WorldWideScience

Sample records for oxide electrically erasable

  1. Modeling of SONOS Memory Cell Erase Cycle

    Science.gov (United States)

    Phillips, Thomas A.; MacLeod, Todd C.; Ho, Fat H.

    2011-01-01

    Utilization of Silicon-Oxide-Nitride-Oxide-Silicon (SONOS) nonvolatile semiconductor memories as a flash memory has many advantages. These electrically erasable programmable read-only memories (EEPROMs) utilize low programming voltages, have a high erase/write cycle lifetime, are radiation hardened, and are compatible with high-density scaled CMOS for low power, portable electronics. In this paper, the SONOS memory cell erase cycle was investigated using a nonquasi-static (NQS) MOSFET model. Comparisons were made between the model predictions and experimental data.

  2. A new repeatable, optical writing and electrical erasing device based on photochromism and electrochromism of viologen

    International Nuclear Information System (INIS)

    Gao, Li-ping; Wei, Jian; Wang, Yue-chuan; Ding, Guo-jing; Yang, Yu-lin

    2012-01-01

    New optical writing and electrical erasing devices have been successfully fabricated that exploit the photochromism and electrochromism of viologen. In a preliminary study, both the structures of viologen and device were investigated in detail by UV–vis spectra in order to confirm their effects on the optical writing and electrical erasing performances of corresponding devices. For sandwiched, single and complementary devices based on benzyl viologen (BV 2+ ), only optical writing can be performed, not electrical erasing operations, which indicated these devices cannot realize optical information rewriting. For single and complementary devices based on styrene-functional viologen (V BV 2+ ) and acrylic-functional viologen (ACV 2+ ), optical writing and electrical erasing operations can be reversibly performed and optical information rewriting realized. It is clear that single devices based on V BV 2+ and ACV 2+ possess better performance accompanied with contrast without significant degradation and bleaching times and without significant deterioration over 10 repeated writing/erasing cycles. Furthermore, we put forward possible mechanisms for sandwiched, single and complementary devices based on V BV 2+ and ACV 2+ for the optical writing and electrical erasing operations. This study provides a new strategy to design optical writing and electrical erasing devices to realize optical information rewriting. (paper)

  3. Electrically programmable-erasable In-Ga-Zn-O thin-film transistor memory with atomic-layer-deposited Al2O3/Pt nanocrystals/Al2O3 gate stack

    Directory of Open Access Journals (Sweden)

    Shi-Bing Qian

    2015-12-01

    Full Text Available Amorphous indium-gallium-zinc oxide (a-IGZO thin-film transistor (TFT memory is very promising for transparent and flexible system-on-panel displays; however, electrical erasability has always been a severe challenge for this memory. In this article, we demonstrated successfully an electrically programmable-erasable memory with atomic-layer-deposited Al2O3/Pt nanocrystals/Al2O3 gate stack under a maximal processing temperature of 300 oC. As the programming voltage was enhanced from 14 to 19 V for a constant pulse of 0.2 ms, the threshold voltage shift increased significantly from 0.89 to 4.67 V. When the programmed device was subjected to an appropriate pulse under negative gate bias, it could return to the original state with a superior erasing efficiency. The above phenomena could be attributed to Fowler-Nordheim tunnelling of electrons from the IGZO channel to the Pt nanocrystals during programming, and inverse tunnelling of the trapped electrons during erasing. In terms of 0.2-ms programming at 16 V and 350-ms erasing at −17 V, a large memory window of 3.03 V was achieved successfully. Furthermore, the memory exhibited stable repeated programming/erasing (P/E characteristics and good data retention, i.e., for 2-ms programming at 14 V and 250-ms erasing at −14 V, a memory window of 2.08 V was still maintained after 103 P/E cycles, and a memory window of 1.1 V was retained after 105 s retention time.

  4. Electrically programmable-erasable In-Ga-Zn-O thin-film transistor memory with atomic-layer-deposited Al{sub 2}O{sub 3}/Pt nanocrystals/Al{sub 2}O{sub 3} gate stack

    Energy Technology Data Exchange (ETDEWEB)

    Qian, Shi-Bing; Zhang, Wen-Peng; Liu, Wen-Jun; Ding, Shi-Jin, E-mail: sjding@fudan.edu.cn [State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai 200433 (China)

    2015-12-15

    Amorphous indium-gallium-zinc oxide (a-IGZO) thin-film transistor (TFT) memory is very promising for transparent and flexible system-on-panel displays; however, electrical erasability has always been a severe challenge for this memory. In this article, we demonstrated successfully an electrically programmable-erasable memory with atomic-layer-deposited Al{sub 2}O{sub 3}/Pt nanocrystals/Al{sub 2}O{sub 3} gate stack under a maximal processing temperature of 300 {sup o}C. As the programming voltage was enhanced from 14 to 19 V for a constant pulse of 0.2 ms, the threshold voltage shift increased significantly from 0.89 to 4.67 V. When the programmed device was subjected to an appropriate pulse under negative gate bias, it could return to the original state with a superior erasing efficiency. The above phenomena could be attributed to Fowler-Nordheim tunnelling of electrons from the IGZO channel to the Pt nanocrystals during programming, and inverse tunnelling of the trapped electrons during erasing. In terms of 0.2-ms programming at 16 V and 350-ms erasing at −17 V, a large memory window of 3.03 V was achieved successfully. Furthermore, the memory exhibited stable repeated programming/erasing (P/E) characteristics and good data retention, i.e., for 2-ms programming at 14 V and 250-ms erasing at −14 V, a memory window of 2.08 V was still maintained after 10{sup 3} P/E cycles, and a memory window of 1.1 V was retained after 10{sup 5} s retention time.

  5. Perovskite oxides: an atomic force pencil and eraser

    NARCIS (Netherlands)

    Rijnders, Augustinus J.H.M.; Blank, David H.A.

    A method of writing and erasing conducting nanostructures at the interface between the wide-bandgap insulators LaAlO3 and SrTiO3 is presented. New developments for ltrahigh-density information storage look feasible

  6. Direct comparison of the electrical properties in metal/oxide/nitride/oxide/silicon and metal/aluminum oxide/nitride/oxide/silicon capacitors with equivalent oxide thicknesses

    Energy Technology Data Exchange (ETDEWEB)

    An, Ho-Myoung; Seo, Yu Jeong; Kim, Hee Dong; Kim, Kyoung Chan; Kim, Jong-Guk [School of Electrical Engineering, Korea University, Seoul 136-713 (Korea, Republic of); Cho, Won-Ju; Koh, Jung-Hyuk [Department of Electronic Materials Engineering, Kwangwoon University, Seoul 139-701 (Korea, Republic of); Sung, Yun Mo [Department of Materials and Science Engineering, Korea University, Seoul 136-713 (Korea, Republic of); Kim, Tae Geun, E-mail: tgkim1@korea.ac.k [School of Electrical Engineering, Korea University, Seoul 136-713 (Korea, Republic of)

    2009-07-31

    We examine the electrical properties of metal/oxide/nitride/oxide/silicon (MONOS) capacitors with two different blocking oxides, SiO{sub 2} and Al{sub 2}O{sub 3}, under the influence of the same electric field. The thickness of the Al{sub 2}O{sub 3} layer is set to 150 A, which is electrically equivalent to a thickness of the SiO{sub 2} layer of 65 A, in the MONOS structure for this purpose. The capacitor with the Al{sub 2}O{sub 3} blocking layer shows a larger capacitance-voltage memory window of 8.6 V, lower program voltage of 7 V, faster program/erase speeds of 10 ms/1 {mu}s, lower leakage current of 100 pA and longer data retention than the one with the SiO{sub 2} blocking layer does. These improvements are attributed to the suppression of the carrier transport to the gate electrode afforded by the use of an Al{sub 2}O{sub 3} blocking layer physically thicker than the SiO{sub 2} one, as well as the effective charge-trapping by Al{sub 2}O{sub 3} at the deep energy levels in the nitride layer.

  7. Memory characteristics of Au nanocrystals embedded in metal-oxide-semiconductor structure by using atomic-layer-deposited Al2O3 as control oxide

    International Nuclear Information System (INIS)

    Wang, C.-C.; Chiou, Y.-K.; Chang, C.-H.; Tseng, J.-Y.; Wu, L.-J.; Chen, C.-Y.; Wu, T.-B.

    2007-01-01

    The nonvolatile memory characteristics of metal-oxide-semiconductor (MOS) structures containing Au nanocrystals in the Al 2 O 3 /SiO 2 matrix were studied. In this work, we have demonstrated that the use of Al 2 O 3 as control oxide prepared by atomic-layer-deposition enhances the erase speed of the MOS capacitors. A giant capacitance-voltage hysteresis loop and a very short erase time which is lower than 1 ms can be obtained. Compared with the conventional floating-gate electrically erasable programmable read-only memories, the erase speed was promoted drastically. In addition, very low leakage current and large turn-around voltage resulting from electrons or holes stored in the Au nanocrystals were found in the current-voltage relation of the MOS capacitors

  8. The quantum self-eraser

    International Nuclear Information System (INIS)

    Martinez-Linares, Jesus; Vargas-Medina, Julio

    2004-01-01

    A scheme for an atomic beam quantum self-eraser is presented. The proposal is based on time reversal invariance on a quantum optical Ramsey fringe experiment, where a realization of complementarity for atomic coherence can be achieved. It consists of two high-finesse resonators that are pumped and probed by the same atom. This property relates quantum erasing to time reversal symmetry, allowing for a full quantum erasing of the which-way information stored in the cavity fields. The outlined scheme also prepares and observes a non-local state in the fields of the resonators: a coherent superposition between correlated states of macroscopically separated quantum systems. The proposed scheme emphasizes the role of entanglement swapping in delayed-choice experiments

  9. Write/erase time of nanoseconds in quantum dot based memory structures

    International Nuclear Information System (INIS)

    Nowozin, Tobias; Marent, Andreas; Geller, Martin; Bimberg, Dieter

    2008-01-01

    We have developed a novel charge-storage memory concept based on III-V semiconductor quantum dots (QDs) which has a number of fundamental advantages over conventional Si/SiO 2 floating gate memories (Flash): material-tunable and voltage-tunable barriers for improved intrinsic speed and/or storage time and high endurance. To investigate the potential of this new memory concept we have determined intrinsic write/erase times in memory structures based on InAs/GaAs and GaSb/GaAs QDs using capacitance-voltage spectroscopy. We measured a write time below 15 ns independent of the localization energy (i.e. the storage time) of the QDs. This write time is more than three orders of magnitude faster than in a Flash cell and already below the write time of a dynamic random access memory (DRAM). The erase time was determined to be 42 ns for InAs/GaAs QDs and 1.5 ms for GaSb/GaAs QDs for applied electric fields of 166 kV/cm and 206 kV/cm, respectively. From these results we derive an erase time of 1 ns in GaSb QDs for an electric field of 330 kV/cm

  10. Distribution of sizes of erased loops for loop-erased random walks

    OpenAIRE

    Dhar, Deepak; Dhar, Abhishek

    1997-01-01

    We study the distribution of sizes of erased loops for loop-erased random walks on regular and fractal lattices. We show that for arbitrary graphs the probability $P(l)$ of generating a loop of perimeter $l$ is expressible in terms of the probability $P_{st}(l)$ of forming a loop of perimeter $l$ when a bond is added to a random spanning tree on the same graph by the simple relation $P(l)=P_{st}(l)/l$. On $d$-dimensional hypercubical lattices, $P(l)$ varies as $l^{-\\sigma}$ for large $l$, whe...

  11. Quality Assessment of the Physico-Mechanical and Elemental Composition of Three Pencil Grades and Eraser Types Produced in Nigeria

    Directory of Open Access Journals (Sweden)

    K. I. Omoniyi

    2014-06-01

    Full Text Available The quality assessment of the physical (pH, electrical conductivity, density, writeability, eraseability, mechanical (compression test and break strength and elemental composition of the pencil grades HB, 2B and 3B and eraser types of brand names Ben 10, Tiky 20 and the commonest White eraser in Nigerian primary school (Gummes Co. China was carried out. The diameter of the graphite part increased in the order HB Cr > Cd. Though, the levels of the trace metals and essential elements detected in the school items are below the recommended limits, regulatory measures should be directed towards maintaining the standards of school items.

  12. A Method of Erasing Data Using Random Number Generators

    OpenAIRE

    井上,正人

    2012-01-01

    Erasing data is an indispensable step for disposal of computers or external storage media. Except physical destruction, erasing data means writing random information on entire disk drives or media. We propose a method which erases data safely using random number generators. These random number generators create true random numbers based on quantum processes.

  13. A low-voltage flash memory cell utilizing the gate-injection program/erase method with a recessed channel structure

    International Nuclear Information System (INIS)

    Wu Dake; Huang Ru; Wang Pengfei; Tang Poren; Wang Yangyuan

    2008-01-01

    In this paper, a low-voltage recessed channel SONOS flash memory using the gate-injection program/erase method is proposed and investigated for NAND application. It is shown that the proposed flash memory can achieve 8 V lower programming voltage compared with planar flash memory, due to the effective capacitance coupling and the electric-field enhancement by combining the recessed channel structure and the gate-injection program/erase method. In addition, more than 30% larger threshold voltage window and improved short channel effects can be obtained in the proposed flash memory

  14. Light-erasable embedded charge-trapping memory based on MoS2 for system-on-panel applications

    Science.gov (United States)

    He, Long-Fei; Zhu, Hao; Xu, Jing; Liu, Hao; Nie, Xin-Ran; Chen, Lin; Sun, Qing-Qing; Xia, Yang; Wei Zhang, David

    2017-11-01

    The continuous scaling and challenges in device integrations in modern portable electronic products have aroused many scientific interests, and a great deal of effort has been made in seeking solutions towards a more microminiaturized package assembled with smaller and more powerful components. In this study, an embedded light-erasable charge-trapping memory with a high-k dielectric stack (Al2O3/HfO2/Al2O3) and an atomically thin MoS2 channel has been fabricated and fully characterized. The memory exhibits a sufficient memory window, fast programming and erasing (P/E) speed, and high On/Off current ratio up to 107. Less than 25% memory window degradation is observed after projected 10-year retention, and the device functions perfectly after 8000 P/E operation cycles. Furthermore, the programmed device can be fully erased by incident light without electrical assistance. Such excellent memory performance originates from the intrinsic properties of two-dimensional (2D) MoS2 and the engineered back-gate dielectric stack. Our integration of 2D semiconductors in the infrastructure of light-erasable charge-trapping memory is very promising for future system-on-panel applications like storage of metadata and flexible imaging arrays.

  15. Extraction of sub-gap density of states via capacitance-voltage measurement for the erasing process in a TFT charge-trapping memory

    Science.gov (United States)

    Chiang, Yen-Chang; Hsiao, Yang-Hsuan; Li, Jeng-Ting; Chen, Jen-Sue

    2018-02-01

    Charge-trapping memories (CTMs) based on zinc tin oxide (ZTO) semiconductor thin-film transistors (TFTs) can be programmed by a positive gate voltage and erased by a negative gate voltage in conjunction with light illumination. To understand the mechanism involved, the sub-gap density of states associated with ionized oxygen vacancies in the ZTO active layer is extracted from optical response capacitance-voltage (C-V) measurements. The corresponding energy states of ionized oxygen vacancies are observed below the conduction band minimum at approximately 0.5-1.0 eV. From a comparison of the fitted oxygen vacancy concentration in the CTM-TFT after the light-bias erasing operation, it is found that the pristine-erased device contains more oxygen vacancies than the program-erased device because the trapped electrons in the programmed device are pulled into the active layer and neutralized by the oxygen vacancies that are present there.

  16. Oxide-nitride-oxide dielectric stacks with Si nanoparticles obtained by low-energy ion beam synthesis

    International Nuclear Information System (INIS)

    Ioannou-Sougleridis, V; Dimitrakis, P; Vamvakas, V Em; Normand, P; Bonafos, C; Schamm, S; Mouti, A; Assayag, G Ben; Paillard, V

    2007-01-01

    Formation of a thin band of silicon nanoparticles within silicon nitride films by low-energy (1 keV) silicon ion implantation and subsequent thermal annealing is demonstrated. Electrical characterization of metal-insulator-semiconductor capacitors reveals that oxide/Si-nanoparticles-nitride/oxide dielectric stacks exhibit enhanced charge transfer characteristics between the substrate and the silicon nitride layer compared to dielectric stacks using unimplanted silicon nitride. Attractive results are obtained in terms of write/erase memory characteristics and data retention, indicating the large potential of the low-energy ion-beam-synthesis technique in SONOS memory technology

  17. Quantum erasers and probing classifications of entanglement via nuclear magnetic resonance

    International Nuclear Information System (INIS)

    Teklemariam, G.; Fortunato, E.M.; Pravia, M.A.; Sharf, Y.; Havel, T.F.; Cory, D.G.; Bhattaharyya, A.; Hou, J.

    2002-01-01

    We report the implementation of two- and three-spin quantum erasers using nuclear magnetic resonance (NMR). Quantum erasers provide a means of manipulating quantum entanglement, an important resource for quantum information processing. Here, we first use a two-spin system to illustrate the essential features of quantum erasers. The extension to a three-spin 'disentanglement eraser' shows that entanglement in a subensemble can be recovered if a proper measurement of the ancillary system is carried out. Finally, we use the same pair of orthogonal decoherent operations used in quantum erasers to probe the two classes of entanglement in tripartite quantum systems: the Greenberger-Horne-Zeilinger state and the W state. A detailed presentation is given of the experimental decoherent control methods that emulate the loss of phase information in strong measurements, and the use of NMR decoupling techniques to implement partial trace operations

  18. Depigmentation and hypertrophic scars after application of a fluid lactic acid tattoo eraser.

    Science.gov (United States)

    Wollina, Uwe

    2015-05-01

    Tattoo removal is often requested by patients. The gold standard is laser tattoo removal that can be time- and cost-intensive. Therefore, safe alternatives without lasers, pain, and scars would be desirable. We wanted to address safety of chemical tattoo erasers. We report a case of depigmentation and hypertrophic scars after use of a chemical tattoo eraser and searched the literature. Chemical tattoo erasers are not only used by physicians, but also nonmedical professionals such as beauticians, tattoo artists, and others. The case report we observed and other cases from the literature suggest that lactic acid based tattoo erasers are risky. Available safety data are unsufficient to recommend such procedure as an alternative to current laser therapy. Chemical tattoo erasers based on lactic acid may be capable to remove tattoo ink but the procedure bears safety risks of permanent adverse effects. For the safety of patients, better regulations for tattoo erasers need to be implemented. Patients need to be informed about adverse effects by such procedures.

  19. Flash Memory Reliability: Read, Program, and Erase Latency Versus Endurance Cycling

    Science.gov (United States)

    Heidecker, Jason

    2010-01-01

    This report documents the efforts and results of the fiscal year (FY) 2010 NASA Electronic Parts and Packaging Program (NEPP) task for nonvolatile memory (NVM) reliability. This year's focus was to measure latency (read, program, and erase) of NAND Flash memories and determine how these parameters drift with erase/program/read endurance cycling.

  20. Quantum eraser for three-slit interference

    Indian Academy of Sciences (India)

    Naveed Ahmad Shah

    2017-11-09

    Nov 9, 2017 ... Abstract. It is well known that in a two-slit interference experiment, if the information, on which of the two paths the particle followed, is stored in a quantum path detector, the interference is destroyed. However, in a set-up where this path information is 'erased', the interference can reappear. Such a set-up is ...

  1. Synthesis and electrical characterization of Graphene Oxide films

    International Nuclear Information System (INIS)

    Yasin, Muhammad; Tauqeer, T.; Zaidi, Syed M.H.; San, Sait E.; Mahmood, Asad; Köse, Muhammet E.; Canimkurbey, Betul; Okutan, Mustafa

    2015-01-01

    In this work, we have synthesized Graphene Oxide (GO) using modified Hummers method and investigated its electrical properties using parallel plate impedance spectroscopic technique. Graphene Oxide films were prepared using drop casting method on Indium Tin Oxide (ITO) coated glass substrate. Atomic force microscopy was used to characterize the films' microstructure and surface topography. Electrical characterization was carried out using LCR meter in frequency regime (100 Hz to 10 MHz) at different temperatures. AC conductivity σ ac of the films was observed to be varied with angular frequency, ω as ω S , with S < 1. The electrical properties of GO were found to be both frequency and temperature dependent. Analysis showed that GO film contains direct current (DC) and Correlated Barrier Hopping (CBH) conductivity mechanisms at low and high frequency ranges, respectively. Photon absorption and transmittance capability in the visible range and excellent electrical parameters of solution processed Graphene Oxide suggest its suitability for the realization of low cost flexible organic solar cells and organic Thin Film Transistors, respectively. - Highlights: • Synthesize and electrical characterization of Graphene Oxide (GO) Film was undertaken. • Temperature dependent impedance spectroscopy was used for electrical analysis. • AFM was used to characterize films' microstructure and surface topography. • Electrical parameters were found to vary with both temperature and frequency. • GO showed DC and CBH conductivity mechanisms at low and high frequency, respectively

  2. Quantum eraser and the decoherence time of a local measurement process

    International Nuclear Information System (INIS)

    Abranyos, Y.; Jakob, M.; Bergou, J.

    1998-01-01

    We propose an implementation of the quantum eraser, based on a recent experimental scheme by Eichmann et al. involving two four-level atoms. In our version a continuous broad band excitation field drives the two trapped atoms and information about which atom scattered the light is stored in the internal degrees of freedom of the atoms. Entanglement of the two atoms after the detection of the photon is intimately connected to the availability of this 'which path' information. We also show that the quantum eraser can be used to measure the decoherence time of a local measurement process. (author)

  3. Charge trapping characteristics of Au nanocrystals embedded in remote plasma atomic layer-deposited Al2O3 film as the tunnel and blocking oxides for nonvolatile memory applications

    International Nuclear Information System (INIS)

    Lee, Jaesang; Kim, Hyungchul; Park, Taeyong; Ko, Youngbin; Ryu, Jaehun; Jeon, Heeyoung; Park, Jingyu; Jeon, Hyeongtag

    2012-01-01

    Remote plasma atomic layer deposited (RPALD) Al 2 O 3 films were investigated to apply as tunnel and blocking layers in the metal-oxide-semiconductor capacitor memory utilizing Au nanocrystals (NCs) for nonvolatile memory applications. The interface stability of an Al 2 O 3 film deposited by RPALD was studied to observe the effects of remote plasma on the interface. The interface formed during RPALD process has high oxidation states such as Si +3 and Si +4 , indicating that RPALD process can grow more stable interface which has a small amount of fixed oxide trap charge. The significant memory characteristics were also observed in this memory device through the electrical measurement. The memory device exhibited a relatively large memory window of 5.6 V under a 10/-10 V program/erase voltage and also showed the relatively fast programming/erasing speed and a competitive retention characteristic after 10 4 s. These results indicate that Al 2 O 3 films deposited via RPALD can be applied as the tunnel and blocking oxides for next-generation flash memory devices.

  4. Optically erasable and rewritable solid-state holograms.

    Science.gov (United States)

    Gaylord, T. K.; Rabson, T. A.; Tittel, F. K.

    1972-01-01

    Optical holographic storage in single-crystal LiNbO3 is described which can be optically erased at room temperature and then rewritten with no degradation in efficiency or writing rate. The diffraction efficiencies associated with the process are about 0.0001. Some variations from previously obtained results include a lack of threshold power density for writing, very-long-term persistence of the stored hologram, and a lack of a dependence of the diffracted intensity on the polarization of the readout beam.

  5. Different types of inks having certain medicolegal importance: Deciphering the faded and physically erased handwriting

    Directory of Open Access Journals (Sweden)

    Manal Abd-ElAziz Abd-ElZaher

    2014-06-01

    Full Text Available Disappearing ink is a type of ink which could be used to forge documents as it will fade away without any trace within 40–65 h. Erasable ink is another type of ink easily removed by certain rubbers incorporated in each pen. Both types of inks were applied separately on different types of papers (checks, standard white foolscap, and plain white A4 paper. For vanishing ink, it was observed visually in the first 6 h and then every 6 h. It was found that the vanishing ink disappeared completely within 2 h on checks, 36 h on standard white foolscap paper, and 40 h on plain white A4 paper. For erasable ink, the written strokes were manipulated manually using the incorporated eraser. Deciphering the faded writing failed by the conventional methods, but oblique light can reveal the indentation marks. The faded writing became visible when treated with weak alkaline (NaOH solutions. Erasable ink was deciphered with the aid of infra-red radiation combined with VSC-6000 as clear white traces against red fluorescence. It was concluded that the use of a weak (NaOH solution is an effective method for revealing the faded writing, and the infra-red illumination is also effective.

  6. Laser induced Erasable Patterns in a N* Liquid Crystal on an Iron Doped Lithium Niobate (Postprint)

    Science.gov (United States)

    2017-10-12

    4685; Clearance Date: 22 Sep 2017. This document contains color . Journal article published in Optics Express, Vol. 25, No. 21, 22 Sep 2017. © 2017...be applied selectively to erase these patterns. Thus, a promising method is reported to generate reconfigurable patterns, photonic motives , and...erase these patterns. Thus, a promising method is reported to generate reconfigurable patterns, photonic motives , and touch sensitive devices in a

  7. Effective Dosage of Midazolam to Erase the Memory of Vascular Pain During Propofol Administration.

    Science.gov (United States)

    Boku, Aiji; Inoue, Mika; Hanamoto, Hiroshi; Oyamaguchi, Aiko; Kudo, Chiho; Sugimura, Mitsutaka; Niwa, Hitoshi

    Intravenous sedation with propofol is often administered to anxious patients in dental practice. Pain on injection of propofol is a common adverse effect. This study aimed to determine the age-adjusted doses of midazolam required to erase memory of vascular pain of propofol administration and assess whether the Ramsay Sedation Scale (RSS) after the pretreatment of midazolam was useful to predict amnesia of the vascular pain of propofol administration. A total of 246 patients with dental phobia requiring dental treatment under intravenous sedation were included. Patients were classified according to their age: 30s, 40s, 50s, and 60s. Three minutes after administration of a predetermined dose of midazolam, propofol was infused continuously. After completion of the dental procedure, patients were interviewed about the memory of any pain or discomfort in the injection site or forearm. The dosage of midazolam was determined using the Dixon up-down method. The first patient was administered 0.03 mg/kg, and if memory of vascular pain remained, the dosage was increased by 0.01 mg/kg for the next patient, and then if the memory was erased, the dosage was decreased by 0.01 mg/kg. The effective dosage of midazolam in 95% of each age group for erasing the memory of propofol vascular pain (ED95) was determined using logistic analysis. The accuracy of RSS to predict the amnesia of injection pain was assessed by receiver operating characteristic (ROC) analysis. The ED95 of midazolam to erase the memory of propofol vascular pain was 0.061 mg/kg in patients in their 30s, 0.049 mg/kg in patients in their 40s, 0.033 mg/kg in patients in their 50s, and 0.033 mg/kg in patients in their 60s. The area under the ROC curve was 0.31. The ED95 of midazolam required to erase the memory of propofol vascular pain demonstrated a downward trend with age. On the other hand, it was impossible to predict the amnesia of propofol vascular pain using the RSS.

  8. Electrical current mediated interconversion between graphene oxide to reduced grapene oxide

    Science.gov (United States)

    Teoh, H. F.; Tao, Y.; Tok, E. S.; Ho, G. W.; Sow, C. H.

    2011-04-01

    In this work, we demonstrate that graphene oxide (GO) can be reversibly converted to reduced-graphene-oxide (rGO) through the use of electric current. Strong electric field could cause ionization of water molecules in air to generate H+ ions at cathode, causing GO to be reduced. When the bias is reversed, the same electrode becomes positive and OH- ions are produced. According to Le Chatelier Principle, it then favors the reverse reaction, converting rGO back to GO, GO+2H++2e-=>rGO+H2O. X-ray spectroscopy and Raman spectroscopy were carried to verify the conversion reversibility in the reversed process.

  9. Eraser-based eco-friendly fabrication of a skin-like large-area matrix of flexible carbon nanotube strain and pressure sensors.

    Science.gov (United States)

    Sahatiya, Parikshit; Badhulika, Sushmee

    2017-03-03

    This paper reports a new type of electronic, recoverable skin-like pressure and strain sensor, produced on a flexible, biodegradable pencil-eraser substrate and fabricated using a solvent-free, low-cost and energy efficient process. Multi-walled carbon nanotube (MWCNT) film, the strain sensing element, was patterned on pencil eraser with a rolling pin and a pre-compaction mechanical press. This induces high interfacial bonding between the MWCNTs and the eraser substrate, which enables the sensor to achieve recoverability under ambient conditions. The eraser serves as a substrate for strain sensing, as well as acting as a dielectric for capacitive pressure sensing, thereby eliminating the dielectric deposition step, which is crucial in capacitive-based pressure sensors. The strain sensing transduction mechanism is attributed to the tunneling effect, caused by the elastic behavior of the MWCNTs and the strong mechanical interlock between MWCNTs and the eraser substrate, which restricts slippage of MWCNTs on the eraser thereby minimizing hysteresis. The gauge factor of the strain sensor was calculated to be 2.4, which is comparable to and even better than most of the strain and pressure sensors fabricated with more complex designs and architectures. The sensitivity of the capacitive pressure sensor was found to be 0.135 MPa -1 .To demonstrate the applicability of the sensor as artificial electronic skin, the sensor was assembled on various parts of the human body and corresponding movements and touch sensation were monitored. The entire fabrication process is scalable and can be integrated into large areas to map spatial pressure distributions. This low-cost, easily scalable MWCNT pin-rolled eraser-based pressure and strain sensor has huge potential in applications such as artificial e-skin in flexible electronics and medical diagnostics, in particular in surgery as it provides high spatial resolution without a complex nanostructure architecture.

  10. Effects of tunnel oxide process on SONOS flash memory characteristics

    International Nuclear Information System (INIS)

    Li, Dong Hua; Park, Il Han; Yun, Jang-Gn; Park, Byung-Gook

    2010-01-01

    In this paper, various process conditions of tunnel oxides are applied in SONOS flash memory to investigate their effects on charge transport during the program/erase operations. We focus the key point of analysis on Fermi-level (E F ) variation at the interface of silicon substrate and tunnel oxide. The Si-O chemical bonding information which describes the interface oxidation states at the Si/SiO 2 is obtained by the core-level X-ray photoelectron spectroscopy (XPS). Moreover, relative E F position is determined by measuring the Si 2p energy shift from XPS spectrums. Experimental results from memory characteristic measurement show that MTO tunnel oxide structure exhibits faster erase speed, and larger memory window during P/E cycle compared to FTO and RTO tunnel oxide structures. Finally, we examine long-term charge retention characteristic and find that the memory windows of all the capacitors remain wider than 2 V after 10 5 s.

  11. Electrical impedance studies of uranium oxide

    International Nuclear Information System (INIS)

    Hampton, R.N.

    1986-11-01

    The thesis presents data on the electrical properties of uranium oxide at temperatures from 1700K to 4.2K, and pressures between 25 K bar and 70 K bar. The impedance data were analysed using the technique of complex plane representation to establish the conductivity and dielectric constant of uranium dioxide. The thermophysical data were compared with previously reported experimental and theoretical work on uranium dioxide and other fluorite structured oxides. (U.K.)

  12. Color Image Secret Watermarking Erase and Write Algorithm Based on SIFT

    Science.gov (United States)

    Qu, Jubao

    The use of adaptive characteristics of SIFT, image features, the implementation of the write, erase operations on Extraction and color image hidden watermarking. From the experimental results, this algorithm has better imperceptibility and at the same time, is robust against geometric attacks and common signal processing.

  13. Electrical and optical properties of zinc oxide: thin films

    International Nuclear Information System (INIS)

    Zuhairusnizam Md Darus; Abdul Jalil Yeop Majlis; Anis Faridah Md Nor; Burhanuddin Kamaluddin

    1992-01-01

    Zinc oxide films have been prepared by high temperature oxidation of thermally evaporated zinc films on glass substrates. The resulting films are characterized using X-ray diffraction, optical absorption and electrical conductivity measurements. These zinc oxide films are very transparent and photoconductive

  14. Comparison of properties of silver-metal oxide electrical contact materials

    Directory of Open Access Journals (Sweden)

    Ćosović V.

    2012-01-01

    Full Text Available Changes in physical properties such as density, porosity, hardness and electrical conductivity of the Ag-SnO2 and Ag-SnO2In2O3 electrical contact materials induced by introduction of metal oxide nanoparticles were investigated. Properties of the obtained silver-metal oxide nanoparticle composites are discussed and presented in comparison to their counterparts with the micro metal oxide particles as well as comparable Ag-SnO2WO3 and Ag-ZnO contact materials. Studied silvermetal oxide composites were produced by powder metallurgy method from very fine pure silver and micro- and nanoparticle metal oxide powders. Very uniform microstructures were obtained for all investigated composites and they exhibited physical properties that are comparable with relevant properties of equivalent commercial silver based electrical contact materials. Both Ag-SnO2 and Ag- SnO2In2O3 composites with metal oxide nanoparticles were found to have lower porosity, higher density and hardness than their respective counterparts which can be attributed to better dispersion hardening i.e. higher degree of dispersion of metal oxide in silver matrix.

  15. Effects of iron content on electrical resistivity of oxide films on Zr-base alloys

    International Nuclear Information System (INIS)

    Kubo, Toshio; Uno, Masayoshi

    1991-01-01

    Measurements of electrical resistivity were made for oxide films formed by anodic oxidation and steam oxidation (400degC/12 h) on Zr plates with different Fe contents. When the Fe content was higher than about 1,000 ppm the electrical resistivity of the steam oxide films was almost equivalent to that of the anodic oxide films, while at lower Fe content the former exhibited lower electrical resistivity than the latter by about 1∼3 orders of magnitude. The anodic oxide film was an almost homogeneous single oxide layer. The steam oxide films, on the other hand, were composed of duplex oxide layers. The oxide layer formed in the vicinity of the oxide/metal interface had higher electrical resistivity than the near-surface oxide layer by about 1∼4 orders of magnitude. The oxide layer in the vicinity of the interface could act as a protective film against corrosion and its electrical resistivity is one important factor controlling the layer protectiveness. The electrical resistivity of the oxide/metal interfacial layer was strongly dependent on the Fe content. One possible reason for Fe to improve the corrosion resistance is that Fe ions would tend to stabilize the tetragonal (or cubic) phase and consequently suppress the formation of open pores and cracks in the interfacial layer. (author)

  16. Beyond extinction: erasing human fear responses and preventing the return of fear

    NARCIS (Netherlands)

    Kindt, M.; Soeter, M.; Vervliet, B.

    2009-01-01

    Animal studies have shown that fear memories can change when recalled, a process referred to as reconsolidation. We found that oral administration of the beta-adrenergic receptor antagonist propranolol before memory reactivation in humans erased the behavioral expression of the fear memory 24 h

  17. Structural and electrical characterization of zinc oxide doped with antimony

    Directory of Open Access Journals (Sweden)

    G. Juárez Díaz

    2014-08-01

    Full Text Available In this work we report the results of structural and electrical characterization realized on zinc oxide single crystal samples with (001 orientation, which were doped with antimony. Doping was carried out by antimony thermal diffusion at 1000 °C for periods of 1 and 2 hours under nitrogen environment from a solid source formed by antimony oxide. Electrical characterization by I-V curves and Hall effect shown an increase in acceptor concentration which demonstrates that doping is effective and create holes in zinc oxide samples.

  18. Processing and properties of silver-metal oxide electrical contact materials

    Directory of Open Access Journals (Sweden)

    Nadežda M. Talijan

    2012-12-01

    Full Text Available The presented study gives a brief overview of the experimental results of investigations of different production technologies of silver-metal oxide electrical contact materials in relation: processing method - properties. The two most common routes of production, i.e. internal oxidation/ingot metallurgy and powder metallurgy are demonstrated on the example of Ag-CdO and Ag-ZnO materials. For illustration of alternative processing routes that provide higher dispersion of metal-oxide particles in silver matrix more environmentally friendly Ag-SnO2 contact materials are used. Processing of electrical contact materials by mechanical mixing of starting powders in high energy ball mill is presented. The obtained experimental results of application of different methods of introduction of SnO2 nanoparticles in the silver matrix such as conventional powder metallurgy mixing and template method are given and discussed in terms of their influence on microstructure and physical properties (density, hardness and electrical conductivity of the prepared Ag-SnO2 electrical contact materials.

  19. Electrical Transport Ability of Nanostructured Potassium-Doped Titanium Oxide Film

    Science.gov (United States)

    Lee, So-Yoon; Matsuno, Ryosuke; Ishihara, Kazuhiko; Takai, Madoka

    2011-02-01

    Potassium-doped nanostructured titanium oxide films were fabricated using a wet corrosion process with various KOH solutions. The doped condition of potassium in TiO2 was confirmed by Raman spectroscopy and X-ray photoelectron spectroscopy (XPS). Nanotubular were synthesized at a dopant concentration of 0.27%, these structures disappeared. To investigate the electrical properties of K-doped TiO2, pseudo metal-oxide-semiconductor field-effect transistor (MOSFET) samples were fabricated. The samples exhibited a distinct electrical behavior and p-type characteristics. The electrical behavior was governed by the volume of the dopant when the dopant concentration was 0.18%.

  20. An electrically reprogrammable 1024 bits MNOS ROM using MNOS-SOS e/d technology

    International Nuclear Information System (INIS)

    Mackowiak, E.; Le Goascoz, V.

    1976-01-01

    A 1024 bits fully decoded electrically writable and erasable non volatile ROM is described. Memory cells and peripheral circuits are made using P channel silicon on sapphire enhancement depletion technology [fr

  1. Thermo-electric oxidization of iron in lithium niobate crystals

    International Nuclear Information System (INIS)

    Falk, Matthias

    2007-01-01

    Lithium niobate crystals (LiNbO 3 ) are a promising material for nonlinear-optical applications like frequency conversion to generate visible light, e.g., in laser displays, but their achievable output power is greatly limited by the ''optical damage'', i.e., light-induced refractive-index changes caused by excitation of electrons from iron impurities and the subsequent retrapping in unilluminated areas of the crystal. The resulting space-charge fields modify the refractive indices due to the electro-optic effect. By this ''photorefractive effect'' the phase-matching condition, i.e., the avoidance of destructive interference between light generated at different crystal positions due to the dispersion of the fundamental wave and the converted wave, is disturbed critically above a certain light intensity threshold. The influence of annealing treatments conducted in the presence of an externally applied electric field (''thermo-electric oxidization'') on the valence state of iron impurities and thereby on the optical damage is investigated. It is observed that for highly iron-doped LiNbO 3 crystals this treatment leads to a nearly complete oxidization from Fe 2+ to Fe 3+ indicated by the disappearance of the absorption caused by Fe 2+ . During the treatment an absorption front forms that moves through the crystal. The absorption in the visible as well as the electrical conductivity are decreased by up to five orders of magnitude due to this novel treatment. The ratio of the Fe 2+ concentration to the total iron concentration - a measure for the strength of the oxidization - is in the order of 10 -6 for oxidized crystals whereas it is about 10 -1 for untreated samples. Birefringence changes are observed at the absorption front that are explained by the removal of hydrogen and lithium ions from the crystal that compensate for the charges of the also removed electrons from Fe 2+ . A microscopic shock-wave model is developed that explains the observed absorption front by

  2. Doubly tagged delayed-choice tunable quantum eraser: coherence, information and measurement

    Science.gov (United States)

    Imran, Muhammad; Tariq, Hinna; Rameez-ul-Islam; Ikram, Manzoor

    2018-01-01

    We present an idea for the doubly tagged delayed-choice tunable quantum eraser in a cavity QED setup, based on fully controlled resonant as well as dispersive atom-field interactions. Two cavity fields, bound initially in the Bell state, are coupled to a three-level atom. Such an atom is initially prepared in the coherent superposition of the lower two levels and is quite capable of exhibiting Ramsey fringes if taken independently. It is shown that the coherence lost due to tagging can not only be retrieved but that the fringe visibility/path distinguishability can also be conditionally tuned in a delayed manner through local manipulation of the entangled cavity fields. The stringent condition here is the retainment of the system’s coherence during successive manipulations of the individual cavity fields. Such a quantum eraser, therefore, prominently highlights the links among all the counterintuitive features of quantum theory including the conception of time, measurement, state vector reduction, coherence and information in an unambiguous manner. The schematics can be straightforwardly extended to a multipartite scenario and employed to explore multi-player quantum games with the payoff being strangely decided through delayed choice setups.

  3. Action Movie in Election Day: Eraser (1996, Arnold Chwarzenegger and Other Politics Medias

    Directory of Open Access Journals (Sweden)

    Fabro Boaz Steibel

    2008-08-01

    Full Text Available This article aims to explore methodological frontiers between movie theory and political ommunication studies. When identifying traces of how politics, art and entertainment interact, it is possible to understand how movie celebrities can act as politicians, and vice versa. Arnold Schwarzenegger is a world famous actor who has twice won the Californian gubernatorial election. The principal purpose of this article is not to discuss political spectacle or analyse Schwarzenegger’s approach to government. The idea is to understand how a film in which Schwarzenegger starred over a decade ago (Eraser, 1996 has influenced his campaign image construction. The article’s methodological basis is a collective text by the Editors of Cahiers du Cinéma, based on John Ford’s Young Mr. Lincoln (1939. Its methodology allows us to observe important characteristics of Schwarzenegger’s role in the Eraser movie, which are then compared to the 2002 election scenario.

  4. Incorporation of polydimethylsiloxane with reduced graphene oxide and zinc oxide for tensile and electrical properties

    Science.gov (United States)

    Danial, N. S.; Ramli, Muhammad. M.; Halin, D. S. C.; Hong, H. C.; Isa, S. Salwa M.; Abdullah, M. M. A. B.; Anhar, N. A. M.; Talip, L. F. A.; Mazlan, N. S.

    2017-09-01

    Polydimethylsiloxane (PDMS) is an organosilicon polymer that is commonly used to incorporate with other fillers. PDMS in high viscous liquid form is mechanically stirred with reduced graphene oxide (rGO) and mixed with zinc oxide (ZnO) with specific ratio, thus rendering into two types of samples. The mechanical and electrical properties of both samples are characterized. The result shows that PDMS sample with 50 mg rGO has the highest tensile strength with the value of 9.1 MPa. For electrical properties, sample with the lowest resistance is PDMS with 50 mg rGO and ZnO with the value of l.67×l05 Ω. This experiment shows the significant role of conductive fillers like rGO and ZnO incorporated in polymeric material such as PDMS to improve its electrical properties.

  5. Influence of Graphene Oxide on the Tribological and Electrical Properties of PMMA Composites

    Directory of Open Access Journals (Sweden)

    Jiale Song

    2013-01-01

    Full Text Available The graphene oxide (GO was obtained by Hummers' method using natural graphite as raw materials. Then, the GO/poly(methyl methacrylate (PMMA nanocomposites were prepared by in situ polymerization. The tribological and electrical properties of nanocomposites were studied. As a result, the frictional coefficient of GO/PMMA nanocomposites was prominently improved with the content of the graphene oxide increasing. The electrical properties of nanocomposites were slightly increased when adding the graphene oxide.

  6. Temperature-dependent electrical property transition of graphene oxide paper

    International Nuclear Information System (INIS)

    Huang Xingyi; Jiang Pingkai; Zhi Chunyi; Golberg, Dmitri; Bando, Yoshio; Tanaka, Toshikatsu

    2012-01-01

    Reduction of graphene oxide is primarily important because different reduction methods may result in graphene with totally different properties. For systematically exploring the reduction of graphene oxide, studies of the temperature-dependent electrical properties of graphene oxide (GO) are urgently required. In this work, for the first time, broadband dielectric spectroscopy was used to carry out an in situ investigation on the transition of the electrical properties of GO paper from −40 to 150 °C. The results clearly reveal a very interesting four-stage transition of electrical properties of GO paper with increasing temperature: insulator below 10 °C (stage 1), semiconductor at between 10 and 90 °C (stage 2), insulator at between 90 and 100 °C (stage 3), and semiconductor again at above 100 °C (stage 4). Subsequently, the transition mechanism was discussed in combination with detailed dielectric properties, microstructure and thermogravimetric analyses. It is suggested that the temperature-dependent transition of electronic properties of GO is closely associated with the ion mobility, water molecules removal and the reduction of GO in the GO paper. Most importantly, the present work clearly demonstrates the reduction of GO paper starts at above 100 °C. (paper)

  7. A non-erasable magnetic memory based on the magnetic permeability

    International Nuclear Information System (INIS)

    Petrie, J.R.; Wieland, K.A.; Burke, R.A.; Newburgh, G.A.; Burnette, J.E.; Fischer, G.A.; Edelstein, A.S.

    2014-01-01

    A non-erasable memory based on using differences in the magnetic permeability is demonstrated. The method can potentially store information indefinitely. Initially the high permeability bits were 10–50 μm wide lines of sputtered permalloy (Ni 81 Fe 19 ) on a glass substrate. In a second writing technique a continuous film of amorphous, high permeability ferromagnetic Metglas (Fe 78 Si 13 B 9 ) was sputtered onto a similar glass substrate. Low permeability, crystalline 50 μm wide lines were then written in the film by laser heating. Both types of written media were read by applying an external probe field that is locally modified by the permeability of each bit. The modifications in the probe field were read by a nearby set of 10 micron wide magnetic tunnel junctions with a signal-to-noise ratio of up to 45 dB. This large response to changes in bit permeability is not altered after the media has been exposed to a 6400 Oe field. While being immediately applicable for data archiving and secure information storage, higher densities are possible with smaller read and write heads. - Highlights: • We demonstrate a non-erasable memory based on changes in the magnetic permeability. • Large change in permeability occur when Metglas changes from amorphous to crystalline. • Micron size regions of Metglas can be crystallized using a laser. • Permeability changes read by observing deviations of a probe field with an MTJ

  8. Synthesis and electrical characterization of tungsten oxide nanowires

    Institute of Scientific and Technical Information of China (English)

    Huang Rui; Zhu Jing; Yu Rong

    2009-01-01

    Tungsten oxide nanowires of diameters ranging from 7 to 200 nm are prepared on a tungsten rod substrate by using the chemical vapour deposition (CVD) method with vapour-solid (VS) mechanism. Tin powders are used to control oxygen concentration in the furnace, thereby assisting the growth of the tungsten oxide nanowires. The grown tungsten oxide nanowires are determined to be of crystalline W18O49. Ⅰ-Ⅴ curves are measured by an in situ transmission electron microscope (TEM) to investigate the electrical properties of the nanowires. All of the Ⅰ-Ⅴ curves observed are symmetric, which reveals that the tungsten oxide nanowires are semiconducting. Quantitative analyses of the experimental I V curves by using a metal-semiconductor-metal (MSM) model give some intrinsic parameters of the tungsten oxide nanowires, such as the carrier concentration, the carrier mobility and the conductivity.

  9. Gaining electricity from in situ oxidation of hydrogen produced by fermentative cellulose degradation.

    Science.gov (United States)

    Niessen, J; Schröder, U; Harnisch, F; Scholz, F

    2005-01-01

    To exploit the fermentative hydrogen generation and direct hydrogen oxidation for the generation of electric current from the degradation of cellulose. Utilizing the metabolic activity of the mesophilic anaerobe Clostridium cellulolyticum and the thermophilic Clostridium thermocellum we show that electricity generation is possible from cellulose fermentation. The current generation is based on an in situ oxidation of microbially synthesized hydrogen at platinum-poly(tetrafluoroaniline) (Pt-PTFA) composite electrodes. Current densities of 130 mA l(-1) (with 3 g cellulose per litre medium) were achieved in poised potential experiments under batch and semi-batch conditions. The presented results show that electricity generation is possible by the in situ oxidation of hydrogen, product of the anaerobic degradation of cellulose by cellulolytic bacteria. For the first time, it is shown that an insoluble complex carbohydrate like cellulose can be used for electricity generation in a microbial fuel cell. The concept represents a first step to the utilization of macromolecular biomass components for microbial electricity generation.

  10. Ultrafine particles and nitrogen oxides generated by gas and electric cooking

    OpenAIRE

    Dennekamp, M; Howarth, S; Dick, C; Cherrie, J; Donaldson, K; Seaton, A

    2001-01-01

    OBJECTIVES—To measure the concentrations of particles less than 100 nm diameter and of oxides of nitrogen generated by cooking with gas and electricity, to comment on possible hazards to health in poorly ventilated kitchens.
METHODS—Experiments with gas and electric rings, grills, and ovens were used to compare different cooking procedures. Nitrogen oxides (NOx) were measured by a chemiluminescent ML9841A NOx analyser. A TSI 3934 scanning mobility particle sizer was used to measure average nu...

  11. Electricity and sustainable development

    International Nuclear Information System (INIS)

    Martin, D.

    2003-11-01

    The sustainable development is a political project. Its purpose is to erase the contradictions between the requirements of Environment and social development. the first article of the law of February 10, 2000 erects a sustainable electricity. For the first time. a law integrates the environmental requirements into the electrical industry. The starting point of this study is in the observation of the effects of this integration in a central sector for the developed countries. electricity is the motive of social development. However, it is carried by a Network. This network results from the confusion between the energy policy and the rules which aim at ensuring the construction and the management of structures of production and transport. Nevertheless, if the energy policy integrates the requirements of the environment, the structures subject them to a dominant social logic which aim is to satisfy an increasing demand for electricity. (author)

  12. Decoherence in a double-slit quantum eraser

    International Nuclear Information System (INIS)

    Torres-Ruiz, F. A.; Lima, G.; Delgado, A.; Saavedra, C.; Padua, S.

    2010-01-01

    We study and experimentally implement a double-slit quantum eraser in the presence of a controlled decoherence mechanism. A two-photon state, produced in a spontaneous parametric down-conversion process, is prepared in a maximally entangled polarization state. A birefringent double slit is illuminated by one of the down-converted photons, and it acts as a single-photon two-qubits controlled-not gate that couples the polarization with the transversal momentum of these photons. The other photon, which acts as a which-path marker, is sent through a Mach-Zehnder-like interferometer. When the interferometer is partially unbalanced, it behaves as a controlled source of decoherence for polarization states of down-converted photons. We show the transition from wavelike to particle-like behavior of the signal photons crossing the double slit as a function of the decoherence parameter, which depends on the length path difference at the interferometer.

  13. Potential of reversible solid oxide cells as electricity storage system

    OpenAIRE

    Di Giorgio, Paolo; Desideri, Umberto

    2016-01-01

    Electrical energy storage (EES) systems allow shifting the time of electric power generation from that of consumption, and they are expected to play a major role in future electric grids where the share of intermittent renewable energy systems (RES), and especially solar and wind power plants, is planned to increase. No commercially available technology complies with all the required specifications for an efficient and reliable EES system. Reversible solid oxide cells (ReSOC) working in both ...

  14. Electrical conductivity of uranium-antimony oxide catalysts

    International Nuclear Information System (INIS)

    Golunski, S.E.; Nevell, T.G.; Hucknall, D.J.

    1985-01-01

    The relative ionic and electronic contributions to the electrical conductivity of a uranium-antimony oxide catalyst and of USbO 5 have been determined from measurements of a.c. and d.c. conductance. Under inert atmospheres (390 to 775 K) conduction in the catalyst (predominantly USb 3 O 10 together with small proportions of Sb 2 O 4 and USbO 5 ) is associated with both electronic and effectively charged atomic point defects. Only electronic conduction occurs in USbO 5 . Under oxygen (10 to 70 kPa, 493 to 682 K) both materials are n-type semiconductors at higher temperatures, but at lower temperatures semiconducting behaviour varies with the pressure of oxygen. Heating USbO 5 in oxygen induces an ionic contribution to conductivity. Ionic conduction in the catalyst is eliminated by heating in hydrogen or propene at 470 K but is restored by heating in oxygen. It is suggested that both charged oxygen vacancies and interstitial oxide ions are involved in interactions of gaseous components with uranium-antimony oxides. With alkenes, interstitial oxide ions give rise to the products of selective partial oxidation. (author)

  15. Electrical conductivity of uranium-antimony oxide catalysts

    Energy Technology Data Exchange (ETDEWEB)

    Golunski, S.E.; Nevell, T.G. (Portsmouth Polytechnic (UK)); Hucknall, D.J. (Southampton Univ. (UK). Dept. of Chemistry)

    1985-05-01

    The relative ionic and electronic contributions to the electrical conductivity of a uranium-antimony oxide catalyst and of USbO/sub 5/ have been determined from measurements of a.c. and d.c. conductance. Under inert atmospheres (390 to 775 K) conduction in the catalyst (predominantly USb/sub 3/O/sub 10/ together with small proportions of Sb/sub 2/O/sub 4/ and USbO/sub 5/) is associated with both electronic and effectively charged atomic point defects. Only electronic conduction occurs in USbO/sub 5/. Under oxygen (10 to 70 kPa, 493 to 682 K) both materials are n-type semiconductors at higher temperatures, but at lower temperatures semiconducting behaviour varies with the pressure of oxygen. Heating USbO/sub 5/ in oxygen induces an ionic contribution to conductivity. Ionic conduction in the catalyst is eliminated by heating in hydrogen or propene at 470 K but is restored by heating in oxygen. It is suggested that both charged oxygen vacancies and interstitial oxide ions are involved in interactions of gaseous components with uranium-antimony oxides. With alkenes, interstitial oxide ions give rise to the products of selective partial oxidation.

  16. Analysis of writing and erasing behaviours in phase change materials

    Energy Technology Data Exchange (ETDEWEB)

    Hyot, B. E-mail: bhyot@cea.fr; Poupinet, L.; Gehanno, V.; Desre, P.J

    2002-09-01

    An understanding of the process involved in writing and erasing of phase-change optical recording media is vital to the development of new, and the improvement of existing, products. The present work investigates both experimental and theoretical laser-induced fast structural transformations of GeSbTe thin films. Optical and microstructural changes are correlated using both a static tester and transmission electron microscopy. In the second part of this paper we try to elucidate the physics underlying the amorphous-to-crystalline phase transformation under short-pulse laser excitation. Both thermal and thermodynamical behaviours must be taken into account to illustrate real processes.

  17. Analysis of writing and erasing behaviours in phase change materials

    International Nuclear Information System (INIS)

    Hyot, B.; Poupinet, L.; Gehanno, V.; Desre, P.J.

    2002-01-01

    An understanding of the process involved in writing and erasing of phase-change optical recording media is vital to the development of new, and the improvement of existing, products. The present work investigates both experimental and theoretical laser-induced fast structural transformations of GeSbTe thin films. Optical and microstructural changes are correlated using both a static tester and transmission electron microscopy. In the second part of this paper we try to elucidate the physics underlying the amorphous-to-crystalline phase transformation under short-pulse laser excitation. Both thermal and thermodynamical behaviours must be taken into account to illustrate real processes

  18. Local electrical properties of thermally grown oxide films formed on duplex stainless steel surfaces

    Science.gov (United States)

    Guo, L. Q.; Yang, B. J.; He, J. Y.; Qiao, L. J.

    2018-06-01

    The local electrical properties of thermally grown oxide films formed on ferrite and austenite surfaces of duplex stainless steel at different temperatures were investigated by Current sensing atomic force microscopy, X-ray Photoelectron Spectroscopy (XPS) and Auger Electron Spectroscopy (AES). The current maps and XPS/AES analyses show that the oxide films covering austenite and ferrite surfaces formed at different temperatures exhibit different local electrical characteristics, thickness and composition. The dependence of electrical conductivity of oxide films covering austenite and ferrite surface on the formation temperature is attributed to the film thickness and semiconducting structures, which is intrinsically related to thermodynamics and kinetics process of film grown at different temperature. This is well elucidated by corresponding semiconductor band structures of oxide films formed on austenite and ferrite phases at different temperature.

  19. Oxygen-ion-migration-modulated bipolar resistive switching and complementary resistive switching in tungsten/indium tin oxide/gold memory device

    Science.gov (United States)

    Wu, Xinghui; Zhang, Qiuhui; Cui, Nana; Xu, Weiwei; Wang, Kefu; Jiang, Wei; Xu, Qixing

    2018-06-01

    In this paper, we report our investigation of room-temperature-fabricated tungsten/indium tin oxide/gold (W/ITO/Au) resistive random access memory (RRAM), which exhibits asymmetric bipolar resistive switching (BRS) behavior. The device displays good write/erase endurance and data retention properties. The device shows complementary resistive switching (CRS) characteristics after controlling the compliance current. A WO x layer electrically formed at the W/ITO in the forming process. Mobile oxygen ions within ITO migrate toward the electrode/ITO interface and produce a semiconductor-like layer that acts as a free-carrier barrier. The CRS characteristic here can be elucidated in light of the evolution of an asymmetric free-carrier blocking layer at the electrode/ITO interface.

  20. Digital laser printing of metal/metal-oxide nano-composites with tunable electrical properties

    International Nuclear Information System (INIS)

    Zenou, M; Kotler, Z; Sa’ar, A

    2016-01-01

    We study the electrical properties of aluminum structures printed by the laser forward transfer of molten, femtoliter droplets in air. The resulting printed material is an aluminum/aluminum-oxide nano-composite. By controlling the printing conditions, and thereby the droplet volume, its jetting velocity and duration, it is possible to tune the electrical resistivity to a large extent. The material resistivity depends on the degree of oxidation which takes place during jetting and on the formation of electrical contact points as molten droplets impact the substrate. Evidence for these processes is provided by FIB cross sections of printed structures. (paper)

  1. An electrical method for the measurement of the thermal and electrical conductivity of reduced graphene oxide nanostructures.

    Science.gov (United States)

    Schwamb, Timo; Burg, Brian R; Schirmer, Niklas C; Poulikakos, Dimos

    2009-10-07

    This paper introduces an electrical four-point measurement method enabling thermal and electrical conductivity measurements of nanoscale materials. The method was applied to determine the thermal and electrical conductivity of reduced graphene oxide flakes. The dielectrophoretically deposited samples exhibited thermal conductivities in the range of 0.14-2.87 W m(-1) K(-1) and electrical conductivities in the range of 6.2 x 10(2)-6.2 x 10(3) Omega(-1) m(-1). The measured properties of each flake were found to be dependent on the duration of the thermal reduction and are in this sense controllable.

  2. 10,000 optical write, read, and erase cycles in an azobenzene sidechain liquid-crystalline polyester

    DEFF Research Database (Denmark)

    Holme, NCR; Ramanujam, P.S.; Hvilsted, Søren

    1996-01-01

    We show far what is believed to he the first time that it is possible tu generate 10,000 rapid write, read, and erase cycles optically in an azobenzene sidechain liquid-crystalline polyester. We do this by exposing the film alternately to visible light from an argon laser at 488 nm and ultraviolet...

  3. Electrical transport through single-wall carbon nanotube-anodic aluminum oxide-aluminum heterostructures

    International Nuclear Information System (INIS)

    Kukkola, Jarmo; Rautio, Aatto; Sala, Giovanni; Pino, Flavio; Toth, Geza; Leino, Anne-Riikka; Maeklin, Jani; Jantunen, Heli; Uusimaeki, Antti; Kordas, Krisztian; Gracia, Eduardo; Terrones, Mauricio; Shchukarev, Andrey; Mikkola, Jyri-Pekka

    2010-01-01

    Aluminum foils were anodized in sulfuric acid solution to form thick porous anodic aluminum oxide (AAO) films of thickness ∼6 μm. Electrodes of carboxyl-functionalized single-wall carbon nanotube (SWCNT) thin films were inkjet printed on the anodic oxide layer and the electrical characteristics of the as-obtained SWCNT-AAO-Al structures were studied. Nonlinear current-voltage transport and strong temperature dependence of conduction through the structure was measured. The microstructure and chemical composition of the anodic oxide layer was analyzed using transmission and scanning electron microscopy as well as x-ray photoelectron spectroscopy. Schottky emission at the SWCNT-AAO and AAO-Al interfaces allowed by impurity states in the anodic aluminum oxide film together with ionic surface conduction on the pore walls of AAO gives a reasonable explanation for the measured electrical conduction. Calcined AAO is proposed as a dielectric material for SWCNT-field effect transistors.

  4. Electrical characterization of reduced graphene oxide (rGO) on organic thin film transistor (OTFT)

    Science.gov (United States)

    Musa, Nurhazwani; Halim, Nurul Farhanah Ab.; Ahmad, Mohd Noor; Zakaria, Zulkhairi; Hashim, Uda

    2017-03-01

    A green method and eco-friendly solution were used to chemically reduce graphene oxide (GO) to graphene using green reductant. In this study, graphene oxide (GO) were prepared by using Tours method. Then, reduced graphene oxides (rGO) were prepared by using three typical reduction agents: L-ascorbic acid (L-AA), formamidinesulfinic acid (FAS) and sodium sulfite (Na2SO3). The reduced materials were characterized by Fourier transform infrared spectroscopy (FTIR), Thermo gravimetric analysis (TGA) and X-ray diffraction (XRD). Graphene based organic thin film transistor (G-OTFT) was prepared by a spin coating and thermal evaporation technique. The electrical characterization of G-OTFT was analyzed by using semiconductor parameter analyzer (SPA). The G-OTFT devices show p-type semiconducting behaviour. This article focuses on the synthesis and reduction of graphene oxide using three different reductants in order to maximise its electrical conductivity. The rGO product demonstrated a good electrical conductivity performance with highly sensitivity sensor.

  5. The influence of Ac parameters in the process of micro-arc oxidation film electric breakdown

    Directory of Open Access Journals (Sweden)

    Ma Jin

    2016-01-01

    Full Text Available This paper studies the electric breakdown discharge process of micro-arc oxidation film on the surface of aluminum alloy. Based on the analysis of the AC parameters variation in the micro-arc oxidation process, the following conclusions can be drawn: The growth of oxide film can be divided into three stages, and Oxide film breakdown discharge occurs twice in the micro-arc oxidation process. The first stage is the formation and disruptive discharge of amorphous oxide film, producing the ceramic oxide granules, which belong to solid dielectric breakdown. In this stage the membrane voltage of the oxide film plays a key role; the second stage is the formation of ceramic oxide film, the ceramic oxide granules turns into porous structure oxide film in this stage; the third stage is the growth of ceramic oxide film, the gas film that forms in the oxide film’s porous structure is electric broken-down, which is the second breakdown discharge process, the current density on the oxide film surface could affect the breakdown process significantly.

  6. Effect of proton-conduction in electrolyte on electric efficiency of multi-stage solid oxide fuel cells

    Science.gov (United States)

    Matsuzaki, Yoshio; Tachikawa, Yuya; Somekawa, Takaaki; Hatae, Toru; Matsumoto, Hiroshige; Taniguchi, Shunsuke; Sasaki, Kazunari

    2015-07-01

    Solid oxide fuel cells (SOFCs) are promising electrochemical devices that enable the highest fuel-to-electricity conversion efficiencies under high operating temperatures. The concept of multi-stage electrochemical oxidation using SOFCs has been proposed and studied over the past several decades for further improving the electrical efficiency. However, the improvement is limited by fuel dilution downstream of the fuel flow. Therefore, evolved technologies are required to achieve considerably higher electrical efficiencies. Here we present an innovative concept for a critically-high fuel-to-electricity conversion efficiency of up to 85% based on the lower heating value (LHV), in which a high-temperature multi-stage electrochemical oxidation is combined with a proton-conducting solid electrolyte. Switching a solid electrolyte material from a conventional oxide-ion conducting material to a proton-conducting material under the high-temperature multi-stage electrochemical oxidation mechanism has proven to be highly advantageous for the electrical efficiency. The DC efficiency of 85% (LHV) corresponds to a net AC efficiency of approximately 76% (LHV), where the net AC efficiency refers to the transmission-end AC efficiency. This evolved concept will yield a considerably higher efficiency with a much smaller generation capacity than the state-of-the-art several tens-of-MW-class most advanced combined cycle (MACC).

  7. A novel immunohistochemical sequential multi-labelling and erasing technique enables epitope characterization of bone marrow pericytes in primary myelofibrosis

    DEFF Research Database (Denmark)

    Madelung, Ann; Bzorek, Michael; Bondo, Henrik

    2012-01-01

    : In Philadelphia (Ph)-negative chronic myeloproliferative neoplasms, increased microvascular density, bizarre vessel architecture and increased number of pericytes are among the distinct histopathological features. The aim of this study was to characterize bone marrow pericytes in primary myelofibrosis (PMF) using...... a novel multi-labelling immunohistochemical technique. Methods and results: Bone marrow biopsies from a normal donor (n = 1) and patients with PMF (n = 3) were subjected to an immunohistochemical sequential multi-labelling and erasing technique (SE-technique). Antigens of interest in the first and....../or second layer were detected with an immunoperoxidase system and visualized with aminoethylcarbazole. After imaging, erasing and blocking of immunoreagents, the slides were stained with a traditional double immunolabelling procedure. In addition, we applied a Photoshop(®) colour palette, creating a single...

  8. Electrical Generation for More-Electric Aircraft Using Solid Oxide Fuel Cells

    Energy Technology Data Exchange (ETDEWEB)

    Whyatt, Greg A.; Chick, Lawrence A.

    2012-04-01

    This report examines the potential for Solid-Oxide Fuel Cells (SOFC) to provide electrical generation on-board commercial aircraft. Unlike a turbine-based auxiliary power unit (APU) a solid oxide fuel cell power unit (SOFCPU) would be more efficient than using the main engine generators to generate electricity and would operate continuously during flight. The focus of this study is on more-electric aircraft which minimize bleed air extraction from the engines and instead use electrical power obtained from generators driven by the main engines to satisfy all major loads. The increased electrical generation increases the potential fuel savings obtainable through more efficient electrical generation using a SOFCPU. However, the weight added to the aircraft by the SOFCPU impacts the main engine fuel consumption which reduces the potential fuel savings. To investigate these relationships the Boeing 787­8 was used as a case study. The potential performance of the SOFCPU was determined by coupling flowsheet modeling using ChemCAD software with a stack performance algorithm. For a given stack operating condition (cell voltage, anode utilization, stack pressure, target cell exit temperature), ChemCAD software was used to determine the cathode air rate to provide stack thermal balance, the heat exchanger duties, the gross power output for a given fuel rate, the parasitic power for the anode recycle blower and net power obtained from (or required by) the compressor/expander. The SOFC is based on the Gen4 Delphi planar SOFC with assumed modifications to tailor it to this application. The size of the stack needed to satisfy the specified condition was assessed using an empirically-based algorithm. The algorithm predicts stack power density based on the pressure, inlet temperature, cell voltage and anode and cathode inlet flows and compositions. The algorithm was developed by enhancing a model for a well-established material set operating at atmospheric pressure to reflect the

  9. Effect of oxidizer on grain size and low temperature DC electrical conductivity of tin oxide nanomaterial synthesized by gel combustion method

    International Nuclear Information System (INIS)

    Rajeeva, M. P.; Jayanna, H. S.; Ashok, R. L.; Naveen, C. S.; Bothla, V. Prasad

    2014-01-01

    Nanocrystalline Tin oxide material with different grain size was synthesized using gel combustion method by varying the fuel (C 6 H 8 O 7 ) to oxidizer (HNO 3 ) molar ratio by keeping the amount of fuel as constant. The prepared samples were characterized by using X-Ray Diffraction (XRD), Scanning Electron Microscope (SEM) and Energy Dispersive Analysis X-ray Spectroscopy (EDAX). The effect of fuel to oxidizer molar ratio in the gel combustion method was investigated by inspecting the grain size of nano SnO 2 powder. The grain size was found to be reduced with the amount of oxidizer increases from 0 to 6 moles in the step of 2. The X-ray diffraction patterns of the calcined product showed the formation of high purity tetragonal tin (IV) oxide with the grain size in the range of 12 to 31 nm which was calculated by Scherer's formula. Molar ratio and temperature dependence of DC electrical conductivity of SnO 2 nanomaterial was studied using Keithley source meter. DC electrical conductivity of SnO 2 nanomaterial increases with the temperature from 80K to 300K. From the study it was observed that the DC electrical conductivity of SnO 2 nanomaterial decreases with the grain size at constant temperature

  10. Radiation effects on the electrical properties of hafnium oxide based MOS capacitors.

    Energy Technology Data Exchange (ETDEWEB)

    Petrosky, J. C. (Air Force Institute of Technology, Wright-Patterson Air Force Base, OH); McClory, J. W. (Air Force Institute of Technology, Wright-Patterson Air Force Base, OH); Bielejec, Edward Salvador; Foster, J. C. (Air Force Institute of Technology, Wright-Patterson Air Force Base, OH)

    2010-10-01

    Hafnium oxide-based MOS capacitors were investigated to determine electrical property response to radiation environments. In situ capacitance versus voltage measurements were analyzed to identify voltage shifting as a result of changes to trapped charge with increasing dose of gamma, neutron, and ion radiation. In situ measurements required investigation and optimization of capacitor fabrication to include dicing, cleaning, metalization, packaging, and wire bonding. A top metal contact of 200 angstroms of titanium followed by 2800 angstroms of gold allowed for repeatable wire bonding and proper electrical response. Gamma and ion irradiations of atomic layer deposited hafnium oxide on silicon devices both resulted in a midgap voltage shift of no more than 0.2 V toward less positive voltages. This shift indicates recombination of radiation induced positive charge with negative trapped charge in the bulk oxide. Silicon ion irradiation caused interface effects in addition to oxide trap effects that resulted in a flatband voltage shift of approximately 0.6 V also toward less positive voltages. Additionally, no bias dependent voltage shifts with gamma irradiation and strong oxide capacitance room temperature annealing after ion irradiation was observed. These characteristics, in addition to the small voltage shifts observed, demonstrate the radiation hardness of hafnium oxide and its applicability for use in space systems.

  11. TiFeCoNi oxide thin film - A new composition with extremely low electrical resistivity at room temperature

    International Nuclear Information System (INIS)

    Yang, Ya-Chu; Tsau, Chun-Huei; Yeh, Jien-Wei

    2011-01-01

    We show the electrical resistivity of a TiFeCoNi oxide thin film. The electrical resistivity of the TiFeCoNi thin film decreased sharply after a suitable period of oxidation at high temperature. The lowest resistivity of the TiFeCoNi oxide film was 35 ± 3 μΩ-cm. The low electrical resistivity of the TiFeCoNi oxide thin film was attributed to Ti, which is more reactive than the other elements, reacting with oxygen at the initial stage of annealing. The low resistivity is caused by the remaining electrons.

  12. Gamma irradiation effects in programmable read only memories

    International Nuclear Information System (INIS)

    Vujisic, M; Osmokrovic, P; Loncar, B

    2007-01-01

    This paper examines the reliability of commercial off the shelf (COTS) erasable programmable read only memory (EPROM) and electrically erasable programmable read only memory (EEPROM) components exposed to gamma radiation. Results obtained for 64 KB EPROM (NM27C512) and 16 KB EEPROM (M24128) components provide evidence that EPROMs have greater radiation hardness than EEPROMs. Moreover, the changes in EPROMs are reversible, and after erasure and reprogramming all EPROM components restore their functionality. On the other hand, changes in EEPROMs are irreversible. The obtained results are analysed and interpreted on the basis of gamma ray interaction with the oxide layer

  13. In-situ measurement of the electrical conductivity of aluminum oxide in HFIR

    Energy Technology Data Exchange (ETDEWEB)

    Zinkle, S.J.; White, D.P.; Snead, L.L. [Oak Ridge National Lab., TN (United States)] [and others

    1996-10-01

    A collaborative DOE/Monbusho irradiation experiment has been completed which measured the in-situ electrical resistivity of 12 different grades of aluminum oxide during HFIR neutron irradiation at 450{degrees}C. No evidence for bulk RIED was observed following irradiation to a maximum dose of 3 dpa with an applied dc electric field of 200 V/mm.

  14. Automated AC Electrical Impedance Measurement of Ceramic Oxides by means of a Lock-in Amplifier

    International Nuclear Information System (INIS)

    Al-Khawaja, S.; Al-Sous, M. B.; Nasrallah, F.

    2009-06-01

    In this study, the electrical impedance of some ceramic oxides has been investigated employing the Perkin Elmer DSP 7280 Lock-in amplifier, while recording the electric response versus frequency and temperature at constant amplitude. Via integral automation of this lock-in with other delicate electrical measuring devices, a control program has been developed to accurately and swiftly acquire the frequency response of the sample, in order to lately infer the resulting samples' impedance in volt and ampere. Two maxima peaks characterising the impedance, in the curve of the doped molybdenum oxide have been observed discerning two phases in the sample (doped with 40% of niobium oxide), which shows a remarkable relaxation related to improvement in its ionic conductivity within the solid phase, with respect to increasing frequency. (author)

  15. An investigation on high-temperature electrical transport properties of graphene-oxide nano-thinfilms

    International Nuclear Information System (INIS)

    Venugopal, Gunasekaran; Krishnamoorthy, Karthikeyan; Kim, Sang-Jae

    2013-01-01

    High-temperature electrical transport properties are investigated for graphene-oxide nano thinfilms. The graphene-oxide nanoparticles are synthesized by modified Hummers method and characterized by UV–vis, Raman and X-ray diffraction techniques. The surface morphology of graphene-oxide film is analyzed using scanning electron and atomic force microscopy. The experimental results on high-temperature electrical studies of thinfilms exhibit metallic behavior followed by three-dimensional variable range hopping mechanism. The current–voltage characteristics at various temperatures (from 293 K to 573 K) were investigated. The effect of high-temperature on the functional groups of graphene-oxide film is evidently examined using X-ray photoelectron, thermal gravimetric analysis and Fourier transform infra-red spectroscopy. Transistor characteristics were performed after heat treatment resulting ambipolar behavior with holes and electron mobility of 127 and 66.9 cm 2 V −1 s −1 respectively. Our results are comparable to reduced graphene-oxide, indicating the advantage of our approach requires no further reduction to develop graphene-based transparent and conductive electrodes for dye-sensitized solar cells and ultra-capacitor applications.

  16. Influence of radiational oxidation on the kinetics of electrization of polypropylene by electron irradiation

    International Nuclear Information System (INIS)

    Rozno, A.G.; Romanov, A.V.; Sukhov, N.L.; Gromov, V.V.; Ershov, B.G.

    1992-01-01

    Kinetics of volumetric electric charge and accumulation of paramagnetic centres (PMC) in polypropylene (PP) of two crystal modifications, subjected to radiational oxidation were studied. A correlation between volumetric charge and PMC in radiationally oxidation PP was detected. Considerable influence of crystal phase on the processes of charging and radiational oxidation was revealed

  17. Vanadium Doped Tungsten Oxide Material - Electrical Physical and Sensing Properties

    Directory of Open Access Journals (Sweden)

    Shishkin N. Y.

    2008-05-01

    Full Text Available The electrical physical and sensing (to VOCs and inorganic gases properties of vanadium doped tungsten oxide in the regions of phase transition temperature were investigated. Vanadium oxide (II dimerization was observed in the doped material, corresponding to new phase transition. The extreme sensitivity and selectivity to chemically active gases and vapors in small concentrations: CO, NOx, NH3 acetone, ethanol near phase transitions temperature was found. Sensor elements were manufactured for the quantitative detection (close to 1 ppm of alcohol and ammonia.

