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Sample records for oxide film fabricated

  1. Oxidation phase growth diagram of vanadium oxides film fabricated by rapid thermal annealing

    Institute of Scientific and Technical Information of China (English)

    Tamura KOZO; Zheng-cao LI; Yu-quan WANG; Jie NI; Yin HU; Zheng-jun ZHANG

    2009-01-01

    Thermal evaporation deposited vanadium oxide films were annealed in air by rapid thermal annealing (RTP). By adjusting the annealing temperature and time, a series of vanadium oxide films with various oxidation phases and surface morphologies were fabricated, and an oxidation phase growth diagram was established. It was observed that different oxidation phases appear at a limited and continuous annealing condition range, and the morphologic changes are related to the oxidation process.

  2. Fabrication of transparent cellulose acetate/graphene oxide nanocomposite film for UV shielding

    Energy Technology Data Exchange (ETDEWEB)

    Jahan, Nusrat; Khan, Wasi, E-mail: wasiamu@gmail.com; Azam, Ameer; Naqvi, A. H. [Department of Applied Physics, Z.H. College of Engineering & Technology, Aligarh Muslim University, Aligarh - 202002 (India)

    2016-05-23

    In this work, we have fabricated transparent cellulose acetate/graphene oxide nanocomposite (CAGONC) films for ultraviolet radiations (UVR) shielding. Graphene oxide (GO) was synthesized by modified Hummer’s method and CAGONC films were fabricated by solvent casting method. The films were analyzed using characterization techniques like x-ray diffraction (XRD), energy dispersive x-ray (EDX) equipped scanning electron microscopy (SEM), transmission electron microscopy (TEM), Fourier transform infrared (FTIR) spectroscopy and ultra-violet visible (UV-VIS) spectroscopy. Four films were prepared by varying the wt% of GO (0.1wt%, 0.2wt% and 0.3wt%) with respect to cellulose acetate (CA). UV-vis measurements exhibit optical transparency in the range of 76-99% for visible light while ultra-violet radiation was substantially shielded.

  3. Fabrication of Au/graphene oxide/Ag sandwich structure thin film and its tunable energetics and tailorable optical properties

    OpenAIRE

    Ruijin Hong; Jialin Ji; Chunxian Tao; Daohua Zhang; Dawei Zhang

    2017-01-01

    Au/graphene oxide/Ag sandwich structure thin film was fabricated. The effects of graphene oxide (GO) and bimetal on the structure and optical properties of metal silver films were investigated by X-ray diffraction (XRD), optical absorption, and Raman intensity measurements, respectively. Compared to silver thin film, Au/graphene oxide/Ag sandwich structure composite thin films were observed with wider optical absorption peak and enhanced absorption intensity. The Raman signal for Rhodamine B ...

  4. Fabrication of Au/graphene oxide/Ag sandwich structure thin film and its tunable energetics and tailorable optical properties

    Directory of Open Access Journals (Sweden)

    Ruijin Hong

    2017-01-01

    Full Text Available Au/graphene oxide/Ag sandwich structure thin film was fabricated. The effects of graphene oxide (GO and bimetal on the structure and optical properties of metal silver films were investigated by X-ray diffraction (XRD, optical absorption, and Raman intensity measurements, respectively. Compared to silver thin film, Au/graphene oxide/Ag sandwich structure composite thin films were observed with wider optical absorption peak and enhanced absorption intensity. The Raman signal for Rhodamine B molecules based on the Au/graphene oxide/Ag sandwich nanostructure substrate were obviously enhanced due to the bimetal layer and GO layer with tunable absorption intensity and fluorescence quenching effects.

  5. Design, Fabrication and Characterization of Thin Film Structures through Oxidation Kinetics

    Science.gov (United States)

    Diaz Leon, Juan Jose

    Materials science and engineering is devoted to the understanding of the physics and chemistry of materials at the mesoscale and to applying that knowledge into real-life applications. In this work, different oxide materials and different oxidation methods are studied from a materials science point of view and for specific applications. First, the deposition of complex metal oxides is explored for solar energy concentration. This requires a number of multi-cation oxide structures such as thin-film dielectric barriers, low loss waveguides or the use of continuously graded composition oxides for antireflection coatings and light concentration. Then, oxidation via Joule heating is used for the self-alignment of a selector on top of a memristor structure on a nanovia. Simulations are used to explore the necessary voltage for the insulator-to-metal transition temperature of NbO2 using finite element analysis, followed by the fabrication and the characterization of such a device. Finally, long-term copper oxidation at room temperature and pressure is studied using optical techniques. Alternative characterization techniques are used to confirm the growth rate and phase change, and an application of copper oxide as a volatile conductive bridge is shown. All these examples show how the combination of novel simulation, fabrication and characterization techniques can be used to understand physical mechanisms and enable disruptive technologies in fields such as solar cells, light emitting diodes, photodetectors or memory devices.

  6. Fabrication of indium tin oxide (ITO) thin film with pre-treated sol coating

    International Nuclear Information System (INIS)

    Hong, Sung-Jei; Han, Jeong-In

    2004-01-01

    A new pre-treated sol-coating method to fabricate an indium tin oxide (ITO) thin film is introduced in this paper. The pre-treatment sol-coating method is to form a seed layer on the substrate before spin coating of ITO sol. The pre-treatment was carried out at room temperature in order not to damage the substrate during the pre-treatment. It is effective to enhance the formation of the ITO sol film on the substrate, owing to the seed layer. The seed layer consists of ultrafine grains, which are observed at the pre-treated substrate. For the optimal pre-treatment condition, we used pre-treatment times of 24, 48, 72, and 96 hours to observe the effect on the characteristics of ITO sol film. As a result, the lowest resistance could be achieved with a pre-treatment time of 72 hours. The optical transmittance of the ITO sol film with the pre-treatment time of 72 hours exceeded 80 % at a wavelength of 400 nm. So, an ITO sol film with good electrical and optical properties could be fabricated by using the pretreatment sol coating.

  7. Fabrication and RF characterization of zinc oxide based Film Bulk Acoustic Resonator

    Science.gov (United States)

    Patel, Raju; Bansal, Deepak; Agrawal, Vimal Kumar; Rangra, Kamaljit; Boolchandani, Dharmendar

    2018-06-01

    This work reports fabrication and characterization of Film Bulk Acoustic Resonator (FBAR) to improve the performance characteristics for RF filter and sensing application. Zinc oxide as a piezoelectric (PZE) material was deposited on an aluminum bottom electrode using an RF magnetron sputtering, at room temperature, and gold as top electrode for the resonator. Tetramethyl ammonium hydroxide (TMAH) setup was used for bulk silicon etching to make back side cavity to confine the acoustic signals. The transmission characteristics show that the FBARs have a central frequency at 1.77 GHz with a return loss of -10.7 dB.

  8. Pulsed Photoinitiated Fabrication of Inkjet Printed Titanium Dioxide/Reduced Graphene Oxide Nanocomposite Thin Films.

    Science.gov (United States)

    Bourgeois, Briley; Luo, Sijun; Riggs, Brian; Ji, Yaping; Adireddy, Shiva; Schroder, Kurt; Farnsworth, Stan; Chrisey, Douglas B; Escarra, Matthew

    2018-05-08

    This work reports a new technique for scalable and low temperature processing of nanostructured-TiO2 thin films, allowing for practical manufacturing of TiO2 based devices such as perovskite solar cells at low temperature or on flexible substrates. Dual layers of dense and mesoporous TiO2/graphitic oxide nanocomposite films are synthesized simultaneously using inkjet printing and pulsed photonic irradiation. Investigation of process parameters including precursor concentration (10-20 wt%) and exposure fluence (4.5-8.5 J/cm2) reveals control over crystalline quality, graphitic oxide phase, film thickness, dendrite density, and optical properties. Raman spectroscopy shows the E¬g peak, characteristic of anatase phase titania, increases in intensity with higher photonic irradiation fluence, suggesting increased crystallinity through higher fluence processing. Film thickness and dendrite density is shown to increase with precursor concentration in the printed ink. The dense base layer thickness was controlled between 20 nm to 80 nm. The refractive index of the films is determined by ellipsometry to be 1.92 +/- 0.08 at 650 nm. Films exhibit an energy weighted optical transparency of 91.1%, in comparison to 91.3% of a thermally processed film, when in situ carbon materials were removed. Transmission and diffuse reflectance are used to determine optical band gaps of the films ranging from 2.98 eV to 3.38 eV in accordance with the photonic irradiation fluence and suggests tunability of TiO2 phase composition. The sheet resistance of the synthesized films is measured to be 14.54 +/- 1.11 Ω/□ and 28.90 +/- 2.24 Ω/□ for films as-processed and after carbon removal, respectively, which is comparable to high temperature processed TiO2 thin films. The studied electrical and optical properties of the light processed films show comparable results to traditionally processed TiO2 while offering the distinct advantages of scalable manufacturing, low-temperature processing

  9. Fabrication of nickel oxide and Ni-doped indium tin oxide thin films using pyrosol process

    International Nuclear Information System (INIS)

    Nakasa, Akihiko; Adachi, Mami; Usami, Hisanao; Suzuki, Eiji; Taniguchi, Yoshio

    2006-01-01

    Organic light emitting diodes (OLEDs) need indium tin oxide (ITO) anodes with highly smooth surface. The work function of ITO, about 4.8 eV, is generally rather lower than the optimum level for application to OLEDs. In this work, NiO was deposited by pyrosol process on pyrosol ITO film to increase the work function of the ITO for improving the performance of OLEDs. It was confirmed that NiO was successfully deposited on pyrosol ITO film and the NiO deposition increased the work function of pyrosol ITO, using X-ray diffraction (XRD), field emission scanning electron microscopy (FE-SEM), atomic force microscopy (AFM) and atmospheric photoelectron spectroscopy. Furthermore, doping ITO with Ni succeeded in producing the Ni-doped ITO film with high work function and lower sheet resistance

  10. Rod-coating: towards large-area fabrication of uniform reduced graphene oxide films for flexible touch screens.

    Science.gov (United States)

    Wang, Jie; Liang, Minghui; Fang, Yan; Qiu, Tengfei; Zhang, Jin; Zhi, Linjie

    2012-06-05

    A novel strategy is developed for the large-scale fabrication of reduced graphene oxide films directly on flexible substrates in a controlled manner by the combination of a rod-coating technique and room-temperature reduction of graphene oxide. The as-prepared films display excellent uniformity, good transparency and conductivity, and great flexibility in a touch screen. Copyright © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  11. Investigation of the fabrication parameters of thick film metal oxide-polymer pH electrodes

    International Nuclear Information System (INIS)

    Gac, Arnaud

    2002-01-01

    This thesis describes a study into the development of an optimum material and fabrication process for the production of thick film pH electrodes. These devices consist of low cost, miniature and rugged pH sensors formed by screen printing a metal oxide bearing paste onto a high temperature (∼850 deg C) fired metal back contact supported on a standard alumina substrate. The pH sensitive metal oxide layer must be fabricated at relatively low temperatures (<300 deg C) in order to maintain the pH sensitivity of the layer and hence requires the use of a suitably stable low temperature curing binder. Bespoke fabricated inks are derived from a Taguchi style factorial experimental plans in which, different binder types, curing temperatures, hydration level and percentage mixtures of different metal oxides and layer thicknesses were investigated. The pH responses of 18 printed electrodes per batch were assessed in buffer solutions with respect to a commercial reference electrode forming a complete potentiometric circuit. The evaluation criteria used in the study included the device-to-device variation in sensitivity of the pH sensors and their sensitivity variation as a function of time. The results indicated the importance of the choice of binder type in particular on the performance characteristics. Reproducible device-to-device variation in sensitivity was determined for the best inks found, whatever the ink fabrication batch. A reduction in the sensitivity variation with time has been determined using the mathematical models derived from an experimental plan. The lack of reproducibility of the sensitivity magnitude, regardless of the ink manufacturing batch, seems to be a recurrent problem with prototype inks. Experimental sub-Nernstian responses are discussed in the light of possible pH mechanisms. (author)

  12. Fabrication of heterojunction solar cells by using microcrystalline hydrogenated silicon oxide film as an emitter

    International Nuclear Information System (INIS)

    Banerjee, Chandan; Sritharathikhun, Jaran; Konagai, Makoto; Yamada, Akira

    2008-01-01

    Wide gap, highly conducting n-type hydrogenated microcrystalline silicon oxide (μc-SiO : H) films were prepared by very high frequency plasma enhanced chemical vapour deposition at a very low substrate temperature (170 deg. C) as an alternative to amorphous silicon (a-Si : H) for use as an emitter layer of heterojunction solar cells. The optoelectronic properties of n-μc-SiO : H films prepared for the emitter layer are dark conductivity = 0.51 S cm -1 at 20 nm thin film, activation energy = 23 meV and E 04 = 2.3 eV. Czochralski-grown 380 μm thick p-type (1 0 0) oriented polished silicon wafers with a resistivity of 1-10 Ω cm were used for the fabrication of heterojunction solar cells. Photovoltaic parameters of the device were found to be V oc = 620 mV, J sc = 32.1 mA cm -2 , FF = 0.77, η = 15.32% (active area efficiency)

  13. Highly conducting and crystalline doubly doped tin oxide films fabricated using a low-cost and simplified spray technique

    Energy Technology Data Exchange (ETDEWEB)

    Ravichandran, K., E-mail: kkr1365@yahoo.co [P.G. and Research Department of Physics, AVVM. Sri Pushpum College, Poondi, Thanjavur District, Tamil Nadu 613503 (India); Muruganantham, G.; Sakthivel, B. [P.G. and Research Department of Physics, AVVM. Sri Pushpum College, Poondi, Thanjavur District, Tamil Nadu 613503 (India)

    2009-11-15

    Doubly doped (simultaneous doping of antimony and fluorine) tin oxide films (SnO{sub 2}:Sb:F) have been fabricated by employing an inexpensive and simplified spray technique using perfume atomizer from aqueous solution of SnCl{sub 2} precursor. The structural studies revealed that the films are highly crystalline in nature with preferential orientation along the (2 0 0) plane. It is found that the size of the crystallites of the doubly doped tin oxide films is larger (69 nm) than that (27 nm) of their undoped counterparts. The dislocation density of the doubly doped film is lesser (2.08x10{sup 14} lines/m{sup 2}) when compared with that of the undoped film (13.2x10{sup 14} lines/m{sup 2}), indicating the higher degree of crystallinity of the doubly doped films. The SEM images depict that the films are homogeneous and uniform. The optical transmittance in the visible range and the optical band gap of the doubly doped films are 71% and 3.56 eV respectively. The sheet resistance (4.13 OMEGA/square) attained for the doubly doped film in this study is lower than the values reported for spray deposited fluorine or antimony doped tin oxide films prepared from aqueous solution of SnCl{sub 2} precursor (without using methanol or ethanol).

  14. Fabrication of amorphous silicon nanoribbons by atomic force microscope tip-induced local oxidation for thin film device applications

    International Nuclear Information System (INIS)

    Pichon, L; Rogel, R; Demami, F

    2010-01-01

    We demonstrate the feasibility of induced local oxidation of amorphous silicon by atomic force microscopy. The resulting local oxide is used as a mask for the elaboration of a thin film silicon resistor. A thin amorphous silicon layer deposited on a glass substrate is locally oxidized following narrow continuous lines. The corresponding oxide line is then used as a mask during plasma etching of the amorphous layer leading to the formation of a nanoribbon. Such an amorphous silicon nanoribbon is used for the fabrication of the resistor

  15. Excimer laser sintering of indium tin oxide nanoparticles for fabricating thin films of variable thickness on flexible substrates

    International Nuclear Information System (INIS)

    Park, Taesoon; Kim, Dongsik

    2015-01-01

    Technology to fabricate electrically-conducting, transparent thin-film patterns on flexible substrates has possible applications in flexible electronics. In this work, a pulsed-laser sintering process applicable to indium tin oxide (ITO) thin-film fabrication on a substrate without thermal damage to the substrate was developed. A nanosecond pulsed laser was used to minimize thermal penetration into the substrate and to control the thickness of the sintered layer. ITO nanoparticles (NPs) of ~ 20 nm diameter were used to lower the process temperature by exploiting their low melting point. ITO thin film patterns were fabricated by first spin coating the NPs onto a surface, then sintering them using a KrF excimer laser. The sintered films were characterized using field emission scanning electron microscopy. The electrical resistivity and transparency of the film were measured by varying the process parameters. A single laser pulse could generate the polycrystalline structure (average grain size ~ 200 nm), reducing the electrical resistivity of the film by a factor of ~ 1000. The sintering process led to a minimum resistivity of 1.1 × 10 −4 Ω·m without losing the transparency of the film. The thickness of the sintered layer could be varied up to 150 nm by adjusting the laser fluence. Because the estimated thermal penetration depth in the ITO film was less than 200 nm, no thermal damage was observed in the substrate. This work suggests that the proposed process, combined with various particle deposition methods, can be an effective tool to form thin-film ITO patterns on flexible substrates. - Highlights: • Excimer laser sintering can fabricate ITO thin films on flexible substrates. • The laser pulse can form a polycrystalline structure without thermal damage. • The laser sintering process can reduce the electrical resistivity substantially. • The thickness of the sintered layer can be varied effectively

  16. Excimer laser sintering of indium tin oxide nanoparticles for fabricating thin films of variable thickness on flexible substrates

    Energy Technology Data Exchange (ETDEWEB)

    Park, Taesoon; Kim, Dongsik, E-mail: dskim87@postech.ac.kr

    2015-03-02

    Technology to fabricate electrically-conducting, transparent thin-film patterns on flexible substrates has possible applications in flexible electronics. In this work, a pulsed-laser sintering process applicable to indium tin oxide (ITO) thin-film fabrication on a substrate without thermal damage to the substrate was developed. A nanosecond pulsed laser was used to minimize thermal penetration into the substrate and to control the thickness of the sintered layer. ITO nanoparticles (NPs) of ~ 20 nm diameter were used to lower the process temperature by exploiting their low melting point. ITO thin film patterns were fabricated by first spin coating the NPs onto a surface, then sintering them using a KrF excimer laser. The sintered films were characterized using field emission scanning electron microscopy. The electrical resistivity and transparency of the film were measured by varying the process parameters. A single laser pulse could generate the polycrystalline structure (average grain size ~ 200 nm), reducing the electrical resistivity of the film by a factor of ~ 1000. The sintering process led to a minimum resistivity of 1.1 × 10{sup −4} Ω·m without losing the transparency of the film. The thickness of the sintered layer could be varied up to 150 nm by adjusting the laser fluence. Because the estimated thermal penetration depth in the ITO film was less than 200 nm, no thermal damage was observed in the substrate. This work suggests that the proposed process, combined with various particle deposition methods, can be an effective tool to form thin-film ITO patterns on flexible substrates. - Highlights: • Excimer laser sintering can fabricate ITO thin films on flexible substrates. • The laser pulse can form a polycrystalline structure without thermal damage. • The laser sintering process can reduce the electrical resistivity substantially. • The thickness of the sintered layer can be varied effectively.

  17. Direct electrochemistry and electrocatalysis of lobetyolin via magnetic functionalized reduced graphene oxide film fabricated electrochemical sensor

    International Nuclear Information System (INIS)

    Sun, Bolu; Gou, Xiaodan; Bai, Ruibin; Abdelmoaty, Ahmed Attia Ahmed; Ma, Yuling; Zheng, Xiaoping; Hu, Fangdi

    2017-01-01

    A novel lobetyolin electrochemical sensor based on a magnetic functionalized reduced graphene oxide/Nafion nanohybrid film has been introduced in this work. The magnetic functionalized reduced graphene oxide was characterized by fourier transform infrared spectroscopy, atomic force microscope, X-ray diffraction, transmission electron microscopy and thermogravimetric analysis. The scanning electron microscopy characterized the morphology and microstructure of the prepared sensors, and the electrochemical effective surface areas of the prepared sensors were also calculated by chronocoulometry method. The electrochemical behavior of lobetyolin on the magnetic functionalized reduced graphene oxide/Nafion nanohybrid modified glassy carbon electrode was investigated by cyclic voltammetry and differential pulse voltammetry in a phosphate buffer solution of pH 6.0. The electron-transfer coefficient (α), electron transfer number (n), and electrode reaction rate constant (Κs) were calculated as 0.78, 0.73, and 4.63 s −1 , respectively. Under the optimized conditions, the sensor based on magnetic functionalized reduced graphene oxide/Nafion showed a linear voltammetric response to the lobetyolin concentration at 1.0 × 10 −7 to 1.0 × 10 −4 mol/L with detection limit (S/N = 3)of 4.3 × 10 −8 mol/L. The proposed sensor also displayed acceptable reproducibility, long-term stability, and high selectivity, and performs well for analysis of lobetyolin in real samples. The voltammetric sensor was successfully applied to detect lobetyolin in Codonopsis pilosula with recovery values in the range of 96.12% –102.66%. - Graphical abstract: Schematic diagram of the synthesis of MrGO hybrid and the fabrication process of the MrGO/Nafion/GCE for determination of lobetyolin. Display Omitted - Highlights: • The MrGO/Nafion@GCE electrochemical sensor was successfully fabricated. • The prepared MrGO was characterized by AFM, XRD, FTIR, VSM, TEM and SEM. • The proposed

  18. Direct electrochemistry and electrocatalysis of lobetyolin via magnetic functionalized reduced graphene oxide film fabricated electrochemical sensor

    Energy Technology Data Exchange (ETDEWEB)

    Sun, Bolu [School of Pharmacy, Lanzhou University, Lanzhou 730000 (China); Gou, Xiaodan [School of Chemistry and Chemical Engineering, Nanjing University, 210046 (China); Bai, Ruibin; Abdelmoaty, Ahmed Attia Ahmed; Ma, Yuling; Zheng, Xiaoping [School of Pharmacy, Lanzhou University, Lanzhou 730000 (China); Hu, Fangdi, E-mail: hufd@lzu.edu.cn [School of Pharmacy, Lanzhou University, Lanzhou 730000 (China)

    2017-05-01

    A novel lobetyolin electrochemical sensor based on a magnetic functionalized reduced graphene oxide/Nafion nanohybrid film has been introduced in this work. The magnetic functionalized reduced graphene oxide was characterized by fourier transform infrared spectroscopy, atomic force microscope, X-ray diffraction, transmission electron microscopy and thermogravimetric analysis. The scanning electron microscopy characterized the morphology and microstructure of the prepared sensors, and the electrochemical effective surface areas of the prepared sensors were also calculated by chronocoulometry method. The electrochemical behavior of lobetyolin on the magnetic functionalized reduced graphene oxide/Nafion nanohybrid modified glassy carbon electrode was investigated by cyclic voltammetry and differential pulse voltammetry in a phosphate buffer solution of pH 6.0. The electron-transfer coefficient (α), electron transfer number (n), and electrode reaction rate constant (Κs) were calculated as 0.78, 0.73, and 4.63 s{sup −1}, respectively. Under the optimized conditions, the sensor based on magnetic functionalized reduced graphene oxide/Nafion showed a linear voltammetric response to the lobetyolin concentration at 1.0 × 10{sup −7} to 1.0 × 10{sup −4} mol/L with detection limit (S/N = 3)of 4.3 × 10{sup −8} mol/L. The proposed sensor also displayed acceptable reproducibility, long-term stability, and high selectivity, and performs well for analysis of lobetyolin in real samples. The voltammetric sensor was successfully applied to detect lobetyolin in Codonopsis pilosula with recovery values in the range of 96.12% –102.66%. - Graphical abstract: Schematic diagram of the synthesis of MrGO hybrid and the fabrication process of the MrGO/Nafion/GCE for determination of lobetyolin. Display Omitted - Highlights: • The MrGO/Nafion@GCE electrochemical sensor was successfully fabricated. • The prepared MrGO was characterized by AFM, XRD, FTIR, VSM, TEM and SEM.

  19. Fabrication of birnessite-type layered manganese oxide films for super capacitors

    Energy Technology Data Exchange (ETDEWEB)

    Zhou, Y.K.; Dorval-Douville, G.; Favier, F. [Montpellier-2 Univ., LAMMI, UMR CNRS 5072, 34 (France)

    2004-07-01

    Birnessite-type layered manganese oxide films were anodically deposited at the surface of an inexpensive stainless steel. MnSO{sub 4} plating solutions were used at various potentials and for various durations. X-ray diffraction and scanning electron microscopy were used to examine the material structure and surface morphologies of obtained manganese oxide films. The capacitive characteristics and stability of these oxides were systematically investigated by means of cyclic voltammetry method in aqueous electrolytes. Deposition conditions affected the oxides structure and morphologies, and consequently greatly affected their electrochemical capacitance performance. (authors)

  20. Fabrication of high-performance fluorine doped-tin oxide film using flame-assisted spray deposition

    Energy Technology Data Exchange (ETDEWEB)

    Purwanto, Agus, E-mail: Aguspur@uns.ac.id [Department of Chemical Engineering, Faculty of Engineering, Sebelas Maret University, Jl. Ir. Sutami 36 A, Surakarta, Central Java 57126 (Indonesia); Widiyandari, Hendri [Department of Physics, Faculty of Mathematics and Natural Sciences, Diponegoro University, Jl. Prof. Dr. Soedarto, Tembalang, Semarang 50275 (Indonesia); Jumari, Arif [Department of Chemical Engineering, Faculty of Engineering, Sebelas Maret University, Jl. Ir. Sutami 36 A, Surakarta, Central Java 57126 (Indonesia)

    2012-01-01

    A high-performance fluorine-doped tin oxide (FTO) film was fabricated by flame-assisted spray deposition method. By varying the NH{sub 4}F doping concentration, the optimal concentration was established as 8 at.%. X-ray diffractograms confirmed that the as-grown FTO film was tetragonal SnO{sub 2}. In addition, the FTO film was comprised of nano-sized grains ranging from 40 to 50 nm. The heat-treated FTO film exhibited a sheet resistance of 21.8 {Omega}/{open_square} with an average transmittance of 81.9% in the visible region ({lambda} = 400-800 nm). The figures of merit shows that the prepared FTO film can be used for highly efficient dye-sensitized solar cells electrodes.

  1. Improved Laser Scribing of Transparent Conductive Oxide for Fabrication of Thin-Film Solar Module

    Science.gov (United States)

    Egorov, F. S.; Kukin, A. V.; Terukov, E. I.; Titov, A. S.

    2018-04-01

    Nonuniform thickness of the front transparent conductive oxide (TCO) used for fabrication of thin-film solar module (TFSM) based on micromorphic technology affects P1 laser scribing (P1 scribing on the TCO front layer). A method for improvement of the thickness uniformity of the front TCO using modification of the existing system for gas supply of the LPCVD (TCO1200) vacuum setup with the aid of gasdistributing tubes is proposed. The thickness nonuniformity of the deposition procedure is decreased from 15.2 to 11.4% to improve uniformity of the resistance of the front TCO and light-scattering factor of TFSM. In addition, the number of P1 laser scribes with inadmissible resistance of insulation (less than 2 MΩ) is decreased by a factor of 7. A decrease in the amount of melt at the P1 scribe edges leads to an increase in the TFSM shunting resistance by 56 Ω. The TFSM output power is increased by 0.4 W due to improvement of parameters of the front TCO related to application of gas-distributing tubes.

  2. Zinc oxide nanoparticle-coated films: fabrication, characterization, and antibacterial properties

    Energy Technology Data Exchange (ETDEWEB)

    Jiang, Yunhong, E-mail: y.jiang@leeds.ac.uk [University of Leeds, Institute of Particle Science and Engineering (United Kingdom); O’Neill, Alex J. [University of Leeds, School of Molecular and Cellular Biology (United Kingdom); Ding, Yulong [University of Leeds, Institute of Particle Science and Engineering (United Kingdom)

    2015-04-15

    In this article, novel antibacterial PVC-based films coated with ZnO nanoparticles (NPs) were fabricated, characterized, and studied for their antibacterial properties. It was shown that the ZnO NPs were coated on the surface of the PVC films uniformly and that the coating process did not affect the size and shape of the NPs on the surface of PVC films. Films coated with concentrations of either 0.2 or 0.075 g/L of ZnO NPs exhibited antibacterial activity against both Gram-positive (Staphylococcus aureus) and Gram-negative (Escherichia coli) bacteria, but exhibited no antifungal activity against Aspergillus flavus and Penicillium citrinum. Smaller particles (100 nm) exhibited more potent antibacterial activity than larger particles (1000 nm). All ZnO-coated films maintained antibacterial activity after 30 days in water.

  3. The Optimum Fabrication Condition of p-Type Antimony Tin Oxide Thin Films Prepared by DC Magnetron Sputtering

    Directory of Open Access Journals (Sweden)

    Huu Phuc Dang

    2016-01-01

    Full Text Available Transparent Sb-doped tin oxide (ATO thin films were fabricated on quartz glass substrates via a mixed (SnO2 + Sb2O3 ceramic target using direct current (DC magnetron sputtering in ambient Ar gas at a working pressure of 2 × 10−3 torr. X-ray diffraction (XRD, X-ray photoelectron spectroscopy (XPS, Hall-effect, and UV-vis spectra measurements were performed to characterize the deposited films. The substrate temperature of the films was investigated in two ways: (1 films were annealed in Ar ambient gas after being deposited at room temperature or (2 they were deposited directly at different temperatures. The first process for fabricating the ATO films was found to be easier than the second process. The deposited films showed p-type electrical properties, a polycrystalline tetragonal rutile structure, and their average transmittance was greater than 80% in the visible light range at the optimum annealing temperature of 500°C. The best electrical properties of the film were obtained on a 10 wt% Sb2O3-doped SnO2 target with a resistivity, hole concentration, and Hall mobility of 0.55 Ω·cm, 1.2 × 1019 cm−3, and 0.54 cm2V−1s−1, respectively.

  4. Fabrication of Amorphous Indium Gallium Zinc Oxide Thin Film Transistor by using Focused Ion Beam

    Science.gov (United States)

    Zhu, Wencong

    Compared with other transparent semiconductors, amorphous indium gallium zinc oxide (a-IGZO) has both good uniformity and high electron mobility, which make it as a good candidate for displays or large-scale transparent circuit. The goal of this research is to fabricate alpha-IGZO thin film transistor (TFT) with channel milled by focused ion beam (FIB). TFTs with different channel geometries can be achieved by applying different milling strategies, which facilitate modifying complex circuit. Technology Computer-Aided Design (TCAD) was also introduced to understand the effect of trapped charges on the device performance. The investigation of the trapped charge at IGZO/SiO2 interface was performed on the IGZO TFT on p-Silicon substrate with thermally grown SiO2 as dielectric. The subgap density-of-state model was used for the simulation, which includes conduction band-tail trap states and donor-like state in the subgap. The result shows that the de-trapping and donor-state ionization determine the interface trapped charge density at various gate biases. Simulation of IGZO TFT with FIB defined channel on the same substrate was also applied. The drain and source were connected intentionally during metal deposition and separated by FIB milling. Based on the simulation, the Ga ions in SiO2 introduced by the ion beam was drifted by gate bias and affects the saturation drain current. Both side channel and direct channel transparent IGZO TFTs were fabricated on the glass substrate with coated ITO. Higher ion energy (30 keV) was used to etch through the substrate between drain and source and form side channels at the corner of milled trench. Lower ion energy (16 keV) was applied to stop the milling inside IGZO thin film and direct channel between drain and source was created. Annealing after FIB milling removed the residual Ga ions and the devices show switch feature. Direct channel shows higher saturation drain current (~10-6 A) compared with side channel (~10-7 A) because

  5. Facile fabrication of wire-type indium gallium zinc oxide thin-film transistors applicable to ultrasensitive flexible sensors.

    Science.gov (United States)

    Kim, Yeong-Gyu; Tak, Young Jun; Kim, Hee Jun; Kim, Won-Gi; Yoo, Hyukjoon; Kim, Hyun Jae

    2018-04-03

    We fabricated wire-type indium gallium zinc oxide (IGZO) thin-film transistors (TFTs) using a self-formed cracked template based on a lift-off process. The electrical characteristics of wire-type IGZO TFTs could be controlled by changing the width and density of IGZO wires through varying the coating conditions of template solution or multi-stacking additional layers. The fabricated wire-type devices were applied to sensors after functionalizing the surface. The wire-type pH sensor showed a sensitivity of 45.4 mV/pH, and this value was an improved sensitivity compared with that of the film-type device (27.6 mV/pH). Similarly, when the wire-type device was used as a glucose sensor, it showed more variation in electrical characteristics than the film-type device. The improved sensing properties resulted from the large surface area of the wire-type device compared with that of the film-type device. In addition, we fabricated wire-type IGZO TFTs on flexible substrates and confirmed that such structures were very resistant to mechanical stresses at a bending radius of 10 mm.

  6. Oxygen Partial Pressure Impact on Characteristics of Indium Titanium Zinc Oxide Thin Film Transistor Fabricated via RF Sputtering.

    Science.gov (United States)

    Hsu, Ming-Hung; Chang, Sheng-Po; Chang, Shoou-Jinn; Wu, Wei-Ting; Li, Jyun-Yi

    2017-06-26

    Indium titanium zinc oxide (InTiZnO) as the channel layer in thin film transistor (TFT) grown by RF sputtering system is proposed in this work. Optical and electrical properties were investigated. By changing the oxygen flow ratio, we can suppress excess and undesirable oxygen-related defects to some extent, making it possible to fabricate the optimized device. XPS patterns for O 1s of InTiZnO thin films indicated that the amount of oxygen vacancy was apparently declined with the increasing oxygen flow ratio. The fabricated TFTs showed a threshold voltage of -0.9 V, mobility of 0.884 cm²/Vs, on-off ratio of 5.5 × 10⁵, and subthreshold swing of 0.41 V/dec.

  7. Fabrication of Polymeric Antireflection Film Manufactured by Anodic Aluminum Oxide Template on Dye-Sensitized Solar Cells

    Directory of Open Access Journals (Sweden)

    Jenn-Kai Tsai

    2017-03-01

    Full Text Available In this study, high energy conversion efficient dye-sensitized solar cells (DSSCs were successfully fabricated by attaching a double anti-reflection (AR layer, which is composed of a subwavelength moth-eye structured polymethyl methacrylate (PMMA film and a polydimethylsiloxane (PDMS film. An efficiency of up to 6.79% was achieved. The moth-eye structured PMMA film was fabricated by using an anodic aluminum oxide (AAO template which is simple, low-cost and scalable. The nano-pattern of the AAO template was precisely reproduced onto the PMMA film. The photoanode was composed of Titanium dioxide (TiO2 nanoparticles (NPs with a diameter of 25 nm deposited on the fluorine-doped tin oxide (FTO glass substrate and the sensitizer N3. The double AR layer was proved to effectively improve the short-circuit current density (JSC and conversion efficiency from 14.77 to 15.79 mA/cm2 and from 6.26% to 6.79%, respectively.

  8. Hydrophilicity Reinforced Adhesion of Anodic Alumina Oxide Template Films to Conducting Substrates for Facile Fabrication of Highly Ordered Nanorod Arrays.

    Science.gov (United States)

    Wang, Chuanju; Wang, Guiqiang; Yang, Rui; Sun, Xiangyu; Ma, Hui; Sun, Shuqing

    2017-01-17

    Arrays of ordered nanorods are of special interest in many fields. However, it remains challenging to obtain such arrays on conducting substrates in a facile manner. In this article, we report the fabrication of highly ordered and vertically standing nanorod arrays of both metals and semiconductors on Au films and indium tin oxide glass substrates without an additional layering. In this approach, following the simple hydrophilic treatment of an anodic aluminum oxide (AAO) membrane and conducting substrates, the AAO membrane was transferred onto the modified substrates with excellent adhesion. Subsequently, nanorod arrays of various materials were electrodeposited on the conducting substrates directly. This method avoids any expensive and tedious lithographic and ion milling process, which provides a simple yet robust route to the fabrication of arrays of 1D materials with high aspect ratio on conducting substrates, which shall pave the way for many practical applications in a range of fields.

  9. Roll-to-roll fabrication of a low-reflectance transparent conducting oxide film with subwavelength structures

    Science.gov (United States)

    Chou, Ta-Hsin; Cheng, Kuei-Yuan; Hsieh, Chih-Wei; Takaya, Yasuhiro

    2012-04-01

    The transparent conducting oxide (TCO) film is a significant component in flat panel display, e-paper and touch panel. The tin-doped indium oxide (ITO) material is one of the most popular TCOs. However, ITO has high refractive index, so the phenomenon of high-reflectance limits the wide use of ITO. In this study, the structure and mass production process of new low-reflectance TCO film is verified. Laser interference lithography and the roll-to-roll UV embossing process are used to fabricate subwavelength structures on PET film; then ITO was deposited on structures by roll-to-roll sputtering. When the dimension of structures reaches 300 nm pitch, the optical reflectance and electrical performance of film are reduced to 8.1% at wavelength 550 nm and its transmittance rate is 84.3% at the same wavelength, and the sheet resistance of this film is 50.44 Ω/□. This result indicates that the new TCO proposed in this study is suitable for touch panel and other display applications.

  10. Fabrication of band gap engineered nanostructured tri-metallic (Mn-Co-Ti) oxide thin films

    Science.gov (United States)

    Mansoor, Muhammad Adil; Yusof, Farazila Binti; Nay-Ming, Huang

    2018-04-01

    In continuation of our previous studies on photoelectrochemical (PEC) properties of titanium based composite oxide thin films, an effort is made to develop thin films of 1:1:2 manganese-cobalt-titanium oxide composite, Mn2O3-Co2O3-4TiO2 (MCT), using Co(OAc)2 and a bimetallic manganese-titanium complex, [Mn2Ti4(TFA)8(THF)6(OH)4(O)2].0.4THF (1), where OAc = acetato, TFA = trifluoroacetato and THF = tetrahydrofuran, via aerosol-assisted chemical vapour deposition (AACVD) technique. The X-ray diffraction (XRD), field emission scanning electron microscopy (FESEM) and energy dispersive X-ray (EDX) spectroscopic analyses confirmed formation of thin film of Mn2O3-Co2O3-4TiO2 composite material with uniformly distributed agglomerated particles. The average size of 39.5 nm, of the particles embedded inside agglomerates, was estimated by Scherer's equation. Further, UV-Vis spectroscopy was used to estimate the band gap of 2.62 eV for MCT composite thin film.

  11. Solution-Processed Inorganic Thin Film Transistors Fabricated from Butylamine-Capped Indium-Doped Zinc Oxide Nanocrystals

    Energy Technology Data Exchange (ETDEWEB)

    Pham, Hien Thu; Jeong, Hyundam [Chonnam National Univ., Gwangju (Korea, Republic of)

    2014-02-15

    Indium-doped zinc oxide nanocrystals (IZO NCs), capped with stearic acid (SA) of different sizes, were synthesized using a hot injection method in a noncoordinating solvent 1-octadecene (ODE). The ligand exchange process was employed to modify the surface of IZO NCs by replacing the longer-chain ligand of stearic acid with the shorter-chain ligand of butylamine (BA). It should be noted that the ligand-exchange percentage was observed to be 75%. The change of particle size, morphology, and crystal structures were obtained using a field emission scanning electron microscope (FE-SEM) and X-ray diffraction pattern results. In our study, the 5 nm and 10 nm IZO NCs capped with stearic acid (SA-IZO) were ligand-exchanged with butylamine (BA), and were then spin-coated on a thermal oxide (SiO{sub 2}) gate insulator to fabricate a thin film transistor (TFT) device. The films were then annealed at various temperatures: 350 .deg. C, 400 .deg. C, 500 .deg. C, and 600 .deg. C. All samples showed semiconducting behavior and exhibited n-channel TFT{sup -} Curing temperature dependent on mobility was observed. Interestingly, mobility decreases with the increasing size of NCs from 5 to 10 nm. Miller-Abrahams hopping formalism was employed to explain the hopping mechanism insight our IZO NC films. By focusing on the effect of size, different curing temperatures, electron coupling, tunneling rate, and inter-NC separation, we found that the decrease in electron mobility for larger NCs was due to smaller electronic coupling.

  12. Photocatalytic evaluation of self-assembled porous network structure of ferric oxide film fabricated by dry deposition process

    Energy Technology Data Exchange (ETDEWEB)

    Park, Yunchan; Kim, Hyungsub; Lee, Geon-Yong; Pawar, Rajendra C.; Lee, Jai-Sung; Lee, Caroline Sunyong, E-mail: sunyonglee@hanyang.ac.kr

    2016-09-15

    Ferric oxide powder in the alpha phase (α-Fe{sub 2}O{sub 3}) was deposited on an aluminum oxide (Al{sub 2}O{sub 3}) substrate by a nanoparticle deposition system using the dry deposition method. X-ray diffraction (XRD) images confirmed that the phase of the deposited α-Fe{sub 2}O{sub 3} did not change. The deposited α-Fe{sub 2}O{sub 3} was characterized in terms of its microstructure using scanning electron microscopy (SEM). A porous network microstructure formed when small agglomerates of Fe{sub 2}O{sub 3} (SAF) were deposited. The deposition and formation mechanism of the microstructure were investigated using SEM and three-dimensional (3D) profile analysis. First, a dense coating layer formed when the film was thinner than the particle size. After that, as the film thickness increased to over 5 μm, the porous network structure formed by excavating the surface of the coating layer as it was bombarded by particles. Rhodamine B (RhB) was degraded after 6 h of exposure to the Fe{sub 2}O{sub 3} coating layer with SAF, which has good photocatalytic activity and a high porous network structure. The kinetic rate constants of the SAF and large agglomerates of Fe{sub 2}O{sub 3} (LAF) were calculated to be 0.197(h{sup −1}) and 0.128(h{sup −1}), respectively, based on the absorbance results. Using linear sweep voltammetry, we confirmed that the photoelectric effect occurred in the coating layer by measuring the resulting current under illuminated and dark conditions. - Graphical abstract: Self-assembled porous photocatalytic film fabricated by dry deposition method for water purification. - Highlights: • Different sizes of Fe{sub 2}O{sub 3} agglomerates were used to form porous network structure. • Fe{sub 2}O{sub 3} agglomerate particles were deposited using solvent-free process. • Self-assembled porous network microstructure formed better with small agglomerates of Fe{sub 2}O{sub 3}. • Fabricated porous network structure showed its potential to be used

  13. Fabrication of SnO2-Reduced Graphite Oxide Monolayer-Ordered Porous Film Gas Sensor with Tunable Sensitivity through Ultra-Violet Light Irradiation

    Science.gov (United States)

    Xu, Shipu; Sun, Fengqiang; Yang, Shumin; Pan, Zizhao; Long, Jinfeng; Gu, Fenglong

    2015-01-01

    A new graphene-based composite structure, monolayer-ordered macroporous film composed of a layer of orderly arranged macropores, was reported. As an example, SnO2-reduced graphite oxide monolayer-ordered macroporous film was fabricated on a ceramic tube substrate under the irradiation of ultra-violet light (UV), by taking the latex microsphere two-dimensional colloid crystal as a template. Graphite oxide sheets dispersed in SnSO4 aqueous solution exhibited excellent affinity with template microspheres and were in situ incorporated into the pore walls during UV-induced growth of SnO2. The growing and the as-formed SnO2, just like other photocatalytic semiconductor, could be excited to produce electrons and holes under UV irradiation. Electrons reduced GO and holes adsorbed corresponding negative ions, which changed the properties of the composite film. This film was directly used as gas-sensor and was able to display high sensitivity in detecting ethanol gas. More interestingly, on the basis of SnO2-induced photochemical behaviours, this sensor demonstrated tunable sensitivity when UV irradiation time was controlled during the fabrication process and post in water, respectively. This study provides efficient ways of conducting the in situ fabrication of a semiconductor-reduced graphite oxide film device with uniform surface structure and controllable properties. PMID:25758292

  14. Oxide Semiconductor-Based Flexible Organic/Inorganic Hybrid Thin-Film Transistors Fabricated on Polydimethylsiloxane Elastomer.

    Science.gov (United States)

    Jung, Soon-Won; Choi, Jeong-Seon; Park, Jung Ho; Koo, Jae Bon; Park, Chan Woo; Na, Bock Soon; Oh, Ji-Young; Lim, Sang Chul; Lee, Sang Seok; Chu, Hye Yong

    2016-03-01

    We demonstrate flexible organic/inorganic hybrid thin-film transistors (TFTs) on a polydimethysilox- ane (PDMS) elastomer substrate. The active channel and gate insulator of the hybrid TFT are composed of In-Ga-Zn-O (IGZO) and blends of poly(vinylidene fluoride-trifluoroethylene) [P(VDF- TrFE)] with poly(methyl methacrylate) (PMMA), respectively. It has been confirmed that the fabri- cated TFT display excellent characteristics: the recorded field-effect mobility, sub-threshold voltage swing, and I(on)/I(off) ratio were approximately 0.35 cm2 V(-1) s(-1), 1.5 V/decade, and 10(4), respectively. These characteristics did not experience any degradation at a bending radius of 15 mm. These results correspond to the first demonstration of a hybrid-type TFT using an organic gate insulator/oxide semiconducting active channel structure fabricated on PDMS elastomer, and demonstrate the feasibility of a promising device in a flexible electronic system.

  15. Micro-nano zinc oxide film fabricated by biomimetic mineralization: Designed architectures for SERS substrates

    Science.gov (United States)

    Lu, Fei; Guo, Yue; Wang, Yunxin; Song, Wei; Zhao, Bing

    2018-05-01

    In this study, we have investigated the effect of the surface morphologies of the zinc oxide (ZnO) substrates on surface enhanced Raman spectroscopy (SERS). During synthetic process, the self-assembly monolayers (SAMs) with different terminal groups are used as templates to induce the nucleation and growth of Zn(NO3)2·6H2O crystals, then different morphologies micro-nano ZnO powders are obtained by annealing Zn(NO3)2·6H2O crystals at 450 °C. The products obtained at different conditions are characterized by means of X-ray diffraction (XRD) patterns, scanning electron microscopy (SEM) and Raman spectra. The as-prepared ZnO micro-sized particles have been used the efficient Surface enhanced Raman scattering (SERS) substrates, and the SERS signals of 4-mercaptopyridine (Mpy) probe molecules are much influenced by the morphologies of the ZnO structures. Results indicated that the more (0001) facets appear in the of ZnO morphology, the greater degree of charge-transfer (PCT) for the SERS enhancement on the surface of semiconductors is achieved. The chemical interaction between ZnO structures and Mpy molecules plays a very important role in the SERS enhancement.

  16. Growth and characterization of tin oxide thin films and fabrication of transparent p-SnO/n-ZnO p–n hetero junction

    Energy Technology Data Exchange (ETDEWEB)

    Sanal, K.C., E-mail: sanalcusat@gmail.com [Nanophotonic and Optoelectronic Devices Laboratory, Department of Physics, Cochin University of Science and Technology, Kerala 682 022 (India); Inter University Center for Nanomaterials and Devices (IUCND), Cochin University of Science and Technology (India); Jayaraj, M.K. [Nanophotonic and Optoelectronic Devices Laboratory, Department of Physics, Cochin University of Science and Technology, Kerala 682 022 (India)

    2013-07-01

    Highlights: • Growth of p-type semiconducting SnO thin films by rf sputtering. • Varying the type of charge carriers with oxygen partial pressure. • Atomic percentage of SnO{sub x} thin films from the XPS analysis. • Demonstration of transparent p–n hetero junctions fabricated in the structure glass/ITO/n-ZnO/p-SnO. -- Abstract: p-Type and n-type tin oxide thin films were deposited by rf-magnetron sputtering of metal tin target by varying the oxygen pressure. Chemical composition of SnO thin film according to the intensity of the XPS peak is about 48.85% and 51.15% for tin and oxygen respectively. Nearest neighbor distance of the atoms calculated from SAED patterns is 2.9 Åand 2.7 Åfor SnO and SnO{sub 2} respectively. The Raman scattering spectrum obtained from SnO thin films showed two peaks, one at 113 cm{sup −1} and the other at 211 cm{sup −1}. Band gap of as-deposited SnO{sub x} thin films vary from 1.6 eV to 3.2 eV on varying the oxygen partial pressure from 3% to 30% which indicates the oxidization of metallic phase Sn to SnO and SnO{sub 2}. p-Type conductivity of SnO thin films and n-type conductivity of SnO{sub 2} thin films were confirmed through Hall coefficient measurement. Transparent p–n hetero junction fabricated in the structure glass/ITO/n-ZnO/p-SnO shows rectification with forward to reverse current ratio as 12 at 4.5 V.

  17. Fabrication of zinc indium oxide thin films and effect of post annealing on structural, chemical and electrical properties

    Energy Technology Data Exchange (ETDEWEB)

    Jain, Vipin Kumar, E-mail: vipinjain7678@gmail.com [Institute of Engineering and Technology, JK Lakshmipat University, Jaipur 302026 (India); Kumar, Praveen [Jawaharlal Nehru Centre for Advanced Scientific Research, Jakkur, Bangalore 560064 (India); Srivastava, Subodh; Vijay, Y.K. [Thin film and Membrane Science Laboratory, University of Rajasthan, Jaipur 302004 (India)

    2012-07-25

    Highlights: Black-Right-Pointing-Pointer ZIO films have been prepared by flash evaporation. Black-Right-Pointing-Pointer Thermal stability of ZIO films. Black-Right-Pointing-Pointer Structural, optical, electrical and other properties have been studied. - Abstract: In the present study, zinc indium oxide (ZIO) thin films were deposited on glass substrate with varying concentration (ZnO:In{sub 2}O{sub 3} - 100:0, 90:10, 70:30 and 50:50 wt.%) at room temperature by flash evaporation technique. These deposited ZIO films were annealed in vacuum to study the thermal stability and to see the effects on the structural, chemical and electrical properties. The XRD analysis indicates that crystallization of the ZIO films strongly depends on concentration of In{sub 2}O{sub 3} and post annealing where annealed films showed polycrystalline nature. The surface morphological study of the films using scanning electron microscopy (SEM) revealed the formation of nanostructured ZIO thin films. The surface composition and oxidation state were analyzed by X-ray photoelectron spectroscopy. XPS spectra shows that as the concentration of In{sub 2}O{sub 3} increases from 10 to 50 wt%, the surface composition ratio In/Zn and O/Zn increases for as-prepared and annealed ZIO films while the XPS valance band spectra manifest the electronic transitions. The electrical resistivity was found to be decreased while carrier concentration and Hall mobility increased for both types of films with increasing concentration of In{sub 2}O{sub 3}.

  18. Fabrication and Evaluation of One-Axis Oriented Lead Zirconate Titanate Films Using Metal-Oxide Nanosheet Interface Layer

    Science.gov (United States)

    Minemura, Yoshiki; Nagasaka, Kohei; Kiguchi, Takanori; Konno, Toyohiko J.; Funakubo, Hiroshi; Uchida, Hiroshi

    2013-09-01

    Nanosheet Ca2Nb3O20 (ns-CN) layers with pseudo-perovskite-type crystal configuration were applied on the surface of polycrystalline metal substrates to achieve preferential crystal orientation of Pb(Zr,Ti)O3 (PZT) films for the purpose of enhanced ferroelectricity comparable to that of epitaxial thin films. PZT films with tetragonal symmetry (Zr/Ti=0.40:0.60) were fabricated by chemical solution deposition (CSD) on ns-CN-buffered Inconel 625 and SUS 316L substrates, while ns-CN was applied on the the substrates by dip-coating. The preferential crystal growth on the ns-CN layer can be achieved by favorable lattice matching between (001)/(100)PZT and (001)ns-CN planes. The degree of (001) orientation was increased for PZT films on ns-CN/Inconel 625 and ns-CN/SUS 316L substrates, whereas randomly-oriented PZT films with a lower degree of (001) orientation were grown on bare and Inconel 625 films. Enhanced remanent polarization of 60 µC/cm2 was confirmed for the PZT films on ns-CN/metal substrates, ascribed to the preferential alignment of the polar [001] axis normal to the substrate surface, although it also suffered from higher coercive field above 500 kV/cm caused by PZT/metal interfacial reaction.

  19. Fabrication of high-performance InGaZnOx thin film transistors based on control of oxidation using a low-temperature plasma

    Science.gov (United States)

    Takenaka, Kosuke; Endo, Masashi; Uchida, Giichiro; Setsuhara, Yuichi

    2018-04-01

    This work demonstrated the low-temperature control of the oxidation of Amorphous InGaZnOx (a-IGZO) films using inductively coupled plasma as a means of precisely tuning the properties of thin film transistors (TFTs) and as an alternative to post-deposition annealing at high temperatures. The effects of the plasma treatment of the as-deposited a-IGZO films were investigated by assessing the electrical properties of TFTs incorporating these films. A TFT fabricated using an a-IGZO film exposed to an Ar-H2-O2 plasma at substrate temperatures as low as 300 °C exhibited the best performance, with a field effect mobility as high as 42.2 cm2 V-1 s-1, a subthreshold gate voltage swing of 1.2 V decade-1, and a threshold voltage of 2.8 V. The improved transfer characteristics of TFTs fabricated with a-IGZO thin films treated using an Ar-H2-O2 plasma are attributed to the termination of oxygen vacancies around Ga and Zn atoms by OH radicals in the gas phase.

  20. Thin film fabrication and transport properties of the heavy Fermion oxide LiV{sub 2}O{sub 4}

    Energy Technology Data Exchange (ETDEWEB)

    Niemann, Ulrike [Max Planck Institute for Solid State Research, Stuttgart (Germany); Hirai, Daigorou [University of Tokyo, Tokyo (Japan); Takagi, Hidenori [Max Planck Institute for Solid State Research, Stuttgart (Germany); University of Tokyo, Tokyo (Japan); Institute for Functional Matter and Quantum Technologies, University of Stuttgart, Stuttgart (Germany)

    2016-07-01

    The spinel compound LiV{sub 2}O{sub 4} is well-known for its heavy fermion behaviour, although it contains no f-electron bands. This unexpected behaviour has been a subject of several studies, but the origin of it is still not fully understood. In this study, we successfully fabricated single crystalline epitaxial thin film of LiV{sub 2}O{sub 4} on SrTiO{sub 3}, LSAT and MgO substrates, using a pulsed laser deposition technique. By changing film thickness and substrate materials, dimensionality and epitaxial strain was controlled. The formation of an epitaxially grown LiV{sub 2}O{sub 4} phase has been confirmed by X-ray diffraction measurements. LiV{sub 2}O{sub 4} films on MgO were found to be strained, due to the small lattice mismatch, in contrast to fully relaxed films on SrTiO{sub 3}.The heavy fermion behaviour of bulk LiV{sub 2}O{sub 4} at low temperatures is well reproduced in thick enough (∼ 7 nm) films on SrTiO{sub 3} substrates. In contrast, an insulating phase was found in strained LiV{sub 2}O{sub 4} thin films on MgO substrates, revealing the key role of the lattice in stabilising the metallic ground state. In this presentation, we discuss the thin film fabrication and the effect of epitaxial strain on heavy fermion behaviour in LiV{sub 2}O{sub 4}.

  1. Nickel oxide film with open macropores fabricated by surfactant-assisted anodic deposition for high capacitance supercapacitors.

    Science.gov (United States)

    Wu, Mao-Sung; Wang, Min-Jyle

    2010-10-07

    Nickel oxide film with open macropores prepared by anodic deposition in the presence of surfactant shows a very high capacitance of 1110 F g(-1) at a scan rate of 10 mV s(-1), and the capacitance value reduces to 950 F g(-1) at a high scan rate of 200 mV s(-1).

  2. Fabrication of reduced graphene oxide nanosheets doped PVA composite films for tailoring their opto-mechanical properties

    Science.gov (United States)

    Aslam, Muhammad; Kalyar, Mazhar Ali; Raza, Zulfiqar Ali

    2017-06-01

    Laminar graphene nanosheets have raised passionate attention due to their incredible physico-chemical properties. Its wide-scale, high-yield production at low-cost has made it possible to produce top class promising versatile polymer nanocomposites. Reduced graphene oxide (RGO) nanosheets were incorporated to prepare optically tunable and high mechanical strength polymer nanocomposite films. RGO-doped poly(vinyl alcohol) (PVA) nanocomposite films were prepared via solution casting. Low level RGO doping significantly altered the structural, optical and mechanical properties of pure PVA films. Most of the band structure parameters like direct/indirect band gap, band tail, refractive index, dielectric constant, optical conductivity and dispersion parameters were investigated in detail for the first time. Tauc's, Wemple-DiDomenico, Helpin-Tsai and mixture rule models were employed to investigate optical and mechanical parameters. The applied models reinforced the experimental results in the present study. Advanced analytical techniques were engaged to characterize the nanocomposites films.

  3. Performance evaluation of solid oxide fuel cells with thin film electrolyte fabricated by binder-assisted slurry casting

    Energy Technology Data Exchange (ETDEWEB)

    Guo, W.M.; Liu, X.M.; Li, L.J. [Department of Biological and Chemical Engineering, Guangxi University of Technology, Liuzhou 545006 (China); Xiao, Y.F. [Department of Stomatology, Liuzhou Maternity and Child Health Hospital, Liuzhou 545001 (China); Chen, Y. [School of Yingdong Life Science, Shaoguan University, Shaoguan 512005 (China)

    2011-10-15

    A gas-tight yttria-stabilized zirconia (YSZ) electrolyte film was fabricated on porous NiO-YSZ anode substrates by a binder-assisted slurry casting technique. The scanning electron microscope (SEM) results showed that the YSZ film was relatively dense with a thickness of 10 {mu}m. La{sub 0.8}Sr{sub 0.2}MnO{sub 3} (LSM)-YSZ was applied to cathode using a screen-print technique and the single fuel cells were tested in a temperature range from 600 to 800 C. An open circuit voltage (OCV) of over 1.0 V was observed. The maximum power densities at 600, 700, and 800 C were 0.13, 0.44, and 1.1 W cm{sup -2}, respectively. (Copyright copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  4. Fabrication of oxide-free graphene suspension and transparent thin films using amide solvent and thermal treatment

    International Nuclear Information System (INIS)

    Oh, Se Young; Kim, Sung Hwan; Chi, Yong Seung; Kang, Tae Jin

    2012-01-01

    Graphical abstract: New methodology for suspended graphene sheets of high-quality (oxide-free), high-yield (high concentration) using amide solvent exfoliation and thermal treatment at 800 °C. We confirmed that the van der Waals force between the graphene layers decreases as increasing thermal treatment temperatures as shown XRD data (b). Highlights: ► Propose of new methodology to prepare oxide-free graphene sheets suspension. ► The graphene suspension concentration is enhanced by thermal treatment. ► Decrease of van der Waals force between the graphene layers by high temperature and pressure. ► This method has the potential as technology for mass production. ► It could be applied in transparent and flexible electronic devices. - Abstract: High quality graphene sheets were produced from graphite by liquid phase exfoliation using N-methyl-2-pyrrolidone (NMP) and a subsequent thermal treatment to enhance the exfoliation. The exfoliation was enhanced by treatment with organic solvent and high thermal expansion producing high yields of the high-quality and defect-free graphene sheets. The graphene was successfully deposited on a flexible and transparent polymer film using the vacuum filtration method. SEM images of thin films of graphene treated at 800 °C showed uniform structure with no defects commonly found in films made of graphene produced by other techniques. Thin films of graphene prepared at higher temperatures showed superior transmittance and conductivity. The sheet-resistance of the graphene film treated at 800 °C was 2.8 × 10 3 kΩ/□ with 80% transmittance.

  5. The Optical Properties of Thin Film Reduced Graphene Oxide/Poly (3,4 Ethylenedioxtriophene):Poly (Styrene Sulfonate)(PEDOT:PSS) Fabricated by Spin Coating

    Science.gov (United States)

    Rokmana, Arinta W.; Asriani, A.; Suhendar, H.; Triyana, K.; Kusumaatmaja, A.; Santoso, I.

    2018-04-01

    Reduced Graphene Oxide (rGO) has been successfully synthesized from Graphite powder through chemical process using modified Hummers method by removing NaNO3 from reaction formula. Hydrazine hydrate 80 wt% has been chosen as reductor to eliminate the epoxy group in GO. FTIR and Uv-Vis spectroscopy result showed that Graphene Oxide (GO) and rGO were formed. Our produced rGO then used to fabricated the composite thin film rGO/PEDOT:PSS by spin coating at room temperature. The optical constant of thin film rGO/PEDOT:PSS were calculated from the absorbance spectrum of Uv-Visible spectra. The result showed that the value of coefficient absorbance of rGO dropped from 4.7×106 m-1 to 1.3×106 m-1 after doped with 0.02 mL PEDOT:PSS, then increase with the addition volume concentration of PEDOT:PSS. The value of extinction coefficient decrease from 0.31 to 0.08 after rGO doped with 0.02 ml PEDOT:PSS and then increase with the addition concentration of PEDOT:PSS. Our result show that thin film rGO/PEDOT:PSS was more transparent than that of thin film rGO.

  6. Stabilized chromium oxide film

    Science.gov (United States)

    Garwin, Edward L.; Nyaiesh, Ali R.

    1988-01-01

    Stabilized air-oxidized chromium films deposited on high-power klystron ceramic windows and sleeves having a thickness between 20 and 150.ANG. are useful in lowering secondary electron emission yield and in avoiding multipactoring and window failure due to overheating. The ceramic substrate for the film is chosen from alumina, sapphire or beryllium oxide.

  7. Nanocrystal thin film fabrication methods and apparatus

    Science.gov (United States)

    Kagan, Cherie R.; Kim, David K.; Choi, Ji-Hyuk; Lai, Yuming

    2018-01-09

    Nanocrystal thin film devices and methods for fabricating nanocrystal thin film devices are disclosed. The nanocrystal thin films are diffused with a dopant such as Indium, Potassium, Tin, etc. to reduce surface states. The thin film devices may be exposed to air during a portion of the fabrication. This enables fabrication of nanocrystal-based devices using a wider range of techniques such as photolithography and photolithographic patterning in an air environment.

  8. Fabrication and properties of multiferroic nanocomposite films

    KAUST Repository

    Al-Nassar, Mohammed Y.; Ivanov, Yurii P.; Kosel, Jü rgen

    2015-01-01

    A new type of multiferroic polymer nanocomposite is presented, which exhibits excellent ferromagnetism and ferroelectricity simultaneously at room temperature. The multiferroic nanocomposite consists of a ferroelectric copolymer poly(vinylindene fluoride-trifluoroethylene) [P(VDF-TrFE)] and high aspect ratio ferromagnetic nickel (Ni) nanowires (NWs), which were grown inside anodic aluminum oxide membranes. The fabrication of nanocomposite films with Ni NWs embedded in P(VDF-TrFE) has been successfully carried out via a simple low-temperature spin-coating technique. Structural, ferromagnetic, and ferroelectric properties of the developed nanocomposite have been investigated. The remanent and saturation polarization as well as the coercive field of the ferroelectric phase are slightly affected by the incorporation of the NWs as well as the thickness of the films. While the former two decrease, the last increases by adding the NWs or increasing the thickness. The ferromagnetic properties of the nanocomposite films are found to be isotropic.

  9. Oxidation films morphology

    International Nuclear Information System (INIS)

    Paidassi, J.

    1960-01-01

    After studying the oxidation of several pure polyvalent metals (Fe, Cu, Mn, Ni, U) and of their oxides at high temperature and atmospheric pressure, the author suggests how to modify the usual representation of the oxide film (a piling of different oxide layers, homogeneous on a micrographic scale with a equi-axial crystallisation, free of mechanical tensions, with flat boundary surfaces) to have it nearer to reality. In this first part, the author exposes the study of the real micrographic structure of the oxidation film and gives examples of precipitation in the oxides during the cooling of the oxidised sample. (author) [fr

  10. Indium oxide co-doped with tin and zinc: A simple route to highly conducting high density targets for TCO thin-film fabrication

    Science.gov (United States)

    Saadeddin, I.; Hilal, H. S.; Decourt, R.; Campet, G.; Pecquenard, B.

    2012-07-01

    Indium oxide co-doped with tin and zinc (ITZO) ceramics have been successfully prepared by direct sintering of the powders mixture at 1300 °C. This allowed us to easily fabricate large highly dense target suitable for sputtering transparent conducting oxide (TCO) films, without using any cold or hot pressing techniques. Hence, the optimized ITZO ceramic reaches a high relative bulk density (˜ 92% of In2O3 theoretical density) and higher than the well-known indium oxide doped with tin (ITO) prepared under similar conditions. All X-ray diagrams obtained for ITZO ceramics confirms a bixbyte structure typical for In2O3 only. This indicates a higher solubility limit of Sn and Zn when they are co-doped into In2O3 forming a solid-solution. A very low value of electrical resistivity is obtained for [In2O3:Sn0.10]:Zn0.10 (1.7 × 10-3 Ω cm, lower than ITO counterpart) which could be fabricated to high dense ceramic target suing pressure-less sintering.

  11. Polyester fabric coated with Ag/ZnO composite film by magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Yuan, Xiaohong, E-mail: yxhong1981_2004@126.com [Key Laboratory of Eco-Textiles, Ministry of Education, Jiangnan University, Wuxi 214122, Jiangsu (China); Faculty of Clothing and Design, Minjiang University, Fuzhou 350121, Fujian (China); Xu, Wenzheng, E-mail: xwz8199@126.com [Key Laboratory of Eco-Textiles, Ministry of Education, Jiangnan University, Wuxi 214122, Jiangsu (China); Huang, Fenglin, E-mail: windhuang325@163.com [Key Laboratory of Eco-Textiles, Ministry of Education, Jiangnan University, Wuxi 214122, Jiangsu (China); Chen, Dongsheng, E-mail: mjuchen@126.com [Faculty of Clothing and Design, Minjiang University, Fuzhou 350121, Fujian (China); Wei, Qufu, E-mail: qfwei@jiangnan.edu.cn [Key Laboratory of Eco-Textiles, Ministry of Education, Jiangnan University, Wuxi 214122, Jiangsu (China)

    2016-12-30

    Highlights: • Ag/ZnO composite film was successfully deposited on polyester fabric by magnetron sputtering technique. • Ag film was easily oxidized into Ag{sub 2}O film in high vacuum oxygen environment. • The zinc film coated on the surface of Ag film before RF reactive sputtering could protect the silver film from oxidation. • Polyester fabric coated with Ag/ZnO composite film can obtained structural color. • The anti-ultraviolet and antistatic properties of polyester fabric coated with Ag/ZnO composite film all were good. - Abstract: Ag/ZnO composite film was successfully deposited on polyester fabric by using direct current (DC) magnetron sputtering and radio frequency (RF) magnetron reaction sputtering techniques with pure silver (Ag) and zinc (Zn) targets. X-ray photoelectron spectroscopy (XPS) and X-ray diffraction (XRD) were used to examine the deposited film on the fabric. It was found that the zinc film coated on Ag film before RF reactive sputtering could protect the silver film from oxidation. Anti-ultraviolet property and antistatic property of the coated samples using different magnetron sputtering methods were also investigated. The experimental results showed that Ag film was oxidized into in Ag{sub 2}O film in high vacuum oxygen environment. The deposition of Zn film on the surface of the fabric coated with Ag film before RF reactive sputtering, could successfully obtained Ag/ZnO composite film, and also generated structural color on the polyester fabric.

  12. Low-temperature fabrication of an HfO2 passivation layer for amorphous indium-gallium-zinc oxide thin film transistors using a solution process.

    Science.gov (United States)

    Hong, Seonghwan; Park, Sung Pyo; Kim, Yeong-Gyu; Kang, Byung Ha; Na, Jae Won; Kim, Hyun Jae

    2017-11-24

    We report low-temperature solution processing of hafnium oxide (HfO 2 ) passivation layers for amorphous indium-gallium-zinc oxide (a-IGZO) thin-film transistors (TFTs). At 150 °C, the hafnium chloride (HfCl 4 ) precursor readily hydrolyzed in deionized (DI) water and transformed into an HfO 2 film. The fabricated HfO 2 passivation layer prevented any interaction between the back surface of an a-IGZO TFT and ambient gas. Moreover, diffused Hf 4+ in the back-channel layer of the a-IGZO TFT reduced the oxygen vacancy, which is the origin of the electrical instability in a-IGZO TFTs. Consequently, the a-IGZO TFT with the HfO 2 passivation layer exhibited improved stability, showing a decrease in the threshold voltage shift from 4.83 to 1.68 V under a positive bias stress test conducted over 10,000 s.

  13. Fabrication of highly crystalline oxide thin films on plastics: Sol–gel transfer technique involving high temperature process

    Directory of Open Access Journals (Sweden)

    Hiromitsu Kozuka

    2016-09-01

    Full Text Available Si(100 substrates were coated with a polyimide (PI–polyvinylpyrrolidone (PVP mixture film, and an alkoxide-derived TiO2 gel film was deposited on it by spin-coating. The gel films were fired under various conditions with final annealing at 600–1000 °C. The PI–PVP layer was completely decomposed at such high temperatures while the TiO2 films survived on Si(100 substrates without any damages. When the final annealing temperature was raised, the crystalline phase changed from anatase to rutile, and the crystallite size and the refractive index of the films tended to increase. The TiO2 films thus fired on Si(100 substrates were transferred to polycarbonate (PC substrates by melting the surface of the plastic substrate either in a near-infrared image furnace or on a hot plate under a load. Cycles of deposition and firing were found to be effective in achieving successful transfer even for the films finally annealed at 1000 °C. X-ray photoelectron spectroscopic analyses on the film/Si(100 interface suggested that the residual carbon or carbides at the interface could be a possible factor, but not a necessary and decisive factor that allows the film transfer.

  14. Sputtered indium oxide films

    International Nuclear Information System (INIS)

    Gillery, F.H.

    1986-01-01

    A method is described for depositing on a substrate multiple layer films comprising at least one primary layer of a metal oxide and at least one primary layer of a metal other than the metal of the oxide layer. The improvement described here comprises improving the adhesion between the metal oxide and metal layers by depositing between the layers an intermediate metal-containing layer having an affinity for both the metal and metal oxide layers. An article of manufacture is described comprising a nonmetallic substrate, and deposited thereon in any order: a. at least one coating layer of metal; b. at least one coating layer of an oxide of a metal other than the metal of the metal layer; and c. deposited between the metal and metal oxide layers an intermediate metal-containing layer having an affinity for both the metal and metal oxide layers

  15. Thin film metal-oxides

    CERN Document Server

    Ramanathan, Shriram

    2009-01-01

    Presents an account of the fundamental structure-property relations in oxide thin films. This title discusses the functional properties of thin film oxides in the context of applications in the electronics and renewable energy technologies.

  16. Fabrication of thick superconducting films by decantation

    Directory of Open Access Journals (Sweden)

    Julián Betancourt M.

    1991-07-01

    Full Text Available We have found superconducting behavior in thick films fabricated by decantation. In this paper we present the experimental method and results obtained using commercial copper substrates.

  17. Low-temperature oxidizing plasma surface modification and composite polymer thin-film fabrication techniques for tailoring the composition and behavior of polymer surfaces

    Science.gov (United States)

    Tompkins, Brendan D.

    This dissertation examines methods for modifying the composition and behavior of polymer material surfaces. This is accomplished using (1) low-temperature low-density oxidizing plasmas to etch and implant new functionality on polymers, and (2) plasma enhanced chemical vapor deposition (PECVD) techniques to fabricate composite polymer materials. Emphases are placed on the structure of modified polymer surfaces, the evolution of polymer surfaces after treatment, and the species responsible for modifying polymers during plasma processing. H2O vapor plasma modification of high-density polyethylene (HDPE), low-density polyethylene (LDPE), polypropylene (PP), polystyrene (PS), polycarbonate (PC), and 75A polyurethane (PU) was examined to further our understanding of polymer surface reorganization leading to hydrophobic recovery. Water contact angles (wCA) measurements showed that PP and PS were the most susceptible to hydrophobic recovery, while PC and HDPE were the most stable. X-ray photoelectron spectroscopy (XPS) revealed a significant quantity of polar functional groups on the surface of all treated polymer samples. Shifts in the C1s binding energies (BE) with sample age were measured on PP and PS, revealing that surface reorganization was responsible for hydrophobic recovery on these materials. Differential scanning calorimetry (DSC) was used to rule out the intrinsic thermal properties as the cause of reorganization and hydrophobic recovery on HDPE, LDPE, and PP. The different contributions that polymer cross-linking and chain scission mechanisms make to polymer aging effects are considered. The H2O plasma treatment technique was extended to the modification of 0.2 microm and 3.0 microm track-etched polycarbonate (PC-TE) and track-etched polyethylene terephthalate (PET-TE) membranes with the goal of permanently increasing the hydrophilicity of the membrane surfaces. Contact angle measurements on freshly treated and aged samples confirmed the wettability of the

  18. Rare Earth Oxide Thin Films

    CERN Document Server

    Fanciulli, Marco

    2007-01-01

    Thin rare earth (RE) oxide films are emerging materials for microelectronic, nanoelectronic, and spintronic applications. The state-of-the-art of thin film deposition techniques as well as the structural, physical, chemical, and electrical properties of thin RE oxide films and of their interface with semiconducting substrates are discussed. The aim is to identify proper methodologies for the development of RE oxides thin films and to evaluate their effectiveness as innovative materials in different applications.

  19. Effect of tantalum content of titanium oxide film fabricated by magnetron sputtering on the behavior of cultured human umbilical vein endothelial cells (HUVEC)

    International Nuclear Information System (INIS)

    Chen, J.Y.; Leng, Y.X.; Zhang, X.

    2006-01-01

    In this work, we synthesized titanium oxide thin films containing different tantalum using magnetron sputtering to meet the challenge of enhanced biocompatibility. The structure characteristics of the films were characterized using X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS) and atomic force microscopy (AFM). The biological behavior of human umbilical vein endothelial cells (HUVECs) on the film surface was investigated by in vitro cell culture. Study of cultured HUVEC onto films revealed that the growth and proliferation behavior of EC were varied significantly due to the different Ta content which resulting the characterization of films is different. The adherence, growth, shape and proliferation of EC on Ti-O film with high Ta content and smoother surface was excellent

  20. Fabrication of iron-doped cobalt oxide nanocomposite films by electrodeposition and application as electrocatalyst for oxygen reduction reaction

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, Jingxuan; Wang, Xuemei; Qin, Dongdong; Xue, Zhonghua; Lu, Xiaoquan, E-mail: luxq@nwnu.edu.cn

    2014-11-30

    Highlights: • We fabricated the Fe-doped Co{sub 3}O{sub 4} nanofilms for the first time by potentiostatic electrodeposition method. • The Fe was doped homogeneously in the nanofilms by this method. • Among the different concentration ratios of Co{sup 2+}/Fe{sup 2+}, nanofilm with the ratio of 1:5 exhibits the optimal performance in electrochemical properties assessments. • The Fe-doped Co{sub 3}O{sub 4} nanofilms in this work exhibit good electrocatalytic activity toward oxygen reduction and appear to be promising cathodic electrocatalyst in alkaline fuel cells. - Abstract: In this work, Fe-doped Co{sub 3}O{sub 4} nanofilms were fabricated by electrodeposition on FTO glass substrates for the first time. The structures of the as-prepared nanofilms were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), transmission electron microscopy (TEM) and X-ray photoelectron spectroscopy (XPS). Characterization results demonstrate that Fe was doped homogeneously in the nanofilms. As the different concentration ratios of Fe{sup 2+}/Co{sup 2+} were explored, nanofilm with the ratio of 1:5 exhibits the optimal performance in electrochemical properties assessments. It is considered that the difference in the catalytic activities for the ORR of the samples may be due to the fact that the joining of iron changed the catalyst surface's electric state and enhanced the acidity of cobalt centers, on the other hand, the doping process probably modified the absorption property of the nanofilms. The experimental results suggest that the Fe-doped Co{sub 3}O{sub 4} nanofilms in this work exhibit favorable electrocatalytic activity toward ORR and appear to be promising cathodic electrocatalyst in alkaline fuel cells.

