptor. The probe only emits strong Tb(3+) luminescence because the emission of rhodamine is switched off in the absence of NO. Upon reaction with NO, accompanied by the turn-on of rhodamine emission, the LRET from Tb(3+) complex to rhodamine occurs, which results in the remarkable increase and decrease of the long-lived emissions of rhodamine and PTTA-Tb(3+), respectively. After the reaction, the intensity ratio of rhodamine emission to Tb(3+) emission, I565/I539, is ∼24.5-fold increased, and the dose-dependent enhancement of I565/I539 shows a good linearity in a wide concentration range of NO. This unique luminescence response allowed PTTA-Tb(3+)@AFt-Rh-NO to be conveniently used as a ratiometric probe for the time-gated luminescence detection of NO with I565/I539 as a signal. Taking advantages of high specificity and sensitivity of the probe as well as its good water-solubility, biocompatibility, and cell membrane permeability, PTTA-Tb(3+)@AFt-Rh-NO was successfully used for the luminescent imaging of NO in living cells and Daphnia magna. The results demonstrated the efficacy of the probe and highlighted it's advantages for the ratiometric time-gated luminescence bioimaging application.

  20. 100-nm gate lithography for double-gate transistors

    Science.gov (United States)

    Krasnoperova, Azalia A.; Zhang, Ying; Babich, Inna V.; Treichler, John; Yoon, Jung H.; Guarini, Kathryn; Solomon, Paul M.

    2001-09-01

    The double gate field effect transistor (FET) is an exploratory device that promises certain performance advantages compared to traditional CMOS FETs. It can be scaled down further than the traditional devices because of the greater electrostatic control by the gates on the channel (about twice as short a channel length for the same gate oxide thickness), has steeper sub-threshold slope and about double the current for the same width. This paper presents lithographic results for double gate FET's developed at IBM's T. J. Watson Research Center. The device is built on bonded wafers with top and bottom gates self-aligned to each other. The channel is sandwiched between the top and bottom polysilicon gates and the gate length is defined using DUV lithography. An alternating phase shift mask was used to pattern gates with critical dimensions of 75 nm, 100 nm and 125 nm in photoresist. 50 nm gates in photoresist have also been patterned by 20% over-exposure of nominal 100 nm lines. No trim mask was needed because of a specific way the device was laid out. UV110 photoresist from Shipley on AR-3 antireflective layer were used. Process windows, developed and etched patterns are presented.

  1. Study of low resistivity and high work function ITO films prepared by oxygen flow rates and N2O plasma treatment for amorphous/crystalline silicon heterojunction solar cells.

    Science.gov (United States)

    Hussain, Shahzada Qamar; Oh, Woong-Kyo; Kim, Sunbo; Ahn, Shihyun; Le, Anh Huy Tuan; Park, Hyeongsik; Lee, Youngseok; Dao, Vinh Ai; Velumani, S; Yi, Junsin

    2014-12-01

    Pulsed DC magnetron sputtered indium tin oxide (ITO) films deposited on glass substrates with lowest resistivity of 2.62 x 10(-4) Ω x cm and high transmittance of about 89% in the visible wavelength region. We report the enhancement of ITO work function (Φ(ITO)) by the variation of oxygen (O2) flow rate and N2O surface plasma treatment. The Φ(ITO) increased from 4.43 to 4.56 eV with the increase in O2 flow rate from 0 to 4 sccm while surface treatment of N2O plasma further enhanced the ITO work function to 4.65 eV. The crystallinity of the ITO films improved with increasing O2 flow rate, as revealed by XRD analysis. The ITO work function was increased by the interfacial dipole resulting from the surface rich in O- ions and by the dipole moment formed at the ITO surface during N2O plasma treatment. The ITO films with high work functions can be used to modify the front barrier height in heterojunction with intrinsic thin layer (HIT) solar cells.

  2. AlGaN/GaN Metal-Oxide-Semiconductor High-Electron-Mobility Transistor with Polarized P(VDF-TrFE) Ferroelectric Polymer Gating

    Science.gov (United States)

    Liu, Xinke; Lu, Youming; Yu, Wenjie; Wu, Jing; He, Jiazhu; Tang, Dan; Liu, Zhihong; Somasuntharam, Pannirselvam; Zhu, Deliang; Liu, Wenjun; Cao, Peijiang; Han, Sun; Chen, Shaojun; Seow Tan, Leng

    2015-01-01

    Effect of a polarized P(VDF-TrFE) ferroelectric polymer gating on AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistors (MOS-HEMTs) was investigated. The P(VDF-TrFE) gating in the source/drain access regions of AlGaN/GaN MOS-HEMTs was positively polarized (i.e., partially positively charged hydrogen were aligned to the AlGaN surface) by an applied electric field, resulting in a shift-down of the conduction band at the AlGaN/GaN interface. This increases the 2-dimensional electron gas (2-DEG) density in the source/drain access region of the AlGaN/GaN heterostructure, and thereby reduces the source/drain series resistance. Detailed material characterization of the P(VDF-TrFE) ferroelectric film was also carried out using the atomic force microscopy (AFM), X-ray Diffraction (XRD), and ferroelectric hysteresis loop measurement. PMID:26364872

  3. GaN-Based High-k Praseodymium Oxide Gate MISFETs with P2S5/(NH42SX + UV Interface Treatment Technology

    Directory of Open Access Journals (Sweden)

    Chao-Wei Lin

    2012-01-01

    Full Text Available This study examines the praseodymium-oxide- (Pr2O3- passivated AlGaN/GaN metal-insulator-semiconductor high electron mobility transistors (MIS-HEMTs with high dielectric constant in which the AlGaN Schottky layers are treated with P2S5/(NH42SX + ultraviolet (UV illumination. An electron-beam evaporated Pr2O3 insulator is used instead of traditional plasma-assisted chemical vapor deposition (PECVD, in order to prevent plasma-induced damage to the AlGaN. In this work, the HEMTs are pretreated with P2S5/(NH42SX solution and UV illumination before the gate insulator (Pr2O3 is deposited. Since stable sulfur that is bound to the Ga species can be obtained easily and surface oxygen atoms are reduced by the P2S5/(NH42SX pretreatment, the lowest leakage current is observed in MIS-HEMT. Additionally, a low flicker noise and a low surface roughness (0.38 nm are also obtained using this novel process, which demonstrates its ability to reduce the surface states. Low gate leakage current Pr2O3 and high-k AlGaN/GaN MIS-HEMTs, with P2S5/(NH42SX + UV illumination treatment, are suited to low-noise applications, because of the electron-beam-evaporated insulator and the new chemical pretreatment.

  4. Effect of deposition parameters on properties of ITO films prepared by reactive middle frequency pulsed dual magnetron sputtering

    International Nuclear Information System (INIS)

    Rogozin, A.I.; Vinnichenko, M.V.; Kolitsch, A.; Moeller, W.

    2004-01-01

    ITO layers with low resistivity and high visible transmittance were produced by means of middle frequency reactive dual magnetron sputtering. The influence of base pressure, Ar/O 2 ratio and magnetron pulse duration on the film composition, structure, electrical, and optical properties has been investigated. The deposition rate is proportional to the magnetron operation power at changing pulse duration and constant Ar and O 2 flows. At enhanced O 2 flows an onset of the magnetron target oxidation is discussed as a reason for the decrease of the deposition rate. The presence of water vapor in the residual gas is determined to be a reason for deterioration of resistivity and optical transmittance observed for ITO films produced at a base pressures higher than 5·10 -4 Pa. It is demonstrated that spectroscopic ellipsometry can be used as a noncontact tool to monitor the resistivity of ITO films

  5. Electronic structure of ClAlPc/pentacene/ITO interfaces studied by using soft X-ray spectroscopy

    International Nuclear Information System (INIS)

    Cho, Sangwan; Lee, Sangho; Kim, Minsoo; Heo, Nari; Lee, Geunjeong; Smith, Kevin E.

    2014-01-01

    The interfacial electronic structure of a bilayer of chloroaluminum phthalocyanine (ClAlPc) and pentacene grown on indium tin oxide (ITO) has been studied using synchrotron-radiation-excited photoelectron spectroscopy. The energy difference between the highest occupied molecular orbital (HOMO) level of the pentacene layer and the lowest unoccupied molecular orbital (LUMO) level of the ClAlPc layer (E D HOMO - E A LUMO ) was determined and compared with that of C 60 / pentacene bilayers. The E D HOMO - E A LUMO of a heterojunction with ClAlPc was found to be 1.3 eV while that with C 60 was 0.9 eV. This difference is discussed in terms of the difference in the ionization energy of each acceptor materials. We also obtained the complete energy level diagrams of both ClAlPc/pentacene/ITO and C 60 /pentacene/ITO.

  6. Electrical and Plasmonic Properties of Ligand-Free Sn(4+) -Doped In2 O3 (ITO) Nanocrystals.

    Science.gov (United States)

    Jagadeeswararao, Metikoti; Pal, Somnath; Nag, Angshuman; Sarma, D D

    2016-03-03

    Sn(4+) -doped In2 O3 (ITO) is a benchmark transparent conducting oxide material. We prepared ligand-free but colloidal ITO (8 nm, 10 % Sn(4+) ) nanocrystals (NCs) by using a post-synthesis surface-modification reaction. (CH3 )3 OBF4 removes the native oleylamine ligand from NC surfaces to give ligand-free, positively charged NCs that form a colloidal dispersion in polar solvents. Both oleylamine-capped and ligand-free ITO NCs exhibit intense absorption peaks, due to localized surface plasmon resonance (LSPR) at around λ=1950 nm. Compared with oleylamine-capped NCs, the electrical resistivity of ligand-free ITO NCs is lower by an order of magnitude (≈35 mΩ cm(-1) ). Resistivity over a wide range of temperatures can be consistently described as a composite of metallic ITO grains embedded in an insulating matrix by using a simple equivalent circuit, which provides an insight into the conduction mechanism in these systems. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  7. Influence of Substrate Temperature on Structural, Electrical and Optical Properties of Ito Thin Films Prepared by RF Magnetron Sputtering

    Science.gov (United States)

    He, Bo; Zhao, Lei; Xu, Jing; Xing, Huaizhong; Xue, Shaolin; Jiang, Meng

    2013-10-01

    In this paper, we investigated indium-tin-oxide (ITO) thin films on glass substrates deposited by RF magnetron sputtering using ceramic target to find the optimal condition for fabricating optoelectronic devices. The structural, electrical and optical properties of the ITO films prepared at various substrate temperatures were investigated. The results indicate the grain size increases with substrate temperature increases. As the substrate temperature grew up, the resistivity of ITO films greatly decreased. The ITO film possesses high quality in terms of electrode functions, when substrate temperature is 480°C. The resistivity is as low as 9.42 × 10-5 Ω•cm, while the carrier concentration and mobility are as high as 3.461 × 1021 atom/cm3 and 19.1 cm2/Vṡs, respectively. The average transmittance of the film is about 95% in the visible region. The novel ITO/np-Silicon frame, which prepared by RF magnetron sputtering at 480°C substrate temperature, can be used not only for low-cost solar cell, but also for high quantum efficiency of UV and visible lights enhanced photodetector for various applications.

  8. Design and development of plasmonic nanostructured electrodes for ITO-free organic photovoltaic cells on rigid and highly flexible substrates

    Science.gov (United States)

    Richardson, Beau J.; Zhu, Leize; Yu, Qiuming

    2017-04-01

    Indium tin oxide (ITO) is the most common transparent electrode used in organic photovoltaics (OPVs), yet limited indium reserves and poor mechanical properties make it non-ideal for large-scale OPV production. To replace ITO, we designed, fabricated, and deployed plasmonic nanostructured electrodes in inverted OPV devices. We found that active layer absorption is significantly impacted by ZnO thickness which affects the optical field distribution inside the resonant cavity formed between the plasmonic nanostructured electrode and top electrode. High quality Cr/Au nanostructured electrodes were fabricated by nanoimprint lithography and deployed in ITO-free inverted devices on glass. Devices with thinner ZnO showed a PCE as high as 5.70% and higher J SC’s than devices on thicker ZnO, in agreement with finite-difference time-domain simulations. In addition, as the active layer was made optically thin, ITO-based devices showed diminished J SC while the resonant cavity effect from plasmonic nanostructured electrodes retained J SC. Preliminary ITO-free, flexible devices on PET showed a PCE of 1.82% and those fabricated on ultrathin and conformable Parylene substrates yielded an initial PCE over 1%. The plasmonic electrodes and device designs in this work show promise for developing highly functioning conformable devices that can be applied to numerous needs for lightweight, ubiquitous power generation.

  9. Interfacial durability and electrical properties of CNT or ITO/PVDF nanocomposites for self-sensor and micro actuator applications

    International Nuclear Information System (INIS)

    Park, Joung-Man; Gu, Ga-Young; Wang, Zuo-Jia; Kwon, Dong-Jun; DeVries, K. Lawrence

    2013-01-01

    Interfacial durability and electrical properties of CNT (carbon nanotube) or ITO (indium tin oxide) coated PVDF (poly(vinylidene fluoride)) nanocomposites were investigated for self-sensor and micro-actuator applications. The electrical resistivity of nanocomposites and the durability of interfacial adhesion were measured using a four points method during cyclic fatigue loading. Although the CNT/PVDF nanocomposites exhibited lower electrical resistivity due to the inherently low resistivity of CNT, both composite types showed good self-sensing performance. The durability of the adhesion at the interface was also good for both CNT and ITO/PVDF nanocomposites. Static contact angle, surface energy, work of adhesion, and spreading coefficient between either CNT or ITO and PVDF were determined as checks to verify the durability of the interfacial adhesion. The actuation performance of CNT or ITO coated PVDF specimens was determined through measurements of the induced displacement using a laser displacement sensor, while both the frequency and voltage were changed. The displacement of these actuated nanocomposites increased with increasing voltage and decreased with increasing frequency. CNT/PVDF nanocomposites exhibited better performance as self-sensors and micro-actuators than did ITO/PVDF nanocomposites.

  10. Effect on the properties of ITO thin films in Gamma environment

    Science.gov (United States)

    Sofi, A. H.; Shah, M. A.; Asokan, K.

    2018-04-01

    The present study reports the effect of gamma irradiation of varying doses (0-200 kGy) on the physical properties of the indium tin oxide (ITO) thin films. The films were fabricated by thermal evaporation method using indium-tin (InSn) ingots followed by an oxidation in atmosphere at a temperature of 550 °C. X-ray diffraction analysis confirmed the body-centered cubic (BCC) structure corresponds to the ITO thin films, high phase purity and a variation in crystallite size between 30-44 nm. While the optical studies revealed an increase in transmission as well as variation in optical band gap, the electrical studies confirmed n-type semiconductive behavior of the thin films, increase in mobility and a decrease in resistivity from 2.33×10-2 - 9.31×10-4 Ωcm with the increase in gamma dose from 0-200 kGy. The gamma irradiation caused totally electronic excitation and resulted in this modifications. The degenerate electron gas model was considered when attempting to understand the prevalent scattering mechanism in gamma irradiated ITO thin films.

  11. Self-assembled gold nanoparticles modified ITO electrodes: The monolayer binder molecule effect

    Energy Technology Data Exchange (ETDEWEB)

    Ballarin, Barbara; Cassani, Maria Cristina; Scavetta, Erika; Tonelli, Domenica [Dipartimento di Chimica Fisica ed Inorganica, Universita di Bologna, V.le Risorgimento 4, 40136 Bologna, INSTM, UdR Bologna (Italy)

    2008-11-15

    The fabrication of gold attached organosilane-coated indium tin oxide Au{sub NPs}-MPTMS/ITO and Au{sub NPs}-APTES/ITO electrodes [MPTMS 3-(mercaptopropyl)-trimethoxysilane, APTES = 3-(aminopropyl)-triethoxysilane, ITO = indium tin oxide] was carried out making use of a well-known two-step procedure and the role played by the -SH and -NH{sub 2} functional groups in the two electrodes has been examined and compared using different techniques. Information about particle coverage and inter-particle spacing has been obtained using transmission electron microscopy (TEM), scanning electron microscopy (SEM) and atomic force microscopy (AFM) whereas, bulk surface properties have been probed with UV-vis spectroscopy, CV and electrochemical impedance spectroscopy (EIS). The catalytic activity of the two electrodes has been evaluated studying the electrooxidation of methanol in alkaline conditions. The results obtained show that the NH{sub 2} functionality in the APTES binder molecule favours the formation of isle-like Au nanoparticle aggregates that lead to both a higher electron transfer and electrocatalytic activity. (author)

  12. Determining oxide trapped charges in Al2O3 insulating films on recessed AlGaN/GaN heterostructures by gate capacitance transients measurements

    Science.gov (United States)

    Fiorenza, Patrick; Greco, Giuseppe; Schilirò, Emanuela; Iucolano, Ferdinando; Lo Nigro, Raffaella; Roccaforte, Fabrizio

    2018-05-01

    This letter presents time-dependent gate-capacitance transient measurements (C–t) to determine the oxide trapped charges (N ot) in Al2O3 films deposited on recessed AlGaN/GaN heterostructures. The C–t transients acquired at different temperatures under strong accumulation allowed to accurately monitor the gradual electron trapping, while hindering the re-emission by fast traps that may affect conventional C–V hysteresis measurements. Using this method, an increase of N ot from 2 to 6 × 1012 cm‑2 was estimated between 25 and 150 °C. The electron trapping is ruled by an Arrhenius dependence with an activation energy of 0.12 eV which was associated to points defects present in the Al2O3 films.

  13. Dual-Material Gate Approach to Suppression of Random-Dopant-Induced Characteristic Fluctuation in 16 nm Metal-Oxide-Semiconductor Field-Effect-Transistor Devices

    Science.gov (United States)

    Li, Yiming; Lee, Kuo-Fu; Yiu, Chun-Yen; Chiu, Yung-Yueh; Chang, Ru-Wei

    2011-04-01

    In this work, we explore for the first time dual-material gate (DMG) and inverse DMG devices for suppressing the random-dopant (RD)-induced characteristic fluctuation in 16 nm metal-oxide-semiconductor field-effect-transistor (MOSFET) devices. The physical mechanism of suppressing the characteristic fluctuation of DMG devices is observed and discussed. The achieved improvement in suppressing the RD-induced threshold voltage, on-state current, and off-state current fluctuations are 28, 12.3, and 59%, respectively. To further suppress the fluctuations, an approach that combines the DMG method and channel-doping-profile engineering is also advanced and explored. The results of our study show that among the suppression techniques, the use of the DMG device with an inverse lateral asymmetric channel-doping-profile has good immunity to fluctuation.

  14. Optical, electrical, structural and microstructural characteristics of rf sputtered ITO films developed for art protection coatings

    International Nuclear Information System (INIS)

    Krasilnikova Sytchkova, A.; Grilli, M.L.; Piegari, A.; Boycheva, S.

    2007-01-01

    Transparent and conductive tin-doped indium oxide (ITO) films have been prepared by rf sputtering in an Ar and Ar+O 2 gas mixture, both with and without additional substrate heating. The influence of both deposition conditions and post-annealing treatment on optical, electrical, structural and microstructural properties of the ITO films has been investigated. The optical constants have been calculated in the range 320-2500 nm using a combination of several theoretical models. A schematic diagram for the film properties change versus composition has been proposed in terms of a generalized parameter characterising the energy efficiency of the film formation. The deposition conditions and the optical and electrical properties of the films have been optimized with respect to the requirements for their application in art protection coatings. (orig.)

  15. Enhancing light reflective properties on ITO glass by plasmonic effect of silver nanoparticles

    Directory of Open Access Journals (Sweden)

    Dezhong Zhang

    Full Text Available The preparation of well-defined silver (Ag nanoparticle arrays is reported in this paper. Ag nanoparticles are electrodeposited on Indium tin oxide (ITO coated glass substrates at 30 °C. The size, shape and periodicity of the Ag nanoparticle arrays are well-controlled. We study the effect of particle size and interparticle distance on reflection enhancement. The sample at the deposition potential of −0.2 V for an electrodeposition time of 3600 s exhibits an enhancement of 28% in weighted reflection in contrast with bare ITO glass. This study reports the high reflection of Ag nanoparticle arrays by electrodeposition method might be application to large-scale photovoltaic devices.

  16. Effect of oxygen flow rate on ITO thin films deposited by facing targets sputtering

    International Nuclear Information System (INIS)

    Kim, Youn J.; Jin, Su B.; Kim, Sung I.; Choi, Yoon S.; Choi, In S.; Han, Jeon G.

    2010-01-01

    Tin-doped indium oxide (ITO) thin films were deposited on glass substrates at various oxygen flow rates using a planar magnetron sputtering system with facing targets. In this system, the strong internal magnets inside the target holders confine the plasma between the targets. High resolution transmission electron microscopy revealed a combination of amorphous and crystalline phases on the glass substrate. X-ray photoelectron spectroscopy suggested that the decrease in carrier concentration and increase in mobility were caused by a decrease in the concentration of Sn 4+ states. The electrical and optical properties of the ITO films were examined by Hall measurements and UV-visible spectroscopy, which showed a film resistivity and transmittance of 4.26 x l0 -4 Ω cm, and > 80% in the visible region, respectively.

  17. Amorphous ITO thin films prepared by DC sputtering for electrochromic applications

    International Nuclear Information System (INIS)

    Teixeira, V.; Cui, H.N.; Meng, L.J.; Fortunato, E.; Martins, R.

    2002-01-01

    Indium-Tin-Oxide (ITO) thin films were deposited on glass substrates using DC magnetron reactive sputtering at different bias voltages and substrate temperatures. Some improvements were obtained on film properties, microstructure and other physical characteristics for different conditions. Amorphous and polycrystalline films can be obtained for various deposition conditions. The transmission, absorption, spectral and diffuse reflection of ITO films were measured in some ranges of UV-Vis-NIR. The refractive index (n), Energy band gap E g and the surface roughness of the film were derived from the measured spectra data. The carrier density (n c ) and the carrier mobility (μ) of the film micro conductive properties were discussed. The films exhibited suitable optical transmittance and conductivity for electrochromic applications

  18. Structural and morphological properties of ITO thin films grown by magnetron sputtering

    Science.gov (United States)

    Ghorannevis, Z.; Akbarnejad, E.; Ghoranneviss, M.

