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Sample records for oxide electrically erasable

  1. A new repeatable, optical writing and electrical erasing device based on photochromism and electrochromism of viologen

    International Nuclear Information System (INIS)

    Gao, Li-ping; Wei, Jian; Wang, Yue-chuan; Ding, Guo-jing; Yang, Yu-lin

    2012-01-01

    New optical writing and electrical erasing devices have been successfully fabricated that exploit the photochromism and electrochromism of viologen. In a preliminary study, both the structures of viologen and device were investigated in detail by UV–vis spectra in order to confirm their effects on the optical writing and electrical erasing performances of corresponding devices. For sandwiched, single and complementary devices based on benzyl viologen (BV 2+ ), only optical writing can be performed, not electrical erasing operations, which indicated these devices cannot realize optical information rewriting. For single and complementary devices based on styrene-functional viologen (V BV 2+ ) and acrylic-functional viologen (ACV 2+ ), optical writing and electrical erasing operations can be reversibly performed and optical information rewriting realized. It is clear that single devices based on V BV 2+ and ACV 2+ possess better performance accompanied with contrast without significant degradation and bleaching times and without significant deterioration over 10 repeated writing/erasing cycles. Furthermore, we put forward possible mechanisms for sandwiched, single and complementary devices based on V BV 2+ and ACV 2+ for the optical writing and electrical erasing operations. This study provides a new strategy to design optical writing and electrical erasing devices to realize optical information rewriting. (paper)

  2. Perovskite oxides: an atomic force pencil and eraser

    NARCIS (Netherlands)

    Rijnders, Augustinus J.H.M.; Blank, David H.A.

    A method of writing and erasing conducting nanostructures at the interface between the wide-bandgap insulators LaAlO3 and SrTiO3 is presented. New developments for ltrahigh-density information storage look feasible

  3. Modeling of SONOS Memory Cell Erase Cycle

    Science.gov (United States)

    Phillips, Thomas A.; MacLeod, Todd C.; Ho, Fat H.

    2011-01-01

    Utilization of Silicon-Oxide-Nitride-Oxide-Silicon (SONOS) nonvolatile semiconductor memories as a flash memory has many advantages. These electrically erasable programmable read-only memories (EEPROMs) utilize low programming voltages, have a high erase/write cycle lifetime, are radiation hardened, and are compatible with high-density scaled CMOS for low power, portable electronics. In this paper, the SONOS memory cell erase cycle was investigated using a nonquasi-static (NQS) MOSFET model. Comparisons were made between the model predictions and experimental data.

  4. Electrically programmable-erasable In-Ga-Zn-O thin-film transistor memory with atomic-layer-deposited Al2O3/Pt nanocrystals/Al2O3 gate stack

    Directory of Open Access Journals (Sweden)

    Shi-Bing Qian

    2015-12-01

    Full Text Available Amorphous indium-gallium-zinc oxide (a-IGZO thin-film transistor (TFT memory is very promising for transparent and flexible system-on-panel displays; however, electrical erasability has always been a severe challenge for this memory. In this article, we demonstrated successfully an electrically programmable-erasable memory with atomic-layer-deposited Al2O3/Pt nanocrystals/Al2O3 gate stack under a maximal processing temperature of 300 oC. As the programming voltage was enhanced from 14 to 19 V for a constant pulse of 0.2 ms, the threshold voltage shift increased significantly from 0.89 to 4.67 V. When the programmed device was subjected to an appropriate pulse under negative gate bias, it could return to the original state with a superior erasing efficiency. The above phenomena could be attributed to Fowler-Nordheim tunnelling of electrons from the IGZO channel to the Pt nanocrystals during programming, and inverse tunnelling of the trapped electrons during erasing. In terms of 0.2-ms programming at 16 V and 350-ms erasing at −17 V, a large memory window of 3.03 V was achieved successfully. Furthermore, the memory exhibited stable repeated programming/erasing (P/E characteristics and good data retention, i.e., for 2-ms programming at 14 V and 250-ms erasing at −14 V, a memory window of 2.08 V was still maintained after 103 P/E cycles, and a memory window of 1.1 V was retained after 105 s retention time.

  5. Electrically programmable-erasable In-Ga-Zn-O thin-film transistor memory with atomic-layer-deposited Al{sub 2}O{sub 3}/Pt nanocrystals/Al{sub 2}O{sub 3} gate stack

    Energy Technology Data Exchange (ETDEWEB)

    Qian, Shi-Bing; Zhang, Wen-Peng; Liu, Wen-Jun; Ding, Shi-Jin, E-mail: sjding@fudan.edu.cn [State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai 200433 (China)

    2015-12-15

    Amorphous indium-gallium-zinc oxide (a-IGZO) thin-film transistor (TFT) memory is very promising for transparent and flexible system-on-panel displays; however, electrical erasability has always been a severe challenge for this memory. In this article, we demonstrated successfully an electrically programmable-erasable memory with atomic-layer-deposited Al{sub 2}O{sub 3}/Pt nanocrystals/Al{sub 2}O{sub 3} gate stack under a maximal processing temperature of 300 {sup o}C. As the programming voltage was enhanced from 14 to 19 V for a constant pulse of 0.2 ms, the threshold voltage shift increased significantly from 0.89 to 4.67 V. When the programmed device was subjected to an appropriate pulse under negative gate bias, it could return to the original state with a superior erasing efficiency. The above phenomena could be attributed to Fowler-Nordheim tunnelling of electrons from the IGZO channel to the Pt nanocrystals during programming, and inverse tunnelling of the trapped electrons during erasing. In terms of 0.2-ms programming at 16 V and 350-ms erasing at −17 V, a large memory window of 3.03 V was achieved successfully. Furthermore, the memory exhibited stable repeated programming/erasing (P/E) characteristics and good data retention, i.e., for 2-ms programming at 14 V and 250-ms erasing at −14 V, a memory window of 2.08 V was still maintained after 10{sup 3} P/E cycles, and a memory window of 1.1 V was retained after 10{sup 5} s retention time.

  6. Reversible switching of wetting properties and erasable patterning of polymer surfaces using plasma oxidation and thermal treatment

    Science.gov (United States)

    Rashid, Zeeshan; Atay, Ipek; Soydan, Seren; Yagci, M. Baris; Jonáš, Alexandr; Yilgor, Emel; Kiraz, Alper; Yilgor, Iskender

    2018-05-01

    Polymer surfaces reversibly switchable from superhydrophobic to superhydrophilic by exposure to oxygen plasma and subsequent thermal treatment are demonstrated. Two inherently different polymers, hydrophobic segmented polydimethylsiloxane-urea copolymer (TPSC) and hydrophilic poly(methyl methacrylate) (PMMA) are modified with fumed silica nanoparticles to prepare superhydrophobic surfaces with roughness on nanometer to micrometer scale. Smooth TPSC and PMMA surfaces are also used as control samples. Regardless of their chemical structure and surface topography, all surfaces display completely reversible wetting behavior changing from hydrophobic to hydrophilic and back for many cycles upon plasma oxidation followed by thermal annealing. Influence of plasma power, plasma exposure time, annealing temperature and annealing time on the wetting behavior of polymeric surfaces are investigated. Surface compositions, textures and topographies are characterized by X-ray photoelectron spectroscopy (XPS), scanning electron microscopy (SEM) and white light interferometry (WLI), before and after oxidation and thermal annealing. Wetting properties of the surfaces are determined by measuring their static, advancing and receding water contact angle. We conclude that the chemical structure and surface topography of the polymers play a relatively minor role in reversible wetting behavior, where the essential factors are surface oxidation and migration of polymer molecules to the surface upon thermal annealing. Reconfigurable water channels on polymer surfaces are produced by plasma treatment using a mask and thermal annealing cycles. Such patterned reconfigurable hydrophilic regions can find use in surface microfluidics and optofluidics applications.

  7. The quantum self-eraser

    International Nuclear Information System (INIS)

    Martinez-Linares, Jesus; Vargas-Medina, Julio

    2004-01-01

    A scheme for an atomic beam quantum self-eraser is presented. The proposal is based on time reversal invariance on a quantum optical Ramsey fringe experiment, where a realization of complementarity for atomic coherence can be achieved. It consists of two high-finesse resonators that are pumped and probed by the same atom. This property relates quantum erasing to time reversal symmetry, allowing for a full quantum erasing of the which-way information stored in the cavity fields. The outlined scheme also prepares and observes a non-local state in the fields of the resonators: a coherent superposition between correlated states of macroscopically separated quantum systems. The proposed scheme emphasizes the role of entanglement swapping in delayed-choice experiments

  8. Direct comparison of the electrical properties in metal/oxide/nitride/oxide/silicon and metal/aluminum oxide/nitride/oxide/silicon capacitors with equivalent oxide thicknesses

    Energy Technology Data Exchange (ETDEWEB)

    An, Ho-Myoung; Seo, Yu Jeong; Kim, Hee Dong; Kim, Kyoung Chan; Kim, Jong-Guk [School of Electrical Engineering, Korea University, Seoul 136-713 (Korea, Republic of); Cho, Won-Ju; Koh, Jung-Hyuk [Department of Electronic Materials Engineering, Kwangwoon University, Seoul 139-701 (Korea, Republic of); Sung, Yun Mo [Department of Materials and Science Engineering, Korea University, Seoul 136-713 (Korea, Republic of); Kim, Tae Geun, E-mail: tgkim1@korea.ac.k [School of Electrical Engineering, Korea University, Seoul 136-713 (Korea, Republic of)

    2009-07-31

    We examine the electrical properties of metal/oxide/nitride/oxide/silicon (MONOS) capacitors with two different blocking oxides, SiO{sub 2} and Al{sub 2}O{sub 3}, under the influence of the same electric field. The thickness of the Al{sub 2}O{sub 3} layer is set to 150 A, which is electrically equivalent to a thickness of the SiO{sub 2} layer of 65 A, in the MONOS structure for this purpose. The capacitor with the Al{sub 2}O{sub 3} blocking layer shows a larger capacitance-voltage memory window of 8.6 V, lower program voltage of 7 V, faster program/erase speeds of 10 ms/1 {mu}s, lower leakage current of 100 pA and longer data retention than the one with the SiO{sub 2} blocking layer does. These improvements are attributed to the suppression of the carrier transport to the gate electrode afforded by the use of an Al{sub 2}O{sub 3} blocking layer physically thicker than the SiO{sub 2} one, as well as the effective charge-trapping by Al{sub 2}O{sub 3} at the deep energy levels in the nitride layer.

  9. Electrical impedance studies of uranium oxide

    International Nuclear Information System (INIS)

    Hampton, R.N.

    1986-11-01

    The thesis presents data on the electrical properties of uranium oxide at temperatures from 1700K to 4.2K, and pressures between 25 K bar and 70 K bar. The impedance data were analysed using the technique of complex plane representation to establish the conductivity and dielectric constant of uranium dioxide. The thermophysical data were compared with previously reported experimental and theoretical work on uranium dioxide and other fluorite structured oxides. (U.K.)

  10. Quantum eraser for three-slit interference

    Indian Academy of Sciences (India)

    Naveed Ahmad Shah

    2017-11-09

    Nov 9, 2017 ... Abstract. It is well known that in a two-slit interference experiment, if the information, on which of the two paths the particle followed, is stored in a quantum path detector, the interference is destroyed. However, in a set-up where this path information is 'erased', the interference can reappear. Such a set-up is ...

  11. Quality Assessment of the Physico-Mechanical and Elemental Composition of Three Pencil Grades and Eraser Types Produced in Nigeria

    Directory of Open Access Journals (Sweden)

    K. I. Omoniyi

    2014-06-01

    Full Text Available The quality assessment of the physical (pH, electrical conductivity, density, writeability, eraseability, mechanical (compression test and break strength and elemental composition of the pencil grades HB, 2B and 3B and eraser types of brand names Ben 10, Tiky 20 and the commonest White eraser in Nigerian primary school (Gummes Co. China was carried out. The diameter of the graphite part increased in the order HB Cr > Cd. Though, the levels of the trace metals and essential elements detected in the school items are below the recommended limits, regulatory measures should be directed towards maintaining the standards of school items.

  12. A Method of Erasing Data Using Random Number Generators

    OpenAIRE

    井上,正人

    2012-01-01

    Erasing data is an indispensable step for disposal of computers or external storage media. Except physical destruction, erasing data means writing random information on entire disk drives or media. We propose a method which erases data safely using random number generators. These random number generators create true random numbers based on quantum processes.

  13. Memory characteristics of Au nanocrystals embedded in metal-oxide-semiconductor structure by using atomic-layer-deposited Al2O3 as control oxide

    International Nuclear Information System (INIS)

    Wang, C.-C.; Chiou, Y.-K.; Chang, C.-H.; Tseng, J.-Y.; Wu, L.-J.; Chen, C.-Y.; Wu, T.-B.

    2007-01-01

    The nonvolatile memory characteristics of metal-oxide-semiconductor (MOS) structures containing Au nanocrystals in the Al 2 O 3 /SiO 2 matrix were studied. In this work, we have demonstrated that the use of Al 2 O 3 as control oxide prepared by atomic-layer-deposition enhances the erase speed of the MOS capacitors. A giant capacitance-voltage hysteresis loop and a very short erase time which is lower than 1 ms can be obtained. Compared with the conventional floating-gate electrically erasable programmable read-only memories, the erase speed was promoted drastically. In addition, very low leakage current and large turn-around voltage resulting from electrons or holes stored in the Au nanocrystals were found in the current-voltage relation of the MOS capacitors

  14. Distribution of sizes of erased loops for loop-erased random walks

    OpenAIRE

    Dhar, Deepak; Dhar, Abhishek

    1997-01-01

    We study the distribution of sizes of erased loops for loop-erased random walks on regular and fractal lattices. We show that for arbitrary graphs the probability $P(l)$ of generating a loop of perimeter $l$ is expressible in terms of the probability $P_{st}(l)$ of forming a loop of perimeter $l$ when a bond is added to a random spanning tree on the same graph by the simple relation $P(l)=P_{st}(l)/l$. On $d$-dimensional hypercubical lattices, $P(l)$ varies as $l^{-\\sigma}$ for large $l$, whe...

  15. Electrical and optical properties of zinc oxide: thin films

    International Nuclear Information System (INIS)

    Zuhairusnizam Md Darus; Abdul Jalil Yeop Majlis; Anis Faridah Md Nor; Burhanuddin Kamaluddin

    1992-01-01

    Zinc oxide films have been prepared by high temperature oxidation of thermally evaporated zinc films on glass substrates. The resulting films are characterized using X-ray diffraction, optical absorption and electrical conductivity measurements. These zinc oxide films are very transparent and photoconductive

  16. Exploring Electric Polarization Mechanisms in Multiferroic Oxides

    Energy Technology Data Exchange (ETDEWEB)

    Tyson, Trevor A. [New Jersey Institute of Technology (NJIT), Newark, NJ (United States)

    2017-01-24

    Multiferroic oxides are a class of systems which exhibit coupling between the electrical polarization and the magnetization. These materials show promise to lead to devices in which ferromagnetic memory can be written with magnetic fields or magnetic bits can be written by an electric field. The work conducted in our research focuses on single phase materials. We studied the detailed coupling of the spin and lattice correlations in these systems. In the first phase of the proposal, we explored the complex spin spiral systems and low temperature behavior of hexagonal layered REMnO3 (RE= rare earth, Y and Sc) system following the detailed structural changes which occurred on crossing into the magnetic states. The techniques were applied to other layered materials such as superconductors and thermoelectric where the same layered motif exists. The second phase of the proposal focused on understanding the mechanisms involved in the onset high temperature ferroelectricity ion hexagonal REMnO3 and at low temperature in E-Type magnetic ordered perovskite REMnO3. We wsynthesized preovskite small A site multiferroics by high pressure and high temperature methods. Detailed measurement of the structural properties and dynamics were conducted over a range of length scales from atomic to mesoscopic scale using, x-ray absorption spectroscopy, x-ray diffuse scattering, x-ray and neutron pair distribution analysis and high resolution x-ray diffraction. Changes in vibration modes which occur with the onset of polarization were probed with temperature and pressure dependent infrared absorption spectroscopy. In addition the orthorhombic system (small radius RE ions) which is believed to exhibit electronically driven ferroelectricity and is also not understood was examined. The multiple length scale synchrotron based measurements may assist in developing more detailed models of these materials and possibly lead to device applications. The experimental

  17. Synthesis and electrical characterization of Graphene Oxide films

    International Nuclear Information System (INIS)

    Yasin, Muhammad; Tauqeer, T.; Zaidi, Syed M.H.; San, Sait E.; Mahmood, Asad; Köse, Muhammet E.; Canimkurbey, Betul; Okutan, Mustafa

    2015-01-01

    In this work, we have synthesized Graphene Oxide (GO) using modified Hummers method and investigated its electrical properties using parallel plate impedance spectroscopic technique. Graphene Oxide films were prepared using drop casting method on Indium Tin Oxide (ITO) coated glass substrate. Atomic force microscopy was used to characterize the films' microstructure and surface topography. Electrical characterization was carried out using LCR meter in frequency regime (100 Hz to 10 MHz) at different temperatures. AC conductivity σ ac of the films was observed to be varied with angular frequency, ω as ω S , with S < 1. The electrical properties of GO were found to be both frequency and temperature dependent. Analysis showed that GO film contains direct current (DC) and Correlated Barrier Hopping (CBH) conductivity mechanisms at low and high frequency ranges, respectively. Photon absorption and transmittance capability in the visible range and excellent electrical parameters of solution processed Graphene Oxide suggest its suitability for the realization of low cost flexible organic solar cells and organic Thin Film Transistors, respectively. - Highlights: • Synthesize and electrical characterization of Graphene Oxide (GO) Film was undertaken. • Temperature dependent impedance spectroscopy was used for electrical analysis. • AFM was used to characterize films' microstructure and surface topography. • Electrical parameters were found to vary with both temperature and frequency. • GO showed DC and CBH conductivity mechanisms at low and high frequency, respectively

  18. Potential of reversible solid oxide cells as electricity storage system

    OpenAIRE

    Di Giorgio, Paolo; Desideri, Umberto

    2016-01-01

    Electrical energy storage (EES) systems allow shifting the time of electric power generation from that of consumption, and they are expected to play a major role in future electric grids where the share of intermittent renewable energy systems (RES), and especially solar and wind power plants, is planned to increase. No commercially available technology complies with all the required specifications for an efficient and reliable EES system. Reversible solid oxide cells (ReSOC) working in both ...

  19. Structural and electrical characterization of zinc oxide doped with antimony

    Directory of Open Access Journals (Sweden)

    G. Juárez Díaz

    2014-08-01

    Full Text Available In this work we report the results of structural and electrical characterization realized on zinc oxide single crystal samples with (001 orientation, which were doped with antimony. Doping was carried out by antimony thermal diffusion at 1000 °C for periods of 1 and 2 hours under nitrogen environment from a solid source formed by antimony oxide. Electrical characterization by I-V curves and Hall effect shown an increase in acceptor concentration which demonstrates that doping is effective and create holes in zinc oxide samples.

  20. Write/erase time of nanoseconds in quantum dot based memory structures

    International Nuclear Information System (INIS)

    Nowozin, Tobias; Marent, Andreas; Geller, Martin; Bimberg, Dieter

    2008-01-01

    We have developed a novel charge-storage memory concept based on III-V semiconductor quantum dots (QDs) which has a number of fundamental advantages over conventional Si/SiO 2 floating gate memories (Flash): material-tunable and voltage-tunable barriers for improved intrinsic speed and/or storage time and high endurance. To investigate the potential of this new memory concept we have determined intrinsic write/erase times in memory structures based on InAs/GaAs and GaSb/GaAs QDs using capacitance-voltage spectroscopy. We measured a write time below 15 ns independent of the localization energy (i.e. the storage time) of the QDs. This write time is more than three orders of magnitude faster than in a Flash cell and already below the write time of a dynamic random access memory (DRAM). The erase time was determined to be 42 ns for InAs/GaAs QDs and 1.5 ms for GaSb/GaAs QDs for applied electric fields of 166 kV/cm and 206 kV/cm, respectively. From these results we derive an erase time of 1 ns in GaSb QDs for an electric field of 330 kV/cm

  1. Dissociating response systems: erasing fear from memory.

    Science.gov (United States)

    Soeter, Marieke; Kindt, Merel

    2010-07-01

    interventions persistently erasing fear responses from trauma memory without affecting the actual recollection.

  2. Physicochemical and Electrical Properties of Praseodymium Oxides

    Directory of Open Access Journals (Sweden)

    Sergio Ferro

    2011-01-01

    Full Text Available The industrial research is continuously looking for novelties that could improve the applied processes, increasing the yields, lowering the costs, or improving the performances. In industrial electrochemistry, one more aspect is the stability of electrode materials, which is generally balanced by the catalytic activity: the higher the latter, the lower the former. A compromise has to be found, and an optimization is often the result of new ideas that completely change the way of thinking. Praseodymium-oxide-based cathodes have been proved to be quite interesting devices: the hydrogen evolution reaction is guaranteed by the presence of a noble metal (platinum and/or rhodium, while the stability and poisoning resistance seem to be strongly improved by the presence of lanthanide oxides.

  3. Extraction of sub-gap density of states via capacitance-voltage measurement for the erasing process in a TFT charge-trapping memory

    Science.gov (United States)

    Chiang, Yen-Chang; Hsiao, Yang-Hsuan; Li, Jeng-Ting; Chen, Jen-Sue

    2018-02-01

    Charge-trapping memories (CTMs) based on zinc tin oxide (ZTO) semiconductor thin-film transistors (TFTs) can be programmed by a positive gate voltage and erased by a negative gate voltage in conjunction with light illumination. To understand the mechanism involved, the sub-gap density of states associated with ionized oxygen vacancies in the ZTO active layer is extracted from optical response capacitance-voltage (C-V) measurements. The corresponding energy states of ionized oxygen vacancies are observed below the conduction band minimum at approximately 0.5-1.0 eV. From a comparison of the fitted oxygen vacancy concentration in the CTM-TFT after the light-bias erasing operation, it is found that the pristine-erased device contains more oxygen vacancies than the program-erased device because the trapped electrons in the programmed device are pulled into the active layer and neutralized by the oxygen vacancies that are present there.

  4. Synthesis and electrical characterization of tungsten oxide nanowires

    Institute of Scientific and Technical Information of China (English)

    Huang Rui; Zhu Jing; Yu Rong

    2009-01-01

    Tungsten oxide nanowires of diameters ranging from 7 to 200 nm are prepared on a tungsten rod substrate by using the chemical vapour deposition (CVD) method with vapour-solid (VS) mechanism. Tin powders are used to control oxygen concentration in the furnace, thereby assisting the growth of the tungsten oxide nanowires. The grown tungsten oxide nanowires are determined to be of crystalline W18O49. Ⅰ-Ⅴ curves are measured by an in situ transmission electron microscope (TEM) to investigate the electrical properties of the nanowires. All of the Ⅰ-Ⅴ curves observed are symmetric, which reveals that the tungsten oxide nanowires are semiconducting. Quantitative analyses of the experimental I V curves by using a metal-semiconductor-metal (MSM) model give some intrinsic parameters of the tungsten oxide nanowires, such as the carrier concentration, the carrier mobility and the conductivity.

  5. Light-erasable embedded charge-trapping memory based on MoS2 for system-on-panel applications

    Science.gov (United States)

    He, Long-Fei; Zhu, Hao; Xu, Jing; Liu, Hao; Nie, Xin-Ran; Chen, Lin; Sun, Qing-Qing; Xia, Yang; Wei Zhang, David

    2017-11-01

    The continuous scaling and challenges in device integrations in modern portable electronic products have aroused many scientific interests, and a great deal of effort has been made in seeking solutions towards a more microminiaturized package assembled with smaller and more powerful components. In this study, an embedded light-erasable charge-trapping memory with a high-k dielectric stack (Al2O3/HfO2/Al2O3) and an atomically thin MoS2 channel has been fabricated and fully characterized. The memory exhibits a sufficient memory window, fast programming and erasing (P/E) speed, and high On/Off current ratio up to 107. Less than 25% memory window degradation is observed after projected 10-year retention, and the device functions perfectly after 8000 P/E operation cycles. Furthermore, the programmed device can be fully erased by incident light without electrical assistance. Such excellent memory performance originates from the intrinsic properties of two-dimensional (2D) MoS2 and the engineered back-gate dielectric stack. Our integration of 2D semiconductors in the infrastructure of light-erasable charge-trapping memory is very promising for future system-on-panel applications like storage of metadata and flexible imaging arrays.

  6. Vanadium Doped Tungsten Oxide Material - Electrical Physical and Sensing Properties

    Directory of Open Access Journals (Sweden)

    Shishkin N. Y.

    2008-05-01

    Full Text Available The electrical physical and sensing (to VOCs and inorganic gases properties of vanadium doped tungsten oxide in the regions of phase transition temperature were investigated. Vanadium oxide (II dimerization was observed in the doped material, corresponding to new phase transition. The extreme sensitivity and selectivity to chemically active gases and vapors in small concentrations: CO, NOx, NH3 acetone, ethanol near phase transitions temperature was found. Sensor elements were manufactured for the quantitative detection (close to 1 ppm of alcohol and ammonia.

  7. Electrical current mediated interconversion between graphene oxide to reduced grapene oxide

    Science.gov (United States)

    Teoh, H. F.; Tao, Y.; Tok, E. S.; Ho, G. W.; Sow, C. H.

    2011-04-01

    In this work, we demonstrate that graphene oxide (GO) can be reversibly converted to reduced-graphene-oxide (rGO) through the use of electric current. Strong electric field could cause ionization of water molecules in air to generate H+ ions at cathode, causing GO to be reduced. When the bias is reversed, the same electrode becomes positive and OH- ions are produced. According to Le Chatelier Principle, it then favors the reverse reaction, converting rGO back to GO, GO+2H++2e-=>rGO+H2O. X-ray spectroscopy and Raman spectroscopy were carried to verify the conversion reversibility in the reversed process.

  8. Temperature-dependent electrical property transition of graphene oxide paper

    International Nuclear Information System (INIS)

    Huang Xingyi; Jiang Pingkai; Zhi Chunyi; Golberg, Dmitri; Bando, Yoshio; Tanaka, Toshikatsu

    2012-01-01

    Reduction of graphene oxide is primarily important because different reduction methods may result in graphene with totally different properties. For systematically exploring the reduction of graphene oxide, studies of the temperature-dependent electrical properties of graphene oxide (GO) are urgently required. In this work, for the first time, broadband dielectric spectroscopy was used to carry out an in situ investigation on the transition of the electrical properties of GO paper from −40 to 150 °C. The results clearly reveal a very interesting four-stage transition of electrical properties of GO paper with increasing temperature: insulator below 10 °C (stage 1), semiconductor at between 10 and 90 °C (stage 2), insulator at between 90 and 100 °C (stage 3), and semiconductor again at above 100 °C (stage 4). Subsequently, the transition mechanism was discussed in combination with detailed dielectric properties, microstructure and thermogravimetric analyses. It is suggested that the temperature-dependent transition of electronic properties of GO is closely associated with the ion mobility, water molecules removal and the reduction of GO in the GO paper. Most importantly, the present work clearly demonstrates the reduction of GO paper starts at above 100 °C. (paper)

  9. Thermo-electric oxidization of iron in lithium niobate crystals

    International Nuclear Information System (INIS)

    Falk, Matthias

    2007-01-01

    Lithium niobate crystals (LiNbO 3 ) are a promising material for nonlinear-optical applications like frequency conversion to generate visible light, e.g., in laser displays, but their achievable output power is greatly limited by the ''optical damage'', i.e., light-induced refractive-index changes caused by excitation of electrons from iron impurities and the subsequent retrapping in unilluminated areas of the crystal. The resulting space-charge fields modify the refractive indices due to the electro-optic effect. By this ''photorefractive effect'' the phase-matching condition, i.e., the avoidance of destructive interference between light generated at different crystal positions due to the dispersion of the fundamental wave and the converted wave, is disturbed critically above a certain light intensity threshold. The influence of annealing treatments conducted in the presence of an externally applied electric field (''thermo-electric oxidization'') on the valence state of iron impurities and thereby on the optical damage is investigated. It is observed that for highly iron-doped LiNbO 3 crystals this treatment leads to a nearly complete oxidization from Fe 2+ to Fe 3+ indicated by the disappearance of the absorption caused by Fe 2+ . During the treatment an absorption front forms that moves through the crystal. The absorption in the visible as well as the electrical conductivity are decreased by up to five orders of magnitude due to this novel treatment. The ratio of the Fe 2+ concentration to the total iron concentration - a measure for the strength of the oxidization - is in the order of 10 -6 for oxidized crystals whereas it is about 10 -1 for untreated samples. Birefringence changes are observed at the absorption front that are explained by the removal of hydrogen and lithium ions from the crystal that compensate for the charges of the also removed electrons from Fe 2+ . A microscopic shock-wave model is developed that explains the observed absorption front by

  10. Electrical conductivity of uranium-antimony oxide catalysts

    International Nuclear Information System (INIS)

    Golunski, S.E.; Nevell, T.G.; Hucknall, D.J.

    1985-01-01

    The relative ionic and electronic contributions to the electrical conductivity of a uranium-antimony oxide catalyst and of USbO 5 have been determined from measurements of a.c. and d.c. conductance. Under inert atmospheres (390 to 775 K) conduction in the catalyst (predominantly USb 3 O 10 together with small proportions of Sb 2 O 4 and USbO 5 ) is associated with both electronic and effectively charged atomic point defects. Only electronic conduction occurs in USbO 5 . Under oxygen (10 to 70 kPa, 493 to 682 K) both materials are n-type semiconductors at higher temperatures, but at lower temperatures semiconducting behaviour varies with the pressure of oxygen. Heating USbO 5 in oxygen induces an ionic contribution to conductivity. Ionic conduction in the catalyst is eliminated by heating in hydrogen or propene at 470 K but is restored by heating in oxygen. It is suggested that both charged oxygen vacancies and interstitial oxide ions are involved in interactions of gaseous components with uranium-antimony oxides. With alkenes, interstitial oxide ions give rise to the products of selective partial oxidation. (author)

  11. Electrical conductivity of uranium-antimony oxide catalysts

    Energy Technology Data Exchange (ETDEWEB)

    Golunski, S.E.; Nevell, T.G. (Portsmouth Polytechnic (UK)); Hucknall, D.J. (Southampton Univ. (UK). Dept. of Chemistry)

    1985-05-01

    The relative ionic and electronic contributions to the electrical conductivity of a uranium-antimony oxide catalyst and of USbO/sub 5/ have been determined from measurements of a.c. and d.c. conductance. Under inert atmospheres (390 to 775 K) conduction in the catalyst (predominantly USb/sub 3/O/sub 10/ together with small proportions of Sb/sub 2/O/sub 4/ and USbO/sub 5/) is associated with both electronic and effectively charged atomic point defects. Only electronic conduction occurs in USbO/sub 5/. Under oxygen (10 to 70 kPa, 493 to 682 K) both materials are n-type semiconductors at higher temperatures, but at lower temperatures semiconducting behaviour varies with the pressure of oxygen. Heating USbO/sub 5/ in oxygen induces an ionic contribution to conductivity. Ionic conduction in the catalyst is eliminated by heating in hydrogen or propene at 470 K but is restored by heating in oxygen. It is suggested that both charged oxygen vacancies and interstitial oxide ions are involved in interactions of gaseous components with uranium-antimony oxides. With alkenes, interstitial oxide ions give rise to the products of selective partial oxidation.

  12. Incorporation of polydimethylsiloxane with reduced graphene oxide and zinc oxide for tensile and electrical properties

    Science.gov (United States)

    Danial, N. S.; Ramli, Muhammad. M.; Halin, D. S. C.; Hong, H. C.; Isa, S. Salwa M.; Abdullah, M. M. A. B.; Anhar, N. A. M.; Talip, L. F. A.; Mazlan, N. S.

    2017-09-01

    Polydimethylsiloxane (PDMS) is an organosilicon polymer that is commonly used to incorporate with other fillers. PDMS in high viscous liquid form is mechanically stirred with reduced graphene oxide (rGO) and mixed with zinc oxide (ZnO) with specific ratio, thus rendering into two types of samples. The mechanical and electrical properties of both samples are characterized. The result shows that PDMS sample with 50 mg rGO has the highest tensile strength with the value of 9.1 MPa. For electrical properties, sample with the lowest resistance is PDMS with 50 mg rGO and ZnO with the value of l.67×l05 Ω. This experiment shows the significant role of conductive fillers like rGO and ZnO incorporated in polymeric material such as PDMS to improve its electrical properties.

  13. A low-voltage flash memory cell utilizing the gate-injection program/erase method with a recessed channel structure

    International Nuclear Information System (INIS)

    Wu Dake; Huang Ru; Wang Pengfei; Tang Poren; Wang Yangyuan

    2008-01-01

    In this paper, a low-voltage recessed channel SONOS flash memory using the gate-injection program/erase method is proposed and investigated for NAND application. It is shown that the proposed flash memory can achieve 8 V lower programming voltage compared with planar flash memory, due to the effective capacitance coupling and the electric-field enhancement by combining the recessed channel structure and the gate-injection program/erase method. In addition, more than 30% larger threshold voltage window and improved short channel effects can be obtained in the proposed flash memory

  14. Electrical Properties of Electrospun Sb-Doped Tin Oxide Nanofibers

    International Nuclear Information System (INIS)

    Leon-Brito, Neliza; Melendez, Anamaris; Ramos, Idalia; Pinto, Nicholas J; Santiago-Aviles, Jorge J

    2007-01-01

    Transparent and conducting tin oxide fibers are of considerable interest for solar energy conversion, sensors and in various electrode applications. Appropriate doping can further enhance the conductivity of the fibers without loosing optical transparency. Undoped and antimony-doped tin oxide fibers have been synthesized by our group in previous work using electrospinning and metallorganic decomposition techniques. The undoped tin oxide fibers were obtained using a mixture of pure tin oxide sol made from tin (IV) chloride : water : propanol : isopropanol at a molar ratio of 1:9:9:6, and a viscous solution made from poly(ethylene oxide) (PEO) and chloroform at a ratio of 200 mg PEO/10 mL chloroform. In this work, antimony doped fibers were obtained by adding a dopant solution of antimony trichloride and isopropanol at a ratio of 2.2812 g antimony trichloride/10 ml isopropanol to the original tin oxide precursor solution. The Sb concentration in the precursor solution is 1.5%. After deposition, the fibers were sintered 600deg. C in air for two hours. The electrical conductivity of single fibers measured at room temperature increases by up to three orders of magnitude when compared to undoped fibers prepared using the same method. The resistivity change as a function of the annealing temperature can be attributed to the thermally activated formation of a nearly stoichoimetric solid. The resistivity of the fibers changes monotonically with temperature from 714Ω-cm at 2 K to 0.1Ω-cm at 300 K. In the temperature range from 2 to 8 K the fibers have a positive magnetoresistance (MR) with the highest value of 155 % at 2 K and ±9 T. At temperatures of 10 and 12 K the sign of MR changes to negative values for low magnetic fields and positive for high magnetic fields. For higher temperatures (15 K and above) the MR becomes negative and its magnitude decreases with temperature

  15. Effects of iron content on electrical resistivity of oxide films on Zr-base alloys

    International Nuclear Information System (INIS)

    Kubo, Toshio; Uno, Masayoshi

    1991-01-01

    Measurements of electrical resistivity were made for oxide films formed by anodic oxidation and steam oxidation (400degC/12 h) on Zr plates with different Fe contents. When the Fe content was higher than about 1,000 ppm the electrical resistivity of the steam oxide films was almost equivalent to that of the anodic oxide films, while at lower Fe content the former exhibited lower electrical resistivity than the latter by about 1∼3 orders of magnitude. The anodic oxide film was an almost homogeneous single oxide layer. The steam oxide films, on the other hand, were composed of duplex oxide layers. The oxide layer formed in the vicinity of the oxide/metal interface had higher electrical resistivity than the near-surface oxide layer by about 1∼4 orders of magnitude. The oxide layer in the vicinity of the interface could act as a protective film against corrosion and its electrical resistivity is one important factor controlling the layer protectiveness. The electrical resistivity of the oxide/metal interfacial layer was strongly dependent on the Fe content. One possible reason for Fe to improve the corrosion resistance is that Fe ions would tend to stabilize the tetragonal (or cubic) phase and consequently suppress the formation of open pores and cracks in the interfacial layer. (author)

  16. Potential of Reversible Solid Oxide Cells as Electricity Storage System

    Directory of Open Access Journals (Sweden)

    Paolo Di Giorgio

    2016-08-01

    Full Text Available Electrical energy storage (EES systems allow shifting the time of electric power generation from that of consumption, and they are expected to play a major role in future electric grids where the share of intermittent renewable energy systems (RES, and especially solar and wind power plants, is planned to increase. No commercially available technology complies with all the required specifications for an efficient and reliable EES system. Reversible solid oxide cells (ReSOC working in both fuel cell and electrolysis modes could be a cost effective and highly efficient EES, but are not yet ready for the market. In fact, using the system in fuel cell mode produces high temperature heat that can be recovered during electrolysis, when a heat source is necessary. Before ReSOCs can be used as EES systems, many problems have to be solved. This paper presents a new ReSOC concept, where the thermal energy produced during fuel cell mode is stored as sensible or latent heat, respectively, in a high density and high specific heat material and in a phase change material (PCM and used during electrolysis operation. The study of two different storage concepts is performed using a lumped parameters ReSOC stack model coupled with a suitable balance of plant. The optimal roundtrip efficiency calculated for both of the configurations studied is not far from 70% and results from a trade-off between the stack roundtrip efficiency and the energy consumed by the auxiliary power systems.

  17. Analysis of writing and erasing behaviours in phase change materials

    Energy Technology Data Exchange (ETDEWEB)

    Hyot, B. E-mail: bhyot@cea.fr; Poupinet, L.; Gehanno, V.; Desre, P.J

    2002-09-01

    An understanding of the process involved in writing and erasing of phase-change optical recording media is vital to the development of new, and the improvement of existing, products. The present work investigates both experimental and theoretical laser-induced fast structural transformations of GeSbTe thin films. Optical and microstructural changes are correlated using both a static tester and transmission electron microscopy. In the second part of this paper we try to elucidate the physics underlying the amorphous-to-crystalline phase transformation under short-pulse laser excitation. Both thermal and thermodynamical behaviours must be taken into account to illustrate real processes.

  18. Analysis of writing and erasing behaviours in phase change materials

    International Nuclear Information System (INIS)

    Hyot, B.; Poupinet, L.; Gehanno, V.; Desre, P.J.

    2002-01-01

    An understanding of the process involved in writing and erasing of phase-change optical recording media is vital to the development of new, and the improvement of existing, products. The present work investigates both experimental and theoretical laser-induced fast structural transformations of GeSbTe thin films. Optical and microstructural changes are correlated using both a static tester and transmission electron microscopy. In the second part of this paper we try to elucidate the physics underlying the amorphous-to-crystalline phase transformation under short-pulse laser excitation. Both thermal and thermodynamical behaviours must be taken into account to illustrate real processes

  19. Optically erasable and rewritable solid-state holograms.

    Science.gov (United States)

    Gaylord, T. K.; Rabson, T. A.; Tittel, F. K.

    1972-01-01

    Optical holographic storage in single-crystal LiNbO3 is described which can be optically erased at room temperature and then rewritten with no degradation in efficiency or writing rate. The diffraction efficiencies associated with the process are about 0.0001. Some variations from previously obtained results include a lack of threshold power density for writing, very-long-term persistence of the stored hologram, and a lack of a dependence of the diffracted intensity on the polarization of the readout beam.

  20. Influence of Graphene Oxide on the Tribological and Electrical Properties of PMMA Composites

    Directory of Open Access Journals (Sweden)

    Jiale Song

    2013-01-01

    Full Text Available The graphene oxide (GO was obtained by Hummers' method using natural graphite as raw materials. Then, the GO/poly(methyl methacrylate (PMMA nanocomposites were prepared by in situ polymerization. The tribological and electrical properties of nanocomposites were studied. As a result, the frictional coefficient of GO/PMMA nanocomposites was prominently improved with the content of the graphene oxide increasing. The electrical properties of nanocomposites were slightly increased when adding the graphene oxide.

  1. Influence of radiational oxidation on the kinetics of electrization of polypropylene by electron irradiation

    International Nuclear Information System (INIS)

    Rozno, A.G.; Romanov, A.V.; Sukhov, N.L.; Gromov, V.V.; Ershov, B.G.

    1992-01-01

    Kinetics of volumetric electric charge and accumulation of paramagnetic centres (PMC) in polypropylene (PP) of two crystal modifications, subjected to radiational oxidation were studied. A correlation between volumetric charge and PMC in radiationally oxidation PP was detected. Considerable influence of crystal phase on the processes of charging and radiational oxidation was revealed

  2. Decoherence in a double-slit quantum eraser

    International Nuclear Information System (INIS)

    Torres-Ruiz, F. A.; Lima, G.; Delgado, A.; Saavedra, C.; Padua, S.

    2010-01-01

    We study and experimentally implement a double-slit quantum eraser in the presence of a controlled decoherence mechanism. A two-photon state, produced in a spontaneous parametric down-conversion process, is prepared in a maximally entangled polarization state. A birefringent double slit is illuminated by one of the down-converted photons, and it acts as a single-photon two-qubits controlled-not gate that couples the polarization with the transversal momentum of these photons. The other photon, which acts as a which-path marker, is sent through a Mach-Zehnder-like interferometer. When the interferometer is partially unbalanced, it behaves as a controlled source of decoherence for polarization states of down-converted photons. We show the transition from wavelike to particle-like behavior of the signal photons crossing the double slit as a function of the decoherence parameter, which depends on the length path difference at the interferometer.

  3. An electrical method for the measurement of the thermal and electrical conductivity of reduced graphene oxide nanostructures.

    Science.gov (United States)

    Schwamb, Timo; Burg, Brian R; Schirmer, Niklas C; Poulikakos, Dimos

    2009-10-07

    This paper introduces an electrical four-point measurement method enabling thermal and electrical conductivity measurements of nanoscale materials. The method was applied to determine the thermal and electrical conductivity of reduced graphene oxide flakes. The dielectrophoretically deposited samples exhibited thermal conductivities in the range of 0.14-2.87 W m(-1) K(-1) and electrical conductivities in the range of 6.2 x 10(2)-6.2 x 10(3) Omega(-1) m(-1). The measured properties of each flake were found to be dependent on the duration of the thermal reduction and are in this sense controllable.

  4. Electrical Generation for More-Electric Aircraft Using Solid Oxide Fuel Cells

    Energy Technology Data Exchange (ETDEWEB)

    Whyatt, Greg A.; Chick, Lawrence A.

    2012-04-01

    This report examines the potential for Solid-Oxide Fuel Cells (SOFC) to provide electrical generation on-board commercial aircraft. Unlike a turbine-based auxiliary power unit (APU) a solid oxide fuel cell power unit (SOFCPU) would be more efficient than using the main engine generators to generate electricity and would operate continuously during flight. The focus of this study is on more-electric aircraft which minimize bleed air extraction from the engines and instead use electrical power obtained from generators driven by the main engines to satisfy all major loads. The increased electrical generation increases the potential fuel savings obtainable through more efficient electrical generation using a SOFCPU. However, the weight added to the aircraft by the SOFCPU impacts the main engine fuel consumption which reduces the potential fuel savings. To investigate these relationships the Boeing 787­8 was used as a case study. The potential performance of the SOFCPU was determined by coupling flowsheet modeling using ChemCAD software with a stack performance algorithm. For a given stack operating condition (cell voltage, anode utilization, stack pressure, target cell exit temperature), ChemCAD software was used to determine the cathode air rate to provide stack thermal balance, the heat exchanger duties, the gross power output for a given fuel rate, the parasitic power for the anode recycle blower and net power obtained from (or required by) the compressor/expander. The SOFC is based on the Gen4 Delphi planar SOFC with assumed modifications to tailor it to this application. The size of the stack needed to satisfy the specified condition was assessed using an empirically-based algorithm. The algorithm predicts stack power density based on the pressure, inlet temperature, cell voltage and anode and cathode inlet flows and compositions. The algorithm was developed by enhancing a model for a well-established material set operating at atmospheric pressure to reflect the

  5. Electric field cycling behavior of ferroelectric hafnium oxide.

    Science.gov (United States)

    Schenk, Tony; Schroeder, Uwe; Pešić, Milan; Popovici, Mihaela; Pershin, Yuriy V; Mikolajick, Thomas

    2014-11-26

    HfO2 based ferroelectrics are lead-free, simple binary oxides with nonperovskite structure and low permittivity. They just recently started attracting attention of theoretical groups in the fields of ferroelectric memories and electrostatic supercapacitors. A modified approach of harmonic analysis is introduced for temperature-dependent studies of the field cycling behavior and the underlying defect mechanisms. Activation energies for wake-up and fatigue are extracted. Notably, all values are about 100 meV, which is 1 order of magnitude lower than for conventional ferroelectrics like lead zirconate titanate (PZT). This difference is mainly atttributed to the one to two orders of magnitude higher electric fields used for cycling and to the different surface to volume ratios between the 10 nm thin films in this study and the bulk samples of former measurements or simulations. Moreover, a new, analog-like split-up effect of switching peaks by field cycling is discovered and is explained by a network model based on memcapacitive behavior as a result of defect redistribution.

  6. Flash Memory Reliability: Read, Program, and Erase Latency Versus Endurance Cycling

    Science.gov (United States)

    Heidecker, Jason

    2010-01-01

    This report documents the efforts and results of the fiscal year (FY) 2010 NASA Electronic Parts and Packaging Program (NEPP) task for nonvolatile memory (NVM) reliability. This year's focus was to measure latency (read, program, and erase) of NAND Flash memories and determine how these parameters drift with erase/program/read endurance cycling.

  7. Quantum erasers and probing classifications of entanglement via nuclear magnetic resonance

    International Nuclear Information System (INIS)

    Teklemariam, G.; Fortunato, E.M.; Pravia, M.A.; Sharf, Y.; Havel, T.F.; Cory, D.G.; Bhattaharyya, A.; Hou, J.

    2002-01-01

    We report the implementation of two- and three-spin quantum erasers using nuclear magnetic resonance (NMR). Quantum erasers provide a means of manipulating quantum entanglement, an important resource for quantum information processing. Here, we first use a two-spin system to illustrate the essential features of quantum erasers. The extension to a three-spin 'disentanglement eraser' shows that entanglement in a subensemble can be recovered if a proper measurement of the ancillary system is carried out. Finally, we use the same pair of orthogonal decoherent operations used in quantum erasers to probe the two classes of entanglement in tripartite quantum systems: the Greenberger-Horne-Zeilinger state and the W state. A detailed presentation is given of the experimental decoherent control methods that emulate the loss of phase information in strong measurements, and the use of NMR decoupling techniques to implement partial trace operations

  8. The influence of Ac parameters in the process of micro-arc oxidation film electric breakdown

    Directory of Open Access Journals (Sweden)

    Ma Jin

    2016-01-01

    Full Text Available This paper studies the electric breakdown discharge process of micro-arc oxidation film on the surface of aluminum alloy. Based on the analysis of the AC parameters variation in the micro-arc oxidation process, the following conclusions can be drawn: The growth of oxide film can be divided into three stages, and Oxide film breakdown discharge occurs twice in the micro-arc oxidation process. The first stage is the formation and disruptive discharge of amorphous oxide film, producing the ceramic oxide granules, which belong to solid dielectric breakdown. In this stage the membrane voltage of the oxide film plays a key role; the second stage is the formation of ceramic oxide film, the ceramic oxide granules turns into porous structure oxide film in this stage; the third stage is the growth of ceramic oxide film, the gas film that forms in the oxide film’s porous structure is electric broken-down, which is the second breakdown discharge process, the current density on the oxide film surface could affect the breakdown process significantly.

  9. Oxide-nitride-oxide dielectric stacks with Si nanoparticles obtained by low-energy ion beam synthesis

    International Nuclear Information System (INIS)

    Ioannou-Sougleridis, V; Dimitrakis, P; Vamvakas, V Em; Normand, P; Bonafos, C; Schamm, S; Mouti, A; Assayag, G Ben; Paillard, V

    2007-01-01

    Formation of a thin band of silicon nanoparticles within silicon nitride films by low-energy (1 keV) silicon ion implantation and subsequent thermal annealing is demonstrated. Electrical characterization of metal-insulator-semiconductor capacitors reveals that oxide/Si-nanoparticles-nitride/oxide dielectric stacks exhibit enhanced charge transfer characteristics between the substrate and the silicon nitride layer compared to dielectric stacks using unimplanted silicon nitride. Attractive results are obtained in terms of write/erase memory characteristics and data retention, indicating the large potential of the low-energy ion-beam-synthesis technique in SONOS memory technology

  10. In-situ measurement of the electrical conductivity of aluminum oxide in HFIR

    Energy Technology Data Exchange (ETDEWEB)

    Zinkle, S.J.; White, D.P.; Snead, L.L. [Oak Ridge National Lab., TN (United States)] [and others

    1996-10-01

    A collaborative DOE/Monbusho irradiation experiment has been completed which measured the in-situ electrical resistivity of 12 different grades of aluminum oxide during HFIR neutron irradiation at 450{degrees}C. No evidence for bulk RIED was observed following irradiation to a maximum dose of 3 dpa with an applied dc electric field of 200 V/mm.

  11. Electrical Transport Ability of Nanostructured Potassium-Doped Titanium Oxide Film

    Science.gov (United States)

    Lee, So-Yoon; Matsuno, Ryosuke; Ishihara, Kazuhiko; Takai, Madoka

    2011-02-01

    Potassium-doped nanostructured titanium oxide films were fabricated using a wet corrosion process with various KOH solutions. The doped condition of potassium in TiO2 was confirmed by Raman spectroscopy and X-ray photoelectron spectroscopy (XPS). Nanotubular were synthesized at a dopant concentration of 0.27%, these structures disappeared. To investigate the electrical properties of K-doped TiO2, pseudo metal-oxide-semiconductor field-effect transistor (MOSFET) samples were fabricated. The samples exhibited a distinct electrical behavior and p-type characteristics. The electrical behavior was governed by the volume of the dopant when the dopant concentration was 0.18%.

  12. Digital laser printing of metal/metal-oxide nano-composites with tunable electrical properties

    International Nuclear Information System (INIS)

    Zenou, M; Kotler, Z; Sa’ar, A

    2016-01-01

    We study the electrical properties of aluminum structures printed by the laser forward transfer of molten, femtoliter droplets in air. The resulting printed material is an aluminum/aluminum-oxide nano-composite. By controlling the printing conditions, and thereby the droplet volume, its jetting velocity and duration, it is possible to tune the electrical resistivity to a large extent. The material resistivity depends on the degree of oxidation which takes place during jetting and on the formation of electrical contact points as molten droplets impact the substrate. Evidence for these processes is provided by FIB cross sections of printed structures. (paper)

  13. Electrical and optical performance of transparent conducting oxide films deposited by electrostatic spray assisted vapour deposition.

    Science.gov (United States)

    Hou, Xianghui; Choy, Kwang-Leong; Liu, Jun-Peng

    2011-09-01

    Transparent conducting oxide (TCO) films have the remarkable combination of high electrical conductivity and optical transparency. There is always a strong motivation to produce TCO films with good performance at low cost. Electrostatic Spray Assisted Vapor Deposition (ESAVD), as a variant of chemical vapour deposition (CVD), is a non-vacuum and low-cost deposition method. Several types of TCO films have been deposited using ESAVD process, including indium tin oxide (ITO), antimony-doped tin oxide (ATO), and fluorine doped tin oxide (FTO). This paper reports the electrical and optical properties of TCO films produced by ESAVD methods, as well as the effects of post treatment by plasma hydrogenation on these TCO films. The possible mechanisms involved during plasma hydrogenation of TCO films are also discussed. Reduction and etching effect during plasma hydrogenation are the most important factors which determine the optical and electrical performance of TCO films.

  14. Local electrical properties of thermally grown oxide films formed on duplex stainless steel surfaces

    Science.gov (United States)

    Guo, L. Q.; Yang, B. J.; He, J. Y.; Qiao, L. J.

    2018-06-01

    The local electrical properties of thermally grown oxide films formed on ferrite and austenite surfaces of duplex stainless steel at different temperatures were investigated by Current sensing atomic force microscopy, X-ray Photoelectron Spectroscopy (XPS) and Auger Electron Spectroscopy (AES). The current maps and XPS/AES analyses show that the oxide films covering austenite and ferrite surfaces formed at different temperatures exhibit different local electrical characteristics, thickness and composition. The dependence of electrical conductivity of oxide films covering austenite and ferrite surface on the formation temperature is attributed to the film thickness and semiconducting structures, which is intrinsically related to thermodynamics and kinetics process of film grown at different temperature. This is well elucidated by corresponding semiconductor band structures of oxide films formed on austenite and ferrite phases at different temperature.

  15. Laser induced Erasable Patterns in a N* Liquid Crystal on an Iron Doped Lithium Niobate (Postprint)

    Science.gov (United States)

    2017-10-12

    4685; Clearance Date: 22 Sep 2017. This document contains color . Journal article published in Optics Express, Vol. 25, No. 21, 22 Sep 2017. © 2017...be applied selectively to erase these patterns. Thus, a promising method is reported to generate reconfigurable patterns, photonic motives , and...erase these patterns. Thus, a promising method is reported to generate reconfigurable patterns, photonic motives , and touch sensitive devices in a

  16. Effect of aluminum oxide doping on the structural, electrical, and optical properties of zinc oxide (AOZO) nanofibers synthesized by electrospinning

    International Nuclear Information System (INIS)

    Lotus, A.F.; Kang, Y.C.; Walker, J.I.; Ramsier, R.D.; Chase, G.G.

    2010-01-01

    Zinc oxide nanofibers doped with aluminum oxide were prepared by sol-gel processing and electrospinning techniques using polyvinylpyrrolidone (PVP), zinc acetate and aluminum acetate as precursors. The resulting nanofibers were characterized by scanning electron microscopy (SEM), X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), UV-Vis spectroscopy, and current-voltage (I-V) properties. The nanofibers had diameters in the range of 60-150 nm. The incorporation of aluminum oxide resulted in a decrease in the crystallite sizes of the zinc oxide nanofibers. Aluminum oxide doped zinc oxide (AOZO) nanofibers exhibited lower bandgap energies compared to undoped zinc oxide nanofibers. However, as the aluminum content (Al/(Al + Zn) x 100%) was increased from 1.70 at.% to 3.20 at.% in the electrospinning solution, the bandgap energy increased resulting in lower conductivity. The electrical conductivity of the AOZO samples was found to depend on the amount of aluminum dopant in the matrix as reflected in the changes in oxidation state elucidated from XPS data. Electrospinning was found to be a productive, simple, and easy method for tuning the bandgap energy and conductivity of zinc oxide semiconducting nanofibers.

  17. Depigmentation and hypertrophic scars after application of a fluid lactic acid tattoo eraser.

    Science.gov (United States)

    Wollina, Uwe

    2015-05-01

    Tattoo removal is often requested by patients. The gold standard is laser tattoo removal that can be time- and cost-intensive. Therefore, safe alternatives without lasers, pain, and scars would be desirable. We wanted to address safety of chemical tattoo erasers. We report a case of depigmentation and hypertrophic scars after use of a chemical tattoo eraser and searched the literature. Chemical tattoo erasers are not only used by physicians, but also nonmedical professionals such as beauticians, tattoo artists, and others. The case report we observed and other cases from the literature suggest that lactic acid based tattoo erasers are risky. Available safety data are unsufficient to recommend such procedure as an alternative to current laser therapy. Chemical tattoo erasers based on lactic acid may be capable to remove tattoo ink but the procedure bears safety risks of permanent adverse effects. For the safety of patients, better regulations for tattoo erasers need to be implemented. Patients need to be informed about adverse effects by such procedures.

  18. Comparison of properties of silver-metal oxide electrical contact materials

    Directory of Open Access Journals (Sweden)

    Ćosović V.

    2012-01-01

    Full Text Available Changes in physical properties such as density, porosity, hardness and electrical conductivity of the Ag-SnO2 and Ag-SnO2In2O3 electrical contact materials induced by introduction of metal oxide nanoparticles were investigated. Properties of the obtained silver-metal oxide nanoparticle composites are discussed and presented in comparison to their counterparts with the micro metal oxide particles as well as comparable Ag-SnO2WO3 and Ag-ZnO contact materials. Studied silvermetal oxide composites were produced by powder metallurgy method from very fine pure silver and micro- and nanoparticle metal oxide powders. Very uniform microstructures were obtained for all investigated composites and they exhibited physical properties that are comparable with relevant properties of equivalent commercial silver based electrical contact materials. Both Ag-SnO2 and Ag- SnO2In2O3 composites with metal oxide nanoparticles were found to have lower porosity, higher density and hardness than their respective counterparts which can be attributed to better dispersion hardening i.e. higher degree of dispersion of metal oxide in silver matrix.

  19. Automated AC Electrical Impedance Measurement of Ceramic Oxides by means of a Lock-in Amplifier

    International Nuclear Information System (INIS)

    Al-Khawaja, S.; Al-Sous, M. B.; Nasrallah, F.

    2009-06-01

    In this study, the electrical impedance of some ceramic oxides has been investigated employing the Perkin Elmer DSP 7280 Lock-in amplifier, while recording the electric response versus frequency and temperature at constant amplitude. Via integral automation of this lock-in with other delicate electrical measuring devices, a control program has been developed to accurately and swiftly acquire the frequency response of the sample, in order to lately infer the resulting samples' impedance in volt and ampere. Two maxima peaks characterising the impedance, in the curve of the doped molybdenum oxide have been observed discerning two phases in the sample (doped with 40% of niobium oxide), which shows a remarkable relaxation related to improvement in its ionic conductivity within the solid phase, with respect to increasing frequency. (author)

  20. Electrical Characterization of Spherical Copper Oxide Memristive Array Sensors

    Science.gov (United States)

    2014-03-27

    47 4.2 A 47 µm flake reaching between two spheres . . . . . . . . . . . . . . . . . . 47 x Figure Page 4.3 The XRD pattern shows the copper spheres...image of the copper sphere surface and a zoomed view of emphasizing the flaking feature on the surface. These images depict just one sphere to...spheres. Placed next to one-another, a copper flake extending 47 µm such as that shown in Figure 4.1 can result in an electrical short, which may

  1. Electrical transport through single-wall carbon nanotube-anodic aluminum oxide-aluminum heterostructures

    International Nuclear Information System (INIS)

    Kukkola, Jarmo; Rautio, Aatto; Sala, Giovanni; Pino, Flavio; Toth, Geza; Leino, Anne-Riikka; Maeklin, Jani; Jantunen, Heli; Uusimaeki, Antti; Kordas, Krisztian; Gracia, Eduardo; Terrones, Mauricio; Shchukarev, Andrey; Mikkola, Jyri-Pekka

    2010-01-01

    Aluminum foils were anodized in sulfuric acid solution to form thick porous anodic aluminum oxide (AAO) films of thickness ∼6 μm. Electrodes of carboxyl-functionalized single-wall carbon nanotube (SWCNT) thin films were inkjet printed on the anodic oxide layer and the electrical characteristics of the as-obtained SWCNT-AAO-Al structures were studied. Nonlinear current-voltage transport and strong temperature dependence of conduction through the structure was measured. The microstructure and chemical composition of the anodic oxide layer was analyzed using transmission and scanning electron microscopy as well as x-ray photoelectron spectroscopy. Schottky emission at the SWCNT-AAO and AAO-Al interfaces allowed by impurity states in the anodic aluminum oxide film together with ionic surface conduction on the pore walls of AAO gives a reasonable explanation for the measured electrical conduction. Calcined AAO is proposed as a dielectric material for SWCNT-field effect transistors.

  2. Ultrafine particles and nitrogen oxides generated by gas and electric cooking

    OpenAIRE

    Dennekamp, M; Howarth, S; Dick, C; Cherrie, J; Donaldson, K; Seaton, A

    2001-01-01

    OBJECTIVES—To measure the concentrations of particles less than 100 nm diameter and of oxides of nitrogen generated by cooking with gas and electricity, to comment on possible hazards to health in poorly ventilated kitchens.
METHODS—Experiments with gas and electric rings, grills, and ovens were used to compare different cooking procedures. Nitrogen oxides (NOx) were measured by a chemiluminescent ML9841A NOx analyser. A TSI 3934 scanning mobility particle sizer was used to measure average nu...

  3. Effect of hydrothermal treatment of coal on the oxidation susceptibility and electrical resistivity of HTT coke

    Energy Technology Data Exchange (ETDEWEB)

    Sarkar, N.B.; Sarkar, P.; Choudhury, A. [Central Fuel Research Institute, P.O. FRI, Dhanbad-828108, Jharkhand (India)

    2005-02-25

    The influence of hydrothermal treatment of coal prior to carbonization, on the oxidation susceptibility of resultant coke/char, calcined at 1350, 1800 and 2200 {sup o}C has been investigated. The non-isothermal thermogravimetric analysis technique has been employed, and parameters such as onset, DTG peak temperatures, and cumulative oxidation loss (wt.%) at different temperatures have been utilized to compare proneness to oxidation with respective untreated samples apart from electrical resistivity. Data suggest that all the cokes/chars samples produced from hydrothermally treated coals are less reactive and more electrically conductive (less resistive) than their respective untreated counterparts. But the extent of improvement of oxidation resistance and electrical conductivity appears to be coal-specific. The kinetic parameters obtained by non-linear regression analysis on multi-curve reveal that the n{sup th} order reaction model (where 'n' was found to vary from 0.9 to 1.3) is the best-fitted model. The higher activation energy values observed for hydrothermally treated coke samples are in agreement with the observation of TG analysis data. Overall results indicate the importance of introducing a hydrothermal treatment step for the improvement of oxidation resistance as well as electrical conductivity of the coke samples.

  4. The role of electric field during spray deposition on fluorine doped tin oxide film

    Energy Technology Data Exchange (ETDEWEB)

    Kumar, Anuj, E-mail: anujkumarom@gmail.com; Swami, Sanjay Kumar; Dutta, Viresh

    2014-03-05

    Highlights: • Fluorine doped tin oxide deposition by spray technique. • The growth reaction of tin oxide, controlled by the electric field on the substrate surface. • Deposit on large scale substrate 10 cm × 10 cm by single nozzle. • Obtained good quality of thin film. -- Abstract: The fluorine doped tin oxide film has been deposited on 10 cm × 10 cm glass substrate by using spray technique with a voltage applied between the nozzle and an annular electrode placed 2 mm below the nozzle. The effect of the electric field thus created during the spray deposition on structural, optical and electrical properties of SnO{sub 2}:F (FTO) film was studied. X-ray diffraction pattern revealed the presence of cassiterite structure with (2 0 0) orientation for all the FTO film. SEM study revealed the formation of smooth and uniform surface FTO film under the electric field over the entire substrate area. The electrical measurements show that the film prepared under the electric field (for an applied voltage of 2000 V) had a resistivity ∼1.2 × 10{sup −3} Ω cm, carrier concentration ∼4.21 × 10{sup 20} cm{sup −3} and mobility ∼14.48 cm{sup 2} V{sup −1} s{sup −1}. The sprayed FTO film have the average transmission in the visible region of more than about 80%.

  5. Roles, and establishment, maintenance and erasing of the ...

    Indian Academy of Sciences (India)

    Heritable information in plants consists of genomic information in DNA sequence and ... methylation pattern acquired in response to abiotic or biotic stress is often ...... or oxidative including the. GPDL gene for. C hoi and. S ano. (. 2007. ) stress.

  6. Electrical and optical properties of amorphous indium zinc oxide films

    International Nuclear Information System (INIS)

    Ito, N.; Sato, Y.; Song, P.K.; Kaijio, A.; Inoue, K.; Shigesato, Y.

    2006-01-01

    Valence electron control and electron transport mechanisms on the amorphous indium zinc oxide (IZO) films were investigated. The amorphous IZO films were deposited by dc magnetron sputtering using an oxide ceramic IZO target (89.3 wt.% In 2 O 3 and 10.7 wt.% ZnO). N-type impurity dopings, such as Sn, Al or F, could not lead to the increase in carrier density in the IZO. Whereas, H 2 introduction into the IZO deposition process was confirmed to be effective to increase carrier density. By 30% H 2 introduction into the deposition process, carrier density increased from 3.08 x 10 2 to 7.65 x 10 2 cm -3 , which must be originated in generations of oxygen vacancies or interstitial Zn 2+ ions. Decrease in the transmittance in the near infrared region and increase in the optical band gap were observed with the H 2 introduction, which corresponded to the increase in carrier density. The lowest resistivity of 3.39 x 10 -4 Ω cm was obtained by 10% H 2 introduction without substrate heating during the deposition

  7. Electrical Switching in Thin Film Structures Based on Transition Metal Oxides

    Directory of Open Access Journals (Sweden)

    A. Pergament

    2015-01-01

    Full Text Available Electrical switching, manifesting itself in the nonlinear current-voltage characteristics with S- and N-type NDR (negative differential resistance, is inherent in a variety of materials, in particular, transition metal oxides. Although this phenomenon has been known for a long time, recent suggestions to use oxide-based switching elements as neuristor synapses and relaxation-oscillation circuit components have resumed the interest in this area. In the present review, we describe the experimental facts and theoretical models, mainly on the basis of the Mott transition in vanadium dioxide as a model object, of the switching effect with special emphasis on the emerging applied potentialities for oxide electronics.

  8. Electrical characterization of strontium titanate borosilicate glass ceramics system with bismuth oxide addition using impedance spectroscopy

    International Nuclear Information System (INIS)

    Thakur, O.P.; Kumar, Devendra; Parkash, Om; Pandey, Lakshman

    2003-01-01

    The ac electrical data, measured in the frequency range 0.1 kHz-1 MHz, were used to study the electrical response of strontium titanate borosilicate glass ceramic system with bismuth oxide addition. Complex plane plots from these electrical data for various glass ceramic samples reveal contributions from simultaneously operating polarization mechanisms to overall dielectric behavior. The complex modulus (M * ) representation of electrical data for various glass ceramic samples were found to be more informative. Equivalent circuit models, which represent the electrical behavior of glass ceramic samples, were determined using complex non-linear least square (CNLS) fitting. An attempt has been made to understand the dielectric behavior of various glass ceramics in terms of contributions arising from different polarization processes occurring at glassy matrix, crystalline phases, glass to crystal interface region and blocking electrodes. Glass ceramics containing SrTiO 3 and TiO 2 (rutile) phases show thermally stable dielectric behavior

  9. NRC Information No. 88-98: Electrical relay degradation caused by oxidation of contact surfaces

    International Nuclear Information System (INIS)

    Rossi, C.E.

    1992-01-01

    The NRC staff was recently informed by Clinton Power Station that a reactor scram on June 24, 1988, was caused by an electrical relay failure from oxide buildup on relay contact surfaces. Other information on relay failure from contact oxidation indicates that this problem may be more prevalent than previously thought. For example, a July 17, 1988, 10 CFR Part 21 report from Palo Verde, Unit 2, reported relay failures from contact oxidation that were due to the low current application of the relays. The relay contact surfaces in both of these examples are silver-nickel alloys, and both applications were for low current (i.e., milli-ampere current). Electrical relay contacts made of silver-nickel or silver-cadmium alloys will oxidize (tarnish) when used in low current applications because of the absence of contact surface sparking from the typical relay contact ''making and breaking'' functions. The sparking in the contact surfaces promotes a self-cleaning mechanism that reduces the tarnish buildup on the silver-nickel or silver-cadmium contacts. Discussions with one relay manufacturer revealed that the normal industry practice for low current circuit applications is either to use a contact surface material that will not oxidize or to compensate for the oxidation by increased maintenance activities to ensure reliability. The applied voltage may also influence contact oxidation

  10. Optical and electrical properties of Cu-based all oxide semi-transparent photodetector

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Hong-Sik; Patel, Malkeshkumar; Yadav, Pankaj; Kim, Joondong, E-mail: joonkim@inu.ac.kr, E-mail: dwkim@ewha.ac.kr [Photoelectric and Energy Device Application Lab (PEDAL) and Department of Electrical Engineering, Incheon National University, 119 Academy Rd., Yeonsu, Incheon 406772 (Korea, Republic of); Sohn, Ahrum; Kim, Dong-Wook, E-mail: joonkim@inu.ac.kr, E-mail: dwkim@ewha.ac.kr [Department of Physics, Ewha Womans University, Seoul 120750 (Korea, Republic of)

    2016-09-05

    Zero-bias operating Cu oxide-based photodetector was achieved by using large-scale available sputtering method. Cu oxide (Cu{sub 2}O or CuO) was used as p-type transparent layer to form a heterojunction by contacting n-type ZnO layer. All metal-oxide materials were employed to realize transparent device at room temperature and showed a high transparency (>75% at 600 nm) with excellent photoresponses. The structural, morphological, optical, and electrical properties of Cu oxides of CuO and Cu{sub 2}O are evaluated in depth by UV-visible spectrometer, X-ray diffraction, scanning electron microscopy, atomic force microscopy, Kelvin probe force microscopy, and Hall measurements. We may suggest a route of high-functional Cu oxide-based photoelectric devices for the applications in flexible and transparent electronics.

  11. Oxidation effects on the electric resistance of In and Al in thin layers

    International Nuclear Information System (INIS)

    Moncada, G.; Araya, J.; Clark, N.

    1981-01-01

    Measurements of electric resistance (R) in function of the time in evaporated samples of thin layers of In and Al trivalent elements in both vacuum and atmospheric pressure are reported. Measurements in samples at ambient and cooled with nitrogen temperatures taken place. The changes observed in R is attributed partly to changes in the sample surface produced by the oxidation. (L.C.) [pt

  12. Gaining electricity from in situ oxidation of hydrogen produced by fermentative cellulose degradation.

    Science.gov (United States)

    Niessen, J; Schröder, U; Harnisch, F; Scholz, F

    2005-01-01

    To exploit the fermentative hydrogen generation and direct hydrogen oxidation for the generation of electric current from the degradation of cellulose. Utilizing the metabolic activity of the mesophilic anaerobe Clostridium cellulolyticum and the thermophilic Clostridium thermocellum we show that electricity generation is possible from cellulose fermentation. The current generation is based on an in situ oxidation of microbially synthesized hydrogen at platinum-poly(tetrafluoroaniline) (Pt-PTFA) composite electrodes. Current densities of 130 mA l(-1) (with 3 g cellulose per litre medium) were achieved in poised potential experiments under batch and semi-batch conditions. The presented results show that electricity generation is possible by the in situ oxidation of hydrogen, product of the anaerobic degradation of cellulose by cellulolytic bacteria. For the first time, it is shown that an insoluble complex carbohydrate like cellulose can be used for electricity generation in a microbial fuel cell. The concept represents a first step to the utilization of macromolecular biomass components for microbial electricity generation.

  13. A radiation-electric-field combination principle for SO2-oxidation in Ar-mixtures

    International Nuclear Information System (INIS)

    Leonhardt, J.; Krueger, H.; Popp, P.; Boes, J.

    1981-01-01

    A simple model for a radiation-induced SO 2 -oxidation in Ar using SO 2 /O 2 /Ar-mixtures has been described by Leonhardt a.o. It is possible to improve the efficiency of the radiation-induced SO 2 -oxidation in such mixtures if the electrons produced by the ionizing radiation are accelerated by means of an electric field. The energy of the field-accelerated electrons must be high enough to form reactive SO 2 radicals but not high enough to ionize the gas mixture. Such an arrangement is described. The connection between the rate of SO 3 -formation and the electric field and the connection between SO 3 -formation and decreasing of the O 2 -concentration in the reaction chaimber were experimentally determined. Further the G-values attained by means of the radiation-electric-field combination are discussed. (author)

  14. Influence of the nanotube oxidation on the rheological and electrical properties of CNT/HDPE composites

    Energy Technology Data Exchange (ETDEWEB)

    Nobile, Maria Rossella, E-mail: mrnobile@unisa.it; Somma, Elvira; Valentino, Olga; Neitzert, Heinz-Christoph [Department of Industrial Engineering – DIIn - Università di Salerno Via Giovanni Paolo II, 132 - 84084 Fisciano (Italy); Simon, George [Department of Materials Engineering, Monash University, Clayton, Victoria 3800 (Australia)

    2016-05-18

    Rheological and electrical properties of nanocomposites based on multi-walled carbon nanotubes (MWNTs) and high density polyethylene (HDPE), prepared by melt mixing in a micro-twin screw extruder, have been investigated. The effect of MWNT concentration (0.5 and 2.5 wt %) and nanotube surface treatment (oxidative treatment in a tubular furnace at 500°C for 1 hr in a 95% nitrogen, 5% oxygen atmosphere) has been analyzed. It has been found that the sample conductivity with oxidation of the nanotubes decreases more than 2 orders of magnitude. Scanning electron microscopy showed good adhesion and dispersion of nanotubes in the matrix, independently of the surface treatment. Electrical and rheological measurements revealed that the oxidative treatment, causing some reduction of the MWNT quality, decreases the efficiency of the nanotube matrix interaction.

  15. Photoluminescence and electrical properties of silicon oxide and silicon nitride superlattices containing silicon nanocrystals

    International Nuclear Information System (INIS)

    Shuleiko, D V; Ilin, A S

    2016-01-01

    Photoluminescence and electrical properties of superlattices with thin (1 to 5 nm) alternating silicon-rich silicon oxide or silicon-rich silicon nitride, and silicon oxide or silicon nitride layers containing silicon nanocrystals prepared by plasma-enhanced chemical vapor deposition with subsequent annealing were investigated. The entirely silicon oxide based superlattices demonstrated photoluminescence peak shift due to quantum confinement effect. Electrical measurements showed the hysteresis effect in the vicinity of zero voltage due to structural features of the superlattices from SiOa 93 /Si 3 N 4 and SiN 0 . 8 /Si 3 N 4 layers. The entirely silicon nitride based samples demonstrated resistive switching effect, comprising an abrupt conductivity change at about 5 to 6 V with current-voltage characteristic hysteresis. The samples also demonstrated efficient photoluminescence with maximum at ∼1.4 eV, due to exiton recombination in silicon nanocrystals. (paper)

  16. Quantum eraser and the decoherence time of a local measurement process

    International Nuclear Information System (INIS)

    Abranyos, Y.; Jakob, M.; Bergou, J.

    1998-01-01

    We propose an implementation of the quantum eraser, based on a recent experimental scheme by Eichmann et al. involving two four-level atoms. In our version a continuous broad band excitation field drives the two trapped atoms and information about which atom scattered the light is stored in the internal degrees of freedom of the atoms. Entanglement of the two atoms after the detection of the photon is intimately connected to the availability of this 'which path' information. We also show that the quantum eraser can be used to measure the decoherence time of a local measurement process. (author)

  17. TiFeCoNi oxide thin film - A new composition with extremely low electrical resistivity at room temperature

    International Nuclear Information System (INIS)

    Yang, Ya-Chu; Tsau, Chun-Huei; Yeh, Jien-Wei

    2011-01-01

    We show the electrical resistivity of a TiFeCoNi oxide thin film. The electrical resistivity of the TiFeCoNi thin film decreased sharply after a suitable period of oxidation at high temperature. The lowest resistivity of the TiFeCoNi oxide film was 35 ± 3 μΩ-cm. The low electrical resistivity of the TiFeCoNi oxide thin film was attributed to Ti, which is more reactive than the other elements, reacting with oxygen at the initial stage of annealing. The low resistivity is caused by the remaining electrons.

  18. Studies on Optical and Electrical Properties of Hafnium Oxide Nanoparticles

    Science.gov (United States)

    Jayaraman, Venkatachalam; Sagadevan, Suresh; Sudhakar, Rajesh

    2017-07-01

    In this paper, the synthesis and physico-chemical properties of hafnium oxide nanoparticles (HfO2 NPs) are analyzed and reported. The synthesis was carried out by the precipitation route by using hafnium tetrachloride (HfCl4) as precursor material with potassium hydroxide (KOH) dissolved in Millipore water. In the precipitation technique, the chemical reaction is comparatively simple, low-cost and non-toxic compared to other synthetic methods. The synthesized HfO2 NPs were characterized by using powder x-ray diffraction (PXRD), ultraviolet-visible (UV-Vis) spectroscopy, Raman analysis, and high-resolution transmission electron microscopy (HRTEM). The monoclinic structure of the HfO2 NPs was resolved utilizing x-ray diffraction (XRD). The optical properties were studied from the UV-Vis absorption spectrum. The optical band gap of the HfO2NPs was observed to be 5.1 eV. The Raman spectrum shows the presence of HfO2 NPs. The HRTEM image showed that the HfO2 NPs were of spherical shape with an average particle size of around 28 nm. The energy-dispersive x-ray spectroscopy (EDS) spectrum obviously demonstrated the presence of HfO2 NPs. Analysis and studies on the dielectric properties of the HfO2 NPs such as the dielectric constant, the dielectric loss, and alternating current (AC) conductivity were carried out at varying frequencies and temperatures.