  18. Effect of hydrothermal treatment of coal on the oxidation susceptibility and electrical resistivity of HTT coke

    Energy Technology Data Exchange (ETDEWEB)

    Sarkar, N.B.; Sarkar, P.; Choudhury, A. [Central Fuel Research Institute, P.O. FRI, Dhanbad-828108, Jharkhand (India)

    2005-02-25

    The influence of hydrothermal treatment of coal prior to carbonization, on the oxidation susceptibility of resultant coke/char, calcined at 1350, 1800 and 2200 {sup o}C has been investigated. The non-isothermal thermogravimetric analysis technique has been employed, and parameters such as onset, DTG peak temperatures, and cumulative oxidation loss (wt.%) at different temperatures have been utilized to compare proneness to oxidation with respective untreated samples apart from electrical resistivity. Data suggest that all the cokes/chars samples produced from hydrothermally treated coals are less reactive and more electrically conductive (less resistive) than their respective untreated counterparts. But the extent of improvement of oxidation resistance and electrical conductivity appears to be coal-specific. The kinetic parameters obtained by non-linear regression analysis on multi-curve reveal that the n{sup th} order reaction model (where 'n' was found to vary from 0.9 to 1.3) is the best-fitted model. The higher activation energy values observed for hydrothermally treated coke samples are in agreement with the observation of TG analysis data. Overall results indicate the importance of introducing a hydrothermal treatment step for the improvement of oxidation resistance as well as electrical conductivity of the coke samples.

  19. The role of electric field during spray deposition on fluorine doped tin oxide film

    Energy Technology Data Exchange (ETDEWEB)

    Kumar, Anuj, E-mail: anujkumarom@gmail.com; Swami, Sanjay Kumar; Dutta, Viresh

    2014-03-05

    Highlights: • Fluorine doped tin oxide deposition by spray technique. • The growth reaction of tin oxide, controlled by the electric field on the substrate surface. • Deposit on large scale substrate 10 cm × 10 cm by single nozzle. • Obtained good quality of thin film. -- Abstract: The fluorine doped tin oxide film has been deposited on 10 cm × 10 cm glass substrate by using spray technique with a voltage applied between the nozzle and an annular electrode placed 2 mm below the nozzle. The effect of the electric field thus created during the spray deposition on structural, optical and electrical properties of SnO{sub 2}:F (FTO) film was studied. X-ray diffraction pattern revealed the presence of cassiterite structure with (2 0 0) orientation for all the FTO film. SEM study revealed the formation of smooth and uniform surface FTO film under the electric field over the entire substrate area. The electrical measurements show that the film prepared under the electric field (for an applied voltage of 2000 V) had a resistivity ∼1.2 × 10{sup −3} Ω cm, carrier concentration ∼4.21 × 10{sup 20} cm{sup −3} and mobility ∼14.48 cm{sup 2} V{sup −1} s{sup −1}. The sprayed FTO film have the average transmission in the visible region of more than about 80%.

  20. Method and apparatus for bistable optical information storage for erasable optical disks

    Science.gov (United States)

    Land, Cecil E.; McKinney, Ira D.

    1990-01-01

    A method and an optical device for bistable storage of optical information, together with reading and erasure of the optical information, using a photoactivated shift in a field dependent phase transition between a metastable or a bias-stabilized ferroelectric (FE) phase and a stable antiferroelectric (AFE) phase in an lead lanthanum zirconate titanate (PLZT). An optical disk contains the PLZT. Writing and erasing of optical information can be accomplished by a light beam normal to the disk. Reading of optical information can be accomplished by a light beam at an incidence angle of 15 to 60 degrees to the normal of the disk.

  1. Electrical and optical performance of transparent conducting oxide films deposited by electrostatic spray assisted vapour deposition.

    Science.gov (United States)

    Hou, Xianghui; Choy, Kwang-Leong; Liu, Jun-Peng

    2011-09-01

    Transparent conducting oxide (TCO) films have the remarkable combination of high electrical conductivity and optical transparency. There is always a strong motivation to produce TCO films with good performance at low cost. Electrostatic Spray Assisted Vapor Deposition (ESAVD), as a variant of chemical vapour deposition (CVD), is a non-vacuum and low-cost deposition method. Several types of TCO films have been deposited using ESAVD process, including indium tin oxide (ITO), antimony-doped tin oxide (ATO), and fluorine doped tin oxide (FTO). This paper reports the electrical and optical properties of TCO films produced by ESAVD methods, as well as the effects of post treatment by plasma hydrogenation on these TCO films. The possible mechanisms involved during plasma hydrogenation of TCO films are also discussed. Reduction and etching effect during plasma hydrogenation are the most important factors which determine the optical and electrical performance of TCO films.

  2. Guidance system operations plan for manned CSM earth orbital and lunar missions using program COLOSSUS 3. Section 7: Erasable memory programs

    Science.gov (United States)

    Hamilton, M. H.

    1972-01-01

    Erasable-memory programs designed for guidance computers used in command and lunar modules are presented. The purpose, functional description, assumptions, restrictions, and imitations are given for each program.

  3. A radiation-electric-field combination principle for SO2-oxidation in Ar-mixtures

    International Nuclear Information System (INIS)

    Leonhardt, J.; Krueger, H.; Popp, P.; Boes, J.

    1981-01-01

    A simple model for a radiation-induced SO 2 -oxidation in Ar using SO 2 /O 2 /Ar-mixtures has been described by Leonhardt a.o. It is possible to improve the efficiency of the radiation-induced SO 2 -oxidation in such mixtures if the electrons produced by the ionizing radiation are accelerated by means of an electric field. The energy of the field-accelerated electrons must be high enough to form reactive SO 2 radicals but not high enough to ionize the gas mixture. Such an arrangement is described. The connection between the rate of SO 3 -formation and the electric field and the connection between SO 3 -formation and decreasing of the O 2 -concentration in the reaction chaimber were experimentally determined. Further the G-values attained by means of the radiation-electric-field combination are discussed. (author)

  4. Reducing primary and secondary traumatic stress symptoms among educators by training them to deliver a resiliency program (ERASE-Stress) following the Christchurch earthquake in New Zealand.

    Science.gov (United States)

    Berger, Rony; Abu-Raiya, Hisham; Benatov, Joy

    2016-03-01

    The current investigation evaluated the impact of a universal school-based resiliency intervention (ERASE-Stress) on educators who were working with elementary schoolchildren exposed to the Canterbury earthquake in New Zealand. In the context of major disasters, educators may suffer from "dual trauma"; they can experience symptoms of both primary trauma (as a result of the disaster itself) and secondary trauma (as a result of working with traumatized students). Sixty-three educators were randomly assigned to either the ERASE-Stress intervention or an alternative Managing Emergencies and Traumatic Incidents (METI) program which served as a control group. Efficacy of the program was evaluated at the end of the training as well as at 8 months follow-up. Compared with educators in the control group, those in the ERASE-Stress intervention significantly reduced their posttraumatic distress and secondary traumatization symptoms, improved their perceived level of professional self-efficacy as a helper of earthquake survivors, developed an optimistic outlook regarding their personal future and enhanced their sense of hope, and honed some of their positive coping strategies and reduced the utilization of some maladaptive coping methods. These beneficial consequences of the ERASE-Stress training make it a potentially useful tool for educators working with traumatized students in the context of major disasters. (PsycINFO Database Record (c) 2016 APA, all rights reserved).

  5. Electrical Switching in Thin Film Structures Based on Transition Metal Oxides

    Directory of Open Access Journals (Sweden)

    A. Pergament

    2015-01-01

    Full Text Available Electrical switching, manifesting itself in the nonlinear current-voltage characteristics with S- and N-type NDR (negative differential resistance, is inherent in a variety of materials, in particular, transition metal oxides. Although this phenomenon has been known for a long time, recent suggestions to use oxide-based switching elements as neuristor synapses and relaxation-oscillation circuit components have resumed the interest in this area. In the present review, we describe the experimental facts and theoretical models, mainly on the basis of the Mott transition in vanadium dioxide as a model object, of the switching effect with special emphasis on the emerging applied potentialities for oxide electronics.

  6. Effect of Samarium Oxide on the Electrical Conductivity of Plasma-Sprayed SOFC Anodes

    Science.gov (United States)

    Panahi, S. N.; Samadi, H.; Nemati, A.

    2016-10-01

    Solid oxide fuel cells (SOFCs) are rapidly becoming recognized as a new alternative to traditional energy conversion systems because of their high energy efficiency. From an ecological perspective, this environmentally friendly technology, which produces clean energy, is likely to be implemented more frequently in the future. However, the current SOFC technology still cannot meet the demands of commercial applications due to temperature constraints and high cost. To develop a marketable SOFC, suppliers have tended to reduce the operating temperatures by a few hundred degrees. The overall trend for SOFC materials is to reduce their service temperature of electrolyte. Meanwhile, it is important that the other components perform at the same temperature. Currently, the anodes of SOFCs are being studied in depth. Research has indicated that anodes based on a perovskite structure are a more promising candidate in SOFCs than the traditional system because they possess more favorable electrical properties. Among the perovskite-type oxides, SrTiO3 is one of the most promising compositions, with studies demonstrating that SrTiO3 exhibits particularly favorable electrical properties in contrast with other perovskite-type oxides. The main purpose of this article is to describe our study of the effect of rare-earth dopants with a perovskite structure on the electrical behavior of anodes in SOFCs. Sm2O3-doped SrTiO3 synthesized by a solid-state reaction was coated on substrate by atmospheric plasma spray. To compare the effect of the dopant on the electrical conductivity of strontium titanate, different concentrations of Sm2O3 were used. The samples were then investigated by x-ray diffraction, four-point probe at various temperatures (to determine the electrical conductivity), and a scanning electron microscope. The study showed that at room temperature, nondoped samples have a higher electrical resistance than doped samples. As the temperature was increased, the electrical

  7. Removal of oxides from alkali metal melts by reductive titration to electrical resistance-change end points

    Science.gov (United States)

    Tsang, Floris Y.

    1980-01-01

    Alkali metal oxides dissolved in alkali metal melts are reduced with soluble metals which are converted to insoluble oxides. The end points of the reduction is detected as an increase in electrical resistance across an alkali metal ion-conductive membrane interposed between the oxide-containing melt and a material capable of accepting the alkali metal ions from the membrane when a difference in electrical potential, of the appropriate polarity, is established across it. The resistance increase results from blocking of the membrane face by ions of the excess reductant metal, to which the membrane is essentially non-conductive.

  8. Memory Erasing Drugs Now in Earliest Stages%美科学家正研制遗忘痛苦药

    Institute of Scientific and Technical Information of China (English)

    2011-01-01

    Painful memories of people could be erased from their mind by a new medical technology, a research made by Johns Hopkins University suggests. The Johns Hopkins researchers say they are working on ways to remove the pro teins from the brain's fear center,

  9. Optical and electrical properties of Cu-based all oxide semi-transparent photodetector

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Hong-Sik; Patel, Malkeshkumar; Yadav, Pankaj; Kim, Joondong, E-mail: joonkim@inu.ac.kr, E-mail: dwkim@ewha.ac.kr [Photoelectric and Energy Device Application Lab (PEDAL) and Department of Electrical Engineering, Incheon National University, 119 Academy Rd., Yeonsu, Incheon 406772 (Korea, Republic of); Sohn, Ahrum; Kim, Dong-Wook, E-mail: joonkim@inu.ac.kr, E-mail: dwkim@ewha.ac.kr [Department of Physics, Ewha Womans University, Seoul 120750 (Korea, Republic of)

    2016-09-05

    Zero-bias operating Cu oxide-based photodetector was achieved by using large-scale available sputtering method. Cu oxide (Cu{sub 2}O or CuO) was used as p-type transparent layer to form a heterojunction by contacting n-type ZnO layer. All metal-oxide materials were employed to realize transparent device at room temperature and showed a high transparency (>75% at 600 nm) with excellent photoresponses. The structural, morphological, optical, and electrical properties of Cu oxides of CuO and Cu{sub 2}O are evaluated in depth by UV-visible spectrometer, X-ray diffraction, scanning electron microscopy, atomic force microscopy, Kelvin probe force microscopy, and Hall measurements. We may suggest a route of high-functional Cu oxide-based photoelectric devices for the applications in flexible and transparent electronics.

  10. NRC Information No. 88-98: Electrical relay degradation caused by oxidation of contact surfaces

    International Nuclear Information System (INIS)

    Rossi, C.E.

    1992-01-01

    The NRC staff was recently informed by Clinton Power Station that a reactor scram on June 24, 1988, was caused by an electrical relay failure from oxide buildup on relay contact surfaces. Other information on relay failure from contact oxidation indicates that this problem may be more prevalent than previously thought. For example, a July 17, 1988, 10 CFR Part 21 report from Palo Verde, Unit 2, reported relay failures from contact oxidation that were due to the low current application of the relays. The relay contact surfaces in both of these examples are silver-nickel alloys, and both applications were for low current (i.e., milli-ampere current). Electrical relay contacts made of silver-nickel or silver-cadmium alloys will oxidize (tarnish) when used in low current applications because of the absence of contact surface sparking from the typical relay contact ''making and breaking'' functions. The sparking in the contact surfaces promotes a self-cleaning mechanism that reduces the tarnish buildup on the silver-nickel or silver-cadmium contacts. Discussions with one relay manufacturer revealed that the normal industry practice for low current circuit applications is either to use a contact surface material that will not oxidize or to compensate for the oxidation by increased maintenance activities to ensure reliability. The applied voltage may also influence contact oxidation

  11. Physical and electrical properties of thermal oxidized Sm{sub 2}O{sub 3} gate oxide thin film on Si substrate: Influence of oxidation durations

    Energy Technology Data Exchange (ETDEWEB)

    Goh, Kian Heng; Haseeb, A.S.M.A.; Wong, Yew Hoong, E-mail: yhwong@um.edu.my

    2016-05-01

    Growth of 150 nm Sm{sub 2}O{sub 3} films by sputtered pure samarium metal film on silicon substrates and followed by thermal oxidation process in oxygen ambient at 700 °C through various oxidation durations (5 min, 10 min, 15 min and 20 min) has been carried out. The crystallinity of Sm{sub 2}O{sub 3} film and existence of interfacial layer have been evaluated by X-ray diffraction, Fourier transform infrared and Raman analysis. Crystallite size and microstrain of Sm{sub 2}O{sub 3} were estimated by Williamson–Hall plot analysis. Calculated crystallite size of Sm{sub 2}O{sub 3} from Scherrer equation has similar trend with the value from Williamson–Hall plot. The presence of interfacial layer is supported by composition line scan by energy dispersive X-ray spectroscopy analysis. The surface roughness and surface topography of Sm{sub 2}O{sub 3} film were examined by atomic force microscopy analysis. The electrical characterization revealed that 15 min of oxidation durations with smoothest surface has highest breakdown voltage, lowest leakage current density and highest barrier height value. - Highlights: • Thermal oxidation of sputtered pure metallic Sm in oxygen ambient • Formation of polycrystalline Sm{sub 2}O{sub 3} and semi-polycrystalline interfacial layers • Optimization of oxidation duration of pure metallic Sm in oxygen ambient • Enhanced electrical performance with smooth surface and increased barrier height.

  12. Low temperature formation of electrode having electrically conductive metal oxide surface

    Science.gov (United States)

    Anders, Simone; Anders, Andre; Brown, Ian G.; McLarnon, Frank R.; Kong, Fanping

    1998-01-01

    A low temperature process is disclosed for forming metal suboxides on substrates by cathodic arc deposition by either controlling the pressure of the oxygen present in the deposition chamber, or by controlling the density of the metal flux, or by a combination of such adjustments, to thereby control the ratio of oxide to metal in the deposited metal suboxide coating. The density of the metal flux may, in turn, be adjusted by controlling the discharge current of the arc, by adjusting the pulse length (duration of on cycle) of the arc, and by adjusting the frequency of the arc, or any combination of these parameters. In a preferred embodiment, a low temperature process is disclosed for forming an electrically conductive metal suboxide, such as, for example, an electrically conductive suboxide of titanium, on an electrode surface, such as the surface of a nickel oxide electrode, by such cathodic arc deposition and control of the deposition parameters. In the preferred embodiment, the process results in a titanium suboxide-coated nickel oxide electrode exhibiting reduced parasitic evolution of oxygen during charging of a cell made using such an electrode as the positive electrode, as well as exhibiting high oxygen overpotential, resulting in suppression of oxygen evolution at the electrode at full charge of the cell.

  13. Influence of post-annealing on the electrical properties of metal/oxide/silicon nitride/oxide/silicon capacitors for flash memories

    International Nuclear Information System (INIS)

    Kim, Hee Dong; An, Ho-Myoung; Kim, Kyoung Chan; Seo, Yu Jeong; Kim, Tae Geun

    2008-01-01

    We report the effect of post-annealing on the electrical properties of metal/oxide/silicon nitride/oxide/silicon (MONOS) capacitors. Four samples, namely as-deposited and annealed at 750, 850 and 950 °C for 30 s in nitrogen ambient by a rapid thermal process, were prepared and characterized for comparison. The best performance with the largest memory window of 4.4 V and the fastest program speed of 10 ms was observed for the sample annealed at 850 °C. In addition, the highest traps density of 6.84 × 10 18 cm −3 was observed with ideal trap distributions for the same sample by capacitance–voltage (C–V) measurement. These results indicate that the memory traps in the ONO structure can be engineered by post-annealing to improve the electrical properties of the MONOS device

  14. Photoluminescence and electrical properties of silicon oxide and silicon nitride superlattices containing silicon nanocrystals

    International Nuclear Information System (INIS)

    Shuleiko, D V; Ilin, A S

    2016-01-01

    Photoluminescence and electrical properties of superlattices with thin (1 to 5 nm) alternating silicon-rich silicon oxide or silicon-rich silicon nitride, and silicon oxide or silicon nitride layers containing silicon nanocrystals prepared by plasma-enhanced chemical vapor deposition with subsequent annealing were investigated. The entirely silicon oxide based superlattices demonstrated photoluminescence peak shift due to quantum confinement effect. Electrical measurements showed the hysteresis effect in the vicinity of zero voltage due to structural features of the superlattices from SiOa 93 /Si 3 N 4 and SiN 0 . 8 /Si 3 N 4 layers. The entirely silicon nitride based samples demonstrated resistive switching effect, comprising an abrupt conductivity change at about 5 to 6 V with current-voltage characteristic hysteresis. The samples also demonstrated efficient photoluminescence with maximum at ∼1.4 eV, due to exiton recombination in silicon nanocrystals. (paper)

  15. Method of depositing an electrically conductive oxide film on a textured metallic substrate and articles formed therefrom

    Science.gov (United States)

    Christen, David K.; He, Qing

    2001-01-01

    The present invention provides a biaxially textured laminate article having a polycrystalline biaxially textured metallic substrate with an electrically conductive oxide layer epitaxially deposited thereon and methods for producing same. In one embodiment a biaxially texture Ni substrate has a layer of LaNiO.sub.3 deposited thereon. An initial layer of electrically conductive oxide buffer is epitaxially deposited using a sputtering technique using a sputtering gas which is an inert or forming gas. A subsequent layer of an electrically conductive oxide layer is then epitaxially deposited onto the initial layer using a sputtering gas comprising oxygen. The present invention will enable the formation of biaxially textured devices which include HTS wires and interconnects, large area or long length ferromagnetic and/or ferroelectric memory devices, large area or long length, flexible light emitting semiconductors, ferroelectric tapes, and electrodes.

  16. Influence of the nanotube oxidation on the rheological and electrical properties of CNT/HDPE composites

    Energy Technology Data Exchange (ETDEWEB)

    Nobile, Maria Rossella, E-mail: mrnobile@unisa.it; Somma, Elvira; Valentino, Olga; Neitzert, Heinz-Christoph [Department of Industrial Engineering – DIIn - Università di Salerno Via Giovanni Paolo II, 132 - 84084 Fisciano (Italy); Simon, George [Department of Materials Engineering, Monash University, Clayton, Victoria 3800 (Australia)

    2016-05-18

    Rheological and electrical properties of nanocomposites based on multi-walled carbon nanotubes (MWNTs) and high density polyethylene (HDPE), prepared by melt mixing in a micro-twin screw extruder, have been investigated. The effect of MWNT concentration (0.5 and 2.5 wt %) and nanotube surface treatment (oxidative treatment in a tubular furnace at 500°C for 1 hr in a 95% nitrogen, 5% oxygen atmosphere) has been analyzed. It has been found that the sample conductivity with oxidation of the nanotubes decreases more than 2 orders of magnitude. Scanning electron microscopy showed good adhesion and dispersion of nanotubes in the matrix, independently of the surface treatment. Electrical and rheological measurements revealed that the oxidative treatment, causing some reduction of the MWNT quality, decreases the efficiency of the nanotube matrix interaction.

  17. Chronological change of electrical resistance in GeCu2Te3 amorphous film induced by surface oxidation

    International Nuclear Information System (INIS)

    Saito, Yuta; Shindo, Satoshi; Sutou, Yuji; Koike, Junichi

    2014-01-01

    Unusual chronological electrical resistance change behavior was investigated for amorphous GeCu 2 Te 3 phase change material. More than a 1 order decrease of electrical resistance was observed in the air even at room temperature. The resistance of the amorphous film gradually increased with increasing temperature and then showed a drop upon crystallization. Such unusual behavior was attributed to the oxidation of the amorphous GeCu 2 Te 3 film. From the compositional depth profile measurement, the GeCu 2 Te 3 film without any capping layer was oxidized in air at room temperature and the formed oxide was mainly composed of germanium oxide. Consequently, a highly-conductive Cu-rich layer was formed in the vicinity of the surface of the film, which reduced the total resistance of the film. The present results could provide insight into the chronological change of electrical resistance in amorphous chalcogenide materials, indicating that not only relaxation of the amorphous, but also a large atomic diffusion contributes to the chronological resistance change. (paper)

  18. Efficient reduction of graphene oxide film by low temperature heat treatment and its effect on electrical conductivity

    Energy Technology Data Exchange (ETDEWEB)

    Hu, Xuebing; Chen, Zheng [Jingdezhen Ceramic Institute, Jingdezhen (China). Key Lab. of Inorganic Membrane; Yu, Yun [Shanghai Institute of Ceramics, Shanghai (China). Key Lab. of Inorganic Coating Materials; Zhang, Xiaozhen; Wang, Yongqing; Zhou, Jianer [Jingdezhen Ceramic Institute, Jingdezhen (China). Dept. of Materials Engineering

    2018-03-01

    Graphene-based conductive films have already attracted great attention due to their unique and outstanding physical properties. In this work, in order to develop a novel, effective method to produce these films with good electrical conductivity, a simple and green method is reported to rapidly and effectively reduce graphene oxide film using a low temperature heat treatment. The reduction of graphene oxide film is verified by XRD, FT-IR and Raman spectroscopy. Compared with graphene oxide film, the obtained reduced graphene oxide film has better electrical conductivity and its sheet resistance decreases from 25.3 kΩ x sq{sup -1} to 3.3 kΩ x sq{sup -1} after the heat treatment from 160 to 230 C. The mechanism of thermal reduction of the graphene oxide film mainly results from the removal of the oxygen-containing functional groups and the structural changes. All these results indicate that the low temperature heat treatment is a suitable and effective method for the reduction of graphene oxide film.

  19. Oxide Thin-Film Electronics using All-MXene Electrical Contacts

    KAUST Repository

    Wang, Zhenwei

    2018-02-23

    2D MXenes have shown great promise in electrochemical and electromagnetic shielding applications. However, their potential use in electronic devices is significantly less explored. The unique combination of metallic conductivity and hydrophilic surface suggests that MXenes can also be promising in electronics and sensing applications. Here, it is shown that metallic Ti3C2 MXene with work function of 4.60 eV can make good electrical contact with both zinc oxide (ZnO) and tin monoxide (SnO) semiconductors, with negligible band offsets. Consequently, both n-type ZnO and p-type SnO thin-film transistors (TFTs) have been fabricated entirely using large-area MXene (Ti3C2) electrical contacts, including gate, source, and drain. The n- and p-type TFTs show balanced performance, including field-effect mobilities of 2.61 and 2.01 cm2 V−1 s−1 and switching ratios of 3.6 × 106 and 1.1 × 103, respectively. Further, complementary metal oxide semiconductor (CMOS) inverters are demonstrated. The CMOS inverters show large voltage gain of 80 and excellent noise margin of 3.54 V, which is 70.8% of the ideal value. Moreover, the operation of CMOS inverters is shown to be very stable under a 100 Hz square waveform input. The current results suggest that MXene (Ti3C2) can play an important role as contact material in nanoelectronics.

  20. Effect of Co deposition on oxidation behavior and electrical properties of ferritic steel for solid oxide fuel cell interconnects

    Energy Technology Data Exchange (ETDEWEB)

    Kruk, A.; Adamczyk, A.; Gil, A. [AGH University of Science and Technology, Faculty of Materials Science and Ceramics, al. Mickiewicza 30, 30-059 Krakow (Poland); Kąc, S. [AGH University of Science and Technology, Faculty of Metals Engineering and Industrial Computer Science, al. Mickiewicza 30, 30-059 Krakow (Poland); Dąbek, J.; Ziąbka, M. [AGH University of Science and Technology, Faculty of Materials Science and Ceramics, al. Mickiewicza 30, 30-059 Krakow (Poland); Brylewski, T., E-mail: brylew@agh.edu.pl [AGH University of Science and Technology, Faculty of Materials Science and Ceramics, al. Mickiewicza 30, 30-059 Krakow (Poland)

    2015-09-01

    In this work, a Co layer deposited on DIN 50049 steel by means of pulsed laser deposition was applied for the protection of solid oxide fuel cell (SOFC) interconnects operating on the cathode side. The coated and uncoated steel samples were oxidized in air at 1073 K for 500 h, and their microstructures as well as electrical resistances were evaluated using X-ray diffraction, atomic force microscopy, scanning electron microscopy coupled with energy-dispersive X-ray spectroscopy, and the 2-probe 4-point direct current method. It was demonstrated that the Co coating had reduced the oxidation rate of the steel by nearly a half. The area-specific resistance value of the coated steel was 5 × 10{sup −6} Ω·m{sup 2}, which was significantly lower than that of bare steel after 350 h of oxidation at 1073 K. Cr vaporization tests showed that the Co coating was efficient at blocking the outward diffusion of Cr. The obtained results prove that steel coated with a thin film of cobalt was suitable for use as metallic interconnect material in SOFCs operating at intermediate temperatures. - Highlights: • Co layer was deposited on ferritic steel by means of pulsed laser deposition. • Coated and bare ferritic steel samples were exposed to air at 1073 K for 500 h. • Scale growth rate on bare steel is higher than that on coated steel. • Electrical resistance for oxidized coated steel was lower than for bare steel. • Co-coated steel effectively reduced the formation of volatile Cr species.

  1. Structural, electrical and optical studies of SILAR deposited cadmium oxide thin films: Annealing effect

    International Nuclear Information System (INIS)

    Salunkhe, R.R.; Dhawale, D.S.; Gujar, T.P.; Lokhande, C.D.

    2009-01-01

    Successive ionic layer adsorption and reaction (SILAR) method has been successfully employed for the deposition of cadmium oxide (CdO) thin films. The films were annealed at 623 K for 2 h in an air and changes in the structural, electrical and optical properties were studied. From the X-ray diffraction patterns, it was found that after annealing, H 2 O vapors from as-deposited Cd(O 2 ) 0.88 (OH) 0.24 were removed and pure cubic cadmium oxide was obtained. The as-deposited film consists of nanocrystalline grains of average diameter about 20-30 nm with uniform coverage of the substrate surface, whereas for the annealed film randomly oriented morphology with slight increase in the crystallite size has been observed. The electrical resistivity showed the semiconducting nature with room temperature electrical resistivity decreased from 10 -2 to 10 -3 Ω cm after annealing. The decrease in the band gap energy from 3.3 to 2.7 eV was observed after the annealing

  2. Effect of recoiled O on damage regrowth and electrical properties of through-oxide implanted Si

    International Nuclear Information System (INIS)

    Sadana, D.K.; Wu, N.R.; Washburn, J.; Current, M.; Morgan, A.; Reed, D.; Maenpaa, M.

    1982-10-01

    High dose (4 to 7.5 x 10 15 cm -2 ) As implantations into p-type (100) Si have been carried out through a screen-oxide of thicknesses less than or equal to 775A and without screen oxide. The effect of recoiled O on damage annealing and electrical properties of the implanted layers has been investigated using a combination of the following techniques: TEM, RBS/MeV He + channeling, SIMS and Hall measurements in conjunction with chemical stripping and sheet resistivity measurements. The TEM results show that there is a dramatically different annealing behavior of the implantation damage for the through oxide implants (Case I) as compared to implants into bare silicon (Case II). Comparison of the structural defect profiles with O distributions obtained by SIMS demonstrated that retardation in the secondary damage growth in Case I can be directly related with the presence of O. Weak-beam TEM showed that a high density of fine defect clusters (less than or equal to 50A) were present both in Case I and Case II. The electrical profiles showed only 30% of the total As to be electrically active. The structural and electrical results have been explained by a model that entails As-O, Si-O and As-As complex formation and their interaction with the dislocations

  3. Electrooxidative Rhodium-Catalyzed C-H/C-H Activation: Electricity as Oxidant for Cross-Dehydrogenative Alkenylation.

    Science.gov (United States)

    Qiu, Youai; Kong, Wei-Jun; Struwe, Julia; Sauermann, Nicolas; Rogge, Torben; Scheremetjew, Alexej; Ackermann, Lutz

    2018-04-06

    Rhodium(III) catalysis has enabled a plethora of oxidative C-H functionalizations, which predominantly employ stoichiometric amounts of toxic and/or expensive metal oxidants. In contrast, we describe the first electrochemical C-H activation by rhodium catalysis that avoids hazardous chemical oxidants. Thus, environmentally-benign twofold C-H/C-H functionalizations were accomplished with weakly-coordinating benzoic acids and benzamides, employing electricity as the terminal oxidant with H2 as the sole byproduct. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  4. Electrical Properties of Conductive Cotton Yarn Coated with Eosin Y Functionalized Reduced Graphene Oxide.

    Science.gov (United States)

    Kim, Eunju; Arul, Narayanasamy Sabari; Han, Jeong In

    2016-06-01

    This study reports the fabrication and investigation of the electrical properties of two types of conductive cotton yarns coated with eosin Y or eosin B functionalized reduced graphene (RGO) and bare graphene oxide (GO) using dip-coating method. The surface morphology of the conductive cotton yarn coated with reduced graphene oxide was observed by Scanning Electron Microscope (SEM). Due to the strong electrostatic attractive forces, the negatively charged surface such as the eosin Y functionalized reduced graphene oxide or bare GO can be easily coated to the positively charged polyethyleneimine (PEI) treated cotton yarn. The maximum current for the conductive cotton yarn coated with eosin Y functionalized RGO and bare GO with 20 cycles repetition of (5D + R) process was found to be 793.8 μA and 3482.8 μA. Our results showed that the electrical conductivity of bare GO coated conductive cotton yarn increased by approximately four orders of magnitude with the increase in the dipping cycle of (5D+R) process.

  5. Influence of implantation energy on the electrical properties of ultrathin gate oxides grown on nitrogen implanted Si substrates

    International Nuclear Information System (INIS)

    Kapetanakis, E.; Skarlatos, D.; Tsamis, C.; Normand, P.; Tsoukalas, D.

    2003-01-01

    Metal-oxide-semiconductor tunnel diodes with gate oxides, in the range of 2.5-3.5 nm, grown either on 25 or 3 keV nitrogen-implanted Si substrates at (0.3 or 1) x10 15 cm -2 dose, respectively, are investigated. The dependence of N 2 + ion implant energy on the electrical quality of the growing oxide layers is studied through capacitance, equivalent parallel conductance, and gate current measurements. Superior electrical characteristics in terms of interface state trap density, leakage current, and breakdown fields are found for oxides obtained through 3 keV nitrogen implants. These findings together with the full absence of any extended defect in the silicon substrate make the low-energy nitrogen implantation technique an attractive option for reproducible low-cost growth of nanometer-thick gate oxides

  6. A school-based, teacher-mediated prevention program (ERASE-Stress) for reducing terror-related traumatic reactions in Israeli youth: a quasi-randomized controlled trial.

    Science.gov (United States)

    Gelkopf, Marc; Berger, Rony

    2009-08-01

    Since September 2000 Israeli children have been exposed to a large number of terrorist attacks. A universal, school-based intervention for dealing with the threat of terrorism as well as with terror-related symptoms, ERASE-Stress (ES), was evaluated in a male religious middle school in southern Israel. The program was administered by the homeroom teachers as part of the school curriculum. It consists of 12 classroom sessions each lasting 90 minutes, and included psycho-educational material, skill training and resiliency strategies delivered to the students by homeroom teachers. One hundred and fourteen 7th and 8th grade students were randomly assigned to the ES intervention or were part of a waiting list (WL). They were assessed on measures of posttraumatic symptomatology, depression, somatic symptoms and functional problems before and 3 months after the intervention or the WL period. Three months after the program ended, students in the experimental group showed significant reduction in all measures compared to the waiting-list control group. The ERASE-Stress program may help students suffering from terror-related posttraumatic symptoms and mitigate the negative effects of future traumatic experiences. Furthermore, a school-based universal program such as the ERASE-Stress may potentially serve as an important and effective component of a community mental health policy for communities affected by terrorism.

  7. Structure, temperature and frequency dependent electrical conductivity of oxidized and reduced electrochemically exfoliated graphite

    Science.gov (United States)

    Radoń, Adrian; Włodarczyk, Patryk; Łukowiec, Dariusz

    2018-05-01

    The article presents the influence of reduction by hydrogen in statu nascendi and modification by hydrogen peroxide on the structure and electrical conductivity of electrochemically exfoliated graphite. It was confirmed that the electrochemical exfoliation can be used to produce oxidized nanographite with an average number of 25 graphene layers. The modified electrochemical exfoliated graphite and reduced electrochemical exfoliated graphite were characterized by high thermal stability, what was associated with removing of labile oxygen-containing groups. The presence of oxygen-containing groups was confirmed using Fourier-transform infrared spectroscopy. Influence of chemical modification by hydrogen and hydrogen peroxide on the electrical conductivity was determined in wide frequency (0.1 Hz-10 kHz) and temperature range (-50 °C-100 °C). Material modified by hydrogen peroxide (0.29 mS/cm at 0 °C) had the lowest electrical conductivity. This can be associated with oxidation of unstable functional groups and was also confirmed by analysis of Raman spectra. The removal of oxygen-containing functional groups by hydrogen in statu nascendi resulted in a 1000-fold increase in the electrical conductivity compared to the electrochemical exfoliated graphite.

  8. The origin of traps and the effect of nitrogen plasma in oxide-nitride-oxide structures for non-volatile memories

    International Nuclear Information System (INIS)

    Kim, W. S.; Kwak, D. W.; Oh, J. S.; Lee, D. W.; Cho, H. Y.

    2010-01-01

    Ultrathin oxide-nitride-oxide (ONO) dielectric stacked layers are fundamental structures of silicon-oxide-nitride-oxide-silicon (SONOS) non-volatile memory devices in which information is known to be stored as charges trapped in silicon nitride. Deep-level transient spectroscopy (DLTS) and a capacitance-voltage (CV) analysis were introduced to observe the trap behavior related to the memory effect in memory devices. The DLTS results verified that the nitride-related traps were a dominant factor in the memory effect. The energy of hole traps was 0.307 eV above the balance band. To improve the memory effects of the non-volatile memory devices with ONO structures, we introduced a nitrogen plasma treatment. After the N-plasma treatment, the flat-band voltage shift (ΔV FB ) was increased by about 1.5 times. The program and the erase (P-E) characteristics were also shown to be better than those for the as-ONO structure. In addition, the retention characteristics were improved by over 2.4 times.

  9. Ferroelectric transistors with monolayer molybdenum disulfide and ultra-thin aluminum-doped hafnium oxide

    Science.gov (United States)

    Yap, Wui Chung; Jiang, Hao; Liu, Jialun; Xia, Qiangfei; Zhu, Wenjuan

    2017-07-01

    In this letter, we demonstrate ferroelectric memory devices with monolayer molybdenum disulfide (MoS2) as the channel material and aluminum (Al)-doped hafnium oxide (HfO2) as the ferroelectric gate dielectric. Metal-ferroelectric-metal capacitors with 16 nm thick Al-doped HfO2 are fabricated, and a remnant polarization of 3 μC/cm2 under a program/erase voltage of 5 V is observed. The capability of potential 10 years data retention was estimated using extrapolation of the experimental data. Ferroelectric transistors based on embedded ferroelectric HfO2 and MoS2 grown by chemical vapor deposition are fabricated. Clockwise hysteresis is observed at low program/erase voltages due to slow bulk traps located near the 2D/dielectric interface, while counterclockwise hysteresis is observed at high program/erase voltages due to ferroelectric polarization. In addition, the endurances of the devices are tested, and the effects associated with ferroelectric materials, such as the wake-up effect and polarization fatigue, are observed. Reliable writing/reading in MoS2/Al-doped HfO2 ferroelectric transistors over 2 × 104 cycles is achieved. This research can potentially lead to advances of two-dimensional (2D) materials in low-power logic and memory applications.

  10. Electrical conductivity of activated carbon-metal oxide nanocomposites under compression: a comparison study.

    Science.gov (United States)

    Barroso-Bogeat, A; Alexandre-Franco, M; Fernández-González, C; Macías-García, A; Gómez-Serrano, V

    2014-12-07

    From a granular commercial activated carbon (AC) and six metal oxide (Al2O3, Fe2O3, SnO2, TiO2, WO3 and ZnO) precursors, two series of AC-metal oxide nanocomposites were prepared by wet impregnation, oven-drying at 120 °C, and subsequent heat treatment at 200 or 850 °C in an inert atmosphere. Here, the electrical conductivity of the resulting products was studied under moderate compression. The influence of the applied pressure, sample volume, mechanical work, and density of the hybrid materials was thoroughly investigated. The DC electrical conductivity of the compressed samples was measured at room temperature by the four-probe method. Compaction assays suggest that the mechanical properties of the nanocomposites are largely determined by the carbon matrix. Both the decrease in volume and the increase in density were relatively small and only significant at pressures lower than 100 kPa for AC and most nanocomposites. In contrast, the bulk electrical conductivity of the hybrid materials was strongly influenced by the intrinsic conductivity, mean crystallite size, content and chemical nature of the supported phases, which ultimately depend on the metal oxide precursor and heat treatment temperature. The supported nanoparticles may be considered to act as electrical switches either hindering or favouring the effective electron transport between the AC cores of neighbouring composite particles in contact under compression. Conductivity values as a rule were lower for the nanocomposites than for the raw AC, all of them falling in the range of semiconductor materials. With the increase in heat treatment temperature, the trend is toward the improvement of conductivity due to the increase in the crystallite size and, in some cases, to the formation of metals in the elemental state and even metal carbides. The patterns of variation of the electrical conductivity with pressure and mechanical work were slightly similar, thus suggesting the predominance of the pressure

  11. Electricity generation by direct oxidation of glucose in mediatorless microbial fuel cells.

    Science.gov (United States)

    Chaudhuri, Swades K; Lovley, Derek R

    2003-10-01

    Abundant energy, stored primarily in the form of carbohydrates, can be found in waste biomass from agricultural, municipal and industrial sources as well as in dedicated energy crops, such as corn and other grains. Potential strategies for deriving useful forms of energy from carbohydrates include production of ethanol and conversion to hydrogen, but these approaches face technical and economic hurdles. An alternative strategy is direct conversion of sugars to electrical power. Existing transition metal-catalyzed fuel cells cannot be used to generate electric power from carbohydrates. Alternatively, biofuel cells in which whole cells or isolated redox enzymes catalyze the oxidation of the sugar have been developed, but their applicability has been limited by several factors, including (i) the need to add electron-shuttling compounds that mediate electron transfer from the cell to the anode, (ii) incomplete oxidation of the sugars and (iii) lack of long-term stability of the fuel cells. Here we report on a novel microorganism, Rhodoferax ferrireducens, that can oxidize glucose to CO(2) and quantitatively transfer electrons to graphite electrodes without the need for an electron-shuttling mediator. Growth is supported by energy derived from the electron transfer process itself and results in stable, long-term power production.

  12. Homogeneous-oxide stack in IGZO thin-film transistors for multi-level-cell NAND memory application

    Science.gov (United States)

    Ji, Hao; Wei, Yehui; Zhang, Xinlei; Jiang, Ran

    2017-11-01

    A nonvolatile charge-trap-flash memory that is based on amorphous indium-gallium-zinc-oxide thin film transistors was fabricated with a homogeneous-oxide structure for a multi-level-cell application. All oxide layers, i.e., tunneling layer, charge trapping layer, and blocking layer, were fabricated with Al2O3 films. The fabrication condition (including temperature and deposition method) of the charge trapping layer was different from those of the other oxide layers. This device demonstrated a considerable large memory window of 4 V between the states fully erased and programmed with the operation voltage less than 14 V. This kind of device shows a good prospect for multi-level-cell memory applications.

  13. Erasing and blurring memories: The differential impact of interference on separate aspects of forgetting.

    Science.gov (United States)

    Sun, Sol Z; Fidalgo, Celia; Barense, Morgan D; Lee, Andy C H; Cant, Jonathan S; Ferber, Susanne

    2017-11-01

    Interference disrupts information processing across many timescales, from immediate perception to memory over short and long durations. The widely held similarity assumption states that as similarity between interfering information and memory contents increases, so too does the degree of impairment. However, information is lost from memory in different ways. For instance, studied content might be erased in an all-or-nothing manner. Alternatively, information may be retained but the precision might be degraded or blurred. Here, we asked whether the similarity of interfering information to memory contents might differentially impact these 2 aspects of forgetting. Observers studied colored images of real-world objects, each followed by a stream of interfering objects. Across 4 experiments, we manipulated the similarity between the studied object and the interfering objects in circular color space. After interference, memory for object color was tested continuously on a color wheel, which in combination with mixture modeling, allowed for estimation of how erasing and blurring differentially contribute to forgetting. In contrast to the similarity assumption, we show that highly dissimilar interfering items caused the greatest increase in random guess responses, suggesting a greater frequency of memory erasure (Experiments 1-3). Moreover, we found that observers were generally able to resist interference from highly similar items, perhaps through surround suppression (Experiments 1 and 4). Finally, we report that interference from items of intermediate similarity tended to blur or decrease memory precision (Experiments 3 and 4). These results reveal that the nature of visual similarity can differentially alter how information is lost from memory. (PsycINFO Database Record (c) 2017 APA, all rights reserved).

  14. Effect of aluminum oxide doping on the structural, electrical, and optical properties of zinc oxide (AOZO) nanofibers synthesized by electrospinning

    International Nuclear Information System (INIS)

    Lotus, A.F.; Kang, Y.C.; Walker, J.I.; Ramsier, R.D.; Chase, G.G.

    2010-01-01

    Zinc oxide nanofibers doped with aluminum oxide were prepared by sol-gel processing and electrospinning techniques using polyvinylpyrrolidone (PVP), zinc acetate and aluminum acetate as precursors. The resulting nanofibers were characterized by scanning electron microscopy (SEM), X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), UV-Vis spectroscopy, and current-voltage (I-V) properties. The nanofibers had diameters in the range of 60-150 nm. The incorporation of aluminum oxide resulted in a decrease in the crystallite sizes of the zinc oxide nanofibers. Aluminum oxide doped zinc oxide (AOZO) nanofibers exhibited lower bandgap energies compared to undoped zinc oxide nanofibers. However, as the aluminum content (Al/(Al + Zn) x 100%) was increased from 1.70 at.% to 3.20 at.% in the electrospinning solution, the bandgap energy increased resulting in lower conductivity. The electrical conductivity of the AOZO samples was found to depend on the amount of aluminum dopant in the matrix as reflected in the changes in oxidation state elucidated from XPS data. Electrospinning was found to be a productive, simple, and easy method for tuning the bandgap energy and conductivity of zinc oxide semiconducting nanofibers.

  15. Erasing the methyl mark: histone demethylases at the center of cellular differentiation and disease

    DEFF Research Database (Denmark)

    Cloos, Paul A C; Christensen, Jesper; Agger, Karl

    2008-01-01

    The enzymes catalyzing lysine and arginine methylation of histones are essential for maintaining transcriptional programs and determining cell fate and identity. Until recently, histone methylation was regarded irreversible. However, within the last few years, several families of histone...... demethylases erasing methyl marks associated with gene repression or activation have been identified, underscoring the plasticity and dynamic nature of histone methylation. Recent discoveries have revealed that histone demethylases take part in large multiprotein complexes synergizing with histone deacetylases......, histone methyltransferases, and nuclear receptors to control developmental and transcriptional programs. Here we review the emerging biochemical and biological functions of the histone demethylases and discuss their potential involvement in human diseases, including cancer....

  16. The change of electric field and of some other insulating properties during isochronal annealing in thermally poled Ge-doped silica films

    DEFF Research Database (Denmark)

    Liu, Q.M.; Poumellec, B.; Braga, D.

    2005-01-01

    induced electric field and other insulating properties like electron traps population and conductivity in high field. Concerning the change of the contrast at low dose arising from the poling electric field, we show that this field begins to disappear at around 450 degrees C and is erased completely...... at 650 degrees C. Using a larger dose allows measuring the change in conductivity contrast. We find a stability similar to the electric field with a disappearance around 450 similar to 650 degrees C. On the contrary, for intermediate dose, the contrast remains for larger annealing temperature. It allows...

  17. Electric radiation mapping of silver/zinc oxide nanoantennas by using electron holography

    Energy Technology Data Exchange (ETDEWEB)

    Sanchez, J. E.; Mendoza-Santoyo, F.; Cantu-Valle, J.; Velazquez-Salazar, J.; José Yacaman, M.; Ponce, A. [Department of Physics and Astronomy, University of Texas at San Antonio, San Antonio 78249 (United States); González, F. J. [Coordinación para la Innovación y la Aplicación de la Ciencia y la Tecnología, Universidad Autónoma de San Luís Potosí, San Luis Potosí 78210 (Mexico); Diaz de Leon, R. [Instituto Tecnológico de San Luis Potosí, San Luis Potosi 78437 (Mexico)

    2015-01-21

    In this work, we report the fabrication of self-assembled zinc oxide nanorods grown on pentagonal faces of silver nanowires by using microwaves irradiation. The nanostructures resemble a hierarchal nanoantenna and were used to study the far and near field electrical metal-semiconductor behavior from the electrical radiation pattern resulting from the phase map reconstruction obtained using off-axis electron holography. As a comparison, we use electric numerical approximations methods for a finite number of ZnO nanorods on the Ag nanowires and show that the electric radiation intensities maps match closely the experimental results obtained with electron holography. The time evolution of the radiation pattern as generated from the nanostructure was recorded under in-situ radio frequency signal stimulation, in which the generated electrical source amplitude and frequency were varied from 0 to 5 V and from 1 to 10 MHz, respectively. The phase maps obtained from electron holography show the change in the distribution of the electric radiation pattern for individual nanoantennas. The mapping of this electrical behavior is of the utmost importance to gain a complete understanding for the metal-semiconductor (Ag/ZnO) heterojunction that will help to show the mechanism through which these receiving/transmitting structures behave at nanoscale level.

  18. Empirical study of the metal-nitride-oxide-semiconductor device characteristics deduced from a microscopic model of memory traps

    International Nuclear Information System (INIS)

    Ngai, K.L.; Hsia, Y.

    1982-01-01

    A graded-nitride gate dielectric metal-nitride-oxide-semiconductor (MNOS) memory transistor exhibiting superior device characteristics is presented and analyzed based on a qualitative microscopic model of the memory traps. The model is further reviewed to interpret some generic properties of the MNOS memory transistors including memory window, erase-write speed, and the retention-endurance characteristic features

  19. Potential oxidative stress in the bodies of electric arc welding operators: effect of photochemical smog.

    Science.gov (United States)

    Zhu, You-Gen; Zhou, Jun-Fu; Shan, Wei-Ying; Zhou, Pei-Su; Tong, Gui-Zhong

    2004-12-01

    To investigate whether photochemical smog emitted during the process of electric arc welding might cause oxidative stress and potential oxidative damage in the bodies of welding operators. Seventy electric arc welding operators (WOs) and 70 healthy volunteers (HVs) were enrolled in a randomized controlled study design, in which the levels of vitamin C (VC) and vitamin E (VE) in plasma as well as the activities of superoxide dismutase (SOD), catalase (CAT) and glutathione peroxidase (GPX), and the level of lipoperoxide (LPO) in erythrocytes were determined by spectrophotometry. Compared with the average values of the above experimental parameters in the HVs group, the average values of VC and VE in plasma as well as those of SOD, CAT and GPX in erythrocytes in the WOs group were significantly decreased (P smog the values of VC, VE, SOD, and GPX, except for CAT, in the WOs were decreased gradually (P smog in the bodies of WOs, thereby causing potential oxidative and lipoperoxidative damages in their bodies.

  20. Lessons learned from unintended consequences about erasing the stigma of mental illness.

    Science.gov (United States)

    Corrigan, Patrick W

    2016-02-01

    Advocates and scientists have partnered to develop and evaluate programs meant to erase the egregious effects of the different forms of stigma. Enough evidence has been collected to yield lessons about approaches to stigma change. Some of the most insightful of these lessons emerge from unintended consequences of good intentioned approaches, and are the focus of this paper. They include the limited benefits of education especially when compared to contact, beating stigma is more than changing words, beware pity as a message, understand the competing agendas of stigma change, replace ideas of normalcy with solidarity, and avoid framing self-stigma as the problem of people with mental illness and not of society. The paper ends with consideration of the back seat role that psychiatrists and other mental health providers should have in stigma change. © 2015 World Psychiatric Association.

  1. Electrical properties of undoped zinc oxide nanostructures at different annealing temperature

    Energy Technology Data Exchange (ETDEWEB)

    Nasir, M. F., E-mail: babaibaik2002@yahoo.com; Zainol, M. N., E-mail: nizarzainol@yahoo.com; Hannas, M., E-mail: mhannas@gmail.com [NANO-ElecTronic Centre (NET), Faculty of Electrical Engineering, Universiti Teknologi MARA (UiTM), 40450 Shah Alam, Selangor (Malaysia); Mamat, M. H., E-mail: mhmamat@salam.uitm.edu.my; Rusop, Mohamad, E-mail: rusop@salam.uitm.edu.my [NANO-ElecTronic Centre (NET), Faculty of Electrical Engineering, Universiti Teknologi MARA (UiTM), 40450 Shah Alam, Selangor (Malaysia); NANO-SciTech Centre (NST), Institute of Science (IOS), Universiti Teknologi MARA - UiTM, 40450 Shah Alam, Selangor (Malaysia); Rahman, S. A., E-mail: saadah@um.edu.my [NANO-ElecTronic Centre (NET), Faculty of Electrical Engineering, Universiti Teknologi MARA (UiTM), 40450 Shah Alam, Selangor (Malaysia); Low Dimensional Materials Research Centre, Physics Department, Faculty of Science, University of Malaya, 50603 Kuala Lumpur (Malaysia)

    2016-07-06

    This project has been focused on the electrical and optical properties respectively on the effect of Undoped zinc oxide (ZnO) thin films at different annealing temperature which is varied 400 °C, 450 °C, 500 °C, and 550 °C.Undoped ZnO solutions were deposited onto the glass substrates using sol-gel spin coating method. This project was involved with three phases, which are thin films preparation, deposition and characterization. The thin films were characterized using Current Voltage (I-V) measurement and UV-vis-NIR spectrophotometer for electrical properties and optical properties. The electrical properties show that the resistivity is the lowest at 500 °C which its resistivity is 5.36 × 10{sup 4} Ωcm{sup −1}. The absorption coefficient spectrum obtained from UV-Vis-NIR spectrophotometer measurement shows all films exhibit very low absorption in the visible (400-800 nm) and near infrared (NIR) (>800 nm) range but exhibit high absorption in the UV range.

  2. The iron and cerium oxide influence on the electric conductivity and the corrosion resistance of anodized aluminium

    International Nuclear Information System (INIS)

    Souza, Kellie Provazi de

    2006-01-01

    The influence of different treatments on the aluminum system covered with aluminum oxide is investigated. The aluminum anodization in sulphuric media and in mixed sulphuric and phosphoric media was used to alter the corrosion resistance, thickness, coverage degree and microhardness of the anodic oxide. Iron electrodeposition inside the anodic oxide was used to change its electric conductivity and corrosion resistance. Direct and pulsed current were used for iron electrodeposition and the Fe(SO 4 ) 2 (NH 4 ) 2 .6H 2 O electrolyte composition was changed with the addition of boric and ascorbic acids. To the sealing treatment the CeCl 3 composition was varied. The energy dispersive x-ray (EDS), the x-ray fluorescence spectroscopy (FRX) and the morphologic analysis by scanning electronic microscopy (SEM) allowed to verify that, the pulsed current increase the iron content inside the anodic layer and that the use of the additives inhibits the iron oxidation. The chronopotentiometric curves obtained during iron electrodeposition indicated that the boric and ascorbic acids mixture increased the electrodeposition process efficiency. The electrochemical impedance spectroscopy (EIE), the Vickers (Hv) microhardness measurements and morphologic analysis evidenced that the sealing treatment improves the corrosion resistance of the anodic film modified with iron. The electrical impedance (EI) technique allowed to prove the electric conductivity increase of the anodized aluminum with iron electrodeposited even after the cerium low concentration treatment. Iron nanowires were prepared by using the anodic oxide pores as template. (author)

  3. Mechanistic analysis of temperature-dependent current conduction through thin tunnel oxide in n+-polySi/SiO2/n+-Si structures

    Science.gov (United States)

    Samanta, Piyas

    2017-09-01

    We present a detailed investigation on temperature-dependent current conduction through thin tunnel oxides grown on degenerately doped n-type silicon (n+-Si) under positive bias ( VG ) on heavily doped n-type polycrystalline silicon (n+-polySi) gate in metal-oxide-semiconductor devices. The leakage current measured between 298 and 573 K and at oxide fields ranging from 6 to 10 MV/cm is primarily attributed to Poole-Frenkel (PF) emission of trapped electrons from the neutral electron traps located in the silicon dioxide (SiO2) band gap in addition to Fowler-Nordheim (FN) tunneling of electrons from n+-Si acting as the drain node in FLOating gate Tunnel OXide Electrically Erasable Programmable Read-Only Memory devices. Process-induced neutral electron traps are located at 0.18 eV and 0.9 eV below the SiO2 conduction band. Throughout the temperature range studied here, PF emission current IPF dominates FN electron tunneling current IFN at oxide electric fields Eox between 6 and 10 MV/cm. A physics based new analytical formula has been developed for FN tunneling of electrons from the accumulation layer of degenerate semiconductors at a wide range of temperatures incorporating the image force barrier rounding effect. FN tunneling has been formulated in the framework of Wentzel-Kramers-Brilloiun taking into account the correction factor due to abrupt variation of the energy barrier at the cathode/oxide interface. The effect of interfacial and near-interfacial trapped-oxide charges on FN tunneling has also been investigated in detail at positive VG . The mechanism of leakage current conduction through SiO2 films plays a crucial role in simulation of time-dependent dielectric breakdown of the memory devices and to precisely predict the normal operating field or applied floating gate (FG) voltage for lifetime projection of the devices. In addition, we present theoretical results showing the effect of drain doping concentration on the FG leakage current.

  4. Engine-integrated solid oxide fuel cells for efficient electrical power generation on aircraft

    Science.gov (United States)

    Waters, Daniel F.; Cadou, Christopher P.

    2015-06-01

    This work investigates the use of engine-integrated catalytic partial oxidation (CPOx) reactors and solid oxide fuel cells (SOFCs) to reduce fuel burn in vehicles with large electrical loads like sensor-laden unmanned air vehicles. Thermodynamic models of SOFCs, CPOx reactors, and three gas turbine (GT) engine types (turbojet, combined exhaust turbofan, separate exhaust turbofan) are developed and checked against relevant data and source material. Fuel efficiency is increased by 4% and 8% in the 50 kW and 90 kW separate exhaust turbofan systems respectively at only modest cost in specific power (8% and 13% reductions respectively). Similar results are achieved in other engine types. An additional benefit of hybridization is the ability to provide more electric power (factors of 3 or more in some cases) than generator-based systems before encountering turbine inlet temperature limits. A sensitivity analysis shows that the most important parameters affecting the system's performance are operating voltage, percent fuel oxidation, and SOFC assembly air flows. Taken together, this study shows that it is possible to create a GT-SOFC hybrid where the GT mitigates balance of plant losses and the SOFC raises overall system efficiency. The result is a synergistic system with better overall performance than stand-alone components.

  5. Nanoionics phenomenon in proton-conducting oxide: Effect of dispersion of nanosize platinum particles on electrical conduction properties

    Directory of Open Access Journals (Sweden)

    Hiroshige Matsumoto et al

    2007-01-01

    Full Text Available High-temperature proton conductors are oxides in which low-valence cations are doped as electron acceptors; the incorporation of water molecules into the oxides results in the formation of protonic defects that act as charge carriers. Since the protons thus formed are in equilibrium with other electronic defects, electrons and holes, the oxides possibly have different proton-conduction properties at and near boundaries when they are in contact with another phase. In this paper, we present our recent experimental observation of a marked change in the electrical properties of a proton conductor upon the dispersal of fine platinum particles in the oxide. First, the material shows extremely low electrical conductivity in comparison with the original proton-conducting perovskite. Second, there was a threshold amount of platinum at which such a drop in conductivity occurred. A percolation model is employed to explain these experimental results; the fine platinum particles dispersed in the proton-conducting oxide wears highly resistive skin that is formed due to shifts in defect equilibriums, which prevents ionic/electronic conduction. The experiments suggest that the ion-conducting properties of oxides can be varied by introducing interfaces at a certain density; nanoionics is a key to yielding enhanced and/or controlled ionic conduction in solids.

  6. Electrical Properties of Electrospun Sb-Doped Tin Oxide Nanofibers

    International Nuclear Information System (INIS)

    Leon-Brito, Neliza; Melendez, Anamaris; Ramos, Idalia; Pinto, Nicholas J; Santiago-Aviles, Jorge J

    2007-01-01

    Transparent and conducting tin oxide fibers are of considerable interest for solar energy conversion, sensors and in various electrode applications. Appropriate doping can further enhance the conductivity of the fibers without loosing optical transparency. Undoped and antimony-doped tin oxide fibers have been synthesized by our group in previous work using electrospinning and metallorganic decomposition techniques. The undoped tin oxide fibers were obtained using a mixture of pure tin oxide sol made from tin (IV) chloride : water : propanol : isopropanol at a molar ratio of 1:9:9:6, and a viscous solution made from poly(ethylene oxide) (PEO) and chloroform at a ratio of 200 mg PEO/10 mL chloroform. In this work, antimony doped fibers were obtained by adding a dopant solution of antimony trichloride and isopropanol at a ratio of 2.2812 g antimony trichloride/10 ml isopropanol to the original tin oxide precursor solution. The Sb concentration in the precursor solution is 1.5%. After deposition, the fibers were sintered 600deg. C in air for two hours. The electrical conductivity of single fibers measured at room temperature increases by up to three orders of magnitude when compared to undoped fibers prepared using the same method. The resistivity change as a function of the annealing temperature can be attributed to the thermally activated formation of a nearly stoichoimetric solid. The resistivity of the fibers changes monotonically with temperature from 714Ω-cm at 2 K to 0.1Ω-cm at 300 K. In the temperature range from 2 to 8 K the fibers have a positive magnetoresistance (MR) with the highest value of 155 % at 2 K and ±9 T. At temperatures of 10 and 12 K the sign of MR changes to negative values for low magnetic fields and positive for high magnetic fields. For higher temperatures (15 K and above) the MR becomes negative and its magnitude decreases with temperature

  7. Effects of vacuum annealing on the optical and electrical properties of p-type copper-oxide thin-film transistors

    International Nuclear Information System (INIS)

    Sohn, Joonsung; Song, Sang-Hun; Kwon, Hyuck-In; Nam, Dong-Woo; Cho, In-Tak; Lee, Jong-Ho; Cho, Eou-Sik

    2013-01-01

    We have investigated the effects of vacuum annealing on the optical and electrical properties of the p-type copper-oxide thin-film transistors (TFTs). The vacuum annealing of the copper-oxide thin-film was performed using the RF magnetron sputter at various temperatures. From the x-ray diffraction and UV-vis spectroscopy, it is demonstrated that the high-temperature vacuum annealing reduces the copper-oxide phase from CuO to Cu 2 O, and increases the optical transmittance in the visible part of the spectrum. The fabricated copper-oxide TFT does not exhibit the switching behavior under low-temperature vacuum annealing conditions. However, as the annealing temperature increases, the drain current begins to be modulated by a gate voltage, and the TFT exhibits a high current on–off ratio over 10 4 as the vacuum annealing temperature increases over 450 °C. These results show that the vacuum annealing process can be an effective method of simultaneously improving the optical and electrical performances in p-type copper-oxide TFTs. (paper)

  8. Correction: Large-scale electricity storage utilizing reversible solid oxide cells combined with underground storage of CO2 and CH4

    DEFF Research Database (Denmark)

    Jensen, Søren Højgaard; Graves, Christopher R.; Mogensen, Mogens Bjerg

    2017-01-01

    Correction for ‘Large-scale electricity storage utilizing reversible solid oxide cells combined with underground storage of CO2 and CH4’ by S. H. Jensen et al., Energy Environ. Sci., 2015, 8, 2471–2479.......Correction for ‘Large-scale electricity storage utilizing reversible solid oxide cells combined with underground storage of CO2 and CH4’ by S. H. Jensen et al., Energy Environ. Sci., 2015, 8, 2471–2479....

  9. Characterization and Electrical Response to Humidity of Sintered Polymeric Electrospun Fibers of Vanadium Oxide-({TiO}_{{2}} /{WO}_{{3}} )

    Science.gov (United States)

    Araújo, E. S.; Libardi, J.; Faia, P. M.; de Oliveira, H. P.

    2018-02-01

    Metal oxide composites have attracted much consideration due to their promising applications in humidity sensors in response to the physical and chemical property modifications of the resulting materials. This work focused on the preparation, microstructural characterization and analysis of humidity-dependent electrical properties of undoped and vanadium oxide (V2O5)-doped titanium oxide/tungsten oxide (TiO2/WO3) sintered ceramic films obtained by electrospinning. The electrical properties were investigated by impedance spectroscopy (400 Hz-40 MHz) as a function of relative humidity (RH). The results revealed a typical transition in the transport mechanisms controlled by the appropriated doping level of V2O5, which introduces important advantages to RH detection due to the atomic substitution of titanium by vanadium atoms in highly doped structures. These aspects are directly related to the microstructure modification and structure fabrication procedure.

  10. GAMMA RADIATION INTERACTS WITH MELANIN TO ALTER ITS OXIDATION-REDUCTION POTENTIAL AND RESULTS IN ELECTRIC CURRENT PRODUCTION

    Energy Technology Data Exchange (ETDEWEB)

    Turick, C.; Ekechukwu, A.; Milliken, C.

    2011-05-17

    The presence of melanin pigments in organisms is implicated in radioprotection and in some cases, enhanced growth in the presence of high levels of ionizing radiation. An understanding of this phenomenon will be useful in the design of radioprotective materials. However, the protective mechanism of microbial melanin in ionizing radiation fields has not yet been elucidated. Here we demonstrate through the electrochemical techniques of chronoamperometry, chronopotentiometry and cyclic voltammetry that microbial melanin is continuously oxidized in the presence of gamma radiation. Our findings establish that ionizing radiation interacts with melanin to alter its oxidation-reduction potential. Sustained oxidation resulted in electric current production and was most pronounced in the presence of a reductant, which extended the redox cycling capacity of melanin. This work is the first to establish that gamma radiation alters the oxidation-reduction behavior of melanin, resulting in electric current production. The significance of the work is that it provides the first step in understanding the initial interactions between melanin and ionizing radiation taking place and offers some insight for production of biomimetic radioprotective materials.

  11. Influence of oxidation temperature on photoluminescence and electrical properties of amorphous thin film SiC:H:O+Tb

    Energy Technology Data Exchange (ETDEWEB)

    Gordienko, S.O.; Nazarov, A.N.; Rusavsky, A.V.; Vasin, A.V.; Gomeniuk, Yu.V.; Lysenko, V.S.; Strelchuk, V.V.; Nikolaenko, A.S. [Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine, Prospekt Nauki 41, 03028 Kyiv (Ukraine); Ashok, S. [The Pennsylvania State University, Department of Engineering Science, 212 Earth and Engineering Science Bldg., University Park, PA 16802 (United States)

    2011-09-15

    The influence of low-temperature oxidation on chemical composition, luminescent and electrical properties of a-Si{sub 1-x}C{sub x}:H thin films fabricated by reactive RF magnetron sputtering has been studied. A strong dependence on RF sputtering power is seen on the electrical and chemical properties. The a-Si{sub 1-x}C{sub x}:H films fabricated by low RF power levels followed by low-temperature oxidation (at 450 C-500 C) display high intensity of PL, good MOSCV characteristic and low leakage current through the dielectric. Increase of oxidation temperature increases precipitation of carbon nano-inclusions in the materials, that result in reduction of PL intensity and increase of dielectric leakage. (copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  12. Apollo guidance, navigation and control: Guidance system operations plans for manned LM earth orbital and lunar missions using Program COLOSSUS 3. Section 7: Erasable memory programs

    Science.gov (United States)

    Hamilton, M. H.

    1972-01-01

    Erasable-memory programs (EMPs) designed for the guidance computers used in the command (CMC) and lunar modules (LGC) are described. CMC programs are designated COLOSSUS 3, and the associated EMPs are identified by a three-digit number beginning with 5. LGC programs are designated LUMINARY 1E, and the associated EMPs are identified, with one exception, by a three-digit number beginning with 1. The exception is EMP 99. The EMPs vary in complexity from a simple flagbit setting to a long and intricate logical structure. They all, however, cause the computer to behave in a way not intended in the original design of the programs; they accomplish this off-nominal behavior by some alteration of erasable memory to interface with existing fixed-memory programs to effect a desired result.

  13. Interfacial and electrical properties of HfAlO/GaSb metal-oxide-semiconductor capacitors with sulfur passivation

    International Nuclear Information System (INIS)

    Tan Zhen; Zhao Lian-Feng; Wang Jing; Xu Jun

    2014-01-01

    Interfacial and electrical properties of HfAlO/GaSb metal-oxide-semiconductor capacitors (MOSCAPs) with sulfur passivation were investigated and the chemical mechanisms of the sulfur passivation process were carefully studied. It was shown that the sulfur passivation treatment could reduce the interface trap density D it of the HfAlO/GaSb interface by 35% and reduce the equivalent oxide thickness (EOT) from 8 nm to 4 nm. The improved properties are due to the removal of the native oxide layer, as was proven by x-ray photoelectron spectroscopy measurements and high-resolution cross-sectional transmission electron microscopy (HRXTEM) results. It was also found that GaSb-based MOSCAPs with HfAlO gate dielectrics have interfacial properties superior to those using HfO 2 or Al 2 O 3 dielectric layers. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

  14. Spectroscopic and electrical sensing mechanism in oxidant-mediated polypyrrole nanofibers/nanoparticles for ammonia gas

    International Nuclear Information System (INIS)

    Ishpal; Kaur, Amarjeet

    2013-01-01

    Ammonia gas sensing mechanism in oxidant-mediated polypyrrole (PPy) nanofibers/nanoparticles has been studied through spectroscopic and electrical investigations. PPy nanofibers/nanoparticles have been synthesized by chemical oxidation method in the presence of various oxidizing agents such as ammonium persulfate (APS), potassium persulfate (PPS), vanadium pentoxide (V 2 O 5 ), and iron chloride (FeCl 3 ). Scanning electron microscopy study revealed that PPy nanofibers of about 63, 71 and 79 nm diameters were formed in the presence of APS, PPS, V 2 O 5 , respectively, while PPy nanoparticles of about 100–110 nm size were obtained in the presence of FeCl 3 as an oxidant. The structural investigations and confirmation of synthesis of PPy were established through Fourier transform infrared and Raman spectroscopy. The gas sensing behavior of the prepared PPy samples is investigated by measuring the electrical resistance in ammonia environment. The observed gas sensing response (ΔR/Rx100) at 100 ppm level of ammonia is ∼4.5 and 18 % for the samples prepared with oxidizing agents FeCl 3 and APS, respectively, and by changing the ammonia level from 50 to 300 ppm, the sensing response varies from ∼4.5 to 11 % and ∼10 to 39 %, respectively. Out of all four samples, the PPy nanofibers prepared in the presence of APS have shown the best sensing response. The mechanism of gas sensing response of the PPy samples has been investigated through Raman spectroscopy study. The decrease of charge carrier concentration through reduction of polymeric chains has been recognized through Raman spectroscopic measurements recorded in ammonia environment.

  15. Electric-Loading Enhanced Kinetics in Oxide Ceramics: Pore Migration, Sintering and Grain Growth: Final Report

    Energy Technology Data Exchange (ETDEWEB)

    Chen, I-Wei [Univ. of Pennsylvania, Philadelphia, PA (United States). Dept. of Materials Science & Engineering

    2018-02-02

    Solid oxide fuel cells and solid oxide electrolysis cells rely on solid electrolytes in which a large ionic current dominates. This project was initiated to investigate microstructural changes in such devices under electrochemical forces, because nominally insignificant processes may couple to the large ionic current to yield non-equilibrium phenomena that alter the microstructure. Our studies had focused on yttria-stabilized cubic zirconia (YSZ) widely used in these devices. The experiments have revealed enhanced grain growth at higher temperatures, pore and gas bubble migration at all temperatures, and the latter also lead to enhanced sintering of highly porous ceramics into fully dense ceramics at unprecedentedly low temperatures. These results have shed light on kinetic processes that fall completely outside the realm of classical ceramic processing. Other fast-oxygen oxide ceramics closely related to, and often used in conjunction with zirconia ceramics, have also be investigated, as are closely related scientific problems in zirconia ceramics. These include crystal structures, defects, diffusion kinetics, oxygen potentials, low temperature sintering, flash sintering, and coarsening theory, and all have resulted in greater clarity in scientific understanding. The knowledge is leveraged to provide new insight to electrode kinetics and near-electrode mixed conductivity and to new materials. In the following areas, our research has resulted in completely new knowledge that defines the state-of-the-art of the field. (a) Electrical current driven non-equilibrium phenomena, (b) Enhanced grain growth under electrochemically reducing conditions, (c) Development of oxygen potential polarization in electrically loaded electrolyte, (d) Low temperature sintering and grain growth, and (e) Structure, defects and cation kinetics of fluorite-structured oxides. Our research has also contributed to synthesis of new energy-relevant electrochemical materials and new understanding

  16. Dissociating response systems: erasing fear from memory.

    Science.gov (United States)

    Soeter, Marieke; Kindt, Merel

    2010-07-01

    interventions persistently erasing fear responses from trauma memory without affecting the actual recollection.

  17. The comparison of gamma-radiation and electrical stress influences on oxide and interface defects in power VDMOSFET

    Directory of Open Access Journals (Sweden)

    Đorić-Veljković Snežana M.

    2013-01-01

    Full Text Available The behaviour of oxide and interface defects in n-channel power vertical double-diffused metal-oxide-semiconductor field-effect transistors, firstly degraded by the gamma-irradiation and electric field and subsequently recovered and annealed, is presented. By analyzing the transfer characteristic shifts, the changes of threshold voltage and underlying changes of gate oxide and interface trap densities during the stress (recovery, annealing of investigated devices, it is shown that these two types of stress influence differently on the gate oxide and the SiO2-Si interface. [Projekat Ministarstva nauke Republike Srbije, br. OI171026

  18. Electrical and physical characteristics for crystalline atomic layer deposited beryllium oxide thin film on Si and GaAs substrates

    International Nuclear Information System (INIS)

    Yum, J.H.; Akyol, T.; Lei, M.; Ferrer, D.A.; Hudnall, Todd W.; Downer, M.; Bielawski, C.W.; Bersuker, G.; Lee, J.C.; Banerjee, S.K.

    2012-01-01

    In a previous study, atomic layer deposited (ALD) BeO exhibited less interface defect density and hysteresis, as well as less frequency dispersion and leakage current density, at the same equivalent oxide thickness than Al 2 O 3 . Furthermore, its self-cleaning effect was better. In this study, the physical and electrical characteristics of ALD BeO grown on Si and GaAs substrates are further evaluated as a gate dielectric layer in III–V metal-oxide-semiconductor devices using transmission electron microscopy, selective area electron diffraction, second harmonic generation, and electrical analysis. An as-grown ALD BeO thin film was revealed as a layered single crystal structure, unlike the well-known ALD dielectrics that exhibit either poly-crystalline or amorphous structures. Low defect density in highly ordered ALD BeO film, less variability in electrical characteristics, and great stability under electrical stress were demonstrated. - Highlights: ► BeO is an excellent electrical insulator, but good thermal conductor. ► Highly crystalline film of BeO has been grown using atomic layer deposition. ► An ALD BeO precursor, which is not commercially available, has been synthesized. ► Physical and electrical characteristics have been investigated.

  19. Effect of Source/Drain Electrodes on the Electrical Properties of Silicon–Tin Oxide Thin-Film Transistors

    Directory of Open Access Journals (Sweden)

    Xianzhe Liu

    2018-05-01

    Full Text Available Ultra-high definition displays have become a trend for the current flat plane displays. In this study, the contact properties of amorphous silicon–tin oxide thin-film transistors (a-STO TFTs employed with source/drain (S/D electrodes were analyzed. Ohmic contact with a good device performance was achieved when a-STO was matched with indium-tin-oxide (ITO or Mo electrodes. The acceptor-like densities of trap states (DOS of a-STO TFTs were further investigated by using low-frequency capacitance–voltage (C–V characteristics to understand the impact of the electrode on the device performance. The reason of the distinct electrical performances of the devices with ITO and Mo contacts was attributed to different DOS caused by the generation of local defect states near the electrodes, which distorted the electric field distribution and formed an electrical potential barrier hindering the flow of electrons. It is of significant importance for circuit designers to design reliable integrated circuits with SnO2-based devices applied in flat panel displays.

  20. Oxidation effects on the electric resistance of In and Al in thin layers

    International Nuclear Information System (INIS)

    Moncada, G.; Araya, J.; Clark, N.

    1981-01-01

    Measurements of electric resistance (R) in function of the time in evaporated samples of thin layers of In and Al trivalent elements in both vacuum and atmospheric pressure are reported. Measurements in samples at ambient and cooled with nitrogen temperatures taken place. The changes observed in R is attributed partly to changes in the sample surface produced by the oxidation. (L.C.) [pt

  1. Effects of thermal oxidation duration on the structural and electrical properties of Nd{sub 2}O{sub 3}/Si system

    Energy Technology Data Exchange (ETDEWEB)

    Hetherin, Karuppiah; Ramesh, S.; Wong, Yew Hoong [University of Malaya, Department of Mechanical Engineering, Faculty of Engineering, Kuala Lumpur (Malaysia)

    2017-08-15

    A study on the growth, structure and electrical properties of Nd{sub 2}O{sub 3} was carried out experimentally on RF sputtered thin film on Si followed by thermal oxidation at 700 C at different oxidation durations (5, 10, 15 and 20 min). The structural and chemical properties were studied by X-ray diffraction analysis, Fourier transform infrared analysis, Raman analysis and high resolution transmission electron microscopy analysis. The formation of cubic-Nd{sub 2}O{sub 3}, orthorhombic-Nd{sub 2}Si{sub 2}O{sub 7}, monoclinic-SiO{sub 2}, tetragonal-SiO{sub 2} and hexagonal-SiO{sub 2} was detected. A single interfacial layer was detected for the sample oxidized at 15 min and double interfacial layers were detected for the samples oxidized at 5, 10 and 20 min. The sample oxidized at 15 min possessed the best electrical properties which were attributed by the highest Nd{sub 2}O{sub 3} intensity, largest SiO{sub 2} crystallite structure, thinnest interfacial and oxide layer, highest barrier height, lowest effective oxide charges, slow trap density and average interface trap density. (orig.)

  2. Improvement in electrical characteristics of eco-friendly indium zinc oxide thin-film transistors by photocatalytic reaction.