    2015-10-01

    Physical properties of transparent and conducting indium tin oxide (ITO) thin films grown by radiofrequency (RF) magnetron sputtering are studied systematically by changing deposition time. The X-ray diffraction (XRD) data indicate polycrystalline thin films with grain orientations predominantly along the (2 2 2) and (4 0 0) directions. From atomic force microscopy (AFM) it is found that by increasing the deposition time, the roughness of the film increases. Scanning electron microscopy (SEM) images show a network of a high-porosity interconnected nanoparticles, which approximately have a pore size ranging between 20 and 30 nm. Optical measurements suggest an average transmission of 80 % for the ITO films. Sheet resistances are investigated using four-point probes, which imply that by increasing the film thickness the resistivities of the films decrease to 2.43 × 10-5 Ω cm.

  19. Analysis of process parameters for a DCMS process of a rotating ceramic ITO target

    Energy Technology Data Exchange (ETDEWEB)

    Ries, Patrick; Wuttig, Matthias [Institute of Physics, RWTH Aachen University (Germany)

    2012-07-01

    ITO is the most commonly used but at the same time rather expensive Transparent Conducting Oxide. This fact is due to the high Indium to Tin ratio of 90:10 that is necessary to obtain the best electrical conductivity. If it is possible to find another ratio with similar electrical properties but higher Tin content, this would be of great industrial relevance. To accomplish this goal and to check the hypothesis an in-house developed serial co-sputtering system is employed. The tool consists of a rotating primary cathode and up to two secondary cathodes for co-sputtering processes. The process parameters of a DC-sputtered ceramic ITO target installed on the primary cathode are analyzed and correlations with the thin film properties, especially the resistance and the transmittance are shown. The resistance behavior upon changing the Tin content via a co-deposition process from a secondary cathode will be presented.

  20. On the processing-structure-property relationship of ITO layers deposited on crystalline and amorphous Si

    International Nuclear Information System (INIS)

    Diplas, S.; Ulyashin, A.; Maknys, K.; Gunnaes, A.E.; Jorgensen, S.; Wright, D.; Watts, J.F.; Olsen, A.; Finstad, T.G.

    2007-01-01

    Indium-tin-oxide (ITO) antireflection coatings were deposited on crystalline Si (c-Si), amorphous hydrogenated Si (a-Si:H) and glass substrates at room temperature (RT), 160 deg. C and 230 deg. C by magnetron sputtering. The films were characterised using atomic force microscopy, transmission electron microscopy, angle resolved X-ray photoelectron spectroscopy, combined with resistance and transmittance measurements. The conductivity and refractive index as well as the morphology of the ITO films showed a significant dependence on the processing conditions. The films deposited on the two different Si substrates at higher temperatures have rougher surfaces compared to the RT ones due to the development of crystallinity and growth of columnar grains

  1. Electrical dependence on the chemical composition of the gate dielectric in indium gallium zinc oxide thin-film transistors

    Energy Technology Data Exchange (ETDEWEB)

    Tari, Alireza, E-mail: atari@uwaterloo.ca; Lee, Czang-Ho; Wong, William S. [Department of Electrical and Computer Engineering, University of Waterloo, 200 University Avenue West, Waterloo, Ontario N2L 3G1 (Canada)

    2015-07-13

    Bottom-gate thin-film transistors were fabricated by depositing a 50 nm InGaZnO (IGZO) channel layer at 150 °C on three separate gate dielectric films: (1) thermal SiO{sub 2}, (2) plasma-enhanced chemical-vapor deposition (PECVD) SiN{sub x}, and (3) a PECVD SiO{sub x}/SiN{sub x} dual-dielectric. X-ray photoelectron and photoluminescence spectroscopy showed the V{sub o} concentration was dependent on the hydrogen concentration of the underlying dielectric film. IGZO films on SiN{sub x} (high V{sub o}) and SiO{sub 2} (low V{sub o}) had the highest and lowest conductivity, respectively. A PECVD SiO{sub x}/SiN{sub x} dual-dielectric layer was effective in suppressing hydrogen diffusion from the nitride layer into the IGZO and resulted in higher resistivity films.

  2. Direct growth of CdSe nanorods on ITO substrates by co-anchoring of ZnO nanoparticles and ethylenediamine

    International Nuclear Information System (INIS)

    Pan Shangke; Xu Tingting; Venkatesan, Swaminathan; Qiao Qiquan

    2012-01-01

    To grow CdSe nanorods directly onto indium tin oxide (ITO) substrates, a ZnO buffer layer composed of nanoparticles with diameter of ∼30–40 nm was prepared by spin coating ZnO sol–gel solution onto the ITO substrates. CdSe nanorods were then successfully in situ grown onto ITO substrates with diameter of ∼30–40 nm and length of ∼120–160 nm using solvothermal method in which CdSe·0.5en (en = ethylenediamine) acted as solution precursor. The in situ synthesized CdSe nanorods were conformed and characterized by atomic force microscope and electron microscopy. The mechanism of such in situ CdSe growth was understood as ZnO nanoparticles anchored en onto ITO substrates, while en linked CdSe with ZnO.

  3. Preparation of ITO/SiO{sub x}/n-Si solar cells with non-decline potential field and hole tunneling by magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Du, H. W.; Yang, J.; Li, Y. H.; Xu, F. [SHU-SolarE R and D Lab, Department of Physics, Shanghai University, Shanghai 200444 (China); Xu, J. [Instrumental Analysis and Research Center, Shanghai University, Shanghai 200444 (China); Ma, Z. Q., E-mail: zqma@shu.edu.cn [SHU-SolarE R and D Lab, Department of Physics, Shanghai University, Shanghai 200444 (China); Instrumental Analysis and Research Center, Shanghai University, Shanghai 200444 (China)

    2015-03-02

    Complete photo-generated minority carrier's quantum tunneling device under AM1.5 illumination is fabricated by depositing tin-doped indium oxide (ITO) on n-type silicon to form a structure of ITO/SiO{sub x}/n-Si heterojunction. The work function difference between ITO and n-Si materials essentially acts as the origin of built-in-field. Basing on the measured value of internal potential (V{sub bi} = 0.61 V) and high conversion efficiency (9.27%), we infer that this larger photo-generated holes tunneling occurs when a strong inversion layer at the c-Si surface appears. Also, the mixed electronic states in the ultra-thin intermediate region between ITO and n-Si play a defect-assisted tunneling.

  4. Preparation of ITO/SiOx/n-Si solar cells with non-decline potential field and hole tunneling by magnetron sputtering

    Science.gov (United States)

    Du, H. W.; Yang, J.; Li, Y. H.; Xu, F.; Xu, J.; Ma, Z. Q.

    2015-03-01

    Complete photo-generated minority carrier's quantum tunneling device under AM1.5 illumination is fabricated by depositing tin-doped indium oxide (ITO) on n-type silicon to form a structure of ITO/SiOx/n-Si heterojunction. The work function difference between ITO and n-Si materials essentially acts as the origin of built-in-field. Basing on the measured value of internal potential (Vbi = 0.61 V) and high conversion efficiency (9.27%), we infer that this larger photo-generated holes tunneling occurs when a strong inversion layer at the c-Si surface appears. Also, the mixed electronic states in the ultra-thin intermediate region between ITO and n-Si play a defect-assisted tunneling.

  5. Electrical properties of SAM-modified ITO surface using aromatic small molecules with double bond carboxylic acid groups for OLED applications

    International Nuclear Information System (INIS)

    Can, Mustafa; Havare, Ali Kemal; Aydın, Hasan; Yagmurcukardes, Nesli; Demic, Serafettin; Icli, Sıddık; Okur, Salih

    2014-01-01

    Graphical abstract: - Highlights: • We report that the performance of OLED consist of aromatic small molecules with double bond carboxylic acid groups on ITO surface. • The OLED devices were tested in terms of electrical and optical characteristics. • The I–V results show that OLEDs with SAM-modified ITO surface have lower turn on voltages than OLED configurations without SAMs. - Abstract: 5-[(3-Methylphenyl)(phenyl)amino]isophthalic acid (5-MePIFA) and 5-(diphenyl)amino]isophthalic acid (5-DPIFA) organic molecules were synthesized to form self-assembled monolayer on indium tin oxide (ITO) anode to enhance hole transport from ITO to organic hole transport layers such as TPD. The modified surface was characterized by scanning tunneling microscopy (STM). The change in the surface potential was measured by Kelvin probe force microscopy (KPFM). Our Kelvin probe force microscopy (KPFM) measurements showed that the surface potentials increased more than 100 mV with reference to bare indium tin-oxide. The results show that the threshold voltage on OLEDs with modified ITO is lowered significantly compared to OLEDs with unmodified ITO. The hole mobility of TPD has been estimated using space–charge-limited current measurements (SCLC)

  6. Electrical properties of SAM-modified ITO surface using aromatic small molecules with double bond carboxylic acid groups for OLED applications

    Energy Technology Data Exchange (ETDEWEB)

    Can, Mustafa [Izmir Katip Celebi University, Faculty of Engineering, Department of Engineering Sciences, Çiğli, Izmir (Turkey); Havare, Ali Kemal [Toros University, Faculty of Engineering, Electric and Electronic Department, Mersin (Turkey); Aydın, Hasan; Yagmurcukardes, Nesli [Izmir Institute of Technology, Material Science and Engineering, Izmir (Turkey); Demic, Serafettin [Izmir Katip Celebi University, Faculty of Engineering, Department of Material Science and Engineering, Çiğli, Izmir (Turkey); Icli, Sıddık [Ege University, Solar Energy Institute, Izmir (Turkey); Okur, Salih, E-mail: salih.okur@ikc.edu.tr [Izmir Katip Celebi University, Faculty of Engineering, Department of Material Science and Engineering, Çiğli, Izmir (Turkey)

    2014-09-30

    Graphical abstract: - Highlights: • We report that the performance of OLED consist of aromatic small molecules with double bond carboxylic acid groups on ITO surface. • The OLED devices were tested in terms of electrical and optical characteristics. • The I–V results show that OLEDs with SAM-modified ITO surface have lower turn on voltages than OLED configurations without SAMs. - Abstract: 5-[(3-Methylphenyl)(phenyl)amino]isophthalic acid (5-MePIFA) and 5-(diphenyl)amino]isophthalic acid (5-DPIFA) organic molecules were synthesized to form self-assembled monolayer on indium tin oxide (ITO) anode to enhance hole transport from ITO to organic hole transport layers such as TPD. The modified surface was characterized by scanning tunneling microscopy (STM). The change in the surface potential was measured by Kelvin probe force microscopy (KPFM). Our Kelvin probe force microscopy (KPFM) measurements showed that the surface potentials increased more than 100 mV with reference to bare indium tin-oxide. The results show that the threshold voltage on OLEDs with modified ITO is lowered significantly compared to OLEDs with unmodified ITO. The hole mobility of TPD has been estimated using space–charge-limited current measurements (SCLC)

  7. Single sheet iron oxides

    DEFF Research Database (Denmark)

    Yin, Zhou

    profile with reversible reduction and oxidation, suggesting the formation of FeII-OH/O-FeIII clusters as that in GRs were formed on the ITO electrode (trichloroethylene (TCE), tetrachloride (CT) and 4-chlorophenol are used to test...

  8. Growth Related Carrier Mobility Enhancement of Pentacene Thin-Film Transistors with High-k Oxide Gate Dielectric

    International Nuclear Information System (INIS)

    Ai-Fang, Yu; Qiong, Qi; Peng, Jiang; Chao, Jiang

    2009-01-01

    Carrier mobility enhancement from 0.09 to 0.59 cm 2 /Vs is achieved for pentacene-based thin-film transistors (TFTs) by modifying the HfO 2 gate dielectric with a polystyrene (PS) thin film. The improvement of the transistor's performance is found to be strongly related to the initial film morphologies of pentacene on the dielectrics. In contrast to the three-dimensional island-like growth mode on the HfO 2 surface, the Stranski-Krastanov growth mode on the smooth and nonpolar PS/HfO 2 surface is believed to be the origin of the excellent carrier mobility of the TFTs. A large well-connected first monolayer with fewer boundaries is formed via the Stranski–Krastanov growth mode, which facilitates a charge transport parallel to the substrate and promotes higher carrier mobility. (cross-disciplinary physics and related areas of science and technology)

  9. Near interface traps in SiO{sub 2}/4H-SiC metal-oxide-semiconductor field effect transistors monitored by temperature dependent gate current transient measurements

    Energy Technology Data Exchange (ETDEWEB)

    Fiorenza, Patrick; La Magna, Antonino; Vivona, Marilena; Roccaforte, Fabrizio [Consiglio Nazionale delle Ricerche-Istituto per la Microelettronica e Microsistemi (CNR-IMM), Strada VIII 5, Zona Industriale 95121 Catania (Italy)

    2016-07-04

    This letter reports on the impact of gate oxide trapping states on the conduction mechanisms in SiO{sub 2}/4H-SiC metal-oxide-semiconductor field effect transistors (MOSFETs). The phenomena were studied by gate current transient measurements, performed on n-channel MOSFETs operated in “gate-controlled-diode” configuration. The measurements revealed an anomalous non-steady conduction under negative bias (V{sub G} > |20 V|) through the SiO{sub 2}/4H-SiC interface. The phenomenon was explained by the coexistence of a electron variable range hopping and a hole Fowler-Nordheim (FN) tunnelling. A semi-empirical modified FN model with a time-depended electric field is used to estimate the near interface traps in the gate oxide (N{sub trap} ∼ 2 × 10{sup 11} cm{sup −2}).

  10. Improvement of optical and electrical properties of indium tin oxide layer of GaN-based light-emitting diode by surface plasmon in silver nanoparticles

    International Nuclear Information System (INIS)

    Cho, Chu-Young; Hong, Sang-Hyun; Park, Seong-Ju

    2015-01-01

    We report on the effect of silver (Ag) nanoparticles on the optical transmittance and electrical conductivity of indium tin oxide (ITO) transparent conducting layer deposited on p-GaN layer of light-emitting diodes (LEDs). The sheet resistance of ITO and the series resistance of LEDs were decreased due to the increased electrical conductivity of ITO by Ag nanoparticles, compared with those of the LEDs with a bare ITO only. The ITO transmittance was also improved by localized surface plasmon resonance between the incident light and the randomly distributed Ag nanoparticles on ITO. The optical output power of LEDs with Ag nanoparticles on ITO was increased by 16% at 20 mA of injection current. - Highlights: • We studied the effect of Ag nanoparticles deposited on ITO on the properties of LED. • The optical power of LED and transmittance of ITO were improved by Ag surface plasmon. • The electrical conductivity of ITO was increased by Ag nanoparticles

  11. Dependence of plasma treatment of ITO electrode films on electrical and optical properties of polymer light-emitting diodes

    International Nuclear Information System (INIS)

    Kim, Seung Ho; Baek, Seung Jun; Chang, Ho Jung; Chang, Young Chul

    2012-01-01

    Polymer light-emitting diodes (PLEDs) having indium tin oxide (ITO)/PEDOT:PSS [poly(3,4-ethylenedioxythiophene)-polystyrene sulfonate]/PVK [poly-vinylcarbazole]:PFO-poss [poly(9,9-dioctylfluorene) end capped by polyhedral oligomeric silsesquioxane]/TPBI [2,2',2''-(1,3,5-benzinetriyl)-tris(1-phenyl-1-H-benzimidazole)]/LiF/Al structures were prepared on plasma-treated ITO/glass substrates using spin-coating and thermal evaporation methods. The effects of the plasma treatment on the ITO films to the optical and electrical properties of the PLEDs were examined. The sheet resistance of the ITO films decreased with an increasing radio frequency (RF) plasma intensity from 20 to 200 W under a 20 mTorr Ar + O 2 gas (50:50 vol.%) pressure. The work function of the ITO films without plasma treatment was 4.97 eV, and increased to about 5.16-5.23 eV after the plasma treatment of the films. The surface roughness improved with increasing plasma intensities. The luminance and current efficiency of the PLEDs were improved when the devices were prepared on the plasma-treated ITO/glass substrates. The maximum current density and luminance for the PLEDs was obtained at a 150-W RF plasma intensity; they were 310 mA cm -2 and 2535 cd m -2 at 9 V, respectively. The Commission Internationale d'Eclairage (CIE) color coordinates were found to be x, y = 0.17, 0.06-0.07, showing a good blue color. (Copyright copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  12. A thermalization energy analysis of the threshold voltage shift in amorphous indium gallium zinc oxide thin film transistors under simultaneous negative gate bias and illumination

    Energy Technology Data Exchange (ETDEWEB)

    Flewitt, A. J., E-mail: ajf@eng.cam.ac.uk [Electrical Engineering Division, Cambridge University, J J Thomson Avenue, Cambridge CB3 0FA (United Kingdom); Powell, M. J. [252, Valley Drive, Kendal LA9 7SL (United Kingdom)

    2014-04-07

    It has been previously observed that thin film transistors (TFTs) utilizing an amorphous indium gallium zinc oxide (a-IGZO) semiconducting channel suffer from a threshold voltage shift when subjected to a negative gate bias and light illumination simultaneously. In this work, a thermalization energy analysis has been applied to previously published data on negative bias under illumination stress (NBIS) in a-IGZO TFTs. A barrier to defect conversion of 0.65–0.75 eV is extracted, which is consistent with reported energies of oxygen vacancy migration. The attempt-to-escape frequency is extracted to be 10{sup 6}−10{sup 7} s{sup −1}, which suggests a weak localization of carriers in band tail states over a 20–40 nm distance. Models for the NBIS mechanism based on charge trapping are reviewed and a defect pool model is proposed in which two distinct distributions of defect states exist in the a-IGZO band gap: these are associated with states that are formed as neutrally charged and 2+ charged oxygen vacancies at the time of film formation. In this model, threshold voltage shift is not due to a defect creation process, but to a change in the energy distribution of states in the band gap upon defect migration as this allows a state formed as a neutrally charged vacancy to be converted into one formed as a 2+ charged vacancy and vice versa. Carrier localization close to the defect migration site is necessary for the conversion process to take place, and such defect migration sites are associated with conduction and valence band tail states. Under negative gate bias stressing, the conduction band tail is depleted of carriers, but the bias is insufficient to accumulate holes in the valence band tail states, and so no threshold voltage shift results. It is only under illumination that the quasi Fermi level for holes is sufficiently lowered to allow occupation of valence band tail states. The resulting charge localization then allows a negative threshold voltage

  13. Synthesis and Analysis of MnTiO3 Thin Films on ITO Coated Glass Substrates

    Science.gov (United States)

    Martin, Emerick; Sahiner, Mehmet-Alper

    Perovskites like Manganese Titanium Oxide have interesting chemical properties that may be advantageous to the development of p-n junction photovoltaic cells. Due to the limited understanding behind the compound, it is essential to know the characteristics of it when it is deposited in thin film form. The cells were created using pulsed laser deposition method for two separate mediums (first layers after ITO). ZnO was deposited onto ITO glass for the first sample. For the second sample, a layer of pure Molybdenum was deposited onto the ITO glass. The MnTiO3 was then deposited onto both samples. There was a target thickness of 1000 Angstroms, but ellipsometry shows that, for the Mo based sample, that film thickness was around 1500 Angstroms. There were inconclusive results for the ZnO based sample. The concentration of active carriers was measured using a Hall Effect apparatus for the Mo based sample. The XRD analyses were used to confirm the perovskite structure of the films. Measurements for photoelectric conversion efficiency were taken using a Keathley 2602 ScourceMeter indicated low values for efficiency. The structural information that is correlated with the low electrical performance of this sample will be discussed. SHU-NJSGC Summer 2015 Fellowship.

  14. Study of Ag/RGO/ITO sandwich structure for resistive switching behavior deposited on plastic substrate

    Science.gov (United States)

    Vartak, Rajdeep; Rag, Adarsh; De, Shounak; Bhat, Somashekhara

    2018-05-01

    We report here the use of facile and environmentally benign way synthesized reduced graphene oxide (RGO) for low-voltage non-volatile memory device as charge storing element. The RGO solutions have been synthesized using electrochemical exfoliation of battery electrode. The solution processed based RGO solution is suitable for large area and low-cost processing on plastic substrate. Room-temperature current-voltage characterisation has been carried out in Ag/RGO/ITO PET sandwich configuration to study the type of trap distribution. It is observed that in the low-voltage sweep, ohmic current is the main mechanism of current flow and trap filled/assisted conduction is observed at high-sweep voltage region. The Ag/RGO/ITO PET sandwich structure showed bipolar resistive switching behavior. These mechanisms can be analyzed based on oxygen availability and vacancies in the RGO giving rise to continuous least resistive path (conductive) and high resistance path along the structure. An Ag/RGO/ITO arrangement demonstrates long retention time with low operating voltage, low set/reset voltage, good ON/OFF ratio of 103 (switching transition between lower resistance state and higher resistance state and decent switching performance. The RGO memory showed decent results with an almost negligible degradation in switching properties which can be used for low-voltage and low-cost advanced flexible electronics.

  15. Transparent conducting thin films by co-sputtering of ZnO-ITO targets

    Energy Technology Data Exchange (ETDEWEB)

    Carreras, Paz; Antony, Aldrin; Roldan, Ruben; Nos, Oriol; Frigeri, Paolo Antonio; Asensi, Jose Miguel; Bertomeu, Joan [Grup d' Energia Solar, Universitat de Barcelona (Spain)

    2010-04-15

    Transparent and conductive Zn-In-Sn-O (ZITO) amorphous thin films have been deposited at room temperature by the rf magnetron co-sputtering of ITO and ZnO targets. Co-sputtering gives the possibility to deposit multicomponent oxide thin films with different compositions by varying the power to one of the targets. In order to make ZITO films with different Zn content, a constant rf power of 50 W was used for the ITO target, where as the rf power to ZnO target was varied from 25 W to 150 W. The as deposited films showed an increase in Zn content ratio from 17 to 67% as the power to ZnO target was increased from 25 to 150 W. The structural, electrical and optical properties of the as deposited films are reported. The films showed an average transmittance over 80% in the visible wavelength range. The electrical resistivity and optical band gap of the ZITO films were found to depend on the Zn content in the film. The ZITO films deposited at room temperature with lower Zn content ratios showed better optical transmission and electrical properties compared to ITO film. (copyright 2010 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  16. Interfacial behavior of resistive switching in ITO-PVK-Al WORM memory devices

    Science.gov (United States)

    Whitcher, T. J.; Woon, K. L.; Wong, W. S.; Chanlek, N.; Nakajima, H.; Saisopa, T.; Songsiriritthigul, P.