  19. Radiation effects on the electrical properties of hafnium oxide based MOS capacitors.

    Energy Technology Data Exchange (ETDEWEB)

    Petrosky, J. C. (Air Force Institute of Technology, Wright-Patterson Air Force Base, OH); McClory, J. W. (Air Force Institute of Technology, Wright-Patterson Air Force Base, OH); Bielejec, Edward Salvador; Foster, J. C. (Air Force Institute of Technology, Wright-Patterson Air Force Base, OH)

    2010-10-01

    Hafnium oxide-based MOS capacitors were investigated to determine electrical property response to radiation environments. In situ capacitance versus voltage measurements were analyzed to identify voltage shifting as a result of changes to trapped charge with increasing dose of gamma, neutron, and ion radiation. In situ measurements required investigation and optimization of capacitor fabrication to include dicing, cleaning, metalization, packaging, and wire bonding. A top metal contact of 200 angstroms of titanium followed by 2800 angstroms of gold allowed for repeatable wire bonding and proper electrical response. Gamma and ion irradiations of atomic layer deposited hafnium oxide on silicon devices both resulted in a midgap voltage shift of no more than 0.2 V toward less positive voltages. This shift indicates recombination of radiation induced positive charge with negative trapped charge in the bulk oxide. Silicon ion irradiation caused interface effects in addition to oxide trap effects that resulted in a flatband voltage shift of approximately 0.6 V also toward less positive voltages. Additionally, no bias dependent voltage shifts with gamma irradiation and strong oxide capacitance room temperature annealing after ion irradiation was observed. These characteristics, in addition to the small voltage shifts observed, demonstrate the radiation hardness of hafnium oxide and its applicability for use in space systems.

  20. Rapid growth of zinc oxide nanobars in presence of electric field by physical vapor deposition

    Science.gov (United States)

    Jouya, Mehraban; Taromian, Fahime; Siami, Simin

    2017-12-01

    In this contribution, electric field has some effects to increase growth for specific time duration on zinc oxide (ZnO) nanobars. First, the zinc (Zn) thin film has been prepared by 235,000 V/m electric field assisted physical vapor deposition (PVD) at vacuum of 1.33 × 10-5 mbar. Second, strong electric field of 134,000 V/m has been used in ambient for growing ZnO nanobars in term of the time include 2.5 and 10 h. The performances of the ZnO nanostructure in absence and presence of electric field have been determined by scanning electron microscopy (SEM) and X-ray diffraction (XRD). The results of XRD analysis showed that ZnO has a hexagonal bars structure and a strongly preferred (101) orientation which is strongest than without applying electric field. SEM analysis revealed that physical vapored ZnO thin film in presence of electric field are densely packed with uniform morphological, thinner and denser in distribution. Electric field effect for ZnO growth in 2.5 h is better than it in the 2.5 h without electric field but by passing the time the media influence has good power almost as same as electric field. Through this electric field in PVD, the compact and uniform Zn film has been achieved which is less diameter than ordinary PVD method. Finally, we carry out a series of experiments to grow different-orientation ZnO nanobars with less than 100 nm in diameter, which are the time saving process in base of PVD ever reported. Therefore, the significant conclusion in usage electric field is reducing time of growth.

  1. Effect of Co deposition on oxidation behavior and electrical properties of ferritic steel for solid oxide fuel cell interconnects

    Energy Technology Data Exchange (ETDEWEB)

    Kruk, A.; Adamczyk, A.; Gil, A. [AGH University of Science and Technology, Faculty of Materials Science and Ceramics, al. Mickiewicza 30, 30-059 Krakow (Poland); Kąc, S. [AGH University of Science and Technology, Faculty of Metals Engineering and Industrial Computer Science, al. Mickiewicza 30, 30-059 Krakow (Poland); Dąbek, J.; Ziąbka, M. [AGH University of Science and Technology, Faculty of Materials Science and Ceramics, al. Mickiewicza 30, 30-059 Krakow (Poland); Brylewski, T., E-mail: brylew@agh.edu.pl [AGH University of Science and Technology, Faculty of Materials Science and Ceramics, al. Mickiewicza 30, 30-059 Krakow (Poland)

    2015-09-01

    In this work, a Co layer deposited on DIN 50049 steel by means of pulsed laser deposition was applied for the protection of solid oxide fuel cell (SOFC) interconnects operating on the cathode side. The coated and uncoated steel samples were oxidized in air at 1073 K for 500 h, and their microstructures as well as electrical resistances were evaluated using X-ray diffraction, atomic force microscopy, scanning electron microscopy coupled with energy-dispersive X-ray spectroscopy, and the 2-probe 4-point direct current method. It was demonstrated that the Co coating had reduced the oxidation rate of the steel by nearly a half. The area-specific resistance value of the coated steel was 5 × 10{sup −6} Ω·m{sup 2}, which was significantly lower than that of bare steel after 350 h of oxidation at 1073 K. Cr vaporization tests showed that the Co coating was efficient at blocking the outward diffusion of Cr. The obtained results prove that steel coated with a thin film of cobalt was suitable for use as metallic interconnect material in SOFCs operating at intermediate temperatures. - Highlights: • Co layer was deposited on ferritic steel by means of pulsed laser deposition. • Coated and bare ferritic steel samples were exposed to air at 1073 K for 500 h. • Scale growth rate on bare steel is higher than that on coated steel. • Electrical resistance for oxidized coated steel was lower than for bare steel. • Co-coated steel effectively reduced the formation of volatile Cr species.

  2. Oxidation behaviour and electrical properties of cobalt/cerium oxide composite coatings for solid oxide fuel cell interconnects

    DEFF Research Database (Denmark)

    Harthøj, Anders; Holt, Tobias; Møller, Per

    2015-01-01

    This work evaluates the performance of cobalt/cerium oxide (Co/CeO2) composite coatings and pure Co coatings to be used for solid oxide fuel cell (SOFC) interconnects. The coatings are electroplated on the ferritic stainless steels Crofer 22 APU and Crofer 22H. Coated and uncoated samples...

  3. Physical and electrical properties of thermal oxidized Sm{sub 2}O{sub 3} gate oxide thin film on Si substrate: Influence of oxidation durations

    Energy Technology Data Exchange (ETDEWEB)

    Goh, Kian Heng; Haseeb, A.S.M.A.; Wong, Yew Hoong, E-mail: yhwong@um.edu.my

    2016-05-01

    Growth of 150 nm Sm{sub 2}O{sub 3} films by sputtered pure samarium metal film on silicon substrates and followed by thermal oxidation process in oxygen ambient at 700 °C through various oxidation durations (5 min, 10 min, 15 min and 20 min) has been carried out. The crystallinity of Sm{sub 2}O{sub 3} film and existence of interfacial layer have been evaluated by X-ray diffraction, Fourier transform infrared and Raman analysis. Crystallite size and microstrain of Sm{sub 2}O{sub 3} were estimated by Williamson–Hall plot analysis. Calculated crystallite size of Sm{sub 2}O{sub 3} from Scherrer equation has similar trend with the value from Williamson–Hall plot. The presence of interfacial layer is supported by composition line scan by energy dispersive X-ray spectroscopy analysis. The surface roughness and surface topography of Sm{sub 2}O{sub 3} film were examined by atomic force microscopy analysis. The electrical characterization revealed that 15 min of oxidation durations with smoothest surface has highest breakdown voltage, lowest leakage current density and highest barrier height value. - Highlights: • Thermal oxidation of sputtered pure metallic Sm in oxygen ambient • Formation of polycrystalline Sm{sub 2}O{sub 3} and semi-polycrystalline interfacial layers • Optimization of oxidation duration of pure metallic Sm in oxygen ambient • Enhanced electrical performance with smooth surface and increased barrier height.

  4. Processing and properties of silver-metal oxide electrical contact materials

    Directory of Open Access Journals (Sweden)

    Nadežda M. Talijan

    2012-12-01

    Full Text Available The presented study gives a brief overview of the experimental results of investigations of different production technologies of silver-metal oxide electrical contact materials in relation: processing method - properties. The two most common routes of production, i.e. internal oxidation/ingot metallurgy and powder metallurgy are demonstrated on the example of Ag-CdO and Ag-ZnO materials. For illustration of alternative processing routes that provide higher dispersion of metal-oxide particles in silver matrix more environmentally friendly Ag-SnO2 contact materials are used. Processing of electrical contact materials by mechanical mixing of starting powders in high energy ball mill is presented. The obtained experimental results of application of different methods of introduction of SnO2 nanoparticles in the silver matrix such as conventional powder metallurgy mixing and template method are given and discussed in terms of their influence on microstructure and physical properties (density, hardness and electrical conductivity of the prepared Ag-SnO2 electrical contact materials.

  5. Effect of recoiled O on damage regrowth and electrical properties of through-oxide implanted Si

    International Nuclear Information System (INIS)

    Sadana, D.K.; Wu, N.R.; Washburn, J.; Current, M.; Morgan, A.; Reed, D.; Maenpaa, M.

    1982-10-01

    High dose (4 to 7.5 x 10 15 cm -2 ) As implantations into p-type (100) Si have been carried out through a screen-oxide of thicknesses less than or equal to 775A and without screen oxide. The effect of recoiled O on damage annealing and electrical properties of the implanted layers has been investigated using a combination of the following techniques: TEM, RBS/MeV He + channeling, SIMS and Hall measurements in conjunction with chemical stripping and sheet resistivity measurements. The TEM results show that there is a dramatically different annealing behavior of the implantation damage for the through oxide implants (Case I) as compared to implants into bare silicon (Case II). Comparison of the structural defect profiles with O distributions obtained by SIMS demonstrated that retardation in the secondary damage growth in Case I can be directly related with the presence of O. Weak-beam TEM showed that a high density of fine defect clusters (less than or equal to 50A) were present both in Case I and Case II. The electrical profiles showed only 30% of the total As to be electrically active. The structural and electrical results have been explained by a model that entails As-O, Si-O and As-As complex formation and their interaction with the dislocations

  6. Electrical characterization of reduced graphene oxide (rGO) on organic thin film transistor (OTFT)

    Science.gov (United States)

    Musa, Nurhazwani; Halim, Nurul Farhanah Ab.; Ahmad, Mohd Noor; Zakaria, Zulkhairi; Hashim, Uda

    2017-03-01

    A green method and eco-friendly solution were used to chemically reduce graphene oxide (GO) to graphene using green reductant. In this study, graphene oxide (GO) were prepared by using Tours method. Then, reduced graphene oxides (rGO) were prepared by using three typical reduction agents: L-ascorbic acid (L-AA), formamidinesulfinic acid (FAS) and sodium sulfite (Na2SO3). The reduced materials were characterized by Fourier transform infrared spectroscopy (FTIR), Thermo gravimetric analysis (TGA) and X-ray diffraction (XRD). Graphene based organic thin film transistor (G-OTFT) was prepared by a spin coating and thermal evaporation technique. The electrical characterization of G-OTFT was analyzed by using semiconductor parameter analyzer (SPA). The G-OTFT devices show p-type semiconducting behaviour. This article focuses on the synthesis and reduction of graphene oxide using three different reductants in order to maximise its electrical conductivity. The rGO product demonstrated a good electrical conductivity performance with highly sensitivity sensor.

  7. Electric radiation mapping of silver/zinc oxide nanoantennas by using electron holography

    Energy Technology Data Exchange (ETDEWEB)

    Sanchez, J. E.; Mendoza-Santoyo, F.; Cantu-Valle, J.; Velazquez-Salazar, J.; José Yacaman, M.; Ponce, A. [Department of Physics and Astronomy, University of Texas at San Antonio, San Antonio 78249 (United States); González, F. J. [Coordinación para la Innovación y la Aplicación de la Ciencia y la Tecnología, Universidad Autónoma de San Luís Potosí, San Luis Potosí 78210 (Mexico); Diaz de Leon, R. [Instituto Tecnológico de San Luis Potosí, San Luis Potosi 78437 (Mexico)

    2015-01-21

    In this work, we report the fabrication of self-assembled zinc oxide nanorods grown on pentagonal faces of silver nanowires by using microwaves irradiation. The nanostructures resemble a hierarchal nanoantenna and were used to study the far and near field electrical metal-semiconductor behavior from the electrical radiation pattern resulting from the phase map reconstruction obtained using off-axis electron holography. As a comparison, we use electric numerical approximations methods for a finite number of ZnO nanorods on the Ag nanowires and show that the electric radiation intensities maps match closely the experimental results obtained with electron holography. The time evolution of the radiation pattern as generated from the nanostructure was recorded under in-situ radio frequency signal stimulation, in which the generated electrical source amplitude and frequency were varied from 0 to 5 V and from 1 to 10 MHz, respectively. The phase maps obtained from electron holography show the change in the distribution of the electric radiation pattern for individual nanoantennas. The mapping of this electrical behavior is of the utmost importance to gain a complete understanding for the metal-semiconductor (Ag/ZnO) heterojunction that will help to show the mechanism through which these receiving/transmitting structures behave at nanoscale level.

  8. Color Image Secret Watermarking Erase and Write Algorithm Based on SIFT

    Science.gov (United States)

    Qu, Jubao

    The use of adaptive characteristics of SIFT, image features, the implementation of the write, erase operations on Extraction and color image hidden watermarking. From the experimental results, this algorithm has better imperceptibility and at the same time, is robust against geometric attacks and common signal processing.

  9. Different types of inks having certain medicolegal importance: Deciphering the faded and physically erased handwriting

    Directory of Open Access Journals (Sweden)

    Manal Abd-ElAziz Abd-ElZaher

    2014-06-01

    Full Text Available Disappearing ink is a type of ink which could be used to forge documents as it will fade away without any trace within 40–65 h. Erasable ink is another type of ink easily removed by certain rubbers incorporated in each pen. Both types of inks were applied separately on different types of papers (checks, standard white foolscap, and plain white A4 paper. For vanishing ink, it was observed visually in the first 6 h and then every 6 h. It was found that the vanishing ink disappeared completely within 2 h on checks, 36 h on standard white foolscap paper, and 40 h on plain white A4 paper. For erasable ink, the written strokes were manipulated manually using the incorporated eraser. Deciphering the faded writing failed by the conventional methods, but oblique light can reveal the indentation marks. The faded writing became visible when treated with weak alkaline (NaOH solutions. Erasable ink was deciphered with the aid of infra-red radiation combined with VSC-6000 as clear white traces against red fluorescence. It was concluded that the use of a weak (NaOH solution is an effective method for revealing the faded writing, and the infra-red illumination is also effective.

  10. Beyond extinction: erasing human fear responses and preventing the return of fear

    NARCIS (Netherlands)

    Kindt, M.; Soeter, M.; Vervliet, B.

    2009-01-01

    Animal studies have shown that fear memories can change when recalled, a process referred to as reconsolidation. We found that oral administration of the beta-adrenergic receptor antagonist propranolol before memory reactivation in humans erased the behavioral expression of the fear memory 24 h

  11. An investigation on high-temperature electrical transport properties of graphene-oxide nano-thinfilms

    International Nuclear Information System (INIS)

    Venugopal, Gunasekaran; Krishnamoorthy, Karthikeyan; Kim, Sang-Jae

    2013-01-01

    High-temperature electrical transport properties are investigated for graphene-oxide nano thinfilms. The graphene-oxide nanoparticles are synthesized by modified Hummers method and characterized by UV–vis, Raman and X-ray diffraction techniques. The surface morphology of graphene-oxide film is analyzed using scanning electron and atomic force microscopy. The experimental results on high-temperature electrical studies of thinfilms exhibit metallic behavior followed by three-dimensional variable range hopping mechanism. The current–voltage characteristics at various temperatures (from 293 K to 573 K) were investigated. The effect of high-temperature on the functional groups of graphene-oxide film is evidently examined using X-ray photoelectron, thermal gravimetric analysis and Fourier transform infra-red spectroscopy. Transistor characteristics were performed after heat treatment resulting ambipolar behavior with holes and electron mobility of 127 and 66.9 cm 2 V −1 s −1 respectively. Our results are comparable to reduced graphene-oxide, indicating the advantage of our approach requires no further reduction to develop graphene-based transparent and conductive electrodes for dye-sensitized solar cells and ultra-capacitor applications.

  12. Electrical behavior of amide functionalized graphene oxide and graphene oxide films annealed at different temperatures

    International Nuclear Information System (INIS)

    Rani, Sumita; Kumar, Mukesh; Kumar, Dinesh; Sharma, Sumit

    2015-01-01

    Films of graphene oxide (GO) and amide functionalized graphene oxides (AGOs) were deposited on SiO 2 /Si(100) by spin coating and were thermally annealed at different temperatures. Sheet resistance of GO and AGOs films was measured using four probe resistivity method. GO an insulator at room temperature, exhibits decrease in sheet resistance with increase in annealing temperature. However, AGOs' low sheet resistance (250.43 Ω) at room temperature further decreases to 39.26 Ω after annealing at 800 °C. It was observed that the sheet resistance of GO was more than AGOs up to 700 °C, but effect was reversed after annealing at higher temperature. At higher annealing temperatures the oxygen functionality reduces in GO and sheet resistance decreases. Sheet resistance was found to be annealing time dependent. Longer duration of annealing at a particular temperature results in decrease of sheet resistance. - Highlights: • Amide functionalized graphene oxides (AGOs) were synthesized at room temperature (RT). • AGO films have low sheet resistance at RT as compared to graphene oxide (GO). • Fast decrease in the sheet resistance of GO with annealing as compared to AGOs • AGOs were found to be highly dispersible in polar solvents

  13. Electric terminal performance and characterization of solid oxide fuel cells and systems

    Science.gov (United States)

    Lindahl, Peter Allan

    Solid Oxide Fuel Cells (SOFCs) are electrochemical devices which can effect efficient, clean, and quiet conversion of chemical to electrical energy. In contrast to conventional electricity generation systems which feature multiple discrete energy conversion processes, SOFCs are direct energy conversion devices. That is, they feature a fully integrated chemical to electrical energy conversion process where the electric load demanded of the cell intrinsically drives the electrochemical reactions and associated processes internal to the cell. As a result, the cell's electric terminals provide a path for interaction between load side electric demand and the conversion side processes. The implication of this is twofold. First, the magnitude and dynamic characteristics of the electric load demanded of the cell can directly impact the long-term efficacy of the cell's chemical to electrical energy conversion. Second, the electric terminal response to dynamic loads can be exploited for monitoring the cell's conversion side processes and used in diagnostic analysis and degradation-mitigating control schemes. This dissertation presents a multi-tier investigation into this electric terminal based performance characterization of SOFCs through the development of novel test systems, analysis techniques and control schemes. First, a reference-based simulation system is introduced. This system scales up the electric terminal performance of a prototype SOFC system, e.g. a single fuel cell, to that of a full power-level stack. This allows realistic stack/load interaction studies while maintaining explicit ability for post-test analysis of the prototype system. Next, a time-domain least squares fitting method for electrochemical impedance spectroscopy (EIS) is developed for reduced-time monitoring of the electrochemical and physicochemical mechanics of the fuel cell through its electric terminals. The utility of the reference-based simulator and the EIS technique are demonstrated

  14. Electrical conductivity of activated carbon-metal oxide nanocomposites under compression: a comparison study.

    Science.gov (United States)

    Barroso-Bogeat, A; Alexandre-Franco, M; Fernández-González, C; Macías-García, A; Gómez-Serrano, V

    2014-12-07

    From a granular commercial activated carbon (AC) and six metal oxide (Al2O3, Fe2O3, SnO2, TiO2, WO3 and ZnO) precursors, two series of AC-metal oxide nanocomposites were prepared by wet impregnation, oven-drying at 120 °C, and subsequent heat treatment at 200 or 850 °C in an inert atmosphere. Here, the electrical conductivity of the resulting products was studied under moderate compression. The influence of the applied pressure, sample volume, mechanical work, and density of the hybrid materials was thoroughly investigated. The DC electrical conductivity of the compressed samples was measured at room temperature by the four-probe method. Compaction assays suggest that the mechanical properties of the nanocomposites are largely determined by the carbon matrix. Both the decrease in volume and the increase in density were relatively small and only significant at pressures lower than 100 kPa for AC and most nanocomposites. In contrast, the bulk electrical conductivity of the hybrid materials was strongly influenced by the intrinsic conductivity, mean crystallite size, content and chemical nature of the supported phases, which ultimately depend on the metal oxide precursor and heat treatment temperature. The supported nanoparticles may be considered to act as electrical switches either hindering or favouring the effective electron transport between the AC cores of neighbouring composite particles in contact under compression. Conductivity values as a rule were lower for the nanocomposites than for the raw AC, all of them falling in the range of semiconductor materials. With the increase in heat treatment temperature, the trend is toward the improvement of conductivity due to the increase in the crystallite size and, in some cases, to the formation of metals in the elemental state and even metal carbides. The patterns of variation of the electrical conductivity with pressure and mechanical work were slightly similar, thus suggesting the predominance of the pressure

  15. Oxidant enhancement in martian dust devils and storms: storm electric fields and electron dissociative attachment.

    Science.gov (United States)

    Delory, Gregory T; Farrell, William M; Atreya, Sushil K; Renno, Nilton O; Wong, Ah-San; Cummer, Steven A; Sentman, Davis D; Marshall, John R; Rafkin, Scot C R; Catling, David C

    2006-06-01

    Laboratory studies, numerical simulations, and desert field tests indicate that aeolian dust transport can generate atmospheric electricity via contact electrification or "triboelectricity." In convective structures such as dust devils and dust storms, grain stratification leads to macroscopic charge separations and gives rise to an overall electric dipole moment in the aeolian feature, similar in nature to the dipolar electric field generated in terrestrial thunderstorms. Previous numerical simulations indicate that these storm electric fields on Mars can approach the ambient breakdown field strength of approximately 25 kV/m. In terrestrial dust phenomena, potentials ranging from approximately 20 to 160 kV/m have been directly measured. The large electrostatic fields predicted in martian dust devils and storms can energize electrons in the low pressure martian atmosphere to values exceeding the electron dissociative attachment energy of both CO2 and H2O, which results in the formation of the new chemical products CO/O- and OH/H-, respectively. Using a collisional plasma physics model, we present calculations of the CO/O- and OH/H- reaction and production rates. We demonstrate that these rates vary geometrically with the ambient electric field, with substantial production of dissociative products when fields approach the breakdown value of approximately 25 kV/m. The dissociation of H2O into OH/H- provides a key ingredient for the generation of oxidants; thus electrically charged dust may significantly impact the habitability of Mars.

  16. Structure, temperature and frequency dependent electrical conductivity of oxidized and reduced electrochemically exfoliated graphite

    Science.gov (United States)

    Radoń, Adrian; Włodarczyk, Patryk; Łukowiec, Dariusz

    2018-05-01

    The article presents the influence of reduction by hydrogen in statu nascendi and modification by hydrogen peroxide on the structure and electrical conductivity of electrochemically exfoliated graphite. It was confirmed that the electrochemical exfoliation can be used to produce oxidized nanographite with an average number of 25 graphene layers. The modified electrochemical exfoliated graphite and reduced electrochemical exfoliated graphite were characterized by high thermal stability, what was associated with removing of labile oxygen-containing groups. The presence of oxygen-containing groups was confirmed using Fourier-transform infrared spectroscopy. Influence of chemical modification by hydrogen and hydrogen peroxide on the electrical conductivity was determined in wide frequency (0.1 Hz-10 kHz) and temperature range (-50 °C-100 °C). Material modified by hydrogen peroxide (0.29 mS/cm at 0 °C) had the lowest electrical conductivity. This can be associated with oxidation of unstable functional groups and was also confirmed by analysis of Raman spectra. The removal of oxygen-containing functional groups by hydrogen in statu nascendi resulted in a 1000-fold increase in the electrical conductivity compared to the electrochemical exfoliated graphite.

  17. Prediction of crack density and electrical resistance changes in indium tin oxide/polymer thin films under tensile loading

    KAUST Repository

    Mora Cordova, Angel; Khan, Kamran; El Sayed, Tamer

    2014-01-01

    We present unified predictions for the crack onset strain, evolution of crack density, and changes in electrical resistance in indium tin oxide/polymer thin films under tensile loading. We propose a damage mechanics model to quantify and predict

  18. Effect of Samarium Oxide on the Electrical Conductivity of Plasma-Sprayed SOFC Anodes

    Science.gov (United States)

    Panahi, S. N.; Samadi, H.; Nemati, A.

    2016-10-01

    Solid oxide fuel cells (SOFCs) are rapidly becoming recognized as a new alternative to traditional energy conversion systems because of their high energy efficiency. From an ecological perspective, this environmentally friendly technology, which produces clean energy, is likely to be implemented more frequently in the future. However, the current SOFC technology still cannot meet the demands of commercial applications due to temperature constraints and high cost. To develop a marketable SOFC, suppliers have tended to reduce the operating temperatures by a few hundred degrees. The overall trend for SOFC materials is to reduce their service temperature of electrolyte. Meanwhile, it is important that the other components perform at the same temperature. Currently, the anodes of SOFCs are being studied in depth. Research has indicated that anodes based on a perovskite structure are a more promising candidate in SOFCs than the traditional system because they possess more favorable electrical properties. Among the perovskite-type oxides, SrTiO3 is one of the most promising compositions, with studies demonstrating that SrTiO3 exhibits particularly favorable electrical properties in contrast with other perovskite-type oxides. The main purpose of this article is to describe our study of the effect of rare-earth dopants with a perovskite structure on the electrical behavior of anodes in SOFCs. Sm2O3-doped SrTiO3 synthesized by a solid-state reaction was coated on substrate by atmospheric plasma spray. To compare the effect of the dopant on the electrical conductivity of strontium titanate, different concentrations of Sm2O3 were used. The samples were then investigated by x-ray diffraction, four-point probe at various temperatures (to determine the electrical conductivity), and a scanning electron microscope. The study showed that at room temperature, nondoped samples have a higher electrical resistance than doped samples. As the temperature was increased, the electrical

  19. Electric-Loading Enhanced Kinetics in Oxide Ceramics: Pore Migration, Sintering and Grain Growth: Final Report

    Energy Technology Data Exchange (ETDEWEB)

    Chen, I-Wei [Univ. of Pennsylvania, Philadelphia, PA (United States). Dept. of Materials Science & Engineering

    2018-02-02

    Solid oxide fuel cells and solid oxide electrolysis cells rely on solid electrolytes in which a large ionic current dominates. This project was initiated to investigate microstructural changes in such devices under electrochemical forces, because nominally insignificant processes may couple to the large ionic current to yield non-equilibrium phenomena that alter the microstructure. Our studies had focused on yttria-stabilized cubic zirconia (YSZ) widely used in these devices. The experiments have revealed enhanced grain growth at higher temperatures, pore and gas bubble migration at all temperatures, and the latter also lead to enhanced sintering of highly porous ceramics into fully dense ceramics at unprecedentedly low temperatures. These results have shed light on kinetic processes that fall completely outside the realm of classical ceramic processing. Other fast-oxygen oxide ceramics closely related to, and often used in conjunction with zirconia ceramics, have also be investigated, as are closely related scientific problems in zirconia ceramics. These include crystal structures, defects, diffusion kinetics, oxygen potentials, low temperature sintering, flash sintering, and coarsening theory, and all have resulted in greater clarity in scientific understanding. The knowledge is leveraged to provide new insight to electrode kinetics and near-electrode mixed conductivity and to new materials. In the following areas, our research has resulted in completely new knowledge that defines the state-of-the-art of the field. (a) Electrical current driven non-equilibrium phenomena, (b) Enhanced grain growth under electrochemically reducing conditions, (c) Development of oxygen potential polarization in electrically loaded electrolyte, (d) Low temperature sintering and grain growth, and (e) Structure, defects and cation kinetics of fluorite-structured oxides. Our research has also contributed to synthesis of new energy-relevant electrochemical materials and new understanding

  20. Action Movie in Election Day: Eraser (1996, Arnold Chwarzenegger and Other Politics Medias

    Directory of Open Access Journals (Sweden)

    Fabro Boaz Steibel

    2008-08-01

    Full Text Available This article aims to explore methodological frontiers between movie theory and political ommunication studies. When identifying traces of how politics, art and entertainment interact, it is possible to understand how movie celebrities can act as politicians, and vice versa. Arnold Schwarzenegger is a world famous actor who has twice won the Californian gubernatorial election. The principal purpose of this article is not to discuss political spectacle or analyse Schwarzenegger’s approach to government. The idea is to understand how a film in which Schwarzenegger starred over a decade ago (Eraser, 1996 has influenced his campaign image construction. The article’s methodological basis is a collective text by the Editors of Cahiers du Cinéma, based on John Ford’s Young Mr. Lincoln (1939. Its methodology allows us to observe important characteristics of Schwarzenegger’s role in the Eraser movie, which are then compared to the 2002 election scenario.

  1. Spectroscopic and electrical sensing mechanism in oxidant-mediated polypyrrole nanofibers/nanoparticles for ammonia gas

    International Nuclear Information System (INIS)

    Ishpal; Kaur, Amarjeet

    2013-01-01

    Ammonia gas sensing mechanism in oxidant-mediated polypyrrole (PPy) nanofibers/nanoparticles has been studied through spectroscopic and electrical investigations. PPy nanofibers/nanoparticles have been synthesized by chemical oxidation method in the presence of various oxidizing agents such as ammonium persulfate (APS), potassium persulfate (PPS), vanadium pentoxide (V 2 O 5 ), and iron chloride (FeCl 3 ). Scanning electron microscopy study revealed that PPy nanofibers of about 63, 71 and 79 nm diameters were formed in the presence of APS, PPS, V 2 O 5 , respectively, while PPy nanoparticles of about 100–110 nm size were obtained in the presence of FeCl 3 as an oxidant. The structural investigations and confirmation of synthesis of PPy were established through Fourier transform infrared and Raman spectroscopy. The gas sensing behavior of the prepared PPy samples is investigated by measuring the electrical resistance in ammonia environment. The observed gas sensing response (ΔR/Rx100) at 100 ppm level of ammonia is ∼4.5 and 18 % for the samples prepared with oxidizing agents FeCl 3 and APS, respectively, and by changing the ammonia level from 50 to 300 ppm, the sensing response varies from ∼4.5 to 11 % and ∼10 to 39 %, respectively. Out of all four samples, the PPy nanofibers prepared in the presence of APS have shown the best sensing response. The mechanism of gas sensing response of the PPy samples has been investigated through Raman spectroscopy study. The decrease of charge carrier concentration through reduction of polymeric chains has been recognized through Raman spectroscopic measurements recorded in ammonia environment.

  2. Structural, electrical and optical studies of SILAR deposited cadmium oxide thin films: Annealing effect

    International Nuclear Information System (INIS)

    Salunkhe, R.R.; Dhawale, D.S.; Gujar, T.P.; Lokhande, C.D.

    2009-01-01

    Successive ionic layer adsorption and reaction (SILAR) method has been successfully employed for the deposition of cadmium oxide (CdO) thin films. The films were annealed at 623 K for 2 h in an air and changes in the structural, electrical and optical properties were studied. From the X-ray diffraction patterns, it was found that after annealing, H 2 O vapors from as-deposited Cd(O 2 ) 0.88 (OH) 0.24 were removed and pure cubic cadmium oxide was obtained. The as-deposited film consists of nanocrystalline grains of average diameter about 20-30 nm with uniform coverage of the substrate surface, whereas for the annealed film randomly oriented morphology with slight increase in the crystallite size has been observed. The electrical resistivity showed the semiconducting nature with room temperature electrical resistivity decreased from 10 -2 to 10 -3 Ω cm after annealing. The decrease in the band gap energy from 3.3 to 2.7 eV was observed after the annealing

  3. Effect of rapid oxidation on optical and electrical properties of silicon nanowires obtained by chemical etching

    Science.gov (United States)

    Karyaoui, M.; Bardaoui, A.; Ben Rabha, M.; Harmand, J. C.; Amlouk, M.

    2012-05-01

    In the present work, we report the investigation of passivated silicon nanowires (SiNWs) having an average radius of 3.7 μm, obtained by chemical etching of p-type silicon (p-Si). The surface passivation of the SiNWs was performed through a rapid oxidation conducted under a controlled atmosphere at different temperatures and durations. The morphology of the SiNWs was examined using a scanning electron microscope (SEM) that revealed a wave-like structure of dense and vertically aligned one-dimensional silicon nanostructures. On the other hand, optical and electrical characterizations of the SiNWs were studied using a UV-Vis-NIR spectrometer, the Fourier transform infrared spectroscopy (FTIR) and I-V measurements. The reflectance of SiNWs has been dropped to approximately 2% in comparison to that of bare p-Si. This low reflectance slightly increased after carrying out the rapid thermal annealing. The observed behavior was attributed to the formation of a SiO2 layer, as confirmed by FTIR measurements. Finally, the electrical measurements have shown that the rapid oxidation, at certain conditions, contributes to the improvement of the electrical responses of the SiNWs, which can be of great interest for photovoltaic applications.

  4. Potential oxidative stress in the bodies of electric arc welding operators: effect of photochemical smog.

    Science.gov (United States)

    Zhu, You-Gen; Zhou, Jun-Fu; Shan, Wei-Ying; Zhou, Pei-Su; Tong, Gui-Zhong

    2004-12-01

    To investigate whether photochemical smog emitted during the process of electric arc welding might cause oxidative stress and potential oxidative damage in the bodies of welding operators. Seventy electric arc welding operators (WOs) and 70 healthy volunteers (HVs) were enrolled in a randomized controlled study design, in which the levels of vitamin C (VC) and vitamin E (VE) in plasma as well as the activities of superoxide dismutase (SOD), catalase (CAT) and glutathione peroxidase (GPX), and the level of lipoperoxide (LPO) in erythrocytes were determined by spectrophotometry. Compared with the average values of the above experimental parameters in the HVs group, the average values of VC and VE in plasma as well as those of SOD, CAT and GPX in erythrocytes in the WOs group were significantly decreased (P smog the values of VC, VE, SOD, and GPX, except for CAT, in the WOs were decreased gradually (P smog in the bodies of WOs, thereby causing potential oxidative and lipoperoxidative damages in their bodies.

  5. Electricity generation by direct oxidation of glucose in mediatorless microbial fuel cells.

    Science.gov (United States)

    Chaudhuri, Swades K; Lovley, Derek R

    2003-10-01

    Abundant energy, stored primarily in the form of carbohydrates, can be found in waste biomass from agricultural, municipal and industrial sources as well as in dedicated energy crops, such as corn and other grains. Potential strategies for deriving useful forms of energy from carbohydrates include production of ethanol and conversion to hydrogen, but these approaches face technical and economic hurdles. An alternative strategy is direct conversion of sugars to electrical power. Existing transition metal-catalyzed fuel cells cannot be used to generate electric power from carbohydrates. Alternatively, biofuel cells in which whole cells or isolated redox enzymes catalyze the oxidation of the sugar have been developed, but their applicability has been limited by several factors, including (i) the need to add electron-shuttling compounds that mediate electron transfer from the cell to the anode, (ii) incomplete oxidation of the sugars and (iii) lack of long-term stability of the fuel cells. Here we report on a novel microorganism, Rhodoferax ferrireducens, that can oxidize glucose to CO(2) and quantitatively transfer electrons to graphite electrodes without the need for an electron-shuttling mediator. Growth is supported by energy derived from the electron transfer process itself and results in stable, long-term power production.

  6. Engine-integrated solid oxide fuel cells for efficient electrical power generation on aircraft

    Science.gov (United States)

    Waters, Daniel F.; Cadou, Christopher P.

    2015-06-01

    This work investigates the use of engine-integrated catalytic partial oxidation (CPOx) reactors and solid oxide fuel cells (SOFCs) to reduce fuel burn in vehicles with large electrical loads like sensor-laden unmanned air vehicles. Thermodynamic models of SOFCs, CPOx reactors, and three gas turbine (GT) engine types (turbojet, combined exhaust turbofan, separate exhaust turbofan) are developed and checked against relevant data and source material. Fuel efficiency is increased by 4% and 8% in the 50 kW and 90 kW separate exhaust turbofan systems respectively at only modest cost in specific power (8% and 13% reductions respectively). Similar results are achieved in other engine types. An additional benefit of hybridization is the ability to provide more electric power (factors of 3 or more in some cases) than generator-based systems before encountering turbine inlet temperature limits. A sensitivity analysis shows that the most important parameters affecting the system's performance are operating voltage, percent fuel oxidation, and SOFC assembly air flows. Taken together, this study shows that it is possible to create a GT-SOFC hybrid where the GT mitigates balance of plant losses and the SOFC raises overall system efficiency. The result is a synergistic system with better overall performance than stand-alone components.

  7. Electrical Properties of Conductive Cotton Yarn Coated with Eosin Y Functionalized Reduced Graphene Oxide.

    Science.gov (United States)

    Kim, Eunju; Arul, Narayanasamy Sabari; Han, Jeong In

    2016-06-01

    This study reports the fabrication and investigation of the electrical properties of two types of conductive cotton yarns coated with eosin Y or eosin B functionalized reduced graphene (RGO) and bare graphene oxide (GO) using dip-coating method. The surface morphology of the conductive cotton yarn coated with reduced graphene oxide was observed by Scanning Electron Microscope (SEM). Due to the strong electrostatic attractive forces, the negatively charged surface such as the eosin Y functionalized reduced graphene oxide or bare GO can be easily coated to the positively charged polyethyleneimine (PEI) treated cotton yarn. The maximum current for the conductive cotton yarn coated with eosin Y functionalized RGO and bare GO with 20 cycles repetition of (5D + R) process was found to be 793.8 μA and 3482.8 μA. Our results showed that the electrical conductivity of bare GO coated conductive cotton yarn increased by approximately four orders of magnitude with the increase in the dipping cycle of (5D+R) process.

  8. Low temperature formation of electrode having electrically conductive metal oxide surface

    Science.gov (United States)

    Anders, Simone; Anders, Andre; Brown, Ian G.; McLarnon, Frank R.; Kong, Fanping

    1998-01-01

    A low temperature process is disclosed for forming metal suboxides on substrates by cathodic arc deposition by either controlling the pressure of the oxygen present in the deposition chamber, or by controlling the density of the metal flux, or by a combination of such adjustments, to thereby control the ratio of oxide to metal in the deposited metal suboxide coating. The density of the metal flux may, in turn, be adjusted by controlling the discharge current of the arc, by adjusting the pulse length (duration of on cycle) of the arc, and by adjusting the frequency of the arc, or any combination of these parameters. In a preferred embodiment, a low temperature process is disclosed for forming an electrically conductive metal suboxide, such as, for example, an electrically conductive suboxide of titanium, on an electrode surface, such as the surface of a nickel oxide electrode, by such cathodic arc deposition and control of the deposition parameters. In the preferred embodiment, the process results in a titanium suboxide-coated nickel oxide electrode exhibiting reduced parasitic evolution of oxygen during charging of a cell made using such an electrode as the positive electrode, as well as exhibiting high oxygen overpotential, resulting in suppression of oxygen evolution at the electrode at full charge of the cell.

  9. Significant electrical control of amorphous oxide thin film transistors by an ultrathin Ti surface polarity modifier

    Energy Technology Data Exchange (ETDEWEB)

    Cho, Byungsu [Division of Materials Science and Engineering, Hanyang University, Seoul 133-791 (Korea, Republic of); Samsung Display Co. Ltd., Tangjeong, Chungcheongnam-Do 336-741 (Korea, Republic of); Choi, Yonghyuk; Shin, Seokyoon [Division of Materials Science and Engineering, Hanyang University, Seoul 133-791 (Korea, Republic of); Jeon, Heeyoung [Department of Nano-scale Semiconductor Engineering, Hanyang University, Seoul 133-791 (Korea, Republic of); Seo, Hyungtak, E-mail: hseo@ajou.ac.kr [Department of Materials Science and Engineering and Energy Systems Research, Ajou University, Suwon 443-739 (Korea, Republic of); Jeon, Hyeongtag, E-mail: hjeon@hanyang.ac.kr [Division of Materials Science and Engineering, Hanyang University, Seoul 133-791 (Korea, Republic of); Department of Nano-scale Semiconductor Engineering, Hanyang University, Seoul 133-791 (Korea, Republic of)

    2014-01-27

    We demonstrate an enhanced electrical stability through a Ti oxide (TiO{sub x}) layer on the amorphous InGaZnO (a-IGZO) back-channel; this layer acts as a surface polarity modifier. Ultrathin Ti deposited on the a-IGZO existed as a TiO{sub x} thin film, resulting in oxygen cross-binding with a-IGZO surface. The electrical properties of a-IGZO thin film transistors (TFTs) with TiO{sub x} depend on the surface polarity change and electronic band structure evolution. This result indicates that TiO{sub x} on the back-channel serves as not only a passivation layer protecting the channel from ambient molecules or process variables but also a control layer of TFT device parameters.

  10. Optical and electrical characteristics of zirconium oxide thin films deposited on silicon substrates by spray pyrolysis

    International Nuclear Information System (INIS)

    Aguilar-Frutis, M.; Araiza, J.J.; Falcony, C.; Garcia, M.

    2002-01-01

    The optical and electrical characteristics of zirconium oxide thin films deposited by spray pyrolysis on silicon substrates are reported. The films were deposited from a spraying solution of zirconium acetylacetonate in N,N-dimethylformamide using an ultrasonic mist generator on (100) Si substrates. The substrate temperature during deposition was in the range of 400 to 600 grad C. Deposition rates up to 16 A/sec were obtained depending on the spraying solution concentration and on the substrate temperature. A refraction index of the order of 2.0 was measured on these films by ellipsometry. The electrical characteristics of the films were determined from the capacitance and current versus voltage measurements. The addition of water mist during the spraying deposition process was also studied in the characteristics of the films. (Authors)

  11. Removal of oxides from alkali metal melts by reductive titration to electrical resistance-change end points

    Science.gov (United States)

    Tsang, Floris Y.

    1980-01-01

    Alkali metal oxides dissolved in alkali metal melts are reduced with soluble metals which are converted to insoluble oxides. The end points of the reduction is detected as an increase in electrical resistance across an alkali metal ion-conductive membrane interposed between the oxide-containing melt and a material capable of accepting the alkali metal ions from the membrane when a difference in electrical potential, of the appropriate polarity, is established across it. The resistance increase results from blocking of the membrane face by ions of the excess reductant metal, to which the membrane is essentially non-conductive.

  12. Tunable electronic, electrical and optical properties of graphene oxide sheets by ion irradiation

    Science.gov (United States)

    Jayalakshmi, G.; Saravanan, K.; Panigrahi, B. K.; Sundaravel, B.; Gupta, Mukul

    2018-05-01

    The tunable electronic, electrical and optical properties of graphene oxide (GO) sheets were investigated using a controlled reduction by 500 keV Ar+-ion irradiation. The carbon to oxygen ratio of the GO sheets upon the ion beam reduction has been estimated using resonant Rutherford backscattering spectrometry analyses and its effect on the electrical and optical properties of GO sheets has been studied using sheet resistance measurements and photoluminescence (PL) measurements. The restoration of sp 2-hybridized carbon atoms within the sp 3 matrix is found to be increases with increasing the Ar+-ion fluences as evident from Fourier transform infrared, and x-ray absorption near-edge structure measurements. The decrease in the number of disorder-induced local density of states (LDOSs) within the π-π* gap upon the reduction causes the shifting of PL emission from near infra-red to blue region and decreases the sheet resistance. The improved electrical and optical properties of GO sheets were correlated to the decrease in the number of LDOSs within the π-π* gap. Our experimental investigations suggest ion beam irradiation is one of an effective approaches to reduce GO to RGO and to tailor its electronic, electrical and optical properties.

  13. Microstructural and electrical characterization of Mn-Co spinel protective coatings for solid oxide cell interconnects

    DEFF Research Database (Denmark)

    Molin, S.; Sabato, A. G.; Bindi, M.

    2017-01-01

    Electrophoretic deposition, thermal co-evaporation and RF magnetron sputtering methods are used for the preparation of Mn-Co based ceramic coatings for solid oxide fuel cell steel interconnects. Both thin and relatively thick coatings (1–15 μm) are prepared and characterised for their potential...... protective behaviour. Mn-Co coated Crofer22APU samples are electrically tested for 5000 h at 800 °C under a 500 mA cm−2 current load to determine their Area Specific Resistance increase due to a growing chromia scale. After tests, samples are analysed by scanning and transmission electron microscopy....... Analysis is focused on the potential chromium diffusion to or through the coating, the oxide scale thickness and possible reactions at the interfaces. The relationships between the coating type, thickness and effectiveness are reviewed and discussed. Out of the three Mn-Co coatings compared in this study...

  14. Hybrid nanocomposite based on cellulose and tin oxide: growth, structure, tensile and electrical characteristics

    International Nuclear Information System (INIS)

    Mahadeva, Suresha K; Kim, Jaehwan

    2011-01-01

    A highly flexible nanocomposite was developed by coating a regenerated cellulose film with a thin layer of tin oxide (SnO 2 ) by liquid-phase deposition. Tin oxide was crystallized in solution and formed nanocrystal coatings on regenerated cellulose. The nanocrystalline layers did not exfoliate from cellulose. Transmission electron microscopy and energy dispersive x-ray spectroscopy suggest that SnO 2 was not only deposited over the cellulose surface, but also nucleated and grew inside the cellulose film. Current-voltage characteristics of the nanocomposite revealed that its electrical resistivity decreases with deposition time, with the lowest value obtained for 24 h of deposition. The cellulose-SnO 2 hybrid nanocomposite can be used for biodegradable and disposable chemical, humidity and biosensors.

  15. Structural, optical and electrical properties of indium tin oxide thin films prepared by spray pyrolysis

    Energy Technology Data Exchange (ETDEWEB)

    Benamar, E.; Rami, M.; Messaoudi, C.; Sayah, D.; Ennaoui, A. [Deptartmento de Physique, Laboratoire de Physique des Materiaux, Faculte des Sciences, BP 1014, Ave Inb Battouta, Rabat (Morocco)

    1998-11-27

    Spray pyrolysis process has been used to deposit highly transparent and conducting films of tin-doped indium oxide onto glass substrates. The electrical, structural and optical properties have been investigated as a function of various deposition parameters namely dopant concentrations, temperature and nature of substrate. The morphology of the surface as a function of the substrate temperature has been studied using atomic force microscopy. XRD has shown that deposited films are polycrystalline without second phases and have a preferred orientation (4 0 0). Indium tin oxide layers with low resistivity values around 4x10{sup -5} {Omega} cm and transmission coefficients in the visible and near-infrared range of about 85-90% have been easily obtained

  16. Effective Dosage of Midazolam to Erase the Memory of Vascular Pain During Propofol Administration.

    Science.gov (United States)

    Boku, Aiji; Inoue, Mika; Hanamoto, Hiroshi; Oyamaguchi, Aiko; Kudo, Chiho; Sugimura, Mitsutaka; Niwa, Hitoshi

    Intravenous sedation with propofol is often administered to anxious patients in dental practice. Pain on injection of propofol is a common adverse effect. This study aimed to determine the age-adjusted doses of midazolam required to erase memory of vascular pain of propofol administration and assess whether the Ramsay Sedation Scale (RSS) after the pretreatment of midazolam was useful to predict amnesia of the vascular pain of propofol administration. A total of 246 patients with dental phobia requiring dental treatment under intravenous sedation were included. Patients were classified according to their age: 30s, 40s, 50s, and 60s. Three minutes after administration of a predetermined dose of midazolam, propofol was infused continuously. After completion of the dental procedure, patients were interviewed about the memory of any pain or discomfort in the injection site or forearm. The dosage of midazolam was determined using the Dixon up-down method. The first patient was administered 0.03 mg/kg, and if memory of vascular pain remained, the dosage was increased by 0.01 mg/kg for the next patient, and then if the memory was erased, the dosage was decreased by 0.01 mg/kg. The effective dosage of midazolam in 95% of each age group for erasing the memory of propofol vascular pain (ED95) was determined using logistic analysis. The accuracy of RSS to predict the amnesia of injection pain was assessed by receiver operating characteristic (ROC) analysis. The ED95 of midazolam to erase the memory of propofol vascular pain was 0.061 mg/kg in patients in their 30s, 0.049 mg/kg in patients in their 40s, 0.033 mg/kg in patients in their 50s, and 0.033 mg/kg in patients in their 60s. The area under the ROC curve was 0.31. The ED95 of midazolam required to erase the memory of propofol vascular pain demonstrated a downward trend with age. On the other hand, it was impossible to predict the amnesia of propofol vascular pain using the RSS.

  17. Electrical transport properties of nanoplates shaped tungsten oxide embedded poly(vinyl-alcohol) film

    Science.gov (United States)

    Das, Amit Kumar; Chatterjee, Piyali; Meikap, Ajit Kumar

    2018-04-01

    Tungsten oxide (WO3) nanoplates have been synthesized via hydrothermal method. The average crystallite size of the nanoplates is 28.9 ± 0.5 nm. The direct and indirect band gap of WO3 is observed. The AC conductivity of PVA-WO3 composite film has been observed and carrier transport mechanism follows correlated barrier hopping model. The maximum barrier height of the composite film is 0.1 eV. The electric modulus reflects the non-Debye type behaviour of relaxation time which is simulated by Kohlrausch-Willims-Watts (KWW) function.

  18. Electrical and optical properties of indium tin oxide/epoxy composite film

    International Nuclear Information System (INIS)

    Guo Xia; Guo Chun-Wei; Chen Yu; Su Zhi-Ping

    2014-01-01

    The electrical and optical properties of the indium tin oxide (ITO)/epoxy composite exhibit dramatic variations as functions of the ITO composition and ITO particle size. Sharp increases in the conductivity in the vicinity of a critical volume fraction have been found within the framework of percolation theory. A conductive and insulating transition model is extracted by the ITO particle network in the SEM image, and verified by the resistivity dependence on the temperature. The dependence of the optical transmittance on the particle size was studied. Further decreasing the ITO particle size could further improve the percolation threshold and light transparency of the composite film. (condensed matter: structural, mechanical, and thermal properties)

  19. Effect of Target Density on Microstructural, Electrical, and Optical Properties of Indium Tin Oxide Thin Films

    Science.gov (United States)

    Zhu, Guisheng; Zhi, Li; Yang, Huijuan; Xu, Huarui; Yu, Aibing

    2012-09-01

    In this paper, indium tin oxide (ITO) targets with different densities were used to deposit ITO thin films. The thin films were deposited from these targets at room temperature and annealed at 750°C. Microstructural, electrical, and optical properties of the as-prepared films were studied. It was found that the target density had no effect on the properties or deposition rate of radiofrequency (RF)-sputtered ITO thin films, different from the findings for direct current (DC)-sputtered films. Therefore, when using RF sputtering, the target does not require a high density and may be reused.

  20. Optical and electrical characterizations of nanocomposite film of titania adsorbed onto oxidized multiwalled carbon nanotubes

    International Nuclear Information System (INIS)

    Feng Wei; Feng Yiyu; Wu Zigang; Fujii, Akihiko; Ozaki, Masanori; Yoshino, Katsumi

    2005-01-01

    Composite film containing titania electrostatically linked to oxidized multiwalled carbon nanotubes (TiO 2 -s-MWNTs) was prepared from a suspension of TiO 2 nanoparticles in soluble carbon nanotubes. The structure of the film was analysed principally by Fourier transform infrared spectroscopy, scanning electron micrography and x-ray diffraction. The optical and electrical characterizations of the film were investigated by UV-vis spectrum, photoluminescence and photoconductivity. The enhancement of photocurrent in the TiO 2 -s-MWNT film is discussed by taking the photoinduced charge transfer between the MWNT and TiO 2 into consideration

  1. Influence of air flow rate on structural and electrical properties of undoped indium oxide thin films

    International Nuclear Information System (INIS)

    Mirzapour, S.; Rozati, S.M.; Takwale, M.G.; Marathe, B.R.; Bhide, V.G.

    1993-01-01

    Using the spray pyrolysis technique thin films of indium oxide were prepared on Corning glass (7059) at a substrate temperature of 425 C at different flow rates. The electrical and structural properties of these films were studied. The Hall measurements at room temperature showed that the films prepared in an air flow rate of 7 litre min -1 have the highest mobility of 47 cm 2 V -1 s -1 and a minimum resistivity of 1.125 x 10 -3 Ω cm. The X-ray diffraction patterns showed that the films have a preferred orientation of [400] which peaks at the air flow rate of 7 litre min -1 . (orig.)

  2. Electrical and optical properties of reactive DC magnetron sputtered silver oxide thin films: role of oxygen

    Energy Technology Data Exchange (ETDEWEB)

    Kumar Barik, Ullash; Srinivasan, S; Nagendra, C L; Subrahmanyam, A

    2003-04-01

    Silver oxide thin films have been prepared on soda lime glass substrates at room temperature (300 K) by reactive DC Magnetron sputtering technique using pure silver metal target; the oxygen flow rates have been varied in the range 0.00-2.01 sccm. The X-ray diffraction data on these films show a systematic change from metallic silver to silver (sub) oxides. The electrical resistivity increases with increasing oxygen flow. The films show a p-type behavior (by both Hall and Seebeck measurements) for the oxygen flow rates of 0.54, 1.09 and 1.43 sccm. The refractive index of the films (at 632.8 nm) decreases with increasing oxygen content and is in the range 1.167-1.145, whereas the p-type films show a higher refractive index (1.186-1.204). The work function of these silver oxide films has been measured by Kelvin Probe technique. The results, in specific, the p-type conductivity in the silver oxide films, have been explained on the basis of the theory of partial ionic charge proposed by Sanderson.

  3. Electrical and optical properties of reactive DC magnetron sputtered silver oxide thin films: role of oxygen

    International Nuclear Information System (INIS)

    Kumar Barik, Ullash; Srinivasan, S.; Nagendra, C.L.; Subrahmanyam, A.

    2003-01-01

    Silver oxide thin films have been prepared on soda lime glass substrates at room temperature (300 K) by reactive DC Magnetron sputtering technique using pure silver metal target; the oxygen flow rates have been varied in the range 0.00-2.01 sccm. The X-ray diffraction data on these films show a systematic change from metallic silver to silver (sub) oxides. The electrical resistivity increases with increasing oxygen flow. The films show a p-type behavior (by both Hall and Seebeck measurements) for the oxygen flow rates of 0.54, 1.09 and 1.43 sccm. The refractive index of the films (at 632.8 nm) decreases with increasing oxygen content and is in the range 1.167-1.145, whereas the p-type films show a higher refractive index (1.186-1.204). The work function of these silver oxide films has been measured by Kelvin Probe technique. The results, in specific, the p-type conductivity in the silver oxide films, have been explained on the basis of the theory of partial ionic charge proposed by Sanderson

  4. Strain and Defect Engineering for Tailored Electrical Properties in Perovskite Oxide Thin Films and Superlattices

    Science.gov (United States)

    Hsing, Greg Hsiang-Chun

    Functional complex-oxides display a wide spectrum of physical properties, including ferromagnetism, piezoelectricity, ferroelectricity, photocatalytic and metal-insulating transition (MIT) behavior. Within this family, oxides with a perovskite structure have been widely studied, especially in the form of thin films and superlattices (heterostructures), which are strategically and industrially important because they offer a wide range of opportunities for electronic, piezoelectric and sensor applications. The first part of my thesis focuses on understanding and tuning of the built-in electric field found in PbTiO3/SrTiO3 (PTO/STO) ferroelectric superlattices and other ferroelectric films. The artificial layering in ferroelectric superlattices is a potential source of polarization asymmetry, where one polarization state is preferred over another. One manifestation of this asymmetry is a built-in electric field associated with shifted polarization hysteresis. Using off-axis RF-magnetron sputtering, we prepared several compositions of PTO/STO superlattice thin films; and for comparison PbTiO3/SrRuO 3 (PTO/SRO) superlattices, which have an additional intrinsic compositional asymmetry at the interface. Both theoretical modeling and experiments indicate that the layer-by-layer superlattice structure aligns the Pb-O vacancy defect dipoles in the c direction which contributes significantly to the built-in electric field; however the preferred polarization direction is different between the PTO/STO and PTO/SRO interface. By designing a hybrid superlattice that combines PTO/STO and PTO/SRO superlattices, we show the built-in electric field can be tuned to zero by changing the composition of the combo-superlattice. The second part of my thesis focuses on the epitaxial growth of SrCrO 3 (SCO) films. The inconsistent reports regarding its electrical and magnetic properties through the years stem from the compositionally and structurally ill-defined polycrystalline samples, but

  5. Influence of implantation energy on the electrical properties of ultrathin gate oxides grown on nitrogen implanted Si substrates

    International Nuclear Information System (INIS)

    Kapetanakis, E.; Skarlatos, D.; Tsamis, C.; Normand, P.; Tsoukalas, D.

    2003-01-01

    Metal-oxide-semiconductor tunnel diodes with gate oxides, in the range of 2.5-3.5 nm, grown either on 25 or 3 keV nitrogen-implanted Si substrates at (0.3 or 1) x10 15 cm -2 dose, respectively, are investigated. The dependence of N 2 + ion implant energy on the electrical quality of the growing oxide layers is studied through capacitance, equivalent parallel conductance, and gate current measurements. Superior electrical characteristics in terms of interface state trap density, leakage current, and breakdown fields are found for oxides obtained through 3 keV nitrogen implants. These findings together with the full absence of any extended defect in the silicon substrate make the low-energy nitrogen implantation technique an attractive option for reproducible low-cost growth of nanometer-thick gate oxides

  6. Influence of graphene oxide on mechanical, morphological, barrier, and electrical properties of polymer membranes

    Directory of Open Access Journals (Sweden)

    Ali Ammar

    2016-03-01

    Full Text Available This paper expresses a short review of research on the effects of graphene oxide (GO as a nanocomposite element on polymer morphology and resulting property modifications including mechanical, barrier, and electrical conductivity. The effects on mechanical enhancement related to stress measurements in particular are a focus of this review. To first order, varying levels of aggregation of GO in different polymer matrices as a result of their weak inter-particle attractive interactions mainly affect the nanocomposite mechanical properties. The near surface dispersion of GO in polymer/GO nanocomposites can be investigated by studying the surface morphology of these nanocomposites using scanning probe microscopy such as atomic force microscope (AFM and scanning electron microscope (SEM. In the bulk, GO dispersion can be studied by wide-angle X-ray scattering (WAXD by analyzing the diffraction peaks corresponding to the undispersed GO fraction in the polymer matrix. In terms of an application, we review how the hydrophilicity of graphene oxide and its hydrogen bonding potential can enhance water flux of these nanocomposite materials in membrane applications. Likewise, the electrical conductivity of polymer films and bulk polymers can be advantageously enhanced via the percolative dispersion of GO nanoparticles, but this typically requires some additional chemical treatment of the GO nanoparticles to transform it to reduced GO.

  7. Structural, optical and electrical characteristics of nickel oxide thin films synthesised through chemical processing method

    Science.gov (United States)

    Akinkuade, Shadrach; Mwankemwa, Benanrd; Nel, Jacqueline; Meyer, Walter

    2018-04-01

    A simple and cheap chemical deposition method was used to produce a nickel oxide (NiO) thin film on glass substrates from a solution that contained Ni2+ and monoethanolamine. Thermal treatment of the film at temperatures above 350 °C for 1 h caused decomposition of the nickel hydroxide into nickel oxide. Structural, optical and electrical properties of the film were studied using X-ray diffraction (XRD), spectrophotometry, current-voltage measurements and scanning electron microscopy (SEM). The film was found to be polycrystalline with interplanar spacing of 0.241 nm, 0.208 nm and 0.148 nm for (111), (200) and (220) planes respectively, the lattice constant a was found to be 0.417 nm. The film had a porous surface morphology, formed from a network of nanowalls of average thickness of 66.67 nm and 52.00 nm for as-deposited and annealed films respectively. Transmittance of visible light by the as-deposited film was higher and the absorption edge of the film blue-shifted after annealing. The optical band gap of the annealed film was 3.8 eV. Electrical resistivity of the film was 378 Ωm.

  8. Studies on synthesis of reduced graphene oxide (RGO) via green route and its electrical property

    International Nuclear Information System (INIS)

    Sadhukhan, Sourav; Ghosh, Tapas Kumar; Rana, Dipak; Roy, Indranil; Bhattacharyya, Amartya; Sarkar, Gunjan; Chakraborty, Mukut; Chattopadhyay, Dipankar

    2016-01-01

    Highlights: • RGO-1 and RGO-2 were synthesized by green method using different phytoextracts. • M. indica L., S. tuberosum L. phytoextracts act as reducing and stabilizing agents. • Conjugated structure of graphene is established following partial reduction of GO. • Electrical conductivities of RGO-1 and RGO-2 are higher than GO. - Abstract: An environmentally friendly method has been applied for the preparation of reduced graphene oxide (RGO). This method was developed by using polyphenols that contained a phytoextract of Mangifera indica L. along with Solanum tuberosum L. as reducing agents since they are non-toxic and naturally available. The phytoextracts used in the production of RGO was set between 60 and 70 °C. Graphene oxide (GO) was prepared by modified Hummer’s method as reported in earlier findings. Structural and morphological studies demonstrate that the part of the oxygen functionalities in GO can be removed by following green reduction. Characterizations of the resulting product have been done by X-ray diffraction, FTIR, UV–vis and Raman spectroscopy. FESEM, TEM, EDX spectrum, TGA, DLS and Zeta potential measurements of the samples have also been carried out to study the morphological, thermal and surface charge characteristics. Electrical conductivity was also measured to check the extent of reduction of GO to RGO.

  9. Studies on synthesis of reduced graphene oxide (RGO) via green route and its electrical property

    Energy Technology Data Exchange (ETDEWEB)

    Sadhukhan, Sourav [Department of Polymer Science and Technology, University of Calcutta, 92 A.P.C. Road, Kolkata 700009 (India); Department of Chemistry, Budge Budge Institute of Technology, Nischintapur, Budge Budge, Kolkata 700137 (India); Ghosh, Tapas Kumar [Department of Polymer Science and Technology, University of Calcutta, 92 A.P.C. Road, Kolkata 700009 (India); Department of Chemistry, West Bengal State University, Barasat, Kolkata 700126 (India); Rana, Dipak [Department of Chemical and Biological Engineering, Industrial Membrane Research Institute, University of Ottawa, 161 Louis Pasteur St., Ottawa, Ontario K1 N 6N5 (Canada); Roy, Indranil; Bhattacharyya, Amartya; Sarkar, Gunjan [Department of Polymer Science and Technology, University of Calcutta, 92 A.P.C. Road, Kolkata 700009 (India); Chakraborty, Mukut [Department of Chemistry, West Bengal State University, Barasat, Kolkata 700126 (India); Chattopadhyay, Dipankar, E-mail: dipankar.chattopadhyay@gmail.com [Department of Polymer Science and Technology, University of Calcutta, 92 A.P.C. Road, Kolkata 700009 (India)

    2016-07-15

    Highlights: • RGO-1 and RGO-2 were synthesized by green method using different phytoextracts. • M. indica L., S. tuberosum L. phytoextracts act as reducing and stabilizing agents. • Conjugated structure of graphene is established following partial reduction of GO. • Electrical conductivities of RGO-1 and RGO-2 are higher than GO. - Abstract: An environmentally friendly method has been applied for the preparation of reduced graphene oxide (RGO). This method was developed by using polyphenols that contained a phytoextract of Mangifera indica L. along with Solanum tuberosum L. as reducing agents since they are non-toxic and naturally available. The phytoextracts used in the production of RGO was set between 60 and 70 °C. Graphene oxide (GO) was prepared by modified Hummer’s method as reported in earlier findings. Structural and morphological studies demonstrate that the part of the oxygen functionalities in GO can be removed by following green reduction. Characterizations of the resulting product have been done by X-ray diffraction, FTIR, UV–vis and Raman spectroscopy. FESEM, TEM, EDX spectrum, TGA, DLS and Zeta potential measurements of the samples have also been carried out to study the morphological, thermal and surface charge characteristics. Electrical conductivity was also measured to check the extent of reduction of GO to RGO.

  10. Oxide Thin-Film Electronics using All-MXene Electrical Contacts

    KAUST Repository

    Wang, Zhenwei

    2018-02-23

    2D MXenes have shown great promise in electrochemical and electromagnetic shielding applications. However, their potential use in electronic devices is significantly less explored. The unique combination of metallic conductivity and hydrophilic surface suggests that MXenes can also be promising in electronics and sensing applications. Here, it is shown that metallic Ti3C2 MXene with work function of 4.60 eV can make good electrical contact with both zinc oxide (ZnO) and tin monoxide (SnO) semiconductors, with negligible band offsets. Consequently, both n-type ZnO and p-type SnO thin-film transistors (TFTs) have been fabricated entirely using large-area MXene (Ti3C2) electrical contacts, including gate, source, and drain. The n- and p-type TFTs show balanced performance, including field-effect mobilities of 2.61 and 2.01 cm2 V−1 s−1 and switching ratios of 3.6 × 106 and 1.1 × 103, respectively. Further, complementary metal oxide semiconductor (CMOS) inverters are demonstrated. The CMOS inverters show large voltage gain of 80 and excellent noise margin of 3.54 V, which is 70.8% of the ideal value. Moreover, the operation of CMOS inverters is shown to be very stable under a 100 Hz square waveform input. The current results suggest that MXene (Ti3C2) can play an important role as contact material in nanoelectronics.

  11. The comparison of gamma-radiation and electrical stress influences on oxide and interface defects in power VDMOSFET

    Directory of Open Access Journals (Sweden)

    Đorić-Veljković Snežana M.

    2013-01-01

    Full Text Available The behaviour of oxide and interface defects in n-channel power vertical double-diffused metal-oxide-semiconductor field-effect transistors, firstly degraded by the gamma-irradiation and electric field and subsequently recovered and annealed, is presented. By analyzing the transfer characteristic shifts, the changes of threshold voltage and underlying changes of gate oxide and interface trap densities during the stress (recovery, annealing of investigated devices, it is shown that these two types of stress influence differently on the gate oxide and the SiO2-Si interface. [Projekat Ministarstva nauke Republike Srbije, br. OI171026

  12. Electrooxidative Rhodium-Catalyzed C-H/C-H Activation: Electricity as Oxidant for Cross-Dehydrogenative Alkenylation.

    Science.gov (United States)

    Qiu, Youai; Kong, Wei-Jun; Struwe, Julia; Sauermann, Nicolas; Rogge, Torben; Scheremetjew, Alexej; Ackermann, Lutz

    2018-04-06

    Rhodium(III) catalysis has enabled a plethora of oxidative C-H functionalizations, which predominantly employ stoichiometric amounts of toxic and/or expensive metal oxidants. In contrast, we describe the first electrochemical C-H activation by rhodium catalysis that avoids hazardous chemical oxidants. Thus, environmentally-benign twofold C-H/C-H functionalizations were accomplished with weakly-coordinating benzoic acids and benzamides, employing electricity as the terminal oxidant with H2 as the sole byproduct. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  13. Effect of proton-conduction in electrolyte on electric efficiency of multi-stage solid oxide fuel cells

    Science.gov (United States)

    Matsuzaki, Yoshio; Tachikawa, Yuya; Somekawa, Takaaki; Hatae, Toru; Matsumoto, Hiroshige; Taniguchi, Shunsuke; Sasaki, Kazunari

    2015-07-01

    Solid oxide fuel cells (SOFCs) are promising electrochemical devices that enable the highest fuel-to-electricity conversion efficiencies under high operating temperatures. The concept of multi-stage electrochemical oxidation using SOFCs has been proposed and studied over the past several decades for further improving the electrical efficiency. However, the improvement is limited by fuel dilution downstream of the fuel flow. Therefore, evolved technologies are required to achieve considerably higher electrical efficiencies. Here we present an innovative concept for a critically-high fuel-to-electricity conversion efficiency of up to 85% based on the lower heating value (LHV), in which a high-temperature multi-stage electrochemical oxidation is combined with a proton-conducting solid electrolyte. Switching a solid electrolyte material from a conventional oxide-ion conducting material to a proton-conducting material under the high-temperature multi-stage electrochemical oxidation mechanism has proven to be highly advantageous for the electrical efficiency. The DC efficiency of 85% (LHV) corresponds to a net AC efficiency of approximately 76% (LHV), where the net AC efficiency refers to the transmission-end AC efficiency. This evolved concept will yield a considerably higher efficiency with a much smaller generation capacity than the state-of-the-art several tens-of-MW-class most advanced combined cycle (MACC).

  14. High-Surface-Area Nitrogen-Doped Reduced Graphene Oxide for Electric Double-Layer Capacitors.

    Science.gov (United States)

    Youn, Hee-Chang; Bak, Seong-Min; Kim, Myeong-Seong; Jaye, Cherno; Fischer, Daniel A; Lee, Chang-Wook; Yang, Xiao-Qing; Roh, Kwang Chul; Kim, Kwang-Bum

    2015-06-08

    A two-step method consisting of solid-state microwave irradiation and heat treatment under NH3 gas was used to prepare nitrogen-doped reduced graphene oxide (N-RGO) with a high specific surface area (1007 m(2)  g(-1) ), high electrical conductivity (1532 S m(-1) ), and low oxygen content (1.5 wt %) for electrical double-layer capacitor applications. The specific capacitance of N-RGO was 291 F g(-1) at a current density of 1 A g(-1) , and a capacitance of 261 F g(-1) was retained at 50 A g(-1) , which indicated a very good rate capability. N-RGO also showed excellent cycling stability and preserved 96 % of the initial specific capacitance after 100 000 cycles. Near-edge X-ray absorption fine-structure spectroscopy results provided evidenced for the recovery of π conjugation in the carbon networks with the removal of oxygenated groups and revealed chemical bonding of the nitrogen atoms in N-RGO. The good electrochemical performance of N-RGO is attributed to its high surface area, high electrical conductivity, and low oxygen content. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  15. Marginal abatement cost curve for nitrogen oxides incorporating controls, renewable electricity, energy efficiency, and fuel switching.

    Science.gov (United States)

    Loughlin, Daniel H; Macpherson, Alexander J; Kaufman, Katherine R; Keaveny, Brian N

    2017-10-01

    A marginal abatement cost curve (MACC) traces out the relationship between the quantity of pollution abated and the marginal cost of abating each additional unit. In the context of air quality management, MACCs are typically developed by sorting control technologies by their relative cost-effectiveness. Other potentially important abatement measures such as renewable electricity, energy efficiency, and fuel switching (RE/EE/FS) are often not incorporated into MACCs, as it is difficult to quantify their costs and abatement potential. In this paper, a U.S. energy system model is used to develop a MACC for nitrogen oxides (NO x ) that incorporates both traditional controls and these additional measures. The MACC is decomposed by sector, and the relative cost-effectiveness of RE/EE/FS and traditional controls are compared. RE/EE/FS are shown to have the potential to increase emission reductions beyond what is possible when applying traditional controls alone. Furthermore, a portion of RE/EE/FS appear to be cost-competitive with traditional controls. Renewable electricity, energy efficiency, and fuel switching can be cost-competitive with traditional air pollutant controls for abating air pollutant emissions. The application of renewable electricity, energy efficiency, and fuel switching is also shown to have the potential to increase emission reductions beyond what is possible when applying traditional controls alone.

  16. Microstructural and electrical characteristics of rare earth oxides doped ZnO varistor films

    Science.gov (United States)

    Jiao, Lei; Mei, Yunzhu; Xu, Dong; Zhong, Sujuan; Ma, Jia; Zhang, Lei; Bao, Li

    2018-02-01

    ZnO-Bi2O3 varistor films doped with two kinds of rare earth element oxides (Lu2O3 and Yb2O3) were prepared by the sol-gel method. The effects of Lu2O3/Yb2O3 doping on the microstructure and electrical characteristics of ZnO-Bi2O3 varistor films were investigated. All samples show a homogenized morphology and an improved nonlinear relationship between the electric field (E) and current density (I). Both Yb2O3 and Lu2O3 doping can decrease the grain size of ZnO-Bi2O3 varistor films and improve the electrical properties, which have a positive effect on the development of ZnO varistor ceramics. Yb2O3 doping significantly increases the dielectric constant at low frequency. 0.2 mol. % Yb2O3 doped ZnO-Bi2O3 varistor films exhibit the highest nonlinear coefficient (2.5) and the lowest leakage current (328 μA) among Lu2O3/Yb2O3 doped ZnO-Bi2O3 varistor films. Similarly, 0.1 mol. % Lu2O3 doping increases the nonlinear coefficient to 1.9 and decrease the leakage current to 462 μA.

  17. Electrical properties of tin-doped zinc oxide nanostructures doped at different dopant concentrations

    International Nuclear Information System (INIS)

    Nasir, M. F.; Zainol, M. N.; Hannas, M.; Mamat, M. H.; Rusop, Mohamad; Rahman, S. A.

    2016-01-01

    This project has been focused on the electrical and optical properties respectively on the effect of Tin doped zinc oxide (ZnO) thin films at different dopant concentrations. These thin films were doped with different Sn dopant concentrations at 1 at%, 2 at%, 3 at%, 4 at% and 5 at% was selected as the parameter to optimize the thin films quality while the annealing temperature is fixed 500 °C. Sn doped ZnO solutions were deposited onto the glass substrates using sol-gel spin coating method. This project was involved with three phases, which are thin films preparation, deposition and characterization. The thin films were characterized using Current Voltage (I-V) measurement and ultraviolet-visible-near-infrared (UV-vis-NIR) spectrophotometer (Perkin Elmer Lambda 750) for electrical properties and optical properties. The electrical properties show that the resistivity is the lowest at 4 at% Sn doping concentration with the value 3.08 × 10"3 Ωcm"−"1. The absorption coefficient spectrum obtained shows all films exhibit very low absorption in the visible (400-800 nm) and near infrared (NIR) (>800 nm) range but exhibit high absorption in the UV range.

  18. Electrical properties of undoped zinc oxide nanostructures at different annealing temperature

    Energy Technology Data Exchange (ETDEWEB)

    Nasir, M. F., E-mail: babaibaik2002@yahoo.com; Zainol, M. N., E-mail: nizarzainol@yahoo.com; Hannas, M., E-mail: mhannas@gmail.com [NANO-ElecTronic Centre (NET), Faculty of Electrical Engineering, Universiti Teknologi MARA (UiTM), 40450 Shah Alam, Selangor (Malaysia); Mamat, M. H., E-mail: mhmamat@salam.uitm.edu.my; Rusop, Mohamad, E-mail: rusop@salam.uitm.edu.my [NANO-ElecTronic Centre (NET), Faculty of Electrical Engineering, Universiti Teknologi MARA (UiTM), 40450 Shah Alam, Selangor (Malaysia); NANO-SciTech Centre (NST), Institute of Science (IOS), Universiti Teknologi MARA - UiTM, 40450 Shah Alam, Selangor (Malaysia); Rahman, S. A., E-mail: saadah@um.edu.my [NANO-ElecTronic Centre (NET), Faculty of Electrical Engineering, Universiti Teknologi MARA (UiTM), 40450 Shah Alam, Selangor (Malaysia); Low Dimensional Materials Research Centre, Physics Department, Faculty of Science, University of Malaya, 50603 Kuala Lumpur (Malaysia)

    2016-07-06

    This project has been focused on the electrical and optical properties respectively on the effect of Undoped zinc oxide (ZnO) thin films at different annealing temperature which is varied 400 °C, 450 °C, 500 °C, and 550 °C.Undoped ZnO solutions were deposited onto the glass substrates using sol-gel spin coating method. This project was involved with three phases, which are thin films preparation, deposition and characterization. The thin films were characterized using Current Voltage (I-V) measurement and UV-vis-NIR spectrophotometer for electrical properties and optical properties. The electrical properties show that the resistivity is the lowest at 500 °C which its resistivity is 5.36 × 10{sup 4} Ωcm{sup −1}. The absorption coefficient spectrum obtained from UV-Vis-NIR spectrophotometer measurement shows all films exhibit very low absorption in the visible (400-800 nm) and near infrared (NIR) (>800 nm) range but exhibit high absorption in the UV range.

  19. Electrical conductivity of molten carbonate and carbonate-chloride systems coexisting with aluminium oxide powder

    Energy Technology Data Exchange (ETDEWEB)

    Nikolaeva, Elena V. [Institute of High Temperature Electrochemistry, Yekaterinburg (Russian Federation); Ural Federal Univ., Yekaterinburg (Russian Federation); Ural State Economic Univ., Yekaterinburg (Russian Federation); Bovet, Andrey L.; Zakiryanova, Irina D. [Institute of High Temperature Electrochemistry, Yekaterinburg (Russian Federation); Ural Federal Univ., Yekaterinburg (Russian Federation)

    2018-04-01

    The electrical properties of composite electrolytes (suspensions) composed of α-Al{sub 2}O{sub 3} powder and molten carbonate eutectic (Li{sub 2}CO{sub 3}-Na{sub 2}CO{sub 3}-K{sub 2}CO{sub 3}){sub eut} or molten carbonate-chloride mixture 0.72(Li{sub 2}CO{sub 3}-Na{sub 2}CO{sub 3}-K{sub 2}CO{sub 3}){sub eut}-0.28NaCl have been investigated by AC impedance method. This system shows a dependence of the electrical conductivity upon the temperature and the α-Al{sub 2}O{sub 3} content. The specific electrical conductivity of the α-Al{sub 2}O{sub 3}/(Li{sub 2}CO{sub 3}-Na{sub 2}CO{sub 3}-K{sub 2}CO{sub 3}){sub eut} system can be adequately described by the Maxwell equation for two-phase heterogeneous materials. The regression equation for the dependence of the specific conductivity of the α-Al{sub 2}O{sub 3}/(Li{sub 2}CO{sub 3}-Na{sub 2}CO{sub 3}-K{sub 2}CO{sub 3}){sub eut} composite on the aluminium oxide concentration and temperature was obtained.