    Science.gov (United States)

    Kang, Jun Ki; Park, Sung Pyo; Na, Jae Won; Lee, Jin Hyeok; Kim, Dongwoo; Kim, Hyun Jae

    2018-05-11

    Eco-friendly solution-processed oxide thin-film transistors (TFTs) were fabricated through photocatalytic reaction of titanium dioxide (PRT). The titanium dioxide (TiO 2 ) surface reacts with H 2 O under ultraviolet (UV) light irradiation and generates hydroxyl radicals (OH∙). These hydroxyl radicals accelerate the decomposition of large organic compounds such as 2-methoxyethanol (2ME; one of the representative solvents for solution-processed metal oxides), creating smaller organic molecular structures compared with 2ME. The decomposed small organic materials have low molar masses and low boiling points, which help improving electrical properties via diminishing defect sites in oxide channel layers and fabricating low temperature solution-processed oxide TFTs. As a result, the field-effect mobility improved from 4.29 to 10.24 cm 2 /V·s for IGZO TFTs and from 2.78 to 7.82 cm 2 /V·s for IZO TFTs, and the V th shift caused by positive bias stress (PBS) and negative bias illumination stress (NBIS) over 1,000 s under 5,700 lux decreased from 6.2 to 2.9 V and from 15.3 to 2.8 V, respectively. In theory, TiO 2 has a permanent photocatalytic reaction; as such, hydroxyl radicals are generated continuously under UV irradiation, improving the electrical characteristics of solution-processed IZO TFTs even after four iterations of TiO 2 recycling in this study. Thus, the PRT method provides an eco-friendly approach for high-performance solution-processed oxide TFTs.

  3. Electric terminal performance and characterization of solid oxide fuel cells and systems

    Science.gov (United States)

    Lindahl, Peter Allan

    Solid Oxide Fuel Cells (SOFCs) are electrochemical devices which can effect efficient, clean, and quiet conversion of chemical to electrical energy. In contrast to conventional electricity generation systems which feature multiple discrete energy conversion processes, SOFCs are direct energy conversion devices. That is, they feature a fully integrated chemical to electrical energy conversion process where the electric load demanded of the cell intrinsically drives the electrochemical reactions and associated processes internal to the cell. As a result, the cell's electric terminals provide a path for interaction between load side electric demand and the conversion side processes. The implication of this is twofold. First, the magnitude and dynamic characteristics of the electric load demanded of the cell can directly impact the long-term efficacy of the cell's chemical to electrical energy conversion. Second, the electric terminal response to dynamic loads can be exploited for monitoring the cell's conversion side processes and used in diagnostic analysis and degradation-mitigating control schemes. This dissertation presents a multi-tier investigation into this electric terminal based performance characterization of SOFCs through the development of novel test systems, analysis techniques and control schemes. First, a reference-based simulation system is introduced. This system scales up the electric terminal performance of a prototype SOFC system, e.g. a single fuel cell, to that of a full power-level stack. This allows realistic stack/load interaction studies while maintaining explicit ability for post-test analysis of the prototype system. Next, a time-domain least squares fitting method for electrochemical impedance spectroscopy (EIS) is developed for reduced-time monitoring of the electrochemical and physicochemical mechanics of the fuel cell through its electric terminals. The utility of the reference-based simulator and the EIS technique are demonstrated

  4. Pyrochlore type semiconducting ceramic oxides in Ca-Ce-Ti-M-O system (M = Nb or Ta)-Structure, microstructure and electrical properties

    International Nuclear Information System (INIS)

    Deepa, M.; Prabhakar Rao, P.; Radhakrishnan, A.N.; Sibi, K.S.; Koshy, Peter

    2009-01-01

    A new series of pyrochlore type ceramic semiconducting oxides in Ca-Ce-Ti-M-O (M = Nb or Ta) system has been synthesized by the conventional ceramic route. The electrical conductivity measurements show that these oxides exhibit semiconducting behavior and the conductivity increases with the Ce content in the compound. Activation energy of the current carriers is in the range of 0.5-1.6 eV. The electrical conductivity in these oxides is due to the presence of Ce 3+ , which remains in the reduced state without being oxidized to Ce 4+ by structural stabilization. The photoluminescence and X-ray photoelectron spectroscopy analysis corroborate the presence of Ce in the 3+ state. Impedance spectral analysis is carried out to evaluate the transport properties and indicates that the conduction in these compounds is mainly due to electronic contribution. The X-ray powder diffraction and Raman spectroscopy analysis establishes that these oxides belong to a cubic pyrochlore type structure.

  5. Pyrochlore type semiconducting ceramic oxides in Ca-Ce-Ti-M-O system (M = Nb or Ta)-Structure, microstructure and electrical properties

    Energy Technology Data Exchange (ETDEWEB)

    Deepa, M. [Materials and Minerals Division, National Institute for Interdisciplinary Science and Technology (NIIST), Trivandrum 695019 (India); Prabhakar Rao, P., E-mail: padala_rao@yahoo.com [Materials and Minerals Division, National Institute for Interdisciplinary Science and Technology (NIIST), Trivandrum 695019 (India); Radhakrishnan, A.N.; Sibi, K.S.; Koshy, Peter [Materials and Minerals Division, National Institute for Interdisciplinary Science and Technology (NIIST), Trivandrum 695019 (India)

    2009-07-01

    A new series of pyrochlore type ceramic semiconducting oxides in Ca-Ce-Ti-M-O (M = Nb or Ta) system has been synthesized by the conventional ceramic route. The electrical conductivity measurements show that these oxides exhibit semiconducting behavior and the conductivity increases with the Ce content in the compound. Activation energy of the current carriers is in the range of 0.5-1.6 eV. The electrical conductivity in these oxides is due to the presence of Ce{sup 3+}, which remains in the reduced state without being oxidized to Ce{sup 4+} by structural stabilization. The photoluminescence and X-ray photoelectron spectroscopy analysis corroborate the presence of Ce in the 3+ state. Impedance spectral analysis is carried out to evaluate the transport properties and indicates that the conduction in these compounds is mainly due to electronic contribution. The X-ray powder diffraction and Raman spectroscopy analysis establishes that these oxides belong to a cubic pyrochlore type structure.

  6. Effect of rapid oxidation on optical and electrical properties of silicon nanowires obtained by chemical etching

    Science.gov (United States)

    Karyaoui, M.; Bardaoui, A.; Ben Rabha, M.; Harmand, J. C.; Amlouk, M.

    2012-05-01

    In the present work, we report the investigation of passivated silicon nanowires (SiNWs) having an average radius of 3.7 μm, obtained by chemical etching of p-type silicon (p-Si). The surface passivation of the SiNWs was performed through a rapid oxidation conducted under a controlled atmosphere at different temperatures and durations. The morphology of the SiNWs was examined using a scanning electron microscope (SEM) that revealed a wave-like structure of dense and vertically aligned one-dimensional silicon nanostructures. On the other hand, optical and electrical characterizations of the SiNWs were studied using a UV-Vis-NIR spectrometer, the Fourier transform infrared spectroscopy (FTIR) and I-V measurements. The reflectance of SiNWs has been dropped to approximately 2% in comparison to that of bare p-Si. This low reflectance slightly increased after carrying out the rapid thermal annealing. The observed behavior was attributed to the formation of a SiO2 layer, as confirmed by FTIR measurements. Finally, the electrical measurements have shown that the rapid oxidation, at certain conditions, contributes to the improvement of the electrical responses of the SiNWs, which can be of great interest for photovoltaic applications.

  7. Physical and electrical characterizations of AlGaN/GaN MOS gate stacks with AlGaN surface oxidation treatment

    Science.gov (United States)

    Yamada, Takahiro; Watanabe, Kenta; Nozaki, Mikito; Shih, Hong-An; Nakazawa, Satoshi; Anda, Yoshiharu; Ueda, Tetsuzo; Yoshigoe, Akitaka; Hosoi, Takuji; Shimura, Takayoshi; Watanabe, Heiji

    2018-06-01

    The impacts of inserting ultrathin oxides into insulator/AlGaN interfaces on their electrical properties were investigated to develop advanced AlGaN/GaN metal–oxide–semiconductor (MOS) gate stacks. For this purpose, the initial thermal oxidation of AlGaN surfaces in oxygen ambient was systematically studied by synchrotron radiation X-ray photoelectron spectroscopy (SR-XPS) and atomic force microscopy (AFM). Our physical characterizations revealed that, when compared with GaN surfaces, aluminum addition promotes the initial oxidation of AlGaN surfaces at temperatures of around 400 °C, followed by smaller grain growth above 850 °C. Electrical measurements of AlGaN/GaN MOS capacitors also showed that, although excessive oxidation treatment of AlGaN surfaces over around 700 °C has an adverse effect, interface passivation with the initial oxidation of the AlGaN surfaces at temperatures ranging from 400 to 500 °C was proven to be beneficial for fabricating high-quality AlGaN/GaN MOS gate stacks.

  8. Enhancement and character recognition of the erased colophon of a 15th-century Hebrew prayer book

    Science.gov (United States)

    Walvoord, Derek J.; Easton, Roger L., Jr.; Knox, Keith T.; Heimbueger, Matthew

    2005-01-01

    A handwritten codex often included an inscription that listed facts about its publication, such as the names of the scribe and patron, date of publication, the city where the book was copied, etc. These facts obviously provide essential information to a historian studying the provenance of the codex. Unfortunately, this page was sometimes erased after the sale of the book to a new owner, often by scraping off the original ink. The importance of recovering this information would be difficult to overstate. This paper reports on the methods of imaging, image enhancement, and character recognition that were applied to this page in a Hebrew prayer book copied in Florence in the 15th century.

  9. Inhibition of xanthine oxidase reduces oxidative stress and improves skeletal muscle function in response to electrically stimulated isometric contractions in aged mice

    Science.gov (United States)

    Ryan, Michael J.; Jackson, Janna R.; Hao, Yanlei; Leonard, Stephen S.; Alway, Stephen E.

    2012-01-01

    Oxidative stress is a putative factor responsible for reducing function and increasing apoptotic signaling in skeletal muscle with aging. This study examined the contribution and functional significance of the xanthine oxidase enzyme as a potential source of oxidant production in aged skeletal muscle during repetitive in situ electrically stimulated isometric contractions. Xanthine oxidase activity was inhibited in young adult and aged mice via a subcutaneously placed time release (2.5 mg/day) allopurinol pellet, 7 days prior to the start of in situ electrically stimulated isometric contractions. Gastrocnemius muscles were electrically activated with 20 maximal contractions for three consecutive days. Xanthine oxidase activity was 65% greater in the gastrocnemius muscle of aged mice compared to young mice. Xanthine oxidase activity also increased after in situ electrically stimulated isometric contractions in muscles from both young (33%) and aged (28%) mice, relative to contralateral non-contracted muscles. Allopurinol attenuated the exercise-induced increase in oxidative stress, but it did not affect the elevated basal levels of oxidative stress that was associated with aging. In addition, inhibition of xanthine oxidase activity decreased caspase 3 activity, but it had no effect on other markers of mitochondrial associated apoptosis. Our results show that compared to control conditions, suppression of xanthine oxidase activity by allopurinol reduced xanthine oxidase activity, H2O2 levels, lipid peroxidation and caspase-3 activity, prevented the in situ electrically stimulated isometric contraction-induced loss of glutathione, prevented the increase of catalase and copper-zinc superoxide dismutase activities, and increased maximal isometric force in the plantar flexor muscles of aged mice after repetitive electrically evoked contractions. PMID:21530649

  10. Electrical and optical properties of thin indium tin oxide films produced by pulsed laser ablation in oxygen or rare gas atmospheres

    DEFF Research Database (Denmark)

    Thestrup, B.; Schou, Jørgen; Nordskov, A.

    1999-01-01

    Films of indium tin oxide (ITO) have been produced in different background gases by pulsed laser deposition (PLD). The Films deposited in rare gas atmospheres on room temperature substrates were metallic, electrically conductive, but had poor transmission of visible light. For substrate temperatu......Films of indium tin oxide (ITO) have been produced in different background gases by pulsed laser deposition (PLD). The Films deposited in rare gas atmospheres on room temperature substrates were metallic, electrically conductive, but had poor transmission of visible light. For substrate...

  11. Tunable electronic, electrical and optical properties of graphene oxide sheets by ion irradiation

    Science.gov (United States)

    Jayalakshmi, G.; Saravanan, K.; Panigrahi, B. K.; Sundaravel, B.; Gupta, Mukul

    2018-05-01

    The tunable electronic, electrical and optical properties of graphene oxide (GO) sheets were investigated using a controlled reduction by 500 keV Ar+-ion irradiation. The carbon to oxygen ratio of the GO sheets upon the ion beam reduction has been estimated using resonant Rutherford backscattering spectrometry analyses and its effect on the electrical and optical properties of GO sheets has been studied using sheet resistance measurements and photoluminescence (PL) measurements. The restoration of sp 2-hybridized carbon atoms within the sp 3 matrix is found to be increases with increasing the Ar+-ion fluences as evident from Fourier transform infrared, and x-ray absorption near-edge structure measurements. The decrease in the number of disorder-induced local density of states (LDOSs) within the π-π* gap upon the reduction causes the shifting of PL emission from near infra-red to blue region and decreases the sheet resistance. The improved electrical and optical properties of GO sheets were correlated to the decrease in the number of LDOSs within the π-π* gap. Our experimental investigations suggest ion beam irradiation is one of an effective approaches to reduce GO to RGO and to tailor its electronic, electrical and optical properties.

  12. Potential of Reversible Solid Oxide Cells as Electricity Storage System

    Directory of Open Access Journals (Sweden)

    Paolo Di Giorgio

    2016-08-01

    Full Text Available Electrical energy storage (EES systems allow shifting the time of electric power generation from that of consumption, and they are expected to play a major role in future electric grids where the share of intermittent renewable energy systems (RES, and especially solar and wind power plants, is planned to increase. No commercially available technology complies with all the required specifications for an efficient and reliable EES system. Reversible solid oxide cells (ReSOC working in both fuel cell and electrolysis modes could be a cost effective and highly efficient EES, but are not yet ready for the market. In fact, using the system in fuel cell mode produces high temperature heat that can be recovered during electrolysis, when a heat source is necessary. Before ReSOCs can be used as EES systems, many problems have to be solved. This paper presents a new ReSOC concept, where the thermal energy produced during fuel cell mode is stored as sensible or latent heat, respectively, in a high density and high specific heat material and in a phase change material (PCM and used during electrolysis operation. The study of two different storage concepts is performed using a lumped parameters ReSOC stack model coupled with a suitable balance of plant. The optimal roundtrip efficiency calculated for both of the configurations studied is not far from 70% and results from a trade-off between the stack roundtrip efficiency and the energy consumed by the auxiliary power systems.

  13. Electrical and optical study of transparent V-based oxide semiconductors prepared by magnetron sputtering under different conditions

    Directory of Open Access Journals (Sweden)

    E. Prociow

    2011-04-01

    Full Text Available This work is focused on structural, optical and electrical behaviors of vanadium-based oxide thin films prepared by magnetron sputtering under different conditions. Thin films have been deposited on glass substrates from metallic vanadium target at low sputtering pressure. Different working gases: argon/oxygen mixture, and especially pure oxygen gas, have been applied. Results of X-ray diffraction together with optical transmission and temperature- dependent electrical resistivity measurements have been presented. Transmission coefficient, cut-off wavelength and the width of the optical band gap have been calculated from optical measurements. The d.c. resistivity values at room temperature and thermal activation energy have been obtained from electrical investigations. The influence of sputtering process conditions on optical and electrical properties has been discussed.

  14. Solid oxide fuel cells fueled with reducible oxides

    Science.gov (United States)

    Chuang, Steven S.; Fan, Liang Shih

    2018-01-09

    A direct-electrochemical-oxidation fuel cell for generating electrical energy includes a cathode provided with an electrochemical-reduction catalyst that promotes formation of oxygen ions from an oxygen-containing source at the cathode, a solid-state reduced metal, a solid-state anode provided with an electrochemical-oxidation catalyst that promotes direct electrochemical oxidation of the solid-state reduced metal in the presence of the oxygen ions to produce electrical energy, and an electrolyte disposed to transmit the oxygen ions from the cathode to the solid-state anode. A method of operating a solid oxide fuel cell includes providing a direct-electrochemical-oxidation fuel cell comprising a solid-state reduced metal, oxidizing the solid-state reduced metal in the presence of oxygen ions through direct-electrochemical-oxidation to obtain a solid-state reducible metal oxide, and reducing the solid-state reducible metal oxide to obtain the solid-state reduced metal.

  15. Electrical characterization of strontium titanate borosilicate glass ceramics system with bismuth oxide addition using impedance spectroscopy

    International Nuclear Information System (INIS)

    Thakur, O.P.; Kumar, Devendra; Parkash, Om; Pandey, Lakshman

    2003-01-01

    The ac electrical data, measured in the frequency range 0.1 kHz-1 MHz, were used to study the electrical response of strontium titanate borosilicate glass ceramic system with bismuth oxide addition. Complex plane plots from these electrical data for various glass ceramic samples reveal contributions from simultaneously operating polarization mechanisms to overall dielectric behavior. The complex modulus (M * ) representation of electrical data for various glass ceramic samples were found to be more informative. Equivalent circuit models, which represent the electrical behavior of glass ceramic samples, were determined using complex non-linear least square (CNLS) fitting. An attempt has been made to understand the dielectric behavior of various glass ceramics in terms of contributions arising from different polarization processes occurring at glassy matrix, crystalline phases, glass to crystal interface region and blocking electrodes. Glass ceramics containing SrTiO 3 and TiO 2 (rutile) phases show thermally stable dielectric behavior

  16. Raman scattering, electrical and optical properties of fluorine-doped tin oxide thin films with (200) and (301) preferred orientation

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Chang-Yeoul, E-mail: cykim15@kicet.re.kr [Nano-Convergence Intelligence Material Team, Korea Institute of Ceramic Eng. and Tech., Gasan-digtial-ro 10 Gil 77 Geumcheon-gu, 153-801 Seoul (Korea, Republic of); Riu, Doh-Hyung [Dept. of New Material Sci. and Eng., Seoul National University of Technology, Seoul (Korea, Republic of)

    2014-12-15

    (200) and (301) preferred oriented fluorine-doped tin oxide (FTO) thin films were fabricated by spray pyrolysis of ethanol-added and water-based FTO precursor solutions, respectively. (200) oriented FTO thin film from ethanol-added solution shows the lower electrical resistivity and visible light transmission than (301) preferred thin film from water-based solution. It is due to the higher carrier concentration and electron mobility in (200) oriented crystals, that is, the lower ionized impurity scattering. The higher electron concentration is related to the higher optical band gap energy, the lower visible light transmission, and the higher IR reflection. For (301) preferred FTO thin films from water-based solution, the lower carrier concentration and electron mobility make the higher electrical resistivity and visible light transmission. Raman scattering analysis shows that IR active modes prominent in (200) oriented FTO thin film are related with the lower electrical resistivity. - Highlights: • We coated fluorine-doped tin oxide thin films with preferred orientation of (200) and (301). • We examine changes in the level of electrical and optical properties with the orientation. • (200) preferred orientation showed lower electrical resistivity and optical transmittance. • (200) oriented thin films have higher electron concentrations that are related with IR active modes.

  17. Role of chemical functional groups on thermal and electrical properties of various graphene oxide derivatives: a comparative x-ray photoelectron spectroscopy analysis

    Science.gov (United States)

    Balaji Mohan, Velram; Jakisch, Lothar; Jayaraman, Krishnan; Bhattacharyya, Debes

    2018-03-01

    In recent years, graphene and its derivatives have become prominent subject matter due to their fascinating combination of properties and potential applications in a number application. While several fundamental studies have been progressed, there is a particular need to understand how different graphene derivatives are influenced in terms of their electrical and thermal conductivities by different functional groups they end up with through their manufacturing and functionalisation methods. This article addresses of the role of different functional groups present of different of reduced graphene oxides (rGO) concerning their electrical and thermal properties, and the results were compared with elemental analyses of functionalised reduced graphene oxide (frGO) and graphene. The results showed that electrical and thermal conductivities of the rGO samples, highly dependent on the presence of residual functional groups from oxidation, reduction and functionalisation processes. The increase in reduction of oxygen, hydroxyl, carboxylic, epoxide moieties and heterocyclic compounds increase the specific surface area of the samples through which the mean electron path has increased. This improved both electrical and thermal conductivities together in all the samples which were highly dependent on the efficiency of different reductant used in this study.

  18. Special metallurgy - the electrical butt-welding by flashing of sintered magnesium-magnesium oxide composites (1963)

    International Nuclear Information System (INIS)

    Charleux, J.

    1963-01-01

    Electrical resistance welding has become quite important since World War II because of the need of a high yield in aeronautical production. Progress has been due in particular to the improvements made in electronically controlled apparatus making possible the automatic control of welding. For the butt-welding of sections requiring either a high production rate or a high quality weld, the flash butt-welding system has been very much developed these last few years. The use of this welding method is of great importance in the field of the bonding of oxidisable metals such as magnesium or aluminium and its alloys, because the welded joint is free from oxides. This study consists of general considerations on the flash-welding process with regard to temperature distribution in the parts during welding, and to electrical phenomena connected with flashing. Besides this general or theoretical section, we have applied the welding process to the bonding of sintered magnesium, a magnesium-magnesium oxide composite, whose use as a structural element in nuclear reactors is considered. (author) [fr

  19. Effect of succinonitrile on electrical, structural, optical, and thermal properties of [poly(ethylene oxide)-succinonitrile]/LiI–I2 redox-couple solid polymer electrolyte

    International Nuclear Information System (INIS)

    Gupta, Ravindra Kumar; Rhee, Hee-Woo

    2012-01-01

    Effect of succinonitrile on electrical, structural, optical, and thermal properties of [poly(ethylene oxide)-succinonitrile]/LiI–I 2 redox-couple solid polymer electrolyte is reported for the first time. For the poly(ethylene oxide)-succinonitrile blend-based electrolyte electrical conductivity was noted as high as ∼3 × 10 −4 S cm −1 at 25 °C, which is an order of magnitude higher than that of pure poly(ethylene oxide)-based electrolyte. It also exhibited relatively better pseudo-activation energy (∼0.08 eV). X-ray diffractometry, polarized optical microscopy, and differential scanning calorimetry studies revealed that succinonitrile is helpful in reducing the poly(ethylene oxide) crystallinity due to its plasticizing property. FT-IR study showed significant modification of the poly(ethylene oxide) chain conformation due to the succinonitrile.

  20. Application of graphene oxide-poly (vinyl alcohol) polymer nanocomposite for memory devices

    Science.gov (United States)

    Kaushal, Jyoti; Kaur, Ravneet; Sharma, Jadab; Tripathi, S. K.

    2018-05-01

    Significant attention has been gained by polymer nanocomposites because of their possible demands in future electronic memory devices. In the present work, device based on Graphene Oxide (GO) and polyvinyl alcohol (PVA) has been made and examined for the memory device application. The prepared Graphene oxide (GO) and GO-PVA nanocomposite (NC) has been characterized by X-ray Diffraction (XRD). GO nanosheets show the diffraction peak at 2θ = 11.60° and the interlayer spacing of 0.761 nm. The XRD of GO-PVA NC shows the diffraction peak at 2θ =18.56°. The fabricated device shows bipolar switching behavior having ON/OFF current ratio ˜102. The Write-Read-Erase-Read (WRER) cycles test shows that the Al/GO-PVA/Ag device has good stability and repeatability.

  1. Formation of ZnO at zinc oxidation by near- and supercritical water under the constant electric field

    Science.gov (United States)

    Shishkin, A. V.; Sokol, M. Ya.; Shatrova, A. V.; Fedyaeva, O. N.; Vostrikov, A. A.

    2014-12-01

    The work has detected an influence of a constant electric field (up to E = 300 kV/m) on the structure of a nanocrystalline layer of zinc oxide, formed on the surface of a planar zinc anode in water under supercritical (673 K and 23 MPa) and near-critical (673 K and 17. 5 MPa) conditions. The effect of an increase of zinc oxidation rate with an increase in E is observed under supercritical conditions and is absent at near-critical ones. Increase in the field strength leads to the formation of a looser structure in the inner part of the zinc oxide layer.

  2. Maskless X-Ray Writing of Electrical Devices on a Superconducting Oxide with Nanometer Resolution and Online Process Monitoring.

    Science.gov (United States)

    Mino, Lorenzo; Bonino, Valentina; Agostino, Angelo; Prestipino, Carmelo; Borfecchia, Elisa; Lamberti, Carlo; Operti, Lorenza; Fretto, Matteo; De Leo, Natascia; Truccato, Marco

    2017-08-22

    X-ray nanofabrication has so far been usually limited to mask methods involving photoresist impression and subsequent etching. Herein we show that an innovative maskless X-ray nanopatterning approach allows writing electrical devices with nanometer feature size. In particular we fabricated a Josephson device on a Bi 2 Sr 2 CaCu 2 O 8+δ (Bi-2212) superconducting oxide micro-crystal by drawing two single lines of only 50 nm in width using a 17.4 keV synchrotron nano-beam. A precise control of the fabrication process was achieved by monitoring in situ the variations of the device electrical resistance during X-ray irradiation, thus finely tuning the irradiation time to drive the material into a non-superconducting state only in the irradiated regions, without significantly perturbing the crystal structure. Time-dependent finite element model simulations show that a possible microscopic origin of this effect can be related to the instantaneous temperature increase induced by the intense synchrotron picosecond X-ray pulses. These results prove that a conceptually new patterning method for oxide electrical devices, based on the local change of electrical properties, is actually possible with potential advantages in terms of heat dissipation, chemical contamination, miniaturization and high aspect ratio of the devices.

  3. Reversible switching of wetting properties and erasable patterning of polymer surfaces using plasma oxidation and thermal treatment

    Science.gov (United States)

    Rashid, Zeeshan; Atay, Ipek; Soydan, Seren; Yagci, M. Baris; Jonáš, Alexandr; Yilgor, Emel; Kiraz, Alper; Yilgor, Iskender

    2018-05-01

    Polymer surfaces reversibly switchable from superhydrophobic to superhydrophilic by exposure to oxygen plasma and subsequent thermal treatment are demonstrated. Two inherently different polymers, hydrophobic segmented polydimethylsiloxane-urea copolymer (TPSC) and hydrophilic poly(methyl methacrylate) (PMMA) are modified with fumed silica nanoparticles to prepare superhydrophobic surfaces with roughness on nanometer to micrometer scale. Smooth TPSC and PMMA surfaces are also used as control samples. Regardless of their chemical structure and surface topography, all surfaces display completely reversible wetting behavior changing from hydrophobic to hydrophilic and back for many cycles upon plasma oxidation followed by thermal annealing. Influence of plasma power, plasma exposure time, annealing temperature and annealing time on the wetting behavior of polymeric surfaces are investigated. Surface compositions, textures and topographies are characterized by X-ray photoelectron spectroscopy (XPS), scanning electron microscopy (SEM) and white light interferometry (WLI), before and after oxidation and thermal annealing. Wetting properties of the surfaces are determined by measuring their static, advancing and receding water contact angle. We conclude that the chemical structure and surface topography of the polymers play a relatively minor role in reversible wetting behavior, where the essential factors are surface oxidation and migration of polymer molecules to the surface upon thermal annealing. Reconfigurable water channels on polymer surfaces are produced by plasma treatment using a mask and thermal annealing cycles. Such patterned reconfigurable hydrophilic regions can find use in surface microfluidics and optofluidics applications.

  4. All-optical loadable and erasable memory cell design based on inversionless lasing and electromagnetically induced transparency effects

    International Nuclear Information System (INIS)

    Gholipour Verki, N; HajiBadali, A; Abbasian, K; Rostami, A

    2011-01-01

    A loadable and erasable all-optical memory cell is designed by using two coupled micro-ring resonators with electromagnetically induced transparency (EIT) and lasing without inversion (LWI). To read out stored data, an additional phase is introduced in the upper ring resonator due to EIT. To compensate the fibre loss, use is made of LWI. The EIT is induced by inserting Λ-type three level quantum dots in the right-hand half of the upper ring and LWI is implemented by inserted Y-type four level quantum dots in the left-hand half of both rings. This optical memory cell can operate at a low light power level corresponding to several photons.

  5. Rapid growth of zinc oxide nanobars in presence of electric field by physical vapor deposition

    Science.gov (United States)

    Jouya, Mehraban; Taromian, Fahime; Siami, Simin

    2017-12-01

    In this contribution, electric field has some effects to increase growth for specific time duration on zinc oxide (ZnO) nanobars. First, the zinc (Zn) thin film has been prepared by 235,000 V/m electric field assisted physical vapor deposition (PVD) at vacuum of 1.33 × 10-5 mbar. Second, strong electric field of 134,000 V/m has been used in ambient for growing ZnO nanobars in term of the time include 2.5 and 10 h. The performances of the ZnO nanostructure in absence and presence of electric field have been determined by scanning electron microscopy (SEM) and X-ray diffraction (XRD). The results of XRD analysis showed that ZnO has a hexagonal bars structure and a strongly preferred (101) orientation which is strongest than without applying electric field. SEM analysis revealed that physical vapored ZnO thin film in presence of electric field are densely packed with uniform morphological, thinner and denser in distribution. Electric field effect for ZnO growth in 2.5 h is better than it in the 2.5 h without electric field but by passing the time the media influence has good power almost as same as electric field. Through this electric field in PVD, the compact and uniform Zn film has been achieved which is less diameter than ordinary PVD method. Finally, we carry out a series of experiments to grow different-orientation ZnO nanobars with less than 100 nm in diameter, which are the time saving process in base of PVD ever reported. Therefore, the significant conclusion in usage electric field is reducing time of growth.

  6. Hybrid nanocomposite based on cellulose and tin oxide: growth, structure, tensile and electrical characteristics

    International Nuclear Information System (INIS)

    Mahadeva, Suresha K; Kim, Jaehwan

    2011-01-01

    A highly flexible nanocomposite was developed by coating a regenerated cellulose film with a thin layer of tin oxide (SnO 2 ) by liquid-phase deposition. Tin oxide was crystallized in solution and formed nanocrystal coatings on regenerated cellulose. The nanocrystalline layers did not exfoliate from cellulose. Transmission electron microscopy and energy dispersive x-ray spectroscopy suggest that SnO 2 was not only deposited over the cellulose surface, but also nucleated and grew inside the cellulose film. Current-voltage characteristics of the nanocomposite revealed that its electrical resistivity decreases with deposition time, with the lowest value obtained for 24 h of deposition. The cellulose-SnO 2 hybrid nanocomposite can be used for biodegradable and disposable chemical, humidity and biosensors.

  7. Prediction of crack density and electrical resistance changes in indium tin oxide/polymer thin films under tensile loading

    KAUST Repository

    Mora Cordova, Angel; Khan, Kamran; El Sayed, Tamer

    2014-01-01

    We present unified predictions for the crack onset strain, evolution of crack density, and changes in electrical resistance in indium tin oxide/polymer thin films under tensile loading. We propose a damage mechanics model to quantify and predict

  8. Influence of graphene oxide on mechanical, morphological, barrier, and electrical properties of polymer membranes

    Directory of Open Access Journals (Sweden)

    Ali Ammar

    2016-03-01

    Full Text Available This paper expresses a short review of research on the effects of graphene oxide (GO as a nanocomposite element on polymer morphology and resulting property modifications including mechanical, barrier, and electrical conductivity. The effects on mechanical enhancement related to stress measurements in particular are a focus of this review. To first order, varying levels of aggregation of GO in different polymer matrices as a result of their weak inter-particle attractive interactions mainly affect the nanocomposite mechanical properties. The near surface dispersion of GO in polymer/GO nanocomposites can be investigated by studying the surface morphology of these nanocomposites using scanning probe microscopy such as atomic force microscope (AFM and scanning electron microscope (SEM. In the bulk, GO dispersion can be studied by wide-angle X-ray scattering (WAXD by analyzing the diffraction peaks corresponding to the undispersed GO fraction in the polymer matrix. In terms of an application, we review how the hydrophilicity of graphene oxide and its hydrogen bonding potential can enhance water flux of these nanocomposite materials in membrane applications. Likewise, the electrical conductivity of polymer films and bulk polymers can be advantageously enhanced via the percolative dispersion of GO nanoparticles, but this typically requires some additional chemical treatment of the GO nanoparticles to transform it to reduced GO.

  9. Analysis of electrical and microstructural characteristics of a ZnO-based varistor doped with rare earth oxide

    International Nuclear Information System (INIS)

    Andrade, J.M. de; Dias, R.; Furtado, J.G. de M.; Assuncao, F.C.R.

    2010-01-01

    Varistor is a semiconductor device, used in the protection of electrical systems, characterized to have a high no-linear electric resistance. Its properties are directly dependents of its chemical composition and microstructural characteristics. In this work were analyzed microstructural and electrical characteristics of a ZnO-based varistor doped with rare earth oxide, with chemical composition (mol%) 98,5.ZnO - 0,3.Pr 6 O 11 - 0,2.Dy 2 O 3 - 0,9.Co 2 O 3 - 0,1.Cr 2 O 3 . X-ray diffraction for phase characterization, scanning electron microscopy and energy dispersive X-ray spectroscopy were used for microstructural analysis. Measurement of average grain size and electrical and dielectric characteristics complete the characterization. The results show the formation of biphasic microstructure and with high densification, presenting relevant varistors characteristics but that would need improvements.(author)

  10. A comparison of myogenic motor evoked responses to electrical and magnetic transcranial stimulation during nitrous oxide/opioid anesthesia

    NARCIS (Netherlands)

    Ubags, L. H.; Kalkman, C. J.; Been, H. D.; Koelman, J. H.; Ongerboer de Visser, B. W.

    1999-01-01

    Transcranial motor evoked potentials (tc-MEPs) are used to monitor spinal cord integrity intraoperatively. We compared myogenic motor evoked responses with electrical and magnetic transcranial stimuli during nitrous oxide/opioid anesthesia. In 11 patients undergoing spinal surgery, anesthesia was

  11. Modeling and experimental performance of an intermediate temperature reversible solid oxide cell for high-efficiency, distributed-scale electrical energy storage

    Science.gov (United States)

    Wendel, Christopher H.; Gao, Zhan; Barnett, Scott A.; Braun, Robert J.

    2015-06-01

    Electrical energy storage is expected to be a critical component of the future world energy system, performing load-leveling operations to enable increased penetration of renewable and distributed generation. Reversible solid oxide cells, operating sequentially between power-producing fuel cell mode and fuel-producing electrolysis mode, have the capability to provide highly efficient, scalable electricity storage. However, challenges ranging from cell performance and durability to system integration must be addressed before widespread adoption. One central challenge of the system design is establishing effective thermal management in the two distinct operating modes. This work leverages an operating strategy to use carbonaceous reactant species and operate at intermediate stack temperature (650 °C) to promote exothermic fuel-synthesis reactions that thermally self-sustain the electrolysis process. We present performance of a doped lanthanum-gallate (LSGM) electrolyte solid oxide cell that shows high efficiency in both operating modes at 650 °C. A physically based electrochemical model is calibrated to represent the cell performance and used to simulate roundtrip operation for conditions unique to these reversible systems. Design decisions related to system operation are evaluated using the cell model including current density, fuel and oxidant reactant compositions, and flow configuration. The analysis reveals tradeoffs between electrical efficiency, thermal management, energy density, and durability.

  12. Structural, optical and electrical characteristics of nickel oxide thin films synthesised through chemical processing method

    Science.gov (United States)

    Akinkuade, Shadrach; Mwankemwa, Benanrd; Nel, Jacqueline; Meyer, Walter

    2018-04-01

    A simple and cheap chemical deposition method was used to produce a nickel oxide (NiO) thin film on glass substrates from a solution that contained Ni2+ and monoethanolamine. Thermal treatment of the film at temperatures above 350 °C for 1 h caused decomposition of the nickel hydroxide into nickel oxide. Structural, optical and electrical properties of the film were studied using X-ray diffraction (XRD), spectrophotometry, current-voltage measurements and scanning electron microscopy (SEM). The film was found to be polycrystalline with interplanar spacing of 0.241 nm, 0.208 nm and 0.148 nm for (111), (200) and (220) planes respectively, the lattice constant a was found to be 0.417 nm. The film had a porous surface morphology, formed from a network of nanowalls of average thickness of 66.67 nm and 52.00 nm for as-deposited and annealed films respectively. Transmittance of visible light by the as-deposited film was higher and the absorption edge of the film blue-shifted after annealing. The optical band gap of the annealed film was 3.8 eV. Electrical resistivity of the film was 378 Ωm.

  13. Polypyrrole–titanium(IV) doped iron(III) oxide nanocomposites: Synthesis, characterization with tunable electrical and electrochemical properties

    International Nuclear Information System (INIS)

    Nandi, Debabrata; Ghosh, Arup Kumar; Gupta, Kaushik; De, Amitabha; Sen, Pintu; Duttachowdhury, Ankan; Ghosh, Uday Chand

    2012-01-01

    Highlights: ► Synthesis and characterization of polymer nanocomposite based on titanium doped iron(III) oxide. ► Electrical conductivity increased 100 times in composite with respect to polymer. ► Electrochemical capacitance of polymer composites increased with nanooxide content. ► Thermal stability of the polymer enhanced with nano oxide content. -- Abstract: Titanium(IV)-doped synthetic nanostructured iron(III) oxide (NITO) and polypyrrole (PPy) nanocomposites was fabricated by in situ polymerization using FeCl 3 as initiator. The polymer nanocomposites (PNCs) and pure NITO were characterized by X-ray diffraction, Föurier transform infrared spectroscopy, scanning electron microscopy, electron dispersive X-ray spectroscopy, transmission electron microscopy, etc. Thermo gravimetric and differential thermal analyses showed the enhancement of thermal stability of PNCs than the pure polymer. Electrical conductivity of the PNCs had increased significantly from 0.793 × 10 −2 S/cm to 0.450 S/cm with respect to the PPy, and that had been explained by 3-dimensional variable range hopping (VRH) conduction mechanisms. In addition, the specific capacitance of PNCs had increased from 147 F/g to 176 F/g with increasing NITO content than that of pure NITO (26 F/g), presumably due to the growing of mesoporous structure with increasing NITO content in PNCs which reduced the charge transfer resistance significantly.

  14. Effects of electrical discharge surface modification of superalloy Haynes 230 with aluminum and molybdenum on oxidation behavior

    International Nuclear Information System (INIS)

    Bai, C.-Y.

    2007-01-01

    The effects of the electrical discharge alloying (EDA) process on improving the high temperature oxidation resistance of the Ni-based superalloy Haynes 230 have been investigated. The 85 at.% Al and 15 at.% Mo composite electrode provided the surface alloying materials. An Al-rich layer is produced on the surface of the EDA specimen alloyed with positive electrode polarity, whereas, many discontinuous piled layers are attached to the surface of the EDA superalloy when negative electrode polarity is selected. The oxidation resistance of the specimen alloyed with positive electrode polarity is better than that of the unalloyed superalloy, and the effective temperature of oxidation resistance of the alloyed layer can be achieved to 1100 o C. Conversely, the oxidation resistance of the other EDA specimen alloyed with negative electrode polarity is even worse than that of the unalloyed superalloy

  15. Investigation of structural and electrical properties on substrate material for high frequency metal-oxide-semiconductor (MOS) devices

    Science.gov (United States)

    Kumar, M.; Yang, Sung-Hyun; Janardhan Reddy, K.; JagadeeshChandra, S. V.

    2017-04-01

    Hafnium oxide (HfO2) thin films were grown on cleaned P-type Ge and Si substrates by using atomic layer deposition technique (ALD) with thickness of 8 nm. The composition analysis of as-deposited and annealed HfO2 films was characterized by XPS, further electrical measurements; we fabricated the metal-oxide-semiconductor (MOS) devices with Pt electrode. Post deposition annealing in O2 ambient at 500 °C for 30 min was carried out on both Ge and Si devices. Capacitance-voltage (C-V) and conductance-voltage (G-V) curves measured at 1 MHz. The Ge MOS devices showed improved interfacial and electrical properties, high dielectric constant (~19), smaller EOT value (0.7 nm), and smaller D it value as Si MOS devices. The C-V curves shown significantly high accumulation capacitance values from Ge devices, relatively when compare with the Si MOS devices before and after annealing. It could be due to the presence of very thin interfacial layer at HfO2/Ge stacks than HfO2/Si stacks conformed by the HRTEM images. Besides, from current-voltage (I-V) curves of the Ge devices exhibited similar leakage current as Si devices. Therefore, Ge might be a reliable substrate material for structural, electrical and high frequency applications.

  16. Microstructure and electrical-optical properties of cesium tungsten oxides synthesized by solvothermal reaction followed by ammonia annealing

    International Nuclear Information System (INIS)

    Liu Jingxiao; Ando, Yoshihiko; Dong Xiaoli; Shi Fei; Yin Shu; Adachi, Kenji; Chonan, Takeshi; Tanaka, Akikazu; Sato, Tsugio

    2010-01-01

    Cesium tungsten oxides (Cs x WO 3 ) were synthesized by solvothermal reactions using ethanol and 57.1 vol% ethanol aqueous solution at 200 o C for 12 h, and the effects of post annealing in ammonia atmosphere on the microstructure and electrical-optical properties were investigated. Agglomerated particles consisting of disk-like nanoparticles and nanorods of Cs x WO 3 were formed in the pure ethanol and ethanol aqueous solutions, respectively. The samples retained the original morphology and crystallinity after annealing in ammonia atmosphere up to 500 o C, while a small amount of nitrogen ion were incorporated in the lattice. The as-prepared Cs x WO 3 sample showed excellent near infrared (NIR) light shielding ability as well as high transparency in the visible light region. The electrical resistivity of the pressed pellets of the powders prepared in pure ethanol and 57.1 vol% ethanol aqueous solution greatly decreased after ammonia annealing at 500 o C, i.e., from 734 to 31.5 and 231 to 3.58 Ω cm, respectively. - Graphical abstract: Cesium tungsten oxides (Cs x WO 3 ) with different morphology were synthesized by solvothermal reaction, and the effects of post-ammonia annealing on the microstructure and electrical-optical properties were investigated.

  17. Electrical properties of tin-doped zinc oxide nanostructures doped at different dopant concentrations

    International Nuclear Information System (INIS)

    Nasir, M. F.; Zainol, M. N.; Hannas, M.; Mamat, M. H.; Rusop, Mohamad; Rahman, S. A.

    2016-01-01

    This project has been focused on the electrical and optical properties respectively on the effect of Tin doped zinc oxide (ZnO) thin films at different dopant concentrations. These thin films were doped with different Sn dopant concentrations at 1 at%, 2 at%, 3 at%, 4 at% and 5 at% was selected as the parameter to optimize the thin films quality while the annealing temperature is fixed 500 °C. Sn doped ZnO solutions were deposited onto the glass substrates using sol-gel spin coating method. This project was involved with three phases, which are thin films preparation, deposition and characterization. The thin films were characterized using Current Voltage (I-V) measurement and ultraviolet-visible-near-infrared (UV-vis-NIR) spectrophotometer (Perkin Elmer Lambda 750) for electrical properties and optical properties. The electrical properties show that the resistivity is the lowest at 4 at% Sn doping concentration with the value 3.08 × 10"3 Ωcm"−"1. The absorption coefficient spectrum obtained shows all films exhibit very low absorption in the visible (400-800 nm) and near infrared (NIR) (>800 nm) range but exhibit high absorption in the UV range.

  18. Electrical properties of tin-doped zinc oxide nanostructures doped at different dopant concentrations

    Energy Technology Data Exchange (ETDEWEB)

    Nasir, M. F., E-mail: babaibaik2002@yahoo.com; Zainol, M. N., E-mail: nizarzainol@yahoo.com; Hannas, M., E-mail: mhannas@gmail.com [NANO-ElecTronic Centre (NET), Faculty of Electrical Engineering, Universiti Teknologi MARA (UiTM), 40450 Shah Alam, Selangor (Malaysia); Mamat, M. H., E-mail: mhmamat@salam.uitm.edu.my; Rusop, Mohamad, E-mail: rusop@salam.uitm.edu.my [NANO-ElecTronic Centre (NET), Faculty of Electrical Engineering, Universiti Teknologi MARA (UiTM), 40450 Shah Alam, Selangor (Malaysia); NANO-SciTech Centre (NST), Institute of Science (IOS), Universiti Teknologi MARA - UiTM, 40450 Shah Alam, Selangor (Malaysia); Rahman, S. A., E-mail: saadah@um.edu.my [NANO-ElecTronic Centre (NET), Faculty of Electrical Engineering, Universiti Teknologi MARA (UiTM), 40450 Shah Alam, Selangor (Malaysia); Low Dimensional Materials Research Centre, Physics Department, Faculty of Science, University of Malaya, 50603 Kuala Lumpur (Malaysia)

    2016-07-06

    This project has been focused on the electrical and optical properties respectively on the effect of Tin doped zinc oxide (ZnO) thin films at different dopant concentrations. These thin films were doped with different Sn dopant concentrations at 1 at%, 2 at%, 3 at%, 4 at% and 5 at% was selected as the parameter to optimize the thin films quality while the annealing temperature is fixed 500 °C. Sn doped ZnO solutions were deposited onto the glass substrates using sol-gel spin coating method. This project was involved with three phases, which are thin films preparation, deposition and characterization. The thin films were characterized using Current Voltage (I-V) measurement and ultraviolet-visible-near-infrared (UV-vis-NIR) spectrophotometer (Perkin Elmer Lambda 750) for electrical properties and optical properties. The electrical properties show that the resistivity is the lowest at 4 at% Sn doping concentration with the value 3.08 × 10{sup 3} Ωcm{sup −1}. The absorption coefficient spectrum obtained shows all films exhibit very low absorption in the visible (400-800 nm) and near infrared (NIR) (>800 nm) range but exhibit high absorption in the UV range.

  19. Structural, optical and electrical properties of indium tin oxide thin films prepared by spray pyrolysis

    Energy Technology Data Exchange (ETDEWEB)

    Benamar, E.; Rami, M.; Messaoudi, C.; Sayah, D.; Ennaoui, A. [Deptartmento de Physique, Laboratoire de Physique des Materiaux, Faculte des Sciences, BP 1014, Ave Inb Battouta, Rabat (Morocco)

    1998-11-27

    Spray pyrolysis process has been used to deposit highly transparent and conducting films of tin-doped indium oxide onto glass substrates. The electrical, structural and optical properties have been investigated as a function of various deposition parameters namely dopant concentrations, temperature and nature of substrate. The morphology of the surface as a function of the substrate temperature has been studied using atomic force microscopy. XRD has shown that deposited films are polycrystalline without second phases and have a preferred orientation (4 0 0). Indium tin oxide layers with low resistivity values around 4x10{sup -5} {Omega} cm and transmission coefficients in the visible and near-infrared range of about 85-90% have been easily obtained

  20. Electric field cycling behavior of ferroelectric hafnium oxide.

    Science.gov (United States)

    Schenk, Tony; Schroeder, Uwe; Pešić, Milan; Popovici, Mihaela; Pershin, Yuriy V; Mikolajick, Thomas

    2014-11-26

    HfO2 based ferroelectrics are lead-free, simple binary oxides with nonperovskite structure and low permittivity. They just recently started attracting attention of theoretical groups in the fields of ferroelectric memories and electrostatic supercapacitors. A modified approach of harmonic analysis is introduced for temperature-dependent studies of the field cycling behavior and the underlying defect mechanisms. Activation energies for wake-up and fatigue are extracted. Notably, all values are about 100 meV, which is 1 order of magnitude lower than for conventional ferroelectrics like lead zirconate titanate (PZT). This difference is mainly atttributed to the one to two orders of magnitude higher electric fields used for cycling and to the different surface to volume ratios between the 10 nm thin films in this study and the bulk samples of former measurements or simulations. Moreover, a new, analog-like split-up effect of switching peaks by field cycling is discovered and is explained by a network model based on memcapacitive behavior as a result of defect redistribution.

  1. Electrical and optical properties of indium tin oxide/epoxy composite film

    International Nuclear Information System (INIS)

    Guo Xia; Guo Chun-Wei; Chen Yu; Su Zhi-Ping

    2014-01-01

    The electrical and optical properties of the indium tin oxide (ITO)/epoxy composite exhibit dramatic variations as functions of the ITO composition and ITO particle size. Sharp increases in the conductivity in the vicinity of a critical volume fraction have been found within the framework of percolation theory. A conductive and insulating transition model is extracted by the ITO particle network in the SEM image, and verified by the resistivity dependence on the temperature. The dependence of the optical transmittance on the particle size was studied. Further decreasing the ITO particle size could further improve the percolation threshold and light transparency of the composite film. (condensed matter: structural, mechanical, and thermal properties)

  2. Optical modeling and electrical properties of cadmium oxide nanofilms: Developing a meta–heuristic calculation process model

    Energy Technology Data Exchange (ETDEWEB)

    Abdolahzadeh Ziabari, Ali, E-mail: ali.abd.ziabari@gmail.com [Nano Research Lab, Lahijan Branch, Islamic Azad University, P.O. Box 1616, Lahijan (Iran, Islamic Republic of); Refahi Sheikhani, A. H. [Department of Applied Mathematics, Lahijan Branch, Islamic Azad University, Lahijan (Iran, Islamic Republic of); Nezafat, Reza Vatani [Department of Civil Engineering, Faculty of Technology, University of Guilan, Rasht (Iran, Islamic Republic of); Haghighidoust, Kasra Monsef [Department of Mechanical Engineering, Faculty of Technology, University of Guilan, Rasht (Iran, Islamic Republic of)

    2015-04-07

    Cadmium oxide thin films were deposited onto glass substrates by sol–gel dip-coating method and annealed in air. The normal incidence transmittance of the films was measured by a spectrophotometer. D.C electrical parameters such as carrier concentration and mobility were analyzed by Hall Effect measurements. A combination of Forouhi–Bloomer and standard Drude model was used to simulate the optical constants and thicknesses of the films from transmittance data. The transmittance spectra of the films in the visible domain of wavelengths were successfully fitted by using the result of a hybrid particle swarm optimization method and genetic algorithm. The simulated transmittance is in good accordance with the measured spectrum in the whole measurement wavelength range. The electrical parameters obtained from the optical simulation are well consistent with those measured electrically by Hall Effect measurements.

  3. Modulation of the electrical properties in amorphous indium-gallium zinc-oxide semiconductor films using hydrogen incorporation

    Science.gov (United States)

    Song, Aeran; Park, Hyun-Woo; Chung, Kwun-Bum; Rim, You Seung; Son, Kyoung Seok; Lim, Jun Hyung; Chu, Hye Yong

    2017-12-01

    The electrical properties of amorphous-indium-gallium-zinc-oxide (a-IGZO) thin films were investigated after thermal annealing and plasma treatment under different gas conditions. The electrical resistivity of a-IGZO thin films post-treated in a hydrogen ambient were lower than those without treatment and those annealed in air, regardless of the methods used for both thermal annealing and plasma treatment. The electrical properties can be explained by the quantity of hydrogen incorporated into the samples and the changes in the electronic structure in terms of the chemical bonding states, the distribution of the near-conduction-band unoccupied states, and the band alignment. As a result, the carrier concentrations of the hydrogen treated a-IGZO thin films increased, while the mobility decreased, due to the increase in the oxygen vacancies from the occurrence of unoccupied states in both shallow and deep levels.

  4. AC electric field assisted orientational photorefractive effect in C60-doped nematic liquid crystal

    International Nuclear Information System (INIS)

    Sun Xiudong; Pei Yanbo; Yao Fengfeng; Zhang Jianlong; Hou Chunfeng

    2007-01-01

    Photorefractive gratings were produced in a C 60 -doped nematic liquid crystal cell under the application of two coherent beams and a nonbiased sinusoidal ac electric field. The beam coupling and diffraction of the ac electric field assisted gratings were studied systematically. A stable asymmetric energy transference was obtained. Diffraction was observed when the angle (between the normal of the cell and the bisector of the writing beams) was 0 0 , and the dependence of diffraction efficiency on the peak-to-peak value of the ac voltage was similar to that at an incidence angle of 45 0 , suggesting that the role of the ac field was to facilitate the charge separation, and the space-charge field (SCF) originated predominantly from the diffusion of the ac electric field assisted photo-induced carriers under the application of nonuniform illumination and an applied ac field. The grating was produced by director reorientation induced by the cooperation of the SCF and the applied ac electric field. A self-erasing phenomenon was observed in this cell. An explanation in terms of the movement of two kinds of carriers with opposite signs was proposed

  5. Electrical transport properties of nanoplates shaped tungsten oxide embedded poly(vinyl-alcohol) film

    Science.gov (United States)

    Das, Amit Kumar; Chatterjee, Piyali; Meikap, Ajit Kumar

    2018-04-01

    Tungsten oxide (WO3) nanoplates have been synthesized via hydrothermal method. The average crystallite size of the nanoplates is 28.9 ± 0.5 nm. The direct and indirect band gap of WO3 is observed. The AC conductivity of PVA-WO3 composite film has been observed and carrier transport mechanism follows correlated barrier hopping model. The maximum barrier height of the composite film is 0.1 eV. The electric modulus reflects the non-Debye type behaviour of relaxation time which is simulated by Kohlrausch-Willims-Watts (KWW) function.

  6. Comparative analysis of oxide phase formation and its effects on electrical properties of SiO{sub 2}/InSb metal-oxide-semiconductor structures

    Energy Technology Data Exchange (ETDEWEB)

    Lee, Jaeyel [Department of Materials Science and Engineering, Seoul National University, Seoul 151-744 (Korea, Republic of); Park, Sehun [Department of Materials Science and Engineering, Seoul National University, Seoul 151-744 (Korea, Republic of); WCU Hybrid Materials Program, Department of Materials Science and Engineering, Seoul National University, Seoul 151-744 (Korea, Republic of); Kim, Jungsub; Yang, Changjae; Kim, Sujin; Seok, Chulkyun [Department of Materials Science and Engineering, Seoul National University, Seoul 151-744 (Korea, Republic of); Park, Jinsub [Department of Electronic Engineering, Hanyang University, Seoul 133-791 (Korea, Republic of); Yoon, Euijoon, E-mail: eyoon@snu.ac.kr [Department of Materials Science and Engineering, Seoul National University, Seoul 151-744 (Korea, Republic of); WCU Hybrid Materials Program, Department of Materials Science and Engineering, Seoul National University, Seoul 151-744 (Korea, Republic of); Department of Nano Science and Technology, Graduate School of Convergence Science and Technology, Seoul National University, Suwon 443-270 (Korea, Republic of); Energy Semiconductor Research Center, Advanced Institutes of Convergence Technology, Seoul National University, Suwon 443-270 (Korea, Republic of)

    2012-06-01

    We report on the changes in the interfacial phases between SiO{sub 2} and InSb caused by various deposition temperatures and heat treatments. X-ray photoelectron spectroscopy (XPS) and Raman spectroscopy were used to evaluate the relative amount of each phase present at the interface. The effect of interfacial phases on the electrical properties of SiO{sub 2}/InSb metal-oxide-semiconductor (MOS) structures was investigated by capacitance-voltage (C-V) measurements. The amount of both In and Sb oxides increased with the deposition temperature. The amount of interfacial In oxide was larger for all samples, regardless of the deposition and annealing temperatures and times. In particular, the annealed samples contained less than half the amount of Sb oxide compared with the as-deposited samples, indicating a strong interfacial reaction between Sb oxide and the InSb substrate during annealing. The interface trap density sharply increased for deposition temperatures above 240 Degree-Sign C. The C-V measurements and Raman spectroscopy indicated that elemental Sb accumulation due to the interfacial reaction of Sb oxide with InSb substrate was responsible for the increased interfacial trap densities in these SiO{sub 2}/InSb MOS structures. - Highlights: Black-Right-Pointing-Pointer We report the quantitative analysis of interfacial oxides at the SiO{sub 2}/InSb interface. Black-Right-Pointing-Pointer Interfacial oxides were measured quantitatively by X-ray Photoelectron Spectroscopy. Black-Right-Pointing-Pointer As-grown and annealed samples showed different compositions of oxide phases. Black-Right-Pointing-Pointer Considerable reduction of antimony oxide phases was observed during annealing. Black-Right-Pointing-Pointer Interface trap densities at the SiO{sub 2}/InSb interface were calculated.

  7. Fossil-based comparative analyses reveal ancient marine ancestry erased by extinction in ray-finned fishes.

    Science.gov (United States)

    Betancur-R, Ricardo; Ortí, Guillermo; Pyron, Robert Alexander

    2015-05-01

    The marine-freshwater boundary is a major biodiversity gradient and few groups have colonised both systems successfully. Fishes have transitioned between habitats repeatedly, diversifying in rivers, lakes and oceans over evolutionary time. However, their history of habitat colonisation and diversification is unclear based on available fossil and phylogenetic data. We estimate ancestral habitats and diversification and transition rates using a large-scale phylogeny of extant fish taxa and one containing a massive number of extinct species. Extant-only phylogenetic analyses indicate freshwater ancestry, but inclusion of fossils reveal strong evidence of marine ancestry in lineages now restricted to freshwaters. Diversification and colonisation dynamics vary asymmetrically between habitats, as marine lineages colonise and flourish in rivers more frequently than the reverse. Our study highlights the importance of including fossils in comparative analyses, showing that freshwaters have played a role as refuges for ancient fish lineages, a signal erased by extinction in extant-only phylogenies. © 2015 John Wiley & Sons Ltd/CNRS.

  8. Oxidant enhancement in martian dust devils and storms: storm electric fields and electron dissociative attachment.

    Science.gov (United States)

    Delory, Gregory T; Farrell, William M; Atreya, Sushil K; Renno, Nilton O; Wong, Ah-San; Cummer, Steven A; Sentman, Davis D; Marshall, John R; Rafkin, Scot C R; Catling, David C

    2006-06-01

    Laboratory studies, numerical simulations, and desert field tests indicate that aeolian dust transport can generate atmospheric electricity via contact electrification or "triboelectricity." In convective structures such as dust devils and dust storms, grain stratification leads to macroscopic charge separations and gives rise to an overall electric dipole moment in the aeolian feature, similar in nature to the dipolar electric field generated in terrestrial thunderstorms. Previous numerical simulations indicate that these storm electric fields on Mars can approach the ambient breakdown field strength of approximately 25 kV/m. In terrestrial dust phenomena, potentials ranging from approximately 20 to 160 kV/m have been directly measured. The large electrostatic fields predicted in martian dust devils and storms can energize electrons in the low pressure martian atmosphere to values exceeding the electron dissociative attachment energy of both CO2 and H2O, which results in the formation of the new chemical products CO/O- and OH/H-, respectively. Using a collisional plasma physics model, we present calculations of the CO/O- and OH/H- reaction and production rates. We demonstrate that these rates vary geometrically with the ambient electric field, with substantial production of dissociative products when fields approach the breakdown value of approximately 25 kV/m. The dissociation of H2O into OH/H- provides a key ingredient for the generation of oxidants; thus electrically charged dust may significantly impact the habitability of Mars.

  9. Role of Defects and Adsorbed Water Film in Influencing the Electrical, Optical and Catalytic Properties of Transition Metal Oxides

    Science.gov (United States)

    Wang, Qi

    Transition metal oxides (TMOs) constitute a large group of materials that exhibit a wide range of optical, electrical, electrochemical, dielectric and catalytic properties, and thus making them highly regarded as promising materials for a variety of applications in next generation electronic, optoelectronic, catalytic, photonic, energy storage and energy conversion devices. Some of the unique properties of TMOs are their strong electron-electron correlations that exists between the valence electrons of narrow d- or f-shells and their ability to exist in variety of oxidation states. This gives TMOs an enormous range of fascinating electronic and other physical properties. Many of these remarkable properties of TMOs arises from the complex surface charge transfer processes at the oxide surface/electrochemical redox species interface and non-stoichiometry due to the presence of lattice vacancies that may cause significant perturbation to the electronic structure of the material. Stoichiometry, oxidation state of the metal center and lattice vacancy defects all play important roles in affecting the physical properties, electronic structures, device behavior and other functional properties of TMOs. However, the underlying relationships between them is not clearly known. For instance, the exchange of electrons between adsorbates and defects can lead to the passivation of existing defect states or formation of new defects, both of which affect defect equilibria, and consequently, functional properties. In depth understanding of the role of lattice defects on the electrical, catalytic and optical properties of TMOs is central to further expansion of the technological applications of TMO based devices. The focus of this work is to elucidate the interactions of vacancy defects with various electrochemical adsorbates in TMOs. The ability to directly probe the interactions of vacancy defects with gas and liquid phase species under in-operando conditions is highly desirable to

  10. Carbothermic reduction of electric arc furnace dust and calcination of waelz oxide by semi-pilot scale rotary furnace

    Directory of Open Access Journals (Sweden)

    Morcali M.H.

    2012-01-01

    Full Text Available The paper gives a common outline about the known recycling techniques from electric arc furnace dusts and describes an investigation of a pyrometallurgical process for the recovery of zinc and iron from electric arc furnace dusts (EAFD. In the waelz process, the reduction of zinc and iron from the waste oxides using solid carbon (lignite coal was studied. In the reduction experiments; temperature, time and charge type (powder and pellet were investigated in detail. It was demonstrated that zinc and iron recovery (% increases with increasing temperature as well as time. Pelletizing was found to be a better method than using the powder as received for the zinc recovery and iron conversion (. In the calcination (roasting process, crude zinc oxide, which evaporated from non-ferric metals were collected as condensed product (crude waelz oxide, was heated in air atmosphere. Lead, cadmium as well as chlorine and other impurities were successfully removed from crude waelz oxide by this method. In the calcination experiments; temperature and time are investigated in detail. It was demonstrated that zinc purification (% increases with increasing temperature. The highest zinc refining (% was obtained at 1200°C for 120 minutes. A kinetic study was also undertaken to determine the activation energy of the process. Activation energies were 242.77 kJ/mol for the zinc recovery with powder forms, 261.99 kJ/mol for the zinc recovery with pellet forms respectively. It was found that, initially, the reaction was chemically controlled.

  11. Strain and Defect Engineering for Tailored Electrical Properties in Perovskite Oxide Thin Films and Superlattices

    Science.gov (United States)

    Hsing, Greg Hsiang-Chun

    Functional complex-oxides display a wide spectrum of physical properties, including ferromagnetism, piezoelectricity, ferroelectricity, photocatalytic and metal-insulating transition (MIT) behavior. Within this family, oxides with a perovskite structure have been widely studied, especially in the form of thin films and superlattices (heterostructures), which are strategically and industrially important because they offer a wide range of opportunities for electronic, piezoelectric and sensor applications. The first part of my thesis focuses on understanding and tuning of the built-in electric field found in PbTiO3/SrTiO3 (PTO/STO) ferroelectric superlattices and other ferroelectric films. The artificial layering in ferroelectric superlattices is a potential source of polarization asymmetry, where one polarization state is preferred over another. One manifestation of this asymmetry is a built-in electric field associated with shifted polarization hysteresis. Using off-axis RF-magnetron sputtering, we prepared several compositions of PTO/STO superlattice thin films; and for comparison PbTiO3/SrRuO 3 (PTO/SRO) superlattices, which have an additional intrinsic compositional asymmetry at the interface. Both theoretical modeling and experiments indicate that the layer-by-layer superlattice structure aligns the Pb-O vacancy defect dipoles in the c direction which contributes significantly to the built-in electric field; however the preferred polarization direction is different between the PTO/STO and PTO/SRO interface. By designing a hybrid superlattice that combines PTO/STO and PTO/SRO superlattices, we show the built-in electric field can be tuned to zero by changing the composition of the combo-superlattice. The second part of my thesis focuses on the epitaxial growth of SrCrO 3 (SCO) films. The inconsistent reports regarding its electrical and magnetic properties through the years stem from the compositionally and structurally ill-defined polycrystalline samples, but

  12. Enhancement of electricity production by graphene oxide in soil microbial fuel cells and plant microbial fuel cells

    Directory of Open Access Journals (Sweden)

    Yuko eGoto

    2015-04-01

    Full Text Available The effects of graphene oxide (GO on electricity generation in soil microbial fuel cells (SMFCs and plant microbial fuel cell (PMFCs were investigated. GO at concentrations ranging from 0 to 1.9 g•kg-1 was added to soil and reduced for 10 days under anaerobic incubation. All SMFCs (GO-SMFCs utilizing the soils incubated with GO produced electricity at a greater rate and in higher quantities than the SMFCs which did not contain GO. In fed-batch operations, the overall average electricity generation in GO-SMFCs containing 1.0 g•kg-1 of GO was 40 ± 19 mW•m-2, which was significantly higher than the value of 6.6 ± 8.9 mW•m-2 generated from GO-free SMFCs (p -2 of electricity after 27 days of operation. Collectively, this study demonstrates that GO added to soil can be microbially reduced in soil, and facilitates electron transfer to the anode in both SMFCs and PMFCs.

  13. Studies on synthesis of reduced graphene oxide (RGO) via green route and its electrical property

    Energy Technology Data Exchange (ETDEWEB)

    Sadhukhan, Sourav [Department of Polymer Science and Technology, University of Calcutta, 92 A.P.C. Road, Kolkata 700009 (India); Department of Chemistry, Budge Budge Institute of Technology, Nischintapur, Budge Budge, Kolkata 700137 (India); Ghosh, Tapas Kumar [Department of Polymer Science and Technology, University of Calcutta, 92 A.P.C. Road, Kolkata 700009 (India); Department of Chemistry, West Bengal State University, Barasat, Kolkata 700126 (India); Rana, Dipak [Department of Chemical and Biological Engineering, Industrial Membrane Research Institute, University of Ottawa, 161 Louis Pasteur St., Ottawa, Ontario K1 N 6N5 (Canada); Roy, Indranil; Bhattacharyya, Amartya; Sarkar, Gunjan [Department of Polymer Science and Technology, University of Calcutta, 92 A.P.C. Road, Kolkata 700009 (India); Chakraborty, Mukut [Department of Chemistry, West Bengal State University, Barasat, Kolkata 700126 (India); Chattopadhyay, Dipankar, E-mail: dipankar.chattopadhyay@gmail.com [Department of Polymer Science and Technology, University of Calcutta, 92 A.P.C. Road, Kolkata 700009 (India)

    2016-07-15

    Highlights: • RGO-1 and RGO-2 were synthesized by green method using different phytoextracts. • M. indica L., S. tuberosum L. phytoextracts act as reducing and stabilizing agents. • Conjugated structure of graphene is established following partial reduction of GO. • Electrical conductivities of RGO-1 and RGO-2 are higher than GO. - Abstract: An environmentally friendly method has been applied for the preparation of reduced graphene oxide (RGO). This method was developed by using polyphenols that contained a phytoextract of Mangifera indica L. along with Solanum tuberosum L. as reducing agents since they are non-toxic and naturally available. The phytoextracts used in the production of RGO was set between 60 and 70 °C. Graphene oxide (GO) was prepared by modified Hummer’s method as reported in earlier findings. Structural and morphological studies demonstrate that the part of the oxygen functionalities in GO can be removed by following green reduction. Characterizations of the resulting product have been done by X-ray diffraction, FTIR, UV–vis and Raman spectroscopy. FESEM, TEM, EDX spectrum, TGA, DLS and Zeta potential measurements of the samples have also been carried out to study the morphological, thermal and surface charge characteristics. Electrical conductivity was also measured to check the extent of reduction of GO to RGO.

  14. Studies on synthesis of reduced graphene oxide (RGO) via green route and its electrical property

    International Nuclear Information System (INIS)

    Sadhukhan, Sourav; Ghosh, Tapas Kumar; Rana, Dipak; Roy, Indranil; Bhattacharyya, Amartya; Sarkar, Gunjan; Chakraborty, Mukut; Chattopadhyay, Dipankar

    2016-01-01

    Highlights: • RGO-1 and RGO-2 were synthesized by green method using different phytoextracts. • M. indica L., S. tuberosum L. phytoextracts act as reducing and stabilizing agents. • Conjugated structure of graphene is established following partial reduction of GO. • Electrical conductivities of RGO-1 and RGO-2 are higher than GO. - Abstract: An environmentally friendly method has been applied for the preparation of reduced graphene oxide (RGO). This method was developed by using polyphenols that contained a phytoextract of Mangifera indica L. along with Solanum tuberosum L. as reducing agents since they are non-toxic and naturally available. The phytoextracts used in the production of RGO was set between 60 and 70 °C. Graphene oxide (GO) was prepared by modified Hummer’s method as reported in earlier findings. Structural and morphological studies demonstrate that the part of the oxygen functionalities in GO can be removed by following green reduction. Characterizations of the resulting product have been done by X-ray diffraction, FTIR, UV–vis and Raman spectroscopy. FESEM, TEM, EDX spectrum, TGA, DLS and Zeta potential measurements of the samples have also been carried out to study the morphological, thermal and surface charge characteristics. Electrical conductivity was also measured to check the extent of reduction of GO to RGO.

  15. Electrical and optical properties of reactive DC magnetron sputtered silver oxide thin films: role of oxygen

    Energy Technology Data Exchange (ETDEWEB)

    Kumar Barik, Ullash; Srinivasan, S; Nagendra, C L; Subrahmanyam, A

    2003-04-01

    Silver oxide thin films have been prepared on soda lime glass substrates at room temperature (300 K) by reactive DC Magnetron sputtering technique using pure silver metal target; the oxygen flow rates have been varied in the range 0.00-2.01 sccm. The X-ray diffraction data on these films show a systematic change from metallic silver to silver (sub) oxides. The electrical resistivity increases with increasing oxygen flow. The films show a p-type behavior (by both Hall and Seebeck measurements) for the oxygen flow rates of 0.54, 1.09 and 1.43 sccm. The refractive index of the films (at 632.8 nm) decreases with increasing oxygen content and is in the range 1.167-1.145, whereas the p-type films show a higher refractive index (1.186-1.204). The work function of these silver oxide films has been measured by Kelvin Probe technique. The results, in specific, the p-type conductivity in the silver oxide films, have been explained on the basis of the theory of partial ionic charge proposed by Sanderson.

  16. Electrical and optical properties of reactive DC magnetron sputtered silver oxide thin films: role of oxygen

    International Nuclear Information System (INIS)

    Kumar Barik, Ullash; Srinivasan, S.; Nagendra, C.L.; Subrahmanyam, A.

    2003-01-01

    Silver oxide thin films have been prepared on soda lime glass substrates at room temperature (300 K) by reactive DC Magnetron sputtering technique using pure silver metal target; the oxygen flow rates have been varied in the range 0.00-2.01 sccm. The X-ray diffraction data on these films show a systematic change from metallic silver to silver (sub) oxides. The electrical resistivity increases with increasing oxygen flow. The films show a p-type behavior (by both Hall and Seebeck measurements) for the oxygen flow rates of 0.54, 1.09 and 1.43 sccm. The refractive index of the films (at 632.8 nm) decreases with increasing oxygen content and is in the range 1.167-1.145, whereas the p-type films show a higher refractive index (1.186-1.204). The work function of these silver oxide films has been measured by Kelvin Probe technique. The results, in specific, the p-type conductivity in the silver oxide films, have been explained on the basis of the theory of partial ionic charge proposed by Sanderson

  17. A DFT analysis of the adsorption of nitrogen oxides on Fe-doped graphene, and the electric field induced desorption

    Science.gov (United States)

    Cortés-Arriagada, Diego; Villegas-Escobar, Nery

    2017-10-01

    Density functional theory calculations were carried out to study the adsorption and sensing properties of Fe-doped graphene nanosheets (FeG) toward nitrogen oxides (NO, NO2, and N2O). The results indicated the adsorption of nitrogen oxides is significantly increased onto FeG compared to pristine graphene, reaching adsorption energies of 1.1-2.2 eV, even with a high stability at room temperature. As a result of the larger charge transfer and strong chemical binding, the bandgap of the adsorbent-adsorbate systems is increased in up to 0.5 eV with respect to the free FeG, indicating that FeG is highly sensitive to nitrogen oxides. It was also evidenced the adsorption and sensing properties remain even in the presence of O2 currents for N2O, where a co-adsorption mechanism was analyzed. Besides, NO2 is capable to induce the largest magnetization of FeG. Finally, positive electric fields of at least 0.04 a.u. decrease the stability of the adsorbent-adsorbate interactions, inducing the desorption process. Therefore, FeG emerges as a promising low-dimensional material with excellent adsorption and sensing properties to be applied in solid state sensors of nitrogen oxides, where electric fields can be used as a strategy for the FeG reactivation in repetitive sensing applications.

  18. Electrically conductive anodized aluminum coatings

    Science.gov (United States)

    Alwitt, Robert S. (Inventor); Liu, Yanming (Inventor)

    2001-01-01

    A process for producing anodized aluminum with enhanced electrical conductivity, comprising anodic oxidation of aluminum alloy substrate, electrolytic deposition of a small amount of metal into the pores of the anodized aluminum, and electrolytic anodic deposition of an electrically conductive oxide, including manganese dioxide, into the pores containing the metal deposit; and the product produced by the process.

  19. Tuning the Electrical and Thermal Conductivities of Thermoelectric Oxides through Impurity Doping

    Science.gov (United States)

    Torres Arango, Maria A.

    Waste heat and thermal gradients available at power plants can be harvested to power wireless networks and sensors by using thermoelectric (TE) generators that directly transform temperature differentials into electrical power. Oxide materials are promising for TE applications in harsh industrial environments for waste heat recovery at high temperatures in air, because they are lightweight, cheaply produced, highly efficient, and stable at high temperatures in air. Ca3Co4O9(CCO) with layered structure is a promising p-type thermoelectric oxide with extrapolated ZT value of 0.87 in single crystal form [1]. However the ZT values for the polycrystalline ceramics remain low of ˜0.1-0.3. In this research, nanostructure engineering approaches including doping and addition of nanoinclusions were applied to the polycrystalline CCO ceramic to improve the energy conversion efficiency. Polycrystalline CCO samples with various Bi doping levels were prepared through the sol-gel chemical route synthesis of powders, pressing and sintering of the pellets. Microstructure features of Bi doped ceramic bulk samples such as porosity, development of crystal texture, grain boundary dislocations and segregation of Bi dopants at various grain boundaries are investigated from microns to atomic scale. The results of the present study show that the Bi-doping is affecting both the electrical conductivity and thermal conductivity simultaneously, and the optimum Bi doping level is strongly correlated with the microstructure and the processing conditions of the ceramic samples. At the optimum doping level and processing conditions of the ceramic samples, the Bi substitution of Ca results in the increase of the electrical conductivity, decrease of the thermal conductivity, and improvement of the crystal texture. The atomic resolution Scanning Transmission Electron Microscopy (STEM) Z-contrast imaging and the chemistry analysis also reveal the Bi-segregation at grain boundaries of CCO

  20. Microstructural and electrical characteristics of rare earth oxides doped ZnO varistor films

    Science.gov (United States)

    Jiao, Lei; Mei, Yunzhu; Xu, Dong; Zhong, Sujuan; Ma, Jia; Zhang, Lei; Bao, Li

    2018-02-01

    ZnO-Bi2O3 varistor films doped with two kinds of rare earth element oxides (Lu2O3 and Yb2O3) were prepared by the sol-gel method. The effects of Lu2O3/Yb2O3 doping on the microstructure and electrical characteristics of ZnO-Bi2O3 varistor films were investigated. All samples show a homogenized morphology and an improved nonlinear relationship between the electric field (E) and current density (I). Both Yb2O3 and Lu2O3 doping can decrease the grain size of ZnO-Bi2O3 varistor films and improve the electrical properties, which have a positive effect on the development of ZnO varistor ceramics. Yb2O3 doping significantly increases the dielectric constant at low frequency. 0.2 mol. % Yb2O3 doped ZnO-Bi2O3 varistor films exhibit the highest nonlinear coefficient (2.5) and the lowest leakage current (328 μA) among Lu2O3/Yb2O3 doped ZnO-Bi2O3 varistor films. Similarly, 0.1 mol. % Lu2O3 doping increases the nonlinear coefficient to 1.9 and decrease the leakage current to 462 μA.