  1. Photocatalytic activity of ferric oxide/titanium dioxide nanocomposite films on stainless steel fabricated by anodization and ion implantation

    Science.gov (United States)

    Zhan, Wei-ting; Ni, Hong-wei; Chen, Rong-sheng; Yue, Gao; Tai, Jun-kai; Wang, Zi-yang

    2013-08-01

    A simple surface treatment was used to develop photocatalytic activity for stainless steel. AISI 304 stainless steel specimens after anodization were implanted by Ti ions at an extracting voltage of 50 kV with an implantation dose of 3 × 1015 atoms·cm-2 and then annealed in air at 450°C for 2 h. The morphology was observed by scanning electron microscopy. The microstructure was characterized by X-ray diffraction and X-ray photoelectron spectroscopy. The photocatalytic degradation of methylene blue solution was carried out under ultraviolet light. The corrosion resistance of the stainless steel was evaluated in NaCl solution (3.5 wt%) by electrochemical polarization curves. It is found that the Ti ions depth profile resembles a Gaussian distribution in the implanted layer. The nanostructured Fe2O3/TiO2 composite film exhibits a remarkable enhancement in photocatalytic activity referenced to the mechanically polished specimen and anodized specimen. Meanwhile, the annealed Ti-implanted specimen remains good corrosion resistance.

  2. One-step fabrication of heterogeneous conducting polymers-coated graphene oxide/carbon nanotubes composite films for high-performance supercapacitors

    International Nuclear Information System (INIS)

    Zhou, Haihan; Han, Gaoyi

    2016-01-01

    Highlights: • CPs-GO/CNTs ternary composites have been prepared via one-step electrodeposition. • The composites show a GO supported CPs-coated CNTs ternary hybrid microstructure. • The capacitive nature of CPs-GO is promoted significantly by introducing CNTs. • CPs-GO/CNTs electrodes show high areal capacitance and excellent cycle stability. - Abstract: Composite films of heterogeneous conducting polymers-coated graphene oxide/carbon nanotubes (CPs-GO/CNTs; CPs, PPy and PEDOT) have been fabricated via one-step electrochemical co-deposition. Scanning electron microscope and transmission electron microscopy characterizations indicate that the as-prepared CPs-GO/CNTs composites show a GO supported CPs-coated CNTs ternary hybrid microstructure. The electrochemical measurements including cyclic voltammetry, galvanostatic charge/discharge measurements, and electrochemical impedance spectroscopy tests manifest that the capacitive performances of CPs-GO electrodes are obviously promoted as the introduction of CNTs, and the PEDOT-GO/CNTs electrodes exhibit the more significantly improved electrochemical performances as the more CNTs introduced. Furthermore, the as-prepared PPy-GO/CNTs and PEDOT-GO/CNTs ternary composites achieve a high areal specific capacitance (142.2 mF cm −2 and 99.0 mF cm −2 at 1.0 mA cm −2 , respectively), together with superior rate capability, and excellent cycle stability (maintain 97.3% and 99.2% of initial capacitance for 5000 cycles, respectively), which are essential for their applications in high-performance supercapacitor electrodes.

  3. Chemical solution deposition of functional oxide thin films

    CERN Document Server

    Schneller, Theodor; Kosec, Marija

    2014-01-01

    Chemical Solution Deposition (CSD) is a highly-flexible and inexpensive technique for the fabrication of functional oxide thin films. Featuring nearly 400 illustrations, this text covers all aspects of the technique.

  4. Fabrication of Nanostructured PLGA Scaffolds Using Anodic Aluminum Oxide Templates

    OpenAIRE

    Hsueh , Cheng-Chih; Wang , Gou-Jen; Hsu , Shan-Hui; Hung , Huey-Shan

    2008-01-01

    Submitted on behalf of EDA Publishing Association (http://irevues.inist.fr/handle/2042/16838); International audience; PLGA (poly(lactic-co-glycolic acid)) is one of the most used biodegradable and biocompatible materials. Nanostructured PLGA even has great application potentials in tissue engineering. In this research, a fabrication technique for nanostructured PLGA membrane was investigated and developed. In this novel fabrication approach, an anodic aluminum oxide (AAO) film was use as the...

  5. In-Ga-Zn-oxide thin-film transistors with Sb2TeOx gate insulators fabricated by reactive sputtering using a metallic Sb2Te target

    International Nuclear Information System (INIS)

    Cheong, Woo-Seok

    2011-01-01

    Using reactive sputtering, we made transparent amorphous Sb 2 TeO x thin films from a metallic Sb 2 Te target in an oxidizing atmosphere. In-Ga-Zn-oxide thin-film transistors (IGZO TFTs) with Sb 2 TeO x gate insulators deposited at room temperature showed a large hysteresis with a counter clockwise direction, which was caused by mobile charges in the gate insulators. The problems of the mobile charges was solved by using Sb 2 TeO x films formed at 250 .deg. C. After the IGZO TFT had been annealed at 200 .deg. C for 1 hour in an O 2 ambient, the mobility of the IGZO TFT was 22.41 cm 2 /Vs, and the drain current on-off ratio was ∼10 8 .

  6. Electrochemistry of hydrous oxide films

    International Nuclear Information System (INIS)

    Burke, L.D.; Lyons, M.E.G.

    1986-01-01

    The formation, acid-base properties, structural aspects, and transport processes of hydrous oxide films are discussed. Classical and nonclassical theoretical models of the oxide-solution interface are compared. Monolayer oxidation, behavior, and crystal growth of oxides on platinum, palladium, gold, iridium, rhodium, ruthenium, and some non-noble metals, including tungsten, are reviewed and compared

  7. Multiple-stimuli responsive bioelectrocatalysis based on reduced graphene oxide/poly(N-isopropylacrylamide) composite films and its application in the fabrication of logic gates.

    Science.gov (United States)

    Wang, Lei; Lian, Wenjing; Yao, Huiqin; Liu, Hongyun

    2015-03-11

    In the present work, reduced graphene oxide (rGO)/poly(N-isopropylacrylamide) (PNIPAA) composite films were electrodeposited onto the surface of Au electrodes in a fast and one-step manner from an aqueous mixture of a graphene oxide (GO) dispersion and N-isopropylacrylamide (NIPAA) monomer solutions. Reflection-absorption infrared (IR) and Raman spectroscopies were employed to characterize the successful construction of the rGO/PNIPAA composite films. The rGO/PNIPAA composite films exhibited reversible potential-, pH-, temperature-, and sulfate-sensitive cyclic voltammetric (CV) on-off behavior to the electroactive probe ferrocenedicarboxylic acid (Fc(COOH)2). For instance, after the composite films were treated at -0.7 V for 7 min, the CV responses of Fc(COOH)2 at the rGO/PNIPAA electrodes were quite large at pH 8.0, exhibiting the on state. However, after the films were treated at 0 V for 30 min, the CV peak currents became much smaller, demonstrating the off state. The mechanism of the multiple-stimuli switchable behaviors for the system was investigated not only by electrochemical methods but also by scanning electron microscopy and X-ray photoelectron spectroscopy. The potential-responsive behavior for this system was mainly attributed to the transformation between rGO and GO in the films at different potentials. The film system was further used to realize multiple-stimuli responsive bioelectrocatalysis of glucose catalyzed by the enzyme of glucose oxidase and mediated by the electroactive probe of Fc(COOH)2 in solution. On the basis of this, a four-input enabled OR (EnOR) logic gate network was established.

  8. Oxide ultrathin films science and technology

    CERN Document Server

    Pacchioni, Gianfranco

    2012-01-01

    A wealth of information in one accessible book. Written by international experts from multidisciplinary fields, this in-depth exploration of oxide ultrathin films covers all aspects of these systems, starting with preparation and characterization, and going on to geometrical and electronic structure, as well as applications in current and future systems and devices. From the Contents: Synthesis and Preparation of Oxide Ultrathin Films Characterization Tools of Oxide Ultrathin Films Ordered Oxide Nanostructures on Metal Surfaces Unusual Properties of Oxides and Other Insulators in the Ultrathin Limit Silica and High-K Dielectrics Thin Films in Microelectronics Oxide Passive Films and Corrosion Protection Oxide Films as Catalytic Materials and as Models of Real Catalysts Oxide Films in Spintronics Oxide Ultrathin Films in Solid Oxide Fuel Cells Transparent Conducting and Chromogenic Oxide Films as Solar Energy Materials Oxide Ultrathin Films in Sensor Applications Ferroelectricity in Ultrathin Film Capacitors T...

  9. Electrochemical fabrication of nanoporous polypyrrole thin films

    International Nuclear Information System (INIS)

    Li Mei; Yuan Jinying; Shi Gaoquan

    2008-01-01

    Polypyrrole thin films with pores in nanometer scale were synthesized by direct electrochemical oxidation of pyrrole in a mixed electrolyte of isopropyl alcohol, boron trifluoride diethyl etherate, sodium dodecylsulfonate and poly(ethylene glycol) using well-aligned ZnO nanowires arrays as templates. The thin films exhibit high conductivity of ca. σ rt ∼ 20.5 s/cm and can be driven to bend during redox processes in 1.0 M lithium perchlorate aqueous solution. The movement rate of an actuator based on this nanoporous film was measured to be over 90 o /s at a driving potential of 0.8 V (vs. Ag/AgCl)

  10. Magnetic properties of partially oxidized Fe films

    Science.gov (United States)

    Garcia, Miguel Angel; Lopez-Dominguez, Victor; Hernando, Antonio

    Hybrid magnetic nanostructures exhibit appealing properties due to interface and proximity effects. A simple and interesting system of hybrid magnetic nanomaterials are partially oxidized ferromagnetic films. We have fabricated Fe films by thermal evaporation and performed a partial oxidation to magnetite (Fe3O4) by annealing in air at different times and temperatures. The magnetic properties of the films evolve from those of pure metallic iron to pure magnetite, showing intermediate states where the proximity effects control the magnetic behavior. At some stages, the magnetization curves obtained by SQUID and MOKE magnetometry exhibit important differences due to the dissimilar contribution of both phases to the magneto-optical response of the system This work has been supported by the Ministerio Español de Economia y Competitividad (MINECO) MAT2013-48009-C4-1. V.L.D and M.A.G. acknowledges financial support from BBVA foundation.

  11. Fabrication of superhydrophobic niobium pentoxide thin films by anodization

    Energy Technology Data Exchange (ETDEWEB)

    Jeong, Bong-Yong [Future Convergence Ceramic Division, Korea Institute of Ceramic Engineering and Technology, Seoul 153-801 (Korea, Republic of); Jung, Eun-Hye [Future Convergence Ceramic Division, Korea Institute of Ceramic Engineering and Technology, Seoul 153-801 (Korea, Republic of); Department of Chemical Engineering, Inha University, Incheon 402-024 (Korea, Republic of); Kim, Jin-Ho, E-mail: jhkim@kicet.re.kr [Electronic and Optic Materials Division, Korea Institute of Ceramic Engineering and Technology, Seoul 153-801 (Korea, Republic of)

    2014-07-01

    We report a simple method to fabricate a niobium oxide film with a lotus-like micro–nano surface structure. Self-assembled niobium pentoxide (Nb{sub 2}O{sub 5}) films with superhydrophobic property were fabricated by an anodization and a hydrophobic treatment. This process has several advantages such as low cost, simplicity and easy coverage of a large area. The surface of fabricated Nb{sub 2}O{sub 5} film was changed from hydrophilic to superhydrophobic surface by a treatment using fluoroaldyltrimethoxysilane (FAS) solution. This value is considered to be the lowest surface free energy of any solid, based on the alignment of -CF{sub 3} groups on the surface. In particular, among FAS coated surfaces, the micro–nano complex cone structured Nb{sub 2}O{sub 5} film showed the highest water-repellent property with a static contact angle of ca. 162°. This study gives promising routes from biomimetic superhydrophobic surfaces.

  12. Process for fabricating mixed-oxide powders

    International Nuclear Information System (INIS)

    Elmaleh, D.; Giraudel, A.

    1975-01-01

    A physical-chemical process for fabricating homogeneous powders suitable for sintering is described. It can be applied to the synthesis of all mixed oxides having mutually compatible and water soluble salts. As a specific example, the fabrication of lead titanate-zirconate powders used to make hot pressed ceramics is described. These ceramics show improved piezoelectric properties [fr

  13. Oxide superconducting ribbon and its fabrication process

    International Nuclear Information System (INIS)

    Belouet, C.

    1990-01-01

    A film without cavities, of perovskite type superconducting oxide is deposited by melting on a metal or composite flexible substrate with a rectangular cross section. The film thickness is comprised between 1 and 100 micrometers and orientation of C axis of superconducting crystals is perpendicular to the subtrate [fr

  14. Fabrication of Robust Biomolecular Patterns by Reactive Microcontact Printing on NHS Ester Containing Polymer Films

    NARCIS (Netherlands)

    Feng, C.L.; Vancso, Gyula J.; Schönherr, Holger

    2006-01-01

    The fabrication of robust biomolecule microarrays by reactive microcontact printing (CP) on spin-coated thin films of poly(N-hydroxysuccinimidyl methacrylate) (PNHSMA) on oxidized silicon and glass is described. The approach combines the advantages of activated polymer thin films as coupling layers,

  15. Electrochemical fabrication of nanoporous polypyrrole thin films

    Energy Technology Data Exchange (ETDEWEB)

    Li Mei [Key Laboratory of Organic Optoelectronics and Molecular Engineering (Ministry of Education), Department of Chemistry, Tsinghua University, Beijing, 100084 (China); Yuan Jinying [Key Laboratory of Organic Optoelectronics and Molecular Engineering (Ministry of Education), Department of Chemistry, Tsinghua University, Beijing, 100084 (China)], E-mail: yuanjy@mail.tsinghua.edu.cn; Shi Gaoquan [Key Laboratory of Organic Optoelectronics and Molecular Engineering (Ministry of Education), Department of Chemistry, Tsinghua University, Beijing, 100084 (China)], E-mail: gshi@mail.tsinghua.edu.cn

    2008-04-30

    Polypyrrole thin films with pores in nanometer scale were synthesized by direct electrochemical oxidation of pyrrole in a mixed electrolyte of isopropyl alcohol, boron trifluoride diethyl etherate, sodium dodecylsulfonate and poly(ethylene glycol) using well-aligned ZnO nanowires arrays as templates. The thin films exhibit high conductivity of ca. {sigma}{sub rt} {approx} 20.5 s/cm and can be driven to bend during redox processes in 1.0 M lithium perchlorate aqueous solution. The movement rate of an actuator based on this nanoporous film was measured to be over 90{sup o}/s at a driving potential of 0.8 V (vs. Ag/AgCl)

  16. Fabrication of a large area cathode-supported thin electrolyte film for solid oxide fuel cells via tape casting and co-sintering techniques

    Energy Technology Data Exchange (ETDEWEB)

    Zhao, Chunhua; Liu, Renzhu; Wang, Shaorong; Wen, Tinglian [Shanghai Institute of Ceramics, Chinese Academy of Sciences (SICCAS), 1295 Dingxi Road, Shanghai 200050 (China)

    2009-04-15

    A large area cathode-supported electrolyte film, comprising porous (La{sub 0.8}Sr{sub 0.2}){sub 0.95}MnO{sub 3} (LSM95) cathode substrate, LSM95/Zr{sub 0.89}Sc{sub 0.1}Ce{sub 0.01}O{sub 2-x} (SSZ) cathode active layer, and SSZ electrolyte, has been successfully fabricated by tape casting and co-sintering techniques. The interface reaction between cathode and electrolyte was inhibited by using A-site deficient LSM. A dense enough SSZ thin film with a thickness of {proportional_to}26 {mu}m was obtained at 1250 C. By using Pt as anode, the obtained single cell reached the maximum power density of 0.54 W cm{sup -2} at 800 C in O{sub 2}/humidified H{sub 2}, with open circuit voltage (OCV) value of 1.08 V. (author)

  17. Photoconduction in silicon rich oxide films

    Energy Technology Data Exchange (ETDEWEB)

    Luna-Lopez, J A; Carrillo-Lopez, J; Flores-Gracia, F J; Garcia-Salgado, G [CIDS-ICUAP, Benemerita Universidad Autonoma de Puebla. Ed. 103 D and C, col. San Manuel, Puebla, Pue. Mexico 72570 (Mexico); Aceves-Mijares, M; Morales-Sanchez, A, E-mail: jluna@buap.siu.m, E-mail: jluna@inaoep.m [INAOE, Luis Enrique Erro No. 1, Apdo. 51, Tonantzintla, Puebla, Mexico 72000 (Mexico)

    2009-05-01

    Photoconduction of silicon rich oxide (SRO) thin films were studied by current-voltage (I-V) measurements, where ultraviolet (UV) and white (Vis) light illumination were applied. SRO thin films were deposited by low pressure chemical vapour deposition (LPCVD) technique, using SiH{sub 4} (silane) and N{sub 2}O (nitrous oxide) as reactive gases at 700 {sup 0}. The gas flow ratio, Ro = [N{sub 2}O]/[SiH{sub 4}] was used to control the silicon excess. The thickness and refractive index of the SRO films were 72.0 nm, 75.5 nm, 59.1 nm, 73.4 nm and 1.7, 1.5, 1.46, 1.45, corresponding to R{sub o} = 10, 20, 30 and 50, respectively. These results were obtained by null ellipsometry. Si nanoparticles (Si-nps) and defects within SRO films permit to obtain interesting photoelectric properties as a high photocurrent and photoconduction. These effects strongly depend on the silicon excess, thickness and structure type. Two different structures (Al/SRO/Si and Al/SRO/SRO/Si metal-oxide-semiconductor (MOS)-like structures) were fabricated and used as devices. The photocurrent in these structures is dominated by the generation of carriers due to the incident photon energies ({approx}3.0-1.6 eV and 5 eV). These structures showed large photoconductive response at room temperature. Therefore, these structures have potential applications in optoelectronics devices.

  18. Reactivity and stability of thallium oxide for fabricating TlSnZnO toward thin-film transistors with high mobility

    Energy Technology Data Exchange (ETDEWEB)

    Kishimoto, Katsushi [Graduate School of Materials Science, Nara Institute of Science and Technology, Nara, 630-0192 (Japan); Nose, Yoshitaro [Department of Materials Science and Engineering, Kyoto University, Kyoto, 606-8501 (Japan); Ishikawa, Yasuaki, E-mail: yishikawa@ms.naist.jp [Graduate School of Materials Science, Nara Institute of Science and Technology, Nara, 630-0192 (Japan); Fujii, Mami N.; Uraoka, Yukiharu [Graduate School of Materials Science, Nara Institute of Science and Technology, Nara, 630-0192 (Japan)

    2016-07-05

    Thermal reaction between thallium oxide (Tl{sub 2}O{sub 3}) and zinc oxide (ZnO), tin oxide (SnO{sub 2}) or indium oxide (In{sub 2}O{sub 3}) annealed at 600 °C for 18 h in the air atmosphere was investigated. From XRD results of 600 °C annealed samples, Tl{sub 2}O{sub 3} had the biggest reactivity compared with ZnO. The EDX results suggest the mechanism in which the thallium atoms scattered and attached uniformly only on ZnO particles. We also analyzed XPS data to compare O 1s bond and Tl 4f bond of as-mixed samples with that of annealed samples, and found that Zn and Sn can contribute in improving Tl and O bonding stability. However, the affinity of In for Tl is weaker than that of Zn or Sn. Finally, we prepared the samples mixed with ZnO, SnO{sub 2}, and Tl{sub 2}O{sub 3} powder and the samples mixed with Zn{sub 2}SnO{sub 4} and Tl{sub 2}O{sub 3} powder annealed at 600 °C for 18 h. Results show that Zn{sub 2}SnO{sub 4} has the same or more reactivity than SnO{sub 2} and ZnO mixed particle despite of the more stable and sufficient dispersion of Zn and Sn atoms. More stable TlSnZnO can be fabricated from Zn{sub 2}SnO{sub 4} + Tl{sub 2}O{sub 3} powder by suitable thermal processes. It is expected that TlSnZnO sputtering target can be fabricated by suitable calcination. - Highlights: • Thermal reaction of Tl{sub 2}O{sub 3} and ZnO, SnO or In{sub 2}O{sub 3} were investigate. • It is found that Tl{sub 2}O{sub 3} is reactive with ZnO rather than SnO or In{sub 2}O{sub 3}. • Two-step annealing process is promising route for forming TlSnZnO tablet.

  19. Investigation of nanoporous platinum thin films fabricated by reactive sputtering: Application as micro-SOFC electrode

    Science.gov (United States)

    Jung, WooChul; Kim, Jae Jin; Tuller, Harry L.

    2015-02-01

    Highly porous Pt thin films, with nano-scale porosity, were fabricated by reactive sputtering. The strategy involved deposition of thin film PtOx at room temperature, followed by the subsequent decomposition of the oxide by rapid heat treatment. The resulting films exhibited percolating Pt networks infiltrated with interconnected nanosized pores, critical for superior solid oxide fuel cell cathode performance. This approach is particularly attractive for micro-fabricated solid oxide fuel cells, since it enables fabrication of the entire cell stack (anode/electrolyte/cathode) within the sputtering chamber, without breaking vacuum. In this work, the morphological, crystallographic and chemical properties of the porous electrode were systematically varied by control of deposition conditions. Oxygen reduction reaction kinetics were investigated by means of electrochemical impedance spectroscopy, demonstrating the critical role of nano-pores in achieving satisfactory micro-SOFC cathode performance.

  20. Fabrication of organic-inorganic perovskite thin films for planar solar cells via pulsed laser deposition

    Energy Technology Data Exchange (ETDEWEB)

    Liang, Yangang; Zhang, Xiaohang; Gong, Yunhui; Shin, Jongmoon; Wachsman, Eric D.; Takeuchi, Ichiro, E-mail: takeuchi@umd.edu [Department of Materials Science and Engineering, University of Maryland, College Park, Maryland 20740 (United States); Yao, Yangyi; Hsu, Wei-Lun; Dagenais, Mario [Department of Electrical and Computer Engineering, University of Maryland, College Park, Maryland 20740 (United States)

    2016-01-15

    We report on fabrication of organic-inorganic perovskite thin films using a hybrid method consisting of pulsed laser deposition (PLD) of lead iodide and spin-coating of methylammonium iodide. Smooth and highly crystalline CH{sub 3}NH{sub 3}PbI{sub 3} thin films have been fabricated on silicon and glass coated substrates with fluorine doped tin oxide using this PLD-based hybrid method. Planar perovskite solar cells with an inverted structure have been successfully fabricated using the perovskite films. Because of its versatility, the PLD-based hybrid fabrication method not only provides an easy and precise control of the thickness of the perovskite thin films, but also offers a straightforward platform for studying the potential feasibility in using other metal halides and organic salts for formation of the organic-inorganic perovskite structure.

  1. Fabrication of organic-inorganic perovskite thin films for planar solar cells via pulsed laser deposition

    Directory of Open Access Journals (Sweden)

    Yangang Liang

    2016-01-01

    Full Text Available We report on fabrication of organic-inorganic perovskite thin films using a hybrid method consisting of pulsed laser deposition (PLD of lead iodide and spin-coating of methylammonium iodide. Smooth and highly crystalline CH3NH3PbI3 thin films have been fabricated on silicon and glass coated substrates with fluorine doped tin oxide using this PLD-based hybrid method. Planar perovskite solar cells with an inverted structure have been successfully fabricated using the perovskite films. Because of its versatility, the PLD-based hybrid fabrication method not only provides an easy and precise control of the thickness of the perovskite thin films, but also offers a straightforward platform for studying the potential feasibility in using other metal halides and organic salts for formation of the organic-inorganic perovskite structure.

  2. Photoconductivity of reduced graphene oxide and graphene oxide composite films

    International Nuclear Information System (INIS)

    Liang, Haifeng; Ren, Wen; Su, Junhong; Cai, Changlong

    2012-01-01

    A photoconductive device was fabricated by patterning magnetron sputtered Pt/Ti electrode and Reduced Graphene Oxide (RGO)/Graphene Oxide (GO) composite films with a sensitive area of 10 × 20 mm 2 . The surface morphology of as-deposited GO films was observed by scanning electronic microscopy, optical microscopy and atomic force microscopy, respectively. The absorption properties and chemical structure of RGO/GO composite films were obtained using a spectrophotometer and an X-ray photoelectron spectroscopy. The photoconductive properties of the system were characterized under white light irradiation with varied output power and biased voltage. The results show that the resistance decreased from 210 kΩ to 11.5 kΩ as the irradiation power increased from 0.0008 mW to 625 mW. The calculated responsiveness of white light reached 0.53 × 10 −3 A/W. Furthermore, the device presents a high photo-conductivity response and displays a photovoltaic response with an open circuit voltage from 0.017 V to 0.014 V with irradiation power. The sources of charge are attributed to efficient excitation dissociation at the interface of the RGO/GO composite film, coupled with cross-surface charge percolation.

  3. Fabrication and characterization of vacuum deposited fluorescein thin films

    Energy Technology Data Exchange (ETDEWEB)

    Jalkanen, Pasi, E-mail: pasi.jalkanen@gmail.co [University of Jyvaeskylae, Department of Physics, Nanoscience center (NSC), P.O. Box 35, FI-40014 Jyvaeskylae (Finland); Kulju, Sampo, E-mail: sampo.j.kulju@jyu.f [University of Jyvaeskylae, Department of Physics, Nanoscience center (NSC), P.O. Box 35, FI-40014 Jyvaeskylae (Finland); Arutyunov, Konstantin, E-mail: konstantin.arutyunov@jyu.f [University of Jyvaeskylae, Department of Physics, Nanoscience center (NSC), P.O. Box 35, FI-40014 Jyvaeskylae (Finland); Antila, Liisa, E-mail: liisa.j.antila@jyu.f [University of Jyvaeskylae, Department of Chemistry, Nanoscience center (NSC) P.O. Box 35, FI-40014 Jyvaeskylae (Finland); Myllyperkioe, Pasi, E-mail: pasi.myllyperkio@jyu.f [University of Jyvaeskylae, Department of Chemistry, Nanoscience center (NSC) P.O. Box 35, FI-40014 Jyvaeskylae (Finland); Ihalainen, Teemu, E-mail: teemu.o.ihalainen@jyu.f [University of Jyvaeskylae, Department of Biology, Nanoscience center (NSC), P.O. Box 35, FI-40014 Jyvaeskylae (Finland); Kaeaeriaeinen, Tommi, E-mail: tommi.kaariainen@lut.f [Lappeenranta University of Technology, ASTRal, P.O. Box 181, FI-50101 Mikkeli (Finland); Kaeaeriaeinen, Marja-Leena, E-mail: marja-leena.kaariainen@lut.f [Lappeenranta University of Technology, ASTRal, P.O. Box 181, FI-50101 Mikkeli (Finland); Korppi-Tommola, Jouko, E-mail: jouko.korppi-tommola@jyu.f [University of Jyvaeskylae, Department of Biology, Nanoscience center (NSC), P.O. Box 35, FI-40014 Jyvaeskylae (Finland)

    2011-03-31

    Simple vacuum evaporation technique for deposition of dyes on various solid surfaces has been developed. The method is compatible with conventional solvent-free nanofabrication processing enabling fabrication of nanoscale optoelectronic devices. Thin films of fluorescein were deposited on glass, fluorine-tin-oxide (FTO) coated glass with and without atomically layer deposited (ALD) nanocrystalline 20 nm thick anatase TiO{sub 2} coating. Surface topology, absorption and emission spectra of the films depend on their thickness and the material of supporting substrate. On a smooth glass surface the dye initially forms islands before merging into a uniform layer after 5 to 10 monolayers. On FTO covered glass the absorption spectra are similar to fluorescein solution in ethanol. Absorption spectra on ALD-TiO{sub 2} is red shifted compared to the film deposited on bare FTO. The corresponding emission spectra at {lambda} = 458 nm excitation show various thickness and substrate dependent features, while the emission of films deposited on TiO{sub 2} is quenched due to the effective electron transfer to the semiconductor conduction band.

  4. Unidirectional oxide hetero-interface thin-film diode

    International Nuclear Information System (INIS)

    Park, Youngmin; Lee, Eungkyu; Lee, Jinwon; Lim, Keon-Hee; Kim, Youn Sang

    2015-01-01

    The unidirectional thin-film diode based on oxide hetero-interface, which is well compatible with conventional thin-film fabrication process, is presented. With the metal anode/electron-transporting oxide (ETO)/electron-injecting oxide (EIO)/metal cathode structure, it exhibits that electrical currents ohmically flow at the ETO/EIO hetero-interfaces for only positive voltages showing current density (J)-rectifying ratio of ∼10 5 at 5 V. The electrical properties (ex, current levels, and working device yields) of the thin-film diode (TFD) are systematically controlled by changing oxide layer thickness. Moreover, we show that the oxide hetero-interface TFD clearly rectifies an AC input within frequency (f) range of 10 2  Hz < f < 10 6  Hz, providing a high feasibility for practical applications

  5. Unidirectional oxide hetero-interface thin-film diode

    Energy Technology Data Exchange (ETDEWEB)

    Park, Youngmin; Lee, Eungkyu; Lee, Jinwon; Lim, Keon-Hee [Program in Nano Science and Technology, Graduate School of Convergence Science and Technology, Seoul National University, Seoul 151-742 (Korea, Republic of); Kim, Youn Sang, E-mail: younskim@snu.ac.kr [Program in Nano Science and Technology, Graduate School of Convergence Science and Technology, Seoul National University, Seoul 151-742 (Korea, Republic of); Advanced Institute of Convergence Technology, Gyeonggi-do 443-270 (Korea, Republic of)

    2015-10-05

    The unidirectional thin-film diode based on oxide hetero-interface, which is well compatible with conventional thin-film fabrication process, is presented. With the metal anode/electron-transporting oxide (ETO)/electron-injecting oxide (EIO)/metal cathode structure, it exhibits that electrical currents ohmically flow at the ETO/EIO hetero-interfaces for only positive voltages showing current density (J)-rectifying ratio of ∼10{sup 5} at 5 V. The electrical properties (ex, current levels, and working device yields) of the thin-film diode (TFD) are systematically controlled by changing oxide layer thickness. Moreover, we show that the oxide hetero-interface TFD clearly rectifies an AC input within frequency (f) range of 10{sup 2} Hz < f < 10{sup 6} Hz, providing a high feasibility for practical applications.

  6. Plasma-enhanced chemical vapor deposition for YBCO film fabrication of superconducting fault-current limiter

    Energy Technology Data Exchange (ETDEWEB)

    Jun, Byung Hyuk; Kim, Chan Joong

    2006-05-15

    Since the high-temperature superconductor of oxide type was founded, many researches and efforts have been performed for finding its application field. The YBCO superconducting film fabricated on economic metal substrate with uniform critical current density is considered as superconducting fault-current limiter (SFCL). There are physical and chemical processes to fabricate superconductor film, and it is understood that the chemical methods are more economic to deposit large area. Among them, chemical vapor deposition (CVD) is a promising deposition method in obtaining film uniformity. To solve the problems due to the high deposition temperature of thermal CVD, plasma-enhanced chemical vapor deposition (PECVD) is suggested. This report describes the principle and fabrication trend of SFCL, example of YBCO film deposition by PECVD method, and principle of plasma deposition.

  7. Subtractive fabrication of ferroelectric thin films with precisely controlled thickness

    Science.gov (United States)

    Ievlev, Anton V.; Chyasnavichyus, Marius; Leonard, Donovan N.; Agar, Joshua C.; Velarde, Gabriel A.; Martin, Lane W.; Kalinin, Sergei V.; Maksymovych, Petro; Ovchinnikova, Olga S.

    2018-04-01

    The ability to control thin-film growth has led to advances in our understanding of fundamental physics as well as to the emergence of novel technologies. However, common thin-film growth techniques introduce a number of limitations related to the concentration of defects on film interfaces and surfaces that limit the scope of systems that can be produced and studied experimentally. Here, we developed an ion-beam based subtractive fabrication process that enables creation and modification of thin films with pre-defined thicknesses. To accomplish this we transformed a multimodal imaging platform that combines time-of-flight secondary ion mass spectrometry with atomic force microscopy to a unique fabrication tool that allows for precise sputtering of the nanometer-thin layers of material. To demonstrate fabrication of thin-films with in situ feedback and control on film thickness and functionality we systematically studied thickness dependence of ferroelectric switching of lead-zirconate-titanate, within a single epitaxial film. Our results demonstrate that through a subtractive film fabrication process we can control the piezoelectric response as a function of film thickness as well as improve on the overall piezoelectric response versus an untreated film.

  8. Fabrication of flexible polymer dispersed liquid crystal films using conducting polymer thin films as the driving electrodes

    International Nuclear Information System (INIS)

    Kim, Yang-Bae; Park, Sucheol; Hong, Jin-Who

    2009-01-01

    Conducting polymers exhibit good mechanical and interfacial compatibility with plastic substrates. We prepared an optimized coating formulation based on poly(3,4-ethylenedioxythiophene) (PEDOT) and 3-(trimethoxysilyl)propyl acrylate and fabricated a transparent electrode on poly(ethylene terephthalate) (PET) substrate. The surface resistances and transmittance of the prepared thin films were 500-600 Ω/□ and 87% at 500 nm, respectively. To evaluate the performance of the conducting polymer electrode, we fabricated a five-layer flexible polymer-dispersed liquid crystal (PDLC) device as a PET-PEDOT-PDLC-PEDOT-PET flexible film. The prepared PDLC device exhibited a low driving voltage (15 VAC), high contrast ratio (60:1), and high transmittance in the ON state (60%), characteristics that are comparable with those of conventional PDLC film based on indium tin oxide electrodes. The fabrication of conducting polymer thin films as the driving electrodes in this study showed that such films can be used as a substitute for an indium tin oxide electrode, which further enhances the flexibility of PDLC film

  9. Chitosan/graphene oxide biocomposite film from pencil rod

    Science.gov (United States)

    Gea, S.; Sari, J. N.; Bulan, R.; Piliang, A.; Amaturrahim, S. A.; Hutapea, Y. A.

    2018-03-01

    Graphene Oxide (GO) has been succesfully synthesized using Hummber method from graphite powder of pencil rod. The excellent solubility of graphene oxide (GO)in water imparts its feasibilty as new filler for reinforcement hydrophilic biopolymers. In this research, the biocomposite film was fabricated from chitosan/graphene oxide. The characteristics of graphene oxide were investigated using Fourier Transform Infrared (FT-IR) and X-ray Diffraction (XRD). The results of the XRD showed graphene structur in 2θ, appeared at 9.0715°with interlayer spacing was about 9.74063Å. Preparation films with several variations of chitosan/graphene oxide was done by casting method and characterized by mechanical and morphological analysis. The mechanical properties of the tensile test in the film show that the film CS/GO (85: 15)% has the optimum Young’s modulus size of 2.9 GPa compared to other variations of CS / GO film. Morphological analysis film CS/GO (85:15)% by Scanning Electron Microscopy (SEM), the obtained biocomposites film showed fine dispersion of GO in the CS matrix and could mix each other homogeneously.

  10. A Novel Method of Fabricating Flexible Transparent Conductive Large Area Graphene Film

    International Nuclear Information System (INIS)

    Fan Tian-Ju; Yuan Chun-Qiu; Tang Wei; Tong Song-Zhao; Huang Wei; Min Yong-Gang; Liu Yi-Dong; Epstein, Arthur J.

    2015-01-01

    We fabricate flexible conductive and transparent graphene films on position-emission-tomography substrates and prepare large area graphene films by graphite oxide sheets with the new technical process. The multi-layer graphene oxide sheets can be chemically reduced by HNO 3 and HI to form a highly conductive graphene film on a substrate at lower temperature. The reduced graphene oxide sheets show a high conductivity sheet with resistance of 476 Ω/sq and transmittance of 76% at 550 nm (6 layers). The technique used to produce the transparent conductive graphene thin film is facile, inexpensive, and can be tunable for a large area production applied for electronics or touch screens. (paper)

  11. Hardware Modifications to the US Army Research Laboratory’s Metalorganic Chemical Vapor Deposition (MOCVD) System for Optimization of Complex Oxide Thin Film Fabrication

    Science.gov (United States)

    2015-04-01

    the total absorbance, or the fraction of radiation absorbed at the measured wavelength; is the calculated molar extinction coefficient for the...of PZT thin films by liquid delivery MOCVD. Integrated Ferroelectrics. 2002;46:125–131. 14. Hiskes R, Dicarolis SA, Jacowitz RD, Lu Z, Feigelson RS

  12. All-Aluminum Thin Film Transistor Fabrication at Room Temperature

    Directory of Open Access Journals (Sweden)

    Rihui Yao

    2017-02-01

    Full Text Available Bottom-gate all-aluminum thin film transistors with multi conductor/insulator nanometer heterojunction were investigated in this article. Alumina (Al2O3 insulating layer was deposited on the surface of aluminum doping zinc oxide (AZO conductive layer, as one AZO/Al2O3 heterojunction unit. The measurements of transmittance electronic microscopy (TEM and X-ray reflectivity (XRR revealed the smooth interfaces between ~2.2-nm-thick Al2O3 layers and ~2.7-nm-thick AZO layers. The devices were entirely composited by aluminiferous materials, that is, their gate and source/drain electrodes were respectively fabricated by aluminum neodymium alloy (Al:Nd and pure Al, with Al2O3/AZO multilayered channel and AlOx:Nd gate dielectric layer. As a result, the all-aluminum TFT with two Al2O3/AZO heterojunction units exhibited a mobility of 2.47 cm2/V·s and an Ion/Ioff ratio of 106. All processes were carried out at room temperature, which created new possibilities for green displays industry by allowing for the devices fabricated on plastic-like substrates or papers, mainly using no toxic/rare materials.

  13. Ion beam-based characterization of multicomponent oxide thin films and thin film layered structures

    International Nuclear Information System (INIS)

    Krauss, A.R.; Rangaswamy, M.; Lin, Yuping; Gruen, D.M.; Schultz, J.A.; Schmidt, H.K.; Chang, R.P.H.

    1992-01-01

    Fabrication of thin film layered structures of multi-component materials such as high temperature superconductors, ferroelectric and electro-optic materials, and alloy semiconductors, and the development of hybrid materials requires understanding of film growth and interface properties. For High Temperature Superconductors, the superconducting coherence length is extremely short (5--15 Angstrom), and fabrication of reliable devices will require control of film properties at extremely sharp interfaces; it will be necessary to verify the integrity of thin layers and layered structure devices over thicknesses comparable to the atomic layer spacing. Analytical techniques which probe the first 1--2 atomic layers are therefore necessary for in-situ characterization of relevant thin film growth processes. However, most surface-analytical techniques are sensitive to a region within 10--40 Angstrom of the surface and are physically incompatible with thin film deposition and are typically restricted to ultra high vacuum conditions. A review of ion beam-based analytical methods for the characterization of thin film and multi-layered thin film structures incorporating layers of multicomponent oxides is presented. Particular attention will be paid to the use of time-of-flight techniques based on the use of 1- 15 key ion beams which show potential for use as nondestructive, real-time, in-situ surface diagnostics for the growth of multicomponent metal and metal oxide thin films

  14. Fabrication of textured SnO2 transparent conductive films using self-assembled Sn nanospheres

    Science.gov (United States)

    Fukumoto, Michitaka; Nakao, Shoichiro; Hirose, Yasushi; Hasegawa, Tetsuya

    2018-06-01

    We present a novel method to fabricate textured surfaces on transparent conductive SnO2 films by processing substrates through a bottom-up technique with potential for industrially scalable production. The substrate processing consists of three steps: deposition of precursor Sn films on glass substrates, formation of a self-assembled Sn nanosphere layer with reductive annealing, and conversion of Sn to SnO2 by oxidative annealing. Ta-doped SnO2 films conformally deposited on the self-assembled nanospherical SnO2 templates exhibited attractive optical and electrical properties, namely, enhanced haze values and low sheet resistances, for applications as transparent electrodes in photovoltaics.

  15. Fabrication of Pb (Zr, Ti) O3 Thin Film for Non-Volatile Memory Device Application

    International Nuclear Information System (INIS)

    Mar Lar Win

    2011-12-01

    Ferroelectric lead zirconate titanate powder was composed of mainly the oxides of titanium, zirconium and lead. PZT powder was firstly prepared by thermal synthesis at different Zr/Ti ratios with various sintering temperatures. PZT thin film was fabricated on SiO2/Si substrate by using thermal evaporation method. Physical and elemental analysis were carried out by using SEM, EDX and XRD The ferroelectric properties and the switching behaviour of the PZT thin films were investigated. The ferroelectric properties and switching properties of the PZT thin film (near morphotropic phase boundary sintered at 800 C) could function as a nonvolatile memory.

  16. Lithium insertion in sputtered vanadium oxide film

    DEFF Research Database (Denmark)

    West, K.; Zachau-Christiansen, B.; Skaarup, S.V.

    1992-01-01

    were oxygen deficient compared to V2O5. Films prepared in pure argon were reduced to V(4) or lower. The vanadium oxide films were tested in solid-state lithium cells. Films sputtered in oxygen showed electrochemical properties similar to crystalline V2O5. The main differences are a decreased capacity...

  17. Fabrication of mesoporous cerium dioxide films by cathodic electrodeposition.

    Science.gov (United States)

    Kim, Young-Soo; Lee, Jin-Kyu; Ahn, Jae-Hoon; Park, Eun-Kyung; Kim, Gil-Pyo; Baeck, Sung-Hyeon

    2007-11-01

    Mesoporous cerium dioxide (Ceria, CeO2) thin films have been successfully electrodeposited onto ITO-coated glass substrates from an aqueous solution of cerium nitrate using CTAB (Cetyltrimethylammonium Bromide) as a templating agent. The synthesized films underwent detailed characterizations. The crystallinity of synthesized CeO2 film was confirmed by XRD analysis and HR-TEM analysis, and surface morphology was investigated by SEM analysis. The presence of mesoporosity in fabricated films was confirmed by TEM and small angle X-ray analysis. As-synthesized film was observed from XRD analysis and HR-TEM image to have well-crystallized structure of cubic phase CeO2. Transmission electron microscopy and small angle X-ray analysis revealed the presence of uniform mesoporosity with a well-ordered lamellar phase in the CeO2 films electrodeposited with CTAB templating.

  18. Fabrication of semi-transparent superoleophobic thin film from fabrics and nanoparticle-based hierarchical structure

    Directory of Open Access Journals (Sweden)

    Nishizawa S.

    2013-08-01

    Full Text Available Superoleophobic thin films have many potential applications including fluid transfer, fluid power systems, stain resistant and antifouling materials, and microfluidics among others. Transparency is also desired with superhydrophobicity for their numerous applications; however transparency and oleophobicity are almost incompatible relationship with each other in the point of surface structure. Because oleophobicity required rougher structure at nano-micro scale than hydrophobicity, and these rough structure brings light scattering. So far, there is very few report of the compatible of transparency and superoleophobicity. In this report, we proposed the see-through type fabrics using the nanoparticle-based hierarchical structure thin film for improving both of oleophobicity and transparency. The vacant space between fibrils of fabrics has two important roles: the one is to through the light, another one is to introduce air layer to realize Cassie state of liquid droplet on thin film. To realize the low surface energy and nanoscale rough structure surface on fibrils, we used the spray method with perfluoroalkyl methacrylic copolymer (PMC, silica nano particles and volatile solvent. From the SEM image, the hierarchical structures of nanoparticle were formed uniformly on the fabrics. The transparency of thin film obtained was approximately 61% and the change of transparency between pre-coated fabrics and coated was 11%. From investigation of the surface wettability, the contact angles of oils (rapeseed oil and hexadecane and water droplet on the fabricated film were over 150 degree.

  19. Solid-state pH ultramicrosensor based on a tungstic oxide film fabricated on a tungsten nanoelectrode and its application to the study of endothelial cells

    International Nuclear Information System (INIS)

    Yamamoto, Katsunobu; Shi Guoyue; Zhou Tianshu; Xu Fan; Zhu Min; Liu Min; Kato, Takeshi; Jin Jiye; Jin Litong

    2003-01-01

    In this paper, preparation of a novel pH ultramicrosensor and its physiological application has been discussed. A tungsten nanoelectrode was produced by an etching method in 0.1 mol/l NaOH solution at the potential of +0.4 V (versus Ag/AgCl reference electrode) for about 100 s and the diameters ranged from 500 to 800 nm. The pH ultramicrosensor was fabricated by producing WO 3 at W nanoelectrode surface by electrooxidation in 2.0 mol/l H 2 SO 4 solution between 1.0 and 2.0 V. At last, Nafion was coated on the surface of WO 3 to protect the pH ultramicrosensor. The W/WO 3 pH ultramicrosensor exhibited a good pH linear region from 2.0 to 12.0 with a super-Nernstian slope of -53.5 ± 0.5 mV/pH unit. Response times ranged from 3 s at about pH 6.0-7.0 up to 15 s at high pH. An interference of various ions to the pH measurement was also studied in this paper. We also studied the lifetime, stability and reproducibility of the W/WO 3 pH ultramicrosensor. In order to testing the performance of W/WO 3 ultramicrosensor, we applied it to measure the extracellular pH values and a pH variation was also given about the normal, damaged and recovery endothelial cells

  20. Fabrication of graphene/polyaniline composite multilayer films by electrostatic layer-by-layer assembly

    International Nuclear Information System (INIS)

    Cong, Jiaojiao; Chen, Yuze; Luo, Jing; Liu, Xiaoya

    2014-01-01

    A novel graphene/polyaniline composite multilayer film was fabricated by electrostatic interactions induced layer-by-layer self-assembly technique, using water dispersible and negatively charged chemically converted graphene (CCG) and positively charged polyaniline (PANI) as building blocks. CCG was achieved through partly reduced graphene oxide, which remained carboxyl group on its surface. The remaining carboxyl groups not only retain the dispersibility of CCG, but also allow the growth of the multilayer films via electrostatic interactions between graphene and PANI. The structure and morphology of the obtained CCG/PANI multilayer film are characterized by attenuated total reflectance Fourier transform infrared (ATR-FTIR) spectroscopy, Ultraviolet–visible absorption spectrum (UV–vis), scanning electron microscopy (SEM), Raman spectroscopy and X-Ray Diffraction (XRD). The electrochemical properties of the resulting film are studied using cyclic voltammetry (CV), which showed that the resulting CCG/PANI multilayer film kept electroactivity in neutral solution and showed outstanding cyclic stability up to 100 cycles. Furthermore, the composite film exhibited good electrocatalytic ability toward ascorbic acid (AA) with a linear response from 1×10 −4 to 1.2×10 −3 M with the detect limit of 5×10 −6 M. This study provides a facile and effective strategy to fabricate graphene/PANI nanocomposite film with good electrochemical property, which may find potential applications in electronic devices such as electrochemical sensor. - Graphical abstract: A novel graphene/polyaniline (CCG/PANI) film was prepared by layer-by-layer assembly. - Highlights: • A novel graphene/polyaniline (CCG/PANI) film was prepared by layer-by-layer assembly. • The water dispersible and negatively charged graphene (CCG) was used as building block. • CCG was achieved through partly reduced graphene oxide with carboxyl group on its surface. • CCG/PANI film kept electroactivity in

  1. Fabrication of graphene/polyaniline composite multilayer films by electrostatic layer-by-layer assembly

    Energy Technology Data Exchange (ETDEWEB)

    Cong, Jiaojiao; Chen, Yuze; Luo, Jing, E-mail: jingluo19801007@126.com; Liu, Xiaoya

    2014-10-15

    A novel graphene/polyaniline composite multilayer film was fabricated by electrostatic interactions induced layer-by-layer self-assembly technique, using water dispersible and negatively charged chemically converted graphene (CCG) and positively charged polyaniline (PANI) as building blocks. CCG was achieved through partly reduced graphene oxide, which remained carboxyl group on its surface. The remaining carboxyl groups not only retain the dispersibility of CCG, but also allow the growth of the multilayer films via electrostatic interactions between graphene and PANI. The structure and morphology of the obtained CCG/PANI multilayer film are characterized by attenuated total reflectance Fourier transform infrared (ATR-FTIR) spectroscopy, Ultraviolet–visible absorption spectrum (UV–vis), scanning electron microscopy (SEM), Raman spectroscopy and X-Ray Diffraction (XRD). The electrochemical properties of the resulting film are studied using cyclic voltammetry (CV), which showed that the resulting CCG/PANI multilayer film kept electroactivity in neutral solution and showed outstanding cyclic stability up to 100 cycles. Furthermore, the composite film exhibited good electrocatalytic ability toward ascorbic acid (AA) with a linear response from 1×10{sup −4} to 1.2×10{sup −3} M with the detect limit of 5×10{sup −6} M. This study provides a facile and effective strategy to fabricate graphene/PANI nanocomposite film with good electrochemical property, which may find potential applications in electronic devices such as electrochemical sensor. - Graphical abstract: A novel graphene/polyaniline (CCG/PANI) film was prepared by layer-by-layer assembly. - Highlights: • A novel graphene/polyaniline (CCG/PANI) film was prepared by layer-by-layer assembly. • The water dispersible and negatively charged graphene (CCG) was used as building block. • CCG was achieved through partly reduced graphene oxide with carboxyl group on its surface. • CCG/PANI film kept

  2. Nanoporous zinc oxide films prepared by magnetron sputtering

    International Nuclear Information System (INIS)

    Ghimpu, L.; Lupan, O.; Popescu, L.; Tiginyanu, I.M.

    2011-01-01

    In this paper we demonstrate an inexpensive approach for the fabrication of nanoporous zinc oxide films by using magnetron sputtering. Study of the structural properties proves the crystallographic perfection of porous nanostructures and the possibility of its controlling by adjusting the technological parameters in the growth process. The XRD pattern of nanoporous ZnO films exhibits high intensity of the peaks relative to the background signal which is indicative of the ZnO hexagonal phase and a good crystallinity of the samples grown by magnetron sputtering.

  3. Transparent optically vanadium dioxide thermochromic smart film fabricated via electrospinning technique

    Science.gov (United States)

    Lu, Yuan; Xiao, Xiudi; Cao, Ziyi; Zhan, Yongjun; Cheng, Haoliang; Xu, Gang

    2017-12-01

    The monoclinic phase vanadium dioxide VO2 (M) based transparent thermochromic smart films were firstly fabricated through heat treatment of opaque VO2-based composite nanofibrous mats, which were deposited on the glass substrate via electrospinning technique. Noteworthily, the anti-oxidation property of VO2 smart film was improved due to inner distribution of VO2 in the polymethylmethacrylate (PMMA) nanofibers, and the composite mats having water contact angle of 165° determined itself good superhydrophobic property. Besides, PMMA nanofibrous mats with different polymer concentrations demonstrated changeable morphology and fiber diameter. The VO2 nanoparticles having diameter of 30-50 nm gathered and exhibited ellipse-like or belt-like structure. Additionally, the solar modulation ability of PMMA-VO2 composite smart film was 6.88% according to UV-Vis-NIR spectra. The research offered a new notion for fabricating transparent VO2 thermochromic material.

  4. Electrochemical fabrication of CdS/Co nanowire arrays in porous aluminum oxide templates

    CERN Document Server

    Yoon, C H

    2002-01-01

    A procedure for preparing semiconductor/metal nanowire arrays is described, based on a template method which entails electrochemical deposition into nanometer-wide parallel pores of anodic aluminum oxide films on aluminum. Aligned CdS/Co heterostructured nanowires have been prepared by ac electrodeposition in the anodic aluminum oxide templates. By varying the preparation conditions, a variety of CdS/Co nanowire arrays were fabricated, whose dimensional properties could be adjusted.

  5. Fabrication of PDMS/SWCNT thin films as saturable absorbers

    International Nuclear Information System (INIS)

    Hernandez-Romano, I; Sanchez-Mondragon, J J; Davila-Rodriguez, J; Delfyett, P J; May-Arrioja, D A

    2011-01-01

    We present a novel technique to fabricate a saturable absorber thin film based on Polydimethylsiloxane doped with Single Wall Carbon Nanotubes. Using this film a passive mode-locked fiber laser in a standard ring cavity configuration was built by inserting the film between two angled connectors. Self-starting passively mode-locked laser operation was easily observed. The generated pulses have a width of 1.26 ps at a repetition rate of 22.7 MHz with an average power of 4.89 mW.

  6. Fabrication of graphene/polyaniline composite multilayer films by electrostatic layer-by-layer assembly

    Science.gov (United States)

    Cong, Jiaojiao; Chen, Yuze; Luo, Jing; Liu, Xiaoya

    2014-10-01

    A novel graphene/polyaniline composite multilayer film was fabricated by electrostatic interactions induced layer-by-layer self-assembly technique, using water dispersible and negatively charged chemically converted graphene (CCG) and positively charged polyaniline (PANI) as building blocks. CCG was achieved through partly reduced graphene oxide, which remained carboxyl group on its surface. The remaining carboxyl groups not only retain the dispersibility of CCG, but also allow the growth of the multilayer films via electrostatic interactions between graphene and PANI. The structure and morphology of the obtained CCG/PANI multilayer film are characterized by attenuated total reflectance Fourier transform infrared (ATR-FTIR) spectroscopy, Ultraviolet-visible absorption spectrum (UV-vis), scanning electron microscopy (SEM), Raman spectroscopy and X-Ray Diffraction (XRD). The electrochemical properties of the resulting film are studied using cyclic voltammetry (CV), which showed that the resulting CCG/PANI multilayer film kept electroactivity in neutral solution and showed outstanding cyclic stability up to 100 cycles. Furthermore, the composite film exhibited good electrocatalytic ability toward ascorbic acid (AA) with a linear response from 1×10-4 to 1.2×10-3 M with the detect limit of 5×10-6 M. This study provides a facile and effective strategy to fabricate graphene/PANI nanocomposite film with good electrochemical property, which may find potential applications in electronic devices such as electrochemical sensor.

  7. New route to the fabrication of nanocrystalline diamond films

    International Nuclear Information System (INIS)

    Varshney, Deepak; Morell, Gerardo; Palomino, Javier; Resto, Oscar; Gil, Jennifer; Weiner, Brad R.

    2014-01-01

    Nanocrystalline diamond (NCD) thin films offer applications in various fields, but the existing synthetic approaches are cumbersome and destructive. A major breakthrough has been achieved by our group in the direction of a non-destructive, scalable, and economic process of NCD thin-film fabrication. Here, we report a cheap precursor for the growth of nanocrystalline diamond in the form of paraffin wax. We show that NCD thin films can be fabricated on a copper support by using simple, commonplace paraffin wax under reaction conditions of Hot Filament Chemical Vapor Deposition (HFCVD). Surprisingly, even the presence of any catalyst or seeding that has been conventionally used in the state-of-the-art is not required. The structure of the obtained films was analyzed by scanning electron microscopy and transmission electron microscopy. Raman spectroscopy and electron energy-loss spectroscopy recorded at the carbon K-edge region confirm the presence of nanocrystalline diamond. The process is a significant step towards cost-effective and non-cumbersome fabrication of nanocrystalline diamond thin films for commercial production

  8. Optical and structural properties of porous zinc oxide fabricated via electrochemical etching method

    International Nuclear Information System (INIS)

    Ching, C.G.; Lee, S.C.; Ooi, P.K.; Ng, S.S.; Hassan, Z.; Hassan, H. Abu; Abdullah, M.J.

    2013-01-01

    Highlights: • Hillock like porous structure zinc oxide was obtained via electrochemical etching. • Anisotropic dominance etching process by KOH etchant. • Reststrahlen features are sensitive to multilayer porous structure. • Determination of porosity from IR reflectance spectrum. -- Abstract: We investigated the optical and structural properties of porous zinc oxide (ZnO) thin film fabricated by ultraviolet light-assisted electrochemical etching. This fabrication process used 10 wt% potassium hydroxide solution as an electrolyte. Hillock-like porous ZnO films were successfully fabricated according to the field emission scanning electron microscopy results. The cross-sectional study of the sample indicated that anisotropic-dominated etching process occurred. However, the atomic force microscopic results showed an increase in surface roughness of the sample after electrochemical etching. A resonance hump induced by the porous structure was observed in the infrared reflectance spectrum. Using theoretical modeling technique, ZnO porosification was verified, and the porosity of the sample was determined

  9. Carbon contaminant in the ion processing of aluminum oxide film

    International Nuclear Information System (INIS)

    Chaug, Y.; Roy, N.

    1989-01-01

    Ion processing can induce contamination on the bombarded surface. However, this process is essential for the microelectronics device fabrication. Auger electron spectroscopy has been used to study the simultaneous deposition of carbon impurity during ion bombardment of magnetron rf-sputtering deposited aluminum oxide film. Ion bombardment on aluminum oxide results in a preferential removal of surface oxygen and a formation of a metastable state of aluminum suboxide. Cosputtered implanted carbon contaminant appears to have formed a new state of stoichiometry on the surface of the ion bombarded aluminum oxide and existed as an aluminum carbide. This phase has formed due to the interaction of the implanted carbon and the aluminum suboxide. The Ar + ion sputter etching rate is reduced for the carbon contaminated oxide. The electrical resistance of the aluminum oxide between two gold strips has been measured. It is found that the electrical resistance is also reduced due to the formation of the new stoichiometry on the surface

  10. Transparent conductive Ga-doped ZnO films fabricated by MOCVD

    Energy Technology Data Exchange (ETDEWEB)

    Behrends, Arne; Wagner, Alexander; Al-Suleiman, Mohamed Aid Mansur; Waag, Andreas; Bakin, Andrey [Institute of Semiconductor Technology, University of Technology Braunschweig, Hans-Sommer-Str. 66, 38106 Braunschweig (Germany); Lugauer, Hans-Juergen; Strassburg, Martin; Walter, Robert; Weimar, Andreas [OSRAM Opto Semiconductors GmbH, Leibnizstr. 4, 93055 Regensburg (Germany)

    2012-04-15

    Transparent conductive oxides (TCOs) are used for a variety of different applications, e.g., in solar cells and light emitting diodes (LEDs). Mostly, sputtering is used, which often results in a degradation of the underlying semiconductor material. In this work we report on a ''soft'' method for the fabrication of ZnO films as TCO layers by using metal organic chemical vapor deposition (MOCVD) at particularly low temperatures. The MOCVD approach has been studied focusing on the TCO key issues: fabrication temperature, morphology, optical, and electrical properties. Very smooth ZnO films with rms values down to 0.8 nm were fabricated at a substrate temperature of only 300 C. Ga-doping is well controllable even for high carrier concentrations up to 2 x 10{sup 20} cm{sup -3}, which is above the Mott-density leading to metallic-like behavior of the films. Furthermore all films show excellent optical transparency in the visible spectral range. As a consequence, our MOCVD approach is well suited for the soft fabrication of ZnO-based TCO layers. (Copyright copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  11. Aluminum-doped zinc oxide films as transparent conductive electrode for organic light-emitting devices

    International Nuclear Information System (INIS)

    Jiang, X.; Wong, F.L.; Fung, M.K.; Lee, S.T.

    2003-01-01

    Highly transparent conductive, aluminum-doped zinc oxide (ZnO:Al) films were deposited on glass substrates by midfrequency magnetron sputtering of metallic aluminum-doped zinc target. ZnO:Al films with surface work functions between 3.7 and 4.4 eV were obtained by varying the sputtering conditions. Organic light-emitting diodes (OLEDs) were fabricated on these ZnO:Al films. A current efficiency of higher than 3.7 cd/A, was achieved. For comparison, 3.9 cd/A was achieved by the reference OLEDs fabricated on commercial indium-tin-oxide substrates

  12. Fabrication of AZO TCO Films by RF-sputtering and Their Physical Properties

    Directory of Open Access Journals (Sweden)

    Jang T.S.

    2016-01-01

    Full Text Available We report on the fabrication of Al-doped ZnO (AZO transparent-conductive oxide (TCO films on glass substrates by RF-sputtering, their physical properties, and the effect of thermal annealing on the AZO TCO films. The AZO films on glass substrates have a preferred orientation of the c-axis, irrespective of deposition conditions, which means that the AZO films have textured structures along the c-axis. The film thickness and surface roughness in the AZO films are proportional to plasma power and deposition time, while they are inverse-proportional to working gas ratio and working pressure. The AZO films have the optical transmittance over 80 % in the wavelength range of 400 – 1000 nm, irrespective of deposition conditions. The plasma power and the deposition time relatively give a large influence on the optical transmittance, compared to the working gas ratio and the working pressure. The AZO films deposited at room temperature have poor electrical properties, while the thermal annealing under Ar ambient significantly improves the electrical conductivity of the AZO films: an as-deposited sample has an electrical resistivity of 87 Wcm and an electron concentration of 1.3´1017 cm−3, while the annealed sample has an electrical resistivity of 3.7´10-2 Wcm and an electron concentration of 1.2´1020 cm−3.

  13. Synthesis, nanostructure and magnetic properties of FeCo-reduced graphene oxide composite films by one-step electrodeposition

    International Nuclear Information System (INIS)

    Cao, Derang; Li, Hao; Wang, Zhenkun; Wei, Jinwu; Wang, Jianbo; Liu, Qingfang

    2015-01-01

    FeCo-reduced graphene oxide (FeCo-RGO) composite film was fabricated on indium tin oxide substrate using one-step electrodeposition method. Raman spectroscopy and field emission scanning electron microscope results show that the reduced graphene oxide is coprecipitated with the FeCo film. The energy-dispersive spectrometer results demonstrate that the atomic ratio of Fe/Co in FeCo-RGO composite film is larger than that of the FeCo film under the same fabrication condition. As a result, the FeCo-RGO composite film exhibits good soft magnetic properties and high-frequency properties as well as the FeCo film. The magnetic anisotropy field and saturation magnetization of FeCo-RGO composite film are increased when compared with FeCo film. Furthermore, the ferromagnetic resonance frequency is improved from 2.15 GHz for the FeCo film to 3.9 GHz for the FeCo-RGO composite film. - Highlights: • FeCo-reduced graphene oxide composite film was fabricated on indium tin oxide substrate. • One step electrodeposition method was used. • Good soft magnetic properties were exhibited by the composite films. • Increase of resonance frequency from 2.15 GHz for FeCo film to 3.9 GHz for composite film

  14. Fabrication and electrochemical properties of free-standing single-walled carbon nanotube film electrodes

    International Nuclear Information System (INIS)

    Niu Zhi-Qiang; Ma Wen-Jun; Dong Hai-Bo; Li Jin-Zhu; Zhou Wei-Ya

    2011-01-01

    An easily manipulative approach was presented to fabricate electrodes using free-standing single-walled carbon nanotube (SWCNT) films grown directly by chemical vapor deposition. Electrochemical properties of the electrodes were investigated. In comparison with the post-deposited SWCNT papers, the directly grown SWCNT film electrodes manifested enhanced electrochemical properties and sensitivity of sensors as well as excellent electrocatalytic activities. A transition from macroelectrode to nanoelectrode behaviours was observed with the increase of scan rate. The heat treatment of the SWCNT film electrodes increased the current signals of electrochemical analyser and background current, because the heat-treatment of the SWCNTs in air could create more oxide defects on the walls of the SWCNTs and make the surfaces of SWCNTs more hydrophilic. The excellent electrochemical properties of the directly grown and heat-treated free-standing SWCNT film electrodes show the potentials in biological and electrocatalytic applications. (cross-disciplinary physics and related areas of science and technology)

  15. Gasochromic performance of WO3-nanorod thin films fabricated with an ArF excimer laser

    International Nuclear Information System (INIS)

    Yaacob, M. H.; Ou, J. Z.; Wlodarski, W.; Kim, C. S.; Lee, J. Y.; Kim, Y. H.; Oh, C. M.; Dhakal, K. P.; Kim, J. Y.; Kang, J. H.

    2012-01-01

    Thin films with tungsten trioxide (WO 3 ) nanorods were fabricated by using an ArF pulsed laser deposition system. Because the ArF excimer laser operates at a very short wavelength of 193 nm, short enough to expect strong absorption of the photons in the semiconductor oxide targets, and because the clusters incoming to the substrates have high momentum, we could build thin films with good surface morphology. Highly homogeneous arrays of nanorods with sizes mostly in the range of 30 - 40 nm were observed. The absorbance response towards hydrogen (H 2 ) gas was investigated for a WO 3 film coated with 25-A-thick palladium (Pd). The Pd/WO 3 -nanorod thin films exhibited excellent gasochromic response when measured in the visible-NIR range (400 - 1000 nm). As low as 0.06% H 2 concentration was clearly sensed. A significant reversible absorbance change and fast recovery ( 2 at different concentrations.

  16. Constrained Sintering in Fabrication of Solid Oxide Fuel Cells.

    Science.gov (United States)

    Lee, Hae-Weon; Park, Mansoo; Hong, Jongsup; Kim, Hyoungchul; Yoon, Kyung Joong; Son, Ji-Won; Lee, Jong-Ho; Kim, Byung-Kook

    2016-08-09

    Solid oxide fuel cells (SOFCs) are inevitably affected by the tensile stress field imposed by the rigid substrate during constrained sintering, which strongly affects microstructural evolution and flaw generation in the fabrication process and subsequent operation. In the case of sintering a composite cathode, one component acts as a continuous matrix phase while the other acts as a dispersed phase depending upon the initial composition and packing structure. The clustering of dispersed particles in the matrix has significant effects on the final microstructure, and strong rigidity of the clusters covering the entire cathode volume is desirable to obtain stable pore structure. The local constraints developed around the dispersed particles and their clusters effectively suppress generation of major process flaws, and microstructural features such as triple phase boundary and porosity could be readily controlled by adjusting the content and size of the dispersed particles. However, in the fabrication of the dense electrolyte layer via the chemical solution deposition route using slow-sintering nanoparticles dispersed in a sol matrix, the rigidity of the cluster should be minimized for the fine matrix to continuously densify, and special care should be taken in selecting the size of the dispersed particles to optimize the thermodynamic stability criteria of the grain size and film thickness. The principles of constrained sintering presented in this paper could be used as basic guidelines for realizing the ideal microstructure of SOFCs.

  17. Constrained Sintering in Fabrication of Solid Oxide Fuel Cells

    Science.gov (United States)

    Lee, Hae-Weon; Park, Mansoo; Hong, Jongsup; Kim, Hyoungchul; Yoon, Kyung Joong; Son, Ji-Won; Lee, Jong-Ho; Kim, Byung-Kook

    2016-01-01

    Solid oxide fuel cells (SOFCs) are inevitably affected by the tensile stress field imposed by the rigid substrate during constrained sintering, which strongly affects microstructural evolution and flaw generation in the fabrication process and subsequent operation. In the case of sintering a composite cathode, one component acts as a continuous matrix phase while the other acts as a dispersed phase depending upon the initial composition and packing structure. The clustering of dispersed particles in the matrix has significant effects on the final microstructure, and strong rigidity of the clusters covering the entire cathode volume is desirable to obtain stable pore structure. The local constraints developed around the dispersed particles and their clusters effectively suppress generation of major process flaws, and microstructural features such as triple phase boundary and porosity could be readily controlled by adjusting the content and size of the dispersed particles. However, in the fabrication of the dense electrolyte layer via the chemical solution deposition route using slow-sintering nanoparticles dispersed in a sol matrix, the rigidity of the cluster should be minimized for the fine matrix to continuously densify, and special care should be taken in selecting the size of the dispersed particles to optimize the thermodynamic stability criteria of the grain size and film thickness. The principles of constrained sintering presented in this paper could be used as basic guidelines for realizing the ideal microstructure of SOFCs. PMID:28773795

  18. Water clustering on nanostructured iron oxide films

    DEFF Research Database (Denmark)

    Merte, Lindsay Richard; Bechstein, Ralf; Peng, G.

    2014-01-01

    , but it is not well-understood how these hydroxyl groups and their distribution on a surface affect the molecular-scale structure at the interface. Here we report a study of water clustering on a moire-structured iron oxide thin film with a controlled density of hydroxyl groups. While large amorphous monolayer...... islands form on the bare film, the hydroxylated iron oxide film acts as a hydrophilic nanotemplate, causing the formation of a regular array of ice-like hexameric nanoclusters. The formation of this ordered phase is localized at the nanometre scale; with increasing water coverage, ordered and amorphous...

  19. Fabrication and characterization of conductive anodic aluminum oxide substrates

    Science.gov (United States)

    Altuntas, Sevde; Buyukserin, Fatih

    2014-11-01

    Biomaterials that allow the utilization of electrical, chemical and topographic cues for improved neuron-material interaction and neural regeneration hold great promise for nerve tissue engineering applications. The nature of anodic aluminum oxide (AAO) membranes intrinsically provides delicate control over topographic and chemical cues for enhanced cell interaction; however their use in nerve regeneration is still very limited. Herein, we report the fabrication and characterization of conductive AAO (CAAO) surfaces for the ultimate goal of integrating electrical cues for improved nerve tissue behavior on the nanoporous substrate material. Parafilm was used as a protecting polymer film, for the first time, in order to obtain large area (50 cm2) free-standing AAO membranes. Carbon (C) was then deposited on the AAO surface via sputtering. Morphological characterization of the CAAO surfaces revealed that the pores remain open after the deposition process. The presence of C on the material surface and inside the nanopores was confirmed by XPS and EDX studies. Furthermore, I-V curves of the surface were used to extract surface resistance values and conductive AFM demonstrated that current signals can only be achieved where conductive C layer is present. Finally, novel nanoporous C films with controllable pore diameters and one dimensional (1-D) C nanostructures were obtained by the dissolution of the template AAO substrate.

  20. Amorphous Hafnium-Indium-Zinc Oxide Semiconductor Thin Film Transistors

    Directory of Open Access Journals (Sweden)

    Sheng-Po Chang

    2012-01-01

    Full Text Available We reported on the performance and electrical properties of co-sputtering-processed amorphous hafnium-indium-zinc oxide (α-HfIZO thin film transistors (TFTs. Co-sputtering-processed α-HfIZO thin films have shown an amorphous phase in nature. We could modulate the In, Hf, and Zn components by changing the co-sputtering power. Additionally, the chemical composition of α-HfIZO had a significant effect on reliability, hysteresis, field-effect mobility (μFE, carrier concentration, and subthreshold swing (S of the device. Our results indicated that we could successfully and easily fabricate α-HfIZO TFTs with excellent performance by the co-sputtering process. Co-sputtering-processed α-HfIZO TFTs were fabricated with an on/off current ratio of ~106, higher mobility, and a subthreshold slope as steep as 0.55 V/dec.

  1. 16 CFR 1611.35 - Testing certain classes of fabric and film.

    Science.gov (United States)

    2010-01-01

    ... 16 Commercial Practices 2 2010-01-01 2010-01-01 false Testing certain classes of fabric and film... REGULATIONS STANDARD FOR THE FLAMMABILITY OF VINYL PLASTIC FILM Rules and Regulations § 1611.35 Testing certain classes of fabric and film. (a) Fabric not customarily washed or dry cleaned. (1) Except as...

  2. 16 CFR 1611.33 - Test procedures for textile fabrics and film.

    Science.gov (United States)

    2010-01-01

    ... 16 Commercial Practices 2 2010-01-01 2010-01-01 false Test procedures for textile fabrics and film... REGULATIONS STANDARD FOR THE FLAMMABILITY OF VINYL PLASTIC FILM Rules and Regulations § 1611.33 Test procedures for textile fabrics and film. (a)(1) All textile fabrics (except those with a nitro-cellulose...

  3. 16 CFR 1610.33 - Test procedures for textile fabrics and film.

    Science.gov (United States)

    2010-01-01

    ... 16 Commercial Practices 2 2010-01-01 2010-01-01 false Test procedures for textile fabrics and film... for textile fabrics and film. (a)(1) All textile fabrics (except those with a nitro-cellulose fiber... under the procedures outlined in part 1611, Standard for the Flammability of Vinyl Plastic Film, and if...

  4. Effects of oxygen gas flow rate and ion beam plasma conditions on the opto-electronic properties of indium molybdenum oxide films fabricated by ion beam-assisted evaporation

    International Nuclear Information System (INIS)

    Kuo, C.C.; Liu, C.C.; Lin, C.C.; Liou, Y.Y.; He, J.L.; Chen, F.S.

    2008-01-01

    The purpose of the present work is to experimentally study the effects of the oxygen gas flow rate and ion beam plasma conditions on the properties of indium molybdenum oxide (IMO) films deposited onto the polyethersulfone (PES) substrate. Crystal structure, surface morphology, and optoelectronic properties of IMO films are examined as a function of oxygen gas flow rate and ion beam discharge voltage. Experimental results show that the IMO films consist of a cubic bixbyite B-In 2 O 3 single phase with its crystal preferred orientation alone B(222). Mo 6+ ions are therefore considered to partially substitute In 3+ sites in the deposit. Under-controlled ion bombardment during deposition enhances the reaction among those arriving oxygen and metal ion species to condense into IMO film and facilitates a decreased surface roughness of IMO film. The film with ultimate crystallinity and the lowest surface roughness is obtained when the oxygen flow rate of 3 sccm and the discharge voltage of 110 V are employed. This results in the lowest electrical resistivity due mainly to the increased Hall mobility and irrelevant to carrier concentration. The lowest electrical resistivity of 8.63 x 10 -4 ohm-cm with a 84.63% transmittance at a wavelength of 550 nm can be obtained, which satisfies the requirement of a flexible transparent conductive polymer substrate

  5. Rare earth [beta]-diketonate and carboxylate metal complexes as precursors for MOCVD of oxide films

    Energy Technology Data Exchange (ETDEWEB)

    Kuzmina, N.P. (Dept. of Chemistry, Moscow State Univ. (Russian Federation)); Martynenko, L.I. (Dept. of Chemistry, Moscow State Univ. (Russian Federation)); Tu, Z.A. (Dept. of Chemistry, Moscow State Univ. (Russian Federation)); Kaul, A.R. (Dept. of Chemistry, Moscow State Univ. (Russian Federation)); Girichev, G.V. (Dept. of Chemistry, Moscow State Univ. (Russian Federation)); Giricheva, N.I. (Dept. of Chemistry, Moscow State Univ. (Russian Federation)); Rykov, A.N. (Dept. of Chemistry, Moscow State Univ. (Russian Federation)); Korenev, Y.M. (Dept. of Chemistry, Moscow State Univ. (Russian Federation))

    1993-08-01

    Volatile and thermostable complexes of lanthanide acetylacetonates and pivalates were obtained and investigated by different methods. These compounds were used for lanthanide oxide containing film producing and for fabrication of silica optical fibers doped by lanthanide oxide. The properties of these and already known volatile precursors are compared. (orig.).

  6. Rare earth β-diketonate and carboxylate metal complexes as precursors for MOCVD of oxide films

    International Nuclear Information System (INIS)

    Kuzmina, N.P.; Martynenko, L.I.; Tu, Z.A.; Kaul, A.R.; Girichev, G.V.; Giricheva, N.I.; Rykov, A.N.; Korenev, Y.M.

    1993-01-01

    Volatile and thermostable complexes of lanthanide acetylacetonates and pivalates were obtained and investigated by different methods. These compounds were used for lanthanide oxide containing film producing and for fabrication of silica optical fibers doped by lanthanide oxide. The properties of these and already known volatile precursors are compared. (orig.)