    2016-02-01

    Understanding the mechanism of resistive switching in a memory device is fundamental in order to improve device performance. The mechanism of current switching in a basic organic write-once read-many (WORM) memory device is investigated by determining the energy level alignments of indium tin oxide (ITO), poly(9-vinylcarbazole) (PVK) and aluminum (Al) using x-ray and ultraviolet photoelectron spectroscopy, current-voltage characterization and Auger depth profiling. The current switching mechanism was determined to be controlled by the interface between the ITO and the PVK. The electric field applied across the device causes the ITO from the uneven surface of the anode to form metallic filaments through the PVK, causing a shorting effect within the device leading to increased conduction. This was found to be independent of the PVK thickness, although the switch-on voltage was non-linearly dependent on the thickness. The formation of these filaments also caused the destruction of the interfacial dipole at the PVK-Al interface.

  17. Synthesis of [Ru3(μ3-NPh)(Br)(CO)9]- on self-assembled monolayers of di(3-aminopropyl)viologen/ITO surfaces and its application to photoelectrochemical cells

    International Nuclear Information System (INIS)

    Lee, Deok Yeon; Lee, Mi-Sun; Lim, Iseul; Kang, Soon Hyung; Nah, Yoon-Chae; Lee, Wonjoo; Han, Sung-Hwan

    2011-01-01

    Triruthenium carbonyl clusters {[Ru 3 (Br)(CO) 11 ] - (denoted as Ru-1), [Ru 3 (μ 2 -Br)(CO) 10 ] - (denoted as Ru-2), and [Ru 3 (μ 3 -NPh)(Br)(CO) 9 ] - (denoted as Ru-3)} were synthesized on di(3-aminopropyl)viologen (DAPV)/indium tin oxide (ITO) using a surface reaction in a ruthenium (III) carbonyl [Ru 3 (CO) 12 ] solution, and were applied to photoelectrochemical cells (PECs) at the molecular level. The formation of DAPV on ITO was realized in the form of self-assembled monolayers. Ru 3 (CO) 12 then easily reacted with the Br - of DAPV, and a mixture of Ru-1 and Ru-2 was formed on DAPV/ITO. Furthermore, Ru-3 was successfully anchored on DAPV/ITO by adding nitrosobenzene in order to react with Ru-2 on DAPV/ITO. The photocurrents of (Ru-1 and Ru-2)/DAPV/ITO and Ru-3/DAPV/ITO in PECs at the molecular level were 6.3 nA cm -2 and 8.6 nA cm -2 , respectively. The quantum yield of Ru-3/DAPV/ITO was ∼0.8%. Time-resolved photoluminescence spectroscopy and emission spectroscopy were recorded to bring out the photoinduced charge transfer process from ruthenium clusters to DAPV.

  18. Reversible degradation in ITO-containing organic photovoltaics under concentrated sunlight

    NARCIS (Netherlands)

    Galagan, Y.O.; Mescheloff, A.; Veenstra, S.C.; Andriessen, H.A.J.M.; Katz, E.A.

    2015-01-01

    Stabilities of ITO-containing and ITO-free organic solar cells were investigated under simulated AM 1.5G illumination and under concentrated natural sunlight. In both cases ITO-free devices exhibit high stability, while devices containing ITO show degradation of their photovoltaic performance. The

  19. Ag-Pd-Cu alloy inserted transparent indium tin oxide electrodes for organic solar cells

    International Nuclear Information System (INIS)

    Kim, Hyo-Joong; Seo, Ki-Won; Kim, Han-Ki; Noh, Yong-Jin; Na, Seok-In

    2014-01-01

    The authors report on the characteristics of Ag-Pd-Cu (APC) alloy-inserted indium tin oxide (ITO) films sputtered on a glass substrate at room temperature for application as transparent anodes in organic solar cells (OSCs). The effect of the APC interlayer thickness on the electrical, optical, structural, and morphological properties of the ITO/APC/ITO multilayer were investigated and compared to those of ITO/Ag/ITO multilayer electrodes. At the optimized APC thickness of 8 nm, the ITO/APC/ITO multilayer exhibited a resistivity of 8.55 × 10 −5 Ω cm, an optical transmittance of 82.63%, and a figure-of-merit value of 13.54 × 10 −3 Ω −1 , comparable to those of the ITO/Ag/ITO multilayer. Unlike the ITO/Ag/ITO multilayer, agglomeration of the metal interlayer was effectively relieved with APC interlayer due to existence of Pd and Cu elements in the thin region of the APC interlayer. The OSCs fabricated on the ITO/APC/ITO multilayer showed higher power conversion efficiency than that of OSCs prepared on the ITO/Ag/ITO multilayer below 10 nm due to the flatness of the APC layer. The improved performance of the OSCs with ITO/APC/ITO multilayer electrodes indicates that the APC alloy interlayer prevents the agglomeration of the Ag-based metal interlayer and can decrease the thickness of the metal interlayer in the oxide-metal-oxide multilayer of high-performance OSCs

  20. On-chip nanostructuring and impedance trimming of transparent and flexible ITO electrodes by laser induced coherent sub-20 nm cuts

    Energy Technology Data Exchange (ETDEWEB)

    Afshar, Maziar, E-mail: m.afshar@lmm.uni-saarland.de [Lab for Micromechanics, Microfluidics, and Microactuators, Saarland University, Saarbrücken D-66123 (Germany); Leber, Moritz [Lab for Micromechanics, Microfluidics, and Microactuators, Saarland University, Saarbrücken D-66123 (Germany); Poppendieck, Wigand [Department of Medical Engineering & Neuroprosthetics, Fraunhofer Institute for Biomedical Engineering, St. Ingbert D-66386 (Germany); König, Karsten [Lab for Biophotonics and Laser Technology, Saarland University, Saarbrücken D-66123 (Germany); Seidel, Helmut; Feili, Dara [Lab for Micromechanics, Microfluidics, and Microactuators, Saarland University, Saarbrücken D-66123 (Germany)

    2016-01-01

    Graphical abstract: - Highlights: • A novel method to make sub-20 nm nanopatterning in ITO thin films by laser writing. • A novel way to functionalize ITO bio-electrodes to yield near-field polarizing feature. • A basic characterization of ITO electrodes was performed by impedance spectroscopy. • Presentation of simulations and possible theoretical approaches to explain the results. - Abstract: In this work, the effect of laser-induced nanostructuring of transparent indium tin oxide (ITO) electrodes on flexible glass is investigated. Multi-electrode arrays (MEA) for electrical and optical characterization of biological cells were fabricated using standard MEMS technologies. Optimal sputter parameters concerning oxygen flow, sputter power and ambient pressure for ITO layers with both good optical and electrical properties were determined. Afterwards, coherent sub-20 nm wide and 150 nm deep nanocuts of many micrometers in length were generated within the ITO electrodes by a sub-15 femtosecond (fs) pulsed laser. The influence of laser processing on the electrical and optical properties of electrodes was investigated. The electrochemical impedance of the manufactured electrodes was measured before and after laser modification using electrochemical impedance spectroscopy. A small reduction in electrode impedance was observed. These nanostructured electrodes show also polarizing effects by the visible spectrum.

  1. An oxidation-resistant indium tin oxide catalyst support for proton exchange membrane fuel cells

    Energy Technology Data Exchange (ETDEWEB)

    Chhina, H.; Campbell, S. [Ballard Power Systems Inc., 9000 Glenlyon Parkway, Burnaby, BC V5J 5J8 (Canada); Kesler, O. [Department of Mechanical Engineering, University of British Columbia, Vancouver, BC, V6T 1Z4 (Canada)

    2006-10-27

    The oxidation of carbon catalyst supports causes degradation in catalyst performance in proton exchange membrane fuel cells (PEMFCs). Indium tin oxide (ITO) is considered as a candidate for an alternative catalyst support. The electrochemical stability of ITO was studied by use of a rotating disk electrode (RDE). Oxidation cycles between +0.6 and +1.8V were applied to ITO supporting a Pt catalyst. Cyclic voltammograms (CVs) both before and after the oxidation cycles were obtained for Pt on ITO, Hispec 4000 (a commercially available catalyst), and 40wt.% Pt dispersed in-house on Vulcan XC-72R. Pt on ITO showed significantly better electrochemical stability, as determined by the relative change in electrochemically active surface area after cycling. Hydrogen desorption peaks in the CVs existed even after 100 cycles from 0.6 to 1.8V for Pt on ITO. On the other hand, most of the active surface area was lost after 100 cycles of the Hispec 4000 catalyst. The 40wt.% Pt on Vulcan made in-house also lost most of its active area after only 50 cycles. Pt on ITO was significantly more electrochemically stable than both Hispec 4000 and Pt on Vulcan XC-72R. In this study, it was found that the Pt on ITO had average crystallite sizes of 13nm for Pt and 38nm for ITO. Pt on ITO showed extremely high thermal stability, with only {approx}1wt.% loss of material for ITO versus {approx}57wt.% for Hispec 4000 on heating to 1000{sup o}C. The TEM data show Pt clusters dispersed on small crystalline ITO particles. The SEM data show octahedral shaped ITO particles supporting Pt. (author)

  2. IR spectroscopy at the ITO-organic interface

    Energy Technology Data Exchange (ETDEWEB)

    Alt, Milan [Karlsruher Institut fuer Technologie, Karlsruhe (Germany); Shazada, Ahmad [Max-Planck Institut fuer Polymerforschung, Mainz (Germany); Tamanai, Akemi; Trollmann, Jens; Glaser, Tobias; Beck, Sebastian; Tengeler, Sven; Pucci, Annemarie [Kirchhoff-Institut fuer Physik, Heidelberg (Germany)

    2012-07-01

    Thin films of P3HT have been prepared by spin coating and electrooxidative polymerization on platinum- and ITO-coated substrates. Additionally, P3HT-films on silicon substrates have been prepared by spin coating only. The measured IR spectra of the spin coated films allowed for an elaboration of a detailed optical model for P3HT, which has been used to simulate IR reflection-absorption spectra on ITO and Pt substrates. Comparison of simulated spectra with measurements revealed no substrate influence on the IR spectra for the spincoated films. In case of spincoated P3HT-films on ITO-substrate, the obtained IR spectra correspond to simulation data very well up to 6000 wavenumbers. In the electropolymerized P3HT films we have identified residuals of the electrolyte ionic liquid, acting as dopand for P3HT. While IR spectra of the electropolymerized P3HT films on Pt substrate could be explained reasonably well as a superposition of chemically doped P3HT and the ionic electrolyte, the IR spectra of electropolymerized P3HT films on ITO substrates showed strongly deposition-time dependent deviations. These were most likely related to varying properties of the ITO surface between reference and sample measurement due to an interaction of ITO and the electrolyte at the film-substrate interface.

  3. Influence of sputtering power on the optical properties of ITO thin films

    Energy Technology Data Exchange (ETDEWEB)

    K, Aijo John; M, Deepak, E-mail: manju.thankamoni@gmail.com; T, Manju, E-mail: manju.thankamoni@gmail.com [Department of Physics, Sree Sankara College, Kalady P. O., Ernakulam Dist., Kerala (India); Kumar, Vineetha V. [Dept. of Physics, K. E. College, Mannanam, Kottayam Dist., Kerala (India)

    2014-10-15

    Tin doped indium oxide films are widely used in transparent conducting coatings such as flat panel displays, crystal displays and in optical devices such as solar cells and organic light emitting diodes due to the high electrical resistivity and optical transparency in the visible region of solar spectrum. The deposition parameters have a commendable influence on the optical and electrical properties of the thin films. In this study, ITO thin films were prepared by RF magnetron sputtering. The properties of the films prepared under varying sputtering power were compared using UV- visible spectrophotometry. Effect of sputtering power on the energy band gap, absorption coefficient and refractive index are investigated.

  4. Roll-to-Roll sputtered ITO/Cu/ITO multilayer electrode for flexible, transparent thin film heaters and electrochromic applications.

    Science.gov (United States)

    Park, Sung-Hyun; Lee, Sang-Mok; Ko, Eun-Hye; Kim, Tae-Ho; Nah, Yoon-Chae; Lee, Sang-Jin; Lee, Jae Heung; Kim, Han-Ki

    2016-09-22

    We fabricate high-performance, flexible, transparent electrochromic (EC) films and thin film heaters (TFHs) on an ITO/Cu/ITO (ICI) multilayer electrode prepared by continuous roll-to-roll (RTR) sputtering of ITO and Cu targets. The RTR-sputtered ICI multilayer on a 700 mm wide PET substrate at room temperature exhibits a sheet resistance of 11.8 Ω/square and optical transmittance of 73.9%, which are acceptable for the fabrication of flexible and transparent EC films and TFHs. The effect of the Cu interlayer thickness on the electrical and optical properties of the ICI multilayer was investigated in detail. The bending and cycling fatigue tests demonstrate that the RTR-sputtered ICI multilayer was more flexible than a single ITO film because of high strain failure of the Cu interlayer. The flexible and transparent EC films and TFHs fabricated on the ICI electrode show better performances than reference EC films and TFHs with a single ITO electrode. Therefore, the RTR-sputtered ICI multilayer is the best substitute for the conventional ITO film electrode in order to realize flexible, transparent, cost-effective and large-area EC devices and TFHs that can be used as flexible and smart windows.

  5. Hipomelanose de Ito - relato de um caso

    Directory of Open Access Journals (Sweden)

    Adriana S. de Almeida

    2001-02-01

    Full Text Available Objetivo: Os autores têm como objetivo relatar um caso de hipomelanose de Ito (HI, uma síndrome neurocutânea rara, com alterações neurológicas e cromossômicas associadas ao comprometimento cutâneo e pneumonias de repetição. Relato do caso: Este relato é referente a um paciente masculino, 1 ano e 11 meses, internado no Hospital Universitário São Vicente de Paulo por broncopneumonia bilateral. Ao exame foram observadas máculas hipocrômicas na pele compatíveis com HI, além de atraso do desenvolvimento neuropsicomotor. O paciente foi submetido à biópsia incisional de pele das lesões do abdômen, eletroencefalograma, ressonância magnética e estudo citogenético. Resultados: Os exames histológico e imunoistoquímico evidenciaram ausência de melanina e diminuição de melanócitos em áreas focais da epiderme, respectivamente. O eletroencefalograma apresentou disfunção córtico-subcortical difusa. A ressonância magnética do encéfalo foi compatível com cisto aracnoídeo em região temporal. O cariótipo evidenciou mosaicismo cromossômico com uma linhagem normal (46,XY e uma linhagem celular que apresentava deleção intersticial nas bandas 22.2 - 24.2 do braço longo do cromossomo 10 (25%. Conclusões: Os autores, com o presente estudo, destacam a importância das lesões de pele na definição etiológica das desordens neuropediátricas.

  6. Effect of Coercive Voltage and Charge Injection on Performance of a Ferroelectric-Gate Thin-Film Transistor

    Directory of Open Access Journals (Sweden)

    P. T. Tue

    2013-01-01

    Full Text Available We adopted a lanthanum oxide capping layer between semiconducting channel and insulator layers for fabrication of a ferroelectric-gate thin-film transistor memory (FGT which uses solution-processed indium-tin-oxide (ITO and lead-zirconium-titanate (PZT film as a channel layer and a gate insulator, respectively. Good transistor characteristics such as a high “on/off” current ratio, high channel mobility, and a large memory window of 108, 15.0 cm2 V−1 s−1, and 3.5 V were obtained, respectively. Further, a correlation between effective coercive voltage, charge injection effect, and FGT’s memory window was investigated. It is found that the charge injection from the channel to the insulator layer, which occurs at a high electric field, dramatically influences the memory window. The memory window’s enhancement can be explained by a dual effect of the capping layer: (1 a reduction of the charge injection and (2 an increase of effective coercive voltage dropped on the insulator.

  7. A high performance gate drive for large gate turn off thyristors

    Energy Technology Data Exchange (ETDEWEB)

    Szilagyi, C.P.

    1993-01-01

    Past approaches to gate turn-off (GTO) gating are application oriented, inefficient and dissipate power even when inactive. They allow the gate to avalanch, and do not reduce GTO turn-on and turn-off losses. A new approach is proposed which will allow modular construction and adaptability to large GTOs in the 50 amp to 2000 amp range. The proposed gate driver can be used in large voltage source and current source inverters and other power converters. The approach consists of a power metal-oxide-silicon field effect transistor (MOSFET) technology gating unit, with associated logic and supervisory circuits and an isolated flyback converter as the dc power source for the gating unit. The gate driver formed by the gating unit and the flyback converter is designed for 4000 V isolation. Control and supervisory signals are exchanged between the gate driver and the remote control system via fiber optics. The gating unit has programmable front-porch current amplitude and pulse-width, programmable closed-loop controlled back-porch current, and a turn-off switch capable of supplying negative gate current at demand as a function of peak controllable forward anode current. The GTO turn-on, turn-off and gate avalanch losses are reduced to a minimum. The gate driver itself has minimum operating losses. Analysis, design and practical realization are reported. 19 refs., 54 figs., 1 tab.

  8. Evaporation-Driven Deposition of ITO Thin Films from Aqueous Solutions with Low-Speed Dip-Coating Technique.

    Science.gov (United States)

    Ito, Takashi; Uchiyama, Hiroaki; Kozuka, Hiromitsu

    2017-05-30

    We suggest a novel wet coating process for preparing indium tin oxide (ITO) films from simple solutions containing only metal salts and water via evaporation-driven film deposition during low-speed dip coating. Homogeneous ITO precursor films were deposited on silica glass substrates from the aqueous solutions containing In(NO 3 ) 3 ·3H 2 O and SnCl 4 ·5H 2 O by dip coating at substrate withdrawal speeds of 0.20-0.50 cm min -1 and then crystallized by the heat treatment at 500-800 °C for 10-60 min under N 2 gas flow of 0.5 L min -1 . The ITO films heated at 600 °C for 30 min had a high optical transparency in the visible range and a good electrical conductivity. Multiple-coating ITO films obtained with five-times dip coating exhibited the lowest sheet (ρ S ) and volume (ρ V ) resistivities of 188 Ω sq -1 and 4.23 × 10 -3 Ω cm, respectively.

  9. ITO/Poly(Aniline/Sol-Gel Glass: An Optically Transparent, pH-Responsive Substrate for Supported Lipid Bilayers

    Directory of Open Access Journals (Sweden)

    Ahmed Al-Obeidi

    2013-01-01

    Full Text Available Described here is fabrication of a pH-sensitive, optically transparent transducer composed of a planar indium-tin oxide (ITO electrode overcoated with a poly(aniline (PANI thin film and a porous sol-gel layer. Adsorption of the PANI film renders the ITO electrode sensitive to pH, whereas the sol-gel spin-coated layer makes the upper surface compatible with fusion of phospholipid vesicles to form a planar supported lipid bilayer (PSLB. The response to changes in the pH of the buffer contacting the sol-gel/PANI/ITO electrode is pseudo-Nernstian with a slope of 52 mV/pH over a pH range of 4–9. Vesicle fusion forms a laterally continuous PSLB on the upper sol-gel surface that is fluid with a lateral lipid diffusion coefficient of 2.2 μm2/s measured by fluorescence recovery after photobleaching. Due to its lateral continuity and lack of defects, the PSLB blocks the pH response of the underlying electrode to changes in the pH of the overlying buffer. This architecture is simpler to fabricate than previously reported ITO electrodes derivatized for PSLB formation and should be useful for optical monitoring of proton transport across supported membranes derivatized with ionophores and ion channels.

  10. ITO films deposited by rf-PERTE on unheated polymer substrates--properties dependence on In-Sn alloy composition

    International Nuclear Information System (INIS)

    Nunes de Carvalho, C.; Lavareda, G.; Fortunato, E.; Vilarinho, P.; Amaral, A.

    2004-01-01

    The study of the influence of different tin concentrations in the In-Sn alloy on the properties of indium tin oxide (ITO) thin films deposited by radio frequency (rf) plasma enhanced reactive thermal evaporation (rf-PERTE) onto flexible polymer and window glass substrates at room temperature is presented. The polymer substrate used is polyethylene terephthalate (PET). The tin concentration in the source alloy varied in the range 5-20 wt.%. The average thickness of the ITO films is of about 90 nm. Results show that ITO thin films deposited on PET from the evaporation of a 85%In:15%Sn alloy exhibit the following characteristics: an average visible transmittance of 80% and an electrical resistivity of 1.6x10 -3 Ω cm. On glass the value of the average visible transmittance increases (85%) and the resistivity decreases to 7.6x10 -4 Ω cm. The electrical properties of ITO films on PET are largely affected by the low carrier mobility

  11. Multiple-stimuli responsive bioelectrocatalysis based on reduced graphene oxide/poly(N-isopropylacrylamide) composite films and its application in the fabrication of logic gates.