  1. High-Surface-Area Nitrogen-Doped Reduced Graphene Oxide for Electric Double-Layer Capacitors.

    Science.gov (United States)

    Youn, Hee-Chang; Bak, Seong-Min; Kim, Myeong-Seong; Jaye, Cherno; Fischer, Daniel A; Lee, Chang-Wook; Yang, Xiao-Qing; Roh, Kwang Chul; Kim, Kwang-Bum

    2015-06-08

    A two-step method consisting of solid-state microwave irradiation and heat treatment under NH3 gas was used to prepare nitrogen-doped reduced graphene oxide (N-RGO) with a high specific surface area (1007 m(2)  g(-1) ), high electrical conductivity (1532 S m(-1) ), and low oxygen content (1.5 wt %) for electrical double-layer capacitor applications. The specific capacitance of N-RGO was 291 F g(-1) at a current density of 1 A g(-1) , and a capacitance of 261 F g(-1) was retained at 50 A g(-1) , which indicated a very good rate capability. N-RGO also showed excellent cycling stability and preserved 96 % of the initial specific capacitance after 100 000 cycles. Near-edge X-ray absorption fine-structure spectroscopy results provided evidenced for the recovery of π conjugation in the carbon networks with the removal of oxygenated groups and revealed chemical bonding of the nitrogen atoms in N-RGO. The good electrochemical performance of N-RGO is attributed to its high surface area, high electrical conductivity, and low oxygen content. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  2. Electrical characterization of a laminar manganese oxide type birnessite; Caracterizacion electrica de un oxido de manganeso laminar tipo birnesita

    Energy Technology Data Exchange (ETDEWEB)

    Arias, N. P.; Becerra, M. E.; Giraldo, O., E-mail: ohgiraldoo@unal.edu.co [Universidad Nacional de Colombia, Sede Manizales, Facultad de Ciencias Exactas y Naturales, Laboratorio de Materiales Nanoestructurados y Funcionales, Carrera 27 No. 64-60, 170004 Manizales (Colombia)

    2015-07-01

    This paper records the characterization of a manganese oxide synthesized by solid state routes which is analogous to natural mineral called birnessite. The analysis of X-ray diffraction and average oxidation state of manganese show that the material has a lamellar structure containing manganese in oxidation states (+4) and (+3). The results of electron microscopy along with surface area and pore size measurements reveal the presence of micro and meso pores in the material. Impedance spectroscopy suggests that high frequency electrical conduction occurs in the volume and on the border of the aggregates; in contrast, ionic conductivity at low frequencies was associated with potassium ions located in the interlaminar region. Ac conductivity values at low frequencies were 1.599 x 10{sup -6} Ω{sup -1} cm{sup -1} and 6.416 x 10{sup -5} Ω{sup -1} cm{sup -1} at high frequencies. These values are associated with an increased probability of electron jumping as frequency increases. These findings contribute to the understanding of electrical conduction processes and provides important information about its potential applications. As a result, this research will prove relevant in the field of batteries, super capacitors and heterogeneous catalysis, among others. (Author)

  3. Disruption of Memory Reconsolidation Erases a Fear Memory Trace in the Human Amygdala: An 18-Month Follow-Up.

    Directory of Open Access Journals (Sweden)

    Johannes Björkstrand

    Full Text Available Fear memories can be attenuated by reactivation followed by disrupted reconsolidation. Using functional magnetic resonance imaging we recently showed that reactivation and reconsolidation of a conditioned fear memory trace in the basolateral amygdala predicts subsequent fear expression over two days, while reactivation followed by disrupted reconsolidation abolishes the memory trace and suppresses fear. In this follow-up study we demonstrate that the behavioral effect persists over 18 months reflected in superior reacquisition after undisrupted, as compared to disrupted reconsolidation, and that neural activity in the basolateral amygdala representing the initial fear memory predicts return of fear. We conclude that disrupting reconsolidation have long lasting behavioral effects and may permanently erase the fear component of an amygdala-dependent memory.

  4. Intraoperative hemidiaphragm electrical stimulation reduces oxidative stress and upregulates autophagy in surgery patients undergoing mechanical ventilation: exploratory study

    Directory of Open Access Journals (Sweden)

    Robert T. Mankowski

    2016-10-01

    Full Text Available Abstract Background Mechanical ventilation (MV during a cardio-thoracic surgery contributes to diaphragm muscle dysfunction that impairs weaning and can lead to the ventilator- induced diaphragm dysfunction. Especially, it is critical in older adults who have lower muscle reparative capacity following MV. Reports have shown that the intraoperative intermittent hemidiaphragm electrical stimulation can maintain and/or improve post-surgery diaphragm function. In particular, from a molecular point of view, intermittent electrical stimulation (ES may reduce oxidative stress and increase regulatory autophagy levels, and therefore improve diaphragm function in animal studies. We have recently shown in humans that intraoperative ES attenuates mitochondrial dysfunction and force decline in single diaphragm muscle fibers. The aim of this study was to investigate an effect of ES on oxidative stress, antioxidant status and autophagy biomarker levels in the human diaphragm during surgery. Methods One phrenic nerve was simulated with an external cardiac pacer in operated older subjects (62.4 ± 12.9 years (n = 8 during the surgery. The patients received 30 pulses per min every 30 min. The muscle biopsy was collected from both hemidiaphragms and frozen for further analyses. 4-hydroxynonenal (4-HNE, an oxidative stress marker, and autophagy marker levels (Beclin-1 and the ratio of microtubule-associated protein light chain 3, I and II-LC3 II/I protein concentrations were detected by the Western Blot technique. Antioxidant enzymatic activity copper-zinc (CuZnSOD and manganese (MnSOD superoxide dismutase were analyzed. Results Levels of lipid peroxidation (4-HNE were significantly lower in the stimulated side (p  0.05. Additionally, the protein concentrations of Beclin-1 and the LC3 II/I ratio were higher in the stimulated side (p < 0.05. Conclusion These results suggest that the intraoperative electrical stimulation decreases oxidative stress levels

  5. Electrical conductivity of molten carbonate and carbonate-chloride systems coexisting with aluminium oxide powder

    Energy Technology Data Exchange (ETDEWEB)

    Nikolaeva, Elena V. [Institute of High Temperature Electrochemistry, Yekaterinburg (Russian Federation); Ural Federal Univ., Yekaterinburg (Russian Federation); Ural State Economic Univ., Yekaterinburg (Russian Federation); Bovet, Andrey L.; Zakiryanova, Irina D. [Institute of High Temperature Electrochemistry, Yekaterinburg (Russian Federation); Ural Federal Univ., Yekaterinburg (Russian Federation)

    2018-04-01

    The electrical properties of composite electrolytes (suspensions) composed of α-Al{sub 2}O{sub 3} powder and molten carbonate eutectic (Li{sub 2}CO{sub 3}-Na{sub 2}CO{sub 3}-K{sub 2}CO{sub 3}){sub eut} or molten carbonate-chloride mixture 0.72(Li{sub 2}CO{sub 3}-Na{sub 2}CO{sub 3}-K{sub 2}CO{sub 3}){sub eut}-0.28NaCl have been investigated by AC impedance method. This system shows a dependence of the electrical conductivity upon the temperature and the α-Al{sub 2}O{sub 3} content. The specific electrical conductivity of the α-Al{sub 2}O{sub 3}/(Li{sub 2}CO{sub 3}-Na{sub 2}CO{sub 3}-K{sub 2}CO{sub 3}){sub eut} system can be adequately described by the Maxwell equation for two-phase heterogeneous materials. The regression equation for the dependence of the specific conductivity of the α-Al{sub 2}O{sub 3}/(Li{sub 2}CO{sub 3}-Na{sub 2}CO{sub 3}-K{sub 2}CO{sub 3}){sub eut} composite on the aluminium oxide concentration and temperature was obtained.

  6. Effect of cerium oxide addition on electrical properties of ZnO

    Energy Technology Data Exchange (ETDEWEB)

    Ibrahim, D.M. [National Research Center, Dokki, Giza (Egypt). Dept. of Ceramics; Mounir, M. [Dept. of Physics, Cairo Univ., Giza (Egypt); Mahgoub, A.S. [Cairo Univ., Giza (Egypt). Dept. of Chemistry; Turky, G. [Dept. of Physics, National Research Center, Dokki, Giza (Egypt); El-Desouky, O.A. [Cer. Cleopatra Co., Ramadan City (Egypt)

    2002-07-01

    Mixtures of ZnO and Ce{sub 6} O{sub 11} as additive were prepared by solid state reaction from the calcined oxides with the following proportions: 0.03, 0.08, 0.1, 0.2 and 0.4 mole. Disc specimens 1.2 cm 5 cm in diameter and 0.3 cm thickness were processed under a force of 70 kN and fired at 1150 C/ 30 minutes. XRD revealed the presence of limited solid solution of cerium in ZnO, as evident from the shift in the peaks [0.03-0.04 A ] up to 0.1 mole addition and remains constant. SEM revealed the presence of inter-granular phase. EDAX showed it to be a mixture of ZnO and Ce{sub 6}O{sub 11}. Also cerium was detected in the ZnO grains confirming the XRD results. RCL circuit was used to measure the capacitance and resistance at different frequencies at room temperature. The dielectric constant and conductivity were calculated. The change in resistivity with temperature was followed up to 523 K. The change in dielectric strength with temperature at spot frequency of 10 kHz is demonstrated. The electrical conductivity was found to increase with the proportion of cerium oxide up to 0.2 mole then decreased. (orig.)

  7. Highly Conductive One-Dimensional Manganese Oxide Wires by Coating with Graphene Oxides

    Science.gov (United States)

    Tojo, Tomohiro; Shinohara, Masaki; Fujisawa, Kazunori; Muramatsu, Hiroyuki; Hayashi, Takuya; Ahm Kim, Yoong; Endo, Morinobu

    2012-10-01

    Through coating with graphene oxides, we have developed a chemical route to the bulk production of long, thin manganese oxide (MnO2) nanowires that have high electrical conductivity. The average diameter of these hybrid nanowires is about 25 nm, and their average length is about 800 nm. The high electrical conductivity of these nanowires (ca. 189.51+/-4.51 µS) is ascribed to the homogeneous coating with conductive graphene oxides as well as the presence of non-bonding manganese atoms. The growth mechanism of the nanowires is theoretically supported by the initiation of morphological conversion from graphene oxide to wrapped structures through the formation of covalent bonds between manganese and oxygen atoms at the graphene oxide edge.

  8. Structural and electrical characterization of bamboo-shaped C–N nanotubes–poly ethylene oxide (PEO) composite films

    International Nuclear Information System (INIS)

    Yadav, Ram Manohar; Dobal, Pramod S.

    2012-01-01

    We have prepared bamboo-shaped C–N nanotubes–polyethylene oxide (PEO) composite films by solution cast technique and investigated their structural/microstructural and electrical properties and developed a correlation between them. The formation of clean compartmentalized bamboo-shaped C–N nanotubes was confirmed by TEM. SEM investigations revealed a homogeneous dispersion of nanotubes in PEO matrix. Enhanced electrical conductivity was observed for the C–N nanotubes–PEO composites than bare PEO. The conductivity measurements on the C–N nanotubes–PEO composite films with ∼20 wt % concentration of C–N nanotubes showed an increase of eight orders (∼7.5 × 10 −8 to 6.2 S cm −1 ) of magnitude in conductivity from bare PEO film. Raman spectra showed the stress-free nature of the composites and established the bonding of nanotubes with PEO, which resulted in the variation of Raman parameters. The Raman data of composites corroborate the findings of variation in electrical conductivity.

  9. Industrial study of iron oxide reduction by injection of carbon particles into the electric arc furnace

    International Nuclear Information System (INIS)

    Conejo, A. N.; Torres, R.; Cuellar, E.

    1999-01-01

    An industrial study was conducted in electric arc furnaces (EAF) employing 100% direct reduced iron to evaluate the oxidation level of the slag-metal system. Energy consumption is decreased by injecting gaseous oxygen, however, slag oxidation also increases. In order to reduce the extent of oxidation while keeping a high volume of the oxygen injected , it is required: a) to optimize the carbon injection practice, b) to increase the carbon concentration of sponge iron, c) to operate with soluble carbon in both the metal and the slag beyond a critical level and d) to employ a low temperature profile, on average 1,650 degree centigrade. A method to define the proper amount of carbon in sponge iron which considers their metallization as well as the amount of oxygen injected is proposed. The position of the lance is critical in order to optimize the practice of carbon injection and assure a better residence time of the carbon particles within the furnace. (Author) 23 refs

  10. Electric modulation of conduction in multiferroic Ca-doped BiFeO3 films

    Science.gov (United States)

    Yang, C.-H.; Seidel, J.; Kim, S. Y.; Rossen, P. B.; Yu, P.; Gajek, M.; Chu, Y. H.; Martin, L. W.; Holcomb, M. B.; He, Q.; Maksymovych, P.; Balke, N.; Kalinin, S. V.; Baddorf, A. P.; Basu, S. R.; Scullin, M. L.; Ramesh, R.

    2009-06-01

    Many interesting materials phenomena such as the emergence of high-Tc superconductivity in the cuprates and colossal magnetoresistance in the manganites arise out of a doping-driven competition between energetically similar ground states. Doped multiferroics present a tantalizing evolution of this generic concept of phase competition. Here, we present the observation of an electronic conductor-insulator transition by control of band-filling in the model antiferromagnetic ferroelectric BiFeO3 through Ca doping. Application of electric field enables us to control and manipulate this electronic transition to the extent that a p-n junction can be created, erased and inverted in this material. A `dome-like' feature in the doping dependence of the ferroelectric transition is observed around a Ca concentration of ~1/8, where a new pseudo-tetragonal phase appears and the electric modulation of conduction is optimized. Possible mechanisms for the observed effects are discussed on the basis of the interplay of ionic and electronic conduction. This observation opens the door to merging magnetoelectrics and magnetoelectronics at room temperature by combining electronic conduction with electric and magnetic degrees of freedom already present in the multiferroic BiFeO3.

  11. Electrical properties of indium-tin oxide films deposited on nonheated substrates using a planar-magnetron sputtering system and a facing-targets sputtering system

    International Nuclear Information System (INIS)

    Iwase, Hideo; Hoshi, Youichi; Kameyama, Makoto

    2006-01-01

    Distribution of the electrical properties of indium-tin oxide (ITO) film prepared by both a planar-magnetron sputtering system (PMSS) and a facing-targets sputtering system (FTSS) at room temperature were investigated. It was found that the outstanding non-uniformities of the electrical properties in noncrystalline ITO films are mainly due to the variation of the oxygen stoichiometry dependent on film positions on substrate surfaces. Furthermore, ITO film with uniform distribution of electrical properties was obtainable using FTSS

  12. Synergistic effect of Ag nanoparticle-decorated graphene oxide and carbon fiber on electrical actuation of polymeric shape memory nanocomposites

    International Nuclear Information System (INIS)

    Lu, Haibao; Leng, Jinsong; Du, Shanyi; Liang, Fei; Gou, Jihua

    2014-01-01

    This study reports an effective approach of significantly improving electrical properties and recovery performance of shape memory polymer (SMP) nanocomposite, of which its shape recovery was triggered by electrically resistive Joule heating. Reduced graphene oxide (GOs) self-assembled and grafted onto carbon fiber, were used to enhance the interfacial bonding with the SMP matrix via van der Waals force and covalent bond, respectively. A layer of Ag nanoparticles was synthesized from Ag + solution and chemically deposited onto GO assemblies. These Ag nanoparticles were expected to bridge the gap between GO and improve the electrical conductivity. The experimental results reveal that the electrical conductivity of the SMP nanocomposite was significantly improved via the synergistic effect between Ag nanoparticle-decorated GO and carbon fiber. Finally, the electrically induced shape memory effect of the SMP nanocomposite was achieved, and the temperature distribution in the SMP nanocomposites was recorded and monitored. An effective approach was demonstrated to produce the electro-activated SMP nanocomposites and the resistive Joule heating was viable at a low electrical voltage below 10 V. (paper)

  13. Exploring Electric Polarization Mechanisms in Multiferroic Oxides

    Energy Technology Data Exchange (ETDEWEB)

    Tyson, Trevor A. [New Jersey Institute of Technology (NJIT), Newark, NJ (United States)

    2017-01-24

    Multiferroic oxides are a class of systems which exhibit coupling between the electrical polarization and the magnetization. These materials show promise to lead to devices in which ferromagnetic memory can be written with magnetic fields or magnetic bits can be written by an electric field. The work conducted in our research focuses on single phase materials. We studied the detailed coupling of the spin and lattice correlations in these systems. In the first phase of the proposal, we explored the complex spin spiral systems and low temperature behavior of hexagonal layered REMnO3 (RE= rare earth, Y and Sc) system following the detailed structural changes which occurred on crossing into the magnetic states. The techniques were applied to other layered materials such as superconductors and thermoelectric where the same layered motif exists. The second phase of the proposal focused on understanding the mechanisms involved in the onset high temperature ferroelectricity ion hexagonal REMnO3 and at low temperature in E-Type magnetic ordered perovskite REMnO3. We wsynthesized preovskite small A site multiferroics by high pressure and high temperature methods. Detailed measurement of the structural properties and dynamics were conducted over a range of length scales from atomic to mesoscopic scale using, x-ray absorption spectroscopy, x-ray diffuse scattering, x-ray and neutron pair distribution analysis and high resolution x-ray diffraction. Changes in vibration modes which occur with the onset of polarization were probed with temperature and pressure dependent infrared absorption spectroscopy. In addition the orthorhombic system (small radius RE ions) which is believed to exhibit electronically driven ferroelectricity and is also not understood was examined. The multiple length scale synchrotron based measurements may assist in developing more detailed models of these materials and possibly lead to device applications. The experimental

  14. Energy band structure and electrical properties of Ga-oxide/GaN interface formed by remote oxygen plasma

    Science.gov (United States)

    Yamamoto, Taishi; Taoka, Noriyuki; Ohta, Akio; Truyen, Nguyen Xuan; Yamada, Hisashi; Takahashi, Tokio; Ikeda, Mitsuhisa; Makihara, Katsunori; Nakatsuka, Osamu; Shimizu, Mitsuaki; Miyazaki, Seiichi

    2018-06-01

    The energy band structure of a Ga-oxide/GaN structure formed by remote oxygen plasma exposure and the electrical interface properties of the GaN metal–oxide–semiconductor (MOS) capacitors with the SiO2/Ga-oxide/GaN structures with postdeposition annealing (PDA) at various temperatures have been investigated. Reflection high-energy electron diffraction and X-ray photoelectron spectroscopy clarified that the formed Ga-oxide layer is neither a single nor polycrystalline phase with high crystallinity. We found that the energy band offsets at the conduction band minimum and at the valence band maximum between the Ga-oxide layer and the GaN surface were 0.4 and 1.2 ± 0.2 eV, respectively. Furthermore, capacitance–voltage (C–V) characteristics revealed that the interface trap density (D it) is lower than the evaluation limit of Terman method without depending on the PDA temperatures, and that the SiO2/Ga-oxide stack can work as a protection layer to maintain the low D it, avoiding the significant decomposition of GaN at the high PDA temperature of 800 °C.

  15. Simulation of trapping properties of high κ material as the charge storage layer for flash memory application

    International Nuclear Information System (INIS)

    Yeo, Yee Ngee; Wang Yingqian; Samanta, Santanu Kumar; Yoo, Won Jong; Samudra, Ganesh; Gao, Dongyue; Chong, Chee Ching

    2006-01-01

    We investigated the trapping properties of high κ material as the charge storage layer in non-volatile flash memory devices using a two-dimensional device simulator, Medici. The high κ material is sandwiched between two silicon oxide layers, resulting in the Silicon-Oxide-High κ-Oxide-Silicon (SOHOS) structure. The trap energy levels of the bulk electron traps in high κ material were determined. The programming and erasing voltage and time using Fowler Nordheim tunneling were estimated by simulation. The effect of deep level traps on erasing was investigated. Also, the effect of bulk traps density, thickness of block oxide and thickness of high κ material on the threshold voltage of the device was simulated

  16. Ash reduction system using electrically heated particulate matter filter

    Science.gov (United States)

    Gonze, Eugene V [Pinckney, MI; Paratore, Jr., Michael J; He, Yongsheng [Sterling Heights, MI

    2011-08-16

    A control system for reducing ash comprises a temperature estimator module that estimates a temperature of an electrically heated particulate matter (PM) filter. A temperature and position estimator module estimates a position and temperature of an oxidation wave within the electrically heated PM filter. An ash reduction control module adjusts at least one of exhaust flow, fuel and oxygen levels in the electrically heated PM filter to adjust a position of the oxidation wave within the electrically heated PM filter based on the oxidation wave temperature and position.

  17. Significant electrical control of amorphous oxide thin film transistors by an ultrathin Ti surface polarity modifier

    Energy Technology Data Exchange (ETDEWEB)

    Cho, Byungsu [Division of Materials Science and Engineering, Hanyang University, Seoul 133-791 (Korea, Republic of); Samsung Display Co. Ltd., Tangjeong, Chungcheongnam-Do 336-741 (Korea, Republic of); Choi, Yonghyuk; Shin, Seokyoon [Division of Materials Science and Engineering, Hanyang University, Seoul 133-791 (Korea, Republic of); Jeon, Heeyoung [Department of Nano-scale Semiconductor Engineering, Hanyang University, Seoul 133-791 (Korea, Republic of); Seo, Hyungtak, E-mail: hseo@ajou.ac.kr [Department of Materials Science and Engineering and Energy Systems Research, Ajou University, Suwon 443-739 (Korea, Republic of); Jeon, Hyeongtag, E-mail: hjeon@hanyang.ac.kr [Division of Materials Science and Engineering, Hanyang University, Seoul 133-791 (Korea, Republic of); Department of Nano-scale Semiconductor Engineering, Hanyang University, Seoul 133-791 (Korea, Republic of)

    2014-01-27

    We demonstrate an enhanced electrical stability through a Ti oxide (TiO{sub x}) layer on the amorphous InGaZnO (a-IGZO) back-channel; this layer acts as a surface polarity modifier. Ultrathin Ti deposited on the a-IGZO existed as a TiO{sub x} thin film, resulting in oxygen cross-binding with a-IGZO surface. The electrical properties of a-IGZO thin film transistors (TFTs) with TiO{sub x} depend on the surface polarity change and electronic band structure evolution. This result indicates that TiO{sub x} on the back-channel serves as not only a passivation layer protecting the channel from ambient molecules or process variables but also a control layer of TFT device parameters.

  18. Electrical analysis of high dielectric constant insulator and metal gate metal oxide semiconductor capacitors on flexible bulk mono-crystalline silicon

    KAUST Repository

    Ghoneim, Mohamed T.; Rojas, Jhonathan Prieto; Young, Chadwin D.; Bersuker, Gennadi; Hussain, Muhammad Mustafa

    2015-01-01

    We report on the electrical study of high dielectric constant insulator and metal gate metal oxide semiconductor capacitors (MOSCAPs) on a flexible ultra-thin (25 μm) silicon fabric which is peeled off using a CMOS compatible process from a standard

  19. Effect of O2 plasma immersion on electrical properties and transistor performance of indium gallium zinc oxide thin films

    International Nuclear Information System (INIS)

    Liu, P.; Chen, T.P.; Liu, Z.; Tan, C.S.; Leong, K.C.

    2013-01-01

    Evolution of electrical properties and thin-film transistor characteristics of amorphous indium gallium zinc oxide (IGZO) thin films synthesized by RF sputtering with O 2 plasma immersion has been examined. O 2 plasma immersion results in an enhancement in the Hall mobility and a decrease in the electron concentration; and the transistor performance can be greatly improved by the O 2 plasma immersion. X-ray photoelectron spectroscopy analysis indicates that the effect of O 2 plasma immersion on the electrical properties and the transistor performance can be attributed to the reduction of the oxygen-related defects in the IGZO thin films. - Highlights: • Oxygen plasma immersion effect on indium gallium zinc oxide thin film properties • Oxygen-related defect reduces in the InGaZnO thin film with oxygen plasma immersion. • Increasing oxygen plasma immersion duration on device will decrease the off current. • Oxygen plasma immersion enhances the performance of device

  20. Short-Term Synaptic Plasticity Regulation in Solution-Gated Indium-Gallium-Zinc-Oxide Electric-Double-Layer Transistors.

    Science.gov (United States)

    Wan, Chang Jin; Liu, Yang Hui; Zhu, Li Qiang; Feng, Ping; Shi, Yi; Wan, Qing

    2016-04-20

    In the biological nervous system, synaptic plasticity regulation is based on the modulation of ionic fluxes, and such regulation was regarded as the fundamental mechanism underlying memory and learning. Inspired by such biological strategies, indium-gallium-zinc-oxide (IGZO) electric-double-layer (EDL) transistors gated by aqueous solutions were proposed for synaptic behavior emulations. Short-term synaptic plasticity, such as paired-pulse facilitation, high-pass filtering, and orientation tuning, was experimentally emulated in these EDL transistors. Most importantly, we found that such short-term synaptic plasticity can be effectively regulated by alcohol (ethyl alcohol) and salt (potassium chloride) additives. Our results suggest that solution gated oxide-based EDL transistors could act as the platforms for short-term synaptic plasticity emulation.

  1. Structural, optical and electrical properties of tin oxide thin films for application as a wide band gap semiconductor

    Energy Technology Data Exchange (ETDEWEB)

    Sethi, Riti; Ahmad, Shabir; Aziz, Anver; Siddiqui, Azher Majid, E-mail: amsiddiqui@jmi.ac.in [Department of Physics, Jamia Millia Islamia, New Delhi-110025 (India)

    2015-08-28

    Tin oxide (SnO) thin films were synthesized using thermal evaporation technique. Ultra pure metallic tin was deposited on glass substrates using thermal evaporator under high vacuum. The thickness of the tin deposited films was kept at 100nm. Subsequently, the as-deposited tin films were annealed under oxygen environment for a period of 3hrs to obtain tin oxide films. To analyse the suitability of the synthesized tin oxide films as a wide band gap semiconductor, various properties were studied. Structural parameters were studied using XRD and SEM-EDX. The optical properties were studied using UV-Vis Spectrophotometry and the electrical parameters were calculated using the Hall-setup. XRD and SEM confirmed the formation of SnO phase. Uniform texture of the film can be seen through the SEM images. Presence of traces of unoxidised Sn has also been confirmed through the XRD spectra. The band gap calculated was around 3.6eV and the optical transparency around 50%. The higher value of band gap and lower value of optical transparency can be attributed to the presence of unoxidised Sn. The values of resistivity and mobility as measured by the Hall setup were 78Ωcm and 2.92cm{sup 2}/Vs respectively. The reasonable optical and electrical parameters make SnO a suitable candidate for optoelectronic and electronic device applications.

  2. Improvement of MRR and surface roughness during electrical discharge machining (EDM) using aluminum oxide powder mixed dielectric fluid

    Science.gov (United States)

    Khan, A. A.; Mohiuddin, A. K. M.; Latif, M. A. A.

    2018-01-01

    This paper discusses the effect of aluminium oxide (Al203) addition to dielectric fluid during electrical discharge machining (EDM). Aluminium oxide was added to the dielectric used in the EDM process to improve its performance when machining the stainless steel AISI 304, while copper was used as the electrode. Effect of the concentration of Al203 (0.3 mg/L) in dielectric fluid was compared with EDM without any addition of Al203. Surface quality of stainless steel and the material removal rate were investigated. Design of the experiment (DOE) was used for the experimental plan. Statistical analysis was done using ANOVA and then appropriate model was designated. The experimental results show that with dispersing of aluminium oxide in dielectric fluid surface roughness was improved while the material removal rate (MRR) was increased to some extent. These indicate the improvement of EDM performance using aluminium oxide in dielectric fluid. It was also found that with increase in pulse on time both MRR and surface roughness increase sharply.

  3. Influence of sputtering deposition parameters on electrical and optical properties of aluminium-doped zinc oxide thin films for photovoltaic applications

    Science.gov (United States)

    Krawczak, Ewelina; Agata, Zdyb; Gulkowski, Slawomir; Fave, Alain; Fourmond, Erwann

    2017-11-01

    Transparent Conductive Oxides (TCOs) characterized by high visible transmittance and low electrical resistivity play an important role in photovoltaic technology. Aluminum doped zinc oxide (AZO) is one of the TCOs that can find its application in thin film solar cells (CIGS or CdTe PV technology) as well as in other microelectronic applications. In this paper some optical and electrical properties of ZnO:Al thin films deposited by RF magnetron sputtering method have been investigated. AZO layers have been deposited on the soda lime glass substrates with use of variable technological parameters such as pressure in the deposition chamber, power applied and temperature during the process. The composition of AZO films has been investigated by EDS method. Thickness and refraction index of the deposited layers in dependence on certain technological parameters of sputtering process have been determined by spectroscopic ellipsometry. The measurements of transmittance and sheet resistance were also performed.

  4. Erasing Bisexual Identity: The Visibility and Invisibility of Bisexuality as a Sexual Identity in the Dutch Homosexual Movement, 1946-1972.

    Science.gov (United States)

    van Alphen, Elise C J

    2017-01-01

    Scholars of bisexuality commonly agree that bisexuality as a distinct sexual identity remained invisible for epistemic reasons until the 1970s. This article examines this dominant explanation for the late invention of bisexual identity by discussing how bisexuality functioned in the homosexual movement in the Netherlands from 1946 to the early 1970s. This historical case study shows that in the Netherlands bisexuality as an identity existed in the movement in the first postwar decades and was erased in the late 1960s, not only for epistemic reasons but also for tactical ones. The article aims to contribute to a better insight into the history of bisexuality and the politics in the Dutch postwar homosexual movement.

  5. Producing nitric oxide by pulsed electrical discharge in air for portable inhalation therapy.

    Science.gov (United States)

    Yu, Binglan; Muenster, Stefan; Blaesi, Aron H; Bloch, Donald B; Zapol, Warren M

    2015-07-01

    Inhalation of nitric oxide (NO) produces selective pulmonary vasodilation and is an effective therapy for treating pulmonary hypertension in adults and children. In the United States, the average cost of 5 days of inhaled NO for persistent pulmonary hypertension of the newborn is about $14,000. NO therapy involves gas cylinders and distribution, a complex delivery device, gas monitoring and calibration equipment, and a trained respiratory therapy staff. The objective of this study was to develop a lightweight, portable device to serve as a simple and economical method of producing pure NO from air for bedside or portable use. Two NO generators were designed and tested: an offline NO generator and an inline NO generator placed directly within the inspiratory line. Both generators use pulsed electrical discharges to produce therapeutic range NO (5 to 80 parts per million) at gas flow rates of 0.5 to 5 liters/min. NO was produced from air, as well as gas mixtures containing up to 90% O2 and 10% N2. Potentially toxic gases produced in the plasma, including nitrogen dioxide (NO2) and ozone (O3), were removed using a calcium hydroxide scavenger. An iridium spark electrode produced the lowest ratio of NO2/NO. In lambs with acute pulmonary hypertension, breathing electrically generated NO produced pulmonary vasodilation and reduced pulmonary arterial pressure and pulmonary vascular resistance index. In conclusion, electrical plasma NO generation produces therapeutic levels of NO from air. After scavenging to remove NO2 and O3 and filtration to remove particles, electrically produced NO can provide safe and effective treatment of pulmonary hypertension. Copyright © 2015, American Association for the Advancement of Science.

  6. Effect of Pulsed Electric Field on Membrane Lipids and Oxidative Injury of Salmonella typhimurium.

    Science.gov (United States)

    Yun, Ou; Zeng, Xin-An; Brennan, Charles S; Han, Zhong

    2016-08-22

    Salmonella typhimurium cells were subjected to pulsed electric field (PEF) treatment at 25 kV/cm for 0-4 ms to investigate the effect of PEF on the cytoplasmic membrane lipids and oxidative injury of cells. Results indicated that PEF treatment induced a decrease of membrane fluidity of Salmonella typhimurium (S. typhimuriumi), possibly due to the alterations of fatty acid biosynthesis-associated gene expressions (down-regulation of cfa and fabA gene expressions and the up-regulation of fabD gene expression), which, in turn, modified the composition of membrane lipid (decrease in the content ratio of unsaturated fatty acids to saturated fatty acids). In addition, oxidative injury induced by PEF treatment was associated with an increase in the content of malondialdehyde. The up-regulation of cytochrome bo oxidase gene expressions (cyoA, cyoB, and cyoC) indicated that membrane damage was induced by PEF treatment, which was related to the repairing mechanism of alleviating the oxidative injury caused by PEF treatment. Based on these results, we achieved better understanding of microbial injury induced by PEF, suggesting that micro-organisms tend to decrease membrane fluidity in response to PEF treatment and, thus, a greater membrane fluidity might improve the efficiency of PEF treatment to inactivate micro-organisms.

  7. Optical and electrical characteristics of zirconium oxide thin films deposited on silicon substrates by spray pyrolysis

    International Nuclear Information System (INIS)

    Aguilar-Frutis, M.; Araiza, J.J.; Falcony, C.; Garcia, M.

    2002-01-01

    The optical and electrical characteristics of zirconium oxide thin films deposited by spray pyrolysis on silicon substrates are reported. The films were deposited from a spraying solution of zirconium acetylacetonate in N,N-dimethylformamide using an ultrasonic mist generator on (100) Si substrates. The substrate temperature during deposition was in the range of 400 to 600 grad C. Deposition rates up to 16 A/sec were obtained depending on the spraying solution concentration and on the substrate temperature. A refraction index of the order of 2.0 was measured on these films by ellipsometry. The electrical characteristics of the films were determined from the capacitance and current versus voltage measurements. The addition of water mist during the spraying deposition process was also studied in the characteristics of the films. (Authors)

  8. Relationship between electrical properties and crystallization of indium oxide thin films using ex-situ grazing-incidence wide-angle x-ray scattering

    Science.gov (United States)

    González, G. B.; Okasinski, J. S.; Buchholz, D. B.; Boesso, J.; Almer, J. D.; Zeng, L.; Bedzyk, M. J.; Chang, R. P. H.

    2017-05-01

    Grazing-incidence, wide-angle x-ray scattering measurements were conducted on indium oxide thin films grown on silica substrates via pulsed laser deposition. Growth temperatures (TG) in this study ranged from -50 °C to 600 °C, in order to investigate the thermal effects on the film structure and its spatial homogeneity, as well as their relationship to electrical properties. Films grown below room temperature were amorphous, while films prepared at TG = 25 °C and above crystallized in the cubic bixbyite structure, and their crystalline fraction increased with deposition temperature. The electrical conductivity (σ) and electrical mobility (μ) were strongly enhanced at low deposition temperatures. For TG = 25 °C and 50 °C, a strong ⟨100⟩ preferred orientation (texture) occurred, but it decreased as the deposition temperature, and consequential crystallinity, increased. Higher variations in texture coefficients and in lattice parameters were measured at the film surface compared to the interior of the film, indicating strong microstructural gradients. At low crystallinity, the in-plane lattice spacing expanded, while the out-of-plane spacing contracted, and those values merged at TG = 400 °C, where high μ was measured. This directional difference in lattice spacing, or deviatoric strain, was linear as a function of both deposition temperature and the degree of crystallinity. The crystalline sample with TG = 100 °C had the lowest mobility, as well as film diffraction peaks which split into doublets. The deviatoric strains from these doublet peaks differ by a factor of four, supporting the presence of both a microstructure and strain gradient in this film. More isotropic films exhibit larger μ values, indicating that the microstructure directly correlates with electrical properties. These results provide valuable insights that can help to improve the desirable properties of indium oxide, as well as other transparent conducting oxides.

  9. Effects of electromagnetic radiation exposure on bone mineral density, thyroid, and oxidative stress index in electrical workers

    Directory of Open Access Journals (Sweden)

    Kunt H

    2016-02-01

    Full Text Available Halil Kunt,1,* İhsan Şentürk,2,* Yücel Gönül,3,* Mehmet Korkmaz,4 Ahmet Ahsen,5 Ömer Hazman,6 Ahmet Bal,7 Abdurrahman Genç,8 Ahmet Songur3 1Department of Science Education, Faculty of Education, Dumlupinar University, Kütahya, 2Department of Orthopedics and Traumatology, 3Department of Anatomy, Faculty of Medicine, Afyon Kocatepe University, Afyonkarahisar, 4Department of Radiology, Faculty of Medicine, Dumlupinar University, Kütahya, 5Department of Nephrology, Faculty of Medicine, 6Department of Biochemistry, Faculty of Science and Arts, 7Department of General Surgery, 8Department of Physiology, Faculty of Medicine, Afyon Kocatepe University, Afyonkarahisar, Turkey *These authors contributed equally to this work Background: In the literature, some articles report that the incidence of numerous diseases increases among the individuals who live around high-voltage electric transmission lines (HVETL or are exposed vocationally. However, it was not investigated whether HVETL affect bone metabolism, oxidative stress, and the prevalence of thyroid nodule.Methods: Dual-energy X-ray absorptiometry (DEXA bone density measurements, serum free triiodothyronine (FT3, free thyroxine (FT4, RANK, RANKL, osteoprotegerin (OPG, alkaline phosphatase (ALP, phosphor, total antioxidant status (TAS, total oxidant status (TOS, and oxidative stress index (OSI levels were analyzed to investigate this effect.Results: Bone mineral density levels of L1–L4 vertebrae and femur were observed significantly lower in the electrical workers. ALP, phosphor, RANK, RANKL, TOS, OSI, and anteroposterior diameter of the left thyroid lobe levels were significantly higher, and OPG, TAS, and FT4 levels were detected significantly lower in the study group when compared with the control group.Conclusion: Consequently, it was observed that the balance between construction and destruction in the bone metabolism of the electrical workers who were employed in HVETL replaced toward

  10. Microstructural and electrical characterization of Mn-Co spinel protective coatings for solid oxide cell interconnects

    DEFF Research Database (Denmark)

    Molin, S.; Sabato, A. G.; Bindi, M.

    2017-01-01

    Electrophoretic deposition, thermal co-evaporation and RF magnetron sputtering methods are used for the preparation of Mn-Co based ceramic coatings for solid oxide fuel cell steel interconnects. Both thin and relatively thick coatings (1–15 μm) are prepared and characterised for their potential...... protective behaviour. Mn-Co coated Crofer22APU samples are electrically tested for 5000 h at 800 °C under a 500 mA cm−2 current load to determine their Area Specific Resistance increase due to a growing chromia scale. After tests, samples are analysed by scanning and transmission electron microscopy....... Analysis is focused on the potential chromium diffusion to or through the coating, the oxide scale thickness and possible reactions at the interfaces. The relationships between the coating type, thickness and effectiveness are reviewed and discussed. Out of the three Mn-Co coatings compared in this study...

  11. Influence of sputtering deposition parameters on electrical and optical properties of aluminium-doped zinc oxide thin films for photovoltaic applications

    Directory of Open Access Journals (Sweden)

    Krawczak Ewelina

    2017-01-01

    Full Text Available Transparent Conductive Oxides (TCOs characterized by high visible transmittance and low electrical resistivity play an important role in photovoltaic technology. Aluminum doped zinc oxide (AZO is one of the TCOs that can find its application in thin film solar cells (CIGS or CdTe PV technology as well as in other microelectronic applications. In this paper some optical and electrical properties of ZnO:Al thin films deposited by RF magnetron sputtering method have been investigated. AZO layers have been deposited on the soda lime glass substrates with use of variable technological parameters such as pressure in the deposition chamber, power applied and temperature during the process. The composition of AZO films has been investigated by EDS method. Thickness and refraction index of the deposited layers in dependence on certain technological parameters of sputtering process have been determined by spectroscopic ellipsometry. The measurements of transmittance and sheet resistance were also performed.

  12. Fabrication of zinc indium oxide thin films and effect of post annealing on structural, chemical and electrical properties

    Energy Technology Data Exchange (ETDEWEB)

    Jain, Vipin Kumar, E-mail: vipinjain7678@gmail.com [Institute of Engineering and Technology, JK Lakshmipat University, Jaipur 302026 (India); Kumar, Praveen [Jawaharlal Nehru Centre for Advanced Scientific Research, Jakkur, Bangalore 560064 (India); Srivastava, Subodh; Vijay, Y.K. [Thin film and Membrane Science Laboratory, University of Rajasthan, Jaipur 302004 (India)

    2012-07-25

    Highlights: Black-Right-Pointing-Pointer ZIO films have been prepared by flash evaporation. Black-Right-Pointing-Pointer Thermal stability of ZIO films. Black-Right-Pointing-Pointer Structural, optical, electrical and other properties have been studied. - Abstract: In the present study, zinc indium oxide (ZIO) thin films were deposited on glass substrate with varying concentration (ZnO:In{sub 2}O{sub 3} - 100:0, 90:10, 70:30 and 50:50 wt.%) at room temperature by flash evaporation technique. These deposited ZIO films were annealed in vacuum to study the thermal stability and to see the effects on the structural, chemical and electrical properties. The XRD analysis indicates that crystallization of the ZIO films strongly depends on concentration of In{sub 2}O{sub 3} and post annealing where annealed films showed polycrystalline nature. The surface morphological study of the films using scanning electron microscopy (SEM) revealed the formation of nanostructured ZIO thin films. The surface composition and oxidation state were analyzed by X-ray photoelectron spectroscopy. XPS spectra shows that as the concentration of In{sub 2}O{sub 3} increases from 10 to 50 wt%, the surface composition ratio In/Zn and O/Zn increases for as-prepared and annealed ZIO films while the XPS valance band spectra manifest the electronic transitions. The electrical resistivity was found to be decreased while carrier concentration and Hall mobility increased for both types of films with increasing concentration of In{sub 2}O{sub 3}.

  13. [Efficiency of oxidant gas generator cells powered by electric or solar energy].

    Science.gov (United States)

    Brust Carmona, H; Benitez, A; Zarco, J; Sánchez, E; Mascher, I

    1998-02-01

    Diseases caused by microbial contaminants in drinking water continue to be a serious problem in countries like Mexico. Chlorination, using chlorine gas or chlorine compounds, is one of the best ways to treat drinking water. However, difficulties in handling chlorine gas and the inefficiency of hypochlorite solution dosing systems--due to sociopolitical, economic, and cultural factors--have reduced the utility of these chlorination procedures, especially in far-flung and inaccessible rural communities. These problems led to the development of appropriate technologies for the disinfection of water by means of the on-site generation of mixed oxidant gases (chlorine and ozone). This system, called MOGGOD, operates through the electrolysis of a common salt solution. Simulated system evaluation using a hydraulic model allowed partial and total costs to be calculated. When powered by electrical energy from the community power grid, the system had an efficiency of 90%, and in 10 hours it was able to generate enough gases to disinfect about 200 m3 of water at a cost of approximately N$8 (US $1.30). When the electrolytic cell was run on energy supplied through a photoelectric cell, the investment costs were higher. A system fed by photovoltaic cells could be justified in isolated communities that lack electricity but have a gravity-fed water distribution system.

  14. Chemical vapor deposition and electric characterization of perovskite oxides LaMO3 (M=Co, Fe, Cr and Mn) thin films

    International Nuclear Information System (INIS)

    Ngamou, Patrick Herve Tchoua; Bahlawane, Naoufal

    2009-01-01

    Oxides with a perovskite structure are important functional materials often used for the development of modern devices. In view of extending their applicability, it is necessary to efficiently control their growth as thin films using technologically relevant synthesis methods. Pulsed spray evaporation CVD was used to grow several perovskite-type oxides on planar silicon substrates at temperatures ranging from 500 to 700 deg. C. The optimization of the process control parameters allows the attainment of the perovskite structure as a single phase. The electrical characterization using the temperature-dependent conductivity and thermopower indicates the p-type conduction of the grown films and shows a decreasing concentration of the charge carrier, mobility and band gap energy in the sequence LaCoO 3 >LaMnO 3 >LaCrO 3 >LaFeO 3 . The investigation of the electric properties of the obtained perovskite thin films shows the versatility of CVD as a method for the development of innovative devices. - Graphical abstract: We report a single step deposition of perovskite thin films LaMO 3 (M: Co, Mn, Cr, Fe) using pulsed spray evaporation chemical vapor deposition. Electrical and thermopower properties, similar to these of bulk materials, could promote the development of modern thermoelectric devices based on thin films technology.

  15. Electricity Recovery from Municipal Sewage Wastewater Using a Hydrogel Complex Composed of Microbially Reduced Graphene Oxide and Sludge

    Directory of Open Access Journals (Sweden)

    Naoko Yoshida

    2016-08-01

    Full Text Available Graphene oxide (GO has recently been shown to be an excellent anode substrate for exoelectrogens. This study demonstrates the applicability of GO in recovering electricity from sewage wastewater. Anaerobic incubation of sludge with GO formed a hydrogel complex that embeds microbial cells via π-π stacking of microbially reduced GO. The rGO complex was electrically conductive (23 mS·cm−1 and immediately produced electricity in sewage wastewater under polarization at +200 mV vs. Ag/AgCl. Higher and more stable production of electricity was observed with rGO complexes (179–310 μA·cm−3 than with graphite felt (GF; 79–95 μA·cm−3. Electrochemical analyses revealed that this finding was attributable to the greater capacitance and smaller internal resistance of the rGO complex. Microbial community analysis showed abundances of Geobacter species in both rGO and GF complexes, whereas more diverse candidate exoelectrogens in the Desulfarculaceae family and Geothrix genus were particularly prominent in the rGO complex.

  16. Low-cost label-free electrical detection of artificial DNA nanostructures using solution-processed oxide thin-film transistors.

    Science.gov (United States)

    Kim, Si Joon; Jung, Joohye; Lee, Keun Woo; Yoon, Doo Hyun; Jung, Tae Soo; Dugasani, Sreekantha Reddy; Park, Sung Ha; Kim, Hyun Jae

    2013-11-13

    A high-sensitivity, label-free method for detecting deoxyribonucleic acid (DNA) using solution-processed oxide thin-film transistors (TFTs) was developed. Double-crossover (DX) DNA nanostructures with different concentrations of divalent Cu ion (Cu(2+)) were immobilized on an In-Ga-Zn-O (IGZO) back-channel surface, which changed the electrical performance of the IGZO TFTs. The detection mechanism of the IGZO TFT-based DNA biosensor is attributed to electron trapping and electrostatic interactions caused by negatively charged phosphate groups on the DNA backbone. Furthermore, Cu(2+) in DX DNA nanostructures generates a current path when a gate bias is applied. The direct effect on the electrical response implies that solution-processed IGZO TFTs could be used to realize low-cost and high-sensitivity DNA biosensors.

  17. Hierarchical Load Tracking Control of a Grid-connected Solid Oxide Fuel Cell for Maximum Electrical Efficiency Operation

    DEFF Research Database (Denmark)

    Li, Yonghui; Wu, Qiuwei; Zhu, Haiyu

    2015-01-01

    efficiency operation obtained at different active power output levels, a hierarchical load tracking control scheme for the grid-connected SOFC was proposed to realize the maximum electrical efficiency operation with the stack temperature bounded. The hierarchical control scheme consists of a fast active...... power control and a slower stack temperature control. The active power control was developed by using a decentralized control method. The efficiency of the proposed hierarchical control scheme was demonstrated by case studies using the benchmark SOFC dynamic model......Based on the benchmark solid oxide fuel cell (SOFC) dynamic model for power system studies and the analysis of the SOFC operating conditions, the nonlinear programming (NLP) optimization method was used to determine the maximum electrical efficiency of the grid-connected SOFC subject...

  18. Effects of in situ plasma treatment on optical and electrical properties of index-matched transparent conducting oxide layer

    International Nuclear Information System (INIS)

    Lim, Yong Hwan; Yoo, Hana; Choi, Bum Ho; Kim, Young Baek; Lee, Jong Ho; Shin, Dong Chan

    2010-01-01

    We investigated the effects of in situ plasma-treatment on optical and electrical properties of index-matched indium tin oxide (IMITO) thin film. To render the IMITO-coated surface hydrophilic and study the optical and electrical characteristics, we performed in situ oxygen plasma post-treatment without breaking vacuum. The 94.6% transmittance in the visible wavelength range (400-700 nm) increased on average to 96.4% and the maximum transmittance reached 98% over a broad wavelength range. The surface roughness and sheet resistance improved from 0.9 nm and 200 Ω/sq to 0.0905 nm and 100 Ω/sq, respectively, by in situ plasma post-treatment. We confirmed by contact angle measurement that the hydrophobic IMITO surface was altered to hydrophilic. The improved optical and electrical characteristics of in situ plasma-treated IMITO makes it adequate for high-resolution liquid crystal on silicon displays.

  19. Viscous properties of aluminum oxide nanotubes and aluminium oxide nanoparticles - silicone oil suspensions

    Science.gov (United States)

    Thapa, Ram; French, Steven; Delgado, Adrian; Ramos, Carlos; Gutierrez, Jose; Chipara, Mircea; Lozano, Karen

    2010-03-01

    Electrorheological (ER) fluids consisting of γ-aluminum oxide nanotubes and γ-aluminum oxide nanoparticles dispersed within silicone oil were prepared. The relationship between shear stress and shear rate was measured and theoretically simulated by using an extended Bingham model for both the rheological and electrorheological features of these systems. Shear stress and viscosity showed a sharp increase for the aluminum oxide nanotubes suspensions subjected to applied electric fields whereas aluminum oxide nanoparticles suspensions showed a moderate change. It was found that the transition from liquid to solid state (mediated by the applied electric field) can be described by a power law and that for low applied voltages the relationship is almost linear.

  20. Fabrication of polyaniline coated iron oxide hybrid particles and their dual stimuli-response under electric and magnetic fields

    Directory of Open Access Journals (Sweden)

    B. Sim

    2015-08-01

    Full Text Available Polyaniline (PANI-coated iron oxide (Fe3O4 sphere particles were fabricated and applied to a dual stimuliresponsive material under electric and magnetic fields, respectively. Sphere Fe3O4 particles were synthesized by a solvothermal process and protonated after acidification. The aniline monomer tended to surround the surface of the Fe3O4 core due to the electrostatic and hydrogen bond interactions. A core-shell structured product was finally formed by the oxidation polymerization of PANI on the surface of Fe3O4. The formation of Fe3O4@PANI particles was examined by scanning electron microscope and transmission electron microscope. The bond between Fe3O4 and PANI was confirmed by Fourier transform-infrared spectroscope and magnetic properties were analyzed by vibration sample magnetometer. A hybrid of a conducting and magnetic particle-based suspension displayed dual stimuli-response under electric and magnetic fields. The suspension exhibited typical electrorheological and magnetorheological behaviors of the shear stress, shear viscosity and dynamic yield stress, as determined using a rotational rheometer. Sedimentation stability was also compared between Fe3O4 and Fe3O4@PANI suspension.

  1. Enhancement in Mechanical and Electrical Properties of Polypropylene Using Graphene Oxide Grafted with End-Functionalized Polypropylene

    Directory of Open Access Journals (Sweden)

    Patchanee Chammingkwan

    2016-03-01

    Full Text Available Terminally hydroxylated polypropylene (PP synthesized by a chain transfer method was grafted to graphene oxide (GO at the chain end. Thus obtained PP-modified GO (PP-GO was melt mixed with PP without the use of a compatibilizer to prepare PP/GO nanocomposites. Mechanical and electrical properties of the resultant nanocomposites and reference samples that contained graphite nanoplatelets, partially reduced GO, or fully reduced GO were examined. The best improvement in the tensile strength was obtained using PP-GO at 1.0 wt %. The inclusion of PP-GO also led to the highest electrical conductivity, in spite of the incomplete reduction. These observations pointed out that terminally hydroxylated PP covalently grafted to GO prevented GO layers from re-stacking and agglomeration during melt mixing, affording improved dispersion as well as stronger interfacial bonding between the matrix and GO.

  2. Short review of high-pressure crystal growth and magnetic and electrical properties of solid-state osmium oxides

    Energy Technology Data Exchange (ETDEWEB)

    Yamaura, Kazunari, E-mail: YAMAURA.Kazunari@nims.go.jp [Superconducting Properties Unit, National Institute for Materials Science, 1-1 Namiki, Tsukuba, Ibaraki 305-0044 (Japan); Graduate School of Chemical Sciences and Engineering, Hokkaido University, North 10 West 8, Kita-ku, Sapporo, Hokkaido 060-0810 (Japan)

    2016-04-15

    High-pressure crystal growth and synthesis of selected solid-state osmium oxides, many of which are perovskite-related types, are briefly reviewed, and their magnetic and electrical properties are introduced. Crystals of the osmium oxides, including NaOsO{sub 3}, LiOsO{sub 3}, and Na{sub 2}OsO{sub 4}, were successfully grown under high-pressure and high-temperature conditions at 6 GPa in the presence of an appropriate amount of flux in a belt-type apparatus. The unexpected discovery of a magnetic metal–insulator transition in NaOsO{sub 3}, a ferroelectric-like transition in LiOsO{sub 3}, and high-temperature ferrimagnetism driven by a local structural distortion in Ca{sub 2}FeOsO{sub 6} may represent unique features of the osmium oxides. The high-pressure and high-temperature synthesis and crystal growth has played a central role in the development of solid-state osmium oxides and the elucidation of their magnetic and electronic properties toward possible use in multifunctional devices. - Graphical Abstract: Flux-grown crystals of NaOsO{sub 3} under high-pressure and high-temperature conditions in a belt-type apparatus. The crystal shows a magnetically driven metal–insulator transition at a temperature of 410 K. - Highlights: • Short review of high-pressure crystal growth of solid-state osmium oxides. • Wide variety of magnetic properties of solid-state osmium oxides. • Perovskite and related dense structures stabilized at 3–17 GPa.

  3. Nonlinear system identification of the reduction nickel oxide smelting process in electric arc furnace

    Science.gov (United States)

    Gubin, V.; Firsov, A.

    2018-03-01

    As the title implies the article describes the nonlinear system identification of the reduction smelting process of nickel oxide in electric arc furnaces. It is suggested that for operational control ratio of components of the charge must be solved the problem of determining the qualitative composition of the melt in real time. The use of 0th harmonic of phase voltage AC furnace as an indirect measure of the melt composition is proposed. Brief description of the mechanism of occurrence and nature of the non-zero 0th harmonic of the AC voltage of the arc is given. It is shown that value of 0th harmonic of the arc voltage is not function of electrical parameters but depends of the material composition of the melt. Processed industrial data are given. Hammerstein-Wiener model is used for description of the dependence of 0th harmonic of the furnace voltage from the technical parameters of melting furnace: the melt composition and current. Recommendations are given about the practical use of the model.

  4. Long-Term Stability of Oxide Nanowire Sensors via Heavily Doped Oxide Contact.

    Science.gov (United States)

    Zeng, Hao; Takahashi, Tsunaki; Kanai, Masaki; Zhang, Guozhu; He, Yong; Nagashima, Kazuki; Yanagida, Takeshi

    2017-12-22

    Long-term stability of a chemical sensor is an essential quality for long-term collection of data related to exhaled breath, environmental air, and other sources in the Internet of things (IoT) era. Although an oxide nanowire sensor has shown great potential as a chemical sensor, the long-term stability of sensitivity has not been realized yet due to electrical degradation under harsh sensing conditions. Here, we report a rational concept to accomplish long-term electrical stability of metal oxide nanowire sensors via introduction of a heavily doped metal oxide contact layer. Antimony-doped SnO 2 (ATO) contacts on SnO 2 nanowires show much more stable and lower electrical contact resistance than conventional Ti contacts for high temperature (200 °C) conditions, which are required to operate chemical sensors. The stable and low contact resistance of ATO was confirmed for at least 1960 h under 200 °C in open air. This heavily doped oxide contact enables us to realize the long-term stability of SnO 2 nanowire sensors while maintaining the sensitivity for both NO 2 gas and light (photo) detections. The applicability of our method is confirmed for sensors on a flexible polyethylene naphthalate (PEN) substrate. Since the proposed fundamental concept can be applied to various oxide nanostructures, it will give a foundation for designing long-term stable oxide nanomaterial-based IoT sensors.

  5. Electric charging/discharging characteristics of super capacitor, using de-alloying and anodic oxidized Ti-Ni-Si amorphous alloy ribbons.

    Science.gov (United States)

    Fukuhara, Mikio; Sugawara, Kazuyuki

    2014-01-01

    Charging/discharging behaviors of de-alloyed and anodic oxidized Ti-Ni-Si amorphous alloy ribbons were measured as a function of current between 10 pA and 100 mA, using galvanostatic charge/discharging method. In sharp contrast to conventional electric double layer capacitor (EDLC), discharging behaviors for voltage under constant currents of 1, 10 and 100 mA after 1.8 ks charging at 100 mA show parabolic decrease, demonstrating direct electric storage without solvents. The supercapacitors, devices that store electric charge on their amorphous TiO2-x surfaces that contain many 70-nm sized cavities, show the Ragone plot which locates at lower energy density region near the 2nd cells, and RC constant of 800 s (at 1 mHz), which is 157,000 times larger than that (5 ms) in EDLC.

  6. Iron aluminide useful as electrical resistance heating elements

    Science.gov (United States)

    Sikka, V.K.; Deevi, S.C.; Fleischhauer, G.S.; Hajaligol, M.R.; Lilly, A.C. Jr.

    1997-04-15

    The invention relates generally to aluminum containing iron-base alloys useful as electrical resistance heating elements. The aluminum containing iron-base alloys have improved room temperature ductility, electrical resistivity, cyclic fatigue resistance, high temperature oxidation resistance, low and high temperature strength, and/or resistance to high temperature sagging. The alloy has an entirely ferritic microstructure which is free of austenite and includes, in weight %, over 4% Al, {=}0.05% Zr or ZrO{sub 2} stringers extending perpendicular to an exposed surface of the heating element or {>=}0.1% oxide dispersoid particles. The alloy can contain 14-32% Al, {<=}2% Ti, {<=}2% Mo, {<=}1% Zr, {<=}1% C, {<=}0.1% B, {<=}30% oxide dispersoid and/or electrically insulating or electrically conductive covalent ceramic particles, {<=}1% rare earth metal, {<=}1% oxygen, {<=}3% Cu, balance Fe. 64 figs.

  7. Enhancement of the electrical characteristics of MOS capacitors by reducing the organic content of H2O-diluted Spin-On-Glass based oxides

    International Nuclear Information System (INIS)

    Molina, Joel; Munoz, Ana; Torres, Alfonso; Landa, Mauro; Alarcon, Pablo; Escobar, Manuel

    2011-01-01

    In this work, the physical, chemical and electrical properties of Metal-Oxide-Semiconductor (MOS) capacitors with Spin-On-Glass (SOG)-based thin films as gate dielectric have been investigated. Experiments of SOG diluted with two different solvents (2-propanol and deionized water) were done in order to reduce the viscosity of the SOG solution so that thinner films (down to ∼20 nm) could be obtained and their general characteristics compared. Thin films of SOG were deposited on silicon by the sol-gel technique and they were thermally annealed using conventional oxidation furnace and Rapid Thermal Processing (RTP) systems within N 2 ambient after deposition. SOG dilution using non-organic solvents like deionized water and further annealing (at relatively high temperatures ≥450 deg. C) are important processes intended to reduce the organic content of the films. Fourier-Transform Infrared (FTIR) Spectroscopy results have shown that water-diluted SOG films have a significant reduction in their organic content after increasing annealing temperature and/or dilution percentage when compared to those of undiluted SOG films. Both current-voltage (I-V) and capacitance-voltage (C-V) measurements show better electrical characteristics for SOG-films diluted in deionized water compared to those diluted in 2-propanol (which is an organic solvent). The electrical characteristics of H 2 O-diluted SOG thin films are very similar to those obtained from high quality thermal oxides so that their application as gate dielectrics in MOS devices is promising. Finally, it has been demonstrated that by reducing the organic content of SOG-based thin films, it is possible to obtain MOS devices with better electrical properties.

  8. Compositional influence on the electrical performance of zinc indium tin oxide transparent thin-film transistors

    International Nuclear Information System (INIS)

    Marsal, A.; Carreras, P.; Puigdollers, J.; Voz, C.; Galindo, S.; Alcubilla, R.; Bertomeu, J.; Antony, A.

    2014-01-01

    In this work, zinc indium tin oxide layers with different compositions are used as the active layer of thin film transistors. This multicomponent transparent conductive oxide is gaining great interest due to its reduced content of the scarce indium element. Experimental data indicate that the incorporation of zinc promotes the creation of oxygen vacancies, which results in a higher free carrier density. In thin-film transistors this effect leads to a higher off current and threshold voltage values. The field-effect mobility is also strongly degraded, probably due to coulomb scattering by ionized defects. A post deposition annealing in air reduces the density of oxygen vacancies and improves the field-effect mobility by orders of magnitude. Finally, the electrical characteristics of the fabricated thin-film transistors have been analyzed to estimate the density of states in the gap of the active layers. These measurements reveal a clear peak located at 0.3 eV from the conduction band edge that could be attributed to oxygen vacancies. - Highlights: • Zinc promotes the creation of oxygen vacancies in zinc indium tin oxide transistors. • Post deposition annealing in air reduces the density of oxygen. • Density of states reveals a clear peak located at 0.3 eV from the conduction band

  9. Enhancement of the electrical characteristics of thin-film transistors with indium-zinc-tin oxide/Ag/indium-zinc-tin oxide multilayer electrodes

    Science.gov (United States)

    Oh, Dohyun; Yun, Dong Yeol; Cho, Woon-Jo; Kim, Tae Whan

    2014-08-01

    Transparent indium-zinc-tin oxide (IZTO)-based thin-film transistors (TFTs) with IZTO/Ag/IZTO multilayer electrodes were fabricated on glass substrates using a tilted dual-target radio-frequency magnetron sputtering system. The IZTO TFTs with IZTO/Ag/IZTO multilayer electrodes exhibited a high optical transmittance in a visible region. The threshold voltage, the mobility, and the on/off-current ratio of the TFTs with IZTO/Ag/IZTO multilayer electrodes were enhanced in comparison with those of the TFTs with ITO electrodes. The source/drain contact resistance of the IZTO TFTs with IZTO/Ag/IZTO multilayer electrodes was smaller than that of the IZTO TFTs with ITO electrodes, resulting in enhancement of their electrical characteristics.

  10. Protected electrodes for plasma panels

    International Nuclear Information System (INIS)

    Hall, S.W.

    1984-01-01

    A metal oxide coating is applied between the conductive base and the magnesium oxide dielectric of the input and/or erase electrode(s) in a plasma display device to prevent break-down of the dielectric

  11. Optical and electrical characterizations of nanocomposite film of titania adsorbed onto oxidized multiwalled carbon nanotubes

    International Nuclear Information System (INIS)

    Feng Wei; Feng Yiyu; Wu Zigang; Fujii, Akihiko; Ozaki, Masanori; Yoshino, Katsumi

    2005-01-01

    Composite film containing titania electrostatically linked to oxidized multiwalled carbon nanotubes (TiO 2 -s-MWNTs) was prepared from a suspension of TiO 2 nanoparticles in soluble carbon nanotubes. The structure of the film was analysed principally by Fourier transform infrared spectroscopy, scanning electron micrography and x-ray diffraction. The optical and electrical characterizations of the film were investigated by UV-vis spectrum, photoluminescence and photoconductivity. The enhancement of photocurrent in the TiO 2 -s-MWNT film is discussed by taking the photoinduced charge transfer between the MWNT and TiO 2 into consideration

  12. Ultra High Electrical Performance of Nano Nickel Oxide and Polyaniline Composite Materials

    Directory of Open Access Journals (Sweden)

    Xiaomin Cai

    2017-07-01

    Full Text Available The cooperative effects between the PANI (polyaniline/nano-NiO (nano nickel oxide composite electrode material and redox electrolytes (potassium iodide, KI for supercapacitor applications was firstly discussed in this article, providing a novel method to prepare nano-NiO by using β-cyelodextrin (β-CD as the template agent. The experimental results revealed that the composite electrode processed a high specific capacitance (2122.75 F·g−1 at 0.1 A·g−1 in 0.05 M KI electrolyte solution, superior energy density (64.05 Wh·kg−1 at 0.2 A·g−1 in the two-electrode system and excellent cycle performance (86% capacitance retention after 1000 cycles at 1.5 A·g−1. All those ultra-high electrical performances owe to the KI active material in the electrolyte and the PANI coated nano-NiO structure.

  13. Upgrading versus reforming: an energy and exergy analysis of two Solid Oxide Fuel Cell-based systems for a convenient biogas-to-electricity conversion

    International Nuclear Information System (INIS)

    Baldinelli, A.; Barelli, L.; Bidini, G.

    2017-01-01

    Highlights: • Biogas-to-electricity conversion through Solid Oxide Fuel Cell is investigated. • Two solutions are compared for biogas-to-electricity conversion. • Direct feeding by partially upgraded biogas meets with fuel cell long operation. • Best energy and exergy performances are obtained with an innovative system-design. • A sensitivity analysis on the process parameters determines its convenience margin. - Abstract: Aiming at designing biogas-to-electricity advanced systems, Solid Oxide Fuel Cells are promising candidates. They benefit from scalability on plant sizes that suit anaerobic digesters potentialities. For biogas-Solid Oxide Fuel Cells applications, the implementation of an external pre-reformer is usually considered. However, the possibility to perform direct fuel feeding to the Solid Oxide Fuel Cell offers new opportunities towards the realization of lean systems, which are competitive especially on small-scale installations (i.e. on-farm biogas-to-electricity conversion). In this frame, scientific literature is rather poor and, to cover this gap, system simulations are called for two reasons: first, to demonstrate the potential efficiency gain of new concepts; second, to provide a meaningful support for long-term experimental investigation on Solid Oxide Fuel Cells operated upon direct feeding of unreformed biogas. For that, the current study compares two system designs for biogas utilization into Solid Oxide Fuel Cells. The conventional one realizes biogas steam reforming prior the fuel cell, while the novel concept is based on direct feeding of partially upgraded biogas by means of carbon dioxide-separation membranes. As main outcome of the study, the system equipped with carbon dioxide-separation membranes achieves better performances than its conventional competitor does, scoring 51.1% energy efficiency and 52.3% exergy efficiency (compared to 37.2% and 38.6% respectively exhibited by the reformer-based system). Because of the lack

  14. Superparamagnetic magnetite nanocrystals-graphene oxide nanocomposites: facile synthesis and their enhanced electric double-layer capacitor performance.

    Science.gov (United States)

    Wang, Qihua; Wang, Dewei; Li, Yuqi; Wang, Tingmei

    2012-06-01

    Superparamagnetic magnetite nanocrystals-graphene oxide (FGO) nanocomposites were successfully synthesized through a simple yet versatile one-step solution-processed approach at ambient conditions. Magnetite (Fe3O4) nanocrystals (NCs) with a size of 10-50 nm were uniformly deposited on the surfaces of graphene oxide (GO) sheets, which were confirmed by transmission electron microscopy (TEM) and high-angle annular dark field scanning transmission election microscopy (HAADF-STEM) studies. FGO with different Fe3O4 loadings could be controlled by simply manipulating the initial weight ratio of the precursors. The M-H measurements suggested that the as-prepared FGO nanocomposites have a large saturation magnetizations that made them can move regularly under an external magnetic field. Significantly, FGO nanocomposites also exhibit enhanced electric double-layer capacitor (EDLC) activity compared with pure Fe3O4 NCs and GO in terms of specific capacitance and high-rate charge-discharge.

  15. High-density carrier-accumulated and electrically stable oxide thin-film transistors from ion-gel gate dielectric.

    Science.gov (United States)

    Fujii, Mami N; Ishikawa, Yasuaki; Miwa, Kazumoto; Okada, Hiromi; Uraoka, Yukiharu; Ono, Shimpei

    2015-12-18

    The use of indium-gallium-zinc oxide (IGZO) has paved the way for high-resolution uniform displays or integrated circuits with transparent and flexible devices. However, achieving highly reliable devices that use IGZO for low-temperature processes remains a technological challenge. We propose the use of IGZO thin-film transistors (TFTs) with an ionic-liquid gate dielectric in order to achieve high-density carrier-accumulated IGZO TFTs with high reliability, and we discuss a distinctive mechanism for the degradation of this organic-inorganic hybrid device under long-term electrical stress. Our results demonstrated that an ionic liquid or gel gate dielectric provides highly reliable and low-voltage operation with IGZO TFTs. Furthermore, high-density carrier accumulation helps improve the TFT characteristics and reliability, and it is highly relevant to the electronic phase control of oxide materials and the degradation mechanism for organic-inorganic hybrid devices.

  16. Controlling the electrical properties of ZnO films by forming zinc and oxide bridges by a plasma and electron-assisted process

    Directory of Open Access Journals (Sweden)

    Norihiro Shimoi

    2012-06-01

    Full Text Available A new method to produce electrically steady ZnO films without any heating process has been developed by using plasma and electron beams to facilitate bonding between the metallic component and the oxygen on coated ZnO films. Both plasma atmosphere and electron beams can function as sources of nonequilibrium bonding energy, forming bridges between the zinc present in the zinc complex and the oxygen in the ZnO particles to construct a zinc-oxide thin film. Our results confirm that it is possible to achieve low conductive characteristics by controlling the acceleration voltage of electrons used to irradiate the ZnO coating. The electrically steady films fabricated have various potential applications, being particularly well-suited to electrical devices on a plastic medium.

  17. Controlling the electrical properties of ZnO films by forming zinc and oxide bridges by a plasma and electron-assisted process

    Energy Technology Data Exchange (ETDEWEB)

    Shimoi, Norihiro; Tanaka, Yasumitsu [Graduate School of Environmental Studies, Tohoku University, 6-6-20 Aoba, Aramaki, Aoba-ku, Sendai 980-8579 (Japan); Harada, Takamitsu [Sendai Technology Center, Consumer-Professional and Devices Group, Sony Corporation, 3-4-1 Sakuragi, Tagajo 985-0842 (Japan); Tanaka, Shun-ichiro [Institute of Multidisciplinary Research for Advanced Materials, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577 (Japan)

    2012-06-15

    A new method to produce electrically steady ZnO films without any heating process has been developed by using plasma and electron beams to facilitate bonding between the metallic component and the oxygen on coated ZnO films. Both plasma atmosphere and electron beams can function as sources of nonequilibrium bonding energy, forming bridges between the zinc present in the zinc complex and the oxygen in the ZnO particles to construct a zinc-oxide thin film. Our results confirm that it is possible to achieve low conductive characteristics by controlling the acceleration voltage of electrons used to irradiate the ZnO coating. The electrically steady films fabricated have various potential applications, being particularly well-suited to electrical devices on a plastic medium.

  18. Electric-field-control of magnetic anisotropy of Co0.6Fe0.2B0.2/oxide stacks using reduced voltage

    Science.gov (United States)

    Kita, Koji; Abraham, David W.; Gajek, Martin J.; Worledge, D. C.

    2012-08-01

    We have demonstrated purely electrical manipulation of the magnetic anisotropy of a Co0.6Fe0.2B0.2 film by applying only 8 V across the CoFeB/oxide stack. A clear transition from in-plane to perpendicular anisotropy was observed. The quantitative relationship between interface anisotropy energy and the applied electric-field was determined from the linear voltage dependence of the saturation field. By comparing the dielectric stacks of MgO/Al2O3 and MgO/HfO2/Al2O3, enhanced voltage control was also demonstrated, due to the higher dielectric constant of the HfO2. These results suggest the feasibility of purely electrical control of magnetization with small voltage bias for spintronics applications.

  19. Rapidly curable electrically conductive clear coatings

    Energy Technology Data Exchange (ETDEWEB)

    Bowman, Mark P.; Anderson, Lawrence G.; Post, Gordon L.

    2018-01-16

    Rapidly curable electrically conductive clear coatings are applied to substrates. The electrically conductive clear coating includes to clear layer having a resinous binder with ultrafine non-stoichiometric tungsten oxide particles dispersed therein. The clear coating may be rapidly cured by subjecting the coating to infrared radiation that heats the tungsten oxide particles and surrounding resinous binder. Localized heating increases the temperature of the coating to thereby thermally cure the coating, while avoiding unwanted heating of the underlying substrate.

  20. Development of a Novel Efficient Solid-Oxide Hybrid for Co-generation of Hydrogen and Electricity Using Nearby Resources for Local Application

    Energy Technology Data Exchange (ETDEWEB)

    Tao, Greg, G.; Virkar, Anil, V.; Bandopadhyay, Sukumar; Thangamani, Nithyanantham; Anderson, Harlan, U.; Brow, Richard, K.

    2009-06-30

    Developing safe, reliable, cost-effective, and efficient hydrogen-electricity co-generation systems is an important step in the quest for national energy security and minimized reliance on foreign oil. This project aimed to, through materials research, develop a cost-effective advanced technology cogenerating hydrogen and electricity directly from distributed natural gas and/or coal-derived fuels. This advanced technology was built upon a novel hybrid module composed of solid-oxide fuel-assisted electrolysis cells (SOFECs) and solid-oxide fuel cells (SOFCs), both of which were in planar, anode-supported designs. A SOFEC is an electrochemical device, in which an oxidizable fuel and steam are fed to the anode and cathode, respectively. Steam on the cathode is split into oxygen ions that are transported through an oxygen ion-conducting electrolyte (i.e. YSZ) to oxidize the anode fuel. The dissociated hydrogen and residual steam are exhausted from the SOFEC cathode and then separated by condensation of the steam to produce pure hydrogen. The rationale was that in such an approach fuel provides a chemical potential replacing the external power conventionally used to drive electrolysis cells (i.e. solid oxide electrolysis cells). A SOFC is similar to the SOFEC by replacing cathode steam with air for power generation. To fulfill the cogeneration objective, a hybrid module comprising reversible SOFEC stacks and SOFC stacks was designed that planar SOFECs and SOFCs were manifolded in such a way that the anodes of both the SOFCs and the SOFECs were fed the same fuel, (i.e. natural gas or coal-derived fuel). Hydrogen was produced by SOFECs and electricity was generated by SOFCs within the same hybrid system. A stand-alone 5 kW system comprising three SOFEC-SOFC hybrid modules and three dedicated SOFC stacks, balance-of-plant components (including a tailgas-fired steam generator and tailgas-fired process heaters), and electronic controls was designed, though an overall

  1. Optical and electrical properties of thin films of bismuth ferric oxide

    International Nuclear Information System (INIS)

    Cardona R, D.

    2014-01-01

    The bismuth ferric oxide (BFO) has caused great attention in recent years because of their multi ferric properties, making it very attractive for different technological applications. In this paper simultaneous ablation of two white (Bi and Fe 2 O 3 ) was used in a reactive atmosphere (containing oxygen) to deposit thin films of BFO. The composition of the films is changed by controlling the plasma parameters such as the average kinetic energy of the ions (E p) and the plasma density (Np). The effects caused by excess of Bi and Fe in atomic structure and the optical and electrical properties of the films BiFeO 3 in terms of plasma parameters were studied. The X-ray diffraction patterns of BFO samples with excess of bismuth above 2% at. They exhibited small changes in structure leading to improved levels of leakage currents compared to levels of the film with a stoichiometry close to BiFeO 3 composition. These samples showed a secondary phase (Bi 2 5FeO 4 0 selenite type) that led to the increase in the values of band gap and resistivity as well as the improvement of the piezoelectric properties. On the other hand, the films with iron excess showed as secondary phase compounds of iron oxide (α - γ-Fe 2 O 3 ) that caused increments in the conductivity and decrease in the values of band gap. The results are discussed in terms of the excesses of Bi and Fe which were correlated with the plasma parameters. (Author)

  2. Tuning of electrical and structural properties of indium oxide films grown by metal organic chemical vapor deposition

    International Nuclear Information System (INIS)

    Wang, Ch.Y.; Cimalla, V.; Romanus, H.; Kups, Th.; Niebelschuetz, M.; Ambacher, O.