  20. Electrical properties of tin-doped zinc oxide nanostructures doped at different dopant concentrations

    Energy Technology Data Exchange (ETDEWEB)

    Nasir, M. F., E-mail: babaibaik2002@yahoo.com; Zainol, M. N., E-mail: nizarzainol@yahoo.com; Hannas, M., E-mail: mhannas@gmail.com [NANO-ElecTronic Centre (NET), Faculty of Electrical Engineering, Universiti Teknologi MARA (UiTM), 40450 Shah Alam, Selangor (Malaysia); Mamat, M. H., E-mail: mhmamat@salam.uitm.edu.my; Rusop, Mohamad, E-mail: rusop@salam.uitm.edu.my [NANO-ElecTronic Centre (NET), Faculty of Electrical Engineering, Universiti Teknologi MARA (UiTM), 40450 Shah Alam, Selangor (Malaysia); NANO-SciTech Centre (NST), Institute of Science (IOS), Universiti Teknologi MARA - UiTM, 40450 Shah Alam, Selangor (Malaysia); Rahman, S. A., E-mail: saadah@um.edu.my [NANO-ElecTronic Centre (NET), Faculty of Electrical Engineering, Universiti Teknologi MARA (UiTM), 40450 Shah Alam, Selangor (Malaysia); Low Dimensional Materials Research Centre, Physics Department, Faculty of Science, University of Malaya, 50603 Kuala Lumpur (Malaysia)

    2016-07-06

    This project has been focused on the electrical and optical properties respectively on the effect of Tin doped zinc oxide (ZnO) thin films at different dopant concentrations. These thin films were doped with different Sn dopant concentrations at 1 at%, 2 at%, 3 at%, 4 at% and 5 at% was selected as the parameter to optimize the thin films quality while the annealing temperature is fixed 500 °C. Sn doped ZnO solutions were deposited onto the glass substrates using sol-gel spin coating method. This project was involved with three phases, which are thin films preparation, deposition and characterization. The thin films were characterized using Current Voltage (I-V) measurement and ultraviolet-visible-near-infrared (UV-vis-NIR) spectrophotometer (Perkin Elmer Lambda 750) for electrical properties and optical properties. The electrical properties show that the resistivity is the lowest at 4 at% Sn doping concentration with the value 3.08 × 10{sup 3} Ωcm{sup −1}. The absorption coefficient spectrum obtained shows all films exhibit very low absorption in the visible (400-800 nm) and near infrared (NIR) (>800 nm) range but exhibit high absorption in the UV range.

  1. Industrial study of iron oxide reduction by injection of carbon particles into the electric arc furnace

    International Nuclear Information System (INIS)

    Conejo, A. N.; Torres, R.; Cuellar, E.

    1999-01-01

    An industrial study was conducted in electric arc furnaces (EAF) employing 100% direct reduced iron to evaluate the oxidation level of the slag-metal system. Energy consumption is decreased by injecting gaseous oxygen, however, slag oxidation also increases. In order to reduce the extent of oxidation while keeping a high volume of the oxygen injected , it is required: a) to optimize the carbon injection practice, b) to increase the carbon concentration of sponge iron, c) to operate with soluble carbon in both the metal and the slag beyond a critical level and d) to employ a low temperature profile, on average 1,650 degree centigrade. A method to define the proper amount of carbon in sponge iron which considers their metallization as well as the amount of oxygen injected is proposed. The position of the lance is critical in order to optimize the practice of carbon injection and assure a better residence time of the carbon particles within the furnace. (Author) 23 refs

  2. Effect of Pulsed Electric Field on Membrane Lipids and Oxidative Injury of Salmonella typhimurium.

    Science.gov (United States)

    Yun, Ou; Zeng, Xin-An; Brennan, Charles S; Han, Zhong

    2016-08-22

    Salmonella typhimurium cells were subjected to pulsed electric field (PEF) treatment at 25 kV/cm for 0-4 ms to investigate the effect of PEF on the cytoplasmic membrane lipids and oxidative injury of cells. Results indicated that PEF treatment induced a decrease of membrane fluidity of Salmonella typhimurium (S. typhimuriumi), possibly due to the alterations of fatty acid biosynthesis-associated gene expressions (down-regulation of cfa and fabA gene expressions and the up-regulation of fabD gene expression), which, in turn, modified the composition of membrane lipid (decrease in the content ratio of unsaturated fatty acids to saturated fatty acids). In addition, oxidative injury induced by PEF treatment was associated with an increase in the content of malondialdehyde. The up-regulation of cytochrome bo oxidase gene expressions (cyoA, cyoB, and cyoC) indicated that membrane damage was induced by PEF treatment, which was related to the repairing mechanism of alleviating the oxidative injury caused by PEF treatment. Based on these results, we achieved better understanding of microbial injury induced by PEF, suggesting that micro-organisms tend to decrease membrane fluidity in response to PEF treatment and, thus, a greater membrane fluidity might improve the efficiency of PEF treatment to inactivate micro-organisms.

  3. Compositional influence on the electrical performance of zinc indium tin oxide transparent thin-film transistors

    International Nuclear Information System (INIS)

    Marsal, A.; Carreras, P.; Puigdollers, J.; Voz, C.; Galindo, S.; Alcubilla, R.; Bertomeu, J.; Antony, A.

    2014-01-01

    In this work, zinc indium tin oxide layers with different compositions are used as the active layer of thin film transistors. This multicomponent transparent conductive oxide is gaining great interest due to its reduced content of the scarce indium element. Experimental data indicate that the incorporation of zinc promotes the creation of oxygen vacancies, which results in a higher free carrier density. In thin-film transistors this effect leads to a higher off current and threshold voltage values. The field-effect mobility is also strongly degraded, probably due to coulomb scattering by ionized defects. A post deposition annealing in air reduces the density of oxygen vacancies and improves the field-effect mobility by orders of magnitude. Finally, the electrical characteristics of the fabricated thin-film transistors have been analyzed to estimate the density of states in the gap of the active layers. These measurements reveal a clear peak located at 0.3 eV from the conduction band edge that could be attributed to oxygen vacancies. - Highlights: • Zinc promotes the creation of oxygen vacancies in zinc indium tin oxide transistors. • Post deposition annealing in air reduces the density of oxygen. • Density of states reveals a clear peak located at 0.3 eV from the conduction band

  4. Method and apparatus for bistable optical information storage for erasable optical disks

    Science.gov (United States)

    Land, Cecil E.; McKinney, Ira D.

    1990-01-01

    A method and an optical device for bistable storage of optical information, together with reading and erasure of the optical information, using a photoactivated shift in a field dependent phase transition between a metastable or a bias-stabilized ferroelectric (FE) phase and a stable antiferroelectric (AFE) phase in an lead lanthanum zirconate titanate (PLZT). An optical disk contains the PLZT. Writing and erasing of optical information can be accomplished by a light beam normal to the disk. Reading of optical information can be accomplished by a light beam at an incidence angle of 15 to 60 degrees to the normal of the disk.

  5. Erasing the methyl mark: histone demethylases at the center of cellular differentiation and disease

    DEFF Research Database (Denmark)

    Cloos, Paul A C; Christensen, Jesper; Agger, Karl

    2008-01-01

    The enzymes catalyzing lysine and arginine methylation of histones are essential for maintaining transcriptional programs and determining cell fate and identity. Until recently, histone methylation was regarded irreversible. However, within the last few years, several families of histone...... demethylases erasing methyl marks associated with gene repression or activation have been identified, underscoring the plasticity and dynamic nature of histone methylation. Recent discoveries have revealed that histone demethylases take part in large multiprotein complexes synergizing with histone deacetylases......, histone methyltransferases, and nuclear receptors to control developmental and transcriptional programs. Here we review the emerging biochemical and biological functions of the histone demethylases and discuss their potential involvement in human diseases, including cancer....

  6. An electrically reprogrammable 1024 bits MNOS ROM using MNOS-SOS e/d technology

    International Nuclear Information System (INIS)

    Mackowiak, E.; Le Goascoz, V.

    1976-01-01

    A 1024 bits fully decoded electrically writable and erasable non volatile ROM is described. Memory cells and peripheral circuits are made using P channel silicon on sapphire enhancement depletion technology [fr

  7. Method of depositing an electrically conductive oxide film on a textured metallic substrate and articles formed therefrom

    Science.gov (United States)

    Christen, David K.; He, Qing

    2001-01-01

    The present invention provides a biaxially textured laminate article having a polycrystalline biaxially textured metallic substrate with an electrically conductive oxide layer epitaxially deposited thereon and methods for producing same. In one embodiment a biaxially texture Ni substrate has a layer of LaNiO.sub.3 deposited thereon. An initial layer of electrically conductive oxide buffer is epitaxially deposited using a sputtering technique using a sputtering gas which is an inert or forming gas. A subsequent layer of an electrically conductive oxide layer is then epitaxially deposited onto the initial layer using a sputtering gas comprising oxygen. The present invention will enable the formation of biaxially textured devices which include HTS wires and interconnects, large area or long length ferromagnetic and/or ferroelectric memory devices, large area or long length, flexible light emitting semiconductors, ferroelectric tapes, and electrodes.

  8. Producing nitric oxide by pulsed electrical discharge in air for portable inhalation therapy.

    Science.gov (United States)

    Yu, Binglan; Muenster, Stefan; Blaesi, Aron H; Bloch, Donald B; Zapol, Warren M

    2015-07-01

    Inhalation of nitric oxide (NO) produces selective pulmonary vasodilation and is an effective therapy for treating pulmonary hypertension in adults and children. In the United States, the average cost of 5 days of inhaled NO for persistent pulmonary hypertension of the newborn is about $14,000. NO therapy involves gas cylinders and distribution, a complex delivery device, gas monitoring and calibration equipment, and a trained respiratory therapy staff. The objective of this study was to develop a lightweight, portable device to serve as a simple and economical method of producing pure NO from air for bedside or portable use. Two NO generators were designed and tested: an offline NO generator and an inline NO generator placed directly within the inspiratory line. Both generators use pulsed electrical discharges to produce therapeutic range NO (5 to 80 parts per million) at gas flow rates of 0.5 to 5 liters/min. NO was produced from air, as well as gas mixtures containing up to 90% O2 and 10% N2. Potentially toxic gases produced in the plasma, including nitrogen dioxide (NO2) and ozone (O3), were removed using a calcium hydroxide scavenger. An iridium spark electrode produced the lowest ratio of NO2/NO. In lambs with acute pulmonary hypertension, breathing electrically generated NO produced pulmonary vasodilation and reduced pulmonary arterial pressure and pulmonary vascular resistance index. In conclusion, electrical plasma NO generation produces therapeutic levels of NO from air. After scavenging to remove NO2 and O3 and filtration to remove particles, electrically produced NO can provide safe and effective treatment of pulmonary hypertension. Copyright © 2015, American Association for the Advancement of Science.

  9. Characterization and Electrical Response to Humidity of Sintered Polymeric Electrospun Fibers of Vanadium Oxide-({TiO}_{{2}} /{WO}_{{3}} )

    Science.gov (United States)

    Araújo, E. S.; Libardi, J.; Faia, P. M.; de Oliveira, H. P.

    2018-02-01

    Metal oxide composites have attracted much consideration due to their promising applications in humidity sensors in response to the physical and chemical property modifications of the resulting materials. This work focused on the preparation, microstructural characterization and analysis of humidity-dependent electrical properties of undoped and vanadium oxide (V2O5)-doped titanium oxide/tungsten oxide (TiO2/WO3) sintered ceramic films obtained by electrospinning. The electrical properties were investigated by impedance spectroscopy (400 Hz-40 MHz) as a function of relative humidity (RH). The results revealed a typical transition in the transport mechanisms controlled by the appropriated doping level of V2O5, which introduces important advantages to RH detection due to the atomic substitution of titanium by vanadium atoms in highly doped structures. These aspects are directly related to the microstructure modification and structure fabrication procedure.

  10. Effect of oxidizer on grain size and low temperature DC electrical conductivity of tin oxide nanomaterial synthesized by gel combustion method

    International Nuclear Information System (INIS)

    Rajeeva, M. P.; Jayanna, H. S.; Ashok, R. L.; Naveen, C. S.; Bothla, V. Prasad

    2014-01-01

    Nanocrystalline Tin oxide material with different grain size was synthesized using gel combustion method by varying the fuel (C 6 H 8 O 7 ) to oxidizer (HNO 3 ) molar ratio by keeping the amount of fuel as constant. The prepared samples were characterized by using X-Ray Diffraction (XRD), Scanning Electron Microscope (SEM) and Energy Dispersive Analysis X-ray Spectroscopy (EDAX). The effect of fuel to oxidizer molar ratio in the gel combustion method was investigated by inspecting the grain size of nano SnO 2 powder. The grain size was found to be reduced with the amount of oxidizer increases from 0 to 6 moles in the step of 2. The X-ray diffraction patterns of the calcined product showed the formation of high purity tetragonal tin (IV) oxide with the grain size in the range of 12 to 31 nm which was calculated by Scherer's formula. Molar ratio and temperature dependence of DC electrical conductivity of SnO 2 nanomaterial was studied using Keithley source meter. DC electrical conductivity of SnO 2 nanomaterial increases with the temperature from 80K to 300K. From the study it was observed that the DC electrical conductivity of SnO 2 nanomaterial decreases with the grain size at constant temperature

  11. Crack density and electrical resistance in indium-tin-oxide/polymer thin films under cyclic loading

    KAUST Repository

    Mora Cordova, Angel

    2014-11-01

    Here, we propose a damage model that describes the degradation of the material properties of indium-tin-oxide (ITO) thin films deposited on polymer substrates under cyclic loading. We base this model on our earlier tensile test model and show that the new model is suitable for cyclic loading. After calibration with experimental data, we are able to capture the stress-strain behavior and changes in electrical resistance of ITO thin films. We are also able to predict the crack density using calibrations from our previous model. Finally, we demonstrate the capabilities of our model based on simulations using material properties reported in the literature. Our model is implemented in the commercially available finite element software ABAQUS using a user subroutine UMAT.[Figure not available: see fulltext.].

  12. Ultra High Electrical Performance of Nano Nickel Oxide and Polyaniline Composite Materials

    Directory of Open Access Journals (Sweden)

    Xiaomin Cai

    2017-07-01

    Full Text Available The cooperative effects between the PANI (polyaniline/nano-NiO (nano nickel oxide composite electrode material and redox electrolytes (potassium iodide, KI for supercapacitor applications was firstly discussed in this article, providing a novel method to prepare nano-NiO by using β-cyelodextrin (β-CD as the template agent. The experimental results revealed that the composite electrode processed a high specific capacitance (2122.75 F·g−1 at 0.1 A·g−1 in 0.05 M KI electrolyte solution, superior energy density (64.05 Wh·kg−1 at 0.2 A·g−1 in the two-electrode system and excellent cycle performance (86% capacitance retention after 1000 cycles at 1.5 A·g−1. All those ultra-high electrical performances owe to the KI active material in the electrolyte and the PANI coated nano-NiO structure.

  13. Free volume dependence on electrical properties of Poly (styrene co-acrylonitrile)/Nickel oxide polymer nanocomposites

    Science.gov (United States)

    Ningaraju, S.; Hegde, Vinayakaprasanna N.; Prakash, A. P. Gnana; Ravikumar, H. B.

    2018-04-01

    Polymer nanocomposites of Poly (styrene co-acrylonitrile)/Nickel Oxide (PSAN/NiO) have been prepared. The increased free volume sizes up to 0.4 wt% of NiO loading indicates overall reduction in packing density of polymer network. The decreased o-Ps lifetime (τ3) at higher concentration of NiO indicates improved interfacial interaction between the surface of NiO nanoparticles and side chain of PSAN polymer matrix. The increased AC/DC conductivity at lower wt% of NiO loading demonstrates increased number of electric charge carriers/mobile ions and their mobility. The increased dielectric constant and dielectric loss up to 0.4 wt% of NiO loading suggests the increased dipoles polarization.

  14. Doubly tagged delayed-choice tunable quantum eraser: coherence, information and measurement

    Science.gov (United States)

    Imran, Muhammad; Tariq, Hinna; Rameez-ul-Islam; Ikram, Manzoor

    2018-01-01

    We present an idea for the doubly tagged delayed-choice tunable quantum eraser in a cavity QED setup, based on fully controlled resonant as well as dispersive atom-field interactions. Two cavity fields, bound initially in the Bell state, are coupled to a three-level atom. Such an atom is initially prepared in the coherent superposition of the lower two levels and is quite capable of exhibiting Ramsey fringes if taken independently. It is shown that the coherence lost due to tagging can not only be retrieved but that the fringe visibility/path distinguishability can also be conditionally tuned in a delayed manner through local manipulation of the entangled cavity fields. The stringent condition here is the retainment of the system’s coherence during successive manipulations of the individual cavity fields. Such a quantum eraser, therefore, prominently highlights the links among all the counterintuitive features of quantum theory including the conception of time, measurement, state vector reduction, coherence and information in an unambiguous manner. The schematics can be straightforwardly extended to a multipartite scenario and employed to explore multi-player quantum games with the payoff being strangely decided through delayed choice setups.

  15. A non-erasable magnetic memory based on the magnetic permeability

    International Nuclear Information System (INIS)

    Petrie, J.R.; Wieland, K.A.; Burke, R.A.; Newburgh, G.A.; Burnette, J.E.; Fischer, G.A.; Edelstein, A.S.

    2014-01-01

    A non-erasable memory based on using differences in the magnetic permeability is demonstrated. The method can potentially store information indefinitely. Initially the high permeability bits were 10–50 μm wide lines of sputtered permalloy (Ni 81 Fe 19 ) on a glass substrate. In a second writing technique a continuous film of amorphous, high permeability ferromagnetic Metglas (Fe 78 Si 13 B 9 ) was sputtered onto a similar glass substrate. Low permeability, crystalline 50 μm wide lines were then written in the film by laser heating. Both types of written media were read by applying an external probe field that is locally modified by the permeability of each bit. The modifications in the probe field were read by a nearby set of 10 micron wide magnetic tunnel junctions with a signal-to-noise ratio of up to 45 dB. This large response to changes in bit permeability is not altered after the media has been exposed to a 6400 Oe field. While being immediately applicable for data archiving and secure information storage, higher densities are possible with smaller read and write heads. - Highlights: • We demonstrate a non-erasable memory based on changes in the magnetic permeability. • Large change in permeability occur when Metglas changes from amorphous to crystalline. • Micron size regions of Metglas can be crystallized using a laser. • Permeability changes read by observing deviations of a probe field with an MTJ

  16. Low-Temperature Reduction of Graphene Oxide: Electrical Conductance and Scanning Kelvin Probe Force Microscopy

    Science.gov (United States)

    Slobodian, Oleksandr M.; Lytvyn, Peter M.; Nikolenko, Andrii S.; Naseka, Victor M.; Khyzhun, Oleg Yu.; Vasin, Andrey V.; Sevostianov, Stanislav V.; Nazarov, Alexei N.

    2018-05-01

    Graphene oxide (GO) films were formed by drop-casting method and were studied by FTIR spectroscopy, micro-Raman spectroscopy (mRS), X-ray photoelectron spectroscopy (XPS), four-points probe method, atomic force microscopy (AFM), and scanning Kelvin probe force (SKPFM) microscopy after low-temperature annealing at ambient conditions. It was shown that in temperature range from 50 to 250 °C the electrical resistivity of the GO films decreases by seven orders of magnitude and is governed by two processes with activation energies of 6.22 and 1.65 eV, respectively. It was shown that the first process is mainly associated with water and OH groups desorption reducing the thickness of the film by 35% and causing the resistivity decrease by five orders of magnitude. The corresponding activation energy is the effective value determined by desorption and electrical connection of GO flakes from different layers. The second process is mainly associated with desorption of oxygen epoxy and alkoxy groups connected with carbon located in the basal plane of GO. AFM and SKPFM methods showed that during the second process, first, the surface of GO plane is destroyed forming nanostructured surface with low work function and then at higher temperature a flat carbon plane is formed that results in an increase of the work function of reduced GO.

  17. Novel electrical energy storage system based on reversible solid oxide cells: System design and operating conditions

    Science.gov (United States)

    Wendel, C. H.; Kazempoor, P.; Braun, R. J.

    2015-02-01

    Electrical energy storage (EES) is an important component of the future electric grid. Given that no other widely available technology meets all the EES requirements, reversible (or regenerative) solid oxide cells (ReSOCs) working in both fuel cell (power producing) and electrolysis (fuel producing) modes are envisioned as a technology capable of providing highly efficient and cost-effective EES. However, there are still many challenges and questions from cell materials development to system level operation of ReSOCs that should be addressed before widespread application. This paper presents a novel system based on ReSOCs that employ a thermal management strategy of promoting exothermic methanation within the ReSOC cell-stack to provide thermal energy for the endothermic steam/CO2 electrolysis reactions during charging mode (fuel producing). This approach also serves to enhance the energy density of the stored gases. Modeling and parametric analysis of an energy storage concept is performed using a physically based ReSOC stack model coupled with thermodynamic system component models. Results indicate that roundtrip efficiencies greater than 70% can be achieved at intermediate stack temperature (680 °C) and elevated stack pressure (20 bar). The optimal operating condition arises from a tradeoff between stack efficiency and auxiliary power requirements from balance of plant hardware.

  18. Nonlinear system identification of the reduction nickel oxide smelting process in electric arc furnace

    Science.gov (United States)

    Gubin, V.; Firsov, A.

    2018-03-01

    As the title implies the article describes the nonlinear system identification of the reduction smelting process of nickel oxide in electric arc furnaces. It is suggested that for operational control ratio of components of the charge must be solved the problem of determining the qualitative composition of the melt in real time. The use of 0th harmonic of phase voltage AC furnace as an indirect measure of the melt composition is proposed. Brief description of the mechanism of occurrence and nature of the non-zero 0th harmonic of the AC voltage of the arc is given. It is shown that value of 0th harmonic of the arc voltage is not function of electrical parameters but depends of the material composition of the melt. Processed industrial data are given. Hammerstein-Wiener model is used for description of the dependence of 0th harmonic of the furnace voltage from the technical parameters of melting furnace: the melt composition and current. Recommendations are given about the practical use of the model.

  19. [Efficiency of oxidant gas generator cells powered by electric or solar energy].

    Science.gov (United States)

    Brust Carmona, H; Benitez, A; Zarco, J; Sánchez, E; Mascher, I

    1998-02-01

    Diseases caused by microbial contaminants in drinking water continue to be a serious problem in countries like Mexico. Chlorination, using chlorine gas or chlorine compounds, is one of the best ways to treat drinking water. However, difficulties in handling chlorine gas and the inefficiency of hypochlorite solution dosing systems--due to sociopolitical, economic, and cultural factors--have reduced the utility of these chlorination procedures, especially in far-flung and inaccessible rural communities. These problems led to the development of appropriate technologies for the disinfection of water by means of the on-site generation of mixed oxidant gases (chlorine and ozone). This system, called MOGGOD, operates through the electrolysis of a common salt solution. Simulated system evaluation using a hydraulic model allowed partial and total costs to be calculated. When powered by electrical energy from the community power grid, the system had an efficiency of 90%, and in 10 hours it was able to generate enough gases to disinfect about 200 m3 of water at a cost of approximately N$8 (US $1.30). When the electrolytic cell was run on energy supplied through a photoelectric cell, the investment costs were higher. A system fed by photovoltaic cells could be justified in isolated communities that lack electricity but have a gravity-fed water distribution system.

  20. Optical and Electrical Properties of Copper Oxide Thin Films Synthesized by Spray Pyrolysis Technique

    Directory of Open Access Journals (Sweden)

    S. S. Roy

    2015-08-01

    Full Text Available Copper oxide (CuO thin films have been synthesized on to glass substrates at different temperatures in the range 250-450 °C by spray pyrolysis technique from aqueous solution using cupric acetate Cu(CH3COO2·H2O as a precursor. The structure of the deposited CuO thin films characterized by X-ray diffraction, the surface morphology was observed by a scanning electron microscope, the presence of elements was detected by energy dispersive X-ray analysis, the optical transmission spectra was recorded by ultraviolet-visible spectroscopy and electrical resistivity was studied by Van-der Pauw method. All the CuO thin films, irrespective of growth temperature, showed a monoclinic structure with the main CuO (111 orientation, and the crystallite size was about 8.4784 Å for the thin film synthesized at 350 °C. The optical transmission of the as-deposited film is found to decrease with the increase of substrate temperature, the optical band gap of the thin films varies from 1.90 to 1.60 eV and the room temperature electrical resistivity varies from 30 to18 Ohm·cm for the films grown at different substrate temperatures.

  1. Effect of cerium oxide addition on electrical properties of ZnO

    Energy Technology Data Exchange (ETDEWEB)

    Ibrahim, D.M. [National Research Center, Dokki, Giza (Egypt). Dept. of Ceramics; Mounir, M. [Dept. of Physics, Cairo Univ., Giza (Egypt); Mahgoub, A.S. [Cairo Univ., Giza (Egypt). Dept. of Chemistry; Turky, G. [Dept. of Physics, National Research Center, Dokki, Giza (Egypt); El-Desouky, O.A. [Cer. Cleopatra Co., Ramadan City (Egypt)

    2002-07-01

    Mixtures of ZnO and Ce{sub 6} O{sub 11} as additive were prepared by solid state reaction from the calcined oxides with the following proportions: 0.03, 0.08, 0.1, 0.2 and 0.4 mole. Disc specimens 1.2 cm 5 cm in diameter and 0.3 cm thickness were processed under a force of 70 kN and fired at 1150 C/ 30 minutes. XRD revealed the presence of limited solid solution of cerium in ZnO, as evident from the shift in the peaks [0.03-0.04 A ] up to 0.1 mole addition and remains constant. SEM revealed the presence of inter-granular phase. EDAX showed it to be a mixture of ZnO and Ce{sub 6}O{sub 11}. Also cerium was detected in the ZnO grains confirming the XRD results. RCL circuit was used to measure the capacitance and resistance at different frequencies at room temperature. The dielectric constant and conductivity were calculated. The change in resistivity with temperature was followed up to 523 K. The change in dielectric strength with temperature at spot frequency of 10 kHz is demonstrated. The electrical conductivity was found to increase with the proportion of cerium oxide up to 0.2 mole then decreased. (orig.)

  2. Electrical properties of aluminum-doped zinc oxide (AZO) nanoparticles synthesized by chemical vapor synthesis

    International Nuclear Information System (INIS)

    Hartner, Sonja; Schulz, Christof; Wiggers, Hartmut; Ali, Moazzam; Winterer, Markus

    2009-01-01

    Aluminum-doped zinc oxide nanoparticles have been prepared by chemical vapor synthesis, which facilitates the incorporation of a higher percentage of dopant atoms, far above the thermodynamic solubility limit of aluminum. The electrical properties of aluminum-doped and undoped zinc oxide nanoparticles were investigated by impedance spectroscopy. The impedance is measured under hydrogen and synthetic air between 323 and 673 K. The measurements under hydrogen as well as under synthetic air show transport properties depending on temperature and doping level. Under hydrogen atmosphere, a decreasing conductivity with increasing dopant content is observed, which can be explained by enhanced scattering processes due to an increasing disorder in the nanocrystalline material. The temperature coefficient for the doped samples switches from positive temperature coefficient behavior to negative temperature coefficient behavior with increasing dopant concentration. In the presence of synthetic air, the conductivity firstly increases with increasing dopant content by six orders of magnitude. The origin of the increasing conductivity is the generation of free charge carriers upon dopant incorporation. It reaches its maximum at a concentration of 7.7% of aluminum, and drops for higher doping levels. In all cases, the conductivity under hydrogen is higher than under synthetic air and can be changed reversibly by changing the atmosphere.

  3. Electrical properties of aluminum-doped zinc oxide (AZO) nanoparticles synthesized by chemical vapor synthesis.

    Science.gov (United States)

    Hartner, Sonja; Ali, Moazzam; Schulz, Christof; Winterer, Markus; Wiggers, Hartmut

    2009-11-04

    Aluminum-doped zinc oxide nanoparticles have been prepared by chemical vapor synthesis, which facilitates the incorporation of a higher percentage of dopant atoms, far above the thermodynamic solubility limit of aluminum. The electrical properties of aluminum-doped and undoped zinc oxide nanoparticles were investigated by impedance spectroscopy. The impedance is measured under hydrogen and synthetic air between 323 and 673 K. The measurements under hydrogen as well as under synthetic air show transport properties depending on temperature and doping level. Under hydrogen atmosphere, a decreasing conductivity with increasing dopant content is observed, which can be explained by enhanced scattering processes due to an increasing disorder in the nanocrystalline material. The temperature coefficient for the doped samples switches from positive temperature coefficient behavior to negative temperature coefficient behavior with increasing dopant concentration. In the presence of synthetic air, the conductivity firstly increases with increasing dopant content by six orders of magnitude. The origin of the increasing conductivity is the generation of free charge carriers upon dopant incorporation. It reaches its maximum at a concentration of 7.7% of aluminum, and drops for higher doping levels. In all cases, the conductivity under hydrogen is higher than under synthetic air and can be changed reversibly by changing the atmosphere.

  4. Effect of Zinc Oxide Doping on Electroluminescence and Electrical Behavior of Metalloporphyrins-Doped Samarium Complex

    Science.gov (United States)

    Janghouri, Mohammad; Amini, Mostafa M.

    2018-02-01

    Samarium complex [(Sm(III)] as a new host material was used for preparation of red organic light-emitting diodes (OLEDs). Devices with configurations of indium-doped tin oxide (ITO)/poly(3,4-ethylenedioxythiophene):(poly(styrenesulfonate) (PEDOT:PSS (50 nm)/polyvinyl carbazole (PVK):[zinc oxide (ZnO)] (50 nm)/[(Sm(III)]:[zinc(II) 2,3-tetrakis(dihydroxyphenyl)-porphyrin and Pt(II) 2,3-dimethoxyporphyrin] (60 nm)/2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline (BCP) (15 nm)/Al (150 nm) have been fabricated and investigated. An electroplex occurring at the (PVK/Sm: Pt(II) 2,3-dimethoxyporphyrin) interface has been suggested when ZnO nanoparticles were doped in PVK. OLED studies have revealed that the photophysical characteristics and electrical behavior of devices with ZnO nanoparticles are much better than those of devices with pure PVK. The efficiency of devices based on [(Sm(III)] was superior than that of known aluminum tris(8-hydroxyquinoline) (Alq3) and also our earlier reports on red OLEDs under the same conditions.

  5. Electrical and Optical Properties of Fluorine Doped Tin Oxide Thin Films Prepared by Magnetron Sputtering

    Directory of Open Access Journals (Sweden)

    Ziad Y. Banyamin

    2014-10-01

    Full Text Available Fluorine doped tin oxide (FTO coatings have been prepared using the mid-frequency pulsed DC closed field unbalanced magnetron sputtering technique in an Ar/O2 atmosphere using blends of tin oxide and tin fluoride powder formed into targets. FTO coatings were deposited with a thickness of 400 nm on glass substrates. No post-deposition annealing treatments were carried out. The effects of the chemical composition on the structural (phase, grain size, optical (transmission, optical band-gap and electrical (resistivity, charge carrier, mobility properties of the thin films were investigated. Depositing FTO by magnetron sputtering is an environmentally friendly technique and the use of loosely packed blended powder targets gives an efficient means of screening candidate compositions, which also provides a low cost operation. The best film characteristics were achieved using a mass ratio of 12% SnF2 to 88% SnO2 in the target. The thin film produced was polycrystalline with a tetragonal crystal structure. The optimized conditions resulted in a thin film with average visible transmittance of 83% and optical band-gap of 3.80 eV, resistivity of 6.71 × 10−3 Ω·cm, a carrier concentration (Nd of 1.46 × 1020 cm−3 and a mobility of 15 cm2/Vs.

  6. Characterization of the physical and electrical properties of Indium tin oxide on polyethylene napthalate

    International Nuclear Information System (INIS)

    Han, H.; Adams, Daniel; Mayer, J.W.; Alford, T.L.

    2005-01-01

    Indium tin oxide (ITO) thin films, on polyethylene napthalate (PEN) of both good electrical and optical properties were obtained by radio-frequency sputtering. The optoelectronic properties of the ITO films on PEN substrate were evaluated in terms of the oxygen content and the surface morphology. Rutherford backscattering spectrometry analysis was used to determine the oxygen content in the film. Hall-effect measurements were used to evaluate the dependence of electrical properties on oxygen content. The results showed that the resistivity of the ITO film increases with increasing oxygen content. For an oxygen content of 1.6x10 18 -2.48x10 18 atoms/cm 2 , the resistivity varied from 0.38x10 -2 to 1.86x10 -2 Ω cm. Typical resistivities were about ∼10 -3 Ω cm. UV-Vis spectroscopy and atomic force microscopy measurements were used to determine the optical transmittance and surface roughness of ITO films, respectively. Optical transmittances of ∼85% were obtained for the ITO thin films. Our results revealed that substrate roughness were translated onto the deposited ITO thin layers. The ITO surface roughness influences both the optical and electrical properties of the thin films. For a 125 μm PEN substrate the roughness is 8.4 nm, whereas it is 3.2 nm for 200 μm substrate thicknesses. The optical band gap is about 3.15 eV for all ITO film and is influenced by the polymer substrate. A model is proposed that the optical transmittance in the visible region is governed by the carrier concentration in the ITO thin films

  7. Detection and removal of impurities in nitric oxide generated from air by pulsed electrical discharge.

    Science.gov (United States)

    Yu, Binglan; Blaesi, Aron H; Casey, Noel; Raykhtsaum, Grigory; Zazzeron, Luca; Jones, Rosemary; Morrese, Alexander; Dobrynin, Danil; Malhotra, Rajeev; Bloch, Donald B; Goldstein, Lee E; Zapol, Warren M

    2016-11-30

    Inhalation of nitric oxide (NO) produces selective pulmonary vasodilation without dilating the systemic circulation. However, the current NO/N 2 cylinder delivery system is cumbersome and expensive. We developed a lightweight, portable, and economical device to generate NO from air by pulsed electrical discharge. The objective of this study was to investigate and optimize the purity and safety of NO generated by this device. By using low temperature streamer discharges in the plasma generator, we produced therapeutic levels of NO with very low levels of nitrogen dioxide (NO 2 ) and ozone. Despite the low temperature, spark generation eroded the surface of the electrodes, contaminating the gas stream with metal particles. During prolonged NO generation there was gradual loss of the iridium high-voltage tip (-90 μg/day) and the platinum-nickel ground electrode (-55 μg/day). Metal particles released from the electrodes were trapped by a high-efficiency particulate air (HEPA) filter. Quadrupole mass spectroscopy measurements of effluent gas during plasma NO generation showed that a single HEPA filter removed all of the metal particles. Mice were exposed to breathing 50 parts per million of electrically generated NO in air for 28 days with only a scavenger and no HEPA filter; the mice did not develop pulmonary inflammation or structural changes and iridium and platinum particles were not detected in the lungs of these mice. In conclusion, an electric plasma generator produced therapeutic levels of NO from air; scavenging and filtration effectively eliminated metallic impurities from the effluent gas. Copyright © 2016 Elsevier Inc. All rights reserved.

  8. Formation of ZnO at zinc oxidation by near- and supercritical water under the constant electric field

    Science.gov (United States)

    Shishkin, A. V.; Sokol, M. Ya.; Shatrova, A. V.; Fedyaeva, O. N.; Vostrikov, A. A.

    2014-12-01

    The work has detected an influence of a constant electric field (up to E = 300 kV/m) on the structure of a nanocrystalline layer of zinc oxide, formed on the surface of a planar zinc anode in water under supercritical (673 K and 23 MPa) and near-critical (673 K and 17. 5 MPa) conditions. The effect of an increase of zinc oxidation rate with an increase in E is observed under supercritical conditions and is absent at near-critical ones. Increase in the field strength leads to the formation of a looser structure in the inner part of the zinc oxide layer.

  9. Low-temperature aluminum reduction of graphene oxide, electrical properties, surface wettability, and energy storage applications.

    Science.gov (United States)

    Wan, Dongyun; Yang, Chongyin; Lin, Tianquan; Tang, Yufeng; Zhou, Mi; Zhong, Yajuan; Huang, Fuqiang; Lin, Jianhua

    2012-10-23

    Low-temperature aluminum (Al) reduction is first introduced to reduce graphene oxide (GO) at 100-200 °C in a two-zone furnace. The melted Al metal exhibits an excellent deoxygen ability to produce well-crystallized reduced graphene oxide (RGO) papers with a low O/C ratio of 0.058 (Al-RGO), compared with 0.201 in the thermally reduced one (T-RGO). The Al-RGO papers possess outstanding mechanical flexibility and extremely high electrical conductivities (sheet resistance R(s) ~ 1.75 Ω/sq), compared with 20.12 Ω/sq of T-RGO. More interestingly, very nice hydrophobic nature (90.5°) was observed, significantly superior to the reported chemically or thermally reduced papers. These enhanced properties are attributed to the low oxygen content in the RGO papers. During the aluminum reduction, highly active H atoms from H(2)O reacted with melted Al promise an efficient oxygen removal. This method was also applicable to reduce graphene oxide foams, which were used in the GO/SA (stearic acid) composite as a highly thermally conductive reservoir to hold the phase change material for thermal energy storage. The Al-reduced RGO/SnS(2) composites were further used in an anode material of lithium ion batteries possessing a higher specific capacity. Overall, low-temperature Al reduction is an effective method to prepare highly conductive RGO papers and related composites for flexible energy conversion and storage device applications.

  10. Tuning the Electrical and Thermal Conductivities of Thermoelectric Oxides through Impurity Doping

    Science.gov (United States)

    Torres Arango, Maria A.

    Waste heat and thermal gradients available at power plants can be harvested to power wireless networks and sensors by using thermoelectric (TE) generators that directly transform temperature differentials into electrical power. Oxide materials are promising for TE applications in harsh industrial environments for waste heat recovery at high temperatures in air, because they are lightweight, cheaply produced, highly efficient, and stable at high temperatures in air. Ca3Co4O9(CCO) with layered structure is a promising p-type thermoelectric oxide with extrapolated ZT value of 0.87 in single crystal form [1]. However the ZT values for the polycrystalline ceramics remain low of ˜0.1-0.3. In this research, nanostructure engineering approaches including doping and addition of nanoinclusions were applied to the polycrystalline CCO ceramic to improve the energy conversion efficiency. Polycrystalline CCO samples with various Bi doping levels were prepared through the sol-gel chemical route synthesis of powders, pressing and sintering of the pellets. Microstructure features of Bi doped ceramic bulk samples such as porosity, development of crystal texture, grain boundary dislocations and segregation of Bi dopants at various grain boundaries are investigated from microns to atomic scale. The results of the present study show that the Bi-doping is affecting both the electrical conductivity and thermal conductivity simultaneously, and the optimum Bi doping level is strongly correlated with the microstructure and the processing conditions of the ceramic samples. At the optimum doping level and processing conditions of the ceramic samples, the Bi substitution of Ca results in the increase of the electrical conductivity, decrease of the thermal conductivity, and improvement of the crystal texture. The atomic resolution Scanning Transmission Electron Microscopy (STEM) Z-contrast imaging and the chemistry analysis also reveal the Bi-segregation at grain boundaries of CCO

  11. Electricity

    CERN Document Server

    Basford, Leslie

    2013-01-01

    Electricity Made Simple covers the fundamental principles underlying every aspect of electricity. The book discusses current; resistance including its measurement, Kirchhoff's laws, and resistors; electroheat, electromagnetics and electrochemistry; and the motor and generator effects of electromagnetic forces. The text also describes alternating current, circuits and inductors, alternating current circuits, and a.c. generators and motors. Other methods of generating electromagnetic forces are also considered. The book is useful for electrical engineering students.

  12. A comparison of myogenic motor evoked responses to electrical and magnetic transcranial stimulation during nitrous oxide/opioid anesthesia

    NARCIS (Netherlands)

    Ubags, L. H.; Kalkman, C. J.; Been, H. D.; Koelman, J. H.; Ongerboer de Visser, B. W.

    1999-01-01

    Transcranial motor evoked potentials (tc-MEPs) are used to monitor spinal cord integrity intraoperatively. We compared myogenic motor evoked responses with electrical and magnetic transcranial stimuli during nitrous oxide/opioid anesthesia. In 11 patients undergoing spinal surgery, anesthesia was

  13. The iron and cerium oxide influence on the electric conductivity and the corrosion resistance of anodized aluminium

    International Nuclear Information System (INIS)

    Souza, Kellie Provazi de

    2006-01-01

    The influence of different treatments on the aluminum system covered with aluminum oxide is investigated. The aluminum anodization in sulphuric media and in mixed sulphuric and phosphoric media was used to alter the corrosion resistance, thickness, coverage degree and microhardness of the anodic oxide. Iron electrodeposition inside the anodic oxide was used to change its electric conductivity and corrosion resistance. Direct and pulsed current were used for iron electrodeposition and the Fe(SO 4 ) 2 (NH 4 ) 2 .6H 2 O electrolyte composition was changed with the addition of boric and ascorbic acids. To the sealing treatment the CeCl 3 composition was varied. The energy dispersive x-ray (EDS), the x-ray fluorescence spectroscopy (FRX) and the morphologic analysis by scanning electronic microscopy (SEM) allowed to verify that, the pulsed current increase the iron content inside the anodic layer and that the use of the additives inhibits the iron oxidation. The chronopotentiometric curves obtained during iron electrodeposition indicated that the boric and ascorbic acids mixture increased the electrodeposition process efficiency. The electrochemical impedance spectroscopy (EIE), the Vickers (Hv) microhardness measurements and morphologic analysis evidenced that the sealing treatment improves the corrosion resistance of the anodic film modified with iron. The electrical impedance (EI) technique allowed to prove the electric conductivity increase of the anodized aluminum with iron electrodeposited even after the cerium low concentration treatment. Iron nanowires were prepared by using the anodic oxide pores as template. (author)

  14. Electrical transport properties of manganese containing pyrochlore type semiconducting oxides using impedance analyses

    International Nuclear Information System (INIS)

    Sumi, S.; Prabhakar Rao, P.; Mahesh, S.K.; Koshy, Peter

    2012-01-01

    Graphical abstract: DC conductivity variation of CaCe 1−x Mn x SnNbO 7−δ (x = 0, 0.2, 0.4 and 0.6) with inverse of temperature. Variation of conductivity with Mn concentration at 600 °C is shown in the inset. Display Omitted Highlights: ► We have observed that the structural ordering as well as grain size increase with Mn substitution. ► Impedance analysis proved that a correlated barrier hopping type conduction mechanism is involved in the materials. ► Activation energy as well as electrical conductivity increases with increase in Mn substitution. ► Localization of electrons associated with Mn 2+ and structural ordering are the key factors for the increased activation energy with Mn substitution. ► All the materials showed good NTC thermistor properties. -- Abstract: A new series of manganese containing pyrochlore type semiconducting oxides CaCe 1−x Mn x SnNbO 7−δ (x = 0, 0.2, 0.4 and 0.6) have been synthesized to study the effect of Mn substitution on the structure, microstructure and electrical properties of these samples. X-ray diffraction and scanning electron microscopy studies revealed an increase of structural ordering and grain size respectively with increase of Mn substitution. Rietveld analysis and Raman spectroscopy were also employed to corroborate the XRD results. The bulk resistance measurements with temperature exhibit negative temperature coefficient behavior. The impedance analysis of the samples revealed a non-Debye type relaxation existed in the materials. The ac conductivity variation with temperature and frequency indicates a correlated barrier hopping type conduction mechanism in these materials. The barrier height and the intersite separation for hopping influence the electrical conductivity of these samples and are found to be a function of localization of electrons associated with the Mn 2+ ions and the unit cell volume respectively. The Mn substitution increases both electrical conductivity and activation energy

  15. Interfacial and electrical properties of HfAlO/GaSb metal-oxide-semiconductor capacitors with sulfur passivation

    International Nuclear Information System (INIS)

    Tan Zhen; Zhao Lian-Feng; Wang Jing; Xu Jun

    2014-01-01

    Interfacial and electrical properties of HfAlO/GaSb metal-oxide-semiconductor capacitors (MOSCAPs) with sulfur passivation were investigated and the chemical mechanisms of the sulfur passivation process were carefully studied. It was shown that the sulfur passivation treatment could reduce the interface trap density D it of the HfAlO/GaSb interface by 35% and reduce the equivalent oxide thickness (EOT) from 8 nm to 4 nm. The improved properties are due to the removal of the native oxide layer, as was proven by x-ray photoelectron spectroscopy measurements and high-resolution cross-sectional transmission electron microscopy (HRXTEM) results. It was also found that GaSb-based MOSCAPs with HfAlO gate dielectrics have interfacial properties superior to those using HfO 2 or Al 2 O 3 dielectric layers. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

  16. Influence of oxidation temperature on photoluminescence and electrical properties of amorphous thin film SiC:H:O+Tb

    Energy Technology Data Exchange (ETDEWEB)

    Gordienko, S.O.; Nazarov, A.N.; Rusavsky, A.V.; Vasin, A.V.; Gomeniuk, Yu.V.; Lysenko, V.S.; Strelchuk, V.V.; Nikolaenko, A.S. [Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine, Prospekt Nauki 41, 03028 Kyiv (Ukraine); Ashok, S. [The Pennsylvania State University, Department of Engineering Science, 212 Earth and Engineering Science Bldg., University Park, PA 16802 (United States)

    2011-09-15

    The influence of low-temperature oxidation on chemical composition, luminescent and electrical properties of a-Si{sub 1-x}C{sub x}:H thin films fabricated by reactive RF magnetron sputtering has been studied. A strong dependence on RF sputtering power is seen on the electrical and chemical properties. The a-Si{sub 1-x}C{sub x}:H films fabricated by low RF power levels followed by low-temperature oxidation (at 450 C-500 C) display high intensity of PL, good MOSCV characteristic and low leakage current through the dielectric. Increase of oxidation temperature increases precipitation of carbon nano-inclusions in the materials, that result in reduction of PL intensity and increase of dielectric leakage. (copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  17. Comparative analysis of oxide phase formation and its effects on electrical properties of SiO{sub 2}/InSb metal-oxide-semiconductor structures

    Energy Technology Data Exchange (ETDEWEB)

    Lee, Jaeyel [Department of Materials Science and Engineering, Seoul National University, Seoul 151-744 (Korea, Republic of); Park, Sehun [Department of Materials Science and Engineering, Seoul National University, Seoul 151-744 (Korea, Republic of); WCU Hybrid Materials Program, Department of Materials Science and Engineering, Seoul National University, Seoul 151-744 (Korea, Republic of); Kim, Jungsub; Yang, Changjae; Kim, Sujin; Seok, Chulkyun [Department of Materials Science and Engineering, Seoul National University, Seoul 151-744 (Korea, Republic of); Park, Jinsub [Department of Electronic Engineering, Hanyang University, Seoul 133-791 (Korea, Republic of); Yoon, Euijoon, E-mail: eyoon@snu.ac.kr [Department of Materials Science and Engineering, Seoul National University, Seoul 151-744 (Korea, Republic of); WCU Hybrid Materials Program, Department of Materials Science and Engineering, Seoul National University, Seoul 151-744 (Korea, Republic of); Department of Nano Science and Technology, Graduate School of Convergence Science and Technology, Seoul National University, Suwon 443-270 (Korea, Republic of); Energy Semiconductor Research Center, Advanced Institutes of Convergence Technology, Seoul National University, Suwon 443-270 (Korea, Republic of)

    2012-06-01

    We report on the changes in the interfacial phases between SiO{sub 2} and InSb caused by various deposition temperatures and heat treatments. X-ray photoelectron spectroscopy (XPS) and Raman spectroscopy were used to evaluate the relative amount of each phase present at the interface. The effect of interfacial phases on the electrical properties of SiO{sub 2}/InSb metal-oxide-semiconductor (MOS) structures was investigated by capacitance-voltage (C-V) measurements. The amount of both In and Sb oxides increased with the deposition temperature. The amount of interfacial In oxide was larger for all samples, regardless of the deposition and annealing temperatures and times. In particular, the annealed samples contained less than half the amount of Sb oxide compared with the as-deposited samples, indicating a strong interfacial reaction between Sb oxide and the InSb substrate during annealing. The interface trap density sharply increased for deposition temperatures above 240 Degree-Sign C. The C-V measurements and Raman spectroscopy indicated that elemental Sb accumulation due to the interfacial reaction of Sb oxide with InSb substrate was responsible for the increased interfacial trap densities in these SiO{sub 2}/InSb MOS structures. - Highlights: Black-Right-Pointing-Pointer We report the quantitative analysis of interfacial oxides at the SiO{sub 2}/InSb interface. Black-Right-Pointing-Pointer Interfacial oxides were measured quantitatively by X-ray Photoelectron Spectroscopy. Black-Right-Pointing-Pointer As-grown and annealed samples showed different compositions of oxide phases. Black-Right-Pointing-Pointer Considerable reduction of antimony oxide phases was observed during annealing. Black-Right-Pointing-Pointer Interface trap densities at the SiO{sub 2}/InSb interface were calculated.

  18. Electrical and physical characteristics for crystalline atomic layer deposited beryllium oxide thin film on Si and GaAs substrates

    International Nuclear Information System (INIS)

    Yum, J.H.; Akyol, T.; Lei, M.; Ferrer, D.A.; Hudnall, Todd W.; Downer, M.; Bielawski, C.W.; Bersuker, G.; Lee, J.C.; Banerjee, S.K.

    2012-01-01

    In a previous study, atomic layer deposited (ALD) BeO exhibited less interface defect density and hysteresis, as well as less frequency dispersion and leakage current density, at the same equivalent oxide thickness than Al 2 O 3 . Furthermore, its self-cleaning effect was better. In this study, the physical and electrical characteristics of ALD BeO grown on Si and GaAs substrates are further evaluated as a gate dielectric layer in III–V metal-oxide-semiconductor devices using transmission electron microscopy, selective area electron diffraction, second harmonic generation, and electrical analysis. An as-grown ALD BeO thin film was revealed as a layered single crystal structure, unlike the well-known ALD dielectrics that exhibit either poly-crystalline or amorphous structures. Low defect density in highly ordered ALD BeO film, less variability in electrical characteristics, and great stability under electrical stress were demonstrated. - Highlights: ► BeO is an excellent electrical insulator, but good thermal conductor. ► Highly crystalline film of BeO has been grown using atomic layer deposition. ► An ALD BeO precursor, which is not commercially available, has been synthesized. ► Physical and electrical characteristics have been investigated.

  19. Nanoionics phenomenon in proton-conducting oxide: Effect of dispersion of nanosize platinum particles on electrical conduction properties

    Directory of Open Access Journals (Sweden)

    Hiroshige Matsumoto et al

    2007-01-01

    Full Text Available High-temperature proton conductors are oxides in which low-valence cations are doped as electron acceptors; the incorporation of water molecules into the oxides results in the formation of protonic defects that act as charge carriers. Since the protons thus formed are in equilibrium with other electronic defects, electrons and holes, the oxides possibly have different proton-conduction properties at and near boundaries when they are in contact with another phase. In this paper, we present our recent experimental observation of a marked change in the electrical properties of a proton conductor upon the dispersal of fine platinum particles in the oxide. First, the material shows extremely low electrical conductivity in comparison with the original proton-conducting perovskite. Second, there was a threshold amount of platinum at which such a drop in conductivity occurred. A percolation model is employed to explain these experimental results; the fine platinum particles dispersed in the proton-conducting oxide wears highly resistive skin that is formed due to shifts in defect equilibriums, which prevents ionic/electronic conduction. The experiments suggest that the ion-conducting properties of oxides can be varied by introducing interfaces at a certain density; nanoionics is a key to yielding enhanced and/or controlled ionic conduction in solids.

  20. Efficient reduction of graphene oxide film by low temperature heat treatment and its effect on electrical conductivity

    Energy Technology Data Exchange (ETDEWEB)

    Hu, Xuebing; Chen, Zheng [Jingdezhen Ceramic Institute, Jingdezhen (China). Key Lab. of Inorganic Membrane; Yu, Yun [Shanghai Institute of Ceramics, Shanghai (China). Key Lab. of Inorganic Coating Materials; Zhang, Xiaozhen; Wang, Yongqing; Zhou, Jianer [Jingdezhen Ceramic Institute, Jingdezhen (China). Dept. of Materials Engineering

    2018-03-01

    Graphene-based conductive films have already attracted great attention due to their unique and outstanding physical properties. In this work, in order to develop a novel, effective method to produce these films with good electrical conductivity, a simple and green method is reported to rapidly and effectively reduce graphene oxide film using a low temperature heat treatment. The reduction of graphene oxide film is verified by XRD, FT-IR and Raman spectroscopy. Compared with graphene oxide film, the obtained reduced graphene oxide film has better electrical conductivity and its sheet resistance decreases from 25.3 kΩ x sq{sup -1} to 3.3 kΩ x sq{sup -1} after the heat treatment from 160 to 230 C. The mechanism of thermal reduction of the graphene oxide film mainly results from the removal of the oxygen-containing functional groups and the structural changes. All these results indicate that the low temperature heat treatment is a suitable and effective method for the reduction of graphene oxide film.

  1. Lessons learned from unintended consequences about erasing the stigma of mental illness.

    Science.gov (United States)

    Corrigan, Patrick W

    2016-02-01

    Advocates and scientists have partnered to develop and evaluate programs meant to erase the egregious effects of the different forms of stigma. Enough evidence has been collected to yield lessons about approaches to stigma change. Some of the most insightful of these lessons emerge from unintended consequences of good intentioned approaches, and are the focus of this paper. They include the limited benefits of education especially when compared to contact, beating stigma is more than changing words, beware pity as a message, understand the competing agendas of stigma change, replace ideas of normalcy with solidarity, and avoid framing self-stigma as the problem of people with mental illness and not of society. The paper ends with consideration of the back seat role that psychiatrists and other mental health providers should have in stigma change. © 2015 World Psychiatric Association.

  2. Influence of post-annealing on the electrical properties of metal/oxide/silicon nitride/oxide/silicon capacitors for flash memories

    International Nuclear Information System (INIS)

    Kim, Hee Dong; An, Ho-Myoung; Kim, Kyoung Chan; Seo, Yu Jeong; Kim, Tae Geun

    2008-01-01

    We report the effect of post-annealing on the electrical properties of metal/oxide/silicon nitride/oxide/silicon (MONOS) capacitors. Four samples, namely as-deposited and annealed at 750, 850 and 950 °C for 30 s in nitrogen ambient by a rapid thermal process, were prepared and characterized for comparison. The best performance with the largest memory window of 4.4 V and the fastest program speed of 10 ms was observed for the sample annealed at 850 °C. In addition, the highest traps density of 6.84 × 10 18 cm −3 was observed with ideal trap distributions for the same sample by capacitance–voltage (C–V) measurement. These results indicate that the memory traps in the ONO structure can be engineered by post-annealing to improve the electrical properties of the MONOS device

  3. Erasing and blurring memories: The differential impact of interference on separate aspects of forgetting.

    Science.gov (United States)

    Sun, Sol Z; Fidalgo, Celia; Barense, Morgan D; Lee, Andy C H; Cant, Jonathan S; Ferber, Susanne

    2017-11-01

    Interference disrupts information processing across many timescales, from immediate perception to memory over short and long durations. The widely held similarity assumption states that as similarity between interfering information and memory contents increases, so too does the degree of impairment. However, information is lost from memory in different ways. For instance, studied content might be erased in an all-or-nothing manner. Alternatively, information may be retained but the precision might be degraded or blurred. Here, we asked whether the similarity of interfering information to memory contents might differentially impact these 2 aspects of forgetting. Observers studied colored images of real-world objects, each followed by a stream of interfering objects. Across 4 experiments, we manipulated the similarity between the studied object and the interfering objects in circular color space. After interference, memory for object color was tested continuously on a color wheel, which in combination with mixture modeling, allowed for estimation of how erasing and blurring differentially contribute to forgetting. In contrast to the similarity assumption, we show that highly dissimilar interfering items caused the greatest increase in random guess responses, suggesting a greater frequency of memory erasure (Experiments 1-3). Moreover, we found that observers were generally able to resist interference from highly similar items, perhaps through surround suppression (Experiments 1 and 4). Finally, we report that interference from items of intermediate similarity tended to blur or decrease memory precision (Experiments 3 and 4). These results reveal that the nature of visual similarity can differentially alter how information is lost from memory. (PsycINFO Database Record (c) 2017 APA, all rights reserved).

  4. Plasmachemical oxidation processes in a hybrid gas-liquid electrical discharge reactor

    Energy Technology Data Exchange (ETDEWEB)

    Lukes, Petr; Locke, Bruce R [Department of Chemical and Biomedical Engineering, FAMU-FSU College of Engineering, Florida State University, 2525 Pottsdamer Street, Tallahassee, Florida (United States)

    2005-11-21

    Oxidation processes induced in water by pulsed electrical discharges generated simultaneously in the gas phase in close proximity to the water surface and directly in the liquid were investigated in a hybrid series gas-liquid electrical discharge reactor. The mechanism of phenol degradation was studied through its dependence on the gas phase and liquid phase compositions using pure argon and oxygen atmospheres above the liquid and different initial pH values in the aqueous solution. Phenol degradation was significantly enhanced in the hybrid-series reactor compared with the phenol removal by the single-liquid phase discharge reactor. Under an argon atmosphere the mechanism of phenol degradation was mainly caused by the electrophilic attack of OH{center_dot} radicals produced by the liquid phase discharge directly in water and OH{center_dot} radicals produced by the gas phase discharge at the gas-liquid interface. Under an oxygen atmosphere the formation of gaseous ozone dominated over the formation of OH{center_dot} radicals, and the contribution of the gas phase discharge in this case was determined mainly by the dissolution of gaseous ozone into the water and its subsequent interaction with phenol. At high pH phenol was degraded, in addition to the direct attack by ozone, also through indirect reactions of OH{center_dot} radicals formed via a peroxone process by the decomposition of dissolved ozone by hydrogen peroxide produced by the liquid phase discharge. Such a mechanism was proved by the detection of cis,cis-muconic acid and pH-dependent degradation of phenol, which resulted in significantly higher removal of phenol from alkaline solution observed under oxygen atmosphere than in argon.

  5. Plasmachemical oxidation processes in a hybrid gas-liquid electrical discharge reactor

    International Nuclear Information System (INIS)

    Lukes, Petr; Locke, Bruce R

    2005-01-01

    Oxidation processes induced in water by pulsed electrical discharges generated simultaneously in the gas phase in close proximity to the water surface and directly in the liquid were investigated in a hybrid series gas-liquid electrical discharge reactor. The mechanism of phenol degradation was studied through its dependence on the gas phase and liquid phase compositions using pure argon and oxygen atmospheres above the liquid and different initial pH values in the aqueous solution. Phenol degradation was significantly enhanced in the hybrid-series reactor compared with the phenol removal by the single-liquid phase discharge reactor. Under an argon atmosphere the mechanism of phenol degradation was mainly caused by the electrophilic attack of OH· radicals produced by the liquid phase discharge directly in water and OH· radicals produced by the gas phase discharge at the gas-liquid interface. Under an oxygen atmosphere the formation of gaseous ozone dominated over the formation of OH· radicals, and the contribution of the gas phase discharge in this case was determined mainly by the dissolution of gaseous ozone into the water and its subsequent interaction with phenol. At high pH phenol was degraded, in addition to the direct attack by ozone, also through indirect reactions of OH· radicals formed via a peroxone process by the decomposition of dissolved ozone by hydrogen peroxide produced by the liquid phase discharge. Such a mechanism was proved by the detection of cis,cis-muconic acid and pH-dependent degradation of phenol, which resulted in significantly higher removal of phenol from alkaline solution observed under oxygen atmosphere than in argon

  6. Optical and electrical properties of thin films of bismuth ferric oxide

    International Nuclear Information System (INIS)

    Cardona R, D.

    2014-01-01

    The bismuth ferric oxide (BFO) has caused great attention in recent years because of their multi ferric properties, making it very attractive for different technological applications. In this paper simultaneous ablation of two white (Bi and Fe 2 O 3 ) was used in a reactive atmosphere (containing oxygen) to deposit thin films of BFO. The composition of the films is changed by controlling the plasma parameters such as the average kinetic energy of the ions (E p) and the plasma density (Np). The effects caused by excess of Bi and Fe in atomic structure and the optical and electrical properties of the films BiFeO 3 in terms of plasma parameters were studied. The X-ray diffraction patterns of BFO samples with excess of bismuth above 2% at. They exhibited small changes in structure leading to improved levels of leakage currents compared to levels of the film with a stoichiometry close to BiFeO 3 composition. These samples showed a secondary phase (Bi 2 5FeO 4 0 selenite type) that led to the increase in the values of band gap and resistivity as well as the improvement of the piezoelectric properties. On the other hand, the films with iron excess showed as secondary phase compounds of iron oxide (α - γ-Fe 2 O 3 ) that caused increments in the conductivity and decrease in the values of band gap. The results are discussed in terms of the excesses of Bi and Fe which were correlated with the plasma parameters. (Author)

  7. Analysis of electrical and microstructural characteristics of a ZnO-based varistor doped with rare earth oxide

    International Nuclear Information System (INIS)

    Andrade, J.M. de; Dias, R.; Furtado, J.G. de M.; Assuncao, F.C.R.

    2010-01-01

    Varistor is a semiconductor device, used in the protection of electrical systems, characterized to have a high no-linear electric resistance. Its properties are directly dependents of its chemical composition and microstructural characteristics. In this work were analyzed microstructural and electrical characteristics of a ZnO-based varistor doped with rare earth oxide, with chemical composition (mol%) 98,5.ZnO - 0,3.Pr 6 O 11 - 0,2.Dy 2 O 3 - 0,9.Co 2 O 3 - 0,1.Cr 2 O 3 . X-ray diffraction for phase characterization, scanning electron microscopy and energy dispersive X-ray spectroscopy were used for microstructural analysis. Measurement of average grain size and electrical and dielectric characteristics complete the characterization. The results show the formation of biphasic microstructure and with high densification, presenting relevant varistors characteristics but that would need improvements.(author)

  8. Electrical and optical study of transparent V-based oxide semiconductors prepared by magnetron sputtering under different conditions

    Directory of Open Access Journals (Sweden)

    E. Prociow

    2011-04-01

    Full Text Available This work is focused on structural, optical and electrical behaviors of vanadium-based oxide thin films prepared by magnetron sputtering under different conditions. Thin films have been deposited on glass substrates from metallic vanadium target at low sputtering pressure. Different working gases: argon/oxygen mixture, and especially pure oxygen gas, have been applied. Results of X-ray diffraction together with optical transmission and temperature- dependent electrical resistivity measurements have been presented. Transmission coefficient, cut-off wavelength and the width of the optical band gap have been calculated from optical measurements. The d.c. resistivity values at room temperature and thermal activation energy have been obtained from electrical investigations. The influence of sputtering process conditions on optical and electrical properties has been discussed.

  9. Effects of electrical discharge surface modification of superalloy Haynes 230 with aluminum and molybdenum on oxidation behavior

    International Nuclear Information System (INIS)

    Bai, C.-Y.

    2007-01-01

    The effects of the electrical discharge alloying (EDA) process on improving the high temperature oxidation resistance of the Ni-based superalloy Haynes 230 have been investigated. The 85 at.% Al and 15 at.% Mo composite electrode provided the surface alloying materials. An Al-rich layer is produced on the surface of the EDA specimen alloyed with positive electrode polarity, whereas, many discontinuous piled layers are attached to the surface of the EDA superalloy when negative electrode polarity is selected. The oxidation resistance of the specimen alloyed with positive electrode polarity is better than that of the unalloyed superalloy, and the effective temperature of oxidation resistance of the alloyed layer can be achieved to 1100 o C. Conversely, the oxidation resistance of the other EDA specimen alloyed with negative electrode polarity is even worse than that of the unalloyed superalloy

  10. Chronological change of electrical resistance in GeCu2Te3 amorphous film induced by surface oxidation

    International Nuclear Information System (INIS)

    Saito, Yuta; Shindo, Satoshi; Sutou, Yuji; Koike, Junichi

    2014-01-01

    Unusual chronological electrical resistance change behavior was investigated for amorphous GeCu 2 Te 3 phase change material. More than a 1 order decrease of electrical resistance was observed in the air even at room temperature. The resistance of the amorphous film gradually increased with increasing temperature and then showed a drop upon crystallization. Such unusual behavior was attributed to the oxidation of the amorphous GeCu 2 Te 3 film. From the compositional depth profile measurement, the GeCu 2 Te 3 film without any capping layer was oxidized in air at room temperature and the formed oxide was mainly composed of germanium oxide. Consequently, a highly-conductive Cu-rich layer was formed in the vicinity of the surface of the film, which reduced the total resistance of the film. The present results could provide insight into the chronological change of electrical resistance in amorphous chalcogenide materials, indicating that not only relaxation of the amorphous, but also a large atomic diffusion contributes to the chronological resistance change. (paper)

  11. 10,000 optical write, read, and erase cycles in an azobenzene sidechain liquid-crystalline polyester

    DEFF Research Database (Denmark)

    Holme, NCR; Ramanujam, P.S.; Hvilsted, Søren

    1996-01-01

    We show far what is believed to he the first time that it is possible tu generate 10,000 rapid write, read, and erase cycles optically in an azobenzene sidechain liquid-crystalline polyester. We do this by exposing the film alternately to visible light from an argon laser at 488 nm and ultraviolet...

  12. Memory Erasing Drugs Now in Earliest Stages%美科学家正研制遗忘痛苦药

    Institute of Scientific and Technical Information of China (English)

    2011-01-01

    Painful memories of people could be erased from their mind by a new medical technology, a research made by Johns Hopkins University suggests. The Johns Hopkins researchers say they are working on ways to remove the pro teins from the brain's fear center,

  13. Controlling the Optical and Magnetic Properties of Nanostructured Cuprous Oxide Synthesized from Waste Electric Cables

    Science.gov (United States)

    Abdelbasir, S. M.; El-Sheikh, S. M.; Rashad, M. M.; Rayan, D. A.

    2018-03-01

    Cuprous oxide Cu2O nanopowders were purposefully synthesised from waste electric cables (WECs) via a simple precipitation route at room temperature using lactose as a reducing agent. In this regard, dimethyl sulfoxide (DMSO) was first applied as an organic solvent for the dissolution of the cable insulating materials. Several parameters were investigated during dissolution of WECs such as dissolution temperature, time and solid/liquid ratio to determine the dissolution percentage of the insulating materials in DMSO. The morphology and the optical properties of the formed Cu2O particles were investigated using X-ray diffraction (XRD), field emission-scanning electron microscopy (FE-SEM), Fourier-transform infrared spectroscopy and UV-visible-near IR spectrophotometer. XRD data confirmed the presence of single crystalline phase of Cu2O nanoparticles. FE-SEM and TEM images revealed spherical, cubic and octahedral shapes with the various particle sizes ranged from 16 to 57 nm depending on the synthesis conditions. A possible mechanism explaining the Cu2O nanostructures formation was proposed. The band gap energies of the Cu2O nanostructures were estimated and the values were located between 1.5 and 2.08 eV. Photoluminescence spectroscopy analysis clearly showed a noticeably blue-shifted emission for the synthesized samples compared to spectrum of the bulk. Eventually, magnetic properties of the synthesized nanoparticles have been measured by vibrating sample magnetometer and the attained results implied that the synthesized particles are weakly ferromagnetic in nature at normal temperature.

  14. Optical and Electrical Properties of Tin-Doped Cadmium Oxide Films Prepared by Electron Beam Technique

    Science.gov (United States)

    Ali, H. M.; Mohamed, H. A.; Wakkad, M. M.; Hasaneen, M. F.

    2009-04-01

    Tin-doped cadmium oxide films were deposited by electron beam evaporation technique. The structural, optical and electrical properties of the films were characterized. The X-ray diffraction (XRD) study reveals that the films are polycrystalline in nature. As composition and structure change due to the dopant ratio and annealing temperature, the carrier concentration was varied around 1020 cm-3, and the mobility increased from less than 10 to 45 cm2 V-1 s-1. A transmittance value of ˜83% and a resistivity value of 4.4 ×10-4 Ω cm were achieved for (CdO)0.88(SnO2)0.12 film annealed at 350 °C for 15 min., whereas the maximum value of transmittance ˜93% and a resistivity value of 2.4 ×10-3 Ω cm were obtained at 350 °C for 30 min. The films exhibited direct band-to-band transitions, which corresponded to optical band gaps of 3.1-3.3 eV.

  15. Cycle Life of Commercial Lithium-Ion Batteries with Lithium Titanium Oxide Anodes in Electric Vehicles

    Directory of Open Access Journals (Sweden)

    Xuebing Han

    2014-07-01

    Full Text Available The lithium titanium oxide (LTO anode is widely accepted as one of the best anodes for the future lithium ion batteries in electric vehicles (EVs, especially since its cycle life is very long. In this paper, three different commercial LTO cells from different manufacturers were studied in accelerated cycle life tests and their capacity fades were compared. The result indicates that under 55 °C, the LTO battery still shows a high capacity fade rate. The battery aging processes of all the commercial LTO cells clearly include two stages. Using the incremental capacity (IC analysis, it could be judged that in the first stage, the battery capacity decreases mainly due to the loss of anode material and the degradation rate is lower. In the second stage, the battery capacity decreases much faster, mainly due to the degradation of the cathode material. The result is important for the state of health (SOH estimation and remaining useful life (RUL prediction of battery management system (BMS for LTO batteries in EVs.

  16. Grain-size effect on the electrical properties of nanocrystalline indium tin oxide thin films

    Energy Technology Data Exchange (ETDEWEB)

    Lee, Jong Hoon [Korea Research Institute of Standards and Science, 267 Gajeong-Ro, Yuseong-Gu, Daejeon 305-340 (Korea, Republic of); Kim, Young Heon, E-mail: young.h.kim@kriss.re.kr [Korea Research Institute of Standards and Science, 267 Gajeong-Ro, Yuseong-Gu, Daejeon 305-340 (Korea, Republic of); University of Science & Technology, 217 Gajeong-Ro, Yuseong-Gu, Daejeon 305-350 (Korea, Republic of); Ahn, Sang Jung [Korea Research Institute of Standards and Science, 267 Gajeong-Ro, Yuseong-Gu, Daejeon 305-340 (Korea, Republic of); University of Science & Technology, 217 Gajeong-Ro, Yuseong-Gu, Daejeon 305-350 (Korea, Republic of); Ha, Tae Hwan [University of Science & Technology, 217 Gajeong-Ro, Yuseong-Gu, Daejeon 305-350 (Korea, Republic of); Future Biotechnology Research Division, Korea Research Institute of Bioscience and Biotechnology (KRIBB), 125 Gwahak-ro, Yuseong-Gu, Daejeon 305-806 (Korea, Republic of); Kim, Hong Seung [Department of Nano Semiconductor Engineering, Korea Maritime and Ocean University, 727 Taejong-Ro, Busan 606-791 (Korea, Republic of)

    2015-09-15

    Highlights: • Nanometer-sized small grains were observed in the ITO thin films. • The grain size increased as the post-thermal annealing temperature increased. • The mobility of ITO thin films increased with increasing grain size. • The ITO film annealed at 300 °C was an amorphous phase, while the others were polycrystalline structure. - Abstract: In this paper, we demonstrate the electrical properties, depending on grain size, of nanocrystalline indium tin oxide (ITO) thin films prepared with a solution process. The size distributions of nanometer-sized ITO film grains increased as the post-annealing temperature increased after deposition; the grain sizes were comparable with the calculated electron mean free path. The mobility of ITO thin films increased with increasing grain size; this phenomenon was explained by adopting the charge-trapping model for grain boundary scattering. These findings suggest that it is possible to improve mobility by reducing the number of trapping sites at the grain boundary.

  17. Optimizing the electrical excitation of an atmospheric pressure plasma advanced oxidation process.

    Science.gov (United States)

    Olszewski, P; Li, J F; Liu, D X; Walsh, J L

    2014-08-30

    The impact of pulse-modulated generation of atmospheric pressure plasma on the efficiency of organic dye degradation has been investigated. Aqueous samples of methyl orange were exposed to low temperature air plasma and the degradation efficiency was determined by absorbance spectroscopy. The plasma was driven at a constant frequency of 35kHz with a duty cycle of 25%, 50%, 75% and 100%. Relative concentrations of dissolved nitrogen oxides, pH, conductivity and the time evolution of gas phase ozone were measured to identify key parameters responsible for the changes observed in degradation efficiency. The results indicate that pulse modulation significantly improved dye degradation efficiency, with a plasma pulsed at 25% duty showing a two-fold enhancement. Additionally, pulse modulation led to a reduction in the amount of nitrate contamination added to the solution by the plasma. The results clearly demonstrate that optimization of the electrical excitation of the plasma can enhance both degradation efficiency and the final water quality. Copyright © 2014 Elsevier B.V. All rights reserved.

  18. Electrical stimulation of human lower extremities enhances energy consumption, carbohydrate oxidation, and whole body glucose uptake.

    Science.gov (United States)

    Hamada, Taku; Hayashi, Tatsuya; Kimura, Tetsuya; Nakao, Kazuwa; Moritani, Toshio

    2004-03-01

    Our laboratory has recently demonstrated that low-frequency electrical stimulation (ES) of quadriceps muscles alone significantly enhanced glucose disposal rate (GDR) during euglycemic clamp (Hamada T, Sasaki H, Hayashi T, Moritani T, and Nakao K. J Appl Physiol 94: 2107-2112, 2003). The present study is further follow-up to examine the acute metabolic effects of ES to lower extremities compared with voluntary cycle exercise (VE) at identical intensity. In eight male subjects lying in the supine position, both lower leg (tibialis anterior and triceps surae) and thigh (quadriceps and hamstrings) muscles were sequentially stimulated to cocontract in an isometric manner at 20 Hz with a 1-s on-off duty cycle for 20 min. Despite small elevation of oxygen uptake by 7.3 +/- 0.3 ml x kg(-1) x min(-1) during ES, the blood lactate concentration was significantly increased by 3.2 +/- 0.3 mmol/l in initial period (5 min) after the onset of the ES (P increased anaerobic glycolysis by ES. Furthermore, whole body glucose uptake determined by GDR during euglycemic clamp demonstrated a significant increase during and after the cessation of ES for at least 90 min (P energy consumption, carbohydrate oxidation, and whole body glucose uptake at low intensity of exercise. Percutaneous ES may become a therapeutic utility to enhance glucose metabolism in humans.

  19. Microstructure and electrical properties of bismuth and bismuth oxide deposited by magnetron sputtering UBM

    International Nuclear Information System (INIS)

    Otalora B, D. M.; Dussan, A.; Olaya F, J. J.

    2015-01-01

    In this work, bismuth (Bi) and bismuth oxide (Bi 2 O 3 ) thin films were prepared, at room temperature, by Sputtering Unbalanced Magnetron (UBM - Unbalance Magnetron) technique under glass substrates. Microstructural and electrical properties of the samples were studied by X-ray diffraction (XRD) and System for Measuring Physical Properties - PPMS (Physical Property Measurement System). Dark resistivity of the material was measured for a temperature range between 100 and 400 K. From the XRD measurements it was observed a polycrystalline character of the Bi associated to the presence of phases above the main peak, 2θ = 26.42 grades and a growth governed by a rhombohedral structure. Crystal parameters were obtained for both compounds, Bi and Bi 2 O 3 . From the analysis of the spectra of the conductivity as a function of temperature, it was established that the transport mechanism that governs the region of high temperature (T>300 K) is thermally activated carriers. From conductivity measurements the activation energies were obtained of 0.0094 eV and 0.015 eV for Bi 2 O 3 and Bi, respectively. (Author)

  20. Synthesis of Antimony Doped Tin Oxide and its Use as Electrical Humidity Sensor

    Directory of Open Access Journals (Sweden)

    B. C. Yadav

    2008-05-01

    Full Text Available In this paper we report the humidity sensitive electrical properties of antimony doped tin oxide. Antimony has been doped within SnO2 in the ratio 1:1. The pellet has been made by hydraulic pressing machine at pressure 30 MPa and room temperature 24°C. This pellet, has been annealed at 200ºC, 300ºC, 400ºC, 500ºC and 600ºC successively for 3 hrs and after each step annealing, observations were taken. It has been observed, as Relative Humidity (%RH increases, there is decrease in the resistivity of pellet for the entire range of RH i.e. from 10% to 95%. Linear decrease is observed for the range of RH from 10% to 85% for annealing temperature 200ºC and 300ºC, from 10% to 60% for annealing temperature 400ºC and from 10% to 30% for annealing temperature 500ºC and 600ºC respectively. Scanning electron micrographs show the surface morphology and X-ray diffraction reveals the nanostructure of sensing element. Results have been found reproducible with hysterisis of ± 2% after 3 months.