  7. Effect of micro-patterned fluorine-doped tin oxide films on electrochromic properties of Prussian blue films

    International Nuclear Information System (INIS)

    Lee, Kyuha; Kim, A-Young; Park, Ji Hun; Jung, Hun-Gi; Choi, Wonchang; Lee, Hwa Young; Lee, Joong Kee

    2014-01-01

    Graphical abstract: - Highlights: • PB-based ECD employed micro-patterned FTO electrode was fabricated. • Effect of interface morphology on electrochromic characteristics was examined. • Electrochromic properties were enhanced by employing a patterned interface. - Abstract: The effect of interface morphology on electrochromic characteristics was examined for an electrochromic device (ECD). Micro-patterned fluorine-doped tin oxide (FTO) films were fabricated using a photolithography process. Prussian blue (PB) films were then deposited on the patterned FTO films. The surface areas of both PB films and FTO films were increased by patterning. ECDs were assembled using patterned PB/FTO films as the electrochromic electrode, bare FTO films as the counter electrode, and an electrolyte containing LiClO 4 salt. The increased effective surface area of the patterned PB/FTO electrode boosted the mobility of ions at the interphase between the electrolyte and PB electrode, and the electron transfer between PB films and FTO films. As a result, electrochromic properties such as transmittance and response time were significantly improved by employing the patterned FTO films as the transparent conductive oxide layer of the electrochromic electrode

  8. Effect of micro-patterned fluorine-doped tin oxide films on electrochromic properties of Prussian blue films

    Energy Technology Data Exchange (ETDEWEB)

    Lee, Kyuha [Center for Energy Convergence Research, Green City Technology Institute, Korea Institute of Science and Technology, Hwarangno 14-gil 5, Seongbuk-gu, Seoul 136-791 (Korea, Republic of); Kim, A-Young [Center for Energy Convergence Research, Green City Technology Institute, Korea Institute of Science and Technology, Hwarangno 14-gil 5, Seongbuk-gu, Seoul 136-791 (Korea, Republic of); Department of Material Science and Engineering, Korea University, Seoul 136-701 (Korea, Republic of); Park, Ji Hun; Jung, Hun-Gi; Choi, Wonchang; Lee, Hwa Young [Center for Energy Convergence Research, Green City Technology Institute, Korea Institute of Science and Technology, Hwarangno 14-gil 5, Seongbuk-gu, Seoul 136-791 (Korea, Republic of); Lee, Joong Kee, E-mail: leejk@kist.re.kr [Center for Energy Convergence Research, Green City Technology Institute, Korea Institute of Science and Technology, Hwarangno 14-gil 5, Seongbuk-gu, Seoul 136-791 (Korea, Republic of)

    2014-09-15

    Graphical abstract: - Highlights: • PB-based ECD employed micro-patterned FTO electrode was fabricated. • Effect of interface morphology on electrochromic characteristics was examined. • Electrochromic properties were enhanced by employing a patterned interface. - Abstract: The effect of interface morphology on electrochromic characteristics was examined for an electrochromic device (ECD). Micro-patterned fluorine-doped tin oxide (FTO) films were fabricated using a photolithography process. Prussian blue (PB) films were then deposited on the patterned FTO films. The surface areas of both PB films and FTO films were increased by patterning. ECDs were assembled using patterned PB/FTO films as the electrochromic electrode, bare FTO films as the counter electrode, and an electrolyte containing LiClO{sub 4} salt. The increased effective surface area of the patterned PB/FTO electrode boosted the mobility of ions at the interphase between the electrolyte and PB electrode, and the electron transfer between PB films and FTO films. As a result, electrochromic properties such as transmittance and response time were significantly improved by employing the patterned FTO films as the transparent conductive oxide layer of the electrochromic electrode.

  9. Fabrication of polypeptide-based piezoelectric composite polymer film

    International Nuclear Information System (INIS)

    Farrar, Dawnielle; West, James E.; Busch-Vishniac, Ilene J.; Yu, Seungju M.

    2008-01-01

    A new class of molecular composite piezoelectric material was produced by simultaneous poling and curing of a homogeneous solution comprising poly(γ-benzyl α,L-glutamate) and methylmethacrylate via corona discharge methods. This film exhibited high piezoelectricity (d 33 = 23 pC N -1 ), and its mechanical characteristics (modulus = 450 MPa) were similar to those of low molecular weight poly(methylmethacrylate). As it is produced via solution-based fabrication processes, the composite film is conducive to miniaturization for small sensors with integrated electronics, and could also potentially be used in piezoelectric coating applications

  10. Electrical and optical properties of zinc oxide: thin films

    International Nuclear Information System (INIS)

    Zuhairusnizam Md Darus; Abdul Jalil Yeop Majlis; Anis Faridah Md Nor; Burhanuddin Kamaluddin

    1992-01-01

    Zinc oxide films have been prepared by high temperature oxidation of thermally evaporated zinc films on glass substrates. The resulting films are characterized using X-ray diffraction, optical absorption and electrical conductivity measurements. These zinc oxide films are very transparent and photoconductive

  11. Bioinspired, Ultrastrong, Highly Biocompatible, and Bioactive Natural Polymer/Graphene Oxide Nanocomposite Films.

    Science.gov (United States)

    Zhu, Wen-Kun; Cong, Huai-Ping; Yao, Hong-Bin; Mao, Li-Bo; Asiri, Abdullah M; Alamry, Khalid A; Marwani, Hadi M; Yu, Shu-Hong

    2015-09-09

    Tough and biocompatible nanocomposite films: A new type of bioinspired ultrastrong, highly biocompatible, and bioactive konjac glucomannan (KGM)/graphene oxide (GO) nanocomposite film is fabricated on a large scale by a simple solution-casting method. Such KGM-GO composite films exhibit much enhanced mechanical properties under the strong hydrogen-bonding interactions, showing great potential in the fields of tissue engineering and food package. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  12. Combinatorial study of zinc tin oxide thin-film transistors

    Science.gov (United States)

    McDowell, M. G.; Sanderson, R. J.; Hill, I. G.

    2008-01-01

    Groups of thin-film transistors using a zinc tin oxide semiconductor layer have been fabricated via a combinatorial rf sputtering technique. The ZnO :SnO2 ratio of the film varies as a function of position on the sample, from pure ZnO to SnO2, allowing for a study of zinc tin oxide transistor performance as a function of channel stoichiometry. The devices were found to have mobilities ranging from 2to12cm2/Vs, with two peaks in mobility in devices at ZnO fractions of 0.80±0.03 and 0.25±0.05, and on/off ratios as high as 107. Transistors composed predominantly of SnO2 were found to exhibit light sensitivity which affected both the on/off ratios and threshold voltages of these devices.

  13. Photoluminescence of Mg_2Si films fabricated by magnetron sputtering

    International Nuclear Information System (INIS)

    Liao, Yang-Fang; Xie, Quan; Xiao, Qing-Quan; Chen, Qian; Fan, Meng-Hui; Xie, Jing; Huang, Jin; Zhang, Jin-Min; Ma, Rui; Wang, Shan-Lan; Wu, Hong-Xian; Fang, Di

    2017-01-01

    Highlights: • High quality Mg_2Si films were grown on Si (111) and glass substrates with magnetron sputtering, respectively. • The first observation of Photoluminescence (PL) of Mg_2Si films was reported. • The Mg_2Si PL emission wavelengths are almost independence on temperature in the range of 77–300 K. • The strongest PL emissions may be attributed to interstitial Mg donor level to valence band transitions. • The activation energy of Mg_2Si is determined from the quenching of major luminescence peaks. - Abstract: To understand the photoluminescence mechanisms and optimize the design of Mg_2Si-based light-emitting devices, Mg_2Si films were fabricated on silicon (111) and glass substrates by magnetron sputtering technique, and the influences of different substrates on the photoelectric properties of Mg_2Si films were investigated systematically. The crystal structure, cross-sectional morphology, composition ratios and temperature-dependent photoluminescence (PL) of the Mg_2Si films were examined using X-ray diffraction (XRD), Scanning electron microscope (SEM), energy dispersive X-ray spectroscopy (EDS) and PL measurement system, respectively. XRD results indicate that the Mg_2Si film on Si (111) displays polycrystalline structure, whereas Mg_2Si film on glass substrate is of like-monocrystalline structure.SEM results show that Mg_2Si film on glass substrate is very compact with a typical dense columnar structure, and the film on Si substrate represents slight delamination phenomenon. EDS results suggest that the stoichiometry of Mg and Si is approximately 2:1. Photoluminescence (PL) of Mg_2Si films was observed for the first time. The PL emission wavelengths of Mg_2Si are almost independence on temperature in the range of 77–300 K. The PL intensity decreases gradually with increasing temperature. The PL intensity of Mg_2Si films on glass substrate is much larger than that of Mg_2Si film on Si (111) substrate. The activation energy of 18 meV is

  14. Nanostructured hybrid films containing nanophosphor: Fabrication and electronic spectral properties

    Energy Technology Data Exchange (ETDEWEB)

    Camacho, S.A. [Instituto de Biociencias, Letras e Ciencias Exatas, UNESP - Univ Estadual Paulista, Rua Cristovao Colombo, 2265, 15054-000 Sao Jose do Rio Preto, SP (Brazil); Aoki, P.H.B.; Constantino, C.J.L. [Faculdade de Ciencias e Tecnologia, UNESP - Univ Estadual Paulista, Rua Roberto Simonsen, 305, 19060-900 Presidente Prudente, SP (Brazil); Aroca, R.F. [Materials and Surface Science Group, University of Windsor, Windsor, Ont., Canada N9B3P4 (Canada); Pires, A.M., E-mail: anapires@fct.unesp.br [Faculdade de Ciencias e Tecnologia, UNESP - Univ Estadual Paulista, Rua Roberto Simonsen, 305, 19060-900 Presidente Prudente, SP (Brazil)

    2012-11-15

    Highlights: Black-Right-Pointing-Pointer Hybrid film containing the cationic polyelectrolyte PAH and Y{sub 2}O{sub 3}: Er, Yb nanophosphor. Black-Right-Pointing-Pointer LbL film growth was monitored by absorbance x concentration in UV-Vis absorption. Black-Right-Pointing-Pointer FTIR indicated existence of secondary interactions between PAH - nanophosphor layers. Black-Right-Pointing-Pointer The morphology and the spatial distribution of the LbL film were analyzed by Raman. Black-Right-Pointing-Pointer We observed intense electronic emission lines from doping ions in the micro-Raman. - Abstract: The intensive research of the optical properties of rare-earth ions is due to the high quantum efficiency of their emission, very narrow bands, and excellent fluorescence monochromaticity. The photoluminescence data presented here show that the nanophosphor remains a green emitter in Layer-by-Layer (LbL) films leading to potential application in optical devices or biological labeling. The LbL technique, an established method for thin film fabrication with molecular architecture control, is used in the manufacture of a hybrid film containing the cationic polyelectrolyte poly (allylamine hydrochloride) (PAH) and Y{sub 2}O{sub 3}: Er, Yb nanophosphor. The spectroscopic properties of this luminescent nanomaterial are extracted from the spectral data of the powder, cast film and LbL films. The growth of the LbL film was monitored by absorbance versus concentration plots in ultraviolet-visible (UV-Vis) absorption spectroscopy. The presence of both PAH and nanophosphor in the LbL film was confirmed by Fourier transform infrared (FTIR) absorption spectroscopy. The FTIR data also ruled out the existence of chemical interactions between the PAH and nanophosphor layers, which means that secondary interactions (like Van der Waals forces) might be the driving forces for LbL film growth. The morphology and the spatial distribution of the LbL film components along the film surface were

  15. Fabrication of disposable topographic silicon oxide from sawtoothed patterns: control of arrays of gold nanoparticles.

    Science.gov (United States)

    Cho, Heesook; Yoo, Hana; Park, Soojin

    2010-05-18

    Disposable topographic silicon oxide patterns were fabricated from polymeric replicas of sawtoothed glass surfaces, spin-coating of poly(dimethylsiloxane) (PDMS) thin films, and thermal annealing at certain temperature and followed by oxygen plasma treatment of the thin PDMS layer. A simple imprinting process was used to fabricate the replicated PDMS and PS patterns from sawtoothed glass surfaces. Next, thin layers of PDMS films having different thicknesses were spin-coated onto the sawtoothed PS surfaces and annealed at 60 degrees C to be drawn the PDMS into the valley of the sawtoothed PS surfaces, followed by oxygen plasma treatment to fabricate topographic silicon oxide patterns. By control of the thickness of PDMS layers, silicon oxide patterns having various line widths were fabricated. The silicon oxide topographic patterns were used to direct the self-assembly of polystyrene-block-poly(2-vinylpyridine) (PS-b-P2VP) block copolymer thin films via solvent annealing process. A highly ordered PS-b-P2VP micellar structure was used to let gold precursor complex with P2VP chains, and followed by oxygen plasma treatment. When the PS-b-P2VP thin films containing gold salts were exposed to oxygen plasma environments, gold salts were reduced to pure gold nanoparticles without changing high degree of lateral order, while polymers were completely degraded. As the width of trough and crest in topographic patterns increases, the number of gold arrays and size of gold nanoparticles are tuned. In the final step, the silicon oxide topographic patterns were selectively removed by wet etching process without changing the arrays of gold nanoparticles.

  16. Fiber Fabrication Facility for Non-Oxide and Specialty Glasses

    Data.gov (United States)

    Federal Laboratory Consortium — FUNCTION: Unique facility for the research, development, and fabrication of non-oxide and specialty glasses and fibers in support of Navy/DoD programs.DESCRIPTION:...

  17. Ductile all-cellulose nanocomposite films fabricated from core-shell structured cellulose nanofibrils.

    Science.gov (United States)

    Larsson, Per A; Berglund, Lars A; Wågberg, Lars

    2014-06-09

    Cellulosic materials have many desirable properties such as high mechanical strength and low oxygen permeability and will be an important component in a sustainable biomaterial-based society, but unfortunately they often lack the ductility and formability offered by petroleum-based materials. This paper describes the fabrication and characterization of nanocomposite films made of core-shell modified cellulose nanofibrils (CNFs) surrounded by a shell of ductile dialcohol cellulose, created by heterogeneous periodate oxidation followed by borohydride reduction of the native cellulose in the external parts of the individual fibrils. The oxidation with periodate selectively produces dialdehyde cellulose, and the process does not increase the charge density of the material. Yet the modified cellulose fibers could easily be homogenized to CNFs. Prior to film fabrication, the CNF was shown by atomic force microscopy to be 0.5-2 μm long and 4-10 nm wide. The films were fabricated by filtration, and besides uniaxial tensile testing at different relative humidities, they were characterized by scanning electron microscopy and oxygen permeability. The strength-at-break at 23 °C and 50% RH was 175 MPa, and the films could, before rupture, be strained, mainly by plastic deformation, to about 15% and 37% at 50% RH and 90% RH, respectively. This moisture plasticization was further utilized to form a demonstrator consisting of a double-curved structure with a nominal strain of 24% over the curvature. At a relative humidity of 80%, the films still acted as a good oxygen barrier, having an oxygen permeability of 5.5 mL·μL/(m(2)·24 h·kPa). These properties indicate that this new material has a potential for use as a barrier in complex-shaped structures and hence ultimately reduce the need for petroleum-based plastics.

  18. PZT Films Fabricated by Metal Organic Decomposition Method

    Science.gov (United States)

    Sobolev, Vladimir; Ishchuk, Valeriy

    2014-03-01

    High quality lead zirconate titanate films have been fabricated on different substrates by metal organic decomposition method and their ferroelectric properties have been investigated. Main attention was paid to studies of the influence of the buffer layer with conditional composition Pb1.3(Zr0.5Ti0.5) O3 on the properties of Pb(Zr0.5Ti0.5) O3 films fabricated on the polycrystalline titanium and platinum substrates. It is found that in the films on the Pt substrate (with or without the buffer layer) the dependencies of the remanent polarization and the coercivity field on the number of switching cycles do not manifest fatigue up to 109 cycles. The remanent polarization dependencies for films on the Ti substrate with the buffer layer containing an excess of PbO demonstrate an fundamentally new feature that consists of a remanent polarization increase after 108 switching cycles. The increase of remanent polarization is about 50% when the number of cycles approaches 1010, while the increase of the coercivity field is small. A monotonic increase of dielectric losses has been observed in all cases.

  19. Fabrication and photoelectrochemical properties of ZnS/Au/TiO2 nanotube array films.

    Science.gov (United States)

    Zhu, Yan-Feng; Zhang, Juan; Xu, Lu; Guo, Ya; Wang, Xiao-Ping; Du, Rong-Gui; Lin, Chang-Jian

    2013-03-21

    A highly ordered TiO(2) nanotube array film was fabricated by an anodic oxidation method. The film was modified by Au nanoparticles (NPs) formed by a deposition-precipitation technique and was covered with a thin ZnS shell prepared by a successive ionic layer adsorption and reaction (SILAR) method. The photoelectrochemical properties of the prepared ZnS/Au/TiO(2) composite film were evaluated by incident photon-to-current conversion efficiency (IPCE), and photopotential and electrochemical impedance spectroscopy (EIS) measurements under white light illumination. The results indicated that the Au NPs could expand the light sensitivity range of the film and suppress the electron-hole recombination, and the ZnS shell could inhibit the leakage of photogenerated electrons from the surface of Au NPs to the ZnS/electrolyte interface. When the 403 stainless steel in a 0.5 M NaCl solution was coupled to the ZnS/Au/TiO(2) nanotube film photoanode under illumination, its potential decreased by 400 mV, showing that the composite film had a better photocathodic protection effect on the steel than that of a pure TiO(2) nanotube film.

  20. Laser patterning of superconducting oxide films

    International Nuclear Information System (INIS)

    Gupta, A.; Hussey, B.W.; Koren, G.; Cooper, E.I.; Jagannathan, R.

    1988-01-01

    The focused output of an argon ion laser (514.5 nm) has been used for wiring superconducting lines of Y/sub 1/Ba/sub 2/CU/sub 3/O/sub 7-δ/ using films prepared from nitrate and trifluoroacetate solution precursors. A stoichiometric solution of the precursors is sprayed or spun on to the substrate to form a film. The film is patterned by irradiating in selected areas to convert the irradiated layers to an intermediate oxide or fluoride state, the nonirradiated areas being unchanged. The nonirradiated areas are then dissolved away, leaving a pattern of the oxide or fluoride material. This patterned layer is converted to the superconducting 1-2-3 oxide in a subsequent annealing step. Maskless patterning of superconducting films has also been demonstrated by laser-assisted etching of the films in aqueous KOH solution. Although superconductivity is destroyed when the films are placed in solution, it can be restored after a brief anneal in oxygen

  1. Swelling of a Zirconium Oxide Film

    International Nuclear Information System (INIS)

    Henderson, Mark; Hawley, Adrian; White, John; Rennie, Adrian

    2005-01-01

    Full text: The structural changes that cause the change in the interlayer spacing of a surfactanttemplated zirconium oxide film have been studied using neutron diffractometry. We report that the film after drying on a glass substrate swells slightly through the addition of benzene by up to 4 Aangstroem on a lattice parameter of about 36 Aangstroem. The (001) and (002) diffraction peaks positions, widths and areas of a swollen film were then monitored by neutron diffraction as a function of benzene desorption. Disorder of the lamellar mesophase is considered as a cause of the observed effects on the diffraction signals. (authors)

  2. Swelling of a mesostructured zirconium oxide film

    Energy Technology Data Exchange (ETDEWEB)

    Henderson, M.J. [Research School of Chemistry, Australian National University, Canberra, ACT 0200 (Australia); Rennie, A.R. [Uppsala University, Studsvik Neutron Research Laboratory, S-611 82 Nykoeping (Sweden); Hawley, A.M. [Research School of Chemistry, Australian National University, Canberra, ACT 0200 (Australia); White, J.W. [Research School of Chemistry, Australian National University, Canberra, ACT 0200 (Australia)]. E-mail: jww@rsc.anu.edu.au

    2006-11-15

    The structural changes that cause the change in interlayer spacing of a surfactant-templated zirconium oxide film have been studied using neutron diffractometry. We report that the film after drying on a glass substrate swells slightly through the addition of benzene by up to 4 A on a lattice parameter of about 36 A. The (0 0 1) and (0 0 2) diffraction peak widths, positions and areas of a swollen film were monitored as a function of benzene desorption. Disorder of the lamellar mesophase is considered as a cause of the observed effects on the diffraction signals.

  3. Structural and Electrochemical Properties of Lithium Nickel Oxide Thin Films

    Directory of Open Access Journals (Sweden)

    Gyu-bong Cho

    2014-01-01

    Full Text Available LiNiO2 thin films were fabricated by RF magnetron sputtering. The microstructure of the films was determined by X-ray diffraction and field-emission scanning electron microscopy. The electrochemical properties were investigated with a battery cycler using coin-type half-cells. The LiNiO2 thin films annealed below 500°C had the surface carbonate. The results suggest that surface carbonate interrupted the Li intercalation and deintercalation during charge/discharge. Although the annealing process enhanced the crystallization of LiNiO2, the capacity did not increase. When the annealing temperature was increased to 600°C, the FeCrNiO4 oxide phase was generated and the discharge capacity decreased due to an oxygen deficiency in the LiNiO2 thin film. The ZrO2-coated LiNiO2 thin film provided an improved discharge capacity compared to bare LiNiO2 thin film suggesting that the improved electrochemical characteristic may be attributed to the inhibition of surface carbonate by ZrO2 coating layer.

  4. Anodic Aluminum Oxide Templates for Nano wires Array Fabrication

    International Nuclear Information System (INIS)

    Nur Ubaidah Saidin; Kok, K.Y.; Ng, I.K.

    2011-01-01

    This paper reports on the process developed to fabricate anodic aluminium oxide (AAO) templates suitable for the fabrication of nano wire arrays. Anodization process has been used to fabricate the AAO templates with pore diameters ranging from 15 nm to 30 nm. Electrodeposition of parallel arrays of high aspect ratio nickel nano wires were demonstrated using these fabricated AAO templates. The nano wires produced were characterized using X-ray diffraction (XRD) and scanning electron microscopy (SEM). It was found that the orientations of the electrodeposited nickel nano wires were governed by the deposition current and electrolyte conditions. (author)

  5. Manganese Oxide on Carbon Fabric for Flexible Supercapacitors

    Directory of Open Access Journals (Sweden)

    Jianfeng Zhang

    2016-01-01

    Full Text Available We report the fabrication of uniform large-area manganese oxide (MnO2 nanosheets on carbon fabric which oxidized using O2 plasma treatment (MnO2/O2-carbon fabric via electrodeposition process and their implementation as supercapacitor electrodes. Electrochemical measurements demonstrated that MnO2/O2-carbon fabric exhibited capacitance as high as 275 F/g at a scan rate of 5 mV/s; in addition, it showed an excellent cycling performance (less than 20% capacitance loss after 10,000 cycles. All the results suggest that MnO2/O2-carbon fabric is a promising electrode material which has great potential for application on flexible supercapacitors.

  6. Polymer thin film as coating layer to prevent corrosion of metal/metal oxide film

    Science.gov (United States)

    Sarkar, Suman; Kundu, Sarathi

    2018-04-01

    Thin film of polymer is used as coating layer and the corrosion of metal/metal oxide layer is studied with the variation of the thickness of the coating layer. The thin layer of polystyrene is fabricated using spin coating method on copper oxide (CuO) film which is deposited on glass substrate using DC magnetron sputtering technique. Thickness of the polystyrene and the CuO layers are determined using X-ray reflectivity (XRR) technique. CuO thin films coated with the polystyrene layer are exposed to acetic acid (2.5 v/v% aqueous CH3COOH solution) environments and are subsequently analyzed using UV-Vis spectroscopy and atomic force microscopy (AFM). Surface morphology of the film before and after interaction with the acidic environment is determined using AFM. Results obtained from the XRR and UV-Vis spectroscopy confirm that the thin film of polystyrene acts as an anticorrosion coating layer and the strength of the coating depends upon the polymer layer thickness at a constant acid concentration.

  7. The fabrication of highly ordered block copolymer micellar arrays: control of the separation distances of silicon oxide dots

    Science.gov (United States)

    Yoo, Hana; Park, Soojin

    2010-06-01

    We demonstrate the fabrication of highly ordered silicon oxide dotted arrays prepared from polydimethylsiloxane (PDMS) filled nanoporous block copolymer (BCP) films and the preparation of nanoporous, flexible Teflon or polyimide films. Polystyrene-block-poly(2-vinylpyridine) (PS-b-P2VP) films were annealed in toluene vapor to enhance the lateral order of micellar arrays and were subsequently immersed in alcohol to produce nano-sized pores, which can be used as templates for filling a thin layer of PDMS. When a thin layer of PDMS was spin-coated onto nanoporous BCP films and thermally annealed at a certain temperature, the PDMS was drawn into the pores by capillary action. PDMS filled BCP templates were exposed to oxygen plasma environments in order to fabricate silicon oxide dotted arrays. By addition of PS homopolymer to PS-b-P2VP copolymer, the separation distances of micellar arrays were tuned. As-prepared silicon oxide dotted arrays were used as a hard master for fabricating nanoporous Teflon or polyimide films by spin-coating polymer precursor solutions onto silicon patterns and peeling off. This simple process enables us to fabricate highly ordered nanoporous BCP templates, silicon oxide dots, and flexible nanoporous polymer patterns with feature size of sub-20 nm over 5 cm × 5 cm.

  8. The fabrication of highly ordered block copolymer micellar arrays: control of the separation distances of silicon oxide dots

    Energy Technology Data Exchange (ETDEWEB)

    Yoo, Hana; Park, Soojin, E-mail: spark@unist.ac.kr [Interdisciplinary School of Green Energy, Ulsan National Institute of Science and Technology, Banyeon-ri 100, Ulsan 689-798 (Korea, Republic of)

    2010-06-18

    We demonstrate the fabrication of highly ordered silicon oxide dotted arrays prepared from polydimethylsiloxane (PDMS) filled nanoporous block copolymer (BCP) films and the preparation of nanoporous, flexible Teflon or polyimide films. Polystyrene-block-poly(2-vinylpyridine) (PS-b-P2VP) films were annealed in toluene vapor to enhance the lateral order of micellar arrays and were subsequently immersed in alcohol to produce nano-sized pores, which can be used as templates for filling a thin layer of PDMS. When a thin layer of PDMS was spin-coated onto nanoporous BCP films and thermally annealed at a certain temperature, the PDMS was drawn into the pores by capillary action. PDMS filled BCP templates were exposed to oxygen plasma environments in order to fabricate silicon oxide dotted arrays. By addition of PS homopolymer to PS-b-P2VP copolymer, the separation distances of micellar arrays were tuned. As-prepared silicon oxide dotted arrays were used as a hard master for fabricating nanoporous Teflon or polyimide films by spin-coating polymer precursor solutions onto silicon patterns and peeling off. This simple process enables us to fabricate highly ordered nanoporous BCP templates, silicon oxide dots, and flexible nanoporous polymer patterns with feature size of sub-20 nm over 5 cm x 5 cm.

  9. Disposable urea biosensor based on nanoporous ZnO film fabricated from omissible polymeric substrate

    International Nuclear Information System (INIS)

    Rahmanian, Reza; Mozaffari, Sayed Ahmad; Abedi, Mohammad

    2015-01-01

    In the present study, a facile and simple fabrication method of a semiconductor based urea biosensor was reported via three steps: (i) producing a ZnO–PVA composite film by means of a polymer assisted electrodeposition of zinc oxide (ZnO) on the F-doped SnO 2 conducting glass (FTO) using water soluble polyvinyl alcohol (PVA), (ii) obtaining a nanoporous ZnO film by PVA omission via a subsequent post-treatment by annealing of the ZnO–PVA film, and (iii) preparation of a FTO/ZnO/Urs biosensor by exploiting a nanoporous ZnO film as an efficient and excellent platform area for electrostatic immobilization of urease enzyme (Urs) which was forced by the difference in their isoelectric point (IEP). The characterization techniques focused on the analysis of the ZnO–PVA film surfaces before and after annealing, which had a prominent effect on the porosity of the prepared ZnO film. The surface characterization of the nanostructured ZnO film by a field emission-scanning electron microscopy (FE–SEM), exhibited a film surface area as an effective bio-sensing matrix for enzyme immobilization. The structural characterization and monitoring of the biosensor fabrication was performed using UV–Vis, Fourier Transform Infrared (FT-IR), Raman Spectroscopy, Thermogravimetric Analysis (TGA), Cyclic Voltammetry (CV), and Electrochemical Impedance Spectroscopy (EIS) techniques. The impedimetric results of the FTO/ZnO/Urs biosensor showed a high sensitivity for urea detection within 8.0–110.0 mg dL −1 with the limit of detection as 5.0 mg dL −1 . - Highlights: • Novel disposable impedimetric urea biosensor fabrication based on ZnO–nanoporous transducer • Exploiting omissible PVA polymer as a simple strategy for ZnO–nanoporous film preparation • ZnO–nanoporous film as a good pore framework with large surface area/volume for enzyme immobilization • Application of impedimetric measurement for urea monitoring due to its rapidity, sensitivity, and repeatability

  10. Disposable urea biosensor based on nanoporous ZnO film fabricated from omissible polymeric substrate

    Energy Technology Data Exchange (ETDEWEB)

    Rahmanian, Reza; Mozaffari, Sayed Ahmad, E-mail: mozaffari@irost.ir; Abedi, Mohammad

    2015-12-01

    In the present study, a facile and simple fabrication method of a semiconductor based urea biosensor was reported via three steps: (i) producing a ZnO–PVA composite film by means of a polymer assisted electrodeposition of zinc oxide (ZnO) on the F-doped SnO{sub 2} conducting glass (FTO) using water soluble polyvinyl alcohol (PVA), (ii) obtaining a nanoporous ZnO film by PVA omission via a subsequent post-treatment by annealing of the ZnO–PVA film, and (iii) preparation of a FTO/ZnO/Urs biosensor by exploiting a nanoporous ZnO film as an efficient and excellent platform area for electrostatic immobilization of urease enzyme (Urs) which was forced by the difference in their isoelectric point (IEP). The characterization techniques focused on the analysis of the ZnO–PVA film surfaces before and after annealing, which had a prominent effect on the porosity of the prepared ZnO film. The surface characterization of the nanostructured ZnO film by a field emission-scanning electron microscopy (FE–SEM), exhibited a film surface area as an effective bio-sensing matrix for enzyme immobilization. The structural characterization and monitoring of the biosensor fabrication was performed using UV–Vis, Fourier Transform Infrared (FT-IR), Raman Spectroscopy, Thermogravimetric Analysis (TGA), Cyclic Voltammetry (CV), and Electrochemical Impedance Spectroscopy (EIS) techniques. The impedimetric results of the FTO/ZnO/Urs biosensor showed a high sensitivity for urea detection within 8.0–110.0 mg dL{sup −1} with the limit of detection as 5.0 mg dL{sup −1}. - Highlights: • Novel disposable impedimetric urea biosensor fabrication based on ZnO–nanoporous transducer • Exploiting omissible PVA polymer as a simple strategy for ZnO–nanoporous film preparation • ZnO–nanoporous film as a good pore framework with large surface area/volume for enzyme immobilization • Application of impedimetric measurement for urea monitoring due to its rapidity, sensitivity, and

  11. Aluminum oxide film thickness and emittance

    International Nuclear Information System (INIS)

    Thomas, J.K.; Ondrejcin, R.S.

    1991-11-01

    Aluminum reactor components which are not actively cooled could be subjected to high temperatures due to gamma heating after the core coolant level dropped during the ECS phase of a hypothetical LOCA event. Radiative heat transfer is the dominant heat transfer process in this scenario and therefore the emittance of these components is of interest. Of particular interest are the safety rod thimbles and Mark 60B blanket assemblies; for the K Reactor, these components have been exposed to low temperature (< 55 degrees C) moderator for about a year. The average moderator temperature was assumed to be 30 degrees C. The Al oxide film thickness at this temperature, after one year of exposure, is predicted to be 6.4 μm ± 10%; insensitive to exposure time. Dehydration of the film during the gamma heating accident would result in a film thickness of 6.0 μm ± 11%. Total hemispherical emittance is predicted to be 0.69 at 96 degrees C, decreasing to 0.45 at 600 degrees C. Some phenomena which would tend to yield thicker oxide films in the reactor environment relative to those obtained under experimental conditions were neglected and the predicted film thickness values are therefore conservative. The emittance values predicted for a given film thickness are also conservative. The conservativisms inherent in the predicted emittance are particularly relevant for uncertainty analysis of temperatures generated using these values

  12. Thermal oxidation of Ni films for p-type thin-film transistors

    KAUST Repository

    Jiang, Jie; Wang, Xinghui; Zhang, Qing; Li, Jingqi; Zhang, Xixiang

    2013-01-01

    p-Type nanocrystal NiO-based thin-film transistors (TFTs) are fabricated by simply oxidizing thin Ni films at temperatures as low as 400 °C. The highest field-effect mobility in a linear region and the current on-off ratio are found to be 5.2 cm2 V-1 s-1 and 2.2 × 103, respectively. X-ray diffraction, transmission electron microscopy and electrical performances of the TFTs with "top contact" and "bottom contact" channels suggest that the upper parts of the Ni films are clearly oxidized. In contrast, the lower parts in contact with the gate dielectric are partially oxidized to form a quasi-discontinuous Ni layer, which does not fully shield the gate electric field, but still conduct the source and drain current. This simple method for producing p-type TFTs may be promising for the next-generation oxide-based electronic applications. © 2013 the Owner Societies.

  13. CO2 gas sensitivity of sputtered zinc oxide thin films

    Indian Academy of Sciences (India)

    TECS

    Gas sensitivity; ZnO; sputtering; XRD patterns; structure; thin films. 1. Introduction. Because zinc ... voltage and absorption properties of those fabricated films have been ... tations are useful in many physical applications. The in- plane (Hegde ...

  14. A simple two-step method to fabricate highly transparent ITO/polymer nanocomposite films

    International Nuclear Information System (INIS)

    Liu, Haitao; Zeng, Xiaofei; Kong, Xiangrong; Bian, Shuguang; Chen, Jianfeng

    2012-01-01

    Highlights: ► A simple two-step method without further surface modification step was employed. ► ITO nanoparticles were easily to be uniformly dispersed in polymer matrix. ► ITO/polymer nanocomposite film had high transparency and UV/IR blocking properties. - Abstract: Transparent functional indium tin oxide (ITO)/polymer nanocomposite films were fabricated via a simple approach with two steps. Firstly, the functional monodisperse ITO nanoparticles were synthesized via a facile nonaqueous solvothermal method using bifunctional chemical agent (N-methyl-pyrrolidone, NMP) as the reaction solvent and surface modifier. Secondly, the ITO/acrylics polyurethane (PUA) nanocomposite films were fabricated by a simple sol-solution mixing method without any further surface modification step as often employed traditionally. Flower-like ITO nanoclusters with about 45 nm in diameter were mono-dispersed in ethyl acetate and each nanocluster was assembled by nearly spherical nanoparticles with primary size of 7–9 nm in diameter. The ITO nanoclusters exhibited an excellent dispersibility in polymer matrix of PUA, remaining their original size without any further agglomeration. When the loading content of ITO nanoclusters reached to 5 wt%, the transparent functional nanocomposite film featured a high transparency more than 85% in the visible light region (at 550 nm), meanwhile cutting off near-infrared radiation about 50% at 1500 nm and blocking UV ray about 45% at 350 nm. It could be potential for transparent functional coating materials applications.

  15. Sputtered tin oxide and titanium oxide thin films as alternative transparent conductive oxides

    Energy Technology Data Exchange (ETDEWEB)

    Boltz, Janika

    2011-12-12

    Alternative transparent conductive oxides to tin doped indium oxide have been investigated. In this work, antimony doped tin oxide and niobium doped titanium oxide have been studied with the aim to prepare transparent and conductive films. Antimony doped tin oxide and niobium doped titanium oxide belong to different groups of oxides; tin oxide is a soft oxide, while titanium oxide is a hard oxide. Both oxides are isolating materials, in case the stoichiometry is SnO{sub 2} and TiO{sub 2}. In order to achieve transparent and conductive films free carriers have to be generated by oxygen vacancies, by metal ions at interstitial positions in the crystal lattice or by cation doping with Sb or Nb, respectively. Antimony doped tin oxide and niobium doped titanium oxide films have been prepared by reactive direct current magnetron sputtering (dc MS) from metallic targets. The process parameters and the doping concentration in the films have been varied. The films have been electrically, optically and structurally analysed in order to analyse the influence of the process parameters and the doping concentration on the film properties. Post-deposition treatments of the films have been performed in order to improve the film properties. For the deposition of transparent and conductive tin oxide, the dominant parameter during the deposition is the oxygen content in the sputtering gas. The Sb incorporation as doping atoms has a minor influence on the electrical, optical and structural properties. Within a narrow oxygen content in the sputtering gas highly transparent and conductive tin oxide films have been prepared. In this study, the lowest resistivity in the as deposited state is 2.9 m{omega} cm for undoped tin oxide without any postdeposition treatment. The minimum resistivity is related to a transition to crystalline films with the stoichiometry of SnO{sub 2}. At higher oxygen content the films turn out to have a higher resistivity due to an oxygen excess. After post

  16. Fabrication of high quality ordered porous anodic aluminum oxide templates

    International Nuclear Information System (INIS)

    Liu Kai; Du Kai; Chen Jing; Zhou Lan; Zhang Lin; Fang Yu

    2010-01-01

    The preparation of porous anodic aluminum oxide (AAO) templates has been studied with oxalic acid as electrolyte. The morphology of the as-prepared templates has been characterized by field-emission scanning electron microscope (FE-SEM). The pores distributed orderly and uniformly with the diameter ranging from 40 nm to 70 nm. The experimental results indicate that electrolyte concentration, oxidation voltage, oxidation temperature and oxidation time affect the structure of AAO templates. Ordered porous AAO templates can be derived without annealing and finishing. X-ray diffraction (XRD) analysis indicates that the aluminum oxide film is mainly composed of amorphous Al 2 O 3 . (authors)

  17. Fabrication and Characterization of Transparent Piezoresistors Using Carbon Nanotube Film

    International Nuclear Information System (INIS)

    Lee, Kang Won; Lee, Seung Seob; Lee, Jung A; Lee, Kwang Cheol

    2010-01-01

    We present the fabrication and characterization of transparent carbon nanotube film (CNF) piezoresistors. CNFs were fabricated by vacuum filtration methods with 65.92% transmittance and patterned on Au-deposited silicon wafer by photolithography and dry etching. The patterned CNFs were transferred onto poly-dimethysiloxane (PDMS) using the weak adhesion property between the silicon wafer and the Au layer. The transferred CNFs were confirmed to be piezoresistors using the equation of concentrated-force-derived resistance change. The gauge factor of the CNFs was measured to range from 10 to 20 as the resistance of the CNFs increased with applied pressure. In polymer microelectromechanical systems, CNF piezoresistors are the promising materials because of their high sensitivity and low-temperature process

  18. Fabrication and characterization of thin-film phosphor combinatorial libraries

    Science.gov (United States)

    Mordkovich, V. Z.; Jin, Zhengwu; Yamada, Y.; Fukumura, T.; Kawasaki, M.; Koinuma, H.

    2002-05-01

    The laser molecular beam epitaxy method was employed to fabricate thin-film combinatorial libraries of ZnO-based phosphors on different substrates. Fabrication of both pixel libraries, on the example of Fe-doped ZnO, and spread libraries, on the example of Eu-doped ZnO, has been demonstrated. Screening of the Fe-doped ZnO libraries led to the discovery of weak green cathodoluminescence with the maximum efficiency at the Fe content of 0.58 mol %. Screening of the Eu-doped ZnO libraries led to the discovery of unusual reddish-violet cathodoluminescence which is observed in a broad range of Eu concentration. No photoluminescence was registered in either system.

  19. Porous Zinc Oxide Thin Films: Synthesis Approaches and Applications

    Directory of Open Access Journals (Sweden)

    Marco Laurenti

    2018-02-01

    Full Text Available Zinc oxide (ZnO thin films have been widely investigated due to their multifunctional properties, i.e., catalytic, semiconducting and optical. They have found practical use in a wide number of application fields. However, the presence of a compact micro/nanostructure has often limited the resulting material properties. Moreover, with the advent of low-dimensional ZnO nanostructures featuring unique physical and chemical properties, the interest in studying ZnO thin films diminished more and more. Therefore, the possibility to combine at the same time the advantages of thin-film based synthesis technologies together with a high surface area and a porous structure might represent a powerful solution to prepare ZnO thin films with unprecedented physical and chemical characteristics that may find use in novel application fields. Within this scope, this review offers an overview on the most successful synthesis methods that are able to produce ZnO thin films with both framework and textural porosities. Moreover, we discuss the related applications, mainly focused on photocatalytic degradation of dyes, gas sensor fabrication and photoanodes for dye-sensitized solar cells.

  20. In-situ fabrication of hybrid polyoxometalate nanoparticles composite films

    International Nuclear Information System (INIS)

    Lan Yang; Mao Baodong; Wang Enbo; Song Yonghai; Kang Zhenhui; Wang Chunlei; Tian Chungui; Zhang Chao; Xu Lin; Li Zhuang

    2007-01-01

    Inorganic-organic hybrid nanoparticles multilayer films were fabricated by extending the method of nucleation and growth of particles in polymer assemblies. The polyelectrolyte matrix was constructed by layer-by-layer self-assembly method. Synthesis of polyoxometalate nanoparticles was achieved by alternately dipping the precursor polyelectrolyte matrix into AgNO 3 and H 4 SiW 12 O 40 aqueous solutions. Repeating the above synthesis process, Ag 4 SiW 12 O 40 nanoparticles with controllable diameters of 20 to 77 nm were synthesized in the multilayer films in-situ. UV-vis absorption spectra indicate that the nanoparticles grew gradually in the synthesis process. Transmission electron microscopy was used to observe the size and morphology of the nanoparticles

  1. Fabrication of superhydrophobic polyaniline films with rapidly switchable wettability

    Science.gov (United States)

    Zhou, Xiaoyan; Zhang, Zhaozhu; Men, Xuehu; Yang, Jin; Xu, Xianghui; Zhu, Xiaotao; Xue, Qunji

    2011-10-01

    A superhydrophobic polyaniline (PANI) film has been fabricated by using a facile one-step spraying method. The PANI was synthesized via in situ doping polymerization in the presence of perfluorooctanoic acid (PFOA) as the dopant. The water contact angle of this superhydrophobic surface reaches to 156°. Both the surface chemical compositions and morphological structures were analyzed. A granular morphology of PANI with a moderate amount of nanofibers was obtained. Moreover, a rapid surface wettability transition between superhydrophobicity and superhydrophilicity can be observed when it is doped with PFOA and de-doped with base. The mechanism for this tunable wettability has been discussed in detail.

  2. Fabrication of flexible conductive films derived from poly(3,4-ethylenedioxythiophene)–poly(styrenesulfonic acid) (PEDOT:PSS) on the nonwoven fabrics substrate

    International Nuclear Information System (INIS)

    Wu, Chieh-Han; Shen, Hsiu-Ping; Don, Trong-Ming; Chiu, Wen-Yen

    2013-01-01

    In this research, conducting poly(3,4-ethylenedioxythiophene)–poly(styrenesulfonic acid) (PEDOT:PSS) aqueous dispersion was synthesized at first via chemical oxidative polymerization and followed by mixing it with poly(styrene-r-butyl acrylate) P(St-BA) aqueous latex, creating a conductive material with outstanding stretchability. The elastic conductive composite were then film formed on the glass and poly(ethylene terephthalate) (PET) nonwoven fabric substrate by spin coating and dip coating, respectively. Composite films with various contents of PEDOT:PSS polymer (10–100 wt.%) had been prepared. From the conductivity measurements, the conductivity was still kept as high as 88 S cm −1 even the PEDOT:PSS content was lowered to 10 wt.%. Furthermore, the elasticity of conductive films on the PET-nonwoven fabric substrate was evaluated by the 180° bending test repeating 100 times. With introducing soft P(St-BA) material in the PEDOT:PSS phase, the surface resistance increased merely 3–6 times after bending 100 times, while the surface resistance for pure PEDOT:PSS film could reach 18–20 times. - Highlights: • Flexible PEDOT:PSS based material had been coated on the PET-nonwoven fabrics. • The integrity of conductive circuit on fabrics was evaluated by bending test. • With adding rubbery material, the flexibility of PEDOT:PSS coating was enhanced

  3. Fabrication of flexible conductive films derived from poly(3,4-ethylenedioxythiophene)–poly(styrenesulfonic acid) (PEDOT:PSS) on the nonwoven fabrics substrate

    Energy Technology Data Exchange (ETDEWEB)

    Wu, Chieh-Han [Institute of Polymer Science and Engineering, National Taiwan University, Taipei 106, Taiwan, ROC (China); Shen, Hsiu-Ping [Department of Chemical Engineering, National Taiwan University, Taipei 106, Taiwan, ROC (China); Don, Trong-Ming, E-mail: tmdon@mail.tku.edu.tw [Department of Chemical and Materials Engineering, Tamkang University, New Taipei 251, Taiwan, ROC (China); Chiu, Wen-Yen, E-mail: ycchiu@ntu.edu.tw [Institute of Polymer Science and Engineering, National Taiwan University, Taipei 106, Taiwan, ROC (China); Department of Chemical Engineering, National Taiwan University, Taipei 106, Taiwan, ROC (China); Department of Materials Science and Engineering, National Taiwan University, Taipei 106, Taiwan, ROC (China)

    2013-12-16

    In this research, conducting poly(3,4-ethylenedioxythiophene)–poly(styrenesulfonic acid) (PEDOT:PSS) aqueous dispersion was synthesized at first via chemical oxidative polymerization and followed by mixing it with poly(styrene-r-butyl acrylate) P(St-BA) aqueous latex, creating a conductive material with outstanding stretchability. The elastic conductive composite were then film formed on the glass and poly(ethylene terephthalate) (PET) nonwoven fabric substrate by spin coating and dip coating, respectively. Composite films with various contents of PEDOT:PSS polymer (10–100 wt.%) had been prepared. From the conductivity measurements, the conductivity was still kept as high as 88 S cm{sup −1} even the PEDOT:PSS content was lowered to 10 wt.%. Furthermore, the elasticity of conductive films on the PET-nonwoven fabric substrate was evaluated by the 180° bending test repeating 100 times. With introducing soft P(St-BA) material in the PEDOT:PSS phase, the surface resistance increased merely 3–6 times after bending 100 times, while the surface resistance for pure PEDOT:PSS film could reach 18–20 times. - Highlights: • Flexible PEDOT:PSS based material had been coated on the PET-nonwoven fabrics. • The integrity of conductive circuit on fabrics was evaluated by bending test. • With adding rubbery material, the flexibility of PEDOT:PSS coating was enhanced.

  4. Method for fabrication of ceramic dielectric films on copper foils

    Science.gov (United States)

    Ma, Beihai; Narayanan, Manoj; Dorris, Stephen E.; Balachandran, Uthamalingam

    2015-03-10

    The present invention provides a method for fabricating a ceramic film on a copper foil. The method comprises applying a layer of a sol-gel composition onto a copper foil. The sol-gel composition comprises a precursor of a ceramic material suspended in 2-methoxyethanol. The layer of sol-gel is then dried at a temperature up to about 250.degree. C. The dried layer is then pyrolyzed at a temperature in the range of about 300 to about 450.degree. C. to form a ceramic film from the ceramic precursor. The ceramic film is then crystallized at a temperature in the range of about 600 to about 750.degree. C. The drying, pyrolyzing and crystallizing are performed under a flowing stream of an inert gas. In some embodiments an additional layer of the sol-gel composition is applied onto the ceramic film and the drying, pyrolyzing and crystallizing steps are repeated for the additional layer to build up a thicker ceramic layer on the copper foil. The process can be repeated one or more times if desired.

  5. Epitaxial thin film growth and properties of unconventional oxide superconductors. Cuprates and cobaltates

    International Nuclear Information System (INIS)

    Krockenberger, Y.

    2006-01-01

    The discovery of high-temperature superconductors has strongly driven the development of suited thin film fabrication methods of complex oxides. One way is the adaptation of molecular beam epitaxy (MBE) for the growth of oxide materials. Another approach is the use of pulsed laser deposition (PLD) which has the advantage of good stoichiometry transfer from target to the substrate. Both techniques are used within this thesis. Epitaxial thin films of new materials are of course needed for future applications. In addition, the controlled synthesis of thin film matter which can be formed far away from thermal equilibrium allows for the investigation of fundamental physical materials properties. (orig.)

  6. Epitaxial thin film growth and properties of unconventional oxide superconductors. Cuprates and cobaltates

    Energy Technology Data Exchange (ETDEWEB)

    Krockenberger, Y.

    2006-07-01

    The discovery of high-temperature superconductors has strongly driven the development of suited thin film fabrication methods of complex oxides. One way is the adaptation of molecular beam epitaxy (MBE) for the growth of oxide materials. Another approach is the use of pulsed laser deposition (PLD) which has the advantage of good stoichiometry transfer from target to the substrate. Both techniques are used within this thesis. Epitaxial thin films of new materials are of course needed for future applications. In addition, the controlled synthesis of thin film matter which can be formed far away from thermal equilibrium allows for the investigation of fundamental physical materials properties. (orig.)

  7. Vanadium oxide thin films deposited on silicon dioxide buffer layers by magnetron sputtering

    International Nuclear Information System (INIS)

    Chen Sihai; Ma Hong; Wang Shuangbao; Shen Nan; Xiao Jing; Zhou Hao; Zhao Xiaomei; Li Yi; Yi Xinjian

    2006-01-01

    Thin films made by vanadium oxide have been obtained by direct current magnetron sputtering method on SiO 2 buffer layers. A detailed electrical and structural characterization has been performed on the deposited films by four-point probe method and scanning electron microscopy (SEM). At room temperature, the four-point probe measurement result presents the resistance of the film to be 25 kU/sheet. The temperature coefficient of resistance is - 2.0%/K. SEM image indicates that the vanadium oxide exhibits a submicrostructure with lamella size ranging from 60 nm to 300 nm. A 32 x 32-element test microbolometer was fabricated based on the deposited thin film. The infrared response testing showed that the response was 200 mV. The obtained results allow us to conclude that the vanadium oxide thin films on SiO 2 buffer layers is suitable for uncooled focal plane arrays applications

  8. Electrophoretic deposition of PTFE particles on porous anodic aluminum oxide film and its tribological properties

    International Nuclear Information System (INIS)

    Zhang, Dongya; Dong, Guangneng; Chen, Yinjuan; Zeng, Qunfeng

    2014-01-01

    Polytetrafluoroethylene (PTFE) composite film was successfully fabricated by depositing PTFE particles into porous anodic aluminum oxide film using electrophoretic deposition (EPD) process. Firstly, porous anodic aluminum oxide film was synthesized by anodic oxidation process in sulphuric acid electrolyte. Then, PTFE particles in suspension were directionally deposited into the porous substrate. Finally, a heat treatment at 300 °C for 1 h was utilized to enhance PTFE particles adhesion to the substrate. The influence of anodic oxidation parameters on the morphology and micro-hardness of the porous anodic aluminum oxide film was studied and the PTFE particles deposited into the pores were authenticated using energy-dispersive spectrometer (EDS) and scanning electron microscopy (SEM). Tribological properties of the PTFE composite film were investigated under dry sliding. The experimental results showed that the composite film exhibit remarkable low friction. The composite film had friction coefficient of 0.20 which deposited in 15% PTFE emulsion at temperature of 15 °C and current density of 3 A/dm 2 for 35 min. In addition, a control specimen of porous anodic aluminum oxide film and the PTFE composite film were carried out under the same test condition, friction coefficient of the PTFE composite film was reduced by 60% comparing with the control specimen at 380 MPa and 100 mm/s. The lubricating mechanism was that PTFE particles embedded in porous anodic aluminum oxide film smeared a transfer film on the sliding path and the micro-pores could support the supplement of solid lubricant during the sliding, which prolonged the lubrication life of the aluminum alloys.

  9. Highly Sensitive and Fast Response Colorimetric Humidity Sensors Based on Graphene Oxides Film.

    Science.gov (United States)

    Chi, Hong; Liu, Yan Jun; Wang, FuKe; He, Chaobin

    2015-09-16

    Uniform graphene oxide (GO) film for optical humidity sensing was fabricated by dip-coating technique. The resulting GO thin film shows linear optical shifts in the visible range with increase of humidity in the whole relative humidity range (from dry state to 98%). Moreover, GO films exhibit ultrafast sensing to moisture within 250 ms because of the unique atomic thinness and superpermeability of GO sheets. The humidity sensing mechanism was investigated using XRD and computer simulation. The ultrasensitive humidity colorimetric properties of GOs film may enable many potential applications such as disposable humidity sensors for packaging, health, and environmental monitoring.

  10. Preparation of polyvinyl alcohol graphene oxide phosphonate film and research of thermal stability and mechanical properties.

    Science.gov (United States)

    Li, Jihui; Song, Yunna; Ma, Zheng; Li, Ning; Niu, Shuai; Li, Yongshen

    2018-05-01

    In this article, flake graphite, nitric acid, peroxyacetic acid and phosphoric acid are used to prepare graphene oxide phosphonic and phosphinic acids (GOPAs), and GOPAs and polyvinyl alcohol (PVA) are used to synthesize polyvinyl alcohol graphene oxide phosphonate and phosphinate (PVAGOPs) in the case of faint acidity and ultrasound irradiation, and PVAGOPs are used to fabricate PVAGOPs film, and the structure and morphology of GOPAs, PVAGOPs and PVAGOPs film are characterized, and the thermal stability and mechanical properties of PVAGOPs film are investigated. Based on these, it has been proved that GOPAs consist of graphene oxide phosphonic acid and graphene oxide phosphinic acid, and there are CP covalent bonds between them, and PVAGOPs are composed of GOPAs and PVA, and there are six-member lactone rings between GOPAs and PVA, and the thermal stability and mechanical properties of PVAGOPs film are improved effectively. Copyright © 2018 Elsevier B.V. All rights reserved.

  11. Fabrication of Graphene Oxide Dispersed DLC/PDMS Substrates and Human Mesenchymal Stem Cell Culture(Researches)

    OpenAIRE

    伴, 雅人; Masahito, Ban

    2016-01-01

    Graphene Oxide (GO) dispersed DLC (diamond-like carbon) thin film deposited PDMS substrates were fabricated with plasma treatments and dip coating methods. It was found from cell culture tests using the substrates as scaffolds human mesenchymal stem cells (hMSCs) indicated larger F-actin areas compared with the substrates without GO and/or DLC.

  12. Fabrication of Ultra-thin Color Films with Highly Absorbing Media Using Oblique Angle Deposition.

    Science.gov (United States)

    Yoo, Young Jin; Lee, Gil Ju; Jang, Kyung-In; Song, Young Min

    2017-08-29

    Ultra-thin film structures have been studied extensively for use as optical coatings, but performance and fabrication challenges remain.  We present an advanced method for fabricating ultra-thin color films with improved characteristics. The proposed process addresses several fabrication issues, including large area processing. Specifically, the protocol describes a process for fabricating ultra-thin color films using an electron beam evaporator for oblique angle deposition of germanium (Ge) and gold (Au) on silicon (Si) substrates.  Film porosity produced by the oblique angle deposition induces color changes in the ultra-thin film. The degree of color change depends on factors such as deposition angle and film thickness. Fabricated samples of the ultra-thin color films showed improved color tunability and color purity. In addition, the measured reflectance of the fabricated samples was converted into chromatic values and analyzed in terms of color. Our ultra-thin film fabricating method is expected to be used for various ultra-thin film applications such as flexible color electrodes, thin film solar cells, and optical filters. Also, the process developed here for analyzing the color of the fabricated samples is broadly useful for studying various color structures.

  13. Fabrication and characterization of differentiated aramid nanofibers and transparent films

    Science.gov (United States)

    Luo, Jingjing; Zhang, Meiyun; Yang, Bin; Liu, Guodong; Song, Shunxi

    2018-03-01

    Aramid nanofibers (ANFs) frequently are employed as versatile building blocks for constructing high-performance nanocomposites due to its structural and performance superiority. In this paper, the different ANFs and ANF films derived from the typical aramid yarns, chopped fiber, pulp fiber and fibrid fiber, respectively, were fabricated through deprotonation with potassium hydroxide in dimethyl sulphoxide, protonation with deionized water and vacuum-assisted filtration. The physical tests such as tensile test, ultraviolet transmittance and absorbance, thermogravimetric analysis were executed to evaluate and contrast the thermodynamic and optical performances of these differentiated ANFs and ANF films. The analytical results suggested that ANFs films prepared by the different forms of aramid macrofibers presented with differentiated properties such as mechanical behaviors, transparencies and flexibilities. And also it was found that the oversized nanofiber in length led to the formation of flocculation which was adverse for ANFs films in the formation of high strength. Whereas, small diameter just facilitated for the achievement of high stiffness and transparency. By contrast, the ANFs films made from chopped nanofiber, with aspect ratio of 200-500, exhibited good transparency, thermal stability and mechanical properties with transmittance value of 83%, TG10% around 521 °C, ultimate strength (σ) of 103.41 MPa, stiffness (E) of 4.70 GPa and strain at break of 5.56%. This work offers an alternative nanoscale building block as an effective nanofiller for preparing high-performance nanocomposites with different requirements in the potential fields such as transparent coating and flexible electrode or display materials, battery separator and microporous membrane.

  14. Fabrication of mixed oxide fuel using plutonium from dismantled weapons

    International Nuclear Information System (INIS)

    Blair, H.T.; Chidester, K.; Ramsey, K.B.

    1996-01-01

    A very brief summary is presented of experimental studies performed to support the use of plutonium from dismantled weapons in fabricating mixed oxide (MOX) fuel for commercial power reactors. Thermal treatment tests were performed on plutonium dioxide powder to determine if an effective dry gallium removal process could be devised. Fabrication tests were performed to determine the effects of various processing parameters on pellet quality. Thermal tests results showed that the final gallium content is highly dependent on the treatment temperature. Fabrication tests showed that the milling process, sintering parameters, and uranium feed did effect pellet properties. 1 ref., 1 tab

  15. Preparation of Aluminum Nanomesh Thin Films from an Anodic Aluminum Oxide Template as Transparent Conductive Electrodes

    Science.gov (United States)

    Li, Yiwen; Chen, Yulong; Qiu, Mingxia; Yu, Hongyu; Zhang, Xinhai; Sun, Xiao Wei; Chen, Rui

    2016-02-01

    We have employed anodic aluminum oxide as a template to prepare ultrathin, transparent, and conducting Al films with a unique nanomesh structure for transparent conductive electrodes. The anodic aluminum oxide template is obtained through direct anodization of a sputtered Al layer on a glass substrate, and subsequent wet etching creates the nanomesh metallic film. The optical and conductive properties are greatly influenced by experimental conditions. By tuning the anodizing time, transparent electrodes with appropriate optical transmittance and sheet resistance have been obtained. The results demonstrate that our proposed strategy can serve as a potential method to fabricate low-cost TCEs to replace conventional indium tin oxide materials.

  16. Correlation of nanostructure and charge transport properties of oxidized a -SiC:H films

    Energy Technology Data Exchange (ETDEWEB)

    Gordienko, S.O.; Nazarov, A.N.; Vasin, A.V.; Rusavsky, A.V.; Lysenko, V.S. [Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine, Prospekt Nauki 41, 03028 Kyiv (Ukraine)

    2012-06-15

    This paper considers the influence of low temperature oxidation on structural and electrical properties of amorphous carbon-rich a -Si{sub 1-x}C{sub x}:H thin films fabricated by reactive RF magnetron sputtering. It is shown that oxidation leads to formation of SiO{sub x} matrix with graphite-like carbon inclusions. Such conductive precipitates has a strong effect on charge transport in oxidized a -Si{sub 1-x}C{sub x}:H films (copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  17. Transparent conductive zinc oxide basics and applications in thin film solar cells

    CERN Document Server

    Klein, Andreas; Rech, Bernd

    2008-01-01

    Zinc oxide (ZnO) belongs to the class of transparent conducting oxides which can be used as transparent electrodes in electronic devices or heated windows. In this book the material properties of, the deposition technologies for, and applications of zinc oxide in thin film solar cells are described in a comprehensive manner. Structural, morphological, optical and electronic properties of ZnO are treated in this review. The editors and authors of this book are specialists in deposition, analysis and fabrication of thin-film solar cells and especially of ZnO. This book is intended as an overview and a data collection for students, engineers and scientist.

  18. Description of a reference mixed oxide fuel fabrication plant (MOFFP)

    International Nuclear Information System (INIS)

    1978-01-01

    In order to evaluate the environment impact, due to the Mixed Oxide Fuel Fabrication Plants, work has been initiated to describe the general design and operating conditions of a reference Mixed Oxide Fuel Fabrication Plant (MOFFP) for the 1990 time frame. The various reference data and basic assumptions for the reference MOFFP plant have been defined after discussion with experts. The data reported in this document are only made available to allow an evaluation of the environmental impact due to a reference MOFFP plant. These data have therefore not to be used as recommandation, standards, regulatory guides or requirements

  19. Characterization of Si:O:C:H films fabricated using electron emission enhanced chemical vapour deposition

    Energy Technology Data Exchange (ETDEWEB)

    Durrant, Steven F. [Laboratorio de Plasmas Tecnologicos, Campus Experimental de Sorocaba, Universidade Estadual Paulista-UNESP, Avenida Tres de Marco, 511, Alto da Boa Vista, 18087-180, Soracaba, SP (Brazil)], E-mail: steve@sorocaba.unesp.br; Rouxinol, Francisco P.M.; Gelamo, Rogerio V. [Instituto de Fisica Gleb Wataghin, Universidade Estadual de Campinas, 13083-970, Campinas, SP (Brazil); Trasferetti, B. Claudio [Present address: Superintendencia Regional da Policia Federal em Sao Paulo, Setor Tecnico-Cientifico, Rua Hugo d' Antola 95/10o Andar, Lapa de Baixo, 05038-090 Sao Paulo, SP (Brazil); Davanzo, C.U. [Instituto de Quimica, Universidade Estadual de Campinas, 13083-970, Campinas, SP (Brazil); Bica de Moraes, Mario A. [Instituto de Fisica Gleb Wataghin, Universidade Estadual de Campinas, 13083-970, Campinas, SP (Brazil)

    2008-01-15

    Silicon-based polymers and oxides may be formed when vapours of oxygen-containing organosilicone compounds are exposed to energetic electrons drawn from a hot filament by a bias potential applied to a second electrode in a controlled atmosphere in a vacuum chamber. As little deposition occurs in the absence of the bias potential, electron impact fragmentation is the key mechanism in film fabrication using electron-emission enhanced chemical vapour deposition (EEECVD). The feasibility of depositing amorphous hydrogenated carbon films also containing silicon from plasmas of tetramethylsilane or hexamethyldisiloxane has already been shown. In this work, we report the deposition of diverse films from plasmas of tetraethoxysilane (TEOS)-argon mixtures and the characterization of the materials obtained. The effects of changes in the substrate holder bias (V{sub S}) and of the proportion of TEOS in the mixture (X{sub T}) on the chemical structure of the films are examined by infrared-reflection absorption spectroscopy (IRRAS) at near-normal and oblique incidence using unpolarised and p-polarised, light, respectively. The latter is particularly useful in detecting vibrational modes not observed when using conventional near-normal incidence. Elemental analyses of the film were carried out by X-ray photoelectron spectroscopy (XPS), which was also useful in complementary structural investigations. In addition, the dependencies of the deposition rate on V{sub S} and X{sub T} are presented.

  20. Characterization of Si:O:C:H films fabricated using electron emission enhanced chemical vapour deposition

    International Nuclear Information System (INIS)

    Durrant, Steven F.; Rouxinol, Francisco P.M.; Gelamo, Rogerio V.; Trasferetti, B. Claudio; Davanzo, C.U.; Bica de Moraes, Mario A.

    2008-01-01

    Silicon-based polymers and oxides may be formed when vapours of oxygen-containing organosilicone compounds are exposed to energetic electrons drawn from a hot filament by a bias potential applied to a second electrode in a controlled atmosphere in a vacuum chamber. As little deposition occurs in the absence of the bias potential, electron impact fragmentation is the key mechanism in film fabrication using electron-emission enhanced chemical vapour deposition (EEECVD). The feasibility of depositing amorphous hydrogenated carbon films also containing silicon from plasmas of tetramethylsilane or hexamethyldisiloxane has already been shown. In this work, we report the deposition of diverse films from plasmas of tetraethoxysilane (TEOS)-argon mixtures and the characterization of the materials obtained. The effects of changes in the substrate holder bias (V S ) and of the proportion of TEOS in the mixture (X T ) on the chemical structure of the films are examined by infrared-reflection absorption spectroscopy (IRRAS) at near-normal and oblique incidence using unpolarised and p-polarised, light, respectively. The latter is particularly useful in detecting vibrational modes not observed when using conventional near-normal incidence. Elemental analyses of the film were carried out by X-ray photoelectron spectroscopy (XPS), which was also useful in complementary structural investigations. In addition, the dependencies of the deposition rate on V S and X T are presented

  1. Characteristics of indium zinc oxide films deposited using the facing targets sputtering method for OLEDs applications

    International Nuclear Information System (INIS)

    Rim, Y.S.; Kim, H.J.; Kim, K.H.

    2010-01-01

    The amorphous indium zinc oxide (IZO) thin films were deposited on polyethersulfone (PES) and glass substrates using the facing targets sputtering (FTS) system. The electrical, optical and structural properties of the IZO thin films deposited as functions of sputtering parameters on the glass and PES substrates. An optimal IZO deposition condition is fabricated for organic light-emitting device (OLED) based on glass and PES. The amorphous IZO anode-based OLEDs show superior current density and luminance characteristics.

  2. Fabrication of amorphous IGZO thin film transistor using self-aligned imprint lithography with a sacrificial layer

    Science.gov (United States)

    Kim, Sung Jin; Kim, Hyung Tae; Choi, Jong Hoon; Chung, Ho Kyoon; Cho, Sung Min

    2018-04-01

    An amorphous indium-gallium-zinc-oxide (a-IGZO) thin film transistor (TFT) was fabricated by a self-aligned imprint lithography (SAIL) method with a sacrificial photoresist layer. The SAIL is a top-down method to fabricate a TFT using a three-dimensional multilayer etch mask having all pattern information for the TFT. The sacrificial layer was applied in the SAIL process for the purpose of removing the resin residues that were inevitably left when the etch mask was thinned by plasma etching. This work demonstrated that the a-IGZO TFT could be fabricated by the SAIL process with the sacrificial layer. Specifically, the simple fabrication process utilized in this study can be utilized for the TFT with a plasma-sensitive semiconductor such as the a-IGZO and further extended for the roll-to-roll TFT fabrication.

  3. Superhydrophobic transparent films from silica powder: Comparison of fabrication methods

    KAUST Repository

    Liu, Li-Der; Lin, Chao-Sung; Tikekar, Mukul; Chen, Ping-Hei

    2011-01-01

    The lotus leaf is known for its self-clean, superhydrophobic surface, which displays a hierarchical structure covered with a thin wax-like material. In this study, three fabrication techniques, using silicon dioxide particles to create surface roughness followed by a surface modification with a film of polydimethylsiloxane, were applied on a transparent glass substrate. The fabrication techniques differed mainly on the deposition of silicon dioxide particles, which included organic, inorganic, and physical methods. Each technique was used to coat three samples of varying particle load. The surface of each sample was evaluated with contact angle goniometer and optical spectrometer. Results confirmed the inverse relationships between contact angle and optical transmissivity independent of fabrication techniques. Microstructural morphologies also suggested the advantage of physical deposition over chemical methods. In summary, the direct sintering method proved outstanding for its contact angle vs transmissivity efficiency, and capable of generating a contact angle as high as 174°. © 2011 Elsevier B.V. All rights reserved.

  4. Superhydrophobic transparent films from silica powder: Comparison of fabrication methods

    KAUST Repository

    Liu, Li-Der

    2011-07-01

    The lotus leaf is known for its self-clean, superhydrophobic surface, which displays a hierarchical structure covered with a thin wax-like material. In this study, three fabrication techniques, using silicon dioxide particles to create surface roughness followed by a surface modification with a film of polydimethylsiloxane, were applied on a transparent glass substrate. The fabrication techniques differed mainly on the deposition of silicon dioxide particles, which included organic, inorganic, and physical methods. Each technique was used to coat three samples of varying particle load. The surface of each sample was evaluated with contact angle goniometer and optical spectrometer. Results confirmed the inverse relationships between contact angle and optical transmissivity independent of fabrication techniques. Microstructural morphologies also suggested the advantage of physical deposition over chemical methods. In summary, the direct sintering method proved outstanding for its contact angle vs transmissivity efficiency, and capable of generating a contact angle as high as 174°. © 2011 Elsevier B.V. All rights reserved.

  5. Fabrication of porous anodic alumina films by using two-step anodization process

    International Nuclear Information System (INIS)

    Xu Zhan; Zhou Bin; Xu Xiang; Wang Xiaoli; Wu Di; Shen Jun

    2006-01-01

    This article introduces the fabrication of the porous anodic alumina films which have ordered pore arrangement by using a two-step anodization process. The films have a parallel channel structure which nanopore diameter can be 20-100 nm, and depth can reach 50 μm. The change of pore structure in the first and second anodization, moving the alumina layer, widening process was analysed. The effect of the parameters such as different electrolytes, anodization temperature and the voltage on the nanopore structure was studied. The surface and profile structure through FE-SEM (field emission scanning electron microscope), the element composition in tiny area of the anodic aluminum oxide (AAO) surface were studied. The result indicates the pore diameter of AAO which is anodized in oxalic acid solution is larger than which anodized in sulfuric acid solution. The anodization temperature and voltage can enlarge the nanopore diameter of AAO in a range. (authors)

  6. Oxide films on magnesium and magnesium alloys

    International Nuclear Information System (INIS)

    Shih, T.-S.; Liu, J.-B.; Wei, P.-S.

    2007-01-01

    Magnesium alloys are very active and readily ignite during heating and melting. In this study, we discuss the combustion of magnesium and magnesium alloys and propose prospective anti-ignition mechanisms for magnesium alloys during the heating process. When magnesium and magnesium alloys were heated in air, the sample surfaces produced layers of thermally formed oxides. These thermally formed oxides played an important role in affecting the combustion of the magnesium and magnesium alloys. When magnesium was heated in air, brucite that formed in the early stage was then transformed into periclase by dehydroxylation. By extending the heating time, more periclase formed and increased in thickness which was associated with microcracks formation. When magnesium was heated in a protective atmosphere (SF 6 ), a film of MgF 2 formed at the interface between the oxide layer and the Mg substrate. This film generated an anti-ignition behavior which protected the substrate from oxidation. When solution-treated AZ80 alloy was heated, spinel developed at the interface between the thermally formed oxide layer and the Mg substrate, improving the anti-ignition properties of the substrate. In addition, we also explain the effects of beryllium in an AZB91 alloy on the ignition-proofing behavior

  7. Metallic oxide switches using thick film technology

    Science.gov (United States)

    Patel, D. N.; Williams, L., Jr.

    1974-01-01

    Metallic oxide thick film switches were processed on alumina substrates using thick film technology. Vanadium pentoxide in powder form was mixed with other oxides e.g., barium, strontium copper and glass frit, ground to a fine powder. Pastes and screen printable inks were made using commercial conductive vehicles and appropriate thinners. Some switching devices were processed by conventional screen printing and firing of the inks and commercial cermet conductor terminals on 96% alumina substrates while others were made by applying small beads or dots of the pastes between platinum wires. Static, and dynamic volt-ampere, and pulse tests indicate that the switching and self-oscillatory characteristics of these devices could make them useful in memory element, oscillator, and automatic control applications.

  8. Nanostructured antistatic and antireflective thin films made of indium tin oxide and silica over-coat layer

    Science.gov (United States)

    Cho, Young-Sang; Hong, Jeong-Jin; Yang, Seung-Man; Choi, Chul-Jin

    2010-08-01

    Stable dispersion of colloidal indium tin oxide nanoparticles was prepared by using indium tin oxide nanopowder, organic solvent, and suitable dispersants through attrition process. Various comminution parameters during the attrition step were studied to optimize the process for the stable dispersion of indium tin oxide sol. The transparent and conductive films were fabricated on glass substrate using the indium tin oxide sol by spin coating process. To obtain antireflective function, partially hydrolyzed alkyl silicate was deposited as over-coat layer on the pre-fabricated indium tin oxide film by spin coating technique. This double-layered structure of the nanostructured film was characterized by measuring the surface resistance and reflectance spectrum in the visible wavelength region. The final film structure was enough to satisfy the TCO regulations for EMI shielding purposes.

  9. Chemically abrupt interface between Ce oxide and Fe films

    International Nuclear Information System (INIS)

    Lee, H.G.; Lee, D.; Kim, S.; Kim, S.G.; Hwang, Chanyong

    2005-01-01

    A chemically abrupt Fe/Ce oxide interface can be formed by initial oxidation of an Fe film followed by deposition of Ce metal. Once a Ce oxide layer is formed on top of Fe, it acts a passivation barrier for oxygen diffusion. Further deposition of Ce metal followed by its oxidation preserve the abrupt interface between Ce oxide and Fe films. The Fe and Ce oxidation states have been monitored at each stage using X-ray photoelectron spectroscopy

  10. Fabrication and electrochemical capacitance of hierarchical graphene/polyaniline/carbon nanotube ternary composite film

    International Nuclear Information System (INIS)

    Lu Xiangjun; Dou Hui; Yang Sudong; Hao Liang; Zhang Luojiang; Shen Laifa; Zhang Fang; Zhang Xiaogang

    2011-01-01

    Graphical abstract: A hierarchical film with coaxial polyaniline/carbon nanotube (PANI/CNT) nanocables uniformly sandwiched between graphene (GN) sheets was prepared by filtration of the complex dispersion of graphite oxide (GO) and PANI/CNT. Highlights: → A film composed of GN sheets, PANI and CNTs was fabricated. → The coaxial PANI/CNT nanocables uniformly sandwiched between the GN sheets. → The unique structure facilitates contact between electrolyte and electrode materials. → Each component provides unique function to achieve superior electrochemical properties. - Abstract: A film composed of graphene (GN) sheets, polyaniline (PANI) and carbon nanotubes (CNTs) has been fabricated by reducing a graphite oxide (GO)/PANI/CNT precursor prepared by flow-directed assembly from a complex dispersion of GO and PANI/CNT, followed by reoxidation and redoping of the reduced PANI in the composite to restore the conducting PANI structure. Scanning electron microscope images indicate that the ternary composite film is a layered structure with coaxial PANI/CNT nanocables uniformly sandwiched between the GN sheets. Such novel hierarchical structure with high electrical conductivity perfectly facilitates contact between electrolyte ions and PANI for faradaic energy storage and efficiently utilizes the double-layer capacitance at the electrode-electrolyte interfaces. The specific capacitance of the GN/PANI/CNT estimated by galvanostatic charge/discharge measurement is 569 F g -1 (or 188 F cm -3 for volumetric capacitance) at a current density of 0.1 A g -1 . In addition, the GN/PANI/CNT exhibits good rate capability (60% capacity retention at 10 A g -1 ) and superior cycling stability (4% fade after 5000 continuous charge/discharge cycles).