    Science.gov (United States)

    Wang, Lei; Lian, Wenjing; Yao, Huiqin; Liu, Hongyun

    2015-03-11

    In the present work, reduced graphene oxide (rGO)/poly(N-isopropylacrylamide) (PNIPAA) composite films were electrodeposited onto the surface of Au electrodes in a fast and one-step manner from an aqueous mixture of a graphene oxide (GO) dispersion and N-isopropylacrylamide (NIPAA) monomer solutions. Reflection-absorption infrared (IR) and Raman spectroscopies were employed to characterize the successful construction of the rGO/PNIPAA composite films. The rGO/PNIPAA composite films exhibited reversible potential-, pH-, temperature-, and sulfate-sensitive cyclic voltammetric (CV) on-off behavior to the electroactive probe ferrocenedicarboxylic acid (Fc(COOH)2). For instance, after the composite films were treated at -0.7 V for 7 min, the CV responses of Fc(COOH)2 at the rGO/PNIPAA electrodes were quite large at pH 8.0, exhibiting the on state. However, after the films were treated at 0 V for 30 min, the CV peak currents became much smaller, demonstrating the off state. The mechanism of the multiple-stimuli switchable behaviors for the system was investigated not only by electrochemical methods but also by scanning electron microscopy and X-ray photoelectron spectroscopy. The potential-responsive behavior for this system was mainly attributed to the transformation between rGO and GO in the films at different potentials. The film system was further used to realize multiple-stimuli responsive bioelectrocatalysis of glucose catalyzed by the enzyme of glucose oxidase and mediated by the electroactive probe of Fc(COOH)2 in solution. On the basis of this, a four-input enabled OR (EnOR) logic gate network was established.

  12. Impedance spectroscopy of heterojunction solar cell a-SiC/c-Si with ITO antireflection film investigated at different temperatures

    International Nuclear Information System (INIS)

    Šály, V; Pern, M; Janíček, F; Mikolášek, M; Packa, J; Huran, J

    2017-01-01

    Progressive smart photovoltaic technologies including heterostructures a-SiC/c-Si with ITO antireflection film are one of the prospective replacements of conventional photovoltaic silicon technology. Our paper is focused on the investigation of heterostructures a-SiC/c-Si provided with a layer of ITO (indium oxide/tin oxide 90/10 wt.%) which acts as a passivating and antireflection coating. Prepared photovoltaic cell structure was investigated at various temperatures and the influence of temperature on its operation was searched. The investigation of the dynamic properties of heterojunction PV cells was carried out using impedance spectroscopy. The equivalent AC circuit which approximates the measured impedance data was proposed. Assessment of the influence of the temperature on the operation of prepared heterostructure was carried out by analysis of the temperature dependence of AC equivalent circuit elements. (paper)

  13. Impedance spectroscopy of heterojunction solar cell a-SiC/c-Si with ITO antireflection film investigated at different temperatures

    Science.gov (United States)

    Šály, V.; Perný, M.; Janíček, F.; Huran, J.; Mikolášek, M.; Packa, J.

    2017-04-01

    Progressive smart photovoltaic technologies including heterostructures a-SiC/c-Si with ITO antireflection film are one of the prospective replacements of conventional photovoltaic silicon technology. Our paper is focused on the investigation of heterostructures a-SiC/c-Si provided with a layer of ITO (indium oxide/tin oxide 90/10 wt.%) which acts as a passivating and antireflection coating. Prepared photovoltaic cell structure was investigated at various temperatures and the influence of temperature on its operation was searched. The investigation of the dynamic properties of heterojunction PV cells was carried out using impedance spectroscopy. The equivalent AC circuit which approximates the measured impedance data was proposed. Assessment of the influence of the temperature on the operation of prepared heterostructure was carried out by analysis of the temperature dependence of AC equivalent circuit elements.

  14. Enhanced photocurrent in RuL2(NCS)2/di-(3-aminopropyl)-viologen/SnO2/ITO system

    International Nuclear Information System (INIS)

    Lee, Wonjoo; Kwak, Chang Gon; Mane, R.S.; Min, Sun Ki; Cai, Gangri; Ganesh, T.; Koo, Gumae; Chang, Jinho; Cho, Byung Won; Kim, Sei-Ki; Han, Sung-Hwan

    2008-01-01

    A Ru(2,2'-bipyridine-4,4'-dicarboxylic acid) 2 (NCS) 2 [RuL 2 (NCS) 2 ]/di-(3-aminopropyl)-viologen (DAPV)/tin oxide (SnO 2 ) system was prepared and applied to extensive photocurrent generation with its maximum surface area. The SnO 2 thin films on tin-doped indium oxide (ITO) were prepared using the chemical bath deposition method. Then, RuL 2 (NCS) 2 /DAPV on SnO 2 /ITO was easily prepared using self-assembled monolayers (SAMs). The photocurrent measurement of the system showed an excellent photocurrent of 20 nA cm -2 under the air mass 1.5 conditions (100 mW cm -2 ), which was increased by a factor of four compared to ones without SnO 2 layers

  15. Influence of a ZnO Buffer Layer on the Structural, Optical, and Electrical Properties of ITO/ZnO Bi-Layered Films

    International Nuclear Information System (INIS)

    Heo, Sung-Bo; Moon, Hyun-Joo; Kim, Daeil; Kim, Jun-Ho

    2016-01-01

    Sn-doped indium oxide (ITO) films and ITO/ZnO bi-layered films were prepared on polycarbonate substrates by RF magnetron sputtering without intentional substrate heating. In order to consider the influence of the ZnO thickness on the structural, optical, and electrical properties of ITO/ZnO films, the thickness of the ZnO buffer layer was varied from 5 to 20 nm. As-deposited ITO films show an average optical transmittance of 79.2% in the visible range and an electrical resistivity of 3.0×10"-"4 Ωcm, while films with a 5-nm thick ZnO buffer layer film show an electrical resistivity of 2.6×10"-"4 Ωcm and films with a 20-nm thick ZnO buffer layer show an optical transmittance of 82.0%. Based on the figure of merit, it is concluded that the ZnO buffer layer enhances the optical and electrical performance of ITO films used as transparent conducting oxides in flexible display applications.

  16. Physical and electrical characteristics of AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistors with rare earth Er2O3 as a gate dielectric

    International Nuclear Information System (INIS)

    Lin, Ray-Ming; Chu, Fu-Chuan; Das, Atanu; Liao, Sheng-Yu; Chou, Shu-Tsun; Chang, Liann-Be

    2013-01-01

    In this study, the rare earth erbium oxide (Er 2 O 3 ) was deposited using an electron beam onto an AlGaN/GaN heterostructure to fabricate metal-oxide-semiconductor high-electron-mobility transistors (MOS–HEMTs) that exhibited device performance superior to that of a conventional HEMT. Under similar bias conditions, the gate leakage currents of these MOS–HEMT devices were four orders of magnitude lower than those of conventional Schottky gate HEMTs. The measured sub-threshold swing (SS) and the effective trap state density (N t ) of the MOS–HEMT were 125 mV/decade and 4.3 × 10 12 cm −2 , respectively. The dielectric constant of the Er 2 O 3 layer in this study was 14, as determined through capacitance–voltage measurements. In addition, the gate–source reverse breakdown voltage increased from –166 V for the conventional HEMT to –196 V for the Er 2 O 3 MOS–HEMT. - Highlights: ► GaN/AlGaN/Er 2 O 3 metal-oxide semiconductor high electron mobility transistor ► Physical and electrical characteristics are presented. ► Electron beam evaporated Er 2 O 3 with excellent surface roughness ► Device exhibits reduced gate leakage current and improved I ON /I OFF ratio

  17. Physiological roles of the transient outward current Ito in normal and diseased hearts

    DEFF Research Database (Denmark)

    Cordeiro, Jonathan M.; Callø, Kirstine; Aschar-Sobbi, Roozbeh

    2016-01-01

    The Ca2+-independent transient outward K+ current (Ito) plays a critical role in underlying phase 1 of repolarization of the cardiac action potential and, as a result, is central to modulating excitation-contraction coupling and propensity for arrhythmia. Additionally, Ito and its molecular...... potential and the mechanisms by which Ito modulates excitation-contraction coupling. We also describe the effects of mutations in the subunits constituting the Ito channel as well as the role of Ito in the failing myocardium. Finally, we review pharmacological modulation of Ito and discuss the evidence...... constituents are consistently reduced in cardiac hypertrophy and heart failure. In this review, we discuss the physiological role of Ito as well as the molecular basis of this current in human and canine hearts, in which Ito has been thoroughly studied. In particular, we discuss the role of Ito in the action...

  18. Crystallinity, etchability, electrical and mechanical properties of Ga doped amorphous indium tin oxide thin films deposited by direct current magnetron sputtering

    International Nuclear Information System (INIS)

    Lee, Hyun-Jun; Song, Pung-Keun

    2014-01-01

    Indium tin oxide (ITO) and Ga-doped ITO (ITO:Ga) films were deposited on glass and polyimide (PI) substrates by direct current (DC) magnetron sputtering using different ITO:Ga targets (doped-Ga: 0, 0.1 and 2.9 wt.%). The films were deposited with a thickness of 50 nm and then post-annealed at various temperatures (room temperature-250 °C) in a vacuum chamber for 30 min. The amorphous ITO:Ga (0.1 wt.% Ga) films post-annealed at 220 °C exhibited relatively low resistivity (4.622x10 −4 Ω cm), indicating that the crystallinity of the ITO:Ga films decreased with increasing Ga content. In addition, the amorphous ITO:Ga films showed a better surface morphology, etchability and mechanical properties than the ITO films. - Highlights: • The Ga doped indium tin oxide (ITO) films crystallized at higher temperatures than the ITO films. • The amorphisation of ITO films increases with increasing Ga content. • Similar resistivity was observed between crystalline ITO and amorphous Ga doped ITO films. • Etching property of ITO film was improved with increasing Ga content

  19. Indium tin oxide-rod/single walled carbon nanotube based transparent electrodes for ultraviolet light-emitting diodes

    International Nuclear Information System (INIS)

    Yun, Min Ju; Kim, Hee-Dong; Kim, Kyeong Heon; Sung, Hwan Jun; Park, Sang Young; An, Ho-Myoung; Kim, Tae Geun

    2013-01-01

    In this paper, we report a transparent conductive oxide electrode scheme working for ultraviolet light-emitting diodes based on indium tin oxide (ITO)-rod and a single walled carbon nanotube (SWCNT) layer. We prepared four samples with ITO-rod, SWCNT/ITO-rod, ITO-rod/SWCNT, and SWCNT/ITO-rod/SWCNT structures for comparison. As a result, the sample with SWCNT/ITO-rod/SWCNT structures showed the highest transmittance over 90% at 280 nm and the highest Ohmic behavior (with sheet resistance of 5.33 kΩ/□) in the current–voltage characteristic curves. - Highlights: • Transparent conductive oxide (TCO) electrodes are proposed for UV light-emitting diodes. • These TCO electrodes are based on evaporated indium tin oxide (ITO)-rods. • Single walled carbon nanotube (SWCNT) layers are used as a current spreading layer. • The proposed TCO electrode structures show more than 90% transmittance at 280 nm

  20. Semiconductor growth on an oxide using a metallic surfactant and interface studies for potential gate stacks from first principles

    Energy Technology Data Exchange (ETDEWEB)

    Reyes Huamantinco, Andrei

    2008-05-09

    In this work the epitaxial growth of germanium on SrHfO{sub 3}(001), and the La{sub 2}Hf{sub 2}O{sub 7}/Si(001) and SrTiO{sub 3}/GaAs(001) interfaces were studied theoretically using the Projector-Augmented Wave (PAW) method. The PAW method is based on Density Functional Theory and it is implemented in the Car-Parrinello Ab-Initio Molecular Dynamics. The goal of the germanium growth on SrHfO{sub 3}(001) is to form a germanium film with low density of defects and smooth morphology, to be used as channel in a transistor. The feasibility of using a third material to achieve germanium layer-by-layer growth was investigated. The formation of an ordered strontium film on a SrO-terminated oxide substrate, to be used as template for germanium overgrowth, was studied. Deposition of germanium on the strontium 1ML template results in wetting and thus a change of the growth mode to layer-by-layer. The germanium surface is then passivated and a germanium compound is initially formed with strontium at the surface and interface. The interfacial structure and valence band offsets of the La{sub 2}Hf{sub 2}O{sub 7}/Si(001) crystalline system were studied. The SrTiO{sub 3}/GaAs(001) crystalline interfaces with unpinned Fermi level were investigated. (orig.)

  1. Patterning crystalline indium tin oxide by high repetition rate femtosecond laser-induced crystallization

    International Nuclear Information System (INIS)

    Cheng, Chung-Wei; Lin, Cen-Ying; Shen, Wei-Chih; Lee, Yi-Ju; Chen, Jenq-Shyong

    2010-01-01

    A method is proposed for patterning crystalline indium tin oxide (c-ITO) patterns on amorphous ITO (a-ITO) thin films by femtosecond laser irradiation at 80 MHz repetition rate followed by chemical etching. In the proposed approach, the a-ITO film is transformed into a c-ITO film over a predetermined area via the heat accumulation energy supplied by the high repetition rate laser beam, and the unirradiated a-ITO film is then removed using an acidic etchant solution. The fabricated c-ITO patterns are observed using scanning electron microscopy and cross-sectional transmission electron microscopy. The crystalline, optical, electrical properties were measured by X-ray diffraction, spectrophotometer, and four point probe station, respectively. The experimental results show that a high repetition rate reduces thermal shock and yields a corresponding improvement in the surface properties of the c-ITO patterns.

  2. Use of water vapor for suppressing the growth of unstable low-{kappa} interlayer in HfTiO gate-dielectric Ge metal-oxide-semiconductor capacitors with sub-nanometer capacitance equivalent thickness

    Energy Technology Data Exchange (ETDEWEB)

    Xu, J.P. [Department of Electronic Science and Technology, Huazhong University of Science and Technology, Wuhan, 430074 (China); Zou, X. [School of Electromachine and Architecture Engineering, Jianghan University, Wuhan, 430056 (China); Lai, P.T. [Department of Electrical and Electronic Engineering, University of Hong Kong, Pokfulam Road (Hong Kong)], E-mail: laip@eee.hku.hk; Li, C.X.; Chan, C.L. [Department of Electrical and Electronic Engineering, University of Hong Kong, Pokfulam Road (Hong Kong)

    2009-03-02

    Annealing of high-permittivity HfTiO gate dielectric on Ge substrate in different gases (N{sub 2}, NH{sub 3}, NO and N{sub 2}O) with or without water vapor is investigated. Analysis by transmission electron microscopy indicates that the four wet anneals can greatly suppress the growth of a GeO{sub x} interlayer at the dielectric/Ge interface, and thus decrease interface states, oxide charges and gate leakage current. Moreover, compared with the wet N{sub 2} anneal, the wet NH{sub 3}, NO and N{sub 2}O anneals decrease the equivalent permittivity of the gate dielectric due to the growth of a GeO{sub x}N{sub y} interlayer. Among the eight anneals, the wet N{sub 2} anneal produces the best dielectric performance with an equivalent relative permittivity of 35, capacitance equivalent thickness of 0.81 nm, interface-state density of 6.4 x 10{sup 11} eV{sup -1} cm{sup -2} and gate leakage current of 2.7 x 10{sup -4} A/cm{sup 2} at V{sub g} = 1 V.

  3. Use of water vapor for suppressing the growth of unstable low-κ interlayer in HfTiO gate-dielectric Ge metal-oxide-semiconductor capacitors with sub-nanometer capacitance equivalent thickness

    International Nuclear Information System (INIS)

    Xu, J.P.; Zou, X.; Lai, P.T.; Li, C.X.; Chan, C.L.

    2009-01-01

    Annealing of high-permittivity HfTiO gate dielectric on Ge substrate in different gases (N 2 , NH 3 , NO and N 2 O) with or without water vapor is investigated. Analysis by transmission electron microscopy indicates that the four wet anneals can greatly suppress the growth of a GeO x interlayer at the dielectric/Ge interface, and thus decrease interface states, oxide charges and gate leakage current. Moreover, compared with the wet N 2 anneal, the wet NH 3 , NO and N 2 O anneals decrease the equivalent permittivity of the gate dielectric due to the growth of a GeO x N y interlayer. Among the eight anneals, the wet N 2 anneal produces the best dielectric performance with an equivalent relative permittivity of 35, capacitance equivalent thickness of 0.81 nm, interface-state density of 6.4 x 10 11 eV -1 cm -2 and gate leakage current of 2.7 x 10 -4 A/cm 2 at V g = 1 V

  4. Comparison of nonpolar III-nitride vertical-cavity surface-emitting lasers with tunnel junction and ITO intracavity contacts

    KAUST Repository

    Leonard, J. T.

    2016-03-01

    We report on the lasing of III-nitride nonpolar, violet, vertical-cavity surface-emitting lasers (VCSELs) with III-nitride tunnel-junction (TJ) intracavity contacts and ion implanted apertures (IIAs). The TJ VCSELs are compared to similar VCSELs with tin-doped indium oxide (ITO) intracavity contacts. Prior to analyzing device results, we consider the relative advantages of III-nitride TJs for blue and green emitting VCSELs. The TJs are shown to be most advantageous for violet and UV VCSELs, operating near or above the absorption edge for ITO, as they significantly reduce the total internal loss in the cavity. However, for longer wavelength III-nitride VCSELs, TJs primarily offer the advantage of improved cavity design flexibility, allowing one to make the p-side thicker using a thick n-type III-nitride TJ intracavity contact. This offers improved lateral current spreading and lower loss, compare to using ITO and p-GaN, respectively. These aspects are particularly important for achieving high-power CW VCSELs, making TJs the ideal intracavity contact for any III-nitride VCSEL. A brief overview of III-nitride TJ growth methods is also given, highlighting the molecular-beam epitaxy (MBE) technique used here. Following this overview, we compare 12 mu m aperture diameter, violet emitting, TJ and ITO VCSEL experimental results, which demonstrate the significant improvement in differential efficiency and peak power resulting from the reduced loss in the TJ design. Specifically, the TJ VCSEL shows a peak power of similar to 550 mu W with a threshold current density of similar to 3.5 kA/cm(2), while the ITO VCSELs show peak powers of similar to 80 mu W and threshold current densities of similar to 7 kA/cm

  5. Comparison of nonpolar III-nitride vertical-cavity surface-emitting lasers with tunnel junction and ITO intracavity contacts

    KAUST Repository

    Leonard, J. T.; Young, E. C.; Yonkee, B. P.; Cohen, D. A.; Shen, Chao; Margalith, T.; Ng, Tien Khee; Denbaars, S. P.; Ooi, Boon S.; Speck, J. S.; Nakamura, S.

    2016-01-01

    We report on the lasing of III-nitride nonpolar, violet, vertical-cavity surface-emitting lasers (VCSELs) with III-nitride tunnel-junction (TJ) intracavity contacts and ion implanted apertures (IIAs). The TJ VCSELs are compared to similar VCSELs with tin-doped indium oxide (ITO) intracavity contacts. Prior to analyzing device results, we consider the relative advantages of III-nitride TJs for blue and green emitting VCSELs. The TJs are shown to be most advantageous for violet and UV VCSELs, operating near or above the absorption edge for ITO, as they significantly reduce the total internal loss in the cavity. However, for longer wavelength III-nitride VCSELs, TJs primarily offer the advantage of improved cavity design flexibility, allowing one to make the p-side thicker using a thick n-type III-nitride TJ intracavity contact. This offers improved lateral current spreading and lower loss, compare to using ITO and p-GaN, respectively. These aspects are particularly important for achieving high-power CW VCSELs, making TJs the ideal intracavity contact for any III-nitride VCSEL. A brief overview of III-nitride TJ growth methods is also given, highlighting the molecular-beam epitaxy (MBE) technique used here. Following this overview, we compare 12 mu m aperture diameter, violet emitting, TJ and ITO VCSEL experimental results, which demonstrate the significant improvement in differential efficiency and peak power resulting from the reduced loss in the TJ design. Specifically, the TJ VCSEL shows a peak power of similar to 550 mu W with a threshold current density of similar to 3.5 kA/cm(2), while the ITO VCSELs show peak powers of similar to 80 mu W and threshold current densities of similar to 7 kA/cm

  6. Over 2 Years of Outdoor Operational and Storage Stability of ITO-free, Fully Roll-to-Roll Fabricated Polymer Solar Cell Modules

    DEFF Research Database (Denmark)

    Angmo, Dechan; Krebs, Frederik C

    2015-01-01

    We report on the stability of large-area (100 cm2), low-cost, indium-tin-oxide (ITO)-free modules over two years (>17 500 h) under outdoor operational conditions in Denmark and under indoor storage condition by following ISOS-O-3 and ISOS-D-2 protocols. Irrespective of the testing regimes (storage...

  7. Round-Robin Studies on Roll-Processed ITO-free Organic Tandem Solar Cells Combined with Inter-Laboratory Stability Studies

    DEFF Research Database (Denmark)

    Livi, Francesco; Søndergaard, Roar R.; Andersen, Thomas Rieks

    2015-01-01

    Roll-processed, indium tin oxide (ITO)-free, flexible, organic tandem solar cells and modules have been realized and used in round-robin studies as well as in parallel inter-laboratory stability studies. The tandem cells/modules show no significant difference in comparison to their single...

  8. High-performance a-IGZO thin-film transistor with conductive indium-tin-oxide buried layer

    Science.gov (United States)

    Ahn, Min-Ju; Cho, Won-Ju

    2017-10-01

    In this study, we fabricated top-contact top-gate (TCTG) structure of amorphous indium-gallium-zinc oxide (a-IGZO) thin-film transistors (TFTs) with a thin buried conductive indium-tin oxide (ITO) layer. The electrical performance of a-IGZO TFTs was improved by inserting an ITO buried layer under the IGZO channel. Also, the effect of the buried layer's length on the electrical characteristics of a-IGZO TFTs was investigated. The electrical performance of the transistors improved with increasing the buried layer's length: a large on/off current ratio of 1.1×107, a high field-effect mobility of 35.6 cm2/Vs, a small subthreshold slope of 116.1 mV/dec, and a low interface trap density of 4.2×1011 cm-2eV-1 were obtained. The buried layer a-IGZO TFTs exhibited enhanced transistor performance and excellent stability against the gate bias stress.

  9. Influence of Binders and Solvents on Stability of Ru/RuOx Nanoparticles on ITO Nanocrystals as Li-O2 Battery Cathodes.