  1. Mesoporous tin-doped indium oxide thin films: effect of mesostructure on electrical conductivity

    Directory of Open Access Journals (Sweden)

    Till von Graberg, Pascal Hartmann, Alexander Rein, Silvia Gross, Britta Seelandt, Cornelia Röger, Roman Zieba, Alexander Traut, Michael Wark, Jürgen Janek and Bernd M Smarsly

    2011-01-01

    Full Text Available We present a versatile method for the preparation of mesoporous tin-doped indium oxide (ITO thin films via dip-coating. Two poly(isobutylene-b-poly(ethyleneoxide (PIB-PEO copolymers of significantly different molecular weight (denoted as PIB-PEO 3000 and PIB-PEO 20000 are used as templates and are compared with non-templated films to clarify the effect of the template size on the crystallization and, thus, on the electrochemical properties of mesoporous ITO films. Transparent, mesoporous, conductive coatings are obtained after annealing at 500 °C; these coatings have a specific resistance of 0.5 Ω cm at a thickness of about 100 nm. Electrical conductivity is improved by one order of magnitude by annealing under a reducing atmosphere. The two types of PIB-PEO block copolymers create mesopores with in-plane diameters of 20–25 and 35–45 nm, the latter also possessing correspondingly thicker pore walls. Impedance measurements reveal that the conductivity is significantly higher for films prepared with the template generating larger mesopores. Because of the same size of the primary nanoparticles, the enhanced conductivity is attributed to a higher conduction path cross section. Prussian blue was deposited electrochemically within the films, thus confirming the accessibility of their pores and their functionality as electrode material.

  2. Accelerated thermal and radiation-oxidation combined degradation of electric cable insulation materials

    International Nuclear Information System (INIS)

    Yagi, Toshiaki; Seguchi, Tadao; Yoshida, Kenzo

    1986-03-01

    For the development of accelerated testing methodology to estimate the life time of electric cable, which is installed in radiation field such as a nuclear reactor containment vessel, radiation and thermal combined degradation of cable insulation and jacketing materials was studied. The materials were two types of formulated polyethylene, ethylene-propylene rubber, Hypalon, and Neoprene. With Co-60 γ-rays the materials were irradiated up to 0.5 MGy under vacuum and in oxygen under pressure, then exposed to thermal aging at elevated temperature in oxygen. The degradation was investigated by the tensile test, gelfraction, and swelling measurements. The thermal degradation rate for each sample increases with increase of oxygen concentration, i.e. oxygen pressure, during the aging, and tends to saturate above 0.2 MPa of oxygen pressure. Then, the effects of irradiation and the temperature on the thermal degradation rate were investigated at the oxygen pressure of 0.2 MPa in the temperature range from 110 deg C to 150 deg C. For all of samples irradiated in oxygen, the following thermal degradation rate was accelerated by several times comparing with unirradiated samples, while the rate of thermal degradation for the sample except Neoprene irradiated under vacuum was nearly equal to that of unirradiated one. By the analysis of thermal degradation rate against temperature using Arrhenius equation, it was found that the activation energy tends to decrease for the samples irradiated in oxidation condition. (author)

  3. Oxidation Characteristics and Electrical Properties of Doped Mn-Co Spinel Reaction Layer for Solid Oxide Fuel Cell Metal Interconnects

    Directory of Open Access Journals (Sweden)

    Pingyi Guo

    2018-01-01

    Full Text Available To prevent Cr poisoning of the cathode and to retain high conductivity during solid oxide fuel cell (SOFC operation, Cu or La doped Co-Mn coatings on a metallic interconnect is deposited and followed by oxidation at 750 °C. Microstructure and composition of coatings after preparation and oxidation is analyzed by X-ray diffraction (XRD and scanning electron microscopy (SEM. High energy micro arc alloying process, a low cost technique, is used to prepare Cu or La doped Co-Mn coatings with the metallurgical bond. When coatings oxidized at 750 °C in air for 20 h and 100 h, Co3O4 is the main oxide on the surface of Co-38Mn-2La and Co-40Mn coatings, and (Co,Mn3O4 spinel continues to grow with extended oxidation time. The outmost scales of Co-33Mn-17Cu are mainly composed of cubic MnCo2O4 spinel with Mn2O3 after oxidation for 20 h and 100 h. The average thickness of oxide coatings is about 60–70 μm after oxidation for 100 h, except that Co-40Mn oxide coatings are a little thicker. Area-specific resistance of Cu/La doped Co-Mn coatings are lower than that of Co-40Mn coating. (Mn,Co3O4/MnCo2O4 spinel layer is efficient at blocking the outward diffusion of chromium and iron.

  4. Raman scattering, electrical and optical properties of fluorine-doped tin oxide thin films with (200) and (301) preferred orientation

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Chang-Yeoul, E-mail: cykim15@kicet.re.kr [Nano-Convergence Intelligence Material Team, Korea Institute of Ceramic Eng. and Tech., Gasan-digtial-ro 10 Gil 77 Geumcheon-gu, 153-801 Seoul (Korea, Republic of); Riu, Doh-Hyung [Dept. of New Material Sci. and Eng., Seoul National University of Technology, Seoul (Korea, Republic of)

    2014-12-15

    (200) and (301) preferred oriented fluorine-doped tin oxide (FTO) thin films were fabricated by spray pyrolysis of ethanol-added and water-based FTO precursor solutions, respectively. (200) oriented FTO thin film from ethanol-added solution shows the lower electrical resistivity and visible light transmission than (301) preferred thin film from water-based solution. It is due to the higher carrier concentration and electron mobility in (200) oriented crystals, that is, the lower ionized impurity scattering. The higher electron concentration is related to the higher optical band gap energy, the lower visible light transmission, and the higher IR reflection. For (301) preferred FTO thin films from water-based solution, the lower carrier concentration and electron mobility make the higher electrical resistivity and visible light transmission. Raman scattering analysis shows that IR active modes prominent in (200) oriented FTO thin film are related with the lower electrical resistivity. - Highlights: • We coated fluorine-doped tin oxide thin films with preferred orientation of (200) and (301). • We examine changes in the level of electrical and optical properties with the orientation. • (200) preferred orientation showed lower electrical resistivity and optical transmittance. • (200) oriented thin films have higher electron concentrations that are related with IR active modes.

  5. Effect of O2 plasma immersion on electrical properties and transistor performance of indium gallium zinc oxide thin films

    International Nuclear Information System (INIS)

    Liu, P.; Chen, T.P.; Liu, Z.; Tan, C.S.; Leong, K.C.

    2013-01-01

    Evolution of electrical properties and thin-film transistor characteristics of amorphous indium gallium zinc oxide (IGZO) thin films synthesized by RF sputtering with O 2 plasma immersion has been examined. O 2 plasma immersion results in an enhancement in the Hall mobility and a decrease in the electron concentration; and the transistor performance can be greatly improved by the O 2 plasma immersion. X-ray photoelectron spectroscopy analysis indicates that the effect of O 2 plasma immersion on the electrical properties and the transistor performance can be attributed to the reduction of the oxygen-related defects in the IGZO thin films. - Highlights: • Oxygen plasma immersion effect on indium gallium zinc oxide thin film properties • Oxygen-related defect reduces in the InGaZnO thin film with oxygen plasma immersion. • Increasing oxygen plasma immersion duration on device will decrease the off current. • Oxygen plasma immersion enhances the performance of device

  6. Tuning of electrical and structural properties of indium oxide films grown by metal organic chemical vapor deposition

    International Nuclear Information System (INIS)

    Wang, Ch.Y.; Cimalla, V.; Romanus, H.; Kups, Th.; Niebelschuetz, M.; Ambacher, O.

    2007-01-01

    Tuning of structural and electrical properties of indium oxide (In 2 O 3 ) films by means of metal organic chemical vapor deposition is demonstrated. Phase selective growth of rhombohedral In 2 O 3 (0001) and body-centered cubic In 2 O 3 (001) polytypes on (0001) sapphire substrates was obtained by adjusting the substrate temperature and trimethylindium flow rate. The specific resistance of the as-grown films can be tuned by about two orders of magnitude by varying the growth conditions

  7. Electrical and thermal modeling of a large-format lithium titanate oxide battery system.

    Science.gov (United States)

    2015-04-01

    The future of mass transportation is clearly moving towards the increased efficiency of hybrid and electric vehicles. Electrical : energy storage is a key component in most of these advanced vehicles, with the system complexity and vehicle cost shift...

  8. Synergistic effect of Ag nanoparticle-decorated graphene oxide and carbon fiber on electrical actuation of polymeric shape memory nanocomposites

    International Nuclear Information System (INIS)

    Lu, Haibao; Leng, Jinsong; Du, Shanyi; Liang, Fei; Gou, Jihua

    2014-01-01

    This study reports an effective approach of significantly improving electrical properties and recovery performance of shape memory polymer (SMP) nanocomposite, of which its shape recovery was triggered by electrically resistive Joule heating. Reduced graphene oxide (GOs) self-assembled and grafted onto carbon fiber, were used to enhance the interfacial bonding with the SMP matrix via van der Waals force and covalent bond, respectively. A layer of Ag nanoparticles was synthesized from Ag + solution and chemically deposited onto GO assemblies. These Ag nanoparticles were expected to bridge the gap between GO and improve the electrical conductivity. The experimental results reveal that the electrical conductivity of the SMP nanocomposite was significantly improved via the synergistic effect between Ag nanoparticle-decorated GO and carbon fiber. Finally, the electrically induced shape memory effect of the SMP nanocomposite was achieved, and the temperature distribution in the SMP nanocomposites was recorded and monitored. An effective approach was demonstrated to produce the electro-activated SMP nanocomposites and the resistive Joule heating was viable at a low electrical voltage below 10 V. (paper)

  9. Effects of in situ plasma treatment on optical and electrical properties of index-matched transparent conducting oxide layer

    International Nuclear Information System (INIS)

    Lim, Yong Hwan; Yoo, Hana; Choi, Bum Ho; Kim, Young Baek; Lee, Jong Ho; Shin, Dong Chan

    2010-01-01

    We investigated the effects of in situ plasma-treatment on optical and electrical properties of index-matched indium tin oxide (IMITO) thin film. To render the IMITO-coated surface hydrophilic and study the optical and electrical characteristics, we performed in situ oxygen plasma post-treatment without breaking vacuum. The 94.6% transmittance in the visible wavelength range (400-700 nm) increased on average to 96.4% and the maximum transmittance reached 98% over a broad wavelength range. The surface roughness and sheet resistance improved from 0.9 nm and 200 Ω/sq to 0.0905 nm and 100 Ω/sq, respectively, by in situ plasma post-treatment. We confirmed by contact angle measurement that the hydrophobic IMITO surface was altered to hydrophilic. The improved optical and electrical characteristics of in situ plasma-treated IMITO makes it adequate for high-resolution liquid crystal on silicon displays.

  10. Modulation of the electrical properties in amorphous indium-gallium zinc-oxide semiconductor films using hydrogen incorporation

    Science.gov (United States)

    Song, Aeran; Park, Hyun-Woo; Chung, Kwun-Bum; Rim, You Seung; Son, Kyoung Seok; Lim, Jun Hyung; Chu, Hye Yong

    2017-12-01

    The electrical properties of amorphous-indium-gallium-zinc-oxide (a-IGZO) thin films were investigated after thermal annealing and plasma treatment under different gas conditions. The electrical resistivity of a-IGZO thin films post-treated in a hydrogen ambient were lower than those without treatment and those annealed in air, regardless of the methods used for both thermal annealing and plasma treatment. The electrical properties can be explained by the quantity of hydrogen incorporated into the samples and the changes in the electronic structure in terms of the chemical bonding states, the distribution of the near-conduction-band unoccupied states, and the band alignment. As a result, the carrier concentrations of the hydrogen treated a-IGZO thin films increased, while the mobility decreased, due to the increase in the oxygen vacancies from the occurrence of unoccupied states in both shallow and deep levels.

  11. Optical modeling and electrical properties of cadmium oxide nanofilms: Developing a meta–heuristic calculation process model

    Energy Technology Data Exchange (ETDEWEB)

    Abdolahzadeh Ziabari, Ali, E-mail: ali.abd.ziabari@gmail.com [Nano Research Lab, Lahijan Branch, Islamic Azad University, P.O. Box 1616, Lahijan (Iran, Islamic Republic of); Refahi Sheikhani, A. H. [Department of Applied Mathematics, Lahijan Branch, Islamic Azad University, Lahijan (Iran, Islamic Republic of); Nezafat, Reza Vatani [Department of Civil Engineering, Faculty of Technology, University of Guilan, Rasht (Iran, Islamic Republic of); Haghighidoust, Kasra Monsef [Department of Mechanical Engineering, Faculty of Technology, University of Guilan, Rasht (Iran, Islamic Republic of)

    2015-04-07

    Cadmium oxide thin films were deposited onto glass substrates by sol–gel dip-coating method and annealed in air. The normal incidence transmittance of the films was measured by a spectrophotometer. D.C electrical parameters such as carrier concentration and mobility were analyzed by Hall Effect measurements. A combination of Forouhi–Bloomer and standard Drude model was used to simulate the optical constants and thicknesses of the films from transmittance data. The transmittance spectra of the films in the visible domain of wavelengths were successfully fitted by using the result of a hybrid particle swarm optimization method and genetic algorithm. The simulated transmittance is in good accordance with the measured spectrum in the whole measurement wavelength range. The electrical parameters obtained from the optical simulation are well consistent with those measured electrically by Hall Effect measurements.

  12. Maskless X-Ray Writing of Electrical Devices on a Superconducting Oxide with Nanometer Resolution and Online Process Monitoring.

    Science.gov (United States)

    Mino, Lorenzo; Bonino, Valentina; Agostino, Angelo; Prestipino, Carmelo; Borfecchia, Elisa; Lamberti, Carlo; Operti, Lorenza; Fretto, Matteo; De Leo, Natascia; Truccato, Marco

    2017-08-22

    X-ray nanofabrication has so far been usually limited to mask methods involving photoresist impression and subsequent etching. Herein we show that an innovative maskless X-ray nanopatterning approach allows writing electrical devices with nanometer feature size. In particular we fabricated a Josephson device on a Bi 2 Sr 2 CaCu 2 O 8+δ (Bi-2212) superconducting oxide micro-crystal by drawing two single lines of only 50 nm in width using a 17.4 keV synchrotron nano-beam. A precise control of the fabrication process was achieved by monitoring in situ the variations of the device electrical resistance during X-ray irradiation, thus finely tuning the irradiation time to drive the material into a non-superconducting state only in the irradiated regions, without significantly perturbing the crystal structure. Time-dependent finite element model simulations show that a possible microscopic origin of this effect can be related to the instantaneous temperature increase induced by the intense synchrotron picosecond X-ray pulses. These results prove that a conceptually new patterning method for oxide electrical devices, based on the local change of electrical properties, is actually possible with potential advantages in terms of heat dissipation, chemical contamination, miniaturization and high aspect ratio of the devices.

  13. A DFT analysis of the adsorption of nitrogen oxides on Fe-doped graphene, and the electric field induced desorption

    Science.gov (United States)

    Cortés-Arriagada, Diego; Villegas-Escobar, Nery

    2017-10-01

    Density functional theory calculations were carried out to study the adsorption and sensing properties of Fe-doped graphene nanosheets (FeG) toward nitrogen oxides (NO, NO2, and N2O). The results indicated the adsorption of nitrogen oxides is significantly increased onto FeG compared to pristine graphene, reaching adsorption energies of 1.1-2.2 eV, even with a high stability at room temperature. As a result of the larger charge transfer and strong chemical binding, the bandgap of the adsorbent-adsorbate systems is increased in up to 0.5 eV with respect to the free FeG, indicating that FeG is highly sensitive to nitrogen oxides. It was also evidenced the adsorption and sensing properties remain even in the presence of O2 currents for N2O, where a co-adsorption mechanism was analyzed. Besides, NO2 is capable to induce the largest magnetization of FeG. Finally, positive electric fields of at least 0.04 a.u. decrease the stability of the adsorbent-adsorbate interactions, inducing the desorption process. Therefore, FeG emerges as a promising low-dimensional material with excellent adsorption and sensing properties to be applied in solid state sensors of nitrogen oxides, where electric fields can be used as a strategy for the FeG reactivation in repetitive sensing applications.

  14. Carbothermic reduction of electric arc furnace dust and calcination of waelz oxide by semi-pilot scale rotary furnace

    Directory of Open Access Journals (Sweden)

    Morcali M.H.

    2012-01-01

    Full Text Available The paper gives a common outline about the known recycling techniques from electric arc furnace dusts and describes an investigation of a pyrometallurgical process for the recovery of zinc and iron from electric arc furnace dusts (EAFD. In the waelz process, the reduction of zinc and iron from the waste oxides using solid carbon (lignite coal was studied. In the reduction experiments; temperature, time and charge type (powder and pellet were investigated in detail. It was demonstrated that zinc and iron recovery (% increases with increasing temperature as well as time. Pelletizing was found to be a better method than using the powder as received for the zinc recovery and iron conversion (. In the calcination (roasting process, crude zinc oxide, which evaporated from non-ferric metals were collected as condensed product (crude waelz oxide, was heated in air atmosphere. Lead, cadmium as well as chlorine and other impurities were successfully removed from crude waelz oxide by this method. In the calcination experiments; temperature and time are investigated in detail. It was demonstrated that zinc purification (% increases with increasing temperature. The highest zinc refining (% was obtained at 1200°C for 120 minutes. A kinetic study was also undertaken to determine the activation energy of the process. Activation energies were 242.77 kJ/mol for the zinc recovery with powder forms, 261.99 kJ/mol for the zinc recovery with pellet forms respectively. It was found that, initially, the reaction was chemically controlled.

  15. GAMMA RADIATION INTERACTS WITH MELANIN TO ALTER ITS OXIDATION-REDUCTION POTENTIAL AND RESULTS IN ELECTRIC CURRENT PRODUCTION

    Energy Technology Data Exchange (ETDEWEB)

    Turick, C.; Ekechukwu, A.; Milliken, C.

    2011-05-17

    The presence of melanin pigments in organisms is implicated in radioprotection and in some cases, enhanced growth in the presence of high levels of ionizing radiation. An understanding of this phenomenon will be useful in the design of radioprotective materials. However, the protective mechanism of microbial melanin in ionizing radiation fields has not yet been elucidated. Here we demonstrate through the electrochemical techniques of chronoamperometry, chronopotentiometry and cyclic voltammetry that microbial melanin is continuously oxidized in the presence of gamma radiation. Our findings establish that ionizing radiation interacts with melanin to alter its oxidation-reduction potential. Sustained oxidation resulted in electric current production and was most pronounced in the presence of a reductant, which extended the redox cycling capacity of melanin. This work is the first to establish that gamma radiation alters the oxidation-reduction behavior of melanin, resulting in electric current production. The significance of the work is that it provides the first step in understanding the initial interactions between melanin and ionizing radiation taking place and offers some insight for production of biomimetic radioprotective materials.

  16. Electricity

    International Nuclear Information System (INIS)

    Tombs, F.

    1983-01-01

    The subject is discussed, with particular reference to the electricity industry in the United Kingdom, under the headings; importance and scope of the industry's work; future fuel supplies (estimated indigenous fossil fuels reserves); outlook for UK energy supplies; problems of future generating capacity and fuel mix (energy policy; construction programme; economics and pricing; contribution of nuclear power - thermal and fast reactors; problems of conversion of oil-burning to coal-burning plant). (U.K.)

  17. Solvothermal synthesis and electrical conductivity model for the zinc oxide-insulated oil nanofluid

    International Nuclear Information System (INIS)

    Shen, L.P.; Wang, H.; Dong, M.; Ma, Z.C.; Wang, H.B.

    2012-01-01

    A new kind of nanofluid, ZnO-insulated oil nanofluid was prepared from ZnO nanoparticles synthesized by solvothermal method. Electrical property measurement shows that the electrical conductivity increases by 973 times after adding 0.75% volumetric fraction of ZnO nanoparticles into the insulated oil. A linear dependence of the electrical conductivity on the volumetric fraction has been observed, while the temperature dependence of the electrical conductivity reveals a nonlinear relationship. An electrical conductivity model is established for the nanofluid by considering both the Brownian motion and electrophoresis of the ZnO nanoparticles. -- Highlights: ► Stable ZnO-insulated oil nanofluid was successfully prepared. ► The electrical conductivity of the ZnO nanofluid is investigated. ► A new model is established to explain the electrical properties of the nanofluid.

  18. Correction: Large-scale electricity storage utilizing reversible solid oxide cells combined with underground storage of CO2 and CH4

    DEFF Research Database (Denmark)

    Jensen, Søren Højgaard; Graves, Christopher R.; Mogensen, Mogens Bjerg

    2017-01-01

    Correction for ‘Large-scale electricity storage utilizing reversible solid oxide cells combined with underground storage of CO2 and CH4’ by S. H. Jensen et al., Energy Environ. Sci., 2015, 8, 2471–2479.......Correction for ‘Large-scale electricity storage utilizing reversible solid oxide cells combined with underground storage of CO2 and CH4’ by S. H. Jensen et al., Energy Environ. Sci., 2015, 8, 2471–2479....

  19. A novel immunohistochemical sequential multi-labelling and erasing technique enables epitope characterization of bone marrow pericytes in primary myelofibrosis

    DEFF Research Database (Denmark)

    Madelung, Ann; Bzorek, Michael; Bondo, Henrik

    2012-01-01

    : In Philadelphia (Ph)-negative chronic myeloproliferative neoplasms, increased microvascular density, bizarre vessel architecture and increased number of pericytes are among the distinct histopathological features. The aim of this study was to characterize bone marrow pericytes in primary myelofibrosis (PMF) using...... a novel multi-labelling immunohistochemical technique. Methods and results: Bone marrow biopsies from a normal donor (n = 1) and patients with PMF (n = 3) were subjected to an immunohistochemical sequential multi-labelling and erasing technique (SE-technique). Antigens of interest in the first and....../or second layer were detected with an immunoperoxidase system and visualized with aminoethylcarbazole. After imaging, erasing and blocking of immunoreagents, the slides were stained with a traditional double immunolabelling procedure. In addition, we applied a Photoshop(®) colour palette, creating a single...

  20. Energy band structure and electrical properties of Ga-oxide/GaN interface formed by remote oxygen plasma

    Science.gov (United States)

    Yamamoto, Taishi; Taoka, Noriyuki; Ohta, Akio; Truyen, Nguyen Xuan; Yamada, Hisashi; Takahashi, Tokio; Ikeda, Mitsuhisa; Makihara, Katsunori; Nakatsuka, Osamu; Shimizu, Mitsuaki; Miyazaki, Seiichi

    2018-06-01

    The energy band structure of a Ga-oxide/GaN structure formed by remote oxygen plasma exposure and the electrical interface properties of the GaN metal–oxide–semiconductor (MOS) capacitors with the SiO2/Ga-oxide/GaN structures with postdeposition annealing (PDA) at various temperatures have been investigated. Reflection high-energy electron diffraction and X-ray photoelectron spectroscopy clarified that the formed Ga-oxide layer is neither a single nor polycrystalline phase with high crystallinity. We found that the energy band offsets at the conduction band minimum and at the valence band maximum between the Ga-oxide layer and the GaN surface were 0.4 and 1.2 ± 0.2 eV, respectively. Furthermore, capacitance–voltage (C–V) characteristics revealed that the interface trap density (D it) is lower than the evaluation limit of Terman method without depending on the PDA temperatures, and that the SiO2/Ga-oxide stack can work as a protection layer to maintain the low D it, avoiding the significant decomposition of GaN at the high PDA temperature of 800 °C.

  1. Improvement in electrical characteristics of eco-friendly indium zinc oxide thin-film transistors by photocatalytic reaction.

    Science.gov (United States)

    Kang, Jun Ki; Park, Sung Pyo; Na, Jae Won; Lee, Jin Hyeok; Kim, Dongwoo; Kim, Hyun Jae

    2018-05-11

    Eco-friendly solution-processed oxide thin-film transistors (TFTs) were fabricated through photocatalytic reaction of titanium dioxide (PRT). The titanium dioxide (TiO 2 ) surface reacts with H 2 O under ultraviolet (UV) light irradiation and generates hydroxyl radicals (OH∙). These hydroxyl radicals accelerate the decomposition of large organic compounds such as 2-methoxyethanol (2ME; one of the representative solvents for solution-processed metal oxides), creating smaller organic molecular structures compared with 2ME. The decomposed small organic materials have low molar masses and low boiling points, which help improving electrical properties via diminishing defect sites in oxide channel layers and fabricating low temperature solution-processed oxide TFTs. As a result, the field-effect mobility improved from 4.29 to 10.24 cm 2 /V·s for IGZO TFTs and from 2.78 to 7.82 cm 2 /V·s for IZO TFTs, and the V th shift caused by positive bias stress (PBS) and negative bias illumination stress (NBIS) over 1,000 s under 5,700 lux decreased from 6.2 to 2.9 V and from 15.3 to 2.8 V, respectively. In theory, TiO 2 has a permanent photocatalytic reaction; as such, hydroxyl radicals are generated continuously under UV irradiation, improving the electrical characteristics of solution-processed IZO TFTs even after four iterations of TiO 2 recycling in this study. Thus, the PRT method provides an eco-friendly approach for high-performance solution-processed oxide TFTs.

  2. Optical and electrical experiments at some transition-metal oxide foil-electrolyte interfaces

    International Nuclear Information System (INIS)

    Sari, S.O.; Ahlgren, W.L.

    1977-01-01

    Metal-oxide layers formed from transition-metal foils oxidized by heating in air have been examined for their photoelectrolytic response. The metals examined are Y, Ti, Zr, Hf, V, Nb, Ta, Mo, W, and Pt. Weak photoeffects are observed for oxide layers of all of these metals. Sizable light-dependent oxygen gas evolution rates are found in Ti and also in W oxides. The spectral dependence of the oxygen response in these compounds is investigated, and interpretation is given of these experiments

  3. Charge trapping characteristics of Au nanocrystals embedded in remote plasma atomic layer-deposited Al2O3 film as the tunnel and blocking oxides for nonvolatile memory applications

    International Nuclear Information System (INIS)

    Lee, Jaesang; Kim, Hyungchul; Park, Taeyong; Ko, Youngbin; Ryu, Jaehun; Jeon, Heeyoung; Park, Jingyu; Jeon, Hyeongtag

    2012-01-01

    Remote plasma atomic layer deposited (RPALD) Al 2 O 3 films were investigated to apply as tunnel and blocking layers in the metal-oxide-semiconductor capacitor memory utilizing Au nanocrystals (NCs) for nonvolatile memory applications. The interface stability of an Al 2 O 3 film deposited by RPALD was studied to observe the effects of remote plasma on the interface. The interface formed during RPALD process has high oxidation states such as Si +3 and Si +4 , indicating that RPALD process can grow more stable interface which has a small amount of fixed oxide trap charge. The significant memory characteristics were also observed in this memory device through the electrical measurement. The memory device exhibited a relatively large memory window of 5.6 V under a 10/-10 V program/erase voltage and also showed the relatively fast programming/erasing speed and a competitive retention characteristic after 10 4 s. These results indicate that Al 2 O 3 films deposited via RPALD can be applied as the tunnel and blocking oxides for next-generation flash memory devices.

  4. Microstructure and electrical-optical properties of cesium tungsten oxides synthesized by solvothermal reaction followed by ammonia annealing

    International Nuclear Information System (INIS)

    Liu Jingxiao; Ando, Yoshihiko; Dong Xiaoli; Shi Fei; Yin Shu; Adachi, Kenji; Chonan, Takeshi; Tanaka, Akikazu; Sato, Tsugio

    2010-01-01

    Cesium tungsten oxides (Cs x WO 3 ) were synthesized by solvothermal reactions using ethanol and 57.1 vol% ethanol aqueous solution at 200 o C for 12 h, and the effects of post annealing in ammonia atmosphere on the microstructure and electrical-optical properties were investigated. Agglomerated particles consisting of disk-like nanoparticles and nanorods of Cs x WO 3 were formed in the pure ethanol and ethanol aqueous solutions, respectively. The samples retained the original morphology and crystallinity after annealing in ammonia atmosphere up to 500 o C, while a small amount of nitrogen ion were incorporated in the lattice. The as-prepared Cs x WO 3 sample showed excellent near infrared (NIR) light shielding ability as well as high transparency in the visible light region. The electrical resistivity of the pressed pellets of the powders prepared in pure ethanol and 57.1 vol% ethanol aqueous solution greatly decreased after ammonia annealing at 500 o C, i.e., from 734 to 31.5 and 231 to 3.58 Ω cm, respectively. - Graphical abstract: Cesium tungsten oxides (Cs x WO 3 ) with different morphology were synthesized by solvothermal reaction, and the effects of post-ammonia annealing on the microstructure and electrical-optical properties were investigated.

  5. Investigation of structural and electrical properties on substrate material for high frequency metal-oxide-semiconductor (MOS) devices

    Science.gov (United States)

    Kumar, M.; Yang, Sung-Hyun; Janardhan Reddy, K.; JagadeeshChandra, S. V.

    2017-04-01

    Hafnium oxide (HfO2) thin films were grown on cleaned P-type Ge and Si substrates by using atomic layer deposition technique (ALD) with thickness of 8 nm. The composition analysis of as-deposited and annealed HfO2 films was characterized by XPS, further electrical measurements; we fabricated the metal-oxide-semiconductor (MOS) devices with Pt electrode. Post deposition annealing in O2 ambient at 500 °C for 30 min was carried out on both Ge and Si devices. Capacitance-voltage (C-V) and conductance-voltage (G-V) curves measured at 1 MHz. The Ge MOS devices showed improved interfacial and electrical properties, high dielectric constant (~19), smaller EOT value (0.7 nm), and smaller D it value as Si MOS devices. The C-V curves shown significantly high accumulation capacitance values from Ge devices, relatively when compare with the Si MOS devices before and after annealing. It could be due to the presence of very thin interfacial layer at HfO2/Ge stacks than HfO2/Si stacks conformed by the HRTEM images. Besides, from current-voltage (I-V) curves of the Ge devices exhibited similar leakage current as Si devices. Therefore, Ge might be a reliable substrate material for structural, electrical and high frequency applications.

  6. Effect of Source/Drain Electrodes on the Electrical Properties of Silicon–Tin Oxide Thin-Film Transistors

    Directory of Open Access Journals (Sweden)

    Xianzhe Liu

    2018-05-01

    Full Text Available Ultra-high definition displays have become a trend for the current flat plane displays. In this study, the contact properties of amorphous silicon–tin oxide thin-film transistors (a-STO TFTs employed with source/drain (S/D electrodes were analyzed. Ohmic contact with a good device performance was achieved when a-STO was matched with indium-tin-oxide (ITO or Mo electrodes. The acceptor-like densities of trap states (DOS of a-STO TFTs were further investigated by using low-frequency capacitance–voltage (C–V characteristics to understand the impact of the electrode on the device performance. The reason of the distinct electrical performances of the devices with ITO and Mo contacts was attributed to different DOS caused by the generation of local defect states near the electrodes, which distorted the electric field distribution and formed an electrical potential barrier hindering the flow of electrons. It is of significant importance for circuit designers to design reliable integrated circuits with SnO2-based devices applied in flat panel displays.

  7. Electrical characterization of a laminar manganese oxide type birnessite; Caracterizacion electrica de un oxido de manganeso laminar tipo birnesita

    Energy Technology Data Exchange (ETDEWEB)

    Arias, N. P.; Becerra, M. E.; Giraldo, O., E-mail: ohgiraldoo@unal.edu.co [Universidad Nacional de Colombia, Sede Manizales, Facultad de Ciencias Exactas y Naturales, Laboratorio de Materiales Nanoestructurados y Funcionales, Carrera 27 No. 64-60, 170004 Manizales (Colombia)

    2015-07-01

    This paper records the characterization of a manganese oxide synthesized by solid state routes which is analogous to natural mineral called birnessite. The analysis of X-ray diffraction and average oxidation state of manganese show that the material has a lamellar structure containing manganese in oxidation states (+4) and (+3). The results of electron microscopy along with surface area and pore size measurements reveal the presence of micro and meso pores in the material. Impedance spectroscopy suggests that high frequency electrical conduction occurs in the volume and on the border of the aggregates; in contrast, ionic conductivity at low frequencies was associated with potassium ions located in the interlaminar region. Ac conductivity values at low frequencies were 1.599 x 10{sup -6} Ω{sup -1} cm{sup -1} and 6.416 x 10{sup -5} Ω{sup -1} cm{sup -1} at high frequencies. These values are associated with an increased probability of electron jumping as frequency increases. These findings contribute to the understanding of electrical conduction processes and provides important information about its potential applications. As a result, this research will prove relevant in the field of batteries, super capacitors and heterogeneous catalysis, among others. (Author)

  8. Polypyrrole–titanium(IV) doped iron(III) oxide nanocomposites: Synthesis, characterization with tunable electrical and electrochemical properties

    International Nuclear Information System (INIS)

    Nandi, Debabrata; Ghosh, Arup Kumar; Gupta, Kaushik; De, Amitabha; Sen, Pintu; Duttachowdhury, Ankan; Ghosh, Uday Chand

    2012-01-01

    Highlights: ► Synthesis and characterization of polymer nanocomposite based on titanium doped iron(III) oxide. ► Electrical conductivity increased 100 times in composite with respect to polymer. ► Electrochemical capacitance of polymer composites increased with nanooxide content. ► Thermal stability of the polymer enhanced with nano oxide content. -- Abstract: Titanium(IV)-doped synthetic nanostructured iron(III) oxide (NITO) and polypyrrole (PPy) nanocomposites was fabricated by in situ polymerization using FeCl 3 as initiator. The polymer nanocomposites (PNCs) and pure NITO were characterized by X-ray diffraction, Föurier transform infrared spectroscopy, scanning electron microscopy, electron dispersive X-ray spectroscopy, transmission electron microscopy, etc. Thermo gravimetric and differential thermal analyses showed the enhancement of thermal stability of PNCs than the pure polymer. Electrical conductivity of the PNCs had increased significantly from 0.793 × 10 −2 S/cm to 0.450 S/cm with respect to the PPy, and that had been explained by 3-dimensional variable range hopping (VRH) conduction mechanisms. In addition, the specific capacitance of PNCs had increased from 147 F/g to 176 F/g with increasing NITO content than that of pure NITO (26 F/g), presumably due to the growing of mesoporous structure with increasing NITO content in PNCs which reduced the charge transfer resistance significantly.

  9. Structural, optical and electrical properties of tin oxide thin films for application as a wide band gap semiconductor

    Energy Technology Data Exchange (ETDEWEB)

    Sethi, Riti; Ahmad, Shabir; Aziz, Anver; Siddiqui, Azher Majid, E-mail: amsiddiqui@jmi.ac.in [Department of Physics, Jamia Millia Islamia, New Delhi-110025 (India)

    2015-08-28

    Tin oxide (SnO) thin films were synthesized using thermal evaporation technique. Ultra pure metallic tin was deposited on glass substrates using thermal evaporator under high vacuum. The thickness of the tin deposited films was kept at 100nm. Subsequently, the as-deposited tin films were annealed under oxygen environment for a period of 3hrs to obtain tin oxide films. To analyse the suitability of the synthesized tin oxide films as a wide band gap semiconductor, various properties were studied. Structural parameters were studied using XRD and SEM-EDX. The optical properties were studied using UV-Vis Spectrophotometry and the electrical parameters were calculated using the Hall-setup. XRD and SEM confirmed the formation of SnO phase. Uniform texture of the film can be seen through the SEM images. Presence of traces of unoxidised Sn has also been confirmed through the XRD spectra. The band gap calculated was around 3.6eV and the optical transparency around 50%. The higher value of band gap and lower value of optical transparency can be attributed to the presence of unoxidised Sn. The values of resistivity and mobility as measured by the Hall setup were 78Ωcm and 2.92cm{sup 2}/Vs respectively. The reasonable optical and electrical parameters make SnO a suitable candidate for optoelectronic and electronic device applications.

  10. Electrical properties of indium-tin oxide films deposited on nonheated substrates using a planar-magnetron sputtering system and a facing-targets sputtering system

    International Nuclear Information System (INIS)

    Iwase, Hideo; Hoshi, Youichi; Kameyama, Makoto

    2006-01-01

    Distribution of the electrical properties of indium-tin oxide (ITO) film prepared by both a planar-magnetron sputtering system (PMSS) and a facing-targets sputtering system (FTSS) at room temperature were investigated. It was found that the outstanding non-uniformities of the electrical properties in noncrystalline ITO films are mainly due to the variation of the oxygen stoichiometry dependent on film positions on substrate surfaces. Furthermore, ITO film with uniform distribution of electrical properties was obtainable using FTSS

  11. Bismuth oxide based ceramics with improved electrical and mechanical properties: Part II. Structural and mechanical properties

    NARCIS (Netherlands)

    Kruidhof, H.; Seshan, Kulathuiyer; van de Velde, G.M.H.; de Vries, K.J.; Burggraaf, A.J.

    1988-01-01

    Coprecipitation as a method of preparation for bismuth oxides based ceramics yields relatively strong and machineable materials in comparison with the solid state reaction. Compositions within the system (1−x)Bi2O3|xEr2O3 containing up to twenty five mole percent of erbium oxide show a slow

  12. Guidance system operations plan for manned CSM earth orbital and lunar missions using program COLOSSUS 3. Section 7: Erasable memory programs

    Science.gov (United States)

    Hamilton, M. H.

    1972-01-01

    Erasable-memory programs designed for guidance computers used in command and lunar modules are presented. The purpose, functional description, assumptions, restrictions, and imitations are given for each program.

  13. Prediction of crack density and electrical resistance changes in indium tin oxide/polymer thin films under tensile loading

    KAUST Repository

    Mora Cordova, Angel

    2014-06-11

    We present unified predictions for the crack onset strain, evolution of crack density, and changes in electrical resistance in indium tin oxide/polymer thin films under tensile loading. We propose a damage mechanics model to quantify and predict such changes as an alternative to fracture mechanics formulations. Our predictions are obtained by assuming that there are no flaws at the onset of loading as opposed to the assumptions of fracture mechanics approaches. We calibrate the crack onset strain and the damage model based on experimental data reported in the literature. We predict crack density and changes in electrical resistance as a function of the damage induced in the films. We implement our model in the commercial finite element software ABAQUS using a user subroutine UMAT. We obtain fair to good agreement with experiments. © The Author(s) 2014 Reprints and permissions: sagepub.co.uk/journalsPermissions.nav.

  14. Magnetic ordering and electrical resistivity in Co0.2Zn0.8Fe2O4 spinel oxide

    International Nuclear Information System (INIS)

    Bhowmik, R.N.; Ranganathan, R.; Ghosh, B.; Kumar, S.; Chattopadhyay, S.

    2008-01-01

    We report the magnetic, Moessbauer spectroscopy and resistivity measurements in order to understand the electronic behaviour of bulk Co 0.2 Zn 0.8 Fe 2 O 4 spinel oxide. The effect of magnetic order on electrical behaviour is observed from the resistivity measurements in the absence and presence of magnetic field. The analysis of Moessbauer spectra suggests the absence of Fe 2+ ions in the system, which implies that complete hopping of charge carriers between localized Fe 3+ /Co 2+ and Fe 2+ /Co 3+ pair of ions in B sublattice is not the favourable mechanism in Co 0.2 Zn 0.8 Fe 2 O 4 . We suggest that electrical behaviour of the present sample may be consistent with a model of fractional charge transfer via Fe B 3+ -O 2- -Co B 2+ superexchange path

  15. Effect of graphite loading on the electrical and mechanical properties of Poly (Ethylene Oxide)/Poly (Vinyl Chloride) polymer films

    Science.gov (United States)

    Hajar, M. D. S.; Supri, A. G.; Hanif, M. P. M.; Yazid, M. I. M.

    2017-10-01

    In this study, films consisting of a blend of poly (ethylene oxide)/poly (vinyl chloride) (PEO/PVC) and a conductive filler, graphite were prepared and characterized for their mechanical and electrical properties. Solid polymer blend films based on PEO/PVC (50/50 wt%/wt%) with different graphite loading were prepared by using solution casting technique. Electrical conductivity results discovered the conductivity increased with increasing of filler loading. However, increasing amount of graphite loading led to a decreased in tensile strength and young’s modulus of PEO/PVC/Graphite polymer films. The dispersion of graphite and mechanism of conductive path in the polymer films were also investigated by scanning electron microscopy (SEM). The morphology of the PEO/PVC/Graphite polymer films shows that agglomeration occurred to complete the connection of conductive path, thus improving the conductivity behavior of the polymer films.

  16. Hierarchical Load Tracking Control of a Grid-connected Solid Oxide Fuel Cell for Maximum Electrical Efficiency Operation

    DEFF Research Database (Denmark)

    Li, Yonghui; Wu, Qiuwei; Zhu, Haiyu

    2015-01-01

    efficiency operation obtained at different active power output levels, a hierarchical load tracking control scheme for the grid-connected SOFC was proposed to realize the maximum electrical efficiency operation with the stack temperature bounded. The hierarchical control scheme consists of a fast active...... power control and a slower stack temperature control. The active power control was developed by using a decentralized control method. The efficiency of the proposed hierarchical control scheme was demonstrated by case studies using the benchmark SOFC dynamic model......Based on the benchmark solid oxide fuel cell (SOFC) dynamic model for power system studies and the analysis of the SOFC operating conditions, the nonlinear programming (NLP) optimization method was used to determine the maximum electrical efficiency of the grid-connected SOFC subject...

  17. Enhancement in Mechanical and Electrical Properties of Polypropylene Using Graphene Oxide Grafted with End-Functionalized Polypropylene

    Directory of Open Access Journals (Sweden)

    Patchanee Chammingkwan

    2016-03-01

    Full Text Available Terminally hydroxylated polypropylene (PP synthesized by a chain transfer method was grafted to graphene oxide (GO at the chain end. Thus obtained PP-modified GO (PP-GO was melt mixed with PP without the use of a compatibilizer to prepare PP/GO nanocomposites. Mechanical and electrical properties of the resultant nanocomposites and reference samples that contained graphite nanoplatelets, partially reduced GO, or fully reduced GO were examined. The best improvement in the tensile strength was obtained using PP-GO at 1.0 wt %. The inclusion of PP-GO also led to the highest electrical conductivity, in spite of the incomplete reduction. These observations pointed out that terminally hydroxylated PP covalently grafted to GO prevented GO layers from re-stacking and agglomeration during melt mixing, affording improved dispersion as well as stronger interfacial bonding between the matrix and GO.

  18. Electricity Recovery from Municipal Sewage Wastewater Using a Hydrogel Complex Composed of Microbially Reduced Graphene Oxide and Sludge

    Directory of Open Access Journals (Sweden)

    Naoko Yoshida

    2016-08-01

    Full Text Available Graphene oxide (GO has recently been shown to be an excellent anode substrate for exoelectrogens. This study demonstrates the applicability of GO in recovering electricity from sewage wastewater. Anaerobic incubation of sludge with GO formed a hydrogel complex that embeds microbial cells via π-π stacking of microbially reduced GO. The rGO complex was electrically conductive (23 mS·cm−1 and immediately produced electricity in sewage wastewater under polarization at +200 mV vs. Ag/AgCl. Higher and more stable production of electricity was observed with rGO complexes (179–310 μA·cm−3 than with graphite felt (GF; 79–95 μA·cm−3. Electrochemical analyses revealed that this finding was attributable to the greater capacitance and smaller internal resistance of the rGO complex. Microbial community analysis showed abundances of Geobacter species in both rGO and GF complexes, whereas more diverse candidate exoelectrogens in the Desulfarculaceae family and Geothrix genus were particularly prominent in the rGO complex.

  19. Enhancement of electricity production by graphene oxide in soil microbial fuel cells and plant microbial fuel cells

    Directory of Open Access Journals (Sweden)

    Yuko eGoto

    2015-04-01

    Full Text Available The effects of graphene oxide (GO on electricity generation in soil microbial fuel cells (SMFCs and plant microbial fuel cell (PMFCs were investigated. GO at concentrations ranging from 0 to 1.9 g•kg-1 was added to soil and reduced for 10 days under anaerobic incubation. All SMFCs (GO-SMFCs utilizing the soils incubated with GO produced electricity at a greater rate and in higher quantities than the SMFCs which did not contain GO. In fed-batch operations, the overall average electricity generation in GO-SMFCs containing 1.0 g•kg-1 of GO was 40 ± 19 mW•m-2, which was significantly higher than the value of 6.6 ± 8.9 mW•m-2 generated from GO-free SMFCs (p -2 of electricity after 27 days of operation. Collectively, this study demonstrates that GO added to soil can be microbially reduced in soil, and facilitates electron transfer to the anode in both SMFCs and PMFCs.

  20. Electrically conductive aluminum oxide thin film used as cobalt catalyst-support layer in vertically aligned carbon nanotube growth

    International Nuclear Information System (INIS)

    Azam, Mohd Asyadi; Ismail, Syahriza; Mohamad, Noraiham; Isomura, Kazuki; Shimoda, Tatsuya

    2015-01-01

    This paper will present the unique characteristics of aluminum oxide (Al–O) and cobalt catalyst included in aligned carbon nanotube (CNT) electrode system of energy storage device, namely electrochemical capacitor. Electrical conductivity and nanostructure of the thermally oxidized Al–O used as catalyst-support layer in vertically grown single-walled CNTs were studied. Al–O films were characterized by means of current–voltage measurement and high resolution transmission electron microscopy analysis. The Al–O support layer was found to be conductive, with a relatively low resistance and, approximately 20 nm film thickness of Al–O is suggested to be too thin to form insulating barrier. The scanning TEM—annular dark field analysis confirmed that the nanosized cobalt catalyst particles distributed on Al–O surfaces and also embedded inside the Al–O film structure. (paper)

  1. The synthesis of higher oxides of alkali and alkaline earth metals in an electric discharge: Theoretical and experimental studies

    Science.gov (United States)

    Bell, A. T.; Sadhukhan, P.

    1974-01-01

    Potassium hydroxide was subjected to the products of an electrical discharge sustained in oxygen and produced both potassium peroxide and superoxide. The conversion to higher oxides was shown to strongly depend upon the particle size of KOH, the position of KOH in the discharge zone, and the operating conditions of the discharge. Similar experiments were performed with hydroxides of lithium and calcium which do not form superoxides, but are converted to peroxides. The yields of peroxides were shown to strongly depend upon the operating conditions of the discharge. The absence of superoxides and the presence of peroxides of lithium and calcium was explained from the consideration of relative thermodynamic stability of the oxides of lithium and calcium. Thermogravimetric analysis was shown to provide a more accurate means for determining the amount of KO2 than previous methods.

  2. Superparamagnetic magnetite nanocrystals-graphene oxide nanocomposites: facile synthesis and their enhanced electric double-layer capacitor performance.

    Science.gov (United States)

    Wang, Qihua; Wang, Dewei; Li, Yuqi; Wang, Tingmei

    2012-06-01

    Superparamagnetic magnetite nanocrystals-graphene oxide (FGO) nanocomposites were successfully synthesized through a simple yet versatile one-step solution-processed approach at ambient conditions. Magnetite (Fe3O4) nanocrystals (NCs) with a size of 10-50 nm were uniformly deposited on the surfaces of graphene oxide (GO) sheets, which were confirmed by transmission electron microscopy (TEM) and high-angle annular dark field scanning transmission election microscopy (HAADF-STEM) studies. FGO with different Fe3O4 loadings could be controlled by simply manipulating the initial weight ratio of the precursors. The M-H measurements suggested that the as-prepared FGO nanocomposites have a large saturation magnetizations that made them can move regularly under an external magnetic field. Significantly, FGO nanocomposites also exhibit enhanced electric double-layer capacitor (EDLC) activity compared with pure Fe3O4 NCs and GO in terms of specific capacitance and high-rate charge-discharge.

  3. Characteristics of Superjunction Lateral-Double-Diffusion Metal Oxide Semiconductor Field Effect Transistor and Degradation after Electrical Stress

    Science.gov (United States)

    Lin, Jyh‑Ling; Lin, Ming‑Jang; Lin, Li‑Jheng

    2006-04-01

    The superjunction lateral double diffusion metal oxide semiconductor field effect has recently received considerable attention. Introducing heavily doped p-type strips to the n-type drift region increases the horizontal depletion capability. Consequently, the doping concentration of the drift region is higher and the conduction resistance is lower than those of conventional lateral-double-diffusion metal oxide semiconductor field effect transistors (LDMOSFETs). These characteristics may increase breakdown voltage (\\mathit{BV}) and reduce specific on-resistance (Ron,sp). In this study, we focus on the electrical characteristics of conventional LDMOSFETs on silicon bulk, silicon-on-insulator (SOI) LDMOSFETs and superjunction LDMOSFETs after bias stress. Additionally, the \\mathit{BV} and Ron,sp of superjunction LDMOSFETs with different N/P drift region widths and different dosages are discussed. Simulation tools, including two-dimensional (2-D) TSPREM-4/MEDICI and three-dimensional (3-D) DAVINCI, were employed to determine the device characteristics.

  4. High-density carrier-accumulated and electrically stable oxide thin-film transistors from ion-gel gate dielectric.

    Science.gov (United States)

    Fujii, Mami N; Ishikawa, Yasuaki; Miwa, Kazumoto; Okada, Hiromi; Uraoka, Yukiharu; Ono, Shimpei

    2015-12-18

    The use of indium-gallium-zinc oxide (IGZO) has paved the way for high-resolution uniform displays or integrated circuits with transparent and flexible devices. However, achieving highly reliable devices that use IGZO for low-temperature processes remains a technological challenge. We propose the use of IGZO thin-film transistors (TFTs) with an ionic-liquid gate dielectric in order to achieve high-density carrier-accumulated IGZO TFTs with high reliability, and we discuss a distinctive mechanism for the degradation of this organic-inorganic hybrid device under long-term electrical stress. Our results demonstrated that an ionic liquid or gel gate dielectric provides highly reliable and low-voltage operation with IGZO TFTs. Furthermore, high-density carrier accumulation helps improve the TFT characteristics and reliability, and it is highly relevant to the electronic phase control of oxide materials and the degradation mechanism for organic-inorganic hybrid devices.

  5. Short-Term Synaptic Plasticity Regulation in Solution-Gated Indium-Gallium-Zinc-Oxide Electric-Double-Layer Transistors.

    Science.gov (United States)

    Wan, Chang Jin; Liu, Yang Hui; Zhu, Li Qiang; Feng, Ping; Shi, Yi; Wan, Qing

    2016-04-20

    In the biological nervous system, synaptic plasticity regulation is based on the modulation of ionic fluxes, and such regulation was regarded as the fundamental mechanism underlying memory and learning. Inspired by such biological strategies, indium-gallium-zinc-oxide (IGZO) electric-double-layer (EDL) transistors gated by aqueous solutions were proposed for synaptic behavior emulations. Short-term synaptic plasticity, such as paired-pulse facilitation, high-pass filtering, and orientation tuning, was experimentally emulated in these EDL transistors. Most importantly, we found that such short-term synaptic plasticity can be effectively regulated by alcohol (ethyl alcohol) and salt (potassium chloride) additives. Our results suggest that solution gated oxide-based EDL transistors could act as the platforms for short-term synaptic plasticity emulation.

  6. Short review of high-pressure crystal growth and magnetic and electrical properties of solid-state osmium oxides

    Energy Technology Data Exchange (ETDEWEB)

    Yamaura, Kazunari, E-mail: YAMAURA.Kazunari@nims.go.jp [Superconducting Properties Unit, National Institute for Materials Science, 1-1 Namiki, Tsukuba, Ibaraki 305-0044 (Japan); Graduate School of Chemical Sciences and Engineering, Hokkaido University, North 10 West 8, Kita-ku, Sapporo, Hokkaido 060-0810 (Japan)

    2016-04-15

    High-pressure crystal growth and synthesis of selected solid-state osmium oxides, many of which are perovskite-related types, are briefly reviewed, and their magnetic and electrical properties are introduced. Crystals of the osmium oxides, including NaOsO{sub 3}, LiOsO{sub 3}, and Na{sub 2}OsO{sub 4}, were successfully grown under high-pressure and high-temperature conditions at 6 GPa in the presence of an appropriate amount of flux in a belt-type apparatus. The unexpected discovery of a magnetic metal–insulator transition in NaOsO{sub 3}, a ferroelectric-like transition in LiOsO{sub 3}, and high-temperature ferrimagnetism driven by a local structural distortion in Ca{sub 2}FeOsO{sub 6} may represent unique features of the osmium oxides. The high-pressure and high-temperature synthesis and crystal growth has played a central role in the development of solid-state osmium oxides and the elucidation of their magnetic and electronic properties toward possible use in multifunctional devices. - Graphical Abstract: Flux-grown crystals of NaOsO{sub 3} under high-pressure and high-temperature conditions in a belt-type apparatus. The crystal shows a magnetically driven metal–insulator transition at a temperature of 410 K. - Highlights: • Short review of high-pressure crystal growth of solid-state osmium oxides. • Wide variety of magnetic properties of solid-state osmium oxides. • Perovskite and related dense structures stabilized at 3–17 GPa.

  7. Atomically-resolved mapping of polarization and electric fields across ferroelectric-oxide interfaces by Z-contrast imaging

    Science.gov (United States)

    Borisevich, Albina; Chang, Hye Jung; Kalinin, Sergei; Morozovska, Anna; Chu, Ying-Hao; Yu, Pu; Ramesh, Ramamoorthy; Pennycook, Stephen

    2011-03-01

    Polarization, electric field, charge and potential across ferroelectric-oxide interfaces are obtained from direct atomic position mapping by aberration corrected scanning transmission electron microscopy combined with Ginsburg-Landau-Devonshire theory. We compare two antiparallel polarization orientations, which allows separation of the polarization and intrinsic interface charge contributions. Using the Born effective charges, the complete interface electrostatics is obtained in real space, providing an alternative method to holography. The results provide new microscopic insight into the thermodynamics of polarization distribution at the atomic level. Research is sponsored by the of Materials Sciences and Engineering Division, U.S. DOE.

  8. Metal-insulator transition in tin doped indium oxide (ITO) thin films: Quantum correction to the electrical conductivity

    OpenAIRE

    Deepak Kumar Kaushik; K. Uday Kumar; A. Subrahmanyam

    2017-01-01

    Tin doped indium oxide (ITO) thin films are being used extensively as transparent conductors in several applications. In the present communication, we report the electrical transport in DC magnetron sputtered ITO thin films (prepared at 300 K and subsequently annealed at 673 K in vacuum for 60 minutes) in low temperatures (25-300 K). The low temperature Hall effect and resistivity measurements reveal that the ITO thin films are moderately dis-ordered (kFl∼1; kF is the Fermi wave vector and l ...

  9. Improvement of MRR and surface roughness during electrical discharge machining (EDM) using aluminum oxide powder mixed dielectric fluid

    Science.gov (United States)

    Khan, A. A.; Mohiuddin, A. K. M.; Latif, M. A. A.

    2018-01-01

    This paper discusses the effect of aluminium oxide (Al203) addition to dielectric fluid during electrical discharge machining (EDM). Aluminium oxide was added to the dielectric used in the EDM process to improve its performance when machining the stainless steel AISI 304, while copper was used as the electrode. Effect of the concentration of Al203 (0.3 mg/L) in dielectric fluid was compared with EDM without any addition of Al203. Surface quality of stainless steel and the material removal rate were investigated. Design of the experiment (DOE) was used for the experimental plan. Statistical analysis was done using ANOVA and then appropriate model was designated. The experimental results show that with dispersing of aluminium oxide in dielectric fluid surface roughness was improved while the material removal rate (MRR) was increased to some extent. These indicate the improvement of EDM performance using aluminium oxide in dielectric fluid. It was also found that with increase in pulse on time both MRR and surface roughness increase sharply.

  10. DC electrical, thermal, and spectroscopic properties of various condensation polyimides containing surface cobalt oxide

    Science.gov (United States)

    Rancourt, J. D.; Boggess, R. K.; Horning, L. S.; Taylor, L. T.

    1987-01-01

    Doping polyimides with cobalt ion causes the room temperature direct current electrical resistivity to decrease relative to the polymer alone, the reduction being most pronounced for the air-side of the cobalt modified polyimides. At a constant electrical field, resistivity for the volume, air-side and glass-side modes decreases yet further with an increase in temperature as expected for semiconductors and insulators. X-ray photoelectron spectroscopy indicates the air-side of the cobalt modified polyimides is predominantly Co3O4. The bulk resistivity of the air-side and activation energy of conduction for this surface are comparable to high purity sintered Co3O4. Charging characteristics at room temperature indicate a substantial polymer matrix contribution to both the glass-side and volume mode measurements but a negligible contribution to the air-side electrical properties. Volume electrical resistivity for similar additive levels is reduced by increasing the molecular flexibility of the host polymer.

  11. Electrical control of memristance and magnetoresistance in oxide magnetic tunnel junctions

    KAUST Repository

    Zhang, Kun

    2015-01-01

    Electric-field control of magnetic and transport properties of magnetic tunnel junctions has promising applications in spintronics. Here, we experimentally demonstrate a reversible electrical manipulation of memristance, magnetoresistance, and exchange bias in Co/CoO–ZnO/Co magnetic tunnel junctions, which enables the realization of four nonvolatile resistance states. Moreover, greatly enhanced tunneling magnetoresistance of 68% was observed due to the enhanced spin polarization of the bottom Co/CoO interface. The ab initio calculations further indicate that the spin polarization of the Co/CoO interface is as high as 73% near the Fermi level and plenty of oxygen vacancies can induce metal–insulator transition of the CoO1−v layer. Thus, the electrical manipulation mechanism on the memristance, magnetoresistance and exchange bias can be attributed to the electric-field-driven migration of oxygen ions/vacancies between very thin CoO and ZnO layers.

  12. Electrical effect of titanium diffusion on amorphous indium gallium zinc oxide

    International Nuclear Information System (INIS)

    Choi, Seung-Ha; Jung, Woo-Shik; Park, Jin-Hong

    2012-01-01

    In this work, thermal diffusion phenomenon of Ti into amorphous indium gallium zinc oxide (α-IGZO) was carefully investigated with secondary ion mass spectroscopy, I-V, and R s measurement systems and HSC chemistry simulation tool. According to the experimental and simulated results, the diffused Ti atoms were easily oxidized due to its lowest oxidation free energy. Since oxygen atoms were decomposed from the α-IGZO during the oxidation of Ti, the number of oxygen vacancies working as electron-donating sites in α-IGZO was dramatically increased, contributing to the decrease of resistivity (ρ) from 1.96 Ω cm (as-deposited α-IGZO) to 1.33 × 10 −3 Ω cm (350 °C annealed α-IGZO).

  13. Calcium incorporation in graphene oxide particles: A morphological, chemical, electrical, and thermal study

    Energy Technology Data Exchange (ETDEWEB)

    Castro, Kelly L.S. [Instituto Nacional de Metrologia, Qualidade e Tecnologia, Av. Nossa Sra. das Graças, 50, 25250-020 Duque de Caxias (Brazil); Instituto de Química, Universidade Federal do Rio de Janeiro, Av. Athos da Silveira Ramos, 149, 21941-909 Rio de Janeiro (Brazil); Curti, Raphael V.; Araujo, Joyce R.; Landi, Sandra M.; Ferreira, Erlon H.M.; Neves, Rodrigo S.; Kuznetsov, Alexei; Sena, Lidia A. [Instituto Nacional de Metrologia, Qualidade e Tecnologia, Av. Nossa Sra. das Graças, 50, 25250-020 Duque de Caxias (Brazil); Archanjo, Braulio S., E-mail: bsarchanjo@inmetro.gov.br [Instituto Nacional de Metrologia, Qualidade e Tecnologia, Av. Nossa Sra. das Graças, 50, 25250-020 Duque de Caxias (Brazil); Achete, Carlos A. [Instituto Nacional de Metrologia, Qualidade e Tecnologia, Av. Nossa Sra. das Graças, 50, 25250-020 Duque de Caxias (Brazil); Departamento de Engenharia Metalúrgica e de Materiais, Universidade Federal do Rio de Janeiro, 21941-972 Rio de Janeiro (Brazil)

    2016-07-01

    Surface chemical modification and functionalization are common strategies used to provide new properties or functionalities to a material or to enhance existing ones. In this work, graphene oxide prepared using Hummers' method has been chemically modified with calcium ions by immersion in a calcium carbonate solution. Transmission electron microscopy analyses showed that graphene oxide (GO) and calcium incorporated graphene oxide have a morphology similar to an ultra-thin membrane composed of overlapping sheets. X-ray diffraction and Fourier-infrared spectroscopy show that calcium carbonate residue was completely removed by hydrochloric acid washes. Energy dispersive X-ray spectroscopy mapping showed spatially homogeneous calcium in Ca-incorporated graphene oxide sample after HCl washing. This Ca is mainly ionic according to X-ray photoelectron spectroscopy, and its incorporation promoted a small reduction in the graphene oxide structure, corroborated also by four-point probe measurements. A thermal study shows a remarkable increase in the GO stability with the presence of Ca{sup 2+} ions. - Highlights: • Graphene oxide has been chemically modified with Ca ions by immersion in a CaCO{sub 3} solution. • GO–Ca has morphology similar to an ultra-thin membrane composed of overlapping sheets. • CaCO{sub 3} residue was completely removed by acid washes, leaving only ionic calcium. • EDS maps show that Ca incorporation is spatially homogeneous in GO structure. • Thermal analyses show a remarkable increase in GO stability after Ca incorporation.

  14. Calcium incorporation in graphene oxide particles: A morphological, chemical, electrical, and thermal study

    International Nuclear Information System (INIS)

    Castro, Kelly L.S.; Curti, Raphael V.; Araujo, Joyce R.; Landi, Sandra M.; Ferreira, Erlon H.M.; Neves, Rodrigo S.; Kuznetsov, Alexei; Sena, Lidia A.; Archanjo, Braulio S.; Achete, Carlos A.

    2016-01-01

    Surface chemical modification and functionalization are common strategies used to provide new properties or functionalities to a material or to enhance existing ones. In this work, graphene oxide prepared using Hummers' method has been chemically modified with calcium ions by immersion in a calcium carbonate solution. Transmission electron microscopy analyses showed that graphene oxide (GO) and calcium incorporated graphene oxide have a morphology similar to an ultra-thin membrane composed of overlapping sheets. X-ray diffraction and Fourier-infrared spectroscopy show that calcium carbonate residue was completely removed by hydrochloric acid washes. Energy dispersive X-ray spectroscopy mapping showed spatially homogeneous calcium in Ca-incorporated graphene oxide sample after HCl washing. This Ca is mainly ionic according to X-ray photoelectron spectroscopy, and its incorporation promoted a small reduction in the graphene oxide structure, corroborated also by four-point probe measurements. A thermal study shows a remarkable increase in the GO stability with the presence of Ca"2"+ ions. - Highlights: • Graphene oxide has been chemically modified with Ca ions by immersion in a CaCO_3 solution. • GO–Ca has morphology similar to an ultra-thin membrane composed of overlapping sheets. • CaCO_3 residue was completely removed by acid washes, leaving only ionic calcium. • EDS maps show that Ca incorporation is spatially homogeneous in GO structure. • Thermal analyses show a remarkable increase in GO stability after Ca incorporation.

  15. Investigation of structural, morphological and electrical properties of APCVD vanadium oxide thin films

    International Nuclear Information System (INIS)

    Papadimitropoulos, Georgios; Trantalidis, Stelios; Tsiatouras, Athanasios; Vasilopoulou, Maria; Davazoglou, Dimitrios; Kostis, Ioannis

    2015-01-01

    Vanadium oxide films were chemically vapor deposited (CVD) on oxidized Si substrates covered with CVD tungsten (W) thin films and on glass substrates covered with indium tin oxide (ITO) films, using vanadium(V) oxy-tri-isopropoxide (C 9 H 21 O 4 V) vapors. X-ray diffraction (XRD) measurements showed that the deposited films were composed of a mixture of vanadium oxides; the composition was determined mainly by the deposition temperature and less by the precursor temperature. At temperatures up to 450 C the films were mostly composed by monoclinic VO 2 . Other peaks corresponding to various vanadium oxides were also observed. X-ray microanalysis confirmed the composition of the films. The surface morphology was studied with atomic force microscopy (AFM) and scanning electron microscopy (SEM). These measurements revealed that the morphology strongly depends on the used substrate and the deposition conditions. The well-known metal-insulator transition was observed near 75 C for films mostly composed by monoclinic VO 2 . Films deposited at 450 C exhibited two transitions one near 50 C and the other near 60 C possibly related to the presence of other vanadium phases or of important stresses in them. Finally, the vanadium oxide thin films exhibited significant sensory capabilities decreasing their resistance in the presence of hydrogen gas with response times in the order of a few seconds and working temperature at 40 C. (copyright 2015 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  16. Electricity and sustainable development

    International Nuclear Information System (INIS)

    Martin, D.

    2003-11-01

    The sustainable development is a political project. Its purpose is to erase the contradictions between the requirements of Environment and social development. the first article of the law of February 10, 2000 erects a sustainable electricity. For the first time. a law integrates the environmental requirements into the electrical industry. The starting point of this study is in the observation of the effects of this integration in a central sector for the developed countries. electricity is the motive of social development. However, it is carried by a Network. This network results from the confusion between the energy policy and the rules which aim at ensuring the construction and the management of structures of production and transport. Nevertheless, if the energy policy integrates the requirements of the environment, the structures subject them to a dominant social logic which aim is to satisfy an increasing demand for electricity. (author)

  17. Role of Defects and Adsorbed Water Film in Influencing the Electrical, Optical and Catalytic Properties of Transition Metal Oxides

    Science.gov (United States)

    Wang, Qi

    Transition metal oxides (TMOs) constitute a large group of materials that exhibit a wide range of optical, electrical, electrochemical, dielectric and catalytic properties, and thus making them highly regarded as promising materials for a variety of applications in next generation electronic, optoelectronic, catalytic, photonic, energy storage and energy conversion devices. Some of the unique properties of TMOs are their strong electron-electron correlations that exists between the valence electrons of narrow d- or f-shells and their ability to exist in variety of oxidation states. This gives TMOs an enormous range of fascinating electronic and other physical properties. Many of these remarkable properties of TMOs arises from the complex surface charge transfer processes at the oxide surface/electrochemical redox species interface and non-stoichiometry due to the presence of lattice vacancies that may cause significant perturbation to the electronic structure of the material. Stoichiometry, oxidation state of the metal center and lattice vacancy defects all play important roles in affecting the physical properties, electronic structures, device behavior and other functional properties of TMOs. However, the underlying relationships between them is not clearly known. For instance, the exchange of electrons between adsorbates and defects can lead to the passivation of existing defect states or formation of new defects, both of which affect defect equilibria, and consequently, functional properties. In depth understanding of the role of lattice defects on the electrical, catalytic and optical properties of TMOs is central to further expansion of the technological applications of TMO based devices. The focus of this work is to elucidate the interactions of vacancy defects with various electrochemical adsorbates in TMOs. The ability to directly probe the interactions of vacancy defects with gas and liquid phase species under in-operando conditions is highly desirable to

  18. Effect of succinonitrile on electrical, structural, optical, and thermal properties of [poly(ethylene oxide)-succinonitrile]/LiI–I2 redox-couple solid polymer electrolyte

    International Nuclear Information System (INIS)

    Gupta, Ravindra Kumar; Rhee, Hee-Woo

    2012-01-01

    Effect of succinonitrile on electrical, structural, optical, and thermal properties of [poly(ethylene oxide)-succinonitrile]/LiI–I 2 redox-couple solid polymer electrolyte is reported for the first time. For the poly(ethylene oxide)-succinonitrile blend-based electrolyte electrical conductivity was noted as high as ∼3 × 10 −4 S cm −1 at 25 °C, which is an order of magnitude higher than that of pure poly(ethylene oxide)-based electrolyte. It also exhibited relatively better pseudo-activation energy (∼0.08 eV). X-ray diffractometry, polarized optical microscopy, and differential scanning calorimetry studies revealed that succinonitrile is helpful in reducing the poly(ethylene oxide) crystallinity due to its plasticizing property. FT-IR study showed significant modification of the poly(ethylene oxide) chain conformation due to the succinonitrile.

  19. Pyrochlore type semiconducting ceramic oxides in Ca-Ce-Ti-M-O system (M = Nb or Ta)-Structure, microstructure and electrical properties

    International Nuclear Information System (INIS)

    Deepa, M.; Prabhakar Rao, P.; Radhakrishnan, A.N.; Sibi, K.S.; Koshy, Peter

    2009-01-01

    A new series of pyrochlore type ceramic semiconducting oxides in Ca-Ce-Ti-M-O (M = Nb or Ta) system has been synthesized by the conventional ceramic route. The electrical conductivity measurements show that these oxides exhibit semiconducting behavior and the conductivity increases with the Ce content in the compound. Activation energy of the current carriers is in the range of 0.5-1.6 eV. The electrical conductivity in these oxides is due to the presence of Ce 3+ , which remains in the reduced state without being oxidized to Ce 4+ by structural stabilization. The photoluminescence and X-ray photoelectron spectroscopy analysis corroborate the presence of Ce in the 3+ state. Impedance spectral analysis is carried out to evaluate the transport properties and indicates that the conduction in these compounds is mainly due to electronic contribution. The X-ray powder diffraction and Raman spectroscopy analysis establishes that these oxides belong to a cubic pyrochlore type structure.

  20. Special metallurgy - the electrical butt-welding by flashing of sintered magnesium-magnesium oxide composites (1963)

    International Nuclear Information System (INIS)

    Charleux, J.

    1963-01-01

    Electrical resistance welding has become quite important since World War II because of the need of a high yield in aeronautical production. Progress has been due in particular to the improvements made in electronically controlled apparatus making possible the automatic control of welding. For the butt-welding of sections requiring either a high production rate or a high quality weld, the flash butt-welding system has been very much developed these last few years. The use of this welding method is of great importance in the field of the bonding of oxidisable metals such as magnesium or aluminium and its alloys, because the welded joint is free from oxides. This study consists of general considerations on the flash-welding process with regard to temperature distribution in the parts during welding, and to electrical phenomena connected with flashing. Besides this general or theoretical section, we have applied the welding process to the bonding of sintered magnesium, a magnesium-magnesium oxide composite, whose use as a structural element in nuclear reactors is considered. (author) [fr

  1. Fabrication of polyaniline coated iron oxide hybrid particles and their dual stimuli-response under electric and magnetic fields

    Directory of Open Access Journals (Sweden)

    B. Sim

    2015-08-01

    Full Text Available Polyaniline (PANI-coated iron oxide (Fe3O4 sphere particles were fabricated and applied to a dual stimuliresponsive material under electric and magnetic fields, respectively. Sphere Fe3O4 particles were synthesized by a solvothermal process and protonated after acidification. The aniline monomer tended to surround the surface of the Fe3O4 core due to the electrostatic and hydrogen bond interactions. A core-shell structured product was finally formed by the oxidation polymerization of PANI on the surface of Fe3O4. The formation of Fe3O4@PANI particles was examined by scanning electron microscope and transmission electron microscope. The bond between Fe3O4 and PANI was confirmed by Fourier transform-infrared spectroscope and magnetic properties were analyzed by vibration sample magnetometer. A hybrid of a conducting and magnetic particle-based suspension displayed dual stimuli-response under electric and magnetic fields. The suspension exhibited typical electrorheological and magnetorheological behaviors of the shear stress, shear viscosity and dynamic yield stress, as determined using a rotational rheometer. Sedimentation stability was also compared between Fe3O4 and Fe3O4@PANI suspension.

  2. Optical and electrical properties of zinc oxide thin films with low resistivity via Li-N dual-acceptor doping

    Energy Technology Data Exchange (ETDEWEB)

    Zhang Daoli, E-mail: zhang_daoli@mail.hust.edu.cn [Department of Electronic Science and Technology, Huazhong University of Science and Technology, No. 1037 Luoyu Road, Hongshan District, Wuhan City, Hubei Province 430074 (China); Wuhan National Laboratory for Optoelectronics, 1037 Luoyu Road, Hongshan District, Wuhan City, Hubei Province 430074 (China); Zhang Jianbing [Department of Electronic Science and Technology, Huazhong University of Science and Technology, No. 1037 Luoyu Road, Hongshan District, Wuhan City, Hubei Province 430074 (China); Wuhan National Laboratory for Optoelectronics, 1037 Luoyu Road, Hongshan District, Wuhan City, Hubei Province 430074 (China); Guo Zhe [Department of Electronic Science and Technology, Huazhong University of Science and Technology, No. 1037 Luoyu Road, Hongshan District, Wuhan City, Hubei Province 430074 (China); Miao Xiangshui [Department of Electronic Science and Technology, Huazhong University of Science and Technology, No. 1037 Luoyu Road, Hongshan District, Wuhan City, Hubei Province 430074 (China); Wuhan National Laboratory for Optoelectronics, 1037 Luoyu Road, Hongshan District, Wuhan City, Hubei Province 430074 (China)

    2011-05-19

    Highlights: > Zinc oxide films have been deposited on glass substrates by Li-N dual-acceptor doping method via a modified SILAR method. > The resistivity of ZnO film was found to be 1.04 {Omega} cm with a Hall mobility of 0.749 cm{sup 2} V{sup -1} s{sup -1}, carrier concentration of 8.02 x 1018 cm{sup -3}, and transmittance of about 80% in visible range showing good crystallinity with prior c-axis orientation. > A shallow acceptor level of 91 meV is identified from free-to-neutral-acceptor transitions. > Another deep level of 255 meV was ascribed to Li{sub Zn}-Li{sub i} complex. - Abstract: Zinc oxide thin films with low resistivity have been deposited on glass substrates by Li-N dual-acceptor doping method via a modified successive ionic layer adsorption and reaction process. The thin films were systematically characterized via scanning electron microscopy (SEM), atomic force microscopy (AFM), X-ray diffraction, ultraviolet-visible spectrophotometry and fluorescence spectrophotometry. The resistivity of zinc oxide film was found to be 1.04 {Omega} cm with a Hall mobility of 0.749 cm{sup 2} V{sup -1} s{sup -1} and carrier concentration of 8.02 x 10{sup 18} cm{sup -3}. The Li-N dual-acceptor doped zinc oxide films showed good crystallinity with prior c-axis orientation, and high transmittance of about 80% in visible range. Moreover, the effects of Li doping level and other parameters on crystallinity, electrical and ultraviolet emission of zinc oxide films were investigated.

  3. Effects of electromagnetic radiation exposure on bone mineral density, thyroid, and oxidative stress index in electrical workers

    Directory of Open Access Journals (Sweden)

    Kunt H

    2016-02-01

    Full Text Available Halil Kunt,1,* İhsan Şentürk,2,* Yücel Gönül,3,* Mehmet Korkmaz,4 Ahmet Ahsen,5 Ömer Hazman,6 Ahmet Bal,7 Abdurrahman Genç,8 Ahmet Songur3 1Department of Science Education, Faculty of Education, Dumlupinar University, Kütahya, 2Department of Orthopedics and Traumatology, 3Department of Anatomy, Faculty of Medicine, Afyon Kocatepe University, Afyonkarahisar, 4Department of Radiology, Faculty of Medicine, Dumlupinar University, Kütahya, 5Department of Nephrology, Faculty of Medicine, 6Department of Biochemistry, Faculty of Science and Arts, 7Department of General Surgery, 8Department of Physiology, Faculty of Medicine, Afyon Kocatepe University, Afyonkarahisar, Turkey *These authors contributed equally to this work Background: In the literature, some articles report that the incidence of numerous diseases increases among the individuals who live around high-voltage electric transmission lines (HVETL or are exposed vocationally. However, it was not investigated whether HVETL affect bone metabolism, oxidative stress, and the prevalence of thyroid nodule.Methods: Dual-energy X-ray absorptiometry (DEXA bone density measurements, serum free triiodothyronine (FT3, free thyroxine (FT4, RANK, RANKL, osteoprotegerin (OPG, alkaline phosphatase (ALP, phosphor, total antioxidant status (TAS, total oxidant status (TOS, and oxidative stress index (OSI levels were analyzed to investigate this effect.Results: Bone mineral density levels of L1–L4 vertebrae and femur were observed significantly lower in the electrical workers. ALP, phosphor, RANK, RANKL, TOS, OSI, and anteroposterior diameter of the left thyroid lobe levels were significantly higher, and OPG, TAS, and FT4 levels were detected significantly lower in the study group when compared with the control group.Conclusion: Consequently, it was observed that the balance between construction and destruction in the bone metabolism of the electrical workers who were employed in HVETL replaced toward

  4. Structures and electrochemical performances of pyrolized carbons from graphite oxides for electric double-layer capacitor

    Science.gov (United States)

    Kim, Ick-Jun; Yang, Sunhye; Jeon, Min-Je; Moon, Seong-In; Kim, Hyun-Soo; Lee, Yoon-Pyo; An, Kye-Hyeok; Lee, Young-Hee

    The structural features and the electrochemical performances of pyrolized needle cokes from oxidized cokes are examined and compared with those of KOH-activated needle coke. The structure of needle coke is changed to a single phase of graphite oxide after oxidation treatment with an acidic solution having an NaClO 3/needle coke composition ratio of above 7.5, and the inter-layer distance of the oxidized needle coke is expanded to 6.9 Å with increasing oxygen content. After heating at 200 °C, the oxidized needle coke is reduced to a graphite structure with an inter-layer distance of 3.6 Å. By contrast, a change in the inter-layer distance in KOH-activated needle coke is not observed. An intercalation of pyrolized needle coke, observed on first charge, occurs at 1.0 V. This value is lower than that of KOH-activation needle coke. A capacitor using pyrolized needle coke exhibits a lower internal resistance of 0.57 Ω in 1 kHz, and a larger capacitance per weight and volume of 30.3 F g -1 and 26.9 F ml -1, in the two-electrode system over the potential range 0-2.5 V compared with those of a capacitor using KOH-activation of needle coke. This better electrochemical performance is attributed to a distorted graphene layer structure derived from the process of the inter-layer expansion and shrinkage.