  11. Highly conductive grain boundaries in copper oxide thin films

    Energy Technology Data Exchange (ETDEWEB)

    Deuermeier, Jonas, E-mail: j.deuermeier@campus.fct.unl.pt [Department of Materials Science, Faculty of Science and Technology, i3N/CENIMAT, Universidade NOVA de Lisboa and CEMOP/UNINOVA, Campus de Caparica, 2829-516 Caparica (Portugal); Department of Materials and Earth Sciences, Technische Universität Darmstadt, Jovanka-Bontschits-Straße 2, D-64287 Darmstadt (Germany); Wardenga, Hans F.; Morasch, Jan; Siol, Sebastian; Klein, Andreas, E-mail: aklein@surface.tu-darmstadt.de [Department of Materials and Earth Sciences, Technische Universität Darmstadt, Jovanka-Bontschits-Straße 2, D-64287 Darmstadt (Germany); Nandy, Suman; Calmeiro, Tomás; Martins, Rodrigo; Fortunato, Elvira [Department of Materials Science, Faculty of Science and Technology, i3N/CENIMAT, Universidade NOVA de Lisboa and CEMOP/UNINOVA, Campus de Caparica, 2829-516 Caparica (Portugal)

    2016-06-21

    High conductivity in the off-state and low field-effect mobility compared to bulk properties is widely observed in the p-type thin-film transistors of Cu{sub 2}O, especially when processed at moderate temperature. This work presents results from in situ conductance measurements at thicknesses from sub-nm to around 250 nm with parallel X-ray photoelectron spectroscopy. An enhanced conductivity at low thickness is explained by the occurrence of Cu(II), which is segregated in the grain boundary and locally causes a conductivity similar to CuO, although the surface of the thick film has Cu{sub 2}O stoichiometry. Since grains grow with an increasing film thickness, the effect of an apparent oxygen excess is most pronounced in vicinity to the substrate interface. Electrical properties of Cu{sub 2}O grains are at least partially short-circuited by this effect. The study focuses on properties inherent to copper oxide, although interface effects cannot be ruled out. This non-destructive, bottom-up analysis reveals phenomena which are commonly not observable after device fabrication, but clearly dominate electrical properties of polycrystalline thin films.

  12. Preparation of reduced graphene oxide/gelatin composite films with reinforced mechanical strength

    International Nuclear Information System (INIS)

    Wang, Wenchao; Wang, Zhipeng; Liu, Yu; Li, Nan; Wang, Wei; Gao, Jianping

    2012-01-01

    Highlights: ► We used and compared different proportion of gelatin and chitosan as reducing agents. ► The mechanical properties of the films are investigated, especially the wet films. ► The cell toxicity of the composite films as biomaterial is carried out. ► The water absorption capabilities of the composite films also studied. -- Abstract: Graphene oxide (GO) was reduced by chitosan/gelatin solution and added to gelatin (Gel) to fabricate reduced graphene oxide/gelatin (RGO/Gel) films by a solvent-casting method using genipin as cross-linking agent. The structure and properties of the films were characterized by scanning electron microscopy (SEM), X-ray powder diffraction (XRD), thermogravimetric analysis (TGA) and UV–vis spectroscopy. The addition of RGO increased the tensile strength of the RGO/Gel films in both dry and wet states, but decreased their elongation at break. The incorperation of RGO also decreased the swelling ability of the films in water. Cell cultures were carried out in order to test the cytotoxicity of the films. The cells grew and reproduced well on the RGO/Gel films, indicating that the addition of RGO has no negative effect on the compatibility of the gelatin. Therefore, the reduced graphene oxide/gelatin composite is a promising biomaterial with excellent mechanical properties and good cell compatibility.

  13. Fabrication and Optoelectrical Properties of IZO/Cu2O Heterostructure Solar Cells by Thermal Oxidation

    Directory of Open Access Journals (Sweden)

    Cheng-Chiang Chen

    2012-01-01

    Full Text Available Indium zinc oxide (IZO/cupper oxide (Cu2O is a nontoxic nature and an attractive all-oxide candidate for low-cost photovoltaic (PV applications. The present paper reports on the fabrication of IZO/Cu2O heterostructure solar cells which the Cu2O layers were prepared by oxidation of Cu thin films deposited on glass substrate. The measured parameters of cells were the short-circuit current (Isc, the open-circuit voltage (Voc, the maximum output power (Pm, the fill factor (FF, and the efficiency (η, which had values of 0.11 mA, 0.136 V, 5.05 μW, 0.338, and 0.56%, respectively, under AM 1.5 illumination.

  14. Design, fabrication, and characterization of electroless Ni–P alloy films for micro heating devices

    International Nuclear Information System (INIS)

    Liu, Bernard Haochih; Liao, Fang-Yi; Chen, Jian-Hong

    2013-01-01

    In this work electroless nickel–phosphorous coatings were used as the micro heaters for scanning thermal microscopy. The deposition of Ni–P alloys not only simplified the microelectromechanical system fabrication steps but also provided flexibility in the tuning of the resistance of the heating elements. Ni–P films were plated on patterned silicon substrates and silicon with a silicon nitride film. The pre-deposition reactive ion etch (RIE) treatment caused a change in surface roughness that enhanced the adhesion of Ni–P coatings. Optimization of RIE parameters and pH values could achieve selective deposition of Ni–P, thus helped the lift-off of a serpentine circuit pattern. The chemical composition and microstructure of Ni–P films affect the electrical properties of micro heaters. Energy-dispersive X-ray spectroscopy identified the Ni–P composition and confirmed its insignificant level of oxidation. The high-temperature X-ray diffraction indicated that the as-deposited film was crystalline Ni, which later transformed into Ni 3 P at higher temperature. The resistivity of Ni–P films was tailored between 10 −5 and 10 −7 Ω m via a post-deposition annealing, which also obtained a stable temperature coefficient of resistance. Consequently, the performance of micro heaters could be designed with a high degree of flexibility. - Highlights: • We developed a process to fabricate micro heater by Ni–P electroless plating. • Reactive ion etch caused oscillating surface roughness and affected Ni–P adhesion. • Ni 3 P phase precipitates during annealing and reduces resistivity of Ni–P alloys. • Resistivity of Ni–P is tunable from 10 −5 to 10 −7 Ω m by plating and annealing

  15. Design, fabrication, and characterization of electroless Ni–P alloy films for micro heating devices

    Energy Technology Data Exchange (ETDEWEB)

    Liu, Bernard Haochih, E-mail: hcliu@mail.ncku.edu.tw [Department of Materials Science and Engineering, National Cheng Kung University, Taiwan (China); Promotion Center for Global Materials Research, National Cheng Kung University, Taiwan (China); Research Center for Energy Technology and Strategy, National Cheng Kung University, Taiwan (China); Liao, Fang-Yi; Chen, Jian-Hong [Department of Materials Science and Engineering, National Cheng Kung University, Taiwan (China)

    2013-06-30

    In this work electroless nickel–phosphorous coatings were used as the micro heaters for scanning thermal microscopy. The deposition of Ni–P alloys not only simplified the microelectromechanical system fabrication steps but also provided flexibility in the tuning of the resistance of the heating elements. Ni–P films were plated on patterned silicon substrates and silicon with a silicon nitride film. The pre-deposition reactive ion etch (RIE) treatment caused a change in surface roughness that enhanced the adhesion of Ni–P coatings. Optimization of RIE parameters and pH values could achieve selective deposition of Ni–P, thus helped the lift-off of a serpentine circuit pattern. The chemical composition and microstructure of Ni–P films affect the electrical properties of micro heaters. Energy-dispersive X-ray spectroscopy identified the Ni–P composition and confirmed its insignificant level of oxidation. The high-temperature X-ray diffraction indicated that the as-deposited film was crystalline Ni, which later transformed into Ni{sub 3}P at higher temperature. The resistivity of Ni–P films was tailored between 10{sup −5} and 10{sup −7} Ω m via a post-deposition annealing, which also obtained a stable temperature coefficient of resistance. Consequently, the performance of micro heaters could be designed with a high degree of flexibility. - Highlights: • We developed a process to fabricate micro heater by Ni–P electroless plating. • Reactive ion etch caused oscillating surface roughness and affected Ni–P adhesion. • Ni{sub 3}P phase precipitates during annealing and reduces resistivity of Ni–P alloys. • Resistivity of Ni–P is tunable from 10{sup −5} to 10{sup −7} Ω m by plating and annealing.

  16. Multifunctional surface modification of silk fabric via graphene oxide repeatedly coating and chemical reduction method

    Science.gov (United States)

    Cao, Jiliang; Wang, Chaoxia

    2017-05-01

    Multifunctional silk fabrics with electrical conductive, anti-ultraviolet and water repellent were successfully prepared by surface modification with graphene oxide (GO). The yellow-brown GO deposited on the surface of silk fabric was converted into graphitic black reduced graphene (RGO) by sodium hydrosulfite. The surface properties of silk fabrics were changed by repeatedly RGO coating process, which have been proved by SEM and XPS. The SEM results showed that the RGO sheets were successive form a continuously thin film on the surface of silk fabrics, and the deposition of GO or RGO also can be proved by XPS. The electrical conductivity was tested by electrical surface resistance value of the silk fabric, the surface resistance decreased with increasing of RGO surface modification times, and a low surface resistance value reached to 3.24 KΩ cm-1 after 9 times of modification, indicating the silk obtained excellent conductivity. The UPF value of one time GO modification silk fabric (silk-1RGO) was enhanced significantly to 24.45 in comparison to 10.40 of original silk. The contact angle of RGO coating silk samples was all above of 120°. The durability of RGO coated silk fabrics was tested by laundering. The electrical surface resistance of silk-4RGO (65.74 KΩ cm-1), silk-6RGO (15.54 KΩ cm-1) and silk-8RGO (3.86 KΩ cm-1) fabrics was up to 86.82, 22.30 and 6.57 KΩ cm-1 after 10 times of standard washing, respectively. The UPF value, contact angle and color differences of RGO modified silk fabric slightly changed before and after 10 times of standard washing. Therefore, the washing fastness of electric conduction, anti-ultraviolet and water repellent multifunctional silk fabrics was excellent.

  17. Investigation of ferromagnetism in oxygen deficient hafnium oxide thin films

    Energy Technology Data Exchange (ETDEWEB)

    Hildebrandt, Erwin; Kurian, Jose; Krockenberger, Yoshiharu; Alff, Lambert [Institut fuer Materialwissenschaft, TU Darmstadt (Germany); Suter, Andreas [PSI, Villingen (Switzerland); Wilhelm, Fabrice; Rogalev, Andrei [ESRF, Grenoble (France)

    2008-07-01

    Oxygen deficient thin films of hafnium oxide were grown on single crystal r-cut and c-cut sapphire by reactive molecular beam epitaxy. RF-activated oxygen was used for the in situ oxidation of hafnium oxide thin films. Oxidation conditions were varied substantially in order to create oxygen deficiency in hafnium oxide films intentionally. The films were characterized by X-ray and magnetic measurements. X-ray diffraction studies show an increase in lattice parameter with increasing oxygen deficiency. Oxygen deficient hafnium oxide thin films also showed a decreasing bandgap with increase in oxygen deficiency. The magnetisation studies carried out with SQUID did not show any sign of ferromagnetism in the whole oxygen deficiency range. X-ray magnetic circular dichroism measurements also confirmed the absence of ferromagnetism in oxygen deficient hafnium oxide thin films.

  18. Graphene oxide decorated electrospun gelatin nanofibers: Fabrication, properties and applications

    Energy Technology Data Exchange (ETDEWEB)

    Jalaja, K. [Department of Chemistry, Indian Institute of Space Science and Technology, Valiamala, Thiruvananthapuram, Kerala 695 547 (India); Sreehari, V.S. [Indian Institute of Science Education and Research Bhopal, Bhauri, Madhya Pradesh 462066 (India); Kumar, P.R. Anil [Tissue culture laboratory, Biomedical Technology Wing, Sree Chitra Tirunal Institute for Medical Sciences and Technology, Poojappura, Thiruvananthapuram, Kerala 695 012 (India); Nirmala, R. James, E-mail: nirmala@iist.ac.in [Department of Chemistry, Indian Institute of Space Science and Technology, Valiamala, Thiruvananthapuram, Kerala 695 547 (India)

    2016-07-01

    Gelatin nanofiber fabricated by electrospinning process is found to mimic the complex structural and functional properties of natural extracellular matrix for tissue regeneration. In order to improve the physico-chemical and biological properties of the nanofibers, graphene oxide is incorporated in the gelatin to form graphene oxide decorated gelatin nanofibers. The current research effort is focussed on the fabrication and evaluation of physico-chemical and biological properties of graphene oxide-gelatin composite nanofibers. The presence of graphene oxide in the nanofibers was established by transmission electron microscopy (TEM). We report the effect of incorporation of graphene oxide on the mechanical, thermal and biological performance of the gelatin nanofibers. The tensile strength of gelatin nanofibers was increased from 8.29 ± 0.53 MPa to 21 ± 2.03 MPa after the incorporation of GO. In order to improve the water resistance of nanofibers, natural based cross-linking agent, namely, dextran aldehyde was employed. The cross-linked composite nanofibers showed further increase in the tensile strength up to 56.4 ± 2.03 MPa. Graphene oxide incorporated gelatin nanofibers are evaluated for bacterial activity against gram positive (Staphylococcus aureus) and gram negative (Escherichia coli) bacteria and cyto compatibility using mouse fibroblast cells (L-929 cells). The results indicate that the graphene oxide incorporated gelatin nanofibers do not prevent bacterial growth, nevertheless support the L-929 cell adhesion and proliferation. - Highlights: • Graphene oxide nano reinforced gelatin nanofibers are fabricated by electrospinning. • Graphene oxide (0.5%) loading resulted in increased tensile strength. • GO/gelatin nanofibers are cross-linked with dextran aldehyde. • Composite nanofibers favoured adhesion of L-929 cells. • GO/gelatin mats do not prevent bacterial growth.

  19. Alkali semi-metal films and method and apparatus for fabricating them

    Energy Technology Data Exchange (ETDEWEB)

    Bhandari, Harish B.; Nagarkar, Vivek V.; Ovechkina, Olena E.; Frisch, Henry J.; Attenkofer, Klaus; Smedley, John M.

    2018-03-13

    Methods and systems for fabricating a film, such as, for example, a photocathode, having a tailored band structure and thin-film components that can be tailored for specific applications, such as, for example photocathode having a high quantum efficiency, and simple components fabricated by those methods.

  20. A novel electrode surface fabricated by directly attaching gold nanoparticles onto NH2+ ions implanted-indium tin oxide substrate

    International Nuclear Information System (INIS)

    Liu Chenyao; Jiao Jiao; Chen Qunxia; Xia Ji; Li Shuoqi; Hu Jingbo; Li Qilong

    2010-01-01

    A new type of gold nanoparticle attached to a NH 2 + ion implanted-indium tin oxide surface was fabricated without using peculiar binder molecules, such as 3-(aminopropyl)-trimethoxysilane. A NH 2 /indium tin oxide film was obtained by implantation at an energy of 80 keV with a fluence of 5 x 10 15 ions/cm 2 . The gold nanoparticle-modified film was characterized by X-ray photoelectron spectroscopy, scanning electron microscopy and electrochemical techniques and compared with a modified bare indium tin oxide surface and 3-(aminopropyl)-trimethoxysilane linked surface, which exhibited a relatively low electron transfer resistance and high electrocatalytic activity. The results demonstrate that NH 2 + ion implanted-indium tin oxide films can provide an important route to immobilize nanoparticles, which is attractive in developing new biomaterials.

  1. Fabrication and characterization of ovalbumin films for wound dressing applications

    International Nuclear Information System (INIS)

    Shojaee, Mozhgan; Navaee, Fatemeh; Jalili–Firoozinezhad, Sasan; Faturechi, Rahim; Majidi, Mohammad; Bonakdar, Shahin

    2015-01-01

    A great number of people suffer from burning injuries all around the world each year. Applying an appropriate wound dressing can promote new tissue formation, prevent losing water and inhibit invasion of infectious organisms. In this study, egg white with a long standing history, as a homemade remedy, was fabricated as a wound dressing for burn injuries. For this reason, ovalbumin films were cross-linked by 1-ethyl-3-3-dimethyl aminopropyl carbodiimide hydrochloride (EDC) with different concentrations (1, 5 and 10 mM) using three concentrations of ethanol. Physical–chemical characterizations including Fourier transform infrared spectroscopy (FTIR), gas transmission rate (GTR), tensile mechanical tests, water uptake and degradation rate were performed on the samples. The sample with 5 mM crosslinking agent at 70% ethanol was considered as the optimized one with 417 kPa of ultimate tensile strength, 64% elongation at break and 230% water uptake. In addition, biological evaluations conducted by MTT and live/dead assay indicated no sign of cyto-toxicity for all the samples. Moreover, scanning electron microscopy (SEM) showed that the fibroblast cells were well spread on the sample with the formation of filopodia. In conclusion, modified ovalbumin can be applied as the base material for fabrication of wound dressing and skin care products. - Highlights: • Ovalbumin films were cross-linked by EDC with different concentrations. • Physical–chemical characterizations were performed on the samples. • Biological evaluations indicated no sign of cyto-toxicity for all the samples. • The optimized sample was considered with 5 mM crosslinking agent at 70% ethanol. • Modified ovalbumin can be applied as wound dressings and skin care products

  2. Fabrication and characterization of ovalbumin films for wound dressing applications

    Energy Technology Data Exchange (ETDEWEB)

    Shojaee, Mozhgan; Navaee, Fatemeh [Faculty of Biomedical Engineering, Amirkabir University of Technology, Tehran (Iran, Islamic Republic of); Jalili–Firoozinezhad, Sasan [Faculty of Biomedical Engineering, Amirkabir University of Technology, Tehran (Iran, Islamic Republic of); Departments of Biomedicine and Surgery, University Hospital Basel, University of Basel, 4031 Basel (Switzerland); Faturechi, Rahim [Faculty of Biomedical Engineering, Amirkabir University of Technology, Tehran (Iran, Islamic Republic of); Majidi, Mohammad [National Cell Bank of Iran, Pasteur Institute of Iran, Tehran (Iran, Islamic Republic of); Bonakdar, Shahin, E-mail: sh_bonakdar@pasteur.ac.ir [National Cell Bank of Iran, Pasteur Institute of Iran, Tehran (Iran, Islamic Republic of)

    2015-03-01

    A great number of people suffer from burning injuries all around the world each year. Applying an appropriate wound dressing can promote new tissue formation, prevent losing water and inhibit invasion of infectious organisms. In this study, egg white with a long standing history, as a homemade remedy, was fabricated as a wound dressing for burn injuries. For this reason, ovalbumin films were cross-linked by 1-ethyl-3-3-dimethyl aminopropyl carbodiimide hydrochloride (EDC) with different concentrations (1, 5 and 10 mM) using three concentrations of ethanol. Physical–chemical characterizations including Fourier transform infrared spectroscopy (FTIR), gas transmission rate (GTR), tensile mechanical tests, water uptake and degradation rate were performed on the samples. The sample with 5 mM crosslinking agent at 70% ethanol was considered as the optimized one with 417 kPa of ultimate tensile strength, 64% elongation at break and 230% water uptake. In addition, biological evaluations conducted by MTT and live/dead assay indicated no sign of cyto-toxicity for all the samples. Moreover, scanning electron microscopy (SEM) showed that the fibroblast cells were well spread on the sample with the formation of filopodia. In conclusion, modified ovalbumin can be applied as the base material for fabrication of wound dressing and skin care products. - Highlights: • Ovalbumin films were cross-linked by EDC with different concentrations. • Physical–chemical characterizations were performed on the samples. • Biological evaluations indicated no sign of cyto-toxicity for all the samples. • The optimized sample was considered with 5 mM crosslinking agent at 70% ethanol. • Modified ovalbumin can be applied as wound dressings and skin care products.

  3. Ferroelectric BaTiO3 thin films on Ti substrate fabricated using pulsed-laser deposition.

    Science.gov (United States)

    He, J; Jiang, J C; Liu, J; Collins, G; Chen, C L; Lin, B; Giurgiutiu, V; Guo, R Y; Bhalla, A; Meletis, E I

    2010-09-01

    We report on the fabrication of ferroelectric BaTiO3 thin films on titanium substrates using pulsed laser deposition and their microstructures and properties. Electron microscopy studies reveal that BaTiO3 films are composed of crystalline assemblage of nanopillars with average cross sections from 100 nm to 200 nm. The BaTiO3 films have good interface structures and strong adhesion with respect to Ti substrates by forming a rutile TiO2 intermediate layer with a gradient microstructure. The room temperature ferroelectric polarization measurements show that the as-deposited BTO films possess nearly the same spontaneous polarization as the bulk BTO ceramics indicating formation of ferroelectric domains in the films. Successful fabrication of such ferroelectric films on Ti has significant importance for the development of new applications such as structural health monitoring spanning from aerospace to civil infrastructure. The work can be extended to integrate other ferroelectric oxide films with various promising properties to monitor the structural health of materials.

  4. Development of techniques for fabrication of film probe sensor assembly

    International Nuclear Information System (INIS)

    Moorhead, A.J.

    1982-10-01

    Pulsed laser welding and brazing techniques were developed for fabrication of sensors designed to measure liquid film properties in out-of-reactor safety tests that simulate a loss-of-coolant accident in a pressurized-water nuclear reactor. These sensors were made possible by a unique ceramic-to-metal seal system based on a cermet insulator and a brazing filler metal, both developed at ORNL. This seal system was shown to resist steam to an exposure of at least 100 h at 700 0 C (1292 0 F) and to resist repetitive thermal transients of 300 0 C/s (540 0 F). Procedures were also developed for induction brazing the instrumentation cables to a stainless steel end cap and for laser welding this component to the brazed sensor body itself. Cable end seals and sensor bodies fabricated with these designs and techniques maintained excellent helium leaktightness ( -6 cm 3 /s) after 20 severe thermal shock tests from 500 0 C air into water at 80 0 C

  5. Deposition and characterisation of epitaxial oxide thin films for SOFCs

    KAUST Repository

    Santiso, José ; Burriel, Mó nica

    2010-01-01

    This paper reviews the recent advances in the use of thin films, mostly epitaxial, for fundamental studies of materials for solid oxide fuel cell (SOFC) applications. These studies include the influence of film microstructure, crystal orientation

  6. Direct-current substrate bias effects on amorphous silicon sputter-deposited films for thin film transistor fabrication

    International Nuclear Information System (INIS)

    Jun, Seung-Ik; Rack, Philip D.; McKnight, Timothy E.; Melechko, Anatoli V.; Simpson, Michael L.

    2005-01-01

    The effect that direct current (dc) substrate bias has on radio frequency-sputter-deposited amorphous silicon (a-Si) films has been investigated. The substrate bias produces a denser a-Si film with fewer defects compared to unbiased films. The reduced number of defects results in a higher resistivity because defect-mediated conduction paths are reduced. Thin film transistors (TFTs) that were completely sputter deposited were fabricated and characterized. The TFT with the biased a-Si film showed lower leakage (off-state) current, higher on/off current ratio, and higher transconductance (field effect mobility) than the TFT with the unbiased a-Si film

  7. Fabrication and Characterization of N-Type Zinc Oxide/P-Type Boron Doped Diamond Heterojunction

    Science.gov (United States)

    Marton, Marián; Mikolášek, Miroslav; Bruncko, Jaroslav; Novotný, Ivan; Ižák, Tibor; Vojs, Marian; Kozak, Halyna; Varga, Marián; Artemenko, Anna; Kromka, Alexander

    2015-09-01

    Diamond and ZnO are very promising wide-bandgap materials for electronic, photovoltaic and sensor applications because of their excellent electrical, optical, physical and electrochemical properties and biocompatibility. In this contribution we show that the combination of these two materials opens up the potential for fabrication of bipolar heterojunctions. Semiconducting boron doped diamond (BDD) thin films were grown on Si and UV grade silica glass substrates by HFCVD method with various boron concentration in the gas mixture. Doped zinc oxide (ZnO:Al, ZnO:Ge) thin layers were deposited by diode sputtering and pulsed lased deposition as the second semiconducting layer on the diamond films. The amount of dopants within the films was varied to obtain optimal semiconducting properties to form a bipolar p-n junction. Finally, different ZnO/BDD heterostructures were prepared and analyzed. Raman spectroscopy, SEM, Hall constant and I-V measurements were used to investigate the quality, structural and electrical properties of deposited heterostructures, respectively. I-V measurements of ZnO/BDD diodes show a rectifying ratio of 55 at ±4 V. We found that only very low dopant concentrations for both semiconducting materials enabled us to fabricate a functional p-n junction. Obtained results are promising for fabrication of optically transparent ZnO/BDD bipolar heterojunction.

  8. Screen-printed Tin-doped indium oxide (ITO) films for NH3 gas sensing

    International Nuclear Information System (INIS)

    Mbarek, Hedia; Saadoun, Moncef; Bessais, Brahim

    2006-01-01

    Gas sensors using metal oxides have several advantageous features such as simplicity in device structure and low cost fabrication. In this work, Tin-doped indium oxide (ITO) films were prepared by the screen printing technique onto glass substrates. The granular and porous structure of screen-printed ITO are suitable for its use in gas sensing devices. The resistance of the ITO films was found to be strongly dependent on working temperatures and the nature and concentration of the ambient gases. We show that screen-printed ITO films have good sensing properties toward NH 3 vapours. The observed behaviors are explained basing on the oxidizing or the reducer nature of the gaseous species that react on the surface of the heated semi-conducting oxide

  9. Iron Oxide Films Prepared by Rapid Thermal Processing for Solar Energy Conversion.

    Science.gov (United States)

    Wickman, B; Bastos Fanta, A; Burrows, A; Hellman, A; Wagner, J B; Iandolo, B

    2017-01-16

    Hematite is a promising and extensively investigated material for various photoelectrochemical (PEC) processes for energy conversion and storage, in particular for oxidation reactions. Thermal treatments during synthesis of hematite are found to affect the performance of hematite electrodes considerably. Herein, we present hematite thin films fabricated via one-step oxidation of Fe by rapid thermal processing (RTP). In particular, we investigate the effect of oxidation temperature on the PEC properties of hematite. Films prepared at 750 °C show the highest activity towards water oxidation. These films show the largest average grain size and the highest charge carrier density, as determined from electron microscopy and impedance spectroscopy analysis. We believe that the fast processing enabled by RTP makes this technique a preferred method for investigation of novel materials and architectures, potentially also on nanostructured electrodes, where retaining high surface area is crucial to maximize performance.

  10. Soft liquid phase adsorption for fabrication of organic semiconductor films on wettability patterned surfaces.

    Science.gov (United States)

    Watanabe, Satoshi; Akiyoshi, Yuri; Matsumoto, Mutsuyoshi

    2014-01-01

    We report a soft liquid-phase adsorption (SLPA) technique for the fabrication of organic semiconductor films on wettability-patterned substrates using toluene/water emulsions. Wettability-patterned substrates were obtained by the UV-ozone treatment of self-assembled monolayers of silane coupling agents on glass plates using a metal mask. Organic semiconductor polymer films were formed selectively on the hydrophobic part of the wettability-patterned substrates. The thickness of the films fabricated by the SLPA technique is significantly larger than that of the films fabricated by dip-coating and spin-coating techniques. The film thickness can be controlled by adjusting the volume ratio of toluene to water, immersion angle, immersion temperature, and immersion time. The SLPA technique allows for the direct production of organic semiconductor films on wettability-patterned substrates with minimized material consumption and reduced number of fabrication steps.

  11. Iron oxide nanotube layer fabricated with electrostatic anodization for heterogeneous Fenton like reaction

    Energy Technology Data Exchange (ETDEWEB)

    Jang, Jun-Won; Park, Jae-Woo, E-mail: jaewoopark@hanyang.ac.kr

    2014-05-01

    Highlights: • Iron oxide nanotube was newly fabricated with potentiostatic anodization of Fe{sup 0} foil. • Cyanide was oxidized more effectively with the iron oxide nanotube and H{sub 2}O{sub 2}, resulting in fast oxidation of cyanide and cyanate. • This nanotube of Fe{sub 2}O{sub 3} on Fe{sup 0} metal can replace conventional particulate iron catalysts in Fenton-like processes. - Abstract: Iron oxide nanotubes (INT) were fabricated with potentiostatic anodization of zero valent iron foil in 1 M Na{sub 2}SO{sub 4} containing 0.5 wt% NH{sub 4}F electrolyte, holding the potential at 20, 40, and 60 V for 20 min, respectively. Field emission scanning electron microscopy and X-ray diffractometry were used to evaluate the morphology and crystalline structure of the INT film. The potential of 40 V for 20 min was observed to be optimal to produce an optimal catalytic film. Cyanide dissolved in water was degraded through the Fenton-like reaction using the INT film with hydrogen peroxide (H{sub 2}O{sub 2}). In case of INT-40 V in the presence of H{sub 2}O{sub 2} 3%, the first-order rate constant was found to be 1.7 × 10{sup −2} min{sup −1}, and 1.2 × 10{sup −2} min{sup −1} with commercial hematite powder. Degradation of cyanide was much less with only H{sub 2}O{sub 2}. Therefore, this process proposed in this work can be an excellent alternative to traditional catalysts for Fenton-like reaction.

  12. Fabrication and application of flexible graphene silk composite film electrodes decorated with spiky Pt nanospheres

    Science.gov (United States)

    Liang, Bo; Fang, Lu; Hu, Yichuan; Yang, Guang; Zhu, Qin; Ye, Xuesong

    2014-03-01

    A free-standing graphene silk composite (G/S) film was fabricated via vacuum filtration of a mixed suspension of graphene oxide and silk fibres, followed by chemical reduction. Spiky structured Pt nanospheres were grown on the film substrate by cyclic voltammetry electrodeposition. The electrical and mechanical performance of a single graphene coated silk fibre was investigated. The conductivity of a single graphene coated silk fibre is 57.9 S m-1. During 1000 bending measurements, the conductivity was stable and showed negligible variation. The G/S film has a sheet resistivity of 90 Ω □-1 with a porous and hierarchical structure. The spiky Pt nanosphere decorated G/S film was directly used as a H2O2 electrode with a sensitivity of 0.56 mA mM-1 cm-2, a linear range of 0-2.5 mM and an ultralow detection limit of 0.2 μM (S/N = 3). A glucose biosensor electrode was further fabricated by enzyme immobilization. The results show a sensitivity of 150.8 μA mM-1 cm-2 and a low detection limit of 1 μM (S/N = 3) for glucose detection. The strategy of coating graphene sheets on a silk fibre surface provides a new approach for developing electrically conductive biomaterials, tissue engineering scaffolds, bendable electrodes, and wearable biomedical devices.A free-standing graphene silk composite (G/S) film was fabricated via vacuum filtration of a mixed suspension of graphene oxide and silk fibres, followed by chemical reduction. Spiky structured Pt nanospheres were grown on the film substrate by cyclic voltammetry electrodeposition. The electrical and mechanical performance of a single graphene coated silk fibre was investigated. The conductivity of a single graphene coated silk fibre is 57.9 S m-1. During 1000 bending measurements, the conductivity was stable and showed negligible variation. The G/S film has a sheet resistivity of 90 Ω □-1 with a porous and hierarchical structure. The spiky Pt nanosphere decorated G/S film was directly used as a H2O2 electrode with a

  13. Characterization of zirconium alloy oxidation films by alternating current impedance

    International Nuclear Information System (INIS)

    Rosecrans, P.M.

    1984-01-01

    Kinetics of zirconium alloy oxidation are highly nonlinear. The results of electrochemical measurements and electron microscopy support the existence of porosity in oxide films formed on zirconium alloys in high temperature aqueous environments. Analytical treatment is presented relating oxidation kinetics to the thickness and distribution of nonporous elements within the oxide. This analysis illustrates that both the level and distribution of porosity within the oxide factor into oxidation kinetics. The barrier layer model can provide a basis for predicting the effect of environmental changes on oxidation rate. In addition, it demonstrates the need for further research into porosity generation mechanisms in oxide films

  14. Characterization of zirconium alloy oxidation films by alternating current impedance

    International Nuclear Information System (INIS)

    Rosecrans, P.M.

    1983-11-01

    Kinetics of zirocnium alloy oxidation are highly nonlinear. The results of electrochemical measurements and electron microscopy support the existence of porosity in oxide films formed on zirconium alloys in high temperature aqueous environments. Analytical treatment is presented relating oxidation kinetics to the thickness and distribution of nonporous elements within the oxide. This analysis illustrates that both the level and distribution of porosity within the oxide factor into oxidation kinetics. The barrier layer model can provide a basis for predicting the effect of environmental changes on oxidation rate. In addition, it demonstrates the need for further research into porosity generation mechanisms in oxide films

  15. Fabrication of long-term stable superoleophobic surface based on copper oxide/cobalt oxide with micro-nanoscale hierarchical roughness

    Science.gov (United States)

    Barthwal, Sumit; Lim, Si-Hyung

    2015-02-01

    We have demonstrated a simple and cost-effective technique for the large-area fabrication of a superoleophobic surface using copper as a substrate. The whole process included three simple steps: First, the copper substrate was oxidized under hot alkaline conditions to fabricate flower-like copper oxide microspheres by heating at a particular temperature for an interval of time. Second, the copper-oxide-covered copper substrate was further heated in a solution of cobalt nitrate and ammonium nitrate in the presence of an ammonia solution to fabricate cobalt oxide nanostructures. We applied this second step to increase the surface roughness because it is an important criterion for improved superoleophobicity. Finally, to reduce the surface energy of the fabricated structures, the surfaces were chemically modified with perfluorooctyltrichlorosilane. Contact-angle measurements indicate that the micro-nano binary (MNB) hierarchical structures fabricated on the copper substrate became super-repellent toward a broad range of liquids with surface tension in the range of 21.5-72 mN/m. In an attempt to significantly improve the superoleophobic property of the surface, we also examined and compared the role of nanostructures in MNB hierarchical structures with only micro-fabricated surfaces. The fabricated MNB hierarchical structures also displays thermal stability and excellent long-term stability after exposure in air for more than 9 months. Our method might provide a general route toward the preparation of novel hierarchical films on metal substrates for various industrial applications.

  16. Characterization of ultrasonic spray pyrolysed ruthenium oxide thin films

    Energy Technology Data Exchange (ETDEWEB)

    Patil, P.S.; Ennaoui, E.A.; Lokhande, C.D.; Mueller, M.; Giersig, M.; Diesner, K.; Tributsch, H. [Hahn-Meitner-Institut Berlin GmbH (Germany). Bereich Physikalische Chemie

    1997-11-21

    The ultrasonic spray pyrolysis (USP) technique was employed to deposit ruthenium oxide thin films. The films were prepared at 190 C substrate temperature and further annealed at 350 C for 30 min in air. The films were 0.22 {mu} thick and black grey in color. The structural, compositional and optical properties of ruthenium oxide thin films are reported. Contactless transient photoconductivity measurement was carried out to calculate the decay time of excess charge carriers in ruthenium oxide thin films. (orig.) 28 refs.

  17. Electrical Transport Ability of Nanostructured Potassium-Doped Titanium Oxide Film

    Science.gov (United States)

    Lee, So-Yoon; Matsuno, Ryosuke; Ishihara, Kazuhiko; Takai, Madoka

    2011-02-01

    Potassium-doped nanostructured titanium oxide films were fabricated using a wet corrosion process with various KOH solutions. The doped condition of potassium in TiO2 was confirmed by Raman spectroscopy and X-ray photoelectron spectroscopy (XPS). Nanotubular were synthesized at a dopant concentration of 0.27%, these structures disappeared. To investigate the electrical properties of K-doped TiO2, pseudo metal-oxide-semiconductor field-effect transistor (MOSFET) samples were fabricated. The samples exhibited a distinct electrical behavior and p-type characteristics. The electrical behavior was governed by the volume of the dopant when the dopant concentration was 0.18%.

  18. Magnetoresistance and Microstructure of Magnetite Nanocrystals Dispersed in Indium−Tin Oxide Thin Films

    OpenAIRE

    Okada, Koichi; Kohiki, Shigemi; Mitome, Masanori; Tanaka, Hidekazu; Arai, Masao; Mito, Masaki; Deguchi, Hiroyuki

    2009-01-01

    Epitaxial indium−tin oxide (ITO) thin films were fabricated on a yttria-stabilized zirconia (YSZ) substrate by pulsed-laser deposition using magnetite (Fe3O4) nanoparticle dispersed ITO powders as a target. Magnetoresistance of the film at a field of 1 T was 39% at 45 K, and it stayed at 3% above 225 K. The film demonstrated cooling hysteresis in the temperature dependence of direct-current magnetization. Transmission electron microscopy revealed that phase-separated Fe3O4 nanocrystals with w...

  19. Transparent and conductive polyethylene oxide film by the introduction of individualized single-walled carbon nanotubes.

    Science.gov (United States)

    Jung, Yong Chae; Muramatsu, Hiroyuki; Park, Ki Chul; Shimamoto, Daisuke; Kim, Jin Hee; Hayashi, Takuya; Song, Sung Moo; Kim, Yoong Ahm; Endo, Morinobu; Dresselhaus, Mildred S

    2009-12-16

    It is demonstrated that an optically transparent and electrically conductive polyethylene oxide (PEO) film is fabricated by the introduction of individualized single-walled carbon nanotubes (SWNTs). The incorporated SWNTs in the PEO film sustain their intrinsic electronic and optical properties and, in addition, the intrinsic properties of the polymer matrix are retained. The individualized SWNTs with smaller diameter provide high transmittance as well as good electrical conductivity in PEO films. Copyright © 2009 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  20. Spray Pyrolyzed Polycrystalline Tin Oxide Thin Film as Hydrogen Sensor

    Directory of Open Access Journals (Sweden)

    Ganesh E. Patil

    2010-09-01

    Full Text Available Polycrystalline tin oxide (SnO2 thin film was prepared by using simple and inexpensive spray pyrolysis technique (SPT. The film was characterized for their phase and morphology by X-ray diffraction (XRD and scanning electron microscopy (SEM, respectively. The crystallite size calculated from the XRD pattern is 84 nm. Conductance responses of the polycrystalline SnO2 were measured towards gases like hydrogen (H2, liquefied petroleum gas (LPG, ethanol vapors (C2H5OH, NH3, CO, CO2, Cl2 and O2. The gas sensing characteristics were obtained by measuring the sensor response as a function of various controlling factors like operating temperature, operating voltages (1 V, 5 V, 10 V 15 V, 20 V and 25 V and concentration of gases. The sensor response measurement showed that the SnO2 has maximum response to hydrogen. Furthermore; the SnO2 based sensor exhibited fast response and good recovery towards hydrogen at temperature 150 oC. The result of response towards H2 reveals that SnO2 thin film prepared by SPT would be a suitable material for the fabrication of the hydrogen sensor.

  1. Influence of oblique-angle sputtered transparent conducting oxides on performance of Si-based thin film solar cells

    International Nuclear Information System (INIS)

    Leem, Jung Woo; Yu, Jae Su

    2011-01-01

    The transparent conducting oxide (TCO) films with low-refractive-index (low-n) are fabricated by the oblique-angle sputtering method. By using the experimentally measured physical data of the fabricated low-n TCO films as the simulation parameters, the effect of low-n TCOs on the performance of a-Si:H/μc-Si:H tandem thin film solar cells is investigated using Silvaco ATLAS. The Al-doped zinc oxide, indium tin oxide (ITO), and Sb-doped tin oxide films are deposited at the flux incidence angles of θ i = 0 (normal sputtering) and θ i = 80 from the sputtering target during the sputtering process. The oblique-angle sputtered films at θ i = 80 show the inclined columnar nanostructures compared to those at θ i = 0 , modifying the optical properties of the films. This is caused mainly by the increase of porosity within the film which leads to its low-n characteristics. The a-Si:H/μc-Si:H tandem thin film solar cell incorporated with the low-n ITO film exhibits an improvement in the conversion efficiency of ∝1% under AM1.5g illumination because of its higher transmittance and lower absorption compared to that with the ITO film at θ i = 0 , indicating a conversion efficiency of 13.75%. (Copyright copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  2. Influence of oblique-angle sputtered transparent conducting oxides on performance of Si-based thin film solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Leem, Jung Woo; Yu, Jae Su [Department of Electronics and Radio Engineering, Kyung Hee University, 1 Seocheon-dong, Giheung-gu, Yongin-si, Gyeonggi-do 446-701 (Korea, Republic of)

    2011-09-15

    The transparent conducting oxide (TCO) films with low-refractive-index (low-n) are fabricated by the oblique-angle sputtering method. By using the experimentally measured physical data of the fabricated low-n TCO films as the simulation parameters, the effect of low-n TCOs on the performance of a-Si:H/{mu}c-Si:H tandem thin film solar cells is investigated using Silvaco ATLAS. The Al-doped zinc oxide, indium tin oxide (ITO), and Sb-doped tin oxide films are deposited at the flux incidence angles of {theta}{sub i} = 0 (normal sputtering) and {theta}{sub i} = 80 from the sputtering target during the sputtering process. The oblique-angle sputtered films at {theta}{sub i} = 80 show the inclined columnar nanostructures compared to those at {theta}{sub i} = 0 , modifying the optical properties of the films. This is caused mainly by the increase of porosity within the film which leads to its low-n characteristics. The a-Si:H/{mu}c-Si:H tandem thin film solar cell incorporated with the low-n ITO film exhibits an improvement in the conversion efficiency of {proportional_to}1% under AM1.5g illumination because of its higher transmittance and lower absorption compared to that with the ITO film at {theta}{sub i} = 0 , indicating a conversion efficiency of 13.75%. (Copyright copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  3. Fabrication of Cu–Zn–Sn–S–O Thin Films by the Electrochemical Deposition Method and Application to Heterojunction Cells

    Directory of Open Access Journals (Sweden)

    Kai Yang

    2012-01-01

    Full Text Available A new multinary semiconductor Cu2ZnSnS4−O (CZTSO, which does not contain toxic elements and expensive rare metals, was fabricated by the electrochemical deposition (ECD method. CZTSO thin films were deposited onto indium tin oxide (ITO- coated glass substrates by DC and two-step pulsed ECD from aqueous solutions containing CuSO4, ZnSO4, SnSO4, and Na2S2O3. The films deposited by pulsed ECD contained smaller amount of oxygen than those deposited by DC ECD. The films had band gap energies in a range from 1.5 eV and 2.1 eV. By a photoelectrochemical measurement, it was confirmed that CZTSO films showed p-type conduction and photosensitivity. CZTSO/ZnO heterojunctions exhibited rectification properties in a current-voltage measurement.

  4. Transparent Conducting Film Fabricated by Metal Mesh Method with Ag and Cu@Ag Mixture Nanoparticle Pastes

    Directory of Open Access Journals (Sweden)

    Hyun Min Nam

    2017-05-01

    Full Text Available Transparent conducting electrode film is highly desirable for application in touch screen panels (TSPs, flexible and wearable displays, sensors, and actuators. A sputtered film of indium tin oxide (ITO shows high transmittance (90% at low sheet resistance (50 Ω/cm2. However, ITO films lack mechanical flexibility, especially under bending stress, and have limitation in application to large-area TSPs (over 15 inches due to the trade-off in high transmittance and low sheet resistance properties. One promising solution is to use metal mesh-type transparent conducting film, especially for touch panel application. In this work, we investigated such inter-related issues as UV imprinting process to make a trench layer pattern, the synthesis of core-shell-type Ag and Cu@Ag composite nanoparticles and their paste formulation, the filling of Ag and Cu@Ag mixture nanoparticle paste to the trench layer, and touch panel fabrication processes.

  5. Energetic Surface Smoothing of Complex Metal-Oxide Thin Films

    International Nuclear Information System (INIS)

    Willmott, P.R.; Herger, R.; Schlepuetz, C.M.; Martoccia, D.; Patterson, B.D.

    2006-01-01

    A novel energetic smoothing mechanism in the growth of complex metal-oxide thin films is reported from in situ kinetic studies of pulsed laser deposition of La 1-x Sr x MnO 3 on SrTiO 3 , using x-ray reflectivity. Below 50% monolayer coverage, prompt insertion of energetic impinging species into small-diameter islands causes them to break up to form daughter islands. This smoothing mechanism therefore inhibits the formation of large-diameter 2D islands and the seeding of 3D growth. Above 50% coverage, islands begin to coalesce and their breakup is thereby suppressed. The energy of the incident flux is instead rechanneled into enhanced surface diffusion, which leads to an increase in the effective surface temperature of ΔT≅500 K. These results have important implications on optimal conditions for nanoscale device fabrication using these materials

  6. Characterization of quaternary metal oxide films by synchrotron x-ray fluorescence microprobe

    Energy Technology Data Exchange (ETDEWEB)

    Perry, D.L.; Thompson, A.C.; Russo, R.E. [Ernest Orlando Lawrence Berkeley National Lab., CA (United States)] [and others

    1997-04-01

    A high demand for thin films in industrial technology has been responsible for the creation of new techniques for the fabrication of such films. One highly effective method for the syntheses of variable composition thin films is pulsed-laser deposition (PLD). The technique has a large number of characteristics which make it an attractive approach for making films. It offers rapid deposition rates, congruent material transfer, simple target requirements from which to make the films, in situ multilayer deposition, and no gas composition or pressure requirements. Additionally, the technique can also afford crystalline films and films with novel structures. Pulsed-laser deposition can be used to make films of semiconductors, insulators, high-temperature superconductors, diamond-like films, and piezoelectric materials. Quaternary metal oxides involving calcium, nickel, and potassium have been shown to be quite effective in the catalysis of coal gasification and methane coupling. One approach to incorporating all three of the metal oxides into one phase is the use of laser ablation to prepare films of the catalysts so that they may be used for coatings, smooth surfaces on which to conduct detailed studies of gas-solid interface reactions that are involved in catalytic processes, and other applications. The problem of dissimilar boiling points of the three metal oxides system is overcome, since the laser ablation process effects the volatilization of all three components from the laser target essentially simultaneously. There is strong interest in gaining an understanding of the chemical and morphological aspects of the films that are deposited. Phenomena such as lattice defects and chemical heterogeneity are of interest. The experimental data discussed here are restricted to the matrix homogeneity of the films themselves for films which were void of microparticles.

  7. UV photodissociation spectroscopy of oxidized undecylenic acid films.

    Science.gov (United States)

    Gomez, Anthony L; Park, Jiho; Walser, Maggie L; Lin, Ao; Nizkorodov, Sergey A

    2006-03-16

    Oxidation of thin multilayered films of undecylenic (10-undecenoic) acid by gaseous ozone was investigated using a combination of spectroscopic and mass spectrometric techniques. The UV absorption spectrum of the oxidized undecylenic acid film is significantly red-shifted compared to that of the initial film. Photolysis of the oxidized film in the tropospheric actinic region (lambda > 295 nm) readily produces formaldehyde and formic acid as gas-phase products. Photodissociation action spectra of the oxidized film suggest that organic peroxides are responsible for the observed photochemical activity. The presence of peroxides is confirmed by mass-spectrometric analysis of the oxidized sample and an iodometric test. Significant polymerization resulting from secondary reactions of Criegee radicals during ozonolysis of the film is observed. The data strongly imply the importance of photochemistry in aging of atmospheric organic aerosol particles.

  8. Electrochromism of the electroless deposited cuprous oxide films

    International Nuclear Information System (INIS)

    Neskovska, R.; Ristova, M.; Velevska, J.; Ristov, M.

    2007-01-01

    Thin cuprous oxide films were prepared by a low cost, chemical deposition (electroless) method onto glass substrates pre-coated with fluorine doped tin oxide. The X-ray diffraction pattern confirmed the Cu 2 O composition of the films. Visible transmittance spectra of the cuprous oxide films were studied for the as-prepared, colored and bleached films. The cyclic voltammetry study showed that those films exhibited cathode coloring electrochromism, i.e. the films showed change of color from yellowish to black upon application of an electric field. The transmittance across the films for laser light of 670 nm was found to change due to the voltage change for about 50%. The coloration memory of those films was also studied during 6 h, ex-situ. The coloration efficiency at 670 nm was calculated to be 37 cm 2 /C

  9. Flexible Electronics Powered by Mixed Metal Oxide Thin Film Transistors

    Science.gov (United States)

    Marrs, Michael

    A low temperature amorphous oxide thin film transistor (TFT) and amorphous silicon PIN diode backplane technology for large area flexible digital x-ray detectors has been developed to create 7.9-in. diagonal backplanes. The critical steps in the evolution of the backplane process include the qualification and optimization of the low temperature (200 °C) metal oxide TFT and a-Si PIN photodiode process, the stability of the devices under forward and reverse bias stress, the transfer of the process to flexible plastic substrates, and the fabrication and assembly of the flexible detectors. Mixed oxide semiconductor TFTs on flexible plastic substrates suffer from performance and stability issues related to the maximum processing temperature limitation of the polymer. A novel device architecture based upon a dual active layer improves both the performance and stability. Devices are directly fabricated below 200 ºC on a polyethylene naphthalate (PEN) substrate using mixed metal oxides of either zinc indium oxide (ZIO) or indium gallium zinc oxide (IGZO) as the active semiconductor. The dual active layer architecture allows for adjustment to the saturation mobility and threshold voltage stability without the requirement of high temperature annealing, which is not compatible with flexible plastic substrates like PEN. The device performance and stability is strongly dependent upon the composition of the mixed metal oxide; this dependency provides a simple route to improving the threshold voltage stability and drive performance. By switching from a single to a dual active layer, the saturation mobility increases from 1.2 cm2/V-s to 18.0 cm2/V-s, while the rate of the threshold voltage shift decreases by an order of magnitude. This approach could assist in enabling the production of devices on flexible substrates using amorphous oxide semiconductors. Low temperature (200°C) processed amorphous silicon photodiodes were developed successfully by balancing the tradeoffs

  10. Process for the fabrication of nuclear fuel oxide pellets

    International Nuclear Information System (INIS)

    Francois, Bernard; Paradis, Yves.

    1977-01-01

    Process for the fabrication of nuclear fuel oxide pellets of the type for which particles charged with an organic binder -selected from the group that includes polyvinyl alcohol, carboxymethyl cellulose, polyvinyl compounds and methyl cellulose- are prepared from a powder of such an oxide, for instance uranium dioxide. These particles are then compressed into pellets which are then sintered. Under this process the binder charged particles are prepared by stirring the powder with a gas, spraying on to the stirred powder a solution or a suspension in a liquid of this organic binder in order to obtain these particles and then drying the particles so obtained with this gas [fr

  11. High energy density capacitors fabricated by thin film technology

    International Nuclear Information System (INIS)

    Barbee, T W; Johnson, G W; Wagner, A V.

    1999-01-01

    Low energy density in conventional capacitors severely limits efforts to miniaturize power electronics and imposes design limitations on electronics in general. We have successfully applied physical vapor deposition technology to greatly increase capacitor energy density. The high dielectric breakdown strength we have achieved in alumina thin films allows high energy density to be achieved with this moderately low dielectric constant material. The small temperature dependence of the dielectric constant, and the high reliability, high resistivity, and low dielectric loss of Al 2 O 3 , make it even more appealing. We have constructed single dielectric layer thin film capacitors and shown that they can be stacked to form multilayered structures with no loss in yield for a given capacitance. Control of film growth morphology is critical for achieving the smooth, high quality interfaces between metal and dielectric necessary for device operation at high electric fields. Most importantly, high rate deposition with extremely low particle generation is essential for achieving high energy storage at a reasonable cost. This has been achieved by reactive magnetron sputtering in which the reaction to form the dielectric oxide has been confined to the deposition surface. By this technique we have achieved a yield of over 50% for 1 cm 2 devices with an energy density of 14 J per cubic centimeter of Al 2 O 3 dielectric material in 1.2 kV, 4 nF devices. By further reducing defect density and increasing the dielectric constant of the material, we will be able to increase capacitance and construct high energy density devices to meet the requirements of applications in power electronics

  12. Method to fabricate high performance tubular solid oxide fuel cells

    Science.gov (United States)

    Chen, Fanglin; Yang, Chenghao; Jin, Chao

    2013-06-18

    In accordance with the present disclosure, a method for fabricating a solid oxide fuel cell is described. The method includes forming an asymmetric porous ceramic tube by using a phase inversion process. The method further includes forming an asymmetric porous ceramic layer on a surface of the asymmetric porous ceramic tube by using a phase inversion process. The tube is co-sintered to form a structure having a first porous layer, a second porous layer, and a dense layer positioned therebetween.

  13. Electrochemical fabrication of a cauliflower-like nanostructured Pd film from pure Pd and its applications in electrocatalysis and electroanalysis

    International Nuclear Information System (INIS)

    Xu, Shili; Zhang, Hefang; Huang, Fuli; Wang, Pengshu; Xia, Yue; Li, Zelin; Huang, Wei

    2013-01-01

    Highlights: • A cauliflower-like nanostructured Pd film was fabricated by just applying one double-potential step method. • The film fabrication involves the formation of K 2 PdCl 4 salt from pure Pd and its electroreduction to Pd atoms. • The film electrode exhibits high electrocatalytic activities toward the oxidation of ethanol and ascorbic acid. • Good analytical performances in the higher-concentration regions are obtained on the film electrode. -- Abstract: A cauliflower-like nanostructured Pd film (CNPF) has been fabricated by just applying one double-potential step on a pure Pd substrate in a KCl solution. The CNPF formation mainly involves the formation of K 2 PdCl 4 salt from pure Pd and its electroreduction to Pd atoms. The as-prepared CNPF electrode exhibits high electrocatalytic activities toward the oxidation of ethanol and ascorbic acid (AA). The CNPF electrode is also employed to detect AA by means of constant potential amperometry (CPA) and cyclic voltammetry (CV), and good analytical performances in the higher-concentration regions are obtained. In CPA studies performed at −0.4 V, the oxidation current is linearly dependent on AA concentration in the range of 0.1–7.5 mM with a detection limit of 80 μM (based on S/N = 3), a short response time of about 3 s and a high sensitivity of 589.80 μA mM −1 cm −2 . Meanwhile, the peak current responses in CVs are linear over the broad range of 0.1–35 mM with a sensitivity of 178.56 μA mM −1 cm −2 . Besides, the CNPF electrode can also be used to detect AA in medicine vitamin C tablet with satisfactory results

  14. Fabrication of assembled ZnO/TiO2 heterojunction thin film transistors using solution processing technique

    Science.gov (United States)

    Liau, Leo Chau-Kuang; Lin, Yun-Guo

    2015-01-01

    Ceramic-based metal-oxide-semiconductor (MOS) field-effect thin film transistors (TFTs), which were assembled by ZnO and TiO2 heterojunction films coated using solution processing technique, were fabricated and characterized. The fabrication of the device began with the preparation of ZnO and TiO2 films by spin coating. The ZnO and TiO2 films that were stacked together and annealed at 450 °C were characterized as a p-n junction diode. Two types of the devices, p-channel and n-channel TFTs, were produced using different assemblies of ZnO and TiO2 films. Results show that the p-channel TFTs (p-TFTs) and n-channel TFTs (n-TFTs) using the assemblies of ZnO and TiO2 films were demonstrated by source-drain current vs. drain voltage (IDS-VDS) measurements. Several electronic properties of the p- and n- TFTs, such as threshold voltage (Vth), on-off ratio, channel mobility, and subthreshold swing (SS), were determined by current-voltage (I-V) data analysis. The ZnO/TiO2-based TFTs can be produced using solution processing technique and an assembly approach.

  15. Hybrid pulse anodization for the fabrication of porous anodic alumina films from commercial purity (99%) aluminum at room temperature

    International Nuclear Information System (INIS)

    Chung, C K; Zhou, R X; Chang, W T; Liu, T Y

    2009-01-01

    Most porous anodic alumina (PAA) or anodic aluminum oxide (AAO) films are fabricated using the potentiostatic method from high-purity (99.999%) aluminum films at a low temperature of approximately 0-10 deg. C to avoid dissolution effects at room temperature (RT). In this study, we have demonstrated the fabrication of PAA film from commercial purity (99%) aluminum at RT using a hybrid pulse technique which combines pulse reverse and pulse voltages for the two-step anodization. The reaction mechanism is investigated by the real-time monitoring of current. A possible mechanism of hybrid pulse anodization is proposed for the formation of pronounced nanoporous film at RT. The structure and morphology of the anodic films were greatly influenced by the duration of anodization and the type of voltage. The best result was obtained by first applying pulse reverse voltage and then pulse voltage. The first pulse reverse anodization step was used to form new small cells and pre-texture concave aluminum as a self-assembled mask while the second pulse anodization step was for the resulting PAA film. The diameter of the nanopores in the arrays could reach 30-60 nm.

  16. Advanced fabrication method for the preparation of MOF thin films: Liquid-phase epitaxy approach meets spin coating method.

    KAUST Repository

    Chernikova, Valeriya

    2016-07-14

    Here we report a new and advanced method for the fabrication of highly oriented/polycrystalline metal-organic framework (MOF) thin films. Building on the attractive features of the liquid-phase epitaxy (LPE) approach, a facile spin coating method was implemented to generate MOF thin films in a high-throughput fashion. Advantageously, this approach offers a great prospective to cost-effectively construct thin-films with a significantly shortened preparation time and a lessened chemicals and solvents consumption, as compared to the conventional LPE-process. Certainly, this new spin-coating approach has been implemented successfully to construct various MOF thin films, ranging in thickness from a few micrometers down to the nanometer scale, spanning 2-D and 3-D benchmark MOF materials including Cu2(bdc)2•xH2O, Zn2(bdc)2•xH2O, HKUST-1 and ZIF-8. This method was appraised and proved effective on a variety of substrates comprising functionalized gold, silicon, glass, porous stainless steel and aluminum oxide. The facile, high-throughput and cost-effective nature of this approach, coupled with the successful thin film growth and substrate versatility, represents the next generation of methods for MOF thin film fabrication. Thereby paving the way for these unique MOF materials to address a wide range of challenges in the areas of sensing devices and membrane technology.

  17. Mercuric iodide composite films using polyamide, polycarbonate and polystyrene fabricated by casting

    International Nuclear Information System (INIS)

    Ugucioni, J.C.; Ghilardi Netto, T.; Mulato, M.

    2010-01-01

    Mercuric iodide (HgI 2 ) composite films were obtained by using the casting technique. Insulator polymers such as polyamide, polycarbonate and polystyrene were mixed to HgI 2 crystallites forming a final sub-millimeter thick self-standing film. Fabrication temperature varied from 10 to 100 o C, and total fabrication time reached at most 5 min. The larger the fabrication temperature, the thinner the film and the smaller its electrical resistivity. Electrical characterization was performed in the dark, under UV illumination and under mammographic X-ray exposure. The final properties of the films are discussed and related to fabrication conditions. The optimized composite film might be a better candidate for use as X-ray detector for medical imaging, in place of the single HgI 2 crystalline device.

  18. Multilayered films of cobalt oxyhydroxide nanowires/manganese oxide nanosheets for electrochemical capacitor

    Energy Technology Data Exchange (ETDEWEB)

    Zheng, Huajun [State Key Laboratory Breeding Base of Green Chemistry Synthesis Technology, Zhejiang University of Technology, Hangzhou 310014 (China); ARC Centre of Excellence for Functional Nanomaterials, School of Chemical Engineering and AIBN, The University of Queensland, St Lucia, Brisbane, QLD 4072 (Australia); Tang, Fengqiu; Mukherji, Aniruddh; Yan, Xiaoxia; Wang, Lianzhou (Max) Lu, Gao Qing [ARC Centre of Excellence for Functional Nanomaterials, School of Chemical Engineering and AIBN, The University of Queensland, St Lucia, Brisbane, QLD 4072 (Australia); Lim, Melvin [Division of Environmental and Water Resources Engineering, School of Civil and Environmental Engineering, Nanyang Technological University, 639798 (Singapore)

    2010-01-15

    Multilayered films of cobalt oxyhydroxide nanowires (CoOOHNW) and exfoliated manganese oxide nanosheet (MONS) are fabricated by potentiostatic deposition and electrostatic self-assembly on indium-tin oxide coated glass substrates. The morphology and chemical composition of these films are characterized by scanning electron microscopy (SEM) and X-ray photoelectron spectra (XPS) and the potential application as electrochemical supercapacitors are investigated using cyclic voltammetry and charge-discharge measurements. These ITO/CoOOHNW/MONS multilayered film electrodes exhibit excellent electrochemical capacitance properties, including high specific capacitance (507 F g{sup -1}) and long cycling durability (less 2% capacity loss after 5000 charge/discharge cycles). These characteristics indicate that these newly developed films may find important application for electrochemical capacitors. (author)

  19. Fabrication and Enhanced Photoelectrochemical Performance of MoS₂/S-Doped g-C₃N₄ Heterojunction Film.

    Science.gov (United States)

    Ye, Lijuan; Wang, Dan; Chen, Shijian

    2016-03-02

    We report on a novel MoS2/S-doped g-C3N4 heterojunction film with high visible-light photoelectrochemical (PEC) performance. The heterojunction films are prepared by CVD growth of S-doped g-C3N4 film on indium-tin oxide (ITO) glass substrates, with subsequent deposition of a low bandgap, 1.69 eV, visible-light response MoS2 layer by hydrothermal synthesis. Adding thiourea into melamine as the coprecursor not only facilitates the growth of g-C3N4 films but also introduces S dopants into the films, which significantly improves the PEC performance. The fabricated MoS2/S-doped g-C3N4 heterojunction film offers an enhanced anodic photocurrent of as high as ∼1.2 × 10(-4) A/cm(2) at an applied potential of +0.5 V vs Ag/AgCl under the visible light irradiation. The enhanced PEC performance of MoS2/S-doped g-C3N4 film is believed due to the improved light absorption and the efficient charge separation of the photogenerated charge at the MoS2/S-doped g-C3N4 interface. The convenient preparation of carbon nitride based heterojunction films in this work can be widely used to design new heterojunction photoelectrodes or photocatalysts with high performance for H2 evolution.

  20. Fabrication and structural analysis of polyrotaxane fibers and films

    Energy Technology Data Exchange (ETDEWEB)

    Sakai, Yasuhiro; Ueda, Kentaro; Yokoyama, Hideaki; Ito, Kohzo [Graduate School of Frontier Sciences, University of Tokyo, 5-1-5 Kashiwano-ha, Kashiwa, Chiba 277-8561 (Japan); Katsuyama, Naoya; Shimizu, Koji; Sato, Shunya; Kuroiwa, Jun; Teramoto, Akira; Abe, Koji [Faculty of Textile Science and Technology, Shinshu University, Tokida 3-15-1, Ueda, Nagano 386-8567 (Japan); Araki, Jun, E-mail: sakai@molle.k.u-tokyo.ac.jp, E-mail: kohzo@k.u-tokyo.ac.jp [International Young Researchers Empowerment Center, Shinshu University, Tokida 3-15-1, Ueda, Nagano 386-8567 (Japan)

    2011-07-20

    Polyrotaxane (PR), a typical example of topological supramolecular architecture, consists of multiple cyclic molecules threaded onto a linear polymer backbone and capped with bulky end-groups. The PR system of polyethylene glycol and {alpha}-cyclodextrin ({alpha}-CD) has been extensively studied for its facile synthesis, unique molecular structure, and possible applications for various smart materials. We have previously demonstrated the fabrication of PR-based fibers without chemical cross-links by wet spinning of PR solution. In this paper, we investigate the crystal structure of {alpha}-CDs in PR fibers and the effect of drawing on it. The {alpha}-CDs in PR fiber are found to form hexagonal channel-type structure. The drawing process promotes formation of the packing arrangement of {alpha}-CDs in the c-axis because of the sliding of {alpha}-CD molecules along the polymer backbone. In addition, we demonstrate the preparation of an elastomeric PR film having similar network structure to the fibers and ethylene glycol oligomer as plasticizer.

  1. Fabrication and structural analysis of polyrotaxane fibers and films

    International Nuclear Information System (INIS)

    Sakai, Yasuhiro; Ueda, Kentaro; Yokoyama, Hideaki; Ito, Kohzo; Katsuyama, Naoya; Shimizu, Koji; Sato, Shunya; Kuroiwa, Jun; Teramoto, Akira; Abe, Koji; Araki, Jun

    2011-01-01

    Polyrotaxane (PR), a typical example of topological supramolecular architecture, consists of multiple cyclic molecules threaded onto a linear polymer backbone and capped with bulky end-groups. The PR system of polyethylene glycol and α-cyclodextrin (α-CD) has been extensively studied for its facile synthesis, unique molecular structure, and possible applications for various smart materials. We have previously demonstrated the fabrication of PR-based fibers without chemical cross-links by wet spinning of PR solution. In this paper, we investigate the crystal structure of α-CDs in PR fibers and the effect of drawing on it. The α-CDs in PR fiber are found to form hexagonal channel-type structure. The drawing process promotes formation of the packing arrangement of α-CDs in the c-axis because of the sliding of α-CD molecules along the polymer backbone. In addition, we demonstrate the preparation of an elastomeric PR film having similar network structure to the fibers and ethylene glycol oligomer as plasticizer.

  2. Zinc-oxide nanorod / copper-oxide thin-film heterojunction for a nitrogen-monoxide gas sensor

    International Nuclear Information System (INIS)

    Yoo, Hwansu; Kim, Hyojin; Kim, Dojin

    2014-01-01

    A novel p - n oxide heterojunction structure was fabricated by employing n-type zinc-oxide (ZnO) nanorods grown on an indium-tin-oxide-coated glass substrate by using the hydrothermal method and a p-type copper-oxide (CuO) thin film deposited onto the ZnO nanorod array by using the sputtering method. The crystallinities and microstructures of the heterojunction materials were examined by using X-ray diffraction and scanning electron microscopy. The observed current - voltage characteristics of the p - n oxide heterojunction showed a nonlinear diode-like rectifying behavior. The effects of an oxidizing or electron acceptor gas, such as nitrogen monoxide (NO), on the ZnO nanorod/CuO thin-film heterojunction were investigated to determine the potential applications of the fabricated material for use in gas sensors. The forward current of the p - n heterojunction was remarkably reduced when NO gas was introduced into dry air at temperatures from 100 to 250 .deg. C. The NO gas response of the oxide heterojunction reached a maximum value at an operating temperature of 180 .deg. C and linearly increased as the NO gas concentration was increased from 5 to 30 ppm. The sensitivity value was observed to be as high as 170% at 180 .deg. C when biased at 2 V in the presence of 20-ppm NO. The ZnO nanorod/CuO thin-film heterojunction also exhibited a stable and repeatable response to NO gas. The experimental results suggest that the ZnO nanorod/CuO thin-film heterojunction structure may be a novel candidate for gas sensors.

  3. Zinc-oxide nanorod / copper-oxide thin-film heterojunction for a nitrogen-monoxide gas sensor

    Energy Technology Data Exchange (ETDEWEB)

    Yoo, Hwansu; Kim, Hyojin; Kim, Dojin [Chungnam National University, Daejeon (Korea, Republic of)

    2014-11-15

    A novel p - n oxide heterojunction structure was fabricated by employing n-type zinc-oxide (ZnO) nanorods grown on an indium-tin-oxide-coated glass substrate by using the hydrothermal method and a p-type copper-oxide (CuO) thin film deposited onto the ZnO nanorod array by using the sputtering method. The crystallinities and microstructures of the heterojunction materials were examined by using X-ray diffraction and scanning electron microscopy. The observed current - voltage characteristics of the p - n oxide heterojunction showed a nonlinear diode-like rectifying behavior. The effects of an oxidizing or electron acceptor gas, such as nitrogen monoxide (NO), on the ZnO nanorod/CuO thin-film heterojunction were investigated to determine the potential applications of the fabricated material for use in gas sensors. The forward current of the p - n heterojunction was remarkably reduced when NO gas was introduced into dry air at temperatures from 100 to 250 .deg. C. The NO gas response of the oxide heterojunction reached a maximum value at an operating temperature of 180 .deg. C and linearly increased as the NO gas concentration was increased from 5 to 30 ppm. The sensitivity value was observed to be as high as 170% at 180 .deg. C when biased at 2 V in the presence of 20-ppm NO. The ZnO nanorod/CuO thin-film heterojunction also exhibited a stable and repeatable response to NO gas. The experimental results suggest that the ZnO nanorod/CuO thin-film heterojunction structure may be a novel candidate for gas sensors.

  4. Layer-by-layer strippable Ag multilayer films fabricated by modular assembly.

    Science.gov (United States)

    Li, Yan; Chen, Xiaoyan; Li, Qianqian; Song, Kai; Wang, Shihui; Chen, Xiaoyan; Zhang, Kai; Fu, Yu; Jiao, Yong-Hua; Sun, Ting; Liu, Fu-Chun; Han, En-Hou

    2014-01-21

    We have developed a new method to fabricate multilayer films, which uses prepared thin films as modular blocks and transfer as operation mode to build up multilayer structures. In order to distinguish it from the in situ fabrication manner, this method is called modular assembly in this study. On the basis of such concept, we have fabricated a multilayer film using the silver mirror film as the modular block and poly(lactic acid) as the transfer tool. Due to the special double-layer structure of the silver mirror film, the resulting multilayer film had a well-defined stratified architecture with alternate porous/compact layers. As a consequence of the distinct structure, the interaction between the adjacent layers was so weak that the multilayer film could be layer-by-layer stripped. In addition, the top layer in the film could provide an effective protection on the morphology and surface property of the underlying layers. This suggests that if the surface of the film was deteriorated, the top layer could be peeled off and the freshly exposed surface would still maintain the original function. The successful preparation of the layer-by-layer strippable silver multilayer demonstrates that modular assembly is a feasible and effective method to build up multilayer films capable of creating novel and attractive micro/nanostructures, having great potential in the fabrication of nanodevices and coatings.

  5. Fabrication of nitrogen-containing diamond-like carbon film by filtered arc deposition as conductive hard-coating film

    Science.gov (United States)

    Iijima, Yushi; Harigai, Toru; Isono, Ryo; Imai, Takahiro; Suda, Yoshiyuki; Takikawa, Hirofumi; Kamiya, Masao; Taki, Makoto; Hasegawa, Yushi; Tsuji, Nobuhiro; Kaneko, Satoru; Kunitsugu, Shinsuke; Habuchi, Hitoe; Kiyohara, Shuji; Ito, Mikio; Yick, Sam; Bendavid, Avi; Martin, Phil

    2018-01-01

    Diamond-like carbon (DLC) films, which are amorphous carbon films, have been used as hard-coating films for protecting the surface of mechanical parts. Nitrogen-containing DLC (N-DLC) films are expected as conductive hard-coating materials. N-DLC films are expected in applications such as protective films for contact pins, which are used in the electrical check process of integrated circuit chips. In this study, N-DLC films are prepared using the T-shaped filtered arc deposition (T-FAD) method, and film properties are investigated. Film hardness and film density decreased when the N content increased in the films because the number of graphite structures in the DLC film increased as the N content increased. These trends are similar to the results of a previous study. The electrical resistivity of N-DLC films changed from 0.26 to 8.8 Ω cm with a change in the nanoindentation hardness from 17 to 27 GPa. The N-DLC films fabricated by the T-FAD method showed high mechanical hardness and low electrical resistivity.

  6. Evaluation of the nanomechanical properties of vanadium and native oxide vanadium thin films prepared by RF magnetron sputtering

    International Nuclear Information System (INIS)

    Mamun, M.A.; Zhang, K.; Baumgart, H.; Elmustafa, A.A.

    2015-01-01

    Graphical abstract: - Highlights: • V films of 50, 75, 100 nm thickness were deposited on Si by RF magnetron sputtering. • We studied structural/mechanical properties by XRD, FE-SEM, AFM, and nanoindentation. • The hardness increased from 9.0 to 14.0 GPa for 100 to 50 nm. • The modulus showed no correlation with thickness or native oxide formation. • Native oxide formation resulted in grain enlargement and roughness reduction. - Abstract: Polycrystalline vanadium thin films of 50, 75, and 100 nm thickness were deposited by magnetron sputtering of a vanadium metal target of 2 inch diameter with 99.9% purity on native oxide covered Si substrates. One set of the fabricated samples were kept in moisture free environment and the other set was exposed to ambient air at room temperature for a long period of time that resulted in formation of native oxide prior to testing. The crystal structure and phase purity of the vanadium and the oxidized vanadium thin films were characterized by X-ray diffraction (XRD). The XRD results yield a preferential (1 1 0), and (2 0 0) orientation of the polycrystalline V films and (0 0 4) vanadium oxide (V 3 O 7 ). The vanadium films thickness were verified using field emission scanning electron microscopy and the films surface morphologies were inspected using atomic force microscopy (AFM). AFM images reveal surface roughness was observed to increase with increasing film thickness and also subsequent to oxidation at room temperature. The nanomechanical properties were measured by nanoindentation to evaluate the modulus and hardness of the vanadium and the oxidized vanadium thin films. The elastic modulus of the vanadium and the oxidized vanadium films was estimated as 150 GPa at 30% film thickness and the elastic modulus of the bulk vanadium target is estimated as 135 GPa. The measured hardness of the vanadium films at 30% film thickness varies between 9 and 14 GPa for the 100 and 50 nm films, respectively, exhibiting size effects

  7. Formation of corrosion-resistant oxide film on uranium

    International Nuclear Information System (INIS)

    Petit, G.S.

    1976-01-01

    A vacuum heat-treatment method was developed for coating metallic uranium with an adherent protective film of uranium oxide. The film is prepared by vacuum heat-treating the metallic uranium at 625 0 C for 1 h while controlling the amount of oxygen being metered into the furnace. Uranium coupons with the protective film were exposed for several hundred hours in a corrosion test bath at 95 0 C and 100 percent RH without corroding. Film thicknesses ranging from 5 to 25 μm (0.0002 to 0.001 in.) were prepared and corrosion tested; the film thickness can be controlled to less than +-2.5 μm (+-0.0001 in.). The oxide film is hard, nonwetting, and very adherent. The resulting surface finish of the metal is equivalent to that of the original finish. The advantages of the oxide films over other protective coatings are given. 12 fig

  8. Indium-Doped Zinc Oxide Thin Films as Effective Anodes of Organic Photovoltaic Devices

    Directory of Open Access Journals (Sweden)

    Ziyang Hu

    2011-01-01

    Full Text Available Indium-doped zinc oxide (IZO thin films were prepared by low-cost ultrasonic spray pyrolysis (USP. Both a low resistivity (3.13×10−3 Ω cm and an average direct transmittance (400∼1500 nm about 80% of the IZO films were achieved. The IZO films were investigated as anodes in bulk-heterojunction organic photovoltaic (OPV devices based on poly(3-hexylthiophene and [6,6]-phenyl C61-butyric acid methyl ester. The device fabricated on IZO film-coated glass substrate showed an open circuit voltage of 0.56 V, a short circuit current of 8.49 mA cm-2, a fill factor of 0.40, and a power conversion efficiency of 1.91%, demonstrating that the IZO films prepared by USP technique are promising low In content and transparent electrode candidates of low-cost OPV devices.

  9. Structural and Electrical Properties of Graphene Oxide-Doped PVA/PVP Blend Nanocomposite Polymer Films

    Directory of Open Access Journals (Sweden)

    S. K. Shahenoor Basha

    2018-01-01

    Full Text Available Graphene oxide (GO nanoparticles were incorporated in PVA/PVP blend polymers for the preparation of nanocomposite polymer films by the solution cast technique. XRD, FTIR, DSC, SEM, and UV-visible studies were performed on the prepared nanocomposite polymer films. XRD revealed the amorphous nature of the prepared films. Thermal analysis of the nanocomposite polymer films was analyzed by DSC. SEM revealed the morphological features and the degree of roughness of the samples. DC conductivity studies were under taken on the samples, and the conductivity was found to be 6.13 × 10−4 S·cm−1 for the polymer film prepared at room temperature. A solid-state battery has been fabricated with the chemical composition of Mg+/(PVA/PVP  :  GO/(I2 + C + electrolyte, and its cell parameters like power density and current density were calculated.