    2007-01-01

    Tuning of structural and electrical properties of indium oxide (In 2 O 3 ) films by means of metal organic chemical vapor deposition is demonstrated. Phase selective growth of rhombohedral In 2 O 3 (0001) and body-centered cubic In 2 O 3 (001) polytypes on (0001) sapphire substrates was obtained by adjusting the substrate temperature and trimethylindium flow rate. The specific resistance of the as-grown films can be tuned by about two orders of magnitude by varying the growth conditions

  3. Combining plasma gasification and solid oxide cell technologies in advanced power plants for waste to energy and electric energy storage applications.

    Science.gov (United States)

    Perna, Alessandra; Minutillo, Mariagiovanna; Lubrano Lavadera, Antonio; Jannelli, Elio

    2018-03-01

    The waste to energy (WtE) facilities and the renewable energy storage systems have a strategic role in the promotion of the "eco-innovation", an emerging priority in the European Union. This paper aims to propose advanced plant configurations in which waste to energy plants and electric energy storage systems from intermittent renewable sources are combined for obtaining more efficient and clean energy solutions in accordance with the "eco-innovation" approach. The advanced plant configurations consist of an electric energy storage (EES) section based on a solid oxide electrolyzer (SOEC), a waste gasification section based on the plasma technology and a power generation section based on a solid oxide fuel cell (SOFC). The plant configurations differ for the utilization of electrolytic hydrogen and oxygen in the plasma gasification section and in the power generation section. In the first plant configuration IAPGFC (Integrated Air Plasma Gasification Fuel Cell), the renewable oxygen enriches the air stream, that is used as plasma gas in the gasification section, and the renewable hydrogen is used to enrich the anodic stream of the SOFC in the power generation section. In the second plant configuration IHPGFC (Integrated Hydrogen Plasma Gasification Fuel Cell) the renewable hydrogen is used as plasma gas in the plasma gasification section, and the renewable oxygen is used to enrich the cathodic stream of the SOFC in the power generation section. The analysis has been carried out by using numerical models for predicting and comparing the systems performances in terms of electric efficiency and capability in realizing the waste to energy and the electric energy storage of renewable sources. Results have highlighted that the electric efficiency is very high for all configurations (35-45%) and, thanks to the combination with the waste to energy technology, the storage efficiencies are very attractive (in the range 72-92%). Copyright © 2017 Elsevier Ltd. All rights

  4. Novel Non-Stoichiometric Manganese – Cobalt – Nickel – Oxide Composite as Humidity Sensor Through Solid-State Electrical Conductivity Measurements

    Directory of Open Access Journals (Sweden)

    R. Sundaram

    2006-08-01

    Full Text Available Equimolar amounts of manganese(II chloride, cobalt(III nitrate and nickel(II chloride in aqueous solution were reacted with ammonia and the resulting precipitate of hydroxides was heated to 7500 C in 6h to yield a non stoichiometric oxides having a composition of Mn0.06Co0.6Ni0.6O2.5 as analyzed by atomic absorption spectroscopy to a pellet and sintered at 6000 C. Characterization of the material has been made with AAS, Far-IR, TG-DTA, XRD, SEM, VSM and electrical conductance measurement. The far-IR spectra indicated the presence of metal-oxygen bonds and the discrete nature of the oxide was established from power X-ray diffraction pattern recorded at room temperature. The thermogravimetric data indicated the successive loss and gain of fraction of oxygen atoms, a specific feature of non-stoichiometric metal oxides. It was subjected to solid-state DC electrical conductivity measurements at room temperature. The current increases linearly with applied field and exponentially with increase in temperature showing conformance to ohmic law and semiconducting nature. The scanning electron microscopy (SEM studies were carried out to study the surface and pores structure of the sensor materials. The Brunauer-Emmett-Teller (BET surface adsorption studies showed that the radiuses of the pore sizes were found to be distributed from 10-45A with the pore specific volume being 0.01 cm3 g-1. As the composites having micropores are preferred for humidity sensing properties, the material was subjected to water vapour of different humidity achieved by various water buffers at room temperature and the electrical conductivity was measured as a function of relative humidity (RH. The electrical resistivity drastically decreases with increase in humidity, proving the material to be a good water vapour sensor. The sensitivity factor (Sf was 55000 in the range 5–98% RH, meaning the resistivity falls by a factor of 5.5 x 104 when the atmospheric RH increases from 5

  5. Iron aluminide useful as electrical resistance heating elements

    Science.gov (United States)

    Sikka, Vinod K.; Deevi, Seetharama C.; Fleischhauer, Grier S.; Hajaligol, Mohammad R.; Lilly, Jr., A. Clifton

    1997-01-01

    The invention relates generally to aluminum containing iron-base alloys useful as electrical resistance heating elements. The aluminum containing iron-base alloys have improved room temperature ductility, electrical resistivity, cyclic fatigue resistance, high temperature oxidation resistance, low and high temperature strength, and/or resistance to high temperature sagging. The alloy has an entirely ferritic microstructure which is free of austenite and includes, in weight %, over 4% Al, .ltoreq.1% Cr and either .gtoreq.0.05% Zr or ZrO.sub.2 stringers extending perpendicular to an exposed surface of the heating element or .gtoreq.0.1% oxide dispersoid particles. The alloy can contain 14-32% Al, .ltoreq.2% Ti, .ltoreq.2% Mo, .ltoreq.1% Zr, .ltoreq.1% C, .ltoreq.0.1% B, .ltoreq.30% oxide dispersoid and/or electrically insulating or electrically conductive covalent ceramic particles, .ltoreq.1% rare earth metal, .ltoreq.1% oxygen, .ltoreq.3% Cu, balance Fe.

  6. Sputtered tin oxide and titanium oxide thin films as alternative transparent conductive oxides

    Energy Technology Data Exchange (ETDEWEB)

    Boltz, Janika

    2011-12-12

    Alternative transparent conductive oxides to tin doped indium oxide have been investigated. In this work, antimony doped tin oxide and niobium doped titanium oxide have been studied with the aim to prepare transparent and conductive films. Antimony doped tin oxide and niobium doped titanium oxide belong to different groups of oxides; tin oxide is a soft oxide, while titanium oxide is a hard oxide. Both oxides are isolating materials, in case the stoichiometry is SnO{sub 2} and TiO{sub 2}. In order to achieve transparent and conductive films free carriers have to be generated by oxygen vacancies, by metal ions at interstitial positions in the crystal lattice or by cation doping with Sb or Nb, respectively. Antimony doped tin oxide and niobium doped titanium oxide films have been prepared by reactive direct current magnetron sputtering (dc MS) from metallic targets. The process parameters and the doping concentration in the films have been varied. The films have been electrically, optically and structurally analysed in order to analyse the influence of the process parameters and the doping concentration on the film properties. Post-deposition treatments of the films have been performed in order to improve the film properties. For the deposition of transparent and conductive tin oxide, the dominant parameter during the deposition is the oxygen content in the sputtering gas. The Sb incorporation as doping atoms has a minor influence on the electrical, optical and structural properties. Within a narrow oxygen content in the sputtering gas highly transparent and conductive tin oxide films have been prepared. In this study, the lowest resistivity in the as deposited state is 2.9 m{omega} cm for undoped tin oxide without any postdeposition treatment. The minimum resistivity is related to a transition to crystalline films with the stoichiometry of SnO{sub 2}. At higher oxygen content the films turn out to have a higher resistivity due to an oxygen excess. After post

  7. Control of the electrical conductivity of composites of antimony doped tin oxide (ATO) nanoparticles and acrylate by grafting of 3-methacryloxpropyltrimethoxysilane (MPS)

    NARCIS (Netherlands)

    Posthumus, W.; Laven, J.; With, de G.; Linde, van der R.

    2006-01-01

    The effect of the addition of antimony doped tin oxide (ATO) nanoparticles on the electrical conductivity of acrylate films is described. To enable dispersing of ATO in acrylate matrices, 3-methacryloxypropyltrimethoxysilane (MPS) was grafted on the surface of the filler. The amount of MPS used for

  8. Relationship between electronic structure and electric conductivity of double rhodium oxides from X-ray spectral data

    International Nuclear Information System (INIS)

    Firsov, M.N.; Nefedov, V.I.; Shaplygin, I.S.

    1983-01-01

    Quantum yield spectra of X-ray photoemission of O K - and Rh M 3 -bands of double rhodium oxides with Be, Mg, Ca, Sr, Ba, Cd, V, Nb, Ta, Mo, W are obtained. Quantum yield spectra are analogous to absorption spectra and reflect vacant states in a crystal, in particular, the quantum yield spectrum of O K-band is associated with oxygen vacant states of p-symmetry while Rh M 3 -band spectrum with rhomium vacant states of d-symmetry. In all rhodium compounds investigated the first vacant band is formed by the rhodium 4d-states. The forbidden zone between the last occupied and first free states of rhodiUm has a small width (eV fractions), which explains the semiconductor character of electric conductivity of the investigated compounds. Electric resistance variation in investigated series of rhodium compounds is in agreement with peculiarities of their electronic structure and entirely depends on variation in the electron density on rhodium atoms

  9. Electrical instability of InGaZnO thin-film transistors with and without titanium sub-oxide layer under light illumination

    Science.gov (United States)

    Chiu, Y. C.; Zheng, Z. W.; Cheng, C. H.; Chen, P. C.; Yen, S. S.; Fan, C. C.; Hsu, H. H.; Kao, H. L.; Chang, C. Y.

    2017-03-01

    The electrical instability behaviors of amorphous indium-gallium-zinc oxide thin-film transistors with and without titanium sub-oxide passivation layer were investigated under light illumination in this study. For the unpassivated IGZO TFT device, in contrast with the dark case, a noticeable increase of the sub-threshold swing was observed when under the illumination environment, which can be attributed to the generation of ionized oxygen vacancies within the α-IGZO active layer by high energy photons. For the passivated TFT device, the much smaller SS of 70 mV/dec and high device mobility of >100 cm2/Vs at a drive voltage of 3 V with negligible degradation under light illumination are achieved due to the passivation effect of n-type titanium sub-oxide semiconductor, which may create potential application for high-performance display.

  10. Oxidation of ultra low carbon and silicon bearing steels

    Energy Technology Data Exchange (ETDEWEB)

    Suarez, Lucia [CTM - Technologic Centre, Materials Technology Area, Manresa, Barcelona (Spain)], E-mail: lucia.suarez@ctm.com.es; Rodriguez-Calvillo, Pablo [CTM - Technologic Centre, Materials Technology Area, Manresa, Barcelona (Spain)], E-mail: pablo.rodriguez@ctm.com.es; Houbaert, Yvan [Department of Materials Science and Engineering, University of Ghent (Belgium)], E-mail: Yvan.Houbaert@UGent.be; Colas, Rafael [Facultad de Ingenieria Mecanica y Electrica, Universidad Autonoma de Nuevo Leon (Mexico)], E-mail: rcolas@mail.uanl.mx

    2010-06-15

    Oxidation tests were carried out in samples from an ultra low carbon and two silicon bearing steels to determine the distribution and morphology of the oxide species present. The ultra low carbon steel was oxidized for short periods of time within a chamber designed to obtain thin oxide layers by controlling the atmosphere, and for longer times in an electric furnace; the silicon steels were reheated only in the electric furnace. The chamber was constructed to study the behaviour encountered during the short period of time between descaling and rolling in modern continuous mills. It was found that the oxide layers formed on the samples reheated in the electric furnace were made of different oxide species. The specimens treated in the chamber had layers made almost exclusively of wustite. Selected oxide samples were studied by scanning electron microscopy to obtain electron backscattered diffraction patterns, which were used to identify the oxide species in the layer.

  11. Role of KATP channels in cephalic vasodilatation induced by calcitonin gene-related peptide, nitric oxide, and transcranial electrical stimulation in the rat

    DEFF Research Database (Denmark)

    Gozalov, Aydin; Jansen-Olesen, Inger; Klærke, Dan Arne

    2008-01-01

    OBJECTIVE: The objective of this study was to explore the role of K(ATP) channels in vasodilatation induced by calcitonin gene-related peptide (CGRP), nitric oxide (NO), and transcranial electrical stimulation (TES) in intracranial arteries of rat. BACKGROUND: Dilatation of cerebral and dural...... CGRP, NO, and endogenous CGRP after electrical stimulation. Also diameter changes of pial arteries, mean arterial blood pressure and local cerebral blood flow by Laser Doppler flowmetry (LCBF(Flux)) were measured. RESULTS: CGRP, NO, and TES caused dilatation of the 2 arteries in vivo and in vitro...

  12. Effect of Zinc Oxide Doping on Electroluminescence and Electrical Behavior of Metalloporphyrins-Doped Samarium Complex

    Science.gov (United States)

    Janghouri, Mohammad; Amini, Mostafa M.

    2018-02-01

    Samarium complex [(Sm(III)] as a new host material was used for preparation of red organic light-emitting diodes (OLEDs). Devices with configurations of indium-doped tin oxide (ITO)/poly(3,4-ethylenedioxythiophene):(poly(styrenesulfonate) (PEDOT:PSS (50 nm)/polyvinyl carbazole (PVK):[zinc oxide (ZnO)] (50 nm)/[(Sm(III)]:[zinc(II) 2,3-tetrakis(dihydroxyphenyl)-porphyrin and Pt(II) 2,3-dimethoxyporphyrin] (60 nm)/2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline (BCP) (15 nm)/Al (150 nm) have been fabricated and investigated. An electroplex occurring at the (PVK/Sm: Pt(II) 2,3-dimethoxyporphyrin) interface has been suggested when ZnO nanoparticles were doped in PVK. OLED studies have revealed that the photophysical characteristics and electrical behavior of devices with ZnO nanoparticles are much better than those of devices with pure PVK. The efficiency of devices based on [(Sm(III)] was superior than that of known aluminum tris(8-hydroxyquinoline) (Alq3) and also our earlier reports on red OLEDs under the same conditions.

  13. Electric and magnetic properties of oxidic titanium bronzes of rare earths Lnsub(2/3+x)TiOsub(3+-y) with perovskite structure

    International Nuclear Information System (INIS)

    Bazuev, G.V.; Makarova, O.V.; Shvejkin, G.P.

    1983-01-01

    A study was made on electric and magnetic properties of oxidic titanium bronzes of rare earths and their dependence on rare earth nature and the degree of rare earth sublattice filling was followed. Data on Lnsub(2/3)TiOsub(3-y) (Ln-Ce, Nd) anion-deficient perovskites are given as well. Investigated Cesub(2/3)TiOsub(2.985) and Ndsub(2/3)TiOsub(2.875) phases as well as defectless with respect to oxygen Lnsub(2/3)TiOsub(3) phases have rhombic structure of perovskite type with ordered position of Ln 3 + cations and vacancies. Specific electric resistance and thermoelectromotive force factor were determined in vacuum at 290-1173 K for samples in the form of parallelepiped of 3x5x25 mm 3 size. Magnetic susceptibility chi was determined at 77-300 K by Faraday method using a device based on magnetic balancewith electromagnetic compensation. Relative error during chi measuring didn't exceed +-2%. Collectivized behaviour of d-electrons of Ti 3 + cations in oxidic titanium bronzes of rare earths: Lnsub(2/3+x)TiOsub(3+-y) (Ln-La, Ce, Nd; 0 < x < 1/3), conditioned by formation of narrow, partly filled π*-zone, was established on the basis of measuring specific electric resistance and magnetic susceptibility

  14. Roles, and establishment, maintenance and erasing of the ...

    Indian Academy of Sciences (India)

    Heritable information in plants consists of genomic information in DNA sequence and ... methylation pattern acquired in response to abiotic or biotic stress is often ...... or oxidative including the. GPDL gene for. C hoi and. S ano. (. 2007. ) stress.

  15. Magnetron sputtered Hf-B-Si-C-N films with controlled electrical conductivity and optical transparency, and with ultrahigh oxidation resistance

    Czech Academy of Sciences Publication Activity Database

    Šímová, V.; Vlček, J.; Zuzjaková, Š.; Houška, J.; Shen, Y.; Jiang, J. C.; Meletis, E. I.; Peřina, Vratislav

    2018-01-01

    Roč. 653, č. 5 (2018), s. 333-340 ISSN 0040-6090 R&D Projects: GA MŠk LM2015056 Institutional support: RVO:61389005 Keywords : Hf-B-Si-C-N films * pulsed reactive magnetron sputtering * electrical conductivitiy * optical transparency * high-temperature oxidation resistance Subject RIV: BG - Nuclear, Atomic and Molecular Physics, Colliders OBOR OECD: Nuclear physics Impact factor: 1.879, year: 2016

  16. Electrically conductive aluminum oxide thin film used as cobalt catalyst-support layer in vertically aligned carbon nanotube growth

    International Nuclear Information System (INIS)

    Azam, Mohd Asyadi; Ismail, Syahriza; Mohamad, Noraiham; Isomura, Kazuki; Shimoda, Tatsuya

    2015-01-01

    This paper will present the unique characteristics of aluminum oxide (Al–O) and cobalt catalyst included in aligned carbon nanotube (CNT) electrode system of energy storage device, namely electrochemical capacitor. Electrical conductivity and nanostructure of the thermally oxidized Al–O used as catalyst-support layer in vertically grown single-walled CNTs were studied. Al–O films were characterized by means of current–voltage measurement and high resolution transmission electron microscopy analysis. The Al–O support layer was found to be conductive, with a relatively low resistance and, approximately 20 nm film thickness of Al–O is suggested to be too thin to form insulating barrier. The scanning TEM—annular dark field analysis confirmed that the nanosized cobalt catalyst particles distributed on Al–O surfaces and also embedded inside the Al–O film structure. (paper)

  17. Bleeding Efficiency, Microbiological Quality and Oxidative Stability of Meat from Goats Subjected to Slaughter without Stunning in Comparison with Different Methods of Pre-Slaughter Electrical Stunning

    Science.gov (United States)

    Sabow, Azad Behnan; Zulkifli, Idrus; Goh, Yong Meng; Ab Kadir, Mohd Zainal Abidin; Kaka, Ubedullah; Imlan, Jurhamid Columbres; Abubakar, Ahmed Abubakar; Adeyemi, Kazeem Dauda; Sazili, Awis Qurni

    2016-01-01

    The influence of pre-slaughter electrical stunning techniques and slaughter without stunning on bleeding efficiency and shelf life of chevon during a 14 d postmortem aging were assessed. Thirty two Boer crossbred bucks were randomly assigned to four slaughtering techniques viz slaughter without stunning (SWS), low frequency head-only electrical stunning (LFHO; 1 A for 3 s at a frequency of 50 Hz), low frequency head-to-back electrical stunning (LFHB; 1 A for 3 s at a frequency of 50 Hz) and high frequency head-to-back electrical stunning (HFHB; 1 A for 3 s at a frequency of 850 Hz). The SWS, LFHO and HFHB goats had higher (p<0.05) blood loss and lower residual hemoglobin in muscle compared to LFHB. The LFHB meat had higher (p<0.05) TBARS value than other treatments on d 7 and 14 d postmortem. Slaughtering methods had no effect on protein oxidation. Higher bacterial counts were observed in LFHB meat compared to those from SWS, LFHO and HFHB after 3 d postmortem. Results indicate that the low bleed-out in LFHB lowered the lipid oxidative stability and microbiological quality of chevon during aging. PMID:27035716

  18. Metal-insulator transition in tin doped indium oxide (ITO) thin films: Quantum correction to the electrical conductivity

    OpenAIRE

    Deepak Kumar Kaushik; K. Uday Kumar; A. Subrahmanyam

    2017-01-01

    Tin doped indium oxide (ITO) thin films are being used extensively as transparent conductors in several applications. In the present communication, we report the electrical transport in DC magnetron sputtered ITO thin films (prepared at 300 K and subsequently annealed at 673 K in vacuum for 60 minutes) in low temperatures (25-300 K). The low temperature Hall effect and resistivity measurements reveal that the ITO thin films are moderately dis-ordered (kFl∼1; kF is the Fermi wave vector and l ...

  19. Defect Chemistry and Electrical Conductivity of Sm-Doped La1-xSrxCoO3-δ for Solid Oxide Fuel Cells

    DEFF Research Database (Denmark)

    Björketun, Mårten; Castelli, Ivano Eligio; Rossmeisl, Jan

    2017-01-01

    We have calculated the electrical conductivity of the solid oxide fuel cell (SOFC) cathode contact material La1-xSrxCoO3-δ at 900 K. Experimental trends in conductivity against x, and against δ for fixed x, are correctly reproduced for x ≲ 0.8. Furthermore, we have studied the chemistry of neutral...

  20. Low-temperature thermal reduction of graphene oxide: In situ correlative structural, thermal desorption, and electrical transport measurements

    Science.gov (United States)

    Lipatov, Alexey; Guinel, Maxime J.-F.; Muratov, Dmitry S.; Vanyushin, Vladislav O.; Wilson, Peter M.; Kolmakov, Andrei; Sinitskii, Alexander

    2018-01-01

    Elucidation of the structural transformations in graphene oxide (GO) upon reduction remains an active and important area of research. We report the results of in situ heating experiments, during which electrical, mass spectrometry, X-ray photoelectron spectroscopy (XPS), Raman spectroscopy, and transmission electron microscopy (TEM) measurements were carried out correlatively. The simultaneous electrical and temperature programmed desorption measurements allowed us to correlate the onset of the increase in the electrical conductivity of GO by five orders of magnitude at about 150 °C with the maxima of the rates of desorption of H2O, CO, and CO2. Interestingly, this large conductivity change happens at an intermediate level of the reduction of GO, which likely corresponds to the point when the graphitic domains become large enough to enable percolative electronic transport. We demonstrate that the gas desorption is intimately related to (i) the changes in the chemical structure of GO detected by XPS and Raman spectroscopy and (ii) the formation of nanoscopic holes in GO sheets revealed by TEM. These in situ observations provide a better understanding of the mechanism of the GO thermal reduction.

  1. Electrically conductive material

    Science.gov (United States)

    Singh, J.P.; Bosak, A.L.; McPheeters, C.C.; Dees, D.W.

    1993-09-07

    An electrically conductive material is described for use in solid oxide fuel cells, electrochemical sensors for combustion exhaust, and various other applications possesses increased fracture toughness over available materials, while affording the same electrical conductivity. One embodiment of the sintered electrically conductive material consists essentially of cubic ZrO[sub 2] as a matrix and 6-19 wt. % monoclinic ZrO[sub 2] formed from particles having an average size equal to or greater than about 0.23 microns. Another embodiment of the electrically conductive material consists essentially at cubic ZrO[sub 2] as a matrix and 10-30 wt. % partially stabilized zirconia (PSZ) formed from particles having an average size of approximately 3 microns. 8 figures.

  2. Electrical conductivity of metal powders under pressure

    Science.gov (United States)

    Montes, J. M.; Cuevas, F. G.; Cintas, J.; Urban, P.

    2011-12-01

    A model for calculating the electrical conductivity of a compressed powder mass consisting of oxide-coated metal particles has been derived. A theoretical tool previously developed by the authors, the so-called `equivalent simple cubic system', was used in the model deduction. This tool is based on relating the actual powder system to an equivalent one consisting of deforming spheres packed in a simple cubic lattice, which is much easier to examine. The proposed model relates the effective electrical conductivity of the powder mass under compression to its level of porosity. Other physically measurable parameters in the model are the conductivities of the metal and oxide constituting the powder particles, their radii, the mean thickness of the oxide layer and the tap porosity of the powder. Two additional parameters controlling the effect of the descaling of the particle oxide layer were empirically introduced. The proposed model was experimentally verified by measurements of the electrical conductivity of aluminium, bronze, iron, nickel and titanium powders under pressure. The consistency between theoretical predictions and experimental results was reasonably good in all cases.

  3. Electrical and optical properties of poly(3,4-ethylenedioxythiophene) oxidized with poly(4-styrenesulfonate) and AuCl3-doped reduced graphene oxide/single-walled carbon nanotube films for ultraviolet light-emitting diodes.

    Science.gov (United States)

    Lee, Byeong Ryong; Lee, Jae Hoon; Kim, Kyeong Heon; Kim, Hee-Dong; Kim, Tae Geun

    2014-12-01

    We report the effects of poly(3,4-ethylenedioxythiophene) oxidized with poly(4-styrenesulfonate) ( PSS) and gold chloride (AuCl) co-doping on the electrical and optical properties of reduced graphene oxide (RGO)/single-walled carbon nanotube (SWNT) films fabricated by dipcoating methods. The RGO/SWNT films were doped with both AuCl3 dissolved in nitromethane and PSS hole injection layers by spin coating to improve their electrical properties by increasing the work function of the RGO/SWNT films, thereby reducing the Schottky barrier height between the RGO/SWNT and p-GaN films. As a result, we obtained a reduced sheet resistance of 851.9 Ω/Ω and a contact resistance of 1.97 x 10(-1) Ω x cm2, together with a high transmittance of 84.1% at 380 nm. The contact resistance of these films should be further reduced to fully utilize the feature of the electrode scheme proposed in this work, but the current result suggests its potential use as a transparent conductive electrode for ultraviolet light-emitting diodes.

  4. Plasmachemical oxidation processes in a hybrid gas-liquid electrical discharge reactor

    Energy Technology Data Exchange (ETDEWEB)

    Lukes, Petr; Locke, Bruce R [Department of Chemical and Biomedical Engineering, FAMU-FSU College of Engineering, Florida State University, 2525 Pottsdamer Street, Tallahassee, Florida (United States)

    2005-11-21

    Oxidation processes induced in water by pulsed electrical discharges generated simultaneously in the gas phase in close proximity to the water surface and directly in the liquid were investigated in a hybrid series gas-liquid electrical discharge reactor. The mechanism of phenol degradation was studied through its dependence on the gas phase and liquid phase compositions using pure argon and oxygen atmospheres above the liquid and different initial pH values in the aqueous solution. Phenol degradation was significantly enhanced in the hybrid-series reactor compared with the phenol removal by the single-liquid phase discharge reactor. Under an argon atmosphere the mechanism of phenol degradation was mainly caused by the electrophilic attack of OH{center_dot} radicals produced by the liquid phase discharge directly in water and OH{center_dot} radicals produced by the gas phase discharge at the gas-liquid interface. Under an oxygen atmosphere the formation of gaseous ozone dominated over the formation of OH{center_dot} radicals, and the contribution of the gas phase discharge in this case was determined mainly by the dissolution of gaseous ozone into the water and its subsequent interaction with phenol. At high pH phenol was degraded, in addition to the direct attack by ozone, also through indirect reactions of OH{center_dot} radicals formed via a peroxone process by the decomposition of dissolved ozone by hydrogen peroxide produced by the liquid phase discharge. Such a mechanism was proved by the detection of cis,cis-muconic acid and pH-dependent degradation of phenol, which resulted in significantly higher removal of phenol from alkaline solution observed under oxygen atmosphere than in argon.

  5. Plasmachemical oxidation processes in a hybrid gas-liquid electrical discharge reactor

    International Nuclear Information System (INIS)

    Lukes, Petr; Locke, Bruce R

    2005-01-01

    Oxidation processes induced in water by pulsed electrical discharges generated simultaneously in the gas phase in close proximity to the water surface and directly in the liquid were investigated in a hybrid series gas-liquid electrical discharge reactor. The mechanism of phenol degradation was studied through its dependence on the gas phase and liquid phase compositions using pure argon and oxygen atmospheres above the liquid and different initial pH values in the aqueous solution. Phenol degradation was significantly enhanced in the hybrid-series reactor compared with the phenol removal by the single-liquid phase discharge reactor. Under an argon atmosphere the mechanism of phenol degradation was mainly caused by the electrophilic attack of OH· radicals produced by the liquid phase discharge directly in water and OH· radicals produced by the gas phase discharge at the gas-liquid interface. Under an oxygen atmosphere the formation of gaseous ozone dominated over the formation of OH· radicals, and the contribution of the gas phase discharge in this case was determined mainly by the dissolution of gaseous ozone into the water and its subsequent interaction with phenol. At high pH phenol was degraded, in addition to the direct attack by ozone, also through indirect reactions of OH· radicals formed via a peroxone process by the decomposition of dissolved ozone by hydrogen peroxide produced by the liquid phase discharge. Such a mechanism was proved by the detection of cis,cis-muconic acid and pH-dependent degradation of phenol, which resulted in significantly higher removal of phenol from alkaline solution observed under oxygen atmosphere than in argon

  6. Characteristics of Superjunction Lateral-Double-Diffusion Metal Oxide Semiconductor Field Effect Transistor and Degradation after Electrical Stress

    Science.gov (United States)

    Lin, Jyh‑Ling; Lin, Ming‑Jang; Lin, Li‑Jheng

    2006-04-01

    The superjunction lateral double diffusion metal oxide semiconductor field effect has recently received considerable attention. Introducing heavily doped p-type strips to the n-type drift region increases the horizontal depletion capability. Consequently, the doping concentration of the drift region is higher and the conduction resistance is lower than those of conventional lateral-double-diffusion metal oxide semiconductor field effect transistors (LDMOSFETs). These characteristics may increase breakdown voltage (\\mathit{BV}) and reduce specific on-resistance (Ron,sp). In this study, we focus on the electrical characteristics of conventional LDMOSFETs on silicon bulk, silicon-on-insulator (SOI) LDMOSFETs and superjunction LDMOSFETs after bias stress. Additionally, the \\mathit{BV} and Ron,sp of superjunction LDMOSFETs with different N/P drift region widths and different dosages are discussed. Simulation tools, including two-dimensional (2-D) TSPREM-4/MEDICI and three-dimensional (3-D) DAVINCI, were employed to determine the device characteristics.

  7. Effect of Target Density on Microstructural, Electrical, and Optical Properties of Indium Tin Oxide Thin Films

    Science.gov (United States)

    Zhu, Guisheng; Zhi, Li; Yang, Huijuan; Xu, Huarui; Yu, Aibing

    2012-09-01

    In this paper, indium tin oxide (ITO) targets with different densities were used to deposit ITO thin films. The thin films were deposited from these targets at room temperature and annealed at 750°C. Microstructural, electrical, and optical properties of the as-prepared films were studied. It was found that the target density had no effect on the properties or deposition rate of radiofrequency (RF)-sputtered ITO thin films, different from the findings for direct current (DC)-sputtered films. Therefore, when using RF sputtering, the target does not require a high density and may be reused.

  8. Atomically-resolved mapping of polarization and electric fields across ferroelectric-oxide interfaces by Z-contrast imaging

    Science.gov (United States)

    Borisevich, Albina; Chang, Hye Jung; Kalinin, Sergei; Morozovska, Anna; Chu, Ying-Hao; Yu, Pu; Ramesh, Ramamoorthy; Pennycook, Stephen

    2011-03-01

    Polarization, electric field, charge and potential across ferroelectric-oxide interfaces are obtained from direct atomic position mapping by aberration corrected scanning transmission electron microscopy combined with Ginsburg-Landau-Devonshire theory. We compare two antiparallel polarization orientations, which allows separation of the polarization and intrinsic interface charge contributions. Using the Born effective charges, the complete interface electrostatics is obtained in real space, providing an alternative method to holography. The results provide new microscopic insight into the thermodynamics of polarization distribution at the atomic level. Research is sponsored by the of Materials Sciences and Engineering Division, U.S. DOE.

  9. Electrorheology of graphene oxide.

    Science.gov (United States)

    Zhang, Wen Ling; Liu, Ying Dan; Choi, Hyoung Jin; Kim, Sang Guk

    2012-04-01

    Novel polarizable graphene oxide (GO) particles with oxidized groups on their edge and basal planes were prepared by a modified Hummers method, and their electro-responsive electrorheological (ER) characteristics when dispersed in silicone oil were examined with and without an electric field applied. The fibrillation phenomenon of this GO-based electro-responsive fluid was also observed via an optical microscope under an applied electric field. Both flow curves and dielectric spectra of the ER fluid were measured using a rotational rheometer and a LCR meter, respectively. Its viscoelastic properties of both storage and loss moduli were also examined using a vertical oscillation rheometer equipped with a high voltage generator, finding that the GO-based smart ER system behaves as a viscoelastic material under an applied electric field.

  10. An assessment of the impact of pulsed electric fields processing factors on oxidation, color, texture, and sensory attributes of turkey breast meat.

    Science.gov (United States)

    Arroyo, Cristina; Eslami, Sara; Brunton, Nigel P; Arimi, Joshua M; Noci, Francesco; Lyng, James G

    2015-05-01

    Pulsed electric fields (PEF) is a novel nonthermal technology that has the potential to cause physical disruption to muscle tissue which in turn could alter the sensorial aspects of meat in both a positive (e.g., enhanced tenderization) and a negative way (e.g., off-flavor development). If there is a risk of off-flavor development it should be identified prior to embarking on an extensive investigation on PEF in meat tenderization and turkey meat was chosen for this purpose as it is particularly prone to oxidation. The objective of this study was to investigate the effect of various PEF treatments on the quality attributes of turkey breast meat. Turkey breast meat obtained 1 d postslaughter was treated in a batch PEF chamber with increasing electric field strength up to 3 kV/cm and analyzed for lipid oxidation by thiobarbituric acid reactive substances assay (TBARS) with up to 5 d storage at 4°C in aerobic conditions. In a separate experiment, turkey breast meat samples were exposed to PEF under various combinations of pulse number, frequency, and voltage. Following PEF treatments weight loss, cook loss, lipid oxidation, texture, and color were assessed by instrumental methods. A sensory analysis was also performed to determine consumer acceptability for color, texture, and odor of the samples. Lipid oxidation in all PEF-treated samples progressed at the same rate with storage as the untreated samples and was not found to be significantly different to the control. Under the conditions examined PEF treatments did not induce differences in instrumentally measured weight loss, cook loss, lipid oxidation, texture, and color (raw and cooked) either on fresh or frozen samples. However, the sensory evaluation suggested that panelists could detect slight differences between the PEF-treated samples and the controls in terms of texture and odor. © 2015 Poultry Science Association Inc.

  11. Magnetic ordering and electrical resistivity in Co0.2Zn0.8Fe2O4 spinel oxide

    International Nuclear Information System (INIS)

    Bhowmik, R.N.; Ranganathan, R.; Ghosh, B.; Kumar, S.; Chattopadhyay, S.

    2008-01-01

    We report the magnetic, Moessbauer spectroscopy and resistivity measurements in order to understand the electronic behaviour of bulk Co 0.2 Zn 0.8 Fe 2 O 4 spinel oxide. The effect of magnetic order on electrical behaviour is observed from the resistivity measurements in the absence and presence of magnetic field. The analysis of Moessbauer spectra suggests the absence of Fe 2+ ions in the system, which implies that complete hopping of charge carriers between localized Fe 3+ /Co 2+ and Fe 2+ /Co 3+ pair of ions in B sublattice is not the favourable mechanism in Co 0.2 Zn 0.8 Fe 2 O 4 . We suggest that electrical behaviour of the present sample may be consistent with a model of fractional charge transfer via Fe B 3+ -O 2- -Co B 2+ superexchange path

  12. Optical and Electrical Properties of Copper Oxide Thin Films Synthesized by Spray Pyrolysis Technique

    Directory of Open Access Journals (Sweden)

    S. S. Roy

    2015-08-01

    Full Text Available Copper oxide (CuO thin films have been synthesized on to glass substrates at different temperatures in the range 250-450 °C by spray pyrolysis technique from aqueous solution using cupric acetate Cu(CH3COO2·H2O as a precursor. The structure of the deposited CuO thin films characterized by X-ray diffraction, the surface morphology was observed by a scanning electron microscope, the presence of elements was detected by energy dispersive X-ray analysis, the optical transmission spectra was recorded by ultraviolet-visible spectroscopy and electrical resistivity was studied by Van-der Pauw method. All the CuO thin films, irrespective of growth temperature, showed a monoclinic structure with the main CuO (111 orientation, and the crystallite size was about 8.4784 Å for the thin film synthesized at 350 °C. The optical transmission of the as-deposited film is found to decrease with the increase of substrate temperature, the optical band gap of the thin films varies from 1.90 to 1.60 eV and the room temperature electrical resistivity varies from 30 to18 Ohm·cm for the films grown at different substrate temperatures.

  13. Low-temperature aluminum reduction of graphene oxide, electrical properties, surface wettability, and energy storage applications.

    Science.gov (United States)

    Wan, Dongyun; Yang, Chongyin; Lin, Tianquan; Tang, Yufeng; Zhou, Mi; Zhong, Yajuan; Huang, Fuqiang; Lin, Jianhua

    2012-10-23

    Low-temperature aluminum (Al) reduction is first introduced to reduce graphene oxide (GO) at 100-200 °C in a two-zone furnace. The melted Al metal exhibits an excellent deoxygen ability to produce well-crystallized reduced graphene oxide (RGO) papers with a low O/C ratio of 0.058 (Al-RGO), compared with 0.201 in the thermally reduced one (T-RGO). The Al-RGO papers possess outstanding mechanical flexibility and extremely high electrical conductivities (sheet resistance R(s) ~ 1.75 Ω/sq), compared with 20.12 Ω/sq of T-RGO. More interestingly, very nice hydrophobic nature (90.5°) was observed, significantly superior to the reported chemically or thermally reduced papers. These enhanced properties are attributed to the low oxygen content in the RGO papers. During the aluminum reduction, highly active H atoms from H(2)O reacted with melted Al promise an efficient oxygen removal. This method was also applicable to reduce graphene oxide foams, which were used in the GO/SA (stearic acid) composite as a highly thermally conductive reservoir to hold the phase change material for thermal energy storage. The Al-reduced RGO/SnS(2) composites were further used in an anode material of lithium ion batteries possessing a higher specific capacity. Overall, low-temperature Al reduction is an effective method to prepare highly conductive RGO papers and related composites for flexible energy conversion and storage device applications.

  14. Analysis of current-voltage characteristics of Au/pentacene/fluorine polymer/indium zinc oxide diodes by electric-field-induced optical second-harmonic generation

    Energy Technology Data Exchange (ETDEWEB)

    Nishi, Shohei; Taguchi, Dai; Manaka, Takaaki; Iwamoto, Mitsumasa, E-mail: iwamoto@pe.titech.ac.jp [Department of Physical Electronics, Tokyo Institute of Technology, 2-12-1 S3-33, O-okayama, Meguro-ku, Tokyo 152-8552 (Japan)

    2015-06-28

    By using electric-field-induced optical second-harmonic generation measurement coupled with the conventional current-voltage (I-V) measurement, we studied the carrier transport of organic double-layer diodes with a Au/pentacene/fluorine polymer (FP)/indium zinc oxide (IZO) structure. The rectifying I-V characteristics were converted into the I-E characteristics of the FP and pentacene layers. Results suggest a model in which Schottky-type electron injection from the IZO electrode to the FP layer governs the forward electrical conduction (V > 0), where the space charge electric field produced in the FP layer by accumulated holes at the pentacene/FP interface makes a significant contribution. On the other hand, Schottky-type injection by accumulated interface electrons from the pentacene layer to the FP layer governs the backward electrical conduction (V < 0). The electroluminescence generated from the pentacene layer in the region V > 0 verifies the electron transport across the FP layer, and supports the above suggested model.

  15. Analysis of current-voltage characteristics of Au/pentacene/fluorine polymer/indium zinc oxide diodes by electric-field-induced optical second-harmonic generation

    International Nuclear Information System (INIS)

    Nishi, Shohei; Taguchi, Dai; Manaka, Takaaki; Iwamoto, Mitsumasa

    2015-01-01

    By using electric-field-induced optical second-harmonic generation measurement coupled with the conventional current-voltage (I-V) measurement, we studied the carrier transport of organic double-layer diodes with a Au/pentacene/fluorine polymer (FP)/indium zinc oxide (IZO) structure. The rectifying I-V characteristics were converted into the I-E characteristics of the FP and pentacene layers. Results suggest a model in which Schottky-type electron injection from the IZO electrode to the FP layer governs the forward electrical conduction (V > 0), where the space charge electric field produced in the FP layer by accumulated holes at the pentacene/FP interface makes a significant contribution. On the other hand, Schottky-type injection by accumulated interface electrons from the pentacene layer to the FP layer governs the backward electrical conduction (V < 0). The electroluminescence generated from the pentacene layer in the region V > 0 verifies the electron transport across the FP layer, and supports the above suggested model

  16. Free volume dependence on electrical properties of Poly (styrene co-acrylonitrile)/Nickel oxide polymer nanocomposites

    Science.gov (United States)

    Ningaraju, S.; Hegde, Vinayakaprasanna N.; Prakash, A. P. Gnana; Ravikumar, H. B.

    2018-04-01

    Polymer nanocomposites of Poly (styrene co-acrylonitrile)/Nickel Oxide (PSAN/NiO) have been prepared. The increased free volume sizes up to 0.4 wt% of NiO loading indicates overall reduction in packing density of polymer network. The decreased o-Ps lifetime (τ3) at higher concentration of NiO indicates improved interfacial interaction between the surface of NiO nanoparticles and side chain of PSAN polymer matrix. The increased AC/DC conductivity at lower wt% of NiO loading demonstrates increased number of electric charge carriers/mobile ions and their mobility. The increased dielectric constant and dielectric loss up to 0.4 wt% of NiO loading suggests the increased dipoles polarization.

  17. Electrical properties of aluminum-doped zinc oxide (AZO) nanoparticles synthesized by chemical vapor synthesis

    International Nuclear Information System (INIS)

    Hartner, Sonja; Schulz, Christof; Wiggers, Hartmut; Ali, Moazzam; Winterer, Markus

    2009-01-01

    Aluminum-doped zinc oxide nanoparticles have been prepared by chemical vapor synthesis, which facilitates the incorporation of a higher percentage of dopant atoms, far above the thermodynamic solubility limit of aluminum. The electrical properties of aluminum-doped and undoped zinc oxide nanoparticles were investigated by impedance spectroscopy. The impedance is measured under hydrogen and synthetic air between 323 and 673 K. The measurements under hydrogen as well as under synthetic air show transport properties depending on temperature and doping level. Under hydrogen atmosphere, a decreasing conductivity with increasing dopant content is observed, which can be explained by enhanced scattering processes due to an increasing disorder in the nanocrystalline material. The temperature coefficient for the doped samples switches from positive temperature coefficient behavior to negative temperature coefficient behavior with increasing dopant concentration. In the presence of synthetic air, the conductivity firstly increases with increasing dopant content by six orders of magnitude. The origin of the increasing conductivity is the generation of free charge carriers upon dopant incorporation. It reaches its maximum at a concentration of 7.7% of aluminum, and drops for higher doping levels. In all cases, the conductivity under hydrogen is higher than under synthetic air and can be changed reversibly by changing the atmosphere.

  18. Electrical properties of aluminum-doped zinc oxide (AZO) nanoparticles synthesized by chemical vapor synthesis.

    Science.gov (United States)

    Hartner, Sonja; Ali, Moazzam; Schulz, Christof; Winterer, Markus; Wiggers, Hartmut

    2009-11-04

    Aluminum-doped zinc oxide nanoparticles have been prepared by chemical vapor synthesis, which facilitates the incorporation of a higher percentage of dopant atoms, far above the thermodynamic solubility limit of aluminum. The electrical properties of aluminum-doped and undoped zinc oxide nanoparticles were investigated by impedance spectroscopy. The impedance is measured under hydrogen and synthetic air between 323 and 673 K. The measurements under hydrogen as well as under synthetic air show transport properties depending on temperature and doping level. Under hydrogen atmosphere, a decreasing conductivity with increasing dopant content is observed, which can be explained by enhanced scattering processes due to an increasing disorder in the nanocrystalline material. The temperature coefficient for the doped samples switches from positive temperature coefficient behavior to negative temperature coefficient behavior with increasing dopant concentration. In the presence of synthetic air, the conductivity firstly increases with increasing dopant content by six orders of magnitude. The origin of the increasing conductivity is the generation of free charge carriers upon dopant incorporation. It reaches its maximum at a concentration of 7.7% of aluminum, and drops for higher doping levels. In all cases, the conductivity under hydrogen is higher than under synthetic air and can be changed reversibly by changing the atmosphere.

  19. Electric and magnetic properties of oxidic titanium bronzes of rare earths Lnsub(2/3+x)TiOsub(3+-y) with perovskite structure

    Energy Technology Data Exchange (ETDEWEB)

    Bazuev, G V; Makarova, O V; Shvejkin, G P [AN SSSR, Sverdlovsk. Inst. Khimii

    1983-01-01

    A study was made on electric and magnetic properties of oxidic titanium bronzes of rare earths and their dependence on rare earth nature and the degree of rare earth sublattice filling was followed. Data on Lnsub(2/3)TiOsub(3-y) (Ln-Ce, Nd) anion-deficient perovskites are given as well. Investigated Cesub(2/3)TiOsub(2.985) and Ndsub(2/3)TiOsub(2.875) phases as well as defectless with respect to oxygen Lnsub(2/3)TiOsub(3) phases have rhombic structure of perovskite type with ordered position of Ln/sup 3 +/ cations and vacancies. Specific electric resistance and thermoelectromotive force factor were determined in vacuum at 290-1173 K for samples in the form of parallelepiped of 3x5x25 mm/sup 3/ size. Magnetic susceptibility chi was determined at 77-300 K by Faraday method using a device based on magnetic balance with electromagnetic compensation. Relative error during chi measuring didn't exceed +-2%. Collectivized behaviour of d-electrons of Ti/sup 3 +/ cations in oxidic titanium bronzes of rare earths: Lnsub(2/3+x)TiOsub(3+-y) (Ln-La, Ce, Nd; 0 < x < 1/3), conditioned by formation of narrow, partly filled ..pi..*-zone, was established on the basis of measuring specific electric resistance and magnetic susceptibility.

  20. Marginal abatement cost curve for nitrogen oxides incorporating controls, renewable electricity, energy efficiency, and fuel switching.

    Science.gov (United States)

    Loughlin, Daniel H; Macpherson, Alexander J; Kaufman, Katherine R; Keaveny, Brian N

    2017-10-01

    A marginal abatement cost curve (MACC) traces out the relationship between the quantity of pollution abated and the marginal cost of abating each additional unit. In the context of air quality management, MACCs are typically developed by sorting control technologies by their relative cost-effectiveness. Other potentially important abatement measures such as renewable electricity, energy efficiency, and fuel switching (RE/EE/FS) are often not incorporated into MACCs, as it is difficult to quantify their costs and abatement potential. In this paper, a U.S. energy system model is used to develop a MACC for nitrogen oxides (NO x ) that incorporates both traditional controls and these additional measures. The MACC is decomposed by sector, and the relative cost-effectiveness of RE/EE/FS and traditional controls are compared. RE/EE/FS are shown to have the potential to increase emission reductions beyond what is possible when applying traditional controls alone. Furthermore, a portion of RE/EE/FS appear to be cost-competitive with traditional controls. Renewable electricity, energy efficiency, and fuel switching can be cost-competitive with traditional air pollutant controls for abating air pollutant emissions. The application of renewable electricity, energy efficiency, and fuel switching is also shown to have the potential to increase emission reductions beyond what is possible when applying traditional controls alone.

  1. Oxidation behaviour and electrical properties of cobalt/cerium oxide composite coatings for solid oxide fuel cell interconnects

    DEFF Research Database (Denmark)

    Harthøj, Anders; Holt, Tobias; Møller, Per

    2015-01-01

    This work evaluates the performance of cobalt/cerium oxide (Co/CeO2) composite coatings and pure Co coatings to be used for solid oxide fuel cell (SOFC) interconnects. The coatings are electroplated on the ferritic stainless steels Crofer 22 APU and Crofer 22H. Coated and uncoated samples...

  2. Ferroelectricity in undoped hafnium oxide

    International Nuclear Information System (INIS)

    Polakowski, Patrick; Müller, Johannes

    2015-01-01

    We report the observation of ferroelectric characteristics in undoped hafnium oxide thin films in a thickness range of 4–20 nm. The undoped films were fabricated using atomic layer deposition (ALD) and embedded into titanium nitride based metal-insulator-metal (MIM) capacitors for electrical evaluation. Structural as well as electrical evidence for the appearance of a ferroelectric phase in pure hafnium oxide was collected with respect to film thickness and thermal budget applied during titanium nitride electrode formation. Using grazing incidence X-Ray diffraction (GIXRD) analysis, we observed an enhanced suppression of the monoclinic phase fraction in favor of an orthorhombic, potentially, ferroelectric phase with decreasing thickness/grain size and for a titanium nitride electrode formation below crystallization temperature. The electrical presence of ferroelectricity was confirmed using polarization measurements. A remanent polarization P r of up to 10 μC cm −2 as well as a read/write endurance of 1.6 × 10 5 cycles was measured for the pure oxide. The experimental results reported here strongly support the intrinsic nature of the ferroelectric phase in hafnium oxide and expand its applicability beyond the doped systems

  3. An electric detection of immunoglobulin G in the enzyme-linked immunosorbent assay using an indium oxide nanoparticle ion-sensitive field-effect transistor

    International Nuclear Information System (INIS)

    Lee, Dongjin; Cui, Tianhong

    2012-01-01

    Semiconducting nanoparticle ion-sensitive field-effect transistors (ISFETs) are used to detect immunoglobulin G (IgG) in the conventional enzyme-linked immunosorbent assay (ELISA). Indium oxide and silica nanoparticles were layer-by-layer self-assembled with the oppositely charged polyelectrolyte as the electrochemical transducer and antibody immobilization site, respectively. The assay was conducted on a novel platform of indium oxide nanoparticle ISFETs, where the electric signals are generated in response to the concentration of target IgG using the labeled detecting antibody. The sandwiched ELISA structure catalyzed the conversion of the acidic substrate into neutral substance with the aid of horseradish peroxidase. The pH change in the substrate solution was detected by nanoparticle ISFETs. Normal rabbit IgG was used as a model antigen whose detection limit of 0.04 ng ml −1 was found. The facile electric detection in the conventional assay through the semiconducting nanoparticle ISFET has potential applications as a point-of-care detection or a sensing element in a lab-on-a-chip system

  4. Electrical transport properties of manganese containing pyrochlore type semiconducting oxides using impedance analyses

    International Nuclear Information System (INIS)

    Sumi, S.; Prabhakar Rao, P.; Mahesh, S.K.; Koshy, Peter

    2012-01-01

    Graphical abstract: DC conductivity variation of CaCe 1−x Mn x SnNbO 7−δ (x = 0, 0.2, 0.4 and 0.6) with inverse of temperature. Variation of conductivity with Mn concentration at 600 °C is shown in the inset. Display Omitted Highlights: ► We have observed that the structural ordering as well as grain size increase with Mn substitution. ► Impedance analysis proved that a correlated barrier hopping type conduction mechanism is involved in the materials. ► Activation energy as well as electrical conductivity increases with increase in Mn substitution. ► Localization of electrons associated with Mn 2+ and structural ordering are the key factors for the increased activation energy with Mn substitution. ► All the materials showed good NTC thermistor properties. -- Abstract: A new series of manganese containing pyrochlore type semiconducting oxides CaCe 1−x Mn x SnNbO 7−δ (x = 0, 0.2, 0.4 and 0.6) have been synthesized to study the effect of Mn substitution on the structure, microstructure and electrical properties of these samples. X-ray diffraction and scanning electron microscopy studies revealed an increase of structural ordering and grain size respectively with increase of Mn substitution. Rietveld analysis and Raman spectroscopy were also employed to corroborate the XRD results. The bulk resistance measurements with temperature exhibit negative temperature coefficient behavior. The impedance analysis of the samples revealed a non-Debye type relaxation existed in the materials. The ac conductivity variation with temperature and frequency indicates a correlated barrier hopping type conduction mechanism in these materials. The barrier height and the intersite separation for hopping influence the electrical conductivity of these samples and are found to be a function of localization of electrons associated with the Mn 2+ ions and the unit cell volume respectively. The Mn substitution increases both electrical conductivity and activation energy

  5. Characterization of the physical and electrical properties of Indium tin oxide on polyethylene napthalate

    International Nuclear Information System (INIS)

    Han, H.; Adams, Daniel; Mayer, J.W.; Alford, T.L.

    2005-01-01

    Indium tin oxide (ITO) thin films, on polyethylene napthalate (PEN) of both good electrical and optical properties were obtained by radio-frequency sputtering. The optoelectronic properties of the ITO films on PEN substrate were evaluated in terms of the oxygen content and the surface morphology. Rutherford backscattering spectrometry analysis was used to determine the oxygen content in the film. Hall-effect measurements were used to evaluate the dependence of electrical properties on oxygen content. The results showed that the resistivity of the ITO film increases with increasing oxygen content. For an oxygen content of 1.6x10 18 -2.48x10 18 atoms/cm 2 , the resistivity varied from 0.38x10 -2 to 1.86x10 -2 Ω cm. Typical resistivities were about ∼10 -3 Ω cm. UV-Vis spectroscopy and atomic force microscopy measurements were used to determine the optical transmittance and surface roughness of ITO films, respectively. Optical transmittances of ∼85% were obtained for the ITO thin films. Our results revealed that substrate roughness were translated onto the deposited ITO thin layers. The ITO surface roughness influences both the optical and electrical properties of the thin films. For a 125 μm PEN substrate the roughness is 8.4 nm, whereas it is 3.2 nm for 200 μm substrate thicknesses. The optical band gap is about 3.15 eV for all ITO film and is influenced by the polymer substrate. A model is proposed that the optical transmittance in the visible region is governed by the carrier concentration in the ITO thin films

  6. Influence of air flow rate on structural and electrical properties of undoped indium oxide thin films

    International Nuclear Information System (INIS)

    Mirzapour, S.; Rozati, S.M.; Takwale, M.G.; Marathe, B.R.; Bhide, V.G.

    1993-01-01

    Using the spray pyrolysis technique thin films of indium oxide were prepared on Corning glass (7059) at a substrate temperature of 425 C at different flow rates. The electrical and structural properties of these films were studied. The Hall measurements at room temperature showed that the films prepared in an air flow rate of 7 litre min -1 have the highest mobility of 47 cm 2 V -1 s -1 and a minimum resistivity of 1.125 x 10 -3 Ω cm. The X-ray diffraction patterns showed that the films have a preferred orientation of [400] which peaks at the air flow rate of 7 litre min -1 . (orig.)

  7. Prediction of crack density and electrical resistance changes in indium tin oxide/polymer thin films under tensile loading

    KAUST Repository

    Mora Cordova, Angel

    2014-06-11

    We present unified predictions for the crack onset strain, evolution of crack density, and changes in electrical resistance in indium tin oxide/polymer thin films under tensile loading. We propose a damage mechanics model to quantify and predict such changes as an alternative to fracture mechanics formulations. Our predictions are obtained by assuming that there are no flaws at the onset of loading as opposed to the assumptions of fracture mechanics approaches. We calibrate the crack onset strain and the damage model based on experimental data reported in the literature. We predict crack density and changes in electrical resistance as a function of the damage induced in the films. We implement our model in the commercial finite element software ABAQUS using a user subroutine UMAT. We obtain fair to good agreement with experiments. © The Author(s) 2014 Reprints and permissions: sagepub.co.uk/journalsPermissions.nav.

  8. Electrical energy per order and current efficiency for electrochemical oxidation of p-chlorobenzoic acid with boron-doped diamond anode.

    Science.gov (United States)

    Lanzarini-Lopes, Mariana; Garcia-Segura, Sergi; Hristovski, Kiril; Westerhoff, Paul

    2017-12-01

    Electrochemical oxidation (EO) is an advanced oxidation process for water treatment to mineralize organic contaminants. While proven to degrade a range of emerging pollutants in water, less attention has been given to quantify the effect of operational variables such applied current density and pollutant concentration on efficiency and energy requirements. Particular figures of merit were mineralization current efficiency (MCE) and electrical energy per order (E EO ). Linear increases of applied current exponentially decreased the MCE due to the enhancement of undesired parasitic reactions that consumed generated hydroxyl radical. E EO values ranged from 39.3 to 331.8 kW h m -3 order -1 . Increasing the applied current also enhanced the E EO due to the transition from kinetics limited by current to kinetics limited by mass transfer. Further increases in current did not influence the removal rate, but it raised the E EO requirement. The E EO requirement diminished when decreasing initial pollutant loading with the increase of the apparent kinetic rate because of the relative availability of oxidant per pollutant molecule in solution at a defined current. Oxidation by-products released were identified, and a plausible degradative pathway has been suggested. Copyright © 2017. Published by Elsevier Ltd.

  9. Stable solar-driven oxidation of water by semiconducting photoanodes protected by transparent catalytic nickel oxide films

    KAUST Repository

    Sun, Ke; Saadi, Fadl H.; Lichterman, Michael F.; Hale, William G.; Wang, Hsinping; Zhou, Xinghao; Plymale, Noah T.; Omelchenko, Stefan T.; He, Jr-Hau; Papadantonakis, Kimberly M.; Brunschwig, Bruce S.; Lewis, Nathan S.

    2015-01-01

    Reactively sputtered nickel oxide (NiOx) films provide transparent, antireflective, electrically conductive, chemically stable coatings that also are highly active electrocatalysts for the oxidation of water to O2(g). These NiOx coatings provide

  10. Polarization-coupled tunable resistive behavior in oxide ferroelectric heterostructures

    Energy Technology Data Exchange (ETDEWEB)

    Gruverman, Alexei [Univ. of Nebraska, Lincoln, NE (United States); Tsymbal, Evgeny Y. [Univ. of Nebraska, Lincoln, NE (United States); Eom, Chang-Beom [Univ. of Wisconsin, Madison, WI (United States)

    2017-05-03

    This research focuses on investigation of the physical mechanism of the electrically and mechanically tunable resistive behavior in oxide ferroelectric heterostructures with engineered interfaces realized via a strong coupling of ferroelectric polarization with tunneling electroresistance and metal-insulator (M-I) transitions. This report describes observation of electrically conductive domain walls in semiconducting ferroelectrics, voltage-free control of resistive switching and demonstration of a new mechanism of electrical control of 2D electron gas (2DEG) at oxide interfaces. The research goals are achieved by creating strong synergy between cutting-edge fabrication of epitaxial single-crystalline complex oxides, nanoscale electrical characterization by scanning probe microscopy and theoretical modeling of the observed phenomena. The concept of the ferroelectric devices with electrically and mechanically tunable nonvolatile resistance represents a new paradigm shift in realization of the next-generation of non-volatile memory devices and low-power logic switches.

  11. Quasi-unipolar pentacene films embedded with fullerene for non-volatile organic transistor memories

    Energy Technology Data Exchange (ETDEWEB)

    Lee, Juhee; Lee, Sungpyo; Lee, Moo Hyung; Kang, Moon Sung, E-mail: mskang@ssu.ac.kr [Department of Chemical Engineering, Soongsil University, Seoul 156-743 (Korea, Republic of)

    2015-02-09

    Quasi-unipolar non-volatile organic transistor memory (NOTM) can combine the best characteristics of conventional unipolar and ambipolar NOTMs and, as a result, exhibit improved device performance. Unipolar NOTMs typically exhibit a large signal ratio between the programmed and erased current signals but also require a large voltage to program and erase the memory cells. Meanwhile, an ambipolar NOTM can be programmed and erased at lower voltages, but the resulting signal ratio is small. By embedding a discontinuous n-type fullerene layer within a p-type pentacene film, quasi-unipolar NOTMs are fabricated, of which the signal storage utilizes both electrons and holes while the electrical signal relies on only hole conduction. These devices exhibit superior memory performance relative to both pristine unipolar pentacene devices and ambipolar fullerene/pentacene bilayer devices. The quasi-unipolar NOTM exhibited a larger signal ratio between the programmed and erased states while also reducing the voltage required to program and erase a memory cell. This simple approach should be readily applicable for various combinations of advanced organic semiconductors that have been recently developed and thereby should make a significant impact on organic memory research.

  12. Transparent conducting oxides and production thereof

    Science.gov (United States)

    Gessert, Timothy A.; Yoshida, Yuki; Coutts, Timothy J.

    2014-06-10

    Transparent conducting oxides and production thereof are disclosed. An exemplary method of producing a transparent conducting oxide (TCO) material may comprise: providing a TCO target doped with either a high-permittivity oxide or a low-permittivity oxide in a process chamber. The method may also comprise depositing a metal oxide on the target in the process chamber to form a thin film having enhanced optical properties without substantially decreasing electrical quality.

  13. Optical and electrical properties of zinc oxide thin films with low resistivity via Li-N dual-acceptor doping

    Energy Technology Data Exchange (ETDEWEB)

    Zhang Daoli, E-mail: zhang_daoli@mail.hust.edu.cn [Department of Electronic Science and Technology, Huazhong University of Science and Technology, No. 1037 Luoyu Road, Hongshan District, Wuhan City, Hubei Province 430074 (China); Wuhan National Laboratory for Optoelectronics, 1037 Luoyu Road, Hongshan District, Wuhan City, Hubei Province 430074 (China); Zhang Jianbing [Department of Electronic Science and Technology, Huazhong University of Science and Technology, No. 1037 Luoyu Road, Hongshan District, Wuhan City, Hubei Province 430074 (China); Wuhan National Laboratory for Optoelectronics, 1037 Luoyu Road, Hongshan District, Wuhan City, Hubei Province 430074 (China); Guo Zhe [Department of Electronic Science and Technology, Huazhong University of Science and Technology, No. 1037 Luoyu Road, Hongshan District, Wuhan City, Hubei Province 430074 (China); Miao Xiangshui [Department of Electronic Science and Technology, Huazhong University of Science and Technology, No. 1037 Luoyu Road, Hongshan District, Wuhan City, Hubei Province 430074 (China); Wuhan National Laboratory for Optoelectronics, 1037 Luoyu Road, Hongshan District, Wuhan City, Hubei Province 430074 (China)

    2011-05-19

    Highlights: > Zinc oxide films have been deposited on glass substrates by Li-N dual-acceptor doping method via a modified SILAR method. > The resistivity of ZnO film was found to be 1.04 {Omega} cm with a Hall mobility of 0.749 cm{sup 2} V{sup -1} s{sup -1}, carrier concentration of 8.02 x 1018 cm{sup -3}, and transmittance of about 80% in visible range showing good crystallinity with prior c-axis orientation. > A shallow acceptor level of 91 meV is identified from free-to-neutral-acceptor transitions. > Another deep level of 255 meV was ascribed to Li{sub Zn}-Li{sub i} complex. - Abstract: Zinc oxide thin films with low resistivity have been deposited on glass substrates by Li-N dual-acceptor doping method via a modified successive ionic layer adsorption and reaction process. The thin films were systematically characterized via scanning electron microscopy (SEM), atomic force microscopy (AFM), X-ray diffraction, ultraviolet-visible spectrophotometry and fluorescence spectrophotometry. The resistivity of zinc oxide film was found to be 1.04 {Omega} cm with a Hall mobility of 0.749 cm{sup 2} V{sup -1} s{sup -1} and carrier concentration of 8.02 x 10{sup 18} cm{sup -3}. The Li-N dual-acceptor doped zinc oxide films showed good crystallinity with prior c-axis orientation, and high transmittance of about 80% in visible range. Moreover, the effects of Li doping level and other parameters on crystallinity, electrical and ultraviolet emission of zinc oxide films were investigated.

  14. Crystallization and electrical resistivity of Cu2O and CuO obtained by thermal oxidation of Cu thin films on SiO2/Si substrates

    International Nuclear Information System (INIS)

    De Los Santos Valladares, L.; Salinas, D. Hurtado; Dominguez, A. Bustamante; Najarro, D. Acosta; Khondaker, S.I.; Mitrelias, T.; Barnes, C.H.W.; Aguiar, J. Albino; Majima, Y.

    2012-01-01

    In this work, we study the crystallization and electrical resistivity of the formed oxides in a Cu/SiO 2 /Si thin film after thermal oxidation by ex-situ annealing at different temperatures up to 1000 °C. Upon increasing the annealing temperature, from the X ray diffractogram the phase evolution Cu → Cu + Cu 2 O → Cu 2 O → Cu 2 O + CuO → CuO was detected. Pure Cu 2 O films are obtained at 200 °C, whereas uniform CuO films without structural surface defects such as terraces, kinks, porosity or cracks are obtained in the temperature range 300–550 °C. In both oxides, crystallization improves with annealing temperature. A resistivity phase diagram, which is obtained from the current–voltage response, is presented here. The resistivity was expected to increase linearly as a function of the annealing temperature due to evolution of oxides. However, anomalous decreases are observed at different temperatures ranges, this may be related to the improvement of the crystallization and crystallite size when the temperature increases. - Highlights: ► The crystallization and electrical resistivity of oxides in a Cu films are studied. ► In annealing Cu films, the phase evolution Cu + Cu 2 O → Cu 2 O → Cu 2 O + CuO → CuO occurs. ► A resistivity phase diagram, obtained from the current–voltage response, is presented. ► Some decreases in the resistivity may be related to the crystallization.

  15. Unidirectional oxide hetero-interface thin-film diode

    International Nuclear Information System (INIS)

    Park, Youngmin; Lee, Eungkyu; Lee, Jinwon; Lim, Keon-Hee; Kim, Youn Sang

    2015-01-01

    The unidirectional thin-film diode based on oxide hetero-interface, which is well compatible with conventional thin-film fabrication process, is presented. With the metal anode/electron-transporting oxide (ETO)/electron-injecting oxide (EIO)/metal cathode structure, it exhibits that electrical currents ohmically flow at the ETO/EIO hetero-interfaces for only positive voltages showing current density (J)-rectifying ratio of ∼10 5 at 5 V. The electrical properties (ex, current levels, and working device yields) of the thin-film diode (TFD) are systematically controlled by changing oxide layer thickness. Moreover, we show that the oxide hetero-interface TFD clearly rectifies an AC input within frequency (f) range of 10 2  Hz < f < 10 6  Hz, providing a high feasibility for practical applications

  16. Unidirectional oxide hetero-interface thin-film diode

    Energy Technology Data Exchange (ETDEWEB)

    Park, Youngmin; Lee, Eungkyu; Lee, Jinwon; Lim, Keon-Hee [Program in Nano Science and Technology, Graduate School of Convergence Science and Technology, Seoul National University, Seoul 151-742 (Korea, Republic of); Kim, Youn Sang, E-mail: younskim@snu.ac.kr [Program in Nano Science and Technology, Graduate School of Convergence Science and Technology, Seoul National University, Seoul 151-742 (Korea, Republic of); Advanced Institute of Convergence Technology, Gyeonggi-do 443-270 (Korea, Republic of)

    2015-10-05

    The unidirectional thin-film diode based on oxide hetero-interface, which is well compatible with conventional thin-film fabrication process, is presented. With the metal anode/electron-transporting oxide (ETO)/electron-injecting oxide (EIO)/metal cathode structure, it exhibits that electrical currents ohmically flow at the ETO/EIO hetero-interfaces for only positive voltages showing current density (J)-rectifying ratio of ∼10{sup 5} at 5 V. The electrical properties (ex, current levels, and working device yields) of the thin-film diode (TFD) are systematically controlled by changing oxide layer thickness. Moreover, we show that the oxide hetero-interface TFD clearly rectifies an AC input within frequency (f) range of 10{sup 2} Hz < f < 10{sup 6} Hz, providing a high feasibility for practical applications.

  17. Detection and removal of impurities in nitric oxide generated from air by pulsed electrical discharge.

    Science.gov (United States)

    Yu, Binglan; Blaesi, Aron H; Casey, Noel; Raykhtsaum, Grigory; Zazzeron, Luca; Jones, Rosemary; Morrese, Alexander; Dobrynin, Danil; Malhotra, Rajeev; Bloch, Donald B; Goldstein, Lee E; Zapol, Warren M

    2016-11-30

    Inhalation of nitric oxide (NO) produces selective pulmonary vasodilation without dilating the systemic circulation. However, the current NO/N 2 cylinder delivery system is cumbersome and expensive. We developed a lightweight, portable, and economical device to generate NO from air by pulsed electrical discharge. The objective of this study was to investigate and optimize the purity and safety of NO generated by this device. By using low temperature streamer discharges in the plasma generator, we produced therapeutic levels of NO with very low levels of nitrogen dioxide (NO 2 ) and ozone. Despite the low temperature, spark generation eroded the surface of the electrodes, contaminating the gas stream with metal particles. During prolonged NO generation there was gradual loss of the iridium high-voltage tip (-90 μg/day) and the platinum-nickel ground electrode (-55 μg/day). Metal particles released from the electrodes were trapped by a high-efficiency particulate air (HEPA) filter. Quadrupole mass spectroscopy measurements of effluent gas during plasma NO generation showed that a single HEPA filter removed all of the metal particles. Mice were exposed to breathing 50 parts per million of electrically generated NO in air for 28 days with only a scavenger and no HEPA filter; the mice did not develop pulmonary inflammation or structural changes and iridium and platinum particles were not detected in the lungs of these mice. In conclusion, an electric plasma generator produced therapeutic levels of NO from air; scavenging and filtration effectively eliminated metallic impurities from the effluent gas. Copyright © 2016 Elsevier Inc. All rights reserved.

  18. Electrical property heterogeneity at transparent conductive oxide/organic semiconductor interfaces: mapping contact ohmicity using conducting-tip atomic force microscopy.

    Science.gov (United States)

    MacDonald, Gordon A; Veneman, P Alexander; Placencia, Diogenes; Armstrong, Neal R

    2012-11-27

    We demonstrate mapping of electrical properties of heterojunctions of a molecular semiconductor (copper phthalocyanine, CuPc) and a transparent conducting oxide (indium-tin oxide, ITO), on 20-500 nm length scales, using a conductive-probe atomic force microscopy technique, scanning current spectroscopy (SCS). SCS maps are generated for CuPc/ITO heterojunctions as a function of ITO activation procedures and modification with variable chain length alkyl-phosphonic acids (PAs). We correlate differences in small length scale electrical properties with the performance of organic photovoltaic cells (OPVs) based on CuPc/C(60) heterojunctions, built on these same ITO substrates. SCS maps the "ohmicity" of ITO/CuPc heterojunctions, creating arrays of spatially resolved current-voltage (J-V) curves. Each J-V curve is fit with modified Mott-Gurney expressions, mapping a fitted exponent (γ), where deviations from γ = 2.0 suggest nonohmic behavior. ITO/CuPc/C(60)/BCP/Al OPVs built on nonactivated ITO show mainly nonohmic SCS maps and dark J-V curves with increased series resistance (R(S)), lowered fill-factors (FF), and diminished device performance, especially near the open-circuit voltage. Nearly optimal behavior is seen for OPVs built on oxygen-plasma-treated ITO contacts, which showed SCS maps comparable to heterojunctions of CuPc on clean Au. For ITO electrodes modified with PAs there is a strong correlation between PA chain length and the degree of ohmicity and uniformity of electrical response in ITO/CuPc heterojunctions. ITO electrodes modified with 6-8 carbon alkyl-PAs show uniform and nearly ohmic SCS maps, coupled with acceptable CuPc/C(60)OPV performance. ITO modified with C14 and C18 alkyl-PAs shows dramatic decreases in FF, increases in R(S), and greatly enhanced recombination losses.

  19. Effect of graphite loading on the electrical and mechanical properties of Poly (Ethylene Oxide)/Poly (Vinyl Chloride) polymer films

    Science.gov (United States)

    Hajar, M. D. S.; Supri, A. G.; Hanif, M. P. M.; Yazid, M. I. M.

    2017-10-01

    In this study, films consisting of a blend of poly (ethylene oxide)/poly (vinyl chloride) (PEO/PVC) and a conductive filler, graphite were prepared and characterized for their mechanical and electrical properties. Solid polymer blend films based on PEO/PVC (50/50 wt%/wt%) with different graphite loading were prepared by using solution casting technique. Electrical conductivity results discovered the conductivity increased with increasing of filler loading. However, increasing amount of graphite loading led to a decreased in tensile strength and young’s modulus of PEO/PVC/Graphite polymer films. The dispersion of graphite and mechanism of conductive path in the polymer films were also investigated by scanning electron microscopy (SEM). The morphology of the PEO/PVC/Graphite polymer films shows that agglomeration occurred to complete the connection of conductive path, thus improving the conductivity behavior of the polymer films.

  20. Crack density and electrical resistance in indium-tin-oxide/polymer thin films under cyclic loading

    KAUST Repository

    Mora Cordova, Angel

    2014-11-01

    Here, we propose a damage model that describes the degradation of the material properties of indium-tin-oxide (ITO) thin films deposited on polymer substrates under cyclic loading. We base this model on our earlier tensile test model and show that the new model is suitable for cyclic loading. After calibration with experimental data, we are able to capture the stress-strain behavior and changes in electrical resistance of ITO thin films. We are also able to predict the crack density using calibrations from our previous model. Finally, we demonstrate the capabilities of our model based on simulations using material properties reported in the literature. Our model is implemented in the commercially available finite element software ABAQUS using a user subroutine UMAT.[Figure not available: see fulltext.].

  1. The synthesis of higher oxides of alkali and alkaline earth metals in an electric discharge: Theoretical and experimental studies

    Science.gov (United States)

    Bell, A. T.; Sadhukhan, P.

    1974-01-01

    Potassium hydroxide was subjected to the products of an electrical discharge sustained in oxygen and produced both potassium peroxide and superoxide. The conversion to higher oxides was shown to strongly depend upon the particle size of KOH, the position of KOH in the discharge zone, and the operating conditions of the discharge. Similar experiments were performed with hydroxides of lithium and calcium which do not form superoxides, but are converted to peroxides. The yields of peroxides were shown to strongly depend upon the operating conditions of the discharge. The absence of superoxides and the presence of peroxides of lithium and calcium was explained from the consideration of relative thermodynamic stability of the oxides of lithium and calcium. Thermogravimetric analysis was shown to provide a more accurate means for determining the amount of KO2 than previous methods.

  2. Low-Temperature Reduction of Graphene Oxide: Electrical Conductance and Scanning Kelvin Probe Force Microscopy

    Science.gov (United States)

    Slobodian, Oleksandr M.; Lytvyn, Peter M.; Nikolenko, Andrii S.; Naseka, Victor M.; Khyzhun, Oleg Yu.; Vasin, Andrey V.; Sevostianov, Stanislav V.; Nazarov, Alexei N.

    2018-05-01

    Graphene oxide (GO) films were formed by drop-casting method and were studied by FTIR spectroscopy, micro-Raman spectroscopy (mRS), X-ray photoelectron spectroscopy (XPS), four-points probe method, atomic force microscopy (AFM), and scanning Kelvin probe force (SKPFM) microscopy after low-temperature annealing at ambient conditions. It was shown that in temperature range from 50 to 250 °C the electrical resistivity of the GO films decreases by seven orders of magnitude and is governed by two processes with activation energies of 6.22 and 1.65 eV, respectively. It was shown that the first process is mainly associated with water and OH groups desorption reducing the thickness of the film by 35% and causing the resistivity decrease by five orders of magnitude. The corresponding activation energy is the effective value determined by desorption and electrical connection of GO flakes from different layers. The second process is mainly associated with desorption of oxygen epoxy and alkoxy groups connected with carbon located in the basal plane of GO. AFM and SKPFM methods showed that during the second process, first, the surface of GO plane is destroyed forming nanostructured surface with low work function and then at higher temperature a flat carbon plane is formed that results in an increase of the work function of reduced GO.

  3. Optimizing the electrical excitation of an atmospheric pressure plasma advanced oxidation process.

    Science.gov (United States)

    Olszewski, P; Li, J F; Liu, D X; Walsh, J L

    2014-08-30

    The impact of pulse-modulated generation of atmospheric pressure plasma on the efficiency of organic dye degradation has been investigated. Aqueous samples of methyl orange were exposed to low temperature air plasma and the degradation efficiency was determined by absorbance spectroscopy. The plasma was driven at a constant frequency of 35kHz with a duty cycle of 25%, 50%, 75% and 100%. Relative concentrations of dissolved nitrogen oxides, pH, conductivity and the time evolution of gas phase ozone were measured to identify key parameters responsible for the changes observed in degradation efficiency. The results indicate that pulse modulation significantly improved dye degradation efficiency, with a plasma pulsed at 25% duty showing a two-fold enhancement. Additionally, pulse modulation led to a reduction in the amount of nitrate contamination added to the solution by the plasma. The results clearly demonstrate that optimization of the electrical excitation of the plasma can enhance both degradation efficiency and the final water quality. Copyright © 2014 Elsevier B.V. All rights reserved.