    Science.gov (United States)

    Vankova, Svetoslava; Francia, Carlotta; Amici, Julia; Zeng, Juqin; Bodoardo, Silvia; Penazzi, Nerino; Collins, Gillian; Geaney, Hugh; O'Dwyer, Colm

    2017-02-08

    Fundamental research on Li-O 2 batteries remains critical, and the nature of the reactions and stability are paramount for realising the promise of the Li-O 2 system. We report that indium tin oxide (ITO) nanocrystals with supported 1-2 nm oxygen evolution reaction (OER) catalyst Ru/RuO x nanoparticles (NPs) demonstrate efficient OER processes, reduce the recharge overpotential of the cell significantly and maintain catalytic activity to promote a consistent cycling discharge potential in Li-O 2 cells even when the ITO support nanocrystals deteriorate from the very first cycle. The Ru/RuO x nanoparticles lower the charge overpotential compared with those for ITO and carbon-only cathodes and have the greatest effect in DMSO electrolytes with a solution-processable F-free carboxymethyl cellulose (CMC) binder (ITO nanocrystalline materials in DMSO provide efficient Li 2 O 2 decomposition from within the cathode during cycling. We demonstrate that the ITO is actually unstable from the first cycle and is modified by chemical etching, but the Ru/RuO x NPs remain effective OER catalysts for Li 2 O 2 during cycling. The CMC binders avoid PVDF-based side-reactions and improve the cyclability. The deterioration of the ITO nanocrystals is mitigated significantly in cathodes with a CMC binder, and the cells show good cycle life. In mixed DMSO-EMITFSI [EMITFSI=1-ethyl-3-methylimidazolium bis(trifluoromethylsulfonyl)imide] ionic liquid electrolytes, the Ru/RuO x /ITO materials in Li-O 2 cells cycle very well and maintain a consistently very low charge overpotential of 0.5-0.8 V. © 2017 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

  10. Enhanced Performance of Photoelectrochemical Water Splitting with ITO@α-Fe2O3 Core-Shell Nanowire Array as Photoanode.

    Science.gov (United States)

    Yang, Jie; Bao, Chunxiong; Yu, Tao; Hu, Yingfei; Luo, Wenjun; Zhu, Weidong; Fu, Gao; Li, Zhaosheng; Gao, Hao; Li, Faming; Zou, Zhigang

    2015-12-09

    Hematite (α-Fe2O3) is one of the most promising candidates for photoelectrodes in photoelectrochemical water splitting system. However, the low visible light absorption coefficient and short hole diffusion length of pure α-Fe2O3 limits the performance of α-Fe2O3 photoelectrodes in water splitting. Herein, to overcome these drawbacks, single-crystalline tin-doped indium oxide (ITO) nanowire core and α-Fe2O3 nanocrystal shell (ITO@α-Fe2O3) electrodes were fabricated by covering the chemical vapor deposited ITO nanowire array with compact thin α-Fe2O3 nanocrystal film using chemical bath deposition (CBD) method. The J-V curves and IPCE of ITO@α-Fe2O3 core-shell nanowire array electrode showed nearly twice as high performance as those of the α-Fe2O3 on planar Pt-coated silicon wafers (Pt/Si) and on planar ITO substrates, which was considered to be attributed to more efficient hole collection and more loading of α-Fe2O3 nanocrystals in the core-shell structure than planar structure. Electrochemical impedance spectra (EIS) characterization demonstrated a low interface resistance between α-Fe2O3 and ITO nanowire arrays, which benefits from the well contact between the core and shell. The stability test indicated that the prepared ITO@α-Fe2O3 core-shell nanowire array electrode was stable under AM1.5 illumination during the test period of 40,000 s.

  11. Microprocessing of ITO and a-Si thin films using ns laser sources

    Science.gov (United States)

    Molpeceres, C.; Lauzurica, S.; Ocaña, J. L.; Gandía, J. J.; Urbina, L.; Cárabe, J.

    2005-06-01

    Selective ablation of thin films for the development of new photovoltaic panels and sensoring devices based on amorphous silicon (a-Si) is an emerging field, in which laser micromachining systems appear as appropriate tools for process development and device fabrication. In particular, a promising application is the development of purely photovoltaic position sensors. Standard p-i-n or Schottky configurations using transparent conductive oxides (TCO), a-Si and metals are especially well suited for these applications, appearing selective laser ablation as an ideal process for controlled material patterning and isolation. In this work a detailed study of laser ablation of a widely used TCO, indium-tin-oxide (ITO), and a-Si thin films of different thicknesses is presented, with special emphasis on the morphological analysis of the generated grooves. Excimer (KrF, λ = 248 nm) and DPSS lasers (λ = 355 and λ = 1064 nm) with nanosecond pulse duration have been used for material patterning. Confocal laser scanning microscopy (CLSM) and scanning electron microscopy (SEM) techniques have been applied for the characterization of the ablated grooves. Additionally, process parametric windows have been determined in order to assess this technology as potentially competitive to standard photolithographic processes. The encouraging results obtained, with well-defined ablation grooves having thicknesses in the order of 10 µm both in ITO and in a-Si, open up the possibility of developing a high-performance double Schottky photovoltaic matrix position sensor.

  12. Magnetic properties and microstructure investigation of electrodeposited FeNi/ITO films with different thickness

    International Nuclear Information System (INIS)

    Cao, Derang; Wang, Zhenkun; Feng, Erxi; Wei, Jinwu; Wang, Jianbo; Liu, Qingfang

    2013-01-01

    Highlights: •FeNi alloy thin films with different thickness deposited on Indium Tin Oxides (ITOs) conductive glass substrates by electrodeposition method. •A columnar crystalline microstructure and domain structure were obtained in FeNi thin films. •Particular FMR spectra of FeNi alloy with different thickness were studied. -- Abstract: FeNi alloy thin films with different thickness deposited on Indium Tin Oxides (ITOs) conductive glass substrates from the electrolytes by electrodeposition method have been studied by magnetic force microscopy (MFM), scanning electron microscopy (SEM) and ferromagnetic resonance (FMR) technique. For these films possessing an in-plane isotropy, the remanence decreases with the increasing of film thickness and the critical thickness that a stripe domain structure emerges is about 116 nm. Characteristic differences of the FMR spectra of different thickness are also observed. The results show that the resonance field at high measured angle increases firstly then decreases with increasing thickness, which may be related to the striped domain structure

  13. Interface Study of ITO/ZnO and ITO/SnO2 Complex Transparent Conductive Layers and Their Effect on CdTe Solar Cells

    Directory of Open Access Journals (Sweden)

    Tingliang Liu

    2013-01-01

    Full Text Available Transparent ITO/ZnO and ITO/SnO2 complex conductive layers were prepared by DC- and RF-magnetron sputtering. Their structure and optical and electronic performances were studied by XRD, UV/Vis Spectroscopy, and four-probe technology. The interface characteristic and band offset of the ITO/ZnO, ITO/SnO2, and ITO/CdS were investigated by Ultraviolet Photoelectron Spectroscopy (UPS and X-ray Photoelectron Spectroscopy (XPS, and the energy band diagrams have also been determined. The results show that ITO/ZnO and ITO/SnO2 films have good optical and electrical properties. The energy barrier those at the interface of ITO/ZnO and ITO/SnO2 layers are almost 0.4 and 0.44 eV, which are lower than in ITO/CdS heterojunctions (0.9 eV, which is beneficial for the transfer and collection of electrons in CdTe solar cells and reduces the minority carrier recombination at the interface, compared to CdS/ITO. The effects of their use in CdTe solar cells were studied by AMPS-1D software simulation using experiment values obtained from ZnO, ITO, and SnO2. From the simulation, we confirmed the increase of Eff, FF, Voc, and Isc by the introduction of ITO/ZnO and ITO/SnO2 layers in CdTe solar cells.

  14. All-Solution-Processed, Ambient Method for ITO-Free, Roll-Coated Tandem Polymer Solar Cells using Solution- Processed Metal Films

    DEFF Research Database (Denmark)

    Angmo, Dechan; Dam, Henrik Friis; Andersen, Thomas Rieks

    2014-01-01

    A solution-processed silver film is employed in the processing of top-illuminated indium-tin-oxide (ITO)-free polymer solar cells in single- and double-junction (tandem) structures. The nontransparent silver film fully covers the substrate and serves as the bottom electrode whereas a PEDOT...... in terms of surface morphological and topographical properties and to ITO in terms of flexibility. The slot–die coated Ag film demonstrates extremely low roughness (a root-meansquare roughness of 3 nm was measured over 240_320 mm2 area), is highly conductive (

  15. Stability Study of Flexible 6,13-Bis(triisopropylsilylethynylpentacene Thin-Film Transistors with a Cross-Linked Poly(4-vinylphenol/Yttrium Oxide Nanocomposite Gate Insulator

    Directory of Open Access Journals (Sweden)

    Jin-Hyuk Kwon

    2016-03-01

    Full Text Available We investigated the electrical and mechanical stability of flexible 6,13-bis(triisopropylsilylehtynylpentacene (TIPS-pentacene thin-film transistors (TFTs that were fabricated on polyimide (PI substrates using cross-linked poly(4-vinylphenol (c-PVP and c-PVP/yttrium oxide (Y2O3 nanocomposite films as gate insulators. Compared with the electrical characteristics of TIPS-pentacene TFTs with c-PVP insulators, the TFTs with c-PVP/Y2O3 nanocomposite insulators exhibited enhancements in the drain current and the threshold voltage due to an increase in the dielectric capacitance. In electrical stability experiments, a gradual decrease in the drain current and a negative shift in the threshold voltage occurred during prolonged bias stress tests, but these characteristic variations were comparable for both types of TFT. On the other hand, the results of mechanical bending tests showed that the characteristic degradation of the TIPS-pentacene TFTs with c-PVP/Y2O3 nanocomposite insulators was more critical than that of the TFTs with c-PVP insulators. In this study, the detrimental effect of the nanocomposite insulator on the mechanical stability of flexible TIPS-pentacene TFTs was found to be caused by physical adhesion of TIPS-pentacene molecules onto the rough surfaces of the c-PVP/Y2O3 nanocomposite insulator. These results indicate that the dielectric and morphological properties of polymeric nanocomposite insulators are significant when considering practical applications of flexible electronics operated at low voltages.

  16. Investigation of temperature stability of ITO films characteristics

    Directory of Open Access Journals (Sweden)

    Troyan Pavel

    2018-01-01

    Full Text Available The paper represents research of thermal stability of optical and electro-physical parameters of ITO films deposited using various techniques. Variation of optical and electro-physical parameters was recorded using spectroscopy, and Hall’s and four-probe measurements. The best thermal stability was demonstrated by ITO films deposited by metal target sputtering In(90%/Sn(10% in mixture of gases O2 (25% + Ar (75% with further annealing in air atmosphere. This enables to apply this technique for production of thin film transparent resistive elements capable to heat the translucent structures up to 100°C without deterioration of their parameters.

  17. Gas sensing at the nanoscale: engineering SWCNT-ITO nano-heterojunctions for the selective detection of NH3 and NO2 target molecules

    Science.gov (United States)

    Rigoni, F.; Drera, G.; Pagliara, S.; Perghem, E.; Pintossi, C.; Goldoni, A.; Sangaletti, L.

    2017-01-01

    The gas response of single-wall carbon nanotubes (SWCNT) functionalized with indium tin oxide (ITO) nanoparticles (NP) has been studied at room temperature and an enhanced sensitivity to ammonia and nitrogen dioxide is demonstrated. The higher sensitivity in the functionalized sample is related to the creation of nano-heterojunctions at the interface between SWCNT bundles and ITO NP. Furthermore, the different response of the two devices upon NO2 exposure provides a way to enhance also the selectivity. This behavior is rationalized by considering a gas sensing mechanism based on the build-up of space-charge layers at the junctions. Finally, full recovery of the signal after exposure to NO2 is achieved by UV irradiation for the functionalized sample, where the ITO NP can play a role to hinder the poisoning effects on SWCNT due to NO2 chemisorption.

  18. Synergetic effect of LaB6 and ITO nanoparticles on optical properties and thermal stability of poly(vinylbutyral) nanocomposite films

    International Nuclear Information System (INIS)

    Tang, Hongbo; Su, Yuchang; Hu, Te; Liu, Shidong; Mu, Shijia; Xiao, Lihua

    2014-01-01

    In this work, different compositions of lanthanum hexaboride (LaB 6 ) and tin-doped indium oxide (ITO) nanoparticles were doped into poly(vinylbutyral) (PVB) matrix to prepare PVB/LaB 6 -ITO nanocomposite (PLINC) films by a solution casting method. X-ray diffraction, Fourier transform infrared spectroscopy, field emission scanning electron microscopy, thermogravimetric analysis (TGA) and ultraviolet-visible-near infrared spectroscopy (UV-vis-NIR) were employed to characterize the PLINCs. The TGA and UV-vis-NIR results reveal that the nanocomposite films possessed outstanding thermal stability. The temperature where 5 % weight loss of the PVB matrix was improved after the addition of LaB 6 and ITO particles and the property for blocking near infrared light was also enhanced as compared with the case of pure PVB film. (orig.)

  19. Fast Switching ITO Free Electrochromic Devices

    DEFF Research Database (Denmark)

    Jensen, Jacob; Hösel, Markus; Kim, Inyoung

    2014-01-01

    devices with a response time of 2 s for an optical contrast of 27%. The other design utilizes an embedded silver grid electrode whereupon response times of 0.5 s for a 30% optical contrast are realized when oxidizing the device. A commercially available conductive poly(3,4-ethylenedioxythiophene):poly(4...

  20. Electron-electron scattering-induced channel hot electron injection in nanoscale n-channel metal-oxide-semiconductor field-effect-transistors with high-k/metal gate stacks

    International Nuclear Information System (INIS)

    Tsai, Jyun-Yu; Liu, Kuan-Ju; Lu, Ying-Hsin; Liu, Xi-Wen; Chang, Ting-Chang; Chen, Ching-En; Ho, Szu-Han; Tseng, Tseung-Yuen; Cheng, Osbert; Huang, Cheng-Tung; Lu, Ching-Sen

    2014-01-01

    This work investigates electron-electron scattering (EES)-induced channel hot electron (CHE) injection in nanoscale n-channel metal-oxide-semiconductor field-effect-transistors (n-MOSFETs) with high-k/metal gate stacks. Many groups have proposed new models (i.e., single-particle and multiple-particle process) to well explain the hot carrier degradation in nanoscale devices and all mechanisms focused on Si-H bond dissociation at the Si/SiO 2 interface. However, for high-k dielectric devices, experiment results show that the channel hot carrier trapping in the pre-existing high-k bulk defects is the main degradation mechanism. Therefore, we propose a model of EES-induced CHE injection to illustrate the trapping-dominant mechanism in nanoscale n-MOSFETs with high-k/metal gate stacks.

  1. Effective Passivation and Tunneling Hybrid a-SiOx(In) Layer in ITO/n-Si Heterojunction Photovoltaic Device.

    Science.gov (United States)

    Gao, Ming; Wan, Yazhou; Li, Yong; Han, Baichao; Song, Wenlei; Xu, Fei; Zhao, Lei; Ma, Zhongquan

    2017-05-24

    In this article, using controllable magnetron sputtering of indium tin oxide (ITO) materials on single crystal silicon at 100 °C, the optoelectronic heterojunction frame of ITO/a-SiO x (In)/n-Si is simply fabricated for the purpose of realizing passivation contact and hole tunneling. It is found that the gradation profile of indium (In) element together with silicon oxide (SiO x /In) within the ultrathin boundary zone between ITO and n-Si occurs and is characterized by X-ray photoelectron spectroscopy with the ion milling technique. The atomistic morphology and physical phase of the interfacial layer has been observed with a high-resolution transmission electron microscope. X-ray diffraction, Hall effect measurement, and optical transmittance with Tauc plot have been applied to the microstructure and property analyses of ITO thin films, respectively. The polycrystalline and amorphous phases have been verified for ITO films and SiO x (In) hybrid layer, respectively. For the quantum transport, both direct and defect-assisted tunneling of photogenerated holes through the a-SiO x (In) layer is confirmed. Besides, there is a gap state correlative to the indium composition and located at E v + 4.60 eV in the ternary hybrid a-SiO x (In) layer that is predicted by density functional theory of first-principles calculation, which acts as an "extended delocalized state" for direct tunneling of the photogenerated holes. The reasonable built-in potential (V bi = 0.66 V) and optimally controlled ternary hybrid a-SiO x (In) layer (about 1.4 nm) result in that the device exhibits excellent PV performance, with an open-circuit voltage of 0.540 V, a short-circuit current density of 30.5 mA/cm 2 , a high fill factor of 74.2%, and a conversion efficiency of 12.2%, under the AM 1.5 illumination. The work function difference between ITO (5.06 eV) and n-Si (4.31 eV) is determined by ultraviolet photoemission spectroscopy and ascribed to the essence of the built-in-field of the PV device

  2. Influence of indium tin oxide electrodes deposited at room temperature on the properties of organic light-emitting devices

    International Nuclear Information System (INIS)

    Satoh, Toshikazu; Fujikawa, Hisayoshi; Taga, Yasunori

    2005-01-01

    The influence of indium tin oxide (ITO) electrodes deposited at room temperature (ITO-RT) on the properties of organic light-emitting devices (OLEDs) has been studied. The OLED on the ITO-RT showed an obvious shorter lifetime and higher operating voltage than that on the conventional ITO electrode deposited at 573 K. The result of an in situ x-ray photoelectron spectroscopy analysis of the ITO electrode and the organic layer suggested that many of the hydroxyl groups that originate in the amorphous structure of the ITO-RT electrode oxidize the organic layer. The performance of the OLED on the ITO-RT is able to be explained by the oxidation of the organic layer

  3. Optimization of the parameters of ITO-CdTe photovoltaic cells

    Science.gov (United States)

    Adib, N.; Simashkevich, A. V.; Sherban, D. A.

    The effect of the surface state density at the interface and of the static charge in the intermediate oxide layer on the photoelectric parameters of solar cells based on ITO-nCdTe semiconductor-insulator-semiconductor structures is calculated theoretically. It is shown that,under AMI conditions, the conversion efficiency of such cells can be as high as 12 percent (short-circuit current, 23 mA/sq cm; open-circuit voltage, 0.65 V; fill factor, 0.8), provided that the surface states are acceptors and the oxide is negatively charged. It is concluded that surface states and the dielectric layer charge have a positive effect on the efficiency of solar cells of this type.

  4. Roll-coating fabrication of ITO-free flexible solar cells based on a non-fullerene small molecule acceptor

    DEFF Research Database (Denmark)

    Liu, Wenqing; Shi, Hangqi; Andersen, Thomas Rieks

    2015-01-01

    We report organic solar cells (OSCs) with non-fullerene small molecule acceptors (SMAs) prepared in large area via a roll coating process. We employ all solution-processed indium tin oxide (ITO)-free flexible substrates for inverted solar cells with a new SMA of F(DPP)(2)B-2. By utilizing poly(3......-hexylthiophene) as donor blended with F(DPP)(2)B-2 as acceptor, ITO-free large-area flexible SMA based OSCs were produced under ambient conditions with the use of slot-die coating and flexographic printing methods on a lab-scale compact roll-coater that is readily transferrable to roll-to-roll processing...

  5. Light trapping in a-Si/c-Si heterojunction solar cells by embedded ITO nanoparticles at rear surface

    Science.gov (United States)

    Dhar, Sukanta; Mandal, Sourav; Mitra, Suchismita; Ghosh, Hemanta; Mukherjee, Sampad; Banerjee, Chandan; Saha, Hiranmoy; Barua, A. K.

    2017-12-01

    The advantages of the amorphous silicon (a-Si)/crystalline silicon (c-Si) hetero junction technology are low temperature (oxide (ITO) nanoparticles embedded in amorphous silicon material at the rear side of the crystalline wafer. The nanoparticles were embedded in silicon to have higher scattering efficiency, as has been established by simulation studies. It has been shown that significant photocurrent enhancements (32.8 mA cm-2 to 35.1 mA cm-2) are achieved because of high scattering and coupling efficiency of the embedded nanoparticles into the silicon device, leading to an increase in efficiency from 13.74% to 15.22%. In addition, we have observed a small increase in open circuit voltage. This may be due to the surface passivation during the ITO nanoparticle formation with hydrogen plasma treatment. We also support our experimental results by simulation, with the help of a commercial finite-difference time-domain (FDTD) software solution.

  6. Palatization in Japanese Mimetics: Response to Mester and Ito.

    Science.gov (United States)

    Schourup, Lawrence; Tamori, Ikuhiro

    1992-01-01

    Mester and Ito's evidence for the phonological theory of Restricted Underspecification (RU) is refuted. Attention is focused on reduplicated forms; and it is concluded that, if there is only a rough and sporadic sound-syllable meaning association with palatization, the argument for RU is untenable. (12 references) (LB)

  7. Ito terms and the Maxwell field on the lattice

    International Nuclear Information System (INIS)

    D'Olivo, J.C.; Socolovsky, M.

    1988-01-01

    If lattice renormalization effects are ignored and the number of space-time dimensions is less than four, it is explicitly shown that the effective continuum action for the Maxwell field does not contain the so-called Ito terms. As is known, the qualitative reason for this result is the flat character of the integration measure

  8. NonMarkov Ito Processes with 1- state memory

    Science.gov (United States)

    McCauley, Joseph L.

    2010-08-01

    A Markov process, by definition, cannot depend on any previous state other than the last observed state. An Ito process implies the Fokker-Planck and Kolmogorov backward time partial differential eqns. for transition densities, which in turn imply the Chapman-Kolmogorov eqn., but without requiring the Markov condition. We present a class of Ito process superficially resembling Markov processes, but with 1-state memory. In finance, such processes would obey the efficient market hypothesis up through the level of pair correlations. These stochastic processes have been mislabeled in recent literature as 'nonlinear Markov processes'. Inspired by Doob and Feller, who pointed out that the ChapmanKolmogorov eqn. is not restricted to Markov processes, we exhibit a Gaussian Ito transition density with 1-state memory in the drift coefficient that satisfies both of Kolmogorov's partial differential eqns. and also the Chapman-Kolmogorov eqn. In addition, we show that three of the examples from McKean's seminal 1966 paper are also nonMarkov Ito processes. Last, we show that the transition density of the generalized Black-Scholes type partial differential eqn. describes a martingale, and satisfies the ChapmanKolmogorov eqn. This leads to the shortest-known proof that the Green function of the Black-Scholes eqn. with variable diffusion coefficient provides the so-called martingale measure of option pricing.