  10. Homogeneous-oxide stack in IGZO thin-film transistors for multi-level-cell NAND memory application

    Science.gov (United States)

    Ji, Hao; Wei, Yehui; Zhang, Xinlei; Jiang, Ran

    2017-11-01

    A nonvolatile charge-trap-flash memory that is based on amorphous indium-gallium-zinc-oxide thin film transistors was fabricated with a homogeneous-oxide structure for a multi-level-cell application. All oxide layers, i.e., tunneling layer, charge trapping layer, and blocking layer, were fabricated with Al2O3 films. The fabrication condition (including temperature and deposition method) of the charge trapping layer was different from those of the other oxide layers. This device demonstrated a considerable large memory window of 4 V between the states fully erased and programmed with the operation voltage less than 14 V. This kind of device shows a good prospect for multi-level-cell memory applications.

  11. Characterization of Ag nanostructures fabricated by laser-induced dewetting of thin films

    Energy Technology Data Exchange (ETDEWEB)

    Nikov, Ru.G., E-mail: rumen_nikov24@abv.bg [Institute of Electronics, Bulgarian Academy of Sciences, Tzarigradsko Chaussee 72, Sofia 1784 (Bulgaria); Nedyalkov, N.N.; Atanasov, P.A. [Institute of Electronics, Bulgarian Academy of Sciences, Tzarigradsko Chaussee 72, Sofia 1784 (Bulgaria); Hirsch, D.; Rauschenbach, B. [Leibniz Institute of Surface Modification (IOM), 15 Permoserstrasse, D-04318 Leipzig (Germany); Grochowska, K.; Sliwinski, G. [Centre for Plasma and Laser Engineering, The Szewalski Institute, Polish Academy of Sciences, 14 Fiszera St., 80-231 Gdansk (Poland)

    2016-06-30

    Highlights: • Laser processing of Ag films produces nanoparticles with narrow size distribution. • The parameters of the nanoparticle array depend on the environment at annealing. • Raman analysis indicates that the fabricated structures can be used in SERS. - Abstract: The paper presents results on laser nanostructuring of Ag thin films. The thin films are deposited on glass substrates by pulsed laser deposition technology. The as fabricated films are then annealed by nanosecond laser pulses delivered by Nd:YAG laser system operated at λ = 355 nm. The film modification is studied as a function of the film thickness and the parameters of the laser irradiation as pulse number and laser fluence. In order to estimate the influence of the environment on the characteristics of the fabricated structures the Ag films are annealed in different surrounding media: water, air and vacuum. It is found that at certain conditions the laser treatment may lead to decomposition of the films into a monolayer of nanoparticles with narrow size distribution. The optical properties of the fabricated nanostructures are investigated on the basis of transmission spectra taken by optical spectrometer. In the measured spectra plasmon resonance band is observed as its shape and position vary depending on the processing conditions. The fabricated structures are covered with Rhodamine 6G and tested as active substrates for Surface Enhanced Raman Spectroscopy (SERS).

  12. Influences of the main anodic electroplating parameters on cerium oxide films

    Energy Technology Data Exchange (ETDEWEB)

    Yang, Yang; Yang, Yumeng; Du, Xiaoqing; Chen, Yu [Department of Chemistry, Zhejiang University, Hangzhou 310027, Zhejiang (China); Zhang, Zhao, E-mail: eaglezzy@zjuem.zju.edu.cn [Department of Chemistry, Zhejiang University, Hangzhou 310027, Zhejiang (China); Zhang, Jianqing [Department of Chemistry, Zhejiang University, Hangzhou 310027, Zhejiang (China); State Key Laboratory for Corrosion and Protection of Metals, Shenyang 110016 (China)

    2014-06-01

    Cerium oxide thin films were fabricated onto 316 L stainless steel via a potentiostatically anodic electrodeposition approach in the solutions containing cerium(III) nitrate (0.05 M), ammonia acetate (0.1 M) and ethanol (10% V/V). The electrochemical behaviors and deposition parameters (applied potential, bath temperature, dissolving O{sub 2} and bath pH) have been investigated. Results show that, the electrochemical oxidation of Ce{sup 3+} goes through one electrochemical step, which is under charge transfer control. The optimum applied potential for film deposition is 0.8 V. Bath temperature plays a significant effect on the deposition rate, composition (different colors of the film) and surface morphology of the deposits. Due to the hydrolysis of Ce{sup 3+}, cerous hydroxide is facility to form when the bath temperature is higher than 60 °C. The electroplating bath pH is another key role for the anodic deposition of cerium oxide thin films, and the best bath pH is around 6.20. N{sub 2} or O{sub 2} purged into the bath will result in film porosities and O{sub 2} favors cerium oxide particles and film generation.

  13. Ultra-low power thin film transistors with gate oxide formed by nitric acid oxidation method

    International Nuclear Information System (INIS)

    Kobayashi, H.; Kim, W. B.; Matsumoto, T.

    2011-01-01

    We have developed a low temperature fabrication method of SiO 2 /Si structure by use of nitric acid, i.e., nitric acid oxidation of Si (NAOS) method, and applied it to thin film transistors (TFT). A silicon dioxide (SiO 2 ) layer formed by the NAOS method at room temperature possesses 1.8 nm thickness, and its leakage current density is as low as that of thermally grown SiO 2 layer with the same thickness formed at ∼900 deg C. The fabricated TFTs possess an ultra-thin NAOS SiO 2 /CVD SiO 2 stack gate dielectric structure. The ultrathin NAOS SiO 2 layer effectively blocks a gate leakage current, and thus, the thickness of the gate oxide layer can be decreased from 80 to 20 nm. The thin gate oxide layer enables to decrease the operation voltage to 2 V (cf. the conventional operation voltage of TFTs with 80 nm gate oxide: 12 V) because of the low threshold voltages, i.e., -0.5 V for P-ch TFTs and 0.5 V for N-ch TFTs, and thus the consumed power decreases to 1/36 of that of the conventional TFTs. The drain current increases rapidly with the gate voltage, and the sub-threshold voltage is ∼80 mV/dec. The low sub-threshold swing is attributable to the thin gate oxide thickness and low interface state density of the NAOS SiO 2 layer. (authors)

  14. Silicone Adhesives for High Temperature Inflatable Fabrics and Polymer Films, Phase I

    Data.gov (United States)

    National Aeronautics and Space Administration — Thin films, elastomeric materials, high temperature fabrics and adhesives that are capable of withstanding thermal extremes (-130oC to 500oC) are highly desirable...

  15. Nanocomposite Thin Film of Poly(3-aminobenzoic acid and Multiwalled Carbon Nanotubes Fabricated through an Electrochemical Method

    Directory of Open Access Journals (Sweden)

    Paphawadee Netsuwan

    2014-01-01

    Full Text Available The composite thin films of poly(3-aminobenzoic acid (PABA and multiwalled carbon nanotubes (MWNTs are successfully fabricated through an electrochemical method. The composite mixtures containing 50 mM of 3-aminobenzoic acid with various concentrations of MWNTs (1.0, 2.5, 5.0, 7.5, and 10 mg/mL in 0.5 M H2SO4 were prepared and used in this study. Cyclic voltammetry (CV was used for fabrication and monitoring the electropolymerization of the composite thin films with potential range of 0 to 1100 mV for 5 cycles at scan rate of 20 mV/s on indium tin oxide- (ITO-coated glass substrate. UV-vis absorption spectroscopy, atomic force microscopy (AFM, and scanning electron microscopy (SEM techniques were employed to characterize the obtained composite thin films. It was found that MWNTs can enhance the peak current of CV traces of the PABA/MWNTs composite thin films without affecting the UV-vis absorption spectra. The surface morphology of the thin films can be studied using AFM and SEM techniques.

  16. Rapid fabrication of mesoporous TiO2 thin films by pulsed fibre laser for dye sensitized solar cells

    Science.gov (United States)

    Hadi, Aseel; Alhabradi, Mansour; Chen, Qian; Liu, Hong; Guo, Wei; Curioni, Michele; Cernik, Robert; Liu, Zhu

    2018-01-01

    In this paper we demonstrate for the first time that a fibre laser with a wavelength of 1070 nm and a pulse width of milliseconds can be applied to generate mesoporous nanocrystalline (nc) TiO2 thin films on ITO coated glass in ambient atmosphere, by complete vaporisation of organic binder and inter-connection of TiO2 nanoparticles, without thermally damaging the ITO layer and the glass substrate. The fabrication of the mesoporous TiO2 thin films was achieved by stationary laser beam irradiation of 1 min. The dye sensitized solar cell (DSSC) with the laser-sintered TiO2 photoanode reached higher power conversion efficiency (PCE) of 3.20% for the TiO2 film thickness of 6 μm compared with 2.99% for the furnace-sintered. Electrochemical impedance spectroscopy studies revealed that the laser sintering under the optimised condition effectively decreased charge transfer resistance and increased electron lifetime of the TiO2 thin films. The use of the fibre laser with over 40% wall-plug efficiency offers an economically-feasible, industrial viable solution to the major challenge of rapid fabrication of large scale, mass production of mesoporous metal oxide thin film based solar energy systems, potentially for perovskite and monolithic tandem solar cells, in the future.

  17. Facile fabrication of nano-structured silica hybrid film with superhydrophobicity by one-step VAFS approach

    Science.gov (United States)

    Jia, Yi; Yue, Renliang; Liu, Gang; Yang, Jie; Ni, Yong; Wu, Xiaofeng; Chen, Yunfa

    2013-01-01

    Here we report a novel one-step vapor-fed aerosol flame synthesis (VAFS) method to attain silica hybrid film with superhydrophobicity on normal glass and other engineering material substrates using hexamethyldisiloxane (HMDSO) as precursor. The deposited nano-structured silica films represent excellent superhydrophobicity with contact angle larger than 150° and sliding angle below 5°, without any surface modification or other post treatments. SEM photographs proved that flame-made SiO2 nanoparticles formed dual-scale surface roughness on the substrates. It was confirmed by FTIR and XPS that the in situ formed organic fragments on the particle surface as species like (CH3)xSiO2-x/2 (x = 1, 2, 3) which progressively lowered the surface energy of fabricated films. Thus, these combined dual-scale roughness and lowered surface energy cooperatively produced superhydrophobic films. IR camera had been used to monitor the real-time flame temperature. It is found that the inert dilution gas inflow played a critical role in attaining superhydrophobicity due to its cooling and anti-oxidation effect. This method is facile and scalable for diverse substrates, without any requirement of complex equipments and multiple processing steps. It may contribute to the industrial fabrication of superhydrophobic films.

  18. Picosecond laser registration of interference pattern by oxidation of thin Cr films

    Energy Technology Data Exchange (ETDEWEB)

    Veiko, Vadim; Yarchuk, Michail [ITMO University, Kronverksky Ave. 49, St. Petersburg, 197101 (Russian Federation); Zakoldaev, Roman, E-mail: zakoldaev@gmail.com [ITMO University, Kronverksky Ave. 49, St. Petersburg, 197101 (Russian Federation); Gedvilas, Mindaugas; Račiukaitis, Gediminas [Center for Physical Sciences and Technology, Savanoriu Ave. 231, LT-02300, Vilnius (Lithuania); Kuzivanov, Michail; Baranov, Alexander [ITMO University, Kronverksky Ave. 49, St. Petersburg, 197101 (Russian Federation)

    2017-05-15

    Highlights: • Periodical patterning of thin films was achieved by combining two technologies. • Selective chemical etching was combined with laser-induced oxidation. • Formation of the protective oxide layer prevented of chromium film from etching. • 1D binary grating with the chromium stripe width of 750 nm was fabricated. - Abstract: The laser oxidation of thin metallic films followed by its selective chemical etching is a promising method for the formation of binary metal structures on the glass substrates. It is important to confirm that even a single ultrashort laser pulse irradiation is able to create the protective oxide layer that makes possible to imprint the thermochemical image. Results of the thermo-chemical treatment of thin chromium films irradiated by picosecond laser pulse utilizing two and four beam interference combined with the chemical etching are presented. The spatial resolution of this method can be high enough due to thermo-chemical sharpening and can be close to the diffraction limit. Micro-Raman spectroscopy was applied for characterization of the chemical composition of the protective oxide layers formed under atmospheric conditions on the surface of thin chromium films.

  19. Preparation and characterization of vanadium oxide thin films

    Energy Technology Data Exchange (ETDEWEB)

    Monfort, O.; Plesch, G. [Comenius University of Bratislava, Faculty of Natural Sciences, Department of Inorganic Chemistry, 84215 Bratislava (Slovakia); Roch, T. [Comenius University of Bratislava, Faculty of Mathematics Physics and Informatics, Department of Experimental Physics, 84248 Bratislava (Slovakia)

    2013-04-16

    The thermotropic VO{sub 2} films have many applications, since they exhibit semiconductor-conductor switching properties at temperature around 70 grad C. Vanadium oxide thin films were prepared via sol-gel method. Spin coater was used to depose these films on Si/SiO{sub 2} and lime glass substrates. Thin films of V{sub 2}O{sub 5} can be reduced to metastable VO{sub 2} thin films at the temperature of 450 grad C under the pressure of 10{sup -2} Pa. These films are then converted to thermotropic VO{sub 2} at 700 grad C in argon under normal pressure. (authors)

  20. Fabrication and characterization of a cathode-supported tubular solid oxide fuel cell

    Energy Technology Data Exchange (ETDEWEB)

    Zhao, Chunhua; Liu, Renzhu; Wang, Shaorong; Wang, Zhenrong; Qian, Jiqin; Wen, Tinglian [CAS Key Laboratory of Materials for Energy Conversion, Shanghai Institute of Ceramics, Chinese Academy of Sciences (SICCAS), 1295 Dingxi Road, Shanghai 200050 (China)

    2009-07-15

    A cathode-supported tubular solid oxide fuel cell (CTSOFC) with the length of 6.0 cm and outside diameter of 1.0 cm has been successfully fabricated via dip-coating and co-sintering techniques. A crack-free electrolyte film with a thickness of {proportional_to}14 {mu}m was obtained by co-firing of cathode/cathode active layer/electrolyte/anode at 1250 C. The relative low densifying temperature for electrolyte was attributed to the large shrinkage of the green tubular which assisted the densification of electrolyte. The assembled cell was electrochemically characterized with humidified H{sub 2} as fuel and O{sub 2} as oxidant. The open circuit voltages (OCV) were 1.1, 1.08 and 1.06 V at 750, 800 and 850 C, respectively, with the maximum power densities of 157, 272 and 358 mW cm{sup -2} at corresponding temperatures. (author)

  1. Direct laser writing of micro-supercapacitors on hydrated graphite oxide films

    Science.gov (United States)

    Gao, Wei; Singh, Neelam; Song, Li; Liu, Zheng; Reddy, Arava Leela Mohana; Ci, Lijie; Vajtai, Robert; Zhang, Qing; Wei, Bingqing; Ajayan, Pulickel M.

    2011-08-01

    Microscale supercapacitors provide an important complement to batteries in a variety of applications, including portable electronics. Although they can be manufactured using a number of printing and lithography techniques, continued improvements in cost, scalability and form factor are required to realize their full potential. Here, we demonstrate the scalable fabrication of a new type of all-carbon, monolithic supercapacitor by laser reduction and patterning of graphite oxide films. We pattern both in-plane and conventional electrodes consisting of reduced graphite oxide with micrometre resolution, between which graphite oxide serves as a solid electrolyte. The substantial amounts of trapped water in the graphite oxide makes it simultaneously a good ionic conductor and an electrical insulator, allowing it to serve as both an electrolyte and an electrode separator with ion transport characteristics similar to that observed for Nafion membranes. The resulting micro-supercapacitor devices show good cyclic stability, and energy storage capacities comparable to existing thin-film supercapacitors.

  2. Fabrication and Protein Conjugation of Aligned Polypyrrole-Poly(L-lactic acid) Fibers Film with the Conductivity and Stability.

    Science.gov (United States)

    Qin, Jiabang; Huang, Zhongbing; Yin, Guangfu; Yang, Anneng; Han, Wei

    2016-03-01

    The conducting composite scaffold, including fiber-cores of aligned poly(L-lactic acid) (PLLA) and shell-layer of polypyrrole (PPy), was fabricated, and then bovine serum albumin (BSA) was conjugated on the PPy shell-layer. Aligned PLLA fibers (about 300 nm diameter) were obtained by electrospinning and rotating drum collection, and then coated by PPy nanoparticles (NPs, about 50 nm diameter) via chemical oxidation. The surface resistivity of PPy-PLLA fibers film were 0.971, 0.874 kΩ. cm at the fiber's vertical and parallel directions, respectively. The results of PPy-PLLA fibers film immersed in phosphate buffer saline for 8 d indicated that the fibers morphology and the film conductivity were not significantly changed, and the fluorescent images showed that FITC-labeled BSA (FITC-BSA) were successfully conjugated in the fibers film with carbodiimide chemistry, and the largest amount of FITC-BSA conjugated in the fibers film from 100 μg/mL proteins solution was 31.31 μg/cm2 due to lots of poly(glutamic acid) in surface-nanogrooves of the fibers surface. Under electrical stimulation of 100 mV, the fibers film was accompanied the release of all conjugated FITC-BSA with the detachment of some PPy NPs. These results suggested that PPy-PLLA fibers film would be potentially applied in the construction of degradable tissue engineering scaffold with protein factors, especially neurotrophic factors for nerve tissue repair.

  3. Material engineering to fabricate rare earth erbium thin films for exploring nuclear energy sources

    Science.gov (United States)

    Banerjee, A.; Abhilash, S. R.; Umapathy, G. R.; Kabiraj, D.; Ojha, S.; Mandal, S.

    2018-04-01

    High vacuum evaporation and cold-rolling techniques to fabricate thin films of the rare earth lanthanide-erbium have been discussed in this communication. Cold rolling has been used for the first time to successfully fabricate films of enriched and highly expensive erbium metal with areal density in the range of 0.5-1.0 mg/cm2. The fabricated films were used as target materials in an advanced nuclear physics experiment. The experiment was designed to investigate isomeric states in the heavy nuclei mass region for exploring physics related to nuclear energy sources. The films fabricated using different techniques varied in thickness as well as purity. Methods to fabricate films with thickness of the order of 0.9 mg/cm2 were different than those of 0.4 mg/cm2 areal density. All the thin films were characterized using multiple advanced techniques to accurately ascertain levels of contamination as well as to determine their exact surface density. Detailed fabrication methods as well as characterization techniques have been discussed.

  4. Effects of the wet air on the properties of the lanthanum oxide and lanthanum aluminate thin films

    International Nuclear Information System (INIS)

    Jun, Jin Hyung; Choi, Doo Jin

    2006-01-01

    Lanthanum oxide and lanthanum aluminate thin films were deposited on Si substrates. The as-grown films were stored in wet ambient and dry ambient for days and annealed after storage and also the structural and the electrical properties of the films were investigated. As the storage time increased, the La 2 O 3 films stored in wet ambient showed rapid reaction with moisture and the properties degraded. In case of the LAO films, although the thickness of the film also increased during hydration, the properties of the film did not so much changed due to the role of the incorporated aluminum. The LAO films showed better hydration resistance characteristics and so more suitable for conventional wet cleaning process in semiconductor fabrication

  5. Direct fabrication of rigid microstructures on a metallic roller using a dry film resist

    International Nuclear Information System (INIS)

    Jiang, Liang-Ting; Huang, Tzu-Chien; Chang, Chih-Yuan; Ciou, Jian-Ren; Yang, Sen-Yeu; Huang, Po-Hsun

    2008-01-01

    This paper presents a novel method to fabricate a metallic roller mold with microstructures on its surface using a dry film resist (DFR). The DFR is laminated uniformly onto the curvy surface of a copper roller. After that, the micro-scale photoresist on the surface of the roller can be patterned by non-planar lithography using a flexible film photomask, followed by ferric chloride wet etching to obtain the desired microstructures. This method overcomes the uniformity issue of photoresist coating on rollers, and solves the molds sliding problem during the embossing process because the microstructures are fabricated directly on the roller surface. Furthermore, the rigid metallic roller mold has excellent strength durability and temperature endurance, which can be used in roller hot embossing with a high embossing pressure. The fabricated microstructure roller mold is used as a mold in the hybrid extrusion roller embossing process and successfully fabricates uniform micro-scale prominent line arrays on PC films. This result proves that the roller fabricated by this method can be successfully used in roller embossing for microstructure mass production. The excellent flatness of dry film resist laminating is the key in this fabrication process. The flexible film photomask can be easily designed using CAD software; this roller fabrication method enhances the design flexibility and reduces the cost and time

  6. Indium tin oxide with titanium doping for transparent conductive film application on CIGS solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Liu, Wei-Sheng; Cheng, Huai-Ming; Hu, Hung-Chun; Li, Ying-Tse; Huang, Shi-Da; Yu, Hau-Wei [Department of Photonics Engineering, Yuan Ze University, Chung-Li 32003, Taiwan (China); Pu, Nen-Wen, E-mail: nwpuccit@gmail.com [Department of Photonics Engineering, Yuan Ze University, Chung-Li 32003, Taiwan (China); Liang, Shih-Chang [Materials & Electro-Optics Research Division, National Chung-Shan Institute of Science and Technology, Lung Tan 32599, Taiwan (China)

    2015-11-01

    Highlights: • Ti-doped indium tin oxide (ITO) films were deposited by DC magnetron sputtering. • Optimal optoelectronic properties were achieved at a sputtering power of 100 W. • Resistivity = 3.2 × 10{sup −4} Ω-cm without substrate heating or post growth annealing. • Mean visible and NIR transmittances of 83 and 80%, respectively, were achieved. • Efficient batteries (11.3%) were fabricated by applying ITO:Ti to CIGS solar cells. - Abstract: In this study, Ti-doped indium tin oxide (ITO:Ti) thin films were fabricated using a DC-magnetron sputtering deposition method. The thin films were grown without introducing oxygen or heating the substrate, and no post-growth annealing was performed after fabrication. The thickness of the ITO:Ti thin films (350 nm) was controlled while increasing the sputtering power from 50 to 150 W. According to the results, the optimal optoelectronic properties were observed in ITO:Ti thin films grown at a sputtering power of 100 W, yielding a reduced resistivity of 3.2 × 10{sup −4} Ω-cm and a mean high transmittance of 83% at wavelengths ranging from 400 to 800 nm. The optimal ITO:Ti thin films were used to fabricate a Cu(In,Ga)Se{sub 2} solar cell that exhibited a photoelectric conversion efficiency of 11.3%, a short-circuit current density of 33.1 mA/cm{sup 2}, an open-circuit voltage of 0.54 V, and a fill factor of 0.64.

  7. Fabricating Pinhole-Free YSZ Sub-Microthin Films by Magnetron Sputtering for Micro-SOFCs

    Directory of Open Access Journals (Sweden)

    T. Hill

    2011-01-01

    Full Text Available Submicron thin yttria stabilized zirconia (YSZ films were prepared on a variety of substrates with different surface morphologies by magnetron sputtering followed by thermal oxidation. Pinholes were observed in the films deposited on nanoporous alumina substrates. Initial dense Y/Zr films developed nanocracks after thermal oxidation on smooth Si wafer substrates. At optimal sputtering and oxidation conditions, smooth and crack/pore-free films were achieved on Si wafer substrates. The thin YSZ films exhibited fully ionic conduction with ionic conductivities, and activation energy corroborated well with the values from commercial YSZ plates. The thin YSZ films can be utilized in Solid Oxide Fuel Cells (SOFCs for intermediate temperature operations.

  8. Unique Crystal Orientation of Poly(ethylene oxide) Thin Films by Crystallization Using a Thermal Gradient

    DEFF Research Database (Denmark)

    Gbabode, Gabin; Delvaux, Maxime; Schweicher, Guillaume

    2017-01-01

    Poly(ethylene oxide), (PEO), thin films of different thicknesses (220, 450, and 1500 nm) and molecular masses (4000, 8000, and 20000 g/mol) have been fabricated by spin-coating of methanol solutions onto glass substrates. All these samples have been recrystallized from the melt using a directional......, to significantly decrease the distribution of crystal orientation obtained after crystallization using the thermal gradient technique....

  9. Fabrication of oxide dispersion strengthened ferritic clad fuel pins

    International Nuclear Information System (INIS)

    Zirker, L.R.; Bottcher, J.H.; Shikakura, S.; Tsai, C.L.

    1991-01-01

    A resistance butt welding procedure was developed and qualified for joining ferritic fuel pin cladding to end caps. The cladding are INCO MA957 and PNC ODS lots 63DSA and 1DK1, ferritic stainless steels strengthened by oxide dispersion, while the end caps are HT9 a martensitic stainless steel. With adequate parameter control the weld is formed without a residual melt phase and its strength approaches that of the cladding. This welding process required a new design for fuel pin end cap and weld joint. Summaries of the development, characterization, and fabrication processes are given for these fuel pins. 13 refs., 6 figs., 1 tab

  10. On the Design of Oxide Films, Nanomaterials, and Heterostructures for Solar Water Oxidation Photoanodes

    Science.gov (United States)

    Kronawitter, Coleman Xaver

    Photoelectrochemistry and its associated technologies show unique potential to facilitate the large-scale production of solar fuels—those energy-rich chemicals obtained through conversion processes driven by solar energy, mimicking the photosynthetic process of green plants. The critical component of photoelectrochemical devices designed for this purpose is the semiconductor photoelectrode, which must be optically absorptive, chemically stable, and possess the required electronic band alignment with respect to the redox couple of the electrolyte to drive the relevant electrochemical reactions. After many decades of investigation, the primary technological obstacle remains the development of photoelectrode structures capable of efficient and stable conversion of light with visible frequencies, which is abundant in the solar spectrum. Metal oxides represent one of the few material classes that can be made photoactive and remain stable to perform the required functions. The unique range of functional properties of oxides, and especially the oxides of transition metals, relates to their associated diversity of cation oxidation states, cation electronic configurations, and crystal structures. In this dissertation, the use of metal oxide films, nanomaterials, and heterostructures in photoelectrodes enabling the solar-driven oxidation of water and generation of hydrogen fuel is examined. A range of transition- and post-transition-metal oxide material systems and nanoscale architectures is presented. The first chapters present results related to electrodes based on alpha-phase iron(III) oxide, a promising visible-light-active material widely investigated for this application. Studies of porous films fabricated by physical vapor deposition reveal the importance of structural quality, as determined by the deposition substrate temperature, on photoelectrochemical performance. Heterostructures with nanoscale feature dimensionality are explored and reviewed in a later chapter

  11. Valence control of cobalt oxide thin films by annealing atmosphere

    International Nuclear Information System (INIS)

    Wang Shijing; Zhang Boping; Zhao Cuihua; Li Songjie; Zhang Meixia; Yan Liping

    2011-01-01

    The cobalt oxide (CoO and Co 3 O 4 ) thin films were successfully prepared using a spin-coating technique by a chemical solution method with CH 3 OCH 2 CH 2 OH and Co(NO 3 ) 2 .6H 2 O as starting materials. The grayish cobalt oxide films had uniform crystalline grains with less than 50 nm in diameter. The phase structure is able to tailor by controlling the annealing atmosphere and temperature, in which Co 3 O 4 thin film was obtained by annealing in air at 300-600, and N 2 at 300, and transferred to CoO thin film by raising annealing temperature in N 2 . The fitted X-ray photoelectron spectroscopy (XPS) spectra of the Co2p electrons are distinguishable from different valence states of cobalt oxide especially for their satellite structure. The valence control of cobalt oxide thin films by annealing atmosphere contributes to the tailored optical absorption property.

  12. Influence of annealing on texture properties of cerium oxide thin films

    International Nuclear Information System (INIS)

    Arunkumar, P.; Suresh Babu, K.; Ramaseshan, R.; Dash, S.

    2013-01-01

    Future power demand needs an energy source with higher efficiency, better power density, clean energy and fuel flexibility. Solid oxide fuel cell (SOFC) is one of the potential sources for future needs. Though the polymer and direct methanol based electrolyte are much suitable, for versatile applications (portable devices) they are having major challenges such as design, platinum based catalyst, lower power density and fuel flexibility (free from hydrocarbons). However, in SOFC the high operating temperature is the only major issue. Operating temperature of SOFC could be reduced by proper selection of electrolyte material which should have minimum ionic conductivity of 0.1 Scm -1 at reduced activation energy. This can be achieved by thin film based doped cerium oxide electrolyte for SOFC, leads to Intermediate Temperature Solid Oxide Fuel Cell (ITSOFC). In the present work, we focus on the synthesis of cerium oxide and 20 mol % samarium doped cerium oxide (SDC) nanoparticles by co-precipitation method and to synthesis thin films of the same. Pellets of those powders were heat treated at different temperatures and used as targets for e-beam evaporation to fabricate thin film based electrolyte. Stoichiometry of both powders and thin films were confirmed by XRF and EPMA. GIXRD profiles of ceria and SDC thin films are shown below and a preferred orientation effect is observed in SDC films. In SDC films the X-ray peaks have a shift towards lower angles, due to the difference in ionic radii of Ce 4+ and Sm 3+ . The band gap of CeO 2 (2.88 eV) from optical absorption technique indicates the presence of Ce 3+ with Ce 4+ , indirectly shows the concentration of oxygen vacancies which is required for the thin film electrolyte

  13. Structural and interfacial characteristics of thin (2 films grown by electron cyclotron resonance plasma oxidation on [100] Si substrates

    International Nuclear Information System (INIS)

    Nguyen, T.D.; Carl, D.A.; Hess, D.W.; Lieberman, M.A.; Gronsky, R.

    1991-04-01

    The feasibility of fabricating ultra-thin SiO 2 films on the order of a few nanometer thickness has been demonstrated. SiO 2 thin films of approximately 7 nm thickness have been produced by ion flux-controlled Electron Cyclotron Resonance plasma oxidation at low temperature on [100] Si substrates, in reproducible fashion. Electrical measurements of these films indicate that they have characteristics comparable to those of thermally grown oxides. The thickness of the films was determined by ellipsometry, and further confirmed by cross-sectional High-Resolution Transmission Electron Microscopy. Comparison between the ECR and the thermal oxide films shows that the ECR films are uniform and continuous over at least a few microns in lateral direction, similar to the thermal oxide films grown at comparable thickness. In addition, HRTEM images reveal a thin (1--1.5 nm) crystalline interfacial layer between the ECR film and the [100] substrate. Thinner oxide films of approximately 5 nm thickness have also been attempted, but so far have resulted in nonuniform coverage. Reproducibility at this thickness is difficult to achieve

  14. Cuprous oxide thin films grown by hydrothermal electrochemical deposition technique

    International Nuclear Information System (INIS)

    Majumder, M.; Biswas, I.; Pujaru, S.; Chakraborty, A.K.

    2015-01-01

    Semiconducting cuprous oxide films were grown by a hydrothermal electro-deposition technique on metal (Cu) and glass (ITO) substrates between 60 °C and 100 °C. X-ray diffraction studies reveal the formation of cubic cuprous oxide films in different preferred orientations depending upon the deposition technique used. Film growth, uniformity, grain size, optical band gap and photoelectrochemical response were found to improve in the hydrothermal electrochemical deposition technique. - Highlights: • Cu 2 O thin films were grown on Cu and glass substrates. • Conventional and hydrothermal electrochemical deposition techniques were used. • Hydrothermal electrochemical growth showed improved morphology, thickness and optical band gap

  15. Fabrication of nanostructured Al-doped ZnO thin film for methane sensing applications

    Energy Technology Data Exchange (ETDEWEB)

    Shafura, A. K., E-mail: shafura@ymail.com; Azhar, N. E. I.; Uzer, M.; Mamat, M. H. [NANO-ElecTronic Centre (NET), Faculty of Electrical Engineering, Universiti Teknologi MARA, 40450 Shah Alam, Selangor (Malaysia); Sin, N. D. Md. [NANO-ElecTronic Centre (NET), Faculty of Electrical Engineering, Universiti Teknologi MARA, 40450 Shah Alam, Selangor (Malaysia); Faculty of Electrical Engineering, Universiti Teknologi MARA Cawangan Johor, Kampus Pasir Gudang, 81750 Masai, Johor (Malaysia); Saurdi, I. [NANO-ElecTronic Centre (NET), Faculty of Electrical Engineering, Universiti Teknologi MARA, 40450 Shah Alam, Selangor (Malaysia); Faculty of Electrical Engineering, Universiti Teknologi MARA Sarawak, Kampus Kota Samarahan Jalan Meranek, Sarawak (Malaysia); Shuhaimi, A. [Dimensional Materials Research Centre (LDMRC), Department of Physics, Faculty of Science, University ofMalaya, 50603 Kuala Lumpur (Malaysia); Alrokayan, Salman A. H.; Khan, Haseeb A. [Research Chair of Targeting and Treatment Cancer Using Nanoparticles, Department Of Biochemistry, College Of Science, King Saud University, P.O: 2454 Riyadh 11451 (Saudi Arabia); Rusop, M., E-mail: nanouitm@gmail.com [NANO-ElecTronic Centre (NET), Faculty of Electrical Engineering, Universiti Teknologi MARA, 40450 Shah Alam, Selangor (Malaysia); NANO-SciTech Centre (NST), Institute of Science, Universiti Teknologi MARA, 40450 Shah Alam, Selangor (Malaysia)

    2016-07-06

    CH{sub 4} gas sensor was fabricated using spin-coating method of the nanostructured ZnO thin film. Effect of annealing temperature on the electrical and structural properties of the film was investigated. Dense nanostructured ZnO film are obtained at higher annealing temperature. The optimal condition of annealing temperature is 500°C which has conductivity and sensitivity value of 3.3 × 10{sup −3} S/cm and 11.5%, respectively.

  16. Flame retardant behavior of polyelectrolyte-clay thin film assemblies on cotton fabric.

    Science.gov (United States)

    Li, Yu-Chin; Schulz, Jessica; Mannen, Sarah; Delhom, Chris; Condon, Brian; Chang, Sechin; Zammarano, Mauro; Grunlan, Jaime C

    2010-06-22

    Cotton fabric was treated with flame-retardant coatings composed of branched polyethylenimine (BPEI) and sodium montmorillonite (MMT) clay, prepared via layer-by-layer (LbL) assembly. Four coating recipes were created by exposing fabric to aqueous solutions of BPEI (pH 7 or 10) and MMT (0.2 or 1 wt %). BPEI pH 10 produces the thickest films, while 1 wt % MMT gives the highest clay loading. Each coating recipe was evaluated at 5 and 20 bilayers. Thermogravimetric analysis showed that coated fabrics left as much as 13% char after heating to 500 degrees C, nearly 2 orders of magnitude more than uncoated fabric, with less than 4 wt % coming from the coating itself. These coatings also reduced afterglow time in vertical flame tests. Postburn residues of coated fabrics were examined with SEM and revealed that the weave structure and fiber shape in all coated fabrics were preserved. The BPEI pH 7/1 wt % MMT recipe was most effective. Microcombustion calorimeter testing showed that all coated fabrics reduced the total heat release and heat release capacity of the fabric. Fiber count and strength of uncoated and coated fabric are similar. These results demonstrate that LbL assembly is a relatively simple method for imparting flame-retardant behavior to cotton fabric. This work lays the foundation for using these types of thin film assemblies to make a variety of complex substrates (foam, fabrics, etc.) flame resistant.

  17. Superhydrophilicity of anodic aluminum oxide films: From 'honeycomb' to 'bird's nest'

    International Nuclear Information System (INIS)

    Ye Jiaming; Yin Qiming; Zhou Yongliang

    2009-01-01

    An electrochemical method has been used to prepare different kinds of surfaces including 'honeycomb'-like and 'bird's nest'-like surfaces on anodic aluminum oxide (AAO) films. The relationship between the morphology and wettability of the AAO films was investigated by scanning electron microscopy and the measurement of water contact angles. The results show that the 'bird's nest'-like structure is necessary for superhydrophilic property, which provide direct experimental evidences for the 3D capillary theory concerning superhydrophilicity. It is expected that this investigation will be devoted to guiding the fabrication of superhydrophilic and superhydrophobic surfaces.

  18. Fabricated super-hydrophobic film with potentiostatic electrolysis method on copper for corrosion protection

    International Nuclear Information System (INIS)

    Wang Peng; Qiu Ri; Zhang Dun; Lin Zhifeng; Hou Baorong

    2010-01-01

    A novel one-step potentiostatic electrolysis method was proposed to fabricate super-hydrophobic film on copper surface. The resulted film was characterized by contact angle tests, Fourier transform infrared spectra (FT-IR), X-ray photoelectron spectroscopy (XPS), Field emission scanning electron microscopy (FE-SEM) and electrochemical measurements. It could be inferred that the super-hydrophobic property resulted from the flower-like structure of copper tetradecanoate film. In the presence of super-hydrophobic film, the anodic and cathodic polarization current densities are reduced for more than five and four orders of magnitude, respectively. The air trapped in the film is the essential contributor of the anticorrosion property of film for its insulation, the copper tetradecanoate film itself acts as a 'frame' to trap air as well as a coating with inhibition effect. The super-hydrophobic film presents excellent inhibition effect to the copper corrosion and stability in water containing Cl - .

  19. Hybrid nanostructure heterojunction solar cells fabricated using vertically aligned ZnO nanotubes grown on reduced graphene oxide.

    Science.gov (United States)

    Yang, Kaikun; Xu, Congkang; Huang, Liwei; Zou, Lianfeng; Wang, Howard

    2011-10-07

    Using reduced graphene oxide (rGO) films as the transparent conductive coating, inorganic/organic hybrid nanostructure heterojunction photovoltaic devices have been fabricated through hydrothermal synthesis of vertically aligned ZnO nanorods (ZnO-NRs) and nanotubes (ZnO-NTs) on rGO films followed by the spin casting of a poly(3-hexylthiophene) (P3HT) film. The data show that larger interfacial area in ZnO-NT/P3HT composites improves the exciton dissociation and the higher electrode conductance of rGO films helps the power output. This study offers an alternative to manufacturing nanostructure heterojunction solar cells at low temperatures using potentially low cost materials.

  20. Fabrication and Testing of Thermoelectric CMOS-MEMS Microgenerators with CNCs Film

    Directory of Open Access Journals (Sweden)

    Yu-Wei Chen

    2018-06-01

    Full Text Available Manufacturing and testing of a TMG (thermoelectric microgenerator with CNCs (carbon nanocapsules film fabricated utilizing a CMOS (complementary metal oxide semiconductor technology are investigated. The microgenerator includes a CNCs layer, thermopiles, and thermometers. CNCs, a heat absorbing material, are coated on the microgenerator, so that the TD (temperature difference of HP (hot part and CP (cold part in the thermopiles increases, resulting in an enhancement of the microgenerator OP (output power. Thermometers fabricated in the microgenerator are employed to detect the HP and CP temperature in thermopiles. In order to enhance thermopiles’ TD, the HP in thermopiles was manufactured as suspension structures isolating heat dissipation, and the CP in thermopiles was made on a silicon substrate to increase the heat sink. Experiments showed that the microgenerator OV (output voltage was 3.3 mV and its output power was 125 pW at TD 3 K. Voltage and power factors of TMG were 0.71 mV/K/mm2 and 9.04 pW/K2/mm2, respectively.

  1. Effect of grain alignment on interface trap density of thermally oxidized aligned-crystalline silicon films

    Science.gov (United States)

    Choi, Woong; Lee, Jung-Kun; Findikoglu, Alp T.

    2006-12-01

    The authors report studies of the effect of grain alignment on interface trap density of thermally oxidized aligned-crystalline silicon (ACSi) films by means of capacitance-voltage (C-V) measurements. C-V curves were measured on metal-oxide-semiconductor (MOS) capacitors fabricated on ⟨001⟩-oriented ACSi films on polycrystalline substrates. From high-frequency C-V curves, the authors calculated a decrease of interface trap density from 2×1012to1×1011cm-2eV-1 as the grain mosaic spread in ACSi films improved from 13.7° to 6.5°. These results demonstrate the effectiveness of grain alignment as a process technique to achieve significantly enhanced performance in small-grained (⩽1μm ) polycrystalline Si MOS-type devices.

  2. Low-temperature metal-oxide thin-film transistors formed by directly photopatternable and combustible solution synthesis.

    Science.gov (United States)

    Rim, You Seung; Lim, Hyun Soo; Kim, Hyun Jae

    2013-05-01

    We investigated the formation of ultraviolet (UV)-assisted directly patternable solution-processed oxide semiconductor films and successfully fabricated thin-film transistors (TFTs) based on these films. An InGaZnO (IGZO) solution that was modified chemically with benzoylacetone (BzAc), whose chelate rings decomposed via a π-π* transition as result of UV irradiation, was used for the direct patterning. A TFT was fabricated using the directly patterned IGZO film, and it had better electrical characteristics than those of conventional photoresist (PR)-patterned TFTs. In addition, the nitric acid (HNO3) and acetylacetone (AcAc) modified In2O3 (NAc-In2O3) solution exhibited both strong UV absorption and high exothermic reaction. This method not only resulted in the formation of a low-energy path because of the combustion of the chemically modified metal-oxide solution but also allowed for photoreaction-induced direct patterning at low temperatures.

  3. Metal oxide semiconductor thin-film transistors for flexible electronics

    Energy Technology Data Exchange (ETDEWEB)

    Petti, Luisa; Vogt, Christian; Büthe, Lars; Cantarella, Giuseppe; Tröster, Gerhard [Electronics Laboratory, Swiss Federal Institute of Technology, Zürich (Switzerland); Münzenrieder, Niko [Electronics Laboratory, Swiss Federal Institute of Technology, Zürich (Switzerland); Sensor Technology Research Centre, University of Sussex, Falmer (United Kingdom); Faber, Hendrik; Bottacchi, Francesca; Anthopoulos, Thomas D. [Department of Physics and Centre for Plastic Electronics, Imperial College London, London (United Kingdom)

    2016-06-15

    The field of flexible electronics has rapidly expanded over the last decades, pioneering novel applications, such as wearable and textile integrated devices, seamless and embedded patch-like systems, soft electronic skins, as well as imperceptible and transient implants. The possibility to revolutionize our daily life with such disruptive appliances has fueled the quest for electronic devices which yield good electrical and mechanical performance and are at the same time light-weight, transparent, conformable, stretchable, and even biodegradable. Flexible metal oxide semiconductor thin-film transistors (TFTs) can fulfill all these requirements and are therefore considered the most promising technology for tomorrow's electronics. This review reflects the establishment of flexible metal oxide semiconductor TFTs, from the development of single devices, large-area circuits, up to entirely integrated systems. First, an introduction on metal oxide semiconductor TFTs is given, where the history of the field is revisited, the TFT configurations and operating principles are presented, and the main issues and technological challenges faced in the area are analyzed. Then, the recent advances achieved for flexible n-type metal oxide semiconductor TFTs manufactured by physical vapor deposition methods and solution-processing techniques are summarized. In particular, the ability of flexible metal oxide semiconductor TFTs to combine low temperature fabrication, high carrier mobility, large frequency operation, extreme mechanical bendability, together with transparency, conformability, stretchability, and water dissolubility is shown. Afterward, a detailed analysis of the most promising metal oxide semiconducting materials developed to realize the state-of-the-art flexible p-type TFTs is given. Next, the recent progresses obtained for flexible metal oxide semiconductor-based electronic circuits, realized with both unipolar and complementary technology, are reported. In

  4. Oxidation of ruthenium thin films using atomic oxygen

    Energy Technology Data Exchange (ETDEWEB)

    McCoy, A.P.; Bogan, J.; Brady, A.; Hughes, G.

    2015-12-31

    In this study, the use of atomic oxygen to oxidise ruthenium thin films is assessed. Atomic layer deposited (ALD) ruthenium thin films (~ 3 nm) were exposed to varying amounts of atomic oxygen and the results were compared to the impact of exposures to molecular oxygen. X-ray photoelectron spectroscopy studies reveal substantial oxidation of metallic ruthenium films to RuO{sub 2} at exposures as low as ~ 10{sup 2} L at 575 K when atomic oxygen was used. Higher exposures of molecular oxygen resulted in no metal oxidation highlighting the benefits of using atomic oxygen to form RuO{sub 2}. Additionally, the partial oxidation of these ruthenium films occurred at temperatures as low as 293 K (room temperature) in an atomic oxygen environment. - Highlights: • X-ray photoelectron spectroscopy study of the oxidation of Ru thin filmsOxidation of Ru thin films using atomic oxygen • Comparison between atomic oxygen and molecular oxygen treatments on Ru thin films • Fully oxidised RuO{sub 2} thin films formed with low exposures to atomic oxygen.

  5. Films based on oxidized starch and cellulose from barley.

    Science.gov (United States)

    El Halal, Shanise Lisie Mello; Colussi, Rosana; Deon, Vinícius Gonçalves; Pinto, Vânia Zanella; Villanova, Franciene Almeida; Carreño, Neftali Lenin Villarreal; Dias, Alvaro Renato Guerra; Zavareze, Elessandra da Rosa

    2015-11-20

    Starch and cellulose fibers were isolated from grains and the husk from barley, respectively. Biodegradable films of native starch or oxidized starches and glycerol with different concentrations of cellulose fibers (0%, 10% and 20%) were prepared. The films were characterized by morphological, mechanical, barrier, and thermal properties. Cellulose fibers isolated from the barley husk were obtained with 75% purity and high crystallinity. The morphology of the films of the oxidized starches, regardless of the fiber addition, was more homogeneous as compared to the film of the native starch. The addition of cellulose fibers in the films increased the tensile strength and decreased elongation. The water vapor permeability of the film of oxidized starch with 20% of cellulose fibers was lower than the without fibers. However the films with cellulose fibers had the highest decomposition with the initial temperature and thermal stability. The oxidized starch and cellulose fibers from barley have a good potential for use in packaging. The addition of cellulose fibers in starch films can contribute to the development of films more resistant that can be applied in food systems to maintain its integrity. Copyright © 2015 Elsevier Ltd. All rights reserved.

  6. Modifying of Cotton Fabric Surface with Nano-ZnO Multilayer Films by Layer-by-Layer Deposition Method

    Directory of Open Access Journals (Sweden)

    Sarıışık Merih

    2010-01-01

    Full Text Available Abstract ZnO nanoparticle–based multilayer nanocomposite films were fabricated on cationized woven cotton fabrics via layer-by-layer molecular self-assembly technique. For cationic surface charge, cotton fabrics were pretreated with 2,3-epoxypropyltrimethylammonium chloride (EP3MAC by pad-batch method. XPS and SEM were used to examine the deposited nano-ZnO multilayer films on the cotton fabrics. The nano-ZnO films deposited on cotton fabrics exhibited excellent antimicrobial activity against Staphylococcus aureus bacteria. The results also showed that the coated fabrics with nano-ZnO multilayer films enhanced the protection of cotton fabrics from UV radiation. Physical tests (tensile strength of weft and warp yarns, air permeability and whiteness values were performed on the fabrics before and after the treatment with ZnO nanoparticles to evaluate the effect of layer-by-layer (LbL process on cotton fabrics properties.

  7. Highly controllable and green reduction of graphene oxide to flexible graphene film with high strength

    International Nuclear Information System (INIS)

    Wan, Wubo; Zhao, Zongbin; Hu, Han; Gogotsi, Yury; Qiu, Jieshan

    2013-01-01

    Graphical abstract: Highly controllable and green reduction of GO to chemical converted graphene (CCG) was achieved with sodium citrate as a facile reductant. Self-assembly of the as-made CCG sheets results in a flexible CCG film, of which the tensile strength strongly depends on the deoxygenation degree of graphene sheets. - Highlights: • Graphene was synthesized by an effective and environmentally friendly approach. • We introduced a facile X-ray diffraction analysis method to investigate the reduction process from graphene oxide to graphene. • Flexible graphene films were prepared by self-assembly of the graphene sheets. • The strength of the graphene films depends on the reduction degree of graphene. - Abstract: Graphene film with high strength was fabricated by the assembly of graphene sheets derived from graphene oxide (GO) in an effective and environmentally friendly approach. Highly controllable reduction of GO to chemical converted graphene (CCG) was achieved with sodium citrate as a facile reductant, in which the reduction process was monitored by XRD analysis and UV–vis absorption spectra. Self-assembly of the as-made CCG sheets results in a flexible CCG film. This method may open an avenue to the easy and scalable preparation of graphene film with high strength which has promising potentials in many fields where strong, flexible and electrically conductive films are highly demanded

  8. Indium zinc oxide films deposited on PET by LF magnetron sputtering

    International Nuclear Information System (INIS)

    Kim, Eun Lyoung; Jung, Sang Kooun; Sohn, Sang Ho; Park, Duck Kyu

    2007-01-01

    Indium zinc oxide (IZO) has attracted much attention recently for use in transparent oxide films compared with the ITO film. We carried out the deposition of IZO on a polyethylene terapthalate (PET) substrate at room temperature by a low-frequency (LF) magnetron sputtering system. These films have amorphous structures with excellent electrical stability, surface uniformity and high optical transmittance. The effects of LF applied voltage and O 2 flow rate were investigated. The electrical and optical properties were studied. At optimal deposition conditions, thin films of IZO with a sheet resistance of 32 Ω/sq and an optical transmittance of over 80% in the visible spectrum range were achieved. The IZO thin films fabricated by this method do not require substrate heating during the film preparation of any additional post-deposition annealing treatment. The experimental results show that films with good qualities of surface morphology, transmittance and electrical conduction can be grown by the LF magnetron sputtering method on PET which is recommendable

  9. Fabrication and evaluation of green-light emitting Ta2O5:Er, Ce co-sputtered thin films

    Directory of Open Access Journals (Sweden)

    K. Miura

    2015-01-01

    Full Text Available Erbium and cerium co-doped tantalum-oxide (Ta2O5:Er, Ce thin films were fabricated using radio-frequency co-sputtering of Ta2O5, Er2O3, and CeO2 for the first time. Enhanced green-light emission due to Er3+ that seems to be sensitized by Ce3+ was observed from the film annealed at 900 °C for 20 min. From XRD measurements of the films, the β-Ta2O5 (orthorhombic, δ-Ta2O5 (hexagonal, and (201 Ta2O5 phases seem to be very important for obtaining green PL from them. Such Ta2O5:Er, Ce co-sputtered films can be used as high-refractive-index materials of autocloned photonic crystals that can be applied to novel green-light-emitting devices, and they will also be used as multi-functional coating films that can work both as anti-reflection and down-conversion films for realizing high-efficiency silicon solar cells.

  10. Fabrication and study of sol-gel ZnO films for use in Si-based heterojunction photovoltaic devices

    Directory of Open Access Journals (Sweden)

    Daniya Mukhamedshina

    2017-12-01

    Full Text Available This paper considers the use of zinc oxide thin films prepared via the sol-gel route as an n-type layer in heterojunction ZnO/Si solar cells. The ZnO films were prepared via a simple spin-coating technique using zinc acetate dihydrate as a zinc precursor, isopropanol as a solvent and monoethanolamine as a stabilizing agent. Optical, structural and morphological properties of ZnO were investigated for thin films grown from sol-gel solutions with different concentrations both on glass and silicon substrates. As such, a distribution of crystallite sizes and surface topology parameters corresponding to various zinc acetate dihydrate concentrations were obtained to elucidate optimal film deposition conditions. Correlation between thin film morphology and structural characteristics of ZnO thin films was made based on atomic-force microscopy studies. Finally, our results on fabrication, characterization and simulation of ZnO/Si heterojunctions for use as photovoltaic devices are presented. Although noticeable rectifying and photovoltaic properties were observed for Al/Si/ZnO/Ti/Au devices, there appears to exist a considerable room for device improvement with simulation studies suggesting that efficiencies of the order of 24% may be obtained for devices with optimal silicon wafer passivation, i.e. with lifetimes of the order of 1000 μs.

  11. Films of double oxides of zirconium and iron

    International Nuclear Information System (INIS)

    Kozik, V.V.; Borilo, L.P.; Shul'pekov, A.M.

    2000-01-01

    Films of double oxides of zirconium and iron were prepared by the method of precipitation from film-forming alcohol solutions of zirconium oxychloride and iron chloride with subsequent thermal treatment. Using the methods of X-ray phase and differential thermal analyses, conductometry and optical spectroscopy, basic chemical processes occurring in the film-forming solutions and during thermal treatment are studied alongside with phase composition and optical characteristics of the films prepared. The composition-property diagrams of the given system in a thin-film state are plotted [ru

  12. Low-temperature (200 C or below) fabrication of diamond films for electronic application

    International Nuclear Information System (INIS)

    Hiraki, A.

    2003-01-01

    Fabrication of Diamond (including Diamond Like Carbon: DLC) films as electronic materials, for example: to be used as electron-emitter, requires several following conditions. They are: 1 ) Low temperature fabrication (or deposition on several substrates and sometimes ones with low melting point, like glasses) below 400 C, 2) Wide area film deposition onto wide substrates of several square inches, like Si wafer and glass substrate, 3) Reproducible deposition of well defined film quality, 4) others. In these respects, we have initiated, in the author's laboratories at Osaka University and Kochi University of Technology, a quite new approach to satisfy the above requirements by using microwave plasma CVD under a magnetic field to be called as m agneto-active plasma CVD . The films fabricated by the magnets-active plasma CVD and also recently by cathodic arc methods combined with cur special nano-seeding method, have been utilized for electron emitter to exhibit very high efficiency. (Author)

  13. Growth of anodic oxide films on oxygen-containing niobium

    Energy Technology Data Exchange (ETDEWEB)

    Habazaki, H. [Graduate School of Engineering, Hokkaido University, Sapporo 060-8628 (Japan)]. E-mail: habazaki@eng.hokudai.ac.jp; Ogasawara, T. [Graduate School of Engineering, Hokkaido University, Sapporo 060-8628 (Japan); Konno, H. [Graduate School of Engineering, Hokkaido University, Sapporo 060-8628 (Japan); Shimizu, K. [University Chemical Laboratory, Keio University, Yokohama 223-8522 (Japan); Asami, K. [Institute for Materials Research, Tohoku University, Sendai 980-8577 (Japan); Saito, K. [Institute for Materials Research, Tohoku University, Sendai 980-8577 (Japan); Nagata, S. [Institute for Materials Research, Tohoku University, Sendai 980-8577 (Japan); Skeldon, P. [Corrosion and Protection Centre, School of Materials, The University of Manchester, P.O. Box 88, Manchester M60 1QD (United Kingdom); Thompson, G.E. [Corrosion and Protection Centre, School of Materials, The University of Manchester, P.O. Box 88, Manchester M60 1QD (United Kingdom)

    2005-09-20

    The present study is directed at understanding of the influence of oxygen in the metal on anodic film growth on niobium, using sputter-deposited niobium containing from about 0-52 at.% oxygen, with anodizing carried out at high efficiency in phosphoric acid electrolyte. The findings reveal amorphous anodic niobia films, with no significant effect of oxygen on the field strength, transport numbers, mobility of impurity species and capacitance. However, since niobium is partially oxidized due to presence of oxygen in the substrate, less charge is required to form the films, hence reducing the time to reach a particular film thickness and anodizing voltage. Further, the relative thickness of film material formed at the metal/film interface is increased by the incorporation of oxygen species into the films from the substrate, with an associated altered depth of incorporation of phosphorus species into the films.

  14. Photoconductivity of oxidized nanostructured PbTe(In) films

    International Nuclear Information System (INIS)

    Dobrovolsky, A A; Ryabova, L I; Khokhlov, D R; Dashevsky, Z M; Kasiyan, V A

    2009-01-01

    Photoconductivity of as-grown and oxidized nanocrystalline PbTe(In) films has been studied in the dc and ac modes at temperatures 4.2–300 K. The electric transport in the films is defined by two mechanisms: conductivity through barriers at grain boundaries and transport along inversion channels at the grain surface. Modification of the transport mechanisms induced by oxidation is considered. Relatively weak oxidation results in an increase in the contribution of grain barriers to conductivity followed by an enhancement of the photoconductivity amplitude. Instead, this contribution drops in the case of deep oxidation resulting in a photoresponse reduction. It is shown that the main mechanism of charge transport in deeply oxidized films at low temperatures is hopping along inversion channels at the grain surface. It is demonstrated that the photoconductive response of nanocrystalline materials may be optimized by variation of the oxidation level, measurement frequency and temperature

  15. Investigation of the Optoelectronic Properties of Ti-doped Indium Tin Oxide Thin Film

    Directory of Open Access Journals (Sweden)

    Nen-Wen Pu

    2015-09-01

    Full Text Available : In this study, direct-current magnetron sputtering was used to fabricate Ti-doped indium tin oxide (ITO thin films. The sputtering power during the 350-nm-thick thin-film production process was fixed at 100 W with substrate temperatures increasing from room temperature to 500 °C. The Ti-doped ITO thin films exhibited superior thin-film resistivity (1.5 × 10−4 Ω/cm, carrier concentration (4.1 × 1021 cm−3, carrier mobility (10 cm2/Vs, and mean visible-light transmittance (90% at wavelengths of 400–800 nm at a deposition temperature of 400 °C. The superior carrier concentration of the Ti-doped ITO alloys (>1021 cm−3 with a high figure of merit (81.1 × 10−3 Ω−1 demonstrate the pronounced contribution of Ti doping, indicating their high suitability for application in optoelectronic devices.

  16. Investigation of the Optoelectronic Properties of Ti-doped Indium Tin Oxide Thin Film.

    Science.gov (United States)

    Pu, Nen-Wen; Liu, Wei-Sheng; Cheng, Huai-Ming; Hu, Hung-Chun; Hsieh, Wei-Ting; Yu, Hau-Wei; Liang, Shih-Chang

    2015-09-21

    : In this study, direct-current magnetron sputtering was used to fabricate Ti-doped indium tin oxide (ITO) thin films. The sputtering power during the 350-nm-thick thin-film production process was fixed at 100 W with substrate temperatures increasing from room temperature to 500 °C. The Ti-doped ITO thin films exhibited superior thin-film resistivity (1.5 × 10 - ⁴ Ω/cm), carrier concentration (4.1 × 10 21 cm - ³), carrier mobility (10 cm²/Vs), and mean visible-light transmittance (90%) at wavelengths of 400-800 nm at a deposition temperature of 400 °C. The superior carrier concentration of the Ti-doped ITO alloys (>10 21 cm - ³) with a high figure of merit (81.1 × 10 - ³ Ω - ¹) demonstrate the pronounced contribution of Ti doping, indicating their high suitability for application in optoelectronic devices.

  17. Fabrication of Cerium Oxide and Uranium Oxide Microspheres for Space Nuclear Power Applications

    Energy Technology Data Exchange (ETDEWEB)

    Jeffrey A. Katalenich; Michael R. Hartman; Robert C. O' Brien

    2013-02-01

    Cerium oxide and uranium oxide microspheres are being produced via an internal gelation sol-gel method to investigate alternative fabrication routes for space nuclear fuels. Depleted uranium and non-radioactive cerium are being utilized as surrogates for plutonium-238 (Pu-238) used in radioisotope thermoelectric generators and for enriched uranium required by nuclear thermal rockets. While current methods used to produce Pu-238 fuels at Los Alamos National Laboratory (LANL) involve the generation of fine powders that pose a respiratory hazard and have a propensity to contaminate glove boxes, the sol-gel route allows for the generation of oxide microsphere fuels through an aqueous route. The sol-gel method does not generate fine powders and may require fewer processing steps than the LANL method with less operator handling. High-quality cerium dioxide microspheres have been fabricated in the desired size range and equipment is being prepared to establish a uranium dioxide microsphere production capability.

  18. Fabrication of silk fibroin film using centrifugal casting technique for corneal tissue engineering.

    Science.gov (United States)

    Lee, Min Chae; Kim, Dong-Kyu; Lee, Ok Joo; Kim, Jung-Ho; Ju, Hyung Woo; Lee, Jung Min; Moon, Bo Mi; Park, Hyun Jung; Kim, Dong Wook; Kim, Su Hyeon; Park, Chan Hum

    2016-04-01

    Films prepared from silk fibroin have shown potential as biomaterials in tissue engineering applications for the eye. Here, we present a novel process for fabrication of silk fibroin films for corneal application. In this work, fabrication of silk fibroin films was simply achieved by centrifugal force. In contrast to the conventional dry casting method, we carried out the new process in a centrifuge with a rotating speed of 4000 rpm, where centrifugal force was imposed on an aluminum tube containing silk fibroin solution. In the present study, we also compared the surface roughness, mechanical properties, transparency, and cell proliferation between centrifugal and dry casting method. In terms of surface morphology, films fabricated by the centrifugal casting have less surface roughness than those by the dry casting. For elasticity and transparency, silk fibroin films obtained from the centrifugal casting had favorable results compared with those prepared by dry casting. Furthermore, primary human corneal keratocytes grew better in films prepared by the centrifugal casting. Therefore, our results suggest that this new fabrication process for silk fibroin films offers important potential benefits for corneal tissue regeneration. © 2015 Wiley Periodicals, Inc.

  19. Fabrication of Yttria stabilized zirconia thin films on poroussubstrates for fuel cell applications

    Energy Technology Data Exchange (ETDEWEB)

    Leming, Andres [Univ. of California, Berkeley, CA (United States)

    2003-06-16

    A process for the deposition of yttria stabilized zirconia (YSZ) films, on porous substrates, has been developed. These films have possible applications as electrolyte membranes in fuel cells. The films were deposited from colloidal suspensions through the vacuum infiltration technique. Films were deposited on both fully sintered and partially sintered substrates. A critical cracking thickness for the films was identified and strategies are presented to overcome this barrier. Green film density was also examined, and a method for improving green density by changing suspension pH and surfactant was developed. A dependence of film density on film thickness was observed, and materials interactions are suggested as a possible cause. Non-shorted YSZ films were obtained on co-fired substrates, and a cathode supported solid oxide fuel cell was constructed and characterized.

  20. Deposition and characterisation of epitaxial oxide thin films for SOFCs

    KAUST Repository

    Santiso, José

    2010-10-24

    This paper reviews the recent advances in the use of thin films, mostly epitaxial, for fundamental studies of materials for solid oxide fuel cell (SOFC) applications. These studies include the influence of film microstructure, crystal orientation and strain in oxide ionic conducting materials used as electrolytes, such as fluorites, and in mixed ionic and electronic conducting materials used as electrodes, typically oxides with perovskite or perovskite-related layered structures. The recent effort towards the enhancement of the electrochemical performance of SOFC materials through the deposition of artificial film heterostructures is also presented. These thin films have been engineered at a nanoscale level, such as the case of epitaxial multilayers or nanocomposite cermet materials. The recent progress in the implementation of thin films in SOFC devices is also reported. © 2010 Springer-Verlag.

  1. Nanocomposite oxide thin films grown by pulsed energy beam deposition

    International Nuclear Information System (INIS)

    Nistor, M.; Petitmangin, A.; Hebert, C.; Seiler, W.

    2011-01-01

    Highly non-stoichiometric indium tin oxide (ITO) thin films were grown by pulsed energy beam deposition (pulsed laser deposition-PLD and pulsed electron beam deposition-PED) under low oxygen pressure. The analysis of the structure and electrical transport properties showed that ITO films with a large oxygen deficiency (more than 20%) are nanocomposite films with metallic (In, Sn) clusters embedded in a stoichiometric and crystalline oxide matrix. The presence of the metallic clusters induces specific transport properties, i.e. a metallic conductivity via percolation with a superconducting transition at low temperature (about 6 K) and the melting and freezing of the In-Sn clusters in the room temperature to 450 K range evidenced by large changes in resistivity and a hysteresis cycle. By controlling the oxygen deficiency and temperature during the growth, the transport and optical properties of the nanocomposite oxide films could be tuned from metallic-like to insulating and from transparent to absorbing films.

  2. Induced nano-scale self-formed metal-oxide interlayer in amorphous silicon tin oxide thin film transistors.

    Science.gov (United States)

    Liu, Xianzhe; Xu, Hua; Ning, Honglong; Lu, Kuankuan; Zhang, Hongke; Zhang, Xiaochen; Yao, Rihui; Fang, Zhiqiang; Lu, Xubing; Peng, Junbiao

    2018-03-07

    Amorphous Silicon-Tin-Oxide thin film transistors (a-STO TFTs) with Mo source/drain electrodes were fabricated. The introduction of a ~8 nm MoO x interlayer between Mo electrodes and a-STO improved the electron injection in a-STO TFT. Mo adjacent to the a-STO semiconductor mainly gets oxygen atoms from the oxygen-rich surface of a-STO film to form MoO x interlayer. The self-formed MoO x interlayer acting as an efficient interface modification layer could conduce to the stepwise internal transport barrier formation while blocking Mo atoms diffuse into a-STO layer, which would contribute to the formation of ohmic contact between Mo and a-STO film. It can effectively improve device performance, reduce cost and save energy for the realization of large-area display with high resolution in future.

  3. Layered Cu-based electrode for high-dielectric constant oxide thin film-based devices

    International Nuclear Information System (INIS)

    Fan, W.; Saha, S.; Carlisle, J.A.; Auciello, O.; Chang, R.P.H.; Ramesh, R.

    2003-01-01

    Ti-Al/Cu/Ta multilayered electrodes were fabricated on SiO 2 /Si substrates by ion beam sputtering deposition, to overcome the problems of Cu diffusion and oxidation encountered during the high dielectric constant (κ) materials integration. The Cu and Ta layers remained intact through the annealing in oxygen environment up to 600 deg. C. The thin oxide layer, formed on the Ti-Al surface, effectively prevented the oxygen penetration toward underneath layers. Complex oxide (Ba x Sr 1-x )TiO 3 (BST) thin films were grown on the layered Ti-Al/Cu/Ta electrodes using rf magnetron sputtering. The deposited BST films exhibited relatively high permittivity (150), low dielectric loss (0.007) at zero bias, and low leakage current -8 A/cm 2 at 100 kV/cm

  4. Anti-Oxidative and Antibacterial Self-Healing Edible Polyelectrolyte Multilayer Film in Fresh-Cut Fruits.

    Science.gov (United States)

    Liu, Xuefan; Han, Wei; Zhu, Yanxi; Xuan, Hongyun; Ren, Jiaoyu; Zhang, Jianhao; Ge, Liqin

    2018-04-01

    The consumption of fresh-cut fruits is limited because of the oxidation browning and pathogenic bacteria's growth on the fruit surface. Besides, crack of the fresh-keeping film may shorten the preservation time of fruit. In this work, polyelectrolyte multilayer (PEM) film was fabricated by layer-by-layer (LBL) electrostatic deposition method. The film was made by carboxy methylcellulose sodium (CMC) and chitosan (CS). The as-prepared PEM film had good anti-oxidative and antibacterial capability. It inhibited the growth of Gram-negative bacteria and the antibacterial rate was more than 95%. The stratified structure and linear increase of the absorbance in the film verified a linear increase of film thickness. The slight scratched film could self-heal rapidly after the stimulation of water whatever the layer number was. Moreover, the film could heal cracks whose width was far bigger than the thickness. The application of PEM film on fresh-cut apples showed that PEM film had good browning, weight loss and metabolic activity inhibition ability. These results showed that the PEM film is a good candidate as edible film in fresh-cut fruits applications.

  5. Flexible thin film circuitry enabling ubiquitous electronics via post-fabrication customization (Presentation Recording)

    Science.gov (United States)

    Cobb, Brian

    2015-09-01

    For decades, the electronics industry has been accurately described by Moore's Law, where the march towards increasing density and smaller feature sizes has enabled continuous cost reductions and performance improvements. With flexible electronics, this perpetual scaling is not foreseen to occur. Instead, the industry will be dominated by Wright's Law, first proposed in 1936, where increasing demand for high volumes of product will drive costs down. We have demonstrated thin film based circuitry compatible with flexible substrates with high levels of functionality designed for such a high volume industry. This includes a generic 8-bit microprocessor totaling more than 3.5k TFTs operating at 2.1 kHz. We have also developed a post fabrication programming technique via inkjet printing of conductive spots to form a one-time programmable instruction generator, allowing customization of the processor for a specific task. The combination demonstrates the possibility to achieve the high volume production of identical products necessary to reap the benefits promised by Wright's Law, while still retaining the individualization necessary for application differentiation. This is of particular importance in the area of item level identification via RFID, where low cost and individualized identification are necessary. Remotely powered RFID tags have been fabricated using an oxide semiconductor based TFT process. This process is compatible with the post-fabrication printing process to detail individual identification codes, with the goal of producing low cost, high volume flexible tags. The goal is to produce tags compatible with existing NFC communication protocols in order to communicate with readers that are already ubiquitous in the market.

  6. Fabrication of conducting polymer-gold nanoparticles film on electrodes using monolayer protected gold nanoparticles and its electrocatalytic application

    Energy Technology Data Exchange (ETDEWEB)

    Kannan, Palanisamy [Department of Chemistry, Gandhigram Rural University, Gandhigram 624 302, Dindigul (India); School of Chemical and Biomedical Engineering, N1.3, B4-01, 70 Nanyang Drive, Nanyang Technological University, Singapore 637457 (Singapore); John, S. Abraham, E-mail: abrajohn@yahoo.co.in [Department of Chemistry, Gandhigram Rural University, Gandhigram 624 302, Dindigul (India)

    2011-08-01

    We wish to report a simple and new strategy for the fabrication of gold nanoparticles-conducting polymer film on glassy carbon (GC) and indium tin oxide (ITO) surfaces using 5-amino-2-mercapto-1,3,4-thiadiazole capped gold nanoparticles (AMT-AuNPs) in 0.01 M H{sub 2}SO{sub 4} by electropolymerization. The presence of amine groups on the surface of the AuNPs was responsible for the deposition of the AMT-AuNPs film on the electrode surface. The atomic force microscopy (AFM) studies reveal that the fabricated p-AMT-AuNPs film showed homogeneously distributed AuNPs with a spherical shape of {approx}8 nm diameter. The XPS spectrum shows the binding energies at 83.8 and 87.5 eV in the Au 4f region corresponding to 4f{sub 7/2} and 4f{sub 5/2}, respectively. The position and difference between these two peaks (3.7 eV) exactly match the value reported for Au{sup 0}. The N1s XPS showed three binding energies at 396.7, 399.6 and 403.3 eV, corresponding to the =NH, -NH- and -N{sup +}H-, respectively, confirming that the electropolymerization proceeded through the oxidation of -NH{sub 2} groups present on the periphery of the AMT-AuNPs. The application of the present p-AMT-AuNPs modified electrode was demonstrated by studying the electro reduction of oxygen at pH 7.2. The p-AMT-AuNPs film enhanced the oxygen reduction current more than three times than that of p-AMT film prepared under identical conditions.

  7. Free standing graphene oxide film for hydrogen peroxide sensing

    Science.gov (United States)

    Ranjan, Pranay; Balakrishnan, Jayakumar; Thakur, Ajay D.

    2018-05-01

    We report hydrogen peroxide (H2O2)sensing using free standing graphene oxide thin films prepared using a cost effective scalable approach. Such sensors may find application in pharmaceutical and food processing industries.

  8. Multiferroic iron oxide thin films at room temperature

    Czech Academy of Sciences Publication Activity Database

    Gich, M.; Fina, I.; Morelli, Alessio; Sánchez, F.; Alexe, M.; Gazquez, J.; Fontcuberta, J.; Roig, A.

    2014-01-01

    Roč. 26, č. 27 (2014), s. 4645-4652 ISSN 0935-9648 Institutional support: RVO:68378271 Keywords : multiferroic * iron oxide * thin film Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 17.493, year: 2014

  9. Oxide film assisted dopant diffusion in silicon carbide

    Energy Technology Data Exchange (ETDEWEB)

    Tin, Chin-Che, E-mail: cctin@physics.auburn.ed [Department of Physics, Auburn University, Alabama 36849 (United States); Mendis, Suwan [Department of Physics, Auburn University, Alabama 36849 (United States); Chew, Kerlit [Department of Electrical and Electronic Engineering, Faculty of Engineering and Science, Universiti Tunku Abdul Rahman, Kuala Lumpur (Malaysia); Atabaev, Ilkham; Saliev, Tojiddin; Bakhranov, Erkin [Physical Technical Institute, Uzbek Academy of Sciences, 700084 Tashkent (Uzbekistan); Atabaev, Bakhtiyar [Institute of Electronics, Uzbek Academy of Sciences, 700125 Tashkent (Uzbekistan); Adedeji, Victor [Department of Chemistry, Geology and Physics, Elizabeth City State University, North Carolina 27909 (United States); Rusli [School of Electrical and Electronic Engineering, Nanyang Technological University (Singapore)

    2010-10-01

    A process is described to enhance the diffusion rate of impurities in silicon carbide so that doping by thermal diffusion can be done at lower temperatures. This process involves depositing a thin film consisting of an oxide of the impurity followed by annealing in an oxidizing ambient. The process uses the lower formation energy of silicon dioxide relative to that of the impurity-oxide to create vacancies in silicon carbide and to promote dissociation of the impurity-oxide. The impurity atoms then diffuse from the thin film into the near-surface region of silicon carbide.

  10. Oxide film assisted dopant diffusion in silicon carbide

    International Nuclear Information System (INIS)

    Tin, Chin-Che; Mendis, Suwan; Chew, Kerlit; Atabaev, Ilkham; Saliev, Tojiddin; Bakhranov, Erkin; Atabaev, Bakhtiyar; Adedeji, Victor; Rusli

    2010-01-01

    A process is described to enhance the diffusion rate of impurities in silicon carbide so that doping by thermal diffusion can be done at lower temperatures. This process involves depositing a thin film consisting of an oxide of the impurity followed by annealing in an oxidizing ambient. The process uses the lower formation energy of silicon dioxide relative to that of the impurity-oxide to create vacancies in silicon carbide and to promote dissociation of the impurity-oxide. The impurity atoms then diffuse from the thin film into the near-surface region of silicon carbide.

  11. Altering properties of cerium oxide thin films by Rh doping

    International Nuclear Information System (INIS)

    Ševčíková, Klára; Nehasil, Václav; Vorokhta, Mykhailo; Haviar, Stanislav; Matolín, Vladimír

    2015-01-01

    Highlights: • Thin films of ceria doped by rhodium deposited by RF magnetron sputtering. • Concentration of rhodium has great impact on properties of Rh–CeO x thin films. • Intensive oxygen migration in films with low concentration of rhodium. • Oxygen migration suppressed in films with high amount of Rh dopants. - Abstract: Ceria containing highly dispersed ions of rhodium is a promising material for catalytic applications. The Rh–CeO x thin films with different concentrations of rhodium were deposited by RF magnetron sputtering and were studied by soft and hard X-ray photoelectron spectroscopies, Temperature programmed reaction and X-ray powder diffraction techniques. The sputtered films consist of rhodium–cerium mixed oxide where cerium exhibits a mixed valency of Ce 4+ and Ce 3+ and rhodium occurs in two oxidation states, Rh 3+ and Rh n+ . We show that the concentration of rhodium has a great influence on the chemical composition, structure and reducibility of the Rh–CeO x thin films. The films with low concentrations of rhodium are polycrystalline, while the films with higher amount of Rh dopants are amorphous. The morphology of the films strongly influences the mobility of oxygen in the material. Therefore, varying the concentration of rhodium in Rh–CeO x thin films leads to preparing materials with different properties

  12. Fabrication and Performance Study of Uniform Thin Film Integrated ...

    African Journals Online (AJOL)

    The transmission line model of a uniform rectangular thin film R-C-KR structure consisting of a dielectric layer of constant per unit shunt capacitance C sandwiched between two resistive thin films of constant per unit length resistances R and KR has been analysed using the concept of matrix parameter functions. The above ...