  4. Physicochemical and Electrical Properties of Praseodymium Oxides

    Directory of Open Access Journals (Sweden)

    Sergio Ferro

    2011-01-01

    Full Text Available The industrial research is continuously looking for novelties that could improve the applied processes, increasing the yields, lowering the costs, or improving the performances. In industrial electrochemistry, one more aspect is the stability of electrode materials, which is generally balanced by the catalytic activity: the higher the latter, the lower the former. A compromise has to be found, and an optimization is often the result of new ideas that completely change the way of thinking. Praseodymium-oxide-based cathodes have been proved to be quite interesting devices: the hydrogen evolution reaction is guaranteed by the presence of a noble metal (platinum and/or rhodium, while the stability and poisoning resistance seem to be strongly improved by the presence of lanthanide oxides.

  5. Graphene Oxide Papers Simultaneously Doped with Mg(2+) and Cl(-) for Exceptional Mechanical, Electrical, and Dielectric Properties.

    Science.gov (United States)

    Lin, Xiuyi; Shen, Xi; Sun, Xinying; Liu, Xu; Wu, Ying; Wang, Zhenyu; Kim, Jang-Kyo

    2016-01-27

    This paper reports simultaneous modification of graphene oxide (GO) papers by functionalization with MgCl2. The Mg(2+) ions enhance both the interlayer cross-links and lateral bridging between the edges of adjacent GO sheets by forming Mg-O bonds. The improved load transfer between the GO sheets gives rise to a maximum of 200 and 400% increases in Young's modulus and tensile strength of GO papers. The intercalation of chlorine between the GO layers alters the properties of GO papers in two ways by forming ionic Cl(-) and covalent C-Cl bonds. The p-doping effect arising from Cl contributes to large enhancements in electrical conductivities of GO papers, with a remarkable 2500-fold surge in the through-thickness direction. The layered structure and the anisotropic electrical conductivities of reduced GO papers naturally create numerous nanocapacitors that lead to charge accumulation based on the Maxwell-Wagner (MW) polarization. The combined effect of much promoted dipolar polarizations due to Mg-O, C-Cl, and Cl(-) species results in an exceptionally high dielectric constant greater than 60 000 and a dielectric loss of 3 at 1 kHz by doping with 2 mM MgCl2. The excellent mechanical and electrical properties along with unique dielectric performance shown by the modified GO and rGO papers open new avenues for niche applications, such as electromagnetic interference shielding materials.

  6. Hierarchical Load Tracking Control of a Grid-Connected Solid Oxide Fuel Cell for Maximum Electrical Efficiency Operation

    Directory of Open Access Journals (Sweden)

    Yonghui Li

    2015-03-01

    Full Text Available Based on the benchmark solid oxide fuel cell (SOFC dynamic model for power system studies and the analysis of the SOFC operating conditions, the nonlinear programming (NLP optimization method was used to determine the maximum electrical efficiency of the grid-connected SOFC subject to the constraints of fuel utilization factor, stack temperature and output active power. The optimal operating conditions of the grid-connected SOFC were obtained by solving the NLP problem considering the power consumed by the air compressor. With the optimal operating conditions of the SOFC for the maximum efficiency operation obtained at different active power output levels, a hierarchical load tracking control scheme for the grid-connected SOFC was proposed to realize the maximum electrical efficiency operation with the stack temperature bounded. The hierarchical control scheme consists of a fast active power control and a slower stack temperature control. The active power control was developed by using a decentralized control method. The efficiency of the proposed hierarchical control scheme was demonstrated by case studies using the benchmark SOFC dynamic model.

  7. Effect of substrate temperature on structural, optical and electrical properties of pulsed laser ablated nanostructured indium oxide films

    International Nuclear Information System (INIS)

    Beena, D.; Lethy, K.J.; Vinodkumar, R.; Mahadevan Pillai, V.P.; Ganesan, V.; Phase, D.M.; Sudheer, S.K.

    2009-01-01

    Nanocrystalline indium oxide (INO) films are deposited in a back ground oxygen pressure at 0.02 mbar on quartz substrates at different substrate temperatures (T s ) ranging from 300 to 573 K using pulsed laser deposition technique. The films are characterized using GIXRD, XPS, AFM and UV-visible spectroscopy to study the effect of substrate temperature on the structural and optical properties of films. The XRD patterns suggest that the films deposited at room temperature are amorphous in nature and the crystalline nature of the films increases with increase in substrate temperature. Films prepared at T s ≥ 473 K are polycrystalline in nature (cubic phase). Crystalline grain size calculation based on Debye Scherrer formula indicates that the particle size enhances with the increase in substrate temperature. Lattice constant of the films are calculated from the XRD data. XPS studies suggest that all the INO films consist of both crystalline and amorphous phases. XPS results show an increase in oxygen content with increase in substrate temperature and reveals that the films deposited at higher substrate temperatures exhibit better stoichiometry. The thickness measurements using interferometric techniques show that the film thickness decreases with increase in substrate temperature. Analysis of the optical transmittance data of the films shows a blue shift in the values of optical band gap energy for the films compared to that of the bulk material owing to the quantum confinement effect due to the presence of quantum dots in the films. Refractive index and porosity of the films are also investigated. Room temperature DC electrical measurements shows that the INO films investigated are having relatively high electrical resistivity in the range of 0.80-1.90 Ωm. Low temperature electrical conductivity measurements in the temperature range of 50-300 K for the film deposited at 300 K give a linear Arrhenius plot suggesting thermally activated conduction. Surface

  8. Electrical and Optical Properties of Fluorine Doped Tin Oxide Thin Films Prepared by Magnetron Sputtering

    Directory of Open Access Journals (Sweden)

    Ziad Y. Banyamin

    2014-10-01

    Full Text Available Fluorine doped tin oxide (FTO coatings have been prepared using the mid-frequency pulsed DC closed field unbalanced magnetron sputtering technique in an Ar/O2 atmosphere using blends of tin oxide and tin fluoride powder formed into targets. FTO coatings were deposited with a thickness of 400 nm on glass substrates. No post-deposition annealing treatments were carried out. The effects of the chemical composition on the structural (phase, grain size, optical (transmission, optical band-gap and electrical (resistivity, charge carrier, mobility properties of the thin films were investigated. Depositing FTO by magnetron sputtering is an environmentally friendly technique and the use of loosely packed blended powder targets gives an efficient means of screening candidate compositions, which also provides a low cost operation. The best film characteristics were achieved using a mass ratio of 12% SnF2 to 88% SnO2 in the target. The thin film produced was polycrystalline with a tetragonal crystal structure. The optimized conditions resulted in a thin film with average visible transmittance of 83% and optical band-gap of 3.80 eV, resistivity of 6.71 × 10−3 Ω·cm, a carrier concentration (Nd of 1.46 × 1020 cm−3 and a mobility of 15 cm2/Vs.

  9. Properties and electric characterizations of tetraethyl orthosilicate-based plasma enhanced chemical vapor deposition oxide film deposited at 400 °C for through silicon via application

    International Nuclear Information System (INIS)

    Su, Meiying; Yu, Daquan; Liu, Yijun; Wan, Lixi; Song, Chongshen; Dai, Fengwei; Xue, Kai; Jing, Xiangmeng; Guidotti, Daniel

    2014-01-01

    The dielectric via liner of through silicon vias was deposited at 400 °C using a tetraethyl orthosilicate (TEOS)-based plasma enhanced chemical vapor deposition process in a via-middle integration scheme. The morphology, conformality and chemical compositions of the liner film were characterized using field emission scanning electron microscopy and Fourier Transform Infrared spectroscopy. The thermal properties and electrical performance of blanket TEOS films were investigated by high temperature film stress and mercury probe Capacitance–Voltage measurements. The TEOS SiO 2 films show good conformality, excellent densification, low thermal stress, high breakdown voltage and low current leakage. - Highlights: • Tetraethyl orthosilicate-based oxide films were deposited for packaging application. • The oxide films deposited plasma-enhanced chemical vapor deposition (PECVD) at 400 °C. • The PECVD oxide films exhibit good step coverage. • The 400 °C PECVD oxide films exhibit low thermal stress and current leakage. • The 400 °C PECVD oxide films show high breakdown voltage and acceptable permittivity

  10. Properties and electric characterizations of tetraethyl orthosilicate-based plasma enhanced chemical vapor deposition oxide film deposited at 400 °C for through silicon via application

    Energy Technology Data Exchange (ETDEWEB)

    Su, Meiying, E-mail: sumeiying@ime.ac.cn [Institute of Microelectronics of Chinese Academy of Sciences, Beijing 100029 (China); National Center for Advanced Packaging, Wuxi 214135 (China); Yu, Daquan, E-mail: yudaquan@ime.ac.cn [Institute of Microelectronics of Chinese Academy of Sciences, Beijing 100029 (China); National Center for Advanced Packaging, Wuxi 214135 (China); Jiangsu R and D Center for Internet of Things, Wuxi 214135 (China); Liu, Yijun [Piotech Co. Ltd, Shenyang 110179 (China); Wan, Lixi [Institute of Microelectronics of Chinese Academy of Sciences, Beijing 100029 (China); Song, Chongshen; Dai, Fengwei [Institute of Microelectronics of Chinese Academy of Sciences, Beijing 100029 (China); National Center for Advanced Packaging, Wuxi 214135 (China); Xue, Kai [National Center for Advanced Packaging, Wuxi 214135 (China); Jing, Xiangmeng [Institute of Microelectronics of Chinese Academy of Sciences, Beijing 100029 (China); National Center for Advanced Packaging, Wuxi 214135 (China); Guidotti, Daniel [Institute of Microelectronics of Chinese Academy of Sciences, Beijing 100029 (China)

    2014-01-01

    The dielectric via liner of through silicon vias was deposited at 400 °C using a tetraethyl orthosilicate (TEOS)-based plasma enhanced chemical vapor deposition process in a via-middle integration scheme. The morphology, conformality and chemical compositions of the liner film were characterized using field emission scanning electron microscopy and Fourier Transform Infrared spectroscopy. The thermal properties and electrical performance of blanket TEOS films were investigated by high temperature film stress and mercury probe Capacitance–Voltage measurements. The TEOS SiO{sub 2} films show good conformality, excellent densification, low thermal stress, high breakdown voltage and low current leakage. - Highlights: • Tetraethyl orthosilicate-based oxide films were deposited for packaging application. • The oxide films deposited plasma-enhanced chemical vapor deposition (PECVD) at 400 °C. • The PECVD oxide films exhibit good step coverage. • The 400 °C PECVD oxide films exhibit low thermal stress and current leakage. • The 400 °C PECVD oxide films show high breakdown voltage and acceptable permittivity.

  11. Studies on the electrical properties of reactive DC magnetron-sputtered indium-doped silver oxide thin films: The role of oxygen

    Energy Technology Data Exchange (ETDEWEB)

    Subrahmanyam, A [Semiconductor Physics Laboratory, Department of Physics, Indian Institute of Technology Madras, Chennai 600036 (India); Barik, Ullash Kumar [Semiconductor Physics Laboratory, Department of Physics, Indian Institute of Technology Madras, Chennai 600036 (India)

    2007-03-15

    Indium ({approx}10 at.%)-doped silver oxide (AIO) thin films have been prepared on glass substrates at room temperature (300 K) by reactive DC magnetron sputtering technique using an alloy target made of pure (99.99%) silver and indium (90:10 at.%) metals. The oxygen flow rates have been varied in the range 0.00-3.44 sccm during sputtering. The X-ray diffraction data on these indium-doped silver oxide films show polycrystalline nature. With increasing oxygen flow rate, the carrier concentration, the Hall mobility and the electron mean free path decrease. These films show a very low positive temperature coefficient of resistivity {approx}3.40x10{sup -8} ohm-cm/K. The work function values for these films (measured by Kelvin probe technique) are in the range 4.81-5.07 eV. The high electrical resistivity indicate that the films are in the island state (size effects). Calculations of the partial ionic charge (by Sanderson's theory) show that indium doping in silver oxide thin films enhance the ionicity.

  12. Studies on the electrical properties of reactive DC magnetron-sputtered indium-doped silver oxide thin films: The role of oxygen

    International Nuclear Information System (INIS)

    Subrahmanyam, A.; Barik, Ullash Kumar

    2007-01-01

    Indium (∼10 at.%)-doped silver oxide (AIO) thin films have been prepared on glass substrates at room temperature (300 K) by reactive DC magnetron sputtering technique using an alloy target made of pure (99.99%) silver and indium (90:10 at.%) metals. The oxygen flow rates have been varied in the range 0.00-3.44 sccm during sputtering. The X-ray diffraction data on these indium-doped silver oxide films show polycrystalline nature. With increasing oxygen flow rate, the carrier concentration, the Hall mobility and the electron mean free path decrease. These films show a very low positive temperature coefficient of resistivity ∼3.40x10 -8 ohm-cm/K. The work function values for these films (measured by Kelvin probe technique) are in the range 4.81-5.07 eV. The high electrical resistivity indicate that the films are in the island state (size effects). Calculations of the partial ionic charge (by Sanderson's theory) show that indium doping in silver oxide thin films enhance the ionicity

  13. Graphene oxide powders with different oxidation degree, prepared by synthesis variations of the Hummers method

    International Nuclear Information System (INIS)

    Guerrero-Contreras, Jesus; Caballero-Briones, F.

    2015-01-01

    Graphene oxide (GO) powders with different oxidation degree estimated through the relative intensity of the infrared absorption bands related to oxygen containing groups were prepared through variations of the Hummers method. The GO powders were analyzed by Transmission Electron Microscopy, Energy dispersive spectroscopy, X-ray Photoelectron Spectroscopy, Fourier Transform Infrared Spectroscopy, Raman spectroscopy, X-ray Diffraction, UV–VIS spectroscopy and Electrical Resistance measurements. Several square micron GO sheets with low wrinkling were obtained. Oxygen to carbon ratio is around 0.2 in all the samples although a strong variance in the relative intensity of the oxygen related infrared bands is evident. Thus, the oxidation degree was estimated from the FTIR measurements using the quotient between the C–O related bands area to the total area under the spectra. FTIR shows presence of hydroxyl (–OH), epoxy (C–O–C), carboxyl (–COOH) and carbonyl (C=O) moieties and evidence of intermolecular interactions between adjacent groups. These interactions influence the exfoliation degree, the absorbance of the GO suspensions, as well as the electrical resistance, while the crystalline domain sizes, estimated from XRD and Raman do not show a noticeable behavior related with the composition and molecular structure. The results indicate that the electrical resistance is influenced mainly by the surface chemistry of the GO powders and not only by the O/C ratio. The control of the surface chemistry of GO powders would allow their use as additives in organic bulk heterojunction solar cells with enhanced photoconversion efficiency. - Highlights: • Powders of graphene oxide with different oxidation degree were prepared through variations of the Hummers method. • Raman spectroscopy and XRD demonstrated similar crystallite domain size in the samples. • Electrical resistance, exfoliation degree and optical absorption depend on the molecular structure.

  14. Graphene oxide powders with different oxidation degree, prepared by synthesis variations of the Hummers method

    Energy Technology Data Exchange (ETDEWEB)

    Guerrero-Contreras, Jesus; Caballero-Briones, F., E-mail: fcaballero@ipn.mx

    2015-03-01

    Graphene oxide (GO) powders with different oxidation degree estimated through the relative intensity of the infrared absorption bands related to oxygen containing groups were prepared through variations of the Hummers method. The GO powders were analyzed by Transmission Electron Microscopy, Energy dispersive spectroscopy, X-ray Photoelectron Spectroscopy, Fourier Transform Infrared Spectroscopy, Raman spectroscopy, X-ray Diffraction, UV–VIS spectroscopy and Electrical Resistance measurements. Several square micron GO sheets with low wrinkling were obtained. Oxygen to carbon ratio is around 0.2 in all the samples although a strong variance in the relative intensity of the oxygen related infrared bands is evident. Thus, the oxidation degree was estimated from the FTIR measurements using the quotient between the C–O related bands area to the total area under the spectra. FTIR shows presence of hydroxyl (–OH), epoxy (C–O–C), carboxyl (–COOH) and carbonyl (C=O) moieties and evidence of intermolecular interactions between adjacent groups. These interactions influence the exfoliation degree, the absorbance of the GO suspensions, as well as the electrical resistance, while the crystalline domain sizes, estimated from XRD and Raman do not show a noticeable behavior related with the composition and molecular structure. The results indicate that the electrical resistance is influenced mainly by the surface chemistry of the GO powders and not only by the O/C ratio. The control of the surface chemistry of GO powders would allow their use as additives in organic bulk heterojunction solar cells with enhanced photoconversion efficiency. - Highlights: • Powders of graphene oxide with different oxidation degree were prepared through variations of the Hummers method. • Raman spectroscopy and XRD demonstrated similar crystallite domain size in the samples. • Electrical resistance, exfoliation degree and optical absorption depend on the molecular structure.

  15. Structural and electrical characteristics of high-k/metal gate metal oxide semiconductor capacitors fabricated on flexible, semi-transparent silicon (100) fabric

    KAUST Repository

    Rojas, Jhonathan Prieto

    2013-02-12

    In pursuit of flexible computers with high performance devices, we demonstrate a generic process to fabricate 10 000 metal-oxide-semiconductor capacitors (MOSCAPs) with semiconductor industry\\'s most advanced high-k/metal gate stacks on widely used, inexpensive bulk silicon (100) wafers and then using a combination of iso-/anisotropic etching to release the top portion of the silicon with the already fabricated devices as a mechanically flexible (bending curvature of 133 m−1), optically semi-transparent silicon fabric (1.5 cm × 3 cm × 25 μm). The electrical characteristics show 3.7 nm effective oxide thickness, −0.2 V flat band voltage, and no hysteresis from the fabricated MOSCAPs.

  16. Structural and electrical characteristics of high-k/metal gate metal oxide semiconductor capacitors fabricated on flexible, semi-transparent silicon (100) fabric

    KAUST Repository

    Rojas, Jhonathan Prieto; Hussain, Muhammad Mustafa; Sevilla, Galo T.

    2013-01-01

    In pursuit of flexible computers with high performance devices, we demonstrate a generic process to fabricate 10 000 metal-oxide-semiconductor capacitors (MOSCAPs) with semiconductor industry's most advanced high-k/metal gate stacks on widely used, inexpensive bulk silicon (100) wafers and then using a combination of iso-/anisotropic etching to release the top portion of the silicon with the already fabricated devices as a mechanically flexible (bending curvature of 133 m−1), optically semi-transparent silicon fabric (1.5 cm × 3 cm × 25 μm). The electrical characteristics show 3.7 nm effective oxide thickness, −0.2 V flat band voltage, and no hysteresis from the fabricated MOSCAPs.

  17. A hybrid ferroelectric-flash memory cells

    Science.gov (United States)

    Park, Jae Hyo; Byun, Chang Woo; Seok, Ki Hwan; Kim, Hyung Yoon; Chae, Hee Jae; Lee, Sol Kyu; Son, Se Wan; Ahn, Donghwan; Joo, Seung Ki

    2014-09-01

    A ferroelectric-flash (F-flash) memory cells having a metal-ferroelectric-nitride-oxynitride-silicon structure are demonstrated, and the ferroelectric materials were perovskite-dominated Pb(Zr,Ti)O3 (PZT) crystallized by Pt gate electrode. The PZT thin-film as a blocking layer improves electrical and memorial performance where programming and erasing mechanism are different from the metal-ferroelectric-insulator-semiconductor device or the conventional silicon-oxide-nitride-oxide-silicon device. F-flash cells exhibit not only the excellent electrical transistor performance, having 442.7 cm2 V-1 s-1 of field-effect mobility, 190 mV dec-1 of substhreshold slope, and 8 × 105 on/off drain current ratio, but also a high reliable memory characteristics, having a large memory window (6.5 V), low-operating voltage (0 to -5 V), faster P/E switching speed (50/500 μs), long retention time (>10 years), and excellent fatigue P/E cycle (>105) due to the boosting effect, amplification effect, and energy band distortion of nitride from the large polarization. All these characteristics correspond to the best performances among conventional flash cells reported so far.

  18. Electrical and morphological characterization of transfer-printed Au/Ti/TiO{sub x}/p{sup +}-Si nano- and microstructures with plasma-grown titanium oxide layers

    Energy Technology Data Exchange (ETDEWEB)

    Weiler, Benedikt, E-mail: benedikt.weiler@nano.ei.tum.de; Nagel, Robin; Albes, Tim; Haeberle, Tobias; Gagliardi, Alessio; Lugli, Paolo [Institute for Nanoelectronics, Technische Universität München, Arcisstrasse 21, 80333 München (Germany)

    2016-04-14

    Highly-ordered, sub-70 nm-MOS-junctions of Au/Ti/TiO{sub x}/p{sup +}-Si were efficiently and reliably fabricated by nanotransfer-printing (nTP) over large areas and their functionality was investigated with respect to their application as MOS-devices. First, we used a temperature-enhanced nTP process and integrated the plasma-oxidation of a nm-thin titanium film being e-beam evaporated directly on the stamp before the printing step without affecting the p{sup +}-Si substrate. Second, morphological investigations (scanning electron microscopy) of the nanostructures confirm the reliable transfer of Au/Ti/TiO{sub x}-pillars of 50 nm, 75 nm, and 100 nm size of superior quality on p{sup +}-Si by our transfer protocol. Third, the fabricated nanodevices are also characterized electrically by conductive AFM. Fourth, the results are compared to probe station measurements on identically processed, i.e., transfer-printed μm-MOS-structures including a systematic investigation of the oxide formation. The jV-characteristics of these MOS-junctions demonstrate the electrical functionality as plasma-grown tunneling oxides and the effectivity of the transfer-printing process for their large-scale fabrication. Next, our findings are supported by fits to the jV-curves of the plasma-grown titanium oxide by kinetic-Monte-Carlo simulations. These fits allowed us to determine the dominant conduction mechanisms, the material parameters of the oxides and, in particular, a calibration of the thickness depending on applied plasma time and power. Finally, also a relative dielectric permittivity of 12 was found for such plasma-grown TiO{sub x}-layers.

  19. Iron-oxidation processes in an electroflocculation (electrocoagulation) cell

    Energy Technology Data Exchange (ETDEWEB)

    Sasson, Moshe Ben, E-mail: mosheinspain@hotmail.com [Department of Soil and Water Sciences, Robert H. Smith Faculty of Agriculture, Food and Environment, Hebrew University of Jerusalem, Rehovot 76100 (Israel); Calmano, Wolfgang [Institute of Environmental Technology and Energy Economics, Technical University of Hamburg-Harburg, 21073 Hamburg (Germany); Adin, Avner [Department of Soil and Water Sciences, Robert H. Smith Faculty of Agriculture, Food and Environment, Hebrew University of Jerusalem, Rehovot 76100 (Israel)

    2009-11-15

    The processes of iron oxidation in an electroflocculation cell were investigated for a pH range of 5-9 and electric currents of 0.05-0.4 A (equivalent current densities of 8.6-69 A/m{sup 2}). At all pH values and electric currents investigated, it was demonstrated and proven that for all practical purposes, the form of iron that dissolves from the anode is Fe{sup 2+} (ferrous). The difference between the amount of theoretical dissolution as calculated by Faraday's law and the amount of observed dissolved iron ions may indicate two phenomena in electrochemical cells. The first is possible dissolution of the anode even without the operation of an electric current; this led to higher theoretical dissolution rates at lower pH. The second is the participation of some of the electrons of the electric current in reactions other than anode dissolution which led to lower theoretical dissolution rates at higher pH. Those other reactions did not lead to an increase in the local oxidation saturation level near the anode and did not affect iron-oxidation rates in the electroflocculation processes. The oxidation rates of the dissolved Fe{sup 2+} (ferrous) to Fe{sup 3+} (ferric) ions in electroflocculation processes were strongly dependent on the pH and were similar to the known oxidation rates of iron in non-electrochemical cells.

  20. Iron-oxidation processes in an electroflocculation (electrocoagulation) cell

    International Nuclear Information System (INIS)

    Sasson, Moshe Ben; Calmano, Wolfgang; Adin, Avner

    2009-01-01

    The processes of iron oxidation in an electroflocculation cell were investigated for a pH range of 5-9 and electric currents of 0.05-0.4 A (equivalent current densities of 8.6-69 A/m 2 ). At all pH values and electric currents investigated, it was demonstrated and proven that for all practical purposes, the form of iron that dissolves from the anode is Fe 2+ (ferrous). The difference between the amount of theoretical dissolution as calculated by Faraday's law and the amount of observed dissolved iron ions may indicate two phenomena in electrochemical cells. The first is possible dissolution of the anode even without the operation of an electric current; this led to higher theoretical dissolution rates at lower pH. The second is the participation of some of the electrons of the electric current in reactions other than anode dissolution which led to lower theoretical dissolution rates at higher pH. Those other reactions did not lead to an increase in the local oxidation saturation level near the anode and did not affect iron-oxidation rates in the electroflocculation processes. The oxidation rates of the dissolved Fe 2+ (ferrous) to Fe 3+ (ferric) ions in electroflocculation processes were strongly dependent on the pH and were similar to the known oxidation rates of iron in non-electrochemical cells.

  1. Effect of a PEDOT:PSS modified layer on the electrical characteristics of flexible memristive devices based on graphene oxide:polyvinylpyrrolidone nanocomposites

    Science.gov (United States)

    Kim, Woo Kyum; Wu, Chaoxing; Kim, Tae Whan

    2018-06-01

    The electrical characteristics of flexible memristive devices utilizing a graphene oxide (GO):polyvinylpyrrolidone (PVP) nanocomposite charge-trapping layer with a poly(3,4-ethylenedioxythiophene):poly(styrene sulfonate) (PEDOT:PSS)-modified layer fabricated on an indium-tin-oxide (ITO)-coated polyethylene glycol naphthalate (PEN) substrate were investigated. Current-voltage (I-V) curves for the Al/GO:PVP/PEDOT:PSS/ITO/PEN devices showed remarkable hysteresis behaviors before and after bending. The maximum memory margins of the devices before and after 100 bending cycles were approximately 7.69 × 103 and 5.16 × 102, respectively. The devices showed nonvolatile memory effect with a retention time of more than 1 × 104 s. The "Reset" voltages were distributed between 2.3 and 3.5 V, and the "Set" voltages were dispersed between -0.7 and -0.2 V, indicative of excellent, uniform electrical performance. The endurance number of ON/OFF-switching and bending cycles for the devices was 1 × 102, respectively. The bipolar resistive switching behavior was explained on the basis of I-V results. In particular, the bipolar resistive switching behaviors of the LRS and the HRS for the devices are dominated by the Ohmic and space charge current mechanisms, respectively.

  2. Electrical and mechanical properties of 0.5Ba (Zr0.2Ti0.8)O3-0.5 (Ba0.7Ca0.3)TiO3 (BZT-BCT) lead free ferroelectric ceramics reinforced with Al2O3 nano-oxide

    International Nuclear Information System (INIS)

    Adhikari, Prativa; Mazumder, R.

    2014-01-01

    Piezoelectric ceramics are widely used as actuator, resonator, and spark igniter. Recently, much attention has been paid to prepare 0.5Ba (Zr 0.2 Ti 0.8 )O 3 -0.5 (Ba 0.7 Ca 0.3 )TiO 3 (BZT-BCT) piezoelectric ceramics because of its good dielectric, piezoelectric properties and environment friendly nature. However, piezoelectric ceramics based on BaTiO 3 suffer from low reliability and poor mechanical properties such as strength and toughness. For practical application improvement of the mechanical properties of BaTiO 3 -based ceramics is strongly required. A novel method has been used to improve the mechanical properties of structural ceramics by reinforcement of oxide (Al 2 O 3 , MgO, ZrO 2 and Stabilized-ZrO 2 ) or non-oxide (SiC) particles. It is well known that electrical properties of ferroelectric ceramics generally degrade with non-ferroelectric additives and decrease in sinterability usually encountered with refractory oxide additives. Use of nano-oxide additives may drastically reduce the amount of additive and electrical property may not degrade much. In this report we would show the electrical and mechanical properties of BZT-BCT with Al 2 O 3 nano oxide additive. Modified BZT-BCT nanocomposites were prepared by mixing and sintering of solid state synthesized Zr, Ca modified barium titanate powder and small amount (0.1-2.0 vol %) of nano-oxides, i.e. Al 2 O 3 . Effect of sintering temperature, time, particle size of the nano-oxide additives on electrical (dielectric constant, loss factor, Curie temperature, d 33 ) and mechanical (flexural strength, fracture toughness, hardness) properties were studied. We obtained ∼ 94% dense BZT-BCT reinforced with Al 2 O 3 nano-oxide at 1300℃ without degrading electrical properties (dielectric constant (4850), low dissipation factor (0.0242)) and superior mechanical properties (flexural strength - 60.3 MPa, Vickers hardness-750-800 MPa). (author)

  3. Electrically Conductive and Protective Coating for Planar SOFC Stacks

    Energy Technology Data Exchange (ETDEWEB)

    Choi, Jung-Pyung; Stevenson, Jeffry W.

    2017-12-04

    Ferritic stainless steels are preferred interconnect materials for intermediate temperature SOFCs because of their resistance to oxidation, high formability and low cost. However, their protective oxide layer produces Cr-containing volatile species at SOFC operating temperatures and conditions, which can cause cathode poisoning. Electrically conducting spinel coatings have been developed to prevent cathode poisoning and to maintain an electrically conductive pathway through SOFC stacks. However, this coating is not compatible with the formation of stable, hermetic seals between the interconnect frame component and the ceramic cell. Thus, a new aluminizing process has been developed by PNNL to enable durable sealing, prevent Cr evaporation, and maintain electrical insulation between stack repeat units. Hence, two different types of coating need to have stable operation of SOFC stacks. This paper will focus on the electrically conductive coating process. Moreover, an advanced coating process, compatible with a non-electrically conductive coating will be

  4. Role of Electrical Double Layer Structure in Ionic Liquid Gated Devices.

    Science.gov (United States)

    Black, Jennifer M; Come, Jeremy; Bi, Sheng; Zhu, Mengyang; Zhao, Wei; Wong, Anthony T; Noh, Joo Hyon; Pudasaini, Pushpa R; Zhang, Pengfei; Okatan, Mahmut Baris; Dai, Sheng; Kalinin, Sergei V; Rack, Philip D; Ward, Thomas Zac; Feng, Guang; Balke, Nina

    2017-11-22

    Ionic liquid gating of transition metal oxides has enabled new states (magnetic, electronic, metal-insulator), providing fundamental insights into the physics of strongly correlated oxides. However, despite much research activity, little is known about the correlation of the structure of the liquids in contact with the transition metal oxide surface, its evolution with the applied electric potential, and its correlation with the measured electronic properties of the oxide. Here, we investigate the structure of an ionic liquid at a semiconducting oxide interface during the operation of a thin film transistor where the electrical double layer gates the device using experiment and theory. We show that the transition between the ON and OFF states of the amorphous indium gallium zinc oxide transistor is accompanied by a densification and preferential spatial orientation of counterions at the oxide channel surface. This process occurs in three distinct steps, corresponding to ion orientations, and consequently, regimes of different electrical conductivity. The reason for this can be found in the surface charge densities on the oxide surface when different ion arrangements are present. Overall, the field-effect gating process is elucidated in terms of the interfacial ionic liquid structure, and this provides unprecedented insight into the working of a liquid gated transistor linking the nanoscopic structure to the functional properties. This knowledge will enable both new ionic liquid design as well as advanced device concepts.

  5. Properties of Co-deposited indium tin oxide and zinc oxide films using a bipolar pulse power supply and a dual magnetron sputter source

    International Nuclear Information System (INIS)

    Hwang, Man-Soo; Seob Jeong, Heui; Kim, Won Mok; Seo, Yong Woon

    2003-01-01

    Multilayer coatings consisting of metal layers sandwiched between transparent conducting oxide layers are widely used for flat panel display electrodes and electromagnetic shield coatings for plasma displays, due to their high electrical conductivity and light transmittance. The electrical and optical properties of these multilayer films depend largely on the surface characteristics of the transparent conducting oxide thin films. A smoother surface on the transparent conducting oxide thin films makes it easier for the metal layer to form a continuous film, thus resulting in a higher conductivity and visible light transmittance. Indium tin oxide (ITO) and zinc oxide (ZnO) films were co-deposited using a dual magnetron sputter and a bipolar pulse power supply to decrease the surface roughness of the transparent conducting oxide films. The symmetric pulse mode of the power supply was used to simultaneously sputter an In 2 O 3 (90 wt %) : SnO 2 (10 wt %) target and a ZnO target. We varied the duty of the pulses to control the ratio of ITO : ZnO in the thin films. The electrical and optical properties of the films were studied, and special attention was paid to the surface roughness and the crystallinity of the films. By co-depositing ITO and ZnO at a pulse duty ratio of ITO:ZnO=45:45 using a dual magnetron sputter and a bipolar pulse power supply, we were able to obtain amorphous transparent conducting oxide films with a very smooth surface which had a Zn-rich buffer layer under a In-rich surface layer. All of the films exhibited typical electrical and optical properties of transparent conducting oxide films deposited at room temperature

  6. Enhanced low-temperature oxidation of zirconium alloys under irradiation

    International Nuclear Information System (INIS)

    Cox, B.; Fidleris, V.

    1989-01-01

    The linear growth of relatively thick (>300 nm) interference-colored oxide films on zirconium alloy specimens exposed in the Advanced Test Reactor (ATR) coolant at ≤55 o C was unexpected. Initial ideas were that this was a photoconduction effect. Experiments to study photoconduction in thin anodic zirconium oxide (ZrO 2 ) films in the laboratory were initiated to provide background data. It was found that, in the laboratory, provided a high electric field was maintained across the oxide during ultraviolet (UV) irradiation, enhanced growth of oxide occurred in the irradiated area. Similarly enhanced growth could be obtained on thin thermally formed oxide films that were immersed in an electrolyte with a high electric field superimposed. This enhanced growth was found to be caused by the development of porosity in the barrier oxide layer by an enhanced local dissolution and reprecipitation process during UV irradiation. Similar porosity was observed in the oxide films on the ATR specimens. Since it is not thought that a high electric field could have been present in this instance, localized dissolution of fast-neutron primary recoil tracks may be the operative mechanism. In all instances, the specimens attempt to maintain the normal barrier-layer oxide thickness, which causes the additional oxide growth. Similar mechanisms may have operated during the formation of thick loosely adherent, porous oxides in homogeneous reactor solutions under irradiation, and may be the cause of enhanced oxidation of zirconium alloys in high-temperature water-cooled reactors in some water chemistries. (author)

  7. Bismuth iron oxide thin films using atomic layer deposition of alternating bismuth oxide and iron oxide layers

    Energy Technology Data Exchange (ETDEWEB)

    Puttaswamy, Manjunath; Vehkamäki, Marko [University of Helsinki, Department of Chemistry, P.O. Box 55, FI-00014 Helsinki (Finland); Kukli, Kaupo, E-mail: kaupo.kukli@helsinki.fi [University of Helsinki, Department of Chemistry, P.O. Box 55, FI-00014 Helsinki (Finland); University of Tartu, Institute of Physics, W. Ostwald 1, EE-50411 Tartu (Estonia); Dimri, Mukesh Chandra [National Institute of Chemical Physics and Biophysics, Akadeemia tee 23, EE-12618 Tallinn (Estonia); Kemell, Marianna; Hatanpää, Timo; Heikkilä, Mikko J. [University of Helsinki, Department of Chemistry, P.O. Box 55, FI-00014 Helsinki (Finland); Mizohata, Kenichiro [University of Helsinki, Department of Physics, P.O. Box 64, FI-00014 Helsinki (Finland); Stern, Raivo [National Institute of Chemical Physics and Biophysics, Akadeemia tee 23, EE-12618 Tallinn (Estonia); Ritala, Mikko; Leskelä, Markku [University of Helsinki, Department of Chemistry, P.O. Box 55, FI-00014 Helsinki (Finland)

    2016-07-29

    Bismuth iron oxide films with varying contributions from Fe{sub 2}O{sub 3} or Bi{sub 2}O{sub 3} were prepared using atomic layer deposition. Bismuth (III) 2,3-dimethyl-2-butoxide, was used as the bismuth source, iron(III) tert-butoxide as the iron source and water vapor as the oxygen source. The films were deposited as stacks of alternate Bi{sub 2}O{sub 3} and Fe{sub 2}O{sub 3} layers. Films grown at 140 °C to the thickness of 200–220 nm were amorphous, but crystallized upon post-deposition annealing at 500 °C in nitrogen. Annealing of films with intermittent bismuth and iron oxide layers grown to different thicknesses influenced their surface morphology, crystal structure, composition, electrical and magnetic properties. Implications of multiferroic performance were recognized in the films with the remanent charge polarization varying from 1 to 5 μC/cm{sup 2} and magnetic coercivity varying from a few up to 8000 A/m. - Highlights: • Bismuth iron oxide thin films were grown by atomic layer deposition at 140 °C. • The major phase formed in the films upon annealing at 500 °C was BiFeO{sub 3}. • BiFeO{sub 3} films and films containing excess Bi favored electrical charge polarization. • Slight excess of iron oxide enhanced saturative magnetization behavior.

  8. Rare Earth Oxide Thin Films

    CERN Document Server

    Fanciulli, Marco

    2007-01-01

    Thin rare earth (RE) oxide films are emerging materials for microelectronic, nanoelectronic, and spintronic applications. The state-of-the-art of thin film deposition techniques as well as the structural, physical, chemical, and electrical properties of thin RE oxide films and of their interface with semiconducting substrates are discussed. The aim is to identify proper methodologies for the development of RE oxides thin films and to evaluate their effectiveness as innovative materials in different applications.

  9. Analysis of chemical bond states and electrical properties of stacked AlON/HfO{sub 2} gate oxides formed by using a layer-by-layer technique

    Energy Technology Data Exchange (ETDEWEB)

    Choi, Wonjoon; Lee, Jonghyun; Yang, Jungyup; Kim, Chaeok; Hong, Jinpyo; Nahm, Tschanguh; Byun, Byungsub; Kim, Moseok [Hanyang University, Seoul (Korea, Republic of)

    2006-06-15

    Stacked AlON/HfO{sub 2} thin films for gate oxides in metal-oxide-semiconductor devices are successfully prepared on Si substrates by utilizing a layer-by-layer technique integrated with an off-axis RF remote plasma sputtering process at room temperature. This off-axis structure is designed to improve the uniformity and the quality of gate oxide films. Also, a layer-by-layer technique is used to control the interface layer between the gate oxide and the Si substrate. The electrical properties of our stacked films are characterized by using capacitance versus voltage and leakage current versus voltage measurements. The stacked AlON/HfO{sub 2} gate oxide exhibits a low leakage current of about 10{sup -6} A/cm{sup 2} and a high dielectric constant value of 14.26 by effectively suppressing the interface layer between gate oxide and Si substrate. In addition, the chemical bond states and the optimum thickness of each AlON and HfO{sub 2} thin film are analyzed using X-ray photoemission spectroscopy and transmission electron microscopy measurement.

  10. The Effect of Varying Ultrafast Pulse Laser Energies on the Electrical Properties of Reduced Graphene Oxide Sheets in Solution

    Science.gov (United States)

    Ibrahim, Khaled H.; Irannejad, Mehrdad; Wales, Benjamin; Sanderson, Joseph; Musselman, Kevin P.; Yavuz, Mustafa

    2018-02-01

    Laser treatment of graphene oxide solution among other techniques is a well-established technique for producing reduced graphene sheets. However, production of high-quality ultra-low sheet resistance reduced graphene oxide (rGO) sheets in solution has been a challenge due to their high degree of randomness, defect-rich medium, and lack of controlability. Recent studies lack an in-depth analytic comparison of laser treatment parameters that yield the highest quality rGO sheets with a low defect ratio. Hence, in this study, we implement a comprehensive comparison of laser treatment parameters and their effect on the yielded rGO sheets from an electronic and physical standpoint. Ultra-low sheet resistance graphene oxide sheets were fabricated using ultrafast laser irradiation with different laser pulse energies in the range of 0.25-2 mJ. Laser treatment for 10 min using a pulse energy of 1 mJ resulted in an increase in the defect spacing, accompanied by a large red shift in the optical absorption of the C=C bond, indicating significant restoration of the s p 2 carbon bonds. These enhancements resulted in a significant reduction in the electrical resistance of the rGO flakes (up to 2 orders of magnitude), raising the electron mobility of the films produced using the irradiated graphene oxide a step closer to that of pristine graphene films. From this study, we can also deduce which exposure regimes result in the fabrication of quantum dots and continuous defect-free films.

  11. Adaptive oxide electronics: A review

    Science.gov (United States)

    Ha, Sieu D.; Ramanathan, Shriram

    2011-10-01

    Novel information processing techniques are being actively explored to overcome fundamental limitations associated with CMOS scaling. A new paradigm of adaptive electronic devices is emerging that may reshape the frontiers of electronics and enable new modalities. Creating systems that can learn and adapt to various inputs has generally been a complex algorithm problem in information science, albeit with wide-ranging and powerful applications from medical diagnosis to control systems. Recent work in oxide electronics suggests that it may be plausible to implement such systems at the device level, thereby drastically increasing computational density and power efficiency and expanding the potential for electronics beyond Boolean computation. Intriguing possibilities of adaptive electronics include fabrication of devices that mimic human brain functionality: the strengthening and weakening of synapses emulated by electrically, magnetically, thermally, or optically tunable properties of materials.In this review, we detail materials and device physics studies on functional metal oxides that may be utilized for adaptive electronics. It has been shown that properties, such as resistivity, polarization, and magnetization, of many oxides can be modified electrically in a non-volatile manner, suggesting that these materials respond to electrical stimulus similarly as a neural synapse. We discuss what device characteristics will likely be relevant for integration into adaptive platforms and then survey a variety of oxides with respect to these properties, such as, but not limited to, TaOx, SrTiO3, and Bi4-xLaxTi3O12. The physical mechanisms in each case are detailed and analyzed within the framework of adaptive electronics. We then review theoretically formulated and current experimentally realized adaptive devices with functional oxides, such as self-programmable logic and neuromorphic circuits. Finally, we speculate on what advances in materials physics and engineering may

  12. on THICKNESS OF COPPER (|) OXIDE

    African Journals Online (AJOL)

    2006-12-20

    Dec 20, 2006 ... known materials to be used as semiconductor devices. The oxide is. Observed to be an attractive starting material for the production of solar cells for low cost terrestrial conversion of solar energy to electricity. Copper (I) oxide is one Of the earliest known photovoltaic materials and the first in which the ...

  13. Electrical properties of phosphate glasses

    International Nuclear Information System (INIS)

    Mogus-Milankovic, A; Santic, A; Reis, S T; Day, D E

    2009-01-01

    Investigation of the electrical properties of phosphate glasses where transition metal oxide such as iron oxide is the network former and network modifier is presented. Phosphate glasses containing iron are electronically conducting glasses where the polaronic conduction is due to the electron hopping from low to high iron valence state. The identification of structural defects caused by ion/polaron migration, the analysis of dipolar states and electrical conductivity in iron phosphate glasses containing various alkali and mixed alkali ions was performed on the basis of the impedance spectroscopy (IS). The changes in electrical conductivity from as-quenched phosphate glass to fully crystallized glass (glass-ceramics) by IS are analyzed. A change in the characteristic features of IS follows the changes in glass and crystallized glass network. Using IS, the contribution of glass matrix, crystallized grains and grain boundary to the total electrical conductivity for iron phosphate glasses was analyzed. It was shown that decrease in conductivity is caused by discontinuities in the conduction pathways as a result of the disruption of crystalline network where two or more crystalline phases are formed. Also, phosphate-based glasses offer a unique range of biomaterials, as they form direct chemical bonding with hard/soft tissue. The surface charges of bioactive glasses are recognized to be the most important factors in determining biological responses. The improved bioactivity of the bioactive glasses as a result of the effects of the surface charges generated by electrical polarization is discussed.

  14. High permittivity materials for oxide gate stack in Ge-based metal oxide semiconductor capacitors

    Energy Technology Data Exchange (ETDEWEB)

    Molle, Alessandro, E-mail: alessandro.molle@mdm.infm.i [Laboratorio Nazionale MDM, CNR-INFM, via C. Olivetti 2, 20041 Agrate Brianza, Milano (Italy); Baldovino, Silvia [Laboratorio Nazionale MDM, CNR-INFM, via C. Olivetti 2, 20041 Agrate Brianza, Milano (Italy); Dipartimento di Scienza dei Materiali, Universita degli Studi di Milano Bicocca, Milano (Italy); Spiga, Sabina [Laboratorio Nazionale MDM, CNR-INFM, via C. Olivetti 2, 20041 Agrate Brianza, Milano (Italy); Fanciulli, Marco [Laboratorio Nazionale MDM, CNR-INFM, via C. Olivetti 2, 20041 Agrate Brianza, Milano (Italy); Dipartimento di Scienza dei Materiali, Universita degli Studi di Milano Bicocca, Milano (Italy)

    2010-01-01

    In the effort to ultimately shrink the size of logic devices towards a post-Si era, the integration of Ge as alternative channel material for high-speed p-MOSFET devices and the concomitant coupling with high permittivity dielectrics (high-k) as gate oxides is currently a key-challenge in microelectronics. However, the Ge option still suffers from a number of unresolved drawbacks and open issues mainly related to the thermodynamic and electrical compatibility of Ge substrates with high-k gate stack. Strictly speaking, two main concerns can be emphasized. On one side is the dilemma on which chemical/physical passivation is more suitable to minimize the unavoidable presence of electrically active defects at the oxide/semiconductor interface. On the other side, overcoming the SiO{sub 2} gate stack opens the route to a number of potentially outperforming high-k oxides. Two deposition approaches were here separately adopted to investigate the high-k oxide growth on Ge substrates, the molecular beam deposition (MBD) of Gd{sub 2}O{sub 3} and the atomic layer deposition (ALD) of HfO{sub 2}. In the MBD framework epitaxial and amorphous Gd{sub 2}O{sub 3} films were grown onto GeO{sub 2}-passivated Ge substrates. In this case, Ge passivation was achieved by exploiting the Ge{sup 4+} bonding state in GeO{sub 2} ultra-thin interface layers intentionally deposited in between Ge and the high-k oxide by means of atomic oxygen exposure to Ge. The composition of the interface layer has been characterized as a function of the oxidation temperature and evidence of Ge dangling bonds at the GeO{sub 2}/Ge interface has been reported. Finally, the electrical response of MOS capacitors incorporating Gd{sub 2}O{sub 3} and GeO{sub 2}-passivated Ge substrates has been checked by capacitance-voltage measurements. On the other hand, the structural and electrical properties of HfO{sub 2} films grown by ALD on Ge by using different oxygen precursors, i.e. H{sub 2}O, Hf(O{sup t}Bu){sub 2}(mmp

  15. Novel electrical energy storage system based on reversible solid oxide cells: System design and operating conditions

    Science.gov (United States)

    Wendel, C. H.; Kazempoor, P.; Braun, R. J.

    2015-02-01

    Electrical energy storage (EES) is an important component of the future electric grid. Given that no other widely available technology meets all the EES requirements, reversible (or regenerative) solid oxide cells (ReSOCs) working in both fuel cell (power producing) and electrolysis (fuel producing) modes are envisioned as a technology capable of providing highly efficient and cost-effective EES. However, there are still many challenges and questions from cell materials development to system level operation of ReSOCs that should be addressed before widespread application. This paper presents a novel system based on ReSOCs that employ a thermal management strategy of promoting exothermic methanation within the ReSOC cell-stack to provide thermal energy for the endothermic steam/CO2 electrolysis reactions during charging mode (fuel producing). This approach also serves to enhance the energy density of the stored gases. Modeling and parametric analysis of an energy storage concept is performed using a physically based ReSOC stack model coupled with thermodynamic system component models. Results indicate that roundtrip efficiencies greater than 70% can be achieved at intermediate stack temperature (680 °C) and elevated stack pressure (20 bar). The optimal operating condition arises from a tradeoff between stack efficiency and auxiliary power requirements from balance of plant hardware.

  16. Magnetron sputtered transparent conductive zinc-oxide stabilized amorphous indium oxide thin films on polyethylene terephthalate substrates at ambient temperature

    International Nuclear Information System (INIS)

    Yan, Y.; Zhang, X.-F.; Ding, Y.-T.

    2013-01-01

    Amorphous transparent conducting zinc-oxide stabilized indium oxide thin films, named amorphous indium zinc oxide (a-IZO), were deposited by direct current magnetron sputtering at ambient temperature on flexible polyethylene terephthalate substrates. It has been demonstrated that the electrical resistivity could attain as low as ∼ 5 × 10 −4 Ω cm, which was noticeably lower than amorphous indium tin oxide films prepared at the same condition, while the visible transmittance exceeded 84% with the refractive index of 1.85–2.00. In our experiments, introduction of oxygen gas appeared to be beneficial to the improvement of the transparency and electrical conductivity. Both free carrier absorption and indirect transition were observed and Burstein–Moss effect proved a-IZO to be a degenerated amorphous semiconductor. However, the linear relation between the optical band gap and the band tail width which usually observed in covalent amorphous semiconductor such as a-Si:H was not conserved. Besides, porosity could greatly determine the resistivity and optical constants for the thickness variation at this deposition condition. Furthermore, a broad photoluminescence peak around 510 nm was identified when more than 1.5 sccm oxygen was introduced. - Highlights: ► Highly conducting amorphous zinc-oxide stabilized indium oxide thin films were prepared. ► The films were fabricated on polyethylene terephthalate at ambient temperature. ► Introduction of oxygen can improve the transparency and electrical conductivity. ► The linear relation between optical band gap and band tail width was not conserved

  17. Effect of Cr doping on the structural, morphological, optical and electrical properties of indium tin oxide films

    Science.gov (United States)

    Mirzaee, Majid; Dolati, Abolghasem

    2015-03-01

    We report on the preparation and characterization of high-purity chromium (0.5-2.5 at.%)-doped indium tin oxide (ITO, In:Sn = 90:10) films deposited by sol-gel-mediated dip coating. The effects of different Cr-doping contents on structural, morphological, optical and electrical properties of the films were characterized by means of X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), field emission scanning electron microscopy (FESEM), UV-Vis spectroscopy and four-point probe methods. XRD showed high phase purity cubic In2O3 and indicated a contraction of the lattice with Cr doping. FESEM micrographs show that grain size decreased with increasing the Cr-doping content. A method to determine chromium species in the sample was developed through the decomposition of the Cr 2 p XPS spectrum in Cr6+ and Cr3+ standard spectra. Optical and electrical studies revealed that optimum opto-electronic properties, including minimum sheet resistance of 4,300 Ω/Sq and an average optical transmittance of 85 % in the visible region with a band gap of 3.421 eV, were achieved for the films doped with Cr-doping content of 2 at.%.

  18. Electrical properties of the LaLi y Co1 - y O3 - δ (0 ≤ y ≤ 0.10) oxides

    Science.gov (United States)

    Vecherskii, S. I.; Konopel'ko, M. A.; Batalov, N. N.; Antonov, B. D.; Reznitskikh, O. G.; Yaroslavtseva, T. V.

    2017-08-01

    The effect of the Li ion concentration on the phase composition, the electrical conductivity, and the thermoelectric power of the LaLi y Co1- y O3-δ (0 ≤ y ≤ 0.1) oxides synthesized by cocrystallization has been studied. It is found that the region of the perovskite-like solid solution LaLi y Co1- y O3-δ is no higher than y = 0.037. In the temperature range 300-1020 K, lithium alloying leads to an increase in the electrical conductivity and a decrease in the positive thermoelectric power of the single-phase samples compared to LaCoO3-δ. The results are discussed using the density of states model proposed by Senarus Rodriguez and Goodenough for LaCoO3-δ and La1- x Sr x CoO3-δ and using the Mott theory of noncrystalline substances.

  19. Electrical features of an amorphous indium-gallium-zinc-oxide film transistor using a double active matrix with different oxygen contents

    International Nuclear Information System (INIS)

    Koo, Ja Hyun; Kang, Tae Sung; Hong, Jin Pyo

    2012-01-01

    The electrical characteristics of amorphous indium-gallium-zinc-oxide (a-IGZO) thin film transistor (TFTs) are systematically studied using a double a-IGZO active layer that is composed of a-IGZO x (oxygen-ion-poor region) and a-IGZO y (oxygen-ion-rich-region). An active layer is designed to have a serially-stacked bi-layer matrix with different oxygen contents, providing the formation of different electron conduction channels. Two different oxygen contents in the active layer are obtained by varying the O 2 partial pressure during sputtering. The a-IGZO TFT based on a double active layer exhibits a high mobility of 9.1 cm 2 /Vsec, a threshold voltage (V T ) of 16.5 V, and ΔV T shifts of less than 1.5 V under gate voltage stress. A possible electrical sketch for the double active layer channel is also discussed.

  20. Grain-size effect on the electrical properties of nanocrystalline indium tin oxide thin films

    Energy Technology Data Exchange (ETDEWEB)

    Lee, Jong Hoon [Korea Research Institute of Standards and Science, 267 Gajeong-Ro, Yuseong-Gu, Daejeon 305-340 (Korea, Republic of); Kim, Young Heon, E-mail: young.h.kim@kriss.re.kr [Korea Research Institute of Standards and Science, 267 Gajeong-Ro, Yuseong-Gu, Daejeon 305-340 (Korea, Republic of); University of Science & Technology, 217 Gajeong-Ro, Yuseong-Gu, Daejeon 305-350 (Korea, Republic of); Ahn, Sang Jung [Korea Research Institute of Standards and Science, 267 Gajeong-Ro, Yuseong-Gu, Daejeon 305-340 (Korea, Republic of); University of Science & Technology, 217 Gajeong-Ro, Yuseong-Gu, Daejeon 305-350 (Korea, Republic of); Ha, Tae Hwan [University of Science & Technology, 217 Gajeong-Ro, Yuseong-Gu, Daejeon 305-350 (Korea, Republic of); Future Biotechnology Research Division, Korea Research Institute of Bioscience and Biotechnology (KRIBB), 125 Gwahak-ro, Yuseong-Gu, Daejeon 305-806 (Korea, Republic of); Kim, Hong Seung [Department of Nano Semiconductor Engineering, Korea Maritime and Ocean University, 727 Taejong-Ro, Busan 606-791 (Korea, Republic of)

    2015-09-15

    Highlights: • Nanometer-sized small grains were observed in the ITO thin films. • The grain size increased as the post-thermal annealing temperature increased. • The mobility of ITO thin films increased with increasing grain size. • The ITO film annealed at 300 °C was an amorphous phase, while the others were polycrystalline structure. - Abstract: In this paper, we demonstrate the electrical properties, depending on grain size, of nanocrystalline indium tin oxide (ITO) thin films prepared with a solution process. The size distributions of nanometer-sized ITO film grains increased as the post-annealing temperature increased after deposition; the grain sizes were comparable with the calculated electron mean free path. The mobility of ITO thin films increased with increasing grain size; this phenomenon was explained by adopting the charge-trapping model for grain boundary scattering. These findings suggest that it is possible to improve mobility by reducing the number of trapping sites at the grain boundary.

  1. Dosimeter Design Program

    Science.gov (United States)

    2015-01-05

    monitor the radiation environment in a geosynchronous satellite. 15. SUBJECT TERMS Radiation testing, Cobalt, Microcontroller 16. SECURITY...electronics including: an Aeroflex 8051 microcontroller , a Maxwell Electrically Erasable Programmable Read-Only Memory (EEPROM), Texas Instrument analog

  2. On the Defect Chemistry, Electrical Properties and Electrochemical Performances As Solid Oxide Fuel Cell Cathode Materials of New La-(Sr/Vac)-Co-Ti-O Perovskites

    DEFF Research Database (Denmark)

    García-Alvarado, Flaviano; Gómez-Pérez, Alejandro; Pérez-Flores, Juan Carlos

    2015-01-01

    Perovskite-type oxides are well known materials that have been proposed as electrodes and electrolytes for solid oxide fuel cells (SOFCs). The structure, which is referred to the ABO3 stoichiometry, can accommodate many different transition metal ions in the B-site; its electronic conductivity...... materials with valuable properties for SOFCs. We have analysed the effect of La3+ by Sr2+ substitution and vacancies creation in several double perovskites, La2MTiO6 (M = Co, Ni, Cu). Defect chemistry and electrical behavior have been investigated in order to unveil the nature of charge carriers....... Electrochemical performances have been assessed through polarization resistance measurements. In this communication we present the results regarding La2SrTiO6 perovskites. La/Sr substitution in La2-xSrxCoTiO6-δ produces Co2+ to Co3+ oxidation while vacancies in La2-xCoTiO6-δ yield Co2+ oxidation for low A...

  3. Bleeding Efficiency, Microbiological Quality and Oxidative Stability of Meat from Goats Subjected to Slaughter without Stunning in Comparison with Different Methods of Pre-Slaughter Electrical Stunning.

    Science.gov (United States)

    Sabow, Azad Behnan; Zulkifli, Idrus; Goh, Yong Meng; Ab Kadir, Mohd Zainal Abidin; Kaka, Ubedullah; Imlan, Jurhamid Columbres; Abubakar, Ahmed Abubakar; Adeyemi, Kazeem Dauda; Sazili, Awis Qurni

    2016-01-01

    The influence of pre-slaughter electrical stunning techniques and slaughter without stunning on bleeding efficiency and shelf life of chevon during a 14 d postmortem aging were assessed. Thirty two Boer crossbred bucks were randomly assigned to four slaughtering techniques viz slaughter without stunning (SWS), low frequency head-only electrical stunning (LFHO; 1 A for 3 s at a frequency of 50 Hz), low frequency head-to-back electrical stunning (LFHB; 1 A for 3 s at a frequency of 50 Hz) and high frequency head-to-back electrical stunning (HFHB; 1 A for 3 s at a frequency of 850 Hz). The SWS, LFHO and HFHB goats had higher (pmeat had higher (pmeat compared to those from SWS, LFHO and HFHB after 3 d postmortem. Results indicate that the low bleed-out in LFHB lowered the lipid oxidative stability and microbiological quality of chevon during aging.

  4. Influence of addition of indium and of post-annealing on structural, electrical and optical properties of gallium-doped zinc oxide thin films deposited by direct-current magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Pham, Duy Phong [Laboratory of Advanced Materials, University of Science, Vietnam National University, HoChiMinh (Viet Nam); College of Information and Communication Engineering, Sungkyunkwan University, Suwon 440-746 (Korea, Republic of); Nguyen, Huu Truong [Laboratory of Advanced Materials, University of Science, Vietnam National University, HoChiMinh (Viet Nam); Phan, Bach Thang [Laboratory of Advanced Materials, University of Science, Vietnam National University, HoChiMinh (Viet Nam); Faculty of Materials Science, University of Science, Vietnam National University, HoChiMinh (Viet Nam); Hoang, Van Dung [Laboratory of Advanced Materials, University of Science, Vietnam National University, HoChiMinh (Viet Nam); Maenosono, Shinya [School of Materials Science, Japan Advanced Institute of Science and Technology, 1-1 Asahidai, Nomi, Ishikawa 923-1292 (Japan); Tran, Cao Vinh, E-mail: tcvinh@hcmus.edu.vn [Laboratory of Advanced Materials, University of Science, Vietnam National University, HoChiMinh (Viet Nam)

    2015-05-29

    In this study, both gallium-doped zinc oxide (GZO) and indium-added gallium-doped zinc oxide (IGZO) thin films were deposited on commercial glasses by magnetron dc-sputtering in argon atmosphere. The crystal structure, electrical conductivity and optical transmission of as-deposited as well as post-annealed thin films of both GZO and IGZO were investigated for comparison. A small amount of indium introduced into GZO thin films had improved their polycrystalline structure and increased their electrical conductivity by over 29%. All obtained GZO and IGZO thin films have strong [002] crystalline direction, a characteristic orientation of ZnO thin films. Although post-annealed in air at high temperatures up to 500 °C, IGZO thin films still had very low sheet resistance of 6.6 Ω/□. Furthermore, they had very high optical transmission of over 80% in both visible and near-infrared regions. - Highlights: • Doping 0.1 at.% indium enhanced crystalline, electrical properties of GZO films. • The mobility of IGZO films was 25% higher than that of GZO films. • The IGZO films will be potential materials for transparent conducting electrodes.

  5. Influence of addition of indium and of post-annealing on structural, electrical and optical properties of gallium-doped zinc oxide thin films deposited by direct-current magnetron sputtering

    International Nuclear Information System (INIS)

    Pham, Duy Phong; Nguyen, Huu Truong; Phan, Bach Thang; Hoang, Van Dung; Maenosono, Shinya; Tran, Cao Vinh

    2015-01-01

    In this study, both gallium-doped zinc oxide (GZO) and indium-added gallium-doped zinc oxide (IGZO) thin films were deposited on commercial glasses by magnetron dc-sputtering in argon atmosphere. The crystal structure, electrical conductivity and optical transmission of as-deposited as well as post-annealed thin films of both GZO and IGZO were investigated for comparison. A small amount of indium introduced into GZO thin films had improved their polycrystalline structure and increased their electrical conductivity by over 29%. All obtained GZO and IGZO thin films have strong [002] crystalline direction, a characteristic orientation of ZnO thin films. Although post-annealed in air at high temperatures up to 500 °C, IGZO thin films still had very low sheet resistance of 6.6 Ω/□. Furthermore, they had very high optical transmission of over 80% in both visible and near-infrared regions. - Highlights: • Doping 0.1 at.% indium enhanced crystalline, electrical properties of GZO films. • The mobility of IGZO films was 25% higher than that of GZO films. • The IGZO films will be potential materials for transparent conducting electrodes

  6. Crystal growth under external electric fields

    International Nuclear Information System (INIS)

    Uda, Satoshi; Koizumi, Haruhiko; Nozawa, Jun; Fujiwara, Kozo

    2014-01-01

    This is a review article concerning the crystal growth under external electric fields that has been studied in our lab for the past 10 years. An external field is applied electrostatically either through an electrically insulating phase or a direct injection of an electric current to the solid-interface-liquid. The former changes the chemical potential of both solid and liquid and controls the phase relationship while the latter modifies the transport and partitioning of ionic solutes in the oxide melt during crystallization and changes the solute distribution in the crystal

  7. Crystal growth under external electric fields

    Energy Technology Data Exchange (ETDEWEB)

    Uda, Satoshi; Koizumi, Haruhiko; Nozawa, Jun; Fujiwara, Kozo [Institute for Materials Research, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai, Miyagi 980-8577 (Japan)

    2014-10-06

    This is a review article concerning the crystal growth under external electric fields that has been studied in our lab for the past 10 years. An external field is applied electrostatically either through an electrically insulating phase or a direct injection of an electric current to the solid-interface-liquid. The former changes the chemical potential of both solid and liquid and controls the phase relationship while the latter modifies the transport and partitioning of ionic solutes in the oxide melt during crystallization and changes the solute distribution in the crystal.

  8. Evaluation of the properties of iron oxide-filled castor oil polyurethane

    Directory of Open Access Journals (Sweden)

    Eleonora Mussatti

    2013-02-01

    Full Text Available The aim of this study was to obtain and evaluate the electrical, thermal and mechanical properties of iron oxide-filled castor oil polyurethane (PU/Fe2O3. The iron oxide used in this study was a residue derived from the steel pickling process of a Brazilian steel rolling industry. Polymeric composites with different iron oxide volume fractions (2.5, 5.0, 7.5, 10.0 and 12.5% were prepared through the casting process followed by compression molding at room temperature. The composites were analyzed by FTIR, XRD and densities, tensile strength, Young's modulus, electrical and thermal conductivities measurements. By increasing the iron oxide content, the apparent density, tensile strength, Young's modulus and electrical conductivity values of the composites were also increased. The iron oxide additions did not change significantly the value of thermal conductivity (from 0.191 W.mK-1 for PU up to 0.340 W.mK-1 for PU enriched with 12.5% v/v of iron oxide. Thus, even at the higher iron oxide concentration, the compounds as well as the pure polyurethane can be classified as thermal insulators.

  9. Evaluation of the Properties of Iron Oxide-Filled Castor Oil Polyurethane

    Directory of Open Access Journals (Sweden)

    Eleonora Mussatti

    2012-01-01

    Full Text Available The aim of this study was to obtain and evaluate the electrical, thermal and mechanical properties of iron oxide-filled castor oil polyurethane (PU/Fe2O3. The iron oxide used in this study was a residue derived from the steel pickling process of a Brazilian steel rolling industry. Polymeric composites with different iron oxide volume fractions (2.5, 5.0, 7.5, 10.0 and 12.5% were prepared through the casting process followed by compression molding at room temperature. The composites were analyzed by FTIR, XRD and densities, tensile strength, Young's modulus, electrical and thermal conductivities measurements. By increasing the iron oxide content, the apparent density, tensile strength, Young's modulus and electrical conductivity values of the composites were also increased. The iron oxide additions did not change significantly the value of thermal conductivity (from 0.191 W.mK-1 for PU up to 0.340 W.mK-1 for PU enriched with 12.5% v/v of iron oxide. Thus, even at the higher iron oxide concentration, the compounds as well as the pure polyurethane can be classified as thermal insulators.

  10. Simulation of thermal stresses in anode-supported solid oxide fuel cell stacks. Part II: Loss of gas-tightness, electrical contact and thermal buckling

    Science.gov (United States)

    Nakajo, Arata; Wuillemin, Zacharie; Van herle, Jan; Favrat, Daniel

    Structural stability issues in planar solid oxide fuel cells arise from the mismatch between the coefficients of thermal expansion of the components. The stress state at operating temperature is the superposition of several contributions, which differ depending on the component. First, the cells accumulate residual stresses due to the sintering phase during the manufacturing process. Further, the load applied during assembly of the stack to ensure electric contact and flatten the cells prevents a completely stress-free expansion of each component during the heat-up. Finally, thermal gradients cause additional stresses in operation. The temperature profile generated by a thermo-electrochemical model implemented in an equation-oriented process modelling tool (gPROMS) was imported into finite-element software (ABAQUS) to calculate the distribution of stress and contact pressure on all components of a standard solid oxide fuel cell repeat unit. The different layers of the cell in exception of the cathode, i.e. anode, electrolyte and compensating layer were considered in the analysis to account for the cell curvature. Both steady-state and dynamic simulations were performed, with an emphasis on the cycling of the electrical load. The study includes two different types of cell, operation under both thermal partial oxidation and internal steam-methane reforming and two different initial thicknesses of the air and fuel compressive sealing gaskets. The results generated by the models are presented in two papers: Part I focuses on cell cracking. In the present paper, Part II, the occurrences of loss of gas-tightness in the compressive gaskets and/or electrical contact in the gas diffusion layer were identified. In addition, the dependence on temperature of both coefficients of thermal expansion and Young's modulus of the metallic interconnect (MIC) were implemented in the finite-element model to compute the plastic deformation, while the possibilities of thermal buckling

  11. Structural phase transition and erasable optically memorized effect in layered γ-In2Se3 crystals

    International Nuclear Information System (INIS)

    Ho, Ching-Hwa; Chen, Ying-Cen; Pan, Chia-Chi

    2014-01-01

    We have grown In 2 Se 3 layered-type crystals using chemical vapor transport method with ICl 3 as the transport agent. The as-grown crystals show two different color groups of black shiny for α-phase In 2 Se 3 and red to yellow for γ-phase In 2 Se 3 . High-resolution transmission electron micro scopy verifies crystalline state and structural polytype of the as-grown In 2 Se 3 . The results indicate that the α-In 2 Se 3 crystals present more crystalline states than those of the other amorphous γ-In 2 Se 3 . The amorphous effect on the advancing of optoelectronic property of γ-In 2 Se 3 shows erasable optical-memorized effect in the disordered and polycrystalline γ-In 2 Se 3 layers. Laser-induced photodarkening and annealed-recovery test verified that a reversible structural-phase transition of γ↔α can occur inside the γ-In 2 Se 3 . Thermoreflectance and Raman scattering measurements are carried out to identify the inter-phase transformation of the γ-In 2 Se 3 polycrystals using different heat treatments. Direct band gaps and Raman vibration modes for the γ- and α-In 2 Se 3 crystalline phases are, respectively, characterized and identified. The character of γ↔α inter-phase transition promotes feasible optical and optoelectronic applications of the γ-In 2 Se 3 material in optical memory, optics, and solar-energy devices

  12. Structural phase transition and erasable optically memorized effect in layered γ-In2Se3 crystals

    Science.gov (United States)

    Ho, Ching-Hwa; Chen, Ying-Cen; Pan, Chia-Chi

    2014-01-01

    We have grown In2Se3 layered-type crystals using chemical vapor transport method with ICl3 as the transport agent. The as-grown crystals show two different color groups of black shiny for α-phase In2Se3 and red to yellow for γ-phase In2Se3. High-resolution transmission electron micro scopy verifies crystalline state and structural polytype of the as-grown In2Se3. The results indicate that the α-In2Se3 crystals present more crystalline states than those of the other amorphous γ-In2Se3. The amorphous effect on the advancing of optoelectronic property of γ-In2Se3 shows erasable optical-memorized effect in the disordered and polycrystalline γ-In2Se3 layers. Laser-induced photodarkening and annealed-recovery test verified that a reversible structural-phase transition of γ↔α can occur inside the γ-In2Se3. Thermoreflectance and Raman scattering measurements are carried out to identify the inter-phase transformation of the γ-In2Se3 polycrystals using different heat treatments. Direct band gaps and Raman vibration modes for the γ- and α-In2Se3 crystalline phases are, respectively, characterized and identified. The character of γ↔α inter-phase transition promotes feasible optical and optoelectronic applications of the γ-In2Se3 material in optical memory, optics, and solar-energy devices.

  13. Crystallization and electrical resistivity of Cu{sub 2}O and CuO obtained by thermal oxidation of Cu thin films on SiO{sub 2}/Si substrates

    Energy Technology Data Exchange (ETDEWEB)

    De Los Santos Valladares, L., E-mail: ld301@cam.ac.uk [Cavendish Laboratory, University of Cambridge, J.J Thomson Av., Cambridge CB3 0HE (United Kingdom); Materials and Structures Laboratory, Tokyo Institute of Technology, 4259 Nagatsuta-cho, Midori-ku, Yokohama 226-8503 (Japan); Departamento de Fisica, Universidade Federal de Pernambuco, 50670-901, Recife-Pe (Brazil); Salinas, D. Hurtado [Materials and Structures Laboratory, Tokyo Institute of Technology, 4259 Nagatsuta-cho, Midori-ku, Yokohama 226-8503 (Japan); Laboratorio de Ceramicos y Nanomateriales, Facultad de Ciencias Fisicas, Universidad Nacional Mayor de San Marcos, Ap. Postal 14-0149, Lima (Peru); Dominguez, A. Bustamante [Laboratorio de Ceramicos y Nanomateriales, Facultad de Ciencias Fisicas, Universidad Nacional Mayor de San Marcos, Ap. Postal 14-0149, Lima (Peru); Najarro, D. Acosta [Instituto de Fisica, Departamento de Materia Condensada, Universidad Nacional Autonoma de Mexico, Ap. Postal 20-364, CP 01000 (Mexico); Khondaker, S.I. [NanoScience Technology Centre and Department of Physics, University of Central Florida, Orlando, FL 32826 (United States); Mitrelias, T.; Barnes, C.H.W. [Cavendish Laboratory, University of Cambridge, J.J Thomson Av., Cambridge CB3 0HE (United Kingdom); Aguiar, J. Albino [Departamento de Fisica, Universidade Federal de Pernambuco, 50670-901, Recife-Pe (Brazil); Majima, Y. [Materials and Structures Laboratory, Tokyo Institute of Technology, 4259 Nagatsuta-cho, Midori-ku, Yokohama 226-8503 (Japan); CREST, Japan Science and Technology Agency (JST), 4259 Nagatsuta-cho, Midori-ku, Yokohama 226-8503 (Japan)

    2012-08-01

    In this work, we study the crystallization and electrical resistivity of the formed oxides in a Cu/SiO{sub 2}/Si thin film after thermal oxidation by ex-situ annealing at different temperatures up to 1000 Degree-Sign C. Upon increasing the annealing temperature, from the X ray diffractogram the phase evolution Cu {yields} Cu + Cu{sub 2}O {yields} Cu{sub 2}O {yields} Cu{sub 2}O + CuO {yields} CuO was detected. Pure Cu{sub 2}O films are obtained at 200 Degree-Sign C, whereas uniform CuO films without structural surface defects such as terraces, kinks, porosity or cracks are obtained in the temperature range 300-550 Degree-Sign C. In both oxides, crystallization improves with annealing temperature. A resistivity phase diagram, which is obtained from the current-voltage response, is presented here. The resistivity was expected to increase linearly as a function of the annealing temperature due to evolution of oxides. However, anomalous decreases are observed at different temperatures ranges, this may be related to the improvement of the crystallization and crystallite size when the temperature increases. - Highlights: Black-Right-Pointing-Pointer The crystallization and electrical resistivity of oxides in a Cu films are studied. Black-Right-Pointing-Pointer In annealing Cu films, the phase evolution Cu + Cu{sub 2}O {yields} Cu{sub 2}O {yields} Cu{sub 2}O + CuO {yields} CuO occurs. Black-Right-Pointing-Pointer A resistivity phase diagram, obtained from the current-voltage response, is presented. Black-Right-Pointing-Pointer Some decreases in the resistivity may be related to the crystallization.

  14. Effect of the synthesis conditions on the magnetic and electrical properties of the BaFeO3-x oxide: A metamagnetic behavior

    International Nuclear Information System (INIS)

    Gil de Muro, Izaskun; Insausti, Maite; Lezama, Luis; Rojo, Teofilo

    2005-01-01

    The BaFeO 2.95 oxide has been obtained from thermal decomposition of the [BaFe(C 3 H 2 O 4 ) 2 (H 2 O) 4 ] metallo-organic precursor at 800 deg. C under atmospheric oxygen pressure as small and homogeneous particles. From electronic paramagnetic resonance data, a metallic behavior in the 230-130K temperature range has been observed. Magnetic measurements confirm the existence of a ferro-antiferromagnetic transition at 178K. The magnetic properties of the BaFeO 2.95 oxide are strongly dependent on both temperature and magnetic field with a metamagnetic behavior. The synthesis conditions play an important role on the morphology and the electrical and magnetic properties. The syntherization of the sample produces a dramatic change in the transport properties and the existence of conductivity disappears

  15. Optimization of the optical and electrical properties of electron beam evaporated aluminum-doped zinc oxide films for opto-electronic applications

    Science.gov (United States)

    Ali, H. M.; Abd El-Raheem, M. M.; Megahed, N. M.; Mohamed, H. A.

    2006-08-01

    Aluminum-doped zinc oxide (AZO) thin films have been deposited by electron beam evaporation technique on glass substrates. The structural, electrical and optical properties of AZO films have been investigated as a function of annealing temperature. It was observed that the optical properties such as transmittance, reflectance, optical band gap and refractive index of AZO films were strongly affected by annealing temperature. The transmittance values of 84% in the visible region and 97% in the NIR region were obtained for AZO film annealed at 475 °C. The room temperature electrical resistivity of 4.6×10-3 Ω cm has been obtained at the same temperature of annealing. It was found that the calculated refractive index has been affected by the packing density of the thin films, whereas, the high annealing temperature gave rise to improve the homogeneity of the films. The single-oscillator model was used to analyze the optical parameters such as the oscillator and dispersion energies.