  5. Intraoperative hemidiaphragm electrical stimulation reduces oxidative stress and upregulates autophagy in surgery patients undergoing mechanical ventilation: exploratory study

    Directory of Open Access Journals (Sweden)

    Robert T. Mankowski

    2016-10-01

    Full Text Available Abstract Background Mechanical ventilation (MV during a cardio-thoracic surgery contributes to diaphragm muscle dysfunction that impairs weaning and can lead to the ventilator- induced diaphragm dysfunction. Especially, it is critical in older adults who have lower muscle reparative capacity following MV. Reports have shown that the intraoperative intermittent hemidiaphragm electrical stimulation can maintain and/or improve post-surgery diaphragm function. In particular, from a molecular point of view, intermittent electrical stimulation (ES may reduce oxidative stress and increase regulatory autophagy levels, and therefore improve diaphragm function in animal studies. We have recently shown in humans that intraoperative ES attenuates mitochondrial dysfunction and force decline in single diaphragm muscle fibers. The aim of this study was to investigate an effect of ES on oxidative stress, antioxidant status and autophagy biomarker levels in the human diaphragm during surgery. Methods One phrenic nerve was simulated with an external cardiac pacer in operated older subjects (62.4 ± 12.9 years (n = 8 during the surgery. The patients received 30 pulses per min every 30 min. The muscle biopsy was collected from both hemidiaphragms and frozen for further analyses. 4-hydroxynonenal (4-HNE, an oxidative stress marker, and autophagy marker levels (Beclin-1 and the ratio of microtubule-associated protein light chain 3, I and II-LC3 II/I protein concentrations were detected by the Western Blot technique. Antioxidant enzymatic activity copper-zinc (CuZnSOD and manganese (MnSOD superoxide dismutase were analyzed. Results Levels of lipid peroxidation (4-HNE were significantly lower in the stimulated side (p  0.05. Additionally, the protein concentrations of Beclin-1 and the LC3 II/I ratio were higher in the stimulated side (p < 0.05. Conclusion These results suggest that the intraoperative electrical stimulation decreases oxidative stress levels

  6. Enhancement of the electrical characteristics of thin-film transistors with indium-zinc-tin oxide/Ag/indium-zinc-tin oxide multilayer electrodes

    Science.gov (United States)

    Oh, Dohyun; Yun, Dong Yeol; Cho, Woon-Jo; Kim, Tae Whan

    2014-08-01

    Transparent indium-zinc-tin oxide (IZTO)-based thin-film transistors (TFTs) with IZTO/Ag/IZTO multilayer electrodes were fabricated on glass substrates using a tilted dual-target radio-frequency magnetron sputtering system. The IZTO TFTs with IZTO/Ag/IZTO multilayer electrodes exhibited a high optical transmittance in a visible region. The threshold voltage, the mobility, and the on/off-current ratio of the TFTs with IZTO/Ag/IZTO multilayer electrodes were enhanced in comparison with those of the TFTs with ITO electrodes. The source/drain contact resistance of the IZTO TFTs with IZTO/Ag/IZTO multilayer electrodes was smaller than that of the IZTO TFTs with ITO electrodes, resulting in enhancement of their electrical characteristics.

  7. Structural, electrical, and electrochemical characterization of Ni--Pr oxide thick films

    Energy Technology Data Exchange (ETDEWEB)

    Mari, C; Scolari, V; Fiori, G; Pizzini, S

    1977-03-01

    Oxides with metallic conductivity could and have been used instead of noble metals as insert electrodes in aqueous solutions as well as electrodes for high temperature fuel cells and electrolyzers and as catalysts for the conversion of exhaust gases from internal combustion engines. The aim of this paper is to report the results of a physico-chemical characterization (structure, morphology, electrochemical behavior) of Ni--Pr oxides which have been proposed as electrode materials for high temperature fuel cells. The electrochemical characterization was carried out in aqueous solutions at room temperature and with solid electrolytes at high temperature. Evidence has been found in the former case for an oxide electrode type of behavior. In the high temperature case, very low overvoltage values have been observed during cathodic oxygen reduction, while the electrode undergoes a reaction with oxygen during anodic oxygen evolution.

  8. A highly sensitive and durable electrical sensor for liquid ethanol using thermally-oxidized mesoporous silicon

    Science.gov (United States)

    Harraz, Farid A.; Ismail, Adel A.; Al-Sayari, S. A.; Al-Hajry, A.; Al-Assiri, M. S.

    2016-12-01

    A capacitive detection of liquid ethanol using reactive, thermally oxidized films constructed from electrochemically synthesized porous silicon (PSi) is demonstrated. The sensor elements are fabricated as meso-PSi (pore sizes hydrophobic PSi surface exhibited almost a half sensitivity of the thermal oxide sensor. The response to water is achieved only at the oxidized surface and found to be ∼one quarter of the ethanol sensitivity, dependent on parameters such as vapor pressure and surface tension. The capacitance response retains ∼92% of its initial value after continuous nine cyclic runs and the sensors presumably keep long-term stability after three weeks storage, demonstrating excellent durability and storage stability. The observed behavior in current system is likely explained by the interface interaction due to dipole moment effect. The results suggest that the current sensor structure and design can be easily made to produce notably higher sensitivities for reversible detection of various analytes.

  9. Effect of substrate temperature on structural, optical and electrical properties of pulsed laser ablated nanostructured indium oxide films

    International Nuclear Information System (INIS)

    Beena, D.; Lethy, K.J.; Vinodkumar, R.; Mahadevan Pillai, V.P.; Ganesan, V.; Phase, D.M.; Sudheer, S.K.

    2009-01-01

    Nanocrystalline indium oxide (INO) films are deposited in a back ground oxygen pressure at 0.02 mbar on quartz substrates at different substrate temperatures (T s ) ranging from 300 to 573 K using pulsed laser deposition technique. The films are characterized using GIXRD, XPS, AFM and UV-visible spectroscopy to study the effect of substrate temperature on the structural and optical properties of films. The XRD patterns suggest that the films deposited at room temperature are amorphous in nature and the crystalline nature of the films increases with increase in substrate temperature. Films prepared at T s ≥ 473 K are polycrystalline in nature (cubic phase). Crystalline grain size calculation based on Debye Scherrer formula indicates that the particle size enhances with the increase in substrate temperature. Lattice constant of the films are calculated from the XRD data. XPS studies suggest that all the INO films consist of both crystalline and amorphous phases. XPS results show an increase in oxygen content with increase in substrate temperature and reveals that the films deposited at higher substrate temperatures exhibit better stoichiometry. The thickness measurements using interferometric techniques show that the film thickness decreases with increase in substrate temperature. Analysis of the optical transmittance data of the films shows a blue shift in the values of optical band gap energy for the films compared to that of the bulk material owing to the quantum confinement effect due to the presence of quantum dots in the films. Refractive index and porosity of the films are also investigated. Room temperature DC electrical measurements shows that the INO films investigated are having relatively high electrical resistivity in the range of 0.80-1.90 Ωm. Low temperature electrical conductivity measurements in the temperature range of 50-300 K for the film deposited at 300 K give a linear Arrhenius plot suggesting thermally activated conduction. Surface

  10. Fabrication of zinc indium oxide thin films and effect of post annealing on structural, chemical and electrical properties

    Energy Technology Data Exchange (ETDEWEB)

    Jain, Vipin Kumar, E-mail: vipinjain7678@gmail.com [Institute of Engineering and Technology, JK Lakshmipat University, Jaipur 302026 (India); Kumar, Praveen [Jawaharlal Nehru Centre for Advanced Scientific Research, Jakkur, Bangalore 560064 (India); Srivastava, Subodh; Vijay, Y.K. [Thin film and Membrane Science Laboratory, University of Rajasthan, Jaipur 302004 (India)

    2012-07-25

    Highlights: Black-Right-Pointing-Pointer ZIO films have been prepared by flash evaporation. Black-Right-Pointing-Pointer Thermal stability of ZIO films. Black-Right-Pointing-Pointer Structural, optical, electrical and other properties have been studied. - Abstract: In the present study, zinc indium oxide (ZIO) thin films were deposited on glass substrate with varying concentration (ZnO:In{sub 2}O{sub 3} - 100:0, 90:10, 70:30 and 50:50 wt.%) at room temperature by flash evaporation technique. These deposited ZIO films were annealed in vacuum to study the thermal stability and to see the effects on the structural, chemical and electrical properties. The XRD analysis indicates that crystallization of the ZIO films strongly depends on concentration of In{sub 2}O{sub 3} and post annealing where annealed films showed polycrystalline nature. The surface morphological study of the films using scanning electron microscopy (SEM) revealed the formation of nanostructured ZIO thin films. The surface composition and oxidation state were analyzed by X-ray photoelectron spectroscopy. XPS spectra shows that as the concentration of In{sub 2}O{sub 3} increases from 10 to 50 wt%, the surface composition ratio In/Zn and O/Zn increases for as-prepared and annealed ZIO films while the XPS valance band spectra manifest the electronic transitions. The electrical resistivity was found to be decreased while carrier concentration and Hall mobility increased for both types of films with increasing concentration of In{sub 2}O{sub 3}.

  11. Graphene Oxide Papers Simultaneously Doped with Mg(2+) and Cl(-) for Exceptional Mechanical, Electrical, and Dielectric Properties.

    Science.gov (United States)

    Lin, Xiuyi; Shen, Xi; Sun, Xinying; Liu, Xu; Wu, Ying; Wang, Zhenyu; Kim, Jang-Kyo

    2016-01-27

    This paper reports simultaneous modification of graphene oxide (GO) papers by functionalization with MgCl2. The Mg(2+) ions enhance both the interlayer cross-links and lateral bridging between the edges of adjacent GO sheets by forming Mg-O bonds. The improved load transfer between the GO sheets gives rise to a maximum of 200 and 400% increases in Young's modulus and tensile strength of GO papers. The intercalation of chlorine between the GO layers alters the properties of GO papers in two ways by forming ionic Cl(-) and covalent C-Cl bonds. The p-doping effect arising from Cl contributes to large enhancements in electrical conductivities of GO papers, with a remarkable 2500-fold surge in the through-thickness direction. The layered structure and the anisotropic electrical conductivities of reduced GO papers naturally create numerous nanocapacitors that lead to charge accumulation based on the Maxwell-Wagner (MW) polarization. The combined effect of much promoted dipolar polarizations due to Mg-O, C-Cl, and Cl(-) species results in an exceptionally high dielectric constant greater than 60 000 and a dielectric loss of 3 at 1 kHz by doping with 2 mM MgCl2. The excellent mechanical and electrical properties along with unique dielectric performance shown by the modified GO and rGO papers open new avenues for niche applications, such as electromagnetic interference shielding materials.

  12. Modeling and Predicting the Electrical Conductivity of Composite Cathode for Solid Oxide Fuel Cell by Using Support Vector Regression

    Science.gov (United States)

    Tang, J. L.; Cai, C. Z.; Xiao, T. T.; Huang, S. J.

    2012-07-01

    The electrical conductivity of solid oxide fuel cell (SOFC) cathode is one of the most important indices affecting the efficiency of SOFC. In order to improve the performance of fuel cell system, it is advantageous to have accurate model with which one can predict the electrical conductivity. In this paper, a model utilizing support vector regression (SVR) approach combined with particle swarm optimization (PSO) algorithm for its parameter optimization was established to modeling and predicting the electrical conductivity of Ba0.5Sr0.5Co0.8Fe0.2 O3-δ-xSm0.5Sr0.5CoO3-δ (BSCF-xSSC) composite cathode under two influence factors, including operating temperature (T) and SSC content (x) in BSCF-xSSC composite cathode. The leave-one-out cross validation (LOOCV) test result by SVR strongly supports that the generalization ability of SVR model is high enough. The absolute percentage error (APE) of 27 samples does not exceed 0.05%. The mean absolute percentage error (MAPE) of all 30 samples is only 0.09% and the correlation coefficient (R2) as high as 0.999. This investigation suggests that the hybrid PSO-SVR approach may be not only a promising and practical methodology to simulate the properties of fuel cell system, but also a powerful tool to be used for optimal designing or controlling the operating process of a SOFC system.

  13. Low-temperature thermal reduction of graphene oxide: In situ correlative structural, thermal desorption, and electrical transport measurements

    Science.gov (United States)

    Lipatov, Alexey; Guinel, Maxime J.-F.; Muratov, Dmitry S.; Vanyushin, Vladislav O.; Wilson, Peter M.; Kolmakov, Andrei; Sinitskii, Alexander

    2018-01-01

    Elucidation of the structural transformations in graphene oxide (GO) upon reduction remains an active and important area of research. We report the results of in situ heating experiments, during which electrical, mass spectrometry, X-ray photoelectron spectroscopy (XPS), Raman spectroscopy, and transmission electron microscopy (TEM) measurements were carried out correlatively. The simultaneous electrical and temperature programmed desorption measurements allowed us to correlate the onset of the increase in the electrical conductivity of GO by five orders of magnitude at about 150 °C with the maxima of the rates of desorption of H2O, CO, and CO2. Interestingly, this large conductivity change happens at an intermediate level of the reduction of GO, which likely corresponds to the point when the graphitic domains become large enough to enable percolative electronic transport. We demonstrate that the gas desorption is intimately related to (i) the changes in the chemical structure of GO detected by XPS and Raman spectroscopy and (ii) the formation of nanoscopic holes in GO sheets revealed by TEM. These in situ observations provide a better understanding of the mechanism of the GO thermal reduction.

  14. Structural and electrical characterization of bamboo-shaped C–N nanotubes–poly ethylene oxide (PEO) composite films

    International Nuclear Information System (INIS)

    Yadav, Ram Manohar; Dobal, Pramod S.

    2012-01-01

    We have prepared bamboo-shaped C–N nanotubes–polyethylene oxide (PEO) composite films by solution cast technique and investigated their structural/microstructural and electrical properties and developed a correlation between them. The formation of clean compartmentalized bamboo-shaped C–N nanotubes was confirmed by TEM. SEM investigations revealed a homogeneous dispersion of nanotubes in PEO matrix. Enhanced electrical conductivity was observed for the C–N nanotubes–PEO composites than bare PEO. The conductivity measurements on the C–N nanotubes–PEO composite films with ∼20 wt % concentration of C–N nanotubes showed an increase of eight orders (∼7.5 × 10 −8 to 6.2 S cm −1 ) of magnitude in conductivity from bare PEO film. Raman spectra showed the stress-free nature of the composites and established the bonding of nanotubes with PEO, which resulted in the variation of Raman parameters. The Raman data of composites corroborate the findings of variation in electrical conductivity.

  15. Water-dispersible small monodisperse electrically conducting antimony doped tin oxide nanoparticles

    Czech Academy of Sciences Publication Activity Database

    Peters, K.; Zeller, P.; Štefanić, G.; Skoromets, Volodymyr; Němec, Hynek; Kužel, Petr; Fattakhova-Rohlfing, D.

    2015-01-01

    Roč. 27, č. 3 (2015), 1090-1099 ISSN 0897-4756 R&D Projects: GA ČR GA13-12386S Grant - others:AVČR(CZ) M100101218 Institutional support: RVO:68378271 Keywords : conducting nanoparticles * electrical conductivity * charge transport Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 9.407, year: 2015

  16. Eraser-based eco-friendly fabrication of a skin-like large-area matrix of flexible carbon nanotube strain and pressure sensors.

    Science.gov (United States)

    Sahatiya, Parikshit; Badhulika, Sushmee

    2017-03-03

    This paper reports a new type of electronic, recoverable skin-like pressure and strain sensor, produced on a flexible, biodegradable pencil-eraser substrate and fabricated using a solvent-free, low-cost and energy efficient process. Multi-walled carbon nanotube (MWCNT) film, the strain sensing element, was patterned on pencil eraser with a rolling pin and a pre-compaction mechanical press. This induces high interfacial bonding between the MWCNTs and the eraser substrate, which enables the sensor to achieve recoverability under ambient conditions. The eraser serves as a substrate for strain sensing, as well as acting as a dielectric for capacitive pressure sensing, thereby eliminating the dielectric deposition step, which is crucial in capacitive-based pressure sensors. The strain sensing transduction mechanism is attributed to the tunneling effect, caused by the elastic behavior of the MWCNTs and the strong mechanical interlock between MWCNTs and the eraser substrate, which restricts slippage of MWCNTs on the eraser thereby minimizing hysteresis. The gauge factor of the strain sensor was calculated to be 2.4, which is comparable to and even better than most of the strain and pressure sensors fabricated with more complex designs and architectures. The sensitivity of the capacitive pressure sensor was found to be 0.135 MPa -1 .To demonstrate the applicability of the sensor as artificial electronic skin, the sensor was assembled on various parts of the human body and corresponding movements and touch sensation were monitored. The entire fabrication process is scalable and can be integrated into large areas to map spatial pressure distributions. This low-cost, easily scalable MWCNT pin-rolled eraser-based pressure and strain sensor has huge potential in applications such as artificial e-skin in flexible electronics and medical diagnostics, in particular in surgery as it provides high spatial resolution without a complex nanostructure architecture.

  17. Electrical properties of vacuum-annealed titanium-doped indium oxide films

    NARCIS (Netherlands)

    Yan, L.T.; Rath, J.K.; Schropp, R.E.I.

    2011-01-01

    Titanium-doped indium oxide (ITiO) films were deposited on Corning glass 2000 substrates at room temperature by radio frequency magnetron sputtering followed by vacuum post-annealing. With increasing deposition power, the as-deposited films showed an increasingly crystalline nature. As-deposited

  18. Ni-YSZ solid oxide fuel cell anode behavior upon redox cycling based on electrical characterization

    DEFF Research Database (Denmark)

    Klemensø, Trine; Mogensen, Mogens Bjerg

    2006-01-01

    Ni-YSZ cermets are a prevalent material used for solid oxide fuel cells. However, the cermet degrades upon redox cycling. The degradation is related to microstructural changes, but knowledge of the mechanisms has been limited. DC conductivity measurements were performed on cermets and cermets...

  19. Ni-YSZ solid oxide fuel cell anode behavior upon redox cycling based on electrical characterization

    DEFF Research Database (Denmark)

    Klemensø, Trine; Mogensen, Mogens Bjerg

    2007-01-01

    Nickel (Ni)—yttria-stabilized zirconia (YSZ) cermets are a prevalent material used for solid oxide fuel cells. The cermet degrades upon redox cycling. The degradation is related to microstructural changes, but knowledge of the mechanisms has been limited. Direct current conductivity measurements...

  20. Plasma-deposited aluminum-doped zinc oxide : controlling nucleation, growth and electrical properties

    NARCIS (Netherlands)

    Ponomarev, M.

    2012-01-01

    In this work, the Expanding Thermal Plasma (ETP) deposition technique was employed to study the growth development of ZnO:Al thin film as a transparent conductive oxide layer for sustainable applications. Characteristic for ETP-grown ZnO:Al is a gradually reducing resistivity of the growing layer

  1. Oxide Thin-Film Electronics using All-MXene Electrical Contacts

    KAUST Repository

    Wang, Zhenwei; Kim, Hyunho; Alshareef, Husam N.

    2018-01-01

    show balanced performance, including field-effect mobilities of 2.61 and 2.01 cm2 V−1 s−1 and switching ratios of 3.6 × 106 and 1.1 × 103, respectively. Further, complementary metal oxide semiconductor (CMOS) inverters are demonstrated. The CMOS

  2. Crack density and electrical resistance in indium-tin-oxide/polymer thin films under cyclic loading

    KAUST Repository

    Mora Cordova, Angel; Khan, Kamran; El Sayed, Tamer

    2014-01-01

    Here, we propose a damage model that describes the degradation of the material properties of indium-tin-oxide (ITO) thin films deposited on polymer substrates under cyclic loading. We base this model on our earlier tensile test model and show

  3. Electrical and mechanical properties of poly(ethylene oxide)/intercalated clay polymer electrolyte

    International Nuclear Information System (INIS)

    Moreno, Mabel; Quijada, Raúl; Santa Ana, María A.; Benavente, Eglantina; Gomez-Romero, Pedro; González, Guillermo

    2011-01-01

    Highlights: ► Poly(ethylene oxide)/intercalated clay nanocomposite as filler in solid poly(ethylene oxide) electrolytes. ► Nanocomposite filler improves mechanical properties, transparency, and conductivity of poly(ethylene oxide) electrolyte films. ► Nanocomposite is more effective than unmodified clay in improving polymer electrolyte properties. ► Low Li/polymer ratio avoids crystalline Li complexes, so effects mainly arise from the polymer. ► High nanocomposite/poly(ethylene oxide)-matrix affinity enhances microhomogeneity in the polyelectrolyte. - Abstract: Solvent-free solid polymer electrolytes (SPEs) based on two different poly(ethylene oxide), PEO Mw 600,000 and 4,000,000 and intercalated clays are reported. The inorganic additives used were lithiated bentonite and the nanocomposite PEO-bentonite with the same polymer used as matrix. SPE films, obtained in the scale of grams by mixing the components in a Brabender-type batch mixer and molding at 130 °C, were characterized by X-ray diffraction analysis, UV–vis spectroscopy, and thermal analysis. During the preparation of the films, the unmodified clay got intercalated in situ. Comparative analysis of ionic conductivity and mechanical properties of the films show that the conductivity increases with the inclusion of fillers, especially for the polymer with low molecular weight. This effect is more pronounced when using PEO-bentonite as additive. Under selected work conditions, avoiding the presence of crystalline lithium complexes, observed effects are mainly centered on the polymer. An explanation, considering the higher affinity between the modified clay and PEO matrix which leads to differences in the micro homogeneity degree between both types of polymer electrolytes is proposed.

  4. The Effect of Varying Ultrafast Pulse Laser Energies on the Electrical Properties of Reduced Graphene Oxide Sheets in Solution

    Science.gov (United States)

    Ibrahim, Khaled H.; Irannejad, Mehrdad; Wales, Benjamin; Sanderson, Joseph; Musselman, Kevin P.; Yavuz, Mustafa

    2018-02-01

    Laser treatment of graphene oxide solution among other techniques is a well-established technique for producing reduced graphene sheets. However, production of high-quality ultra-low sheet resistance reduced graphene oxide (rGO) sheets in solution has been a challenge due to their high degree of randomness, defect-rich medium, and lack of controlability. Recent studies lack an in-depth analytic comparison of laser treatment parameters that yield the highest quality rGO sheets with a low defect ratio. Hence, in this study, we implement a comprehensive comparison of laser treatment parameters and their effect on the yielded rGO sheets from an electronic and physical standpoint. Ultra-low sheet resistance graphene oxide sheets were fabricated using ultrafast laser irradiation with different laser pulse energies in the range of 0.25-2 mJ. Laser treatment for 10 min using a pulse energy of 1 mJ resulted in an increase in the defect spacing, accompanied by a large red shift in the optical absorption of the C=C bond, indicating significant restoration of the s p 2 carbon bonds. These enhancements resulted in a significant reduction in the electrical resistance of the rGO flakes (up to 2 orders of magnitude), raising the electron mobility of the films produced using the irradiated graphene oxide a step closer to that of pristine graphene films. From this study, we can also deduce which exposure regimes result in the fabrication of quantum dots and continuous defect-free films.

  5. Structural, optical and electrical peculiarities of r.f. plasma sputtered indium tin oxide films

    International Nuclear Information System (INIS)

    Boycheva, Sylvia; Sytchkova, Anna Krasilnikova; Grilli, Maria Luisa; Piegari, Angela

    2007-01-01

    In this work the influence of the deposition conditions on the structural, electrical and optical properties of the ITO films was studied. Films were deposited by r.f. plasma sputtering technique in Ar and varying Ar + O 2 gas mixtures, with and without substrate heating. Transmittance and reflectance of the films were measured in the range 350-2500 nm; the refractive index (n) and the extinction coefficient (k) were calculated by the spectral data simulation. The sheet resistance of the films was measured by four-point probe method. X-ray diffraction analysis was performed to study the texture of the films. Threshold behaviour was observed in the optical and electrical properties of ITO films deposited in Ar + O 2 atmosphere at a certain oxygen concentration determined by a fix combination of all other deposition conditions. A schematic diagram for the change of the film properties versus composition was suggested, which explains the obtained results

  6. Size effects on electrical properties of chemically grown zinc oxide nanoparticles

    Science.gov (United States)

    Rathod, K. N.; Joshi, Zalak; Dhruv, Davit; Gadani, Keval; Boricha, Hetal; Joshi, A. D.; Solanki, P. S.; Shah, N. A.

    2018-03-01

    In the present article, we study ZnO nanoparticles grown by cost effective sol–gel technique for various electrical properties. Structural studies performed by x-ray diffraction (XRD) revealed hexagonal unit cell phase with no observed impurities. Transmission electron microscopy (TEM) and particle size analyzer showed increased average particle size due to agglomeration effect with higher sintering. Dielectric constant (ε‧) decreases with increase in frequency because of the disability of dipoles to follow higher electric field. With higher sintering, dielectric constant reduced owing to the important role of increased formation of oxygen vacancy defects. Universal dielectric response (UDR) was verified by straight line fitting of log (fε‧) versus log (f) plots. All samples exhibit UDR behavior and with higher sintering more contribution from crystal cores. Impedance studies suggest an important role of boundary density while Cole–Cole (Z″ versus Z‧) plots have been studied for the relaxation behavior of the samples. Average normalized change (ANC) in impedance has been studied for all the samples wherein boundaries play an important role. Frequency dependent electrical conductivity has been understood on the basis of Jonscher’s universal power law. Jonscher’s law fits suggest that conduction of charge carrier is possible in the context of correlated barrier hopping (CBH) mechanism for lower temperature sintered sample while for higher temperature sintered ZnO samples, Maxwell–Wagner (M–W) relaxation process has been determined.

  7. Modification of electrical properties of zinc oxide by continuous wave ytterbium fiber laser irradiation

    International Nuclear Information System (INIS)

    Kido, H; Takahashi, M; Tani, J; Abe, N; Tsukamoto, M

    2011-01-01

    The polycrystalline plate-like ZnO samples were irradiated by a continuous wave Yb fiber laser and electrical properties of modified layer were investigated. The laser beam of spot size of 16 μm in diameter was scanned on the surface at a velocity of 5mm/s. There was a threshold for the laser modification. The laser etched grooves were formed above laser power of 20 W. The laser etched depth increased in relation to the laser power, 0.46 mm at 20 W and 5.0 mm at 126 W. The surface layers of laser etched grooves were modified in color and electrical property. The color changed from light yellow to black, and the electrical resistivity drastically decreased from initial value of 1.1x10 5 Ωcm to 3.2x10 -1 Ωcm at 56 W, 2.8x10 -1 Ωcm at 91 W, and 2.0x10 -1 Ωcm at 126 W. The Hall measurement showed that the modified surface layer was an n-type semiconductor and carrier concentration of the layer was 1.5x10 17 cm -3 at 56 W, 7.2x10 17 cm -3 at 91 W, and 1.9x10 18 cm -3 at 126 W.

  8. Modification of electrical properties of zinc oxide by continuous wave ytterbium fiber laser irradiation

    Energy Technology Data Exchange (ETDEWEB)

    Kido, H; Takahashi, M; Tani, J [Electronic Materials Research Division, Osaka Municipal Technical Research Institute, 1-6-50 Morinomiya, Joto-ku, Osaka 536-8553 (Japan); Abe, N; Tsukamoto, M, E-mail: kido@omtri.or.jp [Joining and Welding Research Institute, Osaka University, 11-1 Mihogaoka, Ibaraki, Osaka 567-0047 (Japan)

    2011-05-15

    The polycrystalline plate-like ZnO samples were irradiated by a continuous wave Yb fiber laser and electrical properties of modified layer were investigated. The laser beam of spot size of 16 {mu}m in diameter was scanned on the surface at a velocity of 5mm/s. There was a threshold for the laser modification. The laser etched grooves were formed above laser power of 20 W. The laser etched depth increased in relation to the laser power, 0.46 mm at 20 W and 5.0 mm at 126 W. The surface layers of laser etched grooves were modified in color and electrical property. The color changed from light yellow to black, and the electrical resistivity drastically decreased from initial value of 1.1x10{sup 5} {Omega}cm to 3.2x10{sup -1} {Omega}cm at 56 W, 2.8x10{sup -1} {Omega}cm at 91 W, and 2.0x10{sup -1} {Omega}cm at 126 W. The Hall measurement showed that the modified surface layer was an n-type semiconductor and carrier concentration of the layer was 1.5x10{sup 17} cm{sup -3} at 56 W, 7.2x10{sup 17} cm{sup -3} at 91 W, and 1.9x10{sup 18} cm{sup -3} at 126 W.

  9. Investigation of Electrical and Optical Characteristics of Nanohybride Composite (Polyvinyl Alcohol / Nickel Oxide

    Directory of Open Access Journals (Sweden)

    A. Hayati

    2014-01-01

    Full Text Available Some issues; leakage, tunneling currents, boron diffusion are threatening SiO2 to be used as a good gate dielectric for the future of the CMOS (complementary metal- oxide- semiconductor transistors. For finding an alternative and novel gate dielectric, the NiO (Nickel oxide and PVA (polyvinyl alcohol nano powders were synthesized with the sol-gel method and their nano structural properties were studied using the X-ray diffraction (XRD, Atomic force microscopy (AFM, Scanning electron microscopy (SEM, UV-Vis spectrophotometer and GPS 132 techniques. The obtained results indicated that the sample (5 g NiO and 0.02g PVA prepared at 30˚C, annealed in an oven at a temperature of 80˚C can fill this gap due to its higher dielectric constant, better morphology, less rough surface and less leakage current.

  10. Electrical and optical properties of thin indium tin oxide films produced by pulsed laser ablation in oxygen or rare gas atmospheres

    DEFF Research Database (Denmark)

    Thestrup, B.; Schou, Jørgen; Nordskov, A.

    1999-01-01

    Films of indium tin oxide (ITO) have been produced in different background gases by pulsed laser deposition (PLD). The Films deposited in rare gas atmospheres on room temperature substrates were metallic, electrically conductive, but had poor transmission of visible light. For substrate temperatu......Films of indium tin oxide (ITO) have been produced in different background gases by pulsed laser deposition (PLD). The Films deposited in rare gas atmospheres on room temperature substrates were metallic, electrically conductive, but had poor transmission of visible light. For substrate...

  11. Structural, Optical and Electrical Properties of Transparent Conducting Oxide Based on Al Doped ZnO Prepared by Spray Pyrolysis

    Directory of Open Access Journals (Sweden)

    Abdeslam DOUAYAR

    2014-05-01

    Full Text Available Aluminum doped zinc oxide (AZO thin films were deposited on glass substrates at 350 °C by spray pyrolysis technique. X-ray diffraction patterns show that the undoped and AZO films exhibit the hexagonal wűrtzite crystal structure with a preferential orientation along 2 direction. AFM images showed that AZO film with 3 % of Al has a uniform grain sizes with a surface roughness of about 24 nm. All films present a high transmittance in the visible range. Both undoped and AZO films were n-type degenerate semiconductor and the best electrical resistivity value was around 8.0 ´ 10- 2 W.cm obtained for 3 % Al content.

  12. Crystalline-like temperature dependence of the electrical characteristics in amorphous Indium-Gallium-Zinc-Oxide thin film transistors

    Science.gov (United States)

    Estrada, M.; Hernandez-Barrios, Y.; Cerdeira, A.; Ávila-Herrera, F.; Tinoco, J.; Moldovan, O.; Lime, F.; Iñiguez, B.

    2017-09-01

    A crystalline-like temperature dependence of the electrical characteristics of amorphous Indium-Gallium-Zinc-Oxide (a-IGZO) thin film transistors (TFTs) is reported, in which the drain current reduces as the temperature is increased. This behavior appears for values of drain and gate voltages above which a change in the predominant conduction mechanism occurs. After studying the possible conduction mechanisms, it was determined that, for gate and drain voltages below these values, hopping is the predominant mechanism with the current increasing with temperature, while for values above, the predominant conduction mechanism becomes percolation in the conduction band or band conduction and IDS reduces as the temperature increases. It was determined that this behavior appears, when the effect of trapping is reduced, either by varying the density of states, their characteristic energy or both. Simulations were used to further confirm the causes of the observed behavior.

  13. Dependence of electrical and optical properties of sol-gel prepared undoped cadmium oxide thin films on annealing temperature

    International Nuclear Information System (INIS)

    Santos-Cruz, J.; Torres-Delgado, G.; Castanedo-Perez, R.; Jimenez-Sandoval, S.; Jimenez-Sandoval, O.; Zuniga-Romero, C.I.; Marquez Marin, J.; Zelaya-Angel, O.

    2005-01-01

    The effect of the annealing temperature (T a ) on the optical, electrical and structural properties of the undoped cadmium oxide (CdO) thin films obtained by the sol-gel method, using a simple precursor solution, was studied. All the CdO films annealed in the range from 200 to 450 deg. C are polycrystalline with (111) preferential orientation and present high optical transmission > 85% for wavelengths above 500 nm. The resistivity decreases as T a increases until it reaches a value of 6 x 10 -4 Ω cm for T a 350 deg. C. For higher temperatures the resistivity experiences a slight increase. Images obtained by atomic force microscopy show an evident incremental change of the aggregate size (clusters of grains) as T a increases. The grain size also increases when T a increases as observed in data calculated from X-ray measurements

  14. Review of direct electrical heating experiments on irradiated mixed-oxide fuel

    International Nuclear Information System (INIS)

    Fenske, G.R.; Bandyopadhyay, G.

    1982-01-01

    Results of approximately 50 out-of-reactor experiments that simulated various stages of a loss-of-flow event with irradiated fuel are presented. The tests, which utilized the direct electrical heating technique to simulate nuclear heating, were performed either on fuel segments with their original cladding intact or on fuel segments that were extruded into quartz tubes. The test results demonstrated that the macro- and microscopic fuel behavior was dependent on a number of variables including fuel heating rate, thermal history prior to a transient, the number of heating cycles, type of cladding (quartz vs stainless steel), and fuel burnup

  15. Electric Double Layer at Metal Oxide Surfaces: Static Properties of the Cassiterite-Water Interface

    Czech Academy of Sciences Publication Activity Database

    Vlček, Lukáš; Zhang, Z.; Machesky, M.L.; Fenter, P.; Rosenqvist, J.; Wesolowski, D.J.; Anovitz, L. M.; Předota, Milan; Cummings, P.T.

    2007-01-01

    Roč. 23, č. 9 (2007), s. 4925-4937 ISSN 0743-7463 Grant - others:OBES(US) DE-AC05-00OR22727; OBES(US) DE-AC02-05CH11231; OBES(US) DE-AC02-06CH11357 Institutional research plan: CEZ:AV0Z40720504 Source of funding: N - neverejné zdroje ; N - neverejné zdroje ; N - neverejné zdroje Keywords : electric double layer * cassiterite * water Subject RIV: CF - Physical ; Theoretical Chemistry Impact factor: 4.009, year: 2007

  16. 2015 Progress Report/July 2016: Iron Oxide Redox Transformation Pathways: The Bulk Electrical Conduction Mechanism

    Energy Technology Data Exchange (ETDEWEB)

    Scherer, Michelle M. [Univ. of Iowa, Iowa City, IA (United States); Rosso, Kevin M. [Pacific Northwest National Lab. (PNNL), Richland, WA (United States)

    2016-07-25

    Despite decades of research on the reactivity and stable isotope properties of Fe oxides, the ability to describe the redox behavior of Fe oxides in the environment is still quite limited. This is due, in large part, to the analytical and spatial complexities associated with studying microscopic processes at the Fe oxide-water interface. This project had the long-term vision of filling this gap by developing a detailed understanding of the relationship between interfacial ET processes, surface structure and charge, and mineral semiconducting properties. We focused on the Fe(III)-oxides and oxyhydroxides because of their geochemical preponderance, versatility in synthesis of compositionally, structurally, and morphologically tailored phases, and because they are amenable to a wide range of surface and bulk properties characterization. In particular, reductive transformation of phases such as hematite (α-Fe2O3) and goethite (α-FeOOH) in aqueous solution can serve as excellent model systems for studies of electron conduction processes, as well as provide valuable insights into effect of nanoscale conductive materials on contaminant fate at DOE sites. More specifically, the goal of the Iowa component of this project was to use stable Fe isotope measurements to simultaneously measure isotope specific oxidation states and concentrations of Fe at the hematite-water and goethite-water interface. This work builds on our previous work where we used an innovative combination of 57Fe Mössbauer spectroscopy and high precision isotope ratio measurements (MC-ICP-MS) to probe the dynamics of the reaction of aqueous Fe(II) with goethite. Mössbauer spectroscopy detects 57Fe only among all other Fe isotopes and we have capitalized on this to spectroscopically demonstrate Fe(II)-Fe(III) electron transfer between sorbed Fe(II) and Fe(III) oxides (Handler, et al., 2009; Gorski, et al. 2010; Rosso et al., 2010). By combining the M

  17. Effect of Cr doping on the structural, morphological, optical and electrical properties of indium tin oxide films

    Science.gov (United States)

    Mirzaee, Majid; Dolati, Abolghasem

    2015-03-01

    We report on the preparation and characterization of high-purity chromium (0.5-2.5 at.%)-doped indium tin oxide (ITO, In:Sn = 90:10) films deposited by sol-gel-mediated dip coating. The effects of different Cr-doping contents on structural, morphological, optical and electrical properties of the films were characterized by means of X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), field emission scanning electron microscopy (FESEM), UV-Vis spectroscopy and four-point probe methods. XRD showed high phase purity cubic In2O3 and indicated a contraction of the lattice with Cr doping. FESEM micrographs show that grain size decreased with increasing the Cr-doping content. A method to determine chromium species in the sample was developed through the decomposition of the Cr 2 p XPS spectrum in Cr6+ and Cr3+ standard spectra. Optical and electrical studies revealed that optimum opto-electronic properties, including minimum sheet resistance of 4,300 Ω/Sq and an average optical transmittance of 85 % in the visible region with a band gap of 3.421 eV, were achieved for the films doped with Cr-doping content of 2 at.%.

  18. Electrical properties of Au/CdZnTe/Au detectors grown by the boron oxide encapsulated Vertical Bridgman technique

    Energy Technology Data Exchange (ETDEWEB)

    Turturici, A.A. [Dipartimento di Fisica e Chimica, Università di Palermo, Viale delle Scienze, Edificio 18, Palermo 90128 (Italy); Abbene, L., E-mail: leonardo.abbene@unipa.it [Dipartimento di Fisica e Chimica, Università di Palermo, Viale delle Scienze, Edificio 18, Palermo 90128 (Italy); Gerardi, G. [Dipartimento di Fisica e Chimica, Università di Palermo, Viale delle Scienze, Edificio 18, Palermo 90128 (Italy); Benassi, G. [due2lab s.r.l., Via Paolo Borsellino 2, Scandiano, 42019 Reggio Emilia (Italy); Bettelli, M.; Calestani, D. [IMEM/CNR, Parco Area delle Scienze 37/A, Parma 43100 (Italy); Zambelli, N. [due2lab s.r.l., Via Paolo Borsellino 2, Scandiano, 42019 Reggio Emilia (Italy); Raso, G. [Dipartimento di Fisica e Chimica, Università di Palermo, Viale delle Scienze, Edificio 18, Palermo 90128 (Italy); Zappettini, A. [IMEM/CNR, Parco Area delle Scienze 37/A, Parma 43100 (Italy); Principato, F. [Dipartimento di Fisica e Chimica, Università di Palermo, Viale delle Scienze, Edificio 18, Palermo 90128 (Italy)

    2016-09-11

    In this work we report on the results of electrical characterization of new CdZnTe detectors grown by the Boron oxide encapsulated Vertical Bridgman technique (B-VB), currently produced at IMEM-CNR (Parma, Italy). The detectors, with gold electroless contacts, have different thicknesses (1 and 2.5 mm) and the same electrode layout, characterized by a central anode surrounded by a guard-ring electrode. Investigations on the charge transport mechanisms and the electrical contact properties, through the modeling of the measured current–voltage (I–V) curves, were performed. Generally, the detectors are characterized by low leakage currents at high bias voltages even at room temperature: 34 nA/cm{sup 2} (T=25 °C) at 10,000 V/cm, making them very attractive for high flux X-ray measurements, where high bias voltage operation is required. The Au/CdZnTe barrier heights of the devices were estimated by using the interfacial layer-thermionic-diffusion (ITD) model in the reverse bias voltage range. Comparisons with CdZnTe detectors, grown by Traveling Heater Method (THM) and characterized by the same electrode layout, deposition technique and resistivity, were also performed.

  19. Studies on the Electrical Properties of Graphene Oxide-Reinforced Poly (4-Styrene Sulfonic Acid) and Polyvinyl Alcohol Blend Composites

    Science.gov (United States)

    Deshmukh, Kalim; Sankaran, Sowmya; Basheer Ahamed, M.; Khadheer Pasha, S. K.; Sadasivuni, Kishor Kumar; Ponnamma, Deepalekshmi; Al-Ali Almaadeed, Mariam; Chidambaram, K.

    In the present study, graphene oxide (GO)-reinforced poly (4-styrenesulfonic acid) (PSSA)/polyvinyl alcohol (PVA) blend composite films were prepared using colloidal blending technique at various concentrations of GO (0-3wt.%). The morphological investigations of the prepared composites were carried out using polarized optical microscopy and scanning electron microscopy. The electrical properties of composites were evaluated using an impedance analyzer in the frequency range 50Hz to 20MHz and temperature in the range 40-150∘C. Morphological studies infer that GO was homogeneously dispersed in the PSSA/PVA blend matrix. Investigations of electrical property indicate that the incorporation of GO into PSSA/PVA blend matrix resulted in the enhancement of the impedance (Z) and the quality factor (Q-factor) values. A maximum impedance of about 4.32×106Ω was observed at 50Hz and 90∘C for PSSA/PVA/GO composites with 3wt.% GO loading. The Q-factor also increased from 8.37 for PSSA/PVA blend to 59.8 for PSSA/PVA/GO composites with 3wt.% GO loading. These results indicate that PSSA/PVA/GO composites can be used for high-Q capacitor applications.

  20. Relationship between electronic structure and electric conductivity of double rhodium oxides from X-ray spectral data

    International Nuclear Information System (INIS)

    Firsov, M.N.; Nefedov, V.I.; Shaplygin, I.S.

    1983-01-01

    Quantum yield spectra of X-ray photoemission of O K - and Rh M 3 -bands of double rhodium oxides with Be, Mg, Ca, Sr, Ba, Cd, V, Nb, Ta, Mo, W are obtained. Quantum yield spectra are analogous to absorption spectra and reflect vacant states in a crystal, in particular, the quantum yield spectrum of O K-band is associated with oxygen vacant states of p-symmetry while Rh M 3 -band spectrum with rhomium vacant states of d-symmetry. In all rhodium compounds investigated the first vacant band is formed by the rhodium 4d-states. The forbidden zone between the last occupied and first free states of rhodiUm has a small width (eV fractions), which explains the semiconductor character of electric conductivity of the investigated compounds. Electric resistance variation in investigated series of rhodium compounds is in agreement with peculiarities of their electronic structure and entirely depends on variation in the electron density on rhodium atoms

  1. Hierarchical Load Tracking Control of a Grid-Connected Solid Oxide Fuel Cell for Maximum Electrical Efficiency Operation

    Directory of Open Access Journals (Sweden)

    Yonghui Li

    2015-03-01

    Full Text Available Based on the benchmark solid oxide fuel cell (SOFC dynamic model for power system studies and the analysis of the SOFC operating conditions, the nonlinear programming (NLP optimization method was used to determine the maximum electrical efficiency of the grid-connected SOFC subject to the constraints of fuel utilization factor, stack temperature and output active power. The optimal operating conditions of the grid-connected SOFC were obtained by solving the NLP problem considering the power consumed by the air compressor. With the optimal operating conditions of the SOFC for the maximum efficiency operation obtained at different active power output levels, a hierarchical load tracking control scheme for the grid-connected SOFC was proposed to realize the maximum electrical efficiency operation with the stack temperature bounded. The hierarchical control scheme consists of a fast active power control and a slower stack temperature control. The active power control was developed by using a decentralized control method. The efficiency of the proposed hierarchical control scheme was demonstrated by case studies using the benchmark SOFC dynamic model.

  2. The influence of reduced graphene oxide on electrical conductivity of LiFePO4-based composite as cathode material

    International Nuclear Information System (INIS)

    Arifin, Muhammad; Aimon, Akfiny Hasdi; Winata, Toto; Abdullah, Mikrajuddin; Iskandar, Ferry

    2016-01-01

    LiFePO 4 is fascinating cathode active materials for Li-ion batteries application because of their high electrochemical performance such as a stable voltage at 3.45 V and high specific capacity at 170 mAh.g −1 . However, their low intrinsic electronic conductivity and low ionic diffusion are still the hindrance for their further application on Li-ion batteries. Therefore, the efforts to improve their conductivity are very important to elevate their prospecting application as cathode materials. Herein, we reported preparation of additional of reduced Graphene Oxide (rGO) into LiFePO 4 -based composite via hydrothermal method and the influence of rGO on electrical conductivity of LiFePO 4 −based composite by varying mass of rGO in composition. Vibration of LiFePO 4 -based composite was detected on Fourier Transform Infrared Spectroscopy (FTIR) spectra, while single phase of LiFePO 4 nanocrystal was observed on X-Ray Diffraction (XRD) pattern, it furthermore, Scanning Electron Microscopy (SEM) images showed that rGO was distributed around LiFePO4-based composite. Finally, the 4-point probe measurement result confirmed that the optimum electrical conductivity is in additional 2 wt% rGO for range 1 to 2 wt% rGO

  3. Morphological Influence of Solution-Processed Zinc Oxide Films on Electrical Characteristics of Thin-Film Transistors

    Directory of Open Access Journals (Sweden)

    Hyeonju Lee

    2016-10-01

    Full Text Available We report on the morphological influence of solution-processed zinc oxide (ZnO semiconductor films on the electrical characteristics of ZnO thin-film transistors (TFTs. Different film morphologies were produced by controlling the spin-coating condition of a precursor solution, and the ZnO films were analyzed using atomic force microscopy, X-ray diffraction, X-ray photoemission spectroscopy, and Hall measurement. It is shown that ZnO TFTs have a superior performance in terms of the threshold voltage and field-effect mobility, when ZnO crystallites are more densely packed in the film. This is attributed to lower electrical resistivity and higher Hall mobility in a densely packed ZnO film. In the results of consecutive TFT operations, a positive shift in the threshold voltage occurred irrespective of the film morphology, but the morphological influence on the variation in the field-effect mobility was evident. The field-effect mobility in TFTs having a densely packed ZnO film increased continuously during consecutive TFT operations, which is in contrast to the mobility decrease observed in the less packed case. An analysis of the field-effect conductivities ascribes these results to the difference in energetic traps, which originate from structural defects in the ZnO films. Consequently, the morphological influence of solution-processed ZnO films on the TFT performance can be understood through the packing property of ZnO crystallites.

  4. Electrical properties improvement of multicrystalline silicon solar cells using a combination of porous silicon and vanadium oxide treatment

    International Nuclear Information System (INIS)

    Derbali, L.; Ezzaouia, H.

    2013-01-01

    In this paper, we will report the enhancement of the conversion efficiency of multicrystalline silicon solar cells after coating the front surface with a porous silicon layer treated with vanadium oxide. The incorporation of vanadium oxide into the porous silicon (PS) structure, followed by a thermal treatment under oxygen ambient, leads to an important decrease of the surface reflectivity, a significant enhancement of the effective minority carrier lifetime (τ eff ) and a significant enhancement of the photoluminescence (PL) of the PS structure. We Obtained a noticeable increase of (τ eff ) from 3.11 μs to 134.74 μs and the surface recombination velocity (S eff ) have decreased from 8441 cm s −1 to 195 cm s −1 . The reflectivity spectra of obtained films, performed in the 300–1200 nm wavelength range, show an important decrease of the average reflectivity from 40% to 5%. We notice a significant improvement of the internal quantum efficiency (IQE) in the used multicrystalline silicon substrates. Results are analyzed and compared to those carried out on a reference (untreated) sample. The electrical properties of the treated silicon solar cells were improved noticeably as regard to the reference (untreated) sample.

  5. Phase coexistence and electric-field control of toroidal order in oxide superlattices.

    Science.gov (United States)

    Damodaran, A R; Clarkson, J D; Hong, Z; Liu, H; Yadav, A K; Nelson, C T; Hsu, S-L; McCarter, M R; Park, K-D; Kravtsov, V; Farhan, A; Dong, Y; Cai, Z; Zhou, H; Aguado-Puente, P; García-Fernández, P; Íñiguez, J; Junquera, J; Scholl, A; Raschke, M B; Chen, L-Q; Fong, D D; Ramesh, R; Martin, L W

    2017-10-01

    Systems that exhibit phase competition, order parameter coexistence, and emergent order parameter topologies constitute a major part of modern condensed-matter physics. Here, by applying a range of characterization techniques, and simulations, we observe that in PbTiO 3 /SrTiO 3 superlattices all of these effects can be found. By exploring superlattice period-, temperature- and field-dependent evolution of these structures, we observe several new features. First, it is possible to engineer phase coexistence mediated by a first-order phase transition between an emergent, low-temperature vortex phase with electric toroidal order and a high-temperature ferroelectric a 1 /a 2 phase. At room temperature, the coexisting vortex and ferroelectric phases form a mesoscale, fibre-textured hierarchical superstructure. The vortex phase possesses an axial polarization, set by the net polarization of the surrounding ferroelectric domains, such that it possesses a multi-order-parameter state and belongs to a class of gyrotropic electrotoroidal compounds. Finally, application of electric fields to this mixed-phase system permits interconversion between the vortex and the ferroelectric phases concomitant with order-of-magnitude changes in piezoelectric and nonlinear optical responses. Our findings suggest new cross-coupled functionalities.

  6. Spectroelectrochemical properties of ultra-thin indium tin oxide films under electric potential modulation

    Energy Technology Data Exchange (ETDEWEB)

    Han, Xue, E-mail: x0han004@louisville.edu; Mendes, Sergio B., E-mail: sbmend01@louisville.edu

    2016-03-31

    In this work, the spectroscopic properties of ultra-thin ITO films are characterized under an applied electric potential modulation. To detect minute spectroscopic features, the ultra-thin ITO film was coated over an extremely sensitive single-mode integrated optical waveguide, which provided a long pathlength with more than adequate sensitivity for optical interrogation of the ultra-thin film. Experimental configurations with broadband light and several laser lines at different modulation schemes of an applied electric potential were utilized to elucidate the nature of intrinsic changes. The imaginary component of the refractive index (absorption coefficient) of the ultra-thin ITO film is unequivocally shown to have a dependence on the applied potential and the profile of this dependence changes substantially even for wavelengths inside a small spectral window (500–600 nm). The characterization technique and the data reported here can be crucial to several applications of the ITO material as a transparent conductive electrode, as for example in spectroelectrochemical investigations of surface-confined redox species. - Highlights: • Optical waveguides are applied for spectroscopic investigations of ultra-thin films. • Ultra-thin ITO films in aqueous environment are studied under potential modulation. • Unique spectroscopic features of ultra-thin ITO films are unambiguously observed.

  7. Phase coexistence and electric-field control of toroidal order in oxide superlattices

    International Nuclear Information System (INIS)

    Damodaran, A. R.; Clarkson, J. D.; Hong, Z.

    2017-01-01

    Systems that exhibit phase competition, order parameter coexistence, and emergent order parameter topologies constitute a major part of modern condensed-matter physics. Here, by applying a range of characterization techniques, and simulations, we observe that in PbTiO 3 /SrTiO 3 superlattices all of these effects can be found. By exploring superlattice period-, temperature- and field-dependent evolution of these structures, we observe several new features. First, it is possible to engineer phase coexistence mediated by a first-order phase transition between an emergent, low-temperature vortex phase with electric toroidal order and a high-temperature ferroelectric a 1 /a 2 phase. At room temperature, the coexisting vortex and ferroelectric phases form a mesoscale, fibre-textured hierarchical superstructure. The vortex phase possesses an axial polarization, set by the net polarization of the surrounding ferroelectric domains, such that it possesses a multi-order-parameter state and belongs to a class of gyrotropic electrotoroidal compounds. Finally, application of electric fields to this mixed-phase system permits interconversion between the vortex and the ferroelectric phases concomitant with order-of-magnitude changes in piezoelectric and nonlinear optical responses. Here, our findings suggest new cross-coupled functionalities.

  8. Improvement of Electrical Characteristics and Stability of Amorphous Indium Gallium Zinc Oxide Thin Film Transistors Using Nitrocellulose Passivation Layer.

    Science.gov (United States)

    Shin, Kwan Yup; Tak, Young Jun; Kim, Won-Gi; Hong, Seonghwan; Kim, Hyun Jae

    2017-04-19

    In this research, nitrocellulose is proposed as a new material for the passivation layers of amorphous indium gallium zinc oxide thin film transistors (a-IGZO TFTs). The a-IGZO TFTs with nitrocellulose passivation layers (NC-PVLs) demonstrate improved electrical characteristics and stability. The a-IGZO TFTs with NC-PVLs exhibit improvements in field-effect mobility (μ FE ) from 11.72 ± 1.14 to 20.68 ± 1.94 cm 2 /(V s), threshold voltage (V th ) from 1.85 ± 1.19 to 0.56 ± 0.35 V, and on/off current ratio (I on/off ) from (5.31 ± 2.19) × 10 7 to (4.79 ± 1.54) × 10 8 compared to a-IGZO TFTs without PVLs, respectively. The V th shifts of a-IGZO TFTs without PVLs, with poly(methyl methacrylate) (PMMA) PVLs, and with NC-PVLs under positive bias stress (PBS) test for 10,000 s represented 5.08, 3.94, and 2.35 V, respectively. These improvements were induced by nitrogen diffusion from NC-PVLs to a-IGZO TFTs. The lone-pair electrons of diffused nitrogen attract weakly bonded oxygen serving as defect sites in a-IGZO TFTs. Consequently, the electrical characteristics are improved by an increase of carrier concentration in a-IGZO TFTs, and a decrease of defects in the back channel layer. Also, NC-PVLs have an excellent property as a barrier against ambient gases. Therefore, the NC-PVL is a promising passivation layer for next-generation display devices that simultaneously can improve electrical characteristics and stability against ambient gases.

  9. Effects of argon flow rate on electrical properties of amorphous indium gallium zinc oxide thin-film transistors

    Energy Technology Data Exchange (ETDEWEB)

    Sahoo, A.K.; Wu, G.M., E-mail: wu@mail.cgu.edu.tw

    2016-04-30

    In this report, amorphous indium gallium zinc oxide (a-IGZO) thin films were deposited on glass substrates using different argon flow rates (AFRs). The impact on the electrical properties of the a-IGZO thin-film transistors with various AFRs during film growth has been carefully investigated. The AFR varied 20–60 sccm while the oxygen flow rate was maintained at 1 sccm. All a-IGZO films achieved transmittance higher than 80% in the wavelength range of 350–1000 nm, and it increased slightly with increasing AFR in the higher wavelength region. The rise in partial pressure due to increased AFR could affect the performance, in particular by increasing the current on/off ratio, and changes in electron mobility, sub-threshold swing voltage and threshold voltage. The optimal results were attained at AFR of 50 sccm. The field effect mobility, sub-threshold swing, ratio of on-current to the off-current, interfacial trap density and threshold voltage are 27.7 cm{sup 2}/V·s, 0.11 V/dec, 2.9 × 10{sup 8}, 1.1 × 10{sup 12} cm{sup −2} eV{sup −1} and 0.84 V, respectively. In addition, good electrical properties were achieved using dielectric SiO{sub 2} prepared by simple, low-cost electron beam evaporator system. - Highlights: • IGZO thin films RF-sputtered on glass substrates under various Ar to oxygen flow rates • The electrical performances and thin film quality of a-IGZO TFT were characterized. • High mobility 27.7 cm{sup 2}/V·s and very small sub-threshold voltage 0.11 V/decade obtained. • Simple and low cost electron-beam deposited SiO{sub 2} used as gate dielectric. • Ohmic behavior of source–drain with channel material has been achieved.

  10. Comparison of the electrical and optical properties of direct current and radio frequency sputtered amorphous indium gallium zinc oxide films

    International Nuclear Information System (INIS)

    Yao, Jianke; Gong, Li; Xie, Lei; Zhang, Shengdong

    2013-01-01

    The electrical and optical properties of direct current and radio frequency (RF) sputtered amorphous indium gallium zinc oxide (a-IGZO) films are compared. It is found that the RF sputtered a-IGZO films have better stoichiometry (In:Ga:Zn:O = 1:1:1:2.5–3.0), lower electrical conductivity (σ < 8 S/cm), higher refractive index (n = 1.9–2.0) and larger band gap (E g = 3.02–3.29 eV), and show less shift of Fermi level (△ E F ∼ 0.26 eV) and increased concentration of electrons (△ N e ∼ 10 4 ) in the conduction band with the reduction concentration of oxygen vacancy (V O ). Although a-IGZO has intensively been studied for a semiconductor channel material of thin film transistors in next-generation flat panel displays, its fundamental material parameters have not been thoroughly reported. In this work, the work function (φ) of a-IGZO films is tested with the ultraviolet photoelectron spectroscopy. It is found that the φ of a-IGZO films is in the range of 4.0–5.0 eV depending on the V O . - Highlights: ► Amorphous InGaZnO 4 (a-IGZO) films were prepared with different sputtering modes. ► Electrical and optical properties of the different films were compared. ► Fermi level (△E F ) shift in a-IGZO films were tested by X-ray photoelectron spectroscopy. ► The relation of △E F with the properties of a-IGZO films were discussed. ► Work function was tested by ultraviolet photoelectron spectroscopy

  11. Effects of argon flow rate on electrical properties of amorphous indium gallium zinc oxide thin-film transistors

    International Nuclear Information System (INIS)

    Sahoo, A.K.; Wu, G.M.

    2016-01-01

    In this report, amorphous indium gallium zinc oxide (a-IGZO) thin films were deposited on glass substrates using different argon flow rates (AFRs). The impact on the electrical properties of the a-IGZO thin-film transistors with various AFRs during film growth has been carefully investigated. The AFR varied 20–60 sccm while the oxygen flow rate was maintained at 1 sccm. All a-IGZO films achieved transmittance higher than 80% in the wavelength range of 350–1000 nm, and it increased slightly with increasing AFR in the higher wavelength region. The rise in partial pressure due to increased AFR could affect the performance, in particular by increasing the current on/off ratio, and changes in electron mobility, sub-threshold swing voltage and threshold voltage. The optimal results were attained at AFR of 50 sccm. The field effect mobility, sub-threshold swing, ratio of on-current to the off-current, interfacial trap density and threshold voltage are 27.7 cm"2/V·s, 0.11 V/dec, 2.9 × 10"8, 1.1 × 10"1"2 cm"−"2 eV"−"1 and 0.84 V, respectively. In addition, good electrical properties were achieved using dielectric SiO_2 prepared by simple, low-cost electron beam evaporator system. - Highlights: • IGZO thin films RF-sputtered on glass substrates under various Ar to oxygen flow rates • The electrical performances and thin film quality of a-IGZO TFT were characterized. • High mobility 27.7 cm"2/V·s and very small sub-threshold voltage 0.11 V/decade obtained. • Simple and low cost electron-beam deposited SiO_2 used as gate dielectric. • Ohmic behavior of source–drain with channel material has been achieved.

  12. Electric plants to gas, influence of both Mineral Matter and Air Oxidation in coal pyrolysis

    International Nuclear Information System (INIS)

    Mondragon, F.; Jaramillo, A.; Quintero, G.

    1995-01-01

    In this work some coal samples from different Colombia's deposits are analyzed. In first stage, material matter is removed from coal by acid treatment with HF/HCl, and aerial oxidation of coal is made with air in oven to 150 Centigrade degree temperature. In second stage, pyrolysis is carried out in two different techniques: 1. Thermogravimetric Analysis (TGA) and 2. Programmed Temperature Pyrolysis (PTP) in a pyrolyzer equipped with a quadrupole mass spectrometer. In both techniques, the coal samples are heated in different rates to 650 Centigrade degree. During PTP trials the evolution of CH4, H2S, hydrocarbons (m/z=42), CO2, benzene and toluene are monitored. Studied coal samples showed: 1). A gas conversion range between 48.8% to 21.8%; 2). A decrease in the gas conversion between 2% to 4%, when oxidation it is applied; 3). The temperature at the one which is presented the maximum evolution of CH4 is similar for all coal samples; 4). The maximum evolution of H2S depends on mineral matter composition, occurs between 480 to 550 Centigrade degrees and is presented due to pyrite decomposition. 5). The evolution of CO2 occurs between 100 to 650 Centigrade degree, its production is generated in different stage of the mentioned temperature range, and in some coal samples is presented due to inorganic origin

  13. Formation and electrical characteristics of silicon dioxide layers by use of nitric acid oxidation method

    International Nuclear Information System (INIS)

    Imal, S.; Takahashi, M.; Matsuba, K.; Asuha; Ishikawa, Y.; Kobayashi, Hikaru

    2005-01-01

    SiO 2 /Si structure can be formed at low temperatures by use of nitric acid (HNO 3 ) oxidation of Si (NAOS) method. When Si wafers are immersed in ∼ 40 wt% HNO 3 solutions at 108 deg C, ∼ 1 nm SiO 2 layers are formed. The subsequent immersion in 68 wt% HNO 3 (i.e., azeotropic mixture of HNO 3 with water) at 121 deg C increases the SiO 2 thickness. The 3,5 nm-thick SiO 2 layers produced by this two-step NAOS method possess a considerably low leakage current density (e.g. 1 x 10 2 A/cmi 2 at the forward gate bias, V G , of 1.5 V), in spite of the low temperature oxidation, and further decreased (e.g., 8 x 10 4 A/cm 2 at V G = 1.5 V) by post-metallization annealing at 250 deg C in hydrogen atmosphere. In order to increase the SiO 2 thickness, a bias voltage is applied during the NAOS method. When 10 V is applied to Si with respect to a Pt counter electrode both immersed in 1 M HNO 3 solutions at 25 deg C, SiO 2 layers with 8 nm thickness can be formed for 1 h(Authors)

  14. Effects of thermal oxidation duration on the structural and electrical properties of Nd{sub 2}O{sub 3}/Si system

    Energy Technology Data Exchange (ETDEWEB)

    Hetherin, Karuppiah; Ramesh, S.; Wong, Yew Hoong [University of Malaya, Department of Mechanical Engineering, Faculty of Engineering, Kuala Lumpur (Malaysia)

    2017-08-15

    A study on the growth, structure and electrical properties of Nd{sub 2}O{sub 3} was carried out experimentally on RF sputtered thin film on Si followed by thermal oxidation at 700 C at different oxidation durations (5, 10, 15 and 20 min). The structural and chemical properties were studied by X-ray diffraction analysis, Fourier transform infrared analysis, Raman analysis and high resolution transmission electron microscopy analysis. The formation of cubic-Nd{sub 2}O{sub 3}, orthorhombic-Nd{sub 2}Si{sub 2}O{sub 7}, monoclinic-SiO{sub 2}, tetragonal-SiO{sub 2} and hexagonal-SiO{sub 2} was detected. A single interfacial layer was detected for the sample oxidized at 15 min and double interfacial layers were detected for the samples oxidized at 5, 10 and 20 min. The sample oxidized at 15 min possessed the best electrical properties which were attributed by the highest Nd{sub 2}O{sub 3} intensity, largest SiO{sub 2} crystallite structure, thinnest interfacial and oxide layer, highest barrier height, lowest effective oxide charges, slow trap density and average interface trap density. (orig.)

  15. Electric field and temperature scaling of polarization reversal in silicon doped hafnium oxide ferroelectric thin films

    International Nuclear Information System (INIS)

    Zhou, Dayu; Guan, Yan; Vopson, Melvin M.; Xu, Jin; Liang, Hailong; Cao, Fei; Dong, Xianlin; Mueller, Johannes; Schenk, Tony; Schroeder, Uwe

    2015-01-01

    HfO 2 -based binary lead-free ferroelectrics show promising properties for non-volatile memory applications, providing that their polarization reversal behavior is fully understood. In this work, temperature-dependent polarization hysteresis measured over a wide applied field range has been investigated for Si-doped HfO 2 ferroelectric thin films. Our study indicates that in the low and medium electric field regimes (E < twofold coercive field, 2E c ), the reversal process is dominated by the thermal activation on domain wall motion and domain nucleation; while in the high-field regime (E > 2E c ), a non-equilibrium nucleation-limited-switching mechanism dominates the reversal process. The optimum field for ferroelectric random access memory (FeRAM) applications was determined to be around 2.0 MV/cm, which translates into a 2.0 V potential applied across the 10 nm thick films

  16. High pressure-temperature electrical conductivity of magnesiowustite as a function of iron oxide concentration

    Science.gov (United States)

    Li, Xiaoyuan; Jeanloz, Raymond

    1990-01-01

    The electrical conductivity of (Mg, Fe)O magnesiowustite containing 9 and 27.5 mol pct FeO has been measured at simultaneously high pressures (30-32 GPa) and temperatures using a diamond anvil cell heated with a continuous wave Nd:YAG laser and an external resistance heater. The conductivity depends strongly on the FeO concentration at both ambient and high pressures. At the pressures and temperatures of about 30 GPa and 2000 K, conditions expected in the lower mantle, the magnesiowustite containing 27.5 percent FeO is 3 orders of magnitude more conductive than that containing 9 percent FeO. The activation energy of magnesiowustite decreases with increasing iron concentration from 0.38 (+ or - 0.09) eV at 9 percent FeO to 0.29 (+ or - 0.05) eV at 27.5 percent FeO.

  17. Fully-Coupled Thermo-Electrical Modeling and Simulation of Transition Metal Oxide Memristors

    Energy Technology Data Exchange (ETDEWEB)

    Mamaluy, Denis [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Gao, Xujiao [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Tierney, Brian David [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Marinella, Matthew [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Mickel, Patrick [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Tierney, Brian D. [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)

    2016-11-01

    Transition metal oxide (TMO) memristors have recently attracted special attention from the semiconductor industry and academia. Memristors are one of the strongest candidates to replace flash memory, and possibly DRAM and SRAM in the near future. Moreover, memristors have a high potential to enable beyond-CMOS technology advances in novel architectures for high performance computing (HPC). The utility of memristors has been demonstrated in reprogrammable logic (cross-bar switches), brain-inspired computing and in non-CMOS complementary logic. Indeed, the potential use of memristors as logic devices is especially important considering the inevitable end of CMOS technology scaling that is anticipated by 2025. In order to aid the on-going Sandia memristor fabrication effort with a memristor design tool and establish a clear physical picture of resistance switching in TMO memristors, we have created and validated with experimental data a simulation tool we name the Memristor Charge Transport (MCT) Simulator.

  18. Structural and Electrical Properties of Graphene Oxide-Doped PVA/PVP Blend Nanocomposite Polymer Films

    Directory of Open Access Journals (Sweden)

    S. K. Shahenoor Basha

    2018-01-01

    Full Text Available Graphene oxide (GO nanoparticles were incorporated in PVA/PVP blend polymers for the preparation of nanocomposite polymer films by the solution cast technique. XRD, FTIR, DSC, SEM, and UV-visible studies were performed on the prepared nanocomposite polymer films. XRD revealed the amorphous nature of the prepared films. Thermal analysis of the nanocomposite polymer films was analyzed by DSC. SEM revealed the morphological features and the degree of roughness of the samples. DC conductivity studies were under taken on the samples, and the conductivity was found to be 6.13 × 10−4 S·cm−1 for the polymer film prepared at room temperature. A solid-state battery has been fabricated with the chemical composition of Mg+/(PVA/PVP  :  GO/(I2 + C + electrolyte, and its cell parameters like power density and current density were calculated.

  19. Control of the electrical conductivity of composites of antimony doped tin oxide (ATO) nanoparticles and acrylate by grafting of 3-methacryloxpropyltrimethoxysilane (MPS)

    NARCIS (Netherlands)

    Posthumus, W.; Laven, J.; With, de G.; Linde, van der R.

    2006-01-01

    The effect of the addition of antimony doped tin oxide (ATO) nanoparticles on the electrical conductivity of acrylate films is described. To enable dispersing of ATO in acrylate matrices, 3-methacryloxypropyltrimethoxysilane (MPS) was grafted on the surface of the filler. The amount of MPS used for

  20. Defect Chemistry and Electrical Conductivity of Sm-Doped La1-xSrxCoO3-δ for Solid Oxide Fuel Cells

    DEFF Research Database (Denmark)

    Björketun, Mårten; Castelli, Ivano Eligio; Rossmeisl, Jan

    2017-01-01

    We have calculated the electrical conductivity of the solid oxide fuel cell (SOFC) cathode contact material La1-xSrxCoO3-δ at 900 K. Experimental trends in conductivity against x, and against δ for fixed x, are correctly reproduced for x ≲ 0.8. Furthermore, we have studied the chemistry of neutral...

  1. Electrical analysis of high dielectric constant insulator and metal gate metal oxide semiconductor capacitors on flexible bulk mono-crystalline silicon

    KAUST Repository

    Ghoneim, Mohamed T.; Rojas, Jhonathan Prieto; Young, Chadwin D.; Bersuker, Gennadi; Hussain, Muhammad Mustafa

    2015-01-01

    We report on the electrical study of high dielectric constant insulator and metal gate metal oxide semiconductor capacitors (MOSCAPs) on a flexible ultra-thin (25 μm) silicon fabric which is peeled off using a CMOS compatible process from a standard

  2. Electrical and optical properties of ultrasonically sprayed Al-doped zinc oxide thin films

    Energy Technology Data Exchange (ETDEWEB)

    Babu, B.J., E-mail: jbabu@cinvestav.mx [Department of Electrical Engineering-SEES, CINVESTAV-IPN, Zacatenco, D.F., C.P. 07360 (Mexico); Maldonado, A.; Velumani, S.; Asomoza, R. [Department of Electrical Engineering-SEES, CINVESTAV-IPN, Zacatenco, D.F., C.P. 07360 (Mexico)

    2010-10-25

    Aluminium-doped ZnO (AZO) films were deposited by ultrasonic spray pyrolysis (USP) technique to investigate its potential application as antireflection coating and top contact layer for copper indium gallium diselenide (CIGS) based photovoltaic cells. The solution used to prepare AZO thin films contained 0.2 M of zinc acetate and 0.2 M of aluminium pentanedionate solutions in the order of 2, 3 and 4 at.% of Al/Zn. AZO films were deposited onto glass substrates at different substrate temperatures starting from 450 deg. C to 500 deg. C. XRD and FESEM analysis revealed the structural properties of the films and almost all the films possessed crystalline structure with a preferred (0 0 2) orientation except for the 4 at.% of Al. Grain size of AZO films varied from 29.7 to 37 nm for different substrate temperatures and atomic percentage of aluminium. The average optical transmittance of all films with the variation of doping concentration and substrate temperature was 75-90% in the visible range of wavelength 600-700 nm. Optical direct band gap value of 2, 3 and 4 at.% Al-doped films sprayed at different temperatures varied from 3.32 to 3.46 eV. Hall studies were carried out to analyze resistivity, mobility and carrier concentration of the films. AZO films deposited at different substrate temperatures and at various Al/Zn ratios showed resistivity ranging from 0.12 to 1.0 x 10{sup -2} {Omega} cm. Mobility value was {approx}5 cm{sup 2}/V s and carrier concentration value was {approx}7.7 x 10{sup 19} cm{sup -3}. Minimum electrical resistivity was obtained for the 3 at.% Al-doped film sprayed at 475 deg. C and its value was 1.0 x 10{sup -2} {Omega} cm with film thickness of 602 nm. The electrical conductivity of ZnO films was improved by aluminium doping.

  3. Inhibition of xanthine oxidase reduces oxidative stress and improves skeletal muscle function in response to electrically stimulated isometric contractions in aged mice

    Science.gov (United States)

    Ryan, Michael J.; Jackson, Janna R.; Hao, Yanlei; Leonard, Stephen S.; Alway, Stephen E.

    2012-01-01

    Oxidative stress is a putative factor responsible for reducing function and increasing apoptotic signaling in skeletal muscle with aging. This study examined the contribution and functional significance of the xanthine oxidase enzyme as a potential source of oxidant production in aged skeletal muscle during repetitive in situ electrically stimulated isometric contractions. Xanthine oxidase activity was inhibited in young adult and aged mice via a subcutaneously placed time release (2.5 mg/day) allopurinol pellet, 7 days prior to the start of in situ electrically stimulated isometric contractions. Gastrocnemius muscles were electrically activated with 20 maximal contractions for three consecutive days. Xanthine oxidase activity was 65% greater in the gastrocnemius muscle of aged mice compared to young mice. Xanthine oxidase activity also increased after in situ electrically stimulated isometric contractions in muscles from both young (33%) and aged (28%) mice, relative to contralateral non-contracted muscles. Allopurinol attenuated the exercise-induced increase in oxidative stress, but it did not affect the elevated basal levels of oxidative stress that was associated with aging. In addition, inhibition of xanthine oxidase activity decreased caspase 3 activity, but it had no effect on other markers of mitochondrial associated apoptosis. Our results show that compared to control conditions, suppression of xanthine oxidase activity by allopurinol reduced xanthine oxidase activity, H2O2 levels, lipid peroxidation and caspase-3 activity, prevented the in situ electrically stimulated isometric contraction-induced loss of glutathione, prevented the increase of catalase and copper-zinc superoxide dismutase activities, and increased maximal isometric force in the plantar flexor muscles of aged mice after repetitive electrically evoked contractions. PMID:21530649

  4. Emulating the electrical activity of the neuron using a silicon oxide RRAM cell

    Directory of Open Access Journals (Sweden)

    Adnan eMehonic

    2016-02-01

    Full Text Available In recent years, formidable effort has been devoted to exploring the potential of Resistive RAM (RRAM devices to model key features of biological synapses. This is done to strengthen the link between neuro-computing architectures and neuroscience, bearing in mind the extremely low power consumption and immense parallelism of biological systems. Here we demonstrate the feasibility of using the RRAM cell to go further and to model aspects of the electrical activity of the neuron. We focus on the specific operational procedures required for the generation of controlled voltage transients, which resemble spike-like responses. Further, we demonstrate that RRAM devices are capable of integrating input current pulses over time to produce thresholded voltage transients. We show that the frequency of the output transients can be controlled by the input signal, and we relate recent models of the redox-based nanoionic resistive memory cell to two common neuronal models, the Hodgkin-Huxley (HH conductance model and the leaky integrate-and-fire model. We employ a simplified circuit model to phenomenologically describe voltage transient generation.

  5. Electrical properties of Ba doped LSGM for electrolyte material of solid oxide fuel cells

    Science.gov (United States)

    Raghvendra, Singh, Prabhakar; Singh, Rajesh Kumar

    2013-02-01

    We report our investigations on Lanthanum Strontium Magnesium Gallate, LSGM, La0.8Sr0.2Ga0.8Mg0.2O3-δ doped with Barium at Strontium site having composition La0.8(Sr0.1Ba0.1)Ga0.8Mg0.2O3-δ (LSBGM). The pure cubic phase along with some additional phase was confirmed by XRD pattern. Electrical properties of the Composition LSBGM [La0.8(Sr0.1Ba0.1)Ga0.8Mg0.2O3-δ] prepared by solid state route, was studied employing impedance spectroscopy in the temperature range 573 K-993 K and frequency range 20 Hz-1MHz. The total ionic conductivity of the composition was found to be 0.072 S.cm-1 at 953 K and the activation energy from Arrhenius plot was found to be 1.16 eV in the measured temperature range. This confirms oxygen ion conductivity in the system. SEM micrograph shows the uniform densed particle morphology with gains of average size 200 nm.

  6. Emulating the Electrical Activity of the Neuron Using a Silicon Oxide RRAM Cell

    Science.gov (United States)

    Mehonic, Adnan; Kenyon, Anthony J.

    2016-01-01

    In recent years, formidable effort has been devoted to exploring the potential of Resistive RAM (RRAM) devices to model key features of biological synapses. This is done to strengthen the link between neuro-computing architectures and neuroscience, bearing in mind the extremely low power consumption and immense parallelism of biological systems. Here we demonstrate the feasibility of using the RRAM cell to go further and to model aspects of the electrical activity of the neuron. We focus on the specific operational procedures required for the generation of controlled voltage transients, which resemble spike-like responses. Further, we demonstrate that RRAM devices are capable of integrating input current pulses over time to produce thresholded voltage transients. We show that the frequency of the output transients can be controlled by the input signal, and we relate recent models of the redox-based nanoionic resistive memory cell to two common neuronal models, the Hodgkin-Huxley (HH) conductance model and the leaky integrate-and-fire model. We employ a simplified circuit model to phenomenologically describe voltage transient generation. PMID:26941598

  7. Characterization of platinum catalysts supported on substoichiometric oxides of Zr, Ti and Ce by the electric impedance spectroscopy

    International Nuclear Information System (INIS)

    Eder, D.