  13. Multiferroicity in oxide thin films and heterostructures

    International Nuclear Information System (INIS)

    Glavic, Artur

    2012-01-01

    In this work a variety of different systems of transition metal oxides ABO 3 (perovskite materials, where B stands for a transition metal and A for a rare earth element) were produced as thin films and heterostructures and analyzed for the structural, magnetic and ferroelectric properties. For the epitaxial film preparation mostly pulse laser deposition (PLD) was applied. For one series high pressure oxide sputter deposition was used as well. The bulk multiferroics TbMnO 3 and DyMnO 3 , which develop their electric polarization due to a cycloidal magnetic order, have been prepared as single layers with thicknesses between 2 and 200 nm on YAlO 3 substrates using PLD and sputter deposition. The structural characterization of the surfaces and crystal structure where performed using X-ray reflectometry and diffraction, respectively. These yielded low surface roughness and good epitaxial growth. The magnetic behavior was macroscopically measured with SQUID magnetometry and microscopically with polarized neutron diffraction and resonant magnetic X-ray scattering. While all investigated samples showed antiferromagnetic order, comparable with the collinear magnetic phase of their bulk materials, only the sputter deposited samples exhibited the multiferroic low temperature cycloidal order. The investigation of the optical second harmonic generation in a TbMnO 3 sample could proof the presence of a ferroelectric order in the low temperature phase. The respective transition temperatures of the thin films have been very similar to those of the bulk materials. In contrast an increase in the rare earth ordering temperature has been observed, which reduces the Mn order slightly, an effect not known from bulk TbMnO 3 crystals. The coupling of the antiferromagnetic order in TbMnO 3 to ferromagnetic layers of LaCoO 3 was investigated in super-lattices containing 20 bilayers produced with PLD on the same substrates. The SQUID magnetometry yielded a strong influence of the

  14. Fabrication of molecular hybrid films of gold nanoparticle and polythiophene by covalent assembly

    Energy Technology Data Exchange (ETDEWEB)

    Sundaramurthy, Jayaraman, E-mail: jsu2@np.edu.sg [Department of Chemical & Biomolecular Engineering, National University of Singapore, Block E5, 4 Engineering Drive 4, 117576 (Singapore); Environmental & Water Technology Centre of Innovation, Ngee Ann Polytechnic, 599489 (Singapore); Dharmarajan, Rajarathnam [CERAR, University of South Australia, Mawson Lakes, SA 5095 (Australia); Srinivasan, M.P., E-mail: chesmp@nus.edu.sg [Department of Chemical & Biomolecular Engineering, National University of Singapore, Block E5, 4 Engineering Drive 4, 117576 (Singapore)

    2015-08-31

    This work demonstrates the fabrication of molecular hybrid films comprising gold nanoparticles (AuNPs) incorporated in covalently assembled, substituted polythiophene (poly(3-(2-bromoethoxy)ethoxymethylthiophene-2,5-diyl (PBrEEMT))) films by different surface chemistry routes. AuNPs are incorporated in the immobilized polythiophene matrix due to its affinity for amine and sulfur. The amount of AuNPs present depends on the nature of the incorporation, the extent of film coverage and interaction of thiophene and amine groups. PBrEEMT films functionalized with amine rich polyallylamine immobilize greater numbers of AuNPs due to more extensive gold–amine interactions. Covalent binding between AuNP and PBrEEMT films was accomplished by using pre-functionalised AuNPs (4-aminothiophenol functionalized AuNPs). Atomic force microscopy, field emission scanning electron microscopy and X-ray photoelectron spectroscopy were used to study the morphology and chemical constituents of assembled films. These approaches will pave the way for developing facile methods for nanoparticle incorporation and will also facilitate direct interaction of nanoparticles with the conducting polymer matrix and enhance the electrical properties of the films. - Highlights: • Covalent molecular assembly enabled the fabrication of molecular hybrid films. • Monomeric and polymeric species were employed as intermediate linkers. • Adopted approaches facilitated the direct interaction of gold nanoparticle in films. • The amount of nanoparticle incorporation depended on the extent of film coverage.

  15. Fabrication of hydroxyapatite thin films for biomedical applications using RF magnetron sputtering

    International Nuclear Information System (INIS)

    Yamaguchi, Tetsuro; Tanaka, Yoshikazu; Ide-Ektessabi, Ari

    2006-01-01

    The calcium phosphate thin films for medical applications require similar chemical properties as those of natural bone as well as a uniform surface without any defect, such as cracks and pinholes. In this study, the calcium phosphate thin films were fabricated using RF magnetron sputtering deposition technique at discharge power of 200W, 300W and 400W. The target used for the deposition was sintered HAp. RBS analysis showed that the Ca/P ratio increased with the discharge power becoming close to that of Ca/P=1.67 in ideal HAp. XPS analysis revealed the presence of PO 4 3- and OH - bonds in the calcium phosphate films fabricated. The chemical properties of the calcium phosphate thin films were similar to those of ideal HAp. The AFM results revealed that the thin films prepared had a uniform surface

  16. Fabrication of layered hydroxide zinc nitrate films and their conversion to ZnO nanosheet assemblies for use in dye-sensitized solar cells

    Directory of Open Access Journals (Sweden)

    Takuya Yuki

    2015-03-01

    Full Text Available Layered hydroxide zinc nitrate (LHZN; Zn5(NO32(OH8·xH2O films were fabricated on glass or plastic substrates by a chemical bath deposition method combined with a homogeneous precipitation in methanolic solutions. High- or low-temperature pyrolytic decomposition of the LHZN films having two-dimensional morphology was attempted to obtain porous ZnO nanosheet-assembly films. The LHZN films were converted into porous ZnO films by pyrolyzing at temperatures above 400 °C, while porous LHZN/ZnO hybrid films were obtained by pyrolyzing at a lower temperature of 120 °C without morphological changes. The pyrolyzed ZnO films were applied to dye-sensitized solar cells (DSSCs, resulting in the generation of relatively high open-circuit voltages. The low-temperature pyrolysis enabled us to fabricate the LHZN/ZnO film even on the plastic substrate. Actually a cell using the LHZN/ZnO film on an indium tin oxide-coated polyethylene naphthalate substrate showed an energy conversion efficiency of 2.08% with a high open-circuit voltage around 0.70 V.

  17. Thin film ionic conductors based on cerium oxide

    International Nuclear Information System (INIS)

    Haridoss, P.; Hellstrom, E.; Garzon, F.H.; Brown, D.R.; Hawley, M.

    1994-01-01

    Fluorite and perovskite structure cerium oxide based ceramics are a class of materials that may exhibit good oxygen ion and/or protonic conductivity. The authors have successfully deposited thin films of these materials on a variety of substrates. Interesting orientation relationships were noticed between cerium oxide films and strontium titanate bi-crystal substrates. Near lattice site coincidence theory has been used to study these relationships

  18. Y-Ba-Cu-O superconducting film on oxidized silicon

    International Nuclear Information System (INIS)

    Gupta, R.P.; Khokle, W.S.; Dubey, R.C.; Singhal, S.; Nagpal, K.C.; Rao, G.S.T.; Jain, J.D.

    1988-01-01

    We report thick superconducting films of Y-Ba-Cu-O on oxidized silicon substrates. The critical temperatures for onset and zero resistance are 96 and 77 K, respectively. X-ray diffraction analysis predicts 1, 2, 3 composition and orthorhombic phase of the film

  19. Determination of oxygen diffusion kinetics during thin film ruthenium oxidation

    NARCIS (Netherlands)

    Coloma Ribera, R.; van de Kruijs, Robbert Wilhelmus Elisabeth; Yakshin, Andrey; Bijkerk, Frederik

    2015-01-01

    In situ X-ray reflectivity was used to reveal oxygen diffusion kinetics for thermal oxidation of polycrystalline ruthenium thin films and accurate determination of activation energies for this process. Diffusion rates in nanometer thin RuO2 films were found to show Arrhenius behaviour. However, a

  20. Ellipsometric investigations of pyrolytically deposited thin indium oxide films

    International Nuclear Information System (INIS)

    Winkler, U.

    1980-01-01

    Ellipsometric measurements have been carried out of thin indium oxide films deposited pyrolytically on glass substrates. It was found that the roughness of the films affected the measuring results. Therefore, only after applying a two-layer model a reasonable interpretation of the measuring results became possible

  1. Synthesis and electrical characterization of Graphene Oxide films

    International Nuclear Information System (INIS)

    Yasin, Muhammad; Tauqeer, T.; Zaidi, Syed M.H.; San, Sait E.; Mahmood, Asad; Köse, Muhammet E.; Canimkurbey, Betul; Okutan, Mustafa

    2015-01-01

    In this work, we have synthesized Graphene Oxide (GO) using modified Hummers method and investigated its electrical properties using parallel plate impedance spectroscopic technique. Graphene Oxide films were prepared using drop casting method on Indium Tin Oxide (ITO) coated glass substrate. Atomic force microscopy was used to characterize the films' microstructure and surface topography. Electrical characterization was carried out using LCR meter in frequency regime (100 Hz to 10 MHz) at different temperatures. AC conductivity σ ac of the films was observed to be varied with angular frequency, ω as ω S , with S < 1. The electrical properties of GO were found to be both frequency and temperature dependent. Analysis showed that GO film contains direct current (DC) and Correlated Barrier Hopping (CBH) conductivity mechanisms at low and high frequency ranges, respectively. Photon absorption and transmittance capability in the visible range and excellent electrical parameters of solution processed Graphene Oxide suggest its suitability for the realization of low cost flexible organic solar cells and organic Thin Film Transistors, respectively. - Highlights: • Synthesize and electrical characterization of Graphene Oxide (GO) Film was undertaken. • Temperature dependent impedance spectroscopy was used for electrical analysis. • AFM was used to characterize films' microstructure and surface topography. • Electrical parameters were found to vary with both temperature and frequency. • GO showed DC and CBH conductivity mechanisms at low and high frequency, respectively

  2. Electrochemical investigations of ion-implanted oxide films

    International Nuclear Information System (INIS)

    Schultze, J.W.; Danzfuss, B.; Meyer, O.; Stimming, U.

    1985-01-01

    Oxide films (passive films) of 40-50 nm thickness were prepared by anodic polarization of hafnium and titanium electrodes up to 20 V. Multiple-energy ion implantation of palladium, iron and xenon was used in order to obtain modified films with constant concentration profiles of the implanted ions. Rutherford backscattering, X-ray photoelectron spectroscopy measurements and electrochemical charging curves prove the presence of implanted ions, but electrochemical and photoelectrochemical measurements indicate that the dominating effect of ion implantation is the disordering of the oxide film. The capacity of hafnium electrodes increases as a result of an increase in the dielectric constant D. For titanium the Schottky-Mott analysis shows that ion implantation causes an increase in D and the donor concentration N. Additional electronic states in the band gap which are created by the implantation improve the conductivity of the semiconducting or insulating films. This is seen in the enhancement of electron transfer reactions and its disappearance during repassivation and annealing. Energy changes in the band gap are derived from photoelectrochemical measurements; the absorption edge of hafnium oxide films decreases by approximately 2 eV because of ion implantation, but it stays almost constant for titanium oxide films. All changes in electrochemical behavior caused by ion implantation show little variation with the nature of the implanted ion. Hence the dominating effect seems to be a disordering of the oxide. (Auth.)

  3. A tunable hybrid metamaterial absorber based on vanadium oxide films

    International Nuclear Information System (INIS)

    Wen Qiye; Zhang Huaiwu; Yang Qinghui; Long Yang; Jing Yulan; Lin Yuan; Chen Zhi; Zhang Peixin

    2012-01-01

    A tunable hybrid metamaterial absorber (MA) in the microwave band was designed, fabricated and characterized. The hybrid MA was realized by incorporating a VO 2 film into the conventional resonant MA. By thermally triggering the insulator-metal phase transition of the VO 2 film, the impedance match condition was broken and a deep amplitude modulation of about 63.3% to the electromagnetic wave absorption was achieved. A moderate blue-shift of the resonance frequency was observed which is promising for practical applications. This VO 2 -based MA exhibits many advantages such as strong tunability, frequency agility, simple fabrication and ease of scaling to the terahertz band. (paper)

  4. Study of film graphene/graphene oxide obtained by partial reduction chemical of oxide graphite

    International Nuclear Information System (INIS)

    Gascho, J.L.S.; Costa, S.F.; Hoepfner, J.C.; Pezzin, S.H.

    2014-01-01

    This study investigated the morphology of graphene/graphene oxide film obtained by partial chemical reduction of graphite oxide (OG) as well as its resistance to solvents. Films of graphene/graphene oxide are great candidates for replacement of indium oxide doped with tin (ITO) in photoelectric devices. The OG was obtained from natural graphite, by Hummer's method modified, and its reduction is made by using sodium borohydride. Infrared spectroscopy analysis of Fourier transform (FTIR), Xray diffraction (XRD) and scanning electron microscopy, high-resolution (SEM/FEG) for the characterization of graphene/graphene oxide film obtained were performed. This film proved to be resilient, not dispersing in any of the various tested solvents (such as ethanol, acetone and THF), even under tip sonication, this resistance being an important property for the applications. Furthermore, the film had a morphology similar to that obtained by other preparation methods.(author)

  5. Tungsten oxide (WO3) thin films for application in advanced energy systems

    International Nuclear Information System (INIS)

    Gullapalli, S. K.; Vemuri, R. S.; Manciu, F. S.; Enriquez, J. L.; Ramana, C. V.

    2010-01-01

    Inherent processes in coal gasification plants produce hazardous hydrogen sulfide (H 2 S), which must be continuously and efficiently detected and removed before the fuel is used for power generation. An attempt has been made in this work to fabricate tungsten oxide (WO 3 ) thin films by radio-frequency reactive magnetron-sputter deposition. The impetus being the use of WO 3 films for H 2 S sensors in coal gasification plants. The effect of growth temperature, which is varied in the range of 30-500 deg. C, on the growth and microstructure of WO 3 thin films is investigated. Characterizations made using scanning electron microscopy (SEM) and x-ray diffraction (XRD) indicate that the effect of temperature is significant on the microstructure of WO 3 films. XRD and SEM results indicate that the WO 3 films grown at room temperature are amorphous, whereas films grown at higher temperatures are nanocrystalline. The average grain-size increases with increasing temperature. WO 3 films exhibit smooth morphology at growth temperatures ≤300 deg. C while relatively rough at >300 deg. C. The analyses indicate that the nanocrystalline WO 3 films grown at 100-300 deg. C could be the potential candidates for H 2 S sensor development for application in coal gasification systems.

  6. Ru nanostructure fabrication using an anodic aluminum oxide nanotemplate and highly conformal Ru atomic layer deposition

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Woo-Hee; Park, Sang-Joon; Son, Jong-Yeog; Kim, Hyungjun [Department of Material Science and Engineering, POSTECH Pohang University of Science and Technology, San 31, Hyoja-Dong, Nam-Gu, Pohang 790-784 (Korea, Republic of)

    2008-01-30

    We fabricated metallic nanostructures directly on Si substrates through a hybrid nanoprocess combining atomic layer deposition (ALD) and a self-assembled anodic aluminum oxide (AAO) nanotemplate. ALD Ru films with Ru(DMPD)(EtCp) as a precursor and O{sub 2} as a reactant exhibited high purity and low resistivity with negligible nucleation delay and low roughness. These good growth characteristics resulted in the excellent conformality for nanometer-scale vias and trenches. Additionally, AAO nanotemplates were fabricated directly on Si and Ti/Si substrates through a multiple anodization process. AAO nanotemplates with various hole sizes (30-100 nm) and aspect ratios (2:1-20:1) were fabricated by controlling the anodizing process parameters. The barrier layers between AAO nanotemplates and Si substrates were completely removed by reactive ion etching (RIE) using BCl{sub 3} plasma. By combining the ALD Ru and the AAO nanotemplate, Ru nanostructures with controllable sizes and shapes were prepared on Si and Ti/Si substrates. The Ru nanowire array devices as a platform for sensor devices exhibited befitting properties of good ohmic contact and high surface/volume ratio.

  7. Aluminum-doped zinc oxide thin films grown on various substrates using facing target sputtering system

    Science.gov (United States)

    Kim, Hwa-Min; Lee, Chang Hyun; Shon, Sun Young; Kim, Bong Hwan

    2017-11-01

    Aluminum-doped zinc oxide (AZO) films were fabricated on various substrates, such as glass, polyethylene naphthalate (PEN), and polyethylene terephthalate (PET), at room temperature using a facing target sputtering (FTS) system with hetero ZnO and Al2O3 targets, and their electrical and optical properties were investigated. The AZO film on glass exhibited compressive stress while the films on the plastic substrates showed tensile stress. These stresses negatively affected the crystalline quality of the AZO films, and it is suggested that the poor crystalline quality of the films may be related to the neutral Al-based defect complexes formed in the films; these complexes act as neutral impurity scattering centers. AZO films with good optoelectronic properties could be formed on the glass and plastic substrates by the FTS technique using the hetero targets. The AZO films deposited on the glass, PEN, and PET substrates showed very low resistivities, of 5.0 × 10-4 Ω cm, 7.0 × 10-4 Ω cm, and 7.4 × 10-4 Ω cm, respectively. Further, the figure merit of the AZO film formed on the PEN substrate in the visible range (400-700 nm) was significantly higher than that of the AZO film on PET and similar to that of the AZO film on glass. Finally, the average transmittances of the films in the visible range (400-700 nm) were 83.16% (on glass), 76.3% (on PEN), and 78.16% (on PET).

  8. Ablation of film stacks in solar cell fabrication processes

    Science.gov (United States)

    Harley, Gabriel; Kim, Taeseok; Cousins, Peter John

    2013-04-02

    A dielectric film stack of a solar cell is ablated using a laser. The dielectric film stack includes a layer that is absorptive in a wavelength of operation of the laser source. The laser source, which fires laser pulses at a pulse repetition rate, is configured to ablate the film stack to expose an underlying layer of material. The laser source may be configured to fire a burst of two laser pulses or a single temporally asymmetric laser pulse within a single pulse repetition to achieve complete ablation in a single step.

  9. Role of thermal analysis in uranium oxide fuel fabrication process

    International Nuclear Information System (INIS)

    Balaji Rao, Y.; Yadav, R.B.

    2006-01-01

    The present paper discusses the application of thermal analysis, particularly, differential thermal analysis (Dta) at various stages of fuel fabrication process. The useful role of Dta in knowing the decomposition pattern and calcination temperature of Adu along with de-nitration temperature is explained. The decomposition pattern depends upon the type of drying process adopted for wet ADU cake (ADU C). Also, the paper highlights the utility of DTA in determining the APS and SSA of UO 2+x and U 3 O 8 powders as an alternate technique. Further, the temperature difference (ΔT max ) between the two exothermic peaks obtained in UO 2+x powder oxidation is related to sintered density of UO 2 pellets. (author)

  10. Green approach for fabrication and applications of zinc oxide nanoparticles.

    Science.gov (United States)

    Kumar, Brajesh; Smita, Kumari; Cumbal, Luis; Debut, Alexis

    2014-01-01

    Zinc oxide nanoparticles (ZnO-NPs) are known to be one of the multifunctional inorganic compounds which are widely used in everyday applications. This study aims to fabricate ZnO-NPs using grapefruit (Citrus paradisi) peel extract with particle size ranging from 12 to 72 nm. Structural, morphological, and optical properties of the synthesized nanoparticles have been characterized by using UV-Vis spectrophotometer, TEM, DLS, and FTIR analysis. They show the significant photocatalytic degradation efficiency (>56%, 10 mg/L, 6 h) against methylene blue and antioxidant efficacy (≥80% for 1.2 mM) against 1,1-diphenyl-2-picrylhydrazyl. From the results obtained it is suggested that green ZnO-NPs could be used effectively in environmental safety applications and also can address future medical concerns.

  11. An anode with aluminum doped on zinc oxide thin films for organic light emitting devices

    International Nuclear Information System (INIS)

    Xu Denghui; Deng Zhenbo; Xu Ying; Xiao Jing; Liang Chunjun; Pei Zhiliang; Sun Chao

    2005-01-01

    Doped zinc oxides are attractive alternative materials as transparent conducting electrode because they are nontoxic and inexpensive compared with indium tin oxide (ITO). Transparent conducting aluminum-doped zinc oxide (AZO) thin films have been deposited on glass substrates by DC reactive magnetron sputtering method. Films were deposited at a substrate temperature of 150-bar o C in 0.03 Pa of oxygen pressure. The electrical and optical properties of the film with the Al-doping amount of 2 wt% in the target were investigated. For the 300-nm thick AZO film deposited using a ZnO target with an Al content of 2 wt%, the lowest electrical resistivity was 4x10 -4 Ωcm and the average transmission in the visible range 400-700 nm was more than 90%. The AZO film was used as an anode contact to fabricate organic light-emitting diodes. The device performance was measured and the current efficiency of 2.9 cd/A was measured at a current density of 100 mA/cm 2

  12. Vanadium oxide thin films and fibers obtained by acetylacetonate sol–gel method

    Energy Technology Data Exchange (ETDEWEB)

    Berezina, O.; Kirienko, D. [Department of Physical Engineering, Petrozavodsk State University, 185910 Petrozavodsk (Russian Federation); Pergament, A., E-mail: aperg@psu.karelia.ru [Department of Physical Engineering, Petrozavodsk State University, 185910 Petrozavodsk (Russian Federation); Stefanovich, G.; Velichko, A. [Department of Physical Engineering, Petrozavodsk State University, 185910 Petrozavodsk (Russian Federation); Zlomanov, V. [Department of Chemistry, Moscow State University, 119991 Moscow (Russian Federation)

    2015-01-01

    Vanadium oxide films and fibers have been fabricated by the acetylacetonate sol–gel method followed by annealing in wet nitrogen. The samples are characterized by X-ray diffraction and electrical conductivity measurements. The effects of a sol aging, the precursor decomposition and the gas atmosphere composition on the annealing process, structure and properties of the films are discussed. The two-stage temperature regime of annealing of amorphous films in wet nitrogen for formation of the well crystallized VO{sub 2} phase is chosen: 1) 25–550 °C and 2) 550–600 °C. The obtained films demonstrate the metal–insulator transition and electrical switching. Also, the effect of the polyvinylpyrrolidone additive concentration and electrospinning parameters on qualitative (absence of defects and gel drops) and quantitative (length and diameter) characteristics of vanadium oxide fibers is studied. - Highlights: • Vanadium oxide thin films and fibers are synthesized by sol–gel method. • The effect of annealing, atmosphere, time and electrospinning parameters is studied. • Produced VO{sub 2} structures exhibit metal–insulator transition and electrical switching.

  13. Magnetron sputtered transparent conductive zinc-oxide stabilized amorphous indium oxide thin films on polyethylene terephthalate substrates at ambient temperature

    International Nuclear Information System (INIS)

    Yan, Y.; Zhang, X.-F.; Ding, Y.-T.

    2013-01-01

    Amorphous transparent conducting zinc-oxide stabilized indium oxide thin films, named amorphous indium zinc oxide (a-IZO), were deposited by direct current magnetron sputtering at ambient temperature on flexible polyethylene terephthalate substrates. It has been demonstrated that the electrical resistivity could attain as low as ∼ 5 × 10 −4 Ω cm, which was noticeably lower than amorphous indium tin oxide films prepared at the same condition, while the visible transmittance exceeded 84% with the refractive index of 1.85–2.00. In our experiments, introduction of oxygen gas appeared to be beneficial to the improvement of the transparency and electrical conductivity. Both free carrier absorption and indirect transition were observed and Burstein–Moss effect proved a-IZO to be a degenerated amorphous semiconductor. However, the linear relation between the optical band gap and the band tail width which usually observed in covalent amorphous semiconductor such as a-Si:H was not conserved. Besides, porosity could greatly determine the resistivity and optical constants for the thickness variation at this deposition condition. Furthermore, a broad photoluminescence peak around 510 nm was identified when more than 1.5 sccm oxygen was introduced. - Highlights: ► Highly conducting amorphous zinc-oxide stabilized indium oxide thin films were prepared. ► The films were fabricated on polyethylene terephthalate at ambient temperature. ► Introduction of oxygen can improve the transparency and electrical conductivity. ► The linear relation between optical band gap and band tail width was not conserved

  14. Method for fabrication of crack-free ceramic dielectric films

    Energy Technology Data Exchange (ETDEWEB)

    Ma, Beihai; Narayanan, Manoj; Balachandran, Uthamalingam; Chao, Sheng; Liu, Shanshan

    2017-12-05

    The invention provides a process for forming crack-free dielectric films on a substrate. The process comprises the application of a dielectric precursor layer of a thickness from about 0.3 .mu.m to about 1.0 .mu.m to a substrate. The deposition is followed by low temperature heat pretreatment, prepyrolysis, pyrolysis and crystallization step for each layer. The deposition, heat pretreatment, prepyrolysis, pyrolysis and crystallization are repeated until the dielectric film forms an overall thickness of from about 1.5 .mu.m to about 20.0 .mu.m and providing a final crystallization treatment to form a thick dielectric film. The process provides a thick crack-free dielectric film on a substrate, the dielectric forming a dense thick crack-free dielectric having an overall dielectric thickness of from about 1.5 .mu.m to about 20.0 .mu.m.

  15. Method for fabrication of crack-free ceramic dielectric films

    Science.gov (United States)

    Ma, Beihai; Balachandran, Uthamalingam; Chao, Sheng; Liu, Shanshan; Narayanan, Manoj

    2014-02-11

    The invention provides a process for forming crack-free dielectric films on a substrate. The process comprise the application of a dielectric precursor layer of a thickness from about 0.3 .mu.m to about 1.0 .mu.m to a substrate. The deposition is followed by low temperature heat pretreatment, prepyrolysis, pyrolysis and crystallization step for each layer. The deposition, heat pretreatment, prepyrolysis, pyrolysis and crystallization are repeated until the dielectric film forms an overall thickness of from about 1.5 .mu.m to about 20.0 .mu.m and providing a final crystallization treatment to form a thick dielectric film. Also provided was a thick crack-free dielectric film on a substrate, the dielectric forming a dense thick crack-free dielectric having an overall dielectric thickness of from about 1.5 .mu.m to about 20.0 .mu.m.

  16. Fabrication and Photocatalytic Properties of ZnSe Nanorod Films

    Directory of Open Access Journals (Sweden)

    Jiajia Yin

    2016-01-01

    Full Text Available ZnSe nanorod films grown on fused quartz glass substrates via a simple two-step synthesis protocol were demonstrated to be environmentally safe and effective recyclable photocatalysts. These films showed greatly enhanced photocatalytic activity compared to pulsed laser deposition ZnSe films in the degradation of methyl orange dye solutions. The well-crystalized ZnSe nanorods had a length of 15 µm and a diameter of 200 nm and were densely grown on the substrate. The morphology, crystal structure, crystal phase, and photophysical properties of the ZnSe nanorod films were investigated using field-emission scanning electron microscopy (FE-SEM, UV-Vis spectroscopy, X-ray diffraction (XRD, transmission electron microscopy (TEM, and high resolution transmission electron microscopy (HRTEM.

  17. Tungsten Oxide and Polyaniline Composite Fabricated by Surfactant-Templated Electrodeposition and Its Use in Supercapacitors

    Directory of Open Access Journals (Sweden)

    Benxue Zou

    2014-01-01

    Full Text Available Composite nanostructures of tungsten oxide and polyaniline (PANI were fabricated on carbon electrode by electrocodeposition using sodium dodecylbenzene sulfonate (SDBS as the template. The morphology of the composite can be controlled by changing SDBS surfactant and aniline monomer concentrations in solution. With increasing concentration of aniline in surfactant solution, the morphological change from nanoparticles to nanofibers was observed. The nanostructured WO3/PANI composite exhibited enhanced capacitive charge storage with the specific capacitance of 201 F g−1 at 1.28 mA cm−2 in large potential window of -0.5~ 0.65 V versus SCE compared to the bulk composite film. The capacitance retained about 78% when the sweeping potential rate increased from 10 to 150 mV/s.

  18. Fabrication of high-quality single-crystal Cu thin films using radio-frequency sputtering.

    Science.gov (United States)

    Lee, Seunghun; Kim, Ji Young; Lee, Tae-Woo; Kim, Won-Kyung; Kim, Bum-Su; Park, Ji Hun; Bae, Jong-Seong; Cho, Yong Chan; Kim, Jungdae; Oh, Min-Wook; Hwang, Cheol Seong; Jeong, Se-Young

    2014-08-29

    Copper (Cu) thin films have been widely used as electrodes and interconnection wires in integrated electronic circuits, and more recently as substrates for the synthesis of graphene. However, the ultra-high vacuum processes required for high-quality Cu film fabrication, such as molecular beam epitaxy (MBE), restricts mass production with low cost. In this work, we demonstrated high-quality Cu thin films using a single-crystal Cu target and radio-frequency (RF) sputtering technique; the resulting film quality was comparable to that produced using MBE, even under unfavorable conditions for pure Cu film growth. The Cu thin film was epitaxially grown on an Al2O3 (sapphire) (0001) substrate, and had high crystalline orientation along the (111) direction. Despite the 10(-3) Pa vacuum conditions, the resulting thin film was oxygen free due to the high chemical stability of the sputtered specimen from a single-crystal target; moreover, the deposited film had >5× higher adhesion force than that produced using a polycrystalline target. This fabrication method enabled Cu films to be obtained using a simple, manufacturing-friendly process on a large-area substrate, making our findings relevant for industrial applications.

  19. Elucidation of the electrochromic mechanism of nanostructured iron oxides films

    Energy Technology Data Exchange (ETDEWEB)

    Garcia-Lobato, M.A.; Martinez, Arturo I.; Castro-Roman, M. [Center for Research and Advanced Studies of the National Polytechnic Institute, Cinvestav Campus Saltillo, Carr. Saltillo-Monterrey Km. 13, Ramos Arizpe, Coah. 25900 (Mexico); Perry, Dale L. [Mail Stop 70A1150, Lawrence Berkeley National Laboratory, University of California, Berkeley, CA 94720 (United States); Zarate, R.A. [Departamento de Fisica, Facultad de Ciencias, Universidad Catolica del Norte, Casilla 1280, Antofagasta (Chile); Escobar-Alarcon, L. (Departamento de Fisica, Instituto Nacional de Investigaciones Nucleares, A.P. 18-1027, 11801 Mexico)

    2011-02-15

    Nanostructured hematite thin films were electrochemically cycled in an aqueous solution of LiOH. Through optical, structural, morphological, and magnetic measurements, the coloration mechanism of electrochromic iron oxide thin films was elucidated. The conditions for double or single electrochromic behavior are given in this work. During the electrochemical cycling, it was found that topotactic transformations of hexagonal crystal structures are favored; i.e. {alpha}-Fe{sub 2}O{sub 3} to Fe(OH){sub 2} and subsequently to {delta}-FeOOH. These topotactic redox reactions are responsible for color changes of iron oxide films. (author)

  20. Porous Gold Films Fabricated by Wet-Chemistry Processes

    Directory of Open Access Journals (Sweden)

    Aymeric Pastre

    2016-01-01

    Full Text Available Porous gold films presented in this paper are formed by combining gold electroless deposition and polystyrene beads templating methods. This original approach allows the formation of conductive films (2 × 106 (Ω·cm−1 with tailored and interconnected porosity. The porous gold film was deposited up to 1.2 μm on the silicon substrate without delamination. An original zirconia gel matrix containing gold nanoparticles deposited on the substrate acts both as an adhesion layer through the creation of covalent bonds and as a seed layer for the metallic gold film growth. Dip-coating parameters and gold electroless deposition kinetics have been optimized in order to create a three-dimensional network of 20 nm wide pores separated by 20 nm thick continuous gold layers. The resulting porous gold films were characterized by GIXRD, SEM, krypton adsorption-desorption, and 4-point probes method. The process is adaptable to different pore sizes and based on wet-chemistry. Consequently, the porous gold films presented in this paper can be used in a wide range of applications such as sensing, catalysis, optics, or electronics.

  1. Fabrication of p-type conductivity in SnO{sub 2} thin films through Ga doping

    Energy Technology Data Exchange (ETDEWEB)

    Tsay, Chien-Yie, E-mail: cytsay@fcu.edu.tw; Liang, Shan-Chien

    2015-02-15

    Highlights: • P-type Ga-doped SnO{sub 2} semiconductor films were prepared by sol-gel spin coating. • Optical bandgaps of the SnO{sub 2}:Ga films are narrower than that of the SnO{sub 2} film. • SnO{sub 2}:Ga films exhibited p-type conductivity as Ga doping content higher than 10%. • A p-n heterojunction composed of p-type SnO{sub 2}:Ga and n-type ZnO:Al was fabricated. - Abstract: P-type transparent tin oxide (SnO{sub 2}) based semiconductor thin films were deposited onto alkali-free glass substrates by a sol-gel spin-coating method using gallium (Ga) as acceptor dopant. In this study, we investigated the influence of Ga doping concentration ([Ga]/[Sn] + [Ga] = 0%, 5%, 10%, 15%, and 20%) on the structural, optical and electrical properties of SnO{sub 2} thin films. XRD analysis results showed that dried Ga-doped SnO{sub 2} (SnO{sub 2}:Ga) sol-gel films annealed in oxygen ambient at 520 °C for 1 h exhibited only the tetragonal rutile phase. The average optical transmittance of as-prepared thin film samples was higher than 87.0% in the visible light region; the optical band gap energy slightly decreased from 3.92 eV to 3.83 eV with increases in Ga doping content. Hall effect measurement showed that the nature of conductivity of SnO{sub 2}:Ga thin films changed from n-type to p-type when the Ga doping level was 10%, and when it was at 15%, Ga-doped SnO{sub 2} thin films exhibited the highest mean hole concentration of 1.70 × 10{sup 18} cm{sup -3}. Furthermore, a transparent p-SnO{sub 2}:Ga (Ga doping level of 15%)/n-ZnO:Al (Al doping level of 2%) heterojunction was fabricated on alkali-free glass. The I-V curve measurement for the p-n heterojunction diode showed a typical rectifying characteristic with a forward turn-on voltage of 0.65 V.

  2. Role of electrolyte composition on structural, morphological and in-vitro biological properties of plasma electrolytic oxidation films formed on zirconium

    International Nuclear Information System (INIS)

    M, Sandhyarani; T, Prasadrao; N, Rameshbabu

    2014-01-01

    Highlights: • Uniform oxide films were formed on zirconium by plasma electrolytic oxidation. • Silicate in electrolyte alter the growth of m-ZrO 2 from (1 ¯ 11) to (2 0 0) orientation. • Addition of KOH to electrolyte improved the corrosion resistance of oxide films. • Silicon incorporated oxide films showed higher surface roughness and wettability. • Human osteosarcoma cells were strongly adhered and spreaded on all the oxide films. - Abstract: Development of oxide films on metallic implants with a good combination of corrosion resistance, bioactivity and cell adhesion can greatly improve its biocompatibility and functionality. Thus, the present work is aimed to fabricate oxide films on metallic Zr by plasma electrolytic oxidation (PEO) in methodically varied concentrations of phosphate, silicate and KOH based electrolyte systems using a pulsed DC power source. The oxide films fabricated on Zr are characterized for its phase composition, surface morphology, chemical composition, roughness, wettability, surface energy, corrosion resistance, apatite forming ability and osteoblast cell adhesion. Uniform films with thickness varying from 6 to 11 μm are formed. XRD patterns of all the PEO films showed the predominance of monoclinic zirconia phase. The film formed in phosphate + KOH electrolyte showed superior corrosion resistance, which can be ascribed to its pore free morphology. The films formed in silicate electrolyte showed higher apatite forming ability with good cell adhesion and spreading over its surface which is attributed to its superior surface roughness and wettability characteristics. Among the five different electrolyte systems employed in the present study, the PEO film formed in an electrolyte system with phosphate + silicate + KOH showed optimum corrosion resistance, apatite forming ability and biocompatibility

  3. Gasochromic performance of WO{sub 3}-nanorod thin films fabricated with an ArF excimer laser

    Energy Technology Data Exchange (ETDEWEB)

    Yaacob, M. H. [RMIT University, Melbourne (Australia); Universiti Putra Malaysia, Selangor (Malaysia); Ou, J. Z.; Wlodarski, W. [RMIT University, Melbourne (Australia); Kim, C. S.; Lee, J. Y. [KAIST, Daejon (Korea, Republic of); Kim, Y. H. [KIST, Seoul (Korea, Republic of); Oh, C. M.; Dhakal, K. P.; Kim, J. Y.; Kang, J. H. [University of Incheon, Incheon (Korea, Republic of)

    2012-02-15

    Thin films with tungsten trioxide (WO{sub 3}) nanorods were fabricated by using an ArF pulsed laser deposition system. Because the ArF excimer laser operates at a very short wavelength of 193 nm, short enough to expect strong absorption of the photons in the semiconductor oxide targets, and because the clusters incoming to the substrates have high momentum, we could build thin films with good surface morphology. Highly homogeneous arrays of nanorods with sizes mostly in the range of 30 - 40 nm were observed. The absorbance response towards hydrogen (H{sub 2}) gas was investigated for a WO{sub 3} film coated with 25-A-thick palladium (Pd). The Pd/WO{sub 3}-nanorod thin films exhibited excellent gasochromic response when measured in the visible-NIR range (400 - 1000 nm). As low as 0.06% H{sub 2} concentration was clearly sensed. A significant reversible absorbance change and fast recovery (<2 min) were observed when the films were exposed to H{sub 2} at different concentrations.

  4. UHV-cluster-tool for fabrication of thin film structures and transport- and noise properties of YBa2Cu3O7-δ grain boundary-SQUIDs

    International Nuclear Information System (INIS)

    Back, Christoph

    2007-01-01

    A UHV-thin-film-deposition system for the fabrication of thin film structures of metals and oxides was designed and optimized. For oxide materials, Pulsed Laser Deposition (PLD) was implemented. Epitaxial thin film growth can be analyzed during the PLD process by high-pressure RHEED (Reflection High-Energy Electron Diffraction). Furthermore layer-by-layer growth can be triggered by Pulsed Laser Intervall Deposition (PLiD). Heteroepitaxial multilayers can be fabricated automatically. Metal thin films can be grown by planar magnetron sputtering and by electron beam evaporation. Furthermore the system contains an rf-plasma source for surface cleaning and Ion Beam Etching (IBE). The three different deposition techniques are located in separate vacuum chambers which are connected by a central handling chamber allowing to combine all these processes in-situ. Furthermore superconducting quantum interference devices (SQUIDs) were fabricated out of epitaxially grown high-temperature superconducting YBa 2 Cu 3 O 7 -films on bicrystals. The SQUIDs were structured using a combined process of ion milling and chemical wet etching. By this combined etching process, edge signals that appear during imaging of flux quanta by low temperature scanning microscopy can be avoided. The transport- and noise properties of the SQUIDs were investigated. (orig.)

  5. The thermomechanical stability of micro-solid oxide fuel cells fabricated on anodized aluminum oxide membranes

    Science.gov (United States)

    Kwon, Chang-Woo; Lee, Jae-Il; Kim, Ki-Bum; Lee, Hae-Weon; Lee, Jong-Ho; Son, Ji-Won

    2012-07-01

    The thermomechanical stability of micro-solid oxide fuel cells (micro-SOFCs) fabricated on an anodized aluminum oxide (AAO) membrane template is investigated. The full structure consists of the following layers: AAO membrane (600 nm)/Pt anode/YSZ electrolyte (900 nm)/porous Pt cathode. The utilization of a 600-nm-thick AAO membrane significantly improves the thermomechanical stability due to its well-known honeycomb-shaped nanopore structure. Moreover, the Pt anode layer deposited in between the AAO membrane and the YSZ electrolyte preserves its integrity in terms of maintaining the triple-phase boundary (TPB) and electrical conductivity during high-temperature operation. Both of these results guarantee thermomechanical stability of the micro-SOFC and extend the cell lifetime, which is one of the most critical issues in the fabrication of freestanding membrane-type micro-SOFCs.

  6. Photoinduced hydrophobic surface of graphene oxide thin films

    International Nuclear Information System (INIS)

    Zhang Xiaoyan; Song Peng; Cui Xiaoli

    2012-01-01

    Graphene oxide (GO) thin films were deposited on transparent conducting oxide substrates and glass slides by spin coating method at room temperature. The wettability of GO thin films before and after ultraviolet (UV) irradiation was characterized with water contact angles, which increased from 27.3° to 57.6° after 3 h of irradiation, indicating a photo-induced hydrophobic surface. The UV–vis absorption spectra, Raman spectroscopy, X-ray photoelectron spectroscopy, and conductivity measurements of GO films before and after UV irradiation were taken to study the mechanism of photoinduced hydrophobic surface of GO thin films. It is demonstrated that the photoinduced hydrophobic surface is ascribed to the elimination of oxygen-containing functional groups on GO molecules. This work provides a simple strategy to control the wettability properties of GO thin films by UV irradiation. - Highlights: ► Photoinduced hydrophobic surface of graphene oxide thin films has been demonstrated. ► Elimination of oxygen-containing functional groups in graphene oxide achieved by UV irradiation. ► We provide novel strategy to control surface wettability of GO thin films by UV irradiation.

  7. Fabrication and characterization of MEMS-based PZT/PZT bimorph thick film vibration energy harvesters

    DEFF Research Database (Denmark)

    Xu, Ruichao; Lei, Anders; Dahl-Petersen, Christian

    2012-01-01

    We describe the fabrication and characterization of a significantly improved version of a microelectromechanical system-based PZT/PZT thick film bimorph vibration energy harvester with an integrated silicon proof mass; the harvester is fabricated in a fully monolithic process. The main advantage...... yield of 98%. The robust fabrication process allowed a high pressure treatment of the screen printed PZT thick films prior to sintering. The high pressure treatment improved the PZT thick film performance and increased the harvester power output to 37.1 μW at 1 g root mean square acceleration. We also...... characterize the harvester performance when only one of the PZT layers is used while the other is left open or short circuit....

  8. Effect of etching stop layer on characteristics of amorphous IGZO thin film transistor fabricated at low temperature

    Directory of Open Access Journals (Sweden)

    Xifeng Li

    2013-03-01

    Full Text Available Transparent bottom-gate amorphous Indium-Gallium-Zinc Oxide (a-IGZO thin-film transistors (TFTs had been successfully fabricated at relative low temperature. The influence of reaction gas ratio of N2O and SiH4 during the growth of etching stop layer (SiOx on the characteristics of a-IGZO TFTs was investigated. The transfer characteristics of the TFTs were changed markedly because active layer of a-IGZO films was modified by plasma in the growth process of SiOx. By optimizing the deposition parameters of etching stop layer process, a-IGZO TFTs were manufactured and exhibited good performance with a field-effect mobility of 8.5 cm2V-1s-1, a threshold voltage of 1.3 V, and good stability under gate bias stress of 20 V for 10000 s.

  9. Channel layer thickness dependence of In-Ti-Zn-O thin-film transistors fabricated using pulsed laser deposition

    International Nuclear Information System (INIS)

    Zhang, Q.; Shan, F. K.; Liu, G. X.; Liu, A.; Lee, W. J.; Shin, B. C.

    2014-01-01

    Amorphous indium-titanium-zinc-oxide (ITZO) thin-film transistors (TFTs) with various channel thicknesses were fabricated at room temperature by using pulsed laser deposition. The channel layer thickness (CLT) dependence of the TFTs was investigated. All the ITZO thin films were amorphous, and the surface roughnesses decreased slightly first and then increased with increasing CLT. With increasing CLT from 35 to 140 nm, the on/off current ratio and the field-effect mobility increased, and the subthreshold swing decreased. The TFT with a CLT of 210 nm exhibited the worst performance, while the ITZO TFT with a CLT of 140 nm exhibited the best performance with a subthreshold voltage of 2.86 V, a mobility of 53.9 cm 2 V -1 s -1 , a subthreshold swing of 0.29 V/decade and an on/off current ratio of 10 9 .

  10. Synthesis and characterization of zinc oxide thin films prepared by ...

    African Journals Online (AJOL)

    Zinc oxide thin films were prepared with ammonia/ammonium chloride buffer as the reaction moderating agent in the chemical bath deposition technique. An observable color change during the reaction due to variations in the reactants concentration indicated the existence of the cupric (CuO) and cuprous (Cu2O) oxides ...

  11. Synthesis and characterization of thermally oxidized ZnO films

    Indian Academy of Sciences (India)

    Administrator

    Synthesis and characterization of thermally oxidized ZnO films. A P RAMBU1,* and N IFTIMIE2 .... R. −. Δ. = = (1) where Ra is the sensor resistance in the air and Rg is the .... ple, Aida and coworkers (2006) reported that the total oxidation is ...

  12. High adhesion transparent conducting films using graphene oxide hybrid carbon nanotubes

    International Nuclear Information System (INIS)

    Da, Shi-Xun; Wang, Jie; Geng, Hong-Zhang; Jia, Song-Lin; Xu, Chun-Xia; Li, Lin-Ge; Shi, Pei-Pei; Li, Guangfen

    2017-01-01

    Graphical abstract: The GO hybrid CNTs to fabricate TCFs could dramatically enhance the conductivity, adhesion, flatness, and wettability of the films, all these improvements are advantageous for optoelectronic applications. - Highlights: • TCFs were fabricated using GO/CNT hybrid inks by a simple spray method. • Conductivity of TCFs was improved through the hybrid of GO/CNT, sheet resistance of TCFs was 146 Ω/sq at the transmittance of 86.0% when the ratio of GO/CNT got 1.5:1.0. • The flatness and wettability of TCFs were improved dramatically, which is advantageous for the solution-based processing of organic electronics for spraying and printing. • The adhesion of the TCFs increased dramatically with the raise of the ratio GO/CNT hybrid. - Abstract: Flexible transparent conducting films (TCFs) with carbon nanotubes (CNTs) have attracted more and more attention for their wide range of potential applications. While, there are still some problems to be solved on several aspects. In this study, a graphene oxide/carbon nanotube (GO/CNT) hybrid TCF was fabricated through the simple spray coating method. GO sheets were introduced to form new electron transporting channels. It was found that the best optoelectronic property films were fabricated when the ratio of GO/CNT is 1.5:1.0, which the sheet resistance of the film was found to be 146 Ω/sq at the transmittance of 86.0%. Due to the two-dimensional structure and the oxidation groups of GO sheets, flatness and wettability of the electrode surface was improved obviously. Adhesion factor of the TCFs was calculated by the change of transparent and sheet resistance after trial test, the addition of GO sheets enhanced the adhesion dramatically and the mechanism was analyzed. Improvements of conductivity, flatness, wettability and adhesion above are all advantageous for the solution-based processing of organic electronics for spraying and printing.

  13. High adhesion transparent conducting films using graphene oxide hybrid carbon nanotubes

    Energy Technology Data Exchange (ETDEWEB)

    Da, Shi-Xun; Wang, Jie; Geng, Hong-Zhang, E-mail: genghz@tjpu.edu.cn; Jia, Song-Lin; Xu, Chun-Xia; Li, Lin-Ge; Shi, Pei-Pei; Li, Guangfen

    2017-01-15

    Graphical abstract: The GO hybrid CNTs to fabricate TCFs could dramatically enhance the conductivity, adhesion, flatness, and wettability of the films, all these improvements are advantageous for optoelectronic applications. - Highlights: • TCFs were fabricated using GO/CNT hybrid inks by a simple spray method. • Conductivity of TCFs was improved through the hybrid of GO/CNT, sheet resistance of TCFs was 146 Ω/sq at the transmittance of 86.0% when the ratio of GO/CNT got 1.5:1.0. • The flatness and wettability of TCFs were improved dramatically, which is advantageous for the solution-based processing of organic electronics for spraying and printing. • The adhesion of the TCFs increased dramatically with the raise of the ratio GO/CNT hybrid. - Abstract: Flexible transparent conducting films (TCFs) with carbon nanotubes (CNTs) have attracted more and more attention for their wide range of potential applications. While, there are still some problems to be solved on several aspects. In this study, a graphene oxide/carbon nanotube (GO/CNT) hybrid TCF was fabricated through the simple spray coating method. GO sheets were introduced to form new electron transporting channels. It was found that the best optoelectronic property films were fabricated when the ratio of GO/CNT is 1.5:1.0, which the sheet resistance of the film was found to be 146 Ω/sq at the transmittance of 86.0%. Due to the two-dimensional structure and the oxidation groups of GO sheets, flatness and wettability of the electrode surface was improved obviously. Adhesion factor of the TCFs was calculated by the change of transparent and sheet resistance after trial test, the addition of GO sheets enhanced the adhesion dramatically and the mechanism was analyzed. Improvements of conductivity, flatness, wettability and adhesion above are all advantageous for the solution-based processing of organic electronics for spraying and printing.

  14. Electrochemical reaction of lithium with orthorhombic bismuth tungstate thin films fabricated by radio-frequency sputtering

    International Nuclear Information System (INIS)

    Li Chilin; Sun Ke; Yu Le; Fu Zhengwen

    2009-01-01

    Bi 2 WO 6 thin films with fast deposition rate have been fabricated by radio-frequency (R.F.) sputtering deposition, and are used as positive electrodes in rechargeable thin film lithium batteries. An initial discharge capacity of 113 μAh/cm 2 -μm is obtainable for Bi 2 WO 6 film electrode with good capacity reversibility. A multiple-center reactive mechanism associated with both Bi 3+ /Bi 0 and W 6+ /W x+ (x 2 WO 6 electrochemical performance with those of Bi 2 O 3 and WO 3 thin films. A possible explanation about smooth capacity loss of Bi 2 WO 6 after long-term cycling is suggested from the incomplete reaction of Bi component. The advantages of Bi 2 WO 6 thin films over the singer-center Bi 2 O 3 or WO 3 thin films are shown in both the aspects of volumetric capacity and cycling life.

  15. Antimicrobial activity of biopolymer–antibiotic thin films fabricated by advanced pulsed laser methods

    Energy Technology Data Exchange (ETDEWEB)

    Cristescu, R., E-mail: rodica.cristescu@inflpr.ro [National Institute for Lasers, Plasma and Radiation Physics, Lasers Department, P.O. Box MG-36, Bucharest-Magurele (Romania); Popescu, C.; Dorcioman, G.; Miroiu, F.M.; Socol, G.; Mihailescu, I.N. [National Institute for Lasers, Plasma and Radiation Physics, Lasers Department, P.O. Box MG-36, Bucharest-Magurele (Romania); Gittard, S.D.; Miller, P.R.; Narayan, R.J. [Biomedical Engineering, University of North Carolina and North Carolina State University, Chapel Hill, NC 27599-7575 (United States); Enculescu, M. [National Institute for Materials Physics, PO Box MG-7, Bucharest-Magurele (Romania); Chrisey, D.B. [Tulane University, Department of Physics and Engineering Physics, New Orleans, LA (United States)

    2013-08-01

    We report on thin film deposition by matrix assisted pulsed laser evaporation (MAPLE) of two polymer–drug composite thin film systems. A pulsed KrF* excimer laser source (λ = 248 nm, τ = 25 ns, ν = 10 Hz) was used to deposit composite thin films of poly(D,L-lactide) (PDLLA) containing several gentamicin concentrations. FTIR spectroscopy was used to demonstrate that MAPLE-transferred materials exhibited chemical structures similar to those of drop cast materials. Scanning electron microscopy data indicated that MAPLE may be used to fabricate thin films of good morphological quality. The activity of PDLLA–gentamicin composite thin films against Staphylococcus aureus bacteria was demonstrated using drop testing. The influence of drug concentration on microbial viability was also assessed. Our studies indicate that polymer–drug composite thin films prepared by MAPLE may be used to impart antimicrobial activity to implants, medical devices, and other contact surfaces.

  16. Fabrication and optical properties of SnS thin films by SILAR method

    International Nuclear Information System (INIS)

    Ghosh, Biswajit; Das, Madhumita; Banerjee, Pushan; Das, Subrata

    2008-01-01

    Although the fabrication of tin disulfide thin films by SILAR method is quiet common, there is, however, no report is available on the growth of SnS thin film using above technique. In the present work, SnS films of 0.20 μm thickness were grown on glass and ITO substrates by SILAR method using SnSO 4 and Na 2 S solution. The as-grown films were smooth and strongly adherent to the substrate. XRD confirmed the deposition of SnS thin films. Scanning electron micrograph revealed almost equal distribution of the particle size well covered on the surface of the substrate. EDAX showed that as-grown SnS films were slightly rich in tin component while UV-vis transmission spectra exhibited high absorption in the visible region. The intense and sharp emission peaks at 680 and 825 nm (near band edge emission) dominated the photoluminescence spectra

  17. Fabrication and characterization of implantable and flexible nerve cuff electrodes with Pt, Ir and IrOx films deposited by RF sputtering

    International Nuclear Information System (INIS)

    Lee, Soo Hyun; Jung, Jung Hwan; Chae, Youn Mee; Kang, Ji Yoon; Suh, Jun-Kyo Francis

    2010-01-01

    This paper presents the fabrication and characterization of implantable and flexible nerve cuff electrodes for neural interfaces using the conventional BioMEMS technique. In order to fabricate a flexible nerve electrode, polyimide (PI) was chosen as the substrate material. Then, nerve electrodes were thermally re-formed in a cuff shape so as to increase the area in which the charges were transferred to the nerve. Platinum (Pt), iridium (Ir) and iridium oxide (IrO x ) films, which were to serve as conducting materials for the nerve electrodes, were deposited at different working pressures by RF magnetron sputtering. The electrochemical properties of the deposited films were characterized by electrochemical impedance spectroscopy (EIS). The charge delivery capacities of the films were recorded and calculated by cyclic voltammetry (CV). The deposited films of Pt, Ir and IrO x have strong differences in electrochemical properties, which depend on the working pressure of sputter. Each film deposited at 30 mTorr of working pressure shows the highest value of charge delivery capacity (CDC). For the IrO x films, the electrochemical properties were strongly affected by the working pressure as well as the Ar:O 2 gas ratio. The IrO x film deposited with an Ar:O 2 gas ratio of 8:1 showed the highest CDC of 59.5 mC cm −2 , which was about five times higher than that of films deposited with a 1:1 gas ratio.

  18. Determination of oxygen diffusion kinetics during thin film ruthenium oxidation

    Energy Technology Data Exchange (ETDEWEB)

    Coloma Ribera, R., E-mail: r.colomaribera@utwente.nl; Kruijs, R. W. E. van de; Yakshin, A. E.; Bijkerk, F. [MESA+ Institute for Nanotechnology, University of Twente, P.O. Box 217, 7500 AE Enschede (Netherlands)

    2015-08-07

    In situ X-ray reflectivity was used to reveal oxygen diffusion kinetics for thermal oxidation of polycrystalline ruthenium thin films and accurate determination of activation energies for this process. Diffusion rates in nanometer thin RuO{sub 2} films were found to show Arrhenius behaviour. However, a gradual decrease in diffusion rates was observed with oxide growth, with the activation energy increasing from about 2.1 to 2.4 eV. Further exploration of the Arrhenius pre-exponential factor for diffusion process revealed that oxidation of polycrystalline ruthenium joins the class of materials that obey the Meyer-Neldel rule.

  19. Topological properties and functionalities in oxide thin films and interfaces

    Science.gov (United States)

    Uchida, Masaki; Kawasaki, Masashi

    2018-04-01

    As symbolized by the Nobel Prize in Physics 2016, ‘topology’ has been recognized as an essential standpoint to understand and control the physics of condensed matter. This concept may be spreading even into application areas such as novel electronics. In this trend, there has been reported a number of studies for oxide films and heterostructures with topologically non-trivial electronic or magnetic states. In this review, we overview the trends of new topological properties and functionalities in oxide materials by sorting out a number of examples. The technological advances in oxide film growth achieved over the last few decades are now opening the door for harnessing novel topological properties.

  20. Fabrication and characterization of well-aligned zinc oxide nanowire arrays and their realizations in Schottky-device applications

    Energy Technology Data Exchange (ETDEWEB)

    Wong, Kin Mun; Grote, Fabian; Sun, Hui; Lei, Yong [Institute of Materials Physics, Center for Nanotechnology, University of Muenster (Germany); Wen, Liaoyong; Fang, Yaoguo [Institute of Nanochemistry and Nanobiology, Shanghai University, Shanghai 201800 (China)

    2011-07-01

    Highly ordered arrays of vertical zinc oxide (ZnO) nanowires (NWs) or nanopores were fabricated in our group by first thermal evaporating a thin film of gold on the ultrathin alumina membrane (UTAM). The UTAM was then utilized as a substrate for the growth of the ordered arrays using a chemical vapour deposition (CVD) process. Alternatively, a modified CVD process was also used to fabricate ultra-long ZnO NWs with the length of the nanowire exceeding 100 micrometres. Subsequently, densely packed arrays of ZnO NWs Schottky diodes were synthesized by transferring the long NWs on a substrate using a dry contact printing method and the electrical contacts were made on the NWs with a photolithographic process. The interesting electrical properties of the ZnO NWs, diodes or other metal oxide NWs such as the field emission, electron transport and piezoelectric properties were characterized by current-voltage or by other appropriate measurements.

  1. Characterization of piesoelectric ZnO thin films and the fabrication of piezoelectric micro-cantilevers

    Energy Technology Data Exchange (ETDEWEB)

    Johnson, Raegan Lynn [Iowa State Univ., Ames, IA (United States)

    2005-01-01

    In Atomic Force Microscopy (AFM), a microcantilever is raster scanned across the surface of a sample in order to obtain a topographical image of the sample's surface. In a traditional, optical AFM, the sample rests on a bulk piezoelectric tube and a control loop is used to control the tip-sample separation by actuating the piezo-tube. This method has several disadvantages--the most noticeable one being that response time of the piezo-tube is rather long which leads to slow imaging speeds. One possible solution aimed at improving the speed of imaging is to incorporate a thin piezoelectric film on top of the cantilever beam. This design not only improves the speed of imaging because the piezoelectric film replaces the piezo-tube as an actuator, but the film can also act as a sensor. In addition, the piezoelectric film can excite the cantilever beam near its resonance frequency. This project aims to fabricate piezoelectric microcantilevers for use in the AFM. Prior to fabricating the cantilevers and also part of this project, a systematic study was performed to examine the effects of deposition conditions on the quality of piezoelectric ZnO thin films deposited by RF sputtering. These results will be presented. The deposition parameters that produced the highest quality ZnO film were used in the fabrication of the piezoelectric cantilevers. Unfortunately, the fabricated cantilevers warped due to the intrinsic stress of the ZnO film and were therefore not usable in the AFM. The complete fabrication process will be detailed, the results will be discussed and reasons for the warping will be examined.

  2. Aqueous-Based Fabrication of Low-VOC Nanostructured Block Copolymer Films as Potential Marine Antifouling Coatings.

    Science.gov (United States)

    Kim, Kris S; Gunari, Nikhil; MacNeil, Drew; Finlay, John; Callow, Maureen; Callow, James; Walker, Gilbert C

    2016-08-10

    The ability to fabricate nanostructured films by exploiting the phenomenon of microphase separation has made block copolymers an invaluable tool for a wide array of coating applications. Standard approaches to engineering nanodomains commonly involve the application of organic solvents, either through dissolution or annealing protocols, resulting in the release of volatile organic compounds (VOCs). In this paper, an aqueous-based method of fabricating low-VOC nanostructured block copolymer films is presented. The reported procedure allows for the phase transfer of water insoluble triblock copolymer, poly(styrene-block-2 vinylpyridine-block-ethylene oxide) (PS-b-P2VP-b-PEO), from a water immiscible phase to an aqueous environment with the assistance of a diblock copolymeric phase transfer agent, poly(styrene-block-ethylene oxide) (PS-b-PEO). Phase transfer into the aqueous phase results in self-assembly of PS-b-P2VP-b-PEO into core-shell-corona micelles, which are characterized by dynamic light scattering techniques. The films that result from coating the micellar solution onto Si/SiO2 surfaces exhibit nanoscale features that disrupt the ability of a model foulant, a zoospore of Ulva linza, to settle. The multilayered architecture consists of a pH-responsive P2VP-"shell" which can be stimulated to control the size of these features. The ability of these nanostructured thin films to resist protein adsorption and serve as potential marine antifouling coatings is supported through atomic force microscopy (AFM) and analysis of the settlement of Ulva linza zoospore. Field trials of the surfaces in a natural environment show the inhibition of macrofoulants for 1 month.

  3. Electrochromic properties of bipolar pulsed magnetron sputter deposited tungsten–molybdenum oxide films

    Energy Technology Data Exchange (ETDEWEB)

    Lin, Tai-Nan [Chemical Engineering Division, Institute of Nuclear Energy Research, Taoyuan 325, Taiwan, ROC (China); Lin, Yi Han; Lee, Chin Tan [Department of Electronic Engineering, National Quemoy University, Kinmen 892, Taiwan, ROC (China); Han, Sheng [Center of General Education, National Taichung Institute of Technology, Taichung 404, Taiwan, ROC (China); Weng, Ko-Wei, E-mail: kowei@nqu.edu.tw [Department of Electronic Engineering, National Quemoy University, Kinmen 892, Taiwan, ROC (China)

    2015-06-01

    There are great interests in electrochromic technology for smart windows and displays over past decades. In this study, the WMoO{sub x} thin films were deposited onto indium tin oxide glass and silicon substrates by pulsed magnetron sputter system with W and Mo targets. The films were deposited with fixed W target power while the variant parameter of Mo target power in the range 50, 100, 150 and 200 W was investigated. The working pressure was fixed at 1.33 Pa with a gas mixture of Ar (30 sccm) and O{sub 2} (15 sccm). The film thickness increased with the Mo target power. Higher plasma power resulted in a crystalline structure which would reduce the electrochromic property of the film. The influence of plasma powers applied to Mo target on the structural, optical and electrochromic properties of the WMoO{sub x} thin films has been investigated. WMoO{sub x} films grown at Mo target powers less than 100 W were found to be amorphous. The films deposited at 150 W, which is the optimal fabrication condition, exhibit better electrochromic properties with high optical modulation, high coloration efficiency and less color memory effect at wavelength 400, 550 and 800 nm. The improvement resulted from the effect of doping Mo has been tested. The maximum ΔT (%) values are 36.6% at 400 nm, 65.6% at 550 nm, and 66.6% at 800 nm for pure WO{sub 3} film. The addition of Mo content in the WMoO{sub x} films provides better resistance to the short wavelength light source and can be used in the concerned application. - Highlights: • WMoO{sub x} films are deposited by pulsed magnetron sputter with pure W and Mo targets. • Mo addition in WMoO{sub x} provides better resistance to short wavelength light source. • WMoO{sub x} films exhibit electrochemical stability in the cycling test.

  4. The Impact of Graphene on the Fabrication of Thin Film Solar Cells: Current Status and Future Prospects

    Directory of Open Access Journals (Sweden)

    Zhengqi Shi

    2017-12-01

    Full Text Available Commercial solar cells have a power conversion efficiency (PCE in the range of 10–22% with different light absorbers. Graphene, with demonstrated unique structural, physical, and electrical properties, is expected to bring the positive effects on the development of thin film solar cells. Investigations have been carried out to understand whether graphene can be used as a front and back contacts and active interfacial layer in solar cell fabrication. In this review, the current progress of this research is analyzed, starting from the graphene and graphene-based Schottky diode. Also, the discussion was focused on the progress of graphene-incorporated thin film solar cells that were fabricated with different light absorbers, in particular, the synthesis, fabrication, and characterization of devices. The effect of doping and layer thickness of graphene on PCE was also included. Currently, the PCE of graphene-incorporated bulk-heterojunction devices have enhanced in the range of 0.5–3%. However, device durability and cost-effectiveness are also the challenging factors for commercial production of graphene-incorporated solar cells. In addition to the application of graphene, graphene oxides have been also used in perovskite solar cells. The current needs and likely future investigations for graphene-incorporated solar cells are also discussed.

  5. Low-temperature growth and electronic structures of ambipolar Yb-doped zinc tin oxide transparent thin films

    Science.gov (United States)

    Oh, Seol Hee; Ferblantier, Gerald; Park, Young Sang; Schmerber, Guy; Dinia, Aziz; Slaoui, Abdelilah; Jo, William

    2018-05-01

    The compositional dependence of the crystal structure, optical transmittance, and surface electric properties of the zinc tin oxide (Zn-Sn-O, shortened ZTO) thin films were investigated. ZTO thin films with different compositional ratios were fabricated on glass and p-silicon wafers using radio frequency magnetron sputtering. The binding energy of amorphous ZTO thin films was examined by a X-ray photoelectron spectroscopy. The optical transmittance over 70% in the visible region for all the ZTO films was observed. The optical band gap of the ZTO films was changed as a result of the competition between the Burstein-Moss effect and renormalization. An electron concentration in the films and surface work function distribution were measured by a Hall measurement and Kelvin probe force microscopy, respectively. The mobility of the n- and p-type ZTO thin films have more than 130 cm2/V s and 15 cm2/V s, respectively. We finally constructed the band structure which contains band gap, work function, and band edges such as valence band maximum and conduction band minimum of ZTO thin films. The present study results suggest that the ZTO thin film is competitive compared with the indium tin oxide, which is a representative material of the transparent conducting oxides, regarding optoelectronic devices applications.

  6. Rapid fabrication of hierarchically structured supramolecular nanocomposite thin films in one minute

    Energy Technology Data Exchange (ETDEWEB)

    Xu, Ting; Kao, Joseph

    2016-11-08

    Functional nanocomposites containing nanoparticles of different chemical compositions may exhibit new properties to meet demands for advanced technology. It is imperative to simultaneously achieve hierarchical structural control and to develop rapid, scalable fabrication to minimize degradation of nanoparticle properties and for compatibility with nanomanufacturing. The assembly kinetics of supramolecular nanocomposite in thin films is governed by the energetic cost arising from defects, the chain mobility, and the activation energy for inter-domain diffusion. By optimizing only one parameter, the solvent fraction in the film, the assembly kinetics can be precisely tailored to produce hierarchically structured thin films of supramolecular nanocomposites in approximately one minute. Moreover, the strong wavelength dependent optical anisotropy in the nanocomposite highlights their potential applications for light manipulation and information transmission. The present invention opens a new avenue in designing manufacture-friendly continuous processing for the fabrication of functional nanocomposite thin films.

  7. Characterizations of photoconductivity of graphene oxide thin films

    Directory of Open Access Journals (Sweden)

    Shiang-Kuo Chang-Jian

    2012-06-01

    Full Text Available Characterizations of photoresponse of a graphene oxide (GO thin film to a near infrared laser light were studied. Results showed the photocurrent in the GO thin film was cathodic, always flowing in an opposite direction to the initial current generated by the preset bias voltage that shows a fundamental discrepancy from the photocurrent in the reduced graphene oxide thin film. Light illumination on the GO thin film thus results in more free electrons that offset the initial current. By examining GO thin films reduced at different temperatures, the critical temperature for reversing the photocurrent from cathodic to anodic was found around 187°C. The dynamic photoresponse for the GO thin film was further characterized through the response time constants within the laser on and off durations, denoted as τon and τoff, respectively. τon for the GO thin film was comparable to the other carbon-based thin films such as carbon nanotubes and graphenes. τoff was, however, much larger than that of the other's. This discrepancy was attributable to the retardation of exciton recombination rate thanks to the existing oxygen functional groups and defects in the GO thin films.

  8. Silicon oxide nanoimprint stamp fabrication by edge lithography reinforced with silicon nitride

    NARCIS (Netherlands)

    Zhao, Yiping; Berenschot, Johan W.; de Boer, Meint J.; Jansen, Henricus V.; Tas, Niels Roelof; Huskens, Jurriaan; Elwenspoek, Michael Curt

    2007-01-01

    The fabrication of silicon oxide nanoimprint stamp employing edge lithography in combination with silicon nitride deposition is presented. The fabrication process is based on conventional photolithography an weg etching methods. Nanoridges with width dimension of sub-20 nm were fabricated by edge

  9. New fabrication of high-frequency (100-MHz) ultrasound PZT film kerfless linear array.

    Science.gov (United States)

    Zhu, Benpeng; Chan, Ngai Yui; Dai, Jiyan; Shung, K Kirk; Takeuchi, Shinichi; Zhou, Qifa

    2013-04-01

    The paper describes the design, fabrication, and measurements of a high-frequency ultrasound kerfless linear array prepared from hydrothermal lead zirconate titanate (PZT) thick film. The 15-μm hydrothermal PZT thick film with an area of 1 × 1 cm, obtained through a self-separation process from Ti substrate, was used to fabricate a 32-element 100-MHz kerfless linear array with photolithography. The bandwidth at -6 dB without matching layer, insertion loss around center frequency, and crosstalk between adjacent elements were measured to be 39%, -30 dB, and -15 dB, respectively.

  10. Fabricate heterojunction diode by using the modified spray pyrolysis method to deposit nickel-lithium oxide on indium tin oxide substrate.

    Science.gov (United States)

    Wu, Chia-Ching; Yang, Cheng-Fu

    2013-06-12

    P-type lithium-doped nickel oxide (p-LNiO) thin films were deposited on an n-type indium tin oxide (ITO) glass substrate using the modified spray pyrolysis method (SPM), to fabricate a transparent p-n heterojunction diode. The structural, optical, and electrical properties of the p-LNiO and ITO thin films and the p-LNiO/n-ITO heterojunction diode were characterized by field emission scanning electron microscopy (FE-SEM), X-ray diffraction (XRD), UV-visible spectroscopy, Hall effect measurement, and current-voltage (I-V) measurements. The nonlinear and rectifying I-V properties confirmed that a heterojunction diode characteristic was successfully formed in the p-LNiO/n-ITO (p-n) structure. The I-V characteristic was dominated by space-charge-limited current (SCLC), and the Anderson model demonstrated that band alignment existed in the p-LNiO/n-ITO heterojunction diode.

  11. Frequency characteristics of the MIM thick film capacitors fabricated by laser micro-cladding electronic pastes

    International Nuclear Information System (INIS)

    Cao Yu; Li Xiangyou; Zeng Xiaoyan

    2008-01-01

    With rapid development of the electronic industry, how to respond the market requests quickly, shorten R and D prototyping fabrication period, and reduce the cost of the electronic devices have become a challenge work, which need flexible manufacturing methods. In this work, two direct write processing methods, direct material deposition by microPen and Nd:YAG laser micro-cladding, are integrated with CAD/CAM technology for the hybrid fabrication of passive electronic components. Especially, the metal-insulator-metal (MIM) type thick film capacitors are fabricated on ceramic substrates by this method. A basic two-step procedure of laser micro-cladding electronic pastes (LMCEPs) process for the thick film pattern preparation is presented. For a better understanding of the MIM thick film capacitor characterization, equivalent circuit models at low-frequency and high-frequency domains are introduced, respectively. The frequency characteristics tests up to 1.8 GHz of capacitance stability, equivalent series resistance (ESR), equivalent series inductance (ESL) and impendence are performed, and the results show good DC voltage stability (<2.48%), good frequency stability (<2.6%) and low dissipation factor (<0.6%) of the MIM thick film capacitors, which may get application to megahertz regions. The further developments of the LMCEP process for fabricating MIM thick film capacitors are also investigated

  12. Frequency characteristics of the MIM thick film capacitors fabricated by laser micro-cladding electronic pastes

    Energy Technology Data Exchange (ETDEWEB)

    Cao Yu; Li Xiangyou [Wuhan National Laboratory for Optoelectronics, Huazhong University of Sci and Tech, 430074 Wuhan, Hubei (China); Zeng Xiaoyan [Wuhan National Laboratory for Optoelectronics, Huazhong University of Sci and Tech, 430074 Wuhan, Hubei (China)], E-mail: xyzeng@mail.hust.edu.cn

    2008-05-25

    With rapid development of the electronic industry, how to respond the market requests quickly, shorten R and D prototyping fabrication period, and reduce the cost of the electronic devices have become a challenge work, which need flexible manufacturing methods. In this work, two direct write processing methods, direct material deposition by microPen and Nd:YAG laser micro-cladding, are integrated with CAD/CAM technology for the hybrid fabrication of passive electronic components. Especially, the metal-insulator-metal (MIM) type thick film capacitors are fabricated on ceramic substrates by this method. A basic two-step procedure of laser micro-cladding electronic pastes (LMCEPs) process for the thick film pattern preparation is presented. For a better understanding of the MIM thick film capacitor characterization, equivalent circuit models at low-frequency and high-frequency domains are introduced, respectively. The frequency characteristics tests up to 1.8 GHz of capacitance stability, equivalent series resistance (ESR), equivalent series inductance (ESL) and impendence are performed, and the results show good DC voltage stability (<2.48%), good frequency stability (<2.6%) and low dissipation factor (<0.6%) of the MIM thick film capacitors, which may get application to megahertz regions. The further developments of the LMCEP process for fabricating MIM thick film capacitors are also investigated.

  13. Nanopore fabricated in pyramidal HfO2 film by dielectric breakdown method

    Science.gov (United States)

    Wang, Yifan; Chen, Qi; Deng, Tao; Liu, Zewen

    2017-10-01

    The dielectric breakdown method provides an innovative solution to fabricate solid-state nanopores on insulating films. A nanopore generation event via this method is considered to be caused by random charged traps (i.e., structural defects) and high electric fields in the membrane. Thus, the position and number of nanopores on planar films prepared by the dielectric breakdown method is hard to control. In this paper, we propose to fabricate nanopores on pyramidal HfO2 films (10-nm and 15-nm-thick) to improve the ability to control the location and number during the fabrication process. Since the electric field intensity gets enhanced at the corners of the pyramid-shaped film, the probability of nanopore occurrence at vertex and edge areas increases. This priority of appearance provides us chance to control the location and number of nanopores by monitoring a sudden irreversible discrete increase in current. The experimental results showed that the probability of nanopore occurrence decreases in an order from the vertex area, the edge area to the side face area. The sizes of nanopores ranging from 30 nm to 10 nm were obtained. Nanopores fabricated on the pyramid-shaped HfO2 film also showed an obvious ion current rectification characteristic, which might improve the nanopore performance as a biomolecule sequencing platform.

  14. Indium Sulfide and Indium Oxide Thin Films Spin-Coated from Triethylammonium Indium Thioacetate Precursor for n-Channel Thin Film Transistor

    Energy Technology Data Exchange (ETDEWEB)

    Tung, Duy Dao; Jeong, Hyun Dam [Chonnam Natioal University, Gwangju (Korea, Republic of)

    2014-09-15

    The In{sub 2}S{sub 3} thin films of tetragonal structure and In{sub 2}O{sub 3} films of cubic structure were synthesized by a spin coating method from the organometallic compound precursor triethylammonium indium thioacetate ([(Et){sub 3}NH]+ [In(SCOCH{sub 3}){sub 4}]''-; TEA-InTAA). In order to determine the electron mobility of the spin-coated TEA-InTAA films, thin film transistors (TFTs) with an inverted structure using a gate dielectric of thermal oxide (SiO{sub 2}) was fabricated. These devices exhibited n-channel TFT characteristics with a field-effect electron mobility of 10.1 cm''2 V''-1s''-1 at a curing temperature of 500 o C, indicating that the semiconducting thin film material is applicable for use in low-cost, solution-processed printable electronics.