  16. Shrinkage Effects of the Conduction Zone in the Electrical Properties of Metal Oxide Nanocrystals: The Basis for Room Temperature Conductometric Gas Sensor

    Directory of Open Access Journals (Sweden)

    M. Manzanares

    2009-01-01

    Full Text Available The influence of charge localized at the surface of minute metal oxide nanocrystals was studied in WO3 and In2O3 nanostructures, which were obtained replicating mesoporous silica templates. Here, it is shown that the very high resistive states observed at room temperature and dark conditions were originated by the total shrinkage of the conductive zone in the inner part of these nanocrystals. On the contrary, at room temperature and under UV illumination, both photogenerated electron-hole pairs and empty surface states generated by photons diminished the negative charge accumulated at the surface, enlarging the conductive zone and, as a consequence, leading to a reduction of the electrical resistance. Under these conditions, empty surface states produced by UV light reacted with oxidizing gaseous molecules. The charge exchange associated to these reactions also affected the size of the inner conductive zone, and leaded to a new steady-state resistance. These chemical, physical and geometrical effects can be used for gas detection, and constitutes the basis for developing novel room temperature conductometric gas sensors responsive to oxidizing species.

  17. An Overview of High-k Oxides on Hydrogenated-Diamond for Metal-Oxide-Semiconductor Capacitors and Field-Effect Transistors

    Directory of Open Access Journals (Sweden)

    Jiangwei Liu

    2018-06-01

    Full Text Available Thanks to its excellent intrinsic properties, diamond is promising for applications of high-power electronic devices, ultraviolet detectors, biosensors, high-temperature tolerant gas sensors, etc. Here, an overview of high-k oxides on hydrogenated-diamond (H-diamond for metal-oxide-semiconductor (MOS capacitors and MOS field-effect transistors (MOSFETs is demonstrated. Fabrication routines for the H-diamond MOS capacitors and MOSFETs, band configurations of oxide/H-diamond heterointerfaces, and electrical properties of the MOS and MOSFETs are summarized and discussed. High-k oxide insulators are deposited using atomic layer deposition (ALD and sputtering deposition (SD techniques. Electrical properties of the H-diamond MOS capacitors with high-k oxides of ALD-Al2O3, ALD-HfO2, ALD-HfO2/ALD-Al2O3 multilayer, SD-HfO2/ALD-HfO2 bilayer, SD-TiO2/ALD-Al2O3 bilayer, and ALD-TiO2/ALD-Al2O3 bilayer are discussed. Analyses for capacitance-voltage characteristics of them show that there are low fixed and trapped charge densities for the ALD-Al2O3/H-diamond and SD-HfO2/ALD-HfO2/H-diamond MOS capacitors. The k value of 27.2 for the ALD-TiO2/ALD-Al2O3 bilayer is larger than those of the other oxide insulators. Drain-source current versus voltage curves show distinct pitch-off and p-type channel characteristics for the ALD-Al2O3/H-diamond, SD-HfO2/ALD-HfO2/H-diamond, and ALD-TiO2/ALD-Al2O3/H-diamond MOSFETs. Understanding of fabrication routines and electrical properties for the high-k oxide/H-diamond MOS electronic devices is meaningful for the fabrication of high-performance H-diamond MOS capacitor and MOSFET gas sensors.

  18. Combustion synthesized indium-tin-oxide (ITO) thin film for source/drain electrodes in all solution-processed oxide thin-film transistors

    International Nuclear Information System (INIS)

    Tue, Phan Trong; Inoue, Satoshi; Takamura, Yuzuru; Shimoda, Tatsuya

    2016-01-01

    We report combustion solution synthesized (SCS) indium-tin-oxide (ITO) thin film, which is a well-known transparent conductive oxide, for source/drain (S/D) electrodes in solution-processed amorphous zirconium-indium-zinc-oxide TFT. A redox-based combustion synthetic approach is applied to ITO thin film using acetylacetone as a fuel and metal nitrate as oxidizer. The structural and electrical properties of SCS-ITO precursor solution and thin films were systematically investigated with changes in tin concentration, indium metal precursors, and annealing conditions such as temperature, time, and ambient. It was found that at optimal conditions the SCS-ITO thin film exhibited high crystalline quality, atomically smooth surface (RMS ∝ 4.1 Aa), and low electrical resistivity (4.2 x 10 -4 Ω cm). The TFT using SCS-ITO film as the S/D electrodes showed excellent electrical properties with negligible hysteresis. The obtained ''on/off'' current ratio, subthreshold swing factor, subthreshold voltage, and field-effect mobility were 5 x 10 7 , 0.43 V/decade, 0.7 V, and 2.1 cm 2 /V s, respectively. The performance and stability of the SCS-ITO TFT are comparable to those of the sputtered-ITO TFT, emphasizing that the SCS-ITO film is a promising candidate for totally solution-processed oxide TFTs. (orig.)

  19. Rheological and electrical properties used to investigate the coagulation process during sludge treatment.

    Science.gov (United States)

    Mortadi, A; El Melouky, A; Chahid, E; Nasrellah, H; Bakasse, M; Zradba, A; Cherkaoui, O; El Moznine, R

    2018-01-01

    Analyses of rheological properties and electrical conductivity (σ dc ) at direct current have been employed in order to investigate the effects of calcium oxide on the coagulation process during sludge treatment in the textile industry. In this context, rheological and electrical measurements were performed on five samples - one that contained raw sludge and the other four that were prepared from the raw sludge and different amounts of calcium oxide: 2, 3, 4, 5% (w/w). Rheological behavior of these samples was analyzed using the Herschel-Bulkley modified model. The influence of calcium oxide content on the rheological parameters such as infinite viscosity, the yield stress, the consistency coefficient, and the consistency index, are presented and discussed. The impact of the calcium oxide content on pH and conductivity were also examined. Similar behaviors have been seen in the evolution of conductivity and infinite viscosity as a function of the calcium oxide content. These latter characteristics were modeled by an equation using two power laws. This equation was able to fit very well the evolution of electrical conductivity and also the viscosity versus the percentage of calcium oxide to predict the optimal amount of calcium oxide (3%) to achieve the coagulation step during sludge treatment.

  20. Morphological Influence of Solution-Processed Zinc Oxide Films on Electrical Characteristics of Thin-Film Transistors

    Directory of Open Access Journals (Sweden)

    Hyeonju Lee

    2016-10-01

    Full Text Available We report on the morphological influence of solution-processed zinc oxide (ZnO semiconductor films on the electrical characteristics of ZnO thin-film transistors (TFTs. Different film morphologies were produced by controlling the spin-coating condition of a precursor solution, and the ZnO films were analyzed using atomic force microscopy, X-ray diffraction, X-ray photoemission spectroscopy, and Hall measurement. It is shown that ZnO TFTs have a superior performance in terms of the threshold voltage and field-effect mobility, when ZnO crystallites are more densely packed in the film. This is attributed to lower electrical resistivity and higher Hall mobility in a densely packed ZnO film. In the results of consecutive TFT operations, a positive shift in the threshold voltage occurred irrespective of the film morphology, but the morphological influence on the variation in the field-effect mobility was evident. The field-effect mobility in TFTs having a densely packed ZnO film increased continuously during consecutive TFT operations, which is in contrast to the mobility decrease observed in the less packed case. An analysis of the field-effect conductivities ascribes these results to the difference in energetic traps, which originate from structural defects in the ZnO films. Consequently, the morphological influence of solution-processed ZnO films on the TFT performance can be understood through the packing property of ZnO crystallites.

  1. Studies of physicochemical properties of graphite oxide and thermally exfoliated/reduced graphene oxide

    Directory of Open Access Journals (Sweden)

    Drewniak Sabina Elżbieta

    2015-12-01

    Full Text Available The aim of the experimental research studies was to determine some electrical properties of graphite oxide and thermally exfoliated/reduced graphene oxide. The authors tried to interpret the obtained physicochemical results. For that purpose, both resistance measurements and investigation studies were carried out in order to characterize the samples. The resistance was measured at various temperatures in the course of composition changes of gas atmospheres (which surround the samples. The studies were also supported by such methods as: scanning electron microscopy (SEM, Raman spectroscopy (RS, atomic force microscopy (AFM and thermogravimetry (TG. Moreover, during the experiments also the elemental analyses (EA of the tested samples (graphite oxide and thermally exfoliated/reduced graphene oxide were performed.

  2. A Study of Electrical and Optical Stability of GSZO THin Film Transisitors

    Science.gov (United States)

    2014-01-01

    great interest in amorphous indium gallium zinc oxide (a- IGZO ) as the active channel layer due to its promising electrical and photosensitive...a great interest in amorphous indium gallium zinc oxide (a- IGZO ) as the active channel layer due to its promising electrical and photosensitive...the-art Gen-8 substrate size. However, as indium resources are becoming scarce and expensive, replacing the a- IGZO TFT with a less expensive material

  3. Solid-state supercapacitors with ionic liquid gel polymer electrolyte based on poly (3, 4-ethylenedioxythiophene), carbon nanotubes, and metal oxides nanocomposites for electrical energy storage

    Science.gov (United States)

    Obeidat, Amr M.

    Clean and renewable energy systems have emerged as an important area of research having diverse and significant new applications. These systems utilize different energy storage methods such as the batteries and supercapacitors. Supercapacitors are electrochemical energy storage devices that are designed to bridge the gap between batteries and conventional capacitors. Supercapacitors which store electrical energy by electrical double layer capacitance are based on large surface area structured carbons. The materials systems in which the Faradaic reversible redox reactions store electrical energy are the transition metal oxides and electronically conducting polymers. Among the different types of conducting polymers, poly (3, 4- ethylenedioxythiophene) (PEDOT) is extensively investigated owing to its chemical and mechanical stability. Due to instability of aqueous electrolytes at high voltages and toxicity of organic electrolytes, potential of supercapacitors has not been fully exploited. A novel aspect of this work is in utilizing the ionic liquid gel polymer electrolyte to design solid-state supercapacitors for energy storage. Various electrochemical systems were investigated including graphene, PEDOT, PEDOT-carbon nanotubes, PEDOT-manganese oxide, and PEDOT-iron oxide nanocomposites. The electrochemical performance of solid-state supercapacitor devices was evaluated based on cyclic voltammetry (CV), charge-discharge (CD), prolonged cyclic tests, and electrochemical impedance spectroscopy (EIS) techniques. Raman spectroscopy technique was also utilized to analyze the bonding structure of the electrode materials. The graphene solid-state supercapacitor system displayed areal capacitance density of 141.83 mF cm-2 based on high potential window up to 4V. The PEDOT solid-state supercapacitor system was synthesized in acetonitrile and aqueous mediums achieving areal capacitance density of 219.17 mF cm-2. The hybrid structure of solid-state supercapacitors was also

  4. Charge state of oxide layer of SIMOX-structures

    CERN Document Server

    Askinazi, A Y; Dmitriev, V A; Miloglyadova, L V

    2001-01-01

    The charge state of the oxide layer of the SIMOX-structures, obtained in the course of forming the oxide layers, bricked up in the silicon volume, through the oxygen ions implantation into the Si, is studied. The charge state of the given structures is studied through the method of the layer-by-layer profiling, which makes it possible to obtain the dependence of the plane zones potential on the oxide layer thickness. It is established, that during the process of the SIMOX-structures formation in the oxide layer near the boundary with the Si there appear defects, responsible for the charge. The radiation from the near-the-ultraviolet (NUV) area without the applied electric field neutralizes the given charge. The simultaneous impact of the NUV-radiation and electric field leads to the formation of significantly positive charge

  5. Stability aspects of hydrogen-doped indium oxide

    OpenAIRE

    Jost, Gabrielle; Hamri, Alexander Nordin; Köhler, Florian; Hüpkes, Jürgen

    2015-01-01

    Transparent conductive oxides play an important role as contact layers in various opto-electronic devices such as solar cells or LEDs. Whilst crystalline materials e.g. zinc oxide (ZnO), tin oxide (Sn2O3) or tin doped indium oxide (ITO) have already been vastly investigated and applied [1] hydrogen doped indium oxide (In2O3:H) entered the scene a while ago as a new material with a superior trade-off between electrical and optical performance. In2O3:H is commonly deposited at room temperature...

  6. Electrical behavior of amide functionalized graphene oxide and graphene oxide films annealed at different temperatures

    International Nuclear Information System (INIS)

    Rani, Sumita; Kumar, Mukesh; Kumar, Dinesh; Sharma, Sumit

    2015-01-01

    Films of graphene oxide (GO) and amide functionalized graphene oxides (AGOs) were deposited on SiO 2 /Si(100) by spin coating and were thermally annealed at different temperatures. Sheet resistance of GO and AGOs films was measured using four probe resistivity method. GO an insulator at room temperature, exhibits decrease in sheet resistance with increase in annealing temperature. However, AGOs' low sheet resistance (250.43 Ω) at room temperature further decreases to 39.26 Ω after annealing at 800 °C. It was observed that the sheet resistance of GO was more than AGOs up to 700 °C, but effect was reversed after annealing at higher temperature. At higher annealing temperatures the oxygen functionality reduces in GO and sheet resistance decreases. Sheet resistance was found to be annealing time dependent. Longer duration of annealing at a particular temperature results in decrease of sheet resistance. - Highlights: • Amide functionalized graphene oxides (AGOs) were synthesized at room temperature (RT). • AGO films have low sheet resistance at RT as compared to graphene oxide (GO). • Fast decrease in the sheet resistance of GO with annealing as compared to AGOs • AGOs were found to be highly dispersible in polar solvents

  7. Improvement of optical and electrical properties of indium tin oxide layer of GaN-based light-emitting diode by surface plasmon in silver nanoparticles

    International Nuclear Information System (INIS)

    Cho, Chu-Young; Hong, Sang-Hyun; Park, Seong-Ju

    2015-01-01

    We report on the effect of silver (Ag) nanoparticles on the optical transmittance and electrical conductivity of indium tin oxide (ITO) transparent conducting layer deposited on p-GaN layer of light-emitting diodes (LEDs). The sheet resistance of ITO and the series resistance of LEDs were decreased due to the increased electrical conductivity of ITO by Ag nanoparticles, compared with those of the LEDs with a bare ITO only. The ITO transmittance was also improved by localized surface plasmon resonance between the incident light and the randomly distributed Ag nanoparticles on ITO. The optical output power of LEDs with Ag nanoparticles on ITO was increased by 16% at 20 mA of injection current. - Highlights: • We studied the effect of Ag nanoparticles deposited on ITO on the properties of LED. • The optical power of LED and transmittance of ITO were improved by Ag surface plasmon. • The electrical conductivity of ITO was increased by Ag nanoparticles

  8. Influence of growth temperature on electrical, optical, and plasmonic properties of aluminum:zinc oxide films grown by radio frequency magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Dondapati, Hareesh; Santiago, Kevin; Pradhan, A. K. [Center for Materials Research, Norfolk State University, 700 Park Avenue, Norfolk, Virginia 23504 (United States)

    2013-10-14

    We have investigated the responsible mechanism for the observation of metallic conductivity at room temperature and metal-semiconductor transition (MST) at lower temperatures for aluminum-doped zinc oxide (AZO) films. AZO films were grown on glass substrates by radio-frequency magnetron sputtering with varying substrate temperatures (T{sub s}). The films were found to be crystalline with the electrical resistivity close to 1.1 × 10{sup −3} Ω cm and transmittance more than 85% in the visible region. The saturated optical band gap of 3.76 eV was observed for the sample grown at T{sub s} of 400 °C, however, a slight decrease in the bandgap was noticed above 400 °C, which can be explained by Burstein–Moss effect. Temperature dependent resistivity measurements of these highly conducting and transparent films showed a MST at ∼110 K. The observed metal-like and metal-semiconductor transitions are explained by taking into account the Mott phase transition and localization effects due to defects. All AZO films demonstrate crossover in permittivity from positive to negative and low loss in the near-infrared region, illustrating its applications for plasmonic metamaterials, including waveguides for near infrared telecommunication region. Based on the results presented in this study, the low electrical resistivity and high optical transmittance of AZO films suggested a possibility for the application in the flexible electronic devices, such as transparent conducting oxide film on LEDs, solar cells, and touch panels.

  9. Electrical, thermal and electrochemical properties of SmBa_1_−_xSr_xCo_2O_5_+_δ cathode materials for intermediate-temperature solid oxide fuel cells

    International Nuclear Information System (INIS)

    Subardi, Adi; Chen, Ching-Cheng; Cheng, Meng-Hsien; Chang, Wen-Ku; Fu, Yen-Pei

    2016-01-01

    The effects of Sr doping on the Ba-site of SmBaCo_2O_5_+_δ in term of structure characteristics, thermal expansion coefficients (TECs), electrical properties and electrochemical performance have been investigated as cathode material for intermediate-temperature solid oxide fuel cells (IT-SOFCs). The TECs of SBSC-based cathodes are calculated from 19.8 − 20.5 × 10"−"6 K"−"1 in the temperature range of 100–800 °C, and the TEC values decrease with increasing Sr content. The oxygen content and the average oxidation state of cobalt increase with increasing Sr content determined by the X-ray photoelectron spectroscopy (XPS) and Thermogravimetry analysis (TGA) results. At a given temperature, the electrical conductivity values are in the order as follows: SBSC55 > SBSC73 > SBSC91. This behavior might be due to the increase in electronic hole. The electrical conductivities of SBSC55 at 600 °C are distributed in the range of 660 S/cm of p(O_2) = 0.01 atm to 1168 S/cm of p(O_2) = 0.21 atm, indicating that the cathode can endure reducing atmosphere. SBSC55 with high electrical conductivity in p(O_2) = 0.01 atm is ascribed to SBSC55 with stable double-perovskite structure at such low oxygen partial pressure. The SBSC55 cathode showed the highest power density of 304 mW/cm"2 at operating temperature of 700 °C. Based on the electrochemical properties, SBSC55 is a potential cathode for IT-SOFCs.

  10. Electrical properties of Au/CdZnTe/Au detectors grown by the boron oxide encapsulated Vertical Bridgman technique

    Energy Technology Data Exchange (ETDEWEB)

    Turturici, A.A. [Dipartimento di Fisica e Chimica, Università di Palermo, Viale delle Scienze, Edificio 18, Palermo 90128 (Italy); Abbene, L., E-mail: leonardo.abbene@unipa.it [Dipartimento di Fisica e Chimica, Università di Palermo, Viale delle Scienze, Edificio 18, Palermo 90128 (Italy); Gerardi, G. [Dipartimento di Fisica e Chimica, Università di Palermo, Viale delle Scienze, Edificio 18, Palermo 90128 (Italy); Benassi, G. [due2lab s.r.l., Via Paolo Borsellino 2, Scandiano, 42019 Reggio Emilia (Italy); Bettelli, M.; Calestani, D. [IMEM/CNR, Parco Area delle Scienze 37/A, Parma 43100 (Italy); Zambelli, N. [due2lab s.r.l., Via Paolo Borsellino 2, Scandiano, 42019 Reggio Emilia (Italy); Raso, G. [Dipartimento di Fisica e Chimica, Università di Palermo, Viale delle Scienze, Edificio 18, Palermo 90128 (Italy); Zappettini, A. [IMEM/CNR, Parco Area delle Scienze 37/A, Parma 43100 (Italy); Principato, F. [Dipartimento di Fisica e Chimica, Università di Palermo, Viale delle Scienze, Edificio 18, Palermo 90128 (Italy)

    2016-09-11

    In this work we report on the results of electrical characterization of new CdZnTe detectors grown by the Boron oxide encapsulated Vertical Bridgman technique (B-VB), currently produced at IMEM-CNR (Parma, Italy). The detectors, with gold electroless contacts, have different thicknesses (1 and 2.5 mm) and the same electrode layout, characterized by a central anode surrounded by a guard-ring electrode. Investigations on the charge transport mechanisms and the electrical contact properties, through the modeling of the measured current–voltage (I–V) curves, were performed. Generally, the detectors are characterized by low leakage currents at high bias voltages even at room temperature: 34 nA/cm{sup 2} (T=25 °C) at 10,000 V/cm, making them very attractive for high flux X-ray measurements, where high bias voltage operation is required. The Au/CdZnTe barrier heights of the devices were estimated by using the interfacial layer-thermionic-diffusion (ITD) model in the reverse bias voltage range. Comparisons with CdZnTe detectors, grown by Traveling Heater Method (THM) and characterized by the same electrode layout, deposition technique and resistivity, were also performed.

  11. Electrode Kinetics and Gas Conversion in Solid Oxide Cells

    DEFF Research Database (Denmark)

    Njodzefon, Jean-Claude

    The solid oxide fuel cell (SOFC) converts hydrogen, carbon monoxide and hydrocarbon fuels (directly) into electricity with very high efficiencies and has demonstrated almost comparable performance when operated in reverse mode as a solid oxide electrolysis cell (SOEC). In this case electrical (and...... thermal) energy is stored as chemical energy of reaction products. To this end, the cells are fed with steam (H2O electrolysis), carbon dioxide (CO2 electrolysis) or a mixture of both (H2O/CO2 co-electrolysis) and of course electrical (ΔG) and thermal (TΔS) energies for the splitting of reactant compounds...... of the solid oxide cell (SOC) and independent of polarization mode (fuel cell mode or electrolysis mode), the current flowing through the cell is limited by processes such as adsorption and desorption of reactants or products, diffusion through the porous electrodes, activation or charge transfer...

  12. Electrical effect of titanium diffusion on amorphous indium gallium zinc oxide

    International Nuclear Information System (INIS)

    Choi, Seung-Ha; Jung, Woo-Shik; Park, Jin-Hong

    2012-01-01

    In this work, thermal diffusion phenomenon of Ti into amorphous indium gallium zinc oxide (α-IGZO) was carefully investigated with secondary ion mass spectroscopy, I-V, and R s measurement systems and HSC chemistry simulation tool. According to the experimental and simulated results, the diffused Ti atoms were easily oxidized due to its lowest oxidation free energy. Since oxygen atoms were decomposed from the α-IGZO during the oxidation of Ti, the number of oxygen vacancies working as electron-donating sites in α-IGZO was dramatically increased, contributing to the decrease of resistivity (ρ) from 1.96 Ω cm (as-deposited α-IGZO) to 1.33 × 10 −3 Ω cm (350 °C annealed α-IGZO).

  13. Electrical properties improvement of multicrystalline silicon solar cells using a combination of porous silicon and vanadium oxide treatment

    International Nuclear Information System (INIS)

    Derbali, L.; Ezzaouia, H.

    2013-01-01

    In this paper, we will report the enhancement of the conversion efficiency of multicrystalline silicon solar cells after coating the front surface with a porous silicon layer treated with vanadium oxide. The incorporation of vanadium oxide into the porous silicon (PS) structure, followed by a thermal treatment under oxygen ambient, leads to an important decrease of the surface reflectivity, a significant enhancement of the effective minority carrier lifetime (τ eff ) and a significant enhancement of the photoluminescence (PL) of the PS structure. We Obtained a noticeable increase of (τ eff ) from 3.11 μs to 134.74 μs and the surface recombination velocity (S eff ) have decreased from 8441 cm s −1 to 195 cm s −1 . The reflectivity spectra of obtained films, performed in the 300–1200 nm wavelength range, show an important decrease of the average reflectivity from 40% to 5%. We notice a significant improvement of the internal quantum efficiency (IQE) in the used multicrystalline silicon substrates. Results are analyzed and compared to those carried out on a reference (untreated) sample. The electrical properties of the treated silicon solar cells were improved noticeably as regard to the reference (untreated) sample.

  14. Synthesis of Antimony Doped Tin Oxide and its Use as Electrical Humidity Sensor

    Directory of Open Access Journals (Sweden)

    B. C. Yadav

    2008-05-01

    Full Text Available In this paper we report the humidity sensitive electrical properties of antimony doped tin oxide. Antimony has been doped within SnO2 in the ratio 1:1. The pellet has been made by hydraulic pressing machine at pressure 30 MPa and room temperature 24°C. This pellet, has been annealed at 200ºC, 300ºC, 400ºC, 500ºC and 600ºC successively for 3 hrs and after each step annealing, observations were taken. It has been observed, as Relative Humidity (%RH increases, there is decrease in the resistivity of pellet for the entire range of RH i.e. from 10% to 95%. Linear decrease is observed for the range of RH from 10% to 85% for annealing temperature 200ºC and 300ºC, from 10% to 60% for annealing temperature 400ºC and from 10% to 30% for annealing temperature 500ºC and 600ºC respectively. Scanning electron micrographs show the surface morphology and X-ray diffraction reveals the nanostructure of sensing element. Results have been found reproducible with hysterisis of ± 2% after 3 months.

  15. Oxidation Characteristics and Electrical Properties of Doped Mn-Co Spinel Reaction Layer for Solid Oxide Fuel Cell Metal Interconnects

    Directory of Open Access Journals (Sweden)

    Pingyi Guo

    2018-01-01

    Full Text Available To prevent Cr poisoning of the cathode and to retain high conductivity during solid oxide fuel cell (SOFC operation, Cu or La doped Co-Mn coatings on a metallic interconnect is deposited and followed by oxidation at 750 °C. Microstructure and composition of coatings after preparation and oxidation is analyzed by X-ray diffraction (XRD and scanning electron microscopy (SEM. High energy micro arc alloying process, a low cost technique, is used to prepare Cu or La doped Co-Mn coatings with the metallurgical bond. When coatings oxidized at 750 °C in air for 20 h and 100 h, Co3O4 is the main oxide on the surface of Co-38Mn-2La and Co-40Mn coatings, and (Co,Mn3O4 spinel continues to grow with extended oxidation time. The outmost scales of Co-33Mn-17Cu are mainly composed of cubic MnCo2O4 spinel with Mn2O3 after oxidation for 20 h and 100 h. The average thickness of oxide coatings is about 60–70 μm after oxidation for 100 h, except that Co-40Mn oxide coatings are a little thicker. Area-specific resistance of Cu/La doped Co-Mn coatings are lower than that of Co-40Mn coating. (Mn,Co3O4/MnCo2O4 spinel layer is efficient at blocking the outward diffusion of chromium and iron.

  16. Electrical analysis of high dielectric constant insulator and metal gate metal oxide semiconductor capacitors on flexible bulk mono-crystalline silicon

    KAUST Repository

    Ghoneim, Mohamed T.

    2015-06-01

    We report on the electrical study of high dielectric constant insulator and metal gate metal oxide semiconductor capacitors (MOSCAPs) on a flexible ultra-thin (25 μm) silicon fabric which is peeled off using a CMOS compatible process from a standard bulk mono-crystalline silicon substrate. A lifetime projection is extracted using statistical analysis of the ramping voltage (Vramp) breakdown and time dependent dielectric breakdown data. The obtained flexible MOSCAPs operational voltages satisfying the 10 years lifetime benchmark are compared to those of the control MOSCAPs, which are not peeled off from the silicon wafer. © 2014 IEEE.

  17. Optical and Electrical Properties of Tin-Doped Cadmium Oxide Films Prepared by Electron Beam Technique

    Science.gov (United States)

    Ali, H. M.; Mohamed, H. A.; Wakkad, M. M.; Hasaneen, M. F.

    2009-04-01

    Tin-doped cadmium oxide films were deposited by electron beam evaporation technique. The structural, optical and electrical properties of the films were characterized. The X-ray diffraction (XRD) study reveals that the films are polycrystalline in nature. As composition and structure change due to the dopant ratio and annealing temperature, the carrier concentration was varied around 1020 cm-3, and the mobility increased from less than 10 to 45 cm2 V-1 s-1. A transmittance value of ˜83% and a resistivity value of 4.4 ×10-4 Ω cm were achieved for (CdO)0.88(SnO2)0.12 film annealed at 350 °C for 15 min., whereas the maximum value of transmittance ˜93% and a resistivity value of 2.4 ×10-3 Ω cm were obtained at 350 °C for 30 min. The films exhibited direct band-to-band transitions, which corresponded to optical band gaps of 3.1-3.3 eV.

  18. Study of the properties of internal oxidized Cu - Al - Ti - Hf alloys

    International Nuclear Information System (INIS)

    Solopov, V.I.; Daneliya, E.P.; Daneliya, G.V.; Lebasova, O.P.

    1982-01-01

    Investigation results of mechanical properties and electric conductivity of rods of internally oxidized alloys Cu-Al-Ti-Hf depending on chemical composition, varying in the limits ensuring the formation of disperse enough and evenly distributed over the volume oxide phase. (0-1%Al, 0-0.5%Ti, 0-0.3%Hf, the restcopper), in the process of internal oxidation are presented. Internally oxidized alloys Cu-Al-Ti-Hf have increased strength properties with insignificant increase of specific electric resistance as compared with the known internally oxidized alloys Cu-Al. At that, the best combination of physicomechanical properties is achieved at small contents of titanium (0.01-0.05%) and hafnium (0.01-0.1%)

  19. Microstructure and electrical properties of bismuth and bismuth oxide deposited by magnetron sputtering UBM

    International Nuclear Information System (INIS)

    Otalora B, D. M.; Dussan, A.; Olaya F, J. J.

    2015-01-01

    In this work, bismuth (Bi) and bismuth oxide (Bi 2 O 3 ) thin films were prepared, at room temperature, by Sputtering Unbalanced Magnetron (UBM - Unbalance Magnetron) technique under glass substrates. Microstructural and electrical properties of the samples were studied by X-ray diffraction (XRD) and System for Measuring Physical Properties - PPMS (Physical Property Measurement System). Dark resistivity of the material was measured for a temperature range between 100 and 400 K. From the XRD measurements it was observed a polycrystalline character of the Bi associated to the presence of phases above the main peak, 2θ = 26.42 grades and a growth governed by a rhombohedral structure. Crystal parameters were obtained for both compounds, Bi and Bi 2 O 3 . From the analysis of the spectra of the conductivity as a function of temperature, it was established that the transport mechanism that governs the region of high temperature (T>300 K) is thermally activated carriers. From conductivity measurements the activation energies were obtained of 0.0094 eV and 0.015 eV for Bi 2 O 3 and Bi, respectively. (Author)

  20. Reduction of graphene oxide and its effect on square resistance of reduced graphene oxide films

    Energy Technology Data Exchange (ETDEWEB)

    Hou, Zhaoxia; Zhou, Yin; Li, Guang Bin; Wang, Shaohong; Wang, Mei Han; Hu, Xiaodan; Li, Siming [Liaoning Province Key Laboratory of New Functional Materials and Chemical Technology, School ofMechanical Engineering, Shenyang University, Shenyang (China)

    2015-06-15

    Graphite oxide was prepared via the modified Hummers’ method and graphene via chemical reduction. Deoxygenation efficiency of graphene oxide was compared among single reductants including sodium borohydride, hydrohalic acids, hydrazine hydrate, and vitamin C. Two-step reduction of graphene oxide was primarily studied. The reduced graphene oxide was characterized by XRD, TG, SEM, XPS, and Raman spectroscopy. Square resistance was measured as well. Results showed that films with single-step N2H4 reduction have the best transmittance and electrical conductivity with square resistance of ~5746 Ω/sq at 70% transmittance. This provided an experimental basis of using graphene for electronic device applications.

  1. Nickel oxide/hydroxide nanoplatelets synthesized by chemical precipitation for electrochemical capacitors

    International Nuclear Information System (INIS)

    Wu, M.-S.; Hsieh, H.-H.

    2008-01-01

    Nickel hydroxide powder prepared by directly chemical precipitation method at room temperature has a nanoplatelet-like morphology and could be converted into nickel oxide at annealing temperature higher than 300 deg. C, confirmed by the thermal gravimetric analysis and X-ray diffraction. Annealing temperature influences significantly both the electrical conductivity and the specific surface area of nickel oxide/hydroxide powder, and consequently determines the capacitor behavior. Electrochemical capacitive behavior of the synthesized nickel hydroxide/oxide film is investigated by cyclic voltammetry and electrochemical impedance spectroscope methods. After 300 deg. C annealing, the highest specific capacitance of 108 F g -1 is obtained at scan rate of 10 mV s -1 . When annealing temperature is lower than 300 deg. C, the electrical conductivity of nickel hydroxide dominates primarily the capacitive behavior. When annealing temperature is higher than 300 deg. C, both electrical conductivity and specific surface area of the nickel oxide dominate the capacitive behavior

  2. Solvothermal synthesis and electrical conductivity model for the zinc oxide-insulated oil nanofluid

    International Nuclear Information System (INIS)

    Shen, L.P.; Wang, H.; Dong, M.; Ma, Z.C.; Wang, H.B.

    2012-01-01

    A new kind of nanofluid, ZnO-insulated oil nanofluid was prepared from ZnO nanoparticles synthesized by solvothermal method. Electrical property measurement shows that the electrical conductivity increases by 973 times after adding 0.75% volumetric fraction of ZnO nanoparticles into the insulated oil. A linear dependence of the electrical conductivity on the volumetric fraction has been observed, while the temperature dependence of the electrical conductivity reveals a nonlinear relationship. An electrical conductivity model is established for the nanofluid by considering both the Brownian motion and electrophoresis of the ZnO nanoparticles. -- Highlights: ► Stable ZnO-insulated oil nanofluid was successfully prepared. ► The electrical conductivity of the ZnO nanofluid is investigated. ► A new model is established to explain the electrical properties of the nanofluid.

  3. Electric-Field Control of Oxygen Vacancies and Magnetic Phase Transition in a Cobaltite/Manganite Bilayer

    Science.gov (United States)

    Cui, B.; Song, C.; Li, F.; Zhong, X. Y.; Wang, Z. C.; Werner, P.; Gu, Y. D.; Wu, H. Q.; Saleem, M. S.; Parkin, S. S. P.; Pan, F.

    2017-10-01

    Manipulation of oxygen vacancies (VO ) in single oxide layers by varying the electric field can result in significant modulation of the ground state. However, in many oxide multilayers with strong application potentials, e.g., ferroelectric tunnel junctions and solid-oxide fuel cells, understanding VO behavior in various layers under an applied electric field remains a challenge, owing to complex VO transport between different layers. By sweeping the external voltage, a reversible manipulation of VO and a corresponding fixed magnetic phase transition sequence in cobaltite/manganite (SrCoO3 -x/La0.45Sr0.55MnO3 -y ) heterostructures are reported. The magnetic phase transition sequence confirms that the priority of electric-field-induced VO formation or annihilation in the complex bilayer system is mainly determined by the VO formation energies and Gibbs free-energy differences, which is supported by theoretical analysis. We not only realize a reversible manipulation of the magnetic phase transition in an oxide bilayer but also provide insight into the electric-field control of VO engineering in heterostructures.

  4. The iron and cerium oxide influence on the electric conductivity and the corrosion resistance of anodized aluminium; A influencia do ferro e do oxido de cerio sobre a condutividade eletrica e a resistencia a corrosao do aluminio anodizado

    Energy Technology Data Exchange (ETDEWEB)

    Souza, Kellie Provazi de

    2006-07-01

    The influence of different treatments on the aluminum system covered with aluminum oxide is investigated. The aluminum anodization in sulphuric media and in mixed sulphuric and phosphoric media was used to alter the corrosion resistance, thickness, coverage degree and microhardness of the anodic oxide. Iron electrodeposition inside the anodic oxide was used to change its electric conductivity and corrosion resistance. Direct and pulsed current were used for iron electrodeposition and the Fe(SO{sub 4}){sub 2}(NH{sub 4}){sub 2}.6H{sub 2}O electrolyte composition was changed with the addition of boric and ascorbic acids. To the sealing treatment the CeCl{sub 3} composition was varied. The energy dispersive x-ray (EDS), the x-ray fluorescence spectroscopy (FRX) and the morphologic analysis by scanning electronic microscopy (SEM) allowed to verify that, the pulsed current increase the iron content inside the anodic layer and that the use of the additives inhibits the iron oxidation. The chronopotentiometric curves obtained during iron electrodeposition indicated that the boric and ascorbic acids mixture increased the electrodeposition process efficiency. The electrochemical impedance spectroscopy (EIE), the Vickers (Hv) microhardness measurements and morphologic analysis evidenced that the sealing treatment improves the corrosion resistance of the anodic film modified with iron. The electrical impedance (EI) technique allowed to prove the electric conductivity increase of the anodized aluminum with iron electrodeposited even after the cerium low concentration treatment. Iron nanowires were prepared by using the anodic oxide pores as template. (author)

  5. Mediator oxidation systems in organic electrosynthesis

    International Nuclear Information System (INIS)

    Ogibin, Yurii N; Elinson, Michail N; Nikishin, Gennady I

    2009-01-01

    The data on the use of mediator oxidation systems activated by electric current (anodic or parallel anodic and cathodic) in organic electrosynthesis are considered and generalised. Electrochemical activation of these systems permits successful application of catalytic versions and easy scaling of mediator-promoted processes. Chemical and environmental advantages of electrochemical processes catalysed by mediator oxidation systems are demonstrated. Examples of the application of organic and inorganic mediators for the oxidation of various classes of organic compounds under conditions of electrolysis are given.

  6. Electrical control of memristance and magnetoresistance in oxide magnetic tunnel junctions

    KAUST Repository

    Zhang, Kun

    2015-01-01

    Electric-field control of magnetic and transport properties of magnetic tunnel junctions has promising applications in spintronics. Here, we experimentally demonstrate a reversible electrical manipulation of memristance, magnetoresistance, and exchange bias in Co/CoO–ZnO/Co magnetic tunnel junctions, which enables the realization of four nonvolatile resistance states. Moreover, greatly enhanced tunneling magnetoresistance of 68% was observed due to the enhanced spin polarization of the bottom Co/CoO interface. The ab initio calculations further indicate that the spin polarization of the Co/CoO interface is as high as 73% near the Fermi level and plenty of oxygen vacancies can induce metal–insulator transition of the CoO1−v layer. Thus, the electrical manipulation mechanism on the memristance, magnetoresistance and exchange bias can be attributed to the electric-field-driven migration of oxygen ions/vacancies between very thin CoO and ZnO layers.

  7. Optical and electrical experiments at some transition-metal oxide foil-electrolyte interfaces

    International Nuclear Information System (INIS)

    Sari, S.O.; Ahlgren, W.L.

    1977-01-01

    Metal-oxide layers formed from transition-metal foils oxidized by heating in air have been examined for their photoelectrolytic response. The metals examined are Y, Ti, Zr, Hf, V, Nb, Ta, Mo, W, and Pt. Weak photoeffects are observed for oxide layers of all of these metals. Sizable light-dependent oxygen gas evolution rates are found in Ti and also in W oxides. The spectral dependence of the oxygen response in these compounds is investigated, and interpretation is given of these experiments

  8. Scandium-doped zinc cadmium oxide as a new stable n-type oxide thermoelectric material

    DEFF Research Database (Denmark)

    Han, Li; Christensen, Dennis Valbjørn; Bhowmik, Arghya

    2016-01-01

    Scandium-doped zinc cadmium oxide (Sc-doped ZnCdO) is proposed as a new n-type oxide thermoelectric material. The material is sintered in air to maintain the oxygen stoichiometry and avoid instability issues. The successful alloying of CdO with ZnO at a molar ratio of 1 : 9 significantly reduced...... is a good candidate for improving the overall conversion efficiencies in oxide thermoelectric modules. Meanwhile, Sc-doped ZnCdO is robust in air at high temperatures, whereas other n-type materials, such as Al-doped ZnO, will experience rapid degradation of their electrical conductivity and ZT....

  9. Modeling and Predicting the Electrical Conductivity of Composite Cathode for Solid Oxide Fuel Cell by Using Support Vector Regression

    Science.gov (United States)

    Tang, J. L.; Cai, C. Z.; Xiao, T. T.; Huang, S. J.

    2012-07-01

    The electrical conductivity of solid oxide fuel cell (SOFC) cathode is one of the most important indices affecting the efficiency of SOFC. In order to improve the performance of fuel cell system, it is advantageous to have accurate model with which one can predict the electrical conductivity. In this paper, a model utilizing support vector regression (SVR) approach combined with particle swarm optimization (PSO) algorithm for its parameter optimization was established to modeling and predicting the electrical conductivity of Ba0.5Sr0.5Co0.8Fe0.2 O3-δ-xSm0.5Sr0.5CoO3-δ (BSCF-xSSC) composite cathode under two influence factors, including operating temperature (T) and SSC content (x) in BSCF-xSSC composite cathode. The leave-one-out cross validation (LOOCV) test result by SVR strongly supports that the generalization ability of SVR model is high enough. The absolute percentage error (APE) of 27 samples does not exceed 0.05%. The mean absolute percentage error (MAPE) of all 30 samples is only 0.09% and the correlation coefficient (R2) as high as 0.999. This investigation suggests that the hybrid PSO-SVR approach may be not only a promising and practical methodology to simulate the properties of fuel cell system, but also a powerful tool to be used for optimal designing or controlling the operating process of a SOFC system.

  10. multilevel buck converter for automotive electrical load

    African Journals Online (AJOL)

    user

    The electrical low voltage load requirement in the passenger vehicle is ... oxides emissions, and 82% of carbon monoxides (CO). [4]. ... government placed an order restricting the movement ... transient and steady-state characteristics of the.

  11. Impact of metal nano layer thickness on tunneling oxide and memory performance of core-shell iridium-oxide nanocrystals

    Energy Technology Data Exchange (ETDEWEB)

    Banerjee, W.; Maikap, S. [Thin Film Nano Tech. Lab., Department of Electronic Engineering, Chang Gung University, Tao-Yuan, Taiwan 333, Taiwan (China); Tien, T.-C. [Material Research Laboratories, Industrial Technology Research Institute, Hsinchu, Taiwan 310, Taiwan (China); Li, W.-C.; Yang, J.-R. [Department of Materials Science and Engineering, National Taiwan University, Taipei 106, Taiwan (China)

    2011-10-01

    The impact of iridium-oxide (IrO{sub x}) nano layer thickness on the tunneling oxide and memory performance of IrO{sub x} metal nanocrystals in an n-Si/SiO{sub 2}/Al{sub 2}O{sub 3}/IrO{sub x}/Al{sub 2}O{sub 3}/IrO{sub x} structure has been investigated. A thinner (1.5 nm) IrO{sub x} nano layer has shown better memory performance than that of a thicker one (2.5 nm). Core-shell IrO{sub x} nanocrystals with a small average diameter of 2.4 nm and a high density of {approx}2 x 10{sup 12}/cm{sup 2} have been observed by scanning transmission electron microscopy. The IrO{sub x} nanocrystals are confirmed by x-ray photoelectron spectroscopy. A large memory window of 3.0 V at a sweeping gate voltage of {+-}5 V and 7.2 V at a sweeping gate voltage of {+-} 8 V has been observed for the 1.5 nm-thick IrO{sub x} nano layer memory capacitors with a small equivalent oxide thickness of 8 nm. The electrons and holes are trapped in the core and annular regions of the IrO{sub x} nanocrystals, respectively, which is explained by Gibbs free energy. High electron and hole-trapping densities are found to be 1.5 x 10{sup 13}/cm{sup 2} and 2 x 10{sup 13}/cm{sup 2}, respectively, due to the small size and high-density of IrO{sub x} nanocrystals. Excellent program/erase endurance of >10{sup 6} cycles and good retention of 10{sup 4} s with a good memory window of >1.2 V under a small operation voltage of {+-} 5 V are obtained. A large memory size of >10 Tbit/sq. in. can be designed by using the IrO{sub x} nanocrystals. This study is not only important for the IrO{sub x} nanocrystal charge-trapping memory investigation but it will also help to design future metal nanocrystal flash memory.

  12. Impact of metal nano layer thickness on tunneling oxide and memory performance of core-shell iridium-oxide nanocrystals

    International Nuclear Information System (INIS)

    Banerjee, W.; Maikap, S.; Tien, T.-C.; Li, W.-C.; Yang, J.-R.

    2011-01-01

    The impact of iridium-oxide (IrO x ) nano layer thickness on the tunneling oxide and memory performance of IrO x metal nanocrystals in an n-Si/SiO 2 /Al 2 O 3 /IrO x /Al 2 O 3 /IrO x structure has been investigated. A thinner (1.5 nm) IrO x nano layer has shown better memory performance than that of a thicker one (2.5 nm). Core-shell IrO x nanocrystals with a small average diameter of 2.4 nm and a high density of ∼2 x 10 12 /cm 2 have been observed by scanning transmission electron microscopy. The IrO x nanocrystals are confirmed by x-ray photoelectron spectroscopy. A large memory window of 3.0 V at a sweeping gate voltage of ±5 V and 7.2 V at a sweeping gate voltage of ± 8 V has been observed for the 1.5 nm-thick IrO x nano layer memory capacitors with a small equivalent oxide thickness of 8 nm. The electrons and holes are trapped in the core and annular regions of the IrO x nanocrystals, respectively, which is explained by Gibbs free energy. High electron and hole-trapping densities are found to be 1.5 x 10 13 /cm 2 and 2 x 10 13 /cm 2 , respectively, due to the small size and high-density of IrO x nanocrystals. Excellent program/erase endurance of >10 6 cycles and good retention of 10 4 s with a good memory window of >1.2 V under a small operation voltage of ± 5 V are obtained. A large memory size of >10 Tbit/sq. in. can be designed by using the IrO x nanocrystals. This study is not only important for the IrO x nanocrystal charge-trapping memory investigation but it will also help to design future metal nanocrystal flash memory.

  13. New insight of high temperature oxidation on self-exfoliation capability of graphene oxide

    Science.gov (United States)

    Liu, Yuhang; Zeng, Jie; Han, Di; Wu, Kai; Yu, Bowen; Chai, Songgang; Chen, Feng; Fu, Qiang

    2018-05-01

    The preparation of graphene oxide (GO) via Hummers method is usually divided into two steps: low temperature oxidation at 35 °C (step I oxidation) and high temperature oxidation at 98 °C (step II oxidation). However, the effects of these two steps on the exfoliation capability and chemical structure of graphite oxide remain unclear. In this study, both the functional group content of graphite oxide and the entire evolution of interlayer spacing were investigated during the two steps. Step I oxidation is a slowly inhomogeneous oxidation step to remove unoxidized graphite flakes. The prepared graphite oxide can be easily self-exfoliated but contains a lot of organic sulfur. During the first 20 min of step II oxidation, the majority of organic sulfur can be efficiently removed and graphite oxide still remains a good exfoliation capability due to sharp increasing of carboxyl groups. However, with a longer oxidation time at step II oxidation, the decrease of organic sulfur content is slowed down apparently but without any carboxyl groups forming, then graphite oxide finally loses self-exfoliation capability. It is concluded that a short time of step II oxidation can produce purer and ultralarge GO sheets via self-exfoliation. The pure GO is possessed with better thermal stability and liquid crystal behavior. Besides, reduced GO films prepared from step II oxidation show better mechanical and electric properties after reducing compared with that obtained only via step I oxidation.

  14. On the Role of the Electrical Field in Spark Plasma Sintering of UO2+x

    Science.gov (United States)

    Tyrpekl, Vaclav; Naji, Mohamed; Holzhäuser, Michael; Freis, Daniel; Prieur, Damien; Martin, Philippe; Cremer, Bert; Murray-Farthing, Mairead; Cologna, Marco

    2017-01-01

    The electric field has a large effect on the stoichiometry and grain growth of UO2+x during Spark Plasma Sintering. UO2+x is gradually reduced to UO2.00 as a function of sintering temperature and time. A gradient in the oxidation state within the pellets is observed in intermediate conditions. The shape of the gradient depends unequivocally on the direction of the electrical field. The positive surface of the pellet shows a higher oxidation state compared to the negative one. An area with larger grain size is found close to the positive electrode, but not in contact with it. We interpret these findings with the redistribution of defects under an electric field, which affect the stoichiometry of UO2+x and thus the cation diffusivity. The results bear implications for understanding the electric field assisted sintering of UO2 and non-stoichiometric oxides in general. PMID:28422164

  15. Nanopowder production by gas-embedded electrical explosion of wire

    International Nuclear Information System (INIS)

    Zou Xiao-Bing; Wang Xin-Xin; Jiang Wei-Hua; Mao Zhi-Guo

    2013-01-01

    A small electrical explosion of wire (EEW) setup for nanopowder production is constructed. It consists of a low inductance capacitor bank of 2 μF–4 μF typically charged to 8 kV−30 kV, a triggered gas switch, and a production chamber housing the exploding wire load and ambient gas. With the EEW device, nanosize powders of titanium oxides, titanium nitrides, copper oxides, and zinc oxides are successfully synthesized. The average particle size of synthesized powders under different experimental conditions is in a range of 20 nm−80 nm. The pressure of ambient gas or wire vapor can strongly affect the average particle size. The lower the pressure, the smaller the particle size is. For wire material with relatively high resistivity, such as titanium, whose deposited energy W d is often less than sublimation energy W s due to the flashover breakdown along the wire prematurely ending the Joule heating process, the synthesized particle size of titanium oxides or titanium nitrides increases with overheat coefficient k (k = W d /W s ) increasing. (physics of gases, plasmas, and electric discharges)

  16. Structural, Optical and Electrical Properties of Transparent Conducting Oxide Based on Al Doped ZnO Prepared by Spray Pyrolysis

    Directory of Open Access Journals (Sweden)

    Abdeslam DOUAYAR

    2014-05-01

    Full Text Available Aluminum doped zinc oxide (AZO thin films were deposited on glass substrates at 350 °C by spray pyrolysis technique. X-ray diffraction patterns show that the undoped and AZO films exhibit the hexagonal wűrtzite crystal structure with a preferential orientation along 2 direction. AFM images showed that AZO film with 3 % of Al has a uniform grain sizes with a surface roughness of about 24 nm. All films present a high transmittance in the visible range. Both undoped and AZO films were n-type degenerate semiconductor and the best electrical resistivity value was around 8.0 ´ 10- 2 W.cm obtained for 3 % Al content.

  17. X-ray Absorption Study of Graphene Oxide and Transition Metal Oxide Nanocomposites.

    Science.gov (United States)

    Gandhiraman, Ram P; Nordlund, Dennis; Javier, Cristina; Koehne, Jessica E; Chen, Bin; Meyyappan, M

    2014-08-14

    The surface properties of the electrode materials play a crucial role in determining the performance and efficiency of energy storage devices. Graphene oxide and nanostructures of 3d transition metal oxides were synthesized for construction of electrodes in supercapacitors, and the electronic structure and oxidation states were probed using near-edge X-ray absorption fine structure. Understanding the chemistry of graphene oxide would provide valuable insight into its reactivity and properties as the graphene oxide transformation to reduced-graphene oxide is a key step in the synthesis of the electrode materials. Polarized behavior of the synchrotron X-rays and the angular dependency of the near-edge X-ray absorption fine structures (NEXAFS) have been utilized to study the orientation of the σ and π bonds of the graphene oxide and graphene oxide-metal oxide nanocomposites. The core-level transitions of individual metal oxides and that of the graphene oxide nanocomposite showed that the interaction of graphene oxide with the metal oxide nanostructures has not altered the electronic structure of either of them. As the restoration of the π network is important for good electrical conductivity, the C K edge NEXAFS spectra of reduced graphene oxide nanocomposites confirms the same through increased intensity of the sp 2 -derived unoccupied states π* band. A pronounced angular dependency of the reduced sample and the formation of excitonic peaks confirmed the formation of extended conjugated network.

  18. On hybridising lettuce seedlings with nanoparticles and the resultant effects on the organisms' electrical characteristics.

    Science.gov (United States)

    Gizzie, Nina; Mayne, Richard; Patton, David; Kendrick, Paul; Adamatzky, Andrew

    2016-09-01

    Lettuce seedlings are attracting interest in the computing world due to their capacity to become hybrid circuit components, more specifically, in the creation of living 'wires'. Previous studies have shown that seedlings can be hybridised with gold nanoparticles and withstand mild electrical currents. In this study, lettuce seedlings were hybridised with a variety of metallic and non-metallic nanomaterials: carbon nanotubes, graphene oxide, aluminium oxide and calcium phosphate. Toxic effects and the following electrical properties were monitored: mean potential, resistance and capacitance. Macroscopic observations revealed only slight deleterious health effects after administration with one variety of particle, aluminium oxide. Mean potential in calcium phosphate-hybridised seedlings showed a considerable increase when compared with the control, whereas those administered with graphene oxide showed a small decrease; there were no notable variations across the remaining treatments. Electrical resistance decreased substantially in graphene oxide-treated seedlings whereas slight increases were shown following calcium phosphate and carbon nanotubes applications. Capacitance showed no considerable variation across treated seedlings. These results demonstrate that use of some nanomaterials, specifically graphene oxide and calcium phosphate, may be towards biohybridisation purposes including the generation of living 'wires'. Copyright © 2016 Elsevier Ireland Ltd. All rights reserved.

  19. Demonstration of high-performance p-type tin oxide thin-film transistors using argon-plasma surface treatments

    Science.gov (United States)

    Bae, Sang-Dae; Kwon, Soo-Hun; Jeong, Hwan-Seok; Kwon, Hyuck-In

    2017-07-01

    In this work, we investigated the effects of low-temperature argon (Ar)-plasma surface treatments on the physical and chemical structures of p-type tin oxide thin-films and the electrical performance of p-type tin oxide thin-film transistors (TFTs). From the x-ray photoelectron spectroscopy measurement, we found that SnO was the dominant phase in the deposited tin oxide thin-film, and the Ar-plasma treatment partially transformed the tin oxide phase from SnO to SnO2 by oxidation. The resistivity of the tin oxide thin-film increased with the plasma-treatment time because of the reduced hole concentration. In addition, the root-mean-square roughness of the tin oxide thin-film decreased as the plasma-treatment time increased. The p-type oxide TFT with an Ar-plasma-treated tin oxide thin-film exhibited excellent electrical performance with a high current on-off ratio (5.2 × 106) and a low off-current (1.2 × 10-12 A), which demonstrates that the low-temperature Ar-plasma treatment is a simple and effective method for improving the electrical performance of p-type tin oxide TFTs.

  20. Non-equilibrium oxidation states of zirconium during early stages of metal oxidation

    International Nuclear Information System (INIS)

    Ma, Wen; Yildiz, Bilge; Herbert, F. William; Senanayake, Sanjaya D.

    2015-01-01

    The chemical state of Zr during the initial, self-limiting stage of oxidation on single crystal zirconium (0001), with oxide thickness on the order of 1 nm, was probed by synchrotron x-ray photoelectron spectroscopy. Quantitative analysis of the Zr 3d spectrum by the spectrum reconstruction method demonstrated the formation of Zr 1+ , Zr 2+ , and Zr 3+ as non-equilibrium oxidation states, in addition to Zr 4+ in the stoichiometric ZrO 2 . This finding resolves the long-debated question of whether it is possible to form any valence states between Zr 0 and Zr 4+ at the metal-oxide interface. The presence of local strong electric fields and the minimization of interfacial energy are assessed and demonstrated as mechanisms that can drive the formation of these non-equilibrium valence states of Zr

  1. Studies on the Electrical Properties of Graphene Oxide-Reinforced Poly (4-Styrene Sulfonic Acid) and Polyvinyl Alcohol Blend Composites

    Science.gov (United States)

    Deshmukh, Kalim; Sankaran, Sowmya; Basheer Ahamed, M.; Khadheer Pasha, S. K.; Sadasivuni, Kishor Kumar; Ponnamma, Deepalekshmi; Al-Ali Almaadeed, Mariam; Chidambaram, K.

    In the present study, graphene oxide (GO)-reinforced poly (4-styrenesulfonic acid) (PSSA)/polyvinyl alcohol (PVA) blend composite films were prepared using colloidal blending technique at various concentrations of GO (0-3wt.%). The morphological investigations of the prepared composites were carried out using polarized optical microscopy and scanning electron microscopy. The electrical properties of composites were evaluated using an impedance analyzer in the frequency range 50Hz to 20MHz and temperature in the range 40-150∘C. Morphological studies infer that GO was homogeneously dispersed in the PSSA/PVA blend matrix. Investigations of electrical property indicate that the incorporation of GO into PSSA/PVA blend matrix resulted in the enhancement of the impedance (Z) and the quality factor (Q-factor) values. A maximum impedance of about 4.32×106Ω was observed at 50Hz and 90∘C for PSSA/PVA/GO composites with 3wt.% GO loading. The Q-factor also increased from 8.37 for PSSA/PVA blend to 59.8 for PSSA/PVA/GO composites with 3wt.% GO loading. These results indicate that PSSA/PVA/GO composites can be used for high-Q capacitor applications.

  2. Method of removing oxides of sulfur and oxides of nitrogen from exhaust gases

    Science.gov (United States)

    Walker, Richard J.

    1986-01-01

    A continuous method is presented for removing both oxides of sulfur and oxides of nitrogen from combustion or exhaust gases with the regeneration of the absorbent. Exhaust gas is cleaned of particulates and HCl by a water scrub prior to contact with a liquid absorbent that includes an aqueous solution of bisulfite and sulfite ions along with a metal chelate, such as, an iron or zinc aminopolycarboxylic acid. Following contact with the combustion gases the spent absorbent is subjected to electrodialysis to transfer bisulfite ions into a sulfuric acid solution while splitting water with hydroxide and hydrogen ion migration to equalize electrical charge. The electrodialysis stack includes alternate layers of anion selective and bipolar membranes. Oxides of nitrogen are removed from the liquid absorbent by air stripping at an elevated temperature and the regenerated liquid absorbent is returned to contact with exhaust gases for removal of sulfur oxides and nitrogen oxides.

  3. After oxidation, zinc nanoparticles lose their ability to enhance responses to odorants.

    Science.gov (United States)

    Hagerty, Samantha; Daniels, Yasmine; Singletary, Melissa; Pustovyy, Oleg; Globa, Ludmila; MacCrehan, William A; Muramoto, Shin; Stan, Gheorghe; Lau, June W; Morrison, Edward E; Sorokulova, Iryna; Vodyanoy, Vitaly

    2016-12-01

    Electrical responses of olfactory sensory neurons to odorants were examined in the presence of zinc nanoparticles of various sizes and degrees of oxidation. The zinc nanoparticles were prepared by the underwater electrical discharge method and analyzed by atomic force microscopy and X-ray photoelectron spectroscopy. Small (1.2 ± 0.3 nm) zinc nanoparticles significantly enhanced electrical responses of olfactory neurons to odorants. After oxidation, however, these small zinc nanoparticles were no longer capable of enhancing olfactory responses. Larger zinc oxide nanoparticles (15 nm and 70 nm) also did not modulate responses to odorants. Neither zinc nor zinc oxide nanoparticles produced olfactory responses when added without odorants. The enhancement of odorant responses by small zinc nanoparticles was explained by the creation of olfactory receptor dimers initiated by small zinc nanoparticles. The results of this work will clarify the mechanisms for the initial events in olfaction, as well as to provide new ways to alleviate anosmia related to the loss of olfactory receptors.

  4. Barium carbonate as an agent to improve the electrical properties of neodymium-barium-copper system at high temperature

    Energy Technology Data Exchange (ETDEWEB)

    Fernandes, J.P. [Post-Graduate Program in Chemical Engineering, Universidade Federal de Santa Catarina (UFSC), Florianópolis, SC, 88040-900 (Brazil); Duarte, G.W. [Post-Graduate Program in Chemical Engineering, Universidade Federal de Santa Catarina (UFSC), Florianópolis, SC, 88040-900 (Brazil); Research Group in Technology and Information, Centro Universitário Barriga Verde (UNIBAVE), Santa Catarina, SC (Brazil); Caldart, C. [Post-Graduate Program in Science and Materials Engineering, Universidade do Extremo Sul Catarinense (UNESC), Criciúma, SC, 88806-000 (Brazil); Kniess, C.T. [Post-Graduate Program in Professional Master in Management, Universidade Nove de Julho, São Paulo, SP (Brazil); Montedo, O.R.K.; Rocha, M.R. [Post-Graduate Program in Science and Materials Engineering, Universidade do Extremo Sul Catarinense (UNESC), Criciúma, SC, 88806-000 (Brazil); Riella, H.G. [Post-Graduate Program in Chemical Engineering, Universidade Federal de Santa Catarina (UFSC), Florianópolis, SC, 88040-900 (Brazil); Fiori, M.A., E-mail: fiori@unochapeco.edu.br [Post-Graduate Program in Environmental Science, Universidade Comunitária da Região de Chapecó (UNOCHAPECÓ), Chapecó, SC, 89809-000 (Brazil); Post-Graduate Program in Technology and Management of the Innovation, Universidade Comunitária da Região de Chapecó (UNOCHAPECÓ), Chapecó, SC, 89809-000 (Brazil)

    2015-11-15

    Specialized ceramics are manufactured under special conditions and contain specific elements. They possess unique electrical and thermal properties and are frequently used by the electronics industry. Ceramics containing neodymium-barium-copper (NBC) exhibit high conductivities at low temperatures. NBC-based ceramics are typically combined with oxides, i.e., NBCo produced from neodymium oxide, barium oxide and copper oxide. This study presents NBC ceramics that were produced with barium carbonate, copper oxide and neodymium oxide (NBCa) as starting materials. These ceramics have good electrical conductivities at room temperature. Their conductivities are temperature dependent and related to the starting amount of barium carbonate (w%). - Highlights: • The new crystalline structure were obtained due presence of the barium carbonate. • The NBCa compound has excellent electrical conductivity at room temperature. • The grain crystalline morphology was modified by presence of the barium carbonate. • New Phases α and β were introduced by carbonate barium in the NBC compound.

  5. Barium carbonate as an agent to improve the electrical properties of neodymium-barium-copper system at high temperature

    International Nuclear Information System (INIS)

    Fernandes, J.P.; Duarte, G.W.; Caldart, C.; Kniess, C.T.; Montedo, O.R.K.; Rocha, M.R.; Riella, H.G.; Fiori, M.A.

    2015-01-01

    Specialized ceramics are manufactured under special conditions and contain specific elements. They possess unique electrical and thermal properties and are frequently used by the electronics industry. Ceramics containing neodymium-barium-copper (NBC) exhibit high conductivities at low temperatures. NBC-based ceramics are typically combined with oxides, i.e., NBCo produced from neodymium oxide, barium oxide and copper oxide. This study presents NBC ceramics that were produced with barium carbonate, copper oxide and neodymium oxide (NBCa) as starting materials. These ceramics have good electrical conductivities at room temperature. Their conductivities are temperature dependent and related to the starting amount of barium carbonate (w%). - Highlights: • The new crystalline structure were obtained due presence of the barium carbonate. • The NBCa compound has excellent electrical conductivity at room temperature. • The grain crystalline morphology was modified by presence of the barium carbonate. • New Phases α and β were introduced by carbonate barium in the NBC compound

  6. Influence of the incorporation of titanium dioxide (TiO{sub 2}) on the morphological, structural and electrical properties of Graphene oxide (GO) thin films

    Energy Technology Data Exchange (ETDEWEB)

    Viana Junior, Emilson Ribeiro; Wegher, Gustavo; Deus, Jeferson Ferreira de, E-mail: emilsonjunior@utfpr.edu.br [Universidade Tecnologica Federal do Parana (UFTPR), Curitiba (Brazil)

    2016-07-01

    Full text: Carbon based nanostructures, as Carbon Nanotubes (CNT), Graphene (G) and Graphene Oxide (GO) have been extensively studied in the last years due to their unique electrical and optical properties. Recent research show that graphene can be used to improve the dispersion and stabilization of metal and metal-oxide nanostructures. Titanium dioxide (TiO{sub 2}) has been studied due to its non-toxicity, chemical stability and optoelectronic properties. However, the recombination of photoinduced electrons and holes limits its use on optoelectronic devices. To improve the charge separation efficiency of TiO{sub 2}, much effort has been focused on TiO{sub 2} nanocomposites. In this work, thin films devices of GO and Graphene Oxide with TiO{sub 2} (GO-TiO{sub 2}) were prepared using an alternative chemical route based on the Hummer’s method. The morphology and crystalline structure of the GO and GO with TiO{sub 2} thin films was investigated by X-ray power diffraction (XRD) and scanning electron microscopy (SEM). Was found that the anatase TiO{sub 2} TF were incorporated on the GO structure. Ultraviolet-visible spectroscopy (UV-vis) and Fourier transform infrared spectroscopy (FTIR) were also performed in order to corroborate with the results of XRD and SEM obtained. The electrical characterization of the GO and GO-TiO{sub 2} TF were performed using the four-probe van der Pauw method. The resistivity, density and the mobility of the carriers in the TFs were determined as a function of temperature. It was found that the electrical resistivity, the concentration of the free-carriers, the activation energy, and the capacitance of the device decrease due to the incorporation of TiO{sub 2} on GO, but the mobility increases. Due to low values of the activation energy the density of carriers thermally induced was high enough that lead to a metal-to insulator transition near room temperature. The ratio TiO{sub 2}:GO will be studied, in order to provide the best

  7. Effects of argon flow rate on electrical properties of amorphous indium gallium zinc oxide thin-film transistors

    Energy Technology Data Exchange (ETDEWEB)

    Sahoo, A.K.; Wu, G.M., E-mail: wu@mail.cgu.edu.tw

    2016-04-30

    In this report, amorphous indium gallium zinc oxide (a-IGZO) thin films were deposited on glass substrates using different argon flow rates (AFRs). The impact on the electrical properties of the a-IGZO thin-film transistors with various AFRs during film growth has been carefully investigated. The AFR varied 20–60 sccm while the oxygen flow rate was maintained at 1 sccm. All a-IGZO films achieved transmittance higher than 80% in the wavelength range of 350–1000 nm, and it increased slightly with increasing AFR in the higher wavelength region. The rise in partial pressure due to increased AFR could affect the performance, in particular by increasing the current on/off ratio, and changes in electron mobility, sub-threshold swing voltage and threshold voltage. The optimal results were attained at AFR of 50 sccm. The field effect mobility, sub-threshold swing, ratio of on-current to the off-current, interfacial trap density and threshold voltage are 27.7 cm{sup 2}/V·s, 0.11 V/dec, 2.9 × 10{sup 8}, 1.1 × 10{sup 12} cm{sup −2} eV{sup −1} and 0.84 V, respectively. In addition, good electrical properties were achieved using dielectric SiO{sub 2} prepared by simple, low-cost electron beam evaporator system. - Highlights: • IGZO thin films RF-sputtered on glass substrates under various Ar to oxygen flow rates • The electrical performances and thin film quality of a-IGZO TFT were characterized. • High mobility 27.7 cm{sup 2}/V·s and very small sub-threshold voltage 0.11 V/decade obtained. • Simple and low cost electron-beam deposited SiO{sub 2} used as gate dielectric. • Ohmic behavior of source–drain with channel material has been achieved.

  8. Effects of argon flow rate on electrical properties of amorphous indium gallium zinc oxide thin-film transistors

    International Nuclear Information System (INIS)

    Sahoo, A.K.; Wu, G.M.

    2016-01-01

    In this report, amorphous indium gallium zinc oxide (a-IGZO) thin films were deposited on glass substrates using different argon flow rates (AFRs). The impact on the electrical properties of the a-IGZO thin-film transistors with various AFRs during film growth has been carefully investigated. The AFR varied 20–60 sccm while the oxygen flow rate was maintained at 1 sccm. All a-IGZO films achieved transmittance higher than 80% in the wavelength range of 350–1000 nm, and it increased slightly with increasing AFR in the higher wavelength region. The rise in partial pressure due to increased AFR could affect the performance, in particular by increasing the current on/off ratio, and changes in electron mobility, sub-threshold swing voltage and threshold voltage. The optimal results were attained at AFR of 50 sccm. The field effect mobility, sub-threshold swing, ratio of on-current to the off-current, interfacial trap density and threshold voltage are 27.7 cm"2/V·s, 0.11 V/dec, 2.9 × 10"8, 1.1 × 10"1"2 cm"−"2 eV"−"1 and 0.84 V, respectively. In addition, good electrical properties were achieved using dielectric SiO_2 prepared by simple, low-cost electron beam evaporator system. - Highlights: • IGZO thin films RF-sputtered on glass substrates under various Ar to oxygen flow rates • The electrical performances and thin film quality of a-IGZO TFT were characterized. • High mobility 27.7 cm"2/V·s and very small sub-threshold voltage 0.11 V/decade obtained. • Simple and low cost electron-beam deposited SiO_2 used as gate dielectric. • Ohmic behavior of source–drain with channel material has been achieved.

  9. Electric field and temperature effects in irradiated MOSFETs

    Energy Technology Data Exchange (ETDEWEB)

    Silveira, M. A. G., E-mail: marcilei@fei.edu.br; Santos, R. B. B.; Leite, F. G.; Araújo, N. E.; Cirne, K. H.; Melo, M. A. A.; Rallo, A. [Centro Universitário da FEI, São Bernardo do Campo, S.P. (Brazil); Aguiar, Vitor A. P.; Aguirre, F.; Macchione, E. L. A.; Added, N.; Medina, N. H. [Instituto de Física da USP, São Paulo, S.P. (Brazil)

    2016-07-07

    Electronic devices exposed to ionizing radiation exhibit degradation on their electrical characteristics, which may compromise the functionality of the device. Understanding the physical phenomena responsible for radiation damage, which may be specific to a particular technology, it is of extreme importance to develop methods for testing and recovering the devices. The aim of this work is to check the influence of thermal annealing processes and electric field applied during irradiation of Metal Oxide Semiconductor Field Effect Transistors (MOSFET) in total ionizing dose experiments analyzing the changes in the electrical parameters in these devices.

  10. Study of oxide/metal/oxide thin films for transparent electronics and solar cells applications by spectroscopic ellipsometry

    Directory of Open Access Journals (Sweden)

    Mihaela Girtan

    2017-05-01

    Full Text Available A comprehensive study of a class of Oxide/Metal/Oxide (Oxide = ITO, AZO, TiO2 and Bi2O3, Metal = Au thin films was done by correlating the spectrophotometric studies with the ellispometric models. Films were deposited by successive sputtering from metallic targets In:Sn, Zn:Al, Ti and Bi in reactive atmosphere (for the oxide films and respective inert atmosphere (for the metallic Au interlayer films on glass substrates. The measurements of optical constants n—the refractive index and k—the extinction coefficient, at different incident photon energies for single oxide films and also for the three layers films oxide/metal/oxide samples were made using the spectroscopic ellipsometry (SE technique. The ellipsometry modelling process was coupled with the recorded transmission spectra data of a double beam spectrophotometer and the best fitting parameters were obtained not only by fitting the n and k experimental data with the dispersion fitting curves as usual is practiced in the most reported data in literature, but also by comparing the calculated the transmission coefficient from ellipsometry with the experimental values obtained from direct spectrophotometry measurements. In this way the best dispersion model was deduced for each sample. Very good correlations were obtained for the other different thin films characteristics such as the films thickness, optical band gap and electrical resistivity obtained by other measurements and calculation techniques. The ellipsometric modelling, can hence give the possibility in the future to predict, by ellipsometric simulations, the proper device architecture in function of the preferred optical and electrical properties.

  11. Mesoporous tin-doped indium oxide thin films: effect of mesostructure on electrical conductivity

    Directory of Open Access Journals (Sweden)

    Till von Graberg, Pascal Hartmann, Alexander Rein, Silvia Gross, Britta Seelandt, Cornelia Röger, Roman Zieba, Alexander Traut, Michael Wark, Jürgen Janek and Bernd M Smarsly

    2011-01-01

    Full Text Available We present a versatile method for the preparation of mesoporous tin-doped indium oxide (ITO thin films via dip-coating. Two poly(isobutylene-b-poly(ethyleneoxide (PIB-PEO copolymers of significantly different molecular weight (denoted as PIB-PEO 3000 and PIB-PEO 20000 are used as templates and are compared with non-templated films to clarify the effect of the template size on the crystallization and, thus, on the electrochemical properties of mesoporous ITO films. Transparent, mesoporous, conductive coatings are obtained after annealing at 500 °C; these coatings have a specific resistance of 0.5 Ω cm at a thickness of about 100 nm. Electrical conductivity is improved by one order of magnitude by annealing under a reducing atmosphere. The two types of PIB-PEO block copolymers create mesopores with in-plane diameters of 20–25 and 35–45 nm, the latter also possessing correspondingly thicker pore walls. Impedance measurements reveal that the conductivity is significantly higher for films prepared with the template generating larger mesopores. Because of the same size of the primary nanoparticles, the enhanced conductivity is attributed to a higher conduction path cross section. Prussian blue was deposited electrochemically within the films, thus confirming the accessibility of their pores and their functionality as electrode material.

  12. Electroplating of Protective Coatings on Interconnects Used for Solid Oxide Fuel Cell Stacks

    DEFF Research Database (Denmark)

    Harthøj, Anders

    Solid oxide fuel Cell (SOFC) technology can with a high efficiency produce environmentally clean electricity by converting the chemical energy in a fuel to electrical energy. SOFC systems have a high operation temperature, approx. 600-850 °C. Advantages compared to other types of fuel cells......, are they can utilize a wide range of fuels, e.g. hydrogen, natural gas and methanol, do not contain noble metals and have a high efficiency. A major obstacle to the commercialization of SOFC technology is the high degradation rates and costs of the systems. A significant source of degradation is high...... on the side facing its anode. Two high temperature corrosion issues, which both affect the air side of the interconnect, are especially significant, both of: Formation of thick oxide scales on its surface and evaporation of chromium species from the oxide. The oxide scales increases the electrical resistance...

  13. Pulsed electric field improves the bioprotective capacity of purées for different coloured carrot cultivars against H2O2-induced oxidative damage.

    Science.gov (United States)

    Leong, Sze Ying; Oey, Indrawati; Burritt, David John

    2016-04-01

    This research aimed to study the effect of pulsed electric field (PEF) processing on the bioprotective capacity of carrot purée for White Belgian, Yellow Solar, Nantes, Nutri Red and Purple Haze cultivars against H2O2-induced oxidative damage. The bioprotective capacity was determined using cell viability, membrane integrity and nitric oxide (NO) production in a human Caco-2 cell culture assay. Total carotenoids, total anthocyanins, total vitamin C and total phenolics were also evaluated. Compared to the untreated purée, Purple Haze and Nutri Red processed at 303 kJ/kg completely increased Caco-2 cells resistance towards oxidative damage by recovering the cell viability and inhibiting NO production. For cultivar with low carotenoid levels, i.e. Yellow Solar, the application of 0.8 kV/cm resulted in a higher total carotenoid content in the purée than its untreated counterpart, leading to an improved bioprotective effect. This study clearly shows that PEF could add value to carrots by maximising bioprotective effects. Copyright © 2015 Elsevier Ltd. All rights reserved.