    2003-09-01

    energy of 120 kJ/mol, their number being ten times larger than for titania. Additionally, the influence of the water vapour pressure is stronger than in TiO 2 (power -2/3). With the electric impedance spectroscopy it is possible to decouple single processes of an electrochemical system with different time scales by measuring the impedance over a large frequency range (1 'micro' Hz < f < 1 MHz). The measurements were carried out in different gas atmospheres using the 2-pole method with gold electrodes. Therefore, it was possible to study the electric behavior of the oxides in oxidizing and reducing atmospheres and under dry and wet conditions. (author)

  8. All-optical loadable and erasable memory cell design based on inversionless lasing and electromagnetically induced transparency effects

    International Nuclear Information System (INIS)

    Gholipour Verki, N; HajiBadali, A; Abbasian, K; Rostami, A

    2011-01-01

    A loadable and erasable all-optical memory cell is designed by using two coupled micro-ring resonators with electromagnetically induced transparency (EIT) and lasing without inversion (LWI). To read out stored data, an additional phase is introduced in the upper ring resonator due to EIT. To compensate the fibre loss, use is made of LWI. The EIT is induced by inserting Λ-type three level quantum dots in the right-hand half of the upper ring and LWI is implemented by inserted Y-type four level quantum dots in the left-hand half of both rings. This optical memory cell can operate at a low light power level corresponding to several photons.

  9. Disruption of Memory Reconsolidation Erases a Fear Memory Trace in the Human Amygdala: An 18-Month Follow-Up.

    Directory of Open Access Journals (Sweden)

    Johannes Björkstrand

    Full Text Available Fear memories can be attenuated by reactivation followed by disrupted reconsolidation. Using functional magnetic resonance imaging we recently showed that reactivation and reconsolidation of a conditioned fear memory trace in the basolateral amygdala predicts subsequent fear expression over two days, while reactivation followed by disrupted reconsolidation abolishes the memory trace and suppresses fear. In this follow-up study we demonstrate that the behavioral effect persists over 18 months reflected in superior reacquisition after undisrupted, as compared to disrupted reconsolidation, and that neural activity in the basolateral amygdala representing the initial fear memory predicts return of fear. We conclude that disrupting reconsolidation have long lasting behavioral effects and may permanently erase the fear component of an amygdala-dependent memory.

  10. Enhancement and character recognition of the erased colophon of a 15th-century Hebrew prayer book

    Science.gov (United States)

    Walvoord, Derek J.; Easton, Roger L., Jr.; Knox, Keith T.; Heimbueger, Matthew

    2005-01-01

    A handwritten codex often included an inscription that listed facts about its publication, such as the names of the scribe and patron, date of publication, the city where the book was copied, etc. These facts obviously provide essential information to a historian studying the provenance of the codex. Unfortunately, this page was sometimes erased after the sale of the book to a new owner, often by scraping off the original ink. The importance of recovering this information would be difficult to overstate. This paper reports on the methods of imaging, image enhancement, and character recognition that were applied to this page in a Hebrew prayer book copied in Florence in the 15th century.

  11. Enhanced electrical properties of oxide semiconductor thin-film transistors with high conductivity thin layer insertion for the channel region

    Energy Technology Data Exchange (ETDEWEB)

    Nguyen, Cam Phu Thi; Raja, Jayapal; Kim, Sunbo; Jang, Kyungsoo; Le, Anh Huy Tuan; Lee, Youn-Jung; Yi, Junsin, E-mail: junsin@skku.edu

    2017-02-28

    Highlights: • The characteristics of thin film transistors using double active layers are examined. • Electrical characteristics have been improved for the double active layers devices. • The total trap density can be decreased by insert-ion of ultrathin ITO film. - Abstract: This study examined the performance and the stability of indium tin zinc oxide (ITZO) thin film transistors (TFTs) by inserting an ultra-thin indium tin oxide (ITO) layer at the active/insulator interface. The electrical properties of the double channel device (ITO thickness of 5 nm) were improved in comparison with the single channel ITZO or ITO devices. The TFT characteristics of the device with an ITO thickness of less than 5 nm were degraded due to the formation of an island-like morphology and the carriers scattering at the active/insulator interface. The 5 nm-thick ITO inserted ITZO TFTs (optimal condition) exhibited a superior field effect mobility (∼95 cm{sup 2}/V·s) compared with the ITZO-only TFTs (∼34 cm{sup 2}/V·s). The best characteristics of the TFT devices with double channel layer are due to the lowest surface roughness (0.14 nm) and contact angle (50.1°) that result in the highest hydrophicility, and the most effective adhesion at the surface. Furthermore, the threshold voltage shifts for the ITO/ITZO double layer device decreased to 0.80 and −2.39 V compared with 6.10 and −6.79 V (for the ITZO only device) under positive and negative bias stress, respectively. The falling rates of E{sub A} were 0.38 eV/V and 0.54 eV/V for the ITZO and ITO/ITZO bi-layer devices, respectively. The faster falling rate of the double channel devices suggests that the trap density, including interface trap and semiconductor bulk trap, can be decreased by the ion insertion of a very thin ITO film into the ITZO/SiO{sub 2} reference device. These results demonstrate that the double active layer TFT can potentially be applied to the flat panel display.

  12. Oxidative polycondensation of benzimidazole using NaOCl: Synthesis, characterization, optical, thermal and electrical properties of polybenzimidazoles

    Science.gov (United States)

    Anand, Siddeswaran; Muthusamy, Athianna; Dineshkumar, Sengottuvelu; Chandrasekaran, J.

    2017-11-01

    A series of polybenzimidazole polymers, poly-2-(1H-benzo[d] imidazole-2-yl) phenol (PBIP2), poly-3-(1H-benzo[d] imidazole-2-yl) phenol (PBIP3) and poly-4-(1H-benzo[d] imidazole-2-yl) phenol (PBIP4) were synthesized by oxidative polycondensation of benzimidazole monomers 2-(1H-benzo [d] imidazole-2-yl) phenol (BIP2), 3-(1H-benzo [d] imidazole-2-yl) phenol (BIP3) and 4-(1H-benzo [d] imidazole-2-yl) phenol (BIP4). The structure of benzimidazoles monomers and polybenzimidazoles (PBI) were confirmed by various spectroscopic techniques. The quantum theoretical calculations of band gap energy values of monomers were done with DFT and are compared with its optical band gap energy values. Fluorescence spectra of these compounds showed maximum emission in blue region. The electrical conductivity of PBIs was measured by four-point probe technique and showed good electrical response on iodine doping and conductivity increases with increase iodine doping time. The differences in conductivities among the three PBIs are in accordance with the charge density on imidazole nitrogens calculated by Huckel method. The high carbines residue (∼40%) at 500 °C in thermo gravimetric analysis shows that the PBIs are having reasonably good thermal stability. Polymers have recorded high dielectric constant at low applied frequency of 50 Hz at 393 K. The I-V characteristics of polybenzimidazoles p-n diodes showed rectifying nature with a typical forward to reverse current in the range -4 to 4 V. The high n values are caused by non homogeneities and effect of series resistance.

  13. Composite structure of ZnO films coated with reduced graphene oxide: structural, electrical and electrochemical properties

    Science.gov (United States)

    Shuai, Weiqiang; Hu, Yuehui; Chen, Yichuan; Hu, Keyan; Zhang, Xiaohua; Zhu, Wenjun; Tong, Fan; Lao, Zixuan

    2018-02-01

    ZnO films coated with reduced graphene oxide (RGO-ZnO) were prepared by a simple chemical approach. The graphene oxide (GO) films transferred onto ZnO films by spin coating were reduced to RGO films by two steps (exposed to hydrazine vapor for 12 h and annealed at 600 °C). The crystal structures, electrical and photoluminescence properties of RGO-ZnO films on quartz substrates were systematically studied. The SEM images illustrated that RGO layers have successfully been coated on the ZnO films very tightly. The PL properties of RGO-ZnO were studied. PL spectra show two sharp peaks at 390 nm and a broad visible emission around 490 nm. The resistivity of RGO-ZnO films was measured by a Hall measurement system, RGO as nanofiller considerably decrease the resistivity of ZnO films. An electrode was fabricated, using RGO-ZnO films deposited on Si substrate as active materials, for super capacitor application. By comparison of different results, we conclude that the RGO-ZnO composite material couples possess the properties of super capacitor. Project supported by the National Natural Science Foundation of China (Nos. 61464005, 51562015), the Natural Science Foundation of Jiangxi Province (Nos. 20143ACB21004, 20151BAB212008, 20171BAB216015), the Jiangxi Province Foreign Cooperation Projects, China (No. 20151BDH80031), the Leader Training Object Project of Major Disciplines Academic and Technical of Jiangxi Province (No. 20123BCB22002), and the Key Technology R & D Program of the Jiangxi Provine of Science and Technology (No. 20171BBE50053).

  14. Integrating high electrical conductivity and photocatalytic activity in cotton fabric by cationizing for enriched coating of negatively charged graphene oxide.

    Science.gov (United States)

    Sahito, Iftikhar Ali; Sun, Kyung Chul; Arbab, Alvira Ayoub; Qadir, Muhammad Bilal; Jeong, Sung Hoon

    2015-10-05

    Electroconductive textiles have attended tremendous focus recently and researchers are making efforts to increase conductivity of e-textiles, in order to increase the use of such flexible and low cost textile materials. In this study, surface conductivity and photo catalytic activity of standard cotton fabric (SCF) was enhanced by modifying its surface charge, from negative to positive, using Bovine Serum Albumin (BSA) as a cationic agent, to convert it into cationised cotton fabric (CCF). Then, both types of fabrics were dip coated with a simple dip and dry technique for the adsorption of negatively charged graphene oxide (GO) sheets onto its surface. This resulted in 67.74% higher loading amount of GO on the CCF making self-assembly. Finally, this coating was chemically converted by vapor reduction using hydrazine hydrate to reduced graphene oxide (rGO) for restoration of a high electrical conductivity at the fabric surface. Our results revealed that with such high loading of GO, the surface resistance of CCF was only 40Ω/sq as compared to 510Ω/sq of the SCF and a 66% higher photo catalytic activity was also achieved through cationization for improved GO coating. Graphene coated SCF and CCF were characterized using FE-SEM, FTIR, Raman, UV-vis, WAXD, EDX and XPS spectroscopy to ascertain successful reduction of GO to rGO. The effect of BSA treatment on adsorption of cotton fabric was studied using drop shape analyzer to measure contact angle and for thermal and mechanical resistance, the fabric was tested for TGA and tensile strength, respectively. rGO coated fabric also showed slightly improved thermal stability yet a minor loss of strength was observed. The high flexibility, photocatalytic activity and excellent conductivity of this fabric suggests that it can be used as an electrode material for various applications. Copyright © 2015 Elsevier Ltd. All rights reserved.

  15. Bleeding Efficiency, Microbiological Quality and Oxidative Stability of Meat from Goats Subjected to Slaughter without Stunning in Comparison with Different Methods of Pre-Slaughter Electrical Stunning.

    Science.gov (United States)

    Sabow, Azad Behnan; Zulkifli, Idrus; Goh, Yong Meng; Ab Kadir, Mohd Zainal Abidin; Kaka, Ubedullah; Imlan, Jurhamid Columbres; Abubakar, Ahmed Abubakar; Adeyemi, Kazeem Dauda; Sazili, Awis Qurni

    2016-01-01

    The influence of pre-slaughter electrical stunning techniques and slaughter without stunning on bleeding efficiency and shelf life of chevon during a 14 d postmortem aging were assessed. Thirty two Boer crossbred bucks were randomly assigned to four slaughtering techniques viz slaughter without stunning (SWS), low frequency head-only electrical stunning (LFHO; 1 A for 3 s at a frequency of 50 Hz), low frequency head-to-back electrical stunning (LFHB; 1 A for 3 s at a frequency of 50 Hz) and high frequency head-to-back electrical stunning (HFHB; 1 A for 3 s at a frequency of 850 Hz). The SWS, LFHO and HFHB goats had higher (pmeat had higher (pmeat compared to those from SWS, LFHO and HFHB after 3 d postmortem. Results indicate that the low bleed-out in LFHB lowered the lipid oxidative stability and microbiological quality of chevon during aging.

  16. Reducing primary and secondary traumatic stress symptoms among educators by training them to deliver a resiliency program (ERASE-Stress) following the Christchurch earthquake in New Zealand.

    Science.gov (United States)

    Berger, Rony; Abu-Raiya, Hisham; Benatov, Joy

    2016-03-01

    The current investigation evaluated the impact of a universal school-based resiliency intervention (ERASE-Stress) on educators who were working with elementary schoolchildren exposed to the Canterbury earthquake in New Zealand. In the context of major disasters, educators may suffer from "dual trauma"; they can experience symptoms of both primary trauma (as a result of the disaster itself) and secondary trauma (as a result of working with traumatized students). Sixty-three educators were randomly assigned to either the ERASE-Stress intervention or an alternative Managing Emergencies and Traumatic Incidents (METI) program which served as a control group. Efficacy of the program was evaluated at the end of the training as well as at 8 months follow-up. Compared with educators in the control group, those in the ERASE-Stress intervention significantly reduced their posttraumatic distress and secondary traumatization symptoms, improved their perceived level of professional self-efficacy as a helper of earthquake survivors, developed an optimistic outlook regarding their personal future and enhanced their sense of hope, and honed some of their positive coping strategies and reduced the utilization of some maladaptive coping methods. These beneficial consequences of the ERASE-Stress training make it a potentially useful tool for educators working with traumatized students in the context of major disasters. (PsycINFO Database Record (c) 2016 APA, all rights reserved).

  17. Role of chemical functional groups on thermal and electrical properties of various graphene oxide derivatives: a comparative x-ray photoelectron spectroscopy analysis

    Science.gov (United States)

    Balaji Mohan, Velram; Jakisch, Lothar; Jayaraman, Krishnan; Bhattacharyya, Debes

    2018-03-01

    In recent years, graphene and its derivatives have become prominent subject matter due to their fascinating combination of properties and potential applications in a number application. While several fundamental studies have been progressed, there is a particular need to understand how different graphene derivatives are influenced in terms of their electrical and thermal conductivities by different functional groups they end up with through their manufacturing and functionalisation methods. This article addresses of the role of different functional groups present of different of reduced graphene oxides (rGO) concerning their electrical and thermal properties, and the results were compared with elemental analyses of functionalised reduced graphene oxide (frGO) and graphene. The results showed that electrical and thermal conductivities of the rGO samples, highly dependent on the presence of residual functional groups from oxidation, reduction and functionalisation processes. The increase in reduction of oxygen, hydroxyl, carboxylic, epoxide moieties and heterocyclic compounds increase the specific surface area of the samples through which the mean electron path has increased. This improved both electrical and thermal conductivities together in all the samples which were highly dependent on the efficiency of different reductant used in this study.

  18. Effects of tunnel oxide process on SONOS flash memory characteristics

    International Nuclear Information System (INIS)

    Li, Dong Hua; Park, Il Han; Yun, Jang-Gn; Park, Byung-Gook

    2010-01-01

    In this paper, various process conditions of tunnel oxides are applied in SONOS flash memory to investigate their effects on charge transport during the program/erase operations. We focus the key point of analysis on Fermi-level (E F ) variation at the interface of silicon substrate and tunnel oxide. The Si-O chemical bonding information which describes the interface oxidation states at the Si/SiO 2 is obtained by the core-level X-ray photoelectron spectroscopy (XPS). Moreover, relative E F position is determined by measuring the Si 2p energy shift from XPS spectrums. Experimental results from memory characteristic measurement show that MTO tunnel oxide structure exhibits faster erase speed, and larger memory window during P/E cycle compared to FTO and RTO tunnel oxide structures. Finally, we examine long-term charge retention characteristic and find that the memory windows of all the capacitors remain wider than 2 V after 10 5 s.

  19. Effect of cerium doping on the electrical properties of ultrathin indium tin oxide films for application in touch sensors

    International Nuclear Information System (INIS)

    Kang, Saewon; Cho, Sanghyun; Song, Pungkeun

    2014-01-01

    The electrical and microstructure properties of cerium doped indium tin oxide (ITO:Ce) ultrathin films were evaluated to assess their potential application in touch sensors. 10 to 150-nm ITO and ITO:Ce films were deposited on glass substrates (200 °C) by DC magnetron sputtering using different ITO targets (doped with CeO 2 : 0, 1, 3, 5 wt.%). ITO:Ce (doped with CeO 2 : 3 wt.%) films with thickness < 25 nm showed lower resistivity than ITO. This lower resistivity was accompanied by a significant increase in the Hall mobility despite a decrease in crystallinity. In addition, the surface morphology and wetting properties improved with increasing Ce concentration. This is related to an earlier transition from an island structure to continuous film formation caused by an increase in the initial nucleation density. - Highlights: • 10 to 150-nm InSnO 2 (ITO) and ITO:Ce thin films were deposited by sputtering. • ITO:Ce films with thickness < 25 nm showed lower resistivity than ITO. • Hall mobility was strongly affected by initial film formation. • Surface morphology and wetting property improved with increasing Ce concentration. • Such behavior is related to an earlier transition to continuous film formation

  20. The optical and electrical properties of graphene oxide with water-soluble conjugated polymer composites by radiation.

    Science.gov (United States)

    Jungo, Seung Tae; Oh, Seung-Hwan; Kim, Hyun Bin; Jeun, Joon-Pyo; Lee, Bum-Jae; Kang, Phil-Hyun

    2013-11-01

    In order to overcome the difficulty of dispersion and low conductivity in composite containing graphene, graphene oxide (GO) has been used instead of neat graphene. And the GO treated by radiation, could give improved conductivity of the GO-containing polymer composite. In this study, fluorene based water-soluble conjugated polymer (WPF-6-oxy-F) was introduced in GO solution to investigate the change of optical and electrical properties through radiation process. UV-Vis absorption of irradiated WPF-6-oxy-F-GO composite was red shifted and I(D)/I(G) ratio of Raman spectra decreased. XPS analysis showed that C-N bonds was formed after the irradiation and confirmed the increased bonds between the GO and the water-soluble conjugated polymer matrix. From the AFM and XPS analysis, it was found that the water-soluble conjugated polymer matrix was stacked between the modified GO in the morphology of irradiated WPF-6-oxy-F-GO composite was increased after gamma ray irradiation up to 10(-2) S/cm.

  1. Effects of vacuum rapid thermal annealing on the electrical characteristics of amorphous indium gallium zinc oxide thin films

    Directory of Open Access Journals (Sweden)

    Hyun-Woo Lee

    2018-01-01

    Full Text Available We investigated the effects of vacuum rapid thermal annealing (RTA on the electrical characteristics of amorphous indium gallium zinc oxide (a-IGZO thin films. The a-IGZO films deposited by radiofrequency sputtering were subjected to vacuum annealing under various temperature and pressure conditions with the RTA system. The carrier concentration was evaluated by Hall measurement; the electron concentration of the a-IGZO film increased and the resistivity decreased as the RTA temperature increased under vacuum conditions. In a-IGZO thin-film transistors (TFTs with a bottom-gate top-contact structure, the threshold voltage decreased and the leakage current increased as the vacuum RTA temperature increased. As the annealing pressure decreased, the threshold voltage decreased, and the leakage current increased. X-ray photoelectron spectroscopy indicated changes in the lattice oxygen and oxygen vacancies of the a-IGZO films after vacuum RTA. At higher annealing temperatures, the lattice oxygen decreased and oxygen vacancies increased, which suggests that oxygen was diffused out in a reduced pressure atmosphere. The formation of oxygen vacancies increased the electron concentration, which consequently increased the conductivity of the a-IGZO films and reduced the threshold voltage of the TFTs. The results showed that the oxygen vacancies and electron concentrations of the a-IGZO thin films changed with the vacuum RTA conditions and that high-temperature RTA treatment at low pressure converted the IGZO thin film to a conductor.

  2. Effects of vacuum rapid thermal annealing on the electrical characteristics of amorphous indium gallium zinc oxide thin films

    Science.gov (United States)

    Lee, Hyun-Woo; Cho, Won-Ju

    2018-01-01

    We investigated the effects of vacuum rapid thermal annealing (RTA) on the electrical characteristics of amorphous indium gallium zinc oxide (a-IGZO) thin films. The a-IGZO films deposited by radiofrequency sputtering were subjected to vacuum annealing under various temperature and pressure conditions with the RTA system. The carrier concentration was evaluated by Hall measurement; the electron concentration of the a-IGZO film increased and the resistivity decreased as the RTA temperature increased under vacuum conditions. In a-IGZO thin-film transistors (TFTs) with a bottom-gate top-contact structure, the threshold voltage decreased and the leakage current increased as the vacuum RTA temperature increased. As the annealing pressure decreased, the threshold voltage decreased, and the leakage current increased. X-ray photoelectron spectroscopy indicated changes in the lattice oxygen and oxygen vacancies of the a-IGZO films after vacuum RTA. At higher annealing temperatures, the lattice oxygen decreased and oxygen vacancies increased, which suggests that oxygen was diffused out in a reduced pressure atmosphere. The formation of oxygen vacancies increased the electron concentration, which consequently increased the conductivity of the a-IGZO films and reduced the threshold voltage of the TFTs. The results showed that the oxygen vacancies and electron concentrations of the a-IGZO thin films changed with the vacuum RTA conditions and that high-temperature RTA treatment at low pressure converted the IGZO thin film to a conductor.

  3. SEMICONDUCTOR DEVICES: Structural and electrical characteristics of lanthanum oxide gate dielectric film on GaAs pHEMT technology

    Science.gov (United States)

    Chia-Song, Wu; Hsing-Chung, Liu

    2009-11-01

    This paper investigates the feasibility of using a lanthanum oxide thin film (La2O3) with a high dielectric constant as a gate dielectric on GaAs pHEMTs to reduce gate leakage current and improve the gate to drain breakdown voltage relative to the conventional GaAs pHEMT. An E/D mode pHEMT in a single chip was realized by selecting the appropriate La2O3 thickness. The thin La2O3 film was characterized: its chemical composition and crystalline structure were determined by X-ray photoelectron spectroscopy and X-ray diffraction, respectively. La2O3 exhibited good thermal stability after post-deposition annealing at 200, 400 and 600 °C because of its high binding-energy (835.6 eV). Experimental results clearly demonstrated that the La2O3 thin film was thermally stable. The DC and RF characteristics of Pt/La2O3/Ti/Au gate and conventional Pt/Ti/Au gate pHEMTs were examined. The measurements indicated that the transistor with the Pt/La2O3/Ti/Au gate had a higher breakdown voltage and lower gate leakage current. Accordingly, the La2O3 thin film is a potential high-k material for use as a gate dielectric to improve electrical performance and the thermal effect in high-power applications.

  4. Metal-insulator transition in tin doped indium oxide (ITO thin films: Quantum correction to the electrical conductivity

    Directory of Open Access Journals (Sweden)

    Deepak Kumar Kaushik

    2017-01-01

    Full Text Available Tin doped indium oxide (ITO thin films are being used extensively as transparent conductors in several applications. In the present communication, we report the electrical transport in DC magnetron sputtered ITO thin films (prepared at 300 K and subsequently annealed at 673 K in vacuum for 60 minutes in low temperatures (25-300 K. The low temperature Hall effect and resistivity measurements reveal that the ITO thin films are moderately dis-ordered (kFl∼1; kF is the Fermi wave vector and l is the electron mean free path and degenerate semiconductors. The transport of charge carriers (electrons in these disordered ITO thin films takes place via the de-localized states. The disorder effects lead to the well-known ‘metal-insulator transition’ (MIT which is observed at 110 K in these ITO thin films. The MIT in ITO thin films is explained by the quantum correction to the conductivity (QCC; this approach is based on the inclusion of quantum-mechanical interference effects in Boltzmann’s expression of the conductivity of the disordered systems. The insulating behaviour observed in ITO thin films below the MIT temperature is attributed to the combined effect of the weak localization and the electron-electron interactions.

  5. Metal-insulator transition in tin doped indium oxide (ITO) thin films: Quantum correction to the electrical conductivity

    Science.gov (United States)

    Kaushik, Deepak Kumar; Kumar, K. Uday; Subrahmanyam, A.

    2017-01-01

    Tin doped indium oxide (ITO) thin films are being used extensively as transparent conductors in several applications. In the present communication, we report the electrical transport in DC magnetron sputtered ITO thin films (prepared at 300 K and subsequently annealed at 673 K in vacuum for 60 minutes) in low temperatures (25-300 K). The low temperature Hall effect and resistivity measurements reveal that the ITO thin films are moderately dis-ordered (kFl˜1; kF is the Fermi wave vector and l is the electron mean free path) and degenerate semiconductors. The transport of charge carriers (electrons) in these disordered ITO thin films takes place via the de-localized states. The disorder effects lead to the well-known `metal-insulator transition' (MIT) which is observed at 110 K in these ITO thin films. The MIT in ITO thin films is explained by the quantum correction to the conductivity (QCC); this approach is based on the inclusion of quantum-mechanical interference effects in Boltzmann's expression of the conductivity of the disordered systems. The insulating behaviour observed in ITO thin films below the MIT temperature is attributed to the combined effect of the weak localization and the electron-electron interactions.

  6. Effects of vacuum annealing on the optical and electrical properties of p-type copper-oxide thin-film transistors

    International Nuclear Information System (INIS)

    Sohn, Joonsung; Song, Sang-Hun; Kwon, Hyuck-In; Nam, Dong-Woo; Cho, In-Tak; Lee, Jong-Ho; Cho, Eou-Sik

    2013-01-01

    We have investigated the effects of vacuum annealing on the optical and electrical properties of the p-type copper-oxide thin-film transistors (TFTs). The vacuum annealing of the copper-oxide thin-film was performed using the RF magnetron sputter at various temperatures. From the x-ray diffraction and UV-vis spectroscopy, it is demonstrated that the high-temperature vacuum annealing reduces the copper-oxide phase from CuO to Cu 2 O, and increases the optical transmittance in the visible part of the spectrum. The fabricated copper-oxide TFT does not exhibit the switching behavior under low-temperature vacuum annealing conditions. However, as the annealing temperature increases, the drain current begins to be modulated by a gate voltage, and the TFT exhibits a high current on–off ratio over 10 4 as the vacuum annealing temperature increases over 450 °C. These results show that the vacuum annealing process can be an effective method of simultaneously improving the optical and electrical performances in p-type copper-oxide TFTs. (paper)

  7. Pyrochlore type semiconducting ceramic oxides in Ca-Ce-Ti-M-O system (M = Nb or Ta)-Structure, microstructure and electrical properties

    Energy Technology Data Exchange (ETDEWEB)

    Deepa, M. [Materials and Minerals Division, National Institute for Interdisciplinary Science and Technology (NIIST), Trivandrum 695019 (India); Prabhakar Rao, P., E-mail: padala_rao@yahoo.com [Materials and Minerals Division, National Institute for Interdisciplinary Science and Technology (NIIST), Trivandrum 695019 (India); Radhakrishnan, A.N.; Sibi, K.S.; Koshy, Peter [Materials and Minerals Division, National Institute for Interdisciplinary Science and Technology (NIIST), Trivandrum 695019 (India)

    2009-07-01

    A new series of pyrochlore type ceramic semiconducting oxides in Ca-Ce-Ti-M-O (M = Nb or Ta) system has been synthesized by the conventional ceramic route. The electrical conductivity measurements show that these oxides exhibit semiconducting behavior and the conductivity increases with the Ce content in the compound. Activation energy of the current carriers is in the range of 0.5-1.6 eV. The electrical conductivity in these oxides is due to the presence of Ce{sup 3+}, which remains in the reduced state without being oxidized to Ce{sup 4+} by structural stabilization. The photoluminescence and X-ray photoelectron spectroscopy analysis corroborate the presence of Ce in the 3+ state. Impedance spectral analysis is carried out to evaluate the transport properties and indicates that the conduction in these compounds is mainly due to electronic contribution. The X-ray powder diffraction and Raman spectroscopy analysis establishes that these oxides belong to a cubic pyrochlore type structure.

  8. Physical and electrical characterizations of AlGaN/GaN MOS gate stacks with AlGaN surface oxidation treatment

    Science.gov (United States)

    Yamada, Takahiro; Watanabe, Kenta; Nozaki, Mikito; Shih, Hong-An; Nakazawa, Satoshi; Anda, Yoshiharu; Ueda, Tetsuzo; Yoshigoe, Akitaka; Hosoi, Takuji; Shimura, Takayoshi; Watanabe, Heiji

    2018-06-01

    The impacts of inserting ultrathin oxides into insulator/AlGaN interfaces on their electrical properties were investigated to develop advanced AlGaN/GaN metal–oxide–semiconductor (MOS) gate stacks. For this purpose, the initial thermal oxidation of AlGaN surfaces in oxygen ambient was systematically studied by synchrotron radiation X-ray photoelectron spectroscopy (SR-XPS) and atomic force microscopy (AFM). Our physical characterizations revealed that, when compared with GaN surfaces, aluminum addition promotes the initial oxidation of AlGaN surfaces at temperatures of around 400 °C, followed by smaller grain growth above 850 °C. Electrical measurements of AlGaN/GaN MOS capacitors also showed that, although excessive oxidation treatment of AlGaN surfaces over around 700 °C has an adverse effect, interface passivation with the initial oxidation of the AlGaN surfaces at temperatures ranging from 400 to 500 °C was proven to be beneficial for fabricating high-quality AlGaN/GaN MOS gate stacks.

  9. Role of KATP channels in cephalic vasodilatation induced by calcitonin gene-related peptide, nitric oxide, and transcranial electrical stimulation in the rat

    DEFF Research Database (Denmark)

    Gozalov, Aydin; Jansen-Olesen, Inger; Klærke, Dan Arne

    2008-01-01

    OBJECTIVE: The objective of this study was to explore the role of K(ATP) channels in vasodilatation induced by calcitonin gene-related peptide (CGRP), nitric oxide (NO), and transcranial electrical stimulation (TES) in intracranial arteries of rat. BACKGROUND: Dilatation of cerebral and dural...... CGRP, NO, and endogenous CGRP after electrical stimulation. Also diameter changes of pial arteries, mean arterial blood pressure and local cerebral blood flow by Laser Doppler flowmetry (LCBF(Flux)) were measured. RESULTS: CGRP, NO, and TES caused dilatation of the 2 arteries in vivo and in vitro...

  10. Influence of sputtering deposition parameters on electrical and optical properties of aluminium-doped zinc oxide thin films for photovoltaic applications

    Directory of Open Access Journals (Sweden)

    Krawczak Ewelina

    2017-01-01

    Full Text Available Transparent Conductive Oxides (TCOs characterized by high visible transmittance and low electrical resistivity play an important role in photovoltaic technology. Aluminum doped zinc oxide (AZO is one of the TCOs that can find its application in thin film solar cells (CIGS or CdTe PV technology as well as in other microelectronic applications. In this paper some optical and electrical properties of ZnO:Al thin films deposited by RF magnetron sputtering method have been investigated. AZO layers have been deposited on the soda lime glass substrates with use of variable technological parameters such as pressure in the deposition chamber, power applied and temperature during the process. The composition of AZO films has been investigated by EDS method. Thickness and refraction index of the deposited layers in dependence on certain technological parameters of sputtering process have been determined by spectroscopic ellipsometry. The measurements of transmittance and sheet resistance were also performed.

  11. Influence of sputtering deposition parameters on electrical and optical properties of aluminium-doped zinc oxide thin films for photovoltaic applications

    Science.gov (United States)

    Krawczak, Ewelina; Agata, Zdyb; Gulkowski, Slawomir; Fave, Alain; Fourmond, Erwann

    2017-11-01

    Transparent Conductive Oxides (TCOs) characterized by high visible transmittance and low electrical resistivity play an important role in photovoltaic technology. Aluminum doped zinc oxide (AZO) is one of the TCOs that can find its application in thin film solar cells (CIGS or CdTe PV technology) as well as in other microelectronic applications. In this paper some optical and electrical properties of ZnO:Al thin films deposited by RF magnetron sputtering method have been investigated. AZO layers have been deposited on the soda lime glass substrates with use of variable technological parameters such as pressure in the deposition chamber, power applied and temperature during the process. The composition of AZO films has been investigated by EDS method. Thickness and refraction index of the deposited layers in dependence on certain technological parameters of sputtering process have been determined by spectroscopic ellipsometry. The measurements of transmittance and sheet resistance were also performed.

  12. Oxygen-ion-migration-modulated bipolar resistive switching and complementary resistive switching in tungsten/indium tin oxide/gold memory device

    Science.gov (United States)

    Wu, Xinghui; Zhang, Qiuhui; Cui, Nana; Xu, Weiwei; Wang, Kefu; Jiang, Wei; Xu, Qixing

    2018-06-01

    In this paper, we report our investigation of room-temperature-fabricated tungsten/indium tin oxide/gold (W/ITO/Au) resistive random access memory (RRAM), which exhibits asymmetric bipolar resistive switching (BRS) behavior. The device displays good write/erase endurance and data retention properties. The device shows complementary resistive switching (CRS) characteristics after controlling the compliance current. A WO x layer electrically formed at the W/ITO in the forming process. Mobile oxygen ions within ITO migrate toward the electrode/ITO interface and produce a semiconductor-like layer that acts as a free-carrier barrier. The CRS characteristic here can be elucidated in light of the evolution of an asymmetric free-carrier blocking layer at the electrode/ITO interface.

  13. Magnetron sputtered Hf-B-Si-C-N films with controlled electrical conductivity and optical transparency, and with ultrahigh oxidation resistance

    Czech Academy of Sciences Publication Activity Database

    Šímová, V.; Vlček, J.; Zuzjaková, Š.; Houška, J.; Shen, Y.; Jiang, J. C.; Meletis, E. I.; Peřina, Vratislav

    2018-01-01

    Roč. 653, č. 5 (2018), s. 333-340 ISSN 0040-6090 R&D Projects: GA MŠk LM2015056 Institutional support: RVO:61389005 Keywords : Hf-B-Si-C-N films * pulsed reactive magnetron sputtering * electrical conductivitiy * optical transparency * high-temperature oxidation resistance Subject RIV: BG - Nuclear, Atomic and Molecular Physics, Colliders OBOR OECD: Nuclear physics Impact factor: 1.879, year: 2016

  14. Modeling and experimental performance of an intermediate temperature reversible solid oxide cell for high-efficiency, distributed-scale electrical energy storage

    Science.gov (United States)

    Wendel, Christopher H.; Gao, Zhan; Barnett, Scott A.; Braun, Robert J.

    2015-06-01

    Electrical energy storage is expected to be a critical component of the future world energy system, performing load-leveling operations to enable increased penetration of renewable and distributed generation. Reversible solid oxide cells, operating sequentially between power-producing fuel cell mode and fuel-producing electrolysis mode, have the capability to provide highly efficient, scalable electricity storage. However, challenges ranging from cell performance and durability to system integration must be addressed before widespread adoption. One central challenge of the system design is establishing effective thermal management in the two distinct operating modes. This work leverages an operating strategy to use carbonaceous reactant species and operate at intermediate stack temperature (650 °C) to promote exothermic fuel-synthesis reactions that thermally self-sustain the electrolysis process. We present performance of a doped lanthanum-gallate (LSGM) electrolyte solid oxide cell that shows high efficiency in both operating modes at 650 °C. A physically based electrochemical model is calibrated to represent the cell performance and used to simulate roundtrip operation for conditions unique to these reversible systems. Design decisions related to system operation are evaluated using the cell model including current density, fuel and oxidant reactant compositions, and flow configuration. The analysis reveals tradeoffs between electrical efficiency, thermal management, energy density, and durability.

  15. Analysis of chemical bond states and electrical properties of stacked AlON/HfO{sub 2} gate oxides formed by using a layer-by-layer technique

    Energy Technology Data Exchange (ETDEWEB)

    Choi, Wonjoon; Lee, Jonghyun; Yang, Jungyup; Kim, Chaeok; Hong, Jinpyo; Nahm, Tschanguh; Byun, Byungsub; Kim, Moseok [Hanyang University, Seoul (Korea, Republic of)

    2006-06-15

    Stacked AlON/HfO{sub 2} thin films for gate oxides in metal-oxide-semiconductor devices are successfully prepared on Si substrates by utilizing a layer-by-layer technique integrated with an off-axis RF remote plasma sputtering process at room temperature. This off-axis structure is designed to improve the uniformity and the quality of gate oxide films. Also, a layer-by-layer technique is used to control the interface layer between the gate oxide and the Si substrate. The electrical properties of our stacked films are characterized by using capacitance versus voltage and leakage current versus voltage measurements. The stacked AlON/HfO{sub 2} gate oxide exhibits a low leakage current of about 10{sup -6} A/cm{sup 2} and a high dielectric constant value of 14.26 by effectively suppressing the interface layer between gate oxide and Si substrate. In addition, the chemical bond states and the optimum thickness of each AlON and HfO{sub 2} thin film are analyzed using X-ray photoemission spectroscopy and transmission electron microscopy measurement.

  16. Improvement of optical and electrical properties of indium tin oxide layer of GaN-based light-emitting diode by surface plasmon in silver nanoparticles

    International Nuclear Information System (INIS)

    Cho, Chu-Young; Hong, Sang-Hyun; Park, Seong-Ju

    2015-01-01

    We report on the effect of silver (Ag) nanoparticles on the optical transmittance and electrical conductivity of indium tin oxide (ITO) transparent conducting layer deposited on p-GaN layer of light-emitting diodes (LEDs). The sheet resistance of ITO and the series resistance of LEDs were decreased due to the increased electrical conductivity of ITO by Ag nanoparticles, compared with those of the LEDs with a bare ITO only. The ITO transmittance was also improved by localized surface plasmon resonance between the incident light and the randomly distributed Ag nanoparticles on ITO. The optical output power of LEDs with Ag nanoparticles on ITO was increased by 16% at 20 mA of injection current. - Highlights: • We studied the effect of Ag nanoparticles deposited on ITO on the properties of LED. • The optical power of LED and transmittance of ITO were improved by Ag surface plasmon. • The electrical conductivity of ITO was increased by Ag nanoparticles

  17. Controlling the electrical properties of ZnO films by forming zinc and oxide bridges by a plasma and electron-assisted process

    Directory of Open Access Journals (Sweden)

    Norihiro Shimoi

    2012-06-01

    Full Text Available A new method to produce electrically steady ZnO films without any heating process has been developed by using plasma and electron beams to facilitate bonding between the metallic component and the oxygen on coated ZnO films. Both plasma atmosphere and electron beams can function as sources of nonequilibrium bonding energy, forming bridges between the zinc present in the zinc complex and the oxygen in the ZnO particles to construct a zinc-oxide thin film. Our results confirm that it is possible to achieve low conductive characteristics by controlling the acceleration voltage of electrons used to irradiate the ZnO coating. The electrically steady films fabricated have various potential applications, being particularly well-suited to electrical devices on a plastic medium.

  18. Controlling the electrical properties of ZnO films by forming zinc and oxide bridges by a plasma and electron-assisted process

    Energy Technology Data Exchange (ETDEWEB)

    Shimoi, Norihiro; Tanaka, Yasumitsu [Graduate School of Environmental Studies, Tohoku University, 6-6-20 Aoba, Aramaki, Aoba-ku, Sendai 980-8579 (Japan); Harada, Takamitsu [Sendai Technology Center, Consumer-Professional and Devices Group, Sony Corporation, 3-4-1 Sakuragi, Tagajo 985-0842 (Japan); Tanaka, Shun-ichiro [Institute of Multidisciplinary Research for Advanced Materials, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577 (Japan)

    2012-06-15

    A new method to produce electrically steady ZnO films without any heating process has been developed by using plasma and electron beams to facilitate bonding between the metallic component and the oxygen on coated ZnO films. Both plasma atmosphere and electron beams can function as sources of nonequilibrium bonding energy, forming bridges between the zinc present in the zinc complex and the oxygen in the ZnO particles to construct a zinc-oxide thin film. Our results confirm that it is possible to achieve low conductive characteristics by controlling the acceleration voltage of electrons used to irradiate the ZnO coating. The electrically steady films fabricated have various potential applications, being particularly well-suited to electrical devices on a plastic medium.

  19. Electric charging/discharging characteristics of super capacitor, using de-alloying and anodic oxidized Ti-Ni-Si amorphous alloy ribbons.

    Science.gov (United States)

    Fukuhara, Mikio; Sugawara, Kazuyuki

    2014-01-01

    Charging/discharging behaviors of de-alloyed and anodic oxidized Ti-Ni-Si amorphous alloy ribbons were measured as a function of current between 10 pA and 100 mA, using galvanostatic charge/discharging method. In sharp contrast to conventional electric double layer capacitor (EDLC), discharging behaviors for voltage under constant currents of 1, 10 and 100 mA after 1.8 ks charging at 100 mA show parabolic decrease, demonstrating direct electric storage without solvents. The supercapacitors, devices that store electric charge on their amorphous TiO2-x surfaces that contain many 70-nm sized cavities, show the Ragone plot which locates at lower energy density region near the 2nd cells, and RC constant of 800 s (at 1 mHz), which is 157,000 times larger than that (5 ms) in EDLC.

  20. Electric-field-control of magnetic anisotropy of Co0.6Fe0.2B0.2/oxide stacks using reduced voltage

    Science.gov (United States)

    Kita, Koji; Abraham, David W.; Gajek, Martin J.; Worledge, D. C.

    2012-08-01

    We have demonstrated purely electrical manipulation of the magnetic anisotropy of a Co0.6Fe0.2B0.2 film by applying only 8 V across the CoFeB/oxide stack. A clear transition from in-plane to perpendicular anisotropy was observed. The quantitative relationship between interface anisotropy energy and the applied electric-field was determined from the linear voltage dependence of the saturation field. By comparing the dielectric stacks of MgO/Al2O3 and MgO/HfO2/Al2O3, enhanced voltage control was also demonstrated, due to the higher dielectric constant of the HfO2. These results suggest the feasibility of purely electrical control of magnetization with small voltage bias for spintronics applications.

  1. Bleeding Efficiency, Microbiological Quality and Oxidative Stability of Meat from Goats Subjected to Slaughter without Stunning in Comparison with Different Methods of Pre-Slaughter Electrical Stunning

    Science.gov (United States)

    Sabow, Azad Behnan; Zulkifli, Idrus; Goh, Yong Meng; Ab Kadir, Mohd Zainal Abidin; Kaka, Ubedullah; Imlan, Jurhamid Columbres; Abubakar, Ahmed Abubakar; Adeyemi, Kazeem Dauda; Sazili, Awis Qurni

    2016-01-01

    The influence of pre-slaughter electrical stunning techniques and slaughter without stunning on bleeding efficiency and shelf life of chevon during a 14 d postmortem aging were assessed. Thirty two Boer crossbred bucks were randomly assigned to four slaughtering techniques viz slaughter without stunning (SWS), low frequency head-only electrical stunning (LFHO; 1 A for 3 s at a frequency of 50 Hz), low frequency head-to-back electrical stunning (LFHB; 1 A for 3 s at a frequency of 50 Hz) and high frequency head-to-back electrical stunning (HFHB; 1 A for 3 s at a frequency of 850 Hz). The SWS, LFHO and HFHB goats had higher (p<0.05) blood loss and lower residual hemoglobin in muscle compared to LFHB. The LFHB meat had higher (p<0.05) TBARS value than other treatments on d 7 and 14 d postmortem. Slaughtering methods had no effect on protein oxidation. Higher bacterial counts were observed in LFHB meat compared to those from SWS, LFHO and HFHB after 3 d postmortem. Results indicate that the low bleed-out in LFHB lowered the lipid oxidative stability and microbiological quality of chevon during aging. PMID:27035716

  2. Electrical instability of InGaZnO thin-film transistors with and without titanium sub-oxide layer under light illumination

    Science.gov (United States)

    Chiu, Y. C.; Zheng, Z. W.; Cheng, C. H.; Chen, P. C.; Yen, S. S.; Fan, C. C.; Hsu, H. H.; Kao, H. L.; Chang, C. Y.

    2017-03-01

    The electrical instability behaviors of amorphous indium-gallium-zinc oxide thin-film transistors with and without titanium sub-oxide passivation layer were investigated under light illumination in this study. For the unpassivated IGZO TFT device, in contrast with the dark case, a noticeable increase of the sub-threshold swing was observed when under the illumination environment, which can be attributed to the generation of ionized oxygen vacancies within the α-IGZO active layer by high energy photons. For the passivated TFT device, the much smaller SS of 70 mV/dec and high device mobility of >100 cm2/Vs at a drive voltage of 3 V with negligible degradation under light illumination are achieved due to the passivation effect of n-type titanium sub-oxide semiconductor, which may create potential application for high-performance display.

  3. Fossil-based comparative analyses reveal ancient marine ancestry erased by extinction in ray-finned fishes.

    Science.gov (United States)

    Betancur-R, Ricardo; Ortí, Guillermo; Pyron, Robert Alexander

    2015-05-01

    The marine-freshwater boundary is a major biodiversity gradient and few groups have colonised both systems successfully. Fishes have transitioned between habitats repeatedly, diversifying in rivers, lakes and oceans over evolutionary time. However, their history of habitat colonisation and diversification is unclear based on available fossil and phylogenetic data. We estimate ancestral habitats and diversification and transition rates using a large-scale phylogeny of extant fish taxa and one containing a massive number of extinct species. Extant-only phylogenetic analyses indicate freshwater ancestry, but inclusion of fossils reveal strong evidence of marine ancestry in lineages now restricted to freshwaters. Diversification and colonisation dynamics vary asymmetrically between habitats, as marine lineages colonise and flourish in rivers more frequently than the reverse. Our study highlights the importance of including fossils in comparative analyses, showing that freshwaters have played a role as refuges for ancient fish lineages, a signal erased by extinction in extant-only phylogenies. © 2015 John Wiley & Sons Ltd/CNRS.

  4. Erasing the Epigenetic Memory and Beginning to Switch—The Onset of Antigenic Switching of var Genes in Plasmodium falciparum

    Science.gov (United States)

    Fastman, Yair; Noble, Robert; Recker, Mario; Dzikowski, Ron

    2012-01-01

    Antigenic variation in Plasmodium falciparum is regulated by transcriptional switches among members of the var gene family, each expressed in a mutually exclusive manner and encoding a different variant of the surface antigens collectively named PfEMP1. Antigenic switching starts when the first merozoites egress from the liver and begin their asexual proliferation within red blood cells. By erasing the epigenetic memory we created parasites with no var background, similar to merozoites that egress from the liver where no var gene is expressed. Creating a null-var background enabled us to investigate the onset of antigenic switches at the early phase of infection. At the onset of switching, var transcription pattern is heterogeneous with numerous genes transcribed at low levels including upsA vars, a subtype that was implicated in severe malaria, which are rarely activated in growing cultures. Analysis of subsequent in vitro switches shows that the probability of a gene to turn on or off is not associated with its chromosomal position or promoter type per se but on intrinsic properties of each gene. We concluded that var switching is determined by gene specific associated switch rates rather than general promoter type or locus associated switch rates. In addition, we show that fine tuned reduction in var transcription increases their switch rate, indicating that transcriptional perturbation can alter antigenic switching. PMID:22461905

  5. Effects of X irradiation and high field electron injection of the electrical properties of rapid thermal oxides

    International Nuclear Information System (INIS)

    Schubert, W.K.; Seager, C.H.

    1988-01-01

    Rapid thermal oxidation (RTO) is a promising tool for fabricating the thin gate oxides (5 to 15 nm) that will be needed in future submicron integrated circuits, because of its inherently superior time-temperature control when compared to conventional oxidation methods. It is important to demonstrate that RTO can be used without adversely affecting the radiation hardness or high field properties of the oxide. Beyond this demonstration, rapid thermal processing makes it possible to determine more precisely how the kinetics of oxidation and post oxidation annealing affect the device properties. Information of this type should prove useful in modeling relevant defect formation mechanisms. The present paper is part of a systematic study of the effect of rapid thermal processing on the radiation and high field response of thin oxides

  6. Apollo guidance, navigation and control: Guidance system operations plans for manned LM earth orbital and lunar missions using Program COLOSSUS 3. Section 7: Erasable memory programs

    Science.gov (United States)

    Hamilton, M. H.

    1972-01-01

    Erasable-memory programs (EMPs) designed for the guidance computers used in the command (CMC) and lunar modules (LGC) are described. CMC programs are designated COLOSSUS 3, and the associated EMPs are identified by a three-digit number beginning with 5. LGC programs are designated LUMINARY 1E, and the associated EMPs are identified, with one exception, by a three-digit number beginning with 1. The exception is EMP 99. The EMPs vary in complexity from a simple flagbit setting to a long and intricate logical structure. They all, however, cause the computer to behave in a way not intended in the original design of the programs; they accomplish this off-nominal behavior by some alteration of erasable memory to interface with existing fixed-memory programs to effect a desired result.

  7. Enhancement of the electrical characteristics of MOS capacitors by reducing the organic content of H2O-diluted Spin-On-Glass based oxides

    International Nuclear Information System (INIS)

    Molina, Joel; Munoz, Ana; Torres, Alfonso; Landa, Mauro; Alarcon, Pablo; Escobar, Manuel

    2011-01-01

    In this work, the physical, chemical and electrical properties of Metal-Oxide-Semiconductor (MOS) capacitors with Spin-On-Glass (SOG)-based thin films as gate dielectric have been investigated. Experiments of SOG diluted with two different solvents (2-propanol and deionized water) were done in order to reduce the viscosity of the SOG solution so that thinner films (down to ∼20 nm) could be obtained and their general characteristics compared. Thin films of SOG were deposited on silicon by the sol-gel technique and they were thermally annealed using conventional oxidation furnace and Rapid Thermal Processing (RTP) systems within N 2 ambient after deposition. SOG dilution using non-organic solvents like deionized water and further annealing (at relatively high temperatures ≥450 deg. C) are important processes intended to reduce the organic content of the films. Fourier-Transform Infrared (FTIR) Spectroscopy results have shown that water-diluted SOG films have a significant reduction in their organic content after increasing annealing temperature and/or dilution percentage when compared to those of undiluted SOG films. Both current-voltage (I-V) and capacitance-voltage (C-V) measurements show better electrical characteristics for SOG-films diluted in deionized water compared to those diluted in 2-propanol (which is an organic solvent). The electrical characteristics of H 2 O-diluted SOG thin films are very similar to those obtained from high quality thermal oxides so that their application as gate dielectrics in MOS devices is promising. Finally, it has been demonstrated that by reducing the organic content of SOG-based thin films, it is possible to obtain MOS devices with better electrical properties.

  8. Relationship between electrical properties and crystallization of indium oxide thin films using ex-situ grazing-incidence wide-angle x-ray scattering

    Science.gov (United States)

    González, G. B.; Okasinski, J. S.; Buchholz, D. B.; Boesso, J.; Almer, J. D.; Zeng, L.; Bedzyk, M. J.; Chang, R. P. H.

    2017-05-01

    Grazing-incidence, wide-angle x-ray scattering measurements were conducted on indium oxide thin films grown on silica substrates via pulsed laser deposition. Growth temperatures (TG) in this study ranged from -50 °C to 600 °C, in order to investigate the thermal effects on the film structure and its spatial homogeneity, as well as their relationship to electrical properties. Films grown below room temperature were amorphous, while films prepared at TG = 25 °C and above crystallized in the cubic bixbyite structure, and their crystalline fraction increased with deposition temperature. The electrical conductivity (σ) and electrical mobility (μ) were strongly enhanced at low deposition temperatures. For TG = 25 °C and 50 °C, a strong ⟨100⟩ preferred orientation (texture) occurred, but it decreased as the deposition temperature, and consequential crystallinity, increased. Higher variations in texture coefficients and in lattice parameters were measured at the film surface compared to the interior of the film, indicating strong microstructural gradients. At low crystallinity, the in-plane lattice spacing expanded, while the out-of-plane spacing contracted, and those values merged at TG = 400 °C, where high μ was measured. This directional difference in lattice spacing, or deviatoric strain, was linear as a function of both deposition temperature and the degree of crystallinity. The crystalline sample with TG = 100 °C had the lowest mobility, as well as film diffraction peaks which split into doublets. The deviatoric strains from these doublet peaks differ by a factor of four, supporting the presence of both a microstructure and strain gradient in this film. More isotropic films exhibit larger μ values, indicating that the microstructure directly correlates with electrical properties. These results provide valuable insights that can help to improve the desirable properties of indium oxide, as well as other transparent conducting oxides.

  9. Properties and electric characterizations of tetraethyl orthosilicate-based plasma enhanced chemical vapor deposition oxide film deposited at 400 °C for through silicon via application

    International Nuclear Information System (INIS)

    Su, Meiying; Yu, Daquan; Liu, Yijun; Wan, Lixi; Song, Chongshen; Dai, Fengwei; Xue, Kai; Jing, Xiangmeng; Guidotti, Daniel

    2014-01-01

    The dielectric via liner of through silicon vias was deposited at 400 °C using a tetraethyl orthosilicate (TEOS)-based plasma enhanced chemical vapor deposition process in a via-middle integration scheme. The morphology, conformality and chemical compositions of the liner film were characterized using field emission scanning electron microscopy and Fourier Transform Infrared spectroscopy. The thermal properties and electrical performance of blanket TEOS films were investigated by high temperature film stress and mercury probe Capacitance–Voltage measurements. The TEOS SiO 2 films show good conformality, excellent densification, low thermal stress, high breakdown voltage and low current leakage. - Highlights: • Tetraethyl orthosilicate-based oxide films were deposited for packaging application. • The oxide films deposited plasma-enhanced chemical vapor deposition (PECVD) at 400 °C. • The PECVD oxide films exhibit good step coverage. • The 400 °C PECVD oxide films exhibit low thermal stress and current leakage. • The 400 °C PECVD oxide films show high breakdown voltage and acceptable permittivity

  10. Properties and electric characterizations of tetraethyl orthosilicate-based plasma enhanced chemical vapor deposition oxide film deposited at 400 °C for through silicon via application

    Energy Technology Data Exchange (ETDEWEB)

    Su, Meiying, E-mail: sumeiying@ime.ac.cn [Institute of Microelectronics of Chinese Academy of Sciences, Beijing 100029 (China); National Center for Advanced Packaging, Wuxi 214135 (China); Yu, Daquan, E-mail: yudaquan@ime.ac.cn [Institute of Microelectronics of Chinese Academy of Sciences, Beijing 100029 (China); National Center for Advanced Packaging, Wuxi 214135 (China); Jiangsu R and D Center for Internet of Things, Wuxi 214135 (China); Liu, Yijun [Piotech Co. Ltd, Shenyang 110179 (China); Wan, Lixi [Institute of Microelectronics of Chinese Academy of Sciences, Beijing 100029 (China); Song, Chongshen; Dai, Fengwei [Institute of Microelectronics of Chinese Academy of Sciences, Beijing 100029 (China); National Center for Advanced Packaging, Wuxi 214135 (China); Xue, Kai [National Center for Advanced Packaging, Wuxi 214135 (China); Jing, Xiangmeng [Institute of Microelectronics of Chinese Academy of Sciences, Beijing 100029 (China); National Center for Advanced Packaging, Wuxi 214135 (China); Guidotti, Daniel [Institute of Microelectronics of Chinese Academy of Sciences, Beijing 100029 (China)

    2014-01-01

    The dielectric via liner of through silicon vias was deposited at 400 °C using a tetraethyl orthosilicate (TEOS)-based plasma enhanced chemical vapor deposition process in a via-middle integration scheme. The morphology, conformality and chemical compositions of the liner film were characterized using field emission scanning electron microscopy and Fourier Transform Infrared spectroscopy. The thermal properties and electrical performance of blanket TEOS films were investigated by high temperature film stress and mercury probe Capacitance–Voltage measurements. The TEOS SiO{sub 2} films show good conformality, excellent densification, low thermal stress, high breakdown voltage and low current leakage. - Highlights: • Tetraethyl orthosilicate-based oxide films were deposited for packaging application. • The oxide films deposited plasma-enhanced chemical vapor deposition (PECVD) at 400 °C. • The PECVD oxide films exhibit good step coverage. • The 400 °C PECVD oxide films exhibit low thermal stress and current leakage. • The 400 °C PECVD oxide films show high breakdown voltage and acceptable permittivity.

  11. A school-based, teacher-mediated prevention program (ERASE-Stress) for reducing terror-related traumatic reactions in Israeli youth: a quasi-randomized controlled trial.

    Science.gov (United States)

    Gelkopf, Marc; Berger, Rony

    2009-08-01

    Since September 2000 Israeli children have been exposed to a large number of terrorist attacks. A universal, school-based intervention for dealing with the threat of terrorism as well as with terror-related symptoms, ERASE-Stress (ES), was evaluated in a male religious middle school in southern Israel. The program was administered by the homeroom teachers as part of the school curriculum. It consists of 12 classroom sessions each lasting 90 minutes, and included psycho-educational material, skill training and resiliency strategies delivered to the students by homeroom teachers. One hundred and fourteen 7th and 8th grade students were randomly assigned to the ES intervention or were part of a waiting list (WL). They were assessed on measures of posttraumatic symptomatology, depression, somatic symptoms and functional problems before and 3 months after the intervention or the WL period. Three months after the program ended, students in the experimental group showed significant reduction in all measures compared to the waiting-list control group. The ERASE-Stress program may help students suffering from terror-related posttraumatic symptoms and mitigate the negative effects of future traumatic experiences. Furthermore, a school-based universal program such as the ERASE-Stress may potentially serve as an important and effective component of a community mental health policy for communities affected by terrorism.

  12. Combining plasma gasification and solid oxide cell technologies in advanced power plants for waste to energy and electric energy storage applications.

    Science.gov (United States)

    Perna, Alessandra; Minutillo, Mariagiovanna; Lubrano Lavadera, Antonio; Jannelli, Elio

    2018-03-01

    The waste to energy (WtE) facilities and the renewable energy storage systems have a strategic role in the promotion of the "eco-innovation", an emerging priority in the European Union. This paper aims to propose advanced plant configurations in which waste to energy plants and electric energy storage systems from intermittent renewable sources are combined for obtaining more efficient and clean energy solutions in accordance with the "eco-innovation" approach. The advanced plant configurations consist of an electric energy storage (EES) section based on a solid oxide electrolyzer (SOEC), a waste gasification section based on the plasma technology and a power generation section based on a solid oxide fuel cell (SOFC). The plant configurations differ for the utilization of electrolytic hydrogen and oxygen in the plasma gasification section and in the power generation section. In the first plant configuration IAPGFC (Integrated Air Plasma Gasification Fuel Cell), the renewable oxygen enriches the air stream, that is used as plasma gas in the gasification section, and the renewable hydrogen is used to enrich the anodic stream of the SOFC in the power generation section. In the second plant configuration IHPGFC (Integrated Hydrogen Plasma Gasification Fuel Cell) the renewable hydrogen is used as plasma gas in the plasma gasification section, and the renewable oxygen is used to enrich the cathodic stream of the SOFC in the power generation section. The analysis has been carried out by using numerical models for predicting and comparing the systems performances in terms of electric efficiency and capability in realizing the waste to energy and the electric energy storage of renewable sources. Results have highlighted that the electric efficiency is very high for all configurations (35-45%) and, thanks to the combination with the waste to energy technology, the storage efficiencies are very attractive (in the range 72-92%). Copyright © 2017 Elsevier Ltd. All rights

  13. An assessment of the impact of pulsed electric fields processing factors on oxidation, color, texture, and sensory attributes of turkey breast meat.

    Science.gov (United States)

    Arroyo, Cristina; Eslami, Sara; Brunton, Nigel P; Arimi, Joshua M; Noci, Francesco; Lyng, James G

    2015-05-01

    Pulsed electric fields (PEF) is a novel nonthermal technology that has the potential to cause physical disruption to muscle tissue which in turn could alter the sensorial aspects of meat in both a positive (e.g., enhanced tenderization) and a negative way (e.g., off-flavor development). If there is a risk of off-flavor development it should be identified prior to embarking on an extensive investigation on PEF in meat tenderization and turkey meat was chosen for this purpose as it is particularly prone to oxidation. The objective of this study was to investigate the effect of various PEF treatments on the quality attributes of turkey breast meat. Turkey breast meat obtained 1 d postslaughter was treated in a batch PEF chamber with increasing electric field strength up to 3 kV/cm and analyzed for lipid oxidation by thiobarbituric acid reactive substances assay (TBARS) with up to 5 d storage at 4°C in aerobic conditions. In a separate experiment, turkey breast meat samples were exposed to PEF under various combinations of pulse number, frequency, and voltage. Following PEF treatments weight loss, cook loss, lipid oxidation, texture, and color were assessed by instrumental methods. A sensory analysis was also performed to determine consumer acceptability for color, texture, and odor of the samples. Lipid oxidation in all PEF-treated samples progressed at the same rate with storage as the untreated samples and was not found to be significantly different to the control. Under the conditions examined PEF treatments did not induce differences in instrumentally measured weight loss, cook loss, lipid oxidation, texture, and color (raw and cooked) either on fresh or frozen samples. However, the sensory evaluation suggested that panelists could detect slight differences between the PEF-treated samples and the controls in terms of texture and odor. © 2015 Poultry Science Association Inc.

  14. Crystallization and electrical resistivity of Cu2O and CuO obtained by thermal oxidation of Cu thin films on SiO2/Si substrates

    International Nuclear Information System (INIS)

    De Los Santos Valladares, L.; Salinas, D. Hurtado; Dominguez, A. Bustamante; Najarro, D. Acosta; Khondaker, S.I.; Mitrelias, T.; Barnes, C.H.W.; Aguiar, J. Albino; Majima, Y.

    2012-01-01

    In this work, we study the crystallization and electrical resistivity of the formed oxides in a Cu/SiO 2 /Si thin film after thermal oxidation by ex-situ annealing at different temperatures up to 1000 °C. Upon increasing the annealing temperature, from the X ray diffractogram the phase evolution Cu → Cu + Cu 2 O → Cu 2 O → Cu 2 O + CuO → CuO was detected. Pure Cu 2 O films are obtained at 200 °C, whereas uniform CuO films without structural surface defects such as terraces, kinks, porosity or cracks are obtained in the temperature range 300–550 °C. In both oxides, crystallization improves with annealing temperature. A resistivity phase diagram, which is obtained from the current–voltage response, is presented here. The resistivity was expected to increase linearly as a function of the annealing temperature due to evolution of oxides. However, anomalous decreases are observed at different temperatures ranges, this may be related to the improvement of the crystallization and crystallite size when the temperature increases. - Highlights: ► The crystallization and electrical resistivity of oxides in a Cu films are studied. ► In annealing Cu films, the phase evolution Cu + Cu 2 O → Cu 2 O → Cu 2 O + CuO → CuO occurs. ► A resistivity phase diagram, obtained from the current–voltage response, is presented. ► Some decreases in the resistivity may be related to the crystallization.

  15. Electric and magnetic properties of oxidic titanium bronzes of rare earths Lnsub(2/3+x)TiOsub(3+-y) with perovskite structure

    International Nuclear Information System (INIS)

    Bazuev, G.V.; Makarova, O.V.; Shvejkin, G.P.

    1983-01-01

    A study was made on electric and magnetic properties of oxidic titanium bronzes of rare earths and their dependence on rare earth nature and the degree of rare earth sublattice filling was followed. Data on Lnsub(2/3)TiOsub(3-y) (Ln-Ce, Nd) anion-deficient perovskites are given as well. Investigated Cesub(2/3)TiOsub(2.985) and Ndsub(2/3)TiOsub(2.875) phases as well as defectless with respect to oxygen Lnsub(2/3)TiOsub(3) phases have rhombic structure of perovskite type with ordered position of Ln 3 + cations and vacancies. Specific electric resistance and thermoelectromotive force factor were determined in vacuum at 290-1173 K for samples in the form of parallelepiped of 3x5x25 mm 3 size. Magnetic susceptibility chi was determined at 77-300 K by Faraday method using a device based on magnetic balancewith electromagnetic compensation. Relative error during chi measuring didn't exceed +-2%. Collectivized behaviour of d-electrons of Ti 3 + cations in oxidic titanium bronzes of rare earths: Lnsub(2/3+x)TiOsub(3+-y) (Ln-La, Ce, Nd; 0 < x < 1/3), conditioned by formation of narrow, partly filled π*-zone, was established on the basis of measuring specific electric resistance and magnetic susceptibility

  16. Electric and magnetic properties of oxidic titanium bronzes of rare earths Lnsub(2/3+x)TiOsub(3+-y) with perovskite structure

    Energy Technology Data Exchange (ETDEWEB)

    Bazuev, G V; Makarova, O V; Shvejkin, G P [AN SSSR, Sverdlovsk. Inst. Khimii

    1983-01-01

    A study was made on electric and magnetic properties of oxidic titanium bronzes of rare earths and their dependence on rare earth nature and the degree of rare earth sublattice filling was followed. Data on Lnsub(2/3)TiOsub(3-y) (Ln-Ce, Nd) anion-deficient perovskites are given as well. Investigated Cesub(2/3)TiOsub(2.985) and Ndsub(2/3)TiOsub(2.875) phases as well as defectless with respect to oxygen Lnsub(2/3)TiOsub(3) phases have rhombic structure of perovskite type with ordered position of Ln/sup 3 +/ cations and vacancies. Specific electric resistance and thermoelectromotive force factor were determined in vacuum at 290-1173 K for samples in the form of parallelepiped of 3x5x25 mm/sup 3/ size. Magnetic susceptibility chi was determined at 77-300 K by Faraday method using a device based on magnetic balance with electromagnetic compensation. Relative error during chi measuring didn't exceed +-2%. Collectivized behaviour of d-electrons of Ti/sup 3 +/ cations in oxidic titanium bronzes of rare earths: Lnsub(2/3+x)TiOsub(3+-y) (Ln-La, Ce, Nd; 0 < x < 1/3), conditioned by formation of narrow, partly filled ..pi..*-zone, was established on the basis of measuring specific electric resistance and magnetic susceptibility.

  17. Chemical vapor deposition and electric characterization of perovskite oxides LaMO3 (M=Co, Fe, Cr and Mn) thin films

    International Nuclear Information System (INIS)

    Ngamou, Patrick Herve Tchoua; Bahlawane, Naoufal

    2009-01-01

    Oxides with a perovskite structure are important functional materials often used for the development of modern devices. In view of extending their applicability, it is necessary to efficiently control their growth as thin films using technologically relevant synthesis methods. Pulsed spray evaporation CVD was used to grow several perovskite-type oxides on planar silicon substrates at temperatures ranging from 500 to 700 deg. C. The optimization of the process control parameters allows the attainment of the perovskite structure as a single phase. The electrical characterization using the temperature-dependent conductivity and thermopower indicates the p-type conduction of the grown films and shows a decreasing concentration of the charge carrier, mobility and band gap energy in the sequence LaCoO 3 >LaMnO 3 >LaCrO 3 >LaFeO 3 . The investigation of the electric properties of the obtained perovskite thin films shows the versatility of CVD as a method for the development of innovative devices. - Graphical abstract: We report a single step deposition of perovskite thin films LaMO 3 (M: Co, Mn, Cr, Fe) using pulsed spray evaporation chemical vapor deposition. Electrical and thermopower properties, similar to these of bulk materials, could promote the development of modern thermoelectric devices based on thin films technology.

  18. Structural phase transition and erasable optically memorized effect in layered γ-In2Se3 crystals

    International Nuclear Information System (INIS)

    Ho, Ching-Hwa; Chen, Ying-Cen; Pan, Chia-Chi

    2014-01-01

    We have grown In 2 Se 3 layered-type crystals using chemical vapor transport method with ICl 3 as the transport agent. The as-grown crystals show two different color groups of black shiny for α-phase In 2 Se 3 and red to yellow for γ-phase In 2 Se 3 . High-resolution transmission electron micro scopy verifies crystalline state and structural polytype of the as-grown In 2 Se 3 . The results indicate that the α-In 2 Se 3 crystals present more crystalline states than those of the other amorphous γ-In 2 Se 3 . The amorphous effect on the advancing of optoelectronic property of γ-In 2 Se 3 shows erasable optical-memorized effect in the disordered and polycrystalline γ-In 2 Se 3 layers. Laser-induced photodarkening and annealed-recovery test verified that a reversible structural-phase transition of γ↔α can occur inside the γ-In 2 Se 3 . Thermoreflectance and Raman scattering measurements are carried out to identify the inter-phase transformation of the γ-In 2 Se 3 polycrystals using different heat treatments. Direct band gaps and Raman vibration modes for the γ- and α-In 2 Se 3 crystalline phases are, respectively, characterized and identified. The character of γ↔α inter-phase transition promotes feasible optical and optoelectronic applications of the γ-In 2 Se 3 material in optical memory, optics, and solar-energy devices

  19. Structural phase transition and erasable optically memorized effect in layered γ-In2Se3 crystals

    Science.gov (United States)

    Ho, Ching-Hwa; Chen, Ying-Cen; Pan, Chia-Chi

    2014-01-01

    We have grown In2Se3 layered-type crystals using chemical vapor transport method with ICl3 as the transport agent. The as-grown crystals show two different color groups of black shiny for α-phase In2Se3 and red to yellow for γ-phase In2Se3. High-resolution transmission electron micro scopy verifies crystalline state and structural polytype of the as-grown In2Se3. The results indicate that the α-In2Se3 crystals present more crystalline states than those of the other amorphous γ-In2Se3. The amorphous effect on the advancing of optoelectronic property of γ-In2Se3 shows erasable optical-memorized effect in the disordered and polycrystalline γ-In2Se3 layers. Laser-induced photodarkening and annealed-recovery test verified that a reversible structural-phase transition of γ↔α can occur inside the γ-In2Se3. Thermoreflectance and Raman scattering measurements are carried out to identify the inter-phase transformation of the γ-In2Se3 polycrystals using different heat treatments. Direct band gaps and Raman vibration modes for the γ- and α-In2Se3 crystalline phases are, respectively, characterized and identified. The character of γ↔α inter-phase transition promotes feasible optical and optoelectronic applications of the γ-In2Se3 material in optical memory, optics, and solar-energy devices.

  20. Effect of self purification on the structural optical and electrical properties of copper doped oxidized Zn films

    International Nuclear Information System (INIS)

    Koshy, Obey; Abdul Khadar, M.

    2015-01-01

    The effect of self purification mechanism is studied on oxidized Cu–Zn thin films. Oxidized Cu–Zn thin films were prepared by thermal evaporation on glass substrates. XRD studies indicate that the oxidized Cu–Zn thin films are of hexagonal wurtzite structure. AFM images shows that with increase in copper wt. percent the nanoparticle morphology of oxidized Zn film turned to one dimensional nanorod morphology. XPS spectra of the oxidized Cu–Zn thin films shows the oxidized state of zinc and copper. The PL spectra of oxidized Zn film showed a strong and narrow near band edge emission at 380 nm whereas in the case of oxidized Cu–Zn thin films the emission showed peak near 410 nm corresponding to peak related to copper. With increase in copper content, the intensity of the defect emission decreased due to the self purification mechanism in nanomaterials. In addition the resistivity of doped films increased due to the self purification mechanism in nanomaterials. - Highlights: • Copper doping in ZnO resulted in the increase in blue emission due to defect levels formed. • The intensity of the luminescence peak of the doped film sample decreased and resistivity increased due to the self purification mechanism in nanomaterials.

  1. Electrical properties of the LaLi y Co1 - y O3 - δ (0 ≤ y ≤ 0.10) oxides

    Science.gov (United States)

    Vecherskii, S. I.; Konopel'ko, M. A.; Batalov, N. N.; Antonov, B. D.; Reznitskikh, O. G.; Yaroslavtseva, T. V.

    2017-08-01

    The effect of the Li ion concentration on the phase composition, the electrical conductivity, and the thermoelectric power of the LaLi y Co1- y O3-δ (0 ≤ y ≤ 0.1) oxides synthesized by cocrystallization has been studied. It is found that the region of the perovskite-like solid solution LaLi y Co1- y O3-δ is no higher than y = 0.037. In the temperature range 300-1020 K, lithium alloying leads to an increase in the electrical conductivity and a decrease in the positive thermoelectric power of the single-phase samples compared to LaCoO3-δ. The results are discussed using the density of states model proposed by Senarus Rodriguez and Goodenough for LaCoO3-δ and La1- x Sr x CoO3-δ and using the Mott theory of noncrystalline substances.

  2. Low-cost label-free electrical detection of artificial DNA nanostructures using solution-processed oxide thin-film transistors.

    Science.gov (United States)

    Kim, Si Joon; Jung, Joohye; Lee, Keun Woo; Yoon, Doo Hyun; Jung, Tae Soo; Dugasani, Sreekantha Reddy; Park, Sung Ha; Kim, Hyun Jae

    2013-11-13

    A high-sensitivity, label-free method for detecting deoxyribonucleic acid (DNA) using solution-processed oxide thin-film transistors (TFTs) was developed. Double-crossover (DX) DNA nanostructures with different concentrations of divalent Cu ion (Cu(2+)) were immobilized on an In-Ga-Zn-O (IGZO) back-channel surface, which changed the electrical performance of the IGZO TFTs. The detection mechanism of the IGZO TFT-based DNA biosensor is attributed to electron trapping and electrostatic interactions caused by negatively charged phosphate groups on the DNA backbone. Furthermore, Cu(2+) in DX DNA nanostructures generates a current path when a gate bias is applied. The direct effect on the electrical response implies that solution-processed IGZO TFTs could be used to realize low-cost and high-sensitivity DNA biosensors.

  3. Electrical features of an amorphous indium-gallium-zinc-oxide film transistor using a double active matrix with different oxygen contents

    International Nuclear Information System (INIS)

    Koo, Ja Hyun; Kang, Tae Sung; Hong, Jin Pyo

    2012-01-01

    The electrical characteristics of amorphous indium-gallium-zinc-oxide (a-IGZO) thin film transistor (TFTs) are systematically studied using a double a-IGZO active layer that is composed of a-IGZO x (oxygen-ion-poor region) and a-IGZO y (oxygen-ion-rich-region). An active layer is designed to have a serially-stacked bi-layer matrix with different oxygen contents, providing the formation of different electron conduction channels. Two different oxygen contents in the active layer are obtained by varying the O 2 partial pressure during sputtering. The a-IGZO TFT based on a double active layer exhibits a high mobility of 9.1 cm 2 /Vsec, a threshold voltage (V T ) of 16.5 V, and ΔV T shifts of less than 1.5 V under gate voltage stress. A possible electrical sketch for the double active layer channel is also discussed.

  4. Rasurando rasura Erasing erasure

    Directory of Open Access Journals (Sweden)

    Jairo NUNES

    2000-01-01

    Full Text Available Este trabalho argumenta que há razões tanto conceptuais quanto empíricas para se abandonar a distinção entre apagamento e rasura que Chomsky (1995 propõe para dar conta de diferentes possibilidades de checagem. Como alternativa, o squib esboça uma análise baseada somente em apagamento.This paper argues that the distinction between deletion and erasure proposed by Chomsky (1995 to account for different checking possibilities should be abandoned on both conceptual and empirical grounds. As an alternative, the paper outlines an analysis based solely on deletion.

  5. Erasing the Education Deficit

    Science.gov (United States)

    Kirwan, William E.

    2006-01-01

    What steps are needed to be taken to rebuild public investment in America's higher education? In this article, the author offers three actions which he believes the US higher education community must collectively embrace and suggests that the higher education community should also learn to speak with a common voice. To help put that idea into…

  6. Prediction of the percolation threshold and electrical conductivity of self-assembled antimony-doped tin oxide nanoparticles into ordered structures in PMMA/ATO nanocomposites.

    Science.gov (United States)

    Jin, Youngho; Gerhardt, Rosario A

    2014-12-24

    Electrical percolation in nanocomposites consisting of poly(methyl methacrylate) (PMMA) and antimony tin oxide (ATO) nanoparticles was investigated experimentally using monosize and polydisperse polymer particles. The nanocomposites were fabricated by compression molding at 170 °C. The matrix PMMA was transformed into space filling polyhedra while the ATO nanoparticles distributed along the sharp edges of the matrix, forming a 3D interconnected network. The measured electrical resistivity showed that percolation was achieved in these materials at a very low ATO content of 0.99 wt % ATO when monosize PMMA was used, whereas 1.48 wt % ATO was needed to achieve percolation when the PMMA was polydispersed. A parametric finite element approach was chosen to model this unique microstructure-driven self-assembling percolation behavior. COMSOL Multiphysics was used to solve the effects of phase segregation between the matrix and the filler using a 2D simplified model in the frequency domain of the AC/DC module. It was found that the percolation threshold (pc) is affected by the size ratio between the matrix and the filler in a systematic way. Furthermore, simulations indicate that small deviations from perfect interconnection result mostly in changes in the electrical resistivity while the minimum DC resistivity achievable in any given composite is governed by the electrical conductivity of the filler, which must be accurately known in order to obtain an accurate prediction. The model is quite general and is able to predict percolation behavior in a number of other similarly processed segregated network nanocomposites.