  15. Surface characteristics of coated polyester fabric with reduced graphene oxide and polypyrrole

    Energy Technology Data Exchange (ETDEWEB)

    Berendjchi, Amirhosein [Department of Textile Engineering, Science and Research Branch, Islamic Azad University, Tehran (Iran, Islamic Republic of); Khajavi, Ramin, E-mail: khajavi@azad.ac.ir [Nano Technology Research Center, South Tehran Branch, Islamic Azad University, Tehran (Iran, Islamic Republic of); Yousefi, Ali Akbar [Faculty of Polymer Processing, Iran Polymer and Petrochemical Institute, Tehran (Iran, Islamic Republic of); Yazdanshenas, Mohammad Esmail [Department of Textile Engineering, Yazd Branch, Islamic Azad University, Yazd (Iran, Islamic Republic of)

    2016-03-30

    Graphical abstract: - Highlights: • PET in form of film or membrane is hydrophobic and its wetting behavior follows the Wenzel wetting theory. In the form of textile materials it shows hydrophilicity. • rGO coated PET fabric shows hydrophobicity and its wetting behavior places between Wenzel and Cassie–Baxter models. • PET coated fabric by PPy shows superhydrophobicity and its wetting behavior is consistence with Cassie–Baxter model. • Due to oxidation of the rGO during in situ synthesis of PPy the rGO–PPy coated PET shows hydrophilicity. - Abstract: In this study, the influence of coating polyethylene terephthalate (PET) fabric with reduced graphene oxide (rGO) and polypyrrole (PPy), individually or in combination (rGO–PPy), on surface chemistry and roughness (focusing on wetting behavior), were analyzed systematically. Characterization was carried out by observing the topography (atomic force microscopy – AFM) and stating surface analysis (X-ray photoelectron spectroscopy – XPS), contact angles (goniometry), water shedding angles, and surface energy values of the samples. The results showed that the contact angles of pristine (uncoated), GO and rGO–PPy coated samples were 0°, while it was 92°, 123° and 151° for hot pressed (2nd pristine sample), rGO and PPy samples, respectively. A zero contact angle for PET sample was due to its wicking ability. Results were interpreted with Young, Wenzel and Cassie Baxter equations. It was found that PPy coated samples were consistent with Cassie–Baxter equation, while rGO placed between Wenzel and Cassie–Baxter wetting models.

  16. Flame retardancy and ultraviolet resistance of silk fabric coated by graphene oxide

    Directory of Open Access Journals (Sweden)

    Ji Yi-Min

    2017-01-01

    Full Text Available Silk fabrics were coated by graphene oxide hydrosol in order to improve its flame retardancy and ultraviolet resistance. In addition, montmorillonoid was doped into the graphene oxide hydrosol to further improve the flame retardancy of silk fabrics. The flame retardancy and ultraviolet resistance were mainly characterized by limiting oxygen index, vertical flame test, smoke density test, and ultraviolet protection factor. The synergistic effect of graphene oxide and montmorillonoid on the thermal stabilization property of the treated silk fabrics was also investigated. The results show that the treated silk fabrics have excellent flame retardancy, thermal stability, smoke suppression, and ultraviolet resistance simultaneously.

  17. Modern methods of material accounting for mixed oxide fuel fabrication facility

    International Nuclear Information System (INIS)

    Eggers, R.F.; Pindak, J.L.; Brouns, R.J.; Williams, R.C.; Brite, D.W.; Kinnison, R.R.; Fager, J.E.

    1981-01-01

    The generic requirements loss detection, and response to alarms of a contemporary material control and accounting (MCandA) philosophy have been applied to a mixed oxide fuel fabrication plant to produce a detailed preliminary MCandA system design that is generally applicable to facilities of this type. This paper summarizes and discusses detailed results of the mixed oxide fuel fabrication plant study

  18. Fabrication and nano-imprintabilities of Zr-, Pd- and Cu-based glassy alloy thin films

    International Nuclear Information System (INIS)

    Takenaka, Kana; Saidoh, Noriko; Nishiyama, Nobuyuki; Inoue, Akihisa

    2011-01-01

    With the aim of investigating nano-imprintability of glassy alloys in a film form, Zr 49 Al 11 Ni 8 Cu 32 , Pd 39 Cu 29 Ni 13 P 19 and Cu 38 Zr 47 Al 9 Ag 6 glassy alloy thin films were fabricated on Si substrate by a magnetron sputtering method. These films exhibit a very smooth surface, a distinct glass transition phenomenon and a large supercooled liquid region of about 80 K, which are suitable for imprinting materials. Moreover, thermal nano-imprintability of these obtained films is demonstrated by using a dot array mold with a dot diameter of 90 nm. Surface observations revealed that periodic nano-hole arrays with a hole diameter of 90 nm were successfully imprinted on the surface of these films. Among them, Pd-based glassy alloy thin film indicated more precise pattern imprintability, namely, flatter residual surface plane and sharper hole edge. It is said that these glassy alloy thin films, especially Pd-based glassy alloy thin film, are one of the promising materials for fabricating micro-machines and nano-devices by thermal imprinting.

  19. Ga–Ge–Te amorphous thin films fabricated by pulsed laser deposition

    International Nuclear Information System (INIS)

    Němec, P.; Nazabal, V.; Dussauze, M.; Ma, H.-L.; Bouyrie, Y.; Zhang, X.-H.

    2013-01-01

    UV pulsed laser deposition was employed for the fabrication of amorphous Ga–Ge–Te thin films. The local structure of the bulk glasses as well as corresponding thin films was studied using Raman scattering spectroscopy; the main structural motifs were found to be [GeTe 4 ], eventually [GaTe 4 ] corner-sharing tetrahedra and disordered Te chains. Optical functions of the films (refractive index, extinction coefficient) were characterized by variable angle spectroscopic ellipsometry. Photostability experiments showed all Ga–Ge–Te laser deposited films to be stable against 1550 nm laser irradiation in an as-deposited state. In an annealed state, the most photostable composition seems to be Ga 10 Ge 15 Te 75 . This particular composition was further studied from the point of view of thermal stability and stability against ageing in as-deposited state. - Highlights: ► Pulsed laser deposition was used for fabrication of amorphous Ga–Ge–Te thin films. ► GeTe 4 , eventually GaTe 4 tetrahedra and disordered Te chains form the film structure. ► Optical functions of Ge–Ga–Te films were characterized by spectroscopic ellipsometry. ► All as-deposited Ga–Ge–Te thin films are stable against 1550 nm irradiation. ► In annealed state, the most photostable composition seems to be Ga 10 Ge 15 Te 75

  20. Fabrication and properties of yttrium doped barium titanate film by RF sputtering

    International Nuclear Information System (INIS)

    Igarashi, H.; Yuasa, M.; Okazaki, K.

    1985-01-01

    Semiconductive barium titanate films were fabricated by RF sputtering on fused quartz, alumina and barium titanate ceramic substrates using barium titanate ceramic with a small amount of yttria as a target. The films on the barium titanate substrates turned blue color and showed a small PTC effect by heat-treating at 1000 0 C in the air after deposition at the substrate temperature of 600 0 C

  1. Ovine tendon collagen: Extraction, characterisation and fabrication of thin films for tissue engineering applications

    Energy Technology Data Exchange (ETDEWEB)

    Fauzi, M.B.; Lokanathan, Y. [Tissue Engineering Centre, UKM Medical Centre, Jalan Yaacob Latiff, Bandar Tun Razak, 56000 Cheras, Kuala Lumpur (Malaysia); Aminuddin, B.S. [Tissue Engineering Centre, UKM Medical Centre, Jalan Yaacob Latiff, Bandar Tun Razak, 56000 Cheras, Kuala Lumpur (Malaysia); Ear, Nose & Throat Consultant Clinic, Ampang Puteri Specialist Hospital, Taman Dato Ahmad Razali, 68000 Ampang, Selangor (Malaysia); Ruszymah, B.H.I. [Tissue Engineering Centre, UKM Medical Centre, Jalan Yaacob Latiff, Bandar Tun Razak, 56000 Cheras, Kuala Lumpur (Malaysia); Department of Physiology, UKM Medical Centre, Jalan Yaacob Latiff, Bandar Tun Razak, 56000 Cheras, Kuala Lumpur (Malaysia); Chowdhury, S.R., E-mail: shiplu@ppukm.ukm.edu.my [Tissue Engineering Centre, UKM Medical Centre, Jalan Yaacob Latiff, Bandar Tun Razak, 56000 Cheras, Kuala Lumpur (Malaysia)

    2016-11-01

    Collagen is the most abundant extracellular matrix (ECM) protein in the human body, thus widely used in tissue engineering and subsequent clinical applications. This study aimed to extract collagen from ovine (Ovis aries) Achilles tendon (OTC), and to evaluate its physicochemical properties and its potential to fabricate thin film with collagen fibrils in a random or aligned orientation. Acid-solubilized protein was extracted from ovine Achilles tendon using 0.35 M acetic acid, and 80% of extracted protein was measured as collagen. SDS-PAGE and mass spectrometry analysis revealed the presence of alpha 1 and alpha 2 chain of collagen type I (col I). Further analysis with Fourier transform infrared spectrometry (FTIR), X-ray diffraction (XRD) and energy dispersive X-ray spectroscopy (EDS) confirms the presence of triple helix structure of col I, similar to commercially available rat tail col I. Drying the OTC solution at 37°C resulted in formation of a thin film with randomly orientated collagen fibrils (random collagen film; RCF). Introduction of unidirectional mechanical intervention using a platform rocker prior to drying facilitated the fabrication of a film with aligned orientation of collagen fibril (aligned collagen film; ACF). It was shown that both RCF and ACF significantly enhanced human dermal fibroblast (HDF) attachment and proliferation than that on plastic surface. Moreover, cells were distributed randomly on RCF, but aligned with the direction of mechanical intervention on ACF. In conclusion, ovine tendon could be an alternative source of col I to fabricate scaffold for tissue engineering applications. - Highlights: • Isolated collagen from ovine tendon was characterized as collagen type I. • Collagen film was fabricated via air drying of ovine tendon collagen. • Collagen fibril alignment was realized via unidirectional platform rocker. • Orientation of cells was attained depending on collagen fibril direction in the film. • Collagen films

  2. Thin-film transistors with a channel composed of semiconducting metal oxide nanoparticles deposited from the gas phase

    International Nuclear Information System (INIS)

    Busch, C.; Schierning, G.; Theissmann, R.; Nedic, A.; Kruis, F. E.; Schmechel, R.

    2012-01-01

    The fabrication of semiconducting functional layers using low-temperature processes is of high interest for flexible printable electronics applications. Here, the one-step deposition of semiconducting nanoparticles from the gas phase for an active layer within a thin-film transistor is described. Layers of semiconducting nanoparticles with a particle size between 10 and 25 nm were prepared by the use of a simple aerosol deposition system, excluding potentially unwanted technological procedures like substrate heating or the use of solvents. The nanoparticles were deposited directly onto standard thin-film transistor test devices, using thermally grown silicon oxide as gate dielectric. Proof-of-principle experiments were done deploying two different wide-band gap semiconducting oxides, tin oxide, SnO x , and indium oxide, In 2 O 3 . The tin oxide spots prepared from the gas phase were too conducting to be used as channel material in thin-film transistors, most probably due to a high concentration of oxygen defects. Using indium oxide nanoparticles, thin-film transistor devices with significant field effect were obtained. Even though the electron mobility of the investigated devices was only in the range of 10 −6 cm 2V−1s−1 , the operability of this method for the fabrication of transistors was demonstrated. With respect to the possibilities to control the particle size and layer morphology in situ during deposition, improvements are expected.

  3. High stability mechanisms of quinary indium gallium zinc aluminum oxide multicomponent oxide films and thin film transistors

    International Nuclear Information System (INIS)

    Lee, Ching-Ting; Lin, Yung-Hao; Lin, Jhong-Ham

    2015-01-01

    Quinary indium gallium zinc aluminum oxide (IGZAO) multicomponent oxide films were deposited using indium gallium zinc oxide (IGZO) target and Al target by radio frequency magnetron cosputtering system. An extra carrier transport pathway could be provided by the 3 s orbitals of Al cations to improve the electrical properties of the IGZO films, and the oxygen instability could be stabilized by the strong Al-O bonds in the IGZAO films. The electron concentration change and the electron mobility change of the IGZAO films for aging time of 10 days under an air environment at 40 °C and 75% humidity were 20.1% and 2.4%, respectively. The experimental results verified the performance stability of the IGZAO films. Compared with the thin film transistors (TFTs) using conventional IGZO channel layer, in conducting the stability of TFTs with IGZAO channel layer, the transconductance g m change, threshold voltage V T change, and the subthreshold swing S value change under the same aging condition were improved to 7.9%, 10.5%, and 14.8%, respectively. Furthermore, the stable performances of the IGZAO TFTs were also verified by the positive gate bias stress. In this research, the quinary IGZAO multicomponent oxide films and that applied in TFTs were the first studied in the literature

  4. High stability mechanisms of quinary indium gallium zinc aluminum oxide multicomponent oxide films and thin film transistors

    Energy Technology Data Exchange (ETDEWEB)

    Lee, Ching-Ting, E-mail: ctlee@ee.ncku.edu.tw; Lin, Yung-Hao; Lin, Jhong-Ham [Institute of Microelectronics, Department of Electrical Engineering, Research Center for Energy Technology and Strategy (RCETS), National Cheng Kung University, Tainan, Taiwan (China)

    2015-01-28

    Quinary indium gallium zinc aluminum oxide (IGZAO) multicomponent oxide films were deposited using indium gallium zinc oxide (IGZO) target and Al target by radio frequency magnetron cosputtering system. An extra carrier transport pathway could be provided by the 3 s orbitals of Al cations to improve the electrical properties of the IGZO films, and the oxygen instability could be stabilized by the strong Al-O bonds in the IGZAO films. The electron concentration change and the electron mobility change of the IGZAO films for aging time of 10 days under an air environment at 40 °C and 75% humidity were 20.1% and 2.4%, respectively. The experimental results verified the performance stability of the IGZAO films. Compared with the thin film transistors (TFTs) using conventional IGZO channel layer, in conducting the stability of TFTs with IGZAO channel layer, the transconductance g{sub m} change, threshold voltage V{sub T} change, and the subthreshold swing S value change under the same aging condition were improved to 7.9%, 10.5%, and 14.8%, respectively. Furthermore, the stable performances of the IGZAO TFTs were also verified by the positive gate bias stress. In this research, the quinary IGZAO multicomponent oxide films and that applied in TFTs were the first studied in the literature.

  5. Enhanced mechanical properties of hydrothermal carbamated cellulose nanocomposite film reinforced with graphene oxide.

    Science.gov (United States)

    Gan, Sinyee; Zakaria, Sarani; Syed Jaafar, Sharifah Nabihah

    2017-09-15

    Cellulose carbamate (CC) was synthesized via hydrothermal process and mixed with graphene oxide (GO) to form a homogeneous cellulose matrix nanocomposite films. The properties of CC/GO nanocomposite films fabricated using simple solution-mixing method with different GO loadings were studied. Transmission electron microscope analysis showed the exfoliation of self-synthesized GO nanosheets within the CC matrix. X-ray diffraction results confirmed the crystalline structure of CC/GO films as the CC/GO mass ratio increased from 100/0 to 100/4. The mechanical properties of CC/GO film were significantly improved as compared to neat CC film. From thermogravimetric analysis result, the introduction of GO enhanced the thermal stability and carbon yields. The 3D homogeneous porous structures of the CC/GO films were observed under Field emission scanning electron microscope. These improvements in nanocomposite film properties could be confirmed by Fourier transform infrared spectroscopy due to the strong and good interactions between CC and GO. Copyright © 2017 Elsevier Ltd. All rights reserved.

  6. Intrinsic ZnO films fabricated by DC sputtering from oxygen-deficient targets for Cu(In,Ga)Se2 solar cell application

    Institute of Scientific and Technical Information of China (English)

    Chongyin Yang; DongyunWan; Zhou Wang; Fuqiang Huang

    2011-01-01

    Intrinsic zinc oxide films, normally deposited by radio frequency (RF) sputtering, are fabricated by direct current (DC) sputtering. The oxygen-deficient targets are prepared via a newly developed double crucible method. The 800-nm-thick film obtaines significantly higher carrier mobility compareing with that of the 800-nm-thick ZnO film. This is achieved by the widely used RF sputtering, which favors the prevention of carrier recombination at the interfaces and reduction of the series resistance of solar cells. The optimal ZnO film is used in a Cu (In, Ga) Se2 (CIGS) solar cell with a high efficiency of 11.57%. This letter demonstrates that the insulating ZnO films can be deposited by DC sputtering from oxygen-deficient ZnO targets to lower the cost of thin film solar cells.%Intrinsic zinc oxide films,normally deposited by radio frequency (RF) sputtering,are fabricated by direct current (DC) sputtering.The oxygen-deficient targets are prepared via a newly developed double crucible method.The 800-nm-thick film obtaines significantly higher carrier mobility compareing with that of the 800-nm-thick ZnO film.This is achieved by the widely used RF sputtering,which favors the prevention of carrier recombination at the interfaces and reduction of the series resistance of solar cells.The optimal ZnO film is used in a Cu (In,Ga) Se2 (C1GS) solar cell with a high efficiency of 11.57%.This letter demonstrates that the insulating ZnO films can be deposited by DC sputtering from oxygen-deficient ZnO targets to lower the cost of thin film solar cells.High resistance transparent intrinsic zinc oxide (i-ZnO)thin film has been widely nsed as the front electrode in transparent electronics and photovoltaic devices because of its low cost and nontoxicity.Owing to its unique characteristics of high transparency and adjustable resistivity in a certain range,the use of i-ZnO thin films as diffusion barrier layers of a-Si/μc-Si,CdTe,and CIGS thin-film solar cells has been advantageous

  7. Thin film solar cell configuration and fabrication method

    Science.gov (United States)

    Menezes, Shalini

    2009-07-14

    A new photovoltaic device configuration based on an n-copper indium selenide absorber and a p-type window is disclosed. A fabrication method to produce this device on flexible or rigid substrates is described that reduces the number of cell components, avoids hazardous materials, simplifies the process steps and hence the costs for high volume solar cell manufacturing.

  8. Thin film complementary metal oxide semiconductor (CMOS) device using a single-step deposition of the channel layer

    KAUST Repository

    Nayak, Pradipta K.

    2014-04-14

    We report, for the first time, the use of a single step deposition of semiconductor channel layer to simultaneously achieve both n-and p-type transport in transparent oxide thin film transistors (TFTs). This effect is achieved by controlling the concentration of hydroxyl groups (OH-groups) in the underlying gate dielectrics. The semiconducting tin oxide layer was deposited at room temperature, and the maximum device fabrication temperature was 350C. Both n and p-type TFTs showed fairly comparable performance. A functional CMOS inverter was fabricated using this novel scheme, indicating the potential use of our approach for various practical applications.

  9. Polyurethane-acrylate-based hydrophobic film: Facile fabrication, characterization, and application

    Science.gov (United States)

    Park, Jongsung; Nguyen, Bui Quoc Huy; Kim, Ji-Kwan; Shanmugasundaram, Arunkumar; Lee, Dong-Weon

    2018-06-01

    Polyurethane-acrylate (PUA) is a versatile UV-curable polymer with a short curing time at room temperature, whose surface structure can be flexibly modified by applying various micropatterns. In this paper, we propose a facile and cost-effective fabrication method for the continuous production of an optically transparent PUA-based superhydrophobic thin film. Poly(dimethylsiloxane) (PDMS) was employed as a soft mold for the fabrication of PUA films through the roll-to-roll technique. In addition, nanosilica was spray-coated onto the PUA surface to further improve the hydrophobicity. The fabricated PUA thin film showed the highest static water contact angle (WCA) of ∼140°. The high durability of the PUA film was also demonstrated through mechanical impacting tests. Furthermore, only ∼2% of voltage loss was observed in the solar panel covered with the PUA-based superhydrophobic film. These obtained results indicate the feasibility of applying the film as a protective layer in applications requiring a high transparency and a self-cleaning effect.

  10. Fabrication and high visible-light-driven photocurrent response of g-C{sub 3}N{sub 4} film: The role of thiourea

    Energy Technology Data Exchange (ETDEWEB)

    Ye, Lijuan; Chen, Shijian, E-mail: sjchen@cqu.edu.cn

    2016-12-15

    Highlights: • Thiourea promotes the growth and crystalline of the g-C{sub 3}N{sub 4} films on ITO. • Thiourea introduces S dopants into the g-C{sub 3}N{sub 4} films. • The obtained S-doped g-C{sub 3}N{sub 4} thin films show high VLD photocurrent response. • Three heterojunction structure types based on the g-C{sub 3}N{sub 4} films are proposed. - Abstract: We report on a convenient CVD fabrication of the uniform, compact and reproducible g-C{sub 3}N{sub 4} solid films on indium-tin oxide substrates. It is found that mixing quantitative thiourea into melamine as co-precursor prompts the deposition of greenish-yellow, transparent and smooth g-C{sub 3}N{sub 4} thin films. The thiourea apparently affects the crystalline, the surface morphologies and the energy band structures of g-C{sub 3}N{sub 4} films by modulating the polymerization process of the precursors, and simultaneously introduces S dopants into the g-C{sub 3}N{sub 4} films. Due to these roles of thiourea, the obtained S-doped g-C{sub 3}N{sub 4} films as a photoelectrode show a high and stable visible-light-driven photocurrent response. To further improve the photocurrent, the construction of three heterojunction structure types based on g-C{sub 3}N{sub 4} films is proposed and the corresponding charge transfer mechanisms are well discussed. The successful fabrication of high quality g-C{sub 3}N{sub 4} films in this work provides a footstone to construct the heterojunction film structures based on the carbon nitrides for the photoelectrochemical overall water splitting.

  11. Fabrication and characterization of He-charged ODS-FeCrNi films deposited by a radio-frequency plasma magnetron sputtering technique

    Science.gov (United States)

    Song, Liang; Wang, Xianping; Wang, Le; Zhang, Ying; Liu, Wang; Jiang, Weibing; Zhang, Tao; Fang, Qianfeng; Liu, Changsong

    2017-04-01

    He-charged oxide dispersion strengthened (ODS) FeCrNi films were prepared by a radio-frequency (RF) plasma magnetron sputtering method in a He and Ar mixed atmosphere at 150 °C. As a comparison, He-charged FeCrNi films were also fabricated at the same conditions through direct current (DC) plasma magnetron sputtering. The doping of He atoms and Y2O3 in the FeCrNi films was realized by the high backscattered rate of He ions and Y2O3/FeCrNi composite target sputtering method, respectively. Inductive coupled plasma (ICP) and x-ray photoelectron spectroscopy (XPS) analysis confirmed the existence of Y2O3 in FeCrNi films, and Y2O3 content hardly changed with sputtering He/Ar ratio. Cross-sectional scanning electron microscopy (SEM) shows that the FeCrNi films were composed of dense columnar nanocrystallines and the thickness of the films was obviously dependent on He/Ar ratio. Nanoindentation measurements revealed that the FeCrNi films fabricated through DC/RF plasma magnetron sputtering methods exhibited similar hardness values at each He/Ar ratio, while the dispersion of Y2O3 apparently increased the hardness of the films. Elastic recoil detection (ERD) showed that DC/RF magnetron sputtered FeCrNi films contained similar He amounts (˜17 at.%). Compared with the minimal change of He level with depth in DC-sputtered films, the He amount decreases gradually in depth in the RF-sputtered films. The Y2O3-doped FeCrNi films were shown to exhibit much smaller amounts of He owing to the lower backscattering possibility of Y2O3 and the inhibition effect of nano-sized Y2O3 particles on the He element.

  12. Cholesterol biosensor based on rf sputtered zinc oxide nanoporous thin film

    International Nuclear Information System (INIS)

    Singh, S. P.; Arya, Sunil K.; Pandey, Pratibha; Malhotra, B. D.; Saha, Shibu; Sreenivas, K.; Gupta, Vinay

    2007-01-01

    Cholesterol oxidase (ChOx) has been immobilized onto zinc oxide (ZnO) nanoporous thin films grown on gold surface. A preferred c-axis oriented ZnO thin film with porous surface morphology has been fabricated by rf sputtering under high pressure. Optical studies and cyclic voltammetric measurements show that the ChOx/ZnO/Au bioelectrode is sensitive to the detection of cholesterol in 25-400 mg/dl range. A relatively low value of enzyme's kinetic parameter (Michaelis-Menten constant) ∼2.1 mM indicates enhanced enzyme affinity of ChOx to cholesterol. The observed results show promising application of nanoporous ZnO thin film for biosensing application without any functionalization

  13. Hybrid composite thin films composed of tin oxide nanoparticles and cellulose

    International Nuclear Information System (INIS)

    Mahadeva, Suresha K; Nayak, Jyoti; Kim, Jaehwan

    2013-01-01

    This paper reports the preparation and characterization of hybrid thin films consisting of tin oxide (SnO 2 ) nanoparticles and cellulose. SnO 2 nanoparticle loaded cellulose hybrid thin films were fabricated by a solution blending technique, using sodium dodecyl sulfate as a dispersion agent. Scanning and transmission electron microscopy studies revealed uniform dispersion of the SnO 2 nanoparticles in the cellulose matrix. Reduction in the crystalline melting transition temperature and tensile properties of cellulose was observed due to the SnO 2 nanoparticle loading. Potential application of these hybrid thin films as low cost, flexible and biodegradable humidity sensors is examined in terms of the change in electrical resistivity of the material exposed to a wide range of humidity as well as its response–recovery behavior. (paper)

  14. A novel electrode surface fabricated by directly attaching gold nanoparticles onto NH{sub 2}{sup +} ions implanted-indium tin oxide substrate

    Energy Technology Data Exchange (ETDEWEB)

    Liu Chenyao; Jiao Jiao; Chen Qunxia [College of Chemistry, Beijing Normal University, Beijing 100875 (China); Xia Ji [Key Laboratory of Beam Technology and Material Modification of Ministry of Education, Beijing Normal University, Beijing 100875 (China); Li Shuoqi [College of Chemistry, Beijing Normal University, Beijing 100875 (China); Hu Jingbo, E-mail: hujingbo@bnu.edu.c [College of Chemistry, Beijing Normal University, Beijing 100875 (China); Li Qilong [College of Chemistry, Beijing Normal University, Beijing 100875 (China)

    2010-12-01

    A new type of gold nanoparticle attached to a NH{sub 2}{sup +} ion implanted-indium tin oxide surface was fabricated without using peculiar binder molecules, such as 3-(aminopropyl)-trimethoxysilane. A NH{sub 2}/indium tin oxide film was obtained by implantation at an energy of 80 keV with a fluence of 5 x 10{sup 15} ions/cm{sup 2}. The gold nanoparticle-modified film was characterized by X-ray photoelectron spectroscopy, scanning electron microscopy and electrochemical techniques and compared with a modified bare indium tin oxide surface and 3-(aminopropyl)-trimethoxysilane linked surface, which exhibited a relatively low electron transfer resistance and high electrocatalytic activity. The results demonstrate that NH{sub 2}{sup +} ion implanted-indium tin oxide films can provide an important route to immobilize nanoparticles, which is attractive in developing new biomaterials.

  15. Chemical Vapor Identification by Plasma Treated Thick Film Tin Oxide Gas Sensor Array and Pattern Recognition

    Directory of Open Access Journals (Sweden)

    J. K. Srivastava

    2011-02-01

    Full Text Available Present study deals the class recognition potential of a four element plasma treated thick film tin oxide gas sensor array exposed with volatile organic compounds (VOCs. Methanol, Ethanol and Acetone are selected as target VOCs and exposed on sensor array at different concentration in range from 100-1000 ppm. Sensor array consist of four tin oxide sensors doped with 1-4 % PbO concentrations were fabricated by thick film technology and then treated with oxygen plasma for 5-10 minute durations. Sensor signal is analyzed by principal component analysis (PCA for visual classification of VOCs. Further output of PCA is used as input for classification of VOCs by four pattern classification techniques as: linear discriminant analysis (LDA, k-nearest neighbor (KNN, back propagation neural network (BPNN and support vector machine (SVM. All the four classifier results 100 % correct classification rate of VOCs by response analysis of sensor array treated with plasma for 5 minute.

  16. Inkjet-Printed In-Ga-Zn Oxide Thin-Film Transistors with Laser Spike Annealing

    Science.gov (United States)

    Huang, Hang; Hu, Hailong; Zhu, Jingguang; Guo, Tailiang

    2017-07-01

    Inkjet-printed In-Ga-Zn oxide (IGZO) thin-film transistors (TFTs) have been fabricated at low temperature using laser spike annealing (LSA) treatment. Coffee-ring effects during the printing process were eliminated to form uniform IGZO films by simply increasing the concentration of solute in the ink. The impact of LSA on the TFT performance was studied. The field-effect mobility, threshold voltage, and on/off current ratio were greatly influenced by the LSA treatment. With laser scanning at 1 mm/s for 40 times, the 30-nm-thick IGZO TFT baked at 200°C showed mobility of 1.5 cm2/V s, threshold voltage of -8.5 V, and on/off current ratio >106. Our findings demonstrate the feasibility of rapid LSA treatment of low-temperature inkjet-printed oxide semiconductor transistors, being comparable to those obtained by conventional high-temperature annealing.

  17. Nuclear microanalysis of oxide films on structural steel

    International Nuclear Information System (INIS)

    Istomin, I.V.; Karabash, V.A.; Maisyukov, V.D.; Sosnin, A.N.; Shorin, V.S.

    1989-01-01

    Studies of the behavior of structural materials in nuclear power plants have indicated the important role of oxide films on metals, especially metals of the iron group. The films may be formed as a result of the corrosion of the metal in an aggressive coolant. At the same time, some oxide films have anticorrosive properties and can be produced specially by the introduction of inhibitor-passivators, e.g., molecular oxygen, into the aggressive medium. Experimental data on the film growth rate make it possible to determine the kinetics of the oxidation process, the nature of the diffusion of the main components through the film, and the role of the phase transitions (crystal-chemical transformations) and point defects during the migration of oxygen and metal ions through the oxide. In this study nuclear microanalysis is used to measure the parameters of oxide films formed on 10Cr2Mo and 1Cr18Ni10Ti steels in steam in the temperature range 320-620C. In this method the film parameters in the general analysis of the energy spectra of deuterons back-scattered from iron nuclei and protons in the case of the 16 O(d,p 1 ) 17 O nuclear reaction. With this approach and an initial deuteron energy E o = 0.9 MeV the range of the measurable thickness t of the films is 0.001-1.5 mg/cm 2 . The data obtained not only confirm the high sensitivity of the nuclear microanalysis method but also demonstrate that it can be used for nondestructive quality control of the surface

  18. The Importance of Moisture in Hybrid Lead Halide Perovskite Thin Film Fabrication.

    Science.gov (United States)

    Eperon, Giles E; Habisreutinger, Severin N; Leijtens, Tomas; Bruijnaers, Bardo J; van Franeker, Jacobus J; deQuilettes, Dane W; Pathak, Sandeep; Sutton, Rebecca J; Grancini, Giulia; Ginger, David S; Janssen, Rene A J; Petrozza, Annamaria; Snaith, Henry J

    2015-09-22

    Moisture, in the form of ambient humidity, has a significant impact on methylammonium lead halide perovskite films. In particular, due to the hygroscopic nature of the methylammonium component, moisture plays a significant role during film formation. This issue has so far not been well understood and neither has the impact of moisture on the physical properties of resultant films. Herein, we carry out a comprehensive and well-controlled study of the effect of moisture exposure on methylammonium lead halide perovskite film formation and properties. We find that films formed in higher humidity atmospheres have a less continuous morphology but significantly improved photoluminescence, and that film formation is faster. In photovoltaic devices, we find that exposure to moisture, either in the precursor solution or in the atmosphere during formation, results in significantly improved open-circuit voltages and hence overall device performance. We then find that by post-treating dry films with moisture exposure, we can enhance photovoltaic performance and photoluminescence in a similar way. The enhanced photoluminescence and open-circuit voltage imply that the material quality is improved in films that have been exposed to moisture. We determine that this improvement stems from a reduction in trap density in the films, which we postulate to be due to the partial solvation of the methylammonium component and "self-healing" of the perovskite lattice. This work highlights the importance of controlled moisture exposure when fabricating high-performance perovskite devices and provides guidelines for the optimum environment for fabrication. Moreover, we note that often an unintentional water exposure is likely responsible for the high performance of solar cells produced in some laboratories, whereas careful synthesis and fabrication in a dry environment will lead to lower-performing devices.

  19. L1{sub 0}-FePt films fabricated by wet-chemical route

    Energy Technology Data Exchange (ETDEWEB)

    Hong, Xiaoliang; Xiao, Wen; Bao, Nina; Li, Weimin; Chichvarina, Olga, E-mail: A0077107@nus.edu.sg; Ding, Jun, E-mail: msedingj@nus.edu.sg

    2015-08-31

    In this work, we have developed a method to fabricate FePt films by a combination of chemical deposition and post-annealing. Pt-doped Fe films were deposited on Pt(100 nm)/Ti(50 nm)/SiO{sub 2}/Si substrate using thermal deposition and the as-deposited films were subsequently annealed from 300 °C to 800 °C under 5% H{sub 2}/95% N{sub 2}. FePt films were achieved through diffusion and rearrangement of Fe and Pt atoms in post-annealing process. From X-ray diffraction results, the face-centered cubic (fcc) FePt phase appeared at 300 °C and the transformation from fcc to L1{sub 0} phase started at 400 °C. The L1{sub 0}-FePt film possessed an out-of-plane anisotropy and a coercivity of 729 kA/m after annealing at 600 °C. A further increase in annealing temperature led to lower value of coercivity, probably because of grain growth. In addition, the thickness of Pt-doped Fe films could be controlled from 150 nm to 700 nm by adjusting the amount of surfactant used. Our superconducting quantum interference device analysis showed that Pt dopant could significantly improve the chemical stability of Fe films in air. - Highlights: • We fabricated FePt film by a combination of chemical deposition and post-annealing. • L1{sub 0} FePt film was formed by Fe/Pt diffusion in annealing of Pt-doped Fe film. • L1{sub 0}-phase FePt with high coercivity and small out-of-plane anisotropy • Relatively small amount of Pt dopant can enhance chemical stability greatly. • We studied structure and magnetic property of as-deposited and annealed FePt film.

  20. Indium-Nitrogen Codoped Zinc Oxide Thin Film Deposited by Ultrasonic Spray Pyrolysis on n-(111 Si Substrate: The Effect of Film Thickness

    Directory of Open Access Journals (Sweden)

    Cheng-Chang Yu

    2014-01-01

    Full Text Available Indium-nitrogen codoped zinc oxide (INZO thin films were fabricated by spray pyrolysis deposition technique on n-(111 Si substrate with different film thicknesses at 450°C using a precursor containing zinc acetate, ammonium acetate, and indium nitrate with 1 : 3 : 0.05 at.% concentration. The morphology and structure studies were carried out by scanning electron microscopy (SEM and X-ray diffraction (XRD. The grain size of the films increased when increasing the film thickness. From XRD spectra, polycrystalline ZnO structure can be observed and the preferred orientation behavior varied from (002 to (101 as the film thickness increased. The concentration and mobility were investigated by Hall effect measurement. the p-type films with a hole mobility around 3 cm2V−1s−1 and hole concentration around 3×1019 cm−3 can be achieved with film thickness less than 385 nm. The n-type conduction with concentration 1×1020 cm−3 is observed for film with thickness 1089 nm. The defect states were characterized by photoluminescence. With temperature-dependent conductivity analysis, acceptor state with activation energy 0.139 eV dominate the p type conduction for thin INZO film. And the Zn-related shallow donors with activation energy 0.029 eV dominate the n-type conduction for the thick INZO film.

  1. Study of transport properties of copper/zinc-oxide-nanorods-based Schottky diode fabricated on textile fabric

    International Nuclear Information System (INIS)

    Khan, Azam; Hussain, Mushtaque; Abbasi, Mazhar Ali; Ibupoto, Zafar Hussain; Nur, Omer; Willander, Magnus

    2013-01-01

    In this work, a copper/zinc-oxide (ZnO)-nanorods-based Schottky diode was fabricated on the textile fabric substrate. ZnO nanorods were grown on a silver-coated textile fabric substrate by using the hydrothermal route. Scanning electron microscopy and x-ray diffraction techniques were used for the structural study. The electrical characterization of copper/ZnO-nanorods-based Schottky diodes was investigated by using a semiconductor parameter analyzer and an impedance spectrometer. The current density–voltage (J–V) and capacitance–voltage (C–V) measurements were used to estimate the electrical parameters. The threshold voltage (V th ), ideality factor (η), barrier height (ϕ b ), reverse saturation current density (J s ), carrier concentration (N D ) and built-in potential (V bi ) were determined by using experimental data and (simulated) curve fitting. This study describes the possible fabrication of electronic and optoelectronic devices on textile fabric substrate with an acceptable performance. (paper)

  2. Lipase immobilized on nanostructured cerium oxide thin film coated on transparent conducting oxide electrode for butyrin sensing

    International Nuclear Information System (INIS)

    Panky, Sreedevi; Thandavan, Kavitha; Sivalingam, Durgajanani; Sethuraman, Swaminathan; Krishnan, Uma Maheswari; Jeyaprakash, Beri Gopalakrishnan; Rayappan, John Bosco Balaguru

    2013-01-01

    Nanostructured cerium oxide (CeO 2 ) thin films were deposited on transparent conducting oxide (TCO) substrate using spray pyrolysis technique with cerium nitrate salt, Ce(NO 3 ) 3 ·6H 2 O as precursor. Fluorine doped cadmium oxide (CdO:F) thin film prepared using spray pyrolysis technique acts as the TCO film and hence the bare electrode. The structural, morphological and elemental characterizations of the films were carried out using X-ray diffraction (XRD), field emission scanning electron microscopy (FE-SEM) and energy dispersive X-ray analysis (EDX) respectively. The diffraction peak positions in XRD confirmed the formation of highly crystalline ceria with cubic structure and FE-SEM images showed uniform adherent films with granular morphology. The band gaps of CeO 2 and TCO were found to be 3.2 eV and 2.6 eV respectively. Lipase enzyme was physisorbed on the surface of CeO 2 /TCO film to form the lipase/nano-CeO 2 /TCO bioelectrode. Sensing studies were carried out using cyclic voltammetry and amperometry, with lipase/nano-CeO 2 /TCO as working electrode and tributyrin as substrate. The mediator-free biosensor with nanointerface exhibited excellent linearity (0.33–1.98 mM) with a lowest detection limit of 2 μM with sharp response time of 5 s and a shelf life of about 6 weeks. -- Graphical abstract: Nanostructured cerium oxide thin films were deposited on transparent conducting oxide (TCO) substrate using spray pyrolysis technique. Fluorine doped cadmium oxide (CdO:F) thin film acts as the TCO film and hence the working electrode. Lipase enzyme was physisorbed on the surface of CeO 2 /TCO film and hence the lipase/nano-CeO 2 /TCO bioelectrode has been fabricated. Sensing studies were carried out using cyclic voltammetry and amperometry with tributyrin as substrate. The mediator-free biosensor with nanointerface exhibited excellent linearity (0.33–1.98 mM) with a lowest detection limit of 2 μM with sharp response time of 5 s and a shelf life of about 6

  3. Lipase immobilized on nanostructured cerium oxide thin film coated on transparent conducting oxide electrode for butyrin sensing

    Energy Technology Data Exchange (ETDEWEB)

    Panky, Sreedevi; Thandavan, Kavitha [Centre for Nanotechnology and Advanced Biomaterials (CeNTAB), SASTRA University, Thanjavur 613 401, Tamil Nadu (India); School of Chemical and Biotechnology, SASTRA University, Thanjavur 613 401, Tamil Nadu (India); Sivalingam, Durgajanani [Centre for Nanotechnology and Advanced Biomaterials (CeNTAB), SASTRA University, Thanjavur 613 401, Tamil Nadu (India); School of Electrical and Electronics Engineering, SASTRA University, Thanjavur 613 401, Tamil Nadu (India); Sethuraman, Swaminathan; Krishnan, Uma Maheswari [Centre for Nanotechnology and Advanced Biomaterials (CeNTAB), SASTRA University, Thanjavur 613 401, Tamil Nadu (India); School of Chemical and Biotechnology, SASTRA University, Thanjavur 613 401, Tamil Nadu (India); Jeyaprakash, Beri Gopalakrishnan [Centre for Nanotechnology and Advanced Biomaterials (CeNTAB), SASTRA University, Thanjavur 613 401, Tamil Nadu (India); School of Electrical and Electronics Engineering, SASTRA University, Thanjavur 613 401, Tamil Nadu (India); Rayappan, John Bosco Balaguru, E-mail: rjbosco@ece.sastra.edu [Centre for Nanotechnology and Advanced Biomaterials (CeNTAB), SASTRA University, Thanjavur 613 401, Tamil Nadu (India); School of Electrical and Electronics Engineering, SASTRA University, Thanjavur 613 401, Tamil Nadu (India)

    2013-01-15

    Nanostructured cerium oxide (CeO{sub 2}) thin films were deposited on transparent conducting oxide (TCO) substrate using spray pyrolysis technique with cerium nitrate salt, Ce(NO{sub 3}){sub 3}{center_dot}6H{sub 2}O as precursor. Fluorine doped cadmium oxide (CdO:F) thin film prepared using spray pyrolysis technique acts as the TCO film and hence the bare electrode. The structural, morphological and elemental characterizations of the films were carried out using X-ray diffraction (XRD), field emission scanning electron microscopy (FE-SEM) and energy dispersive X-ray analysis (EDX) respectively. The diffraction peak positions in XRD confirmed the formation of highly crystalline ceria with cubic structure and FE-SEM images showed uniform adherent films with granular morphology. The band gaps of CeO{sub 2} and TCO were found to be 3.2 eV and 2.6 eV respectively. Lipase enzyme was physisorbed on the surface of CeO{sub 2}/TCO film to form the lipase/nano-CeO{sub 2}/TCO bioelectrode. Sensing studies were carried out using cyclic voltammetry and amperometry, with lipase/nano-CeO{sub 2}/TCO as working electrode and tributyrin as substrate. The mediator-free biosensor with nanointerface exhibited excellent linearity (0.33-1.98 mM) with a lowest detection limit of 2 {mu}M with sharp response time of 5 s and a shelf life of about 6 weeks. -- Graphical abstract: Nanostructured cerium oxide thin films were deposited on transparent conducting oxide (TCO) substrate using spray pyrolysis technique. Fluorine doped cadmium oxide (CdO:F) thin film acts as the TCO film and hence the working electrode. Lipase enzyme was physisorbed on the surface of CeO{sub 2}/TCO film and hence the lipase/nano-CeO{sub 2}/TCO bioelectrode has been fabricated. Sensing studies were carried out using cyclic voltammetry and amperometry with tributyrin as substrate. The mediator-free biosensor with nanointerface exhibited excellent linearity (0.33-1.98 mM) with a lowest detection limit of 2 {mu}M with sharp

  4. Influence of oxidation temperature on photoluminescence and electrical properties of amorphous thin film SiC:H:O+Tb

    Energy Technology Data Exchange (ETDEWEB)

    Gordienko, S.O.; Nazarov, A.N.; Rusavsky, A.V.; Vasin, A.V.; Gomeniuk, Yu.V.; Lysenko, V.S.; Strelchuk, V.V.; Nikolaenko, A.S. [Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine, Prospekt Nauki 41, 03028 Kyiv (Ukraine); Ashok, S. [The Pennsylvania State University, Department of Engineering Science, 212 Earth and Engineering Science Bldg., University Park, PA 16802 (United States)

    2011-09-15

    The influence of low-temperature oxidation on chemical composition, luminescent and electrical properties of a-Si{sub 1-x}C{sub x}:H thin films fabricated by reactive RF magnetron sputtering has been studied. A strong dependence on RF sputtering power is seen on the electrical and chemical properties. The a-Si{sub 1-x}C{sub x}:H films fabricated by low RF power levels followed by low-temperature oxidation (at 450 C-500 C) display high intensity of PL, good MOSCV characteristic and low leakage current through the dielectric. Increase of oxidation temperature increases precipitation of carbon nano-inclusions in the materials, that result in reduction of PL intensity and increase of dielectric leakage. (copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  5. Preparation and characterization of graphene-based vanadium oxide composite semiconducting films with horizontally aligned nanowire arrays

    International Nuclear Information System (INIS)

    Jung, Hye-Mi; Um, Sukkee

    2016-01-01

    Highly oriented crystalline hybrid thin films primarily consisting of Magnéli-phase VO 2 and conductive graphene nanoplatelets are fabricated by a sol–gel process via dipping pyrolysis. A combination of chemical, microstructural, and electrical analyses reveals that graphene oxide (GO)-templated vanadium oxide (VO x ) nanocomposite films exhibit a vertically stacked multi-lamellar nanostructure consisting of horizontally aligned vanadium oxide nanowire (VNW) arrays along the (hk0) set of planes on a GO template, with an average crystallite size of 41.4 Å and a crystallographic tensile strain of 0.83%. In addition, GO-derived VO x composite semiconducting films, which have an sp 3 /sp 2 bonding ratio of 0.862, display thermally induced electrical switching properties in the temperature range of − 20 °C to 140 °C, with a transition temperature of approximately 65 °C. We ascribe these results to the use of GO sheets, which serve as a morphological growth template as well as an electrochemically tunable platform for enhancing the charge-carrier mobility. Moreover, the experimental studies demonstrate that graphene-based Magnéli-phase VO x composite semiconducting films can be used in advanced thermo-sensitive smart sensing/switching applications because of their outstanding thermo-electrodynamic properties and high surface charge density induced by the planar-type VNWs. - Highlights: • VO x -graphene oxide composite (G/VO x ) films were fabricated by sol–gel process. • The G/VO x films mainly consisted of Magnéli-phase VO 2 and reduced graphene sheets. • The G/VO x films exhibited multi-lamellar textures with planar VO x nanowire arrays. • The G/VO x films showed the thermo-sensitive electrical switching properties. • Effects of GOs on the electrical characteristics of the G/VO x films were discussed.

  6. Superhydrophobic Thin Films Fabricated by Reactive Layer-by-Layer Assembly of Azlactone-Functionalized Polymers.

    Science.gov (United States)

    Buck, Maren E; Schwartz, Sarina C; Lynn, David M

    2010-09-11

    We report an approach to the fabrication of superhydrophobic thin films that is based on the 'reactive' layer-by-layer assembly of azlactone-containing polymer multilayers. We demonstrate that films fabricated from alternating layers of the azlactone functionalized polymer poly(2-vinyl-4,4-dimethylazlactone) (PVDMA) and poly(ethyleneimine) (PEI) exhibit micro- and nanoscale surface features that result in water contact angles in excess of 150º. Our results reveal that the formation of these surface features is (i) dependent upon film thickness (i.e., the number of layers of PEI and PVDMA deposited) and (ii) that it is influenced strongly by the presence (or absence) of cyclic azlactone-functionalized oligomers that can form upon storage of the 2-vinyl-4,4-dimethylazlactone (VDMA) used to synthesize PVDMA. For example, films fabricated using polymers synthesized in the presence of these oligomers exhibited rough, textured surfaces and superhydrophobic behavior (i.e., advancing contact angles in excess of 150º). In contrast, films fabricated from PVDMA polymerized in the absence of this oligomer (e.g., using freshly distilled monomer) were smooth and only moderately hydrophobic (i.e., advancing contact angles of ~75º). The addition of authentic, independently synthesized oligomer to samples of distilled VDMA at specified and controlled concentrations permitted reproducible fabrication of superhydrophobic thin films on the surfaces of a variety of different substrates. The surfaces of these films were demonstrated to be superhydrophobic immediately after fabrication, but they became hydrophilic after exposure to water for six days. Additional experiments demonstrated that it was possible to stabilize and prolong the superhydrophobic properties of these films (e.g., advancing contact angles in excess of 150° even after complete submersion in water for at least six weeks) by exploiting the reactivity of residual azlactones to functionalize the surfaces of the films

  7. Fabrication of hydrophobic surface of titanium dioxide films by successive ionic layer adsorption and reaction (SILAR) method

    International Nuclear Information System (INIS)

    More, A.M.; Gunjakar, J.L.; Lokhande, C.D.; Joo, Oh Shim

    2009-01-01

    Titanium dioxide (TiO 2 ) films were fabricated on fluorine doped tin oxide (FTO) coated glass substrate using successive ionic layer adsorption and reaction (SILAR) method. The X-ray diffraction, scanning electron microscopy, transmission electron microscopy, optical absorption and contact angle measurement were applied to study the structural, surface morphological, optical and surface wettability properties of the as-deposited and annealed TiO 2 films. The X-ray diffraction studies revealed both as-deposited and annealed TiO 2 films are amorphous. Irregular shaped spherical grains of random size and well covered to the fluorine doped tin oxide coated glass substrates were observed from SEM studies with some cracks after annealing. The optical band gap values of virgin TiO 2, annealed, methyl violet and rose bengal sensitized TiO 2 were found to be 3.6, 3.5, 2.87 and 2.95 eV, respectively. Surface wettability studied in contact with liquid interface, showed hydrophobic nature as water contact angles were greater than 90 deg. The adsorption of dyes, as confirmed by the photographs, is one of the prime requirements for dye sensitized solar cells (DSSC).

  8. Influence of the sputtering system's vacuum level on the properties of indium tin oxide films

    International Nuclear Information System (INIS)

    Zebaze Kana, M.G.; Centurioni, E.; Iencinella, D.; Summonte, C.

    2006-01-01

    The influence of the chamber residual pressure level in the radio frequency magnetron sputtering process on the electrical, optical and structural properties of indium thin oxide (ITO) is investigated. Several ITO films were deposited at various residual pressure levels on Corning glass using In 2 O 3 :SnO 2 target in argon atmosphere and without the addition of oxygen partial pressure. It is found that a very good vacuum is associated to metallic films and results in less transparent ITO films, with some powder formation on the surface. On the contrary highly transparent and conducting films are produced at a higher residual pressure. The best deposition conditions are addressed for ITO films as transparent conducting oxide layers in silicon heterojunction solar cells. Using the optimal vacuum level for ITO fabrication, a maximum short circuit current of 36.6 mA/cm 2 and a fill-factor of 0.78 are obtained for solar cells on textured substrates with a device conversion efficiency of 16.2%

  9. SPH based modelling of oxide and oxide film formation in gravity die castings

    International Nuclear Information System (INIS)

    Ellingsen, K; M'Hamdi, M; Coudert, T

    2015-01-01

    Gravity die casting is an important casting process which has the capability of making complicated, high-integrity components for e.g. the automotive industry. Oxides and oxide films formed during filling affect the cast product quality. The Smoothed particle hydrodynamics (SPH) method is particularly suited to follow complex flows. The SPH method has been used to study filling of a gravity die including the formation and transport of oxides and oxide films for two different filling velocities. A low inlet velocity leads to a higher amount of oxides and oxide films in the casting. The study demonstrates the usefulness of the SPH method for an increased understanding of the effect of different filling procedures on the cast quality. (paper)

  10. Low-Temperature Fabrication of Robust, Transparent, and Flexible Thin-Film Transistors with a Nanolaminated Insulator.

    Science.gov (United States)

    Kwon, Jeong Hyun; Park, Junhong; Lee, Myung Keun; Park, Jeong Woo; Jeon, Yongmin; Shin, Jeong Bin; Nam, Minwoo; Kim, Choong-Ki; Choi, Yang-Kyu; Choi, Kyung Cheol

    2018-05-09

    The lack of reliable, transparent, and flexible electrodes and insulators for applications in thin-film transistors (TFTs) makes it difficult to commercialize transparent, flexible TFTs (TF-TFTs). More specifically, conventional high process temperatures and the brittleness of these elements have been hurdles in developing flexible substrates vulnerable to heat. Here, we propose electrode and insulator fabrication techniques considering process temperature, transmittance, flexibility, and environmental stability. A transparent and flexible indium tin oxide (ITO)/Ag/ITO (IAI) electrode and an Al 2 O 3 /MgO (AM)-laminated insulator were optimized at the low temperature of 70 °C for the fabrication of TF-TFTs on a polyethylene terephthalate (PET) substrate. The optimized IAI electrode with a sheet resistance of 7 Ω/sq exhibited the luminous transmittance of 85.17% and maintained its electrical conductivity after exposure to damp heat conditions because of an environmentally stable ITO capping layer. In addition, the electrical conductivity of IAI was maintained after 10 000 bending cycles with a tensile strain of 3% because of the ductile Ag film. In the metal/insulator/metal structure, the insulating and mechanical properties of the optimized AM-laminated film deposited at 70 °C were significantly improved because of the highly dense nanolaminate system, compared to those of the Al 2 O 3 film deposited at 70 °C. In addition, the amorphous indium-gallium-zinc oxide (a-IGZO) was used as the active channel for TF-TFTs because of its excellent chemical stability. In the environmental stability test, the ITO, a-IGZO, and AM-laminated films showed the excellent environmental stability. Therefore, our IGZO-based TFT with IAI electrodes and the 70 °C AM-laminated insulator was fabricated to evaluate robustness, transparency, flexibility, and process temperature, resulting in transfer characteristics comparable to those of an IGZO-based TFT with a 150 °C Al 2 O 3

  11. Fabrication of oriented wrinkles on polydopamine/polystyrene bilayer films.

    Science.gov (United States)

    Wang, Rong; Long, Yuhua; Zhu, Tang; Guo, Jing; Cai, Chao; Zhao, Ning; Xu, Jian

    2017-07-15

    Wrinkles exist widely in nature and our life. In this paper, wrinkles on polydopamine (PDA)/polystyrene (PS) bilayer films were formed by thermal annealing due to the different thermal coefficients of expansion of each layer. The factors that influenced the dimensions of wrinkles were studied. We found that oriented wrinkles could be formed if the bilayer films were patterned with micro-grooves, and the degree of the orientation depended on the thickness of the PDA and the dimensions of the grooves. Combined with the strong adhesion, biocompatibility and reactivity of PDA, the oriented wrinkles on PDA/PS patterned bilayers may find potential application in diffraction gratings, optical sensors and microfluidic devices. Copyright © 2017 Elsevier Inc. All rights reserved.

  12. Electrochemical properties of N-doped hydrogenated amorphous carbon films fabricated by plasma-enhanced chemical vapor deposition methods

    Energy Technology Data Exchange (ETDEWEB)

    Tanaka, Yoriko; Furuta, Masahiro; Kuriyama, Koichi; Kuwabara, Ryosuke; Katsuki, Yukiko [Division of Environmental Science and Engineering, Graduate School of Science and Engineering, Yamaguchi University, 1677-1 Yoshida, Yamaguchi-shi, Yamaguchi 753-8512 (Japan); Kondo, Takeshi [Department of Pure and Applied Chemistry, Faculty of Science and Technology, Tokyo University of Science, 2641 Yamazaki, Noda 278-8510 (Japan); Fujishima, Akira [Kanagawa Advanced Science and Technology (KAST), 3-2-1, Sakato, Takatsu-ku, Kawasaki-shi, Kanagawa 213-0012 (Japan); Honda, Kensuke, E-mail: khonda@yamaguchi-u.ac.j [Division of Environmental Science and Engineering, Graduate School of Science and Engineering, Yamaguchi University, 1677-1 Yoshida, Yamaguchi-shi, Yamaguchi 753-8512 (Japan)

    2011-01-01

    Nitrogen-doped hydrogenated amorphous carbon thin films (a-C:N:H, N-doped DLC) were synthesized with microwave-assisted plasma-enhanced chemical vapor deposition widely used for DLC coating such as the inner surface of PET bottles. The electrochemical properties of N-doped DLC surfaces that can be useful in the application as an electrochemical sensor were investigated. N-doped DLC was easily fabricated using the vapor of nitrogen contained hydrocarbon as carbon and nitrogen source. A N/C ratio of resulting N-doped DLC films was 0.08 and atomic ratio of sp{sup 3}/sp{sup 2}-bonded carbons was 25/75. The electrical resistivity and optical gap were 0.695 {Omega} cm and 0.38 eV, respectively. N-doped DLC thin film was found to be an ideal polarizable electrode material with physical stability and chemical inertness. The film has a wide working potential range over 3 V, low double-layer capacitance, and high resistance to electrochemically induced corrosion in strong acid media, which were the same level as those for boron-doped diamond (BDD). The charge transfer rates for the inorganic redox species, Fe{sup 2+/3+} and Fe(CN){sub 6}{sup 4-/3-} at N-doped DLC were sufficiently high. The redox reaction of Ce{sup 2+/3+} with standard potential higher than H{sub 2}O/O{sub 2} were observed due to the wider potential window. At N-doped DLC, the change of the kinetics of Fe(CN){sub 6}{sup 3-/4-} by surface oxidation is different from that at BDD. The rate of Fe(CN){sub 6}{sup 3-/4-} was not varied before and after oxidative treatment on N-doped DLC includes sp{sup 2} carbons, which indicates high durability of the electrochemical activity against surface oxidation.

  13. The fabrication and characterization of inkjet-printed polyaniline nanoparticle films

    International Nuclear Information System (INIS)

    Morrin, Aoife; Ngamna, Orawan; O'Malley, Eimer; Kent, Nigel; Moulton, Simon E.; Wallace, Gordon G.; Smyth, Malcolm R.; Killard, Anthony J.

    2008-01-01

    This paper reports on the fabrication and characterization of electrodes modified with conducting polymer nanoparticle films, produced via inkjet printing. The polyaniline nanoparticle formulations were deposited via a desktop inkjet printer onto screen-printed carbon-paste electrodes (SPE), polyethylene terephthalate (PET) and gold-PET and their morphology studied at a range of length scales using profilometry, scanning electron microscopy and atomic force microscopy. The deposited films were found to form continuous polymer films depending upon film thickness, which was in turn dependent on the number of prints performed. The inkjet-printed films exhibited a smooth morphology on the SPEs at the micro-dimensional scale, as a result of the aggradation and coalescing of the nanoparticles upon deposition. The resulting modified electrodes were both conductive and electroactive, possessing good reversible polyaniline electrochemistry. Such a combination of materials and processing offers the potential of producing a range of low cost, solid state devices such as sensors, actuators and electrochromic devices

  14. Fabrication and Film Qualification of Sr Modified Pb(Ca) TiO3 Thin Films

    International Nuclear Information System (INIS)

    Naw Hla Myat San; Khin Aye Thwe; Than Than Win; Yin Maung Maung; Ko Ko Kyaw Soe

    2011-12-01

    Strontium and calcium - modified lead titanate (Pb0.7 Ca0.15 Sr0.15 ) TiO3 (PCST)thin films were prepared by using spin coating technique. Phase transition of PCST was interpreted by means of Er-T characteristics. Process temperature dependence on micro-structure of PCST film was studied. Charge conduction mechanism of PCST thin film was also investigated for film qualification.

  15. Flame retardancy and ultraviolet resistance of silk fabric coated by graphene oxide

    OpenAIRE

    Ji Yi-Min; Cao Ying-Ying; Chen Guo-Qiang; Xing Tie-Ling

    2017-01-01

    Silk fabrics were coated by graphene oxide hydrosol in order to improve its flame retardancy and ultraviolet resistance. In addition, montmorillonoid was doped into the graphene oxide hydrosol to further improve the flame retardancy of silk fabrics. The flame retardancy and ultraviolet resistance were mainly characterized by limiting oxygen index, vertical flame test, smoke density test, and ultraviolet protection factor. The synergistic effect of graphene oxide and montmorillonoid on the the...

  16. Imprinting of metal receptors into multilayer polyelectrolyte films: fabrication and applications in marine antifouling

    NARCIS (Netherlands)

    Puniredd, S.R.; Janczewski, D.; Go, D.P.; Zhu, X.; Guo, S.; Teo, S.L-M.; Lee, S.S.C.; Vancso, Gyula J.

    2015-01-01

    Polymeric films constructed using the layer-by-layer (LbL) fabrication process were employed as a platform for metal ion immobilization and applied as a marine antifouling coating. The novel Cu2+ ion imprinting process described is based on the use of metal ion templates and LbL multilayer covalent

  17. Ready fabrication of thin-film electrodes from building nanocrystals for micro-supercapacitors.

    Science.gov (United States)

    Chen, Zheng; Weng, Ding; Wang, Xiaolei; Cheng, Yanhua; Wang, Ge; Lu, Yunfeng

    2012-04-18

    Thin-film pseudocapacitor electrodes with ultrafast lithium storage kinetics, high capacitance and excellent cycling stability were fabricated from monodispersed TiO(2) building nanocrystals, providing a novel approach towards next-generation micro-supercapacitor applications. This journal is © The Royal Society of Chemistry 2012

  18. In situ Oxidation of Ultrathin Silver Films on Ni(111)

    International Nuclear Information System (INIS)

    Meyer, A.; Flege, I.; Senanayake, S.; Kaemena, B.; Rettew, R.; Alamgir, F.; Falta, J.

    2011-01-01

    Oxidation of silver films of one- and two-monolayer thicknesses on the Ni(111) surface was investigated by low-energy electron microscopy at temperatures of 500 and 600 K. Additionally, intensity-voltage curves were measured in situ during oxidation to reveal the local film structure on a nanometer scale. At both temperatures, we find that exposure to molecular oxygen leads to the destabilization of the Ag film with subsequent relocation of the silver atoms to small few-layer-thick silver patches and concurrent evolution of NiO(111) regions. Subsequent exposure of the oxidized surface to ethylene initiates the transformation of bilayer islands back into monolayer islands, demonstrating at least partial reversibility of the silver relocation process at 600 K.

  19. A novel Graphene Oxide film: Synthesis and Dielectric properties

    Science.gov (United States)

    Canimkurbey, Betul; San, Sait Eren; Yasin, Muhammad; Köse, Muhammet Erkan

    In this work, we used Hummers method to synthesize Graphene Oxide (GO) and its parallel plate impedance spectroscopic technique to investigate dielectric properties. Graphene Oxide films were coated using drop casting method on ITO substrate. To analyze film morphology, atomic force microscopy was used. Dielectrics measurements of the samples were performed using impedance analyzer (HP-4194) in frequency range (100 Hz to 10MHz) at different temperatures. It was observed that the films' AC conductivity σac varied with angular frequency, ω as ωS, with Sdirect current (DC) and Correlated Barrier Hopping (CBH) conductivity mechanisms at low and high frequency ranges, respectively. Using solution processed Graphene Oxide will provide potential for organic electronic applications through its photon absorption and transmittance capability in the visible range and excellent electrical parameters.

  20. Ion beam analysis of PECVD silicon oxide thin films

    International Nuclear Information System (INIS)

    Fernandez-Lima, F.; Rodriguez, J.A.; Pedrero, E.; Fonseca Filho, H.D.; Llovera, A.; Riera, M.; Dominguez, C.; Behar, M.; Zawislak, F.C.

    2006-01-01

    A study of ion beam analysis techniques of plasma enhanced chemical vapor deposited (PECVD) silicon oxide thin films (1 μm thick) obtained from silane (SiH 4 ) and nitrous oxide (N 2 O) is reported. The film, elemental composition and surface morphology were determined as function of the reactant gas flow ratio, R = [N 2 O]/[SiH 4 ] in the 22-110 range using the Rutherford backscattering spectrometry, nuclear reaction analysis and atomic force microscopy techniques. The density of the films was determined by combining the RBS and thickness measurements. All the experiments were done at a deposition temperature of 300 deg. C. In all the cases almost stoichiometric oxides were obtained being the impurity content function of R. It was also observed that physical properties such as density, surface roughness and shape factor increase with R in the studied interval

  1. Fabrication of NiO/zirconium oxide nanofibers by electrospinning

    Energy Technology Data Exchange (ETDEWEB)

    Sundarrajan, Subramanian, E-mail: sundarnus1@gmail.com [Department of Mechanical Engineering, NUS, 117576 (Singapore); Venkatesan, Arunachalam; Agarwal, Satya R.; Shaik Anwar Ahamed, Nabeela Nasreen [Department of Mechanical Engineering, NUS, 117576 (Singapore); Ramakrishna, Seeram, E-mail: seeram@nus.edu.sg [Department of Mechanical Engineering, NUS, 117576 (Singapore); King Saud University, Riyadh 11451 (Saudi Arabia); Institute of Materials Research and Engineering, 117602 (Singapore)

    2014-12-01

    The electrospinning technique has been used to fabricate 1D inorganic–organic composite nanofibers from solutions containing poly(vinyl alcohol) (PVA) and suitable aqueous precursors of nickel and zirconium ions. Upon calcination, nickel oxide/zirconia nanofibers retained the original morphological features of as-spun nanofibers. X-ray diffraction was used to identify the crystalline nature of the final product and analytical tools such as Fourier transform infrared (FTIR) spectroscopy, scanning electron microscopy (SEM), transmission electron microscopy (TEM) and atomic force microscopy (AFM) were employed to elucidate the pathway of ceramic phase formation and the systematic evolution of morphological features in the as-spun and calcined fibers. These fibers will find potential applications in biomedical field. - Highlights: • PVA/NiO/zirconia composite nanofibers were synthesized via electrospinning. • Green processing of nanofibers using only water as solvent. • Calcination of composite nanofibers to yield ceramic nanofibers. • High aspect ratio nanofibers with diameters 106 ± 25 nm • The application of these fibers as dental composites and bone tissue engineering.

  2. Fabrication of cerium-doped yttrium aluminum garnet thin films by a mist CVD method

    Energy Technology Data Exchange (ETDEWEB)

    Murai, Shunsuke, E-mail: murai@dipole7.kuic.kyoto-u.ac.jp; Sato, Takafumi; Yao, Situ; Kamakura, Ryosuke; Fujita, Koji; Tanaka, Katsuhisa

    2016-02-15

    We synthesized thin films, consisting of yttrium aluminum garnet doped with Ce{sup 3+} (YAG:Ce), using the mist chemical vapor deposition (CVD) method, which allows the fabrication of high-quality thin films under atmospheric conditions without the use of vacuum equipment. Under a deposition rate of approximately 1 μm/h, the obtained thin films had a typical thickness of 2 μm. The XRD analysis indicated that the thin films consisted of single-phase YAG:Ce. The Rutherford backscattering confirmed the stoichiometry; the composition of the film was determined to be (Y, Ce){sub 3}Al{sub 5}O{sub 12}, with a Ce content of Ce/(Y+Ce)=2.5%. The YAG:Ce thin films exhibited fluorescence due to the 5d–4f electronic transitions characteristic of the Ce ions occupying the eight-coordinated dodecahedral sites in the YAG lattice. - Highlights: • We have synthesized thin films of yttrium aluminum garnet doped with Ce{sup 3+} (YAG:Ce) by using a mist chemical vapor deposition (CVD) method for the first time. • The thickness of the single-phase and stoichiometric thin film obtained by 2 h deposition and following heat treatments is 2 μm. • The thin film is porous but optically transparent, and shows yellow fluorescence upon irradiation with a blue light. • Mist-CVD is a green and sustainable technique that allows fabrication of high-quality thin films at atmospheric conditions without vacuum equipment.

  3. Fabrication and properties of SmFe2-PZT magnetoelectric thin films

    KAUST Repository

    Giouroudi, Ioanna

    2013-05-17

    Magnetoelectric (ME) thin film composites are attracting a continually increasing interest due to their unique features and potential applications in multifunctional microdevices and integrated units such as sensors, actuators and energy harvesting modules. By combining piezoelectric and highly magnetostrictive thin films, the potentialities of these materials increase. In this paper we report the fabrication of SmFe2 and PZT thin films and the investigation of their properties. First of all, a ~ 400 nm thin SmFe film was deposited on top of Si/SiO2 substrate by magnetron sputter deposition. Afterwards, a 140 nm Pt bottom electrode was sputtered on top of the SmFe film forming a bottom electrode. Spin coating was employed for the deposition of the 150 nm thin PZT layer. A PZT solution with 10 %Pb excess was utilized for this fabrication step. Finally, circular Pt top electrodes were sputtered as top electrodes. This paper focuses on the microstructure of the individual films characterized by X-Ray diffractometer (XRD) and scanning electron microscopy (SEM). A piezoelectric evaluation system, aixPES, with TF2000E analyzer component was used for the electric hysteresis measurements of PZT thin films and a vibrating sample magnetometer (VSM) was employed for the magnetic characterization of the SmFe. The developed thin films and the fabricated double layer SmFe-PZT exhibit both good ferromagnetic and piezoelectric responses which predict a promising ME composite structure. The quantitative chemical composition of the samples was confirmed by energy dispersive spectroscopy (EDX). © (2013) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.

  4. Fabrication and properties of SmFe2-PZT magnetoelectric thin films

    KAUST Repository

    Giouroudi, Ioanna; Alnassar, Mohammed; Kosel, Jü rgen

    2013-01-01

    Magnetoelectric (ME) thin film composites are attracting a continually increasing interest due to their unique features and potential applications in multifunctional microdevices and integrated units such as sensors, actuators and energy harvesting modules. By combining piezoelectric and highly magnetostrictive thin films, the potentialities of these materials increase. In this paper we report the fabrication of SmFe2 and PZT thin films and the investigation of their properties. First of all, a ~ 400 nm thin SmFe film was deposited on top of Si/SiO2 substrate by magnetron sputter deposition. Afterwards, a 140 nm Pt bottom electrode was sputtered on top of the SmFe film forming a bottom electrode. Spin coating was employed for the deposition of the 150 nm thin PZT layer. A PZT solution with 10 %Pb excess was utilized for this fabrication step. Finally, circular Pt top electrodes were sputtered as top electrodes. This paper focuses on the microstructure of the individual films characterized by X-Ray diffractometer (XRD) and scanning electron microscopy (SEM). A piezoelectric evaluation system, aixPES, with TF2000E analyzer component was used for the electric hysteresis measurements of PZT thin films and a vibrating sample magnetometer (VSM) was employed for the magnetic characterization of the SmFe. The developed thin films and the fabricated double layer SmFe-PZT exhibit both good ferromagnetic and piezoelectric responses which predict a promising ME composite structure. The quantitative chemical composition of the samples was confirmed by energy dispersive spectroscopy (EDX). © (2013) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.

  5. Fabrication of smooth patterned structures of refractory metals, semiconductors, and oxides via template stripping.

    Science.gov (United States)

    Park, Jong Hyuk; Nagpal, Prashant; McPeak, Kevin M; Lindquist, Nathan C; Oh, Sang-Hyun; Norris, David J

    2013-10-09

    The template-stripping method can yield smooth patterned films without surface contamination. However, the process is typically limited to coinage metals such as silver and gold because other materials cannot be readily stripped from silicon templates due to strong adhesion. Herein, we report a more general template-stripping method that is applicable to a larger variety of materials, including refractory metals, semiconductors, and oxides. To address the adhesion issue, we introduce a thin gold layer between the template and the deposited materials. After peeling off the combined film from the template, the gold layer can be selectively removed via wet etching to reveal a smooth patterned structure of the desired material. Further, we demonstrate template-stripped multilayer structures that have potential applications for photovoltaics and solar absorbers. An entire patterned device, which can include a transparent conductor, semiconductor absorber, and back contact, can be fabricated. Since our approach can also produce many copies of the patterned structure with high fidelity by reusing the template, a low-cost and high-throughput process in micro- and nanofabrication is provided that is useful for electronics, plasmonics, and nanophotonics.

  6. Preparation and Characterization of Some Nanometal Oxides Using Microwave Technique and Their Application to Cotton Fabrics

    Directory of Open Access Journals (Sweden)

    M. Gouda

    2015-01-01

    Full Text Available The objective of this paper is the synthesis of some nanometal oxides via microwave irradiation technique and their application to augment multifunctional properties of cotton fabric. Cotton fabrics containing nanometal oxides were prepared via a thiol-modification of cotton fabric samples and then dipped into the metal salt solutions precursors and transferred to the microwave oven. The surface morphology and quantitative analysis of the obtained modified cotton fabrics containing nanometal oxides were studied by scanning electron microscopy coupled with high energy dispersive X-ray (SEM-EDX. The shape and distribution of nanometal oxide inside the fabric samples were analyzed by transmission electron microscopy of cross-section fabric samples. The iron oxide nanoparticles had a nanosphere with particle size diameter 15–20 nm, copper oxide nanoparticles had a nanosphere with particle size diameter 25–30 nm, and cobalt oxide nanoparticles had a nanotube-like shape with a length of 100–150 nanometer and a diameter of ~58 nanometer, whereas the manganese oxide nanoparticles had a linear structure forming nanorods with a diameter of 50–55 nanometer and a length of 70–80 nanometers. Antibacterial activity was evaluated quantitatively against gram-positive bacteria such as Staphylococcus aureus and gram-negative bacteria such as Escherichia coli, UV-protection activity was analyzed using UV-DRS spectroscopy, and flame retardation of prepared fabric samples was evaluated according to the limiting oxygen index (LOI. Results revealed that the prepared fabric sample containing nanometal oxide possesses improved antibacterial, LOI, and UV-absorbing efficiency. Moreover, the metal oxide nanoparticles did not leach out the fabrics by washing even after 30 laundering washing cycles.

  7. Superlubricating graphene and graphene oxide films

    Science.gov (United States)

    Sumant, Anirudha V.; Erdemir, Ali; Choi, Junho; Berman, Diana

    2018-02-13

    A system and method for forming at least one of graphene and graphene oxide on a substrate and an opposed wear member. The system includes graphene and graphene oxide formed by an exfoliation process or solution processing method to dispose graphene and/or graphene oxide onto a substrate. The system further includes an opposing wear member disposed on another substrate and a gas atmosphere of an inert gas like N2, ambient, a humid atmosphere and a water solution.

  8. Monoamine oxidase B layer-by-layer film fabrication and characterization toward dopamine detection

    Energy Technology Data Exchange (ETDEWEB)

    Miyazaki, Celina Massumi; Pereira, Tamyris Paschoal [Universidade Federal de São Carlos, UFSCar, CCTS, Sorocaba, São Paulo (Brazil); Mascagni, Daniela Branco Tavares [Universidade Estadual de São Paulo — UNESP, Sorocaba, São Paulo (Brazil); Leite de Moraes, Marli [Universidade Federal de São Paulo, Unifesp, São José dos Campos, São Paulo (Brazil); Ferreira, Marystela, E-mail: marystela@ufscar.br [Universidade Federal de São Carlos, UFSCar, CCTS, Sorocaba, São Paulo (Brazil)

    2016-01-01

    In this work nanostructured film composites of the monoamine oxidase B (MAO-B) enzyme, free or encapsulated in liposomes, were fabricated by the layer-by-layer (LbL) self-assembly technique, employing polyethylene imine (PEI) as polycation. Initially, the MAO-B enzyme was incorporated into liposomes in order to preserve its enzymatic structure ensuring their activity and catalytic stability. The LbL film growth was monitored by surface plasmon resonance (SPR) by gold resonance angle shift analysis after each bilayer deposition. Subsequently, the films were applied as amperometric biosensors for dopamine detection using Prussian Blue (PB) as the electron mediator. The biosensor fabricated by MAO-B incorporated into liposomes composed of DPPG:POPG in the ratio (1:4) (w/w) showed the best performance with a sensitivity of 0.86 (μA cm{sup −2})/(mmol L{sup −1}) and a detection limit of 0.33 mmol L{sup −1}. - Highlights: • Monoamine oxidase B incorporation in liposomes was proposed to preserve the enzyme. • Layer-by-layer films composed of MAO-B (free and in liposomes) were fabricated. • Amperometric response using ITO/Prussian Blue covered with the MAO-B films was studied. • Sensitivity, limit of detection and apparent Michaelis–Menten constant were compared.

  9. Monoamine oxidase B layer-by-layer film fabrication and characterization toward dopamine detection

    International Nuclear Information System (INIS)

    Miyazaki, Celina Massumi; Pereira, Tamyris Paschoal; Mascagni, Daniela Branco Tavares; Leite de Moraes, Marli; Ferreira, Marystela

    2016-01-01

    In this work nanostructured film composites of the monoamine oxidase B (MAO-B) enzyme, free or encapsulated in liposomes, were fabricated by the layer-by-layer (LbL) self-assembly technique, employing polyethylene imine (PEI) as polycation. Initially, the MAO-B enzyme was incorporated into liposomes in order to preserve its enzymatic structure ensuring their activity and catalytic stability. The LbL film growth was monitored by surface plasmon resonance (SPR) by gold resonance angle shift analysis after each bilayer deposition. Subsequently, the films were applied as amperometric biosensors for dopamine detection using Prussian Blue (PB) as the electron mediator. The biosensor fabricated by MAO-B incorporated into liposomes composed of DPPG:POPG in the ratio (1:4) (w/w) showed the best performance with a sensitivity of 0.86 (μA cm −2 )/(mmol L −1 ) and a detection limit of 0.33 mmol L −1 . - Highlights: • Monoamine oxidase B incorporation in liposomes was proposed to preserve the enzyme. • Layer-by-layer films composed of MAO-B (free and in liposomes) were fabricated. • Amperometric response using ITO/Prussian Blue covered with the MAO-B films was studied. • Sensitivity, limit of detection and apparent Michaelis–Menten constant were compared.