  9. Cyclic etching of tin-doped indium oxide using hydrogen-induced modified layer

    Science.gov (United States)

    Hirata, Akiko; Fukasawa, Masanaga; Nagahata, Kazunori; Li, Hu; Karahashi, Kazuhiro; Hamaguchi, Satoshi; Tatsumi, Tetsuya

    2018-06-01

    The rate of etching of tin-doped indium oxide (ITO) and the effects of a hydrogen-induced modified layer on cyclic, multistep thin-layer etching were investigated. It was found that ITO cyclic etching is possible by precisely controlling the hydrogen-induced modified layer. Highly selective etching of ITO/SiO2 was also investigated, and it was suggested that cyclic etching by selective surface adsorption of Si can precisely control the etch rates of ITO and SiO2, resulting in an almost infinite selectivity for ITO over SiO2 and in improved profile controllability.

  10. Electrical and optical properties of indium tin oxide/epoxy composite film

    International Nuclear Information System (INIS)

    Guo Xia; Guo Chun-Wei; Chen Yu; Su Zhi-Ping

    2014-01-01

    The electrical and optical properties of the indium tin oxide (ITO)/epoxy composite exhibit dramatic variations as functions of the ITO composition and ITO particle size. Sharp increases in the conductivity in the vicinity of a critical volume fraction have been found within the framework of percolation theory. A conductive and insulating transition model is extracted by the ITO particle network in the SEM image, and verified by the resistivity dependence on the temperature. The dependence of the optical transmittance on the particle size was studied. Further decreasing the ITO particle size could further improve the percolation threshold and light transparency of the composite film. (condensed matter: structural, mechanical, and thermal properties)

  11. In situ Observation of Direct Electron Transfer Reaction of Cytochrome c Immobilized on ITO Electrode Modified with 11-{2-[2-(2-Methoxyethoxy)ethoxy]ethoxy}undecylphosphonic Acid Self-assembled Monolayer Film by Electrochemical Slab Optical Waveguide Spectroscopy.

    Science.gov (United States)

    Matsuda, Naoki; Okabe, Hirotaka; Omura, Ayako; Nakano, Miki; Miyake, Koji

    2017-01-01

    To immobilize cytochrome c (cyt.c) on an ITO electrode while keeping its direct electron transfer (DET) functionality, the ITO electrode surface was modified with 11-{2-[2-(2-methoxyethoxy)ethoxy]ethoxy}undecylphosphonic acid (CH 3 O (CH 2 CH 2 O) 3 C 11 H 22 PO(OH) 2 , M-EG 3 -UPA) self-assembled monolayer (SAM) film. After a 100-times washing process to exchange a phosphate buffer saline solution surrounding cyt.c and ITO electrode to a fresh one, an in situ observation of visible absorption spectral change with slab optical waveguide (SOWG) spectroscopy showed that 87.7% of the cyt.c adsorbed on the M-EG 3 -UPA modified ITO electrode remained on the ITO electrode. The SOWG absorption spectra corresponding to oxidized and reduced cyt.c were observed with setting the ITO electrode potential at 0.3 and -0.3 V vs. Ag/AgCl, respectively, while probing the DET reaction between cyt.c and ITO electrode occurred. The amount of cyt.c was evaluated to be about 19.4% of a monolayer coverage based on the coulomb amount in oxidation and reduction peaks on cyclic voltammetry (CV) data. The CV peak current maintained to be 83.4% compared with the initial value for a M-EG 3 -UPA modified ITO electrode after 60 min continuous scan with 0.1 V/s between 0.3 and -0.3 V vs. Ag/AgCl.

  12. Electrical characteristics of AlO{sub x}N{sub y} prepared by oxidation of sub-10-nm-thick AlN films for MOS gate dielectric applications

    Energy Technology Data Exchange (ETDEWEB)

    Jeon, Sang Hun; Jang, Hyeon Woo; Kim, Hyun Soo; Noh, Do Young; Hwang, Hyun Sang [Kwangju Institute of Science and Technology, Kwangju (Korea, Republic of)

    2000-12-01

    In this research, the feasibility of ultrathin AlO{sub x}N{sub y} prepared by oxidation of sub 100-A-thick AlN thin films for metal-oxide-semiconductor (MOS) gate dielectric applications was investigated. Oxidation of 51-A-and 98-A-thick as-deposited AlN at 800 .deg. C was used to form 72-A-and 130-A-thick AlO{sub x}N{sub y}, respectively. Based on the capacitance-voltage (C-V) measurements of the MOS capacitor, the dielectric constants of 72 A-thick and 130 A-thick Al-oxynitride were 5.15 and 7, respectively. The leakage current of Al-oxynitride at low field was almost the same as that of thermal SiO{sub 2}. based on the CV data, the interface state density of Al-oxynitride was relatively higher than that of SiO{sub 2}. Although process optimization is still necessary, the Al-oxynitride exhibits some possibility for future MOS gate dielectric applications.

  13. Electrical characteristics of AlO sub x N sub y prepared by oxidation of sub-10-nm-thick AlN films for MOS gate dielectric applications

    CERN Document Server

    Jeon, S H; Kim, H S; Noh, D Y; Hwang, H S

    2000-01-01

    In this research, the feasibility of ultrathin AlO sub x N sub y prepared by oxidation of sub 100-A-thick AlN thin films for metal-oxide-semiconductor (MOS) gate dielectric applications was investigated. Oxidation of 51-A-and 98-A-thick as-deposited AlN at 800 .deg. C was used to form 72-A-and 130-A-thick AlO sub x N sub y , respectively. Based on the capacitance-voltage (C-V) measurements of the MOS capacitor, the dielectric constants of 72 A-thick and 130 A-thick Al-oxynitride were 5.15 and 7, respectively. The leakage current of Al-oxynitride at low field was almost the same as that of thermal SiO sub 2. based on the CV data, the interface state density of Al-oxynitride was relatively higher than that of SiO sub 2. Although process optimization is still necessary, the Al-oxynitride exhibits some possibility for future MOS gate dielectric applications.

  14. Pulsed laser deposition of semiconductor-ITO composite films on electric-field-applied substrates

    International Nuclear Information System (INIS)

    Narazaki, Aiko; Sato, Tadatake; Kawaguchi, Yoshizo; Niino, Hiroyuki; Yabe, Akira; Sasaki, Takeshi; Koshizaki, Naoto

    2002-01-01

    The DC electric-field effect on the crystallinity of II-VI semiconductor in composite systems has been investigated for CdS-ITO films fabricated via alternative pulsed laser deposition (PLD) of CdS and indium tin oxide (ITO) on electric-field-applied substrates. The alternative laser ablation was performed under irradiation of ArF excimer laser in mixture gas of helium and oxygen. The application of electric-field facilitated the preferential crystal-growth of CdS in nanometer scale at low pressure, whereas all the films grown without the field were amorphous. There is a large difference in the crystallization between the films grown on field-applied and heated substrates; the latter showed the crystal-growth with random orientations. This difference indicates that the existence of electric-field has an influence on the transformation from amorphous to crystalline phase of CdS. The driving force for the field-induced crystallization is also discussed in the light of the Joule heat

  15. Organic MEMS/NEMS-based high-efficiency 3D ITO-less flexible photovoltaic cells

    International Nuclear Information System (INIS)

    Kassegne, Sam; Moon, Kee; Martín-Ramos, Pablo; Majzoub, Mohammad; Őzturk, Gunay; Desai, Krishna; Parikh, Mihir; Nguyen, Bao; Khosla, Ajit; Chamorro-Posada, Pedro

    2012-01-01

    A novel approach based on three-dimensional (3D) architecture for polymeric photovoltaic cells made up of an array of sub-micron and nano-pillars which not only increase the area of the light absorbing surface, but also improve the carrier collection efficiency of bulk-heterojunction organic solar cells is presented. The approach also introduces coating of 3D anodes with a new solution-processable highly conductive transparent polymer (Orgacon™) that replaces expensive vacuum-deposited ITO (indium tin oxide) as well as the additional hole-collecting layer of conventional PEDOT:PSS (poly(3,4-ethylenedioxythiophene) poly(styrenesulfonate)). In addition, the described procedure is well suited to roll-to-roll high-throughput manufacturing. The high aspect-ratio 3D pillars which form the basis for this new architecture are patterned through micro-electromechanical-system- and nano-electromechanical-system-based processes. For the particular case of P3HT (poly(3-hexylthiophene)) and PCBM (phenyl-C61-butyric acid methyl ester) active material, efficiencies in excess of 6% have been achieved for these photovoltaic cells of 3D architecture using ITO-less flexible PET (polyethylene terephthalate) substrates. This increase in efficiency turns out to be more than twice higher than those achieved for their 2D counterparts. (paper)

  16. Low temperature ITO thin film deposition on PES substrate using pulse magnetron sputtering

    International Nuclear Information System (INIS)

    Lin, Y.C.; Li, J.Y.; Yen, W.T.

    2008-01-01

    Experiments were conducted using pulse magnetron sputtering (PMS) to deposit transparent conducting indium tin oxide (ITO) thin film onto flexible polyethersulfone (PES) plastic substrates. The thin film microstructure, optoelectronic and residual stress were analyzed using the modulating PMS power, work pressure, pulse frequency, duty cycle and cycle time process parameters. The residual stress of the thin film was determined by scanning electron microscopy (SEM) combined with the Sony equation. The experimental results show that PMS has a lower process temperature, higher deposition rate and lower resistivity compared with the radio frequency process at the same output power. The duty cycle increase produces the optimum optoelectronic characteristics. When the pressure, power, duty cycle and sputter time are increased, the thin film stress will also increase, causing flexural distortion in the PES plastic substrate. When the deposition thickness reaches 1.5 μm, ITO thin film will appear with a distinct split. Under 5 mtorr work pressure, 60 W power, 33 μs duty time and 2 μs pulse reverse time at duty cycle 95%, thin film with an optimized electrical 3.0 x 10 -4 Ω-cm, RMS surface roughness of 0.85 nm and visible region optical transmittance will be achieved with acquisition of over 85%

  17. Synthesis and morphological modification of semiconducting Mg(Zn)Al(Ga)–LDH/ITO thin films

    Energy Technology Data Exchange (ETDEWEB)

    Valente, Jaime S., E-mail: jsanchez@imp.mx [Instituto Mexicano del Petróleo, Eje Central # 152, 07730 México D.F. (Mexico); López-Salinas, Esteban [Instituto Mexicano del Petróleo, Eje Central # 152, 07730 México D.F. (Mexico); Prince, Julia [Universidad Anáhuac México Norte, Av. Universidad Anáhuac # 46, Huixquilucan, Edo. de México 52786 (Mexico); González, Ignacio; Acevedo-Peña, Prospero [Universidad Autónoma Metropolitana-Iztapalapa, Departamento de Química, Apdo. Postal 55-534, 09340 México D.F. (Mexico); Ángel, Paz del [Instituto Mexicano del Petróleo, Eje Central # 152, 07730 México D.F. (Mexico)

    2014-09-15

    Layered double hydroxide (LDH) thin films with different chemical compositions (MgZnAl, MgZnGa, MgGaAl) and varying thicknesses were easily prepared by sol–gel method followed by dip-coating. Films were chemically uniform, transparent and well adhered to a conductive indium tin oxide (ITO) substrate. Structure, chemical composition and morphology of the thin films were characterized by XRD-GADDS, SEM-EDS and AFM. Additionally, the semiconducting properties of all the prepared films were studied through the Mott–Schottky relationship; such properties were closely related to the chemical compositions of the film. The films were characterized after electrochemical treatment and important modifications regarding surface morphology, particle and crystal sizes were observed. An in-depth study was conducted in order to investigate the effect of several different electrochemical treatments on the morphology, particle size distribution and crystal size of LDH thin films. Upon electrochemical treatment, the films' surface became smooth and the particles forming the films were transformed from flaky open LDH platelets to uniformly distributed close-packed LDH nanoparticles. - Highlights: • Semiconducting Mg(Zn)Al(Ga)–LDH/ITO thin films prepared by sol–gel. • LDH thin films show a turbostratic morphology made up of porous flakes. • Electrochemical treatments change the flaky structure into a nanoparticle array.

  18. Measurement of core level and band offsets at the interface of ITO/Hg_3In_2Te_6(1 1 0) heterojunction by synchrotron radiation photoelectron spectroscopy

    International Nuclear Information System (INIS)

    Li, Yapeng; Fu, Li; Sun, Jie; Ibrahim, Kurash; Wang, Jia-ou

    2016-01-01

    Highlights: • The valence band maximum of ITO film and MIT were measured to be 1.6 eV and 0.6 eV, respectively. • The concentration of In element presented a trend of increasing first and then decreasing from MIT to ITO. • The valence band offsets of the ITO/MIT(1 1 0) heterojunction was confirmed to be a type-II band alignment phenomenon. - Abstract: The Indium Tin Oxide (ITO) film was deposited on the surface of Hg_3In_2Te_6 (short for MIT) (1 1 0) for the fabrication of ITO/MIT(1 1 0) heterojunction by using the pulsed laser deposition method. In situ X-ray photoelectron spectroscopy was utilized to examine the band offsets and core level of ITO/MIT(1 1 0) heterojunctions. The result showed that the valence band maximum of ITO films and MIT(1 1 0) were 1.6 eV and 0.6 eV, respectively. Meanwhile, it was found that the binding energy of Te 3d, Sn 3d and Hg 4f remained unchanged during the ITO deposition process. However, the binding energy of O 1s and In 3d_5_/_2 increased about 0.3 eV and 0.2 eV, respectively, with the thickness increasing of ITO film from 3.5 nm to 5 nm. This may due to the elements diffusion at the interface region during the film growing process. According to the core level spectrum, it can be speculated that no significant chemical reaction occurred at the interface of ITO/MIT(1 1 0). In addition, the valence band offset of the ITO/MIT(1 1 0) heterojunction can be calculated to be −1 ± 0.15 eV by the means of the photoelectron spectroscopy methods. The conduction band offset is deduced to be −3.96 ± 0.15 eV from the known valence band offset value, indicating that the band offsets of ITO/MIT(1 1 0) heterojunction is a type-II band alignment.

  19. Measurement of core level and band offsets at the interface of ITO/Hg{sub 3}In{sub 2}Te{sub 6}(1 1 0) heterojunction by synchrotron radiation photoelectron spectroscopy

    Energy Technology Data Exchange (ETDEWEB)

    Li, Yapeng [State Key Laboratory of Solidification Processing, School of Materials Science and Engineering, Northwestern Polytechnical University, Xi’an 710072 (China); Fu, Li, E-mail: fuli@nwpu.edu.cn [State Key Laboratory of Solidification Processing, School of Materials Science and Engineering, Northwestern Polytechnical University, Xi’an 710072 (China); Sun, Jie [State Key Laboratory of Solidification Processing, School of Materials Science and Engineering, Northwestern Polytechnical University, Xi’an 710072 (China); Ibrahim, Kurash; Wang, Jia-ou [Laboratory of Synchrotron Radiation, Institute of High Energy Physics, Chinese Academy of Sciences, Beijing 100039 (China)

    2016-02-15

    Highlights: • The valence band maximum of ITO film and MIT were measured to be 1.6 eV and 0.6 eV, respectively. • The concentration of In element presented a trend of increasing first and then decreasing from MIT to ITO. • The valence band offsets of the ITO/MIT(1 1 0) heterojunction was confirmed to be a type-II band alignment phenomenon. - Abstract: The Indium Tin Oxide (ITO) film was deposited on the surface of Hg{sub 3}In{sub 2}Te{sub 6} (short for MIT) (1 1 0) for the fabrication of ITO/MIT(1 1 0) heterojunction by using the pulsed laser deposition method. In situ X-ray photoelectron spectroscopy was utilized to examine the band offsets and core level of ITO/MIT(1 1 0) heterojunctions. The result showed that the valence band maximum of ITO films and MIT(1 1 0) were 1.6 eV and 0.6 eV, respectively. Meanwhile, it was found that the binding energy of Te 3d, Sn 3d and Hg 4f remained unchanged during the ITO deposition process. However, the binding energy of O 1s and In 3d{sub 5/2} increased about 0.3 eV and 0.2 eV, respectively, with the thickness increasing of ITO film from 3.5 nm to 5 nm. This may due to the elements diffusion at the interface region during the film growing process. According to the core level spectrum, it can be speculated that no significant chemical reaction occurred at the interface of ITO/MIT(1 1 0). In addition, the valence band offset of the ITO/MIT(1 1 0) heterojunction can be calculated to be −1 ± 0.15 eV by the means of the photoelectron spectroscopy methods. The conduction band offset is deduced to be −3.96 ± 0.15 eV from the known valence band offset value, indicating that the band offsets of ITO/MIT(1 1 0) heterojunction is a type-II band alignment.

  20. Fabrication and electrical properties of metal-oxide semiconductor capacitors based on polycrystalline p-Cu{sub x}O and HfO{sub 2}/SiO{sub 2} high-{kappa} stack gate dielectrics

    Energy Technology Data Exchange (ETDEWEB)

    Zou Xiao [Department of Electronic Science and Technology, School of Physical Science and Technology, Wuhan University, Wuhan, 430074 (China); Department of Electromachine Engineering, Jianghan University, Wuhan, 430056 (China); Fang Guojia, E-mail: gjfang@whu.edu.c [Department of Electronic Science and Technology, School of Physical Science and Technology, Wuhan University, Wuhan, 430074 (China); Yuan Longyan; Liu Nishuang; Long Hao; Zhao Xingzhong [Department of Electronic Science and Technology, School of Physical Science and Technology, Wuhan University, Wuhan, 430074 (China)

    2010-05-31

    Polycrystalline p-type Cu{sub x}O films were deposited after the growth of HfO{sub 2} dielectric on Si substrate by pulsed laser deposition, and Cu{sub x}O metal-oxide-semiconductor (MOS) capacitors with HfO{sub 2}/SiO{sub 2} stack gate dielectric were primarily fabricated and investigated. X-ray diffraction and X-ray photoelectron spectroscopy were applied to analyze crystalline structure and Cu{sup +}/Cu{sup 2+} ratios of Cu{sub x}O films respectively. SiO{sub 2} interlayer formed between the high-{kappa} dielectric and substrate was estimated by the transmission electron microscope. Results of electrical characteristic measurement indicate that the permittivity of HfO{sub 2} is about 22, and the gate leakage current density of MOS capacitor with 11.3 nm HfO{sub 2}/SiO{sub 2} stack dielectrics is {approx} 10{sup -4} A/cm{sup 2}. Results also show that the annealing in N{sub 2} can improve the quality of Cu{sub x}O/HfO{sub 2} interface and thus reduce the gate leakage density.

  1. Surface modification of indium tin oxide for direct writing of silver nanoparticulate ink micropatterns

    International Nuclear Information System (INIS)

    Vunnam, Swathi; Ankireddy, Krishnamraju; Kellar, Jon; Cross, William

    2013-01-01

    Surface treatment techniques were deployed to alter the surface of indium tin oxide (ITO) samples to attain a favorable interface between printed nano-inks and ITO surface. Surface free energy components of treated ITO substrates were calculated for each treatment using the van Oss–Chaudhury–Good method. The surface treatments of ITO changed the Lifshitz–van der Waals and Lewis acid–base components, and contact angle hysteresis significantly. Among all the surface treatments, air plasma treated samples showed high polar in nature, whereas dodecyltrichlorosilane self-assembled monolayer treated sample showed the lowest. In addition to the polarity and homogeneity, the surface roughness of the ITO was studied with respect to the surface treatment. Silver nanoparticulate ink was printed on treated ITO surfaces using aerosol jet printing system. Printed silver nano-ink line width and morphology strongly depended on the surface treatment of the ITO, ink properties and printing parameters. - Highlights: ► Surface treatments on indium tin oxide (ITO) altered its surface free energy. ► Surface free energies were studied in terms of acid–base components. ► ITO surface morphology and roughness were changed with the surface treatment. ► Silver ink was printed on treated ITO samples using aerosol jet printing system. ► Line widths of printed patterns clearly depended on the surface free energy of ITO

  2. Surface modification of indium tin oxide for direct writing of silver nanoparticulate ink micropatterns

    Energy Technology Data Exchange (ETDEWEB)

    Vunnam, Swathi, E-mail: swathi.vunnam@mines.sdsmt.edu [Nanoscience and Nanoengineering Department, South Dakota School of Mines and Technology, Rapid City, SD-57701 (United States); Ankireddy, Krishnamraju; Kellar, Jon; Cross, William [Department of Materials and Metallurgical Engineering, South Dakota School of Mines and Technology, Rapid City, SD-57701 (United States)

    2013-03-01

    Surface treatment techniques were deployed to alter the surface of indium tin oxide (ITO) samples to attain a favorable interface between printed nano-inks and ITO surface. Surface free energy components of treated ITO substrates were calculated for each treatment using the van Oss–Chaudhury–Good method. The surface treatments of ITO changed the Lifshitz–van der Waals and Lewis acid–base components, and contact angle hysteresis significantly. Among all the surface treatments, air plasma treated samples showed high polar in nature, whereas dodecyltrichlorosilane self-assembled monolayer treated sample showed the lowest. In addition to the polarity and homogeneity, the surface roughness of the ITO was studied with respect to the surface treatment. Silver nanoparticulate ink was printed on treated ITO surfaces using aerosol jet printing system. Printed silver nano-ink line width and morphology strongly depended on the surface treatment of the ITO, ink properties and printing parameters. - Highlights: ► Surface treatments on indium tin oxide (ITO) altered its surface free energy. ► Surface free energies were studied in terms of acid–base components. ► ITO surface morphology and roughness were changed with the surface treatment. ► Silver ink was printed on treated ITO samples using aerosol jet printing system. ► Line widths of printed patterns clearly depended on the surface free energy of ITO.