  14. Surface electrical properties of stainless steel fibres: An AFM-based study

    International Nuclear Information System (INIS)

    Yin, Jun; D’Haese, Cécile; Nysten, Bernard

    2015-01-01

    Highlights: • Surface electrical conductivity of stainless steel fibre is measured and mapped by CS-AFM. • Surface potential of stainless steel fibre is measured and mapped by KPFM. • Surface electronic properties are governed by the chromium oxide passivation layer. • Electron tunnelling through the passivation layer is the dominant mechanisms for conduction. - Abstract: Atomic force microscopy (AFM) electrical modes were used to study the surface electrical properties of stainless steel fibres. The surface electrical conductivity was studied by current sensing AFM and I–V spectroscopy. Kelvin probe force microscopy was used to measure the surface contact potential. The oxide film, known as passivation layer, covering the fibre surface gives rise to the observation of an apparently semiconducting behaviour. The passivation layer generally exhibits a p-type semiconducting behaviour, which is attributed to the predominant formation of chromium oxide on the surface of the stainless steel fibres. At the nanoscale, different behaviours are observed from points to points, which may be attributed to local variations of the chemical composition and/or thickness of the passivation layer. I–V curves are well fitted with an electron tunnelling model, indicating that electron tunnelling may be the predominant mechanism for electron transport

  15. Thermal and Electrical Characterization of the Carbon Nanofibers Based Cement Composites

    Directory of Open Access Journals (Sweden)

    Agnieszka ŚLOSARCZYK

    2017-08-01

    Full Text Available The paper describes the influence of chemical modification of vapor grown carbon nanofibers (VGCnFs on the thermal and electrical properties of the cement composites. The surface modification of nanofibers was performed by means of ozone and nitric acid treatments. It was shown that the oxidized carbon nanofibers surface plays an important role in shaping the mechanical and especially electrical properties of cement composite. For cement matrix modified with carbon nanofibers subjected to oxidized treatment, the slightly increase of cement paste resistivity was observed. It confirms the better adhesion of carbon nanofibers to cement paste. However, independently of carbon nanofibers modification, the occurrence of VGCnFs in cement paste increased the electrical conductivity of the composite in comparison to the cement paste without fibers. The obtained values of electrical resistivity were comparable with values of cement composites modified with 4 mm long carbon fibers. Moreover, it was shown that the chemical modification of carbon nanofibers surface does not influence on the thermal properties of cement composites. In case of cement paste with unmodified and modified carbon nanofibers, the Seebeck voltage was proportional to the temperature difference and was independent of the oxidation degree of carbon nanofibers.DOI: http://dx.doi.org/10.5755/j01.ms.23.2.14993

  16. Laser ablation of titanium in liquid in external electric field

    Energy Technology Data Exchange (ETDEWEB)

    Serkov, A.A. [Wave Research Center of A.M. Prokhorov General Physics Institute of the Russian Academy of Sciences, 38, Vavilov Street, 119991 Moscow (Russian Federation); The Federal State Educational Institution of Higher Professional Education, “Moscow Institute of Physics and Technology (State University)”, 9 Institutskiy per., 141700, Dolgoprudny, Moscow Region (Russian Federation); Barmina, E.V., E-mail: barminaev@gmail.com [Wave Research Center of A.M. Prokhorov General Physics Institute of the Russian Academy of Sciences, 38, Vavilov Street, 119991 Moscow (Russian Federation); Shafeev, G.A. [Wave Research Center of A.M. Prokhorov General Physics Institute of the Russian Academy of Sciences, 38, Vavilov Street, 119991 Moscow (Russian Federation); National Research Nuclear University MEPhI (Moscow Engineering Physics Institute), 31, Kashirskoye Highway, 115409 Moscow (Russian Federation); Voronov, V.V. [A.M. Prokhorov General Physics Institute of the Russian Academy of Sciences, 38, Vavilov Street, 119991 Moscow (Russian Federation)

    2015-09-01

    Highlights: • Ablation of a bulk Ti target by 10 ps laser pulses in liquid is experimentally studied in external DC electric field. • Applied cathodic bias leads to increase in average size of self-organized nanostructures formed upon ablation of titanium target. • Laser ablation of Ti target in external electric field results in generation of elongated titanium oxide nanoparticles. - Abstract: Ablation of a bulk Ti target by 10 ps laser pulses in water is experimentally studied in external DC electric field. It is demonstrated that both lateral size of nanostructures (NS) on Ti surface and their density depend on the electric field applied to the target. Scanning Electron Microscopy of NS reveals the shift of their size distribution function toward larger sizes with applied field (cathodic bias, 25 V DC). Density of mushroom-like NS with applied electric field amounts to 10{sup 10} cm{sup −2}. X-ray diffraction of generated nanoparticles (NPs) shows difference in the crystallographic structure of NPs of non-stoichiometric Ti oxides generated with and without electric field. This conclusion is corroborated with the optical absorption spectroscopy of obtained colloids. Transmission Electron Microscopy of NPs also shows difference in morphology of particles produced with and without cathodic bias. The results are interpreted on the basis of instability of the melt on Ti surface in the electric field.

  17. Towards Electrically Pumped Nanolasers for Terabit Communication

    DEFF Research Database (Denmark)

    Lupi, Alexandra

    This thesis deals with modeling, design, fabrication and characterization of vertically electrically pumped photonic crystal light-emitting devices. For this purpose a new material platform of III-V semiconductors on silicon has been developed. The devices fabricated on this platform can be used...... as optical interconnects, where compatibility with Complementary Metal Oxide Semiconductor (CMOS) technology is required. The first part of this work is dedicated to modeling and simulations of electrically pumped photonic crystal nanolasers with diverse material configurations and different concepts...... for electrical injection. The analysis of the models is conducted with focus on laser performances, energy efficiency, and thermal properties. The second part of this thesis deals with design, fabrication and characterization of vertically electrically pumped photonic crystal light-emitting devices. The devices...

  18. Carbon contaminant in the ion processing of aluminum oxide film

    International Nuclear Information System (INIS)

    Chaug, Y.; Roy, N.

    1989-01-01

    Ion processing can induce contamination on the bombarded surface. However, this process is essential for the microelectronics device fabrication. Auger electron spectroscopy has been used to study the simultaneous deposition of carbon impurity during ion bombardment of magnetron rf-sputtering deposited aluminum oxide film. Ion bombardment on aluminum oxide results in a preferential removal of surface oxygen and a formation of a metastable state of aluminum suboxide. Cosputtered implanted carbon contaminant appears to have formed a new state of stoichiometry on the surface of the ion bombarded aluminum oxide and existed as an aluminum carbide. This phase has formed due to the interaction of the implanted carbon and the aluminum suboxide. The Ar + ion sputter etching rate is reduced for the carbon contaminated oxide. The electrical resistance of the aluminum oxide between two gold strips has been measured. It is found that the electrical resistance is also reduced due to the formation of the new stoichiometry on the surface

  19. Magnetic ordering and electrical resistivity in Co{sub 0.2}Zn{sub 0.8}Fe{sub 2}O{sub 4} spinel oxide

    Energy Technology Data Exchange (ETDEWEB)

    Bhowmik, R.N. [Experimental Condensed Matter Physics Division, Saha Institute of Nuclear Physics, 1/AF, Bidhannagar, Kolkata 700065 (India)], E-mail: rabindranath.bhowmik@saha.ac.in; Ranganathan, R. [Experimental Condensed Matter Physics Division, Saha Institute of Nuclear Physics, 1/AF, Bidhannagar, Kolkata 700065 (India); Ghosh, B.; Kumar, S. [Department of Physics, Jadavpur University, Kolkata 700 032 (India); Chattopadhyay, S. [Department of Physics, University of Calcutta, 92, A.P.C. Road, Kolkata 700009 (India)

    2008-05-29

    We report the magnetic, Moessbauer spectroscopy and resistivity measurements in order to understand the electronic behaviour of bulk Co{sub 0.2}Zn{sub 0.8}Fe{sub 2}O{sub 4} spinel oxide. The effect of magnetic order on electrical behaviour is observed from the resistivity measurements in the absence and presence of magnetic field. The analysis of Moessbauer spectra suggests the absence of Fe{sup 2+} ions in the system, which implies that complete hopping of charge carriers between localized Fe{sup 3+}/Co{sup 2+} and Fe{sup 2+}/Co{sup 3+} pair of ions in B sublattice is not the favourable mechanism in Co{sub 0.2}Zn{sub 0.8}Fe{sub 2}O{sub 4}. We suggest that electrical behaviour of the present sample may be consistent with a model of fractional charge transfer via Fe{sub B}{sup 3+}-O{sup 2-}-Co{sub B}{sup 2+} superexchange path.

  20. The optical and electrical properties of graphene oxide with water-soluble conjugated polymer composites by radiation.

    Science.gov (United States)

    Jungo, Seung Tae; Oh, Seung-Hwan; Kim, Hyun Bin; Jeun, Joon-Pyo; Lee, Bum-Jae; Kang, Phil-Hyun

    2013-11-01

    In order to overcome the difficulty of dispersion and low conductivity in composite containing graphene, graphene oxide (GO) has been used instead of neat graphene. And the GO treated by radiation, could give improved conductivity of the GO-containing polymer composite. In this study, fluorene based water-soluble conjugated polymer (WPF-6-oxy-F) was introduced in GO solution to investigate the change of optical and electrical properties through radiation process. UV-Vis absorption of irradiated WPF-6-oxy-F-GO composite was red shifted and I(D)/I(G) ratio of Raman spectra decreased. XPS analysis showed that C-N bonds was formed after the irradiation and confirmed the increased bonds between the GO and the water-soluble conjugated polymer matrix. From the AFM and XPS analysis, it was found that the water-soluble conjugated polymer matrix was stacked between the modified GO in the morphology of irradiated WPF-6-oxy-F-GO composite was increased after gamma ray irradiation up to 10(-2) S/cm.

  1. Variable valence of praseodymium in rare-earth oxide solid solutions

    International Nuclear Information System (INIS)

    Kravchinskaya, M.V.; Merezhinskii, K.Y.; Tikhonov, P.A.

    1986-01-01

    Solid solutions of elevated praseodymium oxide content have interesting electrical properties, making them the basis for the manufacture of high-temperature electrically conducting materials. Establishment of the composition-structure-valence state relationships enables control of the material properties. The authors performed investigations using a thermogravimetric apparatus with an electronic microbalance of type EM-5-3M, and using x-ray phase analysis of powders (DRON-1 diffractometer, CuK /SUB alpha/ -radiation). The authors also studied the kinetics of praseodymium oxidation with a thermogravimetric apparatus under isothermal conditions. Evaluation of the results with the equation of Kolmogorov, Erofeev, and Avraam indicates that the process is limited by the chemical oxidation of praseodymium and not by diffusion

  2. Zinc oxide tetrapod: a morphology with multifunctional applications

    International Nuclear Information System (INIS)

    Modi, Gaurav

    2015-01-01

    Zinc oxide has emerged as a material of great interest due to its unique optical, electrical and magnetic properties. This review comprehensively covers the various aspects of zinc oxide tetrapods. Tetrapod is a one dimensional zinc oxide nano-microstructure and has been found to have very promising applications in diverse fields. The growth model, properties, synthesis methods and variations in the tetrapod morphology by varying the synthesis conditions have been discussed. The promising applications of zinc oxide tetrapod morphology have been also discussed in detail. (review)

  3. TRANSPARENT CONDUCTING OXIDE SYNTHESIS OF ALUMINIUM DOPED ZINC OXIDES BY CHEMICAL COPRECIPITATION

    Directory of Open Access Journals (Sweden)

    Silvia Maioco

    2013-03-01

    Full Text Available Aluminium doped zinc oxides (AZO are promising replacements for tin doped indium oxides (ITO but thin films show a wide range of physical properties strongly dependent on deposition process conditions. Submicrometric 1% aluminum doped zinc oxide ceramics (AZO are examined, prepared by coprecipitation, from Zn(NO32 and Al(NO33 aqueous solutions, sintered at 1200°C and subsequently annealed in 10-16 atm controlled oxygen fugacity atmospheres, at 1000°C. Electrical resistivity diminishes by two orders of magnitude after two hours of annealing and the Seebeck coefficient gradually changes from -140 to -50 µV/K within 8 h. It is concluded that increased mobility is dominant over the increased carrier density, induced by changes in metal-oxygen stoichiometry

  4. Study of electrical fatigue by defect engineering in organic light-emitting diodes

    International Nuclear Information System (INIS)

    Gassmann, Andrea; Yampolskii, Sergey V.; Klein, Andreas; Albe, Karsten; Vilbrandt, Nicole; Pekkola, Oili; Genenko, Yuri A.; Rehahn, Matthias; Seggern, Heinz von

    2015-01-01

    Graphical abstract: - Highlights: • Electrical fatigue is investigated in PPV-based polymer light-emitting diodes. • Bromide defects remaining from Gilch synthesis limit PLED lifetime. • Electrical stress yields lower hole mobility and transition to dispersive transport. • Triplet excitons reduce lifetime and EL-emission-induced degradation observed. • Self-consistent drift-diffusion model for charge carrier injection and transport. - Abstract: In this work the current knowledge on the electrical degradation of polymer-based light-emitting diodes is reviewed focusing especially on derivatives of poly(p-phenylene-vinylene) (PPV). The electrical degradation will be referred to as electrical fatigue and is understood as mechanisms, phenomena and material properties that change during continuous operation of the device at constant current. The focus of this review lies especially on the effect of chemical synthesis on the transport properties of the organic semiconductor and the device lifetimes. In addition, the prominent transparent conductive oxide indium tin oxide as well as In 2 O 3 will be reviewed and how their properties can be altered by the processing conditions. The experiments are accompanied by theoretical modeling shining light on how the change of injection barriers, charge carrier mobility or trap density influence the current–voltage characteristics of the diodes and on how and which defects form in transparent conductive oxides used as anode

  5. Cycle Life of Commercial Lithium-Ion Batteries with Lithium Titanium Oxide Anodes in Electric Vehicles

    Directory of Open Access Journals (Sweden)

    Xuebing Han

    2014-07-01

    Full Text Available The lithium titanium oxide (LTO anode is widely accepted as one of the best anodes for the future lithium ion batteries in electric vehicles (EVs, especially since its cycle life is very long. In this paper, three different commercial LTO cells from different manufacturers were studied in accelerated cycle life tests and their capacity fades were compared. The result indicates that under 55 °C, the LTO battery still shows a high capacity fade rate. The battery aging processes of all the commercial LTO cells clearly include two stages. Using the incremental capacity (IC analysis, it could be judged that in the first stage, the battery capacity decreases mainly due to the loss of anode material and the degradation rate is lower. In the second stage, the battery capacity decreases much faster, mainly due to the degradation of the cathode material. The result is important for the state of health (SOH estimation and remaining useful life (RUL prediction of battery management system (BMS for LTO batteries in EVs.

  6. Characterization of platinum catalysts supported on substoichiometric oxides of Zr, Ti and Ce by the electric impedance spectroscopy

    International Nuclear Information System (INIS)

    Eder, D.

    2003-09-01

    energy of 120 kJ/mol, their number being ten times larger than for titania. Additionally, the influence of the water vapour pressure is stronger than in TiO 2 (power -2/3). With the electric impedance spectroscopy it is possible to decouple single processes of an electrochemical system with different time scales by measuring the impedance over a large frequency range (1 'micro' Hz < f < 1 MHz). The measurements were carried out in different gas atmospheres using the 2-pole method with gold electrodes. Therefore, it was possible to study the electric behavior of the oxides in oxidizing and reducing atmospheres and under dry and wet conditions. (author)

  7. Features of the theories of the formation of oxide films on aluminum alloys piston diesel engines with micro-arc oxidation

    Directory of Open Access Journals (Sweden)

    Skryabin M.L.

    2017-12-01

    Full Text Available The article considers one of the promising methods of surface hardening of piston aluminum alloy – microarc oxidation. Described fundamental differences from the micro-arc oxidation anodizing and similar electrochemical processes. The schemes of formation of the barrier and outer layers surface treatment in aqueous electrolytes. Shows the mechanism of formation of the interface. Considers the formation of layers with high porosity and method of exposure. Also describes the exponential dependence of the current density from the electric field in the surface film of the base metal. The role of discharges in the formation of oxide layers on the treated surface. Proposed and described features of the three main theories of formation of oxide films on the surface of the piston: physical and geometrical model of Keller; models of formation of oxide films as a colloid formations and plasma theory (theory of oxidation with the formation of plasma in the zone of oxidation. The features of formation of films in each of the models. For the model of Keller porous oxide film is a close-Packed oxide cell, having the shape of a prism. They are based on a hexagonal prism. These cells have normal orientation to the surface of the metal. In the center of the unit cell there is one season that is a channel, whose size is determined by the composition of the electrolyte, the chemical composition of the base metal and the electrical parameters of the process of oxidation. In the micro-arc oxidation process according to this model, the beginning of the formation of cells occurs with the formation of the barrier layer, passing in the porous layer and, over time, the elonga-tion of the pores, due to the constant etching electrolyte. In the theory of formation of the oxide films as kolloidnyh formations revealed that formation of pores in the film is a result of their growth. The anodic oxide is represented by a directed electric field, the alumina gel colloidal and

  8. Electrically nonconductive shield for electric equipment generating ionizing radiation

    International Nuclear Information System (INIS)

    Aitken, D.

    1979-01-01

    As a radiation protection shield there is proposed a nonconductive shield fabricated from epoxides or other plastics material and containing finely dispersed radiation absorbing metal. It is to be designed in such a way that it lies in the range of a high electric gradient in the equipment, close to the radiation-producing component. As suitable metals there are mentioned tin, tungsten, and lead resp. their oxides. As an example there is used an X-ray shielding. (RW) 891 RW/RW 892 MKO [de

  9. Improvement of Electrical Characteristics and Stability of Amorphous Indium Gallium Zinc Oxide Thin Film Transistors Using Nitrocellulose Passivation Layer.

    Science.gov (United States)

    Shin, Kwan Yup; Tak, Young Jun; Kim, Won-Gi; Hong, Seonghwan; Kim, Hyun Jae

    2017-04-19

    In this research, nitrocellulose is proposed as a new material for the passivation layers of amorphous indium gallium zinc oxide thin film transistors (a-IGZO TFTs). The a-IGZO TFTs with nitrocellulose passivation layers (NC-PVLs) demonstrate improved electrical characteristics and stability. The a-IGZO TFTs with NC-PVLs exhibit improvements in field-effect mobility (μ FE ) from 11.72 ± 1.14 to 20.68 ± 1.94 cm 2 /(V s), threshold voltage (V th ) from 1.85 ± 1.19 to 0.56 ± 0.35 V, and on/off current ratio (I on/off ) from (5.31 ± 2.19) × 10 7 to (4.79 ± 1.54) × 10 8 compared to a-IGZO TFTs without PVLs, respectively. The V th shifts of a-IGZO TFTs without PVLs, with poly(methyl methacrylate) (PMMA) PVLs, and with NC-PVLs under positive bias stress (PBS) test for 10,000 s represented 5.08, 3.94, and 2.35 V, respectively. These improvements were induced by nitrogen diffusion from NC-PVLs to a-IGZO TFTs. The lone-pair electrons of diffused nitrogen attract weakly bonded oxygen serving as defect sites in a-IGZO TFTs. Consequently, the electrical characteristics are improved by an increase of carrier concentration in a-IGZO TFTs, and a decrease of defects in the back channel layer. Also, NC-PVLs have an excellent property as a barrier against ambient gases. Therefore, the NC-PVL is a promising passivation layer for next-generation display devices that simultaneously can improve electrical characteristics and stability against ambient gases.

  10. Electrical properties of polyimides containing a near-surface deposit of silver

    Science.gov (United States)

    Rancourt, J. D.; Porta, G. M.; Taylor, L. T.

    1987-01-01

    Films containing a surface or near-surface deposit of palladium, gold or copper metal as well as tin, cobalt, copper, or lithium oxides have been prepared by dissolving appropriate metal salts into poly(amide-acid)/N,N-dimethylacetamide solutions and curing the solvent cast films to temperatures up to 300 C. This preparation technique has been extended to evaluate the thermal, spectroscopic, and electrical characteristics of condensation polyimide films modified with silver nitrate. A near-surface deposit of metallic silver results but the reflective surface has high electrical resistivity (sheet resistivity) due to a polymer coating or overlayer above the metal. Details pertaining to the silver nitrate modified condensation polyimides are presented. Also, the applicability of the structural model and electrical model previously proposed for the cobalt oxide system are assessed.

  11. Current Status and Future Prospects of Copper Oxide Heterojunction Solar Cells

    OpenAIRE

    Terence K. S. Wong; Siarhei Zhuk; Saeid Masudy-Panah; Goutam K. Dalapati

    2016-01-01

    The current state of thin film heterojunction solar cells based on cuprous oxide (Cu2O), cupric oxide (CuO) and copper (III) oxide (Cu4O3) is reviewed. These p-type semiconducting oxides prepared by Cu oxidation, sputtering or electrochemical deposition are non-toxic, sustainable photovoltaic materials with application potential for solar electricity. However, defects at the copper oxide heterojunction and film quality are still major constraining factors for achieving high power conversion e...

  12. Erasing the Epigenetic Memory and Beginning to Switch—The Onset of Antigenic Switching of var Genes in Plasmodium falciparum

    Science.gov (United States)

    Fastman, Yair; Noble, Robert; Recker, Mario; Dzikowski, Ron

    2012-01-01

    Antigenic variation in Plasmodium falciparum is regulated by transcriptional switches among members of the var gene family, each expressed in a mutually exclusive manner and encoding a different variant of the surface antigens collectively named PfEMP1. Antigenic switching starts when the first merozoites egress from the liver and begin their asexual proliferation within red blood cells. By erasing the epigenetic memory we created parasites with no var background, similar to merozoites that egress from the liver where no var gene is expressed. Creating a null-var background enabled us to investigate the onset of antigenic switches at the early phase of infection. At the onset of switching, var transcription pattern is heterogeneous with numerous genes transcribed at low levels including upsA vars, a subtype that was implicated in severe malaria, which are rarely activated in growing cultures. Analysis of subsequent in vitro switches shows that the probability of a gene to turn on or off is not associated with its chromosomal position or promoter type per se but on intrinsic properties of each gene. We concluded that var switching is determined by gene specific associated switch rates rather than general promoter type or locus associated switch rates. In addition, we show that fine tuned reduction in var transcription increases their switch rate, indicating that transcriptional perturbation can alter antigenic switching. PMID:22461905

  13. Oxidation behavior of multiwall carbon nanotubes with different diameters and morphology

    Energy Technology Data Exchange (ETDEWEB)

    Mazov, Ilya, E-mail: ilya.mazov@gmail.com [Boreskov Institute of Catalysis, Lavrentieva ave. 5, Novosibirsk, 630090 (Russian Federation); Kuznetsov, Vladimir L. [Boreskov Institute of Catalysis, Lavrentieva ave. 5, Novosibirsk, 630090 (Russian Federation); Novosibirsk State University, Pirogova st. 2, Novosibirsk, 630090 (Russian Federation); Simonova, Irina A. [Boreskov Institute of Catalysis, Lavrentieva ave. 5, Novosibirsk, 630090 (Russian Federation); Stadnichenko, Andrey I. [Boreskov Institute of Catalysis, Lavrentieva ave. 5, Novosibirsk, 630090 (Russian Federation); Novosibirsk State University, Pirogova st. 2, Novosibirsk, 630090 (Russian Federation); Ishchenko, Arkady V. [Boreskov Institute of Catalysis, Lavrentieva ave. 5, Novosibirsk, 630090 (Russian Federation); Romanenko, Anatoly I.; Tkachev, Evgeniy N.; Anikeeva, Olga B. [Nikolaev Institute of Inorganic Chemistry, Lavrentieva ave. 3, Novosibirsk, 630090 (Russian Federation); Novosibirsk State University, Pirogova st. 2, Novosibirsk, 630090 (Russian Federation)

    2012-06-15

    Multiwall carbon nanotubes (MWNT) with three medium diameters (20-22, 9-13, and 6-8 nm) and different morphology were chemically oxidized using concentrated nitric acid, mixture of nitric and sulfuric acids ('melange' solution) and mixture of sulfuric acid and hydrogen peroxide ('piranha' solution). Influence of MWNT type and structure as well as type of oxidizer on the surface composition and structure of nanotubes after oxidation was investigated. Acid-base titration, X-ray photoelectron spectroscopy and thermal gravimetric analysis were used for quantitative and qualitative investigation of surface group composition of initial and oxidized nanotubes. Amount of oxygen-containing groups on the surface of oxidized MWNT depends on the type of initial MWNT. It was found that ratio of different oxygen containing groups is less dependent on the type of oxidizer. Electrophysical properties of initial and oxidized nanotubes were investigated in temperature range 4-293 K and main types of electrical conductivity were determined. It was shown that oxidation results in decrease in electrical conductivity of all samples with simultaneous change in the conductivity mechanism. Dispersive behavior of initial and oxidized nanotubes in different commonly used solvents was investigated. It was shown that oxidation leads to the improvement of sedimentation stability of MWNT in polar solvents.

  14. Oxidation behavior of multiwall carbon nanotubes with different diameters and morphology

    Science.gov (United States)

    Mazov, Ilya; Kuznetsov, Vladimir L.; Simonova, Irina A.; Stadnichenko, Andrey I.; Ishchenko, Arkady V.; Romanenko, Anatoly I.; Tkachev, Evgeniy N.; Anikeeva, Olga B.

    2012-06-01

    Multiwall carbon nanotubes (MWNT) with three medium diameters (20-22, 9-13, and 6-8 nm) and different morphology were chemically oxidized using concentrated nitric acid, mixture of nitric and sulfuric acids ("mélange" solution) and mixture of sulfuric acid and hydrogen peroxide ("piranha" solution). Influence of MWNT type and structure as well as type of oxidizer on the surface composition and structure of nanotubes after oxidation was investigated. Acid-base titration, X-ray photoelectron spectroscopy and thermal gravimetric analysis were used for quantitative and qualitative investigation of surface group composition of initial and oxidized nanotubes. Amount of oxygen-containing groups on the surface of oxidized MWNT depends on the type of initial MWNT. It was found that ratio of different oxygen containing groups is less dependent on the type of oxidizer. Electrophysical properties of initial and oxidized nanotubes were investigated in temperature range 4-293 K and main types of electrical conductivity were determined. It was shown that oxidation results in decrease in electrical conductivity of all samples with simultaneous change in the conductivity mechanism. Dispersive behavior of initial and oxidized nanotubes in different commonly used solvents was investigated. It was shown that oxidation leads to the improvement of sedimentation stability of MWNT in polar solvents.

  15. Accelerated thermal and radiation-oxidation combined degradation of electric cable insulation materials

    International Nuclear Information System (INIS)

    Yagi, Toshiaki; Seguchi, Tadao; Yoshida, Kenzo

    1986-03-01

    For the development of accelerated testing methodology to estimate the life time of electric cable, which is installed in radiation field such as a nuclear reactor containment vessel, radiation and thermal combined degradation of cable insulation and jacketing materials was studied. The materials were two types of formulated polyethylene, ethylene-propylene rubber, Hypalon, and Neoprene. With Co-60 γ-rays the materials were irradiated up to 0.5 MGy under vacuum and in oxygen under pressure, then exposed to thermal aging at elevated temperature in oxygen. The degradation was investigated by the tensile test, gelfraction, and swelling measurements. The thermal degradation rate for each sample increases with increase of oxygen concentration, i.e. oxygen pressure, during the aging, and tends to saturate above 0.2 MPa of oxygen pressure. Then, the effects of irradiation and the temperature on the thermal degradation rate were investigated at the oxygen pressure of 0.2 MPa in the temperature range from 110 deg C to 150 deg C. For all of samples irradiated in oxygen, the following thermal degradation rate was accelerated by several times comparing with unirradiated samples, while the rate of thermal degradation for the sample except Neoprene irradiated under vacuum was nearly equal to that of unirradiated one. By the analysis of thermal degradation rate against temperature using Arrhenius equation, it was found that the activation energy tends to decrease for the samples irradiated in oxidation condition. (author)

  16. Nano-powder production by electrical explosion of wires

    International Nuclear Information System (INIS)

    Mao Zhiguo; Zou Xiaobing; Wang Xinxin; Jiang Weihua

    2010-01-01

    A device for nano-powder production by electrical explosion of wires was designed and built. Eight wires housed in the discharge chamber are exploded one by one before opening the chamber for the collection of the produced nano-powder. To increase the rate of energy deposition into a wire, the electrical behavior of the discharge circuit including the exploding wire was simulated. The results showed that both reducing the circuit inductance and reducing the capacitance of the energy-storage capacitor (keeping the storage energy constant) can increase the energy deposition rate. To better understand the physical processes of the nano-powder formation by the wire vapor, a Mach-Zehnder interferometer was used to record the time evolution of the wire vapor as well as the plasma. A thermal expansion lag of the dense vapor core as well as more than one times of the vapor burst was observed for the first time. Finally, nano-powders of titanium nitride, titanium dioxide, copper oxides and zinc oxide were produced by electrical explosion of wires. (authors)

  17. Computer simulation of the structure and properties of non-crystalline oxides

    International Nuclear Information System (INIS)

    Belashchenko, D.K.

    1997-01-01

    The structure data and some properties of non-crystalline (liquid and amorphous) oxide systems are discussed that were obtained using computer simulation methods. The simple oxide models, the homological serii of simple oxides, the models of binary and multi-components oxide systems are considered. Also the results of the simulation of ionic transfer in electric field are discussed. Ionic theory of oxides allows to predict the structure, thermodynamic and other properties for many oxide systems except the phosphate and vanadate oxides and some others

  18. New structural and electrical data on Bi-Mo mixed oxides with a structure based on [Bi12O14]∞ columns

    International Nuclear Information System (INIS)

    Vannier, R.N.; Abraham, F.; Nowogrocki, G.; Mairesse, G.

    1999-01-01

    The authors recently described a new family of oxide anion conductors with a structure based on [Bi 12 O 14 ] ∞ columns (Journal of Solid State Chemistry 122, 394 (1996)). The parent compound of this series can be formulated as Bi 26 Mo 10 O 69 and formation of a solid solution, in the Bi 2 O 3 -MoO 3 binary system, in the range 2.57 ≤ Bi/Mo ≤ 2.77 was established. The stoichiometry of this series was questioned by R. Enjalbert et al. (Journal of Solid State Chemistry 131, 236 (1997)), but confirmed by D.J. Buttrey et al. (Materials Research Bulletin 32, 947 (1997)). The first part of this paper is devoted to a refutation of criticisms by R. Enjalbert et al. In the second part, a comparison with other Bi 2 O 3 -based oxide anion conductors enables the authors to propose an iono-covalent description of this novel structure type, taking into account all the structural and electrical features, especially new neutron powder diffraction refinement and conductivity measurements under variable oxygen partial pressures

  19. Electron transport investigation of layered MoO3 oxides doped with different concentrations of Nb2O5 oxide

    International Nuclear Information System (INIS)

    Al-Khawaja, S.; Kasem, M.

    2008-07-01

    The dc and ac electric conductivity has been studied for numerous samples of molybdenum oxide MoO 3 doped with niobium oxide Nb 2 O 5 elaborated via the solid state reactions. By means of the electric resistivity and dielectricity curves obtained as a function of temperature, and according to the dopant concentration, the behaviour of these compounds has been allocated. Most of the investigated samples, which are insulating at room temperature, have been witnessed to exhibit simultaneously two different electric comportments; metallic and semiconducting within the range of low and high temperatures respectively, designated by a critical temperature related to the nature of the material. Both of these behaviours are attributed electronically to ionic conduction mechanism, occurring in the solid material formed upon doping with Nb 2 O 5 , which is utterly diffused into the layered structure of MoO 3 particularly for x≥40% concentrations and accompanied by relaxation in the dielectric function between 5 Hz and 13 M Hz.(Authors)

  20. Crystalline-like temperature dependence of the electrical characteristics in amorphous Indium-Gallium-Zinc-Oxide thin film transistors

    Science.gov (United States)

    Estrada, M.; Hernandez-Barrios, Y.; Cerdeira, A.; Ávila-Herrera, F.; Tinoco, J.; Moldovan, O.; Lime, F.; Iñiguez, B.

    2017-09-01

    A crystalline-like temperature dependence of the electrical characteristics of amorphous Indium-Gallium-Zinc-Oxide (a-IGZO) thin film transistors (TFTs) is reported, in which the drain current reduces as the temperature is increased. This behavior appears for values of drain and gate voltages above which a change in the predominant conduction mechanism occurs. After studying the possible conduction mechanisms, it was determined that, for gate and drain voltages below these values, hopping is the predominant mechanism with the current increasing with temperature, while for values above, the predominant conduction mechanism becomes percolation in the conduction band or band conduction and IDS reduces as the temperature increases. It was determined that this behavior appears, when the effect of trapping is reduced, either by varying the density of states, their characteristic energy or both. Simulations were used to further confirm the causes of the observed behavior.

  1. Electrical and magneto transport properties of

    Indian Academy of Sciences (India)

    samples. The morphology of crystal grains shows that the grains are nearly uniform in size and spherical. Electrical .... 1.5406 Å) in angular steps of 0.02 .... table to scattering by impurities, defects, grain boundaries .... because of different orientations of opposite spins, an energy ... 2000 Colossal magneto resistance oxides.

  2. Pulsed laser deposition of transparent conductive oxide thin films on flexible substrates

    Science.gov (United States)

    Socol, G.; Socol, M.; Stefan, N.; Axente, E.; Popescu-Pelin, G.; Craciun, D.; Duta, L.; Mihailescu, C. N.; Mihailescu, I. N.; Stanculescu, A.; Visan, D.; Sava, V.; Galca, A. C.; Luculescu, C. R.; Craciun, V.

    2012-11-01

    The influence of target-substrate distance during pulsed laser deposition of indium zinc oxide (IZO), indium tin oxide (ITO) and aluminium-doped zinc oxide (AZO) thin films grown on polyethylene terephthalate (PET) substrates was investigated. It was found that the properties of such flexible transparent conductive oxide (TCO)/PET electrodes critically depend on this parameter. The TCO films that were deposited at distances of 6 and 8 cm exhibited an optical transmittance higher than 90% in the visible range and electrical resistivities around 5 × 10-4 Ω cm. In addition to these excellent electrical and optical characteristics the films grown at 8 cm distance were homogenous, smooth, adherent, and without cracks or any other extended defects, being suitable for opto-electronic device applications.

  3. Composite structure of ZnO films coated with reduced graphene oxide: structural, electrical and electrochemical properties

    Science.gov (United States)

    Shuai, Weiqiang; Hu, Yuehui; Chen, Yichuan; Hu, Keyan; Zhang, Xiaohua; Zhu, Wenjun; Tong, Fan; Lao, Zixuan

    2018-02-01

    ZnO films coated with reduced graphene oxide (RGO-ZnO) were prepared by a simple chemical approach. The graphene oxide (GO) films transferred onto ZnO films by spin coating were reduced to RGO films by two steps (exposed to hydrazine vapor for 12 h and annealed at 600 °C). The crystal structures, electrical and photoluminescence properties of RGO-ZnO films on quartz substrates were systematically studied. The SEM images illustrated that RGO layers have successfully been coated on the ZnO films very tightly. The PL properties of RGO-ZnO were studied. PL spectra show two sharp peaks at 390 nm and a broad visible emission around 490 nm. The resistivity of RGO-ZnO films was measured by a Hall measurement system, RGO as nanofiller considerably decrease the resistivity of ZnO films. An electrode was fabricated, using RGO-ZnO films deposited on Si substrate as active materials, for super capacitor application. By comparison of different results, we conclude that the RGO-ZnO composite material couples possess the properties of super capacitor. Project supported by the National Natural Science Foundation of China (Nos. 61464005, 51562015), the Natural Science Foundation of Jiangxi Province (Nos. 20143ACB21004, 20151BAB212008, 20171BAB216015), the Jiangxi Province Foreign Cooperation Projects, China (No. 20151BDH80031), the Leader Training Object Project of Major Disciplines Academic and Technical of Jiangxi Province (No. 20123BCB22002), and the Key Technology R & D Program of the Jiangxi Provine of Science and Technology (No. 20171BBE50053).

  4. Electrical circuit model of ITO/AZO/Ge photodetector.

    Science.gov (United States)

    Patel, Malkeshkumar; Kim, Joondong

    2017-10-01

    In this data article, ITO/AZO/Ge photodetector was investigated for electrical circuit model. Due to the double (ITO and AZO) transparent metal-oxide films (DOI:10.1016/j.mssp.2016.03.007) (Yun et al., 2016) [1], the Ge heterojunction device has a better interface quality due to the AZO layer with a low electrical resistance due to the ITO layer (Yun et al., 2015) [2]. The electrical and interfacial benefitted ITO/AZO/Ge heterojunction shows the quality Schottky junction. In order to investigate the device, the ITO/AZO/Ge heterojunction was analyzed by R-C circuit model using the impedance spectroscopy.

  5. Studies on nitric oxide removal in simulated gas compositions under plasma-dielectric/catalytic discharges

    International Nuclear Information System (INIS)

    Rajanikanth, B.S.; Rout, Satyabrata

    2001-01-01

    Application of pulsed electrical discharges for gas cleaning is gaining prominence, mainly from the energy consideration point of view. This present paper presents recent work on applying the electrical discharge plasma technology for treating gaseous pollutants, in general, and nitric oxide, in particular, as this is one of the major contributors to air pollution. The present work focuses attention on pulsed electrical discharge technique for nitric oxide removal from simulated gas compositions and study of effect of packed dielectric pellets, with and without a coating of catalyst, on the removal process. Experiments were conducted in a cylindrical corona reactor energized by repetitive high voltage pulses. The effects of various parameters, viz. pulse voltage magnitude, pulse frequency, initial nitric oxide concentration and gas mixture composition on nitric oxide removal efficiency, are discussed. When the reactors were filled with different dielectric pellets like, barium titanate, alumina, and alumina coated with palladium catalyst, the improvement in nitric oxide removal efficiency is studied and discussed. The power dissipated in the reactor and the energy consumed per nitric oxide molecule removed was calculated. Further results and comparative study of various cases are presented in the paper

  6. Electricity generation by anaerobic bacteria and anoxic sediments from hypersaline soda lakes

    Science.gov (United States)

    Miller, L.G.; Oremland, R.S.

    2008-01-01

    Anaerobic bacteria and anoxic sediments from soda lakes produced electricity in microbial fuel cells (MFCs). No electricity was generated in the absence of bacterial metabolism. Arsenate respiring bacteria isolated from moderately hypersaline Mono Lake (Bacillus selenitireducens), and salt-saturated Searles Lake, CA (strain SLAS-1) oxidized lactate using arsenate as the electron acceptor. However, these cultures grew equally well without added arsenate using the MFC anode as their electron acceptor, and in the process oxidized lactate more efficiently. The decrease in electricity generation by consumption of added alternative electron acceptors (i.e. arsenate) which competed with the anode for available electrons proved to be a useful indicator of microbial activity and hence life in the fuel cells. Shaken sediment slurries from these two lakes also generated electricity, with or without added lactate. Hydrogen added to sediment slurries was consumed but did not stimulate electricity production. Finally, electricity was generated in statically incubated "intact" sediment cores from these lakes. More power was produced in sediment from Mono Lake than from Searles Lake, however microbial fuel cells could detect low levels of metabolism operating under moderate and extreme conditions of salt stress. ?? 2008 US Government.

  7. Microwave-assisted synthesis of metal oxide/hydroxide composite electrodes for high power supercapacitors - A review

    Science.gov (United States)

    Faraji, Soheila; Ani, Farid Nasir

    2014-10-01

    Electrochemical capacitors (ECs), also known as pseudocapacitors or supercapacitors (SCs), is receiving great attention for its potential applications in electric and hybrid electric vehicles because of their ability to store energy, alongside with the advantage of delivering the stored energy much more rapidly than batteries, namely power density. To become primary devices for power supply, supercapacitors must be developed further to improve their ability to deliver high energy and power simultaneously. In this concern, a lot of effort is devoted to the investigation of pseudocapacitive transition-metal-based oxides/hydroxides such as ruthenium oxide, manganese oxide, cobalt oxide, nickel oxide, cobalt hydroxide, nickel hydroxide, and mixed metal oxides/hydroxides such as nickel cobaltite and nickel-cobalt oxy-hydroxides. This is mainly due to the fact that they can produce much higher specific capacitances than typical carbon-based electric double-layer capacitors and electronically conducting polymers. This review presents supercapacitor performance data of metal oxide thin film electrodes by microwave-assisted as an inexpensive, quick and versatile technique. Supercapacitors have established the specific capacitance (Cs) principles, therefore, it is likely that metal oxide films will continue to play a major role in supercapacitor technology and are expected to considerably increase the capabilities of these devices in near future.

  8. Multilayered metal oxide thin film gas sensors obtained by conventional and RF plasma-assisted laser ablation

    International Nuclear Information System (INIS)

    Mitu, B.; Marotta, V.; Orlando, S.

    2006-01-01

    Multilayered thin films of In 2 O 3 and SnO 2 have been deposited by conventional and RF plasma-assisted reactive pulsed laser ablation, with the aim to evaluate their behaviour as toxic gas sensors. The depositions have been carried out by a frequency doubled Nd-YAG laser (λ = 532 nm, τ = 7 ns) on Si(1 0 0) substrates, in O 2 atmosphere. The thin films have been characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM) and electrical resistance measurements. A comparison of the electrical response of the simple (indium oxide, tin oxide) and multilayered oxides to toxic gas (nitric oxide, NO) has been performed. The influence on the structural and electrical properties of the deposition parameters, such as substrate temperature and RF power is reported

  9. Electrical bistabilities and memory mechanisms of nonvolatile organic bistable devices based on exfoliated muscovite-type mica nanoparticle/poly(methylmethacrylate) nanocomposites

    Science.gov (United States)

    Lim, Won Gyu; Lee, Dea Uk; Na, Han Gil; Kim, Hyoun Woo; Kim, Tae Whan

    2018-02-01

    Organic bistable devices (OBDs) with exfoliated mica nanoparticles (NPs) embedded into an insulating poly(methylmethacrylate) (PMMA) layer were fabricated by using a spin-coating method. Current-voltage (I-V) curves for the Al/PMMA/exfoliated mica NP/PMMA/indium-tin-oxide/glass devices at 300 K showed a clockwise current hysteresis behavior due to the existence of the exfoliated muscovite-type mica NPs, which is an essential feature for bistable devices. Write-read-erase-read data showed that the OBDs had rewritable nonvolatile memories and an endurance number of ON/OFF switching for the OBDs of 102 cycles. An ON/OFF ratio of 1 × 103 was maintained for retention times larger than 1 × 104 s. The memory mechanisms of the fabricated OBDs were described by using the trapping and the tunneling processes within a PMMA active layer containing exfoliated muscovite-type mica NPs on the basis of the energy band diagram and the I-V curves.

  10. Effect of zinc oxide and boron oxide addition on the properties of yttrium-doped barium zirconate

    International Nuclear Information System (INIS)

    Andrade, Tiago Felipe

    2011-01-01

    BaZr 0.8 Y 0.2 O 3- δ protonic conductors, prepared by the ceramic route, were pressed and sintered with ZnO and B 2 O 3 sinter ing aids. The sintered pellets were analyzed by X-ray diffraction and impedance spectroscopy. Polished and thermally etched surfaces of the pellets were observed in a scanning probe microscope. The highest values of apparent density, 95%T.D., were obtained with 2 and 5 wt.% ZnO. The lowest value of electrical resistivity was obtained in BaZr 0.8 Y 0.2 O 3- δ compounds with 5 wt.% ZnO. Boron oxide and zinc oxide sinter ing aids were efficient to improve the apparent density as well as the electrical conductivity of BaZr 0.8 Y 0.2 O 3- δ protonic conductors. (author)

  11. The influence of reduced graphene oxide on electrical conductivity of LiFePO4-based composite as cathode material

    International Nuclear Information System (INIS)

    Arifin, Muhammad; Aimon, Akfiny Hasdi; Winata, Toto; Abdullah, Mikrajuddin; Iskandar, Ferry

    2016-01-01

    LiFePO 4 is fascinating cathode active materials for Li-ion batteries application because of their high electrochemical performance such as a stable voltage at 3.45 V and high specific capacity at 170 mAh.g −1 . However, their low intrinsic electronic conductivity and low ionic diffusion are still the hindrance for their further application on Li-ion batteries. Therefore, the efforts to improve their conductivity are very important to elevate their prospecting application as cathode materials. Herein, we reported preparation of additional of reduced Graphene Oxide (rGO) into LiFePO 4 -based composite via hydrothermal method and the influence of rGO on electrical conductivity of LiFePO 4 −based composite by varying mass of rGO in composition. Vibration of LiFePO 4 -based composite was detected on Fourier Transform Infrared Spectroscopy (FTIR) spectra, while single phase of LiFePO 4 nanocrystal was observed on X-Ray Diffraction (XRD) pattern, it furthermore, Scanning Electron Microscopy (SEM) images showed that rGO was distributed around LiFePO4-based composite. Finally, the 4-point probe measurement result confirmed that the optimum electrical conductivity is in additional 2 wt% rGO for range 1 to 2 wt% rGO

  12. Elevated exhaust temperature, zoned, electrically-heated particulate matter filter

    Science.gov (United States)

    Gonze, Eugene V [Pinckney, MI; Bhatia, Garima [Bangalore, IN

    2012-04-17

    A system includes an electrical heater and a particulate matter (PM) filter that is arranged one of adjacent to and in contact with the electrical heater. A control module selectively increases an exhaust gas temperature of an engine to a first temperature and that initiates regeneration of the PM filter using the electrical heater while the exhaust gas temperature is above the first temperature. The first temperature is greater than a maximum exhaust gas temperature at the PM filter during non-regeneration operation and is less than an oxidation temperature of the PM.

  13. Dietary oxidized poultry offal fat: broiler performance and oxidative stability of thigh meat during chilled storage

    Directory of Open Access Journals (Sweden)

    AMC Racanicci

    2008-03-01

    Full Text Available Two experiments were conducted to evaluate the effects of dietary oxidized poultry offal fat on the performance of broilers and on the oxidative stability of dark chicken meat. One hundred and sixty male chicks were fed a corn-soybean meal diet containing 4% fresh or oxidized poultry fat from 10 to 47 days of age. Fresh fat was stored frozen until diets were produced, and oxidized fat was obtained by electrical heating (110 to 120 ºC. Birds were slaughtered at 47 days of age, and carcass characteristics were measured. Skinless and deboned thigh meat was stored chilled during 12 days, and samples were periodically collected to assess their quality and oxidative stability. Dietary oxidized fat did not affect bird performance or carcass characteristics. During chilled storage, meat color (L*, a* and b* was not affected by dietary treatments; however, TBARS (Thiobarbituric Acid Reactive Substances values were higher (P<0.05 in thigh meat from chickens fed the oxidized fat, indicating that oxidative stability was adversely affected.

  14. ZnO Coatings with Controlled Pore Size, Crystallinity and Electrical Conductivity

    Directory of Open Access Journals (Sweden)

    Roman SCHMACK

    2016-05-01

    Full Text Available Zinc oxide is a wide bandgap semiconductor with unique optical, electrical and catalytic properties. Many of its practical applications rely on the materials pore structure, crystallinity and electrical conductivity. We report a synthesis method for ZnO films with ordered mesopore structure and tuneable crystallinity and electrical conductivity. The synthesis relies on dip-coating of solutions containing micelles of an amphiphilic block copolymer and complexes of Zn2+ ions with aliphatic ligands. A subsequent calcination at 400°C removes the template and induces crystallization of the pore walls. The pore structure is controlled by the template polymer, whereas the aliphatic ligands control the crystallinity of the pore walls. Complexes with a higher thermal stability result in ZnO films with a higher content of residual carbon, smaller ZnO crystals and therefore lower electrical conductivity. The paper discusses the ability of different types of ligands to assist in the synthesis of mesoporous ZnO and relates the structure and thermal stability of the precursor complexes to the crystallinity and electrical conductivity of the zinc oxide.DOI: http://dx.doi.org/10.5755/j01.ms.22.1.8634

  15. A comparative study of quantum yield and electrical energy per order (E(Eo)) for advanced oxidative decolourisation of reactive azo dyes by UV light.

    Science.gov (United States)

    Muruganandham, M; Selvam, K; Swaminathan, M

    2007-06-01

    This paper evaluates the quantum yield and electrical energy per order (E(Eo)) efficiency of Reactive Orange 4 (RO4) and Reactive Yellow 14 (RY14) azo dyes by three advanced oxidation processes (AOPs). Both dyes were completely decolourised by all these processes. The relative decolourisation efficiencies of these processes were in the following order: Fe(2+)/H(2)O(2)/UV>UV/TiO(2)>UV/H(2)O(2). The low efficiency of UV/H(2)O(2) process is mainly due to low UV absorption by hydrogen peroxide at the 365nm. The figure of merit E(Eo) values showed that UV/H(2)O(2) process consumes more electrical energy than the other two processes. The electrical energy consumption is in the following order: UV/H(2)O(2)>UV/TiO(2)>Fe(2+)/H(2)O(2)/UV. At low initial dye concentration higher quantum yield was observed in UV/TiO(2) process, whereas in photo-Fenton process higher quantum yield was observed at high initial dye concentration. The structure of dye molecule also influences the quantum yield and E(Eo) value.

  16. A comparative study of quantum yield and electrical energy per order (E Eo) for advanced oxidative decolourisation of reactive azo dyes by UV light

    International Nuclear Information System (INIS)

    Muruganandham, M.; Selvam, K.; Swaminathan, M.

    2007-01-01

    This paper evaluates the quantum yield and electrical energy per order (E Eo ) efficiency of Reactive Orange 4 (RO4) and Reactive Yellow 14 (RY14) azo dyes by three advanced oxidation processes (AOPs). Both dyes were completely decolourised by all these processes. The relative decolourisation efficiencies of these processes were in the following order: Fe 2+ /H 2 O 2 /UV > UV/TiO 2 > UV/H 2 O 2 . The low efficiency of UV/H 2 O 2 process is mainly due to low UV absorption by hydrogen peroxide at the 365 nm. The figure of merit E Eo values showed that UV/H 2 O 2 process consumes more electrical energy than the other two processes. The electrical energy consumption is in the following order: UV/H 2 O 2 > UV/TiO 2 > Fe 2+ /H 2 O 2 /UV. At low initial dye concentration higher quantum yield was observed in UV/TiO 2 process, whereas in photo-Fenton process higher quantum yield was observed at high initial dye concentration. The structure of dye molecule also influences the quantum yield and E Eo value

  17. Effect of rose water on structural, optical and electrical properties of composites of reduced graphene oxide-poly (vinyl alcohol) (PVA) grafted with silver nanoparticles

    Science.gov (United States)

    Kumar, Devender; Wadhwa, Heena; Mahendia, Suman; Chand, Fakir; Kumar, Shyam

    2017-02-01

    In this work, nanocomposites of reduced graphene oxide-poly (vinyl alcohol) (PVA) grafted with silver nanoparticles (rGO-PVA-Ag) were prepared in the absence and presence of rose water. The optical characterizations of prepared nanocomposites were done through UV-visible spectroscopy and Transmission Electron Microscopy (TEM) and Raman spectroscopy was employed for the surface characterization. The grafted silver (Ag) nanoparticles are found to be almost spherical in shape with reduction in their mean diameter from 47 nm to 26 nm after addition of rose water. The UV-visible absorption spectra of as-prepared rGO-PVA-Ag nanocomposites without and with rose water depicted surface plasmon resonance (SPR) peak at around 448 nm which coincides with the predicted spectra from simulation based on the Mie Theory. The electrical dc conductivity measurements as the function of temperature from room temperature to 55 °C were investigated. It has been found that use of rose water in synthesis process increases the electrical conductivity of the rGO-PVA-Ag. The mode of the electrical conduction in the composites can be explained using Efros-Shklovskii Variable Range Hopping mechanism (ES VRH).

  18. Effects of Y incorporation in TaON gate dielectric on electrical performance of GaAs metal-oxide-semiconductor capacitor

    Energy Technology Data Exchange (ETDEWEB)

    Liu, Li Ning; Choi, Hoi Wai; Lai, Pui To [Department of Electrical and Electronic Engineering, The University of Hong Kong (China); Xu, Jing Ping [School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan (China)

    2016-09-15

    In this study, GaAs metal-oxide-semiconductor (MOS) capacitors using Y-incorporated TaON as gate dielectric have been investigated. Experimental results show that the sample with a Y/(Y + Ta) atomic ratio of 27.6% exhibits the best device characteristics: high k value (22.9), low interfacestate density (9.0 x 10{sup 11} cm{sup -2} eV{sup -1}), small flatband voltage (1.05 V), small frequency dispersion and low gate leakage current (1.3 x 10{sup -5}A/cm{sup 2} at V{sub fb} + 1 V). These merits should be attributed to the complementary properties of Y{sub 2}O{sub 3} and Ta{sub 2}O{sub 5}:Y can effectively passivate the large amount of oxygen vacancies in Ta{sub 2}O{sub 5}, while the positively-charged oxygen vacancies in Ta{sub 2}O{sub 5} are capable of neutralizing the effects of the negative oxide charges in Y{sub 2}O{sub 3}. This work demonstrates that an appropriate doping of Y content in TaON gate dielectric can effectively improve the electrical performance for GaAs MOS devices. (copyright 2016 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  19. Dependence of electrical and optical properties of sol-gel prepared undoped cadmium oxide thin films on annealing temperature

    International Nuclear Information System (INIS)

    Santos-Cruz, J.; Torres-Delgado, G.; Castanedo-Perez, R.; Jimenez-Sandoval, S.; Jimenez-Sandoval, O.; Zuniga-Romero, C.I.; Marquez Marin, J.; Zelaya-Angel, O.

    2005-01-01

    The effect of the annealing temperature (T a ) on the optical, electrical and structural properties of the undoped cadmium oxide (CdO) thin films obtained by the sol-gel method, using a simple precursor solution, was studied. All the CdO films annealed in the range from 200 to 450 deg. C are polycrystalline with (111) preferential orientation and present high optical transmission > 85% for wavelengths above 500 nm. The resistivity decreases as T a increases until it reaches a value of 6 x 10 -4 Ω cm for T a 350 deg. C. For higher temperatures the resistivity experiences a slight increase. Images obtained by atomic force microscopy show an evident incremental change of the aggregate size (clusters of grains) as T a increases. The grain size also increases when T a increases as observed in data calculated from X-ray measurements

  20. Environmental challenges and opportunities of the evolving North American electricity market : Estimating future air pollution from new electric power generation

    International Nuclear Information System (INIS)

    Miller, P.; Patterson, Z.; Vaughan, S.

    2002-06-01

    A significant source of air pollutants and greenhouse gases in North America is a direct result of the generation of electricity from the combustion of fossil fuels. An attempt at estimating the future emissions of four key pollutants from the electricity generation sector in North America was made by the authors in this paper. They based their estimates on projections of future electricity generation capacity changes. They looked at new power plant projects in North America, as well as the expected changes in emissions as a result of these projects compared to the historical data originating from power plant emissions in the recent past. Both the local context and the national level were examined. Nitrogen oxides, sulfur dioxide, mercury, and carbon dioxide, all arising from the combustion of fossil fuels, were considered in this paper. Ground level ozone, or smog results from nitrogen oxides. Acidic deposition, also called acid rain, is caused in part by both nitrogen oxides and sulfur dioxide, as is fine particles in the atmosphere linked to lung damage and premature death. Fish consumption advisories were issued due to the levels of toxic mercury deposited in lakes and streams. Global climate change is caused in part to the greenhouse gas carbon dioxide. Air quality and climate change will both be impacted by the future evolution of the electricity generation sector in an integrated North American energy market. The authors attempted to provide a baseline of air emissions from that sector in North America for a common reference year, enabling the tracking of changes in emissions patterns in the future. A reference case inventory for the four pollutants was estimated, followed by the development of two boundary cases estimating future emissions in 2007. refs., 22 tabs

  1. Vastly enhancing the chemical stability of phosphorene by employing an electric field.

    Science.gov (United States)

    Gao, Junfeng; Zhang, Gang; Zhang, Yong-Wei

    2017-03-23

    Currently, a major hurdle preventing phosphorene from various electronic applications is its rapid oxidation under ambient conditions. Thus how to enhance its chemical stability by suppressing oxidation becomes an urgent task. Here, we reveal a highly effective procedure to suppress the oxidation of phosphorene by employing a suitable van der Waals (vdW) substrate and a vertical electric field. Our first-principles study shows that the phosphorene-MoSe 2 vdW heterostructure is able to reverse the stability of physisorption and chemisorption of molecular O 2 on phosphorene. With further application of a vertical electric field of -0.6 V Å -1 , the energy barrier for oxidation is able to further increase to 0.91 eV, leading to a 10 5 times enhancement in its lifetime compared with that without using the procedure at room temperature. Our work presents a viable strategy to vastly enhance the chemical stability of phosphorene in air.

  2. Stable solar-driven oxidation of water by semiconducting photoanodes protected by transparent catalytic nickel oxide films.

    Science.gov (United States)

    Sun, Ke; Saadi, Fadl H; Lichterman, Michael F; Hale, William G; Wang, Hsin-Ping; Zhou, Xinghao; Plymale, Noah T; Omelchenko, Stefan T; He, Jr-Hau; Papadantonakis, Kimberly M; Brunschwig, Bruce S; Lewis, Nathan S

    2015-03-24

    Reactively sputtered nickel oxide (NiOx) films provide transparent, antireflective, electrically conductive, chemically stable coatings that also are highly active electrocatalysts for the oxidation of water to O2(g). These NiOx coatings provide protective layers on a variety of technologically important semiconducting photoanodes, including textured crystalline Si passivated by amorphous silicon, crystalline n-type cadmium telluride, and hydrogenated amorphous silicon. Under anodic operation in 1.0 M aqueous potassium hydroxide (pH 14) in the presence of simulated sunlight, the NiOx films stabilized all of these self-passivating, high-efficiency semiconducting photoelectrodes for >100 h of sustained, quantitative solar-driven oxidation of water to O2(g).

  3. Influences of different oxidants on the characteristics of HfAlOx films deposited by atomic layer deposition

    International Nuclear Information System (INIS)

    Fan Ji-Bin; Liu Hong-Xia; Ma Fei; Zhuo Qing-Qing; Hao Yue

    2013-01-01

    A comparative study of two kinds of oxidants (H 2 O and O 3 ) with the combinations of two metal precursors [trimethylaluminum (TMA) and tetrakis(ethylmethylamino) hafnium (TEMAH)] for atomic layer deposition (ALD) hafnium aluminum oxide (HfAlO x ) films is carried out. The effects of different oxidants on the physical properties and electrical characteristics of HfAlO x films are studied. The preliminary testing results indicate that the impurity level of HfAlO x films grown with both H 2 O and O 3 used as oxidants can be well controlled, which has significant effects on the dielectric constant, valence band, electrical properties, and stability of HfAlO x film. Additional thermal annealing effects on the properties of HfAlO x films grown with different oxidants are also investigated. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

  4. Electrically Conductive Anodized Aluminum Surfaces

    Science.gov (United States)

    Nguyen, Trung Hung

    2006-01-01

    Anodized aluminum components can be treated to make them sufficiently electrically conductive to suppress discharges of static electricity. The treatment was conceived as a means of preventing static electric discharges on exterior satin-anodized aluminum (SAA) surfaces of spacecraft without adversely affecting the thermal-control/optical properties of the SAA and without need to apply electrically conductive paints, which eventually peel off in the harsh environment of outer space. The treatment can also be used to impart electrical conductivity to anodized housings of computers, medical electronic instruments, telephoneexchange equipment, and other terrestrial electronic equipment vulnerable to electrostatic discharge. The electrical resistivity of a typical anodized aluminum surface layer lies between 10(exp 11) and 10(exp 13) Omega-cm. To suppress electrostatic discharge, it is necessary to reduce the electrical resistivity significantly - preferably to anodized surface becomes covered and the pores in the surface filled with a transparent, electrically conductive metal oxide nanocomposite. Filling the pores with the nanocomposite reduces the transverse electrical resistivity and, in the original intended outer-space application, the exterior covering portion of the nanocomposite would afford the requisite electrical contact with the outer-space plasma. The electrical resistivity of the nanocomposite can be tailored to a value between 10(exp 7) and 10(exp 12) Omega-cm. Unlike electrically conductive paint, the nanocomposite becomes an integral part of the anodized aluminum substrate, without need for adhesive bonding material and without risk of subsequent peeling. The electrodeposition process is compatible with commercial anodizing production lines. At present, the electronics industry uses expensive, exotic, electrostaticdischarge- suppressing finishes: examples include silver impregnated anodized, black electroless nickel, black chrome, and black copper. In

  5. Structural, electrical, and electrochemical characterization of Ni--Pr oxide thick films

    Energy Technology Data Exchange (ETDEWEB)

    Mari, C; Scolari, V; Fiori, G; Pizzini, S

    1977-03-01

    Oxides with metallic conductivity could and have been used instead of noble metals as insert electrodes in aqueous solutions as well as electrodes for high temperature fuel cells and electrolyzers and as catalysts for the conversion of exhaust gases from internal combustion engines. The aim of this paper is to report the results of a physico-chemical characterization (structure, morphology, electrochemical behavior) of Ni--Pr oxides which have been proposed as electrode materials for high temperature fuel cells. The electrochemical characterization was carried out in aqueous solutions at room temperature and with solid electrolytes at high temperature. Evidence has been found in the former case for an oxide electrode type of behavior. In the high temperature case, very low overvoltage values have been observed during cathodic oxygen reduction, while the electrode undergoes a reaction with oxygen during anodic oxygen evolution.

  6. Oxide Thin-Film Electronics using All-MXene Electrical Contacts

    KAUST Repository

    Wang, Zhenwei; Kim, Hyunho; Alshareef, Husam N.

    2018-01-01

    show balanced performance, including field-effect mobilities of 2.61 and 2.01 cm2 V−1 s−1 and switching ratios of 3.6 × 106 and 1.1 × 103, respectively. Further, complementary metal oxide semiconductor (CMOS) inverters are demonstrated. The CMOS

  7. Graphene-graphite oxide field-effect transistors.

    Science.gov (United States)

    Standley, Brian; Mendez, Anthony; Schmidgall, Emma; Bockrath, Marc

    2012-03-14

    Graphene's high mobility and two-dimensional nature make it an attractive material for field-effect transistors. Previous efforts in this area have used bulk gate dielectric materials such as SiO(2) or HfO(2). In contrast, we have studied the use of an ultrathin layered material, graphene's insulating analogue, graphite oxide. We have fabricated transistors comprising single or bilayer graphene channels, graphite oxide gate insulators, and metal top-gates. The graphite oxide layers show relatively minimal leakage at room temperature. The breakdown electric field of graphite oxide was found to be comparable to SiO(2), typically ~1-3 × 10(8) V/m, while its dielectric constant is slightly higher, κ ≈ 4.3. © 2012 American Chemical Society

  8. Preparation of porous carbon spheres from 2-keto-l-gulonic acid mother liquor by oxidation and activation for electric double-layer capacitor application.

    Science.gov (United States)

    Hao, Zhi-Qiang; Cao, Jing-Pei; Zhao, Xiao-Yan; Wu, Yan; Zhu, Jun-Sheng; Dang, Ya-Li; Zhuang, Qi-Qi; Wei, Xian-Yong

    2018-03-01

    A novel strategy is proposed for the increase of specific surface area (SSA) of porous carbon sphere (PCS) by oxidation and activation. 2-keto-l-gulonic acid mother liquor (GAML) as a high-pollution waste has a relatively high value of reutilization. For its high value-added utilization, GAML is used as the precursor for preparation of PCS as carbon-based electrode materials for electric double-layer capacitor. PCS is prepared by hydrothermal carbonization, carbonization and KOH activation, and Fe(NO 3 ) 3 9H 2 O is used as an oxidizing agent during carbonization. The as-prepared PCS has excellent porosity and high SSA of 2478 m 2  g -1 . Meanwhile, the pore structure of PCS can be controlled by the adjustment of carbonization parameters (carbonization temperature and the loading of Fe(NO 3 ) 3 9H 2 O). Besides, the SSA and specific capacitance of PCS can be increased remarkably when Fe(NO 3 ) 3 9H 2 O is added in carbonization. The specific capacitance of PCS can reach 303.7 F g -1 at 40 mA g -1 . PCSs as electrode material have superior electrochemical stability. After 8000 cycles, the capacitance retention is 98.3% at 2 A g -1 . The electric double-layer capacitance of PCS is improved when CS is carbonized with Fe(NO 3 ) 3 9H 2 O, and the economic and environmental benefits are achieved by the effective recycle of GAML. Copyright © 2017 Elsevier Inc. All rights reserved.

  9. Enhancements of the memory margin and the stability of an organic bistable device due to a graphene oxide:mica nanocomposite sandwiched between two polymer (9-vinylcarbazole) buffer layers

    Science.gov (United States)

    Kim, Woo Kyum; Wu, Chaoxing; Lee, Dea Uk; Kim, Hyoun Woo; Kim, Tae Whan

    2018-01-01

    Current-voltage (I-V) curves for the Al/polymer (9-vinylcarbazole) (PVK)/graphene oxide (GO):mica/PVK/indium-tin oxide (ITO) devices at 300 K showed a current bistability with a maximum high conductivity (ON)/low conductivity (OFF) ratio of 2 × 104, which was approximately 10 times larger than that of the device without a PVK layer. The endurance number of ON/OFF switchings for the Al/PVK/GO:mica/PVK/ITO device was 1 × 102 cycles, which was 20 times larger than that for the Al/GO:mica/ITO device. The ;erase; voltages were distributed between 2.3 and 3 V, and the ;write; voltages were distributed between -1.2 and -0.5 V. The retention time for the Al/PVK/GO:mica/PVK/ITO device was above 1 × 104 s, indicative of the memory stability of the device. The carrier transport mechanisms occurring in the Al/PVK/GO:mica/PVK/ITO and the Al/GO:mica/ITO devices are described on the basis of the I-V results and the energy band diagrams.

  10. Oxidative polycondensation of benzimidazole using NaOCl: Synthesis, characterization, optical, thermal and electrical properties of polybenzimidazoles

    Science.gov (United States)

    Anand, Siddeswaran; Muthusamy, Athianna; Dineshkumar, Sengottuvelu; Chandrasekaran, J.

    2017-11-01

    A series of polybenzimidazole polymers, poly-2-(1H-benzo[d] imidazole-2-yl) phenol (PBIP2), poly-3-(1H-benzo[d] imidazole-2-yl) phenol (PBIP3) and poly-4-(1H-benzo[d] imidazole-2-yl) phenol (PBIP4) were synthesized by oxidative polycondensation of benzimidazole monomers 2-(1H-benzo [d] imidazole-2-yl) phenol (BIP2), 3-(1H-benzo [d] imidazole-2-yl) phenol (BIP3) and 4-(1H-benzo [d] imidazole-2-yl) phenol (BIP4). The structure of benzimidazoles monomers and polybenzimidazoles (PBI) were confirmed by various spectroscopic techniques. The quantum theoretical calculations of band gap energy values of monomers were done with DFT and are compared with its optical band gap energy values. Fluorescence spectra of these compounds showed maximum emission in blue region. The electrical conductivity of PBIs was measured by four-point probe technique and showed good electrical response on iodine doping and conductivity increases with increase iodine doping time. The differences in conductivities among the three PBIs are in accordance with the charge density on imidazole nitrogens calculated by Huckel method. The high carbines residue (∼40%) at 500 °C in thermo gravimetric analysis shows that the PBIs are having reasonably good thermal stability. Polymers have recorded high dielectric constant at low applied frequency of 50 Hz at 393 K. The I-V characteristics of polybenzimidazoles p-n diodes showed rectifying nature with a typical forward to reverse current in the range -4 to 4 V. The high n values are caused by non homogeneities and effect of series resistance.

  11. Electrical circuit model of ITO/AZO/Ge photodetector

    Directory of Open Access Journals (Sweden)

    Malkeshkumar Patel

    2017-10-01

    Full Text Available In this data article, ITO/AZO/Ge photodetector was investigated for electrical circuit model. Due to the double (ITO and AZO transparent metal-oxide films (DOI:10.1016/j.mssp.2016.03.007 (Yun et al., 2016 [1], the Ge heterojunction device has a better interface quality due to the AZO layer with a low electrical resistance due to the ITO layer (Yun et al., 2015 [2]. The electrical and interfacial benefitted ITO/AZO/Ge heterojunction shows the quality Schottky junction. In order to investigate the device, the ITO/AZO/Ge heterojunction was analyzed by R–C circuit model using the impedance spectroscopy.

  12. MOSFET Electric-Charge Sensor

    Science.gov (United States)

    Robinson, Paul A., Jr.

    1988-01-01

    Charged-particle probe compact and consumes little power. Proposed modification enables metal oxide/semiconductor field-effect transistor (MOSFET) to act as detector of static electric charges or energetic charged particles. Thickened gate insulation acts as control structure. During measurements metal gate allowed to "float" to potential of charge accumulated in insulation. Stack of modified MOSFET'S constitutes detector of energetic charged particles. Each gate "floats" to potential induced by charged-particle beam penetrating its layer.

  13. Inspecting the microstructure of electrically active defects at the Ge/GeOx interface

    Science.gov (United States)

    Fanciulli, Marco; Baldovino, Silvia; Molle, Alessandro

    2012-02-01

    High mobility substrates are important key elements in the development of advanced devices targeting a vast range of functionalities. Among them, Ge showed promising properties promoting it as valid candidate to replace Si in CMOS technology. However, the electrical quality of the Ge/oxide interface is still a problematic issue, in particular for the observed inversion of the n-type Ge surface, attributed to the presence of dangling bonds inducing a severe band bending [1]. In this scenario, the identification of electrically active defects present at the Ge/oxide interface and the capability to passivate or anneal them becomes a mandatory issue aiming at an electrically optimized interface. We report on the application of highly sensitive electrically detected magnetic resonance (EDMR) techniques in the investigation of defects at the interface between Ge and GeO2 (or GeOx), including Ge dangling bonds and defects in the oxide [2]. In particular we will investigate how different surface orientations, e.g. the (001) against the (111) Ge surface, impacts the microstructure of the interface defects. [1] P. Tsipas and A. Dimoulas, Appl. Phys. Lett. 94, 012114 (2009) [2] S. Baldovino, A. Molle, and M. Fanciulli, Appl. Phys. Lett. 96, 222110 (2010)

  14. Properties of Copper Doped Neodymium Nickelate Oxide as Cathode Material for Solid Oxide Fuel Cells

    Directory of Open Access Journals (Sweden)

    Lee Kyoung-Jin

    2016-06-01

    Full Text Available Mixed ionic and electronic conducting K2NiF4-type oxide, Nd2Ni1-xCuxO4+δ (x=0~1 powders were synthesized by solid state reaction technique and solid oxide fuel cells consisting of a Nd2Ni1-xCuxO4+δ cathode, a Ni-YSZ anode and ScSZ as an electrolyte were fabricated. The effect of copper substitution for nickel on the electrical and electrochemical properties was examined. Small amount of copper doping (x=0.2 resulted in the increased electrical conductivity and decreased polarization resistance. It appears that this phenomenon was associated with the high mean valence of nickel and copper and the resulting excess oxygen (δ. It was found that power densities of the cell with the Nd2Ni1-xCuxO4+δ (x=0.1 and 0.2 cathode were higher than that of the cell with the Nd2NiO4+δ cathode.

  15. Applications of Oxide Coatings in Photovoltaic Devices

    Directory of Open Access Journals (Sweden)

    Sonya Calnan

    2014-03-01

    Full Text Available Metalloid and metal based oxides are an almost unavoidable component in the majority of solar cell technologies used at the time of writing this review. Numerous studies have shown increases of ≥1% absolute in solar cell efficiency by simply substituting a given layer in the material stack with an oxide. Depending on the stoichiometry and whether other elements are present, oxides can be used for the purpose of light management, passivation of electrical defects, photo-carrier generation, charge separation, and charge transport in a solar cell. In this review, the most commonly used oxides whose benefits for solar cells have been proven both in a laboratory and industrial environment are discussed. Additionally, developing trends in the use of oxides, as well as newer oxide materials, and deposition technologies for solar cells are reported.

  16. Magnéli oxides as promising n-type thermoelectrics

    Directory of Open Access Journals (Sweden)

    Gregor Kieslich

    2014-10-01

    Full Text Available The discovery of a large thermopower in cobalt oxides in 1997 lead to a surge of interest in oxides for thermoelectric application. Whereas conversion efficiencies of p-type oxides can compete with non-oxide materials, n-type oxides show significantly lower thermoelectric performances. In this context so-called Magnéli oxides have recently gained attention as promising n-type thermoelectrics. A combination of crystallographic shear and intrinsic disorder lead to relatively low thermal conductivities and metallic-like electrical conductivities in Magnéli oxides. Current peak-zT values of 0.3 around 1100 K for titanium and tungsten Magnéli oxides are encouraging for future research. Here, we put Magnéli oxides into context of n-type oxide thermoelectrics and give a perspective where future research can bring us.

  17. Transparent and Flexible Zinc Tin Oxide Thin Film Transistors and Inverters using Low-pressure Oxygen Annealing Process

    Science.gov (United States)

    Lee, Kimoon; Kim, Yong-Hoon; Kim, Jiwan; Oh, Min Suk

    2018-05-01

    We report on the transparent and flexible enhancement-load inverters which consist of zinc tin oxide (ZTO) thin film transistors (TFTs) fabricated at low process temperature. To control the electrical characteristics of oxide TFTs by oxygen vacancies, we applied low-pressure oxygen rapid thermal annealing (RTA) process to our devices. When we annealed the ZTO TFTs in oxygen ambient of 2 Torr, they showed better electrical characteristics than those of the devices annealed in the air ambient of 760 Torr. To realize oxide thin film transistor and simple inverter circuits on flexible substrate, we annealed the devices in O2 of 2 Torr at 150° C and could achieve the decent electrical properties. When we used transparent conductive oxide electrodes such as indium zinc oxide (IZO) and indium tin oxide (ITO), our transparent and flexible inverter showed the total transmittance of 68% in the visible range and the voltage gain of 5. And the transition voltage in voltage transfer curve was located well within the range of operation voltage.

  18. Ab-initio study of the relation between electric polarization and electric field gradients in ferroelectrics

    CERN Document Server

    Gonçalves, J N; Correia, J G; Butz, T; Picozzi, S; Fenta, A S; Amaral, V S

    2012-01-01

    The hyperfine interaction between the quadrupole moment of atomic nuclei and the electric field gradient (EFG) provides information on the electronic charge distribution close to a given atomic site. In ferroelectric materials, the loss of inversion symmetry of the electronic charge distribution is necessary for the appearance of the electric polarization. We present first-principles density functional theory calculations of ferroelectrics such as BaTiO$_{3}$, KNbO$_{3}$, PbTiO$_{3}$ and other oxides with perovskite structures, by focusing on both EFG tensors and polarization. We analyze the EFG tensor properties such as orientation and correlation between components and their relation with electric polarization. This work supports previous studies of ferroelectric materials where a relation between EFG tensors and polarization was observed, which may be exploited to study the ferroelectric order when standard techniques to measure polarization are not easily applied.

  19. Interconnection of bundled solid oxide fuel cells

    Science.gov (United States)

    Brown, Michael; Bessette, II, Norman F; Litka, Anthony F; Schmidt, Douglas S

    2014-01-14

    A system and method for electrically interconnecting a plurality of fuel cells to provide dense packing of the fuel cells. Each one of the plurality of fuel cells has a plurality of discrete electrical connection points along an outer surface. Electrical connections are made directly between the discrete electrical connection points of adjacent fuel cells so that the fuel cells can be packed more densely. Fuel cells have at least one outer electrode and at least one discrete interconnection to an inner electrode, wherein the outer electrode is one of a cathode and and anode and wherein the inner electrode is the other of the cathode and the anode. In tubular solid oxide fuel cells the discrete electrical connection points are spaced along the length of the fuel cell.

  20. Studying Some of Electrical and Mechanical Properties for Kevlar Fiber Reinforced Epoxy

    Science.gov (United States)

    Rafeeq, Sewench N.; Hussein, Samah M.

    2011-12-01

    As ordinary known the ability of synthesizing electrical conducting polymer composites is possible but with poor mechanical properties, for the solution of this problem, we carried out this study in order to obtain that both properties. Three methods were applied for preparing the conductive polyaniline (PANI) composites using Kevlar fiber fabric as substrate for the deposition of the PANI at one time and the prepared composite (EP/Kevlar fiber) at others. The chemical oxidative method was adopted for polymerization of the aniline and simultaneously protonated of PANI with a hydrochloric acid at concentration (1M). Two kinds of oxidation agents (FeCl3.6H2O) and ((NH4)2S2O8) were used. The electrical measurements indicate the effect of each preparation method, kind of oxidant agent and the kind of mat erial which PANI deposited on the electrical results. The conductivity results showed that the prepared composites lie within semiconductors region. Temperature—dependence of electric conductivity results showed semiconductors and conductors behavior of this material within the applied temperature ranges. The mechan ical property (tensile strength) was studied. X-ray diffraction study showed the crystalline structure for EP/Kevlar fiber/PANI composites prepared by the three methods. These results gave optimism to the synthesis of conductive polymer composites with excellent mechanical properties..