  10. Nanostructured manganese oxide thin films as electrode material for supercapacitors

    Science.gov (United States)

    Xia, Hui; Lai, Man On; Lu, Li

    2011-01-01

    Electrochemical capacitors, also called supercapacitors, are alternative energy storage devices, particularly for applications requiring high power densities. Recently, manganese oxides have been extensively evaluated as electrode materials for supercapacitors due to their low cost, environmental benignity, and promising supercapacitive performance. In order to maximize the utilization of manganese oxides as the electrode material for the supercapacitors and improve their supercapacitive performance, the nanostructured manganese oxides have therefore been developed. This paper reviews the synthesis of the nanostructured manganese oxide thin films by different methods and the supercapacitive performance of different nanostructures.

  11. Properties of Spray Pyrolysied Copper Oxide Thin Films

    Directory of Open Access Journals (Sweden)

    S. S. Roy

    2017-02-01

    Full Text Available Copper oxide (CuO thin films were deposited on well cleaned glass substrates by spray pyrolysis technique (SPT from cupric acetate (Cu(CH3COO2.H2O precursor solutions of 0.05 – 0.15 M molar concentrations (MC at a substrate temperature of 350 °C and at an air pressure of 1 bar. Effect of varying MC on the surface morphology, structural optical and electrical properties of CuO thin films were investigated. XRD patterns of the prepared films revealed the formation of CuO thin films having monoclinic structure with the main CuO (111 orientation and crystalline size ranging from 8.02 to 9.05 nm was observed. The optical transmission of the film was found to decrease with the increase of MC. The optical band gap of the thin films for 0.10 M was fond to be 1.60 eV. The room temperature electrical resistivity varies from 31 and 24 ohm.cm for the films grown with MC of 0.05 and 0.10 M respectively. The change in resistivity of the films was studied with respect to the change in temperature was shown that semiconductor nature is present. This information is expected to underlie the successful development of CuO films for solar windows and other semi-conductor applications including gas sensors.

  12. Indium oxide thin-film transistors processed at low temperature via ultrasonic spray pyrolysis

    KAUST Repository

    Faber, Hendrik

    2015-01-14

    The use of ultrasonic spray pyrolysis is demonstrated for the growth of polycrystalline, highly uniform indium oxide films at temperatures in the range of 200-300 °C in air using an aqueous In(NO3)3 precursor solution. Electrical characterization of as-deposited films by field-effect measurements reveals a strong dependence of the electron mobility on deposition temperature. Transistors fabricated at ∼250 °C exhibit optimum performance with maximum electron mobility values in the range of 15-20 cm2 V -1 s-1 and current on/off ratio in excess of 106. Structural and compositional analysis of as-grown films by means of X-ray diffraction, diffuse scattering, and X-ray photoelectron spectroscopy reveal that layers deposited at 250 °C are denser and contain a reduced amount of hydroxyl groups as compared to films grown at either lower or higher temperatures. Microstructural analysis of semiconducting films deposited at 250 °C by high resolution cross-sectional transmission electron microscopy reveals that as-grown layers are extremely thin (∼7 nm) and composed of laterally large (30-60 nm) highly crystalline In2O3 domains. These unique characteristics of the In2O3 films are believed to be responsible for the high electron mobilities obtained from transistors fabricated at 250 °C. Our work demonstrates the ability to grow high quality low-dimensional In2O3 films and devices via ultrasonic spray pyrolysis over large area substrates while at the same time it provides guidelines for further material and device improvements.

  13. CuOX thin films by direct oxidation of Cu films deposited by physical vapor deposition

    Directory of Open Access Journals (Sweden)

    D. Santos-Cruz

    Full Text Available Thin films of Cu2O and CuO oxides were developed by direct oxidation of physical vapor deposited copper films in an open atmosphere by varying the temperature in the range between 250 and 400 °C. In this work, the influence of oxidation temperature on structural, optical and electrical properties of copper oxide films has been discussed. The characterization results revealed that at lower temperatures (<300 °C, it is feasible to obtained coper (I oxide whereas at temperatures higher than 300 °C, the copper (II oxide is formed. The band gap is found to vary in between 1.54 and 2.21 eV depending on the oxidation temperature. Both oxides present p-type electrical conductivity. The carrier concentration has been increased as a function of the oxidation temperature from 1.61 × 1012 at 250 °C to 6.8 × 1012 cm−3 at 400 °C. The mobility has attained its maximum of 34.5 cm2 V−1 s−1 at a temperature of 300 °C, and a minimum of 13.8 cm2 V−1 s−1 for 400 °C. Finally, the resistivity of copper oxide films decreases as a function of oxidation temperature from 5.4 × 106 to 2.4 × 105 Ω-cm at 250 and 400 °C, respectively. Keywords: PVD, Oxidizing annealed treatment, Non-toxic material

  14. Preparation of molybdenum oxide thin films by MOCVD

    International Nuclear Information System (INIS)

    Guerrero, R. Martinez; Garcia, J.R. Vargas; Santes, V.; Gomez, E.

    2007-01-01

    In this study, molybdenum oxide films were prepared in a horizontal hot-wall MOCVD apparatus using molybdenum dioxide acetylacetonate as precursor. The molybdenum precursor was synthesized from acetylacetone and molybdenum oxide powder. Thermal gravimetric (TG) and differential thermal analyses (DTA) of the precursor suggested the formation of molybdenum oxides around 430 o C (703 K). Thus, a range of deposition temperatures varying from 350 to 630 o C (623-903 K) was explored to investigate the effects on the nature of the molybdenum oxide films. X-ray diffraction (XRD) results showed that the films consisted of α-MoO 3 phase at deposition temperatures ranging from 400 to 560 o C (673-833 K). Crystalline α-MoO 3 films can be obtained from molybdenum dioxide acetylacetonate precursor, without need of a post-annealing treatment. The best crystalline quality was found in films having needle-like crystallites grown at deposition temperature of about 560 o C (833 K), which exhibit a strong (0 1 0) preferred orientation and a transparent visual appearance

  15. Preparation of molybdenum oxide thin films by MOCVD

    Energy Technology Data Exchange (ETDEWEB)

    Guerrero, R. Martinez [Depto. de Ingenieria Metalurgica, ESIQIE-IPN, Mexico 07300, D.F. (Mexico); Garcia, J.R. Vargas [Depto. de Ingenieria Metalurgica, ESIQIE-IPN, Mexico 07300, D.F. (Mexico)]. E-mail: rvargasga@ipn.mx; Santes, V. [CIIEMAD-IPN, Miguel Othon de Mendizabal 485, Mexico 07700, D.F. (Mexico); Gomez, E. [Instituto de Quimica-UNAM, Circuito Exterior-Ciudad Universitaria, Mexico 04510, D.F. (Mexico)

    2007-05-31

    In this study, molybdenum oxide films were prepared in a horizontal hot-wall MOCVD apparatus using molybdenum dioxide acetylacetonate as precursor. The molybdenum precursor was synthesized from acetylacetone and molybdenum oxide powder. Thermal gravimetric (TG) and differential thermal analyses (DTA) of the precursor suggested the formation of molybdenum oxides around 430 {sup o}C (703 K). Thus, a range of deposition temperatures varying from 350 to 630 {sup o}C (623-903 K) was explored to investigate the effects on the nature of the molybdenum oxide films. X-ray diffraction (XRD) results showed that the films consisted of {alpha}-MoO{sub 3} phase at deposition temperatures ranging from 400 to 560 {sup o}C (673-833 K). Crystalline {alpha}-MoO{sub 3} films can be obtained from molybdenum dioxide acetylacetonate precursor, without need of a post-annealing treatment. The best crystalline quality was found in films having needle-like crystallites grown at deposition temperature of about 560 {sup o}C (833 K), which exhibit a strong (0 1 0) preferred orientation and a transparent visual appearance.

  16. Spark counting technique with an aluminium oxide film

    International Nuclear Information System (INIS)

    Kawai, H.; Koga, T.; Morishima, H.; Niwa, T.; Nishiwaki, Y.

    1980-01-01

    Automatic spark counting of etch-pits on a polycarbonate film produced by nuclear fission fragments is now used for neutron monitoring in several countries. A method was developed using an aluminium oxide film instead of a polycarbonate as the neutron detector. Aluminium oxide films were prepared as follows: A cleaned aluminium plate as an anode and a nickel plate as a cathode were immersed in dilute sulfuric acid solution and electric current flowed between the electrodes at 12degC for 10-30 minutes. Electric current density was about 10 mA/cm 2 . The aluminium plate was then kept in boiling water for 10-30 minutes for sealing. The thickness of the aluminium oxide layer formed was about 1μm. The aluminium plate attached to a plate of suitable fissionable material, such as uranium or thorium, was irradiated with neutrons and set in a usual spark counter for fission track counting. One electrode was the aluminium plate and the other was an aluminized polyester sheet. Sparked pulses were counted with a usual scaler. The advantage of using spark counting with an aluminium oxide film for neutron monitoring is rapid measurement of neutron exposure, since chemical etching which is indispensable for spark counting with a polycarbonate detector film, is not needed. (H.K.)

  17. Valence control of cobalt oxide thin films by annealing atmosphere

    Energy Technology Data Exchange (ETDEWEB)

    Wang Shijing [School of Materials Science and Engineering, University of Science and Technology Beijing, No. 30 Xueyuan Road, Beijing 100083 (China); Zhang Boping, E-mail: bpzhang@ustb.edu.cn [School of Materials Science and Engineering, University of Science and Technology Beijing, No. 30 Xueyuan Road, Beijing 100083 (China); Zhao Cuihua; Li Songjie; Zhang Meixia; Yan Liping [School of Materials Science and Engineering, University of Science and Technology Beijing, No. 30 Xueyuan Road, Beijing 100083 (China)

    2011-02-01

    The cobalt oxide (CoO and Co{sub 3}O{sub 4}) thin films were successfully prepared using a spin-coating technique by a chemical solution method with CH{sub 3}OCH{sub 2}CH{sub 2}OH and Co(NO{sub 3}){sub 2}.6H{sub 2}O as starting materials. The grayish cobalt oxide films had uniform crystalline grains with less than 50 nm in diameter. The phase structure is able to tailor by controlling the annealing atmosphere and temperature, in which Co{sub 3}O{sub 4} thin film was obtained by annealing in air at 300-600, and N{sub 2} at 300, and transferred to CoO thin film by raising annealing temperature in N{sub 2}. The fitted X-ray photoelectron spectroscopy (XPS) spectra of the Co2p electrons are distinguishable from different valence states of cobalt oxide especially for their satellite structure. The valence control of cobalt oxide thin films by annealing atmosphere contributes to the tailored optical absorption property.

  18. Fabrication of polystyrene porous films with gradient pore structures

    International Nuclear Information System (INIS)

    Yan Hongwei; Zhang Lin; Li Bo; Yin Qiang

    2010-01-01

    Silica opals and multilayer heterostructures were fabricated by vertical deposition technique. Polystyrene inverse opals and gradient porous structures were obtained by colloidal templating, in order to control the pore microstructure of polymer porous materials. As shown in the scanning electron microscopy images, the polystyrene porous structures are precise replicas of inverse structures of the original templates. After being infiltrated with the polystyrene, the photonic stop-band position of the opal composite is redshifted compared with the original template, and it is blueshifted after the opal template being removed. The filling ratio of polystyrene was calculated according to the Bragg formula. (authors)

  19. Fabrication of micropillar substrates using replicas of alpha-particle irradiated and chemically etched PADC films

    International Nuclear Information System (INIS)

    Ng, C.K.M.; Chong, E.Y.W.; Roy, V.A.L.; Cheung, K.M.C.; Yeung, K.W.K.; Yu, K.N.

    2012-01-01

    We proposed a simple method to fabricate micropillar substrates. Polyallyldiglycol carbonate (PADC) films were irradiated by alpha particles and then chemically etched to form a cast with micron-scale spherical pores. A polydimethylsiloxane (PDMS) replica of this PADC film gave a micropillar substrate with micron-scale spherical pillars. HeLa cells cultured on such a micropillar substrate had significantly larger percentage of cells entering S-phase, attached cell numbers and cell spreading areas. - Highlights: ► We proposed a simple method to fabricate micropillar substrates. ► Polyallyldiglycol carbonate films were irradiated and etched to form casts. ► Polydimethylsiloxane replica then formed the micropillar substrates. ► Attachment and proliferation of HeLa cells were enhanced on these substrates.

  20. Fabrication of micropillar substrates using replicas of alpha-particle irradiated and chemically etched PADC films

    Energy Technology Data Exchange (ETDEWEB)

    Ng, C.K.M. [Department of Physics and Materials Science, City University of Hong Kong, Tat Chee Avenue, Kowloon Tong (Hong Kong); Chong, E.Y.W. [Department of Orthopaedics and Traumatology, University of Hong Kong (Hong Kong); Roy, V.A.L. [Department of Physics and Materials Science, City University of Hong Kong, Tat Chee Avenue, Kowloon Tong (Hong Kong); Cheung, K.M.C.; Yeung, K.W.K. [Department of Orthopaedics and Traumatology, University of Hong Kong (Hong Kong); Yu, K.N., E-mail: appetery@cityu.edu.hk [Department of Physics and Materials Science, City University of Hong Kong, Tat Chee Avenue, Kowloon Tong (Hong Kong)

    2012-07-15

    We proposed a simple method to fabricate micropillar substrates. Polyallyldiglycol carbonate (PADC) films were irradiated by alpha particles and then chemically etched to form a cast with micron-scale spherical pores. A polydimethylsiloxane (PDMS) replica of this PADC film gave a micropillar substrate with micron-scale spherical pillars. HeLa cells cultured on such a micropillar substrate had significantly larger percentage of cells entering S-phase, attached cell numbers and cell spreading areas. - Highlights: Black-Right-Pointing-Pointer We proposed a simple method to fabricate micropillar substrates. Black-Right-Pointing-Pointer Polyallyldiglycol carbonate films were irradiated and etched to form casts. Black-Right-Pointing-Pointer Polydimethylsiloxane replica then formed the micropillar substrates. Black-Right-Pointing-Pointer Attachment and proliferation of HeLa cells were enhanced on these substrates.

  1. Monoamine oxidase B layer-by-layer film fabrication and characterization toward dopamine detection.

    Science.gov (United States)

    Miyazaki, Celina Massumi; Pereira, Tamyris Paschoal; Mascagni, Daniela Branco Tavares; de Moraes, Marli Leite; Ferreira, Marystela

    2016-01-01

    In this work nanostructured film composites of the monoamine oxidase B (MAO-B) enzyme, free or encapsulated in liposomes, were fabricated by the layer-by-layer (LbL) self-assembly technique, employing polyethylene imine (PEI) as polycation. Initially, the MAO-B enzyme was incorporated into liposomes in order to preserve its enzymatic structure ensuring their activity and catalytic stability. The LbL film growth was monitored by surface plasmon resonance (SPR) by gold resonance angle shift analysis after each bilayer deposition. Subsequently, the films were applied as amperometric biosensors for dopamine detection using Prussian Blue (PB) as the electron mediator. The biosensor fabricated by MAO-B incorporated into liposomes composed of DPPG:POPG in the ratio (1:4) (w/w) showed the best performance with a sensitivity of 0.86 (μA cm(-2))/(mmol L(-1)) and a detection limit of 0.33 mmol L(-1).

  2. Comparison of topotactic fluorination methods for complex oxide films

    Science.gov (United States)

    Moon, E. J.; Choquette, A. K.; Huon, A.; Kulesa, S. Z.; Barbash, D.; May, S. J.

    2015-06-01

    We have investigated the synthesis of SrFeO3-αFγ (α and γ ≤ 1) perovskite films using topotactic fluorination reactions utilizing poly(vinylidene fluoride) as a fluorine source. Two different fluorination methods, a spin-coating and a vapor transport approach, were performed on as-grown SrFeO2.5 films. We highlight differences in the structural, compositional, and optical properties of the oxyfluoride films obtained via the two methods, providing insight into how fluorination reactions can be used to modify electronic and optical behavior in complex oxide heterostructures.

  3. Comparison of topotactic fluorination methods for complex oxide films

    Energy Technology Data Exchange (ETDEWEB)

    Moon, E. J., E-mail: em582@drexel.edu; Choquette, A. K.; Huon, A.; Kulesa, S. Z.; May, S. J., E-mail: smay@coe.drexel.edu [Department of Materials Science and Engineering, Drexel University, Philadelphia, Pennsylvania 19104 (United States); Barbash, D. [Centralized Research Facilities, Drexel University, Philadelphia, Pennsylvania 19104 (United States)

    2015-06-01

    We have investigated the synthesis of SrFeO{sub 3−α}F{sub γ} (α and γ ≤ 1) perovskite films using topotactic fluorination reactions utilizing poly(vinylidene fluoride) as a fluorine source. Two different fluorination methods, a spin-coating and a vapor transport approach, were performed on as-grown SrFeO{sub 2.5} films. We highlight differences in the structural, compositional, and optical properties of the oxyfluoride films obtained via the two methods, providing insight into how fluorination reactions can be used to modify electronic and optical behavior in complex oxide heterostructures.

  4. Rf reactive sputtering of indium-tin-oxide films

    International Nuclear Information System (INIS)

    Tvarozek, V.; Novotny, I.; Harman, R.; Kovac, J.

    1986-01-01

    Films of indium-tin-oxide (ITO) have been deposited by rf reactive diode sputtering of metallic InSn alloy targets, or ceramic ITO targets, in an Ar and Ar+0 2 atmosphere. Electrical as well as optical properties of ITO films were controlled by varying sputtering parameters and by post-deposition heat-treatment in Ar, H 2 , N 2 , H 2 +N 2 ambients. The ITO films exhibited low resistivity approx. 2 x 10 -4 Ω cm, high transmittance approx. 90% in the visible spectral region and high reflectance approx. 80% in the near infra-red region. (author)

  5. Morphology selection for cupric oxide thin films by electrodeposition.

    Science.gov (United States)

    Dhanasekaran, V; Mahalingam, T; Chandramohan, R

    2011-10-01

    Polycrystalline cupric oxide thin films were deposited using alkaline solution bath employing cathodic electrodeposition method. The thin films were electrodeposited at various solution pH. The surface morphology and elemental analyzes of the films were studied using scanning electron microscopy (SEM) and energy dispersive X-ray analysis, respectively. SEM studies revealed that the surface morphology could be tailored suitably by adjusting the pH value during deposition. Mesh average on multiple lattice mode atomic force microscopy image was obtained and reported. Copyright © 2011 Wiley-Liss, Inc.

  6. Comparison of topotactic fluorination methods for complex oxide films

    Directory of Open Access Journals (Sweden)

    E. J. Moon

    2015-06-01

    Full Text Available We have investigated the synthesis of SrFeO3−αFγ (α and γ ≤ 1 perovskite films using topotactic fluorination reactions utilizing poly(vinylidene fluoride as a fluorine source. Two different fluorination methods, a spin-coating and a vapor transport approach, were performed on as-grown SrFeO2.5 films. We highlight differences in the structural, compositional, and optical properties of the oxyfluoride films obtained via the two methods, providing insight into how fluorination reactions can be used to modify electronic and optical behavior in complex oxide heterostructures.

  7. Surface and sub-surface thermal oxidation of thin ruthenium films

    Energy Technology Data Exchange (ETDEWEB)

    Coloma Ribera, R.; Kruijs, R. W. E. van de; Yakshin, A. E.; Bijkerk, F. [MESA+ Institute for Nanotechnology, University of Twente, P.O. Box 217, 7500 AE Enschede (Netherlands); Kokke, S.; Zoethout, E. [FOM Dutch Institute for Fundamental Energy Research (DIFFER), P.O. Box 1207, 3430 BE Nieuwegein (Netherlands)

    2014-09-29

    A mixed 2D (film) and 3D (nano-column) growth of ruthenium oxide has been experimentally observed for thermally oxidized polycrystalline ruthenium thin films. Furthermore, in situ x-ray reflectivity upon annealing allowed the detection of 2D film growth as two separate layers consisting of low density and high density oxides. Nano-columns grow at the surface of the low density oxide layer, with the growth rate being limited by diffusion of ruthenium through the formed oxide film. Simultaneously, with the growth of the columns, sub-surface high density oxide continues to grow limited by diffusion of oxygen or ruthenium through the oxide film.

  8. Effects of Thermal Annealing Conditions on Cupric Oxide Thin Film

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Hyo Seon; Oh, Hee-bong; Ryu, Hyukhyun [Inje University, Gimhae (Korea, Republic of); Lee, Won-Jae [Dong-Eui University, Busan (Korea, Republic of)

    2015-07-15

    In this study, cupric oxide (CuO) thin films were grown on fluorine doped tin oxide(FTO) substrate by using spin coating method. We investigated the effects of thermal annealing temperature and thermal annealing duration on the morphological, structural, optical and photoelectrochemical properties of the CuO film. From the results, we could find that the morphologies, grain sizes, crystallinity and photoelectrochemical properties were dependent on the annealing conditions. As a result, the maximum photocurrent density of -1.47 mA/cm{sup 2} (vs. SCE) was obtained from the sample with the thermal annealing conditions of 500 ℃ and 40 min.

  9. Fabrication of 3D Microfluidic Devices by Thermal Bonding of Thin Poly(methyl methacrylate) Films

    KAUST Repository

    Perez, Paul

    2012-07-01

    The use of thin-film techniques for the fabrication of microfluidic devices has gained attention over the last decade, particularly for three-dimensional channel structures. The reasons for this include effective use of chip volume, mechanical flexibility, dead volume reduction, enhanced design capabilities, integration of passive elements, and scalability. Several fabrication techniques have been adapted for use on thin films: laser ablation and hot embossing are popular for channel fabrication, and lamination is widely used for channel enclosure. However, none of the previous studies have been able to achieve a strong bond that is reliable under moderate positive pressures. The present work aims to develop a thin-film process that provides design versatility, speed, channel profile homogeneity, and the reliability that others fail to achieve. The three building blocks of the proposed baseline were fifty-micron poly(methyl methacrylate) thin films as substrates, channel patterning by laser ablation, and device assembly by thermal-fusion bonding. Channel fabrication was characterized and tuned to produce the desired dimensions and surface roughness. Thermal bonding was performed using an adapted mechanical testing device and optimized to produce the maximum bonding strength without significant channel deformation. Bonding multilayered devices, incorporating conduction lines, and integrating various types of membranes as passive elements demonstrated the versatility of the process. Finally, this baseline was used to fabricate a droplet generator and a DNA detection chip based on micro-bead agglomeration. It was found that a combination of low laser power and scanning speed produced channel surfaces with better uniformity than those obtained with higher values. In addition, the implemented bonding technique provided the process with the most reliable bond strength reported, so far, for thin-film microfluidics. Overall, the present work proved to be versatile

  10. Formation and microstructure of nickel oxide films

    Energy Technology Data Exchange (ETDEWEB)

    Marcius, Marijan [Ruder Boskovic Institute, P.O. Box 180, HR-10002 Zagreb (Croatia); Ristic, Mira, E-mail: ristic@irb.hr [Ruder Boskovic Institute, P.O. Box 180, HR-10002 Zagreb (Croatia); Ivanda, Mile; Music, Svetozar [Ruder Boskovic Institute, P.O. Box 180, HR-10002 Zagreb (Croatia)

    2012-11-15

    Highlights: Black-Right-Pointing-Pointer Difference in NiO films formed on Ni plate or glass substrate were found. Black-Right-Pointing-Pointer NiO particle sizes on Ni plate changed from nano to micron dimensions. Black-Right-Pointing-Pointer NiO particle sizes on glass substrate changed from {approx}16 to {approx}27 nm. Black-Right-Pointing-Pointer Raman and UV/Vis/NIR spectra are related to the microstructure of NiO films. - Abstract: The formation and microstructure of NiO films on different substrates were monitored using XRD, Raman, UV/Vis/NIR and FE-SEM/EDS techniques. The formation of NiO films on Ni plates in air atmosphere between 400 and 800 Degree-Sign C was confirmed by XRD and Raman spectroscopy. The origin of Raman bands and corresponding Raman shifts in the samples are discussed. An increase in the size of NiO particles in the films from nano to micro dimensions was demonstrated. A change in the atomic ratio Ni:O with an increase in heating temperature was observed. Polished Ni plates coated with a thin Ni-acetate layer upon heating at high temperatures gave similar NiO microstructures on the surface like in the case of non-treated Ni plates. Glass substrates coated with thin Ni-acetate films upon heating between 400 and 800 Degree-Sign C yielded pseudospherical NiO nanoparticles. The dominant Raman band as an indicator of NiO formation on a glass substrate was shown. The formation of NiO nanoparticles on glass substrates with maximum size distribution from 16 to 27 nm in a broad temperature range from 400 to 800 Degree-Sign C can be explained by the absence of a constant source of metallic nickel which was present in the case of Ni plates.

  11. High-Performance Screen-Printed Thermoelectric Films on Fabrics.

    Science.gov (United States)

    Shin, Sunmi; Kumar, Rajan; Roh, Jong Wook; Ko, Dong-Su; Kim, Hyun-Sik; Kim, Sang Il; Yin, Lu; Schlossberg, Sarah M; Cui, Shuang; You, Jung-Min; Kwon, Soonshin; Zheng, Jianlin; Wang, Joseph; Chen, Renkun

    2017-08-04

    Printing techniques could offer a scalable approach to fabricate thermoelectric (TE) devices on flexible substrates for power generation used in wearable devices and personalized thermo-regulation. However, typical printing processes need a large concentration of binder additives, which often render a detrimental effect on electrical transport of the printed TE layers. Here, we report scalable screen-printing of TE layers on flexible fiber glass fabrics, by rationally optimizing the printing inks consisting of TE particles (p-type Bi 0.5 Sb 1.5 Te 3 or n-type Bi 2 Te 2.7 Se 0.3 ), binders, and organic solvents. We identified a suitable binder additive, methyl cellulose, which offers suitable viscosity for printability at a very small concentration (0.45-0.60 wt.%), thus minimizing its negative impact on electrical transport. Following printing, the binders were subsequently burnt off via sintering and hot pressing. We found that the nanoscale defects left behind after the binder burnt off became effective phonon scattering centers, leading to low lattice thermal conductivity in the printed n-type material. With the high electrical conductivity and low thermal conductivity, the screen-printed TE layers showed high room-temperature ZT values of 0.65 and 0.81 for p-type and n-type, respectively.

  12. Bismuth iron oxide thin films using atomic layer deposition of alternating bismuth oxide and iron oxide layers

    Energy Technology Data Exchange (ETDEWEB)

    Puttaswamy, Manjunath; Vehkamäki, Marko [University of Helsinki, Department of Chemistry, P.O. Box 55, FI-00014 Helsinki (Finland); Kukli, Kaupo, E-mail: kaupo.kukli@helsinki.fi [University of Helsinki, Department of Chemistry, P.O. Box 55, FI-00014 Helsinki (Finland); University of Tartu, Institute of Physics, W. Ostwald 1, EE-50411 Tartu (Estonia); Dimri, Mukesh Chandra [National Institute of Chemical Physics and Biophysics, Akadeemia tee 23, EE-12618 Tallinn (Estonia); Kemell, Marianna; Hatanpää, Timo; Heikkilä, Mikko J. [University of Helsinki, Department of Chemistry, P.O. Box 55, FI-00014 Helsinki (Finland); Mizohata, Kenichiro [University of Helsinki, Department of Physics, P.O. Box 64, FI-00014 Helsinki (Finland); Stern, Raivo [National Institute of Chemical Physics and Biophysics, Akadeemia tee 23, EE-12618 Tallinn (Estonia); Ritala, Mikko; Leskelä, Markku [University of Helsinki, Department of Chemistry, P.O. Box 55, FI-00014 Helsinki (Finland)

    2016-07-29

    Bismuth iron oxide films with varying contributions from Fe{sub 2}O{sub 3} or Bi{sub 2}O{sub 3} were prepared using atomic layer deposition. Bismuth (III) 2,3-dimethyl-2-butoxide, was used as the bismuth source, iron(III) tert-butoxide as the iron source and water vapor as the oxygen source. The films were deposited as stacks of alternate Bi{sub 2}O{sub 3} and Fe{sub 2}O{sub 3} layers. Films grown at 140 °C to the thickness of 200–220 nm were amorphous, but crystallized upon post-deposition annealing at 500 °C in nitrogen. Annealing of films with intermittent bismuth and iron oxide layers grown to different thicknesses influenced their surface morphology, crystal structure, composition, electrical and magnetic properties. Implications of multiferroic performance were recognized in the films with the remanent charge polarization varying from 1 to 5 μC/cm{sup 2} and magnetic coercivity varying from a few up to 8000 A/m. - Highlights: • Bismuth iron oxide thin films were grown by atomic layer deposition at 140 °C. • The major phase formed in the films upon annealing at 500 °C was BiFeO{sub 3}. • BiFeO{sub 3} films and films containing excess Bi favored electrical charge polarization. • Slight excess of iron oxide enhanced saturative magnetization behavior.

  13. Fast electrochemical deposition of Ni(OH)2 precursor involving water electrolysis for fabrication of NiO thin films

    Science.gov (United States)

    Koyama, Miki; Ichimura, Masaya

    2018-05-01

    Ni(OH)2 precursor films were deposited by galvanostatic electrochemical deposition (ECD), and NiO thin films were fabricated by annealing in air. The effects of the deposition current densities were studied in a range that included current densities high enough to electrolyze water and generate hydrogen bubbles. The films fabricated by ECD involving water electrolysis had higher transparency and smoother surface morphology than those deposited with lower current densities. In addition, the annealed NiO films clearly had preferred (111) orientation when the deposition was accompanied by water electrolysis. p-type conduction was confirmed for the annealed films.

  14. Fabrication of nanochannels on polyimide films using dynamic plowing lithography

    Science.gov (United States)

    Stoica, Iuliana; Barzic, Andreea Irina; Hulubei, Camelia

    2017-12-01

    Three distinct polyimide films were analyzed from the point of view of their morphology in order to determine if their surface features can be adapted for applications where surface anisotropy is mandatory. Channels of nanometric dimensions were created on surface of the specimens by using a less common atomic force microscopy (AFM) method, namely Dynamic Plowing Lithography (DPL). The changes generated by DPL procedure were monitored through the surface texture and other functional parameters, denoting the surface orientation degree and also bearing and fluid retention properties. The results revealed that in the same nanolithography conditions, the diamine and dianhydride moieties have affected the characteristics of the nanochannels. This was explained based on the aliphatic/aromatic nature of the monomers and the backbone flexibility. The reported data are of great importance in designing custom nanostructures with enhanced anisotropy on surface of polyimide films for liquid crystal orientation or guided cell growth purposes. At the end, to track the effect of the nanolithography process on the tip sharpness, degradation and contamination, the blind tip reconstruction was performed on AFM probe, before and after lithography experiments, using TGT1 test grating AFM image.

  15. Tungsten oxide proton conducting films for low-voltage transparent oxide-based thin-film transistors

    International Nuclear Information System (INIS)

    Zhang, Hongliang; Wan, Qing; Wan, Changjin; Wu, Guodong; Zhu, Liqiang

    2013-01-01

    Tungsten oxide (WO x ) electrolyte films deposited by reactive magnetron sputtering showed a high room temperature proton conductivity of 1.38 × 10 −4 S/cm with a relative humidity of 60%. Low-voltage transparent W-doped indium-zinc-oxide thin-film transistors gated by WO x -based electrolytes were self-assembled on glass substrates by one mask diffraction method. Enhancement mode operation with a large current on/off ratio of 4.7 × 10 6 , a low subthreshold swing of 108 mV/decade, and a high field-effect mobility 42.6 cm 2 /V s was realized. Our results demonstrated that WO x -based proton conducting films were promising gate dielectric candidates for portable low-voltage oxide-based devices.

  16. Interface and oxide traps in high-κ hafnium oxide films

    International Nuclear Information System (INIS)

    Wong, H.; Zhan, N.; Ng, K.L.; Poon, M.C.; Kok, C.W.

    2004-01-01

    The origins of the interface trap generation and the effects of thermal annealing on the interface and bulk trap distributions are studied in detail. We found that oxidation of the HfO 2 /Si interface, removal of deep trap centers, and crystallization of the as-deposited film will take place during the post-deposition annealing (PDA). These processes will result in the removal of interface traps and deep oxide traps and introduce a large amount of shallow oxide traps at the grain boundaries of the polycrystalline film. Thus, trade-off has to be made in considering the interface trap density and oxide trap density when conducting PDA. In addition, the high interface trap and oxide trap densities of the HfO 2 films suggest that we may have to use the SiO 2 /HfO 2 stack or hafnium silicate structure for better device performance

  17. Monodispersed macroporous architecture of nickel-oxide film as an anode material for thin-film lithium-ion batteries

    International Nuclear Information System (INIS)

    Wu, Mao-Sung; Lin, Ya-Ping

    2011-01-01

    A nickel-oxide film with monodispersed open macropores was prepared on a stainless-steel substrate by electrophoretic deposition of a polystyrene-sphere monolayer followed by anodic electrodeposition of nickel oxy-hydroxide. The deposited films convert to cubic nickel oxide after annealing at 400 o C for 1 h. Galvanostatic charge and discharge results indicate that the nickel-oxide film with monodispersed open macropores is capable of delivering a higher capacity than the bare nickel-oxide film, especially in high-rate charge and discharge processes. The lithiation capacity of macroporous nickel oxide reaches 1620 mA h g -1 at 1 C current discharge and decreases to 990 mA h g -1 at 15 C current discharge. The presence of monodispersed open macropores in the nickel-oxide film might facilitate the electrolyte penetration, diffusion, and migration. Electrochemical reactions between nickel oxide and lithium ions are therefore markedly improved by this tailored film architecture.

  18. Direct Fabrication of Inkjet-Printed Dielectric Film for Metal-Insulator-Metal Capacitors

    Science.gov (United States)

    Cho, Cheng-Lin; Kao, Hsuan-ling; Wu, Yung-Hsien; Chang, Li-Chun; Cheng, Chun-Hu

    2018-01-01

    In this study, an inkjet-printed dielectric film that used a polymer-based SU-8 ink was fabricated for use in a metal-insulator-metal (MIM) capacitor. Thermal treatment of the inkjet-printed SU-8 polymer film affected its surface morphology, chemical structure, and surface wettability. A 20-min soft-bake at 60°C was applied to eliminate inkjet-printed bubbles and ripples. The ultraviolet-exposed SU-8 polymer film was crosslinked at temperatures between 120°C and 220°C and became disordered at 270°C, demonstrated using Fourier-transform infrared spectroscopy. A maximum SU-8 polymer film hard-bake temperature of 120°C was identified, and a printing process was subsequently employed because the appropriate water contact angle of the printed film was 79°. Under the appropriate inkjet printing conditions, the two-transmission-line method was used to extract the dielectric and electrical properties of the SU-8 polymer film, and the electrical behavior of the fabricated MIM capacitor was also characterized.

  19. MgB2 thick films on three-dimensional structures fabricated by HPCVD

    Science.gov (United States)

    Guo, Zhengshan; Cai, Xingwei; Liao, Xuebin; Chen, Yiling; Yang, Can; Niu, Ruirui; Luo, Wenhao; Huang, Zigeng; Feng, Qingrong; Gan, Zizhao

    2018-06-01

    Magnetic shielding has been a key factor in the measurement of ultra-weak magnetic fields, especially for shielding from low frequency electromagnetic noise. With the recent development of superconducting quantum interference devices, superconducting magnetic shielding has become an important area of research. MgB2 has shown great potential in magnetic shielding for its remarkable superconducting properties, the feasibility of its use in this capacity having been demonstrated by MgB2 bulk samples. However, the potential for application of such bulk samples is limited. In this work, we have investigated the possibility of the fabrication of MgB2 films on three-dimensional (3D) structures using a hybrid physical‑chemical vapor deposition system. MgB2 films 10 μm thick have been fabricated on the outer surface of a polycrystalline Al2O3 cylinder. The deposited film showed a transition temperature (TC) of 39 K and J C of 5.1 × 105 A · cm‑2, which are comparable to those of planar MgB2 films. This work shows the feasibility of depositing MgB2 films onto a 3D structure, and sheds light on the potential use of MgB2 films in superconducting magnetic shielding.

  20. Low temperature fabrication of barium titanate hybrid films and their dielectric properties

    International Nuclear Information System (INIS)

    Kobayashi, Yoshio; Saito, Hirobumi; Kinoshita, Takafumi; Nagao, Daisuke; Konno, Mikio

    2011-01-01

    A method for incorporating BT nano-crystalline into barium titanate (BT) films is proposed for a low temperature fabrication of high dielectric constant films. BT nanoparticles were synthesized by hydrolysis of a BT complex alkoxide in 2-methoxyethanol (ME)/ethanol cosolvent. As the ME volume fraction in the cosolvent (ME fraction) increased from 0 to 100%, the particle and crystal sizes tended to increase from 13.4 to 30.2 nm and from 15.8 to 31.4 nm, respectively, and the particle dispersion in the solution became more improved. The BT particles were mixed with BT complex alkoxide dissolved in an ME/ethanol cosolvent for preparing a precursor solution that was then spin-coated on a Pt substrate and dried at 150 o C. The dielectric constant of the spin-coated BT hybrid film increased with an increase in the volume fraction of the BT particles in the film. The dissipation factor of the hybrid film tended to decrease with an increase in the ME fraction in the precursor solution. The hybrid film fabricated at a BT fraction of 30% and an ME fraction of 25% attained a dielectric constant as high as 94.5 with a surface roughness of 14.0 nm and a dissipation factor of 0.11.

  1. Simple and cost-effective fabrication of highly flexible, transparent superhydrophobic films with hierarchical surface design.

    Science.gov (United States)

    Kim, Tae-Hyun; Ha, Sung-Hun; Jang, Nam-Su; Kim, Jeonghyo; Kim, Ji Hoon; Park, Jong-Kweon; Lee, Deug-Woo; Lee, Jaebeom; Kim, Soo-Hyung; Kim, Jong-Man

    2015-03-11

    Optical transparency and mechanical flexibility are both of great importance for significantly expanding the applicability of superhydrophobic surfaces. Such features make it possible for functional surfaces to be applied to various glass-based products with different curvatures. In this work, we report on the simple and potentially cost-effective fabrication of highly flexible and transparent superhydrophobic films based on hierarchical surface design. The hierarchical surface morphology was easily fabricated by the simple transfer of a porous alumina membrane to the top surface of UV-imprinted polymeric micropillar arrays and subsequent chemical treatments. Through optimization of the hierarchical surface design, the resultant superhydrophobic films showed superior surface wetting properties (with a static contact angle of >170° and contact angle hysteresis of 82% at 550 nm wavelength). The superhydrophobic films were also experimentally found to be robust without significant degradation in the superhydrophobicity, even under repetitive bending and pressing for up to 2000 cycles. Finally, the practical usability of the proposed superhydorphobic films was clearly demonstrated by examining the antiwetting performance in real time while pouring water on the film and submerging the film in water.

  2. Polyaniline-stabilized electromagnetic wave absorption composites of reduced graphene oxide on magnetic carbon nanotube film

    Science.gov (United States)

    Li, Jinsong; Duan, Yan; Lu, Weibang; Chou, Tsu-Wei

    2018-04-01

    A multi-layered composite with exceptionally high electromagnetic wave-absorbing capacity and performance stability was fabricated via the facile electrophoresis of a reduced graphene oxide network on carbon nanotube (CNT)-Fe3O4-polyaniline (PANI) film. Minimum reflection loss (RL) of -53.2 dB and absorbing bandwidth of 5.87 GHz (graphene-based absorbers. In particular, comparing to the original composites, the minimum RL and bandwidth (< -10 dB) maintains 82.5% and 99.7%, respectively, after 20 h charge/discharge cycling, demonstrating high environmental suitability.

  3. Solid-state electrochromic cell with anodic iridium oxide film electrodes

    International Nuclear Information System (INIS)

    Dautremont-Smith, W.C.; Beni, G.; Schiavone, L.M.; Shay, J.L.

    1979-01-01

    A new solid-state electrochromic cell has been fabricated using an anodic iridium oxide film (AIROF) display electrode. The cell has the symmetric sandwich structure AIROFvertical-barNafionvertical-barAIROF, with the Nafion solid electrolyte opacified by an in situ precipitation technique. A symmetric square-wave voltage of 1.5 V amplitude produces clearly perceivable color changes from pale to dark blue-gray in approx. =1 sec when viewed in diffuse reflection. Good open-circuit optical memory is exhibited:

  4. Cyclical Annealing Technique To Enhance Reliability of Amorphous Metal Oxide Thin Film Transistors.

    Science.gov (United States)

    Chen, Hong-Chih; Chang, Ting-Chang; Lai, Wei-Chih; Chen, Guan-Fu; Chen, Bo-Wei; Hung, Yu-Ju; Chang, Kuo-Jui; Cheng, Kai-Chung; Huang, Chen-Shuo; Chen, Kuo-Kuang; Lu, Hsueh-Hsing; Lin, Yu-Hsin

    2018-02-26

    This study introduces a cyclical annealing technique that enhances the reliability of amorphous indium-gallium-zinc-oxide (a-IGZO) via-type structure thin film transistors (TFTs). By utilizing this treatment, negative gate-bias illumination stress (NBIS)-induced instabilities can be effectively alleviated. The cyclical annealing provides several cooling steps, which are exothermic processes that can form stronger ionic bonds. An additional advantage is that the total annealing time is much shorter than when using conventional long-term annealing. With the use of cyclical annealing, the reliability of the a-IGZO can be effectively optimized, and the shorter process time can increase fabrication efficiency.

  5. Dielectric property study of poly(4-vinylphenol)-graphene oxide nanocomposite thin film

    Science.gov (United States)

    Roy, Dhrubojyoti

    2018-05-01

    Thin film capacitor device having a sandwich structure of indium tin oxide (ITO)-coated glass/polymer or polymer nanocomposite /silver has been fabricated and their dielectric and leakage current properties has been studied. The dielectric properties of the capacitors were characterized for frequencies ranging from 1 KHz to 1 MHz. 5 wt% Poly(4-vinylphenol)(PVPh)-Graphene (GO) nanocomposite exhibited an increase in dielectric constant to 5.6 and small rise in dielectric loss to around˜0.05 at 10 KHz w.r.t polymer. The DC conductivity measurements reveal rise of leakage current in nanocomposite.

  6. Visible-blind ultraviolet photodiode fabricated by UV oxidation of metallic zinc on p-Si

    International Nuclear Information System (INIS)

    Zhang, Dongyuan; Uchida, Kazuo; Nozaki, Shinji

    2015-01-01

    A UV photodiode fabricated by the UV oxidation of a metallic zinc thin film on p-Si has manifested unique photoresponse characteristics. The electron concentration found by the Hall measurement was 3 × 10 16  cm −3 , and such a low electron concentration resulted in a low visible photoluminescence. UV illumination enhances the oxidation at low temperatures and decreases the concentration of the oxygen vacancies. The I-V characteristic showed a good rectification with a four-order magnitude difference in the forward and reverse currents at 2 V, and its linear and frequency independent C −2 –V characteristic confirmed an abrupt pn junction. The photoresponse showed a visible blindness with a responsivity ratio of UV and visible light as high as 100. Such a visible-blind photoresponse was attributed to the optimum thickness of the SiO 2 formed on the Si surface during the UV oxidation at 400 °C. A lower potential barrier to holes at the ZnO/SiO 2 interface facilitates Fowler-Nordheim tunneling of the photo-generated holes during the UV illumination, while a higher potential barrier to electrons efficiently blocks transport of the photo-generated electrons to the ZnO during the visible light illumination. The presence of oxide resulted in a slow photoresponse to the turn-on and off of the UV light. A detailed analysis is presented to understand how the photo-generated carriers contribute step by step to the photocurrent. In addition to the slow photoresponse associated with the SiO 2 interfacial layer, the decay of the photocurrent was found extremely slow after turn-off of the UV light. Such a slow decay of the photocurrent is referred to as a persistent photoconductivity, which is caused by metastable deep levels. It is hypothesized that Zn vacancies form such a deep level, and that the photo-generated electrons need to overcome a thermal-energy barrier for capture. The ZnO film by the UV oxidation at 400 °C was found to be rich in oxygen and

  7. Visible-blind ultraviolet photodiode fabricated by UV oxidation of metallic zinc on p-Si

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, Dongyuan; Uchida, Kazuo; Nozaki, Shinji, E-mail: nozaki@ee.uec.ac.jp [Graduate School of Informatics and Engineering, The University of Electro-Communications, Chofu-shi, Tokyo 182-8585 (Japan)

    2015-09-07

    A UV photodiode fabricated by the UV oxidation of a metallic zinc thin film on p-Si has manifested unique photoresponse characteristics. The electron concentration found by the Hall measurement was 3 × 10{sup 16 }cm{sup −3}, and such a low electron concentration resulted in a low visible photoluminescence. UV illumination enhances the oxidation at low temperatures and decreases the concentration of the oxygen vacancies. The I-V characteristic showed a good rectification with a four-order magnitude difference in the forward and reverse currents at 2 V, and its linear and frequency independent C{sup −2}–V characteristic confirmed an abrupt pn junction. The photoresponse showed a visible blindness with a responsivity ratio of UV and visible light as high as 100. Such a visible-blind photoresponse was attributed to the optimum thickness of the SiO{sub 2} formed on the Si surface during the UV oxidation at 400 °C. A lower potential barrier to holes at the ZnO/SiO{sub 2} interface facilitates Fowler-Nordheim tunneling of the photo-generated holes during the UV illumination, while a higher potential barrier to electrons efficiently blocks transport of the photo-generated electrons to the ZnO during the visible light illumination. The presence of oxide resulted in a slow photoresponse to the turn-on and off of the UV light. A detailed analysis is presented to understand how the photo-generated carriers contribute step by step to the photocurrent. In addition to the slow photoresponse associated with the SiO{sub 2} interfacial layer, the decay of the photocurrent was found extremely slow after turn-off of the UV light. Such a slow decay of the photocurrent is referred to as a persistent photoconductivity, which is caused by metastable deep levels. It is hypothesized that Zn vacancies form such a deep level, and that the photo-generated electrons need to overcome a thermal-energy barrier for capture. The ZnO film by the UV oxidation at 400 °C was found

  8. Prediction Surface Morphology of Nanostructure Fabricated by Nano-Oxidation Technology.

    Science.gov (United States)

    Huang, Jen-Ching; Chang, Ho; Kuo, Chin-Guo; Li, Jeen-Fong; You, Yong-Chin

    2015-12-04

    Atomic force microscopy (AFM) was used for visualization of a nano-oxidation technique performed on diamond-like carbon (DLC) thin film. Experiments of the nano-oxidation technique of the DLC thin film include those on nano-oxidation points and nano-oxidation lines. The feature sizes of the DLC thin film, including surface morphology, depth, and width, were explored after application of a nano-oxidation technique to the DLC thin film under different process parameters. A databank for process parameters and feature sizes of thin films was then established, and multiple regression analysis (MRA) and a back-propagation neural network (BPN) were used to carry out the algorithm. The algorithmic results are compared with the feature sizes acquired from experiments, thus obtaining a prediction model of the nano-oxidation technique of the DLC thin film. The comparative results show that the prediction accuracy of BPN is superior to that of MRA. When the BPN algorithm is used to predict nano-point machining, the mean absolute percentage errors (MAPE) of depth, left side, and right side are 8.02%, 9.68%, and 7.34%, respectively. When nano-line machining is being predicted, the MAPEs of depth, left side, and right side are 4.96%, 8.09%, and 6.77%, respectively. The obtained data can also be used to predict cross-sectional morphology in the DLC thin film treated with a nano-oxidation process.

  9. Fabrication and Antibacterial Effects of Polycarbonate/Leaf Extract Based Thin Films

    Directory of Open Access Journals (Sweden)

    R. Mahendran

    2016-01-01

    Full Text Available We have reported the preparation and antibacterial activities of leaf extract incorporated polycarbonate thin films to improve the antibacterial characteristics of host polycarbonates (PCs. Crude extracts of Azadirachta indica, Psidium guajava, Acalypha indica, Andrographis paniculata, and Ocimum sanctum were prepared by maceration using Dimethylformamide as solvent. The leaf extracts (LE were incorporated into the PC matrix by solution blending method, and the thin films were fabricated by Thermally Induced Phase Separation (TIPS technique. The antibacterial activities of the as-prepared films were evaluated against E. coli and S. aureus by disk diffusion method. The inhibitory effects of the PC/LE films are higher for S. aureus than the E. coli, but pristine PC film did not exhibit any remarkable antibacterial characteristics. Further, the model fruit (Prunus studies revealed that the PC/LE films retained the freshness of the fruits for more than 11 days. This study demonstrates that the PC/LE films have excellent antibacterial activities; thus, the films could be promising candidate for active antibacterial packaging applications.

  10. Fabrication of Glucose-Sensitive Layer-by-Layer Films for Potential Controlled Insulin Release Applications

    Directory of Open Access Journals (Sweden)

    Talusan Timothy Jemuel E.

    2015-01-01

    Full Text Available Self-regulated drug delivery systems (DDS are potential alternative to the conventional method of introducing insulin to the body due to their controlled drug release mechanism. In this study, Layer-by-Layer technique was utlized to manufacture drug loaded, pH responsive thin films. Insulin was alternated with pH-sensitive, [2-(dimethyl amino ethyl aminoacrylate] (PDMAEMA and topped of with polymer/glucose oxidase (GOD layers. Similarly, films using a different polymer, namely Poly(Acrylic Acid (PAA were also fabricated. Exposure of the films to glucose solutions resulted to the production of gluconic acid causing a polymer conformation change due to protonation, thus releasing the embedded insulin. The insulin release was monitored by subjecting the dipping glucose solutions to Bradford Assay. Films exhibited a reversal in drug release profile in the presence of glucose as compared to without glucose. PAA films were also found out to release more insulin compared to that of the PDMAEMA films.The difference in the profile of the two films were due to different polymer-GOD interactions, since both films exhibited almost identical profiles when embedded with Poly(sodium 4-styrenesulfonate (PSS instead of GOD.

  11. Fabrication of Antireflection Nanodiamond Particle Film by the Spin Coating Deposition Technique

    Directory of Open Access Journals (Sweden)

    Chii-Ruey Lin

    2014-01-01

    Full Text Available Diamond-based antireflective (AR coatings were fabricated using a spin coating of diamond suspension at room temperature as nucleation enhancement procedure and microwave plasma enhanced chemical vapour deposition. Various working pressures were used to investigate their effect on the optical characterization of the as-deposited diamond films. Scanning electron microscopy (SEM and atomic forced microscopy (AFM were employed to analyze the surface properties of the diamond films. Raman spectra and transmission electron microscopy (TEM also were used for analysis of the microstructure of the films. The results showed that working pressure had a significant effect on thickness, surface roughness, and wettability of the as-deposited diamond films. Deposited under 35 Torr or working pressure, the film possessed a low surface roughness of 13.8 nm and fine diamond grain sizes of 35 nm. Reflectance measurements of the films also were carried out using UV-Vis spectrometer and revealed a low reflectance value of the diamond films. The achievement demonstrated feasibility of the proposed spin-coating procedure for large scale production and thus opens up a prospect application of diamond film as an AR coating in industrial optoelectronic device.

  12. Oxidation and sensing of ascorbic acid and dopamine on self-assembled gold nanoparticles incorporated within polyaniline film

    Energy Technology Data Exchange (ETDEWEB)

    Chu, Wenya [College of Chemistry, Chemical Engineering and Materials Science, and Key Lab of Health Chemistry and Molecular Diagnosis of Suzhou, Soochow University, Suzhou 215123 (China); Zhou, Qun, E-mail: zhq@suda.edu.cn [College of Chemistry, Chemical Engineering and Materials Science, and Key Lab of Health Chemistry and Molecular Diagnosis of Suzhou, Soochow University, Suzhou 215123 (China); Li, Shuangshuang [College of Chemistry, Chemical Engineering and Materials Science, and Key Lab of Health Chemistry and Molecular Diagnosis of Suzhou, Soochow University, Suzhou 215123 (China); College of Physics, Optoelectronics and Energy, Soochow University, Suzhou 215006 (China); Zhao, Wei; Li, Na [College of Chemistry, Chemical Engineering and Materials Science, and Key Lab of Health Chemistry and Molecular Diagnosis of Suzhou, Soochow University, Suzhou 215123 (China); Zheng, Junwei, E-mail: jwzheng@suda.edu.cn [College of Chemistry, Chemical Engineering and Materials Science, and Key Lab of Health Chemistry and Molecular Diagnosis of Suzhou, Soochow University, Suzhou 215123 (China); College of Physics, Optoelectronics and Energy, Soochow University, Suzhou 215006 (China)

    2015-10-30

    Highlights: • Gold nanoparticles assembled on electrodes are incorporated into polyaniline film. • Composite film electrodes exhibit synergistic effect on electrocatalytic oxidation. • Ascorbic acid and dopamine can be detected simultaneously on composite electrodes. - Abstract: Electrochemical biosensors based on conducting polymers incorporated with metallic nanoparticles can greatly enhance sensitivity and selectivity. Herein, we report a facile fabrication approach for polyaniline (PAN) incorporated with a gold nanoparticle (AuNP) composite electrode by electrodeposition of PAN on a self-assembled AuNP layer on the surface of an indium tin oxide electrode. The resulting AuNP/PAN composite electrode exhibits a remarkable synergistic effect on the electrocatalytic oxidation of ascorbic acid (AA) and dopamine (DA). It is demonstrated that the oxidation reaction of AA mainly occurs at AuNPs inside the PAN film as the ascorbate anions are doped into the polymer during the oxidation of the PAN film. Conversely, the oxidation of positively charged DA may only take place at the PAN/solution interface. The different mechanisms of the electrode reactions result in the oxidation of AA and DA occurring at different potentials. As a result, the AuNP/PAN composite electrode can be employed to simultaneously detect AA and DA with a good linear range, high sensitivity, and low detection limit.

  13. Oxidation and sensing of ascorbic acid and dopamine on self-assembled gold nanoparticles incorporated within polyaniline film

    International Nuclear Information System (INIS)

    Chu, Wenya; Zhou, Qun; Li, Shuangshuang; Zhao, Wei; Li, Na; Zheng, Junwei

    2015-01-01

    Highlights: • Gold nanoparticles assembled on electrodes are incorporated into polyaniline film. • Composite film electrodes exhibit synergistic effect on electrocatalytic oxidation. • Ascorbic acid and dopamine can be detected simultaneously on composite electrodes. - Abstract: Electrochemical biosensors based on conducting polymers incorporated with metallic nanoparticles can greatly enhance sensitivity and selectivity. Herein, we report a facile fabrication approach for polyaniline (PAN) incorporated with a gold nanoparticle (AuNP) composite electrode by electrodeposition of PAN on a self-assembled AuNP layer on the surface of an indium tin oxide electrode. The resulting AuNP/PAN composite electrode exhibits a remarkable synergistic effect on the electrocatalytic oxidation of ascorbic acid (AA) and dopamine (DA). It is demonstrated that the oxidation reaction of AA mainly occurs at AuNPs inside the PAN film as the ascorbate anions are doped into the polymer during the oxidation of the PAN film. Conversely, the oxidation of positively charged DA may only take place at the PAN/solution interface. The different mechanisms of the electrode reactions result in the oxidation of AA and DA occurring at different potentials. As a result, the AuNP/PAN composite electrode can be employed to simultaneously detect AA and DA with a good linear range, high sensitivity, and low detection limit.

  14. Large-area self-assembled reduced graphene oxide/electrochemically exfoliated graphene hybrid films for transparent electrothermal heaters

    Science.gov (United States)

    Sun, Hongyan; Chen, Ding; Ye, Chen; Li, Xinming; Dai, Dan; Yuan, Qilong; Chee, Kuan W. A.; Zhao, Pei; Jiang, Nan; Lin, Cheng-Te

    2018-03-01

    Graphene shows great promise as a high-efficiency electrothermal film for flexible transparent defoggers/defrosters. However, it remains a great challenge to achieve a good balance between the production cost and the properties of graphene films. Here, we proposed a cost-effective self-assembly method to fabricate high-performance, large-area graphene oxide/electrochemically exfoliated graphene hybrid films for heater applications. The self-assembled graphene hybrid films with the area of 20 × 20 cm2 could be transferred onto arbitrary substrates with nonplanar surfaces and simply patterned with the hard mask. After reduction by hydrogen iodide vapor followed by 800 °C thermal treatment, the hybrid films with the transmittance of 76.2% exhibit good heating characteristics and defogging performance, which reach a saturation temperature of up to 127.5 °C when 40 V was applied for 60 s.

  15. Magneto-transport properties of oriented Mn{sub 2}CoAl films sputtered on thermally oxidized Si substrates

    Energy Technology Data Exchange (ETDEWEB)

    Xu, G. Z.; Du, Y.; Zhang, X. M.; Liu, E. K.; Wang, W. H., E-mail: wenhong.wang@iphy.ac.cn; Wu, G. H. [State Key Laboratory for Magnetism, Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190 (China); Zhang, H. G. [College of Materials Science and Engineering, Beijing University of Technology, Beijing 100124 (China)

    2014-06-16

    Spin gapless semiconductors are interesting family of materials by embracing both magnetism and semiconducting due to their unique band structure. Its potential application in future spintronics requires realization in thin film form. In this Letter, we report fabrication and transport properties of spin gapless Mn{sub 2}CoAl films prepared on thermally oxidized Si substrates by magnetron sputtering deposition. The films deposited at 673 K are well oriented to (001) direction and display a uniform-crystalline surface. Magnetotransport measurements on the oriented films reveal a semiconducting-like resistivity, small anomalous Hall conductivity, and linear magnetoresistance representative of the transport signatures of spin gapless semiconductors. The magnetic properties of the films have also been investigated and compared to that of bulk Mn{sub 2}CoAl, showing small discrepancy induced by the composition deviation.

  16. In situ fabrication of blue ceramic coatings on wrought Al Alloy 2024 by plasma electrolytic oxidation

    Energy Technology Data Exchange (ETDEWEB)

    Wang Zhijiang; Nie Xueyuan; Hu, Henry; Hussein, Riyad O. [Department of Mechanical, Automotive and Materials Engineering, University of Windsor, Windsor, Ontario N9B 3P4 (Canada)

    2012-03-15

    In situ formation of ceramic coatings on 2024 Al alloy with a blue color was successfully achieved using a plasma electrolytic oxidation process working at atmospheric pressure. This novel blue ceramic coating overcomes the shortcomings of surface treatments resulting from conventional dyeing processes by depositing organic dyes into the porous structure of anodic film, which has poor resistance to abrasion and rapid fading when exposed to sunlight. X-ray diffraction, scanning electron microscopy, and energy dispersive spectroscopy were employed to characterize the microstructure of the blue ceramic coating. The fabricated ceramic coating was composed of CoAl{sub 2}O{sub 4}, {alpha}-Al{sub 2}O{sub 3}, and {gamma}-Al{sub 2}O{sub 3.} By controlling the working parameters, the distribution of the CoAl{sub 2}O{sub 4} phase on the surface can be adjusted, and plays a key role in the appearance of the coating. Electrochemical testing, thermal cycling method, and pin-on-disk sliding wear testing were employed to evaluate corrosion, thermal cycling, and wear resistance of the ceramic coatings. The results indicate that the blue ceramic coating has a similar polarization resistance to that of conventional anodic film and can significantly enhance the corrosion resistance of aluminum alloy. There are no destructive horizontal cracks observed within the blue ceramic coating when subjected to 120 times of thermal cycling, which heats the samples up to 573 K and followed by submersion in water at room temperature for 10 min. Compared with the aluminum substrate as well as a conventional anodic film coated aluminum sample, the wear resistance of the blue ceramic coating coated sample was significantly increased while the coefficient of friction was decreased from 0.34 to 0.14.

  17. In situ fabrication of blue ceramic coatings on wrought Al Alloy 2024 by plasma electrolytic oxidation

    International Nuclear Information System (INIS)

    Wang Zhijiang; Nie Xueyuan; Hu, Henry; Hussein, Riyad O.

    2012-01-01

    In situ formation of ceramic coatings on 2024 Al alloy with a blue color was successfully achieved using a plasma electrolytic oxidation process working at atmospheric pressure. This novel blue ceramic coating overcomes the shortcomings of surface treatments resulting from conventional dyeing processes by depositing organic dyes into the porous structure of anodic film, which has poor resistance to abrasion and rapid fading when exposed to sunlight. X-ray diffraction, scanning electron microscopy, and energy dispersive spectroscopy were employed to characterize the microstructure of the blue ceramic coating. The fabricated ceramic coating was composed of CoAl 2 O 4 , α-Al 2 O 3 , and γ-Al 2 O 3. By controlling the working parameters, the distribution of the CoAl 2 O 4 phase on the surface can be adjusted, and plays a key role in the appearance of the coating. Electrochemical testing, thermal cycling method, and pin-on-disk sliding wear testing were employed to evaluate corrosion, thermal cycling, and wear resistance of the ceramic coatings. The results indicate that the blue ceramic coating has a similar polarization resistance to that of conventional anodic film and can significantly enhance the corrosion resistance of aluminum alloy. There are no destructive horizontal cracks observed within the blue ceramic coating when subjected to 120 times of thermal cycling, which heats the samples up to 573 K and followed by submersion in water at room temperature for 10 min. Compared with the aluminum substrate as well as a conventional anodic film coated aluminum sample, the wear resistance of the blue ceramic coating coated sample was significantly increased while the coefficient of friction was decreased from 0.34 to 0.14.

  18. Fabrication of a Micro Cooler using Thermoelectric Thin Film

    International Nuclear Information System (INIS)

    Han, S. W.; Choi, H. J.; Kim, D. H.; Kim, W. J.; Kim, B. I.; Kim, K. M.

    2007-01-01

    In general a ThermoElectric Cooler (TEC) consists of a series of P type and N type thermoelectric materials sandwiched between two wafers. When a DC current passes through these materials, three different effects take place; Peltier effect, Joule heating effect and heat transfer by conduction due to temperature difference between hot and cold plates. In this study we have developed a micro TEC using Bi2Te3 (N type) and Bi0.5Sb1.5Te3 (P type) thin films. In order to improve that performance of a micro TEC, we made 10 um height TE legs using special PR only for lift-off. We measured COP (coefficient of performance) and temperature difference between hot and cold connectors with current

  19. Enhanced photoluminescence in transparent thin films of polyaniline–zinc oxide nanocomposite prepared from oleic acid modified zinc oxide nanoparticles

    Energy Technology Data Exchange (ETDEWEB)

    Sajimol Augustine, M., E-mail: sajimollazar@gmail.com [Department of Physics, St. Teresa' s College, Kochi-11, Kerala (India); Jeeju, P.P.; Varma, S.J.; Francis Xavier, P.A. [Division for Research in Advanced Materials, Department of Physics, Cochin University of Science and Technology, Kochi-22, Kerala (India); Jayalekshmi, S., E-mail: lakshminathcusat@gmail.com [Division for Research in Advanced Materials, Department of Physics, Cochin University of Science and Technology, Kochi-22, Kerala (India)

    2014-07-01

    Oleic acid capped zinc oxide (ZnO) nanoparticles have been synthesized by a wet chemical route. The chemical oxidative method is employed to synthesize polyaniline (PANI) and PANI/ZnO nanocomposites doped with four different dopants such as orthophosphoric acid (H{sub 3}PO{sub 4}), hydrochloric acid (HCl), naphthalene-2-sulphonic acid and camphor sulphonic acid (CSA). The samples have been structurally characterized by X-ray diffraction (XRD), field emission scanning electron microscopy and Fourier transform infrared (FT-IR) spectroscopic techniques. A comparison of the photoluminescence (PL) emission intensity of PANI and PANI/ZnO nanocomposites is attempted. The enhanced PL intensity in PANI/ZnO nanocomposites is caused by the presence of nanostructured and highly fluorescent ZnO in the composites. It has been observed that, among the composites, the H{sub 3}PO{sub 4} doped PANI/ZnO nanocomposite is found to exhibit the highest PL intensity because of the higher extent of (pi) conjugation and the more orderly arrangement of the benzenoid and quinonoid units. In the present work, transparent thin films of PANI and PANI/ZnO nanocomposite for which PL intensity is found to be maximum, have been prepared after re-doping with CSA by the spin-coating technique. The XRD pattern of the PANI/ZnO film shows exceptionally good crystallanity compared to that of pure PANI, which suggests that the addition of ZnO nanocrystals helps in enhancing the crystallanity of the PANI/ZnO nanocomposite. There is a significant increase in the PL emission intensity of the PANI/ZnO nanocomposite film making it suitable for the fabrication of optoelectronic devices. - Highlights: • Oleic acid capped zinc oxide nanoparticles are synthesized by wet chemical method. • Polyaniline/zinc oxide nanocomposites are prepared by in-situ polymerization. • Polyaniline and polyaniline/zinc oxide thin films are deposited using spin-coating. • Enhanced photoluminescence is observed in polyaniline

  20. Remote plasma-enhanced metalorganic chemical vapor deposition of aluminum oxide thin films

    NARCIS (Netherlands)

    Volintiru, I.; Creatore, M.; Hemmen, van J.L.; Sanden, van de M.C.M.

    2008-01-01

    Aluminum oxide films were deposited using remote plasma-enhanced metalorganic chemical vapor deposition from oxygen/trimethylaluminum mixtures. Initial studies by in situ spectroscopic ellipsometry demonstrated that the aluminum oxide films deposited at temperatures

  1. Structural and optical properties of electrodeposited molybdenum oxide thin films

    International Nuclear Information System (INIS)

    Patil, R.S.; Uplane, M.D.; Patil, P.S.

    2006-01-01

    Electrosynthesis of Mo(IV) oxide thin films on F-doped SnO 2 conducting glass (10-20/Ω/□) substrates were carried from aqueous alkaline solution of ammonium molybdate at room temperature. The physical characterization of as-deposited films carried by thermogravimetric/differential thermogravimetric analysis (TGA/DTA), infrared spectroscopy and X-ray diffraction (XRD) showed the formation of hydrous and amorphous MoO 2 . Scanning electron microscopy (SEM) revealed a smooth but cracked surface with multi-layered growth. Annealing of these films in dry argon at 450 deg. C for 1 h resulted into polycrystalline MoO 2 with crystallites aligned perpendicular to the substrate. Optical absorption study indicated a direct band gap of 2.83 eV. The band gap variation consistent with Moss rule and band gap narrowing upon crystallization was observed. Structure tailoring of as-deposited thin films by thermal oxidation in ambient air to obtain electrochromic Mo(VI) oxide thin films was exploited for the first time by this novel route. The results of this study will be reported elsewhere

  2. Fabrication and performance of pressure-sensing device consisting of electret film and organic semiconductor

    Science.gov (United States)

    Kodzasa, Takehito; Nobeshima, Daiki; Kuribara, Kazunori; Uemura, Sei; Yoshida, Manabu

    2017-04-01

    We propose a new concept of a pressure-sensitive device that consists of an organic electret film and an organic semiconductor. This device exhibits high sensitivity and selectivity against various types of pressure. The sensing mechanism of this device originates from a modulation of the electric conductivity of the organic semiconductor film induced by the interaction between the semiconductor film and the charged electret film placed face to face. It is expected that a complicated sensor array will be fabricated by using a roll-to-roll manufacturing system, because this device can be prepared by an all-printing and simple lamination process without high-level positional adjustment for printing processes. This also shows that this device with a simple structure is suitable for application to a highly flexible device array sheet for an Internet of Things (IoT) or wearable sensing system.

  3. Fabrication of CdS films with superhydrophobicity by the microwave assisted chemical bath deposition.

    Science.gov (United States)

    Liu, Y; Tan, T; Wang, B; Zhai, R; Song, X; Li, E; Wang, H; Yan, H

    2008-04-15

    A simple method of microwave assisted chemical bath deposition (MA-CBD) was adopted to fabricate cadmium sulfide (CdS) thin films. The superhydrophobic surface with a water contact angle (CA) of 151 degrees was obtained. Via a scanning electron microscopy (SEM) observation, the film was proved having a porous micro/nano-binary structure which can change the property of the surface and highly enhance the hydrophobicity of the film. A possible mechanism was suggested to describe the growth of the porous structure, in which the microwave heating takes an important role in the formation of two distinct characteristic dimensions of CdS precipitates, the growth of CdS sheets in micro-scale and sphere particles in nano-scale. The superhydrophobic films may provide novel platforms for photovoltaic, sensor, microfluidic and other device applications.

  4. Ni-Cr thin film resistor fabrication for GaAs monolithic microwave integrated circuits

    International Nuclear Information System (INIS)

    Vinayak, Seema; Vyas, H.P.; Muraleedharan, K.; Vankar, V.D.

    2006-01-01

    Different Ni-Cr alloys were sputter-deposited on silicon nitride-coated GaAs substrates and covered with a spin-coated polyimide layer to develop thin film metal resistors for GaAs monolithic microwave integrated circuits (MMICs). The contact to the resistors was made through vias in the polyimide layer by sputter-deposited Ti/Au interconnect metal. The variation of contact resistance, sheet resistance (R S ) and temperature coefficient of resistance (TCR) of the Ni-Cr resistors with fabrication process parameters such as polyimide curing thermal cycles and surface treatment given to the wafer prior to interconnect metal deposition has been studied. The Ni-Cr thin film resistors exhibited lower R S and higher TCR compared to the as-deposited Ni-Cr film that was not subjected to thermal cycles involved in the MMIC fabrication process. The change in resistivity and TCR values of Ni-Cr films during the MMIC fabrication process was found to be dependent on the Ni-Cr alloy composition

  5. A Confined Fabrication of Perovskite Quantum Dots in Oriented MOF Thin Film.

    Science.gov (United States)

    Chen, Zheng; Gu, Zhi-Gang; Fu, Wen-Qiang; Wang, Fei; Zhang, Jian

    2016-10-26

    Organic-inorganic hybrid lead organohalide perovskites are inexpensive materials for high-efficiency photovoltaic solar cells, optical properties, and superior electrical conductivity. However, the fabrication of their quantum dots (QDs) with uniform ultrasmall particles is still a challenge. Here we use oriented microporous metal-organic framework (MOF) thin film prepared by liquid phase epitaxy approach as a template for CH 3 NH 3 PbI 2 X (X = Cl, Br, and I) perovskite QDs fabrication. By introducing the PbI 2 and CH 3 NH 3 X (MAX) precursors into MOF HKUST-1 (Cu 3 (BTC) 2 , BTC = 1,3,5-benzene tricarboxylate) thin film in a stepwise approach, the resulting perovskite MAPbI 2 X (X = Cl, Br, and I) QDs with uniform diameters of 1.5-2 nm match the pore size of HKUST-1. Furthermore, the photoluminescent properties and stability in the moist air of the perovskite QDs loaded HKUST-1 thin film were studied. This confined fabrication strategy demonstrates that the perovskite QDs loaded MOF thin film will be insensitive to air exposure and offers a novel means of confining the uniform size of the similar perovskite QDs according to the oriented porous MOF materials.

  6. High-performance micro-solid oxide fuel cells fabricated on nanoporous anodic aluminum oxide templates

    Energy Technology Data Exchange (ETDEWEB)

    Kwon, Chang-Woo; Kim, Hyun-Mi; Kim, Ki-Bum [WCUHybrid Materials Program, Department of Materials Science and Engineering, Seoul National University, 599 Gwanak-ro, Gwanak-gu, Seoul, 151-742 (Korea, Republic of); Son, Ji-Won; Lee, Jong-Ho; Lee, Hae-Weon [High Temperature Energy Materials Center, Korea Institute of Science and Technology, 39-1, Hawolgok-dong, Seongbuk-gu, Seoul, 136-791 (Korea, Republic of)

    2011-03-22

    Micro-solid oxide fuel cells ({mu}-SOFCs) are fabricated on nanoporous anodic aluminum oxide (AAO) templates with a cell structure composed of a 600-nm-thick AAO free-standing membrane embedded on a Si substrate, sputter-deposited Pt electrodes (cathode and anode) and an yttria-stabilized zirconia (YSZ) electrolyte deposited by pulsed laser deposition (PLD). Initially, the open circuit voltages (OCVs) of the AAO-supported {mu}-SOFCs are in the range of 0.05 V to 0.78 V, which is much lower than the ideal value, depending on the average pore size of the AAO template and the thickness of the YSZ electrolyte. Transmission electron microscopy (TEM) analysis reveals the formation of pinholes in the electrolyte layer that originate from the porous nature of the underlying AAO membrane. In order to clog these pinholes, a 20-nm thick Al{sub 2}O{sub 3} layer is deposited by atomic layer deposition (ALD) on top of the 300-nm thick YSZ layer and another 600-nm thick YSZ layer is deposited after removing the top intermittent Al{sub 2}O{sub 3} layer. Fuel cell devices fabricated in this way manifest OCVs of 1.02 V, and a maximum power density of 350 mW cm{sup -2} at 500 C. (Copyright copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  7. Electro-mechanical coupling of semiconductor film grown on stainless steel by oxidation

    Science.gov (United States)

    Lin, M. C.; Wang, G.; Guo, L. Q.; Qiao, L. J.; Volinsky, Alex A.

    2013-09-01

    Electro-mechanical coupling phenomenon in oxidation film on stainless steel has been discovered by using current-sensing atomic force microscopy, along with the I-V curves measurements. The oxidation films exhibit either ohmic, n-type, or p-type semiconductor properties, according to the obtained I-V curves. This technique allows characterizing oxidation films with high spatial resolution. Semiconductor properties of oxidation films must be considered as additional stress corrosion cracking mechanisms.

  8. Optical characterisation of thin film cadmium oxide prepared by a ...

    African Journals Online (AJOL)

    The optical transmission spectra of transparent conducting cadmium oxide (CdO) thin films deposited by a modified reactive evaporation process onto glass substrates have been measured. The interference fringes were used to calculate the refractive index, thickness variation, average thickness and absorption coefficient ...

  9. solution growth and characterization of copper oxide thin films ...

    African Journals Online (AJOL)

    Thin films of copper oxide (CuO) were grown on glass slides by using the solution growth technique. Copper cloride (CuCl ) and potassium telluride (K T O ) were used. Buffer 2 2e 3 solution was used as complexing agent. The solid state properties and optical properties were obtained from characterization done using PYE ...

  10. Nanoscale reduction of graphene oxide thin films and its characterization

    KAUST Repository

    Lorenzoni, M.; Giugni, Andrea; Di Fabrizio, Enzo M.; Pé rez-Murano, Francesc; Mescola, A.; Torre, Bruno

    2015-01-01

    In this paper, we report on a method to reduce thin films of graphene oxide (GO) to a spatial resolution better than 100 nm over several tens of micrometers by means of an electrochemical scanning probe based lithography. In situ tip

  11. Transparent conductive oxides for thin-film silicon solar cells

    NARCIS (Netherlands)

    Löffler, J.

    2005-01-01

    This thesis describes research on thin-film silicon solar cells with focus on the transparent conductive oxide (TCO) for such devices. In addition to the formation of a transparent and electrically conductive front electrode for the solar cell allowing photocurrent collection with low ohmic losses,