  7. Analysis of current-voltage characteristics of Au/pentacene/fluorine polymer/indium zinc oxide diodes by electric-field-induced optical second-harmonic generation

    Energy Technology Data Exchange (ETDEWEB)

    Nishi, Shohei; Taguchi, Dai; Manaka, Takaaki; Iwamoto, Mitsumasa, E-mail: iwamoto@pe.titech.ac.jp [Department of Physical Electronics, Tokyo Institute of Technology, 2-12-1 S3-33, O-okayama, Meguro-ku, Tokyo 152-8552 (Japan)

    2015-06-28

    By using electric-field-induced optical second-harmonic generation measurement coupled with the conventional current-voltage (I-V) measurement, we studied the carrier transport of organic double-layer diodes with a Au/pentacene/fluorine polymer (FP)/indium zinc oxide (IZO) structure. The rectifying I-V characteristics were converted into the I-E characteristics of the FP and pentacene layers. Results suggest a model in which Schottky-type electron injection from the IZO electrode to the FP layer governs the forward electrical conduction (V > 0), where the space charge electric field produced in the FP layer by accumulated holes at the pentacene/FP interface makes a significant contribution. On the other hand, Schottky-type injection by accumulated interface electrons from the pentacene layer to the FP layer governs the backward electrical conduction (V < 0). The electroluminescence generated from the pentacene layer in the region V > 0 verifies the electron transport across the FP layer, and supports the above suggested model.

  8. Analysis of current-voltage characteristics of Au/pentacene/fluorine polymer/indium zinc oxide diodes by electric-field-induced optical second-harmonic generation

    International Nuclear Information System (INIS)

    Nishi, Shohei; Taguchi, Dai; Manaka, Takaaki; Iwamoto, Mitsumasa

    2015-01-01

    By using electric-field-induced optical second-harmonic generation measurement coupled with the conventional current-voltage (I-V) measurement, we studied the carrier transport of organic double-layer diodes with a Au/pentacene/fluorine polymer (FP)/indium zinc oxide (IZO) structure. The rectifying I-V characteristics were converted into the I-E characteristics of the FP and pentacene layers. Results suggest a model in which Schottky-type electron injection from the IZO electrode to the FP layer governs the forward electrical conduction (V > 0), where the space charge electric field produced in the FP layer by accumulated holes at the pentacene/FP interface makes a significant contribution. On the other hand, Schottky-type injection by accumulated interface electrons from the pentacene layer to the FP layer governs the backward electrical conduction (V < 0). The electroluminescence generated from the pentacene layer in the region V > 0 verifies the electron transport across the FP layer, and supports the above suggested model

  9. Effect of the synthesis conditions on the magnetic and electrical properties of the BaFeO3-x oxide: A metamagnetic behavior

    International Nuclear Information System (INIS)

    Gil de Muro, Izaskun; Insausti, Maite; Lezama, Luis; Rojo, Teofilo

    2005-01-01

    The BaFeO 2.95 oxide has been obtained from thermal decomposition of the [BaFe(C 3 H 2 O 4 ) 2 (H 2 O) 4 ] metallo-organic precursor at 800 deg. C under atmospheric oxygen pressure as small and homogeneous particles. From electronic paramagnetic resonance data, a metallic behavior in the 230-130K temperature range has been observed. Magnetic measurements confirm the existence of a ferro-antiferromagnetic transition at 178K. The magnetic properties of the BaFeO 2.95 oxide are strongly dependent on both temperature and magnetic field with a metamagnetic behavior. The synthesis conditions play an important role on the morphology and the electrical and magnetic properties. The syntherization of the sample produces a dramatic change in the transport properties and the existence of conductivity disappears

  10. Structural and electrical characteristics of high-k/metal gate metal oxide semiconductor capacitors fabricated on flexible, semi-transparent silicon (100) fabric

    KAUST Repository

    Rojas, Jhonathan Prieto

    2013-02-12

    In pursuit of flexible computers with high performance devices, we demonstrate a generic process to fabricate 10 000 metal-oxide-semiconductor capacitors (MOSCAPs) with semiconductor industry\\'s most advanced high-k/metal gate stacks on widely used, inexpensive bulk silicon (100) wafers and then using a combination of iso-/anisotropic etching to release the top portion of the silicon with the already fabricated devices as a mechanically flexible (bending curvature of 133 m−1), optically semi-transparent silicon fabric (1.5 cm × 3 cm × 25 μm). The electrical characteristics show 3.7 nm effective oxide thickness, −0.2 V flat band voltage, and no hysteresis from the fabricated MOSCAPs.

  11. Structural and electrical characteristics of high-k/metal gate metal oxide semiconductor capacitors fabricated on flexible, semi-transparent silicon (100) fabric

    KAUST Repository

    Rojas, Jhonathan Prieto; Hussain, Muhammad Mustafa; Sevilla, Galo T.

    2013-01-01

    In pursuit of flexible computers with high performance devices, we demonstrate a generic process to fabricate 10 000 metal-oxide-semiconductor capacitors (MOSCAPs) with semiconductor industry's most advanced high-k/metal gate stacks on widely used, inexpensive bulk silicon (100) wafers and then using a combination of iso-/anisotropic etching to release the top portion of the silicon with the already fabricated devices as a mechanically flexible (bending curvature of 133 m−1), optically semi-transparent silicon fabric (1.5 cm × 3 cm × 25 μm). The electrical characteristics show 3.7 nm effective oxide thickness, −0.2 V flat band voltage, and no hysteresis from the fabricated MOSCAPs.

  12. Electrical analysis of high dielectric constant insulator and metal gate metal oxide semiconductor capacitors on flexible bulk mono-crystalline silicon

    KAUST Repository

    Ghoneim, Mohamed T.

    2015-06-01

    We report on the electrical study of high dielectric constant insulator and metal gate metal oxide semiconductor capacitors (MOSCAPs) on a flexible ultra-thin (25 μm) silicon fabric which is peeled off using a CMOS compatible process from a standard bulk mono-crystalline silicon substrate. A lifetime projection is extracted using statistical analysis of the ramping voltage (Vramp) breakdown and time dependent dielectric breakdown data. The obtained flexible MOSCAPs operational voltages satisfying the 10 years lifetime benchmark are compared to those of the control MOSCAPs, which are not peeled off from the silicon wafer. © 2014 IEEE.

  13. Development of a Novel Efficient Solid-Oxide Hybrid for Co-generation of Hydrogen and Electricity Using Nearby Resources for Local Application

    Energy Technology Data Exchange (ETDEWEB)

    Tao, Greg, G.; Virkar, Anil, V.; Bandopadhyay, Sukumar; Thangamani, Nithyanantham; Anderson, Harlan, U.; Brow, Richard, K.

    2009-06-30

    Developing safe, reliable, cost-effective, and efficient hydrogen-electricity co-generation systems is an important step in the quest for national energy security and minimized reliance on foreign oil. This project aimed to, through materials research, develop a cost-effective advanced technology cogenerating hydrogen and electricity directly from distributed natural gas and/or coal-derived fuels. This advanced technology was built upon a novel hybrid module composed of solid-oxide fuel-assisted electrolysis cells (SOFECs) and solid-oxide fuel cells (SOFCs), both of which were in planar, anode-supported designs. A SOFEC is an electrochemical device, in which an oxidizable fuel and steam are fed to the anode and cathode, respectively. Steam on the cathode is split into oxygen ions that are transported through an oxygen ion-conducting electrolyte (i.e. YSZ) to oxidize the anode fuel. The dissociated hydrogen and residual steam are exhausted from the SOFEC cathode and then separated by condensation of the steam to produce pure hydrogen. The rationale was that in such an approach fuel provides a chemical potential replacing the external power conventionally used to drive electrolysis cells (i.e. solid oxide electrolysis cells). A SOFC is similar to the SOFEC by replacing cathode steam with air for power generation. To fulfill the cogeneration objective, a hybrid module comprising reversible SOFEC stacks and SOFC stacks was designed that planar SOFECs and SOFCs were manifolded in such a way that the anodes of both the SOFCs and the SOFECs were fed the same fuel, (i.e. natural gas or coal-derived fuel). Hydrogen was produced by SOFECs and electricity was generated by SOFCs within the same hybrid system. A stand-alone 5 kW system comprising three SOFEC-SOFC hybrid modules and three dedicated SOFC stacks, balance-of-plant components (including a tailgas-fired steam generator and tailgas-fired process heaters), and electronic controls was designed, though an overall

  14. Electrical energy per order and current efficiency for electrochemical oxidation of p-chlorobenzoic acid with boron-doped diamond anode.

    Science.gov (United States)

    Lanzarini-Lopes, Mariana; Garcia-Segura, Sergi; Hristovski, Kiril; Westerhoff, Paul

    2017-12-01

    Electrochemical oxidation (EO) is an advanced oxidation process for water treatment to mineralize organic contaminants. While proven to degrade a range of emerging pollutants in water, less attention has been given to quantify the effect of operational variables such applied current density and pollutant concentration on efficiency and energy requirements. Particular figures of merit were mineralization current efficiency (MCE) and electrical energy per order (E EO ). Linear increases of applied current exponentially decreased the MCE due to the enhancement of undesired parasitic reactions that consumed generated hydroxyl radical. E EO values ranged from 39.3 to 331.8 kW h m -3 order -1 . Increasing the applied current also enhanced the E EO due to the transition from kinetics limited by current to kinetics limited by mass transfer. Further increases in current did not influence the removal rate, but it raised the E EO requirement. The E EO requirement diminished when decreasing initial pollutant loading with the increase of the apparent kinetic rate because of the relative availability of oxidant per pollutant molecule in solution at a defined current. Oxidation by-products released were identified, and a plausible degradative pathway has been suggested. Copyright © 2017. Published by Elsevier Ltd.

  15. On the Defect Chemistry, Electrical Properties and Electrochemical Performances As Solid Oxide Fuel Cell Cathode Materials of New La-(Sr/Vac)-Co-Ti-O Perovskites

    DEFF Research Database (Denmark)

    García-Alvarado, Flaviano; Gómez-Pérez, Alejandro; Pérez-Flores, Juan Carlos

    2015-01-01

    Perovskite-type oxides are well known materials that have been proposed as electrodes and electrolytes for solid oxide fuel cells (SOFCs). The structure, which is referred to the ABO3 stoichiometry, can accommodate many different transition metal ions in the B-site; its electronic conductivity...... materials with valuable properties for SOFCs. We have analysed the effect of La3+ by Sr2+ substitution and vacancies creation in several double perovskites, La2MTiO6 (M = Co, Ni, Cu). Defect chemistry and electrical behavior have been investigated in order to unveil the nature of charge carriers....... Electrochemical performances have been assessed through polarization resistance measurements. In this communication we present the results regarding La2SrTiO6 perovskites. La/Sr substitution in La2-xSrxCoTiO6-δ produces Co2+ to Co3+ oxidation while vacancies in La2-xCoTiO6-δ yield Co2+ oxidation for low A...

  16. Effect of a PEDOT:PSS modified layer on the electrical characteristics of flexible memristive devices based on graphene oxide:polyvinylpyrrolidone nanocomposites

    Science.gov (United States)

    Kim, Woo Kyum; Wu, Chaoxing; Kim, Tae Whan

    2018-06-01

    The electrical characteristics of flexible memristive devices utilizing a graphene oxide (GO):polyvinylpyrrolidone (PVP) nanocomposite charge-trapping layer with a poly(3,4-ethylenedioxythiophene):poly(styrene sulfonate) (PEDOT:PSS)-modified layer fabricated on an indium-tin-oxide (ITO)-coated polyethylene glycol naphthalate (PEN) substrate were investigated. Current-voltage (I-V) curves for the Al/GO:PVP/PEDOT:PSS/ITO/PEN devices showed remarkable hysteresis behaviors before and after bending. The maximum memory margins of the devices before and after 100 bending cycles were approximately 7.69 × 103 and 5.16 × 102, respectively. The devices showed nonvolatile memory effect with a retention time of more than 1 × 104 s. The "Reset" voltages were distributed between 2.3 and 3.5 V, and the "Set" voltages were dispersed between -0.7 and -0.2 V, indicative of excellent, uniform electrical performance. The endurance number of ON/OFF-switching and bending cycles for the devices was 1 × 102, respectively. The bipolar resistive switching behavior was explained on the basis of I-V results. In particular, the bipolar resistive switching behaviors of the LRS and the HRS for the devices are dominated by the Ohmic and space charge current mechanisms, respectively.

  17. An electric detection of immunoglobulin G in the enzyme-linked immunosorbent assay using an indium oxide nanoparticle ion-sensitive field-effect transistor

    International Nuclear Information System (INIS)

    Lee, Dongjin; Cui, Tianhong

    2012-01-01

    Semiconducting nanoparticle ion-sensitive field-effect transistors (ISFETs) are used to detect immunoglobulin G (IgG) in the conventional enzyme-linked immunosorbent assay (ELISA). Indium oxide and silica nanoparticles were layer-by-layer self-assembled with the oppositely charged polyelectrolyte as the electrochemical transducer and antibody immobilization site, respectively. The assay was conducted on a novel platform of indium oxide nanoparticle ISFETs, where the electric signals are generated in response to the concentration of target IgG using the labeled detecting antibody. The sandwiched ELISA structure catalyzed the conversion of the acidic substrate into neutral substance with the aid of horseradish peroxidase. The pH change in the substrate solution was detected by nanoparticle ISFETs. Normal rabbit IgG was used as a model antigen whose detection limit of 0.04 ng ml −1 was found. The facile electric detection in the conventional assay through the semiconducting nanoparticle ISFET has potential applications as a point-of-care detection or a sensing element in a lab-on-a-chip system

  18. Influence of growth temperature on electrical, optical, and plasmonic properties of aluminum:zinc oxide films grown by radio frequency magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Dondapati, Hareesh; Santiago, Kevin; Pradhan, A. K. [Center for Materials Research, Norfolk State University, 700 Park Avenue, Norfolk, Virginia 23504 (United States)

    2013-10-14

    We have investigated the responsible mechanism for the observation of metallic conductivity at room temperature and metal-semiconductor transition (MST) at lower temperatures for aluminum-doped zinc oxide (AZO) films. AZO films were grown on glass substrates by radio-frequency magnetron sputtering with varying substrate temperatures (T{sub s}). The films were found to be crystalline with the electrical resistivity close to 1.1 × 10{sup −3} Ω cm and transmittance more than 85% in the visible region. The saturated optical band gap of 3.76 eV was observed for the sample grown at T{sub s} of 400 °C, however, a slight decrease in the bandgap was noticed above 400 °C, which can be explained by Burstein–Moss effect. Temperature dependent resistivity measurements of these highly conducting and transparent films showed a MST at ∼110 K. The observed metal-like and metal-semiconductor transitions are explained by taking into account the Mott phase transition and localization effects due to defects. All AZO films demonstrate crossover in permittivity from positive to negative and low loss in the near-infrared region, illustrating its applications for plasmonic metamaterials, including waveguides for near infrared telecommunication region. Based on the results presented in this study, the low electrical resistivity and high optical transmittance of AZO films suggested a possibility for the application in the flexible electronic devices, such as transparent conducting oxide film on LEDs, solar cells, and touch panels.

  19. Simulation of thermal stresses in anode-supported solid oxide fuel cell stacks. Part II: Loss of gas-tightness, electrical contact and thermal buckling

    Science.gov (United States)

    Nakajo, Arata; Wuillemin, Zacharie; Van herle, Jan; Favrat, Daniel

    Structural stability issues in planar solid oxide fuel cells arise from the mismatch between the coefficients of thermal expansion of the components. The stress state at operating temperature is the superposition of several contributions, which differ depending on the component. First, the cells accumulate residual stresses due to the sintering phase during the manufacturing process. Further, the load applied during assembly of the stack to ensure electric contact and flatten the cells prevents a completely stress-free expansion of each component during the heat-up. Finally, thermal gradients cause additional stresses in operation. The temperature profile generated by a thermo-electrochemical model implemented in an equation-oriented process modelling tool (gPROMS) was imported into finite-element software (ABAQUS) to calculate the distribution of stress and contact pressure on all components of a standard solid oxide fuel cell repeat unit. The different layers of the cell in exception of the cathode, i.e. anode, electrolyte and compensating layer were considered in the analysis to account for the cell curvature. Both steady-state and dynamic simulations were performed, with an emphasis on the cycling of the electrical load. The study includes two different types of cell, operation under both thermal partial oxidation and internal steam-methane reforming and two different initial thicknesses of the air and fuel compressive sealing gaskets. The results generated by the models are presented in two papers: Part I focuses on cell cracking. In the present paper, Part II, the occurrences of loss of gas-tightness in the compressive gaskets and/or electrical contact in the gas diffusion layer were identified. In addition, the dependence on temperature of both coefficients of thermal expansion and Young's modulus of the metallic interconnect (MIC) were implemented in the finite-element model to compute the plastic deformation, while the possibilities of thermal buckling

  20. Novel Non-Stoichiometric Manganese – Cobalt – Nickel – Oxide Composite as Humidity Sensor Through Solid-State Electrical Conductivity Measurements

    Directory of Open Access Journals (Sweden)

    R. Sundaram

    2006-08-01

    Full Text Available Equimolar amounts of manganese(II chloride, cobalt(III nitrate and nickel(II chloride in aqueous solution were reacted with ammonia and the resulting precipitate of hydroxides was heated to 7500 C in 6h to yield a non stoichiometric oxides having a composition of Mn0.06Co0.6Ni0.6O2.5 as analyzed by atomic absorption spectroscopy to a pellet and sintered at 6000 C. Characterization of the material has been made with AAS, Far-IR, TG-DTA, XRD, SEM, VSM and electrical conductance measurement. The far-IR spectra indicated the presence of metal-oxygen bonds and the discrete nature of the oxide was established from power X-ray diffraction pattern recorded at room temperature. The thermogravimetric data indicated the successive loss and gain of fraction of oxygen atoms, a specific feature of non-stoichiometric metal oxides. It was subjected to solid-state DC electrical conductivity measurements at room temperature. The current increases linearly with applied field and exponentially with increase in temperature showing conformance to ohmic law and semiconducting nature. The scanning electron microscopy (SEM studies were carried out to study the surface and pores structure of the sensor materials. The Brunauer-Emmett-Teller (BET surface adsorption studies showed that the radiuses of the pore sizes were found to be distributed from 10-45A with the pore specific volume being 0.01 cm3 g-1. As the composites having micropores are preferred for humidity sensing properties, the material was subjected to water vapour of different humidity achieved by various water buffers at room temperature and the electrical conductivity was measured as a function of relative humidity (RH. The electrical resistivity drastically decreases with increase in humidity, proving the material to be a good water vapour sensor. The sensitivity factor (Sf was 55000 in the range 5–98% RH, meaning the resistivity falls by a factor of 5.5 x 104 when the atmospheric RH increases from 5

  1. Electrical and optical properties of poly(3,4-ethylenedioxythiophene) oxidized with poly(4-styrenesulfonate) and AuCl3-doped reduced graphene oxide/single-walled carbon nanotube films for ultraviolet light-emitting diodes.

    Science.gov (United States)

    Lee, Byeong Ryong; Lee, Jae Hoon; Kim, Kyeong Heon; Kim, Hee-Dong; Kim, Tae Geun

    2014-12-01

    We report the effects of poly(3,4-ethylenedioxythiophene) oxidized with poly(4-styrenesulfonate) ( PSS) and gold chloride (AuCl) co-doping on the electrical and optical properties of reduced graphene oxide (RGO)/single-walled carbon nanotube (SWNT) films fabricated by dipcoating methods. The RGO/SWNT films were doped with both AuCl3 dissolved in nitromethane and PSS hole injection layers by spin coating to improve their electrical properties by increasing the work function of the RGO/SWNT films, thereby reducing the Schottky barrier height between the RGO/SWNT and p-GaN films. As a result, we obtained a reduced sheet resistance of 851.9 Ω/Ω and a contact resistance of 1.97 x 10(-1) Ω x cm2, together with a high transmittance of 84.1% at 380 nm. The contact resistance of these films should be further reduced to fully utilize the feature of the electrode scheme proposed in this work, but the current result suggests its potential use as a transparent conductive electrode for ultraviolet light-emitting diodes.

  2. Upgrading versus reforming: an energy and exergy analysis of two Solid Oxide Fuel Cell-based systems for a convenient biogas-to-electricity conversion

    International Nuclear Information System (INIS)

    Baldinelli, A.; Barelli, L.; Bidini, G.

    2017-01-01

    Highlights: • Biogas-to-electricity conversion through Solid Oxide Fuel Cell is investigated. • Two solutions are compared for biogas-to-electricity conversion. • Direct feeding by partially upgraded biogas meets with fuel cell long operation. • Best energy and exergy performances are obtained with an innovative system-design. • A sensitivity analysis on the process parameters determines its convenience margin. - Abstract: Aiming at designing biogas-to-electricity advanced systems, Solid Oxide Fuel Cells are promising candidates. They benefit from scalability on plant sizes that suit anaerobic digesters potentialities. For biogas-Solid Oxide Fuel Cells applications, the implementation of an external pre-reformer is usually considered. However, the possibility to perform direct fuel feeding to the Solid Oxide Fuel Cell offers new opportunities towards the realization of lean systems, which are competitive especially on small-scale installations (i.e. on-farm biogas-to-electricity conversion). In this frame, scientific literature is rather poor and, to cover this gap, system simulations are called for two reasons: first, to demonstrate the potential efficiency gain of new concepts; second, to provide a meaningful support for long-term experimental investigation on Solid Oxide Fuel Cells operated upon direct feeding of unreformed biogas. For that, the current study compares two system designs for biogas utilization into Solid Oxide Fuel Cells. The conventional one realizes biogas steam reforming prior the fuel cell, while the novel concept is based on direct feeding of partially upgraded biogas by means of carbon dioxide-separation membranes. As main outcome of the study, the system equipped with carbon dioxide-separation membranes achieves better performances than its conventional competitor does, scoring 51.1% energy efficiency and 52.3% exergy efficiency (compared to 37.2% and 38.6% respectively exhibited by the reformer-based system). Because of the lack

  3. Electrical memory features of ferromagnetic CoFeAlSi nano-particles embedded in metal-oxide-semiconductor matrix

    International Nuclear Information System (INIS)

    Lee, Ja Bin; Kim, Ki Woong; Lee, Jun Seok; An, Gwang Guk; Hong, Jin Pyo

    2011-01-01

    Half-metallic Heusler material Co 2 FeAl 0.5 Si 0.5 (CFAS) nano-particles (NPs) embedded in metal-oxide-semiconductor (MOS) structures with thin HfO 2 tunneling and MgO control oxides were investigated. The CFAS NPs were prepared by rapid thermal annealing. The formation of well-controlled CFAS NPs on thin HfO 2 tunneling oxide was confirmed by atomic force microscopy (AFM). Memory characteristics of CFAS NPs in MOS devices exhibited a large memory window of 4.65 V, as well as good retention and endurance times of 10 5 cycles and 10 9 s, respectively, demonstrating the potential of CFAS NPs as promising candidates for use in charge storage.

  4. Electrical property heterogeneity at transparent conductive oxide/organic semiconductor interfaces: mapping contact ohmicity using conducting-tip atomic force microscopy.

    Science.gov (United States)

    MacDonald, Gordon A; Veneman, P Alexander; Placencia, Diogenes; Armstrong, Neal R

    2012-11-27

    We demonstrate mapping of electrical properties of heterojunctions of a molecular semiconductor (copper phthalocyanine, CuPc) and a transparent conducting oxide (indium-tin oxide, ITO), on 20-500 nm length scales, using a conductive-probe atomic force microscopy technique, scanning current spectroscopy (SCS). SCS maps are generated for CuPc/ITO heterojunctions as a function of ITO activation procedures and modification with variable chain length alkyl-phosphonic acids (PAs). We correlate differences in small length scale electrical properties with the performance of organic photovoltaic cells (OPVs) based on CuPc/C(60) heterojunctions, built on these same ITO substrates. SCS maps the "ohmicity" of ITO/CuPc heterojunctions, creating arrays of spatially resolved current-voltage (J-V) curves. Each J-V curve is fit with modified Mott-Gurney expressions, mapping a fitted exponent (γ), where deviations from γ = 2.0 suggest nonohmic behavior. ITO/CuPc/C(60)/BCP/Al OPVs built on nonactivated ITO show mainly nonohmic SCS maps and dark J-V curves with increased series resistance (R(S)), lowered fill-factors (FF), and diminished device performance, especially near the open-circuit voltage. Nearly optimal behavior is seen for OPVs built on oxygen-plasma-treated ITO contacts, which showed SCS maps comparable to heterojunctions of CuPc on clean Au. For ITO electrodes modified with PAs there is a strong correlation between PA chain length and the degree of ohmicity and uniformity of electrical response in ITO/CuPc heterojunctions. ITO electrodes modified with 6-8 carbon alkyl-PAs show uniform and nearly ohmic SCS maps, coupled with acceptable CuPc/C(60)OPV performance. ITO modified with C14 and C18 alkyl-PAs shows dramatic decreases in FF, increases in R(S), and greatly enhanced recombination losses.

  5. Characterization of oxidation resistance of stainless steels at high temperature by metallographic examinations and in-situ electrical resistance measurements; Charakterisierung der Oxidationsbestaendigkeit in nichtrostenden Staehlen bei hoher Temperatur durch Metallographische Untersuchungen und In-Situ-Messungen des elektrischen Widerstands

    Energy Technology Data Exchange (ETDEWEB)

    Bruncko, Mihael; Rudolf, Rebeka; Anzel, Ivan [Maribor Univ. (Slovenia). Faculty of Mechanical Engineering; Mehrabi, Kambiz [Pankl Drivetrain Systems GmbH und Co. KG, Kapfenberg (Austria); Kneissl, Albert C. [Leoben Univ. (Austria). Dept. of Physical Metallurgy and Materials Testing

    2013-07-01

    Practically all metals and alloys survive high-temperature exposure by growing oxide scales and/or by precipitation of the oxide particles in the matrix. Formed products can grow in shape of external oxide layers on surfaces, or as discrete oxide particles precipitated in a metal matrix. The first case represents external oxidation, and the other case is called internal oxidation. These processes are very important, because they determine the properties and applicability of metallic materials. Generally, they are undesired, because they cause deterioration of the mechanical properties and decomposition of metallic material. On the other side, the controlled process of external oxidation could be used for formation of protective coatings and the internal oxidation for dispersion strengthening of materials. In this paper we present monitoring of high-temperature oxidation of X12Cr13 stainless steel by in-situ electrical resistance measurements at different annealing temperatures in the air atmosphere. We determined the kinetics of oxide scale formation and its morphology with additional metallographic examination made by optical and scanning electron microscopy. The results of this research work show that in-situ monitoring and characterization of high-temperature oxidation present a strong tool that will contribute to a better fundamental understanding of the phenomena that occur during high-temperature oxidation of metallic materials. (orig.)

  6. Effect of rose water on structural, optical and electrical properties of composites of reduced graphene oxide-poly (vinyl alcohol) (PVA) grafted with silver nanoparticles

    Science.gov (United States)

    Kumar, Devender; Wadhwa, Heena; Mahendia, Suman; Chand, Fakir; Kumar, Shyam

    2017-02-01

    In this work, nanocomposites of reduced graphene oxide-poly (vinyl alcohol) (PVA) grafted with silver nanoparticles (rGO-PVA-Ag) were prepared in the absence and presence of rose water. The optical characterizations of prepared nanocomposites were done through UV-visible spectroscopy and Transmission Electron Microscopy (TEM) and Raman spectroscopy was employed for the surface characterization. The grafted silver (Ag) nanoparticles are found to be almost spherical in shape with reduction in their mean diameter from 47 nm to 26 nm after addition of rose water. The UV-visible absorption spectra of as-prepared rGO-PVA-Ag nanocomposites without and with rose water depicted surface plasmon resonance (SPR) peak at around 448 nm which coincides with the predicted spectra from simulation based on the Mie Theory. The electrical dc conductivity measurements as the function of temperature from room temperature to 55 °C were investigated. It has been found that use of rose water in synthesis process increases the electrical conductivity of the rGO-PVA-Ag. The mode of the electrical conduction in the composites can be explained using Efros-Shklovskii Variable Range Hopping mechanism (ES VRH).

  7. A comparative study of quantum yield and electrical energy per order (E(Eo)) for advanced oxidative decolourisation of reactive azo dyes by UV light.

    Science.gov (United States)

    Muruganandham, M; Selvam, K; Swaminathan, M

    2007-06-01

    This paper evaluates the quantum yield and electrical energy per order (E(Eo)) efficiency of Reactive Orange 4 (RO4) and Reactive Yellow 14 (RY14) azo dyes by three advanced oxidation processes (AOPs). Both dyes were completely decolourised by all these processes. The relative decolourisation efficiencies of these processes were in the following order: Fe(2+)/H(2)O(2)/UV>UV/TiO(2)>UV/H(2)O(2). The low efficiency of UV/H(2)O(2) process is mainly due to low UV absorption by hydrogen peroxide at the 365nm. The figure of merit E(Eo) values showed that UV/H(2)O(2) process consumes more electrical energy than the other two processes. The electrical energy consumption is in the following order: UV/H(2)O(2)>UV/TiO(2)>Fe(2+)/H(2)O(2)/UV. At low initial dye concentration higher quantum yield was observed in UV/TiO(2) process, whereas in photo-Fenton process higher quantum yield was observed at high initial dye concentration. The structure of dye molecule also influences the quantum yield and E(Eo) value.

  8. A comparative study of quantum yield and electrical energy per order (E Eo) for advanced oxidative decolourisation of reactive azo dyes by UV light

    International Nuclear Information System (INIS)

    Muruganandham, M.; Selvam, K.; Swaminathan, M.

    2007-01-01

    This paper evaluates the quantum yield and electrical energy per order (E Eo ) efficiency of Reactive Orange 4 (RO4) and Reactive Yellow 14 (RY14) azo dyes by three advanced oxidation processes (AOPs). Both dyes were completely decolourised by all these processes. The relative decolourisation efficiencies of these processes were in the following order: Fe 2+ /H 2 O 2 /UV > UV/TiO 2 > UV/H 2 O 2 . The low efficiency of UV/H 2 O 2 process is mainly due to low UV absorption by hydrogen peroxide at the 365 nm. The figure of merit E Eo values showed that UV/H 2 O 2 process consumes more electrical energy than the other two processes. The electrical energy consumption is in the following order: UV/H 2 O 2 > UV/TiO 2 > Fe 2+ /H 2 O 2 /UV. At low initial dye concentration higher quantum yield was observed in UV/TiO 2 process, whereas in photo-Fenton process higher quantum yield was observed at high initial dye concentration. The structure of dye molecule also influences the quantum yield and E Eo value

  9. Investigation of 'surface donors' in Al2O3/AlGaN/GaN metal-oxide-semiconductor heterostructures: Correlation of electrical, structural, and chemical properties

    Science.gov (United States)

    Ťapajna, M.; Stoklas, R.; Gregušová, D.; Gucmann, F.; Hušeková, K.; Haščík, Š.; Fröhlich, K.; Tóth, L.; Pécz, B.; Brunner, F.; Kuzmík, J.

    2017-12-01

    III-N surface polarization compensating charge referred here to as 'surface donors' (SD) was analyzed in Al2O3/AlGaN/GaN metal-oxide-semiconductor (MOS) heterojunctions using scaled oxide films grown by metal-organic chemical vapor deposition at 600 °C. We systematically investigated impact of HCl pre-treatment prior to oxide deposition and post-deposition annealing (PDA) at 700 °C. SD density was reduced down to 1.9 × 1013 cm-2 by skipping HCl pre-treatment step as compared to 3.3 × 1013 cm-2 for structures with HCl pre-treatment followed by PDA. The nature and origin of SD was then analyzed based on the correlation between electrical, micro-structural, and chemical properties of the Al2O3/GaN interfaces with different SD density (NSD). From the comparison between distributions of interface traps of MOS heterojunction with different NSD, it is demonstrated that SD cannot be attributed to interface trapped charge. Instead, variation in the integrity of the GaOx interlayer confirmed by X-ray photoelectron spectroscopy is well correlated with NSD, indicating SD may be formed by border traps at the Al2O3/GaOx interface.

  10. Studies on the electrical properties of reactive DC magnetron-sputtered indium-doped silver oxide thin films: The role of oxygen

    Energy Technology Data Exchange (ETDEWEB)

    Subrahmanyam, A [Semiconductor Physics Laboratory, Department of Physics, Indian Institute of Technology Madras, Chennai 600036 (India); Barik, Ullash Kumar [Semiconductor Physics Laboratory, Department of Physics, Indian Institute of Technology Madras, Chennai 600036 (India)

    2007-03-15

    Indium ({approx}10 at.%)-doped silver oxide (AIO) thin films have been prepared on glass substrates at room temperature (300 K) by reactive DC magnetron sputtering technique using an alloy target made of pure (99.99%) silver and indium (90:10 at.%) metals. The oxygen flow rates have been varied in the range 0.00-3.44 sccm during sputtering. The X-ray diffraction data on these indium-doped silver oxide films show polycrystalline nature. With increasing oxygen flow rate, the carrier concentration, the Hall mobility and the electron mean free path decrease. These films show a very low positive temperature coefficient of resistivity {approx}3.40x10{sup -8} ohm-cm/K. The work function values for these films (measured by Kelvin probe technique) are in the range 4.81-5.07 eV. The high electrical resistivity indicate that the films are in the island state (size effects). Calculations of the partial ionic charge (by Sanderson's theory) show that indium doping in silver oxide thin films enhance the ionicity.

  11. Studies on the electrical properties of reactive DC magnetron-sputtered indium-doped silver oxide thin films: The role of oxygen

    International Nuclear Information System (INIS)

    Subrahmanyam, A.; Barik, Ullash Kumar

    2007-01-01

    Indium (∼10 at.%)-doped silver oxide (AIO) thin films have been prepared on glass substrates at room temperature (300 K) by reactive DC magnetron sputtering technique using an alloy target made of pure (99.99%) silver and indium (90:10 at.%) metals. The oxygen flow rates have been varied in the range 0.00-3.44 sccm during sputtering. The X-ray diffraction data on these indium-doped silver oxide films show polycrystalline nature. With increasing oxygen flow rate, the carrier concentration, the Hall mobility and the electron mean free path decrease. These films show a very low positive temperature coefficient of resistivity ∼3.40x10 -8 ohm-cm/K. The work function values for these films (measured by Kelvin probe technique) are in the range 4.81-5.07 eV. The high electrical resistivity indicate that the films are in the island state (size effects). Calculations of the partial ionic charge (by Sanderson's theory) show that indium doping in silver oxide thin films enhance the ionicity

  12. Pulsed electric field improves the bioprotective capacity of purées for different coloured carrot cultivars against H2O2-induced oxidative damage.

    Science.gov (United States)

    Leong, Sze Ying; Oey, Indrawati; Burritt, David John

    2016-04-01

    This research aimed to study the effect of pulsed electric field (PEF) processing on the bioprotective capacity of carrot purée for White Belgian, Yellow Solar, Nantes, Nutri Red and Purple Haze cultivars against H2O2-induced oxidative damage. The bioprotective capacity was determined using cell viability, membrane integrity and nitric oxide (NO) production in a human Caco-2 cell culture assay. Total carotenoids, total anthocyanins, total vitamin C and total phenolics were also evaluated. Compared to the untreated purée, Purple Haze and Nutri Red processed at 303 kJ/kg completely increased Caco-2 cells resistance towards oxidative damage by recovering the cell viability and inhibiting NO production. For cultivar with low carotenoid levels, i.e. Yellow Solar, the application of 0.8 kV/cm resulted in a higher total carotenoid content in the purée than its untreated counterpart, leading to an improved bioprotective effect. This study clearly shows that PEF could add value to carrots by maximising bioprotective effects. Copyright © 2015 Elsevier Ltd. All rights reserved.

  13. Shrinkage Effects of the Conduction Zone in the Electrical Properties of Metal Oxide Nanocrystals: The Basis for Room Temperature Conductometric Gas Sensor

    Directory of Open Access Journals (Sweden)

    M. Manzanares

    2009-01-01

    Full Text Available The influence of charge localized at the surface of minute metal oxide nanocrystals was studied in WO3 and In2O3 nanostructures, which were obtained replicating mesoporous silica templates. Here, it is shown that the very high resistive states observed at room temperature and dark conditions were originated by the total shrinkage of the conductive zone in the inner part of these nanocrystals. On the contrary, at room temperature and under UV illumination, both photogenerated electron-hole pairs and empty surface states generated by photons diminished the negative charge accumulated at the surface, enlarging the conductive zone and, as a consequence, leading to a reduction of the electrical resistance. Under these conditions, empty surface states produced by UV light reacted with oxidizing gaseous molecules. The charge exchange associated to these reactions also affected the size of the inner conductive zone, and leaded to a new steady-state resistance. These chemical, physical and geometrical effects can be used for gas detection, and constitutes the basis for developing novel room temperature conductometric gas sensors responsive to oxidizing species.

  14. Electrically conductive nanostructured silver doped zinc oxide (Ag:ZnO) prepared by solution-immersion technique

    International Nuclear Information System (INIS)

    Afaah, A. N.; Asib, N. A. M.; Aadila, A.; Khusaimi, Z.; Mohamed, R.; Rusop, M.

    2016-01-01

    p-type ZnO films have been fabricated on ZnO-seeded glass substrate, using AgNO_3 as a source of silver dopant by facile solution-immersion. Cleaned glass substrate were seeded with ZnO by mist-atomisation, and next the seeded substrates were immersed in Ag:ZnO solution. The effects of Ag doping concentration on the Ag-doped ZnO have been investigated. The substrates were immersed in different concentrations of Ag dopant with variation of 0, 1, 3, 5 and 7 at. %. The surface morphology of the films was characterized by field emission scanning electron microscope (FESEM). In order to investigate the electrical properties, the films were characterized by Current-Voltage (I-V) measurement. FESEM micrographs showed uniform distribution of nanostructured ZnO and Ag:ZnO. Besides, the electrical properties of Ag-doped ZnO were also dependent on the doping concentration. The I-V measurement result indicated the electrical properties of 1 at. % Ag:ZnO thin film owned highest electrical conductivity.

  15. Variable Charge and Electrical Double Layer of Mineral-Water Interfaces: Silver Halides versus Metal (Hydr)Oxides

    NARCIS (Netherlands)

    Hiemstra, T.

    2012-01-01

    Classically, silver (Ag) halides have been used to understand thermodynamic principles of the charging process and the corresponding development of the electrical double layer (EDL). A mechanistic approach to the processes on the molecular level has not yet been carried out using advanced surface

  16. Electrostatic and Electrochemical Nature of Liquid-Gated Electric-Double-Layer Transistors Based on Oxide Semiconductors

    NARCIS (Netherlands)

    Yuan, Hongtao; Shimotani, Hidekazu; Ye, Jianting; Yoon, Sungjae; Aliah, Hasniah; Tsukazaki, Atsushi; Kawasaki, Masashi; Iwasa, Yoshihiro

    2010-01-01

    The electric-double-layer (EDL) formed at liquid/solid interfaces provides a broad and interdisciplinary attraction in terms of electrochemistry, photochemistry, catalysts, energy storage, and electronics because of the large interfacial capacitance coupling and its ability for high-density charge

  17. Structural, vibrational and electrical properties of ordered double perovskite oxide BaLaMnSbO6

    International Nuclear Information System (INIS)

    Bharti, Chandrahas; Sen, A.; Chanda, Sadhan; Sinha, T.P.

    2014-01-01

    Graphical abstract: Raman spectrum with group theoretical analysis -- Highlights: • BaLaMnSbO 6 (BLMS) is synthesized in tetragonal phase (TP). • Rietveld refinement and Raman spectroscopy confirms the TP. • The presence of cation ordering is observed. • The electrical activation energy is ∼0.5 eV. • BLMS shows polaron hopping. -- Abstract: BaLaMnSbO 6 (BLMS) has been successfully synthesized by solid-state reaction technique. In contrast to earlier reports, Rietveld refinement of powder X-ray diffraction (XRD) data of BLMS shows tetragonal structure having space group I4/m. The octahedral tilt about the direction of the c-axis is found to be 8.99° and the superlattice line (0 1 1) indicates the presence of cation ordering. FT-IR and Raman analysis as well as group theoretical investigation confirm the ordered tetragonal structure of BLMS with I4/m space group. The anti-phase distortions appear to be sufficiently large as detected by infrared and Raman spectroscopies, which give rise to the degeneracy and breaking of the symmetries of the normal modes. Impedance spectroscopy is used to investigate the dielectric relaxation and ac electrical conductivity in the temperature range of 303–403 K and in the frequency range of 0.1 kHz–1 MHz. Experimental electric modulus data are fitted to the Cole–Cole model in order to analyse the dielectric relaxation in BLMS. The frequency dependence ac electrical conductivity data are fitted to Jonscher’s universal power law at various temperatures. The dc conductivity follows Arrhenius law with activation energy (E a ) 0.51 eV suggesting the polaron hopping. The complex impedance plane plots of BLMS indicate the presence of both grain and grain boundary effects and are analyzed by the electrical equivalent circuit consisting of a resistance and capacitance

  18. Structural, vibrational and electrical properties of ordered double perovskite oxide BaLaMnSbO{sub 6}

    Energy Technology Data Exchange (ETDEWEB)

    Bharti, Chandrahas, E-mail: bhartic@cgcri.res.in [Sensor and Actuator Division, CSIR-Central Glass and Ceramic Research Institute, 196, Raja SC Mullick Road, Kolkata 700032 (India); Sen, A. [Sensor and Actuator Division, CSIR-Central Glass and Ceramic Research Institute, 196, Raja SC Mullick Road, Kolkata 700032 (India); Chanda, Sadhan; Sinha, T.P. [Department of Physics, Bose Institute, 93/1, Acharya Prafulla Chandra Road, Kolkata 700009 (India)

    2014-03-25

    Graphical abstract: Raman spectrum with group theoretical analysis -- Highlights: • BaLaMnSbO{sub 6} (BLMS) is synthesized in tetragonal phase (TP). • Rietveld refinement and Raman spectroscopy confirms the TP. • The presence of cation ordering is observed. • The electrical activation energy is ∼0.5 eV. • BLMS shows polaron hopping. -- Abstract: BaLaMnSbO{sub 6} (BLMS) has been successfully synthesized by solid-state reaction technique. In contrast to earlier reports, Rietveld refinement of powder X-ray diffraction (XRD) data of BLMS shows tetragonal structure having space group I4/m. The octahedral tilt about the direction of the c-axis is found to be 8.99° and the superlattice line (0 1 1) indicates the presence of cation ordering. FT-IR and Raman analysis as well as group theoretical investigation confirm the ordered tetragonal structure of BLMS with I4/m space group. The anti-phase distortions appear to be sufficiently large as detected by infrared and Raman spectroscopies, which give rise to the degeneracy and breaking of the symmetries of the normal modes. Impedance spectroscopy is used to investigate the dielectric relaxation and ac electrical conductivity in the temperature range of 303–403 K and in the frequency range of 0.1 kHz–1 MHz. Experimental electric modulus data are fitted to the Cole–Cole model in order to analyse the dielectric relaxation in BLMS. The frequency dependence ac electrical conductivity data are fitted to Jonscher’s universal power law at various temperatures. The dc conductivity follows Arrhenius law with activation energy (E{sub a}) 0.51 eV suggesting the polaron hopping. The complex impedance plane plots of BLMS indicate the presence of both grain and grain boundary effects and are analyzed by the electrical equivalent circuit consisting of a resistance and capacitance.

  19. Electrical and optical properties of reactive dc magnetron sputtered silver-doped indium oxide thin films: role of oxygen

    International Nuclear Information System (INIS)

    Subrahmanyam, A.; Barik, U.K.

    2006-01-01

    Silver-doped indium oxide thin films have been prepared on glass and quartz substrates at room temperature (300 K) by a reactive dc magnetron sputtering technique using an alloy target of pure indium and silver (80:20 at. %). During sputtering, the oxygen flow rates are varied in the range 0.00-2.86 sccm keeping the magnetron power constant at 40 W. The resistivity of these films is in the range 10 0 -10 -3 Ωcm and they show a negative temperature coefficient of resistivity. The films exhibit p-type conductivity at an oxygen flow rate of 1.71 sccm. The work function of these silver-indium oxide films has been measured by a Kelvin probe technique. The refractive index of the films (at 632.8 nm) varies in the range 1.13-1.20. Silver doping in indium oxide narrows the band gap of indium oxide (3.75 eV). (orig.)

  20. Electrical and optical properties of reactive dc magnetron sputtered silver-doped indium oxide thin films: role of oxygen

    Energy Technology Data Exchange (ETDEWEB)

    Subrahmanyam, A; Barik, U K [Indian Institute of Technology Madras, Semiconductor Physics Laboratory, Department of Physics, Chennai (India)

    2006-07-15

    Silver-doped indium oxide thin films have been prepared on glass and quartz substrates at room temperature (300 K) by a reactive dc magnetron sputtering technique using an alloy target of pure indium and silver (80:20 at. %). During sputtering, the oxygen flow rates are varied in the range 0.00-2.86 sccm keeping the magnetron power constant at 40 W. The resistivity of these films is in the range 10{sup 0}-10{sup -3} {omega}cm and they show a negative temperature coefficient of resistivity. The films exhibit p-type conductivity at an oxygen flow rate of 1.71 sccm. The work function of these silver-indium oxide films has been measured by a Kelvin probe technique. The refractive index of the films (at 632.8 nm) varies in the range 1.13-1.20. Silver doping in indium oxide narrows the band gap of indium oxide (3.75 eV). (orig.)

  1. Empirical study of the metal-nitride-oxide-semiconductor device characteristics deduced from a microscopic model of memory traps

    International Nuclear Information System (INIS)

    Ngai, K.L.; Hsia, Y.

    1982-01-01

    A graded-nitride gate dielectric metal-nitride-oxide-semiconductor (MNOS) memory transistor exhibiting superior device characteristics is presented and analyzed based on a qualitative microscopic model of the memory traps. The model is further reviewed to interpret some generic properties of the MNOS memory transistors including memory window, erase-write speed, and the retention-endurance characteristic features

  2. Solid-state supercapacitors with ionic liquid gel polymer electrolyte based on poly (3, 4-ethylenedioxythiophene), carbon nanotubes, and metal oxides nanocomposites for electrical energy storage

    Science.gov (United States)

    Obeidat, Amr M.

    Clean and renewable energy systems have emerged as an important area of research having diverse and significant new applications. These systems utilize different energy storage methods such as the batteries and supercapacitors. Supercapacitors are electrochemical energy storage devices that are designed to bridge the gap between batteries and conventional capacitors. Supercapacitors which store electrical energy by electrical double layer capacitance are based on large surface area structured carbons. The materials systems in which the Faradaic reversible redox reactions store electrical energy are the transition metal oxides and electronically conducting polymers. Among the different types of conducting polymers, poly (3, 4- ethylenedioxythiophene) (PEDOT) is extensively investigated owing to its chemical and mechanical stability. Due to instability of aqueous electrolytes at high voltages and toxicity of organic electrolytes, potential of supercapacitors has not been fully exploited. A novel aspect of this work is in utilizing the ionic liquid gel polymer electrolyte to design solid-state supercapacitors for energy storage. Various electrochemical systems were investigated including graphene, PEDOT, PEDOT-carbon nanotubes, PEDOT-manganese oxide, and PEDOT-iron oxide nanocomposites. The electrochemical performance of solid-state supercapacitor devices was evaluated based on cyclic voltammetry (CV), charge-discharge (CD), prolonged cyclic tests, and electrochemical impedance spectroscopy (EIS) techniques. Raman spectroscopy technique was also utilized to analyze the bonding structure of the electrode materials. The graphene solid-state supercapacitor system displayed areal capacitance density of 141.83 mF cm-2 based on high potential window up to 4V. The PEDOT solid-state supercapacitor system was synthesized in acetonitrile and aqueous mediums achieving areal capacitance density of 219.17 mF cm-2. The hybrid structure of solid-state supercapacitors was also

  3. Influence of the incorporation of titanium dioxide (TiO{sub 2}) on the morphological, structural and electrical properties of Graphene oxide (GO) thin films

    Energy Technology Data Exchange (ETDEWEB)

    Viana Junior, Emilson Ribeiro; Wegher, Gustavo; Deus, Jeferson Ferreira de, E-mail: emilsonjunior@utfpr.edu.br [Universidade Tecnologica Federal do Parana (UFTPR), Curitiba (Brazil)

    2016-07-01

    Full text: Carbon based nanostructures, as Carbon Nanotubes (CNT), Graphene (G) and Graphene Oxide (GO) have been extensively studied in the last years due to their unique electrical and optical properties. Recent research show that graphene can be used to improve the dispersion and stabilization of metal and metal-oxide nanostructures. Titanium dioxide (TiO{sub 2}) has been studied due to its non-toxicity, chemical stability and optoelectronic properties. However, the recombination of photoinduced electrons and holes limits its use on optoelectronic devices. To improve the charge separation efficiency of TiO{sub 2}, much effort has been focused on TiO{sub 2} nanocomposites. In this work, thin films devices of GO and Graphene Oxide with TiO{sub 2} (GO-TiO{sub 2}) were prepared using an alternative chemical route based on the Hummer’s method. The morphology and crystalline structure of the GO and GO with TiO{sub 2} thin films was investigated by X-ray power diffraction (XRD) and scanning electron microscopy (SEM). Was found that the anatase TiO{sub 2} TF were incorporated on the GO structure. Ultraviolet-visible spectroscopy (UV-vis) and Fourier transform infrared spectroscopy (FTIR) were also performed in order to corroborate with the results of XRD and SEM obtained. The electrical characterization of the GO and GO-TiO{sub 2} TF were performed using the four-probe van der Pauw method. The resistivity, density and the mobility of the carriers in the TFs were determined as a function of temperature. It was found that the electrical resistivity, the concentration of the free-carriers, the activation energy, and the capacitance of the device decrease due to the incorporation of TiO{sub 2} on GO, but the mobility increases. Due to low values of the activation energy the density of carriers thermally induced was high enough that lead to a metal-to insulator transition near room temperature. The ratio TiO{sub 2}:GO will be studied, in order to provide the best

  4. Enhanced Electrical Resistivity after Rapid Cool of the Specimen in Layered Oxide LixCoO2

    Science.gov (United States)

    Miyoshi, K.; Manami, K.; Takeuchi, J.; Sasai, R.; Nishigori, S.

    Measurements of electrical resistivity and DC magnetization for LixCoO2 (x=0.71 and 0.64) have been performed using single crystal specimens. It has been found that electrical resistivity measured after rapid cool of the specimen becomes larger compared with that after slow cool below the temperature TS∽155 K at which charge ordering of Co3+/Co4+(=2:1) occurs. The behavior can be understood considering that the charge ordering can be destroyed by Li ions which are in an amorphous state after rapid cool via the interlayer Coulomb interactions, and also that the disordered Co3+/Co4+ state becomes insulating, while the charge ordered state has a metallic electronic structure, as recently revealed by the scanning tunneling microscopy.

  5. Electrically conducting oxide buffer layers on biaxially textured nickel alloy tapes by reel-to-reel MOCVD process

    International Nuclear Information System (INIS)

    Stadel, O; Samoilenkov, S V; Muydinov, R Yu; Schmidt, J; Keune, H; Wahl, G; Gorbenko, O Yu; Korsakov, I E; Melnikov, O V; Kaul, A R

    2006-01-01

    Reel-to-reel MOCVD process for continuous growth of electrically conducting buffer layers on biaxially textured Ni5W tapes has been developed. The new buffer layer architechture is presented: 200 nm (La, Ba) 2 CuO 4 /40 nm (La, Ba)MnO 3 /Ni5W. Constituting layers with high structural quality have been grown on moving tapes (in plane FWHM ≤ 6 0 and out of plane FWHM ≤ 3 0 )

  6. The electric dipole moments in the ground states of gold oxide, AuO, and gold sulfide, AuS.

    Science.gov (United States)

    Zhang, Ruohan; Yu, Yuanqin; Steimle, Timothy C; Cheng, Lan

    2017-02-14

    The B 2 Σ - - X 2 Π 3/2 (0,0) bands of a cold molecular beam sample of gold monoxide, AuO, and gold monosulfide, AuS, have been recorded at high resolution both field free and in the presence of a static electric field. The observed electric field induced splittings and shifts were analyzed to produce permanent electric dipole moments, μ→ el , of 2.94±0.06 D and 2.22±0.05 D for the X 2 Π 3/2 (v = 0) states of AuO and AuS, respectively. A molecular orbital correlation diagram is used to rationalize the trend in ground state μ→ el values for AuX (X = F, Cl, O, and S) molecules. The experimentally determined μ→ el are compared to those computed at the coupled-cluster singles and doubles (CCSD) level augmented with a perturbative inclusion of triple excitations (CCSD(T)) level of theory.

  7. Indium-tin oxide thin films deposited at room temperature on glass and PET substrates: Optical and electrical properties variation with the H2-Ar sputtering gas mixture

    Science.gov (United States)

    Álvarez-Fraga, L.; Jiménez-Villacorta, F.; Sánchez-Marcos, J.; de Andrés, A.; Prieto, C.

    2015-07-01

    The optical and electrical properties of indium tin oxide (ITO) films deposited at room temperature on glass and polyethylene terephthalate (PET) substrates were investigated. A clear evolution of optical transparency and sheet resistance with the content of H2 in the gas mixture of H2 and Ar during magnetron sputtering deposition is observed. An optimized performance of the transparent conductive properties ITO films on PET was achieved for samples prepared using H2/(Ar + H2) ratio in the range of 0.3-0.6%. Moreover, flexible ITO-PET samples show a better transparent conductive figure of merit, ΦTC = T10/RS, than their glass counterparts. These results provide valuable insight into the room temperature fabrication and development of transparent conductive ITO-based flexible devices.

  8. Teflon/SiO2 Bilayer Passivation for Improving the Electrical Reliability of Oxide TFTs Fabricated Using a New Two-Photomask Self-Alignment Process

    Science.gov (United States)

    Fan, Ching-Lin; Shang, Ming-Chi; Li, Bo-Jyun; Lin, Yu-Zuo; Wang, Shea-Jue; Lee, Win-Der; Hung, Bohr-Ran

    2015-01-01

    This study proposes a two-photomask process for fabricating amorphous indium–gallium–zinc oxide (a-IGZO) thin-film transistors (TFTs) that exhibit a self-aligned structure. The fabricated TFTs, which lack etching-stop (ES) layers, have undamaged a-IGZO active layers that facilitate superior performance. In addition, we demonstrate a bilayer passivation method that uses a polytetrafluoroethylene (Teflon) and SiO2 combination layer for improving the electrical reliability of the fabricated TFTs. Teflon was deposited as a buffer layer through thermal evaporation. The Teflon layer exhibited favorable compatibility with the underlying IGZO channel layer and effectively protected the a-IGZO TFTs from plasma damage during SiO2 deposition, resulting in a negligible initial performance drop in the a-IGZO TFTs. Compared with passivation-free a-IGZO TFTs, passivated TFTs exhibited superior stability even after 168 h of aging under ambient air at 95% relative humidity. PMID:28788026

  9. Teflon/SiO₂ Bilayer Passivation for Improving the Electrical Reliability of Oxide TFTs Fabricated Using a New Two-Photomask Self-Alignment Process.

    Science.gov (United States)

    Fan, Ching-Lin; Shang, Ming-Chi; Li, Bo-Jyun; Lin, Yu-Zuo; Wang, Shea-Jue; Lee, Win-Der; Hung, Bohr-Ran

    2015-04-13

    This study proposes a two-photomask process for fabricating amorphous indium-gallium-zinc oxide (a-IGZO) thin-film transistors (TFTs) that exhibit a self-aligned structure. The fabricated TFTs, which lack etching-stop (ES) layers, have undamaged a-IGZO active layers that facilitate superior performance. In addition, we demonstrate a bilayer passivation method that uses a polytetrafluoroethylene (Teflon) and SiO₂ combination layer for improving the electrical reliability of the fabricated TFTs. Teflon was deposited as a buffer layer through thermal evaporation. The Teflon layer exhibited favorable compatibility with the underlying IGZO channel layer and effectively protected the a-IGZO TFTs from plasma damage during SiO₂ deposition, resulting in a negligible initial performance drop in the a-IGZO TFTs. Compared with passivation-free a-IGZO TFTs, passivated TFTs exhibited superior stability even after 168 h of aging under ambient air at 95% relative humidity.

  10. Teflon/SiO2 Bilayer Passivation for Improving the Electrical Reliability of Oxide TFTs Fabricated Using a New Two-Photomask Self-Alignment Process

    Directory of Open Access Journals (Sweden)

    Ching-Lin Fan

    2015-04-01

    Full Text Available This study proposes a two-photomask process for fabricating amorphous indium–gallium–zinc oxide (a-IGZO thin-film transistors (TFTs that exhibit a self-aligned structure. The fabricated TFTs, which lack etching-stop (ES layers, have undamaged a-IGZO active layers that facilitate superior performance. In addition, we demonstrate a bilayer passivation method that uses a polytetrafluoroethylene (Teflon and SiO2 combination layer for improving the electrical reliability of the fabricated TFTs. Teflon was deposited as a buffer layer through thermal evaporation. The Teflon layer exhibited favorable compatibility with the underlying IGZO channel layer and effectively protected the a-IGZO TFTs from plasma damage during SiO2 deposition, resulting in a negligible initial performance drop in the a-IGZO TFTs. Compared with passivation-free a-IGZO TFTs, passivated TFTs exhibited superior stability even after 168 h of aging under ambient air at 95% relative humidity.

  11. Preparation of porous carbon spheres from 2-keto-l-gulonic acid mother liquor by oxidation and activation for electric double-layer capacitor application.

    Science.gov (United States)

    Hao, Zhi-Qiang; Cao, Jing-Pei; Zhao, Xiao-Yan; Wu, Yan; Zhu, Jun-Sheng; Dang, Ya-Li; Zhuang, Qi-Qi; Wei, Xian-Yong

    2018-03-01

    A novel strategy is proposed for the increase of specific surface area (SSA) of porous carbon sphere (PCS) by oxidation and activation. 2-keto-l-gulonic acid mother liquor (GAML) as a high-pollution waste has a relatively high value of reutilization. For its high value-added utilization, GAML is used as the precursor for preparation of PCS as carbon-based electrode materials for electric double-layer capacitor. PCS is prepared by hydrothermal carbonization, carbonization and KOH activation, and Fe(NO 3 ) 3 9H 2 O is used as an oxidizing agent during carbonization. The as-prepared PCS has excellent porosity and high SSA of 2478 m 2  g -1 . Meanwhile, the pore structure of PCS can be controlled by the adjustment of carbonization parameters (carbonization temperature and the loading of Fe(NO 3 ) 3 9H 2 O). Besides, the SSA and specific capacitance of PCS can be increased remarkably when Fe(NO 3 ) 3 9H 2 O is added in carbonization. The specific capacitance of PCS can reach 303.7 F g -1 at 40 mA g -1 . PCSs as electrode material have superior electrochemical stability. After 8000 cycles, the capacitance retention is 98.3% at 2 A g -1 . The electric double-layer capacitance of PCS is improved when CS is carbonized with Fe(NO 3 ) 3 9H 2 O, and the economic and environmental benefits are achieved by the effective recycle of GAML. Copyright © 2017 Elsevier Inc. All rights reserved.

  12. All printed transparent electrodes through an electrical switching mechanism: A convincing alternative to indium-tin-oxide, silver and vacuum

    DEFF Research Database (Denmark)

    Larsen-Olsen, Thue Trofod; Søndergaard, Roar; Norrman, Kion

    2012-01-01

    Here we show polymer solar cells manufactured using only printing and coating of abundant materials directly on flexible plastic substrates or barrier foil using only roll-to-roll methods. Central to the development is a particular roll-to-roll compatible post-processing step that converts...... the pristine and non-functional multilayer-coated stack into a functional solar cell through formation of a charge selective interface, in situ, following a short electrical pulse with a high current density. After the fast post-processing step the device stack becomes active and all devices are functional...

  13. Nuclear spin Hall and Klein tunneling effects during oxidation with electric and magnetic field inductions in graphene.

    Science.gov (United States)

    Little, Reginald B; McClary, Felicia; Rice, Bria; Jackman, Corine; Mitchell, James W

    2012-12-14

    The recent observation of the explosive oxidation of graphene with enhancement for decreasing temperature and the requirements for synchronizing oxidants for collective oxidation-reduction (redox) reactions presented a chemical scenario for the thermal harvesting by the magnetic spin Hall Effect. More experimental data are presented to demonstrate such spin Hall Effect by determining the influence of spins of so-called spectator fermionic cations. Furthermore, the so-called spectator bosonic cations are discovered to cause a Klein tunneling effect during the redox reaction of graphene. The Na(+) and K(+), fermionic cations and the Mg(2+) and Ca(2+), bosonic cations were observed and compared under a variety of experimental conditions: adiabatic reactions with initial temperatures (18-22 °C); reactions toward infinite dilution; isothermal reactions under nonadiabatic conditions at low temperature of 18 °C; reactions under paramagnetic O(2) or diamagnetic N(2) atmospheres of different permeabilities; reactions in applied and no applied external magnetic field; and reactions toward excess concentrations of common and uncommon Na(+) and Mg(2+) cations. The observed reaction kinetics and dynamics under these various, diverse conditions are consistent with the spin Hall mechanism, energy harvesting and short time violation of Second Law of Thermodynamics for redox reactions of graphene by the Na(+)K(+) mixture and are consistent with the Klein tunnel mechanism for the redox reactions of graphene by the Mg(2+)Ca(2+) mixture. Mixed spin Hall and Klein tunnel mechanisms are discovered to slow and modulate explosive redox reactions. Such spin Hall Effect also gives explanation of recent tunneling of electrons through boron nitride.

  14. Enhanced strain-dependent electrical resistance of polyurethane composites with embedded oxidized multi-walled carbon nanotube networks

    Czech Academy of Sciences Publication Activity Database

    Benlikaya, R.; Slobodian, P.; Říha, Pavel

    2013-01-01

    Roč. 2013, Fall (2013) ISSN 1687-4110 Grant - others:GA MŠk(CZ) ED2.1.00/03.0111; GA MŠk(CZ) EE.2.3.20.0104; TBU Zlin(CZ) IGA/FT/2013/018 Institutional research plan: CEZ:AV0Z20600510 Institutional support: RVO:67985874 Keywords : carbon nanotubes * oxidation * strain sensor * gauge factor * polyurethane Subject RIV: BK - Fluid Dynamics Impact factor: 1.611, year: 2013 http://www.hindawi.com/journals/jnm/2013/327597/

  15. Magnetic ordering and electrical resistivity in Co{sub 0.2}Zn{sub 0.8}Fe{sub 2}O{sub 4} spinel oxide

    Energy Technology Data Exchange (ETDEWEB)

    Bhowmik, R.N. [Experimental Condensed Matter Physics Division, Saha Institute of Nuclear Physics, 1/AF, Bidhannagar, Kolkata 700065 (India)], E-mail: rabindranath.bhowmik@saha.ac.in; Ranganathan, R. [Experimental Condensed Matter Physics Division, Saha Institute of Nuclear Physics, 1/AF, Bidhannagar, Kolkata 700065 (India); Ghosh, B.; Kumar, S. [Department of Physics, Jadavpur University, Kolkata 700 032 (India); Chattopadhyay, S. [Department of Physics, University of Calcutta, 92, A.P.C. Road, Kolkata 700009 (India)

    2008-05-29

    We report the magnetic, Moessbauer spectroscopy and resistivity measurements in order to understand the electronic behaviour of bulk Co{sub 0.2}Zn{sub 0.8}Fe{sub 2}O{sub 4} spinel oxide. The effect of magnetic order on electrical behaviour is observed from the resistivity measurements in the absence and presence of magnetic field. The analysis of Moessbauer spectra suggests the absence of Fe{sup 2+} ions in the system, which implies that complete hopping of charge carriers between localized Fe{sup 3+}/Co{sup 2+} and Fe{sup 2+}/Co{sup 3+} pair of ions in B sublattice is not the favourable mechanism in Co{sub 0.2}Zn{sub 0.8}Fe{sub 2}O{sub 4}. We suggest that electrical behaviour of the present sample may be consistent with a model of fractional charge transfer via Fe{sub B}{sup 3+}-O{sup 2-}-Co{sub B}{sup 2+} superexchange path.

  16. The influence of reduced graphene oxide on electrical conductivity of LiFePO{sub 4}-based composite as cathode material

    Energy Technology Data Exchange (ETDEWEB)

    Arifin, Muhammad; Aimon, Akfiny Hasdi; Winata, Toto; Abdullah, Mikrajuddin [Physics of Electronic Materials Research Division, Department of Physics, Institut Teknologi Bandung, Bandung 40132 Indonesia (Indonesia); Iskandar, Ferry, E-mail: ferry@fi.itb.ac.id [Physics of Electronic Materials Research Division, Department of Physics, Institut Teknologi Bandung, Bandung 40132 Indonesia (Indonesia); Research Center for Nanoscience and Nanotechnology Institut Teknologi Bandung, Bandung 40132 Indonesia (Indonesia)

    2016-02-08

    LiFePO{sub 4} is fascinating cathode active materials for Li-ion batteries application because of their high electrochemical performance such as a stable voltage at 3.45 V and high specific capacity at 170 mAh.g{sup −1}. However, their low intrinsic electronic conductivity and low ionic diffusion are still the hindrance for their further application on Li-ion batteries. Therefore, the efforts to improve their conductivity are very important to elevate their prospecting application as cathode materials. Herein, we reported preparation of additional of reduced Graphene Oxide (rGO) into LiFePO{sub 4}-based composite via hydrothermal method and the influence of rGO on electrical conductivity of LiFePO{sub 4}−based composite by varying mass of rGO in composition. Vibration of LiFePO{sub 4}-based composite was detected on Fourier Transform Infrared Spectroscopy (FTIR) spectra, while single phase of LiFePO{sub 4} nanocrystal was observed on X-Ray Diffraction (XRD) pattern, it furthermore, Scanning Electron Microscopy (SEM) images showed that rGO was distributed around LiFePO4-based composite. Finally, the 4-point probe measurement result confirmed that the optimum electrical conductivity is in additional 2 wt% rGO for range 1 to 2 wt% rGO.

  17. Optimization of the optical and electrical properties of electron beam evaporated aluminum-doped zinc oxide films for opto-electronic applications

    Science.gov (United States)

    Ali, H. M.; Abd El-Raheem, M. M.; Megahed, N. M.; Mohamed, H. A.

    2006-08-01

    Aluminum-doped zinc oxide (AZO) thin films have been deposited by electron beam evaporation technique on glass substrates. The structural, electrical and optical properties of AZO films have been investigated as a function of annealing temperature. It was observed that the optical properties such as transmittance, reflectance, optical band gap and refractive index of AZO films were strongly affected by annealing temperature. The transmittance values of 84% in the visible region and 97% in the NIR region were obtained for AZO film annealed at 475 °C. The room temperature electrical resistivity of 4.6×10-3 Ω cm has been obtained at the same temperature of annealing. It was found that the calculated refractive index has been affected by the packing density of the thin films, whereas, the high annealing temperature gave rise to improve the homogeneity of the films. The single-oscillator model was used to analyze the optical parameters such as the oscillator and dispersion energies.

  18. Electrical Performance and Reliability Improvement of Amorphous-Indium-Gallium-Zinc-Oxide Thin-Film Transistors with HfO2 Gate Dielectrics by CF4 Plasma Treatment

    Science.gov (United States)

    Fan, Ching-Lin; Tseng, Fan-Ping; Tseng, Chiao-Yuan

    2018-01-01

    In this work, amorphous indium-gallium-zinc oxide thin-film transistors (a-IGZO TFTs) with a HfO2 gate insulator and CF4 plasma treatment was demonstrated for the first time. Through the plasma treatment, both the electrical performance and reliability of the a-IGZO TFT with HfO2 gate dielectric were improved. The carrier mobility significantly increased by 80.8%, from 30.2 cm2/V∙s (without treatment) to 54.6 cm2/V∙s (with CF4 plasma treatment), which is due to the incorporated fluorine not only providing an extra electron to the IGZO, but also passivating the interface trap density. In addition, the reliability of the a-IGZO TFT with HfO2 gate dielectric has also been improved by the CF4 plasma treatment. By applying the CF4 plasma treatment to the a-IGZO TFT, the hysteresis effect of the device has been improved and the device’s immunity against moisture from the ambient atmosphere has been enhanced. It is believed that the CF4 plasma treatment not only significantly improves the electrical performance of a-IGZO TFT with HfO2 gate dielectric, but also enhances the device’s reliability. PMID:29772767

  19. Electrical Performance and Reliability Improvement of Amorphous-Indium-Gallium-Zinc-Oxide Thin-Film Transistors with HfO2 Gate Dielectrics by CF4 Plasma Treatment

    Directory of Open Access Journals (Sweden)

    Ching-Lin Fan

    2018-05-01

    Full Text Available In this work, amorphous indium-gallium-zinc oxide thin-film transistors (a-IGZO TFTs with a HfO2 gate insulator and CF4 plasma treatment was demonstrated for the first time. Through the plasma treatment, both the electrical performance and reliability of the a-IGZO TFT with HfO2 gate dielectric were improved. The carrier mobility significantly increased by 80.8%, from 30.2 cm2/V∙s (without treatment to 54.6 cm2/V∙s (with CF4 plasma treatment, which is due to the incorporated fluorine not only providing an extra electron to the IGZO, but also passivating the interface trap density. In addition, the reliability of the a-IGZO TFT with HfO2 gate dielectric has also been improved by the CF4 plasma treatment. By applying the CF4 plasma treatment to the a-IGZO TFT, the hysteresis effect of the device has been improved and the device’s immunity against moisture from the ambient atmosphere has been enhanced. It is believed that the CF4 plasma treatment not only significantly improves the electrical performance of a-IGZO TFT with HfO2 gate dielectric, but also enhances the device’s reliability.

  20. Electrical Performance and Reliability Improvement of Amorphous-Indium-Gallium-Zinc-Oxide Thin-Film Transistors with HfO₂ Gate Dielectrics by CF₄ Plasma Treatment.

    Science.gov (United States)

    Fan, Ching-Lin; Tseng, Fan-Ping; Tseng, Chiao-Yuan

    2018-05-17

    In this work, amorphous indium-gallium-zinc oxide thin-film transistors (a-IGZO TFTs) with a HfO₂ gate insulator and CF₄ plasma treatment was demonstrated for the first time. Through the plasma treatment, both the electrical performance and reliability of the a-IGZO TFT with HfO₂ gate dielectric were improved. The carrier mobility significantly increased by 80.8%, from 30.2 cm²/V∙s (without treatment) to 54.6 cm²/V∙s (with CF₄ plasma treatment), which is due to the incorporated fluorine not only providing an extra electron to the IGZO, but also passivating the interface trap density. In addition, the reliability of the a-IGZO TFT with HfO₂ gate dielectric has also been improved by the CF₄ plasma treatment. By applying the CF₄ plasma treatment to the a-IGZO TFT, the hysteresis effect of the device has been improved and the device's immunity against moisture from the ambient atmosphere has been enhanced. It is believed that the CF₄ plasma treatment not only significantly improves the electrical performance of a-IGZO TFT with HfO₂ gate dielectric, but also enhances the device's reliability.

  1. Boron cross-linked graphene oxide/polyvinyl alcohol nanocomposite gel electrolyte for flexible solid-state electric double layer capacitor with high performance

    International Nuclear Information System (INIS)

    Huang, Yi-Fu; Wu, Peng-Fei; Zhang, Ming-Qiu; Ruan, Wen-Hong; Giannelis, Emmanuel P.

    2014-01-01

    Highlights: • Gel electrolyte is prepared and used in electric double layer capacitor. • Insertion of boron crosslinks into GO agglomerates opens channels for ion migration. • Solid supercapacitors show excellent specific capacitance and cycle stability. • Nanocomposite electrolyte shows better thermal stability and mechanical properties. - Abstract: A new family of boron cross-linked graphene oxide/polyvinyl alcohol (GO-B-PVA) nanocomposite gels is prepared by freeze-thaw/boron cross-linking method. Then the gel electrolytes saturated with KOH solution are assembled into electric double layer capacitors (EDLCs). Structure, thermal and mechanical properties of GO-B-PVA are explored. The electrochemical properties of EDLCs using GO-B-PVA/KOH are investigated, and compared with those using GO-PVA/KOH gel or KOH solution electrolyte. FTIR shows that boron cross-links are introduced into GO-PVA, while the boronic structure inserted into agglomerated GO sheets is demonstrated by DMA analysis. The synergy effect of the GO and the boron crosslinking benefits for ionic conductivity due to unblocking ion channels, and for improvement of thermal stability and mechanical properties of the electrolytes. Higher specific capacitance and better cycle stability of EDLCs are obtained by using the GO-B-PVA/KOH electrolyte, especially the one at higher GO content. The nanocomposite gel electrolytes with excellent electrochemical properties and solid-like character are candidates for the industrial application in high-performance flexible solid-state EDLCs

  2. Thermal Effect on the Structural, Electrical, and Optical Properties of In-Line Sputtered Aluminum Doped Zinc Oxide Films Explored with Thermal Desorption Spectroscopy

    Directory of Open Access Journals (Sweden)

    Shang-Chou Chang

    2014-01-01

    Full Text Available This work investigates the thermal effect on the structural, electrical, and optical properties of aluminum doped zinc oxide (AZO films. The AZO films deposited at different temperatures were measured using a thermal desorption system to obtain their corresponding thermal desorption spectroscopy (TDS. In addition to obtaining information of thermal desorption, the measurement of TDS also has the effect of vacuum annealing on the AZO films. The results of measuring TDS imply part of the doped aluminum atoms do not stay at substituted zinc sites in AZO films. The (002 preferential direction of the AZO films in X-ray diffraction spectra shifts to a lower angle after measurement of TDS. The grain size grows and surface becomes denser for all AZO films after measurement of TDS. The carrier concentration, mobility, and average optical transmittance increase while the electrical resistivity decreases for AZO films after measurement of TDS. These results indicate that the AZO films deposited at 200°C are appropriate selections if the AZO films are applied in device fabrication of heat-produced process.

  3. New structural and electrical data on Bi-Mo mixed oxides with a structure based on [Bi12O14]∞ columns

    International Nuclear Information System (INIS)

    Vannier, R.N.; Abraham, F.; Nowogrocki, G.; Mairesse, G.

    1999-01-01

    The authors recently described a new family of oxide anion conductors with a structure based on [Bi 12 O 14 ] ∞ columns (Journal of Solid State Chemistry 122, 394 (1996)). The parent compound of this series can be formulated as Bi 26 Mo 10 O 69 and formation of a solid solution, in the Bi 2 O 3 -MoO 3 binary system, in the range 2.57 ≤ Bi/Mo ≤ 2.77 was established. The stoichiometry of this series was questioned by R. Enjalbert et al. (Journal of Solid State Chemistry 131, 236 (1997)), but confirmed by D.J. Buttrey et al. (Materials Research Bulletin 32, 947 (1997)). The first part of this paper is devoted to a refutation of criticisms by R. Enjalbert et al. In the second part, a comparison with other Bi 2 O 3 -based oxide anion conductors enables the authors to propose an iono-covalent description of this novel structure type, taking into account all the structural and electrical features, especially new neutron powder diffraction refinement and conductivity measurements under variable oxygen partial pressures

  4. Electrical characterization of 4H-SiC metal-oxide-semiconductor structure with Al2O3 stacking layers as dielectric

    Science.gov (United States)

    Chang, P. K.; Hwu, J. G.

    2018-02-01

    Interface defects and oxide bulk traps conventionally play important roles in the electrical performance of SiC MOS device. Introducing the Al2O3 stack grown by repeated anodization of Al films can notably lower the leakage current in comparison to the SiO2 structure, and enhance the minority carrier response at low frequency when the number of Al2O3 layers increase. In addition, the interface quality is not deteriorated by the stacking of Al2O3 layers because the stacked Al2O3 structure grown by anodization possesses good uniformity. In this work, the capacitance equivalent thickness (CET) of stacking Al2O3 will be up to 19.5 nm and the oxidation process can be carried out at room temperature. For the Al2O3 gate stack with CET 19.5 nm on n-SiC substrate, the leakage current at 2 V is 2.76 × 10-10 A/cm2, the interface trap density at the flatband voltage is 3.01 × 1011 eV-1 cm-2, and the effective breakdown field is 11.8 MV/cm. Frequency dispersion and breakdown characteristics may thus be improved as a result of the reduction in trap density. The Al2O3 stacking layers are capable of maintaining the leakage current as low as possible even after constant voltage stress test, which will further ameliorate reliability characteristics.

  5. A novel polygeneration process to co-produce ethylene and electricity from shale gas with zero CO2 emissions via methane oxidative coupling

    International Nuclear Information System (INIS)

    Khojasteh Salkuyeh, Yaser; Adams, Thomas A.