  3. Gate Engineering in SOI LDMOS for Device Reliability

    Directory of Open Access Journals (Sweden)

    Aanand

    2016-01-01

    Full Text Available A linearly graded doping drift region with step gate structure, used for improvement of reduced surface field (RESURF SOI LDMOS transistor performance has been simulated with 0.35µm technology in this paper. The proposed device has one poly gate and double metal gate arranged in a stepped manner, from channel to drift region. The first gate uses n+ poly (near source where as other two gates of aluminium. The first gate with thin gate oxide has good control over the channel charge. The third gate with thick gate oxide at drift region reduce gate to drain capacitance. The arrangement of second and third gates in a stepped manner in drift region spreads the electric field uniformly. Using two dimensional device simulations, the proposed SOI LDMOS is compared with conventional structure and the extended metal structure. We demonstrate that the proposed device exhibits significant enhancement in linearity, breakdown voltage, on-resistance and HCI. Double metal gate reduces the impact ionization area which helps to improve the Hot Carrier Injection effect..

  4. Fabrication of ITO-rGO/Ag NPs nanocomposite by two-step chronoamperometry electrodeposition and its characterization as SERS substrate

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Rong [Chemistry and Chemical Engineering College, Chongqing University, Shapingba, Chongqing 400044 (China); Key Disciplines Lab of Novel Micro-Nano Devices and System Technology, and School of Optoelectronics Engineering, Chongqing University, Shapingba, Chongqing 400044 (China); Analytical and Testing Center, Sichuan University of Science & Engineering, Zigong, Sichuan 643000 (China); Xu, Yi [Chemistry and Chemical Engineering College, Chongqing University, Shapingba, Chongqing 400044 (China); Key Disciplines Lab of Novel Micro-Nano Devices and System Technology, and School of Optoelectronics Engineering, Chongqing University, Shapingba, Chongqing 400044 (China); Wang, Chunyan [Key Disciplines Lab of Novel Micro-Nano Devices and System Technology, and School of Optoelectronics Engineering, Chongqing University, Shapingba, Chongqing 400044 (China); School of Optoelectronic Engineering, Chongqing University, Shapingba, Chongqing 400044 (China); Zhao, Huazhou; Wang, Renjie; Liao, Xin [Chemistry and Chemical Engineering College, Chongqing University, Shapingba, Chongqing 400044 (China); Key Disciplines Lab of Novel Micro-Nano Devices and System Technology, and School of Optoelectronics Engineering, Chongqing University, Shapingba, Chongqing 400044 (China); Chen, Li; Chen, Gang [Key Disciplines Lab of Novel Micro-Nano Devices and System Technology, and School of Optoelectronics Engineering, Chongqing University, Shapingba, Chongqing 400044 (China); School of Optoelectronic Engineering, Chongqing University, Shapingba, Chongqing 400044 (China)

    2015-09-15

    Highlights: • A novel structure of ITO-rGO/Ag NPs substrate was developed for SERS application. • Two-step chronoamperometry deposition method was used to prepare SERS substrate. • The SERS substrate had high SERS activity, good uniformity and reproducibility. - Abstract: A novel composite structure of reduced graphene oxide (rGO)–Ag nanoparticles (Ag NPs) nanocomposite, which was integrated on the indium tin oxide (ITO) glass by a facile and rapid two-step chronoamperometry electrodeposition route, was proposed and developed in this paper. SERS-activity of the rGO/Ag NPs nanocomposite was mainly affected by the structure and size of the fabricated rGO/Ag NPs nanocomposite. In the experiments, the operational conditions of electrodeposition process were studied in details. The electrodeposited time was the important controllable factor, which decided the particle size and surface coverage of the deposited Ag NPs on ITO glass. Under the optimized conditions, the detection limit for rhodamine6G (R6G) was as low as 10{sup −11} M and the Raman enhancement factor was as large as 5.9 × 10{sup 8}, which was 24 times higher than that for the ITO–Ag NPs substrate. Apart from this higher enhancement effect, it was also illustrated that extremely good uniformity and reproducibility with low standard deviation could be obtained by the prepared ITO-rGO/Ag NPs nanocomposite for SRES detection.

  5. Fabrication of ITO-rGO/Ag NPs nanocomposite by two-step chronoamperometry electrodeposition and its characterization as SERS substrate

    International Nuclear Information System (INIS)

    Wang, Rong; Xu, Yi; Wang, Chunyan; Zhao, Huazhou; Wang, Renjie; Liao, Xin; Chen, Li; Chen, Gang

    2015-01-01

    Highlights: • A novel structure of ITO-rGO/Ag NPs substrate was developed for SERS application. • Two-step chronoamperometry deposition method was used to prepare SERS substrate. • The SERS substrate had high SERS activity, good uniformity and reproducibility. - Abstract: A novel composite structure of reduced graphene oxide (rGO)–Ag nanoparticles (Ag NPs) nanocomposite, which was integrated on the indium tin oxide (ITO) glass by a facile and rapid two-step chronoamperometry electrodeposition route, was proposed and developed in this paper. SERS-activity of the rGO/Ag NPs nanocomposite was mainly affected by the structure and size of the fabricated rGO/Ag NPs nanocomposite. In the experiments, the operational conditions of electrodeposition process were studied in details. The electrodeposited time was the important controllable factor, which decided the particle size and surface coverage of the deposited Ag NPs on ITO glass. Under the optimized conditions, the detection limit for rhodamine6G (R6G) was as low as 10 −11 M and the Raman enhancement factor was as large as 5.9 × 10 8 , which was 24 times higher than that for the ITO–Ag NPs substrate. Apart from this higher enhancement effect, it was also illustrated that extremely good uniformity and reproducibility with low standard deviation could be obtained by the prepared ITO-rGO/Ag NPs nanocomposite for SRES detection

  6. The effects of sodium in ITO by pulsed laser deposition on organic light-emitting diodes

    International Nuclear Information System (INIS)

    Yong, Thian Khok; Kee, Yeh Yee; Tan, Sek Sean; Siew, Wee Ong; Tou, Teck Yong; Yap, Seong Shan

    2010-01-01

    The depth profile of ITO on glass was measured by the time-of-flight secondary ion mass spectroscopy (TOFSIMS) which revealed high sodium (Na) ion concentration at the ITO surface as well as at the ITO-glass interface as a result of out diffusion with substrate heating. Effects of Na ions on the performance of organic light-emitting diode (OLED) were studied by etching away a few tens of nanometers off the ITO surface with a dilute aquaregia solution of HNO 3 :HCl:H 2 O. A single-layer, molecularly doped ITO/(PVK+TPD+Alq 3 )/Al OLEDs were fabricated on bare and etched ITO samples. Although the removal of a 10-nm layer of ITO surface increased the voltage range, brightness, and lifetime, it was insufficient to correlate these improvements with solely to the Na ion reduction without considering the surface roughness. (orig.)

  7. Extrahepatic bile duct ligation in broiler chickens: ultrastructural study of Ito cell

    Directory of Open Access Journals (Sweden)

    Ekowati Handharyani

    2004-12-01

    Full Text Available The Ito cell (fat-storing cell is a cell lying in perisinusoidal space of liver. The function of Ito cell is expanding from a site of fat-storing site to a center of extracellular matrix metabolism and mediator production in the liver. This study was performed in order to evaluate the Ito cells in cholestatic condition. The artificial cholestatic was conducted by ligation of extrahepatic bile ducts (bile duct ligation = BDL in broilers. The results showed that BDL induced bile congestion, fibrosis, proliferation of Ito cells and intrahepatic bile ductules. Immunohistochemistry demonstrated that Ito cells were scattered throughout the fibrotic areas, and larger in size with more extensive immunoreactivity than those in normal livers. Ultrastructural study demonstrated that Ito cells were closely associated with the production of extracellular collagen fibers. Ito cells actively react against hepatocytic injuries, especially in fibrogenesis of cholestatic livers.

  8. The effects of sodium in ITO by pulsed laser deposition on organic light-emitting diodes

    Energy Technology Data Exchange (ETDEWEB)

    Yong, Thian Khok [Multimedia University, Faculty of Engineering, Cyberjaya, Selangor (Malaysia); Universiti Tunku Abdul Rahman, Faculty of Engineering and Science, Kuala Lumpur (Malaysia); Kee, Yeh Yee; Tan, Sek Sean; Siew, Wee Ong; Tou, Teck Yong [Multimedia University, Faculty of Engineering, Cyberjaya, Selangor (Malaysia); Yap, Seong Shan [Multimedia University, Faculty of Engineering, Cyberjaya, Selangor (Malaysia); Norwegian University of Science and Technology, Department of Physics, Trondheim (Norway)

    2010-12-15

    The depth profile of ITO on glass was measured by the time-of-flight secondary ion mass spectroscopy (TOFSIMS) which revealed high sodium (Na) ion concentration at the ITO surface as well as at the ITO-glass interface as a result of out diffusion with substrate heating. Effects of Na ions on the performance of organic light-emitting diode (OLED) were studied by etching away a few tens of nanometers off the ITO surface with a dilute aquaregia solution of HNO{sub 3}:HCl:H{sub 2}O. A single-layer, molecularly doped ITO/(PVK+TPD+Alq{sub 3})/Al OLEDs were fabricated on bare and etched ITO samples. Although the removal of a 10-nm layer of ITO surface increased the voltage range, brightness, and lifetime, it was insufficient to correlate these improvements with solely to the Na ion reduction without considering the surface roughness. (orig.)

  9. Electronic structure of ClAlPc/pentacene/ITO interfaces studied by using soft X-ray spectroscopy

    Energy Technology Data Exchange (ETDEWEB)

    Cho, Sangwan; Lee, Sangho; Kim, Minsoo; Heo, Nari; Lee, Geunjeong [Yonsei University, Wonju (Korea, Republic of); Smith, Kevin E. [Boston University, Boston, MA (United States)

    2014-11-15

    The interfacial electronic structure of a bilayer of chloroaluminum phthalocyanine (ClAlPc) and pentacene grown on indium tin oxide (ITO) has been studied using synchrotron-radiation-excited photoelectron spectroscopy. The energy difference between the highest occupied molecular orbital (HOMO) level of the pentacene layer and the lowest unoccupied molecular orbital (LUMO) level of the ClAlPc layer (E{sup D}{sub HOMO} - E{sup A}{sub LUMO}) was determined and compared with that of C{sub 60}/ pentacene bilayers. The E{sup D}{sub HOMO} - E{sup A}{sub LUMO} of a heterojunction with ClAlPc was found to be 1.3 eV while that with C{sub 60} was 0.9 eV. This difference is discussed in terms of the difference in the ionization energy of each acceptor materials. We also obtained the complete energy level diagrams of both ClAlPc/pentacene/ITO and C{sub 60}/pentacene/ITO.

  10. Electronic Structure of ClAlPc/pentacene/ITO Interfaces Studied by Using Soft X-ray Spectroscopy

    Energy Technology Data Exchange (ETDEWEB)

    Cho, Sang Wan [Yonsei Univ., Wonju (Korea); Lee, Sangho [Yonsei Univ., Wonju (Korea); Kim, Minsoo [Yonsei Univ., Wonju (Korea); Heo, Nari [Yonsei Univ., Wonju (Korea); Lee, Geunjeong [Yonsei Univ., Wonju (Korea); Smith, Kevin E. [Boston Univ., MA (United States)

    2014-12-06

    The interfacial electronic structure of a bilayer of chloroaluminum phthalocyanine (ClAlPc) and pentacene grown on indium tin oxide (ITO) has been studied using synchrotron-radiation-excited photoelectron spectroscopy. The energy difference between the highest occupied molecular orbital (HOMO) level of the pentacene layer and the lowest unoccupied molecular orbital (LUMO) level of the ClAlPc layer (E HOMO D - E LUMO A ) was determined and compared with that of C60/pentacene bilayers. The E HOMO D - E LUMO A of a heterojunction with ClAlPc was found to be 1.3 eV while that with C60 was 0.9 eV. This difference is discussed in terms of the difference in the ionization energy of each acceptor materials. We also obtained the complete energy level diagrams of both ClAlPc/pentacene/ITO and C60/pentacene/ITO.

  11. Effect of light illumination and temperature on P3HT films, n-type Si, and ITO

    Energy Technology Data Exchange (ETDEWEB)

    Scudiero, Louis, E-mail: scudiero@wsu.edu [Chemistry Department and Material Science and Engineering Program, Washington State University, Pullman, Washington 99164 (United States); Shen, Yang [Department of Electrical and Computer Engineering, University of Virginia, 351 McCormick Road, Charlottesville, Virginia 22904 (United States); Gupta, Mool C., E-mail: mgupta@virginia.edu [Department of Electrical and Computer Engineering, University of Virginia, 351 McCormick Road, Charlottesville, Virginia 22904 (United States)

    2014-02-15

    The secondary electron (SE) cutoff energy region spectra are recorded before (dark), during (light) and after laser exposure (dark) for P3HT, Si, and ITO. An SE cutoff energy shift is observed when the bare n-type doped Si substrate is exposed to 532 nm light. This is attributed to the presence of a thin native oxide layer (∼1.5 nm) on Si. No energy shift is detected on the Ar sputtered clean Si. Also, no shift was observed for ITO. When exposed to light, a net SE energy cutoff shift was measured for P3HT deposited on both Si and ITO substrates at room temperature. However, no significant valence band maximum (VBM) energy shifts were measured for P3HT that was spun cast on both substrates under dark and light illumination. Furthermore, light effect was investigated at three different temperatures; 25, 70, and 160{sup o}C and it is found that for P3HT, the magnitude of the SE cutoff energy change is not only substrate dependent but also depends on temperature.

  12. The ITO-capped WO3 nanowires biosensor based on field-effect transistor in label-free protein sensing

    International Nuclear Information System (INIS)

    Shariati, Mohsen

    2017-01-01

    The fabrication of ITO-capped WO 3 nanowires associated with their bio-sensing properties in field-effect transistor diagnostics basis as a biosensor has been reported. The bio-sensing property for manipulated nanowires elucidated that the grown nanostructures were very sensitive to protein. The ITO-capped WO 3 nanowires biosensor showed an intensive bio-sensing activity against reliable protein. Polylysine strongly charged bio-molecule was applied as model system to demonstrate the implementation of materialized biosensor. The employed sensing mechanism was 'label-free' and depended on bio-molecule's intrinsic charge. For nanowires synthesis, the vapor-liquid-solid mechanism was used. Nanowires were beyond a few hundred nanometers in lengths and around 15-20 nm in diameter, while the globe cap's size on the nanowires was around 15-25 nm. The indium tin oxide (ITO) played as catalyst in nanofabrication for WO 3 nanowires growth and had outstanding role in bio-sensing especially for bio-molecule adherence. In applied electric field presence, the fabricated device showed the great potential to enhance medical diagnostics. (orig.)

  13. Improvement of ITO properties in green-light-emitting devices by using N2:O2 plasma treatment

    Science.gov (United States)

    Jeon, Hyeonseong; Kang, Seongjong; Oh, Hwansool

    2016-01-01

    Plasma treatment reduces the roughness of the indium-tin-oxide (ITO) interface in organic light emitting diodes (OLEDs). Oxygen gas is typically used in the plasma treatment of conventional OLED devices. However, in this study, nitrogen and oxygen gases were used for surface treatment to improve the properties of ITO. To investigate the improvements resulting from the use of nitrogen and oxygen plasma treatment, fabricated green OLED devices. The device's structure was ITO (600 Å) / α-NPD (500 Å) / Alq3:NKX1595 (400 Å:20 Å,5%) / LiF / Al:Li (10 Å:1000 Å). The plasma treatment was performed in a capacitive coupled plasma (CCP) type plasma treatment chamber similar to that used in the traditional oxygen plasma treatment. The results of this study show that the combined nitrogen/oxygen plasma treatment increases the lifetime, current density, and brightness of the fabricated OLED while decreasing the operating voltage relative to those of OLEDs fabricated using oxygen plasma treatment.

  14. An amperometric uric acid biosensor based on Bis[sulfosuccinimidyl] suberate crosslinker/3-aminopropyltriethoxysilane surface modified ITO glass electrode

    International Nuclear Information System (INIS)

    Ahuja, Tarushee; Rajesh; Kumar, Devendra; Tanwar, Vinod Kumar; Sharma, Vikash; Singh, Nahar; Biradar, Ashok M.

    2010-01-01

    A label free, amperometric uric acid biosensor is described by immobilizing enzyme uricase through a self assembled monolayer (SAM) of 3-aminopropyltriethoxysilane (APTES) using a crosslinker, Bis[sulfosuccinimidyl]suberate (BS 3 ) on an indium-tin-oxide (ITO) coated glass plate. The biosensor (uricase/BS 3 /APTES/ITO) was characterized by, scanning electron microscopy (SEM), atomic force microscopy (AFM) and electrochemical techniques. Chronoamperometric response was measured as a function of uric acid concentration in aqueous solution (pH 7.4). The biosensor shows a linear response over a concentration range of 0.05 to 0.58 mM with a sensitivity of 39.35 μA mM -1 . The response time is 50 s reaching to a 95% steady state current value and about 90% of enzyme activity is retained for about 7 weeks. These results indicate an efficient binding of enzyme with the crosslinker over the surface of APTES modified ITO glass plates, which leads to an improved sensitivity and shelf life of the biosensor.

  15. Radiation resistance and comparative performance of ITO/InP and n/p InP homojunction solar cells

    International Nuclear Information System (INIS)

    Weinberg, I.; Swartz, C.K.; Hart, R.E. Jr.; Coutts, T.J.

    1988-09-01

    The radiation resistance of ITO/InP cells processed by DC magnetron sputtering is compared to that of standard n/p InP and GaAs homojunction cells. After 20 MeV proton irradiations, it is found that the radiation resistance of the present ITO/InP cell is comparable to that of the n/p homojunction InP cell and that both InP cell types have radiation resistance significantly greater than GaAs. The relatively lower radiation resistance, observed at higher fluence, for the InP cell with the deepest junction depth, is attributed to losses in the cells emitter region. Diode parameters obtained from I sub sc - V sub oc plots, data from surface Raman spectroscopy, and determinations of surface conductivity types are used to investigate the configuration of the ITO/InP cells. It is concluded that thesee latter cells are n/p homojunctions, the n-region consisting of a disordered layer at the oxide semiconductor

  16. Environmentally Friendly Plasma-Treated PEDOT:PSS as Electrodes for ITO-Free Perovskite Solar Cells.

    Science.gov (United States)

    Vaagensmith, Bjorn; Reza, Khan Mamun; Hasan, Md Nazmul; Elbohy, Hytham; Adhikari, Nirmal; Dubey, Ashish; Kantack, Nick; Gaml, Eman; Qiao, Qiquan

    2017-10-18

    Solution processed poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) transparent electrodes (TEs) offer great potential as a low cost alternative to expensive indium tin oxide (ITO). However, strong acids are typically used for enhancing the conductivity of PEDOT:PSS TEs, which produce processing complexity and environmental issues. This work presents an environmentally friendly acid free approach to enhance the conductivity of PEDOT:PSS using a light oxygen plasma treatment, in addition to solvent blend additives and post treatments. The plasma treatment was found to significantly reduce the sheet resistance of PEDOT:PSS TEs from 85 to as low as 15 Ω sq -1 , which translates to the highest reported conductivity of 5012 S/cm for PEDOT:PSS TEs. The plasma treated PEDOT:PSS TE resulted in an ITO-free perovskite solar cell efficiency of 10.5%, which is the highest reported efficiency for ITO-free perovskite solar cells with a PEDOT:PSS electrode that excludes the use of acid treatments. This research presents the first demonstration of this technology. Moreover, the PEDOT:PSS TEs enabled better charge extraction from the perovskite solar cells and reduced hysteresis in the current density-voltage (J-V) curves.

  17. Magnetoresistances in Ni80Fe20-ITO granular film

    International Nuclear Information System (INIS)

    Gao Chunhong; Chen Ke; Yang Yanxia; Xiong Yuanqiang; Chen Peng

    2012-01-01

    Highlights: ► Magnetoresistance (MR) in Ni 80 Fe 20 -ITO granular film are investigated. ► MR is positive at high temperature, and is negative at low temperature. ► MR results from the competition among three mechanisms. - Abstract: The magnetic properties, electrical properties and magnetoresistance are investigated in Ni 80 Fe 20 -ITO granular film with various volume fractions V NF of Ni 80 Fe 20 . The room temperature magnetization hysteresis of sample with V NF = 25% shows superparamagnetic behavior. Current-voltage curve of sample with V NF = 25% at 175 K shows typical tunneling-type behavior. The magnetoresistances of samples with low V NF are positive at high temperature, and are negative at low temperature. The temperature-dependent magnetoresistances result from the competition among ordinary magnetoresistances, the granular-typed tunneling magnetoresistance and the spin-mixing induced magnetoresistances.

  18. Light-extraction enhancement of GaN-based 395  nm flip-chip light-emitting diodes by an Al-doped ITO transparent conductive electrode.

    Science.gov (United States)

    Xu, Jin; Zhang, Wei; Peng, Meng; Dai, Jiangnan; Chen, Changqing

    2018-06-01

    The distinct ultraviolet (UV) light absorption of indium tin oxide (ITO) limits the performance of GaN-based near-UV light-emitting diodes (LEDs). Herein, we report an Al-doped ITO with enhanced UV transmittance and low sheet resistance as the transparent conductive electrode for GaN-based 395 nm flip-chip near-UV LEDs. The thickness dependence of optical and electrical properties of Al-doped ITO films is investigated. The optimal Al-doped ITO film exhibited a transmittance of 93.2% at 395 nm and an average sheet resistance of 30.1  Ω/sq. Meanwhile, at an injection current of 300 mA, the forward voltage decreased from 3.14 to 3.11 V, and the light output power increased by 13% for the 395 nm near-UV flip-chip LEDs with the optimal Al-doped ITO over those with pure ITO. This Letter provides a simple and repeatable approach to further improve the light extraction efficiency of GaN-based near-UV LEDs.

  19. Very high efficiency phosphorescent organic light-emitting devices by using rough indium tin oxide

    International Nuclear Information System (INIS)

    Zhang, Yingjie; Aziz, Hany

    2014-01-01

    The efficiency of organic light-emitting devices (OLEDs) is shown to significantly depend on the roughness of the indium tin oxide (ITO) anode. By using rougher ITO, light trapped in the ITO/organic wave-guided mode can be efficiently extracted, and a light outcoupling enhancement as high as 40% is achieved. Moreover, contrary to expectations, the lifetime of OLEDs is not affected by ITO roughness. Finally, an OLED employing rough ITO anode that exhibits a current efficiency of 56 cd/A at the remarkably high brightness of 10 5  cd/m 2 is obtained. This represents the highest current efficiency at such high brightness to date for an OLED utilizing an ITO anode, without any external light outcoupling techniques. The results demonstrate the significant efficiency benefits of using ITO with higher roughness in OLEDs.