    2015-01-01

    Highlights: • Development of an ethylene plant from shale gases with zero CO 2 emissions. • Oxidative coupling of methane is used for the conversion of gas to ethylene. • Polygeneration strategy is used to improve the profitability of plant. - Abstract: A techno-economic analysis of a novel process to co-produce ethylene and electricity using a recently developed methane oxidative coupling catalyst is presented. Several design variants are considered, featuring the use of traditional gas turbines, chemical looping combustion, and 100% carbon dioxide capture. Mass and energy balance simulations were carried out using Aspen Plus simulations, and particle swarm optimization was used to determine the optimal process design under a variety of market scenarios. A custom model for the gas turbine section was used to ensure that the negative impacts of various cooling strategies were factored into the analysis. The results show that by synergistically co-producing power and ethylene using this catalyst, ethylene can be produced at costs close to traditional steam cracking methods with nearly zero carbon dioxide emissions, even when factoring in the relatively poor conversion and selectivity of the chosen catalyst

  6. Control of magnetism by electrical charge doping or redox reactions in a surface-oxidized Co thin film with a solid-state capacitor structure

    Science.gov (United States)

    Hirai, T.; Koyama, T.; Chiba, D.

    2018-03-01

    We have investigated the electric field (EF) effect on magnetism in a Co thin film with a naturally oxidized surface. The EF was applied to the oxidized Co surface through a gate insulator layer made of HfO2, which was formed using atomic layer deposition (ALD). The efficiency of the EF effect on the magnetic anisotropy in the sample with the HfO2 layer deposited at the appropriate temperature for the ALD process was relatively large compared to the previously reported values with an unoxidized Co film. The coercivity promptly and reversibly followed the variation in gate voltage. The modulation of the channel resistance was at most ˜0.02%. In contrast, a dramatic change in the magnetic properties including the large change in the saturation magnetic moment and a much larger EF-induced modulation of the channel resistance (˜10%) were observed in the sample with a HfO2 layer deposited at a temperature far below the appropriate temperature range. The response of these properties to the gate voltage was very slow, suggesting that a redox reaction dominated the EF effect on the magnetism in this sample. The frequency response for the capacitive properties was examined to discuss the difference in the mechanism of the EF effect observed here.

  7. Effects of Y incorporation in TaON gate dielectric on electrical performance of GaAs metal-oxide-semiconductor capacitor

    Energy Technology Data Exchange (ETDEWEB)

    Liu, Li Ning; Choi, Hoi Wai; Lai, Pui To [Department of Electrical and Electronic Engineering, The University of Hong Kong (China); Xu, Jing Ping [School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan (China)

    2016-09-15

    In this study, GaAs metal-oxide-semiconductor (MOS) capacitors using Y-incorporated TaON as gate dielectric have been investigated. Experimental results show that the sample with a Y/(Y + Ta) atomic ratio of 27.6% exhibits the best device characteristics: high k value (22.9), low interfacestate density (9.0 x 10{sup 11} cm{sup -2} eV{sup -1}), small flatband voltage (1.05 V), small frequency dispersion and low gate leakage current (1.3 x 10{sup -5}A/cm{sup 2} at V{sub fb} + 1 V). These merits should be attributed to the complementary properties of Y{sub 2}O{sub 3} and Ta{sub 2}O{sub 5}:Y can effectively passivate the large amount of oxygen vacancies in Ta{sub 2}O{sub 5}, while the positively-charged oxygen vacancies in Ta{sub 2}O{sub 5} are capable of neutralizing the effects of the negative oxide charges in Y{sub 2}O{sub 3}. This work demonstrates that an appropriate doping of Y content in TaON gate dielectric can effectively improve the electrical performance for GaAs MOS devices. (copyright 2016 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  8. The effect of substrate temperature on the microstructural, electrical and optical properties of Sn-doped indium oxide thin films

    Science.gov (United States)

    Raoufi, Davood; Taherniya, Atefeh

    2015-06-01

    In this work, Sn doping In2O3 (ITO) thin films with a thickness of 200 nm were deposited on glass substrates by electron beam evaporation (EBE) method at different substrate temperatures. The crystal structure of these films was studied by X-ray diffraction technique. The sheet resistance was measured by a four-point probe. Van der Pauw method was used to measure carrier density and mobility of ITO films. The optical transmittance spectra were recorded in the wavelength region of 300-800 nm. Scanning electron microscope (SEM) has been used for the surface morphology analysis. The prepared ITO films exhibited body-centered cubic (BCC) structure with preferred orientation of growth along the (2 2 2) crystalline plane. The grain size of the films increases by rising the substrate temperature. Transparency of the films, over the visible light region, is increased with increasing the substrate temperature. It is found that the electrical properties of ITO films are significantly affected by substrate temperature. The electrical resistivity decreases with increasing substrate temperature, whereas the carrier density and mobility are enhanced with an increase in substrate temperature. The evaluated values of energy band gap Eg for ITO films were increase from 3.84 eV to 3.91 eV with increasing the substrate temperatures from 200 °C to 500 °C. The SEM micrographs of the films revealed a homogeneous growth without perceptible cracks with particles which are well covered on the substrate.

  9. Effect of aluminum addition on the optical, morphology and electrical behavior of spin coated zinc oxide thin films

    Directory of Open Access Journals (Sweden)

    Amit Kumar Srivastava

    2011-09-01

    Full Text Available Aluminum-doped ZnO thin films of high optical transmittance (∼ 84-100% and low resistivity (∼ 2.3x10-2 Ωcm have been prepared on glass substrate by the spin coating and subsequent annealing at 500°C for 1h in air or vacuum. Effect of aluminum doping and annealing environment on morphology, optical transmittance and electrical resistivity of ZnO thin films has been studied with possible application as a transparent electrode in photovoltaic. The changes occurring due to aluminum addition include reduction in grain size, root mean square roughness, peak-valley separation, and sheet resistance with improvement in the optical transmittance to 84-100% in the visible range. The origin of low electrical resistivity lies in increase in i electron concentration following aluminum doping (being trivalent, formation of oxygen vacancies due to vacuum annealing, filling of cation site with additional zinc at solution stage itself and ii carrier mobility.

  10. Defect Chemistry, Electrical Properties, and Evaluation of New Oxides Sr2 CoNb1-x Tix O6-δ (0≤x≤1) as Cathode Materials for Solid Oxide Fuel Cells.

    Science.gov (United States)

    Azcondo, María Teresa; Yuste, Mercedes; Pérez-Flores, Juan Carlos; Muñoz-Gil, Daniel; García-Martín, Susana; Muñoz-Noval, Alvaro; Orench, Inés Puente; García-Alvarado, Flaviano; Amador, Ulises

    2017-07-21

    The perovskite series Sr 2 CoNb 1-x Ti x O 6-δ (0≤x≤1) was investigated in the full compositional range to assess its potential as cathode material for solid oxide fuel cell (SOFC). The variation of transport properties and thus, the area specific resistances (ASR) are explained by a detailed investigation of the defect chemistry. Increasing the titanium content from x=0-1 produces both oxidation of Co 3+ to Co 4+ (from 0 up to 40 %) and oxygen vacancies (from 6.0 to 5.7 oxygen atom/formula unit), although each charge compensation mechanism predominates in different compositional ranges. Neutron diffraction reveals that samples with high Ti-contents lose a significant amount of oxygen upon heating above 600 K. Oxygen is partially recovered upon cooling as the oxygen release and uptake show noticeably different kinetics. The complex defect chemistry of these compounds, together with the compositional changes upon heating/cooling cycles and atmospheres, produce a complicated behavior of electrical conductivity. Cathodes containing Sr 2 CoTiO 6-δ display low ASR values, 0,13 Ω cm 2 at 973 K, comparable to those of the best compounds reported so far, being a very promising cathode material for SOFC. © 2017 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

  11. Synthesis, microstructural and electrical characterization of ceramic compounds based on strontium and calcium titanates and iron-oxide

    International Nuclear Information System (INIS)

    Carmo, Joao Roberto do

    2011-01-01

    Ca x Sr 1-x Ti 1-y Fe y O 3- δ, X = 0, 0.5 and 1.0, y = 0 and 0.35, ceramic compounds were synthesized by reactive solid state synthesis of CaCO 3 , SrCO 3 , TiO 2 and Fe 2 O 3 , and by the polymeric precursor technique. The ceramic powders were evaluated by thermogravimetry and differential thermal analysis, X-ray diffraction and scanning electron microscopy. Sintered ceramic pellets were analyzed by X-ray diffraction, scanning electron microscopy, scanning probe microscopy and impedance spectroscopy. The electromotive force resulting from the exposing the pellets to partial pressure de oxygen in the ∼50 ppm in the 600-1100 ℃ range was monitored using an experimental setup consisting of an oxygen electrochemical pump with yttria-stabilized zirconia transducer and sensor. Rietveld analysis of the X-ray data allowed for determining the crystalline structures: cubic perovskite (y = 0) and orthorhombic perovskite (y ≠ 0). The electrical conductivity was determined by the two probe impedance spectroscopy measurements in the 5 Hz-13 MHz frequency range from room temperature to approximately 200 ℃. The deconvolution of the [-Z ( ω) x Z'(ω)] impedance diagrams in the 300 < T(K) < 500 range shows two semicircles due to intragranular (bulk) and intergranular (grain boundary) contributions to the electrical resistivity. Sintered pellets using powders prepared by the ceramic route present higher inter- and intragranular resistivity values than pellets prepared with chemically synthesized powders. The emf signal under exposure oxygen shows that these compounds may be used in oxygen sensing devices in the 600 - 1100 ℃ range. Scanning probe microscopy topographic analysis of the polished and thermally etched surfaces of the pellets gave details of grain morphology, showing that pellets prepared with powders synthesized by the chemical route are less porous than the ones obtained by the ceramic route. These results are in agreement with the impedance spectroscopy

  12. Electrical and optical properties of indium tin oxide thin films deposited on unheated substrates by d.c. reactive sputtering

    International Nuclear Information System (INIS)

    Karasawa, T.; Miyata, Y.

    1993-01-01

    Transparent conducting thin films of indium tin oxide (ITO) have been deposited by d.c. reactive planar magnetron sputtering by using metal In-Sn alloy target in an Ar-O 2 gas mixture. The study demonstrates that the deposition on unheated substrates achieved sheet resistance of as low as about 50-60 Ω/□ (or a resistivity of about 7 x 10 -4 Ω cm), and visible transmission of about 90% for a wavelength of 420 nm. The effects of heat treatment at 450 C in air depends on the deposition conditions of the as-deposited ITO films. Although annealing improves the properties of as-deposited ITO films which were deposited with non-optimum conditions, the optimized condition for the formation of the film in the as-deposited state is essential to obtain a high quality transparent conducting coating. (orig.)

  13. Physical model construction for electrical anisotropy of single crystal zinc oxide micro/nanobelt using finite element method

    International Nuclear Information System (INIS)

    Yu, Guangbin; Tang, Chaolong; Song, Jinhui; Lu, Wenqiang

    2014-01-01

    Based on conductivity characterization of single crystal zinc oxide (ZnO) micro/nanobelt (MB/NB), we further investigate the physical mechanism of nonlinear intrinsic resistance-length characteristic using finite element method. By taking the same parameters used in experiment, a model of nonlinear anisotropic resistance change with single crystal MB/NB has been deduced, which matched the experiment characterization well. The nonlinear resistance-length comes from the different electron moving speed in various crystal planes. As the direct outcome, crystallography of the anisotropic semiconducting MB/NB has been identified, which could serve as a simple but effective method to identify crystal growth direction of single crystal semiconducting or conductive nanomaterial

  14. Correlation of Mn charge state with the electrical resistivity of Mn doped indium tin oxide thin films

    KAUST Repository

    Kumar, S. R. Sarath; Hedhili, Mohamed N.; Alshareef, Husam N.; Kasiviswanathan, S.

    2010-01-01

    Correlation of charge state of Mn with the increase in resistivity with Mn concentration is demonstrated in Mn-doped indium tin oxide films. Bonding analysis shows that Mn 2p3/2 core level can be deconvoluted into three components corresponding to Mn2+ and Mn4+ with binding energies 640.8 eV and 642.7 eV, respectively, and a Mn2+ satellite at ∼5.4 eV away from the Mn2+ peak. The presence of the satellite peak unambiguously proves that Mn exists in the +2 charge state. The ratio of concentration of Mn2+ to Mn4+ of ∼4:1 suggests that charge compensation occurs in the n-type films causing the resistivity increase.

  15. Correlation of Mn charge state with the electrical resistivity of Mn doped indium tin oxide thin films

    KAUST Repository

    Kumar, S. R. Sarath

    2010-09-15

    Correlation of charge state of Mn with the increase in resistivity with Mn concentration is demonstrated in Mn-doped indium tin oxide films. Bonding analysis shows that Mn 2p3/2 core level can be deconvoluted into three components corresponding to Mn2+ and Mn4+ with binding energies 640.8 eV and 642.7 eV, respectively, and a Mn2+ satellite at ∼5.4 eV away from the Mn2+ peak. The presence of the satellite peak unambiguously proves that Mn exists in the +2 charge state. The ratio of concentration of Mn2+ to Mn4+ of ∼4:1 suggests that charge compensation occurs in the n-type films causing the resistivity increase.

  16. Effect of cesium assistance on the electrical and structural properties of indium tin oxide films grown by magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Song, Jaewon; Hwang, Cheol Seong; Park, Sung Jin; Yoon, Neung Ku [Department of Materials Science and Engineering and Inter-university Semiconductor Research Center, Seoul National University, Seoul 151-742 (Korea, Republic of); Sorona Inc., Pyeongtaek, Gyeonggi 451-841 (Korea, Republic of)

    2009-07-15

    Indium tin oxide (ITO) thin films were deposited by cesium (Cs)-assisted dc magnetron sputtering in an attempt to achieve a high performance at low temperatures. The films were deposited on SiO{sub 2}/Si wafer and glass (Eagle 2000) substrates at a substrate temperature of 100 degree sign C with a Cs vapor flow during the deposition process. The ITO thin films deposited in the presence of Cs vapor showed better crystallinity than the control films grown under normal Ar/O{sub 2} plasma conditions. The resistivity of the films with the Cs assistance was lower than that of the control films. The lowest resistivity of 6.2x10{sup -4} {Omega} cm, which is {approx}20% lower than that of the control sample, was obtained without any postdeposition thermal annealing. The surface roughness increased slightly when Cs vapor was added. The optical transmittance was >80% at wavelengths ranging from 380 to 700 nm.

  17. Four-probe electrical-transport measurements on single indium tin oxide nanowires between 1.5 and 300 K

    Science.gov (United States)

    Chiu, Shao-Pin; Chung, Hui-Fang; Lin, Yong-Han; Kai, Ji-Jung; Chen, Fu-Rong; Lin, Juhn-Jong

    2009-03-01

    Single-crystalline indium tin oxide (ITO) nanowires (NWs) were grown by the standard thermal evaporation method. The as-grown NWs were typically 100-300 nm in diameter and a few µm long. Four-probe submicron Ti/Au electrodes on individual NWs were fabricated by the electron-beam lithography technique. The resistivities of several single NWs have been measured from 300 down to 1.5 K. The results indicate that the as-grown ITO NWs are metallic, but disordered. The overall temperature behavior of resistivity can be described by the Bloch-Grüneisen law plus a low-temperature correction due to the scattering of electrons off dynamic point defects. This observation suggests the existence of numerous dynamic point defects in as-grown ITO NWs.

  18. Four-probe electrical-transport measurements on single indium tin oxide nanowires between 1.5 and 300 K

    International Nuclear Information System (INIS)

    Chiu, S-P; Lin, J-J; Chung, H-F; Kai, J-J; Chen, F-R; Lin, Y-H

    2009-01-01

    Single-crystalline indium tin oxide (ITO) nanowires (NWs) were grown by the standard thermal evaporation method. The as-grown NWs were typically 100-300 nm in diameter and a few μm long. Four-probe submicron Ti/Au electrodes on individual NWs were fabricated by the electron-beam lithography technique. The resistivities of several single NWs have been measured from 300 down to 1.5 K. The results indicate that the as-grown ITO NWs are metallic, but disordered. The overall temperature behavior of resistivity can be described by the Bloch-Grueneisen law plus a low-temperature correction due to the scattering of electrons off dynamic point defects. This observation suggests the existence of numerous dynamic point defects in as-grown ITO NWs.

  19. Structural, morphological, and electrical properties of doped ceria as a solid electrolyte for intermediate-temperature solid oxide fuel cells

    KAUST Repository

    Stojmenović, M.

    2015-03-11

    The solid solutions of CeO2 with one or more rare-earth oxides among Yb2O3, Sm2O3, and Gd2O3 are synthesized by either modified glycine nitrate procedure (MGNP) or self-propagating reaction at room temperature (SPRT). The overall mole fraction of rare-earth oxide dopants was x = 0.2. The characterization was committed by XRPD, TEM, BET, and Raman Spectroscopy methods. According to XRPD and Raman spectroscopy, the obtained products presented the single-phase solid solutions with basic fluorite-type CeO2 structure, regardless on the number and the concentration of dopants. Both XRPD and TEM analysis evidenced the nanometer particle dimensions. The defect model was applied to calculate lattice parameters of single-, co-, and multi-doped solids. The sintering of the sample nanopowders was performed at 1550 °C, in air atmosphere. The sintered samples were characterized by XRPD, SEM, and complex impedance methods. The sintering did not affect the concentration ratios of the constituents. The highest conductivity at 700 °C amounting to 2.14 × 10−2 and 1.92 × 10−2 Ω−1 cm−1 was measured for the sample Ce0.8Sm0.08Gd0.12O2−δ, synthesized by SPRT and MGNP methods, respectively. The corresponding activation energies of conductivity, measured in the temperature range 500–700 °C, amounted to 0.24 and 0.23 eV.

  20. Effect of nitrogen addition on the structural, electrical, and optical properties of In-Sn-Zn oxide thin films

    Energy Technology Data Exchange (ETDEWEB)

    Jia, Junjun, E-mail: jia@chem.aoyama.ac.jp [Graduate School of Science and Engineering, Aoyama Gakuin University, 5-10-1 Fuchinobe, Chuo, Sagamihara, Kanagawa 252-5258 (Japan); Torigoshi, Yoshifumi; Suko, Ayaka; Nakamura, Shin-ichi [Graduate School of Science and Engineering, Aoyama Gakuin University, 5-10-1 Fuchinobe, Chuo, Sagamihara, Kanagawa 252-5258 (Japan); Kawashima, Emi; Utsuno, Futoshi [Advanced Technology Research Laboratories, Idemitsu Kosan Co., Ltd., Sodegaura, Chiba 299-0293 (Japan); Shigesato, Yuzo, E-mail: yuzo@chem.aoyama.ac.jp [Graduate School of Science and Engineering, Aoyama Gakuin University, 5-10-1 Fuchinobe, Chuo, Sagamihara, Kanagawa 252-5258 (Japan)

    2017-02-28

    Highlights: • Nitrogen addition induces the structure of ITZO film change from amorphous phase to a c-axis oriented InN polycrystalline phase. • Nitrogen addition suppressed the formation of oxygen-related vacancies in ITZO films. • A red-shift in the optical band edge for ITZO films was observed as the nitrogen flow ratio increased, which was due to the generation of InN crystallites. - Abstract: Indium-tin-zinc oxide (ITZO) films were deposited at various nitrogen flow ratios using magnetron sputtering. At a nitrogen flow ratio of 40%, the structure of ITZO film changed from amorphous, with a short-range-ordered In{sub 2}O{sub 3} phase, to a c-axis oriented InN polycrystalline phase, where InN starts to nucleate from an amorphous In{sub 2}O{sub 3} matrix. Whereas, nitrogen addition had no obvious effect on the structure of indium-gallium-zinc oxide (IGZO) films even at a nitrogen flow ratio of 100%. Nitrogen addition also suppressed the formation of oxygen-related vacancies in ITZO films when the nitrogen flow ratio was less than 20%, and higher nitrogen addition led to an increase in carrier density. Moreover, a red-shift in the optical band edge was observed as the nitrogen flow ratio increased, which could be attributed to the generation of InN crystallites. We anticipate that the present findings demonstrating nitrogen-addition induced structural changes can help to understand the environment-dependent instability in amorphous IGZO or ITZO based thin-film transistors (TFTs).

  1. Structural, morphological, and electrical properties of doped ceria as a solid electrolyte for intermediate-temperature solid oxide fuel cells

    KAUST Repository

    Stojmenović, M.; Zunic, Milan; Gulicovski, J.; Bajuk-Bogdanović, D.; Holclajtner-Antunović, I.; Dodevski, V.; Mentus, S.

    2015-01-01

    The solid solutions of CeO2 with one or more rare-earth oxides among Yb2O3, Sm2O3, and Gd2O3 are synthesized by either modified glycine nitrate procedure (MGNP) or self-propagating reaction at room temperature (SPRT). The overall mole fraction of rare-earth oxide dopants was x = 0.2. The characterization was committed by XRPD, TEM, BET, and Raman Spectroscopy methods. According to XRPD and Raman spectroscopy, the obtained products presented the single-phase solid solutions with basic fluorite-type CeO2 structure, regardless on the number and the concentration of dopants. Both XRPD and TEM analysis evidenced the nanometer particle dimensions. The defect model was applied to calculate lattice parameters of single-, co-, and multi-doped solids. The sintering of the sample nanopowders was performed at 1550 °C, in air atmosphere. The sintered samples were characterized by XRPD, SEM, and complex impedance methods. The sintering did not affect the concentration ratios of the constituents. The highest conductivity at 700 °C amounting to 2.14 × 10−2 and 1.92 × 10−2 Ω−1 cm−1 was measured for the sample Ce0.8Sm0.08Gd0.12O2−δ, synthesized by SPRT and MGNP methods, respectively. The corresponding activation energies of conductivity, measured in the temperature range 500–700 °C, amounted to 0.24 and 0.23 eV.

  2. The iron and cerium oxide influence on the electric conductivity and the corrosion resistance of anodized aluminium; A influencia do ferro e do oxido de cerio sobre a condutividade eletrica e a resistencia a corrosao do aluminio anodizado

    Energy Technology Data Exchange (ETDEWEB)

    Souza, Kellie Provazi de

    2006-07-01

    The influence of different treatments on the aluminum system covered with aluminum oxide is investigated. The aluminum anodization in sulphuric media and in mixed sulphuric and phosphoric media was used to alter the corrosion resistance, thickness, coverage degree and microhardness of the anodic oxide. Iron electrodeposition inside the anodic oxide was used to change its electric conductivity and corrosion resistance. Direct and pulsed current were used for iron electrodeposition and the Fe(SO{sub 4}){sub 2}(NH{sub 4}){sub 2}.6H{sub 2}O electrolyte composition was changed with the addition of boric and ascorbic acids. To the sealing treatment the CeCl{sub 3} composition was varied. The energy dispersive x-ray (EDS), the x-ray fluorescence spectroscopy (FRX) and the morphologic analysis by scanning electronic microscopy (SEM) allowed to verify that, the pulsed current increase the iron content inside the anodic layer and that the use of the additives inhibits the iron oxidation. The chronopotentiometric curves obtained during iron electrodeposition indicated that the boric and ascorbic acids mixture increased the electrodeposition process efficiency. The electrochemical impedance spectroscopy (EIE), the Vickers (Hv) microhardness measurements and morphologic analysis evidenced that the sealing treatment improves the corrosion resistance of the anodic film modified with iron. The electrical impedance (EI) technique allowed to prove the electric conductivity increase of the anodized aluminum with iron electrodeposited even after the cerium low concentration treatment. Iron nanowires were prepared by using the anodic oxide pores as template. (author)

  3. Erasing Bisexual Identity: The Visibility and Invisibility of Bisexuality as a Sexual Identity in the Dutch Homosexual Movement, 1946-1972.

    Science.gov (United States)

    van Alphen, Elise C J

    2017-01-01

    Scholars of bisexuality commonly agree that bisexuality as a distinct sexual identity remained invisible for epistemic reasons until the 1970s. This article examines this dominant explanation for the late invention of bisexual identity by discussing how bisexuality functioned in the homosexual movement in the Netherlands from 1946 to the early 1970s. This historical case study shows that in the Netherlands bisexuality as an identity existed in the movement in the first postwar decades and was erased in the late 1960s, not only for epistemic reasons but also for tactical ones. The article aims to contribute to a better insight into the history of bisexuality and the politics in the Dutch postwar homosexual movement.

  4. Comparison between electrically evoked and voluntary isometric contractions for biceps brachii muscle oxidative metabolism using near-infrared spectroscopy.

    Science.gov (United States)

    Muthalib, Makii; Jubeau, Marc; Millet, Guillaume Y; Maffiuletti, Nicola A; Nosaka, Kazunori

    2009-09-01

    This study compared voluntary (VOL) and electrically evoked isometric contractions by muscle stimulation (EMS) for changes in biceps brachii muscle oxygenation (tissue oxygenation index, DeltaTOI) and total haemoglobin concentration (DeltatHb = oxygenated haemoglobin + deoxygenated haemoglobin) determined by near-infrared spectroscopy. Twelve men performed EMS with one arm followed 24 h later by VOL with the contralateral arm, consisting of 30 repeated (1-s contraction, 1-s relaxation) isometric contractions at 30% of maximal voluntary contraction (MVC) for the first 60 s, and maximal intensity contractions thereafter (MVC for VOL and maximal tolerable current at 30 Hz for EMS) until MVC decreased approximately 30% of pre-exercise MVC. During the 30 contractions at 30% MVC, DeltaTOI decrease was significantly (P < 0.05) greater and DeltatHb was significantly (P < 0.05) lower for EMS than VOL, suggesting that the metabolic demand for oxygen in EMS is greater than VOL at the same torque level. However, during maximal intensity contractions, although EMS torque (approximately 40% of VOL) was significantly (P < 0.05) lower than VOL, DeltaTOI was similar and tHb was significantly (P < 0.05) lower for EMS than VOL towards the end, without significant differences between the two sessions in the recovery period. It is concluded that the oxygen demand of the activated biceps brachii muscle in EMS is comparable to VOL at maximal intensity.

  5. Property and microstructural nonuniformity in the yttrium-barium-copper-oxide superconductor determined from electrical, magnetic, and ultrasonic measurements

    International Nuclear Information System (INIS)

    Roth, D.J.

    1991-01-01

    This dissertation is presented in two major chapters. In the first chapter, the use of ultrasonic velocity for estimating pore fraction in YBCO and other polycrystalline materials is reviewed, modeled, and statistically analyzed. This chapter provides the basis for using ultrasonic velocity to interrogate microstructure. In the second chapter, (1) the effect of pore fraction (0.10-0.25) on superconductor properties of YBCO samples is characterized, (2) spatial (within-sample) variations in microstructure and superconductor properties are investigated and (3) the effect of oxygen content on elastic behavior is examined. Experimental methods used included a.c. susceptibility, electrical, and ultrasonic-velocity measurements. Superconductor properties measured included transition temperature, magnetic transition width, transport and magnetic critical current density, magnetic shielding, a.c. loss, and sharpness of the voltage-current characteristic. Superconductor properties including within-sample uniformity were generally poorest for samples containing the lowest (0.10) pore fraction. Ultrasonic velocity was linearly related to pore fraction thereby allowing sample classification. Changes in superconducting behavior were observed consistent with changes in oxygen content

  6. Studies on frequency dependent electrical and dielectric properties of sintered zinc oxide pellets: effects of Al-doping

    Science.gov (United States)

    Tewari, S.; Ghosh, A.; Bhattacharjee, A.

    2016-11-01

    Sintered pellets of zinc oxide (ZnO), both undoped and Al-doped are prepared through a chemical process. Dopant concentration of Aluminium in ZnO [Al/Zn in weight percentage (wt%)] is varied from 0 to 3 wt%. After synthesis structural characterisation of the samples are performed with XRD and SEM-EDAX which confirm that all the samples are of ZnO having polycrystalline nature with particle size from 108.6 to 116 nm. Frequency dependent properties like a.c. conductivity, capacitance, impedance and phase angle are measured in the frequency range 10 Hz to 100 kHz as a function of temperature (in the range 25-150 °C). Nature of a.c. conductivity in these samples indicates hopping type of conduction arising from localised defect states. The frequency and temperature dependent properties under study are found to be as per correlated barrier hoping model. Dielectric and impedance properties studied in the samples indicate distributed relaxation, showing decrease of relaxation time with temperature.

  7. Electrical properties of sputtered-indium tin oxide film contacts on n-type GaN

    International Nuclear Information System (INIS)

    Hwang, J. D.; Lin, C. C.; Chen, W. L.

    2006-01-01

    A transparent indium tin oxide (ITO) Ohmic contact on n-type gallium nitride (GaN) (dopant concentration of 2x10 17 cm -3 ) having a specific contact resistance of 4.2x10 -6 Ω cm 2 was obtained. In this study, ITO film deposition method was implemented by sputtering. We found that the barrier height, 0.68 eV, between ITO and n-type GaN is the same for both evaporated- and sputtered-ITO films. However, the 0.68 eV in barrier height renders the evaporated-ITO/n-GaN Schottky contact. This behavior is different from that of our sputtered-ITO/n-GaN, i.e., Ohmic contact. During sputtering, oxygen atoms on the GaN surface were significantly removed, thereby resulting in an improvement in contact resistance. Moreover, a large number of nitrogen (N) vacancies, caused by sputtering, were produced near the GaN surface. These N vacancies acted as donors for electrons, thus affecting a heavily doped n-type formed at the subsurface below the sputtered ITO/n-GaN. Both oxygen removal and heavy doping near the GaN surface, caused by N vacancies, in turn led to a reduction in contact resistivity as a result of electrons tunneling across the depletion layer from the ITO to the n-type GaN. All explanations are given by Auger analysis and x-ray photoelectron spectroscopy

  8. Compositional dependence of optical and electrical properties of indium doped zinc oxide (IZO) thin films deposited by chemical spray pyrolysis

    Science.gov (United States)

    Dintle, Lawrence K.; Luhanga, Pearson V. C.; Moditswe, Charles; Muiva, Cosmas M.

    2018-05-01

    The structural and optoelectronic properties of undoped and indium doped zinc oxide (IZO) thin films grown on glass substrates through a simple reproducible custom-made pneumatic chemical spray pyrolysis technique are presented. X-ray diffraction (XRD) results showed a polycrystalline structure of hexagonal wurtzite phase growing preferentially along the (002) plane for the undoped sample. Increase in dopant content modified the orientation leading to more pronounced (100) and (101) reflections. Optical transmission spectra showed high transmittance of 80-90% in the visible range for all thin films. The optical band gap energy (Eg) was evaluated on the basis of the derivative of transmittance (dT/dλ) versus wavelength (λ) model and Tauc's extrapolation method in the region where the absorption coefficient, α ≥ 104 cm-1. The observed values of Eg were found to decrease generally with increasing In dopant concentration. From the figure of merit calculations a sample with 4 at.% In dopant concentration showed better optoelectronic properties.

  9. Structure, optical and electrical properties of indium tin oxide ultra thin films prepared by jet nebulizer spray pyrolysis technique

    Directory of Open Access Journals (Sweden)

    M. Thirumoorthi

    2016-03-01

    Full Text Available Indium tin oxide (ITO thin films have been prepared by jet nebulizer spray pyrolysis technique for different Sn concentrations on glass substrates. X-ray diffraction patterns reveal that all the films are polycrystalline of cubic structure with preferentially oriented along (222 plane. SEM images show that films exhibit uniform surface morphology with well-defined spherical particles. The EDX spectrum confirms the presence of In, Sn and O elements in prepared films. AFM result indicates that the surface roughness of the films is reduced as Sn doping. The optical transmittance of ITO thin films is improved from 77% to 87% in visible region and optical band gap is increased from 3.59 to 4.07 eV. Photoluminescence spectra show mainly three emissions peaks (UV, blue and green and a shift observed in UV emission peak. The presence of functional groups and chemical bonding was analyzed by FTIR. Hall effect measurements show prepared films having n-type conductivity with low resistivity (3.9 × 10−4 Ω-cm and high carrier concentrations (6.1 × 1020 cm−3.

  10. Physical and electrical characteristics of Si/SiC quantum dot superlattice solar cells with passivation layer of aluminum oxide.

    Science.gov (United States)

    Tsai, Yi-Chia; Li, Yiming; Samukawa, Seiji

    2017-12-01

    In this work, we numerically simulate the silicon (Si)/silicon carbide (SiC) quantum dot superlattice solar cell (SiC-QDSL) with aluminum oxide (Al 2 O 3 -QDSL) passivation. By exploiting the passivation layer of Al 2 O 3 , the high photocurrent and the conversion efficiency can be achieved without losing the effective bandgap. Based on the two-photon transition mechanism in an AM1.5 and a one sun illumination, the simulated short-circuit current (J sc ) of 4.77 mA cm -2 is very close to the experimentally measured 4.75 mA cm -2 , which is higher than those of conventional SiC-QDSLs. Moreover, the efficiency fluctuation caused by the structural variation is less sensitive by using the passivation layer. A high conversion efficiency of 17.4% is thus estimated by adopting the QD's geometry used in the experiment; and, it can be further boosted by applying a hexagonal QD formation with an inter-dot spacing of 0.3 nm.

  11. Physical and electrical characteristics of Si/SiC quantum dot superlattice solar cells with passivation layer of aluminum oxide

    Science.gov (United States)

    Tsai, Yi-Chia; Li, Yiming; Samukawa, Seiji

    2017-12-01

    In this work, we numerically simulate the silicon (Si)/silicon carbide (SiC) quantum dot superlattice solar cell (SiC-QDSL) with aluminum oxide (Al2O3-QDSL) passivation. By exploiting the passivation layer of Al2O3, the high photocurrent and the conversion efficiency can be achieved without losing the effective bandgap. Based on the two-photon transition mechanism in an AM1.5 and a one sun illumination, the simulated short-circuit current (J sc) of 4.77 mA cm-2 is very close to the experimentally measured 4.75 mA cm-2, which is higher than those of conventional SiC-QDSLs. Moreover, the efficiency fluctuation caused by the structural variation is less sensitive by using the passivation layer. A high conversion efficiency of 17.4% is thus estimated by adopting the QD’s geometry used in the experiment; and, it can be further boosted by applying a hexagonal QD formation with an inter-dot spacing of 0.3 nm.

  12. Optical and electrical properties of thin films of bismuth ferric oxide; Propiedades opticas y electricas de peliculas delgadas de oxido de bismuto ferrico

    Energy Technology Data Exchange (ETDEWEB)

    Cardona R, D.

    2014-07-01

    The bismuth ferric oxide (BFO) has caused great attention in recent years because of their multi ferric properties, making it very attractive for different technological applications. In this paper simultaneous ablation of two white (Bi and Fe{sub 2}O{sub 3}) was used in a reactive atmosphere (containing oxygen) to deposit thin films of BFO. The composition of the films is changed by controlling the plasma parameters such as the average kinetic energy of the ions (E p) and the plasma density (Np). The effects caused by excess of Bi and Fe in atomic structure and the optical and electrical properties of the films BiFeO{sub 3} in terms of plasma parameters were studied. The X-ray diffraction patterns of BFO samples with excess of bismuth above 2% at. They exhibited small changes in structure leading to improved levels of leakage currents compared to levels of the film with a stoichiometry close to BiFeO{sub 3} composition. These samples showed a secondary phase (Bi{sub 2}5FeO{sub 4}0 selenite type) that led to the increase in the values of band gap and resistivity as well as the improvement of the piezoelectric properties. On the other hand, the films with iron excess showed as secondary phase compounds of iron oxide (α - γ-Fe{sub 2}O{sub 3}) that caused increments in the conductivity and decrease in the values of band gap. The results are discussed in terms of the excesses of Bi and Fe which were correlated with the plasma parameters. (Author)

  13. Probing of O2 vacancy defects and correlated magnetic, electrical and photoresponse properties in indium-tin oxide nanostructures by spectroscopic techniques

    Science.gov (United States)

    Ghosh, Shyamsundar; Dev, Bhupendra Nath

    2018-05-01

    Indium-tin oxide (ITO) 1D nanostructures with tunable morphologies i.e. nanorods, nanocombs and nanowires are grown on c-axis (0 0 0 1) sapphire (Al2O3) substrate in oxygen deficient atmosphere through pulsed laser deposition (PLD) technique and the effect of oxygen vacancies on optical, electrical, magnetic and photoresponse properties is investigated using spectroscopic methods. ITO nanostructures are found to be enriched with significant oxygen vacancy defects as evident from X-ray photoelectron and Raman spectroscopic analysis. Photoluminescence spectra exhibited intense mid-band blue emission at wavelength of region of 400-450 nm due to the electronic transition from conduction band maxima (CBM) to the singly ionized oxygen-vacancy (VO+) defect level within the band-gap. Interestingly, ITO nanostructures exhibited significant room-temperature ferromagnetism (RTFM) and the magnetic moment found proportional to concentration of VO+ defects which indicates VO+ defects are mainly responsible for the observed RTFM in nanostructures. ITO nanowires being enriched with more VO+ defects exhibited strongest RTFM as compared to other morphologies. Current voltage (I-V) characteristics of ITO nanostructures showed an enhancement of current under UV light as compared to dark which indicates such 1D nanostructure can be used as photovoltaic material. Hence, the study shows that there is ample opportunity to tailor the properties of ITOs through proper defect engineering's and such photosensitive ferromagnetic semiconductors might be promising for spintronic and photovoltaic applications.

  14. Improving the electrical properties of lanthanum silicate films on ge metal oxide semiconductor capacitors by adopting interfacial barrier and capping layers.

    Science.gov (United States)

    Choi, Yu Jin; Lim, Hajin; Lee, Suhyeong; Suh, Sungin; Kim, Joon Rae; Jung, Hyung-Suk; Park, Sanghyun; Lee, Jong Ho; Kim, Seong Gyeong; Hwang, Cheol Seong; Kim, HyeongJoon

    2014-05-28

    The electrical properties of La-silicate films grown by atomic layer deposition (ALD) on Ge substrates with different film configurations, such as various Si concentrations, Al2O3 interfacial passivation layers, and SiO2 capping layers, were examined. La-silicate thin films were deposited using alternating injections of the La[N{Si(CH3)3}2]3 precursor with O3 as the La and O precursors, respectively, at a substrate temperature of 310 °C. The Si concentration in the La-silicate films was further controlled by adding ALD cycles of SiO2. For comparison, La2O3 films were also grown using [La((i)PrCp)3] and O3 as the La precursor and oxygen source, respectively, at the identical substrate temperature. The capacitance-voltage (C-V) hysteresis decreased with an increasing Si concentration in the La-silicate films, although the films showed a slight increase in the capacitance equivalent oxide thickness. The adoption of Al2O3 at the interface as a passivation layer resulted in lower C-V hysteresis and a low leakage current density. The C-V hysteresis voltages of the La-silicate films with Al2O3 passivation and SiO2 capping layers was significantly decreased to ∼0.1 V, whereas the single layer La-silicate film showed a hysteresis voltage as large as ∼1.0 V.

  15. Boron cross-linked graphene oxide/polyvinyl alcohol nanocomposite gel electrolyte for flexible solid-state electric double layer capacitor with high performance

    KAUST Repository

    Huang, Yi-Fu; Wu, Peng-Fei; Zhang, Ming-Qiu; Ruan, Wen-Hong; Giannelis, Emmanuel P.

    2014-01-01

    A new family of boron cross-linked graphene oxide/polyvinyl alcohol (GO-B-PVA) nanocomposite gels is prepared by freeze-thaw/boron cross-linking method. Then the gel electrolytes saturated with KOH solution are assembled into electric double layer capacitors (EDLCs). Structure, thermal and mechanical properties of GO-B-PVA are explored. The electrochemical properties of EDLCs using GO-B-PVA/KOH are investigated, and compared with those using GO-PVA/KOH gel or KOH solution electrolyte. FTIR shows that boron cross-links are introduced into GO-PVA, while the boronic structure inserted into agglomerated GO sheets is demonstrated by DMA analysis. The synergy effect of the GO and the boron crosslinking benefits for ionic conductivity due to unblocking ion channels, and for improvement of thermal stability and mechanical properties of the electrolytes. Higher specific capacitance and better cycle stability of EDLCs are obtained by using the GO-B-PVA/KOH electrolyte, especially the one at higher GO content. The nanocomposite gel electrolytes with excellent electrochemical properties and solid-like character are candidates for the industrial application in high-performance flexible solid-state EDLCs. © 2014 Elsevier Ltd.

  16. Analysis of interfacial energy states in Au/pentacene/polyimide/indium-zinc-oxide diodes by electroluminescence spectroscopy and electric-field-induced optical second-harmonic generation measurement

    Science.gov (United States)

    Taguchi, Dai; Manaka, Takaaki; Iwamoto, Mitsumasa

    2016-03-01

    By using electroluminescence (EL) spectroscopy and electric-field-induced optical second-harmonic generation (EFISHG) measurement, we analyzed interfacial energy states in Au/pentacene/polyimide/indium-zinc-oxide (IZO) diodes, to characterize the pentacene/polyimide interface. Under positive voltage application to the Au electrode with reference to the IZO electrode, the EFISHG showed that holes are injected from Au electrode, and accumulate at the pentacene/polyimide interface with the surface charge density of Qs = 3.8 × 10-7 C/cm2. The EL spectra suggested that the accumulated holes are not merely located in the pentacene but they are transferred to the interface states of polyimide. These accumulated holes distribute with the interface state density greater than 1012 cm-2 eV-1 in the range E = 1.5-1.8 and 1.7-2.4 eV in pentacene and in polyimide, respectively, under assumption that accumulated holes govern recombination radiation. The EL-EFISHG measurement is helpful to characterize organic-organic layer interfaces in organic devices and provides a way to analyze interface energy states.

  17. An Approach to Solid-State Electrical Double Layer Capacitors Fabricated with Graphene Oxide-Doped, Ionic Liquid-Based Solid Copolymer Electrolytes.

    Science.gov (United States)

    Fattah, N F A; Ng, H M; Mahipal, Y K; Numan, Arshid; Ramesh, S; Ramesh, K

    2016-06-06

    Solid polymer electrolyte (SPE) composed of semi-crystalline poly (vinylidene fluoride-hexafluoropropylene) [P(VdF-HFP)] copolymer, 1-ethyl-3-methylimidazolium bis (trifluoromethyl sulphonyl) imide [EMI-BTI] and graphene oxide (GO) was prepared and its performance evaluated. The effects of GO nano-filler were investigated in terms of enhancement in ionic conductivity along with the electrochemical properties of its electrical double layer capacitors (EDLC). The GO-doped SPE shows improvement in ionic conductivity compared to the P(VdF-HFP)-[EMI-BTI] SPE system due to the existence of the abundant oxygen-containing functional group in GO that assists in the improvement of the ion mobility in the polymer matrix. The complexation of the materials in the SPE is confirmed in X-ray diffraction (XRD) and thermogravimetric analysis (TGA) studies. The electrochemical performance of EDLC fabricated with GO-doped SPE is examined using cyclic voltammetry and charge-discharge techniques. The maximum specific capacitance obtained is 29.6 F∙g -1 , which is observed at a scan rate of 3 mV/s in 6 wt % GO-doped, SPE-based EDLC. It also has excellent cyclic retention as it is able keep the performance of the EDLC at 94% even after 3000 cycles. These results suggest GO doped SPE plays a significant role in energy storage application.

  18. Boron cross-linked graphene oxide/polyvinyl alcohol nanocomposite gel electrolyte for flexible solid-state electric double layer capacitor with high performance

    KAUST Repository

    Huang, Yi-Fu

    2014-06-01

    A new family of boron cross-linked graphene oxide/polyvinyl alcohol (GO-B-PVA) nanocomposite gels is prepared by freeze-thaw/boron cross-linking method. Then the gel electrolytes saturated with KOH solution are assembled into electric double layer capacitors (EDLCs). Structure, thermal and mechanical properties of GO-B-PVA are explored. The electrochemical properties of EDLCs using GO-B-PVA/KOH are investigated, and compared with those using GO-PVA/KOH gel or KOH solution electrolyte. FTIR shows that boron cross-links are introduced into GO-PVA, while the boronic structure inserted into agglomerated GO sheets is demonstrated by DMA analysis. The synergy effect of the GO and the boron crosslinking benefits for ionic conductivity due to unblocking ion channels, and for improvement of thermal stability and mechanical properties of the electrolytes. Higher specific capacitance and better cycle stability of EDLCs are obtained by using the GO-B-PVA/KOH electrolyte, especially the one at higher GO content. The nanocomposite gel electrolytes with excellent electrochemical properties and solid-like character are candidates for the industrial application in high-performance flexible solid-state EDLCs. © 2014 Elsevier Ltd.

  19. An Approach to Solid-State Electrical Double Layer Capacitors Fabricated with Graphene Oxide-Doped, Ionic Liquid-Based Solid Copolymer Electrolytes

    Directory of Open Access Journals (Sweden)

    N. F. A. Fattah

    2016-06-01

    Full Text Available Solid polymer electrolyte (SPE composed of semi-crystalline poly (vinylidene fluoride-hexafluoropropylene [P(VdF-HFP] copolymer, 1-ethyl-3-methylimidazolium bis (trifluoromethyl sulphonyl imide [EMI-BTI] and graphene oxide (GO was prepared and its performance evaluated. The effects of GO nano-filler were investigated in terms of enhancement in ionic conductivity along with the electrochemical properties of its electrical double layer capacitors (EDLC. The GO-doped SPE shows improvement in ionic conductivity compared to the P(VdF-HFP-[EMI-BTI] SPE system due to the existence of the abundant oxygen-containing functional group in GO that assists in the improvement of the ion mobility in the polymer matrix. The complexation of the materials in the SPE is confirmed in X-ray diffraction (XRD and thermogravimetric analysis (TGA studies. The electrochemical performance of EDLC fabricated with GO-doped SPE is examined using cyclic voltammetry and charge–discharge techniques. The maximum specific capacitance obtained is 29.6 F∙g−1, which is observed at a scan rate of 3 mV/s in 6 wt % GO-doped, SPE-based EDLC. It also has excellent cyclic retention as it is able keep the performance of the EDLC at 94% even after 3000 cycles. These results suggest GO doped SPE plays a significant role in energy storage application.

  20. Electrical and Optical Characterization of Sputtered Silicon Dioxide, Indium Tin Oxide, and Silicon Dioxide/Indium Tin Oxide Antireflection Coating on Single-Junction GaAs Solar Cells

    Directory of Open Access Journals (Sweden)

    Wen-Jeng Ho

    2017-06-01

    Full Text Available This study characterized the electrical and optical properties of single-junction GaAs solar cells coated with antireflective layers of silicon dioxide (SiO2, indium tin oxide (ITO, and a hybrid layer of SiO2/ITO applied using Radio frequency (RF sputtering. The conductivity and transparency of the ITO film were characterized prior to application on GaAs cells. Reverse saturation-current and ideality factor were used to evaluate the passivation performance of the various coatings on GaAs solar cells. Optical reflectance and external quantum efficiency response were used to evaluate the antireflective performance of the coatings. Photovoltaic current-voltage measurements were used to confirm the efficiency enhancement obtained by the presence of the anti-reflective coatings. The conversion efficiency of the GaAs cells with an ITO antireflective coating (23.52% exceeded that of cells with a SiO2 antireflective coating (21.92%. Due to lower series resistance and higher short-circuit current-density, the carrier collection of the GaAs cell with ITO coating exceeded that of the cell with a SiO2/ITO coating.

  1. Comparative effect of a 1 h session of electrical muscle stimulation and walking activity on energy expenditure and substrate oxidation in obese subjects.

    Science.gov (United States)

    Grosset, Jean-François; Crowe, Louis; De Vito, Giuseppe; O'Shea, Donal; Caulfield, Brian

    2013-01-01

    It has previously been shown that low-frequency neuromuscular electrical stimulation (NMES) techniques can induce increases in energy expenditure similar to those associated with exercise. This study investigated the metabolic and cardiovascular effects of a 1 h session of lower limb NMES and compared cardiovascular response with that observed during walking in nine obese subjects (three males) (age = 43.8 ± 3.0 years; body mass index (BMI) = 41.5 ± 1.8 kg/m(2)). The NMES protocol consisted of delivering a complex pulse pattern to the thigh muscles for 1 h. The walking test consisted of five 4-min bouts starting at 2 km/h with 1 km/h increments up to 6 km/h. In both tests, an open-circuit gas analyser was used to assess O(2) consumption ([Formula: see text]O(2)), CO(2) production ([Formula: see text]CO(2)), respiratory exchange ratio (RER), and heart rate (HR). Rates of fat oxidation (RFO) and carbohydrate oxidation (CHO) were estimated by indirect calorimetry. One hour of NMES significantly increased [Formula: see text]O(2), HR, RER, and mean energy expenditure compared with resting values, reaching 8.7 ± 1.3 mL·min(-2)·kg(-1) (47% of [Formula: see text]O(2peak)), 114.8 ± 7.5 bpm, 0.95, and 318.5 ± 64.3 kcal/h, respectively. CHO, but not RFO, increased during 1 h of NMES. With NMES, CHO was greater and RFO was less than at all walking speeds except 6 km/h. Lactate also increased more with NMES, to 3.5 ± 0.7 mmol versus a maximum of 1.5 ± 0.3 mmol with the walking protocol. These results suggest that NMES can be used in an obese population to induce an effective cardiovascular exercise response. In fact, the observed increase in energy expenditure induced by 1 h of NMES is clinically important and comparable with that recommended in weight management programs.

  2. Electrically conductive anodized aluminum coatings

    Science.gov (United States)

    Alwitt, Robert S. (Inventor); Liu, Yanming (Inventor)

    2001-01-01

    A process for producing anodized aluminum with enhanced electrical conductivity, comprising anodic oxidation of aluminum alloy substrate, electrolytic deposition of a small amount of metal into the pores of the anodized aluminum, and electrolytic anodic deposition of an electrically conductive oxide, including manganese dioxide, into the pores containing the metal deposit; and the product produced by the process.

  3. Large-scale electricity storage utilizing reversible solid oxide cells combined with underground storage of CO2 and CH4

    DEFF Research Database (Denmark)

    Jensen, Søren Højgaard; Graves, Christopher R.; Mogensen, Mogens Bjerg

    2015-01-01

    Electricity storage is needed on an unprecedented scale to sustain the ongoing transition of electricity generation from fossil fuels to intermittent renewable energy sources like wind and solar power. Today pumped hydro is the only commercially viable large-scale electricity storage technology......-scale electricity storage with a round-trip efficiency exceeding 70% and an estimated storage cost around 3 b kW-1 h-1, i.e., comparable to pumped hydro and much better than previously proposed technologies...

  4. The influence of value of intensity of constant electric field on structure, thermal physic and conductivity nanocomposites epoxy resin-oxide metal

    International Nuclear Information System (INIS)

    Vilensky, V.O.; Demchenko, V.I.

    2009-01-01

    Influence of constant electric field on structure, specific thermal capacity, thermomechanical properties and electrical conduction nanocomposites on a basis epoxy resin and fillers Fe 2 O 3 , Al 2 O 3 is investigated. The received results show, that application of constant electric field gives the chance to influence level of perfection of crystal structure filler (Fe 2 O 3 ) in structure to a composite, thus the size of crystals decreases from 18.0 nm (for initial samples of composites) to 7.7 nm (for the composites generated under the influence of CEF). Nanocomposites generated in CEF characterization the higher values of a electrical conduction

  5. Evaluation of electrical broad bandwidth impedance spectroscopy as a tool for body composition measurement in cows in comparison with body measurements and the deuterium oxide dilution method.

    Science.gov (United States)

    Schäff, C T; Pliquett, U; Tuchscherer, A; Pfuhl, R; Görs, S; Metges, C C; Hammon, H M; Kröger-Koch, C

    2017-05-01

    Body fatness and degree of body fat mobilization in cows vary enormously during their reproduction cycle and influence energy partitioning and metabolic adaptation. The objective of the study was to test bioelectrical impedance spectroscopy (BIS) as a method for predicting fat depot mass (FDM), in living cows. The FDM is defined as the sum of subcutaneous, omental, mesenteric, retroperitoneal, and carcass fat mass. Bioelectrical impedance spectroscopy is compared with the prediction of FDM from the deuterium oxide (DO) dilution method and from body conformation measurements. Charolais × Holstein Friesian (HF; = 18; 30 d in milk) crossbred cows and 2 HF (lactating and nonlactating) cows were assessed by body conformation measurements, BIS, and the DO dilution method. The BCS of cows was a mean of 3.68 (SE 0.64). For the DO dilution method, a bolus of 0.23 g/kg BW DO (60 atom%) was intravenously injected and deuterium (D) enrichment was analyzed in plasma and whey by stabile isotope mass spectrometry, and total body water content was calculated. Impedance measurement was performed using a 4-electrode interface and time domain-based measurement system consisting of a voltage/current converter for applying current stimulus and an amplifier for monitoring voltage across the sensor electrodes. For the BIS, we used complex impedances over three frequency decades that delivers information on intra- and extracellular water and capacity of cell membranes. Impedance data (resistance of extra- and intracellular space, cell membrane capacity, and phase angle) were extracted 1) by simple curve fit to extract the resistance at direct current and high frequency and 2) by using an electrical equivalent circuit. Cows were slaughtered 7 d after BIS and D enrichment measurements and dissected for the measurement of FDM. Multiple linear regression analyses were performed to predict FDM based on data obtained from body conformation measurements, BIS, and D enrichment, and applied

  6. Electrical and electrochemical properties of architectured electrodes based on perovskite and A2MO4-type oxides for Protonic Ceramic Fuel Cell

    International Nuclear Information System (INIS)

    Batocchi, P.; Mauvy, F.; Fourcade, S.; Parco, M.

    2014-01-01

    Two mixed ionic-electronic conducting oxides (MIEC) have been investigated as potential cathode materials for protonic ceramic fuel cell (PCFC): the perovskite Ba 0.5 Sr 0.5 Co 0.8 Fe 0.2 O 3-δ (BSCF) and the Ruddlesden Popper Pr 2 NiO 4+δ (PrN). Their electrical properties have been studied over a large range of water vapour partial pressure. All compounds exhibit high electronic conductivities (σ ≥ 40 S.cm −1 at 600 °C) whatever the pH 2 O of the surrounding atmosphere. Electrochemical characterizations have been performed as a function of pH 2 O, under zero dc conditions and under dc polarization using symmetrical cells based on BaCe 0.9 Y 0.1 O 3-δ (BCY10) as electrolyte. For this purpose, two electrode architectures have been elaborated: a single phase electrode and a composite cathode/BCY10 architectured electrode. All electrodes showed pH 2 O-dependence with promising polarization resistance values lower than 0.8 Ω cm 2 at 600 °C under air whatever the gas humidification rate. The use of architectured electrodes led to a significant decrease of the polarization resistance with values as low as 0.23 and 0.19 Ω cm 2 for PrN and BSCF respectively, at 600 °C and pH 2 O = 0.20 bar. Concerning the oxygen reduction reaction (ORR) mechanisms, rate determining steps involving protons have been identified. They have been respectively assigned to the proton interface transfer and to the water formation and/or desorption for single phase and architectured electrodes. This change has been attributed to an extent of the electrochemically active area and to an enhancement of the protonic transport properties in the architectured electrodes. However electrodes performances seem to be governed by the dissociative adsorption of oxygen species and/or the charge transfer. Concerning performances under dc current, cathodic polarization is reduced when architectured electrodes are used. An enhancement of the electrodes performances has been also evidenced with water

  7. Electrical and morphological characterization of transfer-printed Au/Ti/TiO{sub x}/p{sup +}-Si nano- and microstructures with plasma-grown titanium oxide layers

    Energy Technology Data Exchange (ETDEWEB)

    Weiler, Benedikt, E-mail: benedikt.weiler@nano.ei.tum.de; Nagel, Robin; Albes, Tim; Haeberle, Tobias; Gagliardi, Alessio; Lugli, Paolo [Institute for Nanoelectronics, Technische Universität München, Arcisstrasse 21, 80333 München (Germany)

    2016-04-14

    Highly-ordered, sub-70 nm-MOS-junctions of Au/Ti/TiO{sub x}/p{sup +}-Si were efficiently and reliably fabricated by nanotransfer-printing (nTP) over large areas and their functionality was investigated with respect to their application as MOS-devices. First, we used a temperature-enhanced nTP process and integrated the plasma-oxidation of a nm-thin titanium film being e-beam evaporated directly on the stamp before the printing step without affecting the p{sup +}-Si substrate. Second, morphological investigations (scanning electron microscopy) of the nanostructures confirm the reliable transfer of Au/Ti/TiO{sub x}-pillars of 50 nm, 75 nm, and 100 nm size of superior quality on p{sup +}-Si by our transfer protocol. Third, the fabricated nanodevices are also characterized electrically by conductive AFM. Fourth, the results are compared to probe station measurements on identically processed, i.e., transfer-printed μm-MOS-structures including a systematic investigation of the oxide formation. The jV-characteristics of these MOS-junctions demonstrate the electrical functionality as plasma-grown tunneling oxides and the effectivity of the transfer-printing process for their large-scale fabrication. Next, our findings are supported by fits to the jV-curves of the plasma-grown titanium oxide by kinetic-Monte-Carlo simulations. These fits allowed us to determine the dominant conduction mechanisms, the material parameters of the oxides and, in particular, a calibration of the thickness depending on applied plasma time and power. Finally, also a relative dielectric permittivity of 12 was found for such plasma-grown TiO{sub x}-layers.

  8. Crystallization and electrical resistivity of Cu{sub 2}O and CuO obtained by thermal oxidation of Cu thin films on SiO{sub 2}/Si substrates

    Energy Technology Data Exchange (ETDEWEB)

    De Los Santos Valladares, L., E-mail: ld301@cam.ac.uk [Cavendish Laboratory, University of Cambridge, J.J Thomson Av., Cambridge CB3 0HE (United Kingdom); Materials and Structures Laboratory, Tokyo Institute of Technology, 4259 Nagatsuta-cho, Midori-ku, Yokohama 226-8503 (Japan); Departamento de Fisica, Universidade Federal de Pernambuco, 50670-901, Recife-Pe (Brazil); Salinas, D. Hurtado [Materials and Structures Laboratory, Tokyo Institute of Technology, 4259 Nagatsuta-cho, Midori-ku, Yokohama 226-8503 (Japan); Laboratorio de Ceramicos y Nanomateriales, Facultad de Ciencias Fisicas, Universidad Nacional Mayor de San Marcos, Ap. Postal 14-0149, Lima (Peru); Dominguez, A. Bustamante [Laboratorio de Ceramicos y Nanomateriales, Facultad de Ciencias Fisicas, Universidad Nacional Mayor de San Marcos, Ap. Postal 14-0149, Lima (Peru); Najarro, D. Acosta [Instituto de Fisica, Departamento de Materia Condensada, Universidad Nacional Autonoma de Mexico, Ap. Postal 20-364, CP 01000 (Mexico); Khondaker, S.I. [NanoScience Technology Centre and Department of Physics, University of Central Florida, Orlando, FL 32826 (United States); Mitrelias, T.; Barnes, C.H.W. [Cavendish Laboratory, University of Cambridge, J.J Thomson Av., Cambridge CB3 0HE (United Kingdom); Aguiar, J. Albino [Departamento de Fisica, Universidade Federal de Pernambuco, 50670-901, Recife-Pe (Brazil); Majima, Y. [Materials and Structures Laboratory, Tokyo Institute of Technology, 4259 Nagatsuta-cho, Midori-ku, Yokohama 226-8503 (Japan); CREST, Japan Science and Technology Agency (JST), 4259 Nagatsuta-cho, Midori-ku, Yokohama 226-8503 (Japan)

    2012-08-01

    In this work, we study the crystallization and electrical resistivity of the formed oxides in a Cu/SiO{sub 2}/Si thin film after thermal oxidation by ex-situ annealing at different temperatures up to 1000 Degree-Sign C. Upon increasing the annealing temperature, from the X ray diffractogram the phase evolution Cu {yields} Cu + Cu{sub 2}O {yields} Cu{sub 2}O {yields} Cu{sub 2}O + CuO {yields} CuO was detected. Pure Cu{sub 2}O films are obtained at 200 Degree-Sign C, whereas uniform CuO films without structural surface defects such as terraces, kinks, porosity or cracks are obtained in the temperature range 300-550 Degree-Sign C. In both oxides, crystallization improves with annealing temperature. A resistivity phase diagram, which is obtained from the current-voltage response, is presented here. The resistivity was expected to increase linearly as a function of the annealing temperature due to evolution of oxides. However, anomalous decreases are observed at different temperatures ranges, this may be related to the improvement of the crystallization and crystallite size when the temperature increases. - Highlights: Black-Right-Pointing-Pointer The crystallization and electrical resistivity of oxides in a Cu films are studied. Black-Right-Pointing-Pointer In annealing Cu films, the phase evolution Cu + Cu{sub 2}O {yields} Cu{sub 2}O {yields} Cu{sub 2}O + CuO {yields} CuO occurs. Black-Right-Pointing-Pointer A resistivity phase diagram, obtained from the current-voltage response, is presented. Black-Right-Pointing-Pointer Some decreases in the resistivity may be related to the crystallization.

  9. Influence of addition of indium and of post-annealing on structural, electrical and optical properties of gallium-doped zinc oxide thin films deposited by direct-current magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Pham, Duy Phong [Laboratory of Advanced Materials, University of Science, Vietnam National University, HoChiMinh (Viet Nam); College of Information and Communication Engineering, Sungkyunkwan University, Suwon 440-746 (Korea, Republic of); Nguyen, Huu Truong [Laboratory of Advanced Materials, University of Science, Vietnam National University, HoChiMinh (Viet Nam); Phan, Bach Thang [Laboratory of Advanced Materials, University of Science, Vietnam National University, HoChiMinh (Viet Nam); Faculty of Materials Science, University of Science, Vietnam National University, HoChiMinh (Viet Nam); Hoang, Van Dung [Laboratory of Advanced Materials, University of Science, Vietnam National University, HoChiMinh (Viet Nam); Maenosono, Shinya [School of Materials Science, Japan Advanced Institute of Science and Technology, 1-1 Asahidai, Nomi, Ishikawa 923-1292 (Japan); Tran, Cao Vinh, E-mail: tcvinh@hcmus.edu.vn [Laboratory of Advanced Materials, University of Science, Vietnam National University, HoChiMinh (Viet Nam)

    2015-05-29

    In this study, both gallium-doped zinc oxide (GZO) and indium-added gallium-doped zinc oxide (IGZO) thin films were deposited on commercial glasses by magnetron dc-sputtering in argon atmosphere. The crystal structure, electrical conductivity and optical transmission of as-deposited as well as post-annealed thin films of both GZO and IGZO were investigated for comparison. A small amount of indium introduced into GZO thin films had improved their polycrystalline structure and increased their electrical conductivity by over 29%. All obtained GZO and IGZO thin films have strong [002] crystalline direction, a characteristic orientation of ZnO thin films. Although post-annealed in air at high temperatures up to 500 °C, IGZO thin films still had very low sheet resistance of 6.6 Ω/□. Furthermore, they had very high optical transmission of over 80% in both visible and near-infrared regions. - Highlights: • Doping 0.1 at.% indium enhanced crystalline, electrical properties of GZO films. • The mobility of IGZO films was 25% higher than that of GZO films. • The IGZO films will be potential materials for transparent conducting electrodes.

  10. Influence of addition of indium and of post-annealing on structural, electrical and optical properties of gallium-doped zinc oxide thin films deposited by direct-current magnetron sputtering

    International Nuclear Information System (INIS)

    Pham, Duy Phong; Nguyen, Huu Truong; Phan, Bach Thang; Hoang, Van Dung; Maenosono, Shinya; Tran, Cao Vinh

    2015-01-01

    In this study, both gallium-doped zinc oxide (GZO) and indium-added gallium-doped zinc oxide (IGZO) thin films were deposited on commercial glasses by magnetron dc-sputtering in argon atmosphere. The crystal structure, electrical conductivity and optical transmission of as-deposited as well as post-annealed thin films of both GZO and IGZO were investigated for comparison. A small amount of indium introduced into GZO thin films had improved their polycrystalline structure and increased their electrical conductivity by over 29%. All obtained GZO and IGZO thin films have strong [002] crystalline direction, a characteristic orientation of ZnO thin films. Although post-annealed in air at high temperatures up to 500 °C, IGZO thin films still had very low sheet resistance of 6.6 Ω/□. Furthermore, they had very high optical transmission of over 80% in both visible and near-infrared regions. - Highlights: • Doping 0.1 at.% indium enhanced crystalline, electrical properties of GZO films. • The mobility of IGZO films was 25% higher than that of GZO films. • The IGZO films will be potential materials for transparent conducting electrodes

  11. Analysis of electrical and microstructural characteristics of a ZnO-based varistor doped with rare earth oxide; Analise das caracteristicas microestruturais e eletricas de um varistor a base de ZnO dopado com oxidos de terras raras

    Energy Technology Data Exchange (ETDEWEB)

    Andrade, J.M. de; Dias, R.; Furtado, J.G. de M. [Centro de Pesquisas de Energia Eletrica (CEPEL), Rio de Janeiro, RJ (Brazil); Assuncao, F.C.R. [Pontificia Univ. Catolica do Rio de Janeiro (PUC/Rio), RJ (Brazil)

    2010-07-01

    Varistor is a semiconductor device, used in the protection of electrical systems, characterized to have a high no-linear electric resistance. Its properties are directly dependents of its chemical composition and microstructural characteristics. In this work were analyzed microstructural and electrical characteristics of a ZnO-based varistor doped with rare earth oxide, with chemical composition (mol%) 98,5.ZnO - 0,3.Pr{sub 6}O{sub 11} - 0,2.Dy{sub 2}O{sub 3} - 0,9.Co{sub 2}O{sub 3} - 0,1.Cr{sub 2}O{sub 3}. X-ray diffraction for phase characterization, scanning electron microscopy and energy dispersive X-ray spectroscopy were used for microstructural analysis. Measurement of average grain size and electrical and dielectric characteristics complete the characterization. The results show the formation of biphasic microstructure and with high densification, presenting relevant varistors characteristics but that would need improvements.(author)

  12. Mechanistic analysis of temperature-dependent current conduction through thin tunnel oxide in n+-polySi/SiO2/n+-Si structures

    Science.gov (United States)

    Samanta, Piyas

    2017-09-01

    We present a detailed investigation on temperature-dependent current conduction through thin tunnel oxides grown on degenerately doped n-type silicon (n+-Si) under positive bias ( VG ) on heavily doped n-type polycrystalline silicon (n+-polySi) gate in metal-oxide-semiconductor devices. The leakage current measured between 298 and 573 K and at oxide fields ranging from 6 to 10 MV/cm is primarily attributed to Poole-Frenkel (PF) emission of trapped electrons from the neutral electron traps located in the silicon dioxide (SiO2) band gap in addition to Fowler-Nordheim (FN) tunneling of electrons from n+-Si acting as the drain node in FLOating gate Tunnel OXide Electrically Erasable Programmable Read-Only Memory devices. Process-induced neutral electron traps are located at 0.18 eV and 0.9 eV below the SiO2 conduction band. Throughout the temperature range studied here, PF emission current IPF dominates FN electron tunneling current IFN at oxide electric fields Eox between 6 and 10 MV/cm. A physics based new analytical formula has been developed for FN tunneling of electrons from the accumulation layer of degenerate semiconductors at a wide range of temperatures incorporating the image force barrier rounding effect. FN tunneling has been formulated in the framework of Wentzel-Kramers-Brilloiun taking into account the correction factor due to abrupt variation of the energy barrier at the cathode/oxide interface. The effect of interfacial and near-interfacial trapped-oxide charges on FN tunneling has also been investigated in detail at positive VG . The mechanism of leakage current conduction through SiO2 films plays a crucial role in simulation of time-dependent dielectric breakdown of the memory devices and to precisely predict the normal operating field or applied floating gate (FG) voltage for lifetime projection of the devices. In addition, we present theoretical results showing the effect of drain doping concentration on the FG leakage current.

  13. Electrical, thermal and electrochemical properties of SmBa_1_−_xSr_xCo_2O_5_+_δ cathode materials for intermediate-temperature solid oxide fuel cells

    International Nuclear Information System (INIS)

    Subardi, Adi; Chen, Ching-Cheng; Cheng, Meng-Hsien; Chang, Wen-Ku; Fu, Yen-Pei

    2016-01-01

    The effects of Sr doping on the Ba-site of SmBaCo_2O_5_+_δ in term of structure characteristics, thermal expansion coefficients (TECs), electrical properties and electrochemical performance have been investigated as cathode material for intermediate-temperature solid oxide fuel cells (IT-SOFCs). The TECs of SBSC-based cathodes are calculated from 19.8 − 20.5 × 10"−"6 K"−"1 in the temperature range of 100–800 °C, and the TEC values decrease with increasing Sr content. The oxygen content and the average oxidation state of cobalt increase with increasing Sr content determined by the X-ray photoelectron spectroscopy (XPS) and Thermogravimetry analysis (TGA) results. At a given temperature, the electrical conductivity values are in the order as follows: SBSC55 > SBSC73 > SBSC91. This behavior might be due to the increase in electronic hole. The electrical conductivities of SBSC55 at 600 °C are distributed in the range of 660 S/cm of p(O_2) = 0.01 atm to 1168 S/cm of p(O_2) = 0.21 atm, indicating that the cathode can endure reducing atmosphere. SBSC55 with high electrical conductivity in p(O_2) = 0.01 atm is ascribed to SBSC55 with stable double-perovskite structure at such low oxygen partial pressure. The SBSC55 cathode showed the highest power density of 304 mW/cm"2 at operating temperature of 700 °C. Based on the electrochemical properties, SBSC55 is a potential cathode for IT-SOFCs.

  14. Electrically and Thermally Conductive Low Density Polyethylene-Based Nanocomposites Reinforced by MWCNT or Hybrid MWCNT/Graphene Nanoplatelets with Improved Thermo-Oxidative Stability

    OpenAIRE

    Sandra Paszkiewicz; Anna Szymczyk; Daria Pawlikowska; Jan Subocz; Marek Zenker; Roman Masztak

    2018-01-01

    In this paper, the electrical and thermal conductivity and morphological behavior of low density polyethylene (LDPE)/multi-walled carbon nanotubes (MWCNTs) + graphene nanoplatelets (GNPs) hybrid nanocomposites (HNCs) have been studied. The distribution of MWCNTs and the hybrid of MWCNTs/GNPs within the polymer matrix has been investigated with scanning electron microscopy (SEM). The results showed that the thermal and electrical conductivity of the LDPE-based nanocomposites increased along wi...

  15. The change of electric field and of some other insulating properties during isochronal annealing in thermally poled Ge-doped silica films

    DEFF Research Database (Denmark)

    Liu, Q.M.; Poumellec, B.; Braga, D.

    2005-01-01

    induced electric field and other insulating properties like electron traps population and conductivity in high field. Concerning the change of the contrast at low dose arising from the poling electric field, we show that this field begins to disappear at around 450 degrees C and is erased completely...... at 650 degrees C. Using a larger dose allows measuring the change in conductivity contrast. We find a stability similar to the electric field with a disappearance around 450 similar to 650 degrees C. On the contrary, for intermediate dose, the contrast remains for larger annealing temperature. It allows...

  16. The Microstructures and Electrical Resistivity of (Al, Cr, TiFeCoNiOx High-Entropy Alloy Oxide Thin Films

    Directory of Open Access Journals (Sweden)

    Chun-Huei Tsau

    2015-01-01

    Full Text Available The (Al, Cr, TiFeCoNi alloy thin films were deposited by PVD and using the equimolar targets with same compositions from the concept of high-entropy alloys. The thin films became metal oxide films after annealing at vacuum furnace for a period; and the resistivity of these thin films decreased sharply. After optimum annealing treatment, the lowest resistivity of the FeCoNiOx, CrFeCoNiOx, AlFeCoNiOx, and TiFeCoNiOx films was 22, 42, 18, and 35 μΩ-cm, respectively. This value is close to that of most of the metallic alloys. This phenomenon was caused by delaminating of the alloy oxide thin films because the oxidation was from the surfaces of the thin films. The low resistivity of these oxide films was contributed to the nonfully oxidized elements in the bottom layers and also vanishing of the defects during annealing.

  17. Electrically and Thermally Conductive Low Density Polyethylene-Based Nanocomposites Reinforced by MWCNT or Hybrid MWCNT/Graphene Nanoplatelets with Improved Thermo-Oxidative Stability

    Directory of Open Access Journals (Sweden)

    Sandra Paszkiewicz

    2018-04-01

    Full Text Available In this paper, the electrical and thermal conductivity and morphological behavior of low density polyethylene (LDPE/multi-walled carbon nanotubes (MWCNTs + graphene nanoplatelets (GNPs hybrid nanocomposites (HNCs have been studied. The distribution of MWCNTs and the hybrid of MWCNTs/GNPs within the polymer matrix has been investigated with scanning electron microscopy (SEM. The results showed that the thermal and electrical conductivity of the LDPE-based nanocomposites increased along with the increasing content of carbon nanofillers. However, one could observe greater improvement in the thermal and electrical conductivity when only MWCNTs have been incorporated. Moreover, the improvement in tensile properties and thermal stability has been observed when carbon nanofillers have been mixed with LDPE. At the same time, the increasing content of MWCNTs and MWCNTs/GNPs caused an increase in the melt viscosity with only little effect on phase transition temperatures.

  18. Electrically and Thermally Conductive Low Density Polyethylene-Based Nanocomposites Reinforced by MWCNT or Hybrid MWCNT/Graphene Nanoplatelets with Improved Thermo-Oxidative Stability.

    Science.gov (United States)

    Paszkiewicz, Sandra; Szymczyk, Anna; Pawlikowska, Daria; Subocz, Jan; Zenker, Marek; Masztak, Roman

    2018-04-22

    In this paper, the electrical and thermal conductivity and morphological behavior of low density polyethylene (LDPE)/multi-walled carbon nanotubes (MWCNTs) + graphene nanoplatelets (GNPs) hybrid nanocomposites (HNCs) have been studied. The distribution of MWCNTs and the hybrid of MWCNTs/GNPs within the polymer matrix has been investigated with scanning electron microscopy (SEM). The results showed that the thermal and electrical conductivity of the LDPE-based nanocomposites increased along with the increasing content of carbon nanofillers. However, one could observe greater improvement in the thermal and electrical conductivity when only MWCNTs have been incorporated. Moreover, the improvement in tensile properties and thermal stability has been observed when carbon nanofillers have been mixed with LDPE. At the same time, the increasing content of MWCNTs and MWCNTs/GNPs caused an increase in the melt viscosity with only little effect on phase transition temperatures.

  19. Advanced device for testing the electrical behavior of conductive coatings on flexible polymer substrates under oscillatory bending: comparison of coatings of sputtered indium-tin oxide and poly3,4ethylenedioxythiophene

    International Nuclear Information System (INIS)

    Königer, Tobias; Münstedt, Helmut

    2008-01-01

    A special device was designed and set up to investigate the electrical behavior of conductive layers on flexible substrates under oscillatory bending. The resistance of conductive coatings can be measured during various oscillatory bending conditions. The bending radius, the amplitude and the frequency can be set to well-defined values. Furthermore, the setup allows us to apply tensile or compressive stress to the coating as well as both stresses alternately. Thus, various bending loads occurring in printable electronics applications can be simulated to investigate the electrical reliability of conductive coatings. In addition, it is possible to simulate different environmental conditions during oscillatory bending by running the device in an environmental chamber. Characterizations of the electrical behavior under oscillatory bending were carried out on commercially available polyethyleneterephthalate (PET) films sputtered with indium-tin oxide (ITO) and coated with poly3,4ethylenedioxythiophene (PEDOT). For coatings of sputtered ITO, a dramatic increase of the resistance is observed for bending radii smaller than 14 mm due to cracks spanning the whole sample width. The higher the amplitude, the more pronounced is the increase of the resistance. Coatings of PEDOT show high stability under oscillatory bending. There is no change in resistance observed for all bending radii and amplitudes applied over a large number of cycles

  20. Physical and electrical characteristics of AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistors with rare earth Er2O3 as a gate dielectric

    International Nuclear Information System (INIS)

    Lin, Ray-Ming; Chu, Fu-Chuan; Das, Atanu; Liao, Sheng-Yu; Chou, Shu-Tsun; Chang, Liann-Be

    2013-01-01

    In this study, the rare earth erbium oxide (Er 2 O 3 ) was deposited using an electron beam onto an AlGaN/GaN heterostructure to fabricate metal-oxide-semiconductor high-electron-mobility transistors (MOS–HEMTs) that exhibited device performance superior to that of a conventional HEMT. Under similar bias conditions, the gate leakage currents of these MOS–HEMT devices were four orders of magnitude lower than those of conventional Schottky gate HEMTs. The measured sub-threshold swing (SS) and the effective trap state density (N t ) of the MOS–HEMT were 125 mV/decade and 4.3 × 10 12 cm −2 , respectively. The dielectric constant of the Er 2 O 3 layer in this study was 14, as determined through capacitance–voltage measurements. In addition, the gate–source reverse breakdown voltage increased from –166 V for the conventional HEMT to –196 V for the Er 2 O 3 MOS–HEMT. - Highlights: ► GaN/AlGaN/Er 2 O 3 metal-oxide semiconductor high electron mobility transistor ► Physical and electrical characteristics are presented. ► Electron beam evaporated Er 2 O 3 with excellent surface roughness ► Device exhibits reduced gate leakage current and improved I ON /I OFF ratio