  20. Very high efficiency phosphorescent organic light-emitting devices by using rough indium tin oxide

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, Yingjie; Aziz, Hany, E-mail: h2aziz@uwaterloo.ca [Department of Electrical and Computer Engineering and Waterloo Institute for Nanotechnology, University of Waterloo, 200 University Avenue West, Waterloo, Ontario N2L 3G1 (Canada)

    2014-07-07

    The efficiency of organic light-emitting devices (OLEDs) is shown to significantly depend on the roughness of the indium tin oxide (ITO) anode. By using rougher ITO, light trapped in the ITO/organic wave-guided mode can be efficiently extracted, and a light outcoupling enhancement as high as 40% is achieved. Moreover, contrary to expectations, the lifetime of OLEDs is not affected by ITO roughness. Finally, an OLED employing rough ITO anode that exhibits a current efficiency of 56 cd/A at the remarkably high brightness of 10{sup 5} cd/m{sup 2} is obtained. This represents the highest current efficiency at such high brightness to date for an OLED utilizing an ITO anode, without any external light outcoupling techniques. The results demonstrate the significant efficiency benefits of using ITO with higher roughness in OLEDs.

  1. Rf reactive sputtering of indium-tin-oxide films

    International Nuclear Information System (INIS)

    Tvarozek, V.; Novotny, I.; Harman, R.; Kovac, J.

    1986-01-01

    Films of indium-tin-oxide (ITO) have been deposited by rf reactive diode sputtering of metallic InSn alloy targets, or ceramic ITO targets, in an Ar and Ar+0 2 atmosphere. Electrical as well as optical properties of ITO films were controlled by varying sputtering parameters and by post-deposition heat-treatment in Ar, H 2 , N 2 , H 2 +N 2 ambients. The ITO films exhibited low resistivity approx. 2 x 10 -4 Ω cm, high transmittance approx. 90% in the visible spectral region and high reflectance approx. 80% in the near infra-red region. (author)

  2. Structural study of Mg doped cobalt ferrite thin films on ITO coated glass substrate

    Science.gov (United States)

    Suthar, Mahesh; Bapna, Komal; Kumar, Kishor; Ahuja, B. L.

    2018-05-01

    We have synthesized thin films of Co1-xMgxFe2O4 (x = 0, 0.4, 0.6, 0.8, 1) on transparent conducting indium tin oxide (ITO) coated glass substrate by pulsed laser deposition method. The structural properties of the grown films were analyzed by the X-ray diffraction and Raman spectroscopy, which suggest the single phase growth of these films. Raman spectra revealed the incorporation of Mg ions into CoFe2O4 lattice and suggest that the Mg ions initially go both to the octahedral and tetrahedral sites upto a certain concentration. For higher concentration, Mg ions prefer to occupy the tetrahedral sites.

  3. Nanosecond laser scribing of CIGS thin film solar cell based on ITO bottom contact

    Science.gov (United States)

    Kuk, Seungkuk; Wang, Zhen; Fu, Shi; Zhang, Tao; Yu, Yi Yin; Choi, JaeMyung; Jeong, Jeung-hyun; Hwang, David J.

    2018-03-01

    Cu(In,Ga)Se2 (CIGS) thin films, a promising photovoltaic architecture, have mainly relied on Molybdenum for the bottom contact. However, the opaque nature of Molybdenum (Mo) poses limitations in module level fabrication by laser scribing as a preferred method for interconnect. We examined the P1, P2, and P3 laser scribing processes on CIGS photovoltaic architecture on the indium tin oxide (ITO) bottom contact with a cost-effective nanosecond pulsed laser of 532 nm wavelength. Laser illuminated from the substrate side, enabled by the transparent bottom contact, facilitated selective laser energy deposition onto relevant interfaces towards high-quality scribing. Parametric tuning procedures are described in conjunction with experimental and numerical investigation of relevant mechanisms, and preliminary mini-module fabrication results are also presented.

  4. New gate opening hours

    CERN Multimedia

    GS Department

    2009-01-01

    Please note the new opening hours of the gates as well as the intersites tunnel from the 19 May 2009: GATE A 7h - 19h GATE B 24h/24 GATE C 7h - 9h\t17h - 19h GATE D 8h - 12h\t13h - 16h GATE E 7h - 9h\t17h - 19h Prévessin 24h/24 The intersites tunnel will be opened from 7h30 to 18h non stop. GS-SEM Group Infrastructure and General Services Department

  5. Heavy-ion-induced, gate-rupture in power MOSFETs

    International Nuclear Information System (INIS)

    Fischer, T.A.

    1987-01-01

    A new, heavy-ion-induced, burnout mechanism has been experimentally observed in power metal-oxide-semiconductor field-effect transistors (MOSFETs). This mechanism occurs when a heavy, charged particle passes through the gate oxide region of n- or p-channel devices having sufficient gate-to-source or gate-to-drain bias. The gate-rupture leads to significant permanent degradation of the device. A proposed failure mechanism is discussed and experimentally verified. In addition, the absolute immunity of p-channel devices to heavy-ion-induced, semiconductor burnout is demonstrated and discussed along with new, non-destructive, burnout testing methods

  6. Optical and electro-catalytic properties of bundled ZnO nanowires grown on a ITO substrate

    International Nuclear Information System (INIS)

    Xia Cao; Wang Ning; Wang Long

    2010-01-01

    Bundled wurtzite zinc oxide (ZnO) nanowires were fabricated in a facile manner on an ITO-conducting substrate via a microemulsion route without using any hard template or external electric/magnetic field. Structure and properties of the as-prepared ZnO electrode were investigated using scanning electron microscopy, X-ray diffraction, photoluminescence, Raman spectroscopy, as well as electrochemical tests. The ZnO electrode shows excellent optical and electrocatalytic ability, which may find further applications such as optoelectronics or as sensors as well as other modern industrial areas.

  7. Preparation and optical properties of indium tin oxide/epoxy nanocomposites with polyglycidyl methacrylate grafted nanoparticles.

    Science.gov (United States)

    Tao, Peng; Viswanath, Anand; Schadler, Linda S; Benicewicz, Brian C; Siegel, Richard W

    2011-09-01

    Visibly highly transparent indium tin oxide (ITO)/epoxy nanocomposites were prepared by dispersing polyglycidyl methacrylate (PGMA) grafted ITO nanoparticles into a commercial epoxy resin. The oleic acid stabilized, highly crystalline, and near monodisperse ITO nanoparticles were synthesized via a nonaqueous synthetic route with multigram batch quantities. An azido-phosphate ligand was synthesized and used to exchange with oleic acid on the ITO surface. The azide terminal group allows for the grafting of epoxy resin compatible PGMA polymer chains via Cu(I) catalyzed alkyne-azide "click" chemistry. Transmission electron microscopy (TEM) observation shows that PGMA grafted ITO particles were homogeneously dispersed within the epoxy matrix. Optical properties of ITO/epoxy nanocomposites with different ITO concentrations were studied with an ultraviolet-visible-near-infrared (UV-vis-NIR) spectrometer. All the ITO/epoxy nanocomposites show more than 90% optical transparency in the visible light range and absorption of UV light from 300 to 400 nm. In the near-infrared region, ITO/epoxy nanocomposites demonstrate low transmittance and the infrared (IR) transmission cutoff wavelength of the composites shifts toward the lower wavelength with increased ITO concentration. The ITO/epoxy nanocomposites were applied onto both glass and plastic substrates as visibly transparent and UV/IR opaque optical coatings.

  8. Bias stress instability of double-gate a-IGZO TFTs on polyimide substrate

    Science.gov (United States)

    Cho, Won-Ju; Ahn, Min-Ju

    2017-09-01

    In this study, flexible double-gate thin-film transistor (TFT)-based amorphous indium-galliumzinc- oxide (a-IGZO) was fabricated on a polyimide substrate. Double-gate operation with connected front and back gates was compared with a single-gate operation. As a result, the double-gate a- IGZO TFT exhibited enhanced electrical characteristics as well as improved long-term reliability. Under positive- and negative-bias temperature stress, the threshold voltage shift of the double-gate operation was much smaller than that of the single-gate operation.

  9. Nonvolatile memory thin-film transistors using biodegradable chicken albumen gate insulator and oxide semiconductor channel on eco-friendly paper substrate.

    Science.gov (United States)

    Kim, So-Jung; Jeon, Da-Bin; Park, Jung-Ho; Ryu, Min-Ki; Yang, Jong-Heon; Hwang, Chi-Sun; Kim, Gi-Heon; Yoon, Sung-Min

    2015-03-04

    Nonvolatile memory thin-film transistors (TFTs) fabricated on paper substrates were proposed as one of the eco-friendly electronic devices. The gate stack was composed of chicken albumen gate insulator and In-Ga-Zn-O semiconducting channel layers. All the fabrication processes were performed below 120 °C. To improve the process compatibility of the synthethic paper substrate, an Al2O3 thin film was introduced as adhesion and barrier layers by atomic layer deposition. The dielectric properties of biomaterial albumen gate insulator were also enhanced by the preparation of Al2O3 capping layer. The nonvolatile bistabilities were realized by the switching phenomena of residual polarization within the albumen thin film. The fabricated device exhibited a counterclockwise hysteresis with a memory window of 11.8 V, high on/off ratio of approximately 1.1 × 10(6), and high saturation mobility (μsat) of 11.5 cm(2)/(V s). Furthermore, these device characteristics were not markedly degraded even after the delamination and under the bending situration. When the curvature radius was set as 5.3 cm, the ION/IOFF ratio and μsat were obtained to be 5.9 × 10(6) and 7.9 cm(2)/(V s), respectively.

  10. In situ diazonium-modified flexible ITO-coated PEN substrates for the deposition of adherent silver-polypyrrole nanocomposite films.

    Science.gov (United States)

    Samanta, Soumen; Bakas, Idriss; Singh, Ajay; Aswal, Dinesh K; Chehimi, Mohamed M

    2014-08-12

    In this paper, we report a simple and versatile process of electrografting the aryl multilayers onto indium tin oxide (ITO)-coated flexible poly(ethylene naphthalate) (PEN) substrates using a diazonium salt (4-pyrrolylphenyldiazonium) solution, which was generated in situ from a reaction between the 4-(1H-pyrrol-1-yl)aniline precursor and sodium nitrite in an acidic medium. The first aryl layer bonds with the ITO surface through In-O-C and Sn-O-C bonds which facilitate the formation of a uniform aryl multilayer that is ∼8 nm thick. The presence of the aryl multilayer has been confirmed by impedance spectroscopy as well as by electron-transfer blocking measurements. These in situ diazonium-modified ITO-coated PEN substrates may find applications in flexible organic electronics and sensor industries. Here we demonstrate the application of diazonium-modified flexible substrates for the growth of adherent silver/polpyrrole nanocomposite films using surface-confined UV photopolymerization. These nanocomposite films have platelet morphology owing to the template effect of the pyrrole-terminated aryl multilayers. In addition, the films are highly doped (32%). This work opens new areas in the design of flexible ITO-conductive polymer hybrids.

  11. ITO films realized at room-temperature by ion beam sputtering for high-performance flexible organic light-emitting diodes

    Energy Technology Data Exchange (ETDEWEB)

    Lucas, B.; Rammal, W.; Moliton, A. [Limoges Univ., Faculte des Sciences et Techniques, CNRS, UMR 6172, Institut de Recherche XLIM, Dept. MINACOM, 87 - Limoges (France)

    2006-06-15

    Indium-tin oxide (ITO) thin layers are obtained by an IBS (Ion Beam Sputtering) deposition process. We elaborated ITO films on flexible substrates of polyethylene terephthalate (PET), under soft conditions of low temperatures and fulfilling the requirements of fabrication processes of the organic optoelectronic components. With a non thermally activated (20 Celsius degrees) ITO deposition assisted by an oxygen flow (1 cm{sup 3}/min), we got an optical transmittance of 90% in the visible range, a resistivity around 10{sup -3} {omega}.cm and a surface roughness lower than 1.5 mm. Thus we realized flexible organic light-emitting diodes (FOLEDs) with good performances: a maximum luminance of 12000 cd/m{sup 2} at a voltage of 19 V and a maximum luminous power efficiency around 1 lm/W at a voltage of 10 V (or a maximum current efficiency of 4 cd/A at 14 V) for the (PET(50 {mu}m) / ITO(200 nm) / TPD(40 nm) / Alq3(60 nm) / Ca / Al) structure. (authors)

  12. Immunohistochemical study of Ito cells of spontaneous cholangiohepatitis in broiler chickens

    Directory of Open Access Journals (Sweden)

    E Handharyani

    2001-12-01

    Full Text Available The function of Ito cells is expanding from a fat-storing site to a center of extracellular matrix metabolism and mediator production in the liver. Immunohistochemical reactivities of Ito cells were examined in eight livers of broiler chickens affected with spontaneous cholangiohepatitis and six chicken livers with malformation of extrahepatic biliary tracts. The livers in both groups revealed severe diffuse fibrosis. Ito cells expressing HHF35 muscle actin and desmin actively proliferated in the fibrotic foci of the all livers. The immunoreactivities of Ito cells to antibodies were enhanced compared with those in normal livers. There were no immunohistochemical differences between the Ito cells of two groups. From these findings, it was suggested that Ito cells actively proliferate and show enhanced immunoreactivities in the livers affected with cholangiohepatitis and malformation of extrahepatic biliary tracts.

  13. Ballistic transport of graphene pnp junctions with embedded local gates

    International Nuclear Information System (INIS)

    Nam, Seung-Geol; Ki, Dong-Keun; Kim, Youngwook; Kim, Jun Sung; Lee, Hu-Jong; Park, Jong Wan

    2011-01-01

    We fabricated graphene pnp devices, by embedding pre-defined local gates in an oxidized surface layer of a silicon substrate. With neither deposition of dielectric material on the graphene nor electron-beam irradiation, we obtained high-quality graphene pnp devices without degradation of the carrier mobility even in the local-gate region. The corresponding increased mean free path leads to the observation of ballistic and phase-coherent transport across a local gate 130 nm wide, which is about an order of magnitude wider than reported previously. Furthermore, in our scheme, we demonstrated independent control of the carrier density in the local-gate region, with a conductance map very much distinct from those of top-gated devices. This was caused by the electric field arising from the global back gate being strongly screened by the embedded local gate. Our scheme allows the realization of ideal multipolar graphene junctions with ballistic carrier transport.

  14. Optically active polyurethane@indium tin oxide nanocomposite: Preparation, characterization and study of infrared emissivity

    International Nuclear Information System (INIS)

    Yang, Yong; Zhou, Yuming; Ge, Jianhua; Yang, Xiaoming

    2012-01-01

    Highlights: ► Silane coupling agent of KH550 was used to connect the ITO and polyurethanes. ► Infrared emissivity values of the hybrids were compared and analyzed. ► Interfacial synergistic action and orderly secondary structure were the key factors. -- Abstract: Optically active polyurethane@indium tin oxide and racemic polyurethane@indium tin oxide nanocomposites (LPU@ITO and RPU@ITO) were prepared by grafting the organics onto the surfaces of modified ITO nanoparticles. LPU@ITO and RPU@ITO composites based on the chiral and racemic tyrosine were characterized by FT-IR, UV–vis spectroscopy, X-ray diffraction (XRD), SEM, TEM, and thermogravimetric analysis (TGA), and the infrared emissivity values (8–14 μm) were investigated in addition. The results indicated that the polyurethanes had been successfully grafted onto the surfaces of ITO without destroying the crystalline structure. Both composites possessed the lower infrared emissivity values than the bare ITO nanoparticles, which indicated that the interfacial interaction had great effect on the infrared emissivity. Furthermore, LPU@ITO based on the optically active polyurethane had the virtue of regular secondary structure and more interfacial synergistic actions between organics and inorganics, thus it exhibited lower infrared emissivity value than RPU@ITO based on the racemic polyurethane.

  15. A laboratory scale approach to polymer solar cells using one coating/printing machine, flexible substrates, no ITO, no vacuum and no spincoating

    DEFF Research Database (Denmark)

    Carlé, Jon Eggert; Andersen, Thomas Rieks; Helgesen, Martin

    2013-01-01

    Printing of the silver back electrode under ambient conditions using simple laboratory equipment has been the missing link to fully replace evaporated metal electrodes. Here we demonstrate how a recently developed roll coater is further developed into a single machine that enables processing of a......–tin-oxide (ITO) or vacuum evaporation steps making it a significant step beyond the traditional laboratory polymer solar cell processing methods involving spin coating and metal evaporation....

  16. Negative charge induced degradation of PMOSFETs with BF2-implanted p+-poly gate

    International Nuclear Information System (INIS)

    Lu, C.Y.; Sung, J.M.

    1989-01-01

    A new degradation phenomenon on thin gate oxide PMOS-FETs with BF 2 implanted p + -poly gate has been demonstrated and investigated. The cause of this type of degradation is a combination of the boron penetration through the gate oxide and charge trap generation due to the presence of fluorine in the gate oxide and some other processing-induced effects. The negative charge-induced degradation other than enhanced boron diffusion has been studied in detail here. The impact of this process-sensitive p + -poly gate structure on deep submicron CMOS process integration has been discussed. (author)

  17. Surface modification of indium tin oxide films by amino ion implantation for the attachment of multi-wall carbon nanotubes

    International Nuclear Information System (INIS)

    Jiao Jiao; Liu Chenyao; Chen Qunxia; Li Shuoqi; Hu Jingbo; Li Qilong

    2010-01-01

    Amino ion implantation was carried out at the energy of 80 keV with fluence of 5 x 10 15 ions cm -2 for indium tin oxide film (ITO) coated glass, and the existence of amino group on the ITO surface was verified by X-ray photoelectron spectroscopy analysis and Fourier transform infrared spectra. Scanning electron microscopy images show that multi-wall carbon nanotubes (MWCNTs) directly attached to the amino ion implanted ITO (NH 2 /ITO) surface homogeneously and stably. The resulting MWCNTs-attached NH 2 /ITO (MWCNTs/NH 2 /ITO) substrate can be used as electrode material. Cyclic voltammetry results indicate that the MWCNTs/NH 2 /ITO electrode shows excellent electrochemical properties and obvious electrocatalytic activity towards uric acid, thus this material is expected to have potential in electrochemical analysis and biosensors.

  18. Microstructure and opto-electric properties of Cu/ITO thin films

    International Nuclear Information System (INIS)

    Wang Xian; Li Junlei; Shi Shiwei; Song Xueping; Cui Jingbiao; Sun Zhaoqi

    2012-01-01

    Highlights: ► We prepared Cu/ITO films with different Cu layer thickness. ► We analyzed the relation between opto-electric properties and roughness of the films. ► The Cu-16.1 nm/ITO film shows excellent optical and electric properties. ► Cu/ITO films have great application prospects in new-type transflective displays. - Abstract: Cu/ITO thin films were deposited on glass and silicon substrates by DC and RF magnetron sputtering at room temperature. X-ray diffraction results showed that the films were amorphous. Both of SEM images and 3D Profilometer images indicated that the surface morphology of the ITO films had been affected by the Cu layer. The optical and electric properties of the Cu/ITO films changed significantly with the variation of Cu layer thickness. Cu-5.4 nm/ITO film exhibited the highest optical transmittance of 62.9% at 550 nm and the lowest sheet resistance of 96 Ω/□, whereas Cu-16.1 nm/ITO film showed the highest average reflectance of 24.0% and the lowest resistance of 27.4 Ω/□. Based on our analysis, it was evaluated that Cu layer had an important effect on the electrical and optical properties of ITO thin films.

  19. All ITO-based transparent resistive switching random access memory using oxygen doping method

    International Nuclear Information System (INIS)

    Kim, Hee-Dong; Yun, Min Ju; Kim, Sungho

    2015-01-01

    Recently, transparent memory would be useful in invisible electronics. In this work, for the first time we present a feasibility of stable unipolar resistive switching (RS) characteristics with reset current of sub-micron ampere for the fully transparent ITO/oxygen-doped ITO/ITO memory capacitors, i.e., all ITO structures, produced by sputtering method, which shows a high optical transmittance of approximately 80% in the visible region as well as near ultra-violet region. In addition, in a RS test to evaluate a reliability for the proposed memory devices, we observed a stable endurance of >100 cycles and a retention time of >10 4  s at 85 °C, with a current ratio of ∼10 2 to ∼10 3 . This result indicates that this transparent memory by engineering the amount of oxygen ions within the ITO films could be a milestone for future see-through electronic devices. - Highlights: • The resistive switching characteristics of the transparent ITO/O-doped ITO/ITO RRAM cells have investigated. • All ITO-based RRAM cell is achieved using oxygen doping method. • Good endurance and long retention time were observed.

  20. Direct imprinting of indium-tin-oxide precursor gel and simultaneous formation of channel and source/drain in thin-film transistor

    Science.gov (United States)

    Haga, Ken-ichi; Kamiya, Yuusuke; Tokumitsu, Eisuke

    2018-02-01

    We report on a new fabrication process for thin-film transistors (TFTs) with a new structure and a new operation principle. In this process, both the channel and electrode (source/drain) are formed simultaneously, using the same oxide material, using a single nano-rheology printing (n-RP) process, without any conventional lithography process. N-RP is a direct thermal imprint technique and deforms oxide precursor gel. To reduce the source/drain resistance, the material common to the channel and electrode is conductive indium-tin-oxide (ITO). The gate insulator is made of a ferroelectric material, whose high charge density can deplete the channel of the thin ITO film, which realizes the proposed operation principle. First, we have examined the n-RP conditions required for the channel and source/drain patterning, and found that the patterning properties are strongly affected by the cooling rate before separating the mold. Second, we have fabricated the TFTs as proposed and confirmed their TFT operation.